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Sample records for ag sn sb

  1. Martensitic transformation behavior in Ti–Ni–X (Ag, In, Sn, Sb, Te, Tl, Pb, Bi) ternary alloys

    SciTech Connect

    Jang, Jai-young; Chun, Su-jin; Kim, Nam-suk; Cho, Jeung-won; Kim, Jae-hyun; Yeom, Jong-taek; Kim, Jae-il; Nam, Tae-hyun

    2013-12-15

    Graphical abstract: - Highlights: • Ag, In and Sn were soluble in TiNi matrix, while Sb, Te, Tl, Pb and Bi were not. • The B2-R-B19′transformation occurred in Ti-Ni-(Ag, In, Sn) alloys. • Solid solution hardening was essential for inducing the B2-R transformation. - Abstract: The microstructures and transformation behaviors of Ti–Ni–X (Ag, In, Sn, Sb, Te, Tl, Pb, Bi) ternary alloys were investigated using electron probe micro-analysis (EPMA), X-ray diffraction (XRD), differential scanning calorimetry (DSC) and Micro Vickers hardness tests. All specimens consisted of Ti–Ni matrices and second phase particles. Ag, In and Sn were soluble in Ti–Ni matrices with a limited solubility (≤1.0 at%), while Sb, Te, Tl, Pb and Bi were not soluble. Two-stage B2-R-B19′ transformation occurred in Ti–48.8Ni–1.2Ag, Ti–49.0Ni–1.0In and Ti–49.0Ni–1.0Sn alloys, while one-stage B2-B19′ transformation occurred in Ti–49.0Ni–1.0Ag, Ti–49.0Ni–1.0Sb, Ti–49.0Ni–1.0Te, Ti–49.0Ni–1.0Pb and Ti–49.0Ni–1.0Bi alloys. Micro Vickers hardness of the alloys displaying the B2-R-B19′ transformation (Hv 250–368) was much larger than that (

  2. Effect of Zn and Sb Additions on the Impression Creep Behavior of Lead-Free Sn-3.5Ag Solder Alloy

    NASA Astrophysics Data System (ADS)

    Pourmajidian, M.; Mahmudi, R.; Geranmayeh, A. R.; Hashemizadeh, S.; Gorgannejad, S.

    2016-01-01

    The effect of separate additions of 1.5 wt.% Zn and 1.5 wt.% Sb on the creep behavior of Sn-3.5 wt.% Ag lead-free solder alloy was investigated by impression testing. The tests were carried out under constant punching stresses in the range of 60-120 MPa and at temperatures in the range of 298-370 K. Both of the ternary alloys showed creep resistances higher than that of the eutectic binary Sn-3.5Ag alloy. The superior creep resistance of the ternary Sn-3.5Ag-1.5Sb alloy is attributed to the strong solid solutioning effect of antimony in the tin matrix, while the formation of AgZn particles and refinement of the Ag3Sn precipitates account for the higher creep resistance of the Sn-3.5Ag-1.5Zn alloy. The average stress exponents of 8.2, 8.5, and 8.6 and activation energies of 47.4 kJ mol-1, 45.3 kJ mol-1, , and 43.3 kJ mol-1 were obtained for Sn-3.5Ag, Sn-3.5Ag-1.5Zn, and Sn-3.5Ag-1.5Sb, respectively. These activation energies are close to 46 kJ mol-1 for dislocation pipe diffusion of tin. This, together with the stress exponents of 8.2-8.6, suggests that dislocation climb controlled by dislocation pipe diffusion is the predominant creep mechanism in these alloys.

  3. Data on metal contents (As, Ag, Sr, Sn, Sb, and Mo) in sediments and shells of Trachycardium lacunosum in the northern part of the Persian Gulf.

    PubMed

    Karbasdehi, Vahid Noroozi; Dobaradaran, Sina; Nabipour, Iraj; Arfaeinia, Hossein; Mirahmadi, Roghayeh; Keshtkar, Mozhgan

    2016-09-01

    In this data article, by using inductively coupled plasma optical spectrometry (ICP-OES), we aimed to (1) determine the concentration levels of As, Ag, Sr, Sn, Sb, and Mo in the sediments and the shells of Trachycardium lacunosum simultaneously in two separated areas (unpolluted and polluted areas) (2) comparison between the metal contents of sediments in the unpolluted and polluted areas as well as shells. Analysis of data showed that sediment as well as shell samples in polluted area contained significantly higher concentration levels of all measured metals compared with unpolluted area. PMID:27508251

  4. Effects of temperature, silicate melt composition, and oxygen fugacity on the partitioning of V, Mn, Co, Ni, Cu, Zn, As, Mo, Ag, Sn, Sb, W, Au, Pb, and Bi between sulfide phases and silicate melt

    NASA Astrophysics Data System (ADS)

    Li, Yuan; Audétat, Andreas

    2015-08-01

    In order to assess the role of sulfide in controlling the ore metal budgets and fractionation during magmatic genesis and differentiation, the partition coefficients (D) of V, Mn, Co, Ni, Cu, Zn, As, Mo, Ag, Sn, Sb, W, Au, Pb, and Bi between sulfide liquid (SL), monosulfide solid solution (MSS), and basaltic to rhyolitic melts (SM) were determined at 900-1200 °C, 0.5-1.5 GPa, and oxygen fugacity (fO2) ranging from ∼FMQ-2 to FMQ+3, in a piston-cylinder apparatus. The DSL/SM values range from 0.4 to 2 for V, 0.5 to 3 for Mn, 80 to 580 for Co, 2300 to 18,000 for Ni, 800 to 4600 for Cu, 1 to 11 for Zn, 20 to 180 for As, 4 to 230 for Mo, 450 to 1600 for Ag, 5 to 24 for Sn, 10 to 80 for Sb, 0.03 to 0.16 for W, 2000 to 29,000 for Au, 24 to 170 for Pb, and 830 to 11,000 for Bi; whereas the DMSS/SM values range from 0.04 to 10 for V, 0.5 to 10 for Mn, 70 to 2500 for Co, 650 to 18,000 for Ni, 280 to 42,000 for Cu, 0.1 to 80 for Zn, 0.2 to 30 for As, 1 to 820 for Mo, 20 to 500 for Ag, 0.2 to 220 for Sn, 0.1 to 40 for Sb, 0.01 to 24 for W, 10 to 2000 for Au, 0.03 to 6 for Pb, and 1 to 350 for Bi. Both DMSS/SM and DSL/SM values generally increase with decreasing temperature or decreasing FeOtot content in silicate melt, except for Mo, DMSS/SM and DSL/SM of which show a clear decrease with decreasing temperature. At given temperature and FeOtot content, high oxygen fugacity appears to lead to a significant decrease in DMSS/SM of Au, Bi, Mo, and potentially As. The partitioning data obtained experimentally in this study and previous studies were fitted to an empirical equation that expresses the DMSS/SM and/or DSL/SM of a given element as a function of temperature, oxygen fugacity, and FeOtot content of the silicate melt: log (DSL/SMorDMSS/SM = d + a · 10, 000 / T + b · (ΔFMQ) + c · log (FeOmelt) in which T is temperature in K, FeOmelt denotes wt% FeOtot in silicate melt, and ΔFMQ denotes log fO2 relative to the fayalite-magnetite-quartz (FMQ) oxygen buffer. The

  5. Partitioning of V, Mn, Co, Ni, Cu, Zn, As, Mo, Ag, Sn, Sb, W, Au, Pb, and Bi between sulfide phases and hydrous basanite melt at upper mantle conditions

    NASA Astrophysics Data System (ADS)

    Li, Yuan; Audétat, Andreas

    2012-11-01

    The partitioning of 15 major to trace metals between monosulfide solid solution (MSS), sulfide liquid (SL) and mafic silicate melt (SM) was determined in piston-cylinder experiments performed at 1175-1300 °C, 1.5-3.0 GPa and oxygen fugacities ranging from 3.1 log units below to 1.0 log units above the quartz-fayalite-magnetite fO2 buffer, which conditions are representative of partial melting in the upper mantle in different tectonic settings. The silicate melt was produced by partial melting of a natural, amphibole-rich mantle source rock, resulting in hydrous (˜5 wt% H2O) basanitic melts similar to low-degree partial melts of metasomatized mantle, whereas the major element composition of the starting sulfide (˜52 wt% Fe; 39 wt% S; 7 wt% Ni; 2 wt% Cu) was similar to the average composition of sulfides in this environment. SL/SM partition coefficients are high (≥100) for Au, Ni, Cu, Ag, Bi, intermediate (1-100) for Co, Pb, Sn, Sb (±As, Mo), and low (≤1) for the remaining elements. MSS/SM partition coefficients are generally lower than SL/SM partition coefficients and are high (≥100) for Ni, Cu, Au, intermediate (1-100) for Co, Ag (±Bi, Mo), and low (≤1) for the remaining elements. Most sulfide-silicate melt partition coefficients vary as a function of fO2, with Mo, Bi, As (±W) varying by a factor >10 over the investigated fO2 range, Sb, Ag, Sn (±V) varying by a factor of 3-10, and Pb, Cu, Ni, Co, Au, Zn, Mn varying by a factor of 3-10. The partitioning data were used to model the behavior of Cu, Au, Ag, and Bi during partial melting of upper mantle and during fractional crystallization of primitive MORB and arc magmas. Sulfide phase relationships and comparison of the modeling results with reported Cu, Au, Ag, and Bi concentrations from MORB and arc magmas suggest that: (i) MSS is the dominant sulfide in the source region of arc magmas, and thus that Au/Cu ratios in the silicate melt and residual sulfides may decrease with increasing degree of

  6. Pirquitasite, Ag2ZnSnS4

    PubMed Central

    Schumer, Benjamin N.; Downs, Robert T.; Domanik, Kenneth J.; Andrade, Marcelo B; Origlieri, Marcus J.

    2013-01-01

    Pirquitasite, ideally Ag2ZnSnS4 (disilver zinc tin tetra­sulfide), exhibits tetra­gonal symmetry and is a member of the stannite group that has the general formula A2BCX 4, with A = Ag, Cu; B = Zn, Cd, Fe, Cu, Hg; C = Sn, Ge, Sb, As; and X = S, Se. In this study, single-crystal X-ray diffraction data are used to determine the structure of pirquitasite from a twinned crystal from the type locality, the Pirquitas deposit, Jujuy Province, Argentina, with anisotropic displacement parameters for all atoms, and a measured composition of (Ag1.87Cu0.13)(Zn0.61Fe0.36Cd0.03)SnS4. One Ag atom is located on Wyckoff site Wyckoff 2a (symmetry -4..), the other Ag atom is statistically disordered with minor amounts of Cu and is located on 2c (-4..), the (Zn, Fe, Cd) site on 2d (-4..), Sn on 2b (-4..), and S on general site 8g. This is the first determination of the crystal structure of pirquitasite, and our data indicate that the space group of pirquitasite is I-4, rather than I-42m as previously suggested. The structure was refined under consideration of twinning by inversion [twin ratio of the components 0.91 (6):0.09 (6)]. PMID:23424398

  7. Thermodynamic Description of the Ternary Sb-Sn-Zn System

    NASA Astrophysics Data System (ADS)

    Gierlotka, Wojciech

    2016-04-01

    The ternary Sb-Sn-Zn system is important for two reasons: the first one is that antimony-tin-zinc alloys are promising lead-free solders, the second one is, that zinc antimonides show thermoelectric properties. Based on available literature information, the Sb-Sn-Zn system was thermodynamically described using the Calphad approach. A good agreement between calculation and experimental information was found.

  8. Phase equilibria, formation, crystal and electronic structure of ternary compounds in Ti-Ni-Sn and Ti-Ni-Sb ternary systems

    SciTech Connect

    Romaka, V.V.; Rogl, P.; Romaka, L.; Stadnyk, Yu.; Melnychenko, N.; Grytsiv, A.; Falmbigl, M.; Skryabina, N.

    2013-01-15

    The phase equilibria of the Ti-Ni-Sn and Ti-Ni-Sb ternary systems have been studied in the whole concentration range by means of X-ray and EPM analyses at 1073 K and 873 K, respectively. Four ternary intermetallic compounds TiNiSn (MgAgAs-type), TiNi{sub 2-x}Sn (MnCu{sub 2}Al-type), Ti{sub 2}Ni{sub 2}Sn (U{sub 2}Pt{sub 2}Sn-type), and Ti{sub 5}NiSn{sub 3} (Hf{sub 5}CuSn{sub 3}-type) are formed in Ti-Ni-Sn system at 1073 K. The TiNi{sub 2}Sn stannide is characterized by homogeneity in the range of 50-47 at% of Ni. The Ti-Ni-Sb ternary system at 873 K is characterized by formation of three ternary intermetallic compounds, Ti{sub 0.8}NiSb (MgAgAs-type), Ti{sub 5}Ni{sub 0.45}Sb{sub 2.55} (W{sub 5}Si{sub 3}-type), and Ti{sub 5}NiSb{sub 3} (Hf{sub 5}CuSn{sub 3}-type). The solubility of Ni in Ti{sub 0.8}NiSb decreases number of vacancies in Ti site up to Ti{sub 0.91}Ni{sub 1.1}Sb composition. - Graphical abstract: Isothermal section of the Ti-Ni-Sn phase diagram and DOS distribution in hypothetical TiNi{sub 1+x}Sn solid solution. Highlights: Black-Right-Pointing-Pointer Ti-Ni-Sn phase diagram was constructed at 1073 K. Black-Right-Pointing-Pointer Four ternary compounds are formed: TiNiSn, TiNi{sub 2-x}Sn, Ti{sub 2}Ni{sub 2}Sn, and Ti{sub 5}NiSn{sub 3}. Black-Right-Pointing-Pointer Three ternary compounds exist in Ti-Ni-Sb system at 873 K. Black-Right-Pointing-Pointer The TiNi{sub 2}Sb compound is absent.

  9. The reaction mechanism of SnSb and Sb thin film anodes for Na-ion batteries studied by X-ray diffraction, 119Sn and 121Sb Mössbauer spectroscopies

    DOE PAGES

    Baggetto, Loïc; Hah, Hien-Yoong; Jumas, Jean-Claude; Johnson, Charles E.; Johnson, Jacqueline A.; Keum, Jong K.; Bridges, Craig A.; Veith, Gabriel M.

    2014-06-01

    The electrochemical reaction of Sb and SnSb anode materials with Na results in the formation of amorphous materials. To understand the resulting phases and electrochemical capacities we studied the reaction products local order using 119Sn and 121Sb Mössbauer spectroscopies in conjunction with measurements performed on model powder compounds of Na-Sn and Na-Sb to further clarify the reactions steps. For pure Sb the discharge (sodiation) starts with the formation of an amorphous phase composed of atomic environments similar to those found in NaSb, and proceeds further by the formation of environments similar to that present in Na3Sb. The reversible reaction takesmore » place during a large portion of the charge process. At full charge the anode material still contains a substantial fraction of Na, which explains the lack of recrystallization into crystalline Sb. The reaction of SnSb yields Na3Sb crystalline phase at full discharge at higher temperatures (65 and 95°C) while the room temperature reaction yields amorphous compounds. The electrochemically-driven, solid-state amorphization reaction occurring at room temperature is governed by the simultaneous formation of Na-coordinated Sn and Sb environments, as monitored by the decrease (increase) of the 119Sn (121Sb) Mössbauer isomer shifts. Overall, the monitoring of the hyperfine parameters enables to correlate the changes in Na content to the individual Sn and Sb local chemical environments.« less

  10. Electrochemical studies of CNT/Si–SnSb nanoparticles for lithium ion batteries

    SciTech Connect

    Nithyadharseni, P.; Reddy, M.V.; Nalini, B.; Ravindran, T.R.; Pillai, B.C.; Kalpana, M.; Chowdari, B.V.R.

    2015-10-15

    Highlights: • Si added SnSb and CNT exhibits very low particle size of below 30 nm • A strong PL quenching due to the addition of Si to SnSb. • Electrochemical studies show CNT added SnSb shows good capacity retention. - Abstract: Nano-structured SnSb, SnSb–CNT, Si–SnSb and Si–SnSb–CNT alloys were synthesized from metal chlorides of Sn, Sb and Si via reductive co-precipitation technique using NaBH{sub 4} as reducing agent. The as prepared compounds were characterized by various techniques such as X-ray diffraction (XRD), scanning electron microscope (SEM), Raman, Fourier transform infra-red (FTIR) and photoluminescence (PL) spectroscopy. The electrochemical performances of the compounds were characterized by galvanostatic cycling (GC) and cyclic voltammetry (CV). The Si–SnSb–CNT compound shows a high reversible capacity of 1200 mAh g{sup −1}. However, the rapid capacity fading was observed during cycling. In contrast, SnSb–CNT compound showed a high reversible capacity of 568 mAh g{sup −1} at 30th cycles with good cycling stability. The improved reversible capacity and cyclic performance of the SnSb–CNT compound could be attributed to the nanosacle dimension of SnSb particles and the structural advantage of CNTs.

  11. Formation mechanism of primary phases and eutectic structures within undercooled Pb-Sb-Sn ternary alloys

    NASA Astrophysics Data System (ADS)

    Wang, Weili; Dai, Fuping; Wei, Bingbo

    2007-08-01

    The solidification characteristics of three types of Pb-Sb-Sn ternary alloys with different primary phases were studied under substantial undercooling conditions. The experimental results show that primary (Pb) and SbSn phases grow in the dendritic mode, whereas primary (Sb) phase exhibits faceted growth in the form of polygonal blocks and long strips. (Pb) solid solution phase displays strong affinity with SbSn intermetallic compound so that they produce various morphologies of pseudobinary eutectics, but it can only grow in the divorced eutectic mode together with (Sb) phase. Although (Sb) solid solution phase and SbSn intermetallic compound may grow cooperatively within ternary eutectic microstructures, they seldom form pseudobinary eutectics independently. The (Pb)+(Sb)+SbSn ternary eutectic structure usually shows lamellar morphology, but appears as anomalous eutectic when its volume fraction becomes small. EDS analyses reveal that all of the three primary (Pb), (Sb) and SbSn phases exhibit conspicuous solute trapping effect during rapid solidification, which results in the remarkable extension of solute solubility.

  12. Electrical and magnetic effect of transition metals in SnSb nanoalloy

    NASA Astrophysics Data System (ADS)

    Nithyadharseni, P.; Nalini, B.; Saravanan, P.

    2014-08-01

    Influence of incorporating transition metal impurities such as Fe, Co and Ni on the magnetic and electrical properties of SnSb alloy nanopowders synthesized by reductive co-precipitation is reported. Structural elucidation of all the samples by X-ray diffraction (XRD) confirms hexagonal structure and the morphological observations through scanning electron microscope (SEM) show a minimal particle size of 20 nm for the Co substituted SnSb sample, among all the other impurity incorporated samples. Compositional confirmation of Sn, Sb, Fe, Co, and Ni was made using EDAX. The X-ray photoelectron spectroscopy (XPS) is used to investigate the surface of SnSb and the change in surface activity due to the addition of transition metal impurities. The magnetic hysteresis studies indicate that SnSb and SnSb:Ni exhibit diamagnetic behaviour; while the Fe and Co incorporation resulted in ferromagnetic nature. The conductivity of SnSb:Fe, SnSb:Ni shows a semiconducting nature with negative temperature coefficient of resistance; whereas pure and Co substitution exhibit metallic behaviour with positive temperature coefficient of resistance. The switching of metallic to semiconducting regime is explained in this paper. Also an attempt has been made to correlate electrical and magnetic properties with the surface oxidation effect through XPS data.

  13. Influence of Dopant on Growth of Intermetallic Layers in Sn-Ag-Cu Solder Joints

    NASA Astrophysics Data System (ADS)

    Li, G. Y.; Bi, X. D.; Chen, Q.; Shi, X. Q.

    2011-02-01

    The interfacial interaction between Cu substrates and Sn-3.5Ag-0.7Cu- xSb ( x = 0, 0.2, 0.5, 0.8, 1.0, 1.5, and 2.0) solder alloys has been investigated under different isothermal aging temperatures of 100°C, 150°C, and 190°C. Scanning electron microscopy (SEM) was used to measure the thickness of the intermetallic compound (IMC) layer and observe the microstructural evolution of the solder joints. The IMC phases were identified by energy-dispersive x-ray spectroscopy (EDX) and x-ray diffractometry (XRD). The growth of both the Cu6Sn5 and Cu3Sn IMC layers at the interface between the Cu substrate and the solder fits a power-law relationship with the exponent ranging from 0.42 to 0.83, which suggests that the IMC growth is primarily controlled by diffusion but may also be influenced by interface reactions. The activation energies and interdiffusion coefficients of the IMC formation of seven solder alloys were determined. The addition of Sb has a strong influence on the growth of the Cu6Sn5 layer, but very little influence on the formation of the Cu3Sn IMC phase. The thickness of the Cu3Sn layer rapidly increases with aging time and temperature, whereas the thickness of the Cu6Sn5 layer increases slowly. This is probably due to the formation of Cu3Sn at the interface between two IMC phases, which occurs with consumption of Cu6Sn5. Adding antimony to Sn-3.5Ag-0.7Cu solder can evidently increase the activation energy of Cu6Sn5 IMC formation, reduce the atomic diffusion rate, and thus inhibit excessive growth of Cu6Sn5 IMCs. This study suggests that grain boundary pinning is one of the most important mechanisms for inhibiting the growth of Cu6Sn5 IMCs in such solder joints when Sb is added.

  14. On possibility of superconductivity in SnSb: A first principle study

    NASA Astrophysics Data System (ADS)

    Dabhi, Shweta D.; Shrivastava, Deepika; Jha, Prafulla K.; Sanyal, Sankar P.

    2016-09-01

    The electronic, phonon structure and superconducting properties of tin antimonide (SnSb) in rock-salt (RS) structure are calculated using first-principles density functional theory. The electronic band structure and density of states show metallic behavior. The phonon frequencies are positive throughout the Brillouin zone in rock-salt structure indicating its stability in that phase. Superconductivity of SnSb in RS phase is discussed in detail by calculating phonon linewidths, Eliashberg spectral function, electron-phonon coupling constant and superconducting transition temperature. SnSb is found to have a slightly lower TC (3.1 K), as compared to SnAs.

  15. Fabrication of Sn-3.5Ag Eutectic Alloy Powder by Annealing Sub-Micrometer Sn@Ag Powder Prepared by Citric Acid-Assisted Ag Immersion Plating.

    PubMed

    Chee, Sang-Soo; Choi, Eun Byeol; Lee, Jong-Hyun

    2015-11-01

    A Sn-3.5Ag eutectic alloy powder has been developed by chemically synthesizing sub-micrometer Sn@Ag powder at room temperature. This synthesis was achieved by first obtaining a sub-micrometer Sn powder for the core using a modified variant of the polyol method, and then coating this with a uniformly thin and continuous Ag layer through immersion plating in 5.20 mM citric acid. The citric acid was found to play multiple roles in the Ag coating process, acting as a chelating agent, a reducing agent and a stabilizer to ensure coating uniformity; and as such, the amount used has an immense influence on the coating quality of the Ag shells. It was later verified by transmission electron microscopy and X-ray diffraction analysis that the coated Ag layer transfers to the Sn core via diffusion to form an Ag3Sn phase at room temperature. Differential scanning calorimetry also revealed that the synthesized Sn@Ag powder is nearly transformed into Sn-3.5Ag eutectic alloy powder upon annealing three times at a temperature of up to 250 degrees C, as evidenced by a single melting peak at 220.5 degrees C. It was inferred from this that Sn-3.5Ag eutectic alloy powder can be successfully prepared through the synthesis of core Sn powders by a modified polyol method, immersion plating using citric acid, and annealing, in that order.

  16. Viscoelastic behavior over a wide range of time and frequency in tin alloys: SnCd and SnSb

    SciTech Connect

    Quackenbush, J.; Brodt, M.; Lakes, R.S.

    1996-08-01

    All materials exhibit some viscoelastic response, which can manifest itself as creep, relaxation, or, if the load is sinusoidal in time, a phase angle {delta} between stress and strain. Recently, a study of pure elements with low melting points, Cd, In, Pb, and Sn disclosed that cadmium exhibited a substantial loss tangent of 0.03 to 0.04 over much of the audio range of frequencies, combined with a moderate stiffness G = 20.7 GPa. Lead, by contrast, exhibited tan {delta} of 0.005 to 0.016 in the audio range. Indium exhibited a high loss tangent exceeding 0.1 at very low frequency. A eutectic alloy of indium and tin was found to exhibit substantial damping exceeding 0.1 below 0.1 Hz, and this alloy was used to make a composite exhibiting high stiffness and high damping. It is the purpose of this communication to present viscoelastic properties of two additional low melting point alloys, SnCd and SnSb. Both InSn and SnSb are used as solders. Although the melting point of Sb is 630.74 C, T{sub H} > 0.55 at ambient temperature for the alloy of SnSb (95 wt% Sn/5 wt% Sb) which melts near 240 C. Eutectic SnCd melts at 177 C so T{sub H} {approx} 0.65 at room temperature.

  17. Rapid solidification mechanism of highly undercooled ternary Cu40Sn45Sb15 alloy

    NASA Astrophysics Data System (ADS)

    Zhai, W.; Wang, B. J.; Lu, X. Y.; Wei, B.

    2015-10-01

    The rapid solidification of ternary Cu40Sn45Sb15 peri-eutectic type alloy was realized by glass fluxing and drop tube methods, and the corresponding maximum undercoolings are 185 K (0.22 T L) and 321 K (0.39 T L), respectively. The phase constitution of Cu40Sn45Sb15 alloy in these two rapid solidification experiments deviates from the two equilibrium phases (Sn + Cu6Sn5). In glass fluxing method, the structural morphology of Cu40Sn45Sb15 alloy is mainly characterized by a three-layer lamellar structure, which is comprised by an inner layer of long strips of primary ɛ(Cu3Sn) phase, an intermediate layer of η(Cu6Sn5) phase and an outer layer of β(SnSb) phase. As undercooling rises, this lamellar structure is remarkably refined. When small alloy droplets are containerlessly solidified during free fall in drop tube, the primary ɛ(Cu3Sn) phase grows by non-faceted mode into dendrites as droplet diameter decreases. Especially, solidification path alters in the smallest droplet with 50 μm diameter, in which η(Cu6Sn5) and Sn3Sb2 phases form directly from the metastable liquid phase by suppressing the primary ɛ phase formation and the following peri-eutectic transformation.

  18. The reaction mechanism of SnSb and Sb thin film anodes for Na-ion batteries studied by X-ray diffraction, 119Sn and 121Sb Mössbauer spectroscopies

    SciTech Connect

    Baggetto, Loïc; Hah, Hien-Yoong; Jumas, Jean-Claude; Johnson, Charles E.; Johnson, Jacqueline A.; Keum, Jong K.; Bridges, Craig A.; Veith, Gabriel M.

    2014-06-01

    The electrochemical reaction of Sb and SnSb anode materials with Na results in the formation of amorphous materials. To understand the resulting phases and electrochemical capacities we studied the reaction products local order using 119Sn and 121Sb Mössbauer spectroscopies in conjunction with measurements performed on model powder compounds of Na-Sn and Na-Sb to further clarify the reactions steps. For pure Sb the discharge (sodiation) starts with the formation of an amorphous phase composed of atomic environments similar to those found in NaSb, and proceeds further by the formation of environments similar to that present in Na3Sb. The reversible reaction takes place during a large portion of the charge process. At full charge the anode material still contains a substantial fraction of Na, which explains the lack of recrystallization into crystalline Sb. The reaction of SnSb yields Na3Sb crystalline phase at full discharge at higher temperatures (65 and 95°C) while the room temperature reaction yields amorphous compounds. The electrochemically-driven, solid-state amorphization reaction occurring at room temperature is governed by the simultaneous formation of Na-coordinated Sn and Sb environments, as monitored by the decrease (increase) of the 119Sn (121Sb) Mössbauer isomer shifts. Overall, the monitoring of the hyperfine parameters enables to correlate the changes in Na content to the individual Sn and Sb local chemical environments.

  19. Ba-filled Ni-Sb-Sn based skutterudites with anomalously high lattice thermal conductivity.

    PubMed

    Paschinger, W; Rogl, G; Grytsiv, A; Michor, H; Heinrich, P R; Müller, H; Puchegger, S; Klobes, B; Hermann, R P; Reinecker, M; Eisenmenger-Sitter, Ch; Broz, P; Bauer, E; Giester, G; Zehetbauer, M; Rogl, P F

    2016-07-01

    Novel filled skutterudites BayNi4Sb12-xSnx (ymax = 0.93) have been prepared by arc melting followed by annealing at 250, 350 and 450 °C up to 30 days in vacuum-sealed quartz vials. Extension of the homogeneity region, solidus temperatures and structural investigations were performed for the skutterudite phase in the ternary Ni-Sn-Sb and in the quaternary Ba-Ni-Sb-Sn systems. Phase equilibria in the Ni-Sn-Sb system at 450 °C were established by means of Electron Probe Microanalysis (EPMA) and X-ray Powder Diffraction (XPD). With rather small cages Ni4(Sb,Sn)12, the Ba-Ni-Sn-Sb skutterudite system is perfectly suited to study the influence of filler atoms on the phonon thermal conductivity. Single-phase samples with the composition Ni4Sb8.2Sn3.8, Ba0.42Ni4Sb8.2Sn3.8 and Ba0.92Ni4Sb6.7Sn5.3 were used to measure their physical properties, i.e. temperature dependent electrical resistivity, Seebeck coefficient and thermal conductivity. The resistivity data demonstrate a crossover from metallic to semiconducting behaviour. The corresponding gap width was extracted from the maxima in the Seebeck coefficient data as a function of temperature. Single crystal X-ray structure analyses at 100, 200 and 300 K revealed the thermal expansion coefficients as well as Einstein and Debye temperatures for Ba0.73Ni4Sb8.1Sn3.9 and Ba0.95Ni4Sb6.1Sn5.9. These data were in accordance with the Debye temperatures obtained from the specific heat (4.4 K < T < 140 K) and Mössbauer spectroscopy (10 K < T < 290 K). Rather small atom displacement parameters for the Ba filler atoms indicate a severe reduction in the "rattling behaviour" consistent with the high levels of lattice thermal conductivity. The elastic moduli, collected from Resonant Ultrasonic Spectroscopy ranged from 100 GPa for Ni4Sb8.2Sn3.8 to 116 GPa for Ba0.92Ni4Sb6.7Sn5.3. The thermal expansion coefficients were 11.8 × 10(-6) K(-1) for Ni4Sb8.2Sn3.8 and 13.8 × 10(-6) K(-1) for Ba0.92Ni4Sb6.7Sn5.3. The room temperature Vickers

  20. Structural phase transition, electronic and elastic properties of rocksalt structure SnAs and SnSb

    NASA Astrophysics Data System (ADS)

    Shrivastava, Deepika; Dabhi, Shweta D.; Jha, Prafulla K.; Sanyal, Sankar P.

    2016-10-01

    Pressure induced structural phase transitions in SnAs and SnSb have been studied using ab-initio density functional theory. The phase transition from NaCl to CsCl structure occurs at 29.8 GPa for SnAs, which agrees well with experimental data, while the same for SnSb is found to be 10.6 GPa, reported for the first time. The calculated ground state properties are in good agreement with available experimental and theoretical results. The electronic and bonding properties have also been analyzed. The elastic constants along with other secondary elasticity properties in B1 (NaCl-type) phase are also estimated at ambient as well as high pressure.

  1. Pb-free Sn-Ag-Cu ternary eutectic solder

    DOEpatents

    Anderson, Iver E.; Yost, Frederick G.; Smith, John F.; Miller, Chad M.; Terpstra, Robert L.

    1996-06-18

    A Pb-free solder includes a ternary eutectic composition consisting essentially of about 93.6 weight % Sn-about 4.7 weight % Ag-about 1.7 weight % Cu having a eutectic melting temperature of about 217.degree. C. and variants of the ternary composition wherein the relative concentrations of Sn, Ag, and Cu deviate from the ternary eutectic composition to provide a controlled melting temperature range (liquid-solid "mushy" zone) relative to the eutectic melting temperature (e.g. up to 15.degree. C. above the eutectic melting temperature).

  2. Pb-free Sn-Ag-Cu ternary eutectic solder

    DOEpatents

    Anderson, I.E.; Yost, F.G.; Smith, J.F.; Miller, C.M.; Terpstra, R.L.

    1996-06-18

    A Pb-free solder includes a ternary eutectic composition consisting essentially of about 93.6 weight % Sn-about 4.7 weight % Ag-about 1.7 weight % Cu having a eutectic melting temperature of about 217 C and variants of the ternary composition wherein the relative concentrations of Sn, Ag, and Cu deviate from the ternary eutectic composition to provide a controlled melting temperature range (liquid-solid ``mushy`` zone) relative to the eutectic melting temperature (e.g. up to 15 C above the eutectic melting temperature). 5 figs.

  3. Thermoelectric properties of p-type Ag1-x(Pb1-ySny)mSb1-zTem+2

    NASA Astrophysics Data System (ADS)

    Ahn, Kyunghan; Kong, Huijun; Uher, Ctirad; Kanatzidis, Mercouri G.

    2016-10-01

    The thermoelectric properties of Ag1-x(Pb1-ySny)mSb1-zTem+2 (4≤m≤16, -0.1≤x≤0.3, 1/3≤y≤2/3, 0.2≤z≤0.4; Lead Antimony Silver Tellurium Tin, LASTT-m) compositions were investigated in the temperature range of 300 to ~670 K. All samples crystallize in the average NaCl-type structure without any noticeable second phase and exhibit very narrow bandgaps of <0.1 eV. We studied a range of m values, silver concentrations (x), Pb/Sn ratios (y), and antimony concentrations (z) to determine their effects on the thermoelectric properties. The samples were investigated as melt grown polycrystalline ingots. Varying the Ag contents, the Pb/Sn ratios, and the Sb contents off-stoichiometry allowed us to control the electrical conductivity, the Seebeck coefficient, and the thermal conductivity. The electrical conductivity tends to decrease with decreasing m values. The highest ZT of ~1.1 was achieved at ~660 K for Ag0.9Pb5Sn5Sb0.8Te12 mainly due to the very low lattice thermal conductivity of ~0.4 W/(m K) around 660 K. Also, samples with charge-balanced stoichiometries, Ag(Pb1-ySny)mSbTem+2, were studied and found to exhibit a lower power factor and higher lattice thermal conductivity than the Ag1-x(Pb1-ySny)mSb1-zTem+2 compositions.

  4. Read-only memory disk with AgOx and AgInSbTe superresolution mask layer

    NASA Astrophysics Data System (ADS)

    Zhang, Feng; Wang, Yang; Xu, Wendong; Gan, Fuxi

    2005-06-01

    Two novel read-only memory (ROM) disks, one with an AgOx mask layer and the other with an AgInSbTe mask layer, are proposed and studied. The AgOx and the AgInSbTe films sputtered on the premastered substrates with pit depths of 50 nm and pit lengths (space) of 380 nm are studied by atomic force microscopy. Disk readout measurement is carried out using a dynamic setup with a laser wavelength of 632.8 nm and an object lens numerical aperture (NA) of 0.40. Results show that the superresolution effect happens only at a suitable oxygen flow ratio for the AgOx ROM disk. The best superresolution readout effect is achieved at an oxygen flow ratio of 0.5 with the smoothest film surface. Compared with the AgOx ROM disk, the AgInSbTe ROM disk has a much smoother film surface and better superresolution effect. A carrier-to-noise ratio (CNR) of above 40 dB can be obtained at an appropriate readout power and readout velocity. The readout CNR of both the AgOx and AgInSbTe ROM disks have a nonlinear dependence on the readout power. The superresolution readout mechanisms for these ROM disks are analyzed and compared as well.

  5. COMPARING SEGREGATION PROFILES OF Sn AND Sb IN SINGLE AND POLYCRYSTALLINE Cu

    NASA Astrophysics Data System (ADS)

    Asante, J. K. O.; Roos, W. D.

    2012-02-01

    The kinetics as well as the equilibrium segregation profiles of very low concentrations of Sn (0.14 at.%) and Sb (0.12 at.%) in a polycrystalline Cu sample were measured by Auger electron spectroscopy. These profiles were compared to those from a Cu(100), Sb, Sn ternary single crystal which was subjected to the same experimental conditions. The results are explained in terms of solute segregation to grain boundaries and surface interfaces. The comparison also indicate that not only bulk diffusion, interactions and segregation energies play a role in the surface enrichment of the species, but in polycrystalline samples, the doping order of the specimen is to be considered as well. The differences in interaction energies of Sn and Sb also suggest an indirect method of measuring the concentrations of nonsegregating impurities in polycrystalline samples.

  6. Thermoelectric properties of Co(x)Ni(4-x)Sb(12-y)Sn(y) ternary skutterudites

    NASA Technical Reports Server (NTRS)

    Mackey, Jon A.; Dynys, Frederick W.; Sehirlioglu, Alp

    2014-01-01

    Thermoelectric materials based on the skutterudite crystal structure have demonstrated enhanced performance (ZT greater than 1), along with good thermal stability and favorable mechanical properties. Binary skutterudites, with single and multiple fillers, have been intensively studied in recent years. Compared to binary skutterudites, the ternary systems have received less attention, e.g. Ni4Sb8Sn4. Ternary skutterudites are isoelectronic variants of binary skutterudites; cation substitutions appear to be isostructural to their binary analogues. In general, ternary skutterudites exhibit lower thermal conductivity. Ternary systems of Ni4Bi8Ge4, Ni4Sb8Ge4, and Ni4Sb8Sn4 were investigated using combined solidification and sintering steps. Skutterudite formation was not achieved in the Ni4Bi8Ge4 and Ni4Sb8Ge4 systems; skutterudite formation occurred in Ni4Sb8Sn4 system. P-type material was achieved by Co substitution for Ni. Thermoelectric properties were measured from 298 K to 673 K for Ni4Sb8Sn4, Ni4 Sb7Sn5 and Co2Ni2Sb7Sn5. N-type Ni4Sb8Sn4 exhibit the highest figure of merit of 0.1 at 523 K.

  7. Preparation and Characterization of SnO2/Ag Hollow Microsphere via a Convenient Hydrothermal Route.

    PubMed

    Qiao, Xiuqing; Hu, Fuchao; Hou, Dongfang; Li, Dongsheng

    2016-04-01

    SnO2/Ag hollow microsphere, assembled form SnO2 and Ag nanoparticles, was synthesized via a facile one-step hydrothermal synthesis method using Na2SnO3.3H2O, CO(NH2)2 and AgNO3 as raw materials. XRD, SEM, and TEM results revealed that the obtained SnO2/Ag hollow microsphere with diameters of ca.3-5 µm was built from uniformly distributed rutile SnO2 and cubic Ag nanoparticles. Moreover, XPS results indicate the existence of strong interaction between Ag and SnO2 nanoparticles, rather than simply physical contact, endowing the SnO2/Ag hollow microspheres with excellent photocatalytic performance in the degradation of RhB solution under visible light irradiation. PMID:27451773

  8. Vacancy complexes in Sb-doped SnO{sub 2}

    SciTech Connect

    Korhonen, E.; Tuomisto, F.; Bierwagen, O.; Speck, J. S.; White, M. E.; Galazka, Z.

    2014-02-21

    MBE-grown Sb-doped epitaxial SnO{sub 2} thin-film samples with varying doping concentrations have been measured using positron Doppler spectroscopy. Vacancies were found in varying amounts, the general trend points to a decrease in vacancy concentration as dopant concentration increases. The exact identity of the vacancy defects is not known, but results suggest complexes of Sn and O vacancies.

  9. Efficient photocatalytic degradation of phenol in aqueous solution by SnO2:Sb nanoparticles

    NASA Astrophysics Data System (ADS)

    Al-Hamdi, Abdullah M.; Sillanpää, Mika; Bora, Tanujjal; Dutta, Joydeep

    2016-05-01

    Photodegradation of phenol in the presence of tin dioxide (SnO2) nanoparticles under UV light irradiation is known to be an effective photocatalytic process. However, phenol degradation under solar light is less effective due to the large band gap of SnO2. In this study antimony (Sb) doped tin dioxide (SnO2) nanoparticles were prepared at a low temperature (80 °C) by a sol-gel method and studied for its photocatalytic activity with phenol as a test contaminant. The catalytic degradation of phenol in aqueous media was studied using high performance liquid chromatography and total organic carbon measurements. The change in the concentration of phenol affects the pH of the solution due to the by-products formed during the photo-oxidation of phenol. The photoactivity of SnO2:Sb was found to be a maximum for 0.6 wt.% Sb doped SnO2 nanoparticles with 10 mg L-1 phenol in water. Within 2 h of photodegradation, more than 95% of phenol could be removed under solar light irradiation.

  10. Ab-Initio Determination of Novel Crystal Structures of the Thermoelectric Material MgAgSb

    SciTech Connect

    Kirkham, Melanie J; Moreira Dos Santos, Antonio F; Rawn, Claudia J; Lara-Curzio, Edgar; Sharp, Jeff W.; Thompson, Alan

    2012-01-01

    Materials with the half-Heusler structure possess interesting electrical and magnetic properties, including potential for thermoelectric applications. MgAgSb is compositionally and structurally related to many half-Heusler materials, but has not been extensively studied. This work presents the high-temperature X-ray diffraction analysis of MgAgSb between 27 and 420 C, complemented with thermoelectric property measurements. MgAgSb is found to exist in three different structures in this temperature region, taking the half-Heusler structure at high temperatures, a Cu2Sb-related structure at intermediate temperatures, and a previously unreported tetragonal structure at room temperature. All three structures are related by a distorted Mg-Sb rocksalt-type sublattice, differing primarily in the Ag location among the available tetrahedral sites. Transition temperatures between the three phases correlate well with discontinuities in the Seebeck coefficient and electrical conductivity; the best performance occurs with the novel room temperature phase. For application of MgAgSb as a thermoelectric material, it may be desirable to develop methods to stabilize the room temperature phase at higher temperatures.

  11. Investigation of the Phase Equilibria of Sn-Cu-Au Ternary and Ag-Sn-Cu-Au Quaternary Systems and Interfacial Reactions in Sn-Cu/Au Couples

    NASA Astrophysics Data System (ADS)

    Yen, Yee-Wen; Jao, Chien-Chung; Hsiao, Hsien-Ming; Lin, Chung-Yung; Lee, Chiapyng

    2007-02-01

    The phase equilibria of the Sn-Cu-Au ternary, Ag-Sn-Cu-Au quaternary systems and interfacial reactions between Sn-Cu alloys and Au were experimentally investigated at specific temperatures in this study. The experimental results indicated that there existed three ternary intermetallic compounds (IMCs) and a complete solid solubility between AuSn and Cu6Sn5 phases in the Sn-Cu-Au ternary system at 200°C. No quaternary IMC was found in the isoplethal section of the Ag-Sn-Cu-Au quaternary system. Three IMCs, AuSn, AuSn2, and AuSn4, were found in all couples. The same three IMCs and (Au,Cu)Sn/(Cu,Au)6Sn5 phases were found in all Sn-Cu/Au couples. The thickness of these reaction layers increased with increasing temperature and time. The mechanism of IMC growth can be described by using the parabolic law. In addition, when the reaction time was extended and the Cu content of the alloy was increased, the AuSn4 phase disappeared gradually. The (Au, Cu)Sn and (Cu,Au)6Sn5 layers played roles as diffusion barriers against Sn in Sn-Cu/Au reaction couple systems.

  12. High temperature magnetic order in Zn1-x Mn x SnSb2+MnSb nanocomposite ferromagnetic semiconductors

    NASA Astrophysics Data System (ADS)

    Kilanski, L.; Górska, M.; Ślawska-Waniewska, A.; Lewińska, S.; Szymczak, R.; Dynowska, E.; Podgórni, A.; Dobrowolski, W.; Ralević, U.; Gajić, R.; Romčević, N.; Fedorchenko, I. V.; Marenkin, S. F.

    2016-08-01

    We present studies of structural, magnetic, and electrical properties of Zn1-x Mn x SnSb2+MnSb nanocomposite ferromagnetic semiconductors with the average Mn-content, \\bar{x} , changing from 0.027 up to 0.138. The magnetic force microscope imaging done at room temperature shows the presence of a strong signal coming from MnSb clusters. Magnetic properties show the paramagnet-ferromagnet transition with the Curie temperature, T C, equal to about 522 K and the cluster-glass behavior with the transition temperature, T CG, equal to about 465 K, both related to MnSb clusters. The magnetotransport studies show that all investigated samples are p-type semiconductors with high hole concentration, p, changing from 1021 to 1022 cm-3. A large increase in the resistivity as a function of the magnetic field is observed at T  <  10 K and small magnetic fields, |B|<100 mT, for all the studied samples with a maximum amplitude of the magnetoresistance about 460% at T  =  1.4 K. The large increase in the resistivity is most probably caused by the appearance of the superconducting state in the samples at T  <  4.3 K.

  13. {[CuSn5 Sb3 ](2-) }2 : A Dimer of Inhomogeneous Superatoms.

    PubMed

    Wilson, Robert J; Broeckaert, Lies; Spitzer, Fabian; Weigend, Florian; Dehnen, Stefanie

    2016-09-19

    Reaction of the binary Zintl anion (Sn2 Sb2 )(2-) with the β-diketiminato complex [LCu(NCMe)] (L=nacnac=[(N(C6 H3 (i) Pr2 -2,6)C(Me))2 CH](-) ) in ethylenediamine or DMF affords the ternary cluster dimer {[CuSn5 Sb3 ](2-) }2 (1) as its [K(crypt-222)](+) salt. The chemical formulation of 1 is supported by energy-dispersive X-ray spectroscopy (EDX) and quantum chemical calculations. Each monomeric part of the dimer represents a trimetallic "[CuSn5 Sb3 ](2-) " cluster, with an architecture in between a tricapped trigonal prism and a capped square antiprism. As shown by quantum chemical investigations, the presence of Sb atoms and, in particular, of Cu atoms in the cluster skeleton makes the monomeric unit behave like an inhomogeneous superatom, which clearly prefers to dimerize, thereby producing a relatively short, yet virtually non-bonding Cu⋅⋅⋅Cu distance.

