Science.gov

Sample records for advanced semiconductor materials

  1. Improved Thermoelectric Devices: Advanced Semiconductor Materials for Thermoelectric Devices

    SciTech Connect

    2009-12-11

    Broad Funding Opportunity Announcement Project: Phononic Devices is working to recapture waste heat and convert it into usable electric power. To do this, the company is using thermoelectric devices, which are made from advanced semiconductor materials that convert heat into electricity or actively remove heat for refrigeration and cooling purposes. Thermoelectric devices resemble computer chips, and they manage heat by manipulating the direction of electrons at the nanoscale. These devices aren’t new, but they are currently too inefficient and expensive for widespread use. Phononic Devices is using a high-performance, cost-effective thermoelectric design that will improve the device’s efficiency and enable electronics manufacturers to more easily integrate them into their products.

  2. Kansas Advanced Semiconductor Project

    SciTech Connect

    Baringer, P.; Bean, A.; Bolton, T.; Horton-Smith, G.; Maravin, Y.; Ratra, B.; Stanton, N.; von Toerne, E.; Wilson, G.

    2007-09-21

    KASP (Kansas Advanced Semiconductor Project) completed the new Layer 0 upgrade for D0, assumed key electronics projects for the US CMS project, finished important new physics measurements with the D0 experiment at Fermilab, made substantial contributions to detector studies for the proposed e+e- international linear collider (ILC), and advanced key initiatives in non-accelerator-based neutrino physics.

  3. Advances in graphene-based semiconductor photocatalysts for solar energy conversion: fundamentals and materials engineering.

    PubMed

    Xie, Xiuqiang; Kretschmer, Katja; Wang, Guoxiu

    2015-08-28

    Graphene-based semiconductor photocatalysis has been regarded as a promising technology for solar energy storage and conversion. In this review, we summarized recent developments of graphene-based photocatalysts, including preparation of graphene-based photocatalysts, typical key advances in the understanding of graphene functions for photocatalytic activity enhancement and methodologies to regulate the electron transfer efficiency in graphene-based composite photocatalysts, by which we hope to offer enriched information to harvest the utmost fascinating properties of graphene as a platform to construct efficient graphene-based composite photocatalysts for solar-to-energy conversion. PMID:26204442

  4. Advanced Semiconductor Devices

    NASA Astrophysics Data System (ADS)

    Shur, Michael S.; Maki, Paul A.; Kolodzey, James

    2007-06-01

    I. Wide band gap devices. Wide-Bandgap Semiconductor devices for automotive applications / M. Sugimoto ... [et al.]. A GaN on SiC HFET device technology for wireless infrastructure applications / B. Green ... [et al.]. Drift velocity limitation in GaN HEMT channels / A. Matulionis. Simulations of field-plated and recessed gate gallium nitride-based heterojunction field-effect transistors / V. O. Turin, M. S. Shur and D. B. Veksler. Low temperature electroluminescence of green and deep green GaInN/GaN light emitting diodes / Y. Li ... [et al.]. Spatial spectral analysis in high brightness GaInN/GaN light emitting diodes / T. Detchprohm ... [et al.]. Self-induced surface texturing of Al2O3 by means of inductively coupled plasma reactive ion etching in Cl2 chemistry / P. Batoni ... [et al.]. Field and termionic field transport in aluminium gallium arsenide heterojunction barriers / D. V. Morgan and A. Porch. Electrical characteristics and carrier lifetime measurements in high voltage 4H-SiC PiN diodes / P. A. Losee ... [et al.]. Geometry and short channel effects on enhancement-mode n-Channel GaN MOSFETs on p and n- GaN/sapphire substrates / W. Huang, T. Khan and T. P. Chow. 4H-SiC Vertical RESURF Schottky Rectifiers and MOSFETs / Y. Wang, P. A. Losee and T. P. Chow. Present status and future Directions of SiGe HBT technology / M. H. Khater ... [et al.]Optical properties of GaInN/GaN multi-quantum Wells structure and light emitting diode grown by metalorganic chemical vapor phase epitaxy / J. Senawiratne ... [et al.]. Electrical comparison of Ta/Ti/Al/Mo/Au and Ti/Al/Mo/Au Ohmic contacts on undoped GaN HEMTs structure with AlN interlayer / Y. Sun and L. F. Eastman. Above 2 A/mm drain current density of GaN HEMTs grown on sapphire / F. Medjdoub ... [et al.]. Focused thermal beam direct patterning on InGaN during molecular beam epitaxy / X. Chen, W. J. Schaff and L. F. Eastman -- II. Terahertz and millimeter wave devices. Temperature-dependent microwave performance of

  5. Semiconductor materials: From gemstone to semiconductor

    NASA Astrophysics Data System (ADS)

    Nebel, Christoph E.

    2003-07-01

    For diamond to be a viable semiconductor it must be possible to change its conductivity by adding impurities - known as dopants. With the discovery of a new dopant that generates electron conductivity at room temperature, diamond emerges as an electronic-grade material.

  6. Advanced 3-V semiconductor technology assessment

    NASA Technical Reports Server (NTRS)

    Nowogrodzki, M.

    1983-01-01

    Components required for extensions of currently planned space communications systems are discussed for large antennas, crosslink systems, single sideband systems, Aerostat systems, and digital signal processing. Systems using advanced modulation concepts and new concepts in communications satellites are included. The current status and trends in materials technology are examined with emphasis on bulk growth of semi-insulating GaAs and InP, epitaxial growth, and ion implantation. Microwave solid state discrete active devices, multigigabit rate GaAs digital integrated circuits, microwave integrated circuits, and the exploratory development of GaInAs devices, heterojunction devices, and quasi-ballistic devices is considered. Competing technologies such as RF power generation, filter structures, and microwave circuit fabrication are discussed. The fundamental limits of semiconductor devices and problems in implementation are explored.

  7. Recent advances in semiconductors for photocatalytic and photoelectrochemical water splitting.

    PubMed

    Hisatomi, Takashi; Kubota, Jun; Domen, Kazunari

    2014-11-21

    Photocatalytic and photoelectrochemical water splitting under irradiation by sunlight has received much attention for production of renewable hydrogen from water on a large scale. Many challenges still remain in improving energy conversion efficiency, such as utilizing longer-wavelength photons for hydrogen production, enhancing the reaction efficiency at any given wavelength, and increasing the lifetime of the semiconductor materials. This introductory review covers the fundamental aspects of photocatalytic and photoelectrochemical water splitting. Controlling the semiconducting properties of photocatalysts and photoelectrode materials is the primary concern in developing materials for solar water splitting, because they determine how much photoexcitation occurs in a semiconductor under solar illumination and how many photoexcited carriers reach the surface where water splitting takes place. Given a specific semiconductor material, surface modifications are important not only to activate the semiconductor for water splitting but also to facilitate charge separation and to upgrade the stability of the material under photoexcitation. In addition, reducing resistance loss and forming p-n junction have a significant impact on the efficiency of photoelectrochemical water splitting. Correct evaluation of the photocatalytic and photoelectrochemical activity for water splitting is becoming more important in enabling an accurate comparison of a number of studies based on different systems. In the latter part, recent advances in the water splitting reaction under visible light will be presented with a focus on non-oxide semiconductor materials to give an overview of the various problems and solutions. PMID:24413305

  8. Space Research Results Purify Semiconductor Materials

    NASA Technical Reports Server (NTRS)

    2010-01-01

    While President Obama's news that NASA would encourage private companies to develop vehicles to take NASA into space may have come as a surprise to some, NASA has always encouraged private companies to invest in space. More than two decades ago, NASA established Commercial Space Centers across the United States to encourage industry to use space as a place to conduct research and to apply NASA technology to Earth applications. Although the centers are no longer funded by NASA, the advances enabled by that previous funding are still impacting us all today. For example, the Space Vacuum Epitaxy Center (SVEC) at the University of Houston, one of the 17 Commercial Space Centers, had a mission to create advanced thin film semiconductor materials and devices through the use of vacuum growth technologies both on Earth and in space. Making thin film materials in a vacuum (low-pressure environment) is advantageous over making them in normal atmospheric pressures, because contamination floating in the air is lessened in a vacuum. To grow semiconductor crystals, researchers at SVEC utilized epitaxy the process of depositing a thin layer of material on top of another thin layer of material. On Earth, this process took place in a vacuum chamber in a clean room lab. For space, the researchers developed something called the Wake Shield Facility (WSF), a 12-foot-diameter disk-shaped platform designed to grow thin film materials using the low-pressure environment in the wake of the space shuttle. Behind an orbiting space shuttle, the vacuum levels are thousands of times better than in the best vacuum chambers on Earth. Throughout the 1990s, the WSF flew on three space shuttle missions as a series of proof-of-concept missions. These experiments are a lasting testament to the success of the shuttle program and resulted in the development of the first thin film materials made in the vacuum of space, helping to pave the way for better thin film development on Earth.

  9. Semiconductor device PN junction fabrication using optical processing of amorphous semiconductor material

    SciTech Connect

    Sopori, Bhushan; Rangappan, Anikara

    2014-11-25

    Systems and methods for semiconductor device PN junction fabrication are provided. In one embodiment, a method for fabricating an electrical device having a P-N junction comprises: depositing a layer of amorphous semiconductor material onto a crystalline semiconductor base, wherein the crystalline semiconductor base comprises a crystalline phase of a same semiconductor as the amorphous layer; and growing the layer of amorphous semiconductor material into a layer of crystalline semiconductor material that is epitaxially matched to the lattice structure of the crystalline semiconductor base by applying an optical energy that penetrates at least the amorphous semiconductor material.

  10. Semiconductor materials and microelectronic circuits

    NASA Astrophysics Data System (ADS)

    Kolesar, Edward S.

    Microminiaturization developments in IC systems have dramatically increased the reliability and performance of electronic components while reducing their physical size and power requirements; these advancements have pervasively affected weapons systems design efforts. Built-in self-test circuitry has greatly reduced maintenance problems and improved overall systems reliability. Increasing circuit complexity has also led to a major expansion of key military operational capabilities for reconnaissance, surveillance, and target acquisition. It is expected that Si-based ICs will continue to dominate high power solid-state switches in hypervelocity projectiles and beam weapons, while GaAs will remain the most commonly employed material in microwave and mm-wave devices for EW, radars, smart weapons, and communications.

  11. Exposure tool control for advanced semiconductor lithography

    NASA Astrophysics Data System (ADS)

    Matsuyama, Tomoyuki

    2015-08-01

    This is a review paper to show how we control exposure tool parameters in order to satisfy patterning performance and productivity requirements for advanced semiconductor lithography. In this paper, we will discuss how we control illumination source shape to satisfy required imaging performance, heat-induced lens aberration during exposure to minimize the aberration impact on imaging, dose and focus control to realize uniform patterning performance across the wafer and patterning position of circuit patterns on different layers. The contents are mainly about current Nikon immersion exposure tools.

  12. Controlling the stoichiometry and doping of semiconductor materials

    DOEpatents

    Albin, David; Burst, James; Metzger, Wyatt; Duenow, Joel; Farrell, Stuart; Colegrove, Eric

    2016-08-16

    Methods for treating a semiconductor material are provided. According to an aspect of the invention, the method includes annealing the semiconductor material in the presence of a compound that includes a first element and a second element. The first element provides an overpressure to achieve a desired stoichiometry of the semiconductor material, and the second element provides a dopant to the semiconductor material.

  13. Doped semiconductors and other solar energy materials

    NASA Astrophysics Data System (ADS)

    Williamson, D. L.

    1988-02-01

    A review is presented of recent applications of Mössbauer spectroscopy that focus on determining the fate of doped impurities in semiconductors, primarily GaAs, Ga1-xAlxAs and Si. Other solar energy materials and processes which are discussed include amorphous Si∶H-based alloys, chalcopyrites, transparent conducting oxides, photochemical processing via semiconductor powders in electrolytes, mirror making, and plant photosynthesis.

  14. 75 FR 44015 - Certain Semiconductor Products Made by Advanced Lithography Techniques and Products Containing...

    Federal Register 2010, 2011, 2012, 2013, 2014

    2010-07-27

    ... COMMISSION Certain Semiconductor Products Made by Advanced Lithography Techniques and Products Containing... importation of certain semiconductor products made by advanced lithography techniques and products containing... certain semiconductor products made by advanced lithography techniques or products containing same...

  15. ZnCdMgSe as a Materials Platform for Advanced Photonic Devices: Broadband Quantum Cascade Detectors and Green Semiconductor Disk Lasers

    NASA Astrophysics Data System (ADS)

    De Jesus, Joel

    The ZnCdMgSe family of II-VI materials has unique and promising characteristics that may be useful in practical applications. For example they can be grown lattice matched to InP substrates with lattice matched bandgaps that span from 2.1 to 3.5 eV, they can be successfully doped n-type, have a large conduction band offset (CBO) with no intervalley scattering present when strained, they have lower average phonon energies, and the InP lattice constant lies in the middle of the ZnSe and CdSe binaries compounds giving room to experiment with tensile and compressive stress. However they have not been studied in detail for use in practical devices. Here we have identified two types of devices that are being currently developed that benefit from the ZnCdMgSe-based material properties. These are the intersubband (ISB) quantum cascade (QC) detectors and optically pumped semiconductor lasers that emit in the visible range. The paucity for semiconductor lasers operating in the green-orange portion of the visible spectrum can be easily overcome with the ZnCdMgSe materials system developed in our research. The non-strain limited, large CBO available allows to expand the operating wavelength of ISB devices providing shorter and longer wavelengths than the currently commercially available devices. This property can also be exploited to develop broadband room temperature operation ISB detectors. The work presented here focused first on using the ZnCdMgSe-based material properties and parameter to understand and predict the interband and intersubband transitions of its heterostructures. We did this by studying an active region of a QC device by contactless electroreflectance, photoluminescence, FTIR transmittance and correlating the measurements to the quantum well structure by transfer matrix modeling. Then we worked on optimizing the ZnCdMgSe material heterostructures quality by studying the effects of growth interruptions on their optical and optoelectronic properties of

  16. EDITORIAL: Focus on Advanced Semiconductor Heterostructures for Optoelectronics

    NASA Astrophysics Data System (ADS)

    Amann, Markus C.; Capasso, Federico; Larsson, Anders; Pessa, Markus

    2009-12-01

    Semiconductor heterostructures are the basic materials underlying optoelectronic devices, particularly lasers and light-emitting diodes (LEDs). Made from various III-V-, II-VI-, SiGe- and other compound semiconductors, modern semiconductor devices are available for the generation, detection and modulation of light covering the entire ultra-violet to far-infrared spectral region. Recent approaches that introduced multilayer heterostructures tailored on the lower nanometre scale made possible artificial semiconductors with new properties, such as extended wavelength coverage, that enabled new applications. Together with ongoing progress on wide-gap semiconductors, the optical wavelengths accessible by semiconductor devices are steadily expanding towards the short-wavelength ultra-violet regime, as well as further into the far-infrared and terahertz spectral regions. It is the aim of this focus issue to present cutting-edge research topics on the most recent optoelectronic material and device developments in this field using advanced semiconductor heterostructures. Focus on Advanced Semiconductor Heterostructures for Optoelectronics Contents Theoretical and experimental investigations of the limits to the maximum output power of laser diodes H Wenzel, P Crump, A Pietrzak, X Wang, G Erbert and G Tränkle GaN/AlGaN intersubband optoelectronic devices H Machhadani, P Kandaswamy, S Sakr, A Vardi, A Wirtmüller, L Nevou, F Guillot, G Pozzovivo, M Tchernycheva, A Lupu, L Vivien, P Crozat, E Warde, C Bougerol, S Schacham, G Strasser, G Bahir, E Monroy and F H Julien Bound-to-continuum terahertz quantum cascade laser with a single-quantum-well phonon extraction/injection stage Maria I Amanti, Giacomo Scalari, Romain Terazzi, Milan Fischer, Mattias Beck, Jérôme Faist, Alok Rudra, Pascal Gallo and Eli Kapon Structural and optical characteristics of GaN/ZnO coaxial nanotube heterostructure arrays for light-emitting device applications Young Joon Hong, Jong-Myeong Jeon, Miyoung

  17. Single-material semiconductor hyperbolic metamaterials.

    PubMed

    Wei, D; Harris, C; Bomberger, C C; Zhang, J; Zide, J; Law, S

    2016-04-18

    Layered semiconductor hyperbolic metamaterials for the mid-infrared are grown by molecular beam epitaxy using a single material system, doped and undoped InAs. The onset wavelength for metamaterial behavior can be tuned from 5.8μm to beyond 10μm, while the fill factor ranges from 0.25 to 0.75, resulting in designer optical behavior. The reflection and transmission behavior were studied by Fourier transform spectroscopy and modeled using effective medium theory. We also conducted a geometric optics experiment to demonstrate negative refraction of our materials. PMID:27137307

  18. Semiconductor bridge, SCB, ignition of energetic materials

    SciTech Connect

    Bickes, R.W.; Grubelich, M.D.; Harris, S.M.; Merson, J.A.; Tarbell, W.W.

    1997-04-01

    Sandia National Laboratories` semiconductor bridge, SCB, is now being used for the ignition or initiation of a wide variety of exeoergic materials. Applications of this new technology arose because of a need at the system level to provide light weight, small volume and low energy explosive assemblies. Conventional bridgewire devices could not meet the stringent size, weight and energy requirements of our customers. We present an overview of SCB technology and the ignition characteristics for a number of energetic materials including primary and secondary explosives, pyrotechnics, thermites and intermetallics. We provide examples of systems designed to meet the modern requirements that sophisticated systems must satisfy in today`s market environments.

  19. Advanced Electrical Materials and Component Development

    NASA Technical Reports Server (NTRS)

    Schwarze, Gene E.

    2003-01-01

    The primary means to develop advanced electrical components is to develop new and improved materials for magnetic components (transformers, inductors, etc.), capacitors, and semiconductor switches and diodes. This paper will give a description and status of the internal and external research sponsored by NASA Glenn Research Center on soft magnetic materials, dielectric materials and capacitors, and high quality silicon carbide (SiC) atomically smooth substrates. The rationale for and the benefits of developing advanced electrical materials and components for the PMAD subsystem and also for the total power system will be briefly discussed.

  20. Advances in dental materials.

    PubMed

    Vaderhobli, Ram M

    2011-07-01

    The use of materials to rehabilitate tooth structures is constantly changing. Over the past decade, newer material processing techniques and technologies have significantly improved the dependability and predictability of dental material for clinicians. The greatest obstacle, however, is in choosing the right combination for continued success. Finding predictable approaches for successful restorative procedures has been the goal of clinical and material scientists. This article provides a broad perspective on the advances made in various classes of dental restorative materials in terms of their functionality with respect to pit and fissure sealants, glass ionomers, and dental composites. PMID:21726695

  1. EDITORIAL: (Nano)characterization of semiconductor materials and structures (Nano)characterization of semiconductor materials and structures

    NASA Astrophysics Data System (ADS)

    Bonanni, Alberta

    2011-06-01

    The latest impressive advancements in the epitaxial fabrication of semiconductors and in the refinement of characterization techniques have the potential to allow insight into the deep relation between materials' structural properties and their physical and chemical functionalities. Furthermore, while the comprehensive (nano)characterization of semiconductor materials and structures is becoming more and more necessary, a compendium of the currently available techniques is lacking. We are positive that an overview of the hurdles related to the specific methods, often leading to deceptive interpretations, will be most informative for the broad community working on semiconductors, and will help in shining some light onto a plethora of controversial reports found in the literature. From this perspective, with this special issue we address and highlight the challenges and misinterpretations related to complementary local (nanoscale) and more global experimental methods for the characterization of semiconductors. The six topical reviews and the three invited papers by leading experts in the specific fields collected in here are intended to provide the required broad overview on the possibilities of actual (nano)characterization methods, from the microscopy of single quantum structures, over the synchrotron-based absorption and diffraction of nano-objects, to the contentious detection of tiny magnetic signals by quantum interference and resonance techniques. We are grateful to all the authors for their valuable contributions. Moreover, I would like to thank the Editorial Board of the journal for supporting the realization of this special issue and for inviting me to serve as Guest Editor. We greatly appreciate the work of the reviewers, of the editorial staff of Semiconductor Science and Technology and of IOP Publishing. In particular, the efforts of Alice Malhador in coordinating this special issue are acknowledged.

  2. Advanced Semiconductor Dosimetry in Radiation Therapy

    SciTech Connect

    Rosenfeld, Anatoly B.

    2011-05-05

    Modern radiation therapy is very conformal, resulting in a complexity of delivery that leads to many small radiation fields with steep dose gradients, increasing error probability. Quality assurance in delivery of such radiation fields is paramount and requires real time and high spatial resolution dosimetry. Semiconductor radiation detectors due to their small size, ability to operate in passive and active modes and easy real time multichannel readout satisfy many aspects of in vivo and in a phantom quality assurance in modern radiation therapy. Update on the recent developments and improvements in semiconductor radiation detectors and their application for quality assurance in radiation therapy, based mostly on the developments at the Centre for Medical Radiation Physics (CMRP), University of Wollongong, is presented.

  3. Method of preparing nitrogen containing semiconductor material

    DOEpatents

    Barber, Greg D.; Kurtz, Sarah R.

    2004-09-07

    A method of combining group III elements with group V elements that incorporates at least nitrogen from a nitrogen halide for use in semiconductors and in particular semiconductors in photovoltaic cells.

  4. Method for depositing high-quality microcrystalline semiconductor materials

    DOEpatents

    Guha, Subhendu; Yang, Chi C.; Yan, Baojie

    2011-03-08

    A process for the plasma deposition of a layer of a microcrystalline semiconductor material is carried out by energizing a process gas which includes a precursor of the semiconductor material and a diluent with electromagnetic energy so as to create a plasma therefrom. The plasma deposits a layer of the microcrystalline semiconductor material onto the substrate. The concentration of the diluent in the process gas is varied as a function of the thickness of the layer of microcrystalline semiconductor material which has been deposited. Also disclosed is the use of the process for the preparation of an N-I-P type photovoltaic device.

  5. Advanced desiccant materials research

    NASA Astrophysics Data System (ADS)

    Czanderna, A. W.; Thomas, T. M.

    1986-05-01

    The long-range goal of this task is to understand the role of surface phenomena in desiccant cooling materials. The background information includes a brief introduction to desiccant cooling systems (DCS) and the role of the desiccant as a system component. The purpose, background, rationale, and long-term technical approach for studying advanced desiccant materials are then treated. Experimental methods for measuring water vapor sorption by desiccants are described, and the rationale is then given for choosing a quartz crystal microbalance (QCM) for measuring sorption isotherms, rates, and cyclic stability. Background information is given about the QCM, including the quartz crystal resonator itself, the support structure for the quartz crystal, and the advantages and limitations of a QCM. The apparatus assembled and placed into operation during CY 1985 is described. The functions of the principal components of the equipment, i.e., the QCM, vacuum system, pressure gauges, residual gas analyzer, constant temperature bath, and data acquisition system, are described as they relate to the water vapor sorption measurements now under way. The criteria for narrowing the potential candidates as advanced desiccant materials for the initial studies are given. Also given is a list of 20 principal candidate materials identified based on the criteria and data available in the literature.

  6. Chalcogenoarene Semiconductors: New Ideas From Old Materials

    SciTech Connect

    Zhang, Lei; Fakhouri, Sami M.; Liu, Feng; Timmons, Justin C.; Ran, Niva A.; Briseno, Alejandro L.

    2010-01-01

    There are certain aspects of the electronic and packing behavior of planar aromatic molecules containing exocyclic chalcogen atoms (i.e., sulfur, selenium, tellurium) which need considerable re-enlightenment. This class of semiconductors was once regarded as next-generation π-donors for applications in charge-transfer complexes. With the advent of new device technologies such as light-emitting diodes, solar cells, and organic transistors, the interest in charge-transfer complexes eventually tapered off. However, significant progress in the use of this class of materials in modern organic devices has been reported over the last five years. In this article, we review the exocyclic arenes with chalcogen atoms in peri-positions, summarize synthetic routes to these compounds and take a close look at their basic properties. Particular emphasis is placed upon their packing arrangements and the effect of exocyclic chalcogen atoms on the crystal packing motifs. Selected example applications from this class of materials in different fields will be highlighted. As a final note, we provide a prediction for their use in mainstream applications such as energy and fundamental charge transport/generation.

  7. Accelerating advanced-materials commercialization

    NASA Astrophysics Data System (ADS)

    Maine, Elicia; Seegopaul, Purnesh

    2016-05-01

    Long commercialization times, high capital costs and sustained uncertainty deter investment in innovation for advanced materials. With appropriate strategies, technology and market uncertainties can be reduced, and the commercialization of advanced materials accelerated.

  8. Composition/bandgap selective dry photochemical etching of semiconductor materials

    DOEpatents

    Ashby, C.I.H.; Dishman, J.L.

    1985-10-11

    Disclosed is a method of selectively photochemically dry etching a first semiconductor material of a given composition and direct bandgap Eg/sub 1/ in the presence of a second semiconductor material of a different composition and direct bandgap Eg/sub 2/, wherein Eg/sub 2/ > Eg/sub 1/, said second semiconductor material substantially not being etched during said method. The method comprises subjecting both materials to the same photon flux and to the same gaseous etchant under conditions where said etchant would be ineffective for chemical etching of either material were the photons not present, said photons being of an energy greater than Eg/sub 1/ but less than Eg/sub 2/, whereby said first semiconductor material is photochemically etched and said second material is substantially not etched.

  9. Composition/bandgap selective dry photochemical etching of semiconductor materials

    DOEpatents

    Ashby, Carol I. H.; Dishman, James L.

    1987-01-01

    A method of selectively photochemically dry etching a first semiconductor material of a given composition and direct bandgap Eg.sub.1 in the presence of a second semiconductor material of a different composition and direct bandgap Eg.sub.2, wherein Eg.sub.2 >Eg.sub.1, said second semiconductor material substantially not being etched during said method, comprises subjecting both materials to the same photon flux and to the same gaseous etchant under conditions where said etchant would be ineffective for chemical etching of either material were the photons not present, said photons being of an energy greater than Eg.sub.1 but less than Eg.sub.2, whereby said first semiconductor material is photochemically etched and said second material is substantially not etched.

  10. Advanced Stress, Strain And Geometrical Analysis In Semiconductor Devices

    SciTech Connect

    Neels, Antonia; Dommann, Alex; Niedermann, Philippe; Farub, Claudiu; Kaenel, Hans von

    2010-11-24

    High stresses and defect densities increases the risk of semiconductor device failure. Reliability studies on potential failure sources have an impact on design and are essential to assure the long term functioning of the device. Related to the dramatically smaller volume of semiconductor devices and new bonding techniques on such devices, new methods in testing and qualification are needed. Reliability studies on potential failure sources have an impact on design and are essential to assure the long term functioning of the device. In this paper, the applications of advanced High Resolution X-ray Diffraction (HRXRD) methods in strain, defect and deformation analysis on semiconductor devices are discussed. HRXRD with Rocking Curves (RC's) and Reciprocal Space Maps (RSM's) is used as accurate, non-destructive experimental method to evaluate the crystalline quality, and more precisely for the given samples, the in-situ strain, defects and geometrical parameters such as tilt and bending of device. The combination with advanced FEM simulations gives the possibility to support efficiently semiconductor devices design.

  11. Advanced materials nanocharacterization

    NASA Astrophysics Data System (ADS)

    Giannazzo, Filippo; Eyben, Pierre; Baranowski, Jacek; Camassel, Jean; Lányi, Stefan

    2011-12-01

    This special issue of Nanoscale Research Letters contains scientific contributions presented at the Symposium D "Multidimensional Electrical and Chemical Characterization at the Nanometer-scale of Organic and Inorganic Semiconductors" of the E-MRS Fall Meeting 2010, which was held in Warsaw, Poland from 13th to 17th September, 2010.

  12. Advanced composite materials and processes

    NASA Technical Reports Server (NTRS)

    Baucom, Robert M.

    1991-01-01

    Composites are generally defined as two or more individual materials, which, when combined into a single material system, results in improved physical and/or mechanical properties. The freedom of choice of the starting components for composites allows the generation of materials that can be specifically tailored to meet a variety of applications. Advanced composites are described as a combination of high strength fibers and high performance polymer matrix materials. These advanced materials are required to permit future aircraft and spacecraft to perform in extended environments. Advanced composite precursor materials, processes for conversion of these materials to structures, and selected applications for composites are reviewed.

  13. Materials for advanced batteries

    SciTech Connect

    Murphy, D.W.; Broadhead, J.

    1980-01-01

    The requirements of battery systems are considered along with some recent studies of materials of importance in aqueous electrochemical energy-storage systems, lithium-aluminum/iron sulfide batteries, solid electrolytes, molten salt electrolytes in secondary batteries, the recharging of the lithium electrode in organic electrolytes, intercalation electrodes, and interface phenomena in advanced batteries. Attention is given to a lead-acid battery overview, the design and development of micro-reference electrodes for the lithium/metal-sulfide cell system, molten salt electrochemical studies and high energy density cell development, a selenium (IV) cathode in molten chloroaluminates, and the behavior of hard and soft ions in solid electrolytes. Other topics explored are related to the use of the proton conductor hydrogen uranyl phosphate tetrahydrate as the solid electrolyte in hydride-air batteries and hydrogen-oxygen fuel cells, the behavior of the passivating film in Li/SOCl2 cells under various conditions, and the analysis of surface insulating films in lithium nitride crystals.

  14. Advanced neutron absorber materials

    DOEpatents

    Branagan, Daniel J.; Smolik, Galen R.

    2000-01-01

    A neutron absorbing material and method utilizing rare earth elements such as gadolinium, europium and samarium to form metallic glasses and/or noble base nano/microcrystalline materials, the neutron absorbing material having a combination of superior neutron capture cross sections coupled with enhanced resistance to corrosion, oxidation and leaching.

  15. Advanced Materials Technology

    NASA Technical Reports Server (NTRS)

    Blankenship, C. P. (Compiler); Teichman, L. A. (Compiler)

    1982-01-01

    Composites, polymer science, metallic materials (aluminum, titanium, and superalloys), materials processing technology, materials durability in the aerospace environment, ceramics, fatigue and fracture mechanics, tribology, and nondestructive evaluation (NDE) are discussed. Research and development activities are introduced to the nonaerospace industry. In order to provide a convenient means to help transfer aerospace technology to the commercial mainstream in a systematic manner.

  16. Advanced Electrical Materials and Components Being Developed

    NASA Technical Reports Server (NTRS)

    Schwarze, Gene E.

    2004-01-01

    All aerospace systems require power management and distribution (PMAD) between the energy and power source and the loads. The PMAD subsystem can be broadly described as the conditioning and control of unregulated power from the energy source and its transmission to a power bus for distribution to the intended loads. All power and control circuits for PMAD require electrical components for switching, energy storage, voltage-to-current transformation, filtering, regulation, protection, and isolation. Advanced electrical materials and component development technology is a key technology to increasing the power density, efficiency, reliability, and operating temperature of the PMAD. The primary means to develop advanced electrical components is to develop new and/or significantly improved electronic materials for capacitors, magnetic components, and semiconductor switches and diodes. The next important step is to develop the processing techniques to fabricate electrical and electronic components that exceed the specifications of presently available state-of-the-art components. The NASA Glenn Research Center's advanced electrical materials and component development technology task is focused on the following three areas: 1) New and/or improved dielectric materials for the development of power capacitors with increased capacitance volumetric efficiency, energy density, and operating temperature; 2) New and/or improved high-frequency, high-temperature soft magnetic materials for the development of transformers and inductors with increased power density, energy density, electrical efficiency, and operating temperature; 3) Packaged high-temperature, high-power density, high-voltage, and low-loss SiC diodes and switches.

  17. Recent advances in organic semiconducting materials

    NASA Astrophysics Data System (ADS)

    Ostroverkhova, Oksana

    2011-10-01

    Organic semiconductors have attracted attention due to their low cost, easy fabrication, and tunable properties. Applications of organic materials in thin-film transistors, solar cells, light-emitting diodes, sensors, and many other devices have been actively explored. Recent advances in organic synthesis, material processing, and device fabrication led to significant improvements in (opto)electronic device performance. However, a number of challenges remain. These range from lack of understanding of basic physics of intermolecular interactions that determine optical and electronic properties of organic materials to difficulties in controlling film morphology and stability. In this presentation, current state of the field will be reviewed and recent results related to charge carrier and exciton dynamics in organic thin films will be presented.[4pt] In collaboration with Whitney Shepherd, Mark Kendrick, Andrew Platt, Oregon State University; Marsha Loth and John Anthony, University of Kentucky.

  18. Conduit for high temperature transfer of molten semiconductor crystalline material

    NASA Technical Reports Server (NTRS)

    Fiegl, George (Inventor); Torbet, Walter (Inventor)

    1983-01-01

    A conduit for high temperature transfer of molten semiconductor crystalline material consists of a composite structure incorporating a quartz transfer tube as the innermost member, with an outer thermally insulating layer designed to serve the dual purposes of minimizing heat losses from the quartz tube and maintaining mechanical strength and rigidity of the conduit at the elevated temperatures encountered. The composite structure ensures that the molten semiconductor material only comes in contact with a material (quartz) with which it is compatible, while the outer layer structure reinforces the quartz tube, which becomes somewhat soft at molten semiconductor temperatures. To further aid in preventing cooling of the molten semiconductor, a distributed, electric resistance heater is in contact with the surface of the quartz tube over most of its length. The quartz tube has short end portions which extend through the surface of the semiconductor melt and which are lef bare of the thermal insulation. The heater is designed to provide an increased heat input per unit area in the region adjacent these end portions.

  19. Photoconductive terahertz generation from textured semiconductor materials

    NASA Astrophysics Data System (ADS)

    Collier, Christopher M.; Stirling, Trevor J.; Hristovski, Ilija R.; Krupa, Jeffrey D. A.; Holzman, Jonathan F.

    2016-03-01

    Photoconductive (PC) terahertz (THz) emitters are often limited by ohmic loss and Joule heating—as these effects can lead to thermal runaway and premature device breakdown. To address this, the proposed work introduces PC THz emitters based on textured InP materials. The enhanced surface recombination and decreased charge-carrier lifetimes of the textured InP materials reduce residual photocurrents, following the picosecond THz waveform generation, and this diminishes Joule heating in the emitters. A non-textured InP material is used as a baseline for studies of fine- and coarse-textured InP materials. Ultrafast pump-probe and THz setups are used to measure the charge-carrier lifetimes and THz response/photocurrent consumption of the respective materials and emitters. It is found that similar temporal and spectral characteristics can be achieved with the THz emitters, but the level of photocurrent consumption (yielding Joule heating) is greatly reduced in the textured materials.

  20. Neutral beam processing of semiconductor materials

    SciTech Connect

    Cross, J.; Hoffbauer, M.

    1996-09-01

    This is the final report of a one-year, Laboratory-Directed Research and Development (LDRD) project at the Los Alamos National Laboratory (LANL). The most important challenge facing the US and global microelectronics industry is to identify and develop the next generation of processing technology to produce device structures with dimensions substantially less than 0.25 microns. This project sought to develop controlled, contamination-free etching techniques that are more selective and less damaging than current methods, which are based on inducing surface chemical reactions by rather crude ion-damage mechanisms. The use of non-charged particle etching and cleaning processes in the production of memory and microprocessor chips has been identified by The National Technology Roadmap for Semiconductors as a new manufacturing technique that may aid in the quest for feature sizes of 0.1 micron and lower. The Hyperthermal Neutral Beam Facility at Los Alamos has demonstrated significant improvement over ion-assisted etching in experiments using energetic oxygen and chlorine atoms.

  1. Contributive research in compound semiconductor material and related devices

    NASA Astrophysics Data System (ADS)

    Twist, James R.

    1988-05-01

    The objective of this program was to provide the Electronic Device Branch (AFWAL/AADR) with the support needed to perform state of the art electronic device research. In the process of managing and performing on the project, UES has provided a wide variety of scientific and engineering talent who worked in-house for the Avionics Laboratory. These personnel worked on many different types of research programs from gas phase microwave driven lasers, CVD and MOCVD of electronic materials to Electronic Device Technology for new devices. The fields of research included MBE and theoretical research in this novel growth technique. Much of the work was slanted towards the rapidly developing technology of GaAs and the general thrust of the research that these tasks started has remained constant. This work was started because the Avionics Laboratory saw a chance to advance the knowledge and level of the current device technology by working in the compounds semiconductor field. UES is pleased to have had the opportunity to perform on this program and is looking forward to future efforts with the Avionics Laboratory.

  2. Materials Research Society Symposium Proceedings. Volume 339: Diamond, SiC and nitride wide bandgap semiconductors

    NASA Astrophysics Data System (ADS)

    Carter, Calvin H.; Gildenblat, Gennady; Nakamura, Shuji; Nemanich, Robert J.

    1994-04-01

    This symposium was directed toward the potential of using diamond, SiC, and nitride wide bandgap semiconductors. The symposium emphasized materials issues related to the semiconducting properties of these wide bandgap materials. Both experimental and theoretical studies were presented. Solid advances were reported in the growth techniques of all three materials groups. Contributions demonstrated the critical importance of surfaces, interfaces, doping, defects, and impurities Reports demonstrated potential device applications ranging from unique electronic devices to blue/UV light emitters/detectors and even novel structures employing a negative electron affinity. The overall theme of the symposium was that materials research into wide bandgap semiconductors will make available exciting new applications, and that we are just beginning to understand the potential of these materials.

  3. Development of advanced thermoelectric materials

    NASA Technical Reports Server (NTRS)

    1984-01-01

    The development of an advanced thermoelectric material for radioisotope thermoelectric generator (RTG) applications is reported. A number of materials were explored. The bulk of the effort, however, was devoted to improving silicon germanium alloys by the addition of gallium phosphide, the synthesis and evaluation of lanthanum chrome sulfide and the formulation of various mixtures of lanthanum sulfide and chrome sulfide. It is found that each of these materials exhibits promise as a thermoelectric material.

  4. Method of depositing wide bandgap amorphous semiconductor materials

    DOEpatents

    Ellis, Jr., Frank B.; Delahoy, Alan E.

    1987-09-29

    A method of depositing wide bandgap p type amorphous semiconductor materials on a substrate without photosensitization by the decomposition of one or more higher order gaseous silanes in the presence of a p-type catalytic dopant at a temperature of about 200.degree. C. and a pressure in the range from about 1-50 Torr.

  5. Photoconductive terahertz generation from textured semiconductor materials

    PubMed Central

    Collier, Christopher M.; Stirling, Trevor J.; Hristovski, Ilija R.; Krupa, Jeffrey D. A.; Holzman, Jonathan F.

    2016-01-01

    Photoconductive (PC) terahertz (THz) emitters are often limited by ohmic loss and Joule heating—as these effects can lead to thermal runaway and premature device breakdown. To address this, the proposed work introduces PC THz emitters based on textured InP materials. The enhanced surface recombination and decreased charge-carrier lifetimes of the textured InP materials reduce residual photocurrents, following the picosecond THz waveform generation, and this diminishes Joule heating in the emitters. A non-textured InP material is used as a baseline for studies of fine- and coarse-textured InP materials. Ultrafast pump-probe and THz setups are used to measure the charge-carrier lifetimes and THz response/photocurrent consumption of the respective materials and emitters. It is found that similar temporal and spectral characteristics can be achieved with the THz emitters, but the level of photocurrent consumption (yielding Joule heating) is greatly reduced in the textured materials. PMID:26979292

  6. Advanced Pressure Boundary Materials

    SciTech Connect

    Santella, Michael L; Shingledecker, John P

    2007-01-01

    Increasing the operating temperatures of fossil power plants is fundamental to improving thermal efficiencies and reducing undesirable emissions such as CO{sub 2}. One group of alloys with the potential to satisfy the conditions required of higher operating temperatures is the advanced ferritic steels such as ASTM Grade 91, 9Cr-2W, and 12Cr-2W. These are Cr-Mo steels containing 9-12 wt% Cr that have martensitic microstructures. Research aimed at increasing the operating temperature limits of the 9-12 wt% Cr steels and optimizing them for specific power plant applications has been actively pursued since the 1970's. As with all of the high strength martensitic steels, specifying upper temperature limits for tempering the alloys and heat treating weldments is a critical issue. To support this aspect of development, thermodynamic analysis was used to estimate how this critical temperature, the A{sub 1} in steel terminology, varies with alloy composition. The results from the thermodynamic analysis were presented to the Strength of Weldments subgroup of the ASME Boiler & Pressure Vessel Code and are being considered in establishing maximum postweld heat treatment temperatures. Experiments are also being planned to verify predictions. This is part of a CRADA project being done with Alstom Power, Inc.

  7. Advanced materials for space

    NASA Technical Reports Server (NTRS)

    Tenney, D. R.; Slemp, W. S.; Long, E. R., Jr.; Sykes, G. F.

    1980-01-01

    The principal thrust of the LSST program is to develop the materials technology required for confident design of large space systems such as antennas and platforms. Areas of research in the FY-79 program include evaluation of polysulfones, measurement of the coefficient of thermal expansion of low expansion composite laminates, thermal cycling effects, and cable technology. The development of new long thermal control coatings and adhesives for use in space is discussed. The determination of radiation damage mechanisms of resin matrix composites and the formulation of new polymer matrices that are inherently more stable in the space environment are examined.

  8. Method for depositing layers of high quality semiconductor material

    DOEpatents

    Guha, Subhendu; Yang, Chi C.

    2001-08-14

    Plasma deposition of substantially amorphous semiconductor materials is carried out under a set of deposition parameters which are selected so that the process operates near the amorphous/microcrystalline threshold. This threshold varies as a function of the thickness of the depositing semiconductor layer; and, deposition parameters, such as diluent gas concentrations, must be adjusted as a function of layer thickness. Also, this threshold varies as a function of the composition of the depositing layer, and in those instances where the layer composition is profiled throughout its thickness, deposition parameters must be adjusted accordingly so as to maintain the amorphous/microcrystalline threshold.

  9. Fatigue of advanced materials

    SciTech Connect

    Dauskardt, R.H.; Ritchie, R.O. . Center for Advanced Materials); Cox, B.N. )

    1993-08-01

    The development of toughened ceramics over the past 10 to 15 years is arguably one of the most important materials breakthroughs of this century. Monolithic and composite ceramic materials having fracture toughnesses up to an order of magnitude higher than those available 20 years ago have been produced using technologies based on scientific understanding and micromechanical models for in situ phase transformation, fiber bridging, ductile-particle toughening, and other toughening mechanisms. The irony of this, however, is that although ceramics can now be seriously considered for many structural applications, they can also, contrary to popular belief, be susceptible to degradation under cyclic fatigue loading. This is true even when the loading is fully compressive. As a result, a great deal of attention is now being paid to ceramic fatigue, largely because of the importance of cyclic loading in many of the potential applications for ceramics, such as gas-turbine and reciprocating engines. However, because the field is in its infancy, only limited fatigue property data have been documented, understanding of salient fatigue mechanisms has not been achieved, and the design of ceramic microstructures for optimum fatigue resistance has yet to be attempted.

  10. Methods of Measurement for Semiconductor Materials, Process Control, and Devices

    NASA Technical Reports Server (NTRS)

    Bullis, W. M. (Editor)

    1973-01-01

    The development of methods of measurement for semiconductor materials, process control, and devices is reported. Significant accomplishments include: (1) Completion of an initial identification of the more important problems in process control for integrated circuit fabrication and assembly; (2) preparations for making silicon bulk resistivity wafer standards available to the industry; and (3) establishment of the relationship between carrier mobility and impurity density in silicon. Work is continuing on measurement of resistivity of semiconductor crystals; characterization of generation-recombination-trapping centers, including gold, in silicon; evaluation of wire bonds and die attachment; study of scanning electron microscopy for wafer inspection and test; measurement of thermal properties of semiconductor devices; determination of S-parameters and delay time in junction devices; and characterization of noise and conversion loss of microwave detector diodes.

  11. Anisotropy-based crystalline oxide-on-semiconductor material

    DOEpatents

    McKee, Rodney Allen; Walker, Frederick Joseph

    2000-01-01

    A semiconductor structure and device for use in a semiconductor application utilizes a substrate of semiconductor-based material, such as silicon, and a thin film of a crystalline oxide whose unit cells are capable of exhibiting anisotropic behavior overlying the substrate surface. Within the structure, the unit cells of the crystalline oxide are exposed to an in-plane stain which influences the geometric shape of the unit cells and thereby arranges a directional-dependent quality of the unit cells in a predisposed orientation relative to the substrate. This predisposition of the directional-dependent quality of the unit cells enables the device to take beneficial advantage of characteristics of the structure during operation. For example, in the instance in which the crystalline oxide of the structure is a perovskite, a spinel or an oxide of similarly-related cubic structure, the structure can, within an appropriate semiconductor device, exhibit ferroelectric, piezoelectric, pyroelectric, electro-optic, ferromagnetic, antiferromagnetic, magneto-optic or large dielectric properties that synergistically couple to the underlying semiconductor substrate.

  12. Advanced Aerospace Materials by Design

    NASA Technical Reports Server (NTRS)

    Srivastava, Deepak; Djomehri, Jahed; Wei, Chen-Yu

    2004-01-01

    The advances in the emerging field of nanophase thermal and structural composite materials; materials with embedded sensors and actuators for morphing structures; light-weight composite materials for energy and power storage; and large surface area materials for in-situ resource generation and waste recycling, are expected to :revolutionize the capabilities of virtually every system comprising of future robotic and :human moon and mars exploration missions. A high-performance multiscale simulation platform, including the computational capabilities and resources of Columbia - the new supercomputer, is being developed to discover, validate, and prototype next generation (of such advanced materials. This exhibit will describe the porting and scaling of multiscale 'physics based core computer simulation codes for discovering and designing carbon nanotube-polymer composite materials for light-weight load bearing structural and 'thermal protection applications.

  13. Future requirements for advanced materials

    NASA Technical Reports Server (NTRS)

    Olstad, W. B.

    1980-01-01

    Recent advances and future trends in aerospace materials technology are reviewed with reference to metal alloys, high-temperature composites and adhesives, tungsten fiber-reinforced superalloys, hybrid materials, ceramics, new ablative materials, such as carbon-carbon composite and silica tiles used in the Shuttle Orbiter. The technologies of powder metallurgy coupled with hot isostatic pressing, near net forging, complex large shape casting, chopped fiber molding, superplastic forming, and computer-aided design and manufacture are emphasized.

  14. Limited reaction processing for semiconductor materials preparation

    NASA Astrophysics Data System (ADS)

    Hoyt, J. L.

    1991-07-01

    Limited Reaction Processing (LRP) is a layer deposition technique based upon a combination of rapid thermal processing (RTP) and chemical vapor deposition. The versatility of LRP was shwon in research on epitaxial growth in three different materials systems. Research was spurred at several other laboratories in the area of epitaxial growth and applications involving RTP techniques, particularly in the Si(1-x)Ge(x) materials system. The first CVD grown Si/Si(1-x)Ge(x) heterojunction bipolar transistors were fabricated using this technique, with maximum oscillation frequencies on the order of 40 GHz. In the III-V area, arsine alternative sources were explored for GaAs expitaxy which greatly improve the safety of MOCVD. A new atomic layer growth technique was developed by combining LRP with an alternating gas pulse method.

  15. Hydrogen-bond Specific Materials Modification in Group IV Semiconductors

    SciTech Connect

    Tolk, Norman H.; Feldman, L. C.; Luepke, G.

    2015-09-14

    Executive summary Semiconductor dielectric crystals consist of two fundamental components: lattice atoms and electrons. The former component provides a crystalline structure that can be disrupted by various defects or the presence of an interface, or by transient oscillations known as phonons. The latter component produces an energetic structure that is responsible for the optical and electronic properties of the material, and can be perturbed by lattice defects or by photo-excitation. Over the period of this project, August 15, 1999 to March 31, 2015, a persistent theme has been the elucidation of the fundamental role of defects arising from the presence of radiation damage, impurities (in particular, hydrogen), localized strain or some combination of all three. As our research effort developed and evolved, we have experienced a few title changes, which reflected this evolution. Throughout the project, ultrafast lasers usually in a pump-probe configuration provided the ideal means to perturb and study semiconductor crystals by both forms of excitation, vibrational (phonon) and electronic (photon). Moreover, we have found in the course of this research that there are many interesting and relevant scientific questions that may be explored when phonon and photon excitations are controlled separately. Our early goals were to explore the dynamics of bond-selective vibrational excitation of hydrogen from point defects and impurities in crystalline and amorphous solids, initiating an investigation into the behavior of hydrogen isotopes utilizing a variety of ultrafast characterization techniques, principally transient bleaching spectroscopy to experimentally obtain vibrational lifetimes. The initiative could be divided into three related areas: (a) investigation of the change in electronic structure of solids due to the presence of hydrogen defect centers, (b) dynamical studies of hydrogen in materials and (c) characterization and stability of metastable hydrogen

  16. Advanced materials for energy storage.

    PubMed

    Liu, Chang; Li, Feng; Ma, Lai-Peng; Cheng, Hui-Ming

    2010-02-23

    Popularization of portable electronics and electric vehicles worldwide stimulates the development of energy storage devices, such as batteries and supercapacitors, toward higher power density and energy density, which significantly depends upon the advancement of new materials used in these devices. Moreover, energy storage materials play a key role in efficient, clean, and versatile use of energy, and are crucial for the exploitation of renewable energy. Therefore, energy storage materials cover a wide range of materials and have been receiving intensive attention from research and development to industrialization. In this Review, firstly a general introduction is given to several typical energy storage systems, including thermal, mechanical, electromagnetic, hydrogen, and electrochemical energy storage. Then the current status of high-performance hydrogen storage materials for on-board applications and electrochemical energy storage materials for lithium-ion batteries and supercapacitors is introduced in detail. The strategies for developing these advanced energy storage materials, including nanostructuring, nano-/microcombination, hybridization, pore-structure control, configuration design, surface modification, and composition optimization, are discussed. Finally, the future trends and prospects in the development of advanced energy storage materials are highlighted. PMID:20217798

  17. Novel engineered compound semiconductor heterostructures for advanced electronics applications

    NASA Astrophysics Data System (ADS)

    Stillman, Gregory E.; Holonyak, Nick, Jr.; Coleman, James J.

    1992-06-01

    To provide the technology base that will enable SDIO capitalization on the performance advantages offered through novel engineered multiple-lavered compound semiconductor structures, this project has focussed on three specific areas: (1) carbon doping of AlGaAs/GaAs and InP/InGaAs materials for reliable high frequency heterojunction bipolar transistors; (2) impurity induced layer disordering and the environmental degradation of AlxGal-xAs-GaAs quantum-well heterostructures and the native oxide stabilization of AlxGal-xAs-GaAs quantum well heterostructure lasers; and (3) non-planar and strained-layer quantum well heterostructure lasers and laser arrays. The accomplishments in this three year research are reported in fifty-six publications and the abstracts included in this report.

  18. Optical band gaps of organic semiconductor materials

    NASA Astrophysics Data System (ADS)

    Costa, José C. S.; Taveira, Ricardo J. S.; Lima, Carlos F. R. A. C.; Mendes, Adélio; Santos, Luís M. N. B. F.

    2016-08-01

    UV-Vis can be used as an easy and forthright technique to accurately estimate the band gap energy of organic π-conjugated materials, widely used as thin films/composites in organic and hybrid electronic devices such as OLEDs, OPVs and OFETs. The electronic and optical properties, including HOMO-LUMO energy gaps of π-conjugated systems were evaluated by UV-Vis spectroscopy in CHCl3 solution for a large number of relevant π-conjugated systems: tris-8-hydroxyquinolinatos (Alq3, Gaq3, Inq3, Al(qNO2)3, Al(qCl)3, Al(qBr)3, In(qNO2)3, In(qCl)3 and In(qBr)3); triphenylamine derivatives (DDP, p-TTP, TPB, TPD, TDAB, m-MTDAB, NPB, α-NPD); oligoacenes (naphthalene, anthracene, tetracene and rubrene); oligothiophenes (α-2T, β-2T, α-3T, β-3T, α-4T and α-5T). Additionally, some electronic properties were also explored by quantum chemical calculations. The experimental UV-Vis data are in accordance with the DFT predictions and indicate that the band gap energies of the OSCs dissolved in CHCl3 solution are consistent with the values presented for thin films.

  19. FTIR characterization of advanced materials

    NASA Technical Reports Server (NTRS)

    Young, P. R.; Chang, A. C.

    1986-01-01

    This paper surveys the application of Fourier transform infrared spectroscopy to the characterization of advanced materials. FTIR sampling techniques including internal and external reflectance and photoacoustic spectroscopy are discussed. Representative examples from the literature of the analysis of resins, fibers, prepregs and composites are reviewed. A discussion of several promising specialized FTIR techniques is also presented.

  20. More Efficient Power Conversion for EVs: Gallium-Nitride Advanced Power Semiconductor and Packaging

    SciTech Connect

    2010-02-01

    Broad Funding Opportunity Announcement Project: Delphi is developing power converters that are smaller and more energy efficient, reliable, and cost-effective than current power converters. Power converters rely on power transistors which act like a very precisely controlled on-off switch, controlling the electrical energy flowing through an electrical circuit. Most power transistors today use silicon (Si) semiconductors. However, Delphi is using semiconductors made with a thin layer of gallium-nitride (GaN) applied on top of the more conventional Si material. The GaN layer increases the energy efficiency of the power transistor and also enables the transistor to operate at much higher temperatures, voltages, and power-density levels compared to its Si counterpart. Delphi is packaging these high-performance GaN semiconductors with advanced electrical connections and a cooling system that extracts waste heat from both sides of the device to further increase the device’s efficiency and allow more electrical current to flow through it. When combined with other electronic components on a circuit board, Delphi’s GaN power transistor package will help improve the overall performance and cost-effectiveness of HEVs and EVs.

  1. Neutron detection using boron gallium nitride semiconductor material

    SciTech Connect

    Atsumi, Katsuhiro; Inoue, Yoku; Nakano, Takayuki; Mimura, Hidenori; Aoki, Toru

    2014-03-01

    In this study, we developed a new neutron-detection device using a boron gallium nitride (BGaN) semiconductor in which the B atom acts as a neutron converter. BGaN and gallium nitride (GaN) samples were grown by metal organic vapor phase epitaxy, and their radiation detection properties were evaluated. GaN exhibited good sensitivity to α-rays but poor sensitivity to γ-rays. Moreover, we confirmed that electrons were generated in the depletion layer under neutron irradiation. This resulted in a neutron-detection signal after α-rays were generated by the capture of neutrons by the B atoms. These results prove that BGaN is useful as a neutron-detecting semiconductor material.

  2. Electrochemical test methods for advanced battery and semiconductor technology

    NASA Astrophysics Data System (ADS)

    Hsu, Chao-Hung

    This dissertation consists of two studies. The first study was the evaluation of metallic materials for advanced lithium ion batteries and the second study was the determination of the dielectric constant k for the low-k materials. The advanced lithium ion battery is miniature for implantable medical devices and capable of being recharged from outside of the body using magnetic induction without physical connections. The stability of metallic materials employed in the lithium ion battery is one of the major safety concerns. Three types of materials---Pt-Ir alloy, Ti alloys, and stainless steels---were evaluated extensively in this study. The electrochemical characteristics of Pt-Ir alloy, Ti alloys, and stainless steels were evaluated in several types of battery electrolytes in order to determine the candidate materials for long-term use in lithium ion batteries. The dissolution behavior of these materials and the decomposition behavior of the battery electrolyte were investigated using the anodic potentiodynamic polarization (APP) technique. Lifetime prediction for metal dissolution was conducted using constant potential polarization (CPP) technique. The electrochemical impedance spectroscopy (EIS) technique was employed to investigate the metal dissolution behavior or the battery electrolyte decomposition at the open circuit potential (OCP). The scanning electron microscope (SEM) was used to observe the morphology changes after these tests. The effects of experimental factors on the corrosion behaviors of the metallic materials and stabilities of the battery electrolytes were also investigated using the 23 factorial design approach. Integration of materials having low dielectric constant k as interlayer dielectrics and/or low-resistivity conductors will partially solve the RC delay problem for the limiting performance of high-speed logic chips. The samples of JSR LKD 5109 material capped by several materials were evaluated by using EIS. The feasibility of using

  3. Materials Science and Device Physics of 2-Dimensional Semiconductors

    NASA Astrophysics Data System (ADS)

    Fang, Hui

    Materials and device innovations are the keys to future technology revolution. For MOSFET scaling in particular, semiconductors with ultra-thin thickness on insulator platform is currently of great interest, due to the potential of integrating excellent channel materials with the industrially mature Si processing. Meanwhile, ultra-thin thickness also induces strong quantum confinement which in turn affect most of the material properties of these 2-dimensional (2-D) semiconductors, providing unprecedented opportunities for emerging technologies. In this thesis, multiple novel 2-D material systems are explored. Chapter one introduces the present challenges faced by MOSFET scaling. Chapter two covers the integration of ultrathin III V membranes with Si. Free standing ultrathin III-V is studied to enable high performance III-V on Si MOSFETs with strain engineering and alloying. Chapter three studies the light absorption in 2-D membranes. Experimental results and theoretical analysis reveal that light absorption in the 2-D quantum membranes is quantized into a fundamental physical constant, where we call it the quantum unit of light absorption, irrelevant of most of the material dependent parameters. Chapter four starts to focus on another 2-D system, atomic thin layered chalcogenides. Single and few layered chalcogenides are first explored as channel materials, with focuses in engineering the contacts for high performance MOSFETs. Contact treatment by molecular doping methods reveals that many layered chalcogenides other than MoS2 exhibit good transport properties at single layer limit. Finally, Chapter five investigated 2-D van der Waals heterostructures built from different single layer chalcogenides. The investigation in a WSe2/MoS2 hetero-bilayer shows a large Stokes like shift between photoluminescence peak and lowest absorption peak, as well as strong photoluminescence intensity, consistent with spatially indirect transition in a type II band alignment in this

  4. An Assessment of Critical Dimension Small Angle X-ray Scattering Metrology for Advanced Semiconductor Manufacturing

    NASA Astrophysics Data System (ADS)

    Settens, Charles M.

    Simultaneous migration of planar transistors to FinFET architectures, the introduction of a plurality of materials to ensure suitable electrical characteristics, and the establishment of reliable multiple patterning lithography schemes to pattern sub-10 nm feature sizes imposes formidable challenges to current in-line dimensional metrologies. Because the shape of a FinFET channel cross-section immediately influences the electrical characteristics, the evaluation of 3D device structures requires measurement of parameters beyond traditional critical dimension (CD), including their sidewall angles, top corner rounding and footing, roughness, recesses and undercuts at single nanometer dimensions; thus, metrologies require sub-nm and approaching atomic level measurement uncertainty. Synchrotron critical dimension small angle X-ray scattering (CD-SAXS) has unique capabilities to non-destructively monitor the cross-section shape of surface structures with single nanometer uncertainty and can perform overlay metrology to sub-nm uncertainty. In this dissertation, we perform a systematic experimental investigation using CD-SAXS metrology on a hierarchy of semiconductor 3D device architectures including, high-aspect-ratio contact holes, H 2 annealed Si fins, and a series of grating type samples at multiple points along a FinFET fabrication process increasing in structural intricacy and ending with fully fabricated FinFET. Comparative studies between CD-SAXS metrology and other relevant semiconductor dimensional metrologies, particularly CD-SEM, CD-AFM and TEM are used to determine physical limits of CD-SAXS approach for advanced semiconductor samples. CD-SAXS experimental tradeoffs, advice for model-dependent analysis and thoughts on the compatibility with a semiconductor manufacturing environment are discussed.

  5. Methods for forming group III-arsenide-nitride semiconductor materials

    NASA Technical Reports Server (NTRS)

    Major, Jo S. (Inventor); Welch, David F. (Inventor); Scifres, Donald R. (Inventor)

    2002-01-01

    Methods are disclosed for forming Group III-arsenide-nitride semiconductor materials. Group III elements are combined with group V elements, including at least nitrogen and arsenic, in concentrations chosen to lattice match commercially available crystalline substrates. Epitaxial growth of these III-V crystals results in direct bandgap materials, which can be used in applications such as light emitting diodes and lasers. Varying the concentrations of the elements in the III-V crystals varies the bandgaps, such that materials emitting light spanning the visible spectra, as well as mid-IR and near-UV emitters, can be created. Conversely, such material can be used to create devices that acquire light and convert the light to electricity, for applications such as full color photodetectors and solar energy collectors. The growth of the III-V crystals can be accomplished by growing thin layers of elements or compounds in sequences that result in the overall lattice match and bandgap desired.

  6. Characterization of advanced electronic materials

    SciTech Connect

    Arko, A.J.; Heffner, R.H.; Hundley, M.F.

    1997-08-01

    This is the final report of a three-year, Laboratory-Directed Research and Development (LDRD) project at the Los Alamos National Laboratory (LANL). Our goal has been to extend the Laboratory`s competency in nuclear and advanced materials by characterizing (measuring and interpreting) physical properties of advanced electronic materials and in this process to bridge the gap between materials synthesis and theoretical understanding. Attention has focused on discovering new physics by understanding the ground states of materials in which electronic correlations dominate their properties. Among several accomplishments, we have discovered and interpreted pressure-induced superconductivity in CeRh{sub 2}Si{sub 2}, boron content in UBe{sub 13-x}B{sub x} and the origin of small gaps in the spin and charge excitation spectra of Ce{sub 3}Bi{sub 4}Pt{sub 3}, and we provided seminal understanding of large magnetoresistive effects in La{sub 1-x}Ca{sub x}MnO{sub 3}. This work has established new research directions at LANL and elsewhere, involved numerous collaborators from throughout the world and attracted several postdoctoral fellows.

  7. Plasma Processing of Advanced Materials

    SciTech Connect

    Heberlein, Joachim, V.R.; Pfender, Emil; Kortshagen, Uwe

    2005-02-28

    Plasma Processing of Advanced Materials The project had the overall objective of improving our understanding of the influences of process parameters on the properties of advanced superhard materials. The focus was on high rate deposition processes using thermal plasmas and atmospheric pressure glow discharges, and the emphasis on superhard materials was chosen because of the potential impact of such materials on industrial energy use and on the environment. In addition, the development of suitable diagnostic techniques was pursued. The project was divided into four tasks: (1) Deposition of superhard boron containing films using a supersonic plasma jet reactor (SPJR), and the characterization of the deposition process. (2) Deposition of superhard nanocomposite films in the silicon-nitrogen-carbon system using the triple torch plasma reactor (TTPR), and the characterization of the deposition process. (3) Deposition of films consisting of carbon nanotubes using an atmospheric pressure glow discharge reactor. (4) Adapting the Thomson scattering method for characterization of atmospheric pressure non-uniform plasmas with steep spatial gradients and temporal fluctuations. This report summarizes the results.

  8. Characterization techniques for semiconductors and nanostructures: a review of recent advances

    NASA Astrophysics Data System (ADS)

    Acher, Olivier

    2015-01-01

    Optical spectroscopy techniques are widely used for the characterization of semiconductors and nanostructures. Confocal Raman microscopy is useful to retrieve chemical and molecular information at the ultimate submicrometer resolution of optical microscopy. Fast imaging capabilities, 3D confocal ability, and multiple excitation wavelengths, have increased the power of the technique while making it simpler to use for material scientists. Recently, the development of the Tip Enhanced Raman Spectroscopy (TERS) has opened the way to the use of Raman information at nanoscale, by combining the resolution of scanning probe microscopy and chemical selectivity of Raman spectroscopy. Significant advances have been reported in the field of profiling the atomic composition of multilayers, using the Glow Discharge Optical Emission Spectroscopy technique, including real-time determination of etched depth by interferometry. This allows the construction of precise atomic profiles of sophisticated multilayers with a few nm resolution. Ellipsometry is another widely used technique to determine the profile of multilayers, and recent development have provided enhanced spatial resolution useful for the investigation of patterned materials. In addition to the advances of the different characterization techniques, the capability to observe the same regions at micrometer scale at different stages of material elaboration, or with different instrument, is becoming a critical issue. Several advances have been made to allow precise re-localization and co-localization of observation with different complementary characterization techniques.

  9. Advanced aircraft engine materials trends

    NASA Technical Reports Server (NTRS)

    Dreshfield, R. L.; Gray, H. R.; Levine, S. R.; Signorelli, R.

