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Sample records for ag cd hg

  1. Biological interaction between transition metals (Ag, Cd and Hg), selenide/sulfide and selenoprotein P.

    PubMed

    Sasakura, C; Suzuki, K T

    1998-09-01

    The interaction between transition metals (Ag+, Cd2+ and Hg2+) and selenium (Se) in the bloodstream was studied in vitro by means of the HPLC--inductively coupled argon plasma-mass spectrometry (ICP MS) method. Transition metal ions and selenide (produced in vitro from selenite in the presence of glutathione) or sulfide (Na2S) formed a (metal-Se/S) complex, which then bound to a plasma protein, selenoprotein P (Sel P), to form a ternary complex, (metal-Se/S)-Sel P. The molar ratios of metals to Se were 1:1 for Hg/Se and Cd/Se, but either 1:1 or 2:1 for Ag/Se, depending on the ratio of their doses. The results indicate that the interaction between transition metals and Se occurs through the general mechanism, i.e., transition metal ions and selenide form the unit complex (metal-Se)n, and then the complex binds to selenoprotein P to form the ternary complex ¿(metal-Se)n¿m--seleno-protein P in the bloodstream. PMID:9833321

  2. Particulate contacts to Si and CdTe: Al, Ag, Hg-Cu-Te, and Sb-Te

    NASA Astrophysics Data System (ADS)

    Schulz, Douglas L.; Ribelin, Rosine; Curtis, Calvin J.; Ginley, David S.

    1999-03-01

    Our team has been investigating the use of particle-based contacts in both Si and CdTe solar cell technologies. First, in the area of contacts to Si, powders of Al and Ag prepared by an electroexplosion process have been characterized by transmission electron microscopy (TEM), TEM elemental determination X-ray spectroscopy (TEM-EDS), and TEM electron diffraction (TEM-ED). These Al and Ag particles were slurried and tested as contacts to p- and n-type silicon wafers, respectively. Linear current-voltage (I-V) was observed for Ag on n-type Si, indicative of an ohmic contact, whereas the Al on p-type Si sample was non-ideal. A wet-chemical surface treatment was performed on one Al sample and TEM-EDS indicated a substantial decrease in the O contaminant level. The treated Al on p-type Si films exhibited linear I-V after annealing. Second, in the area of contacts to CdTe, particles of Hg-Cu-Te and Sb-Te have been applied as contacts to CdTe/CdS/SnO2 heterostructures prepared by the standard NREL protocol. First, Hg-Cu-Te and Sb-Te were prepared by a metathesis reaction. After CdCl2 treatment and NP etch of the CdTe layer, particle contacts were applied. The Hg-Cu-Te contacted cells exhibited good electrical characteristics, with Voc>810 mV and efficiencies > 11.5% for most cells. Although Voc>800 mV were observed for the Sb-Te contacted cells, efficiencies in these devices were limited to 9.1% presumably by a large series resistance (>20 Ω) observed in all samples.

  3. Physiological characterization of Chlamydomonas reinhardtii acclimated to chronic stress induced by Ag, Cd, Cr, Cu and Hg ions.

    PubMed

    Nowicka, Beatrycze; Pluciński, Bartosz; Kuczyńska, Paulina; Kruk, Jerzy

    2016-08-01

    Acclimation to heavy metal-induced stress is a complex phenomenon. Among the mechanisms of heavy metal toxicity, an important one is the ability to induce oxidative stress, so that the antioxidant response is crucial for providing tolerance to heavy metal ions. The effect of chronic stress induced by ions of five heavy metals, Ag, Cu, Cr (redox-active metals) Cd, Hg (nonredox-active metals) on the green microalga Chlamydomonas reinhardtii was examined at two levels - the biochemical (content of photosynthetic pigments and prenyllipid antioxidants, lipid peroxidation) and the physiological (growth rate, photosynthesis and respiration rates, induction of nonphotochemical quenching of chlorophyll fluorescence). The expression of the genes which encode the enzymes participating in the detoxification of reactive oxygen species (APX1, CAT1, FSD1, MSD1) was measured. The other gene measured was one required for plastoquinone and α-tocopherol biosynthesis (VTE3). The application of heavy metal ions partly inhibited growth and biosynthesis of chlorophyll. The growth inhibition was accompanied by enhanced lipid peroxidation. An increase in the content of prenyllipid antioxidants was observed in cultures exposed to Cr2O7(2-), Cd(2+) (α- and γ-tocopherol and plastoquinone) and Cu(2+) (only tocopherols). The induction of nonphotochemical quenching was enhanced in cultures exposed to Cu(2+), Cr2O7(2-) and Cd(2+), as compared to the control. Chronic heavy metal-induced stress led to changes in gene expression dependent on the type and concentration of heavy metal ions. The up-regulation of antioxidant enzymes was usually accompanied by the up-regulation of the VTE3 gene. PMID:27104807

  4. Ion conduction in the Ag{sub 2}HgI{sub 4}-Cu{sub 2}HgI{sub 4} systems doped with Cd{sup 2+}, K{sup +}, and Na{sup +}

    SciTech Connect

    Nair, S.M.; Yahya, A.I.; Ahmad, A.

    1996-03-01

    Ion conductivities of face centered cubic Ag{sub 2}HgI{sub 4}-Cu{sub 2}HgI{sub 4} systems doped with Cd{sup 2+}, K{sup +}, and Na{sup +} were measured. In 67 mol% Ag{sub 2}HgI{sub 4} solid solution doped with Cd{sup 2+} ions, the phase transition occurs at a lower temperature than in the parent compounds and the system shows higher conductivity. The increase in conductivity is discussed in terms of vacancies produced. K{sup +} doped Ag{sub 2}HgI{sub 4} exhibits higher conductivity prior to the phase transition, which is attributed to lattice loosening. A decrease in conductivity is observed above 140{degrees}C. This is interpreted in terms of anion framework collapse. Na{sup +} doped Ag{sub 2}HgI{sub 4} shows high conductivity for the high temperature phase because of the small size of Na{sup +} ions. The activation energy for ionic motion for all the samples is calculated from the graph of log({delta}T) versus 1/T.

  5. Flowing Liquid Anode Atmospheric Pressure Glow Discharge as an Excitation Source for Optical Emission Spectrometry with the Improved Detectability of Ag, Cd, Hg, Pb, Tl, and Zn.

    PubMed

    Greda, Krzysztof; Swiderski, Krzysztof; Jamroz, Piotr; Pohl, Pawel

    2016-09-01

    A novel atmospheric pressure glow discharge generated in contact with a flowing liquid anode (FLA-APGD) was developed as the efficient excitation source for the optical emission spectrometry (OES) detection. Differences in the appearance and the electrical characteristic of the FLA-APGD and a conventional system operated with a flowing liquid cathode (FLC-APGD) were studied in detail and discussed. Under the optimal operating conditions for the FLA-APGD, the emission from the analytes (Ag, Cd, Hg, Pb, Tl, and Zn) was from 20 to 120 times higher as compared to the FLC-APGD. Limits of detections (LODs) established with a novel FLA-APGD system were on average 20 times better than those obtained for the FLC-APGD. A further improvement of the LODs was achieved by reducing the background shift interferences and, as a result, the LODs for Ag, Cd, Hg, Pb, Tl, and Zn were 0.004, 0.040, 0.70, 1.7, 0.035, and 0.45 μg L(-1), respectively. The precision of the FLA-APGD-OES method was evaluated to be within 2-5% (as the relative standard deviation of the repeated measurements). The method found its application in the determination of the content of Ag, Cd, Hg, Pb, Tl, and Zn in a certified reference material (CRM) of Lobster hepatopancreas (TORT-2), four brass samples as well as mineral water and tea leaves samples spiked with the analytes. In the case of brass samples, a reference method, i.e., inductively coupled plasma optical emission spectrometry (ICP-OES) was used. A good agreement between the results obtained with FLA-APGD-OES and the certified values for the CRM TORT-2 as well as the reference values obtained with ICP-OES for the brass samples was revealed, indicating the good accuracy of the proposed method. The recoveries obtained for the spiked samples of mineral water and tea leaves were within the range of 97.5-102%. PMID:27476678

  6. Photocatalytic removal of M(2+) (Ni(2+), Cu(2+), Zn(2+), Cd(2+), Hg(2+) and Ag(+)) over new catalyst CuCrO(2).

    PubMed

    Ketir, W; Bouguelia, A; Trari, M

    2008-10-30

    The metal ions M(2+) (Ni(2+), Cu(2+), Zn(2+), Cd(2+), Hg(2+) and Ag(+)) are potentially toxic. Their electro deposition has been carried out in aqueous air-equilibrated CuCrO(2) suspension upon visible illumination. The delafossite CuCrO(2) is p-type semiconductor characterized by a low band gap (1.28 eV) and a long-term chemical stability. The corrosion rate is found to be 10(-2) micromol m(-2)month(-1) in aqua regia. The oxide has been elaborated through nitrate route where the specific surface area is increased via the surface/bulk ratio. A correlation exists between the dark M(2+) adsorption, the redox potential of M(2+/0) couple and the conduction band of CuCrO(2) positioned at -1.06 V(SCE). Ag(+) cannot be photoreduced because of its positive potential located far above the valence band. By contrast, Zn(2+) is efficiently deposited due to the large driving force at the interface. The improved photoactivity of copper with a deposition percentage (90%) is attributed to the strong dark adsorption onto the surface catalyst. The results indicate a competitive effect with the water reduction; it has been observed that the M(2+) deposition goes parallel with the hydrogen evolution. Such behavior is attributed to the low H(2) over voltage when ultra fine aggregate of M islands are photodeposited onto CuCrO(2) substrate. PMID:18384943

  7. Syntheses, crystal structures and fluorescent properties of Cd(II), Hg(II) and Ag(I) coordination polymers constructed from 1H-1,2,4-triazole-1-acetic acid

    SciTech Connect

    Ding Degang; Xie Lixia; Fan Yaoting; Hou Hongwei; Xu Yan

    2009-06-15

    Three new d{sup 10} coordination polymers, namely [Cd(taa)Cl]{sub n}1, [Hg(taa)Cl]{sub n}2, and [Ag{sub 1.5}(taa)(NO{sub 3}){sub 0.5}]{sub n}3 (taa=1H-1,2,4-triazole-1-acatate anion) have been prepared and characterized by elemental analysis, IR, and single crystal X-ray diffraction. Compound 1 consists of two-dimensional layers constructed by carboxyl-linked helical chains, which are further linked through carboxyl group to generate a unique 3D open framework. Topological analysis reveals that the structure of 1 can be classified as an unprecedented (3,8)-connected network with the Schlaefli symbol (4.5{sup 2}){sub 2}(4{sup 2}.5{sup 8}.6{sup 14}.7{sup 3}.8). Compound 2 manifests a doubly interpenetrated decorated alpha-polonium cubic network with the Schlaefli symbol of (4{sup 10}.6{sup 2}.8{sup 3}). Compound 3 consists of 2D puckered layers made up of Ag centers and taa{sup -} bridges. In addition, all of these compounds are photoluminescent in the solid state with spectra that closely resemble those of the ligand precursor. - Graphical abstract: Three new compounds based on 1H-1,2,4-triazole-1-acetic acid and Cd(II), Hg(II) and Ag(I) salts display luminescent properties and may be potential candidates for luminescent materials.

  8. Highly luminescent Ag+ nanoclusters for Hg2+ ion detection

    NASA Astrophysics Data System (ADS)

    Yuan, Xun; Yeow, Teik Jin; Zhang, Qingbo; Lee, Jim Yang; Xie, Jianping

    2012-03-01

    A simple, low-cost and label-free Hg2+ ion sensor has been developed by using novel luminescent Ag+ nanoclusters (NCs) with an excellent optical property (quantum yield = 15%), an ultra-high ratio of active Ag+ species in the NC surface (~100%), and an ultra-short diffusion path length of Hg2+ ions to access the NC surface (~0.5 nm).A simple, low-cost and label-free Hg2+ ion sensor has been developed by using novel luminescent Ag+ nanoclusters (NCs) with an excellent optical property (quantum yield = 15%), an ultra-high ratio of active Ag+ species in the NC surface (~100%), and an ultra-short diffusion path length of Hg2+ ions to access the NC surface (~0.5 nm). Electronic supplementary information (ESI) available: Experimental details of the synthesis of b-Ag NCs; time-resolved evolution of photoemission spectra of the b-Ag NCs in toluene; photoexcitation spectrum of the b-Ag NCs in toluene; comparison of the luminescence of b-Ag NCs at different temperatures (4 and 25 °C) TEM image of the b-Ag NCs in toluene; optical properties of r-Ag NCs obtained by the reduction of b-Ag NCs in toluene; XPS spectra of b-Ag NCs, thiolate-Ag+ complexes, r-Ag NCs, and large Ag nanoparticles; TEM image of the Hg2+-Ag NCs; photostability of the b-Ag NCs; tolerance studies of the b-Ag NCs over other metal ions; tolerance studies of the b-Ag NCs over common thiol ligands (e.g., GSH) and anions; relative luminescence of the b-Ag NCs in different real water samples in the presence of Hg2+ ions; and relative luminescence of the b-Ag NCs in NaCl solution with different concentrations. See DOI: 10.1039/c2nr11999d

  9. HgCdTe barrier infrared detectors

    NASA Astrophysics Data System (ADS)

    Kopytko, M.; Rogalski, A.

    2016-05-01

    In the last decade, new strategies to achieve high-operating temperature (HOT) detectors have been proposed, including barrier structures such as nBn devices, unipolar barrier photodiodes, and multistage (cascade) infrared detectors. The ability to tune the positions of the conduction and valence band edges independently in a broken-gap type-II superlattices is especially helpful in the design of unipolar barriers. This idea has been also implemented in HgCdTe ternary material system. However, the implementation of this detector structure in HgCdTe material system is not straightforward due to the existence of a valence band discontinuity (barrier) at the absorber-barrier interface. In this paper we present status of HgCdTe barrier detectors with emphasis on technological progress in fabrication of MOCVD-grown HgCdTe barrier detectors achieved recently at the Institute of Applied Physics, Military University of Technology. Their performance is comparable with state-of-the-art of HgCdTe photodiodes. From the perspective of device fabrication their important technological advantage results from less stringent surface passivation requirements and tolerance to threading dislocations.

  10. MBE HgCdTe heterostructure detectors

    NASA Technical Reports Server (NTRS)

    Schulman, Joel N.; Wu, Owen K.

    1990-01-01

    HgCdTe has been the mainstay for medium (3 to 5 micron) and long (10 to 14 micron) wavelength infrared detectors in recent years. Conventional growth and processing techniques are continuing to improve the material. However, the additional ability to tailor composition and placement of doped layers on the tens of angstroms scale using molecular beam epitaxy (MBE) provides the opportunity for new device physics and concepts to be utilized. MBE-based device structures to be discussed here can be grouped into two categories: tailored conventional structures and quantum structures. The tailored conventional structures are improvements on familiar devices, but make use of the ability to create layers of varying composition, and thus band gap, at will. The heterostructure junction can be positioned independently of doping p-n junctions. This allows the small band gap region in which the absorption occurs to be separated from a larger band gap region in which the electric field is large and where unwanted tunneling can occur. Data from hybrid MBE/liquid phase epitaxy (LPE)/bulk structures are given. Quantum structures include the HgTe-CdTe superlattice, in which the band gap and transport can be controlled by alternating thin layers (tens of angstroms thick) of HgTe and CdTe. The superlattice has been shown to exhibit behavior which is non-alloy like, including very high hole mobilities, two-dimensional structure in the absorption coefficient, resonant tunneling, and anisotropic transport.

  11. Syntheses, crystal structures and fluorescent properties of Cd(II), Hg(II) and Ag(I) coordination polymers constructed from 1H-1,2,4-triazole-1-acetic acid

    NASA Astrophysics Data System (ADS)

    Ding, De-Gang; Xie, Li-Xia; Fan, Yao-Ting; Hou, Hong-Wei; Xu, Yan

    2009-06-01

    Three new d10 coordination polymers, namely [Cd(taa)Cl] n1, [Hg(taa)Cl] n2, and [Ag 1.5(taa)(NO 3) 0.5] n3 (taa=1H-1,2,4-triazole-1-acatate anion) have been prepared and characterized by elemental analysis, IR, and single crystal X-ray diffraction. Compound 1 consists of two-dimensional layers constructed by carboxyl-linked helical chains, which are further linked through carboxyl group to generate a unique 3D open framework. Topological analysis reveals that the structure of 1 can be classified as an unprecedented (3,8)-connected network with the Schläfli symbol (4.5 2) 2(4 2.5 8.6 14.7 3.8). Compound 2 manifests a doubly interpenetrated decorated α-polonium cubic network with the Schläfli symbol of (4 10.6 2.8 3). Compound 3 consists of 2D puckered layers made up of Ag centers and taa - bridges. In addition, all of these compounds are photoluminescent in the solid state with spectra that closely resemble those of the ligand precursor.

  12. Allyl- iso-propyltelluride, a new MOVPE precursor for CdTe, HgTe and (Hg,Cd)Te

    NASA Astrophysics Data System (ADS)

    Hails, Janet E.; Cole-Hamilton, David J.; Stevenson, John; Bell, William

    2000-06-01

    The use of allyl- iso-propyltelluride as the tellurium precursor for the growth of CdTe, HgTe and (Hg,Cd)Te by metal organic vapour-phase epitaxy has been investigated. It has proved to be an efficient source of tellurium with growth rates for HgTe and (Hg,Cd)Te of up to 10 μm h -1 at 300°C. The best CdTe was grown at 4.5 μm h -1 under Me 2Cd-rich conditions at 300°C in the presence of Hg vapour.

  13. Dopants in HgCdTe

    SciTech Connect

    Berding, M.A.; Sher, A.

    1998-12-31

    In this paper the authors discuss the ab initio calculations of native point defect and impurity densities in HgCdTe. Their calculations have explained the experimental finding in general, and in particular have explained the in-active incorporation of the group 7 elements under mercury-deficient conditions; have shown that the group 1 elements have a large fraction of interstitial incorporation, thereby explaining their fast diffusion; and have described a microscopic mechanism for the amphoteric behavior of the group 5 elements. They discuss the trends found among the compounds in terms of the underlying bond strengths to understand why the various elements behave the way they do.

  14. Status of LWIR HgCdTe infrared detector technology

    NASA Technical Reports Server (NTRS)

    Reine, M. B.

    1990-01-01

    The performance requirements that today's advanced Long Wavelength Infrared (LWIR) focal plane arrays place on the HgCdTe photovoltaic detector array are summarized. The theoretical performance limits for intrinsic LWIR HgCdTe detectors are reviewed as functions of cutoff wavelength and operating temperature. The status of LWIR HgCdTe photovoltaic detectors is reviewed and compared to the focal plane array (FPA) requirements and to the theoretical limits. Emphasis is placed on recent data for two-layer HgCdTe PLE heterojunction photodiodes grown at Loral with cutoff wavelengths ranging between 10 and 19 microns at temperatures of 70 to 80 K. Development trends in LWIR HgCdTe detector technology are outlined, and conclusions are drawn about the ability for photovoltaic HgCdTe detector arrays to satisfy a wide variety of advanced FPA array applications.

  15. Multilayered (Hg,Cd)Te infrared detector

    NASA Technical Reports Server (NTRS)

    Rae, W. G.

    1977-01-01

    Multilayered mercury-cadmium telluride photoconductive detectors were developed which are capable of providing individual coverage of three separate spectral wavelength bands without the use of beam splitters. The multilayered "three-color" detector on a single dewar takes the place of three separate detector/filter/dewar units and enables simpler and more reliable mechanical and optical designs for multispectral scanners and radiometers. Wavelength channel design goals (in micrometers) were: 10.1 to 11.0, 11.0 to 12.0, and 13.0. Detectivity for all channels was 1 x 10 to the 10th power cm-Hz 1/2/Watt. A problem occurred in finding an epoxy layer which had good infrared transmission properties and which also was chemically and mechanically compatible with HgCdTe processing techniques. Data on 6 candidate bonding materials are surveyed and discussed.

  16. Cd and Hg ions stimulate cell membrane potassium conductance

    SciTech Connect

    Jungwirth, A.; Paulmichl, M.; Lang, F. )

    1989-02-09

    Intracellular microelectrodes have been applied to study the effect of cadmium (Cd) and mercury (Hg) ions on cultured renal epitheloid Madin Darby Canine Kidney (MDCK) cells. Within 10 seconds Cd and within 50 seconds Hg hyperpolarize the cell membrane from - 53 {plus minus} 1 mV to - 68 {plus minus} 1 mV and - 67 {plus minus} 1 mV, resp., increase the potassium selectivity of the cell membrane (tk) from 0.33 {plus minus} 0.02 to 0.64 {plus minus} 0.03 and 0.77 {plus minus} 0.02, resp., and reduce the apparent cell membrane resistance from 40 {plus minus} 2 MOhm to 27 {plus minus} 2 MOhm and 22 {plus minus} 2 MOhm, resp.. Thus, both, Cd and Hg hyperpolarize the cell membrane by enhancement of the potassium conductance. The concentration required to elicit half maximal hyperpolarization is some 400 nmol/1 for either, Cd or Hg. Barium (1 mmol/1) depolarizes the cell membrane to - 34 {plus minus} 1 mV and virtually abolishes tk in the absence of Cd and Hg. In the presence of barium Cd leads to a transient, Hg to a sustained reappearance of tk and hyperpolarization. Thus, the Cd induced potassium conductance is blocked by barium with delay, the Hg induced potassium conductance is insensitive to barium. Quinidine (1 mmol/1) depolarizes the cell membrane to - 3 {plus minus}1 mV and abolishes the effect of both, Cd and Hg. In the nominal absence of extracellular calcium Cd leads to transient, Hg to sustained increase of tk and hyperpolarization of the cell membrane. In conclusion, both, CD and Hg at the low concentrations encountered during Cd and Hg intoxication enhance potassium conductance of MDCK cell membranes. However, the channels activated apparently differ.

  17. Density of liquid Hg(1-x)Cd(x)Te

    NASA Technical Reports Server (NTRS)

    Chandra, D.; Holland, L. R.

    1983-01-01

    Negative thermal expansion has been established in liquid Hg(1-x)Cd(x)Te for x less than 0.2 employing a pycnometric method. Pure HgTe increases in density from its melting point at 670 C to a maximum value at 750 C, where normal thermal expansion progressively resumes. The dependence of density on temperature for liquid Hg(1-x)Cd(x)Te arises almost exclusively from the HgTe portion of the melt, while CdTe acts as a diluent. The temperature corresponding to the maximum density changes slightly with composition, increasing by about 5 C for x = 0.1.

  18. Reduced leakage currents of CdZnTe radiation detectors with HgTe/HgCdTe superlattice contacts

    NASA Astrophysics Data System (ADS)

    Chang, Y.; Grein, C. H.; Becker, C. R.; Huang, J.; Ghosh, S.; Aqariden, F.; Sivananthan, S.

    2012-10-01

    Room-temperature-operating CdZnTe radiation detectors have high energy resolution, linear energy response and are capable of operating in normal counting and spectroscopic modes, hence are highly desirable for medical diagnosis, nondestructive industrial evaluations, homeland security, counterterrorism inspections and nuclear proliferation detection to ensure national and international nuclear safety. HgTe/HgCdTe superlattices can be designed to selectively transport one carrier species while hindering transport of the other. Specifically, one designs a large carrier effective mass for undesired carriers in the electric field direction, which results in low carrier velocities, and yet a density of states for undesired carrier that is lower than that of a comparable bulk semiconductor, which results in low carrier concentrations, hence a low current density under an electric field. The opposite carrier species can be designed to have a large velocity and high density of states, hence producing a large current density. By employing HgTe/HgCdTe superlattices as contact layers intermediate between CdZnTe absorbers and metal contacts, leakage currents under high electric fields are reduced and improved x-ray and γ-ray detector performance is anticipated. Pixilated CdZnTe radiation detectors arrays were fabricated and characterized to evaluate the effectiveness of HgTe/HgCdTe superlattices in reducing leakage currents. Current-voltage characteristics show that HgTe/HgCdTe superlattice contact layers consistently result in significantly reduced leakage currents relative to detectors with only metal contacts.

  19. High speed, high performance /Hg,Cd/Te photodiode detectors.

    NASA Technical Reports Server (NTRS)

    Soderman, D. A.; Pinkston, W. H.

    1972-01-01

    The current performance of high speed photodiode detectors for the 1 to 10 micron spectral region is discussed. The (Hg,Cd)Te photodiode configuration, detector properties, integration in laser receiver modules, and frequency response are considered for near infrared and far infrared wavelengths. The recent advances in (Hg,Cd)Te material and device development are indicated by the realization not only of exceptionally high speed detectors but of detectors that exhibit excellent detectivities. The performance improves substantially when the detector is cooled. This detector junction technology has been extended to other compositions of (Hg,Cd)Te for peak spectral responses at 5 and 10 micron.

  20. Can percolation control doping, diffusion and phase segregation in (Hg,Cd)Te?

    NASA Astrophysics Data System (ADS)

    Cahen, David; Melamed, Ofer; Lubomirski, Igor

    1999-02-01

    We show that percolation can control not only diffusion in solids, but in the case of semiconductors also their electrical activity, via the doping action of the diffusing species. This occurs in (Hg 1- xCd x)Te (MCT) when xCd<0.8. The 10 7 times higher diffusivity at xCd<0.8 can be understood by realizing that the percolation threshold for an ideal FCC lattice is at 0.19. While normally Ag is a donor, it can be an acceptor by stabilizing the Hg(I) state. This is possible by interaction with 2 Hg neighbors, a process that will be favorable above the Hg percolation limit. The fast Ag diffusion also holds the clue for the occurrence of ultra-low concentration phase separation in this system, the result of a balance between elastic attraction and Coulombic repulsion between the charged dopants. Prima facie evidence for this phase separation comes from coulometric Ag titration in and out of MCT.

  1. Transient and diffusion analysis of HgCdTe

    NASA Technical Reports Server (NTRS)

    Clayton, J. C.

    1982-01-01

    Solute redistribution during directional solidification of HgCdTe is addressed. Both one-dimensional and two-dimensional models for solute redistribution are treated and model results compared to experiment. The central problem studied is the cause of radial inhomogeneities found in directionally solidified HgCdTe. A large scale gravity-driven interface instability, termed shape instability, is postulated to be the cause of radial inhomogeneities. Recommendations for future work, along with appropriate computer programs, are included.

  2. Structuring effect of heteroepitaxial CdHgTe/CdZnTe systems under irradiation with silver ions

    NASA Astrophysics Data System (ADS)

    Sizov, F. F.; Savkina, R. K.; Smirnov, A. B.; Udovytska, R. S.; Kladko, V. P.; Gudymenko, A. I.; Safryuk, N. V.; Lytvyn, O. S.

    2014-11-01

    The characteristics of a damaged layer of p-CdxHg1 - xTe/CdZnTe ( x ˜ 0.223) heterostructures after implantation by 100-keV silver ions with the implantation dose Q = 3.0 × 1013 cm-2 have been obtained using X-ray diffraction, atomic force microscopy, and electron microscopy. It has been found that, as a result of the ion implantation and subsequent annealing (75°C), a uniform array of nanostructures is formed on the surface of Hg(Cd)Te/Zn(Cd)Te samples. The X-ray diffraction patterns of the structurized Hg(Cd)Te/Zn(Cd)Te sample indicate the formation of polycrystalline Hg(Cd)Te phases of cubic structure with a composition x ˜ 0.20 and also oxide Ag2O in the subsurface (<100 nm) region of the host material. The observed effects of transformation of the defect-impurity system and structuring of the surface of the heteroepitaxial film of the low-energy-gap semiconductor have been explained using a deformation model.

  3. Dislocation reduction in HgCdTe grown on CdTe/Si

    NASA Astrophysics Data System (ADS)

    Wijewarnasuriya, Priyalal S.

    2016-05-01

    Bulk-grown CdZnTe (Zn = 3%) substrates are the natural choice for HgCdTe epitaxy since it is lattice matched to long wave LW-HgCdTe alloy. However, lack of large area CdZnTe substrates, high production costs, and more importantly, the difference in thermal expansion coefficients between CdZnTe and silicon Read out Integrated Circuits (ROIC) are some of the inherent drawbacks of CdZnTe substrates. Consequently, Hg1-xCdxTe detectors fabricated on silicon substrates are an attractive alternative. Recent developments in the molecular beam epitaxy (MBE) buffer layer growth technology on Si substrates has revolutionized the HgCdTe research and offered a new dimension to HgCdTe-based IR technology. Si substrates provide advantages in terms of relatively large area (3 to 6-inch diameter is easily obtained) compared to CZT substrate materials, durability during processing, and reliability to thermal cycling. Innovations in Si-based composite substrates made it possible to fabricate very large-format IR arrays that offer higher resolution, low-cost arrays and more dies per wafer. Between Si substrates and HgCdTe has large lattice mismatch of 19%. This leads to dislocation densities of low-107 cm-2 for optimal growth of HgCdTe on silicon-based substrates as compared to the mid-104 cm-2 dislocation density of HgCdTe grown on CdZnTe. This paper present dislocation reduction by two orders of magnitude using thermal cycle anneal under Hg environment on HgCdTe grown on Si substrates and as well as defect reduction in Cd(Se)Te buffer layers grown on Si Substrates.

  4. Crystal Growth of Solid Solution HgCdTe Alloys

    NASA Technical Reports Server (NTRS)

    Lehoczky, Sandor L.

    1997-01-01

    The growth of homogenous crystals of HgCdTe alloys is complicated by the large separation between their liquidus and solidus temperatures. Hg(1-x)Cd(x)Te is representative of several alloys which have electrical and optical properties that can be compositionally tuned for a number of applications. Limitations imposed by gravity during growth and results from growth under reduced conditions are described. The importance of residual accelerations was demonstrated by dramatic differences in compositional distribution observed for different attitudes of the space shuttle that resulted in different steady acceleration components.

  5. Electronic structures of HgTe and CdTe surfaces and HgTe/CdTe interfaces

    NASA Technical Reports Server (NTRS)

    Schick, J. T.; Bose, S. M.; Chen, A.-B.

    1989-01-01

    A Green's-function method has been used to study the surface and interface electronic structures of the II-VI compounds HgTe and CdTe. Localized surface and resonance states near the cation-terminated (100) surface of CdTe and the anion-terminated surface of HgTe have been found for the ideal surfaces. The energies and strengths of these surface states are altered by surface perturbations. The bulk states near the surface are drastically modified by the creation of the surface, but the band gaps remain unchanged. Numerical evaluation of the local densities of states at the Gamma and J points shows that, at the (100) interface of HgTe/CdTe, the previously observed surface states are no longer present. However, in the interface region, bulk states of one material penetrate some distance into the other material.

  6. Raman spectroscopic investigations of Hg-Cd-Te melts

    NASA Technical Reports Server (NTRS)

    Morrobel-Sosa, Anny

    1987-01-01

    Raman scattering measurements are reported for a series of Hg sub1-xCd subxTe (with x less than or =0.2) materials from 295 K (room temperature) to 1126K (up to and above their liquidus temperatures), and for Hg sub1-xCd subxTe (x=0.3) at 285K. The samples were contained in high-temperature optically-flat fused silica cell. Variable temperature measurements were effected in a three-zone, high-temperature furnace equipped with optical windows, and monitored externally by three independently programmable temperature controllers. All studies were made in the backscattering geometry using the 5145 A line of an Ar+ ion laser, with incident power less than 250 mW, as the excitiation source. An intensity enhancement is observed for a mode in each of the compositions studied. The frequency of this mode varies with composition, 142/cm for HgTe, and 128/cm for both the Hg sub1-xCd subxTe (x=0.053 and 0.204) samples. In addition, a shift to lower frequency as a function of temperature is observed in all samples. This shift is most prominent for the x=0.053 sample. The temperature dependence of these modes as the liquidus temperatures are achieved and surpassed for these samples is presented as being associated with a structural transition in the Hg-rich compositions of the Hg sub1-xCd subxTe series. To our knowledge, this is the first reported study of Raman scattering by phonons in the melts of these materials.

  7. Enhanced thermoelectric performance of CdO : Ag nanocomposites.

    PubMed

    Gao, Linjie; Wang, Shufang; Liu, Ran; Zha, Xinyu; Sun, Niefeng; Wang, Shujie; Wang, Jianglong; Fu, Guangsheng

    2016-07-26

    CdO : Ag nanocomposites with metallic Ag nanoparticles embedded in the polycrystalline CdO matrix were synthesized by the solid-state reaction method. The addition of Ag led to increased grain boundaries of CdO and created numerous CdO/Ag interfaces. By incorporating Ag into the CdO matrix, the power factor was increased which was probably due to the carrier energy filtering effect induced by the enhanced energy-dependent scattering of electrons. In addition, reduced thermal conductivity was also achieved by stronger phonon scattering from grain boundaries, CdO/Ag interfaces and Ag nanoparticles. These concomitant effects resulted in enhanced ZT values for all CdO : Ag nanocomposites, demonstrating that the strategy of introducing metallic Ag nanoparticles into the CdO host was very effective in optimizing the thermoelectric performance. PMID:27411573

  8. Performance and reproducibility enhancement of HgCdTe molecular beam epitaxy growth on CdZnTe substrates using interfacial HgTe/CdTe superlattice layers

    SciTech Connect

    Chang Yong; Zhao Jun; Abad, Hisham; Grein, Christoph H.; Sivananthan, Sivalingam; Aoki, Toshihiro; Smith, David J.

    2005-03-28

    Interfacial layers including HgTe/CdTe superlattices (SLs) were introduced during the molecular-beam epitaxy growth of HgCdTe on CdZnTe (211)B substrates. Transmission-electron-microscopic observations show that the SLs smooth out the substrates' surface roughness during growth, and can also bend or block threading dislocations in a way that prevents their propagation from the substrate into the functional HgCdTe epilayers. An average etch pit density value in the low-10{sup 5} cm{sup -2} range was reproducibly achieved in long wavelength HgCdTe samples, with the best value being 4x10{sup 4} cm{sup -2}. Photoconductive decay lifetime measurements give values approaching theoretical limits, as determined by the intrinsic radiative and Auger recombination mechanisms. The use of such interfacial layers thus leads to enhanced growth yields and material properties.

  9. Study of HgCdTe/CdTe interface structure grown by metal-organic chemical vapor deposition

    NASA Astrophysics Data System (ADS)

    Ma, Ke J.; Yu, Zhen Z.; Yanh, Jian R.; Shen, Shou Z.; He, Jin; Chen, Wei M.; Song, Xiangyun

    1991-11-01

    The interface of HgCdTe/CdTe thin film growth by MOCVD were investigated by high resolution electron microscope (HREM). It is shown that there is no monolayer abrupt interface between HgCdTe and CdTe films. The interface of HgCdTe/CdTe contains a lot of small and random distributed disorder regions. The disorder areas can be transformed into order one under long time electron beam irradiation.

  10. Impurity Gettering in (112)B HgCdTe/CdTe/Alternate Substrates

    NASA Astrophysics Data System (ADS)

    Benson, J. D.; Bubulac, L. O.; Lennon, C. M.; Jacobs, R. N.; Smith, P. J.; Markunas, J. K.; Jaime-Vasquez, M.; Almeida, L. A.; Stoltz, A.; Arias, J. A.; Brill, G.; Chen, Y.; Wijewarnasuriya, P. S.; Vilela, M. F.; Peterson, J.; Johnson, S. M.; Lofgreen, D. D.; Rhiger, D.; Patten, E. A.; Bangs, J.

    2013-11-01

    The crystalline structure and impurity profiles of HgCdTe/CdTe/alternate substrate (AS; Si and GaAs are possibilities) and CdTe/AS were analyzed by secondary-ion mass spectrometry, atomic force microscopy, etch pit density analysis, and scanning transmission electron microscopy. Impurities (Li, Na, and K) were shown to getter in as-grown CdTe/Si epilayers at in situ Te-stabilized thermal anneal (~500°C) interfaces. In HgCdTe/CdTe/Si epilayers, indium accumulation was observed at Te-stabilized thermal anneal interfaces. Impurity accumulation was measured at HgCdTe/CdTe and CdTe/ZnTe interfaces. Processing anneals were found to nearly eliminate the gettering effect at the in situ Te-stabilized thermal anneal interfaces. Impurities were found to redistribute to the front HgCdTe/CdTe/Si surface and p- n junction interfaces during annealing steps. We also investigated altering the in situ Te-stabilized thermal anneal process to enhance the gettering effect.

  11. Characterization of CdTe, HgTe, and Hg1-xCdxTe grown by chemical beam epitaxy

    NASA Astrophysics Data System (ADS)

    Wagner, B. K.; Rajavel, D.; Benz, R. G.; Summers, C. J.

    1991-10-01

    Detailed characterization of chemical beam epitaxially (CBE) grown CdTe and Hg1-xCdxTe layers are reported. These characterizations include photoluminescence, infrared transmission, energy dispersive x-ray analysis, and variable temperature (10-300 K) Hall effect and resistivity measurements. The results indicate that high quality HgCdTe layers can be grown by CBE.

  12. Optical properties of Hg(1-x)Cd(x)Te

    NASA Astrophysics Data System (ADS)

    Tong, Fei-Ming; Ravindra, N. M.

    1993-04-01

    Optical properties of Hg(1-x)Cd(x)Te are summarized. Based on Penn-type (1962) models, the Moss (1950) relation, and the Wemple and DiDomenico (1971) approach, calculations of energy gap, plasmon energy, Fermi energy, oscillator strength and electronic polarizability have been made. Comparisons are made with the data available in the literature. Details of the dependency of the properties on composition are presented.

  13. Microtubes and corrugations fabricated from strained ZnTe/CdHgTe/HgTe/CdHgTe heterofilms with 2D electron-hole gas in the HgTe quantum well

    NASA Astrophysics Data System (ADS)

    Mutilin, S. V.; Soots, R. A.; Vorob'ev, A. B.; Ikusov, D. G.; Mikhailov, N. N.; Prinz, V. Ya

    2014-07-01

    Variously shaped shells were fabricated from strained ZnTe/CdTe/CdHgTe/HgTe/CdHgTe heterofilms that contained a HgTe quantum well populated simultaneously with electrons and holes. The radius of curvature of formed tubes proved to be 12 µm and the period of corrugations about 20 µm. Such a curvature induces a 1.2% deformation in the HgTe layer sufficient for the occurrence of notable band-edge shifts in this layer and causes a transition of the band structure from a semiconductor to a semi-metal state. Curved HgTe-based films offer potential in studying surfaces where topological insulating states are interfaced with semiconductor states.

  14. Defect chemistry and characterization of (Hg, Cd)Te

    NASA Technical Reports Server (NTRS)

    Vydyanath, H. R.

    1981-01-01

    Single crystal samples of phosphorus doped Hg sub 0.8 Cd sub 0.2 Te were anneald at temperatures varying from 450 C to 600 C in various Hg atmospheres. The samples were quenched to room temperature from the annealing temperatures. Hall effect and mobility measurements were performed at 77 K on all these samples. The results indicate the crystals to be p type for a total phosphorus concentration of 10 to the 19th power/cu cm in all the samples. The hole concentration at 77 K increases with increasing Hg pressures at 450 C and 500 C contrary to the observation in undoped crystals. Also, at low Hg pressures the concentration of holes in the phosphorus doped crystals is lower than in the undoped crystals. The hole concentration in all the samples is lower than the intrinsic carrier concentration at the annealing temperatures. The hole mobility in the doped crystals is similar to that in the undoped crystals. A defect model according to which phosphorus behaves as a single acceptor interstitially, occupying Te lattice sites while it acts as a single donor occupying Hg lattice sites was established. Equilibrum constants established for the incorporation of all the phosphorus species explain the experimental results

  15. HgCdTe APDs for free space optical communications

    NASA Astrophysics Data System (ADS)

    Rothman, J.; Lasfargues, G.; Abergel, J.

    2015-10-01

    HgCdTe avalanche photodiode single element detectors have been developed for a large scope of photon starved applications. The present communication is dedicated to use of these detectors for free space optical communications. In this perspective we present and discuss the sensitivity and bandwidth that has been measured directly on HgCdTe APDs and on detector modules. In particular, we report on the performance of TEC cooled large area detectors with sensitive diameters ranging from 30- 200 μm, characterised by detector gains of 2- 20 V/μW and noise equivalent input power of 0.1-1 nW for bandwidths ranging from 20 to 400 MHz. One of these detectors has been used during the lunar laser communication demonstration (LLCD) and the results The perspectives for high data rate transmission is estimated from the results of impulse response measurements on HgCdTe APDs. These results indicate that bandwidths close to 10 GHz can be achieved in these devices. The associated sensitivity at an APD gain of 100 is estimated to be below 4 photons rms (NEP<10 nW) for APDs operated at 300 K.

  16. HgCdTe 256x256 NWIR FPA

    NASA Technical Reports Server (NTRS)

    Vural, Kadri; Blessinger, Michael; Chen, Jenkon; Kleinhans, William

    1989-01-01

    Researchers developed a HgCdTe 256x256 focal plane array (FPA) which operates in the 1 to 5 micron band. This is presently the largest demonstrated HgCdTe FPA. The detector material is HgCdTe on sapphire (PACE-1 technology) which has a low thermal expansion mismatch with silicon. The multiplexer is a CMOS FET-switch device processed through a commercial silicon foundry. The multiplexer input is direct injection and the charge capacity is about 2 times 10 to the 7th power electrons. The kTC limited read noise is 400 electrons. Researchers demonstrated high background imaging using the device. The broadband quantum efficiency is measured to be 59 percent. Dark currents less than 0.1 pA were measured at 77 K for detectors processed on PACE-1 material with 4.9 microns cutoff. The dark currents decrease as the temperature is lowered, and researchers are presently studying the T less than 77 K characteristics. The interconnect yield is greater than 95 percent. The devices are available for astronomical applications.

  17. Improve molecular beam epitaxy growth of HgCdTe on CdZnTe (211)B substrates using interfacial layers of HgTe/CdTe superlattices

    SciTech Connect

    Chang Yong; Grein, C. H.; Zhao, J.; Sivanathan, S.; Wang, C. Z.; Aoki, T.; Smith, David J.; Wijewarnasuriya, P. S.; Nathan, V.

    2006-12-01

    HgTe/CdTe superlattices (SLs) have been grown on CdZnTe (211)B substrates as interfacial layers to improve the reproducibility and material properties of epitaxial HgCdTe. The interfacial SL layer is found by transmission electron microscopy to be capable of smoothing out the substrate's surface roughness and to bend or block threading dislocations from propagating from the substrate into the functional HgCdTe epilayers. The best etch pit density values of 4x10{sup 4} cm{sup -2} were achieved in long-wavelength infrared HgCdTe epilayers with such interfacial layers, while typical values were in the low 10{sup 5} cm{sup -2} range. The recombination mechanisms in such layers were dominated by radiative and Auger intrinsic recombination mechanisms, whereas the contributions from the Shockley-Read-Hall mechanism become negligible, which demonstrated that the use of the SL interfacial layers was beneficial for HgCdTe growth using molecular beam epitaxy or MBE.

  18. Distribution and excretion of Cd, Hg, methyl-Hg and ZS in the predatory beetle Pterostichus niger (Coleoptera: Carabidae)

    SciTech Connect

    Lindqvist, L.; Block, M.; Tjaelve, H.

    1995-07-01

    Excretion and distribution of cadmium (Cd), and mercury (Hg), methylmercury (methyl-Hg), and zinc (Zn) were studied in the predatory beetle, Pterostichus niger. Specimens of P. niger were fed with insect larvae containing {sup 109}Cd, {sup 203}Hg, methyl-{sup 203}Hg, or {sup 65}Zn. After ingestion of the larvae, the metal contents in the beetles were measured daily for 30 d by {gamma}-spectrometry. Additional beetles were used for autoradiography 5, 15, and 19 d after ingestion of the metals. Excretion of the metals was fast during an initial interval but occurred thereafter at a slow rate. After 2 weeks, the contents of Cd and inorganic Hg had decreased to approximately 1% of the ingested amounts. For Zn and methyl-Hg, higher levels were retained in the beetles. Thus after 30 d, Zn content was 20% of the ingested amount, whereas for methyl-Hg 60% was retained in the body. Autoradiography showed high levels of all metals in the gut. For methyl-Hg, in contrast to inorganic Hg, there was also an evenly distributed labelling in most body tissues. This labelling was also seen for Zn, although at a lower lever than for methyl-Hg. Cadmium showed a localization in the integument, which was not seen for the other metals. The results show that patterns of uptake and excretion of the examined metals in P. niger vary considerably and that the distribution picture show specific features for the individual metals.

  19. MOS structures based on epitaxial HgCdTe layers

    SciTech Connect

    Antonov, V.V.; Belashov, Y.G.; Kazak, E.P.; Mezentseva, M.P.; Voitsekhovskii, A.V.

    1985-08-01

    The authors present the results of a study of the dependence of the surface photoelectromotive force at wavelengths of 3.39 and 10.6 micrometers on the field electrode for MOS structures prepared from epitaxial Hg /SUB 1-x/ Cd /SUB x/ Te layers (x=0.20-0.25). They analyze the nature of the inhomogeneities in the region near the surface of semiconducting samples prepared under various heat treatment conditions and present their findings in a series of three charts.

  20. MBE (Molecular Beam Epitaxial) growth characterization and electronic device processing of HgCdTe, HgZnTe related heterojunctions and HgCdTe-CdTe superlattices

    NASA Astrophysics Data System (ADS)

    Faurie, Jean-Pierre

    1987-06-01

    As the MBE growth technique has continued to improve for Hg(1-x)Cd(x)Te films, the prospects for films of larger area have begun to be explored. These larger area films are important for imaging arrays and will be especially vital in the future for the efficient production of Hg(1-x)Cd(x)Te material. The growth of MBE of uniform Hg(1-x)Cd(x)Te epilayer on a large substrate is very difficult to achieve because of the non-uniform distribution of the fluxes and on the non-uniform temperature of the substrate.

  1. Growth and Analysis of HgCdTe on Alternate Substrates

    NASA Astrophysics Data System (ADS)

    Benson, J. D.; Bubulac, L. O.; Smith, P. J.; Jacobs, R. N.; Markunas, J. K.; Jaime-Vasquez, M.; Almeida, L. A.; Stoltz, A.; Arias, J. M.; Brill, G.; Chen, Y.; Wijewarnasuriya, P. S.; Farrell, S.; Lee, U.

    2012-10-01

    Dislocations generated at the HgCdTe/CdTe(buffer layer) interface are demonstrated to play a significant role in influencing the crystalline characteristics of HgCdTe epilayers on alternate substrates (AS). A dislocation density >108 cm-2 is observed at the HgCdTe/CdTe interface. Networks of dislocations are generated at the HgCdTe/CdTe interface. The dislocation networks are observed to entangle. Significant dislocation reduction occurs within a few microns of the HgCdTe/CdTe interface. The reduction in dislocation density as a function of depth is enhanced by annealing. Etch pit density and x-ray diffraction full-width at half-maximum values increase as a function of the lattice mismatch between HgCdTe epilayer and the buffer layer/substrate. The experimental results suggest that only by reducing HgCdTe/CdTe lattice mismatch will the desired crystallinity be achieved for HgCdTe epilayers on AS.

  2. Thirty years of HgCdTe technology in Israel

    NASA Astrophysics Data System (ADS)

    Weiss, Eliezer

    2009-05-01

    The study of HgCdTe technology in Israel began in the mid 1970's under the leadership of the late Prof. Kidron and his group at the Technion, Israel Institute of Technology. The R&D efforts were continued by other groups at the Technion and other universities and research institutes in Israel, as well as by SCD. Many aspects of the technology of this material were studied, including both bulk crystal and epitaxial growths and microelectronic fabrication methods, with an emphasis on surface treatment and passivation. Various characterization methods were developed to study both the basic and applied material and device properties. The efforts, reviewed in this article, matured at SCD as it commercialized the HgCdTe technology, launching large-volume production lines of state-of-the-art linear and multi-linear TDI LWIR detector arrays of various sizes from 10×1 to 480×6 elements. Over the years, SCD has supplied its customers with thousands of both photoconductive (PC) and photovoltaic (PV) detectors, which are briefly presented in the paper.

  3. Advances in HgCdTe APDs and LADAR Receivers

    NASA Technical Reports Server (NTRS)

    Bailey, Steven; McKeag, William; Wang, Jinxue; Jack, Michael; Amzajerdian, Farzin

    2010-01-01

    Raytheon is developing NIR sensor chip assemblies (SCAs) for scanning and staring 3D LADAR systems. High sensitivity is obtained by integrating high performance detectors with gain i.e. APDs with very low noise Readout Integrated Circuits. Unique aspects of these designs include: independent acquisition (non-gated) of pulse returns, multiple pulse returns with both time and intensity reported to enable full 3D reconstruction of the image. Recent breakthrough in device design has resulted in HgCdTe APDs operating at 300K with essentially no excess noise to gains in excess of 100, low NEP <1nW and GHz bandwidths and have demonstrated linear mode photon counting. SCAs utilizing these high performance APDs have been integrated and demonstrated excellent spatial and range resolution enabling detailed 3D imagery both at short range and long ranges. In this presentation we will review progress in high resolution scanning, staring and ultra-high sensitivity photon counting LADAR sensors.

  4. Thermally switchable dispersions of thermochromic Ag2HgI4 nanoparticles.

    PubMed

    Schwiertz, Janine; Geist, André; Epple, Matthias

    2009-04-28

    Thermochromic Ag(2)HgI(4) nanoparticles were prepared by rapid precipitation from aqueous solution. Stable colloids were formed by coating the particles with four different polymers, respectively. The four resulting systems of functionalised Ag(2)HgI(4) nanoparticles were characterised with respect to their polymer content (elemental analysis), particle size (dynamic light scattering, scanning electron microscopy), optical properties in dispersion (UV spectroscopy), crystallinity (X-ray powder diffraction), and thermochromic transition temperature (differential scanning calorimetry) and also compared to the unfunctionalised bulk phase Ag(2)HgI(4). Stable dispersions with a reversible temperature-induced colour change from yellow to orange (T(trs) = 25-40 degrees C) were obtained. PMID:19352519

  5. A longitudinally electron-beam-pumped CdHgTe laser

    NASA Astrophysics Data System (ADS)

    Borisov, B. G.; Lavrushin, B. M.; Nasibov, A. S.; Sypchenko, M. N.; Sherman, B. L.

    1989-10-01

    Lasers have been fabricated utilizing CdHgTe/CdTe heterostructures which were grown by the liquid-phase epitaxy method. The epitaxial CdHgTe layer was the active region of the cavity and the CdTe substrate was passive. Laser action in Cd(0.65)Hg(0.35)Te was achieved at a wavelength of 1.48 micron, a temperature of 77 K, and an electron energy of 50 keV. A maximum external differential efficiency of 3.4 percent was achieved.

  6. BRIEF COMMUNICATIONS: Longitudinal electron-beam-pumped CdHgTe laser

    NASA Astrophysics Data System (ADS)

    Borisov, B. G.; Lavrushin, B. M.; Nasibov, A. S.; Sypchenko, M. N.; Sherman, B. L.

    1989-10-01

    A CdHgTe/CdTe heterostructure grown by liquid phase epitaxy was used to develop a laser. The CdHgTe epitaxial laser formed the active region whilst the CdTe substrate formed the passive part of the resonator. At an electron energy of 50 keV and a temperature of 77 K, lasing was obtained at 1.48 μm in Cd0.65Hg0.35Te. The maximum external differential efficiency was 3.4%.

  7. Phase transitions involving vacancy ordering in two metal mercuric iodides, Ag2HgI4 and Cu2HgI4

    NASA Astrophysics Data System (ADS)

    Lumsden, Mark; Steinitz, Michael; McAlduff, E. J.

    1995-06-01

    We have investigated the thermochromic order-disorder phase transitions in two superionic conducting compounds, Ag2HgI4 and Cu2HgI4, using capacitance dilatometry to determine the relative volume change, ΔV/V, at the transitions. We find an average ΔV/V of 9.6×10-3 for Ag2HgI4 at a transition temperature of 48.75 °C and an average ΔV/V of 4.0×10-3 for Cu2HgI4 at a transition temperature of 63 °C.

  8. Dislocation Analysis in (112)B HgCdTe/CdTe/Si

    NASA Astrophysics Data System (ADS)

    Benson, J. D.; Farrell, S.; Brill, G.; Chen, Y.; Wijewarnasuriya, P. S.; Bubulac, L. O.; Smith, P. J.; Jacobs, R. N.; Markunas, J. K.; Jaime-Vasquez, M.; Almeida, L. A.; Stoltz, A.; Lee, U.; Vilela, M. F.; Peterson, J.; Johnson, S. M.; Lofgreen, D. D.; Rhiger, D.; Patten, E. A.; Goetz, P. M.

    2011-08-01

    High-quality (112)B HgCdTe/Si epitaxial films with a dislocation density of ˜9 × 105 cm-2 as determined by etch pit density (EPD) measurements have been obtained by thermal cyclic annealing (TCA). The reduction of the dislocation density by TCA has led to a simple rate-equation-based model to explain the relationship between dislocation density and TCA parameters (time, temperature, and number of anneals). In this model, dislocation density reduction is based on dislocation coalescence and annihilation, assumed to be caused by dislocation motion under thermal and misfit stress. An activation energy for dislocation motion in n-type (112)B HgCdTe/Si of 0.93 ± 0.1 eV was determined. This model with no adjustable parameters was used to predict recent TCA annealing results.

  9. Oxidase-like mimic of Ag@Ag3PO4 microcubes as a smart probe for ultrasensitive and selective Hg(2+) detection.

    PubMed

    Chai, Dong-Feng; Ma, Zhuo; Qiu, Yunfeng; Lv, Yu-Guang; Liu, Hong; Song, Chao-Yu; Gao, Guang-Gang

    2016-02-21

    An oxidase-like mimic system based on facilely synthesized Ag@Ag3PO4 microcubes (Ag@Ag3PO4MCs) was designed and utilized to detect mercury ions with high selectivity and ultrasensitivity. Ag@Ag3PO4MCs with an average size of ca. 1.6 μm were synthesized by the reaction of [Ag(NH3)2](+) complex and Na2HPO4 and subsequent photoreduction under ultraviolet light. The as-prepared Ag@Ag3PO4MCs can effectively catalyze the oxidation of 3,3',5,5'-tetramethylbenzidine (TMB) and o-phenylenediamine (OPD) in the presence of dissolved oxygen in slightly acidic solution, exhibiting oxidase-like activities rather than peroxidase-like activity. Interestingly, the introduction of Ag nanoparticles (AgNPs) on the surfaces of Ag3PO4MCs can dramatically enhance the oxidase-like activities due to a synergistic effect between AgNPs and Ag3PO4MCs, as evidenced by the faster oxidation speed of TMB and OPD than that of native Ag3PO4MCs in the presence of dissolved oxygen. The enzyme kinetics can be well-explained by the Michaelis-Menten equation. As "poisoning" inhibitor, Hg(2+) ions can inhibit the enzyme reaction catalyzed by Ag3PO4MCs or Ag@Ag3PO4MCs. On the basis of this effect, a colorimetric Hg(2+) sensor was developed by the enzyme inhibition reaction of Ag3PO4MCs or Ag@Ag3PO4MCs. The excellent specific interaction of Hg-Ag or Hg(2+)-Ag(+) provides high selectivity for Hg(2+) over interfering metal ions. Meanwhile, the sensitivity of this sensor to Hg(2+) is extremely excellent with a limit of detection as low as 0.253 nM for Ag@Ag3PO4MCs. Considering the advantages of low detection limit, low cost, facile preparation, and visualization, the colorimetric Ag@Ag3PO4MCs sensor shows high promise for the testing of Hg(2+) in water samples. PMID:26763181

  10. Progress in MOCVD growth of HgCdTe epilayers for HOT infrared detectors

    NASA Astrophysics Data System (ADS)

    Kebłowski, A.; Gawron, W.; Martyniuk, P.; Stepień, D.; Kolwas, K.; Piotrowski, J.; Madejczyk, P.; Kopytko, M.; Piotrowski, A.; Rogalski, A.

    2016-05-01

    In this paper we present progress in MOCVD growth of (100) HgCdTe epilayers achieved recently at the Institute of Applied Physics, Military University of Technology and Vigo System S.A. It is shown that MOCVD technology is an excellent tool in fabrication of different HgCdTe detector structures with a wide range of composition, donor/acceptor doping and without post grown annealing. Particular progress has been achieved in the growth of (100) HgCdTe epilayers for long wavelength infrared photoconductors operated in HOT conditions. The (100) HgCdTe photoconductor optimized for 13-μm attain detectivity equal to 6.5x109 Jones and therefore outperform its (111) counterpart. The paper also presents technological progress in fabrication of MOCVD-grown (111) HgCdTe barrier detectors. The barrier device performance is comparable with state-of-the-art of HgCdTe photodiodes. The detectivity of HgCdTe detectors is close to the value marked HgCdTe photodiodes. Dark current densities are close to the values given by "Rule 07".

  11. Real-time dark-field scattering microscopic monitoring of the in situ growth of single Ag@Hg nanoalloys.

    PubMed

    Liu, Yue; Huang, Cheng Zhi

    2013-12-23

    A comprehensive understanding of the growth mechanism of nanoalloys is beneficial in designing and synthesizing nanoalloys with precisely tailored properties to extend their applications. Herein, we present the investigation in this aspect by real-time monitoring of the in situ growth of single Ag@Hg nanoalloys, through direct amalgamation of Ag nanoparticles with elemental mercury, by dark-field scattering microscopy. Four typically shaped Ag nanoparticles, such as rods, triangular bipyramids, cubes, and spheres, were used as seeds for studying the growth of Ag@Hg nanoalloys. The scattered light of Ag nanoparticles of different shapes, on exposure to the growth solution, exhibited a noticeable blue-shift followed by a red-shift, suggesting the growth of Ag@Hg nanoalloys. The formation of Ag@Hg nanoalloys was confirmed by scanning electron microscopy, high-resolution transmit electron microscopy, X-ray diffraction, energy-dispersive X-ray spectroscopy, and elemental mapping and line scanning. Further analysis of the time-dependent spectral data and morphological change of single nanoparticles during the growth led to the visual identification of the growth mechanism of single Ag@Hg nanoalloys. Three important steps were involved: first, rapid adsorption of Hg atoms onto Ag nanoparticles; second, initial diffusion of Hg atoms into Ag nanoparticles, rounding or shortening the particles; third, further diffusion of Hg atoms leading to the formation of spherical Ag@Hg nanoalloys. On the basis of these results, Ag@Hg nanoalloys with given optical properties can be synthesized. Moreover, dark-field scattering microscopy is expected to be a powerful tool used for real-time monitoring of the in situ growth of other metal nanoparticles. PMID:24279755

  12. Absolute Linearity Measurements on HgCdTe Detectors in the Infrared Region

    NASA Astrophysics Data System (ADS)

    Theocharous, Evangelos; Ishii, Juntaro; Fox, Nigel P.

    2004-07-01

    The nonlinearity characteristics of photoconductive and photovoltaic HgCdTe detectors were experimentally investigated in the infrared wavelength region by use of the National Physical Laboratory detector linearity measurement facility. The nonlinearity of photoconductive HgCdTe detectors was shown to be a function of irradiance rather than the total radiant power incident on the detector. Photoconductive HgCdTe detectors supplied by different vendors were shown to have similar linearity characteristics for wavelengths around 10 µm. However, the nonlinearity of response of a photovoltaic HgCdTe detector was shown to be significantly lower than the corresponding value for photoconductive HgCdTe detectors at the same wavelength.

  13. Heavy metal tolerance (Cr, Ag AND Hg) in bacteria isolated from sewage

    PubMed Central

    Lima de Silva, Agostinho A.; de Carvalho, Márcia A. Ribeiro; de Souza, Sérgio A. L; Dias, Patrícia M. Teixeira; da Silva Filho, Renato G.; de Meirelles Saramago, Carmen S.; de Melo Bento, Cleonice A.; Hofer, Ernesto

    2012-01-01

    Samples of sewage from a university hospital and a chemistry technical school were analysed for the percentage of bacterial tolerance to chromium (Cr), silver (Ag) and mercury (Hg). Additionally, we investigated the effect of these metals on pigmentation and on some enzymatic activities of the metal tolerant strains isolated, as well as antimicrobial resistance in some metal tolerant Enterobacteriaceae strains. Tolerance to Cr was observed mainly in Gram positive bacteria while in the case of Ag and Hg the tolerant bacteria were predominately Gram negative. Hg was the metal for which the percentage of tolerance was significantly higher, especially in samples from the hospital sewage (4.1%). Mercury also had the most discernible effect on color of the colonies. Considering the effect of metals on the respiratory enzymes, one strain of Ag-tolerant Bacillus sp. and one of Hg-tolerant P. aeruginosa were unable to produce oxidase in the presence of Ag and Hg, respectively, while the expression of gelatinase was largely inhibited in various Gram negative strains (66% by Cr). Drug resistance in Hg-tolerant Enterobacteriaceae strains isolated from the university hospital sewage was greater than 80%, with prevalence of multiple resistance, while the Ag-tolerant strains from the same source showed about 34% of resistance, with the predominance of mono-resistance. Our results showed that, despite the ability of metal tolerant strains to survive and grow in the presence of these elements, the interactions with these metals may result in metabolic or phisiological changes in this group of bacteria. PMID:24031994

  14. Heavy metal tolerance (Cr, Ag AND Hg) in bacteria isolated from sewage.

    PubMed

    Lima de Silva, Agostinho A; de Carvalho, Márcia A Ribeiro; de Souza, Sérgio A L; Dias, Patrícia M Teixeira; da Silva Filho, Renato G; de Meirelles Saramago, Carmen S; de Melo Bento, Cleonice A; Hofer, Ernesto

    2012-10-01

    Samples of sewage from a university hospital and a chemistry technical school were analysed for the percentage of bacterial tolerance to chromium (Cr), silver (Ag) and mercury (Hg). Additionally, we investigated the effect of these metals on pigmentation and on some enzymatic activities of the metal tolerant strains isolated, as well as antimicrobial resistance in some metal tolerant Enterobacteriaceae strains. Tolerance to Cr was observed mainly in Gram positive bacteria while in the case of Ag and Hg the tolerant bacteria were predominately Gram negative. Hg was the metal for which the percentage of tolerance was significantly higher, especially in samples from the hospital sewage (4.1%). Mercury also had the most discernible effect on color of the colonies. Considering the effect of metals on the respiratory enzymes, one strain of Ag-tolerant Bacillus sp. and one of Hg-tolerant P. aeruginosa were unable to produce oxidase in the presence of Ag and Hg, respectively, while the expression of gelatinase was largely inhibited in various Gram negative strains (66% by Cr). Drug resistance in Hg-tolerant Enterobacteriaceae strains isolated from the university hospital sewage was greater than 80%, with prevalence of multiple resistance, while the Ag-tolerant strains from the same source showed about 34% of resistance, with the predominance of mono-resistance. Our results showed that, despite the ability of metal tolerant strains to survive and grow in the presence of these elements, the interactions with these metals may result in metabolic or phisiological changes in this group of bacteria. PMID:24031994

  15. High performance photovoltaic infrared devices in Hg(1-x)Cd(x)Te on sapphire

    NASA Astrophysics Data System (ADS)

    Reidel, R. A.; Gertner, E. R.; Edwall, D. D.; Tennant, W. E.

    1985-01-01

    A combination of organometallic vapor phase epitaxy and liquid phase epitaxy (LPE) has been used to grow CdTe on sapphire. The resultant heterostructure has been used as a substrate for LPE growth of Hg(0.7)Cd(0.3)Te. Photodiodes in the HgCdTe show excellent properties. Typical R(0)A products are higher than a million ohms at 77 K for Hg(1-x)Cd(x)Te layers with cutoff wavelengths of 4.8-5.2 microns at 77 K. The backside-illuminated spectral response was broadband with quantum efficients typically over 80 percent (without antireflection coatings).

  16. Elastic Constants of the β1-AgCd Alloy

    NASA Astrophysics Data System (ADS)

    Matsuo, Yoshie; Makita, Tomoko; Suzuki, Toshiharu; Nagasawa, Akira

    1981-04-01

    The elastic constants of single crystal of β1-AgCd alloy with 47.9± 0.1 at.%Cd have been measured in a temperature range between 180 K and 360 K, using a ultrasonic pulse-cho overlapping method. It is found that with increasing temperature, the elastic constants CL{=}(C11+C12+2C44)/2 and C44 decrease linearly but C'{=}(C11-C12)/2 increases. In addition, this alloy shows a high elastic anisotropy in comparison with other Ag-based β1-phase alloys such as AgMg and AgZn.

  17. Raman analysis of chemical substitution of Cd atoms by Hg in CdSe quantum dots and rods

    NASA Astrophysics Data System (ADS)

    Cherevkov, Sergei A.; Baranov, Alexander V.; Ushakova, Elena V.; Litvin, Alexander P.; Fedorov, Anatoly V.; Prudnikau, Anatol V.; Artemyev, Mikhail V.

    2016-01-01

    We investigate nanocrystals of ternary compounds CdXHg1-XSe with 0CdSe-like LO and the HgSe-like TO and LO-modes. It is shown that the crystalline structure of the original CdSe NCs used for Cd/Hg substitution, either zinc blende or wurtzite, strongly affects the structural properties of the resultant CdXHg1-XSe quantum dots and rods.

  18. ROIC for HgCdTe e-APD FPA

    NASA Astrophysics Data System (ADS)

    Chen, Guoqiang; Zhang, Junling; Wang, Pan; Zhou, Jie; Gao, Lei; Ding, Ruijun

    2013-08-01

    Ultra-low light imaging and passive/active dual mode imaging require very low noise optical receivers to achieve detection of fast and weak optical signal. HgCdTe electrons initiated avalanche photodiodes (e-APDs) in linear multiplication mode is the detector of choice thanks to its high quantum efficiency, high gain at low bias, high bandwidth and low noise factor. In my work, a passive/active dual mode readout integrated circuit (ROIC) of e-APD focal plane array (FPA) is designed. Unit cell circuit architecture of ROIC includes a capacitance feedback transimpedance amplifier (CTIA) as preamplifier of ROIC, a high voltage protection module, a comparator, a Sample-Hold circuit module, and output driver stage. There is a protection module in every unit cell circuit which can avoid ROIC to be damaged from avalanche breakdown of some diodes of detector. Conventional 5V CMOS process is applied to implement the high voltage protection with the small area rather than Laterally Diffused Metal Oxide Semiconductor (LDMOS) in high voltage BCD process in the limited 100um×100um pitch area. In CTIA module, three integration capacitances are included in the CTIA module, two of them are switchable to provide different well capacity and noise. Constraints such as pixel area, stability and power lead us design toward a simple one-stage cascade operational transconductance amplifier (OTA) as pre-amplifier. High voltage protection module can protect ROIC to be damaged because of breakdown of some avalanche diodes.

  19. Intraband Luminescence from HgSe/CdS Core/Shell Quantum Dots.

    PubMed

    Deng, Zhiyou; Guyot-Sionnest, Philippe

    2016-02-23

    HgSe/CdS core/shell CQD are synthesized, and the changes in the optical absorption and luminescence are investigated. While HgSe quantum dots are naturally n-doped after synthesis, both as colloidal solutions and as films, the HgSe/CdS core/shell dots in solution lose the n-doping, as seen from the optical absorption in solution. However, n-doping is regained in films, and the intraband luminescence of the films of HgSe/CdS is greater than that of the cores. The shell also vastly improves the stability of the quantum dots films against sintering at 200 °C. After annealing at that temperature, the HgSe/CdS films retain a narrow intraband emission and sustain a higher laser power leading to brighter emission at 5 μm. PMID:26820380

  20. Mode of incorporation of phosphorus in Hg(0.8)Cd(0.2)Te

    NASA Technical Reports Server (NTRS)

    Vydyanath, H. R.; Abbott, R. C.; Nelson, D. A.

    1983-01-01

    Selim and Kroeger (1977) have studied the mode of incorporation of phosphorus in CdTe. According to their findings, phosphorus behaves amphoterically in CdTe acting as an acceptor interstitially and on Te lattice sites, and as a triple donor on Cd lattice sites. The present investigation is concerned with the role of phosphorus in Hg(0.8)Cd(0.2)Te, taking into account Hall-effect and mobility measurements on phosphorus-doped crystals quenched from a temperature in the range from 450 to 600 C subsequent to anneals in different partial pressures of Hg. It is found that the behavior of phosphorus in Hg(0.8)Cd(0.2)Te is similar to that established for CdTe, except that all the electrically active phosphorus defect centers in Hg(0.8)Cd(0.2)Te appear to be only singly ionized. At low Hg pressure, phosphorus is incorporated as a single donor occupying Hg lattice sites, and at high Hg pressure, as a single acceptor on interstitial sites and Te lattice sites.

  1. Mode of incorporation of phosphorus in Hg(0.8)Cd(0.2)Te

    NASA Astrophysics Data System (ADS)

    Vydyanath, H. R.; Abbott, R. C.; Nelson, D. A.

    1983-03-01

    Selim and Kroeger (1977) have studied the mode of incorporation of phosphorus in CdTe. According to their findings, phosphorus behaves amphoterically in CdTe acting as an acceptor interstitially and on Te lattice sites, and as a triple donor on Cd lattice sites. The present investigation is concerned with the role of phosphorus in Hg(0.8)Cd(0.2)Te, taking into account Hall-effect and mobility measurements on phosphorus-doped crystals quenched from a temperature in the range from 450 to 600 C subsequent to anneals in different partial pressures of Hg. It is found that the behavior of phosphorus in Hg(0.8)Cd(0.2)Te is similar to that established for CdTe, except that all the electrically active phosphorus defect centers in Hg(0.8)Cd(0.2)Te appear to be only singly ionized. At low Hg pressure, phosphorus is incorporated as a single donor occupying Hg lattice sites, and at high Hg pressure, as a single acceptor on interstitial sites and Te lattice sites.

  2. Ohmic Contact of Au/Mo on Hg1- x Cd x Te

    NASA Astrophysics Data System (ADS)

    Liu, Dan; Lin, Chun; Zhou, Songmin; Hu, Xiaoning

    2016-06-01

    The contact resistance between Au/Mo and HgCdTe was investigated. The influence of thermal annealing on metal-semiconductor contact on short and middle-wavelength HgCdTe is also discussed in this paper. The specific contact resistance ρ c (300 K, 80 K) of Au/Mo/HgCdTe was measured by the transmission line method. Good ohmic contacts can be formed with Au/Mo on long-wavelength infrared p-HgCdTe ( x = 0.23) with a low specific contact resistivity of 3.78E-04 Ωcm2 measured at 80 K. For the mid-wavelength infrared p-HgCdTe ( x = 0.30), the metal-semiconductor contact is ohmic, and the minimum specific contact resistivity of 7.40E-04 Ωcm2 is obtained after annealing at 120°C/10 min. The as-deposited contact between Au/Mo and the short-wavelength infrared HgCdTe ( x = 0.47) shows non-ohmic behavior. After annealing at 120°C/5 min, although the contact behavior is still a Schottky contact, the contact resistance decreases. For the n-HgCdTe ( x = 0.27), the metal-semiconductor contact is ohmic with a specific contact resistivity of 5.70E-04 Ωcm2 at 80 K.

  3. Involvement of intracellular Na^+ accumulation in Hg^{+2} or Cd^{+2} induced cytotoxicity

    NASA Astrophysics Data System (ADS)

    Pourahmad, J.; O'Brien, P. J.

    2003-05-01

    Previously we showed that hepatocyte lysis induced by Hg^{+2} or Cd^{+2} could be partly attributed to mitochondrial toxicity [1, 2]. Similar changes in Na^+ homeostasis induced when Cd^{+2} or Hg^{+2} was incubated with hepatocytes. Cd^{+2} or Hg^{+2} induced cytotoxicity were prevented by Na^+ omission from the media or by the addition of the Na^+/H^+ exchange inhibitor 5-(N, N-dimethyl)-amiloride. Furthermore the omission of CI^- from the media or 2 addition of glycine, a CI^- channel blocker also prevented Cd^{+2} or Hg^{+2} induced hepatocyte toxicity. A hypotonic media also increased Cd^{+2} or Hg^{+2} induced hepatocyte cytotoxicity. This suggests that Cd^{+2} or Hg^{+2} cytotoxicity could be partly attributed to disruption of cell volume regulation mechanisms. The increased osmotic load caused by the uncontrolled accumulation of intracellular Na^+ in Cd^{+2} or Hg^{+2} treated hepatocytes likely resulted from the activation of Na^+/H^+ exchanger and the Na^+/HCO3^- cotransporter by the acidosis and ATP depletion caused by mitochondrial toxicity.

  4. Large format MBE HgCdTe on silicon detector development for astronomy

    NASA Astrophysics Data System (ADS)

    Hanold, Brandon J.; Figer, Donald F.; Lee, Joong; Kolb, Kimberly; Marcuson, Iain; Corrales, Elizabeth; Getty, Jonathan; Mears, Lynn

    2015-08-01

    The Center for Detectors at Rochester Institute of Technology and Raytheon Vision Systems (RVS) are leveraging RVS capabilities to produce large format, short-wave infrared HgCdTe focal plane arrays on silicon (Si) substrate wafers. Molecular beam epitaxial (MBE) grown HgCdTe on Si can reduce detector fabrication costs dramatically, while keeping performance competitive with HgCdTe grown on CdZnTe. Reduction in detector costs will alleviate a dominant expense for observational astrophysics telescopes. This paper presents the characterization of 2.5μm cutoff MBE HgCdTe/Si detectors including pre- and post-thinning performance. Detector characteristics presented include dark current, read noise, spectral response, persistence, linearity, crosstalk probability, and analysis of material defects.

  5. Additional evidence concerning the valence-band offset in HgTe/CdTe

    NASA Astrophysics Data System (ADS)

    Young, P. M.; Ehrenreich, H.

    1991-05-01

    The consistency of large values of the valence-band offset, Λ, in HgTe/CdTe superlattices with magneto-optical experiments is examined in light of data on a 90-Å HgTe/40-Å CdTe superlattice. The data are shown to be consistent with values Λ=400+/-40 meV rather than the much smaller cited values. This analysis, when considered with photoemission experiments, leaves intact the conclusion that HgTe/CdTe superlattices are best explained by a large offset.

  6. A method to eliminate wetting during the homogenization of HgCdTe

    NASA Technical Reports Server (NTRS)

    Su, Ching-Hua; Lehoczky, S. L.; Szofran, F. R.

    1986-01-01

    Adhesion of HgCdTe samples to fused silica ampoule walls, or 'wetting', during the homogenization process was eliminated by adopting a slower heating rate. The idea is to decrease Cd activity in the sample so as to reduce the rate of reaction between Cd and the silica wall.

  7. Energy loss rate of a charged particle in HgTe/(HgTe, CdTe) quantum wells

    SciTech Connect

    Chen, Qinjun; Sin Ang, Yee; Wang, Xiaolin; Lewis, R. A.; Zhang, Chao

    2013-11-04

    The energy loss rate (ELR) of a charged particle in a HgTe/(HgTe, CdTe) quantum well is investigated. We consider scattering of a charged particle by the bulk insulating states in this type of topological insulator. It is found that the ELR characteristics due to the intraband excitation have a linear energy dependence while those due to interband excitation depend on the energy exponentially. An interesting quantitative result is that for a large range of the incident energy, the mean inelastic scattering rate is around a few terahertz.

  8. Proton irradiation of MWIR HgCdTe/CdZnTe

    NASA Astrophysics Data System (ADS)

    Fahey, Stephen; Velicu, Silviu; Bommena, Ramana; Zhao, Jun; Cowan, Vincent; Morath, Christian; Sivananthan, Sivalingam

    2015-09-01

    High performance infrared sensors are vulnerable to slight changes in defect densities and locations. For example in a space application where such sensors are exposed to proton irradiation capable of generating point defects the sensors are known to suffer performance degradation. The degradation can generally be observed in terms of dark current density and responsivity degradations. Here we report results of MWIR HgCdTe/CdZnTe single element diodes dark current densities before and after exposure to 63MeV protons at room temperature to a total ionizing dose of 100 kRad(Si). We find the irradiated diodes as a group show some signs of proton-induced damage in dark current.

  9. Recent progress in MBE grown HgCdTe materials and devices at UWA

    NASA Astrophysics Data System (ADS)

    Gu, R.; Lei, W.; Antoszewski, J.; Madni, I.; Umana-Menbreno, G.; Faraone, L.

    2016-05-01

    HgCdTe has dominated the high performance end of the IR detector market for decades. At present, the fabrication costs of HgCdTe based advanced infrared devices is relatively high, due to the low yield associated with lattice matched CdZnTe substrates and a complicated cooling system. One approach to ease this problem is to use a cost effective alternative substrate, such as Si or GaAs. Recently, GaSb has emerged as a new alternative with better lattice matching. In addition, implementation of MBE-grown unipolar n-type/barrier/n-type detector structures in the HgCdTe material system has been recently proposed and studied intensively to enhance the detector operating temperature. The unipolar nBn photodetector structure can be used to substantially reduce dark current and noise without impeding photocurrent flow. In this paper, recent progress in MBE growth of HgCdTe infrared material at the University of Western Australia (UWA) is reported, including MBE growth of HgCdTe on GaSb alternative substrates and growth of HgCdTe nBn structures.

