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Sample records for ag sn sb

  1. Phase Equilibria of Sn-Sb-Ag Ternary System (II): Calculation

    NASA Astrophysics Data System (ADS)

    Gierlotka, Wojcieh; Huang, Yu-Chih; Chen, Sinn-Wen

    2008-12-01

    Knowledge of the phase equilibria of the Sn-Sb-Ag ternary system is of fundamental importance in Sn-Sb-based solder applications. Thermodynamic models of the ternary Sn-Sb-Ag system and the binary Sb-Ag and Sn-Ag systems are developed using the calculation of phase diagrams (CALPHAD) method. The calculated 250 °C isothermal section, liquidus projection, and thermodynamic properties are in good agreement with the experimental results. There are two continuous solid solutions formed between the ɛ-Ag3Sn and ɛ-Ag3Sb, and ζ-Ag17Sb3 and ζ-Ag5Sn phases, but there is no ternary compound. There are three class II ternary invariant reactions, L + Sb ↔ ɛ + β-SnSb, L + β-SnSbSn3Sb2 + ɛ, and L + Sn3Sb2 ↔ Sn + ɛ. Their reaction temperatures are 379 °C, 313 °C, and 231 °C, respectively.

  2. Martensitic transformation behavior in Ti–Ni–X (Ag, In, Sn, Sb, Te, Tl, Pb, Bi) ternary alloys

    SciTech Connect

    Jang, Jai-young; Chun, Su-jin; Kim, Nam-suk; Cho, Jeung-won; Kim, Jae-hyun; Yeom, Jong-taek; Kim, Jae-il; Nam, Tae-hyun

    2013-12-15

    Graphical abstract: - Highlights: • Ag, In and Sn were soluble in TiNi matrix, while Sb, Te, Tl, Pb and Bi were not. • The B2-R-B19′transformation occurred in Ti-Ni-(Ag, In, Sn) alloys. • Solid solution hardening was essential for inducing the B2-R transformation. - Abstract: The microstructures and transformation behaviors of Ti–Ni–X (Ag, In, Sn, Sb, Te, Tl, Pb, Bi) ternary alloys were investigated using electron probe micro-analysis (EPMA), X-ray diffraction (XRD), differential scanning calorimetry (DSC) and Micro Vickers hardness tests. All specimens consisted of Ti–Ni matrices and second phase particles. Ag, In and Sn were soluble in Ti–Ni matrices with a limited solubility (≤1.0 at%), while Sb, Te, Tl, Pb and Bi were not soluble. Two-stage B2-R-B19′ transformation occurred in Ti–48.8Ni–1.2Ag, Ti–49.0Ni–1.0In and Ti–49.0Ni–1.0Sn alloys, while one-stage B2-B19′ transformation occurred in Ti–49.0Ni–1.0Ag, Ti–49.0Ni–1.0Sb, Ti–49.0Ni–1.0Te, Ti–49.0Ni–1.0Pb and Ti–49.0Ni–1.0Bi alloys. Micro Vickers hardness of the alloys displaying the B2-R-B19′ transformation (Hv 250–368) was much larger than that (

  3. Electronic structures and magnetism in the Li2AgSb-type Heusler alloys, Zr2CoZ (Z=Al, Ga, In, Si, Ge, Sn, Pb, Sb): A first-principles study

    NASA Astrophysics Data System (ADS)

    Wang, X. T.; Cui, Y. T.; Liu, X. F.; Liu, G. D.

    2015-11-01

    The electronic and magnetic properties of Zr2CoZ (Z=Al, Ga, In, Si, Ge, Sn, Pb, and Sb) alloys with a Li2AgSb-type structure were investigated systematically using the first-principle calculations. Zr2CoZ (Z=Al, Ga, In, Si, Ge, Sn, and Pb) alloys are predicted to be half-metallic ferromagnets at their equilibrium lattice constants. The Zr2Co-based alloys have Mt (the total magnetic moment per unit cell) and Zt (the valence concentration) values following Slater-Pauling rule of Mt=Zt-18. The effects of lattice constants on the electronic and the magnetic properties are discussed in detail. Moreover, all the alloys investigated in this paper have a negative formation energy, which implies that they are thermodynamically stable.

  4. Reassessment of Atomic Mobilities in fcc Cu-Ag-Sn System Aiming at Establishment of an Atomic Mobility Database in Sn-Ag-Cu-In-Sb-Bi-Pb Solder Alloys

    NASA Astrophysics Data System (ADS)

    Xu, Huixia; Zhang, Lijun; Cheng, Kaiming; Chen, Weimin; Du, Yong

    2017-04-01

    To establish an accurate atomic mobility database in solder alloys, a reassessment of atomic mobilities in the fcc (face centered cubic) Cu-Ag-Sn system was performed as reported in the present work. The work entailed initial preparation of three fcc Cu-Sn diffusion couples, which were used to determine the composition-dependent interdiffusivities at 873 K, 923 K, and 973 K, to validate the literature data and provide new experimental data at low temperatures. Then, atomic mobilities in three boundary binaries, fcc Cu-Sn, fcc Ag-Sn, and fcc Cu-Ag, were updated based on the data for various experimental diffusivities obtained from the literature and the present work, together with the available thermodynamic database for solder alloys. Finally, based on the large number of interdiffusivities recently measured from the present authors, atomic mobilities in the fcc Cu-Ag-Sn ternary system were carefully evaluated. A comprehensive comparison between various calculated/model-predicted diffusion properties and the experimental data was used to validate the reliability of the obtained atomic mobilities in ternary fcc Cu-Ag-Sn alloys.

  5. Segregation of Sn and Sb in a ternary Cu(1 0 0)SnSb alloy

    NASA Astrophysics Data System (ADS)

    Asante, J. K. O.; Terblans, J. J.; Roos, W. D.

    2005-12-01

    Surface segregation studies of Sn and Sb in Cu(1 0 0)-0.14 at.% Sn-0.12 at.% Sb ternary alloy, have been done by making use of Auger Electron Spectroscopy. The method of Linear Temperature Ramp (LTR) was employed, whereby the sample was heated and cooled linearly at a constant rate. The positive heating rate showed both a kinetic segregation profile, as well as a narrow equilibrium segregation region, at higher temperatures. The equilibrium segregation profile was extended by cooling the sample. Sn was first to segregate to the surface due to its higher diffusion coefficient, mainly from a smaller activation energy ESn. Sb, due to its higher segregation energy, eventually replaced Sn from the surface. The modified Darken model was used to simulate the profile yielding the following segregation parameters: Do(Sn) = 6.3 × 10 -6 m 2/s, Do(Sb) = 2.8 × 10 -5 m 2/s; ESn = 175.4 kJ/mol, ESb = 186.3 kJ/mol; ΔGSn°=64.2 kJ/mol, ΔGSb°=84.3 kJ/mol; ΩCu-Sn = 3.4 kJ/mol, ΩCu-Sb = 15.9 kJ/mol and ΩSn-Sb = -5.4 kJ/mol.

  6. Synthesis of nanoparticles of Cu, Sb, Sn, SnSb and Cu2Sb by densification and atomization process.

    PubMed

    Lafont, Ugo; Simonin, Loïc; Tabrizi, Nooshin S; Schmidt-Ott, Andreas; Kelder, Erik M

    2009-04-01

    Here we present a technique based on an initial densification of solid precursor materials using magnetic pulses followed by an atomization process via spark discharging. These two processes allow changing bulky micron sized materials into nanoparticles (5-60 nm). The resulting intermediates and nanomaterials have been characterized using electron microscopy (TEM, SEM) and X-ray diffraction to show the texture and structure evolution between the initial bulk phase and the final nanoparticles. In this paper we present the nanoparticle formation of certain metals (Cu, Sn, Sb), alloys and intermetallics (SnSb, Cu2Sb) starting with pure elemental powders.

  7. Probing the electronic structures of ternary perovskite and pyrochlore oxides containing Sn(4+) or Sb(5+).

    PubMed

    Mizoguchi, Hiroshi; Eng, Hank W; Woodward, Patrick M

    2004-03-08

    Experimental and computational studies were performed to understand the electronic structure of ternary perovskites (ASnO(3), A = Ca, Sr, Ba, Cd), pyrochlores (RE(2)Sn(2)O(7), RE = Y, La, Lu; Cd(2)Sb(2)O(7)), and defect pyrochlore oxides (Ag(2)Sb(2)O(6)) containing the main group ions Sn(4+) and Sb(5+). In all compounds, the lowest energy states in the conduction band arise primarily from the antibonding Sn/Sb 5s-O 2p interaction. In the alkaline-earth stannate perovskites (BaSnO(3), SrSnO(3), and CaSnO(3)) the conduction bandwidth decreases strongly in response to the octahedral tilting distortion triggered by the decreasing size of the alkaline-earth cation. This in turn leads to a corresponding increase in the band gap from 3.1 eV in BaSnO(3) to 4.4 eV in CaSnO(3). The band gap of CdSnO(3) is relatively small (3.0 eV) considering the large octahedral tilting distortion. The origin of this apparent anomaly is the mixing between the empty Cd 5s orbitals and the antibonding Sn 5s-O 2p states. This mixing leads to a widening of the conduction band and a corresponding decrease in the band gap. The participation of the normally inert A-site cation in the electronic structure near the Fermi level can be considered an inductive effect, as it utilizes substitution on the A-site to directly modify the electronic structure of the SnO(3)(2)(-) framework. While the pyrochlore structure is more complicated, the energy level and width of the lowest energy conduction band can be analyzed in a manner similar to that utilized on the perovskite structure. The Sn-O-Sn and Sb-O-Sb bonds are highly distorted from linear geometry in pyrochlore, leading to a relatively narrow conduction band and a wide band gap. In Cd(2)Sb(2)O(7) and Ag(2)Sb(2)O(6) the Cd(2+) and Ag(+) ions exhibit a strong inductive effect that widens the conduction band and lowers the band gap significantly, very similar to the effect observed in the perovskite form of CdSnO(3).

  8. Effects of temperature, silicate melt composition, and oxygen fugacity on the partitioning of V, Mn, Co, Ni, Cu, Zn, As, Mo, Ag, Sn, Sb, W, Au, Pb, and Bi between sulfide phases and silicate melt

    NASA Astrophysics Data System (ADS)

    Li, Yuan; Audétat, Andreas

    2015-08-01

    In order to assess the role of sulfide in controlling the ore metal budgets and fractionation during magmatic genesis and differentiation, the partition coefficients (D) of V, Mn, Co, Ni, Cu, Zn, As, Mo, Ag, Sn, Sb, W, Au, Pb, and Bi between sulfide liquid (SL), monosulfide solid solution (MSS), and basaltic to rhyolitic melts (SM) were determined at 900-1200 °C, 0.5-1.5 GPa, and oxygen fugacity (fO2) ranging from ∼FMQ-2 to FMQ+3, in a piston-cylinder apparatus. The DSL/SM values range from 0.4 to 2 for V, 0.5 to 3 for Mn, 80 to 580 for Co, 2300 to 18,000 for Ni, 800 to 4600 for Cu, 1 to 11 for Zn, 20 to 180 for As, 4 to 230 for Mo, 450 to 1600 for Ag, 5 to 24 for Sn, 10 to 80 for Sb, 0.03 to 0.16 for W, 2000 to 29,000 for Au, 24 to 170 for Pb, and 830 to 11,000 for Bi; whereas the DMSS/SM values range from 0.04 to 10 for V, 0.5 to 10 for Mn, 70 to 2500 for Co, 650 to 18,000 for Ni, 280 to 42,000 for Cu, 0.1 to 80 for Zn, 0.2 to 30 for As, 1 to 820 for Mo, 20 to 500 for Ag, 0.2 to 220 for Sn, 0.1 to 40 for Sb, 0.01 to 24 for W, 10 to 2000 for Au, 0.03 to 6 for Pb, and 1 to 350 for Bi. Both DMSS/SM and DSL/SM values generally increase with decreasing temperature or decreasing FeOtot content in silicate melt, except for Mo, DMSS/SM and DSL/SM of which show a clear decrease with decreasing temperature. At given temperature and FeOtot content, high oxygen fugacity appears to lead to a significant decrease in DMSS/SM of Au, Bi, Mo, and potentially As. The partitioning data obtained experimentally in this study and previous studies were fitted to an empirical equation that expresses the DMSS/SM and/or DSL/SM of a given element as a function of temperature, oxygen fugacity, and FeOtot content of the silicate melt: log (DSL/SMorDMSS/SM = d + a · 10, 000 / T + b · (ΔFMQ) + c · log (FeOmelt) in which T is temperature in K, FeOmelt denotes wt% FeOtot in silicate melt, and ΔFMQ denotes log fO2 relative to the fayalite-magnetite-quartz (FMQ) oxygen buffer. The

  9. Effects of Sb Substitution by Sn on the Thermoelectric Properties of ZrCoSb

    NASA Astrophysics Data System (ADS)

    Yuan, Bo; Wang, Bo; Huang, Lihong; Lei, Xiaobo; Zhao, Lidong; Wang, Chao; Zhang, Qinyong

    2016-12-01

    ZrCoSb1-x Sn x (x = 0, 0.1, 0.2, 0.3, 0.35) half-Heusler (HH) samples were prepared by arc melting, ball milling and then hot-pressing. X-ray diffraction analysis results showed that all samples were crystallized in a HH phase. Thermoelectric (TE) properties of ZrCoSb1-x Sn x were measured from room temperature (RT) to 973 K. The Seebeck coefficient changed from negative to positive after substituting Sb with Sn, indicating the occurrence of conduction type transformation in ZrCoSb-based HH compounds. At the same time, the Seebeck coefficient decreased with increasing Sn substitution, and the electrical conductivity increased obviously with Sn addition when x ≤ 0.3. The lattice thermal conductivity of Sn-substituted samples was reduced dramatically because of the stronger phonon scattering by the strain field fluctuation induced by Sn replacement of Sb. Finally, as a result of the Sn substitution, a peak ZT of 0.52 was reached at 973 K in the ZrCoSb0.7Sn0.3 sample.

  10. Pirquitasite, Ag2ZnSnS4

    PubMed Central

    Schumer, Benjamin N.; Downs, Robert T.; Domanik, Kenneth J.; Andrade, Marcelo B; Origlieri, Marcus J.

    2013-01-01

    Pirquitasite, ideally Ag2ZnSnS4 (disilver zinc tin tetra­sulfide), exhibits tetra­gonal symmetry and is a member of the stannite group that has the general formula A2BCX 4, with A = Ag, Cu; B = Zn, Cd, Fe, Cu, Hg; C = Sn, Ge, Sb, As; and X = S, Se. In this study, single-crystal X-ray diffraction data are used to determine the structure of pirquitasite from a twinned crystal from the type locality, the Pirquitas deposit, Jujuy Province, Argentina, with anisotropic displacement parameters for all atoms, and a measured composition of (Ag1.87Cu0.13)(Zn0.61Fe0.36Cd0.03)SnS4. One Ag atom is located on Wyckoff site Wyckoff 2a (symmetry -4..), the other Ag atom is statistically disordered with minor amounts of Cu and is located on 2c (-4..), the (Zn, Fe, Cd) site on 2d (-4..), Sn on 2b (-4..), and S on general site 8g. This is the first determination of the crystal structure of pirquitasite, and our data indicate that the space group of pirquitasite is I-4, rather than I-42m as previously suggested. The structure was refined under consideration of twinning by inversion [twin ratio of the components 0.91 (6):0.09 (6)]. PMID:23424398

  11. Physicochemical Properties of Sb-Sn-Zn Alloys

    NASA Astrophysics Data System (ADS)

    Gancarz, Tomasz

    2014-12-01

    In this work, liquid Sb-Sn-Zn alloys were studied to determine their density, viscosity, and surface tension using the discharge crucible method. The measurements were carried out for alloy compositions having X Sn/ X Sb ratio of 1, 3, 4, and 9 and Zn content X Zn of 0.05, 0.1, 0.2, and 0.7 in the temperature range from 550 K to 1050 K. The effect of the Zn concentration in the Sb-Sn-Zn alloys on their density, viscosity, and surface tension was observed. Over a wide temperature range, the viscosity and surface tension increased with increasing Zn content in the alloy, while the density decreased. The experimental results obtained for surface tension and viscosity were compared with the results of the Butler model for surface tension and with the Moelwyn-Hughes, Sichen-Boygen-Seetharaman, Seetharaman-Sichen, Kozlov-Romanov-Petrov, and Kaptay models for viscosity.

  12. Liquidus Projections of Sn-Co-Ni and Sn-Rich Sn-Ag-Co-Ni Systems

    NASA Astrophysics Data System (ADS)

    Chen, Sinn-wen; Chen, Tung-Kai; Hsu, Chia-ming; Chang, Jui-shen; Pan, Kevin

    2014-07-01

    Alloys based on Sn and Sn-Ag are commonly used as Pb-free solders, and Ni is frequently used in barrier layers. Co has been studied as a possible alloying element in both solders and barrier layers. Thus, the Sn-Co-Ni and Sn-Ag-Co-Ni alloy systems are important for electronic soldering. Forty-nine Sn-Co-Ni alloys and 24 Sn-rich Sn-Ag-Co-Ni alloys were prepared. The primary solidification phases of these as-cast alloys were determined, and based on these results and the available phase diagrams of the constituent systems, the liquidus projections of Sn-Co-Ni ternary and Sn-Ag-Co-Ni quaternary systems at 90 at.% and 95 at.% Sn were determined. In the Sn-Co-Ni system, no ternary compound was found; (Ni,Co)3Sn2 and (Ni,Co) are continuous solid solutions, and there are eight kinds of primary solidification phases: Sn, CoSn3, CoSn2, CoSn, (Ni,Co)3Sn2, (Ni,Co), Ni3Sn, and Ni3Sn4. In the 90 at.% and 95 at.% Sn isoplethal sections of the Sn-Ag-Co-Ni liquidus projection, the primary solidification phases are CoSn2, CoSn, Ni3Sn4, and Ag3Sn.

  13. Crystallization of GeSbTe and AgInSbTe under dynamic conditions

    NASA Astrophysics Data System (ADS)

    Daly Flynn, Kelly; Strand, David A.

    2002-01-01

    Phase change materials, originally invented by S.R. Ovshinsky, are used in the leading standardized rewriteable optical storage products. GeSbTe was introduced as a high speed switching material with good cycling characteristics. AgInSbTe was originally developed for lower speed applications. These two materials systems have both differences and similarities. We compare the structural and dynamic write aspects of GeSbTe and AgInSbTe. We find the crystal structures of both systems to be simple, high-symmetry structures with low amorphous backgrounds. Under dynamic test conditions, GeSbTe crystallizes with bulk nucleation dominant behavior. At low speeds, AgInSbTe crystallizes with an edge growth mechanism but switches to bulk nucleation at high speeds. We find that in decreasing the laser spot size, there does not appear to be an improvement in erase or erase speed.

  14. 119Sn CEMS study of Sb doped SnO2 film

    NASA Astrophysics Data System (ADS)

    Nomura, K.; Kuzmann, E.; Garg, V. K.; de Oliveira, A. C.; Stichleutner, S.; Homonnay, Z.

    2016-12-01

    Sb doped SnO2 films prepared by DC sputtering and heating were characterized by 119Sn conversion electron Mössbauer spectrometry (CEMS). An asymmetric doublet was observed in the Mössbauer spectra of 1 %, 3 %, and 10 % Sb doped SnO2 films. The peak ratios of doublets are considered to be due to the columnar crystal growth on the substrate. With the doping level of Sb, both the isomer shift ( δ) and the quadrupole splitting (Δ) increased. After annealing, δ increased and Δ decreased for each sample. These results suggest the followings. The electron doping of the SnO2 lattice by pentavalent Sb induces the increase of the electron density at the SnIV nucleus. The annealing process leads to more complete accommodation of the Sb dopant that results in more effective electron doping and therefore increasing isomer shift for tin. Simultaneously, the distortion of the lattice caused by Sb is relaxed and the quadrupole splitting decreases.

  15. Interfacial Reactions in Sn-Ag/Co Couples

    NASA Astrophysics Data System (ADS)

    Chen, Sinn-wen; Chen, Tung-Kai; Chang, Jui-shen; Hsu, Chia-ming; Chen, Wei-An

    2014-02-01

    Sn-Ag alloys are important solders, and Co and Co alloys are investigated as barrier layers. Interfacial reactions in Sn-Ag/Co couples were examined in this study for Ag contents of 1.0 wt.%, 2.0 wt.%, and 3.5 wt.% and reaction temperatures of 250°C, 200°C, and 150°C. Only CoSn3 formed in Sn-Ag/Co couples reacted at 250°C, but both CoSn3 and Ag3Sn formed in couples reacted at 200°C and 150°C. The reaction layer was 100 μm thick in Sn-3.5 wt.%Ag/Co couples reacted at 200°C for 110 h. The reaction rates were lower if Ag was added, but remained very fast compared with those for Ni and Ni-based substrates.

  16. Phase equilibria, formation, crystal and electronic structure of ternary compounds in Ti-Ni-Sn and Ti-Ni-Sb ternary systems

    SciTech Connect

    Romaka, V.V.; Rogl, P.; Romaka, L.; Stadnyk, Yu.; Melnychenko, N.; Grytsiv, A.; Falmbigl, M.; Skryabina, N.

    2013-01-15

    The phase equilibria of the Ti-Ni-Sn and Ti-Ni-Sb ternary systems have been studied in the whole concentration range by means of X-ray and EPM analyses at 1073 K and 873 K, respectively. Four ternary intermetallic compounds TiNiSn (MgAgAs-type), TiNi{sub 2-x}Sn (MnCu{sub 2}Al-type), Ti{sub 2}Ni{sub 2}Sn (U{sub 2}Pt{sub 2}Sn-type), and Ti{sub 5}NiSn{sub 3} (Hf{sub 5}CuSn{sub 3}-type) are formed in Ti-Ni-Sn system at 1073 K. The TiNi{sub 2}Sn stannide is characterized by homogeneity in the range of 50-47 at% of Ni. The Ti-Ni-Sb ternary system at 873 K is characterized by formation of three ternary intermetallic compounds, Ti{sub 0.8}NiSb (MgAgAs-type), Ti{sub 5}Ni{sub 0.45}Sb{sub 2.55} (W{sub 5}Si{sub 3}-type), and Ti{sub 5}NiSb{sub 3} (Hf{sub 5}CuSn{sub 3}-type). The solubility of Ni in Ti{sub 0.8}NiSb decreases number of vacancies in Ti site up to Ti{sub 0.91}Ni{sub 1.1}Sb composition. - Graphical abstract: Isothermal section of the Ti-Ni-Sn phase diagram and DOS distribution in hypothetical TiNi{sub 1+x}Sn solid solution. Highlights: Black-Right-Pointing-Pointer Ti-Ni-Sn phase diagram was constructed at 1073 K. Black-Right-Pointing-Pointer Four ternary compounds are formed: TiNiSn, TiNi{sub 2-x}Sn, Ti{sub 2}Ni{sub 2}Sn, and Ti{sub 5}NiSn{sub 3}. Black-Right-Pointing-Pointer Three ternary compounds exist in Ti-Ni-Sb system at 873 K. Black-Right-Pointing-Pointer The TiNi{sub 2}Sb compound is absent.

  17. The reaction mechanism of SnSb and Sb thin film anodes for Na-ion batteries studied by X-ray diffraction, 119Sn and 121Sb Mössbauer spectroscopies

    DOE PAGES

    Baggetto, Loïc; Hah, Hien-Yoong; Jumas, Jean-Claude; ...

    2014-06-01

    The electrochemical reaction of Sb and SnSb anode materials with Na results in the formation of amorphous materials. To understand the resulting phases and electrochemical capacities we studied the reaction products local order using 119Sn and 121Sb Mössbauer spectroscopies in conjunction with measurements performed on model powder compounds of Na-Sn and Na-Sb to further clarify the reactions steps. For pure Sb the discharge (sodiation) starts with the formation of an amorphous phase composed of atomic environments similar to those found in NaSb, and proceeds further by the formation of environments similar to that present in Na3Sb. The reversible reaction takesmore » place during a large portion of the charge process. At full charge the anode material still contains a substantial fraction of Na, which explains the lack of recrystallization into crystalline Sb. The reaction of SnSb yields Na3Sb crystalline phase at full discharge at higher temperatures (65 and 95°C) while the room temperature reaction yields amorphous compounds. The electrochemically-driven, solid-state amorphization reaction occurring at room temperature is governed by the simultaneous formation of Na-coordinated Sn and Sb environments, as monitored by the decrease (increase) of the 119Sn (121Sb) Mössbauer isomer shifts. Overall, the monitoring of the hyperfine parameters enables to correlate the changes in Na content to the individual Sn and Sb local chemical environments.« less

  18. Sb-Doped SnO2 Nanoparticles Synthesized by Sonochemical-Assisted Precipitation Process.

    PubMed

    Noonuruk, Russameeruk; Vittayakorn, Naratip; Mekprasart, Wanichaya; Sritharathikhun, Jaran; Pecharapa, Wisanu

    2015-03-01

    Sb-doped SnO2 nanopowders were synthesized by sonochemical-assisted precipitation process using stannic chloride pentahydrate (SnCl4.5H2O) and antimony chloride (SbC3) as starting precursors. Effect of sonication and Sb doping concentrations on physical structures and electrical properties of Sb-doped SnO2 nanoparticles were investigated by X-ray diffraction, transmission electron microscope, X-ray photoelectron spectroscopy, Raman spectroscopy and two-point probe method. The results indicated that the good dispersion with less agglomeration of particles in SnO2 phase can be obtained by single step sonochemical-assisted process. Moreover, XRD results indicated that the crystallinity of Sb-doped SnO2 nanopowders deteriorated with increasing Sb content, suggesting that Sb dopant significantly prevent SnO2 crystallite growth. The XPS spectra of Sb-doped SnO2 obviously confirmed the existence of Sb ion incorporated into SnO2 matrix. These results revealed that incorporation of Sb ions into SnO2 lattice with specific concentration has significant influence on formation and crystallization and can dramatically enhance the conductivity of tin oxide.

  19. Dynamic viscosities of pure tin and Sn-Ag, Sn-Cu, and Sn-Ag-Cu eutectic melts

    NASA Astrophysics Data System (ADS)

    Rozhitsina, E. V.; Gruner, S.; Kaban, I.; Hoyer, W.; Sidorov, V. E.; Popel', P. S.

    2011-02-01

    The dynamic viscosities of the melts of pure tin and eutectic Sn-Ag, Sn-Cu, and Sn-Ag-Cu alloys are studied in heating followed by cooling, and the maximum heating temperature was 1200°C. An irreversible decrease in the viscosity is found in the temperature range 800-1000°C in the polytherms of all melts. This finding is related to the loss of a local order in a melt and can be used to develop temperature regimes for the production of lead-free solders.

  20. Electrochemical studies of CNT/Si–SnSb nanoparticles for lithium ion batteries

    SciTech Connect

    Nithyadharseni, P.; Reddy, M.V.; Nalini, B.; Ravindran, T.R.; Pillai, B.C.; Kalpana, M.; Chowdari, B.V.R.

    2015-10-15

    Highlights: • Si added SnSb and CNT exhibits very low particle size of below 30 nm • A strong PL quenching due to the addition of Si to SnSb. • Electrochemical studies show CNT added SnSb shows good capacity retention. - Abstract: Nano-structured SnSb, SnSb–CNT, Si–SnSb and Si–SnSb–CNT alloys were synthesized from metal chlorides of Sn, Sb and Si via reductive co-precipitation technique using NaBH{sub 4} as reducing agent. The as prepared compounds were characterized by various techniques such as X-ray diffraction (XRD), scanning electron microscope (SEM), Raman, Fourier transform infra-red (FTIR) and photoluminescence (PL) spectroscopy. The electrochemical performances of the compounds were characterized by galvanostatic cycling (GC) and cyclic voltammetry (CV). The Si–SnSb–CNT compound shows a high reversible capacity of 1200 mAh g{sup −1}. However, the rapid capacity fading was observed during cycling. In contrast, SnSb–CNT compound showed a high reversible capacity of 568 mAh g{sup −1} at 30th cycles with good cycling stability. The improved reversible capacity and cyclic performance of the SnSb–CNT compound could be attributed to the nanosacle dimension of SnSb particles and the structural advantage of CNTs.

  1. Formation mechanism of primary phases and eutectic structures within undercooled Pb-Sb-Sn ternary alloys

    NASA Astrophysics Data System (ADS)

    Wang, Weili; Dai, Fuping; Wei, Bingbo

    2007-08-01

    The solidification characteristics of three types of Pb-Sb-Sn ternary alloys with different primary phases were studied under substantial undercooling conditions. The experimental results show that primary (Pb) and SbSn phases grow in the dendritic mode, whereas primary (Sb) phase exhibits faceted growth in the form of polygonal blocks and long strips. (Pb) solid solution phase displays strong affinity with SbSn intermetallic compound so that they produce various morphologies of pseudobinary eutectics, but it can only grow in the divorced eutectic mode together with (Sb) phase. Although (Sb) solid solution phase and SbSn intermetallic compound may grow cooperatively within ternary eutectic microstructures, they seldom form pseudobinary eutectics independently. The (Pb)+(Sb)+SbSn ternary eutectic structure usually shows lamellar morphology, but appears as anomalous eutectic when its volume fraction becomes small. EDS analyses reveal that all of the three primary (Pb), (Sb) and SbSn phases exhibit conspicuous solute trapping effect during rapid solidification, which results in the remarkable extension of solute solubility.

  2. Electrochemical performance of Sn-Sb-Cu film anodes prepared by layer-by-layer electrodeposition

    NASA Astrophysics Data System (ADS)

    Jiang, Qianlei; Xue, Ruisheng; Jia, Mengqiu

    2012-02-01

    A novel layer-by-layer electrodeposition and heat-treatment approach was attempted to obtain Sn-Sb-Cu film anode for lithium ion batteries. The preparation of Sn-Sb-Cu anodes started with galvanostatic electrochemically depositing antimony and tin sequentially on the substrate of copper foil collector. Sn-Sb and Cu-Sb alloys were formed when heated. The SEM analysis showed that the crystalline grains become bigger and the surface of the Sn-Sb-Cu anode becomes more denser after annealing. The energy dispersive spectroscopy (EDS) and X-ray diffraction (XRD) analysis showed the antimony, tin and copper were alloyed to form SnSb and Cu2Sb after heat treatment. The X-ray photoelectron spectroscopy (XPS) analysis showed the surface of the Sn-Sb-Cu electrode was covered by a thin oxide layer. Electrochemical measurements showed that the annealed Sn-Sb-Cu anode has high reversible capacity and good capacity retention. It exhibited a reversible capacity of about 962 mAh/g in the initial cycle, which still remained 715 mAh/g after 30 cycles.

  3. Fabrication of ITO/Ag3SbS3/CdX (X = S, Se) thin film heterojunctions for photo-sensing applications

    NASA Astrophysics Data System (ADS)

    Daniel, T.; Henry, J.; Mohanraj, K.; Sivakumar, G.

    2016-11-01

    Thin film heterojunctions of Ag3SbS3/CdX (X = S, Se) are deposited on a glass substrate coated with SnO2:In (ITO). The films were characterized by x-ray diffraction (XRD), atomic force microscopy (AFM), UV-visible spectroscopy, photoluminescence spectroscopy, field emission scanning electron microscopy and I-V analysis. XRD reveals the monoclinic structure of Ag3SbS3 and a fcc structure for both CdS and CdSe thin films. The AFM images clearly show the distinct morphological features (nanopyramids, wedge-shaped and rectangular nanorod-like grains). From the I-V studies, under illumination, an ITO/Ag3SbS3/CdS heterojunction produces a higher photocurrent (12.4 mA) than that an ITO/Ag3SbS3/CdSe heterojunction (1.34 mA).

  4. The reaction mechanism of SnSb and Sb thin film anodes for Na-ion batteries studied by X-ray diffraction, 119Sn and 121Sb Mössbauer spectroscopies

    SciTech Connect

    Baggetto, Loïc; Hah, Hien-Yoong; Jumas, Jean-Claude; Johnson, Charles E.; Johnson, Jacqueline A.; Keum, Jong K.; Bridges, Craig A.; Veith, Gabriel M.

    2014-06-01

    The electrochemical reaction of Sb and SnSb anode materials with Na results in the formation of amorphous materials. To understand the resulting phases and electrochemical capacities we studied the reaction products local order using 119Sn and 121Sb Mössbauer spectroscopies in conjunction with measurements performed on model powder compounds of Na-Sn and Na-Sb to further clarify the reactions steps. For pure Sb the discharge (sodiation) starts with the formation of an amorphous phase composed of atomic environments similar to those found in NaSb, and proceeds further by the formation of environments similar to that present in Na3Sb. The reversible reaction takes place during a large portion of the charge process. At full charge the anode material still contains a substantial fraction of Na, which explains the lack of recrystallization into crystalline Sb. The reaction of SnSb yields Na3Sb crystalline phase at full discharge at higher temperatures (65 and 95°C) while the room temperature reaction yields amorphous compounds. The electrochemically-driven, solid-state amorphization reaction occurring at room temperature is governed by the simultaneous formation of Na-coordinated Sn and Sb environments, as monitored by the decrease (increase) of the 119Sn (121Sb) Mössbauer isomer shifts. Overall, the monitoring of the hyperfine parameters enables to correlate the changes in Na content to the individual Sn and Sb local chemical environments.

  5. Self-organization of uniform Ag nano-clusters on Sb-terminated Si(100) surface

    NASA Astrophysics Data System (ADS)

    Park, Kang-Ho; Ha, Jeong Sook; Yun, Wan Soo; Lee, El-Hang

    1998-10-01

    Nanometer sized Ag clusters were found to be uniformly formed in the initial stage of Ag growth on Sb-terminated Si(100) surfaces. Due to the saturation of Si dangling bonds by Sb adatoms, Ag clusters were grown on the Sb-terminated Si(100) surface without a Ag wetting layer. We found that the diameters and heights of Ag clusters were confined to a nanometer scale, and the size distribution was quite uniform compared to Ag growth on Sb-terminated Si(111). Those features are considered to result from the separation of Ag clusters by coherently aligned voids in the underlying Sb-terminated Si(100) surface. Tunneling spectroscopy measurements showed that the local conduction properties of Ag clusters gradually changed from semiconducting to metallic as Ag coverage increased.

  6. Thermodynamic properties of the intermediate phases of the Ag-Sb-Se system

    NASA Astrophysics Data System (ADS)

    Moroz, M. V.; Prokhorenko, M. V.

    2014-05-01

    The emf (ɛ) dependence of C|Ag|AgI|glass Ag2GeS3| D|C galvanic elements on temperature is studied in the range of 470 to 575 K (C represents current electrodes, D denotes equilibrium three-phase alloys of individual Ag-Sb-Se systems, and AgI|glass Ag2GeS3 is a bilayer membrane with purely ionic (Ag+) electroconductivity). Analytical equations ɛ = ɛ( T) are used to calculate the thermodynamic functions of saturated solid solutions of the AgSbSe2, Sb2Se3, and Ag2Se phases of the Ag-Sb-Se system in the standard state.

  7. Diffusivities and Atomic Mobilities of Sn-Ag and Sn-In Melts

    NASA Astrophysics Data System (ADS)

    Chen, Wei-Min; Zhang, Li-Jun; Du, Yong; Huang, Bai-Yun

    2014-04-01

    The recently developed Arrhenius formula for the modified Sutherland equation was employed to calculate the self- and impurity diffusivities in liquid Sn, Ag, and In. The reliability of the calculated self- and impurity diffusivities was validated by comparing the presently calculated results with critically reviewed literature data. Based on reliable tracer and chemical diffusivities available in literature, the atomic mobility parameters in Sn-Ag and Sn-In melts were then evaluated with the aid of the available thermodynamic description for the liquid phase. Comprehensive comparisons showed that most of the measured and theoretical diffusivities in Sn-Ag and Sn-In melts can be reasonably reproduced by the currently obtained atomic mobilities. Moreover, the atomic mobilities were further verified by comparing the model-predicted concentration profiles with the measured ones in various liquid Sn-In diffusion couples. In addition, a simulation of Ag dissolution into liquid Sn-Ag solder during a reflow process was performed via the presently obtained atomic mobilities in the Sn-Ag melt.

  8. Influence of substituting Sn for Sb on the thermoelectric transport properties of CoSb{sub 3}-based skutterudites

    SciTech Connect

    Hui, Si; Nielsen, Michele D.; Homer, Mark R.; Medlin, Douglas L.; Tobola, Janusz; Salvador, James R.; Heremans, Joseph P.; Pipe, Kevin P.; Uher, Ctirad

    2014-03-14

    Band structure calculations that incorporate impurity effects suggest that a band resonant state may be formed in p-type CoSb{sub 3}-based skutterudites by replacing Sb atoms with Sn dopant atoms. Such resonant states have the potential to greatly improve thermoelectric energy conversion efficiency by increasing the density of states variation near the Fermi level, thereby increasing the Seebeck coefficient at a given carrier concentration. Through transport measurements of the Seebeck coefficient, electrical conductivity, thermal conductivity, and Hall coefficient, we show that a practical band resonant state is not achieved by Sn doping. Compared to undoped CoSb{sub 3}, the dimensionless figure of merit (ZT) in Sn-doped CoSb{sub 3} is enhanced slightly at high temperatures to a value of 0.2, mostly due to a reduction in thermal conductivity. The Fermi level is calculated not to reach the band resonant state induced by Sn impurity atoms within the range of Sn concentrations examined here.

  9. First-principles study of Sb adsorption on Ag (110)(2×2)

    SciTech Connect

    Nie, JL; Xiao, H Y.; Zu, Xiaotao; Gao, Fei

    2006-08-01

    The adsorption of antimony atom on the Ag(110) surface has been studied within the density functional theory framework. It was turned out that Sb-Ag surface alloy was formed in which Sb atoms substitute Ag atom in the outermost layer and subsurface site absorption was not preferred, suggesting that Sb is well segregated to the surface. Geometric analysis showed that rumpling between substitutional Sb and Ag in the alloy surface is negligible. These results are found to agree well with the experimental finding of Nascimento et al. [Surf. Sci. 572 (2004) 337]. In addition, investigation of the diffusion of Ag atom on bare and Sb-covered Ag(110) surface showed that Ag adatoms will jump along the so call in-channel direction and Sb substitution has little effect on the diffusion of Ag adatoms on Ag(110) surface. Such diffusion behavior was found to be different from that of Ag adatoms on Ag(111) surface, where the diffusion energy barrier was reported to be significantly increased upon Sb substitution [Phys. Rev. Lett. 73 (1993) 2437].

  10. Ba-filled Ni-Sb-Sn based skutterudites with anomalously high lattice thermal conductivity.

    PubMed

    Paschinger, W; Rogl, G; Grytsiv, A; Michor, H; Heinrich, P R; Müller, H; Puchegger, S; Klobes, B; Hermann, R P; Reinecker, M; Eisenmenger-Sitter, Ch; Broz, P; Bauer, E; Giester, G; Zehetbauer, M; Rogl, P F

    2016-07-05

    Novel filled skutterudites BayNi4Sb12-xSnx (ymax = 0.93) have been prepared by arc melting followed by annealing at 250, 350 and 450 °C up to 30 days in vacuum-sealed quartz vials. Extension of the homogeneity region, solidus temperatures and structural investigations were performed for the skutterudite phase in the ternary Ni-Sn-Sb and in the quaternary Ba-Ni-Sb-Sn systems. Phase equilibria in the Ni-Sn-Sb system at 450 °C were established by means of Electron Probe Microanalysis (EPMA) and X-ray Powder Diffraction (XPD). With rather small cages Ni4(Sb,Sn)12, the Ba-Ni-Sn-Sb skutterudite system is perfectly suited to study the influence of filler atoms on the phonon thermal conductivity. Single-phase samples with the composition Ni4Sb8.2Sn3.8, Ba0.42Ni4Sb8.2Sn3.8 and Ba0.92Ni4Sb6.7Sn5.3 were used to measure their physical properties, i.e. temperature dependent electrical resistivity, Seebeck coefficient and thermal conductivity. The resistivity data demonstrate a crossover from metallic to semiconducting behaviour. The corresponding gap width was extracted from the maxima in the Seebeck coefficient data as a function of temperature. Single crystal X-ray structure analyses at 100, 200 and 300 K revealed the thermal expansion coefficients as well as Einstein and Debye temperatures for Ba0.73Ni4Sb8.1Sn3.9 and Ba0.95Ni4Sb6.1Sn5.9. These data were in accordance with the Debye temperatures obtained from the specific heat (4.4 K < T < 140 K) and Mössbauer spectroscopy (10 K < T < 290 K). Rather small atom displacement parameters for the Ba filler atoms indicate a severe reduction in the "rattling behaviour" consistent with the high levels of lattice thermal conductivity. The elastic moduli, collected from Resonant Ultrasonic Spectroscopy ranged from 100 GPa for Ni4Sb8.2Sn3.8 to 116 GPa for Ba0.92Ni4Sb6.7Sn5.3. The thermal expansion coefficients were 11.8 × 10(-6) K(-1) for Ni4Sb8.2Sn3.8 and 13.8 × 10(-6) K(-1) for Ba0.92Ni4Sb6.7Sn5.3. The room temperature Vickers

  11. Resonant states in the electronic structure of the high performance thermoelectrics AgPbmSbTe2+m: the role of Ag-Sb microstructures.

    PubMed

    Bilc, Daniel; Mahanti, S D; Quarez, Eric; Hsu, Kuei-Fang; Pcionek, Robert; Kanatzidis, M G

    2004-10-01

    Ab initio electronic structure calculations based on gradient corrected density-functional theory were performed on a class of novel quaternary compounds AgPb(m)SbTe(2+m), which were found to be excellent high temperature thermoelctrics with a large figure of merit ZT approximately 2.2 at 800 K. We find that resonant states appear near the top of the valence and bottom of the conduction bands of bulk PbTe when Ag and Sb replace Pb. These states can be understood in terms of modified Te-Ag(Sb) bonds. The electronic structure near the gap depends sensitively on the microstructural arrangements of Ag-Sb atoms, suggesting that large ZT values may originate from the nature of these ordering arrangements.

  12. Influence of alloying elements on structure and some physical properties of quenched Sn-Sb alloy

    NASA Astrophysics Data System (ADS)

    Kamal, M.; El-Bediwi, A. B.; El-Shobaki, M. R.

    2006-09-01

    We study the influence of ternary and quaternary alloying elements (Pb, Cd, Cu or Cu-Pb and Cu-Cd) on structural, electrical, hardness and other mechanical properties of Sn-Sb alloys (using an X-ray diffractometer and optical microscope, the double bridge method, Vickers hardness tester and the dynamic resonance method) to produce the best alloy for bearing applications. Adding Cu or Pb to Sn-Sb alloys improves their bearing properties, such as the mechanical properties (elastic modulus, internal friction, hardness and fracture strain) and thermal conductivity. Also, adding Cu, Pb or Cu-Pb to Sn-Sb alloys makes them excellent in their bearing applications and environmental hazards when compared with the Pb88Sn10Cu2 alloy for automotive applications (FIAT Normalizzazione) and the lead-based Babbitt bearing alloy.

  13. Interfacial reactions in the Sn-Ag/Au couples

    NASA Astrophysics Data System (ADS)

    Chen, Sinn-Wen; Yen, Yee-Wen

    2001-09-01

    Ag-Sn alloys are one of the most promising lead-free solders. Their reactions with Au substrates have been examined by using the reaction couple technique. Sn-3.5wt.%Ag/Au and Sn-25wt.%Ag/Au couples have been prepared and reacted at 120, 150, 180 and 200 C for various lengths of time. Three phases, δ-AuSn, ɛ2-AuSn2, and η-AuSn4, are found in all the couples. The thickness of the reaction layers inccreases with higher temperatures and longer reaction time, and their growth rates are described by using the parabolic law. Arrhenius equation is used to describe the temperature dependence of the growth rates. The activation energy of the growth of the intermetallic layers in both kinds of the reaction couples is similar and is determined to be 76.74 KJ/mole. Based on the reaction path knowledge and interfacial morphology, it is concluded that Sn is the fastest diffusion species in the couples.

  14. Effects of Ag on the Kirkendall void formation of Sn-xAg/Cu solder joints

    NASA Astrophysics Data System (ADS)

    Kim, Sunghwan; Yu, Jin

    2010-10-01

    Binary Sn-Ag solders with varying amounts of Ag (0.5, 2.0, and 3.5 wt %) were reacted with Cu under bump metallurgy (UBM) which was electroplated with bis-sodium sulfopropyl-disulfide additive, and the characteristics of Kirkendall void formation at the solder joints were investigated. The results indicate that the propensity to form Kirkendall voids at the solder joint decreased with the Ag content. Subsequent Auger electron spectroscopy analyses showed that Ag dissolved in the Cu UBM reduced the segregation of S to the Cu3Sn/Cu interface, which suppressed the nucleation of Kirkendall voids at the interface.

  15. Tensile properties and thermal shock reliability of Sn-Ag-Cu solder joint with indium addition.

    PubMed

    Yu, A-Mi; Jang, Jae-Won; Lee, Jong-Hyun; Kim, Jun-Ki; Kim, Mok-Soon

    2012-04-01

    The thermal shock reliability and tensile properties of a newly developed quaternary Sn-1.2Ag-0.5Cu-0.4In (wt%) solder alloy were investigated and compared to those of ternary Sn-Ag-Cu based Pb-free solder alloys. It was revealed that the Sn-1.2Ag-0.5Cu-0.4In solder alloy shows better thermal shock reliability compared to the Sn-1.0Ag-0.5Cu and Sn-3.0Ag-0.5Cu solder alloys. The quaternary alloy has higher strength than Sn-1.0Ag-0.5Cu alloy, and higher elongation than Sn-3.0Ag-0.5Cu alloy. It was also revealed that the addition of indium promotes the formation of Ag3(Sn, In) phase in the solder joint during reflow process.

  16. Thermodynamic Properties of Liquid Ag-Au-Sn Alloys

    NASA Astrophysics Data System (ADS)

    Hindler, M.; Knott, S.; Mikula, A.

    2010-10-01

    The thermodynamic properties of liquid Ag-Au-Sn alloys were studied with an electromotive force (EMF) method using the eutectic mixture of KCl/LiCl as a liquid electrolyte. Activities of Sn in the liquid alloys were measured at three cross-sections with constant molar ratios of Ag:Au = 2:1, 1:1, and 1:2 with tin in the concentration range between 20 at.% and 90 at.% from the liquidus of the samples up to 1030 K. The integral Gibbs energies at 973 K and the integral enthalpies were calculated by Gibbs-Duhem integration.

  17. Pb-free Sn-Ag-Cu ternary eutectic solder

    DOEpatents

    Anderson, I.E.; Yost, F.G.; Smith, J.F.; Miller, C.M.; Terpstra, R.L.

    1996-06-18

    A Pb-free solder includes a ternary eutectic composition consisting essentially of about 93.6 weight % Sn-about 4.7 weight % Ag-about 1.7 weight % Cu having a eutectic melting temperature of about 217 C and variants of the ternary composition wherein the relative concentrations of Sn, Ag, and Cu deviate from the ternary eutectic composition to provide a controlled melting temperature range (liquid-solid ``mushy`` zone) relative to the eutectic melting temperature (e.g. up to 15 C above the eutectic melting temperature). 5 figs.

  18. Pb-free Sn-Ag-Cu ternary eutectic solder

    DOEpatents

    Anderson, Iver E.; Yost, Frederick G.; Smith, John F.; Miller, Chad M.; Terpstra, Robert L.

    1996-06-18

    A Pb-free solder includes a ternary eutectic composition consisting essentially of about 93.6 weight % Sn-about 4.7 weight % Ag-about 1.7 weight % Cu having a eutectic melting temperature of about 217.degree. C. and variants of the ternary composition wherein the relative concentrations of Sn, Ag, and Cu deviate from the ternary eutectic composition to provide a controlled melting temperature range (liquid-solid "mushy" zone) relative to the eutectic melting temperature (e.g. up to 15.degree. C. above the eutectic melting temperature).

  19. The role of Sb in solar cell material Cu 2 ZnSnS 4

    SciTech Connect

    Zhang, Xiaoli; Han, Miaomiao; Zeng, Zhi; Duan, Yuhua

    2017-01-01

    In this study, based on first-principles calculations we report a possible mechanism of the efficiency improvement of the Sb-doped Cu2ZnSnS4 (CZTS) solar cells from the Sb-related defect point of view. Different from Sb in CuInSe2 which substituted the Cu atomic site and acted as group-13 elements on the Cu-poor growth condition, we find out that Sb prefers to substitute Sn atomic site and acts as group-14 elements on the Cu-poor growth condition in CZTS. At low Sb concentration, SbSn produces a deep defect level which is detrimental for the solar cell application. At high Sb concentration, Sb 5s states form an isolated half-filled intermediate band at 0.5 eV above the valence band maximum which will increase the photocurrent as well as the solar cell efficiency.

  20. Lead-free Sn-Ag and Sn-Ag-Bi solder powders prepared by mechanical alloying

    NASA Astrophysics Data System (ADS)

    Lai, H. L.; Duh, J. G.

    2003-04-01

    A mechanical alloying (MA) process was used to produce lead-free solder pastes of Sn-3.5Ag and the Sn-3.5Ag-4Bi system. Because of the high energy induced by repeated fracturing and welding, the grinding media played an important role during the MA process. A ceramic container was used to provide stronger impact force, which could induce phase transformation better than a Teflon container. In addition, it was found that 1-cm balls could fracture Bi particles and promote their dissolution into the Sn matrix. On the contrary, the milling process tended to achieve homogeneous mixing when using 3-mm balls. The MA powders, after milling with 3-mm balls, showed a small endothermic peak from the differential scanning calorimetry (DSC) profile at around 138°C, which was the eutectic temperature of Sn-Bi. The melting points of the MA powders in the ceramic container were measured to be 221°C and 203°C, respectively, for Sn-3.5Ag and Sn-3.5Ag-4Bi from the DSC curves. The reduced melting point ensured the complete melting during reflow with a peak temperature of 240°C. The formation of Ag3Sn was also observed from the x-ray diffraction peaks, indicating successful alloying by MA. The solder pastes could, thus, be produced by adding flux into the MA powders. The wetting property of the solder joint was also evaluated. The as-prepared solder pastes on electroless Ni-P/Cu/Si showed good metallurgical bonding with a contact angle less than 20°.

  1. Thermoelectric properties of p-type Ag1-x(Pb1-ySny)mSb1-zTem+2

    NASA Astrophysics Data System (ADS)

    Ahn, Kyunghan; Kong, Huijun; Uher, Ctirad; Kanatzidis, Mercouri G.

    2016-10-01

    The thermoelectric properties of Ag1-x(Pb1-ySny)mSb1-zTem+2 (4≤m≤16, -0.1≤x≤0.3, 1/3≤y≤2/3, 0.2≤z≤0.4; Lead Antimony Silver Tellurium Tin, LASTT-m) compositions were investigated in the temperature range of 300 to ~670 K. All samples crystallize in the average NaCl-type structure without any noticeable second phase and exhibit very narrow bandgaps of <0.1 eV. We studied a range of m values, silver concentrations (x), Pb/Sn ratios (y), and antimony concentrations (z) to determine their effects on the thermoelectric properties. The samples were investigated as melt grown polycrystalline ingots. Varying the Ag contents, the Pb/Sn ratios, and the Sb contents off-stoichiometry allowed us to control the electrical conductivity, the Seebeck coefficient, and the thermal conductivity. The electrical conductivity tends to decrease with decreasing m values. The highest ZT of ~1.1 was achieved at ~660 K for Ag0.9Pb5Sn5Sb0.8Te12 mainly due to the very low lattice thermal conductivity of ~0.4 W/(m K) around 660 K. Also, samples with charge-balanced stoichiometries, Ag(Pb1-ySny)mSbTem+2, were studied and found to exhibit a lower power factor and higher lattice thermal conductivity than the Ag1-x(Pb1-ySny)mSb1-zTem+2 compositions.

  2. Thermoelectric properties of Co(x)Ni(4-x)Sb(12-y)Sn(y) ternary skutterudites

    NASA Technical Reports Server (NTRS)

    Mackey, Jon A.; Dynys, Frederick W.; Sehirlioglu, Alp

    2014-01-01

    Thermoelectric materials based on the skutterudite crystal structure have demonstrated enhanced performance (ZT greater than 1), along with good thermal stability and favorable mechanical properties. Binary skutterudites, with single and multiple fillers, have been intensively studied in recent years. Compared to binary skutterudites, the ternary systems have received less attention, e.g. Ni4Sb8Sn4. Ternary skutterudites are isoelectronic variants of binary skutterudites; cation substitutions appear to be isostructural to their binary analogues. In general, ternary skutterudites exhibit lower thermal conductivity. Ternary systems of Ni4Bi8Ge4, Ni4Sb8Ge4, and Ni4Sb8Sn4 were investigated using combined solidification and sintering steps. Skutterudite formation was not achieved in the Ni4Bi8Ge4 and Ni4Sb8Ge4 systems; skutterudite formation occurred in Ni4Sb8Sn4 system. P-type material was achieved by Co substitution for Ni. Thermoelectric properties were measured from 298 K to 673 K for Ni4Sb8Sn4, Ni4 Sb7Sn5 and Co2Ni2Sb7Sn5. N-type Ni4Sb8Sn4 exhibit the highest figure of merit of 0.1 at 523 K.

  3. Influence of microstructure on fatigue crack growth behavior of Sn-Ag solder interfaces

    NASA Astrophysics Data System (ADS)

    Liu, Pi Lin; Shang, Jian Ku

    2000-05-01

    The relationship between microstructure and fatigue crack growth behavior was examined at Sn-Ag solder interfaces on copper and electroless-nickel metallizations. On copper metallization, the solder interface was lined with a coarse Ag3Sn intermetallic phase in addition to the Cu6Sn5 intermetallic and the adjacent solder alloy contained nodular Ag3Sn phase. This interfacial microstructure was shown to result in inferior fatigue resistance, with the fatigue crack path following the interfacial Ag3Sn intermetallic phase. In contrast, the solder interface on the electroless-nickel metallization was covered with a thin layer of Ni3Sn4 intermetallic phase, and the solder microstructure was composed of fine needles of Ag3Sn phase dispersed in the Sn-rich matrix. This solder interface was found to be significantly more resistant to fatigue than the copper/Sn-Ag solder interface.

  4. Thermoelectric Generators from AgBiTe and AgSbTe Thin Films Modified by High-Energy Beam

    NASA Astrophysics Data System (ADS)

    Budak, S.; Guner, S.; Muntele, C.; Ila, D.

    2015-06-01

    The ternary chalcogenides AgBiTe2 and AgSbTe2 belong to the family of semiconductors with disordered NaCl cubic structure in which Ag and Sb occupy metal sublattices. Both compounds are very interesting due to their thermoelectric properties. We have grown single-layer AgBiTe and AgSbTe thin films on silicon (Si) and fused silica (Suprasil) substrates using electron beam deposition. High-energy (MeV) Si-ion bombardment was performed on the thin-film samples at five different fluences between 5 × 1013 ions/cm2 and 7 × 1015 ions/cm2. We have measured the thermoelectric efficiency (figure of merit, ZT) of the fabricated thermoelectric devices by measuring the cross-plane thermal conductivity using the third-harmonic (3 ω) method, the cross-plane Seebeck coefficient, and the in-plane electrical conductivity using the van der Pauw method before and after MeV Si-ion bombardment. Rutherford backscattering spectrometry and the Rutherford Universal Manipulation Program (RUMP) simulation package were used to analyze the elemental composition and thickness of the deposited materials on the substrates. The RUMP simulation gave thicknesses for the AgBiTe and AgSbTe thin films of 270 nm and 188 nm, respectively. The figure of merit for AgBiTe started to decrease from the value of 0.37 for the virgin sample after bombardment. We saw similar decreasing behavior for the AgSbTe thin-film system. The figure of merit for AgSbTe started to decrease from the value of 0.88 for the virgin sample after bombardment. MeV Si-ion bombardment caused changes in the thermoelectric properties of the thin films.

  5. Liquid-Phase Separation in the Interdendritic Region After Growth of Primary β-Sn in Undercooled Sn-2.8Ag-0.3Cu Melt

    NASA Astrophysics Data System (ADS)

    Takamatsu, Yoshiko; Esaka, Hisao; Shinozuka, Kei

    2012-08-01

    An unusual microstructure consisting of both Sn-Ag3Sn and Sn-Cu6Sn5 binary eutectic structures is observed in actual solder balls. In this study, the solidification process of the Sn-Ag3Sn binary eutectic structure after the growth of primary β-Sn in an undercooled Sn-2.8Ag-0.3Cu alloy was investigated by using thermal analysis and interruption tests to understand the formation of the unusual microstructure. First, fine Ag-enriched liquid zones formed around β-Sn after the growth of primary β-Sn. The Ag-enriched zones then gradually enlarged with the accumulation of Ag from the remnant liquid with a decrease in temperature. This indicated that the liquid-phase separation occurred in the remnant liquid after the nucleation of β-Sn. Eventually, when the temperature of the specimen decreased to approximately the binary eutectic temperature, eutectic Ag3Sn nucleated in the Ag-enriched zones. From interruption tests, we determined the precursor of the Sn-Ag3Sn binary eutectic structure before the beginning of Sn-Ag3Sn binary eutectic solidification. This finding corresponds to the precursor of the Sn-Cu6Sn5 binary eutectic structure observed in the Sn-1.0Ag-0.5Cu alloy.

  6. Vacancy complexes in Sb-doped SnO{sub 2}

    SciTech Connect

    Korhonen, E.; Tuomisto, F.; Bierwagen, O.; Speck, J. S.; White, M. E.; Galazka, Z.

    2014-02-21

    MBE-grown Sb-doped epitaxial SnO{sub 2} thin-film samples with varying doping concentrations have been measured using positron Doppler spectroscopy. Vacancies were found in varying amounts, the general trend points to a decrease in vacancy concentration as dopant concentration increases. The exact identity of the vacancy defects is not known, but results suggest complexes of Sn and O vacancies.

  7. Phase equilibria of the Sn-Ag-Cu-Ni quaternary system at the sn-rich corner

    NASA Astrophysics Data System (ADS)

    Chen, Sinn-Wen; Chang, Cheng-An

    2004-10-01

    Knowledge of phase equilibria of the Sn-Ag-Cu-Ni quaternary system at the Sn-rich corner is important for the understanding of the interfacial reactions at the Sn-Ag-Cu/Ni contacts, which are frequently encountered in recent microelectronic products. Various Sn-Ag-Cu-Ni alloys were prepared and equilibrated at 250°C. The alloys were then quenched and analyzed. The phases were determined by metallography, compositional analysis, and x-ray diffraction (XRD) analysis. No quaternary phases were found. The isoplethal sections at 60at.%Sn, 70at.%Sn, 80at.%Sn, and 90at.%Sn at 250°C are determined. The phase equilibrium relationship was proposed based on the quaternary experimental results and the 250°C isothermal sections of the four constituent ternary systems, Sn-Ag-Cu, Sn-Ag-Ni, Sn-Cu-Ni, and Cu-Ag-Ni. Because there are no ternary phases in all these three systems, all the compounds are in fact binary compounds with various solubilities of the other two elements.

  8. Efficient photocatalytic degradation of phenol in aqueous solution by SnO2:Sb nanoparticles

    NASA Astrophysics Data System (ADS)

    Al-Hamdi, Abdullah M.; Sillanpää, Mika; Bora, Tanujjal; Dutta, Joydeep

    2016-05-01

    Photodegradation of phenol in the presence of tin dioxide (SnO2) nanoparticles under UV light irradiation is known to be an effective photocatalytic process. However, phenol degradation under solar light is less effective due to the large band gap of SnO2. In this study antimony (Sb) doped tin dioxide (SnO2) nanoparticles were prepared at a low temperature (80 °C) by a sol-gel method and studied for its photocatalytic activity with phenol as a test contaminant. The catalytic degradation of phenol in aqueous media was studied using high performance liquid chromatography and total organic carbon measurements. The change in the concentration of phenol affects the pH of the solution due to the by-products formed during the photo-oxidation of phenol. The photoactivity of SnO2:Sb was found to be a maximum for 0.6 wt.% Sb doped SnO2 nanoparticles with 10 mg L-1 phenol in water. Within 2 h of photodegradation, more than 95% of phenol could be removed under solar light irradiation.

  9. Polarity and growth directions in Sn-seeded GaSb nanowires.

    PubMed

    Zamani, Reza R; Gorji Ghalamestani, Sepideh; Niu, Jie; Sköld, Niklas; Dick, Kimberly A

    2017-03-02

    We here investigate the growth mechanism of Sn-seeded GaSb nanowires and demonstrate how the seed particle and its dynamics at the growth interface of the nanowire determine the polarity, as well as the formation of structural defects. We use aberration-corrected scanning transmission electron microscopy imaging methodologies to study the interrelationship between the structural properties, i.e. polarity, growth mechanism, and formation of inclined twin boundaries in pairs. Moreover, the optical properties of the Sn-seeded GaSb nanowires are examined. Their photoluminescence response is compared with one of their Au-seeded counterparts, suggesting the incorporation of Sn atoms from the seed particles into the nanowires.

  10. High temperature magnetic order in Zn1-x Mn x SnSb2+MnSb nanocomposite ferromagnetic semiconductors

    NASA Astrophysics Data System (ADS)

    Kilanski, L.; Górska, M.; Ślawska-Waniewska, A.; Lewińska, S.; Szymczak, R.; Dynowska, E.; Podgórni, A.; Dobrowolski, W.; Ralević, U.; Gajić, R.; Romčević, N.; Fedorchenko, I. V.; Marenkin, S. F.

    2016-08-01

    We present studies of structural, magnetic, and electrical properties of Zn1-x Mn x SnSb2+MnSb nanocomposite ferromagnetic semiconductors with the average Mn-content, \\bar{x} , changing from 0.027 up to 0.138. The magnetic force microscope imaging done at room temperature shows the presence of a strong signal coming from MnSb clusters. Magnetic properties show the paramagnet-ferromagnet transition with the Curie temperature, T C, equal to about 522 K and the cluster-glass behavior with the transition temperature, T CG, equal to about 465 K, both related to MnSb clusters. The magnetotransport studies show that all investigated samples are p-type semiconductors with high hole concentration, p, changing from 1021 to 1022 cm-3. A large increase in the resistivity as a function of the magnetic field is observed at T  <  10 K and small magnetic fields, |B|<100 mT, for all the studied samples with a maximum amplitude of the magnetoresistance about 460% at T  =  1.4 K. The large increase in the resistivity is most probably caused by the appearance of the superconducting state in the samples at T  <  4.3 K.

  11. Enhanced thermoelectric properties of Co1- x- y Ni x+ y Sb3- x Sn x materials

    NASA Astrophysics Data System (ADS)

    Liu, Hong-Quan; Zhang, Sheng-Nan; Zhu, Tie-Jun; Zhao, Xin-Bing; Gu, Yi-Jie; Cui, Hong-Zhi

    2012-03-01

    Co1- x- y Nix+ y Sb3- x Sn x polycrystals were fabricated by vacuum melting combined with hot-press sintering. The effect of alloying on the thermoelectric properties of unfilled skutterudite Co1- x Ni x Sb3- x Sn x was investigated. A leap of electrical conductivity from the Co0.93Ni0.07Sb2.93Sn0.07 sample to the Co0.88Ni0.12Sb2.88Sn0.12 sample occurs during the measurement of electrical conductivity, indicating the adjustment of band structure by proper alloying. The results show that alloying enhances the power factor of the materials. On the basis of alloying, the thermoelectric properties of Co0.88Ni0.12Sb2.88Sn0.12 are improved by Ni-doping. The thermal conductivities of Ni-doping samples have no reduction, but their power factors have obvious enhancement. The power factor of Co0.81Ni0.19Sb2.88Sn0.12 reaches 3.0 mW·m-1·K-2 by Ni doping. The dimensionless thermoelectric figure of merit reaches 0.55 at 773 K for the unfilled Co0.81Ni0.19 Sb2.88Sn0.12.

  12. Ab-Initio Determination of Novel Crystal Structures of the Thermoelectric Material MgAgSb

    SciTech Connect

    Kirkham, Melanie J; Moreira Dos Santos, Antonio F; Rawn, Claudia J; Lara-Curzio, Edgar; Sharp, Jeff W.; Thompson, Alan

    2012-01-01

    Materials with the half-Heusler structure possess interesting electrical and magnetic properties, including potential for thermoelectric applications. MgAgSb is compositionally and structurally related to many half-Heusler materials, but has not been extensively studied. This work presents the high-temperature X-ray diffraction analysis of MgAgSb between 27 and 420 C, complemented with thermoelectric property measurements. MgAgSb is found to exist in three different structures in this temperature region, taking the half-Heusler structure at high temperatures, a Cu2Sb-related structure at intermediate temperatures, and a previously unreported tetragonal structure at room temperature. All three structures are related by a distorted Mg-Sb rocksalt-type sublattice, differing primarily in the Ag location among the available tetrahedral sites. Transition temperatures between the three phases correlate well with discontinuities in the Seebeck coefficient and electrical conductivity; the best performance occurs with the novel room temperature phase. For application of MgAgSb as a thermoelectric material, it may be desirable to develop methods to stabilize the room temperature phase at higher temperatures.

  13. Investigation of Sn Whisker Growth in Electroplated Sn and Sn-Ag as a Function of Plating Variables and Storage Conditions

    NASA Astrophysics Data System (ADS)

    Chang, Jaewon; Kang, Sung K.; Lee, Jae-Ho; Kim, Keun-Soo; Lee, Hyuck Mo

    2014-01-01

    Sn whiskers are becoming a serious reliability issue in Pb-free electronic packaging applications. Among the numerous Sn whisker mitigation strategies, minor alloying additions to Sn have been proven effective. In this study, several commercial Sn and Sn-Ag baths of low-whisker formulations are evaluated to develop optimum mitigation strategies for electroplated Sn and Sn-Ag. The effects of plating variables and storage conditions, including plating thickness and current density, on Sn whisker growth are investigated for matte Sn, matte Sn-Ag, and bright Sn-Ag electroplated on a Si substrate. Two different storage conditions are applied: an ambient condition (30°C, dry air) and a high-temperature/high-humidity condition (55°C, 85% relative humidity). Scanning electron microscopy is employed to record the Sn whisker growth history of each sample up to 4000 h. Transmission electron microscopy, x-ray diffraction, and focused ion beam techniques are used to understand the microstructure, the formation of intermetallic compounds (IMCs), oxidation, the Sn whisker growth mechanism, and other features. In this study, it is found that whiskers are observed only under ambient conditions for both thin and thick samples regardless of the current density variations for matte Sn. However, whiskers are not observed on Sn-Ag-plated surfaces due to the equiaxed grains and fine Ag3Sn IMCs located at grain boundaries. In addition, Sn whiskers can be suppressed under the high-temperature/high-humidity conditions due to the random growth of IMCs and the formation of thick oxide layers.

  14. {[CuSn5 Sb3 ](2-) }2 : A Dimer of Inhomogeneous Superatoms.

    PubMed

    Wilson, Robert J; Broeckaert, Lies; Spitzer, Fabian; Weigend, Florian; Dehnen, Stefanie

    2016-09-19

    Reaction of the binary Zintl anion (Sn2 Sb2 )(2-) with the β-diketiminato complex [LCu(NCMe)] (L=nacnac=[(N(C6 H3 (i) Pr2 -2,6)C(Me))2 CH](-) ) in ethylenediamine or DMF affords the ternary cluster dimer {[CuSn5 Sb3 ](2-) }2 (1) as its [K(crypt-222)](+) salt. The chemical formulation of 1 is supported by energy-dispersive X-ray spectroscopy (EDX) and quantum chemical calculations. Each monomeric part of the dimer represents a trimetallic "[CuSn5 Sb3 ](2-) " cluster, with an architecture in between a tricapped trigonal prism and a capped square antiprism. As shown by quantum chemical investigations, the presence of Sb atoms and, in particular, of Cu atoms in the cluster skeleton makes the monomeric unit behave like an inhomogeneous superatom, which clearly prefers to dimerize, thereby producing a relatively short, yet virtually non-bonding Cu⋅⋅⋅Cu distance.

  15. Nanoscale structure in AgSbTe2 determined by diffuse elastic neutron scattering

    SciTech Connect

    Specht, Eliot D; Ma, Jie; Delaire, Olivier A; Budai, John D; May, Andrew F; Karapetrova, Evguenia A.

    2015-01-01

    Diffuse elastic neutron scattering measurements confirm that AgSbTe2 has a hierarchical structure, with defects on length scales from nanometers to microns. While scattering from mesoscale structure is consistent with previously-proposed structures in which Ag and Sb order on a NaCl lattice, more diffuse scattering from nanoscale structure suggests a structural rearrangement in which hexagonal layers form a combination of (ABC), (ABA), and (AAB) stacking sequences. The AgCrSe2 structure is the best-fitting model for the local atomic arrangements.

  16. Ge2Sb2Te5/SnSe2 nanocomposite multilayer thin films for phase change memory application

    NASA Astrophysics Data System (ADS)

    Feng, Xiaoyi; Wen, Ting; Zhai, Jiwei; Lai, Tianshu; Wang, Changzhou; Song, Sannian; Song, Zhitang

    2014-10-01

    By nanocompositing Ge2Sb2Te5 and SnSe2, the electrical and thermal proprieties of Ge2Sb2Te5/SnSe2 multilayer films for phase change random access memory (PCRAM) are better than those of Ge2Sb2Te5 films. The crystallization temperature rises and can be controlled. The resistance gap can reach approximately five orders of magnitude to ensure high data reliability. The activity energy (Ea) is more than 2.60 eV and the temperature for 10 year data retention reach 110 °C. The analysis of both XRD patterns and TEM images confirmed the reversible phase change transition between amorphous and crystalline state in Ge2Sb2Te5/SnSe2 nanocomposite multilayer films. According to transient photoreflectance traces, the speed of crystallization process was about 33 ns. Among different Ge2Sb2Te5/SnSe2 multilayer films, the film constitute of [Ge2Sb2Te5 (4 nm)/SnSe2(10 nm)]7 showed better properties and was manufactured by CMOS technology to phase change memory (PCM) cells. This result revealed that the Ge2Sb2Te5/SnSe2 nanocomposite multilayer film is a promising phase change material.

  17. Thermomechanical fatigue behavior of Sn-Ag solder joints

    NASA Astrophysics Data System (ADS)

    Choi, S.; Subramanian, K. N.; Lucas, J. P.; Bieler, T. R.

    2000-10-01

    Microstructural studies of thermomechanically fatigued actual electronic components consisting of metallized alumina substrate and tinned copper lead, soldered with Sn-Ag or 95.5Ag/4Ag/0.5Cu solder were carried out with an optical microscope and environmental scanning electron microscope (ESEM). Damage characterization was made on samples that underwent 250 and 1000 thermal shock cycles between -40°C and 125°C, with a 20 min hold time at each extreme. Surface roughening and grain boundary cracking were evident even in samples thermally cycled for 250 times. The cracks were found to originate on the free surface of the solder joint. With increased thermal cycles these cracks grew by grain boundary decohesion. The crack that will affect the integrity of the solder joint was found to originate from the free surface of the solder very near the alumina substrate and progress towards and continue along the solder region adjacent to the Ag3Sn intermetallic layer formed with the metallized alumina substrate. Re-examination of these thermally fatigued samples that were stored at room temperature after ten months revealed the effects of significant residual stress due to such thermal cycles. Such observations include enhanced surface relief effects delineating the grain boundaries and crack growth in regions inside the joint.

  18. Effect on properties of 42Sn58Bi solder joint by adding the 96.5Sn3.5Ag

    NASA Astrophysics Data System (ADS)

    Tang, Qinghua; Pan, Xiaoguang; Wu, C. M. L.; Chan, Y. C.

    2000-05-01

    The different composition in 42Sn58Bi and 96.5Sn3.5Ag system has been studied. The reflow conditions of various composition pastes were studied, and a suitable adding of Sn-Ag paste could raise the soldering temperature of paste. It was found that the shear tensile strength of solder joint could be improved after adding suitable Sn-Ag to Sn-Bi paste by testing the solder joint tension. The thermal fatigue properties were studied through performed thermal annealing and thermal shocking. The shear tensile strength of solder joints for adding suitable Sn-Ag is higher than the pure Sn- Bi after thermal shocking. The solder property, mechanical and fatigue failure properties of solder joint for adding suitable Sn-Ag could be improved. It was found that suitable Sn-Ag could decrease the porosity in Sn-Bi solder joint thought X-ray and SEM analysis.

  19. The antimony-group 11 chemical bond: Dissociation energies of the diatomic molecules CuSb, AgSb, and AuSb

    SciTech Connect

    Carta, V.; Ciccioli, A. E-mail: andrea.ciccioli@uniroma1.it; Gigli, G. E-mail: andrea.ciccioli@uniroma1.it

    2014-02-14

    The intermetallic molecules CuSb, AgSb, and AuSb were identified in the effusive molecular beam produced at high temperature under equilibrium conditions in a double-cell-like Knudsen source. Several gaseous equilibria involving these species were studied by mass spectrometry as a function of temperature in the overall range 1349–1822 K, and the strength of the chemical bond formed between antimony and the group 11 metals was for the first time measured deriving the following thermochemical dissociation energies (D{sub 0}{sup ∘}, kJ/mol): 186.7 ± 5.1 (CuSb), 156.3 ± 4.9 (AgSb), 241.3 ± 5.8 (AuSb). The three species were also investigated computationally at the coupled cluster level with single, double, and noniterative quasiperturbative triple excitations (CCSD(T)). The spectroscopic parameters were calculated from the potential energy curves and the dissociation energies were evaluated at the Complete Basis Set limit, resulting in an overall good agreement with experimental values. An approximate evaluation of the spin-orbit effect was also performed. CCSD(T) calculations were further extended to the corresponding group 11 arsenide species which are here studied for the first time and the following dissociation energies (D{sub 0}{sup ∘}, kJ/mol): 190 ± 10 (CuAs), 151 ± 10 (AgAs), 240 ± 15 (AuAs) are proposed. Taking advantage of the new experimental and computational information here presented, the bond energy trends along group 11 and 4th and 5th periods of the periodic table were analyzed and the bond energies of the diatomic species CuBi and AuBi, yet experimentally unobserved, were predicted on an empirical basis.

  20. Preparation of the Wire of ZChSnSb11-6 Used for Remanufacturing Thermal Spraying

    NASA Astrophysics Data System (ADS)

    Zhang, B.; Yang, Z. Y.; Fu, D. X.; Li, X. F.; Chen, W.

    Tin base Babbitt alloy widely used in bearing bush production and repair, the performance of ZChSnSb11-6 is better than ZChSnSb8-4.But as a result of as-cast structure of ZChSnSb11-6 is rich in big hard phase, its processing performance is bad, in this paper, through the optimization of smelting, casting, extrusion, drawing and other processes we have been successfully prepared ZChSnSb11-6 wire suitable for thermal spraying. Through metallographic examination, micro hardness, bond strength and porosity testing, it was proved that the wire meet the requirements of bearing manufacturing thermal spraying.

  1. Lead-free solder alloys: Thermodynamic properties of the (Au + Sb + Sn) and the (Au + Sb) system.

    PubMed

    Hindler, Michael; Guo, Zhongnan; Mikula, Adolf

    2012-12-01

    The thermodynamic properties of liquid (Au-Sb-Sn) alloys were studied with an electromotive force (EMF) method using the eutectic mixture of KCl/LiCl with addition of SnCl2 as a liquid electrolyte. Activities of Sn in the liquid alloys were measured at three cross-sections with constant molar ratios of Au:Sb = 2:1, 1:1, and 1:2 with tin in the concentration range between 5 at.% and 90 at.% from the liquidus of the samples up to 1073 K. The integral Gibbs excess energies and the integral enthalpies at 873 K were calculated by Gibbs-Duhem integration. Additionally liquid Au-Sb alloys have been measured at 913 K with the EMF method as no reliable data for the Gibbs excess energies have been found in literature. The eutectic mixture of KCl/LiCl with addition of SbCl3 has been used as an electrolyte for the measurements. The Gibbs excess energies from the (Au + Sb) system were necessary for the integration of the thermodynamic properties of the ternary (Au + Sb + Sn) system.

  2. Metal-nonmetal transition in the sphalerite-type solid solution [ZnSnSb{sub 2}]{sub 1-x}[2(InSb)]{sub x}

    SciTech Connect

    Tenga, Andreas; Javier Garcia-Garcia, F.; Wu, Yang; Newman, N.; Haeussermann, Ulrich

    2009-06-15

    Samples of the solid solution [ZnSnSb{sub 2}]{sub 1-x}[2(InSb)]{sub x} have been prepared over the whole range of composition by tin flux synthesis. The lattice parameter of the sphalerite-type average structure varies linearly between that of the end members ZnSnSb{sub 2} and InSb, a=6.2849(2) and 6.4776(15), respectively. Electron diffraction shows different kinds of structured diffuse scattering for Zn and In rich samples, respectively. The former is attributed to compositional short range ordering, the latter to thermally excited phonon modes. A metal-nonmetal transition takes place between the compositions x=0.8 and x=0.9. - Graphical abstract: Alloys of the sphalerite-type solid solution [ZnSnSb{sub 2}]{sub 1-x}[2(InSb)]{sub x} can be prepared over the whole range of composition by Sn flux synthesis. A metal-nonmetal transition takes place between the compositions x=0.8 and x=0.9.

  3. Search for new topological insulators: ternary Li2AgSb-class semiconductors and related compounds

    NASA Astrophysics Data System (ADS)

    Lin, Hsin; Das, Tanmoy; Wang, Y. J.; Wray, L. A.; Xu, S.-Y.; Hasan, M. Z.; Bansil, Arun

    2012-02-01

    Topological insulators host a rare quantum phase of electrons which is characterized by a topological invariant number of bulk states of combined spin-orbit and time-reversal symmetry origin. Despite recent progress the available classes of topological insulators are still quite limited for use in device applications and experimental exploration of exotic topological phenomena. For this reason, the search for new materials with greater structural flexibility and tunability in various local order broken symmetry phases is continuing worldwide with great intensity. Here we discuss our effort based on first-principles calculations to show that the adiabatic continuation method can provide a very powerful tool for predicting non-trivial topological phases with the example of ternary intermetallic series, Li2M'X (M'=Cu, Ag, Au, and Cd, X=Sb, Bi, and Sn) as well as other compounds with zinc-blende type sublattice. [1-3] Work supported by the Office of Basic Energy Sciences, US DOE.[1] H. Lin, et al. Nature Materials 9, 546 (2010). [2] Y. J. Wang, et al. New J. Phys. 13, 085017 (2011). [3] H. Lin, et al., arXiv:1007.5111.

  4. Particulate contacts to Si and CdTe: Al, Ag, Hg-Cu-Te, and Sb-Te

    NASA Astrophysics Data System (ADS)

    Schulz, Douglas L.; Ribelin, Rosine; Curtis, Calvin J.; Ginley, David S.

    1999-03-01

    Our team has been investigating the use of particle-based contacts in both Si and CdTe solar cell technologies. First, in the area of contacts to Si, powders of Al and Ag prepared by an electroexplosion process have been characterized by transmission electron microscopy (TEM), TEM elemental determination X-ray spectroscopy (TEM-EDS), and TEM electron diffraction (TEM-ED). These Al and Ag particles were slurried and tested as contacts to p- and n-type silicon wafers, respectively. Linear current-voltage (I-V) was observed for Ag on n-type Si, indicative of an ohmic contact, whereas the Al on p-type Si sample was non-ideal. A wet-chemical surface treatment was performed on one Al sample and TEM-EDS indicated a substantial decrease in the O contaminant level. The treated Al on p-type Si films exhibited linear I-V after annealing. Second, in the area of contacts to CdTe, particles of Hg-Cu-Te and Sb-Te have been applied as contacts to CdTe/CdS/SnO2 heterostructures prepared by the standard NREL protocol. First, Hg-Cu-Te and Sb-Te were prepared by a metathesis reaction. After CdCl2 treatment and NP etch of the CdTe layer, particle contacts were applied. The Hg-Cu-Te contacted cells exhibited good electrical characteristics, with Voc>810 mV and efficiencies > 11.5% for most cells. Although Voc>800 mV were observed for the Sb-Te contacted cells, efficiencies in these devices were limited to 9.1% presumably by a large series resistance (>20 Ω) observed in all samples.

  5. Theoretical prediction of thermodynamic activities of liquid Au-Sn-X (X=Bi, Sb, Zn) solder systems

    NASA Astrophysics Data System (ADS)

    Awe, O. E.; Oshakuade, O. M.

    2017-02-01

    Molecular interaction volume model has been theoretically used to predict the thermodynamic activities of tin in Au-Sn-Bi and Au-Sn-Sb and the thermodynamic activity of zinc in Au-Sn-Zn at experimental temperatures 800 K, 873 K and 973 K, respectively. On the premise of agreement between the predicted and experimental values, we predicted the activities of the remaining two components in each of the three systems. This prediction was extended from three cross-sections to five cross-sections, and to temperature range 400-600 K, relevant for applications. Iso-activities were plotted. Results show that addition of tin reduces the tendency for chemical short range order in both Au-Sb and Au-Zn systems, while addition of gold and bismuth, respectively, reduce the tendency for chemical short range order in Sn-Sb and Au-Sn systems. Also, we found that, in the desired high-temperature region for applications, while a combination of chemical order and miscibility of components exist in both Au-Sn-Bi and Au-Sn-Zn systems, only chemical order exist in the Au-Sn-Sb system. Results, further show that increase in temperature reduces the phase separation tendency in Au-Sn-Bi system.