  14. {[CuSn5 Sb3 ](2-) }2 : A Dimer of Inhomogeneous Superatoms.

    PubMed

    Wilson, Robert J; Broeckaert, Lies; Spitzer, Fabian; Weigend, Florian; Dehnen, Stefanie

    2016-09-19

    Reaction of the binary Zintl anion (Sn2 Sb2 )(2-) with the β-diketiminato complex [LCu(NCMe)] (L=nacnac=[(N(C6 H3 (i) Pr2 -2,6)C(Me))2 CH](-) ) in ethylenediamine or DMF affords the ternary cluster dimer {[CuSn5 Sb3 ](2-) }2 (1) as its [K(crypt-222)](+) salt. The chemical formulation of 1 is supported by energy-dispersive X-ray spectroscopy (EDX) and quantum chemical calculations. Each monomeric part of the dimer represents a trimetallic "[CuSn5 Sb3 ](2-) " cluster, with an architecture in between a tricapped trigonal prism and a capped square antiprism. As shown by quantum chemical investigations, the presence of Sb atoms and, in particular, of Cu atoms in the cluster skeleton makes the monomeric unit behave like an inhomogeneous superatom, which clearly prefers to dimerize, thereby producing a relatively short, yet virtually non-bonding Cu⋅⋅⋅Cu distance. PMID:27558912

  15. Growth of an {alpha}-Sn film on an InSb(111) A-(2x2) surface

    SciTech Connect

    Kondo, Daiyu; Sakamoto, Kazuyuki; Shima, Masahide; Takeyama, Wakaba; Nakamura, Kenya; Ono, Kanta; Oshima, Masaharu; Kasukabe, Yoshitaka

    2004-12-15

    We have investigated the initial growth process of {alpha}-Sn films on the In-terminated InSb(111)A-(2x2) surface using low-energy electron diffraction (LEED) and high-resolution core-level photoelectron spectroscopy. Taking the LEED observation and the Sn coverage-dependent integrated intensities of the In 4d, Sb 4d, and Sn 4d core-level spectra into account, we conclude that the {alpha}-Sn film grows epitaxially by a bilayer mode and that there is no interdiffusion of the substrate atoms as suggested in the literature. Furthermore, the coverage-dependent In 4d and Sn 4d core levels indicate that the In vacancy site of InSb(111)A-(2x2) surface is not the preferable Sn absorption site.

  16. The antimony-group 11 chemical bond: Dissociation energies of the diatomic molecules CuSb, AgSb, and AuSb

    SciTech Connect

    Carta, V.; Ciccioli, A. E-mail: andrea.ciccioli@uniroma1.it; Gigli, G. E-mail: andrea.ciccioli@uniroma1.it

    2014-02-14

    The intermetallic molecules CuSb, AgSb, and AuSb were identified in the effusive molecular beam produced at high temperature under equilibrium conditions in a double-cell-like Knudsen source. Several gaseous equilibria involving these species were studied by mass spectrometry as a function of temperature in the overall range 1349–1822 K, and the strength of the chemical bond formed between antimony and the group 11 metals was for the first time measured deriving the following thermochemical dissociation energies (D{sub 0}{sup ∘}, kJ/mol): 186.7 ± 5.1 (CuSb), 156.3 ± 4.9 (AgSb), 241.3 ± 5.8 (AuSb). The three species were also investigated computationally at the coupled cluster level with single, double, and noniterative quasiperturbative triple excitations (CCSD(T)). The spectroscopic parameters were calculated from the potential energy curves and the dissociation energies were evaluated at the Complete Basis Set limit, resulting in an overall good agreement with experimental values. An approximate evaluation of the spin-orbit effect was also performed. CCSD(T) calculations were further extended to the corresponding group 11 arsenide species which are here studied for the first time and the following dissociation energies (D{sub 0}{sup ∘}, kJ/mol): 190 ± 10 (CuAs), 151 ± 10 (AgAs), 240 ± 15 (AuAs) are proposed. Taking advantage of the new experimental and computational information here presented, the bond energy trends along group 11 and 4th and 5th periods of the periodic table were analyzed and the bond energies of the diatomic species CuBi and AuBi, yet experimentally unobserved, were predicted on an empirical basis.

  17. The antimony-group 11 chemical bond: Dissociation energies of the diatomic molecules CuSb, AgSb, and AuSb

    NASA Astrophysics Data System (ADS)

    Carta, V.; Ciccioli, A.; Gigli, G.

    2014-02-01

    The intermetallic molecules CuSb, AgSb, and AuSb were identified in the effusive molecular beam produced at high temperature under equilibrium conditions in a double-cell-like Knudsen source. Several gaseous equilibria involving these species were studied by mass spectrometry as a function of temperature in the overall range 1349-1822 K, and the strength of the chemical bond formed between antimony and the group 11 metals was for the first time measured deriving the following thermochemical dissociation energies (D_0°, kJ/mol): 186.7 ± 5.1 (CuSb), 156.3 ± 4.9 (AgSb), 241.3 ± 5.8 (AuSb). The three species were also investigated computationally at the coupled cluster level with single, double, and noniterative quasiperturbative triple excitations (CCSD(T)). The spectroscopic parameters were calculated from the potential energy curves and the dissociation energies were evaluated at the Complete Basis Set limit, resulting in an overall good agreement with experimental values. An approximate evaluation of the spin-orbit effect was also performed. CCSD(T) calculations were further extended to the corresponding group 11 arsenide species which are here studied for the first time and the following dissociation energies (D_0°, kJ/mol): 190 ± 10 (CuAs), 151 ± 10 (AgAs), 240 ± 15 (AuAs) are proposed. Taking advantage of the new experimental and computational information here presented, the bond energy trends along group 11 and 4th and 5th periods of the periodic table were analyzed and the bond energies of the diatomic species CuBi and AuBi, yet experimentally unobserved, were predicted on an empirical basis.

  18. Facile synthesis of hybrid nanorods with the Sb2Se3/AgSbSe2 heterojunction structure for high performance photodetectors.

    PubMed

    Chen, Shuo; Qiao, Xvsheng; Wang, Fengxia; Luo, Qun; Zhang, Xianghua; Wan, Xia; Xu, Yang; Fan, Xianping

    2016-01-28

    An effective colloidal process involving the hot-injection method is developed to synthesize uniform single-crystalline Sb2Se3 nanorods in high yields. The photoconductive characteristics of the as-synthesized Sb2Se3 nanorods are investigated by developing a film-based photodetector and this device displays a remarkable response to visible light with an "ON/OFF" ratio as high as 50 (with an incident light density of 12.05 mW cm(-2)), short response/recovery times and long-term durability. To overcome the challenge of the intrinsic low electrical conductivity of Sb2Se3, hybrid nanorods with the Sb2Se3/AgSbSe2 heterojunction structure having a type-II band alignment are firstly prepared. The electric current of the photodetector based on the Sb2Se3/AgSbSe2 hybrid nanorod film has been significantly increased both in the dark and under light illumination. The responsivity of the photodetector based on the Sb2Se3/AgSbSe2 hybrid nanorod film is about 4.2 times as much as that of the photodetector based on the Sb2Se3 nanorod film. This improvement can be considered as an important step to promote Sb2Se3 based semiconductors for applications in high performance photodetectors.

  19. Photocatalytic performance of Ag doped SnO2 nanoparticles modified with curcumin

    NASA Astrophysics Data System (ADS)

    Vignesh, K.; Hariharan, R.; Rajarajan, M.; Suganthi, A.

    2013-07-01

    Visible light active Ag doped SnO2 nanoparticles modified with curcumin (Cur-Ag-SnO2) have been prepared by a combined precipitation and chemical impregnation route. The optical properties, phase structures and morphologies of the as-prepared nanoparticles were characterized using UV-visible diffuse reflectance spectra (UV-vis-DRS), X-ray powder diffraction (XRD), scanning electron microscopy (SEM), energy dispersive X-ray spectroscopy (EDS) and X-ray photoelectron spectroscopy (XPS). The surface area was measured by Brunauer. Emmett. Teller (B.E.T) analysis. Compared to bare SnO2, the surface modified photocatalysts (Ag-SnO2 and Cur-Ag-SnO2) showed a red shift in the visible region. The photocatalytic activity was monitored via the degradation of rose bengal (RB) dye and the results revealed that Cur-Ag-SnO2 shows better photocatalytic activity than that of Ag-SnO2 and SnO2. The superior photocatalytic activity of Cur-Ag-SnO2 could be attributed to the effective electron-hole separation by surface modification. The effect of photocatalyst concentration, initial dye concentration and electron scavenger on the photocatalytic activity was examined in detail. Furthermore, the antifungal activity of the photocatalysts and the reusability of Cur-Ag-SnO2 were tested.

  20. Local atomic structure inheritance in Ag{sub 50}Sn{sub 50} melt

    SciTech Connect

    Bai, Yanwen; Bian, Xiufang Qin, Jingyu; Hu, Lina; Yang, Jianfei; Zhang, Kai; Zhao, Xiaolin; Yang, Chuncheng; Zhang, Shuo; Huang, Yuying

    2014-01-28

    Local structure inheritance signatures were observed during the alloying process of the Ag{sub 50}Sn{sub 50} melt, using high-temperature X-ray diffraction and ab initio molecular dynamics simulations. The coordination number N{sub m} around Ag atom is similar in the alloy and in pure Ag melts (N{sub m} ∼ 10), while, during the alloying process, the local structure around Sn atoms rearranges. Sn-Sn covalent bonds were substituted by Ag-Sn chemical bonds, and the total coordination number around Sn increases by about 70% as compared with those in the pure Sn melt. Changes in the electronic structure of the alloy have been studied by Ag and Sn K-edge X-ray absorption spectroscopy, as well as by calculations of the partial density of states. We propose that a leading mechanism for local structure inheritance in Ag{sub 50}Sn{sub 50} is due to s-p dehybridization of Sn and to the interplay between Sn-s and Ag-d electrons.

  1. Enhanced separation efficiency of photoinduced charges for antimony-doped tin oxide (Sb-SnO{sub 2})/TiO{sub 2} heterojunction semiconductors with varied Sb doping concentration

    SciTech Connect

    Zhang, Zhen-Long; Ma, Wen-Hai; Mao, Yan-Li

    2014-09-07

    In this paper, antimony-doped tin oxide (Sb-SnO{sub 2}) nanoparticles were synthesized with varied Sb doping concentration, and the Sb-SnO{sub 2}/TiO{sub 2} heterojunction semiconductors were prepared with Sb-SnO{sub 2} and TiO{sub 2}. The separation efficiency of photoinduced charges was characterized with surface photovoltage (SPV) technique. Compared with Sb-SnO{sub 2} and TiO{sub 2}, Sb-SnO{sub 2}/TiO{sub 2} presents an enhanced separation efficiency of photoinduced charges, and the SPV enhancements were estimated to be 1.40, 1.43, and 1.99 for Sb-SnO{sub 2}/TiO{sub 2} composed of Sb-SnO{sub 2} with the Sb doping concentration of 5%, 10%, and 15%, respectively. To understand the enhancement, the band structure of Sb-SnO{sub 2} and TiO{sub 2} in the heterojunction semiconductor was determined, and the conduction band offsets (CBO) between Sb-SnO{sub 2} and TiO{sub 2} were estimated to be 0.56, 0.64, and 0.98 eV for Sb-SnO{sub 2}/TiO{sub 2} composed of Sb-SnO{sub 2} with the Sb doping concentration of 5%, 10%, and 15%, respectively. These results indicate that the separation efficiency enhancement is resulting from the energy level matching, and the increase of enhancement is due to the rising of CBO.

  2. Lead-free solder alloys: Thermodynamic properties of the (Au + Sb + Sn) and the (Au + Sb) system.

    PubMed

    Hindler, Michael; Guo, Zhongnan; Mikula, Adolf

    2012-12-01

    The thermodynamic properties of liquid (Au-Sb-Sn) alloys were studied with an electromotive force (EMF) method using the eutectic mixture of KCl/LiCl with addition of SnCl2 as a liquid electrolyte. Activities of Sn in the liquid alloys were measured at three cross-sections with constant molar ratios of Au:Sb = 2:1, 1:1, and 1:2 with tin in the concentration range between 5 at.% and 90 at.% from the liquidus of the samples up to 1073 K. The integral Gibbs excess energies and the integral enthalpies at 873 K were calculated by Gibbs-Duhem integration. Additionally liquid Au-Sb alloys have been measured at 913 K with the EMF method as no reliable data for the Gibbs excess energies have been found in literature. The eutectic mixture of KCl/LiCl with addition of SbCl3 has been used as an electrolyte for the measurements. The Gibbs excess energies from the (Au + Sb) system were necessary for the integration of the thermodynamic properties of the ternary (Au + Sb + Sn) system.

  3. Sn-Ag-Cu Nanosolders: Solder Joints Integrity and Strength

    NASA Astrophysics Data System (ADS)

    Roshanghias, Ali; Khatibi, Golta; Yakymovych, Andriy; Bernardi, Johannes; Ipser, Herbert

    2016-08-01

    Although considerable research has been dedicated to the synthesis and characterization of lead-free nanoparticle solder alloys, only very little has been reported on the reliability of the respective joints. In fact, the merit of nanoparticle solders with depressed melting temperatures close to the Sn-Pb eutectic temperature has always been challenged when compared with conventional solder joints, especially in terms of inferior solderability due to the oxide shell commonly present on the nanoparticles, as well as due to compatibility problems with common fluxing agents. Correspondingly, in the current study, Sn-Ag-Cu (SAC) nanoparticle alloys were combined with a proper fluxing vehicle to produce prototype nanosolder pastes. The reliability of the solder joints was successively investigated by means of electron microscopy and mechanical tests. As a result, the optimized condition for employing nanoparticles as a competent nanopaste and a novel procedure for surface treatment of the SAC nanoparticles to diminish the oxide shell prior to soldering are being proposed.

  4. Sn-Ag-Cu solders and solder joints: Alloy development, microstructure, and properties

    NASA Astrophysics Data System (ADS)

    Anderson, I. E.; Cook, B. A.; Harringa, J. L.; Terpstra, R. L.

    2002-06-01

    Slow cooling of Sn-Ag-Cu and Sn-Ag-Cu-X (X = Fe, Co) solder-joint specimens made by hand soldering simulated reflow in surface-mount assembly to achieve similar as-solidified joint microstructures for realistic shearstrength testing, using Sn-3.5Ag (wt.%) as a baseline. Minor substitutions of either cobalt or iron for copper in Sn-3.7Ag-0.9Cu refined the joint matrix microstructure, modified the Cu6Sn5 intermetallic phase at the copper substrate/solder interface, and increased the shear strength. At elevated (150°C) temperature, no significant difference in shear strength was found in all of the alloys studied. Ambient temperature shear strength was reduced by largescale tin dendrites in the joint microstructure, especially by the coarse dendrites in solute poor Sn-Ag-Cu.

  5. Zintl-phase compounds with SnSb4 tetrahedral anions: electronic structure and thermoelectric properties

    SciTech Connect

    Zhang, Lijun; Du, Mao-Hua; Singh, David J

    2010-01-01

    We report the investigation of Zintl-phase Na(K){sub 8}SnSb{sub 4} and related compounds that contain SnSb{sub 4} tetrahedral anions using first principles electronic structure, Boltzmann transport, and density functional phonon calculations. We find that these compounds are narrow-gap semiconductors and there is a combination of heavy and light bands at valence band edge, which may lead to a combination of high thermopower and reasonable conductivity. High values of the thermopower are found for p-type doping within the Boltzmann transport theory. Furthermore, these materials are expected to have low thermal conductivity due to their structures that consist of a network of weakly coupled SnSb{sub 4} clusters, which leads to low phonon frequencies. In particular, we find low-frequency optical phonons that should effectively scatter the heat-carrying acoustic phonons. These results are discussed in terms of the structure, which consists of anionic clusters. Based on the results, it is suggested that such compounds may represent a useful paradigm for finding new thermoelectric materials.

  6. Electrochemical degradation of pyridine by Ti/SnO2-Sb tubular porous electrode.

    PubMed

    Li, Duo; Tang, Jingyan; Zhou, Xiezhen; Li, Jiansheng; Sun, Xiuyun; Shen, Jinyou; Wang, Lianjun; Han, Weiqing

    2016-04-01

    Diffusion in electrochemistry is a critical issue for water purification. Electrocatalytic reactor system in improving water quality is a useful way to induce convection to enhance diffusion. This study focuses on the preparation and the characterization of Ti/SnO2-Sb tubular porous electrode for degrading pyridine wastewater. The electrode as an anode in reactor system is prepared by coating SnO2-Sb as an electro-catalyst via Pechini method on the tubular porous Ti. Scanning Electron Microscopy, Energy Dispersive Spectrum, X-ray Diffraction and Pore Distribution are employed to evaluate the structure and morphology of the electrodes coatings, and Linear Sweep Voltammetry and Cyclic Voltammetry are used to illustrate the electrochemical properties of the electrodes coatings. Furthermore, the electrochemical oxidation performance of Ti/SnO2-Sb tubular porous electrode is characterized by degrading pyridine wastewater. The effects of flow and static pattern, initial pyridine concentration, supporting electrolyte concentration, current density and pH on the performance of the reactor were investigated in the electrocatalytic reactor system. The results indicated that the removal ratio of pyridine reaches maximum which is 98% under the optimal operation conditions, that are 100 mg L(-1) initial pyridine concentration, 10 g L(-1) supporting electrolyte concentration, 30 mA cm(-2) current density and pH 3. Transition state calculation based on the density function theory was combined with High Performance Liquid Chromatography, Gas Chromatography and Ionic Chromatography results to describe the pathway of pyridine degradation. PMID:26849194

  7. Interfacial Reactions and Joint Strengths of Sn- xZn Solders with Immersion Ag UBM

    NASA Astrophysics Data System (ADS)

    Jee, Y. K.; Yu, Jin

    2010-10-01

    The solder joint microstructures of immersion Ag with Sn- xZn ( x = 0 wt.%, 1 wt.%, 5 wt.%, and 9 wt.%) solders were analyzed and correlated with their drop impact reliability. Addition of 1 wt.% Zn to Sn did not change the interface microstructure and was only marginally effective. In comparison, the addition of 5 wt.% or 9 wt.% Zn formed layers of AgZn3/Ag5Zn8 at the solder joint interface, which increased drop reliability significantly. Under extensive aging, Ag-Zn intermetallic compounds (IMCs) transformed into Cu5Zn8 and Ag3Sn, and the drop impact resistance at the solder joints deteriorated up to a point. The beneficial role of Zn on immersion Ag pads was ascribed to the formation of Ag-Zn IMC layers, which were fairly resistant to the drop impact, and to the suppression of the brittle Cu6Sn5 phase at the joint interface.

  8. Pt- and Ru-doped SnO₂-Sb anodes with high stability in alkaline medium.

    PubMed

    Berenguer, Raúl; Sieben, Juan Manuel; Quijada, César; Morallón, Emilia

    2014-12-24

    Different Pt- and Ru-doped Ti/SnO2-Sb electrodes were synthesized by thermal decomposition. The effect of the gradual substitution of Sb by Ru in the nominal composition on the physicochemical and electrochemical properties were evaluated. The electrochemical stability of the electrodes was estimated from accelerated tests at 0.5 A cm(-2) in 1 M NaOH. Both as-synthesized and deactivated electrodes were thoroughly characterized by scanning electron microscopy (SEM), energy-dispersive X-ray microanalysis (EDX), transmission electron microscopy (TEM), X-ray photoelectron spectroscopy (XPS) and X-ray diffraction analysis (XRD). The incorporation of a small amount (about 3 at. %) of both Pt and Ru into the SnO2-Sb electrodes produced a 400-times increase in their service life in alkaline medium, with no remarkable change in the electrocatalysis of the oxygen evolution reaction (OER). It is concluded that the deactivation of the electrodes is promoted by alkaline dissolution of metal species and coating detachment at high potentials. The introduction of Pt has a coating compacting effect, and Ru(IV), at low amounts until 9.75 at. %, replaces the Sn(IV) cations in the rutile-like SnO2 structure to form a solid solution that strongly increases the stability of the electrodes. The observed Ru segregation and decreased stability for larger Ru contents (x > 9.75 at. %), together with the selective dissolution of Ru after deactivation, suggest that the formation of a homogeneous (RuδSn1-δ)O2 single-phase is crucial for the stabilization of these electrodes. PMID:25453898

  9. Pt- and Ru-doped SnO₂-Sb anodes with high stability in alkaline medium.

    PubMed

    Berenguer, Raúl; Sieben, Juan Manuel; Quijada, César; Morallón, Emilia

    2014-12-24

    Different Pt- and Ru-doped Ti/SnO2-Sb electrodes were synthesized by thermal decomposition. The effect of the gradual substitution of Sb by Ru in the nominal composition on the physicochemical and electrochemical properties were evaluated. The electrochemical stability of the electrodes was estimated from accelerated tests at 0.5 A cm(-2) in 1 M NaOH. Both as-synthesized and deactivated electrodes were thoroughly characterized by scanning electron microscopy (SEM), energy-dispersive X-ray microanalysis (EDX), transmission electron microscopy (TEM), X-ray photoelectron spectroscopy (XPS) and X-ray diffraction analysis (XRD). The incorporation of a small amount (about 3 at. %) of both Pt and Ru into the SnO2-Sb electrodes produced a 400-times increase in their service life in alkaline medium, with no remarkable change in the electrocatalysis of the oxygen evolution reaction (OER). It is concluded that the deactivation of the electrodes is promoted by alkaline dissolution of metal species and coating detachment at high potentials. The introduction of Pt has a coating compacting effect, and Ru(IV), at low amounts until 9.75 at. %, replaces the Sn(IV) cations in the rutile-like SnO2 structure to form a solid solution that strongly increases the stability of the electrodes. The observed Ru segregation and decreased stability for larger Ru contents (x > 9.75 at. %), together with the selective dissolution of Ru after deactivation, suggest that the formation of a homogeneous (RuδSn1-δ)O2 single-phase is crucial for the stabilization of these electrodes.

  10. Synthesis and high temperature thermoelectric properties of Yb0.25Co4Sb12-(Ag2Te)x(Sb2Te3)1-x nanocomposites

    NASA Astrophysics Data System (ADS)

    Zheng, Jin; Peng, Jiangying; Zheng, Zhexin; Zhou, Menghan; Thompson, Emily; Yang, Junyou; Xiao, Wanli

    2015-09-01

    Nanocomposites are becoming a new paradigm in thermoelectric study: by incorporating nanophase(s) into a bulk matrix, a nanocomposite often exhibits unusual thermoelectric properties beyond its constituent phases. To date most nanophases are binary, while reports on ternary nanoinclusions are scarce. In this work, we conducted an exploratory study of introducing ternary (Ag2Te)x(Sb2Te3)1-x inclusions in the host matrix of Yb0.25Co4Sb12. Yb0.25Co4Sb12 - 4wt% (Ag2Te)x(Sb2Te3)1-x nanocomposites were prepared by a melting-milling-hot-pressing process. Microstructural analysis showed that poly-dispersed nanosized Ag-Sb-Te inclusions are distributed on the grain boundaries of Yb0.25Co4Sb12 coarse grains. Compared to the pristine nanoinclusion-free sample, the electrical conductivity, Seebeck coefficient, and thermal conductivity were optimized simultaneously upon nanocompositing, while the carrier mobility was largely remained. A maximum ZT of 1.3 was obtained in Yb0.25Co4Sb12-4wt% (Ag2Te)0.42(Sb2Te3)0.58 at 773 K, a ~ 40% increase compared to the pristine sample. The electron and phonon mean-free-path were estimated to help quantify the observed changes in the carrier mobility and lattice thermal conductivity.

  11. Synthesis and high temperature thermoelectric properties of Yb0.25Co4Sb12-(Ag2Te) x (Sb2Te3)1-x nanocomposites.

    PubMed

    Zheng, Jin; Peng, Jiangying; Zheng, Zhexin; Zhou, Menghan; Thompson, Emily; Yang, Junyou; Xiao, Wanli

    2015-01-01

    Nanocomposites are becoming a new paradigm in thermoelectric study: by incorporating nanophase(s) into a bulk matrix, a nanocomposite often exhibits unusual thermoelectric properties beyond its constituent phases. To date most nanophases are binary, while reports on ternary nanoinclusions are scarce. In this work, we conducted an exploratory study of introducing ternary (Ag2Te)x(Sb2Te3)1-x inclusions in the host matrix of Yb0.25Co4Sb12. Yb0.25Co4Sb12-4wt% (Ag2Te)x(Sb2Te3)1-x nanocomposites were prepared by a melting-milling-hot-pressing process. Microstructural analysis showed that poly-dispersed nanosized Ag-Sb-Te inclusions are distributed on the grain boundaries of Yb0.25Co4Sb12 coarse grains. Compared to the pristine nanoinclusion-free sample, the electrical conductivity, Seebeck coefficient, and thermal conductivity were optimized simultaneously upon nanocompositing, while the carrier mobility was largely remained. A maximum ZT of 1.3 was obtained in Yb0.25Co4Sb12-4wt% (Ag2Te)0.42(Sb2Te3)0.58 at 773 K, a ~ 40% increase compared to the pristine sample. The electron and phonon mean-free-path were estimated to help quantify the observed changes in the carrier mobility and lattice thermal conductivity.

  12. Lead-free solder alloys: Thermodynamic properties of the (Au + Sb + Sn) and the (Au + Sb) system

    PubMed Central

    Hindler, Michael; Guo, Zhongnan; Mikula, Adolf

    2012-01-01

    The thermodynamic properties of liquid (Au–Sb–Sn) alloys were studied with an electromotive force (EMF) method using the eutectic mixture of KCl/LiCl with addition of SnCl2 as a liquid electrolyte. Activities of Sn in the liquid alloys were measured at three cross-sections with constant molar ratios of Au:Sb = 2:1, 1:1, and 1:2 with tin in the concentration range between 5 at.% and 90 at.% from the liquidus of the samples up to 1073 K. The integral Gibbs excess energies and the integral enthalpies at 873 K were calculated by Gibbs–Duhem integration. Additionally liquid Au–Sb alloys have been measured at 913 K with the EMF method as no reliable data for the Gibbs excess energies have been found in literature. The eutectic mixture of KCl/LiCl with addition of SbCl3 has been used as an electrolyte for the measurements. The Gibbs excess energies from the (Au + Sb) system were necessary for the integration of the thermodynamic properties of the ternary (Au + Sb + Sn) system. PMID:24926101

  13. Effects of Sn Substitution on Thermoelectric Properties of Ge4SbTe5

    NASA Astrophysics Data System (ADS)

    Williams, Jared B.; Mather, Spencer; Morelli, Donald T.

    2016-02-01

    Phase-change materials are identified by their ability to rapidly alternate between amorphous and crystalline phases upon heating, exhibiting large contrast in the optical/electrical properties of the respective phases. Such materials are primarily used in memory storage applications, but recently they have also been identified as potential thermoelectric materials. Many of the phase-change materials studied today can be found on the pseudobinary (GeTe)1- x (Sb2Te3) x tie-line. Ge4SbTe5, a single-phase compound just off of the (GeTe)1- x (Sb2Te3) x tie-line, forms in a metastable rocksalt crystal structure at room temperature. It has been found that stoichiometric and undoped Ge4SbTe5 exhibits thermal conductivity of ~1.2 W/m-K at high temperature and a dramatic decrease in electrical resistivity at 623 K due to a structural phase transition, which leads to a large enhancement in both thermoelectric power factor and thermoelectric figure of merit at 823 K. Introducing point defects via isoelectronic substitutions can be an effective means of reducing thermal conductivity and enhancing thermoelectric performance. We present a study of the effects of Sn substitution for Ge on the electrical and thermal transport properties of Ge4SbTe5.

  14. Fluxless eutectic bonding of GaAs-on-Si by using Ag/Sn solder

    NASA Astrophysics Data System (ADS)

    Eo, Sung-Hwa; Kim, Dae-Seon; Jeong, Ho-Jung; Jang, Jae-Hyung

    2013-11-01

    Fluxless GaAs-on-Si wafer bonding using Ag/Sn solder was investigated to realize uniform and void-free heterogeneous material integration. The effects of the diffusion barrier, Ag/Sn thickness, and Ar plasma treatment were studied to achieve the optimal fluxless bonding process. Pt on a GaAs wafer and Mo on a Si wafer act as diffusion barriers by preventing the flow of Ag/Sn solder into both the wafers. The bonding strength is closely related to the Ag/Sn thickness and Ar plasma treatment. A shear strength test was carried out to investigate the bonding strength. Under identical bonding conditions, the Ag/Sn thickness was optimized to achieve higher bonding strength and to avoid the formation of voids due to thermal stress. An Ar plasma pretreatment process improved the bonding strength because the Ar plasma removed carbon contaminants and metal-oxide bonds from the metal surface.

  15. Unusual magnetic hysteresis and the weakened transition behavior induced by Sn substitution in Mn{sub 3}SbN

    SciTech Connect

    Sun, Ying; Guo, Yanfeng; Li, Jun; Wang, Xia; Tsujimoto, Yoshihiro; Wang, Cong; Feng, Hai L.; Sathish, Clastin I.; Yamaura, Kazunari; Matsushita, Yoshitaka

    2014-01-28

    Substitution of Sb with Sn was achieved in ferrimagnetic antiperovskite Mn{sub 3}SbN. The experimental results indicate that with an increase in Sn concentration, the magnetization continuously decreases and the crystal structure of Mn{sub 3}Sb{sub 1-x}Sn{sub x}N changes from tetragonal to cubic phase at around x of 0.8. In the doping series, step-like anomaly in the isothermal magnetization was found and this behavior was highlighted at x = 0.4. The anomaly could be attributed to the magnetic frustration, resulting from competition between the multiple spin configurations in the antiperovskite lattice. Meantime, H{sub c} of 18 kOe was observed at x = 0.3, which is probably the highest among those of manganese antiperovskite materials reported so far. With increasing Sn content, the abrupt change of resistivity and the sharp peak of heat capacity in Mn{sub 3}SbN were gradually weakened. The crystal structure refinements indicate the weakened change at the magnetic transition is close related to the change of c/a ratio variation from tetragonal to cubic with Sn content. The results derived from this study indicate that the behavior of Mn{sub 3}Sb{sub 1-x}Sn{sub x}N could potentially enhance its scientific and technical applications, such as spin torque transfer and hard magnets.

  16. Thermoelectric properties of AgSbTe₂ from first-principles calculations

    SciTech Connect

    Rezaei, Nafiseh; Akbarzadeh, Hadi; Hashemifar, S. Javad

    2014-09-14

    The structural, electronic, and transport properties of AgSbTe₂ are studied by using full-relativistic first-principles electronic structure calculation and semiclassical description of transport parameters. The results indicate that, within various exchange-correlation functionals, the cubic Fd3⁻m and trigonal R3⁻m structures of AgSbTe₂ are more stable than two other considered structures. The computed Seebeck coefficients at different values of the band gap and carrier concentration are accurately compared with the available experimental data to speculate a band gap of about 0.1–0.35 eV for AgSbTe₂ compound, in agreement with our calculated electronic structure within the hybrid HSE (Heyd-Scuseria-Ernzerhof) functional. By calculating the semiclassical Seebeck coefficient, electrical conductivity, and electronic part of thermal conductivity, we present the theoretical upper limit of the thermoelectric figure of merit of AgSbTe₂ as a function of temperature and carrier concentration.

  17. Natural nanostructure and superlattice nanodomains in AgSbTe{sub 2}

    SciTech Connect

    Carlton, Christopher E.; De Armas, Ricardo; Shao-Horn, Yang E-mail: shaohorn@mit.edu; Ma, Jie; May, Andrew F.; Delaire, Olivier E-mail: shaohorn@mit.edu

    2014-04-14

    AgSbTe{sub 2} has long been of interest for thermoelectric applications because of its favorable electronic properties and its low lattice thermal conductivity of ∼0.7 W/mK. In this work, we report new findings from a high-resolution transmission electron microscopy study revealing two nanostructures in single crystal Ag{sub 1−x}Sb{sub 1+x}Sb{sub 2+x} (with x = 0, 0.1, 0.2); (i) a rippled natural nanostructure with a period of ∼2.5–5 nm and (ii) superlattice ordered nanodomains consistent with cation ordering predicted in previous density functional theory studies. These nanostructures, combined with point-defects, probably serve as sources of scattering for phonons, thereby yielding a low lattice thermal conductivity over a wide temperature range.

  18. Suitable Thicknesses of Base Metal and Interlayer, and Evolution of Phases for Ag/Sn/Ag Transient liquid-phase Joints Used for Power Die Attachment

    NASA Astrophysics Data System (ADS)

    Li, J. F.; Agyakwa, P. A.; Johnson, C. M.

    2014-04-01

    Real Si insulated gate bipolar transistors with conventional Ni/Ag metallization and dummy Si chips with thickened Ni/Ag metallization have both been bonded, at 250°C for 0 min, 40 min, and 640 min, to Ag foil electroplated with 2.7 µm and 6.8 µm thick Sn as an interlayer. On the basis of characterization of the microstructure of the resulting joints, suitable thicknesses are suggested for the Ag base metal and the Sn interlayer for Ag/Sn/Ag transient liquid-phase (TLP) joints used for power die attachment. The diffusivities of Ag and Sn in the ξAg phase were also obtained. In combination with the kinetic constants of Ag3Sn growth and diffusivities of Ag and Sn in Ag reported in the literature, the diffusivities of Ag and Sn in the ξAg phase were also used to simulate and predict diffusion-controlled growth and evolution of the phases in Ag/Sn/Ag TLP joints during extended bonding and in service.

  19. Preparation and Sintering Properties of Ag27Cu2Sn Nanopaste as Die Attach Material

    NASA Astrophysics Data System (ADS)

    Liu, Xiaojian; Liu, Wei; Wang, Chunqing; Zheng, Zhen; Kong, Lingchao

    2016-10-01

    Ag27Cu2Sn nanopaste has been prepared by mixing Ag, Cu, and Sn nanoparticles with an organic solvent system. Sintering and mechanical properties of this nanopaste were characterized and investigated. Effects of sintering temperature and time on the sintered microstructure of the nanopaste and shear strength of Cu/Ag27Cu2Sn/Cu structure were analyzed. The results showed that the organic shells coated on the outside of metal nanoparticles could effectively prevent metal nanoparticles from being oxidized below 480°C. When the paste was sintered at 480°C without pressure, few voids or large particles formed within the sintered layer and distributions of Ag, Cu, and Sn were quite uniform. This sintering temperature was much lower than the eutectic temperature (779°C) of Ag-Cu bulk material. Moreover, mutual solid solubilities of Ag and Cu were increased remarkably, which may be caused by high surface activity of Ag and Cu nanoparticles and the important role of the Sn addition. Shear strength of samples with Cu/Ag27Cu2Sn/Cu structure could reach 21 MPa, which could compare with that of Ag nanopaste or conductive adhesives.

  20. Disruption of crystalline structure of Sn3.5Ag induced by electric current

    NASA Astrophysics Data System (ADS)

    Huang, Han-Chie; Lin, Kwang-Lung; Wu, Albert T.

    2016-03-01

    This study presented the disruption of the Sn and Ag3Sn lattice structures of Sn3.5Ag solder induced by electric current at 5-7 × 103 A/cm2 with a high resolution transmission electron microscope investigation and electron diffraction analysis. The electric current stressing induced a high degree of strain on the alloy, as estimated from the X-ray diffraction (XRD) peak shift of the current stressed specimen. The XRD peak intensity of the Sn matrix and the Ag3Sn intermetallic compound diminished to nearly undetectable after 2 h of current stressing. The electric current stressing gave rise to a high dislocation density of up to 1017/m2. The grain morphology of the Sn matrix became invisible after prolonged current stressing as a result of the coalescence of dislocations.

  1. Preparation and photocatalytic properties of AgI–SnO{sub 2} nano-composites

    SciTech Connect

    Wen, Biao; Wang, Xiao-Hui; Lu, Juan; Cao, Jia-Lei; Wang, Zuo-Shan

    2013-05-15

    Highlights: ► AgI–SnO{sub 2} nano-composites have been successfully synthesized. ► As-prepared AgI–SnO{sub 2} nano-composites own the excellent visible light photocatalytic activity. ► As-prepared AgI–SnO{sub 2} nano-composites own the excellent stability. - Abstract: AgI doped SnO{sub 2} nano-composites were prepared by the chemical coprecipitation method and were characterized by the X-ray diffraction, transmission electron microscopy and X-ray photoelectron spectroscopy. Results showed that main of the I{sup −} ions remained in the AgI lattice which is highly dispersed in the system. The photo-catalytic experiments performed under visible light irradiation using methylene blue as the pollutant revealed that not only the photo-catalytic activity but also the stability of SnO{sub 2} based photocatalyst could be improved by introduction of an appropriate amount of AgI, and the result was further supported by the UV–Vis diffuse reflection spectra and the electron spin-resonance spectra. Among all of the samples, AgI–SnO{sub 2} nano-composite with 2At% AgI exhibited the best catalytic efficiency and stability.

  2. Analysis of the Influence of Thermal Treatment on the Stability of Ag1-xSb1+xTe2+x and Se-Doped AgSbTe2

    NASA Astrophysics Data System (ADS)

    Wyzga, P. M.; Wojciechowski, K. T.

    2016-03-01

    In order to systematize the knowledge on thermodynamic stability and thermoelectric properties of AgSbTe2-based alloys, several experiments examining the influence of thermal treatment on their structural and thermoelectric properties were performed. Samples with a nominal composition of AgSbTe2 and AgSbTe1.98Se0.02 were prepared and then annealed in various temperature conditions. It was confirmed that Ag1-xSb1+xTe2+x ( β phase) is the only thermodynamically stable ternary compound in the Ag2Te-Sb2Te3 pseudobinary system. It was also proved that thermal stability of β phase is limited—it slowly decomposes below 633 K. In contrast to some reports, it was also indicated that a small amount of Se does not lead to stabilisation of AgSbTe2 crystal structure. Despite slow kinetics of the decomposition processes, thermoelectric properties of the material are notably affected by thermal treatment and amount of Ag2Te precipitations. Maximal ZT value of prepared materials varies from 0.65 at 575 K to 1.07 at 563 K.

  3. Controlling SEI Formation on SnSb-Porous Carbon Nanofibers for Improved Na Ion Storage

    SciTech Connect

    Ji, Liwen; Gu, Meng; Shao, Yuyan; Li, Xiaolin; Engelhard, Mark H.; Arey, Bruce W.; Wang, Wei; Nie, Zimin; Xiao, Jie; Wang, Chong M.; Zhang, Jiguang; Liu, Jun

    2014-05-14

    Porous carbon nanofiber (CNF)-supported tin-antimony (SnSb) alloys is synthesized and applied as sodium ion battery anode. The chemistry and morphology of the solid electrolyte interphase (SEI) film and its correlation with the electrode performance are studied. The addition of fluoroethylene carbonate (FEC) in electrolyte significantly reduces electrolyte decomposition and creates a very thin and uniform SEI layer on the cycled electrode surface which could promote the kinetics of Na-ion migration/transportation, leading to excellent electrochemical performance.

  4. Thermoelectric performance of half-Heusler compounds TiNiSn and TiCoSb

    NASA Astrophysics Data System (ADS)

    Wang, L. L.; Miao, L.; Wang, Z. Y.; Wei, W.; Xiong, R.; Liu, H. J.; Shi, J.; Tang, X. F.

    2009-01-01

    The electronic structures of half-Heusler compounds TiNiSn and TiCoSb are investigated by using the full-potential linearized augmented plane-wave method. When the spin-orbital coupling is included in the calculations, there is only a slight change in the energy band structures. The transport coefficients (Seebeck coefficient, electrical conductivity, and power factor) are then calculated within the Boltzmann theory, and further evaluated as a function of chemical potential assuming a rigid band picture. Our calculations offer a valuable insight on how to improve the thermoelectric performance of these two compounds.

  5. Elemental topological insulator with tunable Fermi level: strained α-Sn on InSb(001).

    PubMed

    Barfuss, A; Dudy, L; Scholz, M R; Roth, H; Höpfner, P; Blumenstein, C; Landolt, G; Dil, J H; Plumb, N C; Radovic, M; Bostwick, A; Rotenberg, E; Fleszar, A; Bihlmayer, G; Wortmann, D; Li, G; Hanke, W; Claessen, R; Schäfer, J

    2013-10-11

    We report on the epitaxial fabrication and electronic properties of a topological phase in strained α-Sn on InSb. The topological surface state forms in the presence of an unusual band order not based on direct spin-orbit coupling, as shown in density functional and GW slab-layer calculations. Angle-resolved photoemission including spin detection probes experimentally how the topological spin-polarized state emerges from the second bulk valence band. Moreover, we demonstrate the precise control of the Fermi level by dopants. PMID:24160626

  6. Elemental Topological Insulator with Tunable Fermi Level: Strained α-Sn on InSb(001)

    NASA Astrophysics Data System (ADS)

    Barfuss, A.; Dudy, L.; Scholz, M. R.; Roth, H.; Höpfner, P.; Blumenstein, C.; Landolt, G.; Dil, J. H.; Plumb, N. C.; Radovic, M.; Bostwick, A.; Rotenberg, E.; Fleszar, A.; Bihlmayer, G.; Wortmann, D.; Li, G.; Hanke, W.; Claessen, R.; Schäfer, J.

    2013-10-01

    We report on the epitaxial fabrication and electronic properties of a topological phase in strained α-Sn on InSb. The topological surface state forms in the presence of an unusual band order not based on direct spin-orbit coupling, as shown in density functional and GW slab-layer calculations. Angle-resolved photoemission including spin detection probes experimentally how the topological spin-polarized state emerges from the second bulk valence band. Moreover, we demonstrate the precise control of the Fermi level by dopants.

  7. Spin pumping and inverse Rashba-Edelstein effect in NiFe/Ag/Bi and NiFe/Ag/Sb

    SciTech Connect

    Zhang, Wei Jungfleisch, Matthias B.; Jiang, Wanjun; Pearson, John E.; Hoffmann, Axel

    2015-05-07

    The Rashba effect is an interaction between the spin and the momentum of electrons induced by the spin-orbit coupling in surface or interface states. We measured the inverse Rashba-Edelstein effect via spin pumping in Ag/Bi and Ag/Sb interfaces. The spin current is injected from the ferromagnetic resonance of a NiFe layer towards the Rashba interfaces, where it is further converted into a charge current. Using spin pumping theory, we quantify the conversion parameter of spin to charge current to be 0.11 ± 0.02 nm for Ag/Bi and a factor of ten smaller for Ag/Sb. The relative strength of the effect is in agreement with spectroscopic measurements and first principles calculations. We also vary the interlayer materials to study the voltage output in relation to the change of the effective spin mixing conductance. The spin pumping experiment offers a straight-forward approach of using spin current as an efficient probe for detecting interface Rashba splitting.

  8. Monodisperse AgSbS2 nanocrystals: size-control strategy, large-scale synthesis, and photoelectrochemistry.

    PubMed

    Zhou, Bin; Li, Mingrun; Wu, Yihui; Yang, Chi; Zhang, Wen-Hua; Li, Can

    2015-07-27

    We report an efficient approach to the synthesis of AgSbS2 nanocrystals (NCs) by colloidal chemistry. The size of the AgSbS2 NCs can be tuned from 5.3 to 58.3 nm with narrow size distributions by selection of appropriate precursors and fine control of the experimental conditions. Over 15 g of high-quality AgSbS2 NCs can be obtained from one single reaction, indicative of the up-scalability of the present synthesis. The resulting NCs display strong absorptions in the visible-to-NIR range and exceptional air stability. The photoelectrochemical measurements indicate that, although the pristine AgSbS2 NC electrodes generate a cathodic photocurrent with a relatively small photocurrent density and poor stability, both of them can be significantly improved subject to CdS surface modification, showing promise in solar energy conversion applications.

  9. Electrochemical Degradation of Rhodamine B over Ti/SnO2-Sb Electrode.

    PubMed

    Maharana, Dusmant; Niu, Junfeng; Gao, Ding; Xu, Zesheng; Shi, Jianghong

    2015-04-01

    Electrochemical degradation of rhodamine B (C28H31ClN2O3) over Ti/SnO2-Sb anode was investigated in a rectangular cell. The degradation reaction follows pseudo-first-order kinetics. The degradation efficiency of rhodamine B attained >90.0% after 20 minutes of electrolysis at initial concentrations of 5 to 200 mg/L at a constant current density of 20 mA/cm2 with a 10 mmol/L Na2SO4 supporting electrolyte solution. Rhodamine B (50 mg/L) degradation and total organic carbon (TOC) removal ratio achieved 99.9 and 86.7%, respectively, at the optimal conditions after 30 minutes of electrolysis. The results showed that the energy efficiency of rhodamine B (50 mg/L) degradation at the optimal current densities from 2 to 30 mA/cm2 were 23.2 to 84.6 Wh/L, whereas the electrolysis time for 90% degradation of rhodamine B with Ti/SnO2-Sb anode was 36.6 and 7.3 minutes, respectively. The electrochemical method can be an advisable option for the treatment of dyes such as rhodamine B in wastewater. PMID:26462074

  10. Structural, elastic, electronic, and thermodynamic properties of MgAgSb investigated by density functional theory

    NASA Astrophysics Data System (ADS)

    Wang, Jun-Fei; Fu, Xiao-Nan; Zhang, Xiao-Dong; Wang, Jun-Tao; Li, Xiao-Dong; Jiang, Zhen-Yi

    2016-08-01

    The structural, elastic, electronic, and thermodynamic properties of thermoelectric material MgAgSb in γ,β,α phases are studied with first-principles calculations based on density functional theory. The optimized lattice constants accord well with the experimental data. According to the calculated total energy of the three phases, the phase transition order is determined from α to γ phase with cooling, which is in agreement with the experimental result. The physical properties such as elastic constants, bulk modulus, shear modulus, Young’s modulus, Poisson’s ratio, and anisotropy factor are also discussed and analyzed, which indicates that the three structures are mechanically stable and each has a ductile feature. The Debye temperature is deduced from the elastic properties. The total density of states (TDOS) and partial density of states (PDOS) of the three phases are investigated. The TDOS results show that the γ phase is most stable with a pseudogap near the Fermi level, and the PDOS analysis indicates that the conduction band of the three phases is composed mostly of Mg-3s, Ag-4d, and Sb-5p. In addition, the changes of the free energy, entropy, specific heat, thermal expansion of γ-MgAgSb with temperature are obtained successfully. The obtained results above are important parameters for further experimental and theoretical tuning of doped MgAgSb as a thermoelectric material at high temperature. Project supported by the National Natural Science Foundation of China (Grant No. 11504088), the Fund from Henan University of Technology, China (Grant Nos. 2014YWQN08 and 2013JCYJ12), the Natural Science Fund from the Henan Provincial Education Department, China (Grant No. 16A140027), the Natural Science Foundation of Shaanxi Province of China (Grant Nos. 2013JQ1018 and 15JK1759), and the Science Foundation of Northwest University of China (Grant No. 14NW23).