    1981-01-01

    Recent activities of the Lewis Research Center are reviewed which are directed toward developing materials for rotating hot section components for aircraft gas turbines. Turbine blade materials activities are directed at increasing metal temperatures approximately 100 C compared to current directionally solidified alloys by use of oxide dispersion strengthening or tungsten alloy wire reinforcement of nickel or iron base superalloys. The application of thermal barrier coatings offers a promise of increasing gas temperatures an additional 100 C with current cooling technology. For turbine disk alloys, activities are directed toward reducing the cost of turbine disks by 50 percent through near net shape fabrication of prealloyed powders as well as towards improved performance. In addition, advanced alloy concepts and fabrication methods for dual alloy disks are being studied as having potential for improving the life of future high performance disks and reducing the amount of strategic materials required in these components.

  10. Methods of measurement for semiconductor materials, process control, and devices

    NASA Technical Reports Server (NTRS)

    Bullis, W. M. (Editor)

    1972-01-01

    Activities directed toward the development of methods of measurement for semiconductor materials, process control, and devices are described. Topics investigated include: measurements of transistor delay time; application of the infrared response technique to the study of radiation-damaged, lithium-drifted silicon detectors; and identification of a condition that minimizes wire flexure and reduces the failure rate of wire bonds in transistors and integrated circuits under slow thermal cycling conditions. Supplementary data concerning staff, standards committee activities, technical services, and publications are included as appendixes.

  11. Methods of measurement for semiconductor materials, process control, and devices

    NASA Technical Reports Server (NTRS)

    Bullis, W. M. (Editor)

    1971-01-01

    The development of methods of measurement for semiconductor materials, process control, and devices is discussed. The following subjects are also presented: (1) demonstration of the high sensitivity of the infrared response technique by the identification of gold in a germanium diode, (2) verification that transient thermal response is significantly more sensitive to the presence of voids in die attachment than steady-state thermal resistance, and (3) development of equipment for determining susceptibility of transistors to hot spot formation by the current-gain technique.

  12. System for characterizing semiconductor materials and photovoltaic devices through calibration

    DOEpatents

    Sopori, B.L.; Allen, L.C.; Marshall, C.; Murphy, R.C.; Marshall, T.

    1998-05-26

    A method and apparatus are disclosed for measuring characteristics of a piece of material, typically semiconductor materials including photovoltaic devices. The characteristics may include dislocation defect density, grain boundaries, reflectance, external LBIC, internal LBIC, and minority carrier diffusion length. The apparatus includes a light source, an integrating sphere, and a detector communicating with a computer. The measurement or calculation of the characteristics is calibrated to provide accurate, absolute values. The calibration is performed by substituting a standard sample for the piece of material, the sample having a known quantity of one or more of the relevant characteristics. The quantity measured by the system of the relevant characteristic is compared to the known quantity and a calibration constant is created thereby. 44 figs.

  13. System for characterizing semiconductor materials and photovoltaic devices through calibration

    DOEpatents

    Sopori, Bhushan L.; Allen, Larry C.; Marshall, Craig; Murphy, Robert C.; Marshall, Todd

    1998-01-01

    A method and apparatus for measuring characteristics of a piece of material, typically semiconductor materials including photovoltaic devices. The characteristics may include dislocation defect density, grain boundaries, reflectance, external LBIC, internal LBIC, and minority carrier diffusion length. The apparatus includes a light source, an integrating sphere, and a detector communicating with a computer. The measurement or calculation of the characteristics is calibrated to provide accurate, absolute values. The calibration is performed by substituting a standard sample for the piece of material, the sample having a known quantity of one or more of the relevant characteristics. The quantity measured by the system of the relevant characteristic is compared to the known quantity and a calibration constant is created thereby.

  14. Materials Science and Technology, Volume 4, Electronic Structure and Properties of Semiconductors

    NASA Astrophysics Data System (ADS)

    Schröter, Wolfgang

    1996-12-01

    This volume spans the field of semiconductor physics, with particular emphasis on concepts relevant to semiconductor technology. From the Contents: Lannoo: Band Theory Applied to Semiconductors. Ulbrich: Optical Properties and Charge Transport. Watkins: Intrinsic Point Defects in Semiconductors. Feichtinger: Deep Centers in Semiconductors. Gösele/Tan: Equilibria, Nonequilibria, Diffusion, and Precipitation. Alexander/Teichler: Dislocations. Thibault/Rouvière/Bourret: Grain Boundaries in Semiconductors. Ourmazd/Hull/Tung: Interfaces. Chang: The Hall Effect in Quantum Wires. Street/Winer: Material Properties of Hydrogenated Amorphous Silicon. Schröter/Seibt/Gilles: High-Temperature Properties of 3d Transition Elements in Silicon.

  15. Session: CSP Advanced Systems: Optical Materials (Presentation)

    SciTech Connect

    Kennedy, C.

    2008-04-01

    The Optical Materials project description is to characterize advanced reflector, perform accelerated and outdoor testing of commercial and experimental reflector materials, and provide industry support.

  16. Advances in mode-locked semiconductor disk lasers

    NASA Astrophysics Data System (ADS)

    Kornaszewski, Lukaz; Hempler, Nils; Hamilton, Craig J.; Maker, Gareth T.; Malcolm, Graeme P. A.

    2013-02-01

    NonLinear Microscopy techniques, such as Two-Photon Excited Fluorescence and Second Harmonic Generation provide advantages over conventional Confocal Laser Scanning Microscopy. A key element in a NonLinear Microscope is an ultrafast laser which produces short pulses with the high intensities needed for exciting nonlinear processes. Semiconductor Disk Lasers potentially offer an alternative to expensive Ti:Sapphire lasers. The reported 200MHz operation of a modelocked Semiconductor Disk laser is to our knowledge the lowest repetition rate as yet demonstrated.

  17. Advances in defect characterizations of semiconductors using positrons

    SciTech Connect

    Lynn, K.G.; Asoka-Kumar, P.

    1996-12-31

    Positron Annihilation Spectroscopy (PAS) is a sensitive probe for studying the electronic structure of defects in solids. The authors summarize recent developments in defect characterization of semiconductors using depth-resolved PAS. The progress achieved in extending the capabilities of the PAS method is also described.

  18. Surface passivation process of compound semiconductor material using UV photosulfidation

    DOEpatents

    Ashby, Carol I. H.

    1995-01-01

    A method for passivating compound semiconductor surfaces by photolytically disrupting molecular sulfur vapor with ultraviolet radiation to form reactive sulfur which then reacts with and passivates the surface of compound semiconductors.

  19. Advanced materials for space applications

    NASA Astrophysics Data System (ADS)

    Pater, Ruth H.; Curto, Paul A.

    2007-12-01

    Since NASA was created in 1958, over 6400 patents have been issued to the agency—nearly one in a thousand of all patents ever issued in the United States. A large number of these inventions have focused on new materials that have made space travel and exploration of the moon, Mars, and the outer planets possible. In the last few years, the materials developed by NASA Langley Research Center embody breakthroughs in performance and properties that will enable great achievements in space. The examples discussed below offer significant advantages for use in small satellites, i.e., those with payloads under a metric ton. These include patented products such as LaRC SI, LaRC RP 46, LaRC RP 50, PETI-5, TEEK, PETI-330, LaRC CP, TOR-LM and LaRC LCR (patent pending). These and other new advances in nanotechnology engineering, self-assembling nanostructures and multifunctional aerospace materials are presented and discussed below, and applications with significant technological and commercial advantages are proposed.

  20. Advanced Materials for Space Applications

    NASA Technical Reports Server (NTRS)

    Pater, Ruth H.; Curto, Paul A.

    2005-01-01

    Since NASA was created in 1958, over 6400 patents have been issued to the agency--nearly one in a thousand of all patents ever issued in the United States. A large number of these inventions have focused on new materials that have made space travel and exploration of the moon, Mars, and the outer planets possible. In the last few years, the materials developed by NASA Langley Research Center embody breakthroughs in performance and properties that will enable great achievements in space. The examples discussed below offer significant advantages for use in small satellites, i.e., those with payloads under a metric ton. These include patented products such as LaRC SI, LaRC RP 46, LaRC RP 50, PETI-5, TEEK, PETI-330, LaRC CP, TOR-LM and LaRC LCR (patent pending). These and other new advances in nanotechnology engineering, self-assembling nanostructures and multifunctional aerospace materials are presented and discussed below, and applications with significant technological and commercial advantages are proposed.

  1. Materials Advance Chemical Propulsion Technology

    NASA Technical Reports Server (NTRS)

    2012-01-01

    In the future, the Planetary Science Division of NASA's Science Mission Directorate hopes to use better-performing and lower-cost propulsion systems to send rovers, probes, and observers to places like Mars, Jupiter, and Saturn. For such purposes, a new propulsion technology called the Advanced Materials Bipropellant Rocket (AMBR) was developed under NASA's In-Space Propulsion Technology (ISPT) project, located at Glenn Research Center. As an advanced chemical propulsion system, AMBR uses nitrogen tetroxide oxidizer and hydrazine fuel to propel a spacecraft. Based on current research and development efforts, the technology shows great promise for increasing engine operation and engine lifespan, as well as lowering manufacturing costs. In developing AMBR, ISPT has several goals: to decrease the time it takes for a spacecraft to travel to its destination, reduce the cost of making the propulsion system, and lessen the weight of the propulsion system. If goals like these are met, it could result in greater capabilities for in-space science investigations. For example, if the amount (and weight) of propellant required on a spacecraft is reduced, more scientific instruments (and weight) could be added to the spacecraft. To achieve AMBR s maximum potential performance, the engine needed to be capable of operating at extremely high temperatures and pressure. To this end, ISPT required engine chambers made of iridium-coated rhenium (strong, high-temperature metallic elements) that allowed operation at temperatures close to 4,000 F. In addition, ISPT needed an advanced manufacturing technique for better coating methods to increase the strength of the engine chamber without increasing the costs of fabricating the chamber.

  2. Apparatus for measuring minority carrier lifetimes in semiconductor materials

    DOEpatents

    Ahrenkiel, Richard K.

    1999-01-01

    An apparatus for determining the minority carrier lifetime of a semiconductor sample includes a positioner for moving the sample relative to a coil. The coil is connected to a bridge circuit such that the impedance of one arm of the bridge circuit is varied as sample is positioned relative to the coil. The sample is positioned relative to the coil such that any change in the photoconductance of the sample created by illumination of the sample creates a linearly related change in the input impedance of the bridge circuit. In addition, the apparatus is calibrated to work at a fixed frequency so that the apparatus maintains a consistently high sensitivity and high linearly for samples of different sizes, shapes, and material properties. When a light source illuminates the sample, the impedance of the bridge circuit is altered as excess carriers are generated in the sample, thereby producing a measurable signal indicative of the minority carrier lifetimes or recombination rates of the sample.

  3. Methods of use of semiconductor nanocrystal probes for treating a material

    SciTech Connect

    Weiss, Shimon; Bruchez, Marcel; Alivisatos, Paul

    2007-04-27

    A semiconductor nanocrystal compound and probe are described. The compound is capable of linking to one or more affinity molecules. The compound comprises (1) one or more semiconductor nanocrystals capable of, in response to exposure to a first energy, providing a second energy, and (2) one or more linking agents, having a first portion linked to one or more semiconductor nanocrystals and a second portion capable of linking to one or more affinity molecules. One or more semiconductor nanocrystal compounds are linked to one or more affinity molecules to form a semiconductor nanocrystal probe capable of bonding with one or more detectable substances in a material being analyzed, and capable of, in response to exposure to a first energy, providing a second energy. Also described are processes for respectively: making the semiconductor nanocrystal compound; making the semiconductor nanocrystal probe; and treating materials with the probe.

  4. Semiconductor research capabilities at the Lawrence Berkeley Laboratory

    SciTech Connect

    Not Available

    1987-02-01

    This document discusses semiconductor research capabilities (advanced materials, processing, packaging) and national user facilities (electron microscopy, heavy-ion accelerators, advanced light source). (DLC)

  5. III-V aresenide-nitride semiconductor materials and devices

    NASA Technical Reports Server (NTRS)

    Major, Jo S. (Inventor); Welch, David F. (Inventor); Scifres, Donald R. (Inventor)

    1997-01-01

    III-V arsenide-nitride semiconductor crystals, methods for producing such crystals and devices employing such crystals. Group III elements are combined with group V elements, including at least nitrogen and arsenic, in concentrations chosen to lattice match commercially available crystalline substrates. Epitaxial growth of these III-V crystals results in direct bandgap materials, which can be used in applications such as light emitting diodes and lasers. Varying the concentrations of the elements in the III-V crystals varies the bandgaps, such that materials emitting light spanning the visible spectra, as well as mid-IR and near-UV emitters, can be created. Conversely, such material can be used to create devices that acquire light and convert the light to electricity, for applications such as full color photodetectors and solar energy collectors. The growth of the III-V crystals can be accomplished by growing thin layers of elements or compounds in sequences that result in the overall lattice match and bandgap desired.

  6. Advanced diffusion studies with isotopically controlled materials

    SciTech Connect

    Bracht, Hartmut A.; Silvestri, Hughes H.; Haller, Eugene E.

    2004-11-14

    The use of enriched stable isotopes combined with modern epitaxial deposition and depth profiling techniques enables the preparation of material heterostructures, highly appropriate for self- and foreign-atom diffusion experiments. Over the past decade we have performed diffusion studies with isotopically enriched elemental and compound semiconductors. In the present paper we highlight our recent results and demonstrate that the use of isotopically enriched materials ushered in a new era in the study of diffusion in solids which yields greater insight into the properties of native defects and their roles in diffusion. Our approach of studying atomic diffusion is not limited to semiconductors and can be applied also to other material systems. Current areas of our research concern the diffusion in the silicon-germanium alloys and glassy materials such as silicon dioxide and ion conducting silicate glasses.

  7. Advanced materials: Information and analysis needs

    SciTech Connect

    Curlee, T.R.; Das, S.; Lee, R.; Trumble, D.

    1990-09-01

    This report presents the findings of a study to identify the types of information and analysis that are needed for advanced materials. The project was sponsored by the US Bureau of Mines (BOM). It includes a conceptual description of information needs for advanced materials and the development and implementation of a questionnaire on the same subject. This report identifies twelve fundamental differences between advanced and traditional materials and discusses the implications of these differences for data and analysis needs. Advanced and traditional materials differ significantly in terms of physical and chemical properties. Advanced material properties can be customized more easily. The production of advanced materials may differ from traditional materials in terms of inputs, the importance of by-products, the importance of different processing steps (especially fabrication), and scale economies. The potential for change in advanced materials characteristics and markets is greater and is derived from the marriage of radically different materials and processes. In addition to the conceptual study, a questionnaire was developed and implemented to assess the opinions of people who are likely users of BOM information on advanced materials. The results of the questionnaire, which was sent to about 1000 people, generally confirm the propositions set forth in the conceptual part of the study. The results also provide data on the categories of advanced materials and the types of information that are of greatest interest to potential users. 32 refs., 1 fig., 12 tabs.

  8. Novel diluted magnetic semiconductor materials based on zinc oxide

    NASA Astrophysics Data System (ADS)

    Chakraborti, Deepayan

    The primary aim of this work was to develop a ZnO based diluted magnetic semiconductor (DMS) materials system which displays ferromagnetism above room temperature and to understand the origin of long-range ferromagnetic ordering in these systems. Recent developments in the field of spintronics (spin based electronics) have led to an extensive search for materials in which semiconducting properties can be integrated with magnetic properties to realize the objective of successful fabrication of spin-based devices. For these devices we require a high efficiency of spin current injection at room temperature. Diluted magnetic semiconductors (DMS) can serve this role, but they should not only display room temperature ferromagnetism (RTFM) but also be capable of generating spin polarized carriers. Transition metal doped ZnO has proved to be a potential candidate as a DMS showing RTFM. The origin of ferromagnetic ordering in ZnO is still under debate. However, the presence of magnetic secondary phases, composition fluctuations and nanoclusters could also explain the observation of ferromagnetism in the DMS samples. This encouraged us to investigate Cu-doped(+ spin in the 2+ valence state) ZnO system as a probable candidate exhibiting RTFM because neither metallic Cu nor its oxides (Cu2O or CuO) are ferromagnetic. The role of defects and free carriers on the ferromagnetic ordering of Cu-doped ZnO thin films was studied to ascertain the origin of ferromagnetism in this system. A novel non-equilibrium Pulsed Laser Deposition technique has been used to grow high quality epitaxial thin films of Cu:ZnO and (Co,Cu):ZnO on c-plane Sapphire by domain matching epitxay. Both the systems showed ferromagnetic ordering above 300K but Cu ions showed a much stronger ferromagnetic ordering than Co, especially at low concentrations (1-2%) of Cu where we realized near 100% polarization. But, the incorporation of Cu resulted in a 2-order of magnitude rise in the resistivity from 10-1 to 101

  9. Surface chemistry relevant to material processing for semiconductor devices

    NASA Astrophysics Data System (ADS)

    Okada, Lynne Aiko

    Metal-oxide-semiconductor (MOS) structures are the core of many modern integrated circuit (IC) devices. Each material utilized in the different regions of the device has its own unique chemistry. Silicon is the base semiconductor material used in the majority of these devices. With IC device complexity increasing and device dimensions decreasing, understanding material interactions and processing becomes increasingly critical. Hsb2 desorption is the rate-limiting step in silicon growth using silane under low temperature conditions. Activation energies for Hsb2 desorption measured during Si chemical vapor deposition (CVD) versus single-crystal studies are found to be significantly lower. It has been proposed that defect sites on the silicon surface could explain the observed differences. Isothermal Hsb2 desorption studies using laser induced thermal desorption (LITD) techniques have addressed this issue. The growth of low temperature oxides is another relevant issue for fabrication of IC devices. Recent studies using 1,4-disilabutane (DSB) (SiHsb3CHsb2CHsb2SiHsb3) at 100sp°C in ambient Osb2 displayed the successful low temperature growth of silicon dioxide (SiOsb2). However, these studies provided no information about the deposition mechanism. We performed LITD and Fourier transform infrared (FTIR) studies on single-crystal and porous silicon surfaces to examine the adsorption, decomposition, and desorption processes to determine the deposition mechanism. Titanium nitride (TiN) diffusion barriers are necessary in modern metallization structures. Controlled deposition using titanium tetrachloride (TiClsb4) and ammonia (NHsb3) has been demonstrated using atomic layered processing (ALP) techniques. We intended to study the sequential deposition method by monitoring the surface intermediates using LITD techniques. However, formation of a Cl impurity source, ammonium chloride (NHsb4sp+Clsp-), was observed, thereby, limiting our ability for effective studies. Tetrakis

  10. Solution-processed Optoelectronic Devices from Colloidal Inorganic Semiconductor Materials

    NASA Astrophysics Data System (ADS)

    Tchieu, Andrew A.

    This dissertation contains design, synthesis, fabrication and testing of optoelectronic devices which are composed of colloidal inorganic semiconductor materials and fabricated by potentially low-cost solution-processing methods. The first part of this dissertation demonstrates a novel fabrication method where colloidal quantum dots (QDs) are self-assembled layer-by-layer into a thin film structure through electrostatic interaction. This process allows precise control of QD thin film thickness by self-assembly and can in principle be applied to a wide range of substrates. Using such QD thin films, photoconductor photodetectors and metal-intrinsic-metal photodiodes have been demonstrated. In the second part of this dissertation, heavy-metal-free colloidal Si materials are synthesized by electrochemical etching Si wafers, followed by surface modification and ultra-sonication for dispersion of Si nano- and/or micro-particles in various solvents. Demonstrated applications include RGB photoluminescent Si phosphors, scattering-enhanced Si nano-/micro-particle composite photodetectors and hybrid Si QD-organic light-emitting-diodes (LEDs).

  11. Advanced Reflector and Absorber Materials (Fact Sheet)

    SciTech Connect

    Not Available

    2010-08-01

    Fact sheet describing NREL CSP Program capabilities in the area of advanced reflector and absorber materials: evaluating performance, determining degradation rates and lifetime, and developing new coatings.

  12. Advanced Photon Source Upgrade Project - Materials

    ScienceCinema

    Gibbson, Murray;

    2013-04-19

    An upgrade to Advanced Photon Source announced by DOE - http://go.usa.gov/ivZ -- will help scientists break through bottlenecks in materials design in order to develop materials with desirable functions.

  13. Advanced Photon Source Upgrade Project - Materials

    SciTech Connect

    Gibbson, Murray

    2011-01-01

    An upgrade to Advanced Photon Source announced by DOE - http://go.usa.gov/ivZ -- will help scientists break through bottlenecks in materials design in order to develop materials with desirable functions.

  14. 75 FR 81643 - In the Matter of Certain Semiconductor Products Made by Advanced Lithography Techniques and...

    Federal Register 2010, 2011, 2012, 2013, 2014

    2010-12-28

    ... certain claims of U.S. Patent No. 6,042,998. 75 FR. 44,015 (July 27, 2010). The complaint named two... COMMISSION In the Matter of Certain Semiconductor Products Made by Advanced Lithography Techniques and... for ] importation, and sale within the United States after importation of certain...

  15. Apparatus for measuring minority carrier lifetimes in semiconductor materials

    DOEpatents

    Ahrenkiel, R.K.

    1999-07-27

    An apparatus for determining the minority carrier lifetime of a semiconductor sample includes a positioner for moving the sample relative to a coil. The coil is connected to a bridge circuit such that the impedance of one arm of the bridge circuit is varied as sample is positioned relative to the coil. The sample is positioned relative to the coil such that any change in the photoconductance of the sample created by illumination of the sample creates a linearly related change in the input impedance of the bridge circuit. In addition, the apparatus is calibrated to work at a fixed frequency so that the apparatus maintains a consistently high sensitivity and high linearly for samples of different sizes, shapes, and material properties. When a light source illuminates the sample, the impedance of the bridge circuit is altered as excess carriers are generated in the sample, thereby producing a measurable signal indicative of the minority carrier lifetimes or recombination rates of the sample. 17 figs.

  16. Investigation of the optical properties of ordered semiconductor materials

    NASA Astrophysics Data System (ADS)

    McCrae, Jack E., Jr.

    1997-11-01

    Optical Studies have been conducted upon CdGeAs2 and ZnGeP2, two of the most promising semiconductors being developed for mid-infrared non-linear optics applications. These experiments included photoluminescence (PL) studies of both compounds as well as photoreflectance (PR) measurements upon CdGeAs2. In addition, Hall effect measurements were carried out upon CdGeAs2, to aid in interpretation of the optical data. PL was measured as a function of laser power, sample temperature, and crystal orientation for CdGeAs2. One broad weak peak near 0.38 eV, and another somewhat narrower and often far brighter peak near 0.57 eV were found by low temperature (4 K) PL measurements. Strongly polarized PL was observed with the E field of the PL parallel to the material's c-axis. A polarization ratio as high as 6:1 was observed. PL on ZnGeP2 in the mid-IR revealed a previously unreported PL peak near 0.35 eV. PR measurements on CdCeAs2 allowed the estimation of the bandgap as a function of temperature. The low temperature bandgap proved to be lower than that reported for electroreflectance measurements on other samples of this compound. Hall effect measurements on CdGeAs2 reveals the dominant acceptor level lies about 120 meV above the valence band.

  17. Advances in photonics thermal management and packaging materials

    NASA Astrophysics Data System (ADS)

    Zweben, Carl

    2008-02-01

    Heat dissipation, thermal stresses, and cost are key packaging design issues for virtually all semiconductors, including photonic applications such as diode lasers, light-emitting diodes (LEDs), solid state lighting, photovoltaics, displays, projectors, detectors, sensors and laser weapons. Heat dissipation and thermal stresses affect performance and reliability. Copper, aluminum and conventional polymeric printed circuit boards (PCBs) have high coefficients of thermal expansion, which can cause high thermal stresses. Most traditional low-coefficient-of-thermal-expansion (CTE) materials like tungsten/copper, which date from the mid 20 th century, have thermal conductivities that are no better than those of aluminum alloys, about 200 W/m-K. There are an increasing number of low-CTE materials with thermal conductivities ranging between that of copper (400 W/m-K) and 1700 W/m-K, and many other new low-CTE materials with lower thermal conductivities. An important benefit of low-CTE materials is that they allow use of hard solders. Some advanced materials are low cost. Others have the potential to be low cost in high-volume production. High-thermal-conductivity materials enable higher power levels, potentially reducing the number of required devices. Advanced thermal materials can constrain PCB CTE and greatly increase thermal conductivity. This paper reviews traditional packaging materials and advanced thermal management materials. The latter provide the packaging engineer with a greater range of options than in the past. Topics include properties, status, applications, cost, using advanced materials to fix manufacturing problems, and future directions, including composites reinforced with carbon nanotubes and other thermally conductive materials.

  18. Application of advanced materials to rotating machines

    NASA Technical Reports Server (NTRS)

    Triner, J. E.

    1983-01-01

    In discussing the application of advanced materials to rotating machinery, the following topics are covered: the torque speed characteristics of ac and dc machines, motor and transformer losses, the factors affecting core loss in motors, advanced magnetic materials and conductors, and design tradeoffs for samarium cobalt motors.

  19. Video Fact Sheets: Everyday Advanced Materials

    SciTech Connect

    2015-10-06

    What are Advanced Materials? Ames Laboratory is behind some of the best advanced materials out there. Some of those include: Lead-Free Solder, Photonic Band-Gap Crystals, Terfenol-D, Aluminum-Calcium Power Cable and Nano Particles. Some of these are in products we use every day.

  20. EDITORIAL: Semiconductor nanotechnology: novel materials and devices for electronics, photonics and renewable energy applications Semiconductor nanotechnology: novel materials and devices for electronics, photonics and renewable energy applications

    NASA Astrophysics Data System (ADS)

    Goodnick, Stephen; Korkin, Anatoli; Krstic, Predrag; Mascher, Peter; Preston, John; Zaslavsky, Alex

    2010-04-01

    Electronic and photonic information technology and renewable energy alternatives, such as solar energy, fuel cells and batteries, have now reached an advanced stage in their development. Cost-effective improvements to current technological approaches have made great progress, but certain challenges remain. As feature sizes of the latest generations of electronic devices are approaching atomic dimensions, circuit speeds are now being limited by interconnect bottlenecks. This has prompted innovations such as the introduction of new materials into microelectronics manufacturing at an unprecedented rate and alternative technologies to silicon CMOS architectures. Despite the environmental impact of conventional fossil fuel consumption, the low cost of these energy sources has been a long-standing economic barrier to the development of alternative and more efficient renewable energy sources, fuel cells and batteries. In the face of mounting environmental concerns, interest in such alternative energy sources has grown. It is now widely accepted that nanotechnology offers potential solutions for securing future progress in information and energy technologies. The Canadian Semiconductor Technology Conference (CSTC) forum was established 25 years ago in Ottawa as an important symbol of the intrinsic strength of the Canadian semiconductor research and development community, and the Canadian semiconductor industry as a whole. In 2007, the 13th CSTC was held in Montreal, moving for the first time outside the national capital region. The first three meetings in the series of 'Nano and Giga Challenges in Electronics and Photonics'— NGCM2002 in Moscow, NGCM2004 in Krakow, and NGC2007 in Phoenix— were focused on interdisciplinary research from the fundamentals of materials science to the development of new system architectures. In 2009 NGC2009 and the 14th Canadian Semiconductor Technology Conference (CSTC2009) were held as a joint event, hosted by McMaster University (10

  1. Advanced numerical methods and software approaches for semiconductor device simulation

    SciTech Connect

    CAREY,GRAHAM F.; PARDHANANI,A.L.; BOVA,STEVEN W.

    2000-03-23

    In this article the authors concisely present several modern strategies that are applicable to drift-dominated carrier transport in higher-order deterministic models such as the drift-diffusion, hydrodynamic, and quantum hydrodynamic systems. The approaches include extensions of upwind and artificial dissipation schemes, generalization of the traditional Scharfetter-Gummel approach, Petrov-Galerkin and streamline-upwind Petrov Galerkin (SUPG), entropy variables, transformations, least-squares mixed methods and other stabilized Galerkin schemes such as Galerkin least squares and discontinuous Galerkin schemes. The treatment is representative rather than an exhaustive review and several schemes are mentioned only briefly with appropriate reference to the literature. Some of the methods have been applied to the semiconductor device problem while others are still in the early stages of development for this class of applications. They have included numerical examples from the recent research tests with some of the methods. A second aspect of the work deals with algorithms that employ unstructured grids in conjunction with adaptive refinement strategies. The full benefits of such approaches have not yet been developed in this application area and they emphasize the need for further work on analysis, data structures and software to support adaptivity. Finally, they briefly consider some aspects of software frameworks. These include dial-an-operator approaches such as that used in the industrial simulator PROPHET, and object-oriented software support such as those in the SANDIA National Laboratory framework SIERRA.

  2. Advanced Numerical Methods and Software Approaches for Semiconductor Device Simulation

    DOE PAGESBeta

    Carey, Graham F.; Pardhanani, A. L.; Bova, S. W.

    2000-01-01

    In this article we concisely present several modern strategies that are applicable to driftdominated carrier transport in higher-order deterministic models such as the driftdiffusion, hydrodynamic, and quantum hydrodynamic systems. The approaches include extensions of “upwind” and artificial dissipation schemes, generalization of the traditional Scharfetter – Gummel approach, Petrov – Galerkin and streamline-upwind Petrov Galerkin (SUPG), “entropy” variables, transformations, least-squares mixed methods and other stabilized Galerkin schemes such as Galerkin least squares and discontinuous Galerkin schemes. The treatment is representative rather than an exhaustive review and several schemes are mentioned only briefly with appropriate reference to the literature. Some of themore » methods have been applied to the semiconductor device problem while others are still in the early stages of development for this class of applications. We have included numerical examples from our recent research tests with some of the methods. A second aspect of the work deals with algorithms that employ unstructured grids in conjunction with adaptive refinement strategies. The full benefits of such approaches have not yet been developed in this application area and we emphasize the need for further work on analysis, data structures and software to support adaptivity. Finally, we briefly consider some aspects of software frameworks. These include dial-an-operator approaches such as that used in the industrial simulator PROPHET, and object-oriented software support such as those in the SANDIA National Laboratory framework SIERRA.« less

  3. Development of Specialized Advanced Materials Curriculum.

    ERIC Educational Resources Information Center

    Malmgren, Thomas; And Others

    This course is intended to give students a comprehensive experience in current and future manufacturing materials and processes. It familiarizes students with: (1) base of composite materials; (2) composites--a very light, strong material used in spacecraft and stealth aircraft; (3) laminates; (4) advanced materials--especially aluminum alloys;…

  4. Recent developments in the search for new semiconductor gamma-ray detector materials

    NASA Astrophysics Data System (ADS)

    Lund, J. C.; Olschner, F.; Shah, K. S.; Squillante, M. R.

    1992-12-01

    The requirements of a semiconductor material intended to operate in a gamma-ray detector at room temperatures are discussed, and the status of the search for alternative materials is reviewed. The important material characteristics of a semiconductor gamma-ray detector material are high average atomic number, material's uniformity, resistivity, and electron and holes transport properties. Materials under investigation include GaAs, InP, TlBr, and PbI2. Theoretically, it is considered to be feasible to built a large volume semiconductor gamma-ray detector capable of good energy resolution at room temperature. But it is very unlikely that a semiconductor detector with germanium-like performance will be available in the next five years.

  5. Advanced excimer laser technologies enable green semiconductor manufacturing

    NASA Astrophysics Data System (ADS)

    Fukuda, Hitomi; Yoo, Youngsun; Minegishi, Yuji; Hisanaga, Naoto; Enami, Tatsuo

    2014-03-01

    "Green" has fast become an important and pervasive topic throughout many industries worldwide. Many companies, especially in the manufacturing industries, have taken steps to integrate green initiatives into their high-level corporate strategies. Governments have also been active in implementing various initiatives designed to increase corporate responsibility and accountability towards environmental issues. In the semiconductor manufacturing industry, there are growing concerns over future environmental impact as enormous fabs expand and new generation of equipments become larger and more powerful. To address these concerns, Gigaphoton has implemented various green initiatives for many years under the EcoPhoton™ program. The objective of this program is to drive innovations in technology and services that enable manufacturers to significantly reduce both the financial and environmental "green cost" of laser operations in high-volume manufacturing environment (HVM) - primarily focusing on electricity, gas and heat management costs. One example of such innovation is Gigaphoton's Injection-Lock system, which reduces electricity and gas utilization costs of the laser by up to 50%. Furthermore, to support the industry's transition from 300mm to the next generation 450mm wafers, technologies are being developed to create lasers that offer double the output power from 60W to 120W, but reducing electricity and gas consumption by another 50%. This means that the efficiency of lasers can be improve by up to 4 times in 450mm wafer production environments. Other future innovations include the introduction of totally Heliumfree Excimer lasers that utilize Nitrogen gas as its replacement for optical module purging. This paper discusses these and other innovations by Gigaphoton to enable green manufacturing.

  6. Optimization of segmented alignment marks for advanced semiconductor fabrication processes

    NASA Astrophysics Data System (ADS)

    Wu, Qiang; Lu, Zhijian G.; Williams, Gary; Zach, Franz X.; Liegl, Bernhard

    2001-08-01

    The continued downscaling of semiconductor fabrication ground rule has imposed increasingly tighter overlay tolerances, which becomes very challenging at the 100 nm lithographic node. Such tight tolerances will require very high performance in alignment. Past experiences indicate that good alignment depends largely on alignment signal quality, which, however, can be strongly affected by chip design and various fabrication processes. Under some extreme circumstances, they can even be reduced to the non- usable limit. Therefore, a systematic understanding of alignment marks and a method to predict alignment performance based on mark design are necessary. Motivated by this, we have performed a detailed study of bright field segmented alignment marks that are used in current state-of- the-art fabrication processes. We find that alignment marks at different lithographic levels can be organized into four basic categories: trench mark, metal mark, damascene mark, and combo mark. The basic principles of these four types of marks turn out to be so similar that they can be characterized within the theoretical framework of a simple model based on optical gratings. An analytic expression has been developed for such model and it has been tested using computer simulation with the rigorous time-domain finite- difference (TD-FD) algorithm TEMPEST. Consistent results have been obtained; indicating that mark signal can be significantly improved through the optimization of mark lateral dimensions, such as segment pitch and segment width. We have also compared simulation studies against experimental data for alignment marks at one typical lithographic level and a good agreement is found.

  7. Recent Advances in Superhard Materials

    NASA Astrophysics Data System (ADS)

    Zhao, Zhisheng; Xu, Bo; Tian, Yongjun

    2016-07-01

    In superhard materials research, two topics are of central focus. One is to understand hardness microscopically and to establish hardness models with atomic parameters, which can be used to guide the design or prediction of novel superhard crystals. The other is to synthesize superhard materials with enhanced comprehensive performance (i.e., hardness, fracture toughness, and thermal stability), with the ambition of achieving materials harder than natural diamond. In this review, we present recent developments in both areas. The microscopic hardness models of covalent single crystals are introduced and further generalized to polycrystalline materials. Current research progress in novel superhard materials and nanostructuring approaches for high-performance superhard materials are discussed. We also clarify a long-standing controversy about the criterion for performing a reliable indentation hardness measurement.

  8. Synthesis of Advanced Energetic Materials

    NASA Astrophysics Data System (ADS)

    Wilson, Rebecca

    2015-06-01

    For a given energetic material, performance is a combination of the rate of energy release and total energy content. Organic and metal-based energetics, respectively, represent the limiting cases, exhibiting strength in one area and weakness in the other. Many organic energetic materials readily detonate, but increasing total energy content using only known energetic functional groups is difficult. In contrast, combustion of aluminum metal can release more than three times the energy available from the same mass of organic explosive, but the rate of energy release is slow relative to detonation, and combustion is often incomplete. Current research in our department seeks to improve both the total energy content of organic explosives and the rate of combustion of aluminum-based materials. Novel arrangements of atoms within energetic molecules, along with new assembly methods for materials, are employed to improve both aspects of performance. In the case of organic energetic materials, novel functional groups can yield compounds with higher density, and therefore greater power, relative to conventional, nitro group-based materials. For aluminum-based materials, progressively smaller particles undergo more rapid and complete combustion. To prevent surface oxidation, one approach is to shield a core of low-valent aluminum atoms with a shell of ligands, while another is to develop aluminum-based fuels that are inherently air-stable. These methods will be discussed in the context of novel energetic materials synthesis. Research Department, NSWC IHEODTD.

  9. Micromechanical modeling of advanced materials

    SciTech Connect

    Silling, S.A.; Taylor, P.A.; Wise, J.L.; Furnish, M.D.

    1994-04-01

    Funded as a laboratory-directed research and development (LDRD) project, the work reported here focuses on the development of a computational methodology to determine the dynamic response of heterogeneous solids on the basis of their composition and microstructural morphology. Using the solid dynamics wavecode CTH, material response is simulated on a scale sufficiently fine to explicitly represent the material`s microstructure. Conducting {open_quotes}numerical experiments{close_quotes} on this scale, the authors explore the influence that the microstructure exerts on the material`s overall response. These results are used in the development of constitutive models that take into account the effects of microstructure without explicit representation of its features. Applying this methodology to a glass-reinforced plastic (GRP) composite, the authors examined the influence of various aspects of the composite`s microstructure on its response in a loading regime typical of impact and penetration. As a prerequisite to the microscale modeling effort, they conducted extensive materials testing on the constituents, S-2 glass and epoxy resin (UF-3283), obtaining the first Hugoniot and spall data for these materials. The results of this work are used in the development of constitutive models for GRP materials in transient-dynamics computer wavecodes.

  10. Advanced Materials for Automotive Application

    NASA Astrophysics Data System (ADS)

    Tisza, M.

    2013-12-01

    In this paper some recent material developments will be overviewed mainly from the point of view of automotive industry. In car industry, metal forming is one of the most important manufacturing processes imposing severe restrictions on materials; these are often contradictory requirements, e.g. high strength simultaneously with good formability, etc. Due to these challenges and the ever increasing demand new material classes have been developed; however, the more and more wide application of high strength materials meeting the requirements stated by the mass reduction lead to increasing difficulties concerning the formability which requires significant technological developments as well. In this paper, the recent materials developments will be overviewed from the point of view of the automotive industry.

  11. Shock-loading response of advanced materials

    NASA Astrophysics Data System (ADS)

    Gray, G. T., III

    1993-05-01

    Advanced materials, such as composites (metal, ceramic, or polymer-matrix), intermetallics, foams (metallic or polymeric-based), laminated materials, and nanostructured materials are receiving increasing attention because their properties can be custom tailored specific applications. The high-rate/impact response of advanced materials is relevant to a broad range of service environments such as the crashworthiness of civilian/military vehicles, foreign-object-damage in aerospace, and light-weight armor. Increased utilization of these material classes under dynamic loading conditions requires an understanding of the relationship between high-rate/shock-wave response as a function of microstructure if we are to develop models to predict material behavior. In this paper, the issues relevant to defect generation, storage, and the underlying physical basis needed in predictive models for several advanced materials are reviewed.

  12. Advanced High Efficiency Thermoelectric Materials

    NASA Astrophysics Data System (ADS)

    Flanders, Laffite; Cummer, Keith R.; Feinsinger, Joseph; Heshmatpour, Ben

    2006-01-01

    The research effort at Teledyne Energy Systems, Inc., which has been aimed at improving the performance of the currently used thermoelectric (TE) materials has identified a number of improved formulations for the standard n-type PbTe and p-type TAGS. The preliminary test results appear to indicate nearly 50% higher thermal to electric energy conversion efficiency for these new PbTe and TAGS formulations. Effort is continuing to confirm the preliminary test results and validate the materials fabrication processes. Multiple batches of the newly developed TE materials will be prepared and characterized for thermoelectric properties. The selected TE materials will be subjected to degradation analysis and life modeling to determine any deterioration in the TE properties as a function of time and operating temperatures. This effort also includes measurement of sublimation rates as a function of temperature for the selected materials. The results for the initial sublimation tests are quite encouraging and show appreciable reduction in sublimation rate for TAGS 80 and the modified TAGS alloys. Future effort will include determination of effect of sublimation on TE characteristics for the selected TE materials. Microanalysis technique such as optical and electron microscopy, XRD and EDSX will be used to determine the microstructural characteristics of the TE materials at various stages of their simulated operating life. Based on the results of these studies the n-type and p-type materials with the highest power conversion efficiency and the lowest degradation rate will be selected for use in fabrication of future thermoelectric devices.

  13. Advanced Electrical Materials and Components Development: An Update

    NASA Technical Reports Server (NTRS)

    Schwarze, Gene E.

    2005-01-01

    The primary means to develop advanced electrical components is to develop new and improved materials for magnetic components (transformers, inductors, etc.), capacitors, and semiconductor switches and diodes. This paper will give an update of the Advanced Power Electronics and Components Technology being developed by the NASA Glenn Research Center for use in future Power Management and Distribution subsystems used in space power systems for spacecraft and lunar and planetary surface power. The initial description and status of this technology program was presented two years ago at the First International Energy Conversion Engineering Conference held at Portsmouth, Virginia, August 2003. The present paper will give a brief background of the previous work reported and a summary of research performed the past several years on soft magnetic materials characterization, dielectric materials and capacitor developments, high quality silicon carbide atomically smooth substrates, and SiC static and dynamic device characterization under elevated temperature conditions. The rationale for and the benefits of developing advanced electrical materials and components for the PMAD subsystem and also for the total power system will also be briefly discussed.

  14. Compositions of doped, co-doped and tri-doped semiconductor materials

    DOEpatents

    Lynn, Kelvin; Jones, Kelly; Ciampi, Guido

    2011-12-06

    Semiconductor materials suitable for being used in radiation detectors are disclosed. A particular example of the semiconductor materials includes tellurium, cadmium, and zinc. Tellurium is in molar excess of cadmium and zinc. The example also includes aluminum having a concentration of about 10 to about 20,000 atomic parts per billion and erbium having a concentration of at least 10,000 atomic parts per billion.

  15. Nuclear material investigations by advanced analytical techniques

    NASA Astrophysics Data System (ADS)

    Degueldre, C.; Kuri, G.; Martin, M.; Froideval, A.; Cammelli, S.; Orlov, A.; Bertsch, J.; Pouchon, M. A.

    2010-10-01

    Advanced analytical techniques have been used to characterize nuclear materials at the Paul Scherrer Institute during the last decade. The analysed materials ranged from reactor pressure vessel (RPV) steels, Zircaloy claddings to fuel samples. The processes studied included copper cluster build up in RPV steels, corrosion, mechanical and irradiation damage behaviour of PWR and BWR cladding materials as well as fuel defect development. The used advanced techniques included muon spin resonance spectroscopy for zirconium alloy defect characterization while fuel element materials were analysed by techniques derived from neutron and X-ray scattering and absorption spectroscopy.

  16. Characterization of MBE-grown Semiconductor Materials for Photovoltaic Applications

    NASA Astrophysics Data System (ADS)

    Tang, Dinghao

    The research described in this dissertation involved the use of transmission electron microscopy (TEM) to characterize II-VI and III-V compound semiconductor quantum dots (QDs) and dilute-nitride alloys grown by molecular beam epitaxy (MBE) and intended for photovoltaic applications. The morphology of CdTe QDs prepared by the post-annealing MBE method were characterized by various microscopy techniques including high-resolution transmission electron microscopy (HR-TEM), and high-angle annular-dark-field scanning transmission electron microscopy (HAADF-STEM). Extensive observations revealed that the of QD shapes were not well-defined, and the QD size and spatial distribution were not determined by the amount of CdTe deposition. These results indicated that the formation of II-VI QDs using a post-annealing treatment did not follow the conventional growth mechanism for III-V and IV-IV materials. The structural properties of dilute-nitride GaAsNx films grown using plasma-assisted MBE were characterized by TEM and HAADF-STEM. A significant amount of the nitrogen incorporated into the dilute nitride films was found to be interstitial, and that fluctuations in local nitrogen composition also occurred during growth. Post-growth partial relaxation of strain resulted in the formation of {110}-oriented microcracks in the sample with the largest substitutional nitrogen composition. Single- and multi-layered InAs QDs grown on GaAsSb/GaAs composite substrates were investigated using HR-TEM and HAADF-STEM. Correlation between the structural and optoelectronic properties revealed that the GaAsSb barrier layers had played an important role in tuning the energy-band alignments but without affecting the overall structural morphology. However, according to both XRD measurement and electron microscopy the densities of dislocations increased as the number of QD layers built up. An investigation of near-wetting layer-free InAs QDs incorporated with AlAs/GaAs spacer layers was carried out

  17. Ion beam processing of advanced electronic materials

    SciTech Connect

    Cheung, N.W.; Marwick, A.D.; Roberto, J.B.; International Business Machines Corp., Yorktown Heights, NY . Thomas J. Watson Research Center; Oak Ridge National Lab., TN )

    1989-01-01

    This report contains research programs discussed at the materials research society symposia on ion beam processing of advanced electronic materials. Major topics include: shallow implantation and solid-phase epitaxy; damage effects; focused ion beams; MeV implantation; high-dose implantation; implantation in III-V materials and multilayers; and implantation in electronic materials. Individual projects are processed separately for the data bases. (CBS)

  18. Dopant type and/or concentration selective dry photochemical etching of semiconductor materials

    DOEpatents

    Ashby, Carol I. H.; Dishman, James L.

    1987-01-01

    A method of selectively photochemically dry etching a first semiconductor material of a given composition in the presence of a second semiconductor material which is of a composition different from said first material, said second material substantially not being etched during said method, comprises subjecting both materials to the same photon flux of an energy greater than their respective direct bandgaps and to the same gaseous chemical etchant under conditions where said etchant would be ineffective for chemical etching of either material were the photons not present, said conditions also being such that the resultant electronic structure of the first semiconductor material under said photon flux is sufficient for the first material to undergo substantial photochemical etching under said conditions and being such that the resultant electronic structure of the second semiconductor material under said photon flux is not sufficient for the second material to undergo substantial photochemical etching under said conditions. In a preferred mode, the materials are subjected to a bias voltage which suppresses etching in n- or p- type material but not in p- or n-type material, respectively; or suppresses etching in the more heavily doped of two n-type or two p-type materials.

  19. Dopant type and/or concentration selective dry photochemical etching of semiconductor materials

    DOEpatents

    Ashby, C.R.H.; Dishman, J.L.

    1985-10-11

    Disclosed is a method of selectively photochemically dry etching a first semiconductor material of a given composition in the presence of a second semiconductor material which is of a composition different from said first material, said second material substantially not being etched during said method. The method comprises subjecting both materials to the same photon flux of an energy greater than their respective direct bandgaps and to the same gaseous chemical etchant under conditions where said etchant would be ineffective for chemical etching of either material were the photons not present, said conditions also being such that the resultant electronic structure of the first semiconductor material under said photon flux is sufficient for the first material to undergo substantial photochemical etching under said conditions and being such that the resultant electronic structure of the second semiconductor material under said photon flux is not sufficient for the second material to undergo substantial photochemical etching under said conditions. In a preferred mode, the materials are subjected to a bias voltage which suppresses etching in n- or p-type material but not in p- or n-type material, respectively; or suppresses etching in the more heavily doped of two n-type or two p-type materials.

  20. Advanced Materials for Exploration Task Research Results

    NASA Technical Reports Server (NTRS)

    Cook, M. B. (Compiler); Murphy, K. L.; Schneider, T.

    2008-01-01

    The Advanced Materials for Exploration (AME) Activity in Marshall Space Flight Center s (MSFC s) Exploration Science and Technology Directorate coordinated activities from 2001 to 2006 to support in-space propulsion technologies for future missions. Working together, materials scientists and mission planners identified materials shortfalls that are limiting the performance of long-term missions. The goal of the AME project was to deliver improved materials in targeted areas to meet technology development milestones of NASA s exploration-dedicated activities. Materials research tasks were targeted in five areas: (1) Thermal management materials, (2) propulsion materials, (3) materials characterization, (4) vehicle health monitoring materials, and (5) structural materials. Selected tasks were scheduled for completion such that these new materials could be incorporated into customer development plans.

  1. Semiconductor Nanotechnology: Novel Materials and Devices for Electronics, Photonics, and Renewable Energy Applications

    SciTech Connect

    Goodnick, Stephen; Korkin, Anatoli; Krstic, Predrag S; Mascher, Peter; Preston, John; Zaslavsky, Alex

    2010-03-01

    Electronic and photonic information technology and renewable energy alternatives, such as solar energy, fuel cells and batteries, have now reached an advanced stage in their development. Cost-effective improvements to current technological approaches have made great progress, but certain challenges remain. As feature sizes of the latest generations of electronic devices are approaching atomic dimensions, circuit speeds are now being limited by interconnect bottlenecks. This has prompted innovations such as the introduction of new materials into microelectronics manufacturing at an unprecedented rate and alternative technologies to silicon CMOS architectures. Despite the environmental impact of conventional fossil fuel consumption, the low cost of these energy sources has been a long-standing economic barrier to the development of alternative and more efficient renewable energy sources, fuel cells and batteries. In the face of mounting environmental concerns, interest in such alternative energy sources has grown. It is now widely accepted that nanotechnology offers potential solutions for securing future progress in information and energy technologies. The Canadian Semiconductor Technology Conference (CSTC) forum was established 25 years ago in Ottawa as an important symbol of the intrinsic strength of the Canadian semiconductor research and development community, and the Canadian semiconductor industry as a whole. In 2007, the 13th CSTC was held in Montreal, moving for the first time outside the national capital region. The first three meetings in the series of Nano and Giga Challenges in Electronics and Photonics NGCM2002 in Moscow, NGCM2004 in Krakow, and NGC2007 in Phoenix were focused on interdisciplinary research from the fundamentals of materials science to the development of new system architectures. In 2009 NGC2009 and the 14th Canadian Semiconductor Technology Conference (CSTC2009) were held as a joint event, hosted by McMaster University (10 14 August

  2. Advanced Materials for Neural Surface Electrodes

    PubMed Central

    Schendel, Amelia A.; Eliceiri, Kevin W.; Williams, Justin C.

    2015-01-01

    Designing electrodes for neural interfacing applications requires deep consideration of a multitude of materials factors. These factors include, but are not limited to, the stiffness, biocompatibility, biostability, dielectric, and conductivity properties of the materials involved. The combination of materials properties chosen not only determines the ability of the device to perform its intended function, but also the extent to which the body reacts to the presence of the device after implantation. Advances in the field of materials science continue to yield new and improved materials with properties well-suited for neural applications. Although many of these materials have been well-established for non-biological applications, their use in medical devices is still relatively novel. The intention of this review is to outline new material advances for neural electrode arrays, in particular those that interface with the surface of the nervous tissue, as well as to propose future directions for neural surface electrode development. PMID:26392802

  3. Joining of advanced materials by superplastic deformation

    DOEpatents

    Goretta, Kenneth C.; Routbort, Jules L.; Gutierrez-Mora, Felipe

    2008-08-19

    A method for utilizing superplastic deformation with or without a novel joint compound that leads to the joining of advanced ceramic materials, intermetallics, and cermets. A joint formed by this approach is as strong as or stronger than the materials joined. The method does not require elaborate surface preparation or application techniques.

  4. Joining of advanced materials by superplastic deformation

    DOEpatents

    Goretta, Kenneth C.; Routbort, Jules L.; Gutierrez-Mora, Felipe

    2005-12-13

    A method for utilizing superplastic deformation with or without a novel joint compound that leads to the joining of advanced ceramic materials, intermetallics, and cermets. A joint formed by this approach is as strong as or stronger than the materials joined. The method does not require elaborate surface preparation or application techniques.

  5. Methods of measurement for semiconductor materials, process control, and devices

    NASA Technical Reports Server (NTRS)

    Bullis, W. M. (Editor)

    1972-01-01

    Significant accomplishments include development of a procedure to correct for the substantial differences of transistor delay time as measured with different instruments or with the same instrument at different frequencies; association of infrared response spectra of poor quality germanium gamma ray detectors with spectra of detectors fabricated from portions of a good crystal that had been degraded in known ways; and confirmation of the excellent quality and cosmetic appearance of ultrasonic bonds made with aluminum ribbon wire. Work is continuing on measurement of resistivity of semiconductor crystals; study of gold-doped silicon, development of the infrared response technique; evaluation of wire bonds and die attachment; and measurement of thermal properties of semiconductor devices, delay time and related carrier transport properties in junction devices, and noise properties of microwave diodes.

  6. Materials chemistry. Composition-matched molecular "solders" for semiconductors.

    PubMed

    Dolzhnikov, Dmitriy S; Zhang, Hao; Jang, Jaeyoung; Son, Jae Sung; Panthani, Matthew G; Shibata, Tomohiro; Chattopadhyay, Soma; Talapin, Dmitri V

    2015-01-23

    We propose a general strategy to synthesize largely unexplored soluble chalcogenidometallates of cadmium, lead, and bismuth. These compounds can be used as "solders" for semiconductors widely used in photovoltaics and thermoelectrics. The addition of solder helped to bond crystal surfaces and link nano- or mesoscale particles together. For example, CdSe nanocrystals with Na2Cd2Se3 solder was used as a soluble precursor for CdSe films with electron mobilities exceeding 300 square centimeters per volt-second. CdTe, PbTe, and Bi2Te3 powders were molded into various shapes in the presence of a small additive of composition-matched chalcogenidometallate or chalcogel, thus opening new design spaces for semiconductor technologies. PMID:25569110

  7. Methane storage in advanced porous materials.

    PubMed

    Makal, Trevor A; Li, Jian-Rong; Lu, Weigang; Zhou, Hong-Cai

    2012-12-01

    The need for alternative fuels is greater now than ever before. With considerable sources available and low pollution factor, methane is a natural choice as petroleum replacement in cars and other mobile applications. However, efficient storage methods are still lacking to implement the application of methane in the automotive industry. Advanced porous materials, metal-organic frameworks and porous organic polymers, have received considerable attention in sorptive storage applications owing to their exceptionally high surface areas and chemically-tunable structures. In this critical review we provide an overview of the current status of the application of these two types of advanced porous materials in the storage of methane. Examples of materials exhibiting high methane storage capacities are analyzed and methods for increasing the applicability of these advanced porous materials in methane storage technologies described. PMID:22990753

  8. Laser dicing of silicon and composite semiconductor materials

    NASA Astrophysics Data System (ADS)

    Sibailly, Ochelio; Richerzhagen, Bernold

    2004-07-01

    Dicing of semiconductor wafers is an example of an application requiring a processing quality superior to what can be achieved using classical laser techniques. For this reason, sawing the wafers with a diamond-edged blade has been developed into a high-tech process, that guarantees good and reliable cuts for Silicon wafers of more than 300 microns thickness. Today, wafer thickness is getting thinner; down to 50 microns and also more brittle III-V compound semiconductors are used more frequently. On these thin wafers; the laser begins again to compete with the diamond saw, because of laser cutting-quality and cutting-speed, are increasing with decreasing wafer thickness. Conventional laser cutting however has the disadvantages of debris deposition on the wafer surface, weak chip fracture strength because of heat induced micro cracks. An elegant way to overcome these problems is to opt for the water-jet guided laser technology. In this technique the laser is conducted to the work piece by total internal reflection in a 'hair-thin' stable water-jet, comparable to an optical fiber. The water jet guided laser technique was developed originally in order to reduce the heat affected zone near the cut, but in fact the absence of beam divergence and the efficient melt xpulsion are also important advantages. In this presentation we will give an overview on today"s state of the art in dicing thin wafers, especially compound semiconductor wafers, using the water-jet guided laser technology.

  9. New Advanced Dielectric Materials for Accelerator Applications

    SciTech Connect

    Kanareykin, A.

    2010-11-04

    We present our recent results on the development and experimental testing of advanced dielectric materials that are capable of supporting the high RF electric fields generated by electron beams or pulsed high power microwaves. These materials have been optimized or specially designed for accelerator applications. The materials discussed here include low loss microwave ceramics, quartz, Chemical Vapor Deposition diamonds and nonlinear Barium Strontium Titanate based ferroelectrics.

  10. Advanced materials for aircraft engine applications.

    PubMed

    Backman, D G; Williams, J C

    1992-02-28

    A review of advances for aircraft engine structural materials and processes is presented. Improved materials, such as superalloys, and the processes for making turbine disks and blades have had a major impact on the capability of modern gas turbine engines. New structural materials, notably composites and intermetallic materials, are emerging that will eventually further enhance engine performance, reduce engine weight, and thereby enable new aircraft systems. In the future, successful aerospace manufacturers will combine product design and materials excellence with improved manufacturing methods to increase production efficiency, enhance product quality, and decrease the engine development cycle time. PMID:17817782

  11. Materials Requirements for Advanced Propulsion Systems

    NASA Technical Reports Server (NTRS)

    Whitaker, Ann F.; Cook, Mary Beth; Clinton, R. G., Jr.

    2005-01-01

    NASA's mission to "reach the Moon and Mars" will be obtained only if research begins now to develop materials with expanded capabilities to reduce mass, cost and risk to the program. Current materials cannot function satisfactorily in the deep space environments and do not meet the requirements of long term space propulsion concepts for manned missions. Directed research is needed to better understand materials behavior for optimizing their processing. This research, generating a deeper understanding of material behavior, can lead to enhanced implementation of materials for future exploration vehicles. materials providing new approaches for manufacture and new options for In response to this need for more robust materials, NASA's Exploration Systems Mission Directorate (ESMD) has established a strategic research initiative dedicated to materials development supporting NASA's space propulsion needs. The Advanced Materials for Exploration (AME) element directs basic and applied research to understand material behavior and develop improved materials allowing propulsion systems to operate beyond their current limitations. This paper will discuss the approach used to direct the path of strategic research for advanced materials to ensure that the research is indeed supportive of NASA's future missions to the moon, Mars, and beyond.

  12. Advanced Materials and Processing 2010

    NASA Astrophysics Data System (ADS)

    Zhang, Yunfeng; Su, Chun Wei; Xia, Hui; Xiao, Pengfei

    2011-06-01

    Strain sensors made from MWNT/polymer nanocomposites / Gang Yin, Ning Hu and Yuan Li -- Shear band evolution and nanostructure formation in titanium by cold rolling / Dengke Yang, Peter D. Hodgson and Cuie Wen -- Biodegradable Mg-Zr-Ca alloys for bone implant materials / Yuncang Li ... [et al.] -- Hydroxyapatite synthesized from nanosized calcium carbonate via hydrothermal method / Yu-Shiang Wu, Wen-Ku Chang and Min Jou -- Modeling of the magnetization process and orthogonal fluxgate sensitivity of ferromagnetic micro-wire arrays / Fan Jie ... [et al.] -- Fabrication of silicon oxide nanowires on Ni coated silicon substrate by simple heating process / Bo Peng and Kwon-Koo Cho -- Deposition of TiOxNy thin films with various nitrogen flow rate: growth behavior and structural properties / S.-J. Cho ... [et al.] -- Observation on photoluminescence evolution in 300 KeV self-ion implanted and annealed silicon / Yu Yang ... [et al.] -- Facile synthesis of lithium niobate from a novel precursor H[symbol] / Meinan Liu ... [et al.] -- Effects of the buffer layers on the adhesion and antimicrobial properties of the amorphous ZrAlNiCuSi films / Pai-Tsung Chiang ... [et al.] -- Fabrication of ZnO nanorods by electrochemical deposition process and its photovoltaic properties / Jin-Hwa Kim ... [et al.] -- Cryogenic resistivities of NbTiAlVTaLax, CoCrFeNiCu and CoCrFeNiAl high entropy alloys / Xiao Yang and Yong Zhang -- Modeling of centrifugal force field and the effect on filling and solidification in centrifugal casting / Wenbin Sheng, Chunxue Ma and Wanli Gu -- Electrochemical properties of TiO[symbol] nanotube arrays film prepared by anodic oxidation / Young-Jin Choi ... [et al.] -- Effect of Ce additions on high temperature properties of Mg-5Sn-3Al-1Zn alloy / Byoung Soo Kang ... [et al.] -- Sono-electroless plating of Ni-Mo-P film / Atsushi Chiba, Masato Kanou and Wen-Chang Wu -- Diameter dependence of giant magneto-impedance effect in co-based melt extracted amorphous

  13. Advanced Materials and Processing 2010

    NASA Astrophysics Data System (ADS)

    Zhang, Yunfeng; Su, Chun Wei; Xia, Hui; Xiao, Pengfei

    2011-06-01

    Strain sensors made from MWNT/polymer nanocomposites / Gang Yin, Ning Hu and Yuan Li -- Shear band evolution and nanostructure formation in titanium by cold rolling / Dengke Yang, Peter D. Hodgson and Cuie Wen -- Biodegradable Mg-Zr-Ca alloys for bone implant materials / Yuncang Li ... [et al.] -- Hydroxyapatite synthesized from nanosized calcium carbonate via hydrothermal method / Yu-Shiang Wu, Wen-Ku Chang and Min Jou -- Modeling of the magnetization process and orthogonal fluxgate sensitivity of ferromagnetic micro-wire arrays / Fan Jie ... [et al.] -- Fabrication of silicon oxide nanowires on Ni coated silicon substrate by simple heating process / Bo Peng and Kwon-Koo Cho -- Deposition of TiOxNy thin films with various nitrogen flow rate: growth behavior and structural properties / S.-J. Cho ... [et al.] -- Observation on photoluminescence evolution in 300 KeV self-ion implanted and annealed silicon / Yu Yang ... [et al.] -- Facile synthesis of lithium niobate from a novel precursor H[symbol] / Meinan Liu ... [et al.] -- Effects of the buffer layers on the adhesion and antimicrobial properties of the amorphous ZrAlNiCuSi films / Pai-Tsung Chiang ... [et al.] -- Fabrication of ZnO nanorods by electrochemical deposition process and its photovoltaic properties / Jin-Hwa Kim ... [et al.] -- Cryogenic resistivities of NbTiAlVTaLax, CoCrFeNiCu and CoCrFeNiAl high entropy alloys / Xiao Yang and Yong Zhang -- Modeling of centrifugal force field and the effect on filling and solidification in centrifugal casting / Wenbin Sheng, Chunxue Ma and Wanli Gu -- Electrochemical properties of TiO[symbol] nanotube arrays film prepared by anodic oxidation / Young-Jin Choi ... [et al.] -- Effect of Ce additions on high temperature properties of Mg-5Sn-3Al-1Zn alloy / Byoung Soo Kang ... [et al.] -- Sono-electroless plating of Ni-Mo-P film / Atsushi Chiba, Masato Kanou and Wen-Chang Wu -- Diameter dependence of giant magneto-impedance effect in co-based melt extracted amorphous

  14. Advanced materials for geothermal energy processes

    SciTech Connect

    Kukacka, L.E.

    1985-08-01

    The primary goal of the geothermal materials program is to ensure that the private sector development of geothermal energy resources is not constrained by the availability of technologically and economically viable materials of construction. This requires the performance of long-term high risk GHTD-sponsored materials R and D. Ongoing programs described include high temperature elastomers for dynamic sealing applications, advanced materials for lost circulation control, waste utilization and disposal, corrosion resistant elastomeric liners for well casing, and non-metallic heat exchangers. 9 refs.

  15. NASA Thermographic Inspection of Advanced Composite Materials

    NASA Technical Reports Server (NTRS)

    Cramer, K. Elliott

    2004-01-01

    As the use of advanced composite materials continues to increase in the aerospace community, the need for a quantitative, rapid, in situ inspection technology has become a critical concern throughout the industry. In many applications it is necessary to monitor changes in these materials over an extended period of time to determine the effects of various load conditions. Additionally, the detection and characterization of defects such as delaminations, is of great concern. This paper will present the application of infrared thermography to characterize various composite materials and show the advantages of different heat source types. Finally, various analysis methodologies used for quantitative material property characterization will be discussed.

  16. X-ray photoemission electron microscopy for the study of semiconductor materials

    SciTech Connect

    Anders, S.; Stammler, T.; Padmore, H.; Terminello, L.J.; Jankowski, A.F.; Stohr, J.; Diaz, J.; Cossy-Gantner, A.

    1998-03-01

    Photoemission Electron Microscopy (PEEM) using X-rays is a novel combination of two established materials analysis techniques--PEEM using UV light, and Near Edge X-ray Absorption Fine Structure (NEXAFS) spectroscopy. This combination allows the study of elemental composition and bonding structure of the sample by NEXAFS spectroscopy with a high spatial resolution given by the microscope. A simple, two lens, 10 kV operation voltage PEEM has been used at the Stanford Synchrotron Radiation Laboratory and at the Advanced Light Source (ALS) in Berkeley to study various problems including materials of interest for the semiconductor industry. In the present paper the authors give a short overview over the method and the instrument which was used, and describe in detail a number of applications. These applications include the study of the different phases of titanium disilicide, various phases of boron nitride, and the analysis of small particles. A brief outlook is given on possible new fields of application of the PEEM technique, and the development of new PEEM instruments.