  6. EBSD Investigation of Cu-Sn IMC Microstructural Evolution in Cu/Sn-Ag/Cu Microbumps During Isothermal Annealing

    NASA Astrophysics Data System (ADS)

    Wang, S. J.; Hsu, L. H.; Wang, N. K.; Ho, C. E.

    2014-01-01

    The microstructural evolution of Cu/Sn-Ag (~5 μm)/Cu Cu-bump-on-line (CuBOL) joints during isothermal annealing at 180°C was examined using a field-emission scanning electron microscope equipped with an electron backscatter diffraction (EBSD) system. Cu6Sn5 and Cu3Sn were the two key intermetallic compound (IMC) species that appeared in the CuBOL joints. After annealing for 24 h (= t), the solder had completely converted to Cu-Sn IMCs, forming an "IMC" joint with Cu/Cu3Sn/Cu6Sn5/Cu3Sn/Cu structure. EBSD analyses indicated that the preferred orientation of the hexagonal Cu6Sn5 (η) was , while the preferred orientation was (100) for the monoclinic Cu6Sn5 structure (η'). Upon increasing t to 72 h, Cu6Sn5 entirely transformed into Cu3Sn, and the IMC joint became Cu/Cu3Sn/Cu accordingly. Interestingly, the grain size and crystallographic orientation of Cu3Sn displayed location dependence. Detailed EBSD analyses in combination with transmission electron microscopy on Cu3Sn were performed in the present study. This research offers better understanding of crystallographic details, including crystal structure, grain size, and orientation, for Cu6Sn5 and Cu3Sn in CuBOL joints after various annealing times.

  7. Surfactant-mediated layer-by-layer homoepitaxial growth of Cu/In/Cu(100) and Ag/Sb/Ag(111) systems: A theoretical study

    NASA Astrophysics Data System (ADS)

    Jiang, Ming; Zhao, Yu-Jun; Cao, Pei-Lin

    1998-04-01

    Two typical surfactant-mediated homoepitaxial metal systems, Cu/In/Cu(100) and Ag/Sb/Ag(111), are studied by using first-principles calculations and a kinetic Monte Carlo method. Our results confirm the validity of the model that Zhang and Lagally suggested for Cu/In/Cu(100) system. A repulsion model is proposed for the Ag/Sb/Ag(111) system where surface-substitutional Sb atoms repel diffusing Ag adatoms. The layer-by-layer growth for Ag/Sb/Ag(111) system is achieved with a repulsion model in kinetic Monte Carlo simulation. By comparing the two different growth models, the importance of the additional barrier ΔE and effectiveness of two ways of reducing ΔE are confirmed in determining film morphology.

  8. Effects on Undercooling and Interfacial Reactions with Cu Substrates of Adding Bi and In to Sn-3Ag Solder

    NASA Astrophysics Data System (ADS)

    Chiang, Yu-Yan; Cheng, Robbin; Wu, Albert T.

    2010-11-01

    This study investigated the effects of adding Bi and In to Sn-3Ag Pb-free solder on undercooling, interfacial reactions with Cu substrates, and the growth kinetics of intermetallic compounds (IMCs). The amount of Sn dominates the undercooling, regardless of the amount or species of further additives. The interfacial IMC that formed in Sn-Ag-Bi-In and Sn-In-Bi solders is Cu6Sn5, while that in Sn-Ag-In solders is Cu6(Sn,In)5, since Bi enhances the solubility of In in Sn matrices. The activation energy for the growth of IMCs in Sn-Ag-Bi-In is nearly double that in Sn-Ag-In solders, because Bi in the solder promotes Cu dissolution. The bright particles that form inside the Sn-Ag-In bulk solders are the ζ-phase.

  9. Sn-Ag-Cu Nanosolders: Solder Joints Integrity and Strength

    NASA Astrophysics Data System (ADS)

    Roshanghias, Ali; Khatibi, Golta; Yakymovych, Andriy; Bernardi, Johannes; Ipser, Herbert

    2016-08-01

    Although considerable research has been dedicated to the synthesis and characterization of lead-free nanoparticle solder alloys, only very little has been reported on the reliability of the respective joints. In fact, the merit of nanoparticle solders with depressed melting temperatures close to the Sn-Pb eutectic temperature has always been challenged when compared with conventional solder joints, especially in terms of inferior solderability due to the oxide shell commonly present on the nanoparticles, as well as due to compatibility problems with common fluxing agents. Correspondingly, in the current study, Sn-Ag-Cu (SAC) nanoparticle alloys were combined with a proper fluxing vehicle to produce prototype nanosolder pastes. The reliability of the solder joints was successively investigated by means of electron microscopy and mechanical tests. As a result, the optimized condition for employing nanoparticles as a competent nanopaste and a novel procedure for surface treatment of the SAC nanoparticles to diminish the oxide shell prior to soldering are being proposed.

  10. Crystal structure of [Ag(NH3)3]2[Ag(NH3)2]2[SnF6]F2, a compound showing argentophilic inter­actions

    PubMed Central

    Kraus, Florian; Fichtl, Matthias; Baer, Sebastian

    2016-01-01

    Bis[triamminesilver(I)] bis­[diamminesilver(I)] hexa­fluorido­stannate(IV) difluoride, [Ag(NH3)3]2[Ag(NH3)2]2[SnF6]F2, was obtained in the form of colourless crystals from the reaction of CsAgSnF7 in anhydrous ammonia. Two different ammine complexes of silver(I) are present in the structure, i.e. a linear diammine and a T-shaped triammine complex. The ammine silver(I) complexes show Ag⋯Ag distances in the range of argentophilic inter­actions. In the crystal, several N—H⋯F hydrogen bonds are present between the complex cations and the SbF6 − and F− anions, leading to the formation of a three-dimensional network. PMID:27980850

  11. Microstructure and a Nucleation Mechanism for Nanoprecipitates In PbTe-AgSbTe2

    SciTech Connect

    Ke, X.; Chen, C.; Yang, J.; Wu, L.; Zhou, J.; Li, Q.; Zhu, Y.; Kent, P.R.C.

    2009-10-02

    Many recent advances in thermoelectric (TE) materials are attributed to their nanoscale constituents. Determination of the nanocomposite structures has represented a major experimental and computational challenge and eluded previous attempts. Here we present the first atomically resolved structures of high performance TE material PbTe-AgSbTe{sub 2} by transmission electron microscopy imaging and density functional theory calculations. The results establish an accurate structural characterization for PbTe-AgSbTe{sub 2} and identify the interplay of electric dipolar interactions and strain fields as the driving mechanism for nanoprecipitate nucleation and aggregation.

  12. Effects of Sn Substitution on Thermoelectric Properties of Ge4SbTe5

    NASA Astrophysics Data System (ADS)

    Williams, Jared B.; Mather, Spencer; Morelli, Donald T.

    2016-02-01

    Phase-change materials are identified by their ability to rapidly alternate between amorphous and crystalline phases upon heating, exhibiting large contrast in the optical/electrical properties of the respective phases. Such materials are primarily used in memory storage applications, but recently they have also been identified as potential thermoelectric materials. Many of the phase-change materials studied today can be found on the pseudobinary (GeTe)1- x (Sb2Te3) x tie-line. Ge4SbTe5, a single-phase compound just off of the (GeTe)1- x (Sb2Te3) x tie-line, forms in a metastable rocksalt crystal structure at room temperature. It has been found that stoichiometric and undoped Ge4SbTe5 exhibits thermal conductivity of ~1.2 W/m-K at high temperature and a dramatic decrease in electrical resistivity at 623 K due to a structural phase transition, which leads to a large enhancement in both thermoelectric power factor and thermoelectric figure of merit at 823 K. Introducing point defects via isoelectronic substitutions can be an effective means of reducing thermal conductivity and enhancing thermoelectric performance. We present a study of the effects of Sn substitution for Ge on the electrical and thermal transport properties of Ge4SbTe5.

  13. Unusual magnetic hysteresis and the weakened transition behavior induced by Sn substitution in Mn{sub 3}SbN

    SciTech Connect

    Sun, Ying; Guo, Yanfeng; Li, Jun; Wang, Xia; Tsujimoto, Yoshihiro; Wang, Cong; Feng, Hai L.; Sathish, Clastin I.; Yamaura, Kazunari; Matsushita, Yoshitaka

    2014-01-28

    Substitution of Sb with Sn was achieved in ferrimagnetic antiperovskite Mn{sub 3}SbN. The experimental results indicate that with an increase in Sn concentration, the magnetization continuously decreases and the crystal structure of Mn{sub 3}Sb{sub 1-x}Sn{sub x}N changes from tetragonal to cubic phase at around x of 0.8. In the doping series, step-like anomaly in the isothermal magnetization was found and this behavior was highlighted at x = 0.4. The anomaly could be attributed to the magnetic frustration, resulting from competition between the multiple spin configurations in the antiperovskite lattice. Meantime, H{sub c} of 18 kOe was observed at x = 0.3, which is probably the highest among those of manganese antiperovskite materials reported so far. With increasing Sn content, the abrupt change of resistivity and the sharp peak of heat capacity in Mn{sub 3}SbN were gradually weakened. The crystal structure refinements indicate the weakened change at the magnetic transition is close related to the change of c/a ratio variation from tetragonal to cubic with Sn content. The results derived from this study indicate that the behavior of Mn{sub 3}Sb{sub 1-x}Sn{sub x}N could potentially enhance its scientific and technical applications, such as spin torque transfer and hard magnets.

  14. Enhancing electrocatalytic performance of Sb-doped SnO ₂ electrode by compositing nitrogen-doped graphene nanosheets.

    PubMed

    Duan, Tigang; Wen, Qing; Chen, Ye; Zhou, Yiding; Duan, Ying

    2014-09-15

    An efficient Ti/Sb-SnO2 electrode modified with nitrogen-doped graphene nanosheets (NGNS) was successfully fabricated by the sol-gel and dip coating method. Compared with Ti/Sb-SnO2 electrode, the NGNS-modified electrode possesses smaller unite crystalline volume (71.11Å(3) vs. 71.32Å(3)), smaller electrical resistivity (13Ωm vs. 34Ωm), and lower charge transfer resistance (10.91Ω vs. 21.01Ω). The accelerated lifetime of Ti/Sb-SnO2-NGNS electrode is prolonged significantly, which is 4.45 times as long as that of Ti/Sb-SnO2 electrode. The results of X-ray photoelectron spectroscopy measurement and voltammetric charge analysis indicate that introducing NGNS into the active coating can increase more reaction active sites to enhance the electrocatalytic efficiency. The electrochemical dye decolorization analysis demonstrates that Ti/Sb-SnO2-NGNS presents efficient electrocatalytic performance for methylene blue and orange II decolorization. And its pseudo-first order kinetic rate constants for methylene blue and orange II decolorization are 36.6 and 44.0 min(-1), respectively, which are 6.0 and 7.1 times as efficient as those of Ti/Sb-SnO2, respectively. Considering the significant electrocatalytic activity and low resistivity of Ti/Sb-SnO2-NGNS electrode, the cost of wastewater treatment can be expected to be reduced obviously and the application prospect is broad.

  15. Contact angle measurements of Sn-Ag and Sn-Cu lead-free solders on copper substrates

    NASA Astrophysics Data System (ADS)

    Arenas, Mario F.; Acoff, Viola L.

    2004-12-01

    In this study, the contact angles of four lead-free solders, namely, Sn-3.5Ag, Sn-3.5Ag-4.8Bi, Sn-3.8Ag-0.7Cu, and Sn-0.7Cu (wt.%), were measured on copper substrates at different temperatures. Measurements were performed using the sessile-drop method. Contact angles ranging from 30° to 40° after wetting under vacuum with no fluxes and between 10° and 30° with rosin mildly activated (RMA) and rosin activated (RA) fluxes were obtained. The Sn-3.5Ag-4.8Bi exhibited the lowest contact angles, indicating improved wettability with the addition of bismuth. For all soldering alloys, lower contact angles were observed using RMA flux. Intermetallics formed at the solder/Cu interface were identified as Cu6Sn5 adjacent to the solder and Cu3Sn adjacent to the copper substrate. The Cu3Sn intermetallic phase was generally not observed when RMA flux was used. The effect of temperature on contact angle was dependent on the type of flux used.

  16. Thermoelectric properties of n-type Nb-doped Ag8SnSe6

    NASA Astrophysics Data System (ADS)

    Zhang, Xiao; Zhang, Cheng-Long; Lin, Siqi; Lu, Hong; Pei, Yanzhong; Jia, Shuang

    2016-04-01

    Electrical and thermoelectric (TE) properties for n-type Ag8SnSe6 and ( Ag1- x Nb x ) 8 SnSe 6 are investigated. Ag8SnSe6 has the thermoelectric figure of merit (ZT) close to 1.1 at 803 K due to its intrinsic ultralow thermal conductivity ˜ 0.3 Wm - 1 K - 1 , relatively low resistivity ˜0.01 Ω cm, and high Seebeck coefficient ˜-200 μV/K. The ZT for pure Ag8SnSe6 drops to 0.02 at room temperature due to its large resistivity. Niobium doping increases the carrier concentration nearly 10 times and thus enhances its ZT to 0.11 at room temperature. Ag8SnSe6 is a promising n-type candidate of TE materials which needs further elaborations.

  17. Thermoelectric properties of AgSbTe₂ from first-principles calculations

    SciTech Connect

    Rezaei, Nafiseh; Akbarzadeh, Hadi; Hashemifar, S. Javad

    2014-09-14

    The structural, electronic, and transport properties of AgSbTe₂ are studied by using full-relativistic first-principles electronic structure calculation and semiclassical description of transport parameters. The results indicate that, within various exchange-correlation functionals, the cubic Fd3⁻m and trigonal R3⁻m structures of AgSbTe₂ are more stable than two other considered structures. The computed Seebeck coefficients at different values of the band gap and carrier concentration are accurately compared with the available experimental data to speculate a band gap of about 0.1–0.35 eV for AgSbTe₂ compound, in agreement with our calculated electronic structure within the hybrid HSE (Heyd-Scuseria-Ernzerhof) functional. By calculating the semiclassical Seebeck coefficient, electrical conductivity, and electronic part of thermal conductivity, we present the theoretical upper limit of the thermoelectric figure of merit of AgSbTe₂ as a function of temperature and carrier concentration.

  18. Synthesis and structural characterization of heteroboroxines with MB2O3 core (M = Sb, Bi, Sn).

    PubMed

    Mairychová, Barbora; Svoboda, Tomáš; Štěpnička, Petr; Růžička, Aleš; Havenith, Remco W A; Alonso, Mercedes; De Proft, Frank; Jambor, Roman; Dostál, Libor

    2013-02-04

    Reaction of organoantimony and organobismuth oxides (LSbO)(2) and (LBiO)(2) (where L is [2,6-bis(dimethylamino)methyl]phenyl) with four equivalents of the organoboronic acids gave new heteroboroxines LM[(OBR)(2)O] 1a-2c (for M = Sb: R = Ph (1a), 4-CF(3)C(6)H(4) (1b), ferrocenyl (1c); for M = Bi: R = Ph (2a), 4-CF(3)C(6)H(4) (2b), and ferrocenyl (2c)). Analogously, reaction between organotin carbonate L(Ph)Sn(CO(3)) and two equivalents of organoboronic acids yielded compounds L(Ph)Sn[(OBR)(2)O] (where R = Ph (3a), 4-CF(3)C(6)H(4) (3b), and ferrocenyl (3c)). All compounds were characterized by elemental analysis and NMR spectroscopy. Their structure was described both in solution (NMR studies) and in the solid state (X-ray diffraction analyses 1a, 1c, 2b, 3b, and 3c). All compounds contain a central MB(2)O(3) core (M = Sb, Bi, Sn), and the bonding situation within these rings and their potential aromaticity was investigated by the help of computational methods.

  19. The Influence of Cu on Metastable NiSn4 in Sn-3.5Ag- xCu/ENIG Joints

    NASA Astrophysics Data System (ADS)

    Belyakov, S. A.; Gourlay, C. M.

    2016-01-01

    We have investigated the effect of small amounts of Cu on suppression of metastable βSn-NiSn4 eutectic growth in solder joints between Sn-3.5Ag- xCu solders and Ni-based substrates. For Sn-3.5Ag/electroless nickel immersion gold (ENIG) and Sn-3.5Ag/Ni solder joints we showed that the eutectic mixture contains βSn, Ag3Sn, and metastable NiSn4. It was found that addition of only 0.005 wt.% Cu to Sn-3.5Ag- xCu/ENIG or Sn-3.5Ag- xCu/Ni joints promoted formation of a stable βSn-Ni3Sn4 eutectic and that both Ni3Sn4 and NiSn4 occur in the eutectic at this Cu level. We also showed that for complete prevention of formation of metastable NiSn4 during eutectic solidification of the solder joint, addition of at least 0.3 wt.% Cu was required.

  20. A New Family of Nonstoichiometric Layered Rare-Earth Tin Antimonides, RESn(x)()Sb(2) (RE = La, Ce, Pr, Nd, Sm): Crystal Structure of LaSn(0.75)Sb(2).

    PubMed

    Ferguson, Michael J.; Hushagen, Ryan W.; Mar, Arthur

    1996-07-17

    A new class of nonstoichiometric layered ternary rare-earth tin antimonides, RESn(x)()Sb(2) (RE = La, Ce, Pr, Nd, Sm), has been synthesized through reaction of the elements at 950 degrees C. In the lanthanum series LaSn(x)()Sb(2), tin can be incorporated from a maximum content of x approximately 0.7 or 0.8 to as low as x approximately 0.10. The structure of lanthanum tin diantimonide with the maximum tin content, LaSn(0.75)Sb(2), has been determined by single-crystal X-ray diffraction methods. It crystallizes in the orthorhombic space group -Cmcm with a = 4.2425(5) Å, b = 23.121(2) Å, c = 4.5053(6) Å, and Z = 4. The isostructural rare-earth analogues were characterized by powder X-ray diffraction. The structure of LaSn(0.75)Sb(2) comprises layers of composition "LaSb(2)" in which La atoms are coordinated by Sb atoms in a square-antiprismatic geometry. Between these layers reside chains of Sn atoms distributed over three crystallographically independent sites, each partially occupied at about 20%. The structure of LaSn(0.75)Sb(2) can be regarded as resulting from the excision of RE-Sb and Sb-Sb bonds in the related structures of binary rare-earth diantimonides, RESb(2), and then intercalation of Sn atoms between layers.

  1. Preparation and Sintering Properties of Ag27Cu2Sn Nanopaste as Die Attach Material

    NASA Astrophysics Data System (ADS)

    Liu, Xiaojian; Liu, Wei; Wang, Chunqing; Zheng, Zhen; Kong, Lingchao

    2016-10-01

    Ag27Cu2Sn nanopaste has been prepared by mixing Ag, Cu, and Sn nanoparticles with an organic solvent system. Sintering and mechanical properties of this nanopaste were characterized and investigated. Effects of sintering temperature and time on the sintered microstructure of the nanopaste and shear strength of Cu/Ag27Cu2Sn/Cu structure were analyzed. The results showed that the organic shells coated on the outside of metal nanoparticles could effectively prevent metal nanoparticles from being oxidized below 480°C. When the paste was sintered at 480°C without pressure, few voids or large particles formed within the sintered layer and distributions of Ag, Cu, and Sn were quite uniform. This sintering temperature was much lower than the eutectic temperature (779°C) of Ag-Cu bulk material. Moreover, mutual solid solubilities of Ag and Cu were increased remarkably, which may be caused by high surface activity of Ag and Cu nanoparticles and the important role of the Sn addition. Shear strength of samples with Cu/Ag27Cu2Sn/Cu structure could reach 21 MPa, which could compare with that of Ag nanopaste or conductive adhesives.

  2. Elemental Topological Insulator with Tunable Fermi Level: Strained α-Sn on InSb(001)

    NASA Astrophysics Data System (ADS)

    Barfuss, A.; Dudy, L.; Scholz, M. R.; Roth, H.; Höpfner, P.; Blumenstein, C.; Landolt, G.; Dil, J. H.; Plumb, N. C.; Radovic, M.; Bostwick, A.; Rotenberg, E.; Fleszar, A.; Bihlmayer, G.; Wortmann, D.; Li, G.; Hanke, W.; Claessen, R.; Schäfer, J.

    2013-10-01

    We report on the epitaxial fabrication and electronic properties of a topological phase in strained α-Sn on InSb. The topological surface state forms in the presence of an unusual band order not based on direct spin-orbit coupling, as shown in density functional and GW slab-layer calculations. Angle-resolved photoemission including spin detection probes experimentally how the topological spin-polarized state emerges from the second bulk valence band. Moreover, we demonstrate the precise control of the Fermi level by dopants.

  3. Prediction of Phase Formation in Nanoscale Sn-Ag-Cu Solder Alloy

    NASA Astrophysics Data System (ADS)

    Wu, Min; Lv, Bailin

    2016-01-01

    In a dynamic nonequilibrium process, the effective heat of formation allows the heat of formation to be calculated as a function of concentrations of the reacting atoms. In this work, we used the effective heat of formation rule to predict the formation and size of compound phases in a nanoscale Sn-Ag-Cu lead-free solder. We calculated the formation enthalpy and effective formation enthalpy of compounds in the Sn-Ag, Sn-Cu, and Ag-Cu systems by using the Miedema model and effective heat of formation. Our results show that, considering the surface effect of the nanoparticle, the effective heat of formation rule successfully predicts the phase formation and sizes of Ag3Sn and Cu6Sn5 compounds, which agrees well with experimental data.

  4. Influence of Ag and Sn incorporation in In2S3 thin films

    NASA Astrophysics Data System (ADS)

    Lin, Ling-Yan; Yu, Jin-Ling; Cheng, Shu-Ying; Lu, Pei-Min

    2015-07-01

    Ag- and Sn-doped In2S3 thin films were deposited on glass substrates using the thermal evaporation technique. The doping was realized by thermal diffusion. The influences of Ag and Sn impurities on the electrical, structural, morphological, and optical properties of the In2S3 films were investigated. In all deposited samples, the x-ray diffraction spectra revealed the formation of cubic In2S3 phase. A significant increase in the crystallite size was observed after Ag doping, while the doping of Sn slightly decreased the crystallite size. The x-ray photoelectron spectroscopy verified the diffusion of Ag and Sn into the In2S3 films after annealing. The optical study illustrated that Ag doping resulted in a reduction of the optical band gap while Sn doping led to a widening of the gap. Optical properties were investigated to determine the optical constants. Besides, it was found that the resistivity decreases significantly either after Ag or Sn incorporation. The study demonstrates that the Sn-doped In2S3 thin films are more suitable for buffer layer application in solar cells than the Ag-doped In2S3 thin films. Project supported by the National Natural Science Foundation of China (Grant Nos. 61076063, 61340051, and 61306120) and the Natural Science Foundation of Fujian Province, China (Grant No. 2014J05073).

  5. Morphology and Pull Strength of Sn-Ag(-Co) Solder Joint with Copper Pad

    NASA Astrophysics Data System (ADS)

    Nishikawa, Hiroshi; Komatsu, Akira; Takemoto, Tadashi

    2007-09-01

    In order to clarify the effect of the addition of Co to the Sn-Ag solder, the formation and growth of an intermetallic compound (IMC) at the interface between Sn-Ag(-Co) solders and a Cu pad were investigated, and the joint strength of the solder with a Cu pad was also evaluated by a bump pull test. Binary Sn-3.5mass%Ag solder was used as the basic solder, and Sn-3.5mass%Ag-xCo solders (x = 0.1 mass%, 0.3 mass%, and 0.5 mass%) were specially prepared as Co-added solders. For the reflow process, specimens were heated in a radiation furnace at 523 K for 60 s. For the aging process, some specimens were then heat-treated in an oil bath at 423 K for 168 h, 504 h, and 1008 h. The results show that the addition of Co to the Sn-Ag solder strongly affected the formation and growth of the IMC at the interface. The results of the pull test clearly show that all solders had similar pull strengths, regardless of the Co addition, although the IMC morphology at the interface of the Sn-Ag-Co solder was quite different from that of the binary Sn-3.5Ag solder.

  6. Preparation and photocatalytic properties of AgI–SnO{sub 2} nano-composites

    SciTech Connect

    Wen, Biao; Wang, Xiao-Hui; Lu, Juan; Cao, Jia-Lei; Wang, Zuo-Shan

    2013-05-15

    Highlights: ► AgI–SnO{sub 2} nano-composites have been successfully synthesized. ► As-prepared AgI–SnO{sub 2} nano-composites own the excellent visible light photocatalytic activity. ► As-prepared AgI–SnO{sub 2} nano-composites own the excellent stability. - Abstract: AgI doped SnO{sub 2} nano-composites were prepared by the chemical coprecipitation method and were characterized by the X-ray diffraction, transmission electron microscopy and X-ray photoelectron spectroscopy. Results showed that main of the I{sup −} ions remained in the AgI lattice which is highly dispersed in the system. The photo-catalytic experiments performed under visible light irradiation using methylene blue as the pollutant revealed that not only the photo-catalytic activity but also the stability of SnO{sub 2} based photocatalyst could be improved by introduction of an appropriate amount of AgI, and the result was further supported by the UV–Vis diffuse reflection spectra and the electron spin-resonance spectra. Among all of the samples, AgI–SnO{sub 2} nano-composite with 2At% AgI exhibited the best catalytic efficiency and stability.

  7. Aging Characteristics of Sn-Ag Eutectic Solder Alloy with the Addition of Cu, In, and Mn

    NASA Astrophysics Data System (ADS)

    Ghosh, M.; Kar, Abhijit; Das, S. K.; Ray, A. K.

    2009-10-01

    In the present investigation, three types of solder alloy, i.e., Sn-Ag-Cu, Sn-Ag-In, and Sn-Ag-Cu-Mn, have been prepared and joined with Cu substrate. In the reflowed condition, the joint interface is decorated with Cu6Sn5 intermetallic in all cases. During aging at 100 °C for 50 to 200 hours, Cu3Sn formation took place in the diffusion zone of the Sn-Ag-Cu and Sn-Ag-In vs Cu assembly, which was not observed for the Sn-Ag-Cu-Mn vs Cu joint. Aging also leads to enhancement in the width of reaction layers; however, the growth is sluggish (~134 KJ/mol) for the Sn-Ag-Cu-Mn vs Cu transition joint. In the reflowed condition, the highest shear strength is obtained for the Sn-Ag-Cu-Mn vs Cu joint. Increment in aging time results in decrement in shear strength of the assemblies; yet small reduction is observed for the Sn-Ag-Cu-Mn vs Cu joint. The presence of Mn in the solder alloy is responsible for the difference in microstructure of the Sn-Ag-Cu-Mn solder alloy vs Cu assembly in the reflowed condition, which in turn influences the microstructure of the same after aging with respect to others.

  8. Spin pumping and inverse Rashba-Edelstein effect in NiFe/Ag/Bi and NiFe/Ag/Sb

    SciTech Connect

    Zhang, Wei Jungfleisch, Matthias B.; Jiang, Wanjun; Pearson, John E.; Hoffmann, Axel

    2015-05-07

    The Rashba effect is an interaction between the spin and the momentum of electrons induced by the spin-orbit coupling in surface or interface states. We measured the inverse Rashba-Edelstein effect via spin pumping in Ag/Bi and Ag/Sb interfaces. The spin current is injected from the ferromagnetic resonance of a NiFe layer towards the Rashba interfaces, where it is further converted into a charge current. Using spin pumping theory, we quantify the conversion parameter of spin to charge current to be 0.11 ± 0.02 nm for Ag/Bi and a factor of ten smaller for Ag/Sb. The relative strength of the effect is in agreement with spectroscopic measurements and first principles calculations. We also vary the interlayer materials to study the voltage output in relation to the change of the effective spin mixing conductance. The spin pumping experiment offers a straight-forward approach of using spin current as an efficient probe for detecting interface Rashba splitting.

  9. Alloying effects in near-eutectic Sn-Ag-Cu solder alloys for improved microstructural stability

    NASA Astrophysics Data System (ADS)

    Anderson, I. E.; Foley, J. C.; Cook, B. A.; Harringa, J.; Terpstra, R. L.; Unal, O.

    2001-09-01

    This study included a comparison of the baseline Sn-3.5Ag eutectic to one near-eutectic ternary alloy, Sn-3.6 Ag-1.0Cu and two quaternary alloys, Sn-3.6Ag-1.0Cu-0.15Co and Sn-3.6Ag-1.0 Cu-0.45 Co, to increase understanding of the beneficial effects of Co on Sn-Ag-Cu solder joints cooled at 1 3 C/sec, typical of reflow practice. The results indicated that joint microstructure refinement is due to Co-enhanced nucleation of the Cu6Sn5 phase in the solder matrix, as suggested by Auger elemental mapping and calorimetric measurements. The Co also reduced intermetallic interface faceting and improved the ability of the solder joint samples to maintain their shear strength after aging for 72 hr at 150 C. The baseline Sn-3.5Ag joints exhibited significantly reduced strength and coarser microstructures.

  10. Monodisperse AgSbS2 nanocrystals: size-control strategy, large-scale synthesis, and photoelectrochemistry.

    PubMed

    Zhou, Bin; Li, Mingrun; Wu, Yihui; Yang, Chi; Zhang, Wen-Hua; Li, Can

    2015-07-27

    We report an efficient approach to the synthesis of AgSbS2 nanocrystals (NCs) by colloidal chemistry. The size of the AgSbS2 NCs can be tuned from 5.3 to 58.3 nm with narrow size distributions by selection of appropriate precursors and fine control of the experimental conditions. Over 15 g of high-quality AgSbS2 NCs can be obtained from one single reaction, indicative of the up-scalability of the present synthesis. The resulting NCs display strong absorptions in the visible-to-NIR range and exceptional air stability. The photoelectrochemical measurements indicate that, although the pristine AgSbS2 NC electrodes generate a cathodic photocurrent with a relatively small photocurrent density and poor stability, both of them can be significantly improved subject to CdS surface modification, showing promise in solar energy conversion applications.

  11. Effect of rare earth metal Ce addition to Sn-Ag solder on interfacial reactions with Cu substrate

    NASA Astrophysics Data System (ADS)

    Yoon, Jeong-Won; Noh, Bo-In; Jung, Seung-Boo

    2014-05-01

    The effect of adding a small amount of rare earth cerium (Ce) element to low Ag containing Sn-1wt%Ag Pb-free solder on its interfacial reactions with Cu substrate was investigated. The growth of intermetallic compounds (IMCs) between three Sn-1Ag-xCe solders with different Ce contents and a Cu substrate was studied and the results were compared to those obtained for the Ce-free Sn-1Ag/Cu systems. In the solid-state reactions of the Sn-1Ag(-xCe)/Cu solder joints, the two IMC layers, Cu6Sn5 and Cu3Sn, grew as aging time increased. Compared to the Sn-1Ag/Cu joint, the growth of the Cu6Sn5 and Cu3Sn layers was depressed for the Ce-containing Sn-1Ag-xCe/Cu joint. The addition of Ce to the Sn-Ag solder reduced the growth of the interfacial Cu-Sn IMCs and prevented the IMCs from spalling from the interface. The evenly-distributed Ce elements in the solder region blocked the diffusion of Sn atoms to the interface and retarded the growth of the interfacial IMC layer.

  12. Glass-like phonon scattering from a spontaneous nanostructure in AgSbTe2

    SciTech Connect

    Ma, J.; Delaire, O.; May, A. F.; Carlton, C. E.; McGuire, M. A.; VanBebber, L. H.; Abernathy, D. L.; Ehlers, G.; Hong, Tao; Huq, A.; Tian, Wei; Keppens, V. M.; Shao-Horn, Y.; Sales, B. C.

    2013-06-02

    Materials with very low thermal conductivity are of high interest for both thermoelectric and optical phase-change applications. Synthetic nanostructuring is most promising to suppress thermal conductivity by scattering phonons, but challenges remain in producing bulk samples. We show that in crystalline AgSbTe2, a spontaneously-forming nanostructure leads to a suppression of thermal conductivity to a glass-like level. Our mappings of phonon mean-free-paths provide a novel bottom- up microscopic account of thermal conductivity, and also reveal intrinsic anisotropies associated with the nanostructure. Ground-state degeneracy in AgSbTe2 leads to the natural formation of nanoscale domains with different orderings on the cation sublattice, and correlated atomic displacements, which efficiently scatter phonons. This mechanism is general and points to a new avenue in nano- scale engineering of materials, to achieve low thermal conductivities for efficient thermoelectric converters and phase-change memory devices.

  13. Structural, elastic, electronic, and thermodynamic properties of MgAgSb investigated by density functional theory

    NASA Astrophysics Data System (ADS)

    Wang, Jun-Fei; Fu, Xiao-Nan; Zhang, Xiao-Dong; Wang, Jun-Tao; Li, Xiao-Dong; Jiang, Zhen-Yi

    2016-08-01

    The structural, elastic, electronic, and thermodynamic properties of thermoelectric material MgAgSb in γ,β,α phases are studied with first-principles calculations based on density functional theory. The optimized lattice constants accord well with the experimental data. According to the calculated total energy of the three phases, the phase transition order is determined from α to γ phase with cooling, which is in agreement with the experimental result. The physical properties such as elastic constants, bulk modulus, shear modulus, Young’s modulus, Poisson’s ratio, and anisotropy factor are also discussed and analyzed, which indicates that the three structures are mechanically stable and each has a ductile feature. The Debye temperature is deduced from the elastic properties. The total density of states (TDOS) and partial density of states (PDOS) of the three phases are investigated. The TDOS results show that the γ phase is most stable with a pseudogap near the Fermi level, and the PDOS analysis indicates that the conduction band of the three phases is composed mostly of Mg-3s, Ag-4d, and Sb-5p. In addition, the changes of the free energy, entropy, specific heat, thermal expansion of γ-MgAgSb with temperature are obtained successfully. The obtained results above are important parameters for further experimental and theoretical tuning of doped MgAgSb as a thermoelectric material at high temperature. Project supported by the National Natural Science Foundation of China (Grant No. 11504088), the Fund from Henan University of Technology, China (Grant Nos. 2014YWQN08 and 2013JCYJ12), the Natural Science Fund from the Henan Provincial Education Department, China (Grant No. 16A140027), the Natural Science Foundation of Shaanxi Province of China (Grant Nos. 2013JQ1018 and 15JK1759), and the Science Foundation of Northwest University of China (Grant No. 14NW23).

  14. Hyperbolic decay of photo-created Sb2+ ions in Sn2P2S6:Sb crystals detected with electron paramagnetic resonance

    NASA Astrophysics Data System (ADS)

    Basun, S. A.; Halliburton, L. E.; Evans, D. R.

    2017-01-01

    In this paper, we employed a method that overcomes the known limitations of electron paramagnetic resonance (EPR) to monitor charge trap dynamics over a broad temperature range not normally accessible due to the lifetime broadening of the EPR lines at higher temperatures. This was achieved by measuring the decay of the EPR intensity after thermal annealing by rapid cycling back to low temperatures for the EPR measurement. This technique was used to experimentally demonstrate interesting physics in the form of a direct measurement of the hyperbolic decay 1/(1+t) of a charge trap population, which previously was only considered theoretically. The nontrivial effects of bimolecular recombination are demonstrated in the Sn2S2P6:Sb crystals, providing an explanation of the optical sensitization process observed in photorefractive Sn2P2S6:Sb used for dynamic holography.

  15. Effects of the additions of B, P, Sn, and Sb on oxygen assisted hydrogen embrittlement of nickel

    SciTech Connect

    Ogino, Y.; Yamasaki, T.

    1984-03-01

    Effects of additions of B, P, Sn, and Sb on hydrogen embrittlement of nickel were examined on specimens cathodically charged with hydrogen. Tensile specimens were annealed either in vacuum or in a dry hydrogen gas. Undoped, Sn-doped, and Sb-doped materials annealed in vacuum revealed high susceptibility to intergranular hydrogen embrittlement, while the susceptibility was greatly reduced when the materials were annealed in hydrogen. The deleterious effect of vacuum annealing was proposed to result from grain boundary penetration of oxygen from the annealing environment. Additions of a small amount of B and P almost completely suppressed the IGHE of specimens annealed in vacuum. It is suggested that the effect of these elements on grain boundary penetration of oxygen is an important factor for their beneficial effects on IGHE. Addition of Sn somewhat increased the ductility of hydrogen charged specimens annealed both in vacuum and in hydrogen, indicating that this element is not deleterious. Addition of Sb increased the embrittlement susceptibility of specimens annealed in hydrogen. However, the deleterious effect of Sb was not serious in spite of the high concentration of Sb that was examined.

  16. A systematic study of superconductivity in BiPb(Sn)-Sb Sr-Ca-Cu-O systems

    NASA Technical Reports Server (NTRS)

    Akbar, Sheikh A.; Botelho, M. J.; Wong, M. S.; Alauddin, M.

    1990-01-01

    Superconducting transition above 160 K has been reported in the Bi-Pb-Sb-Sr-Ca-Cu-O system. Results of a systematic study emphasizing the correlations between the type and amount of dopant, and superconducting transition is presented. The effect of Sn (instead of Pb) substitution is also highlighted.

  17. Comparison of various organic compounds destruction on rare earths doped Ti/Sb-SnO2 electrodes.

    PubMed

    Cui, Yu-Hong; Feng, Yu-Jie; Liu, Junfeng; Ren, Nanqi

    2012-11-15

    Ti/Sb-SnO2 and three kinds of rare earths (REs), namely Ce, Gd, and Eu doped Ti/Sb-SnO2 electrodes were prepared and tested for their capacity on electrocatalytic degradation of three kinds of basal aromatic compounds (benzoquinone, hydroquinone and catechol) and six kinds of aliphatic acids (maleic acid, fumaric acid, succinic acid, malonic acid, oxalic acid and acetic acid). The elimination of selected organics as well as their TOC removal with different doped Ti/Sb-SnO2 electrodes was described by first-order kinetics. Compared with Ti/Sb-SnO2, the Gd and Eu doped electrodes show better performance on the degradation of most of the selected organics, while Ce doped electrode shows either closely or lower efficiency on the degradation of these selected organics. Besides electrode material, the molecular structure of organic compound has obvious effect on its degradation in the electrocatalytic process. Catechol is more resistant to the electrophilic attack by hydroxyl radicals than benzoquinone and hydroquinone. The compound with more complicate molecular structure or longer carbon chain is more difficult to be mineralized. The aliphatic acid with higher oxygen content or more double bonds is more readily to be oxidized in the electrocatalytic process.

  18. Electronic inhomogeneity and Ag:Sb imbalance of Ag1-yPb18/207Sb1+zTe20 high-performance thermoelectrics elucidated by 125Te and 207Pb NMR

    SciTech Connect

    Levin, E.M.; Cook, B.A.; Ahn, K.; Kanatzidis, M.G.; Schmidt-Rohr, K.

    2009-09-22

    Using magic-angle spinning {sup 125}Te and {sup 207}Pb NMR, we have discovered the presence of two phases of approximately tenfold different free-electron concentration, n, in high-performance thermoelectrics Ag{sub 1?y}Pb{sub 18}Sb{sub 1+z}Te{sub 20} (LAST-18), proven by pairs of Knight-shifted NMR peaks and biexponential spin-lattice relaxation. The ratio of the phases is typically 2:1 with n {approx} 2 x 10{sup 19} cm{sup -3} and 0.2 x 10{sup 19} cm{sup -3}, respectively, determined from the spin-lattice relaxation times. {sup 125}Te NMR spectra show that both phases contain similar concentrations of Sb. The low-n component is assigned to Ag-rich regions with Ag-Sb pairing (but not AgSbTe{sub 2}), the dominant high-n component to PbTe:Sb resulting from the excess of Sb relative to Ag. The electronic inhomogeneity observed here must be considered in the search for a better understanding of high-performance thermoelectric materials.

  19. Improved Workability of the Nanocomposited AgSnO2 Contact Material and Its Microstructure Control During the Arcing Process

    NASA Astrophysics Data System (ADS)

    Wang, Yaping; Li, Haiyan

    2017-02-01

    There are two major weaknesses for the AgSnO2 contacts used in the low voltage switch devices. One is poor workability, which causes the AgSnO2 materials to hardly deform into the required shape. Another is the increased contact resistance after arcing, which, in turn, causes an unfavorable temperature rise in the switches. In this article, the nanocomposited AgSnO2 materials were developed to overcome the weaknesses. The nanosized SnO2 powders with or without CuO additive were prepared by the chemical precipitation method. The SnO2 powders and Ag powders were high energy milled together to obtain AgSnO2 composite powders, which were then sintered, hot pressed and extruded. It was found that the SnO2 particles mainly distribute in the interior of Ag grains with Ag film on the grain boundary. The hardness of AgSnO2 composites and the wetting angle of Ag melt on SnO2 particles decreased with the addition of a small amount of CuO. By the combining effect of Ag film on grain boundary and the addition of CuO, the elongation and workability of the AgSnO2 materials improved. The experiments of rapid solidification revealed that more SnO2 particles with CuO addition were engulfed in the Ag matrix than those without CuO, which inhibited the redistribution of SnO2 particles on the contact surface during the arcing process. The industrial type test in the 45A contactor suggested that the nanocomposited AgSnO2 materials are suitable to be used as contacts in low voltage switches.

  20. The correlation of electrical conductivity with the microstructure of Ge2Sb2Te5 thin films alloyed with Sn

    NASA Astrophysics Data System (ADS)

    Yin, Qixun; Chen, Leng

    2017-01-01

    In this research, the effects of Sn alloying on structure transformation and electrical characteristics of Ge2Sb2Te5 (GST) thin films were studied. It was discovered that the SnTe phase formed in GST thin films when Sn content exceeded 26 at%, and the addition of Sn atoms expanded the lattice parameter, as a result of atomic radii difference between Ge and Sn atoms. Furthermore, temperature dependent sheet resistance measurements on the GST:Sn thin films were performed for the electrical characteristics to be studied. Sn substitution fraction of 16 at% was discovered to maximize the crystallization temperature of GST thin films. Compared to the GST thin films, crystallization temperature difference and lower amorphous resistance of the GST:Sn thin films were mainly due to lower bonding energy of Sn–Te. Moreover, the amorphous conductivity activation energies (E σ) corresponding to different grain sizes were calculated with the Arrhenius equation. The E σ value of GST:Sn thin films decreased significantly as the Sn content increased due to grain size effects, which appears to improve the temperature stability of conductivity of phase change memory.

  1. Interdiffusion analysis of the soldering reactions in Sn-3.5Ag/Cu couples

    NASA Astrophysics Data System (ADS)

    Bae, K. S.; Kim, S. J.

    2001-11-01

    Extensive microstructural and kinetic studies on the formation and growth of the intermetallics of Sn-rich solder/Cu couples have been reported. However, experimental data on the interdiffusion mechanisms during soldering reactions are limited and in conflict. The interdiffusion processes for soldering of Sn-3.5Ag alloy/Cu couples were investigated by using the Cr-evaporated surface as a reference line. At the beginning of soldering, Cu was observed to outdiffuse to the molten Sn-3.5Ag alloy until saturation, and the Sn-Ag solder dissolved with Cu collapsed below the reference line. As a result, the scallop-shaped Cu6Sn5 intermetallic compound was formed at the newly-formed Sn-Ag-Cu solder/Cu interface below the original Cu surface. When the soldered joint was reflowed at the lower temperature to suppress the Cu dissolution, the Cu6Sn5/Cu interface moved into the Cu substrate. Therefore, Sn is the dominant diffusing species for the intermetallic formation during the soldering process, although the extensive Cu dissolution occurs at the early stage of soldering.

  2. Thickness-Induced Metal-Insulator Transition in Sb-doped SnO2 Ultrathin Films: The Role of Quantum Confinement

    PubMed Central

    Ke, Chang; Zhu, Weiguang; Zhang, Zheng; Soon Tok, Eng; Ling, Bo; Pan, Jisheng

    2015-01-01

    A thickness induced metal-insulator transition (MIT) was firstly observed in Sb-doped SnO2 (SnO2:Sb) epitaxial ultrathin films deposited on sapphire substrates by pulsed laser deposition. Both electrical and spectroscopic studies provide clear evidence of a critical thickness for the metallic conductivity in SnO2:Sb thin films and the oxidation state transition of the impurity element Sb. With the shrinkage of film thickness, the broadening of the energy band gap as well as the enhancement of the impurity activation energy was studied and attributed to the quantum confinement effect. Based on the scenario of impurity level pinning and band gap broadening in quantum confined nanostructures, we proposed a generalized energy diagram to understand the thickness induced MIT in the SnO2:Sb system. PMID:26616286

  3. Electromigration of composite Sn-Ag-Cu solder bumps

    NASA Astrophysics Data System (ADS)

    Sharma, Ashutosh; Xu, Di Erick; Chow, Jasper; Mayer, Michael; Sohn, Heung-Rak; Jung, Jae Pil

    2015-11-01

    This study investigates the electromigration (EM) behavior of lead free Sn-Ag-Cu (SAC) solder alloys that were reinforced with different types of nanoparticles [Copper-coated carbon nanotubes (Cu/CNT), La2O3, Graphene, SiC, and ZrO2]. The composite solders were bumped on a Cu substrate at 220°C, and the resistance of the bumped solders was measured using a four wire setup. Current aging was carried out for 4 hours at a temperature of 160°C, and an increase in resistance was noted during this time. Of all the composite solders that were studied, La2O3 and SiC reinforced SAC solders exhibited the smallest resistances after current aging. However, the rate of change in the resistance at room temperature was lower for the SiC-reinforced SAC solder. The SAC and Graphene reinforced SAC solder bumps completely failed within 15 - 20 min of these tests. The SiC nanoparticles were reported to possibly entrap the SAC atoms better than other nanoparticles with a lower rate of EM. [Figure not available: see fulltext.

  4. Infrared Polarizer Fabrication by Imprinting on Sb-Ge-Sn-S Chalcogenide Glass

    NASA Astrophysics Data System (ADS)

    Yamada, Itsunari; Yamashita, Naoto; Tani, Kunihiko; Einishi, Toshihiko; Saito, Mitsunori; Fukumi, Kouhei; Nishii, Junji

    2012-01-01

    We fabricated infrared wire-grid polarizers consisting of a 500-nm pitch Al grating on a low toxic chalcogenide glass (Sb-Ge-Sn-S system) using the direct imprinting of subwavelength grating followed by a deposition of Al metal by thermal evaporation. To fabricate the subwavelength grating on a chalcogenide glass more easily, the sharp grating was formed on the mold surface. The fabricated polarizer with Al thickness of 130 nm exhibited a polarization function with a transverse magnetic transmittance greater than 60% in the 5-9 µm wavelength range, and an extinction ratio greater than 20 dB in 3.5-11 µm wavelength range. The extinction ratio of the element with Al wires of 180-nm thickness reached 27 dB at 5.4-µm wavelength. The polarizer can be fabricated at lower costs and simpler fabrication processes compared to conventional infrared polarizers.

  5. Metal to insulator transition in Sb doped SnO2 monocrystalline nanowires thin films

    NASA Astrophysics Data System (ADS)

    Costa, I. M.; Bernardo, E. P.; Marangoni, B. S.; Leite, E. R.; Chiquito, A. J.

    2016-12-01

    We report on the growth and transport properties of single crystalline Sb doped SnO2 wires grown from chemical vapour deposition. While undoped samples presented semiconducting behaviour, doped ones clearly undergo a transition from an insulating state ( d R /d T <0 ) to a metallic one ( d R /d T >0 ) around 130 -150 K depending on the doping level. Data analysis in the framework of the metal-to-insulator transition theories allowed us to investigate the underlying physics: electron-electron and electron-phonon interactions were identified as the scattering mechanisms present in the metallic phase, while the conduction mechanism of the semiconducting phase (undoped sample) was characterized by thermal activation and variable range hopping mechanisms.

  6. Ultra-fast dry microwave preparation of SnSb used as negative electrode material for Li-ion batteries

    NASA Astrophysics Data System (ADS)

    Antitomaso, P.; Fraisse, B.; Sougrati, M. T.; Morato-Lallemand, F.; Biscaglia, S.; Aymé-Perrot, D.; Girard, P.; Monconduit, L.

    2016-09-01

    Tin antimonide alloy was obtained for the first time using a very simple dry microwave route. Up to 1 g of well crystallized SnSb can be easily prepared in 90 s under air in an open crucible. A full characterization by X-ray diffraction and 119Sn Mössbauer spectroscopy demonstrated the benefit of carbon as susceptor, which avoid any oxide contamination. The microwave-prepared SnSb was tested as negative electrode material in Li batteries. Interesting results in terms of capacity and rate capability were obtained with up to 700 mAh/g sustained after 50 cycles at variable current. These results pave the way for the introduction of microwave synthesis as realistic route for a rapid, low cost and up-scalable production of electrode material for Li batteries or other large scale application types.

  7. High temperature neutron powder diffraction study of the Cu12Sb4S13 and Cu4Sn7S16 phases

    NASA Astrophysics Data System (ADS)

    Lemoine, Pierric; Bourgès, Cédric; Barbier, Tristan; Nassif, Vivian; Cordier, Stéphane; Guilmeau, Emmanuel

    2017-03-01

    Ternary copper-containing sulfides Cu12Sb4S13 and Cu4Sn7S16 have attracted considerable interest since few years due to their high-efficiency conversion as absorbers for solar energy and promising thermoelectric materials. We report therein on the decomposition study of Cu12Sb4S13 and Cu4Sn7S16 phases using high temperature in situ neutron powder diffraction. Our results obtained at a heating rate of 2.5 K/min indicate that: (i) Cu12Sb4S13 decomposes above ≈792 K into Cu3SbS3, and (ii) Cu4Sn7S16 decomposes above ≈891 K into Sn2S3 and a copper-rich sulfide phase of sphalerite ZnS-type structure with an assumed Cu3SnS4 stoichiometry. Both phase decompositions are associated to a sulfur volatilization. While the results on Cu12Sb4S13 are in fair agreement with recent published data, the decomposition behavior of Cu4Sn7S16 differs from other studies in terms of decomposition temperature, thermal stability and products of reaction. Finally, the crystal structure refinements from neutron powder diffraction data are reported and discussed for the Cu4Sn7S16 and tetrahedrite Cu12Sb4S13 phases at 300 K, and for the high temperature form of skinnerite Cu3SbS3 at 843 K.

  8. Shift of the reactive species in the Sb-SnO2-electrocatalyzed inactivation of e. coli and degradation of phenol: effects of nickel doping and electrolytes.

    PubMed

    Yang, So Young; Kim, Dongseog; Park, Hyunwoong

    2014-01-01

    The electrocatalytic behavior and anodic performance of Sb-SnO2 and nickel-doped Sb-SnO2 (Ni-Sb-SnO2) in sodium sulfate and sodium chloride electrolytes were compared. Nickel-doping increased the service lifetime by a factor of 9 and decreased the charge transfer resistance of the Sb-SnO2 electrodes by 65%. More importantly, Ni doping improved the electrocatalytic performance of Sb-SnO2 for the remediation of aqueous phenol and the inactivation of E. coli by a factor of more than 600% and ∼20%, respectively. In the sulfate electrolyte, the primary reactive oxygen species (ROS) identified were OH radicals (Faradaic efficiency η = 2.4%) with trace levels of ozone and hydrogen peroxide (η < 0.01%) at Sb-SnO2. In contrast, the primary ROS at Ni-Sb-SnO2 was ozone (η = 9.3%) followed by OH radicals (η = 3.7%). In the chloride electrolyte, the production of hypochlorite (OCl(-)) was higher (η = 0.73%) than that of ozone (η = 0.13%) at Sb-SnO2, whereas the level of ozone (η = 13.6%) was much higher than that of hypochlorite (η = 0.24%) at Ni-Sb-SnO2. Based on the shift of the reactive species, the primary effect of Ni doping is to catalyze the six-electron oxidation of water to ozone and inhibit the competing one or two-electron oxidation of water (generation of OH radicals, hydrogen peroxides, and hypochlorites). A range of electrochemical and surface analyses were performed, and a detailed mechanism was proposed.

  9. Observation of amorphous to crystalline phase transformation in Te substituted Sn-Sb-Se thin films

    SciTech Connect

    Chander, Ravi

    2015-05-15

    Thin films of Sn-Sb-Se-Te (8 ≤ x ≤ 14) chalcogenide system were prepared by thermal evaporation technique using melt quenched bulk samples. The as-prepared thin films were found amorphous as evidenced from X-ray diffraction studies. Resistivity measurement showed an exponential decrease with temperature upto critical temperature (transition temperature) beyond which a sharp decrease was observed and with further increase in temperature showed an exponential decrease in resistivity with different activation energy. The transition temperature showed a decreasing trend with tellurium content in the sample. The resistivity measurement during cooling run showed no abrupt change in resistivity. The resistivity measurements of annealed films did not show any abrupt change revealing the structural transformation occurring in the material. The transition width showed an increase with tellurium content in the sample. The resistivity ratio showed two order of magnitude improvements for sample with higher tellurium content. The observed transition temperature in this system was found quite less than already commercialized Ge-Sb-Te system for optical and electronic memories.

  10. Deposition of controlled thickness ultrathin SnO2:Sb films by spin-coating.

    PubMed

    Giraldi, Tania R; Ribeiro, Cauê; Escote, Marcia T; Conti, Tiago G; Chiquito, Adenilson J; Leite, Edson R; Longo, Elson; Varela, José A

    2006-12-01

    The technological interest in transparent conductive oxide films (TCOs) has motivated several works in processing techniques, in order to obtain adequate routes to application. In this way, this work describes a new route to obtain antimony-doped tin oxide (ATO) films, based in colloidal dispersions of oxide nanocrystals. The nanoparticles were obtained by a hydrolisis method, using SnCl2 and SbCl3 in ethanolic solutions. The residual halides were removed by dyalisis, obtaining a limpid and transparent colloidal suspension. By this, the method offers the advantage of producing ultrathin films without organic contaminants. This route was employed to produce films with 5, 10, 14, and 18 mol% Sb doping, with thickness ranging from 40 to 70 nm. The physical characterization of the samples showed a uniform layer deposition, resulting in good packing density and high transmittance. A preliminar electrical study confirmed the low electrical resistivity even in the ultrathin films, in such level similar of reported data. The method described is similar in some aspects to layer-by-layer (LbL) techniques, allowing fine control of thickness and interesting properties for ultrathin films, however, with low cost when compared to similar routes.

  11. Replacement of Ge in GeTe by [Ag +Sb] and rare earths: effect on thermoelectric properties

    NASA Astrophysics Data System (ADS)

    Levin, E. M.; Hanson, M.; Hanus, R.; Schmidt-Rohr, K.

    2013-03-01

    High-efficiency p-type Te-Sb-Ge-Ag (TAGS) thermoelectric materials are based on the GeTe narrow-band self-dopant semiconductor where Ge can be replaced by up to 16 at.% [Ag +Sb]. To understand the effect of Ge replacement by 4 at.% [Ag +Sb] as well as rare earths atoms, we have synthesized and studied XRD, thermopower, electrical resistivity, thermal conductivity, and 125Te NMR of GeTe and Ag2Sb2Ge46-xRxTe50 with R =Gd, Dy and x = 1, 2. At 700 K, GeTe exhibits a thermopower of +146 μVK-1 and a large power factor, 42 μWcm-1K-2. Replacement of Ge by [Ag +Sb] and rare earths enhances the thermopower, but slightly reduces the power factor due to an increase in electrical resistivity. The thermal conductivity at 300 K of all alloys studied is reduced by a factor of two compared to GeTe. 125Te NMR spin-lattice relaxation time and resonance frequency reflect changes in carrier concentration. However, decrease of thermal conductivity due to carriers and increase of electrical resistivity are mostly due to a reduction of carrier mobility and indicate strong scattering produced by [Ag +Sb] and rare earth atoms. At 700 K, the thermoelectric figure of merit of GeTe is 0.8, whereas that in Ag2Sb2Ge45Dy1Te50 is much larger, 1.2, due to a reduction in thermal conductivity. Enhancement of thermopower is discussed within a model of energy filtering.

  12. Optical properties of amorphous and crystalline Sb-doped SnO2 thin films studied with spectroscopic ellipsometry: Optical gap energy and effective mass

    NASA Astrophysics Data System (ADS)

    So, Hyeon Seob; Park, Jun-Woo; Jung, Dae Ho; Ko, Kun Hee; Lee, Hosun

    2015-08-01

    We investigated the optical properties of amorphous and crystalline antimony (Sb)-doped tin dioxide (SnO2) thin films grown using the co-sputtering deposition method at room temperature. We used undoped and Sb-doped (8 wt. %) SnO2 targets. Varying the relative power ratio of the two targets, we controlled the Sb-composition of the SnO2:Sb thin films up to 2.3 at. % of Sb contents. Through annealing, the as-grown amorphous SnO2:Sb thin films were transformed to crystalline thin films. Dielectric functions were obtained from the measured ellipsometry angles, Ψ and Δ, using the Drude and parametric optical constant models. We determined the absorption coefficients and optical gap energies of the SnO2:Sb thin films from the dielectric functions. We found increasing optical gap energy with increasing Sb composition. Increases in the Drude tail amplitudes, a signature of free carrier concentrations, were found in annealed, crystalline thin films with increasing Sb composition. The increase in the optical gap energy with increasing Sb composition was mainly attributed to the Burstein-Moss effect. Using Hall effect measurements, we obtained Hall carrier concentrations (NHall) and electron Hall mobilities (μHall). The carrier concentrations and mobilities increased from 2.6 × 1019 cm-3 and 1.0 cm2/(V s) to 2.0 × 1020 cm-1 and 7.2 cm2/(V s), respectively, with increasing Sb contents. This result suggests that the nominally undoped SnO2 films are unintentionally n-type doped. Assuming that the NHall and optical carrier concentrations (Nopt) were the same, we obtained the effective masses of the SnO2:Sb thin films with increasing Sb compositions. The effective masses of the SnO2:Sb thin films increased from 0.245 m0 to 0.4 m0 with increasing Sb doping contents, and the nonparabolicity of the conduction band was estimated. We discussed the relation between the optical (μopt) and Hall (μHall) mobilities as a function of Sb contents and grain sizes.

  13. Optical properties of amorphous and crystalline Sb-doped SnO{sub 2} thin films studied with spectroscopic ellipsometry: Optical gap energy and effective mass

    SciTech Connect

    So, Hyeon Seob; Park, Jun-Woo; Jung, Dae Ho; Ko, Kun Hee; Lee, Hosun

    2015-08-28

    We investigated the optical properties of amorphous and crystalline antimony (Sb)-doped tin dioxide (SnO{sub 2}) thin films grown using the co-sputtering deposition method at room temperature. We used undoped and Sb-doped (8 wt. %) SnO{sub 2} targets. Varying the relative power ratio of the two targets, we controlled the Sb-composition of the SnO{sub 2}:Sb thin films up to 2.3 at. % of Sb contents. Through annealing, the as-grown amorphous SnO{sub 2}:Sb thin films were transformed to crystalline thin films. Dielectric functions were obtained from the measured ellipsometry angles, Ψ and Δ, using the Drude and parametric optical constant models. We determined the absorption coefficients and optical gap energies of the SnO{sub 2}:Sb thin films from the dielectric functions. We found increasing optical gap energy with increasing Sb composition. Increases in the Drude tail amplitudes, a signature of free carrier concentrations, were found in annealed, crystalline thin films with increasing Sb composition. The increase in the optical gap energy with increasing Sb composition was mainly attributed to the Burstein-Moss effect. Using Hall effect measurements, we obtained Hall carrier concentrations (N{sub Hall}) and electron Hall mobilities (μ{sub Hall}). The carrier concentrations and mobilities increased from 2.6 × 10{sup 19 }cm{sup −3} and 1.0 cm{sup 2}/(V s) to 2.0 × 10{sup 20 }cm{sup −1} and 7.2 cm{sup 2}/(V s), respectively, with increasing Sb contents. This result suggests that the nominally undoped SnO{sub 2} films are unintentionally n-type doped. Assuming that the N{sub Hall} and optical carrier concentrations (N{sub opt}) were the same, we obtained the effective masses of the SnO{sub 2}:Sb thin films with increasing Sb compositions. The effective masses of the SnO{sub 2}:Sb thin films increased from 0.245 m{sub 0} to 0.4 m{sub 0} with increasing Sb doping contents, and the nonparabolicity of the conduction band was estimated. We

  14. Study of structural changes and properties of some Sn-Ag lead-free solder alloys

    NASA Astrophysics Data System (ADS)

    Kamal, M.; Said Gouda, El

    2007-11-01

    Structure, wetting, mechanical and electrical transport properties of tin- (2.5, 3.5, 5 and 10) wt.% silver alloys have been investigated. The results showed that, addition of silver to pure tin causes more precipitations of the intermetallic compound Ag{3}Sn. A new intermetallic compound Ag{4}Sn has been formed with adding Ag more than 3.5 wt.%. This compound causes continuous increase in the Young's modulus and electrical resistivity. While for the wetting measurements, additions of silver to pure tin up to 5 wt.% reduces the contact angle. Above that, the contact angle increases due to more precipitations of Ag Sn compounds, which may tend to reduce the adhesive forces between molten alloys and the substrate.

  15. Low Temperature Solution-Processed Sb:SnO2 Nanocrystals for Efficient Planar Perovskite Solar Cells.

    PubMed

    Bai, Yang; Fang, Yanjun; Deng, Yehao; Wang, Qi; Zhao, Jingjing; Zheng, Xiaopeng; Zhang, Yang; Huang, Jinsong

    2016-09-22

    Inorganic metal oxide electron-transport layers (ETLs) have the potential to yield perovskite solar cells with improved stability, but generally need high temperature to form conductive and defect-less forms, which is not compatible with the fabrication of flexible and tandem solar cells. Here, we demonstrate a facile strategy for developing efficient inorganic ETLs by doping SnO2 nanocrystals (NCs) with a small amount of Sb using a low-temperature solution-processed method. The electrical conductivity was remarkably enhanced by Sb-doping, which increased the carrier concentration in Sb:SnO2 NCs. Moreover, the upward shift of the Fermi level owing to doping results in improved energy level alignment, which led to reduced charge recombination, and thus longer electron recombination lifetime and improved open-circuit voltage (VOC ). Therefore, Sb-doping of SnO2 significantly enhanced the photovoltaic performance of planar perovskite devices by increasing the fill factor and VOC , and reducing photocurrent hysteresis, extending the potential application of low-temperature-processed ETLs in future flexible and tandem solar cells.

  16. Decay of photo-induced conductivity in Sb-doped SnO2 thin films, using monochromatic light of about bandgap energy

    NASA Astrophysics Data System (ADS)

    Floriano, E. A.; Scalvi, L. V. A.; Sambrano, J. R.; de Andrade, A.

    2013-02-01

    Doping tin dioxide (SnO2) with pentavalent Sb5+ ions leads to an enhancement in the electrical conductivity of this material, because Sb5+ substitutes Sn4+ in the matrix, promoting an electronic density increase in the conduction band, due to the donor-like nature of the doping atom. Results of computational simulation, based on the Density Functional Theory (DFT), of SnO2:4%Sb and SnO2:8%Sb show that the bandgap magnitude is strongly affected by the doping concentration, because the energy value found for 4 at%Sb and 8 at%Sb was 3.27 eV and 3.13 eV, respectively, whereas the well known value for undoped SnO2 is about 3.6 eV. Sb-doped SnO2 thin films were obtained by the sol-gel-dip-coating technique. The samples were submitted to excitation with below theoretical bandgap light (450 nm), as well as above bandgap light (266 nm) at low temperature, and a temperature-dependent increase in the conductivity is observed. Besides, an unusual temperature and time dependent decay when the illumination is removed is also observed, where the decay time is slower for higher temperatures. This decay is modeled by considering thermally activated cross section of trapping centers, and the hypothesis of grain boundary scattering as the dominant mechanism for electronic mobility.

  17. Calculated magneto-optical Kerr spectra of the half-Heusler compounds AuMnX (X = In, Sn, Sb).

    PubMed

    Amft, M; Oppeneer, P M

    2007-08-08

    The ferromagnetic ground states of the half-Heusler compounds AuMnX (X = In, Sn, Sb) have been calculated in the framework of the local spin-density approximation (LSDA) to density functional theory (DFT). AuMnSn is computed to be a half-metallic ferromagnet, whereas AuMnIn and AuMnSb are not half-metallic, due to their different band filling. The computed relativistic electronic structures served as inputs to calculate the magneto-optical Kerr rotations and ellipticities for all three materials. In the case of AuMnSn the largest, zero-temperature, polar Kerr rotation has been found to be -0.45° at about 1 eV photon energy. The computed MOKE spectra of AuMnSn are in qualitative agreement with recent experiments. The largest Kerr rotations of AuMnIn and AuMnSb have been calculated to be +0.64° at 4.3 eV and -0.85° at 0.9 eV, respectively.

  18. Ag/Ni Metallization Bilayer: A Functional Layer for Highly Efficient Polycrystalline SnSe Thermoelectric Modules

    NASA Astrophysics Data System (ADS)

    Park, Sang Hyun; Jin, Younghwan; Ahn, Kyunghan; Chung, In; Yoo, Chung-Yul

    2017-02-01

    The structural and electrical characteristics of Ag/Ni bilayer metallization on polycrystalline thermoelectric SnSe were investigated. Two difficulties with thermoelectric SnSe metallization were identified for Ag and Ni single layers: Sn diffusion into the Ag metallization layer and unexpected cracks in the Ni metallization layer. The proposed Ag/Ni bilayer was prepared by hot-pressing, demonstrating successful metallization on the SnSe surface without interfacial cracks or elemental penetration into the metallization layer. Structural analysis revealed that the Ni layer reacts with SnSe, forming several crystalline phases during metallization that are beneficial for reducing contact resistance. Detailed investigation of the Ni/SnSe interface layer confirms columnar Ni-Sn intermetallic phases [(Ni3Sn and Ni3Sn2) and Ni5.63SnSe2] that suppress Sn diffusion into the Ag layer. Electrical specific-contact resistivity (5.32 × 10-4 Ω cm2) of the Ag/Ni bilayer requires further modification for development of high-efficiency polycrystalline SnSe thermoelectric modules.

  19. Order, miscibility, and electronic structure of Ag(Bi,Sb)Te2 alloys and (Ag,Bi,Sb)Te precipitates in rocksalt matrix. A first-principles study

    SciTech Connect

    Barabash, V.; Ozolins, Vidvuds

    2010-02-23

    Using first-principles density-functional theory calculations and cluster expansion, we predict that AgBiTe2 -AgSbTe2 alloys exhibit D4 cation order at all temperatures below melting and are fully miscible down to the room temperature and below. We also discuss the miscibility and ordering on the cation sublattice in quasiternary (Ag,Bi,Sb)Te alloys with general composition, within the subclass of structures with rocksalt topology (relevant for the case of coherent precipitates in a rocksalt matrix, e.g., in PbTe). The band structures of the AgBiTe2 and AgSbTe2 compounds and the evolution of the Fermi-surface topology at low hole dopings are presented. We use these results to refine the interpretation of the recent experimental measurements on naturally doped AgSbTe2 samples reported by Jovovic and Heremans [Phys. Rev. B 77, 245204 (2008)] and present a simplified model of the band dispersion near the valence-band maximum.

  20. Cu6Sn5 Morphology Transition and Its Effect on Mechanical Properties of Eutectic Sn-Ag Solder Joints

    NASA Astrophysics Data System (ADS)

    Yang, Ming; Li, Mingyu; Wang, Ling; Fu, Yonggao; Kim, Jongmyung; Weng, Lvqian

    2011-02-01

    The morphologies of Cu6Sn5 grains formed at the interface between Sn-3.5Ag (wt.% unless otherwise specified) and Cu substrates were studied in this work. Reflow experiments were performed for 60 s at peak temperatures of 513 K, 533 K, 543 K, and 553 K. Two morphologies of interfacial Cu6Sn5 grains were observed in wetting reactions: prism type, above 543 K, and scallop type, below 533 K. During aging, the two morphologies gradually transitioned to layer type. These three morphologies could be transformed into each other as long as the corresponding condition changed. The morphology transition of Cu6Sn5 in the wetting reaction was explained by the change in Jackson's parameter with temperature. In addition, the effect of the Cu content in molten solder on interfacial Cu6Sn5 grains was examined. Significant differences in shear strength were observed for solder joints with different interfacial Cu6Sn5 morphologies in the case of a lower shear height. Joint strength is discussed in terms of the microstructure of the solder matrix and the morphology of interfacial Cu6Sn5 grains.

  1. One-pot chemical route for morphology-controllable fabrication of Sn-Sb micro/nano-structures: Advanced anode materials for lithium and sodium storage

    NASA Astrophysics Data System (ADS)

    Yi, Zheng; Han, Qigang; Geng, Di; Wu, Yaoming; Cheng, Yong; Wang, Limin

    2017-02-01

    A series of morphology/component-controllable Sn-Sb micro/nano-structures are fabricated by a one-pot replacement reaction technique employing metallic Sn as both template and reducing agent. Typically, nanoscaled Sn as template and ethyl alcohol as solvent give the hollow structure, while micron-sized Sn as precursor and ethylene glycol as solvent produce the dendritic product. Other mixed structures are also obtained by this one-pot route. As anode materials for lithium-ion batteries, the hollow or dendritic Sn-Sb materials exhibit higher discharge capacities compared with the corresponding Sb samples as well as the Sn templates. Especially, for the Sn-Sb hollow spheres, a high discharge capacity of 820.7 mAh g-1 after first cycle and a reversible capacity of 751 mAh g-1 are achieved after 100 cycles at a current density of 100 mA g-1. Meanwhile, the hollow Sn-Sb structure delivers a specific capacity of 451.3 mA h g-1 at 500 mA g-1 after 150 cycles when used for sodium ion batteries. The superior electrochemical performance that are higher than many reported results can be attributed to the special morphology and structure, which can shorten the transportation distance of lithium/sodium ion and provide extra free space to buffer the volume expansion during the lithium/sodium insertion/extraction.

  2. Interfacial microstructure between Sn-3Ag-xBi alloy and Cu substrate with or without electrolytic Ni plating

    NASA Astrophysics Data System (ADS)

    Hwang, Chi-Won; Lee, Jung-Goo; Suganuma, Katsuaki; Mori, Hirotaro

    2003-02-01

    The microstructure of the interfacial phase of Sn-3Ag-xBi alloy on a Cu substrate with or without electrolytic Ni plating was evaluated. Bismuth additions into Sn-Ag alloys do not affect interfacial phase formations. Without plating, η-Cu6Sn5/ɛ-Cu3Sn interfacial phases developed as reaction products in the as-soldered condition. The η-phase Cu6Sn5 with a hexagonal close-packed structure grows about 1-µm scallops. The ɛ-phase Cu3Sn with an orthorhombic structure forms with small 100-nm grains between η-Cu6Sn5 and Cu. For Ni plating, a Ni3Sn4 layer of monoclinic structure formed as the primary reaction product, and a thin η-Ni3Sn2 layer of hexagonal close-packed structure forms between the Ni3Sn4 and Ni layer. In the Ni layer, Ni-Sn compound particles of nanosize distribute by Sn diffusion into Ni. On the total thickness of interfacial reaction layers, Sn-3Ag-6Bi joints are thicker by about 0.9 µm for the joint without Ni plating and 0.18 µm for the joint with Ni plating than Sn-3Ag joints, respectively. The thickening of interfacial reaction layers can affect the mechanical properties of strength and fatigue resistance.

  3. Structural and optical studies on AgSbSe{sub 2} thin films

    SciTech Connect

    Asokan, T. Namitha; Urmila, K. S.; Pradeep, B.

    2014-01-28

    AgSbSe{sub 2} semiconducting thin films are successfully deposited using reactive evaporation technique at a substrate temperature of 398K. X-ray diffraction studies reveal that the films are polycrystalline in nature. The structural parameters such as average particle size, dislocation density, and number of crystallites per unit have been evaluated. Atomic Force Microscopy is used to study the topographic characteristics of the film including the grain size and surface roughness. The silver antimony selenide thin films have high absorption coefficient of about 10{sup 5} cm{sup −1} and it has an indirect band gap of 0.64eV.

  4. Observation of Dirac-like band dispersion in LaAgSb2

    DOE PAGES

    Shi, X.; Richard, P.; Wang, Kefeng; ...

    2016-02-16

    In this paper, we present a combined angle-resolved photoemission spectroscopy (ARPES) and first-principles calculations study of the electronic structure of LaAgSb2 in the entire first Brillouin zone. We observe a Dirac-cone-like structure in the vicinity of the Fermi level formed by the crossing of two linear energy bands, as well as the nested segments of a Fermi surface pocket emerging from the cone. In conclusion, our ARPES results show the close relationship of the Dirac cone to the charge-density-wave ordering, providing consistent explanations for exotic behaviors in this material.

  5. Enhanced photoelectrochemical water splitting efficiency of a hematite-ordered Sb:SnO2 host-guest system.

    PubMed

    Wang, Lei; Palacios-Padrós, Anna; Kirchgeorg, Robin; Tighineanu, Alexei; Schmuki, Patrik

    2014-02-01

    Host-guest systems such as hematite/SnO2 have attracted a great deal of interest as photoanodes for photoelectrochemical water splitting. In the present work we form an ordered porous tin oxide layer formed by self-organizing anodization of Sn films on a FTO substrate. Subsequently the anodic tin oxide nanostructure is doped with antimony (ATO) by a simple impregnation and annealing treatment, and then decorated with hematite using anodic deposition. Photoelectrochemical water splitting experiments show that compared to conventional SnO2 nanostructures, using a Sb doped nanochannel SnO2 as a host leads to a drastic increase of the water splitting photocurrent response up to 1.5 mA cm(-2) at 1.6 V (vs. RHE) in 1 M KOH under AM 1.5 (100 mW cm(-2) ) conditions compared to 0.04 mA cm(-2) for the non-Sb doped SnO2 scaffold.

  6. Electromigration effect upon the Sn-0.7 wt% Cu/Ni and Sn-3.5 wt% Ag/Ni interfacial reactions

    NASA Astrophysics Data System (ADS)

    Chen, Chih-ming; Chen, Sinn-wen

    2001-08-01

    This study investigates the effect of electromigration upon the interfacial reactions between the promising lead-free solders, Sn-Cu and Sn-Ag, with Ni substrate. Sandwich-type reaction couples, Sn-0.7 wt% Cu/Ni/Sn-0.7 wt% Cu and Sn-3.5 wt% Ag/Ni/Sn-3.5 wt% Ag, were reacted at 160, 180, and 200 °C for various lengths of time with and without the passage of electric currents. Without passage of electric currents through the couples, only one intermetallic compound Ni3Sn4 with ˜7 at. % Cu solubility was found at both interfaces of the Sn-0.7 wt% Cu/Ni couples. With the passage of an electric current of 500 A/cm2 density, the Cu6Sn5 phase was formed at the solder/Ni interface besides the Ni3Sn4 phase. Similar to those without the passage of electric currents, only the Ni3Sn4 phase was found at the Ni/solder interface. Directions of movement of electrons, Sn, and Cu atoms are the same at the solder/Ni interface, and the growth rates of the intermetallic layers were enhanced. At the Ni/solder interface, the electrons flow in the opposite direction of the Sn and Cu movement, and the growth rates of the intermetallic layers were retarded. Only the Ni3Sn4 phase was formed from the Sn-3.5 wt% Ag/Ni interfacial reaction with and without the passage of electric currents. Similar to the Sn-0.7 wt% Cu/Ni system, the movement of electrons enhances or retards the growth rates of the intermetallic layers at the solder/Ni and Ni/solder interfaces, respectively. Calculation results show the apparent effective charge za* decreases in magnitude with raising temperatures, which indicates the electromigration effect becomes insignificant at higher temperatures.

  7. Comparative modular analysis of two complex sulfosalt structures: sterryite, Cu(Ag,Cu)3Pb19(Sb,As)22(As-As)S56, and parasterryite, Ag4Pb20(Sb,As)24S58.

    PubMed

    Moëlo, Yves; Guillot-Deudon, Catherine; Evain, Michel; Orlandi, Paolo; Biagioni, Cristian

    2012-10-01

    The crystal structures of two very close, but distinct complex minerals of the lead sulfosalt group have been solved: sterryite, Cu(Ag,Cu)(3)Pb(19)(Sb,As)(22)(As-As)S(56), and parasterryite, Ag(4)Pb(20)(Sb,As)(24)S(58). They are analyzed and compared according to modular analysis. The fundamental building block is a complex column centred on a Pb(6)S(12) triangular prismatic core, with two additional long and short arms. The main chemical and topological differences relate to the short arm, which induces a relative a/4 shift (~2 Å along the elongation parameter) of the constitutive rod layers, as illustrated by distinct cell settings within the same space group (P2(1)/n and P2(1)/c, respectively). Selection of the shortest (i.e. strongest) (Sb,As)-S bonds permitted to enhance the polymeric organization of (Sb,As) atoms with triangular pyramidal coordination. These two quasi-homeotypic structures are expanded derivatives of owyheeite, Ag(3)Pb(10)Sb(11)S(28). The hierarchy of organization levels from zero- to three-dimensional entities is subordinated to building operators, which appear as the driving force for the construction of such complex structures. Minor cations (Ag, Cu) or the As-As pair in sterryite secure the final locking, which favours the formation of one or the other compound.

  8. Synthesis of Ag2O and Ag co-modified flower-like SnS2 composites with enhanced photocatalytic activity under solar light irradiation

    NASA Astrophysics Data System (ADS)

    Deng, Lu; Zhu, Zhenfeng; Liu, Liu; Liu, Hui

    2017-01-01

    Three-dimensional Ag2O and Ag co-modified flower-like SnS2 composites have been synthesized through a facile hydrothermal and photoreduction process. The physical and chemical properties of Ag2O and Ag co-modified flower-like SnS2 composites were carefully studied by using XRD, SEM, TEM, UV-vis diffuse reflectance spectra (DRS) and XPS. The photocatalytic activity of the as-prepared products was evaluated by photocatalytic decolorization of Rhodamine B (Rh B) aqueous solution at ambient temperature under solar light irradiation. The photocatalytic result shows that Ag2O and Ag co-modified flower-like SnS2 composites exhibit enhanced photocatalytic activity compared with that of pure SnS2. Three of the Ag2O and Ag co-modified flower-like SnS2 composites form the Z-scheme systems, because of their unique charge-carrier transfer process, the oxidation/reduction ability of photogenerated holes and electrons could be enhanced. Therefore, the new Ag2O and Ag co-modified flower-like SnS2 composites possess a favorable photocatalytic activity, and it can be a promising candidate for the solar energy conversion process.

  9. The effect of intermetallic compound morphology on Cu diffusion in Sn-Ag and Sn-Pb solder bump on the Ni/Cu Under-bump metallization

    NASA Astrophysics Data System (ADS)

    Jang, Guh-Yaw; Duh, Jenq-Gong

    2005-01-01

    The eutectic Sn-Ag solder alloy is one of the candidates for the Pb-free solder, and Sn-Pb solder alloys are still widely used in today’s electronic packages. In this tudy, the interfacial reaction in the eutectic Sn-Ag and Sn-Pb solder joints was investigated with an assembly of a solder/Ni/Cu/Ti/Si3N4/Si multilayer structures. In the Sn-3.5Ag solder joints reflowed at 260°C, only the (Ni1-x,Cux)3Sn4 intermetallic compound (IMC) formed at the solder/Ni interface. For the Sn-37Pb solder reflowed at 225°C for one to ten cycles, only the (Ni1-x,Cux)3Sn4 IMC formed between the solder and the Ni/Cu under-bump metallization (UBM). Nevertheless, the (Cu1-y,Niy)6Sn5 IMC was observed in joints reflowed at 245°C after five cycles and at 265°C after three cycles. With the aid of microstructure evolution, quantitative analysis, and elemental distribution between the solder and Ni/Cu UBM, it was revealed that Cu content in the solder near the solder/IMC interface played an important role in the formation of the (Cu1-y,Niy)6Sn5 IMC. In addition, the diffusion behavior of Cu in eutectic Sn-Ag and Sn-Pb solders with the Ni/Cu UBM were probed and discussed. The atomic flux of Cu diffused through Ni was evaluated by detailed quantitative analysis in an electron probe microanalyzer (EPMA). During reflow, the atomic flux of Cu was on the order of 1016-1017 atoms/cm2sec in both the eutectic Sn-Ag and Sn-Pb systems.

  10. Electrical properties of Sb-doped epitaxial SnO2 thin films prepared using excimer-laser-assisted metal-organic deposition

    NASA Astrophysics Data System (ADS)

    Tsuchiya, Tetsuo; Nakajima, Tomohiko; Shinoda, Kentaro

    2013-12-01

    Excimer-laser-assisted metal-organic deposition (ELAMOD) was used to prepare Sb-doped epitaxial (001) SnO2 thin films on (001) TiO2 substrates at room temperature. The effects of laser fluence, the number of shots with the laser, and Sb content on the electrical properties such as resistivity, carrier concentration, and carrier mobility of the films were investigated. The resistivity of the Sb-doped epitaxial (001) SnO2 thin film prepared using an ArF laser was lower than that of the film prepared using a KrF laser. The van der Pauw method was used to measure the resistivity, carrier concentration, and carrier mobility of the Sb-doped epitaxial (001) SnO2 thin films in order to determine the effect of Sb content on the electrical resistivity of the films. The lowest resistivity obtained for the Sb-doped epitaxial (001) SnO2 thin films prepared using ELAMOD with the ArF laser and 2 % Sb content was 2.5 × 10-3 Ω cm. The difference between the optimal Sb concentrations and resistivities of the films produced using either ELAMOD or conventional thermal MOD was discussed.