  11. Structural, elastic, electronic, and thermodynamic properties of MgAgSb investigated by density functional theory

    NASA Astrophysics Data System (ADS)

    Wang, Jun-Fei; Fu, Xiao-Nan; Zhang, Xiao-Dong; Wang, Jun-Tao; Li, Xiao-Dong; Jiang, Zhen-Yi

    2016-08-01

    The structural, elastic, electronic, and thermodynamic properties of thermoelectric material MgAgSb in γ,β,α phases are studied with first-principles calculations based on density functional theory. The optimized lattice constants accord well with the experimental data. According to the calculated total energy of the three phases, the phase transition order is determined from α to γ phase with cooling, which is in agreement with the experimental result. The physical properties such as elastic constants, bulk modulus, shear modulus, Young’s modulus, Poisson’s ratio, and anisotropy factor are also discussed and analyzed, which indicates that the three structures are mechanically stable and each has a ductile feature. The Debye temperature is deduced from the elastic properties. The total density of states (TDOS) and partial density of states (PDOS) of the three phases are investigated. The TDOS results show that the γ phase is most stable with a pseudogap near the Fermi level, and the PDOS analysis indicates that the conduction band of the three phases is composed mostly of Mg-3s, Ag-4d, and Sb-5p. In addition, the changes of the free energy, entropy, specific heat, thermal expansion of γ-MgAgSb with temperature are obtained successfully. The obtained results above are important parameters for further experimental and theoretical tuning of doped MgAgSb as a thermoelectric material at high temperature. Project supported by the National Natural Science Foundation of China (Grant No. 11504088), the Fund from Henan University of Technology, China (Grant Nos. 2014YWQN08 and 2013JCYJ12), the Natural Science Fund from the Henan Provincial Education Department, China (Grant No. 16A140027), the Natural Science Foundation of Shaanxi Province of China (Grant Nos. 2013JQ1018 and 15JK1759), and the Science Foundation of Northwest University of China (Grant No. 14NW23).

  12. Current-perpendicular-to-the-plane giant magnetoresistance in spin-valves with AgSn alloy spacers

    SciTech Connect

    Read, J. C.; Nakatani, T. M.; Smith, Neil; Choi, Y.-S.; York, B. R.; Brinkman, E.; Childress, J. R.

    2015-07-28

    We investigate the use of AgSn alloys as the spacer layer in current-perpendicular-to-the-plane magnetoresistance devices. Alloying with Sn increases resistivity but results in a reasonably long (>10 nm) spin-diffusion length, so large magnetoresistance can be achieved with thin AgSn spacers. Compared to Ag thin films, AgSn forms smaller grain sizes, reduced roughness, and exhibits less interdiffusion upon annealing, resulting in decreased interlayer magnetic coupling in exchange biased spin-valves. AgSn also shows improved corrosion resistance compared to Ag, which is advantageous for nanofabrication, including magnetic recording head sensors. Combining a AgSn spacer with Co-based Heusler alloy ferromagnet in an exchange biased, polycrystalline trilayer thinner than 12 nm results in magnetoresistance values up to 15% at room temperature.

  13. Current-perpendicular-to-the-plane giant magnetoresistance in spin-valves with AgSn alloy spacers

    NASA Astrophysics Data System (ADS)

    Read, J. C.; Nakatani, T. M.; Smith, Neil; Choi, Y.-S.; York, B. R.; Brinkman, E.; Childress, J. R.

    2015-07-01

    We investigate the use of AgSn alloys as the spacer layer in current-perpendicular-to-the-plane magnetoresistance devices. Alloying with Sn increases resistivity but results in a reasonably long (>10 nm) spin-diffusion length, so large magnetoresistance can be achieved with thin AgSn spacers. Compared to Ag thin films, AgSn forms smaller grain sizes, reduced roughness, and exhibits less interdiffusion upon annealing, resulting in decreased interlayer magnetic coupling in exchange biased spin-valves. AgSn also shows improved corrosion resistance compared to Ag, which is advantageous for nanofabrication, including magnetic recording head sensors. Combining a AgSn spacer with Co-based Heusler alloy ferromagnet in an exchange biased, polycrystalline trilayer thinner than 12 nm results in magnetoresistance values up to 15% at room temperature.

  14. Temperature-dependent thermal expansion of cast and hot-pressed LAST (Pb-Sb-Ag-Te) thermoelectric materials

    SciTech Connect

    Ren, Fei; Hall, Bradley D.; Case, Eldon D; Timm, Edward J; Trejo, Rosa M; Meisner, Roberta Ann; Lara-Curzio, Edgar

    2009-01-01

    The thermal expansion for two compositions of cast and hot-pressed LAST (Pb Sb Ag Te) n-type thermoelectric materials has been measured between room temperature and 673K via thermomechanical analysis (TMA). In addition, using high-temperature X-ray diffraction (HT-XRD), the thermal expansion for both cast and hot-pressed LAST materials was determined from the temperature-dependent lattice parameters measured between room temperature and 623 K. The TMA and HT-XRD determined values of the coefficient of thermal expansion (CTE) for the LAST compositions ranged between 20106K1 and 24106K1, which is comparable to the CTE values for other thermoelectric materials including PbTe and Bi2Te3. The CTE of the LAST specimens with a higher Ag content (Ag0.86Pb19Sb1.0Te20) exhibited a higher CTE value than that of the LAST material with a lower Ag content (Ag0.43Pb18Sb1.2Te20). In addition, a peak in the temperature-dependent CTE was observed between room temperature and approximately 450K for both the cast and hot-pressed LAST with the Ag0.86Pb19Sb1.0Te20 composition, whereas the CTE of the Ag0.43Pb18Sb1.2Te20 specimen increased monotonically with temperature.

  15. Evaluation of first crystallization in amorphous Ag-added Ag5.5In6.5Sb59Te29 thin films

    NASA Astrophysics Data System (ADS)

    Song, Ki-Ho; Seo, Jae-Hee; Kim, Jun-Hyong; Lee, Hyun-Yong

    2009-12-01

    In this article, several experimental results were reported for the evaluation of the first crystallization speed (v1st) on the nanosecond time scale as well as the material characteristics of the Ag-added Ag-In-Sb-Te films. The (Ag)x(Ag5.5In6.5Sb59Te29)1-x (x=0, 0.1, and 0.2) films were prepared by thermal evaporation and their phase transformation from an amorphous state to a hexagonal structure via a stable fcc structure was confirmed using x-ray diffraction. Some differences were measured in the optical transmittance (TOP) and absorption between the amorphous and crystalline films in the wavelength (λ) range of 800-3000 nm using an UV-visible-IR spectrophotometer. The v1st values, evaluated using nanopulse reflection response, slightly improved with an increase in the Ag content. For example, the nucleation time/average growth time ratio for the Ag5.5In6.5Sb59Te29 and Ag0.2(Ag5.5In6.5Sb59Te29)0.8 films were approximately 170 ns/70 ns and 110 ns/60 ns, respectively, for an illumination power of 7 mW.

  16. Polyol mediated synthesis of nanocrystalline M{sub 3}SbS{sub 3} (M=Ag, Cu)

    SciTech Connect

    Chen Di; Shen Guozhen; Tang Kaibin; Jiang Xuan; Huang Liying; Jin Yin; Qian Yitai

    2003-02-20

    A simple and convenient polyol-mediated route has been developed to produce nanocrystalline Ag{sub 3}SbS{sub 3} and Cu{sub 3}SbS{sub 3} from AgNO{sub 3} and Cu(NO{sub 3}){sub 2} and SbCl{sub 3} with thiourea at 197 deg. C. The products were characterized by X-ray powder diffraction, X-ray photoelectron spectroscopy, and transmission electron microscopy. Analysis shows that glycol agitated state and injection rate have a great effect on the purity of the final products.

  17. Electromigration of composite Sn-Ag-Cu solder bumps

    NASA Astrophysics Data System (ADS)

    Sharma, Ashutosh; Xu, Di Erick; Chow, Jasper; Mayer, Michael; Sohn, Heung-Rak; Jung, Jae Pil

    2015-11-01

    This study investigates the electromigration (EM) behavior of lead free Sn-Ag-Cu (SAC) solder alloys that were reinforced with different types of nanoparticles [Copper-coated carbon nanotubes (Cu/CNT), La2O3, Graphene, SiC, and ZrO2]. The composite solders were bumped on a Cu substrate at 220°C, and the resistance of the bumped solders was measured using a four wire setup. Current aging was carried out for 4 hours at a temperature of 160°C, and an increase in resistance was noted during this time. Of all the composite solders that were studied, La2O3 and SiC reinforced SAC solders exhibited the smallest resistances after current aging. However, the rate of change in the resistance at room temperature was lower for the SiC-reinforced SAC solder. The SAC and Graphene reinforced SAC solder bumps completely failed within 15 - 20 min of these tests. The SiC nanoparticles were reported to possibly entrap the SAC atoms better than other nanoparticles with a lower rate of EM. [Figure not available: see fulltext.

  18. High capacity, reversible alloying reactions in SnSb/C nanocomposites for Na-ion battery applications

    SciTech Connect

    Xiao, Lifen; Cao, Yuliang; Xiao, Jie; Wang, Wei; Kovarik, Libor; Nie, Zimin; Liu, Jun

    2012-01-01

    A new SnSb/C nanocomposite based on Na alloying reactions is demonstrated as anode for Na-ion battery applications. The electrode can achieve an exceptionally high capacity (544 mA h g-1, almost double that of intercalation carbon materials), good rate capacity and cyclability (80% capacity retention over 50 cycles) for Na-ion storage.

  19. A systematic study of superconductivity in BiPb(Sn)-Sb Sr-Ca-Cu-O systems

    NASA Technical Reports Server (NTRS)

    Akbar, Sheikh A.; Botelho, M. J.; Wong, M. S.; Alauddin, M.

    1990-01-01

    Superconducting transition above 160 K has been reported in the Bi-Pb-Sb-Sr-Ca-Cu-O system. Results of a systematic study emphasizing the correlations between the type and amount of dopant, and superconducting transition is presented. The effect of Sn (instead of Pb) substitution is also highlighted.

  20. Asymmetrical Precipitation of Ag3Sn Intermetallic Compounds Induced by Thermomigration of Ag in Pb-Free Microbumps During Solid-State Aging

    NASA Astrophysics Data System (ADS)

    Su, Yu-Ping; Wu, Chun-Sen; Ouyang, Fan-Yi

    2016-01-01

    Three-dimensional integrated circuit technology has become a major trend in electronics packaging in the microelectronics industry. To effectively remove heat from stacked integrated circuitry, a temperature gradient must be established across the chips. Furthermore, because of the trend toward higher device current density, Joule heating is more serious and temperature gradients across soldered joints are expected to increase. In this study we used heat-sink and heat-source devices to establish a temperature gradient across SnAg microbumps to investigate the thermomigration behavior of Ag in SnAg solder. Compared with isothermal conditions, small Ag3Sn particles near the hot end were dissolved and redistributed toward the cold end under a temperature gradient. The results indicated that temperature gradient-induced movement of Ag atoms occurred from the hot side toward the cold side, and asymmetrical precipitation of Ag3Sn resulted. The mechanism of growth of the intermetallic compound (IMC) Ag3Sn, caused by thermomigration of Ag, is discussed. The rate of growth Ag3Sn IMC at the cold side was found to increase linearly with solid-aging time under a temperature gradient. To understand the force driving Ag diffusion under the temperature gradient, the molar heat of transport ( Q*) of Ag in Sn was calculated as +13.34 kJ/mole.

  1. Thickness-Induced Metal-Insulator Transition in Sb-doped SnO2 Ultrathin Films: The Role of Quantum Confinement.

    PubMed

    Ke, Chang; Zhu, Weiguang; Zhang, Zheng; Tok, Eng Soon; Ling, Bo; Pan, Jisheng

    2015-01-01

    A thickness induced metal-insulator transition (MIT) was firstly observed in Sb-doped SnO2 (SnO2:Sb) epitaxial ultrathin films deposited on sapphire substrates by pulsed laser deposition. Both electrical and spectroscopic studies provide clear evidence of a critical thickness for the metallic conductivity in SnO2:Sb thin films and the oxidation state transition of the impurity element Sb. With the shrinkage of film thickness, the broadening of the energy band gap as well as the enhancement of the impurity activation energy was studied and attributed to the quantum confinement effect. Based on the scenario of impurity level pinning and band gap broadening in quantum confined nanostructures, we proposed a generalized energy diagram to understand the thickness induced MIT in the SnO2:Sb system.

  2. Thickness-Induced Metal-Insulator Transition in Sb-doped SnO2 Ultrathin Films: The Role of Quantum Confinement

    PubMed Central

    Ke, Chang; Zhu, Weiguang; Zhang, Zheng; Soon Tok, Eng; Ling, Bo; Pan, Jisheng

    2015-01-01

    A thickness induced metal-insulator transition (MIT) was firstly observed in Sb-doped SnO2 (SnO2:Sb) epitaxial ultrathin films deposited on sapphire substrates by pulsed laser deposition. Both electrical and spectroscopic studies provide clear evidence of a critical thickness for the metallic conductivity in SnO2:Sb thin films and the oxidation state transition of the impurity element Sb. With the shrinkage of film thickness, the broadening of the energy band gap as well as the enhancement of the impurity activation energy was studied and attributed to the quantum confinement effect. Based on the scenario of impurity level pinning and band gap broadening in quantum confined nanostructures, we proposed a generalized energy diagram to understand the thickness induced MIT in the SnO2:Sb system. PMID:26616286

  3. Infrared Polarizer Fabrication by Imprinting on Sb-Ge-Sn-S Chalcogenide Glass

    NASA Astrophysics Data System (ADS)

    Yamada, Itsunari; Yamashita, Naoto; Tani, Kunihiko; Einishi, Toshihiko; Saito, Mitsunori; Fukumi, Kouhei; Nishii, Junji

    2012-01-01

    We fabricated infrared wire-grid polarizers consisting of a 500-nm pitch Al grating on a low toxic chalcogenide glass (Sb-Ge-Sn-S system) using the direct imprinting of subwavelength grating followed by a deposition of Al metal by thermal evaporation. To fabricate the subwavelength grating on a chalcogenide glass more easily, the sharp grating was formed on the mold surface. The fabricated polarizer with Al thickness of 130 nm exhibited a polarization function with a transverse magnetic transmittance greater than 60% in the 5-9 µm wavelength range, and an extinction ratio greater than 20 dB in 3.5-11 µm wavelength range. The extinction ratio of the element with Al wires of 180-nm thickness reached 27 dB at 5.4-µm wavelength. The polarizer can be fabricated at lower costs and simpler fabrication processes compared to conventional infrared polarizers.

  4. Ultra-fast dry microwave preparation of SnSb used as negative electrode material for Li-ion batteries

    NASA Astrophysics Data System (ADS)

    Antitomaso, P.; Fraisse, B.; Sougrati, M. T.; Morato-Lallemand, F.; Biscaglia, S.; Aymé-Perrot, D.; Girard, P.; Monconduit, L.

    2016-09-01

    Tin antimonide alloy was obtained for the first time using a very simple dry microwave route. Up to 1 g of well crystallized SnSb can be easily prepared in 90 s under air in an open crucible. A full characterization by X-ray diffraction and 119Sn Mössbauer spectroscopy demonstrated the benefit of carbon as susceptor, which avoid any oxide contamination. The microwave-prepared SnSb was tested as negative electrode material in Li batteries. Interesting results in terms of capacity and rate capability were obtained with up to 700 mAh/g sustained after 50 cycles at variable current. These results pave the way for the introduction of microwave synthesis as realistic route for a rapid, low cost and up-scalable production of electrode material for Li batteries or other large scale application types.

  5. Observation of amorphous to crystalline phase transformation in Te substituted Sn-Sb-Se thin films

    SciTech Connect

    Chander, Ravi

    2015-05-15

    Thin films of Sn-Sb-Se-Te (8 ≤ x ≤ 14) chalcogenide system were prepared by thermal evaporation technique using melt quenched bulk samples. The as-prepared thin films were found amorphous as evidenced from X-ray diffraction studies. Resistivity measurement showed an exponential decrease with temperature upto critical temperature (transition temperature) beyond which a sharp decrease was observed and with further increase in temperature showed an exponential decrease in resistivity with different activation energy. The transition temperature showed a decreasing trend with tellurium content in the sample. The resistivity measurement during cooling run showed no abrupt change in resistivity. The resistivity measurements of annealed films did not show any abrupt change revealing the structural transformation occurring in the material. The transition width showed an increase with tellurium content in the sample. The resistivity ratio showed two order of magnitude improvements for sample with higher tellurium content. The observed transition temperature in this system was found quite less than already commercialized Ge-Sb-Te system for optical and electronic memories.

  6. First-principles study of homologous series of layered Bi-Sb-Te-Se and Sn-O structures

    NASA Astrophysics Data System (ADS)

    Govaerts, Kirsten

    In the first part of the thesis, we present a systematic study of the stable layered structures at T = 0 K for the Bi-Sb-Te-Se system by means of a combination of the Cluster Expansion (CE) method and first-principles electronic structure calculations. In order to account for the existence of long-periodic layered structures and the strong structural relaxations we have developed a one-dimensional CE with occupation variables explicitly accounting for the fact that Bi or Sb atoms are part of an even or odd number of layers. For the binary systems A1-xQx (A = Sb, Bi; Q = Te, Se) the resulting (meta)stable structures are the homologous series (A2) n(A2Q3)m built up from successive bilayers A 2 and quintuple units A2Q3. The Bi1-xSb x system is found to be an almost ideal solution. The CE for the ternary Bi-Sb-Te system not only reproduces the binary stable structures but also finds stable ternary layered compounds with an arbitrary stacking of Sb 2Te3, Bi2Te3 and Te-Bi-Te-Sb-Te quintuple units, optionally separated by mixed Bi/Sb bilayers. We also investigate the electronic properties of the newly found ground state structures, and in particular the effect of Bi bilayers on the electronic structure of the topological insulator Bi2Se3. Due to the charge transfer from the Bi bilayers to the quintuple layers, the top- and bottom-surface Dirac cones shift down in energy. Also the Rashba-split conduction band states shift down, resulting in a new Dirac cone. The bands of the additional Bi bilayer are just ordinary Rashba-split states originating from the dipole built up by the charge transfer. These results offer new insight in experimental results, where cones are not always correctly identified. In a second part of the thesis, we investigate the Sn-O system. First we show that a combination of current van der Waals-corrected functionals and many-body calculations within the GW approximation provide accurate values for both structural and electronic properties of Sn

  7. Ag/Ni Metallization Bilayer: A Functional Layer for Highly Efficient Polycrystalline SnSe Thermoelectric Modules

    NASA Astrophysics Data System (ADS)

    Park, Sang Hyun; Jin, Younghwan; Ahn, Kyunghan; Chung, In; Yoo, Chung-Yul

    2016-10-01

    The structural and electrical characteristics of Ag/Ni bilayer metallization on polycrystalline thermoelectric SnSe were investigated. Two difficulties with thermoelectric SnSe metallization were identified for Ag and Ni single layers: Sn diffusion into the Ag metallization layer and unexpected cracks in the Ni metallization layer. The proposed Ag/Ni bilayer was prepared by hot-pressing, demonstrating successful metallization on the SnSe surface without interfacial cracks or elemental penetration into the metallization layer. Structural analysis revealed that the Ni layer reacts with SnSe, forming several crystalline phases during metallization that are beneficial for reducing contact resistance. Detailed investigation of the Ni/SnSe interface layer confirms columnar Ni-Sn intermetallic phases [(Ni3Sn and Ni3Sn2) and Ni5.63SnSe2] that suppress Sn diffusion into the Ag layer. Electrical specific-contact resistivity (5.32 × 10-4 Ω cm2) of the Ag/Ni bilayer requires further modification for development of high-efficiency polycrystalline SnSe thermoelectric modules.

  8. Optical properties of amorphous and crystalline Sb-doped SnO2 thin films studied with spectroscopic ellipsometry: Optical gap energy and effective mass

    NASA Astrophysics Data System (ADS)

    So, Hyeon Seob; Park, Jun-Woo; Jung, Dae Ho; Ko, Kun Hee; Lee, Hosun

    2015-08-01

    We investigated the optical properties of amorphous and crystalline antimony (Sb)-doped tin dioxide (SnO2) thin films grown using the co-sputtering deposition method at room temperature. We used undoped and Sb-doped (8 wt. %) SnO2 targets. Varying the relative power ratio of the two targets, we controlled the Sb-composition of the SnO2:Sb thin films up to 2.3 at. % of Sb contents. Through annealing, the as-grown amorphous SnO2:Sb thin films were transformed to crystalline thin films. Dielectric functions were obtained from the measured ellipsometry angles, Ψ and Δ, using the Drude and parametric optical constant models. We determined the absorption coefficients and optical gap energies of the SnO2:Sb thin films from the dielectric functions. We found increasing optical gap energy with increasing Sb composition. Increases in the Drude tail amplitudes, a signature of free carrier concentrations, were found in annealed, crystalline thin films with increasing Sb composition. The increase in the optical gap energy with increasing Sb composition was mainly attributed to the Burstein-Moss effect. Using Hall effect measurements, we obtained Hall carrier concentrations (NHall) and electron Hall mobilities (μHall). The carrier concentrations and mobilities increased from 2.6 × 1019 cm-3 and 1.0 cm2/(V s) to 2.0 × 1020 cm-1 and 7.2 cm2/(V s), respectively, with increasing Sb contents. This result suggests that the nominally undoped SnO2 films are unintentionally n-type doped. Assuming that the NHall and optical carrier concentrations (Nopt) were the same, we obtained the effective masses of the SnO2:Sb thin films with increasing Sb compositions. The effective masses of the SnO2:Sb thin films increased from 0.245 m0 to 0.4 m0 with increasing Sb doping contents, and the nonparabolicity of the conduction band was estimated. We discussed the relation between the optical (μopt) and Hall (μHall) mobilities as a function of Sb contents and grain sizes.

  9. Optical properties of amorphous and crystalline Sb-doped SnO{sub 2} thin films studied with spectroscopic ellipsometry: Optical gap energy and effective mass

    SciTech Connect

    So, Hyeon Seob; Park, Jun-Woo; Jung, Dae Ho; Ko, Kun Hee; Lee, Hosun

    2015-08-28

    We investigated the optical properties of amorphous and crystalline antimony (Sb)-doped tin dioxide (SnO{sub 2}) thin films grown using the co-sputtering deposition method at room temperature. We used undoped and Sb-doped (8 wt. %) SnO{sub 2} targets. Varying the relative power ratio of the two targets, we controlled the Sb-composition of the SnO{sub 2}:Sb thin films up to 2.3 at. % of Sb contents. Through annealing, the as-grown amorphous SnO{sub 2}:Sb thin films were transformed to crystalline thin films. Dielectric functions were obtained from the measured ellipsometry angles, Ψ and Δ, using the Drude and parametric optical constant models. We determined the absorption coefficients and optical gap energies of the SnO{sub 2}:Sb thin films from the dielectric functions. We found increasing optical gap energy with increasing Sb composition. Increases in the Drude tail amplitudes, a signature of free carrier concentrations, were found in annealed, crystalline thin films with increasing Sb composition. The increase in the optical gap energy with increasing Sb composition was mainly attributed to the Burstein-Moss effect. Using Hall effect measurements, we obtained Hall carrier concentrations (N{sub Hall}) and electron Hall mobilities (μ{sub Hall}). The carrier concentrations and mobilities increased from 2.6 × 10{sup 19 }cm{sup −3} and 1.0 cm{sup 2}/(V s) to 2.0 × 10{sup 20 }cm{sup −1} and 7.2 cm{sup 2}/(V s), respectively, with increasing Sb contents. This result suggests that the nominally undoped SnO{sub 2} films are unintentionally n-type doped. Assuming that the N{sub Hall} and optical carrier concentrations (N{sub opt}) were the same, we obtained the effective masses of the SnO{sub 2}:Sb thin films with increasing Sb compositions. The effective masses of the SnO{sub 2}:Sb thin films increased from 0.245 m{sub 0} to 0.4 m{sub 0} with increasing Sb doping contents, and the nonparabolicity of the conduction band was estimated. We

  10. SnSb micron-sized particles for Li-ion batteries

    NASA Astrophysics Data System (ADS)

    Simonin, L.; Lafont, U.; Kelder, E. M.

    Micrometre-sized particles of Sn/SnSb were produced with a simple technique consisting in melting commercial ingots of tin and antimony separately at 280 °C and 680 °C, respectively, and casting them together in a ceramic boat. The solid alloy was then crushed into a homogeneous powder by grinding and sieving. The obtained powder was characterised by X-ray diffraction, and electron microscopy. Elemental and phase composition analyses were performed via, inductive coupled plasma and differential scanning calorimetry, respectively. The material was further tested as electrode material in a lithium galvanic cell. It showed relatively good capacity retention for at least 15 cycles. TEM analysis on post-mortem electrode samples showed the formation of nanostructures after the first discharge followed by a progressive disappearance of the micron-sized particles upon further cycling. Fading at higher cycles is explained by the formation of isolated metallic nano-particles that become inactive for further storage of lithium.

  11. Tunable solar-heat shielding property of transparent films based on mesoporous Sb-doped SnO₂ microspheres.

    PubMed

    Li, Yusheng; Liu, Jie; Liang, Jie; Yu, Xibin; Li, Dongjia

    2015-04-01

    In this paper, mesoporous antimony doped tin oxide (ATO) microspheres are synthesized via a solvothermal method from a methanol system with the surfactant followed by a thermal treatment process. Morphology studies reveal that the spherical products obtained by polyvinylpyrrolidone (PVP) templating result in a higher uniformity in size. Such obtained ATO microspheres with a secondary particle size ranging between 200 and 800 nm consist of packed tiny nanocrystals and have high specific surface area (∼98 m(2) g(-1)). The effect of Sb doping on the structural and electrical properties of SnO2 microspheres is studied. Because of the substitution of Sn(4+) with Sb(5+) accompanied by forming a shallow donor level close to the conduction band of SnO2, a lower resistivity of powder pellet can be achieved, which corresponds to the spectrally selective property of films. The application of ATO microspheres provides an example of transparent coatings; depending on Sb concentration in SnO2 and solid content of coatings, transparent films with tunable solar-heat shielding property are obtained. PMID:25774799

  12. Tunable solar-heat shielding property of transparent films based on mesoporous Sb-doped SnO₂ microspheres.

    PubMed

    Li, Yusheng; Liu, Jie; Liang, Jie; Yu, Xibin; Li, Dongjia

    2015-04-01

    In this paper, mesoporous antimony doped tin oxide (ATO) microspheres are synthesized via a solvothermal method from a methanol system with the surfactant followed by a thermal treatment process. Morphology studies reveal that the spherical products obtained by polyvinylpyrrolidone (PVP) templating result in a higher uniformity in size. Such obtained ATO microspheres with a secondary particle size ranging between 200 and 800 nm consist of packed tiny nanocrystals and have high specific surface area (∼98 m(2) g(-1)). The effect of Sb doping on the structural and electrical properties of SnO2 microspheres is studied. Because of the substitution of Sn(4+) with Sb(5+) accompanied by forming a shallow donor level close to the conduction band of SnO2, a lower resistivity of powder pellet can be achieved, which corresponds to the spectrally selective property of films. The application of ATO microspheres provides an example of transparent coatings; depending on Sb concentration in SnO2 and solid content of coatings, transparent films with tunable solar-heat shielding property are obtained.

  13. Structural and optical studies on AgSbSe{sub 2} thin films

    SciTech Connect

    Asokan, T. Namitha; Urmila, K. S.; Pradeep, B.

    2014-01-28

    AgSbSe{sub 2} semiconducting thin films are successfully deposited using reactive evaporation technique at a substrate temperature of 398K. X-ray diffraction studies reveal that the films are polycrystalline in nature. The structural parameters such as average particle size, dislocation density, and number of crystallites per unit have been evaluated. Atomic Force Microscopy is used to study the topographic characteristics of the film including the grain size and surface roughness. The silver antimony selenide thin films have high absorption coefficient of about 10{sup 5} cm{sup −1} and it has an indirect band gap of 0.64eV.

  14. Electrical and photoconductivity studies on AgSbSe2 thin films

    NASA Astrophysics Data System (ADS)

    Namitha Asokan, T.; Urmila, K. S.; Pradeep, B.

    2015-02-01

    Silver antimony selenide thin films have been deposited on ultrasonically cleaned glass substrate at a vacuum of 10-5 torr using reactive evaporation technique. The preparative parameters like substrate temperature and incident fluxes have been properly controlled in order to get highly reproducible compound films. The polycrystalline nature of the sample is confirmed using XRD. The dependence of the electrical conductivity on the temperature has also been studied. The prepared AgSbSe2 samples show p-type conductivity. The samples show a little photoresponse.

  15. Observation of Dirac-like band dispersion in LaAgSb2

    NASA Astrophysics Data System (ADS)

    Shi, X.; Richard, P.; Wang, Kefeng; Liu, M.; Matt, C. E.; Xu, N.; Dhaka, R. S.; Ristic, Z.; Qian, T.; Yang, Y.-F.; Petrovic, C.; Shi, M.; Ding, H.

    2016-02-01

    We present a combined angle-resolved photoemission spectroscopy (ARPES) and first-principles calculations study of the electronic structure of LaAgSb2 in the entire first Brillouin zone. We observe a Dirac-cone-like structure in the vicinity of the Fermi level formed by the crossing of two linear energy bands, as well as the nested segments of a Fermi surface pocket emerging from the cone. Our ARPES results show the close relationship of the Dirac cone to the charge-density-wave ordering, providing consistent explanations for exotic behaviors in this material.

  16. Comparative modular analysis of two complex sulfosalt structures: sterryite, Cu(Ag,Cu)3Pb19(Sb,As)22(As-As)S56, and parasterryite, Ag4Pb20(Sb,As)24S58.

    PubMed

    Moëlo, Yves; Guillot-Deudon, Catherine; Evain, Michel; Orlandi, Paolo; Biagioni, Cristian

    2012-10-01

    The crystal structures of two very close, but distinct complex minerals of the lead sulfosalt group have been solved: sterryite, Cu(Ag,Cu)(3)Pb(19)(Sb,As)(22)(As-As)S(56), and parasterryite, Ag(4)Pb(20)(Sb,As)(24)S(58). They are analyzed and compared according to modular analysis. The fundamental building block is a complex column centred on a Pb(6)S(12) triangular prismatic core, with two additional long and short arms. The main chemical and topological differences relate to the short arm, which induces a relative a/4 shift (~2 Å along the elongation parameter) of the constitutive rod layers, as illustrated by distinct cell settings within the same space group (P2(1)/n and P2(1)/c, respectively). Selection of the shortest (i.e. strongest) (Sb,As)-S bonds permitted to enhance the polymeric organization of (Sb,As) atoms with triangular pyramidal coordination. These two quasi-homeotypic structures are expanded derivatives of owyheeite, Ag(3)Pb(10)Sb(11)S(28). The hierarchy of organization levels from zero- to three-dimensional entities is subordinated to building operators, which appear as the driving force for the construction of such complex structures. Minor cations (Ag, Cu) or the As-As pair in sterryite secure the final locking, which favours the formation of one or the other compound. PMID:22992793

  17. Conductance quantization in an AgInSbTe-based memristor at nanosecond scale

    NASA Astrophysics Data System (ADS)

    Jiang, L.; Xu, L.; Chen, J. W.; Yan, P.; Xue, K. H.; Sun, H. J.; Miao, X. S.

    2016-10-01

    Quantized conductance was observed in a cation-migration-based memristor with the structure of Ag/AgInSbTe(AIST)/Ta. The conductance of the memristor exhibits stepwise increases in units of single quantum conductance (77.5 μS), which is attributed to the formation of a metal filament with an atomic contact of different integer multiples. We designed a high speed circuit to conduct the pulse measurement. The quantized conductance can be obtained by applying voltage pulses in intervals as fast as 3 ns with constant amplitude. Considering that the quantized conductance can be modulated by different pulse widths, our results suggest that the AIST-based memristor is a robust candidate for multi-level data storage and neuromorphic computing systems.

  18. The effect of intermetallic compound morphology on Cu diffusion in Sn-Ag and Sn-Pb solder bump on the Ni/Cu Under-bump metallization

    NASA Astrophysics Data System (ADS)

    Jang, Guh-Yaw; Duh, Jenq-Gong

    2005-01-01

    The eutectic Sn-Ag solder alloy is one of the candidates for the Pb-free solder, and Sn-Pb solder alloys are still widely used in today’s electronic packages. In this tudy, the interfacial reaction in the eutectic Sn-Ag and Sn-Pb solder joints was investigated with an assembly of a solder/Ni/Cu/Ti/Si3N4/Si multilayer structures. In the Sn-3.5Ag solder joints reflowed at 260°C, only the (Ni1-x,Cux)3Sn4 intermetallic compound (IMC) formed at the solder/Ni interface. For the Sn-37Pb solder reflowed at 225°C for one to ten cycles, only the (Ni1-x,Cux)3Sn4 IMC formed between the solder and the Ni/Cu under-bump metallization (UBM). Nevertheless, the (Cu1-y,Niy)6Sn5 IMC was observed in joints reflowed at 245°C after five cycles and at 265°C after three cycles. With the aid of microstructure evolution, quantitative analysis, and elemental distribution between the solder and Ni/Cu UBM, it was revealed that Cu content in the solder near the solder/IMC interface played an important role in the formation of the (Cu1-y,Niy)6Sn5 IMC. In addition, the diffusion behavior of Cu in eutectic Sn-Ag and Sn-Pb solders with the Ni/Cu UBM were probed and discussed. The atomic flux of Cu diffused through Ni was evaluated by detailed quantitative analysis in an electron probe microanalyzer (EPMA). During reflow, the atomic flux of Cu was on the order of 1016-1017 atoms/cm2sec in both the eutectic Sn-Ag and Sn-Pb systems.

  19. Effects of the crystallographic orientation of Sn on the electromigration of Cu/Sn-Ag-Cu/Cu ball joints

    SciTech Connect

    Lee, Kiju; Kim, Keun-Soo; Tsukada, Yutaka; Suganuma, Katsuaki; Yamanaka, Kimihiro; Kuritani, Soichi; Ueshima, Minoru

    2011-11-17

    Electromigration behavior and fast circuit failure with respect to crystallographic orientation of Sn grains were examined. The test vehicle was Cu/Sn-3.0 wt% Ag-0.5 wt% Cu/Cu ball joints, and the applied current density was 15 kA/cm2 at 160 °C. The experimental results indicate that most of the solder bumps show different microstructural changes with respect to the crystallographic orientation of Sn grains. Fast failure of the bump occurred due to the dissolution of the Cu circuit on the cathode side caused by the fast interstitial diffusion of Cu atoms along the c-axis of the Sn grains when the c-axis was parallel to the electron flow. Slight microstructural changes were observed when the c-axis was perpendicular to the electron flow. In addition, Cu6Sn5 intermetallic compound (IMC) was formed along the direction of the c-axis of the Sn grains instead of the direction of electron flow in all solder ball joints.

  20. Enhanced photoelectrochemical water splitting efficiency of a hematite-ordered Sb:SnO2 host-guest system.

    PubMed

    Wang, Lei; Palacios-Padrós, Anna; Kirchgeorg, Robin; Tighineanu, Alexei; Schmuki, Patrik

    2014-02-01

    Host-guest systems such as hematite/SnO2 have attracted a great deal of interest as photoanodes for photoelectrochemical water splitting. In the present work we form an ordered porous tin oxide layer formed by self-organizing anodization of Sn films on a FTO substrate. Subsequently the anodic tin oxide nanostructure is doped with antimony (ATO) by a simple impregnation and annealing treatment, and then decorated with hematite using anodic deposition. Photoelectrochemical water splitting experiments show that compared to conventional SnO2 nanostructures, using a Sb doped nanochannel SnO2 as a host leads to a drastic increase of the water splitting photocurrent response up to 1.5 mA cm(-2) at 1.6 V (vs. RHE) in 1 M KOH under AM 1.5 (100 mW cm(-2) ) conditions compared to 0.04 mA cm(-2) for the non-Sb doped SnO2 scaffold.

  1. High temperature magnetic order in Zn1‑x Mn x SnSb2+MnSb nanocomposite ferromagnetic semiconductors

    NASA Astrophysics Data System (ADS)

    Kilanski, L.; Górska, M.; Ślawska-Waniewska, A.; Lewińska, S.; Szymczak, R.; Dynowska, E.; Podgórni, A.; Dobrowolski, W.; Ralević, U.; Gajić, R.; Romčević, N.; Fedorchenko, I. V.; Marenkin, S. F.

    2016-08-01

    We present studies of structural, magnetic, and electrical properties of Zn1‑x Mn x SnSb2+MnSb nanocomposite ferromagnetic semiconductors with the average Mn-content, \\bar{x} , changing from 0.027 up to 0.138. The magnetic force microscope imaging done at room temperature shows the presence of a strong signal coming from MnSb clusters. Magnetic properties show the paramagnet-ferromagnet transition with the Curie temperature, T C, equal to about 522 K and the cluster-glass behavior with the transition temperature, T CG, equal to about 465 K, both related to MnSb clusters. The magnetotransport studies show that all investigated samples are p-type semiconductors with high hole concentration, p, changing from 1021 to 1022 cm‑3. A large increase in the resistivity as a function of the magnetic field is observed at T  <  10 K and small magnetic fields, |B|<100 mT, for all the studied samples with a maximum amplitude of the magnetoresistance about 460% at T  =  1.4 K. The large increase in the resistivity is most probably caused by the appearance of the superconducting state in the samples at T  <  4.3 K.

  2. A room temperature ethanol sensor made from p-type Sb-doped SnO2 nanowires.

    PubMed

    Wu, Jyh Ming

    2010-06-11

    A p-type ethanol sensor with a response time of approximately 8.3 s at room temperature was produced by SnO(2):Sb nanowires. The electrical properties of p-type SnO(2) nanowires are stable with a hole concentration of 1.544 x 10(17) cm(-3) and a field-effect mobility of 22 cm(2) V(-2) S(-1). X-ray photoelectron spectroscopy (XPS) and Hall measurement revealed that as-synthesized nanowires exhibit p-type behavior. A comprehensive investigation of the p-type sensing mechanism is reported.

  3. Thermoelectric properties of AgSbTe2 from first-principles calculations

    NASA Astrophysics Data System (ADS)

    Akbarzadeh, Hadi; Rezaei, Nafiseh; Hashemifar, S.; Esfarjani, Keivan

    2013-03-01

    Recently, novel thermoelectric materials are extensively investigated for providing sustainable energy resource. In this regard, AgSbTe2 as a p-type semiconductor is widely investigated due to its low lattice thermal conductivity and relatively large Seebeck coefficient. We study electronic, vibrational, and thermoelectric properties of FCC and rhombohedral structures of AgSbTe2 by first-principles calculations. The hybrid HSE03 functional is employed to correct wrong prediction of semimetal behavior in GGA and obtain a band gap of about 0.5 eV. The Seebeck coefficient, electrical conductivity, and electronic part of thermal conductivity are calculated by using a combination of maximally localized Wannier functions and semi-classical Boltzmann equation. By matching the calculated Seebeck coefficient with the experimental data, we predict the carrier concentration and band gap of several experimental samples. Our results indicate that the band gap and hole concentration of pure samples should be in the range of 0.2-0.5 eV and 2-5 × 1019 holes/cm3. Finally, we use the experimental electrical conductivity and the constant relaxation time assumption to estimate the relaxation time of this compound. This work was supported jointly by the Vice Chancellor for Research Affairs of Isfahan University of Technology, Center of Excellence for Applied Nanotechnology, and ICTP Affiliated Centre

  4. Measurement of the thermodynamic properties of saturated solid solutions of compounds in the Ag-Sn-Se system by the EMF method

    NASA Astrophysics Data System (ADS)

    Moroz, M. V.; Prokhorenko, M. V.

    2015-08-01

    The dependence of the EMF ( E) of galvanic cells Ag|AgI|Ag2GeS3 glass| D on temperature (where Ag, D denotes the electrodes of an electrochemical cell; D represents equilibrium two- and three-phase alloys of the Ag-Sn-Se system; and AgI|Ag2GeS3 glass is a bilayer membrane with purely ionic (Ag+) conductivity) is studied in the range of 480-580 K. Analytical equations of E( T) are used to calculate the values of the thermodynamic functions of saturated solid solutions of the SnSe, β-Ag2Se, AgSnSe2, and Ag8SnSe6 phases of the Ag-Sn-Se system in the standard state.

  5. Ag{sub 1.75}InSb{sub 5.75}Se{sub 11}: A new noncentrosymmetric compound with congruent-melting behavior

    SciTech Connect

    Hao, Wenyu; Han, Yemao; Huang, Rongjin; Feng, Kai; Yin, Wenlong; Yao, Jiyong; Wu, Yicheng

    2014-10-15

    A new type of quaternary selenide Ag{sub 1.75}InSb{sub 5.75}Se{sub 11} has been synthesized. It crystallizes in the non-centrosymmetric space group Cm of monoclinic system, with a=13.419 (1) Å, b=4.084 (1) Å, and c=19.165 (2) Å, Z=2. The compound has a new three-dimensional layer structure which consists of infinite {sup 2}{sub ∞}[AgSb{sub 2}Se{sub 4}] layers and {sup 2}{sub ∞}[Ag1(Sb6)Ag3InSb{sub 3}Se{sub 8}] layers. The band gap of Ag{sub 1.75}InSb{sub 5.75}Se{sub 11} is 0.94(2) eV, which agrees with its dark gray color. Moreover, the compound exhibits congruent-melting behavior. - Graphical abstract: Ag{sub 1.75}InSb{sub 5.75}Se{sub 11} has a new three-dimensional layer structure which consists of infinite {sup 2}{sub ∞}[AgSb{sub 2}Se{sub 4}] layers and {sup 2}{sub ∞}[Ag1(Sb6)Ag3InSb{sub 3}Se{sub 8}] layers. - Highlights: • The new quaternary selenide Ag{sub 1.75}InSb{sub 5.75}Se{sub 11} has been synthesized. • It crystallizes in non-centrosymmetric space group Cm and has a new layer structure. • The structure consists of {sup 2}{sub ∞}[AgSb{sub 2}Se{sub 4}] layers and {sup 2}{sub ∞}[Ag1(Sb6)Ag3InSb{sub 3}Se{sub 8}] layers. • The band gap of Ag{sub 1.75}InSb{sub 5.75}Se{sub 11} is 0.94(2) eV. • The compound exhibits congruent-melting behavior.

  6. Electrodeposition of SnSbCu Alloy on Copper from an Electrolyte with Varied Content of Antimony Chloride

    NASA Astrophysics Data System (ADS)

    Valeeva, A. Kh.; Valeev, I. Sh.

    2015-10-01

    The microstructure and chemical composition of electrodeposited alloys of the SnSbCu system with varied concentration of antimony chloride in the electrolyte have been investigated. It is shown that during electrodeposition mechanical-mixture alloys are not formed, but rather intermetallic compounds. It is found that increasing the concentration of antimony chloride in the electrolyte leads to a decrease in the tin content and cracking of the coating.

  7. Electrochemical degradation of nitrobenzene by anodic oxidation on the constructed TiO2-NTs/SnO2-Sb/PbO2 electrode.

    PubMed

    Chen, Yong; Li, Hongyi; Liu, Weijing; Tu, Yong; Zhang, Yaohui; Han, Weiqing; Wang, Lianjun

    2014-10-01

    The interlayer of Sb-doped SnO2 (SnO2-Sb) and TiO2 nanotubes (TiO2-NTs) on Ti has been introduced into the PbO2 electrode system with the aim to reveal the mechanism of enhanced electrochemical performance of TiO2-NTs/SnO2-Sb/PbO2 electrode. In contrast with the traditional Ti/SnO2-Sb/PbO2 electrode, the constructed PbO2 electrode has a more regular and compact morphology with better oriented crystals of lower size. The TiO2-NTs/SnO2-Sb interlayer prepared by electrodeposition process improves PbO2 coating structure effectively, and enhances the electrochemical performance of PbO2 electrode. Kinetic analyses indicated that the electrochemical oxidation of nitrobenzene on the PbO2 electrodes followed pseudo-first-order reaction, and mass transport was enhanced at the constructed electrode. The accumulation of nitrocompounds of degradation intermediates on constructed electrode was lower, and almost all of the nitro groups were eliminated from aromatic rings after 6h of electrolysis. Higher combustion efficiency was obtained on the constructed TiO2-NTs/SnO2-Sb/PbO2 electrode. The intermediates of nitrobenzene oxidation were confirmed by IC and GC/MS.