  17. An advanced microcomputer design for processing of semiconductor materials

    NASA Technical Reports Server (NTRS)

    Bjoern, L.; Lindkvist, L.; Zaar, J.

    1988-01-01

    In the Get Away Special 330 payload two germanium samples doped with gallium will be processed. The aim of the experiments is to create a planar solid/liquid interface, and to study the breakdown of this interface as the crystal growth rate increases. For the experiments a gradient furnace was designed which is heated by resistive heaters. Cooling is provided by circulating gas from the atmosphere in the cannister through cooling channels in the furnace. The temperature along the sample are measured by platinum/rhodium thermocouples. The furnace is controlled by a microcomputer system, based upon the processor 80C88. A data acquisition system is integrated into the system. In order to synchronize the different actions in time, a multitask manager is used.

  18. Advanced superconducting materials for electronic applications

    NASA Astrophysics Data System (ADS)

    Beasley, M. R.

    1980-10-01

    Developments in the fabrication of tunnel junctions using Nb- and V-base transition-metal compounds and alloys are summarized. Particular attention is given to the advances in codeposition of these refractory high-transition-temperature superconductors and the properties of thin films deposited by the dual-electron-beam coevaporation technique. Problems associated with these materials are identified, and prospects for the future are discussed. Of the materials reviewed, Nb3Sn is singled out as one deserving further development.

  19. High efficiency semimetal/semiconductor nanocomposite thermoelectric materials

    SciTech Connect

    Zide, J. M. O.; Bahk, J.-H.; Zeng, G.; Bowers, J. E.; Singh, R.; Zebarjadi, M.; Bian, Z. X.; Shakouri, A.; Lu, H.; Gossard, A. C.; Feser, J. P.; Xu, D.; Singer, S. L.; Majumdar, A.

    2010-12-15

    Rare-earth impurities in III-V semiconductors are known to self-assemble into semimetallic nanoparticles which have been shown to reduce lattice thermal conductivity without harming electronic properties. Here, we show that adjusting the band alignment between ErAs and In{sub 0.53}Ga{sub 0.47-X}Al{sub X}As allows energy-dependent scattering of carriers that can be used to increase thermoelectric power factor. Films of various Al concentrations were grown by molecular beam epitaxy, and thermoelectric properties were characterized. We observe concurrent increases in electrical conductivity and Seebeck coefficient with increasing temperatures, demonstrating energy-dependent scattering. We report the first simultaneous power factor enhancement and thermal conductivity reduction in a nanoparticle-based system, resulting in a high figure of merit, ZT=1.33 at 800 K.

  20. Property Data Summaries for Advanced Materials

    National Institute of Standards and Technology Data Gateway

    SRD 150 NIST Property Data Summaries for Advanced Materials (Web, free access)   Property Data Summaries are topical collections of property values derived from surveys of published data. Thermal, mechanical, structural, and chemical properties are included in the collections.

  1. P and n-type microcrystalline semiconductor alloy material including band gap widening elements, devices utilizing same

    DOEpatents

    Guha, Subhendu; Ovshinsky, Stanford R.

    1988-10-04

    An n-type microcrystalline semiconductor alloy material including a band gap widening element; a method of fabricating p-type microcrystalline semiconductor alloy material including a band gap widening element; and electronic and photovoltaic devices incorporating said n-type and p-type materials.

  2. High-temperature MEMS Heater Platforms: Long-term Performance of Metal and Semiconductor Heater Materials

    PubMed Central

    Spannhake, Jan; Schulz, Olaf; Helwig, Andreas; Krenkow, Angelika; Müller, Gerhard; Doll, Theodor

    2006-01-01

    Micromachined thermal heater platforms offer low electrical power consumption and high modulation speed, i.e. properties which are advantageous for realizing non-dispersive infrared (NDIR) gas- and liquid monitoring systems. In this paper, we report on investigations on silicon-on-insulator (SOI) based infrared (IR) emitter devices heated by employing different kinds of metallic and semiconductor heater materials. Our results clearly reveal the superior high-temperature performance of semiconductor over metallic heater materials. Long-term stable emitter operation in the vicinity of 1300 K could be attained using heavily antimony-doped tin dioxide (SnO2:Sb) heater elements.

  3. Emission energy control of semiconductor quantum dots using phase change material

    NASA Astrophysics Data System (ADS)

    Kanazawa, Shohei; Sato, Yu; Yamamura, Ariyoshi; Saiki, Toshiharu

    2015-03-01

    Semiconductor quantum dots have paid much attention as it is a promising candidate for quantum, optical devices, such as quantum computer and quantum dot laser. We propose a local emission energy control method of semiconductor quantum dots using applying strain by volume expansion of phase change material. Phase change material can change its phase crystalline to amorphous, and the volume expand by its phase change. This method can control energy shift direction and amount by amorphous religion and depth. Using this method, we matched emission energy of two InAs/InP quantum dots. This achievement can connect to observing superradiance phenomenon and quantum dot coupling effect.

  4. Advanced Industrial Materials (AIM) fellowship program

    SciTech Connect

    McCleary, D.D.

    1997-04-01

    The Advanced Industrial Materials (AIM) Program administers a Graduate Fellowship Program focused toward helping students who are currently under represented in the nation`s pool of scientists and engineers, enter and complete advanced degree programs. The objectives of the program are to: (1) establish and maintain cooperative linkages between DOE and professors at universities with graduate programs leading toward degrees or with degree options in Materials Science, Materials Engineering, Metallurgical Engineering, and Ceramic Engineering, the disciplines most closely related to the AIM Program at Oak Ridge National Laboratory (ORNL); (2) strengthen the capabilities and increase the level of participation of currently under represented groups in master`s degree programs, and (3) offer graduate students an opportunity for practical research experience related to their thesis topic through the three-month research assignment or practicum at ORNL. The program is administered by the Oak Ridge Institute for Science and Education (ORISE).

  5. Structural materials challenges for advanced reactor systems

    NASA Astrophysics Data System (ADS)

    Yvon, P.; Carré, F.

    2009-03-01

    Key technologies for advanced nuclear systems encompass high temperature structural materials, fast neutron resistant core materials, and specific reactor and power conversion technologies (intermediate heat exchanger, turbo-machinery, high temperature electrolytic or thermo-chemical water splitting processes, etc.). The main requirements for the materials to be used in these reactor systems are dimensional stability under irradiation, whether under stress (irradiation creep or relaxation) or without stress (swelling, growth), an acceptable evolution under ageing of the mechanical properties (tensile strength, ductility, creep resistance, fracture toughness, resilience) and a good behavior in corrosive environments (reactor coolant or process fluid). Other criteria for the materials are their cost to fabricate and to assemble, and their composition could be optimized in order for instance to present low-activation (or rapid desactivation) features which facilitate maintenance and disposal. These requirements have to be met under normal operating conditions, as well as in incidental and accidental conditions. These challenging requirements imply that in most cases, the use of conventional nuclear materials is excluded, even after optimization and a new range of materials has to be developed and qualified for nuclear use. This paper gives a brief overview of various materials that are essential to establish advanced systems feasibility and performance for in pile and out of pile applications, such as ferritic/martensitic steels (9-12% Cr), nickel based alloys (Haynes 230, Inconel 617, etc.), oxide dispersion strengthened ferritic/martensitic steels, and ceramics (SiC, TiC, etc.). This article gives also an insight into the various natures of R&D needed on advanced materials, including fundamental research to investigate basic physical and chemical phenomena occurring in normal and accidental operating conditions, lab-scale tests to characterize candidate materials

  6. Heterogeneous integration of semiconductor materials: basic issues, current progress, and future prospects

    NASA Astrophysics Data System (ADS)

    Woodall, Jerry M.

    2012-06-01

    The world's dominant IC material, silicon, cannot do everything we want a semiconductor material to do. However, for this discussion, the fact that Si wafers are of high quality, large and cheap is of great interest. This is important for at least two reasons. First, nearly all of the electronic and photonic compound semiconductor devices that comprise the current $20 billion per year market are fabricated on substrates that are either very expensive or non-optimal for the epitaxy required to realize the device or an IC of interest. A second reason is the integration of new functionality to current Si technology. Clearly, if many of the current photonic applications already realized in current compound semiconductor technology could be integrated into Si technology, some of the herculean efforts to continue following Moore's Law (including trying to do it via nanotechnology) could be mitigated. This presentation examines some of the basic materials science issues involved with heterogeneous integration of semiconductor materials. These include those applications in which the active device region requires a high degree of crystal perfection and those that do not. Epitaxy issues at the hetero-interface, heterovalent versus homovalent epigrowth, and dislocation dynamics are presented. Notable historical examples are summarized, followed by examples of current successful approaches including the materials science concepts used to achieve the results. A list is made of some challenges that need to be solved in order to continue making future progress.

  7. Method of making macrocrystalline or single crystal semiconductor material

    NASA Technical Reports Server (NTRS)

    Shlichta, P. J. (Inventor); Holliday, R. J. (Inventor)

    1986-01-01

    A macrocrystalline or single crystal semiconductive material is formed from a primary substrate including a single crystal or several very large crystals of a relatively low melting material. This primary substrate is deposited on a base such as steel or ceramic, and it may be formed from such metals as zinc, cadmium, germanium, aluminum, tin, lead, copper, brass, magnesium silicide, or magnesium stannide. These materials generally have a melting point below about 1000 C and form on the base crystals the size of fingernails or greater. The primary substrate has an epitaxial relationship with a subsequently applied layer of material, and because of this epitaxial relationship, the material deposited on the primary substrate will have essentially the same crystal size as the crystals in the primary substrate. If required, successive layers are formed, each of a material which has an epitaxial relationship with the previously deposited layer, until a layer is formed which has an epitaxial relationship with the semiconductive material. This layer is referred to as the epitaxial substrate, and its crystals serve as sites for the growth of large crystals of semiconductive material. The primary substrate is passivated to remove or otherwise convert it into a stable or nonreactive state prior to deposition of the seconductive material.

  8. Advanced materials and methods for next generation spintronics

    NASA Astrophysics Data System (ADS)

    Siegel, Gene Phillip

    The modern age is filled with ever-advancing electronic devices. The contents of this dissertation continue the desire for faster, smaller, better electronics. Specifically, this dissertation addresses a field known as "spintronics", electronic devices based on an electron's spin, not just its charge. The field of spintronics originated in 1990 when Datta and Das first proposed a "spin transistor" that would function by passing a spin polarized current from a magnetic electrode into a semiconductor channel. The spins in the channel could then be manipulated by applying an electrical voltage across the gate of the device. However, it has since been found that a great amount of scattering occurs at the ferromagnet/semiconductor interface due to the large impedance mismatch that exists between the two materials. Because of this, there were three updated versions of the spintronic transistor that were proposed to improve spin injection: one that used a ferromagnetic semiconductor electrode, one that added a tunnel barrier between the ferromagnet and semiconductor, and one that utilized a ferromagnetic tunnel barrier which would act like a spin filter. It was next proposed that it may be possible to achieve a "pure spin current", or a spin current with no concurrent electric current (i.e., no net flow of electrons). One such method that was discovered is the spin Seebeck effect, which was discovered in 2008 by Uchida et al., in which a thermal gradient in a magnetic material generates a spin current which can be injected into adjacent material as a pure spin current. The first section of this dissertation addresses this spin Seebeck effect (SSE). The goal was to create such a device that both performs better than previously reported devices and is capable of operating without the aid of an external magnetic field. We were successful in this endeavor. The trick to achieving both of these goals was found to be in the roughness of the magnetic layer. A rougher magnetic

  9. Advanced Material Strategies for Tissue Engineering Scaffolds

    PubMed Central

    Engelmayr, George C.; Borenstein, Jeffrey T.; Moutos, Franklin T.; Guilak, Farshid

    2010-01-01

    Tissue engineering seeks to restore the function of diseased or damaged tissues through the use of cells and biomaterial scaffolds. It is now apparent that the next generation of functional tissue replacements will require advanced material strategies to achieve many of the important requirements for long-term success. Here we provide representative examples of engineered skeletal and myocardial tissue constructs in which scaffolds were explicitly designed to match native tissue mechanical properties as well as to promote cell alignment. We discuss recent progress in microfluidic devices that can potentially serve as tissue engineering scaffolds, since mass transport via microvascular-like structures will be essential in the development of tissue engineered constructs on the length scale of native tissues. Given the rapid evolution of the field of tissue engineering, it is important to consider the use of advanced materials in light of the emerging role of genetics, growth factors, bioreactors, and other technologies. PMID:20882506

  10. Advanced fiber/matrix material systems

    NASA Technical Reports Server (NTRS)

    Hartness, J. Timothy

    1991-01-01

    Work completed in Phase 1 of the NASA Advanced Composite Technology program is discussed. Two towpreg forms (commingled yarns and fused powder towpregs) are being characterized under the program. These towpregs will be used to evaluate textile fabrication technologies for advanced aircraft composite structures. The unique characteristic of both of these material forms is that both fiber and matrix resin are handled in a single operation such as weaving, braiding, or fiber placement. The evaluation of both commingled and fused powder towpreg is described. Various polymer materials are considered for both subsonic and supersonic applications. Polymers initially being evaluated include thermoplastic polyimides such as Larc-TPI and New-TPI, thermoplastics such as PEEK and PEKEKK as well as some toughened crosslinked polyimides. Preliminary mechanical properties as well as tow handling are evaluated.

  11. Oxide semiconductor thin-film transistors: a review of recent advances.

    PubMed

    Fortunato, E; Barquinha, P; Martins, R

    2012-06-12

    Transparent electronics is today one of the most advanced topics for a wide range of device applications. The key components are wide bandgap semiconductors, where oxides of different origins play an important role, not only as passive component but also as active component, similar to what is observed in conventional semiconductors like silicon. Transparent electronics has gained special attention during the last few years and is today established as one of the most promising technologies for leading the next generation of flat panel display due to its excellent electronic performance. In this paper the recent progress in n- and p-type oxide based thin-film transistors (TFT) is reviewed, with special emphasis on solution-processed and p-type, and the major milestones already achieved with this emerging and very promising technology are summarizeed. After a short introduction where the main advantages of these semiconductors are presented, as well as the industry expectations, the beautiful history of TFTs is revisited, including the main landmarks in the last 80 years, finishing by referring to some papers that have played an important role in shaping transparent electronics. Then, an overview is presented of state of the art n-type TFTs processed by physical vapour deposition methods, and finally one of the most exciting, promising, and low cost but powerful technologies is discussed: solution-processed oxide TFTs. Moreover, a more detailed focus analysis will be given concerning p-type oxide TFTs, mainly centred on two of the most promising semiconductor candidates: copper oxide and tin oxide. The most recent data related to the production of complementary metal oxide semiconductor (CMOS) devices based on n- and p-type oxide TFT is also be presented. The last topic of this review is devoted to some emerging applications, finalizing with the main conclusions. Related work that originated at CENIMAT|I3N during the last six years is included in more detail, which

  12. Superatoms and Metal-Semiconductor Motifs for Cluster Materials

    SciTech Connect

    Castleman, A. W.

    2013-10-11

    A molecular understanding of catalysis and catalytically active materials is of fundamental importance in designing new substances for applications in energy and fuels. We have performed reactivity studies and ultrafast ionization and coulomb explosion studies on a variety of catalytically-relevant materials, including transition metal oxides of Fe, Co, Ni, Cu, Ti, V, Nb, and Ta. We demonstrate that differences in charge state, geometry, and elemental composition of clusters of such materials determine chemical reactivity and ionization behavior, crucial steps in improving performance of catalysts.

  13. Advanced Ceramic Materials for Future Aerospace Applications

    NASA Technical Reports Server (NTRS)

    Misra, Ajay

    2015-01-01

    With growing trend toward higher temperature capabilities, lightweight, and multifunctionality, significant advances in ceramic matrix composites (CMCs) will be required for future aerospace applications. The presentation will provide an overview of material requirements for future aerospace missions, and the role of ceramics and CMCs in meeting those requirements. Aerospace applications will include gas turbine engines, aircraft structure, hypersonic and access to space vehicles, space power and propulsion, and space communication.

  14. Advanced materials for space nuclear power systems

    SciTech Connect

    Titran, R.H.; Grobstein, T.L. . Lewis Research Center); Ellis, D.L. )

    1991-01-01

    Research on monolithic refractory metal alloys and on metal matrix composites is being conducted at the NASA Lewis Research Center, Cleveland, Ohio, in support of advanced space power systems. The overall philosophy of the research is to develop and characterize new high-temperature power conversion and radiator materials and to provide spacecraft designers with material selection options and design information. Research on three candidate materials (carbide strengthened niobium alloy PWC-11 for fuel cladding, graphite fiber reinforced copper matrix composites (Gr/Cu) for heat rejection fins, and tungsten fiber reinforced niobium matrix composites (W/NB) for fuel containment and structural supports) considered for space power system applications is discussed. Each of these types of materials offers unique advantages for space power applications.

  15. Thermal Characterization of Nanostructures and Advanced Engineered Materials

    NASA Astrophysics Data System (ADS)

    Goyal, Vivek Kumar

    Continuous downscaling of Si complementary metal-oxide semiconductor (CMOS) technology and progress in high-power electronics demand more efficient heat removal techniques to handle the increasing power density and rising temperature of hot spots. For this reason, it is important to investigate thermal properties of materials at nanometer scale and identify materials with the extremely large or extremely low thermal conductivity for applications as heat spreaders or heat insulators in the next generation of integrated circuits. The thin films used in microelectronic and photonic devices need to have high thermal conductivity in order to transfer the dissipated power to heat sinks more effectively. On the other hand, thermoelectric devices call for materials or structures with low thermal conductivity because the performance of thermoelectric devices is determined by the figure of merit Z=S2sigma/K, where S is the Seebeck coefficient, K and sigma are the thermal and electrical conductivity, respectively. Nanostructured superlattices can have drastically reduced thermal conductivity as compared to their bulk counterparts making them promising candidates for high-efficiency thermoelectric materials. Other applications calling for thin films with low thermal conductivity value are high-temperature coatings for engines. Thus, materials with both high thermal conductivity and low thermal conductivity are technologically important. The increasing temperature of the hot spots in state-of-the-art chips stimulates the search for innovative methods for heat removal. One promising approach is to incorporate materials, which have high thermal conductivity into the chip design. Two suitable candidates for such applications are diamond and graphene. Another approach is to integrate the high-efficiency thermoelectric elements for on-spot cooling. In addition, there is strong motivation for improved thermal interface materials (TIMs) for heat transfer from the heat-generating chip

  16. Library of Advanced Materials for Engineering : LAME.

    SciTech Connect

    Hammerand, Daniel Carl; Scherzinger, William Mark

    2007-08-01

    Constitutive modeling is an important aspect of computational solid mechanics. Sandia National Laboratories has always had a considerable effort in the development of constitutive models for complex material behavior. However, for this development to be of use the models need to be implemented in our solid mechanics application codes. In support of this important role, the Library of Advanced Materials for Engineering (LAME) has been developed in Engineering Sciences. The library allows for simple implementation of constitutive models by model developers and access to these models by application codes. The library is written in C++ and has a very simple object oriented programming structure. This report summarizes the current status of LAME.

  17. Advanced Thermoelectric Materials for Radioisotope Thermoelectric Generators

    NASA Technical Reports Server (NTRS)

    Caillat, Thierry; Hunag, C.-K.; Cheng, S.; Chi, S. C.; Gogna, P.; Paik, J.; Ravi, V.; Firdosy, S.; Ewell, R.

    2008-01-01

    This slide presentation reviews the progress and processes involved in creating new and advanced thermoelectric materials to be used in the design of new radioiootope thermoelectric generators (RTGs). In a program with Department of Energy, NASA is working to develop the next generation of RTGs, that will provide significant benefits for deep space missions that NASA will perform. These RTG's are planned to be capable of delivering up to 17% system efficiency and over 12 W/kg specific power. The thermoelectric materials being developed are an important step in this process.

  18. Evaluation of surface and bulk qualities of semiconductor materials by a laser-induced photothermal technique

    NASA Astrophysics Data System (ADS)

    Dong, Jingtao; Chen, Jian; Sun, Shiwen; Zhang, Dawei; Zhuang, Songlin; Wu, Zhouling

    2015-05-01

    Non-destructive evaluation of defects for semiconductor materials is critical to the quality control process. The existing evaluation methods, including radiographic testing, ultrasonic detection, fluorescence and infrared imaging, are widely used in industrial applications. In this paper an instrument based on laser-induced photothermal technique was applied to study various semiconductor materials. With a specially arranged pump-probe configuration, this system can do three dimensional mapping of local properties and defects. By using this photothermal instrument, several semiconductors, such as bulk CdZnTe (CZT) crystals and monocrystalline silicon wafers under different processing conditions, were investigated. The surface and internal structures and defects of these materials were tested nondestructively by the 3-D photothermal microscope. The results show intersting correlation between the photothermal characterizations and the processing conditions. In addition, the details of the development of the 3-D photothermal microscope were also presented. The system provides user-friendly operations of the defects characterization process and shows great potential of application for characterization of semiconductor materials.

  19. Thermoelectric figure of merit of a material consisting of semiconductor or metal particles

    SciTech Connect

    Kharlamov, V. F.

    2013-07-15

    It is found that the dimensionless thermoelectric figure of merit of a material consisting of a large number of ball-shaped semiconductor or metal particles can be much more than unity. The introduction of an insulator into the space between the particles is shown to sharply increase the power of the converter of heat energy into electric current energy.

  20. System for characterizing semiconductor materials and photovoltaic device

    DOEpatents

    Sopori, Bhushan L.

    1996-01-01

    Apparatus for detecting and mapping defects in the surfaces of polycrystalline material in a manner that distinguishes dislocation pits from grain boundaries includes a first laser of a first wavelength for illuminating a wide spot on the surface of the material, a second laser of a second relatively shorter wavelength for illuminating a relatively narrower spot on the surface of the material, a light integrating sphere with apertures for capturing light scattered by etched dislocation pits in an intermediate range away from specular reflection while allowing light scattered by etched grain boundaries in a near range from specular reflection to pass through, and optical detection devices for detecting and measuring intensities of the respective intermediate scattered light and near specular scattered light. A center blocking aperture or filter can be used to screen out specular reflected light, which would be reflected by nondefect portions of the polycrystalline material surface. An X-Y translation stage for mounting the polycrystalline material and signal processing and computer equipment accommodate raster mapping, recording, and displaying of respective dislocation and grain boundary defect densities. A special etch procedure is included, which prepares the polycrystalline material surface to produce distinguishable intermediate and near specular light scattering in patterns that have statistical relevance to the dislocation and grain boundary defect densities. A reflectance measurement of the piece of material is obtained by adding together the signals from the optical detection devices. In the case where the piece of material includes a photovoltaic device, the current induced in the device by the illuminating light can be measured with a current sensing amplifier after the light integrating sphere is moved away from the device.

  1. System for characterizing semiconductor materials and photovoltaic device

    DOEpatents

    Sopori, B.L.

    1996-12-03

    Apparatus for detecting and mapping defects in the surfaces of polycrystalline material in a manner that distinguishes dislocation pits from grain boundaries includes a first laser of a first wavelength for illuminating a wide spot on the surface of the material, a second laser of a second relatively shorter wavelength for illuminating a relatively narrower spot on the surface of the material, a light integrating sphere with apertures for capturing light scattered by etched dislocation pits in an intermediate range away from specular reflection while allowing light scattered by etched grain boundaries in a near range from specular reflection to pass through, and optical detection devices for detecting and measuring intensities of the respective intermediate scattered light and near specular scattered light. A center blocking aperture or filter can be used to screen out specular reflected light, which would be reflected by nondefect portions of the polycrystalline material surface. An X-Y translation stage for mounting the polycrystalline material and signal processing and computer equipment accommodate raster mapping, recording, and displaying of respective dislocation and grain boundary defect densities. A special etch procedure is included, which prepares the polycrystalline material surface to produce distinguishable intermediate and near specular light scattering in patterns that have statistical relevance to the dislocation and grain boundary defect densities. A reflectance measurement of the piece of material is obtained by adding together the signals from the optical detection devices. In the case where the piece of material includes a photovoltaic device, the current induced in the device by the illuminating light can be measured with a current sensing amplifier after the light integrating sphere is moved away from the device. 22 figs.

  2. Advanced research workshop: nuclear materials safety

    SciTech Connect

    Jardine, L J; Moshkov, M M

    1999-01-28

    The Advanced Research Workshop (ARW) on Nuclear Materials Safety held June 8-10, 1998, in St. Petersburg, Russia, was attended by 27 Russian experts from 14 different Russian organizations, seven European experts from six different organizations, and 14 U.S. experts from seven different organizations. The ARW was conducted at the State Education Center (SEC), a former Minatom nuclear training center in St. Petersburg. Thirty-three technical presentations were made using simultaneous translations. These presentations are reprinted in this volume as a formal ARW Proceedings in the NATO Science Series. The representative technical papers contained here cover nuclear material safety topics on the storage and disposition of excess plutonium and high enriched uranium (HEU) fissile materials, including vitrification, mixed oxide (MOX) fuel fabrication, plutonium ceramics, reprocessing, geologic disposal, transportation, and Russian regulatory processes. This ARW completed discussions by experts of the nuclear materials safety topics that were not covered in the previous, companion ARW on Nuclear Materials Safety held in Amarillo, Texas, in March 1997. These two workshops, when viewed together as a set, have addressed most nuclear material aspects of the storage and disposition operations required for excess HEU and plutonium. As a result, specific experts in nuclear materials safety have been identified, know each other from their participation in t he two ARW interactions, and have developed a partial consensus and dialogue on the most urgent nuclear materials safety topics to be addressed in a formal bilateral program on t he subject. A strong basis now exists for maintaining and developing a continuing dialogue between Russian, European, and U.S. experts in nuclear materials safety that will improve the safety of future nuclear materials operations in all the countries involved because of t he positive synergistic effects of focusing these diverse backgrounds of

  3. Rhombohedral cubic semiconductor materials on trigonal substrate with single crystal properties and devices based on such materials

    NASA Technical Reports Server (NTRS)

    Park, Yeonjoon (Inventor); Choi, Sang Hyouk (Inventor); King, Glen C. (Inventor); Elliott, James R. (Inventor)

    2012-01-01

    Growth conditions are developed, based on a temperature-dependent alignment model, to enable formation of cubic group IV, group II-V and group II-VI crystals in the [111] orientation on the basal (0001) plane of trigonal crystal substrates, controlled such that the volume percentage of primary twin crystal is reduced from about 40% to about 0.3%, compared to the majority single crystal. The control of stacking faults in this and other embodiments can yield single crystalline semiconductors based on these materials that are substantially without defects, or improved thermoelectric materials with twinned crystals for phonon scattering while maintaining electrical integrity. These methods can selectively yield a cubic-on-trigonal epitaxial semiconductor material in which the cubic layer is substantially either directly aligned, or 60 degrees-rotated from, the underlying trigonal material.

  4. Implications of smart materials in advanced prosthetics

    NASA Astrophysics Data System (ADS)

    Lenoe, Edward M.; Radicic, William N.; Knapp, Michael S.

    1994-05-01

    This research reviews common implant materials and suggests smart materials that may be used as substitutes. Current prosthetic technology, including artificial limbs, joints, and soft and hard tissue, falls short in comprehensive characterization of the chemo-mechanics and materials relationships of the natural tissues and their prosthetic materials counterparts. Many of these unknown chemo-mechanical properties in natural tissue systems maintain cooperative function that allows for optimum efficiency in performance and healing. Traditional prosthetic devices have not taken into account the naturally occurring electro-chemo-mechanical stress- strain relationships that normally exist in a tissue system. Direct mechanical deformation of tissue and cell membrane as a possible use of smart materials may lead to improved prosthetic devices once the mechanosensory systems in living tissues are identified and understood. Smart materials may aid in avoiding interfacial atrophy which is a common cause of prosthetic failure. Finally, we note that advanced composite materials have not received sufficient attention, they should be more widely used in prosthetics. Their structural efficiency allows design and construction of truly efficient bionic devices.

  5. Theoretical discovery of stable structures of group III-V monolayers: The materials for semiconductor devices

    SciTech Connect

    Suzuki, Tatsuo

    2015-11-23

    Group III-V compounds are very important as the materials of semiconductor devices. Stable structures of the monolayers of group III-V binary compounds have been discovered by using first-principles calculations. The primitive unit cell of the discovered structures is a rectangle, which includes four group-III atoms and four group-V atoms. A group-III atom and its three nearest-neighbor group-V atoms are placed on the same plane; however, these connections are not the sp{sup 2} hybridization. The bond angles around the group-V atoms are less than the bond angle of sp{sup 3} hybridization. The discovered structure of GaP is an indirect transition semiconductor, while the discovered structures of GaAs, InP, and InAs are direct transition semiconductors. Therefore, the discovered structures of these compounds have the potential of the materials for semiconductor devices, for example, water splitting photocatalysts. The discovered structures may become the most stable structures of monolayers which consist of other materials.

  6. Recent Developments in p-Type Oxide Semiconductor Materials and Devices.

    PubMed

    Wang, Zhenwei; Nayak, Pradipta K; Caraveo-Frescas, Jesus A; Alshareef, Husam N

    2016-05-01

    The development of transparent p-type oxide semiconductors with good performance may be a true enabler for a variety of applications where transparency, power efficiency, and greater circuit complexity are needed. Such applications include transparent electronics, displays, sensors, photovoltaics, memristors, and electrochromics. Hence, here, recent developments in materials and devices based on p-type oxide semiconductors are reviewed, including ternary Cu-bearing oxides, binary copper oxides, tin monoxide, spinel oxides, and nickel oxides. The crystal and electronic structures of these materials are discussed, along with approaches to enhance valence-band dispersion to reduce effective mass and increase mobility. Strategies to reduce interfacial defects, off-state current, and material instability are suggested. Furthermore, it is shown that promising progress has been made in the performance of various types of devices based on p-type oxides. Several innovative approaches exist to fabricate transparent complementary metal oxide semiconductor (CMOS) devices, including novel device fabrication schemes and utilization of surface chemistry effects, resulting in good inverter gains. However, despite recent developments, p-type oxides still lag in performance behind their n-type counterparts, which have entered volume production in the display market. Recent successes along with the hurdles that stand in the way of commercial success of p-type oxide semiconductors are presented. PMID:26879813

  7. ZnO glass-ceramics: An alternative way to produce semiconductor materials

    SciTech Connect

    Masai, Hirokazu; Toda, Tatsuya; Ueno, Takahiro; Takahashi, Yoshihiro; Fujiwara, Takumi

    2009-04-13

    Fabrication of transparent glass-ceramics containing ZnO nanocrystallites has been reported. The obtained material shows UV-excited photoluminescence consisting of both broad emission in the visible region and the free exciton emission at 3.28 eV. Since the observed emission depends on the precipitated state of ZnO in the glass matrix, the glass-ceramics obtained by this way will give an alternative selection of semiconductor material with unique optical and electronic functions.

  8. Electron energy loss spectroscopy in advanced materials

    SciTech Connect

    Zaluzec, N.J.

    1991-01-01

    The combination of a Transmission Electron Microscope (TEM) with an electron energy loss spectrometer (EELS) yields a powerful tool for the microcharacterization of materials. However, the application of this technique to advanced materials problems can only be fully appreciated when the information obtained using EELS is related to that obtained from other analytical spectroscopies. In this chapter, we briefly discuss the relative performance of X-ray, Auger and Photoelectron Spectroscopies with EELS pointing out the limitations and merits of each. This comparison is followed by examples of the application of EELS to investigations involving high {Tc} superconductors, artificial metallic superlattices, amorphous magnetic materials and the characterization of metallic hydride phases. 14 refs., 22 figs.

  9. Automotive applications for advanced composite materials

    NASA Technical Reports Server (NTRS)

    Deutsch, G. C.

    1978-01-01

    A description is presented of nonaerospace applications for advanced composite materials with special emphasis on the automotive applications. The automotive industry has to satisfy exacting requirements to reduce the average fuel consumption of cars. A feasible approach to accomplish this involves the development of composites cars with a total weight of 2400 pounds and a fuel consumption of 33 miles per gallon. In connection with this possibility, the automotive companies have started to look seriously at composite materials. The aerospace industry has over the past decade accumulated a considerable data base on composite materials and this is being made available to the nonaerospace sector. However, the automotive companies will place prime emphasis on low cost resins which lend themselves to rapid fabrication techniques.

  10. International Symposium on Advanced Materials (ISAM 2013)

    NASA Astrophysics Data System (ADS)

    2014-06-01

    This proceeding is a compilation of peer reviewed papers presented at the 13th International Symposium on Advanced Materials (ISAM 2013) held from September 23-27, 2013, at Islamabad, Pakistan. In my capacity as ISAM-2013 Secretary, I feel honoured that the symposium has ended on a positive note. The ever increasing changes and intricacies that characterize modern industry necessitate a growing demand for technical information on advanced materials. ISAM and other similar forums serve to fulfill this need. The five day deliberations of ISAM 2013, consisted of 19 technical sessions and 2 poster sessions. In all, 277 papers were presented, inclusive of 80 contributory, invited and oral presentations. The symposium also hosted panel discussions led by renowned scientists and eminent researchers from foreign as well as local institutes. The ultimate aim of this proceeding is to record in writing the new findings in the field of advanced materials. I hope that the technical data available in this publication proves valuable to young scientists and researchers working in this area of science. At the same time, I wish to acknowledge Institute of Physics (IOP) Publishing UK, for accepting the research papers from ISAM-2013 for publication in the IOP Conference Series: Materials Science and Engineering. The proceeding will be available on the IOP website as an online open access document. I am profoundly thankful to the Symposium Chairman for his steadfast support and valuable guidance without which ISAM 2013 could not have been the mega event that it turned out to be. My gratitude to all our distinguished participants, session chairs/co-chairs, and reviewers for their active role in the symposium. I appreciate the entire organizing committee for the zest and ardor with which each committee fulfilled its obligations to ISAM. Last yet not the least, my thankfulness goes to all our sponsors for wilfully financing the event. Dr. Sara Qaisar Symposium Secretary Further

  11. Advanced development of double-injection, deep-impurity semiconductor switches

    NASA Technical Reports Server (NTRS)

    Hanes, M. H.

    1987-01-01

    Deep-impurity, double-injection devices, commonly refered to as (DI) squared devices, represent a class of semiconductor switches possessing a very high degree of tolerance to electron and neutron irradiation and to elevated temperature operation. These properties have caused them to be considered as attractive candidates for space power applications. The design, fabrication, and testing of several varieties of (DI) squared devices intended for power switching are described. All of these designs were based upon gold-doped silicon material. Test results, along with results of computer simulations of device operation, other calculations based upon the assumed mode of operation of (DI) squared devices, and empirical information regarding power semiconductor device operation and limitations, have led to the conculsion that these devices are not well suited to high-power applications. When operated in power circuitry configurations, they exhibit high-power losses in both the off-state and on-state modes. These losses are caused by phenomena inherent to the physics and material of the devices and cannot be much reduced by device design optimizations. The (DI) squared technology may, however, find application in low-power functions such as sensing, logic, and memory, when tolerance to radiation and temperature are desirable (especially is device performance is improved by incorporation of deep-level impurities other than gold.

  12. ASME Material Challenges for Advanced Reactor Concepts

    SciTech Connect

    Piyush Sabharwall; Ali Siahpush

    2013-07-01

    This study presents the material Challenges associated with Advanced Reactor Concept (ARC) such as the Advanced High Temperature Reactor (AHTR). ACR are the next generation concepts focusing on power production and providing thermal energy for industrial applications. The efficient transfer of energy for industrial applications depends on the ability to incorporate cost-effective heat exchangers between the nuclear heat transport system and industrial process heat transport system. The heat exchanger required for AHTR is subjected to a unique set of conditions that bring with them several design challenges not encountered in standard heat exchangers. The corrosive molten salts, especially at higher temperatures, require materials throughout the system to avoid corrosion, and adverse high-temperature effects such as creep. Given the very high steam generator pressure of the supercritical steam cycle, it is anticipated that water tube and molten salt shell steam generators heat exchanger will be used. In this paper, the ASME Section III and the American Society of Mechanical Engineers (ASME) Section VIII requirements (acceptance criteria) are discussed. Also, the ASME material acceptance criteria (ASME Section II, Part D) for high temperature environment are presented. Finally, lack of ASME acceptance criteria for thermal design and analysis are discussed.

  13. Materials processing threshold report. 1: Semiconductor crystals for infrared detectors

    NASA Technical Reports Server (NTRS)

    Sager, E. V.; Thompson, T. R.; Nagler, R. G.

    1980-01-01

    An extensive search was performed of the open literature pertaining to infrared detectors to determine what constitutes a good detector and in what way performance is limited by specific material properties. Interviews were conducted with a number of experts in the field to assess their perceptions of the state of the art and of the utility of zero-gravity processing. Based on this information base and on a review of NASA programs in crystal growth and infrared sensors, NASA program goals were reassessed and suggestions are presented as to possible joint and divergent efforts between NASA and DOD.

  14. Strain-based control of crystal anisotropy for perovskite oxides on semiconductor-based material

    DOEpatents

    McKee, Rodney Allen; Walker, Frederick Joseph

    2000-01-01

    A crystalline structure and a semiconductor device includes a substrate of a semiconductor-based material and a thin film of an anisotropic crystalline material epitaxially arranged upon the surface of the substrate so that the thin film couples to the underlying substrate and so that the geometries of substantially all of the unit cells of the thin film are arranged in a predisposed orientation relative to the substrate surface. The predisposition of the geometries of the unit cells of the thin film is responsible for a predisposed orientation of a directional-dependent quality, such as the dipole moment, of the unit cells. The predisposed orientation of the unit cell geometries are influenced by either a stressed or strained condition of the lattice at the interface between the thin film material and the substrate surface.

  15. The recycling dilemma for advanced materials use: Automobile materials substitution

    SciTech Connect

    Field, F.R. III; Clark, J.P. )

    1991-01-01

    This paper discusses the difficulties associated with imposing recycling imperatives upon advanced materials development by examining the case of automotive materials substitution and its impacts upon the recyclability of the automobile. Parallels are drawn between today's issues, which focus upon the recyclability of the increasing polymeric fraction in automobile shredder fluff, and the junked automobile problem of the 1960's, when the problem of abandoned automobiles became a part of the environmental and legislative agenda in the US and overseas. In the 1960's, both the source and the resolution of the junk automobile problem arose through a confluence of technological and economic factors, rather than through any set of regulatory influences. The rise of electric arc furnace steelmaking and the development of the automobile shredder were sufficient to virtually eliminate the problem - so much so that today's problems are incorrectly viewed as novelties. Today's automobile recycling problem again derives from technological and economic factors, but regulatory influences have spurred some of them. While there are no lack of technological solutions to the problem of automobile shredder fluff, none of these solutions yet provides scrap processors with the kind of profit opportunity necessary to implement them. In some ways, it is implicit in advanced materials markets that there is little to no demand for recycled forms of these materials, and, in the absence of these markets, there are few reasons to expect that the solution to today's problems will be quite so neat.

  16. Advanced Technology Composite Fuselage - Materials and Processes

    NASA Technical Reports Server (NTRS)

    Scholz, D. B.; Dost, E. F.; Flynn, B. W.; Ilcewicz, L. B.; Nelson, K. M.; Sawicki, A. J.; Walker, T. H.; Lakes, R. S.

    1997-01-01

    The goal of Boeing's Advanced Technology Composite Aircraft Structures (ATCAS) program was to develop the technology required for cost and weight efficient use of composite materials in transport fuselage structure. This contractor report describes results of material and process selection, development, and characterization activities. Carbon fiber reinforced epoxy was chosen for fuselage skins and stiffening elements and for passenger and cargo floor structures. The automated fiber placement (AFP) process was selected for fabrication of monolithic and sandwich skin panels. Circumferential frames and window frames were braided and resin transfer molded (RTM'd). Pultrusion was selected for fabrication of floor beams and constant section stiffening elements. Drape forming was chosen for stringers and other stiffening elements. Significant development efforts were expended on the AFP, braiding, and RTM processes. Sandwich core materials and core edge close-out design concepts were evaluated. Autoclave cure processes were developed for stiffened skin and sandwich structures. The stiffness, strength, notch sensitivity, and bearing/bypass properties of fiber-placed skin materials and braided/RTM'd circumferential frame materials were characterized. The strength and durability of cocured and cobonded joints were evaluated. Impact damage resistance of stiffened skin and sandwich structures typical of fuselage panels was investigated. Fluid penetration and migration mechanisms for sandwich panels were studied.

  17. Modeling of Total Ionizing Dose Effects in Advanced Complementary Metal-Oxide-Semiconductor Technologies

    NASA Astrophysics Data System (ADS)

    Sanchez Esqueda, Ivan

    2011-12-01

    The increased use of commercial complementary metal-oxide-semiconductor (CMOS) technologies in harsh radiation environments has resulted in a new approach to radiation effects mitigation. This approach utilizes simulation to support the design of integrated circuits (ICs) to meet targeted tolerance specifications. Modeling the deleterious impact of ionizing radiation on ICs fabricated in advanced CMOS technologies requires understanding and analyzing the basic mechanisms that result in buildup of radiation-induced defects in specific sensitive regions. Extensive experimental studies have demonstrated that the sensitive regions are shallow trench isolation (STI) oxides. Nevertheless, very little work has been done to model the physical mechanisms that result in the buildup of radiation-induced defects and the radiation response of devices fabricated in these technologies. A comprehensive study of the physical mechanisms contributing to the buildup of radiation-induced oxide trapped charges and the generation of interface traps in advanced CMOS devices is presented in this dissertation. The basic mechanisms contributing to the buildup of radiation-induced defects are explored using a physical model that utilizes kinetic equations that captures total ionizing dose (TID) and dose rate effects in silicon dioxide (SiO2). These mechanisms are formulated into analytical models that calculate oxide trapped charge density (Not) and interface trap density (Nit) in sensitive regions of deep-submicron devices. Experiments performed on field-oxide-field-effect-transistors (FOXFETs) and metal-oxide-semiconductor (MOS) capacitors permit investigating TID effects and provide a comparison for the radiation response of advanced CMOS devices. When used in conjunction with closed-form expressions for surface potential, the analytical models enable an accurate description of radiation-induced degradation of transistor electrical characteristics. In this dissertation, the incorporation

  18. Advanced Materials Laboratory User Test Planning Guide

    NASA Technical Reports Server (NTRS)

    Orndoff, Evelyne

    2012-01-01

    Test process, milestones and inputs are unknowns to first-time users of the Advanced Materials Laboratory. The User Test Planning Guide aids in establishing expectations for both NASA and non-NASA facility customers. The potential audience for this guide includes both internal and commercial spaceflight hardware/software developers. It is intended to assist their test engineering personnel in test planning and execution. Material covered includes a roadmap of the test process, roles and responsibilities of facility and user, major milestones, facility capabilities, and inputs required by the facility. Samples of deliverables, test article interfaces, and inputs necessary to define test scope, cost, and schedule are included as an appendix to the guide.

  19. Development of advanced composite ceramic tool material

    SciTech Connect

    Huang Chuanzhen; Ai Xing

    1996-08-01

    An advanced ceramic cutting tool material has been developed by means of silicon carbide whisker (SiCw) reinforcement and silicon carbide particle (SiCp) dispersion. The material has the advantage of high bending strength and fracture toughness. Compared with the mechanical properties of Al{sub 2}O{sub 3}/SiCp(AP), Al{sub 2}O{sub 3}/SiCw(JX-1), and Al{sub 2}O{sub 3}/SiCp/SiCw(JX-2-I), it confirms that JX-2-I composites have obvious additive effects of both reinforcing and toughening. The reinforcing and toughening mechanisms of JX-2-I composites were studied based on the analysis of thermal expansion mismatch and the observation of microstructure. The cutting performance of JX-2-I composites was investigated primarily.

  20. On the fracture toughness of advanced materials

    SciTech Connect

    Launey, Maximilien E.; Ritchie, Robert O.

    2008-11-24

    Few engineering materials are limited by their strength; rather they are limited by their resistance to fracture or fracture toughness. It is not by accident that most critical structures, such as bridges, ships, nuclear pressure vessels and so forth, are manufactured from materials that are comparatively low in strength but high in toughness. Indeed, in many classes of materials, strength and toughness are almost mutually exclusive. In the first instance, such resistance to fracture is a function of bonding and crystal structure (or lack thereof), but can be developed through the design of appropriate nano/microstructures. However, the creation of tough microstructures in structural materials, i.e., metals, polymers, ceramics and their composites, is invariably a compromise between resistance to intrinsic damage mechanisms ahead of the tip of a crack (intrinsic toughening) and the formation of crack-tip shielding mechanisms which principally act behind the tip to reduce the effective 'crack-driving force' (extrinsic toughening). Intrinsic toughening is essentially an inherent property of a specific microstructure; it is the dominant form of toughening in ductile (e.g., metallic) materials. However, for most brittle (e.g., ceramic) solids, and this includes many biological materials, it is largely ineffective and toughening conversely must be developed extrinsically, by such shielding mechanisms as crack bridging. From a fracture mechanics perspective, this results in toughening in the form of rising resistance-curve behavior where the fracture resistance actually increases with crack extension. The implication of this is that in many biological and high-strength advanced materials, toughness is developed primarily during crack growth and not for crack initiation. This is an important realization yet is still rarely reflected in the way that toughness is measured, which is invariably involves the use of single-value (crack-initiation) parameters such as the

  1. Advanced materials synthesis at the nano and macro scale: An electrochemical approach

    NASA Astrophysics Data System (ADS)

    Arvin, Charles Leon

    There are many environmentally demanding and specific applications which require synthesis of advanced materials which are either difficult to make or extremely expensive on a large scale using standard methods such as integrated circuit fabrication. These applications can range from the need to modify the surface properties of an alloy in order to inhibit corrosion processes to reducing the size of a particular metal or semiconductor in order to confine electrons, which occurs as length scale is reduced to between 1--20 nm. There are a multitude of tools, techniques and processing steps that can be utilized to synthesize these materials. Electrochemical techniques offer an inexpensive method that utilizes the large installed manufacturing base to modify the surface of materials and to produce materials with necessary sizes. A methodology to electrochemically produce advanced materials was followed that (1) identified applications where advanced materials were necessary, (2) identified electrochemical techniques that could produce those materials with appropriate templates providing the necessary control over size and geometry, (3) developed a general framework and/or simple one-dimensional model to understand what factors were necessary to control or manipulate in order to produce an advanced material with the proper material performance and (4) finally, these materials were synthesized and evaluated using electrochemical and surface analysis techniques. The versatility of this approach was shown through four applications that included (1) elimination or minimization of the environmentally hazardous Cr(III)/Cr(VI) redox couple from conversion coating formulations, (2) electrophoretic synthesis of ordered nano-arrays from colloidal materials for use as sensors, (3) synthesis of two- and three-dimensional electrodes for fuel cell applications, and (4) development of a process to produce semiconductor wires for improvements in photovoltaic devices and infrared

  2. NREL Advances Spillover Materials for Hydrogen Storage (Fact Sheet)

    SciTech Connect

    Not Available

    2010-12-01

    This fact sheet describes NREL's accomplishments in advancing spillover materials for hydrogen storage and improving the reproducible synthesis, long-term durability, and material costs of hydrogen storage materials. Work was performed by NREL's Chemical and Materials Science Center.

  3. Recent Advances in Electron Tomography: TEM and HAADF-STEM Tomography for Materials Science and IC Applications

    SciTech Connect

    Kubel, C; Voigt, A; Schoenmakers, R; Otten, M; Su, D; Lee, T; Carlsson, A; Engelmann, H; Bradley, J

    2005-11-09

    Electron tomograph tomography is a well y well-established technique for three-dimensional structure determination of (almost) amorphous specimens in life science applications. With the recent advances in nanotechnology and the semiconductor industry, there is also an increasing need for high-resolution 3D structural information in physical sciences. In this paper, we evaluate the capabilities and limitations of TEM and HAADF-STEM tomography for the 3D structural characterization of partially crystalline to highly crystalline materials. Our analysis of catalysts, a hydrogen storage material, and different semiconductor devices shows that features with a diameter as small as 1-2 nm can be resolved in 3D by electron tomography. For partially crystalline materials with small single crystalline domains, TEM tomography provides reliable 3D structural information. HAADF-STEM tomography is more versatile and can also be used for high-resolution 3D imaging of highly crystalline materials such as semiconductor devices.

  4. Characterization and damage evaluation of advanced materials

    NASA Astrophysics Data System (ADS)

    Mitrovic, Milan

    Mechanical characterization of advanced materials, namely magnetostrictive and graphite/epoxy composite materials, is studied in this dissertation, with an emphasis on damage evaluation of composite materials. Consequently, the work in this dissertation is divided into two parts, with the first part focusing on characterization of the magneto-elastic response of magnetostrictlve materials, while the second part of this dissertation describes methods for evaluating the fatigue damage in composite materials. The objective of the first part of this dissertation is to evaluate a nonlinear constitutive relation which more closely depict the magneto-elastic response of magnetostrictive materials. Correlation between experimental and theoretical values indicate that the model adequately predicts the nonlinear strain/field relations in specific regimes, and that the currently employed linear approaches are inappropriate for modeling the response of this material in a structure. The objective of the second part of this dissertation is to unravel the complexities associated with damage events associated with polymeric composite materials. The intent is to characterize and understand the influence of impact and fatigue induced damage on the residual thermo-mechanical properties and compressive strength of composite systems. The influence of fatigue generated matrix cracking and micro-delaminations on thermal expansion coefficient (TEC) and compressive strength is investigated for woven graphite/epoxy composite system. Experimental results indicate that a strong correlation exists between TEC and compressive strength measurements, indicating that TEC measurements can be used as a damage metric for this material systems. The influence of delaminations on the natural frequencies and mode shapes of a composite laminate is also investigated. Based on the changes of these parameters as a function of damage, a methodology for determining the size and location of damage is suggested

  5. Improvement of process control using wafer geometry for enhanced manufacturability of advanced semiconductor devices

    NASA Astrophysics Data System (ADS)

    Lee, Honggoo; Lee, Jongsu; Kim, Sang Min; Lee, Changhwan; Han, Sangjun; Kim, Myoungsoo; Kwon, Wontaik; Park, Sung-Ki; Vukkadala, Pradeep; Awasthi, Amartya; Kim, J. H.; Veeraraghavan, Sathish; Choi, DongSub; Huang, Kevin; Dighe, Prasanna; Lee, Cheouljung; Byeon, Jungho; Dey, Soham; Sinha, Jaydeep

    2015-03-01

    Aggressive advancements in semiconductor technology have resulted in integrated chip (IC) manufacturing capability at sub-20nm half-pitch nodes. With this, lithography overlay error budgets are becoming increasingly stringent. The delay in EUV lithography readiness for high volume manufacturing (HVM) and the need for multiple-patterning lithography with 193i technology has further amplified the overlay issue. Thus there exists a need for technologies that can improve overlay errors in HVM. The traditional method for reducing overlay errors predominantly focused on improving lithography scanner printability performance. However, processes outside of the lithography sector known as processinduced overlay errors can contribute significantly to the total overlay at the current requirements. Monitoring and characterizing process-induced overlay has become critical for advanced node patterning. Recently a relatively new technique for overlay control that uses high-resolution wafer geometry measurements has gained significance. In this work we present the implementation of this technique in an IC fabrication environment to monitor wafer geometry changes induced across several points in the process flow, of multiple product layers with critical overlay performance requirement. Several production wafer lots were measured and analyzed on a patterned wafer geometry tool. Changes induced in wafer geometry as a result of wafer processing were related to down-stream overlay error contribution using the analytical in-plane distortion (IPD) calculation model. Through this segmentation, process steps that are major contributors to down-stream overlay were identified. Subsequent process optimization was then isolated to those process steps where maximum benefit might be realized. Root-cause for the within-wafer, wafer-to-wafer, tool-to-tool, and station-to-station variations observed were further investigated using local shape curvature changes - which is directly related to

  6. Heterogeneous reaction mechanisms and kinetics relevant to the CVD of semiconductor materials

    SciTech Connect

    Creighton, J.R.; Coltrin, M.E.

    1994-03-01

    This report documents the state of the art in experimental and theoretical techniques for determining reaction mechanisms and chemical kinetics of heterogeneous reactions relevant to the chemical vapor deposition of semiconductor materials. It summarizes the most common ultra-high vacuum experimental techniques that are used and the types of rate information available from each. Several case studies of specific chemical systems relevant to the microelectronics industry are described. Theoretical methods for calculating heterogeneous reaction rate constants are also summarized.

  7. Static sublimation purification process and characterization of LiZnAs semiconductor material

    NASA Astrophysics Data System (ADS)

    Montag, Benjamin W.; Reichenberger, Michael A.; Edwards, Nathaniel S.; Ugorowski, Philip B.; Sunder, Madhana; Weeks, Joseph; McGregor, Douglas S.

    2016-03-01

    Refinement of the class AIBIICV materials continue as a candidate for solid-state neutron detectors. Such a device would have greater efficiency, in a compact form, than present day gas-filled 3He and 10BF3 detectors. The 6Li(n,t)4He reaction yields a total Q value of 4.78 MeV, larger than 10B, and easily identified above background radiations. Hence, devices composed of either natural Li (nominally 7.5% 6Li) or enriched 6Li (usually 95% 6Li) may provide a semiconductor material for compact high efficiency neutron detectors. A sub-branch of the III-V semiconductors, the filled tetrahedral compounds, AIBIICV, known as Nowotny-Juza compounds, are known for their desirable cubic crystal structure. Starting material was synthesized by equimolar portions of Li, Zn, and As sealed under vacuum (10-6 Torr) in quartz ampoules with a boron nitride lining, and reacted in a compounding furnace [1]. The synthesized material showed signs of high impurity levels from material and electrical property characterization. In the present work, a static vacuum sublimation of synthesized LiZnAs loaded in a quartz vessel was performed to help purify the synthesized material. The chemical composition of the sublimed material and remains material was confirmed by Inductively Coupled Plasma Optical Emission Spectroscopy (ICP-OES). Lithium was not detected in the sublimed material, however, near stoichiometric amounts of each constituent element were found in the remains material for LiZnAs. X-ray diffraction phase identification scans of the remains material and sublimed material were compared, and further indicated the impurity materials were removed from the synthesized materials. The remaining powder post the sublimation process showed characteristics of a higher purity ternary compound.

  8. Conjugated polymers/semiconductor nanocrystals hybrid materials--preparation, electrical transport properties and applications.

    PubMed

    Reiss, Peter; Couderc, Elsa; De Girolamo, Julia; Pron, Adam

    2011-02-01

    This critical review discusses specific preparation and characterization methods applied to hybrid materials consisting of π-conjugated polymers (or oligomers) and semiconductor nanocrystals. These materials are of great importance in the quickly growing field of hybrid organic/inorganic electronics since they can serve as active components of photovoltaic cells, light emitting diodes, photodetectors and other devices. The electronic energy levels of the organic and inorganic components of the hybrid can be tuned individually and thin hybrid films can be processed using low cost solution based techniques. However, the interface between the hybrid components and the morphology of the hybrid directly influences the generation, separation and transport of charge carriers and those parameters are not easy to control. Therefore a large variety of different approaches for assembling the building blocks--conjugated polymers and semiconductor nanocrystals--has been developed. They range from their simple blending through various grafting procedures to methods exploiting specific non-covalent interactions between both components, induced by their tailor-made functionalization. In the first part of this review, we discuss the preparation of the building blocks (nanocrystals and polymers) and the strategies for their assembly into hybrid materials' thin films. In the second part, we focus on the charge carriers' generation and their transport within the hybrids. Finally, we summarize the performances of solar cells using conjugated polymer/semiconductor nanocrystals hybrids and give perspectives for future developments. PMID:21152569

  9. Materials for advanced ultrasupercritical steam turbines

    SciTech Connect

    Purgert, Robert; Shingledecker, John; Saha, Deepak; Thangirala, Mani; Booras, George; Powers, John; Riley, Colin; Hendrix, Howard

    2015-12-01

    The U.S. Department of Energy (DOE) and the Ohio Coal Development Office (OCDO) have sponsored a project aimed at identifying, evaluating, and qualifying the materials needed for the construction of the critical components of coal-fired power plants capable of operating at much higher efficiencies than the current generation of supercritical plants. This increased efficiency is expected to be achieved principally through the use of advanced ultrasupercritical (A-USC) steam conditions. A limiting factor in this can be the materials of construction for boilers and for steam turbines. The overall project goal is to assess/develop materials technology that will enable achieving turbine throttle steam conditions of 760°C (1400°F)/35MPa (5000 psi). This final technical report covers the research completed by the General Electric Company (GE) and Electric Power Research Institute (EPRI), with support from Oak Ridge National Laboratory (ORNL) and the National Energy Technology Laboratory (NETL) – Albany Research Center, to develop the A-USC steam turbine materials technology to meet the overall project goals. Specifically, this report summarizes the industrial scale-up and materials property database development for non-welded rotors (disc forgings), buckets (blades), bolting, castings (needed for casing and valve bodies), casting weld repair, and casting to pipe welding. Additionally, the report provides an engineering and economic assessment of an A-USC power plant without and with partial carbon capture and storage. This research project successfully demonstrated the materials technology at a sufficient scale and with corresponding materials property data to enable the design of an A-USC steam turbine. The key accomplishments included the development of a triple-melt and forged Haynes 282 disc for bolted rotor construction, long-term property development for Nimonic 105 for blading and bolting, successful scale-up of Haynes 282 and Nimonic 263 castings using

  10. Polymers as advanced materials for desiccant applications

    SciTech Connect

    Czanderna, A.W.

    1990-12-01

    This research is concerned with solid materials used as desiccants for desiccant cooling systems (DCSs) that process water vapor in an atmosphere to produce cooling. Background information includes an introduction to DCSs and the role of the desiccant as a system component. The water vapor sorption performance criteria used for screening the modified polymers prepared include the water sorption capacity from 5% to 80% relative humidity (R.H.), isotherm shape, and rate of adsorption and desorption. Measurements are presented for the sorption performance of modified polymeric advanced desiccant materials with the quartz crystal microbalance. Isotherms of polystyrene sulfonic acid (PSSA) taken over a 5-month period show that the material has a dramatic loss in capacity and that the isotherm shape is time dependent. The adsorption and desorption kinetics for PSSA and all the ionic salts of it studied are easily fast enough for commercial DCS applications with a wheel rotation speed of 6 min per revolution. Future activities for the project are addressed, and a 5-year summary of the project is included as Appendix A. 34 refs., 20 figs., 3 tabs.

  11. Visible Light Enabled Photocatalytic Splitting of Water over Spatially Isolated Semiconductors Supported Mesoporous Materials

    NASA Astrophysics Data System (ADS)

    Peng, Rui

    Hydrogen generation from photocatalytic splitting of water is an ideal scenario that possesses promise for the sustainable development of human society and the establishment of the ultimate "green," infinitely renewable energy system. This work contains a series of novel photocatalytic systems in which the photoactive chromophores and/or the co-catalysts were incorporated into highly periodically cubic-phased MCM-48 mesoporous materials to achieve significantly higher photocatalytic efficiencies compared with conventional semiconductor photocatalysts. Cubic-phased MCM-48 mesoporous materials were chosen as supports to accommodate the photoactive species throughout the entire work. Several unique and iconic properties of these materials, such as large surface area, highly uniform mesoscale pores arrayed in a long-range periodicity, and an interconnected network of three-dimensional sets of pores that were recognized as positive parameters facilitated the photogenerated charge transfer and promoted the photocatalytic performance of the encapsulated photoactive species. It was validated that in the CdS/TiO2-incorporated MCM-48 photocatalytic system, the solar hydrogen conversion efficiency was prevalently governed by the photogenerated electron injection efficiency from the CdS conduction band to that of TiO2. The use of MCM-48 mesoporous host materials enabled the high and even dispersion of both CdS and TiO 2 so that the intimate and sufficient contact between CdS and TiO 2 was realized. In addition, with the presence of both TiO2 and MCM-48 mesoporous support, the photostability of CdS species was dramatically enhanced compared with that of bare CdS or CdS-incorporated MCM-48 photocatalysts. In advance, by loading the RuO2 co-catalyst into the CdS/TiO 2-incorporated MCM-48 photocatalytic system, the photocatalytic splitting of pure water to generate both hydrogen and oxygen under visible light illumination was achieved. In the various Pd-assisted, TiO2-incorporated

  12. Thermal fatigue durability for advanced propulsion materials

    NASA Technical Reports Server (NTRS)

    Halford, Gary R.

    1989-01-01

    A review is presented of thermal and thermomechanical fatigue (TMF) crack initiation life prediction and cyclic constitutive modeling efforts sponsored recently by the NASA Lewis Research Center in support of advanced aeronautical propulsion research. A brief description is provided of the more significant material durability models that were created to describe TMF fatigue resistance of both isotropic and anisotropic superalloys, with and without oxidation resistant coatings. The two most significant crack initiation models are the cyclic damage accumulation model and the total strain version of strainrange partitioning. Unified viscoplastic cyclic constitutive models are also described. A troika of industry, university, and government research organizations contributed to the generation of these analytic models. Based upon current capabilities and established requirements, an attempt is made to project which TMF research activities most likely will impact future generation propulsion systems.

  13. Fabrication of porous materials (metal, metal oxide and semiconductor) through an aerosol-assisted route

    NASA Astrophysics Data System (ADS)

    Sohn, Hiesang

    Porous materials have gained attraction owing to their vast applications in catalysts, sensors, energy storage devices, bio-devices and other areas. To date, various porous materials were synthesized through soft and hard templating approaches. However, a general synthesis method for porous non-oxide materials, metal alloys and semiconductors with tunable structure, composition and morphology has not been developed yet. To address this challenge, this thesis presents an aerosol method towards the synthesis of such materials and their applications for catalysis, hydrogen storage, Li-batteries and photo-catalysis. The first part of this thesis presents the synthesis of porous metals, metal oxides, and semiconductors with controlled pore structure, crystalline structure and morphology. In these synthesis processes, metal salts and organic ligands were employed as precursors to create porous metal-carbon frameworks. During the aerosol process, primary metal clusters and nanoparticles were formed, which were coagulated/ aggregated forming the porous particles. Various porous particles, such as those of metals (e.g., Ni, Pt, Co, Fe, and Ni xPt(1-x)), metal oxides (e.g., Fe3O4 and SnO2) and semiconductors (e.g., CdS, CuInS2, CuInS 2x-ZnS(1-x), and CuInS2x-TiO2(1-x)) were synthesized. The morphology, porous structure and crystalline structure of the particles were regulated through both templating and non-templating methods. The second part of this thesis explores the applications of these materials, including propylene hydrogenation and H2 uptake capacity of porous Ni, NiPt alloys and Ni-Pt composites, Li-storage of Fe3O4 and SnO2, photodegradation of CuInS2-based semiconductors. The effects of morphology, compositions, and porous structure on the device performance were systematically investigated. Overall, this dissertation work unveiled a simple synthesis approach for porous particles of metals, metal alloys, metal oxides, and semiconductors with controlled

  14. Advanced Pattern Material for Investment Casting Applications

    SciTech Connect

    F. Douglas Neece Neil Chaudhry

    2006-02-08

    Cleveland Tool and Machine (CTM) of Cleveland, Ohio in conjunction with Harrington Product Development Center (HPDC) of Cincinnati, Ohio have developed an advanced, dimensionally accurate, temperature-stable, energy-efficient and cost-effective material and process to manufacture patterns for the investment casting industry. In the proposed technology, FOPAT (aFOam PATtern material) has been developed which is especially compatible with the investment casting process and offers the following advantages: increased dimensional accuracy; increased temperature stability; lower cost per pattern; less energy consumption per pattern; decreased cost of pattern making equipment; decreased tooling cost; increased casting yield. The present method for investment casting is "the lost wax" process, which is exactly that, the use of wax as a pattern material, which is then melted out or "lost" from the ceramic shell. The molten metal is then poured into the ceramic shell to produce a metal casting. This process goes back thousands of years and while there have been improvements in the wax and processing technology, the material is basically the same, wax. The proposed technology is based upon an established industrial process of "Reaction Injection Molding" (RIM) where two components react when mixed and then "molded" to form a part. The proposed technology has been modified and improved with the needs of investment casting in mind. A proprietary mix of components has been formulated which react and expand to form a foam-like product. The result is an investment casting pattern with smooth surface finish and excellent dimensional predictability along with the other key benefits listed above.