  11. Improving thermoelectric performance of TiNiSn by mixing MnNiSb in the half-Heusler structure.

    PubMed

    Berry, T; Ouardi, S; Fecher, G H; Balke, B; Kreiner, G; Auffermann, G; Schnelle, W; Felser, C

    2017-01-04

    The thermoelectric properties of the n-type semiconductor TiNiSn were optimized by partial substitution with metallic MnNiSb in the half Heusler structure. Herein, we study the transport properties and intrinsic phase separation in the Ti1-xMnxNiSn1-xSbx system. The alloys were prepared by arc-melting and annealed at temperatures obtained from differential thermal analysis and differential scanning calorimetry results. The phases were characterized using powder X-ray diffraction patterns, energy-dispersive X-ray spectroscopy, and differential scanning calorimetry. After annealing, the majority phase was TiNiSn with some Ni-rich sites, and the minority phases were primarily Ti6Sn5, Sn and MnSn2. The Ni-rich sites were caused by Frenkel defects; this led to metal-like behavior in the semiconductor specimens at low temperature. For x ≤ 0.05 the samples showed an activated conduction, whereas for x > 0.05 they showed metallic character. The figure of merit for x = 0.05 was increased by 61% (zT = 0.45) in comparison with the pure TiNiSn.

  12. Effects of the crystallographic orientation of Sn on the electromigration of Cu/Sn-Ag-Cu/Cu ball joints

    SciTech Connect

    Lee, Kiju; Kim, Keun-Soo; Tsukada, Yutaka; Suganuma, Katsuaki; Yamanaka, Kimihiro; Kuritani, Soichi; Ueshima, Minoru

    2011-11-17

    Electromigration behavior and fast circuit failure with respect to crystallographic orientation of Sn grains were examined. The test vehicle was Cu/Sn-3.0 wt% Ag-0.5 wt% Cu/Cu ball joints, and the applied current density was 15 kA/cm2 at 160 °C. The experimental results indicate that most of the solder bumps show different microstructural changes with respect to the crystallographic orientation of Sn grains. Fast failure of the bump occurred due to the dissolution of the Cu circuit on the cathode side caused by the fast interstitial diffusion of Cu atoms along the c-axis of the Sn grains when the c-axis was parallel to the electron flow. Slight microstructural changes were observed when the c-axis was perpendicular to the electron flow. In addition, Cu6Sn5 intermetallic compound (IMC) was formed along the direction of the c-axis of the Sn grains instead of the direction of electron flow in all solder ball joints.

  13. Co(x)Ni(4-x)Sb(12-y)Sn(y) Ternary Skutterudites: Processing and Thermoelectric Properties

    NASA Technical Reports Server (NTRS)

    Mackey, Jon; Sehirlioglu, Alp; Dynys, Fred

    2014-01-01

    Skutterudites have proven to be a useful thermoelectric system as a result of their high figure of merit, favorable mechanical properties, and good thermal stability. Binary skutterudites have received the majority of interest in recent years, as a result of successful double and triple filling schemes. Ternary skutterudites, such as Ni4Sb7Sn5, also demonstrate good thermoelectric performance, with high power factor and low thermal conductivity. Ternary skutterudites, as contrasted to binary systems, provide more possibility for tuning electronic structure as substitutions can be studied on three elements. The Co(x)Ni(4-x)Sb(12-y)Sn(y) system has been investigated as both a p- and n-type thermoelectric material, stable up to 200 C. The system is processed through a combination of solidification, mechanical alloying, and hot pressing steps. Rietveld structure refinement has revealed an interesting occupancy of Sn on both the 24g Wyckoff position with Sb as well as the 2a position as a rattler. In addition to thermoelectric properties, detailed processing routes have been investigated on the system.

  14. Equilibrium distribution of Fe, Ni, Sb, and Sn between liquid Cu and a CaO-rich slag

    NASA Astrophysics Data System (ADS)

    Gortais, J.; Hodaj, F.; Allibert, M.; Welter, J. M.

    1994-10-01

    Equilibrium measurements of the distribution of Fe, Ni, Sb, and Sn between a liquid Cu-O solution and a CaF2-CaO-MgO-SiO2 were carried out at 1500 K in a magnesia crucible. The results show that the studied solutes were in the states Fe(III), Ni(II), Sb(III), and Sn(IV), in the slag, for metal O contents ranging from 100 ppm to saturation at 2.1 pct. The Cu oxide solubility in the slag was also measured in absence of the solute elements. Its maximum solubility is about 4 ± 1 mass pct Cu2O. The compositions at equilibrium allow determination of the activity coefficients (referred to pure oxide) of the four solute oxides in the slag. These values, expressed in round figures to take into account the experimental uncertainties, are 10 for Fe2O3, 20 for NiO, 10 for SnO2, 1.6 10-2 for SbO1.5, and 60 for Cu2O.

  15. Nanoscale characterization of 1D Sn-3.5Ag nanosolders and their application into nanowelding at the nanoscale

    NASA Astrophysics Data System (ADS)

    Zhang, Hong; Zhang, Junwei; Lan, Qianqian; Ma, Hongbin; Qu, Ke; Inkson, Beverley J.; Mellors, Nigel J.; Xue, Desheng; Peng, Yong

    2014-10-01

    One-dimensional Sn-3.5Ag alloy nanosolders have been successfully fabricated by a dc electrodeposition technique into nanoporous templates, and their soldering quality has been demonstrated in nanoscale electrical welding for the first time, which indicates that they can easily form remarkably reliable conductive joints. The electrical measurement shows that individual 1D Sn-3.5Ag nanosolders have a resistivity of 28.9 μΩ·cm. The morphology, crystal structure and chemistry of these nanosolders have been characterized at the nanoscale. It is found that individual 1D Sn-3.5Ag alloy nanosolders have a continuous morphology and smooth surface. XPS confirms the presence of tin and silver with a mass ratio of 96.54:3.46, and EDX elemental mappings clearly reveal that the Sn and Ag elements have a uniform distribution. Coveragent beam electron diffractions verify that the crystal phases of individual 1D Sn-3.5Ag alloy nanosolders consist of matrix β-Sn and the intermetallic compound Ag3Sn. The reflow experiments reveal that the eutectic composition of the 1D Sn-Ag alloy nanowire is shifted to the Sn rich corner. This work may contribute one of the most important tin-based alloy nanosolders for future nanoscale welding techniques, which are believed to have broad applications in nanotechnology and the future nano-industry.

  16. Structural studies of GeTe-AgSbTe2 alloys

    SciTech Connect

    Thompson, A. J.; Sharp, Jeff; Rawn, Claudia J; Chakoumakos, Bryan C

    2008-01-01

    GeTe, a small bandgap semiconductor that has native p-type defects due to Ge vacancies, is an important constituent in the thermoelectric material known as 'TAGS' [1]. TAGS is an acronym for alloys of GeTe with AgSbTe2, and compositions are normally designated as TAGS-x, where x is the fraction of GeTe. TAGS-85 is the most important with regard to applications, and there also is commercial interest in TAGS-80. The crystal structure of GeTe1+d has a composition-dependent phase transformation at a temperature ranging from 430 C (d = 0) to {approx} 400 C (d = 0.02) [2]. The high temperature form is cubic. The low temperature form is rhombohedral for d < 0.01, as is the case for good thermoelectric performance. Addition of AgSbTe2 shifts the phase transformation to lower temperatures, and one of the goals of this work is a systematic study of the dependence of transformation temperature on the parameter x. We present results on phase transformations and associated instabilities in TAGS compositions in the range of 70-85 at.% GeTe.

  17. Microstructural, optical and electrical investigations of Sb-SnO{sub 2} thin films deposited by spray pyrolysis

    SciTech Connect

    Gupta, Sushant; Yadav, B.C.; Dwivedi, Prabhat K.; Das, B.

    2013-09-01

    Highlights: • We controlled structural, morphological, electrical, optical and physical (such as band gap energy) properties by altering the Sb doping concentration. • Variation in bandgap with Sb concentration is in agreement with the Burstein–Moss hypothesis and this hypothesis was further confirmed by plotting E{sub g} vs n{sup 2/3}. • The resistivity and mobility are in the range of 1.512–6.624 × 10{sup −3} Ω cm and 9.75–22.96 cm{sup 2} V{sup −1} s{sup −1}. The e-density lies between 4.11 × 10{sup 19} and 4.24 × 10{sup 20} cm{sup −3}. • We observed that Sb substitution in SnO{sub 2} lattice decreases the crystallite size and the possible reason for this is the creation of Sb monolayer on the surface of SnO{sub 2} crystallite. - Abstract: The structural, optical and electrical properties of spray deposited antimony (Sb) doped tin oxide (SnO{sub 2}) thin films, prepared from SnCl{sub 4} precursor, have been studied as a function of antimony doping concentration. The doping concentration was varied from 0 to 1.5 wt.% of Sb. The analysis of X-ray diffraction patterns revealed that the as deposited doped and undoped tin oxide thin films are pure crystalline tetragonal rutile phase of tin oxide which belongs to the space group P4{sub 2}/mnm (number 136). The surface morphological examination with field emission scanning electron microscopy (FESEM) revealed the fact that the grains are closely packed and pores/voids between the grains are very few. The resistivity (ρ) and mobility (μ) are in the range of 1.512 × 10{sup −3}–6.624 × 10{sup −3} Ω cm and 9.75–22.96 cm{sup 2} V{sup −1} s{sup −1}. The electron density lies between 4.11 × 10{sup 19} and 4.24 × 10{sup 20} cm{sup −3}. A thorough electrical investigation reveals that the film's resistivity depends on carrier concentration. It is found that ionized impurity scattering is the dominant mechanism, which limits the mobility of the carriers. The transmittance spectra for

  18. Stress relaxation behavior of composite and eutectic Sn-Ag solder joints

    NASA Astrophysics Data System (ADS)

    Jadhav, S. G.; Bieler, T. R.; Subramanian, K. N.; Lucas, J. P.

    2001-09-01

    Stress relaxation experiments were carried out at 25 C and 150 C on 96.5Sn-3.5Ag eutectic solder and Sn-Ag composite solder joints (Sn-Ag eutectic solder with 20 vol.% Cu6Sn5 reinforcements incorporated by in-situ methods). The magnitude of the stress drop during relaxation depends primarily upon the plastic shear strain imposed prior to the stress relaxation process. For sequential stress relaxation experiments that include unloading, the stress drop is nearly independent of the accumulated plastic shear strain. However, for sequential stress relaxation that does not include unloading, the stress relaxation is more dependent upon the cumulative plastic shear strain history. The stress in single shear lap joints does not relax to zero stress, as is observed in stress relaxation of bulk tension specimens, even at 150 C. Creep strain rates extracted from the relaxation data were much lower with smaller pre-strains in both eutectic Sn-Ag and composite solder joints. The stress exponent values (n) calculated from the stress relaxation test data ranged from 7 to 15 for both eutectic and composite solder joints, which were consistent with conventional creep data. These stress-relaxation behaviors can be explained on the basis of dislocation recovery processes that occur during relaxation and when specimens are unloaded.

  19. Ag{sub 1.75}InSb{sub 5.75}Se{sub 11}: A new noncentrosymmetric compound with congruent-melting behavior

    SciTech Connect

    Hao, Wenyu; Han, Yemao; Huang, Rongjin; Feng, Kai; Yin, Wenlong; Yao, Jiyong; Wu, Yicheng

    2014-10-15

    A new type of quaternary selenide Ag{sub 1.75}InSb{sub 5.75}Se{sub 11} has been synthesized. It crystallizes in the non-centrosymmetric space group Cm of monoclinic system, with a=13.419 (1) Å, b=4.084 (1) Å, and c=19.165 (2) Å, Z=2. The compound has a new three-dimensional layer structure which consists of infinite {sup 2}{sub ∞}[AgSb{sub 2}Se{sub 4}] layers and {sup 2}{sub ∞}[Ag1(Sb6)Ag3InSb{sub 3}Se{sub 8}] layers. The band gap of Ag{sub 1.75}InSb{sub 5.75}Se{sub 11} is 0.94(2) eV, which agrees with its dark gray color. Moreover, the compound exhibits congruent-melting behavior. - Graphical abstract: Ag{sub 1.75}InSb{sub 5.75}Se{sub 11} has a new three-dimensional layer structure which consists of infinite {sup 2}{sub ∞}[AgSb{sub 2}Se{sub 4}] layers and {sup 2}{sub ∞}[Ag1(Sb6)Ag3InSb{sub 3}Se{sub 8}] layers. - Highlights: • The new quaternary selenide Ag{sub 1.75}InSb{sub 5.75}Se{sub 11} has been synthesized. • It crystallizes in non-centrosymmetric space group Cm and has a new layer structure. • The structure consists of {sup 2}{sub ∞}[AgSb{sub 2}Se{sub 4}] layers and {sup 2}{sub ∞}[Ag1(Sb6)Ag3InSb{sub 3}Se{sub 8}] layers. • The band gap of Ag{sub 1.75}InSb{sub 5.75}Se{sub 11} is 0.94(2) eV. • The compound exhibits congruent-melting behavior.

  20. Engineering study on TiSnSb-based composite negative electrode for Li-ion batteries

    NASA Astrophysics Data System (ADS)

    Wilhelm, H. A.; Marino, C.; Darwiche, A.; Soudan, P.; Morcrette, M.; Monconduit, L.; Lestriez, B.

    2015-01-01

    Micrometric TiSnSb is a promising negative electrode material for Li-ion batteries when formulated with carboxymethyl cellulose (CMC) binder and a mixture of carbon black and carbon nanofibers, and cycled in a fluoroethylene carbonate (FEC)-containing electrolyte. Here, other binder systems were evaluated, polyacrylic acid (PAAH) mixed with CMC, CMC in buffered solution at pH 3 and amylopectin. However CMC showed the better performance in terms of cycle life of the electrode. Whatever the binder, cycle life decreases with increasing the active mass loading, which is attributed to both the precipitation of liquid electrolyte degradation products and to the loss of electrical contacts within the composite electrode and with the current collector as a consequence of the active particles volume variations. Furthermore, calendaring the electrode unfortunately decreases the cycle life. The rate performance was studied as a function of the active mass loading and was shown to be determined by the electrode polarization resistance. Finally, full cells cycling tests with Li1Ni1/3Co1/3Mn1/3O2 at the positive electrode were done. 60% of the capacity is retained after 200 cycles at the surface capacity of 2.7 mAh cm-2.

  1. Low Temperature Study of the Electrical Properties of Sb- SnO2 Nanofibers

    NASA Astrophysics Data System (ADS)

    Reyna, Maritza; Ramos, Idalia; Pinto, Nicholas

    2011-03-01

    Antimony-doped tin oxide (ATO) can be used for many applications including the development of gas sensors, energy storage devices, and transparent electrodes. ATO nanofibers with sizes from 200 - 600 nm and a bandgap of 4.4 e.V were produced using the electrospinning method. The precursor was composed of tin chloride solution mixed with cellulose acetate solution and antimonium chloride. The XRD spectra of the nanofibers showed the characteristic peaks of Sb: Sn O2 with rutile structure. The electrical properties of single ATO nanofibers were studied following a cycle of cooling from 295 - 15 K and then heating from 15 - 295 K. These measurements were done in cold finger (close cycle helium refrigerator) in a vacuum. The conductivity measured at room temperature was 4.3 S/cm and decreases monotonically from 295 to 15K. As the temperature increases an anomalous peak is observed in the range of 250 to 300 K. This anomaly has been attributed to the chemi-absorbed molecules on the surface of the fiber and could be reduced by improving the vacuum conditions. PREM (NSF-DMR-0934195) and APS (Minority Scholarship for Undergraduates).

  2. Influence of Sn on the thermoelectric properties of (Bi{sub x}Sb{sub 1-x}){sub 2}Te{sub 3} single crystals

    SciTech Connect

    Kulbachinskii, V.A.; Kytin, V.G.; Kudryashov, A.A.; Lunin, R.A.

    2012-09-15

    The influence of tin on the thermoelectric properties of p-(Bi{sub x}Sb{sub 1-x}){sub 2}Te{sub 3} single crystals (x=0; 0.25; 0.5) has been investigated. The temperature dependence of the Seebeck coefficient S, the electrical conductivity {sigma}, the heat conductivity k and the thermoelectric figure of merit of p-(Bi{sub x}Sb{sub 1-x}){sub 2}Te{sub 3} single crystals were measured in the temperature range 7-300 K. By an increase the Sn content, the hole concentration increases in p-(Bi{sub x}Sb{sub 1-x}){sub 2-y}Sn{sub y}Te{sub 3}. The heat conductivity k of the p-(Bi{sub x}Sb{sub 1-x}){sub 2-y}Sn{sub y}Te{sub 3} crystals decreases due to the Sn doping, while the electrical conductivity {sigma} increases in the temperature interval about 200Sn doping in the whole temperature range. The scattering on the ionized impurity increases due to Sn doping. - Graphical abstract: Influence of tin on the thermoelectric properties of p-(Bi{sub x}Sb{sub 1-x}){sub 2}Te{sub 3} single crystals (x=0; 0.25; 0.5) has been investigated. Temperature dependence of Seebeck coefficient S, electrical conductivity {sigma}, thermal conductivity k and figure of merit of p-(Bi{sub x}Sb{sub 1-x}){sub 2}Te{sub 3} single crystals were measured in the temperature range 7-300 K. Electrical conductivity increases in the temperature interval 150KSn-doping. Concentration of holes and electrical conductivity decreases when the value of Bi content x increases in solid solution (Bi{sub x}Sb{sub 1-x}){sub 2}Te{sub 3} as shown in figure. By increasing the Sn content, the hole concentration increases in p-(Bi{sub x}Sb{sub 1-x}){sub 2-y}Sn{sub y}Te{sub 3}. The thermal conductivity k of the p-(Bi{sub x}Sb{sub 1-x}){sub 2-y}Sn{sub y}Te{sub 3} crystals decreases due to Sn doping. The Seebeck coefficient S for all compositions is positive and decreases due

  3. Spreading of Sn-Ag solders on FeNi alloys

    SciTech Connect

    Saiz, Eduardo; Hwang, C-W.; Suganuma, Katsuaki; Tomsia, Antoni P.

    2003-02-28

    The spreading of Sn-3Ag-xBi solders on Fe-42Ni has been studied using a drop transfer setup. Initial spreading velocities as fast as {approx}0.5 m/s have been recorded. The results are consistent with a liquid front moving on a metastable, flat, unreacted substrate and can be described by using a modified molecular-kinetic model for which the rate controlling step is the movement of one atom from the liquid to the surface of the solid substrate. Although the phase diagram predicts the formation of two Fe-Sn intermetallics at the solder/substrate interface in samples heated at temperatures lower than 513 C, after spreading at 250 C only a thin FeSn reaction layer could be observed. Two interfacial layers (FeSn and FeSn2) were found after spreading at 450 C.

  4. The effect of strain rate and temperature on the tensile properties of Sn-3.5Ag solder

    SciTech Connect

    Lang Fengqun . E-mail: fqlang325@yahoo.co.jp; Tanaka, Hiroyuki; Munegata, Osamu; Taguchi, Toshihiko; Narita, Toshio

    2005-03-15

    The tensile response of Sn-3.5% Ag solder was investigated and compared with that of a Sn-37% Pb eutectic solder at various strain rates from 2.38x10{sup -6} s{sup -1} to 2.38x10{sup -3} s{sup -1} over the temperature range from -50 deg. C to 150 deg. C. The relationship between tensile strength, {sigma} {sub UTS}, and strain rate, {epsilon}', for Sn-3.5Ag can be expressed by the equation {sigma} {sub UTS}=A{epsilon}' {sup m}. The influence of temperature on the strain rate sensitivity index m was very slight for Sn-3.5Ag, whereas the m values of Sn-37Pb increased strongly with increasing temperature. The relationship between the tensile strength of the Sn-3.5Ag alloy and temperature follows an Arrhenius law, and the activation energy for creep was found to be 78 kJ/mol, close to that for the pipe diffusion controlled creep of tin. The microstructure and fracture morphologies of both solders were observed with a scanning electron microscope. Ag{sub 3}Sn particles were observed in the primary {beta}-Sn in the Sn-3.5Ag solder by transmission electron microscope.

  5. Electromigration Behaviors of Cu Reinforced Sn-3.5Ag Composite Solder Joints

    NASA Astrophysics Data System (ADS)

    Wang, Yan; Han, Jing; Ma, Limin; Zuo, Yong; Guo, Fu

    2016-12-01

    The composite approach, by incorporating small amounts of reinforcement particles in the solder matrix, has proven to be one of the effective ways to improve the reliability of solder joints. The effects of Cu addition on electromigration were investigated in this study by incorporating 2% volume fraction Cu particles into Sn-3.5Ag eutectic solder paste by the in situ process. The one-dimensional solder joints, designed to prevent the current crowding effect, were stressed under a constant current density of 104 A/cm2 at room temperature, and the temperature of the sample could reach 105 ± 5°C due to the Joule heating effect. Doping 2 vol.% Cu was found to retard the electromigration phenomenon effectively. After electric current stressing for 528 h, the growth rate of an interfacial intermetallic compound (IMC) layer at the anode decreased 73% in contrast to that of Sn-3.5Ag solder joints, and the IMC layer at the cathode was almost unchanged. The polarization effect of Cu reinforced composite solder joints was also apparently mitigated. In addition, the surface damage of the composite solder joints was relieved by incorporating 2 vol.% Cu particles. Compared to Sn-3.5Ag solder joints, which had protruded Cu6Sn5 and wrinkles of Sn-solder matrix on the surface, the solder joints with Cu addition had a more even surface.

  6. Thermoelectric device including an alloy of GeTe and AgSbTe as the P-type element

    DOEpatents

    Skrabek, Emanuel Andrew; Trimmer, Donald Smith

    1976-01-01

    Improved alloys suitable for thermoelectric applications and having the general formula: (AgSbTe.sub.2).sub.1.sub.-x + (GeTe).sub.x wherein x has a value of about 0.80 and 0.85, have been found to possess unexpectedly high thermoelectric properties such as efficiency index, as well as other improved physical properties.

  7. Influence of root temperature on phytoaccumulation of As, Ag, Cr, and Sb in potato plants (Solanum tuberosum L. var. Spunta).

    PubMed

    Baghour, M; Moreno, D A; Hernández, J; Castilla, N; Romero, L

    2001-01-01

    Three consecutive years of field experiments were carried out to investigate the effect of root temperatures induced by the application of mulches for phytoextraction of As, Ag, Cr and Sb using potato plants (roots, tubers, stems and leaflets). Four different plastic covers were used (T1: transparent polyethylene; T2: white polyethylene; T3: white and black coextruded polyethylene; and T4: black polyethylene), taking uncovered plants as control (T0). The different treatments had a significant effect on mean root temperatures (T0 = 16 degrees C, T1 = 20 degrees C, T2 = 23 degrees C, T3 = 27 degrees C and T4 = 30 degrees C) and induced a significantly different response in the As, Ag, Cr and Sb phytoaccumulation. The T3 treatment gave rise to the greatest phytoaccumulation of As, Ag, Cr and Sb in the roots, leaflets and tubers. In terms of the relative distribution of the phytoaccumulated metals (with respect to the total of the plant), As accumulated mainly in the roots and leaflets whereas Ag, Cr and Sb accumulated primarily in the tubers, establishing a close relationship between biomass development of each organ and phytoaccumulation capacity of elements in response to temperature in the root zone. With regard to phytoremediation using the potato plant, it is necessary to ascertain the influence and include the control of the thermal regime of the soil to optimize the phytoextraction of pollutants.

  8. Spin-Diffusion Lengths in Ag(4%Sn) and Cu(2%Ge) alloys

    NASA Astrophysics Data System (ADS)

    Sharma, Amit; Richard, Brandon; Fowler, Quinton; Loloee, Reza; Pratt, William, Jr.; Bass, Jack

    2008-03-01

    Alloying Ag with a little Sn, or Cu with a little Ge, greatly increases elastic scattering of electrons---i.e., greatly decreases the electron mean-free-path (mfp), but does not produce much spin-flipping---i.e., leaves the electron spin-diffusion length, l, relatively long. Thus, dilute AgSn and CuGe alloys were used to study effects of changing the mfp on current-perpendicular-to-plane (CPP) magnetoresistance [1] and current-induced magnetization switching (CIMS) [2], while leaving spin-flipping weak. Published transport data in dilute AgSn and CuGe alloys give only lower bounds for l [3-5]. We find l = 34 ± 4 nm for Ag(4%Sn) and l = 125 ± 10 nm for Cu(2%Ge). [1] K. Eid et al., J. Magn. Magn. Mat. 224, L205 (2001). [2] N. Theodoropoulou et al., Phys. Rev. B (rapid comm.) in press. [3] S.-F.Lee et al., J. Magn. Magn. Mat. 118, L1 (993). [4] J. Bass et al, Mat. Sci. and Eng. B31, 77 (1995). [5] J. Bass and W.P. Pratt Jr., J. Phys. Cond. Matt. 19, 183201 (2007).

  9. Reliability Investigations on SnAg Bumps on Substrate Pads with Different Pad Finish

    SciTech Connect

    Bauer, R.; Ebersberger, B.; Kupfer, C.; Alexa, L.

    2006-02-07

    SnAg solder bump is one bump type which is used to replace eutectic SnPb bumps. In this work tests have been done to characterize the reliability properties of this bump type. Electromigration (EM) tests, which were accelerated by high current and high temperature and high temperature storage (HTS) tests were performed. It was found that the reliability properties are sensitive to the material combinations in the interconnect stack. The interconnect stack includes substrate pad, pad finish, bump, underbump metallization (UBM) and the chip pad. Therefore separate test groups for SnAg bumps on Cu substrate pads with organic solderability preservative (OSP) finish and the identical bumps on pads with Ni/Au finish were used. In this paper the reliability test results and the corresponding failure analysis are presented. Some explanations about the differences in formation of intermetallic compounds (IMCs) are given.

  10. Filled Co (sub X) Ni (sub 4-x) Sb (sub 12-y) Sn (sub Y) Skutterudites: Processing and Thermoelectric Properties

    NASA Technical Reports Server (NTRS)

    Mackey, Jon; Sehirlioglu, Alp; Dynys, Fred

    2015-01-01

    Skutterudites have proven to be a useful thermoelectric system as a result of their enhanced figure of merit (ZT1), cheap material cost, favorable mechanical properties, and good thermal stability. The majority of skutterudite interest in recent years has been focused on binary skutterudites like CoSb3 or CoAs3. Binary skutterudites are often double and triple filled, with a range of elements from the lanthanide series, in order to reduce the lattice component of thermal conductivity. Ternary and quaternary skutterudites, such as Co4Ge6Se6 or Ni4Sb8Sn4, provide additional paths to tune the electronic structure. The thermal conductivity can further be improved in these complex skutterudites by the introduction of fillers. The Co (sub X) Ni (sub 4-x) Sb (sub 12-y) Sn (sub Y) system has been investigated as both a p- and n-type thermoelectric material, and is stable up to 200 degrees Centigrade. Yb, Ce, and Dy fillers have been introduced into the skutterudite to study the influence of both the type and the quantity of fillers on processing conditions and thermoelectric properties. The system was processed through a multi-step technique that includes solidification, mechano-chemical alloying, and hot pressing which will be discussed along with thermoelectric transport properties.

  11. Wetting reaction of Sn-Ag based solder systems on Cu substrates plated with Au and/or Pd layer

    NASA Astrophysics Data System (ADS)

    Liu, C. Y.; Li, Jian; Vandentop, G. J.; Choi, W. J.; Tu, K. N.

    2001-05-01

    The wetting behavior of SnAg based Pb-free solders on Cu and Cu substrates plated with Au, Pd, and Au/Pd thin films have been studied. The wetting angle and kinetics of interfacial reaction were measured. The Au-plated substrates exhibit better wetting than the Pd-plated substrates. In the case of SnAg on Pd-plated Cu, SEM observation revealed that the solder cap was surrounded by an innerring of Cu-Sn compound and an outer ring of Pd-Sn compound. This implies that the molten SnAg solder had removed the Pd and wetted the Cu directly in the equilibrium state. The effects of pre-doping Cu in the SnAg solder on wetting behavior were also investigated. We found that wettability decreases with increasing Cu content in the solder. We also observed that the SnAgCu solders have a lower Cu consumption rate than the SnAg solder.

  12. Electronic properties and topological phases of ThXY (X = Pb, Au, Pt and Y = Sb, Bi, Sn) compounds

    NASA Astrophysics Data System (ADS)

    Zahra, Nourbakhsh; Aminollah, Vaez

    2016-03-01

    The electronic properties and topological phases of ThXY (X = Pb, Au, Pt, Pd and Y = Sb, Bi, Sn) compounds in the presence of spin-orbit coupling, using density functional theory are investigated. The ThPtSn compound is stable in the ferromagnetic phase and the other ThXY compounds are stable in nonmagnetic phases. Band structures of these compounds in topological phases (insulator or metal) and normal phases within generalized gradient approximation (GGA) and Engel-Vosko generalized gradient approximation (GGA_EV) are compared. The ThPtSn, ThPtBi, ThPtSb, ThPdBi, and ThAuBi compounds have topological phases and the other ThXY compounds have normal phases. Band inversion strengths and topological phases of these compounds at different pressure are studied. It is seen that the band inversion strengths of these compounds are sensitive to pressure and for each compound a second-order polynomial fitted on the band inversion strengths-pressure curves.

  13. Viscosity of liquid Ag-In-Sb-Te: Evidence of a fragile-to-strong crossover

    NASA Astrophysics Data System (ADS)

    Orava, J.; Weber, H.; Kaban, I.; Greer, A. L.

    2016-05-01

    The temperature-dependent viscosity η(T) is measured for the equilibrium liquid of the chalcogenide Ag-In-Sb-Te (AIST), the first time this has been reported for a material of actual interest for phase-change memory. The measurements, in the range 829-1254 K, are made using an oscillating-crucible viscometer, and show a liquid with high fragility and low viscosity, similar to liquid pure metals. Combining the high-temperature viscosity measurements with values inferred from crystal growth rates in the supercooled liquid allows the form of η(T) to be estimated over the entire temperature range from above the melting point down to the glass transition. It is then clear that η(T) for liquid AIST cannot be described with a single fragility value, unlike other phase-change chalcogenides such as liquid Ge-Sb-Te. There is clear evidence for a fragile-to-strong crossover on cooling liquid AIST, similar to that analyzed in Te85Ge15. The change in fragility associated with the crossover in both these cases is rather weak, giving a broad temperature range over which η(T) is near-Arrhenius. We discuss how such behavior may be beneficial for the performance of phase-change memory. Consideration of the fragile-to-strong crossover in liquid chalcogenides may be important in tuning compositions to optimize the device performance.

  14. Ternary eutectic growth of Ag-Cu-Sb alloy within ultrasonic field

    NASA Astrophysics Data System (ADS)

    Zhai, Wei; Hong, Zhenyu; Wei, Bingbo

    2007-08-01

    The liquid to solid transformation of ternary Ag42.4Cu21.6Sb36 eutectic alloy was accomplished in an ultrasonic field with a frequency of 35 kHz, and the growth mechanism of this ternary eutectic was examined. Theoretical calculations predict that the sound intensity in the liquid phase at the solidification interface increases gradually as the interface moves up from the sample bottom to its top. The growth mode of ( ɛ + θ + Sb) ternary eutectic exhibits a transition of “divorced eutectic—mixture of anomalous and regular structures—regular eutectic” along the sample axis due to the inhomogeneity of sound field distribution. In the top zone with the highest sound intensity, the cavitation effect promotes the three eutectic phases to nucleate independently, while the acoustic streaming efficiently suppresses the coupled growth of eutectic phases. In the meantime, the ultrasonic field accelerates the solute transportation at the solid-liquid interface, which reduces the solute solubility of eutectic phases.

  15. Measurement and prediction of contact angles of Pb-free Sn-Ag solder alloys on Cu substrate

    NASA Astrophysics Data System (ADS)

    Erer, A. M.; Candan, E.; Güven, M. H.; Turen, Y.

    2011-04-01

    The contact angle (Θ) of molten Sn and Sn-Ag alloys (0.5, 1.5, 3.5, 6 wt.% Ag) on Cu substrates have been studied by using sessile drop method at various temperatures (230, 250, 275 and 300 °C). Experimental results showed that additions of Ag to Sn resulted in a continuous decrease in the Θ up to 3.5 wt.% above which the Θ value was increased. Increasing alloy temperature also decreased the Θ proportionally. Experimental results revealed that a correlation between the Θ, alloy composition and the alloy temperature exists which yielded an empirical model to predict the Θ at a given Ag content and temperature for a given Sn-Ag alloy. The empirical model predicts the Θ reasonably well with the present work and the other published works.

  16. LED Die-Bonded on the Ag/Cu Substrate by a Sn-BiZn-Sn Bonding System

    NASA Astrophysics Data System (ADS)

    Tang, Y. K.; Hsu, Y. C.; Lin, E. J.; Hu, Y. J.; Liu, C. Y.

    2016-12-01

    In this study, light emitting diode (LED) chips were die-bonded on a Ag/Cu substrate by a Sn-BixZn-Sn bonding system. A high die-bonding strength is successfully achieved by using a Sn-BixZn-Sn ternary system. At the bonding interface, there is observed a Bi-segregation phenomenon. This Bi-segregation phenomenon solves the problems of the brittle layer-type Bi at the joint interface. Our shear test results show that the bonding interface with Bi-segregation enhances the shear strength of the LED die-bonding joints. The Bi-0.3Zn and Bi-0.5Zn die-bonding cases have the best shear strength among all die-bonding systems. In addition, we investigate the atomic depth profile of the deposited Bi-xZn layer by evaporating Bi-xZn E-gun alloy sources. The initial Zn content of the deposited Bi-Zn alloy layers are much higher than the average Zn content in the deposited Bi-Zn layers.

  17. Effects of Cooling Rate on the Microstructure and Morphology of Sn-3.0Ag-0.5Cu Solder

    NASA Astrophysics Data System (ADS)

    Lee, Hwa-Teng; Huang, Kuo-Chen

    2016-01-01

    This study explored the effect of the cooling rate on the microstructure and morphology of Sn-3.0Ag-0.5Cu (SAC305) lead-free solder. In the experiments, rapid cooling (P1: 63.17°C/s) of SAC305 solder resulted in high tensile strength (60.8 MPa) with no significant loss in ductility (strain >40%) due to the formation of fine-grained primary β-Sn (average size ˜14 μm) surrounded by a network-like fine eutectic structure consisting of β-Sn and particle-like Ag3Sn compound. As the cooling rate was reduced, the morphology of the Ag3Sn compound evolved progressively from a particle- to a needle-like form and finally to a leaf- or plate-like form. The cooling rate significantly affected the β-Sn grain size and the morphology of the Ag3Sn compound. Water cooling (at the fastest cooling rate of 100°C/s) of a solder sample resulted in a microstructure consisting of the finest structure of Ag3Sn and β-Sn with no Cu6Sn5, consequently exhibiting the highest hardness of the various specimens. By contrast, after cooling at the slowest rate of 0.008°C/s, the sample exhibited a coarse eutectic structure consisting of large plate-like Ag3Sn compound and isolated long rod-like Cu6Sn5 precipitates. This coarse structure resulted in both lower hardness and poorer tensile strength.

  18. Intermetallic compounds formed at the interface between Cu substrate and an Sn-9Zn-0.5Ag lead-free solder

    SciTech Connect

    Chang, T.-C.; Hon, M.-H.; Wang, M.-C

    2003-04-30

    The intermetallic compounds (IMCs) formed at the interface between Cu substrate and an Sn-9Zn-0.5Ag lead-free solder alloy have been investigated by X-ray diffraction (XRD), transmission electron microscopy (TEM) and electron diffraction (ED). The XRD patterns show that the main IMCs formed at the interface of Sn-9Zn-0.5Ag/Cu are {gamma}-Cu{sub 5}Zn{sub 8} and {eta}'-Cu{sub 6}Sn{sub 5}. The Ag{sub 3}Sn IMC with orthorhombic structure was also observed at the Sn-9Zn-0.5Ag/Cu interface by TEM and ED analyses. The interfacial adhesion strength between the Cu substrate and Sn-9Zn-0.5Ag lead-free solder alloy is higher than that of the Sn-9Zn alloy due to the formation of Ag{sub 3}Sn IMC at the interface.

  19. Synthesis and high temperature thermoelectric properties of Yb0.25Co4Sb12-(Ag2Te)x(Sb2Te3)1−x nanocomposites

    PubMed Central

    Zheng, Jin; Peng, Jiangying; Zheng, Zhexin; Zhou, Menghan; Thompson, Emily; Yang, Junyou; Xiao, Wanli

    2015-01-01

    Nanocomposites are becoming a new paradigm in thermoelectric study: by incorporating nanophase(s) into a bulk matrix, a nanocomposite often exhibits unusual thermoelectric properties beyond its constituent phases. To date most nanophases are binary, while reports on ternary nanoinclusions are scarce. In this work, we conducted an exploratory study of introducing ternary (Ag2Te)x(Sb2Te3)1−x inclusions in the host matrix of Yb0.25Co4Sb12. Yb0.25Co4Sb12-4wt% (Ag2Te)x(Sb2Te3)1−x nanocomposites were prepared by a melting-milling-hot-pressing process. Microstructural analysis showed that poly-dispersed nanosized Ag-Sb-Te inclusions are distributed on the grain boundaries of Yb0.25Co4Sb12 coarse grains. Compared to the pristine nanoinclusion-free sample, the electrical conductivity, Seebeck coefficient, and thermal conductivity were optimized simultaneously upon nanocompositing, while the carrier mobility was largely remained. A maximum ZT of 1.3 was obtained in Yb0.25Co4Sb12-4wt% (Ag2Te)0.42(Sb2Te3)0.58 at 773 K, a ~ 40% increase compared to the pristine sample. The electron and phonon mean-free-path were estimated to help quantify the observed changes in the carrier mobility and lattice thermal conductivity. PMID:26389111

  20. Ambient Temperature Ultrasonic Bonding of Si-Dice Using Sn-3.5wt.%Ag

    NASA Astrophysics Data System (ADS)

    Kim, Jung-Mo; Jung, Jae-Pil; Zhou, Y. Norman; Kim, Jong-Young

    2008-03-01

    Ultrasonic bonding of Si-dice to type FR-4 printed circuit boards (PCB) with Sn-3.5wt.%Ag solder at ambient temperature was investigated. The under-bump metallization (UBM) on the Si-dice comprised Cu/Ni/Al from top to bottom with thicknesses of 0.4 μm, 0.4 μm, and 0.3 μm, respectively. The pads on the PCBs consisted of Au/Ni/Cu with thicknesses of 0.05/5/18 μm, sequentially from top to bottom. Solder was supplied as Sn-3.5wt.%Ag foil rolled to 100 μm thickness, and inserted in the joints. The ultrasonic bonding time was varied from 0.5 s to 3.0 s, and the ultrasonic power was 1400 W. The experimental results showed that reliable joints could be produced between the Si-dice and the PCBs with Sn-3.5wt.%Ag solder. The joint breaking force of “Si-die/solder/FR-4” increased with bonding times up to 2.5 s with a maximum value of 65 N. A bonding time of 3.0 s proved to be excessive, and resulted in cracks along the intermetallic compound between the UBM and solder, which caused a decrease in the bond strength. The intermetallic compound produced by ultrasonic bonding between the UBM and solder was confirmed to be (Cu, Ni)6Sn5.

  1. The Melting Characteristics and Interfacial Reactions of Sn-ball/Sn-3.0Ag-0.5Cu-paste/Cu Joints During Reflow Soldering

    NASA Astrophysics Data System (ADS)

    Huang, J. Q.; Zhou, M. B.; Zhang, X. P.

    2017-03-01

    In this work, the melting characteristics and interfacial reactions of Sn-ball/Sn-3.0Ag-0.5Cu-paste/Cu (Sn/SAC305-paste/Cu) structure joints were studied using differential scanning calorimetry, in order to gain a deeper and broader understanding of the interfacial behavior and metallurgical combination among the substrate (under-bump metallization), solder ball and solder paste in a board-level ball grid array (BGA) assembly process, which is often seen as a mixed assembly using solder balls and solder pastes. Results show that at the SAC305 melting temperature of 217°C, neither the SAC305-paste nor the Sn-ball coalesce, while an interfacial reaction occurs between the SAC305-paste and Cu. A slight increase in reflow temperature (from 217°C to 218°C) results in the coalescence of the SAC305-paste with the Sn-ball. The Sn-ball exhibits premelting behavior at reflow temperatures below its melting temperature, and the premelting direction is from the bottom to the top of the Sn-ball. Remarkably, at 227°C, which is nearly 5°C lower than the melting point of pure Sn, the Sn-ball melts completely, resulting from two eutectic reactions, i.e., the reaction between Sn and Cu and that between Sn and Ag. Furthermore, a large amount of bulk Cu6Sn5 phase forms in the solder due to the quick dissolution of Cu substrate when the reflow temperature is increased to 245°C. In addition, the growth of the interfacial Cu6Sn5 layer at the SAC305-paste/Cu interface is controlled mainly by grain boundary diffusion, while the growth of the interfacial Cu3Sn layer is controlled mainly by bulk diffusion.

  2. The Melting Characteristics and Interfacial Reactions of Sn-ball/Sn-3.0Ag-0.5Cu-paste/Cu Joints During Reflow Soldering

    NASA Astrophysics Data System (ADS)

    Huang, J. Q.; Zhou, M. B.; Zhang, X. P.

    2016-12-01

    In this work, the melting characteristics and interfacial reactions of Sn-ball/Sn-3.0Ag-0.5Cu-paste/Cu (Sn/SAC305-paste/Cu) structure joints were studied using differential scanning calorimetry, in order to gain a deeper and broader understanding of the interfacial behavior and metallurgical combination among the substrate (under-bump metallization), solder ball and solder paste in a board-level ball grid array (BGA) assembly process, which is often seen as a mixed assembly using solder balls and solder pastes. Results show that at the SAC305 melting temperature of 217°C, neither the SAC305-paste nor the Sn-ball coalesce, while an interfacial reaction occurs between the SAC305-paste and Cu. A slight increase in reflow temperature (from 217°C to 218°C) results in the coalescence of the SAC305-paste with the Sn-ball. The Sn-ball exhibits premelting behavior at reflow temperatures below its melting temperature, and the premelting direction is from the bottom to the top of the Sn-ball. Remarkably, at 227°C, which is nearly 5°C lower than the melting point of pure Sn, the Sn-ball melts completely, resulting from two eutectic reactions, i.e., the reaction between Sn and Cu and that between Sn and Ag. Furthermore, a large amount of bulk Cu6Sn5 phase forms in the solder due to the quick dissolution of Cu substrate when the reflow temperature is increased to 245°C. In addition, the growth of the interfacial Cu6Sn5 layer at the SAC305-paste/Cu interface is controlled mainly by grain boundary diffusion, while the growth of the interfacial Cu3Sn layer is controlled mainly by bulk diffusion.

  3. Sb2O3/Ag/Sb2O3 Multilayer Transparent Conducting Films For Ultraviolet Organic Light-emitting Diode

    NASA Astrophysics Data System (ADS)

    Song, Chunyan; Zhang, Nan; Lin, Jie; Guo, Xiaoyang; Liu, Xingyuan

    2017-01-01

    A novel UV transparent conducting films based on Sb2O3/Ag/Sb2O3 (SAS) structure, which were prepared by an electron-beam thermal evaporation at room temperature. This SAS exhibits excellent electrical, optical and stable properties. Especially for UV region, the SAS has high transmittance of 80% at 306 nm and 92% at 335 nm, meanwhile achieving low sheet resistance ( ≤ 10 Ω sq‑1). The UV OLED based on the SAS show competitive device performance. The UV OLED obtains the peak of UV electroluminescence at 376 nm and shows a very high maximum EQE of 4.1% with the maximum output power density of 5.18 mW cm‑2. These results indicate that the potential of SAS applications in deep UV transparent electrodes and large-scale flexible transparent electronics.

  4. Sb2O3/Ag/Sb2O3 Multilayer Transparent Conducting Films For Ultraviolet Organic Light-emitting Diode

    PubMed Central

    Song, Chunyan; Zhang, Nan; Lin, Jie; Guo, Xiaoyang; Liu, Xingyuan

    2017-01-01

    A novel UV transparent conducting films based on Sb2O3/Ag/Sb2O3 (SAS) structure, which were prepared by an electron-beam thermal evaporation at room temperature. This SAS exhibits excellent electrical, optical and stable properties. Especially for UV region, the SAS has high transmittance of 80% at 306 nm and 92% at 335 nm, meanwhile achieving low sheet resistance ( ≤ 10 Ω sq−1). The UV OLED based on the SAS show competitive device performance. The UV OLED obtains the peak of UV electroluminescence at 376 nm and shows a very high maximum EQE of 4.1% with the maximum output power density of 5.18 mW cm−2. These results indicate that the potential of SAS applications in deep UV transparent electrodes and large-scale flexible transparent electronics. PMID:28120888

  5. Electrocatalytic oxidation of phenol from wastewater using Ti/SnO2-Sb2O4 electrode: chemical reaction pathway study.

    PubMed

    Loloi, Mahshid; Rezaee, Abbas; Aliofkhazraei, Mahmood; Rouhaghdam, Alireza Sabour

    2016-10-01

    In this study, a titanium plate was impregnated with SnO2 and Sb (Ti/SnO2-Sb2O4) for the electrocatalytic removal of phenol from wastewater, and the chemical degradation pathway was presented. The effects of various parameters such as pH, current density, supporting electrolyte, and initial phenol concentration were studied. At optimum conditions, it was found that phenol was quickly oxidized into benzoquinone because of the formation of various strong radicals during electrolysis by the Ti/SnO2-Sb2O4 anode from 100 to <1 mg/L over 1 h. The results of GC/MS analysis showed the presence of some esters of organic acid such as oxalic acid and formic acid. HPLC analysis showed only trace amounts of benzoquinone remaining in the solution. The efficiency of TOC removal at the Ti/SnO2-Sb2O4 anode surface showed a degradation rate of 49 % over 2 h. Results showed that the molecular oxygen potential at the electrode was 1.7 V. The phenol removal mechanism at the surface of the Ti/SnO2-Sb2O4 anode was influenced by the pH. Under acidic conditions, the mechanism of electron transfer occurred directly, whereas under alkaline conditions, the mechanism can be indirect. This research shows that the proposed electrolyte can significantly influence the efficiency of phenol removal. It can be concluded that the treatment using an appropriate Ti/SnO2-Sb2O4 electrode surface can result in the rapid oxidation of organic pollutants.

  6. Silver(I) complexes of the weakly coordinating solvents SO(2) and CH(2)Cl(2): crystal structures, bonding, and energetics of [Ag(OSO)][Al{OC(CF(3))(3)}(4)], [Ag(OSO)(2/2)][SbF(6)], and [Ag(CH(2)Cl(2))(2)][SbF(6)].

    PubMed

    Decken, Andreas; Knapp, Carsten; Nikiforov, Grigori B; Passmore, Jack; Rautiainen, J Mikko; Wang, Xinping; Zeng, Xiaoqing

    2009-06-22

    Pushing the limits of coordination chemistry: The most weakly coordinated silver complexes of the very weakly coordinating solvents dichloromethane and liquid sulfur dioxide were prepared. Special techniques at low temperatures and the use of weakly coordinating anions allowed structural characterization of [Ag(OSO)][Al{OC(CF(3))(3)}(4)], [Ag(OSO)(2/2)][SbF(6)], and [Ag(Cl(2)CH(2))(2)][SbF(6)] (see figure). An investigation of the bonding shows that these complexes are mainly stabilized by electrostatic monopole-dipole interactions.The synthetically useful solvent-free silver(I) salt Ag[Al(pftb)(4)] (pftb=--OC(CF(3))(3)) was prepared by metathesis reaction of Li[Al(pftb)(4)] with Ag[SbF(6)] in liquid SO(2). The solvated complexes [Ag(OSO)][Al(pftb)(4)], [Ag(OSO)(2/2)][SbF(6)], and [Ag(CH(2)Cl(2))(2)][SbF(6)] were prepared and isolated by special techniques at low temperatures and structurally characterized by single-crystal X-ray diffraction. The SO(2) complexes provide the first examples of coordination of the very weak Lewis base SO(2) to silver(I). The SO(2) molecule in [Ag(OSO)][Al(pftb)(4)] is eta(1)-O coordinated to Ag(+), while the SO(2) ligands in [Ag(OSO)(2/2)][SbF(6)] bridge two Ag(+) ions in an eta(2)-O,O' (trans,trans) manner. [Ag(CH(2)Cl(2))(2)][SbF(6)] contains [Ag(CH(2)Cl(2))(2)](+) ions linked through [SbF(6)](-) ions to give a polymeric structure. The solid-state silver(I) ion affinities (SIA) of SO(2) and CH(2)Cl(2), based on bond lengths and corresponding valence units in the corresponding complexes and tensimetric titrations of Ag[Al(pftb)(4)] and Ag[SbF(6)] with SO(2) vapor, show that SO(2) is a weaker ligand to Ag(+) than the commonly used weakly coordinating solvent CH(2)Cl(2) and indicated that binding strength of SO(2) to silver(I) in the silver(I) salts increases with increasing size of the corresponding counteranion ([Al(pftb)(4)](-)>[SbF(6)](-)). The experimental findings are in good agreement with theoretical gas-phase ligand

  7. Infrared, Raman, 1H NMR, thermal and positron annihilation lifetime studies of Pb(II), Sn(II), Sb(III), Bi(III)-barbital complexes

    NASA Astrophysics Data System (ADS)

    Refat, Moamen S.; Sharshar, T.

    2012-05-01

    Metal complexes of Pb(II), Sn(II), Sb(III) and Bi(III) with a barbital sodium were synthesized and characterized by several techniques, including elemental analysis (C, H and N), molar conductance measurements, infrared, Raman, 1H NMR, positron annihilation lifetime and thermogravimetric analysis. Reactions of barbital sodium (NaL) with salts of Pb(NO3)2, SnCl2ṡ2H2O, SbCl3 and BiCl3 affords four novel mononuclear complexes [Pb(HL)2], [Sn(L)(H2O)], [Sb(HL)(L)] and [Bi(HL)(L)]. In complexes of Pb(II), Sb(III) and Bi(III), the molar ratio of metal-to-ligand is 1:2. Both of Sb(III) and Bi(III) complexes have six coordination via two molecules of barbital (HL and L), one of them deprotonated NH. The Pb(II) complex has a central metal ion adopts tetradentate fashion which surrounded by two (HL) barbital moieties. The elemental analysis shows that Sn(II) complex is tetradentate 1:1 ratio, chelated through oxygen sbnd O of (ONa), deprotonated (sbnd NH) and one coordinated water molecule. The positron annihilation lifetime parameters were found to be dependent on the structure, electronic configuration and molecular weight of metal complexes.

  8. Effect of Sb composition on the conduction type and photoluminescence of heavily Sn-doped GaAs1-xSbx

    NASA Astrophysics Data System (ADS)

    Sasaki, T.; Jinbo, Y.; Uchitomi, N.

    2006-09-01

    Heavily Sn-doped GaAs1-xSbx epitaxial films were grown on SI-GaAs (001) substrates by solid source molecular beam epitaxy. A 5 nm-thick AlSb buffer layer was employed to relax the lattice mismatch between the epilayer and the substrate. X-ray diffraction (XRD), Hall effect measurements and photoluminescence measurements were performed to characterize the epitaxial films. The heavily Sn-doped GaAs1-xSbx / AlSb films with x 0.24 indicated n-type conduction while the epitaxial films with x 0.43 indicated p-type conduction.

  9. Electronic and Optical Properties of Ca3MN (M = Ge, Sn, Pb, P, As, Sb and Bi) Antiperovskite Compounds

    NASA Astrophysics Data System (ADS)

    Iqbal, Samad; Murtaza, G.; Khenata, R.; Mahmood, Asif; Yar, Abdullah; Muzammil, M.; Khan, Matiullah

    2016-08-01

    The electronic and optical properties of cubic antiperovskites Ca3MN (M = Ge, Sn, Pb, P, As, Sb and Bi) were investigated by applying the full potential linearized augmented plane wave plus local orbitals (FP-LAPW + lo) scheme based on density functional theory. Different exchange correlation potentials were adopted for the calculations. The results of band structure and density of states show that, by changing the central anion of Ca3MN, the nature of the materials change from metallic (Ca3GeN, Ca3SnN, Ca3PbN) to semiconducting with small band gaps (Ca3SbN and Ca3BiN) to insulating (Ca3PN and Ca3AsN). The optical properties such as dielectric function, absorption coefficient, optical conductivity, reflectivity and refractive indices have also been calculated. The results reveal that all the studied compounds are optically active in the visible and ultraviolet energy regions, and therefore can be effectively utilized for optoelectronic devices.

  10. High-performance Ti/Sb-SnO(2)/Pb(3)O(4) electrodes for chlorine evolution: preparation and characteristics.

    PubMed

    Shao, Dan; Yan, Wei; Cao, Lu; Li, Xiaoliang; Xu, Hao

    2014-02-28

    Chlorine evolution via electrochemical approach has wide application prospects in drinking water disinfection and wastewater treatment fields. Dimensional stable anodes used for chlorine evolution should have high stability and adequate chlorine evolution efficiency. Thus a novel and cost-effective Ti/Sb-SnO(2)/Pb(3)O(4)electrode was developed. The physicochemical and electrochemical properties as well as the chlorine evolution performances of the electrodes were investigated. The electrocatalytic activity and deactivation course of the electrodes were also explored. Results showed that this novel electrode had strong chlorine evolution ability with high current efficiency ranging from 87.3% to 93.4% depending on the operational conditions. The accelerated service life of Ti/Sb-SnO(2)/Pb(3)O(4) electrode could reach 180 h at a current density of 10,000 A m(-2) in 0.5 molL(-1) H(2)SO(4). During the electrolysis process, it was found that the conversion of Pb(3)O(4) into β-PbO(2) happened gradually on the electrode surface, which not only inhibited the leakage of hazardous Pb(2+) ion but also increased the anti-corrosion capacity of the electrode effectively.

  11. Rapid Microwave Preparation of Thermoelectric TiNiSn and TiCoSb Half-Heusler Compounds

    SciTech Connect

    Birkel, Christina S.; Zeier, Wolfgang G.; Douglas, Jason E.; Lettiere, Bethany R.; Mills, Carolyn E.; Seward, Gareth; Birkel, Alexander; Snedaker, Matthew L.; Zhang, Yichi; Snyder, G. Jeffrey; Pollock, Tresa M.; Seshadri, Ram; Stucky, Galen D.

    2012-10-25

    The 18-electron ternary intermetallic systems TiNiSn and TiCoSb are promising for applications as high-temperature thermoelectrics and comprise earth-abundant, and relatively nontoxic elements. Heusler and half-Heusler compounds are usually prepared by conventional solid state methods involving arc-melting and annealing at high temperatures for an extended period of time. Here, we report an energy-saving preparation route using a domestic microwave oven, reducing the reaction time significantly from more than a week to one minute. A microwave susceptor material rapidly heats the elemental starting materials inside an evacuated quartz tube resulting in near single phase compounds. The initial preparation is followed by a densification step involving hot-pressing, which reduces the amount of secondary phases, as verified by synchrotron X-ray diffraction, leading to the desired half-Heusler compounds, demonstrating that hot-pressing should be treated as part of the preparative process. For TiNiSn, high thermoelectric power factors of 2 mW/mK{sup 2} at temperatures in the 700 to 800 K range, and zT values of around 0.4 are found, with the microwave-prepared sample displaying somewhat superior properties to conventionally prepared half-Heuslers due to lower thermal conductivity. The TiCoSb sample shows a lower thermoelectric figure of merit when prepared using microwave methods because of a metallic second phase.

  12. Microstructural coarsening in Sn-Ag-based solders and its effects on mechanical properties

    NASA Astrophysics Data System (ADS)

    Dutta, I.; Kumar, P.; Subbarayan, G.

    2009-06-01

    Solders based on Sn-Ag alloys are susceptible to microstructural coarsening during storage or service, resulting in evolution of joint properties, and hence reliability, over time. Coarsening can occur during static aging, and even faster during thermo-mechanical cycling (TMC). The kinetics of coarsening may also depend on the scale of the joint. These effects lead to evolution of the mechanical properties of the joint over time, as well as spatial variations of property within the joint. Therefore, accurate prediction of joint properties during service or storage requires a quantitative understanding of coarsening under both isothermal and TMC conditions, and incorporating these in constitutive laws. This paper discusses the kinetics of coarsening in Sn-Ag based solders, and presents a rationale for joint-scale dependence of coarsening. The impact of coarsening on creep and fracture properties of joints under drop conditions are also presented.

  13. An 800-year record of atmospheric As, Mo, Sn, and Sb in central Asia in high-altitude ice cores from Mt. Qomolangma (Everest), Himalayas.

    PubMed

    Hong, Sungmin; Lee, Khanghyun; Hou, Shugui; Hur, Soon Do; Ren, Jiawen; Burn, Laurie J; Rosman, Kevin J R; Barbante, Carlo; Boutron, Claude F

    2009-11-01

    As, Mo, Sn, and Sb have been determined by inductively coupled plasma sector field mass spectrometry (ICP-SFMS) in 143 depth intervals of high-altitude ice cores from Mt. Everest, covering an 800-year time period from 1205 to 2002 AD. The results clearly demonstrate the long-term historical record of atmospheric transport and deposition of As, Mo, Sn, and Sb that has prevailed at high altitudes in the central Himalayas. Natural contributions, mainly from mineral dust, have dominated the atmospheric cycles of As, Mo, Sn, and to some extent Sb during the 700 years prior to the 20th century. Compared to those of the pre-1900 period, pronounced increases of both concentrations and crustal enrichment factors are observed since the 1970s, with the highest increase factor for Sn and the lowest for As. Such increases are attributed to anthropogenic emissions of these elements, largely from stationary fossil fuel combustion and nonferrous metals production, particularly in India. Our central Himalayan ice core record provides an explicit recognition of rising atmospheric As, Mo, Sn, and Sb pollution in response to rapid economic growth in central Asia.

  14. Amperometric biosensor of SnO2 thin film modified by Pd, In and Ag nanostructure synthesized by CSP method

    NASA Astrophysics Data System (ADS)

    Hassan, Marwa Abdul Muhsien; Hateef, Areej Adnan; Majeed, Aseel Mustafa Abdul; Al-Jabiry, Ali Jasim Mohammed; Jameel, Sabah; Hussian, Haidar Abdul Razaq Abdul

    2013-10-01

    Palladium, Indium and Silver-doped SnO2 thin film was deposited by chemical spray pyrolysis on ITO and porous silicon substrates to be a fast MgSO4·7H2O amperometric biosensor. The prepared SnO2 films were doped by dipping in palladium chloride PdCl2, indium chloride, InCl3 and silver nitrides AgNO3 dissolved in ethanol C2H5OH. The structural and optical properties of the prepared films were studied. The sensitivity behaviors of SnO2, SnO2: Pd, SnO2: In and SnO2: Ag based on the amperometric biosensor to MgSO4·7H2O salts were investigated at room temperature with different doping.

  15. Nanoindentation on SnAgCu lead-free solder joints and analysis

    NASA Astrophysics Data System (ADS)

    Xu, Luhua; Pang, John H. L.

    2006-12-01

    The lead-free SnAgCu (SAC) solder joint on copper pad with organic solderability preservative (Cu-OSP) and electroless nickel and immersion gold (ENIG) subjected to thermal testing leads to intermetallic growth. It causes corresponding reliability concerns at the interface. Nanoindentation characterization on SnAgCu solder alloy, intermetallic compounds (IMCs), and the substrates subjected to thermal aging is reported. The modulus and hardness of thin IMC layers were measured by nanoindentation continuous stiffness measurement (CSM) from planar IMC surface. When SAC/Ni(Au) solder joints were subject to thermal aging, the Young’s modulus of the NiCuSn IMC at the SAC/ENIG specimen changed from 207 GPa to 146 GPa with different aging times up to 500 h. The hardness decreased from 10.0 GPa to 7.3 GPa. For the SAC/Cu-OSP reaction couple, the Young’s modulus of Cu6Sn5 stayed constant at 97.0 GPa and hardness about 5.7 GPa. Electron-probe microanalysis (EPMA) was used to thermal aging. The creep effect on the measured result was analyzed when measuring SnAgCu solder; it was found that the indentation penetration, and thus the hardness, is loading rate dependent. With the proposed constant P/P experiment, a constant indentation strain rate h/h and hardness could be achieved. The log-log plot of indentation strain rate versus hardness for the data from the constant P/P experiments yields a slope of 7.52. With the optimized test method and CSM Technique, the Modulus of SAC387 solder alloy and all the layers in a solder joint were investigated.

  16. Fabrication of Sn-Ag/CeO2 Electro-Composite Solder by Pulse Electrodeposition

    NASA Astrophysics Data System (ADS)

    Sharma, Ashutosh; Bhattacharya, Sumit; Das, Siddhartha; Das, Karabi

    2013-12-01

    The Sn-Ag/CeO2 nanocomposite solders have been pulse electrodeposited from an aqueous citrate bath containing varying concentrations of CeO2 nanopowders (1 to 30 g/L). Microstructural characterization, hardness, melting point, electrical conductivity, wear resistance, and residual stress measurement of the composite coatings indicate that the composite deposited from an electrolyte containing 15 g/L CeO2 possesses the optimum properties and thus can have potential applications in solder joints and packaging.

  17. Soft chemical synthesis of Ag{sub 3}SbS{sub 3} with efficient and recyclable visible light photocatalytic properties

    SciTech Connect

    Gusain, Meenakshi; Rawat, Pooja; Nagarajan, Rajamani

    2014-12-15

    Highlights: • Highly crystalline Ag{sub 3}SbS{sub 3} synthesized using soft chemical approach. • First time report of photocatalytic activity of Ag{sub 3}SbS{sub 3}. • Ag{sub 3}SbS{sub 3} degraded the harmful organic dyes rapidly under visible radiation. • Pseudo first order kinetics have been followed in these sets of reactions. • Up to 90% of Methylene Blue degraded even after 4th cycle of catalyst reuse. • Structure of catalyst is intact after reuse. • As the catalyst is heavy, its separation after use is quite simple. - Abstract: Application of Ag{sub 3}SbS{sub 3}, obtained by soft chemical approach involving rapid reaction of air stable metal–thiourea complexes in ethylene glycol medium, as visible light photocatalyst for the degradation of dye solutions was investigated. Ag{sub 3}SbS{sub 3} was confirmed by high resolution powder X-ray diffraction pattern and its no defined morphology was present in SEM images. From UV–vis spectroscopy measurements, optical band gap of 1.77 eV was deduced for Ag{sub 3}SbS{sub 3}. Rapid degradation kinetics and recyclability was exhibited by Ag{sub 3}SbS{sub 3} towards Methylene Blue, Methyl Orange, Malachite Green, and Rhodamine 6G dye solutions under visible radiation. All these processes followed pseudo first order kinetics. High surface area (6.39 m{sup 2}/g), with mesopores (3.81 nm), arising from solvent mediated synthesis of Ag{sub 3}SbS{sub 3} has been correlated to its catalytic activity.

  18. Evaluation of the amalgamation reaction of experimental Ag-Sn-Cu alloys containing Pd using a mercury plating technique.

    PubMed

    Koike, Marie; Ferracane, Jack L; Fujii, Hiroyuki; Okabe, Toru

    2003-09-01

    A mercury plating technique was used to determine the phases forming on experimental Ag-Sn-Cu alloy powders (with and without Pd) exposed to electrolytically deposited mercury. Four series of alloy powders were made: a) 1.5% Pd with 10-14% Cu (CU series); b) 1.0% Pd with 10-14% Cu (1PD series); c) 1.5% Pd with different ratios of Ag3Sn (gamma) to Ag4Sn (beta) with 12% Cu (AGSN series); and d) 9-13% Cu with no Pd (NOPD series). Each powder was pressed on a freshly prepared amalgam specimen made from the same powder and metallographically polished until cross sections appeared; mercury was electroplated on the alloy particles. Alloy powders, amalgams and electroplated specimens were examined using XRD and SEM/EDS. XRD confirmed the presence of gamma2 in amalgams made from alloys with Cu < 13% or with Ag3Sn/Ag4Sn > 0.8. Specimens with moderately plated Hg showed gamma1 (Ag2Hg3) polyhedra and eta' Cu6Sn5, but not gamma2. This method effectively identifies alloys prone to forming gamma2.

  19. Revealing Extremely Low Energy Amplitude Modes in the Charge-Density-Wave Compound LaAgSb2

    NASA Astrophysics Data System (ADS)

    Chen, R. Y.; Zhang, S. J.; Zhang, M. Y.; Dong, T.; Wang, N. L.

    2017-03-01

    Using infrared spectroscopy and ultrafast pump probe measurement, we have studied the two charge-density-wave (CDW) instabilities in the layered compound LaAgSb2 . The development of CDW energy gaps was clearly observed by optical spectroscopy, which removed most of the free carrier spectral weight. More interestingly, our time-resolved measurements revealed two coherent oscillations that softened by approaching the two phase transition temperatures, respectively. We addressed that these two oscillations come from the amplitude modes of CDW collective excitations, the surprisingly low energies (0.12 THz and 0.34 THz for the higher and lower temperature ones, respectively) of which are associated with the extremely small nesting wave vectors. Additionally, the amplitude and relaxation time of photoinduced reflectivity of LaAgSb2 single crystals stayed unchanged across the CDW phase transitions, which is quite rare and deserves further investigation.

  20. Microstructural and Hardness Evaluations of a Centrifuged Sn-22Pb Casting Alloy Compared with a Lead-Free SnAg Alloy

    NASA Astrophysics Data System (ADS)

    Satizabal, Luz Myrian; Costa, Diego; Hainick, Guilherme Ottamr; Moura, Diego Rodrigo; Bortolozo, Ausdinir Danilo; Osório, Wislei Riuper

    2017-01-01

    A great preoccupation with replacing the traditional Sn-Pb alloy with a Pb-free alloy ("green alloy") is recognized. There are industrial sectors that demand metallurgical improvements to attain certain unsoundness and adequate properties as a function of imposed operational parameters. In this experimental investigation, two distinctive centrifuged casting alloys (i.e., Sn-2 wt pct Ag and Sn-22 wt pct Pb) are compared. It is found that centrifuged castings have similar microstructure constituents, although distinctive cooling rates and solute contents are considered. It is also found that Ag3Sn intermetallic particles are responsible for attaining similar tensile strength, since more dislocations between Ag3Sn particles and the Sn-rich phase are provided. In order to replace the Sn-Pb alloys with a successor alloy containing sustainability and environmental aspects associated with castability and to guarantee the desired properties, it seems that a green alloy (Pb free) with intermetallic particles finely and homogeneously distributed provides an interesting benefit to various industrial applications.

  1. Microstructural and Hardness Evaluations of a Centrifuged Sn-22Pb Casting Alloy Compared with a Lead-Free SnAg Alloy

    NASA Astrophysics Data System (ADS)

    Satizabal, Luz Myrian; Costa, Diego; Hainick, Guilherme Ottamr; Moura, Diego Rodrigo; Bortolozo, Ausdinir Danilo; Osório, Wislei Riuper

    2017-04-01

    A great preoccupation with replacing the traditional Sn-Pb alloy with a Pb-free alloy ("green alloy") is recognized. There are industrial sectors that demand metallurgical improvements to attain certain unsoundness and adequate properties as a function of imposed operational parameters. In this experimental investigation, two distinctive centrifuged casting alloys ( i.e., Sn-2 wt pct Ag and Sn-22 wt pct Pb) are compared. It is found that centrifuged castings have similar microstructure constituents, although distinctive cooling rates and solute contents are considered. It is also found that Ag3Sn intermetallic particles are responsible for attaining similar tensile strength, since more dislocations between Ag3Sn particles and the Sn-rich phase are provided. In order to replace the Sn-Pb alloys with a successor alloy containing sustainability and environmental aspects associated with castability and to guarantee the desired properties, it seems that a green alloy (Pb free) with intermetallic particles finely and homogeneously distributed provides an interesting benefit to various industrial applications.

  2. Development of a new Pb-free solder: Sn-Ag-Cu

    SciTech Connect

    Miller, Chad M.

    1995-02-10

    With the ever increasing awareness of the toxicity of Pb, significant pressure has been put on the electronics industry to get the Pb out of solder. This work pertains to the development and characterization of an alloy which is Pb-free, yet retains the proven positive qualities of current Sn-Pb solders while enhancing the shortcomings of Sn-Pb solder. The solder studied is the Sn-4.7Ag-1.7Cu wt% alloy. By utilizing a variety of experimental techniques the alloy was characterized. The alloy has a melting temperature of 217°C and exhibits eutectic melting behavior. The solder was examined by subjecting to different annealing schedules and examining the microstructural stability. The effect of cooling rate on the microstructure of the solder was also examined. Overall, this solder alloy shows great promise as a viable alternative to Pb-bearing solders and, as such, an application for a patent has been filed.

  3. First principle study of structural, electronic and magnetic properties of half-Heusler IrCrZ (Z=Ge, As, sn and sb) compounds

    NASA Astrophysics Data System (ADS)

    Allaf Behbahani, Marzieh; Moradi, Mahmood; Rostami, Mohammad; Davatolhagh, Saeed

    2016-05-01

    First-principle calculations based on the density functional theory for new half-Heusler IrCrZ (Z=Ge, As, Sn and Sb) alloys are performed. It is found that the half-Heusler IrCrGe and IrCrSn compounds have an antiferromagnetic ground state while the ferromagnetic state is more stable than the antiferromagnetic and non-magnetic states for both IrCrAs and IrCrSb compounds. IrCrAs and IrCrSb exhibit half-metallic property with integer magnetic moments of 2.00 μB per formula unit and half-metallic gaps of 0.28 and 0.27 eV at their equilibrium volume, respectively. In addition, the density of states (DOSs) and band structures of IrCrAs and IrCrSb compounds are studied and the origin of their half-metallic gaps are discussed in detail. The estimation of Curie temperatures of IrCrAs and IrCrSb compounds is performed within the mean field approximation (MFA). The Curie temperatures of IrCrAs and IrCrSb are estimated to be 1083 and 1470 K, respectively. The stability of the half-metallicity in IrCrAs and IrCrSb compounds with the variation of lattice constant are also investigated.

  4. Reliability of Sn-3.5Ag Solder Joints in High Temperature Packaging Applications

    SciTech Connect

    Muralidharan, Govindarajan; Kurumaddali, Nalini Kanth; Kercher, Andrew K; Leslie, Dr Scott

    2010-01-01

    There is a significant need for next generation, high performance power electronic packages and systems with wide band gap devices to operate at high temperatures in automotive and electricity transmission applications. Sn-3.5Ag solder is a candidate for use in such packages with potential operating temperatures up to 200oC. However, there is a need to understand thermal cycling reliability of Sn-3.5Ag solders subject to such operating conditions. The results of a study on the damage evolution occurring in large area Sn-3.5Ag solders joints between silicon dies and DBC substrates subject to thermal cycling between 200oC and 5oC is presented in this paper. Damage accumulation was followed using high resolution X-ray radiography techniques while nonlinear finite element models were developed based on the mechanical property data available in literature to understand the relationship between the stress state within the solder joint and the damage evolution occurring under thermal cycling conditions. It was observed that regions of damage observed in the experiments do not correspond to the finite element predictions of the location of regions of maximum plastic work.

  5. Thermoelectric Inhomogeneities in (Ag(sub 1-y)SbTe2)(sub x)(PbTe)(sub 1-x)

    NASA Technical Reports Server (NTRS)

    Snyder, G. Jeffrey; Chen, Nancy; Gascoin, Franck; Mueller, Eckhard; Karpinski, Gabriele; Stiewe, Christian

    2006-01-01

    A document presents a study of why materials of composition (Ag1 ySbTe2)0.05 (PbTe)0.95 [0< or = y < or = 1] were previously reported to have values of the thermoelectric figure of merit [ZT (where Z = alpha(sup 2)/rk, alpha is the Seebeck coefficient, r is electrical resistivity, k is thermal conductivity, and T is absolute temperature)] ranging from <1 to >2. In the study, samples of (AgSbTe2)0.05(PbTe)0.95, (Ag0.67SbTe2)0.05 (PbTe)0.95, and (Ag0.55SbTe2)0.05(PbTe)0.95 were prepared by melting followed, variously, by slow or rapid cooling. Analyses of these samples by x-ray diffraction, electron microscopy, and scanning-microprobe measurements of the Seebeck coefficient led to the conclusion that these materials have a multiphase character on a scale of the order of millimeters, even though they appear homogeneous in x-ray diffraction and electron microscopy. The Seebeck measurements showed significant variations, including both n-type and p-type behavior in the same sample. These variations were found to be consistent with observed variations of ZT. The rapidly quenched samples were found to be less inhomogeneous than were the furnace-cooled ones; hence, rapid quenching was suggested as a basis of research on synthesizing more nearly uniform high-ZT samples.

  6. Ag-Sn Bimetallic Catalyst with a Core-Shell Structure for CO2 Reduction.

    PubMed

    Luc, Wesley; Collins, Charles; Wang, Siwen; Xin, Hongliang; He, Kai; Kang, Yijin; Jiao, Feng

    2017-02-08

    Converting greenhouse gas carbon dioxide (CO2) to value-added chemicals is an appealing approach to tackle CO2 emission challenges. The chemical transformation of CO2 requires suitable catalysts that can lower the activation energy barrier, thus minimizing the energy penalty associated with the CO2 reduction reaction. First-row transition metals are potential candidates as catalysts for electrochemical CO2 reduction; however, their high oxygen affinity makes them easy to be oxidized, which could, in turn, strongly affect the catalytic properties of metal-based catalysts. In this work, we propose a strategy to synthesize Ag-Sn electrocatalysts with a core-shell nanostructure that contains a bimetallic core responsible for high electronic conductivity and an ultrathin partially oxidized shell for catalytic CO2 conversion. This concept was demonstrated by a series of Ag-Sn bimetallic electrocatalysts. At an optimal SnOx shell thickness of ∼1.7 nm, the catalyst exhibited a high formate Faradaic efficiency of ∼80% and a formate partial current density of ∼16 mA cm(-2) at -0.8 V vs RHE, a remarkable performance in comparison to state-of-the-art formate-selective CO2 reduction catalysts. Density-functional theory calculations showed that oxygen vacancies on the SnO (101) surface are stable at highly negative potentials and crucial for CO2 activation. In addition, the adsorption energy of CO2(-) at these oxygen-vacant sites can be used as the descriptor for catalytic performance because of its linear correlation to OCHO* and COOH*, two critical intermediates for the HCOOH and CO formation pathways, respectively. The volcano-like relationship between catalytic activity toward formate as a function of the bulk Sn concentration arises from the competing effects of favorable stabilization of OCHO* by lattice expansion and the electron conductivity loss due to the increased thickness of the SnOx layer.

  7. Reflow soldering and isothermal solid-state aging of Sn-Ag eutectic solder on Au/Ni surface finish

    NASA Astrophysics Data System (ADS)

    Liu, C. M.; Ho, C. E.; Chen, W. T.; Kao, C. R.

    2001-09-01

    The reaction between the eutectic Sn-3.5Ag solder and the Au/Ni surface finish during reflow as well as during isothermal aging was studied. The Au layer was electroplated and had a thickness of the one μm. The peak reflow temperature was fixed at 250 C while the reflow time was varied between 10 sec and one h. Samples that went through 90 sec reflow time were then subjected to 160 C isothermal aging for up to 875 h. It was found that during reflow the Au layer reacted very quickly with the solder to form AuSn4. One μm of Au layer was consumed in less than 10 sec. As the aging time increased, AuSn4 grains began to separate themselves from the Ni layer at the roots of the grains and started to fall into the solder. When, the reflow time reached 30 sec, all the Au intermetallic head left the interface, and Ni3Sn4 started, to form at the interface. The Ni3Sn4 growth rate followed linear kinetics initially (<240 sec), but the growth rate slowed down afterward. During the isothermal aging, only a small amount of (AuxNi1-x)Sn4 resettled back to the interface, and a continuous (Au0.45Ni0.55)Sn4 layer did not form at the interface, unlike the case for the Sn-37Pb solder. This is an important advantage for Sn-3.5 Ag over Sn-37Pb because a continuous (Au0.45Ni0.55)Sn4 layer inevitably will weaken a solder joint. Our observation indicated that many (AuxNi1-x)Sn4 particles were trapped by the Ag3Sn particles, and were hindered from resettling back to the interface.

  8. Influence of SnO2 Nanoparticles Addition on Microstructure, Thermal Analysis, and Interfacial IMC Growth of Sn1.0Ag0.7Cu Solder

    NASA Astrophysics Data System (ADS)

    Sun, Ren; Sui, Yanwei; Qi, Jiqiu; Wei, Fuxiang; He, Yezeng; Chen, Xiao; Meng, Qingkun; Sun, Zhi

    2017-02-01

    A new lead-free Sn-1.0Ag-0.7Cu-xSnO2 composite solder was smelted in a vacuum arc furnace at 900°C for 30 min. This paper investigated the influence of SnO2 nanoparticles on the microstructure, melting properties and growth of interfacial intermetallic compounds (IMCs) at the interface between Cu and the composite solder during isothermal aging. The results indicated that SnO2 particles effectively refined the β-Sn grains and reduced the size of Cu6Sn5. The thermal analysis data showed that nano-sized SnO2 decreased the pasty range and melting temperature. In addition, the additional nanoparticles reduced the diffusion coefficient and impeded the growth of intermetallic compounds during soldering and aging. The effect of nanoparticles on solder is closely associated with the added amount of nano-SnO2 particles. When the SnO2 concentration was 1.0 wt.%, the composite solder possessed an excellent microstructure, suitable melting properties and obvious inhibition effect on the interfacial IMCs. However, excessive addition of SnO2 particles in the solder alloys decreased the inhibition effect of the interfacial IMCs.

  9. Effects of Ge replacement in GeTe by Ag or Sb on the Seebeck coefficient and carrier concentration modified by local electron imbalance

    NASA Astrophysics Data System (ADS)

    Levin, E. M.; Howard, A.; Straszheim, W. E.

    2015-03-01

    XRD, SEM, EDS, 125Te NMR, Seebeck coefficient, and electrical resistivity of AgxGe50-xTe50 and SbxGe50-xTe50 alloys have been studied. Replacement of Ge in GeTe by Sb significantly increases the Seebeck coefficient, while replacement by Ag decreases it. These effects can be attributed to a change in carrier concentration observed via 125Te NMR spin-lattice relaxation measurements and NMR signal position, which mostly depends on the Knight shift. Variation in carrier concentration in AgxGe50-xTe50 and SbxGe50-xTe50 can be attributed to different electron configurations of valence electrons of Ag (4d105s1) and Sb (5s25p3) compared to that of Ge (4s24p2) resulting in local electron imbalances and changing the concentration of charge carrier (holes) generated by Ge vacancies. In contrast, our 125Te NMR and Seebeck coefficient data for Ag2Sb2Ge46Te50 are similar to those observed for GeTe. This shows that effects from Ag and Sb compensate each other and indicates the existence of [Ag +Sb] pairs. The effects of Ge replacement in GeTe by Ag, Sb, or [Ag +Sb] on rhombohedral lattice distortion also have been analyzed. Interplay between the Seebeck coefficient and electrical resistivity in these alloys results in variation of power factor; the value of 45 mW/cm K2, the highest among known tellurides, was found for Sb2Ge48Te50.

  10. Electromigration induced Kirkendall void growth in Sn-3.5Ag/Cu solder joints

    SciTech Connect

    Jung, Yong; Yu, Jin

    2014-02-28

    Effects of electric current flow on the Kirkendall void formation at solder joints were investigated using Sn-3.5Ag/Cu joints specially designed to have localized nucleation of Kirkendall voids at the Cu{sub 3}Sn/Cu interface. Under the current density of 1 × 10{sup 4} A/cm{sup 2}, kinetics of Kirkendall void growth and intermetallic compound thickening were affected by the electromigration (EM), and both showed the polarity effect. Cu{sub 6}Sn{sub 5} showed a strong susceptibility to the polarity effect, while Cu{sub 3}Sn did not. The electromigration force induced additional tensile (or compressive) stress at the cathode (or anode), which accelerated (or decelerated) the void growth. From the measurements of the fraction of void at the Cu{sub 3}Sn/Cu interface on SEM micrographs and analysis of the kinetics of void growth, the magnitude of the local stress induced by EM was estimated to be 9 MPa at the anode and −7 MPa at the cathode.

  11. Synthesis and thermal behavior of tin-based alloy (Sn-Ag-Cu) nanoparticles.

    PubMed

    Roshanghias, Ali; Yakymovych, Andriy; Bernardi, Johannes; Ipser, Herbert

    2015-03-19

    The prominent melting point depression of nanoparticles has been the subject of a considerable amount of research. For their promising applications in electronics, tin-based nano-alloys such as near-eutectic Sn-Ag-Cu (SAC) alloys have been synthesized via various techniques. However, due to issues such as particle aggregation and oxidation or introduced impurities, the application of these nano-size particles has been confined or aborted. For instance, thermal investigations by DTA/DSC in a large number of studies revealed exothermic peaks in the range of 240-500 °C, i.e. above the melting point of SAC nanoparticles, with different and quite controversial explanations for this unclear phenomenon. This represents a considerable drawback for the application of nanoparticles. Correspondingly, in the current study, the thermal stability of SAC nanoparticles has been investigated via electron microscopy, XRD, FTIR, and DSC/TG analysis. It was found that the nanoparticles consist mainly of a metallic β-Sn core and an amorphous tin hydroxide shell structure. The SnO crystalline phase formation from this amorphous shell has been associated with the exothermic peaks on the first heating cycle of the nanoparticles, followed by a disproportionation reaction into metallic Sn and SnO₂.The results also revealed that the surfactant and reducing agent cannot only affect the size and size distribution of the nanoparticles, they might also alter the ratio between the amorphous shell and the crystalline core in the structure of particles.