  8. The evolution of the magnetic phases of Sb-doped Mn{sub 5}Sn{sub 3} compounds

    SciTech Connect

    Xu, J. H.; Xia, Y. H.; Yang, W. Y.; Du, H. L.; Yang, J. B.; Wang, C. S.; Han, J. Z.; Liu, S. Q.; Yang, Y. C.

    2013-05-07

    The structural and magnetic properties of Mn{sub 5}(Sn{sub 1-x}Sb{sub x}){sub 3} compounds (x = 0-0.4) were investigated by means of X-ray diffraction and magnetization measurements. All samples crystallize in Ni{sub 2}In-type structure (P6{sub 3}/mmc) with the lattice parameters changing anisotropically with the increase of Sb concentration. Sb doping leads to the merging of the ferrimagnetic transition temperature T{sub c} and the re-entrant spin-glass transition temperature T{sub f}, indicating a direct transition from spin-glass state to paramagnetic state. The M(H) curve at 5 K evolves with x from a soft-magnet type to a linear-like shape. We proposed a basic explanation for the evolution of the magnetic properties in terms of crystal structure and magnetic interactions, which can be applied to other related compounds.

  9. Specific Heat and Electrical Transport Properties of Sn0.8Ag0.2Te Superconductor

    NASA Astrophysics Data System (ADS)

    Mizuguchi, Yoshikazu; Yamada, Akira; Higashinaka, Ryuji; Matsuda, Tatsuma D.; Aoki, Yuji; Miura, Osuke; Nagao, Masanori

    2016-10-01

    Sn0.8Ag0.2Te is a new superconductor with Tc ~ 2.4 K. The superconducting properties of Sn0.8Ag0.2Te have been investigated by specific heat measurements under magnetic fields. Bulk nature of superconductivity was confirmed from the amplitude of the specific heat jump at the superconducting transition, and the amplitude is consistent with fully-gapped superconductivity. Upper critical field was estimated from specific heat and electrical resistivity measurements under magnetic fields. The Hall coefficient was positive, suggesting that the Ag acts as a p-type dopant in Sn0.8Ag0.2Te.

  10. Spreading of Sn-Ag solders on FeNi alloys

    SciTech Connect

    Saiz, Eduardo; Hwang, C-W.; Suganuma, Katsuaki; Tomsia, Antoni P.

    2003-02-28

    The spreading of Sn-3Ag-xBi solders on Fe-42Ni has been studied using a drop transfer setup. Initial spreading velocities as fast as {approx}0.5 m/s have been recorded. The results are consistent with a liquid front moving on a metastable, flat, unreacted substrate and can be described by using a modified molecular-kinetic model for which the rate controlling step is the movement of one atom from the liquid to the surface of the solid substrate. Although the phase diagram predicts the formation of two Fe-Sn intermetallics at the solder/substrate interface in samples heated at temperatures lower than 513 C, after spreading at 250 C only a thin FeSn reaction layer could be observed. Two interfacial layers (FeSn and FeSn2) were found after spreading at 450 C.

  11. Zintl-phase compounds with SnSb4 tetrahedral anions. Electronic structure and thermoelectric properties

    SciTech Connect

    Zhang, Lijun; Du, Mao-Hua; Singh, David J.

    2010-02-22

    We report the investigation of Zintl-phase Na(K){sub 8}SnSb{sub 4} and related compounds that contain SnSb{sub 4} tetrahedral anions using first principles electronic structure, Boltzmann transport, and density functional phonon calculations. We find that these compounds are narrow-gap semiconductors and there is a combination of heavy and light bands at valence band edge, which may lead to a combination of high thermopower and reasonable conductivity. High values of the thermopower are found for p-type doping within the Boltzmann transport theory. Furthermore, these materials are expected to have low thermal conductivity due to their structures that consist of a network of weakly coupled SnSb{sub 4} clusters, which leads to low phonon frequencies. In particular, we find low-frequency optical phonons that should effectively scatter the heat-carrying acoustic phonons. These results are discussed in terms of the structure, which consists of anionic clusters. Based on the results, it is suggested that such compounds may represent a useful paradigm for finding new thermoelectric materials.

  12. Co(x)Ni(4-x)Sb(12-y)Sn(y) Ternary Skutterudites: Processing and Thermoelectric Properties

    NASA Technical Reports Server (NTRS)

    Mackey, Jon; Sehirlioglu, Alp; Dynys, Fred

    2014-01-01

    Skutterudites have proven to be a useful thermoelectric system as a result of their high figure of merit, favorable mechanical properties, and good thermal stability. Binary skutterudites have received the majority of interest in recent years, as a result of successful double and triple filling schemes. Ternary skutterudites, such as Ni4Sb7Sn5, also demonstrate good thermoelectric performance, with high power factor and low thermal conductivity. Ternary skutterudites, as contrasted to binary systems, provide more possibility for tuning electronic structure as substitutions can be studied on three elements. The Co(x)Ni(4-x)Sb(12-y)Sn(y) system has been investigated as both a p- and n-type thermoelectric material, stable up to 200 C. The system is processed through a combination of solidification, mechanical alloying, and hot pressing steps. Rietveld structure refinement has revealed an interesting occupancy of Sn on both the 24g Wyckoff position with Sb as well as the 2a position as a rattler. In addition to thermoelectric properties, detailed processing routes have been investigated on the system.

  13. Microstructural, optical and electrical investigations of Sb-SnO{sub 2} thin films deposited by spray pyrolysis

    SciTech Connect

    Gupta, Sushant; Yadav, B.C.; Dwivedi, Prabhat K.; Das, B.

    2013-09-01

    Highlights: • We controlled structural, morphological, electrical, optical and physical (such as band gap energy) properties by altering the Sb doping concentration. • Variation in bandgap with Sb concentration is in agreement with the Burstein–Moss hypothesis and this hypothesis was further confirmed by plotting E{sub g} vs n{sup 2/3}. • The resistivity and mobility are in the range of 1.512–6.624 × 10{sup −3} Ω cm and 9.75–22.96 cm{sup 2} V{sup −1} s{sup −1}. The e-density lies between 4.11 × 10{sup 19} and 4.24 × 10{sup 20} cm{sup −3}. • We observed that Sb substitution in SnO{sub 2} lattice decreases the crystallite size and the possible reason for this is the creation of Sb monolayer on the surface of SnO{sub 2} crystallite. - Abstract: The structural, optical and electrical properties of spray deposited antimony (Sb) doped tin oxide (SnO{sub 2}) thin films, prepared from SnCl{sub 4} precursor, have been studied as a function of antimony doping concentration. The doping concentration was varied from 0 to 1.5 wt.% of Sb. The analysis of X-ray diffraction patterns revealed that the as deposited doped and undoped tin oxide thin films are pure crystalline tetragonal rutile phase of tin oxide which belongs to the space group P4{sub 2}/mnm (number 136). The surface morphological examination with field emission scanning electron microscopy (FESEM) revealed the fact that the grains are closely packed and pores/voids between the grains are very few. The resistivity (ρ) and mobility (μ) are in the range of 1.512 × 10{sup −3}–6.624 × 10{sup −3} Ω cm and 9.75–22.96 cm{sup 2} V{sup −1} s{sup −1}. The electron density lies between 4.11 × 10{sup 19} and 4.24 × 10{sup 20} cm{sup −3}. A thorough electrical investigation reveals that the film's resistivity depends on carrier concentration. It is found that ionized impurity scattering is the dominant mechanism, which limits the mobility of the carriers. The transmittance spectra for

  14. Engineering study on TiSnSb-based composite negative electrode for Li-ion batteries

    NASA Astrophysics Data System (ADS)

    Wilhelm, H. A.; Marino, C.; Darwiche, A.; Soudan, P.; Morcrette, M.; Monconduit, L.; Lestriez, B.

    2015-01-01

    Micrometric TiSnSb is a promising negative electrode material for Li-ion batteries when formulated with carboxymethyl cellulose (CMC) binder and a mixture of carbon black and carbon nanofibers, and cycled in a fluoroethylene carbonate (FEC)-containing electrolyte. Here, other binder systems were evaluated, polyacrylic acid (PAAH) mixed with CMC, CMC in buffered solution at pH 3 and amylopectin. However CMC showed the better performance in terms of cycle life of the electrode. Whatever the binder, cycle life decreases with increasing the active mass loading, which is attributed to both the precipitation of liquid electrolyte degradation products and to the loss of electrical contacts within the composite electrode and with the current collector as a consequence of the active particles volume variations. Furthermore, calendaring the electrode unfortunately decreases the cycle life. The rate performance was studied as a function of the active mass loading and was shown to be determined by the electrode polarization resistance. Finally, full cells cycling tests with Li1Ni1/3Co1/3Mn1/3O2 at the positive electrode were done. 60% of the capacity is retained after 200 cycles at the surface capacity of 2.7 mAh cm-2.

  15. Electromigration Behaviors of Cu Reinforced Sn-3.5Ag Composite Solder Joints

    NASA Astrophysics Data System (ADS)

    Wang, Yan; Han, Jing; Ma, Limin; Zuo, Yong; Guo, Fu

    2016-09-01

    The composite approach, by incorporating small amounts of reinforcement particles in the solder matrix, has proven to be one of the effective ways to improve the reliability of solder joints. The effects of Cu addition on electromigration were investigated in this study by incorporating 2% volume fraction Cu particles into Sn-3.5Ag eutectic solder paste by the in situ process. The one-dimensional solder joints, designed to prevent the current crowding effect, were stressed under a constant current density of 104 A/cm2 at room temperature, and the temperature of the sample could reach 105 ± 5°C due to the Joule heating effect. Doping 2 vol.% Cu was found to retard the electromigration phenomenon effectively. After electric current stressing for 528 h, the growth rate of an interfacial intermetallic compound (IMC) layer at the anode decreased 73% in contrast to that of Sn-3.5Ag solder joints, and the IMC layer at the cathode was almost unchanged. The polarization effect of Cu reinforced composite solder joints was also apparently mitigated. In addition, the surface damage of the composite solder joints was relieved by incorporating 2 vol.% Cu particles. Compared to Sn-3.5Ag solder joints, which had protruded Cu6Sn5 and wrinkles of Sn-solder matrix on the surface, the solder joints with Cu addition had a more even surface.

  16. Thermoelectric device including an alloy of GeTe and AgSbTe as the P-type element

    DOEpatents

    Skrabek, Emanuel Andrew; Trimmer, Donald Smith

    1976-01-01

    Improved alloys suitable for thermoelectric applications and having the general formula: (AgSbTe.sub.2).sub.1.sub.-x + (GeTe).sub.x wherein x has a value of about 0.80 and 0.85, have been found to possess unexpectedly high thermoelectric properties such as efficiency index, as well as other improved physical properties.

  17. Reliability Investigations on SnAg Bumps on Substrate Pads with Different Pad Finish

    SciTech Connect

    Bauer, R.; Ebersberger, B.; Kupfer, C.; Alexa, L.

    2006-02-07

    SnAg solder bump is one bump type which is used to replace eutectic SnPb bumps. In this work tests have been done to characterize the reliability properties of this bump type. Electromigration (EM) tests, which were accelerated by high current and high temperature and high temperature storage (HTS) tests were performed. It was found that the reliability properties are sensitive to the material combinations in the interconnect stack. The interconnect stack includes substrate pad, pad finish, bump, underbump metallization (UBM) and the chip pad. Therefore separate test groups for SnAg bumps on Cu substrate pads with organic solderability preservative (OSP) finish and the identical bumps on pads with Ni/Au finish were used. In this paper the reliability test results and the corresponding failure analysis are presented. Some explanations about the differences in formation of intermetallic compounds (IMCs) are given.

  18. Internally consistent database for sulfides and sulfosalts in the system Ag 2S-Cu 2S-ZnS-Sb 2S 3-As 2S 3

    NASA Astrophysics Data System (ADS)

    Sack, Richard O.

    2000-11-01

    An updated thermodynamic database for Ag 2S-Cu 2S-ZnS-Sb 2S 3-As 2S 3 sulfides and sulfosalts applicable to temperatures above 119°C is developed to calculate phase relations for polybasite-pearceite- and fahlore-bearing assemblages. It is based on pre-existing and new constraints on activity-composition, Ag-Cu and As-Sb partitioning, and other relations, and on experiments (200-300°C, evacuated silica tubes) conducted to define the stability of the polybasite-pearceite [(Ag 1- x,Cu x) 16(Sb 1- y,As y) 2S 11] + ZnS sphalerite assemblage with respect to assemblages containing (Ag,Cu) 2S sulfides coexisting with (Cu, Ag) 10Zn 2(Sb,As) 4S 13 fahlore sulfosalts. It was found that the thermodynamics of mixing of bcc- and hcp-(Ag,Cu) 2S solutions, which are fast-ion conductors, may be described by using site multiplicities of metals α Ag,Cu > 2 and temperature-dependent regular solution parameters. We obtained estimates for the Gibbs energies of formation for Ag 16Sb 2S 11 and Cu 16Sb 2S 11 polybasite endmembers from the simple sulfides (Ag 2S, Cu 2S, and Sb 2S 3) of -30.79 and -4.07 kJ/gfw at 200°C, and -32.04 and -0.59 kJ/gfw at 400°C, respectively, that are about one half kJ/gfw more positive and about 6 kJ/gfw more negative than those estimated by Harlov and Sack (1995b). The corresponding estimates for formation energies of Ag 10Zn 2Sb 4S 13 and Cu 10Zn 2Sb 4S 13 fahlores (-20.29 and -105.29 kJ/gfw at 200°C and -23.72 and -105.76 kJ/gfw at 400°C) are comparable to, and roughly 110 kJ/gfw more positive than, the corresponding estimates of Ebel and Sack (1994). We also determined that the Gibbs energies of the As-Sb exchange reactions: 1/4Ag 10Zn2Sb4S13+1/2Ag 16As2S11=1/2Ag 16Sb2S11+1/4Ag 10Zn2As4S13Sb-fahlorepearceitepolybasiteAs-fahlore and Ag3SbS3+1/2Ag 16As2S11=1/2Ag 16Sb2S11+Ag3AsS3pyrargyritepearceitepolybasiteproustite are, respectively, 8.75 and 0.40 kJ/gfw in the range 150-350°C, and these predictions are consistent with As-Sb partitioning relations

  19. The role of Mott-Schottky heterojunctions in Ag-Ag8SnS6 as counter electrodes in dye-sensitized solar cells.

    PubMed

    He, Qingquan; Huang, Shoushuang; Wang, Cheng; Qiao, Qiquan; Liang, Na; Xu, Miao; Chen, Wenlong; Zai, Jiantao; Qian, Xuefeng

    2015-03-01

    Well-defined uniform pyramidal Ag-Ag8SnS6 heterodimers are prepared via a one-pot method. A plausible formation mechanism for the unique structures based on a seed-growth process and an etching effect due to oleylamine is proposed. The formed metal-semiconductor Mott-Schottky heterojunction promotes electron transfer from semiconducting Ag8 SnS6 to metallic Ag, which catalyzes the reduction of I3 (-) to I(-). When used as counter electrode in dye-sensitized solar cells, the heterodimers show comparable performance to platinum.

  20. Ternary eutectic growth of Ag-Cu-Sb alloy within ultrasonic field

    NASA Astrophysics Data System (ADS)

    Zhai, Wei; Hong, Zhenyu; Wei, Bingbo

    2007-08-01

    The liquid to solid transformation of ternary Ag42.4Cu21.6Sb36 eutectic alloy was accomplished in an ultrasonic field with a frequency of 35 kHz, and the growth mechanism of this ternary eutectic was examined. Theoretical calculations predict that the sound intensity in the liquid phase at the solidification interface increases gradually as the interface moves up from the sample bottom to its top. The growth mode of ( ɛ + θ + Sb) ternary eutectic exhibits a transition of “divorced eutectic—mixture of anomalous and regular structures—regular eutectic” along the sample axis due to the inhomogeneity of sound field distribution. In the top zone with the highest sound intensity, the cavitation effect promotes the three eutectic phases to nucleate independently, while the acoustic streaming efficiently suppresses the coupled growth of eutectic phases. In the meantime, the ultrasonic field accelerates the solute transportation at the solid-liquid interface, which reduces the solute solubility of eutectic phases.

  1. Viscosity of liquid Ag-In-Sb-Te: Evidence of a fragile-to-strong crossover.

    PubMed

    Orava, J; Weber, H; Kaban, I; Greer, A L

    2016-05-21

    The temperature-dependent viscosity η(T) is measured for the equilibrium liquid of the chalcogenide Ag-In-Sb-Te (AIST), the first time this has been reported for a material of actual interest for phase-change memory. The measurements, in the range 829-1254 K, are made using an oscillating-crucible viscometer, and show a liquid with high fragility and low viscosity, similar to liquid pure metals. Combining the high-temperature viscosity measurements with values inferred from crystal growth rates in the supercooled liquid allows the form of η(T) to be estimated over the entire temperature range from above the melting point down to the glass transition. It is then clear that η(T) for liquid AIST cannot be described with a single fragility value, unlike other phase-change chalcogenides such as liquid Ge-Sb-Te. There is clear evidence for a fragile-to-strong crossover on cooling liquid AIST, similar to that analyzed in Te85Ge15. The change in fragility associated with the crossover in both these cases is rather weak, giving a broad temperature range over which η(T) is near-Arrhenius. We discuss how such behavior may be beneficial for the performance of phase-change memory. Consideration of the fragile-to-strong crossover in liquid chalcogenides may be important in tuning compositions to optimize the device performance. PMID:27208954

  2. Viscosity of liquid Ag-In-Sb-Te: Evidence of a fragile-to-strong crossover

    NASA Astrophysics Data System (ADS)

    Orava, J.; Weber, H.; Kaban, I.; Greer, A. L.

    2016-05-01

    The temperature-dependent viscosity η(T) is measured for the equilibrium liquid of the chalcogenide Ag-In-Sb-Te (AIST), the first time this has been reported for a material of actual interest for phase-change memory. The measurements, in the range 829-1254 K, are made using an oscillating-crucible viscometer, and show a liquid with high fragility and low viscosity, similar to liquid pure metals. Combining the high-temperature viscosity measurements with values inferred from crystal growth rates in the supercooled liquid allows the form of η(T) to be estimated over the entire temperature range from above the melting point down to the glass transition. It is then clear that η(T) for liquid AIST cannot be described with a single fragility value, unlike other phase-change chalcogenides such as liquid Ge-Sb-Te. There is clear evidence for a fragile-to-strong crossover on cooling liquid AIST, similar to that analyzed in Te85Ge15. The change in fragility associated with the crossover in both these cases is rather weak, giving a broad temperature range over which η(T) is near-Arrhenius. We discuss how such behavior may be beneficial for the performance of phase-change memory. Consideration of the fragile-to-strong crossover in liquid chalcogenides may be important in tuning compositions to optimize the device performance.

  3. LED Die-Bonded on the Ag/Cu Substrate by a Sn-BiZn-Sn Bonding System

    NASA Astrophysics Data System (ADS)

    Tang, Y. K.; Hsu, Y. C.; Lin, E. J.; Hu, Y. J.; Liu, C. Y.

    2016-08-01

    In this study, light emitting diode (LED) chips were die-bonded on a Ag/Cu substrate by a Sn-BixZn-Sn bonding system. A high die-bonding strength is successfully achieved by using a Sn-BixZn-Sn ternary system. At the bonding interface, there is observed a Bi-segregation phenomenon. This Bi-segregation phenomenon solves the problems of the brittle layer-type Bi at the joint interface. Our shear test results show that the bonding interface with Bi-segregation enhances the shear strength of the LED die-bonding joints. The Bi-0.3Zn and Bi-0.5Zn die-bonding cases have the best shear strength among all die-bonding systems. In addition, we investigate the atomic depth profile of the deposited Bi-xZn layer by evaporating Bi-xZn E-gun alloy sources. The initial Zn content of the deposited Bi-Zn alloy layers are much higher than the average Zn content in the deposited Bi-Zn layers.

  4. Filled Co (sub X) Ni (sub 4-x) Sb (sub 12-y) Sn (sub Y) Skutterudites: Processing and Thermoelectric Properties

    NASA Technical Reports Server (NTRS)

    Mackey, Jon; Sehirlioglu, Alp; Dynys, Fred

    2015-01-01

    Skutterudites have proven to be a useful thermoelectric system as a result of their enhanced figure of merit (ZT1), cheap material cost, favorable mechanical properties, and good thermal stability. The majority of skutterudite interest in recent years has been focused on binary skutterudites like CoSb3 or CoAs3. Binary skutterudites are often double and triple filled, with a range of elements from the lanthanide series, in order to reduce the lattice component of thermal conductivity. Ternary and quaternary skutterudites, such as Co4Ge6Se6 or Ni4Sb8Sn4, provide additional paths to tune the electronic structure. The thermal conductivity can further be improved in these complex skutterudites by the introduction of fillers. The Co (sub X) Ni (sub 4-x) Sb (sub 12-y) Sn (sub Y) system has been investigated as both a p- and n-type thermoelectric material, and is stable up to 200 degrees Centigrade. Yb, Ce, and Dy fillers have been introduced into the skutterudite to study the influence of both the type and the quantity of fillers on processing conditions and thermoelectric properties. The system was processed through a multi-step technique that includes solidification, mechano-chemical alloying, and hot pressing which will be discussed along with thermoelectric transport properties.

  5. Application of Molecular Interaction Volume Model for Phase Equilibrium of Sn-Based Binary System in Vacuum Distillation

    NASA Astrophysics Data System (ADS)

    Kong, Lingxin; Yang, Bin; Xu, Baoqiang; Li, Yifu

    2014-09-01

    Based on the molecular interaction volume model (MIVM), the activities of components of Sn-Sb, Sb-Bi, Sn-Zn, Sn-Cu, and Sn-Ag alloys were predicted. The predicted values are in good agreement with the experimental data, which indicate that the MIVM is of better stability and reliability due to its good physical basis. A significant advantage of the MIVM lies in its ability to predict the thermodynamic properties of liquid alloys using only two parameters. The phase equilibria of Sn-Sb and Sn-Bi alloys were calculated based on the properties of pure components and the activity coefficients, which indicates that Sn-Sb and Sn-Bi alloys can be separated thoroughly by vacuum distillation. This study extends previous investigations and provides an effective and convenient model on which to base refining simulations for Sn-based alloys.

  6. Effect of SnO, MgO and Ag2O Mix-doping on the Formation and Superconducting Properties of Bi-2223 Ag/tapes

    NASA Astrophysics Data System (ADS)

    Lu, X. Y.; Yi, D.; Chen, H.; Nagata, A.

    The Ag/tapes with the composition Bi1.8Pb0.4Sr1.9Ca2.1Cu3.5Oy + x wt% SnO + y wt% MgO + z wt% Ag2O (x = 0, 0.2, 0.4; y = 0, 0.2; z = 0, 0.2) were prepared by sintering at 835°C for 120 h after partial-melting at 845°C for 1 h. The individual SnO doping, SnO and Ag2O mix-doping, and SnO and MgO mix-doping all decrease the conversion of Bi-2212 phase to Bi-2223 phase. The tape with individual 0.4 wt% SnO doping shows the lowest conversion and the lowest critical current density. However, the SnO, MgO and Ag2O mix-doping increase the conversion of Bi-2212 phase to Bi-2223 phase. The tape with 0.2 wt% SnO, 0.2 wt% MgO and 0.2 wt%Ag2O mix-doping shows the highest proportion of Bi-2223 phase and the highest critical current density.

  7. Synthesis and high temperature thermoelectric properties of Yb0.25Co4Sb12-(Ag2Te)x(Sb2Te3)1−x nanocomposites

    PubMed Central

    Zheng, Jin; Peng, Jiangying; Zheng, Zhexin; Zhou, Menghan; Thompson, Emily; Yang, Junyou; Xiao, Wanli

    2015-01-01

    Nanocomposites are becoming a new paradigm in thermoelectric study: by incorporating nanophase(s) into a bulk matrix, a nanocomposite often exhibits unusual thermoelectric properties beyond its constituent phases. To date most nanophases are binary, while reports on ternary nanoinclusions are scarce. In this work, we conducted an exploratory study of introducing ternary (Ag2Te)x(Sb2Te3)1−x inclusions in the host matrix of Yb0.25Co4Sb12. Yb0.25Co4Sb12-4wt% (Ag2Te)x(Sb2Te3)1−x nanocomposites were prepared by a melting-milling-hot-pressing process. Microstructural analysis showed that poly-dispersed nanosized Ag-Sb-Te inclusions are distributed on the grain boundaries of Yb0.25Co4Sb12 coarse grains. Compared to the pristine nanoinclusion-free sample, the electrical conductivity, Seebeck coefficient, and thermal conductivity were optimized simultaneously upon nanocompositing, while the carrier mobility was largely remained. A maximum ZT of 1.3 was obtained in Yb0.25Co4Sb12-4wt% (Ag2Te)0.42(Sb2Te3)0.58 at 773 K, a ~ 40% increase compared to the pristine sample. The electron and phonon mean-free-path were estimated to help quantify the observed changes in the carrier mobility and lattice thermal conductivity. PMID:26389111

  8. Mechanical Properties of Ternary Sn-In-Ag Ball-Grid Array Assemblies at Ambient and Elevated Temperatures

    NASA Astrophysics Data System (ADS)

    Yeh, M. S.; Chiang, J. T.

    2009-11-01

    The mechanical behavior of a ternary Sn-15In-2.8Ag ball-grid array assembly was evaluated at ambient and elevated temperatures. The maximum stress of the Sn-15In-2.8Ag ball-grid array assembly decreased as the temperatures increased and the strain rates decreased. An irregular brittle NiSnIn intermetallic layer formed at the SnInAg/Au/Ni/Cu interface, resulting in decreased bond strength of the joints. The Arrhenius diagram of the Sn-15In-2.8Ag ball-grid array assembly at a constant stress of 16 MPa consists of two straight lines intersecting at 50 °C, which indicates that two kinds of creep mechanism controlled the Sn-15In-2.8Ag ball-grid array assembly deformation. The AuIn2 intermetallics and grain boundaries acted as the location for nucleation of the creep voids, which induced reduction of the solder’s cross-sectional area and led the Sn-15In-2.8Ag ball-grid array assembly to fail rapidly with a transgranular creep fracture.

  9. Amperometric biosensor of SnO2 thin film modified by Pd, In and Ag nanostructure synthesized by CSP method

    NASA Astrophysics Data System (ADS)

    Hassan, Marwa Abdul Muhsien; Hateef, Areej Adnan; Majeed, Aseel Mustafa Abdul; Al-Jabiry, Ali Jasim Mohammed; Jameel, Sabah; Hussian, Haidar Abdul Razaq Abdul

    2013-10-01

    Palladium, Indium and Silver-doped SnO2 thin film was deposited by chemical spray pyrolysis on ITO and porous silicon substrates to be a fast MgSO4·7H2O amperometric biosensor. The prepared SnO2 films were doped by dipping in palladium chloride PdCl2, indium chloride, InCl3 and silver nitrides AgNO3 dissolved in ethanol C2H5OH. The structural and optical properties of the prepared films were studied. The sensitivity behaviors of SnO2, SnO2: Pd, SnO2: In and SnO2: Ag based on the amperometric biosensor to MgSO4·7H2O salts were investigated at room temperature with different doping.

  10. Development of a new Pb-free solder: Sn-Ag-Cu

    SciTech Connect

    Miller, C.M.

    1995-02-10

    With the ever increasing awareness of the toxicity of Pb, significant pressure has been put on the electronics industry to get the Pb out of solder. This work pertains to the development and characterization of an alloy which is Pb-free, yet retains the proven positive qualities of current Sn-Pb solders while enhancing the shortcomings of Sn-Pb solder. The solder studied is the Sn-4.7Ag-1.7Cu wt% alloy. By utilizing a variety of experimental techniques the alloy was characterized. The alloy has a melting temperature of 217{degrees}C and exhibits eutectic melting behavior. The solder was examined by subjecting to different annealing schedules and examining the microstructural stability. The effect of cooling rate on the microstructure of the solder was also examined. Overall, this solder alloy shows great promise as a viable alternative to Pb-bearing solders and, as such, an application for a patent has been filed.

  11. Electrocatalytic oxidation of phenol from wastewater using Ti/SnO2-Sb2O4 electrode: chemical reaction pathway study.

    PubMed

    Loloi, Mahshid; Rezaee, Abbas; Aliofkhazraei, Mahmood; Rouhaghdam, Alireza Sabour

    2016-10-01

    In this study, a titanium plate was impregnated with SnO2 and Sb (Ti/SnO2-Sb2O4) for the electrocatalytic removal of phenol from wastewater, and the chemical degradation pathway was presented. The effects of various parameters such as pH, current density, supporting electrolyte, and initial phenol concentration were studied. At optimum conditions, it was found that phenol was quickly oxidized into benzoquinone because of the formation of various strong radicals during electrolysis by the Ti/SnO2-Sb2O4 anode from 100 to <1 mg/L over 1 h. The results of GC/MS analysis showed the presence of some esters of organic acid such as oxalic acid and formic acid. HPLC analysis showed only trace amounts of benzoquinone remaining in the solution. The efficiency of TOC removal at the Ti/SnO2-Sb2O4 anode surface showed a degradation rate of 49 % over 2 h. Results showed that the molecular oxygen potential at the electrode was 1.7 V. The phenol removal mechanism at the surface of the Ti/SnO2-Sb2O4 anode was influenced by the pH. Under acidic conditions, the mechanism of electron transfer occurred directly, whereas under alkaline conditions, the mechanism can be indirect. This research shows that the proposed electrolyte can significantly influence the efficiency of phenol removal. It can be concluded that the treatment using an appropriate Ti/SnO2-Sb2O4 electrode surface can result in the rapid oxidation of organic pollutants.

  12. Electrocatalytic oxidation of phenol from wastewater using Ti/SnO2-Sb2O4 electrode: chemical reaction pathway study.

    PubMed

    Loloi, Mahshid; Rezaee, Abbas; Aliofkhazraei, Mahmood; Rouhaghdam, Alireza Sabour

    2016-10-01

    In this study, a titanium plate was impregnated with SnO2 and Sb (Ti/SnO2-Sb2O4) for the electrocatalytic removal of phenol from wastewater, and the chemical degradation pathway was presented. The effects of various parameters such as pH, current density, supporting electrolyte, and initial phenol concentration were studied. At optimum conditions, it was found that phenol was quickly oxidized into benzoquinone because of the formation of various strong radicals during electrolysis by the Ti/SnO2-Sb2O4 anode from 100 to <1 mg/L over 1 h. The results of GC/MS analysis showed the presence of some esters of organic acid such as oxalic acid and formic acid. HPLC analysis showed only trace amounts of benzoquinone remaining in the solution. The efficiency of TOC removal at the Ti/SnO2-Sb2O4 anode surface showed a degradation rate of 49 % over 2 h. Results showed that the molecular oxygen potential at the electrode was 1.7 V. The phenol removal mechanism at the surface of the Ti/SnO2-Sb2O4 anode was influenced by the pH. Under acidic conditions, the mechanism of electron transfer occurred directly, whereas under alkaline conditions, the mechanism can be indirect. This research shows that the proposed electrolyte can significantly influence the efficiency of phenol removal. It can be concluded that the treatment using an appropriate Ti/SnO2-Sb2O4 electrode surface can result in the rapid oxidation of organic pollutants. PMID:27406226

  13. Reliability of Sn-3.5Ag Solder Joints in High Temperature Packaging Applications

    SciTech Connect

    Muralidharan, Govindarajan; Kurumaddali, Nalini Kanth; Kercher, Andrew K; Leslie, Dr Scott

    2010-01-01

    There is a significant need for next generation, high performance power electronic packages and systems with wide band gap devices to operate at high temperatures in automotive and electricity transmission applications. Sn-3.5Ag solder is a candidate for use in such packages with potential operating temperatures up to 200oC. However, there is a need to understand thermal cycling reliability of Sn-3.5Ag solders subject to such operating conditions. The results of a study on the damage evolution occurring in large area Sn-3.5Ag solders joints between silicon dies and DBC substrates subject to thermal cycling between 200oC and 5oC is presented in this paper. Damage accumulation was followed using high resolution X-ray radiography techniques while nonlinear finite element models were developed based on the mechanical property data available in literature to understand the relationship between the stress state within the solder joint and the damage evolution occurring under thermal cycling conditions. It was observed that regions of damage observed in the experiments do not correspond to the finite element predictions of the location of regions of maximum plastic work.

  14. Soft chemical synthesis of Ag{sub 3}SbS{sub 3} with efficient and recyclable visible light photocatalytic properties

    SciTech Connect

    Gusain, Meenakshi; Rawat, Pooja; Nagarajan, Rajamani

    2014-12-15

    Highlights: • Highly crystalline Ag{sub 3}SbS{sub 3} synthesized using soft chemical approach. • First time report of photocatalytic activity of Ag{sub 3}SbS{sub 3}. • Ag{sub 3}SbS{sub 3} degraded the harmful organic dyes rapidly under visible radiation. • Pseudo first order kinetics have been followed in these sets of reactions. • Up to 90% of Methylene Blue degraded even after 4th cycle of catalyst reuse. • Structure of catalyst is intact after reuse. • As the catalyst is heavy, its separation after use is quite simple. - Abstract: Application of Ag{sub 3}SbS{sub 3}, obtained by soft chemical approach involving rapid reaction of air stable metal–thiourea complexes in ethylene glycol medium, as visible light photocatalyst for the degradation of dye solutions was investigated. Ag{sub 3}SbS{sub 3} was confirmed by high resolution powder X-ray diffraction pattern and its no defined morphology was present in SEM images. From UV–vis spectroscopy measurements, optical band gap of 1.77 eV was deduced for Ag{sub 3}SbS{sub 3}. Rapid degradation kinetics and recyclability was exhibited by Ag{sub 3}SbS{sub 3} towards Methylene Blue, Methyl Orange, Malachite Green, and Rhodamine 6G dye solutions under visible radiation. All these processes followed pseudo first order kinetics. High surface area (6.39 m{sup 2}/g), with mesopores (3.81 nm), arising from solvent mediated synthesis of Ag{sub 3}SbS{sub 3} has been correlated to its catalytic activity.

  15. Thermoelectric Inhomogeneities in (Ag(sub 1-y)SbTe2)(sub x)(PbTe)(sub 1-x)

    NASA Technical Reports Server (NTRS)

    Snyder, G. Jeffrey; Chen, Nancy; Gascoin, Franck; Mueller, Eckhard; Karpinski, Gabriele; Stiewe, Christian

    2006-01-01

    A document presents a study of why materials of composition (Ag1 ySbTe2)0.05 (PbTe)0.95 [0< or = y < or = 1] were previously reported to have values of the thermoelectric figure of merit [ZT (where Z = alpha(sup 2)/rk, alpha is the Seebeck coefficient, r is electrical resistivity, k is thermal conductivity, and T is absolute temperature)] ranging from <1 to >2. In the study, samples of (AgSbTe2)0.05(PbTe)0.95, (Ag0.67SbTe2)0.05 (PbTe)0.95, and (Ag0.55SbTe2)0.05(PbTe)0.95 were prepared by melting followed, variously, by slow or rapid cooling. Analyses of these samples by x-ray diffraction, electron microscopy, and scanning-microprobe measurements of the Seebeck coefficient led to the conclusion that these materials have a multiphase character on a scale of the order of millimeters, even though they appear homogeneous in x-ray diffraction and electron microscopy. The Seebeck measurements showed significant variations, including both n-type and p-type behavior in the same sample. These variations were found to be consistent with observed variations of ZT. The rapidly quenched samples were found to be less inhomogeneous than were the furnace-cooled ones; hence, rapid quenching was suggested as a basis of research on synthesizing more nearly uniform high-ZT samples.

  16. Electronic and Optical Properties of Ca3MN (M = Ge, Sn, Pb, P, As, Sb and Bi) Antiperovskite Compounds

    NASA Astrophysics Data System (ADS)

    Iqbal, Samad; Murtaza, G.; Khenata, R.; Mahmood, Asif; Yar, Abdullah; Muzammil, M.; Khan, Matiullah

    2016-08-01

    The electronic and optical properties of cubic antiperovskites Ca3MN (M = Ge, Sn, Pb, P, As, Sb and Bi) were investigated by applying the full potential linearized augmented plane wave plus local orbitals (FP-LAPW + lo) scheme based on density functional theory. Different exchange correlation potentials were adopted for the calculations. The results of band structure and density of states show that, by changing the central anion of Ca3MN, the nature of the materials change from metallic (Ca3GeN, Ca3SnN, Ca3PbN) to semiconducting with small band gaps (Ca3SbN and Ca3BiN) to insulating (Ca3PN and Ca3AsN). The optical properties such as dielectric function, absorption coefficient, optical conductivity, reflectivity and refractive indices have also been calculated. The results reveal that all the studied compounds are optically active in the visible and ultraviolet energy regions, and therefore can be effectively utilized for optoelectronic devices.

  17. Rapid Microwave Preparation of Thermoelectric TiNiSn and TiCoSb Half-Heusler Compounds

    SciTech Connect

    Birkel, Christina S.; Zeier, Wolfgang G.; Douglas, Jason E.; Lettiere, Bethany R.; Mills, Carolyn E.; Seward, Gareth; Birkel, Alexander; Snedaker, Matthew L.; Zhang, Yichi; Snyder, G. Jeffrey; Pollock, Tresa M.; Seshadri, Ram; Stucky, Galen D.

    2012-10-25

    The 18-electron ternary intermetallic systems TiNiSn and TiCoSb are promising for applications as high-temperature thermoelectrics and comprise earth-abundant, and relatively nontoxic elements. Heusler and half-Heusler compounds are usually prepared by conventional solid state methods involving arc-melting and annealing at high temperatures for an extended period of time. Here, we report an energy-saving preparation route using a domestic microwave oven, reducing the reaction time significantly from more than a week to one minute. A microwave susceptor material rapidly heats the elemental starting materials inside an evacuated quartz tube resulting in near single phase compounds. The initial preparation is followed by a densification step involving hot-pressing, which reduces the amount of secondary phases, as verified by synchrotron X-ray diffraction, leading to the desired half-Heusler compounds, demonstrating that hot-pressing should be treated as part of the preparative process. For TiNiSn, high thermoelectric power factors of 2 mW/mK{sup 2} at temperatures in the 700 to 800 K range, and zT values of around 0.4 are found, with the microwave-prepared sample displaying somewhat superior properties to conventionally prepared half-Heuslers due to lower thermal conductivity. The TiCoSb sample shows a lower thermoelectric figure of merit when prepared using microwave methods because of a metallic second phase.

  18. High-performance Ti/Sb-SnO(2)/Pb(3)O(4) electrodes for chlorine evolution: preparation and characteristics.

    PubMed

    Shao, Dan; Yan, Wei; Cao, Lu; Li, Xiaoliang; Xu, Hao

    2014-02-28

    Chlorine evolution via electrochemical approach has wide application prospects in drinking water disinfection and wastewater treatment fields. Dimensional stable anodes used for chlorine evolution should have high stability and adequate chlorine evolution efficiency. Thus a novel and cost-effective Ti/Sb-SnO(2)/Pb(3)O(4)electrode was developed. The physicochemical and electrochemical properties as well as the chlorine evolution performances of the electrodes were investigated. The electrocatalytic activity and deactivation course of the electrodes were also explored. Results showed that this novel electrode had strong chlorine evolution ability with high current efficiency ranging from 87.3% to 93.4% depending on the operational conditions. The accelerated service life of Ti/Sb-SnO(2)/Pb(3)O(4) electrode could reach 180 h at a current density of 10,000 A m(-2) in 0.5 molL(-1) H(2)SO(4). During the electrolysis process, it was found that the conversion of Pb(3)O(4) into β-PbO(2) happened gradually on the electrode surface, which not only inhibited the leakage of hazardous Pb(2+) ion but also increased the anti-corrosion capacity of the electrode effectively.

  19. Limits of carrier mobility in Sb-doped SnO{sub 2} conducting films deposited by reactive sputtering

    SciTech Connect

    Bissig, B. Jäger, T.; Tiwari, A. N.; Romanyuk, Y. E.; Ding, L.

    2015-06-01

    Electron transport in Sb-doped SnO{sub 2} (ATO) films is studied to unveil the limited carrier mobility observed in sputtered films as compared to other deposition methods. Transparent and conductive ATO layers are deposited from metallic tin targets alloyed with antimony in oxygen atmosphere optimized for reactive sputtering. The carrier mobility decreases from 24 cm{sup 2} V{sup −1} s{sup −1} to 6 cm{sup 2} V{sup −1} s{sup −1} when increasing the doping level from 0 to 7 at. %, and the lowest resistivity of 1.8 × 10{sup −3} Ω cm corresponding to the mobility of 12 cm{sup 2} V{sup −1} s{sup −1} which is obtained for the 3 at. % Sb-doped ATO. Temperature-dependent Hall effect measurements and near-infrared reflectance measurements reveal that the carrier mobility in sputtered ATO is limited by ingrain scattering. In contrast, the mobility of unintentionally doped SnO{sub 2} films is determined mostly by the grain boundary scattering. Both limitations should arise from the sputtering process itself, which suffers from the high-energy-ion bombardment and yields polycrystalline films with small grain size.

  20. Sol-Gel derived Sb-doped SnO II/SiO II nano-composite thin films for gas sensors

    NASA Astrophysics Data System (ADS)

    Gu, Zhengtian; Liang, Peihui; Zhang, Weiqing

    2006-05-01

    Sb-doped SnO II/SiO II nano-composite thin films prepared by sol-gel dip-coating method have been studied. By using X-ray diffraction (XRD), atomic force microscopy (AFM) and Fourier transform infrared (FTIR) spectroscopy, detailed investigation on the structure and morphology of the films has shown the crystalline grain size of Sb-doped SnO II/SiO II thin films is about 34nm, with larger specific surface area and duty porosity, which is fit for gas-sensing materials. The adulteration of SiO II particles leads to the condensation of Sn-OH and the strengthening of gel network, and improve the adhesion of the films. In addition, the optical properties of the thin films were studied by UV-Vis spectra and p-polarized light reflectance angular spectrum. The results showthat the optical transmissivity of Sb-doped SnO II/SiO II thin films is higher, near 95% in visible spectrum range, the measured optical gap is found equal to 3.67eV, also the films take on smaller refractive index and extinction coefficient compared with those of the SnO II and Sb:SnO II films, which is compatible with the semiconductor substrate in the solar cell. Further, the gas-sensing test was made to three kinds of gas C 3H 8, C IIH 5OH and NH 3 in our novel high sensitive scheme for optical film sensors. The results indicate that Sb doping to SnO II films greatly improves the gas sensitivity to C IIH 5OH, and the gas sensitivity of Sb:SnO II/SiO II nano-composite thin films are higher than that of Sb:SnO II thin films. The detection sensitivity of this optical film sensor is available to 10 -1ppm provided that the resolution of reflectance ratio is 10 -2.

  1. Enhanced thermoelectric performance and novel nanopores in AgSbTe{sub 2} prepared by melt spinning

    SciTech Connect

    Du, Baoli; Li, Han; Xu, Jingjing; Tang, Xinfeng; Uher, Ctirad

    2011-01-15

    We report a melt-spinning spark-plasma-sintering synthesis process of the polycrystalline p-type material composed of AgSbTe{sub 2} coarse grains and evenly formed 5-10 nm pores that occur primarily on the surface of matrix grains. The formation mechanism of nanopores and their influences on the thermoelectric properties have been studied and correlated. Microstructure analysis shows that the as-prepared sample can be regarded as a nanocomposite of matrix and in situ generated nanopores evenly coated on matrix grains. For the single-phase component and the possible energy-filter effect caused by the nanopores, the electrical transport properties are improved. Moreover, the thermal conductivity is significantly reduced by strong phonon scattering effect resulted from the nanopores. The thermoelectric performance of the as prepared sample enhances greatly and a ZT of 1.65 at 570 K is achieved, increasing{approx}200% compared with the sample prepared by traditional melt and slow-cooling method. -- Graphical abstract: Representative nanostructure of AgSbTe{sub 2} sample (a) ribbons obtained after melt spinning (b) bulk AgSbTe{sub 2} material obtained after spark plasma sintering. Display Omitted

  2. Investigation of InSb-In2XTe (X =Ge & Sn) pseudo binary alloys as potential thermoelectric materials

    NASA Astrophysics Data System (ADS)

    Ponnambalam, Vijayabarathi; Morelli, Donald T.

    2015-03-01

    Crystallizing in the zinc blende structure, InSb is known for promising thermoelectric properties with carrier mobility as high as ~ 104 cm2/V s at 300 K. However, the main drawback is its exceptionally high thermal conductivity ~ 20 W/m K at 300 K. In this regard, pseudo binaries InSb-In2XTe (X =Ge & Sn) hold the promise of offering reduced thermal conductivity while maintaining the other thermoelectric properties intact. A series of InSb-In2XTe type alloys has been synthesized. Thermal and electrical transport properties have been studied, and the results will be discussed with an emphasis on how the thermal conductivity is affected by the concentration of solute atoms. This work was supported as part of the Center for Revolutionary Materials for Solid State Energy Conversion, an Energy Frontier Research Center funded by the U.S. Department of Energy, Office of Science, Office of Basic Energy Sciences under Award Number DE-SC0001054.

  3. First principle study of structural, electronic and magnetic properties of half-Heusler IrCrZ (Z=Ge, As, sn and sb) compounds

    NASA Astrophysics Data System (ADS)

    Allaf Behbahani, Marzieh; Moradi, Mahmood; Rostami, Mohammad; Davatolhagh, Saeed

    2016-05-01

    First-principle calculations based on the density functional theory for new half-Heusler IrCrZ (Z=Ge, As, Sn and Sb) alloys are performed. It is found that the half-Heusler IrCrGe and IrCrSn compounds have an antiferromagnetic ground state while the ferromagnetic state is more stable than the antiferromagnetic and non-magnetic states for both IrCrAs and IrCrSb compounds. IrCrAs and IrCrSb exhibit half-metallic property with integer magnetic moments of 2.00 μB per formula unit and half-metallic gaps of 0.28 and 0.27 eV at their equilibrium volume, respectively. In addition, the density of states (DOSs) and band structures of IrCrAs and IrCrSb compounds are studied and the origin of their half-metallic gaps are discussed in detail. The estimation of Curie temperatures of IrCrAs and IrCrSb compounds is performed within the mean field approximation (MFA). The Curie temperatures of IrCrAs and IrCrSb are estimated to be 1083 and 1470 K, respectively. The stability of the half-metallicity in IrCrAs and IrCrSb compounds with the variation of lattice constant are also investigated.