  10. Acceptor states in heteroepitaxial CdHgTe films grown by molecular-beam epitaxy

    SciTech Connect

    Mynbaev, K. D.; Shilyaev, A. V. Bazhenov, N. L.; Izhnin, A. I.; Izhnin, I. I.; Mikhailov, N. N.; Varavin, V. S.; Dvoretsky, S. A.

    2015-03-15

    The photoluminescence method is used to study acceptor states in CdHgTe heteroepitaxial films (HEFs) grown by molecular-beam epitaxy. A comparison of the photoluminescence spectra of HEFs grown on GaAs substrates (CdHgTe/GaAs) with the spectra of CdHgTe/Si HEFs demonstrates that acceptor states with energy depths of about 18 and 27 meV are specific to CdHgTe/GaAs HEFs. The possible nature of these states and its relation to the HEF synthesis conditions and, in particular, to the vacancy doping occurring under conditions of a mercury deficiency during the course of epitaxy and postgrowth processing are discussed.

  11. Estimation of Thickness and Cadmium Composition Distributions in HgCdTe Focal Plane Arrays

    NASA Astrophysics Data System (ADS)

    Mouzali, S.; Lefebvre, S.; Rommeluère, S.; Ferrec, Y.; Primot, J.

    2016-09-01

    Mercury cadmium telluride (HgCdTe) is one of the most commonly used material systems for infrared detection. The performance of infrared focal-plane arrays (IRFPAs) based on this material is limited by several noise sources. In this paper, we focus on the fixed pattern noise, which is related to disparities between the spectral responses of pixels. In our previous work, we showed that spectral nonuniformities in a HgCdTe IRFPA were caused by inhomogeneities of thickness and cadmium composition in the HgCdTe layer, using an optical description of the pixel structure. We propose to use this bidimensional dependence combined with experimental spectral responses to estimate disparities of thickness and cadmium composition in a specific HgCdTe-based IRFPA. The estimation methods and the resulting maps are presented, highlighting the accuracy of this nondestructive method.

  12. Estimation of Thickness and Cadmium Composition Distributions in HgCdTe Focal Plane Arrays

    NASA Astrophysics Data System (ADS)

    Mouzali, S.; Lefebvre, S.; Rommeluère, S.; Ferrec, Y.; Primot, J.

    2016-05-01

    Mercury cadmium telluride (HgCdTe) is one of the most commonly used material systems for infrared detection. The performance of infrared focal-plane arrays (IRFPAs) based on this material is limited by several noise sources. In this paper, we focus on the fixed pattern noise, which is related to disparities between the spectral responses of pixels. In our previous work, we showed that spectral nonuniformities in a HgCdTe IRFPA were caused by inhomogeneities of thickness and cadmium composition in the HgCdTe layer, using an optical description of the pixel structure. We propose to use this bidimensional dependence combined with experimental spectral responses to estimate disparities of thickness and cadmium composition in a specific HgCdTe-based IRFPA. The estimation methods and the resulting maps are presented, highlighting the accuracy of this nondestructive method.

  13. Molecular beam epitaxy of CdTe and HgCdTe on large-area Si(100)

    NASA Astrophysics Data System (ADS)

    Sporken, R.; Lange, M. D.; Faurie, Jean-Pierre

    1991-09-01

    The current status of molecular beam epitaxy (MBE) of CdTe and HgCdTe on Si(100) is reviewed. CdTe and HgCdTe grow in the (111)B orientation on Si(100); monocrystalline films with two domains are obtained on most nominal Si(100) substrates, single domain films are grown on misoriented substrates and on nominal Si(100) preheated to 900-950 degree(s)C. Double-crystal x-ray rocking curves (DCRCs) with full-width at half-maximum (FWHM) as low as 110 arcsec are reported for HgCdTe on silicon; these layers are n-type, and electron mobilities higher than 5 X 104 cm2V-2s-1 are measured at 23 K for x equals 0.26. Excellent thickness and composition uniformity is obtained: standard deviation of the CdTe thickness 0.4% of the average thickness on 2-in. and 2.3% on 5-in., standard deviation of the Cd concentration in the HgCdTe layers 0.6% of the average concentration on 3-in. and 2.4% on 5-in. First results regarding growth of CdTe on patterned Si substrates are also reported.

  14. Recent progress in MOCVD growth for thermoelectrically cooled HgCdTe medium wavelength infrared photodetectors

    NASA Astrophysics Data System (ADS)

    Gawron, W.; Martyniuk, P.; Kębłowski, A.; Kolwas, K.; Stępień, D.; Piotrowski, J.; Madejczyk, P.; Pędzińska, M.; Rogalski, A.

    2016-04-01

    The authors report on advanced metalorganic chemical vapour deposition (MOCVD) of Hg1-xCdxTe (HgCdTe) structures for high operating temperature, medium wavelength infrared (MWIR) detector application. MOCVD technology with wide range of composition and donor/acceptor doping and without post grown annealing was proved to be an excellent tool for HgCdTe heterostructure epitaxial growth used for uncooled photodetector design. The interdiffused multilayer process (IMP) technique was applied for the HgCdTe deposition. HgCdTe epilayers were grown at 350 °C with Hg source kept at 210 °C. The II/VI mole ratio was assumed in the range from 1.5 to 3 during CdTe/HgTe cycles of the IMP process. The MWIR detectors grown by MOCVD exhibit detectivity ∼7.3 × 1011 Jones at λPEAK = 3.5 μm and T = 230 K being determined by background limited photodetector (BLIP) condition.

  15. Reduction of Dislocation Density in HgCdTe on Si by Producing Highly Reticulated Structures

    NASA Astrophysics Data System (ADS)

    Stoltz, A. J.; Benson, J. D.; Carmody, M.; Farrell, S.; Wijewarnasuriya, P. S.; Brill, G.; Jacobs, R.; Chen, Y.

    2011-08-01

    HgCdTe, because of its narrow band gap and low dark current, is the infrared detector material of choice for several military and commercial applications. CdZnTe is the substrate of choice for HgCdTe as it can be lattice matched, resulting in low-defect-density epitaxy. Being often small and not circular, layers grown on CdZnTe are difficult to process in standard semiconductor equipment. Furthermore, CdZnTe can often be very expensive. Alternative inexpensive large circular substrates, such as silicon or gallium arsenide, are needed to scale production of HgCdTe detectors. Growth of HgCdTe on these alternative substrates has its own difficulty, namely a large lattice mismatch (19% for Si and 14% for GaAs). This large mismatch results in high defect density and reduced detector performance. In this paper we discuss ways to reduce the effects of dislocations by gettering these defects to the edge of a reticulated structure. These reticulated surfaces enable stress-free regions for dislocations to glide to. In the work described herein, HgCdTe-on-Si diodes have been produced with R 0 A 0 of over 400 Ω cm2 at 78 K and cutoff of 10.1 μm. Further, these diodes have good uniformity at 78 K at both 9.3 μm and 10.14 μm.

  16. History of HgCdTe infrared detectors at BAE Systems

    NASA Astrophysics Data System (ADS)

    Reine, Marion B.

    2009-05-01

    This paper describes the history and current status of HgCdTe infrared detector technology at BAE Systems in Lexington, Massachusetts, whose corporate legacy includes Honeywell (1962-1991), Loral (1991-1996), and Lockheed Martin (1996-2000). The Honeywell Radiation Center was founded in 1962 in Boston, Massachusetts. Shortly thereafter, primitive HgCdTe samples began to arrive from the Honeywell Corporate Research Center in Hopkins, Minnesota for evaluation as possible IR detectors. In 1967, procedures for the growth of HgCdTe inhomogeneous large-grain-polycrystalline ingots by a modified Bridgman method were transferred from the Research Center to the Radiation Center. In 1968 the Radiation Center moved to new facilities in Lexington, Massachusetts. HgCdTe activities have expanded and evolved in the ensuing years, remaining in the Lexington, Massachusetts facilities up to the present. This paper reviews the role that the Honeywell/Loral/Lockheed Martin/BAE Systems facility in Lexington, Massachusetts has played in the success of HgCdTe as today's preeminent, highest performance, most versatile, and most widely applicable infrared detector material for the 1-30 μm spectral range. We examine the evolution of both photoconductive and photovoltaic HgCdTe detectors from early unpassivated ill-understood single-element devices through production of linear arrays and to today's large-format two-dimensional IR Focal Plane Arrays for the most demanding spaceborne applications. We examine the progress made in HgCdTe materials science and technology, including improved highly-homogeneous bulk crystal growth, liquid phase epitaxy and metalorganic vapor phase epitaxy. Various devices are used to illustrate the evolution of HgCdTe technology, including the n-type photoconductor, the trapping-mode photoconductor, and the two-layer LPE P-on-n heterojunction.

  17. Irreversibility line of an Ag-doped Hg-based superconductor

    NASA Astrophysics Data System (ADS)

    Mostafa, M. F.; Hassen, A.; Kunkel, H. P.

    2010-08-01

    The effect of doping with Ag of the bulk superconducting Hg0.3La0.7Ba2Ca3(Cu1 - xAgx)4O10 + δ, 0.1 <= x <= 0.3 phase (Hg-1234) is presented. The lattice parameter a = 3.824 Å remains constant, while parameter c was found to increase from c = 19.0225 Å (x = 0.0) to 19.08 Å (x = 0.3) with the addition of Ag. The variation of Tc versus the c-parameter exhibits a cupola-shaped behavior. The irreversibility line is thermally activated. The logarithmic plot of Hirr versus (1 - Tirr/Tc(0)) shows a crossover temperature reflecting a transition from two- to three-dimensional behavior with increasing temperature. Fitting of the results to different models is discussed. Thermally activated de-pinning according to Matsushita's formula gives the best fit.

  18. Sensitive and selective detection of Hg2+ and Cu2+ ions by fluorescent Ag nanoclusters synthesized via a hydrothermal method

    NASA Astrophysics Data System (ADS)

    Liu, Jing; Ren, Xiangling; Meng, Xianwei; Fang, Zheng; Tang, Fangqiong

    2013-09-01

    An easily prepared fluorescent Ag nanoclusters (Ag NCs) probe for the sensitive and selective detection of Hg2+ and Cu2+ ions was developed here. The Ag NCs were synthesized by using polymethacrylic acid sodium salt as a template via a convenient hydrothermal process. The as-prepared fluorescent Ag NCs were monodispersed, uniform and less than 2 nm in diameter, and can be quenched in the presence of mercury (Hg2+) or copper (Cu2+) ions. Excellent linear relationships existed between the quenching degree of the Ag NCs and the concentrations of Hg2+ or Cu2+ ions in the range of 10 nM to 20 μM or 10 nM to 30 μM, respectively. By using ethylenediaminetetraacetate (EDTA) as the masking agent of Cu2+, Hg2+ was exclusively detected in coexistence with Cu2+ with high sensitivity (LOD = 10 nM), which also provided a reusable detection method for Cu2+. Furthermore, the different quenching phenomena caused by the two metals ions such as changes in visible colour, shifts of UV absorbance peaks and changes in size of Ag NCs make it easy to distinguish between them. Therefore the easily synthesized fluorescent Ag NCs may have great potential as Hg2+ and Cu2+ ions sensors.An easily prepared fluorescent Ag nanoclusters (Ag NCs) probe for the sensitive and selective detection of Hg2+ and Cu2+ ions was developed here. The Ag NCs were synthesized by using polymethacrylic acid sodium salt as a template via a convenient hydrothermal process. The as-prepared fluorescent Ag NCs were monodispersed, uniform and less than 2 nm in diameter, and can be quenched in the presence of mercury (Hg2+) or copper (Cu2+) ions. Excellent linear relationships existed between the quenching degree of the Ag NCs and the concentrations of Hg2+ or Cu2+ ions in the range of 10 nM to 20 μM or 10 nM to 30 μM, respectively. By using ethylenediaminetetraacetate (EDTA) as the masking agent of Cu2+, Hg2+ was exclusively detected in coexistence with Cu2+ with high sensitivity (LOD = 10 nM), which also provided a

  19. Numerical study of near-, mid-, and long-infrared photon trapping in crystalline and amorphous HgCdTe metamaterials

    NASA Astrophysics Data System (ADS)

    Jung, Young Uk; Bendoym, Igor; Crouse, David T.

    2016-04-01

    Recently, mercury cadmium telluride (HgCdTe) films have been extensively studied for the metamaterial applications. Crystalline HgCdTe (c-HgCdTe) films attracted people's attention for the spectral detection when used as metasurfaces and demonstrated reduced volume size, increased operating temperature, and improved quantum efficiency. Amorphous HgCdTe (a-HgCdTe) films also have been studied due to their interesting properties. Such properties include film deposition on any substrate, direct growth on device, and higher operating temperatures with the low dark current. Hence, in this work, for the first time, we investigate and compare the use of c-HgCdTe and a-HgCdTe for the photon sorting metasurfaces in near-, mid-, and long-IR spectral range in the sensor applications.

  20. Progress, challenges, and opportunities for HgCdTe infrared materials and detectors

    NASA Astrophysics Data System (ADS)

    Lei, Wen; Antoszewski, Jarek; Faraone, Lorenzo

    2015-12-01

    This article presents a review on the current status, challenges, and potential future development opportunities for HgCdTe infrared materials and detector technology. A brief history of HgCdTe infrared technology is firstly summarized and discussed, leading to the conclusion that HgCdTe-based infrared detectors will continue to be a core infrared technology with expanded capabilities in the future due to a unique combination of its favourable properties. Recent progress and the current status of HgCdTe infrared technology are reviewed, including material growth, device architecture, device processing, surface passivation, and focal plane array applications. The further development of infrared applications requires that future infrared detectors have the features of lower cost, smaller pixel size, larger array format size, higher operating temperature, and multi-band detection, which presents a number of serious challenges to current HgCdTe-based infrared technology. The primary challenges include well controlled p-type doping, lower cost, larger array format size, higher operating temperature, multi-band detection, and advanced plasma dry etching. Various new concepts and technologies are proposed and discussed that have the potential to overcome the existing primary challenges that are inhibiting the development of next generation HgCdTe infrared detector technology.

  1. The Distribution Tail of LWIR HgCdTe-on-Si FPAs: a Hypothetical Physical Mechanism

    NASA Astrophysics Data System (ADS)

    Bubulac, L. O.; Benson, J. D.; Jacobs, R. N.; Stoltz, A. J.; Jaime-Vasquez, M.; Almeida, L. A.; Wang, A.; Wang, L.; Hellmer, R.; Golding, T.; Dinan, J. H.; Carmody, M.; Wijewarnasuriya, P. S.; Lee, M. F.; Vilela, M. F.; Peterson, J.; Johnson, S. M.; Lofgreen, D. F.; Rhiger, D.

    2011-03-01

    A model is proposed to explain disparities found in the operability values and histograms for long-wavelength infrared HgCdTe focal-plane arrays fabricated on Si substrates compared with those fabricated on CdZnTe. The starting point for the model is the close agreement between the aerial density of discrete species (particles, contamination spots, crystalline defects on Si surface) in various interfaces in the HgCdTe/CdTe/Si structure and the density of failed pixels in the array. The density of discrete species is acquired by applying a newly developed variation of the secondary-ion mass spectrometry (SIMS) depth-profiling technique to samples that have been deuterated to enhance detection. A mechanism of selective activation of threading dislocations in a HgCdTe layer on Si is proposed to link discrete species with failed detector pixels.

  2. Cyclotron resonance in HgTe/CdTe-based heterostructures in high magnetic fields.

    PubMed

    Zholudev, Maxim S; Ikonnikov, Anton V; Teppe, Frederic; Orlita, Milan; Maremyanin, Kirill V; Spirin, Kirill E; Gavrilenko, Vladimir I; Knap, Wojciech; Dvoretskiy, Sergey A; Mihailov, Nikolay N

    2012-01-01

    : Cyclotron resonance study of HgTe/CdTe-based quantum wells with both inverted and normal band structures in quantizing magnetic fields was performed. In semimetallic HgTe quantum wells with inverted band structure, a hole cyclotron resonance line was observed for the first time. In the samples with normal band structure, interband transitions were observed with wide line width due to quantum well width fluctuations. In all samples, impurity-related magnetoabsorption lines were revealed. The obtained results were interpreted within the Kane 8·8 model, the valence band offset of CdTe and HgTe, and the Kane parameter EP being adjusted. PMID:23013642

  3. Cyclotron resonance in HgTe/CdTe-based heterostructures in high magnetic fields

    PubMed Central

    2012-01-01

    Cyclotron resonance study of HgTe/CdTe-based quantum wells with both inverted and normal band structures in quantizing magnetic fields was performed. In semimetallic HgTe quantum wells with inverted band structure, a hole cyclotron resonance line was observed for the first time. In the samples with normal band structure, interband transitions were observed with wide line width due to quantum well width fluctuations. In all samples, impurity-related magnetoabsorption lines were revealed. The obtained results were interpreted within the Kane 8·8 model, the valence band offset of CdTe and HgTe, and the Kane parameter EP being adjusted. PMID:23013642

  4. MBE growth and interfaces characterizations of strained HgTe/CdTe topological insulators

    NASA Astrophysics Data System (ADS)

    Thomas, C.; Baudry, X.; Barnes, J. P.; Veillerot, M.; Jouneau, P. H.; Pouget, S.; Crauste, O.; Meunier, T.; Lévy, L. P.; Ballet, P.

    2015-09-01

    Topological insulator materials like HgTe exhibit unique electronic properties at their interfaces and so peculiar attention has to be paid concerning the growth optimization. Molecular beam epitaxy of tensile-strained HgTe/CdTe is investigated as a function of the growth temperature. Crystal quality is checked by using high resolution X-rays diffraction. By combining several material characterization techniques such as scanning transmission electronic microscopy, time-of-flight secondary ion mass spectroscopy and X-rays reflectivity, we report sharp interface morphology with nanometer-scale Hg/Cd diffusion lengths.

  5. Highly fluorescent, near-infrared-emitting Cd²⁺-tuned HgS nanocrystals with optical applications.

    PubMed

    Yang, Jing; Hu, Yaoping; Luo, Jun; Zhu, Yu-Hua; Yu, Jun-Sheng

    2015-03-24

    Bulk HgS itself has proven to be a technologically important material; however, the poor stability and weak emission of HgS nanocrystals have greatly hindered their promising applications. Presently, a critical problem is the uncontrollable growth of HgS NCs and their intrinsic surface states which are susceptible to the local environment. Here, we address the issue by an ion-tuning approach to fabricating stable, highly fluorescent Cd:HgS/CdS NCs for the first time, which efficiently tuned the band-gap level of HgS NCs, pushing their intrinsic states far away from the surface, reducing the strong interaction of the environment with surface states and hence drastically boosting the exciton transition. As compared to bare HgS NCs, the obtained Cd:HgS/CdS NCs exhibited tunable luminescence peaks from 724 to 825 nm with an unprecedentedly high quantum yield up to 40% at room temperature and excellent thermal and photostability. Characterized by TEM, XRD, XPS, and AAS, the resultant Cd:HgS/CdS NCs possessed a zinc-blende structure and was composed of a homogeneous alloyed HgCdS structure coated with a thin-layer CdS shell. The formation mechanism of Cd:HgS/CdS NCs was proposed. These bright, stable HgS-based NCs presented promising applications as fluorescent inks for anticounterfeiting and as excellent light converters when coated onto a blue-light-emitting diode. PMID:25741758

  6. Occurrence of toxic metals (Hg, Cd and Pb) in fresh and canned tuna: public health implications.

    PubMed

    Storelli, Maria M; Barone, Grazia; Cuttone, Giuseppe; Giungato, Daniele; Garofalo, Rita

    2010-11-01

    Hg, Pb and Cd levels in fresh and canned tuna were determined and assessed by comparing element levels in these samples with maximum permissible limits set by European legislation. The estimated weekly intakes by human consuming both fresh and canned tuna were also evaluated for possible consumer health risks. Among tested metals, Hg had the highest concentrations, followed by Pb and Cd either in fresh tuna or canned tuna. None of the tested samples surpassed the European regulatory limits fixed for Cd and Pb, whereas 8.9% of the tuna cans and 20% of fresh tuna samples exceeded standard for Hg. The size of tuna was a determining factor of Hg burden. A high intake of Hg surpassing the toxicological reference value established by WHO, was associated with consumption of larger size tuna specimens. Also canned tuna consumption with Hg concentrations higher than 1 μg kg(-1), strongly increased the consumer exposure. In contrast, Cd and Pb weekly intakes through consumption either of fresh tuna or canned tuna did not exceed the toxicological reference values established by WHO, and consequently there was no human health risk. A continuous surveillance system of Hg content in these fishery products is crucial for consumer protection. PMID:20728500

  7. High-temperature HgTe/CdTe multiple-quantum-well lasers.

    PubMed

    Vurgaftman, I; Meyer, J

    1998-02-16

    While most previous studies of Hg-based mid-IR lasers have focused on either bulk Hg(1-x)Cd(x)Te alloys or thick (> 100 A) Hg(1-x)Cd(x)Te quantum wells with relatively large x, we show that much thinner (20-30 A) HgTe binary wells may be engineered to suppress both Auger recombination and intervalence free carrier absorption. On the basis of detailed numerical simulations, we predict 4.3 m cw emission at temperatures up to 220 K for optical pumping and 105 K for diode operation. In pulsed mode, we expect maximum lasing temperatures more than 100 K higher than any prior Hg-based mid-IR result. PMID:19377592

  8. Composition dependence of the mercury vacancies energy levels in HgCdTe: Evolution of the ``negative-U'' property

    NASA Astrophysics Data System (ADS)

    Gemain, F.; Robin, I. C.; Feuillet, G.

    2013-12-01

    HgCdTe films grown by liquid phase epitaxy with different Cd compositions were post-annealed to control the Hg vacancy concentration. Then temperature-dependent Hall measurements and photoluminescence measurements allowed us to study the evolution of the Hg vacancy acceptor levels with the cadmium composition. For Cd compositions below 33% the Hg vacancies in HgCdTe present a negative-U property with the ionized state V- stabilized compared to the neutral state V0. For Cd compositions higher than 45%, the Hg vacancies in HgCdTe present a more standard level ordering with the ionized state V- at higher energy than the neutral state V0.

  9. Low Temperature, Rapid Thermal Cycle Annealing of HgCdTe Grown on CdTe/Si

    NASA Astrophysics Data System (ADS)

    Simingalam, Sina; Brill, Gregory; Wijewarnasuriya, Priyalal; Rao, Mulpuri V.

    2015-05-01

    The HgCdTe(MCT) grown on CdTe/Si substrate has a high dislocation density due to lattice mismatch. Thermal cycle annealing (TCA) is effective in reducing the dislocation density. The TCA at high temperatures results in inter-diffusion of the constituent elements across the MCT/CdTe interface. In this study, we observed a reduction in dislocation density with good surface morphology due to proper design of the TCA system, low annealing temperature, and large number of annealing cycles. The ampoule containing the samples is placed in direct contact with the graphite heating tube which helps in increasing the heating and cooling rates of the annealing cycle. To maintain Hg overpressure, Hg is placed in the sample holder, instead of in the ampoule to avoid Hg condensation. The best results were obtained by cycling the annealing temperature between 290°C and 350°C. Anneals were performed by using 32, 64, 128 and 256 cycles. We obtained an etch pit density (EPD) as low as 1 × 106 cm-2. Lower EPD was not achieved either by increasing annealing temperature or number of annealing cycles. Through secondary ion mass spectroscopy analysis, we observed very little inter-diffusion of Cd across the MCT/CdTe interface for the 128 cycle annealing. These results show promise in bridging the gap in the device performance between the MCT material grown on CdTe/Si and CdZnTe substrates.

  10. HgCdTe on sapphire — A new approach to infrared detector arrays

    NASA Astrophysics Data System (ADS)

    Gertner, E. R.; Tennant, W. E.; Blackwell, J. D.; Rode, J. P.

    1985-08-01

    Some of the limitations imposed by bulk CdTe substrates on epitaxial HgCdTe, such as wafer size, fragility, and uniformity, have led to the development of an alternate substrate to CdTe for epitaxial HgCdTe growths. Described here are the synthesis and some of the properties of an alternate hybrid CdTe/sapphire substrate, and the material and device properties of liquid phase epitaxial (LPE) grown HgCdTe on CdTe/sapphire substrates. Devices made in LPE grown HgCdTe layers on CdTe/sapphire have shown excellent electrical and optical properties and superior uniformity in diode-to-diode D * in midwave infrared (MWIR) focal planes at low temperature when compared to devices fabricated in HgCdTe grown on CdTe substrates. Diodes have typical resistance area product values of ⩾ 10 Ω cm 2 at 195 K (cutoff wavelength λ c = 4.2 μm), ⩾ 3 x 10 4 Ω cm 2 at 120 K (λ c = 4.45 μm) and ⩾ 1 x 10 6 Ω cm 2 at 77 K (λ c = 4.6 μm). Typical quantum efficiencies are 60-80% without anti-reflection coating. Analysis of the detectivity of a 1024 element MWIR hybrid focal plane array shows that the number of defective elements, even under low-to-moderate photon backgrounds (high 10 12 photons cm -2 s -1), is less than 5%.

  11. Surface defects induced by impurities in MBE-grown HgCdTe

    NASA Astrophysics Data System (ADS)

    Fu, Xiangliang; Wang, Weiqiang; Wei, Qingzhu; Wu, Jun; Chen, Lu; Wu, Yan; He, Li

    2008-03-01

    Surface defects of molecular beam epitaxially grown HgCdTe are the major concern in developing large format infrared focal plane arrays. Voids were usually observed on the HgCdTe surfaces as previously reported, they were originated either from the improper substrates preparation or from the growth condition. However, the defects formation with impurities has not been addressed. This paper presents our recent observation on defects induced by the impurities involved in the mercury beam fluxes. These defects can be craters or bumps, having a spatially clustering feature. To identify the origin of these kinds of defects, experiments were performed on HgCdTe as well as CdTe with mercury flux, and the defects were observed and analyzed by using SEM and EDAX. The result, for the first time, confirmed that impurities in the mercury beam were responsible to the formation of surface defects.

  12. Sensitive and selective detection of Hg2+ and Cu2+ ions by fluorescent Ag nanoclusters synthesized via a hydrothermal method.

    PubMed

    Liu, Jing; Ren, Xiangling; Meng, Xianwei; Fang, Zheng; Tang, Fangqiong

    2013-10-21

    An easily prepared fluorescent Ag nanoclusters (Ag NCs) probe for the sensitive and selective detection of Hg(2+) and Cu(2+) ions was developed here. The Ag NCs were synthesized by using polymethacrylic acid sodium salt as a template via a convenient hydrothermal process. The as-prepared fluorescent Ag NCs were monodispersed, uniform and less than 2 nm in diameter, and can be quenched in the presence of mercury (Hg(2+)) or copper (Cu(2+)) ions. Excellent linear relationships existed between the quenching degree of the Ag NCs and the concentrations of Hg(2+) or Cu(2+) ions in the range of 10 nM to 20 μM or 10 nM to 30 μM, respectively. By using ethylenediaminetetraacetate (EDTA) as the masking agent of Cu(2+), Hg(2+) was exclusively detected in coexistence with Cu(2+) with high sensitivity (LOD = 10 nM), which also provided a reusable detection method for Cu(2+). Furthermore, the different quenching phenomena caused by the two metals ions such as changes in visible colour, shifts of UV absorbance peaks and changes in size of Ag NCs make it easy to distinguish between them. Therefore the easily synthesized fluorescent Ag NCs may have great potential as Hg(2+) and Cu(2+) ions sensors. PMID:24056730

  13. Defect chemistry and characterization of Hg sub 1x Cd sub x Te

    NASA Technical Reports Server (NTRS)

    Vydyanath, H. R.

    1982-01-01

    Single crystal samples of undoped and doped Hg sub 1-x Cd sub x Te were annealed at varying temperatures and partial pressures of Hg. Hall effect and mobility measurements were carried out on these samples after quenching to room temperature. Based on the variation of the carrier concentration and the carrier mobility as a function of the partial pressure of Hg temperature, and dopant concentration, defect models were established for the doped and the undoped crystals. These models indicate that the native acceptor defects in both Hg0.8Cd0.2Te and Hg0.6Cd0.4Te doubly ionized and the native donor defects are negligible in concentration, implying that p to n conversion in these alloys occurs due only to residual donors. Incorporation mechanism of copper, indium, iodine, and phosphorus were investigated. A large concentration of indium is found to be paired with the native acceptor defects. Results on crystals doped with phosphorus indicate that phosphorus behaves amphoterically, acting as a donor on Hg lattice sites and as an acceptor intersitially on Te lattice sites. A majority of the phosphorus is found to be present as neutral species formed from the pairing reaction between phosphorus on Hg lattice sites and phosphorus in interstitial sites. Equilibrium constants for the intrinsic excitation reaction, as well as for the incorporation of the different dopants and the native acceptor defects were established.

  14. Molecular Beam Epitaxy Growth of HgCdTe on Large-Area Si and CdZnTe Substrates

    NASA Astrophysics Data System (ADS)

    Reddy, M.; Peterson, J. M.; Vang, T.; Franklin, J. A.; Vilela, M. F.; Olsson, K.; Patten, E. A.; Radford, W. A.; Bangs, J. W.; Melkonian, L.; Smith, E. P. G.; Lofgreen, D. D.; Johnson, S. M.

    2011-08-01

    This paper presents the status of HgCdTe growth on large-area Si and CdZnTe substrates at Raytheon Vision Systems (RVS). The different technological tools that were used to scale up the growth from 4 inch to 6 inch diameter on Si and from 4 cm × 4 cm to 8 cm × 8 cm on CdZnTe without sacrificing the quality of the layers are described. Extremely high compositional uniformity and low macrodefect density were achieved for single- and two-color HgCdTe layers on both Si and CdZnTe substrates. Finally, a few examples of detector and focal-plane array results are included to highlight the importance of high compositional uniformity and uniformly low macrodefect density of the epitaxial layers in obtaining high operability and low cluster outages in single- and two-color focal-plane arrays (FPAs).

  15. Extranuclear dynamics of 111Ag(→111Cd) doped in AgI nanoparticles

    NASA Astrophysics Data System (ADS)

    Sato, W.; Mizuuchi, R.; Irioka, N.; Komatsuda, S.; Kawata, S.; Taoka, A.; Ohkubo, Y.

    2014-08-01

    Dynamic behavior of the extranuclear field relative to the 111Ag(→111Cd) probe nucleus introduced in a superionic conductor silver iodide (AgI) was investigated by means of the time-differential perturbed angular correlation technique. For poly-N-vinyl-2-pyrrolidone (PVP)-coated AgI nanoparticles, we observed nuclear spin relaxation of the probe at room temperature. This result signifies that Ag+ ions in the polymer-coated sample make hopping motion from site to site at this low temperature. The activation energy for the dynamic motion was successfully estimated to be 46(10) meV. The first atomic-level observation of the temperature-dependent dynamic behavior of Ag+ ions in the polymer-coated AgI is reported.

  16. Investigation of linear-mode photon-counting HgCdTe APDs for astronomical observations

    NASA Astrophysics Data System (ADS)

    Bryan, Marta L.; Chapman, George; Hall, Donald N. B.; Jack, Michael D.; Jacobson, Shane M.; Wehner, Justin

    2012-07-01

    The unique linear avalanche properties of HgCdTe preserve the Poisson statistics of the incoming photons, opening up new opportunities for GHz bandwidth LADAR and space communications applications. Raytheon has developed and previously reported (1) unique linear mode photon counting arrays based on combining advanced HgCdTe linear mode APDs with their high gain SB415B readout. Their use of HgCdTe APDs preserves the Poisson statistics of the incoming photons, enabling (noiseless) photon counting. This technology is of great potential interest to infrared astronomy but requires extension of noiseless linear HgCdTe avalanching down to much lower bandwidths (100 to 0.001 Hz) with corresponding reductions in dark count rate. We have hybridized the SB415B readout to SWIR HgCdTe APDs optimized for low dark count rate and have characterized their photon counting properties at bandwidths down to 1 KHz. As bandwidth is reduced, the performance becomes limited by the intrinsic properties of the SB415B readout, particularly readout glow, stability and 1/f noise. We report the results of these measurements and the status of hybrid arrays utilizing a newly developed readout which draws on Raytheon’s astronomical readout heritage, specifically the Virgo charge integrating source follower, as a path to much lower dark count rate photon counting operation.

  17. A new circuit model of HgCdTe photodiode for SPICE simulation of integrated IRFPA

    NASA Astrophysics Data System (ADS)

    Saxena, Raghvendra Sahai; Saini, Navneet Kaur; Bhan, R. K.; Sharma, R. K.

    2014-11-01

    We propose a novel sub circuit model to simulate HgCdTe infrared photodiodes in a circuit simulator, like PSPICE. We have used two diodes of opposite polarity in parallel to represent the forward biased and the reverse biased behavior of an HgCdTe photodiode separately. We also connected a resistor in parallel with them to represent the ohmic shunt and a constant current source to represent photocurrent. We show that by adjusting the parameters in standard diode models and the resistor and current values, we could actually fit the measured data of our various HgCdTe photodiodes having different characteristics. This is a very efficient model that can be used for simulation of readout integrated circuit (ROIC) for HgCdTe IR photodiode arrays. This model also allows circuit level Monte Carlo simulation on a complete IRFPA at a single circuit simulator platform to estimate the non-uniformity for given processes of HgCdTe device fabrication and Si ROIC fabrication.

  18. Doping behavior of iodine in Hg/0.8/Cd/0.2/Te

    NASA Technical Reports Server (NTRS)

    Vydyanath, H. R.; Kroger, F. A.

    1982-01-01

    The defect state prevailing in iodine doped single-crystal samples of Hg0.8Cd0.2Te, annealed at 450-600 C in Hg vapor, has been deduced from Hall effect measurements on samples cooled to 77 K from the annealing temperature. Results are found to be similar to those previously obtained for iodine doped CdS, i.e. iodine acts as a single donor occupying Te lattice sites with a fraction paired with the native acceptor defects. The concentration of iodine on tellurium lattice sites increases with the partial pressure of Hg, whereas that of the pair species increases as the partial pressure of Hg decreases.

  19. Photoluminescence and upconversion on Ag/CdTe quantum dots

    NASA Astrophysics Data System (ADS)

    Ragab, A. E.; Gadallah, A.-S.; Mohamed, M. B.; Azzouz, I. M.

    2014-11-01

    Different sizes of aqueous CdTe QDs have been prepared by microwave via controlling the temperature and time of irradiation. To study the plasmonic effect on CdTe QDs, Silver NPs were prepared by using a chemical reduction method. Structure characterization of the nanocrystals (Ag NPs and CdTe QDs) was determined by transmission electron microscopy “TEM”. For optical characterization, the absorption and photolumincence (PL) spectra were measured. It has been found that there are two opposite behaviors (quenching and enhancement) in the fluorescence spectra based on the spectral coupling strength between Ag NPs and CdTe QDs. When there is strong overlapping, PL enhancement of CdTe QDs has been observed. On the other hand, when the overlapping is weak, the PL quenching was predominant at all Ag NPS concentrations. Input-output PL intensity dependence was also studied. Upconversion photoluminescence with low excitation intensity was observed in our CdTe QDs with a standard spectrofluorometer at excitation wavelength of 800 nm. Thermally assisted surface state mechanism has been proposed to be responsible for the upconverion process.

  20. Spectral, thermal, electrochemical and analytical studies on Cd(II) and Hg(II) thiosemicarbazone complexes

    NASA Astrophysics Data System (ADS)

    El-Asmy, A. A.; El-Gammal, O. A.; Saleh, H. S.

    2008-11-01

    The coordination characteristic of the investigated thiosemicarbazones towards hazard pollutants, Cd(II) and Hg(II), becomes the first goal. Their complexes have been studied by microanalysis, thermal, electrochemical and spectral (electronic, IR and MS) studies. The substitutent (salicylaldehyde, acetophenone, benzophenone, o-hydroxy- p-methoxybenzophenone or diacetylmonoxime) plays an important role in the complex formation. The coordination sites were the S for thiosemicarbazide (HTS); NN for benzophenone thiosemicarbazone (HBTS); NS for acetophenone thiosemicarbazone (HATS) and salicylaldehyde thiosemicarbazone (H 2STS); NNS or NSO for diacetylmonoxime thiosemicarbazone (H 2DMTS). The stability constants of Hg(II) complexes were higher than Cd(II). The kinetic and thermodynamic parameters for the different thermal decomposition steps in the complexes have been evaluated. The activation energy values of the first step ordered the complexes as: [Cd(H 2STS)Cl 2]H 2O > [Cd(H 2DAMTS)Cl 2] > [Cd(HBTS) 2Cl 2]2H 2O > [Cd(HATS) 2Cl 2]. The CV of [Cd(H 2STS)Cl 2]H 2O and [Hg(HBTS)Cl 2] were recorded. The use of H 2DMTS as a new reagent for the separation and determination of Cd(II) ions from water and some synthetic samples using flotation technique is aimed to be discussed.

  1. Nonlinear terahertz response of HgTe/CdTe quantum wells

    SciTech Connect

    Chen, Qinjun; Sanderson, Matthew; Zhang, Chao

    2015-08-24

    Without breaking the topological order, HgTe/CdTe quantum wells can have two types of bulk band structure: direct gap type (type I) and indirect gap type (type II). We report that the strong nonlinear optical responses exist in both types of bulk states under a moderate electric field in the terahertz regime. Interestingly, for the type II band structure, the third order conductivity changes sign when chemical potentials lies below 10 meV due to the significant response of the hole excitation close to the bottom of conduction band. Negative nonlinear conductivities suggest that HgTe/CdTe quantum wells can find application in the gain medium of a laser for terahertz radiation. The thermal influences on nonlinear optical responses of HgTe/CdTe quantum wells are also studied.

  2. Advanced planar LWIR and VLWIR HgCdTe focal plane arrays

    NASA Astrophysics Data System (ADS)

    Chu, Muren; Gurgenian, Ray H.; Mesropian, Shoghig; Terterian, Sevag; Becker, Latika; Walsh, D.; Kokoroski, S. A.; Goodnough, Mark A.; Rosner, Brett D.

    2004-01-01

    The advanced planar ion-implantation-isolated heterojunction process, which utilizes the benefits of both the boron implantation and the heterojunction epitaxy techniques, has been developed and used to produce longwave and very longwave HgCdTe focal plane arrays in the 320v256 format. The wavelength of these arrays ranges from 10.0-17.0μm. The operability of the longwave HgCdTe arrays is typically over 97%. Without anti-reflection coating and with a 60° FOV cold shield, the D* of the 10.0μm array is 9.4x1010cm x (Hz)1/2 x W-1 at 77K. The 14.7μm and 17.0μm very longwave HgCdTe array diodes have excellent reverse characteristics. The detailed characteristics of these arrays are presented.

  3. Nonlinear terahertz response of HgTe/CdTe quantum wells

    NASA Astrophysics Data System (ADS)

    Chen, Qinjun; Sanderson, Matthew; Zhang, Chao

    2015-08-01

    Without breaking the topological order, HgTe/CdTe quantum wells can have two types of bulk band structure: direct gap type (type I) and indirect gap type (type II). We report that the strong nonlinear optical responses exist in both types of bulk states under a moderate electric field in the terahertz regime. Interestingly, for the type II band structure, the third order conductivity changes sign when chemical potentials lies below 10 meV due to the significant response of the hole excitation close to the bottom of conduction band. Negative nonlinear conductivities suggest that HgTe/CdTe quantum wells can find application in the gain medium of a laser for terahertz radiation. The thermal influences on nonlinear optical responses of HgTe/CdTe quantum wells are also studied.

  4. Inductively coupled plasma etching of HgCdTe IRFPAs detectors at cryogenic temperature

    NASA Astrophysics Data System (ADS)

    Chen, Y. Y.; Ye, Z. H.; Sun, C. H.; Zhang, S.; Hu, X. N.; Ding, R. J.; He, L.

    2016-05-01

    To fabricate various advanced structures with HgCdTe material, the Inductively Coupled Plasma enhanced Reactive Ion Etching system is indispensable. However, due to low damage threshold and complicated behaviors of mercury in HgCdTe, the lattice damage and induced electrical conversion is very common. According to the diffusion model during etching period, the mercury interstitials, however, may not diffuse deep into the material at cryogenic temperature. In this report, ICP etching of HgCdTe at cryogenic temperature was implemented. The etching system with cryogenic assembly is provided by Oxford Instrument. The sample table was cooled down to 123K with liquid nitrogen. The mask of SiO2 with a contact layer of ZnS functioned well at this temperature. The selectivity and etching velocity maintained the same as reported in the etching of room temperature. Smooth and clean surfaces and profiles were achieved with an optimized recipe.

  5. Exploiting the higher specificity of silver amalgamation: selective detection of mercury(II) by forming Ag/Hg amalgam.

    PubMed

    Deng, Li; Ouyang, Xiangyuan; Jin, Jianyu; Ma, Cheng; Jiang, Ying; Zheng, Jing; Li, Jishan; Li, Yinhui; Tan, Weihong; Yang, Ronghua

    2013-09-17

    Heavy metal ion pollution poses severe risks in human health and the environment. Driven by the need to detect trace amounts of mercury, this article demonstrates, for the first time, that silver/mercury amalgamation, combining with DNA-protected silver nanoparticles (AgNPs), can be used for rapid, easy and reliable screening of Hg(2+) ions with high sensitivity and selectivity over competing analytes. In our proposed approach, Hg(2+) detection is achieved by reducing the mercury species to elemental mercury, silver atoms were chosen as the mercury atoms' acceptors by forming Ag/Hg amalgam. To signal fluorescently this silver amalgamation event, a FAM-labeled ssDNA was employed as the signal reporter. AgNPs were grown on the DNA strand that resulted in greatly quenching the FAM fluorescence. Formation of Ag/Hg amalgam suppresses AgNPs growth on the DNA, leading to fluorescence signal increase relative to the fluorescence without Hg(2+) ions, as well as marked by fluorescence quenching. This FAM fluorescence enhancement can be used for detection of Hg(2+) at the a few nanomolar level. Moreover, due to excellent specificity of silver amalgamation with mercury, the sensing system is highly selective for Hg(2+) and does not respond to other metal ions with up to millimolar concentration levels. This sensor is successfully applied to determination of Hg(2+) in tap water, spring water and river water samples. The results shown herein have important implications in the development of new fluorescent sensors for the fast, easy, and selective detection and quantification of Hg(2+) in environmental and biological samples. PMID:23937672

  6. Prototyping of MWIR MEMS-based optical filter combined with HgCdTe detector

    NASA Astrophysics Data System (ADS)

    Kozak, Dmitry A.; Fernandez, Bautista; Velicu, Silviu; Kubby, Joel

    2010-02-01

    In the past decades, there have been several attempts to create a tunable optical detector with operation in the infrared. The drive for creating such a filter is its wide range of applications, from passive night vision to biological and chemical sensors. Such a device would combine a tunable optical filter with a wide-range detector. In this work, we propose using a Fabry-Perot interferometer centered in the mid-wave infrared (MWIR) spectrum with an HgCdTe detector. Using a MEMS-based interferometer with an integrated Bragg stack will allow in-plane operation over a wide range. Because such devices have a tendency to warp, creating less-than-perfect optical surfaces, the Fabry-Perot interferometer is prototyped using the SOI-MUMPS process to ensure desirable operation. The mechanical design is aimed at optimal optical flatness of the moving membranes and a low operating voltage. The prototype is tested for these requirements. An HgCdTe detector provides greater performance than a pyroelectic detector used in some previous work, allowing for lower noise, greater detection speed and higher sensitivity. Both a custom HgCdTe detector and commercially available pyroelectric detector are tested with commercial optical filter. In previous work, monolithic integration of HgCdTe detectors with optical filters proved to be problematic. Part of this work investigates the best approach to combining these two components, either monolithically in HgCdTe or using a hybrid packaging approach where a silicon MEMS Fabry-Perot filter is bonded at low temperature to a HgCdTe detector.

  7. Recent Progress in MBE Growth of CdTe and HgCdTe on (211)B GaAs Substrates

    NASA Astrophysics Data System (ADS)

    Carmody, M.; Yulius, A.; Edwall, D.; Lee, D.; Piquette, E.; Jacobs, R.; Benson, D.; Stoltz, A.; Markunas, J.; Almeida, A.; Arias, J.

    2012-10-01

    Alternate substrates for molecular beam epitaxy growth of HgCdTe including Si, Ge, and GaAs have been under development for more than a decade. MBE growth of HgCdTe on GaAs substrates was pioneered by Teledyne Imaging Sensors (TIS) in the 1980s. However, recent improvements in the layer crystal quality including improvements in both the CdTe buffer layer and the HgCdTe layer growth have resulted in GaAs emerging as a strong candidate for replacement of bulk CdZnTe substrates for certain infrared imaging applications. In this paper the current state of the art in CdTe and HgCdTe MBE growth on (211)B GaAs and (211) Si at TIS is reviewed. Recent improvements in the CdTe buffer layer quality (double crystal rocking curve full-width at half-maximum ≈ 30 arcsec) with HgCdTe dislocation densities of ≤106 cm-2 are discussed and comparisons are made with historical HgCdTe on bulk CdZnTe and alternate substrate data at TIS. Material properties including the HgCdTe majority carrier mobility and dislocation density are presented as a function of the CdTe buffer layer quality.

  8. Cladding technique for development of Ag In Cd decoupler

    NASA Astrophysics Data System (ADS)

    Teshigawara, M.; Harada, M.; Saito, S.; Kikuchi, K.; Kogawa, H.; Ikeda, Y.; Kawai, M.; Kurishita, H.; Konashi, K.

    2005-08-01

    To develop a Ag (silver)-In (indium)-Cd (cadmium) alloy decoupler, a method is needed to bond the decoupler between two plates of the Al alloy (A6061-T6). We found that a better HIP condition was temperature, pressure and holding time at 803 K, 100 MPa and 1 h, respectively, for small test pieces ( ϕ 22 mm in diam. × 5 mm in height). Especially, a sandwich case (a Ag-In plate with thickness of 0.5 mm between two Ag-Cd plates with thickness of 1.25 mm) gave easier (or better) bonding results. Though a hardened layer is found in the bonding layer, the rupture strength of the bonding layer is more than 30 MPa, which is higher than the design stress in our application.

  9. Magnetotransport in double quantum well with inverted energy spectrum: HgTe/CdHgTe

    NASA Astrophysics Data System (ADS)

    Yakunin, M. V.; Suslov, A. V.; Popov, M. R.; Novik, E. G.; Dvoretsky, S. A.; Mikhailov, N. N.

    2016-02-01

    We present an experimental study of the double-quantum-well (DQW) system made of two-dimensional layers with inverted energy band spectrum: HgTe. The magnetotransport reveals a considerably larger overlap of the conduction and valence subbands than in known HgTe single quantum wells (QW), which may be regulated here by an applied gate voltage Vg. This large overlap manifests itself in a much higher critical field Bc separating the range above it with a plain behavior of the Hall magnetoresistance ρx y(B ) , where the quantum peculiarities shift linearly with Vg, and the range below with a complicated behavior. In the latter case, specific structures in ρx y(B ) are formed like a double-N -shaped ρx y(B ) , reentrant sign-alternating quantum Hall effect with transitions into a zero-filling-factor state, etc., which are clearly manifested here due to better magnetic quantization at high fields, as compared to the features seen earlier in a single HgTe QW. The coexisting electrons and holes were found in the whole investigated range of positive and negative Vg as revealed (i) from fits to the low-field N -shaped ρx y(B ) , (ii) from the Fourier analysis of oscillations in ρx x(B ) , and (iii) from a specific behavior of ρx y(B ) at high positive Vg. A peculiar feature here is that the found electron density n remains almost constant in the whole range of investigated Vg while the hole density p drops down from the value a factor of 6 larger than n at extreme negative Vg to almost zero at extreme positive Vg passing through the charge-neutrality point. We show that this difference between n and p stems from an order of magnitude larger density of states for holes in the lateral valence subband maxima than for electrons in the conduction subband minimum. We analyze our observations on the basis of a calculated picture of magnetic levels in a DQW and suggest that their specificity is due to (i) a nonmonotonic course of the valence subband magnetic levels and an

  10. Surface electrons in inverted layers of p-HgCdTe

    NASA Technical Reports Server (NTRS)

    Schacham, Samuel E.; Finkman, Eliezer

    1990-01-01

    Anodic oxide passivation of p-type HgCdTe generates an inversion layer. Extremely high Hall mobility data for electrons in this layer indicated the presence of a two-dimensional electron gas. This is verified by use of the Shubnikov-de Haas effect from 1.45 to 4.15 K. Data are extracted utilizing a numerical second derivative of dc measurement. Three sub-bands are detected. Their relative occupancies are in excellent agreement with theory and with experimental results obtained on anodic oxide as accumulation layers of n-type HgCdTe. The effective mass derived is comparable to what was expected.

  11. HgCdTe Photoconductive Mixers for 2-8 THz

    NASA Technical Reports Server (NTRS)

    Betz, A. L.; Boreiko, R. T.; Sivananthan, S.; Ashokan, R.

    2001-01-01

    Heterodyne spectroscopy has been taken to wavelengths as short as 63 micrometers with Schottky-diode mixers. Schottkys, however, are relatively insensitive compared to superconducting mixers such as the hot-electron microbolometer (HEB), which has an effective quantum efficiency of 3% at 120 micrometers (2.5 THz). Although HEB sensitivities are bound to improve, there will always be losses associated with antenna coupling of radiation into sub-micron size devices. Another approach to far infrared (FIR) mixer design is to use a photoconductive device which can be made much larger than a wavelength, and thus act as its own antenna. For example, HgCdTe photodiodes have been used as mixers in the lambda = 10 micrometers band for over 25 years, with sensitivities now only a factor of 2 from the quantum-noise-limit. HgCdTe can also be applied at FIR wavelengths, but surprisingly little work has been done to date. The exception is the pioneering work of Spears and Kostiuk and Spears, who developed HgCdTe photomixers for the 20-120 micrometer region. The spectral versatility of the HgCdTe alloy is well recognized for wavelengths as long as 8-20 micrometers. What is not so recognized, however, is that theoretically there is no long wavelength limit for appropriately composited HgCdTe. Although Spears successfully demonstrated a photoconductive response from HgCdTe at 120 micrometers, this initial effort was apparently never followed up, in part because of the difficulty of controlling the HgCdTe alloy composition with liquid-phase-epitaxy (LPE) techniques. With the availability of precise molecular-beam-epitaxy (MBE) since the early 1990's, it is now appropriate to reconsider HgCdTe for detector applications longward of lambda = 20 micrometers. We recently initiated an effort to fabricate detectors and mixers using II-VI materials for FIR wavelengths. Of particular interest are device structures called superlattices, which offer a number of advantages for high sensitivity

  12. Colloidal CdTe/HgTe quantum dots with high photoluminescence quantum efficiency at room temperature

    NASA Astrophysics Data System (ADS)

    Kershaw, Stephen V.; Burt, Mike; Harrison, Mike; Rogach, Andrey; Weller, Horst; Eychmüller, Alex

    1999-09-01

    We have used an aqueous colloidal growth technique to form hybrid CdTe/HgTe quantum dots with a broad, strong fluorescence in the infrared (800-1200 nm). The quantum efficiency is high, around 44%, when pumped in the visible (488 nm), and the excited state lifetime is around 130 ns, making the material interesting as an optical amplifier medium. Using a pump-probe experiment, we have demonstrated weak optical amplification in a dilute aqueous suspension of CdTe/HgTe dots in the short wavelength wing of the emission spectrum at 808 nm.

  13. Implantation effects on resonant Raman scattering in CdTe and Cd 0.23Hg 0.77Te

    NASA Astrophysics Data System (ADS)

    Ramsteiner, M.; Lusson, A.; Wagner, J.; Koidl, P.; Bruder, M.

    1990-04-01

    We have studied In + implanted CdTe and Cd 0.23Hg 0.77Te by resonant Raman scattering. The laser excitation was in resonance with the EO + Δ O band gap in CdTe or the E1 gap in Cd 0.23Hg 0.77Te. Under these conditions dipole forbidden but defect ind scattering by one longitudinal optical (LO) phonon as well as Fröhlich-induced two-LO phonon scattering is observed. In both cases scattering is found to be strongly affected by ion implantation. In + was implanted at an ion energy of 350 keV with doses ranging from 10 11 to 5×10 14 ions/cm 2. The intensity ratio of the one-LO phonon lines is found to be a quantitative measure of the implantation damage in CdTe and Cd 0.23Hg 0.77Te even for doses as low as 10 11 ions/cm 2. It is shown that the observed effects of implantation damage on resonant Raman scattering by LO phonons are due to a broadening and an energy shift of the corresponding resonances in the Raman scattering efficiency.

  14. Temperature-driven massless Kane fermions in HgCdTe crystals.

    PubMed

    Teppe, F; Marcinkiewicz, M; Krishtopenko, S S; Ruffenach, S; Consejo, C; Kadykov, A M; Desrat, W; But, D; Knap, W; Ludwig, J; Moon, S; Smirnov, D; Orlita, M; Jiang, Z; Morozov, S V; Gavrilenko, V I; Mikhailov, N N; Dvoretskii, S A

    2016-01-01

    It has recently been shown that electronic states in bulk gapless HgCdTe offer another realization of pseudo-relativistic three-dimensional particles in condensed matter systems. These single valley relativistic states, massless Kane fermions, cannot be described by any other relativistic particles. Furthermore, the HgCdTe band structure can be continuously tailored by modifying cadmium content or temperature. At critical concentration or temperature, the bandgap collapses as the system undergoes a semimetal-to-semiconductor topological phase transition between the inverted and normal alignments. Here, using far-infrared magneto-spectroscopy we explore the continuous evolution of band structure of bulk HgCdTe as temperature is tuned across the topological phase transition. We demonstrate that the rest mass of Kane fermions changes sign at critical temperature, whereas their velocity remains constant. The velocity universal value of (1.07±0.05) × 10(6) m s(-1) remains valid in a broad range of temperatures and Cd concentrations, indicating a striking universality of the pseudo-relativistic description of the Kane fermions in HgCdTe. PMID:27573209

  15. Hydrogen-Te antisite complex impurity (H-TeHg) in Hg0.75Cd0.25Te: First-principles study

    NASA Astrophysics Data System (ADS)

    Xue, L.; Zhou, P.; Zhang, C. X.; Sun, L. Z.; Zhong, Jianxin

    2013-08-01

    Using first-principles method within the framework of the density functional theory, we study the formation energies and the binding energies of hydrogen-telluride antisite complex impurities (n H-TeHg, n=1,2) in Hg0.75Cd0.25Te. We find that telluride antisite impurity (TeHg) in Hg0.75Cd0.25Te is a double donor. When Te antisite and an interstitial hydrogen move close to each other, the interaction between them leads to the creation of a stable 1H-TeHg complex with a binding energy of 0.33 eV. In this case, the donor effects induced by Te antisite are partially passivated. As the hydrogen concentration increases, the binding energy of the 2H-TeHg forming from combining H-TeHg with interstitial hydrogen is only 0.005 eV. Namely, 2H-TeHg is unstable in Hg0.75Cd0.25Te and hydrogenation cannot fully neutralize Te antisite defects.

  16. Directional solidification of HgCdTe and HgZnTe in a transverse magnetic field

    NASA Technical Reports Server (NTRS)

    Su, Ching-Hua; Lehoczky, S. L.; Szofran, F. R.

    1991-01-01

    Hg(0.80)Cd(0.20)Te crystals were grown vertically in a transverse magnetic field by directional solidification. The effect of a magnetic field on the nature of fluid flow in the melts was investigated by measuring compositional variations along the axial and radial directions of the grown ingots. Magnetic field effects were shown to be significant over the entire field range employed (i.e., 2 to 5 kG). The axial compositional profiles (determined by precision density measurements) showed an abrupt decrease in the mole fraction of CdTe when the field was applied. Radial compositional mapping by IR transmission and X-ray energy dispersion spectrometry indicated that the solid-liquid interface evolved through three stages when the field was applied (i.e., from a radially symmetric concave interface to an off-center concave shape when the field was initially applied, then to a tilted plane, and, finally, to an off-center concave interface). The axial compositional profile of an Hg(0.84)Zn(0.16)Te ingot showed similar field effects.

  17. Fluorescent sensor for selective determination of copper ion based on N-acetyl-L-cysteine capped CdHgSe quantum dots.

    PubMed

    Wang, Qingqing; Yu, Xiangyang; Zhan, Guoqing; Li, Chunya

    2014-04-15

    Using N-acetyl-L-cysteine as a stabilizer, well water-dispersed, high-quality and stable CdHgSe quantum dots were facilely synthesized via a simple aqueous phase method. The as-prepared N-acetyl-L-cysteine capped CdHgSe quantum dots were thoroughly characterized by transmission electron microscopy, X-ray diffraction spectroscopy and FTIR. A fluorescent sensor for selective determination of copper ions was developed using N-acetyl-L-cysteine capped CdHgSe quantum dots as fluorescent probe. The fluorescence intensity of N-acetyl-L-cysteine capped CdHgSe quantum dots decreased when interacted with copper ions due to the formation of coordination complex and aggregates. The method possesses high selectivity and is not influenced by some potential interferences such as Ag(+), Zn(2+), Co(2+) and Ni(2+). Under the optimal conditions, the change of fluorescence intensity (ΔI) was linearly proportional to the concentration of copper ions in the range of 1.0×10(-9)-4.0×10(-7) mol L(-1), with a detection limit as low as 2.0×10(-10) mol L(-1) (S/N=3). The developed method had been successfully employed to determine Cu(2+) in shrimp and South-lake water samples, and the results were verified by atomic absorption spectroscopy. The fluorescent sensor was demonstrated to be selective, sensitive and simple for copper ion determination, and promise for practical applications. PMID:24291268

  18. Bioavailability of Cd, Zn and Hg in Soil to Nine Recombinant Luminescent Metal Sensor Bacteria

    PubMed Central

    Bondarenko, Olesja; Rõlova, Taisia; Kahru, Anne; Ivask, Angela

    2008-01-01

    A set of nine recombinant heavy metal-specific luminescent bacterial sensors belonging to Gram-negative (Escherichia and Pseudomonas) and Gram-positive (Staphylococcus and Bacillus) genera and containing various types of recombinant metal-response genetic elements was characterized for heavy metal bioavailability studies. All nine strains were induced by Hg and Cd and five strains also by Zn. As a lowest limit, the sensors were detecting 0.03 μg·L-1 of Hg, 2 μg·L-1 of Cd and 400 μg·L-1 of Zn. Limit of determination of the sensors depended mostly on metal-response element, whereas the toxicity of those metals towards the sensor bacteria was mostly dependent on the type of the host bacterium, with Gram-positive strains being more sensitive than Gram-negative ones. The set of sensors was used to evaluate bioavailability of Hg, Cd and Zn in spiked soils. The bioavailable fraction of Cd and Zn in soil suspension assay (2.6 – 5.1% and 0.32 – 0.61%, of the total Cd and Zn, respectively) was almost comparable for all the sensors, whereas the bioavailability of Hg was about 10-fold higher for Gram-negative sensor cells (30.5% of total Hg), compared to Gram-positive ones (3.2% of the total Hg). For Zn, the bioavailable fraction in soil-water suspensions and respective extracts was comparable (0.37 versus 0.33% of the total Zn). However, in the case of Cd, for all the sensors used and for Hg concerning only Gram-negative sensor strains, the bioavailable fraction in soil-water suspensions exceeded the water-extracted fraction about 14-fold, indicating that upon direct contact, an additional fraction of Cd and Hg was mobilized by those sensor bacteria. Thus, for robust bioavailability studies of heavy metals in soils any type of genetic metal-response elements could be used for the construction of the sensor strains. However, Gram-positive and Gram-negative senor strains should be used in parallel as the bioavailability of heavy metals to those bacterial groups may be

  19. Distribution of the surface potential of epitaxial HgCdTe

    SciTech Connect

    Novikov, V. A. Grigoryev, D. V.; Bezrodnyy, D. A.; Dvoretsky, S. A.

    2014-09-08

    We studied the distribution of surface potential of the Hg{sub 1−x}Cd{sub x}Te epitaxial films grown by molecular beam epitaxy. The studies showed that the variation of the spatial distribution of surface potential in the region of the V-defect can be related to the variation of the material composition of epitaxial film. The V-defect is characterized by increased of Hg content with respect to the composition of the solid solution of Hg{sub 1−x}Cd{sub x}Te epitaxial film. In this paper, it was demonstrated that the unformed V-defects can be observed together with the macroscopic V-defects on the epitaxial film surface. These unformed V-defects can allow the creation of a complex surface potential distribution profile due to the redistribution of the solid solution composition.

  20. Dense Array Effects in SWIR HgCdTe Photodetecting Arrays

    NASA Astrophysics Data System (ADS)

    Wichman, A. R.; Pinkie, B.; Bellotti, E.

    2015-09-01

    This paper presents results from three-dimensional quantitative modeling on dense, moderately doped [ N D ( N A) = 5 × 1015 cm-3] short-wave infrared (SWIR) p + n and n + p Hg1- x Cd x Te double planar heterostructure photodetecting arrays with absorber x = 0.451 and cap x = 0.55. At uniform reverse bias, the competition for minority carriers between closely spaced diodes preserves densities below equilibrium levels throughout the absorber. This carrier suppression has several consequences in addition to suppressing dark current by constraining the minority-carrier gradients at each diode junction. First, the dense arrays maintain volume-average negative net radiative recombination rates (negative luminescence) roughly an order of magnitude larger than comparably biased isolated diodes. Second, the negative excess minority-carrier densities suppress the volume-average net Auger recombination rate by roughly an order of magnitude in dense n-type HgCdTe arrays compared with a single diode. Third, the long minority electron diffusion lengths in the p-type HgCdTe absorber not only suppress lateral diffusion currents, but do so in a manner that provides negative differential resistance. By suppressing intrinsic recombination rates, or lateral diffusion currents, each effect can contribute to increasing R 0 A products in SWIR HgCdTe dense arrays. These effects should be considered when optimizing device structures for pitch, thickness, feature size, doping, and bias points.

  1. Total dose and proton testing of a commercial HgCdTe array

    SciTech Connect

    Hopkinson, G.R. ); Baddiley, C.J.; Guy, D.R.P. ); Parsons, J.E. )

    1994-12-01

    The radiation tolerance of a commercially available 256 x 4 HgCdTe array has been measured. The main effects were ionization-induced and produced changes in diode slope resistance and CMOS multiplexer characteristics particularly the onset of parasitic leakage currents after [approximately]15krad(Si). However these effects annealed with storage above 20 C.

  2. Further comments on segregation during Bridgman growth of Cd(x)Hg(1-x)Te

    NASA Technical Reports Server (NTRS)

    Lehoczky, S. L.; Szofran, F. R.

    1984-01-01

    The authors comment on recent papers published by Capper et al. (1983) and Jones et al. (1983) which report and discuss the variation of composition with axial position in Bridgman-grown Cd(x)Hg(1-x)Te alloys. The validity of a diffusion-controlled model for non-mixing growth conditions is particularly noted.

  3. Modeling of HgCdTe focal plane array spectral inhomogeneities

    NASA Astrophysics Data System (ADS)

    Mouzali, Salima; Lefebvre, Sidonie; Rommeluère, Sylvain; Ferrec, Yann; Primot, Jérôme

    2015-06-01

    Infrared focal plane arrays (IRFPA) are widely used to perform high quality measurements such as spectrum acquisition at high rate, ballistic missile defense, gas detection, and hyperspectral imaging. For these applications, the fixed pattern noise represents one of the major limiting factors of the array performance. This sensor imperfection refers to the nonuniformity between pixels, and is partially caused by disparities of the cut-off wavenumbers. In this work, we focus particularly on mercury cadmium telluride (HgCdTe), which is the most important material of IR cooled detector applications. Among the many advantages of this ternary alloy is the tunability of the bandgap energy with Cadmium composition, as well as the high quantum efficiency. In order to predict and understand spectral inhomogeneities of HgCdTe-based IRFPA, we propose a modeling approach based on the description of optical phenomena inside the pixels. The model considers the p-n junctions as a unique absorbent bulk layer, and derives the sensitivity of the global structure to both Cadmium composition and HgCdTe layer thickness. For this purpose, HgCdTe optical and material properties were necessary to be known at low temperature (80K), in our operating conditions. We therefore achieved the calculation of the real part of the refractive index using subtracti

  4. Arsenic complexes optical signatures in As-doped HgCdTe

    SciTech Connect

    Gemain, F.; Robin, I. C.; Brochen, S.; Ballet, P.; Gravrand, O.; Feuillet, G.

    2013-04-08

    In this paper, the optical signatures of arsenic complexes in As-doped HgCdTe samples grown by molecular beam epitaxy are clearly identified using comparison between photoluminescence spectra, Extended X-Ray Absorption Fine Structure, and Hall measurements. The ionization energies of the different complexes are measured both by photoluminescence and Hall measurements.

  5. Lateral Diffusion Length Changes in HgCdTe Detectors in a Proton Environment

    NASA Technical Reports Server (NTRS)

    Hubbs, John E.; Marshall, Paul W.; Marshall, Cheryl J.; Gramer, Mark E.; Maestas, Diana; Garcia, John P.; Dole, Gary A.; Anderson, Amber A.

    2007-01-01

    This paper presents a study of the performance degradation in a proton environment of very long wavelength infrared (VLWIR) HgCdTe detectors. The energy dependence of the Non-Ionizing Energy Loss (NIEL) in HgCdTe provides a framework for estimating the responsivity degradation in VLWIR HgCdTe due to on orbit exposure from protons. Banded detector arrays that have different detector designs were irradiated at proton energies of 7, 12, and 63 MeV. These banded detector arrays allovedin sight into how the fundamental detector parameters degraded in a proton environment at the three different proton energies. Measured data demonstrated that the detector responsivity degradation at 7 MeV is 5 times larger than the degradation at 63 MeV. The comparison of the responsivity degradation at the different proton energies suggests that the atomic Columbic interaction of the protons with the HgCdTe detector is likely the primary mechanism responsible for the degradation in responsivity at proton energies below 30 MeV.

  6. LWIR HgCdTe: Innovative detectors in an incumbent technology

    NASA Technical Reports Server (NTRS)

    Tennant, William E.

    1990-01-01

    HgCdTe is the current material of choice for high performance imagers operating at relatively high temperatures. Its lack of technological maturity compared with silicon and wide-band gap III-V compounds is more than offset by its outstanding IR sensitivity and by the relatively benign effect of its materials defects. This latter property has allowed non-equilibrium growth techniques, metal oxide chemical vapor deposition (MOCVD) and molecular beam epitaxy (MBE), to produce device quality long wavelength infrared (LWIR) HgCdTe even on common substrates like GaAs and GaAs/Si. Detector performance in these exotic materials structures is comparable in many ways with devices in equilibrium-grown material. Lifetimes are similar. RoA values at 77K as high as several hundred have been seen in HgCdTe/GaAs/Si with 9.5 micron cut-off wavelength. HgCdTe/GaAs layers with approx. 15 micron cut-off wavelengths have given average 77K RoAs of greater than 2. Hybrid focal plane arrays have been evaluated with excellent operability.

  7. Development of megapixel HgCdTe detector arrays with 15 micron cutoff

    NASA Astrophysics Data System (ADS)

    Forrest, William J.; McMurtry, Craig W.; Dorn, Meghan L.; Pipher, Judith; Cabrera, Mario S.

    2016-06-01

    I. HistoryHgCdTe is a versatile II-VI semiconductor with a direct-bandgap tunable via the Hg:Cd ratio. Hg:Cd ratio = 53:47 (2.5 micron cutoff) was used on the NICMOS instrument on HST and the 2MASS. Increasing Hg:Cd ratio to 70:30 leads to a 5.4 micron cutoff, utilized in NEOWISE and many JWST instruments. Bailey, Wu et al. (1998) motivated extending this technology to 10 microns and beyond. Bacon, McMurtry et al. (2003, 2004) indicated significant progress toward this longwave (LW) goal.Warm-Spitzer has pioneered passive cooling to below 30 K in space, enabling the JWST mission.II. CurrentNASA's proposed NEOcam mission selected HgCdTe with a 10.6 micron cutoff because it promises natural Zodiacal background limited sensitivity with modest cooling (40 K). Teledyne Imaging Systems (TIS) is producing megapixel arrays with excellent performance (McMurtry, Lee, Dorn et al. (2013)) for this mission.III. FutureModest cooling requirements (circa 30 K) coupled with megapixel arrays and LW sensitivity in the thermal IR make HgCdTe attractive for many infrared instruments. For instance, the spectral signature of a terrestrial planet orbiting in the habitable zone of a nearby star will be the deep and wide absorption by CO_2 centered at 15 microns (Seager and Deming, 2010). LW instruments can enhance Solar System missions, such as exploration of the Enceladus geysers (Spencer, Buratti et al. 2006). Passive cooling will be adequate for these missions. Modern ground-based observatories will benefit from infrared capability out to the N band (7.5-13.6 microns). The required detector temperatures (30-40 K) are easily achievable using commercially available mechanical cryo-coolers (refrigerators).IV. Progress to dateTIS is developing megapixel HgCdTe arrays sensitive out to 15 microns under the direction of the University of Rochester. As a first step, we have produced arrays with a 13 micron cutoff. The initial measurements indicate very promising performance. We will present the

  8. Defect chemistry and characterization Hg(1-x)Cd(x)Te

    NASA Astrophysics Data System (ADS)

    Vydyanath, H. R.; Donovan, J. C.

    Iodine doped single crystal samples of mercury cadmium telluride were annealed at temperatures varying from 450 C to 600 C in Hg vapor and quenched to room temperature. Hall effect measurements at 77 K on the crystals cooled to room temperature indicate the samples to be n-type after anneals at high Hg pressures whereas they turn p-type after anneals at low Hg pressures; the electron concentration increases with increase in Hg pressure. The results are explained on the basis that the crystals are saturated with (Hg,Cd)I2, with a fraction of the iodine being present as donor occupying tellurium lattice sites and a fraction being present as acceptors resulting from the iodine on tellurium lattice sites pairing with the doubly ionized native acceptor defects. The solubility of the donor species increases with increase in Hg pressure, whereas that of the acceptor species increases with decrease in Hg pressure. Equilibrium constants for the incorporation of the iodine species as well as the pairing reaction were established.

  9. Defect chemistry and characterization Hg(1-x)Cd(x)Te

    NASA Technical Reports Server (NTRS)

    Vydyanath, H. R.; Donovan, J. C.

    1981-01-01

    Iodine doped single crystal samples of mercury cadmium telluride were annealed at temperatures varying from 450 C to 600 C in Hg vapor and quenched to room temperature. Hall effect measurements at 77 K on the crystals cooled to room temperature indicate the samples to be n-type after anneals at high Hg pressures whereas they turn p-type after anneals at low Hg pressures; the electron concentration increases with increase in Hg pressure. The results are explained on the basis that the crystals are saturated with (Hg,Cd)I2, with a fraction of the iodine being present as donor occupying tellurium lattice sites and a fraction being present as acceptors resulting from the iodine on tellurium lattice sites pairing with the doubly ionized native acceptor defects. The solubility of the donor species increases with increase in Hg pressure, whereas that of the acceptor species increases with decrease in Hg pressure. Equilibrium constants for the incorporation of the iodine species as well as the pairing reaction were established.

  10. Progress in MOCVD growth of HgCdTe heterostructures for uncooled infrared photodetectors

    NASA Astrophysics Data System (ADS)

    Piotrowski, A.; Madejczyk, P.; Gawron, W.; Kłos, K.; Pawluczyk, J.; Rutkowski, J.; Piotrowski, J.; Rogalski, A.

    2007-01-01

    This paper describes the significant progress in the development of metalorganic chemical vapour deposition of Hg 1- xCd xTe (HgCdTe) multilayer heterostructures on GaAs/CdTe substrates for uncooled infrared photodetectors. The paper focuses on the interdiffused multilayer process (IMP). The optimum conditions for the growth of single layers and complex multilayer heterostructures have been established. One of the crucial stages of HgCdTe epitaxy is CdTe nucleation on GaAs substrate. Successful composite substrates have been obtained with suitable substrate preparation, liner and susceptor treatment, proper control of background fluxes and appropriate nucleation conditions. Epiready (1 0 0) GaAs wafers with 2-4° disorientation towards <1 0 0> and <1 1 0> have been used. Due to the large mismatch between GaAs and CdTe, both (1 0 0) and (1 1 1) growth may occur. Generally, layers with orientation (1 0 0) show superior morphology compared to (1 1 1), but they are also characterized by hillocks. The benefits of the precursors, ethyl iodine (EI) and arsine (AsH 3), for controlled iodine donor doping and arsenic acceptor doping at dopant concentrations relevant for HgCdTe junction devices are summarized. In situ anneal seems to be sufficient for iodine doping at any required level. In contrast, efficient As doping with near 100% activation requires ex situ anneal at near saturated mercury vapours. Finally, the multilayer fully doped heterostructures for photovoltaic devices operated at room temperature have been fabricated. The special attention is focused on the improvement in multijunction LWIR photovoltaic detectors. The performance of photodiodes is also presented.

  11. Arsenic p-Doping of HgCdTe Grown by Molecular Beam Epitaxy (MBE): A Solved Problem?

    NASA Astrophysics Data System (ADS)

    Garland, James W.; Grein, Christoph; Sivananthan, Sivalingam

    2013-11-01

    The goal of achieving well-controlled, reproducibly p-doped mercury cadmium telluride (HgCdTe) with sharp p- n junctions and low Shockley-Read-Hall contribution τ SRH to the minority carrier lifetime τ has been pursued for the past 30 years by the HgCdTe molecular beam epitaxial (MBE) growth community, but remains elusive. On the other hand, n-doping with In avoids the short τ SRH characteristic of arsenic-doped MBE-grown HgCdTe and is well controlled, stable, and reproducibly 100% activated as-grown. However, as discussed herein, because of inherent limitations of n-doped absorber layers, overcoming the challenges of successfully p-doping HgCdTe remains an important problem, especially for long-wavelength infrared detectors. We briefly review the achievements that have been made in p-doping HgCdTe, point out the reasons why achieving well-controlled, reproducibly p-doped MBE-grown HgCdTe with a lifetime τ not limited by τ SRH remains a very important task, discuss the probable origin of the short τ SRH in MBE-grown HgCdTe, and discuss possible ways to achieve much longer values of τ SRH in MBE-grown p-doped HgCdTe.

  12. InGaAs versus HgCdTe for short-wavelength infrared applications

    NASA Astrophysics Data System (ADS)

    Rogalski, Antoni; Ciupa, Robert

    1999-04-01

    The carrier lifetimes in In(subscript x)Ga(subscript 1-x)As (InGaAs) and Hg(subscript 1-x)Cd(subscript x)Te (HgCdTe) ternary alloys for radiative and Auger recombination are calculated for temperature 300 K in the short wavelength range 1.5 less than (lambda) less than 3.7 micrometer. Due to photon recycling, an order of magnitude enhancements in the radiative lifetimes over those obtained from the standard van Roosbroeck and Shockley expression, has been assumed. This theoretical prediction has been confirmed by good agreement with experimental data for n-type In(subscript 0.53)Ga(subscript 0.47)As. The possible Auger recombination mechanisms (CHCC, CHLH and CHSH processes) in direct-gap semiconductors are investigated. In both n-type ternary alloys, the carrier lifetimes are similar, and competition between radiative and CHCC processes take place. In p-type materials the carrier lifetime are also comparable, however the most effective channels of Auger mechanisms are: CHSH process in InGaAs, and CHLH process in HgCdTe. Next, the performance of heterostructure p-on-n photovoltaic devices are considered. Theoretically predicted R(subscript o)A values are compared with experimental data reported by other authors. In(subscript 0.53)Ga(subscript 0.47)As photodiodes have shown the device performance within a factor of 10 of theoretical limit. However, the performance of InGaAs photodiodes decreases rapidly at intermediate wavelengths due to mismatch-induced defects. HgCdTe photodiodes maintain high performance close to ultimate limit over a wider range of wavelengths. In this context technology of HgCdTe is considerably advanced since the same lattice parameter of this alloy over wide composition range.

  13. Investigation of Substrate Effects on Interface Strain and Defect Generation in MBE-Grown HgCdTe

    NASA Astrophysics Data System (ADS)

    Gu, R.; Lei, W.; Antoszewski, J.; Faraone, L.