  15. Material properties and room-temperature nuclear detector response of wide bandgap semiconductors

    NASA Astrophysics Data System (ADS)

    Schieber, M.; Lund, J. C.; Olsen, R. W.; McGregor, D. S.; Van Scyoc, J. M.; James, R. B.; Soria, E.; Bauser, E.

    1996-02-01

    Several semiconductor materials for room-temperature X-ray and gamma-ray detectors, including HgI 2, Cd 1- xZn xTe (CZT), GaAs, and Pbl 2 have been studied at Sandia National Laboratories, California. A comparison of the spectral response of these detectors will be given and related to material properties, such as charge carrier drift length, crystal purity, structural perfection, and material stoichiometry, as well as to the crystal growth techniques and device fabrication processes published elsewhere. Room-temperature detector spectral responses for each of these materials are presented, for photon energies in the range of 5.9 to 662 keV. CZT and HgI 2 detectors demonstrate excellent energy resolution over the entire energy range, while PbI 2 detectors exhibit reasonable response only up to about 30 keV. Some of the semi-insulating GaAs detectors fabricated from vertical gradient freeze materials show good spectral resolution for lower energies up to ˜60 keV, whereas other SI-GaAs detectors studied at Sandia function only as counters. Finally, some predictions on the future materials development of these wide bandgap semiconductors for room-temperature radiation detector applications will be discussed.

  16. Advanced materials for thermal protection system

    NASA Astrophysics Data System (ADS)

    Heng, Sangvavann; Sherman, Andrew J.

    1996-03-01

    Reticulated open-cell ceramic foams (both vitreous carbon and silicon carbide) and ceramic composites (SiC-based, both monolithic and fiber-reinforced) were evaluated as candidate materials for use in a heat shield sandwich panel design as an advanced thermal protection system (TPS) for unmanned single-use hypersonic reentry vehicles. These materials were fabricated by chemical vapor deposition/infiltration (CVD/CVI) and evaluated extensively for their mechanical, thermal, and erosion/ablation performance. In the TPS, the ceramic foams were used as a structural core providing thermal insulation and mechanical load distribution, while the ceramic composites were used as facesheets providing resistance to aerodynamic, shear, and erosive forces. Tensile, compressive, and shear strength, elastic and shear modulus, fracture toughness, Poisson's ratio, and thermal conductivity were measured for the ceramic foams, while arcjet testing was conducted on the ceramic composites at heat flux levels up to 5.90 MW/m2 (520 Btu/ft2ṡsec). Two prototype test articles were fabricated and subjected to arcjet testing at heat flux levels of 1.70-3.40 MW/m2 (150-300 Btu/ft2ṡsec) under simulated reentry trajectories.

  17. Indentation Methods in Advanced Materials Research Introduction

    SciTech Connect

    Pharr, George Mathews; Cheng, Yang-Tse; Hutchings, Ian; Sakai, Mototsugu; Moody, Neville; Sundararajan, G.; Swain, Michael V.

    2009-01-01

    Since its commercialization early in the 20th century, indentation testing has played a key role in the development of new materials and understanding their mechanical behavior. Progr3ess in the field has relied on a close marriage between research in the mechanical behavior of materials and contact mechanics. The seminal work of Hertz laid the foundations for bringing these two together, with his contributions still widely utilized today in examining elastic behavior and the physics of fracture. Later, the pioneering work of Tabor, as published in his classic text 'The Hardness of Metals', exapdned this understanding to address the complexities of plasticity. Enormous progress in the field has been achieved in the last decade, made possible both by advances in instrumentation, for example, load and depth-sensing indentation and scanning electron microscopy (SEM) and transmission electron microscopy (TEM) based in situ testing, as well as improved modeling capabilities that use computationally intensive techniques such as finite element analysis and molecular dynamics simulation. The purpose of this special focus issue is to present recent state of the art developments in the field.

  18. Comparison of radiation damage parameter values for the widely used semiconductor gamma detector materials in wide energy range

    NASA Astrophysics Data System (ADS)

    Korkut, Turgay; Korkut, Hatun

    2014-04-01

    Number of displaced atoms (NDA) values for 3 different semiconductor detector materials (Ge, Si, and GaAs) was reviewed at 26 different primary energies emitted from 9 radiation sources (241Am, 133Ba, 109Cd, 57Co, 60Co, 137Cs, 152Eu, 55Fe and 153Gd) widely used in the literature. FLUKA Monte Carlo code was used to simulate interactions between X-gamma rays and semiconductor detector materials. Germanium has the highest average NDA value in the studied three semiconductors.

  19. Growth and applications of GeSn-related group-IV semiconductor materials

    NASA Astrophysics Data System (ADS)

    Zaima, Shigeaki; Nakatsuka, Osamu; Taoka, Noriyuki; Kurosawa, Masashi; Takeuchi, Wakana; Sakashita, Mitsuo

    2015-08-01

    We review the technology of Ge1-xSnx-related group-IV semiconductor materials for developing Si-based nanoelectronics. Ge1-xSnx-related materials provide novel engineering of the crystal growth, strain structure, and energy band alignment for realising various applications not only in electronics, but also in optoelectronics. We introduce our recent achievements in the crystal growth of Ge1-xSnx-related material thin films and the studies of the electronic properties of thin films, metals/Ge1-xSnx, and insulators/Ge1-xSnx interfaces. We also review recent studies related to the crystal growth, energy band engineering, and device applications of Ge1-xSnx-related materials, as well as the reported performances of electronic devices using Ge1-xSnx related materials.

  20. Hybrid bandgap engineering for super-hetero-epitaxial semiconductor materials, and products thereof

    NASA Technical Reports Server (NTRS)

    Park, Yeonjoon (Inventor); Choi, Sang H. (Inventor); King, Glen C. (Inventor); Elliott, James R. (Inventor)

    2012-01-01

    "Super-hetero-epitaxial" combinations comprise epitaxial growth of one material on a different material with different crystal structure. Compatible crystal structures may be identified using a "Tri-Unity" system. New bandgap engineering diagrams are provided for each class of combination, based on determination of hybrid lattice constants for the constituent materials in accordance with lattice-matching equations. Using known bandgap figures for previously tested materials, new materials with lattice constants that match desired substrates and have the desired bandgap properties may be formulated by reference to the diagrams and lattice matching equations. In one embodiment, this analysis makes it possible to formulate new super-hetero-epitaxial semiconductor systems, such as systems based on group IV alloys on c-plane LaF.sub.3; group IV alloys on c-plane langasite; Group III-V alloys on c-plane langasite; and group II-VI alloys on c-plane sapphire.

  1. Advanced Materials in Support of EERE Needs to Advance Clean Energy Technologies Program Implementation

    SciTech Connect

    Liby, Alan L; Rogers, Hiram

    2013-10-01

    The goal of this activity was to carry out program implementation and technical projects in support of the ARRA-funded Advanced Materials in Support of EERE Needs to Advance Clean Energy Technologies Program of the DOE Advanced Manufacturing Office (AMO) (formerly the Industrial Technologies Program (ITP)). The work was organized into eight projects in four materials areas: strategic materials, structural materials, energy storage and production materials, and advanced/field/transient processing. Strategic materials included work on titanium, magnesium and carbon fiber. Structural materials included work on alumina forming austentic (AFA) and CF8C-Plus steels. The advanced batteries and production materials projects included work on advanced batteries and photovoltaic devices. Advanced/field/transient processing included work on magnetic field processing. Details of the work in the eight projects are available in the project final reports which have been previously submitted.

  2. Abrasive wear of advanced structural materials

    NASA Astrophysics Data System (ADS)

    Lee, Gun-Young

    Wear of advanced structural materials, namely composites and ceramics, in abrasion has been examined in the present study. A simple physically-based model for the abrasive wear of composite materials is presented based on the mechanics and mechanisms associated with sliding wear in soft (ductile) matrix composites containing hard (brittle) reinforcement particles. The model is based on the assumption that any portion of the reinforcement that is removed as wear debris cannot contribute to the wear resistance of the matrix material. The size of this non-contributing portion of reinforcement is estimated by modeling three primary wear mechanisms, specifically plowing, cracking at the matrix/reinforcement interface or in the reinforcement, and particle removal. Critical variables describing the role of the reinforcement, such as the relative size, fracture toughness, and the nature of the matrix/reinforcement interface, are characterized by a single contribution coefficient, C. Predictions are compared with the results of experimental two-body (pin-on-drum) abrasive wear tests performed on a model aluminum particulate-reinforced epoxy-matrix composite material. In addition, the effects of post heat-treatment on the wear behavior of toughened silicon carbide (ABC-SiC) are investigated by characterizing the role of the microstructures introduced during the post annealing processes. When the annealing temperature is above 1300°C, an aluminum rich secondary phase (nano-precipitate) forms and grows inside the SiC grains. This toughened silicon carbide (ABC-SiC), annealed at temperatures ranging from 0 to 1600°C, is subjected to two- and three-body abrasions with different sizes of abrasives (3˜70 mum). The test results exhibit that the effect of nano-precipitates on wear resistance of post-annealed ABC-SiC is restricted to the abrasion with fine abrasives (3 mum), since nano-precipitates, in the range from 4 nm at 1300°C to 25 nm at 1600°C, are comparable in dimension

  3. Compact environmental spectroscopy using advanced semiconductor light-emitting diodes and lasers

    SciTech Connect

    Fritz, I.J.; Klem, J.F.; Hafich, M.J.

    1997-04-01

    This report summarizes research completed under a Laboratory Directed Research and Development program funded for part of FY94, FY95 and FY96. The main goals were (1) to develop novel, compound-semiconductor based optical sources to enable field-based detection of environmentally important chemical species using miniaturized, low-power, rugged, moderate cost spectroscopic equipment, and (2) to demonstrate the utility of near-infrared spectroscopy to quantitatively measure contaminants. Potential applications would include monitoring process and effluent streams for volatile organic compound detection and sensing head-space gasses in storage vessels for waste management. Sensing is based on absorption in the 1.3-1.9 {mu}m band from overtones of the C-H, N-H and O-H stretch resonances. We describe work in developing novel broadband light-emitting diodes emitting over the entire 1.4-1.9 {mu}m wavelength range, first using InGaAs quantum wells, and second using a novel technique for growing digital-alloy materials in the InAlGaAs material system. Next we demonstrate the utility of near-infrared spectroscopy for quantitatively determining contamination of soil by motor oil. Finally we discuss the separability of different classes of organic compounds using near-infrared spectroscopic techniques.

  4. Structural semiconductor-to-semimetal phase transition in two-dimensional materials induced by electrostatic gating

    PubMed Central

    Li, Yao; Duerloo, Karel-Alexander N.; Wauson, Kerry; Reed, Evan J.

    2016-01-01

    Dynamic control of conductivity and optical properties via atomic structure changes is of technological importance in information storage. Energy consumption considerations provide a driving force towards employing thin materials in devices. Monolayer transition metal dichalcogenides are nearly atomically thin materials that can exist in multiple crystal structures, each with distinct electrical properties. By developing new density functional-based methods, we discover that electrostatic gating device configurations have the potential to drive structural semiconductor-to-semimetal phase transitions in some monolayer transition metal dichalcogenides. Here we show that the semiconductor-to-semimetal phase transition in monolayer MoTe2 can be driven by a gate voltage of several volts with appropriate choice of dielectric. We find that the transition gate voltage can be reduced arbitrarily by alloying, for example, for MoxW1−xTe2 monolayers. Our findings identify a new physical mechanism, not existing in bulk materials, to dynamically control structural phase transitions in two-dimensional materials, enabling potential applications in phase-change electronic devices. PMID:26868916

  5. Structural semiconductor-to-semimetal phase transition in two-dimensional materials induced by electrostatic gating.

    PubMed

    Li, Yao; Duerloo, Karel-Alexander N; Wauson, Kerry; Reed, Evan J

    2016-01-01

    Dynamic control of conductivity and optical properties via atomic structure changes is of technological importance in information storage. Energy consumption considerations provide a driving force towards employing thin materials in devices. Monolayer transition metal dichalcogenides are nearly atomically thin materials that can exist in multiple crystal structures, each with distinct electrical properties. By developing new density functional-based methods, we discover that electrostatic gating device configurations have the potential to drive structural semiconductor-to-semimetal phase transitions in some monolayer transition metal dichalcogenides. Here we show that the semiconductor-to-semimetal phase transition in monolayer MoTe2 can be driven by a gate voltage of several volts with appropriate choice of dielectric. We find that the transition gate voltage can be reduced arbitrarily by alloying, for example, for Mo(x)W(1-x)Te2 monolayers. Our findings identify a new physical mechanism, not existing in bulk materials, to dynamically control structural phase transitions in two-dimensional materials, enabling potential applications in phase-change electronic devices. PMID:26868916

  6. Structural semiconductor-to-semimetal phase transition in two-dimensional materials induced by electrostatic gating

    NASA Astrophysics Data System (ADS)

    Li, Yao; Duerloo, Karel-Alexander N.; Wauson, Kerry; Reed, Evan J.

    2016-02-01

    Dynamic control of conductivity and optical properties via atomic structure changes is of technological importance in information storage. Energy consumption considerations provide a driving force towards employing thin materials in devices. Monolayer transition metal dichalcogenides are nearly atomically thin materials that can exist in multiple crystal structures, each with distinct electrical properties. By developing new density functional-based methods, we discover that electrostatic gating device configurations have the potential to drive structural semiconductor-to-semimetal phase transitions in some monolayer transition metal dichalcogenides. Here we show that the semiconductor-to-semimetal phase transition in monolayer MoTe2 can be driven by a gate voltage of several volts with appropriate choice of dielectric. We find that the transition gate voltage can be reduced arbitrarily by alloying, for example, for MoxW1-xTe2 monolayers. Our findings identify a new physical mechanism, not existing in bulk materials, to dynamically control structural phase transitions in two-dimensional materials, enabling potential applications in phase-change electronic devices.

  7. Methods for forming group III-V arsenide-nitride semiconductor materials

    NASA Technical Reports Server (NTRS)

    Major, Jo S. (Inventor); Welch, David F. (Inventor); Scifres, Donald R. (Inventor)

    2000-01-01

    Methods are disclosed for forming Group III--arsenide-nitride semiconductor materials. Group III elements are combined with group V elements, including at least nitrogen and arsenic, in concentrations chosen to lattice match commercially available crystalline substrates. Epitaxial growth of these III-V crystals results in direct bandgap materials, which can be used in applications such as light emitting diodes and lasers. Varying the concentrations of the elements in the III-V crystals varies the bandgaps, such that materials emitting light spanning the visible spectra, as well as mid-IR and near-UV emitters, can be created. Conversely, such material can be used to create devices that acquire light and convert the light to electricity, for applications such as full color photodetectors and solar energy collectors. The growth of the III-V crystals can be accomplished by growing thin layers of elements or compounds in sequences that result in the overall lattice match and bandgap desired.

  8. Semiconductor processing

    NASA Technical Reports Server (NTRS)

    1982-01-01

    The primary thrust of the semiconductor processing is outlined. The purpose is to (1) advance the theoretical basis for bulk growth of elemental and compound semiconductors in single crystal form, and (2) to develop a new experimental approaches by which semiconductor matrices with significantly improved crystalline and chemical perfection can be obtained. The most advanced approaches to silicon crystal growth is studied. The projected research expansion, directed toward the capability of growth of 4 inch diameter silicon crystals was implemented. Both intra and interdepartmental programs are established in the areas of process metallurgy, heat transfer, mass transfer, and systems control. Solutal convection in melt growth systems is also studied.

  9. Advanced High-Temperature Engine Materials Technology Progresses

    NASA Technical Reports Server (NTRS)

    1997-01-01

    The objective of the Advanced High Temperature Engine Materials Technology Program (HITEMP) at the NASA Lewis Research Center is to generate technology for advanced materials and structural analysis that will increase fuel economy, improve reliability, extend life, and reduce operating costs for 21st century civil propulsion systems. The primary focus is on fan and compressor materials (polymer-matrix composites - PMC's), compressor and turbine materials (superalloys, and metal-matrix and intermetallic-matrix composites - MMC's and IMC's), and turbine materials (ceramic-matrix composites - CMC's). These advanced materials are being developed in-house by Lewis researchers and on grants and contracts.

  10. Advanced materials for high-temperature thermoelectric energy conversion

    NASA Technical Reports Server (NTRS)

    Vining, Cronin B.; Vandersande, Jan W.; Wood, Charles

    1992-01-01

    A number of refractory semiconductors are under study at the Jet Propulsion Laboratory for application in thermal to electric energy conversion for space power. The main thrust of the program is to improve or develop materials of high figure of merit and, therefore, high conversion efficiencies over a broad temperature range. Materials currently under investigation are represented by silicon-germanium alloys, lanthanum telluride, and boron carbide. The thermoelectric properties of each of these materials, and prospects for their further improvements, are discussed. Continued progress in thermoelectric materials technology can be expected to yield reliable space power systems with double to triple the efficiency of current state of the art systems.

  11. Charge recombination in distributed heterostructures of semiconductor discotic and polymeric materials.

    NASA Astrophysics Data System (ADS)

    Clark, Jenny; Archer, Robert; Redding, Tim; Foden, Clare; Tant, Julien; Geerts, Yves; Friend, Richard H.; Silva, Carlos

    2008-06-01

    Control of microstructure and energetics at heterojunctions in organic semiconductors is central to achieve high light-emitting or photovoltaic device efficiency. We report the observation of an emissive exciplex formed between an electron-accepting discotic material (hexaazatrinaphthylene or HATNA-SC12) and a hole accepting conjugated polymer {poly[9,9- dioctylfluorene-co-N-(4-butylphenyl)diphenylamine] or TFB}. In contrast to polymer-polymer systems, we find here that the exciplex is strongly localized at the interface, acting as an energy bottleneck with inefficient transfer to bulk exciton states and with low yield of charge separation.

  12. Material degradation of liquid organic semiconductors analyzed by nuclear magnetic resonance spectroscopy

    SciTech Connect

    Fukushima, Tatsuya; Yamamoto, Junichi; Fukuchi, Masashi; Kaji, Hironori; Hirata, Shuzo; Jung, Heo Hyo; Adachi, Chihaya; Hirata, Osamu; Shibano, Yuki

    2015-08-15

    Liquid organic light-emitting diodes (liquid OLEDs) are unique devices consisting only of liquid organic semiconductors in the active layer, and the device performances have been investigated recently. However, the device degradation, especially, the origin has been unknown. In this study, we show that material degradation occurs in liquid OLEDs, whose active layer is composed of carbazole with an ethylene glycol chain. Nuclear magnetic resonance (NMR) experiments clearly exhibit that the dimerization reaction of carbazole moiety occurs in the liquid OLEDs during driving the devices. In contrast, cleavages of the ethylene glycol chain are not detected within experimental error. The dimerization reaction is considered to be related to the device degradation.

  13. X-ray studies of microstructures in semiconductors and superconducting materials

    SciTech Connect

    Kao, Y.H.

    1991-11-12

    Several different experimental investigations were carried out during the present report period. These include x-ray studies of semiconductors, high-{Tc} superconductors, and various thin films using synchrotron radiation (especially soft x-ray experiments by means of our new detector) and measurements of some fundamental properties of new superconducting materials made in our laboratory at Buffalo. We have made the first systematic study of electronic structure in the high-{Tc} superconductors La{sub 2-x}Sr{sub x}CuO{sub 4} with x ranging from 0 to 0.15 by x-ray absorption spectroscopy (XAS).

  14. Studies of noise transmission in advanced composite material structures

    NASA Technical Reports Server (NTRS)

    Roussos, L. A.; Mcgary, M. C.; Powell, C. A.

    1983-01-01

    Noise characteristics of advanced composite material fuselages were discussed from the standpoints of applicable research programs and noise transmission theory. Experimental verification of the theory was also included.

  15. High mobility amorphous zinc oxynitride semiconductor material for thin film transistors

    SciTech Connect

    Ye Yan; Lim, Rodney; White, John M.

    2009-10-01

    Zinc oxynitride semiconductor material is produced through a reactive sputtering process in which competition between reactions responsible for the growth of hexagonal zinc oxide (ZnO) and for the growth of cubic zinc nitride (Zn{sub 3}N{sub 2}) is promoted. In contrast to processes in which the reaction for either the oxide or the nitride is dominant, the multireaction process yields a substantially amorphous or a highly disordered nanocrystalline film with higher Hall mobility, 47 cm{sup 2} V{sup -1} s{sup -1} for the as-deposited film produced at 50 deg. C and 110 cm{sup 2} V{sup -1} s{sup -1} after annealing at 400 deg. C. In addition, it has been observed that the Hall mobility of the material increases as the carrier concentration decreases in a carrier concentration range where a multicomponent metal oxide semiconductor, indium-gallium-zinc oxide, follows the opposite trend. This indicates that the carrier transports in the single-metal compound and the multimetal compound are probably dominated by different mechanisms. Film stability and thin film transistor performance of the material have also been tested, and results are presented herein.

  16. Semiconductor Nanocrystals for Biological Imaging

    SciTech Connect

    Fu, Aihua; Gu, Weiwei; Larabell, Carolyn; Alivisatos, A. Paul

    2005-06-28

    Conventional organic fluorophores suffer from poor photo stability, narrow absorption spectra and broad emission feature. Semiconductor nanocrystals, on the other hand, are highly photo-stable with broad absorption spectra and narrow size-tunable emission spectra. Recent advances in the synthesis of these materials have resulted in bright, sensitive, extremely photo-stable and biocompatible semiconductor fluorophores. Commercial availability facilitates their application in a variety of unprecedented biological experiments, including multiplexed cellular imaging, long-term in vitro and in vivo labeling, deep tissue structure mapping and single particle investigation of dynamic cellular processes. Semiconductor nanocrystals are one of the first examples of nanotechnology enabling a new class of biomedical applications.

  17. Non-Traditional Spectroscopy for Analysis of Semiconductor and Photovoltaic Thin Film Materials

    NASA Astrophysics Data System (ADS)

    Li, Fuhe; Anderson, Scott

    2009-09-01

    Characterization of semiconductor thin films has long been determined by a number of traditional surface analysis techniques; Auger, ESCA/XPS, SEM-EDS and SIMS to name only a few. Depth profiles, contamination in the thin film or quantitative stoichiometry are specific application examples that predicate the technique best suited for the analysis need. The evolution of photovoltaic (PV) thin film compositions with new chemistries and growing importance of atomic layer deposition (ALD) for semiconductor and nanoscale applications provide a sustaining need for thin film analyses along with an avenue for new analytical tools. In this paper we will discuss the applications of two non-traditional material analysis techniques for the semiconductor and PV applications, glow discharge optical emission spectroscopy (RF GD-OES) and laser ablation inductively coupled plasma mass spectrometry (LA ICP-MS). Depth profiles are available via both techniques with the ability to analyze monolayers (single nm) as well as analysis in the bulk (μm thickness). Depth resolution capabilities allow analysis without surface equilibrium issues seen with other techniques. In addition, the charging effect that can cause issues with electron and ion beam techniques is avoided with RF GD-OES and LA ICP-MS, and thus analysis of both conductive and non-conductive materials is very straight-forward. Contaminant analysis in thin films is very straight-forward and elements across the periodic table are analyzed in a simultaneous mode with both techniques. Detection limits to part-per-billion levels can be achieved and quantitation at low concentrations up to 99% achieved with LA ICP-MS. Lastly, t will be discussed that for some thin film applications, LA ICP-MS and RF GD-OES provide advantages over more traditional techniques, and these aspects as well as complementary features will be discussed.

  18. III-antimonide/nitride based semiconductors for optoelectronic materials and device studies : LDRD 26518 final report.

    SciTech Connect

    Kurtz, Steven Ross; Hargett, Terry W.; Serkland, Darwin Keith; Waldrip, Karen Elizabeth; Modine, Normand Arthur; Klem, John Frederick; Jones, Eric Daniel; Cich, Michael Joseph; Allerman, Andrew Alan; Peake, Gregory Merwin

    2003-12-01

    The goal of this LDRD was to investigate III-antimonide/nitride based materials for unique semiconductor properties and applications. Previous to this study, lack of basic information concerning these alloys restricted their use in semiconductor devices. Long wavelength emission on GaAs substrates is of critical importance to telecommunication applications for cost reduction and integration into microsystems. Currently InGaAsN, on a GaAs substrate, is being commercially pursued for the important 1.3 micrometer dispersion minima of silica-glass optical fiber; due, in large part, to previous research at Sandia National Laboratories. However, InGaAsN has not shown great promise for 1.55 micrometer emission which is the low-loss window of single mode optical fiber used in transatlantic fiber. Other important applications for the antimonide/nitride based materials include the base junction of an HBT to reduce the operating voltage which is important for wireless communication links, and for improving the efficiency of a multijunction solar cell. We have undertaken the first comprehensive theoretical, experimental and device study of this material with promising results. Theoretical modeling has identified GaAsSbN to be a similar or potentially superior candidate to InGaAsN for long wavelength emission on GaAs. We have confirmed these predictions by producing emission out to 1.66 micrometers and have achieved edge emitting and VCSEL electroluminescence at 1.3 micrometers. We have also done the first study of the transport properties of this material including mobility, electron/hole mass, and exciton reduced mass. This study has increased the understanding of the III-antimonide/nitride materials enough to warrant consideration for all of the target device applications.

  19. Photoconduction efficiencies of metal oxide semiconductor nanowires: The material's inherent properties

    NASA Astrophysics Data System (ADS)

    Chen, R. S.; Wang, W. C.; Chan, C. H.; Lu, M. L.; Chen, Y. F.; Lin, H. C.; Chen, K. H.; Chen, L. C.

    2013-11-01

    The photoconduction (PC) efficiencies of various single-crystalline metal oxide semiconductor nanowires (NWs) have been investigated and compared based on the materials' inherent properties. The defined PC efficiency (normalized gain) of SnO2 NWs is over one to five orders of magnitude higher than that of its highly efficient counterparts such as ZnO, TiO2, WO3, and GaN. The inherent property of the material allowed the photoconductive gain of an SnO2 single-NW photodetector to easily reach 8 × 108 at a low bias of 3.0 V and a low light intensity of 0.05 Wm-2, which is the optimal reported value so far for the single-NW photodetectors. The probable physical origins, such as charged surface state density and surface band bending, that caused the differences in PC efficiencies and carrier lifetimes are also discussed.

  20. Materials Characterization Challenges for the Semiconductor Industry: Physical and Chemical Techniques

    NASA Astrophysics Data System (ADS)

    Shaffner, Thomas J.

    2002-03-01

    Materials and device characterization serve the essential role of defining how an integrated circuit differs from its intended design and function. Over the years, a variety of physical and chemical techniques based on probes of electrons, ions and photons have evolved to fill this need. Each has a specialized application for resolving specific problems related to smaller geometry, thin film composition, and shallow junction profiling. As we enter the internet era, demands for higher speed, reliability and performance from both silicon and compound semiconductor materials and circuits is prematurely pushing sophisticated and costly R&D characterization tools closer to the manufacturing environment. This review illustrates how this is happening with emphasis on new developments in electron microscopy, ion backscattering, scanning probe methodologies, and even futuristic methods, such as the position-sensitive atom probe.

  1. Analysis of an advanced technology subsonic turbofan incorporating revolutionary materials

    NASA Technical Reports Server (NTRS)

    Knip, Gerald, Jr.

    1987-01-01

    Successful implementation of revolutionary composite materials in an advanced turbofan offers the possibility of further improvements in engine performance and thrust-to-weight ratio relative to current metallic materials. The present analysis determines the approximate engine cycle and configuration for an early 21st century subsonic turbofan incorporating all composite materials. The advanced engine is evaluated relative to a current technology baseline engine in terms of its potential fuel savings for an intercontinental quadjet having a design range of 5500 nmi and a payload of 500 passengers. The resultant near optimum, uncooled, two-spool, advanced engine has an overall pressure ratio of 87, a bypass ratio of 18, a geared fan, and a turbine rotor inlet temperature of 3085 R. Improvements result in a 33-percent fuel saving for the specified misssion. Various advanced composite materials are used throughout the engine. For example, advanced polymer composite materials are used for the fan and the low pressure compressor (LPC).

  2. New Advances in SuperConducting Materials

    ScienceCinema

    None

    2014-08-12

    Superconducting materials will transform the world's electrical infrastructure, saving billions of dollars once the technical details and installation are in place. At Los Alamos National Laboratory, new materials science concepts are bringing this essential technology closer to widespread industrial use.

  3. Development of advanced thermoelectric materials, phase A

    NASA Technical Reports Server (NTRS)

    1980-01-01

    Work performed on the chemical system characterized by chrome sulfide, chrome selenide, lanthanum selenide, and lanthanum sulfide is described. Most materials within the chemical systems possess the requisites for attractive thermoelectric materials. The preparation of the alloys is discussed. Graphs show the Seebeck coefficient, electrical resistivity, and thermal conductivity of various materials within the chemical systems. The results of selected doping are included.

  4. Advanced materials for solid oxide fuel cells

    SciTech Connect

    Armstrong, T.R.; Stevenson, J.

    1995-08-01

    The purpose of this research is to improve the properties of the current state-of-the-art materials used for solid oxide fuel cells (SOFCs). The objectives are to: (1) develop materials based on modifications of the state-of-the-art materials; (2) minimize or eliminate stability problems in the cathode, anode, and interconnect; (3) Electrochemically evaluate (in reproducible and controlled laboratory tests) the current state-of-the-art air electrode materials and cathode/electrolyte interfacial properties; (4) Develop accelerated electrochemical test methods to evaluate the performance of SOFCs under controlled and reproducible conditions; and (5) Develop and test materials for use in low-temperature SOFCs. The goal is to modify and improve the current state-of-the-art materials and minimize the total number of cations in each material to avoid negative effects on the materials properties. Materials to reduce potential deleterious interactions, (3) improve thermal, electrical, and electrochemical properties, (4) develop methods to synthesize both state-of-the-art and alternative materials for the simultaneous fabricatoin and consolidation in air of the interconnections and electrodes with the solid electrolyte, and (5) understand electrochemical reactions at materials interfaces and the effects of component composition and processing on those reactions.

  5. Materials Challenges for Advanced Combustion and Gasification Fossil Energy Systems

    NASA Astrophysics Data System (ADS)

    Sridhar, S.; Rozzelle, P.; Morreale, B.; Alman, D.

    2011-04-01

    This special section of Metallurgical and Materials Transactions is devoted to materials challenges associated with coal based energy conversion systems. The purpose of this introductory article is to provide a brief outline to the challenges associated with advanced combustion and advanced gasification, which has the potential of providing clean, affordable electricity by improving process efficiency and implementing carbon capture and sequestration. Affordable materials that can meet the demanding performance requirements will be a key enabling technology for these systems.

  6. Investigation of nanoscratch processes in semiconductor materials for application to maskless patterning.

    PubMed

    Richter, Asta; Kuswik, Piotr; Oszwaldowski, Maciej; Smith, Roger

    2008-06-01

    Features of nanoscratching processes with a diamond 90 degrees cube corner tip in semiconductor materials have been studied with different tip orientations and scratch procedures: constant and linearly increasing normal load during scratching, multi-scratching and the direct analysis of the generated scratch by re-scanning the scratch with a strongly reduced normal load. These scratch functions allowed a detailed investigation of the materials response due to the mechanical deformation process. Elastic material recovery, plastic deformation and material removal contribute to the generation of scratch groove profiles. For low applied normal loads mainly elastic deformation occurs whereas for larger normal loads stick-slip processes with periodic hillocks at the groove bottom and irregular pile-up along the scratch rim dominate the process. From the analysis of the scratch groove profile in Si(100), GaAs(100) and thin InSb films, quantitative values for the elastic deformation, the friction coefficient, stick-slip pattern, material removal and scratch depth as a function of the applied normal load are obtained. With multi-scratching a definite removal pattern with a reproducible scratch depth is obtained. These results can be used to optimise the scratch technique for application to maskless patterning. PMID:18681041

  7. Fe-Cr-Al containing oxide semiconductors as potential solar water-splitting materials.

    PubMed

    Sliozberg, Kirill; Stein, Helge S; Khare, Chinmay; Parkinson, Bruce A; Ludwig, Alfred; Schuhmann, Wolfgang

    2015-03-01

    A high-throughput thin film materials library for Fe-Cr-Al-O was obtained by reactive magnetron cosputtering and analyzed with automated EDX and XRD to elucidate compositional and structural properties. An automated optical scanning droplet cell was then used to perform photoelectrochemical measurements of 289 compositions on the library, including electrochemical stability, potentiodynamic photocurrents and photocurrent spectroscopy. The photocurrent onset and open circuit potentials of two semiconductor compositions (n-type semiconducting: Fe51Cr47Al2Ox, p-type semiconducting Fe36.5Cr55.5Al8Ox) are favorable for water splitting. Cathodic photocurrents are observed at 1.0 V vs RHE for the p-type material exhibiting an open circuit potential of 0.85 V vs RHE. The n-type material shows an onset of photocurrents at 0.75 V and an open circuit potential of 0.6 V. The p-type material showed a bandgap of 1.55 eV, while the n-type material showed a bandgap of 1.97 eV. PMID:25650842

  8. Computational nano-materials design of high efficiency photovoltaic materials by spinodal nano-decomposition in Chalcopyrite-type semiconductors

    NASA Astrophysics Data System (ADS)

    Asahina, Hideo; Tani, Yoshimasa; Sato, Kazunori; Katayama-Yoshida, Hiroshi

    2014-03-01

    Chalcopyrite-type semiconductor CuInSe2 (CIS) is one of the most promising materials for low cost photovoltaic solar-cells due to its self-regeneration mechanism. However, from the point of resource security, high concentration of In in CIS is serious disadvantage. Recently, Cu2ZnSnS4 (CZTS) attracts much attention to overcome this disadvantage of CIS. This material has already been investigated as a photovoltaic material but the efficiency is not high enough. Based on the first-principles calculations by the KKR-CPA method, we propose how we can enhance the efficiency of CZTS by utilizing the self-organization phenomena caused by spinodal nano-decomposition of Cu & Cu-vacancy, S & Se, and Se & Oxygen. We will compare our design with the available experimental data of STEM-EDX, EELS, Atom Probe Tomography and Raman Scattering data. In addition to the above materials design, we also discuss intermediate band type solar-cells caused by the spinodal nano-decomposition, and propose Fe-doped CuFeS2-CuAlS2 (CFS-CAS), CuFeS2-CuGaS2 (CFS-CGS) and CuFeS2-CuInS2 (CFS-CIS) as promising materials with enhanced conversion efficiency up to 50%.

  9. New Advance in SuperConducting Materials

    ScienceCinema

    None

    2010-01-08

    Superconducting materials will transform the world's electrical infrastructure, saving billions of dollars once the technical details and installation are in place. At Los Alamos National Laborator...  

  10. Advanced materials for space nuclear power systems

    NASA Technical Reports Server (NTRS)

    Titran, Robert H.; Grobstein, Toni L.; Ellis, David L.

    1991-01-01

    The overall philosophy of the research was to develop and characterize new high temperature power conversion and radiator materials and to provide spacecraft designers with material selection options and design information. Research on three candidate materials (carbide strengthened niobium alloy PWC-11 for fuel cladding, graphite fiber reinforced copper matrix composites for heat rejection fins, and tungsten fiber reinforced niobium matrix composites for fuel containment and structural supports) considered for space power system applications is discussed. Each of these types of materials offers unique advantages for space power applications.

  11. Advanced materials for space nuclear power systems

    NASA Technical Reports Server (NTRS)

    Titran, Robert H.; Grobstein, Toni L.; Ellis, David L.

    1991-01-01

    The overall philosophy of the research was to develop and characterize new high temperature power conversion and radiator materials and to provide spacecraft designers with material selection options and design information. Research on three candidate materials (carbide strengthened niobium alloy PWC-11 for fuel cladding, graphite fiber reinforced copper matrix composites for heat rejection fins, and tungsten fiber reinforced niobium matrix composites for fuel containment and structural supports considered for space power system applications is discussed. Each of these types of materials offers unique advantages for space power applications.

  12. New Advance in SuperConducting Materials

    SciTech Connect

    2009-03-02

    Superconducting materials will transform the world's electrical infrastructure, saving billions of dollars once the technical details and installation are in place. At Los Alamos National Laborator...  

  13. Correlation of nanoscale structure with electronic and magnetic properties in semiconductor materials

    NASA Astrophysics Data System (ADS)

    He, Li

    The goal of this research is to correlate individual nanostructures with their electronic and magnetic properties. Three classes of semiconductor materials and nanostructures were investigated: nanowires, dilute magnetic semiconductors, and quantum dots. First, we fabricated electrical contact to free-standing nanowires using focused ion beam (FIB)-induced deposition and achieved ohmic contact between GaP nanowires and FIB-deposited Pt. Ion irradiation was found to change the nanowire resistance, presumably through the generation of electrical active defects. Based on the finding that ion beam induces deposition outside the direct impact area, a new fabrication method for nanowire core-shell structures was developed by creating an annular direct deposition pattern around the nanowire. We also developed a new nanowire transmission electron microscopy (TEM) sample preparation method that enabled the free-standing nanowires to be individually studied in the TEM. Distribution of Pt and Si elements in the deposited layers was confirmed by x-ray energy dispersive spectroscopy and electron energy filtered imaging (elemental mapping). The indirect deposition mechanism is attributed to the interaction of secondary electrons generated from the primary ion impact area with the deposition precursor absorbed at the nanowire surface. The calculated secondary electron flux distribution matched well with the variation of deposition thickness along the nanowire length and with the pattern radius. The second part of this work employed Mn implantation in Ge with subsequent rapid thermal annealing or TEM in-situ annealing to study the correlation between structure and magnetic properties in Ge:Mn magnetic semiconductor materials. Implantation at 75°C with dual Mn doses (2.4x10 15/cm2 at 170 keV, followed by 5.6x10 15/cm2 at 60 keV) produced an amorphous Ge film containing Mn-rich clusters. Its magnetic properties indicated dispersion of ferromagnetic regions in a non-magnetic matrix

  14. Progress in advanced high temperature materials technology

    NASA Technical Reports Server (NTRS)

    Freche, J. C.; Ault, G. M.

    1976-01-01

    Significant progress has recently been made in many high temperature material categories pertinent to such applications by the industrial community. These include metal matrix composites, superalloys, directionally solidified eutectics, coatings, and ceramics. Each of these material categories is reviewed and the current state-of-the-art identified, including some assessment, when appropriate, of progress, problems, and future directions.

  15. Determination of uranium and thorium in semiconductor memory materials by high fluence neutron activation analysis

    SciTech Connect

    Dyer, F.F.; Emery, J.F.; Northcutt, K.J.; Scott, R.M.

    1981-01-01

    Uranium and thorium were measured by absolute neutron activation analysis in high-purity materials used to manufacture semiconductor memories. The main thrust of the study concerned aluminum and aluminum alloys used as sources for thin film preparation, evaporated metal films, and samples from the Czochralski silicon crystal process. Average levels of U and Th were found for the source alloys to be approx. 65 and approx. 45 ppB, respectively. Levels of U and Th in silicon samples fell in the range of a few parts per trillion. Evaporated metal films contained about 1 ppB U and Th, but there is some question about these results due to the possibility of contamination.

  16. Apparatus and method for measuring minority carrier lifetimes in semiconductor materials

    DOEpatents

    Ahrenkiel, Richard K.; Johnston, Steven W.

    2001-01-01

    An apparatus for determining the minority carrier lifetime of a semiconductor sample includes a positioner for moving the sample relative to a coil. The coil is connected to a bridge circuit such that the impedance of one arm of the bridge circuit is varied as sample is positioned relative to the coil. The sample is positioned relative to the coil such that any change in the photoconductance of the sample created by illumination of the sample creates a linearly related change in the input impedance of the bridge circuit. In addition, the apparatus is calibrated to work at a fixed frequency so that the apparatus maintains a consistently high sensitivity and high linearity for samples of different sizes, shapes, and material properties. When a light source illuminates the sample, the impedance of the bridge circuit is altered as excess carriers are generated in the sample, thereby producing a measurable signal indicative of the minority carrier lifetimes or recombination rates of the sample.

  17. Universal solders for direct and powerful bonding on semiconductors, diamond, and optical materials

    NASA Astrophysics Data System (ADS)

    Mavoori, Hareesh; Ramirez, Ainissa G.; Jin, Sungho

    2001-05-01

    The surfaces of electronic and optical materials such as nitrides, carbides, oxides, sulfides, fluorides, selenides, diamond, silicon, and GaAs are known to be very difficult to bond with low melting point solders (<300 °C). We have achieved a direct and powerful bonding on these surfaces by using low temperature solders doped with rare-earth elements. The rare earth is stored in micron-scale, finely-dispersed intermetallic islands (Sn3Lu or Au4Lu), and when released, causes chemical reactions at the interface producing strong bonds. These solders directly bond to semiconductor surfaces and provide ohmic contacts. They can be useful for providing direct electrical contacts and interconnects in a variety of electronic assemblies, dimensionally stable and reliable bonding in optical fiber, laser, or thermal management assemblies.

  18. Fast and high light yield scintillation in the Ga2O3 semiconductor material

    NASA Astrophysics Data System (ADS)

    Yanagida, Takayuki; Okada, Go; Kato, Takumi; Nakauchi, Daisuke; Yanagida, Satoko

    2016-04-01

    We report the distinct scintillation properties of the well-known Ga2O3 semiconductor material. Under UV excitation, the photoluminescence (PL) emission peak appeared near a wavelength of 380 nm with a quantum yield of 6%, and fast decays of 8 and 793 ns were observed. In contrast, the X-ray-induced scintillation spectrum showed an intense emission band near a wavelength of 380 nm, whose decay curve was reproduced using two exponential decay components with time constants of 8 and 977 ns. The pulse height spectrum of 137Cs γ-rays measured using Ga2O3 showed a clear photoabsorption peak with a light yield of 15000 ± 1500 photons/MeV.

  19. Detection of fast neutrons from shielded nuclear materials using a semiconductor alpha detector.

    PubMed

    Pöllänen, R; Siiskonen, T

    2014-08-01

    The response of a semiconductor alpha detector to fast (>1 MeV) neutrons was investigated by using measurements and simulations. A polyethylene converter was placed in front of the detector to register recoil protons generated by elastic collisions between neutrons and hydrogen nuclei of the converter. The developed prototype equipment was tested with shielded radiation sources. The low background of the detector and insensitivity to high-energy gamma rays above 1 MeV are advantages when the detection of neutron-emitting nuclear materials is of importance. In the case of a (252)Cf neutron spectrum, the intrinsic efficiency of fast neutron detection was determined to be 2.5×10(-4), whereas three-fold greater efficiency was obtained for a (241)AmBe neutron spectrum. PMID:24792122

  20. Challenge to advanced materials processing with lasers in Japan

    NASA Astrophysics Data System (ADS)

    Miyamoto, Isamu

    2003-02-01

    Japan is one of the most advanced countries in manufacturing technology, and lasers have been playing an important role for advancement of manufacturing technology in a variety of industrial fields. Contribution of laser materials processing to Japanese industry is significant for both macroprocessing and microprocessing. The present paper describes recent trend and topics of industrial applications in terms of the hardware and the software to show how Japanese industry challenges to advanced materials processing using lasers, and national products related to laser materials processing are also briefly introduced.

  1. Advanced Materials and Cell Components for NASA's Exploration Missions

    NASA Technical Reports Server (NTRS)

    Reid, Concha M.

    2009-01-01

    This is an introductory paper for the focused session "Advanced Materials and Cell Components for NASA's Exploration Missions". This session will concentrate on electrochemical advances in materials and components that have been achieved through efforts sponsored under NASA's Exploration Systems Mission Directorate (ESMD). This paper will discuss the performance goals for components and for High Energy and Ultra High Energy cells, advanced lithium-ion cells that will offer a combination of higher specific energy and improved safety over state-of-the-art. Papers in this session will span a broad range of materials and components that are under development to enable these cell development efforts.

  2. One dimensional semiconductor nanostructures: An effective active-material for terahertz detection

    SciTech Connect

    Vitiello, Miriam S. Viti, Leonardo; Ercolani, Daniele; Sorba, Lucia; Coquillat, Dominique; Knap, Wojciech

    2015-02-01

    One-dimensional (1D) nanostructure devices are at the frontline of studies on future electronics, although issues like massive parallelization, doping control, surface effects, and compatibility with silicon industrial requirements are still open challenges. The recent progresses in atomic to nanometer scale control of materials morphology, size, and composition including the growth of axial, radial, and branched nanowire (NW)-based heterostructures make the NW an ideal building block for implementing rectifying diodes or detectors that could be well operated into the Terahertz (THz), thanks to their typical achievable attofarad-order capacitance. Here, we report on our recent progresses in the development of 1D InAs or InAs/InSb NW-based field effect transistors exploiting novel morphologies and/or material combinations effective for addressing the goal of a semiconductor plasma-wave THz detector array technology. Through a critical review of material-related parameters (NW doping concentration, geometry, and/or material choice) and antenna-related issues, here we underline the crucial aspects that can affect detection performance across the THz frequency region.

  3. Advanced lubrication systems and materials. Final report

    SciTech Connect

    Hsu, S.

    1998-05-07

    This report described the work conducted at the National Institute of Standards and Technology under an interagency agreement signed in September 1992 between DOE and NIST for 5 years. The interagency agreement envisions continual funding from DOE to support the development of fuel efficient, low emission engine technologies in terms of lubrication, friction, and wear control encountered in the development of advanced transportation technologies. However, in 1994, the DOE office of transportation technologies was reorganized and the tribology program was dissolved. The work at NIST therefore continued at a low level without further funding from DOE. The work continued to support transportation technologies in the development of fuel efficient, low emission engine development. Under this program, significant progress has been made in advancing the state of the art of lubrication technology for advanced engine research and development. Some of the highlights are: (1) developed an advanced high temperature liquid lubricant capable of sustaining high temperatures in a prototype heat engine; (2) developed a novel liquid lubricant which potentially could lower the emission of heavy duty diesel engines; (3) developed lubricant chemistries for ceramics used in the heat engines; (4) developed application maps for ceramic lubricant chemistry combinations for design purpose; and (5) developed novel test methods to screen lubricant chemistries for automotive air-conditioning compressors lubricated by R-134a (Freon substitute). Most of these findings have been reported to the DOE program office through Argonne National Laboratory who manages the overall program. A list of those reports and a copy of the report submitted to the Argonne National Laboratory is attached in Appendix A. Additional reports have also been submitted separately to DOE program managers. These are attached in Appendix B.

  4. Advances in Processing of Bulk Ferroelectric Materials

    NASA Astrophysics Data System (ADS)

    Galassi, Carmen

    The development of ferroelectric bulk materials is still under extensive investigation, as new and challenging issues are growing in relation to their widespread applications. Progress in understanding the fundamental aspects requires adequate technological tools. This would enable controlling and tuning the material properties as well as fully exploiting them into the scale production. Apart from the growing number of new compositions, interest in the first ferroelectrics like BaTiO3 or PZT materials is far from dropping. The need to find new lead-free materials, with as high performance as PZT ceramics, is pushing towards a full exploitation of bariumbased compositions. However, lead-based materials remain the best performing at reasonably low production costs. Therefore, the main trends are towards nano-size effects and miniaturisation, multifunctional materials, integration, and enhancement of the processing ability in powder synthesis. Also, in control of dispersion and packing, to let densification occur in milder conditions. In this chapter, after a general review of the composition and main properties of the principal ferroelectric materials, methods of synthesis are analysed with emphasis on recent results from chemical routes and cold consolidation methods based on the colloidal processing.

  5. Advanced materials for radiation-cooled rockets

    NASA Astrophysics Data System (ADS)

    Reed, Brian; Biaglow, James; Schneider, Steven

    1993-11-01

    The most common material system currently used for low thrust, radiation-cooled rockets is a niobium alloy (C-103) with a fused silica coating (R-512A or R-512E) for oxidation protection. However, significant amounts of fuel film cooling are usually required to keep the material below its maximum operating temperature of 1370 C, degrading engine performance. Also the R-512 coating is subject to cracking and eventual spalling after repeated thermal cycling. A new class of high-temperature, oxidation-resistant materials are being developed for radiation-cooled rockets, with the thermal margin to reduce or eliminate fuel film cooling, while still exceeding the life of silicide-coated niobium. Rhenium coated with iridium is the most developed of these high-temperature materials. Efforts are on-going to develop 22 N, 62 N, and 440 N engines composed of these materials for apogee insertion, attitude control, and other functions. There is also a complimentary NASA and industry effort to determine the life limiting mechanisms and characterize the thermomechanical properties of these materials. Other material systems are also being studied which may offer more thermal margin and/or oxidation resistance, such as hafnium carbide/tantalum carbide matrix composites and ceramic oxide-coated iridium/rhenium chambers.

  6. Advanced materials for radiation-cooled rockets

    NASA Technical Reports Server (NTRS)

    Reed, Brian; Biaglow, James; Schneider, Steven

    1993-01-01

    The most common material system currently used for low thrust, radiation-cooled rockets is a niobium alloy (C-103) with a fused silica coating (R-512A or R-512E) for oxidation protection. However, significant amounts of fuel film cooling are usually required to keep the material below its maximum operating temperature of 1370 C, degrading engine performance. Also the R-512 coating is subject to cracking and eventual spalling after repeated thermal cycling. A new class of high-temperature, oxidation-resistant materials are being developed for radiation-cooled rockets, with the thermal margin to reduce or eliminate fuel film cooling, while still exceeding the life of silicide-coated niobium. Rhenium coated with iridium is the most developed of these high-temperature materials. Efforts are on-going to develop 22 N, 62 N, and 440 N engines composed of these materials for apogee insertion, attitude control, and other functions. There is also a complimentary NASA and industry effort to determine the life limiting mechanisms and characterize the thermomechanical properties of these materials. Other material systems are also being studied which may offer more thermal margin and/or oxidation resistance, such as hafnium carbide/tantalum carbide matrix composites and ceramic oxide-coated iridium/rhenium chambers.

  7. Barriers to applying advanced high-temperature materials

    NASA Astrophysics Data System (ADS)

    Premkumar, M. K.

    1993-01-01

    During the past 25 years, aerospace engineers and material scientists have made significant technical progress toward developing next-generation aircraft. However, while advanced high-temperature materials continue to be developed, the outlook for their future application is uncertain and will depend on the ability of these materials to satisfy a more diverse market.

  8. Advanced materials research for long-haul aircraft turbine engines

    NASA Technical Reports Server (NTRS)

    Signorelli, R. A.; Blankenship, C. P.

    1978-01-01

    The status of research efforts to apply low to intermediate temperature composite materials and advanced high temperature materials to engine components is reviewed. Emerging materials technologies and their potential benefits to aircraft gas turbines were emphasized. The problems were identified, and the general state of the technology for near term use was assessed.

  9. Lignin-Derived Advanced Carbon Materials

    SciTech Connect

    Chatterjee, Sabornie; Saito, Tomonori

    2015-01-01

    Lignin is a highly abundant source of renewable carbon that can be considered as a valuable sustainable source of biobased materials. By application specific pretreatments and manufacturing method, lignin can be converted to a variety of value added carbon materials. However, the physical and chemical heterogenitites in lignin complicate its use as a feedstock. In this review, lignin manufacturing process, effects of pretreatments and manufacturing methods on the properties of lignin, properties and applications of various lignin derived carbon materials such as carbon fibers, carbon mats, activated carbons, carbon films; are discussed.

  10. Advances in nonlinear optical materials and devices

    NASA Technical Reports Server (NTRS)

    Byer, Robert L.

    1991-01-01

    The recent progress in the application of nonlinear techniques to extend the frequency of laser sources has come from the joint progress in laser sources and in nonlinear materials. A brief summary of the progress in diode pumped solid state lasers is followed by an overview of progress in nonlinear frequency extension by harmonic generation and parametric processes. Improved nonlinear materials including bulk crystals, quasiphasematched interactions, guided wave devices, and quantum well intersubband studies are discussed with the idea of identifying areas of future progress in nonlinear materials and devices.

  11. Lignin-Derived Advanced Carbon Materials.

    PubMed

    Chatterjee, Sabornie; Saito, Tomonori

    2015-12-01

    Lignin is a highly abundant source of renewable carbon that can be considered as a valuable sustainable source of biobased materials. By applying specific pretreatments and manufacturing methods, lignin can be converted into a variety of value-added carbon materials. However, the physical and chemical heterogeneities of lignin complicate its use as a feedstock. Herein lignin manufacturing process, the effects of pretreatments and manufacturing methods on the properties of product lignin, and structure-property relationships in various applications of lignin-derived carbon materials, such as carbon fibers, carbon mats, activated carbons, carbon films, and templated carbon, are discussed. PMID:26568373

  12. Lignin-Derived Advanced Carbon Materials

    SciTech Connect

    Chatterjee, Sabornie; Saito, Tomonori

    2015-11-16

    Lignin is a highly abundant source of renewable carbon that can be considered as a valuable sustainable source of biobased materials. By applying specific pretreatments and manufacturing methods, it has been found that lignin can be converted into a variety of value-added carbon materials. However, the physical and chemical heterogeneities of lignin complicate its use as a feedstock. Herein, we discuss the lignin manufacturing process, the effects of pretreatments and manufacturing methods on the properties of product lignin, and structure–property relationships in various applications of lignin-derived carbon materials, such as carbon fibers, carbon mats, activated carbons, carbon films, and templated carbon.

  13. Comprehensive Characterization of Extended Defects in Semiconductor Materials by a Scanning Electron Microscope.

    PubMed

    Hieckmann, Ellen; Nacke, Markus; Allardt, Matthias; Bodrov, Yury; Chekhonin, Paul; Skrotzki, Werner; Weber, Jörg

    2016-01-01

    Extended defects such as dislocations and grain boundaries have a strong influence on the performance of microelectronic devices and on other applications of semiconductor materials. However, it is still under debate how the defect structure determines the band structure, and therefore, the recombination behavior of electron-hole pairs responsible for the optical and electrical properties of the extended defects. The present paper is a survey of procedures for the spatially resolved investigation of structural and of physical properties of extended defects in semiconductor materials with a scanning electron microscope (SEM). Representative examples are given for crystalline silicon. The luminescence behavior of extended defects can be investigated by cathodoluminescence (CL) measurements. They are particularly valuable because spectrally and spatially resolved information can be obtained simultaneously. For silicon, with an indirect electronic band structure, CL measurements should be carried out at low temperatures down to 5 K due to the low fraction of radiative recombination processes in comparison to non-radiative transitions at room temperature. For the study of the electrical properties of extended defects, the electron beam induced current (EBIC) technique can be applied. The EBIC image reflects the local distribution of defects due to the increased charge-carrier recombination in their vicinity. The procedure for EBIC investigations is described for measurements at room temperature and at low temperatures. Internal strain fields arising from extended defects can be determined quantitatively by cross-correlation electron backscatter diffraction (ccEBSD). This method is challenging because of the necessary preparation of the sample surface and because of the quality of the diffraction patterns which are recorded during the mapping of the sample. The spatial resolution of the three experimental techniques is compared. PMID:27285177

  14. Comprehensive Characterization of Extended Defects in Semiconductor Materials by a Scanning Electron Microscope

    PubMed Central

    Hieckmann, Ellen; Nacke, Markus; Allardt, Matthias; Bodrov, Yury; Chekhonin, Paul; Skrotzki, Werner; Weber, Jörg

    2016-01-01

    Extended defects such as dislocations and grain boundaries have a strong influence on the performance of microelectronic devices and on other applications of semiconductor materials. However, it is still under debate how the defect structure determines the band structure, and therefore, the recombination behavior of electron-hole pairs responsible for the optical and electrical properties of the extended defects. The present paper is a survey of procedures for the spatially resolved investigation of structural and of physical properties of extended defects in semiconductor materials with a scanning electron microscope (SEM). Representative examples are given for crystalline silicon. The luminescence behavior of extended defects can be investigated by cathodoluminescence (CL) measurements. They are particularly valuable because spectrally and spatially resolved information can be obtained simultaneously. For silicon, with an indirect electronic band structure, CL measurements should be carried out at low temperatures down to 5 K due to the low fraction of radiative recombination processes in comparison to non-radiative transitions at room temperature. For the study of the electrical properties of extended defects, the electron beam induced current (EBIC) technique can be applied. The EBIC image reflects the local distribution of defects due to the increased charge-carrier recombination in their vicinity. The procedure for EBIC investigations is described for measurements at room temperature and at low temperatures. Internal strain fields arising from extended defects can be determined quantitatively by cross-correlation electron backscatter diffraction (ccEBSD). This method is challenging because of the necessary preparation of the sample surface and because of the quality of the diffraction patterns which are recorded during the mapping of the sample. The spatial resolution of the three experimental techniques is compared. PMID:27285177

  15. Marine applications for advanced composite materials

    SciTech Connect

    Hihara, L.H.; Bregman, R.; Takahashi, P.K.

    1993-12-31

    Very large floating structures (VLFSs) may one day be essential to the study and utilization of the ocean. Some possible applications for VLFSs are ocean ranching homeports. observatories for ocean research, seabed mineral refineries, energy generation platforms. and waste management facilities. A VLFS that is in the conceptual phase, and may one day be based off the coast of Hawaii, has been named Blue Revolution. Candidate materials for Blue Revolution were identified based on criteria of rigidity, strength, and weight. Priority was given to materials that could be used to construct lightweight VLFSs. Major static forces were considered in this preliminary analysis. The best materials were identified as those having low values of density/modulus ({rho}/E) and density/strength ({rho}/{sigma}). Concrete, metal alloys, organic-matrix composites (OMCs), and metal-matrix composites (MMCs) were evaluated. OMCs and MMCs were generally the best materials based on their very low {rho}/E and {rho}/{sigma} values.

  16. Materials of construction for advanced coal conversion systems

    SciTech Connect

    Nangia, V.K.

    1982-01-01

    This book describes materials of construction, and materials problems for equipment used in advanced coal conversion systems. The need for cost effective industrial operation is always a prime concern, particularly in this age of energy consciousness. Industry is continually seeking improved materials for more efficient systems. The information presented here is intended to be of use in the design and planning of these systems. Coal conversion and utilization impose severe demands on construction materials because of high temperature, high pressure, corrosive/erosive, and other hostile environmental factors. Successful economic development of these processes can be achieved only to the extent that working materials can withstand increasingly more aggressive operating conditions. The book, which reviews present and past work on the behavior of materials in the environments of advanced coal conversion systems, is divided into three parts: atmospheric fluidized bed combustion, coal gasification and liquefaction, and advanced power systems.

  17. Advanced Materials and Solids Analysis Research Core (AMSARC)

    EPA Science Inventory

    The Advanced Materials and Solids Analysis Research Core (AMSARC), centered at the U.S. Environmental Protection Agency's (EPA) Andrew W. Breidenbach Environmental Research Center in Cincinnati, Ohio, is the foundation for the Agency's solids and surfaces analysis capabilities. ...

  18. Advanced organic composite materials for aircraft structures: Future program

    NASA Technical Reports Server (NTRS)

    1987-01-01

    Revolutionary advances in structural materials have been responsible for revolutionary changes in all fields of engineering. These advances have had and are still having a significant impact on aircraft design and performance. Composites are engineered materials. Their properties are tailored through the use of a mix or blend of different constituents to maximize selected properties of strength and/or stiffness at reduced weights. More than 20 years have passed since the potentials of filamentary composite materials were identified. During the 1970s much lower cost carbon filaments became a reality and gradually designers turned from boron to carbon composites. Despite progress in this field, filamentary composites still have significant unfulfilled potential for increasing aircraft productivity; the rendering of advanced organic composite materials into production aircraft structures was disappointingly slow. Why this is and research and technology development actions that will assist in accelerating the application of advanced organic composites to production aircraft is discussed.

  19. Advanced Engineering Materials: Products from Super Stuff. Resources in Technology.

    ERIC Educational Resources Information Center

    Jacobs, James A.

    1993-01-01

    Discusses the development of "smart" or advanced materials such as ceramics, metals, composites, and polymers. Provides a design brief, a student learning activity with outcomes, quiz, and resources. (SK)

  20. Lignin-Derived Advanced Carbon Materials

    DOE PAGESBeta

    Chatterjee, Sabornie; Saito, Tomonori

    2015-11-16

    Lignin is a highly abundant source of renewable carbon that can be considered as a valuable sustainable source of biobased materials. By applying specific pretreatments and manufacturing methods, it has been found that lignin can be converted into a variety of value-added carbon materials. However, the physical and chemical heterogeneities of lignin complicate its use as a feedstock. Herein, we discuss the lignin manufacturing process, the effects of pretreatments and manufacturing methods on the properties of product lignin, and structure–property relationships in various applications of lignin-derived carbon materials, such as carbon fibers, carbon mats, activated carbons, carbon films, and templatedmore » carbon.« less

  1. Plasmon resonances in semiconductor materials for detecting photocatalysis at the single-particle level.

    PubMed

    Yan, Jiahao; Lin, Zhaoyong; Ma, Churong; Zheng, Zhaoqiang; Liu, Pu; Yang, Guowei

    2016-08-11

    Hot carriers, generated via the non-radiative decay of localized surface plasmon, can be utilized in photovoltaic and photocatalytic devices. In recent years, most studies have focused on conventional plasmon materials like Au and Ag. However, they suffer from several drawbacks like low energy of the generated hot carriers and a high charge-carrier recombination rate. To resolve these problems, here, we propose the plasmon resonances in heavily self-doped titanium oxide (TiO1.67) to realize effective hot carrier generation. Since the plasmon resonant energy of TiO1.67 nanoparticles (2.56 eV) is larger than the bandgap (2.15 eV), plasmon resonances through interband transition can realize both the generation and separation of hot carriers and bring a new strategy for visible-light photodegradation. The photodegradation rate for methyl orange was about 0.034 min(-1). More importantly, the combination of plasmonic and catalytic properties makes it feasible to investigate the degradation process of different materials and different structures at the single particle level in situ. By detecting the scattering shift, we demonstrated that the TiO1.67 dimer (Δλ/ΔλRIU = 0.16) possesses a higher photodegradation rate than an individual nanoparticle (Δλ/ΔλRIU = 0.09). We hope this finding may be a beginning, paving the way toward the development of semiconductor plasmonic materials for new applications beyond noble metals. PMID:27469299

  2. Advance Abrasion Resistant Materials for Mining

    SciTech Connect

    Mackiewicz-Ludtka, G.

    2004-06-01

    The high-density infrared (HDI) transient-liquid coating (TLC) process was successfully developed and demonstrated excellent, enhanced (5 times higher than the current material and process) wear performance for the selected functionally graded material (FGM) coatings under laboratory simulated, in-service conditions. The mating steel component exhibited a wear rate improvement of approximately one and a half (1.5) times. After 8000 cycles of. wear testing, the full-scale component testing demonstrated that the coating integrity was still excellent. Little or no spalling was observed to occur.

  3. ADVANCED ABRASION RESISTANT MATERIALS FOR MINING

    SciTech Connect

    Ludtka, G.M.

    2004-04-08

    The high-density infrared (HDI) transient-liquid coating (TLC) process was successfully developed and demonstrated excellent, enhanced (5 times higher than the current material and process) wear performance for the selected functionally graded material (FGM) coatings under laboratory simulated, in-service conditions. The mating steel component exhibited a wear rate improvement of approximately one and a half (1.5) times. After 8000 cycles of wear testing, the full-scale component testing demonstrated that the coating integrity was still excellent. Little or no spalling was observed to occur.

  4. Fabrication of Advanced Thermoelectric Materials by Hierarchical Nanovoid Generation

    NASA Technical Reports Server (NTRS)

    Choi, Sang Hyouk (Inventor); Park, Yeonjoon (Inventor); Chu, Sang-Hyon (Inventor); Elliott, James R. (Inventor); King, Glen C. (Inventor); Kim, Jae-Woo (Inventor); Lillehei, Peter T. (Inventor); Stoakley, Diane M. (Inventor)

    2011-01-01

    A novel method to prepare an advanced thermoelectric material has hierarchical structures embedded with nanometer-sized voids which are key to enhancement of the thermoelectric performance. Solution-based thin film deposition technique enables preparation of stable film of thermoelectric material and void generator (voigen). A subsequent thermal process creates hierarchical nanovoid structure inside the thermoelectric material. Potential application areas of this advanced thermoelectric material with nanovoid structure are commercial applications (electronics cooling), medical and scientific applications (biological analysis device, medical imaging systems), telecommunications, and defense and military applications (night vision equipments).