  4. Electromigration induced Kirkendall void growth in Sn-3.5Ag/Cu solder joints

    SciTech Connect

    Jung, Yong; Yu, Jin

    2014-02-28

    Effects of electric current flow on the Kirkendall void formation at solder joints were investigated using Sn-3.5Ag/Cu joints specially designed to have localized nucleation of Kirkendall voids at the Cu{sub 3}Sn/Cu interface. Under the current density of 1 × 10{sup 4} A/cm{sup 2}, kinetics of Kirkendall void growth and intermetallic compound thickening were affected by the electromigration (EM), and both showed the polarity effect. Cu{sub 6}Sn{sub 5} showed a strong susceptibility to the polarity effect, while Cu{sub 3}Sn did not. The electromigration force induced additional tensile (or compressive) stress at the cathode (or anode), which accelerated (or decelerated) the void growth. From the measurements of the fraction of void at the Cu{sub 3}Sn/Cu interface on SEM micrographs and analysis of the kinetics of void growth, the magnitude of the local stress induced by EM was estimated to be 9 MPa at the anode and −7 MPa at the cathode.

  5. Synthesis and thermal behavior of tin-based alloy (Sn-Ag-Cu) nanoparticles.

    PubMed

    Roshanghias, Ali; Yakymovych, Andriy; Bernardi, Johannes; Ipser, Herbert

    2015-03-19

    The prominent melting point depression of nanoparticles has been the subject of a considerable amount of research. For their promising applications in electronics, tin-based nano-alloys such as near-eutectic Sn-Ag-Cu (SAC) alloys have been synthesized via various techniques. However, due to issues such as particle aggregation and oxidation or introduced impurities, the application of these nano-size particles has been confined or aborted. For instance, thermal investigations by DTA/DSC in a large number of studies revealed exothermic peaks in the range of 240-500 °C, i.e. above the melting point of SAC nanoparticles, with different and quite controversial explanations for this unclear phenomenon. This represents a considerable drawback for the application of nanoparticles. Correspondingly, in the current study, the thermal stability of SAC nanoparticles has been investigated via electron microscopy, XRD, FTIR, and DSC/TG analysis. It was found that the nanoparticles consist mainly of a metallic β-Sn core and an amorphous tin hydroxide shell structure. The SnO crystalline phase formation from this amorphous shell has been associated with the exothermic peaks on the first heating cycle of the nanoparticles, followed by a disproportionation reaction into metallic Sn and SnO₂.The results also revealed that the surfactant and reducing agent cannot only affect the size and size distribution of the nanoparticles, they might also alter the ratio between the amorphous shell and the crystalline core in the structure of particles. PMID:25757694

  6. Photo-enhanced salt-water splitting using orthorhombic Ag8SnS6 photoelectrodes in photoelectrochemical cells

    NASA Astrophysics Data System (ADS)

    Cheng, Kong-Wei; Tsai, Wei-Tseng; Wu, Yu-Hsuan

    2016-06-01

    Orthorhombic Ag8SnS6 photoelectrodes are prepared on various substrates via reactive sulfurization using the radio-frequency magnetron sputtering of silver-tin metal precursors. Evaluations of the photoelectrochemical performances of Ag8SnS6 photoelectrodes with various levels of silver content are carried out in various aqueous solutions. X-ray diffraction patterns and Hall measurements of samples after a three-stage sulfurization process show that all samples are the pure orthorhombic Ag8SnS6 phase with n-type conductivity. The energy band gaps, carrier concentrations, and mobilities of samples on glass substrates are 1.31-1.33 eV, 7.07 × 1011-8.52 × 1012 cm-3, and 74.9-368 cm2 V-1 s-1, respectively, depending on the [Ag]/[Ag+Sn] molar ratio in samples. The highest photoelectrochemical performances of orthorhombic Ag8SnS6 photoelectrodes in aqueous 0.35 M Na2S + 0.25 M K2SO3 and 0.5 M NaCl solutions are respectively 2.09 and 2.5 mA cm-2 at an applied voltages of 0.9 and 1.23 V vs. a reversible hydrogen electrode under light irradiation with a light intensity of 100 mW cm-2 from a 300-W Xe lamp.

  7. Solid-state growth kinetics of Ni{sub 3}Sn{sub 4} at the Sn-3.5Ag solder/Ni interface

    SciTech Connect

    Alam, M.O.; Chan, Y.C.

    2005-12-15

    Systematic experimental work was carried out to understand the growth kinetics of Ni{sub 3}Sn{sub 4} at the Sn-3.5Ag solder/Ni interface. Sn-3.5%Ag solder was reflowed over Ni metallization at 240 deg. C for 0.5 min and solid-state aging was carried out at 150-200 deg. C, for different times ranging from 0 to 400 h. Cross-sectional studies of interfaces have been conducted by scanning electron microscopy and energy dispersive x ray. The growth exponent n for Ni{sub 3}Sn{sub 4} was found to be about 0.5, which indicates that it grows by a diffusion-controlled process even at a very high temperature near to the melting point of the SnAg solder. The activation energy for the growth of Ni{sub 3}Sn{sub 4} was determined to be 16 kJ/mol.

  8. Effect of Process and Service Conditions on TLP-Bonded Components with (Ag,Ni-)Sn Interlayer Combinations

    NASA Astrophysics Data System (ADS)

    Lis, Adrian; Leinenbach, Christian

    2015-11-01

    Transient liquid phase (TLP) bonding of Cu substrates was conducted with interlayer systems with the stacking sequences Ag-Sn-Ag (samples A), Ni-Sn-Ni (samples B), and combined Ag-Sn-Ni (samples C). Because of the low mismatch of the coefficients of thermal expansion, characteristics of the TLP process and mechanical and thermal behavior of TLP-bonded samples could be investigated without interference from thermally induced residual stresses. An ideal process temperature of 300°C, at which the number of pores was lowest, was identified for all three layer systems. It was verified experimentally that formation of pores resulted from volume contraction during isothermal solidification of liquid Sn into intermetallic compounds (IMC). Temperature and interlayer-dependent growth characteristics of IMC accounted for the increasing size and number of defects with increasing process temperature and for different defect positions. The shear strength was measured to be 60.4 MPa, 27.4 MPa, and 40.7 MPa for samples A, B, and C, respectively, and ductile fracture features were observed for Ag3Sn IMC compared with the purely brittle behavior of Ni3Sn4 IMC. Excellent thermal stability for all three layer systems was confirmed during long-term annealing at 200°C for up to 1200 h, whereas at 300°C the microstructure was driven toward Ag-Sn solid solution, accompanied by Cu diffusion from the substrate along grain boundaries and Cu3Sn IMC formation (A), and toward Ni-rich IMC phases (B). Combined IMC interlayers (C) tended to be transformed into Ni-based IMC when held at 300°C; intermixing into (Ni,Cu)3Sn was accompanied by pore formation.

  9. In situ observation of thermomigration of Sn atoms to the hot end of 96.5Sn-3Ag-0.5Cu flip chip solder joints

    NASA Astrophysics Data System (ADS)

    Ouyang, Fan-Yi; Kao, C.-L.

    2011-12-01

    In this study, we investigated the phenomenon of thermomigration in 96.5Sn-3Ag-0.5Cu flip chip solder joints at an ambient temperature of 150 °C. We observed mass protrusion on the chip side (hot end), indicating that Sn atoms moved to the hot end, and void formation on the substrate side (cold end). The diffusion markers also moved to the substrate side, in the same direction of the vacancy flux, indicating that the latter played a dominant role during the thermomigration process. The molar heat of transport (Q*) of the Sn atoms was 3.38 kJ/mol.

  10. Growth Behavior of Intermetallic Compounds in Cu/Sn3.0Ag0.5Cu Solder Joints with Different Rates of Cooling

    NASA Astrophysics Data System (ADS)

    Yang, Linmei; Zhang, Z. F.

    2015-01-01

    The growth behavior of intermetallic compounds (IMC) in Cu/Sn3.0Ag0.5Cu solder joints, including the interfacial Cu6Sn5 layer and Ag3Sn, and Cu6Sn5 in the solder, were investigated when different cooling methods—quenched water, cooling in air, and cooling in a furnace after reflow—were used. For the solder joint quenched in water, no obvious Cu6Sn5 or Ag3Sn was detected in the solder, and the thickness of interfacial Cu6Sn5 layer was slightly thinner than that of the joint cooled in air. On the basis of results from scanning electron microscopy and energy-dispersive spectrometry, a mechanism is proposed for growth of IMC in Sn3.0Ag0.5Cu solder during solidification. The rate of cooling has a substantial effect on the morphology and size of Ag3Sn, which evolved into large plate-like shapes when the joint was cooled slowly in a furnace. However, the morphology of Ag3Sn was branch-like or particle-like when the joint was cooled in air. This is attributed to re-growth of Ag3Sn grains via substantial atomic diffusion during the high-temperature stage of furnace cooling.

  11. Creep deformation behavior in eutectic Sn-Ag solder joints using a novel mapping technique

    SciTech Connect

    Lucas, J.P.; Guo, F.; McDougall, J.; Bieler, T.R.; Subramanian, K.N.; Park, J.K.

    1999-11-01

    Creep deformation behavior was measured for 60--100 {micro}m thick solder joints. The solder joints investigated consisted of: (1) non-composite solder joints made with eutectic Sn-Ag solder, and (2) composite solder joints with eutectic Sn-Ag solder containing 20 vol.%, 5 {micro}m diameter in-situ Cu{sub 6}Sn{sub 5} intermetallic reinforcements. All creep testing in this study was carried out at room temperature. Qualitative and quantitative assessment of creep deformation was characterized on the solder joints. Creep deformation was analyzed using a novel mapping technique where a geometrical-regular line pattern was etched over the entire solder joint using excimer laser ablation. During creep, the laser-ablation (LA) pattern becomes distorted due to deformation in the solder joint. By imaging the distortion of laser-ablation patterns using the SEM, actual deformation mapping for the entire solder joint is revealed. The technique involves sequential optical/digital imaging of the deformation versus time history during creep. By tracing and recording the deformation of the LA patterns on the solder over intervals of time, local creep data are obtained in many locations in the joint. This analysis enables global and localized creep shear strains and strain rate to be determined.

  12. Investigation of resistive switching behavior of Ag/SnOx/ITO device

    NASA Astrophysics Data System (ADS)

    Chen, Da; Huang, Shi-Hua

    2015-04-01

    SnOx thin film was deposited by reactive magnetron sputtering and the resistance switching behavior of Ag/SnOx/ITO was investigated. The endurance testing indicates that HRS resistance decreases with an increase in the number of cycles. After annealing, the memory performance is enhanced, and the ratio of the device resistance of HRS and LRS increases greatly. The abnormal transformation sequence from HRS to LRS was observed for the annealed device and can be explained by electron trapping and detrapping based on the analysis of x-ray diffraction and the Raman spectrum. The temperature-dependent I-V measurement indicates that the thermal activation process is responsible for the temperature range of 300 to 200 K however, the carrier transport can be ascribed to the nearest-neighbor hopping conduction mechanism for the temperature range of 200 to 100 K. The general conduction mechanism of Ag/SnOx/ITO device can be elucidated by the trap-controlled space charge limited conduction model, and the conductive schematic in the SET and RESET processes has been given.

  13. Theoretical investigation of Sn-doped Ge{sub 2}Sb{sub 2}Te{sub 5} alloy in crystalline phase

    SciTech Connect

    Singh, Janpreet; Tripathi, S. K.; Singh, Gurinder; Kaura, Aman

    2015-06-24

    Ge{sub 2}Sb{sub 2}Te{sub 5} (GST) is technologically important for phase-change random access memory applications. It has been shown that the 2.2 atomic % doping of Sn weakens the Ge–Te bond strength while maintaining the symmetry of stable phase of GST. The influence of Sn doping upon the phase change characteristics of the crystalline GST alloy has been investigated by ab initio calculations. The lattice parameter, average interface distances between two adjacent (111) layers, equilibrium volume, metallic character and electrical resistance has been calculated for the stable phase of GST and Sn-doped GST.

  14. Synthesis and electrochemical performances of amorphous carbon-coated Sn-Sb particles as anode material for lithium-ion batteries

    SciTech Connect

    Wang Zhong; Tian Wenhuai; Liu Xiaohe; Yang Rong; Li Xingguo

    2007-12-15

    The amorphous carbon coating on the Sn-Sb particles was prepared from aqueous glucose solutions using a hydrothermal method. Because the outer layer carbon of composite materials is loose cotton-like and porous-like, it can accommodate the expansion and contraction of active materials to maintain the stability of the structure, and hinder effectively the aggregation of nano-sized alloy particles. The as-prepared composite materials show much improved electrochemical performances as anode materials for lithium-ion batteries compared with Sn-Sb alloy and carbon alone. This amorphous carbon-coated Sn-Sb particle is extremely promising anode materials for lithium secondary batteries and has a high potentiality in the future use. - Graphical abstract: The amorphous carbon coating on the Sn-Sb particles was prepared from aqueous glucose solutions using a hydrothermal method. Because the outer layer carbon of composite materials is loose cotton-like and porous-like, it can accommodate the expansion and contraction of active materials to maintain the stability of the structure, and hinder effectively the aggregation of nano-sized alloy particles.

  15. Structural analysis of quaternary Se{sub 85−x}Sb{sub 10}In{sub 5}Ag{sub x} bulk glassy alloys

    SciTech Connect

    Sharma, Rita Sharma, Shaveta; Kumar, Praveen; Chander, Ravi; Thangaraj, R.; Mian, M.

    2015-08-28

    The physical properties of chalcogenide semiconductor have attracted much attention recently due to their applications in optical recording media and inorganic resist due to photo induced structural transformations observed in these materials. The bulk samples of Se{sub 85-x}Sb{sub 10}In{sub 5}Ag{sub x} system are prepared by melt-quenching technique. X-ray diffraction technique and RAMAN spectroscopy have been used to study the role of Ag additive on the amorphous/crystalline nature and molecular structure of Se{sub 85}Sb{sub 10}In{sub 5} glassy alloys. The phases Sb{sub 2}Se{sub 3}, In-Sb and In{sub 2}Se{sub 3} has been observed by X-ray diffraction. The formation of AgInSe{sub 2} phase along with the enhancement in intensity has been observed with the Ag addition.Three bands observed by raman spectroscopy for Se85Sb10In5 are at 70 cm-1, 212cm-1 and 252cm-1. The formation of small bands up to wavenumber 188cm{sup -1} and shifting in second band along with the increase in intensity up to sample x=5 has been observed with the Ag addition. The enhancement in intensity in third band with Ag content has been observed.

  16. Knudsen effusion mass spectrometric determination of mixing thermodynamic data of liquid Ag-In-Sn alloy

    NASA Astrophysics Data System (ADS)

    Bencze, L.; Popovic, A.

    2008-03-01

    The vaporisation of a liquid Ag-In-Sn system has been investigated at 1273-1473 K by Knudsen effusion mass spectrometry (KEMS) and the data fitted to a Redlich-Kister-Muggianu (RKM) sub-regular solution model. Nineteen different compositions have been examined at six fixed indium mole fractions, XIn = 0.10, 0.117, 0.20, 0.30, 0.40 and 0.50. The ternary L-parameters, the thermodynamic activities and the thermodynamic properties of mixing have been evaluated using standard KEMS procedures and from the measured ion intensity ratios of Ag+ to In+ and Ag+ to Sn+, using a mathematical regression technique described by us for the first time. The intermediate data obtained directly from the regression technique are the RKM ternary L-parameters. From the obtained ternary L-parameters the integral molar excess Gibbs free energy, the excess chemical potentials, the activity coefficients and the activities have been evaluated. Using the temperature dependence of the activities, the integral and partial molar excess enthalpies and entropies were determined. In addition, for comparison, for some compositions, also the Knudsen effusion isothermal evaporation method (IEM) and the Gibbs-Duhem ion intensity ratio method (GD-IIR) were used to determine activities and good agreement was obtained with the data obtained from fitting to the RKM model.

  17. Effect of (Ag, Sn) Doping on the Structure and Optical Properties of Au Nanocluster

    NASA Astrophysics Data System (ADS)

    Balu, Radhakrishnan; Karna, Shashi

    2014-03-01

    Noble metal nanoclusters (NCs) consisting of a few to 35 atoms in size in the sub 2 nm range dimension are considered to be nontoxic as opposed to nanoparticles that are cytotoxic. Also, due to the quantum confinement of electrons, these NCs exhibit atom-like energy spectrum and display fluorescent properties useful in a wide range of applications, including medical diagnosis. The unique features of NCs such as size-tunable optical properties, intense fluorescence in the visible, and biocompatibility have stimulated an active area of investigation of noble metal NCs comprised of Au, Ag, Cu, and Pt. Furthermore, the electronic properties of nanoclusters can be modified by combining them with other elements. In this study, we consider the space-filled configuration of Au32 NC and investigate the effects of Ag and Sn atom incorporation on geometry and electronic spectrum. Our study suggests that Ag and Sn doping of Au32 NC red-shifts the absorption maximum and also reduces the oscillator strength.

  18. Solid Liquid Interdiffusion Bonding of Zn4Sb3 Thermoelectric Material with Cu Electrode

    NASA Astrophysics Data System (ADS)

    Lin, Y. C.; Lee, K. T.; Hwang, J. D.; Chu, H. S.; Hsu, C. C.; Chen, S. C.; Chuang, T. H.

    2016-10-01

    The ZnSb intermetallic compound may have thermoelectric applications because it is low in cost and environmentally friendly. In this study, a Zn4Sb3 thermoelectric element coated with a Ni barrier layer and a Ag reaction layer was bonded with a Ag-coated Cu electrode using a Ag/Sn/Ag solid-liquid interdiffusion bonding process. The results indicated that a Ni5Zn21 intermetallic phase formed easily at the Zn4Sb3/Ni interface, leading to sound adhesion. In addition, Sn film was found to react completely with the Ag layer to form a Ag3Sn intermetallic layer having a melting point of 480°C. The resulting Zn4Sb3 thermoelectric module can be applied at the optimized operation temperature (400°C) of Zn4Sb3 material as a thermoelectric element. The bonding strengths ranged from 14.9 MPa to 25.0 MPa, and shear tests revealed that the Zn4Sb3/Cu-joints fractured through the interior of the thermoelectric elements.

  19. Solid Liquid Interdiffusion Bonding of Zn4Sb3 Thermoelectric Material with Cu Electrode

    NASA Astrophysics Data System (ADS)

    Lin, Y. C.; Lee, K. T.; Hwang, J. D.; Chu, H. S.; Hsu, C. C.; Chen, S. C.; Chuang, T. H.

    2016-06-01

    The ZnSb intermetallic compound may have thermoelectric applications because it is low in cost and environmentally friendly. In this study, a Zn4Sb3 thermoelectric element coated with a Ni barrier layer and a Ag reaction layer was bonded with a Ag-coated Cu electrode using a Ag/Sn/Ag solid-liquid interdiffusion bonding process. The results indicated that a Ni5Zn21 intermetallic phase formed easily at the Zn4Sb3/Ni interface, leading to sound adhesion. In addition, Sn film was found to react completely with the Ag layer to form a Ag3Sn intermetallic layer having a melting point of 480°C. The resulting Zn4Sb3 thermoelectric module can be applied at the optimized operation temperature (400°C) of Zn4Sb3 material as a thermoelectric element. The bonding strengths ranged from 14.9 MPa to 25.0 MPa, and shear tests revealed that the Zn4Sb3/Cu-joints fractured through the interior of the thermoelectric elements.

  20. Fabrication and shear strength analysis of Sn-3.5Ag/Cu-filled TSV for 3D microelectronic packaging

    NASA Astrophysics Data System (ADS)

    Sharma, Ashutosh; Jung, Do-Hyun; Roh, Myong-Hoon; Jung, Jae Pil

    2016-09-01

    In this study, lead free Sn-3.5Ag solder bumps have been deposited on Cu-filled through-silicon via (TSV) by electroplating method. The solder bumps are plated using an acidic solution composed of SnSO4, H2SO4, Ag2SO4, thiourea and an additive. The current density is varied from -30 to -60 mA/cm2 to obtain the eutectic Sn-3.5Ag solder. The copper is electroplated in TSV using an acidic solution of CuSO4·5H2O, H2SO4, HCl, and an inhibitor. The bottom-up Cu-filling in TSV is achieved by a 3-step pulse periodic reverse (PPR) electroplating. It has been observed that the eutectic Sn-3.5Ag solder is achieved at a current density of -55 mA/cm2. The solder bumps are further reflowed onto TSV at 260 °C for 20 seconds, and shear strength of the formed Sn-3.5Ag/Cu-filled TSV joint is investigated. The results indicate the formation of Cu6Sn5 and Ag3Sn intermetallic compounds (IMCs) at the joint interface. It is found that with an increase of shear speed from 0.5-10 mm/s, the shear stress initially increases to a maximum, and then decreases beyond shear speed of 10 mm/s through 500 mm/s. It is shown that the ductile fracture mode gradually decreases beyond shear speed of 10 mm/s and disappears completely at 500 mm/s.

  1. The simple hydrothermal synthesis of Ag-ZnO-SnO2 nanochain and its multiple applications.

    PubMed

    Balachandran, Subramanian; Selvam, Kaliyamoorthy; Babu, Balraj; Swaminathan, Meenakshisundaram

    2013-12-14

    In this article, we report the fabrication of a stable Ag-ZnO-SnO2 nanochain by template free hydrothermal method and its photocatalytic activity for the first time. This composite material represents a potential new class of photocatalysts with enhanced light absorption, hydrophobic and electronic properties of ZnO. This catalyst has been characterized by X-ray diffraction (XRD), high resolution scanning electron microscopy (HRSEM), field emission scanning electron microscopy (FESEM), elemental mapping, energy dispersive spectroscopy (EDS), X-ray photoelectron spectroscopy (XPS), UV-Vis diffuse reflectance spectroscopy (DRS) and photoluminescence spectroscopy (PL). XRD and elemental mapping reveal the presence of SnO2 and Ag in the catalyst. Ag-ZnO-SnO2 has increased absorption in the visible region when compared to ZnO. This three component nano junction system exhibits enhanced photocatalytic activity for the degradation of azo dyes, Acid Black 1 (AB 1) and Acid Violet 7 (AV 7) under UV light (365 nm), far exceeding those of the single and two component systems. Ag-ZnO-SnO2 is found to be reusable without appreciable loss of catalytic activity up to four runs. Based on the band gap energies of ZnO and SnO2, a mechanism is proposed for the photodegradation of dyes. Hydrophobicity and photoconductivity of Ag-ZnO-SnO2 have been evaluated. Nanochain exhibiting higher positive photoconductivity can be useful for soliton wave communication as well as solar cell applications. Our results provide some new insights on the fabrication of Ag-ZnO-SnO2 and its performance as an active photocatalyst, self cleaning and conducting material.

  2. Bulk and surface electron dynamics in a p-type topological insulator SnSb2Te4

    NASA Astrophysics Data System (ADS)

    Niesner, D.; Otto, S.; Hermann, V.; Fauster, Th.; Menshchikova, T. V.; Eremeev, S. V.; Aliev, Z. S.; Amiraslanov, I. R.; Babanly, M. B.; Echenique, P. M.; Chulkov, E. V.

    2014-02-01

    Time-resolved two-photon photoemission was used to study the electronic structure and dynamics at the surface of SnSb2Te4, a p-type topological insulator. The Dirac point is found 0.32±0.03 eV above the Fermi level. Electrons from the conduction band minimum are scattered on a time scale of 43±4 fs to the Dirac cone. From there they decay to the partly depleted valence band with a time constant of 78±5 fs. The significant interaction of the Dirac states with bulk bands is attributed to their bulk penetration depth of ˜3 nm as found from density functional theory calculations.

  3. Structural, Morphological and Optical Properties of Sn3Sb2S6 Thin Films Synthesized by Oblique Angle Deposition

    NASA Astrophysics Data System (ADS)

    Larbi, A.; Chaffar Akkari, F.; Dahman, H.; Demaille, D.; Gallas, B.; Kanzari, M.

    2016-06-01

    The oblique angle deposition technique has attracted a lot attention in many different applications due to its unique advantage of programmable nanocolumns. In this work we use this technique to investigate the physical properties of obliquely thermal evaporated Sn3Sb2S6 thin films deposited onto unheated glass and silicon substrates, inclined from the flux vapor source at the deposition angles 0°, 40°, 60°, 75° and 85°. X-ray diffraction (XRD) and UV-Visible and near infrared (UV-Vis-IFR) analysis were used respectively to characterize the structural and optical properties of the layers. The influence of flux angle on the surface morphology and the microstructure was investigated by using scanning electron microscopy. The optical constants were obtained from analysis of the experimental recorded transmission and reflectance spectral data over the wavelength range 300 nm to 1800 nm. The band gaps of the synthesized thin films were found to be direct allowed transitions and increased from 1.44 eV to 1.66 eV with increasing γ from 0° to 85°, respectively. The absorption coefficients of the films are in the range of 105 cm-1 to 106 cm-1. The refractive indexes were evaluated in the transparent region in terms of the envelope method suggested by the Swanepoel model. It has been found that the refractive index decreases from 2.66 to 2.06 with increasing deposition angle from 0° to 85°, respectively. The relationship between the flux incident angles γ and the column angle β was also explored. The oblique angle deposition films showed an inclined columnar structure, with columns tilting in the direction of the incident flux. The effective packing densities of the synthesized Sn3Sb2S6 thin films were calculated using Bruggeman effective medium approximation.

  4. Structural, Morphological and Optical Properties of Sn3Sb2S6 Thin Films Synthesized by Oblique Angle Deposition

    NASA Astrophysics Data System (ADS)

    Larbi, A.; Chaffar Akkari, F.; Dahman, H.; Demaille, D.; Gallas, B.; Kanzari, M.

    2016-10-01

    The oblique angle deposition technique has attracted a lot attention in many different applications due to its unique advantage of programmable nanocolumns. In this work we use this technique to investigate the physical properties of obliquely thermal evaporated Sn3Sb2S6 thin films deposited onto unheated glass and silicon substrates, inclined from the flux vapor source at the deposition angles 0°, 40°, 60°, 75° and 85°. X-ray diffraction (XRD) and UV-Visible and near infrared (UV-Vis-IFR) analysis were used respectively to characterize the structural and optical properties of the layers. The influence of flux angle on the surface morphology and the microstructure was investigated by using scanning electron microscopy. The optical constants were obtained from analysis of the experimental recorded transmission and reflectance spectral data over the wavelength range 300 nm to 1800 nm. The band gaps of the synthesized thin films were found to be direct allowed transitions and increased from 1.44 eV to 1.66 eV with increasing γ from 0° to 85°, respectively. The absorption coefficients of the films are in the range of 105 cm-1 to 106 cm-1. The refractive indexes were evaluated in the transparent region in terms of the envelope method suggested by the Swanepoel model. It has been found that the refractive index decreases from 2.66 to 2.06 with increasing deposition angle from 0° to 85°, respectively. The relationship between the flux incident angles γ and the column angle β was also explored. The oblique angle deposition films showed an inclined columnar structure, with columns tilting in the direction of the incident flux. The effective packing densities of the synthesized Sn3Sb2S6 thin films were calculated using Bruggeman effective medium approximation.

  5. Microstructure and Sn crystal orientation evolution in Sn-3.5Ag lead-free solders in high temperature packaging applications

    SciTech Connect

    Zhou, Bite; Muralidharan, Govindarajan; Kurumaddali, Nalini Kanth; Parish, Chad M; Leslie, Dr Scott; Bieler, T. R.

    2014-01-01

    Understanding the reliability of eutectic Sn-3.5Ag lead-free solders in high temperature packaging applications is of significant interest in power electronics for the next generation electric grid. Large area (2.5mm 2.5mm) Sn-3.5Ag solder joints between silicon dies and direct bonded copper substrates were thermally cycled between 5 C and 200 C. Sn crystal orientation and microstructure evolution during thermal cycling were characterized by electron backscatter diffraction (EBSD) in scanning electron microscope (SEM). Comparisons are made between observed initial texture and microstructure and its evolution during thermal cycling. Gradual lattice rotation and grain boundary misorientation evolution suggested the continuous recrystallization mechanism. Recrystallization behavior was correlated with dislocation slip activities.

  6. Effects of Silver and Antimony Content in Lead-Free High-Temperature Solders of Bi-Ag and Bi-Sb on Copper Substrate

    NASA Astrophysics Data System (ADS)

    Nahavandi, M.; Hanim, M. A. Azmah; Ismarrubie, Z. N.; Hajalilou, A.; Rohaizuan, R.; Fadzli, M. Z. Shahrul

    2014-02-01

    Replacing high-temperature leaded solders with lead-free alternatives is an important issue in the electronics industry. This study investigates the viability of lead-free Bi-Ag and Bi-Sb solder alloys, ranging in composition from 1.5 to 5 wt.% Ag and Sb. The effects of melting point, wetting angle, microstructure, and morphology were analysed by differential scanning calorimetry, optical microscopy, and scanning electron microscope-energy dispersive x-ray analysis. The results showed that all tested alloys had suitable melting temperatures, ranging from 271 to 276°C. The wetting angle increased by raising the Sb content, but, in contrast, by increasing the wt.% of Ag, the wetting angle decreased. A Cu-rich phase was present in all Bi-Ag alloys, The Cu-rich phase was also present in decreasing amounts with increasing Sb, but, with 5Sb, there was no Cu-rich phase, and a Cu3Sb intermetallic compound was present in the interface and as precipitates in the solder. Grooving along Cu grain boundaries was observed at the interface for the rest of the alloys.

  7. Dynamical scaling properties of nanoporous undoped and Sb-doped SnO2 supported thin films during tri- and bidimensional structure coarsening

    NASA Astrophysics Data System (ADS)

    Santilli, C. V.; Rizzato, A. P.; Pulcinelli, S. H.; Craievich, A. F.

    2007-05-01

    The coarsening of the nanoporous structure developed in undoped and 3% Sb-doped SnO2 sol-gel dip-coated films deposited on a mica substrate was studied by time-resolved small-angle x-ray scattering (SAXS) during in situ isothermal treatments at 450 and 650°C . The time dependence of the structure function derived from the experimental SAXS data is in reasonable agreement with the predictions of the statistical theory of dynamical scaling, thus suggesting that the coarsening process in the studied nanoporous structures exhibits dynamical self-similar properties. The kinetic exponents of the power time dependence of the characteristic scaling length of undoped SnO2 and 3% Sb-doped SnO2 films are similar (α≈0.09) , this value being invariant with respect to the firing temperature. In the case of undoped SnO2 films, another kinetic exponent, α' , corresponding to the maximum of the structure function was determined to be approximately equal to three times the value of the exponent α , as expected for the random tridimensional coarsening process in the dynamical scaling regime. Instead, for 3% Sb-doped SnO2 films fired at 650°C , we have determined that α'≈2α , thus suggesting a bidimensional coarsening of the porous structure. The analyses of the dynamical scaling functions and their asymptotic behavior at high q ( q being the modulus of the scattering vector) provided additional evidence for the two-dimensional features of the pore structure of 3% Sb-doped SnO2 films. The presented experimental results support the hypotheses of the validity of the dynamic scaling concept to describe the coarsening process in anisotropic nanoporous systems.

  8. Effect of Sb addition on linear and non-linear optical properties of amorphous Ge-Se-Sn thin films

    NASA Astrophysics Data System (ADS)

    Sharma, Navjeet; Sharma, Surbhi; Sarin, Amit; Kumar, Rajesh

    2016-01-01

    Optical characterization of amorphous thin films of Ge20Sn10Se70-xSbx (x = 0, 3, 6, 9, 12, 15) has been carried out. Thin films were deposited onto pre cleaned glass substrates using thermal evaporation technique. Transmission spectra of the films were recorded, for normal incidence, in range 400-2400 nm. Refractive index of the films was calculated using the envelope method by Swanepoel. Dispersion analysis has been carried out using single effective oscillator model. Other optical constants such as absorption coefficients, extinction coefficients have also been evaluated. Tauc plots were used to evaluate the optical band gap. The refractive index has been found to be increasing while the band gap decreases with increasing Sb concentration. The observed optical behavior of the films has been explained using chemical bond approach. Cohesive energy is found to be decreasing in the present work, which reflects that bond strength decreases with the increasing content of Sb. Non-linear optical parameters (i.e. n2 and χ(3)) have been derived from linear optical parameters (i.e. n, k, Eg). Observed changes in linear and non-linear parameters have been reported in this study.

  9. Synthesis and thermal behavior of tin-based alloy (Sn-Ag-Cu) nanoparticles

    NASA Astrophysics Data System (ADS)

    Roshanghias, Ali; Yakymovych, Andriy; Bernardi, Johannes; Ipser, Herbert

    2015-03-01

    The prominent melting point depression of nanoparticles has been the subject of a considerable amount of research. For their promising applications in electronics, tin-based nano-alloys such as near-eutectic Sn-Ag-Cu (SAC) alloys have been synthesized via various techniques. However, due to issues such as particle aggregation and oxidation or introduced impurities, the application of these nano-size particles has been confined or aborted. For instance, thermal investigations by DTA/DSC in a large number of studies revealed exothermic peaks in the range of 240-500 °C, i.e. above the melting point of SAC nanoparticles, with different and quite controversial explanations for this unclear phenomenon. This represents a considerable drawback for the application of nanoparticles. Correspondingly, in the current study, the thermal stability of SAC nanoparticles has been investigated via electron microscopy, XRD, FTIR, and DSC/TG analysis. It was found that the nanoparticles consist mainly of a metallic β-Sn core and an amorphous tin hydroxide shell structure. The SnO crystalline phase formation from this amorphous shell has been associated with the exothermic peaks on the first heating cycle of the nanoparticles, followed by a disproportionation reaction into metallic Sn and SnO2.The results also revealed that the surfactant and reducing agent cannot only affect the size and size distribution of the nanoparticles, they might also alter the ratio between the amorphous shell and the crystalline core in the structure of particles.The prominent melting point depression of nanoparticles has been the subject of a considerable amount of research. For their promising applications in electronics, tin-based nano-alloys such as near-eutectic Sn-Ag-Cu (SAC) alloys have been synthesized via various techniques. However, due to issues such as particle aggregation and oxidation or introduced impurities, the application of these nano-size particles has been confined or aborted. For

  10. Reinvestigation of the influence of Se impurity on the structural and thermoelectric properties of AgSbTe2

    NASA Astrophysics Data System (ADS)

    Schmidt, M.; Wojciechowski, K. T.

    2012-06-01

    The samples with the nominal composition of AgSbTe2-xSex (x = 0.0‥ 0.1) were prepared. The structural properties were investigated by X-ray diffraction and SEM microscopy. The electrical conductivity, thermal conductivity and Seebeck coefficient have been measured within the temperature range from 300 to 675K. Heat capacity and phase transitions were studied by DSC method. We have confirmed that prolonged annealing leads to decomposition of materials and degradation of their thermoelectric properties.

  11. Ag2ZnSn(S,Se)4: A highly promising absorber for thin film photovoltaics.

    PubMed

    Chagarov, Evgueni; Sardashti, Kasra; Kummel, Andrew C; Lee, Yun Seog; Haight, Richard; Gershon, Talia S

    2016-03-14

    The growth in efficiency of earth-abundant kesterite Cu2ZnSn(S,Se)4 (CZTSSe) solar cells has slowed, due in part to the intrinsic limitations imposed by the band tailing attributed primarily to I-II antisite exchange. In this study, density functional theory simulations show that when Ag is substituted for Cu to form kesterite Ag2ZnSnSe4 (AZTSe), the I-II isolated antisite formation energy becomes 3.7 times greater than in CZTSSe, resulting in at least an order of magnitude reduction in I-II antisite density. Experimental evidence of an optoelectronically improved material is also provided. Comparison of the low-temperature photoluminescence (PL) structure of Cu(In,Ga)Se2 (CIGSe), CZTSSe, and AZTSe shows that AZTSe has a shallow defect structure with emission significantly closer to the band edge than CZTSe. Existence of suppressed band tailing is found in the proximity of the room-temperature PL peak of AZTSe to its measured band gap. The results are consistent with AZTSe being a promising alternative to CZTSSe and CIGSe for thin film photovoltaics.

  12. Ag2ZnSn(S,Se)4: A highly promising absorber for thin film photovoltaics.

    PubMed

    Chagarov, Evgueni; Sardashti, Kasra; Kummel, Andrew C; Lee, Yun Seog; Haight, Richard; Gershon, Talia S

    2016-03-14

    The growth in efficiency of earth-abundant kesterite Cu2ZnSn(S,Se)4 (CZTSSe) solar cells has slowed, due in part to the intrinsic limitations imposed by the band tailing attributed primarily to I-II antisite exchange. In this study, density functional theory simulations show that when Ag is substituted for Cu to form kesterite Ag2ZnSnSe4 (AZTSe), the I-II isolated antisite formation energy becomes 3.7 times greater than in CZTSSe, resulting in at least an order of magnitude reduction in I-II antisite density. Experimental evidence of an optoelectronically improved material is also provided. Comparison of the low-temperature photoluminescence (PL) structure of Cu(In,Ga)Se2 (CIGSe), CZTSSe, and AZTSe shows that AZTSe has a shallow defect structure with emission significantly closer to the band edge than CZTSe. Existence of suppressed band tailing is found in the proximity of the room-temperature PL peak of AZTSe to its measured band gap. The results are consistent with AZTSe being a promising alternative to CZTSSe and CIGSe for thin film photovoltaics. PMID:26979701

  13. Ag2ZnSn(S,Se)4: A highly promising absorber for thin film photovoltaics

    NASA Astrophysics Data System (ADS)

    Chagarov, Evgueni; Sardashti, Kasra; Kummel, Andrew C.; Lee, Yun Seog; Haight, Richard; Gershon, Talia S.

    2016-03-01

    The growth in efficiency of earth-abundant kesterite Cu2ZnSn(S,Se)4 (CZTSSe) solar cells has slowed, due in part to the intrinsic limitations imposed by the band tailing attributed primarily to I-II antisite exchange. In this study, density functional theory simulations show that when Ag is substituted for Cu to form kesterite Ag2ZnSnSe4 (AZTSe), the I-II isolated antisite formation energy becomes 3.7 times greater than in CZTSSe, resulting in at least an order of magnitude reduction in I-II antisite density. Experimental evidence of an optoelectronically improved material is also provided. Comparison of the low-temperature photoluminescence (PL) structure of Cu(In,Ga)Se2 (CIGSe), CZTSSe, and AZTSe shows that AZTSe has a shallow defect structure with emission significantly closer to the band edge than CZTSe. Existence of suppressed band tailing is found in the proximity of the room-temperature PL peak of AZTSe to its measured band gap. The results are consistent with AZTSe being a promising alternative to CZTSSe and CIGSe for thin film photovoltaics.

  14. Electronic structures and magnetism of Rh3Z (Z=Al, Ga, In, Si, Ge, Sn, Pb, Sb) with DO3 structures

    NASA Astrophysics Data System (ADS)

    Wang, X. T.; Dai, X. F.; Wang, L. Y.; Liu, X. F.; Wang, W. H.; Wu, G. H.; Tang, C. C.; Liu, G. D.

    2015-03-01

    We investigate the electronic structures and magnetism of Rh3Z (Z=Al, Ga, In, Si, Ge, Sn, Pb, Sb) with a DO3 structure using the first-principle calculations. The Rh3Z (Z=Si, Ge, Sn, Pb) alloys have been predicted to be half-metallic ferromagnets at their equilibrium lattice parameters. The half-metallicity of Rh3Z (Z=Si, Ge, Sn, Pb) alloys can be kept in a quite large hydrostatic strain and tetragonal distortion. The magnetic properties are discussed. The Rh3Z (Z=Si, Ge, Sn, Pb) alloys do not follow the Mt=Zt-24 rule but instead of following the Mt=Zt-28 rule (Mt is the total magnetic moment per unit cell and Zt is the valence concentration). Moreover, all the alloys investigated in this paper have a negative formation energy, which implies that they are possible to be synthesized in reality.

  15. Ternary rare-earth titanium antimonides: Phase equilibria in the RE-Ti-Sb (RE=La, Er) systems and crystal structures of RE{sub 2}Ti{sub 7}Sb{sub 12} (RE=La, Ce, Pr, Nd) and RETi{sub 3}(Sn{sub x}Sb{sub 1-x}){sub 4} (RE=Nd, Sm)

    SciTech Connect

    Bie Haiying; Devon Moore, S.H.; Piercey, Davin G.; Tkachuk, Andriy V.; Zelinska, Oksana Ya.; Mar, Arthur

    2007-08-15

    Investigations on phase relationships and crystal structures have been conducted on several ternary rare-earth titanium antimonide systems. The isothermal cross-sections of the ternary RE-Ti-Sb systems containing a representative early (RE=La) and late rare-earth element (RE=Er) have been constructed at 800 deg. C. In the La-Ti-Sb system, the previously known compound La{sub 3}TiSb{sub 5} was confirmed and the new compound La{sub 2}Ti{sub 7}Sb{sub 12} (own type, Cmmm, Z=2, a=10.5446(10) A, b=20.768(2) A, and c=4.4344(4) A) was discovered. In the Er-Ti-Sb system, no ternary compounds were found. The structure of La{sub 2}Ti{sub 7}Sb{sub 12} consists of a complex arrangement of TiSb{sub 6} octahedra and disordered fragments of homoatomic Sb assemblies, generating a three-dimensional framework in which La atoms reside. Other early rare-earth elements (RE=Ce, Pr, Nd) can be substituted in this structure type. Attempts to prepare crystals in these systems through use of a tin flux resulted in the discovery of a new Sn-containing pseudoternary phase RETi{sub 3}(Sn{sub x}Sb{sub 1-x}){sub 4} for RE=Nd, Sm (own type, Fmmm, Z=8; a=5.7806(4) A, b=10.0846(7) A, and c=24.2260(16) A for NdTi{sub 3}(Sn{sub 0.1}Sb{sub 0.9}){sub 4}; a=5.7590(4) A, b=10.0686(6) A, and c=24.1167(14) A for SmTi{sub 3}(Sn{sub 0.1}Sb{sub 0.9}){sub 4}). Its structure consists of double-layer slabs of Ti-centred octahedra stacked alternately with nets of the RE atoms; the Ti atoms are arranged in kagome nets. - Graphical abstract: La{sub 2}Ti{sub 7}Sb{sub 12} contains sectioned layers consisting of Ti-centred octahedra linked by corner- and face-sharing.

  16. Relationship between the Porco, Bolivia, Ag-Zn-Pb-Sn deposit and the Porco Caldera

    USGS Publications Warehouse

    Cunningham, C.G.

    1994-01-01

    The Porco Ag-Zn-Pb-Sn deposit, a major Ag producer in the 16th century and currently the major Zn producer in Bolivia, consists of a swarm of fissure-filling veins in the newly recognized Porco caldera. The caldera measures 5 km by 3 km and formed in response to the eruption of the 12 Ma crystal-rich dacitic Porco Tuff. The mineralization is associated with, and is probably genetically related to, the 8.6 Ma Huayna Porco stock. The Porco deposit consists of steeply dipping irregular and curvilinear veins that cut the intracaldera Porco Tuff about 1 km east of the Huayna Porco stock. Most of the veins are aligned along the structural margin (ring fracture) of the caldera. The ore deposit is zoned around the Huayna Porco stock. The primary Ag minerals are most abundant in the upper parts of the viens. Fluid inclusions in sphalerite stalactites have homogenization temperatures of about 225??C and salinities of about 8 wt% NaCl equiv. The stalactites and the presence of sparse vapor-rich inclusions suggest deposition of sphalerite under boiling conditions. -from Authors

  17. Anomalous temperature-dependent Young's modulus of a cast LAST (Pb-Sb-Ag-Te) thermoelectric material

    SciTech Connect

    Ren, Fei; Case, Eldon D; Timm, Edward J; Lara-Curzio, Edgar; Trejo, Rosa M

    2010-01-01

    Thermomechanical characterization is important to material evaluation and device design in the development of thermoelectric technology. In this study, we utilize the resonant ultrasound spectroscopy (RUS) technique to examine the elastic behavior of a cast LAST (Pb Sb Ag Te) material with a composition of Ag0.86Pb19Sb1.0Te20 between room temperature and 823 K. The temperature-dependent Young s modulus exhibits a monotonically decreasing trend with increasing temperature. However, an abnormal slope change in the Young s modulus temperature curve around 500 K is observed. In addition, hysteresis between heating and cooling data in the temperature range of 450 550 K is observed, which appears to be dependent on the heating/cooling rate during the RUS experiments such that the hysteresis disappears when the heating/cooling rate was decreased from 5 to 2 K min 1. In this study we propose an order disorder transition model for the anomalous temperature-dependent Young s modulus behavior observed in this study.

  18. Structure and Thermoelectric Properties of Te-Ag-Ge-Sb (TAGS) Materials Obtained by Reduction of Melted Oxide Substrates

    NASA Astrophysics Data System (ADS)

    Kusz, B.; Miruszewski, T.; Bochentyn, B.; Łapiński, M.; Karczewski, J.