    2016-09-01

    Si, Ge, and GaAs have been extensively investigated as alternative substrates for molecular-beam epitaxy (MBE) growth of HgCdTe and, at present, are widely used for HgCdTe-based infrared focal-plane arrays. However, the problem of high dislocation density in HgCdTe layers grown on these lattice-mismatched substrates has yet to be resolved. In this work, we investigated another alternative substrate, GaSb, which has a significantly smaller lattice mismatch with HgCdTe in comparison with Si, Ge, and GaAs, and is readily available as large-area, epiready wafers at much lower cost in comparison with lattice-matched CdZnTe substrates. The resultant stress due to lattice and thermal mismatch between the HgCdTe epilayer and various substrates has been calculated in this work using the elasticity matrix, and the corresponding stress distribution simulated using ANSYS. The simulated structures were matched by experimental samples involving MBE growth of HgCdTe on GaAs, GaSb, and CdZnTe substrates, and were characterized via reflection high-energy electron diffraction and x-ray diffraction analysis, followed by etch pit density (EPD) analysis. In comparison with other alternative substrates, GaSb is shown to have lower interface stress and lower EPD, rendering it an interesting and promising alternative substrate material for HgCdTe epitaxy.

  14. Investigation of Substrate Effects on Interface Strain and Defect Generation in MBE-Grown HgCdTe

    NASA Astrophysics Data System (ADS)

    Gu, R.; Lei, W.; Antoszewski, J.; Faraone, L.

    2016-05-01

    Si, Ge, and GaAs have been extensively investigated as alternative substrates for molecular-beam epitaxy (MBE) growth of HgCdTe and, at present, are widely used for HgCdTe-based infrared focal-plane arrays. However, the problem of high dislocation density in HgCdTe layers grown on these lattice-mismatched substrates has yet to be resolved. In this work, we investigated another alternative substrate, GaSb, which has a significantly smaller lattice mismatch with HgCdTe in comparison with Si, Ge, and GaAs, and is readily available as large-area, epiready wafers at much lower cost in comparison with lattice-matched CdZnTe substrates. The resultant stress due to lattice and thermal mismatch between the HgCdTe epilayer and various substrates has been calculated in this work using the elasticity matrix, and the corresponding stress distribution simulated using ANSYS. The simulated structures were matched by experimental samples involving MBE growth of HgCdTe on GaAs, GaSb, and CdZnTe substrates, and were characterized via reflection high-energy electron diffraction and x-ray diffraction analysis, followed by etch pit density (EPD) analysis. In comparison with other alternative substrates, GaSb is shown to have lower interface stress and lower EPD, rendering it an interesting and promising alternative substrate material for HgCdTe epitaxy.

  15. Hg-loss compensation and wiping-off of source liquid on slider liquid phase epitaxy of Hg 1- xCd xTe

    NASA Astrophysics Data System (ADS)

    Shinohara, Motoya; Nugraha; Noda, Yasutoshi; Furukawa, Yoshitaka

    1994-08-01

    Hg loss measurement and wiping the liquid source on Hg 1- xCd xTe (MCT) layer growth were performed using a slider liquid phase epitaxy (LPE) boat with a HgTe reservoir. The optimum conditions to compensate Hg loss were revealed, where an increased amount of HgTe in the reservoir was effective to stabilize the weight change of source liquid due to Hg evaporation. The wiping was effectively made on equilibrium cooling from the melting point, where thin MCT layers (2-4 μm) resulted and the surface was slightly terraced. Thick layers (30-40 μm) resulted from the supercooling and step cooling with a supercooling of 15 K. The composition of the grown layers was x = 0.25-0.42.

  16. Biomonitoring potential of five sympatric Tillandsia species for evaluating urban metal pollution (Cd, Hg and Pb)

    NASA Astrophysics Data System (ADS)

    Sánchez-Chardi, Alejandro

    2016-04-01

    The present study quantifies non essential heavy metals highly toxic for biological systems (Pb, Hg and Cd) in five autochthonous epiphytic plants from Tillandsia genus (T. recurvata, T. meridionalis, T. duratii, T. tricholepis, T. loliacea) according to different traffic levels (reference, low, medium and high polluted sites) in Asunción (Paraguay). The three metals increased in polluted sites following Pb (till 62.99 ppm in T. tricholepis) > Cd (till 1.35 ppm in T. recurvata) > Hg (till 0.36 ppm in T. recurvata) and Pb and Cd levels were directly related to traffic flow. Although the species showed similar bioaccumulation pattern (namely, higher levels of metals in polluted sites), enrichment factors (maximum EF values 37.00, 18.16, and 11.90 for Pb, Hg, and Cd, respectively) reported T. tricholepis as the most relevant bioindicator due to its wide distribution and abundance in study sites, low metal content in control site and high metal contents in polluted sites, and significant correlations with traffic density of Pb and Cd. This study emphasizes the necessity of biomonitoring air pollution in areas out of air monitoring control such as Asunción, where the high levels of metal pollution especially Pb, may represent an increment of risk for the human population inhabiting this urban area.

  17. Analysis of Mesa Dislocation Gettering in HgCdTe/CdTe/Si(211) by Scanning Transmission Electron Microscopy

    NASA Astrophysics Data System (ADS)

    Jacobs, R. N.; Stoltz, A. J.; Benson, J. D.; Smith, P.; Lennon, C. M.; Almeida, L. A.; Farrell, S.; Wijewarnasuriya, P. S.; Brill, G.; Chen, Y.; Salmon, M.; Zu, J.

    2013-11-01

    Due to its strong infrared absorption and variable band-gap, HgCdTe is the ideal detector material for high-performance infrared focal-plane arrays (IRFPAs). Next-generation IRFPAs will utilize dual-color high-definition formats on large-area substrates such as Si or GaAs. However, heteroepitaxial growth on these substrates is plagued by high densities of lattice-mismatch-induced threading dislocations (TDs) that ultimately reduce IRFPA operability. Previously we demonstrated a postgrowth technique with the potential to eliminate or move TDs such that they have less impact on detector operability. In this technique, highly reticulated mesa structures are produced in as-grown HgCdTe epilayers, and then subjected to thermal cycle annealing. To fully exploit this technique, better understanding of the inherent mechanism is required. In this work, we employ scanning transmission electron microscopy (STEM) analysis of HgCdTe/CdTe/Si(211) samples prepared by focused ion beam milling. A key factor is the use of defect-decorated samples, which allows for a correlation of etch pits observed on the surface with underlying dislocation segments viewed in cross-section STEM images. We perform an analysis of these dislocations in terms of the general distribution, density, and mobility at various locations within the mesa structures. Based on our observations, we suggest factors that contribute to the underlying mechanism for dislocation gettering.

  18. HgCdTe Molecular Beam Epitaxy Growth Temperature Calibration Using Spectroscopic Ellipsometry

    NASA Astrophysics Data System (ADS)

    Vilela, M. F.; Pribil, G. K.; Olsson, K. R.; Lofgreen, D. D.

    2012-10-01

    In this work, spectroscopic ellipsometry (SE) is demonstrated as a technique to calibrate growth temperature measurement devices (thermocouples and pyrometers) prior to real mercury cadmium telluride (HgCdTe) growth. A pyrometer is used to control the substrate temperature in molecular beam epitaxy (MBE) for the growth of HgCdTe-based material. It is known that a very narrow optimal growth temperature range exists for HgCdTe, typically ±5°C. A nonoptimal growth temperature will negatively impact on material quality by inducing growth defects, reducing composition uniformity, causing difficulty in controlling doping incorporation, promoting poor electronic properties, and having other adverse effects. Herein, we present a method for measuring and calibrating substrate temperature measurement equipment by using spectroscopic ellipsometry (SE) prior to real HgCdTe growth. This method is easy to implement, nondestructive, and reliable. The proposed method requires one substrate with a surface material with optical properties well known in the temperature range of interest, but not necessarily the same base material as the material to be grown. In the specific case of this work, we use epitaxial CdTe material on top of a Si substrate. This wafer was used to create a database of its optical properties as a function of temperature by using SE. From the collected optical parameters, a model is built and a fit is generated from the SE data collected. The temperature can then be determined by fitting the temperature-dependent SE measurements from this specific CdTe material. The angle offset and surface roughness parameters are also included in the model to account for changes in the average run-to-run angle variations and surface conditions over time. This work does not attempt to obtain an absolute temperature, but rather a reliable and repeatable relative temperature measurement.

  19. Investigation of ICPECVD Silicon Nitride Films for HgCdTe Surface Passivation

    NASA Astrophysics Data System (ADS)

    Zhang, J.; Umana-Membreno, G. A.; Gu, R.; Lei, W.; Antoszewski, J.; Dell, J. M.; Faraone, L.

    2015-09-01

    In this paper, we report results of a study of SiN x thin films for surface passivation of HgCdTe epitaxial layers. The hydrogenated amorphous SiN x films under study were deposited by a SENTECH SI500D inductively coupled plasma-enhanced chemical vapor deposition (ICPECVD) system with a high-density and low-ion-energy plasma source at relatively low substrate temperatures (80°C to 100°C). A series of SiN x films were first deposited on CdTe/GaAs and Si substrates under different deposition conditions to examine the influence of ICP power, deposition temperature, and NH3/SiH4 ratio on properties of the SiN x films. To investigate SiN x deposition conditions suitable for surface passivation of HgCdTe, the SiN x / n-Hg0.68Cd0.32Te interface characteristics were investigated employing capacitance-voltage measurements, and the corresponding interface trap densities D it were extracted from the high-frequency and low-frequency characteristics. Analysis of SiN x / n-Hg0.68Cd0.32Te metal-insulator-semiconductor (MIS) structures indicated that Si-rich SiN x films deposited at 100°C by ICPECVD exhibit electrical characteristics suitable for surface passivation of HgCdTe-based devices, that is, interface trap densities in the range of mid-1010 cm-2 eV-1 and fixed negative interface charge densities of ˜1011 cm-2. In addition, the relationship between bond concentration and surface passivation performance has been explored based on infrared (IR) absorbance spectra. The Si-H and N-H bond concentrations were found to be directly correlated with passivation performance, such that SiN x films with a combination of high [Si-H] and low [N-H] bond concentrations were found to be suitable as electrical passivation layers on HgCdTe.

  20. Identification of the double acceptor levels of the mercury vacancies in HgCdTe

    NASA Astrophysics Data System (ADS)

    Gemain, F.; Robin, I. C.; De Vita, M.; Brochen, S.; Lusson, A.

    2011-03-01

    Photoluminescence and temperature-dependent Hall measurements of nonintentionally doped HgCdTe epilayers were compared. These films were grown by liquid phase epitaxy and postannealed under different conditions as follows: a p-type annealing was used to control the mercury vacancy concentration and a n-type annealing under saturated Hg atmosphere was used to fill the mercury vacancies. The comparison of the photoluminescence measurements with Hall effect measurements allows us to identify the two acceptor energy levels of the mercury vacancy and to evidence its "negative-U" property corresponding to a stabilization of the ionized state V- of the mercury vacancy compared to its neutral state V0.

  1. Cross-Sectional Study of Macrodefects in MBE Dual-Band HgCdTe on CdZnTe

    NASA Astrophysics Data System (ADS)

    Reddy, M.; Lofgreen, D. D.; Jones, K. A.; Peterson, J. M.; Radford, W. A.; Benson, J. D.; Johnson, S. M.

    2013-11-01

    HgCdTe dual-band mid-wave infrared/long-wave infrared focal-plane arrays on CdZnTe are a key component in advanced electrooptic sensor applications. Molecular beam epitaxy (MBE) has been used successfully for growth of dual-band layers on larger CdZnTe substrates. However, the macrodefect density, which is known to reduce the pixel operability and its run-to-run variation, is larger when compared with layers grown on Si substrate. This paper reports the macrodefect density versus size signature of a well-optimized MBE dual-band growth and a cross-sectional study of a macrodefect that represents the most prevalent class using focused ion beam, scanning transmission electron microscopy, and energy-dispersive x-ray spectroscopy. The results show that the macrodefect originates from a void, which in turn is associated with a pit on the CdZnTe substrate.

  2. HgCdTe MWIR Back-Illuminated Electron-Initiated Avalanche Photodiode Arrays

    NASA Astrophysics Data System (ADS)

    Reine, M. B.; Marciniec, J. W.; Wong, K. K.; Parodos, T.; Mullarkey, J. D.; Lamarre, P. A.; Tobin, S. P.; Gustavsen, K. A.; Williams, G. M.

    2007-08-01

    This paper reports data for back-illuminated planar n-on-p HgCdTe electron-initiated avalanche photodiode (e-APD) 4 × 4 arrays with large unit cells (250 × 250 μm2). The arrays were fabricated from p-type HgCdTe films grown by liquid phase epitaxy (LPE) on CdZnTe substrates. The arrays were bump-mounted to fanout boards and characterized in the back-illuminated mode. Gain increased exponentially with reverse bias voltage, and the gain versus bias curves were quite uniform from element to element. The maximum gain measured was 648 at -11.7 V for a cutoff wavelength of 4.06 μm at 160 K. For the same reverse-bias voltage, the gains measured at 160 K for elements with two different cutoff wavelengths (3.54 μm and 4.06 μm at 160 K) show an exponential increase with increasing cutoff wavelength, in agreement with Beck’s empirical model for gain versus voltage and cutoff wavelength in HgCdTe e-APDs. Spot scan data show that both the V = 0 response and the gain at V = -5.0 V are spatially uniform over the large junction area. To the best of our knowledge, these are the first spot scan data for avalanche gain ever reported for HgCdTe e-APDs. Capacitance versus voltage data are consistent with an ideal abrupt junction having a donor concentration equal to the indium concentration in the LPE film.

  3. A dual-color fluorescent biosensing platform based on WS2 nanosheet for detection of Hg(2+) and Ag(.).

    PubMed

    Zuo, Xianwei; Zhang, Huige; Zhu, Qian; Wang, Weifeng; Feng, Jie; Chen, Xingguo

    2016-11-15

    In this work, an effective dual-color fluorescent biosensing platform based on WS2 nanosheets was developed for homogeneous detection of Hg(2+) and Ag(+). This sensing platform was constituted by exploiting the fluorescence quenching ability of WS2 nanosheets and the interactions between WS2 nanosheets and DNA molecules. In the absence of additional any masking agents, the biosensor could achieve detection of Hg(2+) and Ag(+) in the same solution by monitoring fluorescence intensity changes at 525nm and 583nm, respectively. Hg(2+) and Ag(+) were selectively detected in the concentration range from 6.0-650.0nM and 5.0-1000.0nM, respectively, with the detection limit of 3.3nM and 1.2nM, respectively. It was also demonstrated that the WS2 nanosheet-based sensing platform was suitable for the simultaneous detection of Hg(2+) and Ag(+) in drinking water, serum and cell lysate samples. Moreover, the possible mechanism of fluorescence quenching by WS2 nanosheets was revealed to be related to static quenching, dynamic quenching, and Fo¨rster resonant energy transfer (FRET). This work extended the application of WS2 nanosheets to environmental monitoring and medical diagnosis. PMID:27208479

  4. Ultrasensitive electrochemical sensor for Hg(2+) by using hybridization chain reaction coupled with Ag@Au core-shell nanoparticles.

    PubMed

    Li, Zongbing; Miao, Xiangmin; Xing, Ke; Peng, Xue; Zhu, Aihua; Ling, Liansheng

    2016-06-15

    A novel electrochemical biosensor for Hg(2+) detection was reported by using DNA-based hybridization chain reaction (HCR) coupled with positively charged Ag@Au core-shell nanoparticles ((+)Ag@Au CSNPs) amplification. To construct the sensor, capture probe (CP ) was firstly immobilized onto the surface of glass carbon electrode (GCE). In the presence of Hg(2+), the sandwiched complex can be formed between the immobilized CP on the electrode surface and the detection probe (DP) modified on the gold nanoparticles (AuNPs) based on T-Hg(2+)-T coordination chemistry. The carried DP then opened two ferrocene (Fc) modified hairpin DNA (H1 and H2) in sequence and propagated the happen of HCR to form a nicked double-helix. Numerous Fc molecules were formed on the neighboring probe and produced an obvious electrochemical signal. Moreover, (+)Ag@Au CSNPs were assembly onto such dsDNA polymers as electrochemical signal enhancer. Under optimal conditions, such sensor presents good electrochemical responses for Hg(2+) detection with a detection limit of 3.6 pM. Importantly, the methodology has high selectivity for Hg(2+) detection. PMID:26852203

  5. A dry method to synthesize dendritic Ag2Se nanostructures utilizing CdSe quantum dots and Ag thin films.

    PubMed

    Hu, Lian; Zhang, Bingpo; Xu, Tianning; Li, Ruifeng; Wu, Huizhen

    2015-01-01

    Dendritic Ag2Se nanostructures are synthesized in a dry environment by UV irradiating the hybrids composed of CdSe quantum dots (QDs) and silver (Ag). UV irradiation on CdSe QDs induces a photooxidation effect on the QD surface and leads to the formation of SeO2 components. Then SeO2 reacts with the Ag atoms in either Ag film or QD layer to produce the Ag2Se. The growth mechanism of Ag2Se dendrites on solid Ag films is explored and explained by a diffusion limited aggregation model in which the QD layer provides enough freedom for Ag2Se motion. Since the oxidation of the CdSe QDs is the critical step for the Ag2Se dendrites formation this dry chemical interaction between QDs and Ag film can be applied in the study of the QD surface chemical properties. With this dry synthesis method, the Ag2Se dendrites can also be facilely formed at the designed area on Ag substrates. PMID:25483981

  6. A dry method to synthesize dendritic Ag2Se nanostructures utilizing CdSe quantum dots and Ag thin films

    NASA Astrophysics Data System (ADS)

    Hu, Lian; Zhang, Bingpo; Xu, Tianning; Li, Ruifeng; Wu, Huizhen

    2015-01-01

    Dendritic Ag2Se nanostructures are synthesized in a dry environment by UV irradiating the hybrids composed of CdSe quantum dots (QDs) and silver (Ag). UV irradiation on CdSe QDs induces a photooxidation effect on the QD surface and leads to the formation of SeO2 components. Then SeO2 reacts with the Ag atoms in either Ag film or QD layer to produce the Ag2Se. The growth mechanism of Ag2Se dendrites on solid Ag films is explored and explained by a diffusion limited aggregation model in which the QD layer provides enough freedom for Ag2Se motion. Since the oxidation of the CdSe QDs is the critical step for the Ag2Se dendrites formation this dry chemical interaction between QDs and Ag film can be applied in the study of the QD surface chemical properties. With this dry synthesis method, the Ag2Se dendrites can also be facilely formed at the designed area on Ag substrates.

  7. Investigation of magnetoabsorption at different temperatures in HgTe/CdHgTe quantum-well heterostructures in pulsed magnetic fields

    SciTech Connect

    Platonov, V. V.; Kudasov, Yu. B.; Makarov, I. V.; Maslov, D. A.; Surdin, O. M.; Zholudev, M. S.; Ikonnikov, A. V.; Gavrilenko, V. I.; Mikhailov, N. N.; Dvoretsky, S. A.

    2015-12-15

    The magnetoabsorption in magnetic fields as high as 40 T is investigated at T > 77 K in HgTe/CdHgTe quantum-well heterostructures (d{sub QW} ≈ 8 nm). The spectra reveal two lines associated both with intraband transition from the lower Landau level in the conduction band and with interband transition. It is shown that the band structure in these systems changes from inverted to normal with increasing temperature.

  8. A Novel Method to Obtain Higher Deposition Rates of CdTe Using Low Temperature LPCVD for Surface Passivation of HgCdTe

    NASA Astrophysics Data System (ADS)

    Banerjee, Sneha; Dahal, Rajendra; Bhat, Ishwara B.

    2015-09-01

    The deposition rate of CdTe passivation films has been increased greatly by the implementation of a novel design of a graphite cracker cell. This cracker cell, consisting of an integrated diffuser, facilitates the efficient cracking of precursors. CdTe deposition rate has been increased from ~50 nm/h (without any cracker cell) to ~420 nm/h using this novel experimental set-up. H2 flow through the main gas flow line has been increased to obtain a progressive increase in deposition rates. CdTe deposited on high aspect ratio HgCdTe samples showed adequate conformal coverage on the side walls and also on the bottom of the trenches. Microwave photoconductive decay measurements were done on planar and patterned HgCdTe substrates at 77 K to extract the minority carrier lifetimes. There was a significant improvement in the lifetime of planar HgCdTe samples after CdTe passivation, though patterned HgCdTe samples showed a minor improvement. An additional annealing step was conducted at 250°C for 20 min in the presence of H2 after the deposition of CdTe passivation films. Minority carrier lifetimes improved further post-annealing, probably due to the formation of a graded interface between CdTe and HgCdTe.

  9. Structural and optical properties of core–shell Ag{sub 2}S/HgS nanostructures

    SciTech Connect

    Basyach, Priyanka; Choudhury, Amarjyoti

    2013-07-15

    Graphical abstract: - Highlights: • Core–shell Ag{sub 2}S/HgS nanostructures are successfully synthesized. • The particle size and the structure were confirmed through TEM images. • The absorbance analysis reveals red shift with increasing shell concentration. • A transition from TYPE 1 to TYPE 2 core–shell nanostructure is observed. - Abstract: Here we report on a two-step synthesis route for fabrication of core–shell Ag{sub 2}S/HgS nanostructures. Nanoscale Ag{sub 2}S semiconductors are prepared by a standard redox reaction using AgNO{sub 3} and CS{sub 2} as the reactants in PVP. HgS layers are developed on Ag{sub 2}S cores through S-S bonding at the interface separating the two systems. The properties of these core–shell nanostructures are studied via various spectroscopic and microscopic tools like UV–Vis absorption spectra, photoluminescence spectra, X-ray diffraction pattern and transmission electron microscopic images. Change in optical properties is observed while varying the shell thickness in the sample. A detailed study on the luminescence properties reveal transition from TYPE 1 to TYPE 2 core–shell nanostructures is observed with increasing shell thickness.

  10. Extending the operating temperature, wavelength and frequency response of HgCdTe heterodyne detectors

    NASA Technical Reports Server (NTRS)

    Spears, D. L.

    1980-01-01

    Near ideal optical heterodyne performance was obtained at GHz IF frequencies in the 10 micrometer wavelength region with liquid nitrogen cooled HgCdTe photodiodes. Heterodyne NEP's as low as 2.7 x 10 to the minus 20th power W/Hz at 100MHz, 5.4 x 10 to the minus 20th power W/Hz at 1.5 GHz, and 9.4 x 19 to the minus 20th power W/Hz at 3 GHz were achieved. Various physical phenomena which occur within a photodiode and affect heterodyne operation were examined in order to assess the feasibility of extending the operating temperature, wavelength, and frequency response of these HgCdTe photomixers.

  11. The structural and electronic properties of amorphous HgCdTe from first-principles calculations

    NASA Astrophysics Data System (ADS)

    Zhao, Huxian; Chen, Xiaoshuang; Lu, Jianping; Shu, Haibo; Lu, Wei

    2014-01-01

    Amorphous mercury cadmium telluride (a-MCT) model structures, with x being 0.125 and 0.25, are obtained from first-principles calculations. We generate initial structures by computation alchemy method. It is found that most atoms in the network of amorphous structures tend to be fourfold and form tetrahedral structures, implying that the chemical ordered continuous random network with some coordination defects is the ideal structure for a-MCT. The electronic structure is also concerned. The gap is found to be 0.30 and 0.26 eV for a-Hg0.875Cd0.125Te and a-Hg0.75Cd0.25Te model structures, independent of the composition. By comparing with the properties of crystalline MCT with the same composition, we observe a blue-shift of energy band gap. The localization of tail states and its atomic origin are also discussed.

  12. Linear Mode HgCdTe Avalanche Photodiodes for Photon Counting Applications

    NASA Technical Reports Server (NTRS)

    Sullivan, William, III; Beck, Jeffrey; Scritchfield, Richard; Skokan, Mark; Mitra, Pradip; Sun, Xiaoli; Abshire, James; Carpenter, Darren; Lane, Barry

    2015-01-01

    An overview of recent improvements in the understanding and maturity of linear mode photon counting with HgCdTe electron-initiated avalanche photodiodes is presented. The first HgCdTe LMPC 2x8 format array fabricated in 2011 with 64 micron pitch was a remarkable success in terms of demonstrating a high single photon signal to noise ratio of 13.7 with an excess noise factor of 1.3-1.4, a 7 ns minimum time between events, and a broad spectral response extending from 0.4 micron to 4.2 micron. The main limitations were a greater than 10x higher false event rate than expected of greater than 1 MHz, a 5-7x lower than expected APD gain, and a photon detection efficiency of only 50% when greater than 60% was expected. This paper discusses the reasons behind these limitations and the implementation of their mitigations with new results.

  13. Convective Influence on Radial Segregation During Unidirectional Solidification of the Binary Alloy HgCdTe

    NASA Technical Reports Server (NTRS)

    Watring, D. A.; Gillies, D. C.; Lehoczky, S. L.; Szofran, F. R.; Alexander, H.

    1996-01-01

    In order to simulate the space environment for basic research into the crystal growth mechanism, Hg(0.8)Cd(0.2)Te crystals were grown by the vertical Bridgman-Stockbarger method in the presence of an applied axial magnetic field. The influence of convection, by magneto hydrodynamic damping, on mass transfer in the melt and segregation at the solid-liquid interface was investigated by measuring the axial and radial compositional variations in the grown samples. The reduction of convective mixing in the melt through the application of the magnetic field is found to have a large effect on radial segregation and interface morphology in the grown crystals. Direct comparisons are made with a Hg(0.8)Cd(0.2)Te crystal grown without field and also in the microgravity environment of space during the second United States Microgravity Payload Mission (USMP-2).

  14. LWIR HgCdTe barrier photodiode with Auger-suppression

    NASA Astrophysics Data System (ADS)

    Kopytko, M.; Kębłowski, A.; Gawron, W.; Pusz, W.

    2016-03-01

    This paper reports on advanced metalorganic chemical vapor deposition (MOCVD) grown HgCdTe barrier photodiodes for long wave infrared (LWIR) application. The n+p+Bp πN+ device is a concept of a specific barrier bandgap architecture integrated with Auger-suppression as a good solution for high operating temperature (HOT) infrared detectors with high detectivity and sub-nanosecond time constant. The design approach, growth aspects and detector characterization of HgCdTe n+p+Bp πN+ barrier photodiodes operated with thermoelectric cooling (230 K) have been discussed in the paper. The influence of absorber thickness on the device’s properties has been analyzed in the experiment.

  15. Absolute linearity measurements on a PV HgCdTe detector in the infrared

    NASA Astrophysics Data System (ADS)

    Theocharous, Evangelos

    2012-04-01

    The linearity-of-response characteristics of a photovoltaic (PV) HgCdTe detector were investigated at a number of wavelengths in the infrared, using the NPL linearity of detector response characterization facility. The measurements were performed with the test detector operating under conditions identical to those in which the detectors will be used in typical infrared radiometric applications. The deviation from linearity in the generated photocurrent was shown to be strongly dependent on the area of the detector being illuminated. Plots of the linearity factor versus generated photocurrent for different illuminated wavelengths were shown to overlap. The linearity factor was shown to be a function of the photon irradiance of the illuminating beam. This behaviour was similar to that exhibited by photoconductive (PC) HgCdTe detectors, indicating that Auger recombination was the dominant source of the deviation from linearity observed in the test detector.

  16. Thermal stability of atomic layer deposition Al2O3 film on HgCdTe

    NASA Astrophysics Data System (ADS)

    Zhang, P.; Sun, C. H.; Zhang, Y.; Chen, X.; He, K.; Chen, Y. Y.; Ye, Z. H.

    2015-06-01

    Thermal stability of Atomic Layer Deposition Al2O3 film on HgCdTe was investigated by Al2O3 film post-deposition annealing treatment and Metal-Insulator-Semiconductor device low-temperature baking treatment. The effectiveness of Al2O3 film was evaluated by measuring the minority carrier lifetime and capacitance versus voltage characteristics. After annealing treatment, the minority carrier lifetime of the HgCdTe sample presented a slight decrease. Furthermore, the fixed charge density and the slow charge density decreased significantly in the annealed MIS device. After baking treatment, the fixed charge density and the slow charge density of the unannealed and annealed MIS devices decreased and increased, respectively.

  17. HgCdTe heterostructures on Si (310) substrates for midinfrared focal plane arrays

    SciTech Connect

    Yakushev, M. V. Brunev, D. V.; Varavin, V. S.; Vasilyev, V. V.; Dvoretskii, S. A.; Marchishin, I. V.; Predein, A. V.; Sabinina, I. V.; Sidorov, Yu. G.; Sorochkin, A. V.

    2011-03-15

    Results of studies of the molecular beam epitaxial growth of HgCdTe alloys on Si substrates as large as 100 mm in diameter are presented. Optimum conditions for obtaining HgCdTe/Si(310) heterostructures of the device quality for the spectral range of 3-5 {mu}m are determined. The results of measurements and discussion of photoelectric parameters of an infrared photodetector of a format of 320 Multiplication-Sign 256 elements with a step of 30 {mu}m based on a hybrid assembly of a matrix photosensitive cell with a Si multiplexer are presented. A high stability of photodetector parameters to thermocycling from room temperature to liquid-nitrogen temperature is shown.

  18. Directional solidification and characterization of Hg(1-x)Cd(x)Te alloys

    NASA Technical Reports Server (NTRS)

    Lehoczky, S. L.; Szofran, F. R.

    1982-01-01

    A series of Hg(1-x)Cd(x)Te alloy crystals was grown by high temperature gradient directional solidification at furnace translation rates ranging from 0.068 to 1.12 microns/s. For several ingots, the measured longitudinal compositional profiles were fitted to theoretical profiles to estimate the magnitude of D, the liquid HgTe-CdTe interdiffusion coefficient. The best-fit value of D was about 550,000 sq cm/s. The majority of the ingots showed significant radial compositional variations along the growth axis. These variations are attributed, at least in part, to fluid flows ahead of the growth interface. The results are discussed in terms of the heat transfer characteristics of the alloy/ampule/furnace system, and on the effects of these characteristics on the shape and stability of the growth interface in a 1-g environment.

  19. Investigation of vaporization and condensation processes of thin layers of CdHgTe from laser erosion plasma in Hg atmosphere

    NASA Astrophysics Data System (ADS)

    Kotlyarchuk, B. K.; Popovych, D. I.; Savchuk, V. K.; Savitsky, V. G.

    1996-04-01

    The article sets out to investigate spatial-time and spectral characteristics of laser erosive vapour-plasma torch (EVT), formed at the time of vaporization of mercury chalcogenides targets. Its influence on the synthesis processes and electrophysical properties of HgTe and CdHgTe layers, condensed in mercury vapour, is described. It is shown, that the laser radiation flux density and Hg vapour pressure in the reaction chamber are dominating factors, which determine the character of gas-dynamic spread, EVT composition and electrophysical characteristics of condensed mercury chalcogenides layers.

  20. Intrinsic spin hall effect induced by quantum phase transition in HgCdTe quantum wells.

    PubMed

    Yang, Wen; Chang, Kai; Zhang, Shou-Cheng

    2008-02-01

    The spin Hall effect can be induced by both extrinsic impurity scattering and intrinsic spin-orbit coupling in the electronic structure. The HgTe/CdTe quantum well has a quantum phase transition where the electronic structure changes from normal to inverted. We show that the intrinsic spin Hall effect of the conduction band vanishes on the normal side, while it is finite on the inverted side. By tuning the Cd content, the well width, or the bias electric field across the quantum well, the intrinsic spin Hall effect can be switched on or off and tuned into resonance under experimentally accessible conditions. PMID:18352404

  1. Magnetic activation of bipolar plasmas in HgTe-CdTe superlattices

    NASA Astrophysics Data System (ADS)

    Meyer, J. R.; Hoffman, C. A.; Bartoli, F. J.; Wojtowicz, T.; Dobrowolska, M.; Furdyna, J. K.; Chu, X.; Faurie, J. P.; Ram-Mohan, L. R.

    1991-08-01

    It is shown theoretically that in semimetallic HgTe-CdTe superlattices, there is a critical magnetic field above which minority carriers with density proportional to B-Bcrit are expected to coexist with majority carriers in the zero-temperature limit. Experimental confirmation of the magnetically activated bipolar plasma is provided by low-temperature magneto-optical data showing the emergence of minority holes in an n-type superlattice whenever B>Bcrit.

  2. Interface roughness limited electron mobility in HgTe-CdTe superlattices

    NASA Astrophysics Data System (ADS)

    Meyer, J. R.; Arnold, D. J.; Hoffman, C. A.; Bartoli, F. J.

    1991-06-01

    It is demonstrated that interface roughness is the dominant low-temperature scattering mechanism for electrons in HgTe-CdTe superlattices with thin wells. Not only do the experimental mobilities follow the expected d6(W) dependence, but the observed temperature dependence is accurately reproduced by theory when the treatment of interface roughness scattering is generalized for narrow-gap superlattices. The fits to data yield roughness correlation lengths in the range 60-200 A.

  3. MBE based HgCdTe APDs and 3D LADAR sensors

    NASA Astrophysics Data System (ADS)

    Jack, Michael; Asbrock, Jim; Bailey, Steven; Baley, Diane; Chapman, George; Crawford, Gina; Drafahl, Betsy; Herrin, Eileen; Kvaas, Robert; McKeag, William; Randall, Valerie; De Lyon, Terry; Hunter, Andy; Jensen, John; Roberts, Tom; Trotta, Patrick; Cook, T. Dean

    2007-04-01

    Raytheon is developing HgCdTe APD arrays and sensor chip assemblies (SCAs) for scanning and staring LADAR systems. The nonlinear characteristics of APDs operating in moderate gain mode place severe requirements on layer thickness and doping uniformity as well as defect density. MBE based HgCdTe APD arrays, engineered for high performance, meet the stringent requirements of low defects, excellent uniformity and reproducibility. In situ controls for alloy composition and substrate temperature have been implemented at HRL, LLC and Raytheon Vision Systems and enable consistent run to run results. The novel epitaxial designed using separate absorption-multiplication (SAM) architectures enables the realization of the unique advantages of HgCdTe including: tunable wavelength, low-noise, high-fill factor, low-crosstalk, and ambient operation. Focal planes built by integrating MBE detectors arrays processed in a 2 x 128 format have been integrated with 2 x 128 scanning ROIC designed. The ROIC reports both range and intensity and can detect multiple laser returns with each pixel autonomously reporting the return. FPAs show exceptionally good bias uniformity <1% at an average gain of 10. Recent breakthrough in device design has resulted in APDs operating at 300K with essentially no excess noise to gains in excess of 100, low NEP <1nW and GHz bandwidth. 3D LADAR sensors utilizing these FPAs have been integrated and demonstrated both at Raytheon Missile Systems and Naval Air Warfare Center Weapons Division at China Lake. Excellent spatial and range resolution has been achieved with 3D imagery demonstrated both at short range and long range. Ongoing development under an Air Force Sponsored MANTECH program of high performance HgCdTe MBE APDs grown on large silicon wafers promise significant FPA cost reduction both by increasing the number of arrays on a given wafer and enabling automated processing.

  4. Monte Carlo Treatment of Displacement Damage in Bandgap Engineered HgCdTe Detectors

    NASA Technical Reports Server (NTRS)

    Fodness, Bryan C.; Marshall, Paul W.; Reed, Robert A.; Jordan, Thomas M.; Pickel, James C.; Jun, Insoo; Xapsos, Michael A.; Burke, Edward A.

    2003-01-01

    The conclusion are: 1. Description of NIEL calculation for short, mid, and longwave HgCdTe material compositions. 2. Full recoil spectra details captured and analyzed Importance of variance in high Z materials. 3. Can be applied directly to calculate damage distributions in arrays. 4. Future work will provide comparisons of measured array damage with calculated NIEL and damage energy distributions. 5. Technique to assess the full recoil spectrum behavior is extendable to other materials.

  5. Study to improve the low frequency noise characteristics of (Hg,Cd)Te detectors

    NASA Technical Reports Server (NTRS)

    Broudy, R. M.

    1973-01-01

    Efforts made to identify and reduce the sources of l/f noise in 15 micron n-type (Hg,Cd)Te detectors operating at 77 K are reported. The investigation covered: evaluation of the influence of material properties and detector processing techniques, determination of the relative importance of surfaces, volumes, regions, and contracts, and generation of theoretical models for guidance of the experimental work.

  6. Numerical simulation of heat transfer during the crystal growth of HgCdTe alloys

    NASA Technical Reports Server (NTRS)

    Dakhoul, Y. M.; Farmer, R.; Lehoczky, S. L.; Szofran, F. R.

    1988-01-01

    The effects of growth parameters on the thermal distribution during a Bridgman-Stockbarger-type crystal growth of HgCdTe alloys using short gradient zones are analyzed numerically. The analysis takes into account the change in the thermophysical properties upon freezing and considers both the temperature and composition dependences of the properties as well as translation rate effects. The calculated results compare favorably with previously published empirical results.

  7. On the nature of alloying in HgTeCdTe solid solutions at low temperatures from electrode potential measurements

    NASA Astrophysics Data System (ADS)

    Yadava, R. D. S.; Warrier, A. V. R.

    1991-05-01

    Electrode potentials at HgTe, CdTe and Hg 0.8Cd 0.2Te in 0.1 M KOH solution are measured at 20°C with reference to a saturated calomel electrode. A model for the interfacial electron transfer reaction in equilibrium is proposed. An analysis is presented to show that the alloying of HgTe and CdTe at low temperatures is non-ideal. The enthalpy of formation of the x = 0.2 alloy from the pure component phases in solid state at 20°C is found to be +2.1 kcal mol -1.

  8. Development of a (Hg, Cd)Te photodiode detector, Phase 2. [for 10.6 micron spectral region

    NASA Technical Reports Server (NTRS)

    1972-01-01

    High speed sensitive (Hg,Cd)Te photodiode detectors operating in the 77 to 90 K temperature range have been developed for the 10.6 micron spectral region. P-N junctions formed by impurity (gold) diffusion in p-type (Hg, Cd) Te have been investigated. It is shown that the bandwidth and quantum efficiency of a diode are a constant for a fixed ratio of mobility/lifetime ratio of minority carriers. The minority carrier mobility and lifetime uniquely determine the bandwidth and quantum efficiency and indicate the shallow n on p (Hg,Cd) Te diodes are preferable as high performance, high frequency devices.

  9. Occurrence of heavy metals (Hg, Cd, and Pb) and polychlorinated biphenyls in salted anchovies.

    PubMed

    Storelli, M M; Giachi, L; Giungato, D; Storelli, A

    2011-05-01

    The most popular brands of salted anchovies (Engraulis encrasicolus) from the Mediterranean Sea and Atlantic Ocean were purchased from several Italian supermarkets and grocery stores. Heavy metal (Hg, Cd, and Pb) and polychlorinated biphenyl (PCB) levels were determined and assessed by comparing the concentrations in these samples with the maximum permissible limits set by the European Union (Reg EC 629/2008 and Reg EC 1881/2006 [Off. J. Eur. Union L 173:3-9 and 364:5-24, respectively]). The Hg and Cd levels were higher than those of Pb in all samples examined. For Hg and Pb, the concentrations recorded in this study were below the authorized limits, while an appreciable percentage of samples from both locations (Mediterranean Sea, 35%, and Atlantic Ocean, 25%) showed Cd levels exceeding the threshold recommended for human consumption. Concerning PCBs, the results of principal component analysis showed that samples from the two different marine areas appeared to be discriminate, with Mediterranean anchovies more contaminated than the others, in spite of their lower lipid content. However, anchovy samples from both locations had dioxinlike-PCB levels (Mediterranean Sea, 0.011 pg World Health Organization toxic equivalency [WHO-TEQ] g(-1), wet weight, and Atlantic Ocean, 0.007 pg WHO-TEQ g(-1), wet weight) that were below the WHO-TEQ maximum concentration set by European regulation. The results of this study will help in generating data needed for the assessment of heavy metal and PCB intake from this food. PMID:21549051

  10. Single-Photon-Sensitive HgCdTe Avalanche Photodiode Detector

    NASA Technical Reports Server (NTRS)

    Huntington, Andrew

    2013-01-01

    The purpose of this program was to develop single-photon-sensitive short-wavelength infrared (SWIR) and mid-wavelength infrared (MWIR) avalanche photodiode (APD) receivers based on linear-mode HgCdTe APDs, for application by NASA in light detection and ranging (lidar) sensors. Linear-mode photon-counting APDs are desired for lidar because they have a shorter pixel dead time than Geiger APDs, and can detect sequential pulse returns from multiple objects that are closely spaced in range. Linear-mode APDs can also measure photon number, which Geiger APDs cannot, adding an extra dimension to lidar scene data for multi-photon returns. High-gain APDs with low multiplication noise are required for efficient linear-mode detection of single photons because of APD gain statistics -- a low-excess-noise APD will generate detectible current pulses from single photon input at a much higher rate of occurrence than will a noisy APD operated at the same average gain. MWIR and LWIR electron-avalanche HgCdTe APDs have been shown to operate in linear mode at high average avalanche gain (M > 1000) without excess multiplication noise (F = 1), and are therefore very good candidates for linear-mode photon counting. However, detectors fashioned from these narrow-bandgap alloys require aggressive cooling to control thermal dark current. Wider-bandgap SWIR HgCdTe APDs were investigated in this program as a strategy to reduce detector cooling requirements.

  11. Update on Linear Mode Photon Counting with the HgCdTe Linear Mode Avalanche Photodiode

    NASA Technical Reports Server (NTRS)

    Beck, Jeffrey D.; Kinch, Mike; Sun, Xiaoli

    2014-01-01

    The behavior of the gain-voltage characteristic of the mid-wavelength infrared cutoff HgCdTe linear mode avalanche photodiode (e-APD) is discussed both experimentally and theoretically as a function of the width of the multiplication region. Data are shown that demonstrate a strong dependence of the gain at a given bias voltage on the width of the n- gain region. Geometrical and fundamental theoretical models are examined to explain this behavior. The geometrical model takes into account the gain-dependent optical fill factor of the cylindrical APD. The theoretical model is based on the ballistic ionization model being developed for the HgCdTe APD. It is concluded that the fundamental theoretical explanation is the dominant effect. A model is developed that combines both the geometrical and fundamental effects. The model also takes into account the effect of the varying multiplication width in the low bias region of the gain-voltage curve. It is concluded that the lower than expected gain seen in the first 2 × 8 HgCdTe linear mode photon counting APD arrays, and higher excess noise factor, was very likely due to the larger than typical multiplication region length in the photon counting APD pixel design. The implications of these effects on device photon counting performance are discussed.

  12. Density, Electrical Conductivity and Viscosity of Hg(0.8)Cd(0.2)Te Melt

    NASA Technical Reports Server (NTRS)

    Li, C.; Scripa, R. N.; Ban, H.; Su, C.-H.; Lehoczky, S. L.

    2004-01-01

    The density, viscosity, and electrical conductivity of Hg(0.8)Cd(0.2)Te melt were measured as a function of temperature. A pycnometric method was used to measure the melt density in the temperature range of 1072 to 1122 K. The viscosity and electrical conductivity were determined using a transient torque method from 1068 to 1132 K. The density result from this study is within 0.3% of the published data. However, the current viscosity result is approximately 30% lower than the existing data. The electrical conductivity of Hg(0.8)Cd(0.2)Te melt as a function of temperature, which is not available in the literature, is also determined. The analysis of the temperature dependent electrical conductivity and the relationship between the kinematic viscosity and density indicated that the structure of the melt appeared to be homogeneous when the temperature was above 1090 K. A structural transition occurred in the Hg(0.8)Cd(0.2)Te melt as the temperature was decreased to below 1090 K

  13. Phytoremediation of Hg and Cd from industrial effluents using an aquatic free floating macrophyte Azolla pinnata.

    PubMed

    Rai, Prabhat Kumar

    2008-01-01

    The level of heavy metal pollution in Singrauli, an industrial region in India, was assessed and the phytoremediation capacity of a small water fern, Azolla pinnata R.BR (Azollaceae), was observed to purify waters polluted by two heavy metals, i.e., mercury (Hg) and cadmium (Cd) under a microcosm condition. Azolla pinnata is endemic to India and is an abundant and easy-growing free-floating water fern usually found in the rice fields, polluted ponds, and reservoirs of India. The fern was grown in 24 40-L aquariums containing Hg2+ and Cd2+ ions each in concentrations of 0.5, 1.0, and 3.0 mgL(-1) during the course of this study. The study revealed an inhibition of Azolla pinnata growth by 27.0-33.9% with the highest in the presence of Hg (II) ions at 0.5 mgL(-1) in comparison to the control After 13 days of the experiment, metal contents in the solution were decreased up to 70-94%. In the tissues of Azolla pinnata, the concentration of selected heavy metals during investigation was recorded between 310 and 740 mgKg(-1) dry mass, with the highest levelfoundfor Cd (II) treatment at 3.0 mgL(-1) containing a metal solution. PMID:19260224

  14. Traces of HgCdTe Defects as Revealed by Etch Pits

    NASA Astrophysics Data System (ADS)

    Yang, J. R.; Cao, X. L.; Wei, Y. F.; He, L.

    2008-09-01

    The characteristics of defects in HgCdTe liquid-phase epitaxy (LPE) epilayers were investigated by using Schaake’s and Chen’s etches. By tracking the etch pits (EP), two kinds of threading dislocations with <110> and <211> orientations were observed for the first time in HgCdTe LPE epilayers. They are ascribed to perfect 60 deg dislocation and Shockley partial screw dislocations. The kinds of dislocation etch pits revealed by Schaake’s and Chen’s etches were experimentally confirmed to be correlated one-to-one. In addition to the threading dislocation etch pits, another kind of etch pits without the threading feature was also observed using both etch methods. The density of the nonthreading etch pits increases in the regions close to epilayer-substrate interfaces, scratched areas, and melt droplets. The etch pit density (EPD) varies from 104 cm-2 to 107 cm-2 from sample to sample or at different places on the same sample, indicating that they are correlated to stresses and should be considered in the assessment of HgCdTe epilayers.

  15. Toxic metals (Hg, Cd, and Pb) in fishery products imported into Italy: suitability for human consumption.

    PubMed

    Storelli, Maria M; Normanno, Giovanni; Barone, Grazia; Dambrosio, Angela; Errico, Luigi; Garofalo, Rita; Giacominelli-Stuffler, Roberto

    2012-01-01

    Mercury, cadmium, and lead concentrations were determined in various fishery products (fishes, cephalopod molluscs, and crustaceans) imported into Italy from many European and non-European coastal countries. Considerable differences were found in the concentrations of these metals among the products tested. The highest mean Hg concentration was found in fishes (0.21 μg g(-1) wet weight), whereas cephalopods had the highest mean Cd concentration (0.35 μg g(-1) wet weight). Swordfish (0.80 μg g(-1) wet weight), longtail tuna (0.53 μg g(-1) wet weight), and thornback ray (0.52 μg g(-1) wet weight) had the highest concentrations of Hg, whereas maximum Cd concentrations were found in samples of common cuttlefish (0.85 μg g(-1) wet weight) and common octopus (0.64 μg g(-1) wet weight). The majority of the samples analyzed were in compliance with European Union legislation, except for a few cases. The calculated mean weekly intakes of Hg, Cd, and Pb through consumption of the fishery products tested were all below the legislated respective provisional tolerable weekly intakes. In general, the samples analyzed were considered safe to eat with regard to the metal concentrations found and the allowable intakes based on legislation. Nevertheless, the consumption of some species may be of significant importance for consumer health. PMID:22221377

  16. Interactions between photoexcited NIR emitting CdHgTe quantum dots and graphene oxide

    NASA Astrophysics Data System (ADS)

    Jagtap, Amardeep M.; Varade, Vaibhav; Konkena, Bharathi; Ramesh, K. P.; Chatterjee, Abhijit; Banerjee, Arup; Pendyala, Naresh Babu; Koteswara Rao, K. S. R.

    2016-02-01

    Hydrothermally grown mercury cadmium telluride quantum dots (CdHgTe QDs) are decorated on graphene oxide (GO) sheets through physisorption. The structural change of GO through partial reduction of oxygen functional groups is observed with X-ray photoelectron spectroscopy in GO-QDs composites. Raman spectroscopy provides relatively a small change (˜1.1 times) in D/G ratio of band intensity and red shift in G band from 1606 cm-1 to 1594 cm-1 in GO-CdHgTe QDs (2.6 nm) composites, which indicates structural modification of GO network. Steady state and time resolved photoluminescence (PL) spectroscopy shows the electronic interactions between photoexcited near infrared emitting CdHgTe QDs and GO. Another interesting observation is PL quenching in the presence of GO, and it is quite effective in the case of smaller size QDs (2.6 nm) compared to the larger size QDs (4.2 nm). Thus, the observed PL quenching is attributed to the photogenerated electron transfer from QDs to GO. The photoexcited electron transfer rate decreases from 2.2 × 109 to 1.5 × 108 s-1 with increasing particle size from 2.6 to 4.2 nm. Photoconductivity measurements on QDs-GO composite devices show nearly 3 fold increase in the current density under photo-illumination, which is a promising aspect for solar energy conversion and other optoelectronic applications.

  17. Temperature dependence characteristics of dark current for arsenic doped LWIR HgCdTe detectors

    NASA Astrophysics Data System (ADS)

    Wang, Jun; Chen, Xiaoshuang; Hu, Weida; Ye, Zhenghua; Lin, Chun; Hu, Xiaoning; Guo, Jin; Xie, Feng; Zhou, Jie; Liang, Jian; Wang, Xiaofang; Lu, Wei

    2013-11-01

    Resistance-voltage (R-V) curves of arsenic doped long-wavelength infrared (LWIR) Mercury Cadmium Telluride (HgCdTe) photodiodes were measured in the temperature range of 59-92 K. The dark current characteristics of HgCdTe junction diode are presented by using a simultaneous-mode nonlinear fitting method. The observed R-V characteristics have been shown in agreement with the theoretical calculation by taking into account the contributions: (i) diffusion mechanism (Rdiff), (ii) generation-recombination mechanism (Rgr) in the depletion region, (iii) trap-assisted tunneling mechanism (Rtat), and (iv) band-to-band tunneling mechanism (Rbbt). Six characteristic parameters as function of temperature are extracted from the measured current-voltage (I-V) curves by considering the dominant current mechanisms under different bias levels. The fitted current components under different temperatures show that, as the temperature rises, the contribution to the dominant dark current component around maximum dynamic resistance range is changed from the trap-assisted tunneling and diffusion currents to the generation recombination effect. This change indicates that the dark current component may mainly be caused by the generation recombination current, which limits the performance of arsenic doped LWIR HgCdTe detectors.

  18. Thermophysical Properties and Structural Transition of Hg(0.8)Cd(0.2)Te Melt

    NASA Technical Reports Server (NTRS)

    Li, C.; Scripa, R. N.; Ban, H.; Lin, B.; Su, C.; Lehoczky, S. L.

    2004-01-01

    Thermophysical properties, namely, density, viscosity, and electrical conductivity of Hg(sub o.8)Cd(sub 0.2)Te melt were measured as a function of temperature. A pycnometric method was used to measure the melt density in the temperature range of 1072 to 1122 K. The viscosity and electrical conductivity were simultaneously determined using a transient torque method from 1068 to 1132 K. The density result from this study is within 0.3% of the published data. However, the current viscosity result is approximately 30% lower than the existing data. The electrical conductivity of Hg(sub o.8)Cd(sub 0.2)Te melt as a function of temperature, which is not available in the literature, is also determined. The analysis of the temperature dependent electrical conductivity and the relationship between the kinematic viscosity and density indicated that the structure of the melt appeared to be homogeneous when the temperature was above 1090 K. A structural transition occurred in the Hg(sub 0.8)Cd(0.2)Te melt as the temperature was decreased from 1090 K to the liquidus temperature.

  19. SWIR HgCdTe 256x256 focal plane array technology at BAE Systems

    NASA Astrophysics Data System (ADS)

    Hairston, A.; Tobin, S. P.; Hutchins, M.; Marciniec, J.; Mullarkey, J.; Norton, P.; Gurnee, M.; Reine, M. B.

    2006-08-01

    This paper reports new performance data for SWIR HgCdTe 256x256 hybrid Focal Plane Arrays with cutoff wavelengths of 2.6-2.7 μm, operating at temperatures of 190 K to 220 K. The unit cell size is 30x30 μm2. Back-illuminated SWIR HgCdTe P-on-n photodiode arrays were fabricated from two-layer LPE films grown on CdZnTe substrates. Response uniformity is excellent, with σ/μ=3-4%, and response operabilities are better than 99.9%. At a temperature of 190 K and a background photon flux of 6.8x10 11 ph/cm2-s, the median NEI is 1.1x10 9 ph/cm2-s, which is 1.4 times the BLIP NEI. NEI operabilities are better than 98.8%. Quantum efficiencies for large-area test diodes are 69% to 78%, close to the 79% upper limit imposed by reflection from the non-antireflection-coated CdZnTe substrate.

  20. Corresponding states principle and van der Waals potentials of Zn2, Cd2, and Hg2.

    PubMed

    Wei, L M; Li, P; Qiao, L W; Tang, K T

    2013-10-21

    Based on the assumptions that the corresponding states principle is valid for the group 12 dimers and that the interaction potentials of these dimers can be described by the Tang-Toennies potential model, a set of correlation relations between the spectroscopic constants of these dimers are derived. Some recently measured spectroscopic constants satisfy these relations quite well, but older experimental data do not. These recent spectroscopic constants and the newly available dispersion coefficients are used to construct the entire van der Waals potentials of Zn2, Cd2, and Hg2. There are indications that the ground state Hg2 potential predicted by the present study is possibly the most accurate to date. No unequivocal conclusion can be made for Zn2 and Cd2 potentials. Compared with the recent experiments, the present Zn2 bond length is eight percent too small, and the present Cd2 bond length is eight percent too large. However, both Zn2 and Cd2 bond lengths predicted by the present study are in good agreement with the quantum Monte Carlo results. PMID:24160512

  1. Radioactivity in HgCdTe devices: potential source of "snowballs"

    NASA Astrophysics Data System (ADS)

    McCullough, P.

    2009-12-01

    We hypothesize that the "snowballs" observed in HgCdTe infrared detectors are caused by natural radioactivity in the devices themselves. As characterized by Hilbert (2009) in the WFC3 flight IR array (FPA165), "snowballs" are transient events that instantaneously saturate a few pixels and deposit a few hundred thousand electrons over a ~5-pixel (~100-um) diameter region. In 2008, prior to flight of detector FPA165, Hilbert (2009) detected 21 snowballs during thermal vaccum test three (TV3) and inferred a rate of ~1100 ± 200 snowballs per year per cm2 of the HgCdTe detector. Alpha particles emitted from either (or both) naturally radioactive thorium and/or uranium, at ~1 ppm concentrations within the device, can explain the observed characteristics of the "snowballs." If thorium is present, up to four distinctly observable snowballs should appear at the same location on the pixel array over the course of many years. While the indium in the bump bonds is almost entirely the radioactive isotope In-115, and 12% of the cadmium is naturally radioactive Cd-113, both of those emit only betas, which are too penetrating and not energetic enough to match the observed characteristics of "snowballs." Also, the Cd-113 emission rate is much less than that of the observed snowballs.

  2. The crystal structures of Hg 4Sb 2I 3 and Cd 4Sb 2I 3

    NASA Astrophysics Data System (ADS)

    Shevelkov, A. V.; Dikarev, E. V.; Popovkin, B. A.

    1991-08-01

    The crystal structures of Hg 4Sb 2I 3 and Cd 4Sb 2I 3 have been solved by X-ray single crystal techniques. Hg 4Sb 2I 3 and Cd 4Sb 2I 3 are isostructural and crystallize in the cubic system, space group Pa3, Z = 8, with cell dimensions a = 13.4392(6) Å for Hg 4Sb 2I 3 and a = 13.4876(5) Å for Cd 4Sb 2I 3. The compounds have a three-dimensional array built from six-membered rings containing mercury (cadmium), antimony, and iodine atoms. One-half of the antimony atoms are bound into Sb 4-2 pairs with an SbSb distance of 2.75 Å. The absence of HgHg (or CdCd) and SbI bonding was determined.

  3. Analysis of HgTe/CdTe MOCVD grown superlattice epitaxial structures on GaAs by ion beam techniques

    NASA Astrophysics Data System (ADS)

    Wielunski, L. S.; Kenny, M. J.; Pain, G. N.

    1992-02-01

    Heteroepitaxial MOCVD grown HgTe/CdTe superlattice structures have been examined by Rutherford backscattering spectrometry (RBS) to monitor Hg, Cd and Te concentrations as a function of depth. Individual sublayers thicknesses have been measured at the same time. Crystal quality has been assessed using ion channeling. In addition the nuclear reaction 12C(d,p) 13C was used to detect carbon impurities and proton induced X-ray emision (PIXE) analysis used to detect In and Sb introduced during growth. The results show that the as-grown HgTe/CdTe superlattice has good crystal quality and reasonable lateral uniformity. Mercury concentration is difficult to control during growth and variation between sub-layers is observed. Hg-Cd interdiffusion is observed in heat treated samples. Carbon concentration varies; in a good quality samples ⩽ 20 ppm is present.

  4. Non-cooled (Cd,Hg)Te detectors of middle and far infrared, based on the Dember effect

    NASA Astrophysics Data System (ADS)

    Niedziela, T.; Piotrowski, J.

    Using Piotrowski and Rogalski (1985) data on the material parameters of (Cd,Hg)Te, the voltage responsivity and normalized detectivity of (Cd,Hg)Te Dember photodetectors of middle IR and FIR were analyzed on the basis of the formulation by Niedziela and Piotrowski (1987) of the Dember effect in homogeneous layers of (Cd,HG)Te. It is shown that, for middle IR, a necessary condition for reaching the ultimate value of the normalized detectivity by (Cd,Hg)Te Dember detectors is the use of photosensitive elements of type p with thicknesses equivalent to the diffusion length (ad of about 1) and with recombination velocities that are high (s2 = 1000/msec) on the nonirradiated surface and low (s1 about 0) on the irradiated surface. For FIR, the ultimate normalized detectivity of these detectors are attainable in somewhat thicker photosensitive elements (ad = 2), and with higher recombination velocities (s2 = 100,000/msec) at the nonirradiated surface.

  5. Possible link between Hg and Cd accumulation in the brain of long-finned pilot whales (Globicephala melas).

    PubMed

    Gajdosechova, Zuzana; Brownlow, Andrew; Cottin, Nicolas T; Fernandes, Mariana; Read, Fiona L; Urgast, Dagmar S; Raab, Andrea; Feldmann, Jörg; Krupp, Eva M

    2016-03-01

    The bioaccumulation of metals was investigated by analysis of liver, kidney, muscle and brain tissue of a pod of 21 long-finned pilot whales (Globicephala melas) of all ages stranded in Scotland, UK. The results are the first to report cadmium (Cd) passage through the blood-brain barrier of pilot whales and provide a comprehensive study of the long-term (up to 35 years) mammalian exposure to the environmental pollutants. Additionally, linear accumulation of mercury (Hg) was observed in all studied tissues, whereas for Cd this was only observed in the liver. Total Hg concentration above the upper neurochemical threshold was found in the sub-adult and adult brains and methylmercury (MeHg) of 2.2mg/kg was found in the brain of one individual. Inter-elemental analysis showed significant positive correlations of Hg with selenium (Se) and Cd with Se in all studied tissues. Furthermore, differences in the elemental concentrations in the liver and brain tissues were found between juvenile, sub-adult and adult groups. The highest concentrations of manganese, iron, zinc, Se, Hg and MeHg were noted in the livers, whereas Cd predominantly accumulated in the kidneys. High concentrations of Hg and Cd in the tissues of pilot whales presented in this study reflect ever increasing toxic stress on marine mammals. PMID:26748005

  6. High-sensitivity assay for Hg (II) and Ag (I) ion detection: A new class of droplet digital PCR logic gates for an intelligent DNA calculator.

    PubMed

    Cheng, Nan; Zhu, Pengyu; Xu, Yuancong; Huang, Kunlun; Luo, Yunbo; Yang, Zhansen; Xu, Wentao

    2016-10-15

    The first example of droplet digital PCR logic gates ("YES", "OR" and "AND") for Hg (II) and Ag (I) ion detection has been constructed based on two amplification events triggered by a metal-ion-mediated base mispairing (T-Hg(II)-T and C-Ag(I)-C). In this work, Hg(II) and Ag(I) were used as the input, and the "true" hierarchical colors or "false" green were the output. Through accurate molecular recognition and high sensitivity amplification, positive droplets were generated by droplet digital PCR and viewed as the basis of hierarchical digital signals. Based on this principle, YES gate for Hg(II) (or Ag(I)) detection, OR gate for Hg(II) or Ag(I) detection and AND gate for Hg(II) and Ag(I) detection were developed, and their sensitively and selectivity were reported. The results indicate that the ddPCR logic system developed based on the different indicators for Hg(II) and Ag(I) ions provides a useful strategy for developing advanced detection methods, which are promising for multiplex metal ion analysis and intelligent DNA calculator design applications. PMID:27140307

  7. Electron mobilities and quantum Hall effect in modulation-doped HgTe-CdTe superlattices

    NASA Astrophysics Data System (ADS)

    Hoffman, C. A.; Meyer, J. R.; Bartoli, F. J.; Lansari, Y.; Cook, J. W., Jr.; Schetzina, J. F.

    1991-10-01

    Photoassisted molecular-beam epitaxy and controlled modulation doping have been used to grow HgTe-CdTe superlattices with n-type carrier concentrations of up to 3×1017 cm-3. It is found that in contrast to Hg1-xCdxTe alloys where the electron mobility decreases strongly with donor concentration, μn in the modulation-doped superlattices is nearly independent of ND at large ND. We also discuss an observation of the quantum Hall effect associated with carriers distributed throughout the interior of a HgTe-CdTe superlattice. Whereas previous reports of quantized steps in the Hall conductivity have involved a small number of conduction channels (hence a small fraction of the superlattice periods), we observe plateaus at multiples of ~=200e2/h in a number of 200-period superlattices with high doping levels. This indicates participation by nearly all wells in the superlattice, and implies that the controlled doping is extremely uniform.

  8. Effect of addition of palladium on properties of Ag2Hg3 (gamma 1) phase.

    PubMed

    Chern Lin, J H; Lee, H C; Ju, C P

    1997-07-01

    The effect of palladium addition on the microstructure, compressive strength, creep rate and mercury release rate of Ag2Hg3 (gamma 1) phase was evaluated. Experimental results indicated that fairly pure gamma 1 phase could be fabricated using the present trituration method. The heat treatment of gamma 1 at 90 degrees C increased porosity level, increased dimensional shrinkage, increased mercury vapour release and enhanced the formation of beta1 phase. Addition of palladium in gamma 1 slowed down the amalgamation reaction, largely suppressed the phase transition to beta1 and caused a slight shift in open circuit potential toward the anodic direction. Although the overall anodic polarization profiles did not show a significant effect of palladium, scanning electron microscopy revealed morphological differences between pure and palladium-containing gamma 1. Addition of palladium in gamma 1 also increased compressive strength, increased creep resistance, and largely reduced both mercury vapour and ion release rates. Considering overall performance, the optimal palladium content in gamma 1 seems to be in the range between 0.50 and 0.75 wt%. PMID:9199764

  9. Interview with Paul W. Kruse on the Early History of HgCdTe, Conducted on October 22, 1980

    NASA Astrophysics Data System (ADS)

    Reine, Marion B.

    2015-09-01

    This paper presents an interview with Dr Paul W. Kruse (1927-2012) on the early history of the semiconductor alloy mercury cadmium telluride (HgCdTe or Hg1- x Cd x Te) at the Honeywell Corporate Research Center near Minneapolis, Minnesota. Conducted on October 22, 1980, the interview covers two main areas. One area is the story of how the HgCdTe research effort came about at the Honeywell Research Center in the early 1960s, what technical choices were made and when, and what technical challenges were overcome and how. The other area is the organization, culture, environment and personnel at the Honeywell Research Center that made the early HgCdTe research programs so successful. HgCdTe has emerged as the highest-performance, most widely applicable infrared detector material. HgCdTe continues to satisfy a broad variety of advanced military and space applications. It is illustrative to look back on the early history of this remarkable semiconductor alloy to help to understand why its technological development as an infrared detector has been so successful.

  10. Exposure assessment of heavy metals (Cd, Hg, and Pb) by the intake of local foods from Zhejiang, China.

    PubMed

    Tang, Jun; Huang, Zhu; Pan, Xiao-Dong

    2014-08-01

    Considering the environmental pollution, food safety is of great concern to the consumers. The present study was conducted to assess the health risk of cadmium (Cd), mercury (Hg), and lead (Pb) through the dietary intake in Zhejiang, China. Eight hundred and sixty two food samples including aquatic products, meat, vegetables, milk and dairy products, and cereal grains were analyzed. Only 2.44 % (Cd), 1.39 % (Hg), and 1.51 % (Pb) of the samples exceeded the maximum allowable concentration set by Chinese Ministry of Health. The average dietary intakes of Cd, Hg, and Pb were estimated to be 0.26, 0.14, and 0.55 μg/kg bw/day, respectively. Compared with the reference doses, the mean exposure of Cd, Hg, and Pb was all less than the tolerable intake value. Only at the 95th percentile level, Cd and Hg exposure exceeded the values of tolerable intakes by 40 and 277 %, respectively. It indicates that there is low health risk to the dietary exposure of Cd, Hg, and Pb for general people in Zhejiang province, China. PMID:24429725

  11. Fast, high-yield synthesis of amphiphilic Ag nanoclusters and the sensing of Hg2+ in environmental samples

    NASA Astrophysics Data System (ADS)

    Xia, Nan; Yang, Jie; Wu, Zhikun

    2015-05-01

    We report the high-yield (74%) synthesis of Ag30(Capt)18 (abbreviated as Ag30) in a very time-saving fashion (half an hour). The cluster composition was determined by high-resolution mass spectrometry combined with TG analysis, and the structure was probed by 1D and 2D NMR. Interestingly, the nanoclusters can dissolve in water and methanol, as well as in most organic solvents such as ethanol, acetone, acetonitrile, dichloromethane and ethyl acetate with the assistance of acetic acid. Such a good solubility in a range of various polar solvents was not reported previously in nanoclusters' research and is important for applications. An important result from this work is that Ag30 can sense a low concentration of Hg2+ in environmental samples (including lake water and soil solution), indicating that Ag30 can be a potential colorimetric probe for Hg2+. The sensing mechanism was revealed to be related to the anti-galvanic reduction process.We report the high-yield (74%) synthesis of Ag30(Capt)18 (abbreviated as Ag30) in a very time-saving fashion (half an hour). The cluster composition was determined by high-resolution mass spectrometry combined with TG analysis, and the structure was probed by 1D and 2D NMR. Interestingly, the nanoclusters can dissolve in water and methanol, as well as in most organic solvents such as ethanol, acetone, acetonitrile, dichloromethane and ethyl acetate with the assistance of acetic acid. Such a good solubility in a range of various polar solvents was not reported previously in nanoclusters' research and is important for applications. An important result from this work is that Ag30 can sense a low concentration of Hg2+ in environmental samples (including lake water and soil solution), indicating that Ag30 can be a potential colorimetric probe for Hg2+. The sensing mechanism was revealed to be related to the anti-galvanic reduction process. Electronic supplementary information (ESI) available. See DOI: 10.1039/c5nr00705d

  12. The heat of formation of Mercury vacancies in Hg(0.8)Cd(0.2)Te

    NASA Technical Reports Server (NTRS)

    Wiedemeier, H.; Trivedi, S. B.; Whiteside, R. C.; Palosz, W.

    1986-01-01

    A modified mass loss measurement technique has been employed for the first time for the direct in situ determination of vacancy concentrations in Hg(0.8)Cd(0.2)Te at elevated temperatures. This technique can also be used to establish the pressure-temperature phase diagram for this type of system. The derived mean value for the heat of formation of mercury vacancies in the above alloy is 0.43 eV. Theoretical considerations concerning the vacancy formation in HgTe and in Hg(0.8)Cd(0.2)Te are in qualitative agreement with the experimental value.

  13. Study of Morphological Defects on Dual-Band HgCdTe on CdZnTe

    NASA Astrophysics Data System (ADS)

    Reddy, M.; Radford, W. A.; Lofgreen, D. D.; Olsson, K. R.; Peterson, J. M.; Johnson, S. M.

    2014-08-01

    HgCdTe dual-band epitaxial layers on lattice-matched CdZnTe substrates often have morphological defects. These defects, unlike normal void and microvoid defects, do not contain a polycrystalline core and, therefore, do not offer a good contrast for observation using optical and electron microscopes. This paper reports a way of identifying these defects by using a Nomarski optical microscopy image overlay on focused ion beam microscopy images for preparation of thin cross-sectional foils of these defects. Transmission electron microscopy was used to study the defect cross-sections to identify the origin and evolution of the morphological defects and their effect on the epitaxial layer. This paper reports cross-sectional analysis of four morphological defects of different shape and size.

  14. Investigation of trap levels in HgCdTe IR detectors through low frequency noise spectroscopy

    NASA Astrophysics Data System (ADS)

    Ciura, L.; Kolek, A.; Kębłowski, A.; Stanaszek, D.; Piotrowski, A.; Gawron, W.; Piotrowski, J.

    2016-03-01

    Low frequency noise spectroscopy is a valuable tool for studying narrow gap semiconductor materials and devices. In the paper, the method of traps investigation with low frequency noise spectroscopy was presented, together with quantitative analysis of the results obtained for high-operating-temperature, fast response, Hg1‑x Cd x Te mid-wavelength infrared detectors. The hole trap levels in these devices are Cd-content independent and take the value E T ≅ 140 meV or E T ≅ 40 meV. The level at E T ≅ 140 meV was found for almost all tested detectors. The level around E T = 40 meV was found in two samples. Apart from the hole traps, three electron traps were also found. Their energy levels follow the trend lines E T = 0.35E g(x) and E T = 0.75E g(x). All trap energies are consistent with the results reported in the literature for Hg1‑x Cd x Te devices.

  15. 256 x 256 hybrid HgCdTe infrared focal plane arrays

    NASA Astrophysics Data System (ADS)

    Bailey, Robert B.; Kozlowski, Lester J.; Chen, Jenkon; Bui, Duc Q.; Vural, Kadri

    1991-05-01

    Hybrid HgCdTe 256 x 256 focal plane arrays have been developed to meet the sensitivity, resolution, and field-of-view requirements of high-performance medium-wavelength infrared (MWIR) imaging systems. The detector arrays for these hybrids are fabricated on substrates that reduce or eliminate the thermal expansion mismatch to the silicon readout circuit. The readouts are foundry-processed CMOS switched-FET circuits that have charge capacities greater than 107 electrons and a single video output capable of 10-MHz data rates. The high quantum efficiency, tunable absorption wavelength, and broad operating temperature range of these large HgCdTe staring focal plane arrays give them significant advantages over competing sensors. The mature Producible Alternative to CdTe for Epitaxy-1 (PACE-1) technology, using sapphire detector substrates, has demonstrated 256 x 256 MWIR arrays with mean laboratory noise equivalent temperature difference (NETO) of 9 mK for a 4.9-micron cutoff wavelength, 40-micron pixel size, and 80-K operating temperature. RMS detector response nonuniformities are less than 4 percent, and pixel yields are greater than 99 percent. The newly developed PACE-3 process uses silicon for the detector substrate to eliminate completely the thermal mismatch with the silicon readout circuit. It has the potential for similar performance in even larger array sizes. A 640 x 480 hybrid array is under development.

  16. Dry etched SiO2 Mask for HgCdTe Etching Process

    NASA Astrophysics Data System (ADS)

    Chen, Y. Y.; Ye, Z. H.; Sun, C. H.; Deng, L. G.; Zhang, S.; Xing, W.; Hu, X. N.; Ding, R. J.; He, L.

    2016-09-01

    A highly anisotropic etching process with low etch-induced damage is indispensable for advanced HgCdTe (MCT) infrared focal plane array (IRFPA) detectors. The inductively coupled plasma (ICP) enhanced reactive ion etching technique has been widely adopted in manufacturing HgCdTe IRFPA devices. An accurately patterned mask with sharp edges is decisive to accomplish pattern duplication. It has been reported by our group that the SiO2 mask functions well in etching HgCdTe with high selectivity. However, the wet process in defining the SiO2 mask is limited by ambiguous edges and nonuniform patterns. In this report, we patterned SiO2 with a mature ICP etching technique, prior to which a thin ZnS film was deposited by thermal evaporation. The SiO2 film etching can be terminated at the auto-stopping point of the ZnS layer thanks to the high selectivity of SiO2/ZnS in SF6 based etchant. Consequently, MCT etching was directly performed without any other treatment. This mask showed acceptable profile due to the maturity of the SiO2 etching process. The well-defined SiO2 pattern and the etched smooth surfaces were investigated with scanning electron microscopy and atomic force microscope. This new mask process could transfer the patterns exactly with very small etch-bias. A cavity with aspect-ratio (AR) of 1.2 and root mean square roughness of 1.77 nm was achieved first, slightly higher AR of 1.67 was also get with better mask profile. This masking process ensures good uniformity and surely benefits the delineation of shrinking pixels with its high resolution.

  17. Determination of in vitro bioaccessibility of Pb, As, Cd and Hg in selected traditional Indian medicines

    PubMed Central

    Jayawardene, Innocent; Saper, Robert; Lupoli, Nicola; Sehgal, Anusha; Wright, Robert O.; Amarasiriwardena, Chitra

    2011-01-01

    In vitro bioaccessibility of Pb, As, Cd and Hg in five traditional Indian medicine samples was measured as a determinant of bioavailability. The method is based on simulation of human digestion in the passage of material from the gastric to intestinal portions of the gastrointestinal tract. Total concentration and concentration in extracts from gastric and intestinal phases were analyzed for Pb, As and Cd by dynamic reaction cell inductively coupled plasma mass spectrometry (DRC-ICP-MS) and for Hg by direct mercury analyzer (DMA). Total lead ranged from 1.9 to 36000 µg g−1. In each of the samples bioaccessibility of lead was significantly higher (range 28–88%) in the gastric phase than in the intestinal phase (range 1.4–75.4%). Only Ekangvir Ras had measurable arsenic (304 µg g−1). Its bioaccessibility in the gastric phase and intestinal phase was 82.6% and 78.1%, respectively. Only Ayu-Nephro-Tone had measurable cadmium (14.4 µg g−1). Its bioaccessibility in the gastric phase and intestinal phase was 80.5% and 2.2%, respectively. Three samples had measurable mercury (range 37 µg g−1–10000 µg g−1). Mercury in these samples was not bioaccessible. For the samples with measurable amount of metal, the estimated daily amount of bioaccessible (EDAB) metal was calculated. When compared with the most liberal published safety guideline, EDAB-Pb in Mahayograj Guggulu and Ekangvir Ras were 37 and 45 fold greater. When compared with the most conservative published safety guideline, all samples had higher EDAB-Pb or EDAB-As than the suggested limits. The EDAB-Cd and EDAB-Hg were acceptably below published safety limits. PMID:21643429

  18. Dry etched SiO2 Mask for HgCdTe Etching Process

    NASA Astrophysics Data System (ADS)

    Chen, Y. Y.; Ye, Z. H.; Sun, C. H.; Deng, L. G.; Zhang, S.; Xing, W.; Hu, X. N.; Ding, R. J.; He, L.

    2016-04-01

    A highly anisotropic etching process with low etch-induced damage is indispensable for advanced HgCdTe (MCT) infrared focal plane array (IRFPA) detectors. The inductively coupled plasma (ICP) enhanced reactive ion etching technique has been widely adopted in manufacturing HgCdTe IRFPA devices. An accurately patterned mask with sharp edges is decisive to accomplish pattern duplication. It has been reported by our group that the SiO2 mask functions well in etching HgCdTe with high selectivity. However, the wet process in defining the SiO2 mask is limited by ambiguous edges and nonuniform patterns. In this report, we patterned SiO2 with a mature ICP etching technique, prior to which a thin ZnS film was deposited by thermal evaporation. The SiO2 film etching can be terminated at the auto-stopping point of the ZnS layer thanks to the high selectivity of SiO2/ZnS in SF6 based etchant. Consequently, MCT etching was directly performed without any other treatment. This mask showed acceptable profile due to the maturity of the SiO2 etching process. The well-defined SiO2 pattern and the etched smooth surfaces were investigated with scanning electron microscopy and atomic force microscope. This new mask process could transfer the patterns exactly with very small etch-bias. A cavity with aspect-ratio (AR) of 1.2 and root mean square roughness of 1.77 nm was achieved first, slightly higher AR of 1.67 was also get with better mask profile. This masking process ensures good uniformity and surely benefits the delineation of shrinking pixels with its high resolution.

  19. Saturation of band-gap resonant optical phase conjugation in HgCdTe.

    PubMed

    Yuen, S Y; Becla, P

    1983-07-01

    The saturation behavior of band-gap resonant optical nonlinearity is studied by degenerate four-wave mixing experiments at 10.6 microm in HgCdTe over a wide range of laser intensities. The reflectivity clips at a constant level when the laser intensity is increased above 100 W/cm(2), and the corresponding effective third-order nonlinear susceptibility drops as the inverse of the laser intensity. A theory based on the saturation of the interband absorption at the pump frequency resulting from state blocking is presented and agrees well with the experiment. PMID:19718113

  20. Electrical properties of modulation-doped HgTe-CdTe superlattices

    NASA Astrophysics Data System (ADS)

    Hwang, S.; Lansari, Y.; Yang, Z.; Cook, J. W.; Schetzina, J. F.