  12. Preparation and characterization of silver substrates coated with antimony-doped SnO2 thin films for surface plasmon resonance studies.

    PubMed

    Manesse, Maël; Sanjines, Rosendo; Stambouli, Valerie; Jorel, Corentin; Pelissier, Bernard; Pisarek, Marcin; Boukherroub, Rabah; Szunerits, Sabine

    2009-07-21

    This paper reports on the preparation of silver/antimony-doped tin oxide (Ag/SnO(2):Sb) hybrid interfaces using magnetron sputtering and their characterization. The influence of the Sn target composition (doping with 2 or 5% Sb) on the electrochemical and electrical characteristics of the hybrid interface was investigated using X-ray photoelectron spectroscopy (XPS), sheet resistance measurements, cyclic voltammetry, scanning tunneling microscopy (STM) and surface plasmon resonance (SPR). The best interface in terms of electrical conductivity and SPR signal is a hybrid interface with a 8.5 +/- 0.3 nm thick SnO(2):Sb layer obtained from a Sn target with 2% Sb deposited on 38 nm thick silver film. Different strategies to link functional groups onto the Ag/SnO(2):Sb interface are also presented.

  13. Theoretical investigation of Sn-doped Ge{sub 2}Sb{sub 2}Te{sub 5} alloy in crystalline phase

    SciTech Connect

    Singh, Janpreet; Tripathi, S. K.; Singh, Gurinder; Kaura, Aman

    2015-06-24

    Ge{sub 2}Sb{sub 2}Te{sub 5} (GST) is technologically important for phase-change random access memory applications. It has been shown that the 2.2 atomic % doping of Sn weakens the Ge–Te bond strength while maintaining the symmetry of stable phase of GST. The influence of Sn doping upon the phase change characteristics of the crystalline GST alloy has been investigated by ab initio calculations. The lattice parameter, average interface distances between two adjacent (111) layers, equilibrium volume, metallic character and electrical resistance has been calculated for the stable phase of GST and Sn-doped GST.

  14. Solid-state growth kinetics of Ni{sub 3}Sn{sub 4} at the Sn-3.5Ag solder/Ni interface

    SciTech Connect

    Alam, M.O.; Chan, Y.C.

    2005-12-15

    Systematic experimental work was carried out to understand the growth kinetics of Ni{sub 3}Sn{sub 4} at the Sn-3.5Ag solder/Ni interface. Sn-3.5%Ag solder was reflowed over Ni metallization at 240 deg. C for 0.5 min and solid-state aging was carried out at 150-200 deg. C, for different times ranging from 0 to 400 h. Cross-sectional studies of interfaces have been conducted by scanning electron microscopy and energy dispersive x ray. The growth exponent n for Ni{sub 3}Sn{sub 4} was found to be about 0.5, which indicates that it grows by a diffusion-controlled process even at a very high temperature near to the melting point of the SnAg solder. The activation energy for the growth of Ni{sub 3}Sn{sub 4} was determined to be 16 kJ/mol.

  15. Microstructure analyses and thermoelectric properties of Ag{sub 1-x}Pb{sub 18}Sb{sub 1+y}Te{sub 20}

    SciTech Connect

    Perlt, S.; Hoeche, Th.; Dadda, J.; Mueller, E.; Bauer Pereira, P.; Hermann, R.; Sarahan, M.; Pippel, E.; Brydson, R.

    2012-09-15

    This study reports microstructural investigations of long-term annealed Ag{sub 1-x}Pb{sub m}Sb{sub 1+y}Te{sub 2+m} (m=18, x=y=0, hereinafter referred to as AgPb{sub 18}SbTe{sub 20}) (Lead-Antimony-Silver-Tellurium, LAST-18) as well as of Ag{sub 1-x}Pb{sub 18}Sb{sub 1+y}Te{sub 20}, i.e. Ag-deficient and Sb-excess LAST-18 (x{ne}0,y{ne}0), respectively. Two different length scales are explored. The micrometer scale was evaluated by SEM to analyze the volume fraction and the number of secondary phases as well as the impact of processing parameters on the homogeneity of bulk samples. For AgPb{sub 18}SbTe{sub 20}, site-specific FIB liftout of TEM lamellae from thermoelectrically characterized samples was accomplished to investigate the structure on the nanometer scale. High-resolution TEM and energy-filtered TEM were performed to reveal shape and size distribution of nanoprecipitates, respectively. A hypothesis concerning the structure-property relationship is set out within the frame of a gradient annealing experiment. This study is completed by results dealing with inhomogeneities on the micrometer scale of Ag{sub 1-x}Pb{sub 18}Sb{sub 1+y}Te{sub 20} and its electronic properties. Highlights: Black-Right-Pointing-Pointer SEM and TEM microstructure investigation of long-term annealed AgPb{sub 18}SbTe{sub 20}. Black-Right-Pointing-Pointer SEM and thermoelectric studies on Ag{sub 1-x}Pb{sub 18}Sb{sub 1+y}Te{sub 20}. Black-Right-Pointing-Pointer Discussion concerning structure-property relationship in long-term annealed AgPb{sub 18}SbTe{sub 20}. Black-Right-Pointing-Pointer Correlation between Ag{sub 1-x}Pb{sub 18}Sb{sub 1+y}Te{sub 20} microscale structure and electronic properties.

  16. Photo-enhanced salt-water splitting using orthorhombic Ag8SnS6 photoelectrodes in photoelectrochemical cells

    NASA Astrophysics Data System (ADS)

    Cheng, Kong-Wei; Tsai, Wei-Tseng; Wu, Yu-Hsuan

    2016-06-01

    Orthorhombic Ag8SnS6 photoelectrodes are prepared on various substrates via reactive sulfurization using the radio-frequency magnetron sputtering of silver-tin metal precursors. Evaluations of the photoelectrochemical performances of Ag8SnS6 photoelectrodes with various levels of silver content are carried out in various aqueous solutions. X-ray diffraction patterns and Hall measurements of samples after a three-stage sulfurization process show that all samples are the pure orthorhombic Ag8SnS6 phase with n-type conductivity. The energy band gaps, carrier concentrations, and mobilities of samples on glass substrates are 1.31-1.33 eV, 7.07 × 1011-8.52 × 1012 cm-3, and 74.9-368 cm2 V-1 s-1, respectively, depending on the [Ag]/[Ag+Sn] molar ratio in samples. The highest photoelectrochemical performances of orthorhombic Ag8SnS6 photoelectrodes in aqueous 0.35 M Na2S + 0.25 M K2SO3 and 0.5 M NaCl solutions are respectively 2.09 and 2.5 mA cm-2 at an applied voltages of 0.9 and 1.23 V vs. a reversible hydrogen electrode under light irradiation with a light intensity of 100 mW cm-2 from a 300-W Xe lamp.

  17. Stabilization of Kondo Semiconductor State by Sb Doping of CeNi1-σSn1+σ and the General Criterion of Its Appearance

    NASA Astrophysics Data System (ADS)

    Spałek, J.; Ślebarski, A.

    2008-07-01

    Semimetallic off-stoichiometric CeNi1-δSn1+δ-xSbx system with δ≈0.06 is shown to transform into a Kondo semiconductor upon the substitution of few percent of Sb for Sn. The full-gap formation is associated with f-electron localization induced by the combined effect of the collective Kondo-singlet formation and the atomic disorder. Namely, the extra valence electrons introduced with the Sb doping (one per Sb atom) contribute additionally to the formation of the collective Kondo spin-singlet state at low temperatures, as seen by a substantial reduction of the magnetic susceptibility. The precise general definition of the Kondo semiconductor is provided and the difference with either the simple band or the Mott-Hubbard insulators is stressed.

  18. Mechanical properties and microstructure investigation of Sn-Ag-Cu lead free solder for electronic package applications

    NASA Astrophysics Data System (ADS)

    Wang, Qing

    While the electronics industry appears to be focusing on Sn-Ag-Cu as the alloy of choice for lead free electronics assembly, the exact composition varies by geographic region, supplier and user. Add to that dissolved copper and silver from the printed circuit board traces and surface finish, and there can be significant variation in the final solder joint composition. A systematic study of the mechanical and microstructural properties of Sn-Ag-Cu alloys with Ag varying from 2wt% to 4wt% and Cu varying from 0.5wt% to 1.5wt%, was investigated in this research study. Different sample preparation techniques (water quenched, oil quenched and water quenched followed by reflow) were explored and the resulting microstructure compared to that of a typical reflowed lead free chip scale package (CSP) solder joint. Tensile properties such as tensile strength, 0.2% yield strength and the ultimate tensile strength and creep behavior of selected alloy compositions (Sn-4Ag-1.5Cu, Sn-4Ag-0.5Cu, Sn-2Ag-1.5Cu, Sn-2Ag-0.5Cu, Sn-3.5Ag-0.8Cu) were performed for three conditions: as-cast; aged for 100 hours at 125°C; and aged for 250 hours at 125°C. The microstructures of these alloys were examined using light and scanning electron microscopy (LM and SEM) respectively and SEM based energy dispersive x-ray spectroscopy (EDS). Fracture surface and cross-section analysis were performed on the specimens after creep testing. The creep testing results and the effect of high temperature aging on mechanical properties will also be presented for the oil quenched samples. A hyperbolic-sine creep model was adopted and used to fit the creep experiment data. The effect of adding the quaternary element bismuth to the Sn-3.5Ag-0.8Cu alloy on the mechanical properties was measured and compared with the mechanical properties of the ternary alloys. The results of this research study provide necessary data for the modeling of solder joint reliability for a range of Sn-Ag-Cu compositions and a baseline

  19. Sn-Ag-Cu nanosolders: Melting behavior and phase diagram prediction in the Sn-rich corner of the ternary system.

    PubMed

    Roshanghias, Ali; Vrestal, Jan; Yakymovych, Andriy; Richter, Klaus W; Ipser, Herbert

    2015-06-01

    Melting temperatures of Sn-Ag-Cu (SAC) alloys in the Sn-rich corner are of interest for lead-free soldering. At the same time, nanoparticle solders with depressed melting temperatures close to the Sn-Pb eutectic temperature have received increasing attention. Recently, the phase stability of nanoparticles has been the subject of plenty of theoretical and empirical investigations. In the present study, SAC nanoparticles of various sizes have been synthesized via chemical reduction and the size dependent melting point depression of these particles has been specified experimentally. The liquidus projection in the Sn-rich corner of the ternary SAC system has also been calculated as a function of particle size, based on the CALPHAD-approach. The calculated melting temperatures were compared with those obtained experimentally and with values reported in the literature, which revealed good agreement. The model also predicts that with decreasing particle size, the eutectic composition shifts towards the Sn-rich corner.

  20. Effects of Ge and Sn substitution on the metal-semiconductor transition and thermoelectric properties of Cu12Sb4S13 tetrahedrite.

    PubMed

    Kosaka, Yasufumi; Suekuni, Koichiro; Hashikuni, Katsuaki; Bouyrie, Yohan; Ohta, Michihiro; Takabatake, Toshiro

    2017-03-15

    The synthetic tetrahedrites Cu12-yTrySb4S13 (Tr: Mn, Fe, Co, Ni, Zn) have been extensively studied due to interest in metal-semiconductor transition as well as in superior thermoelectric performance. We have prepared Ge- and Sn-bearing tetrahedrites, Cu12-xMxSb4S13 (M = Ge, Sn; x ≤ 0.6), and investigated the effects of the substitutions on the phase transition and the thermoelectric properties. The substitutions of Ge and Sn for Cu suppress the metal-semiconductor transition and increase the electrical resistivity ρ and the positive thermopower S. This finding suggests that the phase transition is prevented by electron doping into the unoccupied states of the valence band. The variations of ρ, S, and magnetic susceptibility for the present systems correspond well with those for the system with Tr = Zn(2+), confirming the tetravalent states for Ge and Sn. The substitution of M(4+) for Cu(1+) decreases the power factor S(2)/ρ but enhances the dimensionless thermoelectric figure of merit ZT, due to reductions in both the charge carrier contribution and lattice contribution to the thermal conductivity. As a result, ZT has a maximum value of ∼0.65 at 665 K for x = 0.3-0.5 in Cu12-xMxSb4S13 with M = Ge and Sn.

  1. Solid Liquid Interdiffusion Bonding of Zn4Sb3 Thermoelectric Material with Cu Electrode

    NASA Astrophysics Data System (ADS)

    Lin, Y. C.; Lee, K. T.; Hwang, J. D.; Chu, H. S.; Hsu, C. C.; Chen, S. C.; Chuang, T. H.

    2016-10-01

    The ZnSb intermetallic compound may have thermoelectric applications because it is low in cost and environmentally friendly. In this study, a Zn4Sb3 thermoelectric element coated with a Ni barrier layer and a Ag reaction layer was bonded with a Ag-coated Cu electrode using a Ag/Sn/Ag solid-liquid interdiffusion bonding process. The results indicated that a Ni5Zn21 intermetallic phase formed easily at the Zn4Sb3/Ni interface, leading to sound adhesion. In addition, Sn film was found to react completely with the Ag layer to form a Ag3Sn intermetallic layer having a melting point of 480°C. The resulting Zn4Sb3 thermoelectric module can be applied at the optimized operation temperature (400°C) of Zn4Sb3 material as a thermoelectric element. The bonding strengths ranged from 14.9 MPa to 25.0 MPa, and shear tests revealed that the Zn4Sb3/Cu-joints fractured through the interior of the thermoelectric elements.

  2. Structural analysis of quaternary Se{sub 85−x}Sb{sub 10}In{sub 5}Ag{sub x} bulk glassy alloys

    SciTech Connect

    Sharma, Rita Sharma, Shaveta; Kumar, Praveen; Chander, Ravi; Thangaraj, R.; Mian, M.

    2015-08-28

    The physical properties of chalcogenide semiconductor have attracted much attention recently due to their applications in optical recording media and inorganic resist due to photo induced structural transformations observed in these materials. The bulk samples of Se{sub 85-x}Sb{sub 10}In{sub 5}Ag{sub x} system are prepared by melt-quenching technique. X-ray diffraction technique and RAMAN spectroscopy have been used to study the role of Ag additive on the amorphous/crystalline nature and molecular structure of Se{sub 85}Sb{sub 10}In{sub 5} glassy alloys. The phases Sb{sub 2}Se{sub 3}, In-Sb and In{sub 2}Se{sub 3} has been observed by X-ray diffraction. The formation of AgInSe{sub 2} phase along with the enhancement in intensity has been observed with the Ag addition.Three bands observed by raman spectroscopy for Se85Sb10In5 are at 70 cm-1, 212cm-1 and 252cm-1. The formation of small bands up to wavenumber 188cm{sup -1} and shifting in second band along with the increase in intensity up to sample x=5 has been observed with the Ag addition. The enhancement in intensity in third band with Ag content has been observed.

  3. Creep deformation behavior in eutectic Sn-Ag solder joints using a novel mapping technique

    SciTech Connect

    Lucas, J.P.; Guo, F.; McDougall, J.; Bieler, T.R.; Subramanian, K.N.; Park, J.K.

    1999-11-01

    Creep deformation behavior was measured for 60--100 {micro}m thick solder joints. The solder joints investigated consisted of: (1) non-composite solder joints made with eutectic Sn-Ag solder, and (2) composite solder joints with eutectic Sn-Ag solder containing 20 vol.%, 5 {micro}m diameter in-situ Cu{sub 6}Sn{sub 5} intermetallic reinforcements. All creep testing in this study was carried out at room temperature. Qualitative and quantitative assessment of creep deformation was characterized on the solder joints. Creep deformation was analyzed using a novel mapping technique where a geometrical-regular line pattern was etched over the entire solder joint using excimer laser ablation. During creep, the laser-ablation (LA) pattern becomes distorted due to deformation in the solder joint. By imaging the distortion of laser-ablation patterns using the SEM, actual deformation mapping for the entire solder joint is revealed. The technique involves sequential optical/digital imaging of the deformation versus time history during creep. By tracing and recording the deformation of the LA patterns on the solder over intervals of time, local creep data are obtained in many locations in the joint. This analysis enables global and localized creep shear strains and strain rate to be determined.

  4. Li6La3SnMO12 (M = Sb, Nb, Ta), a Family of Lithium Garnets with High Li-Ion Conductivity

    SciTech Connect

    Bridges, Craig A; Goodenough, J. B.; Gupta, Dr Asha; Nakanishi, Masahiro; Paranthaman, Mariappan Parans; Sokolov, Alexei P; Bi, Zhonghe; Li, Yutao; Han, Jiantao; Dong, Youzhong; Wang, Long; Xu, Maowen

    2012-01-01

    In order to investigate the influence of covalent bonding within the garnet framework on the conductivity of Li+ in the interstitial space, the Li+ conductivities in the family of Sn-based compounds Li6La3 SnMO12 (M = Sb, Nb, Ta) have been obtained and are compared with those of Li6La3ZrMO12. Refinement of the neutron diffraction pattern of Li6La3 SnNbO12shows that the interstitial tetrahedral sites (24d ) are about half-occupied and most of the Li in the interstitial bridging octahedral sites are displaced from the center position (48g ). The Sb-based compound has the largest lattice parameter while the Ta-based compound has the highest Li+-ion conductivity of 0.42 10 4 Scm 1.

  5. Preparation and properties of Sb2O3-doped SnO2 thin films deposited by using PLD

    NASA Astrophysics Data System (ADS)

    Kim, Geun Woo; Park, Keun Young; Anwar, M. S.; Seo, Yong Jun; Sung, Chang Hoon; Koo, Bon Heun; Jang, Jiho; Kil, Gyung Suk; Park, Dae Won

    2012-05-01

    Transparent conducting oxides (TCOs) are key materials in optoelectronic devices applications, such as flat-panel displays, touch panel, heat mirrors, gas sensor, light-emitting diodes and solar cell. In this study, the Sb2O3-doped SnO2 films have been deposited on glass substrates by using the pulsed laser deposition (PLD) method. The structural, electrical, and optical properties of these films have been studied as functions of the dopingconcentration, oxygen partial pressure, film thickness, and substrate temperature during deposition. The structural properties of films were analyzed by using X-ray diffraction (XRD). The electrical and the optical properties were checked by using a four probe sheetresistance, Hall measurement system and an UV-VIS-NI spectrometer, respectively. Under optimized deposition conditions (6 wt% Sb2O3, T s = 500 °C, and 60 m Torr of O2 and film thickness at 700 nm). The optimized films had an electrical resistivity of 1.3 × 10-3 Ω·cm, a carrier concentration of 2.3 × 1020 cm-3, a Hall mobility of 20.1 cm2v-1s-1 and an average optical transmittance of over 80% in the visible range.

  6. Effect of Sb addition on linear and non-linear optical properties of amorphous Ge-Se-Sn thin films

    NASA Astrophysics Data System (ADS)

    Sharma, Navjeet; Sharma, Surbhi; Sarin, Amit; Kumar, Rajesh

    2016-01-01

    Optical characterization of amorphous thin films of Ge20Sn10Se70-xSbx (x = 0, 3, 6, 9, 12, 15) has been carried out. Thin films were deposited onto pre cleaned glass substrates using thermal evaporation technique. Transmission spectra of the films were recorded, for normal incidence, in range 400-2400 nm. Refractive index of the films was calculated using the envelope method by Swanepoel. Dispersion analysis has been carried out using single effective oscillator model. Other optical constants such as absorption coefficients, extinction coefficients have also been evaluated. Tauc plots were used to evaluate the optical band gap. The refractive index has been found to be increasing while the band gap decreases with increasing Sb concentration. The observed optical behavior of the films has been explained using chemical bond approach. Cohesive energy is found to be decreasing in the present work, which reflects that bond strength decreases with the increasing content of Sb. Non-linear optical parameters (i.e. n2 and χ(3)) have been derived from linear optical parameters (i.e. n, k, Eg). Observed changes in linear and non-linear parameters have been reported in this study.

  7. Fabrication and shear strength analysis of Sn-3.5Ag/Cu-filled TSV for 3D microelectronic packaging

    NASA Astrophysics Data System (ADS)

    Sharma, Ashutosh; Jung, Do-Hyun; Roh, Myong-Hoon; Jung, Jae Pil

    2016-09-01

    In this study, lead free Sn-3.5Ag solder bumps have been deposited on Cu-filled through-silicon via (TSV) by electroplating method. The solder bumps are plated using an acidic solution composed of SnSO4, H2SO4, Ag2SO4, thiourea and an additive. The current density is varied from -30 to -60 mA/cm2 to obtain the eutectic Sn-3.5Ag solder. The copper is electroplated in TSV using an acidic solution of CuSO4·5H2O, H2SO4, HCl, and an inhibitor. The bottom-up Cu-filling in TSV is achieved by a 3-step pulse periodic reverse (PPR) electroplating. It has been observed that the eutectic Sn-3.5Ag solder is achieved at a current density of -55 mA/cm2. The solder bumps are further reflowed onto TSV at 260 °C for 20 seconds, and shear strength of the formed Sn-3.5Ag/Cu-filled TSV joint is investigated. The results indicate the formation of Cu6Sn5 and Ag3Sn intermetallic compounds (IMCs) at the joint interface. It is found that with an increase of shear speed from 0.5-10 mm/s, the shear stress initially increases to a maximum, and then decreases beyond shear speed of 10 mm/s through 500 mm/s. It is shown that the ductile fracture mode gradually decreases beyond shear speed of 10 mm/s and disappears completely at 500 mm/s.

  8. The simple hydrothermal synthesis of Ag-ZnO-SnO2 nanochain and its multiple applications.

    PubMed

    Balachandran, Subramanian; Selvam, Kaliyamoorthy; Babu, Balraj; Swaminathan, Meenakshisundaram

    2013-12-14

    In this article, we report the fabrication of a stable Ag-ZnO-SnO2 nanochain by template free hydrothermal method and its photocatalytic activity for the first time. This composite material represents a potential new class of photocatalysts with enhanced light absorption, hydrophobic and electronic properties of ZnO. This catalyst has been characterized by X-ray diffraction (XRD), high resolution scanning electron microscopy (HRSEM), field emission scanning electron microscopy (FESEM), elemental mapping, energy dispersive spectroscopy (EDS), X-ray photoelectron spectroscopy (XPS), UV-Vis diffuse reflectance spectroscopy (DRS) and photoluminescence spectroscopy (PL). XRD and elemental mapping reveal the presence of SnO2 and Ag in the catalyst. Ag-ZnO-SnO2 has increased absorption in the visible region when compared to ZnO. This three component nano junction system exhibits enhanced photocatalytic activity for the degradation of azo dyes, Acid Black 1 (AB 1) and Acid Violet 7 (AV 7) under UV light (365 nm), far exceeding those of the single and two component systems. Ag-ZnO-SnO2 is found to be reusable without appreciable loss of catalytic activity up to four runs. Based on the band gap energies of ZnO and SnO2, a mechanism is proposed for the photodegradation of dyes. Hydrophobicity and photoconductivity of Ag-ZnO-SnO2 have been evaluated. Nanochain exhibiting higher positive photoconductivity can be useful for soliton wave communication as well as solar cell applications. Our results provide some new insights on the fabrication of Ag-ZnO-SnO2 and its performance as an active photocatalyst, self cleaning and conducting material.

  9. The Maximum Fluidity Length of Solidifying Sn-Cu-Ag-Ni Solder Alloys

    NASA Astrophysics Data System (ADS)

    Gourlay, C. M.; Read, J.; Nogita, K.; Dahle, A. K.

    2008-01-01

    During wave soldering, it is important that a solder is able to flow easily to fill joints and to drain away to leave tidy fillets. The maximum fluidity length ( L f) is a simple measure of the flow behavior of solidifying alloys, defined as the distance a cooling and solidifying alloy can flow in a constant cross-section before the developing microstructure arrests flow. This paper explores the influence of alloy composition on L f in Sn-rich Sn-Cu-Ag-Ni alloys with compositions relevant to wave soldering. Significant differences in L f are measured among candidate lead-free solder alloys, which are discussed with respect to the phase diagrams and the mode of solidification.

  10. Effect of reflow and thermal aging on the microstructure and microhardness of Sn-3.7Ag-xBi solder alloys

    NASA Astrophysics Data System (ADS)

    He, M.; Acoff, V. L.

    2006-12-01

    This work investigates the effect of reflow and the thermal aging process on the microstructural evolution and microhardness of five types of Sn-Ag based lead-free solder alloys: Sn-3.7Ag, Sn-3.7Ag-1Bi, Sn-3.7Ag-2Bi, Sn-3.7Ag-3Bi, and Sn-3.7Ag-4Bi. The microhardness and microstructure of the solders for different cooling rates after reflow at 250°C and different thermal aging durations at 150°C for air-cooled samples have been studied. The effect of Bi is discussed based on the experimental results. It was found that the microhardness increases with increasing Bi addition to Sn-3.7Ag solder regardless of reflow or thermal aging process. Scanning electron microscopy images show the formation of Ag3Sn particles, Sn-rich phases, and precipitation of Bi-rich phases in different solders. The increase of microhardness with Bi addition is due to the solution strengthening and precipitation strengthening provided by Bi in the solder. The trend of decrease in microhardness with increasing duration of thermal aging was observed.

  11. Microstructure and Sn crystal orientation evolution in Sn-3.5Ag lead-free solders in high temperature packaging applications

    SciTech Connect

    Zhou, Bite; Muralidharan, Govindarajan; Kurumaddali, Nalini Kanth; Parish, Chad M; Leslie, Dr Scott; Bieler, T. R.

    2014-01-01

    Understanding the reliability of eutectic Sn-3.5Ag lead-free solders in high temperature packaging applications is of significant interest in power electronics for the next generation electric grid. Large area (2.5mm 2.5mm) Sn-3.5Ag solder joints between silicon dies and direct bonded copper substrates were thermally cycled between 5 C and 200 C. Sn crystal orientation and microstructure evolution during thermal cycling were characterized by electron backscatter diffraction (EBSD) in scanning electron microscope (SEM). Comparisons are made between observed initial texture and microstructure and its evolution during thermal cycling. Gradual lattice rotation and grain boundary misorientation evolution suggested the continuous recrystallization mechanism. Recrystallization behavior was correlated with dislocation slip activities.

  12. Elemental distribution and thermoelectric properties of layered tellurides 39R-M(0.067)Sb(0.667)Te(0.266) (M=Ge, Sn).

    PubMed

    Schneider, Matthias N; Fahrnbauer, Felix; Rosenthal, Tobias; Döblinger, Markus; Stiewe, Christian; Oeckler, Oliver

    2012-01-23

    The isostructural phases 39R-Ge(0.067)Sb(0.667)Te(0.266) (R3m, a=4.2649(1), c=75.061(2) Å) and 39R-Sn(0.067)Sb(0.667)Te(0.266) (R3m, a=4.2959(1), c=75.392(2) Å) were prepared by quenching stoichiometric melts of the pure elements and subsequent annealing at moderate temperatures. Their structures are comparable to "superlattices" synthesized by layer-by-layer deposition onto a substrate. These structures show no stacking disorder by electron microscopy. The structure of the metastable layered phases are similar to that of 39R-Sb(10)Te(3) (equivalent to Sb(0.769)Te(0.231)), which contains four A7 gray-arsenic-type layers of antimony alternating with Sb(2)Te(3) slabs. Joint refinements on single-crystal diffraction data using synchrotron radiation at several K edges were performed to enhance the scattering contrast. These refinements show that the elemental distributions at some atom positions are disordered whereas otherwise the structures are long-range ordered. The variation of the elemental concentration correlates with the variation in interatomic distance. Z-contrast scanning transmission electron microscopy (HAADF-STEM) on 39R-Ge(0.067)Sb(0.667)Te(0.266) confirms the presence of concentration gradients. The carrier-type of the isostructural metal (A7-type lamellae)-semiconductor heterostructures (Ge/Sn-doped Sb(2)Te(3) slabs) varies from n-type (Ge(0.067)Sb(0.667)Te(0.266)) to p-type (Sn(0.067)Sb(0.667)Te(0.266)). Although the absolute values of the Seebeck coefficient reached about 50-70 μV/K and the electrical conductivity is relatively high, the two isotypic phases exhibit a maximal thermoelectric figure of merit (ZT) of 0.06 at 400 °C as their thermal conductivity (κ≈8-9.5 W/mK at 400 °C) lies interestingly in between that of antimony and pure Sb(2)Te(3).

  13. Atomic transport properties of Ag xSn 1-x liquid binary alloys

    NASA Astrophysics Data System (ADS)

    Bhuiyan, E. H.; Ziauddin Ahmed, A. Z.; Bhuiyan, G. M.; Shahjahan, M.

    2008-05-01

    Atomic transport properties, in particular the shear viscosity and diffusion constants for Ag xSn 1-x less simple liquid binary alloys are theoretically studied from a statistical mechanical theory called the distribution function method. The essential ingredients of this theory are the interionic interaction and the pair distribution function for hard spheres. The interionic interaction are described from a local pseudopotential model and the effective hard sphere diameters are obtained from the thermodynamic perturbative method known as the linearized Weeks-Chandler-Andersen (LWCA). Results of calculations for shear viscosities agree well with the available experimental data.

  14. An Investigation of Microstructure and Microhardness of Sn-Cu and Sn-Ag Solders as Functions of Alloy Composition and Cooling Rate

    NASA Astrophysics Data System (ADS)

    Seo, Sun-Kyoung; Kang, Sung K.; Shih, Da-Yuan; Lee, Hyuck Mo

    2009-02-01

    The microstructure and microhardness of Sn- xAg and Sn- xCu solders were investigated as functions of alloy composition and cooling rate. The Ag compositions examined varied from 0.5 wt.% to 3.5 wt.%, while Cu varied from 0.5 wt.% to 2.0 wt.%. Three cooling rates were employed during solidification: 0.02°C/s (furnace cooling), about 10°C/s (air cooling), and 100°C/s or higher (rapid solidification). Sn grain size and orientation were observed by cross-polarization light microscopy and electron-backscattering diffraction (EBSD) techniques. The microhardness was measured to correlate the mechanical properties with alloy compositions and cooling rates. From this study, it was found that both alloy composition and cooling rate can significantly affect the Sn grain size and hardness in Sn-rich solders. The critical factors that affect the microstructure-property relationships of Sn-rich solders are discussed, including grain size, crystal orientation, dendrite cells, twin boundaries, and intermetallic compounds (IMC).

  15. Microstructure and Tensile Properties of Sn-1Ag-0.5Cu Solder Alloy Bearing Al for Electronics Applications

    NASA Astrophysics Data System (ADS)

    Shnawah, Dhafer Abdul-Ameer; Said, Suhana Binti Mohd; Sabri, Mohd Faizul Mohd; Badruddin, Irfan Anjum; Hoe, Teh Guan; Che, Fa Xing; Abood, Adnan Naama

    2012-08-01

    This work investigates the effects of 0.1 wt.% and 0.5 wt.% Al additions on bulk alloy microstructure and tensile properties as well as on the thermal behavior of Sn-1Ag-0.5Cu (SAC105) lead-free solder alloy. The addition of 0.1 wt.% Al reduces the amount of Ag3Sn intermetallic compound (IMC) particles and leads to the formation of larger ternary Sn-Ag-Al IMC particles. However, the addition of 0.5 wt.% Al suppresses the formation of Ag3Sn IMC particles and leads to a large amount of fine Al-Ag IMC particles. Moreover, both 0.1 wt.% and 0.5 wt.% Al additions suppress the formation of Cu6Sn5 IMC particles and lead to the formation of larger Al-Cu IMC particles. The 0.1 wt.% Al-added solder shows a microstructure with coarse β-Sn dendrites. However, the addition of 0.5 wt.% Al has a great effect on suppressing the undercooling and refinement of the β-Sn dendrites. In addition to coarse β-Sn dendrites, the formation of large Sn-Ag-Al and Al-Cu IMC particles significantly reduces the elastic modulus and yield strength for the SAC105 alloy containing 0.1 wt.% Al. On the other hand, the fine β-Sn dendrite and the second-phase dispersion strengthening mechanism through the formation of fine Al-Ag IMC particles significantly increases the elastic modulus and yield strength of the SAC105 alloy containing 0.5 wt.% Al. Moreover, both 0.1 wt.% and 0.5 wt.% Al additions worsen the elongation. However, the reduction in elongation is much stronger, and brittle fracture occurs instead of ductile fracture, with 0.5 wt.% Al addition. The two additions of Al increase both solidus and liquidus temperatures. With 0.5 wt.% Al addition the pasty range is significantly reduced and the differential scanning calorimetry (DSC) endotherm curve gradually shifts from a dual to a single endothermic peak.

  16. Adiabatic transformation as a search tool for new topological insulators: Distorted ternary Li2AgSb-class semiconductors and related compounds

    NASA Astrophysics Data System (ADS)

    Lin, Hsin; Das, Tanmoy; Wang, Yung Jui; Wray, L. A.; Xu, S.-Y.; Hasan, M. Z.; Bansil, A.

    2013-03-01

    We demonstrate that the first-principles based adiabatic continuation approach is a very powerful and efficient tool for constructing topological phase diagrams and locating nontrivial topological insulator materials. Using this technique, we predict that the ternary intermetallic series Li2M'X, where M'=Cu, Ag, Au, or Cd and X=Sb, Bi, or Sn, hosts a number of topological insulators with remarkable functional variants and tunability. We also predict that several III-V semimetallic compounds are topologically nontrivial. We construct a topological phase diagram in the parameter space of the atomic numbers of atoms in Li2M'X compounds, which places a large number of topological materials presented in this work as well as in earlier studies within a single unified topological framework. Our results demonstrate the efficacy of adiabatic continuation as a useful tool for exploring topologically nontrivial alloying systems and for identifying new topological insulators even when the underlying lattice does not possess inversion symmetry, and the approaches based on parity analysis are not viable.

  17. Synthesis and thermal behavior of tin-based alloy (Sn-Ag-Cu) nanoparticles

    NASA Astrophysics Data System (ADS)

    Roshanghias, Ali; Yakymovych, Andriy; Bernardi, Johannes; Ipser, Herbert

    2015-03-01

    The prominent melting point depression of nanoparticles has been the subject of a considerable amount of research. For their promising applications in electronics, tin-based nano-alloys such as near-eutectic Sn-Ag-Cu (SAC) alloys have been synthesized via various techniques. However, due to issues such as particle aggregation and oxidation or introduced impurities, the application of these nano-size particles has been confined or aborted. For instance, thermal investigations by DTA/DSC in a large number of studies revealed exothermic peaks in the range of 240-500 °C, i.e. above the melting point of SAC nanoparticles, with different and quite controversial explanations for this unclear phenomenon. This represents a considerable drawback for the application of nanoparticles. Correspondingly, in the current study, the thermal stability of SAC nanoparticles has been investigated via electron microscopy, XRD, FTIR, and DSC/TG analysis. It was found that the nanoparticles consist mainly of a metallic β-Sn core and an amorphous tin hydroxide shell structure. The SnO crystalline phase formation from this amorphous shell has been associated with the exothermic peaks on the first heating cycle of the nanoparticles, followed by a disproportionation reaction into metallic Sn and SnO2.The results also revealed that the surfactant and reducing agent cannot only affect the size and size distribution of the nanoparticles, they might also alter the ratio between the amorphous shell and the crystalline core in the structure of particles.The prominent melting point depression of nanoparticles has been the subject of a considerable amount of research. For their promising applications in electronics, tin-based nano-alloys such as near-eutectic Sn-Ag-Cu (SAC) alloys have been synthesized via various techniques. However, due to issues such as particle aggregation and oxidation or introduced impurities, the application of these nano-size particles has been confined or aborted. For

  18. The mechanisms for the growth of the anodic Pb(II) oxides films formed on Pb-Sb and Pb-Sn alloys in sulfuric acid solution

    NASA Astrophysics Data System (ADS)

    Liu, Hou-Tian; Yang, Chun-Xiao; Liang, Hai-He; Yang, Jiong; Zhou, Wei-Fang

    The anodic Pb(II) films formed on Pb, Pb-Sb and Pb-Sn alloys at 0.9 V (versus Hg/Hg 2SO 4) in 4.5 mol/l H 2SO 4 solution for 1 h were studied using alternating current (ac) impedance, open circuit decay curve and linear sweep voltammetry methods. Our research group has obtained the thickness of the anodic PbO film on Pb from the photocurrent measurement and proved that the resistance of the anodic PbO film is close to that of the interstitial liquid among the PbO particles in the film, from which it was inferred that the anodic PbO film grows via the dissolution-precipitation mechanism. It was concluded from the experimental results that (1) the films on Pb-Sb and Pb-Sn alloys also grow via the dissolution-precipitation mechanism, and the interstitial liquid may serve as the major passage for ion transportation during the film growth, (2) Sn facilitates the mechanism of oxidation of the surface layer of PbO particles to PbO 1+ x (0< x<1), (3) the influence of Sb to facilitate the growth of PbO 1+ x is smaller than that of Sn, but the doping effect of Sb(III) in the PbO crystals is more remarkable, (4) Sn increases the porosity of the anodic PbO film remarkably. All of the above effects decrease the specific resistance of the films.

  19. Insights into the mechanism of electrochemical ozone production via water splitting on the Ni and Sb doped SnO2 catalyst.

    PubMed

    Gibson, Gregory; Wang, Ziyun; Hardacre, Christopher; Lin, Wen-Feng

    2017-02-01

    The H2O splitting mechanism is a very attractive alternative used in electrochemistry for the formation of O3. The most efficient catalysts employed for this reaction at room temperature are SnO2-based, in particular the Ni/Sb-SnO2 catalyst. In order to investigate the H2O splitting mechanism density functional theory (DFT) was performed on a Ni/Sb-SnO2 surface with oxygen vacancies. By calculating different SnO2 facets, the (110) facet was deemed most stable, and further doped with Sb and Ni. On this surface, the H2O splitting mechanism was modelled paying particular attention to the final two steps, the formation of O2 and O3. Previous studies on β-PbO2 have shown that the final step in the reaction (the formation of O3) occurs via an Eley-Rideal style interaction where surface O2 desorbs before attacking surface O to form O3. It is revealed that for Ni/Sb-SnO2, although the overall reaction is the same the surface mechanism is different. The formation of O3 is found to occur through a Langmuir-Hinshelwood mechanism as opposed to the Eley-Rideal mechanism. In addition to this the relevant adsorption energies (Eads), Gibb's free energy (ΔGrxn) and activation barriers (Eact) for the final two steps modelled in the gas phase have been shown, providing the basis for a tool to develop new materials with higher current efficiencies.

  20. Enhancing visible light photocatalytic activity of direct Z-scheme SnS{sub 2}/Ag{sub 3}PO{sub 4} heterojunction photocatalysts

    SciTech Connect

    Luo, Jin Zhou, Xiaosong; Ma, Lin; Xu, Limei; Xu, Xuyao; Du, Zhihua; Zhang, Jinquan

    2016-09-15

    Highlights: • Novel direct Z-scheme SnS{sub 2}/Ag{sub 3}PO{sub 4} heterojunction photocatalysts are synthesized. • SnS{sub 2}/Ag{sub 3}PO{sub 4} exhibits much higher photocatalytic activity than pure SnS{sub 2} and Ag{sub 3}PO{sub 4}. • A possible photocatalytic mechanism was discussed in detail. - Abstract: Novel direct Z-scheme SnS{sub 2}/Ag{sub 3}PO{sub 4} heterojunction photocatalysts were successfully fabricated with SnS{sub 2} nanoplates hybridized by Ag{sub 3}PO{sub 4} nanoparticals via a facile hydrothermal and precipitation method and applied for the photocatalytic degradation of methyl orange in aqueous solution under visible light irradiation (λ > 420 nm). It was found that the photocatalytic performance of the SnS{sub 2} (2.0 wt%)/Ag{sub 3}PO{sub 4} heterojunction photocatalyst with 2.0 wt% SnS{sub 2} content was much higher than that of individual SnS{sub 2} and Ag{sub 3}PO{sub 4}. The enhanced photocatalytic activity could be ascribed to the efficient separation of photogenerated electrons and holes through the formation of direct Z-scheme system composed of SnS{sub 2} and Ag{sub 3}PO{sub 4}. Furthermore, the recycling experiments revealed that the photocorrosion behavior of Ag{sub 3}PO{sub 4} was strongly inhibited by SnS{sub 2}, it may be due to the photogenerated electrons of Ag{sub 3}PO{sub 4} would be quickly combined with the photogenerated holes of SnS{sub 2}. This work will be useful for the design of other direct Z-scheme visible-light-driven photocatalytic systems for application in energy conversion and environmental remediation.

  1. Ternary rare-earth titanium antimonides: Phase equilibria in the RE-Ti-Sb (RE=La, Er) systems and crystal structures of RE{sub 2}Ti{sub 7}Sb{sub 12} (RE=La, Ce, Pr, Nd) and RETi{sub 3}(Sn{sub x}Sb{sub 1-x}){sub 4} (RE=Nd, Sm)

    SciTech Connect

    Bie Haiying; Devon Moore, S.H.; Piercey, Davin G.; Tkachuk, Andriy V.; Zelinska, Oksana Ya.; Mar, Arthur

    2007-08-15

    Investigations on phase relationships and crystal structures have been conducted on several ternary rare-earth titanium antimonide systems. The isothermal cross-sections of the ternary RE-Ti-Sb systems containing a representative early (RE=La) and late rare-earth element (RE=Er) have been constructed at 800 deg. C. In the La-Ti-Sb system, the previously known compound La{sub 3}TiSb{sub 5} was confirmed and the new compound La{sub 2}Ti{sub 7}Sb{sub 12} (own type, Cmmm, Z=2, a=10.5446(10) A, b=20.768(2) A, and c=4.4344(4) A) was discovered. In the Er-Ti-Sb system, no ternary compounds were found. The structure of La{sub 2}Ti{sub 7}Sb{sub 12} consists of a complex arrangement of TiSb{sub 6} octahedra and disordered fragments of homoatomic Sb assemblies, generating a three-dimensional framework in which La atoms reside. Other early rare-earth elements (RE=Ce, Pr, Nd) can be substituted in this structure type. Attempts to prepare crystals in these systems through use of a tin flux resulted in the discovery of a new Sn-containing pseudoternary phase RETi{sub 3}(Sn{sub x}Sb{sub 1-x}){sub 4} for RE=Nd, Sm (own type, Fmmm, Z=8; a=5.7806(4) A, b=10.0846(7) A, and c=24.2260(16) A for NdTi{sub 3}(Sn{sub 0.1}Sb{sub 0.9}){sub 4}; a=5.7590(4) A, b=10.0686(6) A, and c=24.1167(14) A for SmTi{sub 3}(Sn{sub 0.1}Sb{sub 0.9}){sub 4}). Its structure consists of double-layer slabs of Ti-centred octahedra stacked alternately with nets of the RE atoms; the Ti atoms are arranged in kagome nets. - Graphical abstract: La{sub 2}Ti{sub 7}Sb{sub 12} contains sectioned layers consisting of Ti-centred octahedra linked by corner- and face-sharing.

  2. Ag2ZnSn(S,Se)4: A highly promising absorber for thin film photovoltaics.

    PubMed

    Chagarov, Evgueni; Sardashti, Kasra; Kummel, Andrew C; Lee, Yun Seog; Haight, Richard; Gershon, Talia S

    2016-03-14

    The growth in efficiency of earth-abundant kesterite Cu2ZnSn(S,Se)4 (CZTSSe) solar cells has slowed, due in part to the intrinsic limitations imposed by the band tailing attributed primarily to I-II antisite exchange. In this study, density functional theory simulations show that when Ag is substituted for Cu to form kesterite Ag2ZnSnSe4 (AZTSe), the I-II isolated antisite formation energy becomes 3.7 times greater than in CZTSSe, resulting in at least an order of magnitude reduction in I-II antisite density. Experimental evidence of an optoelectronically improved material is also provided. Comparison of the low-temperature photoluminescence (PL) structure of Cu(In,Ga)Se2 (CIGSe), CZTSSe, and AZTSe shows that AZTSe has a shallow defect structure with emission significantly closer to the band edge than CZTSe. Existence of suppressed band tailing is found in the proximity of the room-temperature PL peak of AZTSe to its measured band gap. The results are consistent with AZTSe being a promising alternative to CZTSSe and CIGSe for thin film photovoltaics.

  3. Ag2ZnSn(S,Se)4: A highly promising absorber for thin film photovoltaics

    NASA Astrophysics Data System (ADS)

    Chagarov, Evgueni; Sardashti, Kasra; Kummel, Andrew C.; Lee, Yun Seog; Haight, Richard; Gershon, Talia S.

    2016-03-01

    The growth in efficiency of earth-abundant kesterite Cu2ZnSn(S,Se)4 (CZTSSe) solar cells has slowed, due in part to the intrinsic limitations imposed by the band tailing attributed primarily to I-II antisite exchange. In this study, density functional theory simulations show that when Ag is substituted for Cu to form kesterite Ag2ZnSnSe4 (AZTSe), the I-II isolated antisite formation energy becomes 3.7 times greater than in CZTSSe, resulting in at least an order of magnitude reduction in I-II antisite density. Experimental evidence of an optoelectronically improved material is also provided. Comparison of the low-temperature photoluminescence (PL) structure of Cu(In,Ga)Se2 (CIGSe), CZTSSe, and AZTSe shows that AZTSe has a shallow defect structure with emission significantly closer to the band edge than CZTSe. Existence of suppressed band tailing is found in the proximity of the room-temperature PL peak of AZTSe to its measured band gap. The results are consistent with AZTSe being a promising alternative to CZTSSe and CIGSe for thin film photovoltaics.

  4. Adsorbed molecular shuttlecocks: An NIXSW study of Sn phthalocyanine on Ag(1 1 1) using Auger electron detection

    NASA Astrophysics Data System (ADS)

    Woolley, R. A. J.; Martin, C. P.; Miller, G.; Dhanak, V. R.; Moriarty, P. J.

    2007-03-01

    Normal incidence X-ray standing wave (NIXSW) spectroscopy has been used to determine the orientation of Sn phthalocyanine (SnPc) molecules in a highly ordered, but incommensurate, monolayer on the Ag(1 1 1) surface. Our sample preparation procedure differs from that used in previous work on this system [C. Stadler, S. Hansen, F. Pollinger, C. Kumpf, E. Umbach, T.-L. Lee, J. Zegenhagen, Phys. Rev. B 74 (2006) 035404] and leads to a different unit cell with basis vector lengths of ˜15.0 Å and 15.3 Å ( γ = 98°) which is oriented at an angle of ˜5° to the underlying Ag(1 1 1) lattice. Structural parameters extracted from Sn MNN NIXSW spectra indicate that SnPc, a buckled, 'shuttlecock' phthalocyanine, adsorbs in a Sn-down geometry with the Sn atom approximately 2.3 Å above the Ag(1 1 1) surface plane. Despite the incommensurate nature of the overlayer, we find a surprisingly high coherent fraction for standing wave data taken for the (1¯ 1 1) reflection and argue that this arises from the small domain size of the superstructure.

  5. Second harmonic generation response of the cubic chalcogenides Ba(6-x)Srx[Ag(4-y)Sn(y/4)](SnS4)4

    NASA Astrophysics Data System (ADS)

    Haynes, Alyssa S.; Liu, Te-Kun; Frazer, Laszlo; Lin, Jyun-Fan; Wang, Shuo-Yu; Ketterson, John B.; Kanatzidis, Mercouri G.; Hsu, Kuei-Fang

    2017-04-01

    We synthesized the barium/strontium solid solution sequence Ba6-xSrx[Ag(4-y)Sn(y/4)](SnS4)4 for nonlinear optical (NLO) applications in the infrared (IR) via a flux synthesis route. All title compounds are isotypic, crystallizing in the cubic space group I 4 ̅3d and are composed of a three-dimensional (3D) anionic framework of alternating corner-sharing SnS4 and AgS4 tetrahedra charge balanced by Ba and Sr. The shrinkage of Ba/Sr-S bond lengths causes the tetrahedra in the anionic framework to become more distorted, which results in a tunable band gap from 1.58 to 1.38 eV with increasing x values. The performance of the barium limit (x=0) is also superior to that of Sr (x=6), but surprisingly second harmonic generation (SHG) of the solid solution remains strong and is insensitive to the value of x over the range 0-3.8. Results show that the non-type-I phase-matched SHG produced by these cubic chalcogenides display intensities higher than the benchmark AgGaSe2 from 600 to 1000 nm.

  6. Investigation of interfacial reaction between Sn-Ag eutectic solder and Au/Ni/Cu/Ti thin film metallization

    NASA Astrophysics Data System (ADS)

    Park, J. Y.; Yang, C. W.; Ha, J. S.; Kim, C.-U.; Kwon, E. J.; Jung, S. B.; Kang, C. S.

    2001-09-01

    This paper reports the formation of intermetallic compounds in Au/Ni/Cu/Ti under-bump-metallization (UBM) structure reacted with Ag-Sn eutectic solder. In this study, UBM is prepared by evaporating Au(500 Å)/Ni(1000 Å)/Cu(7500 Å) /Ti (700 Å) thin films on top of Si substrates. It is then reacted with Ag-Sn eutectic solder at 260 C for various times to induce different stages of the interfacial reaction. Microstructural examination of the interface, using both chemical and crystallographic analysis, indicates that two types of intermetallic compounds are formed during the interfacial reaction. The first phase, formed at the intial stage of the reaction, is predominantly Ni3Sn4. At longer times the Ni3Sn4 phase transforms into (Cu, Ni)6Sn6, probably induced by interdiffusion of Cu and Ni. At this stage, the underlying Cu layer also reacts with Sn and forms the same phase, (Cu,Ni)6Sn5. As a result, the fully reacted interface is found to consist of two intermetallic layers with the same phase but different morphologies.

  7. Martensitic transformation and magnetocaloric properties in Ni40.4Mn46.5Sn10.9Sb2.2 ribbons

    NASA Astrophysics Data System (ADS)

    Xuan, H. C.; Zhang, T.; Wu, Y. F.; Xu, Y. K.; Li, H.; Han, P. D.; Du, Y. W.; Zhang, C. L.

    2017-01-01

    The Ni40.4Mn46.5Sn10.9Sb2.2 ribbons were prepared by melt-spun method. The martensitic transformation (MT) and magnetocaloric effect in melt-spun and annealed Ni40.4Mn46.5Sn10.9Sb2.2 ribbons were investigated. After the heat treatment, the MT temperature increases obviously in the annealed ribbons. The large values of magnetic entropy changes and the effective refrigerant capacity around the MT and Curie temperature of the austenite are found to be 30.9 and -2.2 J/kg K, 70.6 and 132.6 J/kg, respectively, under the field change of 30 kOe for the annealed ribbons. The annealing effect on the MT and magnetocaloric effect, together with the origin of the large magnetic entropy changes, has been discussed in this paper.

  8. Acid blue 29 decolorization and mineralization by anodic oxidation with a cold gas spray synthesized Sn-Cu-Sb alloy anode.

    PubMed

    do Vale-Júnior, Edilson; Dosta, Sergi; Cano, Irene Garcia; Guilemany, Josep Maria; Garcia-Segura, Sergi; Martínez-Huitle, Carlos Alberto

    2016-04-01

    The elevated cost of anodic materials used in the anodic oxidation for water treatment of effluents undermines the real application of these technologies. The study of novel alternative materials more affordable is required. In this work, we report the application of Sn-Cu-Sb alloys as cheap anodic material to decolorize azo dye Acid Blue 29 solutions. These anodes have been synthesized by cold gas spray technologies. Almost complete decolorization and COD abatement were attained after 300 and 600 min of electrochemical treatment, respectively. The influence of several variables such as supporting electrolyte, pH, current density and initial pollutant concentration has been investigated. Furthermore, the release and evolution of by-products was followed by HPLC to better understand the oxidative power of Sn-Cu-Sb electrodes.

  9. Physical and photoelectrochemical properties of Sb-doped SnO2 thin films deposited by chemical vapor deposition: application to chromate reduction under solar light

    NASA Astrophysics Data System (ADS)

    Outemzabet, R.; Doulache, M.; Trari, M.

    2015-05-01

    Sb-doped SnO2 thin films (Sb-SnO2) are prepared by chemical vapor deposition. The X-ray diffraction indicates a rutile phase, and the SEM analysis shows pyramidal grains whose size extends up to 200 nm. The variation of the film thickness shows that the elaboration technique needs to be optimized to give reproducible layers. The films are transparent over the visible region. The dispersion of the optical indices is evaluated by fitting the diffuse reflectance data with the Drude-Lorentz model. The refractive index ( n) and absorption coefficient ( k) depend on both the conditions of preparation and of the doping concentration and vary between 1.4 and 2.0 and 0.2 and 0.01, respectively. Tin oxide is nominally non-stoichiometric, and the conduction is dominated by thermally electrons jump with an electron mobility of 12 cm2 V-1 s-1 for Sb-SnO2 (1 %). The ( C 2- V) characteristic in aqueous electrolyte exhibits a linear behavior from which an electrons density of 4.15 × 1018 cm-3 and a flat-band potential of -0.83 V SCE are determined. The electrochemical impedance spectroscopy shows a semicircle attributed to a capacitive behavior with a low density of surface states. The center lies below the real axis with a depletion angle (12°), due to a constant phase element, i.e., a deviation from a pure capacitive behavior, presumably attributed to the roughness and porosity of the film. The straight line at low frequencies is attributed to the Warburg diffusion. The energy diagram reveals the photocatalytic feasibility of Sb-SnO2. As application, 90 % of the chromate concentration (20 mg L-1, pH ~3) disappears after 6 h of exposure to solar light.

  10. Effect of Isothermal Aging on the Long-Term Reliability of Fine-Pitch Sn-Ag-Cu and Sn-Ag Solder Interconnects With and Without Board-Side Ni Surface Finish

    NASA Astrophysics Data System (ADS)

    Lee, Tae-Kyu; Duh, Jeng-Gong

    2014-11-01

    The combined effects on long-term reliability of isothermal aging and chemically balanced or unbalanced surface finish have been investigated for fine-pitch ball grid array packages with Sn-3.0Ag-0.5Cu (SAC305) (wt.%) and Sn-3.5Ag (SnAg) (wt.%) solder ball interconnects. Two different printed circuit board surface finishes were selected to compare the effects of chemically balanced and unbalanced structure interconnects with and without board-side Ni surface finish. NiAu/solder/Cu and NiAu/solder/NiAu interconnects were isothermally aged and thermally cycled to evaluate long-term thermal fatigue reliability. Weibull plots of the combined effects of each aging condition and each surface finish revealed lifetime for NiAu/SAC305/Cu was reduced by approximately 40% by aging at 150°C; less degradation was observed for NiAu/SAC305/NiAu. Further reduction of characteristic life-cycle number was observed for NiAu/SnAg/NiAu joints. Microstructure was studied, focusing on its evolution near the board and package-side interfaces. Different mechanisms of aging were apparent under the different joint configurations. Their effects on the fatigue life of solder joints are discussed.

  11. Relationship between the Porco, Bolivia, Ag-Zn-Pb-Sn deposit and the Porco Caldera

    USGS Publications Warehouse

    Cunningham, C.G.

    1994-01-01

    The Porco Ag-Zn-Pb-Sn deposit, a major Ag producer in the 16th century and currently the major Zn producer in Bolivia, consists of a swarm of fissure-filling veins in the newly recognized Porco caldera. The caldera measures 5 km by 3 km and formed in response to the eruption of the 12 Ma crystal-rich dacitic Porco Tuff. The mineralization is associated with, and is probably genetically related to, the 8.6 Ma Huayna Porco stock. The Porco deposit consists of steeply dipping irregular and curvilinear veins that cut the intracaldera Porco Tuff about 1 km east of the Huayna Porco stock. Most of the veins are aligned along the structural margin (ring fracture) of the caldera. The ore deposit is zoned around the Huayna Porco stock. The primary Ag minerals are most abundant in the upper parts of the viens. Fluid inclusions in sphalerite stalactites have homogenization temperatures of about 225??C and salinities of about 8 wt% NaCl equiv. The stalactites and the presence of sparse vapor-rich inclusions suggest deposition of sphalerite under boiling conditions. -from Authors

  12. Effect of Indium Content on the Melting Point, Dross, and Oxidation Characteristics of Sn-2Ag-3Bi-xIn Solders.

    PubMed

    Jeon, Ae-Jeong; Kim, Seong-Jun; Lee, Sang-Hoon; Kang, Chung-Yun

    2013-06-01

    This paper presents the effect of indium (In) content on the melting temperature, wettabililty, dross formation, and oxidation characteristics of the Sn-2Ag-3Bi-xIn alloy. The melting temperature of the Sn-2Ag-3Bi-xIn alloy (2 ≤ x ≤ 6) was lower than 473 K. The melting range between the solidus and liquidus temperatures was approximately 20 K, irrespective of the indium content. As the indium content increased, the wetting time increased slightly and the maximum wetting force remained to be mostly constant. The dross formation decreased to approximately 50% when adding 1In to Sn-2Ag-3Bi, and no dross formation was observed in the case of Sn-2Ag-3Bi-xIn alloy (x ≥ 1.5) at 523 K for 180 min. Upon approaching the inside of the oxidized solder of the Sn-2Ag-3Bi-1.5In alloy from the surface, the O and In contents decreased and the Sn content increased based on depth profiling analysis using Auger electron spectroscopy (AES). The mechanism for restraining dross (Sn oxidation) of Sn-2Ag-3Bi alloy with addition of indium may be due to surface segregation of indium. This is due to the lower formation energy of indium oxide than those of Sn oxidation.

  13. Electronic structure of transition metal-doped XNiSn and XCoSb (X = Hf,Zr) phases in the vicinity of the band gap

    NASA Astrophysics Data System (ADS)

    Simonson, J. W.; Poon, S. J.

    2008-06-01

    Half-Heusler alloys of the compositions X1-aAaNi1-bBbSn and X1-aAaCo1-bBbSb (X = Hf,Zr) were synthesized with transition metals (A, B) substituted at the X and Ni/Co sites with the values of a and b between 0 and 0.15. Thermopower and electrical resistivity measurements from room temperature to 1100 K were performed to investigate resultant modifications to the electronic band structure in the vicinity of the band gap. As a result of these substitutions, thermopower was typically reduced across the entire temperature spectrum, in some cases changing sign. In the case of XNiSn-type alloys, electrical resistivity curves were indicative of semiconducting behavior, except in the case of samples in which Sb was introduced to the Sn site as a dopant. XCoSb-type alloys, however, were found to exhibit metallic resistivity behavior for all substitutions investigated. Hall effect measurements were performed to confirm the dominant carrier type and carrier concentration. The effects of transition metal substitution on the locations of a dopant band and the pinned Fermi level were discussed in the light of recent first-principles electronic structure calculations for half-Heusler alloys. For some of the semiconducting alloys, the band gaps that were determined from the high temperature region of the resistivity curves were found to be in closer agreement with those obtained from calculations than previously reported.

  14. Theoretical Evaluation of Cu-Sn-S and Cu-Sb-S Based Solar Absorbers for Earth-Abundant Thin-Film Solar Cells

    NASA Astrophysics Data System (ADS)

    Zawadzki, Pawel; Peng, Haowei; Zakutayev, Andriy; Lany, Stephan

    2013-03-01

    Current thin-film solar absorbers such as Cu(In/Ga)Se2 or CdTe, although remarkably efficient, incorporate limited-supply elements like indium or tellurium. Meeting the cost competiveness criterion necessary for a large-scale deployment of thin-film PV technologies requires development of new earth-abundant solar absorbers. In an effort to accelerate such development we combine first principles theory and high throughput experiments to explore In-free ternary copper chalcogenides. As part of the theoretical evaluation, we study the Cu2SnS3, Cu4SnS4, CuSbS2 and Cu3SbS3 based compounds formed by isovalent alloying on Sn, Sb, and S sites. For this set of materials we predict band-structures and optical absorption coefficients and demonstrate the feasibility of achieving the optimal band gap of 1.3 eV for a single junction cell and a high optical absorption of ~104 cm-1 at Eg+0.2 eV. We additionally perform defect studies to elucidate the doping trends within this class of materials. The project ``Rapid Development of Earth-abundant Thin Film Solar Cells'' is supported as a part of the SunShot initiative by the U. S. Department of Energy, Office of Energy Efficiency and Renewable Energy under Contract No. DE-AC36-08GO28308 to NREL.

  15. Photoanode with Enhanced Performance Achieved by Coating BiVO4 onto ZnO-Templated Sb-Doped SnO2 Nanotube Scaffold.

    PubMed

    Zhou, Lite; Yang, Yang; Zhang, Jing; Rao, Pratap M

    2017-04-05

    The performance of BiVO4 photoanodes, especially under front-side illumination, is limited by the modest charge transport properties of BiVO4. Core/shell nanostructures consisting of BiVO4 coated onto a conductive scaffold are a promising route to improving the performance of BiVO4-based photoanodes. Here, we investigate photoanodes composed of thin and uniform layers of BiVO4 particles coated onto Sb-doped SnO2 (Sb:SnO2) nanotube arrays that were synthesized using a sacrificial ZnO template with controllable length and packing density. We demonstrate a new record for the product of light absorption and charge separation efficiencies (ηabs × ηsep) of ∼57.3 and 58.5% under front- and back-side illumination, respectively, at 0.6 VRHE. Moreover, both of these high ηabs × ηsep efficiencies are achieved without any extra treatment or intentional doping in BiVO4. These results indicate that integration of Sb:SnO2 nanotube cores with other successful strategies such as doping and hydrogen treatment can increase the performance of BiVO4 and related semiconductors closer to their theoretical potential.

  16. First-principles study of new series of quaternary Heusler alloys CsSrCZ (Z=Si, Ge, Sn, P, As, and Sb)

    NASA Astrophysics Data System (ADS)

    Bouabça, A.; Rozale, H.; Amar, A.; Wang, X. T.; Sayade, A.; Chahed, A.

    2016-12-01

    The structural, electronic, magnetic, and thermal properties of new quaternary Heusler alloys CsSrCZ (Z=Si, Ge, Sn, P, As, and Sb) were investigated using the full-potential linearized augmented plane wave (FPLAPW) within the generalized gradient approximation (GGA) and GGA plus modified Becke and Johnson as the exchange correlation. The results showed that all Heusler compounds were stable in Type (I) structure. The CsSrCZ (Z=Si, Ge, Sn) compounds had a nearly HM characteristic, and CsSrCZ (Z=P, As, Sb) compounds were true half-metallic (HM) ferromagnets. The strong spin polarization of p orbital for C, Si, Ge, Sn, P, As, and Sb atoms is found to be the origin of ferromagnetic. The half-metallicity is preserved up to a lattice contraction of 3.45%, 1.69%, 1.69%, 7.16%, 7.16%, and 11.2% for all six quaternary Heusler compounds. We also investigated the thermal effects using the quasi-harmonic Debye model.

  17. AgSb(S{sub x}Se{sub 1−x}){sub 2} thin films for solar cell applications

    SciTech Connect

    González, J.O.; Shaji, S.; Avellaneda, D.; Castillo, A.G.; Roy, T.K. Das; and others

    2013-05-15

    Highlights: ► AgSb(S{sub x}Se{sub 1−x}){sub 2} thin films were formed by heating Na{sub 2}SeSO{sub 3} dipped Sb{sub 2}S{sub 3}/Ag layers. ► S/Se ratio was varied by changing the dipping time in Na{sub 2}SeSO{sub 3} solution. ► Characterized the films using XRD, XPS, SEM, Optical and electrical measurements. ► Band gap engineering of 1−1.1 eV for x = 0.51 and 0.52 respectively. ► PV Glass/FTO/CdS/AgSb(S{sub x}Se{sub 1−x}){sub 2}/C were prepared showing V{sub oc} = 410 mV, J{sub sc} = 5.7 mA/cm{sup 2}. - Abstract: Silver antimony sulfoselenide (AgSb(S{sub x}Se{sub 1−x}){sub 2}) thin films were prepared by heating glass/Sb{sub 2}S{sub 3}/Ag layers after selenization using sodium selenosulphate solution. First, Sb{sub 2}S{sub 3} thin films were deposited on glass substrates from a chemical bath containing SbCl{sub 3} and Na{sub 2}S{sub 2}O{sub 3}. Then Ag thin films were thermally evaporated onto glass/Sb{sub 2}S{sub 3}, followed by selenization by dipping in an acidic solution of Na{sub 2}SeSO{sub 3}. The duration of selenium dipping was varied as 30 min and 2 h. The heating condition was at 350 °C for 1 h in vacuum. Analysis of X-ray diffraction pattern of the thin films formed after heating showed the formation of AgSb(S{sub x}Se{sub 1−x}){sub 2}. Morphology and elemental analysis were done by scanning electron microscopy and energy dispersive X-ray detection. Depth profile of composition of the thin films was performed by X-ray Photoelectron Spectroscopy. The spectral study showed the presence of Ag, Sb, S, and Se, and the corresponding binding energy analysis confirmed the formation of AgSb(S{sub x}Se{sub 1−x}){sub 2}. Photovoltaic structures (PV) were prepared using AgSb(S{sub x}Se{sub 1−x}){sub 2} thin films as absorber and CdS thin films as window layers on FTO coated glass substrates. The PV structures were heated at 60–80 °C in air for 1 h to improve ohmic contact. Analysis of J–V characteristics of the PV structures showed V

  18. Effect of Sb Segregation on Conductance and Catalytic Activity at Pt/Sb-Doped SnO2 Interface: A Synergetic Computational and Experimental Study.

    PubMed

    Fu, Qiang; Colmenares Rausseo, Luis César; Martinez, Umberto; Dahl, Paul Inge; García Lastra, Juan Maria; Vullum, Per Erik; Svenum, Ingeborg-Helene; Vegge, Tejs

    2015-12-23

    Antimony-doped tin dioxide (ATO) is considered a promising support material for Pt-based fuel cell cathodes, displaying enhanced stability over carbon-based supports. In this work, the effect of Sb segregation on the conductance and catalytic activity at Pt/ATO interface was investigated through a combined computational and experimental study. It was found that Sb-dopant atoms prefer to segregate toward the ATO/Pt interface. The deposited Pt catalysts, interestingly, not only promote Sb segregation, but also suppress the occurrence of Sb(3+) species, a charge carrier neutralizer at the interface. The conductivity of ATO was found to increase, to a magnitude close to that of activated carbon, with an increment of Sb concentration before reaching a saturation point around 10%, and then decrease, indicating that Sb enrichment at the ATO surface may not always favor an increment of the electric current. In addition, the calculation results show that the presence of Sb dopants in ATO has little effect on the catalytic activity of deposited three-layer Pt toward the oxygen reduction reaction, although subsequent alloying of Pt and Sb could lower the corresponding catalytic activity. These findings help to support future applications of ATO/Pt-based materials as possible cathodes for proton exchange membrane fuel cell applications with enhanced durability under practical applications.

  19. Size effect model on kinetics of interfacial reaction between Sn-xAg-yCu solders and Cu substrate

    PubMed Central

    Huang, M. L.; Yang, F.

    2014-01-01

    The downsizing of solder balls results in larger interfacial intermetallic compound (IMC) grains and less Cu substrate consumption in lead-free soldering on Cu substrates. This size effect on the interfacial reaction is experimentally demonstrated and theoretically analyzed using Sn-3.0Ag-0.5Cu and Sn-3.5Ag solder balls. The interfacial reaction between the Sn-xAg-yCu solders and Cu substrates is a dynamic response to a combination of effects of interfacial IMC growth, Cu substrate consumption and composition variation in the interface zone. A concentration gradient controlled (CGC) kinetics model is proposed to explain the combined effects. The concentration gradient of Cu at the interface, which is a function of solder volume, initial Cu concentration and reaction time, is the root cause of the size effect. We found that a larger Cu concentration gradient results in smaller Cu6Sn5 grains and more consumption of Cu substrate. According to our model, the growth kinetics of interfacial Cu6Sn5 obeys a t1/3 law when the molten solder has approached the solution saturation, and will be slower otherwise due to the interfering dissolution mechanism. The size effect introduced in this model is supported by a good agreement between theoretical and experimental results. Finally, the scope of application of this model is discussed. PMID:25408359

  20. Novel mixed metal Ag(I)-Sb(III)-metallotherapeutics of the NSAIDs, aspirin and salicylic acid: Enhancement of their solubility and bioactivity by using the surfactant CTAB.

    PubMed

    Gkaniatsou, E I; Banti, C N; Kourkoumelis, N; Skoulika, S; Manoli, M; Tasiopoulos, A J; Hadjikakou, S K

    2015-09-01

    The already known Ag(I)-Sb(III) compound of the formula {Ag(Ph3Sb)3(NO3)} (1) and two novel mixed metal Ag(I)-Sb(III) metallotherapeutics of the formulae {Ag(Ph3Sb)3(SalH)}(2) and {Ag(Ph3Sb)3(Asp)}(3) (SalH2=salicylic acid, AspH=aspirin or 2-acetylsalicylic acid and Ph3Sb=triphenyl antimony(III)) have been synthesised and characterised by m.p., vibrational spectroscopy (mid-FT-IR), (13)C-,(1)H-NMR, UV-visible (UV-vis) spectroscopic techniques, high resolution mass spectroscopy (HRMS) and X-ray crystallography. Compounds 1,-3 were treated with the surfactant cetyltrimethylammonium bromide (CTAB) in order to enhance their solubility and as a consequence their bioactivity. The resulting micelles a-c were characterised with X-ray powder diffraction (XRPD) analysis, X-ray fluorescence (XRF) spectroscopy, Energy-dispersive X-ray spectroscopy (EDX), conductivity, Thermal gravimetry-differential thermal analysis (TG-DTA), and atomic absorption. Compounds 1-3 and the relevant micelles a-c were evaluated for their in vitro cytotoxic activity against human cancer cell lines: MCF-7 (breast, estrogen receptor (ER) positive), MDA-MB-231 (breast, ER negative) and MRC-5 (normal human fetal lung fibroblast cells) with sulforhodamine B (SRB) colorimetric assay. The results show significant increase in the activity of micelles compared to that of the initial compounds. Moreover, micelles exhibited lower activity against normal cells than tumor cells. The binding affinity of a-c towards the calf thymus (CT)-DNA, lipoxygenase (LOX) and glutathione (GSH) was studied by the fluorescent emission light and UV-vis spectroscopy.

  1. Comparison of Extensive Thermal Cycling Effects on Microstructure Development in Micro-alloyed Sn-Ag-Cu Solder Joints

    SciTech Connect

    Anderson, Iver E.; Boesenberg, Adam; Harringa, Joel; Riegner, David; Steinmetz, Andrew; Hillman, David

    2011-09-28

    Pb-free solder alloys based on the Sn-Ag-Cu (SAC) ternary eutectic have promise for widespread adoption across assembly conditions and operating environments, but enhanced microstructural control is needed. Micro-alloying with elements such as Zn was demonstrated for promoting a preferred solidification path and joint microstructure earlier in simple (Cu/Cu) solder joints studies for different cooling rates. This beneficial behavior now has been verified in reworked ball grid array (BGA) joints, using dissimilar SAC305 (Sn-3.0Ag-0.5Cu, wt.%) solder paste. After industrial assembly, BGA components joined with Sn-3.5Ag-0.74Cu-0.21Zn solder were tested in thermal cycling (-55 C/+125 C) along with baseline SAC305 BGA joints beyond 3000 cycles with continuous failure monitoring. Weibull analysis of the results demonstrated that BGA components joined with SAC + Zn/SAC305 have less joint integrity than SAC305 joints, but their lifetime is sufficient for severe applications in consumer, defense, and avionics electronic product field environments. Failure analysis of the BGA joints revealed that cracking did not deviate from the typical top area (BGA component side) of each joint, in spite of different Ag3Sn blade content. Thus, SAC + Zn solder has not shown any advantage over SAC305 solder in these thermal cycling trials, but other characteristics of SAC + Zn solder may make it more attractive for use across the full range of harsh conditions of avionics or defense applications.

  2. Characteristics of SnO2:Sb Films as Transparent Conductive Electrodes of Flexible Inverted Organic Solar Cells.

    PubMed

    Lee, Jaehyeong; Kim, Nam-Hoon; Park, Yong Seob

    2016-05-01

    Antimony-doped tin oxide (ATO) films were deposited on polyethersulfone (PES) substrates by means of a radio frequency (RF) magnetron sputtering method, using a SnO2 target mixed with 6 wt% Sb at room temperature and using various RF powers; these films were used as transparent electrodes in inverted organic solar cells (IOSC). We investigated the structural, optical, and electrical properties of the resulting films by means of various analyses, including X-ray diffraction (XRD), UV-visible spectroscopy, and Hall effect measurements. The crystallinity and conductivity of the ATO films were increased by increasing the RF power used. Based on the experimental data acquired, we fabricated IOSCs based on ATO electrodes deposited by using various conditions. Each IOSC device was composed of an ATO electrode, a ZnO buffer layer, a photoactive layer (P3HT:PCBM), and an Al cathode. The IOSC based on an ATO electrode fabricated at the RF power of 160 W exhibited good device performance due to the electrode's high conductivity and crystallinity.

  3. A study of the microstructure, thermal properties and wetting kinetics of Sn-3Ag- xZn lead-free solders

    NASA Astrophysics Data System (ADS)

    Li, Yulong; Yu, Xiao; Sekulic, Dusan P.; Hu, Xiaowu; Yan, Ming; Hu, Ronghua

    2016-06-01

    Microstructure, thermal properties and wetting kinetics of Sn-3Ag- xZn solders ( x = 0.4, 0.6, 0.8, 1, 2 and 4 wt%) were systematically investigated. The results indicate that a small amount of Zn (Zn wt% ≤ 1 wt%) has a rather moderate effect on the microstructure morphology of the Sn-3Ag- xZn solders. The microstructures are composed of a β-Sn phase and the mixture of Ag3Sn and ζ-AgZn particles. However, the β-Sn phase reduces its volume fraction in the entire microstructure and the intermetallic compounds population increases with the increasing of Zn content. The microstructure is dramatically changed with a further increase in the Zn content. The γ-AgZn phase is formed in a Sn-3Ag-2Zn solder. The ɛ-AgZn phase is formed in a Sn-3Ag-4Zn solder. The melting temperature and the undercooling of the Sn-3Ag- xZn solder alloys decrease with the increase in Zn content, reach to a minimum value when the content of Zn is 1 wt%, and then increase with further increase in Zn content. The Sn-3Ag-1Zn demonstrates the minimum value of 228.13 °C in the melting temperature and 13.87 °C in undercooling. The wetting kinetics of the main spreading stage features the power law of R n ~ t ( n = 1), which is controlled by chemical reactions at the triple line.

  4. Controlled preparation of Au/Ag/SnO2 core-shell nanoparticles using a photochemical method and applications in LSPR based sensing

    NASA Astrophysics Data System (ADS)

    Zhou, Na; Ye, Chen; Polavarapu, Lakshminarayana; Xu, Qing-Hua

    2015-05-01

    A photochemical method for the controlled preparation of core-shell Au/Ag/SnO2 nanorods (NRs) and nanospheres (NSs) has been developed based on photo-induced electron transfer processes in the plasmonic metal-semiconductor system. Au/AgNR/SnO2 and Au/AgNS/SnO2 were prepared by the UV irradiation of a mixture of mesoporous SnO2 coated AuNRs, or AuNSs, and AgNO3, in which AgNO3 was reduced by electrons transferred from the photo-excited mesoporous SnO2 (semiconductor) to the gold (metal). This method allows precise control over the composition and optical properties of the obtained nanoparticles. The LSPR refractive index sensitivity of the obtained Au/AgNR/SnO2 nanoparticles has been optimized to obtain a refractive index sensitivity of ~442 nm RIU-1. The optimized nanoparticles were subsequently chosen for the LSPR based sensing of glutathione (GSH) with the limit of detection of ~7.5 × 10-7 M. This photochemical method allows the controlled preparation of various Au/Ag/SnO2 nanoparticles to adjust their LSPR to suit various applications.A photochemical method for the controlled preparation of core-shell Au/Ag/SnO2 nanorods (NRs) and nanospheres (NSs) has been developed based on photo-induced electron transfer processes in the plasmonic metal-semiconductor system. Au/AgNR/SnO2 and Au/AgNS/SnO2 were prepared by the UV irradiation of a mixture of mesoporous SnO2 coated AuNRs, or AuNSs, and AgNO3, in which AgNO3 was reduced by electrons transferred from the photo-excited mesoporous SnO2 (semiconductor) to the gold (metal). This method allows precise control over the composition and optical properties of the obtained nanoparticles. The LSPR refractive index sensitivity of the obtained Au/AgNR/SnO2 nanoparticles has been optimized to obtain a refractive index sensitivity of ~442 nm RIU-1. The optimized nanoparticles were subsequently chosen for the LSPR based sensing of glutathione (GSH) with the limit of detection of ~7.5 × 10-7 M. This photochemical method allows

  5. Mechanistic Prediction of the Effect of Microstructural Coarsening on Creep Response of SnAgCu Solder Joints

    NASA Astrophysics Data System (ADS)

    Mukherjee, S.; Chauhan, P.; Osterman, M.; Dasgupta, A.; Pecht, M.

    2016-07-01

    Mechanistic microstructural models have been developed to capture the effect of isothermal aging on time dependent viscoplastic response of Sn3.0Ag0.5Cu (SAC305) solders. SnAgCu (SAC) solders undergo continuous microstructural coarsening during both storage and service because of their high homologous temperature. The microstructures of these low melting point alloys continuously evolve during service. This results in evolution of creep properties of the joint over time, thereby influencing the long term reliability of microelectronic packages. It is well documented that isothermal aging degrades the creep resistance of SAC solder. SAC305 alloy is aged for (24-1000) h at (25-100)°C (~0.6-0.8 × T melt). Cross-sectioning and image processing techniques were used to periodically quantify the effect of isothermal aging on phase coarsening and evolution. The parameters monitored during isothermal aging include size, area fraction, and inter-particle spacing of nanoscale Ag3Sn intermetallic compounds (IMCs) and the volume fraction of micronscale Cu6Sn5 IMCs, as well as the area fraction of pure tin dendrites. Effects of microstructural evolution on secondary creep constitutive response of SAC305 solder joints were then modeled using a mechanistic multiscale creep model. The mechanistic phenomena modeled include: (1) dispersion strengthening by coarsened nanoscale Ag3Sn IMCs in the eutectic phase; and (2) load sharing between pro-eutectic Sn dendrites and the surrounding coarsened eutectic Sn-Ag phase and microscale Cu6Sn5 IMCs. The coarse-grained polycrystalline Sn microstructure in SAC305 solder was not captured in the above model because isothermal aging does not cause any significant change in the initial grain size and orientation of SAC305 solder joints. The above mechanistic model can successfully capture the drop in creep resistance due to the influence of isothermal aging on SAC305 single crystals. Contribution of grain boundary sliding to the creep strain of

  6. Syntheses and characterization of one-dimensional alkali metal antimony(III) thiostannates(IV), A{sub 2}Sb{sub 2}Sn{sub 3}S{sub 10} (A=K, Rb, Cs)

    SciTech Connect

    Yohannan, Jinu P.; Vidyasagar, Kanamaluru

    2015-01-15

    Three new isostructural quaternary antimony(III) thiostannates(IV), A{sub 2}Sb{sub 2}Sn{sub 3}S{sub 10} (A=K, Rb, Cs) have been synthesized by using alkali metal thiosulfate flux and structurally characterized by X-ray diffraction. Their structures contain A{sup +} ions around the [Sb{sub 2}Sn{sub 3}S{sub 10}]{sup 2−} chains, which are built from SbS{sub 3} pyramids, SnS{sub 6} octahedra and SnS{sub 4} tetrahedra. Raman and Mössbauer spectroscopic measurements corroborate the oxidation states and coordination environments of Sb(III) and Sn(IV). All three compounds are wide band gap semiconductors. Potassium compound undergoes partial exchange with strontium, cadmium and lead ions. - Graphical abstract: Syntheses, crystal structure, spectroscopic and partial ion-exchange studies of new one-dimensional alkali metal antimony(III) thiostannates(IV), A{sub 2}Sb{sub 2}Sn{sub 3}S{sub 10} (A=K, Rb, Cs) are described. - Highlights: • Syntheses of new alkali metal antimony(III) thiostannates(IV), A{sub 2}Sb{sub 2}Sn{sub 3}S{sub 10} (A=K, Rb, Cs). • Wide band gap semiconductors with one-dimensional structure. • Topotactic partial exchange of K{sup +} ions of K{sub 2}Sb{sub 2}Sn{sub 3}S{sub 10} with Sr{sup 2+}, Cd{sup 2+} and Pb{sup 2+} ions.

  7. [The corrosion behavior of antimony in a Ag-Sn-Cu-Sb amalgam].

    PubMed

    Weiland, M; Borrmann, S; Nossek, H

    1989-01-01

    Specimen of amalgam containing antimony were stored in solutions with different pH and different content of rhodanide until 21 days. The most antimony were solved within 24 hours. After 7 days an increase of the antimony concentration were not observed in physiological pH. An inhibition of corrosion by rhodanide existed only after incubation from 21 days. The quantity of antimony (10-21 micrograms) were analysed by mean of atomic absorption spectroscopy. It represent not a risk for the health. The natural presence of this element in environment and in human body is discussed to the analysed quantity of solved antimony.

  8. Photovoltaic applications of Cu(Sb,Bi)SM (M = Ag, Pb, Pt)

    NASA Astrophysics Data System (ADS)

    Tablero, C.

    2017-04-01

    Ternary Cu-(Sb,Bi)-S compounds are great absorbents of the solar radiation with a variety of applications including optoelectronic and photovoltaic applications. The analyses of several quaternary semiconductors derived from Cu-(Sb,Bi)-S materials is carried out using first-principles density-functional theory with orbital-dependent one-electron potentials. These analyses focus on the optoelectronic properties and the potential for solar cells. The optical properties are obtained from first-principles calculations, and split into inter- and intra-shell-species contributions in order to quantify the optical transitions responsible for the absorption. The absorption coefficients are then used as criteria to evaluate the efficiencies of these materials under several sunlight concentrations. The results indicate high energy photovoltaic conversion efficiency because of the large intra shell s-p absorption of the S and Sb or Bi atomic species.