  5. NIST Materials Properties Databases for Advanced Ceramics

    PubMed Central

    Munro, R. G.

    2001-01-01

    The NIST Ceramics Division maintains two databases on the physical, mechanical, thermal, and other properties of high temperature superconductors and structural ceramics. Crystallographic data are featured prominently among the physical property data and serve several important functions in the classification and evaluation of the property values. The scope of materials, properties, and data evaluation protocols are discussed for the two databases.

  6. Evaluation of advanced materials. Final report

    SciTech Connect

    Wright, I.G.; Clauer, A.H.; Shetty, D.K.; Tucker, T.R.; Stropki, J.T.

    1982-11-18

    Cemented tungsten carbides with a binder level in the range of 5 to 6 percent exhibited the best resistance to erosion for this class of materials. Other practical cermet meterials were diamond - Si/SiC, Al/sub 2/O/sub 3/-B/sub 4/C-Cr, and B/sub 4/C-Co. SiAlON exhibited erosion resistance equivalent to the best WC-cermet. The only coating system to show promise of improved erosion resistance was CVD TiB/sub 2/ on cemented TiB/sub 2/-Ni. Cracking and/or spalling of a TiC coating and a proprietary TMT coating occurred in the standard slurry erosion test. Ranking of cemented tungsten carbide materials in the laboratory erosion test was the same as that found in service in the Wilsonville pilot plant. Specimens from the Fort Lewis pilot plant which performed well in service exhibited low erosion in the laboratory test. A substitute slurry, was found to be 2 to 4 times more erosive than the coal-derived slurry 8 wt% solids. Ranking of materials in the substitute slurry was nearly identical to that in the coal-derived slurry. Three modes of erosion were: ductile cutting; elastic-plastic indentation and fracture; and intergranular fracture. Erosion of a given material was closely related to its microstructure. In the substitute slurry, the angle-dependence of erosion of two forms of SiC, hot-pressed and sintered, were similar, but the sintered material eroded slower. Laser fusing of preplaced powder mixtures can produce cermet-like structures with potential for erosive and sliding wear resistance. TiC particles in Stellite 6 matrix proved less prone to cracking than WC particles in the same matrix. 74 figures, 14 tables.

  7. Method of fabricating n-type and p-type microcrystalline semiconductor alloy material including band gap widening elements

    DOEpatents

    Guha, Subhendu; Ovshinsky, Stanford R.

    1990-02-02

    A method of fabricating doped microcrystalline semiconductor alloy material which includes a band gap widening element through a glow discharge deposition process by subjecting a precursor mixture which includes a diluent gas to an a.c. glow discharge in the absence of a magnetic field of sufficient strength to induce electron cyclotron resonance.

  8. Advances in electrode materials for AMTEC

    NASA Astrophysics Data System (ADS)

    Ryan, M. A.; Williams, R. M.; Lara, L.; Fiebig, B. G.; Cortez, R. H.; Kisor, A. K.; Shields, V. B.; Homer, M. L.

    2001-02-01

    A mixed conducting electrode for the Alkali Metal Thermal to Electric Converter (AMTEC) has been made and tested. The electrode is made from a slurry of metal and TiO2 powders which is applied to the electrolyte and fired to sinter the electrode material. During the first 48-72 hours of operation in a SETC, the electrode takes up Na from low pressure sodium vapor to make a metal-Na-Ti-O compound. This compound is electronically conducting and ionically conducting to sodium; electronic conduction is also provided by the metal in the electrode. With a mixed conducting electrode made from robust, low vapor pressure materials, the promise for improved performance and lifetime is high. .

  9. PREFACE: Advanced Materials for Demanding Applications

    NASA Astrophysics Data System (ADS)

    McMillan, Alison; Schofield, Stephen; Kelly, Michael

    2015-02-01

    This was a special conference. It was small enough (60+ delegates) but covering a wide range of topics, under a broad end-use focussed heading. Most conferences today either have hundreds or thousands of delegates or are small and very focussed. The topics ranged over composite materials, the testing of durability aspects of materials, and an eclectic set of papers on radar screening using weak ionized plasmas, composites for microvascular applications, composites in space rockets, and materials for spallation neutron sources etc. There were several papers of new characterisation techniques and, very importantly, several papers that started with the end-user requirements leading back into materials selection. In my own area, there were three talks about the technology for the ultra-precise positioning of individual atoms, donors, and complete monolayers to take modern electronics and optoelectronics ideas closer to the market place. The President of the Institute opened with an experience-based talk on translating innovative technology into business. Everyone gave a generous introduction to bring all-comers up to speed with the burning contemporary issues. Indeed, I wish that a larger cohort of first-year engineering PhD students were present to see the full gamut of what takes a physics idea to a success in the market place. I would urge groups to learn from Prof Alison McMillan (a Vice President of the Institute of Physics) and Steven Schofield, to set up conferences of similar scale and breadth. I took in more than I do from mega-meetings, and in greater depth. Professor Michael Kelly Department of Engineering University of Cambridge

  10. Polymers Advance Heat Management Materials for Vehicles

    NASA Technical Reports Server (NTRS)

    2013-01-01

    For 6 years prior to the retirement of the Space Shuttle Program, the shuttles carried an onboard repair kit with a tool for emergency use: two tubes of NOAX, or "good goo," as some people called it. NOAX flew on all 22 flights following the Columbia accident, and was designed to repair damage that occurred on the exterior of the shuttle. Bill McMahon, a structural materials engineer at Marshall Space Flight Center says NASA needed a solution for the widest range of possible damage to the shuttle s exterior thermal protection system. "NASA looked at several options in early 2004 and decided on a sealant. Ultimately, NOAX performed the best and was selected," he says. To prove NOAX would work effectively required hundreds of samples manufactured at Marshall and Johnson, and a concerted effort from various NASA field centers. Johnson Space Center provided programmatic leadership, testing, tools, and crew training; Glenn Research Center provided materials analysis; Langley Research Center provided test support and led an effort to perform large patch repairs; Ames Research Center provided additional testing; and Marshall provided further testing and the site of NOAX manufacturing. Although the sealant never had to be used in an emergency situation, it was tested by astronauts on samples of reinforced carbon-carbon (RCC) during two shuttle missions. (RCC is the thermal material on areas of the shuttle that experience the most heat, such as the nose cone and wing leading edges.) The material handled well on orbit, and tests showed the NOAX patch held up well on RCC.

  11. Advanced Materials and Coatings for Aerospace Applications

    NASA Technical Reports Server (NTRS)

    Miyoshi, Kazuhisa

    2004-01-01

    In the application area of aerospace tribology, researchers and developers must guarantee the highest degree of reliability for materials, components, and systems. Even a small tribological failure can lead to catastrophic results. The absence of the required knowledge of tribology, as Professor H.P. Jost has said, can act as a severe brake in aerospace vehicle systems-and indeed has already done so. Materials and coatings must be able to withstand the aerospace environments that they encounter, such as vacuum terrestrial, ascent, and descent environments; be resistant to the degrading effects of air, water vapor, sand, foreign substances, and radiation during a lengthy service; be able to withstand the loads, stresses, and temperatures encountered form acceleration and vibration during operation; and be able to support reliable tribological operations in harsh environments throughout the mission of the vehicle. This presentation id divided into two sections: surface properties and technology practice related to aerospace tribology. The first section is concerned with the fundamental properties of the surfaces of solid-film lubricants and related materials and coatings, including carbon nanotubes. The second is devoted to applications. Case studies are used to review some aspects of real problems related to aerospace systems to help engineers and scientists to understand the tribological issues and failures. The nature of each problem is analyzed, and the tribological properties are examined. All the fundamental studies and case studies were conducted at the NASA Glenn Research Center.

  12. Cladding and Duct Materials for Advanced Nuclear Recycle Reactors

    SciTech Connect

    Allen, Todd R.; Busby, Jeremy T; Klueh, Ronald L; Maloy, S; Toloczko, M

    2008-01-01

    The expanded use of nuclear energy without risk of nuclear weapons proliferation and with safe nuclear waste disposal is a primary goal of the Global Nuclear Energy Partnership (GNEP). To achieve that goal the GNEP is exploring advanced technologies for recycling spent nuclear fuel that do not separate pure plutonium, and advanced reactors that consume transuranic elements from recycled spent fuel. The GNEP s objectives will place high demands on reactor clad and structural materials. This article discusses the materials requirements of the GNEP s advanced nuclear recycle reactors program.

  13. Advances in optically pumped semiconductor lasers for blue emission under frequency doubling

    NASA Astrophysics Data System (ADS)

    Bai, Yanbo; Wisdom, Jeffrey; Charles, John; Hyland, Patrick; Scholz, Christian; Xu, Zuntu; Lin, Yong; Weiss, Eli; Chilla, Juan; Lepert, Arnaud

    2016-03-01

    Optically pumped semiconductor lasers (OPSL) offer the advantage of excellent beam quality, wavelength agility, and high power scaling capability. In this talk we will present our recent progress of high-power, 920nm OPSLs frequency doubled to 460nm for lightshow applications. Fundamental challenges and mitigations are revealed through electrical, optical, thermal, and mechanical modeling. Results also include beam quality enhancement in addressing the competition from diode lasers.

  14. Semiconductor sensors

    NASA Technical Reports Server (NTRS)

    Gatos, Harry C. (Inventor); Lagowski, Jacek (Inventor)

    1977-01-01

    A semiconductor sensor adapted to detect with a high degree of sensitivity small magnitudes of a mechanical force, presence of traces of a gas or light. The sensor includes a high energy gap (i.e., .about. 1.0 electron volts) semiconductor wafer. Mechanical force is measured by employing a non-centrosymmetric material for the semiconductor. Distortion of the semiconductor by the force creates a contact potential difference (cpd) at the semiconductor surface, and this cpd is determined to give a measure of the force. When such a semiconductor is subjected to illumination with an energy less than the energy gap of the semiconductors, such illumination also creates a cpd at the surface. Detection of this cpd is employed to sense the illumination itself or, in a variation of the system, to detect a gas. When either a gas or light is to be detected and a crystal of a non-centrosymmetric material is employed, the presence of gas or light, in appropriate circumstances, results in a strain within the crystal which distorts the same and the distortion provides a mechanism for qualitative and quantitative evaluation of the gas or the light, as the case may be.

  15. Advanced Functional Materials for Energy Related Applications

    NASA Astrophysics Data System (ADS)

    Sasan, Koroush

    The current global heavy dependency on fossil fuels gives rise to two critical problems: I) fossil fuels will be depleted in the near future; II) the release of green house gas CO2 generated by the combustion of fossil fuels contributes to global warming. To potentially address both problems, this dissertation documents three primary areas of investigation related to the development of alternative energy sources: electrocatalysts for fuel cells, photocatalysts for hydrogen generation, and photoreduction catalysts for converting CO2 to CH4. Fuel cells could be a promising source of alternative energy. Decreasing the cost and improving the durability and power density of Pt/C as a catalyst for reducing oxygen are major challenges for developing fuel cells. To address these concerns, we have synthesized a Nitrogen-Sulfur-Iron-doped porous carbon material. Our results indicate that the synthesized catalyst exhibits not only higher current density and stability but also higher tolerance to crossover chemicals than the commercial Pt/C catalyst. More importantly, the synthetic method is simple and inexpensive. Using photocatalysts and solar energy is another potential alternative solution for energy demand. We have synthesized a new biomimetic heterogeneous photocatalyst through the incorporation of homogeneous complex 1 [(i-SCH 2)2NC(O)C5H4N]-Fe2(CO) 6] into the highly robust zirconium-porphyrin based metal-organic framework (ZrPF). As photosensitizer ZrPF absorbs the visible light and produces photoexcited electrons that can be transferred through axial covalent bond to di-nuclear complex 1 for hydrogen generation. Additionally, we have studied the photoreduction of CO2 to CH4 using self-doped TiO2 (Ti+3@TiO 2) as photocatalytic materials. The incorporation of Ti3+ into TiO2 structures narrows the band gap, leading to significantly increased photocatalytic activity for the reduction of CO2 into renewable hydrocarbon fuel in the presence of water vapor under visible

  16. Advanced STEM Characterization of Nanoscale Materials

    NASA Astrophysics Data System (ADS)

    Dey, Sanchita

    Nanoscale materials are the key structures in determining the properties of many technologically-important materials. Two such important nanoscale materials for different technological applications are investigated in this dissertation. They are: Fischer-Tropsch (FT) catalysts and irradiated metallic bi-layers. Catalytic activity depends on the structural parameters such as size, shape, and distribution on support. On the other hand, the radiation resistance of the model metallic multi-layers is influenced by the presence of interphase, phase-boundaries, and grain-boundaries. The focus of this dissertation is to use different TEM and STEM techniques to understand the structure of these materials. This dissertation begins with a review of the microscopy techniques used in the experiments. Then, in the next two chapters, literature review followed by results and discussions on the two above-mentioned nano materials are presented. Future research directions are included in the concluding chapter. To obtain three-dimensional morphological information of the FT catalysts during reduced/active state, STEM tomography is used. The oxidized state and reduced state is clarified by using STEM-EELS (in the form of spectrum imaging). We used a special vacuum transfer tomography holder and ex-situ gas assembly for reduction, and the reduction parameters are optimized for complete reduction. It was observed that the particle was reduced with 99.99% H2, and at 400°C for 15 minutes. The tomographic results in before-reduction condition depict that the Co-oxide particles are distributed randomly inside the alumina support. After reduction, the tomogram reveals that metallic Co nucleated and sintered towards the surface of the alumina support. The overall metallic Co distribution shows an outward segregation by subsurface diffusion mechanism. In the study of metallic bi-layer, He-irradiated gold twist grain boundary (AuTGB) was chosen as it is one of the least-studied systems in the

  17. An advanced material science payload for GAS

    NASA Technical Reports Server (NTRS)

    Joensson, R.; Wallin, S.; Loeth, K.

    1986-01-01

    The aim of the experiment is to study solidification of different compositions of lead-tin. The weight of the material is quite high: 8 kilograms. Nearly 10% of the payload is sample weight. The dendritic growth and the effect of the absence of natural convection are of particular interest. The results from the flight processed samples will be compared with results from Earth processed samples in order to investigate the influence of the natural convection on the solidification process. The power systems, heat storage and rejection, and mechanical support are discussed in relationship to the scientific requirements.

  18. The Preemptive Stocker Dispatching Rule of Automatic Material Handling System in 300 mm Semiconductor Manufacturing Factories

    NASA Astrophysics Data System (ADS)

    Wang, C. N.; Lin, H. S.; Hsu, H. P.; Wang, Yen-Hui; Chang, Y. P.

    2016-04-01

    The integrated circuit (IC) manufacturing industry is one of the biggest output industries in this century. The 300mm wafer fabs is the major fab size of this industry. The automatic material handling system (AMHS) has become one of the most concerned issues among semiconductor manufacturers. The major lot delivery of 300mm fabs is used overhead hoist transport (OHT). The traffic jams are happened frequently due to the wide variety of products and big amount of OHTs moving in the fabs. The purpose of this study is to enhance the delivery performance of automatic material handling and reduce the delay and waiting time of product transportation for both hot lots and normal lots. Therefore, this study proposes an effective OHT dispatching rule: preemptive stocker dispatching (PSD). Simulation experiments are conducted and one of the best differentiated preemptive rule, differentiated preemptive dispatching (DPD), is used for comparison. Compared with DPD, The results indicated that PSD rule can reduce average variable delivery time of normal lots by 13.15%, decreasing average variable delivery time of hot lots by 17.67%. Thus, the PSD rule can effectively reduce the delivery time and enhance productivity in 300 mm wafer fabs.

  19. Development of ethenetetrathiolate hybrid thermoelectric materials consisting of cellulose acetate and semiconductor nanomaterials

    NASA Astrophysics Data System (ADS)

    Asano, Hitoshi; Sakura, Naoko; Oshima, Keisuke; Shiraishi, Yukihide; Toshima, Naoki

    2016-02-01

    We investigated novel organic/inorganic hybrid thermoelectric materials prepared using several metal-polymer complexes, binders (insulating polymers), and inorganic semiconductor nanomaterials. It was found that the three-component hybrid thermoelectric materials, which consisted of nanodispersed poly(nickel 1,1,2,2-ethenetetrathiolate) (Ni-PETT), cellulose acetate (CA), and carbon nanotubes (CNTs), showed high thermoelectric performance. Ni-PETT had a large negative Seebeck coefficient of -42 µV K-1 and was an n-type semiconducting polymer complex. Ni-PETT sufficiently dispersed p-type CNTs in N-methyl-2-pyrrolidone. The charge transfer interaction between Ni-PETT and CNTs could provide a strong contact. Good films could be obtained by using CA as a binder. In addition, the electrical conductivity of the three-component hybrid films was increased by methanol treatment. The Seebeck coefficient, electrical conductivity, and power factor of Ni-PETT/CA/CNT films normalized on the basis of the CNT mass were 1.9, 5.2, and 2.8 times higher than those of the CNT sheets.

  20. Stress-induced Effects Caused by 3D IC TSV Packaging in Advanced Semiconductor Device Performance

    SciTech Connect

    Sukharev, V.; Kteyan, A.; Choy, J.-H.; Hovsepyan, H.; Markosian, A.; Zschech, E.; Huebner, R.

    2011-11-10

    Potential challenges with managing mechanical stress and the consequent effects on device performance for advanced 3D through-silicon-via (TSV) based technologies are outlined. The paper addresses the growing need in a simulation-based design verification flow capable to analyze a design of 3D IC stacks and to determine across-die out-of-spec variations in device electrical characteristics caused by the layout and through-silicon-via (TSV)/package-induced mechanical stress. The limited characterization/measurement capabilities for 3D IC stacks and a strict ''good die'' requirement make this type of analysis critical for the achievement of an acceptable level of functional and parametric yield and reliability. The paper focuses on the development of a design-for-manufacturability (DFM) type of methodology for managing mechanical stresses during a sequence of designs of 3D TSV-based dies, stacks and packages. A set of physics-based compact models for a multi-scale simulation to assess the mechanical stress across the device layers in silicon chips stacked and packaged with the 3D TSV technology is proposed. A calibration technique based on fitting to measured stress components and electrical characteristics of the test-chip devices is presented. A strategy for generation of a simulation feeding data and respective materials characterization approach are proposed, with the goal to generate a database for multi-scale material parameters of wafer-level and package-level structures. For model validation, high-resolution strain measurements in Si channels of the test-chip devices are needed. At the nanoscale, the transmission electron microscopy (TEM) is the only technique available for sub-10 nm strain measurements so far.

  1. Advances in high-tech materials: Datafile III

    SciTech Connect

    Not Available

    1987-01-01

    The important technical developments in materials engineering of 1986 are reported in this survey, which provides details of the inventions and advances achieved in laboratories and universities around the world. The report also forecasts future developments in materials engineering. A list of promising licensing opportunities is included.

  2. Synthesis and characterization of advanced materials for Navy applications

    NASA Technical Reports Server (NTRS)

    Covino, J.; Lee, I.

    1994-01-01

    The synthesis of ceramics and ceramic coatings through the sol-gel process has extensive application with the United States Navy and a broad range of potential commercial applications as well. This paper surveys seven specific applications for which the Navy is investigating these advanced materials. For each area, the synthetic process is described and the characteristics of the materials are discussed.

  3. Advanced computational research in materials processing for design and manufacturing

    SciTech Connect

    Zacharia, T.

    1995-04-01

    Advanced mathematical techniques and computer simulation play a major role in providing enhanced understanding of conventional and advanced materials processing operations. Development and application of mathematical models and computer simulation techniques can provide a quantitative understanding of materials processes and will minimize the need for expensive and time consuming trial- and error-based product development. As computer simulations and materials databases grow in complexity, high performance computing and simulation are expected to play a key role in supporting the improvements required in advanced material syntheses and processing by lessening the dependence on expensive prototyping and re-tooling. Many of these numerical models are highly compute-intensive. It is not unusual for an analysis to require several hours of computational time on current supercomputers despite the simplicity of the models being studied. For example, to accurately simulate the heat transfer in a 1-m{sup 3} block using a simple computational method requires 10`2 arithmetic operations per second of simulated time. For a computer to do the simulation in real time would require a sustained computation rate 1000 times faster than that achievable by current supercomputers. Massively parallel computer systems, which combine several thousand processors able to operate concurrently on a problem are expected to provide orders of magnitude increase in performance. This paper briefly describes advanced computational research in materials processing at ORNL. Continued development of computational techniques and algorithms utilizing the massively parallel computers will allow the simulation of conventional and advanced materials processes in sufficient generality.

  4. Characterization of advanced preprocessed materials (Hydrothermal)

    SciTech Connect

    Rachel Emerson; Garold Gresham

    2012-09-01

    The initial hydrothermal treatment parameters did not achieve the proposed objective of this effort; the reduction of intrinsic ash in the corn stover. However, liquid fractions from the 170°C treatments was indicative that some of the elements routinely found in the ash that negatively impact the biochemical conversion processes had been removed. After reviewing other options for facilitating ash removal, sodium-citrate (chelating agent) was included in the hydrothermal treatment process, resulting in a 69% reduction in the physiological ash. These results indicated that chelation –hydrothermal treatment is one possible approach that can be utilized to reduce the overall ash content of feedstock materials and having a positive impact on conversion performance.

  5. Experiments investigating advanced materials under thermomechanical loading

    NASA Technical Reports Server (NTRS)

    Bartolotta, Paul A.

    1988-01-01

    Many high temperature aircraft and rocket engine components experience large mechanical loads as well as severe thermal gradients and transients. These nonisothermal conditions are often large enough to cause inelastic deformations, which are the ultimate cause for failure in those parts. A way to alleviate this problem is through improved engine designs based on better predictions of thermomechanical material behavior. To address this concern, an experimental effort was recently initiated within the Hot Section Technology (HOST) program at Lewis. As part of this effort, two new test systems were added to the Fatigue and Structures Lab., which allowed thermomechanical tests to be conducted under closely controlled conditions. These systems are now being used for thermomechanical testing for the Space Station Receiver program, and will be used to support development of metal matrix composites.

  6. Combustion synthesis of advanced composite materials

    NASA Technical Reports Server (NTRS)

    Moore, John J.

    1993-01-01

    Self-propagating high temperature (combustion) synthesis (SHS), has been investigated as a means of producing both dense and expanded (foamed) ceramic and ceramic-metal composites, ceramic powders and whiskers. Several model exothermic combustion synthesis reactions were used to establish the importance of certain reaction parameters, e.g., stoichiometry, green density, combustion mode, particle size, etc. on the control of the synthesis reaction, product morphology and properties. The use of an in situ liquid infiltration technique and the effect of varying the reactants and their stoichiometry to provide a range of reactant and product species i.e., solids, liquids and gases, with varying physical properties e.g., volatility and thermal conductivity, on the microstructure and morphology of synthesized composite materials is discussed. Conducting the combustion synthesis reaction in a reactive gas environment to take advantage of the synergistic effects of combustion synthesis and vapor phase transport is also examined.

  7. Advances in amorphous and nanocrystalline materials

    NASA Astrophysics Data System (ADS)

    Hasegawa, Ryusuke

    2012-10-01

    A new amorphous alloy has been recently introduced which shows a saturation magnetic induction Bs of 1.64 T which is compared with Bs=1.57 T for a currently available Fe-based amorphous alloy and decreased magnetic losses. Such a combination is rare but can be explained in terms of induced magnetic anisotropy being reduced by the alloy's chemistry and its heat treatment. It has been found that the region of magnetization rotation in the new alloy is considerably narrowed, resulting in reduced exciting power in the magnetic devices utilizing the material. Efforts to increase Bs also have been made for nanocrystalline alloys. For example, a nanocrystalline alloy having a composition of Fe80.5Cu1.5Si4B14 shows Bs exceeding 1.8 T. The iron loss at 50 Hz and at 1.6 T induction in a toroidal core of this material is 0.46 W/kg which is 2/3 that of a grain-oriented silicon steel. At 20 kHz/0.2 T excitation, the iron loss is about 60% of that in an Fe-based amorphous alloy which is widely used in power electronics. Another example is a Fe85Si2B8P4Cu1 nanocrystalline alloy with a Bs of 1.8 T, which is reported to exhibit a magnetic core loss of about 0.2 W/kg at 50 Hz and at 1.5 T induction. This article is a review of these new developments and their impacts on energy efficient magnetic devices.

  8. Surface chemical deposition of advanced electronic materials

    NASA Astrophysics Data System (ADS)

    Bjelkevig, Cameron

    The focus of this work was to examine the direct plating of Cu on Ru diffusion barriers for use in interconnect technology and the substrate mediated growth of graphene on boron nitride for use in advanced electronic applications. The electrodeposition of Cu on Ru(0001) and polycrystalline substrates (with and without pretreatment in an iodine containing solution) has been studied by cyclic voltammetry (CV), current--time transient measurements (CTT), in situ electrochemical atomic force microscopy (EC-AFM), and X-ray photoelectron spectroscopy (XPS). The EC-AFM data show that at potentials near the OPD/UPD threshold, Cu crystallites exhibit pronounced growth anisotropy, with lateral dimensions greatly exceeding vertical dimensions. XPS measurements confirmed the presence and stability of adsorbed I on the Ru surface following pre-treatment in a KI/H2SO4 solution and following polarization to at least -200 mV vs. Ag/AgCl. CV data of samples pre-reduced in I-containing electrolyte exhibited a narrow Cu deposition peak in the overpotential region and a UPD peak. The kinetics of the electrodeposited Cu films was investigated by CTT measurements and applied to theoretical models of nucleation. The data indicated that a protective I adlayer may be deposited on an airexposed Ru electrode as the oxide surface is electrochemically reduced, and that this layer will inhibit reformation of an oxide during the Cu electroplating process. A novel method for epitaxial graphene growth directly on a dielectric substrate of systematically variable thickness was studied. Mono/multilayers of BN(111) were grown on Ru(0001) by atomic layer deposition (ALD), exhibiting a flat (non-nanomesh) R30(✓3x✓3) structure. BN(111) was used as a template for growth of graphene by chemical vapor deposition (CVD) of C2H4 at 1000 K. Characterization by LEED, Auger, STM/STS and Raman indicate the graphene is in registry with the BN substrate, and exhibits a HOPG-like 0 eV bandgap density

  9. Materials for advanced rocket engine turbopump turbine blades

    NASA Technical Reports Server (NTRS)

    Chandler, W. T.

    1985-01-01

    A study program was conducted to identify those materials that will provide the greatest benefits as turbine blades for advanced liquid propellant rocket engine turbines and to prepare technology plans for the development of those materials for use in the 1990 through 1995 period. The candidate materials were selected from six classes of materials: single-crystal (SC) superalloys, oxide dispersion-strengthened (ODS) superalloys, rapid solidification processed (RSP) superalloys, directionally solidified eutectic (DSE) superalloys, fiber-reinforced superalloy (FRS) composites, and ceramics. Properties of materials from the six classes were compiled and evaluated and property improvements were projected approximately 5 years into the future for advanced versions of materials in each of the six classes.

  10. SYNTHESIS AND CHARACTERIZATION OF ADVANCED MAGNETIC MATERIALS

    SciTech Connect

    Monica Sorescu

    2004-09-22

    The work described in this grant report was focused mainly on the properties of novel magnetic intermetallics. In the first project, we synthesized several 2:17 intermetallic compounds, namely Nd{sub 2}Fe{sub 15}Si{sub 2}, Nd{sub 2}Fe{sub 15}Al{sub 2}, Nd{sub 2}Fe{sub 15}SiAl and Nd{sub 2}Fe{sub 15}SiMn, as well as several 1:12 intermetallic compounds, such as NdFe{sub 10}Si{sub 2}, NdFe{sub 10}Al{sub 2}, NdFe{sub 10}SiAl and NdFe{sub 10}MnAl. In the second project, seven compositions of Nd{sub x}Fe{sub 100-x-y}B{sub y} ribbons were prepared by a melt spinning method with Nd and B content increasing from 7.3 and 3.6 to 11 and 6, respectively. The alloys were annealed under optimized conditions to obtain a composite material consisting of the hard magnetic Nd{sub 2}Fe{sub 14}B and soft magnetic {alpha}-Fe phases, typical of a spring magnet structure. In the third project, intermetallic compounds of the type Zr{sub 1}Cr{sub 1}Fe{sub 1}T{sub 0.8} with T = Al, Co and Fe were subjected to hydrogenation. In the fourth project, we performed three crucial experiments. In the first experiment, we subjected a mixture of Fe{sub 3}O{sub 4} and Fe (80-20 wt %) to mechanochemical activation by high-energy ball milling, for time periods ranging from 0.5 to 14 hours. In the second experiment, we ball-milled Fe{sub 3}O{sub 4}:Co{sup 2+} (x = 0.1) for time intervals between 2.5 and 17.5 hours. Finally, we exposed a mixture of Fe{sub 3}O{sub 4} and Co (80-20 wt %) to mechanochemical activation for time periods ranging from 0.5 to 10 hours. In all cases, the structural and magnetic properties of the systems involved were elucidated by X-ray diffraction (XRD), Moessbauer spectroscopy and hysteresis loop measurements. The four projects resulted in four papers, which were published in Intermetallics, IEEE Transactions on Magnetics, Journal of Materials Science Letters and Materials Chemistry and Physics. The contributions reveal for the first time in literature the effect of

  11. MATERIALS AND COMPONENT DEVELOPMENT FOR ADVANCED TURBINE SYSTEMS PROJECT SUMMARY

    SciTech Connect

    Alvin, M A

    2010-06-18

    Future hydrogen-fired or oxy-fuel turbines will likely experience an enormous level of thermal and mechanical loading, as turbine inlet temperatures (TIT) approach 1425-1760C (2600-3200F) with pressures of 300-625 psig, respectively. Maintaining the structural integrity of future turbine components under these extreme conditions will require (1) durable thermal barrier coatings (TBCs), (2) high temperature creep resistant metal substrates, and (3) effective cooling techniques. While advances in substrate materials have been limited for the past decades, thermal protection of turbine airfoils in future hydrogen-fired and oxy-fuel turbines will rely primarily on collective advances in the TBCs and aerothermal cooling. To support the advanced turbine technology development, the Office of Research and Development (ORD) at National Energy Technology Laboratory (NETL) has continued its collaborative research efforts with the University of Pittsburgh and West Virginia University, while working in conjunction with commercial material and coating suppliers. This paper presents the technical accomplishments that were made during FY09 in the initial areas of advanced materials, aerothermal heat transfer and non-destructive evaluation techniques for use in advanced land-based turbine applications in the Materials and Component Development for Advanced Turbine Systems project, and introduces three new technology areas high temperature overlayer coating development, diffusion barrier coating development, and oxide dispersion strengthened (ODS) alloy development that are being conducted in this effort.

  12. Integration of advanced nuclear materials separation processes

    SciTech Connect

    Jarvinen, G.D.; Worl, L.A.; Padilla, D.D.; Berg, J.M.; Neu, M.P.; Reilly, S.D.; Buelow, S.

    1998-12-31

    This is the final report of a two-year, Laboratory Directed Research and Development (LDRD) project at the Los Alamos National Laboratory (LANL). This project has examined the fundamental chemistry of plutonium that affects the integration of hydrothermal technology into nuclear materials processing operations. Chemical reactions in high temperature water allow new avenues for waste treatment and radionuclide separation.Successful implementation of hydrothermal technology offers the potential to effective treat many types of radioactive waste, reduce the storage hazards and disposal costs, and minimize the generation of secondary waste streams. The focus has been on the chemistry of plutonium(VI) in solution with carbonate since these are expected to be important species in the effluent from hydrothermal oxidation of Pu-containing organic wastes. The authors investigated the structure, solubility, and stability of the key plutonium complexes. Installation and testing of flow and batch hydrothermal reactors in the Plutonium Facility was accomplished. Preliminary testing with Pu-contaminated organic solutions gave effluent solutions that readily met discard requirements. A new effort in FY 1998 will build on these promising initial results.

  13. Simulation Toolkit for Renewable Energy Advanced Materials Modeling

    2013-11-13

    STREAMM is a collection of python classes and scripts that enables and eases the setup of input files and configuration files for simulations of advanced energy materials. The core STREAMM python classes provide a general framework for storing, manipulating and analyzing atomic/molecular coordinates to be used in quantum chemistry and classical molecular dynamics simulations of soft materials systems. The design focuses on enabling the interoperability of materials simulation codes such as GROMACS, LAMMPS and Gaussian.

  14. Numerical Simulations and Optimisation in Forming of Advanced Materials

    NASA Astrophysics Data System (ADS)

    Huétink, J.

    2007-04-01

    With the introduction of new materials as high strength steels, metastable steels and fiber reinforce composites, the need for advanced physically valid constitutive models arises. A biaxial test equipment is developed and applied for the determination of material data as well as for validation of material models. An adaptive through- thickness integration scheme for plate elements is developed, which improves the accuracy of spring back prediction at minimal costs. An optimization strategy is proposed that assists an engineer to model an optimization problem.

  15. Fossil Energy Advanced Research and Technology Development Materials Program

    SciTech Connect

    Cole, N.C.; Judkins, R.R.

    1992-12-01

    Objective of this materials program is to conduct R and D on materials for fossil energy applications with focus on longer-term and generic needs of the various fossil fuel technologies. The projects are organized according to materials research areas: (1) ceramics, (2) new alloys: iron aluminides, advanced austenitics and chromium niobium alloys, and (3) technology development and transfer. Separate abstracts have been prepared.

  16. Advanced Industrial Materials (AIM) Program: Annual progress report FY 1995

    SciTech Connect

    1996-04-01

    In many ways, the Advanced Industrial Materials (AIM) Program underwent a major transformation in Fiscal Year 1995 and these changes have continued to the present. When the Program was established in 1990 as the Advanced Industrial Concepts (AIC) Materials Program, the mission was to conduct applied research and development to bring materials and processing technologies from the knowledge derived from basic research to the maturity required for the end use sectors for commercialization. In 1995, the Office of Industrial Technologies (OIT) made radical changes in structure and procedures. All technology development was directed toward the seven ``Vision Industries`` that use about 80% of industrial energy and generated about 90% of industrial wastes. The mission of AIM has, therefore, changed to ``Support development and commercialization of new or improved materials to improve productivity, product quality, and energy efficiency in the major process industries.`` Though AIM remains essentially a National Laboratory Program, it is essential that each project have industrial partners, including suppliers to, and customers of, the seven industries. Now, well into FY 1996, the transition is nearly complete and the AIM Program remains reasonably healthy and productive, thanks to the superb investigators and Laboratory Program Managers. This Annual Report for FY 1995 contains the technical details of some very remarkable work by the best materials scientists and engineers in the world. Areas covered here are: advanced metals and composites; advanced ceramics and composites; polymers and biobased materials; and new materials and processes.

  17. A Theoretical Study of Bulk and Surface Diffusion Processes for Semiconductor Materials Using First Principles Calculations

    NASA Astrophysics Data System (ADS)

    Roehl, Jason L.

    Diffusion of point defects on crystalline surfaces and in their bulk is an important and ubiquitous phenomenon affecting film quality, electronic properties and device functionality. A complete understanding of these diffusion processes enables one to predict and then control those processes. Such understanding includes knowledge of the structural, energetic and electronic properties of these native and non-native point defect diffusion processes. Direct experimental observation of the phenomenon is difficult and microscopic theories of diffusion mechanisms and pathways abound. Thus, knowing the nature of diffusion processes, of specific point defects in given materials, has been a challenging task for analytical theory as well as experiment. The recent advances in computing technology have been a catalyst for the rise of a third mode of investigation. The advent of tremendous computing power, breakthroughs in algorithmic development in computational applications of electronic density functional theory now enables direct computation of the diffusion process. This thesis demonstrates such a method applied to several different examples of point defect diffusion on the (001) surface of gallium arsenide (GaAs) and the bulk of cadmium telluride (CdTe) and cadmium sulfide (CdS). All results presented in this work are ab initio, total-energy pseudopotential calculations within the local density approximation to density-functional theory. Single particle wavefunctions were expanded in a plane-wave basis and reciprocal space k-point sampling was achieved by Monkhorst-Pack generated k-point grids. Both surface and bulk computations employed a supercell approach using periodic boundary conditions. Ga adatom adsorption and diffusion processes were studied on two reconstructions of the GaAs(001) surface including the c(4x4) and c(4x4)-heterodimer surface reconstructions. On the GaAs(001)- c(4x4) surface reconstruction, two distinct sets of minima and transition sites were

  18. Code qualification of structural materials for AFCI advanced recycling reactors.

    SciTech Connect

    Natesan, K.; Li, M.; Majumdar, S.; Nanstad, R.K.; Sham, T.-L.

    2012-05-31

    This report summarizes the further findings from the assessments of current status and future needs in code qualification and licensing of reference structural materials and new advanced alloys for advanced recycling reactors (ARRs) in support of Advanced Fuel Cycle Initiative (AFCI). The work is a combined effort between Argonne National Laboratory (ANL) and Oak Ridge National Laboratory (ORNL) with ANL as the technical lead, as part of Advanced Structural Materials Program for AFCI Reactor Campaign. The report is the second deliverable in FY08 (M505011401) under the work package 'Advanced Materials Code Qualification'. The overall objective of the Advanced Materials Code Qualification project is to evaluate key requirements for the ASME Code qualification and the Nuclear Regulatory Commission (NRC) approval of structural materials in support of the design and licensing of the ARR. Advanced materials are a critical element in the development of sodium reactor technologies. Enhanced materials performance not only improves safety margins and provides design flexibility, but also is essential for the economics of future advanced sodium reactors. Code qualification and licensing of advanced materials are prominent needs for developing and implementing advanced sodium reactor technologies. Nuclear structural component design in the U.S. must comply with the ASME Boiler and Pressure Vessel Code Section III (Rules for Construction of Nuclear Facility Components) and the NRC grants the operational license. As the ARR will operate at higher temperatures than the current light water reactors (LWRs), the design of elevated-temperature components must comply with ASME Subsection NH (Class 1 Components in Elevated Temperature Service). However, the NRC has not approved the use of Subsection NH for reactor components, and this puts additional burdens on materials qualification of the ARR. In the past licensing review for the Clinch River Breeder Reactor Project (CRBRP) and the

  19. Determination of tellurium in indium antimonide semiconductor material by electrothermal atomic absorption spectrometry.

    PubMed

    Shiue, M Y; Sun, Y C; Yang, M H

    2001-08-01

    A method for the determination of the dopant concentration of tellurium in dissolved indium antimonide semiconductor material by electrothermal atomic absorption spectrometry (ETAAS) was developed. Efforts were made to investigate the optimal conditions of the furnace heating program and the effect of palladium modifier on the variation of tellurium and the background absorbance. According to the results obtained, the presence of palladium chemical modifier in the analysis of indium antimonide allowed the successful retention of tellurium in the graphite tube, and the optimum mass of palladium modifier was found to be dependent on the sample matrix concentration. The absorbance profile of tellurium and the background level were significantly improved when a pyrolysis temperature of 1100 degrees C and an atomization temperature of 2200 degrees C were employed in the optimized heating program. With the use of this method, a detection limit of 0.8 microg g(-1) tellurium in indium antimonide could be achieved. The applicability of the proposed method was evaluated by comparison with two independent methods, i.e. slurry sampling-ETAAS and ICP-MS. From the good agreement between the results, it was demonstrated that the proposed method is suitable for the determination of typical dopant concentrations of tellurium in indium antimonide. PMID:11534624

  20. Alpha-particle emissivity screening of materials used for semiconductor manufacturing

    NASA Astrophysics Data System (ADS)

    Gordon, Michael; Rodbell, Kenneth

    2015-03-01

    Single-Event Upsets (SEU's) in semiconductor memory and logic devices continue to be a reliability issue in modern CMOS devices. SEU's result from deposited charge in the Si devices caused by the passage of ionizing radiation. With technology scaling, the device area decreases, but the critical charge required to flip bits decreases as well. The interplay between both determines how the SEU rate scales with shrinking device geometries and dimensions. In order to minimize the alpha-particle component of SEU, the radiation in the device environment has to be at the Ultra-Low Alpha (ULA) activity levels, e.g. less than 2 α/khr-cm2. Most detectors have background levels that are significantly larger than that level which makes making these measurements difficult and time consuming. A new class of alpha particle detector, utilizing pulse shape discrimination, is now available which allows one to make measurements quickly with ultra-low detector background. This talk will discuss what is involved in making alpha particle measurements of materials in the ULA activity levels, in terms of calibration, radon adsorption mitigation, the time required for obtaining reasonable statistics and comparisons to other detectors.

  1. Advances in Structural Studies of Materials using Scattering Probes

    SciTech Connect

    Huq, Ashfia; Bozin, Emil; Welberry, Dr. Richard

    2010-01-01

    Study of contemporary materials and their remarkable properties is a challenging problem. To understand these complex properties and develop better materials it is essential to understand their structures, as the two are intimately linked. Great advances in materials scattering have been achieved due to the advent of synchrotron and neutron sources along with the availability of high-speed computational algorithms. Materials scientists can now collect data with high resolution, high throughput from very small amount of sample (both single crystal and powder), and analyze vast amount of data to unravel detailed structural description that was not possible before. This article presents some of these great advances in using scattering probes for materials characterization.

  2. Deformation and Damage Studies for Advanced Structural Materials

    NASA Technical Reports Server (NTRS)

    2005-01-01

    Advancements made in understanding deformation and damage of advanced structural materials have enabled the development of new technologies including the attainment of a nationally significant NASA Level 1 Milestone and the provision of expertise to the Shuttle Return to Flight effort. During this collaborative agreement multiple theoretical and experimental research programs, facilitating safe durable high temperature structures using advanced materials, have been conceived, planned, executed. Over 26 publications, independent assessments of structures and materials in hostile environments, were published within this agreement. This attainment has been recognized by 2002 Space Flight Awareness Team Award, 2004 NASA Group Achievement Award and 2003 and 2004 OAI Service Awards. Accomplishments in the individual research efforts are described as follows.

  3. Advanced radiation detector development: Advanced semiconductor detector development: Development of a oom-temperature, gamma ray detector using gallium arsenide to develop an electrode detector

    SciTech Connect

    Knoll, G.F.

    1995-11-01

    The advanced detector development project at the University of Michigan has completed the first full year of its current funding. Our general goals are the development of radiation detectors and spectrometers that are capable of portable room temperature operation. Over the past 12 months, we have worked primarily in the development of semiconductor spectrometers with {open_quotes}single carrier{close_quotes} response that offer the promise of room temperature operation and good energy resolution in gamma ray spectroscopy. We have also begun a small scale effort at investigating the properties of a small non-spectroscopic detector system with directional characteristics that will allow identification of the approximate direction in which gamma rays are incident. These activities have made use of the extensive clean room facilities at the University of Michigan for semiconductor device fabrication, and also the radiation measurement capabilities provided in our laboratory in the Phoenix Building on the North Campus. In addition to our laboratory based activities, Professor Knoll has also been a participant in several Department of Energy review activities held in the Forrestal Building and at the Germantown site. The most recent of these has been service on a DOE review panel chaired by Dr. Hap Lamonds that is reviewing the detector development programs supported through the Office of Arms Control and International Security.

  4. Space processing of crystalline materials: A study of known methods of electrical characterization of semiconductors: Bibliography

    NASA Technical Reports Server (NTRS)

    Castle, J. G.

    1976-01-01

    A selective bibliography is given on electrical characterization techniques for semiconductors. Emphasis is placed on noncontacting techniques for the standard electrical parameters for monitoring crystal growth in space, preferably in real time with high resolution.

  5. Soft computing in design and manufacturing of advanced materials

    NASA Technical Reports Server (NTRS)

    Cios, Krzysztof J.; Baaklini, George Y; Vary, Alex

    1993-01-01

    The potential of fuzzy sets and neural networks, often referred to as soft computing, for aiding in all aspects of manufacturing of advanced materials like ceramics is addressed. In design and manufacturing of advanced materials, it is desirable to find which of the many processing variables contribute most to the desired properties of the material. There is also interest in real time quality control of parameters that govern material properties during processing stages. The concepts of fuzzy sets and neural networks are briefly introduced and it is shown how they can be used in the design and manufacturing processes. These two computational methods are alternatives to other methods such as the Taguchi method. The two methods are demonstrated by using data collected at NASA Lewis Research Center. Future research directions are also discussed.

  6. Progress in advanced high temperature turbine materials, coatings, and technology

    NASA Technical Reports Server (NTRS)

    Freche, J. C.; Ault, G. M.

    1978-01-01

    Advanced materials, coatings, and cooling technology is assessed in terms of improved aircraft turbine engine performance. High cycle operating temperatures, lighter structural components, and adequate resistance to the various environmental factors associated with aircraft gas turbine engines are among the factors considered. Emphasis is placed on progress in development of high temperature materials for coating protection against oxidation, hot corrosion and erosion, and in turbine cooling technology. Specific topics discussed include metal matrix composites, superalloys, directionally solidified eutectics, and ceramics.

  7. MATERIALS AND COMPONENT DEVELOPMENT FOR ADVANCED TURBINE SYSTEMS

    SciTech Connect

    M. A. Alvin

    2009-06-12

    Future hydrogen-fired or oxy-fuel turbines will likely experience an enormous level of thermal and mechanical loading, as turbine inlet temperatures (TIT) approach 1425-1760ºC with pressures of 300-625 psig, respectively. Maintaining the structural integrity of future turbine components under these extreme conditions will require durable thermal barrier coatings (TBCs), high temperature creep resistant metal substrates, and effective cooling techniques. While advances in substrate materials have been limited for the past decades, thermal protection of turbine airfoils in future hydrogen-fired and oxy-fuel turbines will rely primarily on collective advances in TBCs and aerothermal cooling. To support the advanced turbine technology development, the National Energy Technology Laboratory (NETL) at the Office of Research and Development (ORD) has initiated a research project effort in collaboration with the University of Pittsburgh (UPitt), and West Virginia University (WVU), working in conjunction with commercial material and coating suppliers, to develop advanced materials, aerothermal configurations, as well as non-destructive evaluation techniques for use in advanced land-based gas turbine applications. This paper reviews technical accomplishments recently achieved in each of these areas.

  8. Workshop report and presentations from the Semiconductor Research Corporation-DOE Semiconductor Task Force Workshop

    NASA Astrophysics Data System (ADS)

    The Semiconductor Research Corporation-DOE Semiconductor Task Force Workshop was held in Oak ridge, Tennessee, on November 2-3, 1987. It was to provide a forum for representatives of the national laboratories, DOE, and the semiconductor industry in which to discuss capabilities of the national laboratories which could contribute to the future competitiveness of the US semiconductor industry, to identify specific large and small projects at the national laboratories which would be of direct benefit to the semiconductor industry, and to find ways of implementing these projects. Numerous small projects were identified which would utilize unique capabilities of the national laboratories in advanced ion implantation, plasma processing (including electron cyclotron resonance plasmas), ion and cluster beam deposition, materials characterization, electronic packaging, and laser processing and deposition. Five large-scale candidate projects were identified in synchrotron x-ray lithography, silicon process integration, advanced materials processing science, process analysis and diagnostics, and ultra clean room engineering. The major obstacle to implementing these projects if the lack of appropriate funds to initiate and stimulate interactions between the national laboratories and the semiconductor industry. SEMATECH and the federal government are potential sources of seed funds for these projects. The Semiconductor Research Corporation is ideally suited to interface the semiconductor industry and the national laboratories for many of these interactions.

  9. ADVANCED HOT SECTION MATERIALS AND COATINGS TEST RIG

    SciTech Connect

    Scott Reome; Dan Davies

    2004-04-30

    The Hyperbaric Advanced Hot Section Materials & Coating Test Rig program provides design and implementation of a laboratory rig capable of simulating the hot gas path conditions of coal-gas fired industrial gas turbine engines. The principal activity during this reporting period were the evaluation of syngas combustor concepts, the evaluation of test section concepts and the selection of the preferred rig configuration.

  10. Advanced Hot Section Materials and Coatings Test Rig

    SciTech Connect

    Dan Davies

    2004-10-30

    The Hyperbaric Advanced Hot Section Materials & Coating Test Rig program provides design and implementation of a laboratory rig capable of simulating the hot gas path conditions of coal-gas fired industrial gas turbine engines. The principal activities during this reporting period were the continuation of test section detail design and developing specifications for auxiliary systems and facilities.

  11. Advanced Packaging Materials and Techniques for High Power TR Module: Standard Flight vs. Advanced Packaging

    NASA Technical Reports Server (NTRS)

    Hoffman, James Patrick; Del Castillo, Linda; Miller, Jennifer; Jenabi, Masud; Hunter, Donald; Birur, Gajanana

    2011-01-01

    The higher output power densities required of modern radar architectures, such as the proposed DESDynI [Deformation, Ecosystem Structure, and Dynamics of Ice] SAR [Synthetic Aperture Radar] Instrument (or DSI) require increasingly dense high power electronics. To enable these higher power densities, while maintaining or even improving hardware reliability, requires advances in integrating advanced thermal packaging technologies into radar transmit/receive (TR) modules. New materials and techniques have been studied and compared to standard technologies.

  12. Materials/manufacturing element of the Advanced Turbine Systems Program

    SciTech Connect

    Karnitz, M.A.; Holcomb, R.S.; Wright, I.G.

    1995-10-01

    The technology based portion of the Advanced Turbine Systems Program (ATS) contains several subelements which address generic technology issues for land-based gas-turbine systems. One subelement is the Materials/Manufacturing Technology Program which is coordinated by DOE-Oak Ridge Operations and Oak Ridge National Laboratory (ORNL). The work in this subelement is being performed predominantly by industry with assistance from universities and the national laboratories. Projects in this subelement are aimed toward hastening the incorporation of new materials and components in gas turbines. A materials/manufacturing plan was developed in FY 1994 with input from gas turbine manufacturers, materials suppliers, universities, and government laboratories. The plan outlines seven major subelements which focus on materials issues and manufacturing processes. Work is currently under way in four of the seven major subelements. There are now major projects on coatings and process development, scale-up of single crystal airfoil manufacturing technology, materials characterization, and technology information exchange.

  13. Corrosion performance of advanced structural materials in sodium.

    SciTech Connect

    Natesan, K.; Momozaki, Y.; Li, M.; Rink, D.L.

    2012-05-16

    This report gives a description of the activities in design, fabrication, construction, and assembling of a pumped sodium loop for the sodium compatibility studies on advanced structural materials. The work is the Argonne National Laboratory (ANL) portion of the effort on the work project entitled, 'Sodium Compatibility of Advanced Fast Reactor Materials,' and is a part of Advanced Materials Development within the Reactor Campaign. The objective of this project is to develop information on sodium corrosion compatibility of advanced materials being considered for sodium reactor applications. This report gives the status of the sodium pumped loop at Argonne National Laboratory, the specimen details, and the technical approach to evaluate the sodium compatibility of advanced structural alloys. This report is a deliverable from ANL in FY2010 (M2GAN10SF050302) under the work package G-AN10SF0503 'Sodium Compatibility of Advanced Fast Reactor Materials.' Two reports were issued in 2009 (Natesan and Meimei Li 2009, Natesan et al. 2009) which examined the thermodynamic and kinetic factors involved in the purity of liquid sodium coolant for sodium reactor applications as well as the design specifications for the ANL pumped loop for testing advanced structural materials. Available information was presented on solubility of several metallic and nonmetallic elements along with a discussion of the possible mechanisms for the accumulation of impurities in sodium. That report concluded that the solubility of many metals in sodium is low (<1 part per million) in the temperature range of interest in sodium reactors and such trace amounts would not impact the mechanical integrity of structural materials and components. The earlier report also analyzed the solubility and transport mechanisms of nonmetallic elements such as oxygen, nitrogen, carbon, and hydrogen in laboratory sodium loops and in reactor systems such as Experimental Breeder Reactor-II, Fast Flux Test Facility, and

  14. Advanced Propulsion Research Interest in Materials for Propulsion

    NASA Technical Reports Server (NTRS)

    Cole, John

    2003-01-01

    This viewgraph presentation provides an overview of material science and technology in the area of propulsion energetics. The authors note that conventional propulsion systems are near peak performance and further refinements in manufacturing, engineering design and materials will only provide incremental increases in performance. Energetic propulsion technologies could potential solve the problems of energy storage density and energy-to-thrust conversion efficiency. Topics considered include: the limits of thermal propulsion systems, the need for energetic propulsion research, emerging energetic propulsion technologies, materials research needed for advanced propulsion, and potential research opportunities.

  15. Materials/manufacturing element of the Advanced Turbine System Program

    SciTech Connect

    Karnitz, M.A.; Devan, J.H.; Holcomb, R.S.; Ferber, M.K.; Harrison, R.W.

    1994-08-01

    One of the supporting elements of the Advanced Turbine Systems (ATS) Program is the materials/manufacturing technologies task. The objective of this element is to address critical materials issues for both industrial and utility gas turbines. DOE Oak Ridge Operations Office (ORO) will manage this element of the program, and a team from DOE-ORO and Oak Ridge National Laboratory is coordinating the planning for the materials/manufacturing effort. This paper describes that planning activity which is in the early stages.

  16. Ceramic matrix composites -- Advanced high-temperature structural materials

    SciTech Connect

    Lowden, R.A.; Ferber, M.K.; Hellmann, J.R.; Chawla, K.K.; DiPietro, S.G.

    1995-10-01

    This symposium on Ceramic Matrix Composites: Advanced High-Temperature Structural Materials was held at the 1994 MRS Fall Meeting in Boston, Massachusetts on November 28--December 2. The symposium was sponsored by the Department of Energy`s Office of Industrial Technology`s Continuous Fiber Ceramic Composites Program, the Air Force Office of Scientific Research, and NASA Lewis Research Center. Among the competing materials for advanced, high-temperature applications, ceramic matrix composites are leading candidates. The symposium was organized such that papers concerning constituents--fibers and matrices--were presented first, followed by composite processing, modeling of mechanical behavior, and thermomechanical testing. More stable reinforcements are necessary to enhance the performance and life of fiber-reinforced ceramic composites, and to ensure final acceptance of these materials for high-temperature applications. Encouraging results in the areas of polymer-derived SiC fibers and single crystal oxide filaments were given, suggesting composites with improved thermomechanical properties and stability will be realized in the near future. The significance of the fiber-matrix interface in the design and performance of these materials is evident. Numerous mechanical models to relate interface properties to composite behavior, and interpret test methods and data, were enthusiastically discussed. One issue of great concern for any advanced material for use in extreme environments is stability. This theme arose frequently throughout the symposium and was the topic of focus on the final day. Fifty nine papers have been processed separately for inclusion on the data base.

  17. Bridging Microstructure, Properties and Processing of Polymer Based Advanced Materials

    SciTech Connect

    Li, Dongsheng; Ahzi, Said; Khaleel, Mohammad A.

    2012-01-01

    This is a guest editorial for a special issue in Journal of Engineering Materials and Technology. The papers collected in this special issue emphasize significant challenges, current approaches and future strategies necessary to advance the development of polymer-based materials. They were partly presented at the symposium of 'Bridging microstructure, properties and processing of polymer based advanced materials' in the TMS 2011 annual conference meeting, which was held in San Diego, US, on Feb 28 to March 3, 2011. This symposium was organized by the Pacific Northwest National Laboratory (USA) and the Institute of Mechanics of Fluids and Solids of the University of Strasbourg (France). The organizers were D.S. Li, S. Ahzi, and M. Khaleel.

  18. High resolution computed tomography of advanced composite and ceramic materials

    NASA Technical Reports Server (NTRS)

    Yancey, R. N.; Klima, S. J.

    1991-01-01

    Advanced composite and ceramic materials are being developed for use in many new defense and commercial applications. In order to achieve the desired mechanical properties of these materials, the structural elements must be carefully analyzed and engineered. A study was conducted to evaluate the use of high resolution computed tomography (CT) as a macrostructural analysis tool for advanced composite and ceramic materials. Several samples were scanned using a laboratory high resolution CT scanner. Samples were also destructively analyzed at the locations of the scans and the nondestructive and destructive results were compared. The study provides useful information outlining the strengths and limitations of this technique and the prospects for further research in this area.

  19. Elevated Temperature Testing and Modeling of Advanced Toughened Ceramic Materials

    NASA Technical Reports Server (NTRS)

    Keith, Theo G.

    2005-01-01

    The purpose of this report is to provide a final report for the period of 12/1/03 through 11/30/04 for NASA Cooperative Agreement NCC3-776, entitled "Elevated Temperature Testing and Modeling of Advanced Toughened Ceramic Materials." During this final period, major efforts were focused on both the determination of mechanical properties of advanced ceramic materials and the development of mechanical test methodologies under several different programs of the NASA-Glenn. The important research activities made during this period are: 1. Mechanical properties evaluation of two gas-turbine grade silicon nitrides. 2) Mechanical testing for fuel-cell seal materials. 3) Mechanical properties evaluation of thermal barrier coatings and CFCCs and 4) Foreign object damage (FOD) testing.

  20. Advanced High-Temperature Engine Materials Technology Progresses

    NASA Technical Reports Server (NTRS)

    1995-01-01

    The objective of the Advanced High Temperature Engine Materials Technology Program (HITEMP) is to generate technology for advanced materials and structural analysis that will increase fuel economy, improve reliability, extend life, and reduce operating costs for 21st century civil propulsion systems. The primary focus is on fan and compressor materials (polymer-matrix composites--PMC's), compressor and turbine materials (superalloys, and metal-matrix and intermetallic-matrix composites--MMC's and IMC's) and turbine materials (ceramic-matrix composites--CMC's). These advanced materials are being developed by in-house researchers and on grants and contracts. NASA considers this program to be a focused materials and structures research effort that builds on our base research programs and supports component-development projects. HITEMP is coordinated with the Advanced Subsonic Technology (AST) Program and the Department of Defense/NASA Integrated High-Performance Turbine Engine Technology (IHPTET) Program. Advanced materials and structures technologies from HITEMP may be used in these future applications. Recent technical accomplishments have not only improved the state-of-the-art but have wideranging applications to industry. A high-temperature thin-film strain gage was developed to measure both dynamic and static strain up to 1100 C (2000 F). The gage's unique feature is that it is minimally intrusive. This technology, which received a 1995 R&D 100 Award, has been transferred to AlliedSignal Engines, General Electric Company, and Ford Motor Company. Analytical models developed at the NASA Lewis Research Center were used to study Textron Specialty Materials' manufacturing process for titanium-matrix composite rings. Implementation of our recommendations on tooling and processing conditions resulted in the production of defect free rings. In the Lincoln Composites/AlliedSignal/Lewis cooperative program, a composite compressor case is being manufactured with a Lewis

  1. Institute for Advanced Materials at University of Louisville

    SciTech Connect

    Sunkara, Mahendra; Sumaneskara, Gamini; Starr, Thomas L; Willing, G A; Robert W, Cohn

    2009-10-29

    In this project, a university-wide, academic center has been established entitled Institute for Advanced Materials and Renewable Energy. In this institute, a comprehensive materials characterization facility has been established by co-locating several existing characterization equipment and acquiring several state of the art instrumentation such as field emission transmission electron microscope, scanning electron microscope, high resolution X-ray diffractometer, Particle Size Distribution/Zeta Potential measurement system, and Ultra-microtome for TEM specimen. In addition, a renewable energy conversion and storage research facility was also established by acquiring instrumentation such as UV-Vis absorption spectroscopy, Atomic Layer Deposition reactor, Solar light simulator, oxygen-free glove box, potentiostat/galvanostats and other miscellaneous items. The institute is staffed with three full-time staff members (one senior research technologist, a senior PhD level research scientist and a junior research scientist) to enable proper use of the techniques. About thirty faculty, fifty graduate students and several researchers access the facilities on a routine basis. Several industry R&D organizations (SudChemie, Optical Dynamics and Hexion) utilize the facility. The established Institute for Advanced Materials at UofL has three main objectives: (a) enable a focused research effort leading to the rapid discovery of new materials and processes for advancing alternate energy conversion and storage technologies; (b) enable offering of several laboratory courses on advanced materials science and engineering; and (c) develop university-industry partnerships based on the advanced materials research. The Institute's efforts were guided by an advisory board comprising eminent researchers from outside KY. Initial research efforts were focused on the discovery of new materials and processes for solar cells and Li ion battery electrodes. Initial sets of results helped PIs to

  2. Recent Advances in Two-Dimensional Materials Beyond Graphene

    SciTech Connect

    Meunier, Vincent; Sumpter, Bobby G.; Terrones Maldonado, Mauricio; Terrones Maldonado, Humberto; Liang, Liangbo; Cooper, Valentino R.; Bhimanapati, Ganesh; Lin, Zhong; Jung, Yeongwoong; Cha, Judy; Das, Saptarshi; Xiao, Di; Son, Youngwoo; Strano, Michael; Louie, Steven G.; Ringe, Emilie; Xia, Fengnian; Wang, Yeliang; Akinwande, Deji; Zhu, Jun; Schuller, John; Schaak, Raymond; Robinson, Joshua A

    2015-11-06

    The isolation of graphene in 2004 by peeling apart the atomically-thin sheets that comprise graphite was a defining moment for the birth of a field: Two-dimensional (2D) materials. In recent years, there has been a rapidly increasing number of papers focusing on non-graphene layered materials, including transition-metal dichalcogenides (TMDs), because of the new properties and applications that emerge upon 2D confinement. Here we review significant recent advances and important new developments in 2D materials beyond graphene . We provide insight into the theoretical modeling and understanding of the van der Waals forces that hold together the 2D layers in bulk solids, as well as their excitonic properties and growth morphologies. Additionally, we highlight recent breakthroughs in TMD synthesis and characterization and discuss the newest families of 2D materials, including monoelement 2D materials (i.e., silicene, phosphorene, etc.) and transition metal carbide- and carbon nitride-based MXenes. We then discuss the doping and functionalization of 2D materials beyond graphene, which enable device applications, followed by advances in electronic, optoelectronic, and magnetic devices and theory. Finally, we provide perspectives on the future of 2D materials beyond graphene.