    1991-10-01

    Growth of modulation-doped HgTe-CdTe superlattices (SLs) at very low temperatures (140 °C) by photoassisted molecular beam epitaxy is reported. SL layer thicknesses were intentionally chosen such that most of the SLs studied are inverted-band semimetals or inverted-band semiconductors. Both p- and n-type samples were successsfully prepared and studied. The doped superlattices exhibit excellent electrical properties. Lack of carrier freeze-out at low temperatures provides convincing evidence that modulation-doping has been achieved.

  1. Intrinsic Spin Hall Effect Induced by Quantum Phase Transition in HgCdTe Quantum Wells

    SciTech Connect

    Yang, Wen; Chang, Kai; Zhang, Shou-Cheng; /Stanford U., Phys. Dept.

    2010-03-19

    Spin Hall effect can be induced both by the extrinsic impurity scattering and by the intrinsic spin-orbit coupling in the electronic structure. The HgTe/CdTe quantum well has a quantum phase transition where the electronic structure changes from normal to inverted. We show that the intrinsic spin Hall effect of the conduction band vanishes on the normal side, while it is finite on the inverted side. This difference gives a direct mechanism to experimentally distinguish the intrinsic spin Hall effect from the extrinsic one.

  2. Conceptual design and applications of HgCdTe infrared photodiodes for heterodyne systems

    NASA Technical Reports Server (NTRS)

    Sirieix, M. B.; Hofheimer, H.

    1980-01-01

    The significance of HgCdTe photodiodes are discussed relative to their existance in heterodyne detection systems operating in the 9 to 11 micrometer CO2 laser wavelength region. Their successful fabrication as well as the physical properties of the materials are described. The implementation of controlled industrial processes are reported with emphasis on the yield of predictable and repeatable detector characteristics to the discriminating systems, demands for high cutoff frequencies, quantum efficiency, and reliability. The most salient production steps and diode characteristics are presented. Measured results from production units are also given.

  3. Effect of growth parameters on compositional variations in directionally solidified HgCdTe alloys

    NASA Technical Reports Server (NTRS)

    Szofran, F. R.; Chandra, D.; Wang, J.-C.; Cothran, E. K.; Lehoczky, S. L.

    1984-01-01

    A series of Hg(1-x)Cd(x)Te alloy crystals was grown by directional solidification with compositions ranging from x = 0.2 to x = 0.4. The measured axial compositional profiles were interpreted in terms of an exact numerical solution of the appropriate diffusion equation that takes into account both the variations of the segregation coefficient and solidification rate with composition. The solutions for all growth rates agree generally well with the experimental data, and confirm earlier observations that employed approximate analytical solutions. The effective mass diffusion coefficients showed no significant composition or melt temperature dependence. Slightly higher diffusion coefficients were obtained, however, for the highest growth rates.

  4. Relativistic M-subshell radiationless transition probabilities and energies for Zn, Cd and Hg

    SciTech Connect

    Sampaio, J.M.; Parente, F.; Indelicato, P.; Marques, J.P.

    2014-09-15

    Theoretical calculations of radiationless transition probabilities and energies for M-subshell vacancies in Zn, Cd, and Hg are tabulated using the Dirac–Fock method. Transition probabilities between an initial vacancy state and a final two-vacancies state are presented for each initial and final atomic angular momentum quantum number. Calculations were performed in the single configuration approach with the Breit interaction, self-energy and (Uehling) vacuum polarization corrections included in the self-consistent method. Higher-order retardation corrections and QED effects were also included as perturbations.

  5. Three-Dimensional Electromagnetic and Electrical Simulation of HgCdTe Pixel Arrays

    NASA Astrophysics Data System (ADS)

    Keasler, Craig A.; Bellotti, Enrico

    2011-08-01

    We have investigated the combined electromagnetic and electrical response of HgCdTe-based pixel detector arrays with different geometries. We have computed the propagation of the optical signal in the detector structure by solving Maxwell's curl equations using a finite-difference time-domain approach. From the field distribution inside the device, we have evaluated the optical carrier generation rate. Using this information in a three-dimensional (3D) numerical model based on a drift-diffusion approach, we have computed the quantum efficiency and photoresponse of a number of pixel geometries. Specifically, we have analyzed the response of both mesa-type and planar detector arrays with and without CdZnTe substrate. Furthermore, the electromagnetic response has also been evaluated for different metal contact dimensions and configurations. It is found that, for mesa-type arrays without the substrate, significant reflection effects take place in the device that lead to resonance peaks in the photoresponse.

  6. Effect of Lattice Mismatch on HgCdTe LPE Film Surface Morphology

    NASA Astrophysics Data System (ADS)

    Sun, Quanzhi; Wei, Yanfeng; Zhang, Juan; Sun, Ruiyun

    2016-09-01

    A new type of crystal defect, which we call a rough structure, is reported in this work. The rough structure appears in large lattice mismatch regions whereas a normal surface appears in the regions where there is a small lattice mismatch on the same substrate. Experiments proved that under normal liquid-phase epitaxy growth conditions, the appearance of a rough structure is related to the lattice mismatch between the substrate and the film. Statistical data indicated that for Hg1- x Cd x Te films with different Cd compositions x, a rough structure appeared on the film surface when the lattice mismatch was outside the range of 0.02-0.11%. The rough structure may result from the misfit dislocations resulting from strain relaxation. When there was a small surface crystal orientation deviation from (111), dense growth ripples appeared instead of the rough structure. A super-flat surface sometimes appeared inside the rough structure regions.

  7. Effect of Lattice Mismatch on HgCdTe LPE Film Surface Morphology

    NASA Astrophysics Data System (ADS)

    Sun, Quanzhi; Wei, Yanfeng; Zhang, Juan; Sun, Ruiyun

    2016-05-01

    A new type of crystal defect, which we call a rough structure, is reported in this work. The rough structure appears in large lattice mismatch regions whereas a normal surface appears in the regions where there is a small lattice mismatch on the same substrate. Experiments proved that under normal liquid-phase epitaxy growth conditions, the appearance of a rough structure is related to the lattice mismatch between the substrate and the film. Statistical data indicated that for Hg1-x Cd x Te films with different Cd compositions x, a rough structure appeared on the film surface when the lattice mismatch was outside the range of 0.02-0.11%. The rough structure may result from the misfit dislocations resulting from strain relaxation. When there was a small surface crystal orientation deviation from (111), dense growth ripples appeared instead of the rough structure. A super-flat surface sometimes appeared inside the rough structure regions.

  8. Improved HgCdTe technology for high-performance infrared detectors

    NASA Astrophysics Data System (ADS)

    Ziegler, Johann; Bruder, Martin; Cabanski, Wolfgang A.; Figgemeier, Heinrich; Finck, Marcus; Menger, Peter; Simon, Thomas; Wollrab, Richard

    2002-08-01

    To meet the demands for high performance HgCdTe detectors at high yield and producibility, key processes have been optimized and new approaches have been developed. By a superior CdZnTe Bridgman growth process, dislocation densities <1x105cm-2 in substrate and epitaxial layer are achieved for all substrates, ensuring high performance Focal-Plane-Arrays, particularly for (lambda) CO=11,5 micrometers arrays. A new guard ring approach for planar diodes, created by a n+-region in pixel spacing area reduces pixel crosstalk and improves Modulation Transfer Function. For high thermal cycles of the FPA, the flip-chip- technique has been optimized, leading to >2000 cycles for 640x512-FPA's. Producibility and reliability of AIM's MCT FPA technology are demonstrated.

  9. Development of optically immersed, near-room-temperature HgCdTe photovoltaic detectors

    NASA Astrophysics Data System (ADS)

    Qiao, Hui; Wang, Reng; Jiao, Cuiling; Gong, Wei; Li, Xiangyang

    2015-04-01

    Optically immersed HgCdTe photovoltaic detectors in the 2.5 to 3.2 μm wavelength region operating at near room temperatures have been developed based on HgCdTe graded structure materials grown by opened tube isothermal vapor phase epitaxy (ISOVPE) method on lattice matched CdZnTe substrate. Fourier transformation infrared spectroscopy (FTIR) measurement combined with continuous step wet etching was applied to adjust the cutoff wavelength. The devices were designed and fabricated by traditional n-on-p planar junction process. Optical immersion of micro-lenses by CdZnTe substrate was used to improve the performance of the devices and the hyper-hemispherical micro-lens with a diameter of 1.5mm was made by single point diamond turning method. The optical response area was tested by laser beam induced current (LBIC) scanning measurement, and the result showed that the devices with hyper-hemispherical immersion micro-lens could get a 1mm×1mm response area as designed. The current-voltage characteristic of the devices were measured, and all the devices showed a little increase in the values of zero biased resistance, which was due to a decreased background radiation acceptance angle caused by a hyper-hemispherical structure. The photo response signal and dark noise were also measured before and after the micro-lens fabrication. The signal showed an increase by 20-30 times due to the enlarged photo response area, and the dark noise showed a little decrease which was also due to a limited background radiation acceptance angle. As a result, a multiple factor of four in detectivity enhancement could be achieved by the adoption of hyper-hemispherical immersion micro-lens structures.

  10. The side-passivation research on LWIR HgCdTe detector

    NASA Astrophysics Data System (ADS)

    Xu, Qinfei; Tang, Hengjing; Gong, Haimei

    2008-03-01

    In order to prevent Hg running over from the exposing side of HgCdTe LWIR detector with little photosensitive region, side-passivation detectors are fabricated. Then several experiments are done to characterize the side-passivation effect. Firstly, a SEM micrograph is shown, and it makes clear that wet etching and side-passivation can remove part of defect induced by IBE. Secondly, the performance measurement indicates that the performance of side-passivation detector is superior to the general one, especially for detectors with little photosensitive region. Thirdly, hot dipping is done to say that the thermal stability of side-passivation detectors is superior to general ones. And with the exception of this, the less the photosensitive region width is, the stronger the ability of protection is. Last but not the least, the detectivity of not only general detectors but also side-passivation ones increases obviously. As a whole, the performance of side-passivation detectors increases more largely than general ones. Above all, side-wall passivating film can passivate the sensitivity of detector's surface and block Hg out of the surface effectively. The results can provide experimental reference for IR semiconductor detector.

  11. Thermal cycling reliability of indirect hybrid HgCdTe infrared detectors

    NASA Astrophysics Data System (ADS)

    Chen, Xing; He, Kai; Wang, Jian-xin; Zhang, Qin-yao

    2013-09-01

    Thermal cycling reliability is one of the most important issues whether the HgCdTe infrared focal plane array detectors can be applied to both military and civil fields. In this paper, a 3D finite element model for indirect hybrid HgCdTe infrared detectors is established. The thermal stress distribution and thermally induced warpage of the detector assembly as a function of the distance between the detector chip and Si-ROIC, the thickness and the materials properties of electrical lead board in cryogenic temperature are analyzed. The results show that all these parameters have influences on the thermal stress distribution and warpage of the detector assembly, especially the coefficient of thermal expansion(CTE) of electrical lead board. The thermal stress and warpage in the assembly can be avoided or minimized by choosing the appropriate electrical lead board. Additionally, the warpage of some indirect hybrid detectors assembly samples is measured in experiment. The experimental results are in good agreement with the simulation results, which verifies that the results are calculated by finite element method are reasonable.

  12. A bandgap-engineered HgCdTe PBπn long-wavelength infrared detector

    NASA Astrophysics Data System (ADS)

    Qiu, W. C.; Jiang, T.; Cheng, X. A.

    2015-09-01

    In this paper, the HgCdTe PBπn (π represents p-type absorption layer) long-wavelength infrared detector based on bandgap-engineering is designed and validated by the preliminary experiments. Numerical simulation was applied to calculate the current-voltage (I-V) characteristic and zero-bias resistance-area product (R0A) for PBπn detectors and traditional pn photodiodes. The results show that the performance of PBπn detector was significantly improved compared with that of conventional pn photodiodes. The design of PBπn barrier structure can essentially reduce the dark current, while significantly improving the responsivity. In addition, when reverse biased, optimized PBπn device can also suppress Auger processes in the absorption layer under the high temperature up to 215 K. The proposed HgCdTe long wavelength infrared detectors based on vertical PBπn structure pave the way for development of high performance and high operation temperature infrared sensor applications.

  13. Electrical Characteristics of Mid-wavelength HgCdTe Photovoltaic Detectors Exposed to Gamma Irradiation

    NASA Astrophysics Data System (ADS)

    Qiao, H.; Hu, W. D.; Li, T.; Li, X. Y.; Chang, Y.

    2016-09-01

    The study of electrical characteristics of mid-wavelength HgCdTe photodiodes irradiated by steady-state gamma rays has been carried out. The measurement of the current-voltage curves during irradiation revealed an abnormal variation of zero biased resistance R 0, and it didn't tend to change monotonically as observed in the case of post irradiation measurement. The irradiation effect was dominated by bulk effect inferred from the fitting calculations, and the generation-recombination current in the depletion region was drastically affected by gamma irradiation. Another irradiation effect was the linear increase of the series resistance with irradiation dosage which was related with the change of transportation parameters of carriers. The influence of hydrogenation on the gamma irradiation effects was also studied for comparison with the same batch of HgCdTe photodiodes, and it was found that R 0 for the hydrogenated devices showed similar change to those without hydrogenation. The series resistance, however, gave a totally different irradiation effect from the non-hydrogenated detectors and showed little change up to nearly 1 Mrad(Si) of gamma irradiation, which may be explained by the annihilation of hydrogen radicals with the defects caused by gamma irradiation.

  14. Development of a P-I-N HgCdTe photomixer for laser heterodyne spectrometry

    NASA Technical Reports Server (NTRS)

    Bratt, Peter R.

    1987-01-01

    An improved HgCdTe photomixer technology was demonstrated employing a p-i-n photodiode structure. The i-region was near intrinsic n-type HgCdTe; the n-region was formed by B+ ion implantation; and the p-region was formed either by a shallow Au diffusion or by a Pt Schottky barrier. Experimental devices in a back-side illuminated mesa diode configuration were fabricated, tested, and delivered. The best photomixer was packaged in a 24-hour LN2 dewar along with a cooled GaAs FET preamplifier. Testing was performed by mixing black-body radiation with a CO2 laser beam and measuring the IF signal, noise, and signal-to-noise ratio in the GHz frequency range. Signal bandwidth for this photomixer was 1.3 GHz. The heterodyne NEP was 4.4 x 10 to the -20 W/Hz out to 1 GHz increasing to 8.6 x 10 to the -10 W/Hz at 2 GHz. Other photomixers delivered on this program had heterodyne NEPs at 1 GHz ranging from 8 x 10 to the -20 to 4.4 x 10 to the -19 W/Hz and NEP bandwidths from 2 to 4 GHz.

  15. Theory for electron and hole transport in HgTe-CdTe superlattices

    NASA Astrophysics Data System (ADS)

    Meyer, J. R.; Arnold, D. J.; Hoffman, C. A.; Bartoli, F. J.; Ram-Mohan, L. R.

    1991-10-01

    We present results of the first detailed theory for electron and hole transport in HgTe-CdTe superlattices. The calculations incorporates the superlattice band structure in full generality, and also treats multi-well scattering and screening processes which have been ignored in previous theories. It is predicted that whereas the electron and hole mobilities should be nearly equal at low temperatures, the hole mobility falls far below the electron value at somewhat higher temperatures due to the extreme nonparabolicity of the valence band. This prediction is entirely consistent with experimental results reported previously. Excellent quantitative agreement with the data over a broad temperature range is achieved if interface roughness scattering is considered in addition to ionized impurity scattering, acoustic and optical phonon scattering, and electron-hole scattering. It is pointed out that low-temperature electron mobilities for a number of thin-well HgTe-CdTe superlattices follow the d6W dependence expected for the interface roughness mechanism.

  16. Electrical Characteristics of Mid-wavelength HgCdTe Photovoltaic Detectors Exposed to Gamma Irradiation

    NASA Astrophysics Data System (ADS)

    Qiao, H.; Hu, W. D.; Li, T.; Li, X. Y.; Chang, Y.

    2016-03-01

    The study of electrical characteristics of mid-wavelength HgCdTe photodiodes irradiated by steady-state gamma rays has been carried out. The measurement of the current-voltage curves during irradiation revealed an abnormal variation of zero biased resistance R 0, and it didn't tend to change monotonically as observed in the case of post irradiation measurement. The irradiation effect was dominated by bulk effect inferred from the fitting calculations, and the generation-recombination current in the depletion region was drastically affected by gamma irradiation. Another irradiation effect was the linear increase of the series resistance with irradiation dosage which was related with the change of transportation parameters of carriers. The influence of hydrogenation on the gamma irradiation effects was also studied for comparison with the same batch of HgCdTe photodiodes, and it was found that R 0 for the hydrogenated devices showed similar change to those without hydrogenation. The series resistance, however, gave a totally different irradiation effect from the non-hydrogenated detectors and showed little change up to nearly 1 Mrad(Si) of gamma irradiation, which may be explained by the annihilation of hydrogen radicals with the defects caused by gamma irradiation.

  17. Comparison of Measured Leakage Current Distributions with Calculated Damage Energy Distributions in HgCdTe

    NASA Technical Reports Server (NTRS)

    Marshall, C. J.; Ladbury, R.; Marshall, P. W.; Reed, R. A.; Howe, C.; Weller, B.; Mendenhall, M.; Waczynski, A.; Jordan, T. M.; Fodness, B.

    2006-01-01

    This paper presents a combined Monte Carlo and analytic approach to the calculation of the pixel-to-pixel distribution of proton-induced damage in a HgCdTe sensor array and compares the results to measured dark current distributions after damage by 63 MeV protons. The moments of the Coulombic, nuclear elastic and nuclear inelastic damage distribution were extracted from Monte Carlo simulations and combined to form a damage distribution using the analytic techniques first described in [I]. The calculations show that the high energy recoils from the nuclear inelastic reactions (calculated using the Monte Car10 code MCNPX [2]) produce a pronounced skewing of the damage energy distribution. The nuclear elastic component (also calculated using the MCNPX) has a negligible effect on the shape of the damage distribution. The Coulombic contribution was calculated using MRED [3,4], a Geant4 [4,5] application. The comparison with the dark current distribution strongly suggests that mechanisms which are not linearly correlated with nonionizing damage produced according to collision kinematics are responsible for the observed dark current increases. This has important implications for the process of predicting the on-orbit dark current response of the HgCdTe sensor array.

  18. Probing topological transitions in HgTe/CdTe quantum wells by magneto-optical measurements

    NASA Astrophysics Data System (ADS)

    Scharf, Benedikt; Matos-Abiague, Alex; Žutić, Igor; Fabian, Jaroslav

    2015-06-01

    In two-dimensional topological insulators, such as inverted HgTe/CdTe quantum wells, helical quantum spin Hall (QSH) states persist even at finite magnetic fields below a critical magnetic field Bc, above which only quantum Hall (QH) states can be found. Using linear-response theory, we theoretically investigate the magneto-optical properties of inverted HgTe/CdTe quantum wells, both for infinite two-dimensional and finite-strip geometries and for possible signatures of the transition between the QSH and QH regimes. In the absorption spectrum, several peaks arise due to nonequidistant Landau levels in both regimes. However, in the QSH regime, we find an additional absorption peak at low energies in the finite-strip geometry. This peak arises due to the presence of edge states in this geometry and persists for any Fermi level in the QSH regime, while in the QH regime the peak vanishes if the Fermi level is situated in the bulk gap. Thus, by sweeping the gate voltage, it is possible to experimentally distinguish between the QSH and QH regimes due to this signature. Moreover, we investigate the effect of spin-orbit coupling and finite temperature on this measurement scheme.

  19. Numerical Device Modeling, Analysis, and Optimization of Extended-SWIR HgCdTe Infrared Detectors

    NASA Astrophysics Data System (ADS)

    Schuster, J.; DeWames, R. E.; DeCuir, E. A.; Bellotti, E.; Dhar, N.; Wijewarnasuriya, P. S.

    2016-06-01

    Imaging in the extended short-wavelength infrared (eSWIR) spectral band (1.7-3.0 μm) for astronomy applications is an area of significant interest. However, these applications require infrared detectors with extremely low dark current (less than 0.01 electrons per pixel per second for certain applications). In these detectors, sources of dark current that may limit the overall system performance are fundamental and/or defect-related mechanisms. Non-optimized growth/device processing may present material point defects within the HgCdTe bandgap leading to Shockley-Read-Hall dominated dark current. While realizing contributions to the dark current from only fundamental mechanisms should be the goal for attaining optimal device performance, it may not be readily feasible with current technology and/or resources. In this regard, the U.S. Army Research Laboratory performed physics-based, two- and three-dimensional numerical modeling of HgCdTe photovoltaic infrared detectors designed for operation in the eSWIR spectral band. The underlying impetus for this capability and study originates with a desire to reach fundamental performance limits via intelligent device design.

  20. Comparison of Measured Dark Current Distributions with Calculated Damage Energy Distributions in HgCdTe

    NASA Technical Reports Server (NTRS)

    Marshall, C. J.; Marshall, P. W.; Howe, C. L.; Reed, R. A.; Weller, R. A.; Mendenhall, M.; Waczynski, A.; Ladbury, R.; Jordan, T. M.

    2007-01-01

    This paper presents a combined Monte Carlo and analytic approach to the calculation of the pixel-to-pixel distribution of proton-induced damage in a HgCdTe sensor array and compares the results to measured dark current distributions after damage by 63 MeV protons. The moments of the Coulombic, nuclear elastic and nuclear inelastic damage distributions were extracted from Monte Carlo simulations and combined to form a damage distribution using the analytic techniques first described in [1]. The calculations show that the high energy recoils from the nuclear inelastic reactions (calculated using the Monte Carlo code MCNPX [2]) produce a pronounced skewing of the damage energy distribution. While the nuclear elastic component (also calculated using the MCNPX) contributes only a small fraction of the total nonionizing damage energy, its inclusion in the shape of the damage across the array is significant. The Coulombic contribution was calculated using MRED [3-5], a Geant4 [4,6] application. The comparison with the dark current distribution strongly suggests that mechanisms which are not linearly correlated with nonionizing damage produced according to collision kinematics are responsible for the observed dark current increases. This has important implications for the process of predicting the on-orbit dark current response of the HgCdTe sensor array.

  1. Numerical Device Modeling, Analysis, and Optimization of Extended-SWIR HgCdTe Infrared Detectors

    NASA Astrophysics Data System (ADS)

    Schuster, J.; DeWames, R. E.; DeCuir, E. A.; Bellotti, E.; Dhar, N.; Wijewarnasuriya, P. S.

    2016-09-01

    Imaging in the extended short-wavelength infrared (eSWIR) spectral band (1.7-3.0 μm) for astronomy applications is an area of significant interest. However, these applications require infrared detectors with extremely low dark current (less than 0.01 electrons per pixel per second for certain applications). In these detectors, sources of dark current that may limit the overall system performance are fundamental and/or defect-related mechanisms. Non-optimized growth/device processing may present material point defects within the HgCdTe bandgap leading to Shockley-Read-Hall dominated dark current. While realizing contributions to the dark current from only fundamental mechanisms should be the goal for attaining optimal device performance, it may not be readily feasible with current technology and/or resources. In this regard, the U.S. Army Research Laboratory performed physics-based, two- and three-dimensional numerical modeling of HgCdTe photovoltaic infrared detectors designed for operation in the eSWIR spectral band. The underlying impetus for this capability and study originates with a desire to reach fundamental performance limits via intelligent device design.

  2. A New nBn IR Detection Concept Using HgCdTe Material

    NASA Astrophysics Data System (ADS)

    Gravrand, O.; Boulard, F.; Ferron, A.; Ballet, Ph.; Hassis, W.

    2015-09-01

    This paper presents a new HgCdTe-based heterostructure to perform quantum infrared detection. The structure is based on the unipolar barrier concept, introduced by White in the 1980s for HgCdTe. The driving concept is the use of a large gap barrier layer to impede the flow of majority carriers (electrons on the conduction band in the case of n-type material) while facilitating the transport of minority (photo) carriers (holes on the valence band). The issue encountered here is the formation of a small potential barrier on the valence band, blocking photocarriers and therefore killing the quantum efficiency. The idea is to optimize the structure with an asymmetric barrier: abrupt on the contact side to efficiently block the majority carriers, and gradual on the absorption layer side to plane down the remaining potential barrier for the collected photocarriers. The concept has been studied by finite element modeling simulation and showed promising results. An optimal design has been identified in the middle wave band and molecular beam epitaxy layers have been grown then processed. First experimental characterization of the electro-optical properties of such structures showed promising features: 60% quantum efficiency and low turn-on voltage have been measured on single pixels.

  3. Design of HgCdTe heterojunction photodiodes on Si substrate

    NASA Astrophysics Data System (ADS)

    Zhang, P.; Ye, Z. H.; Chen, Y. Y.; Lin, C.; Hu, X. N.; Ding, R. J.; He, L.

    2014-05-01

    An innovative heterojunction photodiode structure in HgCdTe-on-Si long-wavelength (LW) infrared focal plane array (IRFPA) detector is investigated in this paper. The quantum efficiency and the photoresponse of devices have been numerically simulated, using Crosslight Technology Computer Aided Design (TCAD) software. Simulation results indicate that in contrast to the p+-on-n homojunction photodiode, the heterojunction photodiode effectively suppresses the crosstalk between adjacent pixels and interface recombination between HgCdTe active region and buffer layer on Si substrate. And in the range of the LW-band, the quantum efficiency of the heterojunction photodiode increases by 35.5%. Furthermore, the heterojunction photodiode acquires the narrow-band response spectrum desired in the application of the LW IRFPA detectors as the p+-on-n homojunction photodiode with the optical filter. Finally, the smaller bulk resistance of its heavily doped N-type layer ensures the uniformity of the pixel series resistance in the large format IRFPAs.

  4. The characteristic analysis and optimization design for HgCdTe TDI infrared detector array

    NASA Astrophysics Data System (ADS)

    Dong, Mei-feng; Chen, Xing; Qiu, Guang-yin; Xie, Xiao-hui

    2011-08-01

    Time Delay Integration (TDI) is an effective approach for high sensitive infrared detectors. According to the principle of the TDI, the central distance of pixel along the time delay integral direction is closely linked with the specific application requirements. So the optimization design, such as the area of pixels and their distance, plays an important role to improve the performance of TDI detectors. The crosstalk between pixels is a crucial factor that results in the decline of detector Modulation Transfer Function (MTF), and then affects the imaging quality. In this paper the optimization design rule for the arrangement of pixel has been investigated. The results show that the main method to appreciate it is reducing the crosstalk between pixels and enhancing detectivity. Chips of which pixel areas and edge intervals are different but with same distance were designed for the experiments. The optical and electrical measurements were carried out for these chips and the optimized structure was obtained. In addition, relationships between the crosstalk and parameters of material, pixel structure were analyzed based on the experiment data. According to the comprehensive analysis of the measurement data, we obtained the optimum design for specific HgCdTe TDI infrared detector. Meanwhile it is also a well reference for other HgCdTe TDI detector structure design.

  5. Hg-Cu-Bearing Metal-Sulfide Assemblage in the H3 Chondrite Tieschitz: Important Carriers of Pristine Hg and Possibly Cd-Isotopic Signatures in the Early Solar System

    NASA Astrophysics Data System (ADS)

    Caillet-Komorowski, C.; El Goresy, A.; Miyahara, M.; Boudouma, O.; Ma, C.

    2012-09-01

    The study of a unique assemblage consisting of metallic Hg, HgS, Cu-sulfide and native Cu in the matrix of Tieschitz allows for the first time to determine the isotopic abundance of the Hg isotopes both in matrix and chondrules (and potentially Cd).

  6. A "turn-on" carbon nanotube-Ag nanoclusters fluorescent sensor for sensitive and selective detection of Hg2+ with cyclic amplification of exonuclease III activity.

    PubMed

    Wang, Guangfeng; Xu, Gang; Zhu, Yanhong; Zhang, Xiaojun

    2014-01-21

    With exonuclease III activity on DNA hybrids containing thymine-Hg(2+)-thymine, a label-free ultrasensitive "turn-on" fluorescent sensor involving "quenching" and "reappearing" processes based on a carbon nanotube-Ag nanoclusters system is demonstrated for amplified determination of Hg(2+). PMID:24292243

  7. Time resolved photoluminescence spectroscopy of narrow gap Hg{sub 1−x}Cd{sub x}Te/Cd{sub y}Hg{sub 1−y}Te quantum well heterostructures

    SciTech Connect

    Morozov, S. V.; Rumyantsev, V. V. Antonov, A. V.; Kadykov, A. M.; Maremyanin, K. V.; Kudryavtsev, K. E.; Gavrilenko, V. I.; Mikhailov, N. N.; Dvoretskii, S. A.

    2014-07-14

    Photoluminescence (PL) spectra and kinetics of narrow gap Hg{sub 1−x}Cd{sub x}Te/Cd{sub y}Hg{sub 1−y}Te quantum well (QW) heterostructures grown by molecular beam epitaxy technique are studied. Interband PL spectra are observed from 18 K up to the room temperature. Time resolved studies reveal an additional PL line with slow kinetics (7 μs at 18 K) related to deep defect states in barrier layers. These states act as traps counteracting carrier injection into QWs. The decay time of PL signal from QW layers is about 5 μs showing that gain can be achieved at wavelengths 10–20 μm by placing such QWs in HgCdTe structures with waveguides.

  8. Epitaxial growth of HgCdTe 1.55-um avalanche photodiodes by molecular beam epitaxy

    NASA Astrophysics Data System (ADS)

    de Lyon, Terence J.; Baumgratz, B.; Chapman, G. R.; Gordon, E.; Hunter, Andrew T.; Jack, Michael D.; Jensen, John E.; Johnson, W.; Johs, Blaine D.; Kosai, K.; Larsen, W.; Olson, G. L.; Sen, M.; Walker, B.

    1999-04-01

    Separate absorption and multiplication avalanche photodiode (SAM-APD) device structures, operating in the 1.1 - 1.6 micrometer spectral range, have been fabricated in the HgCdTe material system by molecular-beam epitaxy. These HgCdTe device structures, which offer an alternative technology to existing III-V APD detectors, were grown on CdZnTe(211)B substrates using CdTe, Te, and Hg sources with in situ In and As doping. The alloy composition of the HgCdTe layers was adjusted to achieve both efficient absorption of IR radiation in the 1.1 - 1.6 micrometer spectral range and low excess-noise avalanche multiplication. To achieve resonant enhancement of hole impact ionization from the split-off valence band, the Hg(subscript 1-x)Cd(subscript x)Te alloy composition in the gain region of the device, x equals 0.73, was chosen to achieve equality between the bandgap energy and spin-orbit splitting. The appropriate value of this alloy composition was determined from analysis of the 300 K bandgap and spin-orbit splitting energies of a set of calibration layers, using a combination of IR transmission and spectroscopic ellipsometry measurements. MBE-grown APD epitaxial wafers were processed into passivated mesa-type discrete device structures and diode mini-arrays using conventional HgCdTe process technology. Device spectral response, dark current density, and avalanche gain measurements were performed on discrete diodes and diode mini- arrays on the processed wafers. Avalanche gains in the range of 30 - 40 at reverse bias of 85 - 90 V and array-median dark current density below 2 X 10(superscript -4) A/cm(superscript 2) at 40 V reverse bias have been demonstrated.

  9. A Review of the Characterization Techniques for the Analysis of Etch Processed Surfaces of HgCdTe and Related Compounds

    NASA Astrophysics Data System (ADS)

    Stoltz, A. J.; Benson, J. D.; Jaime-Vasquez, M.; Smith, P. J.; Almeida, L. A.; Jacobs, R.; Markunas, J.; Brogden, K.; Brown, A.; Lennon, C.; Maloney, P.; Supola, N.

    2014-09-01

    HgCdTe is the material system of choice for many infrared sensing applications. Growth of this material can often be challenging. However, processing of this material system can be equally as challenging. Incorrect processing can cause shunting, surface inversion, or high surface recombination velocities that can be detrimental. In order to produce an effective device in HgCdTe, one needs to understand what happens to the HgCdTe surface. Factors like the chemical termination of the HgCdTe surface, surface roughness, and surface reconstruction after a process is performed can dramatically affect the performance of devices made with HgCdTe. We will review different surface characterization techniques and how these techniques can be used conventionally and unconventionally, and how different processes can affect the surfaces of HgCdTe and related compounds.

  10. Fractionation distribution and preliminary ecological risk assessment of As, Hg and Cd in ornithogenic sediments from the Ross Sea region, East Antarctica.

    PubMed

    Lou, Chuangneng; Liu, Xiaodong; Nie, Yaguang; Emslie, Steven D

    2015-12-15

    To evaluate mobility of toxic elements and their potential ecological risk caused by seabird biovectors, the fractionation distributions of arsenic (As), mercury (Hg) and cadmium (Cd) were investigated in three ornithogenic sediment profiles from the Ross Sea region, East Antarctica. The results show residual As holds a dominant position, and Hg mainly derives from residual, organic matter-bound and humic acid-bound fractions, indicating weak mobility of As and Hg. However, exchangeable Cd occupies a considerable proportion in studied samples, suggesting Cd has strong mobility. The preliminary evaluation of Sediment Quality Guidelines (SGQs) shows adverse biological effects may occur occasionally for As and Cd, and rarely for Hg. Using Risk Assessment Code (RAC), the ecological risk is assessed at moderate, low and very high for As, Hg and Cd pollution, respectively. Organic matter derived from guano is the main factor controlling the mobility of Hg and Cd through adsorption and complexation. PMID:26322729

  11. Temporal variability of bioavailable Cd, Hg, Zn, Mn and Al in an upwelling regime.

    PubMed

    Lares, M Lucila; Flores, Muñoz Gilberto; Lara-Lara, Ruben

    2002-01-01

    Monthly variability of Cd, Hg, Zn, Mn and Al concentrations in mussels (Mytilus californianus) soft tissue and brown seaweed (Macrocystis pyrifera) was studied at a pristine rocky shore off San Quintin Bay, Baja California, México. The results were related to climatic and hydrographic conditions and to the physiological state of the mussels (condition index) by correlation analysis and principal component analysis (PCA). A "normalization" to account for the variability induced by the physiological state of the mussel was performed. The PCA was performed in two ways to relate the environmental variables and the condition index to: (1) the metal concentrations in mussels, and (2) the "normalized" mussel concentrations. The association of the variability of Cd with the upwelling season was revealed in both PCAs. The temporal variability of this metal in mussels was highly correlated to that in seaweed, suggesting that the dissolved phase determined the variability of Cd in mussels. However, for Hg, Zn, Mn and Al the results from both PCAs were different. The first PCA showed the relationship of these metals to pluvial precipitation and to the condition index. The PCA for the normalized mussel concentrations showed that, after eliminating the effect of the condition index, only Al was related to pluvial precipitation. Manganese, and to a less degree Zn, were related to these metals in seaweed. Because zinc is an essential element in mussels, some regulation of their internal concentrations is likely. Mercury was not detected in seaweed, but because of its reactive nature, it is not expected that the dissolved fraction could be a significant pathway; therefore, it can be concluded that its temporal variability was determined by the variability in the condition index only. PMID:12442783

  12. Minority carrier lifetime in iodine-doped molecular beam epitaxy-grown HgCdTe

    SciTech Connect

    Madni, I.; Umana-Membreno, G. A.; Lei, W.; Gu, R.; Antoszewski, J.; Faraone, L.

    2015-11-02

    The minority carrier lifetime in molecular beam epitaxy grown layers of iodine-doped Hg{sub 1−x}Cd{sub x}Te (x ∼ 0.3) on CdZnTe substrates has been studied. The samples demonstrated extrinsic donor behavior for carrier concentrations in the range from 2 × 10{sup 16} cm{sup −3} to 6 × 10{sup 17} cm{sup −3} without any post-growth annealing. At a temperature of 77 K, the electron mobility was found to vary from 10{sup 4} cm{sup 2}/V s to 7 × 10{sup 3} cm{sup 2}/V s and minority carrier lifetime from 1.6 μs to 790 ns, respectively, as the carrier concentration was increased from 2 × 10{sup 16} cm{sup −3} to 6 × 10{sup 17} cm{sup −3}. The diffusion of iodine is much lower than that of indium and hence a better alternative in heterostructures such as nBn devices. The influence of carrier concentration and temperature on the minority carrier lifetime was studied in order to characterize the carrier recombination mechanisms. Measured lifetimes were also analyzed and compared with the theoretical models of the various recombination processes occurring in these materials, indicating that Auger-1 recombination was predominant at higher doping levels. An increase in deep-level generation-recombination centers was observed with increasing doping level, which suggests that the increase in deep-level trap density is associated with the incorporation of higher concentrations of iodine into the HgCdTe.

  13. Dislocation Reduction in HgCdTe Mesa Structures Formed on CdTe/Si

    NASA Astrophysics Data System (ADS)

    Simingalam, Sina; Pattison, James; Chen, Yuanping; Wijewarnasuriya, Priyalal; Rao, Mulpuri V.

    2016-09-01

    Mercury cadmium telluride (MCT) epilayers have been grown on CdTe/Si using molecular beam epitaxy and 8- μm-deep mesa structures formed using plasma etching. Following previous work done on etching mesas and subjecting material to thermal cycle annealing, we set out to determine the limits and underlying physics of dislocation reduction in mesa-etched and annealed MCT. This paper describes the dependence of dislocation reduction on anneal time, cycle annealing, temperature, and etch depth. We show dislocation density reduction below 3 × 105 cm-2 in 10- μm-wide, long-bar mesas along the [0bar{1}1] orientation with only a 5-min anneal at 400°C.

  14. Dislocation Reduction in HgCdTe Mesa Structures Formed on CdTe/Si

    NASA Astrophysics Data System (ADS)

    Simingalam, Sina; Pattison, James; Chen, Yuanping; Wijewarnasuriya, Priyalal; Rao, Mulpuri V.

    2016-04-01

    Mercury cadmium telluride (MCT) epilayers have been grown on CdTe/Si using molecular beam epitaxy and 8-μm-deep mesa structures formed using plasma etching. Following previous work done on etching mesas and subjecting material to thermal cycle annealing, we set out to determine the limits and underlying physics of dislocation reduction in mesa-etched and annealed MCT. This paper describes the dependence of dislocation reduction on anneal time, cycle annealing, temperature, and etch depth. We show dislocation density reduction below 3 × 105 cm-2 in 10-μm-wide, long-bar mesas along the [0bar{1}1] orientation with only a 5-min anneal at 400°C.

  15. Stimulated radiation of optically pumped Cd {sub x}Hg{sub 1-x} Te-Based heterostructures at room temperature

    SciTech Connect

    Andronov, A. A.; Nozdrin, Yu. N.; Okomel'kov, A. V. Babenko, A. A.; Varavin, V. S. Ikusov, D. G.; Smirnov, R. N.

    2008-02-15

    The experimental observation of stimulated radiation of optically pumped Cd{sub x}Hg{sub 1-x} Te-based heterostructures in the wavelength range of 1.4-4.5 {mu}m is reported. In the experiments, graded-gap Cd {sub x}Hg{sub 1-x} Te samples grown on GaAs and Si substrates by molecular beam epitaxy were used. Superluminescence of such structures was observed at 77-300 K under the pulsed pumping of the samples by a Nd:YAG laser at a wavelength of 1.064 {mu}m. At room temperature, stimulated radiation was observed at wavelengths of 1.4-1.7 {mu}m. The obtained experimental data are the first results on the observation of stimulated radiation from graded-gap Cd {sub x} Hg{sub 1-x} Te structures on Si and GaAs substrates at these wavelengths at room temperature.

  16. Theoretical Study of Midwave Infrared HgCdTe nBn Detectors Operating at Elevated Temperatures

    NASA Astrophysics Data System (ADS)

    Akhavan, Nima Dehdashti; Jolley, Gregory; Umana-Membreno, Gilberto A.; Antoszewski, Jarek; Faraone, Lorenzo

    2015-09-01

    We report a theoretical study of mercury cadmium telluride (HgCdTe) unipolar n-type/barrier/ n-type (nBn) detectors for midwave infrared (MWIR) applications at elevated temperatures. The results obtained indicate that the composition, doping, and thickness of the barrier layer in MWIR HgCdTe nBn detectors can be optimized to yield performance levels comparable with those of ideal HgCdTe p- n photodiodes. It is also shown that introduction of an additional barrier at the back contact layer of the detector structure (nBnn+) leads to substantial suppression of the Auger generation-recombination (GR) mechanism; this results in an order-of-magnitude reduction in the dark current level compared with conventional nBn or p- n junction-based detectors, thus enabling background-limited detector operation above 200 K.

  17. Compositional redistribution during casting of Hg sub 0.8 Cd sub 0.2 Te alloys

    NASA Technical Reports Server (NTRS)

    Su, Ching-Hua; Perry, G. L. E.; Szofran, F. R.; Lehoczky, S. L.

    1986-01-01

    A series of Hg(0.8)Cd(0.2)Te ingots was cast both vertically and horizontally under well-defined thermal conditions by using a two-zone furnace with isothermal heat-pipe liners. The main objective of the experiments was to establish correlations between casting parameters and compositional redistribution and to develop ground-based data for a proposed flight experiment of casting of Hg(1-x)Cd(x)Te alloys under reduced gravity conditions. The compositional variations along the axial and radial directions were determined by precision density measurements, infrared transmission spectra, and X-ray energy dispersion spectrometry. Comparison between the experimental results and a numerical simulation of the solidification process of Hg(0.8)Cd(0.2)Te is described.

  18. State-of-the-Art HgCdTe at Raytheon Vision Systems

    NASA Astrophysics Data System (ADS)

    Fulk, C.; Radford, W.; Buell, D.; Bangs, J.; Rybnicek, K.

    2015-09-01

    Dark current density data recorded over the past 14 years at Raytheon Vision Systems on short-wavelength infrared (SWIR) and medium-wavelength infrared (MWIR) devices were examined. This included HgCdTe detector arrays grown by liquid-phase epitaxy on CdZnTe and molecular beam epitaxy on both silicon and CdZnTe substrates. This study analyzed zero-bias resistance-area product and current-voltage measurements from test structure assemblies included on every detector wafer. The data span cutoff wavelengths from 1.7 μm to 7.5 μm and operating temperatures from 40 K to 300 K. A basis is derived for a simple manufacturing trend model for a wide range of cutoffs and temperatures. This model uses a function similar to Tennant's Rule'07 but includes a generation-recombination (GR) term. Dark current densities below the test set limit are extrapolated assuming GR-limited performance. Model assumptions are tested using sensor chip assembly (SCA) median dark current density values at the same inverse cutoff-temperature products. This model allows probabilistic determination of array manufacturability and prediction of yield, and provides a statistical basis for Raytheon's state-of-the-art performance.

  19. High Performance MWIR and LWIR (Hg,Cd)Te Heterostructure Photodiodes

    NASA Astrophysics Data System (ADS)

    Vydyanath, H. R.; Ward, P. B.; Hampton, S. R.; Fishman, L.; Slawinski, J.; Devaney, C.; Ellsworth, J.; Krueger, T.

    1986-11-01

    (Hg,Cd)Te heterostructures have been grown liquid phase epitaxially from tellurium rich solutions on CdTe and (Cd,Zn)Te substrates. Both MWIR detectors sensitive in the 3-5 μm spectral region and LWIR detectors sensitive in the 8-14 µm spectral region have been fabricated in the heterostructures. Detectors with high RoA (low noise) and high quantum efficiency (high signal) have been fabricated. For the MWIR detectors, quantum efficiency in excess of 75 percent and RoA values in excess of 107 ohm cm2 at 80K have been demonstrated for λCo ~ 5.5 µm. For the LWIR detectors RoA values of ~ 106 ohm cm2 have been demonstrated at 40K for λCo ~ 11 μm. A correlation of the trap energies established via carrier lifetime and DLTS measurements with the depletion width - capacitance data indicates the p-n junction to be located at the heterostructure interface.

  20. History of the "Detector Materials Engineering" Crystal Growth Process for Bulk Hg1- x Cd x Te

    NASA Astrophysics Data System (ADS)

    Higgins, W. M.; Nelson, D. A.; Roy, R. G.; Murosako, R. P.; Lancaster, R. A.; Tower, J.; Norton, P.

    2013-11-01

    This paper reviews the history and technology of a bulk Hg1- x Cd x Te crystal growth process that was developed in the early 1980s at Honeywell Electro-Optics Division (presently BAE Systems, Electronic Solutions). The crystal growth process name, DME, was an acronym for the department name: Detector Materials Engineering. This was an accelerated crucible rotation technique (ACRT) vertical traveling heater method growth process. Crystal growth occurred in the pseudobinary Hg1- x Cd x Te system. ACRT mixing allowed the lower-density, higher- x-value Hg1- x Cd x Te growth nutrient in the upper region of the ampoule to replenish the depleted melt and allowed the growth of constant- x-value, higher-density Hg1- x Cd x Te. The material grown by this research and production growth process yielded single crystals that had improved purity, compositional uniformity, precipitate density, and reproducibility in comparison with solid-state recrystallization and other bulk Hg1- x Cd x Te growth techniques. Radial and longitudinal nonuniformities in x-value for Hg1- x Cd x Te were reduced to <0.0008/cm. The net electrically active background impurities did not exceed 1 × 1014 cm-3. Electron mobilities in excess of 1.5 × 106 cm2/V-s were observed at 77 K. Structural defects of less than 104 cm-2 were measured. Te precipitates were not observed. As a result of these material improvements, long-wavelength infrared (LWIR) photoconductive devices fabricated from DME material had highly desired performance characteristics.

  1. Molecular-beam epitaxy growth and in situ arsenic doping of p-on-n HgCdTe heterojunctions

    NASA Astrophysics Data System (ADS)

    Arias, Jose; Zandian, M.; Pasko, J. G.; Shin, S. H.; Bubulac, L. O.; DeWames, R. E.; Tennant, W. E.

    1991-02-01

    In this paper we present, results on the growth of in situ doped p-on-n heterojunctions on HgCdTe epilayers grown on (211)B GaAs substrates by molecular-beam epitaxy (MBE). Long wavelength infrared (LWIR) photodiodes made with these grown junctions are of high performance. The n-type MBE HgCdTe/GaAs alloy epilayer in these structures was grown at Ts=185 °C and it was doped with indium (high 1014 cm-3 range) atoms. This epilayer was directly followed by the growth, at Ts=165 °C, of an arsenic-doped (1017-1018 cm-3 ) HgTe/CdTe superlattice structure which was necessary to incorporate the arsenic atoms as acceptors. After the structure was grown, a Hg annealing step was needed to interdiffuse the superlattice and obtain the arsenic-doped p-type HgCdTe layer above the indium-doped layer. LWIR mesa diodes made with this material have 77 K R0A values of 5×103, 81, 8.5, and 1.1 Ω cm2 for cutoff wavelengths of 8.0, 10.2, 10.8, and 13.5 μm, respectively; the 77 K quantum efficiency values for these diodes were greater than 55%. These recent results represent a significant step toward the demonstration of MBE as a viable growth technique for the in situ fabrication of large area LWIR focal plane arrays.

  2. First principles study on electronic structure and elastic properties of LaCd and LaHg

    SciTech Connect

    Devi, Hansa E-mail: gita-pagare@yahoo.co.in; Pagare, Gitanjali E-mail: gita-pagare@yahoo.co.in; Chouhan, S. S. E-mail: gita-pagare@yahoo.co.in; Sanyal, Sankar P.

    2014-04-24

    Full -potential linearized augmented plane wave method (FP- LAPW) has been used for the comparative study of electronic structure and elastic properties of CsCl-type LaCd and LaHg intermetallic compounds using generalized gradient approximation (GGA). The density of states at the Fermi Level, N (E{sub F}), is found to be 0.06 and 3.03 states/eV for LaCd and LaHg respectively. We report elastic constants for these compounds for the first time. The ductility/brittleness of these compounds has been analyzed using Pugh rule and Cauchy’s pressure.

  3. Thermoelectric properties of MBE-grown HgCdTe-based superlattices from 100K to 300K

    NASA Astrophysics Data System (ADS)

    Zhang, Kejia; Yadav, Abhishek; Shao, Lei; Bommena, Ramana; Zhao, Jun; Velicu, Silviu; Pipe, Kevin P.

    2016-07-01

    We report on the thermoelectric properties of long-period HgCdTe superlattices (MCT SLs) from cryogenic temperature to room temperature. We find that the thermal conductivity is lower than the alloy value especially at low temperatures, the electrical conductivity is similar to that of alloy films, and the Seebeck coefficient is comparable to other SLs. Calculations based on Rytov's elastic model show that the phonon group velocity is reduced due to folding by more than a factor of two relative to its value in bulk CdTe or HgTe. Thermal conductivity is found to be relatively constant over a wide range of temperatures.

  4. Electrostatic assembles and optical properties of Au CdTe QDs and Ag/Au CdTe QDs

    NASA Astrophysics Data System (ADS)

    Yang, Dongzhi; Wang, Wenxing; Chen, Qifan; Huang, Yuping; Xu, Shukun

    2008-09-01

    Au-CdTe and Ag/Au-CdTe assembles were firstly investigated through the static interaction between positively charged cysteamine-stabilized CdTe quantum dots (QDs) and negatively charged Au or core/shell Ag/Au nano-particles (NCs). The CdTe QDs synthesized in aqueous solution were capped with cysteamine which endowed them positive charges on the surface. Both Au and Ag/Au NCs were prepared through reducing precursors with gallic acid obtained from the hydrolysis of natural plant poly-phenols and favored negative charges on the surface of NCs. The fluorescence spectra of CdTe QDs exhibited strong quenching with the increase of added Au or Ag/Au NCs. Railey resonance scattering spectra of Au or Ag/Au NCs increased firstly and decreased latter with the concentration of CdTe QDs, accompanied with the solution color changing from red to purple and colorless at last. Experimental results on the effects of gallic acid, chloroauric acid tetrahydrate and other reagents demonstrated the static interaction occurred between QDs and NCs. This finding reveals the possibilities to design and control optical process and electromagnetic coupling in hybrid structures.

  5. Epitaxial HgCdTe/CdTe Photodiodes For The 1 -3 μm Spectral Region

    NASA Astrophysics Data System (ADS)

    Shin, S. H.; Pasko, J. G.; Cheung, D. T.

    1981-07-01

    Hgi-xCdxTe epitaxial layers have been successfully grown in various compositions, for 1-3 μm applications. n+/p junctions are formed either by a standard B-implantation into as-grown p-type layers or by doubly grown p- and n-layers. The SWIR HgCdTe photodiodes exhibit quantum efficiencies of 55-65% without AR coating. For the diodes with 1.39 μm cut-off at room temperature, the zero bias detector resistance-area (RoA) product is 4 x 10 4 Ω-cm2, and the dark current density is ~ 1 x 10 -4 A/cm2 at half-breakdown voltage. The same values of ~ 104 Ω-cm2 RoA products have also been measured for 2.4 μm cut-off photodiodes at 195K. The energy gap and temperature dependence of RoA product is in excellent agreement with the bulk limited generation-recombination model. The breakdown voltages of SWIR diodes vary from 12 volts to greater than 130 volts, depending on the Cd composition (x) and base carrier concentrations.

  6. Measured thermal diffusivity of Hg(1-x)Cd(x)Te solids and melts

    NASA Technical Reports Server (NTRS)

    Holland, L. R.; Taylor, R. E.

    1983-01-01

    The thermal diffusivity of Hg(1-x)Cd(x)Te melts is found to rise rapidly with temperature to values characteristic of metals. Solid and melt diffusivities for values of x from 0 to 0.3 and over a temperature range from 150 to 900 C have been determined by the laser flash method of Parker, Taylor, and Cowan. The diffusivity decreases from a maximum at x = 0 in both the solid and the liquid, with the values observed at x = 0.3 being about 40 percent of those for x = 0. The solid diffusivity for x = 0 is 1.7 sq mm/s at 150 C, decreasing to 0.7 sq mm/s at the melting point. The x = 0 liquid diffusivity increases from 0.7 sq mm/s at the melting point to 3.5 sq mm/s at 900 C.

  7. Surface energies for molecular beam epitaxy growth of HgTe and CdTe

    NASA Astrophysics Data System (ADS)

    Berding, M. A.; Krishnamurthy, Srinivasan; Sher, A.

    1991-10-01

    We present results for the surface binding energies for HgTe and CdTe that will serve as input for molecular beam epitaxy growth models. We have found that the surface binding energies are surface orientation dependent and are not simply proportional to the number of first-neighbor bonds being made to the underlying layer. Moreover, because of the possibility of charge transfer between cation and anion surface states, one may have large differences between the binding energy for the first and the last atom in a given layer, and these differences will be different for the narrow-gap, less ionic materials than for the wide gap, ionic materials. We also find that the surface states associated with an isolated surface atom or vacancy are extended in materials with small gaps and small effective masses, and thus call into question the modeling of surface binding by simple pair interactions.

  8. Low noise HgCdTe 128 x 128 SWIR FPA for Hubble space telescope

    NASA Technical Reports Server (NTRS)

    Blessinger, Michael; Vural, Kadri; Kleinhans, William; Rieke, Marcia J.; Thompson, Rodger; Rasche, Robert

    1989-01-01

    Large area focal plane arrays of unprecedented performance were developed for use in Near Infrared Camera and Multi-Object Spectrometer (NICMOS), a proposed Hubble Space Telescope refurbishment instrument. These FPAs are 128x128-element, HgCdTe hybrid arrays with a cutoff wavelength of 2.5 microns. The multiplexer consists of a CMOS field effect transistor switch array with a typical mean readout noise of less than 30 electrons. The detectors typically have a mean dark current of less than 10 electrons/s at 77 K, with currents below 2 electrons measured at 60 K (both at 0.5 V reverse bias). The mean quantum efficiency is 40 to 60 percent at 77 K for 1.0 to 2.4 microns. Functional pixel yield is typically greater than 99 percent, and the power consumption is approximately 0.2 mW (during readout only).

  9. Time-dependent electron transport in HgTe/CdTe quantum wells

    NASA Astrophysics Data System (ADS)

    Ding, Kai-He; Zhou, Guanghui

    2014-02-01

    Based on the Floquet theory and Keldysh's nonequilibrium Green's function methods, we study the electron transport through the HgTe/CdTe quantum wells (QWs) irradiated by a monochromatic laser field. We find that when the laser field is applied, the edge states are split into a series of sidebands. When the Fermi level lies among these sidebands, the quantized plateau of the conductance is destroyed. Instead, the conductance versus the radiation frequency exhibits the successive oscillation peaks corresponding to the resonant tunneling through the sidebands of the edge states. The resonant interaction between the quasiparticles and the radiation field opens the gaps in the crossing region of the sidebands, which can be tuned by the radiation strength and frequency. This leads to the shift of the oscillation peaks in the conductance. We also show that the amplitudes of the oscillation peaks in the conductance are governed by the radiation strength and frequency.

  10. Characterization of the Microstructure of HgCdTe with p-Type Doping

    NASA Astrophysics Data System (ADS)

    Lobre, C.; Jouneau, P.-H.; Mollard, L.; Ballet, P.

    2014-08-01

    Nitrogen, phosphorus, arsenic, and antimony ions were implanted in Hg0.3Cd0.7Te (MCT) layers under the same implantation conditions. An identical annealing process was then applied to these layers to eradicate implantation damage and to activate the impurities. Implantation damage was investigated by direct visualization, by use of bright-field scanning transmission electron microscopy (BF-STEM). Secondary-ion mass spectrometry was used to investigate impurity diffusion on annealing. The combination of these two techniques revealed the significant effect of structural implantation damage on the diffusion process. Annealed layers were then investigated by high-resolution STEM imaging and energy-dispersive x-ray spectroscopy in STEM (STEM-EDX). This approach enables direct visualization and, therefore, further description of arsenic and antimony-rich nanocrystals.

  11. Low dark current LWIR HgCdTe focal plane arrays at AIM

    NASA Astrophysics Data System (ADS)

    Haiml, M.; Eich, D.; Fick, W.; Figgemeier, H.; Hanna, S.; Mahlein, M.; Schirmacher, W.; Thöt, R.

    2016-05-01

    Cryogenically cooled HgCdTe (MCT) quantum detectors are unequalled for applications requiring high imaging as well as high radiometric performance in the infrared spectral range. Compared with other technologies, they provide several advantages, such as the highest quantum efficiency, lower power dissipation compared to photoconductive devices, and fast response times, hence outperforming micro-bolometer arrays. AIM will present its latest results on n-on-p as well as p-on-n low dark current planar MCT photodiode focal plane detector arrays at cut-off wavelengths >11 μm at 80 K. Dark current densities below the Rule'07 have been demonstrated for n-on-p devices. Slightly higher dark current densities and excellent cosmetics with very low cluster and point defect densities have been demonstrated for p-on-n devices.

  12. EBIC study of resistive photosensitive elements based on HgCdTe

    SciTech Connect

    Vergeles, P. S.; Krapukhin, V. V.; Yakimov, E. B.

    2007-02-15

    Photosensitive resistive elements based on HgCdTe with decreased photosensitivity as a result of prolonged operation are studied by the method of electron-beam-induced current in a scanning electron microscope. It is shown that the degradation processes in these elements are related to the appearance of regions with a lowered sensitivity in the vicinity of contacts. Distribution of the induced current for these inhomogeneous elements was simulated. It is shown that a comparison of the measured and calculated distributions of the induced-current signal makes it possible to reveal the most probable causes of the inhomogeneous decrease in the photosensitivity. The comparison performed showed that the most likely cause of a decrease in the photosensitivity of the elements under study was an increase in the donor concentration in the near-contact regions.

  13. Numerical Simulation of the Modulation Transfer Function in HgCdTe Detector Arrays

    NASA Astrophysics Data System (ADS)

    Pinkie, Benjamin; Bellotti, Enrico

    2014-08-01

    In this work, we develop a method for simulating the modulation transfer function (MTF) of infrared detector arrays, which is based on numerical evaluation of the detector physics. The finite-difference time-domain and finite element methods are used to solve the electromagnetic and electrical equations for the device, respectively. We show how the total MTF can be deconvolved to examine the effects of specific physical processes. We introduce the MTF area difference and use it to quantify the effectiveness of several crosstalk mitigation techniques in improving the system MTF. We then apply our simulation methods to two-thirds generation mercury cadmium telluride (HgCdTe) detector architectures. The methodology is general, can be implemented with commercially available software, has experimentally realizable analogs, and is extendable to other material systems and device designs.

  14. Experimental determination of diffusion length in SWIR HgCdTe photodiodes

    NASA Astrophysics Data System (ADS)

    Jia, Jia; Chen, Guibin; Li, Xiangyang; Gong, Haimei

    2005-01-01

    Minority carrier diffusion length is a key parameter of material quality and gives an indication of diode performance. It is also one important parameter when considering the increase of the effective optical sensitive area caused by the lateral diffusion and the crosstalk between individual detectors on a focal plane array (FPA). In this paper, we perform diffusion length measurements with two methods on short wavelength infrared (SWIR) HgCdTe photovoltaic devices. One method is based on the different behaviors of electrons and holes in a variation magnetic field B and their effects on the saturation current density J0. The other method is an optical characterization technique called Laser Beam Induced Current (LBIC). The results were in good agreement with each other.

  15. Computational materials science: an increasingly reliable engineering tool (example: defects in HgCdTe alloys)

    NASA Astrophysics Data System (ADS)

    Sher, Arden; van Schilfgaarde, M.; Berding, M. A.

    1998-04-01

    Computational materials science has evolved in recent years into a reliable theory capable of predicting not only idealized materials and device performance properties, but also those that apply to practical engineering developments. The codes run on workstations and even now are fast enough to be useful design tools. A review will be presented of the current status of this rapidly advancing field.As a demonstration of the power of the methods, predictions of the native point and complex defect, and impurity densities for the Hg0.8Cd0.2Te alloy as functions of external processing conditions will be treated. Where measurements have been done, the observed values agree well with the predictions. As an example, we find that As incorporates predominately on the cation sublattice, if the material is grown form the Te side of the existence curve, whereas it tends to reside on the anion sublattice in Hg-saturated growth. On the cation sublattice As is a donor. It is an acceptor on the Te sublattice. We have devised a post-MBE- growth processing method to encourage the transfer of As form the cation to the anion sublattice. Those aspects of the proposed process that have been tested work.

  16. Improved model for surface shunt resistance due to passivant for HgCdTe photoconductive detectors

    NASA Astrophysics Data System (ADS)

    Bhan, R. K.; Dhar, V.

    2003-12-01

    We present the results of calculations for surface shunt resistance due to the passivant fixed charge density (Qss) in n-HgCdTe photoconductive (PC) detectors. To the best of our knowledge, this is the first detailed calculation involving the actual majority carrier profile at the accumulated surface. The effect of surface field (or potential) due to heavily accumulated density of majority carriers on surface mobility (mus) has been investigated in detail by employing the Schrieffer and Goldstein models using random diffuse scattering. Additionally, the effect of lateral field (applied to these devices) on surface mobility is included by invoking the model of Yoo et al. The above effects were not taken into account in previous simplified models. For narrow-band, n-type HgCdTe the effects of carrier degeneracy and band non-parabolicity cannot be neglected. In this work, a one-dimensional model including these effects has been developed to evaluate the detector resistance and responsivity. A proper two-layer (bulk and surface) responsivity model is developed. The results are compared with the widely-used approximate one-layer model of Reine and with the step model proposed by Bhan and Gopal. It is shown that, for the Reine model, the agreement with the present model depends on the value of mus chosen. The trend of the step model agrees with the Reine model, but both models show disagreement with the present one-layer and two-layer profile models for Qss approx (1010-1012) cm-2.

  17. Linear mode photon counting with the noiseless gain HgCdTe e-avalanche photodiode

    NASA Astrophysics Data System (ADS)

    Beck, Jeffrey D.; Scritchfield, Richard; Mitra, Pradip; Sullivan, William W.; Gleckler, Anthony D.; Strittmatter, Robert; Martin, Robert J.

    2014-08-01

    A linear mode photon counting focal plane array using HgCdTe mid-wave infrared (MWIR) cutoff electron initiated avalanche photodiodes (e-APDs) has been designed, fabricated, and characterized. The broad spectral range (0.4 to 4.3 μm) is unique among photon counters, making this a "first of its kind" system spanning the visible to the MWIR. The low excess noise [F(M)≈1] of the e-APDs allows for robust photon detection while operating at a stable linear avalanche gain in the range of 500-1000. The readout integrated circuit (ROIC) design included a very high gain-bandwidth product resistive transimpedance amplifier (3×1013 Ω-Hz) and a 4 ns output digital pulse width comparator. The ROIC had 16 high-bandwidth analogs and 16 low-voltage differential signaling digital outputs. The 2×8 array was integrated into an LN2 Dewar with a custom leadless chip carrier and daughter board design that preserved high-bandwidth analog and digital signal integrity. The 2×8 e-APD arrays were fabricated on 4.3 μm cutoff HgCdTe and operated at 84 K. The measured dark currents were approximately 1 pA at 13 V bias where the measured avalanche photodiode gain was 500. This translates to a predicted dark current induced dark count rate of less than 20 KHz. Single photon detection was achieved with a photon pulse signal-to-noise ratio of 13.7 above the amplifier noise floor. A photon detection efficiency of 50% was measured at a photon background limited false event rate of about 1 MHz. The measured jitter was in the range of 550-800 ps. The demonstrated minimum time between distinguishable events was less than 10 ns.

  18. B+ Ion Implanted n+ on P HgCdTe Photovoltaic Arrays

    NASA Astrophysics Data System (ADS)

    Shi, Yanli

    2005-10-01

    B+ ion implantation technology has been utilized to fabricate n+ on P HgCdTe photovoltaic arrays with the HgCdTe epitaxial materials grown by the liquid phase epitaxial method. The effects of implanting energy and dose on doping profile and approximate junction depth were calculated in detail; the calculated results are well consistent with the measurement results by the second ion mass spectrum experimental technique (SIMS). The 10×10 photodiode arrays in which each pixel size is nominally 20×20 μm2 and the pitch is 30 μm were made to investigate the electro-optic performance of devices. The device characterization such as array uniformity and optical crosstalk was nondestructively investigated using a scanning laser microscope. The two-dimensional maps of laser beam induced current (LBIC) signal have shown good uniformity for the fabricated arrays, and there is no optical crosstalk between the arrays for the B+ ion implantation conditions used at the implanting energy of 130 KeV and the dose of 2×1014 cm2. The primary performance of photodiodes the zero bias dynamic resistance junction area product R0A, infrared response spectrum, and the detectivity D* have been measured, and the typical values for the test photodiodes with cutoff wavelength of 9.2 μm measured at 77°K are: R0A = 13.5'Ω.cm2, average blackbody detectivity D* = 7.18×1010 cm Hz1/2W-1. By further optimizing the implantation conditions and the quality of materials, excellent performances of photovoltaic detectors can be expected.

  19. Comprehensive investigation of HgCdTe metalorganic chemical vapor deposition

    NASA Technical Reports Server (NTRS)

    Raupp, Gregory B.

    1993-01-01

    The principal objective of this experimental and theoretical research program was to explore the possibility of depositing high quality epitaxial CdTe and HgCdTe at very low pressures through metalorganic chemical vapor deposition (MOCVD). We explored two important aspects of this potential process: (1) the interaction of molecular flow transport and deposition in an MOCVD reactor with a commercial configuration, and (2) the kinetics of metal alkyl source gas adsorption, decomposition and desorption from the growing film surface using ultra high vacuum surface science reaction techniques. To explore the transport-reaction issue, we have developed a reaction engineering analysis of a multiple wafer-in-tube ultrahigh vacuum chemical vapor deposition (UHV/CVD) reactor which allows an estimate of wafer or substrate throughput for a reactor of fixed geometry and a given deposition chemistry with specified film thickness uniformity constraints. The model employs a description of ballistic transport and reaction based on the pseudo-steady approximation to the Boltzmann equation in the limit of pure molecular flow. The model representation takes the form of an integral equation for the flux of each reactant or intermediate species to the wafer surfaces. Expressions for the reactive sticking coefficients (RSC) for each species must be incorporated in the term which represents reemission from a wafer surface. The interactions of MOCVD precursors with Si and CdTe were investigated using temperature programmed desorption (TPD) in ultra high vacuum combined with Auger electron spectroscopy (AES). These studies revealed that diethyltellurium (DETe) and dimethylcadmium (DMCd) adsorb weakly on clean Si(100) and desorb upon heating without decomposing. These precursors adsorb both weakly and strongly on CdTe(111)A, with DMCd exhibiting the stronger interaction with the surface than DETe.

  20. Influence of Ag doping concentration on structural and optical properties of CdS thin film

    SciTech Connect

    Kumar, Pragati; Saxena, Nupur; Gupta, Vinay; Agarwal, Avinash

    2015-05-15

    This work shows the influence of Ag concentration on structural properties of pulsed laser deposited nanocrystalline CdS thin film. X-ray photoelectron spectroscopy (XPS) studies confirm the dopant concentration in CdS films and atomic concentration of elements. XPS studies show that the samples are slightly sulfur deficient. GAXRD scan reveals the structural phase transformation from cubic to hexagonal phase of CdS without appearance of any phase of CdO, Ag{sub 2}O or Ag{sub 2}S suggesting the substitutional doping of Ag ions. Photoluminescence studies illustrate that emission intensity increases with increase in dopant concentration upto 5% and then decreases for higher dopant concentration.

  1. Loading Ag nanoparticles on Cd(II) boron imidazolate framework for photocatalysis

    NASA Astrophysics Data System (ADS)

    Liu, Min; Zhang, De-Xiang; Chen, Shumei; Wen, Tian

    2016-05-01

    An amine-functionalized Cd(II) boron imidazolate framework (BIF-77) with three-dimensional open structure has been successfully synthesized, which can load Ag nanoparticles (NPs) for photocatalytic degradation of methylene blue (MB).

  2. Independently accessed back-to-back HgCdTe photodiodes: A new dual-band infrared detector

    NASA Astrophysics Data System (ADS)

    Reine, M. B.; Norton, P. W.; Starr, R.; Weiler, M. H.; Kestigian, M.; Musicant, B. L.; Mitra, P.; Schimert, T.; Case, F. C.; Bhat, Lb.; Ehsani, H.; Rao, V.

    1995-05-01

    We report the first data for a new two-color HgCdTe infrared detector for use in large dual-band infrared focal plane arrays (IRFPAs). Referred to as the independently accessed back-to-back photodiode structure, this novel dual-band HgCdTe detector provides independent electrical access to each of two spatially collocated back-to-back HgCdTe photodiodes so that true simultaneous and independent detection of medium wavelength (MW, 3-5 μm) and long wavelength (LW, 8-12 μm) infrared radiation can be accomplished. This new dual-band detector is directly compatible with standard backside-illuminated bump-interconnected hybrid HgCdTe IRFPA technology. It is capable of high fill factor, and allows high quantum efficiency and BLIP sensitivity to be realized in both the MW and LW photodiodes. We report data that demonstrate experimentally the key features of this new dual-band detector. These arrays have a unit cell size of 100 x 100 μm2, and were fabricated from a four-layer p-n-N-P HgCdTe film grown in situ by metalorganic chemical vapor deposition on a CdZnTe substrate. At 80K, the MW detector cutoff wavelength is 4.5 μm and the LW detector cutoff wavelength is 8.0 μm. Spectral crosstalk is less than 3%. Data confirm that the MW and LW photodiodes are electrically and radiometrically independent.

  3. Magnetic field effects on edge and bulk states in topological insulators based on HgTe/CdHgTe quantum wells with strong natural interface inversion asymmetry

    NASA Astrophysics Data System (ADS)

    Durnev, M. V.; Tarasenko, S. A.

    2016-02-01

    We present a theory of the electron structure and the Zeeman effect for the helical edge states emerging in two-dimensional topological insulators based on HgTe/HgCdTe quantum wells with strong natural interface inversion asymmetry. The interface inversion asymmetry, reflecting the real atomistic structure of the quantum well, drastically modifies both bulk and edge states. For the in-plane magnetic field, this asymmetry leads to a strong anisotropy of the edge-state effective g factor, which becomes dependent on the edge orientation. The interface inversion asymmetry also couples the counterpropagating edge states in the out-of-plane magnetic field leading to the opening of the gap in the edge-state spectrum by arbitrary small fields.

  4. Fabrication and application of a new modified electrochemical sensor using nano-silica and a newly synthesized Schiff base for simultaneous determination of Cd2+, Cu2+ and Hg2+ ions in water and some foodstuff samples.

    PubMed

    Afkhami, Abbas; Soltani-Felehgari, Farzaneh; Madrakian, Tayyebeh; Ghaedi, Hamed; Rezaeivala, Majid

    2013-04-10

    A new chemically modified carbon paste electrode was constructed and used for rapid, simple, accurate, selective and highly sensitive simultaneous determination of cadmium, copper and mercury using square wave anodic stripping voltammetry (SWASV). The carbon paste electrode was modified by N,N'-bis(3-(2-thenylidenimino)propyl)piperazine coated silica nanoparticles. Compared with carbon paste electrode, the stripping peak currents had a significant increase at the modified electrode. Under the optimized conditions (deposition potential, -1.100 V vs. Ag/AgCl; deposition time, 60s; resting time, 10s; SW frequency, 25 Hz; pulse amplitude, 0.15 V; dc voltage step height, 4.4 mV), the detection limit was 0.3, 0.1 and 0.05 ng mL(-1) for the determination of Cd(2+), Cu(2+) and Hg(2+), respectively. The complexation reaction of the ligand with several metal cations in methanol was studied and the stability constants of the complexes were obtained. The effects of different cations and anions on the simultaneous determination of metal ions were studied and it was found that the electrode is highly selective for the simultaneous determination of Cd(2+), Cu(2+) and Hg(2+). Furthermore, the present method was applied to the determination of Cd(2+), Cu(2+) and Hg(2+) in water and some foodstuff samples. PMID:23522108

  5. Status of HgCdTe Barrier Infrared Detectors Grown by MOCVD in Military University of Technology

    NASA Astrophysics Data System (ADS)

    Kopytko, M.; Jóźwikowski, K.; Martyniuk, P.; Gawron, W.; Madejczyk, P.; Kowalewski, A.; Markowska, O.; Rogalski, A.; Rutkowski, J.

    2016-06-01

    In this paper we present the status of HgCdTe barrier detectors with an emphasis on technological progress in metalorganic chemical vapor deposition (MOCVD) growth achieved recently at the Institute of Applied Physics, Military University of Technology. It is shown that MOCVD technology is an excellent tool for HgCdTe barrier architecture growth with a wide range of composition, donor/acceptor doping, and without post-grown annealing. The device concept of a specific barrier bandgap architecture integrated with Auger-suppression is as a good solution for high-operating temperature infrared detectors. Analyzed devices show a high performance comparable with the state-of-the-art of HgCdTe photodiodes. Dark current densities are close to the values given by "Rule 07" and detectivities of non-immersed detectors are close to the value marked for HgCdTe photodiodes. Experimental data of long-wavelength infrared detector structures were confirmed by numerical simulations obtained by a commercially available software APSYS platform. A detailed analysis applied to explain dark current plots was made, taking into account Shockley-Read-Hall, Auger, and tunneling currents.

  6. Characteristic of HgCdTe photoconductive detector in energy distribution measurement system of laser spot in far field

    NASA Astrophysics Data System (ADS)

    Zhang, Jianmin; Feng, Guobin; Zhao, Jun

    2008-02-01

    Detector is an important device for the far-field laser spot measuring apparatus in form of photoelectrical detector array, for it acts as an optical-to-electrical converter in measure. Two working parameters of n-type HgCdTe photoconductor are discussed in this paper. The fundamental electrical properties of n-type Hg 1-xCd xTe material are summarized and related to device performance parameters. It can be found that the dark resistance R d and the voltage responsivity R v are closely bound up with temperature T and the alloy composition x, and the normalized calculating R d-T and R v-T characteristic curves are in good agreement with experimental results at temperature below 20°C. And then the dynamic responses of a detector under laser irradiation are studied by utilizing 2-D transient heat transfer model and empirical formulas. Furthermore, experimental investigation on laser damage in PC-type HgCdTe devices is operated by a means named 1on1. Detectable change in performance parameters has not been found under the irradiation of in-band laser, at power density beyond the detector linear response zone, and time of 200s. When the power of irradiation strengthened, the dark resistance increased, and the responsivity reduced. By observing the surface morphology of HgCdTe wafers, calculating the compositions x from R d-T characteristic, the causes for performance changing has been analyzed.

  7. First-principles study of structure and nonlinear optical properties of CdHg(SCN)4 crystal

    NASA Astrophysics Data System (ADS)

    Zhang, Peng; Kong, Chui-Gang; Zheng, Chao; Wang, Xin-Qiang; Ma, Yue; Feng, Jin-Bo; Jiao, Yu-Qiu; Lu, Gui-Wu

    2015-02-01

    The geometric structure, electronic structure, and optical properties of CdHg(SCN)4 crystal are calculated by using the density functional perturbation theory and Green function screening Coulomb interaction approximation. The band gap of CdHg(SCN)4 crystal is calculated to be 3.198 eV, which is in good agreement with the experimental value 3.265 eV. The calculated second-order nonlinear optical coefficients are d14 = 1.2906 pm/V and d15 = 5.0928 pm/V, which are in agreement with the experimental results (d14 = (1.4 ± 0.6)pm/V and d15 = (6.0 ± 0.9 pm/V). Moreover, it is found that the contribution to the valence band mainly comes from Cd-4d, Hg-5d states, and the contributions to the valence band top and the conduction band bottom predominantly come from C-2p, N-2p, and S-3p states. The second-order nonlinear optical effect of CdHg(SCN)4 crystal results mainly from the internal electronic transition of (SCN)-. Project supported by the National Natural Science Foundation of China (Grant No. 51372140), the Youth Scientist Fund of Shandong Province, China (Grant No. BS2011CL025), and the Basic Discipline Research Fund of China University of Petroleum, Beijing, China (Grant No. 01JB0169).

  8. Status of HgCdTe Barrier Infrared Detectors Grown by MOCVD in Military University of Technology

    NASA Astrophysics Data System (ADS)

    Kopytko, M.; Jóźwikowski, K.; Martyniuk, P.; Gawron, W.; Madejczyk, P.; Kowalewski, A.; Markowska, O.; Rogalski, A.; Rutkowski, J.

    2016-09-01

    In this paper we present the status of HgCdTe barrier detectors with an emphasis on technological progress in metalorganic chemical vapor deposition (MOCVD) growth achieved recently at the Institute of Applied Physics, Military University of Technology. It is shown that MOCVD technology is an excellent tool for HgCdTe barrier architecture growth with a wide range of composition, donor /acceptor doping, and without post-grown annealing. The device concept of a specific barrier bandgap architecture integrated with Auger-suppression is as a good solution for high-operating temperature infrared detectors. Analyzed devices show a high performance comparable with the state-of-the-art of HgCdTe photodiodes. Dark current densities are close to the values given by "Rule 07" and detectivities of non-immersed detectors are close to the value marked for HgCdTe photodiodes. Experimental data of long-wavelength infrared detector structures were confirmed by numerical simulations obtained by a commercially available software APSYS platform. A detailed analysis applied to explain dark current plots was made, taking into account Shockley-Read-Hall, Auger, and tunneling currents.