  9. The optoelectronic properties of a solar energy material: Ag2HgSnS4

    NASA Astrophysics Data System (ADS)

    Hadjri Mebarki, S.; Amrani, B.; Driss Khodja, K.; Khelil, A.

    2017-03-01

    We used an ab initio full potential-linearized augmented plane wave technique within the density functional theory to study the structural and optoelectronic properties of Ag2HgSnS4 in a wurtzite-stannite phase. The exchange correlation effects are included through the generalized gradient approximation and modified Becke-Johnson exchange potential. Various physical quantities, such as lattice parameter, bulk modulus, band structure and density of states, are given. Also, we have presented the results of the effective mass for the electrons in the CB and the holes in the BV. We show that the modified Becke-Johnson exchange potential can predict the energy band gap in better agreement with the experiment. In addition the dielectric function and energy-loss function are presented for the energy range of 0-26 eV. The electronic and optical properties indicate that this compound can be successfully used in optoelectronic devices

  10. Nanoscale nuclei in phase change materials: Origin of different crystallization mechanisms of Ge{sub 2}Sb{sub 2}Te{sub 5} and AgInSbTe

    SciTech Connect

    Lee, Bong-Sub Bogle, Stephanie N.; Darmawikarta, Kristof; Abelson, John R.; Shelby, Robert M.; Retter, Charles T.; Burr, Geoffrey W.; Raoux, Simone

    2014-02-14

    Phase change memory devices are based on the rapid and reversible amorphous-to-crystalline transformations of phase change materials, such as Ge{sub 2}Sb{sub 2}Te{sub 5} and AgInSbTe. Since the maximum switching speed of these devices is typically limited by crystallization speed, understanding the crystallization process is of crucial importance. While Ge{sub 2}Sb{sub 2}Te{sub 5} and AgInSbTe show very different crystallization mechanisms from their melt-quenched states, the nanostructural origin of this difference has not been clearly demonstrated. Here, we show that an amorphous state includes different sizes and number of nanoscale nuclei, after thermal treatment such as melt-quenching or furnace annealing is performed. We employ fluctuation transmission electron microscopy to detect nanoscale nuclei embedded in amorphous materials, and use a pump-probe laser technique and atomic force microscopy to study the kinetics of nucleation and growth. We confirm that melt-quenched amorphous Ge{sub 2}Sb{sub 2}Te{sub 5} includes considerably larger and more quenched-in nuclei than its as-deposited state, while melt-quenched AgInSbTe does not, and explain this contrast by the different ratio between quenching time and nucleation time in these materials. In addition to providing insights to the crystallization process in these technologically important devices, this study presents experimental illustrations of temperature-dependence of nucleation rate and growth speed, which was predicted by theory of phase transformation but rarely demonstrated.

  11. Controlled preparation of Au/Ag/SnO2 core-shell nanoparticles using a photochemical method and applications in LSPR based sensing.

    PubMed

    Zhou, Na; Ye, Chen; Polavarapu, Lakshminarayana; Xu, Qing-Hua

    2015-05-21

    A photochemical method for the controlled preparation of core-shell Au/Ag/SnO2 nanorods (NRs) and nanospheres (NSs) has been developed based on photo-induced electron transfer processes in the plasmonic metal-semiconductor system. Au/AgNR/SnO2 and Au/AgNS/SnO2 were prepared by the UV irradiation of a mixture of mesoporous SnO2 coated AuNRs, or AuNSs, and AgNO3, in which AgNO3 was reduced by electrons transferred from the photo-excited mesoporous SnO2 (semiconductor) to the gold (metal). This method allows precise control over the composition and optical properties of the obtained nanoparticles. The LSPR refractive index sensitivity of the obtained Au/AgNR/SnO2 nanoparticles has been optimized to obtain a refractive index sensitivity of ∼442 nm RIU(-1). The optimized nanoparticles were subsequently chosen for the LSPR based sensing of glutathione (GSH) with the limit of detection of ∼7.5 × 10(-7) M. This photochemical method allows the controlled preparation of various Au/Ag/SnO2 nanoparticles to adjust their LSPR to suit various applications.

  12. Low-cycle fatigue behavior and mechanisms of a lead-free solder 96.5Sn/3.5Ag

    NASA Astrophysics Data System (ADS)

    Kanchanomai, Chaosuan; Miyashita, Yukio; Mutoh, Yoshiharu

    2002-02-01

    Low-cycle fatigue tests of as-cast Sn-Ag eutectic solder (96.5Sn/3.5Ag) were performed using a noncontact strain controlled system at 20°C. The fatigue behavior followed the Coffin-Manson equation with a fatigue-ductility exponent of 0.76. Without local deformation and stress concentration at contact points between the extensometer and the specimen surface in strain-controlled fatigue tests, crack initiation and propagation behavior was observed on the specimen surface using a replication technique. After failure, the longitudinal cross sections were also examined using scanning electron microscopy (SEM). Microcracks initiated from steps at the boundary between the Sn-dendrite and the Sn-Ag eutectic structure and cavities along the boundaries especially around the Ag3Sn particles. Stage II crack propagated in mixed manner with intergranular cracks along the Sn-dendrite boundaries and transgranular cracks through the Sn-dendrites and the Sn-Ag eutectic structure. Propagation of stage II cracks could be expressed by the relation of dac/dN = 4.7 × 10-11[ΔJ]1.5, where ac is the average crack length and ΔJ is the J-integral range. After fatigue tests, small grains were observed in Sn-dendrites near the fracture surface.

  13. Encapsulating Sn(x)Sb Nanoparticles in Multichannel Graphene-Carbon Fibers As Flexible Anodes to Store Lithium Ions with High Capacities.

    PubMed

    Tang, Xuan; Yan, Feilong; Wei, Yuehua; Zhang, Ming; Wang, Taihong; Zhang, Tianfang

    2015-10-07

    SnxSb intermetallic composites as high theoretical capacities anodes for lithium ion batteries (LIBs) suffer from the quick capacity fading owing to their huge volume change. In this study, flexible mats made up of SnxSb-graphene-carbon porous multichannel nanofibers are fabricated by an electrospinning method and succedent annealing treatment at 700 °C. The flexible mats as binder-free anodes show a specific capacity of 729 mA h/g in the 500th cycle at a current density of 0.1 A/g, which is much higher than those of graphene-carbon nanofibers, pure carbon nanofibers, and SnxSb-graphene-carbon nanofibers at the same cycle. The flexible mats could provide a reversible capacity of 381 mA h/g at 2 A/g, also higher than those of nanofibers, graphene-carbon nanofibers, and SnxSb-carbon nanofibers. It is found that the suitable nanochannels could accommodate the volume expansion to achieve a high specific capacity. Besides, the graphene serves as both conductive and mechanical-property additives to enhance the rate capacity and flexibility of the mats. The electrospinning technique combined with graphene modification may be an effective method to produce flexible electrodes for fuel cells, lithium ion batteries, and super capacitors.

  14. Understanding nanostructures in thermoelectric materials: an electron microscopy study of AgPb{sub 18}SbSe{sub 20} crystals.

    SciTech Connect

    Lioutas, C. B.; Frangis, N.; Todorov, I.; Chung, D. Y.; Kanatzidis, M. G.; Materials Science Division; Aristotle Univ. Thessaloniki; Northwestern Univ.

    2010-01-01

    The characterization and understanding of the presence of nanostructuring in bulk thermoelectric materials requires real space atomic level information. We report electron diffraction and high-resolution transmission electron microscopy studies of crystals of the system AgPb{sub 18}SbSe{sub 20} (=18PbSe + AgSbSe{sub 2}) which reveal that this system is nanostructured rather than a solid solution. Nanocrystals of varying sizes are found, endotaxially grown in the matrix of PbSe (phase A), and consist of two phases, a cubic one (phase B) and a tetragonal one (phase C). Well-defined coherent interfaces between the phases in the same nanocrystals are observed. On the basis of the results of combined electron crystallography techniques, we propose reasonable structural models for the phases B and C. There are significant differences in the nanostructuring chemistry between AgPb{sub 18}SbSe{sub 20} and the telluride analog AgPb{sub 18}SbTe{sub 20} (LAST-18).

  15. Diode-pumped mode-locked Tm:LuAG laser at 2  μm based on GaSb-SESAM.

    PubMed

    Luan, C; Yang, K; Zhao, J; Zhao, S; Li, T; Zhang, H; He, J; Song, L; Dekorsy, T; Guina, M; Zheng, L

    2017-02-15

    Mode-locking of a directly diode-pumped Tm:LuAG laser is demonstrated using GaSb-based semiconductor saturable absorber mirrors (SESAMs). Stable and self-starting mode-locked operation was realized, generating pulses as short as 13.6 ps at 2024 nm with a maximum output power of 98 mW. Two GaInAs-based SESAMs were used for comparison with the operation based upon the use of the GaSb SESAM; in this case, longer pulses with durations of 27 ps and 34 ps were obtained under the same experimental conditions. Our work sets a new record in pulse duration for mode-locked Tm:LuAG lasers and confirms that lattice-matched GaSb-based SESAMs are beneficial for mode-locked solid-state lasers in the 2 μm range.

  16. Effect of Ag-content on structure, corrosion behaviour and mechanical properties of Sn-9Zn lead-free solder alloy

    NASA Astrophysics Data System (ADS)

    Said Gouda, El; Abdel Aziz, H.; El Gendy, Y.; Saad Allah, F.; Hammam, M.

    2010-12-01

    The effect of (0.5-3.5) wt.% Ag additions on microstructure, melting, corrosion and mechanical properties of Sn-9Zn eutectic lead-free solder alloy has been studied and analyzed. The study included X-ray diffraction and scanning electron microscopy (SEM) to identify the microstructure of these alloys. The results showed that, continuous additions of Ag caused formation of Ag-Zn and Ag-Sn compounds which led to decrease the precipitations of Zn in Sn-matrix. These compounds led to increase the melting point of the alloys, which confirmed by the formation of small endothermic peaks in the higher temperature range followed the main peak of the DTA curves. Also, the DTA measurements confirmed that the alloy of composition Sn-9Zn-3.5Ag is the ternary eutectic alloy. Vicker's micro-hardness number of Sn-9Zn alloy increases with small additions of 0.5 and 1 wt.% Ag. Furthermore, it decreases to lower values with further increase of Ag content. Also, micro-creep behaviour, creep rate and corrosion behaviour of the Sn-9Zn-Ag alloys have been measured at room temperature.

  17. Electrochemical Formation of Multilayer SnO2-Sb x O y Coating in Complex Electrolyte

    NASA Astrophysics Data System (ADS)

    Maizelis, Antonina; Bairachniy, Boris

    2017-02-01

    The multilayer antimony-doped tin dioxide coating was obtained by cathodic deposition of multilayer metal-hydroxide coating with near 100-nm thickness layers on the alloy underlayer accompanied by the anodic oxidation of this coating. The potential regions of deposition of tin, antimony, tin-antimony alloy, and mixture of this metals and their hydroxides in the pyrophosphate-tartrate electrolyte were revealed by the cyclic voltammetric method. The possibility of oxidation of cathodic deposit consisting of tin and Sn(II) hydroxide compounds to the hydrated tin dioxide in the same electrolyte was demonstrated. The operations of alloy underlayer deposition and oxidation of multilayer metal-hydroxide coating were proposed to carry out in the diluted pyrophosphate-tartrate electrolyte, similar to the main electrolyte. The accelerated tests showed higher service life of the titanium electrode with multilayer antimony-doped tin dioxide coating compared to both electrode with single-layer electrodeposited coating and the electrode with the coating obtained using prolonged heat treatment step.

  18. Improvement of reliability and power consumption for SnSb{sub 4} phase change film composited with Ga{sub 3}Sb{sub 7} by superlattice-like method

    SciTech Connect

    Hu, Yifeng; Zhai, Jiwei; Zeng, Huarong; Song, Sannian; Song, Zhitang

    2015-05-07

    Superlattice-like (SLL) SnSb{sub 4}/Ga{sub 3}Sb{sub 7} (SS/GS) thin films were investigated through in-situ film resistance measurement. The optical band gap was derived from the transmittance spectra by using a UV-visible-NIR (ultraviolet-visible-near infrared) spectrophotometer. Transmission electron microscopy was used to observe the micro-structure before and after annealing. Phase change memory cells based on the SLL [SS(3 nm)/GS(4.5 nm)]{sub 7} thin films were fabricated to test and verify the operation consumption and switching endurance. The scanning thermal microscopy was used to probe the nanoscale thermal property.

  19. High Light Absorption and Charge Separation Efficiency at Low Applied Voltage from Sb-Doped SnO2/BiVO4 Core/Shell Nanorod-Array Photoanodes.

    PubMed

    Zhou, Lite; Zhao, Chenqi; Giri, Binod; Allen, Patrick; Xu, Xiaowei; Joshi, Hrushikesh; Fan, Yangyang; Titova, Lyubov V; Rao, Pratap M

    2016-06-08

    BiVO4 has become the top-performing semiconductor among photoanodes for photoelectrochemical water oxidation. However, BiVO4 photoanodes are still limited to a fraction of the theoretically possible photocurrent at low applied voltages because of modest charge transport properties and a trade-off between light absorption and charge separation efficiencies. Here, we investigate photoanodes composed of thin layers of BiVO4 coated onto Sb-doped SnO2 (Sb:SnO2) nanorod-arrays (Sb:SnO2/BiVO4 NRAs) and demonstrate a high value for the product of light absorption and charge separation efficiencies (ηabs × ηsep) of ∼51% at an applied voltage of 0.6 V versus the reversible hydrogen electrode, as determined by integration of the quantum efficiency over the standard AM 1.5G spectrum. To the best of our knowledge, this is one of the highest ηabs × ηsep efficiencies achieved to date at this voltage for nanowire-core/BiVO4-shell photoanodes. Moreover, although WO3 has recently been extensively studied as a core nanowire material for core/shell BiVO4 photoanodes, the Sb:SnO2/BiVO4 NRAs generate larger photocurrents, especially at low applied voltages. In addition, we present control experiments on planar Sb:SnO2/BiVO4 and WO3/BiVO4 heterojunctions, which indicate that Sb:SnO2 is more favorable as a core material. These results indicate that integration of Sb:SnO2 nanorod cores with other successful strategies such as doping and coating with oxygen evolution catalysts can move the performance of BiVO4 and related semiconductors closer to their theoretical potential.

  20. Nanodopant-induced band modulation in AgPb(m)SbTe(2+m)-type thermoelectrics.

    PubMed

    Zhang, Yi; Ke, Xuezhi; Chen, Changfeng; Yang, Jihui; Kent, Paul R C

    2011-05-20

    The structure-property relation is a key outstanding problem in the study of nanocomposite materials. Here we elucidate the fundamental physics of nanodopants in thermoelectric nanocomposites XPb(m)YTe(2+m) (X = Ag, Na; Y = Sb, Bi). First-principles calculations unveil a sizable band-gap widening driven by nanodopant-induced lattice strain and a band split-off mainly caused by the spin-orbit interaction in nanodopant. Boltzmann transport calculations on PbTe with modified band mimicking nanodopant-induced modulations show significant but competing effects on high-temperature electron transport behavior. These results offer insights for understanding experimental findings and optimizing thermoelectric properties of narrow band-gap semiconductor nanocomposites.

  1. Characteristics of AgInSbTe-SiO2 nanocomposite thin film applied to nonvolatile floating gate memory devices.

    PubMed

    Chiang, Kuo-Chang; Hsieh, Tsung-Eong

    2010-10-22

    Nanocomposite thin films containing AgInSbTe (AIST) particles embedded in an SiO(2) matrix was prepared by sputtering deposition and its feasibility for nonvolatile floating gate memory (NFGM) was investigated. The sample subjected to a 400 °C annealing exhibited a distinct hysteresis memory window (ΔV(FB)) shift = 6.6 V and charge density = 5.2 × 10(12) cm(-2) after ± 8 V gate voltage sweep. Electrical measurement revealed the current transport is via the Schottky emission in low applied field and the space-charge-limited conduction mechanism in high applied field in the samples, regardless of their thermal history. Transmission electron microscopy and x-ray photoelectron spectroscopy indicated that the metallic Sb(2)Te nanocrystals (NCs) with diameters about 5-7 nm dispersed in a nanocomposite layer may serve as the discrete charge-storage traps for nonvolatile memory. Analytical results illustrate the utilization of an AIST-SiO(2) nanocomposite layer as the core structure of NFGM devices is able to simplify the device structure and fabrication process.

  2. Effect of cooling condition and Ag on the growth of intermetallic compounds in Sn-based solder joints

    NASA Astrophysics Data System (ADS)

    Ma, Haoran; Kunwar, Anil; Guo, Bingfeng; Sun, Junhao; Jiang, Chengrong; Wang, Yunpeng; Song, Xueguan; Zhao, Ning; Ma, Haitao

    2016-12-01

    The intermetallic compound growth in Sn/Cu and Sn-3.5Ag/Cu solder joints undergoing cooling has been in-situ observed using synchrotron radiation X-ray imaging technique. The overall thickness of intermetallic compound attained during cooling condition is dependent on the rates of Cu precipitation or deposition from the bulk solder and Cu diffusion from grain boundary at interface. Although the net increase in IMC thickness contributed predominantly by deposition kinetics is greater for air cooling than in furnace cooling from the start temperature of 300°C for the first 20 min, the former solidifies before 30 min and the latter stays in liquid state for 1 h due to slower cooling rate and attains a bigger IMC of size about 14.5 μm. In context of Sn-3.5Ag solders subjected to air cooling from 275°C, the presence of Ag contributes to the increment in overall IMC thickness during the cooling period. For the improvement in solder joints reliability, faster cooling rate and limiting the Ag content can be employed as the materials design and processing parameters.

  3. Microstructural behavior of iron and bismuth added Sn-1Ag-Cu solder under elevated temperature aging

    NASA Astrophysics Data System (ADS)

    Ali, Bakhtiar; Sabri, Mohd Faizul Mohd; Jauhari, Iswadi

    2016-07-01

    An extensive study was done to investigate the microstructural behavior of iron (Fe) and bismuth (Bi) added Sn-1Ag-0.5Cu (SAC105) under severe thermal aging conditions. The isothermal aging was done at 200 °C for 100 h, 200 h, and 300 h. Optical microscopy with cross-polarized light revealed that the grain size significantly reduces with Fe/Bi addition to the base alloy SAC105 and remains literally the same after thermal aging. The micrographs of field emission scanning electron microscopy (FESEM) with backscattered electron detector and their further analysis via imageJ software indicated that Fe/Bi added SAC105 showed a significant reduction in the IMCs size (Ag3Sn and Cu6Sn5), especially the Cu6Sn5 IMCs, as well as β-Sn matrix and a refinement in the microstructure, which is due to the presence of Bi in the alloys. Moreover, their microstructure remains much more stable under severe thermal aging conditions, which is because of the presence of both Fe and Bi in the alloy. The microstructural behavior suggests that Fe/Bi modified SAC105 would have much improved reliability under severe thermal environments. These modified alloys also have relatively low melting temperature and low cost.

  4. Effect of Aluminum Concentration on the Interfacial Reactions of Sn-3.0Ag- xAl Solders with Copper and ENIG Metallizations

    NASA Astrophysics Data System (ADS)

    Xia, Y. H.; Jee, Y. K.; Yu, J.; Lee, T. Y.

    2008-12-01

    Aluminum was added into Sn-3.0Ag (wt.%) solder to investigate the effect of aluminum concentration on the interfacial reaction of Sn-3.0Ag- xAl solders with copper or electroless nickel immersion gold (ENIG) metallizations. Four different Sn-3.0Ag- xAl solders ( x = 0 wt.%, 0.1 wt.%, 0.5 wt.%, and 1.0 wt.%) were used for comparison. It was found that the composition, morphology, and thickness of interfacial reaction products were strongly dependent on aluminum concentration. At low aluminum concentration (0.1 wt.%), the typical Cu6Sn5 layer was formed at the interface. When the aluminum concentration was 0.5 wt.%, a continuous CuAl2 layer spalled off from the interfacial Cu-Sn intermetallic compound (IMC) layer. Only a planar CuAl2 layer was observed at the interface when the aluminum concentration was increased to 1.0 wt.%. In Sn-Ag-Al/ENIG reactions, Ni3Sn4 was formed and spallation occurred near the interface in the Sn-3.0Ag and Sn-3.0Ag-0.1Al solder joints. When the aluminum concentration was higher than 0.1 wt.%, a thin planar AuAl compound formed at the interface. There was no P-rich phase formation that retarded the spalling phenomenon. The aluminum additive in Sn-Ag solder inhibited the growth of IMCs in the reaction with copper or ENIG metallizations, which was favorable for the reliability of solder joints.

  5. Wetting Behavior in Ultrasonic Vibration-Assisted Brazing of Aluminum to Graphite Using Sn-Ag-Ti Active Solder

    NASA Astrophysics Data System (ADS)

    Yu, Wei-Yuan; Liu, Sen-Hui; Liu, Xin-Ya; Shao, Jia-Lin; Liu, Min-Pen

    2015-03-01

    In this study, Sn-Ag-Ti ternary alloy has been used as the active solder to braze pure aluminum and graphite in atmospheric conditions using ultrasonic vibration as an aid. The authors studied the formation, composition and decomposition temperature of the surface oxides of the active solder under atmospheric conditions. In addition, the wettability of Sn-5Ag-8Ti active solder on the surface of pure aluminum and graphite has also been studied. The results showed that the major components presented in the surface oxides formed on the Sn-5Ag-8Ti active solder under ambient conditions are TiO, TiO2, Ti2O3, Ti3O5 and SnO2. Apart from AgO and Ag2O2, which can be decomposed at the brazing temperature (773 K), other oxides will not be decomposed. The oxide layer comprises composite oxides and it forms a compact layer with a certain thickness to enclose the melted solder, which will prevent the liquid solder from wetting the base metals at the brazing temperature. After ultrasonic vibration, the oxide layer was destroyed and the liquid solder was able to wet and spread out around the base materials. Furthermore, better wettability of the active solder was observed on the surface of graphite and pure aluminum at the brazing temperature of 773-823 K using ultrasonic waves. The ultrasonic wave acts as the dominant driving factor which promotes the wetting and spreading of the liquid solder on the surface of graphite and aluminum to achieve a stable and reliable brazed joint.

  6. Enhancement of visible light activity in Ag modified SnO{sub 2}/TiO{sub 2}

    SciTech Connect

    Zhou, Xiufeng; Cao, Jialei; Xu, Mengfei; Wang, Zuoshan; Lu, Juan

    2013-11-15

    Graphical abstract: - Highlights: • Ag modified SnO{sub 2}/TiO{sub 2} nanoparticles were synthesized by a modified sol–gel method. • As-prepared samples have a small and uniform particle size of about 20 nm. • As-prepared samples exhibit an excellent photo-catalytic efficiency on the degradation of MB. • As-prepared samples maintain high photo-chemical stability after 5 catalytic cycles. - Abstract: Ag modified SnO{sub 2}/TiO{sub 2} nanoparticles were successfully prepared by a modified sol–gel method, without adding any acid or alkali. The entire preparation differs from the traditional sol–gel synthesis of TiO{sub 2} that the reaction can get controlled by adjusting the flow speed of water vapor. Ultraviolet–visible diffuse reflectance spectra (UV–vis) and spin-trapping electron paramagnetic resonance (EPR) were used to forecast the photocatalytic activity of the samples, and the results were proved by the degradation of methylene blue solution under visible light. Compared with pure TiO{sub 2}, as-prepared Ag modified SnO{sub 2}/TiO{sub 2} nanoparticles exhibited not only an enhanced photocatalytic activity but also an improved stability. Among all of samples, the composite with 0.5% of Ag and 1% of Sn showed the best photocatalytic performance and stability. Further increasing the Ag proportion will result in the decrease of the photocatalytic activity. A relative mechanism was proposed and discussed in detail.

  7. XPS, TDS, and AFM studies of surface chemistry and morphology of Ag-covered L-CVD SnO2 nanolayers.

    PubMed

    Kwoka, Monika; Ottaviano, Luca; Koscielniak, Piotr; Szuber, Jacek

    2014-01-01

    This is well known that the selectivity and sensitivity of tin dioxide (SnO2) thin film sensors for the detection of low concentration of volatile sulfides such as H2S in air can be improved by small amount of Ag additives. In this paper we present the results of comparative X-ray photoelectron spectroscopy (XPS), thermal desorption spectroscopy (TDS), and atomic force microscopy (AFM) studies of the surface chemistry and morphology of SnO2 nanolayers obtained by laser-enhanced chemical vapor deposition (L-CVD) additionally covered with 1 monolayer (ML) of Ag. For as deposited SnO2 nanolayers, a mixture of tin oxide (SnO) and tin dioxide (SnO2) with the [C]/[Sn] ratio of approximately 1.3 was observed. After dry air exposure, the [O]/[Sn] ratio slightly increased to approximately 1.55. Moreover, an evident increasing of C contamination was observed with [C]/[Sn] ratio of approximately 3.5. After TDS experiment, the [O]/[Sn] ratio goes back to 1.3, whereas C contamination evidently decreases (by factor of 3). Simultaneously, the Ag concentration after air exposure and TDS experiment subsequently decreased (finally by factor of approximately 2), which was caused by the diffusion of Ag atoms into the subsurface layers related to the grain-type surface morphology of Ag-covered L-CVD SnO2 nanolayers, as confirmed by XPS ion depth profiling studies. The variation of surface chemistry of the Ag-covered L-CVD SnO2 after air exposure observed by XPS was in a good correlation with the desorption of residual gases from these nanolayers observed in TDS experiments.

  8. XPS, TDS, and AFM studies of surface chemistry and morphology of Ag-covered L-CVD SnO2 nanolayers

    PubMed Central

    2014-01-01

    This is well known that the selectivity and sensitivity of tin dioxide (SnO2) thin film sensors for the detection of low concentration of volatile sulfides such as H2S in air can be improved by small amount of Ag additives. In this paper we present the results of comparative X-ray photoelectron spectroscopy (XPS), thermal desorption spectroscopy (TDS), and atomic force microscopy (AFM) studies of the surface chemistry and morphology of SnO2 nanolayers obtained by laser-enhanced chemical vapor deposition (L-CVD) additionally covered with 1 monolayer (ML) of Ag. For as deposited SnO2 nanolayers, a mixture of tin oxide (SnO) and tin dioxide (SnO2) with the [C]/[Sn] ratio of approximately 1.3 was observed. After dry air exposure, the [O]/[Sn] ratio slightly increased to approximately 1.55. Moreover, an evident increasing of C contamination was observed with [C]/[Sn] ratio of approximately 3.5. After TDS experiment, the [O]/[Sn] ratio goes back to 1.3, whereas C contamination evidently decreases (by factor of 3). Simultaneously, the Ag concentration after air exposure and TDS experiment subsequently decreased (finally by factor of approximately 2), which was caused by the diffusion of Ag atoms into the subsurface layers related to the grain-type surface morphology of Ag-covered L-CVD SnO2 nanolayers, as confirmed by XPS ion depth profiling studies. The variation of surface chemistry of the Ag-covered L-CVD SnO2 after air exposure observed by XPS was in a good correlation with the desorption of residual gases from these nanolayers observed in TDS experiments. PMID:24936162

  9. Linear and non-linear optical properties of Ag-doped Ge2Sb2Te5 thin films estimated by single transmission spectra

    NASA Astrophysics Data System (ADS)

    Singh, Palwinder; Sharma, Pankaj; Sharma, Vineet; Thakur, Anup

    2017-04-01

    In this paper we have studied the effect of Ag addition on linear and non-linear optical properties of thermally evaporated (Ge2Sb2Te5)100‑x Ag x (x = 0, 1, 3 and 10) thin films (thickness ∼700 nm) from single transmission spectra. Energy dispersive spectroscopy, x-ray diffraction and Raman spectroscopy were used to verify the composition, amorphous nature and structure of the fabricated thin films respectively. Swanpoel’s method was used to calculate the thickness (d), refractive index (n) and extinction coefficient (k). The refractive index and extinction coefficient were used to obtain all linear and non linear optical parameters. The compositional dependence of the refractive index, extinction coefficient, volume energy loss function, surface energy loss function, dielectric constant, dielectric loss function, optical conductivity and third order non-linear optical susceptibility were determined. All these optical parameters have minimum values for 3% Ag-doped Ge2Sb2Te5 (GST). The decrease in measured optical parameters up to 3% Ag doping is due to a decrease in the density of localized states in the mobility gap. The increase in the optical parameters at 10% Ag doping was ascribed to the distortion of the host lattice, because incorporation of Ag has been done at the expense of Ge, Sb and Te. The optical parameters of the GST films were found to be strongly dependent upon Ag content. The results revealed that 3% Ag-doped GST is a promising candidate for phase change optical storage applications.

  10. Effect of Solder-Joint Geometry on the Low-Cycle Fatigue Behavior of Sn- xAg-0.7Cu

    NASA Astrophysics Data System (ADS)

    Lee, Hwa-Teng; Huang, Kuo-Chen

    2016-12-01

    Low-cycle fatigue tests of Sn-Ag-Cu (SAC) Pb-free solder joints under fixed displacement were performed to evaluate the influence of Ag content (0-3 wt.%) and solder-joint geometry (barrel and hourglass types) on solder-joint fatigue behavior and reliability. The solder joints were composed of fine particles of Ag3Sn and Cu6Sn5, which aggregated as an eutectic constituent at grain boundaries of the primary β-Sn phase and formed a dense network structure. A decrease in the Ag content resulted in coarsening of the β-Sn and eutectic phases, which, in turn, decreased the strength of the joint and caused earlier failure. Solder joints in the hourglass form exhibited better fatigue performance with longer life than barrel-type joints. The sharp contact angle formed between the solder and the Cu substrate by the barrel-type joints concentrated stress, which compromised fatigue reliability. The addition of Ag to the solder, however, enhanced fatigue performance because of strengthening caused by Ag3Sn formation. The cracks of the barrel-type SAC solder joints originated mostly at the contact corner and propagated along the interfacial layer between the interfacial intermetallic compound (IMC) and solder matrix. Hourglass-type solder joints, however, demonstrated both crack initiation and propagation in the solder matrix (solder mode). The addition of 1.5-2.0 wt.% Ag to SAC solder appears to enhance the fatigue performance of solder joints while maintaining sufficient strength.

  11. From Ag{sub 2}Sb{sub 2}O{sub 6} to Cd{sub 2}Sb{sub 2}O{sub 7}: Investigations on an anion-deficient to ideal pyrochlore solid solution

    SciTech Connect

    Laurita, Geneva; Vielma, Jason; Winter, Florian; Berthelot, Romain; Largeteau, Alain; Pöttgen, Rainer; Schneider, G.; Subramanian, M.A.

    2014-02-15

    A complete solid solution between the anion-deficient pyrochlore Ag{sub 2}Sb{sub 2}O{sub 6} and the ideal pyrochlore Cd{sub 2}Sb{sub 2}O{sub 7} has been synthesized through the standard solid state ceramic method. Each composition has been characterized by various different techniques, including powder X-ray diffraction, optical spectroscopy, electron paramagnetic resonance and {sup 121}Sb Mössbauer spectroscopy. Computational methods based on density functional theory complement this investigation. Photocatalytic activity has been studied, and transport properties have been measured on pellets densified by spark plasma sintering. The analysis of the data collected from these various techniques enables a comprehensive characterization of the complete solid solution and revealed an anomalous behavior in the Cd-rich end of the solid solution, which has been proposed to arise from a possible radical O{sup −} species in small concentrations. - Graphical abstract: A complete solid solution between the anion-deficient pyrochlore Ag{sub 2}Sb{sub 2}O{sub 6} and the ideal pyrochlore Cd{sub 2}Sb{sub 2}O{sub 7} has been synthesized and investigated through various techniques including X-ray diffraction, electron paramagnetic spectroscopy, and {sup 121}Sb-Mössbauer spectroscopy. Optical and electrical measurements have been performed, and computational methods have been applied to determine the density of states. Photocatalytic activity was monitored by the degradation of Methylene Blue, and upon cadmium substitution, the degradation amount decreased, which is attributed primarily to the changing optical and electrical properties of the solid solution. Display Omitted - Highlights: • A complete solid solution between Ag{sub 2}Sb{sub 2}O{sub 6} and Cd{sub 2}Sb{sub 2}O{sub 7} has been synthesized. • XRD reveals a relatively constant lattice parameter as the series progresses. • Optical and electrical properties have been measured for the solid solution.

  12. Formation of medical radioisotopes {sup 111}In, {sup 117m}Sn, {sup 124}Sb, and {sup 177}Lu in photonuclear reactions

    SciTech Connect

    Danagulyan, A. S.; Hovhannisyan, G. H. Bakhshiyan, T. M.; Avagyan, R. H.; Avetisyan, A. E.; Kerobyan, I. A.; Dallakyan, R. K.

    2015-06-15

    The possibility of the photonuclear production of radioisotopes {sup 111}In, {sup 117m}Sn, {sup 124}Sb, and {sup 177}Lu is discussed. Reaction yields were measured by the gamma-activation method. The enriched tin isotopes {sup 112,} {sup 118}Sn and Te and HfO{sub 2} of natural isotopic composition were used as targets. The targets were irradiated at the linear electron accelerator of Alikhanian National Science Laboratory (Yerevan) at the energy of 40 MeV. The experimental results obtained in this way reveal that the yield and purity of radioisotopes {sup 111}In and {sup 117}mSn are acceptable for their production via photonuclear reactions. Reactions proceeding on targets from Te and HfO{sub 2} of natural isotopic composition and leading to the formation of {sup 124}Sb and {sup 177}Lu have small yields and are hardly appropriate for the photoproduction of these radioisotopes even in the case of enriched targets.

  13. Relationship between morphologies and orientations of Cu{sub 6}Sn{sub 5} grains in Sn3.0Ag0.5Cu solder joints on different Cu pads

    SciTech Connect

    Tian, Yanhong Zhang, Rui; Hang, Chunjin; Niu, Lina; Wang, Chunqing

    2014-02-15

    The morphologies and orientations of Cu{sub 6}Sn{sub 5} intermetallic compounds in the Sn3.0Ag0.5Cu solder joints both on polycrystalline and single crystal Cu pads under different peak reflow temperatures and times above liquids were investigated. The relationship between Cu{sub 6}Sn{sub 5} grain orientations and morphologies was clarified. At the interface of Sn3.0Ag0.5Cu/polycrystalline Cu pad, scalloped Cu{sub 6}Sn{sub 5} intermetallic compounds formed at 250 °C and roof shape Cu{sub 6}Sn{sub 5} formed at 300 °C. Both scalloped Cu{sub 6}Sn{sub 5} and roof shape Cu{sub 6}Sn{sub 5} had a preferred orientation of (0001) plane being parallel to polycrystalline Cu pad surface. Besides, the percentage of large angle grain boundaries increased as the peak reflow temperature rose. At the interface of Sn3.0Ag0.5Cu/(111) single crystal Cu pad, the Cu{sub 6}Sn{sub 5} intermetallic compounds were mainly scallop-type at 250 °C and were prism type at 300 °C. The prismatic Cu{sub 6}Sn{sub 5} grains grew along the three preferred directions with the inter-angles of 60° on (111) single crystal Cu pad while along two perpendicular directions on (100) single crystal Cu pad. The orientation relationship between Cu{sub 6}Sn{sub 5} grains and the single crystal Cu pads was investigated by electron backscatter diffraction technology. In addition, two types of hollowed Cu{sub 6}Sn{sub 5} intermetallic compounds were found inside the joints of polycrystalline Cu pads. The long hexagonal Cu{sub 6}Sn{sub 5} strips were observed in the joints reflowing at 250 °C while the hollowed Cu{sub 6}Sn{sub 5} strips with the ‘▪’ shape cross-sections appeared at 300 °C, which was attributed to the different grain growth rates of different Cu{sub 6}Sn{sub 5} crystal faces. - Highlights: • The orientation of interfacial Cu{sub 6}Sn{sub 5} grains was obtained by EBSD technology. • Two types of hollowed Cu{sub 6}Sn{sub 5} strips were found at different temperatures. • The formation

  14. Effect of Ag on the Microstructure of Sn-8.5Zn- xAg-0.01Al-0.1Ga Solders Under High-Temperature and High-Humidity Conditions

    NASA Astrophysics Data System (ADS)

    Yeh, T. K.; Lin, K. L.; Mohanty, U. S.

    2013-04-01

    The effect of Ag on the microstructure and thermal behavior of Sn-Zn and Sn-8.5Zn- xAg-0.01Al-0.1Ga solders ( x from 0.1 wt.% to 1 wt.%) under high-temperature/relative humidity conditions (85°C/85% RH) for various exposure times was investigated. Scanning electron microscopy (SEM) studies revealed that, in all the investigated solders, the primary α-Zn phases were surrounded by eutectic β-Sn/α-Zn phases, in which fine Zn platelets were dispersed in the β-Sn matrix. SEM micrographs revealed that increase of the Ag content to 1 wt.% resulted in coarsening of the dendritic plates and diminished the Sn-9Zn eutectic phase in the microstructure. Differential scanning calorimetry (DSC) studies revealed that the melting temperature of Sn-8.5Zn- xAg-0.01Al-0.1Ga solder decreased from 199.6°C to 199.2°C with increase of the Ag content in the solder alloy. Both ZnO and SnO2 along with Ag-Zn intermetallic compound (IMC) were formed on the surface when Sn-8.5Zn-0.5Ag-0.01Al-0.1Ga solder was exposed to high-temperature/high-humidity conditions (85°C/85% RH) for 100 h. The thickness of the ZnO phase increased as the Ag content and exposure time were increased. Sn whiskers of various shapes and lengths varying from 2 μm to 5 μm were extruded from the surface when the investigated five-element solder with Ag content varying from 0.5 wt.% to 1 wt.% was exposed to similar temperature/humidity conditions for 250 h. The length and density of the whiskers increased with further increase of the exposure time to 500 h and the Ag content in the solder to 1 wt.%. The Sn whisker growth was driven by the compressive stress in the solder, which was generated due to the volume expansion caused by ZnO and Ag-Zn intermetallic compound formation at the grain boundaries of Sn.

  15. A first-principles study of the electronic and structural properties of Sb and F doped SnO{sub 2} nanocrystals

    SciTech Connect

    Kim, Minjung; Scott Bobbitt, N.; Marom, Noa; Chelikowsky, James R.

    2015-01-28

    We examine the electronic properties of Sb and F doped SnO{sub 2} nanocrystals up to 2.4 nm in diameter. A real-space pseudopotential implementation of density functional theory is employed within the local density approximation. We calculate electron binding energies and dopant formation energies as function of nanocrystal size, dopant concentration, and dopant species. Structural changes for different dopant species are also investigated. Our study should provide useful information for the design of transparent conducting oxides at the nanoscale.

  16. The analysis of the withdrawal force curve of the wetting curve using 63Sn-37Pb and 96.5Sn-3.5Ag eutectic solders

    NASA Astrophysics Data System (ADS)

    Park, Jae Yong; Kang, Choon Sik; Jung, Jae Pil

    1999-11-01

    To analyze the withdrawal force curve in the wetting balance curve, wetting balance tests using the 63Sn-37Pb and 96.5Sn-3.6Ag eutectic solders were conducted by varying the immersion speed, sample perimeter, and solder temperature. The mechanism of the withdrawal force curve was reviewed and a new method for calculating the surface tension of solders using the withdrawal force curve was introduced. The results showed that the maximum point of the withdrawal force curve is generated when the sliding solder meets the bottom corners of a sample and the contact angle is reduced to zero. The maximum withdrawal force subtracted by end force can be expressed using force balance equation as F=pγ. Therefore, the surface tension of the solder can be calculated by dividing the maximum withdrawal force by the sample parameter.

  17. Effect of Graphene Nanoplatelets on Wetting, Microstructure, and Tensile Characteristics of Sn-3.0Ag-0.5Cu (SAC) Alloy

    NASA Astrophysics Data System (ADS)

    Sharma, Ashutosh; Sohn, Heung-Rak; Jung, Jae Pil

    2016-01-01

    The effect of graphene nanoplatelets (GNPs) on the wettability, microstructure, and tensile properties of Sn-3.0Ag-0.5Cu (SAC 305) was studied using melting and casting route. The microstructure of the bulk solder is observed with a scanning electron microscope and transmission electron microscope, and the intermetallic compound (IMC) phases are identified by electron probe micro-analyzer. The solderability of the samples is assessed by spreading and wetting tests on a Cu substrate. The experimental results indicate that an addition of 0.05 wt pct GNPs in Sn-3Ag-0.5Cu solder improves the spreading and wettability significantly compared to monolithic SAC. It is also revealed that the thickness of the Ag3Sn IMCs is reduced as compared to the monolithic SAC alloy. Tensile results show that the composite solder exhibits the 13.9 pct elongation and 17 pct increase in the ultimate tensile strength when 0.05 wt pct GNPs in Sn-3Ag-0.5Cu alloy are added. This may be due to the refinement of the IMCs in composite solders compared to the same in Sn-3Ag-0.5Cu alloy brought about by the uniform dispersion of graphene nanoplatelets. It is suggested in this study that the amount of GNPs in Sn-3Ag-0.5Cu alloy should not exceed 0.05 wt pct as it may degrade the desired properties due to the agglomeration of GNPs.

  18. Effective Thermal and Electrical Conductivities of AgSnO2 During Sintering. Part II: Constitutive Modeling and Numerical Simulation

    NASA Astrophysics Data System (ADS)

    Brisson, Elodie; Desplats, Henri; Carre, Patrick; Keryvin, Vincent; Rogeon, Philippe; Feulvarch, Eric; Bonhomme, Alexandre

    2016-12-01

    During resistance sintering (RS) of a conductive porous material, effective electrical and thermal conductivities have a great influence on the thermal gradients inside the matter, which could induce heterogeneous microstructures. Part I of this investigation focused on the characterization of the effective conductivities of AgSnO2 during sintering conditions, with the understanding of the relations between their evolutions and the microstructure. In Part II, the emphasis is on the development of appropriate constitutive equations able to describe the evolutions of the effective conductivities of AgSnO2 during RS. This work proposes constitutive equations taking into account the two main mechanisms, identified in Part I, which modify the contact conditions between the particles. The first mechanism corresponds to viscoplastic deformations of particles. A creep behavior law is used to calculate the macroscopic deformation and the densification kinetics. The second one deals with bonding diffusion under the effect of temperature, which decreases the contact resistance between the particles. As no specific effect of current has been highlighted in the case of AgSnO2, the effective conductivities' behavior laws are available for RS and for hot pressing (HP). Relationships for effective conductivities are included in the numerical HP model and combined with governing laws. Finite element analyses are compared to experimental results obtained from HP tests to validate and discuss the model.

  19. Effective Thermal and Electrical Conductivities of AgSnO2 During Sintering. Part I: Experimental Characterization and Mechanisms

    NASA Astrophysics Data System (ADS)

    Brisson, Elodie; Carre, Patrick; Desplats, Henri; Rogeon, Philippe; Keryvin, Vincent; Bonhomme, Alexandre

    2016-12-01

    The effective thermal and electrical conductivities of porous materials have a major influence on the temperature field inside the sample during resistance sintering (RS). Thermal and electrical effective conductivities of AgSnO2 can be calculated during sintering by using numerical modeling with constitutive equations, which consider microstructural transformations. In Part I of this investigation, the emphasis is on the development of an understanding of the microstructure-conductivity relationship starting from the "green" state to the fully sintered state during RS of AgSnO2. This work focuses on the characterization of the electrical and thermal effective conductivities of the porous composite material (AgSnO2), and on highlighting the mechanisms, which drive the evolutions of the effective conductivities and the microstructure. Measurements were achieved under different loadings (cold compaction, free sintering, Hot Pressing (HP), and RS). Results show that conductivities evolutions are mainly driven by the contact conditions between particles. Bonding diffusion between particles and grain deformation was identified as the main mechanism, which can enhance the contact area between particles. This work will provide all the essential information to define the constitutive equations, presented in details in Part II, to describe the evolutions of the effective conductivities during sintering processes, such as RS or HP.

  20. Thermoelectric performance of nanostructured p-type Zr₀.₅Hf₀.₅Co₀.₄Rh₀.₆Sb1–xSnxhalf-Heusler alloys

    SciTech Connect

    Maji, Pramathesh; Makongo, Julien P.A.; Zhou, Xiaoyuan; Chi, Hang; Uher, Ctirad; Poudeu, Pierre F.P.

    2013-06-01

    Several compositions of the p-type half-Heusler alloys Zr₀.₅Hf₀.₅Co₀.₄Rh₀.₆Sb1–xSnx (0≤x≤0.4) were synthesized by mechanically alloying high purity elemental powders using hardened steel jars and balls on a high energy shaker mill. Powder X-ray diffraction (XRD) investigations of several aliquots taken after regularly spaced milling time suggested that single phase products with half-Heusler (HH) structure can be obtained after 10 h. However, XRD and transmission electron microscopy (TEM) studies of several specimens obtained from compacted polycrystalline powders of Z₀.₅Hf₀.₅Co₀.₄Rh₀.₆Sb1–xSnx alloys using a uniaxial hot press (HP) revealed the presence of CoSb inclusions with various sizes embedded inside the HH matrix. Hall effect, electrical conductivity, and thermopower data collected between 300 K and 775 K on several compositions suggested that electronic transport in the synthesized Zr₀.₅Hf₀.₅Co₀.₄Rh₀.₆Sb1–xSnx/CoSb composites strongly depends on the average size and/or mole fraction of the embedded CoSb inclusions rather than the fraction (x) of Sn substituting for Sb. Among the samples investigated, the nanocomposite with x=0.2, which contains nanometer-scale CoSb inclusions, showed the largest power factor (800 μW/K² m at 775 K) and the lowest lattice thermal conductivity (~2.2 W/m K at 775 K) leading to a six-fold enhancement in the figure of merit when compared to the Zr₀.₅Hf₀.₅Co₀.₄Rh₀.₆Sb₀.₉₉Sn₀.₀₁ bulk matrix. - Graphical abstract: CoSb nanoinclusions embedded into a p-type Zr₀.₅Hf₀.₅Co₀.₄Rh₀.₆Sb1–xSnx half-Heusler matrix simultaneously boost the thermopower and carrier mobility leading to a drastic enhancement of the power factor of the resulting bulk nanostructured materials. Highlights: • The phase composition of half-Heusler (HH) alloy is very sensitive

  1. Creep deformation behavior of Sn-3.5Ag solder/Cu couple at small length scales

    SciTech Connect

    Kerr, M.; Chawla, N

    2004-09-06

    In order to adequately characterize the behavior of solder balls in electronic devices, the mechanical behavior of solder joints needs to be studied at small length scales. The creep behavior of single solder ball Sn-Ag/Cu solder joints was studied in shear, at 25, 60, 95, and 130 deg. C, using a microforce testing system. A change in the creep stress exponent with increasing stress was observed and explained in terms of a threshold stress for bypass of Ag{sub 3}Sn particles by dislocations. The stress exponent was also temperature dependent, exhibiting an increase in exponent of two from lower to higher temperature. The activation energy for creep was found to be temperature dependant, correlating with self-diffusion of pure Sn at high temperatures, and dislocation core diffusion of pure Sn at lower temperatures. Normalizing the creep rate for activation energy and the temperature-dependence of shear modulus allowed for unification of the creep data. Microstructure characterization, including preliminary TEM analysis, and fractographic analysis were conducted in order to fully describe the creep behavior of the material.

  2. The Role of Annealing Process in Ag-Based BaSnO3 Multilayer Thin Films.

    PubMed

    Wu, Muying; Yu, Shihui; He, Lin; Yang, Lei; Zhang, Weifeng

    2016-12-01

    The BaSnO3/Ag/BaSnO3 multilayer structure was designed and fabricated on a quartz glass by magnetron sputtering, followed by an annealing process at a temperature from 150 to 750 °C in air. In this paper, we investigated the influence of the annealing temperature on the structural, optical, and electrical properties of the multilayers and proposed the mechanisms of conduction and transmittance. The maximum value of the figure of merit of 31.8 × 10(-3) Ω(-1) was achieved for the BaSnO3/Ag/BaSnO3 multilayer thin films annealed at 150 °C, while the average optical transmittance in the visible ranges was >84 %, the resistivity was 5.71 × 10(-5) Ω cm, and the sheet resistance was 5.57 Ω/sq. When annealed at below 600 °C, the values of resistivity and transmittance of the multilayers were within an acceptable range (resistivity <5.0 × 10(-4) Ω cm, transmittance >80 %). The observed property of the multilayer film is suitable for the application of transparent conductive electrodes.

  3. Quaternary Heusler compounds Co(2-x)Rh(x)MnZ (Z = Ga, Sn, Sb): crystal structure, electronic structure, and magnetic properties.

    PubMed

    Alijani, Vajiheh; Winterlik, Juergen; Fecher, Gerhard H; Naghavi, S Shahab; Chadov, Stanislav; Gruhn, Thomas; Felser, Claudia

    2012-02-01

    Within the huge family of Heusler compounds only a few quaternary derivatives are known that crystallize in the F43m space group. In this work, the yet unreported compounds CoRhMnZ (Z = Ga, Sn, Sb) and the alloy Co(0.5)Rh(1.5)MnSb were investigated in detail by experimental techniques and theoretical methods. The ab initio calculations predict the CoRhMnZ compounds to be half-metallic ferromagnets or to be close to the half-metallic ferromagnetic state. Calculations of the elastic constants show that the cubic structure is stable in compounds containing Mn. Both calculations and experiment reveal that Mn cannot be exchanged by Fe (CoRhFeGa). The low temperature magnetization of the compounds is in the range of 3.4-5.5 μ(B) depending on the composition. The best agreement between experiment and calculation has been achieved for CoRhMnSn (5 μ(B)). The other compounds are also cubic but tend to anti-site disorder. Compared to Co(2)MnSn it is interesting to note that the magnetic properties and half-metallicity are preserved when replacing one of the 'magnetic' Co atoms by a 'non-magnetic' Rh atom. This allows us to increase the spin-orbit interaction at one of the lattice sites while keeping the properties as a precondition for applications and physical effects relying on a large spin-orbit interaction. The Curie temperatures were determined from measurements in induction fields of up to 1 T by applying molecular field fits respecting the applied field. The highest Curie temperature was found for CoRhMnSn (620 K) that makes it, together with the other well defined properties, attractive for above room temperature spintronic applications.

  4. Enhanced photodegradation activity of methyl orange over Ag{sub 2}CrO{sub 4}/SnS{sub 2} composites under visible light irradiation

    SciTech Connect

    Luo, Jin Zhou, Xiaosong; Ma, Lin; Xu, Xuyao; Wu, Jingxia; Liang, Huiping

    2016-05-15

    Highlights: • Novel visible-light-driven Ag{sub 2}CrO{sub 4}/SnS{sub 2} composites are synthesized. • Ag{sub 2}CrO{sub 4}/SnS{sub 2} exhibits higher photocatalytic activity than pure Ag{sub 2}CrO{sub 4} and SnS{sub 2}. • Ag{sub 2}CrO{sub 4}/SnS{sub 2} exhibits excellent stability for the photodegradation of MO. • The possible photocatalytic mechanism was discussed in detail. - Abstract: Novel Ag{sub 2}CrO{sub 4}/SnS{sub 2} composites were prepared by a simple chemical precipitation method and characterized by scanning electron microscopy, transmission electron microscopy, X-ray diffraction, X-ray photoelectron spectroscopy, UV–vis diffuse reflectance spectroscopy and photoluminescence spectroscopy. The visible light photocatalytic tests showed that the Ag{sub 2}CrO{sub 4}/SnS{sub 2} composites enhanced photocatalytic activities for the photodegradation of methyl orange (MO) under visible light irradiation (λ > 420 nm), and the optimum rate constant of Ag{sub 2}CrO{sub 4}/SnS{sub 2} at a weight content of 1.0% Ag{sub 2}CrO{sub 4} for the degradation of MO was 2.2 and 1.5 times larger than that of pure Ag{sub 2}CrO{sub 4} and SnS{sub 2}, respectively. The improved activity could be attributed to high separation efficiency of photogenerated electrons-hole pairs on the interface of Ag{sub 2}CrO{sub 4} and SnS{sub 2}, which arised from the synergistic effect between Ag{sub 2}CrO{sub 4} and SnS{sub 2}. Moreover, the possible photocatalytic mechanism with superoxide radical anions and holes species as the main reactive species in photocatalysis process was proposed on the basis of experimental results.

  5. Impact of 5% NaCl Salt Spray Pretreatment on the Long-Term Reliability of Wafer-Level Packages with Sn-Pb and Sn-Ag-Cu Solder Interconnects

    NASA Astrophysics Data System (ADS)

    Liu, Bo; Lee, Tae-Kyu; Liu, Kuo-Chuan

    2011-10-01

    Understanding the sensitivity of Pb-free solder joint reliability to various environmental conditions, such as corrosive gases, low temperatures, and high-humidity environments, is a critical topic in the deployment of Pb-free products in various markets and applications. The work reported herein concerns the impact of a marine environment on Sn-Pb and Sn-Ag-Cu interconnects. Both Sn-Pb and Sn-Ag-Cu solder alloy wafer-level packages, with and without pretreatment by 5% NaCl salt spray, were thermally cycled to failure. The salt spray test did not reduce the characteristic lifetime of the Sn-Pb solder joints, but it did reduce the lifetime of the Sn-Ag-Cu solder joints by over 43%. Although both materials showed strong resistance to corrosion, the localized nature of the corroded area at critical locations in the solder joint caused significant degradation in the Sn-Ag-Cu solder joints. The mechanisms leading to these results as well as the extent, microstructural evolution, and dependency of the solder alloy degradation are discussed.

  6. Fracture of Sn-Ag-Cu Solder Joints on Cu Substrates. II: Fracture Mechanism Map

    NASA Astrophysics Data System (ADS)

    Kumar, P.; Huang, Z.; Dutta, I.; Sidhu, R.; Renavikar, M.; Mahajan, R.

    2012-02-01

    A methodology to construct fracture mechanism maps for Sn-3.8%Ag-0.7%Cu (SAC387) solder joints attached to Cu substrates has been developed. The map, which delineates the operative mechanisms of fracture along with corresponding joint fracture toughness values, is plotted in a space described by two microstructure-dependent parameters, with the abscissa describing the interfacial intermetallic compound (IMC) and the ordinate representing the strain-rate-dependent solder yield strength. The plot space encompasses the three major mechanisms by which joints fail, namely (i) cohesive fracture of solder, (ii) cleavage fracture of interfacial intermetallic compounds (IMC), and (iii) fracture of the solder-IMC interface. Line contours of constant fracture toughness values, as well as constant fraction of each of the above mechanisms, are indicated on the plots. The plots are generated by experimentally quantifying the dependence of the operative fracture mechanism(s) on the two microstructure-dependent parameters (IMC geometry and solder yield strength) as functions of strain rate, reflow parameters, and post-reflow aging. Separate maps are presented for nominally mode I and equi-mixed mode loading conditions (loading angle ϕ = 0° and 45°, respectively). The maps allow rapid assessment of the operative fracture mechanism(s) along with estimation of the expected joint fracture toughness value for a given loading condition (strain rate and loading angle) and joint microstructure without conducting actual tests, and may serve as a tool for both prediction and microstructure design.

  7. An Evaluation of Prototype Circuit Boards Assembled with a Sn-Ag Bi Solder

    SciTech Connect

    ARTAKI,I.; RAY,U.; REJENT,JEROME A.; VIANCO,PAUL T.

    1999-09-01

    An evaluation was performed which examined the aging of surface mount solder joints assembled with 91.84Sn-3.33Ag-4.83Bi solder. Defect analysis of the as-fabricated test vehicles revealed excellent solderability, good package alignment, and a minimum number of voids. Continuous DC electrical monitoring of the solder joints did not reveal opens during as many as 10,000 thermal cycles (0 C, 100 C). The solder joints exhibited no significant degradation through 2500 cycles, based upon an absence of microstructural damage and sustained shear and pull strengths of chip capacitors and J-leaded solder joints, respectively. Thermal cycles of 5000 and 10,000 resulted in some surface cracking of the solder fillets and coatings. In a few cases, deeper cracks were observed in the thinner reaches of several solder fillets. There was no deformation or cracking in the solder located in the gap between the package I/O and the circuit board pad nor in the interior of the fillets, both locations that would raise concerns of joint mechanical integrity. A drop in the chip capacitor shear strength was attributed to crack growth near the top of the fillet.

  8. Low Sound Velocity Contributing to the High Thermoelectric Performance of Ag8SnSe6

    PubMed Central

    Li, Wen; Lin, Siqi; Ge, Binghui; Yang, Jiong; Zhang, Wenqing

    2016-01-01

    Conventional strategies for advancing thermoelectrics by minimizing the lattice thermal conductivity focus on phonon scattering for a short mean free path. Here, a design of slow phonon propagation as an effective approach for high‐performance thermoelectrics is shown. Taking Ag8SnSe6 as an example, which shows one of the lowest sound velocities among known thermoelectric semiconductors, the lattice thermal conductivity is found to be as low as 0.2 W m−1 K−1 in the entire temperature range. As a result, a peak thermoelectric figure of merit zT > 1.2 and an average zT as high as ≈0.8 are achieved in Nb‐doped materials, without relying on a high thermoelectric power factor. This work demonstrates not only a guiding principle of low sound velocity for minimal lattice thermal conductivity and therefore high zT, but also argyrodite compounds as promising thermoelectric materials with weak chemical bonds and heavy constituent elements. PMID:27980995

  9. Low Sound Velocity Contributing to the High Thermoelectric Performance of Ag8SnSe6.

    PubMed

    Li, Wen; Lin, Siqi; Ge, Binghui; Yang, Jiong; Zhang, Wenqing; Pei, Yanzhong

    2016-11-01

    Conventional strategies for advancing thermoelectrics by minimizing the lattice thermal conductivity focus on phonon scattering for a short mean free path. Here, a design of slow phonon propagation as an effective approach for high-performance thermoelectrics is shown. Taking Ag8SnSe6 as an example, which shows one of the lowest sound velocities among known thermoelectric semiconductors, the lattice thermal conductivity is found to be as low as 0.2 W m(-1) K(-1) in the entire temperature range. As a result, a peak thermoelectric figure of merit zT > 1.2 and an average zT as high as ≈0.8 are achieved in Nb-doped materials, without relying on a high thermoelectric power factor. This work demonstrates not only a guiding principle of low sound velocity for minimal lattice thermal conductivity and therefore high zT, but also argyrodite compounds as promising thermoelectric materials with weak chemical bonds and heavy constituent elements.

  10. Effect of 0.5 wt % Cu addition in Sn-3.5%Ag solder on the dissolution rate of Cu metallization

    NASA Astrophysics Data System (ADS)

    Alam, M. O.; Chan, Y. C.; Tu, K. N.

    2003-12-01

    The dissolution of thin film under-bump-metallization (UBM) by molten solder has been one of the most serious processing problems in electronic packaging technology. Due to a higher melting temperature and a greater Sn content, a molten lead-free solder such as eutectic SnAg has a faster dissolution rate of thin film UBM than the eutectic SnPb. The work presented in this paper focuses on the role of 0.5 wt % Cu in the base Sn-3.5%Ag solder to reduce the dissolution of the Cu bond pad in ball grid array applications. We found that after 0.5 wt % Cu addition, the rate of dissolution of Cu in the molten Sn-3.5%Ag solder slows down dramatically. Systematic experimental work was carried out to understand the dissolution behavior of Cu by the molten Sn-3.5%Ag and Sn-3.5%Ag-0.5%Cu solders at 230-250 °C, for different time periods ranging from 1 to 10 min. From the curves of consumed Cu thickness, it was concluded that 0.5 wt % Cu addition actually reduces the concentration gradient at the Cu metallization/molten solder interface which reduces the driving force of dissolution. During the dissolution, excess Cu was found to precipitate out due to heterogeneous nucleation and growth of Cu6Sn5 at the solder melt/oxide interface. In turn, more Cu can be dissolved again. This process continues with time and leads to more dissolution of Cu from the bond pad than the amount expected from the solubility limit, but it occurs at a slower rate for the molten Sn-3.5%Ag-0.5%Cu solder.

  11. High Power Factor and Enhanced Thermoelectric Performance of SnTe-AgInTe2: Synergistic Effect of Resonance Level and Valence Band Convergence.

    PubMed

    Banik, Ananya; Shenoy, U Sandhya; Saha, Sujoy; Waghmare, Umesh V; Biswas, Kanishka

    2016-10-05

    Understanding the basis of electronic transport and developing ideas to improve thermoelectric power factor are essential for production of efficient thermoelectric materials. Here, we report a significantly large thermoelectric power factor of ∼31.4 μW/cm·K(2) at 856 K in Ag and In co-doped SnTe (i.e., SnAgxInxTe1+2x). This is the highest power factor so far reported for SnTe-based material, which arises from the synergistic effects of Ag and In on the electronic structure and the improved electrical transport properties of SnTe. In and Ag play different but complementary roles in modifying the valence band structure of SnTe. In-doping introduces resonance levels inside the valence bands, leading to a significant improvement in the Seebeck coefficient at room temperature. On the other hand, Ag-doping reduces the energy separation between light- and heavy-hole valence bands by widening the principal band gap, which also results in an improved Seebeck coefficient. Additionally, Ag-doping in SnTe enhances the p-type carrier mobility. Co-doping of In and Ag in SnTe yields synergistically enhanced Seebeck coefficient and power factor over a broad temperature range because of the synergy of the introduction of resonance states and convergence of valence bands, which have been confirmed by first-principles density functional theory-based electronic structure calculations. As a consequence, we have achieved an improved thermoelectric figure of merit, zT ≈ 1, in SnAg0.025In0.025Te1.05 at 856 K.

  12. Undercooling Behavior and Intermetallic Compound Coalescence in Microscale Sn-3.0Ag-0.5Cu Solder Balls and Sn-3.0Ag-0.5Cu/Cu Joints

    NASA Astrophysics Data System (ADS)

    Zhou, M. B.; Ma, X.; Zhang, X. P.

    2012-11-01

    The microstructure of microscale solder interconnects and soldering defects have long been known to have a significant influence on the reliability of electronic packaging, and both are directly related to the solidification behavior of the undercooled solder. In this study, the undercooling behavior and solidification microstructural evolution of Sn-3.0Ag-0.5Cu solder balls with different diameters (0.76 mm, 0.50 mm, and 0.30 mm) and the joints formed by soldering these balls on Cu open pads of two diameters (0.48 mm and 0.32 mm) on a printed circuit board (PCB) substrate were characterized by differential scanning calorimetry (DSC) incorporated into the reflow process. Results show that the decrease in diameter of the solder balls leads to an obvious increase in the undercooling of the balls, while the undercooling of the solder joints shows a dependence on both the diameter of the solder balls and the diameter ratio of solder ball to Cu pad (i.e., D s/ D p), and the diameter of the solder balls has a stronger influence on the undercooling of the joints than the dimension of the Cu pad. Coarse primary intermetallic compound (IMC) solidification phases were formed in the smaller solder balls and joints. The bulk Ag3Sn IMC is the primary solidification phase in the as-reflowed solder balls. Due to the interfacial reaction and dissolution of Cu atoms into the solder matrix, the primary Ag3Sn phase can be suppressed and the bulk Cu6Sn5 IMC is the only primary solidification phase in the as-reflowed solder joints.

  13. Synthesis of Structurally Diverse 2,3-Fused Indoles via Microwave-Assisted AgSbF6-Catalysed Intramolecular Difunctionalization of o-Alkynylanilines

    NASA Astrophysics Data System (ADS)

    Huang, Yuanqiong; Yang, Yan; Song, Hongjian; Liu, Yuxiu; Wang, Qingmin

    2015-08-01

    2,3-Fused indoles are found in numerous natural products and drug molecules. Although several elegant methods for the synthesis of this structural motif have been reported, long reaction times and harsh conditions are sometimes required, and the yields tend to be low. Herein, we report a microwave method for straightforward access to various types of 2,3-fused indoles via AgSbF6-catalysed intramolecular difunctionalization of o-alkynylanilines. AgSbF6 played a role in both the hydroamination step and the imine-formation step. This method, which exhibited excellent chemoselectivity (no ring-fused 1,2-dihydroquinolines were formed), was used for formal syntheses of the natural products conolidine and ervaticine and the antihistamine drug latrepirdine.

  14. Synthesis of Structurally Diverse 2,3-Fused Indoles via Microwave-Assisted AgSbF6-Catalysed Intramolecular Difunctionalization of o-Alkynylanilines

    PubMed Central

    Huang, Yuanqiong; Yang, Yan; Song, Hongjian; Liu, Yuxiu; Wang, Qingmin

    2015-01-01

    2,3-Fused indoles are found in numerous natural products and drug molecules. Although several elegant methods for the synthesis of this structural motif have been reported, long reaction times and harsh conditions are sometimes required, and the yields tend to be low. Herein, we report a microwave method for straightforward access to various types of 2,3-fused indoles via AgSbF6-catalysed intramolecular difunctionalization of o-alkynylanilines. AgSbF6 played a role in both the hydroamination step and the imine-formation step. This method, which exhibited excellent chemoselectivity (no ring-fused 1,2-dihydroquinolines were formed), was used for formal syntheses of the natural products conolidine and ervaticine and the antihistamine drug latrepirdine. PMID:26310858

  15. Fast switching and low power of superlattice-like SnSe2/Sb thin films for phase change memory application

    NASA Astrophysics Data System (ADS)

    Wu, Weihua; He, Zifang; Chen, Shiyu; Zhai, Jiwei; Liu, Xinyi; Lai, Tianshu; Song, Sannian; Song, Zhitang

    2016-10-01

    Two non-promising phase change materials (SnSe2 and Sb) were prepared through the superlattice-like (SLL) method to explore the suitable phase change layer for phase change memory (PCM) application. The crystallization temperature, activation energy, and 10-year data retention of the SLL [SnSe2(10 nm)/Sb(2 nm)]4 ([SS(10)/S(2)]4) thin film are 185 °C, 3.03 eV, and 116 °C, respectively. The volume change of the SLL [SS(10)/S(2)]4 thin film during the crystallization is as small as 3.5%. The phase transition speed of the SLL [SS(10)/S(2)]4 thin film for crystallization is only about 11.9 ns. PCM cell based on the SLL [SS(10)/S(2)]4 thin film shows high operation speed (20 ns for SET/RESET) and lower power consumption (2.75 × 10-11 J for RESET operation).

  16. Synthesis of heteroboroxines with MB₂O₃ core (M = Sb, Bi, Sn)--an influence of the substitution of parent boronic acids.

    PubMed

    Kořenková, Monika; Mairychová, Barbora; Růžička, Aleš; Jambor, Roman; Dostál, Libor

    2014-05-21

    The synthesis and structure of stiba-, stanna- and bismaheteroboroxines of a general formula L(E)M[(OBR)2O] supported by a N,C,N-chelating ligand L [where L = C6H3-2,6-(CH2NMe2)2, M, E = Sb, lone pair or Sn, Ph or Bi, lone pair] is reported. The target compounds are prepared by straightforward one-step reactions between oxides (LMO)2 (M = Sb or Bi) or organotin(iv) carbonate L(Ph)Sn(CO3) with four or two molar equivalents of corresponding organoboronic acid. All compounds were characterized with the help of elemental analysis, multinuclear NMR spectroscopy and on several occasions the molecular structure was determined using single-crystal X-ray diffraction analysis. The influence of both the substitution of the parent organoboronic acid and the central atom used on the feasibility of the condensation reaction was addressed. Furthermore, several heteroboroxines containing nitrogen donor functionality (i.e. NH2, NMe2, CN or 4-pyridyl) included in the boronic acid residue were synthesized and characterized with the aim to prepare boroxine-based covalent frameworks (through intermolecular N→B interactions) containing metal atoms in their structures. Although no such intermolecular bonding was detected in solution of these compounds, it was shown that the organotin(iv) heteroboroxine substituted by 4-pyridyl group forms an infinite polymeric chains via N→B interactions in the solid state. This polymer collapsed back to monomeric units upon dissolution.

  17. Effects of Ge substitution in GeTe by Ag or Sb on the Seebeck coefficient and carrier concentration derived from 125Te NMR

    NASA Astrophysics Data System (ADS)

    Levin, E. M.

    2016-01-01

    GeTe, a self-doping p -type semiconductor where the high free hole concentration is determined by Ge vacancies is a well-known base for high-efficiency A gxS bxG e50 -2 xT e50 (a tellurium-antimony-germanium-silver series) thermoelectric materials. Here it is shown that the replacement of Ge by Ag in GeTe (a A gxG e50 -xT e50 system) significantly decreases the Seebeck coefficient, whereas the replacement by Sb (S bxG e50 -xT e50 ) increases it. These effects can be attributed to a change in carrier concentration and consistent with 125Te NMR spin-lattice relaxation measurements and NMR signal position, which is mostly dependent on the Knight shift. Opposite changes in carrier concentration in A gxG e50 -xT e50 and S bxG e50 -xT e50 can be explained by different valence electron configurations of Ag and Sb compared to that of Ge, which results in a different local electron imbalance and/or in a change in Ge vacancy formation energy and affects the total carrier concentration. Comparison of our data for GeTe, A g2G e48T e50 , and S b2G e48T e50 with those for A g2S b2G e46T e50 shows that the effects from Ag and Sb compensate for each other and supports the formation of [Ag +Sb ] atomic pairs suggested earlier based on theoretical calculations.

  18. Development of Sn-Ag-Cu-X Solders for Electronic Assembly by Micro-Alloying with Al

    SciTech Connect

    Boesenberg, Adam; Anderson, Iver; Harringa, Joel

    2012-03-10

    Of Pb-free solder choices, an array of solder alloys based on the Sn-Ag-Cu (SAC) ternary eutectic (T eut = 217°C) composition have emerged with potential for broad use, including ball grid array (BGA) joints that cool slowly. This work investigated minor substitutional additions of Al (<0.25 wt.%) to Sn-3.5Ag-0.95Cu (SAC3595) solders to promote more consistent solder joint microstructures and to avoid deleterious product phases, e.g., Ag3Sn “blades,” for BGA cooling rates, since such Al additions to SAC had already demonstrated excellent thermal aging stability. Consistent with past work, blade formation was suppressed for increased Al content (>0.05Al), but the suppression effect faded for >0.20Al. Undercooling suppression did not correlate specifically with blade suppression since it became significant at 0.10Al and increased continuously with greater Al to 0.25Al. Surprisingly, an intermediate range of Al content (0.10 wt.% to 0.20 wt.% Al) promoted formation of significant populations of 2-μm to 5-μm faceted Cu-Al particles, identified as Cu33Al17, that clustered at the top of the solder joint matrix and exhibited extraordinary hardness. Clustering of Cu33Al17 was attributed to its buoyancy, from a lower density than Sn liquid, and its early position in the nucleation sequence within the solder matrix, permitting unrestricted migration to the top interface. Joint microstructures and implications for the full nucleation sequence for these SAC + Al solder joints are discussed, along with possible benefits from the clustered particles for improved thermal cycling resistance.

  19. Effects of PCB Pad Metal Finishes on the Cu-Pillar/Sn-Ag Micro Bump Joint Reliability of Chip-on-Board (COB) Assembly

    NASA Astrophysics Data System (ADS)

    Kim, Youngsoon; Lee, Seyong; Shin, Ji-won; Paik, Kyung-Wook

    2016-06-01

    While solder bumps have been used as the bump structure to form the interconnection during the last few decades, the continuing scaling down of devices has led to a change in the bump structure to Cu-pillar/Sn-Ag micro-bumps. Cu-pillar/Sn-Ag micro-bump interconnections differ from conventional solder bump interconnections in terms of their assembly processing and reliability. A thermo-compression bonding method with pre-applied b-stage non-conductive films has been adopted to form solder joints between Cu pillar/Sn-Ag micro bumps and printed circuit board vehicles, using various pad metal finishes. As a result, various interfacial inter-metallic compounds (IMCs) reactions and stress concentrations occur at the Cu pillar/Sn-Ag micro bumps joints. Therefore, it is necessary to investigate the influence of pad metal finishes on the structural reliability of fine pitch Cu pillar/Sn-Ag micro bumps flip chip packaging. In this study, four different pad surface finishes (Thin Ni ENEPIG, OSP, ENEPIG, ENIG) were evaluated in terms of their interconnection reliability by thermal cycle (T/C) test up to 2000 cycles at temperatures ranging from -55°C to 125°C and high-temperature storage test up to 1000 h at 150°C. The contact resistances of the Cu pillar/Sn-Ag micro bump showed significant differences after the T/C reliability test in the following order: thin Ni ENEPIG > OSP > ENEPIG where the thin Ni ENEPIG pad metal finish provided the best Cu pillar/Sn-Ag micro bump interconnection in terms of bump joint reliability. Various IMCs formed between the bump joint areas can account for the main failure mechanism.

  20. Effects of soft beam energy on the microstructure of Pb37Sn, Au20Sn, and Sn3.5Ag0.5Cu solder joints in lensed-SM-fiber to laser-diode-affixing application

    NASA Astrophysics Data System (ADS)

    Tan, C. W.; Chan, Y. C.; Leung, Bernard; Liu, H. D.

    2008-01-01

    This paper reports on the effectiveness of soft beam energy as a heat source to form an optimum solder joint to fix a lensed fiber permanently on a Ni/Au-plated substrate. Solders, i.e., Pb37Sn, Au20Sn, and Sn3.5Ag0.5Cu (SAC) [wt%] were evaluated for this fluxless application. The microstructures of the solder joints have been examined using scanning electron microscopy (SEM), in order to understand the response of these solder materials to the focussed white light. Obviously, the exposure time has a greater effect on the soldering temperature before reaching the peak temperature, which is determined by the power. A power setting of 40 W can reach approximately 340 °C, 30 W can reach about 310 °C while 25 W can easily reach 260 °C. In general, a higher soldering temperature than the melting temperature is required to form good wetting solder joints for fluxless applications. However, too high an input thermal energy may result in premature aging for the cases of Pb37Sn and SAC, and lateral cracks for the case of Au20Sn. The thermal cracks and voids observed in Au20Sn solder joint were attributed to the fact that the soft beam heating profile does not suit the AuSn preform. Out of these three solder types, SAC demonstrated just the right response to the soft beam, i.e., good wetting, fine and homogeneous structure, and no cracks or other visible failures.

  1. A Novel Multiphase Sn-Sb-Cu Alloy Electrodeposited on 3D Interconnected Microporous Cu Current Collector as Negative Electrode for Lithium Ion Battery

    NASA Astrophysics Data System (ADS)

    Sengupta, Srijan; Patra, Arghya; Deo, Yash; Das, Karabi; Majumder, Subhasish Basu; Das, Siddhartha

    2017-03-01

    We report a novel, active-active-inactive-type tin-antimony-copper alloy with dendritic morphology electrodeposited on 3D interconnected microporous copper foam ( 70 μm pore diameter) as a promising high specific capacity anode for Li-ion batteries. The multiphase composition, SnSb and Cu6Sn5 "reactant" intermetallics embedded in Sn "matrix," alleviates the volumetric stress generated during cycling by lithiating at different step potentials (0.84, 0.66, 0.57, 0.42, 0.39, and 0.38 to 0.33 V vs Li/Li+). Copper foam successfully acts as a stress buffer preventing both pulverization and delamination. This combination of properties in tin-antimony-copper anode on copper foam results in 2nd cycle discharge capacity of 723 mAh/g, superior rate capability, and stable cycle retention with a capacity loss of 16 pct in the last 70 cycles at a rate of 400 mA/g (0.5 C) while preserving its structural integrity in comparison to tin-antimony-copper anode deposited on a planar copper foil as a current collector.

  2. Single crystal growth of Sn0.97Ag0.03Se by a novel horizontal Bridgman method and its thermoelectric properties

    NASA Astrophysics Data System (ADS)

    Jin, Min; Shao, Hezhu; Hu, Haoyang; Li, Debo; Xu, Jingtao; Liu, Guoqiang; Shen, Hui; Xu, Jiayue; Jiang, Haochuan; Jiang, Jun

    2017-02-01

    SnSe-based single crystal has attracted much attention due to its outstanding thermoelectric behaviors, however, the fabrication of large size crystal seems difficult as it is very easy to cleavage during crystal growth. In this work, a novel horizontal Bridgman method was employed to produce SnSe crystal with 3 mol% Ag substitute for Sn. The Sn0.97Ag0.03Se raw material was in-situ synthesized in the horizontal Bridgman furnace and the crystal was grown in a PBN crucible. B2O3 encapsulant was used to prevent Se volatilization. The as-grown Sn0.97Ag0.03Se crystal was about 105 g in weight and a 25 mm×20 mm×15 mm single crystal was obtained. The density of the single crystal of 6.178 g/cm3 close to the theoretical value was measured. X-ray powder diffraction measurement indicated Sn0.97Ag0.03Se single crystal had orthorhombic Pnma structure at room temperature. The thermoelectric properties along a axis were analyzed and the Figure-of-merit, ZT=0.95 was obtained at 793 K mainly due to the low thermal conductivity near the Pnma-Cmcm phase transition temperature.

  3. Characterization of Cu3P phase in Sn3.0Ag0.5Cu0.5P/Cu solder joints

    NASA Astrophysics Data System (ADS)

    Chen, Jian-xun; Zhao, Xing-ke; Zou, Xu-chen; Huang, Ji-hua; Hu, Hai-chun; Luo, Hai-lian

    2014-01-01

    This article reports the effects of phosphorus addition on the melting behavior, microstructure, and mechanical properties of Sn3.0Ag0.5Cu solder. The melting behavior of the solder alloys was determined by differential scanning calorimetry. The interfacial microstructure and phase composition of solder/Cu joints were studied by scanning electron microscopy and energy dispersive spectrometry. Thermodynamics of Cu-P phase formation at the interface between Sn3.0Ag0.5Cu0.5P solder and the Cu substrate was characterized. The results indicate that P addition into Sn3.0Ag0.5Cu solder can change the microstructure and cause the appearance of rod-like Cu3P phase which is distributed randomly in the solder bulk. The Sn3.0Ag0.5Cu0.5P joint shows a mixture of ductile and brittle fracture after shear testing. Meanwhile, the solidus temperature of Sn3.0Ag0.5Cu solder is slightly enhanced with P addition.

  4. Fabrication of (Ba,K)Fe2As2 tapes by ex situ PIT process using Ag-Sn alloy single sheath

    NASA Astrophysics Data System (ADS)

    Togano, K.; Gao, Z.; Matsumoto, A.; Kikuchi, A.; Kumakura, H.

    2017-01-01

    Instead of ordinal pure Ag, Ag-based Sn binary alloys (up to 7.5 at%Sn) with higher mechanical strength are used for the sheath material of ex situ powder-in-tube (PIT)-processed (Ba,K)Fe2As2(Ba-122) tapes. We found that the use of the Ag-Sn alloy enhances the densification and texturing of the Ba-122 core, resulting in higher transport, J c. Moreover, the optimum heat treatment temperature for a high J c can be lowered by around 100 °C due to the higher packing density of the Ba-122 core prior to the final heat treatment. We also found that the smoothness of the interface between the sheath and Ba-122 core is significantly improved by using the Ag-Sn binary alloy sheaths. These results show that the Ag-Sn alloy is promising as a sheath material in PIT-processed Ba-122 superconducting wires.

  5. Mechanical and thermomechanical stability issues of 96.5SN-3.5AG solder joints in microelectronic packages

    NASA Astrophysics Data System (ADS)

    Yang, Hong

    Flip chip technology is the ultimate solution for high performance and high density chip level interconnection. This thesis describes the investigation of using eutectic 96.5Sn-3.5Ag solder for flip chip applications. The principal components of the research include mechanical characterization, bumping process development, and finite element simulation for solder joint reliability. A novel solder bumping process was developed for wafer level fabrication of 96.5Sn-3.5Ag solder bumps. As a baseline process, an electroplating method was applied to fabricate the micro-scale solder bumps with 125-mum diameter, 250-mum pitch and approximately 80-mum height. Pre-deposition of solder bumps was carried out by electroplating over a fine-pattern photoresist mask. Rapid dissolution of Ag into Sn was accomplished during reflow and chip joining process. Nickel was selected as the diffusion barrier and wetting layer in the under-the-bump metallurgy (UBM). Microstructural and compositional analyses were performed using SEM and EDS. Three different mechanical testing techniques including tensile creep, lap shear creep, and automated ball indentation tests were used to characterize the mechanical deformation behavior of 96.5Sn-3.5Ag solder and solder joints. Constant-load creep tests on bulk specimens revealed a dislocation climb mechanism with a relatively large stress exponent of n = 10 for creep strain rates ranging from 10sp{-9} to 10sp{-3} and at temperatures ranging from 298K to 453K. The apparent activation energy for creep was found to be 0.57 ev. Lap shear creep tests on 96.5Sn-7.5Ag solder bumps also revealed a dislocation climb mechanism with a stress exponent of n = 10 for creep strain rates ranging from 10sp{-7} to 10sp{-4} at room temperature. In general, the solder joints are more creep resistant than the bulk specimen due to the inclusion of solder/base metal intermetallics. The intermetallic compounds may form precipitates or dispersoids in the solder matrix and

  6. AgI alloying in SnTe boosts the thermoelectric performance via simultaneous valence band convergence and carrier concentration optimization

    NASA Astrophysics Data System (ADS)

    Banik, Ananya; Biswas, Kanishka

    2016-10-01

    SnTe, a Pb-free analogue of PbTe, was earlier assumed to be a poor thermoelectric material due to excess p-type carrier concentration and large energy separation between light and heavy hole valence bands. Here, we report the enhancement of the thermoelectric performance of p-type SnTe by Ag and I co-doping. AgI (1-6 mol%) alloying in SnTe modulates its electronic structure by increasing the band gap of SnTe, which results in decrease in the energy separation between its light and heavy hole valence bands, thereby giving rise to valence band convergence. Additionally, iodine doping in the Te sublattice of SnTe decreases the excess p-type carrier concentration. Due to significant decrease in hole concentration and reduction of the energy separation between light and heavy hole valence bands, significant enhancement in Seebeck coefficient was achieved at the temperature range of 600-900 K for Sn1-xAgxTe1-xIx samples. A maximum thermoelectric figure of merit, zT, of ~1.05 was achieved at 860 K in high quality crystalline ingot of p-type Sn0.95Ag0.05Te0.95I0.05.