  3. Recent Advances in Two-Dimensional Materials Beyond Graphene

    DOE PAGESBeta

    Meunier, Vincent; Sumpter, Bobby G.; Terrones Maldonado, Mauricio; Terrones Maldonado, Humberto; Liang, Liangbo; Cooper, Valentino R.; Bhimanapati, Ganesh; Lin, Zhong; Jung, Yeongwoong; Cha, Judy; et al

    2015-11-06

    The isolation of graphene in 2004 by peeling apart the atomically-thin sheets that comprise graphite was a defining moment for the birth of a field: Two-dimensional (2D) materials. In recent years, there has been a rapidly increasing number of papers focusing on non-graphene layered materials, including transition-metal dichalcogenides (TMDs), because of the new properties and applications that emerge upon 2D confinement. Here we review significant recent advances and important new developments in 2D materials beyond graphene . We provide insight into the theoretical modeling and understanding of the van der Waals forces that hold together the 2D layers in bulkmore » solids, as well as their excitonic properties and growth morphologies. Additionally, we highlight recent breakthroughs in TMD synthesis and characterization and discuss the newest families of 2D materials, including monoelement 2D materials (i.e., silicene, phosphorene, etc.) and transition metal carbide- and carbon nitride-based MXenes. We then discuss the doping and functionalization of 2D materials beyond graphene, which enable device applications, followed by advances in electronic, optoelectronic, and magnetic devices and theory. Finally, we provide perspectives on the future of 2D materials beyond graphene.« less

  4. Recent Advances in Two-Dimensional Materials beyond Graphene.

    PubMed

    Bhimanapati, Ganesh R; Lin, Zhong; Meunier, Vincent; Jung, Yeonwoong; Cha, Judy; Das, Saptarshi; Xiao, Di; Son, Youngwoo; Strano, Michael S; Cooper, Valentino R; Liang, Liangbo; Louie, Steven G; Ringe, Emilie; Zhou, Wu; Kim, Steve S; Naik, Rajesh R; Sumpter, Bobby G; Terrones, Humberto; Xia, Fengnian; Wang, Yeliang; Zhu, Jun; Akinwande, Deji; Alem, Nasim; Schuller, Jon A; Schaak, Raymond E; Terrones, Mauricio; Robinson, Joshua A

    2015-12-22

    The isolation of graphene in 2004 from graphite was a defining moment for the "birth" of a field: two-dimensional (2D) materials. In recent years, there has been a rapidly increasing number of papers focusing on non-graphene layered materials, including transition-metal dichalcogenides (TMDs), because of the new properties and applications that emerge upon 2D confinement. Here, we review significant recent advances and important new developments in 2D materials "beyond graphene". We provide insight into the theoretical modeling and understanding of the van der Waals (vdW) forces that hold together the 2D layers in bulk solids, as well as their excitonic properties and growth morphologies. Additionally, we highlight recent breakthroughs in TMD synthesis and characterization and discuss the newest families of 2D materials, including monoelement 2D materials (i.e., silicene, phosphorene, etc.) and transition metal carbide- and carbon nitride-based MXenes. We then discuss the doping and functionalization of 2D materials beyond graphene that enable device applications, followed by advances in electronic, optoelectronic, and magnetic devices and theory. Finally, we provide perspectives on the future of 2D materials beyond graphene. PMID:26544756

  5. PREFACE: 7th EEIGM International Conference on Advanced Materials Research

    NASA Astrophysics Data System (ADS)

    Joffe, Roberts

    2013-12-01

    The 7th EEIGM Conference on Advanced Materials Research (AMR 2013) was held at Luleå University of Technology on the 21-22 March 2013 in Luleå, SWEDEN. This conference is intended as a meeting place for researchers involved in the EEIGM programme, in the 'Erasmus Mundus' Advanced Materials Science and Engineering Master programme (AMASE) and the 'Erasmus Mundus' Doctoral Programme in Materials Science and Engineering (DocMASE). This is great opportunity to present their on-going research in the various fields of Materials Science and Engineering, exchange ideas, strengthen co-operation as well as establish new contacts. More than 60 participants representing six countries attended the meeting, in total 26 oral talks and 19 posters were presented during two days. This issue of IOP Conference Series: Materials Science and Engineering presents a selection of articles from EEIGM-7 conference. Following tradition from previous EEIGM conferences, it represents the interdisciplinary nature of Materials Science and Engineering. The papers presented in this issue deal not only with basic research but also with applied problems of materials science. The presented topics include theoretical and experimental investigations on polymer composite materials (synthetic and bio-based), metallic materials and ceramics, as well as nano-materials of different kind. Special thanks should be directed to the senior staff of Division of Materials Science at LTU who agreed to review submitted papers and thus ensured high scientific level of content of this collection of papers. The following colleagues participated in the review process: Professor Lennart Walström, Professor Roberts Joffe, Professor Janis Varna, Associate Professor Marta-Lena Antti, Dr Esa Vuorinen, Professor Aji Mathew, Professor Alexander Soldatov, Dr Andrejs Purpurs, Dr Yvonne Aitomäki, Dr Robert Pederson. Roberts Joffe October 2013, Luleå Conference photograph EEIGM7 conference participants, 22 March 2013 The PDF

  6. Materials and Component Development for Advanced Turbine Systems

    SciTech Connect

    Alvin, M.A.; Pettit, F.; Meier, G.; Yanar, N.; Chyu, M.; Mazzotta, D.; Slaughter, W.; Karaivanov, V.; Kang, B.; Feng, C.; Chen, R.; Fu, T-C.

    2008-10-01

    In order to meet the 2010-2020 DOE Fossil Energy goals for Advanced Power Systems, future oxy-fuel and hydrogen-fired turbines will need to be operated at higher temperatures for extended periods of time, in environments that contain substantially higher moisture concentrations in comparison to current commercial natural gas-fired turbines. Development of modified or advanced material systems, combined with aerothermal concepts are currently being addressed in order to achieve successful operation of these land-based engines. To support the advanced turbine technology development, the National Energy Technology Laboratory (NETL) has initiated a research program effort in collaboration with the University of Pittsburgh (UPitt), and West Virginia University (WVU), working in conjunction with commercial material and coating suppliers as Howmet International and Coatings for Industry (CFI), and test facilities as Westinghouse Plasma Corporation (WPC) and Praxair, to develop advanced material and aerothermal technologies for use in future oxy-fuel and hydrogen-fired turbine applications. Our program efforts and recent results are presented.

  7. Synthesis and characterization of polymer matrix composite material with combination of ZnO filler and nata de coco fiber as a candidate of semiconductor material

    NASA Astrophysics Data System (ADS)

    Saputra, Asep Handaya; Anindita, Hana Nabila

    2015-12-01

    Synthesis of semiconductor composite using acrylic matrix filled with ZnO and nata de coco fiber has been conducted in this research. The purpose of this research is to obtain semiconductor composite material that has a good mechanical strength and thermal resistance. In situ polymerization method is used in this research and the composites are ready to be characterized after 12 hours. The main parameter that is characterized is the electric conductivity of the composite. Additional parameters are also characterized such as composite's elastic modulus and glass transition temperature. The composites that has been made in this research can be classified as semiconductor material because the conductivity is in the range of 10-8-103 S/cm. In general the addition of ZnO and nata de coco filler can increase the conductivity of the composite. The highest semiconductor characteristic in acrylic/ZnO composite is obtained from 30% volume filler that reach 3.4 x 10-7 S/cm. Similar with acrylic/ZnO composite, in acrylic/nata de coco fiber composite the highest semiconductor characteristic is also obtained from 30% volume filler that reach 1.15 x 10-7 S/cm. Combination of 20% volume of ZnO, 10% volume of nata de coco, and 70% volume of acrylic resulting in composite with electric conductivity of 1.92 x 10-7 S/cm. In addition, combination of ZnO and nata de coco fiber as filler in composite can also improve the characteristic of composite where composite with 20% volume of ZnO filler and 10% volume of nata de coco fiber resulting in composite with elastic modulus of 1.79 GPa and glass transition temperature of 175.73°C which is higher than those in acrylic/ZnO composite.

  8. Semiconductor systems utilizing materials that form rectifying junctions in both N and P-type doping regions, whether metallurgically or field induced, and methods of use

    DOEpatents

    Welch, James D.

    2000-01-01

    Disclosed are semiconductor systems, such as integrated circuits utilizing Schotky barrier and/or diffused junction technology, which semiconductor systems incorporate material(s) that form rectifying junctions in both metallurgically and/or field induced N and P-type doping regions, and methods of their use. Disclosed are Schottky barrier based inverting and non-inverting gate voltage channel induced semiconductor single devices with operating characteristics similar to multiple device CMOS systems and which can be operated as modulators, N and P-channel MOSFETS and CMOS formed therefrom, and (MOS) gate voltage controlled rectification direction and gate voltage controlled switching devices, and use of such material(s) to block parasitic current flow pathways. Simple demonstrative five mask fabrication procedures for inverting and non-inverting gate voltage channel induced semiconductor single devices with operating characteristics similar to multiple device CMOS systems are also presented.

  9. Synthesis and characterization of advanced materials for Navy applications

    SciTech Connect

    Covino, J.

    1993-12-31

    This paper addresses the synthesis of ceramics and ceramic coatings, via the sol-gel process for use in specific Navy applications. Among the specific applications are: coatings for electrocromic devices; laser gyro bodies, hermetic coatings for optical fibers for use in ocean environments; coating development for advanced light weight structural applications; and incorporation of organic and inorganic dyes in silica based ceramics for laser applications. It will also address the characterization of these systems as well as advanced structural materials with respect to durability, chemical stability, optical properties and other properties which are more specific to their applications and end use.

  10. Space processing of crystalline materials: A study of known methods of electrical characterization of semiconductors

    NASA Technical Reports Server (NTRS)

    Castle, J. G.

    1976-01-01

    A literature survey is presented covering nondestructive methods of electrical characterization of semiconductors. A synopsis of each technique deals with the applicability of the techniques to various device parameters and to potential in-flight use before, during, and after growth experiments on space flights. It is concluded that the very recent surge in the commercial production of large scale integrated circuitry and other semiconductor arrays requiring uniformity on the scale of a few microns, involves nondestructive test procedures which could well be useful to NASA for in-flight use in space processing.

  11. PREFACE: 6th EEIGM International Conference on Advanced Materials Research

    NASA Astrophysics Data System (ADS)

    Horwat, David; Ayadi, Zoubir; Jamart, Brigitte

    2012-02-01

    The 6th EEIGM Conference on Advanced Materials Research (AMR 2011) was held at the European School of Materials Engineering (EEIGM) on the 7-8 November 2011 in Nancy, France. This biennial conference organized by the EEIGM is a wonderful opportunity for all scientists involved in the EEIGM programme, in the 'Erasmus Mundus' Advanced Materials Science and Engineering Master programme (AMASE) and the 'Erasmus Mundus' Doctoral Programme in Materials Science and Engineering (DocMASE), to present their research in the various fields of Materials Science and Engineering. This conference is also open to other universities who have strong links with the EEIGM and provides a forum for the exchange of ideas, co-operation and future orientations by means of regular presentations, posters and a round-table discussion. This edition of the conference included a round-table discussion on composite materials within the Interreg IVA project '+Composite'. Following the publication of the proceedings of AMR 2009 in Volume 5 of this journal, it is with great pleasure that we present this selection of articles to the readers of IOP Conference Series: Materials Science and Engineering. Once again it represents the interdisciplinary nature of Materials Science and Engineering, covering basic and applicative research on organic and composite materials, metallic materials and ceramics, and characterization methods. The editors are indebted to all the reviewers for reviewing the papers at very short notice. Special thanks are offered to the sponsors of the conference including EEIGM-Université de Lorraine, AMASE, DocMASE, Grand Nancy, Ville de Nancy, Region Lorraine, Fédération Jacques Villermaux, Conseil Général de Meurthe et Moselle, Casden and '+Composite'. Zoubir Ayadi, David Horwat and Brigitte Jamart

  12. Photoelectrosynthesis at semiconductor electrodes

    SciTech Connect

    Nozik, A. J.

    1980-12-01

    The general principles of photoelectrochemistry and photoelectrosynthesis are reviewed and some new developments in photoelectrosynthesis are discussed. Topics include energetics of semiconductor-electrolyte interfaces(band-edge unpinning); hot carrier injection at illuminated semiconductor-electrolyte junctions; derivatized semiconductor electrodes; particulate photoelectrochemical systems; layered compounds and other new materials; and dye sensitization. (WHK)

  13. Photorefractive Semiconductors and Applications

    NASA Technical Reports Server (NTRS)

    Chen, Li-Jen; Luke, Keung L.

    1993-01-01

    Photorefractive semiconductors are attractive for information processing, becuase of fast material response, compatibility with semiconductor lasers, and availability of cross polarization diffraction for enhancing signal-to-noise ration. This paper presents recent experimental results on information processing using photorefractive GaAs, InP and CdTe, including image processing with semiconductor lasers.

  14. Semiconductor nanorod liquid crystals

    SciTech Connect

    Li, Liang-shi; Walda, Joost; Manna, Liberato; Alivisatos, A. Paul

    2002-01-28

    Rodlike molecules form liquid crystalline phases with orientational order and positional disorder. The great majority of materials in which liquid crystalline phases have been observed are comprised of organic molecules or polymers, even though there has been continuing and growing interest in inorganic liquid crystals. Recent advances in the control of the sizes and shapes of inorganic nanocrystals allow for the formation of a broad class of new inorganic liquid crystals. Here we show the formation of liquid crystalline phases of CdSe semiconductor nanorods. These new liquid crystalline phases may have great importance for both application and fundamental study.

  15. Analysis of Advanced Thermoelectric Materials and Their Functional Limits

    NASA Technical Reports Server (NTRS)

    Kim, Hyun Jung

    2015-01-01

    The world's demand for energy is increasing dramatically, but the best energy conversion systems operate at approximately 30% efficiency. One way to decrease energy loss is in the recovery of waste heat using thermoelectric (TE) generators. A TE generator is device that generates electricity by exploiting heat flow across a thermal gradient. The efficiency of a TE material for power generation and cooling is determined by the dimensionless Figure of Merit (ZT): ZT = S(exp. 2)sigmaT/?: where S is the Seebeck coefficient, sigma is the electrical conductivity, T is the absolute temperature, and ? is the thermal conductivity. The parameters are not physically independent, but intrinsically coupled since they are a function of the transport properties of electrons. Traditional research on TE materials has focused on synthesizing bulk semiconductor-type materials that have low thermal conductivity and high electrical conductivity affording ZT values of 1. The optimization of the s/? ratio is difficult to achieve using current material formats, as these material constants are complementary. Recent areas of research are focusing on using nanostructural artifacts that introduce specific dislocations and boundary conditions that scatter the phonons. This disrupts the physical link between thermal (phonon) and electrical (electron) transport. The result is that ? is decreased without decreasing s. These material formats give ZT values of up to 2 which represent approximately 18% energy gain from waste heat recovery. The next challenge in developing the next generation of TE materials with superior performance is to tailor the interconnected thermoelectric physical parameters of the material system. In order to approach this problem, the fundamental physics of each parameter S, sigma, and ? need to be physically understood in their context of electron/phonon interaction for the construction of new high ZT thermoelectric devices. Is it possible to overcome the physical limit

  16. Report on sodium compatibility of advanced structural materials.

    SciTech Connect

    Li, M.; Natesan, K.; Momozaki, Y.; Rink, D.L.; Soppet, W.K.; Listwan, J.T.

    2012-07-09

    This report provides an update on the evaluation of sodium compatibility of advanced structural materials. The report is a deliverable (level 3) in FY11 (M3A11AN04030403), under the Work Package A-11AN040304, 'Sodium Compatibility of Advanced Structural Materials' performed by Argonne National Laboratory (ANL), as part of Advanced Structural Materials Program for the Advanced Reactor Concepts. This work package supports the advanced structural materials development by providing corrosion and tensile data from the standpoint of sodium compatibility of advanced structural alloys. The scope of work involves exposure of advanced structural alloys such as G92, mod.9Cr-1Mo (G91) ferritic-martensitic steels and HT-UPS austenitic stainless steels to a flowing sodium environment with controlled impurity concentrations. The exposed specimens are analyzed for their corrosion performance, microstructural changes, and tensile behavior. Previous reports examined the thermodynamic and kinetic factors involved in the purity of liquid sodium coolant for sodium reactor applications as well as the design, fabrication, and construction of a forced convection sodium loop for sodium compatibility studies of advanced materials. This report presents the results on corrosion performance, microstructure, and tensile properties of advanced ferritic-martensitic and austenitic alloys exposed to liquid sodium at 550 C for up to 2700 h and at 650 C for up to 5064 h in the forced convection sodium loop. The oxygen content of sodium was controlled by the cold-trapping method to achieve {approx}1 wppm oxygen level. Four alloys were examined, G92 in the normalized and tempered condition (H1 G92), G92 in the cold-rolled condition (H2 G92), G91 in the normalized and tempered condition, and hot-rolled HT-UPS. G91 was included as a reference to compare with advanced alloy, G92. It was found that all four alloys showed weight loss after sodium exposures at 550 and 650 C. The weight loss of the four

  17. Technology Readiness Levels for Advanced Nuclear Fuels and Materials Development

    SciTech Connect

    Jon Carmack

    2014-01-01

    The Technology Readiness Level (TRL) process is used to quantitatively assess the maturity of a given technology. The TRL process has been developed and successfully used by the Department of Defense (DOD) for development and deployment of new technology and systems for defense applications. In addition, NASA has also successfully used the TRL process to develop and deploy new systems for space applications. Advanced nuclear fuels and materials development is a critical technology needed for closing the nuclear fuel cycle. Because the deployment of a new nuclear fuel forms requires a lengthy and expensive research, development, and demonstration program, applying the TRL concept to the advanced fuel development program is very useful as a management and tracking tool. This report provides definition of the technology readiness level assessment process as defined for use in assessing nuclear fuel technology development for the Advanced Fuel Campaign (AFC).

  18. Advanced Bioinks for 3D Printing: A Materials Science Perspective.

    PubMed

    Chimene, David; Lennox, Kimberly K; Kaunas, Roland R; Gaharwar, Akhilesh K

    2016-06-01

    Advanced bioinks for 3D printing are rationally designed materials intended to improve the functionality of printed scaffolds outside the traditional paradigm of the "biofabrication window". While the biofabrication window paradigm necessitates compromise between suitability for fabrication and ability to accommodate encapsulated cells, recent developments in advanced bioinks have resulted in improved designs for a range of biofabrication platforms without this tradeoff. This has resulted in a new generation of bioinks with high print fidelity, shear-thinning characteristics, and crosslinked scaffolds with high mechanical strength, high cytocompatibility, and the ability to modulate cellular functions. In this review, we describe some of the promising strategies being pursued to achieve these goals, including multimaterial, interpenetrating network, nanocomposite, and supramolecular bioinks. We also provide an overview of current and emerging trends in advanced bioink synthesis and biofabrication, and evaluate the potential applications of these novel biomaterials to clinical use. PMID:27184494

  19. Semiconductor nanowire thermoelectric materials and devices, and processes for producing same

    DOEpatents

    Lagally, Max G; Evans, Paul G; Ritz, Clark S

    2013-09-17

    The present invention provides nanowires and nanoribbons that are well suited for use in thermoelectric applications. The nanowires and nanoribbons are characterized by a periodic compositional longitudinal modulation. The nanowires are constructed using lithographic techniques from thin semiconductor membranes, or "nanomembranes."

  20. Semiconductor nanowire thermoelectric materials and devices, and processes for producing same

    DOEpatents

    Lagally, Max G.; Evans, Paul G.; Ritz, Clark S.

    2011-02-15

    The present invention provides nanowires and nanoribbons that are well suited for use in thermoelectric applications. The nanowires and nanoribbons are characterized by a periodic longitudinal modulation, which may be a compositional modulation or a strain-induced modulation. The nanowires are constructed using lithographic techniques from thin semiconductor membranes, or "nanomembranes."

  1. Semiconductor nanowire thermoelectric materials and devices, and processes for producing same

    DOEpatents

    Lagally, Max G.; Evans, Paul G.; Ritz, Clark S.

    2015-11-17

    The present invention provides nanowires and nanoribbons that are well suited for use in thermoelectric applications. The nanowires and nanoribbons are characterized by a periodic compositional longitudinal modulation. The nanowires are constructed using lithographic techniques from thin semiconductor membranes, or "nanomembranes."

  2. Mass and charge overlaps in beamline implantation into compound semiconductor materials

    SciTech Connect

    Current, M. I.; Eddy, R.; Hudak, C.; Serfass, J.; Mount, G.

    2012-11-06

    Mass overlaps occurring as a result of extraction of ions from an arc discharge and gas collisions, producing molecular break up and charge exchange in the accelerator beamline, are examined for ion implantation into compound semiconductors. The effects of the choice of plasma gas elements for Be{sup +} implants are examined as an example.

  3. Mass and charge overlaps in beamline implantation into compound semiconductor materials

    NASA Astrophysics Data System (ADS)

    Current, M. I.; Eddy, R.; Hudak, C.; Serfass, J.; Mount, G.

    2012-11-01

    Mass overlaps occurring as a result of extraction of ions from an arc discharge and gas collisions, producing molecular break up and charge exchange in the accelerator beamline, are examined for ion implantation into compound semiconductors. The effects of the choice of plasma gas elements for Be+ implants are examined as an example.

  4. Polymers as advanced materials for desiccant applications, 1988

    SciTech Connect

    Czanderna, A.W.; Neidlinger, H.H.

    1990-09-01

    This report documents work to identify a next-generation, low-cost material with which solar energy or heat from another low-cost energy source can be used for regenerating the water vapor sorption activity of the desiccant. The objective of the work is to determine how the desired sorption performance of advanced desiccant materials can be predicted by understanding the role of the material modifications and material surfaces. The work concentrates on solid materials to be used for desiccant cooling systems and which process water vapor in an atmosphere to produce cooling. The work involved preparing modifications of polystyrene sulfonic acid sodium salt, synthesizing a hydrogel, and evaluating the sorption performances of these and similar commercially available polymeric materials; all materials were studied for their potential application in solid commercial desiccant cooling systems. Background information is also provided on desiccant cooling systems and the role of a desiccant material within such a system, and it includes the use of polymers as desiccant materials. 31 refs., 16 figs., 5 tabs.

  5. Corrosion performance of materials for advanced combustion systems

    SciTech Connect

    Natesan, K.; Yanez-Herrero, M.; Fornasieri, C.

    1993-12-01

    Conceptual designs of advanced combustion systems that utilize coal as a feedstock require high-temperature furnaces and heat transfer surfaces capable of operating at more elevated temperatures than those prevalent in current coal-fired power plants. The combination of elevated temperatures and hostile combustion environments necessitates development/application of advanced ceramic materials in these designs. This report characterizes the chemistry of coal-fired combustion environments over the wide temperature range that is of interest in these systems and discusses preliminary experimental results on several materials (alumina, Hexoloy, SiC/SiC, SiC/Si{sub 3}N{sub 4}/Si{sub 3}N{sub 4}, ZIRCONIA, INCONEL 677 and 617) with potential for application in these systems.

  6. Mishap risk control for advanced aerospace/composite materials

    NASA Technical Reports Server (NTRS)

    Olson, John M.

    1994-01-01

    Although advanced aerospace materials and advanced composites provide outstanding performance, they also present several unique post-mishap environmental, safety, and health concerns. The purpose of this paper is to provide information on some of the unique hazards and concerns associated with these materials when damaged by fire, explosion, or high-energy impact. Additionally, recommended procedures and precautions are addressed as they pertain to all phases of a composite aircraft mishap response, including fire-fighting, investigation, recovery, clean-up, and guidelines are general in nature and not application-specific. The goal of this project is to provide factual and realistic information which can be used to develop consistent and effective procedures and policies to minimize the potential environmental, safety, and health impacts of a composite aircraft mishap response effort.

  7. Time-resolved THz studies of carrier dynamics in semiconductors, superconductors, and strongly-correlated electron materials

    SciTech Connect

    Kaindl, Robert A.; Averitt, Richard D.

    2006-11-14

    Perhaps the most important aspect of contemporary condensed matter physics involves understanding strong Coulomb interactions between the large number of electrons in a solid. Electronic correlations lead to the emergence of new system properties, such as metal-insulator transitions, superconductivity, magneto-resistance, Bose-Einstein condensation, the formation of excitonic gases, or the integer and fractional Quantum Hall effects. The discovery of high-Tc superconductivity in particular was a watershed event, leading to dramatic experimental and theoretical advances in the field of correlated-electron systems. Such materials often exhibit competition between the charge, lattice, spin, and orbital degrees of freedom, whose cause-effect relationships are difficult to ascertain. Experimental insight into the properties of solids is traditionally obtained by time-averaged probes, which measure e.g., linear optical spectra, electrical conduction properties, or the occupied band structure in thermal equilibrium. Many novel physical properties arise from excitations out of the ground state into energetically higher states by thermal, optical, or electrical means. This leads to fundamental interactions between the system's constituents, such as electron-phonon and electron-electron interactions, which occur on ultrafast timescales. While these interactions underlie the physical properties of solids, they are often only indirectly inferred from time-averaged measurements. Time-resolved spectroscopy, consequently, is playing an ever increasing role to provide insight into light-matter interaction, microscopic processes, or cause-effect relationships that determine the physics of complex materials. In the past, experiments using visible and near-infrared femtosecond pulses have been extensively employed, e.g. to follow relaxation and dephasing processes in metals and semiconductors. However, many basic excitations in strongly-correlated electron systems and nanoscale

  8. A combinatorial approach to the discovery of advanced materials

    NASA Astrophysics Data System (ADS)

    Sun, Xiao-Dong

    This thesis discusses the application of combinatorial methods to the search of advanced materials. The goal of this research is to develop a "parallel" or "fast sequential" methodology for both the synthesis and characterization of materials with novel electronic, magnetic and optical properties. Our hope is to dramatically accelerate the rate at which materials are generated and studied. We have developed two major combinatorial methodologies to this end. One involves generating thin film materials libraries using a combination of various thin film deposition and masking strategies with multi-layer thin film precursors. The second approach is to generate powder materials libraries with solution precursors delivered with a multi-nozzle inkjet system. The first step in this multistep combinatorial process involves the design and synthesis of high density libraries of diverse materials aimed at exploring a large segment of the compositional space of interest based on our understanding of the physical and structural properties of a particular class of materials. Rapid, sensitive measurements of one or more relevant physical properties of each library member result in the identification of a family of "lead" compositions with a desired property. These compositions are then optimized by continuously varying the stoichiometries of a more focused set of precursors. Materials with the optimal composition are then synthesized in quantities sufficient for detailed characterization of their structural and physical properties. Finally, the information obtained from this process should enhance our predictive ability in subsequent experiments. Combinatorial methods have been successfully used in the synthesis and discovery of materials with novel properties. For example, a class of cobaltite based giant magnetoresistance (GMR) ceramics was discovered; Application of this method to luminescence materials has resulted in the discovery of a few highly efficient tricolor

  9. Silicon as an advanced window material for high power gyrotrons

    SciTech Connect

    Parshin, V.V.; Andreev, B.A.; Gusev, A.V.

    1995-05-01

    The absorptivity of high-purity grades of silicon (Si) and its reduction by subsequent doping procedures are investigated. The dielectric data are given for the wide range of frequencies (30 -330 GHz) and temperatures (30 -330 K) in comparison with the data set for sapphire. The advanced material performance in high power window applications is discussed taking into account both dielectric properties of the optimized silicon grades and thermal conductivity.

  10. ADVANCED HOT SECTION MATERIALS AND COATINGS TEST RIG

    SciTech Connect

    Scott Reome; Dan Davies

    2004-01-01

    The Hyperbaric Advanced Hot Section Materials & Coating Test Rig program initiated this quarter, provides design and implementation of a laboratory rig capable of simulating the hot gas path conditions of coal-gas fired industrial gas turbine engines. The principle activity during this first reporting period were preparing for and conducting a project kick-off meeting, working through plans for the project implementation, and beginning the conceptual design of the test section.

  11. Materials Advances to Enhance Development of Geothermal Power

    SciTech Connect

    Kukacka, Lawrence E.

    1989-03-21

    In order to assure the continued development of geothermal resources, many advances in materials technology are required so that high costs resulting from the severe environments encountered during drilling, well completion and energy extraction can be reduced. These needs will become more acute as higher temperature and chemically aggressive fluids are encountered. High priority needs are for lost circulation control and lightweight well completion materials, and tools such as drill pipe protectors, rotating head seals, blow-out preventers, and downhole drill motors. The lack of suitable hydrolytically stable chemical systems that can bond previously developed elastomers to metal reinforcement is a critical but as yet unaddressed impediment to the development of these tools. In addition, the availability of low cost corrosion and scale-resistant tubular lining materials would greatly enhance transport and energy extraction processes utilizing hypersaline brines. Work to address these materials needs is underway at Brookhaven National Laboratory (BNL), and recent accomplishments are summarized in the paper.

  12. ADVANCED ELECTRIC AND MAGNETIC MATERIAL MODELS FOR FDTD ELECTROMAGNETIC CODES

    SciTech Connect

    Poole, B R; Nelson, S D; Langdon, S

    2005-05-05

    The modeling of dielectric and magnetic materials in the time domain is required for pulse power applications, pulsed induction accelerators, and advanced transmission lines. For example, most induction accelerator modules require the use of magnetic materials to provide adequate Volt-sec during the acceleration pulse. These models require hysteresis and saturation to simulate the saturation wavefront in a multipulse environment. In high voltage transmission line applications such as shock or soliton lines the dielectric is operating in a highly nonlinear regime, which require nonlinear models. Simple 1-D models are developed for fast parameterization of transmission line structures. In the case of nonlinear dielectrics, a simple analytic model describing the permittivity in terms of electric field is used in a 3-D finite difference time domain code (FDTD). In the case of magnetic materials, both rate independent and rate dependent Hodgdon magnetic material models have been implemented into 3-D FDTD codes and 1-D codes.

  13. [Advances of poly (ionic liquid) materials in separation science].

    PubMed

    Liu, Cuicui; Guo, Ting; Su, Rina; Gu, Yuchen; Deng, Qiliang

    2015-11-01

    Ionic liquids, as novel ionization reagents, possess beneficial characteristics including good solubility, conductivity, thermal stability, biocompatibility, low volatility and non-flammability. Ionic liquids are attracting a mass of attention of analytical chemists. Poly (ionic liquid) materials have common performances of ionic liquids and polymers, and have been successfully applied in separation science area. In this paper, we discuss the interaction mechanisms between the poly(ionic liquid) materials and analytes including hydrophobic/hydrophilic interactions, hydrogen bond, ion exchange, π-π stacking and electrostatic interactions, and summarize the application advances of the poly(ionic liquid) materials in solid phase extraction, chromatographic separation and capillary electrophoresis. At last, we describe the future prospect of poly(ionic liquid) materials. PMID:26939357

  14. Ultrasonic and radiographic evaluation of advanced aerospace materials: Ceramic composites

    NASA Technical Reports Server (NTRS)

    Generazio, Edward R.

    1990-01-01

    Two conventional nondestructive evaluation techniques were used to evaluate advanced ceramic composite materials. It was shown that neither ultrasonic C-scan nor radiographic imaging can individually provide sufficient data for an accurate nondestructive evaluation. Both ultrasonic C-scan and conventional radiographic imaging are required for preliminary evaluation of these complex systems. The material variations that were identified by these two techniques are porosity, delaminations, bond quality between laminae, fiber alignment, fiber registration, fiber parallelism, and processing density flaws. The degree of bonding between fiber and matrix cannot be determined by either of these methods. An alternative ultrasonic technique, angular power spectrum scanning (APSS) is recommended for quantification of this interfacial bond.

  15. Advanced materials and biochemical processes for geothermal applications

    SciTech Connect

    Kukacka, L.E.; van Rooyen, D.; Premuzic, E.T.

    1987-04-01

    Two Geothermal Technology Division (GTD)-sponsored programs: (1) Geothermal Materials Development, and (2) Advanced Biochemical Processes for Geothermal Brines, are described. In the former, work in the following tasks is in progress: (1) high temperature elastomeric materials for dynamic sealing applications, (2) advanced high temperature (300/sup 0/C) lightweight (1.1 g/cc) well cementing materials, (3) thermally conductive composites for heat exchanger tubing, (4) corrosion rates for metals in brine-contaminated binary plant working fluids, and (5) elastomeric liners for well casing. Methods for the utilization and/or the low cost environmentally acceptable disposal of toxic geothermal residues are being developed in the second program. This work is performed in two tasks. In one, microorganisms that can interact with toxic metals found in geothermal residues to convert them into soluble species for subsequent reinjection back into the reservoir or to concentrate them for removal by conventional processes are being identified. In the second task, process conditions are being defined for the encapsulation of untreated or partially biochemically treated residues in Portland cement-based formulations and the subsequent utilization of the waste fractions in building materials. Both processing methods yield materials which appear to meet disposal criteria for non-toxic solid waste, and their technical and economic feasibilities have been established.

  16. Quantum size effects in layered VX2 (X = S, Se) materials: Manifestation of metal to semimetal or semiconductor transition

    NASA Astrophysics Data System (ADS)

    Wasey, A. H. M. Abdul; Chakrabarty, Soubhik; Das, G. P.

    2015-02-01

    Most of the two dimensional (2D) transition metal dichalcogenides (TMDC) are nonmagnetic in pristine form. However, 2D pristine VX2 (X = S, Se, Te) materials are found to be ferromagnetic. Using spin polarized density functional theory (DFT) calculations, we have studied the electronic, magnetic, and surface properties of this class of materials in both trigonal prismatic H- and octahedral T-phase. Our calculations reveal that they exhibit materially different properties in those two polymorphs. Most importantly, detailed investigation of electronic structure explored the quantum size effect in H-phase of these materials thereby leading to metal to semimetal (H-VS2) or semiconductor (H-VSe2) transition when downsizing from bilayer to corresponding monolayer.

  17. Sol-gel Technology and Advanced Electrochemical Energy Storage Materials

    NASA Technical Reports Server (NTRS)

    Chu, Chung-tse; Zheng, Haixing

    1996-01-01

    Advanced materials play an important role in the development of electrochemical energy devices such as batteries, fuel cells, and electrochemical capacitors. The sol-gel process is a versatile solution for use in the fabrication of ceramic materials with tailored stoichiometry, microstructure, and properties. This processing technique is particularly useful in producing porous materials with high surface area and low density, two of the most desirable characteristics for electrode materials. In addition,the porous surface of gels can be modified chemically to create tailored surface properties, and inorganic/organic micro-composites can be prepared for improved material performance device fabrication. Applications of several sol-gel derived electrode materials in different energy storage devices are illustrated in this paper. V2O5 gels are shown to be a promising cathode material for solid state lithium batteries. Carbon aerogels, amorphous RuO2 gels and sol-gel derived hafnium compounds have been studied as electrode materials for high energy density and high power density electrochemical capacitors.

  18. Channel Strain in Advanced Complementary Metal-Oxide-Semiconductor Field Effect Transistors Measured Using Nano-Beam Electron Diffraction

    NASA Astrophysics Data System (ADS)

    Toda, Akio; Nakamura, Hidetatsu; Fukai, Toshinori; Ikarashi, Nobuyuki

    2008-04-01

    Using high-precision nano-beam electron diffraction (NBD), we clarified the influences of stress liner and the stress of shallow trench isolation on channel strain in advanced metal-oxide-semiconductor field effect transistors (MOSFETs). For systematic strain measurements, we improved the precision of NBD by observing large reciprocal lattice vectors under appropriate diffraction conditions. The absolute value of the channel strain increases by stress liner as gate length decreases, although the drive current increase due to stress liner saturates at a shorter channel length. The normal strain in the gate length direction is inversely proportional to the distance from the gate electrode to the shallow trench isolation (STI). Furthermore, the relationship between measured channel strain induced by STI and drive current change was shown. The drive current of n- and p-MOSFET changes about 5% with 2×10-3 channel strain variation. This result suggests that reducing the shallow trench isolation stress is effective for controlling the drive current change, depending on the active region layout. We conclude that the experimental measurement of channel strain is necessary for device and circuit design.

  19. 2010 Defects in Semiconductors GRC

    SciTech Connect

    Shengbai Zhang

    2011-01-06

    Continuing its tradition of excellence, this Gordon Conference will focus on research at the forefront of the field of defects in semiconductors. The conference will have a strong emphasis on the control of defects during growth and processing, as well as an emphasis on the development of novel defect detection methods and first-principles defect theories. Electronic, magnetic, and optical properties of bulk, thin film, and nanoscale semiconductors will be discussed in detail. In contrast to many conferences, which tend to focus on specific semiconductors, this conference will deal with point and extended defects in a broad range of electronic materials. This approach has proved to be extremely fruitful for advancing fundamental understanding in emerging materials such as wide-band-gap semiconductors, oxides, sp{sup 2} carbon based-materials, and photovoltaic/solar cell materials, and in understanding important defect phenomena such as doping bottleneck in nanostructures and the diffusion of defects and impurities. The program consists of about twenty invited talks and a number of contributed poster sessions. The emphasis should be on work which has yet to be published. The large amount of discussion time provides an ideal forum for dealing with topics that are new and/or controversial.

  20. Comparison of Wide-Bandgap Semiconductors for Power Electronics Applications

    SciTech Connect

    Ozpineci, B.

    2004-01-02

    Recent developmental advances have allowed silicon (Si) semiconductor technology to approach the theoretical limits of the Si material; however, power device requirements for many applications are at a point that the present Si-based power devices cannot handle. The requirements include higher blocking voltages, switching frequencies, efficiency, and reliability. To overcome these limitations, new semiconductor materials for power device applications are needed. For high power requirements, wide-bandgap semiconductors like silicon carbide (SiC), gallium nitride (GaN), and diamond, with their superior electrical properties, are likely candidates to replace Si in the near future. This report compares wide-bandgap semiconductors with respect to their promise and applicability for power applications and predicts the future of power device semiconductor materials.

  1. Design of hybrid conjugated polymer materials: 1) Novel inorganic/organic hybrid semiconductors and 2) Surface modification via grafting approaches

    NASA Astrophysics Data System (ADS)

    Peterson, Joseph J.

    The research presented in this dissertation focuses on the design and synthesis of novel hybrid conjugated polymer materials using two different approaches: (1) inorganic/organic hybrid semiconductors through the incorporation of carboranes into the polymer structure and (2) the modification of surfaces with conjugated polymers via grafting approaches. Hybrid conjugated polymeric materials, which are materials or systems in which conjugated polymers are chemically integrated with non-traditional structures or surfaces, have the potential to harness useful properties from both components of the material to help overcome hurdles in their practical realization in polymer-based devices. This work is centered around the synthetic challenges of creating new hybrid conjugated systems and their potential for advancing the field of polymer-based electronics through both greater understanding of the behavior of hybrid systems, and access to improved performance and new applications. Chapter 1 highlights the potential applications and advantages for these hybrid systems, and provides some historical perspective, along with relevant background materials, to illustrate the rationale behind this work. Chapter 2 explores the synthesis of poly(fluorene)s with pendant carborane cages. The Ni(0) dehalogenative polymerization of a dibromofluorene with pendant carborane cages tethered to the bridging 9-position produced hybrid polymers produced polymers which combined the useful emissive characteristics of poly(fluorene) with the thermal and chemical stability of carborane cages. The materials were found to display increased glass transition temperatures and showed improved emission color stability after annealing at high temperatures relative to the non-hybrid polymer. The design and synthesis of a poly(fluorene)-based hybrid material with carborane cages in the backbone, rather than as pendant groups, begins in chapter 3. Poly(fluorene) with p-carborane in the backbone is

  2. Method and apparatus for electron-only radiation detectors from semiconductor materials

    SciTech Connect

    Lund, James C.

    2000-01-01

    A system for obtaining improved resolution in room temperature semiconductor radiation detectors such as CdZnTe and Hgl.sub.2, which exhibit significant hole-trapping. A electrical reference plane is established about the perimeter of a semiconductor crystal and disposed intermediately between two oppositely biased end electrodes. The intermediate reference plane comprises a narrow strip of wire in electrical contact with the surface of the crystal, biased at a potential between the end electrode potentials and serving as an auxiliary electrical reference for a chosen electrode--typically the collector electrode for the more mobile charge carrier. This arrangement eliminates the interfering effects of the less mobile carriers as these are gathered by their electrode collector.

  3. Rare Earth Doped Semiconductors and Materials Research Society Symposium Proceedings, Volume 301

    NASA Astrophysics Data System (ADS)

    Ballance, John

    1994-02-01

    The properties of rare earth ions in solids were studied in detail for decades, but until recently this work was restricted to dominantly ionic hosts such as fluorides and oxides, and to a lesser extent to more covalently bonded hosts, such as tetrahedral 2-6 semiconductors. The idea of rare earth elements incorporated into covalent semiconductors such as GaAs and Si may be traced to a short communication in 1963 by R.L. Bell (J. Appl. Phys. 34, 1563 (1963)) proposing a dc-pumped rare earth laser. At about the same time, three unpublished technical reports appeared as a result of U.S. Department of Defense sponsored research in rare earth doped Si, GaAs, and InP to fabricate LED's. Attempts by other researchers to identify sharp 4f specific emissions in these hosts essentially failed.

  4. Advanced thermoplastic materials for district heating piping systems

    SciTech Connect

    Raske, D.T.; Karvelas, D.E.

    1988-04-01

    The work described in this report represents research conducted in the first year of a three-year program to assess, characterize, and design thermoplastic piping for use in elevated-temperature district heating (DH) systems. The present report describes the results of a program to assess the potential usefulness of advanced thermoplastics as piping materials for use in DH systems. This includes the review of design rules for thermoplastic materials used as pipes, a survey of candidate materials and available mechanical properties data, and mechanical properties testing to obtain baseline data on a candidate thermoplastic material extruded as pipe. The candidate material studied in this phase of the research was a polyetherimide resin, Ultem 1000, which has a UL continuous service temperature rating of 338/degree/F (170/degree/C). The results of experiments to determine the mechanical properties between 68 and 350/degree/F (20 and 177/degree/C) were used to establish preliminary design values for this material. Because these prototypic pipes were extruded under less than optimal conditions, the mechanical properties obtained are inferior to those expected from typical production pipes. Nevertheless, the present material in the form of 2-in. SDR 11 pipe (2.375-in. O. D. by 0.216-in. wall) would have a saturated water design pressure rating of /approximately/34 psig at 280/degree/F. 16 refs., 6 figs., 8 tabs.

  5. Advanced composite structural concepts and materials technologies for primary aircraft structures: Advanced material concepts

    NASA Technical Reports Server (NTRS)

    Lau, Kreisler S. Y.; Landis, Abraham L.; Chow, Andrea W.; Hamlin, Richard D.

    1993-01-01

    To achieve acceptable performance and long-term durability at elevated temperatures (350 to 600 F) for high-speed transport systems, further improvements of the high-performance matrix materials will be necessary to achieve very long-term (60,000-120,000 service hours) retention of mechanical properties and damage tolerance. This report emphasizes isoimide modification as a complementary technique to semi-interpenetrating polymer networks (SIPN's) to achieve greater processibility, better curing dynamics, and possibly enhanced thermo-mechanical properties in composites. A key result is the demonstration of enhanced processibility of isoimide-modified linear and thermo-setting polyimide systems.

  6. Area Reports. Advanced materials and devices research area. Silicon materials research task, and advanced silicon sheet task

    NASA Technical Reports Server (NTRS)

    1986-01-01

    The objectives of the Silicon Materials Task and the Advanced Silicon Sheet Task are to identify the critical technical barriers to low-cost silicon purification and sheet growth that must be overcome to produce a PV cell substrate material at a price consistent with Flat-plate Solar Array (FSA) Project objectives and to overcome these barriers by performing and supporting appropriate R&D. Progress reports are given on silicon refinement using silane, a chemical vapor transport process for purifying metallurgical grade silicon, silicon particle growth research, and modeling of silane pyrolysis in fluidized-bed reactors.

  7. Characterization and Application of Colloidal Nanocrystalline Materials for Advanced Photovoltaics

    NASA Astrophysics Data System (ADS)

    Bhandari, Khagendra P.

    Solar energy is Earth's primary source of renewable energy and photovoltaic solar cells enable the direct conversion of sunlight into electricity. Crystalline silicon solar cells and modules have dominated photovoltaic technology from the beginning and they now constitute more than 90% of the PV market. Thin film (CdTe and CIGS) solar cells and modules come in second position in market share. Some organic, dye-sensitized and perovskite solar cells are emerging in the market but are not yet in full commercial scale. Solar cells made from colloidal nanocrystalline materials may eventually provide both low cost and high efficiency because of their promising properties such as high absorption coefficient, size tunable band gap, and quantum confinement effect. It is also expected that the greenhouse gas emission and energy payback time from nanocrystalline solar PV systems will also be least compared to all other types of PV systems mainly due to the least embodied energy throughout their life time. The two well-known junction architectures for the fabrication of quantum dot based photovoltaic devices are the Schottky junction and heterojunction. In Schottky junction cells, a heteropartner semiconducting material is not required. A low work function metal is used as the back contact, a transparent conducting layer is used as the front contact, and the layer of electronically-coupled quantum dots is placed between these two materials. Schottky junction solar cells explain the usefulness of nanocrystalline materials for high efficiency heterojunction solar cells. For heterojunction devices, n-type semiconducting materials such as ZnO , CdS or TiO2 have been used as suitable heteropartners. Here, PbS quantum dot solar cells were fabricated using ZnO and CdS semiconductor films as window layers. Both of the heteropartners are sputter-deposited onto TCO coated glass substrates; ZnO was deposited with the substrate held at room temperature and for CdS the substrate was at 250

  8. Extended line defects in BN, GaN, and AlN semiconductor materials: Graphene-like structures

    NASA Astrophysics Data System (ADS)

    Camacho-Mojica, Dulce C.; López-Urías, Florentino

    2016-05-01

    The extended line defect (ELD) mimicking grain boundaries in two-dimensional systems is theoretically investigated in BN, GaN, and AlN semiconductor materials with a single layer honeycomb structure. The ELD consists of octagonal-square membered rings. Density functional calculations of the electronic density of states, scanning tunneling microscopy and transmission electron microscopy image simulations are analyzed. Our results revealed that the ELDs are stable in all considered monolayers. In addition, electronic density of states calculations demonstrated that in gap states are emerged when ELD is incorporated into the honeycomb structures. Finally, results on armchair nanoribbons with bare-edges and hydrogenated edges are discussed.

  9. Forming heterojunctions at the nanoscale for improved photoelectrochemical water splitting by semiconductor materials: case studies on hematite.

    PubMed

    Mayer, Matthew T; Lin, Yongjing; Yuan, Guangbi; Wang, Dunwei

    2013-07-16

    In order for the future energy needs of humanity to be adequately and sustainably met, alternative energy techniques such as artificial photosynthesis need to be made more efficient and therefore commercially viable. On a grand scale, the energies coming to and leaving from the earth are balanced. With the fast increasing waste heat produced by human activities, the balance may be shifted to threaten the ecosystem in which we reside. To avoid such dire consequences, it is necessary to power human activities using energy derived from the incoming source, which is predominantly solar irradiation. Indeed, most life on the surface of the earth is supported, directly or indirectly, by photosynthesis that harvests solar energy and stores it in chemical bonds for redistribution. Being able to mimic the process and perform it at high efficiencies using low-cost materials has significant implications. Such an understanding is a major intellectual driving force that motivates research by us and many others. From a thermodynamic perspective, the key energy conversion step in natural photosynthesis happens in the light reactions, where H₂O splits to give O₂ and reactive protons. The capability of carrying out direct sunlight-driven water splitting with high efficiency is therefore fundamentally important. We are particularly interested in doing so using inorganic semiconductor materials because they offer the promise of durability and low cost. In this Account, we share our recent efforts in bringing semiconductor-based water splitting reactions closer to reality. More specifically, we focus on earth-abundant oxide semiconductors such as Fe₂O₃ and work on improving the performance of these materials as photoelectrodes for photoelectrochemical reactions. Using hematite (α-Fe₂O₃) as an example, we examine how the main problems that limit the performance, namely, the short hole collection distance, poor light absorption near the band edge, and mismatch of the band

  10. Toward High Performance Integrated Semiconductor Micro and Nano Lasers Enabled by Transparent Conducting Materials: from Thick Structure to Thin Film

    NASA Astrophysics Data System (ADS)

    Ou, Fang

    Integrated semiconductor lasers working at the wavelength around 1.3 microm and 1.55 microm are of great interest for the research of photonic integrated circuit (PIC) since they are the crucial components for optical communications and many other applications. To satisfy the requirement of the next generation optical communication and computing systems, integrated semiconductor lasers are expected to have high device performance like very low lasing threshold, high output powers, high speed and possibility of being integrated with electronics. This dissertation focuses on the design and realization of InP based high performance electrically pumped integrated semiconductor lasers. In the dissertation, we first design the tall structure based electrically pumped integrated micro-lasers. Those lasers are capable of giving >10 mW output power with a moderate low threshold current density (0.5--5 kA/cm 2). Besides, a new enhanced radiation loss based coupler design is demonstrated to realize single directional output for curvilinear cavities. Second, the thin film structure based integrated semiconductor laser designs are proposed. Both structures use the side conduction geometry to enable the electrical injection into the thin film laser cavity. The performance enhancement of the thin film structure based lasers is analyzed compared to the tall structure. Third, we investigate the TCO materials. CdO deposited by PLD and In 2O3 deposited by IAD are studied from aspects of their physical, optical and electrical properties. Those materials can give a wide range of tunability in their conductivity (1--5000 S/cm) and optical transparency (loss 200--5000 cm-1), which is of great interest in realizing novel nanophotonic devices. In addition, the electrical contact properties of those materials to InP are also studied. Experiment result shows that both CdO and In2O3 can achieve good ohmic contact to n-InP with contact resistance as low as 10-6O·cm 2. At last, we investigate

  11. 3D-profile measurement of advanced semiconductor features by reference metrology

    NASA Astrophysics Data System (ADS)

    Takamasu, Kiyoshi; Iwaki, Yuuki; Takahashi, Satoru; Kawada, Hiroki; Ikota, Masami; Lorusso, Gian F.; Horiguchi, Naoto

    2016-03-01

    A method of sub-nanometer uncertainty for the 3D-profile measurement using TEM (Transmission Electron Microscope) images is proposed to standardize 3D-profile measurement through reference metrology. The proposed method has been validated for profiles of Si lines, photoresist features and advanced-FinFET (Fin-shaped Field-Effect Transistor) features in our previous investigations. However, efficiency of 3D-profile measurement using TEM is limited by measurement time including processing of the sample. In this article, we demonstrate a novel on-wafer 3D-profile metrology as "FIB-to-CDSEM method" with FIB (Focused Ion Beam) slope cut and CD-SEM (Critical Dimension Secondary Electron Microscope) measuring. Using the method, a few micrometer wide on a wafer is coated and cut by 45 degree slope using FIB tool. Then, the wafer is transferred to CD-SEM to measure the cross section image by top down CD-SEM measurement. We apply FIB-to-CDSEM method to CMOS sensor device. 3D-profile and 3D-profile parameters such as top line width and side wall angles of CMOS sensor device are evaluated. The 3D-profile parameters also are measured by TEM images as reference metrology. We compare the 3D-profile parameters by TEM method and FIB-to-CDSEM method. The average values and correlations on the wafer are agreed well between TEM and FIB-to- CDSEM methods.

  12. Expanding the Scope of Thiophene Based Semiconductors: Perfluoroalkylated Materials and Fused Thienoacenes

    NASA Astrophysics Data System (ADS)

    Black, Hayden Thompson

    Thiophene based semiconductors with new molecular and macromolecular structures were explored for applications in field effect transistors. Perfluoroalkylation was studied both as a means for controlling the self-assembly properties of polythiophenes, as well as modifying the molecular orbital energies of a series of oligothiophenes. End-perfluoroalkylation of poly(3-hexylthiophene) resulted in interesting self-assembly of the polymer into a bilayer vesicle. Similar fluorophilic assembly may be useful for controlling blend morphologies in heterojunction based devices. On the other hand, perfluoroalkylation of small molecule thiophene semiconductors leads to low lying LUMO levels, and can be used to promote electron injection for n-type transistor devices. This strategy was employed in combination with a pi-electron deficient benzothiadiazole to afford a new n-type semiconductor with an exceptionally low LUMO. Monoperfluoroalkylated oligothiophenes were also synthesized and studied in field effect transistors for the first time. In addition, two new fused thienoacene compounds were synthesized and their crystal structures were analyzed. The fused compounds showed exceptional pi-pi stacking and assembled into well defined one-dimensional microcrystals from the vapor phase. Field effect transistors were fabricated employing the new thienoacenes, showing p-type conductivity with equivalent charge carrier mobilities.

  13. Atomic and electronic structure of interfaces in materials systems for future semiconductor devices

    NASA Astrophysics Data System (ADS)

    Lopatin, Sergei

    Because of the intrinsic limits of the Si/SiO2 based industry, there is a great trend towards the monolithic integration of new materials into already well developed silicon technology. Having lasted for several decades now, downscaling reaches the limit, in which a critical device dimension approaches the size of one atom. At this level of the miniaturization, it is not the bulk material, but the interface between the two materials that what controls the properties of the resulting optoelectronic device. Thus, the characterization of precise atomic arrangements at different interfaces and the influence of these arrangements on the optoelectronic properties of interfaces is required. Therefore, in this study, a combination of scanning transmission electron microscopy (STEM) techniques and density functional theory calculations was used as a research tool for the characterization of interfaces. The STEM instruments used for the study were equipped with prototypes of spherical aberration correctors, enabling to achieve the highest resolution currently available both in space and energy. The combination of experimental and theoretical methods was applied to study interfaces between Si/GaAs, Si/Ge, Ge/SiO2, Si/HfO2 and Si/Al2O3. As the result of the present research, a new dislocation configuration at the Si/GaAs interface was reported for the first time. The influence of this dislocation structure on the electrical properties of the Si/GaAs interface was analyzed. Also, the transition from Si to GaAs and from Si to Ge at corresponding interfaces was described with atomic precision. For the first time, the interface between Ge and SiO2 was shown to have "ideal" characteristics (chemical abruptness and sharpness). This indicates the potential, both for a more successful use of Ge in high-speed devices and for advances in interface engineering to enhance performance in electronic devices. The features of Si/HfO2 and Si/Al2O3 interfaces, namely the distribution and

  14. Advanced Materials for Mercury 50 Gas Turbine Combustion System

    SciTech Connect

    Price, Jeffrey

    2008-09-30

    Solar Turbines Incorporated (Solar), under cooperative agreement number DE-FC26-0CH11049, has conducted development activities to improve the durability of the Mercury 50 combustion system to 30,000 hours life and reduced life cycle costs. This project is part of Advanced Materials in the Advanced Industrial Gas Turbines program in DOE's Office of Distributed Energy. The targeted development engine was the Mercury{trademark} 50 gas turbine, which was developed by Solar under the DOE Advanced Turbine Systems program (DOE contract number DE-FC21-95MC31173). As a generator set, the Mercury 50 is used for distributed power and combined heat and power generation and is designed to achieve 38.5% electrical efficiency, reduced cost of electricity, and single digit emissions. The original program goal was 20,000 hours life, however, this goal was increased to be consistent with Solar's standard 30,000 hour time before overhaul for production engines. Through changes to the combustor design to incorporate effusion cooling in the Generation 3 Mercury 50 engine, which resulted in a drop in the combustor wall temperature, the current standard thermal barrier coated liner was predicted to have 18,000 hours life. With the addition of the advanced materials technology being evaluated under this program, the combustor life is predicted to be over 30,000 hours. The ultimate goal of the program was to demonstrate a fully integrated Mercury 50 combustion system, modified with advanced materials technologies, at a host site for a minimum of 4,000 hours. Solar was the Prime Contractor on the program team, which includes participation of other gas turbine manufacturers, various advanced material and coating suppliers, nationally recognized test laboratories, and multiple industrial end-user field demonstration sites. The program focused on a dual path development route to define an optimum mix of technologies for the Mercury 50 and future gas turbine products. For liner and injector

  15. Materials Advances for Next-Generation Ingestible Electronic Medical Devices.

    PubMed

    Bettinger, Christopher J

    2015-10-01

    Electronic medical implants have collectively transformed the diagnosis and treatment of many diseases, but have many inherent limitations. Electronic implants require invasive surgeries, operate in challenging microenvironments, and are susceptible to bacterial infection and persistent inflammation. Novel materials and nonconventional device fabrication strategies may revolutionize the way electronic devices are integrated with the body. Ingestible electronic devices offer many advantages compared with implantable counterparts that may improve the diagnosis and treatment of pathologies ranging from gastrointestinal infections to diabetes. This review summarizes current technologies and highlights recent materials advances. Specific focus is dedicated to next-generation materials for packaging, circuit design, and on-board power supplies that are benign, nontoxic, and even biodegradable. Future challenges and opportunities are also highlighted. PMID:26403162

  16. Testing of Alternative Materials for Advanced Suit Bladders

    NASA Technical Reports Server (NTRS)

    Bue, Grant; Orndoff, Evelyne; Makinen, Janice; Tang, Henry

    2011-01-01

    Several candidate advanced pressure bladder membrane materials have been developed for NASA Johnson Space Center by DSM Biomedical for selective permeability of carbon dioxide and water vapor. These materials were elasthane and two other formulations of thermoplastic polyether polyurethane. Each material was tested in two thicknesses for permeability to carbon dioxide, oxygen and water vapor. Although oxygen leaks through the suit bladder would amount to only about 60 cc/hr in a full size suit, significant amounts of carbon dioxide would not be rejected by the system to justify its use. While the ratio of carbon dioxide to oxygen permeability is about 48 to 1, this is offset by the small partial pressure of carbon dioxide in acceptable breathing atmospheres of the suit. Humidity management remains a possible use of the membranes depending on the degree to which the water permeability is inhibited by cations in the sweat. Tests are underway to explore cation fouling from sweat.

  17. Development of processing techniques for advanced thermal protection materials

    NASA Technical Reports Server (NTRS)

    Selvaduray, Guna S.

    1994-01-01

    The effort, which was focused on the research and development of advanced materials for use in Thermal Protection Systems (TPS), has involved chemical and physical testing of refractory ceramic tiles, fabrics, threads and fibers. This testing has included determination of the optical properties, thermal shock resistance, high temperature dimensional stability, and tolerance to environmental stresses. Materials have also been tested in the Arc Jet 2 x 9 Turbulent Duct Facility (TDF), the 1 atmosphere Radiant Heat Cycler, and the Mini-Wind Tunnel Facility (MWTF). A significant part of the effort hitherto has gone towards modifying and upgrading the test facilities so that meaningful tests can be carried out. Another important effort during this period has been the creation of a materials database. Computer systems administration and support have also been provided. These are described in greater detail below.

  18. Test model designs for advanced refractory ceramic materials

    NASA Technical Reports Server (NTRS)

    Tran, Huy Kim

    1993-01-01

    The next generation of space vehicles will be subjected to severe aerothermal loads and will require an improved thermal protection system (TPS) and other advanced vehicle components. In order to ensure the satisfactory performance system (TPS) and other advanced vehicle materials and components, testing is to be performed in environments similar to space flight. The design and fabrication of the test models should be fairly simple but still accomplish test objectives. In the Advanced Refractory Ceramic Materials test series, the models and model holders will need to withstand the required heat fluxes of 340 to 817 W/sq cm or surface temperatures in the range of 2700 K to 3000 K. The model holders should provide one dimensional (1-D) heat transfer to the samples and the appropriate flow field without compromising the primary test objectives. The optical properties such as the effective emissivity, catalytic efficiency coefficients, thermal properties, and mass loss measurements are also taken into consideration in the design process. Therefore, it is the intent of this paper to demonstrate the design schemes for different models and model holders that would accommodate these test requirements and ensure the safe operation in a typical arc jet facility.

  19. Characterization of semiconductor materials using synchrotron radiation-based near-field infrared microscopy and nano-FTIR spectroscopy.

    PubMed

    Hermann, Peter; Hoehl, Arne; Ulrich, Georg; Fleischmann, Claudia; Hermelink, Antje; Kästner, Bernd; Patoka, Piotr; Hornemann, Andrea; Beckhoff, Burkhard; Rühl, Eckart; Ulm, Gerhard

    2014-07-28

    We describe the application of scattering-type near-field optical microscopy to characterize various semiconducting materials using the electron storage ring Metrology Light Source (MLS) as a broadband synchrotron radiation source. For verifying high-resolution imaging and nano-FTIR spectroscopy we performed scans across nanoscale Si-based surface structures. The obtained results demonstrate that a spatial resolution below 40 nm can be achieved, despite the use of a radiation source with an extremely broad emission spectrum. This approach allows not only for the collection of optical information but also enables the acquisition of near-field spectral data in the mid-infrared range. The high sensitivity for spectroscopic material discrimination using synchrotron radiation is presented by recording near-field spectra from thin films composed of different materials used in semiconductor technology, such as SiO2, SiC, SixNy, and TiO2. PMID:25089414

  20. Review on advanced composite materials boring mechanism and tools

    NASA Astrophysics Data System (ADS)

    Shi, Runping; Wang, Chengyong

    2010-12-01

    With the rapid development of aviation and aerospace manufacturing technology, advanced composite materials represented by carbon fibre reinforced plastics (CFRP) and super hybrid composites (fibre/metal plates) are more and more widely applied. The fibres are mainly carbon fibre, boron fibre, Aramid fiber and Sic fibre. The matrixes are resin matrix, metal matrix and ceramic matrix. Advanced composite materials have higher specific strength and higher specific modulus than glass fibre reinforced resin composites of the 1st generation. They are widely used in aviation and aerospace industry due to their high specific strength, high specific modulus, excellent ductility, anticorrosion, heat-insulation, sound-insulation, shock absorption and high&low temperature resistance. They are used for radomes, inlets, airfoils(fuel tank included), flap, aileron, vertical tail, horizontal tail, air brake, skin, baseboards and tails, etc. Its hardness is up to 62~65HRC. The holes are greatly affected by the fibre laminates direction of carbon fibre reinforced composite material due to its anisotropy when drilling in unidirectional laminates. There are burrs, splits at the exit because of stress concentration. Besides there is delamination and the hole is prone to be smaller. Burrs are caused by poor sharpness of cutting edge, delamination, tearing, splitting are caused by the great stress caused by high thrust force. Poorer sharpness of cutting edge leads to lower cutting performance and higher drilling force at the same time. The present research focuses on the interrelation between rotation speed, feed, drill's geometry, drill life, cutting mode, tools material etc. and thrust force. At the same time, holes quantity and holes making difficulty of composites have also increased. It requires high performance drills which won't bring out defects and have long tool life. It has become a trend to develop super hard material tools and tools with special geometry for drilling

  1. Review on advanced composite materials boring mechanism and tools

    NASA Astrophysics Data System (ADS)

    Shi, Runping; Wang, Chengyong

    2011-05-01

    With the rapid development of aviation and aerospace manufacturing technology, advanced composite materials represented by carbon fibre reinforced plastics (CFRP) and super hybrid composites (fibre/metal plates) are more and more widely applied. The fibres are mainly carbon fibre, boron fibre, Aramid fiber and Sic fibre. The matrixes are resin matrix, metal matrix and ceramic matrix. Advanced composite materials have higher specific strength and higher specific modulus than glass fibre reinforced resin composites of the 1st generation. They are widely used in aviation and aerospace industry due to their high specific strength, high specific modulus, excellent ductility, anticorrosion, heat-insulation, sound-insulation, shock absorption and high&low temperature resistance. They are used for radomes, inlets, airfoils(fuel tank included), flap, aileron, vertical tail, horizontal tail, air brake, skin, baseboards and tails, etc. Its hardness is up to 62~65HRC. The holes are greatly affected by the fibre laminates direction of carbon fibre reinforced composite material due to its anisotropy when drilling in unidirectional laminates. There are burrs, splits at the exit because of stress concentration. Besides there is delamination and the hole is prone to be smaller. Burrs are caused by poor sharpness of cutting edge, delamination, tearing, splitting are caused by the great stress caused by high thrust force. Poorer sharpness of cutting edge leads to lower cutting performance and higher drilling force at the same time. The present research focuses on the interrelation between rotation speed, feed, drill's geometry, drill life, cutting mode, tools material etc. and thrust force. At the same time, holes quantity and holes making difficulty of composites have also increased. It requires high performance drills which won't bring out defects and have long tool life. It has become a trend to develop super hard material tools and tools with special geometry for drilling

  2. A manufacturing database of advanced materials used in spacecraft structures

    NASA Technical Reports Server (NTRS)

    Bao, Han P.

    1994-01-01

    Cost savings opportunities over the life cycle of a product are highest in the early exploratory phase when different design alternatives are evaluated not only for their performance characteristics but also their methods of fabrication which really control the ultimate manufacturing costs of the product. In the past, Design-To-Cost methodologies for spacecraft design concentrated on the sizing and weight issues more than anything else at the early so-called 'Vehicle Level' (Ref: DOD/NASA Advanced Composites Design Guide). Given the impact of manufacturing cost, the objective of this study is to identify the principal cost drivers for each materials technology and propose a quantitative approach to incorporating these cost drivers into the family of optimization tools used by the Vehicle Analysis Branch of NASA LaRC to assess various conceptual vehicle designs. The advanced materials being considered include aluminum-lithium alloys, thermoplastic graphite-polyether etherketone composites, graphite-bismaleimide composites, graphite- polyimide composites, and carbon-carbon composites. Two conventional materials are added to the study to serve as baseline materials against which the other materials are compared. These two conventional materials are aircraft aluminum alloys series 2000 and series 7000, and graphite-epoxy composites T-300/934. The following information is available in the database. For each material type, the mechanical, physical, thermal, and environmental properties are first listed. Next the principal manufacturing processes are described. Whenever possible, guidelines for optimum processing conditions for specific applications are provided. Finally, six categories of cost drivers are discussed. They include, design features affecting processing, tooling, materials, fabrication, joining/assembly, and quality assurance issues. It should be emphasized that this database is not an exhaustive database. Its primary use is to make the vehicle designer

  3. Controlled FRET efficiency in nano-bio hybrid materials made from semiconductor quantum dots and bacteriorhodopsin

    NASA Astrophysics Data System (ADS)

    Bouchonville, Nicolas; Le Cigne, Anthony; Sukhanova, Alyona; Saab, Marie-belle; Troyon, Michel; Molinari, Michael; Nabiev, Igor

    2012-10-01

    Förster resonance energy transfer (FRET) between CdSe/ZnS core/shell quantum dots (QDs) and the photochromic protein bacteriorhodopsin (bR) in its natural purple membrane (PM) has been modulated by independent tuning of the Förster radius, overlap integral of the donor emission spectrum and acceptor absorption spectrum, and the distance between the donor (QD) and acceptor (bR retinal). The results have shown that the observed energy transfer from QDs to bR corresponds to that predicted by a multiple-acceptors geometric model describing the FRET phenomenon for QDs quasi-epitaxied on a crystalline lattice of bR trimers. Linking of QDs and bR via streptavidin-biotin linkers of different lengths caused FRET with an efficiency reaching 82%, strongly exceeding the values predicted by the classical FRET theory. The data not only demonstrate the possibility of nano-bioengineering of efficient hybrid materials with controlled energy-transfer properties, but also emphasize the necessity to develop an advanced theory of nano-bio energy transfer that would explain experimental effects contradicting the existing theoretical models.