  9. Structural and optical properties of Cd 0.7Hg 0.3Te-CdTe heterostructures grown by molecular beam epitaxy

    NASA Astrophysics Data System (ADS)

    Lentz, G.; Magnea, N.; Mariette, H.; Tuffigo, H.; Feuillet, G.; Fontenille, J.; Ligeon, E.; Saminadayar, K.

    1990-04-01

    Layers and single quantum wells of Cd xHg 1- xTe with x ⋍ 0.7 have been grown by molecular beam epitaxy. Structural analysis shows that growth free of defects (twins, dislocations) can be achieved on (111)Te Cd 0.96Zn 0.04Te substrates. The Photoluminescence analysis of the layers and the wells reveal that they are efficient light emittors in the 1.3-1.5 μm range.

  10. The growth of various buffer layer structures and their influence on the quality of (CdHg)Te epilayers

    NASA Astrophysics Data System (ADS)

    Gouws, G. J.; Muller, R. J.; Bowden, R. S.

    1993-05-01

    The suitability of various buffer layer structures on (100) GaAs for (CdHg)Te growth by organometallic vapour phase epitaxy (OMVPE) was investigated. The preferred epitaxial orientation of {(100)GaAs}/{(111)CdTe} was found to be unsuitable due to the formation of electrically active defects in the material. An intermediate ZnTe layer was used to select the (100) orientation and (100) CdTe layers were when deposited on this ZnTe layer. The quality of the resultant CdTe buffer was found to critically depend on the thickness of this intermediate ZnTe buffer, with a ZnTe thickness of approximately 500 Å producing the best CdTe buffer. (CdHg)Te epilayers grown on these {ZnTe}/{CdTe} buffers had improved electrical properties, but still suffered from a poor surface morphology. This surface morphology could be improved by using a lattice matched Cd 0.96Zn 0.04Te alloy as the final buffer layer, but the surface pyramids typical of the (100) orientation could never be completely eliminated.

  11. Morphology and chemical composition analysis on multi-pulsed CO2 laser ablation of HgCdTe crystals

    NASA Astrophysics Data System (ADS)

    Tang, Wei; Guo, Jin; Shao, Jun-feng; Wang, Ting-feng

    2013-09-01

    In order to study deeply damage mechanism of HgCdTe crystal irradiated by multi-pulsed CO2 laser and obtain the characteristics of surface morphological and chemical composition changes. Firstly, Irradiation effect experiment is conducted on the Hg0.826Cd0.174Te crystal by pulsed CO2 laser, which has a pulse width of 200ns and repetition frequency ranges from 1 Hz to 100 kHz. Then morphological and chemical composition changes of Hg0.826Cd0.174Te crystal is measured by field emission scanning electron microscope (FESEM) and damage threshold is obtained by morphology method. Finally, the impact of laser power density on morphological and chemical composition changes is analyzed. The research results show that: damage threshold of Hg0.826Cd0.174Te crystal which is irradiated by multi-pulsed CO2 laser is 950 W/cm2. The crystal surface melting phenomenon is very obvious, the obvious crack which is caused by thermal stress is not found in the surface, and a large number of bulges and pits are taken shape in the laser ablation zone. Chemical composition changes of the crystal are obvious, and a lot of O element is found in the laser ablation zone. With the increase of laser irradiation power, the content of Hg element decrease rapidly, the content of Cd, Te and O element raise by degrees, and chemical composition changes of the crystal are more and more obvious. When the irradiation power density is 1.8kW/cm2, the surface becomes smooth in the ablation zone due to the impact of laser impulse force, and the content of the chemical compositions is that Hg accounts for 0.23%, Cd accounts for 21.38%, Te accounts for 26.27%, and O accounts for 52.12%. The conclusions of the study have a reference value for the Hg0.826Cd0.174Tecrystal in the application of making infrared detector and pulsed CO2 laser in the aspect of laser processing.

  12. Assessment of HgCdTe and GaAs/GaAlAs technologies for LWIR infrared imagers

    NASA Astrophysics Data System (ADS)

    Dewames, Roger E.; Arias, Jose M.; Kozlowski, Lester J.; Williams, G. M.

    1992-12-01

    Imagery of long wavelength infrared HgCdTe and GaAs quantum well staring arrays in size 128 X 128 has been demonstrated. In this paper, we compare detector array performance characteristics, discuss the natural and technological limitations of both technologies and identify the improvements likely to be made in the near future. At this stage of feasibility demonstration in the spectral band 8 - 10 micrometers , the effective quantum efficiency in GaAs FPAs is 4% compared to 60% for HgCdTe and the responsivity is 0.08 A/W compared to 4.5 A/W. This value of 0.08 A/W is significantly below the value 2 A/W reported for single quantum well infrared photodetectors (QWIP) detectors. The peak detectivities and NE(Delta) T at 78 K are (5 X 10(superscript 9) cm (root)Hz/W, 0.037 K) and (2 X 10(superscript 11), 0.005 K) for QWIP and HgCdTe, respectively. The residual nonuniformities after two-point correction are < 0.01% for QWIP arrays and 0.012% for HgCdTe. Crosstalk is currently unsatisfactory in QWIP detector arrays, but design concepts can be used to reduce this effect. For terrestrial imaging, GaAs quantum well detector arrays most likely will need to operate at temperatures below 80 K from fundamental considerations; HgCdTe detector arrays are background limited at operating temperatures HgCdTe detector arrays with good yield, it is unlikely that HgCdTe will be displaced by this technology for terrestrial applications. For low background space applications at (phi) (subscript b)

  13. Temperature-sensitive junction transformations for mid-wavelength HgCdTe photovoltaic infrared detector arrays by laser beam induced current microscope

    SciTech Connect

    Qiu, Weicheng; Hu, Weida Lin, Tie; Yin, Fei; Zhang, Bo; Chen, Xiaoshuang; Lu, Wei; Cheng, Xiang'ai Wang, Rui

    2014-11-10

    In this paper, we report on the disappearance of the photosensitive area extension effect and the unusual temperature dependence of junction transformation for mid-wavelength, n-on-p HgCdTe photovoltaic infrared detector arrays. The n-type region is formed by B{sup +} ion implantation on Hg-vacancy-doped p-type HgCdTe. Junction transformations under different temperatures are visually captured by a laser beam induced current microscope. A physical model of temperature dependence on junction transformation is proposed and demonstrated by using numerical simulations. It is shown that Hg-interstitial diffusion and temperature activated defects jointly lead to the p-n junction transformation dependence on temperature, and the weaker mixed conduction compared with long-wavelength HgCdTe photodiode contributes to the disappearance of the photosensitive area extension effect in mid-wavelength HgCdTe infrared detector arrays.

  14. Structural characterization of Hg 0.78Cd 0.22Te/CdTe LPE heterostructures grown from Te solutions

    NASA Astrophysics Data System (ADS)

    Bernardi, S.; Bocchi, C.; Ferrari, C.; Franzosi, P.; Lazzarini, L.

    1991-08-01

    Hg 0.78Cd 0.22Te epilayers have been grown on CdTe substrates by slider liquid phase epitaxy. The crystal quality of the epitaxial material has been studied in as-grown structures and chemically or mechano-chemically prepared bevels using X-ray topography, double crystal diffractometry and transmission electron microscopy. It has been found that the bulk epilayers exhibit a very high crystal quality, as evidenced by the relatively low density of dislocations and the very narrow Bragg peaks. In contrast, a high dislocation and precipitate density and a broadening of the Bragg peak have been detected in the epilayer near the interface. Finally, a Hg decrease in the layer and a corresponding Hg increase in the substrate close to the interface have been observed.

  15. Theoretical study of heavy metal Cd, Cu, Hg, and Ni(II) adsorption on the kaolinite(0 0 1) surface

    NASA Astrophysics Data System (ADS)

    Zhao, Jian; He, Man-Chao

    2014-10-01

    Heavy metal pollution is currently of great concern because it has been recognized as a potential threat to air, water, and soil. Adsorption was one of the most popular methods for the removal of heavy metal. The adsorption of heavy metal Cd, Cu, Hg, and Ni(II) atoms on the hydroxylated (0 0 1) surface of kaolinite was investigated using density-functional theory within the generalized gradient approximation and a supercell approach. The coverage dependence of the adsorption structures and energetics were systematically studied for a wide range of coverage Θ [from 0.11 to 1.0 monolayers (ML)] and adsorption sites. The most stable among all possible adsorption sites for Cd(II) atom was the two-fold bridge site followed by the one-fold top site, and the top site was the most favorite adsorption site for Cu and Ni(II) atoms, while the three-fold hollow site was the most stable adsorption site for Hg(II) atom followed by the two-fold bridge site. The adsorption energy increases with the coverage for Cd, Cu, and Hg(II) atoms, thus indicating the higher stability of surface adsorption and a tendency to the formation of adsorbate islands (clusters) with increasing the coverage. However, the adsorption energy of Ni(II) atoms decreases when increasing the coverage. The adsorption capabilities of the kaolinite clay for the heavy metal atoms were in the order of Ni > Cu > Cd > Hg(II). The other properties of the Cd, Cu, Hg, and Ni(II)/kaolinite(0 0 1) system including the different charge distribution, the lattice relaxation, and the electronic density of states were also studied and discussed in detail.

  16. p on n ion-implanted junctions in liquid phase epitaxy HgCdTe layers on CdTe substrates

    NASA Astrophysics Data System (ADS)

    Bubulac, L. O.; Lo, D. S.; Tennant, W. E.; Edwall, D. D.; Chen, J. C.

    1987-06-01

    The first demonstrated achievement of p-on-n activated junctions in HgCdTe material by As ion implantation is reported. The junctions were formed by treating the implant as a finite diffusion source in the postimplant anneals. The materials employed for this study were n-type In-impurity-doped LPE HgCdTe grown on CdTe. As was selected as the candidate acceptor impurity since it activated during postimplanted anneals in Hg vapor. The As concentration profile determined by secondary-ion mass spectroscopy showed that during postimplant anneal a complex diffusion mechanism redistributes the As. In the junction region the implant activation efficiency is about 50 percent. Junction depth can be controlled by varying As diffusion and background carrier concentration. Junction depths determined by the electron-beam-induced-current technique were consistent with the differential Hall electrical profiles. A p-on-n junction is shown with excellent rectification characteristics and high breakdown voltage (sharp at 2.5 V and 77 C). This was obtained from Hg(1-x)Cd(x)Te with x = 0.23.

  17. Passivation Effect of Atomic Layer Deposition of Al2O3 Film on HgCdTe Infrared Detectors

    NASA Astrophysics Data System (ADS)

    Zhang, Peng; Ye, Zhen-Hua; Sun, Chang-Hong; Chen, Yi-Yu; Zhang, Tian-Ning; Chen, Xin; Lin, Chun; Ding, Ring-Jun; He, Li

    2016-09-01

    The passivation effect of atomic layer deposition of (ALD) Al2O3 film on a HgCdTe infrared detector was investigated in this work. The passivation effect of Al2O3 film was evaluated by measuring the minority carrier lifetime, capacitance versus voltage ( C- V) characteristics of metal-insulator-semiconductor devices, and resistance versus voltage ( R- V) characteristics of variable-area photodiodes. The minority carrier lifetime, C- V characteristics, and R- V characteristics of HgCdTe devices passivated by ALD Al2O3 film was comparable to those of HgCdTe devices passivated by e-beam evaporation of ZnS/CdTe film. However, the baking stability of devices passivated by Al2O3 film is inferior to that of devices passivated by ZnS/CdTe film. In future work, by optimizing the ALD Al2O3 film growing process and annealing conditions, it may be feasible to achieve both excellent electrical properties and good baking stability.

  18. Passivation Effect of Atomic Layer Deposition of Al2O3 Film on HgCdTe Infrared Detectors

    NASA Astrophysics Data System (ADS)

    Zhang, Peng; Ye, Zhen-Hua; Sun, Chang-Hong; Chen, Yi-Yu; Zhang, Tian-Ning; Chen, Xin; Lin, Chun; Ding, Ring-Jun; He, Li

    2016-06-01

    The passivation effect of atomic layer deposition of (ALD) Al2O3 film on a HgCdTe infrared detector was investigated in this work. The passivation effect of Al2O3 film was evaluated by measuring the minority carrier lifetime, capacitance versus voltage (C-V) characteristics of metal-insulator-semiconductor devices, and resistance versus voltage (R-V) characteristics of variable-area photodiodes. The minority carrier lifetime, C-V characteristics, and R-V characteristics of HgCdTe devices passivated by ALD Al2O3 film was comparable to those of HgCdTe devices passivated by e-beam evaporation of ZnS/CdTe film. However, the baking stability of devices passivated by Al2O3 film is inferior to that of devices passivated by ZnS/CdTe film. In future work, by optimizing the ALD Al2O3 film growing process and annealing conditions, it may be feasible to achieve both excellent electrical properties and good baking stability.

  19. High-Operating Temperature HgCdTe: A Vision for the Near Future

    NASA Astrophysics Data System (ADS)

    Lee, D.; Carmody, M.; Piquette, E.; Dreiske, P.; Chen, A.; Yulius, A.; Edwall, D.; Bhargava, S.; Zandian, M.; Tennant, W. E.

    2016-05-01

    We review recent advances in the HgCdTe material quality and detector performance achieved at Teledyne using molecular beam epitaxy growth and the double-layer planar hetero-junction (DLPH) detector architecture. By using an un-doped, fully depleted absorber, Teledyne's DLPH architecture can be extended for use in high operating temperatures and other applications. We assess the potential achievable performance for long wavelength infrared (LWIR) hetero-junction p-lightly-doped n or p-intrinsic-n (p-i-n) detectors based on recently reported results for 10.7 μm cutoff 1 K × 1 K focal plane arrays (FPAs) tested at temperatures down to 30 K. Variable temperature dark current measurements show that any Shockley-Read-Hall currents in the depletion region of these devices have lifetimes that are reproducibly greater than 100 ms. Under the assumption of comparable lifetimes at higher temperatures, it is predicted that fully-depleted background radiation-limited performance can be expected for 10-μm cutoff detectors from room temperature to well below liquid nitrogen temperatures, with room-temperature dark current nearly 400 times lower than predicted by Rule 07. The hetero-junction p-i-n diode is shown to have numerous other significant potential advantages including minimal or no passivation requirements for pBn-like processing, low 1/f noise, compatibility with small pixel pitch while maintaining high modulation transfer function, low crosstalk and good quantum efficiency. By appropriate design of the FPA dewar shielding, analysis shows that dark current can theoretically be further reduced below the thermal equilibrium radiative limit. Modeling shows that background radiation-limited LWIR HgCdTe operating with f/1 optics has the potential to operate within √2 of background-limited performance at 215 K. By reducing the background radiation by 2/3 using novel shielding methods, operation with a single-stage thermo-electric-cooler may be possible. If the background

  20. High-Operating Temperature HgCdTe: A Vision for the Near Future

    NASA Astrophysics Data System (ADS)

    Lee, D.; Carmody, M.; Piquette, E.; Dreiske, P.; Chen, A.; Yulius, A.; Edwall, D.; Bhargava, S.; Zandian, M.; Tennant, W. E.

    2016-09-01

    We review recent advances in the HgCdTe material quality and detector performance achieved at Teledyne using molecular beam epitaxy growth and the double-layer planar hetero-junction (DLPH) detector architecture. By using an un-doped, fully depleted absorber, Teledyne's DLPH architecture can be extended for use in high operating temperatures and other applications. We assess the potential achievable performance for long wavelength infrared (LWIR) hetero-junction p-lightly-doped n or p-intrinsic- n (p-i-n) detectors based on recently reported results for 10.7 μm cutoff 1 K × 1 K focal plane arrays (FPAs) tested at temperatures down to 30 K. Variable temperature dark current measurements show that any Shockley-Read-Hall currents in the depletion region of these devices have lifetimes that are reproducibly greater than 100 ms. Under the assumption of comparable lifetimes at higher temperatures, it is predicted that fully-depleted background radiation-limited performance can be expected for 10- μm cutoff detectors from room temperature to well below liquid nitrogen temperatures, with room-temperature dark current nearly 400 times lower than predicted by Rule 07. The hetero-junction p-i-n diode is shown to have numerous other significant potential advantages including minimal or no passivation requirements for pBn-like processing, low 1/ f noise, compatibility with small pixel pitch while maintaining high modulation transfer function, low crosstalk and good quantum efficiency. By appropriate design of the FPA dewar shielding, analysis shows that dark current can theoretically be further reduced below the thermal equilibrium radiative limit. Modeling shows that background radiation-limited LWIR HgCdTe operating with f/1 optics has the potential to operate within √2 of background-limited performance at 215 K. By reducing the background radiation by 2/3 using novel shielding methods, operation with a single-stage thermo-electric-cooler may be possible. If the

  1. First-principles study of HgTe/CdTe heterostructures under perturbations preserving time-reversal symmetry

    NASA Astrophysics Data System (ADS)

    Anversa, Jonas; Piquini, Paulo; Fazzio, Adalberto; Schmidt, Tome M.

    2014-11-01

    The observation of the quantum spin Hall effect without the need of an external magnetic field in HgTe/CdTe heterostructures triggered the study of materials exhibiting persistent spin-polarized electronic currents at their interfaces. These Dirac-like spin states are predicted to be topologically protected against perturbations preserving time-reversal symmetry. However, nonmagnetic (time-reversal preserving) perturbations will certainly affect these interface states. In this work, the density functional theory is used to characterize the topologically protected states of the (001) HgTe/CdTe heterostructure as well as to understand the influence of external adiabatic parameters as pressure and electric fields on these states. The intrasite Hubbard U term is seen to be important to correctly describe the HgTe bulk band structure. It is shown that, differently from the three-dimensional topological insulators, the HgTe/CdTe interface states present fully in-plane Rashba-like spin texture. Further, biaxial external pressures and electric fields perpendicular to the interfaces are seen to change the energetics and dispersion of the protected states, modifying the energy ordering of the crossing of the polarized interface states inside the band structure, and altering their Fermi velocities while not changing the topological quantum phase. These adiabatic variables can then be used to tune the topologically protected states with respect to the Fermi level.

  2. "Turn on" and label-free core-shell Ag@SiO2 nanoparticles-based metal-enhanced fluorescent (MEF) aptasensor for Hg2+

    NASA Astrophysics Data System (ADS)

    Pang, Yuanfeng; Rong, Zhen; Xiao, Rui; Wang, Shengqi

    2015-03-01

    A turn on and label-free fluorescent apasensor for Hg2+ with high sensitivity and selectivity has been demonstrated in this report. Firstly, core-shell Ag@SiO2 nanoparticles (NPs) were synthetized as a Metal-Enhanced Fluorescent (MEF) substrate, T-rich DNA aptamers were immobilized on the surface of Ag@SiO2 NPs and thiazole orange (TO) was selected as fluorescent reporter. After Hg2+ was added to the aptamer-Ag@SiO2 NPs and TO mixture buffer solution, the aptamer strand can bind Hg2+ to form T-Hg2+-T complex with a hairpin structure which TO can insert into. When clamped by the nucleic acid bases, the fluorescence quanta yield of TO will be increased under laser excitation and emitted a fluorescence emission. Furthermore, the fluorescence emission can be amplified largely by the MEF effect of the Ag@SiO2 NPs. The whole experiment can be finished within 30 min and the limit of detection is 0.33 nM even with interference by high concentrations of other metal ions. Finally, the sensor was applied for detecting Hg2+ in different real water samples with satisfying recoveries over 94%.

  3. "Turn on" and label-free core−shell Ag@SiO2 nanoparticles-based metal-enhanced fluorescent (MEF) aptasensor for Hg2+

    PubMed Central

    Pang, Yuanfeng; Rong, Zhen; Xiao, Rui; Wang, Shengqi

    2015-01-01

    A turn on and label-free fluorescent apasensor for Hg2+ with high sensitivity and selectivity has been demonstrated in this report. Firstly, core−shell Ag@SiO2 nanoparticles (NPs) were synthetized as a Metal-Enhanced Fluorescent (MEF) substrate, T-rich DNA aptamers were immobilized on the surface of Ag@SiO2 NPs and thiazole orange (TO) was selected as fluorescent reporter. After Hg2+ was added to the aptamer-Ag@SiO2 NPs and TO mixture buffer solution, the aptamer strand can bind Hg2+ to form T-Hg2+-T complex with a hairpin structure which TO can insert into. When clamped by the nucleic acid bases, the fluorescence quanta yield of TO will be increased under laser excitation and emitted a fluorescence emission. Furthermore, the fluorescence emission can be amplified largely by the MEF effect of the Ag@SiO2 NPs. The whole experiment can be finished within 30 min and the limit of detection is 0.33 nM even with interference by high concentrations of other metal ions. Finally, the sensor was applied for detecting Hg2+ in different real water samples with satisfying recoveries over 94%. PMID:25819733

  4. Distribution and relationships of As, Cd, Pb and Hg in freshwater fish from five French fishing areas.

    PubMed

    Noël, Laurent; Chekri, Rachida; Millour, Sandrine; Merlo, Mathilde; Leblanc, Jean-Charles; Guérin, Thierry

    2013-02-01

    The concentrations of arsenic, cadmium, mercury and lead in 149 muscle samples of eight freshwater fish species (European eel, bream, common carp, European catfish, roach, perch, pike and pikeperch) from five different French fishing areas from contaminated and control sites were measured by inductively coupled plasma mass spectrometry after microwave digestion under pressure. No significant correlation was found between the condition factor (CF), based on the length-mass relationship, and As, Cd and Pb levels in all the samples analysed, but a positive correlation was detected between CF and Hg levels (P<0.0001, R=0.49). Positive correlations with body length were only found for Hg in roach (P<0.05, R=0.32) and Pb in bream (P<0.05, R=0.48) and correlations with both body weight and length were also found for Hg in pike (P<0.05, R=0.90 and 0.86) and Cd in European eel (P<0.01, R=-0.35 and -0.37). The average content and the standard deviation in fish muscle samples was 0.007±0.012, 0.102±0.077, 0.142±0.097 and 0.035±0.053 mg kg(-1) of wet mass for Cd, As, Hg and Pb, respectively. Significant differences were established between groups of predatory fish and non-predatory fish for Hg and Pb, and between control and contaminated sites in the whole selection and also within feeding guilds, i.e. the values of Hg in the benthophagic fish were significantly different between these sites. Finally, these results were also compared for each species with previous French and European studies. PMID:23177713

  5. HgCdTe technology in Germany: the past, the present, and the future

    NASA Astrophysics Data System (ADS)

    Cabanski, W.; Ziegler, J.

    2009-05-01

    The first HgCdTe (MCT) activities at AEG-Telefunken in Germany were started in 1976. As part of the closing of AEG, the Heilbronn based IR-technology division was established as a spin-off company in 1995, under the brand name of AIM Infrarot-Module GmbH. A rapidly growing team of scientists focused on the detector-dewar-cooler technology and the development of linear photoconductive MCT arrays by applying the solid-state-recrystallization (SSR) technique for MCT growth, depositing and thinning MCT on sapphire substrates and oxide passivation. In 1979, after successful development of an own MCT-technology base, AEG-Telefunken entered into a license agreement with Texas Instruments for US Common Module (CM) technology in order to speed up the entry into full scale production with a transfer of MCT-material, dewar and cooler processes. CMs are still manufactured in small numbers. At the same time, a proprietary pc-MCT technology, independent of the CM production line, was developed and continuously matured and is today successfully applied in various custom designs like detectors for smart ammunition, for commercial and space applications. In 1982 started the development of 2nd Gen. photovoltaic MCT detectors, based on liquid-phase-epitaxy (LPE) in tilting and dipping technique and on planar array technology with Hg-Diffusion and ion implantation for pn-junction formation and CdTe/ZnS passivation. Linear MCT arrays in the 8-10,5 μm wavelength range with state of the art electro-optical performance have rapidly been demonstrated. Within the frame of the European anti-tank program TRIGAT, a two-way know-how-transfer between AEGTelefunken and SOFRADIR was established for linear LW MCT array processing, flip-chip-technology and dewar technology. Today, AIM's 2nd Gen. portfolio is based on MCT-LPE in dipping technique on CdZnTe substrates, characterized by a very low defect and dislocation density for 0,9 μm to 15μm wavelength application. Array processing is performed

  6. An Investigation into the Admittance of MIS-Structures Based on MBE HgCdTe with Quantum Wells

    NASA Astrophysics Data System (ADS)

    Dzyadukh, S. M.; Voitsekhovskii, A. V.; Nesmelov, S. N.; Dvoretskii, S. A.; N. Mikhailov, N.; Gorn, D. I.

    2013-12-01

    The results of investigations into the complex admittance of the MIS-structures based on heteroepitaxial MBE Hg1- x Cd x Te with quantum wells (QW) in the test-signal frequency range 1 kHz - 2 МHz at temperatures 8-300 K are reported. The thickness of single HgTe QWs was 5.6 and 7.1 nm, the content in the 35-nm thick barrier layers - 0.65 and 0.62, respectively.

  7. Terahertz magneto-optics in the ferromagnetic semiconductor HgCdCr2Se4

    NASA Astrophysics Data System (ADS)

    Huisman, T. J.; Mikhaylovskiy, R. V.; Telegin, A. V.; Sukhorukov, Yu. P.; Granovsky, A. B.; Naumov, S. V.; Rasing, Th.; Kimel, A. V.

    2015-03-01

    The magneto-optical response of the ferromagnetic semiconductor HgCdCr2Se4 at terahertz (THz) frequencies is studied using polarization sensitive THz time-domain spectroscopy. It is shown that the polarization state of broadband terahertz pulses, with a spectrum spanning from 0.2 THz to 2.2 THz, changes as an even function of the magnetization of the medium. Analysing the ellipticity and the rotation of the polarization of the THz radiation, we show that these effects originate from linear birefringence and dichroism, respectively, induced by the magnetic ordering. These effects are rather strong and reach 102 rad/m at an applied field of 1 kG which saturates the magnetization of the sample. Our observation serves as a proof-of-principle showing strong effects of the magnetic order on the response of a medium to electric fields at THz frequencies. These experiments also suggest the feasibility of spin-dependent transport measurements on a sub-picosecond timescale.

  8. 1024 x 1024 tactical IR HgCdTe staring sensor system

    NASA Astrophysics Data System (ADS)

    Barrios, Steven R.; Bogosyan, Arsen; Chan, Gilbert Y.; Gubala, Michael J.; Huey, Herbert; Kwok, Raymond S.; Lawrence, Raymond G.; Muzilla, Mark; Yang, John W.

    2000-12-01

    Boeing has demonstrated Mid-Wave Infrared (MWIR) imaging performance of a large format tactical sensor based on a 1024x1024 focal plane array (FPA). The ultra-high density infrared (IR) sensor system consists of a 10.47 mm aperture optics, a 10242 Mercury Cadmium Telluride (HgCdTe) FPA, a Sterling cycle integrated cooler dewar assembly (IDA), and a pre-processor with advanced algorithms for data correction and image enhancement. In this paper, we will present measured performance parameters of the staring sensor system including minimum resolvable temperature (MRT), noise equivalent temperature difference (NEDT), and noise equivalent irradiance (NEI). Key features and attributes of the integrated hardware will also be described. A similar instrument to enhance situational awareness is under evaluation as part of a panoramic camera system to demonstrate feasibility of sensor-guided landing in adverse environments for heavy transports such as the Boeing C17 aircraft. Considerations are underway to utilize the camera as part of the Joint Strike Fighter (JSF) sensor suite. We will introduce other system applications for which the large format imagery can be strategically employed and discuss its operational advantages.

  9. Two-color HgCdTe infrared staring focal plane arrays

    NASA Astrophysics Data System (ADS)

    Smith, Edward P.; Pham, Le T.; Venzor, Gregory M.; Norton, Elyse; Newton, Michael; Goetz, Paul; Randall, Valerie; Pierce, Gregory; Patten, Elizabeth A.; Coussa, Raymond A.; Kosai, Ken; Radford, William A.; Edwards, John; Johnson, Scott M.; Baur, Stefan T.; Roth, John A.; Nosho, Brett; Jensen, John E.; Longshore, Randolph E.

    2003-12-01

    Raytheon Vision Systems (RVS) in collaboration with HRL Laboratories is contributing to the maturation and manufacturing readiness of third-generation two-color HgCdTe infrared staring focal plane arrays (FPAs). This paper will highlight data from the routine growth and fabrication of 256x256 30μm unit-cell staring FPAs that provide dual-color detection in the mid-wavelength infrared (MWIR) and long-wavelength infrared (LWIR) spectral regions. FPAs configured for MWIR/MWIR, MWIR/LWIR and LWIR/LWIR detection are used for target identification, signature recognition and clutter rejection in a wide variety of space and ground-based applications. Optimized triple-layer-heterojunction (TLHJ) device designs and molecular beam epitaxy (MBE) growth using in-situ controls has contributed to individual bands in all two-color FPA configurations exhibiting high operability (>99%) and both performance and FPA functionality comparable to state-of-the-art single-color technology. The measured spectral cross talk from out-of-band radiation for either band is also typically less than 10%. An FPA architecture based on a single mesa, single indium bump, and sequential mode operation leverages current single-color processes in production while also providing compatibility with existing second-generation technologies.

  10. Temperature-dependent band structure of Hg1-xZnxTe-CdTe superlattices

    NASA Astrophysics Data System (ADS)

    Manassès, J.; Guldner, Y.; Vieren, J. P.; Voos, M.; Faurie, J. P.

    1991-12-01

    We present transport and far-infrared magneto-optical measurements in narrow-band-gap n-type Hg1-xZnxTe-CdTe superlattices. Hall and conductivity data obtained over a broad temperature range (1.5-300 K) show that these superlattices are semimetallic at low temperature and are degenerate intrinsic semiconductors for T>100 K, which constitutes an interesting situation in semiconductor-superlattice physics. The analysis of the data gives the Fermi energy as well as the temperature-dependent band gap, in good agreement with the calculated band structure, which predicts a semimetal-semiconductor transition induced by temperature in these heterostructures. We have measured the electron cyclotron resonances as a function of temperature with the magnetic field B applied parallel and perpendicular to the growth axis. The observed magneto-optical intraband transitions are in very satisfactory agreement with the calculated Landau levels and the Fermi energy. We show that the semimetal-semiconductor transition is characterized by an important reduction of the cyclotron mass measured with B perpendicular to the superlattice growth axis. The large variation of the conduction-band anisotropy calculated near the transition accounts for this effect.

  11. The potential for high performance HgCdTe arrays at 4 microns

    NASA Technical Reports Server (NTRS)

    Rieke, G. H.; Sarfaraz, M. A.; Rieke, Marcia J.; Young, Erick T.

    1989-01-01

    The potential of existing technology at Rockwell International in terms of the goals for astronomical detector arrays in the 3 to 5 micron interval is evaluated. Measurements have been obtained for a number of samples of HgCdTe diodes manufactured by Rockwell International. All the diodes reported on here had cutoff wavelengths at high temperatures of 4.6 to 4.7 microns. Although no confirming measurements were made, the cutoff wavelength is expected to move to 5 microns or beyond at the low temperatures of our tests. Diode sizes ranged from 20 to 150 microns. The test program yielded full diode curves and relative response at 3.4 microns for the sample diodes as a function of temperature. Dark currents are quoted below as the current passing through the diode with a back bias of 50 mV. The various diode types showed a wide range of behavior, both with regard to dark current and responsibility. The test results for one of the best diode types are illustrated. This detector has a size of 148 microns and a cutoff wavelength of 4.61 microns.

  12. Photocurrent Measurement of PC and PV HgCdTe Detectors

    PubMed Central

    Eppeldauer, George P.; Martin, Robert J.

    2001-01-01

    Novel preamplifiers for working standard photoconductive (PC) and photovoltaic (PV) HgCdTe detectors have been developed to maintain the spectral responsivity scale of the National Institute of Standards and Technology (NIST) in the wavelength range of 5 μm to 20 μm. The linear PC mode preamplifier does not need any compensating source to zero the effect of the detector bias current for the preamplifier output. The impedance multiplication concept with a positive feedback buffer amplifier was analyzed and utilized in a bootstrap PV transimpedance amplifier to measure photocurrent of a 200 Ω shunt resistance photodiode with a maximum signal gain of 108 V/A. In spite of the high performance lock-in used as a second-stage signal-amplifier, the signal-to-noise ratio had to be optimized for the output of the photocurrent preamplifiers. Noise and drift were equalized for the output of the PV mode preamplifier. The signal gain errors were calculated to determine the signal frequency range where photocurrent-to-voltage conversion can be performed with very low uncertainties. For the design of both PC and PV detector preamplifiers, the most important gain equations are described. Measurement results on signal ranges and noise performance are discussed.

  13. HgCdTe APD-based linear-mode photon counting components and ladar receivers

    NASA Astrophysics Data System (ADS)

    Jack, Michael; Wehner, Justin; Edwards, John; Chapman, George; Hall, Donald N. B.; Jacobson, Shane M.

    2011-05-01

    Linear mode photon counting (LMPC) provides significant advantages in comparison with Geiger Mode (GM) Photon Counting including absence of after-pulsing, nanosecond pulse to pulse temporal resolution and robust operation in the present of high density obscurants or variable reflectivity objects. For this reason Raytheon has developed and previously reported on unique linear mode photon counting components and modules based on combining advanced APDs and advanced high gain circuits. By using HgCdTe APDs we enable Poisson number preserving photon counting. A metric of photon counting technology is dark count rate and detection probability. In this paper we report on a performance breakthrough resulting from improvement in design, process and readout operation enabling >10x reduction in dark counts rate to ~10,000 cps and >104x reduction in surface dark current enabling long 10 ms integration times. Our analysis of key dark current contributors suggest that substantial further reduction in DCR to ~ 1/sec or less can be achieved by optimizing wavelength, operating voltage and temperature.

  14. New developments in HgCdTe APDs and LADAR receivers

    NASA Astrophysics Data System (ADS)

    McKeag, William; Veeder, Tricia; Wang, Jinxue; Jack, Michael; Roberts, Tom; Robinson, Tom; Neisz, James; Andressen, Cliff; Rinker, Robert; Cook, T. Dean; Amzajerdian, Farzin

    2011-06-01

    Raytheon is developing NIR sensor chip assemblies (SCAs) for scanning and staring 3D LADAR systems. High sensitivity is obtained by integrating high performance detectors with gain, i.e., APDs with very low noise Readout Integrated Circuits (ROICs). Unique aspects of these designs include: independent acquisition (non-gated) of pulse returns, multiple pulse returns with both time and intensity reported to enable full 3D reconstruction of the image. Recent breakthrough in device design has resulted in HgCdTe APDs operating at 300K with essentially no excess noise to gains in excess of 100, low NEP <1nW and GHz bandwidths and have demonstrated linear mode photon counting. SCAs utilizing these high performance APDs have been integrated and demonstrated excellent spatial and range resolution enabling detailed 3D imagery both at short range and long ranges. In the following we will review progress in real-time 3D LADAR imaging receiver products in two areas: (1) scanning 256 × 4 configuration for the Multi-Mode Sensor Seeker (MMSS) program and (2) staring 256 × 256 configuration for the Autonomous Landing and Hazard Avoidance Technology (ALHAT) lunar landing mission.

  15. Nernst and Seebeck effects in HgTe/CdTe topological insulator

    NASA Astrophysics Data System (ADS)

    Zhang, Yuan; Song, Juntao; Li, Yu-Xian

    2015-03-01

    The Seebeck and Nernst effects in HgTe/CdTe quantum wells are studied using the tight-binding Hamiltonian and the nonequilibrium Green's function method. The Seebeck coefficient, Sc, and the Nernst coefficient, Nc, oscillate as a function of EF, where EF is the Fermi energy. The Seebeck coefficient shows peaks when the Fermi energy crosses the discrete transverse channels, and the height of the nth peak of the Sc is [ln2 /(1/2 +|n |)] for EF > 0. For the case EF < 0, the values of the peaks are negative, but the absolute values of the first five peaks are the same as those for EF > 0. The 6th peak of Sc reaches the value [ln2 /1.35 ] due to a higher density of states. When a magnetic field is applied, the Nernst coefficient appears. However, the values of the peaks for Nc are all positive. For a weak magnetic field, the temperature suppresses the oscillation of the Seebeck and Nernst coefficients but increases their magnitude. For a large magnetic field, because of the highly degenerate Landau levels, the peaks of the Seebeck coefficient at position EF=-12 , 10 , 28 meV , and Nernst coefficient at EF=-7 , 10 meV are robust against the temperature.

  16. Probing topological transitions in HgTe/CdTe quantum wells by magneto-optical measurements

    NASA Astrophysics Data System (ADS)

    Scharf, Benedikt; Matos-Abiague, Alex; Fabian, Jaroslav; Zutic, Igor

    2015-03-01

    In two-dimensional topological insulators, helical Quantum Spin Hall (QSH) states persist even at finite magnetic fields below a critical magnetic field Bc, above which only Quantum Hall (QH) states can be found. Using linear response theory, we theoretically investigate the magneto-optical properties of inverted HgTe/CdTe quantum wells, both for infinite two-dimensional and finite-strip geometries, and possible signatures of the transition between the QSH and QH regimes. In the absorption spectrum, several peaks arise due to non-equidistant Landau levels in both regimes. However, in the QSH regime, we find an additional absorption peak at low energies in the finite-strip geometry. This peak arises due to the presence of edge states in this geometry and persists for any Fermi level in the QSH regime, while in the QH regime the peak vanishes if the Fermi level is situated in the bulk gap. Thus, by sweeping the gate voltage, it is potentially possible to distinguish between the QSH and QH regimes. Moreover, we investigate the effect of spin-orbit coupling and finite temperature on this measurement scheme. This work is supported by U.S. ONR N000141310754, DFG Grants No. SCHA 1899/1-1 and SFB 689, as well as DOE-BES DE-SC0004890.

  17. Short wavelength HgCdTe staring focal plane for low background astronomy applications

    NASA Technical Reports Server (NTRS)

    Hall, D.; Stobie, J.; Hartle, N.; Lacroix, D.; Maschhoff, K.

    1989-01-01

    The design of a 128x128 staring short wave infrared (SWIR) HgCdTe focal plane incorporating charge integrating transimpedance input preamplifiers is presented. The preamplifiers improve device linearity and uniformity, and provide signal gain ahead of the miltiplexer and readout circuitry. Detector's with cutoff wavelength of 2.5 microns and operated at 80 K have demonstrated impedances in excess of 10(exp 16) ohms with 60 percent quantum efficiency. Focal plane performance using a smaller format device is presented which demonstrates the potential of this approach. Although the design is capable of achieving less than 30 rms electrons with todays technology, initial small format devices demonstrated a read noise of 100 rms electrons and were limited by the atypical high noise performance of the silicon process run. Luminescence from the active silicon circuitry in the multiplexer limits the minimum detector current to a few hundred electrons per second. Approaches to eliminate this excessive source of current is presented which should allow the focal plane to achieve detector background limited performance.

  18. Shubnikov-de Haas oscillations and quantum hall effect in modulation-doped HgTe-CdTe superlattices

    NASA Astrophysics Data System (ADS)

    Hoffman, C. A.; Meyer, J. R.; Arnold, D. J.; Bartoli, F. J.; Lansari, Y.; Cook, J. W.; Schetzina, J. F.

    1991-10-01

    We have investigated quantum oscillations in the magneto-transport properties of HgTe-CdTe superlattices grown by molecular-beam epitaxy. Modulation doping was achieved by incorporating either indium donors or arsenic acceptors into the CdTe barriers. In a p-type sample, quantized plateaus were observed in the Hall conductivity down to i=3 conduction channels. Since the structure contained 200 periods, this implies that the quantized holes populated only a small fraction of the total superlattice volume. A mixed conduction analysis of the nonoscillating component of magneto-transport data provided confirming evidence for the presence of a two-dimensional holes gas with the appropriate density in addition to the supperlattice holes. Previous reports of the quantum Hall effect in HgTe-CdTe also yielded i far less than the total number of superlattice wells. In contrast, an n-type sample from the present study displayed a single quantum Hall plateau at i≊140, indicating that in this case most of the 200 superlattice periods contributed to the conduction. We argue that this represents the first observation of the qunatum Hall effect associated with carriers distributed through the interior of a HgTe-CdTe superlattice.

  19. 256 x 256 PACE-1 PV HgCdTe focal plane arrays for medium and short wavelength infrared applications

    NASA Technical Reports Server (NTRS)

    Kozlowski, L. J.; Vural, K.; Johnson, V. H.; Chen, J. K.; Bailey, R. B.

    1990-01-01

    The development of two 256 by 256 hybrid HgCdTe focal plane array (FPA) families is described, and their performance is discussed. The hybrid FPAs employ a PV HgCdTe detector array and custom Si CMOS readouts. The PACE-1 process was used to fabricate the detectors, whereby the liquid phase epitaxial growth of HgCdTe occurs on sapphire substrates buffered by a layer of CdTe. The performance characteristics of the detector arrays are given. A tactical 256 by 256 CMOS readout is tested, in which a high functional yield was achieved. Updated test results are given for a 256 by 256 readout circuit developed for use in an orbital replacement instrument for the Hubble Space Telescope. The characterizations of several MWIR and SWIR FPAs were thorough and shown to be reliable. The pixel yield, maximum FPA responsivity nonuniformity, and SWIR FPA read noise for the tests are given. The high contrast and insignificant fixed pattern noise of the imagery from the MWIR 256 by 256 FPA are emphasized. These qualities were obtained when the device was operating at 80 k and utilizing f/2 optics with an 8-in. focal length and a 4.4 micron high pass filter.

  20. 256 X 256 PACE-1 PV HgCdTe focal plane arrays for medium and short wavelength infrared applications

    NASA Astrophysics Data System (ADS)

    Kozlowski, L. J.; Vural, K.; Johnson, V. H.; Chen, J. K.; Bailey, R. B.

    1990-09-01

    The development of two 256 by 256 hybrid HgCdTe focal plane array (FPA) families is described, and their performance is discussed. The hybrid FPAs employ a PV HgCdTe detector array and custom Si CMOS readouts. The PACE-1 process was used to fabricate the detectors, whereby the liquid phase epitaxial growth of HgCdTe occurs on sapphire substrates buffered by a layer of CdTe. The performance characteristics of the detector arrays are given. A tactical 256 by 256 CMOS readout is tested, in which a high functional yield was achieved. Updated test results are given for a 256 by 256 readout circuit developed for use in an orbital replacement instrument for the Hubble Space Telescope. The characterizations of several MWIR and SWIR FPAs were thorough and shown to be reliable. The pixel yield, maximum FPA responsivity nonuniformity, and SWIR FPA read noise for the tests are given. The high contrast and insignificant fixed pattern noise of the imagery from the MWIR 256 by 256 FPA are emphasized. These qualities were obtained when the device was operating at 80 k and utilizing f/2 optics with an 8-in. focal length and a 4.4 micron high pass filter.

  1. High-Performance M/LWIR Dual-Band HgCdTe/Si Focal-Plane Arrays

    NASA Astrophysics Data System (ADS)

    Vilela, M. F.; Olsson, K. R.; Norton, E. M.; Peterson, J. M.; Rybnicek, K.; Rhiger, D. R.; Fulk, C. W.; Bangs, J. W.; Lofgreen, D. D.; Johnson, S. M.

    2013-11-01

    Mercury cadmium telluride (HgCdTe) grown on large-area silicon (Si) substrates allows for larger array formats and potentially reduced focal-plane array (FPA) cost compared with smaller, more expensive cadmium zinc telluride (CdZnTe) substrates. In this work, the use of HgCdTe/Si for mid- wavelength/long-wavelength infrared (M/LWIR) dual-band FPAs is evaluated for tactical applications. A number of M/LWIR dual-band HgCdTe triple-layer n- P- n heterojunction device structures were grown by molecular-beam epitaxy (MBE) on 100-mm (211)Si substrates. Wafers exhibited low macrodefect densities (< 300 cm-2). Die from these wafers were mated to dual-band readout integrated circuits to produce FPAs. The measured 81-K cutoff wavelengths were 5.1 μm for band 1 (MWIR) and 9.6 μm for band 2 (LWIR). The FPAs exhibited high pixel operability in each band with noise-equivalent differential temperature operability of 99.98% for the MWIR band and 98.7% for the LWIR band at 81 K. The results from this series are compared with M/LWIR FPAs from 2009 to address possible methods for improvement. Results obtained in this work suggest that MBE growth defects and dislocations present in devices are not the limiting factor for detector operability, with regards to infrared detection for tactical applications.

  2. Receiver Performance of CO2 and CH4 Lidar with Low Noise HgCdTe Avalanche Photodiodes

    NASA Astrophysics Data System (ADS)

    Sun, X.; Abshire, J. B.

    2012-12-01

    NASA Goddard Space Flight Center (GSFC) is currently developing CO2 lidars at 1.57 μm wavelength for the Active Sensing of CO2 Emission over Days, Nights, and Seasons (ASCENDS) mission. One of the major technical challenges is the photodetectors that have to operate in short wave infrared (SWIR) wavelength region and sensitive to received laser pulses of only a few photons. We have been using InGaAs photocathode photomultiplier tubes (PMT) in our airborne simulator of the CO2 lidar that can detect single photon with up to 10% quantum efficiency at <1.6 μm wavelength. However it was difficult to maintain a sufficiently wide signal dynamic range and single photon sensitivity at the same time with the PMTs. There may also be a lifetime limitation with the InGaAs photocathode PMT for a multi-year space mission. We have been developing HgCdTe avalanche photodiode (APD) SWIR detector systems with DRS Technologies, Reconnaissance, Surveillance and Target Acquisition (RSTA) Division as an alternative photodetector for our CO2 lidars. The new HgCdTe APDs have typically a >50% quantum efficiency, including the effect of fill-factor, from 0.9 to 4.5 μm wavelength. DRS RSTA will integrate a low noise read-out integrated circuit (ROIC) with the HgCdTe APD array into a low noise analog SWIR detector with near single photon sensitivity. The new HgCdTe APD SWIR detector assembly is expected to improve the receiver sensitivity of our CO2 lidar by at least a factor of two and provide a sufficient wide signal dynamic range. The new SWIR detector systems can also be used in the CH4 lidars at 1.65 μm wavelength currently being developed at GSFC. The near infrared PMTs have diminishing quantum efficiency as the wavelength exceeds 1.6 μm. InGaAs APDs have a high quantum efficiency but too high an excess noise factor to achieve near quantum limited performance. The new HgCdTe APDs is expected to give a much superior performance than the PMTs and the InGaAs APDs. In this paper, we

  3. Nondestructive Characterization of Residual Threading Dislocation Density in HgCdTe Layers Grown on CdZnTe by Liquid-Phase Epitaxy

    NASA Astrophysics Data System (ADS)

    Fourreau, Y.; Pantzas, K.; Patriarche, G.; Destefanis, V.

    2016-05-01

    The performance of mercury cadmium telluride (MCT)-based infrared (IR) focal-plane arrays is closely related to the crystalline perfection of the HgCdTe thin film. In this work, Te-rich, (111)B-oriented HgCdTe epilayers grown by liquid-phase epitaxy on CdZnTe substrates have been studied. Surface atomic steps are shown on as-grown MCT materials using atomic force microscopy (AFM) and white-light interferometry (WLI), suggesting step-flow growth. Locally, quasiperfect surface spirals are also evidenced. A demonstration is given that these spirals are related to the emergence of almost pure screw threading dislocations. A nondestructive and quantitative technique to measure the threading dislocation density is proposed. The technique consists of counting the surface spirals on the as-grown MCT surface from images obtained by either AFM or WLI measurements. The benefits and drawbacks of both destructive—chemical etching of HgCdTe dislocations—and nondestructive surface imaging techniques are compared. The nature of defects is also discussed. Finally, state-of-the-art threading dislocation densities in the low 104 cm-2 range are evidenced by both etch pit density (EPD) and surface imaging measurements.

  4. Nondestructive Characterization of Residual Threading Dislocation Density in HgCdTe Layers Grown on CdZnTe by Liquid-Phase Epitaxy

    NASA Astrophysics Data System (ADS)

    Fourreau, Y.; Pantzas, K.; Patriarche, G.; Destefanis, V.

    2016-09-01

    The performance of mercury cadmium telluride (MCT)-based infrared (IR) focal-plane arrays is closely related to the crystalline perfection of the HgCdTe thin film. In this work, Te-rich, (111)B-oriented HgCdTe epilayers grown by liquid-phase epitaxy on CdZnTe substrates have been studied. Surface atomic steps are shown on as-grown MCT materials using atomic force microscopy (AFM) and white-light interferometry (WLI), suggesting step-flow growth. Locally, quasiperfect surface spirals are also evidenced. A demonstration is given that these spirals are related to the emergence of almost pure screw threading dislocations. A nondestructive and quantitative technique to measure the threading dislocation density is proposed. The technique consists of counting the surface spirals on the as-grown MCT surface from images obtained by either AFM or WLI measurements. The benefits and drawbacks of both destructive—chemical etching of HgCdTe dislocations—and nondestructive surface imaging techniques are compared. The nature of defects is also discussed. Finally, state-of-the-art threading dislocation densities in the low 104 cm-2 range are evidenced by both etch pit density (EPD) and surface imaging measurements.

  5. Tuning the electronic structure in nearly gapless HgCdTe with temperature: infrared magneto-spectroscopy study

    NASA Astrophysics Data System (ADS)

    Moon, Seongphill; Marcinkiewicz, M.; Consejo, C.; Ruffenach, S.; Knap, W.; Teppe, F.; Ludwig, J.; Thirunavukkuarasu, K.; Smirnov, D.; Krishtopenko, S.; Gavrilenko, V. I.; Dvoretskii, S. A.; Mikhailov, N. N.

    Replace this text with your abstract body. Recently, a temperature-induced transition from a conventional two-dimensional semiconductor to a topological insulator has been demonstrated through magneto transport studies on HgTe/CdHgTe quantum wells [Wiedmann, S. et al. Phys. Rev. B 91, 205311 (2015)]. Here we report on a temperature-driven semiconductor-to-semimetal transition in 3-dimensional CdxHg1-xTe (x =0.15) revealed by infrared magneto-spectroscopy. We show that changing the temperature from 4K to 120K enables continuous tuning of the band structure from inverted to normal alignment through a critical gapless state realized at ~80K, where the inter-Landau level transitions exhibit a characteristic sqrt(B) dependence intersecting at zero energy. Using an effective Dirac model, we determine the effective mass and the Fermi velocity for the studied temperature range.

  6. Self-regulated route to ternary hybrid nanocrystals of Ag-Ag2S-CdS with near-infrared photoluminescence and enhanced photothermal conversion

    NASA Astrophysics Data System (ADS)

    Zhu, Guoxing; Bao, Chunlin; Liu, Yuanjun; Shen, Xiaoping; Xi, Chunyan; Xu, Zheng; Ji, Zhenyuan

    2014-09-01

    Developing hybrid nanocrystals is a hot topic in materials science. Herein, a ternary hybrid nanocrystal, Ag-Ag2S-CdS, combining near infrared emission and photothermal conversion properties was demonstrated. The ternary Ag-Ag2S-CdS hybrid nanocrystals with cubic shape and uniform size were synthesized by a simple one-pot and one-step colloidal method. The growth process is self-regulated with the formation order of Ag2S, Ag, and CdS, sequentially. The formation of Ag originates from the partial reduction of Ag2S, while the formation of CdS is through an Ag2S catalytic mechanism based on its superionic feature. The obtained ternary hybrid nanocrystals show near infrared emission and photothermal conversion properties in a lab-on-a-particle system. Importantly, an enhanced effect is observed for the photothermal conversion, which is mainly due to the presence of heterointerfaces among the crystals. This work will not only advance the synthesis chemistry of multi-component hybrid nanocrystals but also provide a possible route for the design of advanced multi-model materials used in bio-related fields.Developing hybrid nanocrystals is a hot topic in materials science. Herein, a ternary hybrid nanocrystal, Ag-Ag2S-CdS, combining near infrared emission and photothermal conversion properties was demonstrated. The ternary Ag-Ag2S-CdS hybrid nanocrystals with cubic shape and uniform size were synthesized by a simple one-pot and one-step colloidal method. The growth process is self-regulated with the formation order of Ag2S, Ag, and CdS, sequentially. The formation of Ag originates from the partial reduction of Ag2S, while the formation of CdS is through an Ag2S catalytic mechanism based on its superionic feature. The obtained ternary hybrid nanocrystals show near infrared emission and photothermal conversion properties in a lab-on-a-particle system. Importantly, an enhanced effect is observed for the photothermal conversion, which is mainly due to the presence of

  7. Electrical and Optical Studies of Defect Structure of HgCdTe Films Grown by Molecular Beam Epitaxy

    NASA Astrophysics Data System (ADS)

    Świątek, Z.; Ozga, P.; Izhnin, I. I.; Fitsych, E. I.; Voitsekhovskii, A. V.; Korotaev, A. G.; Mynbaev, K. D.; Varavin, V. S.; Dvoretsky, S. A.; Mikhailov, N. N.; Yakushev, M. V.; Bonchyk, A. Yu.; Savytsky, H. V.

    2016-07-01

    Electrical and optical studies of defect structure of HgCdTe films grown by molecular beam epitaxy (MBE) are performed. It is shown that the peculiarity of these films is the presence of neutral defects formed at the growth stage and inherent to the material grown by MBE. It is assumed that these neutral defects are the Te nanocomplexes. Under ion milling, they are activated by mercury interstitials and form the donor centers with the concentration of 1017 cm-3, which makes it possible to detect such defects by measurements of electrical parameters of the material. Under doping of HgCdTe with arsenic using high temperature cracking, the As2 dimers are present in the arsenic flow and block the neutral Te nanocomplexes to form donor As2Te3 complexes. The results of electrical studies are compared with the results of studies carried out by micro-Raman spectroscopy.

  8. Chemical analysis of anodic oxide layers based on Hg/sub 1-x/Cd/sub x/Te

    SciTech Connect

    Korsak, T.E.

    1987-02-01

    The goal of this work is to study the application of the photometric method in analyzing the composition of Hg/sub 1-x/Cd/sub x/Te solid solution anodic oxide with high accuracy and without preliminary separation of the elements. In order to determine cadmium content, a photometric measurement on a complex of this element with xylenol orange was used. Mercury concentration was determined using an extraction photometric method based on benzene extraction of chloride complexes of mercury anions with crystal violet. Tellurium content was determined by extraction with dichloroethane of bromide complexes of tellurium with diantipyrylpropylmethane. The authors synthesized diantipyrylpropylmethane as described. They studied single crystal Hg/sub 1-x/Cd/sub x/Te samples of random orientation with x = 0.2 and n-type conductivity.

  9. The interfacial properties of AOF/ZnS and LWIR bulk HgCdTe materials by MIS structures

    NASA Astrophysics Data System (ADS)

    Wang, Nili; Liu, Shijia; Lan, Tianyi; Zhao, Shuiping; Jiang, Peilu; Li, Xiangyang

    2012-10-01

    The semiconductor-passivating layer interface, as well as the dielectric properties of the passivants, plays an important role in HgCdTe based photoelectric detectors. Anodization is a commonly uses surface passivation for HgCdTe. ZnS is deposited on the AOF (anodic-oxide film) as antireflecting layer. The interfacial properties of the metal insulator semiconductor (MIS) structures were determined by capacitance-voltage (C-V) measurements in the frequency range 10 KHz-10 MHz. The results showed that the MIS detector could not reach the high frequency level even at frequencies up to 10 MHz. The interfacial state densities were 3.4×1011 cm-2q-1V-1 and the fixed charges were 1.1×1012 cm-2. The surface recombination velocity was 700 cm/s.

  10. Determination of a natural valence-band offset - The case of HgTe and CdTe

    NASA Technical Reports Server (NTRS)

    Shih, C. K.; Spicer, W. E.

    1987-01-01

    A method to determine a natural valence-band offset (NVBO), i.e., the change in the valence-band maximum energy which is intrinsic to the bulk band structures of semiconductors is proposed. The HgTe-CdTe system is used as an example in which it is found that the valence-band maximum of HgTe lies 0.35 + or - 0.06 eV above that of CdTe. The NVBO of 0.35 eV is in good agreement with the X-ray photoemission spectroscopy measurement of the heterojunction offset. The procedure to determine the NVBO between semiconductors, and its implication on the heterojunction band lineup and the electronic structures of semiconductor alloys, are discussed.

  11. Heat capacity, enthalpy of mixing, and thermal conductivity of Hg(1-x)Cd(x)Te pseudobinary melts

    NASA Technical Reports Server (NTRS)

    Su, Ching-Hua

    1986-01-01

    Heat capacity and enthalpy of mixing of Hg(1-x)Cd(x)Te pseudobinary melts were calculated assuming an associated solution model for the liquid phase. The thermal conductivity of the pseudobinary melts for x = 0, 0.05, 0.1, and 0.2 was then calculated from the heat capacity values and the experimental values of thermal diffusivity and density for these melts. The thermal conductivity for the pseudobinary solid solution is also discussed.

  12. ACUTE TOXICITIES OF CD2+, CR+6, HG2+, NI2+, AND ZN2+ TO ESTUARINE MACROFAUNA

    EPA Science Inventory

    Static acute toxicity bioassays were conducted at 20 C and 20 o/oo salinity with CdCl2-2 and one half H2O, K2CrO4, HgCl2, NiCl2-6H2O, and ZnCl2 using adults of starfish, Asterias forbesi; sandworm, Nereis virens; hermit crab, Pagurus longicarpus; softshell clam, Mya arenaria; mud...

  13. The theoretical calculation of the phase diagram of infrared detector materials (Hg,Zn)Te and (Cd,Zn)Te

    NASA Astrophysics Data System (ADS)

    Li, Chi; Huang, Xingliang

    1989-05-01

    A technique for constructing the phase diagrams of Te-based pseudobinary IR detector materials on the basis of thermodynamics theory is described and demonstrated. The fundamental principles of the segregation-coefficient and shape-statement methods are reviewed; the computational procedure is explained; and results are presented for HgTe-ZnTe and CdTe-ZnTe. The temperatures in the diagrams are found to be within 0.6 and 15 C, respectively, of the experimentally measured values.

  14. HgCdTe e-APD detector arrays with single photon sensitivity for space lidar applications

    NASA Astrophysics Data System (ADS)

    Sun, Xiaoli; Abshire, James B.; Beck, Jeffrey D.

    2014-05-01

    A multi-element HgCdTe electron initiated avalanche photodiode (e-APD) array has been developed for space lidar. The detector array was fabricated with 4.3μm cutoff HgCdTe with a spectral response from 0.4 to 4.3 μm. We have demonstrated a 4x4 e-APD array with 80 μm square elements followed by a custom cryogenic CMOS read-out integrated circuit (ROIC). The device operates at 77K inside a small closed-cycle cooler-Dewar with the support electronics integrated in a field programmable gate array. Measurements showed a unity gain quantum efficiency of about 90% at 1.5-1.6 μm wavelength. The bulk dark current of the HgCdTe e-APD at 77K was less than 50,000 input referred electrons/s at 12 V APD bias where the APD gain was 620 and the measured noise equivalent power (NEP) was 0.4 fW/Hz1/2. The electrical bandwidth of the device was about 6 MHz, mostly limited by the ROIC, but sufficient for the lidar application. Although the devices were designed for low bandwidth pulse detections, the high gain and low dark current enabled them to be used for single photon detections. Because the APD was biased below the break-down voltage, the output is linear to the input signal and there were no nonlinear effect such as dead-time and afterpulsing, and no need for gated operation. A new series of HgCdTe e-APDs have also been developed with a much wider bandwidth ROIC and higher APD gain, which is expected to give a much better performance in single photon detections.

  15. Advanced methods for preparation and characterization of infrared detector materials. [crystallization and phase diagrams of Hg sub 1-x Cd sub x Te

    NASA Technical Reports Server (NTRS)

    Lehoczy, S. L.

    1979-01-01

    Crystal growth of Hg sub 1-x Cd sub x Te and density measurements of ingot slices are discussed. Radial compositional variations are evaluated from the results of infrared transmission edge mapping. The pseudo-binary HgTe-CdTe phase diagram is examined with reference to differential thermal analysis measurements. The phase equilibria calculations, based on the 'regular association solution' theory (R.A.S.) are explained and, using the obtained R.A.S. parameters, the activities of Hg, Cd, and Te vapors and their partial pressures over the pseudo-binary melt are calculated.

  16. Photoelectrical characteristics of MIS structures on the basis of graded-band-gap n-HgCdTe ( x = 0.21 0.23)

    NASA Astrophysics Data System (ADS)

    Voitsekhovskii, A. V.; Nesmelov, S. N.; Dzyadukh, S. M.; Varavin, V. S.; Dvoretskii, S. A.; Mikhailov, N. N.; Sidorov, Yu. G.; Vasil'Ev, V. V.; Zakhar'yash, T. I.; Mashukov, Yu. P.

    2006-10-01

    Voltage, frequency, and temperature dependences of photo-emf are experimentally studied in the MIS HgCdTe/SiO 2 / Si 3 N 4 and HgCdTe/AOF structures. The MIS structures were produced on the basis of graded-bandgap Hg 1-x Cd x Te films grown by molecular-beam epitaxy on GaAs substrates. It is found that the subsurface graded-band-gap layers do affect the photoelectrical characteristics of MIS structures. The mechanisms limiting the differential resistance in the space-charge region at various temperatures are revealed.

  17. Optical and magneto-optic properties of HgTe/CdTe superlattices in the inverted-band semiconducting regime

    NASA Astrophysics Data System (ADS)

    Yang, Z.; Yu, Z.; Lansari, Y.; Cook, J. W.; Schetzina, J. F.

    1991-10-01

    Low temperature infrared transmission and far-infrared magneto-optic transmission experiments were completed for a series of HgTe/CdTe superlattices (SLs). The SLs studied were grown with layer thickness intentionally chosen to make the samples inverted-band semimetals or inverted-band semiconductors, a new regime of the HgTe/CdTe SL which only recently has been predicted by theory. Cyclotron resonance of electrons in the first conduction subband H1 was observed in the far-infrared magneto-transmission experiments. From these measurements electron effective masses were calculated. The optical transition from the second heavy hole subband H2 to the second conduction subband E2 was observed in the infrared transmission experiments. The H2-E2 transition energy was observed to decrease with increasing SL well width Lz. In addition, the electron effective mass was found to increase as Lz increases. Both of these observations indicate that all of the SL samples are, indeed, inverted-band SLs. This in turn implies that the valence band offset between HgTe and CdTe must be large, ˜400 meV at 4.5 K.

  18. Density, Electrical Conductivity and Viscosity of Hg(sub 0.8)Cd(sub 0.2)Te Melt

    NASA Technical Reports Server (NTRS)

    Li, C.; Scripa, R. N.; Ban, H.; Lin, B.; Su, C.-H.; Lehoczky, S. L.

    2004-01-01

    The density, viscosity, and electrical conductivity of Hg(sub 0.8)Cd(sub 0.2)Te melt were measures as a function of temperature. A pycnometric method was used to measure the melt density in the temperature range of 1072 to 1122 K. The viscosity and electrical conductivity were determined using a transient torque method from 1068 to 1132 K. The density result from this study is within 0.3% of the published data. However, the current viscosity result is approximately 30% lower than the existing data. The electrical conductivity of Hg(sub 0.8)Cd(sub 0.2)Te melt as a function of temperature, which is not available in the literature, is also determined. The analysis of the temperature dependent electrical conductivity and the relationship between the kinematic viscosity and density indicated that the structure of the melt appeared to be homogeneous when the temperature was above 1090 K. A structural transition occurred in the Hg(sub 0.8)Cd(sub 0.2)Te melt as the temperature was decreased to below 1090 K.

  19. Comparison of NaI(Tl), CdTe, and HgI2 surgical probes: physical characterization.

    PubMed

    Barber, H B; Barrett, H H; Hickernell, T S; Kwo, D P; Woolfenden, J M; Entine, G; Ortale Baccash, C

    1991-01-01

    The physical properties of three surgical probes containing different radiation detectors are compared: a NaI(Tl) scintillator with a flexible, fiber-optic light guide, and two semiconductor detectors that operate at room temperature, CdTe and HgI2. Also compared are spectra, energy resolutions, and counting efficiencies measured at a variety of gamma-ray energies between 30 and 1000 keV. The energy resolution of the NaI probe is substantially poorer than that of either semiconductor probe due in part to light losses in coupling the scintillator to the fiber optics. The semiconductor probes have complex spectral response due to charge-carrier trapping and K x-ray escape, and not all photoelectric interactions in these detectors contribute to the useful part of the photopeak. Above 120 keV the counting efficiency for the NaI probe is an order of magnitude higher than for the CdTe and HgI2 probes. Both energy resolution and counting efficiency are slightly better for the HgI2 probe than for the CdTe probe. PMID:1870478

  20. HgCdTe Detectors for Space and Science Imaging: General Issues and Latest Achievements

    NASA Astrophysics Data System (ADS)

    Gravrand, O.; Rothman, J.; Cervera, C.; Baier, N.; Lobre, C.; Zanatta, J. P.; Boulade, O.; Moreau, V.; Fieque, B.

    2016-05-01

    HgCdTe (MCT) is a very versatile material system for infrared (IR) detection, suitable for high performance detection in a wide range of applications and spectral ranges. Indeed, the ability to tailor the cutoff frequency as close as possible to the needs makes it a perfect candidate for high performance detection. Moreover, the high quality material available today, grown either by molecular beam epitaxy or liquid phase epitaxy, allows for very low dark currents at low temperatures, suitable for low flux detection applications such as science imaging. MCT has also demonstrated robustness to the aggressive environment of space and faces, therefore, a large demand for space applications. A satellite may stare at the earth, in which case detection usually involves a lot of photons, called a high flux scenario. Alternatively, a satellite may stare at outer space for science purposes, in which case the detected photon number is very low, leading to low flux scenarios. This latter case induces very strong constraints onto the detector: low dark current, low noise, (very) large focal plane arrays. The classical structure used to fulfill those requirements are usually p/n MCT photodiodes. This type of structure has been deeply investigated in our laboratory for different spectral bands, in collaboration with the CEA Astrophysics lab. However, another alternative may also be investigated with low excess noise: MCT n/p avalanche photodiodes (APD). This paper reviews the latest achievements obtained on this matter at DEFIR (LETI and Sofradir common laboratory) from the short wave infrared (SWIR) band detection for classical astronomical needs, to long wave infrared (LWIR) band for exoplanet transit spectroscopy, up to very long wave infrared (VLWIR) bands. The different available diode architectures (n/p VHg or p/n, or even APDs) are reviewed, including different available ROIC architectures for low flux detection.

  1. HgCdTe Detectors for Space and Science Imaging: General Issues and Latest Achievements

    NASA Astrophysics Data System (ADS)

    Gravrand, O.; Rothman, J.; Cervera, C.; Baier, N.; Lobre, C.; Zanatta, J. P.; Boulade, O.; Moreau, V.; Fieque, B.

    2016-09-01

    HgCdTe (MCT) is a very versatile material system for infrared (IR) detection, suitable for high performance detection in a wide range of applications and spectral ranges. Indeed, the ability to tailor the cutoff frequency as close as possible to the needs makes it a perfect candidate for high performance detection. Moreover, the high quality material available today, grown either by molecular beam epitaxy or liquid phase epitaxy, allows for very low dark currents at low temperatures, suitable for low flux detection applications such as science imaging. MCT has also demonstrated robustness to the aggressive environment of space and faces, therefore, a large demand for space applications. A satellite may stare at the earth, in which case detection usually involves a lot of photons, called a high flux scenario. Alternatively, a satellite may stare at outer space for science purposes, in which case the detected photon number is very low, leading to low flux scenarios. This latter case induces very strong constraints onto the detector: low dark current, low noise, (very) large focal plane arrays. The classical structure used to fulfill those requirements are usually p/ n MCT photodiodes. This type of structure has been deeply investigated in our laboratory for different spectral bands, in collaboration with the CEA Astrophysics lab. However, another alternative may also be investigated with low excess noise: MCT n/ p avalanche photodiodes (APD). This paper reviews the latest achievements obtained on this matter at DEFIR (LETI and Sofradir common laboratory) from the short wave infrared (SWIR) band detection for classical astronomical needs, to long wave infrared (LWIR) band for exoplanet transit spectroscopy, up to very long wave infrared (VLWIR) bands. The different available diode architectures ( n/ p VHg or p/ n, or even APDs) are reviewed, including different available ROIC architectures for low flux detection.

  2. Nernst and Seebeck effects in HgTe/CdTe topological insulator

    SciTech Connect

    Zhang, Yuan; Song, Juntao; Li, Yu-Xian

    2015-03-28

    The Seebeck and Nernst effects in HgTe/CdTe quantum wells are studied using the tight-binding Hamiltonian and the nonequilibrium Green's function method. The Seebeck coefficient, S{sub c}, and the Nernst coefficient, N{sub c}, oscillate as a function of E{sub F}, where E{sub F} is the Fermi energy. The Seebeck coefficient shows peaks when the Fermi energy crosses the discrete transverse channels, and the height of the nth peak of the S{sub c} is [ln2/(1/2 +|n|)] for E{sub F} > 0. For the case E{sub F} < 0, the values of the peaks are negative, but the absolute values of the first five peaks are the same as those for E{sub F} > 0. The 6th peak of S{sub c} reaches the value [ln2/1.35] due to a higher density of states. When a magnetic field is applied, the Nernst coefficient appears. However, the values of the peaks for N{sub c} are all positive. For a weak magnetic field, the temperature suppresses the oscillation of the Seebeck and Nernst coefficients but increases their magnitude. For a large magnetic field, because of the highly degenerate Landau levels, the peaks of the Seebeck coefficient at position E{sub F}=−12, 10, 28meV, and Nernst coefficient at E{sub F}=−7, 10meV are robust against the temperature.

  3. Electrical and optical characteristics of two color mid wave HgCdTe infrared detectors

    NASA Astrophysics Data System (ADS)

    Mason, Whitney; Waterman, J. R.

    1999-03-01

    Two-color mid wave triple-layer heterojunction HgCdTe detectors were studied using temperature-dependent current-voltage (I-V) measurements, temperature-dependent spectral response measurements, and temperature-dependent noise measurements. The reverse biased dark current shows diffusion-limited behavior for T>125 K. The same data show evidence for generation-recombination-type behavior for the longer wavelength junction at temperatures between 100 and 125 K. For temperatures less than 100 K, the measurements are background limited by photon flux, even though these measurements are performed at nominal zero background. The upper junction shows soft reverse breakdown voltages on the order of about 250 mV, while the bottom junction shows no breakdown for V<500 mV. At 80 K, the R0A product is in excess of 1×106 Ω cm2. In forward bias, the current-voltage characteristics of the lower junction are diffusion limited for all temperatures, while at lower temperatures, the upper junction showed generation-recombination behavior. Optical measurements found a cutoff wavelength of about 4 μm for the lower junction and about 4.5 μm for the upper junction. The spectral crosstalk was less than 3%. At 80 K, the frequency-dependent noise of the shorter wavelength junction showed no dependence on bias, while for the longer wavelength junction, the noise at lower frequencies increased with bias. There is no difference in the noise characteristics when either the photon flux or the temperature is increased.

  4. Dislocations as a Noise Source in LWIR HgCdTe Photodiodes

    NASA Astrophysics Data System (ADS)

    Jóźwikowski, Krzysztof; Jóźwikowska, Alina; Martyniuk, Andrzej

    2016-02-01

    The effect of dislocation on the 1/f noise current in long-wavelength infrared (LWIR) reverse biased HgCdTe photodiodes working at liquid nitrogen (LN) temperature was analyzed theoretically by using a phenomenological model of dislocations as an additional Shockley-Read-Hall (SRH) generation-recombination (G-R) channel in heterostructure. Numerical analysis was involved to solve the set of transport equations in order to find a steady state values of physical parameters of the heterostructure. Next, the set of transport equations for fluctuations (TEFF) was formulated and solved to obtain the spectral densities (SD) of the fluctuations of electrical potential, quasi-Fermi levels, and temperature. The SD of mobility fluctuations, shot G-R noise, and thermal noise were also taken into account in TEFF. Additional expressions for SD of 1/f fluctuations of the G-R processes were derived. Numerical values of the SD of noise current were compared with the experimental results of Johnson et al. Theoretical analysis has shown that the dislocations increase the G-R processes and this way cause the growth of G-R dark current. Despite the fact that dislocations increase both shot G-R noise and 1/f G-R noise, the main cause of 1/f current noise in LN cooled LWIR photodiodes are fluctuations of the carriers mobility determined by 1/f fluctuations of relaxation times. As the noise current is proportional to the total diode current, growth of G-R dark current caused by dislocations leads to the growth of noise current.

  5. Ag adsorption on Cd-terminated CdS (0 0 0 1) and S-terminated CdS (0 0 0 1-bar) surfaces: First-principles investigations

    SciTech Connect

    Ma, Yandong; Dai, Ying; Wei, Wei; Liu, Xianghong; Huang, Baibiao

    2011-04-15

    First-principles calculations are performed to study the adsorption of Ag at Cd-terminated CdS (0 0 0 1) and S-terminated CdS (0 0 0 1-bar) surfaces as a function of Ag coverage. Our results reveal that Ag adsorption at Cd-terminated (0 0 0 1) has a large binging energy than at S-terminated (0 0 0 1-bar) surface. For Ag adsorption at Cd-terminated (0 0 0 1) surface, T4 structure is more favorable and the Ag-Cd bond posses an ionic-like character. While for Ag adsorption at S-terminated (0 0 0 1-bar) surface, the H3 structure is most stable and the bonding between Ag-S is covalent. It is found that the magnitude and the sign of surface dipole moment are partly determined by the difference between the electronegativities of Ag and the host atom bonding with Ag. The adsorption energy changes as a function of Ag coverage. In addition, related properties of Ag cluster adsorption at Cd-terminated (0 0 0 1) surface are also discussed. -- Graphical abstract: We studied the adsorption of Ag at Cd-terminated CdS (0 0 0 1) and S-terminated CdS (0 0 0 1-bar) surfaces as a function of Ag coverage by means of the first-principles calculations. In addition, related properties of Ag cluster adsorption at Cd-terminated (0 0 0 1) surface are also discussed. Our ab initio calculations are useful complement to the intense experimental studies for Ag-CdS interface. Display Omitted Research highlights: {yields} Ag adsorption effects on electronic structure and associated physics properties of CdS is systemically studied. {yields} The surface dipole moment is partly determined by the difference between the electronegativities of silver and the host atom bonding with silver. {yields} The characteristic of Ag cluster (Ag{sub 2}, Ag{sub 4}, and Ag{sub 7}) adsorption on the CdS (0 0 0 1) surface is discussed.

  6. The growth of CdHgTe on GaAs and fabrication of high-quality photodiodes

    SciTech Connect

    Smith, L.M.; Byrne, C.F.; Patel, D.; Knowles, P.; Thompson, J. ); Jenkin, G.T. ); Nguyen Duy, T.; Durand, A.; Bourdillot, M. )

    1990-03-01

    The use of metal organic vapor phase epitaxy (MOVPE) for the growth of device quality CdHgTe (MCT) on GaAs has been studied extensively. This is the first report of diode formation by mercury diffusion in the MOVPE grown material. It is also the first report of medium-wavelength infrared (MWIR) photodiodes made in the material. The effect of altering the cadmium to tellurium alkyl ratios on the growth of a CdTe buffer on (100) and (111)GaAs was investigated. For every alkyl ratio used, it was possible to grow (111) or (100)CdTe on (100)GaAs. (100)CdTe/(100)GaAs samples exhibited very sharp, well-defined photoluminescence spectra and x-ray rocking curve full width half-maximum (FWHM) peaks of {lt}90 arc s were found for layers of 6--10 {mu}m thick. Generally the (111)CdTe/(111)GaAs layers were dominated by twins, but the growth of untwinned (111)CdTe and MCT is reported. CdTe, high {ital x} MCT, and combinations of CdTe and HgTe layers were used as buffers for (100)MCT growth to reduce the hillock density. The combinations of CdTe and HgTe layers gave rise to the lowest hillock density (at best 30--100/cm{sup 2}) over a large area (25{times}25 mm{sup 2}). FWHMs of 80--90 arc s are routinely achieved for (100)MCT layers. Linear diode arrays have been fabricated with 77 K {ital R}{sub 0}{ital A} values typically of 3{times}10{sup 3} {Omega} cm{sup 2} for 7.5 {mu}m cutoff. The detectivity of a 5.5 {mu}m cutoff diode was 1.5{times}10{sup 11} cm Hz{sup 1/2} W{sup {minus}1} at 77 K, and 1.3{times}10{sup 10} cm Hz{sup 1/2} W{sup {minus}1} at 193 K. This is comparable to the performance obtained with the best traveling heater method devices.