    2016-02-01

    Ge0.77Ag0.1Sb0.13Te1 alloy was fabricated by a novel two-step route. Firstly, oxide reagents were melted at high temperature and quenched into pellets. The pellets were milled to powder and then reduced in hydrogen at various temperatures for various periods of time. Energy-dispersive x-ray analysis indicated the possibility of successful fabrication of stoichiometric thermoelectric materials from the Te-Ag-Ge-Sb system. The electrical conductivity and Seebeck coefficient have been determined over the temperature range from 20°C to 340°C in argon atmosphere. It was also shown that, for most of the fabricated samples, the crystallite size as well as electrical parameters such as the electrical conductivity, Seebeck coefficient, and figure of merit ( ZT) increased with increasing reduction time. The highest value of ZT (˜1.0 at 340°C) was obtained for samples reduced in hydrogen atmosphere at 400°C for 20 h and 40 h.

  19. Effect of Indium Content on the Melting Point, Dross, and Oxidation Characteristics of Sn-2Ag-3Bi-xIn Solders.

    PubMed

    Jeon, Ae-Jeong; Kim, Seong-Jun; Lee, Sang-Hoon; Kang, Chung-Yun

    2013-06-01

    This paper presents the effect of indium (In) content on the melting temperature, wettabililty, dross formation, and oxidation characteristics of the Sn-2Ag-3Bi-xIn alloy. The melting temperature of the Sn-2Ag-3Bi-xIn alloy (2 ≤ x ≤ 6) was lower than 473 K. The melting range between the solidus and liquidus temperatures was approximately 20 K, irrespective of the indium content. As the indium content increased, the wetting time increased slightly and the maximum wetting force remained to be mostly constant. The dross formation decreased to approximately 50% when adding 1In to Sn-2Ag-3Bi, and no dross formation was observed in the case of Sn-2Ag-3Bi-xIn alloy (x ≥ 1.5) at 523 K for 180 min. Upon approaching the inside of the oxidized solder of the Sn-2Ag-3Bi-1.5In alloy from the surface, the O and In contents decreased and the Sn content increased based on depth profiling analysis using Auger electron spectroscopy (AES). The mechanism for restraining dross (Sn oxidation) of Sn-2Ag-3Bi alloy with addition of indium may be due to surface segregation of indium. This is due to the lower formation energy of indium oxide than those of Sn oxidation. PMID:24891810

  20. Reducing Lattice Thermal Conductivity of the Thermoelectric Compound AgSbTe2 (P4/mmm) by Lanthanum Substitution: Computational and Experimental Approaches

    NASA Astrophysics Data System (ADS)

    Amouyal, Yaron

    2014-10-01

    In this study we performed lattice dynamics first-principles calculations for the promising thermoelectric (TE) compound AgSbTe2, and estimated the stability of its three polymorphs over a wide temperature range from 0 to 600 K. We calculated the vibrational density of states of the AgSbTe2 (P4/mmm) phase. The results suggested that formation of substitutional defects at Ag-sublattice sites impedes lattice vibrations, thereby reducing lattice thermal conductivity. We focused on calculations based on the Debye approximation for the compound La0.125Ag0.875SbTe2, and predicted reduction of the average sound velocity from 1684 to 1563 m s-1 as a result of La doping. This is manifested as a ca. 14% reduction in thermal conductivity. To confirm the results from computation we produced two Ag-Sb-Te-based alloys, a ternary alloy without La addition and a quaternary alloy containing La. We measured the thermal conductivity of both alloys by use of the laser flash analysis method, and, as a result of La alloying, observed a reduction in thermal conductivity from 0.92 to 0.71 W m-1 K-1 at 573 K, as calculated from first principles.

  1. AgSb(S{sub x}Se{sub 1−x}){sub 2} thin films for solar cell applications

    SciTech Connect

    González, J.O.; Shaji, S.; Avellaneda, D.; Castillo, A.G.; Roy, T.K. Das; and others

    2013-05-15

    Highlights: ► AgSb(S{sub x}Se{sub 1−x}){sub 2} thin films were formed by heating Na{sub 2}SeSO{sub 3} dipped Sb{sub 2}S{sub 3}/Ag layers. ► S/Se ratio was varied by changing the dipping time in Na{sub 2}SeSO{sub 3} solution. ► Characterized the films using XRD, XPS, SEM, Optical and electrical measurements. ► Band gap engineering of 1−1.1 eV for x = 0.51 and 0.52 respectively. ► PV Glass/FTO/CdS/AgSb(S{sub x}Se{sub 1−x}){sub 2}/C were prepared showing V{sub oc} = 410 mV, J{sub sc} = 5.7 mA/cm{sup 2}. - Abstract: Silver antimony sulfoselenide (AgSb(S{sub x}Se{sub 1−x}){sub 2}) thin films were prepared by heating glass/Sb{sub 2}S{sub 3}/Ag layers after selenization using sodium selenosulphate solution. First, Sb{sub 2}S{sub 3} thin films were deposited on glass substrates from a chemical bath containing SbCl{sub 3} and Na{sub 2}S{sub 2}O{sub 3}. Then Ag thin films were thermally evaporated onto glass/Sb{sub 2}S{sub 3}, followed by selenization by dipping in an acidic solution of Na{sub 2}SeSO{sub 3}. The duration of selenium dipping was varied as 30 min and 2 h. The heating condition was at 350 °C for 1 h in vacuum. Analysis of X-ray diffraction pattern of the thin films formed after heating showed the formation of AgSb(S{sub x}Se{sub 1−x}){sub 2}. Morphology and elemental analysis were done by scanning electron microscopy and energy dispersive X-ray detection. Depth profile of composition of the thin films was performed by X-ray Photoelectron Spectroscopy. The spectral study showed the presence of Ag, Sb, S, and Se, and the corresponding binding energy analysis confirmed the formation of AgSb(S{sub x}Se{sub 1−x}){sub 2}. Photovoltaic structures (PV) were prepared using AgSb(S{sub x}Se{sub 1−x}){sub 2} thin films as absorber and CdS thin films as window layers on FTO coated glass substrates. The PV structures were heated at 60–80 °C in air for 1 h to improve ohmic contact. Analysis of J–V characteristics of the PV structures showed V

  2. Acid blue 29 decolorization and mineralization by anodic oxidation with a cold gas spray synthesized Sn-Cu-Sb alloy anode.

    PubMed

    do Vale-Júnior, Edilson; Dosta, Sergi; Cano, Irene Garcia; Guilemany, Josep Maria; Garcia-Segura, Sergi; Martínez-Huitle, Carlos Alberto

    2016-04-01

    The elevated cost of anodic materials used in the anodic oxidation for water treatment of effluents undermines the real application of these technologies. The study of novel alternative materials more affordable is required. In this work, we report the application of Sn-Cu-Sb alloys as cheap anodic material to decolorize azo dye Acid Blue 29 solutions. These anodes have been synthesized by cold gas spray technologies. Almost complete decolorization and COD abatement were attained after 300 and 600 min of electrochemical treatment, respectively. The influence of several variables such as supporting electrolyte, pH, current density and initial pollutant concentration has been investigated. Furthermore, the release and evolution of by-products was followed by HPLC to better understand the oxidative power of Sn-Cu-Sb electrodes.

  3. Size effect model on kinetics of interfacial reaction between Sn-xAg-yCu solders and Cu substrate.

    PubMed

    Huang, M L; Yang, F

    2014-01-01

    The downsizing of solder balls results in larger interfacial intermetallic compound (IMC) grains and less Cu substrate consumption in lead-free soldering on Cu substrates. This size effect on the interfacial reaction is experimentally demonstrated and theoretically analyzed using Sn-3.0Ag-0.5Cu and Sn-3.5Ag solder balls. The interfacial reaction between the Sn-xAg-yCu solders and Cu substrates is a dynamic response to a combination of effects of interfacial IMC growth, Cu substrate consumption and composition variation in the interface zone. A concentration gradient controlled (CGC) kinetics model is proposed to explain the combined effects. The concentration gradient of Cu at the interface, which is a function of solder volume, initial Cu concentration and reaction time, is the root cause of the size effect. We found that a larger Cu concentration gradient results in smaller Cu(6)Sn(5) grains and more consumption of Cu substrate. According to our model, the growth kinetics of interfacial Cu(6)Sn(5) obeys a t(1/3) law when the molten solder has approached the solution saturation, and will be slower otherwise due to the interfering dissolution mechanism. The size effect introduced in this model is supported by a good agreement between theoretical and experimental results. Finally, the scope of application of this model is discussed. PMID:25408359

  4. Size effect model on kinetics of interfacial reaction between Sn-xAg-yCu solders and Cu substrate

    NASA Astrophysics Data System (ADS)

    Huang, M. L.; Yang, F.

    2014-11-01

    The downsizing of solder balls results in larger interfacial intermetallic compound (IMC) grains and less Cu substrate consumption in lead-free soldering on Cu substrates. This size effect on the interfacial reaction is experimentally demonstrated and theoretically analyzed using Sn-3.0Ag-0.5Cu and Sn-3.5Ag solder balls. The interfacial reaction between the Sn-xAg-yCu solders and Cu substrates is a dynamic response to a combination of effects of interfacial IMC growth, Cu substrate consumption and composition variation in the interface zone. A concentration gradient controlled (CGC) kinetics model is proposed to explain the combined effects. The concentration gradient of Cu at the interface, which is a function of solder volume, initial Cu concentration and reaction time, is the root cause of the size effect. We found that a larger Cu concentration gradient results in smaller Cu6Sn5 grains and more consumption of Cu substrate. According to our model, the growth kinetics of interfacial Cu6Sn5 obeys a t1/3 law when the molten solder has approached the solution saturation, and will be slower otherwise due to the interfering dissolution mechanism. The size effect introduced in this model is supported by a good agreement between theoretical and experimental results. Finally, the scope of application of this model is discussed.

  5. Comparison of Extensive Thermal Cycling Effects on Microstructure Development in Micro-alloyed Sn-Ag-Cu Solder Joints

    SciTech Connect

    Anderson, Iver E.; Boesenberg, Adam; Harringa, Joel; Riegner, David; Steinmetz, Andrew; Hillman, David

    2011-09-28

    Pb-free solder alloys based on the Sn-Ag-Cu (SAC) ternary eutectic have promise for widespread adoption across assembly conditions and operating environments, but enhanced microstructural control is needed. Micro-alloying with elements such as Zn was demonstrated for promoting a preferred solidification path and joint microstructure earlier in simple (Cu/Cu) solder joints studies for different cooling rates. This beneficial behavior now has been verified in reworked ball grid array (BGA) joints, using dissimilar SAC305 (Sn-3.0Ag-0.5Cu, wt.%) solder paste. After industrial assembly, BGA components joined with Sn-3.5Ag-0.74Cu-0.21Zn solder were tested in thermal cycling (-55 C/+125 C) along with baseline SAC305 BGA joints beyond 3000 cycles with continuous failure monitoring. Weibull analysis of the results demonstrated that BGA components joined with SAC + Zn/SAC305 have less joint integrity than SAC305 joints, but their lifetime is sufficient for severe applications in consumer, defense, and avionics electronic product field environments. Failure analysis of the BGA joints revealed that cracking did not deviate from the typical top area (BGA component side) of each joint, in spite of different Ag3Sn blade content. Thus, SAC + Zn solder has not shown any advantage over SAC305 solder in these thermal cycling trials, but other characteristics of SAC + Zn solder may make it more attractive for use across the full range of harsh conditions of avionics or defense applications.

  6. A study of the microstructure, thermal properties and wetting kinetics of Sn-3Ag- xZn lead-free solders

    NASA Astrophysics Data System (ADS)

    Li, Yulong; Yu, Xiao; Sekulic, Dusan P.; Hu, Xiaowu; Yan, Ming; Hu, Ronghua

    2016-06-01

    Microstructure, thermal properties and wetting kinetics of Sn-3Ag- xZn solders ( x = 0.4, 0.6, 0.8, 1, 2 and 4 wt%) were systematically investigated. The results indicate that a small amount of Zn (Zn wt% ≤ 1 wt%) has a rather moderate effect on the microstructure morphology of the Sn-3Ag- xZn solders. The microstructures are composed of a β-Sn phase and the mixture of Ag3Sn and ζ-AgZn particles. However, the β-Sn phase reduces its volume fraction in the entire microstructure and the intermetallic compounds population increases with the increasing of Zn content. The microstructure is dramatically changed with a further increase in the Zn content. The γ-AgZn phase is formed in a Sn-3Ag-2Zn solder. The ɛ-AgZn phase is formed in a Sn-3Ag-4Zn solder. The melting temperature and the undercooling of the Sn-3Ag- xZn solder alloys decrease with the increase in Zn content, reach to a minimum value when the content of Zn is 1 wt%, and then increase with further increase in Zn content. The Sn-3Ag-1Zn demonstrates the minimum value of 228.13 °C in the melting temperature and 13.87 °C in undercooling. The wetting kinetics of the main spreading stage features the power law of R n ~ t ( n = 1), which is controlled by chemical reactions at the triple line.

  7. Novel mixed metal Ag(I)-Sb(III)-metallotherapeutics of the NSAIDs, aspirin and salicylic acid: Enhancement of their solubility and bioactivity by using the surfactant CTAB.

    PubMed

    Gkaniatsou, E I; Banti, C N; Kourkoumelis, N; Skoulika, S; Manoli, M; Tasiopoulos, A J; Hadjikakou, S K

    2015-09-01

    The already known Ag(I)-Sb(III) compound of the formula {Ag(Ph3Sb)3(NO3)} (1) and two novel mixed metal Ag(I)-Sb(III) metallotherapeutics of the formulae {Ag(Ph3Sb)3(SalH)}(2) and {Ag(Ph3Sb)3(Asp)}(3) (SalH2=salicylic acid, AspH=aspirin or 2-acetylsalicylic acid and Ph3Sb=triphenyl antimony(III)) have been synthesised and characterised by m.p., vibrational spectroscopy (mid-FT-IR), (13)C-,(1)H-NMR, UV-visible (UV-vis) spectroscopic techniques, high resolution mass spectroscopy (HRMS) and X-ray crystallography. Compounds 1,-3 were treated with the surfactant cetyltrimethylammonium bromide (CTAB) in order to enhance their solubility and as a consequence their bioactivity. The resulting micelles a-c were characterised with X-ray powder diffraction (XRPD) analysis, X-ray fluorescence (XRF) spectroscopy, Energy-dispersive X-ray spectroscopy (EDX), conductivity, Thermal gravimetry-differential thermal analysis (TG-DTA), and atomic absorption. Compounds 1-3 and the relevant micelles a-c were evaluated for their in vitro cytotoxic activity against human cancer cell lines: MCF-7 (breast, estrogen receptor (ER) positive), MDA-MB-231 (breast, ER negative) and MRC-5 (normal human fetal lung fibroblast cells) with sulforhodamine B (SRB) colorimetric assay. The results show significant increase in the activity of micelles compared to that of the initial compounds. Moreover, micelles exhibited lower activity against normal cells than tumor cells. The binding affinity of a-c towards the calf thymus (CT)-DNA, lipoxygenase (LOX) and glutathione (GSH) was studied by the fluorescent emission light and UV-vis spectroscopy.

  8. Mechanistic Prediction of the Effect of Microstructural Coarsening on Creep Response of SnAgCu Solder Joints

    NASA Astrophysics Data System (ADS)

    Mukherjee, S.; Chauhan, P.; Osterman, M.; Dasgupta, A.; Pecht, M.

    2016-07-01

    Mechanistic microstructural models have been developed to capture the effect of isothermal aging on time dependent viscoplastic response of Sn3.0Ag0.5Cu (SAC305) solders. SnAgCu (SAC) solders undergo continuous microstructural coarsening during both storage and service because of their high homologous temperature. The microstructures of these low melting point alloys continuously evolve during service. This results in evolution of creep properties of the joint over time, thereby influencing the long term reliability of microelectronic packages. It is well documented that isothermal aging degrades the creep resistance of SAC solder. SAC305 alloy is aged for (24-1000) h at (25-100)°C (~0.6-0.8 × T melt). Cross-sectioning and image processing techniques were used to periodically quantify the effect of isothermal aging on phase coarsening and evolution. The parameters monitored during isothermal aging include size, area fraction, and inter-particle spacing of nanoscale Ag3Sn intermetallic compounds (IMCs) and the volume fraction of micronscale Cu6Sn5 IMCs, as well as the area fraction of pure tin dendrites. Effects of microstructural evolution on secondary creep constitutive response of SAC305 solder joints were then modeled using a mechanistic multiscale creep model. The mechanistic phenomena modeled include: (1) dispersion strengthening by coarsened nanoscale Ag3Sn IMCs in the eutectic phase; and (2) load sharing between pro-eutectic Sn dendrites and the surrounding coarsened eutectic Sn-Ag phase and microscale Cu6Sn5 IMCs. The coarse-grained polycrystalline Sn microstructure in SAC305 solder was not captured in the above model because isothermal aging does not cause any significant change in the initial grain size and orientation of SAC305 solder joints. The above mechanistic model can successfully capture the drop in creep resistance due to the influence of isothermal aging on SAC305 single crystals. Contribution of grain boundary sliding to the creep strain of

  9. Indium tin oxide-free transparent and conductive electrode based on SnO{sub x} | Ag | SnO{sub x} for organic solar cells

    SciTech Connect

    Bou, A.; Torchio, Ph. Barakel, D.; Thierry, F.; Sangar, A.; Thoulon, P.-Y.; Ricci, M.

    2014-07-14

    A SnO{sub x} | Ag | SnO{sub x} multilayer deposited by E-beam evaporation is proposed as transparent anode for a (poly-3-hexylthiophene):[6,6]-phenyl-C{sub 61}-butyric acid methyl ester (P3HT:PCBM) bulk heterojunction based Organic Solar Cell (OSC). Such multilayers are studied and manufactured with the objective to give to the electrode its best conductivity and transparency in the visible spectral range. A transfer matrix method numerical optimization of the thicknesses of each layer of the electrode is developed to limit the number of test samples which would have been manufactured whether an empirical method was chosen. Optical characterization of the deposited SnO{sub x} and Ag thin films is performed to determine the dispersion of the complex refractive indices which are used as input parameters in the model. A satisfying agreement between numerical and experimental optical properties is found. The bare tri-layer electrodes show low sheet resistance (as low as 6.7 Ω/□) and the whole Glass | SnO{sub x} | Ag | SnO{sub x} structure presents a mean transparency on 400–700 nm spectral band as high as 67%. The multilayer is then numerically studied as anode for a P3HT:PCBM bulk heterojunction based OSC. Intrinsic absorption inside the sole active layer is calculated giving the possibility to perform optical optimization on the intrinsic absorption efficiency inside the active area by considering the media embedding the electrodes. An additional study using the morphology of the silver inserted between both oxide layers as input data is performed with a finite difference time domain 3D-method to improve the accordance between optical measurements and numerical results.

  10. Theoretical Evaluation of Cu-Sn-S and Cu-Sb-S Based Solar Absorbers for Earth-Abundant Thin-Film Solar Cells

    NASA Astrophysics Data System (ADS)

    Zawadzki, Pawel; Peng, Haowei; Zakutayev, Andriy; Lany, Stephan

    2013-03-01

    Current thin-film solar absorbers such as Cu(In/Ga)Se2 or CdTe, although remarkably efficient, incorporate limited-supply elements like indium or tellurium. Meeting the cost competiveness criterion necessary for a large-scale deployment of thin-film PV technologies requires development of new earth-abundant solar absorbers. In an effort to accelerate such development we combine first principles theory and high throughput experiments to explore In-free ternary copper chalcogenides. As part of the theoretical evaluation, we study the Cu2SnS3, Cu4SnS4, CuSbS2 and Cu3SbS3 based compounds formed by isovalent alloying on Sn, Sb, and S sites. For this set of materials we predict band-structures and optical absorption coefficients and demonstrate the feasibility of achieving the optimal band gap of 1.3 eV for a single junction cell and a high optical absorption of ~104 cm-1 at Eg+0.2 eV. We additionally perform defect studies to elucidate the doping trends within this class of materials. The project ``Rapid Development of Earth-abundant Thin Film Solar Cells'' is supported as a part of the SunShot initiative by the U. S. Department of Energy, Office of Energy Efficiency and Renewable Energy under Contract No. DE-AC36-08GO28308 to NREL.

  11. A study on 100 MeV O7+ irradiated SnO2/Ag/SnO2 multilayer as transparent electrode for flat panel display application

    NASA Astrophysics Data System (ADS)

    Sharma, Vikas; Singh, Satyavir; Asokan, K.; Sachdev, Kanupriya

    2016-07-01

    The multilayer thin films of SnO2/Ag/SnO2 were deposited using electron-beam and thermal evaporation for flat panel display application. The as-prepared SnO2/Ag/SnO2 specimen was irradiated with 100 MeV O7+ ions by varying the fluences 1 × 1012 and 5 × 1012 ions/cm2. The pristine and irradiated films were investigated using XRD, SEM, AFM and Raman to find out modification in the structure and surface morphology of the films. UV-Vis and Hall measurement techniques were used to investigate the optical and electrical properties respectively. It was observed that the roughness of the film after irradiation (for the fluence of 1 × 1012 ions/cm2) ​ decreased to 0.68 nm from 1.6 nm and showed an increase in roughness to 1.35 nm on increasing the fluence to 5 × 1012 ions/cm2. This oxide/metal/oxide structure fulfills the basic requirements of a TCE, like high-transmittance >75% for pristine and >80% for the fluence of 1 × 1012 ions/cm2 over a broad spectrum of visible light for practical applications. The multilayer structure shows change in the electrical resistivity from 1.6 × 10-3 Ω cm to 6.3 × 10-3 Ω cm after irradiation.

  12. Effect of Sb Segregation on Conductance and Catalytic Activity at Pt/Sb-Doped SnO2 Interface: A Synergetic Computational and Experimental Study.

    PubMed

    Fu, Qiang; Colmenares Rausseo, Luis César; Martinez, Umberto; Dahl, Paul Inge; García Lastra, Juan Maria; Vullum, Per Erik; Svenum, Ingeborg-Helene; Vegge, Tejs

    2015-12-23

    Antimony-doped tin dioxide (ATO) is considered a promising support material for Pt-based fuel cell cathodes, displaying enhanced stability over carbon-based supports. In this work, the effect of Sb segregation on the conductance and catalytic activity at Pt/ATO interface was investigated through a combined computational and experimental study. It was found that Sb-dopant atoms prefer to segregate toward the ATO/Pt interface. The deposited Pt catalysts, interestingly, not only promote Sb segregation, but also suppress the occurrence of Sb(3+) species, a charge carrier neutralizer at the interface. The conductivity of ATO was found to increase, to a magnitude close to that of activated carbon, with an increment of Sb concentration before reaching a saturation point around 10%, and then decrease, indicating that Sb enrichment at the ATO surface may not always favor an increment of the electric current. In addition, the calculation results show that the presence of Sb dopants in ATO has little effect on the catalytic activity of deposited three-layer Pt toward the oxygen reduction reaction, although subsequent alloying of Pt and Sb could lower the corresponding catalytic activity. These findings help to support future applications of ATO/Pt-based materials as possible cathodes for proton exchange membrane fuel cell applications with enhanced durability under practical applications. PMID:26615834

  13. Characteristics of SnO2:Sb Films as Transparent Conductive Electrodes of Flexible Inverted Organic Solar Cells.

    PubMed

    Lee, Jaehyeong; Kim, Nam-Hoon; Park, Yong Seob

    2016-05-01

    Antimony-doped tin oxide (ATO) films were deposited on polyethersulfone (PES) substrates by means of a radio frequency (RF) magnetron sputtering method, using a SnO2 target mixed with 6 wt% Sb at room temperature and using various RF powers; these films were used as transparent electrodes in inverted organic solar cells (IOSC). We investigated the structural, optical, and electrical properties of the resulting films by means of various analyses, including X-ray diffraction (XRD), UV-visible spectroscopy, and Hall effect measurements. The crystallinity and conductivity of the ATO films were increased by increasing the RF power used. Based on the experimental data acquired, we fabricated IOSCs based on ATO electrodes deposited by using various conditions. Each IOSC device was composed of an ATO electrode, a ZnO buffer layer, a photoactive layer (P3HT:PCBM), and an Al cathode. The IOSC based on an ATO electrode fabricated at the RF power of 160 W exhibited good device performance due to the electrode's high conductivity and crystallinity. PMID:27483854

  14. Infrared spectra of CH3-MH through methane activation by laser-ablated Sn, Pb, Sb, and Bi atoms.

    PubMed

    Cho, Han-Gook; Andrews, Lester

    2012-08-23

    Methane activation has been carried out by laser-ablated Sn, Pb, Sb, and Bi atoms. All four metals generate the insertion complex (CH(3)-MH), but subsequent H-migration from C to M to form CH(2)-MH(2) and CH-MH(3) complexes is not observed. Our previous and present experimental and computational results indicate that the higher oxidation state complexes become less favored with increasing atomic mass in groups 14 and 15, which is opposite the general trend found for transition metals. The C-H bond insertion evidently occurs during reaction on sample condensation, and the product dissociates on broad-band photolysis afterward. The insertion complex contains a near right angle C-M-H moiety because of high p contribution from the metal center to the C-M and M-H bonds unlike many transition-metal analogues. The computed methylidene structures for these main group metals are not agostic possibly because of the absence of valence d-orbitals.

  15. Effect of Ag-content on structure, corrosion behaviour and mechanical properties of Sn-9Zn lead-free solder alloy

    NASA Astrophysics Data System (ADS)

    Said Gouda, El; Abdel Aziz, H.; El Gendy, Y.; Saad Allah, F.; Hammam, M.

    2010-12-01

    The effect of (0.5-3.5) wt.% Ag additions on microstructure, melting, corrosion and mechanical properties of Sn-9Zn eutectic lead-free solder alloy has been studied and analyzed. The study included X-ray diffraction and scanning electron microscopy (SEM) to identify the microstructure of these alloys. The results showed that, continuous additions of Ag caused formation of Ag-Zn and Ag-Sn compounds which led to decrease the precipitations of Zn in Sn-matrix. These compounds led to increase the melting point of the alloys, which confirmed by the formation of small endothermic peaks in the higher temperature range followed the main peak of the DTA curves. Also, the DTA measurements confirmed that the alloy of composition Sn-9Zn-3.5Ag is the ternary eutectic alloy. Vicker's micro-hardness number of Sn-9Zn alloy increases with small additions of 0.5 and 1 wt.% Ag. Furthermore, it decreases to lower values with further increase of Ag content. Also, micro-creep behaviour, creep rate and corrosion behaviour of the Sn-9Zn-Ag alloys have been measured at room temperature.

  16. Nanoscale nuclei in phase change materials: Origin of different crystallization mechanisms of Ge{sub 2}Sb{sub 2}Te{sub 5} and AgInSbTe

    SciTech Connect

    Lee, Bong-Sub Bogle, Stephanie N.; Darmawikarta, Kristof; Abelson, John R.; Shelby, Robert M.; Retter, Charles T.; Burr, Geoffrey W.; Raoux, Simone

    2014-02-14

    Phase change memory devices are based on the rapid and reversible amorphous-to-crystalline transformations of phase change materials, such as Ge{sub 2}Sb{sub 2}Te{sub 5} and AgInSbTe. Since the maximum switching speed of these devices is typically limited by crystallization speed, understanding the crystallization process is of crucial importance. While Ge{sub 2}Sb{sub 2}Te{sub 5} and AgInSbTe show very different crystallization mechanisms from their melt-quenched states, the nanostructural origin of this difference has not been clearly demonstrated. Here, we show that an amorphous state includes different sizes and number of nanoscale nuclei, after thermal treatment such as melt-quenching or furnace annealing is performed. We employ fluctuation transmission electron microscopy to detect nanoscale nuclei embedded in amorphous materials, and use a pump-probe laser technique and atomic force microscopy to study the kinetics of nucleation and growth. We confirm that melt-quenched amorphous Ge{sub 2}Sb{sub 2}Te{sub 5} includes considerably larger and more quenched-in nuclei than its as-deposited state, while melt-quenched AgInSbTe does not, and explain this contrast by the different ratio between quenching time and nucleation time in these materials. In addition to providing insights to the crystallization process in these technologically important devices, this study presents experimental illustrations of temperature-dependence of nucleation rate and growth speed, which was predicted by theory of phase transformation but rarely demonstrated.

  17. Understanding nanostructures in thermoelectric materials: an electron microscopy study of AgPb{sub 18}SbSe{sub 20} crystals.

    SciTech Connect

    Lioutas, C. B.; Frangis, N.; Todorov, I.; Chung, D. Y.; Kanatzidis, M. G.; Materials Science Division; Aristotle Univ. Thessaloniki; Northwestern Univ.

    2010-01-01

    The characterization and understanding of the presence of nanostructuring in bulk thermoelectric materials requires real space atomic level information. We report electron diffraction and high-resolution transmission electron microscopy studies of crystals of the system AgPb{sub 18}SbSe{sub 20} (=18PbSe + AgSbSe{sub 2}) which reveal that this system is nanostructured rather than a solid solution. Nanocrystals of varying sizes are found, endotaxially grown in the matrix of PbSe (phase A), and consist of two phases, a cubic one (phase B) and a tetragonal one (phase C). Well-defined coherent interfaces between the phases in the same nanocrystals are observed. On the basis of the results of combined electron crystallography techniques, we propose reasonable structural models for the phases B and C. There are significant differences in the nanostructuring chemistry between AgPb{sub 18}SbSe{sub 20} and the telluride analog AgPb{sub 18}SbTe{sub 20} (LAST-18).

  18. Syntheses and characterization of one-dimensional alkali metal antimony(III) thiostannates(IV), A{sub 2}Sb{sub 2}Sn{sub 3}S{sub 10} (A=K, Rb, Cs)

    SciTech Connect

    Yohannan, Jinu P.; Vidyasagar, Kanamaluru

    2015-01-15

    Three new isostructural quaternary antimony(III) thiostannates(IV), A{sub 2}Sb{sub 2}Sn{sub 3}S{sub 10} (A=K, Rb, Cs) have been synthesized by using alkali metal thiosulfate flux and structurally characterized by X-ray diffraction. Their structures contain A{sup +} ions around the [Sb{sub 2}Sn{sub 3}S{sub 10}]{sup 2−} chains, which are built from SbS{sub 3} pyramids, SnS{sub 6} octahedra and SnS{sub 4} tetrahedra. Raman and Mössbauer spectroscopic measurements corroborate the oxidation states and coordination environments of Sb(III) and Sn(IV). All three compounds are wide band gap semiconductors. Potassium compound undergoes partial exchange with strontium, cadmium and lead ions. - Graphical abstract: Syntheses, crystal structure, spectroscopic and partial ion-exchange studies of new one-dimensional alkali metal antimony(III) thiostannates(IV), A{sub 2}Sb{sub 2}Sn{sub 3}S{sub 10} (A=K, Rb, Cs) are described. - Highlights: • Syntheses of new alkali metal antimony(III) thiostannates(IV), A{sub 2}Sb{sub 2}Sn{sub 3}S{sub 10} (A=K, Rb, Cs). • Wide band gap semiconductors with one-dimensional structure. • Topotactic partial exchange of K{sup +} ions of K{sub 2}Sb{sub 2}Sn{sub 3}S{sub 10} with Sr{sup 2+}, Cd{sup 2+} and Pb{sup 2+} ions.

  19. Electronic and Thermoelectric Properties of Layered Sn- and Pb-Doped Ge2Sb2Te5 Alloys Using First Principle Calculations

    NASA Astrophysics Data System (ADS)

    Singh, Janpreet; Singh, Gurinder; Kaura, Aman; Tripathi, S. K.

    2016-06-01

    A computational study on stable hexagonal phase of undoped, and Sn- and Pb-doped Ge2Sb2Te5 (GST) phase change materials has been carried out. The electronic structure, lattice dynamics and thermoelectric properties of doped GST have been extensively investigated using ab initio methods with virtual crystal approximation. The hexagonal symmetry of the GST is maintained with the addition of Sn and Pb dopants. The lattice parameters and atomic volume of the Sn-doped GST structure is larger than that of the undoped GST. Electronic band structure calculations show that there is an increase in band gap with the increase in the concentration of Sn (≤4.4 at.%). However, with the addition of a very small amount of Pb, there is a continuous decrease in lattice parameters and band gap values. The calculated energy band structure is then used in combination with the Boltzmann transport equation to calculate the thermoelectric parameters of GST and Sn- and Pb-doped materials. Seebeck coefficient ( S), electronic thermal conductivity ( κ e) and the thermoelectric figure-of-merit ( ZT) have been calculated with the help of BoltzTraP code. It was found that the thermoelectric properties of GST are enhanced with the addition of Sn.

  20. Encapsulating Sn(x)Sb Nanoparticles in Multichannel Graphene-Carbon Fibers As Flexible Anodes to Store Lithium Ions with High Capacities.

    PubMed

    Tang, Xuan; Yan, Feilong; Wei, Yuehua; Zhang, Ming; Wang, Taihong; Zhang, Tianfang

    2015-10-01

    SnxSb intermetallic composites as high theoretical capacities anodes for lithium ion batteries (LIBs) suffer from the quick capacity fading owing to their huge volume change. In this study, flexible mats made up of SnxSb-graphene-carbon porous multichannel nanofibers are fabricated by an electrospinning method and succedent annealing treatment at 700 °C. The flexible mats as binder-free anodes show a specific capacity of 729 mA h/g in the 500th cycle at a current density of 0.1 A/g, which is much higher than those of graphene-carbon nanofibers, pure carbon nanofibers, and SnxSb-graphene-carbon nanofibers at the same cycle. The flexible mats could provide a reversible capacity of 381 mA h/g at 2 A/g, also higher than those of nanofibers, graphene-carbon nanofibers, and SnxSb-carbon nanofibers. It is found that the suitable nanochannels could accommodate the volume expansion to achieve a high specific capacity. Besides, the graphene serves as both conductive and mechanical-property additives to enhance the rate capacity and flexibility of the mats. The electrospinning technique combined with graphene modification may be an effective method to produce flexible electrodes for fuel cells, lithium ion batteries, and super capacitors.

  1. Effect of Annealing on Microstructure and Thermoelectric Properties of Sb-Doped Mg2Si0.5Sn0.5 Solid Solution

    NASA Astrophysics Data System (ADS)

    Liu, Ji-Wei; Song, Minghui; Takeguchi, Masaki; Tsujii, Naohito; Isoda, Yukihiro

    2016-01-01

    A 0.33 mol.% Sb-doped Mg2Si0.5Sn0.5 solid solution was synthesized by combining a liquid-solid reaction and hot-pressing process. The effect of annealing (1068 K, 250 h) on microstructure and thermoelectric properties of the solid solution was studied by x-ray diffraction (XRD), scanning electron microscopy, electron probe microanalysis, transmission electron microscopy, and thermoelectric measurements. The successful synthesis of the solid solution with an antifluorite structure was confirmed by XRD. The as-prepared sample contained Si, Sn, and MgO inclusions tens of nanometers in size. After annealing, Si and Sn inclusions disappeared, while the MgO nanoparticles remained almost unchanged; the charge carrier concentration and electrical conductivity decreased and the lattice thermal conductivity increased. As a result, the thermoelectric figure of merit ZT ˜ 0.34 at 394 K for the as-prepared sample deteriorated to ˜0.24 at 388 K after the annealing. The results suggest the presence of a high density of point defects, such as Mg interstitials in the as-prepared sample. The density of these Mg interstitials was reduced by the annealing, thereby affecting the charge carrier concentration and electrical conductivity. The increase in the lattice thermal conductivity upon annealing is attributed to the disappearance of point defects, grain boundaries (grain growth) and Si and Sn inclusions, which all act as phonon scattering centers. Thus, point defects and nanoinclusions might be important for optimizing the thermoelectric properties of a material. This work provides new insights into the effect of annealing on the microstructure and its relationship with the thermoelectric properties of Sb-doped Mg2Si0.5Sn0.5 solid solutions. It also provides hints for developing Mg2Si0.5Sn0.5-based materials with superior thermoelectric properties.

  2. Contrasting the Role of Mg and Ba Doping on the Microstructure and Thermoelectric Properties of p-Type AgSbSe2.

    PubMed

    Liu, Zihang; Shuai, Jing; Geng, Huiyuan; Mao, Jun; Feng, Yan; Zhao, Xu; Meng, Xianfu; He, Ran; Cai, Wei; Sui, Jiehe

    2015-10-21

    Microstructure has a critical influence on the mechanical and functional properties. For thermoelectric materials, deep understanding of the relationship of microstructure and thermoelectric properties will enable the rational optimization of the ZT value and efficiency. Herein, taking AgSbSe2 as an example, we first report a different role of alkaline-earth metal ions (Mg(2+) and Ba(2+)) doping in the microstructure and thermoelectric properties of p-type AgSbSe2. For Mg doping, it monotonously increases the carrier concentration and then reduces the electrical resistivity, leading to a substantially enhanced power factor in comparison to those of other dopant elements (Bi(3+), Pb(2+), Zn(2+), Na(+), and Cd(2+)) in the AgSbSe2 system. Meanwhile, the lattice thermal conductivity is gradually suppressed by point defects scattering. In contrast, the electrical resistivity first decreases and then slightly rises with the increased Ba-doping concentrations due to the presence of BaSe3 nanoprecipitates, exhibiting a different variation tendency compared with the corresponding Mg-doped samples. More significantly, the total thermal conductivity is obviously reduced with the increased Ba-doping concentrations partially because of the strong scattering of medium and long wavelength phonons via the nanoprecipitates, consistent with the theoretical calculation and analysis. Collectively, ZT value ∼1 at 673 K and calculated leg efficiency ∼8.5% with Tc = 300 K and Th = 673 K are obtained for both AgSb0.98Mg0.02Se2 and AgSb0.98Ba0.02Se2 samples.

  3. Microstructural behavior of iron and bismuth added Sn-1Ag-Cu solder under elevated temperature aging

    NASA Astrophysics Data System (ADS)

    Ali, Bakhtiar; Sabri, Mohd Faizul Mohd; Jauhari, Iswadi

    2016-07-01

    An extensive study was done to investigate the microstructural behavior of iron (Fe) and bismuth (Bi) added Sn-1Ag-0.5Cu (SAC105) under severe thermal aging conditions. The isothermal aging was done at 200 °C for 100 h, 200 h, and 300 h. Optical microscopy with cross-polarized light revealed that the grain size significantly reduces with Fe/Bi addition to the base alloy SAC105 and remains literally the same after thermal aging. The micrographs of field emission scanning electron microscopy (FESEM) with backscattered electron detector and their further analysis via imageJ software indicated that Fe/Bi added SAC105 showed a significant reduction in the IMCs size (Ag3Sn and Cu6Sn5), especially the Cu6Sn5 IMCs, as well as β-Sn matrix and a refinement in the microstructure, which is due to the presence of Bi in the alloys. Moreover, their microstructure remains much more stable under severe thermal aging conditions, which is because of the presence of both Fe and Bi in the alloy. The microstructural behavior suggests that Fe/Bi modified SAC105 would have much improved reliability under severe thermal environments. These modified alloys also have relatively low melting temperature and low cost.

  4. Enhancement of visible light activity in Ag modified SnO{sub 2}/TiO{sub 2}

    SciTech Connect

    Zhou, Xiufeng; Cao, Jialei; Xu, Mengfei; Wang, Zuoshan; Lu, Juan

    2013-11-15

    Graphical abstract: - Highlights: • Ag modified SnO{sub 2}/TiO{sub 2} nanoparticles were synthesized by a modified sol–gel method. • As-prepared samples have a small and uniform particle size of about 20 nm. • As-prepared samples exhibit an excellent photo-catalytic efficiency on the degradation of MB. • As-prepared samples maintain high photo-chemical stability after 5 catalytic cycles. - Abstract: Ag modified SnO{sub 2}/TiO{sub 2} nanoparticles were successfully prepared by a modified sol–gel method, without adding any acid or alkali. The entire preparation differs from the traditional sol–gel synthesis of TiO{sub 2} that the reaction can get controlled by adjusting the flow speed of water vapor. Ultraviolet–visible diffuse reflectance spectra (UV–vis) and spin-trapping electron paramagnetic resonance (EPR) were used to forecast the photocatalytic activity of the samples, and the results were proved by the degradation of methylene blue solution under visible light. Compared with pure TiO{sub 2}, as-prepared Ag modified SnO{sub 2}/TiO{sub 2} nanoparticles exhibited not only an enhanced photocatalytic activity but also an improved stability. Among all of samples, the composite with 0.5% of Ag and 1% of Sn showed the best photocatalytic performance and stability. Further increasing the Ag proportion will result in the decrease of the photocatalytic activity. A relative mechanism was proposed and discussed in detail.

  5. XPS, TDS, and AFM studies of surface chemistry and morphology of Ag-covered L-CVD SnO2 nanolayers.

    PubMed

    Kwoka, Monika; Ottaviano, Luca; Koscielniak, Piotr; Szuber, Jacek

    2014-01-01

    This is well known that the selectivity and sensitivity of tin dioxide (SnO2) thin film sensors for the detection of low concentration of volatile sulfides such as H2S in air can be improved by small amount of Ag additives. In this paper we present the results of comparative X-ray photoelectron spectroscopy (XPS), thermal desorption spectroscopy (TDS), and atomic force microscopy (AFM) studies of the surface chemistry and morphology of SnO2 nanolayers obtained by laser-enhanced chemical vapor deposition (L-CVD) additionally covered with 1 monolayer (ML) of Ag. For as deposited SnO2 nanolayers, a mixture of tin oxide (SnO) and tin dioxide (SnO2) with the [C]/[Sn] ratio of approximately 1.3 was observed. After dry air exposure, the [O]/[Sn] ratio slightly increased to approximately 1.55. Moreover, an evident increasing of C contamination was observed with [C]/[Sn] ratio of approximately 3.5. After TDS experiment, the [O]/[Sn] ratio goes back to 1.3, whereas C contamination evidently decreases (by factor of 3). Simultaneously, the Ag concentration after air exposure and TDS experiment subsequently decreased (finally by factor of approximately 2), which was caused by the diffusion of Ag atoms into the subsurface layers related to the grain-type surface morphology of Ag-covered L-CVD SnO2 nanolayers, as confirmed by XPS ion depth profiling studies. The variation of surface chemistry of the Ag-covered L-CVD SnO2 after air exposure observed by XPS was in a good correlation with the desorption of residual gases from these nanolayers observed in TDS experiments. PMID:24936162

  6. XPS, TDS, and AFM studies of surface chemistry and morphology of Ag-covered L-CVD SnO2 nanolayers

    PubMed Central

    2014-01-01

    This is well known that the selectivity and sensitivity of tin dioxide (SnO2) thin film sensors for the detection of low concentration of volatile sulfides such as H2S in air can be improved by small amount of Ag additives. In this paper we present the results of comparative X-ray photoelectron spectroscopy (XPS), thermal desorption spectroscopy (TDS), and atomic force microscopy (AFM) studies of the surface chemistry and morphology of SnO2 nanolayers obtained by laser-enhanced chemical vapor deposition (L-CVD) additionally covered with 1 monolayer (ML) of Ag. For as deposited SnO2 nanolayers, a mixture of tin oxide (SnO) and tin dioxide (SnO2) with the [C]/[Sn] ratio of approximately 1.3 was observed. After dry air exposure, the [O]/[Sn] ratio slightly increased to approximately 1.55. Moreover, an evident increasing of C contamination was observed with [C]/[Sn] ratio of approximately 3.5. After TDS experiment, the [O]/[Sn] ratio goes back to 1.3, whereas C contamination evidently decreases (by factor of 3). Simultaneously, the Ag concentration after air exposure and TDS experiment subsequently decreased (finally by factor of approximately 2), which was caused by the diffusion of Ag atoms into the subsurface layers related to the grain-type surface morphology of Ag-covered L-CVD SnO2 nanolayers, as confirmed by XPS ion depth profiling studies. The variation of surface chemistry of the Ag-covered L-CVD SnO2 after air exposure observed by XPS was in a good correlation with the desorption of residual gases from these nanolayers observed in TDS experiments. PMID:24936162

  7. Effect of Solder-Joint Geometry on the Low-Cycle Fatigue Behavior of Sn-xAg-0.7Cu

    NASA Astrophysics Data System (ADS)

    Lee, Hwa-Teng; Huang, Kuo-Chen

    2016-07-01

    Low-cycle fatigue tests of Sn-Ag-Cu (SAC) Pb-free solder joints under fixed displacement were performed to evaluate the influence of Ag content (0-3 wt.%) and solder-joint geometry (barrel and hourglass types) on solder-joint fatigue behavior and reliability. The solder joints were composed of fine particles of Ag3Sn and Cu6Sn5, which aggregated as an eutectic constituent at grain boundaries of the primary β-Sn phase and formed a dense network structure. A decrease in the Ag content resulted in coarsening of the β-Sn and eutectic phases, which, in turn, decreased the strength of the joint and caused earlier failure. Solder joints in the hourglass form exhibited better fatigue performance with longer life than barrel-type joints. The sharp contact angle formed between the solder and the Cu substrate by the barrel-type joints concentrated stress, which compromised fatigue reliability. The addition of Ag to the solder, however, enhanced fatigue performance because of strengthening caused by Ag3Sn formation. The cracks of the barrel-type SAC solder joints originated mostly at the contact corner and propagated along the interfacial layer between the interfacial intermetallic compound (IMC) and solder matrix. Hourglass-type solder joints, however, demonstrated both crack initiation and propagation in the solder matrix (solder mode). The addition of 1.5-2.0 wt.% Ag to SAC solder appears to enhance the fatigue performance of solder joints while maintaining sufficient strength.

  8. Improvement of reliability and power consumption for SnSb{sub 4} phase change film composited with Ga{sub 3}Sb{sub 7} by superlattice-like method

    SciTech Connect

    Hu, Yifeng; Zhai, Jiwei; Zeng, Huarong; Song, Sannian; Song, Zhitang

    2015-05-07

    Superlattice-like (SLL) SnSb{sub 4}/Ga{sub 3}Sb{sub 7} (SS/GS) thin films were investigated through in-situ film resistance measurement. The optical band gap was derived from the transmittance spectra by using a UV-visible-NIR (ultraviolet-visible-near infrared) spectrophotometer. Transmission electron microscopy was used to observe the micro-structure before and after annealing. Phase change memory cells based on the SLL [SS(3 nm)/GS(4.5 nm)]{sub 7} thin films were fabricated to test and verify the operation consumption and switching endurance. The scanning thermal microscopy was used to probe the nanoscale thermal property.