  4. Crashworthiness analysis using advanced material models in DYNA3D

    SciTech Connect

    Logan, R.W.; Burger, M.J.; McMichael, L.D.; Parkinson, R.D.

    1993-10-22

    As part of an electric vehicle consortium, LLNL and Kaiser Aluminum are conducting experimental and numerical studies on crashworthy aluminum spaceframe designs. They have jointly explored the effect of heat treat on crush behavior and duplicated the experimental behavior with finite-element simulations. The major technical contributions to the state of the art in numerical simulation arise from the development and use of advanced material model descriptions for LLNL`s DYNA3D code. Constitutive model enhancements in both flow and failure have been employed for conventional materials such as low-carbon steels, and also for lighter weight materials such as aluminum and fiber composites being considered for future vehicles. The constitutive model enhancements are developed as extensions from LLNL`s work in anisotropic flow and multiaxial failure modeling. Analysis quality as a function of level of simplification of material behavior and mesh is explored, as well as the penalty in computation cost that must be paid for using more complex models and meshes. The lightweight material modeling technology is being used at the vehicle component level to explore the safety implications of small neighborhood electric vehicles manufactured almost exclusively from these materials.

  5. Advanced Materials Development Program: Ceramic Technology for Advanced Heat Engines program plan, 1983--1993

    SciTech Connect

    Not Available

    1990-07-01

    The purpose of the Ceramic Technology for Advanced Heat Engines (CTAHE) Project is the development of an industrial technology base capable of providing reliable and cost-effective high temperature ceramic components for application in advanced heat engines. There is a deliberate emphasis on industrial'' in the purpose statement. The project is intended to support the US ceramic and engine industries by providing the needed ceramic materials technology. The heat engine programs have goals of component development and proof-of-concept. The CTAHE Project is aimed at developing generic basic ceramic technology and does not involve specific engine designs and components. The materials research and development efforts in the CTAHE Project are focused on the needs and general requirements of the advanced gas turbine and low heat rejection diesel engines. The CTAHE Project supports the DOE Office of Transportation Systems' heat engine programs, Advanced Turbine Technology Applications (ATTAP) and Heavy Duty Transport (HDT) by providing the basic technology required for development of reliable and cost-effective ceramic components. The heat engine programs provide the iterative component design, fabrication, and test development logic. 103 refs., 18 figs., 11 tabs.

  6. Supramolecular polymer adhesives: advanced materials inspired by nature.

    PubMed

    Heinzmann, Christian; Weder, Christoph; de Espinosa, Lucas Montero

    2016-01-21

    Due to their dynamic, stimuli-responsive nature, non-covalent interactions represent versatile design elements that can be found in nature in many molecular processes or materials, where adaptive behavior or reversible connectivity is required. Examples include molecular recognition processes, which trigger biological responses or cell-adhesion to surfaces, and a broad range of animal secreted adhesives with environment-dependent properties. Such advanced functionalities have inspired researchers to employ similar design approaches for the development of synthetic polymers with stimuli-responsive properties. The utilization of non-covalent interactions for the design of adhesives with advanced functionalities such as stimuli responsiveness, bonding and debonding on demand capability, surface selectivity or recyclability is a rapidly emerging subset of this field, which is summarized in this review. PMID:26203784

  7. (Advanced materials, robotics, and advanced computers for use in nuclear power plants)

    SciTech Connect

    White, J.D.

    1989-11-17

    The aim of the IAEA Technical Committee Workshop was to provide an opportunity to exchange information on the status of advances in technologies such as improved materials, robotics, and advanced computers already used or expected to be used in the design of nuclear power plants, and to review possible applications of advanced technologies in future reactor designs. Papers were given in these areas by Belgium, France, Mexico, Canada, Russia, India, and the United States. Notably absent from this meeting were Japan, Germany, Italy, Spain, the United Kingdom, and the Scandinavian countries -- all of whom are working in the areas of interest to this meeting. Most of the workshop discussion, however, was focused on advanced controls (including human-machine interface and software development and testing) and electronic descriptions of power plants. Verification and validation of design was also a topic of considerable discussion. The traveler was surprised at the progress made in 3-D electronic images of nuclear power plants and automatic updating of these images to reflect as-built conditions. Canadian plants and one Mexican plant have used photogrammetry to update electronic drawings automatically. The Canadians also have started attaching other electronic data bases to the electronic drawings. These data bases include parts information and maintenance work. The traveler observed that the Advanced Controls Program is better balanced and more forward looking than other nuclear controls R D activities described. The French participants made this observation in the meeting and expressed interest in collaborative work in this area.

  8. Four advances in carbon-carbon materials technology

    NASA Technical Reports Server (NTRS)

    Maahs, Howard G.; Vaughn, Wallace L.; Kowbel, Witold

    1994-01-01

    Carbon-carbon composites are a specialty class of materials having many unique properties making these composites attractive for a variety of demanding engineering applications. Chief among these properties are exceptional retention of mechanical properties at temperatures as high as 4000 F, excellent creep resistance, and low density (1.6 to 1.8 g/cu cm). Although carbon-carbon composites are currently in service in a variety of applications, much development work remains to be accomplished before these materials can be considered to be fully mature, realizing their full potential. Four recent technology advances holding particular promise for overcoming current barriers to the wide-spread commercialization of carbon-carbon composites are described. These advances are: markedly improved interlaminar strengths (more than doubled) of two dimensional composites achieved by whiskerization of the fabric reinforcing plies, simultaneously improved oxidation resistance and mechanical properties achieved by the incorporation of matrix-phase oxidation inhibitors based on carborane chemistry, improved oxidation resistance achieved by compositionally graded oxidation protective coatings, and markedly reduced processing times (hours as opposed to weeks or months) accomplished through a novel process of carbon infiltration and coatings deposition based on the use of liquid-phase precursor materials.

  9. Semiconductor bridge (SCB) detonator

    DOEpatents

    Bickes, Jr., Robert W.; Grubelich, Mark C.

    1999-01-01

    The present invention is a low-energy detonator for high-density secondary-explosive materials initiated by a semiconductor bridge igniter that comprises a pair of electrically conductive lands connected by a semiconductor bridge. The semiconductor bridge is in operational or direct contact with the explosive material, whereby current flowing through the semiconductor bridge causes initiation of the explosive material. Header wires connected to the electrically-conductive lands and electrical feed-throughs of the header posts of explosive devices, are substantially coaxial to the direction of current flow through the SCB, i.e., substantially coaxial to the SCB length.

  10. Semiconductor bridge (SCB) detonator

    DOEpatents

    Bickes, R.W. Jr.; Grubelich, M.C.

    1999-01-19

    The present invention is a low-energy detonator for high-density secondary-explosive materials initiated by a semiconductor bridge (SCB) igniter that comprises a pair of electrically conductive lands connected by a semiconductor bridge. The semiconductor bridge is in operational or direct contact with the explosive material, whereby current flowing through the semiconductor bridge causes initiation of the explosive material. Header wires connected to the electrically-conductive lands and electrical feed-throughs of the header posts of explosive devices, are substantially coaxial to the direction of current flow through the SCB, i.e., substantially coaxial to the SCB length. 3 figs.

  11. Materials and Component Development for Advanced Turbine Systems

    SciTech Connect

    Alvin, M A; Pettit, F; Meier, G H; Yanar, M; Helminiak, M; Chyu, M; Siw, S; Slaughter, W S; Karaivanov, V; Kang, B S; Feng, C; Tannebaum, J M; Chen, R; Zhang, B; Fu, T; Richards, G A; Sidwell, T G; Straub, D; Casleton, K H; Dogan, O M

    2008-07-01

    Hydrogen-fired and oxy-fueled land-based gas turbines currently target inlet operating temperatures of ~1425-1760°C (~2600-3200°F). In view of natural gas or syngas-fired engines, advancements in both materials, as well as aerothermal cooling configurations are anticipated prior to commercial operation. This paper reviews recent technical accomplishments resulting from NETL’s collaborative research efforts with the University of Pittsburgh and West Virginia University for future land-based gas turbine applications.

  12. Microstructural and mechanical characterization of laser deposited advanced materials

    NASA Astrophysics Data System (ADS)

    Sistla, Harihar Rakshit

    Additive manufacturing in the form of laser deposition is a unique way to manufacture near net shape metallic components from advanced materials. Rapid solidification facilitates the extension of solid solubility, compositional flexibility and decrease in micro-segregation in the melt among other advantages. The current work investigates the employment of laser deposition to fabricate the following: 1. Functionally gradient materials: This allows grading dissimilar materials compositionally to tailor specific properties of both these materials into a single component. Specific compositions of the candidate materials (SS 316, Inconel 625 and Ti64) were blended and deposited to study the brittle intermetallics reported in these systems. 2. High entropy alloys: These are multi- component alloys with equiatomic compositions of 5 or more elements. The ratio of Al to Ni was decreased to observe the transition of solid solution from a BCC to an FCC crystal structure in the AlFeCoCrNi system. 3. Structurally amorphous alloys: Zr-based metallic glasses have been reported to have high glass forming ability. These alloys have been laser deposited so as to rapidly cool them from the melt into an amorphous state. Microstructural analysis and X-ray diffraction were used to study the phase formation, and hardness was measured to estimate the mechanical properties.

  13. Advanced Test Reactor National Scientific User Facility: Addressing advanced nuclear materials research

    SciTech Connect

    John Jackson; Todd Allen; Frances Marshall; Jim Cole

    2013-03-01

    The Advanced Test Reactor National Scientific User Facility (ATR NSUF), based at the Idaho National Laboratory in the United States, is supporting Department of Energy and industry research efforts to ensure the properties of materials in light water reactors are well understood. The ATR NSUF is providing this support through three main efforts: establishing unique infrastructure necessary to conduct research on highly radioactive materials, conducting research in conjunction with industry partners on life extension relevant topics, and providing training courses to encourage more U.S. researchers to understand and address LWR materials issues. In 2010 and 2011, several advanced instruments with capability focused on resolving nuclear material performance issues through analysis on the micro (10-6 m) to atomic (10-10 m) scales were installed primarily at the Center for Advanced Energy Studies (CAES) in Idaho Falls, Idaho. These instruments included a local electrode atom probe (LEAP), a field-emission gun scanning transmission electron microscope (FEG-STEM), a focused ion beam (FIB) system, a Raman spectrometer, and an nanoindentor/atomic force microscope. Ongoing capability enhancements intended to support industry efforts include completion of two shielded, irradiation assisted stress corrosion cracking (IASCC) test loops, the first of which will come online in early calendar year 2013, a pressurized and controlled chemistry water loop for the ATR center flux trap, and a dedicated facility intended to house post irradiation examination equipment. In addition to capability enhancements at the main site in Idaho, the ATR NSUF also welcomed two new partner facilities in 2011 and two new partner facilities in 2012; the Oak Ridge National Laboratory, High Flux Isotope Reactor (HFIR) and associated hot cells and the University California Berkeley capabilities in irradiated materials analysis were added in 2011. In 2012, Purdue University’s Interaction of Materials

  14. Cost/benefit studies of advanced materials technologies for future aircraft turbine engines: Materials for advanced turbine engines

    NASA Technical Reports Server (NTRS)

    Stearns, M.; Wilbers, L.

    1982-01-01

    Cost benefit studies were conducted on six advanced materials and processes technologies applicable to commercial engines planned for production in the 1985 to 1990 time frame. These technologies consisted of thermal barrier coatings for combustor and high pressure turbine airfoils, directionally solidified eutectic high pressure turbine blades, (both cast and fabricated), and mixers, tail cones, and piping made of titanium-aluminum alloys. A fabricated titanium fan blisk, an advanced turbine disk alloy with improved low cycle fatigue life, and a long-life high pressure turbine blade abrasive tip and ceramic shroud system were also analyzed. Technologies showing considerable promise as to benefits, low development costs, and high probability of success were thermal barrier coating, directionally solidified eutectic turbine blades, and abrasive-tip blades/ceramic-shroud turbine systems.

  15. Advanced Hot Section Materials and Coatings Test Rig

    SciTech Connect

    Dan Davis

    2006-09-30

    Phase I of the Hyperbaric Advanced Hot Section Materials & Coating Test Rig Program has been successfully completed. Florida Turbine Technologies has designed and planned the implementation of a laboratory rig capable of simulating the hot gas path conditions of coal gas fired industrial gas turbine engines. Potential uses of this rig include investigations into environmental attack of turbine materials and coatings exposed to syngas, erosion, and thermal-mechanical fatigue. The principle activities during Phase 1 of this project included providing several conceptual designs for the test section, evaluating various syngas-fueled rig combustor concepts, comparing the various test section concepts and then selecting a configuration for detail design. Conceptual definition and requirements of auxiliary systems and facilities were also prepared. Implementation planning also progressed, with schedules prepared and future project milestones defined. The results of these tasks continue to show rig feasibility, both technically and economically.

  16. Radio frequency coupling apparatus and method for measuring minority carrier lifetimes in semiconductor materials

    DOEpatents

    Johnston, Steven W.; Ahrenkiel, Richard K.

    2002-01-01

    An apparatus for measuring the minority carrier lifetime of a semiconductor sample using radio-frequency coupling. The measuring apparatus includes an antenna that is positioned a coupling distance from a semiconductor sample which is exposed to light pulses from a laser during sampling operations. A signal generator is included to generate high frequency, such as 900 MHz or higher, sinusoidal waveform signals that are split into a reference signal and a sample signal. The sample signal is transmitted into a sample branch circuit where it passes through a tuning capacitor and a coaxial cable prior to reaching the antenna. The antenna is radio-frequency coupled with the adjacent sample and transmits the sample signal, or electromagnetic radiation corresponding to the sample signal, to the sample and receives reflected power or a sample-coupled-photoconductivity signal back. To lower impedance and speed system response, the impedance is controlled by limiting impedance in the coaxial cable and the antenna reactance. In one embodiment, the antenna is a waveguide/aperture hybrid antenna having a central transmission line and an adjacent ground flange. The sample-coupled-photoconductivity signal is then transmitted to a mixer which also receives the reference signal. To enhance the sensitivity of the measuring apparatus, the mixer is operated to phase match the reference signal and the sample-coupled-photoconductivity signal.

  17. Doped semiconductor nanoparticles synthesized in gas-phase plasmas

    NASA Astrophysics Data System (ADS)

    Pereira, R. N.; Almeida, A. J.

    2015-08-01

    Crystalline nanoparticles (NPs) of semiconductor materials have been attracting huge research interest due to their potential use in future applications like photovoltaics and bioimaging. The important role that intentional impurity doping plays in semiconductor technology has ignited a great deal of research effort aiming at synthesizing semiconductor NPs doped with foreign impurities and at understanding their physical and chemical properties. In this respect, plasma-grown semiconductor NPs doped in situ during synthesis have been key in studies of doped NPs. This article presents a review of the advances in understanding the properties of doped semiconductor NPs synthesized by means of plasma methods and the role played by these NPs for our current understanding of doped NPs and the general behavior of doping in nanoscale materials.

  18. Cladding and Structural Materials for Advanced Nuclear Energy Systems

    SciTech Connect

    Was, G S; Allen, T R; Ila, D; C,; Levi,; Morgan, D; Motta, A; Wang, L; Wirth, B

    2011-06-30

    The goal of this consortium is to address key materials issues in the most promising advanced reactor concepts that have yet to be resolved or that are beyond the existing experience base of dose or burnup. The research program consists of three major thrusts: 1) high-dose radiation stability of advanced fast reactor fuel cladding alloys, 2) irradiation creep at high temperature, and 3) innovative cladding concepts embodying functionally-graded barrier materials. This NERI-Consortium final report represents the collective efforts of a large number of individuals over a period of three and a half years and included 9 PIs, 4 scientists, 3 post-docs and 12 students from the seven participating institutions and 8 partners from 5 national laboratories and 3 industrial institutions (see table). University participants met semi-annually and participants and partners met annually for meetings lasting 2-3 days and designed to disseminate and discuss results, update partners, address outstanding issues and maintain focus and direction toward achieving the objectives of the program. The participants felt that this was a highly successful program to address broader issues that can only be done by the assembly of a range of talent and capabilities at a more substantial funding level than the traditional NERI or NEUP grant. As evidence of the success, this group, collectively, has published 20 articles in archival journals and made 57 presentations at international conferences on the results of this consortium.

  19. NASA's Advanced Space Transportation Program: A Materials Overview

    NASA Technical Reports Server (NTRS)

    Clinton, R. G., Jr.

    1999-01-01

    The realization of low-cost assess to space is one of NASA's three principal goals or "pillars" under the Office of Aero-Space Technology. In accordance with the goals of this pillar, NASA's primary space transportation technology role is to develop and demonstrate next-generation technologies to enable the commercial launch industry to develop full-scale, low cost, highly reliable space launchers. The approach involves both ground-based technology demonstrations and flight demonstrators, including the X-33, X-34, Bantam, Reusable Launch Vehicle (RLV), and future experimental vehicles. Next generation space transportation vehicles and propulsion systems will require the development and implementation of advanced materials and processes. This presentation will provide an overview of advanced materials efforts which are focused on the needs of next generation space transportation systems. Applications described will include ceramic matrix composite (CMC) integrally bladed turbine disk (blisk); actively cooled CMC nozzle ramp for the aerospike engine; ablative thrust chamber/nozzle; and metal matrix composite turbomachinery housings.

  20. On fracture phenomena in advanced fiber composite materials.

    NASA Technical Reports Server (NTRS)

    Konish, H. J., Jr.; Swedlow, J. L.; Cruse, T. A.

    1972-01-01

    The extension of linear elastic fracture mechanics (LEFM) from metallic alloys to advanced fiber composite laminates is considered. LEFM is shown to be valid for both isotropic and anisotropic homogeneous continua; the applicability of LEFM to advanced fiber composites is thus dependent on the validity of a homogeneous model of such materials. An experimental program to determine the validity of such a model for graphite/epoxy laminates is reviewed. Such laminates are found to have an apparent fracture toughness, from which it is inferred that a homogeneous material model is valid for the particular specimen geometry and composite laminates considered. Strain energy release rates are calculated from the experimentally determined fracture toughness of the various laminates. These strain energy release rates are found to lie in one of two groups, depending upon whether crack extension required fiber failure or matrix failure. The latter case is further investigated. It is concluded that matrix failure is governed by the tensile stress normal to the crack path.

  1. Advanced Industrial Materials (AIM) Program annual progress report, FY 1997

    SciTech Connect

    1998-05-01

    The Advanced Industrial Materials (AIM) Program is a part of the Office of Industrial Technologies (OIT), Energy Efficiency and Renewable Energy, US Department of Energy (DOE). The mission of AIM is to support development and commercialization of new or improved materials to improve energy efficiency, productivity, product quality, and reduced waste in the major process industries. OIT has embarked on a fundamentally new way of working with industries--the Industries of the Future (IOF) strategy--concentrating on the major process industries that consume about 90% of the energy and generate about 90% of the waste in the industrial sector. These are the aluminum, chemical, forest products, glass, metalcasting, and steel industries. OIT has encouraged and assisted these industries in developing visions of what they will be like 20 or 30 years into the future, defining the drivers, technology needs, and barriers to realization of their visions. These visions provide a framework for development of technology roadmaps and implementation plans, some of which have been completed. The AIM Program supports IOF by conducting research and development on materials to solve problems identified in the roadmaps. This is done by National Laboratory/industry/university teams with the facilities and expertise needed to develop new and improved materials. Each project in the AIM Program has active industrial participation and support.

  2. Combustion Synthesis of Advanced Porous Materials in Microgravity Environment

    NASA Technical Reports Server (NTRS)

    Zhang, X.; Moore, J. J.; Schowengerdt, F. D.; Johnson, D. P.

    1999-01-01

    Combustion synthesis, otherwise known as self-propagating high temperature synthesis (SHS), can be used to produce engineered advanced porous material implants which offer the possibility for bone ingrowth as well as a permanent structure framework for the long-term replacement of bone defects. The primary advantage of SHS is based on its rapid kinetics and favorable energetics. The structure and properties of materials produced by SHS are strongly dependent on the combustion reaction conditions. Combustion reaction conditions such as reaction stoichiometry, particle size, green density, the presence and use of diluents or inert reactants, and pre-heating of the reactants, will affect the exothermicity of the reaction. A number of conditions must be satisfied in order to obtain high porosity materials: an optimal amount of liquid, gas and solid phases must be present in the combustion front. Therefore, a balance among these phases at the combustion front must be created by the SHS reaction to successfully engineer a bone replacement material system. Microgravity testing has extended the ability to form porous products. The convective heat transfer mechanisms which operate in normal gravity, 1 g, constrain the combustion synthesis reactions. Gravity also acts to limit the porosity which may be formed as the force of gravity serves to restrict the gas expansion and the liquid movement during reaction. Infiltration of the porous product with other phases can modify both the extent of porosity and the mechanical properties.

  3. Validation of an Advanced Material Model for Simulating the Impact and Shock Response of Composite Materials

    NASA Astrophysics Data System (ADS)

    Clegg, Richard A.; Hayhurst, Colin J.; Nahme, Hartwig

    2002-07-01

    Composite materials are now commonly used as ballistic and hypervelocity protection materials and the demand for simulation of impact on these materials is increasing. A new material model specifically designed for the shock response of anisotropic materials has been developed and implemented in the hydrocode AUTODYN. The model allows for the representation of non-linear shock effects in combination with anisotropic material stiffness and damage. The coupling of the equation of state and anisotropic response is based on the methodology proposed by Anderson et al. [2]. An overview of the coupled formulation is described in order to point out the important assumptions, key innovations and basic theoretical framework. The coupled model was originally developed by Century Dynamics and Fhg-EMI for assessing the hypervelocity impact response of composite satellite protection systems [1]. It was also identified that the developed model should also offer new possibilities and capabilities for modelling modern advanced armour materials. Validation of the advanced composite model is firstly shown via simulations of uniaxial strain flyer plate experiments on aramid and polyethylene fibre composite systems. Finally, practical application of the model as implemented in AUTODYN is demonstrated through the simulation of ballistic and hypervelocity impact events. Comparison with experiment is given where possible.

  4. 2012 DEFECTS IN SEMICONDUCTORS GORDON RESEARCH CONFERENCE, AUGUST 12-17, 2012

    SciTech Connect

    GLASER, EVAN

    2012-08-17

    The meeting shall strive to develop and further the fundamental understanding of defects and their roles in the structural, electronic, optical, and magnetic properties of bulk, thin film, and nanoscale semiconductors and device structures. Point and extended defects will be addressed in a broad range of electronic materials of particular current interest, including wide bandgap semiconductors, metal-oxides, carbon-based semiconductors (e.g., diamond, graphene, etc.), organic semiconductors, photovoltaic/solar cell materials, and others of similar interest. This interest includes novel defect detection/imaging techniques and advanced defect computational methods.

  5. PREFACE Conference on Advanced Materials and Nanotechnology (CAMAN 2009)

    NASA Astrophysics Data System (ADS)

    Ali, Aidy

    2011-02-01

    This special issue of IOP Conference Series: Materials science and Engineering contains papers contributed to the Conference on Advanced Materials and Nanotechnology (CAMAN 2009) held on 3-5 November 2009 in Putra World Trade Centre (PWTC), Kuala Lumpur, Malaysia. The objective of the congress is to provide a platform for professionals, academicians and researchers to exchange views, findings, ideas and experiences on advanced science and technology. After careful refereeing of all manuscripts, 50 papers were selected for publications in this issue. The policy of editing was the content of the material and its rapid dissemination was more important than its form. In 2009, the conference received close to 120 papers from leading researchers and participants from countries such as Iran, India, Switzerland, Myanmar, Nigeria, Canada, Yemen and Malaysia. We strongly hope the new ideas and results presented will stimulate and enhance the progress of research on the above conference theme. We are grateful to all the authors for their papers and presentations in this conference. They are also the ones who help make this conference possible through their hard work in the preparation of the manuscripts. We would also like to offer our sincere thanks to all the invited speakers who came to share their knowledge with us. We would also like to acknowledge the untiring efforts of the reviewers, research assistants and students in meeting deadlines and for their patience and perseverance. We wish to thank all the authors who contributed papers to the conference and all reviewers for their efforts to review the papers as well as the sponsors. We would also like to thank the members of the CAMAN 2009 Organising Committee and the International Advisory Committee for their efforts in making the conference a success. Thank you very much indeed. Guest Editor Aidy Ali

  6. Fabrication and application of advanced functional materials from lignincellulosic biomass

    NASA Astrophysics Data System (ADS)

    Hu, Sixiao

    This dissertation explored the conversion of lignocellulosic biomass into advanced functional materials and their potential applications. Lignocellulosic biomass represents an as-of-yet underutilized renewable source for not only biofuel production but also functional materials fabrication. This renewable source is a great alternative for fossil fuel based chemicals, which could be one of the solutions to energy crisis. In this work, it was demonstrated a variety of advanced materials including functional carbons, metal and silica nanoparticles could be derived from lignocellulosic biomass. Chapter 1 provided overall reviewed of the lignin structures, productions and its utilizations as plastics, absorbents and carbons, as well as the preparation of nano-structured silver, silica and silicon carbide/nitride from biomass. Chapter 2, 3 and 4 discussed the fabrication of highly porous carbons from isolated lignin, and their applications as electric supercapacitors for energy storage. In chapter 2, ultrafine porous carbon fibers were prepared via electrospinning followed by simultaneous carbonization and activation. Chapter 3 covered the fabrication of supercapacitor based on the porous carbon fibers and the investigation of their electrochemical performances. In chapter 4, porous carbon particulates with layered carbon nano plates structures were produced by simple oven-drying followed by simultaneous carbonization and activation. The effects of heat processing parameters on the resulting carbon structures and their electrochemical properties were discussed in details. Chapter 5 and 6 addressed the preparation of silver nanoparticles using lignin. Chapter 5 reported the synthesis, underlying kinetics and mechanism of monodispersed silver nanospheres with diameter less than 25 nm in aqueous solutions using lignin as dual reducing and capping agents. Chapter 6 covered the preparation of silver nanoparticles on electrospun celluloses ultrafine fibers using lignin as both

  7. Use of a laser for the spectral analysis of semiconductor materials

    NASA Technical Reports Server (NTRS)

    Karyakin, A. V.; Akhmanova, M. V.; Kaygorodov, V. A.

    1978-01-01

    Conventional applications of lasers for emission spectroscopy involving direct recording of light pulses of an evaporated substance emitted from the sample under the action of the laser light (direct method) were examined. Use of the laser light for conversion of the substance to a vapor and feeding the vapors into the conventional source of emission such as arc, sparks, etc. (the so called 2 stage excitation) were studied for use in the spectral analysis, of semiconductors. The direct method has a high reproducibility (5-7%); the 2 stage excitation method, characterized by the same intensity as obtained with the conventional constant, current arc, has better reproducibility than the direct method (15-20%). Both methods can be used for the analysis of samples without prior preparation. Advantages of these methods are the elimination of impurities picked up during trituration of the samples into powders and shortening of the analytical procedures.

  8. The application of semiconductor based UV sources for the detection and classification of biological material

    NASA Astrophysics Data System (ADS)

    Kaliszewski, Miron; Włodarski, Maksymilian; Bombalska, Aneta; Kwaśny, Mirosław; Mularczyk-Oliwa, Monika; Młyńczak, Jarosław; Kopczyński, Krzysztof

    2013-01-01

    Fluorescence analysis of dry samples of biological origin like pollens, fungi, flours and proteins was presented. In the laboratory study presentenced here two fluorescence methods using semiconductor light sources were applied. Firstly, laser induced fluorescence emission (LIF) spectra of the samples were recorded under 266 and 375 nm excitation. The second technique covered fluorescence decay (FD) at 280 and 340 nm excitation. Hierarchical Cluster Analysis (HCA) of acquired spectra and decays was performed. Both LIF and FD showed that single wavelength excitation 266 and 280 nm, respectively allow distinguishing of pollens from other samples. Combining data of both excitation wavelengths, for LIF and FD, respectively, resulted in substantial improvement of data classification for groups according to the samples origin.

  9. The Power of Materials Science Tools for Gaining Insights into Organic Semiconductors

    NASA Astrophysics Data System (ADS)

    Treat, Neil D.; Westacott, Paul; Stingelin, Natalie

    2015-07-01

    The structure of organic semiconductors can be complex because features from the molecular level (such as molecular conformation) to the micrometer scale (such as the volume fraction and composition of phases, phase distribution, and domain size) contribute to the definition of the optoelectronic landscape of the final architectures and, hence, to device performance. As a consequence, a detailed understanding of how to manipulate molecular ordering, e.g., through knowledge of relevant phase transitions, of the solidification process, of relevant solidification mechanisms, and of kinetic factors, is required to induce the desired optoelectronic response. In this review, we discuss relevant structural features of single-component and multicomponent systems; provide a case study of the multifaceted structure that polymer:fullerene systems can adopt; and highlight relevant solidification mechanisms such as nucleation and growth, liquid-liquid phase separation, and spinodal decomposition. In addition, cocrystal formation, solid solutions, and eutectic systems are treated and their relevance within the optoelectronic area emphasized.

  10. Quality Assurance Protocol for AFCI Advanced Structural Materials Testing

    SciTech Connect

    Busby, Jeremy T

    2009-05-01

    The objective of this letter is to inform you of recent progress on the development of advanced structural materials in support of advanced fast reactors and AFCI. As you know, the alloy development effort has been initiated in recent months with the procurement of adequate quantities of the NF616 and HT-UPS alloys. As the test alloys become available in the coming days, mechanical testing, evaluation of optimizing treatments, and screening of environmental effects will be possible at a larger scale. It is therefore important to establish proper quality assurance protocols for this testing effort in a timely manner to ensure high technical quality throughout testing. A properly implemented quality assurance effort will also enable preliminary data taken in this effort to be qualified as NQA-1 during any subsequent licensing discussions for an advanced design or actual prototype. The objective of this report is to describe the quality assurance protocols that will be used for this effort. An essential first step in evaluating quality protocols is assessing the end use of the data. Currently, the advanced structural materials effort is part of a long-range, basic research and development effort and not, as yet, involved in licensing discussions for a specific reactor design. After consultation with Mark Vance (an ORNL QA expert) and based on the recently-issued AFCI QA requirements, the application of NQA-1 quality requirements will follow the guidance provided in Part IV, Subpart 4.2 of the NQA-1 standard (Guidance on Graded Application of QA for Nuclear-Related Research and Development). This guidance mandates the application of sound scientific methodology and a robust peer review process in all phases, allowing for the data to be qualified for use even if the programmatic mission changes to include licensing discussions of a specific design or prototype. ORNL has previously implemented a QA program dedicated to GNEP activities and based on an appropriately graded

  11. Photochemical Strategies for the Synthesis of Advanced Materials

    NASA Astrophysics Data System (ADS)

    Billone, Paul S.

    fluorescent images can be patterned easily and preliminary results show that photolithography based on nanoparticle formation may be possible. This latter approach could provide a facile route to nanoparticle-embedded functional materials. This work with nanoparticles was inspired partly by earlier work, also presented herein, on semiconductor nanoparticles and their interactions with disulfide ligands.

  12. Semiconductor devices incorporating multilayer interference regions

    DOEpatents

    Biefeld, R.M.; Drummond, T.J.; Gourley, P.L.; Zipperian, T.E.

    1987-08-31

    A semiconductor high reflector comprising a number of thin alternating layers of semiconductor materials is electrically tunable and may be used as a temperature insensitive semiconductor laser in a Fabry-Perot configuration. 8 figs.

  13. Semiconductor devices incorporating multilayer interference regions

    DOEpatents

    Biefeld, Robert M.; Drummond, Timothy J.; Gourley, Paul L.; Zipperian, Thomas E.

    1990-01-01

    A semiconductor high reflector comprising a number of thin alternating layers of semiconductor materials is electrically tunable and may be used as a temperature insensitive semiconductor laser in a Fabry-Perot configuration.

  14. Advances in design and modeling of porous materials

    NASA Astrophysics Data System (ADS)

    Ayral, André; Calas-Etienne, Sylvie; Coasne, Benoit; Deratani, André; Evstratov, Alexis; Galarneau, Anne; Grande, Daniel; Hureau, Matthieu; Jobic, Hervé; Morlay, Catherine; Parmentier, Julien; Prelot, Bénédicte; Rossignol, Sylvie; Simon-Masseron, Angélique; Thibault-Starzyk, Frédéric

    2015-07-01

    This special issue of the European Physical Journal Special Topics is dedicated to selected papers from the symposium "High surface area porous and granular materials" organized in the frame of the conference "Matériaux 2014", held on November 24-28, 2014 in Montpellier, France. Porous materials and granular materials gather a wide variety of heterogeneous, isotropic or anisotropic media made of inorganic, organic or hybrid solid skeletons, with open or closed porosity, and pore sizes ranging from the centimeter scale to the sub-nanometer scale. Their technological and industrial applications cover numerous areas from building and civil engineering to microelectronics, including also metallurgy, chemistry, health, waste water and gas effluent treatment. Many emerging processes related to environmental protection and sustainable development also rely on this class of materials. Their functional properties are related to specific transfer mechanisms (matter, heat, radiation, electrical charge), to pore surface chemistry (exchange, adsorption, heterogeneous catalysis) and to retention inside confined volumes (storage, separation, exchange, controlled release). The development of innovative synthesis, shaping, characterization and modeling approaches enables the design of advanced materials with enhanced functional performance. The papers collected in this special issue offer a good overview of the state-of-the-art and science of these complex media. We would like to thank all the speakers and participants for their contribution to the success of the symposium. We also express our gratitude to the organization committee of "Matériaux 2014". We finally thank the reviewers and the staff of the European Physical Journal Special Topics who made the publication of this special issue possible.

  15. Advanced proton-exchange materials for energy efficient fuel cells.

    SciTech Connect

    Fujimoto, Cy H.; Grest, Gary Stephen; Hickner, Michael A.; Cornelius, Christopher James; Staiger, Chad Lynn; Hibbs, Michael R.

    2005-12-01

    The ''Advanced Proton-Exchange Materials for Energy Efficient Fuel Cells'' Laboratory Directed Research and Development (LDRD) project began in October 2002 and ended in September 2005. This LDRD was funded by the Energy Efficiency and Renewable Energy strategic business unit. The purpose of this LDRD was to initiate the fundamental research necessary for the development of a novel proton-exchange membranes (PEM) to overcome the material and performance limitations of the ''state of the art'' Nafion that is used in both hydrogen and methanol fuel cells. An atomistic modeling effort was added to this LDRD in order to establish a frame work between predicted morphology and observed PEM morphology in order to relate it to fuel cell performance. Significant progress was made in the area of PEM material design, development, and demonstration during this LDRD. A fundamental understanding involving the role of the structure of the PEM material as a function of sulfonic acid content, polymer topology, chemical composition, molecular weight, and electrode electrolyte ink development was demonstrated during this LDRD. PEM materials based upon random and block polyimides, polybenzimidazoles, and polyphenylenes were created and evaluated for improvements in proton conductivity, reduced swelling, reduced O{sub 2} and H{sub 2} permeability, and increased thermal stability. Results from this work reveal that the family of polyphenylenes potentially solves several technical challenges associated with obtaining a high temperature PEM membrane. Fuel cell relevant properties such as high proton conductivity (>120 mS/cm), good thermal stability, and mechanical robustness were demonstrated during this LDRD. This report summarizes the technical accomplishments and results of this LDRD.

  16. Semiconductor nanowire lasers

    NASA Astrophysics Data System (ADS)

    Eaton, Samuel W.; Fu, Anthony; Wong, Andrew B.; Ning, Cun-Zheng; Yang, Peidong

    2016-06-01

    The discovery and continued development of the laser has revolutionized both science and industry. The advent of miniaturized, semiconductor lasers has made this technology an integral part of everyday life. Exciting research continues with a new focus on nanowire lasers because of their great potential in the field of optoelectronics. In this Review, we explore the latest advancements in the development of nanowire lasers and offer our perspective on future improvements and trends. We discuss fundamental material considerations and the latest, most effective materials for nanowire lasers. A discussion of novel cavity designs and amplification methods is followed by some of the latest work on surface plasmon polariton nanowire lasers. Finally, exciting new reports of electrically pumped nanowire lasers with the potential for integrated optoelectronic applications are described.

  17. Damping capacity measurements for characterization of degradation in advanced materials

    SciTech Connect

    Mantena, R.; Gibson, R.F.; Place, T.A.

    1986-01-01

    This paper describes the application of damping capacity measurements for characterization of degradation in advanced materials. A recently developed impulse-frequency response technique was used to obtain damping capacity measurements on crossplied E-glass/epoxy laminates which had been subjected to four-point bending and cantilever bending to produce matrix cracking in the transverse plies. The size and location of the damage zone were correlated with changes in damping. With the expected introduction of Rapidly Solidified Alloys (RSA) as effective alternatives to conventional materials, the applicability of damping capacity measurements as a nondestructive means of evaluating degradation in these materials was also studied. A conventional A710 structural steel having three different microstructures was used for developing the methodology to be used later on RSA specimens. It is shown that damping is more sensitive to matrix cracking than stiffness is in E-glass/epoxy composite specimens. In the case of A710 steel, the damping changes at low strain, though significant, do not correlate with the mechanical property data. Damping data at high strains does correlate with the mechanical property data, however.

  18. Numerical Forming Simulations and Optimisation in Advanced Materials

    NASA Astrophysics Data System (ADS)

    Huétink, J.; van den Boogaard, A. H.; Geijselears, H. J. M.; Meinders, T.

    2007-05-01

    With the introduction of new materials as high strength steels, metastable steels and fibre reinforced composites, the need for advanced physically valid constitutive models arises. In finite deformation problems constitutive relations are commonly formulated in terms the Cauchy stress as a function of the elastic Finger tensor and an objective rate of the Cauchy stress as a function of the rate of deformation tensor. For isotropic materials models this is rather straightforward, but for anisotropic material models, including elastic anisotropy as well as plastic anisotropy, this may lead to confusing formulations. It will be shown that it is more convenient to define the constitutive relations in terms of invariant tensors referred to the deformed metric. Experimental results are presented that show new combinations of strain rate and strain path sensitivity. An adaptive through- thickness integration scheme for plate elements is developed, which improves the accuracy of spring back prediction at minimal costs. A procedure is described to automatically compensate the CAD tool shape numerically to obtain the desired product shape. Forming processes need to be optimized for cost saving and product improvement. Until recently, a trial-and-error process in the factory primarily did this optimization. An optimisation strategy is proposed that assists an engineer to model an optimization problem that suits his needs, including an efficient algorithm for solving the problem.

  19. Nanocrystalline materials: recent advances in crystallographic characterization techniques

    PubMed Central

    Ringe, Emilie

    2014-01-01

    Most properties of nanocrystalline materials are shape-dependent, providing their exquisite tunability in optical, mechanical, electronic and catalytic properties. An example of the former is localized surface plasmon resonance (LSPR), the coherent oscillation of conduction electrons in metals that can be excited by the electric field of light; this resonance frequency is highly dependent on both the size and shape of a nanocrystal. An example of the latter is the marked difference in catalytic activity observed for different Pd nanoparticles. Such examples highlight the importance of particle shape in nanocrystalline materials and their practical applications. However, one may ask ‘how are nanoshapes created?’, ‘how does the shape relate to the atomic packing and crystallography of the material?’, ‘how can we control and characterize the external shape and crystal structure of such small nanocrystals?’. This feature article aims to give the reader an overview of important techniques, concepts and recent advances related to these questions. Nucleation, growth and how seed crystallography influences the final synthesis product are discussed, followed by shape prediction models based on seed crystallography and thermodynamic or kinetic parameters. The crystallographic implications of epitaxy and orientation in multilayered, core-shell nanoparticles are overviewed, and, finally, the development and implications of novel, spatially resolved analysis tools are discussed. PMID:25485133

  20. Temperature controlled material irradiation in the advanced test reactor

    NASA Astrophysics Data System (ADS)

    Ingram, F. W.; Palmer, A. J.; Stites, D. J.

    1998-10-01

    The United States Department of Energy (US DOE) has initiated the development of an Irradiation Test Vehicle (ITV) for fusion materials irradiation at the Advanced Test Reactor (ATR) in Idaho Falls, Idaho, USA. The ITV is capable of providing neutron spectral tailoring and individual temperature control for up to 15 experiment capsules simultaneously. The test vehicle consists of three In-Pile Tubes (IPTs) running the length of the reactor vessel. These IPTs are kept dry and test trains with integral instrumentation are inserted and removed through a transfer shield plate above the reactor vessel head. The test vehicle is designed to irradiate specimens as large as 2.2 cm in diameter, at temperatures of 250-800°C, achieving neutron damage rates as high as 10 displacements per atom per year. The high fast to thermal neutron flux ratio required for fusion materials testing is accomplished by using an aluminum filler to displace as much water as possible from the flux trap and surrounding the filler piece with a ring of replaceable neutron absorbing material. The gas blend temperature control system remains in place from test to test, thus hardware costs for new tests are limited to the experiment capsule train and integral instrumentation.

  1. Methods for integrating optical fibers with advanced aerospace materials

    NASA Astrophysics Data System (ADS)

    Poland, Stephen H.; May, Russell G.; Murphy, Kent A.; Claus, Richard O.; Tran, Tuan A.; Miller, Mark S.

    1993-07-01

    Optical fibers are attractive candidates for sensing applications in near-term smart materials and structures, due to their inherent immunity to electromagnetic interference and ground loops, their capability for distributed and multiplexed operation, and their high sensitivity and dynamic range. These same attributes also render optical fibers attractive for avionics busses for fly-by-light systems in advanced aircraft. The integration of such optical fibers with metal and composite aircraft and aerospace materials, however, remains a limiting factor in their successful use in such applications. This paper first details methods for the practical integration of optical fiber waveguides and cable assemblies onto and into materials and structures. Physical properties of the optical fiber and coatings which affect the survivability of the fiber are then considered. Mechanisms for the transfer of the strain from matrix to fiber for sensor and data bus fibers integrated with composite structural elements are evaluated for their influence on fiber survivability, in applications where strain or impact is imparted to the assembly.

  2. Proteomic and metabolomic biomarkers for III-V semiconductors: And prospects for application to nano-materials

    SciTech Connect

    Fowler, Bruce A. Conner, Elizabeth A.; Yamauchi, Hiroshi

    2008-11-15

    There has been an increased appreciation over the last 20 years that chemical agents at very low dose levels can produce biological responses in protein expression patterns (proteomic responses) or alterations in sensitive metabolic pathways (metabolomic responses). Marked improvements in analytical methodologies, such as 2-D gel electrophoresis, matrix-assisted laser desorption-time of flight (MALDI-TOF) and surface enhanced laser desorption-time of flight (SELDI-TOF) technologies are capable of identifying specific protein patterns related to exposure to chemicals either alone or as mixtures. The detection and interpretation of early cellular responses to chemical agents have also made great advances through correlative ultrastructural morphometric and biochemical studies. Similarly, advances in analytical technologies such as HPLC, proton NMR, MALDI-TOF, and SELDI-TOF have permitted early detection of changes in a number of essential metabolic pathways following chemical exposures by measurement of alterations in metabolic products from those pathways. Data from these approaches are increasingly regarded as potentially useful biomarkers of chemical exposure and early cellular responses. Validation and establishment of linkages to biological outcomes are needed in order for biomarkers of effect to be established. This short review will cover a number of the above techniques and report data from chemical exposures to two binary III-V semiconductor compounds to illustrate gender differences in proteomic responses. In addition, the use of these methodologies in relation to rapid safety evaluations of nanotechnology products will be discussed. (Supported in part by NIH R01-ES4879)

  3. PREFACE: International Conference on Advanced Materials (ICAM 2015)

    NASA Astrophysics Data System (ADS)

    El-Khateeb, Mohammad Y.

    2015-10-01

    It is with great pleasure to welcome you to the "International Conference of Advanced Materials ICAM 2015" that will take place at Jordan University of Science and Technology (JUST), Irbid, Jordan. This year, the conference coincides with the coming of spring in Jordan; we hope the participants will enjoy the colors and fragrance of April in Jordan. The call for papers attracted submissions of over a hundred abstracts from twenty one different countries. These papers are going to be classified under four plenary lectures, fifteen invited papers, thirty five oral presentations and more than sixty posters covering the different research areas of the conference. The ICAM conference focuses on new advances in research in the field of materials covering chemical, physical and biological aspects. ICAM includes representatives from academia, industry, governmental and private sectors. The plenary and invited speakers will present, discuss, promote and disseminate research in all fields of advanced materials. Topics range from synthesis, applications, and solid state to nano-materials. In addition, talented junior investigators will present their best ongoing research at a poster session. We have also organized several workshops contiguous to the main conference, such as the one-day workshop on "Particle Surface Modification for Improved Applications". The purpose of this short course was to introduce interested materials technologists to several methodologies that have been developed to modify the surfaces of particulate matter. Moreover, a pre-conference workshop on "Communication in Science" was conducted for young scientists. The main goal of this workshop was to train young scientists in matters of interdisciplinary scientific communications. In addition to the scientific program, the attendees will have a chance to discover the beauty of Jordan, a land of rich history and varied culture. Numerous social events that will provide opportunities to renew old contacts and

  4. Method of doping a semiconductor

    DOEpatents

    Yang, Chiang Y.; Rapp, Robert A.

    1983-01-01

    A method for doping semiconductor material. An interface is established between a solid electrolyte and a semiconductor to be doped. The electrolyte is chosen to be an ionic conductor of the selected impurity and the semiconductor material and electrolyte are jointly chosen so that any compound formed from the impurity and the semiconductor will have a free energy no lower than the electrolyte. A potential is then established across the interface so as to allow the impurity ions to diffuse into the semiconductor. In one embodiment the semiconductor and electrolyte may be heated so as to increase the diffusion coefficient.

  5. Advances in thin film photonics: materials, science, and technology

    NASA Astrophysics Data System (ADS)

    Fortmann, Charles M.; Tonucci, Ronald J.; Anderson, Wayne A.; Teplin, C. W.; Mahan, A. H.

    2003-10-01

    Control of refractive index in amorphous silicon materials is investigated. Elementary waveguide structures were prepared on two micron thick amorphous silicon by photon lithographic patterning of a silver masking layer. Hydrogen was implanted at fluence of ~5×1017 cm2 for three energies, 50, 100 and 175 KeV yielding a total does of ~1.5×1018 cm2 consistent with a 10% increase in atoms due to the hydrogen addition. The optical properties of the implanted and non-implanted regions were probed as a function of low temperature annealing. The optical band gap shift to higher energy was consistent with hydrogen addition. Some darkening, absorption increase, were noted on the implanted regions. However, low temperature annealing is known to remove dangling bond damage in amorphous silicon. Prospects of utilizing these waveguides to probe light induced optical changes in amorphous silicon is described as well as the prospects of more advanced devices.

  6. Advanced materials for high-temperature solid electrolyte applications

    SciTech Connect

    Bates, J.L.; Chick, L.A.; Weber, W.J.; Youngblood, G.E.

    1990-05-01

    Advanced materials for use as electrodes, interconnections, and electrolytes in high-temperature electrochemical applications are under investigation. The air sinterability of La{sub 1-x}Sr{sub x}CrO{sub 3} is highly dependent upon a synergistic relationship between the (La + Sr)/Cr ratio, cation volatility, and second phase formation and transformation. Electrical conductivity in the ZrO{sub 2}--Y{sub 2}O{sub 3}--CeO{sub 2} and ZrO{sub 2}--Y{sub 2}O{sub 3}--TiO{sub 2} systems is highly dependent on composition and atmosphere. The electrochemical processes that occur at the solid-solid-gas interfaces in La(Sr)MnO{sub 3}/ZrO{sub 2}(Y{sub 2}O{sub 3}) have been studied using an unbonded interface cell and impedance spectroscopy. 6 refs., 7 figs.

  7. A Novel Approach to Material Development for Advanced Reactor Systems

    SciTech Connect

    Was, G.S.; Atzmon, M.; Wang, L.

    1999-12-22

    OAK B188 A Novel Approach to Material Development for Advanced Reactor Systems. Year one of this project had three major goals. First, to specify, order and install a new high current ion source for more rapid and stable proton irradiation. Second, to assess the use low temperature irradiation and chromium pre-enrichment in an effort to isolate a radiation damage microstructure in stainless steels without the effects of RIS. Third, to prepare for the irradiation of reactor pressure vessel steel and Zircaloy. In year 1 quarter 1, the project goal was to order the high current ion source and to procure and prepare samples of stainless steel for low temperature proton irradiation.

  8. A Novel Approach to Material Development for Advanced Reactor Systems

    SciTech Connect

    Was, G.S.; Atzmon, M.; Wang, L.

    2000-06-27

    OAK B188 A Novel Approach to Material Development for Advanced Reactor Systems. Year one of this project had three major goals. First, to specify, order and install a new high current ion source for more rapid and stable proton irradiation. Second, to assess the use of low temperature irradiation and chromium pre-enrichment in an effort to isolate a radiation damage microstructure in stainless steel without the effects of RIS. Third, to initiate irradiation of reactor pressure vessel steel and Zircaloy. In year 1 quarter 3, the project goal was to complete irradiation of model alloys of RPV steels for a range of doses and begin sample characterization. We also planned to prepare samples for microstructure isolation in stainless steels, and to identify sources of Zircaloy for irradiation and characterization.

  9. Adhesiveless Transfer Printing of Ultrathin Microscale Semiconductor Materials by Controlling the Bending Radius of an Elastomeric Stamp.

    PubMed

    Cho, Sungbum; Kim, Namyun; Song, Kwangsun; Lee, Jongho

    2016-08-01

    High-performance electronic devices integrated onto unconventional substrates provide opportunities for use in diverse applications, such as wearable or implantable forms of electronic devices. However, the interlayer adhesives between the electronic devices and substrates often limit processing temperature or cause electrical or thermal resistance at the interface. This paper introduces a very simple but effective transfer printing method that does not require an interlayer adhesive. Controlling the bending radius of a simple flat stamp enables picking up or printing of microscale semiconductor materials onto rigid, curvilinear, or flexible surfaces without the aid of a liquid adhesive. Theoretical and experimental studies reveal the underlying mechanism of the suggested approach. Adhesiveless printing of thin Si plates onto diverse substrates demonstrates the capability of this method. PMID:27458878

  10. Novel particle and radiation sources and advanced materials

    NASA Astrophysics Data System (ADS)

    Mako, Frederick

    2016-03-01

    The influence Norman Rostoker had on the lives of those who had the pleasure of knowing him is profound. The skills and knowledge I gained as a graduate student researching collective ion acceleration has fueled a career that has evolved from particle beam physics to include particle and radiation source development and advanced materials research, among many other exciting projects. The graduate research performed on collective ion acceleration was extended by others to form the backbone for laser driven plasma ion acceleration. Several years after graduate school I formed FM Technologies, Inc., (FMT), and later Electron Technologies, Inc. (ETI). Currently, as the founder and president of both FMT and ETI, the Rostoker influence can still be felt. One technology that we developed is a self-bunching RF fed electron gun, called the Micro-Pulse Gun (MPG). The MPG has important applications for RF accelerators and microwave tube technology, specifically clinically improved medical linacs and "green" klystrons. In addition to electron beam and RF source research, knowledge of materials and material interactions gained indirectly in graduate school has blossomed into breakthroughs in materials joining technologies. Most recently, silicon carbide joining technology has been developed that gives robust helium leak tight, high temperature and high strength joints between ceramic-to-ceramic and ceramic-to-metal. This joining technology has the potential to revolutionize the ethylene production, nuclear fuel and solar receiver industries by finally allowing for the practical use of silicon carbide as furnace coils, fuel rods and solar receptors, respectively, which are applications that have been needed for decades.

  11. Special Issue featuring invited articles arising from UK Semiconductors 2012

    NASA Astrophysics Data System (ADS)

    Clarke, Edmund; Wada, Osamu

    2013-07-01

    Semiconductor research has formed the basis of many technological advances over the past 50 years, and the field is still highly active, as new material systems and device concepts are developed to address new applications or operating conditions. In addition to the development of traditional semiconductor devices, the wealth of experience with these materials also allows their use as an ideal environment for testing new physics, leading to new classes of devices exploiting quantum mechanical effects that can also benefit from the advantages of existing semiconductor technology in scalability, compactness and ease of mass production. This special issue features papers arising from the UK Semiconductors 2012 Conference, held at the University of Sheffield. The annual conference covers all aspects of semiconductor research, from crystal growth, through investigations of the physics of semiconductor structures to realization of semiconductor devices and their application in emerging technologies. The 2012 conference featured over 150 presentations, including plenary sessions on interband cascade lasers for the 3-6 µm spectral band, efficient single photon sources based on InAs quantum dots embedded in GaAs photonic nanowires, nitride-based quantum dot visible lasers and single photon sources, and engineering of organic light-emitting diodes. The seven papers collected here highlight current research advances, taken from across the scope of the conference. The papers feature growth of novel nitride-antimonide material systems for mid-infrared sources and detectors, use of semiconductor nanostructures for charge-based memory and visible lasers, optimization of device structures either to reduce losses in solar cells or achieve low noise amplification in transistors, design considerations for surface-emitting lasers incorporating photonic crystals and an assessment of laser power convertors for power transfer. The editors of this special issue and the conference

  12. Ionic and electronic behaviors of earth-abundant semiconductor materials and their applications toward solar energy harvesting

    NASA Astrophysics Data System (ADS)

    Mayer, Matthew T.

    Semiconductor devices offer promise for efficient conversion of sunlight into other useful forms of energy, in either photovoltaic or photoelectrochemical cell configurations to produce electrical power or chemical energy, respectively. This dissertation examines ionic and electronic phenomena in some candidate semiconductors and seeks to understand their implications toward solar energy conversion applications. First, copper sulfide (Cu2S) was examined as a candidate photovoltaic material. It was discovered that its unique property of cation diffusion allows the room-temperature synthesis of vertically-aligned nanowire arrays, a morphology which facilitates study of the diffusion processes. This diffusivity was found to induce hysteresis in the electronic behavior, leading to the phenomena of resistive switching and negative differential resistance. The Cu2S were then demonstrated as morphological templates for solid-state conversion into different types of heterostructures, including segmented and rod-in-tube morphologies. Near-complete conversion to ZnS, enabled by the out-diffusion of Cu back into the substrate, was also achieved. While the ion diffusion property likely hinders the reliability of Cu 2S in photovoltaic applications, it was shown to enable useful electronic and ionic behaviors. Secondly, iron oxide (Fe2O3, hematite) was examined as a photoanode for photoelectrochemical water splitting. Its energetic limitations toward the water electrolysis reactions were addressed using two approaches aimed at achieving greater photovoltages and thereby improved water splitting efficiencies. In the first, a built-in n-p junction produced an internal field to drive charge separation and generate photovoltage. In the second, Fe 2O3 was deposited onto a smaller band gap material, silicon, to form a device capable of producing enhanced total photovoltage by a dual-absorber Z-scheme mechanism. Both approaches resulted in a cathodic shift of the photocurrent onset

  13. Semiconductor microcavity lasers

    SciTech Connect

    Gourley, P.L.; Wendt, J.R.; Vawter, G.A.; Warren, M.E.; Brennan, T.M.; Hammons, B.E.

    1994-02-01

    New kinds of semiconductor microcavity lasers are being created by modern semiconductor technologies like molecular beam epitaxy and electron beam lithography. These new microcavities exploit 3-dimensional architectures possible with epitaxial layering and surface patterning. The physical properties of these microcavities are intimately related to the geometry imposed on the semiconductor materials. Among these microcavities are surface-emitting structures which have many useful properties for commercial purposes. This paper reviews the basic physics of these microstructured lasers.

  14. Multiscale and Multiphysics Modeling of Additive Manufacturing of Advanced Materials

    NASA Technical Reports Server (NTRS)

    Liou, Frank; Newkirk, Joseph; Fan, Zhiqiang; Sparks, Todd; Chen, Xueyang; Fletcher, Kenneth; Zhang, Jingwei; Zhang, Yunlu; Kumar, Kannan Suresh; Karnati, Sreekar

    2015-01-01

    The objective of this proposed project is to research and develop a prediction tool for advanced additive manufacturing (AAM) processes for advanced materials and develop experimental methods to provide fundamental properties and establish validation data. Aircraft structures and engines demand materials that are stronger, useable at much higher temperatures, provide less acoustic transmission, and enable more aeroelastic tailoring than those currently used. Significant improvements in properties can only be achieved by processing the materials under nonequilibrium conditions, such as AAM processes. AAM processes encompass a class of processes that use a focused heat source to create a melt pool on a substrate. Examples include Electron Beam Freeform Fabrication and Direct Metal Deposition. These types of additive processes enable fabrication of parts directly from CAD drawings. To achieve the desired material properties and geometries of the final structure, assessing the impact of process parameters and predicting optimized conditions with numerical modeling as an effective prediction tool is necessary. The targets for the processing are multiple and at different spatial scales, and the physical phenomena associated occur in multiphysics and multiscale. In this project, the research work has been developed to model AAM processes in a multiscale and multiphysics approach. A macroscale model was developed to investigate the residual stresses and distortion in AAM processes. A sequentially coupled, thermomechanical, finite element model was developed and validated experimentally. The results showed the temperature distribution, residual stress, and deformation within the formed deposits and substrates. A mesoscale model was developed to include heat transfer, phase change with mushy zone, incompressible free surface flow, solute redistribution, and surface tension. Because of excessive computing time needed, a parallel computing approach was also tested. In addition

  15. Evaluation of Novel Semiconductor Materials Potentially Useful in Solar Cells: Cooperative Research and Development Final Report, CRADA number CRD-06-00172

    SciTech Connect

    Geisz, J.

    2010-07-01

    Evaluation of novel semiconductor materials potentially useful in solar cells. NREL will fabricate, test and analyze solar cells from EpiWorks' wafers produced in 2-3 separate growth campaigns. NREL will also characterize material from 2-3 separate EpiWorks material development campaigns. Finally, NREL will visit EpiWorks and help establish any necessary process, such as spectral CV measurements and III-V on Si metalization processes and help validate solar cell designs and performance.

  16. Practical Issues for Atom Probe Tomography Analysis of III-Nitride Semiconductor Materials.

    PubMed

    Tang, Fengzai; Moody, Michael P; Martin, Tomas L; Bagot, Paul A J; Kappers, Menno J; Oliver, Rachel A

    2015-06-01

    Various practical issues affecting atom probe tomography (APT) analysis of III-nitride semiconductors have been studied as part of an investigation using a c-plane InAlN/GaN heterostructure. Specimen preparation was undertaken using a focused ion beam microscope with a mono-isotopic Ga source. This enabled the unambiguous observation of implantation damage induced by sample preparation. In the reconstructed InAlN layer Ga implantation was demonstrated for the standard "clean-up" voltage (5 kV), but this was significantly reduced by using a lower voltage (e.g., 1 kV). The characteristics of APT data from the desorption maps to the mass spectra and measured chemical compositions were examined within the GaN buffer layer underlying the InAlN layer in both pulsed laser and pulsed voltage modes. The measured Ga content increased monotonically with increasing laser pulse energy and voltage pulse fraction within the examined ranges. The best results were obtained at very low laser energy, with the Ga content close to the expected stoichiometric value for GaN and the associated desorption map showing a clear crystallographic pole structure. PMID:25926083

  17. Computational Nano-materials Design for Spin-Currents Control in Semiconductor Nano-spintronics

    NASA Astrophysics Data System (ADS)

    Katayama-Yoshida, Hiroshi; Fukushima, Tetsuya; Dinh, Van An; Sato, Kazunori

    2008-03-01

    We design the different exchange mechanism like Zener's double exchange, Zener's p-d exchange and super-exchange in dilute magnetic semiconductors (DMS) by ab initio calculations. We obtain a universal trend for the exchange interactions [1]. We show that self-organized spinodal nano-decomposition (Dairiseki- Phase) offers the functionality to have high Curie temperatures[2]. We show that spinodal nano-decomposition under layer-by-layer crystal growth condition (2D) leads to quasi-one dimensional nano-structures (Konbu-Phase) with highly anisotropic shape and high TC[2]. We design a spin-currents- controlled 100 Tera bits/icnh^2, Tera Hz switching, and non- volatile MRAM without Si-CMOS based on Konbu-Phase [2]. In addition to the conventional Peltier effect, we propose a colossal thermoelectric-cooling power based on the adiabatic spin-entropy expansion in a Konbu-Phase [3]. [1] B. Belhadaji et al., J. Phys.-Condens. Matter, 19 (2007) 436227. [2] H. Katayama-Yoshida et al., Phys. stat. sol. (a) 204 (2007) 15. [3] H. Katayama-Yoshida et al., Jpn. J. Appl. Phys. 46 (2007) L777.

  18. Recipient luminophoric mediums having narrow spectrum luminescent materials and related semiconductor light emitting devices and methods

    SciTech Connect

    LeToquin, Ronan P; Tong, Tao; Glass, Robert C

    2014-12-30

    Light emitting devices include a light emitting diode ("LED") and a recipient luminophoric medium that is configured to down-convert at least some of the light emitted by the LED. In some embodiments, the recipient luminophoric medium includes a first broad-spectrum luminescent material and a narrow-spectrum luminescent material. The broad-spectrum luminescent material may down-convert radiation emitted by the LED to radiation having a peak wavelength in the red color range. The narrow-spectrum luminescent material may also down-convert radiation emitted by the LED into the cyan, green or red color range.

  19. Experimental and computing strategies in advanced material characterization problems

    NASA Astrophysics Data System (ADS)

    Bolzon, G.

    2015-10-01

    The mechanical characterization of materials relies more and more often on sophisticated experimental methods that permit to acquire a large amount of data and, contemporarily, to reduce the invasiveness of the tests. This evolution accompanies the growing demand of non-destructive diagnostic tools that assess the safety level of components in use in structures and infrastructures, for instance in the strategic energy sector. Advanced material systems and properties that are not amenable to traditional techniques, for instance thin layered structures and their adhesion on the relevant substrates, can be also characterized by means of combined experimental-numerical tools elaborating data acquired by full-field measurement techniques. In this context, parameter identification procedures involve the repeated simulation of the laboratory or in situ tests by sophisticated and usually expensive non-linear analyses while, in some situation, reliable and accurate results would be required in real time. The effectiveness and the filtering capabilities of reduced models based on decomposition and interpolation techniques can be profitably used to meet these conflicting requirements. This communication intends to summarize some results recently achieved in this field by the author and her co-workers. The aim is to foster further interaction between engineering and mathematical communities.

  20. Experimental and computing strategies in advanced material characterization problems

    SciTech Connect

    Bolzon, G.

    2015-10-28

    The mechanical characterization of materials relies more and more often on sophisticated experimental methods that permit to acquire a large amount of data and, contemporarily, to reduce the invasiveness of the tests. This evolution accompanies the growing demand of non-destructive diagnostic tools that assess the safety level of components in use in structures and infrastructures, for instance in the strategic energy sector. Advanced material systems and properties that are not amenable to traditional techniques, for instance thin layered structures and their adhesion on the relevant substrates, can be also characterized by means of combined experimental-numerical tools elaborating data acquired by full-field measurement techniques. In this context, parameter identification procedures involve the repeated simulation of the laboratory or in situ tests by sophisticated and usually expensive non-linear analyses while, in some situation, reliable and accurate results would be required in real time. The effectiveness and the filtering capabilities of reduced models based on decomposition and interpolation techniques can be profitably used to meet these conflicting requirements. This communication intends to summarize some results recently achieved in this field by the author and her co-workers. The aim is to foster further interaction between engineering and mathematical communities.