  7. An investigation of the microstructure and mechanical properties of electrochemically coated Ag(4)Sn dental alloy particles condensed in vitro

    NASA Astrophysics Data System (ADS)

    Marquez, Jose Antonio

    As part of the ongoing scientific effort to develop a new amalgam-like material without mercury, a team of metallurgists and electrochemists at the National Institute of Standards and Technology (NIST) in Gaithersburg, Maryland, announced in 1993 the development of a new Ag-Sn dental alloy system without mercury that sought to replace conventional dental amalgams. They used spherical Ag3Sn and Ag4Sn intermetallic dental alloy particles, commonly used in conventional dental alloys, and coated them with electrodeposited silver with newly-developed electrolytic and immersion techniques. The particles had relatively pure silver coatings that were closely adherent to the intermetalfic cores. These silver-coated particles, due to silver's plasticity at room temperature, were condensed into PlexiglasRTM molds with the aid of an acidic surface activating solution (HBF4) and a mechanical condensing device, producing a metal-matrix composite with Ag3,4Sn filler particles surrounded by a cold-welded silver matrix. Since silver strain hardens rather easily, the layers had to be condensed in less than 0.5 mm increments to obtain a dense structure. Mechanical testing at NIST produced compressive strength values equal to or greater than those of conventional dental amalgams. Because of its potential for eliminating mercury as a constituent in dental amalgam, this material created a stir in dental circles when first developed and conceivably could prove to be a major breakthrough in the field of dental restoratives. To date, the chief impediments to its approval for human clinical applications by the Food and Drug Administration are the potentially-toxic surface activating solution used for oxide reduction, and the high condensation pressures needed for cold welding because of the tendency for silver to strain harden. In this related study, the author, who has practiced general dentistry for 25 years, evaluates some of the mechanical and microstructural properties of these

  8. Magnetic properties and magnetocaloric effect at room temperature of Ni50- x Ag x Mn37Sn13 alloys

    NASA Astrophysics Data System (ADS)

    Thanh, Tran Dang; Mai, Nguyen Thi; Dan, Nguyen Huy; Phan, The-Long; Yu, Seong-Cho

    2014-11-01

    In this work, we present a detailed study of the magnetic properties and the magnetocaloric effect at room temperature of Ni50- x Ag x Mn37Sn13 alloys with x = 1, 2, and 4, which were prepared by using an arc-melting method. Experimental results reveal that a partial replacement of Ag for Ni leads to a decrease in the anti-FM phase in the alloys. In addition, the martensitic-austenitic phase transition shifts towards lower temperature and is broaded. The Curie temperature ( T C A ) for the austenitic phase also shifts toward to lower temperature, but not by much. The Curie temperature was found to be 308, 305, and 298 K for x = 1, 2, and 4, respectively. The magnetic entropy change (Δ S m ) of the samples was calculated by using isothermal magnetization data. Under an applied magnetic field change of 10 kOe, the maximum value of Δ S m (|Δ S max |) was achieved at around room temperature and did not change much (~0.8 J·kg-1·K-1) with increasing Ag-doping concentration. Particularly, the M 2 vs. H/ M curves prove that all the samples exhibited a second-order magnetic phase transition. Based on Landau's phase-transition theory and careful analyses of the magnetic data around the T C A , we have determined the critical parameters β, γ, δ, and T C . The results show that the β values are located between those expected for the 3D-Heisenberg model ( β = 0.365) and mean-field theory ( β = 0.5). Such a result proves the coexistence of short-range and long-range ferromagnetic interactions in Ni50- x Ag x Mn37Sn13 alloys. The nature of the changes in the critical parameters and the |Δ S max | is thoroughly discussed by means of structural analyses.

  9. Thin-film metallic glass: an effective diffusion barrier for Se-doped AgSbTe2 thermoelectric modules

    NASA Astrophysics Data System (ADS)

    Yu, Chia-Chi; Wu, Hsin-Jay; Deng, Ping-Yuan; Agne, Matthias T.; Snyder, G. Jeffrey; Chu, Jinn P.

    2017-03-01

    The thermal stability of joints in thermoelectric (TE) modules, which are degraded during interdiffusion between the TE material and the contacting metal, needs to be addressed in order to utilize TE technology for competitive, sustainable energy applications. Herein, we deposit a 200 nm-thick Zr-based thin-film metallic glass (TFMG), which acts as an effective diffusion barrier layer with low electrical contact resistivity, on a high-zT Se-doped AgSbTe2 substrate. The reaction couples structured with TFMG/TE are annealed at 673 K for 8–360 hours and analyzed by electron microscopy. No observable IMCs (intermetallic compounds) are formed at the TFMG/TE interface, suggesting the effective inhibition of atomic diffusion that may be attributed to the grain-boundary-free structure of TFMG. The minor amount of Se acts as a tracer species, and a homogeneous Se-rich region is found nearing the TFMG/TE interface, which guarantees satisfactory bonding at the joint. The diffusion of Se, which has the smallest atomic volume of all the elements from the TE substrate, is found to follow Fick’s second law. The calculated diffusivity (D) of Se in TFMG falls in the range of D~10‑20–10‑23(m2/s), which is 106~107 and 1012~1013 times smaller than those of Ni [10‑14–10‑17(m2/s)] and Cu [10‑8–10‑11(m2/s)] in Bi2Te3, respectively.

  10. Thin-film metallic glass: an effective diffusion barrier for Se-doped AgSbTe2 thermoelectric modules

    PubMed Central

    Yu, Chia-Chi; Wu, Hsin-jay; Deng, Ping-Yuan; Agne, Matthias T.; Snyder, G. Jeffrey; Chu, Jinn P.

    2017-01-01

    The thermal stability of joints in thermoelectric (TE) modules, which are degraded during interdiffusion between the TE material and the contacting metal, needs to be addressed in order to utilize TE technology for competitive, sustainable energy applications. Herein, we deposit a 200 nm-thick Zr-based thin-film metallic glass (TFMG), which acts as an effective diffusion barrier layer with low electrical contact resistivity, on a high-zT Se-doped AgSbTe2 substrate. The reaction couples structured with TFMG/TE are annealed at 673 K for 8–360 hours and analyzed by electron microscopy. No observable IMCs (intermetallic compounds) are formed at the TFMG/TE interface, suggesting the effective inhibition of atomic diffusion that may be attributed to the grain-boundary-free structure of TFMG. The minor amount of Se acts as a tracer species, and a homogeneous Se-rich region is found nearing the TFMG/TE interface, which guarantees satisfactory bonding at the joint. The diffusion of Se, which has the smallest atomic volume of all the elements from the TE substrate, is found to follow Fick’s second law. The calculated diffusivity (D) of Se in TFMG falls in the range of D~10−20–10−23(m2/s), which is 106~107 and 1012~1013 times smaller than those of Ni [10−14–10−17(m2/s)] and Cu [10−8–10−11(m2/s)] in Bi2Te3, respectively. PMID:28327655

  11. New dielectric ceramics Pb(Cd)BiM/sup IV/SbO/sub 7/ (M/sup IV/ = Ti, Zr, Sn) with the pyrochlore structure

    SciTech Connect

    Lambachri, A.; Monier, M.; Mercurio, J.P.; Frit, B.

    1988-04-01

    Dielectric ceramics have been obtained by natural sintering of pyrochlore phases with general formula Pb(Cd)BiM/sup IV/SbO/sub 7/ (M/sup IV/ = Ti, Zr, Sn). Low frequency dielectric characteristics have been studied with respect to the processing conditions: sintering without additive and in the presence of some low melting compounds (PbO, Pb/sub 5/Ge/sub 3/O/sub 11/, Bi/sub 12/PbO/sub 19/ and Bi/sub 12/CdO/sub 19/). The dielectric constants of these ceramics lie between 30 and 60, the dielectric losses range from 10 to 30.10/sup -4/ and the temperature coefficient of the dielectric constants (20 - 100/sup 0/C) can be tailored by means of additives in the +- 30 ppm K/sup -1/ range.

  12. Crystal growth and physical property of Bi-Sb-Te-Se topological insulator materials, and Cu-Bi-Se and Sn-In-Te topological superconductors

    NASA Astrophysics Data System (ADS)

    Gu, Genda; Yang, Alina; Schneeloch, J.; Zhong, R. D.; Xu, Z. J.; Tranquada, J. M.; Pan, Z. H.; Si, W. D.; Shi, X. Y.; Li, Q.; Valla, T.

    2013-03-01

    The discovery of 3D topological insulator materials and topological superconductor opens up a new research field in the condensed matter physics. We have grown a number of Bi-Sb-Te-Se topological insulator, and Cu-Bi-Se and Sn-In-Te topological superconductor single crystals. We have measured the physical properties on these single crystals. We have studied the effect of growth condition and impurity on the bulk electrical conductivity of these single crystals. We try to answer two questions for the topological insulator materials if it is possible to grow the bulk-insulating topological insulator single crystals and Which maximum resistivity of these topological insulator single crystals we can grow. For the topological superconductor, we have got the bulk superconducting single crystals with a maximum Tc =4.5K. DOE under Contract No. DE-AC02-98CH10886 and the DOE Center for Emergent Superconductivity.

  13. Creep Properties of Sn-1.0Ag-0.5Cu Lead-Free Solder with Ni Addition

    NASA Astrophysics Data System (ADS)

    Che, F. X.; Zhu, W. H.; Poh, Edith S. W.; Zhang, X. R.; Zhang, Xiaowu; Chai, T. C.; Gao, S.

    2011-03-01

    In this work, tensile creep tests for Sn-1.0Ag-0.5Cu-0.02Ni solder have been conducted at various temperatures and stress levels to determine its creep properties. The effects of stress level and temperature on creep strain rate were investigated. Creep constitutive models (such as the simple power-law model, hyperbolic sine model, double power-law model, and exponential model) have been reviewed, and the material constants of each model have been determined based on experimental results. The stress exponent and creep activation energy have been studied and compared with other researchers' results. These four creep constitutive models established in this paper were then implemented into a user-defined subroutine in the ANSYS™ finite-element analysis software to investigate the creep behavior of Sn-1.0Ag-0.5Cu-0.02Ni solder joints of thin fine-pitch ball grid array (TFBGA) packages for the purpose of model comparison and application. Similar simulation results of creep strain and creep strain energy density were achieved when using the different creep constitutive models, indicating that the creep models are consistent and accurate.

  14. Influence of thermal treatments on Ag Sn Cu powders in order to reduce mercury contents in dental amalgam.

    PubMed

    Bracho-Troconis, C; Colon, P; Bartout, J D; Bienvenu, Y

    2000-01-01

    The mercury content of dental amalgams is a controversial subject with regard to the biological properties of these materials. The object of this study is to optimize the thermal treatments performed on an experimental powder in order to obtain a low mercury ratio (41% by weight) while preserving the desirable clinical qualities of the material. Using atomized powder, two types of thermal treatments are performed: A1, to obtain a partially annealed structure and A2, to obtain a complete homogenization. The kinetics of the amalgamation reaction is mainly evaluated by X-ray diffraction to identify the newly formed phases as a function of setting time. Mechanical properties are evaluated according to the ISO norms at 37 degrees C. Metallographical examination of the amalgams shows a Ag-Hg phase which acts as a matrix incorporating the Cu-Sn and Ag-Sn compounds. The setting kinetics of the A1 amalgams is linear and slightly more rapid than that of the A2 amalgam. The mechanical properties of the amalgams are significantly improved regarding the higher mercury content commercial amalgams. A specific thermal treatment permits us to slow down the diffusion of mercury between the different intermetallic compounds into the powder. The final amalgam composition, thus, most approaches the stoechiometric ratio calculated from a quaternary diagram.

  15. Electromigration-induced cracks in Cu/Sn3.5Ag/Cu solder reaction couple at room temperature

    NASA Astrophysics Data System (ADS)

    Hongwen, He; Guangchen, Xu; Fu, Guo

    2009-03-01

    Electromigration (EM) behavior of Cu/Sn3.5Ag/Cu solder reaction couple was investigated with a high current density of 5 × 103 A/cm2 at room temperature. One dimensional structure, copper wire/solder ball/copper wire SRC was designed and fabricated to dissipate the Joule heating induced by the current flow. In addition, thermomigration effect was excluded due to the symmetrical structure of the SRC. The experimental results indicated that micro-cracks initially appeared near the cathode interface between solder matrix and copper substrate after 474 h current stressing. With current stressing time increased, the cracks propagated and extended along the cathode interface. It should be noted that the continuous Cu6Sn5 intermetallic compounds (IMCs) layer both at the anode and at the cathode remained their sizes. Interestingly, tiny cracks appeared at the root of some long column-type Cu6Sn5 at the cathode interface due to the thermal stress.

  16. Ultra-fast preparation of high-performance thermoelectric bulk TiNiSb0.05Sn0.95 by microwave synthesis.

    PubMed

    Li, Y; Cheng, C; Lei, Y; Wang, M; Wan, R D

    2016-12-20

    The antimony-doped half-Heusler thermoelectric bulk TiNiSb0.05Sn0.95 was prepared via ultra-fast 4.5 min microwave synthesis, cold-press forming and 20 min microwave pressureless sintering. The electrical properties i.e. the Seebeck coefficient (S), electrical resistivity (ρ), and carrier concentration (n) and mobility (μ) were measured on a Seebeck coefficient/resistance analysis system (S/RAs) and Hall effect measurement system (HEMS), respectively. The thermal conductivity (κ) was measured on a laser flash thermal analyzer (LFA). The results show that a high purity single phase was obtained after microwave sintering. The electrical resistivity is 2.70-5.33 μΩ m at temperatures ranging from ∼300 to 773 K. The highest power factor of 4042 μW m(-1) K(-2) was achieved at 473 K. The microstructure analyses show that numerous circular intercrystalline pores caused by microwave sintering are present within the TiNiSn grains. The lattice and total thermal conductivity are 1.76-3.77 and 4.66-5.98 W m(-1) K(-1). The highest thermoelectric figure of merit of 0.44 was achieved at 623 K.

  17. Sn-doped Bi1.1Sb0.9Te2S bulk crystal topological insulator with excellent properties

    DOE PAGES

    S. K. Kushwaha; Pletikosic, I.; Liang, T.; ...

    2016-04-27

    A long-standing issue in topological insulator research has been to find a bulk single crystal material that provides a high quality platform for characterizing topological surface states without interference from bulk electronic states. This material would ideally be a bulk insulator, have a surface state Dirac point energy well isolated from the bulk valence and conduction bands, display quantum oscillations from the surface state electrons, and be growable as large, high quality bulk single crystals. Here we show that this materials obstacle is overcome by bulk crystals of lightly Sn-doped Bi1.1Sb0.9Te2S grown by the Vertical Bridgeman method. We characterize Sn-BSTSmore » via angle-resolved photoemission spectroscopy, scanning tunneling microscopy, transport studies, X-ray diffraction, and Raman scattering. We present this material as a high quality topological insulator that can be reliably grown as bulk single crystals and thus studied by many researchers interested in topological surface states.« less

  18. Sn-doped Bi1.1Sb0.9Te2S bulk crystal topological insulator with excellent properties

    PubMed Central

    Kushwaha, S. K.; Pletikosić, I.; Liang, T.; Gyenis, A.; Lapidus, S. H.; Tian, Yao; Zhao, He; Burch, K. S.; Lin, Jingjing; Wang, Wudi; Ji, Huiwen; Fedorov, A. V.; Yazdani, Ali; Ong, N. P.; Valla, T.; Cava, R. J.

    2016-01-01

    A long-standing issue in topological insulator research has been to find a bulk single crystal material that provides a high-quality platform for characterizing topological surface states without interference from bulk electronic states. This material would ideally be a bulk insulator, have a surface state Dirac point energy well isolated from the bulk valence and conduction bands, display quantum oscillations from the surface state electrons and be growable as large, high-quality bulk single crystals. Here we show that this material obstacle is overcome by bulk crystals of lightly Sn-doped Bi1.1Sb0.9Te2S grown by the vertical Bridgman method. We characterize Sn-BSTS via angle-resolved photoemission spectroscopy, scanning tunnelling microscopy, transport studies, X-ray diffraction and Raman scattering. We present this material as a high-quality topological insulator that can be reliably grown as bulk single crystals and thus studied by many researchers interested in topological surface states. PMID:27118032

  19. Observation of Dirac-like band dispersion in LaAgSb2

    SciTech Connect

    Shi, X.; Richard, P.; Wang, Kefeng; Liu, M.; Matt, C. E.; Xu, N.; Dhaka, R. S.; Ristic, Z.; Qian, T.; Yang, Y. -F.; Petrovic, C.; Shi, M.; Ding, H.

    2016-02-16

    In this paper, we present a combined angle-resolved photoemission spectroscopy (ARPES) and first-principles calculations study of the electronic structure of LaAgSb2 in the entire first Brillouin zone. We observe a Dirac-cone-like structure in the vicinity of the Fermi level formed by the crossing of two linear energy bands, as well as the nested segments of a Fermi surface pocket emerging from the cone. In conclusion, our ARPES results show the close relationship of the Dirac cone to the charge-density-wave ordering, providing consistent explanations for exotic behaviors in this material.

  20. Fabrication and characterization of Sb-doped Sn02 thin films derived from methacrylic acid modified tin(IV)alkoxides

    NASA Astrophysics Data System (ADS)

    Kololuoma, Terho K.; Tolonen, Ari; Johansson, Leena-Sisko; Campbell, Joseph M.; Karkkainen, Ari H. O.; Hiltunen, Marianne; Haatainen, Tomi; Rantala, Juha T.

    2002-10-01

    We report on the fabrication of transparent, conductive and directly photopatternable, pure and Sb-doped tin dioxide thin films. Precursors used were antimony(III)isopropoxide and a photo-reactive tin alkoxide synthesized from tin(IV)isopropoxide and methacrylic acid. The synthesis of methacrylic acid modified tin alkoxide was monitored in-situ using IR- and ESI-TOF mass spectroscopic techniques. Sb-doped organo-tin films were deposited via single layer spin coating. After deposition the films were patterned via photopolymerization, using a mercury I-line UV-lamp. All investigated materials could be patterned with 3 μm features. After development in isopropanol, the films were annealed in air, in order to obtain crystalline and conductive films. The electrical conductivities of the annealed thin films with, and without, UV-irradiation were determined using a linear four-point method. The direct photopatterning process was found to increase the film conductivity for all the Sb-doping levels tested. The mechanisms for the increased conductivity were characterized using AFM, XPS and XRD techniques.

  1. Multistage hydrothermal silicification and Fe-Tl-As-Sb-Ge-REE enrichment in the Red Dog Zn-Pb-Ag district, northern Alaska: Geochemistry, origin, and exploration applications

    USGS Publications Warehouse

    Slack, J.F.; Kelley, K.D.; Anderson, V.M.; Clark, J.L.; Ayuso, R.A.

    2004-01-01

    Geochemical analyses of major, trace, and rare earth elements (REE) in more than 200 samples of variably silicified and altered wall rocks, massive and banded sulfide, silica rock, and sulfide-rich and unmineralized barite were obtained from the Main, Aqqaluk, and Anarraaq deposits in the Red Dog Zn-Pb-Ag district of northern Alaska. Detailed lithogeochemical profiles for two drill cores at Aqqaluk display an antithetic relationship between SiO2/Al2O3 and TiO2/Zr which, together with textural information, suggest preferential silicification of carbonate-bearing sediments. Data for both drill cores also show generally high Tl, Sb, As, and Ge and uniformly positive Eu anomalies (Eu/Eu* > 1.0). Similar high Tl, Sb, As, Ge, and Eu/Eu* values are present in the footwall and shallow hanging wall of Zn-Pb-Ag sulfide intervals at Anarraaq but are not as widely dispersed. Net chemical changes for altered wall rocks in the district, on the basis of average Al-normalized data relative to unaltered black shales of the host Kuna Formation, include large enrichments (>50%) of Fe, Ba, Eu, V, S, Co, Zn, Pb, Tl, As, Sb, and Ge at both Red Dog and Anarraaq, Si at Red Dog, and Sr, U, and Se at Anarraaq. Large depletions (>50%) are evident for Ca at both Red Dog and Anarraaq, for Mg, P, and Y at Red Dog, and for Na at Anarraaq. At both Red Dog and Anarraaq, wall-rock alteration removed calcite and minor dolomite during hydrothermal decarbonation reactions and introduced Si, Eu, and Ge during silicification. Sulfidation reactions deposited Fe, S, Co, Zn, Pb, Tl, As, and Sb; barite mineralization introduced Ba, S, and Sr. Light REE and U were mobilized locally. This alteration and mineralization occurred during Mississippi an hydrothermal events that predated the Middle Jurassic-Cretaceous Brookian orogeny. Early hydrothermal silicification at Red Dog took place prior to or during massive sulfide mineralization, on the basis of the dominantly planar nature of Zn-Pb veins, which suggests

  2. Glassy thermal conductivity in the two-phase Cu(x)Ag(3-x)SbSeTe(2) alloy and high temperature thermoelectric behavior.

    PubMed

    Drymiotis, F; Drye, T; Rhodes, D; Zhang, Q; Lashey, J C; Wang, Y; Cawthorne, S; Ma, B; Lindsey, S; Tritt, T

    2010-01-27

    We have measured the thermal transport properties over the temperature range 1.8 KAgSbTe(2) and Ag(2)Se in a 1:1 molar ratio. Typical electrical resistivity values at 700 K are in the range ∼4 mΩ cm≤ρ≤20 mΩ cm, while low thermal conductivity values (κ<1 W m(-1) K(-1)) were obtained. We find that the thermal conductivity of this crystalline alloy has a temperature dependence strikingly similar to those of amorphous solids. In addition the thermal conductivity, thermopower, and electrical resistivity decouple. This result makes it possible to optimize thermoelectric performance by minimizing the electrical resistivity. It is therefore envisaged that this system has potential as a high performance bulk thermoelectric.

  3. Fully epitaxial C1b-type NiMnSb half-Heusler alloy films for current-perpendicular-to-plane giant magnetoresistance devices with a Ag spacer.

    PubMed

    Wen, Zhenchao; Kubota, Takahide; Yamamoto, Tatsuya; Takanashi, Koki

    2015-12-17

    Remarkable magnetic and spin-dependent transport properties arise from well-designed spintronic materials and heterostructures. Half-metallic Heusler alloys with high spin polarization exhibit properties that are particularly advantageous for the development of high-performance spintronic devices. Here, we report fully (001)-epitaxial growth of a high-quality half-metallic NiMnSb half-Heusler alloy films, and their application to current-perpendicular-to-plane giant magnetoresistance (CPP-GMR) devices with Ag spacer layers. Fully (001)-oriented NiMnSb epitaxial films with very flat surface and high magnetization were prepared on Cr/Ag-buffered MgO(001) single crystalline substrates by changing the substrate temperature. Epitaxial CPP-GMR devices using the NiMnSb films and a Ag spacer were fabricated, and room-temperature (RT) CPP-GMR ratios for the C1b-type half-Heusler alloy were determined for the first time. A CPP-GMR ratio of 8% (21%) at RT (4.2 K) was achieved in the fully epitaxial NiMnSb/Ag/NiMnSb structures. Furthermore, negative anisotropic magnetoresistance (AMR) ratio and small discrepancy of the AMR amplitudes between RT and 10 K were observed in a single epitaxial NiMnSb film, indicating robust bulk half metallicity against thermal fluctuation in the half-Heusler compound. The modest CPP-GMR ratios could be attributed to interface effects between NiMnSb and Ag. This work provides a pathway for engineering a new class of ordered alloy materials with particular emphasis on spintronics.

  4. Fully epitaxial C1b-type NiMnSb half-Heusler alloy films for current-perpendicular-to-plane giant magnetoresistance devices with a Ag spacer

    PubMed Central

    Wen, Zhenchao; Kubota, Takahide; Yamamoto, Tatsuya; Takanashi, Koki

    2015-01-01

    Remarkable magnetic and spin-dependent transport properties arise from well-designed spintronic materials and heterostructures. Half-metallic Heusler alloys with high spin polarization exhibit properties that are particularly advantageous for the development of high-performance spintronic devices. Here, we report fully (001)-epitaxial growth of a high-quality half-metallic NiMnSb half-Heusler alloy films, and their application to current-perpendicular-to-plane giant magnetoresistance (CPP-GMR) devices with Ag spacer layers. Fully (001)-oriented NiMnSb epitaxial films with very flat surface and high magnetization were prepared on Cr/Ag-buffered MgO(001) single crystalline substrates by changing the substrate temperature. Epitaxial CPP-GMR devices using the NiMnSb films and a Ag spacer were fabricated, and room-temperature (RT) CPP-GMR ratios for the C1b-type half-Heusler alloy were determined for the first time. A CPP-GMR ratio of 8% (21%) at RT (4.2 K) was achieved in the fully epitaxial NiMnSb/Ag/NiMnSb structures. Furthermore, negative anisotropic magnetoresistance (AMR) ratio and small discrepancy of the AMR amplitudes between RT and 10 K were observed in a single epitaxial NiMnSb film, indicating robust bulk half metallicity against thermal fluctuation in the half-Heusler compound. The modest CPP-GMR ratios could be attributed to interface effects between NiMnSb and Ag. This work provides a pathway for engineering a new class of ordered alloy materials with particular emphasis on spintronics. PMID:26672482

  5. Electronic and phonon transport in Sb-doped Ti(0.1)Zr(0.9)Ni(1+x)Sn(0.975)Sb(0.025) nanocomposites.

    PubMed

    Liu, Yuanfeng; Page, Alexander; Sahoo, Pranati; Chi, Hang; Uher, Ctirad; Poudeu, Pierre F P

    2014-06-07

    The thermoelectric behavior of n-type Sb-doped half-Heusler (HH)-full-Heusler (FH) nanocomposites with general composition Ti(0.1)Zr(0.9)Ni(1+x)Sn(0.975)Sb(0.025) (x = 0, 0.02, 0.04, 0.1) was investigated in the temperature range from 300 to 775 K. Samples used for structural characterization and transport measurements were obtained through the solid-state reaction of high purity elements at 950 °C and densification of the resulting polycrystalline powders using a uniaxial hot press. X-ray diffraction study of the powder samples suggested the formation of single-phase HH alloys regardless of the Ni concentration (x value). However, high resolution transmission electron microscopy investigation revealed the presence of spherical nanoprecipitates with a broad size distribution coherently embedded in the HH matrix. The size range and dispersion of the precipitates depend on the concentration of Ni in the starting mixture. Well dispersed nanoprecipitates with size ranging from 5 nm to 50 nm are observed in the nanocomposite with x = 0.04, while severe agglomeration of large precipitates (>50 nm) is observed in samples with x = 0.1. Hall effect measurements of various samples indicate that the carrier concentration within the Sb-doped HH matrix remains nearly constant (~7 × 10(20) cm(-3)) for samples with x = 0.02 and x = 0.04, whereas a significant increase of the carrier concentration to ~9 × 10(20) cm(-3) is observed for the sample with x = 0.1. Interestingly, only a marginal change in thermopower value is observed for various samples despite the large difference in the carrier density. In addition, the carrier mobility remains constant up to x = 0.04 suggesting that the small nanoprecipitates in these samples do not disrupt electronic transport within the matrix. Remarkably, a large reduction in the total thermal conductivity is observed for all nanocomposites, indicating the effectiveness of the embedded nanoprecipitates in scattering phonons while enabling

  6. Assessment of low-cycle fatigue life of Sn-3.5mass%Ag-X (X=Bi or Cu) alloy by strain range partitioning approach

    NASA Astrophysics Data System (ADS)

    Kariya, Yoshiharu; Morihata, Tomoo; Hazawa, Eisaku; Otsuka, Masahisa

    2001-09-01

    The fatigue lives and damage mechanisms of Sn-Ag-X (X=Bi and Cu) solder alloys under creep-fatigue interaction mode have been investigated, and the adaptability of the strain partitioning approach to the creep-fatigue of these alloys was examined. Symmetrical and asymmetrical saw-tooth strain profiles components ( i.e., fast-fast, fast-slow, slow-fast and slow-slow) were employed. Application of the slow slow,strain mode did not have an effect on fatigue lives of the alloys under investigation. Transgranular fracture observed on the fracture surfaces suggests that creep damage might be cancelled under slowslow mode. The fatigue lives of all alloys were dramatically reduced under slowfast mode, which is attributed to intergranular cavitation and fracture during tensile creep flow. On the other hand, the compression creep component generated by fast-slow mode also significantly reduced the life of Sn-3.5Ag and Sn-3.5Ag-1Cu, while the component did not affect the life of Sn-3.5Ag-xBi (x=2 and 5). The four partitioned strain ranges (i.e.,p, pp, cp, and cc) versus life relationships were established in all alloys tested. Thus, it is confirmed that the creep-fatigue life of these alloys can be quantitatively predicted by the strain partitioning approach for any type of inelastic strain cycling.

  7. Electronic properties of GeTe and Ag- or Sb-substituted GeTe studied by low-temperature Te125 NMR

    DOE PAGES

    Cui, J.; Levin, E. M.; Lee, Y.; ...

    2016-08-18

    We have carried out 125Te nuclear magnetic resonance (NMR) in a wide temperature range of 1.5–300 K to investigate the electronic properties of Ge50 Te50, Ag2 Ge48Te50 , and Sb2 Ge48 Te50 from a microscopic point of view. From the temperature dependence of the NMR shift (K) and nuclear spin lattice relaxation rate (1/T1), we found that two bands contribute to the physical properties of the materials. One band overlaps the Fermi level providing the metallic state where no strong electron correlations are revealed by Korringa analysis. The other band is separated from the Fermi level by an energy gapmore » of Eg/kB ~67 K, which gives rise to semiconductorlike properties. First-principles calculation reveals that the metallic band originates from the Ge vacancy while the semiconductorlike band is related to the fine structure of the density of states near the Fermi level. We find low-temperature Te125 NMR data for the materials studied here clearly show that Ag substitution increases hole concentration while Sb substitution decreases it.« less

  8. Optical and electrical properties and phonon drag effect in low temperature TEP measurements of AgSbSe2 thin films

    NASA Astrophysics Data System (ADS)

    Namitha Asokan, T.; Urmila, K. S.; Jacob, Rajani; Reena Philip, Rachel; Okram, G. S.; Ganesan, V.; Pradeep, B.

    2014-05-01

    Polycrystalline thin films of silver antimony selenide have been deposited using a reactive evaporation technique onto an ultrasonically cleaned glass substrate at a vacuum of 10-5 torr. The preparative parameters, like substrate temperature and incident fluxes, have been properly controlled in order to get stoichiometric, good quality and reproducible thin film samples. The samples are characterized by XRD, SEM, AFM and a UV—vis—NIR spectrophotometer. The prepared sample is found to be polycrystalline in nature. From the XRD pattern, the average particle size and lattice constant are calculated. The dislocation density, strain and number of crystallites per unit area are evaluated using the average particle size. The dependence of the electrical conductivity on the temperature has also been studied and the prepared AgSbSe2 samples are semiconducting in nature. The AgSbSe2 thin films exhibited an indirect allowed optical transition with a band gap of 0.64 eV. The compound exhibits promising thermoelectric properties, a large Seebeck coefficient of 30 mV/K at 48 K due to strong phonon electron interaction. It shows a strong temperature dependence on thermoelectric properties, including the inversion of a dominant carrier type from p to n over a low temperature range 9-300 K, which is explained on the basis of a phonon drag effect.

  9. Electronic properties of GeTe and Ag- or Sb-substituted GeTe studied by low-temperature 125Te NMR

    NASA Astrophysics Data System (ADS)

    Cui, J.; Levin, E. M.; Lee, Y.; Furukawa, Y.

    2016-08-01

    We have carried out 125Te nuclear magnetic resonance (NMR) in a wide temperature range of 1.5-300 K to investigate the electronic properties of Ge50Te50 ,Ag2Ge48Te50 , and Sb2Ge48Te50 from a microscopic point of view. From the temperature dependence of the NMR shift (K ) and nuclear spin lattice relaxation rate (1 /T1 ), we found that two bands contribute to the physical properties of the materials. One band overlaps the Fermi level providing the metallic state where no strong electron correlations are revealed by Korringa analysis. The other band is separated from the Fermi level by an energy gap of Eg/kB˜67 K, which gives rise to semiconductorlike properties. First-principles calculation reveals that the metallic band originates from the Ge vacancy while the semiconductorlike band is related to the fine structure of the density of states near the Fermi level. Low-temperature 125Te NMR data for the materials studied here clearly show that Ag substitution increases hole concentration while Sb substitution decreases it.

  10. Extensive study of potential harmful elements (Ag, As, Hg, Sb, and Se) in surface sediments of the Bohai Sea, China: Sources and environmental risks.

    PubMed

    Li, Li; Cui, Jingjing; Liu, Jihua; Gao, Jingjing; Bai, Yazhi; Shi, Xuefa

    2016-12-01

    This study analyzed 405 surface sediment samples, obtained from across the Bohai Sea, for concentrations of five potentially harmful elements (Ag, As, Hg, Sb, and Se) and several ancillary parameters (Al, Fe, Mn, total organic carbon (TOC), and grain size). Statistically, the spatial distributions of these elements were correlated positively with Al, Fe, TOC, and grain size, indicating natural sources for these elements or common accumulation mechanisms. The assessment of potential environmental risk with empirical sediment quality guidelines showed that a significant proportion of the samples had As and Sb concentrations that exceeded the effects range low (ERL) or T20 values in the Bohai Sea, indicating the potential for adverse biological effects. However, the assessment results differed when using evaluation methods that considered background values. Based on the geoaccumulation index (Igeo), Hg and Ag were found to have the highest percentages (35% and 60%, respectively) in samples that were moderately contaminated. The estimated contamination degree (Cd) suggested higher contamination levels for the entire area, with 69% of the samples being moderately contaminated. Generally, except for some local hotspots, such as Jinzhou Bay, the contamination levels of these elements in the Bohai Sea were established as slight to moderate. Samples from the Jinzhou Bay area had concentrations that were 10-100 times higher than in the rest of the Bohai Sea, indicating severe contamination.

  11. Enhanced current-perpendicular-to-plane giant magnetoresistance effect in half-metallic NiMnSb based nanojunctions with multiple Ag spacers

    NASA Astrophysics Data System (ADS)

    Wen, Zhenchao; Kubota, Takahide; Yamamoto, Tatsuya; Takanashi, Koki

    2016-06-01

    Current-perpendicular-to-plane giant magnetoresistance (CPP-GMR) heterostructure devices using half-metallic NiMnSb Heusler alloy electrodes with single, dual, and triple Ag spacers were fabricated. The NiMnSb alloy films and Ag spacers show (001) epitaxial growth in all CPP-GMR multilayer structures. The dual-spacer CPP-GMR nanojunction exhibited an enhanced CPP-GMR ratio of 11% (a change in the resistance-area product, ΔRA, of 3.9 mΩ μm2) at room temperature, which is approximately twice (thrice) of 6% (1.3 mΩ μm2) in the single-spacer device. The enhancement of the CPP-GMR effects in the dual-spacer devices could be attributed to improved interfacial spin asymmetry. Moreover, it was observed that the CPP-GMR ratios increased monotonically as the temperatures decreased. At 4.2 K, a CPP-GMR ratio of 41% (ΔRA = 10.5 mΩ μm2) was achieved in the dual-spacer CPP-GMR device. This work indicates that multispacer structures provide an efficient enhancement of CPP-GMR effects in half-metallic material-based CPP-GMR systems.

  12. Design of Ag@C@SnO2@TiO2 yolk-shell nanospheres with enhanced photoelectric properties for dye sensitized solar cells

    NASA Astrophysics Data System (ADS)

    Zhao, Peilu; Li, Dan; Yao, Shiting; Zhang, Yiqun; Liu, Fengmin; Sun, Peng; Chuai, Xiaohong; Gao, Yuan; Lu, Geyu

    2016-06-01

    The hierarchical Ag@C@SnO2@TiO2 nanospheres (ACSTS) have been successfully synthesized by deposition of SnO2 and TiO2 on the Ag@C templates layer by layer. The size of ACSTS is ca. 360 nm while the Ag@C cores have an average diameter of about 300 nm. The rough and porous shell structure consisting of SnO2 and TiO2 ensures a large specific surface area (115.5 m2 g-1). To demonstrate how such a unique structure might lead to more excellent photovoltaic property, several kinds of dye-sensitized solar cells (DSSCs) are also fabricated using different nanospheres based photoanodes. It is found that the ACSTS based DSSC exhibits an obvious improvement in cell performance. According to various technical characterization, the ACSTS can provide dual-functions of light absorption and charge transfer, hence resulting in an enhanced short-circuit photocurrent density of 18.68 mA cm-2 and a higher FF of 63% compared with other DSSCs. The ACSTS cell finally obtains a PCE of up to 8.62%, increasing by 70.4% and 10.2% than hollow TiO2 nanospheres and Ag@C@TiO2 nanospheres based cells, respectively. The improved photovoltaic properties of ACSTS cell can be mainly ascribed to the unique microstructure and the synergistic effect of the encapsulated Ag@C cores.

  13. Synthesis, crystal structure, electronic structure and electrical conductivity of La3GeSb0.31Se7 and La3SnFe0.61Se7

    NASA Astrophysics Data System (ADS)

    Assoud, Abdeljalil; Sankar, Cheriyedath Raj; Kleinke, Holger

    2014-12-01

    The selenides La3EM1-xSe7 (La6E2M2-xSe14) adopt the Ce6Al3.33S14 structure type. La3GeSb0.31Se7 and La3SnFe0.61Se7 crystallize in the non-centrosymmetric space group P63 with La replacing Ce in the 6c site, E = Ge or Sn replacing Al in the 2b site and M = Fe or Sb replacing the other, deficient Al site (2a). The structure contains La atoms in square antiprisms of Se atoms, isolated distorted [ESe4] tetrahedra, and face sharing distorted [MSe6] octahedra forming a linear chain along the c-axis with short M-M distances. Band structure calculations predict semiconducting character with different gaps, which was demonstrated by electrical conductivity measurements and reflected in their different colors.

  14. Enhancement of spin polarization via Fermi level tuning in Co{sub 2}MnSn{sub 1−x}Sb{sub x} (x = 0, 0.25. 0.5, 0.75, 1) Heusler alloys

    SciTech Connect

    Singh, Mukhtiyar Thakur, Jyoti; Kashyap, Manish K.; Saini, Hardev S.

    2014-04-24

    Full potential approach has been employed to tune Fermi level in Co{sub 2}MnSn{sub 1−x}Sb{sub x} (x = 0, 0.25, 0.5, 0.75, 1) Heulser alloys for enhancement of spin polarization and finding signature of half metallicity. Present density functional theory (DFT) based calculation indicates that stoichoimetric Heusler alloy, Co{sub 2}MnSn is not a half-metallic ferromagnet but the doping of Sb in it results in the shifting of E{sup F} in well-defined energy gap which leads the 100% spin polarization in the resultant alloys. The magnetism in present alloys is governed by localized moment on Mn atom mainly. The tuning of half-metallicity using doping can be proved as an ideal technique to search the new materials which can accomplish the need of spintronics.

  15. Impact of an Elevated Temperature Environment on Sn-Ag-Cu Interconnect Board Level High-G Mechanical Shock Performance

    NASA Astrophysics Data System (ADS)

    Lee, Tae-Kyu; Chen, Zhiqiang; Baty, Greg; Bieler, Thomas R.; Kim, Choong-Un

    2016-12-01

    The mechanical stability of Sn-Ag-Cu interconnects with low and high silver content against mechanical shock at room and elevated temperatures was investigated. With a heating element-embedded printed circuit board design, a test temperature from room temperature to 80°C was established. High impact shock tests were applied to isothermally pre-conditioned ball-grid array interconnects. Under cyclic shock testing, degradation and improved shock performances were identified associated with test temperature variation and non-solder mask defined and solder-mask defined pad design configuration differences. Different crack propagation paths were observed, induced by the effect of the elevated temperature test conditions and isothermal aging pre-conditions.

  16. Gas chromatography mass spectrometry study of hydrogen deuterium exchange reactions of volatile hydrides of As, Sb, Bi, Ge and Sn in aqueous media

    NASA Astrophysics Data System (ADS)

    D'Ulivo, Alessandro; Mester, Zoltan; Meija, Juris; Sturgeon, Ralph E.

    2006-07-01

    The H-D exchange processes in MH n or MD n hydrides (M = As, Sb, Bi, n = 3; M = Ge, Sn, n = 4) taking place when they are in contact with H 2O or D 2O solution at different pH or pD values (interval of pH = [0,13]) have been investigated using gas chromatography-mass spectrometry (GC-MS). MH n or MD n compounds were injected into the headspace of reaction vials (4-12 ml) containing 1-2 ml of buffered solution maintained under stirring or shaking conditions. The isotopic composition of the gaseous phase hydrides/deuterides was determined at regular intervals in the range of time 0-15 min. The MH n or MD n compounds were synthesized in separate vials and their purity was checked separately before injection into the reaction vials. The mass spectra were deconvoluted in order to estimate the relative abundance of each species formed following the H-D exchange process (AsH nD 3- n , SbH nD 3- n, BiH nD 3- n, n = 0-3; GeH nD 4- n, SnH nD 4- n, n = 0-4) and the relative abundance of H and D. In the investigated pH (or pD) interval arsanes and stibanes undergo H-D exchange in alkaline media for pH > 7. No H-D exchange was detected for the other hydrides, where the prevailing process is their decomposition in the aqueous phase. A reaction model, based on the formation of protonated or deprotonated intermediates is proposed for H-D exchange of MH n or MD n compounds placed in contact with H 2O or D 2O at different pH or pD values. The H-D exchange in the already formed hydrides can be source of the interference in mechanistic studies on hydride formation performed using labeled reagents; no H-D exchange was detected within the following pH intervals that can be considered free from interference: arsanes pH = [0,7), stibanes pH = [0,7), bismuthanes, germanes and stannanes pH = [0,13].

  17. Structural stability of ternary C22–Zr{sub 6}X{sub 2}Co (X=Al, Ga, Sn, As, Sb, Bi, Te) and C22–Zr{sub 6}Sn{sub 2}T′ (T′=Fe, Co, Ni, Cu) compounds

    SciTech Connect

    Colinet, Catherine; Crivello, Jean-Claude; Tedenac, Jean-Claude

    2013-09-15

    The crystal and electronic structures, and the thermodynamic properties of Zr{sub 6}X{sub 2}Co (X=Al, Ga, Sn, As, Sb, Bi, Te) and Zr{sub 6}Sn{sub 2}T′ (T′=Fe, Co, Ni, Cu) ternary compounds in the Fe{sub 2}P-type structure have been investigated by means of first principle calculations. The calculated structural parameters are in good agreement with the experimental data. The total electronic densities of states as well as the Bader charges of the atoms have been computed. Both electronic and size effects allow to explain the stability of the ternary Zr{sub 6}X{sub 2}Co (X=Al, Ga, Sn, As, Sb, Bi, Te) and Zr{sub 6}Sn{sub 2}T′ (T′=Fe, Co, Ni, Cu) compounds. - Graphical abstract: Valence charge electronic localization function (ELF) calculated for Zr{sub 6}Sb{sub 2}Co compound. Display Omitted - Highlights: • Structural stability of Zr{sub 6}X{sub 2}T′ compounds (X: p element, T′: late transition metal) in the Fe{sub 2}P-type structure. • First principles calculation of lattice parameters and enthalpies of formation. • Electronic densities of state in the series Zr{sub 6}Sn{sub 2}T′ (T′=Fe, Co, Ni, Cu). • Electronic densities of state in the series Zr{sub 6}X{sub 2}Co (X=Al, Ga, Sn, As, Sb, Bi, Te)

  18. Creep properties of Sn-Ag solder joints containing intermetallic particles

    NASA Astrophysics Data System (ADS)

    Choi, S.; Lee, J. G.; Guo, F.; Bieler, T. R.; Subramanian, K. N.; Lucas, J. P.

    2001-06-01

    The creep behavior of the eutectic tin-silver joints and tin-silver composite solder joints containing 20 vol.% of Cu6Sn5, Ni3Sn4, and FeSn2 intermetallic reinforcements introduced by in-situ methods was investigated. These creep tests were carried out using single shear lap solder joints at room temperature, 85°C, and 125°C. The creep resistance was similar in magnitude for all alloys, and with increasing temperature, the stressexponents decreased in a manner consistent with power-law breakdown behavior. The FeSn2 intermetallic reinforced composite solder was found to be the most creep-resistant alloy at room temperature. Creep failure was observed to occur within the solder matrix in all these solder joints. Although a detailed analysis of the processes involved was difficult because of smearing of the features in the fracture surface, there were indications of grain-boundary separation, ductile fracture, and interfacial separation.

  19. The effect of micro alloying on the microstructure evolution of Sn-Ag-Cu lead-free solder

    NASA Astrophysics Data System (ADS)

    Werden, Jesse

    coarsening kinetics of SAC305, SAC+Zn, SAC+Mn, and SAC+Sb are all much slower than Pb-Sn alloys, therefore, power aging the solder will not be a viable method of stabilizing the microstructure. However, adding small amounts of Zn or Mn may be useful to maintain the original microstructure so that power aging is not required.

  20. Enhanced thermoelectric performance in the p-type half-Heusler (Ti/Zr/Hf)CoSb0.8Sn0.2 system via phase separation.

    PubMed

    Rausch, Elisabeth; Balke, Benjamin; Ouardi, Siham; Felser, Claudia

    2014-12-14

    A novel approach for optimization of the thermoelectric properties of p-type Heusler compounds with a C1b structure was investigated. A successful recipe for achieving intrinsic phase separation in the n-type material based on the TiNiSn system is isoelectronic partial substitution of Ti with its heavier homologues Zr and Hf. We applied this concept to the p-type system MCoSb0.8Sn0.2 by a systematic investigation of samples with different compositions at the Ti position (M = Ti, Zr, Hf, Ti0.5Zr0.5, Zr0.5Hf0.5, and Ti0.5Hf0.5). We thus achieved an approximately 40% reduction of the thermal conductivity and a maximum figure of merit ZT of 0.9 at 700 °C. This is a 80% improvement in peak ZT from 0.5 to 0.9 at 700 °C compared to the best published value of an ingot p-type half-Heusler compound. Thus far, comparable good thermoelectric p-type materials of this structure type have only been realized by a nanostructuring process via ball milling of premelted ingot samples followed by a rapid consolidation method, like hot pressing. The herein-presented simple arc-melting fabrication method reduces the fabrication time as compared to this multi-step nanostructuring process. The high mechanical stability of the Heusler compounds is favorable for the construction of thermoelectric modules. The Vickers hardness values are close to those of the n-type material, leading to good co-processability of both materials.

  1. The thermodynamic, electronic and magnetic properties of Ni2MnX (X=Ge, Sn, Sb) Heusler alloys: a quasi-hormonic Debye model and first principles study

    NASA Astrophysics Data System (ADS)

    Li, Jia; Zhang, Zhidong; Sun, Yubao; Zhang, Jian; Zhou, Guoxiang; Luo, Hongzhi; Liu, Guodong

    2013-01-01

    The thermodynamic, electronic and magnetic properties of Ni2MnX (X=Ge, Sn, Sb) Heusler alloys are investigated using the quasi-hormonic Debye model and the first principles calculation based on the density-functional-theory. The calculated results of the temperature dependent bulk modulus, coefficient of thermal expansion and the P-V relation for Ni2MnX (X=Ge, Sn, Sb) indicate that the bonding strength becomes stronger along the sequence of Ni2MnSb→Ni2MnSn→Ni2MnGe. The slower change trend of temperature dependent heat capacity of Ni2MnGe than that of Ni2MnSn and Ni2MnSb stems from the larger contribution of electronic heat capacity and smaller contribution of lattice heat capacity compared to the other two alloys. The ferromagnetic coupling order between the Ni and Mn is confirmed by our first principles calculations. The total moments in one primitive cell for the three alloys are all about 4.0 μB which are mainly carried by Mn atom with about 3.5 μB as can be seen from the magnetization density distribution.

  2. Electrochemical degradation of the β-blocker metoprolol by Ti/Ru 0.7 Ir 0.3 O 2 and Ti/SnO 2-Sb electrodes.

    PubMed

    Radjenovic, Jelena; Escher, Beate I; Rabaey, Korneel

    2011-05-01

    Electrochemical oxidation has been proposed for the elimination of pesticides, pharmaceuticals and other organic micropollutants from complex waste streams. However, the detrimental effect of halide ion mediators and the generation of halogenated by-products in this process have largely been neglected thus far. In this study, we investigated the electrochemical oxidation pathways of the β-blocker metoprolol in reverse osmosis concentrate (ROC) from a water reclamation plant using titanium anodes coated with Ru(0.7)Ir(0.3)O(2) or SnO(2)-Sb metal oxide layers. The results of liquid chromatography-mass spectrometry analysis indicated that irrespective of the electrode coating the same oxidant species participated in electrochemical transformation of metoprolol in ROC. Although Ti/SnO(2)-Sb exhibited higher oxidizing power for the same applied specific electrical charge, the generation of large fractions of chloro-, chloro-bromo- and bromo derivatives was observed for both electrode coatings. However, degradation rates of metoprolol and its degradation products were generally higher for the Ti/SnO(2)-Sb anode. Chemical analyses of metoprolol and its by-products were complemented with bioanalytical tools in order to investigate their toxicity relative to the parent compound. Results of the bioluminescence inhibition test with Vibrio fischeri and the combined algae test with Pseudokirchneriella subcapitata indicated a substantial increase in non-specific toxicity of the reaction mixture due to the formed halogenated by-products, while the specific toxicity (inhibition of photosynthesis) remained unchanged.

  3. In situ heating transmission electron microscopy observation of nanoeutectic lamellar structure in Sn-Ag-Cu alloy on Au under-bump metallization.

    PubMed

    Seo, Jong-Hyun; Yoon, Sang-Won; Kim, Kyou-Hyun; Chang, Hye-Jung; Lee, Kon-Bae; Seong, Tae-Yeon; Fleury, Eric; Ahn, Jae-Pyoung

    2013-08-01

    We investigated the microstructural evolution of Sn(96.4)Ag(2.8)Cu(0.8) solder through in situ heating transmission electron microscopy observations. As-soldered bump consisted of seven layers, containing the nanoeutectic lamella structure of AuSn and Au₅Sn phases, and the polygonal grains of AuSn₂ and AuSn₄, on Au-plated Cu bond pads. Here, we found that there are two nanoeutectic lamellar layers with lamella spacing of 40 and 250 nm. By in situ heating above 140°C, the nanoeutectic lamella of AuSn and Au₅Sn was decomposed with structural degradation by sphering and coarsening processes of the lamellar interface. At the third layer neighboring to the lamella layer, on the other hand, Au₅Sn particles with a zig-zag shape in AuSn matrix became spherical and were finally dissipated in order to minimize the interface energy between two phases. In the other layers except both lamella layers, polycrystal grains of AuSn₂ and AuSn₄ grew by normal grain growth during in situ heating. The high interface energy of nanoeutectic lamella and polygonal nanograins, which are formed by rapid solidification, acted as a principal driving force on the microstructural change during the in situ heating.

  4. Measurement of the topological surface state optical conductance in bulk-insulating Sn-doped Bi1.1Sb0.9Te2S single crystals

    NASA Astrophysics Data System (ADS)

    Cheng, Bing; Wu, Liang; Kushwaha, S. K.; Cava, R. J.; Armitage, N. P.

    2016-11-01

    Topological surface states have been extensively observed via optics in thin films of topological insulators. However, in typical thick single crystals of these materials, bulk states are dominant and it is difficult for optics to verify the existence of topological surface states definitively. In this Rapid Communication, we study the charge dynamics of the newly formulated bulk-insulating Sn-doped Bi1.1Sb0.9Te2S crystal by using time-domain terahertz spectroscopy. This compound shows much better insulating behavior than any other bulk-insulating topological insulators reported previously. The transmission can be enhanced an amount which is 5 % of the zero-field transmission by applying magnetic field to 7 T, an effect which we believe is due to the suppression of topological surface states. This suppression is essentially independent of the thicknesses of the samples, showing the two-dimensional nature of the transport. The suppression of surface states in field allows us to use the crystal slab itself as a reference sample to extract the surface conductance, mobility, charge density, and scattering rate. Our measurements set the stage for the investigation of phenomena out of the semiclassical regime, such as the topological magnetoelectric effect.

  5. Effect of Ni and Au ion irradiations on structural and optical properties of nanocrystalline Sb-doped SnO2 thin films

    NASA Astrophysics Data System (ADS)

    Mir, Feroz A.; Batoo, Khalid Mujasam

    2016-04-01

    The effect of shift heavy ion irradiations on the structural and optical properties of 6 % Sb-doped SnO2 thin films deposited on quartz substrate by electron beam evaporation technique is presented. Two ion species Ni and Au with energy 120 MeV and fluence of 1 × 1013 ion/cm2 were used. These films were characterized by X-ray diffraction, atomic force microscope, UV-visible and micro-Raman spectroscopy. From structural analysis, these films exhibit tetragonal rutile structure and retain it even after irradiation. The ion irradiations have shown improvement in the structural properties, such as increase in grain size and decrease in the lattice strain. Raman study also indicates enhancement in quality of crystal structure after irradiations. The grain growth after ion interaction is also observed by atomic force microscope study. Further, a variation in optical band gap and reduction in disorder is observed after irradiation. Other parameters such as Urbach tails energy and steepness parameter are obtained from optical data. The overall observed physical properties show a significant improvement after irradiation. A good correspondence between structures with its various properties can be seen.

  6. Sol-gel-deposited Sb-doped SnO2 as transparent anode for OLED: process, patterning, and hole injection characteristics

    NASA Astrophysics Data System (ADS)

    Vaufrey, David; Ben Khelifa, M.; Besland, Marie-Paule; Sandu, C.; Blanchin, Marie-Genevieve; Teodorescu, Valentin S.; Roger, Jean-Alain; Tardy, Jacques

    2002-02-01

    This paper reports on the potentialities of sol-gel deposited Sb doped SnO2(T)) as a new transparent conducting oxide (TCO) for anode in organic light emitting diodes (OLED). Multilayered films with transparency over 85% and resistivity lower than 5 103(Omega) -cm were obtained. Structural observations by Transmission Electron Microscopy (TEM) show that the films are nanocrystallized. Smaller and more uniform grains are obtained upon rapid thermal annealing. Atomic Force Microscopy (AFM) imaging shows the surface roughness does not exceed 20 A. TO films are very stable and cannot be chemically etched. Anode patterning by reactive ion etching (RIE) in a Methane- Hydrogen plasma has been experienced and is described. Typical etching around 250 A/min were obtained. TO/PEDOT/PVK/Al hole only diodes were realized to assess sol gel TO films as hole injection electrodes. Devices with threshold voltages of 6 volts were obtained. A comparison with ITO deposited by low temperature cathodic sputtering is given.

  7. Quantitative investigation of bonding characteristics in ternary Zintl anions: charge and energy analysis of [Sn2E(15)(2)(ZnPh)](-) (E(15) = Sb, Bi) and [Sn2Sb5(ZnPh)2](3-).

    PubMed

    Raupach, Marc; Dehnen, Stefanie; Tonner, Ralf

    2014-05-30

    The analysis of chemical bonding in Zintl anions and complexes thereof is mostly based on frontier molecular orbital (FMO) analysis. While this approach delivers remarkable insights, it falls short of providing quantitative measures for chemical bonding in these compounds. Here, we investigate the organozinc-ligated Zintl anions [Sn2E(15)2(ZnPh)](-) (E(15) = Sb, Bi) and [Sn2Sb5(ZnPh)2](3-) with charge and energy analysis methods. Partial charge analysis confirms that natural population analysis is more reliable than the Hirshfeld method for the diffuse charge density of the Zintl anions. In a subsequent step, the combined method energy decomposition analysis with natural orbitals for chemical valence is used to deliver quantitative results for the chemical bond between the organozinc fragment and the Zintl anionic cage. From this analysis, we conclude that the shared-electron description represents the chemical bonding in these compounds more appropriate. The bonding is characterized by a σ-type bond polarized toward the ZnPh fragment and a strong π-donation (15-20% of orbital interaction) into the p-orbitals at zinc. Electrostatic contributions, which are not considered in FMO analyses, make up around two-thirds of the attractive metal-ligand interaction and should not be neglected in the discussion of chemical bonding in these compounds. Usage of ligands with better σ- or π-accepting ability might thus serve to further stabilize the interesting class of compounds with multinary Zintl anions in the future.

  8. Synthesis, Characterization and Photocatalytic Activity of Ag(+) and Sn(2+) Doped KTi0.5 Te1.5 O6.

    PubMed

    Guje, Ravinder; Gundeboina, Ravi; Reddy, Jitta Raju; Veldurthi, Naveen Kumar; Kurra, Sreenu; Vithal, Muga

    2015-12-28

    In this study, the photocatalytic dye degradation efficiency of KTi0.5 Te1.5 O6 synthesized through solid state method was enhanced by cation (Ag(+) /Sn(+2) ) doping at potassium site via ion exchange method. As prepared materials were characterized by XRD, SEM-EDS, IR, TGA, and UV-Vis Diffuse reflectance spectroscopic (DRS) techniques. All the compounds were crystallized in cubic lattice with space group. The bandgap energies of parent, Ag(+) and Sn(+2) doped KTi0.5 Te1.5 O6 materials obtained from DRS profiles were found to be 2.96, 2.55 and 2.40 eV respectively. Photocatalytic efficiency of parent, Ag(+) and Sn(+2) doped materials was evaluated against the degradation of methylene blue (MB) and methyl violet (MV) dyes under visible light irradiation. The Sn(+2) doped KTi0.5 Te1.5 O6 showed higher activity towards the degradation of both MB and MV dyes and its higher activity is ascribed to the lower bandgap energy compared to the parent and Ag(+) doped KTi0.5 Te1.5 O6 . The mechanistic degradation pathway of methylene blue (MB) was studied in the presence of Sn(2+) doped KTi0.5 Te1.5 O6 . Quenching experiments were performed to know the participation of holes, super oxide and hydroxyl radicals in the dye degradation process. The stability and reusability of the catalysts were studied. This article is protected by copyright. All rights reserved.

  9. TEM study on the interfacial reaction between electroless plated Ni-P/Au UBM and Sn-3.5Ag solder

    NASA Astrophysics Data System (ADS)

    Park, Min-Ho; Kwon, Eun-Jung; Kang, Han-Byul; Jung, Seung-Boo; Yang, Cheol-Woong

    2007-06-01

    This study examined the interfacial reaction between electroless plated Ni-P/Au under bump metallization (UBM) and a eutectic Sn-3.5Ag solder using scanning electron microscopy (SEM) and transmission electron microscopy (TEM). The chemical and crystallographic analysis using TEM provided important information on the microstructural evolution at the interface. In this study, UBM was prepared by the electroless plating of Au (0.15 μm)/Ni-15 at %P (5 μm) on a bare Cu substrate and was then reacted with a Sn-3.5Ag eutectic solder at 260°C for various amounts of time to examine the different sequential stages of the interfacial reaction TEM analyses confirmed that beside the Ni3Sn4 layer, there were three more IMC layers at the interface: the Ni-Sn-P ternary layer, Ni3P layer, and the layer of phase mixture of the Ni3P and Ni2SnP ternary phases.

  10. An X-ray Radiography Study of the Effect of Thermal Cycling on Damage Evolution in Large-Area Sn-3.5Ag Solder Joints

    NASA Astrophysics Data System (ADS)

    Muralidharan, Govindarajan; Kurumaddali, Kanth; Kercher, Andrew K.; Walker, Larry; Leslie, Scott G.

    2013-02-01

    There is a need for next-generation, high-performance power electronic packages and systems utilizing wide-band-gap devices to operate at high temperatures in automotive and electricity transmission applications. Sn-3.5Ag solder is a candidate for use in such packages with potential maximum operating temperatures of about 200°C. However, there is a need to understand the thermal cycling reliability of Sn-3.5Ag solders subject to such high-temperature operating conditions. The results of a study on the damage evolution occurring in large-area Sn-3.5Ag solder joints between silicon dies and direct bonded copper substrates with Au/Ni-P metallization subject to thermal cycling between 200°C and 5°C are presented in this paper. Interface structure evolution and damage accumulation were followed using high-resolution X-ray radiography, cross-sectional optical and scanning electron microscopies, and X-ray microanalysis in these joints for up to 3000 thermal cycles. Optical and scanning electron microscopy results showed that the stresses introduced by the thermal cycling result in cracking and delamination at the copper-intermetallic compound interface. X-ray microanalysis showed that stresses due to thermal cycling resulted in physical cracking and breakdown of the Ni-P barrier layer, facilitating Cu-Sn interdiffusion. This interdiffusion resulted in the formation of Cu-Sn intermetallic compounds underneath the Ni-P layer, subsequently leading to delamination between the Ni-rich layer and Cu-Sn intermetallic compounds.

  11. Self-assembly of Sn-3Ag-0.5Cu Solder in Thermoplastic Resin Containing Carboxyl Group and its Interconnection

    NASA Astrophysics Data System (ADS)

    Miyauchi, Kazuhiro; Yamashita, Yukihiko; Suzuki, Naoya; Takano, Nozomu

    2014-09-01

    The self-assembly of solder powder on pads is attractive as a novel interconnection method between chips and substrates. However, the solder used in this method is limited to Sn-58Bi and Sn-52In. In contrast, Sn-3Ag-0.5Cu has been relatively less studied despite its wide use as a lead-free solder in assembling semiconductor packages. Hence, here, polymeric materials incorporating Sn-3Ag-0.5Cu solder powder were investigated for the self-assembly of the solder on pads at temperatures up to 260°C in a lead-free reflow process. The self-assembly of the solder was observed with an optical microscope through transparent glass chips placed on substrates covered with the polymeric materials incorporating the solder powder. Differential scanning calorimetry measurements were performed to confirm the behaviors of the reaction of the resins and the melting of the solder. When epoxy resin with a fluxing additive was used as a matrix, self-assembly of the solder was prevented by the cross-linking reaction. Conversely, when thermoplastic resin containing carboxyl groups was used as a matrix, the self-assembly of solder was successfully achieved in the absence of fluxing additives. The shear strength of interconnection using reflowfilm with lamination was sufficient and significantly increased during the reflow process. However, the shear strength of the reflowfilm showed cohesive failure, possibly because of the brittle intermetallic compounds (Ag3Sn, Au4Sn) network in bulk was lower than that of conventional solder paste that showed interfacial failure after the reflow process with a rapid cooling rate.

  12. Void Evolution in Sub-100-Micron Sn-Ag Solder Bumps during Multi-reflow and Aging and its Effects on Bonding Reliability

    NASA Astrophysics Data System (ADS)

    Lin, Xiaoqin; Luo, Le

    2008-03-01

    The evolution of voids in the interfacial region of electroplated Sn-3.0Ag solder bumps on electroplated Cu and its effects on bonding reliability were studied. Results show that volume shrinkage resulted in void formation during multi-reflow, while the Kirkendall effect led to void formation during aging. A thick η-phase and voids at the boundaries among Cu6Sn5 grains promoted the void growth in the ɛ-phase. Though the formation of voids had a trivial weakening effect on the shear strength of the solder joints, the voids were a threat to the bonding reliability of solder bumps.

  13. Effect of cooling rate on microstructure and mechanical properties of eutectic Sn-Ag solder joints with and without intentionally incorporated Cu{sub 6}Sn{sub 5} reinforcements

    SciTech Connect

    Sigelko, J.; Choi, S.; Subramanian, K.N.; Lucas, J.P.; Bieler, T.R.

    1999-11-01

    Solidification of eutectic Sn-Ag solder, with and without Cu{sub 6}Sn{sub 5} composite reinforcements, on copper substrates, was investigated at two different cooling rates. The size, orientation, randomness, and overall morphology of the dendritic microstructure were examined as a function of cooling rate. Cu{sub 6}Sn{sub 5} particle reinforcements were found to act as nucleation sites for dendrites, in addition to sites on the substrate/solder interface. The mechanical properties of these solders were also examined as a function of cooling rate. Solder joints with a lower load-carrying area were found to exhibit higher shear strength, but reduced ductility when compared to solder joints with more load carrying area.

  14. Study of the effects of MeV Ag, Cu, Au, and Sn implantation on the optical properties of LiNbO3

    NASA Technical Reports Server (NTRS)

    Williams, E. K.; Ila, D.; Sarkisov, S.; Curley, M.; Poker, D. B.; Hensley, D. K.; Borel, C.

    1998-01-01

    The authors present the results of characterization of linear absorption and nonlinear refractive index of Au, Ag, Cu and Sn ion implantation into LiNbO3. Ag was implanted at 1.5 MeV to fluences of 2 to 17 x 17(exp 16)/sq cm at room temperature. Au and Cu were implanted to fluences of 5 to 20 x 10(exp 16)/sq cm at an energy of 2.0 MeV. Sn was implanted to a fluence of 1.6 x 10(exp 17)/sq cm at 160 kV. Optical absorption spectrometry indicated an absorption peak for the Au implanted samples after heat treatment at 1,000 C at approx. 620 nm. The Ag implanted samples absorption peaks shifted from approx. 450 nm before heat treatment to 550 nm after 500 C for 1h. Heat treatment at 800 C returned the Ag implanted crystals to a clear state. Cu nanocluster absorption peaks disappears at 500 C. No Sn clusters were observed by optical absorption or XRD. The size of the Ag and Au clusters as a function of heat treatment were determined from the absorption peaks. The Ag clusters did not change appreciably in size with heat treatment. The Au clusters increased from 3 to 9 nm diameter upon heat treatment at 1000 C. TEM analysis performed on a Au implanted crystal indicated the formation of Au nanocrystals with facets normal to the c-axis. Measurements of the nonlinear refractive indices were carried out using the Z-scan method with a tunable dye laser pumped by a frequency doubled mode-locked Nd:YAG laser. The dye laser had a 4.5 ps pulse duration time and 76 MHz pulse repetition rate (575 nm).

  15. Neutron Scattering Investigation of Phonon Scattering Rates in Ag1-xSb1+xTe2+x (x = 0, 0.1, and 0.2)

    SciTech Connect

    Abernathy, Douglas L; Budai, John D; Delaire, Olivier A; Ehlers, Georg; Hong, Tao; Karapetrova, Evguenia A.; Ma, Jie; May, Andrew F; McGuire, Michael A; Specht, Eliot D

    2014-01-01

    The phonon dispersions and scattering rates of the thermoelectric material AgSbTe$_{2}$ were measured as a function of temperature with inelastic neutron scattering. The results show that phonon scattering rates are large and weakly dependent on temperature. The lattice thermal conductivity was calculated from the measured phonon lifetimes and group velocities, providing good agreement with bulk transport measurements. The measured phonon scattering rates and their temperature dependence are compared with models of phonon scattering by anharmonicity and point defect. We find that these processes cannot account for the large total phonon scattering rates observed, and their lack of temperature dependence. Neutron and synchrotron diffraction measurements on single crystals revealed an extensive nanostructure from cation ordering, which is likely responsible for the strong phonon scattering.

  16. Pressure induced silver ion displacement in La{sub 3}Ag{sub 0.82}SnS{sub 7}

    SciTech Connect

    Daszkiewicz, Marek; Gulay, Lubomir D.

    2012-02-15

    Highlights: Black-Right-Pointing-Pointer The silver ion shifts with increasing pressure in the direction of the central-point of sulphur trigonal antiprism. Black-Right-Pointing-Pointer Coordination number changes from CN = 3 to CN = 6 at {approx}3 GPa. Black-Right-Pointing-Pointer Zero-pressure bulk modulus is B{sub 0} = 61.74 GPa and the pressure derivative is B{sup Prime }{sub 0}=4.02. Black-Right-Pointing-Pointer No phase transition up to 4.5 GPa was detected. -- Abstract: The compounds with the general formula Ln{sub 3}MTX{sub 7} (space group P6{sub 3}) (Ln - rare-earth element, M - monovalent element (Cu, Ag), T - Si, Ge, Sn and X - S, Se) are interesting owing to the possible application in the field of ionic conductivity. In the crystal structure the face-sharing [Ag(S){sub 6}] triangular antiprisms form the channels where the Ag{sup +} ion can migrate along the crystallographic c axis. High-pressure X-ray diffraction shows that Ag{sup +} ion moves towards the central-point of [Ag(S){sub 6}] when pressure is risen. As a consequence, the coordination number of Ag{sup +} changes from CN = 3 to CN = 6 at {approx}3 GPa. The La{sub 3}Ag{sub 0.82}SnS{sub 7} has stiff structure; zero-pressure bulk modulus is B{sub 0} = 61.74 GPa and the pressure derivative is B{sup Prime }{sub 0}=4.02.

  17. Structural Evolution and Phase Stability of Hume-Rothery Phase in a Mechanically Driven Nanostructured Ag-15 at. pct Sn Alloy

    NASA Astrophysics Data System (ADS)

    Chithra, S.; Malviya, K. D.; Chattopadhyay, K.

    2013-10-01

    The paper reports phase evolution in mechanically driven Ag-15 at. pct Sn alloy powder starting with elemental powders in order to establish the feasibility of designing nanocomposites of a Ag-Sn solid solution. This alloy lies in the phase field of the hexagonal ζ-phase which is a well-known Hume-Rothery electron compound with an electron-to-atom ratio of about 1.45 and hexagonal crystal structure (a = 0.2966 nm, c = 0.4782 nm). Through a systematic use of X-ray diffraction and transmission electron microscopy, the results establish the formation of the ζ-phase which co-exists with the Ag solid solution during the initial phase of milling. Mechanical milling for long duration (55 hours) destabilizes the ζ-phase. A complete solid solution of Ag with a grain size of ~8 nm could be achieved after 60 hours of milling. Additional milling can induce decomposition of the solid solution that results in a reappearance of ζ-phase. We present a detailed thermodynamic calculation which indicates that complete Ag solid solution of the present alloy composition would be possible if the crystallites size can be reduced below a certain critical size. In particular, we show that both Ag and ζ-phase grain sizes need to be taken into account for determining the metastable equilibrium and the phase change that has been experimentally observed. Finally, we argue that recrystallization processes set a limit to the achievable size of the nanoparticles with metastable Ag solid solution.

  18. A novel hydrogen bonded bimetallic supramolecular coordination polymer {[SnMe3(bpe)][Ag(CN)2] · 2H2O} as anticancer drug.

    PubMed

    Etaiw, Safaa El-Din H; Sultan, Ahmed S; Badr El-Din, Ahmed S

    2011-11-01

    The reaction of Me(3)SnCl, K(3)[Ag(CN)(4)] and 1,2-bis(4-pyridyl)ethane (bpe) in water/CH(3)CN solution at room temperature affords the novel bimetallic supramolecular coordination polymer (SCP) {[SnMe(3)(bpe)] [Ag(CN)2] · 2H(2)O}(n), 1. The structure of 1 consists of cationic {-Sn(Me(3))-bpe-}(+) chains that are neutralized by [Ag(CN)(2)](-) anions. The dicyanoargentate(I) anions present discrete uncoordinated fragments between the cationic chains. The water molecules bind the cationic chains and the anions forming 3D-supramolecular structure through hydrogen bonds. 1 exhibits strong fluorescence in the solid state at room temperature. The 3-(4,5-dimethylthiazol-2-yl)-2,5-diphenyltetrazolium bromide (MTT) assay was used to determine the in vitro antitumor effects of the SCP 1 on human breast cancer cell line, T-47D. Cell cycle analysis revealed that the SCP 1 induced apoptosis in T-47D breast cancer cell line. Moreover, in vivo, the SCP 1 showed tumor growth inhibition in rat model that developed mammary carcinoma by 44.8% compared to the vehicle treated control. Thus, the SCP 1 exhibits specific in vivo and in vitro antitumor effects.

  19. Stability of molybdenum nanoparticles in Sn-3.8Ag-0.7Cu solder during multiple reflow and their influence on interfacial intermetallic compounds

    SciTech Connect

    Haseeb, A.S.M.A. Arafat, M.M. Johan, Mohd Rafie

    2012-02-15

    This work investigates the effects of molybdenum nanoparticles on the growth of interfacial intermetallic compound between Sn-3.8Ag-0.7Cu solder and copper substrate during multiple reflow. Molybdenum nanoparticles were mixed with Sn-3.8Ag-0.7Cu solder paste by manual mixing. Solder samples were reflowed on a copper substrate in a 250 Degree-Sign C reflow oven up to six times. The molybdenum content of the bulk solder was determined by inductive coupled plasma-optical emission spectrometry. It is found that upon the addition of molybdenum nanoparticles to Sn-3.8Ag-0.7Cu solder, the interfacial intermetallic compound thickness and scallop diameter decreases under all reflow conditions. Molybdenum nanoparticles do not appear to dissolve or react with the solder. They tend to adsorb preferentially at the interface between solder and the intermetallic compound scallops. It is suggested that molybdenum nanoparticles impart their influence on the interfacial intermetallic compound as discrete particles. The intact, discrete nanoparticles, by absorbing preferentially at the interface, hinder the diffusion flux of the substrate and thereby suppress the intermetallic compound growth. - Highlights: Black-Right-Pointing-Pointer Mo nanoparticles do not dissolve or react with the SAC solder during reflow. Black-Right-Pointing-Pointer Addition of Mo nanoparticles results smaller IMC thickness and scallop diameter. Black-Right-Pointing-Pointer Mo nanoparticles influence the interfacial IMC through discrete particle effect.

  20. Reactions of Sn-3.5Ag-Based Solders Containing Zn and Al Additions on Cu and Ni(P) Substrates

    NASA Astrophysics Data System (ADS)

    Kotadia, H. R.; Mokhtari, O.; Bottrill, M.; Clode, M. P.; Green, M. A.; Mannan, S. H.

    2010-12-01

    In this study we consider the effect of separately adding 0.5 wt.% to 1.5 wt.% Zn or 0.5 wt.% to 2 wt.% Al to the eutectic Sn-3.5Ag lead-free solder alloy to limit intermetallic compound (IMC) growth between a limited volume of solder and the contact metallization. The resultant solder joint microstructure after reflow and high-temperature storage at 150°C for up to 1000 h was investigated. Experimental results confirmed that the addition of 1.0 wt.% to 1.5 wt.% Zn leads to the formation of Cu-Zn on the Cu substrate, followed by massive spalling of the Cu-Zn IMC from the Cu substrate. Growth of the Cu6Sn5 IMC layer is significantly suppressed. The addition of 0.5 wt.% Zn does not result in the formation of a Cu-Zn layer. On Ni substrates, the Zn segregates to the Ni3Sn4 IMC layer and suppresses its growth. The addition of Al to Sn-3.5Ag solder results in the formation of Al-Cu IMC particles in the solder matrix when reflowed on the Cu substrate, while on Ni substrates Al-Ni IMCs spall into the solder matrix. The formation of a continuous barrier layer in the presence of Al and Zn, as reported when using solder baths, is not observed because of the limited solder volumes used, which are more typical of reflow soldering.

  1. Low-Cycle Fatigue Behavior of 95.8Sn-3.5Ag-0.7Cu Solder Joints

    NASA Astrophysics Data System (ADS)

    Tang, Y.; Li, G. Y.; Shi, X. Q.

    2013-01-01

    Low-cycle fatigue (LCF) behavior of 95.8Sn-3.5Ag-0.7Cu solder joints was investigated over a range of test temperatures (25°C, 75°C, and 125°C), frequencies (0.001 Hz, 0.01 Hz, and 0.1 Hz), and strain ranges (0.78%, 1.6%, and 3.1%). Effects of temperature and frequency on the LCF life were studied. Results show that the LCF lifetime decreases with an increase in test temperature or a decrease of test frequency, which is attributed to the longer exposure time to creep and the stress relaxation mechanism during fatigue testing. A modified Coffin-Manson model considering effects of temperature and frequency on the LCF life is proposed. The fatigue exponent and ductility coefficient were found to be influenced by both the temperature and frequency. By fitting the experimental data, the mathematical relations between the fatigue exponent and temperature, and ductility coefficient and temperature, were analyzed. Scanning electron microscopy (SEM) of the cross-sections and fracture surfaces of failed specimens at different temperature and frequency was applied to verify the failure mechanisms.

  2. Hardening by cooling rate control and post-firing heat treatment in Pd-Ag-Sn alloy for bonding porcelain.

    PubMed

    Yu, Young-Jun; Seol, Hyo-Joung; Cho, Mi-Hyang; Kim, Hyung-Il; Kwon, Yong Hoon

    2016-01-01

    The aim of this study was to determine the hardening effect by controlling the cooling rate during the porcelain firing process and performing an additional post-firing heat treatment in a Pd-Ag-Sn alloy. The most effective cooling rate for alloy hardening was determined by cooling the specimens at various cooling rates after oxidation treatment. A subsequent porcelain firing simulation followed by cooling at the selected cooling rate was performed. A post-firing heat treatment was then done at 600°C in a porcelain furnace. The hardening mechanism was characterized by a hardness test, X-ray diffraction, field emission scanning electron microscopy and energy dispersive X-ray spectroscopy. Alloy softening occurred during the porcelain firing process followed by cooling at a controlled cooling rate. A post-firing heat treatment allowed apparent precipitation hardening. It is advisable to perform a postfiring heat treatment at 600°C in a porcelain furnace by annealing metal substructure after porcelain fusing.

  3. Degradation of organic pollutants by Ag, Cu and Sn doped waste non-metallic printed circuit boards.

    PubMed

    Ramaswamy, Kadari; Radha, Velchuri; Malathi, M; Vithal, Muga; Munirathnam, Nagegownivari R

    2017-02-01

    The disposal and reuse of waste printed circuit boards have been the major global concerns. Printed circuit boards, a form of Electronic waste (hereafter e-waste), have been chemically processed, doped with Ag(+), Cu(2+) and Sn(2+), and used as visible light photocatalysts against the degradation of methylene blue and methyl violet. The elemental analyses of pristine and metal doped printed circuit board were obtained using energy dispersive X-ray fluorescence (EDXRF) spectra and inductively coupled plasma optical emission spectroscopy (ICP-OES). The morphology of parent and doped printed circuit board was obtained from scanning electron microscopy (SEM) measurements. The photocatalytic activity of parent and metal doped samples was carried out for the decomposition of organic pollutants, methylene blue and methyl violet, under visible light irradiation. Metal doped waste printed circuit boards (WPCBs) have shown higher photocatalytic activity against the degradation of methyl violet and methylene blue under visible light irradiation. Scavenger experiments were performed to identify the reactive intermediates responsible for the degradation of methylene blue and methyl violet. The reactive species responsible for the degradation of MV and MB were found to be holes and hydroxyl radicals. A possible mechanism of degradation of methylene blue and methyl violet is given. The stability and reusability of the catalysts are also investigated.

  4. Determination of the magnetic ground state in the martensite phase of Ni-Mn-Z (Z = In, Sn and Sb) off-stoichiometric Heusler alloys by nonlinear AC susceptibility.

    PubMed

    Umetsu, R Y; Fujita, A; Ito, W; Kanomata, T; Kainuma, R

    2011-08-17

    DC and AC magnetic measurements were carried out to clarify the difference in the magnetic ground state depending on the kinds of Z element used in the martensite phase in Ni-Mn-Z (Z = In, Sn and Sb) off-stoichiometric Heusler alloys. Magnetic field cooling effects were observed in the DC thermomagnetization curves in the low temperature regions, and a frequency dependence on AC susceptibility was also observed in both real and imaginary parts of the susceptibility. Negative divergence was clearly observed in nonlinear AC susceptibility only for the Ni(50)Mn(40)Sb(10) alloy, suggesting that the magnetic feature of its ground state is the spin-glass state. The magnetic ground state of the martensite phase in these alloys would relate to the magnetic configuration of the Mn atoms in the ferromagnetic austenite phase.

  5. Development of Ag-Pd-Au-Cu alloys for multiple dental applications. Part 2. Mechanical properties of experimental Ag-Pd-Au-Cu alloys containing Sn or Ga for ceramic-metal restorations.

    PubMed

    Goto, S; Nakai, A; Miyagawa, Y; Ogura, H

    2001-06-01

    Eighteen Ag-Pd-Au-Cu alloys, consisting of nine Ag-Pd-Au-Cu mother compositions (Pd: 20, 30 or 40%, Au: 20%, Cu: 10, 15 or 20%, Ag: balance) containing either 5% Sn or 5% Ga as an additive metal, were experimentally prepared. Tensile strength, proof stress, elongation, elastic modulus, and Vickers hardness of these alloys were evaluated to clarify the potential of these alloys for use as ceramic-metal restorations as well as the effects of the Pd and Cu contents on their mechanical properties. The tensile strength, proof stress, elongation, elastic modulus and Vickers hardness of the 18 experimental alloys were in the range of 410.0-984.0 MPa, 289.7-774.3 MPa, 2.2-23.7%, 81.3-123.0 GPa and 135.7-332.3 HV1, respectively. Ten of the 18 experimental alloys can be used for ultra-low fusing ceramics based on their proof stress, elastic modulus, elongation and hardness. Between the Ga- and Sn-added alloys, differences in tensile strength, proof stress, elongation and hardness were found at several Ag-Pd-Au-Cu compositions.