  9. High Light Absorption and Charge Separation Efficiency at Low Applied Voltage from Sb-Doped SnO2/BiVO4 Core/Shell Nanorod-Array Photoanodes.

    PubMed

    Zhou, Lite; Zhao, Chenqi; Giri, Binod; Allen, Patrick; Xu, Xiaowei; Joshi, Hrushikesh; Fan, Yangyang; Titova, Lyubov V; Rao, Pratap M

    2016-06-01

    BiVO4 has become the top-performing semiconductor among photoanodes for photoelectrochemical water oxidation. However, BiVO4 photoanodes are still limited to a fraction of the theoretically possible photocurrent at low applied voltages because of modest charge transport properties and a trade-off between light absorption and charge separation efficiencies. Here, we investigate photoanodes composed of thin layers of BiVO4 coated onto Sb-doped SnO2 (Sb:SnO2) nanorod-arrays (Sb:SnO2/BiVO4 NRAs) and demonstrate a high value for the product of light absorption and charge separation efficiencies (ηabs × ηsep) of ∼51% at an applied voltage of 0.6 V versus the reversible hydrogen electrode, as determined by integration of the quantum efficiency over the standard AM 1.5G spectrum. To the best of our knowledge, this is one of the highest ηabs × ηsep efficiencies achieved to date at this voltage for nanowire-core/BiVO4-shell photoanodes. Moreover, although WO3 has recently been extensively studied as a core nanowire material for core/shell BiVO4 photoanodes, the Sb:SnO2/BiVO4 NRAs generate larger photocurrents, especially at low applied voltages. In addition, we present control experiments on planar Sb:SnO2/BiVO4 and WO3/BiVO4 heterojunctions, which indicate that Sb:SnO2 is more favorable as a core material. These results indicate that integration of Sb:SnO2 nanorod cores with other successful strategies such as doping and coating with oxygen evolution catalysts can move the performance of BiVO4 and related semiconductors closer to their theoretical potential.

  10. From Ag{sub 2}Sb{sub 2}O{sub 6} to Cd{sub 2}Sb{sub 2}O{sub 7}: Investigations on an anion-deficient to ideal pyrochlore solid solution

    SciTech Connect

    Laurita, Geneva; Vielma, Jason; Winter, Florian; Berthelot, Romain; Largeteau, Alain; Pöttgen, Rainer; Schneider, G.; Subramanian, M.A.

    2014-02-15

    A complete solid solution between the anion-deficient pyrochlore Ag{sub 2}Sb{sub 2}O{sub 6} and the ideal pyrochlore Cd{sub 2}Sb{sub 2}O{sub 7} has been synthesized through the standard solid state ceramic method. Each composition has been characterized by various different techniques, including powder X-ray diffraction, optical spectroscopy, electron paramagnetic resonance and {sup 121}Sb Mössbauer spectroscopy. Computational methods based on density functional theory complement this investigation. Photocatalytic activity has been studied, and transport properties have been measured on pellets densified by spark plasma sintering. The analysis of the data collected from these various techniques enables a comprehensive characterization of the complete solid solution and revealed an anomalous behavior in the Cd-rich end of the solid solution, which has been proposed to arise from a possible radical O{sup −} species in small concentrations. - Graphical abstract: A complete solid solution between the anion-deficient pyrochlore Ag{sub 2}Sb{sub 2}O{sub 6} and the ideal pyrochlore Cd{sub 2}Sb{sub 2}O{sub 7} has been synthesized and investigated through various techniques including X-ray diffraction, electron paramagnetic spectroscopy, and {sup 121}Sb-Mössbauer spectroscopy. Optical and electrical measurements have been performed, and computational methods have been applied to determine the density of states. Photocatalytic activity was monitored by the degradation of Methylene Blue, and upon cadmium substitution, the degradation amount decreased, which is attributed primarily to the changing optical and electrical properties of the solid solution. Display Omitted - Highlights: • A complete solid solution between Ag{sub 2}Sb{sub 2}O{sub 6} and Cd{sub 2}Sb{sub 2}O{sub 7} has been synthesized. • XRD reveals a relatively constant lattice parameter as the series progresses. • Optical and electrical properties have been measured for the solid solution.

  11. Effect of Yttrium on the Fracture Strength of the Sn-1.0Ag-0.5Cu Solder Joints

    NASA Astrophysics Data System (ADS)

    Choi, Hyelim; Kaplan, Wayne D.; Choe, Heeman

    2016-07-01

    This is a preliminary investigation on the mechanical properties of Pb-free Sn-1.0Ag-0.5Cu solder joints containing 0.02 wt.% to 0.1 wt.% Y under a range of thermal aging and reflow conditions. Despite the significantly thicker intermetallic compound (IMC) formed at the solder joint, the 0.1 wt.% Y-doped joint exhibited a higher fracture strength than its baseline Sn-1.0Ag-0.5Cu counterpart under most aging and reflow conditions. This may be associated with the formation of Y-Cu IMCs formed at the interface between the solder and the Cu substrate, because the Y-Cu IMCs have recently been referred to as relatively `ductile' IMCs.

  12. Formation of medical radioisotopes {sup 111}In, {sup 117m}Sn, {sup 124}Sb, and {sup 177}Lu in photonuclear reactions

    SciTech Connect

    Danagulyan, A. S.; Hovhannisyan, G. H. Bakhshiyan, T. M.; Avagyan, R. H.; Avetisyan, A. E.; Kerobyan, I. A.; Dallakyan, R. K.

    2015-06-15

    The possibility of the photonuclear production of radioisotopes {sup 111}In, {sup 117m}Sn, {sup 124}Sb, and {sup 177}Lu is discussed. Reaction yields were measured by the gamma-activation method. The enriched tin isotopes {sup 112,} {sup 118}Sn and Te and HfO{sub 2} of natural isotopic composition were used as targets. The targets were irradiated at the linear electron accelerator of Alikhanian National Science Laboratory (Yerevan) at the energy of 40 MeV. The experimental results obtained in this way reveal that the yield and purity of radioisotopes {sup 111}In and {sup 117}mSn are acceptable for their production via photonuclear reactions. Reactions proceeding on targets from Te and HfO{sub 2} of natural isotopic composition and leading to the formation of {sup 124}Sb and {sup 177}Lu have small yields and are hardly appropriate for the photoproduction of these radioisotopes even in the case of enriched targets.

  13. Relationship between morphologies and orientations of Cu{sub 6}Sn{sub 5} grains in Sn3.0Ag0.5Cu solder joints on different Cu pads

    SciTech Connect

    Tian, Yanhong Zhang, Rui; Hang, Chunjin; Niu, Lina; Wang, Chunqing

    2014-02-15

    The morphologies and orientations of Cu{sub 6}Sn{sub 5} intermetallic compounds in the Sn3.0Ag0.5Cu solder joints both on polycrystalline and single crystal Cu pads under different peak reflow temperatures and times above liquids were investigated. The relationship between Cu{sub 6}Sn{sub 5} grain orientations and morphologies was clarified. At the interface of Sn3.0Ag0.5Cu/polycrystalline Cu pad, scalloped Cu{sub 6}Sn{sub 5} intermetallic compounds formed at 250 °C and roof shape Cu{sub 6}Sn{sub 5} formed at 300 °C. Both scalloped Cu{sub 6}Sn{sub 5} and roof shape Cu{sub 6}Sn{sub 5} had a preferred orientation of (0001) plane being parallel to polycrystalline Cu pad surface. Besides, the percentage of large angle grain boundaries increased as the peak reflow temperature rose. At the interface of Sn3.0Ag0.5Cu/(111) single crystal Cu pad, the Cu{sub 6}Sn{sub 5} intermetallic compounds were mainly scallop-type at 250 °C and were prism type at 300 °C. The prismatic Cu{sub 6}Sn{sub 5} grains grew along the three preferred directions with the inter-angles of 60° on (111) single crystal Cu pad while along two perpendicular directions on (100) single crystal Cu pad. The orientation relationship between Cu{sub 6}Sn{sub 5} grains and the single crystal Cu pads was investigated by electron backscatter diffraction technology. In addition, two types of hollowed Cu{sub 6}Sn{sub 5} intermetallic compounds were found inside the joints of polycrystalline Cu pads. The long hexagonal Cu{sub 6}Sn{sub 5} strips were observed in the joints reflowing at 250 °C while the hollowed Cu{sub 6}Sn{sub 5} strips with the ‘▪’ shape cross-sections appeared at 300 °C, which was attributed to the different grain growth rates of different Cu{sub 6}Sn{sub 5} crystal faces. - Highlights: • The orientation of interfacial Cu{sub 6}Sn{sub 5} grains was obtained by EBSD technology. • Two types of hollowed Cu{sub 6}Sn{sub 5} strips were found at different temperatures. • The formation

  14. Effect of Graphene Nanoplatelets on Wetting, Microstructure, and Tensile Characteristics of Sn-3.0Ag-0.5Cu (SAC) Alloy

    NASA Astrophysics Data System (ADS)

    Sharma, Ashutosh; Sohn, Heung-Rak; Jung, Jae Pil

    2016-01-01

    The effect of graphene nanoplatelets (GNPs) on the wettability, microstructure, and tensile properties of Sn-3.0Ag-0.5Cu (SAC 305) was studied using melting and casting route. The microstructure of the bulk solder is observed with a scanning electron microscope and transmission electron microscope, and the intermetallic compound (IMC) phases are identified by electron probe micro-analyzer. The solderability of the samples is assessed by spreading and wetting tests on a Cu substrate. The experimental results indicate that an addition of 0.05 wt pct GNPs in Sn-3Ag-0.5Cu solder improves the spreading and wettability significantly compared to monolithic SAC. It is also revealed that the thickness of the Ag3Sn IMCs is reduced as compared to the monolithic SAC alloy. Tensile results show that the composite solder exhibits the 13.9 pct elongation and 17 pct increase in the ultimate tensile strength when 0.05 wt pct GNPs in Sn-3Ag-0.5Cu alloy are added. This may be due to the refinement of the IMCs in composite solders compared to the same in Sn-3Ag-0.5Cu alloy brought about by the uniform dispersion of graphene nanoplatelets. It is suggested in this study that the amount of GNPs in Sn-3Ag-0.5Cu alloy should not exceed 0.05 wt pct as it may degrade the desired properties due to the agglomeration of GNPs.

  15. Effective Thermal and Electrical Conductivities of AgSnO2 During Sintering. Part I: Experimental Characterization and Mechanisms

    NASA Astrophysics Data System (ADS)

    Brisson, Elodie; Carre, Patrick; Desplats, Henri; Rogeon, Philippe; Keryvin, Vincent; Bonhomme, Alexandre

    2016-09-01

    The effective thermal and electrical conductivities of porous materials have a major influence on the temperature field inside the sample during resistance sintering (RS). Thermal and electrical effective conductivities of AgSnO2 can be calculated during sintering by using numerical modeling with constitutive equations, which consider microstructural transformations. In Part I of this investigation, the emphasis is on the development of an understanding of the microstructure-conductivity relationship starting from the "green" state to the fully sintered state during RS of AgSnO2. This work focuses on the characterization of the electrical and thermal effective conductivities of the porous composite material (AgSnO2), and on highlighting the mechanisms, which drive the evolutions of the effective conductivities and the microstructure. Measurements were achieved under different loadings (cold compaction, free sintering, Hot Pressing (HP), and RS). Results show that conductivities evolutions are mainly driven by the contact conditions between particles. Bonding diffusion between particles and grain deformation was identified as the main mechanism, which can enhance the contact area between particles. This work will provide all the essential information to define the constitutive equations, presented in details in Part II, to describe the evolutions of the effective conductivities during sintering processes, such as RS or HP.

  16. Creep deformation behavior of Sn-3.5Ag solder/Cu couple at small length scales

    SciTech Connect

    Kerr, M.; Chawla, N

    2004-09-06

    In order to adequately characterize the behavior of solder balls in electronic devices, the mechanical behavior of solder joints needs to be studied at small length scales. The creep behavior of single solder ball Sn-Ag/Cu solder joints was studied in shear, at 25, 60, 95, and 130 deg. C, using a microforce testing system. A change in the creep stress exponent with increasing stress was observed and explained in terms of a threshold stress for bypass of Ag{sub 3}Sn particles by dislocations. The stress exponent was also temperature dependent, exhibiting an increase in exponent of two from lower to higher temperature. The activation energy for creep was found to be temperature dependant, correlating with self-diffusion of pure Sn at high temperatures, and dislocation core diffusion of pure Sn at lower temperatures. Normalizing the creep rate for activation energy and the temperature-dependence of shear modulus allowed for unification of the creep data. Microstructure characterization, including preliminary TEM analysis, and fractographic analysis were conducted in order to fully describe the creep behavior of the material.

  17. The Role of Annealing Process in Ag-Based BaSnO3 Multilayer Thin Films

    NASA Astrophysics Data System (ADS)

    Wu, Muying; Yu, Shihui; He, Lin; Yang, Lei; Zhang, Weifeng

    2016-08-01

    The BaSnO3/Ag/BaSnO3 multilayer structure was designed and fabricated on a quartz glass by magnetron sputtering, followed by an annealing process at a temperature from 150 to 750 °C in air. In this paper, we investigated the influence of the annealing temperature on the structural, optical, and electrical properties of the multilayers and proposed the mechanisms of conduction and transmittance. The maximum value of the figure of merit of 31.8 × 10-3 Ω-1 was achieved for the BaSnO3/Ag/BaSnO3 multilayer thin films annealed at 150 °C, while the average optical transmittance in the visible ranges was >84 %, the resistivity was 5.71 × 10-5 Ω cm, and the sheet resistance was 5.57 Ω/sq. When annealed at below 600 °C, the values of resistivity and transmittance of the multilayers were within an acceptable range (resistivity <5.0 × 10-4 Ω cm, transmittance >80 %). The observed property of the multilayer film is suitable for the application of transparent conductive electrodes.

  18. The Role of Annealing Process in Ag-Based BaSnO3 Multilayer Thin Films.

    PubMed

    Wu, Muying; Yu, Shihui; He, Lin; Yang, Lei; Zhang, Weifeng

    2016-12-01

    The BaSnO3/Ag/BaSnO3 multilayer structure was designed and fabricated on a quartz glass by magnetron sputtering, followed by an annealing process at a temperature from 150 to 750 °C in air. In this paper, we investigated the influence of the annealing temperature on the structural, optical, and electrical properties of the multilayers and proposed the mechanisms of conduction and transmittance. The maximum value of the figure of merit of 31.8 × 10(-3) Ω(-1) was achieved for the BaSnO3/Ag/BaSnO3 multilayer thin films annealed at 150 °C, while the average optical transmittance in the visible ranges was >84 %, the resistivity was 5.71 × 10(-5) Ω cm, and the sheet resistance was 5.57 Ω/sq. When annealed at below 600 °C, the values of resistivity and transmittance of the multilayers were within an acceptable range (resistivity <5.0 × 10(-4) Ω cm, transmittance >80 %). The observed property of the multilayer film is suitable for the application of transparent conductive electrodes. PMID:27544775

  19. An Evaluation of Prototype Circuit Boards Assembled with a Sn-Ag Bi Solder

    SciTech Connect

    ARTAKI,I.; RAY,U.; REJENT,JEROME A.; VIANCO,PAUL T.

    1999-09-01

    An evaluation was performed which examined the aging of surface mount solder joints assembled with 91.84Sn-3.33Ag-4.83Bi solder. Defect analysis of the as-fabricated test vehicles revealed excellent solderability, good package alignment, and a minimum number of voids. Continuous DC electrical monitoring of the solder joints did not reveal opens during as many as 10,000 thermal cycles (0 C, 100 C). The solder joints exhibited no significant degradation through 2500 cycles, based upon an absence of microstructural damage and sustained shear and pull strengths of chip capacitors and J-leaded solder joints, respectively. Thermal cycles of 5000 and 10,000 resulted in some surface cracking of the solder fillets and coatings. In a few cases, deeper cracks were observed in the thinner reaches of several solder fillets. There was no deformation or cracking in the solder located in the gap between the package I/O and the circuit board pad nor in the interior of the fillets, both locations that would raise concerns of joint mechanical integrity. A drop in the chip capacitor shear strength was attributed to crack growth near the top of the fillet.

  20. A first-principles study of the electronic and structural properties of Sb and F doped SnO{sub 2} nanocrystals

    SciTech Connect

    Kim, Minjung; Scott Bobbitt, N.; Marom, Noa; Chelikowsky, James R.

    2015-01-28

    We examine the electronic properties of Sb and F doped SnO{sub 2} nanocrystals up to 2.4 nm in diameter. A real-space pseudopotential implementation of density functional theory is employed within the local density approximation. We calculate electron binding energies and dopant formation energies as function of nanocrystal size, dopant concentration, and dopant species. Structural changes for different dopant species are also investigated. Our study should provide useful information for the design of transparent conducting oxides at the nanoscale.

  1. Surface plasmon resonance enhancement of the magneto-optical Kerr effect in Cu/Co/Ag/SnO2 structure

    NASA Astrophysics Data System (ADS)

    Ghanaatshoar, Majid; Moradi, Mehrdad; Tohidi, Parsis

    2014-10-01

    In this paper, an Ag ultra thin layer was deposited on the Cu/Co film by thermal evaporation technique in the vacuum. The atomic force microscopy confirms that nanoparticles of Ag were formed on the Co magnetic layer, and subsequently, the longitudinal Kerr signal of Cu/Co/Ag was amplified more than 2 times. This enhancement is resulting from the overlap of the surface plasmon resonance in the silver with the electronic transition in the Co layer. Furthermore, we investigated the effect of transparent semiconductor SnO2 as a cap layer on the magnitude of longitudinal Kerr signal. To obtain the optimal thickness of cap layer, a numerical analysis was carried out using a 4 × 4 characteristic matrix, which takes into account multiple reflections from interfaces within the medium and light transmission through the layers.

  2. Nucleation and Growth of Cu-Al Intermetallics in Al-Modified Sn-Cu and Sn-Ag-Cu Lead-Free Solder Alloys

    NASA Astrophysics Data System (ADS)

    Reeve, Kathlene N.; Anderson, Iver E.; Handwerker, Carol A.

    2015-03-01

    Lead-free solder alloys Sn-Cu (SC) and Sn-Ag-Cu (SAC) are widely used by the microelectronics industry, but enhanced control of the microstructure is needed to improve solder performance. For such control, nucleation and stability of Cu-Al intermetallic compound (IMC) solidification catalysts were investigated by variation of the Cu (0.7-3.0 wt.%) and Al (0.0-0.4 wt.%) content of SC + Al and SAC + Al alloys, and of SAC + Al ball-grid array (BGA) solder joints. All of the Al-modified alloys produced Cu-Al IMC particles with different morphologies and phases (occasionally non-equilibrium phases). A trend of increasing Cu-Al IMC volume fraction with increasing Al content was established. Because of solidification of non-equilibrium phases in wire alloy structures, differential scanning calorimetry (DSC) experiments revealed delayed, non-equilibrium melting at high temperatures related to quenched-in Cu-Al phases; a final liquidus of 960-1200°C was recorded. During cooling from 1200°C, the DSC samples had the solidification behavior expected from thermodynamic equilibrium calculations. Solidification of the ternary alloys commenced with formation of ternary β and Cu-Al δ phases at 450-550°C; this was followed by β-Sn, and, finally, Cu6Sn5 and Cu-Al γ1. Because of the presence of the retained, high-temperature phases in the alloys, particle size and volume fraction of the room temperature Cu-Al IMC phases were observed to increase when the alloy casting temperature was reduced from 1200°C to 800°C, even though both temperatures are above the calculated liquidus temperature of the alloys. Preliminary electron backscatter diffraction results seemed to show Sn grain refinement in the SAC + Al BGA alloy.

  3. Thermoelectric performance of nanostructured p-type Zr₀.₅Hf₀.₅Co₀.₄Rh₀.₆Sb1–xSnxhalf-Heusler alloys

    SciTech Connect

    Maji, Pramathesh; Makongo, Julien P.A.; Zhou, Xiaoyuan; Chi, Hang; Uher, Ctirad; Poudeu, Pierre F.P.

    2013-06-01

    Several compositions of the p-type half-Heusler alloys Zr₀.₅Hf₀.₅Co₀.₄Rh₀.₆Sb1–xSnx (0≤x≤0.4) were synthesized by mechanically alloying high purity elemental powders using hardened steel jars and balls on a high energy shaker mill. Powder X-ray diffraction (XRD) investigations of several aliquots taken after regularly spaced milling time suggested that single phase products with half-Heusler (HH) structure can be obtained after 10 h. However, XRD and transmission electron microscopy (TEM) studies of several specimens obtained from compacted polycrystalline powders of Z₀.₅Hf₀.₅Co₀.₄Rh₀.₆Sb1–xSnx alloys using a uniaxial hot press (HP) revealed the presence of CoSb inclusions with various sizes embedded inside the HH matrix. Hall effect, electrical conductivity, and thermopower data collected between 300 K and 775 K on several compositions suggested that electronic transport in the synthesized Zr₀.₅Hf₀.₅Co₀.₄Rh₀.₆Sb1–xSnx/CoSb composites strongly depends on the average size and/or mole fraction of the embedded CoSb inclusions rather than the fraction (x) of Sn substituting for Sb. Among the samples investigated, the nanocomposite with x=0.2, which contains nanometer-scale CoSb inclusions, showed the largest power factor (800 μW/K² m at 775 K) and the lowest lattice thermal conductivity (~2.2 W/m K at 775 K) leading to a six-fold enhancement in the figure of merit when compared to the Zr₀.₅Hf₀.₅Co₀.₄Rh₀.₆Sb₀.₉₉Sn₀.₀₁ bulk matrix. - Graphical abstract: CoSb nanoinclusions embedded into a p-type Zr₀.₅Hf₀.₅Co₀.₄Rh₀.₆Sb1–xSnx half-Heusler matrix simultaneously boost the thermopower and carrier mobility leading to a drastic enhancement of the power factor of the resulting bulk nanostructured materials. Highlights: • The phase composition of half-Heusler (HH) alloy is very sensitive

  4. Quaternary Heusler compounds Co(2-x)Rh(x)MnZ (Z = Ga, Sn, Sb): crystal structure, electronic structure, and magnetic properties.

    PubMed

    Alijani, Vajiheh; Winterlik, Juergen; Fecher, Gerhard H; Naghavi, S Shahab; Chadov, Stanislav; Gruhn, Thomas; Felser, Claudia

    2012-02-01

    Within the huge family of Heusler compounds only a few quaternary derivatives are known that crystallize in the F43m space group. In this work, the yet unreported compounds CoRhMnZ (Z = Ga, Sn, Sb) and the alloy Co(0.5)Rh(1.5)MnSb were investigated in detail by experimental techniques and theoretical methods. The ab initio calculations predict the CoRhMnZ compounds to be half-metallic ferromagnets or to be close to the half-metallic ferromagnetic state. Calculations of the elastic constants show that the cubic structure is stable in compounds containing Mn. Both calculations and experiment reveal that Mn cannot be exchanged by Fe (CoRhFeGa). The low temperature magnetization of the compounds is in the range of 3.4-5.5 μ(B) depending on the composition. The best agreement between experiment and calculation has been achieved for CoRhMnSn (5 μ(B)). The other compounds are also cubic but tend to anti-site disorder. Compared to Co(2)MnSn it is interesting to note that the magnetic properties and half-metallicity are preserved when replacing one of the 'magnetic' Co atoms by a 'non-magnetic' Rh atom. This allows us to increase the spin-orbit interaction at one of the lattice sites while keeping the properties as a precondition for applications and physical effects relying on a large spin-orbit interaction. The Curie temperatures were determined from measurements in induction fields of up to 1 T by applying molecular field fits respecting the applied field. The highest Curie temperature was found for CoRhMnSn (620 K) that makes it, together with the other well defined properties, attractive for above room temperature spintronic applications.

  5. Measurements of L-shell X-ray production cross-sections of Ag and Sb by low-energy electron impact

    NASA Astrophysics Data System (ADS)

    Zhao, J. L.; An, Z.; Zhu, J. J.; Tan, W. J.; Liu, M. T.

    2016-05-01

    The total L-shell X-ray production cross-sections of Ag and Sb elements were measured by detecting the characteristic X-rays induced by the electron impact in the energy range of 6-28 keV. In this experiment, the thin films with thick aluminum substrates were used as the targets, and the experimental setup was improved. The influence of multiple scattering of electrons penetrating the targets films, electrons reflected from the thick aluminum substrates and bremsstrahlung photons produced when incident electrons impacted the targets were corrected by using the Monte Carlo method. The experimental results determined in this paper were compared with some theoretical models and other available experimental data in the literature. It was shown that the L-shell X-ray production cross-sections of Ag and Sb elements measured in this paper were in good agreement with the theoretical predictions within the uncertainties.

  6. Ab initio study of the structural, electronic and elastic properties of AgSbTe2, AgSbSe2, Pr3AlC, Ce3AlC, Ce3AlN, La3AlC and La3AlN compounds

    NASA Astrophysics Data System (ADS)

    Berri, S.; Maouche, D.; Medkour, Y.

    2012-09-01

    In this paper, we study the structural, electronic and elastic properties of the ternary AgSbTe2, AgSbSe2, Pr3AlC, Ce3AlC, Ce3AlN, La3AlC and La3AlN compounds using the full-potential linearized augmented plane wave (FP-LAPW) scheme and the pseudopotential plane wave (PP-PW) scheme in the frame of generalized gradient approximation (GGA). Results are given for the lattice parameters, bulk modulus, and its pressure derivative. The calculated lattice parameters are in good agreement with experimental results. We have determined the full set of first-order elastic constants, shear modulus, Young's modulus and Poisson's ratio of these compounds. Also, we have presented the results of the band structure, densities of states, it is found that this compounds metallic behavior, and a negative gap Г→R for Pr3AlC. The analysis charge densities show that bonding is of covalent-ionic and ionic nature for AgSbSe2 and AgSbTe2 compounds.

  7. Development of Sn-Ag-Cu-X Solders for Electronic Assembly by Micro-Alloying with Al

    SciTech Connect

    Boesenberg, Adam; Anderson, Iver; Harringa, Joel

    2012-03-10

    Of Pb-free solder choices, an array of solder alloys based on the Sn-Ag-Cu (SAC) ternary eutectic (T eut = 217°C) composition have emerged with potential for broad use, including ball grid array (BGA) joints that cool slowly. This work investigated minor substitutional additions of Al (<0.25 wt.%) to Sn-3.5Ag-0.95Cu (SAC3595) solders to promote more consistent solder joint microstructures and to avoid deleterious product phases, e.g., Ag3Sn “blades,” for BGA cooling rates, since such Al additions to SAC had already demonstrated excellent thermal aging stability. Consistent with past work, blade formation was suppressed for increased Al content (>0.05Al), but the suppression effect faded for >0.20Al. Undercooling suppression did not correlate specifically with blade suppression since it became significant at 0.10Al and increased continuously with greater Al to 0.25Al. Surprisingly, an intermediate range of Al content (0.10 wt.% to 0.20 wt.% Al) promoted formation of significant populations of 2-μm to 5-μm faceted Cu-Al particles, identified as Cu33Al17, that clustered at the top of the solder joint matrix and exhibited extraordinary hardness. Clustering of Cu33Al17 was attributed to its buoyancy, from a lower density than Sn liquid, and its early position in the nucleation sequence within the solder matrix, permitting unrestricted migration to the top interface. Joint microstructures and implications for the full nucleation sequence for these SAC + Al solder joints are discussed, along with possible benefits from the clustered particles for improved thermal cycling resistance.

  8. Effect of the Silver Content of SnAgCu Solder on the Interfacial Reaction and on the Reliability of Angle Joints Fabricated by Laser-Jet Soldering

    NASA Astrophysics Data System (ADS)

    Ji, Hongjun; Ma, Yuyou; Li, Mingyu; Wang, Chunqing

    2015-02-01

    The silver content of lead-free solders affects their microstructure, the interfacial reaction, and the performance of the joints in reliability tests. In this study, Sn3.0Ag0.5Cu (wt.%, SAC305) and Sn1.0Ag0.5Cu (wt.%, SAC105) solder balls of diameter 55 μm were reflowed on gold surface pads by laser-jet soldering. It was found that four types of layered intermetallic compound (IMC) were formed at the interfaces; these were Au5Sn/AuSn, AuSn, AuSn2, and AuSn4 from the pad side to the solder matrix. The Au5Sn/AuSn eutectic region, thickness 400 nm, formed because of the high cooling rate induced by the laser-jet soldering. During high-temperature storage tests, the silver became segregated at the interfaces between the Au-Sn IMC and the solder matrix, resulting in inhibition of IMC growth in SAC305 joints, the shear strengths of which were higher than those of SAC105 joints. In mechanical drop tests, however, percentage failure of the SAC305 joints was twice that of the SAC105 joints.

  9. Evolution of the Intermetallic Compounds in Ni/Sn-2.5Ag/Ni Microbumps for Three-Dimensional Integrated Circuits

    NASA Astrophysics Data System (ADS)

    Hsu, H. H.; Huang, Y. T.; Huang, S. Y.; Chang, T. C.; Wu, Albert T.

    2015-10-01

    Ni/Sn-2.5Ag/Ni samples were used to simulate the microbumps in three-dimensional (3D) packaging. The annealed test was adopted to observe the microstructure of intermetallic compound formation at 100°C, 125°C, and 150°C up to 1000 h. In the Ni/Sn-2.5Ag/Ni, predominant phases of layer-type Ni3Sn4 and Ag3Sn particles could be seen under the thermal treatment. The formation of Ni3Sn4 followed a parabolic rate law at each aging temperature. Due to the limited solder volume, the remaining solder of the microbump was completely exhausted after long-time annealing at 150°C. The activation energy for Ni3Sn4 formation in the Ni/Sn-2.5Ag/Ni microbump was 171.8 kJ/mol. Furthermore, the consumption of the Ni under bump metallization (UBM) was estimated based on the mass balance of Ni atoms during the interfacial reaction.

  10. Effects of Ge substitution in GeTe by Ag or Sb on the Seebeck coefficient and carrier concentration derived from 125Te NMR

    NASA Astrophysics Data System (ADS)

    Levin, E. M.

    2016-01-01

    GeTe, a self-doping p -type semiconductor where the high free hole concentration is determined by Ge vacancies is a well-known base for high-efficiency A gxS bxG e50 -2 xT e50 (a tellurium-antimony-germanium-silver series) thermoelectric materials. Here it is shown that the replacement of Ge by Ag in GeTe (a A gxG e50 -xT e50 system) significantly decreases the Seebeck coefficient, whereas the replacement by Sb (S bxG e50 -xT e50 ) increases it. These effects can be attributed to a change in carrier concentration and consistent with 125Te NMR spin-lattice relaxation measurements and NMR signal position, which is mostly dependent on the Knight shift. Opposite changes in carrier concentration in A gxG e50 -xT e50 and S bxG e50 -xT e50 can be explained by different valence electron configurations of Ag and Sb compared to that of Ge, which results in a different local electron imbalance and/or in a change in Ge vacancy formation energy and affects the total carrier concentration. Comparison of our data for GeTe, A g2G e48T e50 , and S b2G e48T e50 with those for A g2S b2G e46T e50 shows that the effects from Ag and Sb compensate for each other and supports the formation of [Ag +Sb ] atomic pairs suggested earlier based on theoretical calculations.

  11. The effect of intermetallic compound evolution on the fracture behavior of Au stud bumps joined with Sn-3.5Ag solder

    NASA Astrophysics Data System (ADS)

    Lee, Young-Kyu; Ko, Yong-Ho; Kim, Jun-Ki; Lee, Chang-Woo; Yoo, Sehoon

    2013-01-01

    The microstructure and joint properties of Au stud bumps joined with Sn-3.5Ag solder were investigated as functions of flip chip bonding temperature and aging time. Au stud bumps were bonded on solder-onpad (SOP) at bonding temperature of 260°C and 300°C for 10 s, respectively. Aging treatment was carried out at 150°C for 100 h, 300 h, and 500 h, respectively. After flip chip bonding, intermetallic compounds (IMCs) of AuSn, AuSn2, and AuSn4 were formed at the interface between the Au stud bump and Sn-3.5Ag solder. At a bonding temperature of 300°C, AuSn2 IMC clusters, which were surrounded by AuSn4 IMCs, were observed in the Sn-3.5Ag solder bump. After flip chip bonding, bonding strength was approximately 220.5mN/bump. As aging time increased, the bonding strength decreased. After 100 h of aging treatment, the bonding strength of the joint bonded at 300°C was lower than that bonded at 260°C due to the fast growth rate of the AuSn2 IMCs. The main failure modes were interface fractures between the AuSn2 IMCs and AuSn4 IMCs, fractures through the AuSn2 IMCs and pad lift. Initial joint microstructures after flip chip bonding strongly affected the bonding strengths of aged samples.

  12. Effects of PCB Pad Metal Finishes on the Cu-Pillar/Sn-Ag Micro Bump Joint Reliability of Chip-on-Board (COB) Assembly

    NASA Astrophysics Data System (ADS)

    Kim, Youngsoon; Lee, Seyong; Shin, Ji-won; Paik, Kyung-Wook

    2016-06-01

    While solder bumps have been used as the bump structure to form the interconnection during the last few decades, the continuing scaling down of devices has led to a change in the bump structure to Cu-pillar/Sn-Ag micro-bumps. Cu-pillar/Sn-Ag micro-bump interconnections differ from conventional solder bump interconnections in terms of their assembly processing and reliability. A thermo-compression bonding method with pre-applied b-stage non-conductive films has been adopted to form solder joints between Cu pillar/Sn-Ag micro bumps and printed circuit board vehicles, using various pad metal finishes. As a result, various interfacial inter-metallic compounds (IMCs) reactions and stress concentrations occur at the Cu pillar/Sn-Ag micro bumps joints. Therefore, it is necessary to investigate the influence of pad metal finishes on the structural reliability of fine pitch Cu pillar/Sn-Ag micro bumps flip chip packaging. In this study, four different pad surface finishes (Thin Ni ENEPIG, OSP, ENEPIG, ENIG) were evaluated in terms of their interconnection reliability by thermal cycle (T/C) test up to 2000 cycles at temperatures ranging from -55°C to 125°C and high-temperature storage test up to 1000 h at 150°C. The contact resistances of the Cu pillar/Sn-Ag micro bump showed significant differences after the T/C reliability test in the following order: thin Ni ENEPIG > OSP > ENEPIG where the thin Ni ENEPIG pad metal finish provided the best Cu pillar/Sn-Ag micro bump interconnection in terms of bump joint reliability. Various IMCs formed between the bump joint areas can account for the main failure mechanism.

  13. Electronic structure and thermoelectric properties of p-type Ag-doped Mg₂Sn and Mg₂Sn{sub 1-x}Si{sub x} (x=0.05, 0.1)

    SciTech Connect

    Kim, Sunphil; Jin, Hyungyu; Wiendlocha, Bartlomiej; Tobola, Janusz; Heremans, Joseph P.

    2014-10-21

    An experimental and theoretical study of p-type Ag-doped Mg₂Sn and Mg₂Sn{sub 1-x}Si{sub x} (x=0.05, 0.1) is presented. Band structure calculations show that behavior of Ag in Mg₂Sn depends on the site it occupies. Based on Bloch spectral functions and density of states calculations, we show that if Ag substitutes for Sn, it is likely to form a resonant level; if it substitutes for Mg, a rigid-band-like behavior is observed. In both cases, the doped system should exhibit p-type conductivity. Experimentally, thermoelectric, thermomagnetic, and galvanomagnetic properties are investigated of p-type Mg₂Sn{sub 1–x}Si{sub x} (x=0, 0.05, 0.1) samples synthesized by a co-melting method in sealed crucibles. Ag effectively dopes the samples p-type, and thermoelectric power factors in excess of 20μW cm⁻¹K⁻² are observed in optimally doped samples. From the measured Seebeck coefficient, Nernst coefficient, and mobility, we find that the combination of acoustic phonon scattering, optical phonon scattering and defect scattering results in an energy-independent scattering rate. No resonant-like increase in thermopower is observed, which correlates well with electronic structure calculations assuming the location of Ag on Mg site.

  14. Magnetoresistance and exchange bias in high Mn content melt-spun Mn46Ni42Sn11Sb1 alloy ribbon

    NASA Astrophysics Data System (ADS)

    Qingxue, Huang; Fenghua, Chen; Mingang, Zhang; Xiaohong, Xu

    2016-05-01

    Highly textured Heusler alloy Mn46Ni42Sn11Sb1 ribbons were prepared by melt spinning. The annealed high Mn content Mn46Ni42Sn11Sb1 ribbon cross-section microstructure, crystal structure, martensitic transformation (MT), and magnetoresistance (MR) properties were investigated. The MR in the annealed ribbon was assessed by the magnetic field direction perpendicular to the ribbon surface with the magnetic field up to 30 kOe. The large negative value of 25% for MR was obtained at 244 K. The exchange bias (EB) effects of the as-spun and annealed ribbons were investigated. After annealing, the EB effects have been improved by about 25 Oe at the temperature of 50 K. The magnetizations have increased approximately by 10% more than the as-spun ribbon. Project supported by the National Basic Research Program of China (Grant No. 2012CB722801), the Postdoctoral Science Foundation of China (Grant No. 2015M571285), the National Natural Science Foundation of China (Grant No. 51401140), the Postdoctoral Research Station Foundation of Taiyuan University of Science and Technology, China (Grant Nos. 20142014, 20152041, and 20151082), the Natural Science Foundation of Shanxi Province, China (Grants Nos. 2015021019, 2015091011, and 2015081011), and the Key Team of Scientific and Technological Innovation of Shanxi Province, China (Grant No. 2013131009).

  15. Fabrication of a solid state power source for ambient conditions using solid electrolyte system (SbI3)0.3-(Ag2CrO4)0.7

    NASA Astrophysics Data System (ADS)

    Suthanthiraraj, S. Austin; Sarojini, S.

    2012-06-01

    Fast ion conducting system (SbI3)0.3 - (Ag2CrO4)0.7 containing 0.3 mole fraction SbI3 was synthesized by rapid melt-quenching method. The open circuit voltage, (OCV) measured for the solid state primary electrochemical cell fabricated using the above best conducting composition (SbI3)0.3 - (Ag2Cr04)0.7 is found to be 641 mV. Detailed discharge characteristics evaluated under different load conditions for the solid state cell have indicated certain interesting features.

  16. Microstructures and Mechanical Properties of Sn-0.1Ag-0.7Cu-(Co, Ni, and Nd) Lead-Free Solders

    NASA Astrophysics Data System (ADS)

    Chen, Xu; Zhou, Jian; Xue, Feng; Bai, Jing; Yao, Yao

    2015-02-01

    The influences of minor alloying elements Co, Ni, and Nd on the microstructures and mechanical properties of Sn-0.1Ag-0.7Cu (SAC0107) solder were investigated. The results show that the microstructures of SAC0107 alloy mainly consisted of primary Sn-rich phases and eutectic phases composed of Ag3Sn and Cu6Sn5 phases dispersed in a Sn matrix. With Co or Ni additions, the amount of primary Sn-rich phase reduced and IMCs dispersed more uniformly in the Sn matrix. The elements of Co and Ni were concentrated in (Co x Cu1- x )6Sn5 and (Ni x Cu1- x )6Sn5 intermetallic compounds (IMCs), respectively, and they also entered the IMC layer between solder alloys and Cu substrate during soldering. Shear strength of the joints all increased by adding Co, Ni, and Nd elements. Different from the Co and Nd additions, the addition of the Ni element also markedly improved the tensile strength and elongation of SAC0107 alloys.

  17. AgI alloying in SnTe boosts the thermoelectric performance via simultaneous valence band convergence and carrier concentration optimization

    NASA Astrophysics Data System (ADS)

    Banik, Ananya; Biswas, Kanishka

    2016-10-01

    SnTe, a Pb-free analogue of PbTe, was earlier assumed to be a poor thermoelectric material due to excess p-type carrier concentration and large energy separation between light and heavy hole valence bands. Here, we report the enhancement of the thermoelectric performance of p-type SnTe by Ag and I co-doping. AgI (1-6 mol%) alloying in SnTe modulates its electronic structure by increasing the band gap of SnTe, which results in decrease in the energy separation between its light and heavy hole valence bands, thereby giving rise to valence band convergence. Additionally, iodine doping in the Te sublattice of SnTe decreases the excess p-type carrier concentration. Due to significant decrease in hole concentration and reduction of the energy separation between light and heavy hole valence bands, significant enhancement in Seebeck coefficient was achieved at the temperature range of 600-900 K for Sn1-xAgxTe1-xIx samples. A maximum thermoelectric figure of merit, zT, of ~1.05 was achieved at 860 K in high quality crystalline ingot of p-type Sn0.95Ag0.05Te0.95I0.05.

  18. An investigation of the microstructure and mechanical properties of electrochemically coated Ag(4)Sn dental alloy particles condensed in vitro

    NASA Astrophysics Data System (ADS)

    Marquez, Jose Antonio

    As part of the ongoing scientific effort to develop a new amalgam-like material without mercury, a team of metallurgists and electrochemists at the National Institute of Standards and Technology (NIST) in Gaithersburg, Maryland, announced in 1993 the development of a new Ag-Sn dental alloy system without mercury that sought to replace conventional dental amalgams. They used spherical Ag3Sn and Ag4Sn intermetallic dental alloy particles, commonly used in conventional dental alloys, and coated them with electrodeposited silver with newly-developed electrolytic and immersion techniques. The particles had relatively pure silver coatings that were closely adherent to the intermetalfic cores. These silver-coated particles, due to silver's plasticity at room temperature, were condensed into PlexiglasRTM molds with the aid of an acidic surface activating solution (HBF4) and a mechanical condensing device, producing a metal-matrix composite with Ag3,4Sn filler particles surrounded by a cold-welded silver matrix. Since silver strain hardens rather easily, the layers had to be condensed in less than 0.5 mm increments to obtain a dense structure. Mechanical testing at NIST produced compressive strength values equal to or greater than those of conventional dental amalgams. Because of its potential for eliminating mercury as a constituent in dental amalgam, this material created a stir in dental circles when first developed and conceivably could prove to be a major breakthrough in the field of dental restoratives. To date, the chief impediments to its approval for human clinical applications by the Food and Drug Administration are the potentially-toxic surface activating solution used for oxide reduction, and the high condensation pressures needed for cold welding because of the tendency for silver to strain harden. In this related study, the author, who has practiced general dentistry for 25 years, evaluates some of the mechanical and microstructural properties of these

  19. GaInSb and GaInAsSb thermophotovoltaic device fabrication and characterization

    SciTech Connect

    Hitchcock, C.; Gutmann, R.; Borrego, J.; Ehsani, H.; Bhat, I.; Freeman, M.; Charache, G.

    1997-05-01

    Thermophotovoltaic (TPV) devices have been fabricated using epitaxial ternary and quaternary layers grown on GaSb substrates. The GaInSb layers were grown by organometallic vapor phase epitaxy (OMVPE) and the InGaAsSb lattice-matched layers were grown by liquid phase epitaxy (LPE). Device fabrication steps include unannealed p-type ohmic contacts, annealed Sn/Au n-type ohmic contacts, and a thick Ag top-surface contact using a lift-off process. Devices are characterized primarily by dark I-V, photo I-V, and quantum efficiency measurements, which are correlated to microscopic and macroscopic material properties. Particular emphasis has been on material enhancements to increase quantum efficiency and decrease dark saturation current density. TPV device performance is presently limited by the base diffusion length, typically 1 to 2 microns.

  20. DFT study of the adsorption properties of single Pt, Pd, Ag, In and Sn on the γ-Al2O3 (1 1 0) surface

    NASA Astrophysics Data System (ADS)

    Gao, Hongwei

    2016-07-01

    GGA/PW91 exchange-correlation functional within periodic density functional theory (DFT) has been used to investigate the adsorption properties of different metal atoms (Pt, Pd, Ag, Sn and In) on the O-terminated and Al-terminated γ-Al2O3 (1 1 0) surface. The predicted adsorption energies follow the order Sn > In > Ag > Pd > Pt. It is found that O-bridge position is the most favorable site for single Pt, Pd, Ag, Sn and In adsorption on the O-terminated γ-Al2O3 (1 1 0) surface. It is found that the most favorable site on the Al-terminated γ-Al2O3 (1 1 0) surface is O-top position.

  1. Internally consistent database for sulfides and sulfosalts in the system Ag 2S-Cu 2S-ZnS-FeS-Sb 2S 3-As 2S 3: Update

    NASA Astrophysics Data System (ADS)

    Sack, Richard O.

    2005-03-01

    The thermodynamic database for Ag 2S-Cu 2S-ZnS-FeS-Sb 2S 3-As 2S 3 sulfides and sulfosalts applicable to temperatures above 119°C has been updated based on the results of recent petrologic, experimental, and theoretical studies. Solution and end-member properties of fahlore [˜(Ag,Cu) 10(Fe,Zn) 2(Sb,As) 4S 13] have been adjusted to allow for (1) revisions of the description of Fe-Zn partitioning with sphalerite that incorporate sphalerite activity-composition relations derived from the cluster variation method (CVM) model of a previous study, (2) the assumption that the miscibility gaps observed in high-Ag fahlores from the Husky Mine (Yukon, Canada) approximate a temperature of 170°C, and (3) an increase in the Ag-Cu partitioning between fahlore and polybasite (Ag,Cu) 16(Sb,As) 2S 11 required to reproduce compositions of fahlore in the polybasite + Sb-fahlore + ZnS sphalerite assemblage reported in previous experimental studies. The resulting minor parameter adjustments produce a database that demonstrably reproduces the composition data reported for a wide-range of sulfide ore deposits. They result in revised estimates for the Gibbs energies of formation of end-member fahlore components from the simple sulfides that, except for Cu 10Zn 2Sb 4S 13, are less temperature dependent than those previously inferred (at 200 and 400°C: -23.27 and -24.84 kJ/gfw for Ag 10Zn 2Sb 4S 13, -115.18 and -116.57 kJ/gfw for Cu 10Zn 2Sb 4S 13, -85.14 and -75.20 kJ/gfw for Cu 10Fe 2Sb 4S 13, and -3.81 and 9.10 kJ/gfw for Ag 10Fe 2Sb 4S 13). The database is extended to PbS-bearing supersystems containing the galena + fahlore + sphalerite assemblage. Predicted initial Ag-contents of galena calculated from this database agree with those inferred from petrological studies of Ag-Pb-Zn ores from the Coeur d'Alene district, Idaho, USA and Julcani, Peru.