  7. Enhanced visible light photocatalytic performance of ZnO nanowires integrated with CdS and Ag2S.

    PubMed

    Chen, Chienhua; Li, Zhengcao; Lin, Hehnan; Wang, Guojing; Liao, Jiecui; Li, Mingyang; Lv, Shasha; Li, Wei

    2016-02-18

    A series of ZnO-CdS-Ag2S ternary nanostructures with different amounts of Ag2S were prepared using simple and low-cost successive ionic layer adsorption and reaction (SILAR) and a chemical precipitation method. The ZnO nanowires, with a diameter of ∼100 nm and a length of ∼1 μm, were modified by coating CdS and Ag2S. CdS has a high absorption coefficient and can efficiently match with the energy levels of ZnO, which can enhance the light absorption ability of the nanostructures. In addition, Ag2S with a narrow band gap was used as the main light absorber and played an important role in increasing the light absorption in the visible light region. The photocatalytic activity of the ZnO-CdS-Ag2S ternary nanostructures was investigated using the degradation of methyl orange (MO) in an aqueous solution under visible light. The ZnO-CdS-Ag2S ternary nanostructures were found to be more efficient than ZnO nanowires, ZnO-CdS nanowires, and ZnO-Ag2S nanowires. There is 7.68 times more photocatalytic activity for MO degradation in terms of the rate constant for ZnO-CdS-Ag2S 15-cycle ternary nanostructure compared to the as-grown ZnO. Furthermore, the effect of the amount of Ag2S and CdS on the ZnO surface on the photocatalytic activity was analyzed. The superior photo-absorption properties and photocatalytic performance of the ZnO-CdS-Ag2S ternary nanostructures can be ascribed to the heterostructure, which enhanced the separation of the photo-induced electron-hole pairs. In addition, visible light could be absorbed by ZnO-CdS-Ag2S ternary nanostructures rather than by ZnO. PMID:26815888

  8. Toxic metal (Pb, Cd and Hg) levels in the nearshore surface sediments from the European and Anotolian Shores of Bosphorus, Turkey.

    PubMed

    Balkıs, Nuray; Aktan, Yelda; Balkıs, Neslihan

    2012-09-01

    In this study, some toxic metal such as Pb, Cd and Hg analyzes have been done in the nearshore surface sediments. Sediment samples have been collected from five parts from the European and Anotolian Shores of the Bosphorus during 2003-2004. Total Pb, Cd and Hg contents vary between <0.01 μg g(-1) and 238 μg g(-1); <0.01 μg g(-1) and 0.92 μg g(-1); 0.001 μg g(-1) and 0.45 μg g(-1), respectively. Contamination Factor (CF) values of Pb and Cd range between 1 and 3 whilst CF values of Hg are lower than 1 in all the stations. It means that there are no Hg metal enrichment by natural or anthropogenic inputs contrary to moderately contamination for Pb and Cd metals throughout the Bosphorus sediments. PMID:22595152

  9. A new quinoline-based fluorescent probe for Cd(2+) and Hg(2+) with an opposite response in a 100% aqueous environment and live cell imaging.

    PubMed

    Lu, Hong-Lin; Wang, Wei-Kang; Tan, Xing-Xing; Luo, Xiao-Fei; Zhang, Mao-Lin; Zhang, Mei; Zang, Shuang-Quan

    2016-05-10

    A new quinoline-based fluorescent probe was synthesized and characterized. Probe showed opposite fluorescence responses toward Cd(2+) (turn-on) and Hg(2+) (turn-off) in a 100% aqueous environment. X-ray crystallography analysis and TD-DFT calculations showed the different mechanisms of CHEF-based for -Cd(2+) and PET-based for -Hg(2+) caused by different binding modes and different electronic transfer patterns. The detection limits for the analysis of Cd(2+) and Hg(2+) ions were found to be 3.9 × 10(-8) M and 9.8 × 10(-7) M, respectively. Its in vivo sensitivities to Cd(2+) and Hg(2+) were demonstrated in the EC9706 cell line with the use of a laser scanning fluorescence microscope. PMID:27093893

  10. Optical characterization of Hg1-xCdxTe/CdTe/GaAs multilayers grown by molecular beam epitaxy

    NASA Astrophysics Data System (ADS)

    Liu, Weijun; Liu, Pulin; Shi, Guo L.; Zhu, Jing-Bing; He, Li; Xie, Qin X.; Yuan, Shixin

    1991-11-01

    The IR transmission spectra for HgCdTe/CdTe/GaAs multilayers grown by molecular-beam epitaxy were measured in the wavenumber region of 600 cm-1 - 4000 cm-1 at 300 K and 77 K. The transmission spectra were calculated taking the thickness d1 of MCT layer and the thickness d2 of CdTe layer as fitting parameters in the energy range from 600 cm-1 to 300 cm-1 below the energy gap Eg assuming the existence of abrupt interfaces between the neighboring layers. The values of d1 and d2 obtained by fitting the IR transmission spectra are in good agreement with that by transmission electron microscopy (TEM) measurement. The accurate absorption coefficient spectra were obtained and discussed in the energy region equivalent to 0.9 Eg to 4000 cm-1 taking into account the interference effects.

  11. Analysis of thermal cycle-induced dislocation reduction in HgCdTe/CdTe/Si(211) by scanning transmission electron microscopy

    NASA Astrophysics Data System (ADS)

    Jacobs, R. N.; Benson, J. D.; Stoltz, A. J.; Almeida, L. A.; Farrell, S.; Brill, G.; Salmon, M.; Newell, A.

    2013-03-01

    High threading dislocation densities limit the operability of infrared focal plane arrays based on large lattice-mismatched heterostructures such as HgCdTe/CdTe/Si. Recently it has been shown that post-growth thermal cycle annealing can routinely reduce the surface etch pit density from >5×106 cm-2 to as low as 9×105 cm-2. To fully exploit the procedure, a deeper understanding of the inherent dislocation dynamics is needed. In this work, we employ scanning transmission electron microscopy to analyze cross-sectional samples of HgCdTe/CdTe/Si prepared using site-specific focused ion beam milling. A key factor in this work is the use of defect decorated samples, which has allowed for a correlation of surface etch pits to dislocation segments observed in cross-section images. We have observed that the previously reported oval-shaped etch pits are likely associated with Shockley partial type dislocations, and that triangular etch pits are associated with perfect dislocations. This suggests the likelihood that interaction between mobile Shockley partial and other dislocation types are responsible in part for the observed reduction in top surface etch pit density. These studies provide a deeper understanding of dislocation reduction processes which are critical for the realization of high performance infrared detectors based on low-cost, lattice-mismatched substrates.

  12. Split Dirac cones in HgTe/CdTe quantum wells due to symmetry-enforced level anticrossing at interfaces

    NASA Astrophysics Data System (ADS)

    Tarasenko, S. A.; Durnev, M. V.; Nestoklon, M. O.; Ivchenko, E. L.; Luo, Jun-Wei; Zunger, Alex

    2015-02-01

    HgTe is a band-inverted compound which forms a two-dimensional topological insulator if sandwiched between CdTe barriers for a HgTe layer thickness above the critical value. We describe the fine structure of Dirac states in the HgTe/CdTe quantum wells of critical and close-to-critical thicknesses and show that the necessary creation of interfaces brings in another important physical effect: the opening of a significant anticrossing gap between the tips of the Dirac cones. The level repulsion driven by the natural interface inversion asymmetry of zinc-blende heterostructures considerably modifies the electron states and dispersion but preserves the topological transition at the critical thickness. By combining symmetry analysis, atomistic calculations, and extended k .p theory with interface terms, we obtain a quantitative description of the energy spectrum and extract the interface mixing coefficient. We discuss how the fingerprints of the predicted zero-magnetic-field splitting of the Dirac cones could be detected experimentally by studying magnetotransport phenomena, cyclotron resonance, Raman scattering, and THz radiation absorption.

  13. HgCdTe HDVIP detectors and FPAs for strategic applications

    NASA Astrophysics Data System (ADS)

    D'Souza, Arvind I.; Stapelbroek, Maryn G.; Bryan, E. R.; Vinson, Alexander L.; Beck, Jeffrey D.; Kinch, Michael A.; Wan, Chang-Feng; Robinson, James E.

    2003-09-01

    Detector characteristics of Cu- and Au-doped High Density Vertically Integrated Photodiode (HDVIP) detectors as well as Cu-doped HDVIP Focal Plane Arrays (FPAs) are presented in this paper. Individual photodiodes in test bars were examined by measuring I-V curves and the associated resistance-area (RA) product as a function of temperature. The Au-doped MWIR [λc(78 K) = 5 μm] HDVIP detectors RoA performance was within a factor of two or three of theoretical. Noise as a function of frequency has been measured on Au-doped MWIR HgCdTe HDVIP diodes at several temperatures under dark and illuminated conditions. Low-frequency noise performance of the Au-doped MWIR diode in the various environments is characterized by the ratio α of the noise current spectral density at 1 Hz to the value of the diode current. For photocurrent at 140 K, αPHOTO = 1.8 x 10-5. The value of αPHOTO is the same at both zero bias and 100 mV reverse bias. At 160 K, αPHOTO is slightly lower but still in the low 10-5 range. Excess low-frequency noise measured at 140 K and 100 mV reverse bias in the dark has αDARK = 1.4 x 10-5. At 160 K and 100 mV reverse bias, αDARK is in the mid 10-5 range. At 140 K,the dark current at 8.2 V reverse bias was equal to the photocurrent at 100 mV reverse bias and close to the photocurrent at zero bias. αDARK = 1.85 x 10-3 at -8.2 V. This ratio is two orders of magnitude greater than αPHOTO. At 8.2 V reverse bias, the current was amplified by avalanche processes. Similar results were obtained on the Au-doped diode at 160 K. Diffusion current dominates dark current at 100 mV reverse bias at T = 185 K and T = 220 K. The ratio, αDARK approximately αPHOTO in the low to mid 10-5 range, i.e. dark diffusion current generates excess low frequency noise in the same manner as photocurrent. In addition, 256 x 256 Cu-doped detector arrays were fabricated. Initial measurements had seven out of ten FPAs having operabilities greater than 99.45% with the best 256 x 256

  14. Ag2S/CdS/TiO2 Nanotube Array Films with High Photocurrent Density by Spotting Sample Method.

    PubMed

    Sun, Hong; Zhao, Peini; Zhang, Fanjun; Liu, Yuliang; Hao, Jingcheng

    2015-12-01

    Ag2S/CdS/TiO2 hybrid nanotube array films (Ag2S/CdS/TNTs) were prepared by selectively depositing a narrow-gap semiconductor-Ag2S (0.9 eV) quantum dots (QDs)-in the local domain of the CdS/TiO2 nanotube array films by spotting sample method (SSM). The improvement of sunlight absorption ability and photocurrent density of titanium dioxide (TiO2) nanotube array films (TNTs) which were obtained by anodic oxidation method was realized because of modifying semiconductor QDs. The CdS/TNTs, Ag2S/TNTs, and Ag2S/CdS/TNTs fabricated by uniformly depositing the QDs into the TNTs via the successive ionic layer adsorption and reaction (SILAR) method were synthesized, respectively. The X-ray powder diffraction (XRD), scanning electron microscopy (SEM), transmission electron microscopy (TEM), and X-ray photoelectron spectrum (XPS) results demonstrated that the Ag2S/CdS/TNTs prepared by SSM and other films were successfully prepared. In comparison with the four films of TNTs, CdS/TNTs, Ag2S/TNTs, and Ag2S/CdS/TNTs by SILAR, the Ag2S/CdS/TNTs prepared by SSM showed much better absorption capability and the highest photocurrent density in UV-vis range (320~800 nm). The cycles of local deposition have great influence on their photoelectric properties. The photocurrent density of Ag2S/CdS/TNTs by SSM with optimum deposition cycles of 6 was about 37 times that of TNTs without modification, demonstrating their great prospective applications in solar energy utilization fields. PMID:26428017

  15. CD226 as a genetic adjuvant to enhance immune efficacy induced by Ag85A DNA vaccination.

    PubMed

    Li, Yan; Yang, Fangli; Zhu, Junfeng; Sang, Lixuan; Han, Xue; Wang, Danan; Shan, Fengping; Li, Shengjun; Sun, Xun; Lu, Changlong

    2015-03-01

    Antigen-85A (Ag85A) is one of the major proteins secreted by Mycobacterium tuberculosis. Many studies on animal models have shown that vaccination with the recombinant Ag85A-DNA or Ag85A protein induces powerful immune response. However, these vaccines cannot generate sufficient protective immunity in the systemic compartment. CD226, a member of the immunoglobulin superfamily, is expressed in the majority of NK cells, T cells, monocytes, and platelets, and can be served as a co-stimulator that contributes to multiple innate and adaptive responses. However, there has been no study where either CD226 protein or DNA has been used as an adjuvant for vaccine development. The aim of this study was to develop a novel Ag85A DNA vaccine with CD226 as the genetic adjuvant to increase the immune efficacy induced by Ag85A. Oral vaccination with pcDNA3.1-Ag85A-CD226 DNA induced potent immune responses in mice. CD226 was an effective genetic adjuvant that improved the immune efficacy induced by Ag85A and enhanced the activity of cytotoxic T lymphocytes (CTL) and NK cells in mice. Th1 dominant cytokines (i.e. IL-2, IFN-γ and TNF-α), cellular immunity (i.e. CD4(+)IFN-γ(+)T cells and CD8(+)IFN-γ(+)T cells in splenocytes) and MLNs were also significantly elevated by pcDNA3.1-Ag85A-CD226 DNA vaccination. Our results suggest that CD226 is an effective adjuvant to enhance the immune efficacy induced by Ag85A. Our findings provide a new strategy for the development of a DNA vaccine co-expressing Ag85A and CD226. PMID:25582686

  16. Ag2S/CdS/TiO2 Nanotube Array Films with High Photocurrent Density by Spotting Sample Method

    NASA Astrophysics Data System (ADS)

    Sun, Hong; Zhao, Peini; Zhang, Fanjun; Liu, Yuliang; Hao, Jingcheng

    2015-10-01

    Ag2S/CdS/TiO2 hybrid nanotube array films (Ag2S/CdS/TNTs) were prepared by selectively depositing a narrow-gap semiconductor—Ag2S (0.9 eV) quantum dots (QDs)—in the local domain of the CdS/TiO2 nanotube array films by spotting sample method (SSM). The improvement of sunlight absorption ability and photocurrent density of titanium dioxide (TiO2) nanotube array films (TNTs) which were obtained by anodic oxidation method was realized because of modifying semiconductor QDs. The CdS/TNTs, Ag2S/TNTs, and Ag2S/CdS/TNTs fabricated by uniformly depositing the QDs into the TNTs via the successive ionic layer adsorption and reaction (SILAR) method were synthesized, respectively. The X-ray powder diffraction (XRD), scanning electron microscopy (SEM), transmission electron microscopy (TEM), and X-ray photoelectron spectrum (XPS) results demonstrated that the Ag2S/CdS/TNTs prepared by SSM and other films were successfully prepared. In comparison with the four films of TNTs, CdS/TNTs, Ag2S/TNTs, and Ag2S/CdS/TNTs by SILAR, the Ag2S/CdS/TNTs prepared by SSM showed much better absorption capability and the highest photocurrent density in UV-vis range (320~800 nm). The cycles of local deposition have great influence on their photoelectric properties. The photocurrent density of Ag2S/CdS/TNTs by SSM with optimum deposition cycles of 6 was about 37 times that of TNTs without modification, demonstrating their great prospective applications in solar energy utilization fields.

  17. Development of aluminum (Al5083)-clad ternary Ag In Cd alloy for JSNS decoupled moderator

    NASA Astrophysics Data System (ADS)

    Teshigawara, M.; Harada, M.; Saito, S.; Oikawa, K.; Maekawa, F.; Futakawa, M.; Kikuchi, K.; Kato, T.; Ikeda, Y.; Naoe, T.; Koyama, T.; Ooi, T.; Zherebtsov, S.; Kawai, M.; Kurishita, H.; Konashi, K.

    2006-09-01

    To develop Ag (silver)-In (indium)-Cd (cadmium) alloy decoupler, a method is needed to bond the decoupler between Al alloy (Al5083) and the ternary Ag-In-Cd alloy. We found that a better HIP condition was temperature, pressure and holding time at 803 K, 100 MPa and 10 min. for small test pieces ( ϕ22 mm in dia. × 6 mm in height). Hardened layer due to the formation of AlAg 2 was found in the bonding layer, however, the rupture strength of the bonding layer is more than 30 MPa, the calculated design stress. Bonding tests of a large size piece (200 × 200 × 30 mm 3), which simulated the real scale, were also performed according to the results of small size tests. The result also gave good bonding and enough required-mechanical-strength.

  18. Surface studies on bimetallic thiocyanate ligand based single crystals of MnHg(SCN) 4, CdHg(SCN) 4 and ZnCd(SCN) 4

    NASA Astrophysics Data System (ADS)

    Rajesh Kumar, T.; Jeyasekaran, R.; Ravi Kumar, S. M.; Vimalan, M.; Sagayaraj, P.

    2010-12-01

    Bimetallic SCN ligand based single crystals of manganese mercury thiocyanate (MMTC), cadmium mercury thiocyanate (CMTC) and zinc cadmium thiocyanate (ZCTC) are grown by slow solvent evaporation technique. The growth mechanism and surface features are investigated by optical microscopic techniques such as scanning electron microscopy (SEM) and atomic force microscopy (AFM). The laser induced surface damage measurements were carried out using a Q-switched Nd:YAG laser at 1064 nm with laser beam of 1.0 Hz and pulse duration 25 ps. The laser damage threshold values of MMTC, CMTC and ZCTC are found to be 15.9, 22.9 and 19.7 GW/cm 2, respectively. The SEM analysis of MMTC reveals the formation of elongated dendrite growth pattern caused by the fluctuations of Mn and Hg metal ligands when thiocyanate (SCN) bridges them. The etching study indicates the occurrence of different types of etch pit patterns like terraced triangles, pillars, pyramids and rods. The AFM images confirm the formation of three major hillocks with cavities in MMTC. The measured roughness values for CMTC crystal are very much lower than that of MMTC.

  19. Models for convection and segregation in the growth of HgCdTe by the vertical Bridgman method

    NASA Technical Reports Server (NTRS)

    Kim, Do Hyun; Brown, Robert A.

    1989-01-01

    Transport processes in the vertical Bridgman growth of Hg(1-x)Cd(x)Te were investigated by numerical analysis of an idealized quasi-steady-state model of this system. The analysis was specifically directed at an explanation for the radial and axial segregation data obtained by Szofran and Lehoczky (1984) and Szofran et al. (1984) on this system, who reported, respectively, on the observations of diffusion-controlled axial segregation and on the presence of large compositional nonuniformities of CdTe across the radius of the crystal. It is shown that the data sets of these groups can be explained by the results of a detailed analysis of heat transfer, convection, and species transport which account for thermosolutal convection in the melt and for heat transfer mechanisms that dominate the HgCdTe alloy. Predictions from this analysis is applicable to the growth of other materials, because they suggest conditions for the growth of radially uniform crystals with nearly constant axial composition profiles.

  20. Large-Format HgCdTe Dual-Band Long-Wavelength Infrared Focal-Plane Arrays

    NASA Astrophysics Data System (ADS)

    Smith, E. P. G.; Venzor, G. M.; Gallagher, A. M.; Reddy, M.; Peterson, J. M.; Lofgreen, D. D.; Randolph, J. E.

    2011-08-01

    Raytheon Vision Systems (RVS) continues to further its capability to deliver state-of-the-art high-performance, large-format, HgCdTe focal-plane arrays (FPAs) for dual-band long-wavelength infrared (L/LWIR) detection. Specific improvements have recently been implemented at RVS in molecular-beam epitaxy (MBE) growth and wafer fabrication and are reported in this paper. The aim of the improvements is to establish producible processes for 512 × 512 30- μm-unit-cell L/LWIR FPAs, which has resulted in: the growth of triple-layer heterojunction (TLHJ) HgCdTe back-to-back photodiode detector designs on 6 cm × 6 cm CdZnTe substrates with 300-K Fourier-transform infrared (FTIR) cutoff wavelength uniformity of ±0.1 μm across the entire wafer; demonstration of detector dark-current performance for the longer-wavelength detector band approaching that of single-color liquid-phase epitaxy (LPE) LWIR detectors; and uniform, high-operability, 512 × 512 30- μm-unit-cell FPA performance in both LWIR bands.

  1. Development of High-Performance eSWIR HgCdTe-Based Focal-Plane Arrays on Silicon Substrates

    NASA Astrophysics Data System (ADS)

    Park, J. H.; Pepping, J.; Mukhortova, A.; Ketharanathan, S.; Kodama, R.; Zhao, J.; Hansel, D.; Velicu, S.; Aqariden, F.

    2016-09-01

    We report the development of high-performance and low-cost extended short-wavelength infrared (eSWIR) focal-plane arrays (FPAs) fabricated from molecular beam epitaxial (MBE)-grown HgCdTe on Si-based substrates. High-quality n-type eSWIR HgCdTe (cutoff wavelength ˜2.68 μm at 77 K, electron carrier concentration 5.82 × 1015 cm-3) layers were grown on CdTe/Si substrates by MBE. High degrees of uniformity in composition and thickness were demonstrated over three-inch areas, and low surface defect densities (voids 9.56 × 101 cm-2, micro-defects 1.67 × 103 cm-2) were measured. This material was used to fabricate 320 × 256 format, 30 μm pitch FPAs with a planar device architecture using arsenic implantation to achieve p-type doping. The dark current density of test devices showed good uniformity between 190 K and room temperature, and high-quality eSWIR imaging from hybridized FPAs was obtained with a median dark current density of 2.63 × 10-7 A/cm2 at 193 K with a standard deviation of 1.67 × 10-7 A/cm2.

  2. Minority carrier lifetimes of metalorganic chemical vapor deposition long-wavelength infrared HgCdTe on GaAs

    NASA Astrophysics Data System (ADS)

    Zucca, R.; Edwall, D. D.; Chen, J. S.; Johnston, S. L.; Younger, C. R.

    1991-10-01

    Metalorganic chemical vapor deposition (MOCVD) growth of HgCdTe on GaAs is a promising technique that overcomes the size and crystal quality limitations of CdTe substrates. An important material parameter is the minority carrier liftetime, which determines the ultimate zero bias impedance and quantum efficiency of a photodiode. We present the first systematic study of the temperature and carrier concentration dependence of minority carrier lifetimes on n-type and p-type layers of MOCVD long-wavelength infrared HgCdTe grown on GaAs substrates. The temperature dependencies of the lifetime are compared with theoretical predictions based on Auger, radiative, and Shockley-Read recombination. Excellent fits are obtained over a broad temperature range, from 20 K to room temperature. The experimental lifetimes of n-type material reach the theoretical limit imposed by Auger+radiative recombination for carrier concentrations higher than 2×1015 cm-3. For lower carrier concentrations, the measured lifetimes are shorter than those predicted from Auguer+radiative recombination, and Shockley-Read recombination must be added to the calculations. The lifetimes of arsenic-doped and vacancy-doped p-type material are Shockley-Read limited. They are one order of magnitude longer than those previously observed on vacancy-doped liquid phase epitaxy material.

  3. Hole Transport in Arsenic-Doped Hg1- x Cd x Te with x ≥ 0.5

    NASA Astrophysics Data System (ADS)

    Umana-Membreno, G. A.; Kala, H.; Bains, S.; Akhavan, N. D.; Antoszewski, J.; Maxey, C. D.; Faraone, L.

    2016-09-01

    Hole transport in arsenic-doped p-type Hg1- x Cd x Te epitaxial layers with x ≥ 0.5 has been studied employing Hall-effect measurements and theoretical modeling of hole scattering mechanisms. The hole transport parameters extracted from four different Hg1- x Cd x Te films with x = 0.50, 0.56-0.58, 0.65, and 0.80, were analyzed using an iterative solution of Boltzmann's transport equation. Hole mobilities in the samples with x values of 0.5 and 0.56-0.58 were found to be predominantly limited by ionized impurity scattering, and exhibited relatively high impurity compensation ratios ≥2. The sample with x = 0.65 exhibited the highest hole mobility, a low compensation ratio of 1.05, and mobility characteristics were limited predominantly by polar optical phonon scattering at temperatures ≥200 K. Hole mobility in the sample with x = 0.80 was found to be limited by polar optical phonon scattering and ionized impurity scattering (compensation ratio 1.20-1.56). Although the sample temperatures employed were not sufficiently low to unambiguously discriminate the scattering strength of static strain and dislocations, the experimental hole mobility characteristics cannot be adequately modeled if these two mechanisms are neglected. The ionization energy of the arsenic acceptor impurities was found to exhibit a quadratic dependence on the CdTe mole fraction.

  4. Hole Transport in Arsenic-Doped Hg1-x Cd x Te with x ≥ 0.5

    NASA Astrophysics Data System (ADS)

    Umana-Membreno, G. A.; Kala, H.; Bains, S.; Akhavan, N. D.; Antoszewski, J.; Maxey, C. D.; Faraone, L.

    2016-04-01

    Hole transport in arsenic-doped p-type Hg1-x Cd x Te epitaxial layers with x ≥ 0.5 has been studied employing Hall-effect measurements and theoretical modeling of hole scattering mechanisms. The hole transport parameters extracted from four different Hg1-x Cd x Te films with x = 0.50, 0.56-0.58, 0.65, and 0.80, were analyzed using an iterative solution of Boltzmann's transport equation. Hole mobilities in the samples with x values of 0.5 and 0.56-0.58 were found to be predominantly limited by ionized impurity scattering, and exhibited relatively high impurity compensation ratios ≥2. The sample with x = 0.65 exhibited the highest hole mobility, a low compensation ratio of 1.05, and mobility characteristics were limited predominantly by polar optical phonon scattering at temperatures ≥200 K. Hole mobility in the sample with x = 0.80 was found to be limited by polar optical phonon scattering and ionized impurity scattering (compensation ratio 1.20-1.56). Although the sample temperatures employed were not sufficiently low to unambiguously discriminate the scattering strength of static strain and dislocations, the experimental hole mobility characteristics cannot be adequately modeled if these two mechanisms are neglected. The ionization energy of the arsenic acceptor impurities was found to exhibit a quadratic dependence on the CdTe mole fraction.

  5. Development of High-Performance eSWIR HgCdTe-Based Focal-Plane Arrays on Silicon Substrates

    NASA Astrophysics Data System (ADS)

    Park, J. H.; Pepping, J.; Mukhortova, A.; Ketharanathan, S.; Kodama, R.; Zhao, J.; Hansel, D.; Velicu, S.; Aqariden, F.

    2016-06-01

    We report the development of high-performance and low-cost extended short-wavelength infrared (eSWIR) focal-plane arrays (FPAs) fabricated from molecular beam epitaxial (MBE)-grown HgCdTe on Si-based substrates. High-quality n-type eSWIR HgCdTe (cutoff wavelength ˜2.68 μm at 77 K, electron carrier concentration 5.82 × 1015 cm-3) layers were grown on CdTe/Si substrates by MBE. High degrees of uniformity in composition and thickness were demonstrated over three-inch areas, and low surface defect densities (voids 9.56 × 101 cm-2, micro-defects 1.67 × 103 cm-2) were measured. This material was used to fabricate 320 × 256 format, 30 μm pitch FPAs with a planar device architecture using arsenic implantation to achieve p-type doping. The dark current density of test devices showed good uniformity between 190 K and room temperature, and high-quality eSWIR imaging from hybridized FPAs was obtained with a median dark current density of 2.63 × 10-7 A/cm2 at 193 K with a standard deviation of 1.67 × 10-7 A/cm2.

  6. High frequency of circulating HBcAg-specific CD8 T cells in hepatitis B infection: a flow cytometric analysis

    PubMed Central

    Matsumura, S; Yamamoto, K; Shimada, N; Okano, N; Okamoto, R; Suzuki, T; Hakoda, T; Mizuno, M; Higashi, T; Tsuji, T

    2001-01-01

    Viral antigen-specific T cells are important for virus elimination. We studied the hepatitis B virus (HBV)-specific T cell response using flow cytometry. Three phases of HBV infection were studied: Group A, HBeAg (+) chronic hepatitis; Group B, HBeAb (+) HBV carrier after seroconversion; and Group C, HBsAb (+) phase. Peripheral T cells were incubated with recombinant HB core antigen (HBcAg), and intracytoplasmic cytokines were analysed by flow cytometry. HBcAg-specific CD4 and CD8 T cells were identified in all three groups and the number of IFN-γpositive T cells was greater than TNF-α-positive T cells. The frequency of IFN-γ-positive CD4 and CD8 T cells was highest in Group C, compared with Groups A and B. No significant difference in the HBcAg-specific T cell response was observed between Group A and Group B. The HBcAg-specific CD8 T cell response was diminished by CD4 depletion, addition of antibody against human leucocyte antigen (HLA) class I, class II or CD40L. Cytokine-positive CD8 T cells without HBcAg stimulation were present at a high frequency (7 of 13 cases) in Group B, but were rare in other groups. HBcAg-specific T cells can be detected at high frequency by a sensitive flow cytometric analysis, and these cells are important for controlling HBV replication. PMID:11472405

  7. Biomonitoring of heavy metals (Cd, Hg, and Pb) and metalloid (As) with the Portuguese common buzzard (Buteo buteo).

    PubMed

    Carneiro, Manuela; Colaço, Bruno; Brandão, Ricardo; Ferreira, Carla; Santos, Nuno; Soeiro, Vanessa; Colaço, Aura; Pires, Maria João; Oliveira, Paula A; Lavín, Santiago

    2014-11-01

    The accumulation of heavy metals in the environment may have a wide range of health effects on animals and humans. Thus, in this study, the concentrations of arsenic (As), cadmium (Cd), lead (Pb), and mercury (Hg) in the blood and tissues (liver and kidney) of Portuguese common buzzards (Buteo buteo) were determined by inductively coupled plasma-mass spectrometer (ICP-MS) in order to monitor environmental pollution to these elements. In general, Hg and As were the elements which appeared in the highest and lowest concentrations, respectively. A highest percentage of non-detected concentration was found for blood Cd (94.6 %) but, in turn, it was the only metal that was detected in all kidney samples. The kidney was the analyzed sample which showed the highest concentrations of each element evaluated. Statistically, significant differences among blood, liver, and kidney samples were observed for As and Cd (P < 0.05). Cd concentrations in kidney and liver varied significantly with age: Adults showed higher hepatic and renal Cd concentrations than juveniles. Blood Pb concentration seems to show an association with the hunting season. Although raptors are at the top of the food chain and are thus potentially exposed to any biomagnification processes that may occur in a food web, the individuals evaluated in this study generally had low levels of heavy metals in blood and tissues. However, chronic exposure to these metals was verified. The results presented here lend weight to arguments in favor of continuous biomonitoring of metals and metalloids, since heavy metals may accumulate to levels that will pose a risk to both human health and the environment. PMID:25074364

  8. Performance of MWIR and SWIR HgCdTe-based focal plane arrays at high operating temperatures

    NASA Astrophysics Data System (ADS)

    Melkonian, Leon; Bangs, James; Elizondo, Lee; Ramey, Ron; Guerrero, Ernesto

    2010-04-01

    Raytheon Vision Systems (RVS) is producing large format, high definition HgCdTe-based MWIR and SWIR focal plane arrays (FPAs) with pitches of 15 μm and smaller for various applications. Infrared sensors fabricated from HgCdTe have several advantages when compared to those fabricated from other materials -- such as a highly tunable bandgap, high quantum efficiencies, and R0A approaching theoretical limits. It is desirable to operate infrared sensors at elevated operating temperatures in order to increase the cooler life and reduce the required system power. However, the sensitivity of many infrared sensors, including those made from HgCdTe, declines significantly above a certain temperature due to the noise resulting from increasing detector dark current. In this paper we provide performance data on a MWIR and a SWIR focal plane array operating at temperatures up to 160K and 170K, respectively. The FPAs used in the study were grown by molecular beam epitaxy (MBE) on silicon substrates, processed into a 1536x1024 format with a 15 μm pixel pitch, and hybridized to a silicon readout integrated circuit (ROIC) via indium bumps to form a sensor chip assembly (SCA). This data shows that the noise equivalent delta temperature (NEDT) is background limited at f/3.4 in the SWIR SCA (cutoff wavelength of 3.7 μm at 130K) up to 140K and in the MWIR SCA (cutoff wavelength of 4.8 μm at 115K) up to 115K.

  9. A Highly Sensitive Multi-Element HgCdTe E-APD Detector for IPDA Lidar Applications

    NASA Technical Reports Server (NTRS)

    Beck, Jeff; Welch, Terry; Mitra, Pradip; Reiff, Kirk; Sun, Xiaoli; Abshire, James

    2014-01-01

    An HgCdTe electron avalanche photodiode (e-APD) detector has been developed for lidar receivers, one application of which is integrated path differential absorption lidar measurements of such atmospheric trace gases as CO2 and CH4. The HgCdTe APD has a wide, visible to mid-wave-infrared, spectral response, high dynamic range, substantially improved sensitivity, and an expected improvement in operational lifetime. A demonstration sensor-chip assembly consisting of a 4.3 lm cutoff HgCdTe 4 9 4 APD detector array with 80 micrometer pitch pixels and a custom complementary metal-oxide-semiconductor readout integrated circuit was developed. For one typical array the APD gain was 654 at 12 V with corresponding gain normalized dark currents ranging from 1.2 fA to 3.2 fA. The 4 9 4 detector system was characterized at 77 K with a 1.55 micrometer wavelength, 1 microsecond wide, laser pulse. The measured unit gain detector photon conversion efficiency was 91.1%. At 11 V bias the mean measured APD gain at 77 K was 307.8 with sigma/mean uniformity of 1.23%. The average, noise-bandwidth normalized, system noise-equivalent power (NEP) was 1.04 fW/Hz(exp 1/2) with a sigma/mean of 3.8%. The measured, electronics-limited, bandwidth of 6.8 MHz was more than adequate for 1 microsecond pulse detection. The system had an NEP (3 MHz) of 0.4 fW/Hz(exp 1/2) at 12 V APD bias and a linear dynamic range close to 1000. A gain-independent quantum-limited SNR of 80% of full theoretical was indicative of a gain-independent excess noise factor very close to 1.0 and the expected APD mode quantum efficiency.

  10. Comment on ``Temperature-induced intraband transitions in the n-type HgTe/CdTe superlattice''

    NASA Astrophysics Data System (ADS)

    Meyer, J. R.; Hoffman, C. A.; Wagner, R. J.; Bartoli, F. J.

    1991-06-01

    On the basis of magneto-optical measurements on a HgTe-CdTe superlattice, Choi et al. [Phys. Rev. B 41, 10872 (1990)] have argued that the valence-band offset must be on the order of 40 meV. We show that rather than representing cyclotron resonance by electrons in the interior of the superlattice, the minima in their magnetotransmission spectra are more readily interpreted in terms of quasi-two-dimensional electrons residing near the interface of the superlattice with the substrate. When nonparabolicity is taken into account, the data are consistent with the large body of evidence favoring a large valence-band offset in this system.

  11. Magneto-optical transitions between subbands with different quantum numbers in narrow gap HgTe-CdTe superlattices

    NASA Astrophysics Data System (ADS)

    Luo, H.; Yang, G. L.; Furdyna, J. K.; Ram-Mohan, L. R.

    1991-10-01

    Magneto-optical transitions induced by the coupling between the conduction and the valence bands through the momentum matrix element, and by the coupling terms between light and heavy holes resulting from an applied magnetic field are studied theoretically in narrow gap HgTe-CdTe superlattices. Selection rules and transition probabilities for the above transitions are presented and compared with allowed transitions. The numerical results for the transition probabilities show that some of the interband transitions with ΔN=±1 are significant and have to be considered in the studies of interband magneto-optical spectra of narrow gap superlattices.

  12. Photogalvanic effect in the HgTe/CdTe topological insulator due to edge-bulk optical transitions

    NASA Astrophysics Data System (ADS)

    Kaladzhyan, V.; Aseev, P. P.; Artemenko, S. N.

    2015-10-01

    We study theoretically the 2D HgTe/CdTe quantum well topological insulator illuminated by circularly polarized light with frequencies higher than the difference between the equilibrium Fermi level and the bottom of the conduction band (THz range). We show that electron-hole asymmetry results in spin-dependent electric dipole transitions between edge and bulk states, and we predict an occurrence of a circular photocurrent. If the edge state is tunnel-coupled to a conductor, then the photocurrent can be detected by measuring an electromotive force in the conductor, which is proportional to the photocurrent.

  13. Physics-based simulation of the modulation transfer function in HgCdTe infrared detector arrays.

    PubMed

    Pinkie, Benjamin; Schuster, Jonathan; Bellotti, Enrico

    2013-07-15

    We have developed a numerical technique for performing physics-based simulations of the modulation transfer function (MTF) of infrared detector focal plane arrays. The finite-difference time-domain and finite element methods are employed to determine the electromagnetic and electrical response, respectively. We show how the total MTF can be decomposed to analyze the effect of lateral diffusion of charge carriers and present several methods for mitigation of such effects. We employ our numerical technique to analyze the MTF of a HgCdTe two-color bias-selectable infrared detector array. PMID:23939107

  14. Terahertz radiation from Cd{sub x}Hg{sub 1-x}Te photoexcited by femtosecond laser pulses

    SciTech Connect

    Krotkus, A.; Adomavicius, R.; Molis, G.; Urbanowicz, A.; Eusebe, H.

    2004-10-01

    Terahertz radiation from Cd{sub x}Hg{sub 1-x}Te samples excited by femtosecond Ti:sapphire laser pulses were measured by using an ultrafast photoconductive antenna manufactured from low-temperature grown GaAs. Terahertz fields radiated by the samples of all three investigated alloy compositions with x=0, 0.2, and 0.3 were of the same order of magnitude. No azimuthal angle dependence of the radiated signal was detected, which evidences that linear current surge effect is dominating over nonlinear optical rectification.

  15. Numerical simulation of crosstalk in reduced pitch HgCdTe photon-trapping structure pixel arrays.

    PubMed

    Schuster, Jonathan; Bellotti, Enrico

    2013-06-17

    We have investigated crosstalk in HgCdTe photovoltaic pixel arrays employing a photon trapping (PT) structure realized with a periodic array of pillars intended to provide broadband operation. We have found that, compared to non-PT pixel arrays with similar geometry, the array employing the PT structure has a slightly higher optical crosstalk. However, when the total crosstalk is evaluated, the presence of the PT region drastically reduces the total crosstalk; making the use of the PT structure not only useful to obtain broadband operation, but also desirable for reducing crosstalk in small pitch detector arrays. PMID:23787659

  16. A method for interface shape control during Bridgman type crystal growth of HgCdTe alloys

    NASA Technical Reports Server (NTRS)

    Szofran, F. R.; Lehoczky, S. L.

    1984-01-01

    A method is described for interface shape control of Hg(1-x)Cd(x)Te alloys during Bridgman-type crystal growth. The authors have used this method for several years to obtain the flat or convex interface shapes required for simultaneously reducing radial compositional variations and crystal defects. The method turns to advantage the thick-walled, fused-silica ampules required for growing these alloys. A proper combination of furnace geometry (two isothermal zones separated by a thin barrier), upper- and lower-zone temperatures, and growth rate is required. Examples of results are reported.

  17. Anthropogenic and geogenic Cd, Hg, Pb and Se sources of contamination in a brackish aquifer below agricultural fields

    NASA Astrophysics Data System (ADS)

    Mastrocicco, Micòl; Colombani, Nicolò; Di Giuseppe, Dario; Faccini, Barbara; Ferretti, Giacomo; Coltorti, Massimo

    2015-04-01

    Groundwater quality is often threatened by industrial, agricultural and land use practices (anthropogenic input). In deltaic areas is however difficult to distinguish between geogenic and anthropogenic inorganic contaminants pollution, since these phenomena can influence each other and often display a seasonal cycling. The effect of geogenic groundwater ionic strength (>10 g/l) on the mobility of trace elements like Cd, Hg, Pb and Se was studied in combination with the anthropogenic sources of these elements (fertilizers) in a shallow aquifer. The site is located in the Po river plain (Northern Italy) in an agricultural field belonging to a reclaimed deltaic environment, near Codigoro town. It is 6 ha wide and is drained by a subsurface drainage system made of PVC tile drains with a slope of 3‰, which provides gravity drainage towards two ditches that in turn discharge in a main channel. The whole area has been intensively cultivated with cereal rotation since 1960, mainly using synthetic urea as nitrogen fertilizer at an average rate of 180 kg-N/ha/y and pig slurry at an average rate of 60 kg-N/ha/y. The sediments were analyzed for major and trace elements via XRF, while major ions in groundwater were analyzed via IC and trace elements via ICP-MS. Three monitoring wells, with an inner diameter of 2 cm and screened down to 4 m below ground level, were set up in the field and sampled every four month from 2012 to 2014. The use of intensive depth profiles with resolution of 0.5 m in three different locations, gave insights into groundwater and sediment matrix interactions. To characterize the anthropogenic inputs synthetic urea and pig slurry were analyzed for trace elements via ICP-MS. The synthetic urea is a weak source of Cd and Hg (~1 ppb), while Se and Pb are found below detection limits. The pig slurry is a much stronger source of Se (~19 ppb) and Pb (~23 ppb) and a weak source of Cd (~3 ppb) and Hg (~2 ppb). Although, the mass loading rate pig slurry is

  18. Toward selective, sensitive, and discriminative detection of Hg(2+) and Cd(2+)via pH-modulated surface chemistry of glutathione-capped gold nanoclusters.

    PubMed

    Huang, Pengcheng; Li, Sha; Gao, Nan; Wu, Fangying

    2015-11-01

    Heavy metal pollution can exert severe effects on the environment and human health. Simple, selective, and sensitive detection of heavy metal ions, especially two or more, using a single probe, is thereby of great importance. In this study, we report a new and facile strategy for discriminative detection of Hg(2+) and Cd(2+) with high selectivity and sensitivity via pH-modulated surface chemistry of the glutathione-capped gold NCs (GSH-Au NCs). By simply adjusting pH values of the colloidal solution of the NCs, Hg(2+) could specifically turn off the fluorescence under acidic pH, however, Cd(2+) could exclusively turn on the fluorescence under alkaline pH. This enables the NCs to serve as a dual fluorescent sensor for Hg(2+) and Cd(2+). We demonstrate that these two opposing sensing modes are presumably due to different interaction mechanisms: Hg(2+) induces aggregation by dissociating GSH from the Au surface via robust coordination and, Cd(2+) could passivate the Au surface by forming a Cd-GSH complex with a compact structure. Finally, the present strategy is successfully exploited to separately determine Hg(2+) and Cd(2+) in environmental water samples. PMID:26347906

  19. Preparation, characterization, and bacteriostasis of AgNP-coated β-CD grafting cellulose beads.

    PubMed

    Wang, Ting; Li, Bin; Lin, Li

    2013-03-01

    A novel functional material of β-cyclodextrin (β-CD) grafting cellulose beads containing immobilized silver nanoparticles (AgNPs) is presented in this paper. The morphology was characterized by scanning electron microscopy, energy-dispersive X-ray, and X-ray photoelectron spectroscopy. Phenolphthalein probe molecule technique was used to detect the activity of the grafting β-CD, and the results demonstrated that the deposition of AgNPs had no influence on its encapsulation ability. Acid resistance of the AgNPs on the bead material was studied by atomic absorption spectrometry. The stability of the AgNPs was enhanced due to the grafting of β-CD. Tube dilution method was applied to study the bacteriostatic effect, and the minimal inhibitory doses of the novel material against Escherichia coli and Staphylococcus aureus were 12.5 and 25 mg, respectively. The minimal bactericidal doses for the two bacteria were 25 and 25 mg, respectively. PMID:23340866

  20. Analysis of surface and bulk effects in HgCdTe photodetector arrays by variable-area diode test structures

    NASA Astrophysics Data System (ADS)

    Deng, Yi; Lin, Chun; Hu, Xiaoning

    2009-07-01

    This study describes variable-area diode data analysis of surface and bulk effects of HgCdTe infrared photodiodes passivated with dual-layer CdTe/ZnS films. We attempt to present a general analytical relation between the zero-bias resistance-area product and the perimeter-to-area ratio of the diodes by variable-area diode array test structures. We have taken contributions into consideration from surface leakage between HgCdTe and passivant due to band bending, surface generation currents in the depletion region close to the HgCdTe-passivant interface, and the bulk currents. The model we use is based on the one put forward by Vishnu Gopal. The variable-area diode data analysis can be of great practical help in identifying the various possible mechanism contributing to the surface leakage currents. Through data analysis and curve fitting, we can also get some other useful parameters (like junction depth), which can be the reference to other experiment results. The experimental samples we used range from 20μm to 200μm in size and include both square and circular diode geometries. The conventional boron implantation was used to form the p-n junction and Au was used for the metal pads. The insulating layers of CdTe and ZnS were both electron-beam evaporated at a rate of 1.3 Å/sec. The fabricated diode test patterns were wire-bonded and packaged into a dewar system. I-V measurements were performed using a Keithley 4200 parameter analyzer. The data analysis and curve fitting are all dealt with by MATLAB. Through the results we can find that the surface leakage is nearly the same to the bulk current in diameter between 50~150μm, which indicate that surface leakage is still a dominating dark current in small dimension diode. The results also showed that diodes from 50 to 150μm in size have better performance than the larger or smaller ones and this can be explained by the limit of material imperfection and the limit of processing techniques.

  1. High operating temperature SWIR p+-n FPA based on MBE-grown HgCdTe/Si(0 1 3)

    NASA Astrophysics Data System (ADS)

    Bazovkin, V. M.; Dvoretsky, S. A.; Guzev, A. A.; Kovchavtsev, A. P.; Marin, D. V.; Polovinkin, V. G.; Sabinina, I. V.; Sidorov, G. Yu.; Tsarenko, A. V.; Vasil'ev, V. V.; Varavin, V. S.; Yakushev, M. V.

    2016-05-01

    The characteristics of SWIR (1.6-3 μm) 320 × 256 and 1024 × 1024 focal plane arrays (FPA's) based on n-type In-doped HgCdTe heteroepitaxial layers are reported. The HgCdTe layers were grown by molecular beam epitaxy on silicon substrates with ZnTe and CdTe buffer layers. p-n junctions were formed by arsenic ion implantation into HgCdTe film. Reverse current in the temperature range from 210 to 330 K was found to be limited by the diffusion mechanism. At the same time in the temperature range from 140 to 210 K the reverse current was dominated by the thermal generation of charge carriers through deep traps located in the middle of the band gap. At 170 K NETD was less than 40 mK.

  2. Synthesis, Characterization and Thermal Studies of Zn(II), Cd(II) and Hg(II) Complexes of N-Methyl-N-Phenyldithiocarbamate: The Single Crystal Structure of [(C6H5)(CH3)NCS2]4Hg2

    PubMed Central

    Onwudiwe, Damian C.; Ajibade, Peter A.

    2011-01-01

    Zn(II), Cd(II) and Hg(II) complexes of N-methyl-N-phenyl dithiocarbamate have been synthesized and characterized by elemental analysis and spectral studies (IR, 1H and 13C-NMR). The single crystal X-ray structure of the mercury complex revealed that the complex contains a Hg centre with a distorted tetrahedral coordination sphere in which the dinuclear Hg complex resides on a crystallographic inversion centre and each Hg atom is coordinated to four S atoms from the dithiocarbamate moiety. One dithiocarbamate ligand acts as chelating ligand while the other acts as chelating bridging ligand between two Hg atoms, resulting in a dinuclear eight-member ring. The course of the thermal degradation of the complexes has been investigated using thermogravimetric and differential thermal analyses techniques. Thermogravimetric analysis of the complexes show a single weight loss to give MS (M = Zn, Cd, Hg) indicating that they might be useful as single source precursors for the synthesis of MS nanoparticles and thin films. PMID:21673933

  3. Phase Stability and Electronic Structure of In-Free Photovoltaic Materials Cu2IISnSe4 (II: Zn, Cd, Hg)

    NASA Astrophysics Data System (ADS)

    Nakamura, Satoshi; Maeda, Tsuyoshi; Wada, Takahiro

    2011-05-01

    We have theoretically evaluated the phase stability and electronic structure of Cu2CdSnSe4 and Cu2HgSnSe4 and compared the results with those of Cu2ZnSnSe4. The enthalpies of formation for kesterite (KS), stannite (ST), and wurtz-stannite (WST) phases of Cu2ZnSnSe4 (CZTSe), Cu2CdSnSe4, and Cu2HgSnSe4 were calculated by first-principles calculations. In Cu2CdSnSe4 and Cu2HgSnSe4, the stannite (ST) phase is the most stable among these phases. The valence band maximum (VBM) of ST-type Cu2CdSnSe4 consists of antibonding orbitals of Cu 3d and Se 4p, while the conduction band minimum (CBM) consists of antibonding orbitals of Sn 5s and Se 4p. The VBM of Cu2HgSnSe4 also consist of antibonding orbitals of Cu 3d and Se 4p. However, the CBM of Cu2HgSnSe4 consists of antibonding orbitals of Hg 6s, Sn 5s, and Se 4p.

  4. The spatial and temporal trends of Cd, Cu, Hg, Pb and Zn in Seine River floodplain deposits (1994-2000)

    USGS Publications Warehouse

    Grosbois, C.; Meybeck, M.; Horowitz, A.; Ficht, A.

    2006-01-01

    Fresh floodplain deposits (FD), from 11 key stations, covering the Seine mainstem and its major tributaries (Yonne, Marne and Oise Rivers), were sampled from 1994 to 2000. Background levels for Cd, Cu, Hg, Pb, and Zn were established using prehistoric FD and actual bed sediments collected in small forested sub-basins in the most upstream part of the basin. Throughout the Seine River Basin, FD contain elevated concentrations of Cd, Cu, Hg, Pb and Zn compared to local background values (by factors > twofold). In the Seine River Basin, trace element concentrations display substantial downstream increases as a result of increasing population densities, particularly from Greater Paris (10 million inhabitants), and reach their maxima at the river mouth (Poses). These elevated levels make the Seine one of the most heavily impacted rivers in the world. On the other hand, floodplain-associated trace element levels have declined over the past 7 years. This mirrors results from contemporaneous suspended sediment surveys at the river mouth for the 1984-1999 period. Most of these temporal declines appear to reflect reductions in industrial and domestic solid wastes discharged from the main Parisian sewage plant (Seine Aval). ?? 2005 Elsevier B.V. All rights reserved.

  5. Numerical Modeling of HgCdTe Solidification: Effects of Phase Diagram, Double-Diffusion Convection and Microgravity Level

    NASA Technical Reports Server (NTRS)

    Bune, Andris V.; Gillies, Donald C.; Lehoczky, Sandor L.

    1997-01-01

    Melt convection, along with species diffusion and segregation on the solidification interface are the primary factors responsible for species redistribution during HgCdTe crystal growth from the melt. As no direct information about convection velocity is available, numerical modeling is a logical approach to estimate convection. Furthermore influence of microgravity level, double-diffusion and material properties should be taken into account. In the present study, HgCdTe is considered as a binary alloy with melting temperature available from a phase diagram. The numerical model of convection and solidification of binary alloy is based on the general equations of heat and mass transfer in two-dimensional region. Mathematical modeling of binary alloy solidification is still a challenging numericial problem. A Rigorous mathematical approach to this problem is available only when convection is not considered at all. The proposed numerical model was developed using the finite element code FIDAP. In the present study, the numerical model is used to consider thermal, solutal convection and a double diffusion source of mass transport.

  6. Competing mechanism driving diverse pressure dependence of thermal conductivity of X Te (X =Hg ,Cd , and Zn)

    NASA Astrophysics Data System (ADS)

    Ouyang, Tao; Hu, Ming

    2015-12-01

    Effectively engineering the lattice thermal conductivity of materials is a key interest of the current thermal science community. Pressure or compressive strain is one of the most worthwhile processes to modify the thermal transport property of materials, due to its robust tunability and flexibility of realization. While it is well documented in the literature that the application of hydrostatic pressure normally increases the thermal conductivity of bulk materials, little work has been performed on abnormal pressure-dependent thermal conductivity and the governing mechanism has not been fully understood yet. In this paper, taking bulk telluride systems X Te (X =Hg ,Cd ,Zn ) as examples, we show, by combining first-principle calculation and the phonon Boltzmann transport equation, that the thermal conductivity presents diverse pressure dependence although they belong to the same group. The thermal conductivity of ZnTe is independent of pressure, while abnormal negative pressure dependence of thermal conductivity is observed in HgTe. As for CdTe, the trend falls in between HgTe and ZnTe and relies largely on the temperature. By comparing the key contributors of the lattice thermal conductivity, we find that the diverse pressure dependence of the lattice thermal conductivity is governed by the competition between the enhancement of group velocity of longitudinal acoustic and optic modes and the reduction of phonon relaxation time of transverse acoustic modes, with both effects being fully quantified by our calculation. Comparison with traditional bulk systems such as silicon further underpins the governing mechanism. The correlation between the diverse thermal transport phenomena and the nature of the atomic bonding is also qualitatively established. These findings are expected to deepen our understanding of manipulating phonon transport of bulk materials via simple compressive strain and are also helpful for related applications, such as optimizing thermoelectric

  7. Local structure and site occupancy of Cd and Hg substitutions in CeTIn5 (T=Co, Rh, Ir)

    SciTech Connect

    Bauer, Eric D; Ronning, Filip; Thompson, J D; Sarrao, J L; Booth, C H; Bianchi, A D; Cho, J Y; Chan, J Y; Capan, C; Fisk, Z

    2009-01-01

    The CeTIn{sub 5} superconductors (T = Co, Rh, or Ir) have generated great interest due to their relatively high transition temperatures, non-Fermi liquid behavior, and their proximity to antiferromagnetic order and quantum critical points. In contrast to small changes with the T-species, electron doping in CeT(In{sub 1-x}M{sub x}){sub 5} with M = Sn and hole doping with Cd or Hg have a dramatic effect on the electronic properties at very low concentrations. The present work reports local structure measurements using the extended x-ray absorption fine-structure (EXAFS) technique that address the substituent atom distribution as a function of T, M, and x, in the vicinity of the superconducting phase. Together with previous measurements for M = Sn, the proportion of the M atom residing on the In(1) site, f{sub 1n(1)}, increases in the order M = Cd, Sn, and Hg, ranging from about 40% to 70%, showing a strong preference for each of these substituents to occupy the In(1) site (random occupation = 20%). In addition, f{sub In(1)} ranges from 70% to 100% for M = Hg in the order T = Co, Rh, and Ir. These fractions track the changes in the atomic radii of the various species, and help explain the sharp dependence of T{sub c} on substituting into the In site. However, it is difficult to reconcile the small concentrations of M with the dramatic changes in the ground state in the hole-doped materials with only an impurity scattering model. These results therefore indicate that while such substitutions have interesting local atomic structures with important electronic and magnetic consequences, other local changes in the electronic and magnetic structure are equally important in determining the bulk properties of these materials.

  8. Local structure and site occupancy of Cd and Hg substitutions in CeTIn_5 (T=Co, Rh, Ir)

    SciTech Connect

    Booth, Corwin H.; Bauer, Eric. D.; Bianchi, Andrea D.; Ronning, Fillip; Thompson, Joe D.; Sarrao, John L.; Cho, Jung Young; Chan, Julia Y.; Capan, Cigdem; Fisk, Zachary

    2009-04-22

    The CeTIn_5 superconductors (T=Co, Rh, or Ir) have generated great interest due to their relatively high transition temperatures, non-Fermi liquid behavior, and their proximity to antiferromagnetic order and quantum critical points. In contrast to small changes with the T-species, electron doping in CeT(In_1-x M_x)_5 with $M$=Sn and hole doping with Cd or Hg have a dramatic effect on the electronic properties at very low concentrations. The present work reports local structure measurements usingthe extended x-ray absorption fine-structure (EXAFS) technique that address the substituent atom distribution as a function of T, M, and x, in the vicinity of the superconducting phase. Together with previous measurements for M=Sn, the proportion of the $M$ atom residing on the In(1) site, f_\\textrm In(1), increases in the order M=Cd, Sn, and Hg, ranging from about 40\\percent to 70percent, showing a strong preference for each of these substituents to occupy the In(1) site (random occupation = 20percent). In addition, f_In(1) ranges from 70percent to 100percent for M=Hg in the order T=Co,Rh, and Ir. These fractions track the changes in the atomic radii of the various species, and help explain the sharp dependence of $T_c$ on substituting into the In site. However, it is difficult to reconcile the small concentrations of M with the dramatic changes in the ground state in the hole-doped materials with only an impurity scattering model. These results therefore indicate that while such substitutions have interesting local atomic structures with important electronic and magnetic consequences, other local changes in the electronic and magnetic structure are equally important in determining the bulk properties of these materials.

  9. Impact of Tellurium Precipitates in CdZnTe Substrates on MBE HgCdTe Deposition

    NASA Astrophysics Data System (ADS)

    Benson, J. D.; Bubulac, L. O.; Smith, P. J.; Jacobs, R. N.; Markunas, J. K.; Jaime-Vasquez, M.; Almeida, L. A.; Stoltz, A.; Wijewarnasuriya, P. S.; Brill, G.; Chen, Y.; Peterson, J.; Reddy, M.; Vilela, M. F.; Johnson, S. M.; Lofgreen, D. D.; Yulius, A.; Bostrup, G.; Carmody, M.; Lee, D.; Couture, S.

    2014-11-01

    State-of-the-art (112)B CdZnTe substrates were examined for near-surface tellurium precipitate-related defects. The Te precipitate density was observed to be fairly uniform throughout the bulk of the wafer, including the near-surface region. After a molecular beam epitaxy (MBE) preparation etch, exposed Te precipitates, small pits, and bumps on the (112)B surface of the CdZnTe wafer were observed. From near-infrared and dark field microscopy, the bumps and small pits on the CdZnTe surface are associated with strings of Te precipitates. Raised bumps are Te precipitates near the surface of the (112)B CdZnTe where the MBE preparation etch has not yet exposed the Te precipitate(s). An exposed Te precipitate sticking above the etched CdZnTe surface plane occurs when the MBE preparation etch rapidly undercuts a Te precipitate. Shallow surface pits are formed when the Te precipitate is completely undercut from the surrounding (112)B surface plane. The Te precipitate that was previously located at the center of the pit is liberated by the MBE preparation etch process.

  10. Synthesis, structure and optical properties of SnS2, CdS and HgS nanoparticles from thioacetate precursor

    NASA Astrophysics Data System (ADS)

    Hosny, Nasser Mohammed; Dahshan, A.

    2015-04-01

    Cd(II), Sn(II) and Hg(II) complexes of calcium thioacetate have been used as single source precursors to synthesize CdS, SnS2 and HgS nanoparticles by using self-propagating combustion method. The structures of the obtained metal sulfides have been characterized by XRD, SEM and TEM. The crystal structure has been solved from the powder diffraction. The crystal solutions indicated that SnS2 and HgS crystallize in cubic system with cell parameters a = 3.6710 and 5.8537 Å, respectively. CdS crystallizes in hexagonal system with a lattice constants, a = 4.136, b = 4.136 and c = 6.713 Å. The sizes of the prepared nanoparticles were estimated as 17, 25 and 24 nm for CdS, SnS2 and HgS samples, respectively. The optical band gap (Eg) measurements showed allowed direct electronic transitions for the photon absorption in the investigated samples. Eg values equal 2.77, 1.75 and 2.49 eV for CdS, SnS2 and HgS nanoparticles, respectively.

  11. Ion implantation of B ions into CdHgTe/CdZnTe substrate and determination of optimum optical characteristics for making diode p-n structures in narrow(-band)-gap semiconductor material CdHgTe/CdZnTe

    NASA Astrophysics Data System (ADS)

    Udovitska, Ruslana S.; Kalisty, Genadiy V.; Fedulov, Vladimir V.

    2008-02-01

    The samples were prepared from CdZnTe substrate with thickness of 600µm, on wich thin CdHgTe (KRT) thin films with thicknesses of 16µm, 18.75 µm and the same sample with KRT thin film with thickness 21.6µm was coated by diamond thin film with thickness of 30nm. B ion implantation into KRT film on CdZnTe substrate was made with purpose of investigation of volt-ampere characteristics and defects formation. Ion doping of B in KRT with doses of (D=3.4 mCl/cm2, D=6.8 mCl/cm2) and energies (50 keV, 100 keV, 150 keV). The calculations by SRIM-TRIM 2003 software for condition of maximum ion distribution on the interface "filmsubstrate" have shown that the optimal energy is 100 keV for all mentioned samples. The results also have shown that implantation at ions energy 100 keV is optimal for form diode p-n structures in narrow(-band)-gap semiconductor material CdHgTe/CdZnTe.

  12. Development of electrodeposited ZnTe layers as window materials in ZnTe/CdTe/CdHgTe multi-layer solar cells

    SciTech Connect

    Islam, A.B.M.O. Chaure, N.B.; Wellings, J.; Tolan, G.; Dharmadasa, I.M.

    2009-02-15

    Zinc telluride (ZnTe) thin films have been deposited on glass/conducting glass substrates using a low-cost electrodeposition method. The resulting films have been characterized using various techniques in order to optimize growth parameters. X-ray diffraction (XRD) has been used to identify the phases present in the films. Photoelectrochemical (PEC) cell and optical absorption measurements have been performed to determine the electrical conductivity type, and the bandgap of the layers, respectively. It has been confirmed by XRD measurement that the deposited layers mainly consist of ZnTe phases. The PEC measurements indicate that the ZnTe layers are p-type in electrical conduction and optical absorption measurements show that their bandgap is in the range 2.10-2.20 eV. p-Type ZnTe window materials have been used in CdTe based solar cell structures, following new designs of graded bandgap multi-layer solar cells. The structures of FTO/ZnTe/CdTe/metal and FTO/ZnTe/CdTe/CdHgTe/metal have been investigated. The results are presented in this paper using observed experimental data.

  13. Dielectric functions and carrier concentrations of Hg{sub 1−x}Cd{sub x}Se films determined by spectroscopic ellipsometry

    SciTech Connect

    Lee, A. J.; Peiris, F. C.; Brill, G.; Doyle, K.; Myers, T. H.

    2015-08-17

    Spectroscopic ellipsometry, ranging from 35 meV to 6 eV, was used to determine the dielectric functions of a series of molecular beam epitaxy-grown Hg{sub 1−x}Cd{sub x}Se thin films deposited on both ZnTe/Si(112) and GaSb(112) substrates. The fundamental band gap as well as two higher-order electronic transitions blue-shift with increasing Cd composition in Hg{sub 1−x}Cd{sub x}Se, as expected. Representing the free carrier absorption with a Drude oscillator, we found that the effective masses of Hg{sub 1−x}Cd{sub x}Se (grown on ZnTe/Si) vary between 0.028 and 0.050 times the free electron mass, calculated using the values of carrier concentration and the mobility obtained through Hall measurements. Using these effective masses, we determined the carrier concentrations of Hg{sub 1−x}Cd{sub x}Se samples grown on GaSb, which is of significance as films grown on such doped-substrates posit ambiguous results when measured by conventional Hall experiments. These models can serve as a basis for monitoring Cd-composition during sample growth through in-situ spectroscopic ellipsometry.

  14. Improved performance of HgCdTe infrared detector focal plane arrays by modulating light field based on photonic crystal structure

    SciTech Connect

    Liang, Jian; Hu, Weida Ye, Zhenhua; Li, Zhifeng; Chen, Xiaoshuang Lu, Wei; Liao, Lei

    2014-05-14

    An HgCdTe long-wavelength infrared focal plane array photodetector is proposed by modulating light distributions based on the photonic crystal. It is shown that a promising prospect of improving performance is better light harvest and dark current limitation. To optimize the photon field distributions of the HgCdTe-based photonic crystal structure, a numerical method is built by combining the finite-element modeling and the finite-difference time-domain simulation. The optical and electrical characteristics of designed HgCdTe mid-wavelength and long-wavelength photon-trapping infrared detector focal plane arrays are obtained numerically. The results indicate that the photon crystal structure, which is entirely compatible with the large infrared focal plane arrays, can significantly reduce the dark current without degrading the quantum efficiency compared to the regular mesa or planar structure.

  15. Novel signal inversion of laser beam induced current for femtosecond-laser-drilling-induced junction on vacancy-doped p-type HgCdTe

    SciTech Connect

    Qiu, W. C.; Wang, R.; Xu, Z. J.; Jiang, T.; Cheng, X. A.

    2014-05-28

    In this paper, experimental results of temperature-dependent signal inversion of laser beam induced current (LBIC) for femtosecond-laser-drilling-induced junction on vacancy-doped p-type HgCdTe are reported. LBIC characterization shows that the traps induced by femtosecond laser drilling are sensitive to temperature. Theoretical models for trap-related p-n junction transformation are proposed and demonstrated using numerical simulations. The simulations are in good agreement with the experimental results. The effects of traps and mixed conduction are possibly the main reasons that result in the novel signal inversion of LBIC microscope at room temperature. The research results provide a theoretical guide for practical applications of large-scale array HgCdTe infrared photovoltaic detectors formed by femtosecond laser drilling, which may act as a potential new method for fabricating HgCdTe photodiodes.

  16. Toxic metal (Pb, Cd, As and Hg) and organochlorine residue levels in hake (Merluccius merluccius) from the Marmara Sea, Turkey.

    PubMed

    Aksu, Abdullah; Balkis, Nuray; Taşkin, Omer S; Erşan, Mahmut S

    2011-11-01

    Toxic metals (Pb, Cd, As and Hg) and organochlorine residue levels were measured in hake (Merluccius merluccius) from the Marmara Sea. Biota samples were collected by a trawling cruise of the R/V ARAR in August and December 2009. The concentrations of toxic metals varied between Pb, 3.23-14.4; Cd, <0.01-2.14; Hg, 0.01-0.18 and As, 0.01-0.21 [Formula: see text]g g(-1) dry wt. Pb levels in the Marmara Sea were found to be higher than the critical limits set by the both Turkish Ministry of Environment for Aquatic Products (1 μg g(-1) wet wt.) and European countries (2.0 μg g(-1), UNEP 1985). In contrast, As and Hg levels were found to be lower than the critical limits for two periods. Cd contents of fish from the Marmara Sea were also comparable to or slightly lower than contents of fish from the Southern Black Sea Shelf. The results of organochlorine residues ranged between total HCH, <0.05 and 99 ng g(-1); endrin, <0.001 and 381 ng g(-1); alpha-endosulphan, <0.05 and 90 ng g(-1); beta-endosulphan, <0.05 and 15.3 ng g(-1); o,p DDE, 3.5 and 52.4 ng g(-1); p,p DDE, 7.4 and 139 ng g(-1); o,p DDD, 1.5 and 90.2 ng g(-1) and p,p DDD, 2.7 and 86 ng g(-1) wet weight. The rivers for the distribution of organochlorine levels in the Marmara Sea ordered from highest to lowest as Dil R. > Susurluk R. > Biga R. > Gönen R. The high levels of o,p and p,p DDE, and o,p and p,p DDD compounds, which are metabolites of DDT, indicate its illegal use. Toxic metal and organochlorine residue levels of fish are significantly higher than levels from the Mediterranean Sea. PMID:21336486

  17. Slurry sampling flow injection chemical vapor generation inductively coupled plasma mass spectrometry for the determination of As, Cd, and Hg in cereals.

    PubMed

    Chen, Feng-Yi; Jiang, Shiuh-Jen

    2009-08-12

    A slurry sampling inductively coupled plasma mass spectrometry (ICP-MS) method has been developed for the determination of As, Cd, and Hg in cereals using flow injection chemical vapor generation (VG) as the sample introduction system. A slurry containing 6% m/v flour, 0.7% m/v thiourea, 0.4 microg mL(-1) Co(II), and 2.5% v/v HCl was injected into a VG-ICP-MS system for the determination of As, Cd, and Hg without dissolution and mineralization. Because the sensitivities of the elements studied in the slurry and that of aqueous solution were quite different, a standard addition method and an isotope dilution method were used for the determination of As, Cd, and Hg in selected cereal samples. The influences of vapor generation conditions and slurry preparation on the ion signals were reported. The effectiveness of the vapor generation sample introduction technique in alleviating various spectral interferences in ICP-MS analysis has been demonstrated. This method has been applied for the determination of As, Cd, and Hg in NIST SRM 1567a Wheat Flour reference material, NIST SRM 1568a Rice Flour reference material, and cereal samples obtained from local market. The As, Cd, and Hg analysis results of the reference materials agreed with the certified values. The method detection limits estimated from standard addition curves were about 0.10, 0.16, and 0.07 ng g(-1) for As, Cd, and Hg, respectively, in the original cereal samples. PMID:19606866

  18. Polarity inversion and coupling of laser beam induced current in As-doped long-wavelength HgCdTe infrared detector pixel arrays: Experiment and simulation

    NASA Astrophysics Data System (ADS)

    Hu, W. D.; Chen, X. S.; Ye, Z. H.; Chen, Y. G.; Yin, F.; Zhang, B.; Lu, W.

    2012-10-01

    In this paper, experimental results of polarity inversion and coupling of laser beam induced current for As-doped long-wavelength HgCdTe pixel arrays grown on CdZnTe are reported. Models for the p-n junction transformation are proposed and demonstrated using numerical simulations. Simulation results are shown to be in agreement with the experimental results. It is found that the deep traps induced by ion implantation are very sensitive to temperature, resulting in a decrease of the quasi Fermi level in the implantation region in comparison to that in the Hg interstitials diffusion and As-doped regions. The Hg interstitial diffusion, As-doping amphoteric behavior, ion implantation damage traps, and the mixed conduction, are key factors for inducing the polarity reversion, coupling, and junction broadening at different temperatures. The results provide the near room-temperature HgCdTe photovoltaic detector with a reliable reference on the junction reversion and broadening around implanted regions, as well as controlling the n-on-p junction for very long wavelength HgCdTe infrared detector pixels.

  19. Defect chemistry and characterization of Hg(1-x)Cd(x)Te

    NASA Technical Reports Server (NTRS)

    Vydyanath, H. R.

    1981-01-01

    Undoped mercury cadmium telluride crystals were subjected to high temperature equilibration at temperatures ranging from 400 C to 655 C in various Hg atmospheres. Hall effect and mobility measurements were carried out on the crystals quenched to room temperature subsequent to the high temperature equilibration. The variation of the hole concentration in the cooled crystals at 77 K as a function of the partial pressure of Hg at the equlibration temperatures, together with a comparison of the hole mobility in the undoped samples with that in the copper and phosphorous doped samples yielded a defect model for the undoped crystals, according to which, the undoped crystals are essentially intrinsic at the equilibration temperatures and the native acceptor defects are doubly ionized. Native donor defects appear to be negligible in concentration, implying that the p to n conversion in these alloys is mainly due to residual foreign donor impurities. The thermodynamic constants for the intrinsic excitation process as well as for the incorporation of the doubly ionized native acceptor defects in the undoped crystals were obtained.

  20. Defect chemistry and characterization of Hg(1-x)Cd(x)Te

    NASA Astrophysics Data System (ADS)

    Vydyanath, H. R.

    Undoped mercury cadmium telluride crystals were subjected to high temperature equilibration at temperatures ranging from 400 C to 655 C in various Hg atmospheres. Hall effect and mobility measurements were carried out on the crystals quenched to room temperature subsequent to the high temperature equilibration. The variation of the hole concentration in the cooled crystals at 77 K as a function of the partial pressure of Hg at the equlibration temperatures, together with a comparison of the hole mobility in the undoped samples with that in the copper and phosphorous doped samples yielded a defect model for the undoped crystals, according to which, the undoped crystals are essentially intrinsic at the equilibration temperatures and the native acceptor defects are doubly ionized. Native donor defects appear to be negligible in concentration, implying that the p to n conversion in these alloys is mainly due to residual foreign donor impurities. The thermodynamic constants for the intrinsic excitation process as well as for the incorporation of the doubly ionized native acceptor defects in the undoped crystals were obtained.

  1. Thermal studies and vibrational analyses of m-methylaniline complexes of Zn(II), Cd(II) and Hg(II) bromides

    NASA Astrophysics Data System (ADS)

    Golcuk, K.; Altun, A.; Kumru, M.

    2003-06-01

    The complexes having the MBr2L2 (M: Zn, Cd and Hg; L: m-methylaniline) formulae have been prepared and characterized by their elemental analyses, thermogravimetric analyses, IR and Raman spectral studies. IR and Raman bands of the complexes have been assigned as compared with the free ligand. Coordination effects on the internal modes of m-methylaniline have been discussed. Vibrational spectra propose that the [ZnBr2(mMA)2] complex is in a tetrahedral environment around Zn(II) ion with C2v symmetry whereas Cd(II) and Hg(II) complexes have 5-coordinate polymeric bromide bridged structures.

  2. Numerical simulation of quantum efficiency and surface recombination in HgCdTe IR photon-trapping structures

    NASA Astrophysics Data System (ADS)

    Schuster, Jonathan; Bellotti, Enrico

    2013-06-01

    We have investigated the quantum effiency in HgCdTe photovoltaic pixel arrays employing a photon-trapping structure realized with a periodic array of pillars intended to provide broadband operation. We have found that the quantum efficiency depends heavily on the passivation of the pillar surface. Pillars passivated with anodicoxide have a large fixed positive charge on the pillar surface. We use our three-dimensional numerical simulation model to study the effect of surface charge and surface recombination velocity on the exterior of the pillars. We then evaluate the quantum efficiency of this structure subject to different surface conditions. We have found that by themselves, the surface charge and surface recombination are detrimental to the quantum efficiency but the quantum efficiency is recovered when both phenomena are present. We will discuss the effects of these phenomena and the trade offs that exist between the two.

  3. Dynamic conductivity of the bulk states of n-type HgTe/CdTe quantum well topological insulator

    SciTech Connect

    Chen, Qinjun; Sanderson, Matthew; Cao, J. C.; Zhang, Chao

    2014-11-17

    We theoretically studied the frequency-dependent current response of the bulk state of topological insulator HgTe/CdTe quantum well. The optical conductivity is mainly due to the inter-band process at high frequencies. At low frequencies, intra-band process dominates with a dramatic drop to near zero before the inter-band contribution takes over. The conductivity decreases with temperature at low temperature and increases with temperature at high temperature. The transport scattering rate has an opposite frequency dependence in the low and high temperature regime. The different frequency dependence is due to the interplay of the carrier-impurity scattering and carrier population near the Fermi surface.

  4. Magneto-Hydrodynamic Damping of Convection During Vertical Bridgman-Stockbarger Growth of HgCdTe

    NASA Technical Reports Server (NTRS)

    Watring, D. A.; Lehoczky, S. L.

    1996-01-01

    In order to quantify the effects of convection on segregation, Hg(0.8)Cd(0.2)Te crystals were grown by the vertical Bridgman-Stockbarger method in the presence of an applied axial magnetic field of 50 kG. The influence of convection, by magneto-hydrodynamic damping, on mass transfer in the melt and segregation at the solid-liquid interface was investigated by measuring the axial and radial compositional variations in the grown samples. The reduction of convective mixing in the melt through the application of the magnetic field is found to decrease radial segregation to the diffusion-limited regime. It was also found that the suppression of the convective cell near the solid-liquid interface results in an increase in the slope of the diffusion-controlled solute boundary layer, which can lead to constitutional supercooling.

  5. Analysis of damage threshold on HgCdTe crystal irradiated by multi-pulsed CO2 laser

    NASA Astrophysics Data System (ADS)

    Tang, Wei; Guo, Jin; Shao, Junfeng; Wang, Tingfeng

    2014-06-01

    Damage threshold for the onset of surface melting was investigated theoretically and experimentally on HgCdTe crystal irradiated by multi-pulsed CO2 laser. The impact of repetition frequency and irradiation time on damage threshold was analyzed and damage morphology of the crystal was observed by scanning electron microscope (SEM). Thermal accumulate effect is obvious, and damage threshold gradually reduces with the increase of irradiation time and does not depend on laser repetition frequency. Damage threshold calculated by thermal model is in good agreement with the experimental data. Melting and solidification phenomenon were evident on the crystal surface, and the obvious crack which was caused by thermal stress was not found. Theoretical model gives a reasonable explanation on surface morphology changes.

  6. Comparing FDTD and Ray-Tracing Models in Numerical Simulation of HgCdTe LWIR Photodetectors

    NASA Astrophysics Data System (ADS)

    Vallone, Marco; Goano, Michele; Bertazzi, Francesco; Ghione, Giovanni; Schirmacher, Wilhelm; Hanna, Stefan; Figgemeier, Heinrich

    2016-04-01

    We present a simulation study of HgCdTe-based long-wavelength infrared detectors, focusing on methodological comparisons between the finite-difference time-domain (FDTD) and ray-tracing optical models. We performed three-dimensional simulations to determine the absorbed photon density distributions and the corresponding photocurrent and quantum efficiency spectra of isolated n-on-p uniform-composition pixels, systematically comparing the results obtained with FDTD and ray tracing. Since ray tracing is a classical optics approach, unable to describe interference effects, its applicability has been found to be strongly wavelength dependent, especially when reflections from metallic layers are relevant. Interesting cavity effects around the material cutoff wavelength are described, and the cases where ray tracing can be considered a viable approximation are discussed.