  1. Advanced thermoelectric materials with enhanced crystal lattice structure and methods of preparation

    NASA Technical Reports Server (NTRS)

    Fleurial, Jean-Pierre (Inventor); Caillat, Thierry F. (Inventor); Borshchevsky, Alexander (Inventor)

    1998-01-01

    New skutterudite phases including Ru.sub.0.5 Pd.sub.0.5 Sb.sub.3, RuSb.sub.2 Te, and FeSb.sub.2 Te, have been prepared having desirable thermoelectric properties. In addition, a novel thermoelectric device has been prepared using skutterudite phase Fe.sub.0.5 Ni.sub.0.5 Sb.sub.3. The skutterudite-type crystal lattice structure of these semiconductor compounds and their enhanced thermoelectric properties results in semiconductor materials which may be used in the fabrication of thermoelectric elements to substantially improve the efficiency of the resulting thermoelectric device. Semiconductor materials having the desired skutterudite-type crystal lattice structure may be prepared in accordance with the present invention by using powder metallurgy techniques. Measurements of electrical and thermal transport properties of selected semiconductor materials prepared in accordance with the present invention, demonstrated high Hall mobilities and good Seebeck coefficients. These materials have low thermal conductivity and relatively low electrical resistivity, and are good candidates for low temperature thermoelectric applications.

  2. Device Concepts in Semiconductor Spintronics

    NASA Astrophysics Data System (ADS)

    Molenkamp, Laurens W.

    Semiconductor spintronics has now reached a stage where the basic physical mechanisms controlling spin injection and detection are understood. Moreover, some critical technological issues involved in the growth and lithography of the magnetic semiconductors have been solved. This has allowed us to explore the physics of meanwhile quite complex spintronic devices. The lectures will start with an introduction to spin transport in metals and semiconductors. Building upon this, I will discuss various simple devices that demonstrate this basic physics in action. Subsequently, more advanced devices will be covered. For example, I will discuss resonant tunneling diodes (RTDs) fabricated from paramagnetic II-VI semiconductors that can be operated as a voltage controlled spin-switch. A quantum dot version of these RTDs exhibits, unexpectedly, remanent magnetism at zero external field, which we interpret as resulting from tunneling through a single magnetic polaron. In the ferromagnetic semiconductor (Ga, Mn)As we have observed a very large spin valve effect due to domain wall pinning at sub-10 nm sized constrictions. Furthermore, we have found a novel magnetoresistance effect in this material, dubbed tunnel anisotropic magnetoresistance (TAMR), which is due to the strongly (magneto-)anisotropic density of states in a ferromagnetic semiconductor. The effect leads to the observation of a spin valve-like behavior in tunnel structures containg a single ferromagnetic layer and also dominates the spin-valve signal obtained from structures containing two (Ga, Mn)As layers, where the effect may cause resistance changes of five orders of magnitude. Note from Publisher: This article contains the abstract only.

  3. Bulk crystal growth, and high-resolution x-ray diffraction results of LiZnP semiconductor material

    NASA Astrophysics Data System (ADS)

    Montag, Benjamin W.; Reichenberger, Michael A.; Sunder, Madhana; Ugorowski, Philip B.; Nelson, Kyle A.; McGregor, Douglas S.

    2015-06-01

    Nowotny-Juza compounds continue to be explored as a candidate for solid-state neutron detectors. Such a device would have greater efficiency, in a compact form, than present day gas-filled 3He and 10BF3 detectors. The 6Li(n,t)4He reaction yields a total Q-value of 4.78 MeV, larger than 10B, an energy easily identified above background radiations. Hence, devices fabricated from semiconducting compounds containing either natural Li (nominally 7.5% 6Li) or enriched 6Li (usually 95% 6Li) may provide a semiconductor material for compact high efficiency neutron detectors. Starting material was synthesized by preparing equimolar portions of Li, Zn, and P sealed under vacuum (10-6 Torr) in quartz ampoules lined with boron nitride and subsequently reacted in a compounding furnace [1]. The synthesized material showed signs of high impurity levels from material and electrical property characterizations. A static vacuum sublimation in quartz was performed to help purify the synthesized material [2]. Bulk crystalline samples were grown from the purified material. An ingot 9.6 mm in diameter and 4.0 mm in length was harvested. Individual samples were characterized for crystallinity on a Bruker AXS Inc. D2 CRYSO, energy dispersive x-ray diffractometer, and a Bruker AXS D8 DISCOVER, high-resolution x-ray diffractometer with a 0.004° beam divergence. The (220) orientation was characterized as the main orientation with the D2 CRYSO, and confirmed with the D8 DISCOVER. An out-of-plane high-resolution rocking curve yielded a 0.417° full width at half maximum (FWHM) for the (220) LiZnP. In-plane ordering was confirmed by observation of the (311) orientation, where a rocking curve was collected with a FWHM of 0.294°.

  4. ASTM E 1559 method for measuring material outgassing/deposition kinetics has applications to aerospace, electronics, and semiconductor industries

    NASA Technical Reports Server (NTRS)

    Garrett, J. W.; Glassford, A. P. M.; Steakley, J. M.

    1994-01-01

    The American Society for Testing and Materials has published a new standard test method for characterizing time and temperature-dependence of material outgassing kinetics and the deposition kinetics of outgassed species on surfaces at various temperatures. This new ASTM standard, E 1559(1), uses the quartz crystal microbalance (QCM) collection measurement approach. The test method was originally developed under a program sponsored by the United States Air Force Materials Laboratory (AFML) to create a standard test method for obtaining outgassing and deposition kinetics data for spacecraft materials. Standardization by ASTM recognizes that the method has applications beyond aerospace. In particular, the method will provide data of use to the electronics, semiconductor, and high vacuum industries. In ASTM E 1559 the material sample is held in vacuum in a temperature-controlled effusion cell, while its outgassing flux impinges on several QCM's which view the orifice of the effusion cell. Sample isothermal total mass loss (TML) is measured as a function of time from the mass collected on one of the QCM's which is cooled by liquid nitrogen, and the view factor from this QCM to the cell. The amount of outgassed volatile condensable material (VCM) on surfaces at higher temperatures is measured as a function of time during the isothermal outgassing test by controlling the temperatures of the remaining QCM's to selected values. The VCM on surfaces at temperatures in between those of the collector QCM's is determined at the end of the isothermal test by heating the QCM's at a controlled rate and measuring the mass loss from the end of the QCM's as a function of time and temperature. This reevaporation of the deposit collected on the QCM's is referred to as QCM thermogravimetric analysis. Isothermal outgassing and deposition rates can be determined by differentiating the isothermal TML and VCM data, respectively, while the evaporation rates of the species can be obtained as a

  5. Novel materials for advanced supercapacitors and Li-ion batteries

    NASA Astrophysics Data System (ADS)

    Yushin, Gleb

    2009-11-01

    High power energy storage devices, such as supercapacitors and Li-ion batteries, are critical for the development of zero-emission electrical vehicles, large scale smart grid, and energy efficient cargo ships and locomotives. The energy storage characteristics of supercapacitors and Li-ion batteries are mostly determined by the specific capacities of their electrodes, while their power characteristics are influenced by the maximum rate of the ion transport. The talk will focus on the development of nanocomposite electrodes capable to improve both the energy and power storage characteristics of the state of the art devices. Advanced ultra-high surface area carbons, carbon-polymer, and carbon-metal oxide nanocomposites have been demonstrated to greatly exceed the specific capacitance of traditional electrodes for supercapacitors. In addition, selected materials showed the unprecedented ultra-fast charging and discharging characteristics. Intelligently designed Si-C composites showed up to 5 times higher specific capacity than graphite, the conventional anode material in Li-ion batteries. Achieving stable performance of Si anodes is commonly a challenge. Recent experiments suggest that individual Si nanoparticles and thin films below a critical size do not fracture and exhibit high reversible capacity for Li. The often observed rapid degradation of Si-based anodes is related not to the intrinsic property of Si but to the loss of electrical contact within the anodes caused by the large volume changes that takes place during Li insertion and extraction. Successful synthesis of high capacity nanocomposite Si-C particles that do not exhibit volume changes during Li insertion and extraction allowed us to achieve stable performance. In order to overcome the limitations of traditional composites precise control over the materials' structure and porosity at the nanoscale was required.

  6. EDITORIAL The 23rd Nordic Semiconductor Meeting The 23rd Nordic Semiconductor Meeting

    NASA Astrophysics Data System (ADS)

    Ólafsson, Sveinn; Sveinbjörnsson, Einar

    2010-12-01

    A Nordic Semiconductor Meeting is held every other year with the venue rotating amongst the Nordic countries of Denmark, Finland, Iceland, Norway and Sweden. The focus of these meetings remains 'original research and science being carried out on semiconductor materials, devices and systems'. Reports on industrial activity have usually featured. The topics have ranged from fundamental research on point defects in a semiconductor to system architecture of semiconductor electronic devices. Proceedings from these events are regularly published as a topical issue of Physica Scripta. All of the papers in this topical issue have undergone critical peer review and we wish to thank the reviewers and the authors for their cooperation, which has been instrumental in meeting the high scientific standards and quality of the series. This meeting of the 23rd Nordic Semiconductor community, NSM 2009, was held at Háskólatorg at the campus of the University of Iceland, Reykjavik, Iceland, 14-17 June 2009. Support was provided by the University of Iceland. Almost 50 participants presented a broad range of topics covering semiconductor materials and devices as well as related material science interests. The conference provided a forum for Nordic and international scientists to present and discuss new results and ideas concerning the fundamentals and applications of semiconductor materials. The meeting aim was to advance the progress of Nordic science and thus aid in future worldwide technological advances concerning technology, education, energy and the environment. Topics Theory and fundamental physics of semiconductors Emerging semiconductor technologies (for example III-V integration on Si, novel Si devices, graphene) Energy and semiconductors Optical phenomena and optical devices MEMS and sensors Program 14 June Registration 13:00-17:00 15 June Meeting program 09:30-17:00 and Poster Session I 16 June Meeting program 09:30-17:00 and Poster Session II 17 June Excursion and dinner

  7. Materials and device design with III-V and II-VI compound-based diluted magnetic semiconductors

    NASA Astrophysics Data System (ADS)

    Katayama-Yoshida, Hiroshi; Sato, Kazunori

    2002-03-01

    Since the discovery of the carrier induced ferromagnetism in (In, Mn)As and (Ga, Mn)As, diluted magnetic semiconductors (DMS) have been of much interest from the industrial viewpoint because of their potentiality as a new functional material (spintronics). In this paper, the magnetism in DMS is investigated based on the first principles calculations, and materials and device design with the DMS is proposed toward the spintronics. The electronic structure is calculated by the Korringa-Kohn-Rostoker method combined with the coherent potential approximation based on the local spin density approximation. We calculate the electronic structure of ferromagnetic and spin-glass DMS, and total energy difference between them is calculated to estimate whether the ferromagnetic state is stable or not. It is shown that V-, Cr- and Mn-doped III-V compounds, V- and Cr-doped II-VI compounds and Fe-, Co- and Ni-doped ZnO are promising candidates for a high-Curie temperature ferromagnet. A chemical trend in the ferromagnetism is well understood based on the double exchange mechanism [1]. Based upon this material design, some prototypes of the spintronics devices, such as a spin-FET, a photo-induced-magnetic memory and a coherent-spin-infection device, are proposed. [1] K. Sato and H. Katayama-Yoshida, Jpn. J. Appl. Phys. 39 (2000) L555, 40 (2001) L334, L485 and L651.

  8. Materials design of dilute magnetic semiconductors based on the control of spinodal decomposition

    NASA Astrophysics Data System (ADS)

    Sato, Kazunori

    2010-03-01

    Recently, spinodal decomposition phenomena attract much attention in the fabrication of dilute magnetic semiconductors (DMS). Many experimental results indicate that the magnetic properties of DMS are strongly affected by the occurrence of spinodal decomposition [1], thus people are now interested in controlling the magnetic properties of DMS by tuning the spinodal decomposition. In this talk, I will discuss spinodal decomposition in DMS based on the first-principles calculation. The electronic structure of DMS is calculated by using the Korringa-Kohn-Rostoker coherent potential approximation method. Based on the calculated mixing energy I will discuss phase diagrams of DMS systems and their chemical trends. By using the calculated chemical pair interactions between magnetic impurities in DMS, the self-organization of nano-structures in DMS of the nano-structures are simulated by using the Monte Carlo method. The simulation results indicate that we can control super-paramagnetic blocking temperature by optimizing the size of the nano-structures by changing the crystal growth condition [2]. Next, I will propose co-doping method to control solubility limit of magnetic impurities in DMS. From the total energy calculations, it is shown that the solubility of magnetic impurities is strongly enhanced under the existence of interstitial donors [2]. However, due to the compensation of holes by the co-dopants, the ferromagnetism is suppressed. Based on the kinetic Monte Carlo simulations, we propose low temperature annealing method to remove interstitial co-dopants for recovering the ferromagnetism. By combining the co-doping and the low temperature annealing, we can fabricate DMS with high concentration of magnetic impurities which should show high-Tc. This work is based on the collaboration with H. Fujii, L. Bergqvist, P. H. Dederichs and H. Katayama-Yoshida.[4pt] [1] A. Bonanni, Semicond. Sci. Technol. 22 (2007) R41.[0pt] [2] K. Sato et al., Rev. Mod. Phys. Phys

  9. Designing small molecule polyaromatic p- and n-type semiconductor materials for organic electronics

    NASA Astrophysics Data System (ADS)

    Collis, Gavin E.

    2015-12-01

    By combining computational aided design with synthetic chemistry, we are able to identify core 2D polyaromatic small molecule templates with the necessary optoelectronic properties for p- and n-type materials. By judicious selection of the functional groups, we can tune the physical properties of the material making them amenable to solution and vacuum deposition. In addition to solubility, we observe that the functional group can influence the thin film molecular packing. By developing structure-property relationships (SPRs) for these families of compounds we observe that some compounds are better suited for use in organic solar cells, while others, varying only slightly in structure, are favoured in organic field effect transistor devices. We also find that the processing conditions can have a dramatic impact on molecular packing (i.e. 1D vs 2D polymorphism) and charge mobility; this has implications for material and device long term stability. We have developed small molecule p- and n-type materials for organic solar cells with efficiencies exceeding 2%. Subtle variations in the functional groups of these materials produces p- and ntype materials with mobilities higher than 0.3 cm2/Vs. We are also interested in using our SPR approach to develop materials for sensor and bioelectronic applications.

  10. CaTiO.sub.3 Interfacial template structure on semiconductor-based material and the growth of electroceramic thin-films in the perovskite class

    DOEpatents

    McKee, Rodney Allen; Walker, Frederick Joseph

    1998-01-01

    A structure including a film of a desired perovskite oxide which overlies and is fully commensurate with the material surface of a semiconductor-based substrate and an associated process for constructing the structure involves the build up of an interfacial template film of perovskite between the material surface and the desired perovskite film. The lattice parameters of the material surface and the perovskite of the template film are taken into account so that during the growth of the perovskite template film upon the material surface, the orientation of the perovskite of the template is rotated 45.degree. with respect to the orientation of the underlying material surface and thereby effects a transition in the lattice structure from fcc (of the semiconductor-based material) to the simple cubic lattice structure of perovskite while the fully commensurate periodicity between the perovskite template film and the underlying material surface is maintained. The film-growth techniques of the invention can be used to fabricate solid state electrical components wherein a perovskite film is built up upon a semiconductor-based material and the perovskite film is adapted to exhibit ferroelectric, piezoelectric, pyroelectric, electro-optic or large dielectric properties during use of the component.

  11. Control method and system for use when growing thin-films on semiconductor-based materials

    DOEpatents

    McKee, Rodney A.; Walker, Frederick J.

    2001-01-01

    A process and system for use during the growth of a thin film upon the surface of a substrate by exposing the substrate surface to vaporized material in a high vacuum (HV) facility involves the directing of an electron beam generally toward the surface of the substrate as the substrate is exposed to vaporized material so that electrons are diffracted from the substrate surface by the beam and the monitoring of the pattern of electrons diffracted from the substrate surface as vaporized material settles upon the substrate surface. When the monitored pattern achieves a condition indicative of the desired condition of the thin film being grown upon the substrate, the exposure of the substrate to the vaporized materials is shut off or otherwise adjusted. To facilitate the adjustment of the crystallographic orientation of the film relative to the electron beam, the system includes a mechanism for altering the orientation of the surface of the substrate relative to the electron beam.

  12. Recent developments in semiconductor gamma-ray detectors

    SciTech Connect

    Luke, Paul N.; Amman, Mark; Tindall, Craig; Lee, Julie S.

    2003-10-28

    The successful development of lithium-drifted Ge detectors in the 1960's marked the beginning of the significant use of semiconductor crystals for direct detection and spectroscopy of gamma rays. In the 1970's, high-purity Ge became available, which enabled the production of complex detectors and multi-detector systems. In the following decades, the technology of semiconductor gamma-ray detectors continued to advance, with significant developments not only in Ge detectors but also in Si detectors and room-temperature compound-semiconductor detectors. In recent years, our group at Lawrence Berkeley National Laboratory has developed a variety of gamma ray detectors based on these semiconductor materials. Examples include Ge strip detectors, lithium-drifted Si strip detectors, and coplanar-grid CdZnTe detectors. These advances provide new capabilities in the measurement of gamma rays, such as the ability to perform imaging and the realization of highly compact spectroscopy systems.

  13. Soft breakdown characteristics of ultralow-k time-dependent dielectric breakdown for advanced complementary metal-oxide semiconductor technologies

    NASA Astrophysics Data System (ADS)

    Chen, Fen; Shinosky, Michael

    2010-09-01

    During technology development, the study of ultralow-k (ULK) time-dependent dielectric breakdown (TDDB) is important for assuring robust reliability. As the technology advances, the increase in ULK leakage current noise level and reversible current change induced by soft breakdown (SBD) during stress has been observed. In this paper, the physical origin of SBD and reversible breakdown, and its correlation to conventional hard breakdowns (HBDs) were extensively studied. Based on constant voltage stress (CVS) and constant current stress (CCS) results, it was concluded that SBD in ULK is an intrinsic characteristic for ULK material, and all first breakdown events most likely are soft instead of hard. Therefore, a unified understanding of SBD and HBD for low-k TDDB was established. Furthermore, the post-SBD and HBD breakdown conduction characteristics were explored and their impacts on circuit operation were discussed. Based on current limited constant voltage stress studies, it was found that the power dissipation, not the stored energy, determined the severity of ULK dielectric breakdown, and the postbreakdown conduction properties. A percolation-threshold controlled, variable-range-hopping (VRH) model was proposed to explain all postbreakdown aspects of SBD and HBD of ULK material.

  14. Advanced radiation detector development: Advanced semiconductor detector development: Development of a room-temperature, gamma ray detector using gallium arsenide to develop an electrode detector. Annual progress report, September 30, 1994--September 29, 1995

    SciTech Connect

    Knoll, G.F.

    1995-11-01

    The advanced detector development project at the University of Michigan has completed the first full year of its current funding. The general goals are the development of radiation detectors and spectrometers that are capable of portable room temperature operation. Over the past 12 months, the authors have worked primarily in the development of semiconductor spectrometers with ``single carrier`` response that offer the promise of room temperature operation and good energy resolution in gamma ray spectroscopy. They have also begun a small scale effort at investigating the properties of a small non-spectroscopic detector system with directional characteristics that will allow identification of the approximate direction in which gamma rays are incident. These activities have made use of the extensive clean room facilities at the University of Michigan for semiconductor device fabrication, and also the radiation measurement capabilities provided in the laboratory in the Phoenix Building on the North Campus.

  15. Si(C≡C)4-Based Single-Crystalline Semiconductor: Diamond-like Superlight and Superflexible Wide-Bandgap Material for the UV Photoconductive Device.

    PubMed

    Sun, Ming-Jun; Cao, Xinrui; Cao, Zexing

    2016-07-01

    A wide-bandgap SiC4 semiconductor with low density and high elasticity has been designed and characterized by ab initio molecular dynamics simulations and first-principles calculations. The through-space conjugation among the d orbitals of Si and the π* orbitals of ethynyl moieties can remarkably enhance the photoconductivity. This new-type superlight and superflexible semiconductor is predicted to have unique electronic, optical, and mechanical properties, and it is a quite promising material for the high-performance UV optoelectronic devices suitable for various practical demands in a complex environment. PMID:27334253

  16. Evidence for electronic gap-driven metal-semiconductor transition in phase-change materials

    PubMed Central

    Shakhvorostov, Dmitry; Nistor, Razvan A.; Krusin-Elbaum, Lia; Martyna, Glenn J.; Newns, Dennis M.; Elmegreen, Bruce G.; Liu, Xiao-hu; Hughes, Zak E.; Paul, Sujata; Cabral, Cyril; Raoux, Simone; Shrekenhamer, David B.; Basov, Dimitri N.; Song, Young; Müser, Martin H.

    2009-01-01

    Phase-change materials are functionally important materials that can be thermally interconverted between metallic (crystalline) and semiconducting (amorphous) phases on a very short time scale. Although the interconversion appears to involve a change in local atomic coordination numbers, the electronic basis for this process is still unclear. Here, we demonstrate that in a nearly vacancy-free binary GeSb system where we can drive the phase change both thermally and, as we discover, by pressure, the transformation into the amorphous phase is electronic in origin. Correlations between conductivity, total system energy, and local atomic coordination revealed by experiments and long time ab initio simulations show that the structural reorganization into the amorphous state is driven by opening of an energy gap in the electronic density of states. The electronic driving force behind the phase change has the potential to change the interconversion paradigm in this material class. PMID:19549858

  17. Using advanced electron microscopy for the characterization of catalytic materials

    NASA Astrophysics Data System (ADS)

    Pyrz, William D.

    Catalysis will continue to be vitally important to the advancement and sustainability of industrialized societies. Unfortunately, the petroleum-based resources that currently fuel the energy and consumer product needs of an advancing society are becoming increasingly difficult and expensive to extract as supplies diminish and the quality of sources degrade. Therefore, the development of sustainable energy sources and the improvement of the carbon efficiency of existing chemical processes are critical. Further challenges require that these initiatives are accomplished in an environmentally friendly fashion since the effects of carbon-based emissions are proving to be a serious threat to global climate stability. In this dissertation, materials being developed for sustainable energy and process improvement initiatives are studied. Our approach is to use materials characterization, namely advanced electron microscopy, to analyze the targeted systems at the nano- or Angstrom-scale with the goal of developing useful relationships between structure, composition, crystalline order, morphology, and catalytic performance. One area of interest is the complex Mo-V-M-O (M=Te, Sb, Ta, Nb) oxide system currently being developed for the selective oxidation/ammoxidation of propane to acrylic acid or acrylonitrile, respectively. Currently, the production of acrylic acid and acrylonitrile rely on propylene-based processes, yet significant cost savings could be realized if the olefin-based feeds could be replaced by paraffin-based ones. The major challenge preventing this feedstock replacement is the development of a suitable paraffin-activating catalyst. Currently, the best candidate is the Mo-V-Nb-Te-O complex oxide catalyst that is composed of two majority phases that are commonly referred to as M1 and M2. However, there is a limited understanding of the roles of each component with respect to how they contribute to catalyst stability and the reaction mechanism. Aberration

  18. Materials Design from Nonequilibrium Steady States: Driven Graphene as a Tunable Semiconductor with Topological Properties

    NASA Astrophysics Data System (ADS)

    Iadecola, Thomas; Campbell, David; Chamon, Claudio; Hou, Chang-Yu; Jackiw, Roman; Pi, So-Young; Kusminskiy, Silvia Viola

    2013-04-01

    Controlling the properties of materials by driving them out of equilibrium is an exciting prospect that has only recently begun to be explored. In this Letter we give a striking theoretical example of such materials design: a tunable gap in monolayer graphene is generated by exciting a particular optical phonon. We show that the system reaches a steady state whose transport properties are the same as if the system had a static electronic gap, controllable by the driving amplitude. Moreover, the steady state displays topological phenomena: there are chiral edge currents, which circulate a fractional charge e/2 per rotation cycle, with the frequency set by the optical phonon frequency.

  19. Recent Advances in Conjugated Polymer Materials for Disease Diagnosis.

    PubMed

    Lv, Fengting; Qiu, Tian; Liu, Libing; Ying, Jianming; Wang, Shu

    2016-02-10

    The extraordinary optical amplification and light-harvesting properties of conjugated polymers impart sensing systems with higher sensitivity, which meets the primary demands of early cancer diagnosis. Recent advances in the detection of DNA methylation and mutation with polyfluorene derivatives based fluorescence resonance energy transfer (FRET) as a means to modulate fluorescent responses attest to the great promise of conjugated polymers as powerful tools for the clinical diagnosis of diseases. To facilitate the ever-changing needs of diagnosis, the development of detection approaches and FRET signal analysis are highlighted in this review. Due to their exceptional brightness, excellent photostability, and low or absent toxicity, conjugated polymers are verified as superior materials for in-vivo imaging, and provide feasibility for future clinical molecular-imaging applications. The integration of conjugated polymers with clinical research has shown profound effects on diagnosis for the early detection of disease-related biomarkers, as well as in-vivo imaging, which leads to a multidisciplinary scientific field with perspectives in both basic research and application issues. PMID:26679834

  20. Structural stability at high pressure, electronic, and magnetic properties of BaFZnAs: A new candidate of host material of diluted magnetic semiconductors

    NASA Astrophysics Data System (ADS)

    Bi-Juan, Chen; Zheng, Deng; Xian-Cheng, Wang; Shao-Min, Feng; Zhen, Yuan; Si-Jia, Zhang; Qing-Qing, Liu; Chang-Qing, Jin

    2016-07-01

    The layered semiconductor BaFZnAs with the tetragonal ZrCuSiAs-type structure has been successfully synthesized. Both the in-situ high-pressure synchrotron x-ray diffraction and the high-pressure Raman scattering measurements demonstrate that the structure of BaFZnAs is stable under pressure up to 17.5 GPa at room temperature. The resistivity and the magnetic susceptibility data show that BaFZnAs is a non-magnetic semiconductor. BaFZnAs is recommended as a candidate of the host material of diluted magnetic semiconductor. Project supported by the National Natural Science Foundation of China and Project of Ministry of Science and Technology of China.

  1. Photovoltaic semiconductor materials based on alloys of tin sulfide, and methods of production

    DOEpatents

    Lany, Stephan

    2016-06-07

    Photovoltaic thin-film materials comprising crystalline tin sulfide alloys of the general formula Sn.sub.1-x(R).sub.xS, where R is selected from magnesium, calcium and strontium, as well as methods of producing the same, are disclosed.

  2. Development of parametric material, energy, and emission inventories for wafer fabrication in the semiconductor industry.

    PubMed

    Murphy, Cynthia F; Kenig, George A; Allen, David T; Laurent, Jean-Philippe; Dyer, David E

    2003-12-01

    Currently available data suggest that most of the energy and material consumption related to the production of an integrated circuit is due to the wafer fabrication process. The complexity of wafer manufacturing, requiring hundreds of steps that vary from product to product and from facility to facility and which change every few years, has discouraged the development of material, energy, and emission inventory modules for the purpose of insertion into life cycle assessments. To address this difficulty, a flexible, process-based system for estimating material requirements, energy requirements, and emissions in wafer fabrication has been developed. The method accounts for mass and energy use atthe unit operation level. Parametric unit operation modules have been developed that can be used to predict changes in inventory as the result of changes in product design, equipment selection, or process flow. A case study of the application of the modules is given for energy consumption, but a similar methodology can be used for materials, individually or aggregated. PMID:14700322

  3. Skylab experiments. Volume 3: Materials science. [Skylab experiments on metallurgy, crystal growth, semiconductors, and combustion physics in weightless environment for high school level education

    NASA Technical Reports Server (NTRS)

    1973-01-01

    The materials science and technology investigation conducted on the Skylab vehicle are discussed. The thirteen experiments that support these investigations have been planned to evaluate the effect of a weightless environment on melting and resolidification of a variety of metals and semiconductor crystals, and on combustion of solid flammable materials. A glossary of terms which define the space activities and a bibliography of related data are presented.

  4. Advanced materials and concepts for energy storage devices

    NASA Astrophysics Data System (ADS)

    Teng, Shiang Jen

    Over the last decade, technological progress and advances in the miniaturization of electronic devices have increased demands for light-weight, high-efficiency, and carbon-free energy storage devices. These energy storage devices are expected to play important roles in automobiles, the military, power plants, and consumer electronics. Two main types of electrical energy storage systems studied in this research are Li ion batteries and supercapacitors. Several promising solid state electrolytes and supercapacitor electrode materials are investigated in this research. The first section of this dissertation is focused on the novel results on pulsed laser annealing of Li7La3Zr2O12 (LLZO). LLZO powders with a tetragonal structure were prepared by a sol-gel technique, then a pulsed laser annealing process was employed to convert the tetragonal powders to cubic LLZO without any loss of lithium. The second section of the dissertation reports on how Li5La 3Nb2O12 (LLNO) was successfully synthesized via a novel molten salt synthesis (MSS) method at the relatively low temperature of 900°C. The low sintering temperature prevented the loss of lithium that commonly occurs during synthesis using conventional solid state or wet chemical reactions. The second type of energy storage device studied is supercapacitors. Currently, research on supercapacitors is focused on increasing their energy densities and lowering their overall production costs by finding suitable electrode materials. The third section of this dissertation details how carbonized woods electrodes were used as supercapacitor electrode materials. A high energy density of 45.6 Wh/kg and a high power density of 2000 W/kg were obtained from the supercapacitor made from carbonized wood electrodes. The high performance of the supercapacitor was discovered to originate from the hierarchical porous structures of the carbonized wood. Finally, the fourth section of this dissertation is on the electrochemical effects of

  5. Recent advances in the molten salt destruction of energetic materials

    SciTech Connect

    Pruneda, C. O., LLNL

    1996-09-01

    We have demonstrated the use of the Molten Salt Destruction (MSD) Process for destroying explosives, liquid gun propellant, and explosives-contaminated materials on a 1.5 kg of explosive/hr bench- scale unit (1, 2, 3, 4, 5). In our recently constructed 5 kg/hr pilot- scale unit we have also demonstrated the destruction of a liquid gun propellant and simulated wastes containing HMX (octogen). MSD converts the organic constituents of the waste into non-hazardous substances such as carbon dioxide, nitrogen, and water. Any inorganic constituents of the waste, such as metallic particles, are retained in the molten salt. The destruction of energetic materials waste is accomplished by introducing it, together with air, into a vessel containing molten salt (a eutectic mixture of sodium, potassium, and lithium carbonates). The following pure explosives have been destroyed in our bench-scale experimental unit located at Lawrence Livermore National Laboratory`s (LLNL) High Explosives Applications Facility (HEAF): ammonium picrate, HMX, K- 6 (keto-RDX), NQ, NTO, PETN, RDX, TATB, and TNT. In addition, the following compositions were also destroyed: Comp B, LX- IO, LX- 1 6, LX- 17, PBX-9404, and XM46 (liquid gun propellant). In this 1.5 kg/hr bench-scale unit, the fractions of carbon converted to CO and of chemically bound nitrogen converted to NO{sub x} were found to be well below 1%. In addition to destroying explosive powders and compositions we have also destroyed materials that are typical of residues which result from explosives operations. These include shavings from machined pressed parts of plastic-bonded explosives and sump waste containing both explosives and non-explosive debris. Based on the process data obtained on the bench-scale unit we designed and constructed a next-generation 5 kg/hr pilot-scale unit, incorporating LLNL`s advanced chimney design. The pilot unit has completed process implementation operations and explosives safety reviews. To date, in this

  6. Recent advances in the development of yellow-orange GaInNAs-based semiconductor disk lasers

    NASA Astrophysics Data System (ADS)

    Leinonen, T.; Korpijärvi, V.-M.; Härkönen, A.; Guina, M.

    2012-03-01

    We review recent results concerning the development of dilute nitride based semiconductor disk lasers. We have demonstrated over 7.4 W of output power at the second harmonic wavelength (around 590 nm) using a β-BBO crystal. Over 10 W has been demonstrated at ~1.2 μm, and multi-watt output power has been achieved at 589 nm with narrow linewidth (δν < 20 MHz).

  7. FOREWORD: Focus on Superconductivity in Semiconductors Focus on Superconductivity in Semiconductors

    NASA Astrophysics Data System (ADS)

    Takano, Yoshihiko

    2008-12-01

    Since the discovery of superconductivity in diamond, much attention has been given to the issue of superconductivity in semiconductors. Because diamond has a large band gap of 5.5 eV, it is called a wide-gap semiconductor. Upon heavy boron doping over 3×1020 cm-3, diamond becomes metallic and demonstrates superconductivity at temperatures below 11.4 K. This discovery implies that a semiconductor can become a superconductor upon carrier doping. Recently, superconductivity was also discovered in boron-doped silicon and SiC semiconductors. The number of superconducting semiconductors has increased. In 2008 an Fe-based superconductor was discovered in a research project on carrier doping in a LaCuSeO wide-gap semiconductor. This discovery enhanced research activities in the field of superconductivity, where many scientists place particular importance on superconductivity in semiconductors. This focus issue features a variety of topics on superconductivity in semiconductors selected from the 2nd International Workshop on Superconductivity in Diamond and Related Materials (IWSDRM2008), which was held at the National Institute for Materials Science (NIMS), Tsukuba, Japan in July 2008. The 1st workshop was held in 2005 and was published as a special issue in Science and Technology of Advanced Materials (STAM) in 2006 (Takano 2006 Sci. Technol. Adv. Mater. 7 S1). The selection of papers describe many important experimental and theoretical studies on superconductivity in semiconductors. Topics on boron-doped diamond include isotope effects (Ekimov et al) and the detailed structure of boron sites, and the relation between superconductivity and disorder induced by boron doping. Regarding other semiconductors, the superconducting properties of silicon and SiC (Kriener et al, Muranaka et al and Yanase et al) are discussed, and In2O3 (Makise et al) is presented as a new superconducting semiconductor. Iron-based superconductors are presented as a new series of high

  8. Method of passivating semiconductor surfaces

    DOEpatents

    Wanlass, M.W.

    1990-06-19

    A method is described for passivating Group III-V or II-VI semiconductor compound surfaces. The method includes selecting a passivating material having a lattice constant substantially mismatched to the lattice constant of the semiconductor compound. The passivating material is then grown as an ultrathin layer of passivating material on the surface of the Group III-V or II-VI semiconductor compound. The passivating material is grown to a thickness sufficient to maintain a coherent interface between the ultrathin passivating material and the semiconductor compound. In addition, a device formed from such method is also disclosed.

  9. Method of passivating semiconductor surfaces

    DOEpatents

    Wanlass, Mark W.

    1990-01-01

    A method of passivating Group III-V or II-VI semiconductor compound surfaces. The method includes selecting a passivating material having a lattice constant substantially mismatched to the lattice constant of the semiconductor compound. The passivating material is then grown as an ultrathin layer of passivating material on the surface of the Group III-V or II-VI semiconductor compound. The passivating material is grown to a thickness sufficient to maintain a coherent interface between the ultrathin passivating material and the semiconductor compound. In addition, a device formed from such method is also disclosed.

  10. Advanced Laser Processing of Materials--Fundamentals and Applications

    NASA Technical Reports Server (NTRS)

    Jacobsohn, E.; Ryan, M.

    1995-01-01

    Preparation of amorphous thin films in semiconductors and their transition to the crystalline phase may apply to switching devices. Surfaces of single crystal samples of bulk In2Se3 and thin films of InSe were treated using an excimer laser, and microscopic examination showed the treated portions of the surface had become amorphous. Film samples of InSe were laser-treated like the bulk samples. Examination of these treated flims showed shifts in the optical transmittance spectra as well as surface morphology changes.

  11. Ultrathin coatings of nanoporous materials as property enhancements for advanced functional materials.

    SciTech Connect

    Coker, Eric Nicholas

    2010-11-01

    This report summarizes the findings of a five-month LDRD project funded through Sandia's NTM Investment Area. The project was aimed at providing the foundation for the development of advanced functional materials through the application of ultrathin coatings of microporous or mesoporous materials onto the surface of substrates such as silicon wafers. Prior art teaches that layers of microporous materials such as zeolites may be applied as, e.g., sensor platforms or gas separation membranes. These layers, however, are typically several microns to several hundred microns thick. For many potential applications, vast improvements in the response of a device could be realized if the thickness of the porous layer were reduced to tens of nanometers. However, a basic understanding of how to synthesize or fabricate such ultra-thin layers is lacking. This report describes traditional and novel approaches to the growth of layers of microporous materials on silicon wafers. The novel approaches include reduction of the quantity of nutrients available to grow the zeolite layer through minimization of solution volume, and reaction of organic base (template) with thermally-oxidized silicon wafers under a steam atmosphere to generate ultra-thin layers of zeolite MFI.

  12. Depleted uranium hexafluoride: The source material for advanced shielding systems

    SciTech Connect

    Quapp, W.J.; Lessing, P.A.; Cooley, C.R.

    1997-02-01

    The U.S. Department of Energy (DOE) has a management challenge and financial liability problem in the form of 50,000 cylinders containing 555,000 metric tons of depleted uranium hexafluoride (UF{sub 6}) that are stored at the gaseous diffusion plants. DOE is evaluating several options for the disposition of this UF{sub 6}, including continued storage, disposal, and recycle into a product. Based on studies conducted to date, the most feasible recycle option for the depleted uranium is shielding in low-level waste, spent nuclear fuel, or vitrified high-level waste containers. Estimates for the cost of disposal, using existing technologies, range between $3.8 and $11.3 billion depending on factors such as the disposal site and the applicability of the Resource Conservation and Recovery Act (RCRA). Advanced technologies can reduce these costs, but UF{sub 6} disposal still represents large future costs. This paper describes an application for depleted uranium in which depleted uranium hexafluoride is converted into an oxide and then into a heavy aggregate. The heavy uranium aggregate is combined with conventional concrete materials to form an ultra high density concrete, DUCRETE, weighing more than 400 lb/ft{sup 3}. DUCRETE can be used as shielding in spent nuclear fuel/high-level waste casks at a cost comparable to the lower of the disposal cost estimates. Consequently, the case can be made that DUCRETE shielded casks are an alternative to disposal. In this case, a beneficial long term solution is attained for much less than the combined cost of independently providing shielded casks and disposing of the depleted uranium. Furthermore, if disposal is avoided, the political problems associated with selection of a disposal location are also avoided. Other studies have also shown cost benefits for low level waste shielded disposal containers.

  13. Comparison of defects in crystalline oxide semiconductor materials by electron spin resonance

    SciTech Connect

    Matsuda, Tokiyoshi Kimura, Mutsumi

    2015-03-15

    Defects in crystalline InGaZnO{sub 4} (IGZO) induced by plasma were investigated using electron spin resonance (ESR). Thermal stabilities and g factors of two ESR signals (A and B observed at g = 1.939 and 2.003, respectively) in IGZO were different from those of the ESR signals observed in component materials such as Ga{sub 2}O{sub 3} (signal observed at g = 1.969), In{sub 2}O{sub 3} (no signal), and ZnO (signal observed at g = 1.957). Signal A in IGZO increased upon annealing at 300 °C for 1 h, but decreased when annealing was continued for more than 2 h. On the other hand, signal B decreased upon annealing at 300 °C for 1 h. The ESR signal in ZnO decayed in accordance with a second-order decay model with a rate constant of 2.1 × 10{sup −4} s{sup −1}; however, this phenomenon was not observed in other materials. This difference might have been due to randomly formed IGZO lattices such as asymmetrical (Ga, Zn)O and In-O layers. Defects in signals A and B in IGZO were formed in trap states (at the deep level) and tail states, respectively.

  14. Fabrication of Smart Chemical Sensors Based on Transition-Doped-Semiconductor Nanostructure Materials with µ-Chips

    PubMed Central

    Rahman, Mohammed M.; Khan, Sher Bahadar; Asiri, Abdullah M.

    2014-01-01

    Transition metal doped semiconductor nanostructure materials (Sb2O3 doped ZnO microflowers, MFs) are deposited onto tiny µ-chip (surface area, ∼0.02217 cm2) to fabricate a smart chemical sensor for toxic ethanol in phosphate buffer solution (0.1 M PBS). The fabricated chemi-sensor is also exhibited higher sensitivity, large-dynamic concentration ranges, long-term stability, and improved electrochemical performances towards ethanol. The calibration plot is linear (r2 = 0.9989) over the large ethanol concentration ranges (0.17 mM to 0.85 M). The sensitivity and detection limit is ∼5.845 µAcm−2mM−1 and ∼0.11±0.02 mM (signal-to-noise ratio, at a SNR of 3) respectively. Here, doped MFs are prepared by a wet-chemical process using reducing agents in alkaline medium, which characterized by UV/vis., FT-IR, Raman, X-ray photoelectron spectroscopy (XPS), powder X-ray diffraction (XRD), and field-emission scanning electron microscopy (FE-SEM) etc. The fabricated ethanol chemical sensor using Sb2O3-ZnO MFs is simple, reliable, low-sample volume (<70.0 µL), easy of integration, high sensitivity, and excellent stability for the fabrication of efficient I–V sensors on μ-chips. PMID:24454785

  15. Experiment requirements and implementation plan (Erip) for semiconductor materials growth in low-G environment

    NASA Technical Reports Server (NTRS)

    Crouch, R. K.; Fripp, A. L.; Debnam, W. J.; Clark, I. O.

    1983-01-01

    The MEA-2 A facility was used to test the effect of the low gravity environment on suppressing convective mixing in the growth of Pb(1-x)Sn(x)Te crystals. The need to eliminate convection, the furnace characteristics and operation that will be required for successful experimental implementation, and to the level that is presently known, the measured physical properties of the Pb(1-x)Sn(x)Te system were discussed. In addition, a brief background of the present and potential utilization of Pb(1-x)Sn(x)Te is given. Additional experiments are anticipated in future MEA-A, improved MEA and other dedicated materials processing in space flight apparatus.

  16. Growth of High Material Quality Group III-Antimonide Semiconductor Nanowires by a Naturally Cooling Process

    NASA Astrophysics Data System (ADS)

    Li, Kan; Pan, Wei; Wang, Jingyun; Pan, Huayong; Huang, Shaoyun; Xing, Yingjie; Xu, H. Q.

    2016-04-01

    We report on a simple but powerful approach to grow high material quality InSb and GaSb nanowires in a commonly used tube furnace setup. The approach employs a process of stable heating at a high temperature and then cooling down naturally to room temperature with the nanowire growth occurred effectively during the naturally cooling step. As-grown nanowires are analyzed using a scanning electron microscope and a transmission electron microscope equipped with an energy-dispersive X-ray spectroscopy setup. It is shown that the grown nanowires are several micrometers in lengths and are zincblende InSb and GaSb crystals. The FET devices are also fabricated with the grown nanowires and investigated. It is shown that the grown nanowires show good, desired electrical properties and should have potential applications in the future nanoelectronics and infrared optoelectronics.

  17. Growth of High Material Quality Group III-Antimonide Semiconductor Nanowires by a Naturally Cooling Process.

    PubMed

    Li, Kan; Pan, Wei; Wang, Jingyun; Pan, Huayong; Huang, Shaoyun; Xing, Yingjie; Xu, H Q

    2016-12-01

    We report on a simple but powerful approach to grow high material quality InSb and GaSb nanowires in a commonly used tube furnace setup. The approach employs a process of stable heating at a high temperature and then cooling down naturally to room temperature with the nanowire growth occurred effectively during the naturally cooling step. As-grown nanowires are analyzed using a scanning electron microscope and a transmission electron microscope equipped with an energy-dispersive X-ray spectroscopy setup. It is shown that the grown nanowires are several micrometers in lengths and are zincblende InSb and GaSb crystals. The FET devices are also fabricated with the grown nanowires and investigated. It is shown that the grown nanowires show good, desired electrical properties and should have potential applications in the future nanoelectronics and infrared optoelectronics. PMID:27112353

  18. Modification of semiconductor materials with the use of plasma produced by low intensity repetitive laser pulses

    SciTech Connect

    Wolowski, J.; Rosinski, M.; Badziak, J.; Czarnecka, A.; Parys, P.; Turan, R.; Yerci, S.

    2008-03-19

    This work reports experiments concerning specific application of laser-produced plasma at IPPLM in Warsaw. A repetitive pulse laser system of parameters: energy up to 0.8 J in a 3.5 ns-pulse, wavelength of 1.06 {mu}m, repetition rate of up to 10 Hz, has been employed in these investigations. The characterisation of laser-produced plasma was performed with the use of 'time-of-flight' ion diagnostics simultaneously with other diagnostic methods. The results of laser-matter interaction were obtained in dependence on laser pulse parameters, illumination geometry and target material. The modified SiO{sub 2} layers and sample surface properties were characterised with the use of different methods at the Middle-East Technological University in Ankara and at the Warsaw University of technology. The production of the Ge nanocrystallites has been demonstrated for annealed samples prepared in different experimental conditions.

  19. Materials and Area of Study for Advanced Placement Program in American History.

    ERIC Educational Resources Information Center

    Santos, Peter A.

    This paper describes and evaluates benefits of advanced placement programs and identifies materials which can help high school history classroom teachers develop effective advanced placement programs. An advanced placement program is defined as a program which requires a student to do extensive research and writing throughout the school year.…

  20. The Materials Data Facility: Data Services to Advance Materials Science Research

    NASA Astrophysics Data System (ADS)

    Blaiszik, B.; Chard, K.; Pruyne, J.; Ananthakrishnan, R.; Tuecke, S.; Foster, I.

    2016-07-01

    With increasingly strict data management requirements from funding agencies and institutions, expanding focus on the challenges of research replicability, and growing data sizes and heterogeneity, new data needs are emerging in the materials community. The materials data facility (MDF) operates two cloud-hosted services, data publication and data discovery, with features to promote open data sharing, self-service data publication and curation, and encourage data reuse, layered with powerful data discovery tools. The data publication service simplifies the process of copying data to a secure storage location, assigning data a citable persistent identifier, and recording custom (e.g., material, technique, or instrument specific) and automatically-extracted metadata in a registry while the data discovery service will provide advanced search capabilities (e.g., faceting, free text range querying, and full text search) against the registered data and metadata. The MDF services empower individual researchers, research projects, and institutions to (I) publish research datasets, regardless of size, from local storage, institutional data stores, or cloud storage, without involvement of third-party publishers; (II) build, share, and enforce extensible domain-specific custom metadata schemas; (III) interact with published data and metadata via representational state transfer (REST) application program interfaces (APIs) to facilitate automation, analysis, and feedback; and (IV) access a data discovery model that allows researchers to search, interrogate, and eventually build on existing published data. We describe MDF's design, current status, and future plans.

  1. Semiconductor diode laser material and devices with emission in visible region of the spectrum

    NASA Technical Reports Server (NTRS)

    Ladany, I.; Kressel, H.

    1975-01-01

    Two alloy systems, (AlGa)As and (InGa)P, were studied for their properties relevant to obtaining laser diode operation in the visible region of the spectrum. (AlGa)As was prepared by liquid-phase epitaxy (LPE) and (InGa)P was prepared both by vapor-phase epitaxy and by liquid-phase epitaxy. Various schemes for LPE growth were applied to (InGa)P, one of which was found to be capable of producing device material. All the InGaP device work was done using vapor-phase epitaxy. The most successful devices were fabricated in (AlGa)As using heterojunction structures. At room temperature, the large optical cavity design yielded devices lasing in the red (7000 A). Because of the relatively high threshold due to the basic band structure limitation in this alloy, practical laser diode operation is presently limited to about 7300 A. At liquid-nitrogen temperature, practical continuous-wave operation was obtained at a wavelength of 6500 to 6600 A, with power emission in excess of 50 mW. The lowest pulsed lasing wavelength is 6280 A. At 223 K, lasing was obtained at 6770 A, but with high threshold currents. The work dealing with CW operation at room temperature was successful with practical operation having been achieved to about 7800 A.

  2. Processing method for forming dislocation-free SOI and other materials for semiconductor use

    DOEpatents

    Holland, Orin Wayne; Thomas, Darrell Keith; Zhou, Dashun

    1997-01-01

    A method for preparing a silicon-on-insulator material having a relatively defect-free Si overlayer involves the implanting of oxygen ions within a silicon body and the interruption of the oxygen-implanting step to implant Si ions within the silicon body. The implanting of the oxygen ions develops an oxide layer beneath the surface of the silicon body, and the Si ions introduced by the Si ion-implanting step relieves strain which is developed in the Si overlayer during the implanting step without the need for any intervening annealing step. By relieving the strain in this manner, the likelihood of the formation of strain-induced defects in the Si overlayer is reduced. In addition, the method can be carried out at lower processing temperatures than have heretofore been used with SIMOX processes of the prior art. The principles of the invention can also be used to relieve negative strain which has been induced in a silicon body of relatively ordered lattice structure.

  3. Analysis of the influence of advanced materials for aerospace products R&D and manufacturing cost

    NASA Astrophysics Data System (ADS)

    Shen, A. W.; Guo, J. L.; Wang, Z. J.

    2015-12-01

    In this paper, we pointed out the deficiency of traditional cost estimation model about aerospace products Research & Development (R&D) and manufacturing based on analyzing the widely use of advanced materials in aviation products. Then we put up with the estimating formulas of cost factor, which representing the influences of advanced materials on the labor cost rate and manufacturing materials cost rate. The values ranges of the common advanced materials such as composite materials, titanium alloy are present in the labor and materials two aspects. Finally, we estimate the R&D and manufacturing cost of F/A-18, F/A- 22, B-1B and B-2 aircraft based on the common DAPCA IV model and the modified model proposed by this paper. The calculation results show that the calculation precision improved greatly by the proposed method which considering advanced materials. So we can know the proposed method is scientific and reasonable.

  4. ADVANCED CERAMIC MATERIALS FOR NEXT-GENERATION NUCLEAR APPLICATIONS

    SciTech Connect

    Marra, J.

    2010-09-29

    proliferation), the worldwide community is working to develop and deploy new nuclear energy systems and advanced fuel cycles. These new nuclear systems address the key challenges and include: (1) extracting the full energy value of the nuclear fuel; (2) creating waste solutions with improved long term safety; (3) minimizing the potential for the misuse of the technology and materials for weapons; (4) continually improving the safety of nuclear energy systems; and (5) keeping the cost of energy affordable.

  5. Cost/benefit analysis of advanced materials technologies for future aircraft turbine engines

    NASA Technical Reports Server (NTRS)

    Bisset, J. W.

    1976-01-01

    The cost/benefits of advance commercial gas turbine materials are described. Development costs, estimated payoffs and probabilities of success are discussed. The materials technologies investigated are: (1) single crystal turbine blades, (2) high strength hot isostatic pressed turbine disk, (3) advanced oxide dispersion strengthened burner liner, (4) bore entry cooled hot isostatic pressed turbine disk, (5) turbine blade tip - outer airseal system, and (6) advance turbine blade alloys.

  6. Validation of an Advanced Material Model for Simulating the Impact and Shock Response of Composite Materials

    NASA Astrophysics Data System (ADS)

    Clegg, Richard A.; Hayhurst, Colin J.; Nahme, Hartwig

    2001-06-01

    Validation of an advanced continuum based numerical model for the simulation of the shock response of composite materials during high rate transient dynamic loading is described. The constitutive model, implemented in AUTODYN-2D and 3D, allows for the representation of non-linear shock effects in combination with orthotropic stiffness and damage. Simulations of uniaxial flyer plate experiments on aramid and polyethylene fibre composite systems are presented and compared with experiment. The continuum model is shown to reproduce well the experimental VISAR velocity traces at the rear surface of the targets. Finally, practical application of the model as implemented in AUTODYN is demonstrated through the simulation of ballistic and hypervelocity impact events. Comparison with experiment is given where possible.

  7. Prediction of Corrosion of Advanced Materials and Fabricated Components

    SciTech Connect

    A. Anderko; G. Engelhardt; M.M. Lencka; M.A. Jakab; G. Tormoen; N. Sridhar

    2007-09-29

    The goal of this project is to provide materials engineers, chemical engineers and plant operators with a software tool that will enable them to predict localized corrosion of process equipment including fabricated components as well as base alloys. For design and revamp purposes, the software predicts the occurrence of localized corrosion as a function of environment chemistry and assists the user in selecting the optimum alloy for a given environment. For the operation of existing plants, the software enables the users to predict the remaining life of equipment and help in scheduling maintenance activities. This project combined fundamental understanding of mechanisms of corrosion with focused experimental results to predict the corrosion of advanced, base or fabricated, alloys in real-world environments encountered in the chemical industry. At the heart of this approach is the development of models that predict the fundamental parameters that control the occurrence of localized corrosion as a function of environmental conditions and alloy composition. The fundamental parameters that dictate the occurrence of localized corrosion are the corrosion and repassivation potentials. The program team, OLI Systems and Southwest Research Institute, has developed theoretical models for these parameters. These theoretical models have been applied to predict the occurrence of localized corrosion of base materials and heat-treated components in a variety of environments containing aggressive and non-aggressive species. As a result of this project, a comprehensive model has been established and extensively verified for predicting the occurrence of localized corrosion as a function of environment chemistry and temperature by calculating the corrosion and repassivation potentials.To support and calibrate the model, an experimental database has been developed to elucidate (1) the effects of various inhibiting species as well as aggressive species on localized corrosion of nickel

  8. Implications of the Differential Toxicological Effects of III-V Ionic and Particulate Materials for Hazard Assessment of Semiconductor Slurries.

    PubMed

    Jiang, Wen; Lin, Sijie; Chang, Chong Hyun; Ji, Zhaoxia; Sun, Bingbing; Wang, Xiang; Li, Ruibin; Pon, Nanetta; Xia, Tian; Nel, André E

    2015-12-22

    Because of tunable band gaps, high carrier mobility, and low-energy consumption rates, III-V materials are attractive for use in semiconductor wafers. However, these wafers require chemical mechanical planarization (CMP) for polishing, which leads to the generation of large quantities of hazardous waste including particulate and ionic III-V debris. Although the toxic effects of micron-sized III-V materials have been studied in vivo, no comprehensive assessment has been undertaken to elucidate the hazardous effects of submicron particulates and released III-V ionic components. Since III-V materials may contribute disproportionately to the hazard of CMP slurries, we obtained GaP, InP, GaAs, and InAs as micron- (0.2-3 μm) and nanoscale (<100 nm) particles for comparative studies of their cytotoxic potential in macrophage (THP-1) and lung epithelial (BEAS-2B) cell lines. We found that nanosized III-V arsenides, including GaAs and InAs, could induce significantly more cytotoxicity over a 24-72 h observation period. In contrast, GaP and InP particulates of all sizes as well as ionic GaCl3 and InCl3 were substantially less hazardous. The principal mechanism of III-V arsenide nanoparticle toxicity is dissolution and shedding of toxic As(III) and, to a lesser extent, As(V) ions. GaAs dissolves in the cell culture medium as well as in acidifying intracellular compartments, while InAs dissolves (more slowly) inside cells. Chelation of released As by 2,3-dimercapto-1-propanesulfonic acid interfered in GaAs toxicity. Collectively, these results demonstrate that III-V arsenides, GaAs and InAs nanoparticles, contribute in a major way to the toxicity of III-V materials that could appear in slurries. This finding is of importance for considering how to deal with the hazard potential of CMP slurries. PMID:26549624

  9. Advanced characterization of hysteretic materials by object-oriented software

    NASA Astrophysics Data System (ADS)

    Ionita, V.; Gavrila, H.

    2002-04-01

    A new object-oriented software, which is dedicated for the characterization of magnetic materials, including the hysteresis effect, is presented. The product allows the development and utilization of an information base, containing experimental and numerical data related to the magnetic material behaviour. The materials may be modelled with different hysteresis models (Preisach, Jiles-Atherton, etc.).

  10. A study of the photocatalytic effects of aqueous suspensions of platinized semiconductor materials on the reaction rates of candidate redox reactions

    NASA Technical Reports Server (NTRS)

    Miles, A. M.

    1982-01-01

    The effectiveness of powdered semiconductor materials in photocatalyzing candidate redox reactions was investigated. The rate of the photocatalyzed oxidation of cyanide at platinized TiO2 was studied. The extent of the cyanide reaction was followed directly using an electroanalytical method (i.e. differential pulse polarography). Experiments were performed in natural or artificial light. A comparison was made of kinetic data obtained for photocatalysis at platinized powders with rate data for nonplatinized powders.

  11. Advances in Materials Science for Environmental and Energy Technologies II

    SciTech Connect

    Matyas, Dr Josef; Ohji, Tatsuki; Liu, Xingbo; Paranthaman, Mariappan Parans; Devanathan, Ram; Fox, Kevin; Singh, Mrityunjay; Wong-ng, Winnie

    2013-01-01

    The Materials Science and Technology 2012 Conference and Exhibition (MS&T'12) was held October 7-11, 2012, in Pittsburgh, Pennsylvania. One of the major themes of the conference was Environmental and Energy Issues. Papers from five of the symposia held under that theme are invluded in this volume. These symposia included Materials Issues in Nuclear Waste Management for the 21st Century; Green Technologies for Materials Manufacturing and Processing IV; Energy Storage: Materials, Systems and Applications; Energy Conversion-Photovoltaic, Concentraing Solar Power and Thermoelectric; and Materials Development for Nuclear Applications and Extreme Environments.

  12. Part A - Advanced turbine systems. Part B - Materials/manufacturing element of the Advanced Turbine Systems Program

    SciTech Connect

    Karnitz, M.A.

    1996-06-01

    The DOE Offices of Fossil Energy and Energy Efficiency and Renewable Energy have initiated a program to develop advanced turbine systems for power generation. The objective of the Advanced Turbine Systems (ATS) Program is to develop ultra-high efficiency, environmentally superior, and cost competitive gas turbine systems for utility and industrial applications. One of the supporting elements of the ATS Program is the Materials/Manufacturing Technologies Task. The objective of this element is to address the critical materials and manufacturing issues for both industrial and utility gas turbines.

  13. Density functional theory based tight binding study on theoretical prediction of low-density nanoporous phases ZnO semiconductor materials

    NASA Astrophysics Data System (ADS)

    Tuoc, Vu Ngoc; Doan Huan, Tran; Viet Minh, Nguyen; Thi Thao, Nguyen

    2016-06-01

    Polymorphs or phases - different inorganic solids structures of the same composition usually have widely differing properties and applications, thereby synthesizing or predicting new classes of polymorphs for a certain compound is of great significance and has been gaining considerable interest. Herein, we perform a density functional theory based tight binding (DFTB) study on theoretical prediction of several new phases series of II-VI semiconductor material ZnO nanoporous phases from their bottom-up building blocks. Among these, three phases are reported for the first time, which could greatly expand the family of II- VI compound nanoporous phases. We also show that all these generally can be categorized similarly to the aluminosilicate zeolites inorganic open-framework materials. The hollow cage structure of the corresponding building block ZnkOk (k= 9, 12, 16) is well preserved in all of them, which leads to their low-density nanoporous and high flexibility. Additionally the electronic wide-energy gap of the individual ZnkOk is also retained. Our study reveals that they are all semiconductor materials with a large band gap. Further, this study is likely to be the common for II-VI semiconductor compounds and will be helpful for extending their range of properties and applications.

  14. Characterization and development of materials for advanced textile composites

    NASA Technical Reports Server (NTRS)

    Hartness, J. Timothy; Greene, Timothy L.; Taske, Leo E.

    1993-01-01

    Work ongoing under the NASA Langley - Advanced Composite Technology (ACT) program is discussed. The primary emphasis of the work centers around the development and characterization of graphite fiber that has been impregnated with an epoxy powder. Four epoxies have been characterized in towpreg form as to their weaveability and braidability. Initial mechanical properties have been generated on each resin system. These include unidirectional as well as 8-harness satin cloth. Initial 2D and 3D weaving and braiding trials will be reported on as well as initial efforts to develop towpreg suitable for advanced tow placement.

  15. Semiconductor nanowire optical antenna solar absorbers.

    PubMed

    Cao, Linyou; Fan, Pengyu; Vasudev, Alok P; White, Justin S; Yu, Zongfu; Cai, Wenshan; Schuller, Jon A; Fan, Shanhui; Brongersma, Mark L

    2010-02-10

    Photovoltaic (PV) cells can serve as a virtually unlimited clean source of energy by converting sunlight into electrical power. Their importance is reflected in the tireless efforts that have been devoted to improving the electrical and structural properties of PV materials. More recently, photon management (PM) has emerged as a powerful additional means to boost energy conversion efficiencies. Here, we demonstrate an entirely new PM strategy that capitalizes on strong broad band optical antenna effects in one-dimensional semiconductor nanostructures to dramatically enhance absorption of sunlight. We show that the absorption of sunlight in Si nanowires (Si NWs) can be significantly enhanced over the bulk. The NW's optical properties also naturally give rise to an improved angular response. We propose that by patterning the silicon layer in a thin film PV cell into an array of NWs, one can boost the absorption for solar radiation by 25% while utilizing less than half of the semiconductor material (250% increase in the light absorption per unit volume of material). These results significantly advance our understanding of the way sunlight is absorbed by one-dimensional semiconductor nanostructures and provide a clear, intuitive guidance for the design of efficient NW solar cells. The presented approach is universal to any semiconductor and a wide range of nanostructures; as such, it provides a new PV platform technology. PMID:20078065

  16. Bricklaying Curriculum: Advanced Bricklaying Techniques. Instructional Materials. Revised.

    ERIC Educational Resources Information Center

    Turcotte, Raymond J.; Hendrix, Laborn J.

    This curriculum guide is designed to assist bricklaying instructors in providing performance-based instruction in advanced bricklaying. Included in the first section of the guide are units on customized or architectural masonry units; glass block; sills, lintels, and copings; and control (expansion) joints. The next two units deal with cut,…

  17. Advanced Industrial Materials Program. Annual progress report, FY 1993

    SciTech Connect

    Stooksbury, F.

    1994-06-01

    Mission of the AIM program is to commercialize new/improved materials and materials processing methods that will improve energy efficiency, productivity, and competitiveness. Program investigators in the DOE national laboratories are working with about 100 companies, including 15 partners in CRDAs. Work is being done on intermetallic alloys, ceramic composites, metal composites, polymers, engineered porous materials, and surface modification. The program supports other efforts in the Office of Industrial Technologies to assist the energy-consuming process industries. The aim of the AIM program is to bring materials from basic research to industrial application to strengthen the competitive position of US industry and save energy.

  18. Composite magnetostrictive materials for advanced automotive magnetomechanical sensors

    NASA Astrophysics Data System (ADS)

    McCallum, R. W.; Dennis, K. W.; Jiles, D. C.; Snyder, J. E.; Chen, Y. H.

    2001-04-01

    In this paper we present the development of a composite magnetostrictive material for automotive applications. The material is based on cobalt ferrite, CoOṡFe2O3, and contains a small fraction of metallic matrix phase that serves both as a liquid-phase sintering aid during processing and enhances the mechanical properties over those of a simple sintered ferrite ceramic. In addition the metal matrix makes it possible to braze the material, making the assembly of a sensor relatively simple. The material exhibits good sensitivity and should have high corrosion resistance, while at the same time it is low in cost.

  19. Creep and fatigue research efforts on advanced materials

    NASA Technical Reports Server (NTRS)

    Gayda, John

    1987-01-01

    Two of the more important materials problems encountered in turbine blades of aircraft engines are creep and fatigue. To withstand these high-temperature phenomena modern engines utilize single-crystal, nickel-based superalloys as the material of choice in critical applications. Recent research activities at Lewis on single-crystal blading material as well as future research initiatives on metal matrix composites related to creep and fatigue are discussed. The goal of these research efforts is improving the understanding of microstructure-property relationships and thereby guide material development.

  20. Creep and fatigue research efforts on advanced materials

    NASA Technical Reports Server (NTRS)

    Gayda, John

    1990-01-01

    Two of the more important materials problems encountered in turbine blades of aircraft engines are creep and fatigue. To withstand these high-temperature phenomena, modern engines utilize single-crystal, nickel-base superalloys as the material of choice in critical applications. This paper will present recent research activities at NASA's Lewis Research Center on single-crystal blading material, related to creep and fatique. The goal of these research efforts is to improve the understanding of microstructure-property relationships and thereby guide material development.