  6. Effects of Annealing, Thermomigration, and Electromigration on the Intermetallic Compounds Growth Kinetics of Cu/Sn-2.5Ag Microbump.

    PubMed

    Kim, Seung-Hyun; Park, Gyu-Tae; Park, Jong-Jin; Park, Young-Bae

    2015-11-01

    The effects of annealing, thermomigration (TM), and electromigration (EM) on the intermetallic com- pound (IMC) growth kinetics of Cu/Sn-2.5Ag microbumps were investigated using in-situ scanning electron microscopy at 120-165 degrees C with a current density of 1.5 x 10(5) A/cm2. The IMC growth kinetics was controlled by a diffusion-dominant mechanism and a chemical-reaction-dominant mechanism with annealing and current-stressing conditions, respectively. Before all of the Sn was fully transformed into IMCs, the activation energies of the Cu3Sn IMCs were 0.54 eV, 0.50 eV, and 0.40 eV for annealing, TM, and EM, respectively, which is closely related to the acceleration effect of the interfacial reaction by electron wind force under current stressing. After all of the Sn was fully transformed into IMCs by reacting with Cu, the Cu3Sn IMC growth rates of the three structures became similar due to the reduced and similar diffusion rates inside the IMCs with and without current stressing.

  7. New Interest in Intermetallic Compound ZnSb

    NASA Astrophysics Data System (ADS)

    Fedorov, M. I.; Prokof'eva, L. V.; Pshenay-Severin, D. A.; Shabaldin, A. A.; Konstantinov, P. P.

    2014-06-01

    The intermetallic compound ZnSb has been known since the 1830s. It has semiconductor properties, but its mechanical, thermal, and chemical properties are very close to those of a metallic alloy. When thermoelectrics based on (BiSb)2(TeSe)3 solid solutions were created, interest in ZnSb subsided. However, the current situation is different, as tellurium has become expensive and rare. Moreover, its compounds are too toxic, and it is too difficult to produce such materials and devices from these solid solutions. Recently, n-type material based on Mg2(SnSi) solid solution was proposed in the Laboratory of Physics for Thermoelements of the Ioffe Physical-Technical Institute. This material together with ZnSb may form a promising couple for creating various thermoelectric modules. In this paper, various properties (Hall and Seebeck coefficients, electrical and thermal conductivities) are reported in the temperature range from 80 K to 797 K. Different acceptor impurities have been tested. The Hall concentration at room temperature varied from 1.5 × 1018 cm-3 to 2.7 × 1019 cm-3. Some features have been discovered in the behavior of the thermoelectric parameters of double-doped ZnSb samples at temperatures above 500 K. Their nature points to a temperature-dependent increase of the Hall concentration. The existence of two temperature ranges with additional doping is revealed by Hall coefficient and electrical conductivity measurements in the range from 80 K to 797 K. The experimental data are discussed based on a model of the energy spectrum with impurity and native defect states localized in the energy gap. It is shown that the dimensionless thermoelectric figure of merit of ZnSb: Cd, Ag, Sn is not less than 1.0 at 600 K.

  8. The Measurement of Thermal Conductivity Variation with Temperature for Sn-Based Lead-Free Binary Solders

    NASA Astrophysics Data System (ADS)

    Demir, Mustafa; Aksöz, Sezen; Öztürk, Esra; Maraşlı, Necmettin

    2014-10-01

    The variations of thermal conductivity with temperature in the Sn-based lead-free binary solders, Sn-10 wt pct X (X = Ag, In, Bi, Cu, Sb, Zn), were measured by using the linear heat flow apparatus. The thermal conductivities of Sn-based lead-free solders at their melting temperature were obtained from graphs of thermal conductivity variation with temperature. The variations of electrical conductivity with temperature for same solders were also determined from the Wiedemann-Franz (W-F) equation by using the measured values of thermal conductivity.

  9. Doppler-shift attenuation method lifetime measurements in 115Sb and 117Sb

    NASA Astrophysics Data System (ADS)

    Bucurescu, D.; Căta-Danil, I.; Ilaş, G.; Ivaşcu, M.; Stroe, L.; Ur, C. A.

    1995-08-01

    The lifetimes of several low-lying excited levels in 115Sb and 117Sb have been measured by using the DSA method in the 115,117Sn(p,nγ)115,117Sb reactions, respectively. The structure of these nuclei is discussed in the frame of the interacting boson-fermion model.

  10. Effect of additive metals, Sn, Ga, and In in Ag-Pd-Au-Cu alloys on initial bond strength of 4-META adhesive cement to these alloys.

    PubMed

    Goto, Shin-ichi; Churnjitapirom, Pornkiat; Miyagawa, Yukio; Ogura, Hideo

    2008-09-01

    The purpose of this study was to investigate the effects of three additives, Sn, Ga, and In, as well as the main constituents, Pd and Cu, of Ag-Pd-Au-Cu alloys on the initial bond strength of 4-META adhesive cement to these alloys. The Ag-Pd-Au-Cu alloys consisted of 20%, 30% or 40% Pd, and 10%, 15% or 20% Cu, 20% Au, and Ag as balance. Besides, additive metals (Sn, Ga, and In) of 2% and 4% were added to these compositions. The addition of three additives, in general, increased the initial bond strength of the cement in comparison to the mother compositions (0% additives), although the degrees of effectiveness of the three additives were different and varied with their contents. Among these additives, a remarkable increase in bond strength was observed with the addition of In. The increase in Cu content, in many cases, resulted in an increase in bond strength at high Pd contents (30% and 40%), but a decrease at low Pd content (20%) in some cases. The positive effects of the three additives and Cu could be due to the formation of a suitable oxide layer for strong bonding with 4-META.

  11. Effects of heat treatments and Sn, Ga and In additives on mechanical properties of 35Ag-30Pd-20Au-15Cu alloy.

    PubMed

    Churnjitapirom, Pornkiat; Goto, Shin-ichi; Ogura, Hideo

    2004-12-01

    The mechanical properties of six 35Ag-30Pd-20Au-15Cu alloys containing different contents (2% and 4%) of Sn, Ga, or In and a 35Ag-30Pd-20Au-15Cu alloy without additives were evaluated. These alloys were subjected to four different heat treatments before a mechanical test. The distribution of the elements and their contents were analyzed. The mechanical properties of 35Ag-30Pd-20Au-15Cu alloy changed in wide-ranging ways with different heat treatments and with different additive contents. The effects of heat treatment on tensile strength and hardness significantly varied with different additives and their contents. These different changes could be attributed to the formation of different phases in these alloys. Based on the high strength and wide-ranging changes in the mechanical properties when subjected to softening and hardening heat treatments, the 2% Sn-added, 2% In-added, and 4% Ga-added alloys can be recommended for different dental restorations such as crown & bridges, inlays, and denture frameworks.

  12. Evolution of Microstructure in Brazed Joints of Austenitic-Martensitic Stainless Steel with Pure Silver Obtained with Ag-27Cu-5Sn Brazing Filler Material

    NASA Astrophysics Data System (ADS)

    Gangadharan, S.; Sivakumar, D.; Venkateswaran, T.; Kulkarni, Kaustubh

    2016-12-01

    Brazing of an austenitic-martensitic stainless steel (AMSS) with pure silver was carried out at 1053 K, 1073 K, and 1093 K (780 °C, 800 °C, and 820 °C) with Ag-27Cu-5Sn (wt pct) as brazing filler material (BFM). Wettability of the liquid BFM over base AMSS surface was found to be poor. Application of nickel coating to the steel was observed to enhance the wettability and to enable the formation of a good bond between BFM and the steel. The mechanism responsible for enhanced metallurgical bonding of the BFM with AMSS in the presence of nickel coating was explained based on diffusional interactions and uphill diffusion of iron, chromium and nickel observed in the brazed microstructure. Good diffusion-assisted zone was observed to form on silver side at all three temperatures. Four phases were encountered within the joint including silver solid solution, copper solid solution, Cu3Sn intermetallic and Ni-Fe solid solution. The Cu3Sn intermetallic was present in small amounts in the joints brazed at 1053 K and 1073 K (780 °C and 800 °C). The joint formed at 1093 K (820 °C) exhibited the absence of Cu3Sn, fewer defects and larger diffusion-assisted zone. Hardness of base AMSS was found to reduce during brazing due to austenite reversion and post-brazing sub-zero treatment for 2.5 hours was found suitable to recover the hardness.

  13. Redefining the Speed Limit of Phase Change Memory Revealed by Time-resolved Steep Threshold-Switching Dynamics of AgInSbTe Devices

    PubMed Central

    Shukla, Krishna Dayal; Saxena, Nishant; Durai, Suresh; Manivannan, Anbarasu

    2016-01-01

    Although phase-change memory (PCM) offers promising features for a ‘universal memory’ owing to high-speed and non-volatility, achieving fast electrical switching remains a key challenge. In this work, a correlation between the rate of applied voltage and the dynamics of threshold-switching is investigated at picosecond-timescale. A distinct characteristic feature of enabling a rapid threshold-switching at a critical voltage known as the threshold voltage as validated by an instantaneous response of steep current rise from an amorphous off to on state is achieved within 250 picoseconds and this is followed by a slower current rise leading to crystallization. Also, we demonstrate that the extraordinary nature of threshold-switching dynamics in AgInSbTe cells is independent to the rate of applied voltage unlike other chalcogenide-based phase change materials exhibiting the voltage dependent transient switching characteristics. Furthermore, numerical solutions of time-dependent conduction process validate the experimental results, which reveal the electronic nature of threshold-switching. These findings of steep threshold-switching of ‘sub-50 ps delay time’, opens up a new way for achieving high-speed non-volatile memory for mainstream computing. PMID:27886266

  14. Control of Surface Plasmon Resonance of Au/SnO2 by Modification with Ag and Cu for Photoinduced Reactions under Visible-Light Irradiation over a Wide Range.

    PubMed

    Tanaka, Atsuhiro; Hashimoto, Keiji; Kominami, Hiroshi

    2016-03-18

    Gold particles supported on tin(IV) oxide (0.2 wt% Au/SnO2) were modified with copper and silver by the multistep photodeposition method. Absorption around λ=550 nm, attributed to surface plasmon resonance (SPR) of Au, gradually shifted to longer wavelengths on modification with Cu and finally reached λ=620 nm at 0.8 wt% Cu. On the other hand, the absorption shifted to shorter wavelength with increasing amount of Ag and reached λ=450 nm at 0.8 wt% Ag. These Cu- and Ag-modified 0.2 wt% Au/SnO2 materials (Cu-Au/SnO2 and Ag-Au/SnO2) and 1.0 wt% Au/SnO2 were used for mineralization of formic acid to carbon dioxide in aqueous suspension under irradiation with visible light from a xenon lamp and three kinds of light-emitting diodes with different wavelengths. The reaction rates for the mineralization of formic acid over these materials depend on the wavelength of light. Apparent quantum efficiencies of Cu-Au/SnO2, Au/SnO2, and Ag-Au/SnO2 reached 5.5% at 625 nm, 5.8% at 525 nm, and 5.1% at 450 nm, respectively. These photocatalysts can also be used for selective oxidation of alcohols to corresponding carbonyl compounds in aqueous solution under visible-light irradiation. Broad responses to visible light in formic acid mineralization and selective alcohol oxidation were achieved when the three materials were used simultaneously.

  15. Effects of Sn, Ga, and In additives on properties of Ag-Pd-Au-Cu alloy for ultra-low fusing ceramics.

    PubMed

    Shimizu, T; Goto, S; Ogura, H

    2001-12-01

    Nine 35% Ag-30% Pd-20% Au-15% Cu alloys containing 2, 4 and 6 mass% of Sn, Ga or In as an additive metal were experimentally prepared to investigate the effects of different additives and their content on the physical and mechanical properties as well as the bond with a ultra-low fusing ceramic. Both the different additives and their content or either of these two factors significantly influenced most of the evaluated properties except for the area fraction of the retained ceramic. Based on the evaluated properties three experimental alloys (2% Sn-added alloy, 4% Ga-added alloy and 2% In-added alloy) can be recommended as a suitable alloy for ceramic-metal restorations using ultra-low fusing ceramics.

  16. Impact of Cooling Rate-Induced Recrystallization on High G Mechanical Shock and Thermal Cycling in Sn-Ag-Cu Solder Interconnects

    NASA Astrophysics Data System (ADS)

    Lee, Tae-Kyu; Bieler, Thomas R.; Kim, Choong-Un

    2016-01-01

    The mechanical stability and thermo-mechanical fatigue performance of solder joints with low silver content Sn-1.0Ag-0.5Cu (wt.%) (SAC105) alloy based on different cooling rates are investigated in high G level shock environment and thermal cycling conditions. The cooling rate-controlled samples ranging from 1°C/min to 75°C/min cooling rate, not only show differences in microstructure, where a fine poly-granular microstructure develops in the case of fast cooling versus normal cooling, but also show various shock performances based on the microstructure changes. The fast cooling rate improves the high G shock performance by over 90% compared to the normal cooled SAC105 alloy air-cooling environment commonly used after assembly reflow. The microstructure effect on thermal cycling performance is also discussed, which is analyzed based on the Sn grain orientation, interconnect stability, and solder joint bulk microstructure.

  17. Effect of Zn addition, strain rate and deformation temperature on the tensile properties of Sn-3.3 wt.% Ag solder alloy

    SciTech Connect

    Fawzy, A. . E-mail: afawzy1955@yahoo.com

    2007-04-15

    Stress-strain characteristics of the binary Sn-3.3 wt.% Ag and the tertiary Sn-3.3 wt.% Ag-1 wt.% Zn solder alloys were investigated at various strain rates (SR, {epsilon} {sup .}) from 2.6 x 10{sup -4} to 1.0 x 10{sup -2} s{sup -1} and deformation temperatures from 300 to 373 K. Addition of 1 wt.% Zn to the binary alloy increased the yield stress {sigma} {sub y} and the ultimate tensile stress {sigma} {sub UTS} while a decrease of ductility (total elongation {epsilon} {sub T}) was observed. Increasing the strain rate ({epsilon} {sup .}) increased both {sigma} {sub y} and {sigma} {sub UTS} according to the power law {sigma} = C {epsilon} {sup .m}. A normal decrease of {epsilon} {sub T} with strain rate was observed according to an empirical equation of the form {epsilon} {sub T} = A exp (- {lambda}{epsilon} {sup .}); A and {lambda} are constants. Increasing the deformation temperature decreased both {sigma} {sub y} and {sigma} {sub UTS} in both alloys, and decreased the total elongation {epsilon} {sub T} in the Zn-free binary alloy, whereas {epsilon} {sub T} was increased in the Zn-containing alloy. The activation energy was determined as 41 and 20 kJ mol{sup -1} for these alloys, respectively. The results obtained were interpreted in terms of the variation of the internal microstructure in both alloys. The internal microstructural variations in the present study were evaluated by optical microscopy, electron microscopy and X-ray diffraction. The results show the importance of Zn addition in enhancing the mechanical strength of the Sn-3.3 wt.% Ag base alloy.

  18. Microstructural characterization and mechanical property of active soldering anodized 6061 Al alloy using Sn-3.5Ag-xTi active solders

    SciTech Connect

    Wang, Wei-Lin Tsai, Yi-Chia

    2012-06-15

    Active solders Sn-3.5Ag-xTi varied from x = 0 to 6 wt.% Ti addition were prepared by vacuum arc re-melting and the resultant phase formation and variation of microstructure with titanium concentration were analyzed using X-ray diffraction, optical microscopy and scanning electron microscopy. The Sn-3.5Ag-xTi active solders are used as metallic filler to join with anodized 6061 Al alloy for potential applications of providing a higher heat conduction path. Their joints and mechanical properties were characterized and evaluated in terms of titanium content. The mechanical property of joints was measured by shear testing. The joint strength was very dependent on the titanium content. Solder with a 0.5 wt.% Ti addition can successfully wet and bond to the anodized aluminum oxide layers of Al alloy and posses a shear strength of 16.28 {+-} 0.64 MPa. The maximum bonding strength reached 22.24 {+-} 0.70 MPa at a 3 wt.% Ti addition. Interfacial reaction phase and chemical composition were identified by a transmission electron microscope with energy dispersive spectrometer. Results showed that the Ti element reacts with anodized aluminum oxide to form Al{sub 3}Ti-rich and Al{sub 3}Ti phases at the joint interfaces. - Highlights: Black-Right-Pointing-Pointer Active solder joining of anodized Al alloy needs 0.5 wt.% Ti addition for Sn-3.5Ag. Black-Right-Pointing-Pointer The maximum bonding strength occurs at 3 wt.% Ti addition. Black-Right-Pointing-Pointer The Ti reacts with anodized Al oxide to form Al{sub 3}Ti-rich and Al{sub 3}Ti at joint interface.

  19. Thermal cycling reliability of Cu/SnAg double-bump flip chip assemblies for 100 μm pitch applications

    NASA Astrophysics Data System (ADS)

    Son, Ho-Young; Kim, Ilho; Lee, Soon-Bok; Jung, Gi-Jo; Park, Byung-Jin; Paik, Kyung-Wook

    2009-01-01

    A thick Cu column based double-bump flip chip structure is one of the promising alternatives for fine pitch flip chip applications. In this study, the thermal cycling (T/C) reliability of Cu/SnAg double-bump flip chip assemblies was investigated, and the failure mechanism was analyzed through the correlation of T/C test and the finite element analysis (FEA) results. After 1000 thermal cycles, T/C failures occurred at some Cu/SnAg bumps located at the edge and corner of chips. Scanning acoustic microscope analysis and scanning electron microscope observations indicated that the failure site was the Cu column/Si chip interface. It was identified by a FEA where the maximum stress concentration was located during T/C. During T/C, the Al pad between the Si chip and a Cu column bump was displaced due to thermomechanical stress. Based on the low cycle fatigue model, the accumulation of equivalent plastic strain resulted in thermal fatigue deformation of the Cu column bumps and ultimately reduced the thermal cycling lifetime. The maximum equivalent plastic strains of some bumps at the chip edge increased with an increased number of thermal cycles. However, equivalent plastic strains of the inner bumps did not increase regardless of the number of thermal cycles. In addition, the z-directional normal plastic strain ɛ22 was determined to be compressive and was a dominant component causing the plastic deformation of Cu/SnAg double bumps. As the number of thermal cycles increased, normal plastic strains in the perpendicular direction to the Si chip and shear strains were accumulated on the Cu column bumps at the chip edge at low temperature region. Thus it was found that the Al pad at the Si chip/Cu column interface underwent thermal fatigue deformation by compressive normal strain and the contact loss by displacement failure of the Al pad, the main T/C failure mode of the Cu/SnAg flip chip assembly, then occurred at the Si chip/Cu column interface shear strain deformation

  20. Effect of Reflow Time on Wetting Behavior, Microstructure Evolution, and Joint Strength of Sn-2.5Ag-0.5Cu Solder on Bare and Nickel-Coated Copper Substrates

    NASA Astrophysics Data System (ADS)

    Sona, Mrunali; Prabhu, K. Narayan

    2016-07-01

    The effect of reflow time on wetting behavior of Sn-2.5Ag-0.5Cu lead-free solder on bare and nickel-coated copper substrates has been investigated. The solder alloy was reflowed at 270°C for various reflow times of 10 s, 100 s, 300 s, and 500 s. On bare copper substrate, the intermetallic compound (IMC) thickness increased with increase in reflow time, whereas on Ni-coated Cu substrate, the IMC thickness increased up to 300 s followed by a drop for solder alloy reflowed for 500 s. The spreading behavior of the solder alloy was categorized into capillary, gravity (diffusion), and viscous zones. Gravity zone was obtained from 3.8 ± 0.43 s to 38.97 ± 3.38 s and from 5.99 ± 0.5 s to 77.82 ± 8.84 s for the Sn-2.5Ag-0.5Cu/Cu and Sn-2.5Ag-0.5Cu/Ni/Cu system, respectively. Sn-2.5Ag-0.5Cu solder alloy was also reflowed for the period corresponding to the end of the gravity zone (40 s and 80 s on bare and Ni-coated Cu, respectively). The joint strength was maximum at reflow time of 40 s and 80 s for the Sn-2.5Ag-0.5Cu/Cu and Sn-2.5Ag-0.5Cu/Ni/Cu system, respectively. The dynamic contact angle at the end of the gravity (diffusion) zone ( θ gz) was found to be a better parameter compared with the stabilized contact angle ( θ f) to assess the effect of the wettability of the liquid solder on the microstructure and joint strength. The present investigation reveals the significance of the gravity zone in assessment of optimum reflow time for lead-free solder alloys.

  1. Effects of prestrain, rate of prestrain, and temperature on the stress-relaxation behavior of eutectic Sn-3.5Ag solder joints

    NASA Astrophysics Data System (ADS)

    Rhee, H.; Subramanian, K. N.

    2003-11-01

    Stress-relaxation studies on eutectic Sn-Ag solder (Sn-3.5Ag in wt.%) joints were carried out at various temperatures after imposing different amounts and rates of simple shear strain. Stress-relaxation parameters were evaluated by subjecting geometrically realistic solder joints with a nominal joint thickness of ˜100 µm and a 1 mm × 1 mm solder-joint area. The peak shear stress during preloading and residual shear stress resulting from stress relaxation were higher at the low-temperature extremes than those at high-temperature extremes. Also, those values increased with increasing simple shear strain and the rate of simple shear strain imposed prior to the stress-relaxation events. The relaxation stress is insensitive to simple shear strain at 150°C, but at lower temperatures, a faster rate of simple shear strain causes a higher relaxed-stress value. The resulting deformation structures observed from the solder-joint side surfaces were also strongly affected by these parameters. At high temperature, grain-boundary sliding effects were commonly observed. At low temperature, intense shear bands dominated, and no grain-boundary sliding effects were observed.

  2. Effects of Zn-Containing Flux on Sn-3.5Ag Soldering with an Electroless Ni-P/Au Surface Finish: Microstructure and Wettability

    NASA Astrophysics Data System (ADS)

    Sakurai, Hitoshi; Baated, Alongheng; Lee, Kiju; Kim, Seongjun; Kim, Keun-Soo; Kukimoto, Youichi; Kumamoto, Seishi; Suganuma, Katsuaki

    2010-12-01

    The microstructure resulting from Sn-3.5Ag soldering on an electroless Ni-P/Au pad using flux containing Zn(II) stearate was investigated. The content of zinc compound in the flux was 0 wt.% (Z-0), 20 wt.% (Z-20) or 50 wt.% (Z-50). A study of the interfacial microstructure revealed that both Z-20 and Z-50 fluxes yielded a thinner P-rich layer at the interface than did the Z-0 flux. In addition, compared with the bulky Ni-Sn intermetallics of the Z-0 joint interface, refined interfacial intermetallic compounds (IMCs) were observed when using Zn-containing fluxes, Z-20 and Z-50. Based on qualitative analyses of both Z-20 and Z-50 joint interfaces, it was presumed that their intermetallic layers would consist of Ni, Zn, and Sn. Additionally, the Ni content in the IMC layer of the Z-50 joint was lower than that of the Z-20 joint. Electron probe microanalysis (EPMA) of the initial Z-50 joint interface revealed Zn in the interfacial reaction layer, suggesting that Zn participated in the reaction between solder and the surface finish at an early stage of soldering. Consequently, the supply of Zn from the flux diminished Ni diffusion into the molten solder during heating. This effect may have caused a thin P-rich layer to form at the joint interface.

  3. Viscosity and Electrical Conductivity of the Liquid Sn-3.8Ag-0.7Cu Alloy with Minor Co Admixtures

    NASA Astrophysics Data System (ADS)

    Yakymovych, A.; Sklyarchuk, V.; Plevachuk, Yu.; Sokoliuk, B.

    2016-10-01

    The viscosity and electrical conductivity as structure-sensitive transport properties of the liquid metals and alloys are important for modeling of the melting and solidification processes. The viscosity and electrical conductivity data provide additional information about the influence of impurities on the structure and physicochemical properties of the liquid metal matrix, which is useful for understanding of structural transformations in the liquid state. In the present work, an impact of minor Co admixtures on the viscosity and electrical conductivity of liquid Sn-3.8Ag-0.7Cu alloy was studied. An increase in viscosity with minor Co admixtures is in a satisfactory agreement with model predicted data obtained from thermodynamic approaches and suggests a significant impact of interatomic interactions. Cobalt admixtures significantly affect the electrical conductivity, which gradually decreases with increasing the amount of Co. Additionally, the sample microstructure has been examined using x-ray diffraction and scanning electron microscopy analyses. The formation of Sn-based Co-Sn intermetallic compounds was detected in the alloys with more than 1 wt.% Co.

  4. RbCu 1.2Ag 3.8Se 3 and Cs 2Cu 2Sb 2Se 5: Novel Quaternary Intermetallics Synthesized from Superheated Organic Media

    NASA Astrophysics Data System (ADS)

    Chen, Zhen; Wang, Ru-Ji; Dilks, Kieran J.; Li, Jing

    1999-10-01

    Reactions in superheated ethylenediamine (en) solutions at 160°C resulted in two novel quaternary intermetallic copper selenides, RbCu1.2Ag3.8Se3(I) and Cs2Cu2Sb2Se5(II). Both I and II are metal rich and represent new layered structure types. Compound I crystallizes in the tetragonal crystal system, space group P4/nbm (No. 125) with a=5.991(1) Å, c=10.918(2) Å, Z=2, V=391.9(1) Å3, R1/wR2=0.0373/0.0458 for all reflections. Compound II belongs to the triclinic crystal system, space group Poverline1 (No. 2), a=7.645(1) Å, b=8.768(2) Å, c=10.264(1) Å, α=91.97(2)°, β=92.07(2)°, γ=103.05(1)°, Z=2, V=669.2(3) Å3, R1/wR2=0.0685/0.0740 for all reflections. I consists of 2∞[(Cu1.2Ag3.8Se3)-] layers and Rb+ counterions located between these layers. There are two types of metal-to-selenium coordination, a square planar (Ag) and a trigonal pyramidal (Cu/Ag). The Se(1) atom displays an unusual eight coordination with Ag and Cu. II contains alternating 2∞[(Cu2Sb2Se5)2-] anionic and Cs+ cationic layers. Each copper atom has a distorted tetrahedral coordination to four Se atoms, and each antimony atom bonds to three Se atoms to result in a trigonal pyramidal geometry. Both I and II are semiconductors with estimated band gaps of 0.7-0.8 and 1.2-1.3 eV, respectively.

  5. Intermetallic compounds of the heaviest elements and their homologs: The electronic structure and bonding of MM', where M =Ge, Sn, Pb, and element 114, and M'=Ni, Pd, Pt, Cu, Ag, Au, Sn, Pb, and element 114

    NASA Astrophysics Data System (ADS)

    Pershina, V.; Anton, J.; Fricke, B.

    2007-10-01

    Fully relativistic (four-component) density-functional theory calculations were performed for intermetallic dimers MM', where M =Ge, Sn, Pb, and element 114, and M'=group 10 elements (Ni, Pd, and Pt) and group 11 elements (Cu, Ag, and Au). PbM and 114M, where M are group 14 elements, were also considered. The results have shown that trends in spectroscopic properties—atomization energies De, vibrational frequencies ωe, and bond lengths Re, as a function of M', are similar for compounds of Ge, Sn, Pb, and element 114, except for De of PbNi and 114Ni. They were shown to be determined by trends in the energies and space distribution of the valence ns(M ') atomic orbitals (AOs). According to the results, element 114 should form the weakest bonding with Ni and Ag, while the strongest with Pt due to the largest involvement of the 5d(Pt) AOs. In turn, trends in the spectroscopic properties of MM' as a function of M were shown to be determined by the behavior of the np1/2(M ) AOs. Overall, De of the element 114 dimers are about 1eV smaller and Re are about 0.2a.u. larger than those of the corresponding Pb compounds. Such a decrease in bonding of the element 114 dimers is caused by the large SO splitting of the 7p orbitals and a decreasing contribution of the relativistically stabilized 7p1/2(114) AO. On the basis of the calculated De for the dimers, adsorption enthalpies of element 114 on the corresponding metal surfaces were estimated: They were shown to be about 100-150kJ/mol smaller than those of Pb.

  6. Designed synthesis of MOx (M = Zn, Fe, Sn, Ni, Mn, Co, Ce, Mg, Ag), Pt, and Au nanoparticles supported on hierarchical CuO hollow structures.

    PubMed

    Zhang, Zailei; Jung, Ji Chul; Yan, Ning

    2016-12-01

    Despite intensive research into support substrates for the dispersal of nanoparticles and their applications, there has been a lack of general methods to produce metal oxide hollow substrates supporting a wide range of metal and metal oxides. Herein, a synthetic protocol for the preparation of CuO hollow structure-supported MOx (M = Zn, Fe, Ni, Sn, Mn, Co, Ce, Mg, and Ag) and noble metals (Pt and Au) with the desired properties and shell structure, such as CuO/Fe2O3, CuO/ZnO, CuO/SnO2, CuO/MgO, CuO/NiO, CuO/Mn2O3, CuO/CoO, CuO/CeO2, CuO/Ag2O, CuO/Pt, CuO/Au hollow cubes, CuO/ZnO double-shell hollow cubes, CuO/SnO2 double-shell hollow octahedra, CuO/SnO2/Fe2O3 and CuO/Mn2O3/NiO double-shell hollow cubes, was developed based on controlled calcination and etching. These hybrid hollow structures were employed not only as support substrates but also as active constituents for catalytic reactions. As an example, we demonstrated that CuO/ZnO hollow cubes are remarkably efficient in converting solid chitin biomass to liquid chemicals in methanol. In addition, CuO/ZnO double-shell hollow cubes were highly effective in the oxidation of benzyl alcohol in the presence of H2O2, whereas CuO/Pt and CuO/Au hollow cubes promoted the oxidation of benzyl alcohol in pure O2. The strategy developed in this work extends the controllable fabrication of high-quality CuO hollow structure-supported nanoparticles using various compositions and shell structures, paving the way to the exploration and systematic comparison of these materials in a wider range of applications.

  7. Sn-doped Bi1.1Sb0.9Te2S bulk crystal topological insulator with excellent properties

    SciTech Connect

    S. K. Kushwaha; Pletikosic, I.; Liang, T.; Gyenis, A.; Lapidus, S. H.; Tian, Y.; Zhao, H.; Burch, K. S.; Lin, Jingjing; Wang, Wudi; Ji, H.; Fedorov, A. V.; Yazdani, A.; Ong, N. P.; Valla, T.; Cava, R. J.

    2016-04-27

    A long-standing issue in topological insulator research has been to find a bulk single crystal material that provides a high quality platform for characterizing topological surface states without interference from bulk electronic states. This material would ideally be a bulk insulator, have a surface state Dirac point energy well isolated from the bulk valence and conduction bands, display quantum oscillations from the surface state electrons, and be growable as large, high quality bulk single crystals. Here we show that this materials obstacle is overcome by bulk crystals of lightly Sn-doped Bi1.1Sb0.9Te2S grown by the Vertical Bridgeman method. We characterize Sn-BSTS via angle-resolved photoemission spectroscopy, scanning tunneling microscopy, transport studies, X-ray diffraction, and Raman scattering. We present this material as a high quality topological insulator that can be reliably grown as bulk single crystals and thus studied by many researchers interested in topological surface states.

  8. Peculiarities of thermoelectric half-Heusler phase formation in Gd-Ni-Sb and Lu-Ni-Sb ternary systems

    NASA Astrophysics Data System (ADS)

    Romaka, V. V.; Romaka, L.; Horyn, A.; Rogl, P.; Stadnyk, Yu; Melnychenko, N.; Orlovskyy, M.; Krayovskyy, V.

    2016-07-01

    The phase equilibria in the Gd-Ni-Sb and Lu-Ni-Sb ternary systems were studied at 873 K by X-ray and metallographic analyses in the whole concentration range. The interaction of the elements in the Gd-Ni-Sb system results the formation of five ternary compounds at investigated temperature: Gd5Ni2Sb (Mo5SiB2-type), Gd5NiSb2 (Yb5Sb3-type), GdNiSb (MgAgAs-type), Gd3Ni6Sb5 (Y3Ni6Sb5-type), and GdNi0.72Sb2 (HfCuSi2-type). At investigated temperature the Lu-Ni-Sb system is characterized by formation of the LuNiSb (MgAgAs-type), Lu5Ni2Sb (Mo5SiB2-type), and Lu5Ni0.56Sb2.44 (Yb5Sb3-type) compounds. The disordering in the crystal structure of half-Heusler GdNiSb and LuNiSb was revealed by EPMA and studied by means of Rietveld refinement and DFT modeling. The performed electronic structure calculations are in good agreement with electrical transport property studies.

  9. Influence of Cyclic Strain-Hardening Exponent on Fatigue Ductility Exponent for a Sn-Ag-Cu Micro-Solder Joint

    NASA Astrophysics Data System (ADS)

    Kanda, Yoshihiko; Kariya, Yoshiharu; Oto, Yuji

    2012-03-01

    The fatigue ductility exponent in the Coffin-Manson law for a Sn-Ag-Cu micro-solder joint was investigated in terms of the cyclic strain-hardening property and the inelastic strain energy in fracture for isothermal fatigue. The fatigue ductility exponent was found to increase with temperature and holding time under strain at high temperature. This exponent is closely related to the cyclic strain-hardening exponent, which displays the opposite behavior in that it decreases with increasing temperature and with coarsening of intermetallic compound particles while holding under strain at high temperature. This result differs from the creep damage mechanism (grain boundary fracture), which is a primary reason for the significant reduction in fatigue life for all strain ranges for large-size specimens.

  10. Influence of nanoparticle addition on the formation and growth of intermetallic compounds (IMCs) in Cu/Sn-Ag-Cu/Cu solder joint during different thermal conditions.

    PubMed

    Ting Tan, Ai; Wen Tan, Ai; Yusof, Farazila

    2015-06-01

    Nanocomposite lead-free solders are gaining prominence as replacements for conventional lead-free solders such as Sn-Ag-Cu solder in the electronic packaging industry. They are fabricated by adding nanoparticles such as metallic and ceramic particles into conventional lead-free solder. It is reported that the addition of such nanoparticles could strengthen the solder matrix, refine the intermetallic compounds (IMCs) formed and suppress the growth of IMCs when the joint is subjected to different thermal conditions such as thermal aging and thermal cycling. In this paper, we first review the fundamental studies on the formation and growth of IMCs in lead-free solder joints. Subsequently, we discuss the effect of the addition of nanoparticles on IMC formation and their growth under several thermal conditions. Finally, an outlook on the future growth of research in the fabrication of nanocomposite solder is provided.

  11. Enthalpy Effect of Adding Cobalt to Liquid Sn-3.8Ag-0.7Cu Lead-Free Solder Alloy: Difference between Bulk and Nanosized Cobalt

    PubMed Central

    2016-01-01

    Heat effects for the addition of Co in bulk and nanosized forms into the liquid Sn-3.8Ag-0.7Cu alloy were studied using drop calorimetry at four temperatures between 673 and 1173 K. Significant differences in the heat effects between nano and bulk Co additions were observed. The considerably more exothermic values of the measured enthalpy for nano Co additions are connected with the loss of the surface enthalpy of the nanoparticles due to the elimination of the surface of the nanoparticles upon their dissolution in the liquid alloy. This effect is shown to be independent of the calorimeter temperature (it depends only on the dropping temperature through the temperature dependence of the surface energy of the nanoparticles). Integral and partial enthalpies of mixing for Co in the liquid SAC-alloy were evaluated from the experimental data. PMID:26877829

  12. Enthalpy Effect of Adding Cobalt to Liquid Sn-3.8Ag-0.7Cu Lead-Free Solder Alloy: Difference between Bulk and Nanosized Cobalt.

    PubMed

    Yakymovych, Andriy; Kaptay, George; Roshanghias, Ali; Flandorfer, Hans; Ipser, Herbert

    2016-01-28

    Heat effects for the addition of Co in bulk and nanosized forms into the liquid Sn-3.8Ag-0.7Cu alloy were studied using drop calorimetry at four temperatures between 673 and 1173 K. Significant differences in the heat effects between nano and bulk Co additions were observed. The considerably more exothermic values of the measured enthalpy for nano Co additions are connected with the loss of the surface enthalpy of the nanoparticles due to the elimination of the surface of the nanoparticles upon their dissolution in the liquid alloy. This effect is shown to be independent of the calorimeter temperature (it depends only on the dropping temperature through the temperature dependence of the surface energy of the nanoparticles). Integral and partial enthalpies of mixing for Co in the liquid SAC-alloy were evaluated from the experimental data.

  13. Influence of Cu Nanoparticles on Microstructure and Mechanical Properties of Sn0.7Ag0.5Cu-BiNi/Cu Solder Joint

    NASA Astrophysics Data System (ADS)

    Ban, G. F.; Sun, F. L.; Fan, J. J.; Liu, Y.; Cong, S. N.

    2017-02-01

    The influence of Cu nanoparticles addition on microstructure and mechanical properties of Sn0.7Ag0.5Cu-BiNi/Cu solder joint after reflow and isothermal aging has been investigated in this study. Experimental results indicate that the addition of Cu nanoparticles suppresses the growth of intermetallic compound (IMC) layer at the interface after reflow and aging. Moreover, the bulk solder appears with refined microstructure after adding Cu nanoparticles. In addition, solder joints containing Cu nanoparticles display higher microhardness due to the dispersive distribution of Cu nanoparticles as well as the refined IMC particles. The addition of 0.1% Cu nanoparticles can improve the microhardness by 16% compared with the noncomposite. However, the existing porosity in the solder exerts a negative effect on microhardness and shear strength. The mechanism of porosity formation has been discussed in detail. Porosity increases markedly with increasing Cu nanoparticles proportion.

  14. Frequency-Dependent Low Cycle Fatigue of Sn1Ag0.1Cu(In/Ni) Solder Joints Subjected to High-Frequency Loading

    NASA Astrophysics Data System (ADS)

    Wong, E. H.; Seah, S. K. W.; Shim, V. P. W.

    2014-02-01

    The low-cycle-fatigue characteristics of solder joints, formed by reflowing Sn98.8/Ag1.0/Cu0.1/In0.05/Ni0.02 solder over electroless nickel immersion gold-plated copper pads, were investigated by dynamic cyclic bending of printed circuit boards (PCBs). The PCB strain amplitudes were varied from 1.2 × 10-3 to 2.4 × 10-3 and the flexural frequencies ranged from 30 Hz to 150 Hz, to simulate drop impact-induced PCB resonant frequencies. A trend of drastically decreasing fatigue life with cyclic frequency was observed, in contrast with previous reports indicating the reverse; this is attributed to the different failure mechanisms activated. A systematic procedure involving optimization followed by transformation was used to condense the strain-frequency-life data into a master curve expressed in strain-life space.

  15. Finite Element-Assisted Assessment of the Thermo-cyclic Characteristics of Leads Soldered with SnAgCu(+Bi,In) Alloys

    NASA Astrophysics Data System (ADS)

    Lis, Adrian; Nakanishi, Kohei; Matsuda, Tomoki; Sano, Tomokazu; Minagawa, Madoka; Okamoto, Masahide; Hirose, Akio

    2017-03-01

    Solder joints between leads and printed circuit boards in thin small outline packages were produced with conventional Sn1.0Ag0.7Cu (SAC107) and Sn3.0Ag0.7Cu (SAC305) solders as well as various solder alloys with gradually increasing amounts of Bi (up to 3.0 wt.%) and In (up to 1.0 wt.%) within the SAC107 base solder. The reliability of soldered leads in temperature cycle (TC) tests improved most with solder alloys containing both Bi (1.6 wt.%) and In (0.5 wt.%). Microindentation and electron probe microanalysis mappings revealed that the effect originates from a combination of solution and precipitation strengthening of the initial SAC alloy. The distribution of inelastic strain accumulation (ISA), as a measure for degradation, was determined in the solder joints by finite element calculations. It was shown that defects in the solder proximal to the lead (<60-75 μm) strongly impact the reliability and provoke crack initiation around the defect where the highest ISA is located. In particular, similar TC performance can be expected for defect-free joints and for those whose defects exceed the threshold distance from the lead (>60-75 μm), which was underpinned by similar cracking characteristics along the lead-solder interface. The ISA was confirmed to be lower in SAC+Bi/In alloys owing to their enhanced elasto-plastic properties. Moreover, the addition of a thin Cu coating on the leads could improve the joint reliability, as suggested by the calculation of the ISA and the acceleration factor.

  16. Morphology and Shear Strength of Lead-Free Solder Joints with Sn3.0Ag0.5Cu Solder Paste Reinforced with Ceramic Nanoparticles

    NASA Astrophysics Data System (ADS)

    Yakymovych, A.; Plevachuk, Yu.; Švec, P.; Švec, P.; Janičkovič, D.; Šebo, P.; Beronská, N.; Roshanghias, A.; Ipser, H.

    2016-12-01

    To date, additions of different oxide nanoparticles is one of the most widespread procedures to improve the mechanical properties of metals and metal alloys. This research deals with the effect of minor ceramic nanoparticle additions (SiO2, TiO2 and ZrO2) on the microstructure and mechanical properties of Cu/solder/Cu joints. The reinforced Sn3.0Ag0.5Cu (SAC305) solder alloy with 0.5 wt.% and 1.0 wt.% of ceramic nanoparticles was prepared through mechanically stirring. The microstructure of as-solidified Cu/solder/Cu joints was studied using scanning electron microscopy. The additions of ceramic nanoparticles suppressed the growth of the intermetallic compound layer Cu6Sn5 at the interface solder/Cu and improved the microstructure of the joints. Furthermore, measurements of mechanical properties showed improved shear strength of Cu/composite solder/Cu joints compared to joints with unreinforced solder. This fact related to all investigated ceramic nanoinclusions and should be attributed to the adsorption of nanoparticles on the grain surface during solidification. However, this effect is less pronounced on increasing the nanoinclusion content from 0.5 wt.% to 1.0 wt.% due to agglomeration of nanoparticles. Moreover, a comparison analysis showed that the most beneficial influence was obtained by minor additions of SiO2 nanoparticles into the SAC305 solder alloy.

  17. The Failure Models of Lead Free Sn-3.0Ag-0.5Cu Solder Joint Reliability Under Low-G and High-G Drop Impact

    NASA Astrophysics Data System (ADS)

    Gu, Jian; Lei, YongPing; Lin, Jian; Fu, HanGuang; Wu, Zhongwei

    2017-02-01

    The reliability of Sn-3.0Ag-0.5Cu (SAC 305) solder joint under a broad level of drop impacts was studied. The failure performance of solder joint, failure probability and failure position were analyzed under two shock test conditions, i.e., 1000 g for 1 ms and 300 g for 2 ms. The stress distribution on the solder joint was calculated by ABAQUS. The results revealed that the dominant reason was the tension due to the difference in stiffness between the print circuit board and ball grid array, and the maximum tension of 121.1 MPa and 31.1 MPa, respectively, under both 1000 g or 300 g drop impact, was focused on the corner of the solder joint which was located in the outmost corner of the solder ball row. The failure modes were summarized into the following four modes: initiation and propagation through the (1) intermetallic compound layer, (2) Ni layer, (3) Cu pad, or (4) Sn-matrix. The outmost corner of the solder ball row had a high failure probability under both 1000 g and 300 g drop impact. The number of failures of solder ball under the 300 g drop impact was higher than that under the 1000 g drop impact. The characteristic drop values for failure were 41 and 15,199, respectively, following the statistics.

  18. Electronic properties of GeTe and Ag- or Sb-substituted GeTe studied by low-temperature Te125 NMR

    SciTech Connect

    Cui, J.; Levin, E. M.; Lee, Y.; Furukawa, Y.

    2016-08-18

    We have carried out 125Te nuclear magnetic resonance (NMR) in a wide temperature range of 1.5–300 K to investigate the electronic properties of Ge50 Te50, Ag2 Ge48Te50 , and Sb2 Ge48 Te50 from a microscopic point of view. From the temperature dependence of the NMR shift (K) and nuclear spin lattice relaxation rate (1/T1), we found that two bands contribute to the physical properties of the materials. One band overlaps the Fermi level providing the metallic state where no strong electron correlations are revealed by Korringa analysis. The other band is separated from the Fermi level by an energy gap of Eg/kB ~67 K, which gives rise to semiconductorlike properties. First-principles calculation reveals that the metallic band originates from the Ge vacancy while the semiconductorlike band is related to the fine structure of the density of states near the Fermi level. We find low-temperature Te125 NMR data for the materials studied here clearly show that Ag substitution increases hole concentration while Sb substitution decreases it.

  19. Transport and mechanical property evaluation of (AgSbTe){sub 1-x}(GeTe){sub x} (x=0.80, 0.82, 0.85, 0.87, 0.90)

    SciTech Connect

    Salvador, James R.; Yang, J.; Shi, X.; Wang, H.; Wereszczak, A.A.

    2009-08-15

    (AgSbTe{sub 2}){sub 1-x}(GeTe){sub x} (known collectively by the acronym of their constituent elements as TAGS-x, where x designates the mole fraction of GeTe) materials, despite being described over 40 years ago, have only recently been studied in greater detail from a fundamental standpoint. We have prepared a series of samples with composition (AgSbTe{sub 2}){sub 1-x}(GeTe){sub x} (x=0.80, 0.82, 0.85, 0.87 and 0.90). Cast ingots of the above compositions were ground and consolidated by spark plasma sintering (SPS). Sintering conditions, specifically high applied pressures of 65 MPa and slow heating rates, were identified as important variables that lead to samples with low porosity and good mechanical strength. The resulting ingots were cut for high temperature electrical, thermal transport and mechanical property evaluation. TAGS-85 was found to have the highest ZT of all samples investigated (ZT=1.36 at 700 K) as a result of its very low value of thermal conductivity. Hall effect measurements performed from 5 to 300 K found these materials to have complex multi-band transport characteristics. - Graphical Abstract: Powder X-ray diffraction of TAGS-x (x=0.80, 0.82, 0.85, 0.87 and 0.90) showing characteristic bifurcation indicative of rhombohedral structure.

  20. Genetic Pd, Pt, Au, Ag, and Rh mineralogy in Noril'sk sulfide ores

    NASA Astrophysics Data System (ADS)

    Spiridonov, E. M.; Kulagov, E. A.; Serova, A. A.; Kulikova, I. M.; Korotaeva, N. N.; Sereda, E. V.; Tushentsova, I. N.; Belyakov, S. N.; Zhukov, N. N.

    2015-09-01

    The undeformed ore-bearing intrusions of the Noril'sk ore field (NOF) cut through volcanic rocks of the Late Permian-Early Triassic trap association folded in brachysynclines. Due to the nonuniform load on the roof of intrusive bodies, most sulfide melts were squeezed, up to the tops of ore-bearing intrusions; readily fusible Ni-Fe-Cu sulfide melts were almost completely squeezed. In our opinion, not only one but two stages of mineralization developed at the Noril'sk deposits: (i) syntrap magmatic and (ii) epigenetic post-trap metamorphic-hydrothermal. All platinum-group minerals (PGM) and minerals of gold are metasomatic in the Noril'sk ores. They replaced sulfide solid solutions and exsolution structures. All types of PGM and Au minerals occur in the ores, varying in composition from pyrrhotite to chalcopyrite, talnakhite, mooihoekite, and rich in galena; they are localized in the inner and outer contact zones and differ only in the quantitative proportions of ore minerals. The aureoles of PGM and Au-Ag minerals are wider than the contours of sulfide bodies and coincide with halos of fluid impact on orebodies and adjacent host rocks. The pneumatolytic PGM and Au-Ag minerals are correlated in abundance with the dimensions of sulfide bodies. Their amounts are maximal in veins of late fusible ore composed of eutectic PbS ss and iss intergrowths, as well as at their contacts. The Pd and Pt contents in eutectic sulfide ores of NOF are the world's highest. In the process of noble-metal mineral formation, the fluids supply Pd, Pt, Au, As, Sb, Sn, Bi, and a part of Te, whereas Fe, Ni, Cu, Pb, Ag, Rh, a part of Te and Pd are leached from the replaced sulfide minerals. The pneumatolytic PGM of the early stage comprises Pd and Pt intermetallic compounds enriched in Au along with Pd-Pt-Fe-Ni-Cu-Sn-Pb(As) and (Pd,Pt,Au)(Sn,Sb,Bi,Te,As) solid solutions. Pneumatolytic PGM and Au minerals of the middle stage are products of solid-phase transformation and recrystallization of

  1. Optical properties and electronic structures of d- and f-electron metals and alloys, Ag-In, Ni-Cu, AuGa sub 2 , PtGa sub 2 ,. beta. prime -NiAl,. beta. prime -CoAl, CeSn sub 3 , and LaSn sub 3

    SciTech Connect

    Kim, Kwang Joo.

    1990-10-17

    Optical properties and electronic structures of disordered Ag{sub 1- x}In{sub x}(x = 0.0, 0.04, 0.08, 0.12) and Ni{sub 1-x}Cu{sub x} (x = 0.0, 0.1, 0.3, 0.4) alloys and ordered AuGa{sub 2}, PtGa{sub 2}, {beta}{prime}-NiAl, {beta}{prime}-CoAl, CeSn{sub 3}, and LaSn{sub 3} have been studied. The complex dielectric functions have been determined for Ag{sub 1-x}In{sub x}, Ni{sub 1-x}Cu{sub x}, AuGa{sub 2}, and PtGa{sub 2} in the 1.2--5.5 eV region and for CeSn{sub 3} and LaSn{sub 3} in the 1.5--4.5 eV region using spectroscopic ellipsometry. Self-consistent relativistic band calculations using the linearized-augmented-plane-wave method have been performed for AuGa{sub 2}, PtGa{sub 2}, {beta}{prime}-NiAl, {beta}{prime}-CoAl, CeSn{sub 3}, and LaSn{sub 3} to interpret the experimental optical spectra.

  2. Anomalous creep in Sn-rich solder joints

    SciTech Connect

    Song, Ho Geon; Morris Jr., John W.; Hua, Fay

    2002-03-15

    This paper discusses the creep behavior of example Sn-rich solders that have become candidates for use in Pb-free solder joints. The specific solders discussed are Sn-3.5Ag, Sn-3Ag-0.5Cu, Sn-0.7Cu and Sn-10In-3.1Ag, used in thin joints between Cu and Ni-Au metallized pads.

  3. Development of Ag-Pd-Au-Cu alloy for multiple dental applications. Part 1. Effects of Pd and Cu contents, and addition of Ga or Sn on physical properties and bond with ultra-low fusing ceramic.

    PubMed

    Goto, S; Miyagawa, Y; Ogura, H

    2000-09-01

    Ag-Pd-Au-Cu quaternary alloys consisting of 30-50% Ag, 20-40% Pd, 10-20% Cu and 20% Au (mother alloys) were prepared. Then 5% Sn or 5% Ga was added to the mother alloy compositions, and another two alloy systems (Sn-added alloys and Ga-added alloys) were also prepared. The bond between the prepared alloys and an ultra-low fusing ceramic as well as their physical properties such as the solidus point, liquidus point and the coefficient of thermal expansion were evaluated. The solidus point and liquidus point of the prepared alloys ranged from 802 degrees C to 1142 degrees C and from 931 degrees C to 1223 degrees C, respectively. The coefficient of thermal expansion ranged from 14.6 to 17.1 x 10(-6)/degrees C for the Sn- and Ga-added alloys. In most cases, the Pd and Cu contents significantly influenced the solidus point, liquidus point and coefficient of thermal expansion. All Sn- and Ga-added alloys showed high area fractions of retained ceramic (92.1-100%), while the mother alloy showed relatively low area fractions (82.3%) with a high standard deviation (20.5%). Based on the evaluated properties, six Sn-added alloys and four Ga-added alloys among the prepared alloys were suitable for the application of the tested ultra-low fusing ceramic.

  4. Reliability of Sn/Pb and lead-free (SnAgCu) solders of surface mounted miniaturized passive components for extreme temperature (-185°C to +125°C) space missions

    NASA Astrophysics Data System (ADS)

    Ramesham, Rajeshuni

    2011-02-01

    Surface mount electronic package test boards have been assembled using tin/lead (Sn/Pb) and lead-free (Pb-free or SnAgCu or SAC305) solders. The soldered surface mount packages include ball grid arrays (BGA), flat packs, various sizes of passive chip components, etc. They have been optically inspected after assembly and subsequently subjected to extreme temperature thermal cycling to assess their reliability for future deep space, long-term, extreme temperature environmental missions. In this study, the employed temperature range (-185°C to +125°C) covers military specifications (-55°C to +100°C), extreme cold Martian (-120°C to +115°C), asteroid Nereus (-180°C to +25°C) and JUNO (-150°C to +120°C) environments. The boards were inspected at room temperature and at various intervals as a function of extreme temperature thermal cycling and bake duration. Electrical resistance measurements made at room temperature are reported and the tests to date have shown some change in resistance as a function of extreme temperature thermal cycling and some showed increase in resistance. However, the change in interconnect resistance becomes more noticeable with increasing number of thermal cycles. Further research work will be carried out to understand the reliability of packages under extreme temperature applications (-185°C to +125°C) via continuously monitoring the daisy chain resistance for BGA, Flat-packs, lead less chip packages, etc. This paper will describe the experimental reliability results of miniaturized passive components (01005, 0201, 0402, 0603, 0805, and 1206) assembled using surface mounting processes with tin-lead and lead-free solder alloys under extreme temperature environments.

  5. Reliability of Sn/Pb and Lead-Free (SnAgCu) Solders of Surface Mounted Miniaturized Passive Components for Extreme Temperature (-185 C to +125 C) Space Missions

    NASA Technical Reports Server (NTRS)

    Ramesham, Rajeshuni

    2011-01-01

    Surface mount electronic package test boards have been assembled using tin/lead (Sn/Pb) and lead-free (Pb-free or SnAgCu or SAC305) solders. The soldered surface mount packages include ball grid arrays (BGA), flat packs, various sizes of passive chip components, etc. They have been optically inspected after assembly and subsequently subjected to extreme temperature thermal cycling to assess their reliability or future deep space, long-term, extreme temperature environmental missions. In this study, the employed temperature range (-185oC to +125oC) covers military specifications (-55oC to +100oC), extreme old Martian (-120oC to +115oC), asteroid Nereus (-180oC to +25oC) and JUNO (-150oC to +120oC) environments. The boards were inspected at room temperature and at various intervals as a function of extreme temperature thermal cycling and bake duration. Electrical resistance measurements made at room temperature are reported and the tests to date have shown some change in resistance as a function of extreme temperature thermal cycling and some showed increase in resistance. However, the change in interconnect resistance becomes more noticeable with increasing number of thermal cycles. Further research work will be carried out to understand the reliability of packages under extreme temperature applications (-185oC to +125oC) via continuously monitoring the daisy chain resistance for BGA, Flat-packs, lead less chip packages, etc. This paper will describe the experimental reliability results of miniaturized passive components (01005, 0201, 0402, 0603, 0805, and 1206) assembled using surface mounting processes with tin-lead and lead-free solder alloys under extreme temperature environments.

  6. Effects of Rh on the thermoelectric performance of the p-type Zr{sub 0.5}Hf{sub 0.5}Co{sub 1-x}Rh{sub x}Sb{sub 0.99}Sn{sub 0.01} half-Heusler alloys

    SciTech Connect

    Maji, Pramathesh; Takas, Nathan J.; Misra, Dinesh K.; Gabrisch, Heike; Stokes, Kevin; Poudeu, Pierre F.P.

    2010-05-15

    We show that Rh substitution at the Co site in Zr{sub 0.5}Hf{sub 0.5}Co{sub 1-x}Rh{sub x}Sb{sub 0.99}Sn{sub 0.01} (0<=x<=1) half-Heusler alloys strongly reduces the thermal conductivity with a simultaneous, significant improvement of the power factor of the materials. Thermoelectric properties of hot-pressed pellets of several compositions with various Rh concentrations were investigated in the temperature range from 300 to 775 K. The Rh 'free' composition shows n-type conduction, while Rh substitution at the Co site drives the system to p-type semiconducting behavior. The lattice thermal conductivity of Zr{sub 0.5}Hf{sub 0.5}Co{sub 1-x}Rh{sub x}Sb{sub 0.99}Sn{sub 0.01} alloys rapidly decreased with increasing Rh concentration and lattice thermal conductivity as low as 3.7 W/m*K was obtained at 300 K for Zr{sub 0.5}Hf{sub 0.5}RhSb{sub 0.99}Sn{sub 0.01}. The drastic reduction of the lattice thermal conductivity is attributed to mass fluctuation induced by the Rh substitution at the Co site, as well as enhanced phonon scattering at grain boundaries due to the small grain size of the synthesized materials. - Graphical abstract: Significant reduction of the lattice thermal conductivity with increasing Rh concentration in the p-type Zr{sub 0.5}Hf{sub 0.5}Co{sub 1-x}Rh{sub x}Sb{sub 0.99}Sn{sub 0.01} half-Heusler materials prepared by solid state reaction at 1173 K.

  7. Enhancement of thermoelectric figure-of-merit at low temperatures by titanium substitution for hafnium in n-type half-Heuslers Hf0.75-xTixZr0.25NiSn0.99Sb0.01

    SciTech Connect

    Joshi, Giri; Dahal, Tulashi; Chen, Shuo; Wang, Hengzhi Z; Shiomi, Junichiro; Chen, Gang; Ren, Zhifeng F.

    2012-08-08

    The effect of titanium (Ti) substitution for hafnium (Hf) on thermoelectric properties of (Hf, Zr)-based n-type half-Heuslers: Hf0.75-xTixZr0.25NiSn0.99Sb0.01, has been studied. The samples are made by arc melting followed by ball milling and hot pressing via the nanostructuring approach. A peak thermoelectric figure-of-merit (ZT) of ~1.0 is achieved at 500 °C in samples with a composition of Hf0.5Zr0.25Ti0.25NiSn0.99Sb0.01 due to a slight increase in carrier concentration and also a lower thermal conductivity caused by Ti. TheZT values below 500 °C of hot pressed Hf0.5Zr0.25Ti0.25NiSn0.99Sb0.01 samples are significantly higher than those of the same way prepared Hf0.75Zr0.25NiSn0.99Sb0.01samples at each temperature, which are very much desired for mid-range temperature applications such as waste heat recovery in automobiles.

  8. Aging Effects on Microstructure and Creep in Sn-3.8Ag-0.7Cu Solder

    DTIC Science & Technology

    2007-09-01

    good wettability on common substrate such as Cu and Ni used by the Electronic Industry. During the 1980s, surface mount technology (SMT) was used to...2200C), which provide a higher range of operational temperature; comparable wettability with the Pb-Sn solder on copper substrate; and good mechanical...btc a e ctε −= − + 64 where the creep rate at any time for the equation above is going to be having a form of: btd abe c dt ε −= + where a is

  9. Incorporating the Johnson-Cook Constitutive Model and a Soft Computational Approach for Predicting the High-Temperature Flow Behavior of Sn-5Sb Solder Alloy: A Comparative Study for Processing Map Development

    NASA Astrophysics Data System (ADS)

    Vafaeenezhad, H.; Seyedein, S. H.; Aboutalebi, M. R.; Eivani, A. R.

    2017-01-01

    The high-temperature flow behavior of Sn-5Sb lead-free solder alloy has been investigated using isothermal hot compression experiments at 298 K to 400 K and strain rate between 0.0005 s-1 and 0.01 s-1. The flow stress under these test conditions was modeled using constitutive equations based on the Johnson-Cook (J-C) model and an artificial neural network (ANN). Three input factors, i.e., temperature, strain rate, and true strain, were incorporated into the network, and the flow stress was considered as the system output. One hidden layer was adopted in the simulations. Furthermore, a comparative study was carried out on the potential of the two proposed models to characterize the high-temperature flow behavior of this alloy. The capability of the models was assessed by comparing the simulation predictions using a correlation coefficient ( R 2). The stresses predicted by both models presented good agreement with experimental results. In addition, it was found that the ANN model could predict the high-temperature deformation more precisely over the whole temperature and strain rate ranges. However, this is strongly dependent on the availability of extensive, high-quality data and characteristic variables.

  10. Electrochemical degradation of m-cresol using porous carbon-nanotube-containing cathode and Ti/SnO2-Sb2O5-IrO2 anode: kinetics, byproducts and biodegradability.

    PubMed

    Chu, Yanyang; Zhang, Dongmei; Liu, Lei; Qian, Yi; Li, Lingling

    2013-05-15

    The degradation of m-cresol solution was studied using an electrochemical oxidation system with Ti/SnO2-Sb2O5-IrO2 anode for anodic oxidation and porous carbon-nanotube-containing cathode for H2O2 electrogeneration along with Fe(3+) reduction. Organic pollutants were oxidized by hydroxyl radical (OH) formed simultaneously in the medium from electro-Fenton reaction in the presence of Fe(2+) and at the anode surface from water oxidation. The porous cathode made of graphite, carbon nanotube (CNT) and polytetrafluoroethene (PTFE) exhibited a higher catalytic activity toward O2 reduction producing H2O2 and Fe(3+) reduction for Fe(2+) regeneration, favoring organics degradation by electro-Fenton oxidation. The degradation kinetics results revealed that the reaction of m-cresol cleavage with hydroxyl radicals could be described by pseudo first-order kinetics. The progress of organics mineralization demonstrated some byproducts were formed during m-cresol degradation. Based on the byproducts identified by GC-MS and HPLC, the sequential process of m-cresol degradation was proposed. Furthermore, the aerobic biological treatment showed that the electrochemical treatment was able to evidently enhance the biodegradability of m-cresol solution.

  11. Effect of reaction time and P content on mechanical strength of the interface formed between eutectic Sn-Ag solder and Au/electroless Ni(P)/Cu bond pad

    NASA Astrophysics Data System (ADS)

    Alam, M. O.; Chan, Y. C.; Tu, K. N.

    2003-09-01

    In this work, shear strengths of the solder joints for Sn-Ag eutectic alloy with the Au/electroless Ni(P)/Cu bond pad were measured for three different electroless Ni(P) layers. Sn-Ag eutectic solder alloy was kept in molten condition (240 °C) on the Au/electroless Ni(P)/Cu bond pad for different time periods ranging from 0.5 min to 180 min to render the ultimate interfacial reaction and the consecutive shear strength. After the shear test, fracture surfaces were investigated by scanning electron microscopy equipped with energy dispersed x ray. Cross-sectional studies of the interfaces were also conducted to correlate with the fracture surfaces. It was found that formation of crystalline phosphorous-rich Ni layer at the solder interface of Au/electroless Ni(P)/Cu bond pad with Sn-Ag eutectic alloy deteriorates the mechanical strength of the joints significantly. It was also noticed that such weak P-rich Ni layer appears quickly for high-P content electroless Ni(P) layer. However, when this P-rich Ni layer disappears from a prolonged reaction, the shear strength increases again.

  12. A rapid, partial leach and organic separation for the sensitive determination of Ag, Bi, Cd, Cu, Mo, Pb, Sb, and Zn in surface geologic materials by flame atomic absorption

    USGS Publications Warehouse

    Viets, J.G.; Clark, J.R.; Campbell, W.L.

    1984-01-01

    A solution of dilute hydrochloric acid, ascorbic acid, and potassium iodide has been found to dissolve weakly bound metals in soils, stream sediments, and oxidized rocks. Silver, Bi, Cd, Cu, Mo, Pb, Sb, and Zn are selectively extracted from this solution by a mixture of Aliquat 336 (tricaprylyl methyl ammonium chloride) and MIBK (methyl isobutyl ketone). Because potentially interfering major and minor elements do not extract, the organic separation allows interference-free determinations of Ag and Cd to the 0.05 ppm level, Mo, Cu, and Zn to 0.5 ppm, and Bi, Pb, and Sb to 1 ppm in the sample using flame atomic absorption spectroscopy. The analytical absorbance values of the organic solution used in the proposed method are generally enhanced more than threefold as compared to aqueous solutions, due to more efficient atomization and burning characteristics. The leaching and extraction procedures are extremely rapid; as many as 100 samples may be analyzed per day, yielding 800 determinations, and the technique is adaptable to field use. The proposed method was compared to total digestion methods for geochemical reference samples as well as soils and stream sediments from mineralized and unmineralized areas. The partial leach showed better anomaly contrasts than did total digestions. Because the proposed method is very rapid and is sensitive to pathfinder elements for several types of ore deposits, it should be useful for reconnaissance surveys for concealed deposits. ?? 1984.

  13. Effect of ultrasonic vibration time on the Cu/Sn-Ag-Cu/Cu joint soldered by low-power-high-frequency ultrasonic-assisted reflow soldering.

    PubMed

    Tan, Ai Ting; Tan, Ai Wen; Yusof, Farazila

    2017-01-01

    Techniques to improve solder joint reliability have been the recent research focus in the electronic packaging industry. In this study, Cu/SAC305/Cu solder joints were fabricated using a low-power high-frequency ultrasonic-assisted reflow soldering approach where non-ultrasonic-treated samples were served as control sample. The effect of ultrasonic vibration (USV) time (within 6s) on the solder joint properties was characterized systematically. Results showed that the solder matrix microstructure was refined at 1.5s of USV, but coarsen when the USV time reached 3s and above. The solder matrix hardness increased when the solder matrix was refined, but decreased when the solder matrix coarsened. The interfacial intermetallic compound (IMC) layer thickness was found to decrease with increasing USV time, except for the USV-treated sample with 1.5s. This is attributed to the insufficient USV time during the reflow stage and consequently accelerated the Cu dissolution at the joint interface during the post-ultrasonic reflow stage. All the USV-treated samples possessed higher shear strength than the control sample due to the USV-induced-degassing effect. The shear strength of the USV-treated sample with 6s was the lowest among the USV-treated samples due to the formation of plate-like Ag3Sn that may act as the crack initiation site.

  14. Pd-Ag Membrane Coupled to a Two-Zone Fluidized Bed Reactor (TZFBR) for Propane Dehydrogenation on a Pt-Sn/MgAl2O4 Catalyst

    PubMed Central

    Medrano, José-Antonio; Julián, Ignacio; Herguido, Javier; Menéndez, Miguel

    2013-01-01

    Several reactor configurations have been tested for catalytic propane dehydrogenation employing Pt-Sn/MgAl2O4 as a catalyst. Pd-Ag alloy membranes coupled to the multifunctional Two-Zone Fluidized Bed Reactor (TZFBR) provide an improvement in propane conversion by hydrogen removal from the reaction bed through the inorganic membrane in addition to in situ catalyst regeneration. Twofold process intensification is thereby achieved when compared to the use of traditional fluidized bed reactors (FBR), where coke formation and thermodynamic equilibrium represent important process limitations. Experiments were carried out at 500–575 °C and with catalyst mass to molar flow of fed propane ratios between 15.1 and 35.2 g min mmol−1, employing three different reactor configurations: FBR, TZFBR and TZFBR + Membrane (TZFBR + MB). The results in the FBR showed catalyst deactivation, which was faster at high temperatures. In contrast, by employing the TZFBR with the optimum regenerative agent flow (diluted oxygen), the process activity was sustained throughout the time on stream. The TZFBR + MB showed promising results in catalytic propane dehydrogenation, displacing the reaction towards higher propylene production and giving the best results among the different reactor configurations studied. Furthermore, the results obtained in this study were better than those reported on conventional reactors. PMID:24958620

  15. Uptake and translocation of metals and nutrients in tomato grown in soil polluted with metal oxide (CeO₂, Fe₃O₄, SnO₂, TiO₂) or metallic (Ag, Co, Ni) engineered nanoparticles.

    PubMed

    Vittori Antisari, Livia; Carbone, Serena; Gatti, Antonietta; Vianello, Gilmo; Nannipieri, Paolo

    2015-02-01

    The influence of exposure to engineered nanoparticles (NPs) was studied in tomato plants, grown in a soil and peat mixture and irrigated with metal oxides (CeO2, Fe3O4, SnO2, TiO2) and metallic (Ag, Co, Ni) NPs. The morphological parameters of the tomato organs, the amount of component metals taken up by the tomato plants from NPs added to the soil and the nutrient content in different tomato organs were also investigated. The fate, transport and possible toxicity of different NPs and nutrients in tomato tissues from soils were determined by inductively coupled plasma-optical emission spectrometry (ICP-OES). The tomato yield depended on the NPs: Fe3O4-NPs promoted the root growth, while SnO2-NP exposure reduced it (i.e. +152.6 and -63.1 % of dry matter, respectively). The NP component metal mainly accumulated in the tomato roots; however, plants treated with Ag-, Co- and Ni-NPs showed higher concentration of these elements in both above-ground and below-ground organs with respect to the untreated plants, in addition Ag-NPs also contaminated the fruits. Moreover, an imbalance of K translocation was detected in some plants exposed to Ag-, Co- and Fe3O4-NPs. The component metal concentration of soil rhizosphere polluted with NPs significantly increased compared to controls, and NPs were detected in the tissues of the tomato roots using electron microscopy (ESEM-EDS).

  16. Hierarchical ZnO Nanowires-loaded Sb-doped SnO2-ZnO Micrograting Pattern via Direct Imprinting-assisted Hydrothermal Growth and Its Selective Detection of Acetone Molecules.

    PubMed

    Choi, Hak-Jong; Choi, Seon-Jin; Choo, Soyoung; Kim, Il-Doo; Lee, Heon

    2016-01-08

    We propose a novel synthetic route by combining imprinting transfer of a Sb-doped SnO2 (ATO)-ZnO composite micrograting pattern (MP), i.e., microstrip lines, on a sensor substrate and subsequent hydrothermal growth of ZnO nanowires (NWs) for producing a hierarchical ZnO NW-loaded ATO-ZnO MP as an improved chemo-resistive sensing layer. Here, ATO-ZnO MP structure with 3-μm line width, 9-μm pitch, and 6-μm height was fabricated by direct transfer of mixed ATO and ZnO nanoparticle (NP)-dispersed resists, which are pre-patterned on a polydimethylsiloxane (PDMS) mold. ZnO NWs with an average diameter of less than 50 nm and a height of 250 nm were quasi-vertically grown on the ATO-ZnO MP, leading to markedly enhanced surface area and heterojunction composites between each ATO NP, ZnO NP, and ZnO NW. A ZnO NW-loaded MP sensor with a relative ratio of 1:9 between ATO and ZnO (1:9 ATO-ZnO), exhibited highly sensitive and selective acetone sensing performance with 2.84-fold higher response (R air/R gas = 12.8) compared to that (R air/R gas = 4.5) of pristine 1:9 ATO-ZnO MP sensor at 5 ppm. Our results demonstrate the processing advantages of direct imprinting-assisted hydrothermal growth for large-scale homogeneous coating of hierarchical oxide layers, particularly for applications in highly sensitive and selective chemical sensors.

  17. Hierarchical ZnO Nanowires-loaded Sb-doped SnO2-ZnO Micrograting Pattern via Direct Imprinting-assisted Hydrothermal Growth and Its Selective Detection of Acetone Molecules

    PubMed Central

    Choi, Hak-Jong; Choi, Seon-Jin; Choo, Soyoung; Kim, Il-Doo; Lee, Heon

    2016-01-01

    We propose a novel synthetic route by combining imprinting transfer of a Sb-doped SnO2 (ATO)-ZnO composite micrograting pattern (MP), i.e., microstrip lines, on a sensor substrate and subsequent hydrothermal growth of ZnO nanowires (NWs) for producing a hierarchical ZnO NW-loaded ATO-ZnO MP as an improved chemo-resistive sensing layer. Here, ATO-ZnO MP structure with 3-μm line width, 9-μm pitch, and 6-μm height was fabricated by direct transfer of mixed ATO and ZnO nanoparticle (NP)-dispersed resists, which are pre-patterned on a polydimethylsiloxane (PDMS) mold. ZnO NWs with an average diameter of less than 50 nm and a height of 250 nm were quasi-vertically grown on the ATO-ZnO MP, leading to markedly enhanced surface area and heterojunction composites between each ATO NP, ZnO NP, and ZnO NW. A ZnO NW-loaded MP sensor with a relative ratio of 1:9 between ATO and ZnO (1:9 ATO-ZnO), exhibited highly sensitive and selective acetone sensing performance with 2.84-fold higher response (Rair/Rgas = 12.8) compared to that (Rair/Rgas = 4.5) of pristine 1:9 ATO-ZnO MP sensor at 5 ppm. Our results demonstrate the processing advantages of direct imprinting-assisted hydrothermal growth for large-scale homogeneous coating of hierarchical oxide layers, particularly for applications in highly sensitive and selective chemical sensors. PMID:26743814

  18. Hierarchical ZnO Nanowires-loaded Sb-doped SnO2-ZnO Micrograting Pattern via Direct Imprinting-assisted Hydrothermal Growth and Its Selective Detection of Acetone Molecules

    NASA Astrophysics Data System (ADS)

    Choi, Hak-Jong; Choi, Seon-Jin; Choo, Soyoung; Kim, Il-Doo; Lee, Heon

    2016-01-01

    We propose a novel synthetic route by combining imprinting transfer of a Sb-doped SnO2 (ATO)-ZnO composite micrograting pattern (MP), i.e., microstrip lines, on a sensor substrate and subsequent hydrothermal growth of ZnO nanowires (NWs) for producing a hierarchical ZnO NW-loaded ATO-ZnO MP as an improved chemo-resistive sensing layer. Here, ATO-ZnO MP structure with 3-μm line width, 9-μm pitch, and 6-μm height was fabricated by direct transfer of mixed ATO and ZnO nanoparticle (NP)-dispersed resists, which are pre-patterned on a polydimethylsiloxane (PDMS) mold. ZnO NWs with an average diameter of less than 50 nm and a height of 250 nm were quasi-vertically grown on the ATO-ZnO MP, leading to markedly enhanced surface area and heterojunction composites between each ATO NP, ZnO NP, and ZnO NW. A ZnO NW-loaded MP sensor with a relative ratio of 1:9 between ATO and ZnO (1:9 ATO-ZnO), exhibited highly sensitive and selective acetone sensing performance with 2.84-fold higher response (Rair/Rgas = 12.8) compared to that (Rair/Rgas = 4.5) of pristine 1:9 ATO-ZnO MP sensor at 5 ppm. Our results demonstrate the processing advantages of direct imprinting-assisted hydrothermal growth for large-scale homogeneous coating of hierarchical oxide layers, particularly for applications in highly sensitive and selective chemical sensors.

  19. Effects of Microstructure and Loading on Fracture of Sn-3.8Ag-0.7Cu Joints on Cu Substrates with ENIG Surface Finish

    NASA Astrophysics Data System (ADS)

    Huang, Z.; Kumar, P.; Dutta, I.; Sidhu, R.; Renavikar, M.; Mahajan, R.

    2014-12-01

    When dropped, electronic packages often undergo failure by propagation of an interfacial crack in solder joints under a combination of tensile and shear loading. Hence, it is crucial to understand and predict the fracture behavior of solder joints under mixed-mode high-rate loading conditions. In this work, the effects of the loading conditions (strain rate and loading angle) and microstructure [interfacial intermetallic compound (IMC) morphology and solder yield strength] on the mixed-mode fracture toughness of Sn-3.8 wt.%Ag-0.7 wt.%Cu solder joints sandwiched between two Cu substrates with electroless nickel immersion gold (ENIG) metallization have been studied, and compared with the fracture behavior of joints attached to bare Cu. Irrespective of the surface finish, the fracture toughness of the solder joints decreased monotonically with strain rate and mode-mixity, both resulting in increased fracture proportion through the interfacial IMC layer. Furthermore, the proportion of crack propagation through the interfacial IMC layer increased with increase in the thickness and the roughness of the interfacial IMC layer and the yield strength of the solder, resulting in a decrease in the fracture toughness of the joint. However, under most conditions, solder joints with ENIG finish showed higher resistance to fracture than joints attached directly to Cu substrates without ENIG metallization. Based on the experimental observations, a fracture mechanism map is constructed correlating the yield strength of the solder, the morphology and thickness of the interfacial IMC, and the fracture mechanisms as well as the fracture toughness values for different solder joints under mode I loading.

  20. Low-Temperature Bonding of Bi0.5Sb1.5Te3 Thermoelectric Material with Cu Electrodes Using a Thin-Film In Interlayer

    NASA Astrophysics Data System (ADS)

    Lin, Yan-Cheng; Yang, Chung-Lin; Huang, Jing-Yi; Jain, Chao-Chi; Hwang, Jen-Dong; Chu, Hsu-Shen; Chen, Sheng-Chi; Chuang, Tung-Han

    2016-09-01

    A Bi0.5Sb1.5Te3 thermoelectric material electroplated with a Ni barrier layer and a Ag reaction layer was bonded with a Ag-coated Cu electrode at low temperatures of 448 K (175 °C) to 523 K (250 °C) using a 4- μm-thick In interlayer under an external pressure of 3 MPa. During the bonding process, the In thin film reacted with the Ag layer to form a double layer of Ag3In and Ag2In intermetallic compounds. No reaction occurred at the Bi0.5Sb1.5Te3/Ni interface, which resulted in low bonding strengths of about 3.2 MPa. The adhesion of the Bi0.5Sb1.5Te3/Ni interface was improved by precoating a 1- μm Sn film on the surface of the thermoelectric element and preheating it at 523 K (250 °C) for 3 minutes. In this case, the bonding strengths increased to a range of 9.1 to 11.5 MPa after bonding at 473 K (200 °C) for 5 to 60 minutes, and the shear-tested specimens fractured with cleavage characteristics in the interior of the thermoelectric material. The bonding at 448 K (175 °C) led to shear strengths ranging from 7.1 to 8.5 MPa for various bonding times between 5 and 60 minutes, which were further increased to the values of 10.4 to 11.7 MPa by increasing the bonding pressure to 9.8 MPa. The shear strengths of Bi0.5Sb1.5Te3/Cu joints bonded with the optimized conditions of the modified solid-liquid interdiffusion bonding process changed only slightly after long-term exposure at 473 K (200 °C) for 1000 hours.

  1. Effect of Cooling Rate on the Microstructure and Mechanical Properties of Sn-1.0Ag-0.5Cu-0.2BaTiO3 Composite Solder

    NASA Astrophysics Data System (ADS)

    Yang, Li; Ge, Jinguo; Liu, Haixiang; Xu, Liufeng; Bo, Anbing

    2015-11-01

    The microstructure, interfacial intermetallic compound (IMC) layer, microhardness, tensile properties, and fracture surfaces of Sn-1.0Ag-0.5Cu-0.2BaTiO3 composite solder were explored under three different cooling conditions (water-, air-, and furnace-cooled) during solidification. The average grain size was refined and the volume fraction of primary β-Sn dendrites increased with increasing cooling rate. The thickness of the IMC layer increased as the cooling rate was decreased, and the morphology also transformed from scallop shaped, for a rapid cooling rate, to irregular shaped for slower cooling; a Cu3Sn IMC layer was detected between the Cu6Sn5 IMC and copper substrate under the furnace-cooled condition, but not in water- or air-cooled specimens. The mechanical properties, including the microhardness and tensile properties, improved with rapid solidification due to the combined effects of grain refinement and a secondary strengthening mechanism. Fracture surfaces after tensile tests showed that the amount of dimples decreased and a cleavage-like pattern increased as the cooling rate was decreased from the water-cooled to furnace-cooled condition, so the fracture process transformed from ductile to mixed-mode fracture. A refined microstructure and excellent mechanical properties were obtained for the rapidly cooled sample.

  2. As, Bi, Hg, S, Sb, Sn and Te geochemistry of the J-M Reef, Stillwater Complex, Montana: constraints on the origin of PGE-enriched sulfides in layered intrusions

    USGS Publications Warehouse

    Zientek, M.L.; Fries, T.L.; Vian, R.W.

    1990-01-01

    The J-M Reef is an interval of disseminated sulfides in the Lower Banded series of the Stillwater Complex that is enriched in the platinum group elements (PGE). Palladium and Pt occur in solid solution in base-metal sulfides and as discrete PGE minerals. PGE minerals include sulfides, tellurides, arsenides, antimonides, bismuthides, and alloys with Fe, Sn, Hg, and Au. Several subpopulations can be delineated based on whole-rock chemical analyses for As, Bi, Cu, Hg, Pd, Pt, S, Sb and Te for samples collected from and adjacent to the J-M Reef. In general, samples from within the reef have higher Pt/Cu, Pd/Cu, Pd/Pt, Te/Bi and S/(Te+Bi) than those collected adjacent to the reef. Vertical compositional profiles through the reef suggest that Pd/Cu and Pt/Cu decrease systematically upsection from mineralized to barren rock. The majority of samples with elevated As, Sb and Hg occur adjacent to the reef, not within it, or in sulfide-poor rocks. Neither magma mixing nor fluid migration models readily explain why the minor quantities of sulfide minerals immediately adjacent to the sulfide-enriched layers that form the J-M Reef have different element ratios than the sulfide minerals that form the reef. If all the sulfides formed by exsolution during a magma mixing event and the modal proportion of sulfide now in the rocks are simply the result of mechanical processes that concentrated the sulfides into some layers and not others, then the composition of the sulfide would not be expected to be different. Models that rely upon ascending liquids or fluids are incompatible with the presence of sulfides that are not enriched in PGE immediately below or interlayered with the PGE-enriched sulfides layers. PGE-enriched postcumulus fluids should have reacted to the same extent with sulfides immediately outside the reef as within the reef. One explanation is that some of the sulfide minerals in the rocks outside the reef have a different origin than those that make up the reef. The

  3. Excess vibrational modes and high thermoelectric performance of the quenched and slow-cooled two-phase alloy Cu0.2Ag2.8SbSeTe2.