  7. Large area space qualified thermoelectrically (TE) cooled HgCdTe MW photovoltaic detectors for the Halogen Occultation Experiment (HALOE)

    NASA Technical Reports Server (NTRS)

    Norton, P. W.; Zimmermann, P. H.; Briggs, R. J.; Hartle, N. M.

    1986-01-01

    Large-area, HgCdTe MW photovoltaic detectors have been developed for the NASA-HALOE instrument scheduled for operation on the Upper Atmospheric Research Satellite. The photodiodes will be TE-cooled and were designed to operate in the 5.1-5.4 micron band at 185 K to measure nitric oxide concentrations in the atmosphere. The active area required 15 micron thick devices and a full backside common contact. Reflections from the backside contact doubled the effective thickness of the detectors. Optical interference from reflections was eliminated with a dual layer front surface A/R coating. Bakeout reliability was optimized by having Au metallization for both n and p interconnects. Detailed performance data and a model for the optical stack are presented.

  8. Dynamic conductivity of the bulk states of n-type HgTe/CdTe quantum well topological insulator

    NASA Astrophysics Data System (ADS)

    Chen, Qinjun; Sanderson, Matthew; Cao, J. C.; Zhang, Chao

    2014-11-01

    We theoretically studied the frequency-dependent current response of the bulk state of topological insulator HgTe/CdTe quantum well. The optical conductivity is mainly due to the inter-band process at high frequencies. At low frequencies, intra-band process dominates with a dramatic drop to near zero before the inter-band contribution takes over. The conductivity decreases with temperature at low temperature and increases with temperature at high temperature. The transport scattering rate has an opposite frequency dependence in the low and high temperature regime. The different frequency dependence is due to the interplay of the carrier-impurity scattering and carrier population near the Fermi surface.

  9. Structure and properties of Cd{sub x}Hg{sub 1-x}Te-metal contacts

    SciTech Connect

    Stafeev, V. I.

    2009-05-15

    A metal-semiconductor contact is a composite structure consisting of several nanodimensional layers. The contact properties depend strongly on the technique of metal deposition. A metal forms chemical compounds with the components of Cd{sub x}Hg{sub 1-x}Te (CMT), thus changing the properties of the surface layer. Mercury is accumulated at the interface with the metal, while tellurium is accumulated on the metal surface. The CMT compounds with metals, heats of their formation, and the Fermi level shifts are reported. The structure and properties of the interfaces between CMT and gold, silver, indium, aluminum, copper, and other metals, as well as the effect of sublayers of other metals and insulators, are described.

  10. High resolution imaging of the Venus night side using a Rockwell 128x128 HgCdTe array

    NASA Technical Reports Server (NTRS)

    Hodapp, K.-W.; Sinton, W.; Ragent, B.; Allen, D.

    1989-01-01

    The University of Hawaii operates an infrared camera with a 128x128 HgCdTe detector array on loan from JPL's High Resolution Imaging Spectrometer (HIRIS) project. The characteristics of this camera system are discussed. The infrared camera was used to obtain images of the night side of Venus prior to and after inferior conjunction in 1988. The images confirm Allen and Crawford's (1984) discovery of bright features on the dark hemisphere of Venus visible in the H and K bands. Our images of these features are the best obtained to date. Researchers derive a pseudo rotation period of 6.5 days for these features and 1.74 microns brightness temperatures between 425 K and 480 K. The features are produced by nonuniform absorption in the middle cloud layer (47 to 57 Km altitude) of thermal radiation from the lower Venus atmosphere (20 to 30 Km altitude). A more detailed analysis of the data is in progress.

  11. Optical and Electrical Studies of the Double Acceptor Levels of the Mercury Vacancies in HgCdTe

    NASA Astrophysics Data System (ADS)

    Gemain, F.; Robin, I. C.; Brochen, S.; De Vita, M.; Gravrand, O.; Lusson, A.

    2012-10-01

    Correlations between photoluminescence and temperature-dependent Hall measurements were carried out on unintentionally doped HgCdTe epilayers with cadmium composition of 32.7%. These films were grown by liquid-phase epitaxy and post-annealed under different conditions as follows: a p-type annealing was used to control the mercury vacancy concentration, and an n-type annealing under saturated mercury atmosphere was used to fill the mercury vacancies. Comparison of the results obtained by these two characterization techniques allowed us to identify the two acceptor energy levels of the mercury vacancy. Moreover, the "U-negativity" of the vacancy was evidenced: the ionized state V- is stabilized under the neutral state V0 by the dominance of the Jahn-Teller effect over Coulombic repulsion. Finally, three epilayers with different cadmium compositions were also characterized to complete this study.

  12. Defect study in molecular beam epitaxy-grown HgCdTe films with activated and unactivated arsenic

    SciTech Connect

    Izhnin, I. I.; Dvoretsky, S. A.; Mikhailov, N. N.; Varavin, V. S.; Mynbaev, K. D.; Fitsych, O. I.; Pociask-Bialy, M.; Sheregii, E.; Voitsekhovskii, A. V.

    2014-04-28

    A defect study was performed on molecular beam epitaxy-grown HgCdTe films in situ doped with arsenic. Doping was performed from either effusion cell or cracker cell, and studied were both as-grown samples and samples subjected to arsenic activation annealing. Electrical properties of the films were investigated with the use of ion milling as a means of “stirring” defects in the material. As a result of the study, it was confirmed that the most efficient incorporation of electrically active arsenic occurs at the cracking zone temperature of 700 °C. Interaction between arsenic and tellurium during the growth was observed and is discussed in the paper.

  13. Comparing FDTD and Ray-Tracing Models in Numerical Simulation of HgCdTe LWIR Photodetectors

    NASA Astrophysics Data System (ADS)

    Vallone, Marco; Goano, Michele; Bertazzi, Francesco; Ghione, Giovanni; Schirmacher, Wilhelm; Hanna, Stefan; Figgemeier, Heinrich

    2016-09-01

    We present a simulation study of HgCdTe-based long-wavelength infrared detectors, focusing on methodological comparisons between the finite-difference time-domain (FDTD) and ray-tracing optical models. We performed three-dimensional simulations to determine the absorbed photon density distributions and the corresponding photocurrent and quantum efficiency spectra of isolated n-on- p uniform-composition pixels, systematically comparing the results obtained with FDTD and ray tracing. Since ray tracing is a classical optics approach, unable to describe interference effects, its applicability has been found to be strongly wavelength dependent, especially when reflections from metallic layers are relevant. Interesting cavity effects around the material cutoff wavelength are described, and the cases where ray tracing can be considered a viable approximation are discussed.

  14. Evaluation of Quantum Efficiency, Crosstalk, and Surface Recombination in HgCdTe Photon-Trapping Structures

    NASA Astrophysics Data System (ADS)

    Schuster, Jonathan; Bellotti, Enrico

    2014-08-01

    The quantum efficiency (QE) in HgCdTe photovoltaic pixel arrays employing a photon-trapping (PT) structure realized with a periodic array of pillars intended to provide broadband operation was investigated. It was found that the QE depends heavily on the passivation of the pillar surface. This is due to the presence of large fixed positive charge on the surface of pillars passivated with anodic oxide. A three-dimensional numerical simulation model was used to study the effect of the surface charge density and surface recombination velocity on the exterior of the pillars. Then, the QE of this structure was evaluated subject to different surface conditions. It was found that alone the surface charge density or surface recombination is detrimental to the QE but that the QE is recovered when both phenomena are present. Subsequently, the crosstalk was analyzed and the superior performance of the PT structure was demonstrated by evaluating the modulation transfer function.

  15. Vibrational Spectroscopic Investigation on Some M(Benzonitrile)2Ni(CN)4 Complexes (M = Ni, Zn, Cd, and Hg)

    NASA Astrophysics Data System (ADS)

    Kartal, Zeki

    2012-04-01

    The first synthesis of benzonitrile tetracyanonickelate complexes, represented by the general formula M(benzonitrile)2Ni(CN)4 (M = Ni, Zn, Cd, and Hg), is reported. Fourier transform infrared spectroscopy and Raman spectroscopic data in the region of 4,000-400 cm - 1 are presented, and the vibrational frequencies are assigned and explained in detail. The thermal behavior of these complexes was also investigated by thermogravimetric analysis, differential thermal analysis, and derivative thermal gravimetric analysis. The spectral and thermal analysis results of the newly synthesized complexes suggest that these complexes are new examples of Hofmann-type complexes. The spectral data obtained show that the complexes consist of |M-Ni(CN)4|∞ polymeric layers with the ligand (benzonitrile) molecules bound to metal through the N-donor atom of the cyanide group.

  16. The growth and characterization of (211) and (133) Oriented (Hg,Cd)Te epilayers (211)B GaAs by organometallic vapor phase epitaxy

    NASA Astrophysics Data System (ADS)

    Gouws, G. J.; Muller, R. J.

    1995-09-01

    The growth of CdTe buffer layers on (211)B GaAs substrates by organometallic vapor phase epitaxy (OMVPE) was studied, and it was found that, depending on the growth conditions, either the (211) or (133) epitaxial orientation could be formed. In some cases, an epilayer showing a mixed (211) and (133) orientation was also observed. The influence of several growth parameters on the orientation of the CdTe layer was investigated, and it was found that the Te/Cd ratio, together with the growth temperature, have the most significant effect in determining the epilayer orientation. From these results, it was then possible to select nominally optimized growth conditions for CdTe buffer layers of both orientations. (Hg,Cd)Te layers of the same orientations could then be grown and characterized. Although double crystal x-ray diffraction measurements indicated a somewhat better crystalline perfection in the (133) (Hg,Cd)Te layers, these layers showed a poor surface morphology compared to the (211) orientation. Measurement of etch pit densities also indicated defect densities to be typically half an order of magnitude higher in the (133) orientation. Diodes were formed by ion implantation in both orientations and significantly better results were obtained on the (211) (Hg,Cd)Te layers.

  17. Effect of Pb, Cd, Hg, As, and Cr on germination and root growth of Sinapis alba seeds

    SciTech Connect

    Fargasova, A. )

    1994-03-01

    Heavy metals have been widely recognized as highly toxic and dangerous. Plants, algae and bacteria respond to heavy metal toxicity by inducing different enzymes, creating ion influx/efflux for ionic balance and synthesizing small peptides. These peptides bind metal ions and reduce toxicity. Metals come from the natural weathering processes of the earth's crust, industrial discharge, pest or disease control agents applied to plants, urban run-off, mining, soil erosion, sewage effluents, air pollution fallout and other sources. Plants can be affected directly by air pollutants, as well as indirectly through the contamination of soil and water. At the same time, plant is a member of the food chain and may create a risk for man and animals through contamination of food supplies. In recent years a considerable progress has been made in the assay of trace elements in environmental plant samples. For higher plants, the accumulation of metals, especially cadmium, was tested when plants grew on sewage sludge-amended soils or in soils of cadmium residues from phosphate fertilizers. No reports were accessible to us on the direct effect of tested metals (Pb, Hg, Cr, As, Cd) on seed germination and root growth. The paucity of literature initiated our present work. In this study, an attempt has been made to investigate the acute toxicity of five metals (Cr[sup 6+], Cd[sup 2+], Hg[sup 2+], Pb[sup 2+], As[sup 5+]) which are widely spread in the environment and are widely recognized as highly toxic and dangerous. As the testing subject, mustard seeds (Sinapis alba) were used and their germination and root growth were observed. 12 refs., 1 tab.

  18. Fabrication and testing of MEMS-based optical filter combined with a HgCdTe detector

    NASA Astrophysics Data System (ADS)

    Kozak, Dmitry A.; Fernandez, Bautista; Morley, Michael L.; Velicu, Silviu; Kubby, Joel

    2011-03-01

    The Mid-wave infrared (MWIR) spectrum has applications to many fields, from night vision to chemical and biological sensors. Existing broadband detector technology based on HgCdTe allows for high sensitivity and wide range, but lacks the spectral decomposition necessary for many applications. Combining this detector technology with a tunable optical filter has been sought after, but few commercial realizations have been developed. MEMS-based optical filters have been identified as promising for their small size, light-weight, scalability and robustness of operation. In particular, Fabry-Perot interferometers with dielectric Bragg stacks used as reflective surfaces have been investigated. The integration of a detector and a filter in a device that would be compact, light-weight, inexpensive to produce and scaled for the entire range of applications could provide spectrally resolved detection in the MWIR for multiple instruments. We present a fabrication method for the optical components of such a filter. The emphasis was placed on wafer-scale fabrication with IC-compatible methods. Single, double and triple Bragg stacks composed of germanium and silicon oxide quarter-wavelength layers were designed for MWIR devices centered around 4 microns and have been fabricated on Silicon-On-Insulator (SOI) wafers, with and without anti-reflective half-wavelength silicon nitride layers. Optical testing in the MWIR and comparison of these measurements to theory and simulations are presented. The effect of film stress induced by deposition of these dielectric layers on the mechanical performance of the device is investigated. An optimal SOI substrate for the mechanical performance is determined. The fabrication flow for the optical MEMS component is also determined. Part of this work investigates device geometry and fabrication methods for scalable integration with HgCdTe detector and IC circuitry.

  19. The vertical photoconductor: A novel device structure suitable for HgCdTe two-dimensional infrared focal plane arrays

    NASA Astrophysics Data System (ADS)

    Siliquini, J. F.; Faraone, L.

    1997-06-01

    A novel photoconductive device structure is proposed and described that has been designed specifically as a sensing element for high density two-dimensional infrared focal plane array (IRFPA) applications. Although the design concept can be applied to a variety of epitaxially grown HgCdTe material, optimum performance can be achieved using n-type HgCdTe semiconductor material consisting of epitaxially grown heterostructure layers in which a two-dimensional mosaic of vertical design photoconductors are fabricated. The heterostructure layers provide high performance devices at greatly reduced power dissipation levels, while the vertical design allows for the high density integration of photoconductors in a two-dimensional array geometry with high fill factor. The salient feature of the proposed device structure is that the bias field is applied in the vertical direction such that it is parallel to the impinging infrared radiation. A comprehensive one-dimensional model is presented for the vertical design photoconductor, which is subsequently used to determine the optimum design parameters in order to achieve maximum responsivity at the lowest possible power dissipation level. It is found that the proposed device structure has the potential to be used in the fabrication of long wavelength IRFPAs approaching 10 6 pixels using 25 × 25 μm 2 detector elements. Furthermore, this is achieved with individual device detectivities that are background limited and for a total array power dissipation of less than 0.1 W using a pulsed biasing scheme. Performance issues such as response uniformity, pixel yield, fill factor, crosstalk, power dissipation, detector impedance, array architecture, and maximum array size are discussed in relation to the suitability of the proposed vertical photoconductor structure for use in IRFPA modules. When considering IRFPA operability, it is found that in many cases the proposed technology has the potential to deliver significant advantages, such

  20. Large-scale numerical simulation of reduced-pitch HgCdTe infrared detector arrays

    NASA Astrophysics Data System (ADS)

    Pinkie, Benjamin; Bellotti, Enrico

    2013-06-01

    Numerical simulations play an important role in the development of large-format infrared detector array tech- nologies, especially when considering devices whose sizes are comparable to the wavelength of the radiation they are detecting. Computational models can be used to predict the optical and electrical response of such devices and evaluate designs prior to fabrication. We have developed a simulation framework which solves Maxwell's equations to determine the electromagnetic properties of a detector and subsequently uses a drift-diffusion ap- proach to asses the electrical response. We apply these techniques to gauge the effects of cathode placement on the inter- and intra-pixel attributes of compositionally graded and constant Hg1-xCdxTe mid-wavelength infrared detectors. In particular, the quantum efficiency, nearest-neighbor crosstalk, and modulation transfer function are evaluated for several device architectures.

  1. Optically pumped laser oscillation at about 2.9 microns of a HgCdTe layer grown by metalorganic chemical vapor deposition

    NASA Astrophysics Data System (ADS)

    Ravid, A.; Zussman, A.; Cinader, G.; Oron, A.

    1989-12-01

    Photopumped pulsed stimulated emission at 2.9 microns in an HgCdTe layer grown by metalorganic chemical vapor deposition on a CdTe substrate was studied as a function of temperature. The threshold power of the HgCdTe laser (photoexcited by a GaAs diode laser) increased from 0.04 W at 12 K to 1.58 W at 150 K. Above 50 K, the temperature dependence of the threshold is exponential, yielding a T0 of 31 K. From the observed laser emission wavelength a Cd mole fraction of x = 0.422 was determined. The far-field angular full width at e exp -2 of peak intensity was 5.5 and 9.5 deg perpendicular and parallel to the film plane, respectively.

  2. Correlation Between Bands Structure and Magneto-Transport Properties in n-type HgTe/CdTe Superlattice with Relatively Thin CdTe Barrier

    SciTech Connect

    Braigue, M.; Nafidi, A.; Chaib, H.; Tirbiyine, A.; Hemine, J.; Idbaha, A.; Boulkassim, A.; El Gouti, T.; Massaq, M.; Talwar, Devki N.; SrinivasaVinod, M.

    2011-12-26

    Theoretical calculations of the electronic properties of n-type HgTe/CdTe superlattices (SLs) in the envelope function formalism have provided a reasonable agreement with the experimental data on the magneto-transport behavior. Numerical results of the band energies E(d{sub 2}), E(k{sub z}) and E(k{sub p}) in the direction of growth and in plane of the SLs predict that the system retains semiconductor characteristics for d{sub 1}/d{sub 2} = 2.69 and d{sub 2}<10 nm. For d{sub 2} = 3.2 nm the calculated effective band gap (E{sub g}({Gamma},4.2 K) = 48 meV) suggests that the material sample is a two-dimensional modulated nanostructure and a potential candidate to be used for the far infrared detection applications.

  3. Approaching the N=82 shell closure with mass measurements of Ag and Cd isotopes

    SciTech Connect

    Breitenfeldt, M.; Baruah, S.; Rosenbusch, M.; Schweikhard, L.; Borgmann, Ch.; Boehm, Ch.; George, S.; Audi, G.; Lunney, D.; Minaya-Ramirez, E.; Naimi, S.; Beck, D.; Dworschak, M.; Herfurth, F.; Savreux, R.; Yazidjian, C.; Blaum, K.; Cakirli, R. B.; Casten, R. F.; Delahaye, P.

    2010-03-15

    Mass measurements of neutron-rich Cd and Ag isotopes were performed with the Penning trap mass spectrometer ISOLTRAP. The masses of {sup 112,114-124}Ag and {sup 114,120,122-124,126,128}Cd, determined with relative uncertainties between 2x10{sup -8} and 2x10{sup -7}, resulted in significant corrections and improvements of the mass surface. In particular, the mass of {sup 124}Ag was previously unknown. In addition, other masses that had to be inferred from Q values of nuclear decays and reactions have now been measured directly. The analysis includes various mass differences, namely the two-neutron separation energies, the applicability of the Garvey-Kelson relations, double differences of masses deltaV{sub pn}, which give empirical proton-neutron interaction strengths, as well as a comparison with recent microscopic calculations. The deltaV{sub pn} results reveal that for even-even nuclides around {sup 132}Sn the trends are similar to those in the {sup 208}Pb region.

  4. MBE growth of HgCdTe avalanche photodiode structures for low-noise 1.55 μm photodetection

    NASA Astrophysics Data System (ADS)

    de Lyon, T. J.; Baumgratz, B.; Chapman, G.; Gordon, E.; Hunter, A. T.; Jack, M.; Jensen, J. E.; Johnson, W.; Johs, B.; Kosai, K.; Larsen, W.; Olson, G. L.; Sen, M.; Walker, B.; Wu, O. K.

    1999-05-01

    Molecular-beam epitaxy (MBE) has been utilized to fabricate HgCdTe heterostructure separate absorption and multiplication avalanche photodiodes (SAM-APD) sensitive to infrared radiation in the 1.1-1.6 μm spectral range, as an alternative technology to existing III-V APD detectors. Device structures were grown on CdZnTe(211)B substrates using CdTe, Te, and Hg sources with in situ In and As doping. The composition of the HgCdTe alloy layers was adjusted to achieve both efficient absorption of IR radiation in the 1.1-1.6 μm spectral range and low excess-noise avalanche multiplication. The Hg 1- xCd xTe alloy composition in the gain region of the device, x=0.73, was selected to achieve equality between the bandgap energy and spin-orbit splitting to resonantly enhance the impact ionization of holes in the split-off valence band. The appropriate value of this alloy composition was determined from analysis of the 300 K bandgap and spin-orbit splitting energies of a set of calibration layers, using a combination of IR transmission and spectroscopic ellipsometry measurements. MBE-grown APD epitaxial wafers were processed into passivated mesa-type discrete device structures and diode mini-arrays using conventional HgCdTe process technology. Device spectral response, dark current density, and avalanche gain measurements were performed on the processed wafers. Avalanche gains in the range of 30-40 at reverse bias of 85-90 V and array-median dark current density below 2×10 -4 A/cm 2 at 40 V reverse bias have been demonstrated.

  5. β-CD Dimer-immobilized Ag Assembly Embedded Silica Nanoparticles for Sensitive Detection of Polycyclic Aromatic Hydrocarbons

    NASA Astrophysics Data System (ADS)

    Hahm, Eunil; Jeong, Daham; Cha, Myeong Geun; Choi, Jae Min; Pham, Xuan-Hung; Kim, Hyung-Mo; Kim, Hwanhee; Lee, Yoon-Sik; Jeong, Dae Hong; Jung, Seunho; Jun, Bong-Hyun

    2016-05-01

    We designed a β-CD dimer on silver nanoparticles embedded with silica nanoparticles (Ag@SiO2 NPs) structure to detect polycyclic aromatic hydrocarbons (PAHs). Silica NPs were utilized as a template for embedding silver NPs to create hot spot structures and enhance the surface-enhanced Raman scattering (SERS) signal, and a thioether-bridged dimeric β-CD was immobilized on Ag NPs to capture PAHs. The assembled Ag NPs on silica NPs were confirmed by TEM and the presence of β-CD dimer on Ag@SiO2 was confirmed by UV-vis and attenuated total reflection-Fourier transform infrared spectroscopy. The β-CD dimer@Ag@SiO2 NPs were used as SERS substrate for detecting perylene, a PAH, directly and in a wide linearity range of 10‑7 M to 10‑2 M with a low detection limit of 10‑8 M. Also, the β-CD dimer@Ag@SiO2 NPs exhibited 1000-fold greater sensitivity than Ag@SiO2 NPs in terms of their perylene detection limit. Furthermore, we demonstrated the possibility of detecting various PAH compounds using the β-CD dimer@Ag@SiO2 NPs as a multiplex detection tool. Various PAH compounds with the NPs exhibited their distinct SERS bands by the ratio of each PAHs. This approach of utilizing the assembled structure and the ligands to recognize target has potential for use in sensitive analytical sensors.

  6. β-CD Dimer-immobilized Ag Assembly Embedded Silica Nanoparticles for Sensitive Detection of Polycyclic Aromatic Hydrocarbons.

    PubMed

    Hahm, Eunil; Jeong, Daham; Cha, Myeong Geun; Choi, Jae Min; Pham, Xuan-Hung; Kim, Hyung-Mo; Kim, Hwanhee; Lee, Yoon-Sik; Jeong, Dae Hong; Jung, Seunho; Jun, Bong-Hyun

    2016-01-01

    We designed a β-CD dimer on silver nanoparticles embedded with silica nanoparticles (Ag@SiO2 NPs) structure to detect polycyclic aromatic hydrocarbons (PAHs). Silica NPs were utilized as a template for embedding silver NPs to create hot spot structures and enhance the surface-enhanced Raman scattering (SERS) signal, and a thioether-bridged dimeric β-CD was immobilized on Ag NPs to capture PAHs. The assembled Ag NPs on silica NPs were confirmed by TEM and the presence of β-CD dimer on Ag@SiO2 was confirmed by UV-vis and attenuated total reflection-Fourier transform infrared spectroscopy. The β-CD dimer@Ag@SiO2 NPs were used as SERS substrate for detecting perylene, a PAH, directly and in a wide linearity range of 10(-7) M to 10(-2) M with a low detection limit of 10(-8) M. Also, the β-CD dimer@Ag@SiO2 NPs exhibited 1000-fold greater sensitivity than Ag@SiO2 NPs in terms of their perylene detection limit. Furthermore, we demonstrated the possibility of detecting various PAH compounds using the β-CD dimer@Ag@SiO2 NPs as a multiplex detection tool. Various PAH compounds with the NPs exhibited their distinct SERS bands by the ratio of each PAHs. This approach of utilizing the assembled structure and the ligands to recognize target has potential for use in sensitive analytical sensors. PMID:27184729

  7. β-CD Dimer-immobilized Ag Assembly Embedded Silica Nanoparticles for Sensitive Detection of Polycyclic Aromatic Hydrocarbons

    PubMed Central

    Hahm, Eunil; Jeong, Daham; Cha, Myeong Geun; Choi, Jae Min; Pham, Xuan-Hung; Kim, Hyung-Mo; Kim, Hwanhee; Lee, Yoon-Sik; Jeong, Dae Hong; Jung, Seunho; Jun, Bong-Hyun

    2016-01-01

    We designed a β-CD dimer on silver nanoparticles embedded with silica nanoparticles (Ag@SiO2 NPs) structure to detect polycyclic aromatic hydrocarbons (PAHs). Silica NPs were utilized as a template for embedding silver NPs to create hot spot structures and enhance the surface-enhanced Raman scattering (SERS) signal, and a thioether-bridged dimeric β-CD was immobilized on Ag NPs to capture PAHs. The assembled Ag NPs on silica NPs were confirmed by TEM and the presence of β-CD dimer on Ag@SiO2 was confirmed by UV-vis and attenuated total reflection-Fourier transform infrared spectroscopy. The β-CD dimer@Ag@SiO2 NPs were used as SERS substrate for detecting perylene, a PAH, directly and in a wide linearity range of 10−7 M to 10−2 M with a low detection limit of 10−8 M. Also, the β-CD dimer@Ag@SiO2 NPs exhibited 1000-fold greater sensitivity than Ag@SiO2 NPs in terms of their perylene detection limit. Furthermore, we demonstrated the possibility of detecting various PAH compounds using the β-CD dimer@Ag@SiO2 NPs as a multiplex detection tool. Various PAH compounds with the NPs exhibited their distinct SERS bands by the ratio of each PAHs. This approach of utilizing the assembled structure and the ligands to recognize target has potential for use in sensitive analytical sensors. PMID:27184729

  8. Metal-Semiconductor Hybrid Aerogels: Evolution of Optoelectronic Properties in a Low-Dimensional CdSe/Ag Nanoparticle Assembly.

    PubMed

    Nahar, Lamia; Esteves, Richard J Alan; Hafiz, Shopan; Özgür, Ümit; Arachchige, Indika U

    2015-10-27

    Hybrid nanomaterials composed of metal-semiconductor components exhibit unique properties in comparison to their individual counterparts, making them of great interest for optoelectronic applications. Theoretical and experimental studies suggest that interfacial interactions of individual components are of paramount importance to produce hybrid electronic states. The direct cross-linking of nanoparticles (NPs) via controlled removal of the surfactant ligands provides a route to tune interfacial interactions in a manner that has not been thoroughly investigated. Herein, we report the synthesis of CdSe/Ag heteronanostructures (aerogels) via oxidation induced self-assembly of thiol-coated NPs and the evolution of optical properties as a function of composition. Three hybrid systems were investigated, where the first and second excitonic energies of CdSe were matched with plasmonic energy of Au or Ag NPs and Ag hollow NPs. Physical characterization of the aerogels suggests the presence of an interconnected network of hexagonal CdSe and cubic Ag NPs. The optical properties of hybrids were systematically examined through UV-vis, photoluminescence (PL), and time-resolved (TR) PL spectroscopic studies that indicate the generation of alternate radiative decay pathways. A new emission (640 nm) from CdSe/Ag aerogels emerged at Ag loading as low as 0.27%, whereas absorption band tailing and PL quenching effects were observed at higher Ag and Au loading, respectively. The TRPL decay time of the new emission (∼600 ns) is markedly different from those of the band-edge (1.83 ± 0.03 ns) and trap-state (1190 ± 120 ns) emission maxima of phase pure CdSe, supporting the existence of alternate radiative relaxation pathways in sol-gel derived CdSe/Ag hybrids. PMID:26389642

  9. Numerical Simulation of Refractive-Microlensed HgCdTe Infrared Focal Plane Arrays Operating in Optical Systems

    NASA Astrophysics Data System (ADS)

    Li, Yang; Ye, Zhen-Hua; Hu, Wei-Da; Lei, Wen; Gao, Yan-Lin; He, Kai; Hua, Hua; Zhang, Peng; Chen, Yi-Yu; Lin, Chun; Hu, Xiao-Ning; Ding, Rui-Jun; He, Li

    2014-08-01

    The optoelectronic performance of the mid-wavelength HgCdTe infrared focal plane array (IRFPA) with refractive microlenses integrated on its CdZnTe substrate has been numerically simulated. A reduced light-distribution model based on scalar Kirchhoff diffraction theory was adopted to reveal the true behavior of IRFPAs operating in an optical system under imaging conditions. The pixel crosstalk obtained and the energy-gathering characteristics demonstrated that the microlenses can delay the rise in crosstalk when the image point shifts toward pixel boundaries, and can restrict the major optical absorption process in any case within a narrow region around the pixel center. The dependence of the microlenses' effects on the system's properties was also analyzed; this showed that intermediate relative aperture and small microlens radius are required for optimized device performance. Simulation results also indicated that for detectors farther from the center of the field of view, the efficacy of microlenses in crosstalk suppression and energy gathering is still maintained, except for a negligible difference in the lateral magnification from an ordinary array without microlenses.

  10. New chalcogenide glasses in the CdTe-AgI-As{sub 2}Te{sub 3} system

    SciTech Connect

    Kassem, M.; Le Coq, D.; Boidin, R.; Bychkov, E.

    2012-02-15

    Highlights: Black-Right-Pointing-Pointer Determination of the glass-forming region in the pseudo-ternary CdTe-AgI-As{sub 2}Te{sub 3} system. Black-Right-Pointing-Pointer Characterization of macroscopic properties of the new CdTe-AgI-As{sub 2}Te{sub 3} glasses. Black-Right-Pointing-Pointer Characterization of the total conductivity of CdTe-AgI-As{sub 2}Te{sub 3} glasses. Black-Right-Pointing-Pointer Comparison between the selenide and telluride equivalent systems. -- Abstract: Chalcogenide glasses in the pseudo-ternary CdTe-AgI-As{sub 2}Te{sub 3} system were synthesized and the glass-forming range was determined. The maximum content of CdTe in this glass system was found to be equal to 15 mol.%. The macroscopic characterizations of samples have consisted in Differential Scanning Calorimetry, density, and X-ray diffraction measurements. The cadmium telluride addition does not generate any significant change in the glass transition temperature but the resistance of binary AgI-As{sub 2}Te{sub 3} glasses towards crystallisation is estimated to be decreasing on the base of {Delta}T = T{sub x} - T{sub g} parameter. The total electrical conductivity {sigma} was measured by complex impedance spectroscopy. First, the CdTe additions in the (AgI){sub 0.5}(As{sub 2}Te{sub 3}){sub 0.5} host glass, (CdTe){sub x}(AgI){sub 0.5-x/2}(As{sub 2}Te{sub 3}){sub 0.5-x/2} lead to a conductivity decrease at x {<=} 0.05. Then, the behaviour is reversed at 0.05 {<=} x {<=} 0.15. The obtained results are discussed by comparison with the equivalent selenide system.

  11. The effect of dephasing on edge state transport through p-n junctions in HgTe/CdTe quantum wells.

    PubMed

    Zhang, Ying-Tao; Song, Juntao; Sun, Qing-Feng

    2014-02-26

    Using the Landauer-Büttiker formula, we study the effect of dephasing on the transport properties of the HgTe/CdTe p-n junction. It is found that in the HgTe/CdTe p-n junction the topologically protected gapless helical edge states manifest a quantized 2e²/h plateau robust against dephasing, in sharp contrast to the case for the normal HgTe/CdTe quantum well. This robustness of the transport properties of the edge states against dephasing should be attributed to the special construction of the HgTe/CdTe p-n junction, which limits the gapless helical edge states to a very narrow region and thus weakens the influence of the dephasing on the gapless edge states to a large extent. Our results demonstrate that the p-n junction could be a substitute device for use in experimentally observing the robust edge states and quantized plateau. Finally, we present a feasible scheme based on current experimental methods. PMID:24501192

  12. Conductivity and mobility profiles at 300 and 77 K of epitaxial Cd/sub chi/Hg/sub 1-chi/Te layers

    SciTech Connect

    Sangha, S.P.S.; Thompson, J.; Nicholls, R.E.; Smith, L.M. )

    1989-05-01

    The authors report the results of conductivity and mobility profiles of expitaxial layers of Cd/sub chi/Hg/sub 1-chi/Te at 300 and 77 {Kappa} obtained using the step and etch technique. In this technique, layers are sequentially stripped through chemical etching and differential Hall measurements are performed in the van der Pauw configuration.

  13. The structural and functional effects of Hg(II) and Cd(II) on lipid model systems and human erythrocytes: A review.

    PubMed

    Payliss, Brandon J; Hassanin, Mohamed; Prenner, Elmar J

    2015-12-01

    The anthropogenic mobilization of mercury and cadmium into the biosphere has led to an increased and ineludible entry of these metals into biological systems. Here we discuss the impact of Hg(II) and Cd(II) on lipid model systems and human erythrocytes from a biophysical perspective. After a brief introduction to their implications on human health, studies that have investigated the effects of Hg(II) and Cd(II) on lipid model systems and human erythrocytes are discussed. In terms of lipids as toxicological target sites, predominantly variations in lipid head groups have been the source of investigation. However, as research in this field progresses, the effects of Hg(II) and Cd(II) on other structural features, such as acyl chain length and unsaturation, and other important lipid components and complex biomimetic lipid mixtures, will require further examinations. This review provides an analysis of what has been learned collectively from the diverse methodologies and experimental conditions used thus far. Consequently, there is a need for more comprehensive and thorough investigations into the effects of Hg(II) and Cd(II) on lipid membranes under consistent experimental conditions such as pH, ionic strength, temperature, and choice of lipid model system. PMID:26455331

  14. Metal coordination study at Ag and Cd sites in crown thioether complexes through DFT calculations and hyperfine parameters.

    PubMed

    do Nascimento, Rafael R; Lima, Filipe C D A; Gonçalves, Marcos B; Errico, Leonardo A; Rentería, Mario; Petrilli, Helena M

    2015-04-01

    Structural and electronic properties of [C12H24S6X], [C13H26S6OX], and [C14H28S6OX] (X: Ag(+), Cd(2+)) crown thioether complexes were investigated within the framework of the density functional theory (DFT) using the projector augmented wave (PAW) method. The theoretical results were compared with time-differential perturbed γ-γ angular correlations (TDPAC) experiments reported in the literature using the (111)Ag→(111)Cd probe. In the case of X=Ag(+), a refinement of the structure was performed and the predicted equilibrium structures compared with available X-ray diffraction experimental data. Structural distortions induced by replacing Ag(+) with Cd(2+) were investigated as well as the electric-field gradient (EFG) tensor at the Cd(2+) sites. Our results suggest that the EFG at Cd(2+) sites corresponds to the Ag(+) coordination sphere structure, i.e., before the structural relaxations of the molecule with X=Cd(2+) are completed. The results are discussed in terms of the characteristics of the TDPAC (111)Ag→(111)Cd probe and the time window of the measurement, and provide an interesting tool with which to probe molecular relaxations. PMID:25814377

  15. CdS and AgBr sensitized eriochrome black T (EBT) dye solar cells

    NASA Astrophysics Data System (ADS)

    Sharma, G. D.; Dube, D. C.; Mathur, S. C.

    1985-11-01

    The photovoltaic and rectification properties of CdS- and AgBr-sensitized Eriochrome Black T dye solar cells have been studied. The dependence of the short-circuit current and the open-circuit voltage on light intensity and electrode material are examined and the variations with electrode material are explained on the basis of the built-in potential developed at the metal-semiconductor interface. Conversion efficiency, fill factor, diode factor and reverse saturation current are also calculated for each cell.

  16. Volume dependence of Anderson hybridization in cubic CeCd and CeAg

    SciTech Connect

    Monachesi, P. ); Andreani, L.C. ); Continenza, A. ); McMahan, A.K. )

    1993-05-15

    We have undertaken a first-principles theoretical study of the Anderson hybridization in cubic CeCd and CeAg as a function of volume reduction. We present results for the hybridization width [Delta]([epsilon]) in both the [ital J]=5/2 multiplet and in the [Gamma][sub 8], [Gamma][sub 7] crystal field states of the [ital f][sup 1] Ce configuration. We also calculate the hybridization contribution to the magnetic transition temperature. This is found to increase with pressure but is smaller than the experimental values, indicating that the Coulomb exchange contribution to the magnetic coupling is not negligible in these compounds.

  17. Volume dependence of Anderson hybridization in cubic CeCd and CeAg

    SciTech Connect

    Monachesi, P.; Continenza, A. . Dipt. di Fisica); Andreani, L.C. ); McMahan, A.K. )

    1992-09-01

    We have undertaken a first-principles theoretical study of the Anderson hybridization in cubic CeCd and CeAg as a function of volume reduction. We present results for the hybridization width [Delta]([epsilon]) in both the J = 5/2 multiplet and in the [Gamma][sub 8], [Gamma][sub 7] crystal field states of the f[sup 1] Ce configuration. We also calculate the hybridization contribution to the magnetic transition temperature. This is found to increase with pressure but is smaller than the experimental values, indicating that the Coulomb exchange contribution to the magnetic coupling is not negligible in these compounds.

  18. Volume dependence of Anderson hybridization in cubic CeCd and CeAg

    SciTech Connect

    Monachesi, P.; Continenza, A.; Andreani, L.C.; McMahan, A.K.

    1992-09-01

    We have undertaken a first-principles theoretical study of the Anderson hybridization in cubic CeCd and CeAg as a function of volume reduction. We present results for the hybridization width {Delta}({epsilon}) in both the J = 5/2 multiplet and in the {Gamma}{sub 8}, {Gamma}{sub 7} crystal field states of the f{sup 1} Ce configuration. We also calculate the hybridization contribution to the magnetic transition temperature. This is found to increase with pressure but is smaller than the experimental values, indicating that the Coulomb exchange contribution to the magnetic coupling is not negligible in these compounds.

  19. Simulation of relaxation times and energy spectra of the CdTe/Hg{sub 1-x}Cd{sub x}Te/CdTe quantum well for variable valence band offset, well width, and composition x

    SciTech Connect

    Melezhik, E. O. Gumenjuk-Sichevska, J. V.; Sizov, F. F.

    2010-10-15

    The dependences of relaxation times and energy spectrum of the CdTe/Hg{sub 1-x}Cd{sub x}Te/CdTe quantum well (QW) on its parameters were simulated in the cadmium molar fraction range 0 < x < 0.16. It was found that the x increase from 0 to 0.16 changes electron wave function localization in the QW. A criterion for determining the number of interface levels of localized electrons depending on QW parameters was obtained. The effect of a sharp (by two orders of magnitude) increase in the relaxation time of localized electrons was detected at small QW widths and x close to 0.16.

  20. Calculation of the magneto-optical response of Kane fermions in HgCdTe

    NASA Astrophysics Data System (ADS)

    Malcolm, John; Nicol, Elisabeth

    2015-03-01

    The concentration x =xc ~ 0 . 17 in HgxCd1 - x Te describes a critical value in the phase transition between semimetal (x xc). At this critical value, the low-energy quasiparticle dispersion exhibits a node at the intersection of two doubly degenerate linear cones and an equally degenerate flat band; quasiparticles that have been dubbed Kane fermions. We present our results for the calculation of the magneto-optical spectra of these Kane fermions in the three-dimensional material, which can be compared to experiment, and also for those confined to only two-dimensions. The latter allows for a direct comparison to the analogous theoretical Dirac-Weyl system in two dimensions with pseudospin one.

  1. Slurry sampling flow injection chemical vapor generation inductively coupled plasma mass spectrometry for the determination of trace Ge, As, Cd, Sb, Hg and Bi in cosmetic lotions.

    PubMed

    Chen, Wei-Ni; Jiang, Shiuh-Jen; Chen, Yen-Ling; Sahayam, A C

    2015-02-20

    A slurry sampling inductively coupled plasma mass spectrometry (ICP-MS) method has been developed for the determination of Ge, As, Cd, Sb, Hg and Bi in cosmetic lotions using flow injection (FI) vapor generation (VG) as the sample introduction system. A slurry containing 2% m/v lotion, 2% m/v thiourea, 0.05% m/v L-cysteine, 0.5 μg mL(-1) Co(II), 0.1% m/v Triton X-100 and 1.2% v/v HCl was injected into a VG-ICP-MS system for the determination of Ge, As, Cd, Sb, Hg and Bi without dissolution and mineralization. Because the sensitivities of the analytes in the slurry and that of aqueous solution were quite different, an isotope dilution method and a standard addition method were used for the determination. This method has been validated by the determination of Ge, As, Cd, Sb, Hg and Bi in GBW09305 Cosmetic (Cream) reference material. The method was also applied for the determination of Ge, As, Cd, Sb, Hg and Bi in three cosmetic lotion samples obtained locally. The analysis results of the reference material agreed with the certified value and/or ETV-ICP-MS results. The detection limit estimated from the standard addition curve was 0.025, 0.1, 0.2, 0.1, 0.15, and 0.03 ng g(-1) for Ge, As, Cd, Sb, Hg and Bi, respectively, in original cosmetic lotion sample. PMID:25682241

  2. Influence of reactive sulfide (AVS) and supplementary food on Ag, Cd and Zn bioaccumulation in the marine polychaete Neanthes arenaceodentata

    USGS Publications Warehouse

    Lee, J.-S.; Lee, B.-G.; Yoo, H.; Koh, C.-H.; Luoma, S.N.

    2001-01-01

    A laboratory bioassay determined the relative contribution of various pathways of Ag, Cd and Zn bioaccumulation in the marine polychaete Neanthes arenaceodentata exposed to moderately contaminated sediments. Juvenile worms were exposed for 25 d to experimental sediments containing 5 different reactive sulfide (acid volatile sulfides, AVS) concentrations (1 to 30 ??mol g-1), but with constant Ag, Cd, and Zn concentrations of 0.1, 0.1 and 7 ??mol g-1, respectively. The sediments were supplemented with contaminated food (TetraMin??) containing 3 levels of Ag-Cd-Zn (uncontaminated, 1?? or 5??1 metal concentrations in the contaminated sediment). The results suggest that bioaccumulation of Ag, Cd and Zn in the worms occurred predominantly from ingestion of contaminated sediments and contaminated supplementary food. AVS or dissolved metals (in porewater and overlying water) had a minor effect on bioaccumulation of the 3 metals in most of the treatments. The contribution to uptake from the dissolved source was most important in the most oxic sediments, with maximum contributions of 8% for Ag, 30% for Cd and 20% for Zn bioaccumulation. Sediment bioassays where uncontaminated supplemental food is added could seriously underestimate metal exposures in an equilibrated system; N. arenaceodentata feeding on uncontaminated food would be exposed to 40-60% less metal than if the food source was equilibrated (as occurs in nature). Overall, the results show that pathways of metal exposure are dynamically linked in contaminated sediments and shift as external geochemical characteristics and internal biological attributes vary.

  3. Defects in the crystal structure of Cd{sub x}Hg{sub 1-x}Te layers grown on the Si (310) substrates

    SciTech Connect

    Yakushev, M. V. Gutakovsky, A. K.; Sabinina, I. V.; Sidorov, Yu. G.

    2011-07-15

    Microstructure of the CdTe (310) and CdHgTe (310) layers grown by molecular-beam epitaxy on Si substrates has been studied by the methods of transmission electron microscopy and selective etching. It is established that formation of antiphase domains in the CdHgTe/CdTe/ZnTe/Si(310) is determined by the conditions of formation of the ZnTe/Si interface. Monodomain layers can be obtained by providing conditions that enhance zinc adsorption. An increase in the growth temperature and in the pressure of Te{sub 2} vapors gives rise to antiphase domains and induces an increase in their density to the extent of the growth of poly-crystals. It is found that stacking faults exist in a CdHgTe/Si(310) heterostructure; these defects are anisotropically distributed in the bulk of grown layers. The stacking faults are predominantly located in one (111) plane, which intersects the (310) surface at an angle of 68 Degree-Sign . The stacking faults originate at the ZnTe/Si(310) interface. The causes of origination of stacking faults and of their anisotropic distribution are discussed.

  4. Electrophysical properties of Cd x Hg1- x Te ( x = 0.3) films grown by molecular beam epitaxy on Si(013) substrates

    NASA Astrophysics Data System (ADS)

    Varavin, V. S.; Marin, D. V.; Yakushev, M. V.

    2016-04-01

    The electrophysical properties of Cd x Hg1- x Te ( x ≈ 0.3) films undoped and doped with indium during their growth were investigated. The as-grown films were subjected to heat treatment in mercury vapor. The magnetic field dependences of the Hall effect in the magnetic field range of 0.05-1.0 T at 77 K were explained by the fact that, in the films, there are two types of electrons with high and low mobilities. The analysis of the temperature dependences of the minority carrier lifetime in the range of 77-300 K revealed that the as-grown films contain two types of traps with different energies. It was found that annealing at a saturated mercury vapor pressure increases the minority carrier lifetime due to the suppression of recombination centers, which can be associated with growth defects in Cd x Hg1- x Te/CdTe/Si heterostructures.

  5. [Concentration of Hg, Pb, Cd, Cr and As in liver Carcharhinus limbatus (Carcharhiniformes: Carcharhinidae) captured in Veracruz, Mexico].

    PubMed

    Mendoza-Díaz, Fernando; Serrano, Arturo; Cuervo-López, Liliana; López-Jiménez, Alejandra; Galindo, José A; Basañez-Muñoz, Agustin

    2013-06-01

    Pollution by heavy metals in marine ecosystems in the Gulf of Mexico is one of the hardest conservation issues to solve. Sharks as top predators are bioindicators of the marine ecosystem health, since they tend to bioaccumulate and biomagnify contaminants; they also represent a food source for local consumption. Thus, the objective of this study was to study the possible presence of heavy metals and a metalloid in livers of Carcharhinus limbatus. For this, a total of 19 shark livers were taken from animals captured nearby Tamihua, Veracruz, Mexico from December 2007 to April 2008. 12 out of the 19 captured sharks were males, one was an adult female, three were juvenile males, and three juvenile females. Four heavy metals (Hg, Pb, Cd, and Cr) and one metaloid (As) were analyzed in shark livers using an atomic absorption spectrophotometry with flame and hydride generator. Our results showed that the maximum concentrations found were: Hg = 0.69 mg/kg, Cd = 0.43 mg/kg, As = 27.37 mg/kg, Cr = 0.70 mg/kg. The minimum concentrations found were: As = 14.91 mg/kg, Cr = 0.35 mg/kg. The Pb could not be determined because the samples did not have the spectrophotometer minimum detectable amount (0.1 mg/kg). None of the 19 samples analyzed showed above the permissible limits established by Mexican and American laws. There was a correlation between shark size and Cr and As concentration (Pearson test). The concentration of Cr and As was observed to be higher in bigger animals. There was not a significant difference in heavy metals concentration between juveniles and adults; however, there was a difference between males and females. A higher Cr concentration was found in females when compared to males. None of the samples exceed the maximum limit established by the laws of Mexico and the United States of America. Much longer studies are needed with C. limbatus and other species caught in the region, in order to determine the degree of contaminants exposure in aquatic ecosystems

  6. The future of large format HgCdTe arrays for astronomy

    NASA Technical Reports Server (NTRS)

    Vural, K.

    1994-01-01

    Rockwell has developed the 256 x 256 Near Infrared Camera and Multi-Object Spectrometer 3 (NICMOS3) FPA for the Hubble Space Telescope under funding from NASA through the University of Arizona. Since 1989, dozens of science grade devices have been delivered to astronomers throughout the world for ground based infrared observations. These devices have excellent sensitivity at 77 K with mean dark currents of 0.1 e(-)/s, noise of 25 e(-), and quantum efficiency of 55-70%. Pixel yields as high as 99.9% have been achieved. Our present plans are to develop a 1024 x 1024 focal plane array (FPA) with 2.5 micron cutoff and make it available to astronomers. Such large arrays are made possible by the advances in detector material size (3 in. diameter producible alternative to CdTe for epitaxy (PACE-I) wafers), multiplexer advances (ability to verify the design in detail and availability of advanced foundries), and novel hybridization and reliability approaches.

  7. DFT study of Hg adsorption on M-substituted Pd(1 1 1) and PdM/γ-Al2O3(1 1 0) (M = Au, Ag, Cu) surfaces

    NASA Astrophysics Data System (ADS)

    Wang, Jiancheng; Yu, Huafeng; Geng, Lu; Liu, Jianwen; Han, Lina; Chang, Liping; Feng, Gang; Ling, Lixia

    2015-11-01

    The adsorption of Hgn (n = 1-3) on the Au-, Ag-, Cu-substituted Pd(1 1 1) surfaces as well as the PdM/γ-Al2O3(1 1 0) (M = Au, Ag, Cu) surfaces has been investigated using spin-polarized density functional theory calculations. It is found that M-substituted Pd(1 1 1) surfaces show as good Hg adsorption capacity as the perfect Pd(1 1 1) at low Hg coverage, while the Hg adsorption capacity is only slightly weakened at high Hg coverage. On the basis of stepwise adsorption energies analysis, it is concluded that M-substituted Pd(1 1 1) surfaces can contribute to the binding of Hg atom on the surfaces at high Hg coverage. The electronic properties of the second metal atoms are the main factor contributes to the Hg adsorption capacity. Gas phase Pd2 shows better Hg adsorption capacity than Pd2/γ-Al2O3, while PdM/γ-Al2O3 can adsorb Hg more efficiently than bare PdM clusters. It suggests that the γ-Al2O3 support can enhance the activity of PdM for Hg adsorption and reduces the activity of Pd2. It is also found that Pd is the main active composition responsible for the interaction of mercury with the surface for PdM/γ-Al2O3 sorbent. Taking Hg adsorption capacity and economic costs into account, Cu addition is a comparatively good candidate for Hg capture.

  8. Development of CdO-graphite-Ag coatings for gas bearings to 427 C

    NASA Technical Reports Server (NTRS)

    Bhushan, B.

    1981-01-01

    Graphite is one of the most commonly known lubricants. Its effectiveness in a range between room temperature (RT) and 540 C is reportedly improved by adding cadmium oxide. CdO-graphite powder in a gas carrier has been used in numerous applications that rely on dry lubrication. A coating of this composition was developed and successfully tested in foil air bearings for long periods up to a temperature of 427 C and at a normal contacting load (during starting and stopping) of 14 kPa based on bearing projected area. The addition of ultra-fine silver to the CdO-graphite has improved the coating endurance. At 427 C, the CdO-graphite-Ag coating performed better than CdO-graphite without silver, both for extended periods at 14 kPa loading and for limited periods at 35 kPa. At 288 C, the coating was tested for an extended period up to 28 kPa and has also successfully completed high-speed shock tests to an acceleration level of 100g.

  9. Seasonal survey of contaminants (Cd and Hg) and micronutrients (Cu and Zn) in edible tissues of cephalopods from Tunisia: assessment of risk and nutritional benefits.

    PubMed

    Rjeibi, Moncef; Metian, Marc; Hajji, Tarek; Guyot, Thierry; Ben Chaouacha-Chekir, Rafika; Bustamante, Paco

    2015-01-01

    Concentrations of cadmium (Cd), copper (Cu), mercury (Hg), and zinc (Zn) were determined by atomic absorption spectrophotometry in the muscle tissues (arms and mantle) of 3 commercial cephalopods (Loligo vulgaris, Octopus vulgaris, and Sepia officinalis) caught in 3 different Tunisian coastal regions. The highest concentrations found correspond to the essential elements Cu and Zn. Octopuses and cuttlefish showed the highest levels of those elements whereas squid presented with significantly higher values of Hg in both muscular tissues. This may be related to different feeding behavior and detoxification processes among benthic and pelagic cephalopods. Variation of element concentrations between seasons was different between species and seemed to be mostly dependent on the sampling site. From a public health standpoint, average concentrations of Cd, Cu, Hg, and Zn measured in edible tissues of cephalopods from this study did not reveal, in general, any risk for consumers. The estimated target hazard quotients for Cd and Hg for consumers of the selected species were below 1 and within the safety range for human health. Moreover, their consumption could provide in an important contribution to the daily dietary intake of Cu for the Tunisian population, especially regarding the consumption of octopus and cuttlefish muscles. PMID:25427969

  10. Effects of Gravity on the Double-Diffusive Convection during Directional Solidification of a Non-Dilute Alloy with Application to the HgCdTe

    NASA Technical Reports Server (NTRS)

    Bune, Andris; Gillies, Donald; Lehoczky, Sandor

    1999-01-01

    General 2-D and 3-D finite element model of non-dilute alloy solidification was used to simulate growth of HgCdTe in terrestrial and microgravity conditions. Parametric research was undertaken to investigate effects of gravity level, gravity vector orientation and growth velocity on the pattern of melt convection, shape of crystal/melt interface and radial thermal gradient. Verification of the model was undertaken by comparison with previously published results. For low growth velocities plane front solidification occurs. The location and the shape of the interface was determined using melting temperatures obtained from the HgCdTe liquidus curve. The low thermal conductivity of the solid HgCdTe causes thermal short circuit through the ampoule walls, resulting in curved isotherms in the vicinity of the interface. Double-diffusive convection in the melt is caused by radial temperature gradients and by material density inversion with temperature. Cooling from below and the rejection at the solid-melt interface of the heavier HgTe-rich solute each tend to reduce convection. Because of these complicating factors dimensional rather then non-dimensional modeling was performed. For gravity levels higher then 10(exp -7) of terrestrial one it was found that the maximum convection velocity is extremely sensitive to gravity vector orientation and can be reduced at least by 50% by choosing proper orientation of the ampoule. The predicted interface shape is in agreement with one obtained experimentally by quenching.

  11. Effects of Gravity on the Double-Diffusive Convection During Directional Solidification of a Non-Dilute Alloy with Application to HgCdTe

    NASA Technical Reports Server (NTRS)

    Bune, Andris V.; Gillies, Donald C.; Lehoczky, Sandor L.

    1999-01-01

    A general 2-D and 3-D finite element model of non-dilute alloy solidification was used to simulate growth of HgCdTe in terrestrial and microgravity conditions. Verification of the 3-D model was undertaken by comparison with previously published results on convection in an inclined cylinder. For low growth velocities, plane front solidification occurs. The location and the shape of the interface were determined using melting temperatures obtained from the HgCdTe liquidus curve. The low thermal conductivity of the solid HgCdTe causes a thermal short circuit through the ampoule walls, resulting in curved isotherms in the vicinity of the interface. Double-diffusive convection in the melt is caused by radial temperature gradients and by material density inversion due to the combined effects of composition and temperature. Cooling from below and the rejection at the solid-melt interface of the heavier HgTe-rich solute each tend to reduce convection. Because of these complicating factors, dimensional rather than non-dimensional modeling was performed. the predicted interface shape is in agreement with one obtained experimentally by quenching.

  12. Availability of sediment-bound Cd, Co, and Ag to mussels

    SciTech Connect

    Gagnon, C.; Fisher, N.S.

    1995-12-31

    Ingested sediment is one potentially important source of metals for benthic organisms. The influence of physical and chemical properties of oxidized sediments on the bioavailability of metals to marine filter feeders is largely unknown. The authors examined the relative importance of specific sedimentary components that may exert control on the uptake of Cd, Co, and Ag in the mussel Mytilus edulis. Iron and manganese oxides, montmorillonite clay, silica, and natural sediment particles were triple labeled with the gamma emitters {sup 109}Cd, {sup 57}Co, and {sup 110m}Ag. Some particles were also coated with fulvic acid (FA) to simulate the influence of organic coating on metal bioavailability. Metals associated with FA-coated particles were generally absorbed by mussels to a greater extent than metals associated with uncoated particles. Desorption experiments with labeled particles at pH 5 were performed in parallel to simulate the behavior of food-bound metals in the acidic gut of bivalves. High correlations (r > 0.97) between the amount of desorbed metal under these conditions and the assimilation efficiency for metals from FA-coated particles were noted among coated particles but not uncoated particles (r < 0.6). These results suggest that the relation between metal partitioning to sediments and biological availability of the metal is not obvious, since the organic coatings and the acidic digestion process influence assimilation of sediment-bound metals.

  13. Heavy metal (Hg, Cr, Cd, and Pb) contamination in urban areas and wildlife reserves: honeybees as bioindicators.

    PubMed

    Perugini, Monia; Manera, Maurizio; Grotta, Lisa; Abete, Maria Cesarina; Tarasco, Renata; Amorena, Michele

    2011-05-01

    The degree of heavy metal (Hg, Cr, Cd, and Pb) pollution in honeybees (Apis mellifera) was investigated in several sampling sites around central Italy including both polluted and wildlife areas. The honeybee readily inhabits all environmental compartments, such as soil, vegetation, air, and water, and actively forages the area around the hive. Therefore, if it functions in a polluted environment, plant products used by bees may also be contaminated, and as a result, also a part of these pollutants will accumulate in the organism. The bees, foragers in particular, are good biological indicators that quickly detect the chemical impairment of the environment by the high mortality and the presence of pollutants in their body or in beehive products. The experiment was carried out using 24 colonies of honeybees bred in hives dislocated whether within urban areas or in wide countryside areas. Metals were analyzed on the foragers during all spring and summer seasons, when the bees were active. Results showed no presence of mercury in all samples analyzed, but honeybees accumulated several amounts of lead, chromium, and cadmium. Pb reported a statistically significant difference among the stations located in urban areas and those in the natural reserves, showing the highest values in honeybees collected from hives located in Ciampino area (Rome), next to the airport. The mean value for this sampling station was 0.52 mg kg(-1), and July and September were characterized by the highest concentrations of Pb. Cd also showed statistically significant differences among areas, while for Cr no statistically significant differences were found. PMID:20393811

  14. Band bending at Al, In, Ag, and Pt interfaces with CdTe and ZnTe (110)

    NASA Technical Reports Server (NTRS)

    Wahi, A. K.; Miyano, K.; Carey, G. P.; Chiang, T. T.; Lindau, I.

    1990-01-01

    UV and X-ray photoelectron spectroscopic methods are presently used to study the band-bending behavior and interfacial chemistry of Al, In, Ag, and Pt overlayers on vacuum-cleaved p-CdTe and p-ZnTe (110). All four metals are found to yield Schottky barriers on CdTe and ZnTe. The metal-induced gap states model prediction of a difference in barrier heights for two semiconductors which is dependent on their band lineup is borne out by the results for Ag, Pt, and Al, but not for In. Reaction and intermixing for Al, Ag, and Pt overlayers on CdTe and ZnTe indicate that these interfaces are not ideal.

  15. Dark Current Characterization of SW HgCdTe IRFPAs Detectors on Si Substrate with Long Time Integration

    NASA Astrophysics Data System (ADS)

    Song, P. Y.; Ye, Z. H.; Huang, A. B.; Chen, H. L.; Hu, X. N.; Ding, R. J.; He, L.

    2016-05-01

    The dark currents of two short wave (SW) HgCdTe infrared focal plane arrays (IRFPA) detectors hybridized with direct injection (DI) readout and capacitance transimpedance amplifier (CTIA) with long time integration were investigated. The cutoff wavelength of the two SW IRFPAs is about 2.6 μm at 84 K. The dark current densities of DI and CTIA samples are approximately 8.0 × 10-12 A/cm2 and 7.2 × 10-10 A/cm2 at 110 K, respectively. The large divergence of the dark current density might arise from the injection efficiency difference of the two readouts. The low injection efficiency of the DI readout, compared with the high injection efficiency of the CTIA readout at low temperature, makes the dark current density of the DI sample much lower than that of the CTIA sample. The experimental value of injection efficiency of the DI sample was evaluated as 1.1% which is consistent with its theoretical value.

  16. Effect of surface fields on the dynamic resistance of planar HgCdTe mid-wavelength infrared photodiodes

    NASA Astrophysics Data System (ADS)

    He, Kai; Zhou, Song-Min; Li, Yang; Wang, Xi; Zhang, Peng; Chen, Yi-Yu; Xie, Xiao-Hui; Lin, Chun; Ye, Zhen-Hua; Wang, Jian-Xin; Zhang, Qin-Yao

    2015-05-01

    This work investigates the effect of surface fields on the dynamic resistance of a planar HgCdTe mid-wavelength infrared photodiode from both theoretical and experimental aspects, considering a gated n-on-p diode with the surface potential of its p-region modulated. Theoretical models of the surface leakage current are developed, where the surface tunnelling current in the case of accumulation is expressed by modifying the formulation of bulk tunnelling currents, and the surface channel current for strong inversion is simulated with a transmission line method. Experimental data from the fabricated devices show a flat-band voltage of V F B = - 5.7 V by capacitance-voltage measurement, and then the physical parameters for bulk properties are determined from the resistance-voltage characteristics of the diode working at a flat-band gate voltage. With proper values of the modeling parameters such as surface trap density and channel electron mobility, the theoretical R 0 A product and corresponding dark current calculated from the proposed model as functions of the gate voltage Vg demonstrate good consistency with the measured values. The R 0 A product remarkably degenerates when Vg is far below or above VFB because of the surface tunnelling current or channel current, respectively; and it attains the maximum value of 5.7 × 10 7 Ω . cm 2 around the transition between surface depletion and weak inversion when V g ≈ - 4 V , which might result from reduced generation-recombination current.

  17. Heterojunction depth in P+-on-n eSWIR HgCdTe infrared detectors: generation-recombination suppression

    NASA Astrophysics Data System (ADS)

    Schuster, J.; DeWames, R. E.; DeCuir, E. A.; Bellotti, E.; Dhar, N.; Wijewarnasuriya, P. S.

    2015-08-01

    A key design feature of P+-on-n HgCdTe detectors is the depth of the p-type region. Normally, homojunction architectures are utilized where the p-type region extends into the narrow-gap absorber layer. This facilitates the collection of photo-carriers from the absorber layer to the contact; however, this may result in excess generation-recombination (G-R) current if defects are present. Alternatively, properly adopting a heterojunction architecture confines the p-type region (and the majority of the electric field) solely to the wide-gap layer. Junction placement is critical since the detector performance is now dependent on the following sensitivity parameters: p-type region depth, doping, valence band offset, lifetime and detector bias. Understanding the parameter dependence near the hetero-metallurgical interface where the compositional grading occurs and the doping is varied as either a Gaussian or error function is vital to device design. Numerical modeling is now essential to properly engineer the electric field in the device to suppress G-R current while accounting for the aforementioned sensitivity parameters. The simulations reveal that through proper device design the p-type region can be confined to the wide-gap layer, reducing G-R related dark current, without significantly reducing the quantum efficiency at the operating bias V = -0.100V.

  18. 1024 × 1024 HgCdTe CMOS camera for infrared imaging magnetograph of Big Bear Solar Observatory

    NASA Astrophysics Data System (ADS)

    Cao, W.; Xu, Y.; Denker, C.; Wang, H.

    2005-08-01

    The InfraRed Imaging Magnetograph (IRIM)1,2 is a two-dimensional narrow-band solar spectro-polarimeter currently being developed at Big Bear Solar Observatory (BBSO). It works in the near infrared (NIR) from 1.0 μm to 1.7 μm and possesses high temporal resolution, high spatial resolution, high spectral resolving power, high magnetic sensitivity. As the detector of IRIM, the 1024 × 1024 HgCdTe TCM8600 CMOS camera manufactured by the Rockwell Scientific Company plays a very important role in acquiring the high precision solar spectropolarimetry data. In order to make the best use of it for solar observation, the characteristic evaluation was carried out at BBSO and National Solar Observatory (NSO), Sacramento Peak in October 2003. The paper presents a series of measured performance parameters including linearity, readout noise, gain, full well capacity, hot pixels, dark, flat field, frame rate, vacuum, low temperature control, etc., and shows some solar infrared narrow band imaging observation results.

  19. The quantum efficiency of HgCdTe photodiodes in relation to the direction of illumination and to their geometry

    NASA Technical Reports Server (NTRS)

    Rosenfeld, D.; Bahir, G.

    1993-01-01

    A theoretical study of the effect of the direction of the incident light on the quantum efficiency of homogeneous HgCdTe photodiodes suitable for sensing infrared radiation in the 8-12 microns atmospheric window is presented. The probability of an excess minority carrier to reach the junction is derived as a function of its distance from the edge of the depletion region. Accordingly, the quantum efficiency of photodiodes is presented for two geometries. In the first, the light is introduced directly to the area in which it is absorbed (opaque region), while in the second, the light passes through a transparent region before it reaches the opaque region. Finally, the performance of the two types of diodes is analyzed with the objective of finding the optimal width of the absorption area. The quantum efficiency depends strongly on the way in which the light is introduced. The structure in which the radiation is absorbed following its crossing the transparent region is associated with both higher quantum efficiency and homogeneity. In addition, for absorption region widths higher than a certain minimum, the quantum efficiency in this case is insensitive to the width of the absorption region.

  20. Low-noise, low-power HgCdTe/Al2O3 1024 x 1024 FPAs

    NASA Astrophysics Data System (ADS)

    Kozlowski, Lester J.; Vural, Kadri; Cooper, Donald E.; Chen, C. Y.; Stephenson, D. M.; Cabelli, Scott A.

    1996-10-01

    We have developed two high performance 1024 multiplied by 1024 focal plane arrays for astronomy, spectroscopy, surveillance and conventional imaging. Each hybrid consists of a photovoltaic HgCdTe detector array, fabricated on Al2O3 substrate and having photoresponse cutoff wavelength optimized for each specific application, mated to a CMOS silicon readout via indium column interconnects. In addition to updating the performance of our 1024 multiplied by 1024 FPA for astronomy developed in 1994, we introduce a second 1024 multiplied by 1024 having capability for operation at TV-type frame rates. The latter device also has low read noise but at much higher bandwidth by virtue of its capacitive transimpedance amplifier input and pipelined readout architecture. Both devices have been shown capable of consistently achieving background-limited sensitivity at very low infrared backgrounds (less than or equal to 109 photons/cm2-sec) by their low read noise, low dark current including negligible MOSFET self-emission, and high quantum efficiency. FPA pixel operability as high as 99.94% with mean peak D* of 1014 cm-Hz1/2/W has been demonstrated. Proprietary hybridization and mounting techniques are being used to insure hybrid reliability after many thermal cycles. The hybrid methodology has been modeled using finite element modeling to understand the limiting mechanisms; very good agreement has been achieved with the measured reliability.

  1. Properties of PACE-I HgCdTe Detectors in Space: The NICMOS Warm-Up Monitoring Program

    NASA Astrophysics Data System (ADS)

    Böker, T.; Bacinski, J.; Bergeron, L.; Calzetti, D.; Jones, M.; Gilmore, D.; Holfeltz, S.; Monroe, B.; Nota, A.; Sosey, M.; Schneider, G.; O'Neil, E.; Hubbard, P.; Ferro, A.; Barg, I.; Stobie, E.

    2001-07-01

    We summarize the results of a monitoring program which was executed following the cryogen exhaustion of the Near Infrared Camera and Multi-Object Spectrometer (NICMOS) on board the Hubble Space Telescope. During the subsequent warm-up, detector parameters such as detective quantum efficiency, dark current, bias offsets, and saturation levels have been measured over the temperature range 62 K to about 100 K. The measurements provide a unique database of the characteristics of PACE-I HgCdTe detector arrays in the space environment. A surprising result of the analysis is the fact that all three NICMOS detectors showed an enhanced dark current in the temperature range between 77 and 85 K. However, a subsequent laboratory experiment designed to replicate the on-orbit warm-up did not reproduce the anomaly, despite the fact that it employed a flight-spare detector of the same pedigree. The mechanism behind the on-orbit dark current anomaly is therefore believed to be unique to the space environment. We discuss possible explanations for these unexpected observational results, as well as their implications for future NICMOS operations.

  2. Dark Current Characterization of SW HgCdTe IRFPAs Detectors on Si Substrate with Long Time Integration

    NASA Astrophysics Data System (ADS)

    Song, P. Y.; Ye, Z. H.; Huang, A. B.; Chen, H. L.; Hu, X. N.; Ding, R. J.; He, L.

    2016-09-01

    The dark currents of two short wave (SW) HgCdTe infrared focal plane arrays (IRFPA) detectors hybridized with direct injection (DI) readout and capacitance transimpedance amplifier (CTIA) with long time integration were investigated. The cutoff wavelength of the two SW IRFPAs is about 2.6 μm at 84 K. The dark current densities of DI and CTIA samples are approximately 8.0 × 10-12 A/cm2 and 7.2 × 10-10 A/cm2 at 110 K, respectively. The large divergence of the dark current density might arise from the injection efficiency difference of the two readouts. The low injection efficiency of the DI readout, compared with the high injection efficiency of the CTIA readout at low temperature, makes the dark current density of the DI sample much lower than that of the CTIA sample. The experimental value of injection efficiency of the DI sample was evaluated as 1.1% which is consistent with its theoretical value.

  3. Resistance-area product of diodes in a long-wavelength infrared HgCdTe mosaic array

    NASA Astrophysics Data System (ADS)

    Gopal, Vishnu; Dhar, Vikram

    2002-02-01

    A long wavelength infrared (LWIR) 2D (mosaic) diode array has been studied by numerically solving the diffusion equation in terms of thermally generated carriers in a n +-on-p HgCdTe diode in an array environment. The results are presented in terms of the resistance-area ( RA) product, in the diffusion-limited case. The results are compared with analytical expressions in the limiting case of the infinite diode. For a finite diode, with a definite junction depth, and a diode size that is smaller than the pitch, the RA, obtained from quasi-3D calculations, is smaller than that expected for the infinite diode case, the deviation being greater for small diodes. Commonly in the literature, the theoretical values of the infinite (1D) diode - which are overestimates - are stated as experimental targets. In the present calculations, the volume of the diode is considered to consist of two parts: one that contributes to the lateral diffusion current that is collected by the four lateral faces of the diode junction, and another that is the `normal' diffusion current, collected by the planar part of the junction from the volume `under' the diode. For the infinite diode case, only the latter component exists. The effect of the perimeter-to-area ratio on the RA in an array environment has been studied. The effective diffusion length associated with the finite diode geometry in an array differs from the standard diffusion length.

  4. Toxic metal (Pb, Cd, Cr, and Hg) levels in Rapana venosa (Valenciennes, 1846), Eriphia verrucosa (Forskal, 1775), and sediment samples from the Black Sea littoral (Thrace, Turkey).

    PubMed

    Mülayim, A; Balkıs, H

    2015-06-15

    Rapana venosa (Valenciennes, 1846) and Eriphia verrucosa (Forskal, 1775) are the dominant benthic invertebrate species along the Thrace Coast of the western Black Sea. The aim of this study was to determine toxic metal (Hg, Cr, Cd, and Pb) accumulation levels in these species, as well as within littoral sediments from this area. Our results showed that all of the metals, except for Cd, were below that in average shale. The measured accumulation levels were mostly within the range of what is naturally found within the earth's crust. However, some study stations did have increased concentrations, indicating anthropogenic pollution in these areas. The Cd contents of E. verrucosa collected from all our study stations were well above the limits set by the Turkish Food Codex, especially in Kıyıköy, whereas Pb content was close to the limit at all stations and exceeded the limit in Kıyıköy, but Hg content was below the limit at all stations. Cd content of R. venosa exceeded the limit only in Kumköy. Pb content was below the limit, and Hg was at or slightly above the limit at all stations. PMID:25913797

  5. Extending the Astronomical Application of Photon Counting HgCdTe Linear Avalanche Photo-Diode Arrays to Low Background Space Observations.

    NASA Astrophysics Data System (ADS)

    Hall, Donald

    The high quantum efficiency and very low dark current, together with the ability to set the wavelength cutoff from one to far beyond 5.5 microns, of large format HAWAII HgCdTe arrays have already made them the workhorse for NASA space astronomy (and related) observations in the 1 to 5.5 micron infrared. They have performed outstandingly on Hubble Wide Field Camera 3 and WISE (and also Deep Impact/EPOXI and OCO-2) and are crucial to the two major NASA Astrophysics missions, JWST and WFIRST, and to Euclid. The proposed investigation seeks to extend these benefits to the most demanding observations those that seek to wring information from only a few photons (starved due to either the intrinsic faintness of the source or the need for high spectral or time resolution) or to discriminate a weak signature against a bright source. We will characterize, and optimize for space astronomy observations, the unique linear avalanche properties of HgCdTe photo-diodes (HgCdTe L-APDs) that allow noiseless (i.e. faithfully preserves the Poisson statistics of the incoming photons) avalanche multiplication of individual photo-electrons. 2.5 micron HgCdTe L-APD technology, developed for infrared eye-safe LIDAR and range gated imaging, is already benefiting infrared wavefront sensing for ground based adaptive optics. In HgCdTe the L-APD gain and the onset voltage for tunneling current are exponential functions of bandgap while also varying with cryogenic operating temperature. The unique HgCdTe bandgap engineering that allows tuning of the cutoff wavelength can be used to critically improve avalanche performance for specific applications. We will thoroughly evaluate avalanche performance at several representative bandgaps so as to allow model prediction of performance over the critical 1 to 5 micron spectral interval. The proposed investigation will hybridize modest 32x32 arrays of HgCdTe L-APDs to photon counting readouts already developed under another award and characterize their

  6. Native oxide encapsulation for annealing boron-implanted Hg/sub 1-//sub x-italic/Cd/sub x-italic/Te

    SciTech Connect

    Kao, T.; Sigmon, T.W.

    1986-08-25

    We report for the first time the successful use of the Hg/sub 1-//sub x-italic/Cd/sub x-italic/Te native oxide as an encapsulation layer for an annealing process designed to activate an implanted impurity. The annealing process does not require Hg over pressure and consists of both furnace (--200 /sup 0/C) and rapid thermal (--320 /sup 0/C) anneals. Using 2.2 MeV /sup 4/He/sup +/ ion channeling measurements, we show that the implantation damage can be annealed out without loss of Hg from the substrate. Also, both secondary ion mass spectrometry and differential van der Pauw measurements indicate that the resulting electron concentration profile closely matches that of the implanted /sup 11/B profile and the electrical junction is found to lie close to the expected position of the metallurgical junction.

  7. Hybrid Au-CdSe and Ag-CdSe nanoflowers and core-shell nanocrystals via one-pot heterogeneous nucleation and growth.

    PubMed

    AbouZeid, Khaled M; Mohamed, Mona B; El-Shall, M Samy

    2011-12-01

    A general approach, based on heterogeneous nucleation and growth of CdSe nanostructures on Au or Ag nanocrystals, for the synthesis of Au-CdSe and Ag-CdSe hybrid nanostructures is developed. The new approach provides a versatile one-pot route for the synthesis of hybrid nanoflowers consisting of a gold or silver core and multipod CdSe rods or an intact CdSe shell with controlled thickness, depending on the nucleation and growth parameters. At lower growth temperatures such as 150 °C, the CdSe clusters are adsorbed on the surface of the metal cores in their surface defects, then multiple arms and branches form, resulting in nanoflower-shaped hybrid structures. Increasing the size of the metal core through the choice of the reducing and capping agents results in an improvement of the interface between the metal and CdSe domains, producing core-shell structures. The growth temperature appears to be the most important factor determining the nature of the interface between the metal and CdSe domains. At relatively high temperatures such as 300 °C, the formation of large, faceted Au cores creates preferential growth sites for the CdSe nanocrystalline shell, thus resulting in well-defined Au-CdSe core-shell structures with large interfaces between the Au and CdSe domains. The present approach is expected to foster systematic studies of the electronic structures and optical properties of the metal-semiconductor hybrid materials for potential applications in photovoltaic and nanoelectronic devices. PMID:21994186

  8. Investigation of surface potential in the V-defect region of MBE Cd{sub x}Hg{sub 1−x}Te film

    SciTech Connect

    Novikov, V. A. Grigoryev, D. V.

    2015-03-15

    Atomic-force microscopy is used to investigate the distribution of the contact-potential difference (surface potential) in Cd{sub x}Hg{sub 1−x}Te epitaxial films grown by molecular-beam epitaxy. Modification of the solid-solution composition near the V-defect results in a variation in the contact-potential difference. It is shown that the solid-solution composition varies by ∼0.05 (2.5 at %) towards increasing mercury content in the V-defect region, and a region of mercury depletion by 0.36 at % is observed at the V-defect periphery. From analysis of the surface-potential distribution, it is shown that the Cd{sub x}Hg{sub 1−x}Te epitaxial film contains unform V-defects with a diameter less than 1 μm in addition to macroscopic V-defects.

  9. Impact of the nanosecond volume discharge in atmospheric pressure air on the distribution of the surface potential of epitaxial HgCdTe

    NASA Astrophysics Data System (ADS)

    Novikov, V. A.; Grigoryev, D. V.; Bezrodnyy, D. A.; Tarasenko, V. F.; Shulepov, M. A.; Dvoretsky, S. A.; Mikhailov, N. N.

    2016-03-01

    In this paper we present the results of our research of the impact of nanosecond volume discharge on the electronic properties of the near-surface region of epitaxial Hg1-x Cd x Te films. We show that the distribution of the surface potential and, as a consequence, the material composition of the individual crystal grains that form V-defects possess a complex structure and contain regions with elevated content of both mercury and cadmium. The volume discharge treatment of the film surface leads to a decrease of the mercury content in individual crystal grains compared to the bulk of Hg1-x Cd x Te epitaxial film. This indicates a higher mercury desorption rate from the V-defect region.

  10. Infrared and Raman spectra of ethylene trithiocarbonate complexes of some Zn(II), Cd(II) and Hg(II) halides

    NASA Astrophysics Data System (ADS)

    Contreras, J. Guillermo; Gnecco, Juan A.

    Coordination compounds of ethylene trithiocarbonate (ETTC) with some Zn(II), Cd(II) and Hg(II) halides have been prepared, characterized and their infrared and Raman spectra recorded. The i.r. spectra in the range 4000-400 cm -1 suggest that the organic ligand is bonded to the metal ions through its exocyclic sulphur atom, whereas the far-i.r. and Raman spectra show that the complexes of the type HgX 2(ETTC) (X = Cl, Br or I) possess a trans dimeric halogen-bridged structure. The Cd(II) and Zn(II) species are of the type MX 2(ETTC) 2 and they possess a pseudotetrahedral structure of C2υ symmetry.

  11. Simultaneous determination of Cu 2+, Zn 2+, Cd 2+, Hg 2+ and Pb 2+ by using second-derivative spectrophotometry method

    NASA Astrophysics Data System (ADS)

    Han, Yanyan; Li, Yan; Si, Wei; Wei, Dong; Yao, Zhenxing; Zheng, Xianpeng; Du, Bin; Wei, Qin

    2011-09-01

    A new method of simultaneous determination of Cu 2+, Zn 2+, Cd 2+, Hg 2+ and Pb 2+ is proposed here by using the second-derivative spectrophotometry method. In pH = 10.35 Borax-NaOH buffer, using meso-tetra (3-methoxyl-4-hydroxylphenyl) porphyrin ([T-(3-MO-4-HP)P]) as chromomeric reagent, micelle solution was formed after Tween-80 surfactant was added into the solution containing Cu 2+, Zn 2+, Cd 2+, Hg 2+ and Pb 2+ ions. The original absorption spectrum of the above complexes was obtained after heating in the boiling water for 25 min. The second-derivative absorption peaks of five metal-porphyrin complexes can be separated from the original absorption spectrum by using chemometric tool. In this way, Cu 2+, Zn 2+, Cd 2+, Hg 2+ and Pb 2+ ions can be determined simultaneously. Under the optimal conditions, the linear ranges of the calibration curve were 0-0.60, 0-0.60, 0-0.40, 0-0.80 and 0-0.48 μg mL -1 for Cu 2+, Zn 2+, Cd 2+, Hg 2+ and Pb 2+, respectively. The molar absorptivity of these color systems were 1.38 × 10 5, 1.01 × 10 5, 3.24 × 10 5, 1.07 × 10 5 and 1.29 × 10 5 L mol -1 cm -1. The method developed in this paper has advantages in selectivity, sensitivity, operation and can effectively resolve spectra overlapping problem. This method has been applied to determine the real samples with satisfactory results.

  12. Effects of hydrogen on majority carrier transport and minority carrier lifetimes in long wavelength infrared HgCdTe on Si

    SciTech Connect

    Boieriu, P.; Grein, C.H.; Velicu, S.; Garland, J.; Fulk, C.; Sivananthan, S.; Stoltz, A.; Bubulac, L.; Dinan, J.H.

    2006-02-06

    We present the results of using an electron cyclotron resonance (ECR) plasma to incorporate hydrogen into long wavelength infrared HgCdTe layers grown by molecular beam epitaxy. Both as-grown and annealed layers doped in situ with indium were hydrogenated. Secondary ion mass spectroscopy confirmed the incorporation of hydrogen. Hall and photoconductive lifetime measurements were used to assess the effects of the hydrogenation. Increases in the electron mobilities and minority carrier lifetimes were observed for almost all ECR conditions.

  13. Numerical study of the intrinsic recombination carriers lifetime in extended short-wavelength infrared detector materials: A comparison between InGaAs and HgCdTe

    NASA Astrophysics Data System (ADS)

    Wen, Hanqing; Bellotti, Enrico

    2016-05-01

    Intrinsic carrier lifetime due to radiative and Auger recombination in HgCdTe and strained InGaAs has been computed in the extended short-wavelength infrared (ESWIR) spectrum from 1.7 μm to 2.7 μm. Using the Green's function theory, both direct and phonon-assisted indirect Auger recombination rates as well as the radiative recombination rates are calculated for different cutoff wavelengths at 300 K with full band structures of the materials. In order to properly model the full band structures of strained InGaAs, an empirical pseudo-potential model for the alloy is fitted using the virtual crystal approximation with spin-orbit coupling included. The results showed that for InxGa1-xAs grown on InP substrate, the compressive strain, which presents in the film when the cutoff wavelength is longer than 1.7 μm, leads to decrease of Auger recombination rate and increase of radiative recombination rate. Since the dominant intrinsic recombination mechanism in this spectral range is radiative recombination, the overall intrinsic carrier lifetime in the strained InGaAs alloys is shorter than that in the relaxed material. When compared to the relaxed HgCdTe, both relaxed and compressively strained InGaAs alloys show shorter intrinsic carrier lifetime at the same cutoff wavelength in room temperature which confirms the potential advantage of HgCdTe as wide-band infrared detector material. While HgCdTe offers superior performance, ultimately the material of choice for ESWIR application will also depend on material quality and cost.

  14. Modeling of electron energy spectra and mobilities in semi-metallic Hg{sub 1−x}Cd{sub x}Te quantum wells

    SciTech Connect

    Melezhik, E. O. Gumenjuk-Sichevska, J. V.; Sizov, F. F.

    2015-11-21

    Electron mobility, energy spectra, and intrinsic carrier concentrations in the n-type Hg{sub 0.32}Cd{sub 0.68}Te/Hg{sub 1−x}Cd{sub x}Te/Hg{sub 0.32}Cd{sub 0.68}Te quantum well (QW) in semi-metallic state are numerically modeled. Energy spectra and wave functions were calculated in the framework of the 8-band k-p Hamiltonian. In our model, electron scattering on longitudinal optical phonons, charged impurities, and holes has been taken into account, and the mobility has been calculated by an iterative solution of the Boltzmann transport equation. Our results show that the increase of the electron concentration in the well enhances the screening of the 2D electron gas, decreases the hole concentration, and can ultimately lead to a high electron mobility at liquid nitrogen temperatures. The increase of the electron concentration in the QW could be achieved in situ by delta-doping of barriers or by applying the top-gate potential. Our modeling has shown that for low molar composition x the concentration of holes in the well is high in a wide range of electron concentrations; in this case, the purity of samples does not significantly influence the electron mobility. These results are important in the context of establishing optimal parameters for the fabrication of high-mobility Hg{sub 1−x}Cd{sub x}Te quantum wells able to operate at liquid nitrogen temperature and thus suitable for applications in terahertz detectors.

  15. Magnetotransmission of unpolarized infrared radiation in Hg1 - x Cd x Cr2Se4 (0 ≤ x ≤ 1) single crystals studied using the voigt geometry

    NASA Astrophysics Data System (ADS)

    Sukhorukov, Yu. P.; Telegin, A. V.; Bebenin, N. G.; Patrakov, E. I.; Naumov, S. V.; Fedorov, V. A.; Menshchikova, T. K.

    2013-11-01

    The features characterizing the behavior of magnetotransmission in Hg1 - x Cd x Cr2Se4 single crystals are studied using natural light in the infrared spectral range. The relation between the changes in the magneto-optical properties and in the electron band structure is found. It is shown that the most significant changes in the magnetotransmission spectrum and the band structure occur within the 0.1 < x < 0.25 range.

  16. Simultaneous determination of Cu2+, Zn2+, Cd2+, Hg2+ and Pb2+ by using second-derivative spectrophotometry method.

    PubMed

    Han, Yanyan; Li, Yan; Si, Wei; Wei, Dong; Yao, Zhenxing; Zheng, Xianpeng; Du, Bin; Wei, Qin

    2011-09-01

    A new method of simultaneous determination of Cu2+, Zn2+, Cd2+, Hg2+ and Pb2+ is proposed here by using the second-derivative spectrophotometry method. In pH=10.35 Borax-NaOH buffer, using meso-tetra (3-methoxyl-4-hydroxylphenyl) porphyrin ([T-(3-MO-4-HP)P]) as chromomeric reagent, micelle solution was formed after Tween-80 surfactant was added into the solution containing Cu2+, Zn2+, Cd2+, Hg2+ and Pb2+ ions. The original absorption spectrum of the above complexes was obtained after heating in the boiling water for 25 min. The second-derivative absorption peaks of five metal-porphyrin complexes can be separated from the original absorption spectrum by using chemometric tool. In this way, Cu2+, Zn2+, Cd2+, Hg2+ and Pb2+ ions can be determined simultaneously. Under the optimal conditions, the linear ranges of the calibration curve were 0-0.60, 0-0.60, 0-0.40, 0-0.80 and 0-0.48 μg mL(-1) for Cu2+, Zn2+, Cd2+, Hg2+ and Pb2+, respectively. The molar absorptivity of these color systems were 1.38×10(5), 1.01×10(5), 3.24×10(5), 1.07×10(5) and 1.29×10(5)Lmol(-1)cm(-1). The method developed in this paper has advantages in selectivity, sensitivity, operation and can effectively resolve spectra overlapping problem. This method has been applied to determine the real samples with satisfactory results. PMID:21664176

  17. Development of Hg1-xCd xSe for 3rd Generation Focal Plane Arrays using Molecular Beam Epitaxy

    NASA Astrophysics Data System (ADS)

    Doyle, Kevin

    Hg1-xCd xSe grown on nearly lattice-matched GaSb substrates could serve as a new basis for infrared detector development. The preparation of the GaSb substrate surfaces and the growth of ZnTe1-xSex buffer layers via molecular beam epitaxy were investigated. ZnTe and ZnTe1- xSex layers were grown on GaSb substrates prepared with atomic hydrogen cleaning. The lattice constant of ZnTe1-xSex was tuned by controlling the ratio of Se/Te beam equivalent pressures, and ZnTe1- xSex was found to be lattice-matched to GaSb for x=0.01. Confocal photoluminescence measurements indicated that ZnTe0.99Se0.01 layers grown on GaSb have dislocation densities ˜7x104 cm-2, indicating that ZnTe0.99Se0.01/GaSb provides a high quality substrate with low dislocation densities for Hg1-xCd xSe growth. In parallel with the ZnTe1-xSe x/GaSb substrate development, the growth of Hg1- xCdxSe was studied via molecular beam epitaxy on GaSb substrates and Si substrates with ZnTe buffer layers. Growth rate, composition, and surface quality were evaluated for different growth parameters. Two sources of Se were used, an effusion cell loaded with 5N purity source material that produced a predominantly Se6 flux, and a disassociation source loaded with 6N purity source material that could produce either a predominantly Se2 or a predominantly Se6 flux. For a given substrate temperature and Hg overpressure, the growth rate was controlled by the Se flux and the x-value was controlled by the Cd/Se flux ratio. Growths under Hg-deficient conditions produced "needle" and "diamond"-shaped defects. The optimal substrate temperature was found to be 90- 110°C for growths performed with a predominantly Se 6 flux. from the effusion cell and a standard Hg flux of 2.5x10 -4 Torr. Previous studies of nominally undoped Hg1-xCd xSe samples have reported large background electron concentrations ranging from 1017-1018 cm-3 at temperatures as low as 4K. In the study reported here, the use of Se source material with 6N

  18. Determination of charge-carrier diffusion length in the photosensing layer of HgCdTe n-on-p photovoltaic infrared focal plane array detectors

    SciTech Connect

    Vishnyakov, A. V.; Stuchinsky, V. A. Brunev, D. V.; Zverev, A. V.; Dvoretsky, S. A.

    2014-03-03

    In the present paper, we propose a method for evaluating the bulk diffusion length of minority charge carriers in the photosensing layer of photovoltaic focal plane array (FPA) photodetectors. The method is based on scanning a strip-shaped illumination spot with one of the detector diodes at a low level of photocurrents j{sub ph} being registered; such scanning provides data for subsequent analysis of measured spot-scan profiles within a simple diffusion model. The asymptotic behavior of the effective (at j{sub ph} ≠ 0) charge-carrier diffusion length l{sub d} {sub eff} as a function of j{sub ph} for j{sub ph} → 0 inferred from our experimental data proved to be consistent with the behavior of l{sub d} {sub eff} vs j{sub ph} as predicted by the model, while the obtained values of the bulk diffusion length of minority carriers (electrons) in the p-HgCdTe film of investigated HgCdTe n-on-p FPA photodetectors were found to be in a good agreement with the previously reported carrier diffusion-length values for HgCdTe.

  19. Growth, Characterization and Theoretical Study of a Novel Organometallic Nonlinear Optical Crystal: CdHg(SCN)4(C2H5NO)2

    NASA Astrophysics Data System (ADS)

    Liu, X. T.; Wang, X. Q.; Lin, X. J.; Sun, G. H.; Zhang, G. H.; Xu, D.

    2012-06-01

    A novel potentially useful second harmonic generation (SHG) organometallic nonlinear optical (NLO) crystal: cadmium mercury thiocyanate bis( N-methylformamide), CdHg(SCN)4(C2H5NO)2 (CMTN), has been prepared, and large high-optical-quality single crystals with dimensions up to 30 ×27×9 mm3 have been grown by the temperature-lowering method. Its structural, physicochemical and optical properties are characterized by elemental analyses, X-ray powder diffraction, Fourier transform infrared and Raman spectroscopy, thermal analysis, powder SHG measurements and UV/Vis/NIR transmission. The specific heat has been determined to be 515.5 J mol-1 K-1 at 300 K. CMTN possesses good physicochemical stability up to 128.5∘C, exhibits powder SHG efficiencies 0.8 times that of urea and its UV transparency cutoff is 358 nm. By the use of the DFT/B3LYP/6-31G(d) method, the microscopic second order NLO behavior of CMTN has been investigated by computing the first-order hyperpolarizability together with that of CdHg(SCN)4 (CMTC) and CdHg(SCN)4(C3H8O2) (CMTG) crystals. The results have been explained based on their crystal structures.

  20. ZnS, CdS and HgS nanoparticles via alkyl-phenyl dithiocarbamate complexes as single source precursors.

    PubMed

    Onwudiwe, Damian C; Ajibade, Peter A

    2011-01-01

    The synthesis of II-VI semiconductor nanoparticles obtained by the thermolysis of certain group 12 metal complexes as precursors is reported. Thermogravimetric analysis of the single source precursors showed sharp decomposition leading to their respective metal sulfides. The structural and optical properties of the prepared nanoparticles were characterized by means of X-ray diffraction (XRD), transmission electron microscopy (TEM), scanning electron microscopy (SEM) UV-Vis and photoluminescence spectroscopy. The X-ray diffraction pattern showed that the prepared ZnS nanoparticles have a cubic sphalerite structure; the CdS indicates a hexagonal phase and the HgS show the presence of metacinnabar phase. The TEM image demonstrates that the ZnS nanoparticles are dot-shaped, the CdS and the HgS clearly showed a rice and spherical morphology respectively. The UV-Vis spectra exhibited a blue-shift with respect to that of the bulk samples which is attributed to the quantum size effect. The band gap of the samples have been calculated from absorption spectra and werefound to be about 4.33 eV (286 nm), 2.91 eV (426 nm) and 4.27 eV (290 nm) for the ZnS, CdS and HgS samples respectively. PMID:22016607

  1. ZnS, CdS and HgS Nanoparticles via Alkyl-Phenyl Dithiocarbamate Complexes as Single Source Precursors

    PubMed Central

    Onwudiwe, Damian C.; Ajibade, Peter A.

    2011-01-01

    The synthesis of II-VI semiconductor nanoparticles obtained by the thermolysis of certain group 12 metal complexes as precursors is reported. Thermogravimetric analysis of the single source precursors showed sharp decomposition leading to their respective metal sulfides. The structural and optical properties of the prepared nanoparticles were characterized by means of X-ray diffraction (XRD), transmission electron microscopy (TEM), scanning electron microscopy (SEM) UV-Vis and photoluminescence spectroscopy. The X-ray diffraction pattern showed that the prepared ZnS nanoparticles have a cubic sphalerite structure; the CdS indicates a hexagonal phase and the HgS show the presence of metacinnabar phase. The TEM image demonstrates that the ZnS nanoparticles are dot-shaped, the CdS and the HgS clearly showed a rice and spherical morphology respectively. The UV-Vis spectra exhibited a blue-shift with respect to that of the bulk samples which is attributed to the quantum size effect. The band gap of the samples have been calculated from absorption spectra and werefound to be about 4.33 eV (286 nm), 2.91 eV (426 nm) and 4.27 eV (290 nm) for the ZnS, CdS and HgS samples respectively. PMID:22016607

  2. Nucleation and growth of surfactant-passivated CdS and HgS nanoparticles: Time-dependent absorption and luminescence profiles.

    PubMed

    Mehta, S K; Kumar, Sanjay; Chaudhary, Savita; Bhasin, K K

    2010-01-01

    In this study, we have monitored the formation of CdS and HgS nanoparticles (NPs) using a precipitation method in the presence of surface-active agents. Three surfactants were tested to analyze the dependence of various parameters such as size, growth rate, photoluminescence (PL) emission and polydispersity of NPs on surfactant structure. Optical absorption spectroscopy was mainly used to estimate the optical bandgap and the size of NPs. The surfactant-induced quenching of PL intensity was found to be consistent with the different tendencies of the surfactants to act as Lewis acids towards these surfaces. The time-evolution of the absorbance suggested that the nucleation and growth rates markedly vary in a first-order fashion w.r.t. Cd(2+) and Hg(2+) salt concentration in excess of sulfide ions. The differences in the stabilization ability of the surfactants are discussed in reference to their structure-dependent adsorption behavior onto the particles. The comparative aspects of the different properties of CdS and HgS NPs prepared with identical methodology are presented in terms of metal cation-surfactant interactions. Changes in UV-vis and PL spectra during nucleation and growth of NPs were used to establish the possible mechanisms for the adsorption of surfactant molecules on the particle surface to restrict the unlimited growth. PMID:20648377

  3. Opto-electronic Properties of Mid-Wavelength: n Type II InAs/InAs1-x Sb x and Hg1-x Cd x Te

    NASA Astrophysics Data System (ADS)

    De Wames, Roger E.

    2016-06-01

    There is significant interest in mid-wavelength type II strained layer superlattices (SLSs) and HgCdTe material systems for background limited performance, operating at significantly higher temperature, T ≥ 150 K, than InSb, T ≈ 80-90 K. A precise knowledge of the electronic and optical properties of these materials is desirable since they determine detector performance and are needed for input parameters in self-consistent physics-based predictive models. Recently, data on the optical absorption coefficient, and the hole minority carrier lifetime has become available, suggesting that in the extrinsic region the limiting recombination processes in mid-wavelength type II Ga-free SLSs are radiative and Shockley-Read-Hall (SRH). These findings provide the opportunity for comparisons with mid-wavelength HgCdTe. The comparisons show that the radiative recombination coefficients are similar; however, the SRH lifetime limited to 9 μs for the SLS implies that the dark current density is expected to be limited by bulk generation-recombination (G-R) SRH processes for temperatures below 160 K; hence requiring heterojunction designs to suppress the G-R dark currents and be diffusion limited. Mid-wavelength infrared HgCdTe photodiodes are shallow p+n photovoltaic devices and because of the very long SRH hole lifetime are diffusion radiatively limited photodiodes down to 80 K.

  4. Preparation of cross-linked magnetic chitosan-phenylthiourea resin for adsorption of Hg(II), Cd(II) and Zn(II) ions from aqueous solutions.

    PubMed

    Monier, M; Abdel-Latif, D A

    2012-03-30

    In this study, cross-linked magnetic chitosan-phenylthiourea (CSTU) resin were prepared and characterized by means of FTIR, (1)H NMR, SEM high-angle X-ray diffraction (XRD), magnetic properties and thermogravimetric analysis (TGA). The prepared resin were used to investigate the adsorption properties of Hg(II), Cd(II) and Zn(II) metal ions in an aqueous solution. The extent of adsorption was investigated as a function of pH and the metal ion removal reached maximum at pH 5.0. Also, the kinetic and thermodynamic parameters of the adsorption process were estimated. These data indicated that the adsorption process is exothermic and followed the pseudo-second-order kinetics. Equilibrium studies showed that the data of Hg(II), Cd(II) and Zn(II) adsorption followed the Langmuir model. The maximum adsorption capacities for Hg(II), Cd(II) and Zn(II) were estimated to be 135 ± 3, 120 ± 1 and 52 ± 1 mg/g, which demonstrated the high adsorption efficiency of CSTU toward the studied metal ions. PMID:22277339

  5. Opto-electronic Properties of Mid-Wavelength: n Type II InAs/InAs1- x Sb x and Hg1- x Cd x Te

    NASA Astrophysics Data System (ADS)

    De Wames, Roger E.

    2016-09-01

    There is significant interest in mid-wavelength type II strained layer superlattices (SLSs) and HgCdTe material systems for background limited performance, operating at significantly higher temperature, T ≥ 150 K, than InSb, T ≈ 80-90 K. A precise knowledge of the electronic and optical properties of these materials is desirable since they determine detector performance and are needed for input parameters in self-consistent physics-based predictive models. Recently, data on the optical absorption coefficient, and the hole minority carrier lifetime has become available, suggesting that in the extrinsic region the limiting recombination processes in mid-wavelength type II Ga-free SLSs are radiative and Shockley-Read-Hall (SRH). These findings provide the opportunity for comparisons with mid-wavelength HgCdTe. The comparisons show that the radiative recombination coefficients are similar; however, the SRH lifetime limited to 9 μs for the SLS implies that the dark current density is expected to be limited by bulk generation-recombination (G-R) SRH processes for temperatures below 160 K; hence requiring heterojunction designs to suppress the G-R dark currents and be diffusion limited. Mid-wavelength infrared HgCdTe photodiodes are shallow p+n photovoltaic devices and because of the very long SRH hole lifetime are diffusion radiatively limited photodiodes down to 80 K.

  6. Synthesis, characterization, DFT and biological studies of isatinpicolinohydrazone and its Zn(II), Cd(II) and Hg(II) complexes

    NASA Astrophysics Data System (ADS)

    El-Gammal, O. A.; Rakha, T. H.; Metwally, H. M.; Abu El-Reash, G. M.

    2014-06-01

    Isatinpicolinohydrazone (H2IPH) and its Zn(II), Cd(II) and Hg(II) complexes have been synthesized and investigated using physicochemical techniques viz. IR, 1H NMR, 13C NMR, UV-Vis spectrometric methods and magnetic moment measurements. The investigation revealed that H2IPH acts as binegative tetradentate in Zn(II), neutral tridentate in Cd(II) and as neutral bidentate towards Hg(II) complex. Octahedral geometry is proposed for all complexes. The bond length, bond angle, chemical reactivity, energy components (kcal/mol), binding energy (kcal/mol) and dipole moment (Debyes) for all the title compounds were evaluated by DFT and also MEP for the ligand is shown. Theoretical infrared intensities of H2IPH and also the theoretical electronic spectra of the ligand and its complexes were calculated. The thermal behavior and the kinetic parameters of degradation were determined using Coats-Redfern and Horowitz-Metzger methods. The in vitro antibacterial studies of the complexes proved them as growth inhibiting agents. The DDPH antioxidant of the compounds have been screened. Antitumor activity, carried out in vitro on human mammary gland (breast) MCF7, have shown that Hg(II) complex exhibited potent activity followed by Zn(II), Cd(II) complexes and the ligand.

  7. Low-energy electron elastic scattering from Mn, Cu, Zn, Ni, Ag, and Cd atoms

    SciTech Connect

    Felfli, Z.; Msezane, A. Z.; Sokolovski, D.

    2011-05-15

    Electron elastic total cross sections (TCSs) for ground and excited Mn, Cu, Zn, Ni, Ag, and Cd atoms have been investigated in the electron-impact energy range 0 {<=}E{<=} 1 eV. The near-threshold TCSs for both the ground and excited states of these atoms are found to be characterized by Ramsauer-Townsend minima, shape resonances, and extremely sharp resonances corresponding to the formation of stable bound negative ions. The recently developed Regge-pole methodology where the crucial electron-electron correlations are embedded is employed for the calculations. From close scrutiny of the imaginary parts of the complex angular momenta, we conclude that these atoms form stable weakly bound ground and excited negative ions as Regge resonances through slow electron collisions. The extracted electron binding energies from the elastic TCSs of these atoms are contrasted with the available experimental and theoretical values.

  8. Metal arsonate polymers of Cd, Zn, Ag and Pb supported by 4-aminophenylarsonic acid

    SciTech Connect

    Lesikar-Parrish, Leslie A.; Neilson, Robert H.; Richards, Anne F.

    2013-02-15

    The coordination preferences of 4-aminophenylarsonic acid, 4-NH{sub 2}C{sub 6}H{sub 4}AsO{sub 3}H{sub 2}, (p-arsanilic acid) with CdCl{sub 2}{center_dot}2.5H{sub 2}O, ZnCl{sub 2}, Ag(SO{sub 3}CF{sub 3}) and Pb(NO{sub 3}){sub 2} have been investigated affording five new metal arsonate polymers. The reaction between 4-aminophenylarsonic acid and CdCl{sub 2}{center_dot}2.5H{sub 2}O resulted in a one-dimensional polymer, [{l_brace}Cd(4-NH{sub 3}C{sub 6}H{sub 4}AsO{sub 3}H)(Cl){sub 2}{r_brace}(H{sub 2}O){sub 2}]{sub n}, 1, in which the polymeric chain is propagated by bridging chlorides. Exchange of CdCl{sub 2} for ZnCl{sub 2} afforded [{l_brace}Zn{sub 2}(4-NH{sub 3}C{sub 6}H{sub 4}AsO{sub 3})(Cl){sub 2}{r_brace}(H{sub 2}O){sub 2}(Cl)]{sub n}, 2, featuring interlinked 6- and 8-membered [Zn-O-As] ring systems. The reaction of Ag(SO{sub 3}CF{sub 3}) with 4-aminophenylarsonic acid, afforded polymeric 3, [Ag(4-NH{sub 2}C{sub 6}H{sub 4}AsO{sub 3}H)(4-NH{sub 2}C{sub 6}H{sub 4}AsO{sub 3}H{sub 2})]{sub n} where coordination of the amino group to the silver center is observed and [{l_brace}Ag{sub 2}(4-NH{sub 3}C{sub 6}H{sub 4}AsO{sub 3}H)(4-NH{sub 3}C{sub 6}H{sub 4}AsO{sub 3})({mu}2-SO{sub 3}CF{sub 3}){sub 2}{r_brace}(SO{sub 3}CF{sub 3}){sub 2}]{sub n}, 4. By comparison, the reaction of p-arsanilic acid with Pb(NO{sub 3}){sub 2} yielded a polymeric chain [Pb(4-NH{sub 3}C{sub 6}H{sub 4}AsO{sub 3}H)(NO{sub 3}){sub 2}]{sub n}, 5 of similar topology to 1. The structures of 1-5 have been indiscriminately characterized by single crystal X-ray diffraction and their composition supported by relevant spectroscopic techniques. A comparison of the structural features of these polymers is used to determine the coordination preference of the ligand and factors influencing structural motifs, for example, the role of the anion. - Graphical abstract: The reaction of 4-aminophenylarsonic acid, 4-NH{sub 2}C{sub 6}H{sub 4}AsO{sub 3}H{sub 2}, with cadmium, zinc, silver, and lead have resulted in

  9. Miniaturized imaging spectrometer based on Fabry-Perot MOEMS filters and HgCdTe infrared focal plane arrays

    NASA Astrophysics Data System (ADS)

    Velicu, S.; Buurma, C.; Bergeson, J. D.; Kim, Tae Sung; Kubby, J.; Gupta, N.

    2014-05-01

    Imaging spectrometry can be utilized in the midwave infrared (MWIR) and long wave infrared (LWIR) bands to detect, identify and map complex chemical agents based on their rotational and vibrational emission spectra. Hyperspectral datasets are typically obtained using grating or Fourier transform spectrometers to separate the incoming light into spectral bands. At present, these spectrometers are large, cumbersome, slow and expensive, and their resolution is limited by bulky mechanical components such as mirrors and gratings. As such, low-cost, miniaturized imaging spectrometers are of great interest. Microfabrication of micro-electro-mechanicalsystems (MEMS)-based components opens the door for producing low-cost, reliable optical systems. We present here our work on developing a miniaturized IR imaging spectrometer by coupling a mercury cadmium telluride (HgCdTe)-based infrared focal plane array (FPA) with a MEMS-based Fabry-Perot filter (FPF). The two membranes are fabricated from silicon-oninsulator (SOI) wafers using bulk micromachining technology. The fixed membrane is a standard silicon membrane, fabricated using back etching processes. The movable membrane is implemented as an X-beam structure to improve mechanical stability. The geometries of the distributed Bragg reflector (DBR)-based tunable FPFs are modeled to achieve the desired spectral resolution and wavelength range. Additionally, acceptable fabrication tolerances are determined by modeling the spectral performance of the FPFs as a function of DBR surface roughness and membrane curvature. These fabrication non-idealities are then mitigated by developing an optimized DBR process flow yielding high-performance FPF cavities. Zinc Sulfide (ZnS) and Germanium (Ge) are chosen as the low and the high index materials, respectively, and are deposited using an electron beam process. Simulations are presented showing the impact of these changes and non-idealities in both a device and systems level.

  10. Effect of surface fields on the dynamic resistance of planar HgCdTe mid-wavelength infrared photodiodes

    SciTech Connect

    He, Kai; Wang, Xi; Zhang, Peng; Chen, Yi-Yu; Zhou, Song-Min; Xie, Xiao-Hui; Lin, Chun Ye, Zhen-Hua; Wang, Jian-Xin; Zhang, Qin-Yao; Li, Yang

    2015-05-28

    This work investigates the effect of surface fields on the dynamic resistance of a planar HgCdTe mid-wavelength infrared photodiode from both theoretical and experimental aspects, considering a gated n-on-p diode with the surface potential of its p-region modulated. Theoretical models of the surface leakage current are developed, where the surface tunnelling current in the case of accumulation is expressed by modifying the formulation of bulk tunnelling currents, and the surface channel current for strong inversion is simulated with a transmission line method. Experimental data from the fabricated devices show a flat-band voltage of V{sub FB}=−5.7 V by capacitance-voltage measurement, and then the physical parameters for bulk properties are determined from the resistance-voltage characteristics of the diode working at a flat-band gate voltage. With proper values of the modeling parameters such as surface trap density and channel electron mobility, the theoretical R{sub 0}A product and corresponding dark current calculated from the proposed model as functions of the gate voltage V{sub g} demonstrate good consistency with the measured values. The R{sub 0}A product remarkably degenerates when V{sub g} is far below or above V{sub FB} because of the surface tunnelling current or channel current, respectively; and it attains the maximum value of 5.7×10{sup 7} Ω · cm{sup 2} around the transition between surface depletion and weak inversion when V{sub g}≈−4 V, which might result from reduced generation-recombination current.

  11. Linear mode photon counting from visible to MWIR with HgCdTe avalanche photodiode focal plane arrays

    NASA Astrophysics Data System (ADS)

    Sullivan, William; Beck, Jeffrey; Scritchfield, Richard; Skokan, Mark; Mitra, Pradip; Sun, Xiaoli; Abshire, James; Carpenter, Darren; Lane, Barry

    2015-05-01

    Results of characterization data on linear mode photon counting (LMPC) HgCdTe electron-initiated avalanche photodiode (e-APD)focal plane arrays (FPA) are presented that reveal an improved understanding and the growing maturity of the technology. The first successful 2x8 LMPC FPA was fabricated in 2010 [1]. Since then a process validation lot of 2x8 arrays was fabricated. Five arrays from this lot were characterized that replicated the previous 2x8 LMPC array performance. In addition, it was unambiguously verified that readout integrated circuit (ROIC) glow was responsible for most of the false event rate (FER) of the 2010 array. The application of a single layer metal blocking layer between the ROIC and the detector array and optimization of the ROIC biases reduced the FER by an order of magnitude. Photon detection efficiencies (PDEs) of greater than 50% were routinely demonstrated across 5 arrays, with one array reaching a PDE of 70%. High resolution pixel-surface spot scans were performed and the junction diameters of the diodes were measured. The junction diameter was decreased from 31 μm to 25 μm resulting in a 2x increase in E-APD gain from 470 on the 2010 array to 1100 on one of the 2013 FPAs. Mean single photon signal to noise ratios of >12 were demonstrated at excess noise factors of 1.2-1.3. NASA Goddard Space Flight Center (GSFC) performed measurements on the delivered FPA that verified the PDE and FER data.

  12. A highly sensitive multi-element HgCdTe e-APD detector for IPDA lidar applications

    NASA Astrophysics Data System (ADS)

    Beck, Jeff; McCurdy, James; Skokan, Mark; Kamilar, Chris; Scritchfield, Richard; Welch, Terry; Mitra, Pradip; Sun, Xiaoli; Abshire, James; Reiff, Kirk

    2013-05-01

    A 16 element HgCdTe e-APD detector has been developed for lidar receivers that has significant improvements in sensitivity in the spectral range from < 1μm to 4 μm. A demonstration detector consisting of a 4x4 APD detector array, with 80 μm square elements, a custom CMOS readout integrated circuit (ROIC), a closed cycle cooler-Dewar, and support electronics has been designed, fabricated, and tested. The custom ROIC design provides > 6 MHz bandwidth with low noise and 21 selectable gains. Ninety-six arrays were fabricated with 69% of the arrays meeting the dark current spec in the center 4 pixels at 10 V bias where the APD gain was expected to be around 150. Measurements to 12 V on one array showed APD gains of 654 with a gain normalized dark currents of 1.2 fA to 3.2 fA. The lowest dark current array showed a maximum dark current of 6.2 pA at 10 V and 77 K. The 4.4 μm cutoff detector was characterized at an operating temperature of 77K with a 1.55 μm, 1μs wide, laser pulse. The photon conversion efficiency at unity gain was 91%. The mean measured APD gain at 77 K was 308 at 11V, the responsivity was 782 μV/pW, the average NEP was 1.04 fW/Hz1/2. The bandwidth was 6.8 MHz, and the broadband NEP was 2.97 pW. This detector offers a wide spectral response, dynamic range, and substantially improved sensitivity and lifetime for integrated path differential absorption (IPDA) lidar measurements of atmospheric trace gases such as CO2 and CH4.

  13. Heavy metal levels (Pb, Cd, Cr and Hg) in the adult general population near an urban solid waste incinerator.

    PubMed

    Zubero, Miren Begoña; Aurrekoetxea, Juan José; Ibarluzea, Jesús María; Arenaza, Maria Jesús; Rodríguez, Carlos; Sáenz, José Ramón

    2010-09-15

    In 2005 an urban solid waste incinerator (SWI) was commissioned in Bilbao (Basque Country, Spain). Serum and urine samples were collected from 95 and 107 volunteers in 2006 and 2008 respectively, of which 62 were repeats from the same individuals. Blood lead levels (BPb) were determined, as were the concentrations of cadmium (Cd), chromium (Cr) and mercury (Hg) in urine (UCd, UCr and UHg). The town of Alonsotegi and a borough of Bilbao (Altamira, Rekalde) were considered to be close, less than 2 km from the plant, and correspond to an urban environment with high traffic density. The areas of reference were a borough of Bilbao (Santutxu-Zurbaran), 5 km from the plant, also in an urban area with high traffic density, and a small town with little industrial activity and low traffic density (Balmaseda) 20 km from the plant; neither of these is downwind from the site with respect to prevailing winds. There was a significant correlation for BPb, r=0.63 (p<0.001), between the two surveys. However, there was no linear correlation for the other three metals (UCd, UCr and UHg), between the two sampling periods (p>0.05). Multiple linear regression models did not show increases over time of the levels of BPb, UCd, UCr and UHg in the areas close to the SWI compared to those of areas located further away, after adjusting for confounding variables. These results reinforce the hypothesis that populations near modern plants for solid waste incineration do not manifest increased levels of heavy metals. PMID:20659760

  14. Photocatalytic activity of CdS and Ag2S quantum dots deposited on poly(amidoamine) functionalized carbon nanotubes

    PubMed Central

    Neelgund, Gururaj M.; Oki, Aderemi

    2011-01-01

    Two novel ternary nanocatalysts, f-MWCNTs-CdS and f-MWCNTs-Ag2S were successfully constructed by covalent grafting of fourth generation (G4) hyperbranched, crosslinked poly(amidoamine) (PAMAM) to carboxylated multi-walled carbon nanotubes (MWCNTs-COOH) and subsequent deposition of CdS or Ag2S quantum dots (QDs). The structural transformation, surface potential, and morphology of functionalized MWCNTs (f-MWCNTs) and nanocatalysts were characterized by UV-vis spectrophotometer, Fourier transform infrared spectroscopy, powder X-ray diffraction, Raman spectroscopy, thermogravimetric analysis, scanning electron microscopy and energy dispersive spectroscopy. Transmission electron microscopy reveals the effective anchoring of QDs on f-MWCNTs. The catalytic activity of nanocatalysts was evaluated by photodegradation of methyl orange under illumination of UV light. The coupling of MWCNTs, PAMAM and CdS or Ag2S QDs significantly enhanced the catalytic efficiency of nanocatalysts. The rate constants for degradation of methyl orange in presence of nanocatalysts were calculated using the Langmuir-Hinshelwood model. Overall, the excellence in photodegradation was accomplished by hybridizing f-MWCNTs with CdS or Ag2S PMID:22267895

  15. Impact of a New Highly Sensitive HgCdTe Avalanche Photodiode Detector on Receiver Performance for the CO2 Sounder Lidar for the ASCENDS Mission

    NASA Astrophysics Data System (ADS)

    Sun, X.; Abshire, J. B.

    2013-12-01

    NASA Goddard Space Flight Center (GSFC) is currently developing a CO2 lidar as a candidate for the NASA's planned ASCENDS mission under the support of Earth Science Technology Office (ESTO) Instrument Incubator Program (IIP). As part of this work we have demonstrated new type of lower noise HgCdTe avalanche photodiode (APD) multi-element detector for the lidar receiver. This significantly improves the receiver sensitivity, lower the laser power, and reduce the receiver telescope size compared to InGaAs photomultiplier tubes (PMT) and APDs currently used. The HgCdTe APD arrays were designed and manufactured by DRS Technologies, Reconnaissance, Surveillance and Target Acquisition (RSTA) Division, which combines their mature HgCdTe APD detector in a hybrid package with a new custom cryogenic silicon preamplifier. The new detectors were specially designed for our airborne CO2 lidar and operate at ~ 77K inside a turn-key closed-cycle cooler. The detector has 80 μm square pixels in a 4x4 array, and >70% fill factor and was custom designed to match the optics of our airborne and eventually space-based CO2 lidar. The initial results of evaluating the detector at NASA GSFC showed the HgCdTe APD assembly has a quantum efficiency of ~90% near 1550-nm, >500 APD gain, 8-10 MHz electrical bandwidth, and an average noise equivalent power of <1fW/Hz1/2. The detector also has a much wider linear dynamic range than PMTs, since it operates in a linear analog mode and has variable gain. Given the wide range of surface reflectivities this is important for ASCENDS. The new detector also greatly improves our CO2 lidar's receiver sensitivity. Calculations show it enables us to reduce the laser transmitter power by half for the space borne instrument while staying with a conventional reasonably sized (~1.2 m) diameter receiver telescope. We will show analysis and laboratory test results of the CO2 lidar performance using a receiver with this new detector. We are also funded by NASA ESTO

  16. Long wave HgCdTe staring arrays at Sofradir: from 9 μm to 13+ μm cut-offs for high performance applications

    NASA Astrophysics Data System (ADS)

    Manissadjian, Alain; Tribolet, Philippe; Destefanis, Geeard; De Borniol, Eric

    2005-05-01

    Today, end users require Long Wave (LW) staring arrays to develop new compact IR cameras, and Very Long Wave (VLW) staring arrays to develop high performance applications with broadband detection up to more than 13μm. HgCdTe is the only available material to answer these needs with the same production line. Based on its HgCdTe Liquid Phase Epitaxy (LPE) process that has proven its maturity and reproducibility over the last thirteen years, with for example more than 14,000 288×4 IRFPAs already delivered worldwide, SOFRADIR has been offering for several years 320×256 LW detectors with a cut-off wavelength tuned between 9μm and 12μm depending on the required application. Based on that experience, two new LW HgCdTe products have been developed and are offered since beginning of 2005. For compact LW FLIRs, SOFRADIR offers the VENUS-LW: a higher resolution 25μm pitch 384×288 IDDCA with 0.5W micro cooler, with a cut-off between 9μm and 10μm for a spectral band pass fully satisfying the imagery requirements and for an operational temperature between 77K and 85K (thus enabling the use of a compact low power micro cooler). The manufacturing of this detector relies on the standard HgCdTe production process with the latest uniformity improvements. Following a similar approach and for VLW applications such as spectroscopy or broadband low flux applications, an improved HgCdTe material with optimized LPE and PhotoVoltaic (PV) detector processes, has been developed by SOFRADIR and LETI LIR for cut-off wavelengths above 12μm below 60K, enabling to have very low dark currents compatible with very low flux applications. These high performance low dark current detectors are offered with a standard 30μm pitch 320×256 readout circuit, integrated with a 1 Watt split Stirling cycle cooler enabling to reach the 50K range with very short cool down times. The performances of these new LW and VLW IR detectors are presented in this paper as well as the development trends for LW

  17. Synthesis and properties of new CdSe-AgI-As{sub 2}Se{sub 3} chalcogenide glasses

    SciTech Connect

    Kassem, M.; Le Coq, D.; Fourmentin, M.; Hindle, F.; Bokova, M.; Cuisset, A.; Masselin, P.; Bychkov, E.

    2011-02-15

    Research highlights: {yields} Determination of the glass-forming region in the pseudo-ternary CdSe-AgI-As{sub 2}Se{sub 3} system. {yields} Characterization of macroscopic properties of the new CdSe-AgI-As{sub 2}Se{sub 3} glasses. {yields} Far infrared transmission of chalcogenide glasses. {yields} Characterization of the total conductivity of CdSe-AgI-As{sub 2}Se{sub 3} glasses. -- Abstract: The glass-forming region in the pseudo-ternary CdSe-AgI-As{sub 2}Se{sub 3} system was determined. Measurements including differential scanning calorimetry (DSC), density, and X-ray diffraction were performed. The effect resulting from the addition of CdSe or AgI has been highlighted by examining three series of different base glasses. The characteristic temperatures of the glass samples, including glass transition (T{sub g}), crystallisation (T{sub x}), and melting (T{sub m}) temperatures are reported and used to calculate their {Delta}T = T{sub x} - T{sub g} and their Hruby, H{sub r} = (T{sub x} - T{sub g})/(T{sub m} - T{sub x}), criteria. Evolution of the total electrical conductivity {sigma} and the room temperature conductivity {sigma}{sub 298} was also studied. The terahertz transparency domain in the 50-600 cm{sup -1} region was pointed for different chalcogenide glasses (ChGs) and the potential of the THz spectroscopy was suggested to obtain structural information on ChGs.

  18. Synthesis, characterizations and anti-bacterial activities of pure and Ag doped CdO nanoparticles by chemical precipitation method

    NASA Astrophysics Data System (ADS)

    Sivakumar, S.; Venkatesan, A.; Soundhirarajan, P.; Khatiwada, Chandra Prasad

    2015-02-01

    In the present study, synthesized pure and Ag (1%, 2%, and 3%) doped Cadmium Oxide (CdO) nanoparticles by chemical precipitation method. Then, the synthesized products were characterized by thermo gravimetric-differential thermal analysis (TG-DTA), X-ray diffraction (XRD) analysis, Fourier transform infrared (FT-IR) spectroscopy, Ultra violet-Vis diffused reflectance spectroscopy (UV-Vis-DRS), Scanning electron microscopy (SEM), Energy dispersive X-rays (EDX) spectroscopy, and anti-bacterial activities, respectively. The transition temperatures and phase transitions of Cd(OH)2 to CdO at 400 °C was confirmed by TG-DTA analysis. The XRD patterns show the cubic shape and average particle sizes are 21, 40, 34, and 37 nm, respectively for pure and Ag doped samples. FT-IR study confirmed the presence of CdO and Ag at 677 and 459 cm-1, respectively. UV-Vis-DRS study shows the variation on direct and indirect band gaps. The surface morphologies and elemental analysis have been confirmed from SEM and with EDX. In addition, the synthesized products have been characterized by antibacterial activities against Gram-positive and negative bacteria. Further, the present investigation suggests that CdO nanoparticles have the great potential applications on various industrial and medical fields of research.

  19. Thermal stability of Ag, Al, Sn, Pb, and Hg films reinforced by 2D (C, Si) crystals and the formation of interfacial fluid states in them upon heating. MD experiment

    NASA Astrophysics Data System (ADS)

    Polukhin, V. A.; Kurbanova, E. D.

    2016-02-01

    Molecular dynamics simulation is used to study the thermal stability of the interfacial states of metallic Al, Ag, Sn, Pb, and Hg films (i.e., the structural elements of superconductor composites and conducting electrodes) reinforced by 2D graphene and silicene crystals upon heating up to disordering and to analyze the formation of nonautonomous fluid pseudophases in interfaces. The effect of perforation defects in reinforcing 2D-C and 2D-Si planes with passivated edge covalent bonds on the atomic dynamics is investigated. As compared to Al and Ag, the diffusion coefficients in Pd and Hg films increase monotonically with temperature during thermally activated disordering processes, the interatomic distances decrease, the sizes decrease, drops form, and their density profile grows along the normal. The coagulation of Pb and Hg drops is accompanied by a decrease in the contact angle, the reduction of the interface contact with graphene, and the enhancement of its corrugation (waviness).

  20. Frequency dependent electrical properties of nano-CdS/Ag junctions

    NASA Astrophysics Data System (ADS)

    Mohanta, D.; Choudhury, A.

    2005-05-01

    Polymer embedded cadmium sulfide nanoparticles/quantum dots were synthesized by a chemical route using polyvinyl alcohol (lmw) as the desired matrix. In an attempt to measure the electrical properties of nano-CdS/Ag samples, we propose that contribution from surface traps are mainly responsible in determining the I˜ V and C˜ V characteristics in high frequency ranges. To be specific, beyond 1.2 MHz, the carrier injection from the trap centers of the embedded quantum dots is ensured by large current establishment even at negative biasing condition of the junction. The unexpected nonlinear signature of C˜ V response is believed to be due to the fact that while trying to follow very high signal frequency (at least 10-3 of recombination frequency), there is complete abruptness in carrier trapping (charging) or/and detrapping (decay) in a given CdS nanoparticle assembly. The frequency dependent unique role of the trap carriers certainly find application in nanoelectronic devices at a desirable frequency of operation.

  1. Decorating CdTe QD-Embedded Mesoporous Silica Nanospheres with Ag NPs to Prevent Bacteria Invasion for Enhanced Anticounterfeit Applications.

    PubMed

    Gao, Yangyang; Dong, Qigeqi; Lan, Shi; Cai, Qian; Simalou, Oudjaniyobi; Zhang, Shiqi; Gao, Ge; Chokto, Harnoode; Dong, Alideertu

    2015-05-13

    Quantum dots (QDs) as potent candidates possess advantageous superiority in fluorescence imaging applications, but they are susceptible to the biological circumstances (e.g., bacterial environment), leading to fluorescence quenching or lose of fluorescent properties. In this work, CdTe QDs were embedded into mesoporous silica nanospheres (m-SiO2 NSs) for preventing QD agglomeration, and then CdTe QD-embedded m-SiO2 NSs (m-SiO2/CdTe NSs) were modified with Ag nanoparticles (Ag NPs) to prevent bacteria invasion for enhanced anticounterfeit applications. The m-SiO2 NSs, which serve as intermediate layers to combine CdTe QDs with Ag NPs, help us establish a highly fluorescent and long-term antibacterial system (i.e., m-SiO2/CdTe/Ag NSs). More importantly, CdTe QD-embedded m-SiO2 NSs showed fluorescence quenching when they encounter bacteria, which was avoided by attaching Ag NPs outside. Ag NPs are superior to CdTe QDs for preventing bacteria invasion because of the structure (well-dispersed Ag NPs), size (small diameter), and surface charge (positive zeta potentials) of Ag NPs. The plausible antibacterial mechanisms of m-SiO2/CdTe/Ag NSs toward both Gram-positive and Gram-negative bacteria were established. As for potential applications, m-SiO2/CdTe/Ag NSs were developed as fluorescent anticounterfeiting ink for enhanced imaging applications. PMID:25901940

  2. A metal exchange method for thiolate-protected tri-metal M1AgxAu24-x(SR)180 (M = Cd/Hg) nanoclusters

    NASA Astrophysics Data System (ADS)

    Yang, Sha; Wang, Shuxin; Jin, Shan; Chen, Shuang; Sheng, Hongting; Zhu, Manzhou

    2015-05-01

    We herein reported the first synthesis of tri-metallic M1AgxAu24-x(SR)180 (M = Cd/Hg) nanoclusters by a two-step metal exchange method. Optical spectra suggested that the second and third foreign metals could largely change the electronic structure of homogold Au25(SR)18- nanoclusters. This work also provides a novel way to find the doping site of some special metals (such as Cd), which can be done using silver as the isotope of gold.We herein reported the first synthesis of tri-metallic M1AgxAu24-x(SR)180 (M = Cd/Hg) nanoclusters by a two-step metal exchange method. Optical spectra suggested that the second and third foreign metals could largely change the electronic structure of homogold Au25(SR)18- nanoclusters. This work also provides a novel way to find the doping site of some special metals (such as Cd), which can be done using silver as the isotope of gold. Electronic supplementary information (ESI) available: Synthesis details and addition figures. See DOI: 10.1039/c5nr01965f

  3. Self-Assembled Templates of Aromatic Pentapeptides for Synthesis of CdS Quantum-Dots to Detect the Trace Amounts of Hg(2+) in Aqueous Solutions.

    PubMed

    Meng, Min; Dou, Yingying; Xu, Wenlong; Hao, Jingcheng

    2016-05-01

    Molecular self-assembly has become a popular tool to prepare nanomaterials with potential applications, such as ion-responsive detection of Hg(2+) in aqueous solutions. In this study, FFACD aromatic pentapeptides, whose N-terminuses were protected by carboxyl (Ac-FFACD) or a 9-fluorenylmethoxycarbonyl group (Fmoc-FFACD), were chosen as building blocks to produce nanostructures in solutions. Based on the preliminary determination of the critical aggregation concentration (CAC) of Ac-FFACD and Fmoc-FFACD aromatic pentapeptides in water, the order of magnitude of which is 10(-5) mol·L(-1), self-assembled spiral and networked nanowires can be easily obtained over a range of concentrations. These nanowires were characterized by transmission electron microscopy (TEM), scanning electron microscopy (SEM), and atomic force microscopy (AFM). The self-assembled spiral and networked nanowires were designed to be used as templates for preparing CdS quantum dots (QDs) in-situ at room temperature. The peptide-functionalized, nanowire-encapsulated CdS QDs can be used for rapid, sensitive, and selective detection of trace amounts of mercuric ions (Hg(2+)) in aqueous solutions. This method enables rapid, linear detection (the linear correlation coefficients are 0.9972 of ΔF = 257.09 + 3.58 cHg(2+) for Ac-FFACD and 0.9994 of ΔF = 48.13 + 32.96 cHg(2+) for Fmoc-FFACD) with the Hg(2+) limit of detection at 300.85 ng·L(-1) and 32.09 ng·L(-1) for Ac-FFACD and Fmoc-FFACD, respectively. The supramolecular, self-assembled nanowires, fabricated from the two aromatic pentapeptides and having encapsulated QDs, exhibit superior properties attributable to the large loading capacity and the coordination sites of these peptides with Hg(2+). These structures can serve as novel Hg(2+) sensors and have possible applications for detection of various targets in scientific and engineering systems. PMID:27086999

  4. Synthesis and structural characterization of dinuclear Cd2+, Hg2+ and Fe2+ complexes with neutral bi and tetradentate flexible pyrazole-based ligands

    NASA Astrophysics Data System (ADS)

    Beheshti, Azizolla; Lalegani, Arash; Behvandi, Fatemeh; Safaeiyan, Forough; Sarkarzadeh, Afsoon; Bruno, Giuseppe; Amiri Rudbari, Hadi

    2015-02-01

    Four new complexes of [Hg2Cl4(bpp)]n (1), [Hg2Cl4(tdmpp)] (2), [Cd2I4(tdmpp)] (3) and [Fe2Cl4(tdmpp)] (4) were prepared by using the neutral N-donor ligands 1,3-bis(3,5-dimethyl-1-pyrazolyl)propane (bpp) and 1,1,3,3-tetrakis(3,5-dimethyl-1-pyrazolyl)propane (tdmpp) with different flexibility and appropriate metal salts of Cd(II), Hg(II) and Fe(II) ions. These compounds were characterized by the infrared spectroscopy, elemental analysis and X-ray crystallography. Flexible ligands and non-covalent Csbnd H⋯Cl hydrogen bonds play a major role in the crystal packing of compounds 1, 2 and 4. In the two-dimensional non-covalent structure of 1, there are two distinctly different coordination modes for the mercury atoms. One mercury atom has pseudo-trigonal bipyramidal geometry and the other adopts a distorted tetrahedral environment. In the dinuclear structures of 2 and 4 the neutral molecules are linked together by the Csbnd H⋯Cl hydrogen bonds, forming an infinite one-dimensional zigzag chain structure. Compounds 2-4 are isostructural with each other.

  5. ROIC with on-chip sigma-delta AD converter for HgCdTe e-APD FPA

    NASA Astrophysics Data System (ADS)

    Chen, Guoqiang; Zhang, Junling; Wang, Pan; Zhou, Jie; Gao, Lei; Ding, Ruijun

    2013-10-01

    HgCdTe electron injection avalanche photodiodes (e-APDs) work at linear mode. A weak optical current signal is amplified orders of magnitude due to the internal avalanche mechanism and it has been demonstrated to be one of the most promising methods to focal-plane arrays (FPAs) for low-flux like hyper-spectral imaging and high-speed applications such as active imaging. This paper presents the design of a column-shared ADC for cooled e-APDs FPA. Designing a digital FPA requires fulfilling very stringent requirements in terms of power consumption, silicon area and speed. Among the various ADC architectures sigma-delta conversion is a promising solution for high-performance and medium size FPA such as 128×128. The performance of Sigma-delta ADC rather relies on the modulator structure which set over-sampling and noise shaping characteristics than on critical analog circuits. This makes them quite robust and flexible. A multistage noise shaping (MASH) 2-1 single bit architecture sigma-delta conversion with switched-capacitor circuits is designed for column-shared ADC, which is implanted in the GLOBALFOUNDRIES 0.35um CMOS process with 4-poly and 4-metal on the basis of a 100um pixel pitch. It operates under 3.3V supply and the output range of the quantizer is 2V. A quantization noise subtraction circuit in modulator is designed to subtract the quantization noise of first-stage modulator. The quantization noise of the modulator is shaped by a high-pass filter. The silicon area and power consumption are mainly determined by the decimation low pass filter. A cascaded integrator-comb (CIC) filter is designed as the digital decimator filter. CIC filter requires no multipliers and use limited storage thereby leading to more economical hardware implementation. The register word length of the filter in each stage is carefully dimensioned in order to minimize the required hardware. Furthermore, the digital filters operate with a reduced supply voltage to 1.5V. Simulation

  6. Distributions of dissolved trace metals (Cd, Cu, Mn, Pb, Ag) in the southeastern Atlantic and the Southern Ocean

    NASA Astrophysics Data System (ADS)

    Boye, M.; Wake, B. D.; Lopez Garcia, P.; Bown, J.; Baker, A. R.; Achterberg, E. P.

    2012-08-01

    Comprehensive synoptic datasets (surface water down to 4000 m) of dissolved cadmium (Cd), copper (Cu), manganese (Mn), lead (Pb) and silver (Ag) are presented along a section between 34° S and 57° S in the southeastern Atlantic Ocean and the Southern Ocean to the south off South Africa. The vertical distributions of Cu and Ag display nutrient-like profiles similar to silicic acid, and of Cd similar to phosphate. The distribution of Mn shows a subsurface maximum in the oxygen minimum zone, whereas Pb concentrations are rather invariable with depth. Dry deposition of aerosols is thought to be an important source of Pb to surface waters close to South Africa, and dry deposition and snowfall may have been significant sources of Cu and Mn at the higher latitudes. Furthermore, the advection of water masses enriched in trace metals following contact with continental margins appeared to be an important source of trace elements to the surface, intermediate and deep waters in the southeastern Atlantic Ocean and the Antarctic Circumpolar Current. Hydrothermal inputs may have formed a source of trace metals to the deep waters over the Bouvet Triple Junction ridge crest, as suggested by relatively enhanced dissolved Mn concentrations. The biological utilization of Cu and Ag was proportional to that of silicic acid across the section, suggesting that diatoms formed an important control over the removal of Cu and Ag from surface waters. However, uptake by dino- and nano-flagellates may have influenced the distribution of Cu and Ag in the surface waters of the subtropical Atlantic domain. Cadmium correlated strongly with phosphate (P), yielding lower Cd / P ratios in the subtropical surface waters where phosphate concentrations were below 0.95 μM. The greater depletion of Cd relative to P observed in the Weddell Gyre compared to the Antarctic Circumpolar Current could be due to increase Cd uptake induced by iron-limiting conditions in these high-nutrient-low-chlorophyll waters

  7. Distributions of dissolved trace metals (Cd, Cu, Mn, Pb, Ag) in the southeastern Atlantic and the Southern Ocean

    NASA Astrophysics Data System (ADS)

    Boye, M.; Wake, B. D.; Lopez Garcia, P.; Bown, J.; Baker, A. R.; Achterberg, E. P.

    2012-03-01

    Comprehensive synoptic datasets (surface water down to 4000 m) of dissolved cadmium (Cd), copper (Cu), manganese (Mn), lead (Pb) and silver (Ag) are presented along a section between 34° S and 57° S in the southeastern Atlantic Ocean and the Southern Ocean to the south off South Africa. The vertical distributions of Cu, Ag, and of Cd display nutrient-like profiles similar to silicic acid, and phosphate, respectively. The distribution of Mn shows a subsurface maximum in the oxygen minimum zone, whereas Pb concentrations are rather invariable with depth. Dry deposition of aerosols is thought to be an important source of Pb to surface waters close to South Africa, and dry deposition and snowfall may have been significant sources of Cu and Mn at the higher latitudes. Furthermore, the advection of water-masses enriched in trace metals following contact with continental margins appeared to be an important source of trace elements to the surface, intermediate and deep waters in the southeastern Atlantic Ocean and the Antarctic Circumpolar Current. Hydrothermal inputs appeared to have formed a source of trace metals to the deep waters over the Bouvet Triple Junction ridge crest, as suggested by relatively enhanced dissolved Mn concentrations. The biological utilization of Cu and Ag was proportional to that of silicic acid across the section, suggesting that diatoms formed an important control over the removal of Cu and Ag from surface waters. However uptake by dino- and nano-flagelattes may have influenced the distribution of Cu and Ag in the surface waters of the subtropical Atlantic domain. Cadmium correlated strongly with phosphate (P), yielding lower Cd/P ratios in the subtropical surface waters where phosphate concentrations were below 0.95 μM. The greater depletion of Cd relative to P observed in the Weddell Gyre compared to the Antarctic Circumpolar Current could be due to increase Cd-uptake induced by iron-limiting conditions in these High-Nutrient Low

  8. Efficient visible-light photocatalytic activity by band alignment in mesoporous ternary polyoxometalate-Ag2S-CdS semiconductors

    NASA Astrophysics Data System (ADS)

    Kornarakis, I.; Lykakis, I. N.; Vordos, N.; Armatas, G. S.

    2014-07-01

    Porous multicomponent semiconductor materials show improved photocatalytic performance due to the large and accessible pore surface area and high charge separation efficiency. Here we report the synthesis of well-ordered porous polyoxometalate (POM)-Ag2S-CdS hybrid mesostructures featuring a controllable composition and high photocatalytic activity via a two-step hard-templating and topotactic ion-exchange chemical process. Ag2S compounds and polyoxometalate cluster anions with different reduction potentials, such as PW12O403-, SiW12O404- and PMo12O403-, were employed as electron acceptors in these ternary heterojunction photocatalysts. Characterization by small-angle X-ray scattering, X-ray diffraction, transmission electron microscopy and N2 physisorption measurements showed hexagonal arrays of POM-Ag2S-CdS hybrid nanorods with large internal BET surface areas and uniform mesopores. The Keggin structure of the incorporated POM clusters was also verified by elemental X-ray spectroscopy microanalysis, infrared and diffuse-reflectance ultraviolet-visible spectroscopy. These new porous materials were implemented as visible-light-driven photocatalysts, displaying exceptional high activity in aerobic oxidation of various para-substituted benzyl alcohols to the corresponding carbonyl compounds. Our experiments show that the spatial separation of photogenerated electrons and holes at CdS through the potential gradient along the CdS-Ag2S-POM interfaces is responsible for the increased photocatalytic activity.Porous multicomponent semiconductor materials show improved photocatalytic performance due to the large and accessible pore surface area and high charge separation efficiency. Here we report the synthesis of well-ordered porous polyoxometalate (POM)-Ag2S-CdS hybrid mesostructures featuring a controllable composition and high photocatalytic activity via a two-step hard-templating and topotactic ion-exchange chemical process. Ag2S compounds and polyoxometalate cluster

  9. Testing WHAM-FTOX with laboratory toxicity data for mixtures of metals (Cu, Zn, Cd, Ag, Pb).

    PubMed

    Tipping, Edward; Lofts, Stephen

    2015-04-01

    The Windermere humic aqueous model using the toxicity function (WHAM-FTOX ) describes cation toxicity to aquatic organisms in terms of 1) accumulation by the organism of metabolically active protons and metals at reversible binding sites, and 2) differing toxic potencies of the bound cations. Cation accumulation (νi , in mol g(-1) ) is estimated through calculations with the WHAM chemical speciation model by assuming that organism binding sites can be represented by those of humic acid. Toxicity coefficients (αi ) are combined with νi to obtain the variable FTOX (= Σ αi νi ) which, between lower and upper thresholds (FTOX,LT , FTOX,UT ), is linearly related to toxic effect. Values of αi , FTOX,LT , and FTOX,LT are obtained by fitting toxicity data. Reasonable fits (72% of variance in toxic effect explained overall) were obtained for 4 large metal mixture acute toxicity experiments involving daphnids (Cu, Zn, Cd), lettuce (Cu, Zn, Ag), and trout (Zn, Cd, Pb). Strong nonadditive effects, most apparent in results for tests involving Cd, could be explained approximately by purely chemical competition for metal accumulation. Tentative interpretation of parameter values obtained from these and other experimental data suggests the following order of bound cation toxicity: H < Al < (Cu Zn Pb UO2 ) < (Cd Ag). Another trend is a strong increase in Cd toxicity relative to that of Zn as organism complexity increases (from bacteria to fish). PMID:25318827

  10. CD209 (DC-SIGN) -336A>G promoter polymorphism and severe acute respiratory syndrome in Hong Kong Chinese.

    PubMed

    Chan, Kelvin Yuen Kwong; Xu, Mei-Shu; Ching, Johannes Chi Yun; So, Thomas Man Kit; Lai, Sik-To; Chu, Chung-Ming; Yam, Loretta Y C; Wong, Andrew T Y; Chung, Pui Hong; Chan, Vera Sau Fong; Lin, Chen Lung Steve; Sham, Pak Chung; Leung, Gabriel M; Peiris, Joseph S M; Khoo, Ui-Soon

    2010-07-01

    CD209 (DC-SIGN) is an important C-type lectin which acts a receptor of many pathogens. The single nucleotide polymorphism (SNP) -336A>G in the CD209 promoter has been demonstrated to regulate promoter activity and to be associated with several important infectious diseases, such as human immunodeficiency virus-1 (HIV-1), Mycobacterium tuberculosis, and Dengue fever. CD209 facilitates severe acute respiratory syndrome (SARS)-coronavirus spike protein-bearing pseudotype driven infection of permissive cells in vitro. In keeping with previously published findings, our in vitro studies confirmed that this SNP modulates gene promoter activity. Genetic association analysis of this SNP with clinico-pathologic outcomes in 824 serologic confirmed SARS patients showed that the -336AG/GG genotype SARS patients was associated with lower standardized lactate-dehydrogenase (LDH) levels compared with the -336AA patients (p = 0.014, odds ratio = 0.40). High LDH levels are known to be an independent predictor for poor clinical outcome, probably related to tissue destruction from immune hyperactivity. Hence, SARS patients with the CD209 -336 AA genotype carry a 60% chance of having a poorer prognosis. This association is in keeping with the role of CD209 in modulating immune response to viral infection. The relevance of these findings for other infectious diseases and inflammatory conditions would be worth investigating. PMID:20359516

  11. A model for the trap-assisted tunneling mechanism in diffused n-p and implanted n(+)-p HgCdTe photodiodes

    NASA Technical Reports Server (NTRS)

    Rosenfeld, David; Bahir, Gad

    1992-01-01

    This paper presents a theoretical model for the trap-assisted tunneling process in diffused n-on-p and implanted n(+)-on-p HgCdTe photodiodes. The model describes the connection between the leakage current associated with the traps and the trap characteristics: concentration, energy level, and capture cross sections. It is observed that the above two types of diodes differ the voltage dependence of the trap-assisted tunneling current and dynamic resistance. The model takes this difference into account and offers an explanation of the phenomenon. The good fit between measured and calculated dc characteristics of the photodiodes supports the validity of the model.

  12. Mid-Wave HgCdTe FPA Based on P on N Technology: HOT Recent Developments. NETD: Dark Current and 1/f Noise Considerations

    NASA Astrophysics Data System (ADS)

    Kerlain, A.; Brunner, A.; Sam-Giao, D.; Pére-Laperne, N.; Rubaldo, L.; Destefanis, V.; Rochette, F.; Cervera, C.

    2016-09-01

    For high operating temperature applications, variation of noise equivalent differential temperature (NETD or NEDT) with temperature is the most relevant figure of merit. NETD(T) models with and without taking into account systemic 1/f noise contribution are presented and compared to recent developments made on P on N technology at Sofradir and CEA-LETI. We show that for mature middle wave infrared HgCdTe technology, no 1/f noise contribution up to 220 K is measured and the focal plane array operation is only limited by the mean performance value degradation, not by an increase of defects.

  13. Formation of acceptor centers under the action of redox media on the surface of Cd{sub x}Hg{sub 1-x}Te films

    SciTech Connect

    Varavin, V. S.; Sidorov, G. Yu.

    2009-12-15

    The effect of redox media on the formation of acceptor centers in the Cd{sub x}Hg{sub 1-x}Te films grown by molecular beam epitaxy on the GaAs (301) substrates is studied. When tested for long-term stability, the untreated n-type films do not change their parameters, whereas the treated films exhibit a decrease in the conductivity and the mobility of charge carriers by nearly two orders of magnitude. It is shown that, on the treatments, a source of acceptors is formed at the surface, and the acceptors are most likely mercury vacancies.

  14. Development of the HgCdTe Avalanche Photodiode Detectors and the Improvement in the CO2 Lidar Performance for the ASCENDS Mission

    NASA Astrophysics Data System (ADS)

    Sun, X.; Abshire, J. B.; Chen, J. R.; Ramanathan, A. K.; Mao, J.

    2015-12-01

    NASA Goddard Space Flight Center (GSFC) is developing the CO2 lidar as a candidate for the NASA's planned ASCENDS mission under the support of Earth Science Technology Office (ESTO) IIP and ATI-QRS programs. A new type of HgCdTe avalanche photodiode (APD) detector has been developed by the DRS Technologies under the IIP program. The new detectors achieved >70% quantum efficiency, including the effect of the fill factor, over the spectral range from 0.4 to 4.3 μm, which significantly improves the receiver performance of our CO2 lidar and enabled other remote sending measurements. The HgCdTe APD arrays have 80 μm square pixels in a 4x4 array along with a bank of 16 preamplifiers on the same chip carrier. Test results at both DRS and GSFC showed the HgCdTe APD array has achieved, an APD gain of 500-1000, 8-10 MHz electrical bandwidth, and an average noise equivalent power (NEP) of <0.5 fW/Hz1/2. It has demonstrated at least a 3 orders of magnitude dynamic range at a fixed APD gain setting. The gains of the APD and the preamplifier can also be adjusted to further extend the receiver dynamic range. During summer 2014 we successfully demonstrated airborne lidar measurements of column CO2 using one of these detectors. The Aerospace Corporation is currently building a 3U CubeSat with one of these detectors in a small closed-cycle cryocooler as the primary payload under the ESTO In-space Validation of Earth Science Technology (InVEST) program. The CubeSat is scheduled to be launched in late 2016 and will fly in a low Earth orbit and monitor the performance for at least a year. We have also updated the performance analysis of a space-based version of our CO2 lidar with the new HgCdTe APD detector. For the retrievals, a least-square-error method is used to fit the measured transmittances to a predetermined line shape function using 8 to 16 sampling wavelengths. The error in the derived total optical depth and the CO2 mixing ratio are estimated via the standard error

  15. Optical and magneto-optical effects in Hg1- x Cd x Cr2Se4 (0 ⩽ x ⩽ 1) single crystals

    NASA Astrophysics Data System (ADS)

    Sukhorukov, Yu. P.; Telegin, A. V.; Bebenin, N. G.; Zainullina, R. I.; Mostovshchikova, E. V.; Viglin, N. A.; Gan'shina, E. A.; Zykov, G. S.; Fedorov, V. A.; Menshchikova, T. K.; Buchkevich, A. A.

    2015-09-01

    The concentration, temperature, and magnetic-field dependences of the magnetoreflection and magnetotransmission of natural light in the infrared spectral range and the Kerr effect in single crystals of ferromagnetic Hg1- x Cd x Cr2Se4 (0 ⩽ x ⩽ 1) spinels have been studied. A relationship of the magneto-optical properties to the electronic band structure of spinels has been established. The most significant changes in the spectra of magnetoreflection, magnetotransmission, and the Kerr effect are shown to be observed for 0.1 < x < 0.25 and are attributable to a rearrangement of the band structure as the composition changes.

  16. Thermal Studies of Zn(II), Cd(II) and Hg(II) Complexes of Some N-Alkyl-N-Phenyl-Dithiocarbamates

    PubMed Central

    Onwudiwe, Damian C.; Ajibade, Peter A.

    2012-01-01

    The thermal decomposition of Zn(II), Cd(II) and Hg(II) complexes of N-ethyl-N-phenyl and N-butyl-N-phenyl dithiocarbamates have been studied using thermogravimetric analysis (TGA) and differential scanning calorimetry (DSC). The products of the decomposition, at two different temperatures, were further characterized by scanning electron microscopy (SEM) and energy-dispersive X-ray spectroscopy (EDX). The results show that while the zinc and cadmium complexes undergo decomposition to form metal sulphides, and further undergo oxidation forming metal oxides as final products, the mercury complexes gave unstable volatiles as the final product. PMID:22949811

  17. Bioleaching mechanism of Zn, Pb, In, Ag, Cd and As from Pb/Zn smelting slag by autotrophic bacteria.

    PubMed

    Wang, Jia; Huang, Qifei; Li, Ting; Xin, Baoping; Chen, Shi; Guo, Xingming; Liu, Changhao; Li, Yuping

    2015-08-15

    A few studies have focused on release of valuable/toxic metals from Pb/Zn smelting slag by heterotrophic bioleaching using expensive yeast extract as an energy source. The high leaching cost greatly limits the practical potential of the method. In this work, autotrophic bioleaching using cheap sulfur or/and pyrite as energy matter was firstly applied to tackle the smelting slag and the bioleaching mechanisms were explained. The results indicated autotrophic bioleaching can solubilize valuable/toxic metals from slag, yielding maximum extraction efficiencies of 90% for Zn, 86% for Cd and 71% for In, although the extraction efficiencies of Pb, As and Ag were poor. The bioleaching performance of Zn, Cd and Pb was independent of leaching system, and leaching mechanism was acid dissolution. A maximum efficiency of 25% for As was achieved by acid dissolution in sulfursulfur oxidizing bacteria (S-SOB), but the formation of FeAsO4 reduced extraction efficiency in mixed energy source - mixed culture (MS-MC). Combined works of acid dissolution and Fe(3+) oxidation in MS-MC was responsible for the highest extraction efficiency of 71% for In. Ag was present in the slag as refractory AgPb4(AsO4)3 and AgFe2S3, so extraction did not occur. PMID:25996622

  18. Evaluation of HgCdTe on GaAs Grown by Molecular Beam Epitaxy for High-Operating-Temperature Infrared Detector Applications

    NASA Astrophysics Data System (ADS)

    Wenisch, J.; Schirmacher, W.; Wollrab, R.; Eich, D.; Hanna, S.; Breiter, R.; Lutz, H.; Figgemeier, H.

    2015-09-01

    Molecular beam epitaxy (MBE) growth of HgCdTe (MCT) on alternative substrates enables production of both cheaper and more versatile (third-generation) infrared (IR) detectors. After rapid progress in the development of MBE-grown MCT on GaAs in recent years, the question of whether the considerable benefits of this material system are also applicable to high-operating-temperature (HOT) applications demands attention. In this paper, we present a mid-wavelength-IR 640 × 512 pixel, 15- μm-pitch focal-plane array with operability of 99.71% at operating temperature of 120 K and low dark current density. In the second part of the paper, MBE growth of short-wavelength IR material with Cd fraction of up to 0.8 is investigated as the basis for future evaluation of the material for low-light-level imaging HOT applications.

  19. Effects of morphology, diameter and periodic distance of the Ag nanoparticle periodic arrays on the enhancement of the plasmonic field absorption in the CdSe quantum dots

    NASA Astrophysics Data System (ADS)

    Kohnehpoushi, Saman; Eskandari, Mehdi; Ahmadi, Vahid; Yousefirad, Mansooreh; Nabavi, Elham

    2016-09-01

    In this work, the numerical calculations of plasmonic field absorption of Ag nanoparticles (Ag NPs) periodic arrays in the CdSe quantum dot (QD) film are investigated by the three-dimensional finite difference time domain (FDTD). Diameter (D), periodic distance (P), and morphology effects of Ag NPs are investigated on the improvement of the plasmonic field absorption in CdSe QD film. Results show that plasmonic field absorption in CdSe QD film is enhanced with reduction of D of Ag NPs until 5 nm and reduces thereafter. It is observed that with raising D of Ag NPs, optimum plasmonic field absorption in CdSe QD film is shifted toward the higher P. Moreover, with varying morphology of Ag NPs from spherical to cylindrical, cubic, ringing and pyramid, the plasmonic field absorption is considerably enhanced in CdSe QD film and position of quadrupole plasmon mode (QPPM) is shifted toward further wavelength. For cylindrical Ag NPs, the QPPM intensity increased with raising height (H) until 15 nm and reduces thereafter.

  20. Synthesis, characterization and evaluation of the photocatalytic performance of Ag-CdMoO{sub 4} solar light driven plasmonic photocatalyst

    SciTech Connect

    Adhikari, Rajesh; Malla, Shova; Gyawali, Gobinda; Sekino, Tohru; Lee, Soo Wohn

    2013-09-01

    Graphical abstract: - Highlights: • Ag-CdMoO{sub 4} solar light driven photocatalyst was successfully synthesized. • Photocatalyst exhibited strong absorption in the visible region. • Photocatalytic activity was significantly enhanced. • Enhanced activity was caused by the SPR effect induced by Ag nanoparticles. - Abstract: Ag-CdMoO{sub 4} plasmonic photocatalyst was synthesized in ethanol/water mixture by photo assisted co-precipitation method at room temperature. As synthesized powders were characterized by X-ray diffraction (XRD), transmission electron microscopy (TEM), UV–Vis diffuse reflectance spectroscopy (DRS), X-ray photoelectron spectroscopy (XPS) and Brunauer–Emmett–Teller (BET) surface area analyzer. Photocatalytic activity was evaluated by performing the degradation experiment over methylene blue (MB) and indigo carmine (IC) as model dyes under simulated solar light irradiation. The results revealed that the Ag-CdMoO{sub 4} showed the higher photocatalytic performance as compared to CdMoO{sub 4} nanoparticles. Dispersion of Ag nanoparticles over the surface of CdMoO{sub 4} nanoparticles causes the surface plasmon resonance (SPR) and enhances the broad absorption in the entire visible region of the solar spectrum. Hence, dispersion of Ag nanoparticles over CdMoO{sub 4} nanoparticles could be the better alternative to enhance the absorption of visible light by scheelite crystal family for effective photocatalysis.