    PubMed

    Drymiotis, F R; Lindsey, S; Capps, J; Lashley, J C; Rhodes, D; Zhang, Q R; Nucklos, C; Drye, T B

    2011-04-06

    In this article we examine the low-temperature specific heat of slow-cooled Cu(0.2)Ag(2.8)SbSeTe(2) and the thermoelectric performance of quenched samples. We find that the low-temperature specific heat is dominated by two Einstein terms of approximate energies of 2.5 and 5 meV. The specific-heat behavior is consistent with the amorphous low-temperature thermal conductivity behavior and validates the glassy nature of the structure. We performed the synthesis of quenched samples in an attempt to eliminate the presence of micro-cracks, whose existence presumably enhances electronic scattering. We find that quenching eliminates the presence of micro-cracks but does not result in an improvement of the figure of merit. Specifically, the highest ZT obtained in the quenched samples (ZT = 1.5), though very competitive, is still significantly less that the ZT obtained in the slow-cooled samples (ZT = 1.75).

  4. Nonvolatile floating gate memory containing AgInSbTe-SiO2 nanocomposite layer and capping the HfO2/SiO2 composite blocking oxide layer.

    PubMed

    Chiang, Kuo-Chang; Hsieh, Tsung-Eong

    2012-06-08

    An extremely large memory window shift of about 30.7 V and high charge storage density =2.3 × 10(13) cm(-2) at ± 23 V gate voltage sweep were achieved in the nonvolatile floating gate memory (NFGM) device containing the AgInSbTe (AIST)-SiO(2) nanocomposite as the charge trap layer and HfO(2)/SiO(2) as the blocking oxide layer. Due to the deep trap sites formed by high-density AIST nanocrystals (NCs) in the nanocomposite matrix and the high-barrier-height feature of the composite blocking oxide layer, a good retention property of the device with a charge loss of about 16.1% at ± 15 V gate voltage stress for 10(4) s at the test temperature of 85 °C was observed. In addition to inhibiting the Hf diffusion into the programming layer, incorporation of the SiO(2) layer prepared by plasma-enhanced chemical vapor deposition in the sample provided a good Coulomb blockade effect and allowed significant charge storage in AIST NCs. Analytical results demonstrated the feasibility of an AIST-SiO(2) nanocomposite layer in memory device fabrication with a simplified processing method and post-annealing at a comparatively low temperature of 400 °C in comparison with previous NC-based NFGM studies.

  5. Single color upconversion emission in Ho 3+/Yb 3+ and Tm 3+/Yb 3+ doped P 2O 5-MgO 2-Sb 2O 3-MnO 2-AgO glasses

    NASA Astrophysics Data System (ADS)

    Ming, Chengguo; Song, Feng; Hou, Jing; Yu, Yin; Zhang, Gong; Yu, Hua; Sun, Tongqing; Tian, Jianguo

    2011-06-01

    The Ho 3+/Yb 3+ and Tm 3+/Yb 3+ doped P 2O 5-MgO 2-Sb 2O 3-MnO 2-AgO glasses were prepared by high temperature melting method. Under a 975 nm laser diode (LD) excitation, the single red and single blue upconversion (UC) emissions were observed in Ho 3+/Yb 3+ and Tm 3+/Yb 3+ doped samples, respectively. By studying the spontaneous radiative and multiphonon relaxation probabilities, we find that the multiphonon relaxation probability of 5I 6 (Ho 3+) state is very large (1.39 × 10 6 s - 1 ), which is helpful to the population of 5I 7 state. The multiphonon relaxation probability of 3H 5 and 3F 2,3 (Tm 3+) is also very large, which results in lots of population in 3F 4 and 3H 4 states. The results are that the red UC emission of Ho 3+ and the blue UC emission of Tm 3+ are stronger.

  6. Reaction Mechanism and Mechanical Properties of the Flip-Chip Sn-3.0Ag-0.5Cu Solder Bump with Cu/Ni- xCu/Ti Underbump Metallization After Various Reflows

    NASA Astrophysics Data System (ADS)

    Peng, Chung-Nan; Duh, Jenq-Gong

    2009-12-01

    Ni underbump metallization (UBM) has been widely used as the diffusion barrier between solder and Cu pads. To retard the fast dissolution rate of Ni UBM, Cu was added into Ni thin films. The Ni-Cu UBM can provide extra Cu to the solders to maintain the Cu6Sn5 intermetallic compound (IMC) at the interface, which can thus significantly decrease the Ni dissolution rate. In this study, the Cu content of the sputtered Cu/Ni- xCu/Ti UBM was varied from 0 wt.% to 20 wt.%. Sn-3Ag-0.5Cu solder was reflowed with Cu/Ni-Cu/Ti UBM one, three, and five times. Reflow and cooling conditions altered the morphology of the IMCs formed at the interface. The amount of (Cu,Ni)6Sn5 increased with increasing Cu content in the Ni-Cu film. The Cu concentration of the intermetallic compound was strongly dependent on the composition of the Ni-Cu films. The results of this study suggest that Cu-rich Ni- xCu UBM can be used to suppress interfacial spalling and improve shear strength and pull strength of solder joints.

  7. Interfacial Reaction Between Sn3.0Ag0.5Cu Solder and ENEPIG for Fine Pitch BGA by Stencil Printing

    NASA Astrophysics Data System (ADS)

    Liu, Ziyu; Cai, Jian; Wang, Qian; He, Xi; Chen, Yu

    2014-09-01

    In this work, solder balls in ball grid array packaging technology with the pitch of 300 μm were fabricated by stencil printing solder paste and then reflowed at high temperature. In order to evaluate the quality of solder ball after printing and reflowing processes, the mechanical performance of the joint between the solder balls and the pad was measured by shear test and the electrical resistance was tested after assembly of the substrate and printed circuit board. A comparative study of pad size on the interfacial reaction between solder paste and surface finish of electroless nickel-electroless palladium-immersion gold on the organic substrate was performed and then analyzed by observing the microstructure at the interface. Large discontinuous (Cu,Ni)6Sn5 was found at the interface of the solder with the pad size of 120 μm, while spalled (Pd,Ni)Sn4 and thin (Cu,Ni)6Sn5 layer appeared for a pad size of 140 μm. The IMC (intermetallic compounds) was determined by the residual Cu concentration, the Pd concentration in the solder, and the Ni2SnP barrier layer morphology at the interface, which were significantly influenced by the pad size. A reaction model during the reflow was proposed to illustrate the growth of the IMC and the relationship between the IMC and the pad size. With Pd concentration higher than the solubility of Pd in the solder, spalled (Pd,Ni)Sn4 took shape along the interface. The solubility of Pd was influenced by Ni concentration; however, the Ni diffusion from the substrate was largely dependent on the barrier layer Ni2SnP. Furthermore, the Ni diffusion also impacted the growth and morphology of (Cu,Ni)6Sn5, which was not only limited by the Cu concentration.

  8. Structure and vibrational dynamics of interfacial Sn layers in Sn/Si multilayers

    NASA Astrophysics Data System (ADS)

    Cuenya, B. Roldan; Keune, W.; Sturhahn, W.; Toellner, T. S.; Hu, M. Y.

    2001-12-01

    The structure and vibrational dynamics of room-temperature-grown nanoscale Sn/amorphous (a-)Si multilayers have been studied by x-ray diffraction, Raman scattering, 119Sn Mössbauer spectroscopy, and 119Sn nuclear-resonant inelastic x-ray scattering (NRIXS) of synchrotron radiation. With increasing Sn-layer thickness, the formation of β-Sn was observed, except at the Sn/Si interfaces, where a 10-Å-thick metastable pure amorphous-α-Sn-like layer remains stabilized. By means of NRIXS we have measured the Sn-projected vibrational density of states (VDOS) in these multilayers (in particular, at the interfaces), and in 500-Å-thick epitaxial α-Sn films on InSb(001) as a reference. Further, the Sn-specific Lamb-Mössbauer factor (f factor), mean kinetic energy per atom, mean atomic force constant, and vibrational entropy per atom were obtained. The VDOS of the amorphous-α-Sn-like interface layer is observed to be distinctly different from that of (bulk) α-Sn and β-Sn, and its prominent vibrational energies are found to scale with those of amorphous Ge and Si. The observed small difference in vibrational entropy (ΔS/kB=+0.17+/-0.05 per atom) between α-Sn and interfacial amorphous-α-like Sn does not account for the stability of the latter phase.

  9. Distribution of chemical elements in soils and stream sediments in the area of abandoned Sb-As-Tl Allchar mine, Republic of Macedonia.

    PubMed

    Bačeva, Katerina; Stafilov, Trajče; Šajn, Robert; Tănăselia, Claudiu; Makreski, Petre

    2014-08-01

    The aim of this study was to investigate the distribution of some toxic elements in topsoil and subsoil, focusing on the identification of natural and anthropogenic element sources in the small region of rare As-Sb-Tl mineralization outcrop and abandoned mine Allchar known for the highest natural concentration of Tl in soil worldwide. The samples of soil and sediments after total digestion were analyzed by inductively coupled plasma-mass spectrometry (ICP-MS) and inductively coupled plasma-atomic emission spectrometry (ICP-AES). Factor analysis (FA) was used to identify and characterize element associations. Six associations of elements were determined by the method of multivariate statistics: Rb-Ta-K-Nb-Ga-Sn-Ba-Bi-Li-Be-(La-Eu)-Hf-Zr-Zn-In-Pd-Ag-Pt-Mg; Tl-As-Sb-Hg; Te-S-Ag-Pt-Al-Sc-(Gd-Lu)-Y; Fe-Cu-V-Ge-Co-In; Pd-Zr-Hf-W-Be and Ni-Mn-Co-Cr-Mg. The purpose of the assessment was to determine the nature and extent of potential contamination as well as to broadly assess possible impacts to human health and the environment. The results from the analysis of the collected samples in the vicinity of the mine revealed that As and Tl elements have the highest median values. Higher median values for Sb are obviously as a result of the past mining activities and as a result of area surface phenomena in the past.

  10. Effect of indium and antimony doping in SnS single crystals

    SciTech Connect

    Chaki, Sunil H. Chaudhary, Mahesh D.; Deshpande, M.P.

    2015-03-15

    Highlights: • Single crystals growth of pure SnS, indium doped SnS and antimony doped SnS by direct vapour transport (DVT) technique. • Doping of In and Sb occurred in SnS single crystals by cation replacement. • The replacement mechanism ascertained by EDAX, XRD and substantiated by Raman spectra analysis. • Dopants concentration affects the optical energy bandgap. • Doping influences electrical transport properties. - Abstract: Single crystals of pure SnS, indium (In) doped SnS and antimony (Sb) doped SnS were grown by direct vapour transport (DVT) technique. Two doping concentrations of 5% and 15% each were employed for both In and Sb dopants. Thus in total five samples were studied viz., pure SnS (S1), 5% In doped SnS (S2), 15% In doped SnS (S3), 5% Sb doped SnS (S4) and 15% Sb doped SnS (S5). The grown single crystal samples were characterized by evaluating their surface microstructure, stoichiometric composition, crystal structure, Raman spectroscopy, optical and electrical transport properties using appropriate techniques. The d.c. electrical resistivity and thermoelectric power variations with temperature showed semiconducting and p-type nature of the as-grown single crystal samples. The room temperature Hall Effect measurements further substantiated the semiconducting and p-type nature of the as-grown single crystal samples. The obtained results are deliberated in detail.

  11. Magnetic and Transport Properties of RESn xSb 2 ( RE=La, Ce, Pr, Nd, Sm; x=0.5, 0.7)

    NASA Astrophysics Data System (ADS)

    Deakin, Laura; Ferguson, Michael J.; Sprague, Michael J.; Mar, Arthur; Sharma, R. D.; Jones, Colin H. W.

    2002-03-01

    The nonstoichiometric rare-earth tin antimonides RESnxSb2 (RE=La, Ce, Pr, Nd, Sm) were characterized by 119Sn Mössbauer spectroscopy and their transport and magnetic properties were measured. The presence of nearly zero-valent Sn is suggested by the similarity of the 119Sn Mössbauer parameters in LaSnxSb2 (0.1≤x≤0.7) to those of elemental β-Sn. All RESn0.7Sb2 compounds exhibit metallic behavior. CeSn0.7Sb2 and NdSn0.7Sb2 show drops in resistivity below 8 K; this is attributed to a transition to a magnetically ordered state. At 25 K, CeSn0.7Sb2 also displays a resistivity minimum characteristic of ordered Kondo lattices. Magnetic studies indicate that, below 4 K, CeSnxSb2 (x=0.5, 0.7) orders ferromagnetically, whereas NdSnxSb2 (x=0.5, 0.7) orders antiferromagnetically and undergoes a metamagnetic transition at HC=5.5 T and 2 K. Neither PrSnxSb2 nor SmSnxSb2 (x=0.5, 0.7) displays long-range magnetic ordering above 2 K.

  12. Investigation of electrochemical migration on Sn-0.7Cu-0.3Ag-0.03P-0.005Ni solder alloy in HNO{sub 3} solution

    SciTech Connect

    Sarveswaran, C.; Othman, N. K.; Ali, M. Yusuf Tura; Ani, F. Che; Samsudin, Z.

    2015-09-25

    Current issue in lead-free solder in term of its reliability is still under investigation. This high impact research attempts to investigate the electrochemical migration (ECM) on Sn-0.7Cu-0.3Ag-0.03P-0.005Ni solder alloy by Water Drop Test (WDT) in different concentration of HNO{sub 3} solution. The concentration of HNO{sub 3} solution used in this research was 0.05, 0.10, 0.50 and 1M. Optical Microscope (OM), Field Emission Scanning Electron Microscope (FESEM) and Energy Dispersive X-Ray Analysis (EDX) were carried out in order to analysis the ECM behavior based on the growth of dendrite formation after WDT. In general, the results demonstrated that dendrite growth is faster in higher concentration compared with low concentration of HNO{sub 3}. The concentration of HNO{sub 3} solution used has a strong correlation with Mean-Time-To-Failure (MTTF). As the concentration of HNO{sub 3} increases, the MTTF value decreases. Based on the MTTF results the solder alloy in 1M HNO{sub 3} solution is most susceptible to ECM. SnO{sub 2} forms as a corrosion by-product in the samples proved by EDX analysis. The solder alloy poses a high reliability risk in microelectronic devices during operation in 1M HNO{sub 3} solution.

  13. Liquidus projection of the Ag-Ba-Ge system and melting points of clathrate type-I compounds

    NASA Astrophysics Data System (ADS)

    Zeiringer, I.; Grytsiv, A.; Brož, P.; Rogl, P.

    2012-12-01

    The liquidus and solidus projection has been constructed for the Ag-Ba-Ge system up to 33.3 at% Ba, using electron micro probe analysis (EPMA), X-ray powder diffraction (XRD) and differential thermal analysis (DSC/DTA). Eight different primary crystallization regions were found: (Ge), Ba8AgxGe46-x-y□y (κI) (□ is a vacancy), Ba6AgxGe25-x (κIx), BaGe2, Ba(Ag1-xGex)2 (τ1), BaAg2-xGe2+x (τ2) BaAg5 and (Ag). The ternary invariant reactions have been determined for the region investigated and are the basis for a Schulz-Scheil diagram. The second part of this work provides a comprehensive compilation of melting points of ternary A8TxM46-x and quaternary (A=Sr, Ba, Eu; T=Ni, Pd, Pt, Cu, Ag, Au, Zn, Cd, B, Al, Ga; M=Si, Ge, Sn) clathrate type-I compounds and decomposition temperatures of inverse clathrate type-I Ge38{P,As,Sb}8{Cl,Br,I}8, Si46-xPxTey and tin based compounds.

  14. Extension of the excitation functions of deuteron induced reactions on natSn up to 50 MeV

    NASA Astrophysics Data System (ADS)

    Hermanne, A.; Tárkányi, F.; Ditrói, F.; Takács, S.

    2017-01-01

    Using the stacked-foil activation technique, cross-sections of deuteron induced reactions on natural Sn targets were determined up to 50 MeV. Excitation functions are reported for the product nuclides 116mSb, 117Sb, 118mSb, 120mSb 122m+gSb, 124m+gSb, 110Sn(cum), 113m+gSn(cum), 117mSn, 110mIn(cum), 110gIn, 111m+gIn(cum), 113mIn, 114mIn 115mIn. Comparison with earlier published data at lower energy is discussed. For all excitation functions a theoretical calculation using the TALYS 1.6 (on-line TENDL-2015 library) code is shown.

  15. Efficient planar Sb2S3 solar cells using a low-temperature solution-processed tin oxide electron conductor.

    PubMed

    Lei, Hongwei; Yang, Guang; Guo, Yaxiong; Xiong, Liangbin; Qin, Pingli; Dai, Xin; Zheng, Xiaolu; Ke, Weijun; Tao, Hong; Chen, Zhao; Li, Borui; Fang, Guojia

    2016-06-28

    Efficient planar antimony sulfide (Sb2S3) heterojunction solar cells have been made using chemical bath deposited (CBD) Sb2S3 as the absorber, low-temperature solution-processed tin oxide (SnO2) as the electron conductor and poly (3-hexylthiophene) (P3HT) as the hole conductor. A solar conversion efficiency of 2.8% was obtained at 1 sun illumination using a planar device consisting of F-doped SnO2 substrate/SnO2/CBD-Sb2S3/P3HT/Au, whereas the solar cells based on a titanium dioxide (TiO2) electron conductor exhibited a power conversion efficiency of 1.9%. Compared with conventional Sb2S3 sensitized solar cells, the high-temperature processed mesoscopic TiO2 scaffold is no longer needed. More importantly, a low-temperature solution-processed SnO2 layer was introduced for electron transportation to substitute the high-temperature sintered dense blocking TiO2 layer. Our planar solar cells not only have simple geometry with fewer steps to fabricate but also show enhanced performance. The higher efficiency of planar Sb2S3 solar cell devices based on a SnO2 electron conductor is attributed to their high transparency, uniform surface, efficient electron transport properties of SnO2, suitable energy band alignment, and reduced recombination at the interface of SnO2/Sb2S3.

  16. Optical Sensitizing of Photorefractive Sn2P2S6 With CW and Pulsed Pre-Exposure (Preprint)

    DTIC Science & Technology

    2015-06-16

    time delayed transient photoinduced absorption ( photo -chromism) [1], and transient photoinduced scattering (transient beam fanning) [2]. The second...smaller effect of sensitizing with considerably different lifetimes of secondary centers was observed in nominally undoped Sn2P2S6, tellurium doped ...Sn2P2S6:Te 1%, and co- doped Sn2P2S6:Sb:Te 0.5%, Sb 0.5% samples. Well below the saturation level, the light induced absorption increases linearly

  17. Doping CoSb3 p-type with Al substitution for Sb

    NASA Astrophysics Data System (ADS)

    Adams, Michael J.; Nielsen, Michele D.; Heremans, Joseph P.

    2014-03-01

    Skutterudites such as CoSb3 are compounds composed of group IX-B atoms (Co, Rh, and Ir) forming a simple cubic structure, and group V-A3 pnictide atoms (primarily Sb and As) forming rings inside 6 of every 8 cubes. The remaining cubes remain empty. A common method for reducing thermal conductivity is to introduce impurity atoms such as rare-earths in the cubes that act as rattlers. P-type doping of CoSb3 has led to some advances in zT, but the p-type material remains less performing than the n-type material due to the fact that the valence band, dominated by Sb levels, has a low effective mass. A promising method for improving p-type properties is to introduce an effective resonant level into the energy levels occupied by the light hole band, thereby increasing the Seebeck coefficient without strongly effecting other transport properties. A first attempt using Sn substitution was not successful. Here we try various concentrations of Al substituted at Sb sites to generate a resonant level. Material properties are measured and compared with a calculated Pisarenko relation, where thermopower is plotted as a function of hole concentration. Financial support for this investigation was provided by the U.S. Department of Energy (DOE)-U.S.-China Clean Energy Research Center (CERC-CVC) under the award No. DE-PI0000012.

  18. Theoretical investigations of half-metallic ferromagnetism in new Half-Heusler YCrSb and YMnSb alloys using first-principle calculations

    NASA Astrophysics Data System (ADS)

    Atif Sattar, M.; Rashid, Muhammad; Hashmi, M. Raza; Ahmad, S. A.; Imran, Muhammad; Hussain, Fayyaz

    2016-10-01

    Structural, electronic, and magnetic properties of new predicted half-Heusler YCrSb and YMnSb compounds within the ordered MgAgAs C1b-type structure are investigated by employing first-principal calculations based on density functional theory. Through the calculated total energies of three possible atomic placements, we find the most stable structures regarding YCrSb and YMnSb materials, where Y, Cr(Mn), and Sb atoms occupy the (0.5, 0.5, 0.5), (0.25, 0.25, 0.25), and (0, 0, 0) positions, respectively. Furthermore, structural properties are explored for the non-magnetic and ferromagnetic and anti-ferromagnetic states and it is found that both materials prefer ferromagnetic states. The electronic band structure shows that YCrSb has a direct band gap of 0.78 eV while YMnSb has an indirect band gap of 0.40 eV in the majority spin channel. Our findings show that YCrSb and YMnSb materials exhibit half-metallic characteristics at their optimized lattice constants of 6.67 Å and 6.56 Å, respectively. The half-metallicities associated with YCrSb and YMnSb are found to be robust under large in-plane strains which make them potential contenders for spintronic applications.

  19. Shell model calculation for Te and Sn isotopes in the vicinity of {sup 100}Sn

    SciTech Connect

    Yakhelef, A.; Bouldjedri, A.

    2012-06-27

    New Shell Model calculations for even-even isotopes {sup 104-108}Sn and {sup 106,108}Te, in the vicinity of {sup 100}Sn have been performed. The calculations have been carried out using the windows version of NuShell-MSU. The two body matrix elements TBMEs of the effective interaction between valence nucleons are obtained from the renormalized two body effective interaction based on G-matrix derived from the CD-bonn nucleon-nucleon potential. The single particle energies of the proton and neutron valence spaces orbitals are defined from the available spectra of lightest odd isotopes of Sb and Sn respectively.

  20. The Nucleation of Sn in Undercooled Melts: The Effect of Metal Impurities

    NASA Astrophysics Data System (ADS)

    Parks, Gregory; Faucett, Austin; Fox, Craig; Smith, Jake; Cotts, Eric

    2014-11-01

    The dependence of the solidification temperature on the concentration x of impurity atoms, M, of Sn-M x alloys after cooling from the melt was measured separately for M = Co, Ni, Ag, and Cu. For a comparison, similar measurements were performed on SAC305-Ni x alloys. Large variations in undercooling were observed. It was found that the Ag atoms dissolved in the Sn-Ag melt significantly lowered undercooling, although the presence of Ag3Sn intermetallic compounds did not. While Cu6Sn5 intermetallic compounds in Sn-Cu melts did not significantly lower undercooling, the undercooling of a Sn-Cu melt in contact with a Cu interface was significantly reduced. The addition of Ni to Pb-free solder SAC305 caused a factor of two reduction in the undercooling, similar to that observed after the addition of Ni to high-purity Sn.

  1. Enthalpy of mixing of liquid systems for lead free soldering: Ni–Sb–Sn system

    PubMed Central

    Elmahfoudi, A.; Fürtauer, S.; Sabbar, A.; Flandorfer, H.

    2012-01-01

    The partial and integral enthalpies of mixing of liquid ternary Ni–Sb–Sn alloys were determined along five sections xSb/xSn = 3:1, xSb/xSn = 1:1, xSb/xSn = 1:3, xNi/xSn = 1:4, and xNi/xSb = 1:4 at 1000 °C in a large compositional range using drop calorimetry techniques. The mixing enthalpy of Ni–Sb alloys was determined at the same temperature and described by a Redlich–Kister polynomial. The other binary data were carefully evaluated from literature values. Our measured ternary data were fitted on the basis of an extended Redlich–Kister–Muggianu model for substitutional solutions. Additionally, a comparison of these results to the extrapolation model of Toop is given. The entire ternary system shows exothermic values of ΔmixH ranging from approx. −1300 J/mol, the minimum in the Sb–Sn binary system down to approx. −24,500 J/mol towards Ni–Sb. No significant ternary interaction could be deduced from our data. PMID:23471085

  2. Thermal expansion and magnetostriction of pure doped RAgSb2 (R = Y, Sm, La) single crystals

    SciTech Connect

    Bud'ko, S.; Law, S.; Canfield, P.; Samolyuk, G.; Torikachvili, M.; Schmiedeshoff, G.

    2008-02-20

    Data on temperature-dependent, anisotropic thermal expansion in pure and doped RAgSb{sub 2} (R = Y, Sm, La) single crystals are presented. Using the Ehrenfest relation and heat capacity measurements, uniaxial pressure derivatives for long range magnetic ordering and charge density wave transition temperatures are evaluated and compared with the results of the direct measurements under hydrostatic pressure. In-plane and c-axis pressure have opposite effects on the phase transitions in these materials, with in-plane effects being significantly weaker. Quantum oscillations in magnetostriction were observed for the three pure compounds, with the possible detection of new frequencies in SmAgSb{sub 2} and LaAgSb{sub 2}. The uniaxial (along the c-axis) pressure derivatives of the dominant extreme orbits ({beta}) were evaluated for YAgSb{sub 2} and LaAgSb{sub 2}.

  3. Thermal expansion and magnetostriction of pure and doped RAgSb(2) (R = Y, Sm, La) single crystals.

    PubMed

    Bud'ko, S L; Law, S A; Canfield, P C; Samolyuk, G D; Torikachvili, M S; Schmiedeshoff, G M

    2008-03-19

    Data on temperature-dependent, anisotropic thermal expansion in pure and doped RAgSb(2) (R = Y, Sm, La) single crystals are presented. Using the Ehrenfest relation and heat capacity measurements, uniaxial pressure derivatives for long range magnetic ordering and charge density wave transition temperatures are evaluated and compared with the results of the direct measurements under hydrostatic pressure. In-plane and c-axis pressure have opposite effects on the phase transitions in these materials, with in-plane effects being significantly weaker. Quantum oscillations in magnetostriction were observed for the three pure compounds, with the possible detection of new frequencies in SmAgSb(2) and LaAgSb(2). The uniaxial (along the c-axis) pressure derivatives of the dominant extreme orbits (β) were evaluated for YAgSb(2) and LaAgSb(2).

  4. Characterization of silver photodiffusion in Ge{sub 8}Sb{sub 2}Te{sub 11} thin films

    SciTech Connect

    Kumar, Sandeep; Singh, D.; Sandhu, S.; Thangaraj, R.

    2015-06-24

    Silver-doped amorphous Ge{sub 8}Sb{sub 2}Te{sub 11} thin films have been prepared by photodiffusion at room-temperature; the Ge{sub 8}Sb{sub 2}Te{sub 11}/Ag bilayer was deposited by vacuum thermal evaporation. Photodiffusion of Ag into the amorphous Ge{sub 8}Sb{sub 2}Te{sub 11} thin films has been carried out by illuminating the prepared Ge{sub 8}Sb{sub 2}Te{sub 11}/Ag bilayer with halogen lamp. The photodiffused silver depth profile was traced by means of time of flight secondary ion mass spectroscopy. The film remains amorphous after Ag photodiffusion. The crystallization temperature of the films was evaluated by temperature dependent sheet resistance measurement. The amorphous nature and crystalline phases of the films have been identified by using X-ray diffraction.

  5. Theoretical electron scattering amplitudes and spin polarizations. Electron energies 100 to 1500 eV Part II. Be, N, O, Al, Cl, V, Co, Cu, As, Nb, Ag, Sn, Sb, I, and Ta targets

    NASA Astrophysics Data System (ADS)

    Wildhaber, M. L.; Wikle, C. K.; Anderson, C. J.; Franz, K. J.; Moran, E. H.; Dey, R.

    2012-12-01

    Recent decades have brought substantive changes in land use and climate across the earth, prompting a need to think of population and community ecology not as a static entity, but as a dynamic process. Increasingly there is evidence of ecological changes due to climate change. Although much of this evidence comes from ground-truth observations of biogeographic data, there is increasing reliance on models that relate climate variables to biological systems. Such models can then be used to explore potential changes to population and community level ecological systems in response to climate scenarios as obtained from global climate models (GCMs). A key issue associated with modeling ecosystem response to climate is GCM downscaling to regional and local ecological/biological response models that can be used in vulnerability and risk assessments of the potential effects of climate change. The need is for an explicit means for scaling results up or down multiple hierarchical levels and an effective assessment of the level of uncertainty surrounding current knowledge, data, and data collection methods with these goals identified as in need of acceleration in the U.S. Climate Change Science Program FY2009 Implementation Priorities. In the end, such work should provide the information needed to develop adaptation and mitigation methodologies to minimize the effects of directional and nonlinear climate change on the Nation's land, water, ecosystems, and biological populations. We are working to develop an approach that includes multi-scale and hierarchical Bayesian modeling of Missouri River sturgeon population dynamics. Statistical linkages are defined to quantify implications of climate on fish populations of the Missouri River ecosystem. This approach is a hybrid between physical (deterministic) downscaling and statistical downscaling, recognizing that there is uncertainty in both. The model must include linkages between climate and habitat, and between habitat and population. A key advantage of the hierarchical approach used in this study is that it incorporates various sources of observations and includes established scientific knowledge, and associated uncertainties. The goal is to evaluate the potential distributional changes in an ecological system, given distributional changes implied by a series of linked climate and system models under various emissions/use scenarios. The predictive modeling system being developed will be a powerful tool for evaluating management options for coping with global change consequences and assessing uncertainty of those evaluations. Specifically for the endangered pallid sturgeon (Scaphirhynchus albus), we are already able to assess potential effects of any climate scenario on growth and population size distribution. Future models will incorporate survival and reproduction. Ultimately, these models provide guidance for successful recovery and conservation of the pallid sturgeon. Here we present a basic outline of the approach we are developing and a simple pallid sturgeon example to demonstrate how multiple scales and parameter uncertainty are incorporated.

  6. Layer-by-layer growth of Ag on Ag(111) induced by enhanced nucleation: A model study for surfactant-mediated growth

    NASA Astrophysics Data System (ADS)

    Rosenfeld, Georg; Servaty, Roland; Teichert, Christian; Poelsema, Bene; Comsa, George

    1993-08-01

    It has been reported that the growth mode of Ag on Ag(111), which is usually multilayer (3D), changes to layer-by-layer (2D) growth if Sb is used as a surfactant. In a model study on the clean system Ag/Ag(111) (without any surfactant) we find that two-dimensional layers do grow, if the substrate is prepared with an anomalously high density of Ag nuclei. As an enhanced density of nuclei is also observed in the presence of Sb, this effect may explain the mechanism for surfactant-induced layer-by-layer growth.

  7. Transparent conducting amorphous Zn-Sn-O films deposited by simultaneous dc sputtering

    NASA Astrophysics Data System (ADS)

    Moriga, Toshihiro; Hayashi, Yukako; Kondo, Kumiko; Nishimura, Yusuke; Murai, Kei-Ichiro; Nakabayashi, Ichiro; Fukumoto, Hidenori; Tominaga, Kikuo

    2004-07-01

    The films of ZnO-SnO2 system were deposited on glass substrates by simultaneous dc magnetron sputtering apparatus, in which ZnO and SnO2:Sb (Sb2O5 3 wt % doped) targets faced each other. The substrate temperatures were maintained at 150, 250, and 350 °C, respectively. As an experimental parameter, current ratio δ=IZn/(IZn+ISn), which corresponds to ZnO target current (IZn) divided by the sum of ZnO and SnO2:Sb target currents (IZn+ISn), was adopted. Amorphous transparent films appeared for 0.50<=δ<=0.73, which could be correlated to compositions as [Zn]/([Sn]+[Zn])=0.33-0.67 by x-ray fluorescent analysis. At [Zn]/([Sn]+[Zn])=1/2 (δ=0.62), 2/3 (δ=0.73) and all other ratios in as-deposited films, neither crystalline ZnSnO3 nor Zn2SnO4 was obtained. Minimum resistivity of 4-6×10-2 Ω cm was found at δ=0.50, whose composition was approximately SnO2.ZnSnO3. Resistivity increased linearly with an increase of the current ratio, until the composition reached Zn2SnO4. The amorphous phase showed a constant Hall mobility of ~10 cm2/V s and a linear decrease in carrier concentration with increasing Zn content. .

  8. A study of high copper amalgams. IV. Formation of eta Cu-Sn (Cu6Sn5) crystals in a high copper dispersant amalgam matrix.

    PubMed

    Okabe, T; Mitchell, R J; Fairhurst, C W

    1979-03-01

    In an HCD amalgam, eta Cu-Sn crystals were found dispersed within gamma1 matrix areas. Previously, eta Cu-Sn phase was thought to form only as part of a reaction zone surrounding Ag-Cu dispersant particles. The eta Cu-Sn crystals found in matrix areas of this HCD amalgam are smaller and more widely scattered than eta Cu-Sn crystals dispersed in the gamma1 matrix of HCSC amalgams.

  9. NbFeSb based p-type half-Heusler for power generation applications

    NASA Astrophysics Data System (ADS)

    Joshi, Giri; He, Ran; Engber, Michael; Samsonidze, Georgy; Pantha, Tej; Dahal, Ekraj; Dahal, Keshab; Yang, Jian; Lan, Yucheng; Kozinsky, Boris; Ren, Zhifeng

    2015-03-01

    We report a peak dimensionless figure-of-merit (ZT) of ~1 at 700 oC in nanostructured p-type Nb0.6Ti0.4FeSb0.95Sn0.05composition. Even though the power factor of the Nb0.6Ti0.4FeSb0.95Sn0.05 composition is improved by 25% in comparison to the previously reported p-type Hf0.44Zr0.44Ti0.12CoSb0.8Sn0.2, the ZT value is not increased due to a higher thermal conductivity. However, the higher power factor of the Nb0.6Ti0.4FeSb0.95Sn0.05 composition led to a 15% increase in power output of a thermoelectric device in comparison to a device made from the previous best material Hf0.44Zr0.44Ti0.12CoSb0.8Sn0.2. The n-type material used to make the unicouple device is the best reported nanostructured Hf0.25Zr0.75NiSn0.99Sb0.01 composition with the lowest hafnium (Hf) content. Both the p- and n-type nanostructured samples are prepared by ball milling the arc melted ingot and hot pressing the finely ground powders. Moreover, the raw material cost of the Nb0.6Ti0.4FeSb0.95Sn0.05 composition is more than six times lower compared to the cost of the previous best p-type Hf0.44Zr0.44Ti0.12CoSb0.8Sn0.2. This cost reduction is crucial for these materials to be used in large-scale quantities for vehicle and industrial waste heat recovery applications. DOE:DE-EE0004840.

  10. Diameter-Controlled and Surface-Modified Sb2Se3 Nanowires and Their Photodetector Performance

    NASA Astrophysics Data System (ADS)

    Choi, Donghyeuk; Jang, Yamujin; Lee, Jeehee; Jeong, Gyoung Hwa; Whang, Dongmok; Hwang, Sung Woo; Cho, Kyung-Sang; Kim, Sang-Wook

    2014-10-01

    Due to its direct and narrow band gap, high chemical stability, and high Seebeck coefficient (1800 μVK-1), antimony selenide (Sb2Se3) has many potential applications, such as in photovoltaic devices, thermoelectric devices, and solar cells. However, research on the Sb2Se3 materials has been limited by its low electrical conductivity in bulk state. To overcome this challenge, we suggest two kinds of nano-structured materials, namely, the diameter-controlled Sb2Se3 nanowires and Ag2Se-decorated Sb2Se3 nanowires. The photocurrent response of diameter-controlled Sb2Se3, which depends on electrical conductivity of the material, increases non-linearly with the diameter of the nanowire. The photosensitivity factor (K = Ilight/Idark) of the intrinsic Sb2Se3 nanowire with diameter of 80-100 nm is highly improved (K = 75). Additionally, the measurement was conducted using a single nanowire under low source-drain voltage. The dark- and photocurrent of the Ag2Se-decorated Sb2Se3 nanowire further increased, as compared to that of the intrinsic Sb2Se3 nanowire, to approximately 50 and 7 times, respectively.

  11. Enthalpies of mixing of liquid systems for lead free soldering: Co–Sb–Sn

    PubMed Central

    Elmahfoudi, A.; Sabbar, A.; Flandorfer, H.

    2012-01-01

    The partial and integral enthalpy of mixing of molten ternary Co–Sb–Sn alloys was determined performing high temperature drop calorimetry in a large compositional range at 1273 K. Measurements have been done along five sections, xSb/xSn ≈ 1:1, xSb/xSn ≈ 1:3, xSb/xSn ≈ 3:1, xCo/xSn ≈ 1:4, and xCo/xSb ≈ 1:5. Additionally, binary alloys of the constituent systems Co–Sb and Co–Sn were investigated at the same temperature. All the binary data were evaluated by means of a standard Redlich–Kister polynomial fit whereas ternary data were fitted on the basis of an extended Redlich–Kister–Muggianu model for substitutional solutions. An iso-enthalpy plot of the ternary system was constructed. In addition, the extrapolation Model of Toop was applied and compared to our data. PMID:27087752

  12. In Situ Binding Sb Nanospheres on Graphene via Oxygen Bonds as Superior Anode for Ultrafast Sodium-Ion Batteries.

    PubMed

    Wan, Fang; Guo, Jin-Zhi; Zhang, Xiao-Hua; Zhang, Jing-Ping; Sun, Hai-Zhu; Yan, Qingyu; Han, Dong-Xue; Niu, Li; Wu, Xing-Long

    2016-03-01

    Graphene incorporation should be one effective strategy to develop advanced electrode materials for a sodium-ion battery (SIB). Herein, the micro/nanostructural Sb/graphene composite (Sb-O-G) is successfully prepared with the uniform Sb nanospheres (∼100 nm) bound on the graphene via oxygen bonds. It is revealed that the in-situ-constructed oxygen bonds play a significant role on enhancing Na-storage properties, especially the ultrafast charge/discharge capability. The oxygen-bond-enhanced Sb-O-G composite can deliver a high capacity of 220 mAh/g at an ultrahigh current density of 12 A/g, which is obviously superior to the similar Sb/G composite (130 mAh/g at 10 A/g) just without Sb-O-C bonds. It also exhibits the highest Na-storage capacity compared to Sb/G and pure Sb nanoparticles as well as the best cycling performance. More importantly, this Sb-O-G anode achieves ultrafast (120 C) energy storage in SIB full cells, which have already been shown to power a 26-bulb array and calculator. All of these superior performances originate from the structural stability of Sb-O-C bonds during Na uptake/release, which has been verified by ex situ X-ray photoelectron spectroscopies and infrared spectroscopies.

  13. ([M(NH{sub 3}){sub 6}][Ag{sub 4}M{sub 4}Sn{sub 3}Se{sub 13}]){sub ∞} (M=Zn, Mn): Three-dimensional chalcogenide frameworks constructed from quaternary metal selenide clusters with two different transition metals

    SciTech Connect

    Xiong, Wei-Wei; Miao, Jianwei; Li, Pei-Zhou; Zhao, Yanli; Liu, Bin; Zhang, Qichun

    2014-10-15

    Herein we report solvothermal syntheses of two new three-dimensional chalcogenide frameworks ([M(NH{sub 3}){sub 6}][Ag{sub 4}M{sub 4}Sn{sub 3}Se{sub 13}]){sub n} (M=Zn (1), Mn (2)), which consist of quaternary metal selenide clusters with two different transition metals. The compounds represent the first Ag–Zn/Mn–Sn–Se based quaternary anionic frameworks. The optical studies show that the band gaps for 1 and 2 are 2.09 eV and 1.71 eV, respectively. Moreover, the photoelectrochemical study indicates that compound 1 displays n-type semiconducting behaviour and is photoactive under visible light illumination (λ>400 nm). - Graphical abstract: Two 3D framework selenides, [M(NH{sub 3}){sub 6}][Ag{sub 4}M{sub 4}Sn{sub 3}Se{sub 13}] (M=Zn (1), Mn (2)), constructed from quaternary metal selenide clusters, have been solvothermally synthesized and are photoactive under visible light illumination. - Highlights: • Two new three-dimensional selenide frameworks. • Quaternary metal selenide clusters with two different transition metals. • Photoelectrochemical study.

  14. Electrodeposition of Pb-free Sn alloys in pulsed current

    NASA Astrophysics Data System (ADS)

    Neveu, B.; Lallemand, F.; Poupon, G.; Mekhalif, Z.

    2006-03-01

    A pulsed electrodeposition method is applied to the preparation of Pb-free Sn alloys solder bumps for flip-chip bonding with the aid of a photolithography. Sn-Ag alloy films with near eutectic compositions (Sn-3.5% Ag) were obtained using a pyrophosphate-iodide plating baths regardless under direct or pulsed current. The composition and the morphology of electrodeposits were examinated by SEM and X-ray photoelectron spectroscopy (XPS). The main results revealed that the organic additives affect the electrochemical reduction of tin-silver and the direct consequence on making Sn-Ag alloy is a decreased deposition rate. However, the addition of additives in the plating bath suppressed the dendritic tin-silver growth by adsorption on the deposited surface. Pulsed electrodeposition is shown to be an interesting approach to elaborate bumps with smooth and homogeneous surfaces.

  15. Solidification of InSb-GaSb alloy and InSb with vibration

    NASA Technical Reports Server (NTRS)

    Yuan, Weijun

    1992-01-01

    The objective of this project is to determine the influence of vibration on the composition homogeneity and microstructure of alloy semiconductors solidified with the Vertical Bridgman-Stockbarger (VBS) technique. InSb-GaSb and InSb were directionally solidified in a VBS apparatus with axial vibration of the ampoule.

  16. Astrophysical S factor for α capture on Sn117

    NASA Astrophysics Data System (ADS)

    Căta-Danil, I.; Filipescu, D.; Ivaşcu, M.; Bucurescu, D.; Zamfir, N. V.; Glodariu, T.; Stroe, L.; Căta-Danil, G.; GhiţĂ, D. G.; Mihai, C.; Suliman, G.; Sava, T.

    2008-09-01

    The cross sections of the Sn117(α,γ) Te121 and Sn117(α,p) Sb120 reactions have been measured in the effective center of mass energy from 11.5 to 14.6 MeV. Highly enriched self-supporting Sn117 (90%) foils were bombarded with an α beam delivered by the Bucharest IFIN-HH tandem accelerator. The induced activity of Te121 and Sb120 was measured with two large-volume high-purity Ge detectors in close geometry to maximize the detector efficiency. The experimental cross section and astrophysical S factor are compared with statistical model predictions for different global α-nucleus optical potentials.

  17. Realizing the Full Potential of Insertion Anodes for Mg-ion Batteries Through the Nano-Structuring of Sn

    SciTech Connect

    Parent, Lucas R.; Cheng, Yingwen; Sushko, Petr; Shao, Yuyan; Liu, Jun; Wang, Chong M.; Browning, Nigel D.

    2015-02-11

    For next-generation rechargeable batteries, magnesium is of great interest as an alternative to Lithium due to its relative abundance, low toxicity, and bivalent charge (3833 mAh/cm3 and 2205 mAh/g). However, Mg-ion batteries face unique challenges related to the formation of anode passivation layers, anode-electrolyte-cathode incompatibilities, slow solid-state Mg2+ diffusion, and ion trapping. Using analytical (scanning) transmission electron microscopy ((S)TEM) and ab initio modeling, we have investigated Mg2+ intercalation and extraction mechanisms in β-SnSb alloy nanoparticles (NPs). During the first several charge-discharge cycles, the SnSb particles irreversibly break down into a network of pure-Sn and Sb-rich sub-particles, as Mg-ions replace Sn ions in the SnSb lattice. Once the morphology has stabilized, the small Sn NPs (< 20 nm) are responsible for the majority of reversible storage capacity, while the Sb-rich particles trap substitutional-Mg atoms in the lattice and are significantly less active. This result strongly indicates that pure-Sn nanoparticles on a graphene support can act as a high capacity anode for Mg-ion batteries.

  18. Ba-filled Ni–Sb–Sn based skutterudites with anomalously high lattice thermal conductivity

    SciTech Connect

    Paschinger, W.; Rogl, Gerda; Grytsiv, A.; Michor, H.; Heinrich, P. R.; Mueller, H.; Puchegger, S.; Klobes, B.; Hermann, Raphael P.; Reinecker, M.; Eisenmenger-Sitter, Ch.; Broz, P.; Bauer, Ernst; Giester, G.; Zehetbauer, M.; Rogl, Peter F.

    2016-06-21

    Here, in this study, novel filled skutterudites BayNi4Sb12-xSnx (ymax = 0.93) have been prepared by arc melting followed by annealing at 250, 350 and 450°C up to 30 days in vacuum-sealed quartz vials. Extension of the homogeneity region, solidus temperatures and structural investigations were performed for the skutterudite phase in the ternary Ni–Sn–Sb and in the quaternary Ba–Ni–Sb–Sn systems. Phase equilibria in the Ni–Sn–Sb system at 450°C were established by means of Electron Probe Microanalysis (EPMA) and X-ray Powder Diffraction (XPD). With rather small cages Ni4(Sb,Sn)12, the Ba–Ni–Sn–Sb skutterudite system is perfectly suited to study the influence of filler atoms on the phonon thermal conductivity. Single-phase samples with the composition Ni4Sb8.2Sn3.8, Ba0.42Ni4Sb8.2Sn3.8 and Ba0.92Ni4Sb6.7Sn5.3 were used to measure their physical properties, i.e. temperature dependent electrical resistivity, Seebeck coefficient and thermal conductivity. The resistivity data demonstrate a crossover from metallic to semiconducting behaviour. The corresponding gap width was extracted from the maxima in the Seebeck coefficient data as a function of temperature. Single crystal X-ray structure analyses at 100, 200 and 300 K revealed the thermal expansion coefficients as well as Einstein and Debye temperatures for Ba0.73Ni4Sb8.1Sn3.9 and Ba0.95Ni4Sb6.1Sn5.9. These data were in accordance with the Debye temperatures obtained from the specific heat (4.4 K < T < 140 K) and Mössbauer spectroscopy (10 K < T < 290 K). Rather small atom displacement parameters for the Ba filler atoms indicate a severe reduction in the “rattling behaviour” consistent with the high levels of

  19. Facile room temperature ion-exchange synthesis of Sn(2+) incorporated pyrochlore-type oxides and their photocatalytic activities.

    PubMed

    Uma, S; Singh, Jyoti; Thakral, Vaishali

    2009-12-21

    Ion-exchange reactions of aqueous SnCl(2).2H(2)O solutions with oxides such as H(2)Sb(2)O(6).3.0H(2)O, KSbWO(6), and KTaWO(6).1.0H(2)O resulted in novel Sn(2+) incorporated pyrochlore-type oxides under ambient conditions. Characterization of the Sn(2+) exchanged products by powder X-ray diffraction, EDAX, thermogravimetric analysis, and chemical analysis yielded nominal compositions of Sn(0.92)Sb(2)O(6).2.0H(2)O, K(0.59)Sn(0.20)SbWO(6).1.0H(2)O, and K(0.58)Sn(0.29)TaWO(6).1.0H(2)O. Diffuse reflectance spectra of the oxides incorporated with Sn(2+) ions clearly exhibited red shifts from their respective parent oxides. The observed reduction in the band gaps to an extent of 0.9-1.6 eV was consistent with the Sn(2+) ion-exchange, and indicated the upward shifting of the valence band resulting from the contribution of 5s band of Sn(2+) to the O 2p band. Photocatalytic activities of the synthesized pyrochlore oxides were consistent with their electronic properties and decomposed methyl orange (MO) solutions under visible light. The pseudo first order rate constants of the oxides Sn(0.92)Sb(2)O(6).2.0H(2)O and K(0.59)Sn(0.20)SbWO(6).1.0H(2)O for the decomposition of MO solutions were found to be 1.34 h(-1) and 0.217 h(-1), respectively, and almost a negligible MO decomposition was observed for K(0.58)Sn(0.29)TaWO(6).1.0H(2)O. The photocatalytic efficiencies of the oxides were found to be proportional to the rate of formation of .OH radicals, which was found to vary in the order, Sn(0.92)Sb(2)O(6).2.0H(2)O > K(0.59)Sn(0.20)SbWO(6).1.0H(2)O > K(0.58)Sn(0.29)TaWO(6).1.0H(2)O as determined by the photoluminescence spectra using terephthalic acid.

  20. Liquidus projection of the Ag-Ba-Ge system and melting points of clathrate type-I compounds

    SciTech Connect

    Zeiringer, I.; Grytsiv, A.; Broz, P.

    2012-12-15

    The liquidus and solidus projection has been constructed for the Ag-Ba-Ge system up to 33.3 at% Ba, using electron micro probe analysis (EPMA), X-ray powder diffraction (XRD) and differential thermal analysis (DSC/DTA). Eight different primary crystallization regions were found: (Ge), Ba{sub 8}Ag{sub x}Ge{sub 46-x-y}{open_square}{sub y} ({kappa}{sub I}) ({open_square} is a vacancy), Ba{sub 6}Ag{sub x}Ge{sub 25-x} ({kappa}{sub Ix}), BaGe{sub 2}, Ba(Ag{sub 1-x}Ge{sub x}){sub 2} ({tau}{sub 1}), BaAg{sub 2-x}Ge{sub 2+x} ({tau}{sub 2}) BaAg{sub 5} and (Ag). The ternary invariant reactions have been determined for the region investigated and are the basis for a Schulz-Scheil diagram. The second part of this work provides a comprehensive compilation of melting points of ternary A{sub 8}T{sub x}M{sub 46-x} and quaternary (A=Sr, Ba, Eu; T=Ni, Pd, Pt, Cu, Ag, Au, Zn, Cd, B, Al, Ga; M=Si, Ge, Sn) clathrate type-I compounds and decomposition temperatures of inverse clathrate type-I Ge{sub 38}{l_brace}P,As,Sb{r_brace}{sub 8}{l_brace}Cl,Br,I{r_brace}{sub 8}, Si{sub 46-x}P{sub x}Te{sub y} and tin based compounds. - Graphical Abstract: Partial liquidus projection of the Ag-Ba-Ge system. Highlights: Black-Right-Pointing-Pointer The liquidus and solidus projection has been constructed for the Ag-Ba-Ge system up to 33.33 at% Ba. Black-Right-Pointing-Pointer Eight different primary crystallization fields have been found. Black-Right-Pointing-Pointer All the ternary compounds form congruently from the melt. Black-Right-Pointing-Pointer The ternary invariant reactions have been determined and are the basis for a Schulz-Scheil diagram.

  1. Thermoelectric properties of electrically stressed Sb/Bi-Sb-Te multilayered films

    SciTech Connect

    Liao, Chien-Neng; Chang, Chih-Yu; Chu, Hsu-Shen

    2010-03-15

    Electrically stressed Bi-Sb-Te thin films have demonstrated markedly enhanced Hall mobility and moderately reduced carrier concentration. To lower electrical resistivity further, a Sb-inserted Bi-Sb-Te multilayer structure was prepared through consecutively sputtering Bi-Sb-Te and Sb layers followed by electric current stressing. The electrically stressed Sb/Bi-Sb-Te film demonstrates high carrier concentration and enhanced Hall mobility. We propose that the additional Sb supply suppresses electromigration-induced Sb depletion in crystal lattices, thus maintains high carrier concentration of the Bi-Sb-Te film. The presented approach provides a simple means to optimize thermoelectric properties of Bi-Sb-Te films.

  2. Ba-filled Ni–Sb–Sn based skutterudites with anomalously high lattice thermal conductivity

    DOE PAGES

    Paschinger, W.; Rogl, Gerda; Grytsiv, A.; ...

    2016-06-21

    Here, in this study, novel filled skutterudites BayNi4Sb12-xSnx (ymax = 0.93) have been prepared by arc melting followed by annealing at 250, 350 and 450°C up to 30 days in vacuum-sealed quartz vials. Extension of the homogeneity region, solidus temperatures and structural investigations were performed for the skutterudite phase in the ternary Ni–Sn–Sb and in the quaternary Ba–Ni–Sb–Sn systems. Phase equilibria in the Ni–Sn–Sb system at 450°C were established by means of Electron Probe Microanalysis (EPMA) and X-ray Powder Diffraction (XPD). With rather small cages Ni4(Sb,Sn)12, the Ba–Ni–Sn–Sb skutterudite system is perfectly suited to study the influence of filler atomsmore » on the phonon thermal conductivity. Single-phase samples with the composition Ni4Sb8.2Sn3.8, Ba0.42Ni4Sb8.2Sn3.8 and Ba0.92Ni4Sb6.7Sn5.3 were used to measure their physical properties, i.e. temperature dependent electrical resistivity, Seebeck coefficient and thermal conductivity. The resistivity data demonstrate a crossover from metallic to semiconducting behaviour. The corresponding gap width was extracted from the maxima in the Seebeck coefficient data as a function of temperature. Single crystal X-ray structure analyses at 100, 200 and 300 K revealed the thermal expansion coefficients as well as Einstein and Debye temperatures for Ba0.73Ni4Sb8.1Sn3.9 and Ba0.95Ni4Sb6.1Sn5.9. These data were in accordance with the Debye temperatures obtained from the specific heat (4.4 K < T < 140 K) and Mössbauer spectroscopy (10 K < T < 290 K). Rather small atom displacement parameters for the Ba filler atoms indicate a severe reduction in the “rattling behaviour” consistent with the high levels of lattice thermal conductivity. The elastic moduli, collected from Resonant Ultrasonic Spectroscopy ranged from 100 GPa for Ni4Sb8.2Sn3.8 to 116 GPa for Ba0.92Ni4Sb6.7Sn5.3. The thermal expansion coefficients were 11.8 × 10-6 K-1 for Ni4Sb8.2Sn3.8 and 13.8 × 10-6 K-1 for Ba0.92Ni4

  3. Exerimental study of the formation of Sn nanostructures from undercooled droplets as a function of impurity content

    NASA Astrophysics Data System (ADS)

    Parks, Gregory

    The classical theory of nucleation provides a fairly robust description of the nucleation behavior of liquids below their melting point. This model is based upon the assumption that the nucleus that forms in the undercooled liquid has the equilibrium structure, but recent experimental and molecular dynamic simulation results indicate that this view is too simplistic. Thus, a systematic experimental study of the nucleation and growth of Sn nanostructures in undercooled Sn and Sn alloy samples was conducted. Nucleation rates in undercooled Sn were found to monotonically increase with the concentration of impurity atoms (Co, Ni, Cu, or Ag). Results of these studies were applied to improve the reliability of Sn-Ag-Cu solder joints in microelectronic packages. Typical Pb-free solder alloys are composed of over 95% Sn, thus the nucleation and growth of Sn plays a large role in determining the reliability of Pb-free solder joints. The effects of alloy composition, volume, and pad metallization on the isothermal nucleation rate, solidification temperature and, Sn grain morphology of near eutectic Sn-Ag C4 solder bumps were examined. It was found that Sn-2.4Ag alloys on Ni pads have relatively low solidification temperatures. The appearance of a particular Sn grain morphology (interlaced Sn, shown elsewhere to have much higher resistance to electromigration degradation) was strongly correlated with solidification temperature.

  4. Probabilistic distribution coefficients (K(d)s) in freshwater for radioisotopes of Ag, Am, Ba, Be, Ce, Co, Cs, I, Mn, Pu, Ra, Ru, Sb, Sr and Th: implications for uncertainty analysis of models simulating the transport of radionuclides in rivers.

    PubMed

    Ciffroy, P; Durrieu, G; Garnier, J-M

    2009-09-01

    The objective of this study was to provide operational probability density functions (PDFs) for distribution coefficients (K(d)s) in freshwater, representing the partition of radionuclides between the particulate and the dissolved phases respectively. Accordingly, the K(d) variability should be considered in uncertainty analysis of transport and risk assessment models. The construction of PDFs for 8 elements (Ag, Am, Co, Cs, I, Mn, Pu and Sr) was established according to the procedure already tested in Durrieu et al. [2006. A weighted bootstrap method for the determination of probability density functions of freshwater distribution coefficients (K(d)s) of Co, Cs, Sr and I radioisotopes. Chemosphere 65 (8), 1308-1320]: (i) construction of a comprehensive database where K(d)s values obtained under various environments and parametric conditions were collected; (ii) scoring procedure to account for the 'quality' of each datapoint (according to several criteria such as the presentation of data (e.g. raw data vs mean with or without replicates), contact time, pH, solid-to-liquid ratio, expert judgement) in the construction of the PDF; (iii) weighted bootstrapping procedure to build the PDFs, in order to give more importance to the most relevant datapoints. Two types of PDFs were constructed: (i) non-conditional, usable when no knowledge about the site of concern is available; (ii) conditional PDFs corresponding to a limited range of parameters such as pH or contact time; conditional PDFs can thus be used when some parametric information is known on the site under study. For 7 other radionuclides (Ba, Be, Ce, Ra, Ru, Sb and Th), a simplified procedure was adopted because of the scarcity of data: only non-conditional PDFs were built, without incorporating a scoring procedure.

  5. Old friends in a new light: “SnSb” revisited

    NASA Astrophysics Data System (ADS)

    Norén, Lasse; Withers, Ray L.; Schmid, Siegbert; Brink, Frank J.; Ting, Valeska

    2006-02-01

    The binary pnictide 'SnSb' has been re-investigated using a combination of X-ray, synchrotron and electron diffraction as well as electron microprobe analysis. Its structure was found to be incommensurately modulated with an underlying rhombohedral parent structure of space group symmetry R3¯m (No. 166), unit cell parameters a=b=4.3251(4) Å, c=5.3376(6) Å in the hexagonal setting. The incommensurate primary modulation wave vector q=1.3109(9)ch* and the superspace group symmetry is R3¯m (0, 0, ˜1.311) (No. 166.1). The refinement of the incommensurate structure indicates that the satellite reflections arise from displacive shifts of presumably essentially pure Sn and Sb layers along the hexagonal c-axis, with increasing distance between the Sn-layers and decreasing distance between the Sb layers.

  6. Plasmon resonance energy transfer and hot electron injection induced high photocurrent density in liquid junction Ag@Ag2S sensitized solar cells.

    PubMed

    Wu, Dapeng; Wang, Fujuan; Wang, Hongju; Cao, Kun; Gao, Zhiyong; Xu, Fang; Jiang, Kai

    2016-10-18

    An in situ technique was developed to deposit Ag@Ag2S core-shell quantum dots on a SnO2 mesoporous film for solar energy conversion. When adopted as a photoanode, an impressive high photocurrent density of ∼25.6 mA cm(-2) was demonstrated in a cell configuration using polysulfide S(2-)/Sn(2-) as an electrolyte and Cu2S/brass as a counter electrode, which leads to a power conversion efficiency of ∼0.784% for this environmentally benign device. Optical measurements showed that Ag nanoparticles could be employed as plasmon resonance centers to enhance the harvesting efficiency of incident light at the visible and near-infrared range. Moreover, photoluminescence spectra demonstrated fast charge transfer at Ag@Ag2S/SnO2 interfaces, which facilitates direct hot electron injection from sensitizers to the SnO2 matrix and finally gives rise to the high photocurrent density.

  7. Cloning and expression analyses of sucrose non-fermenting-1-related kinase 1 (SnRK1b) gene during development of sorghum and maize endosperm and its implicated role in sugar-to-starch metabolic transition.

    PubMed

    Jain, Mukesh; Li, Qin-Bao; Chourey, Prem S

    2008-09-01

    A full-length cDNA clone, SbSnRK1b (1530 bp, GenBank accession no. EF544393), encoding a putative serine/threonine protein kinase homologue of yeast (Saccharomyces cerevisiae) SNF1, was isolated from developing endosperm of sorghum [Sorghum bicolor (L.) Moench]. Multiple sequence alignment data showed a phylogenetic affiliation of the sorghum clone with the SnRK1b group of protein kinases that are highly expressed in cereal seed endosperm. The DNA gel blot analyses indicated that SbSnRK1b gene is present as a single- or low copy number gene in sorghum. The RNA and protein gel blot analyses confirmed the expression of SbSnRK1b in developing sorghum caryopses, overlapping with the starch biosynthesis phase, 12-24 days after fertilization. In situ hybridization and immunolocalization data resolved the spatial specificity of SbSnRK1b expression in the basal endosperm transfer cell layer, the unique port of assimilate unloading in the growing sorghum seed. Expression of SbSnRK1b was also evident in the developing sorghum microspores, coincident with the onset of starch deposition phase. As in sorghum, similar spatiotemporal specificity of SnRK1b expression was observed during maize (Zea mays L.) seed development. However, discordant in situ hybridization and immunolocalization data indicated that the expression of SbSnRK1b homologue in maize is under posttranscriptional control during endosperm development.

  8. Magnetocaloric effect with low magnetic hysteresis loss in ferromagnetic Ni-Mn-Sb-Si alloys

    NASA Astrophysics Data System (ADS)

    Zhang, Ruochen; Qian, Mingfang; Zhang, Xuexi; Qin, Faxiang; Wei, Longsha; Xing, Dawei; Cui, Xiping; Sun, Jianfei; Geng, Lin; Peng, Huaxin

    2017-04-01

    Giant magnetocaloric effect in Ni-Mn-X (X=In, Sn, Sb) Heusler alloys has been revealed due to the significant shift of the martensite transformation temperatures under a bias magnetic field. However, the magnetic hysteresis during the magnetization and demagnetization cycles creates a large hysteresis loss and reduces the refrigeration capacity. Here we demonstrated that the magnetic hysteresis loss in Ni-Mn-Sb alloys was effectively reduced by Si-doping. The quaternary Ni49.0Mn38.4Sb11.7Si0.9 alloy exhibited martensite and magnetic transitions around room temperature. Maximum magnetic entropy change ΔSm 9.4 J/kg K and working temperature interval 7.0 K were achieved attributed to the martensite transformation under a magnetic field of 5 T. Meanwhile, the average magnetic hysteresis loss for Ni49.0Mn38.4Sb11.7Si0.9 alloy was 2.1 J/kg, much smaller than that for Ni49.0Mn38.5Sb12.5 alloy, 11.4 J/kg. As a result, a refrigeration capacity of 50.2 J/kg was obtained in the Ni49.0Mn38.4Sb11.7Si0.9 alloy. This result shows that Si-doped Ni-Mn-Sb alloys may act as a potential material system for magnetic refrigeration.

  9. Molar and excess volumes of liquid In-Sb, Mg-Sb, and Pb-Sb alloys

    SciTech Connect

    Hansen, A.R.; Kaminski, M.A. ); Eckert, C.A. )

    1990-04-01

    By a direct Archimedes' technique, volumetric data were obtained for liquid In, Mg, Pb, and Sb and mixtures of In-Sb, Mg-Sb, and Pb-Sb. In this paper the excess volumes for the alloys studied are presented and discussed.

  10. Development of Sn-based, low melting temperature Pb-free solder alloys.

    SciTech Connect

    Grant, Richard L.; Vianco, Paul Thomas; Rejent, Jerome Andrew

    2003-09-01

    Low temperature, Sn-based Pb-free solders were developed by making alloy additions to the starting material, 96.5Sn-3.5Ag (mass%). The melting behavior was determined using Differential Scanning Calorimetry (DSC). The solder microstructure was evaluated by optical microscopy and electron probe microanalysis (EPMA). Shear strength measurements, hardness tests, intermetallic compound (IMC) layer growth measurements, and solderability tests were performed on selected alloys. Three promising ternary alloy compositions and respective solidus temperatures were: 91.84Sn-3.33Ag-4.83Bi, 212 C; 87.5Sn-7.5Au-5.0Bi, 200 C; and 86.4Sn-5.1 Ag-8.5Au, 205 C. A quaternary alloy had the composition 86.8Sn-3.2Ag-5.0Bi-5.0Au and solidus temperature of 194 C The shear strength of this quaternary alloy was nearly twice that of the eutectic Sn-Pb solder. The 66Sn-5.0Ag-10Bi-5.0Au-101n-4.0Cu alloy had a solidus temperature of 178 C and good solderability on Cu. The lowest solidus temperature of 159 C was realized with the alloy 62Sn-5.0Ag-10Bi-4.0Au-101n-4.0Cu-5.0Ga. The contributing factor towards the melting point depression was the composition of the solid solution, Sn-based matrix phase of each solder.

  11. Anyon Superconductivity of Sb

    NASA Astrophysics Data System (ADS)

    Maksoed, Wh-; Parengkuan, August

    2016-10-01

    In any permutatives to Pedro P. Kuczhynski from Peru, for anyon superconductivity sought EZ Kuchinskii et al.: ``Anion height dependence of Tc & d.o.s of Fe-based Superconductors'', 2010 as well as ``on the basis of electron microscopy & AFM measurements, these phenomena are quantified with focus on fractal dimension, particle perimeter & size of the side branch(tip width) in bert Stegemann et al.:Crystallization of Sb nanoparticles-Pattern Formation & Fractal Growth'', J.PhysChem B., 2004. For dendritic & dendrimer fractal characters shown further: ``antimony denrites were found to be composed of well-crystallized nanoflakes with size 20-4 nm''- Bou Zhau, et al., MaterialLetters, 59 (2005). The alkyl triisopropyl attached in TIPSb those includes in DNA, haemoglobin membrane/fixed-bed reactor for instance quotes in Dragony Fu, Nature Review Cancer, 12 (Feb 2012). Heartfelt Gratitudes to HE. Mr. Prof. Ir. Handojo.

  12. Interconnection of thermal parameters, microstructure and mechanical properties in directionally solidified Sn–Sb lead-free solder alloys

    SciTech Connect

    Dias, Marcelino; Costa, Thiago; Rocha, Otávio; Spinelli, José E.; Cheung, Noé; Garcia, Amauri

    2015-08-15

    Considerable effort is being made to develop lead-free solders for assembling in environmental-conscious electronics, due to the inherent toxicity of Pb. The search for substitute alloys of Pb–Sn solders has increased in order to comply with different soldering purposes. The solder must not only meet the expected levels of electrical performance but may also have appropriate mechanical strength, with the absence of cracks in the solder joints. The Sn–Sb alloy system has a range of compositions that can be potentially included in the class of high temperature solders. This study aims to establish interrelations of solidification thermal parameters, microstructure and mechanical properties of Sn–Sb alloys (2 wt.%Sb and 5.5 wt.%Sb) samples, which were directionally solidified under cooling rates similar to those of reflow procedures in industrial practice. A complete high-cooling rate cellular growth is shown to be associated with the Sn–2.0 wt.%Sb alloy and a reverse dendrite-to-cell transition is observed for the Sn–5.5 wt.%Sb alloy. Strength and ductility of the Sn–2.0 wt.%Sb alloy are shown not to be affected by the cellular spacing. On the other hand, a considerable variation in these properties is associated with the cellular region of the Sn–5.5 wt.%Sb alloy casting. - Graphical abstract: Display Omitted - Highlights: • The microstructure of the Sn–2 wt.%Sb alloy is characterized by high-cooling rates cells. • Reverse dendrite > cell transition occurs for Sn–5.5 wt.%Sb alloy: cells prevail for cooling rates > 1.2 K/s. • Sn–5.5 wt.%Sb alloy: the dendritic region occurs for cooling rates < 0.9 K/s. • Sn–5.5 wt.%Sb alloy: tensile properties are improved with decreasing cellular spacing.

  13. A p → n transition for Sn-doped Cu(In,Ga)Se2 bulk materials

    NASA Astrophysics Data System (ADS)

    Monsefi, Mehrdad; Kuo, Dong-Hau

    2013-08-01

    Cu(In,Ga)Se2 (CIGSe) pellets at different Sn contents were fabricated by reactive liquid-phase sintering at 600-700 °C with the help of sintering aids of Sb2S3 and Te. Powder preparation was based upon the molecular formula of Cu0.9[(In0.7-xSnxGa0.3)0.9Sb0.1](S0.15Te0.2Se1.65) or Sn-x-CIGSe. Morphology, structure, and electrical property of Sn-doped CIGSe bulks were investigated. The composition of Sn-doped CIGSe is purposely designed for studying the doping effect on the CIGSe performance. The unexpected increase in hole concentration of CIGSe due to the donor doping is rationalized. A controllable n-type semiconductor is deliberately achieved for Sn-0.15-CIGSe and important for making a p/n homojunction in CIGSe solar cells.

  14. Probing the magnetic ground state of single crystalline Ce3TiSb5

    NASA Astrophysics Data System (ADS)

    Matin, M.; Kulkarni, R.; Thamizhavel, A.; Dhar, S. K.; Provino, A.; Manfrinetti, P.

    2017-04-01

    Motivated by the report of superconductivity in R3TiSb5 (R  =  La and Ce) and possibly Nd3TiSb5 at  ∼4 K, we grew single crystals of La3TiSb5 and Ce3TiSb5 by the high-temperature solution method using Sn as a flux. While in both compounds we observed a superconducting transition at 3.7 K for resistivity and low-field magnetization, our data conclusively show that it arose from residual Sn flux present in the single crystals. In particular, the heat capacity data do not present any of the anomalies expected from a bulk superconducting transition. The anisotropic magnetic properties of Ce3TiSb5, crystallizing in a hexagonal P63/mcm structure, were studied in detail. We find that the Ce ions in Ce3TiSb5 form a Kondo lattice and exhibited antiferromagnetic ordering at 5.5 K with a reduced moment and a moderately normalized Sommerfeld coefficient of 598 mJ/mol K2. The characteristic single-ion Kondo energy scale was found to be  ∼8 K. The magnetization data were subjected to a crystal electric field (CEF) analysis. The experimentally observed Schottky peak in the 4f-electron heat capacity of Ce3TiSb5 was reproduced fairly well by the energy levels derived from the CEF analysis.

  15. Phase evolution and electrical properties of Co-Sb alloys fabricated from Co/Sb bilayers by thermal annealing and ion beam mixing.

    PubMed

    Bala, Manju; Pannu, Compesh; Gupta, Srashti; Tripathi, Tripurari S; Tripathi, Surya K; Asokan, K; Avasthi, Devesh K

    2015-10-07

    An investigation was carried out to understand the phase evolution and study the structural, morphological, optical and electrical properties of Co-Sb alloys fabricated by two different approaches: (a) thermal annealing and (b) ion-beam mixing followed by post annealing. The as-deposited and 100 MeV Ag ion beam irradiated Co/Sb bilayer thin films were subjected to thermal annealing from 200 to 400 °C for 1 hour. The Rutherford backscattering spectrometry (RBS) results showed partial mixing for the thermally annealed films and complete mixing for the irradiated and post annealed films at 400 °C. The XRD and RAMAN measurements indicated the formation of Co-Sb alloy, with ∼70% concentration of CoSb3 phase in the irradiated post annealed sample at 400 °C. The band gaps of the annealed and post irradiated annealed Co-Sb alloys were determined using UV-visible spectroscopy. Electrical and thermoelectric power measurements were performed in the temperature range of 300-420 K. It was observed that the alloys formed by ion-beam induced mixing exhibited higher electrical conductivity and thermoelectric power than the as-deposited and thermally annealed Co/Sb bilayer thin films.

  16. A model for the composition modifications in the Cu-Sb-O system

    SciTech Connect

    Stan, M.

    1997-05-01

    THE SN-SB-CU-O SYSTEM HAS BEEN EXTENSIVELY STUDIED BUT SYSTEMATIC PHASE EQUILIBRIUM STUDIES HAVE NOT BEEN APPROACHED. THE SYSTEM CONTAINS USEFUL CERAMICS WITH SPECIFIC ELECTRICAL AND MAGNETIC PROPERTIES, EMPLOYED AS SENSORS, ELECTRODES AND CATALYSTS. AS A PRELIMINARY STEP TO THE PHASE DIAGRAM CALCULATION, THE PAPER AIMS TO PRESENT A MODEL FOR THE COMPOSITION MODIFICATIONS IN THE CU-SB-O SYSTEM, WHICH IS THE MOST COMPLEX OF ALL SUBSYSTEMS. EXOTHERMIC EFFECTS ALONG WITH MASS INCREASES CAN BE OBSERVED IN DTA/GA CURVES, WERE ASSIGNED, FOR ALL SAMPLES, TO SB2O3 AND SB2O4 OXIDATION AND TO CUSB2O6 FORMATION: (1) APPROX. EQUAL 500 DIG C SB2O3 + 1/2 O2 DOUBLE RIGHT ARROW SB2O4; (2) {gt} 750 DIG C SB2O4 + CUO + 1/2 O2 DOUBLE RIGHT ARROW CUSB2O6. FOR THE SAMPLES HAVING CUO IN EXCESS, THE REDUCTION OF CUO TO CUO AND THE FORMATION OF THE CU4SBO4.5 COMPOUND SIMULTANEOUSLY OCCUR: {gt} 950 dig C CUSB2O6 + 7CuO double right arrow (1-r) CUSB2O6+7(1-r)cow+ 2rCu4SbO4.5 + 2rO2 where rEpsilon (0, 1) is the fraction of CUSB2O6 that transforms into Cu4SbO4.5. All the experimental evidences show that the Equations (1), (2) and (3) are good descriptions of the transformations that occurs in the CuO-Sb2O3 system along with the temperature. If the reactions are considered as completed, including a=1 in IQ. (3), then the quantity of oxygen that is gained or lost can be calculated for each sample. It is important to note that Equations (2) and (3) should be carefully solved because of the excess quantities of cow or SB2O4 that can be found in some samples. The calculated values of mass variation are in a good agreement with those obtained from the experimental GT diagrams. The atomic fractions of Cu, Sb and Awe content change in the system and they can be also calculated. The model assumes that at room temperature the compositions lay on the CuO-Sb2O3 line as shown in Fig. 1.

  17. Potential risk assessment in stream sediments, soils and waters after remediation in an abandoned W>Sn mine (NE Portugal).

    PubMed

    Antunes, I M H R; Gomes, M E P; Neiva, A M R; Carvalho, P C S; Santos, A C T

    2016-11-01

    The mining complex of Murçós belongs to the Terras de Cavaleiros Geopark, located in Trás-os-Montes region, northeast Portugal. A stockwork of NW-SE-trending W>Sn quartz veins intruded Silurian metamorphic rocks and a Variscan biotite granite. The mineralized veins contain mainly quartz, cassiterite, wolframite, scheelite, arsenopyrite, pyrite, sphalerite, chalcopyrite, galena, rare pyrrhotite, stannite, native bismuth and also later bismuthinite, matildite, joseite, roosveltite, anglesite, scorodite, zavaritskite and covellite. The exploitation produced 335t of a concentrate with 70% of W and 150t of another concentrate with 70% of Sn between 1948 and 1976. The exploitation took place mainly in four open pit mines as well as underground. Three lakes were left in the area. Remediation processes of confination and control of tailings and rejected materials and phytoremediation with macrophytes from three lakes were carried out between 2005 and 2007. Stream sediments, soils and water samples were collected in 2008 and 2009, after the remediation process. Most stream sediments showed deficiency or minimum enrichment for metals. The sequential enrichment factor in stream sediments W>Bi>As>U>Cd>Sn=Ag>Cu>Sb>Pb>Be>Zn is mainly associated with the W>Sn mineralizations. Stream sediments receiving drainage of a mine dump were found to be significantly to extremely enriched with W, while stream sediments and soils were found to be contaminated with As. Two soil samples collected around mine dumps and an open pit lake were also found to be contaminated with U. The waters from the Murçós W>Sn mine area were acidic to neutral. After the remediation, the surface waters were contaminated with F(-), Al, As, Mn and Ni and must not be used for human consumption, while open pit lake waters must also not be used for agriculture because of contamination with F(-), Al, Mn and Ni. In most waters, the As occurred as As (III), which is toxic and is easily mobilized in the drainage

  18. Antimony isotope study in the Kamo-Ichinokawa river system near the Ichinokawa Sb mine in Southwest Japan

    NASA Astrophysics Data System (ADS)

    Asaoka, S.; Araki, Y.; Tanimizu, M.; Takahashi, Y.

    2009-12-01

    Satoshi ASAOKA*1, Yusuke ARAKI1, Masaharu TANIMIZU2, Yoshio TAKAHASHI1 (1: Grad. Sch. of Earth Planet. Sci., Hiroshima University, Japan; 2: Kochi Core Center, JAMSTEC, Japan) It is possible that Sb isotope can be used to identify ultimate As source in hydrosphere, since (i) Sb isotope can reflect its source (Rouxel et al. 2003) (ii) geochemical behavior of Sb is similar to that of As. Therefore, it is very important to determine the Sb stable isotope ratio in order to reveal geochemical behavior of Sb or As. However, the concentration of Sb in most geological samples is less than 100 ng/g. Although Sb has two stable isotopes (121 and 123), its mass differences is only 1.6%. Thiol Cotton Fiber (TCF) is effective for preconcentration and separation of Sb. The purposes of this study are to develop a Sb preconcentration method using modified TCF and investigate Sb behavior in an abandoned Sb mine, Ichinokawa Mine and their river basin in Japan based on the Sb isotope data. TCF was prepared on the basis of Yu et al. (1983). After the TCF was packed with a mini column (3.5 cm h, 7 mm i.d.), the TCF was conditioned by introducing sequentially 25 mL of MQ and 25 mL of 0.5M-HCl. The Sb in a sample with 0.5 M-HCl was reduced to Sb(III) by adding 10%-KI- ascorbic acid mixed solution to be 0.5% of final concentration for 3 h. Thereafter, the sample was passed through the column packed with TCF at 100 mL/h. After the column was rinsed with 5 mL of 2N-HCl, the Sb fraction was collected by passing 8mL of 6M-HCl through the column. The H2O2 (final concentration is 3.5 w/w%) was added to the aliquot of Sb fraction and dried up at 95oC. The concentration of antimony was determined using quadropole ICP-MS and Sb isotope was analyzed by multicollector ICP-MS (Neptune) coupled with external correction method using Sn isotopes. The concentration of Sb in upstream of Ichinokura river is 3 orders higher than that of Kamo river flowing uncontaminated basin. Antimony isotope ratio of

  19. Textures, trace elements, and Pb isotopes of sulfides from the Haopinggou vein deposit, southern North China Craton: implications for discrete Au and Ag-Pb-Zn mineralization

    NASA Astrophysics Data System (ADS)

    Li, Zhan-Ke; Li, Jian-Wei; Cooke, David R.; Danyushevsky, Leonid; Zhang, Lejun; O'Brien, Hugh; Lahaye, Yann; Zhang, Wen; Xu, Hai-Jun

    2016-12-01

    The Haopinggou deposit in the Xiong'ershan district, southern margin of the North China Craton, comprises numerous Au and Ag-Pb-Zn veins hosted in metamorphic rocks of the Late Archean to early Paleoproterozoic Taihua Group. Two stages of mineralization have been recognized: Stage 1 pyrite-quartz veins and Stage 2 Pb-Zn-sulfide veins. Some pyrite-quartz veins are surrounded or cut by Pb-Zn-sulfide veins, others occur as independent veins. Six generations of pyrite have been identified at Haopinggou: Py1 to Py3 in Stage 1 and Py4 to Py6 in Stage 2. Pyrites from Stage 1 are enriched in Au, As, Co, Ni, and Bi, whereas Stage 2 pyrites contain higher Ag, Pb, Zn, Sn, and Sb. Invisible Au mostly occurs as lattice-bound gold in Py2 (up to 92 ppm Au) and Py3 (up to 127 ppm Au) and has a close relationship with As. Native Au grains are also present in Py3 and likely resulted from mobilization and reprecipitation of the invisible Au previously locked in the precursor pyrite. This view is supported by extensive plastic deformation in Stage 1 pyrite as revealed by electron backscatter diffraction analysis. In Stage 2, Ag is mostly present as lattice-bound silver closely associated with Sb in galena (up to 798 ppm Ag). A variety of silver minerals are also present as inclusions within galena or as interstitial grains. These silver minerals were likely formed via Ag-Cu exchange reaction between tetrahedrite and galena or represent exsolution from galena due to a temperature decrease. Pb isotopic compositions differ remarkably between Stage 1 and Stage 2 sulfides, indicating different sources of lead. Pb in Stage 2 Pb-Zn-sulfide veins is consistent with the Haopinggou porphyry close to the veins. The field, textural, compositional, and lead isotopic data led us to conclude that the early gold-bearing pyrite-quartz veins and late silver-bearing Pb-Zn-sulfide veins likely formed from distinct fluid systems related to discrete mineralization events. Our study suggests that Au and Ag

  20. On squaring triangles – Structural motifs in Cu–In–Sb compounds

    SciTech Connect

    Müller, C.J. Lidin, S.

    2015-11-15

    Two new ternary Cu–In–Sb compounds Cu{sub 7}In{sub 2.5}Sb{sub 0.5} and Cu{sub 2}In{sub 0.75}Sb{sub 0.25} are presented. Both compounds are Ni{sub 2}In type superstructures with vacancies in the pseudohexagonal network. Additionally, the pseudocubic nature of the compounds and Ni{sub 2}In type (super)structures, in general, is discussed. Remarkably, a large number of pseudo-five-fold and pseudo-three-fold axes contribute to generate a pseudocubic symmetry in the crystal structure that is reflected in pseudocubic axial ratios in Ni{sub 2}In type superstructures. We find that they belong to the family of tetrahedrally close packed structures which implies that pseudocubic axial relationships simply are to be expected. - Graphical abstract: Evolution of pseudocubic clusters in Sb-doped Cu{sub 7}In{sub 3} and the Cu–In–Sb 2:1 phase. - Highlights: • Two new ternary compounds Cu{sub 7}In{sub 2.5}Sb{sub 0.5} and Cu{sub 2}In{sub 0.75}Sn{sub 0.25}. • First ternary Ni{sub 2}In superstructures with vacancies in the pseudohexagonal network. • Pseudocubic clusters in the pseudohexagonal structures. • Pseudocubic c/a ratios due to the relation to tetrahedrally close packed structures.

  1. Synergetic effect of Zn substitution on the electron and phonon transport in Mg2Si0.5Sn0.5-based thermoelectric materials.

    PubMed

    Gao, Hongli; Zhu, Tiejun; Zhao, Xinbing; Deng, Yuan

    2014-10-07

    Mg2Si1-xSnx alloys are a prospecti