  2. Effect of Pr Addition on Properties of Sn-0.5Ag-0.7Cu-0.5Ga Lead-Free Solder

    NASA Astrophysics Data System (ADS)

    Xujing, Nan; Songbai, Xue; Peizhuo, Zhai; Dongxue, Luo

    2016-10-01

    In this paper, the effect of Pr addition on the microstructure and properties of Sn-0.5Ag-0.7Cu-0.5Ga lead-free solder was investigated. It was found that the properties of Sn-0.5Ag-0.7Cu-0.5Ga- xPr solder, such as wettability and mechanical properties, could be obviously improved, and the optimal content of Pr was about 0.06 wt.%. The microstructure of Sn-0.5Ag-0.7Cu-0.5Ga-0.06Pr solder showed that the β-Sn matrix and intermetallic compound (IMC) grains were significantly refined, and refinement and homogenization of the microstructure achieved maximum efficiency, which played the role of fine grain strengthening and second phase strengthening. However, as the content of Pr exceeded 0.06 wt.%, some uneven distributed black phases of PrSn3 were found in the β-Sn matrix, which seriously worsened the microstructure and properties of the solders. As a surface-active element, the segregation of Pr at the molten solder interface could give rise to decreasing the interface tension. Consequently, adding a suitable amount of Pr could play a positive role in improving the properties of the solders.

  3. Effect of Pr Addition on Properties of Sn-0.5Ag-0.7Cu-0.5Ga Lead-Free Solder

    NASA Astrophysics Data System (ADS)

    Xujing, Nan; Songbai, Xue; Peizhuo, Zhai; Dongxue, Luo

    2016-07-01

    In this paper, the effect of Pr addition on the microstructure and properties of Sn-0.5Ag-0.7Cu-0.5Ga lead-free solder was investigated. It was found that the properties of Sn-0.5Ag-0.7Cu-0.5Ga-xPr solder, such as wettability and mechanical properties, could be obviously improved, and the optimal content of Pr was about 0.06 wt.%. The microstructure of Sn-0.5Ag-0.7Cu-0.5Ga-0.06Pr solder showed that the β-Sn matrix and intermetallic compound (IMC) grains were significantly refined, and refinement and homogenization of the microstructure achieved maximum efficiency, which played the role of fine grain strengthening and second phase strengthening. However, as the content of Pr exceeded 0.06 wt.%, some uneven distributed black phases of PrSn3 were found in the β-Sn matrix, which seriously worsened the microstructure and properties of the solders. As a surface-active element, the segregation of Pr at the molten solder interface could give rise to decreasing the interface tension. Consequently, adding a suitable amount of Pr could play a positive role in improving the properties of the solders.

  4. Effect of palladium on gas sensing properties of Sn(Sb2O3)O2 nanoparticles synthesized by sonochemical processing at room temperature

    NASA Astrophysics Data System (ADS)

    Majumdar, Sanhita

    2016-07-01

    Palladium catalyzed Sn(Sb2O3)O2 nanoparticles prepared by the sonication assisted method exhibited a Pd dependent selectivity to butane as well as methane. Attempts have been made to correlate powder properties such as surface area, particle size, crystallite size and rate of agglomeration with sensor properties like resistance, percent sensitivity, response and recovery times. Sample with 3 wt% Pd exhibited the lowest rate of agglomeration amongst the prepared samples and around 70% sensitivity towards butane at 400 °C operating temperature. 5 wt% Pd loaded sample, on the other hand, exhibited about 98% methane sensitivity at 350 °C operating temperature. Results confirmed that either by varying the amount of palladium or by changing the operating temperature, it was possible to tune the selective sensitivity of the fabricated sensors towards either butane or methane.

  5. New dielectric ceramics Pb(Cd)BiM/sup IV/SbO/sub 7/ (M/sup IV/ = Ti, Zr, Sn) with the pyrochlore structure

    SciTech Connect

    Lambachri, A.; Monier, M.; Mercurio, J.P.; Frit, B.

    1988-04-01

    Dielectric ceramics have been obtained by natural sintering of pyrochlore phases with general formula Pb(Cd)BiM/sup IV/SbO/sub 7/ (M/sup IV/ = Ti, Zr, Sn). Low frequency dielectric characteristics have been studied with respect to the processing conditions: sintering without additive and in the presence of some low melting compounds (PbO, Pb/sub 5/Ge/sub 3/O/sub 11/, Bi/sub 12/PbO/sub 19/ and Bi/sub 12/CdO/sub 19/). The dielectric constants of these ceramics lie between 30 and 60, the dielectric losses range from 10 to 30.10/sup -4/ and the temperature coefficient of the dielectric constants (20 - 100/sup 0/C) can be tailored by means of additives in the +- 30 ppm K/sup -1/ range.

  6. Electrochemical oxidation of electrodialysed reverse osmosis concentrate on Ti/Pt-IrO2, Ti/SnO2-Sb and boron-doped diamond electrodes.

    PubMed

    Bagastyo, Arseto Y; Batstone, Damien J; Rabaey, Korneel; Radjenovic, Jelena

    2013-01-01

    Reverse osmosis concentrate from wastewater reclamation contains biorefractory trace organic contaminants that may pose environmental or health hazard. Due to its high conductivity, electrochemical oxidation of brine requires low voltage which is energetically favourable. However, the presence of chloride ions may lead to the formation of chlorinated by-products, which are likely to exert an increased toxicity and persistence to further oxidation than their non-chlorinated analogues. Here, the performance of Ti/Pt-IrO(2), Ti/SnO(2)-Sb and Si/BDD anodes was evaluated for the electrochemical oxidation of ROC in the presence of chloride, nitrate or sulfate ions (0.05 M sodium salts). In order to investigate the electrooxidation of ROC with nitrate and sulfate ions as dominant ion mediators, chloride ion concentration was decreased 10 times by electrodialytic pretreatment. The highest Coulombic efficiency for chemical oxygen demand (COD) removal was observed in the presence of high chloride ions concentration for all anodes tested (8.3-15.9%). Electrooxidation of the electrodialysed concentrate at Ti/SnO(2)-Sb and Ti/Pt-IrO(2) electrodes exhibited low dissolved organic carbon (DOC) (i.e. 23 and 12%, respectively) and COD removal (i.e. 37-43 and 6-22%, respectively), indicating that for these electrodes chlorine-mediated oxidation was the main oxidation mechanism, particularly in the latter case. In contrast, DOC removal for the electrodialysed concentrate stream was enhanced at Si/BDD anode in the presence of SO(4)(2-) (i.e. 51%) compared to NO(3)(2-) electrolyte (i.e. 41%), likely due to the contribution of SO(4)(·-) and S(2)O(8)(2-) species to the oxidative degradation. Furthermore, decreased concentration of chloride ions lead to a lower formation of haloacetic acids and trihalomethanes at all three electrodes tested. PMID:23137830

  7. Surface chemistry of SnO2 nanowires on Ag-catalyst-covered Si substrate studied using XPS and TDS methods

    PubMed Central

    2014-01-01

    In this paper we investigate the surface chemistry, including surface contaminations, of SnO2 nanowires deposited on Ag-covered Si substrate by vapor phase deposition (VPD), thanks to x-ray photoelectron spectroscopy (XPS) in combination with thermal desorption spectroscopy (TDS). Air-exposed SnO2 nanowires are slightly non-stoichiometric, and a huge amount of C contaminations is observed at their surface. After the thermal physical desorption (TPD) process, SnO2 nanowires become almost stoichiometric without any surface C contaminations. This is probably related to the fact that C contaminations, as well as residual gases from air, are weakly bounded to the crystalline SnO2 nanowires and can be easily removed from their surface. The obtained results gave us insight on the interpretation of the aging effect of SnO2 nanowires that is of great importance for their potential application in the development of novel chemical nanosensor devices. PMID:24461127

  8. Multistage hydrothermal silicification and Fe-Tl-As-Sb-Ge-REE enrichment in the Red Dog Zn-Pb-Ag district, northern Alaska: Geochemistry, origin, and exploration applications

    USGS Publications Warehouse

    Slack, J.F.; Kelley, K.D.; Anderson, V.M.; Clark, J.L.; Ayuso, R.A.

    2004-01-01

    Geochemical analyses of major, trace, and rare earth elements (REE) in more than 200 samples of variably silicified and altered wall rocks, massive and banded sulfide, silica rock, and sulfide-rich and unmineralized barite were obtained from the Main, Aqqaluk, and Anarraaq deposits in the Red Dog Zn-Pb-Ag district of northern Alaska. Detailed lithogeochemical profiles for two drill cores at Aqqaluk display an antithetic relationship between SiO2/Al2O3 and TiO2/Zr which, together with textural information, suggest preferential silicification of carbonate-bearing sediments. Data for both drill cores also show generally high Tl, Sb, As, and Ge and uniformly positive Eu anomalies (Eu/Eu* > 1.0). Similar high Tl, Sb, As, Ge, and Eu/Eu* values are present in the footwall and shallow hanging wall of Zn-Pb-Ag sulfide intervals at Anarraaq but are not as widely dispersed. Net chemical changes for altered wall rocks in the district, on the basis of average Al-normalized data relative to unaltered black shales of the host Kuna Formation, include large enrichments (>50%) of Fe, Ba, Eu, V, S, Co, Zn, Pb, Tl, As, Sb, and Ge at both Red Dog and Anarraaq, Si at Red Dog, and Sr, U, and Se at Anarraaq. Large depletions (>50%) are evident for Ca at both Red Dog and Anarraaq, for Mg, P, and Y at Red Dog, and for Na at Anarraaq. At both Red Dog and Anarraaq, wall-rock alteration removed calcite and minor dolomite during hydrothermal decarbonation reactions and introduced Si, Eu, and Ge during silicification. Sulfidation reactions deposited Fe, S, Co, Zn, Pb, Tl, As, and Sb; barite mineralization introduced Ba, S, and Sr. Light REE and U were mobilized locally. This alteration and mineralization occurred during Mississippi an hydrothermal events that predated the Middle Jurassic-Cretaceous Brookian orogeny. Early hydrothermal silicification at Red Dog took place prior to or during massive sulfide mineralization, on the basis of the dominantly planar nature of Zn-Pb veins, which suggests

  9. Sn-doped Bi1.1Sb0.9Te2S bulk crystal topological insulator with excellent properties

    PubMed Central

    Kushwaha, S. K.; Pletikosić, I.; Liang, T.; Gyenis, A.; Lapidus, S. H.; Tian, Yao; Zhao, He; Burch, K. S.; Lin, Jingjing; Wang, Wudi; Ji, Huiwen; Fedorov, A. V.; Yazdani, Ali; Ong, N. P.; Valla, T.; Cava, R. J.

    2016-01-01

    A long-standing issue in topological insulator research has been to find a bulk single crystal material that provides a high-quality platform for characterizing topological surface states without interference from bulk electronic states. This material would ideally be a bulk insulator, have a surface state Dirac point energy well isolated from the bulk valence and conduction bands, display quantum oscillations from the surface state electrons and be growable as large, high-quality bulk single crystals. Here we show that this material obstacle is overcome by bulk crystals of lightly Sn-doped Bi1.1Sb0.9Te2S grown by the vertical Bridgman method. We characterize Sn-BSTS via angle-resolved photoemission spectroscopy, scanning tunnelling microscopy, transport studies, X-ray diffraction and Raman scattering. We present this material as a high-quality topological insulator that can be reliably grown as bulk single crystals and thus studied by many researchers interested in topological surface states. PMID:27118032

  10. Sn-doped Bi1.1Sb0.9Te2S bulk crystal topological insulator with excellent properties

    DOE PAGES

    S. K. Kushwaha; Pletikosic, I.; Liang, T.; Gyenis, A.; Lapidus, S. H.; Tian, Y.; Zhao, H.; Burch, K. S.; Lin, Jingjing; Wang, Wudi; et al

    2016-04-27

    A long-standing issue in topological insulator research has been to find a bulk single crystal material that provides a high quality platform for characterizing topological surface states without interference from bulk electronic states. This material would ideally be a bulk insulator, have a surface state Dirac point energy well isolated from the bulk valence and conduction bands, display quantum oscillations from the surface state electrons, and be growable as large, high quality bulk single crystals. Here we show that this materials obstacle is overcome by bulk crystals of lightly Sn-doped Bi1.1Sb0.9Te2S grown by the Vertical Bridgeman method. We characterize Sn-BSTSmore » via angle-resolved photoemission spectroscopy, scanning tunneling microscopy, transport studies, X-ray diffraction, and Raman scattering. We present this material as a high quality topological insulator that can be reliably grown as bulk single crystals and thus studied by many researchers interested in topological surface states.« less

  11. Fully epitaxial C1b-type NiMnSb half-Heusler alloy films for current-perpendicular-to-plane giant magnetoresistance devices with a Ag spacer.

    PubMed

    Wen, Zhenchao; Kubota, Takahide; Yamamoto, Tatsuya; Takanashi, Koki

    2015-01-01

    Remarkable magnetic and spin-dependent transport properties arise from well-designed spintronic materials and heterostructures. Half-metallic Heusler alloys with high spin polarization exhibit properties that are particularly advantageous for the development of high-performance spintronic devices. Here, we report fully (001)-epitaxial growth of a high-quality half-metallic NiMnSb half-Heusler alloy films, and their application to current-perpendicular-to-plane giant magnetoresistance (CPP-GMR) devices with Ag spacer layers. Fully (001)-oriented NiMnSb epitaxial films with very flat surface and high magnetization were prepared on Cr/Ag-buffered MgO(001) single crystalline substrates by changing the substrate temperature. Epitaxial CPP-GMR devices using the NiMnSb films and a Ag spacer were fabricated, and room-temperature (RT) CPP-GMR ratios for the C1b-type half-Heusler alloy were determined for the first time. A CPP-GMR ratio of 8% (21%) at RT (4.2 K) was achieved in the fully epitaxial NiMnSb/Ag/NiMnSb structures. Furthermore, negative anisotropic magnetoresistance (AMR) ratio and small discrepancy of the AMR amplitudes between RT and 10 K were observed in a single epitaxial NiMnSb film, indicating robust bulk half metallicity against thermal fluctuation in the half-Heusler compound. The modest CPP-GMR ratios could be attributed to interface effects between NiMnSb and Ag. This work provides a pathway for engineering a new class of ordered alloy materials with particular emphasis on spintronics.

  12. Fully epitaxial C1b-type NiMnSb half-Heusler alloy films for current-perpendicular-to-plane giant magnetoresistance devices with a Ag spacer

    PubMed Central

    Wen, Zhenchao; Kubota, Takahide; Yamamoto, Tatsuya; Takanashi, Koki

    2015-01-01

    Remarkable magnetic and spin-dependent transport properties arise from well-designed spintronic materials and heterostructures. Half-metallic Heusler alloys with high spin polarization exhibit properties that are particularly advantageous for the development of high-performance spintronic devices. Here, we report fully (001)-epitaxial growth of a high-quality half-metallic NiMnSb half-Heusler alloy films, and their application to current-perpendicular-to-plane giant magnetoresistance (CPP-GMR) devices with Ag spacer layers. Fully (001)-oriented NiMnSb epitaxial films with very flat surface and high magnetization were prepared on Cr/Ag-buffered MgO(001) single crystalline substrates by changing the substrate temperature. Epitaxial CPP-GMR devices using the NiMnSb films and a Ag spacer were fabricated, and room-temperature (RT) CPP-GMR ratios for the C1b-type half-Heusler alloy were determined for the first time. A CPP-GMR ratio of 8% (21%) at RT (4.2 K) was achieved in the fully epitaxial NiMnSb/Ag/NiMnSb structures. Furthermore, negative anisotropic magnetoresistance (AMR) ratio and small discrepancy of the AMR amplitudes between RT and 10 K were observed in a single epitaxial NiMnSb film, indicating robust bulk half metallicity against thermal fluctuation in the half-Heusler compound. The modest CPP-GMR ratios could be attributed to interface effects between NiMnSb and Ag. This work provides a pathway for engineering a new class of ordered alloy materials with particular emphasis on spintronics. PMID:26672482

  13. Fully epitaxial C1b-type NiMnSb half-Heusler alloy films for current-perpendicular-to-plane giant magnetoresistance devices with a Ag spacer

    NASA Astrophysics Data System (ADS)

    Wen, Zhenchao; Kubota, Takahide; Yamamoto, Tatsuya; Takanashi, Koki

    2015-12-01

    Remarkable magnetic and spin-dependent transport properties arise from well-designed spintronic materials and heterostructures. Half-metallic Heusler alloys with high spin polarization exhibit properties that are particularly advantageous for the development of high-performance spintronic devices. Here, we report fully (001)-epitaxial growth of a high-quality half-metallic NiMnSb half-Heusler alloy films, and their application to current-perpendicular-to-plane giant magnetoresistance (CPP-GMR) devices with Ag spacer layers. Fully (001)-oriented NiMnSb epitaxial films with very flat surface and high magnetization were prepared on Cr/Ag-buffered MgO(001) single crystalline substrates by changing the substrate temperature. Epitaxial CPP-GMR devices using the NiMnSb films and a Ag spacer were fabricated, and room-temperature (RT) CPP-GMR ratios for the C1b-type half-Heusler alloy were determined for the first time. A CPP-GMR ratio of 8% (21%) at RT (4.2 K) was achieved in the fully epitaxial NiMnSb/Ag/NiMnSb structures. Furthermore, negative anisotropic magnetoresistance (AMR) ratio and small discrepancy of the AMR amplitudes between RT and 10 K were observed in a single epitaxial NiMnSb film, indicating robust bulk half metallicity against thermal fluctuation in the half-Heusler compound. The modest CPP-GMR ratios could be attributed to interface effects between NiMnSb and Ag. This work provides a pathway for engineering a new class of ordered alloy materials with particular emphasis on spintronics.

  14. Enhanced current-perpendicular-to-plane giant magnetoresistance effect in half-metallic NiMnSb based nanojunctions with multiple Ag spacers

    NASA Astrophysics Data System (ADS)

    Wen, Zhenchao; Kubota, Takahide; Yamamoto, Tatsuya; Takanashi, Koki

    2016-06-01

    Current-perpendicular-to-plane giant magnetoresistance (CPP-GMR) heterostructure devices using half-metallic NiMnSb Heusler alloy electrodes with single, dual, and triple Ag spacers were fabricated. The NiMnSb alloy films and Ag spacers show (001) epitaxial growth in all CPP-GMR multilayer structures. The dual-spacer CPP-GMR nanojunction exhibited an enhanced CPP-GMR ratio of 11% (a change in the resistance-area product, ΔRA, of 3.9 mΩ μm2) at room temperature, which is approximately twice (thrice) of 6% (1.3 mΩ μm2) in the single-spacer device. The enhancement of the CPP-GMR effects in the dual-spacer devices could be attributed to improved interfacial spin asymmetry. Moreover, it was observed that the CPP-GMR ratios increased monotonically as the temperatures decreased. At 4.2 K, a CPP-GMR ratio of 41% (ΔRA = 10.5 mΩ μm2) was achieved in the dual-spacer CPP-GMR device. This work indicates that multispacer structures provide an efficient enhancement of CPP-GMR effects in half-metallic material-based CPP-GMR systems.

  15. Optical and electrical properties and phonon drag effect in low temperature TEP measurements of AgSbSe2 thin films

    NASA Astrophysics Data System (ADS)

    Namitha Asokan, T.; Urmila, K. S.; Jacob, Rajani; Reena Philip, Rachel; Okram, G. S.; Ganesan, V.; Pradeep, B.

    2014-05-01

    Polycrystalline thin films of silver antimony selenide have been deposited using a reactive evaporation technique onto an ultrasonically cleaned glass substrate at a vacuum of 10-5 torr. The preparative parameters, like substrate temperature and incident fluxes, have been properly controlled in order to get stoichiometric, good quality and reproducible thin film samples. The samples are characterized by XRD, SEM, AFM and a UV—vis—NIR spectrophotometer. The prepared sample is found to be polycrystalline in nature. From the XRD pattern, the average particle size and lattice constant are calculated. The dislocation density, strain and number of crystallites per unit area are evaluated using the average particle size. The dependence of the electrical conductivity on the temperature has also been studied and the prepared AgSbSe2 samples are semiconducting in nature. The AgSbSe2 thin films exhibited an indirect allowed optical transition with a band gap of 0.64 eV. The compound exhibits promising thermoelectric properties, a large Seebeck coefficient of 30 mV/K at 48 K due to strong phonon electron interaction. It shows a strong temperature dependence on thermoelectric properties, including the inversion of a dominant carrier type from p to n over a low temperature range 9-300 K, which is explained on the basis of a phonon drag effect.

  16. Electronic properties of GeTe and Ag- or Sb-substituted GeTe studied by low-temperature Te125 NMR

    DOE PAGES

    Cui, J.; Levin, E. M.; Lee, Y.; Furukawa, Y.

    2016-08-18

    We have carried out 125Te nuclear magnetic resonance (NMR) in a wide temperature range of 1.5–300 K to investigate the electronic properties of Ge50 Te50, Ag2 Ge48Te50 , and Sb2 Ge48 Te50 from a microscopic point of view. From the temperature dependence of the NMR shift (K) and nuclear spin lattice relaxation rate (1/T1), we found that two bands contribute to the physical properties of the materials. One band overlaps the Fermi level providing the metallic state where no strong electron correlations are revealed by Korringa analysis. The other band is separated from the Fermi level by an energy gapmore » of Eg/kB ~67 K, which gives rise to semiconductorlike properties. First-principles calculation reveals that the metallic band originates from the Ge vacancy while the semiconductorlike band is related to the fine structure of the density of states near the Fermi level. We find low-temperature Te125 NMR data for the materials studied here clearly show that Ag substitution increases hole concentration while Sb substitution decreases it.« less

  17. Electronic properties of GeTe and Ag- or Sb-substituted GeTe studied by low-temperature 125Te NMR

    NASA Astrophysics Data System (ADS)

    Cui, J.; Levin, E. M.; Lee, Y.; Furukawa, Y.

    2016-08-01

    We have carried out 125Te nuclear magnetic resonance (NMR) in a wide temperature range of 1.5-300 K to investigate the electronic properties of Ge50Te50 ,Ag2Ge48Te50 , and Sb2Ge48Te50 from a microscopic point of view. From the temperature dependence of the NMR shift (K ) and nuclear spin lattice relaxation rate (1 /T1 ), we found that two bands contribute to the physical properties of the materials. One band overlaps the Fermi level providing the metallic state where no strong electron correlations are revealed by Korringa analysis. The other band is separated from the Fermi level by an energy gap of Eg/kB˜67 K, which gives rise to semiconductorlike properties. First-principles calculation reveals that the metallic band originates from the Ge vacancy while the semiconductorlike band is related to the fine structure of the density of states near the Fermi level. Low-temperature 125Te NMR data for the materials studied here clearly show that Ag substitution increases hole concentration while Sb substitution decreases it.

  18. Design of Ag@C@SnO2@TiO2 yolk-shell nanospheres with enhanced photoelectric properties for dye sensitized solar cells

    NASA Astrophysics Data System (ADS)

    Zhao, Peilu; Li, Dan; Yao, Shiting; Zhang, Yiqun; Liu, Fengmin; Sun, Peng; Chuai, Xiaohong; Gao, Yuan; Lu, Geyu

    2016-06-01

    The hierarchical Ag@C@SnO2@TiO2 nanospheres (ACSTS) have been successfully synthesized by deposition of SnO2 and TiO2 on the Ag@C templates layer by layer. The size of ACSTS is ca. 360 nm while the Ag@C cores have an average diameter of about 300 nm. The rough and porous shell structure consisting of SnO2 and TiO2 ensures a large specific surface area (115.5 m2 g-1). To demonstrate how such a unique structure might lead to more excellent photovoltaic property, several kinds of dye-sensitized solar cells (DSSCs) are also fabricated using different nanospheres based photoanodes. It is found that the ACSTS based DSSC exhibits an obvious improvement in cell performance. According to various technical characterization, the ACSTS can provide dual-functions of light absorption and charge transfer, hence resulting in an enhanced short-circuit photocurrent density of 18.68 mA cm-2 and a higher FF of 63% compared with other DSSCs. The ACSTS cell finally obtains a PCE of up to 8.62%, increasing by 70.4% and 10.2% than hollow TiO2 nanospheres and Ag@C@TiO2 nanospheres based cells, respectively. The improved photovoltaic properties of ACSTS cell can be mainly ascribed to the unique microstructure and the synergistic effect of the encapsulated Ag@C cores.

  19. Impact of an Elevated Temperature Environment on Sn-Ag-Cu Interconnect Board Level High-G Mechanical Shock Performance

    NASA Astrophysics Data System (ADS)

    Lee, Tae-Kyu; Chen, Zhiqiang; Baty, Greg; Bieler, Thomas R.; Kim, Choong-Un

    2016-09-01

    The mechanical stability of Sn-Ag-Cu interconnects with low and high silver content against mechanical shock at room and elevated temperatures was investigated. With a heating element-embedded printed circuit board design, a test temperature from room temperature to 80°C was established. High impact shock tests were applied to isothermally pre-conditioned ball-grid array interconnects. Under cyclic shock testing, degradation and improved shock performances were identified associated with test temperature variation and non-solder mask defined and solder-mask defined pad design configuration differences. Different crack propagation paths were observed, induced by the effect of the elevated temperature test conditions and isothermal aging pre-conditions.

  20. Enhancement of spin polarization via Fermi level tuning in Co{sub 2}MnSn{sub 1−x}Sb{sub x} (x = 0, 0.25. 0.5, 0.75, 1) Heusler alloys

    SciTech Connect

    Singh, Mukhtiyar Thakur, Jyoti; Kashyap, Manish K.; Saini, Hardev S.

    2014-04-24

    Full potential approach has been employed to tune Fermi level in Co{sub 2}MnSn{sub 1−x}Sb{sub x} (x = 0, 0.25, 0.5, 0.75, 1) Heulser alloys for enhancement of spin polarization and finding signature of half metallicity. Present density functional theory (DFT) based calculation indicates that stoichoimetric Heusler alloy, Co{sub 2}MnSn is not a half-metallic ferromagnet but the doping of Sb in it results in the shifting of E{sup F} in well-defined energy gap which leads the 100% spin polarization in the resultant alloys. The magnetism in present alloys is governed by localized moment on Mn atom mainly. The tuning of half-metallicity using doping can be proved as an ideal technique to search the new materials which can accomplish the need of spintronics.

  1. In situ heating transmission electron microscopy observation of nanoeutectic lamellar structure in Sn-Ag-Cu alloy on Au under-bump metallization.

    PubMed

    Seo, Jong-Hyun; Yoon, Sang-Won; Kim, Kyou-Hyun; Chang, Hye-Jung; Lee, Kon-Bae; Seong, Tae-Yeon; Fleury, Eric; Ahn, Jae-Pyoung

    2013-08-01

    We investigated the microstructural evolution of Sn(96.4)Ag(2.8)Cu(0.8) solder through in situ heating transmission electron microscopy observations. As-soldered bump consisted of seven layers, containing the nanoeutectic lamella structure of AuSn and Au₅Sn phases, and the polygonal grains of AuSn₂ and AuSn₄, on Au-plated Cu bond pads. Here, we found that there are two nanoeutectic lamellar layers with lamella spacing of 40 and 250 nm. By in situ heating above 140°C, the nanoeutectic lamella of AuSn and Au₅Sn was decomposed with structural degradation by sphering and coarsening processes of the lamellar interface. At the third layer neighboring to the lamella layer, on the other hand, Au₅Sn particles with a zig-zag shape in AuSn matrix became spherical and were finally dissipated in order to minimize the interface energy between two phases. In the other layers except both lamella layers, polycrystal grains of AuSn₂ and AuSn₄ grew by normal grain growth during in situ heating. The high interface energy of nanoeutectic lamella and polygonal nanograins, which are formed by rapid solidification, acted as a principal driving force on the microstructural change during the in situ heating. PMID:23920173

  2. In situ heating transmission electron microscopy observation of nanoeutectic lamellar structure in Sn-Ag-Cu alloy on Au under-bump metallization.

    PubMed

    Seo, Jong-Hyun; Yoon, Sang-Won; Kim, Kyou-Hyun; Chang, Hye-Jung; Lee, Kon-Bae; Seong, Tae-Yeon; Fleury, Eric; Ahn, Jae-Pyoung

    2013-08-01

    We investigated the microstructural evolution of Sn(96.4)Ag(2.8)Cu(0.8) solder through in situ heating transmission electron microscopy observations. As-soldered bump consisted of seven layers, containing the nanoeutectic lamella structure of AuSn and Au₅Sn phases, and the polygonal grains of AuSn₂ and AuSn₄, on Au-plated Cu bond pads. Here, we found that there are two nanoeutectic lamellar layers with lamella spacing of 40 and 250 nm. By in situ heating above 140°C, the nanoeutectic lamella of AuSn and Au₅Sn was decomposed with structural degradation by sphering and coarsening processes of the lamellar interface. At the third layer neighboring to the lamella layer, on the other hand, Au₅Sn particles with a zig-zag shape in AuSn matrix became spherical and were finally dissipated in order to minimize the interface energy between two phases. In the other layers except both lamella layers, polycrystal grains of AuSn₂ and AuSn₄ grew by normal grain growth during in situ heating. The high interface energy of nanoeutectic lamella and polygonal nanograins, which are formed by rapid solidification, acted as a principal driving force on the microstructural change during the in situ heating.

  3. Enhanced thermoelectric performance in the p-type half-Heusler (Ti/Zr/Hf)CoSb0.8Sn0.2 system via phase separation.

    PubMed

    Rausch, Elisabeth; Balke, Benjamin; Ouardi, Siham; Felser, Claudia

    2014-12-14

    A novel approach for optimization of the thermoelectric properties of p-type Heusler compounds with a C1b structure was investigated. A successful recipe for achieving intrinsic phase separation in the n-type material based on the TiNiSn system is isoelectronic partial substitution of Ti with its heavier homologues Zr and Hf. We applied this concept to the p-type system MCoSb0.8Sn0.2 by a systematic investigation of samples with different compositions at the Ti position (M = Ti, Zr, Hf, Ti0.5Zr0.5, Zr0.5Hf0.5, and Ti0.5Hf0.5). We thus achieved an approximately 40% reduction of the thermal conductivity and a maximum figure of merit ZT of 0.9 at 700 °C. This is a 80% improvement in peak ZT from 0.5 to 0.9 at 700 °C compared to the best published value of an ingot p-type half-Heusler compound. Thus far, comparable good thermoelectric p-type materials of this structure type have only been realized by a nanostructuring process via ball milling of premelted ingot samples followed by a rapid consolidation method, like hot pressing. The herein-presented simple arc-melting fabrication method reduces the fabrication time as compared to this multi-step nanostructuring process. The high mechanical stability of the Heusler compounds is favorable for the construction of thermoelectric modules. The Vickers hardness values are close to those of the n-type material, leading to good co-processability of both materials.

  4. TiO2 nanotube array photoelectrocatalyst and Ni-Sb-SnO2 electrocatalyst bifacial electrodes: a new type of bifunctional hybrid platform for water treatment.

    PubMed

    Yang, So Young; Choi, Wonyong; Park, Hyunwoong

    2015-01-28

    Bifunctional hybrid electrodes capable of generating various reactive oxygen species (ROS) over a wide range of potentials were developed by coupling electrocatalysts and photoelectrocatalysts. To achieve this, Ni-doped Sb-SnO2 (NSS) was deposited on one side of a titanium (Ti) foil while the other side was anodized to grow a TiO2 nanotube array (TNA) for electrochemical ozone generation and photoelectrochemical hydroxyl radical generation, respectively. Surface characterization indicated that NSS and TNA were formed and spatially separated yet electrically connected through the Ti substrate. While each catalyst possessed unique electrochemical properties, the coupling of both catalysts resulted in mixed electrochemical properties that drove electrocatalysis at high potentials and photoelectrocatalysis at low potentials. The performance of the NSS/TNA electrode for phenol decomposition was ∼3 times greater than that of single-layer catalysts and ∼1.5 times greater than the combined catalytic performances of the individual NSS and TNA catalysts. This synergistic effect was attributed partly to the simultaneous generation of hydroxyl radicals and ozone, followed by the production of other ROS. A mechanism for the generation of ROS was discussed.

  5. TiO2 nanotube array photoelectrocatalyst and Ni-Sb-SnO2 electrocatalyst bifacial electrodes: a new type of bifunctional hybrid platform for water treatment.

    PubMed

    Yang, So Young; Choi, Wonyong; Park, Hyunwoong

    2015-01-28

    Bifunctional hybrid electrodes capable of generating various reactive oxygen species (ROS) over a wide range of potentials were developed by coupling electrocatalysts and photoelectrocatalysts. To achieve this, Ni-doped Sb-SnO2 (NSS) was deposited on one side of a titanium (Ti) foil while the other side was anodized to grow a TiO2 nanotube array (TNA) for electrochemical ozone generation and photoelectrochemical hydroxyl radical generation, respectively. Surface characterization indicated that NSS and TNA were formed and spatially separated yet electrically connected through the Ti substrate. While each catalyst possessed unique electrochemical properties, the coupling of both catalysts resulted in mixed electrochemical properties that drove electrocatalysis at high potentials and photoelectrocatalysis at low potentials. The performance of the NSS/TNA electrode for phenol decomposition was ∼3 times greater than that of single-layer catalysts and ∼1.5 times greater than the combined catalytic performances of the individual NSS and TNA catalysts. This synergistic effect was attributed partly to the simultaneous generation of hydroxyl radicals and ozone, followed by the production of other ROS. A mechanism for the generation of ROS was discussed. PMID:25561436

  6. Study of the effects of MeV Ag, Cu, Au, and Sn implantation on the optical properties of LiNbO{sub 3}

    SciTech Connect

    Williams, E.K.; Ila, D.; Sarkisov, S.; Curley, M.; Poker, D.B.; Hensley, D.K.; Borel, C.

    1998-02-01

    The authors present the results of characterization of linear absorption and nonlinear refractive index of Au, Ag, Cu and Sn ion implantation into LiNbO{sub 3}. Ag was implanted at 1.5 MeV to fluences of 2 to 17 {times} 10 {sup 16}/cm{sup 2} at room temperature. Au and Cu were implanted to fluences of 5 to 20 {times} 10{sup 16}/cm{sup 2} at an energy of 2.0 MeV. Sn was implanted to a fluence of 1.6 {times} 10{sup 17}/cm{sup 2} at 160 kV. Optical absorption spectrometry indicated an absorption peak for the Au implanted samples after heat treatment at 1,000 C at 620 nm. The Ag implanted samples absorption peaks shifted from 450 nm before heat treatment to 550 nm after 500 C for 1h. Heat treatment at 800 C returned the Ag implanted crystals to a clear state. Cu nanocluster absorption peaks disappears at 500 C. No Sn clusters were observed by optical absorption or XRD. The size of the Ag and Au clusters as a function of heat treatment were determined from the absorption peaks. The Ag clusters did not change appreciably in size with heat treatment. The Au clusters increased from 3 to 9 nm diameter upon heat treatment at 1000 deg C. TEM analysis performed on a Au implanted crystal indicated the formation of Au nanocrystals with facets normal to the c-axis. Measurements of the nonlinear refractive indices were carried out using the Z-scan method with a tunable dye laser pumped by a frequency doubled mode-locked Nd:YAG laser. The dye laser had a 4.5 ps pulse duration time and 76 MHz pulse repetition rate (575 nm).

  7. Study of the effects of MeV Ag, Cu, Au, and Sn implantation on the optical properties of LiNbO3

    NASA Technical Reports Server (NTRS)

    Williams, E. K.; Ila, D.; Sarkisov, S.; Curley, M.; Poker, D. B.; Hensley, D. K.; Borel, C.

    1998-01-01

    The authors present the results of characterization of linear absorption and nonlinear refractive index of Au, Ag, Cu and Sn ion implantation into LiNbO3. Ag was implanted at 1.5 MeV to fluences of 2 to 17 x 17(exp 16)/sq cm at room temperature. Au and Cu were implanted to fluences of 5 to 20 x 10(exp 16)/sq cm at an energy of 2.0 MeV. Sn was implanted to a fluence of 1.6 x 10(exp 17)/sq cm at 160 kV. Optical absorption spectrometry indicated an absorption peak for the Au implanted samples after heat treatment at 1,000 C at approx. 620 nm. The Ag implanted samples absorption peaks shifted from approx. 450 nm before heat treatment to 550 nm after 500 C for 1h. Heat treatment at 800 C returned the Ag implanted crystals to a clear state. Cu nanocluster absorption peaks disappears at 500 C. No Sn clusters were observed by optical absorption or XRD. The size of the Ag and Au clusters as a function of heat treatment were determined from the absorption peaks. The Ag clusters did not change appreciably in size with heat treatment. The Au clusters increased from 3 to 9 nm diameter upon heat treatment at 1000 C. TEM analysis performed on a Au implanted crystal indicated the formation of Au nanocrystals with facets normal to the c-axis. Measurements of the nonlinear refractive indices were carried out using the Z-scan method with a tunable dye laser pumped by a frequency doubled mode-locked Nd:YAG laser. The dye laser had a 4.5 ps pulse duration time and 76 MHz pulse repetition rate (575 nm).

  8. High-Density Read-Only Memory Disc with Ag11In12Sb51Te26 Super-Resolution Mask Layer

    NASA Astrophysics Data System (ADS)

    Zhang, Feng; Wang, Yang; Xu, Wen-Dong; Shi, Hong-Ren; Wei, Jing-Song; Gan, Fu-Xi

    2004-10-01

    A novel read-only memory (ROM) disc with an Ag11In12Sb51Te26 super-resolution mask layer is proposed and investigated for the first time to our knowledge. The carrier-to-noise ratio of more than 40 dB could be obtained from small pits (380 nm), which are below the readout resolution limit (400 nm), in our dynamic setup with a wavelength of 632.8 nm and numerical aperture of 0.40. Dependences of carrier-to-noise ratio on readout power, readout velocity and film thickness are studied. The results show that the optimum film thickness is 20-50 nm and the corresponding carrier-to-noise ratio is more than 40 dB at readout power of 4 mW and readout velocity of 2 m/s in our experiment. The super-resolution readout mechanism for this ROM disc is also discussed.

  9. Stability of molybdenum nanoparticles in Sn-3.8Ag-0.7Cu solder during multiple reflow and their influence on interfacial intermetallic compounds

    SciTech Connect

    Haseeb, A.S.M.A. Arafat, M.M. Johan, Mohd Rafie

    2012-02-15

    This work investigates the effects of molybdenum nanoparticles on the growth of interfacial intermetallic compound between Sn-3.8Ag-0.7Cu solder and copper substrate during multiple reflow. Molybdenum nanoparticles were mixed with Sn-3.8Ag-0.7Cu solder paste by manual mixing. Solder samples were reflowed on a copper substrate in a 250 Degree-Sign C reflow oven up to six times. The molybdenum content of the bulk solder was determined by inductive coupled plasma-optical emission spectrometry. It is found that upon the addition of molybdenum nanoparticles to Sn-3.8Ag-0.7Cu solder, the interfacial intermetallic compound thickness and scallop diameter decreases under all reflow conditions. Molybdenum nanoparticles do not appear to dissolve or react with the solder. They tend to adsorb preferentially at the interface between solder and the intermetallic compound scallops. It is suggested that molybdenum nanoparticles impart their influence on the interfacial intermetallic compound as discrete particles. The intact, discrete nanoparticles, by absorbing preferentially at the interface, hinder the diffusion flux of the substrate and thereby suppress the intermetallic compound growth. - Highlights: Black-Right-Pointing-Pointer Mo nanoparticles do not dissolve or react with the SAC solder during reflow. Black-Right-Pointing-Pointer Addition of Mo nanoparticles results smaller IMC thickness and scallop diameter. Black-Right-Pointing-Pointer Mo nanoparticles influence the interfacial IMC through discrete particle effect.

  10. A high-pressure route to thermoelectrics with low thermal conductivity: The solid solution series AgIn{sub x}Sb{sub 1−x}Te{sub 2} (x=0.1–0.6)

    SciTech Connect

    Schröder, Thorsten; Rosenthal, Tobias; Souchay, Daniel; Petermayer, Christian; Grott, Sebastian; Scheidt, Ernst-Wilhelm; Gold, Christian; Scherer, Wolfgang; Oeckler, Oliver

    2013-10-15

    Metastable rocksalt-type phases of the solid solution series AgIn{sub x}Sb{sub 1−x}Te{sub 2} (x=0.1, 0.2, 0.4, 0.5 and 0.6) were prepared by high-pressure synthesis at 2.5 GPa and 400 °C. In these structures, the coordination number of In{sup 3+} is six, in contrast to chalcopyrite ambient-pressure AgInTe{sub 2} with fourfold In{sup 3+} coordination. Transmission electron microscopy shows that real-structure phenomena and a certain degree of short-range order are present, yet not very pronounced. All three cations are statistically disordered. The high degree of disorder is probably the reason why AgIn{sub x}Sb{sub 1−x}Te{sub 2} samples with 0.4AgSbTe{sub 2} (κ ∼0.6 W/K m). The highest ZT value (0.15 at 300 K) is observed for AgIn{sub 0.5}Sb{sub 0.5}Te{sub 2}, mainly due to its high Seebeck coefficient of 160 µV/K. Temperature-dependent X-ray powder patterns indicate that the solid solutions are metastable at ambient pressure. At 150 °C, the quaternary compounds decompose into chalcopyrite-type AgInTe{sub 2} and rocksalt-type AgSbTe{sub 2}. - Graphical abstract: Reaction scheme, temperature characteristics of the ZT value and a selected-area electron diffraction pattern (background) of AgIn{sub 0.5}Sb{sub 0.5}Te{sub 2}, which crystallizes in a rocksalt-type structure with statistical cation disorder. Display Omitted - Highlights: • High-pressure synthesis yields the novel solid solution series AgIn{sub x}Sb{sub 1−x}Te{sub 2}. • In contrast to AgInTe{sub 2}, the compounds are inert at ambient pressure. • HRTEM shows no pronounced short-range order in the disordered NaCl-type structure. • The metastable phases exhibit very low total thermal conductivities <0.5 W/K m. • ZT values of 0

  11. Phase Structures and Piezoelectric Properties of (K,Na,Li)(Nb,Sb)O3-(Bi,Ag)ZrO3 Lead-Free Ceramics

    NASA Astrophysics Data System (ADS)

    Li, ZhiPeng; Zhang, Yang; Li, LingYu; Li, JianKang; Zhai, JiWei

    2016-06-01

    Samples in the pseudoternary lead-free piezoelectric ceramic system 0.94KNN-(0.06 - x)LiSbO3- x(Bi0.5Ag0.5)ZrO3 were prepared using a solid-state reaction technique and their phase transition behavior and electrical properties studied. Results showed that BAZ diffuses into KNN-LS to form a new solid solution, and induces a phase transition from tetragonal to rhombohedral phase with increase of x. At 0.02 ≤ x ≤ 0.03, coexistence of tetragonal and rhombohedral phases is observed, and enhanced piezoelectric properties are achieved in this composition range due to the polymorphic phase transition near room temperature. Doping with (Bi0.5Ag0.5)ZrO3 effectively promotes densification and further enhances the piezoelectric and dielectric properties of of the ceramics. Moreover, the ceramic with x = 0.025 possesses excellent electrical properties of k p = 42.3%, {d_{33}^{*}} = 320 pm/V and d 33 = 235 pC/N, tan δ = 0.039, and T c = 326°C. This result indicates that 0.94KNN-0.035LS-0.025BAZ ceramic is a promising lead-free material for practical applications.

  12. Hardening by cooling rate control and post-firing heat treatment in Pd-Ag-Sn alloy for bonding porcelain.

    PubMed

    Yu, Young-Jun; Seol, Hyo-Joung; Cho, Mi-Hyang; Kim, Hyung-Il; Kwon, Yong Hoon

    2016-01-01

    The aim of this study was to determine the hardening effect by controlling the cooling rate during the porcelain firing process and performing an additional post-firing heat treatment in a Pd-Ag-Sn alloy. The most effective cooling rate for alloy hardening was determined by cooling the specimens at various cooling rates after oxidation treatment. A subsequent porcelain firing simulation followed by cooling at the selected cooling rate was performed. A post-firing heat treatment was then done at 600°C in a porcelain furnace. The hardening mechanism was characterized by a hardness test, X-ray diffraction, field emission scanning electron microscopy and energy dispersive X-ray spectroscopy. Alloy softening occurred during the porcelain firing process followed by cooling at a controlled cooling rate. A post-firing heat treatment allowed apparent precipitation hardening. It is advisable to perform a postfiring heat treatment at 600°C in a porcelain furnace by annealing metal substructure after porcelain fusing.

  13. Hardening by cooling rate control and post-firing heat treatment in Pd-Ag-Sn alloy for bonding porcelain.

    PubMed

    Yu, Young-Jun; Seol, Hyo-Joung; Cho, Mi-Hyang; Kim, Hyung-Il; Kwon, Yong Hoon

    2016-01-01

    The aim of this study was to determine the hardening effect by controlling the cooling rate during the porcelain firing process and performing an additional post-firing heat treatment in a Pd-Ag-Sn alloy. The most effective cooling rate for alloy hardening was determined by cooling the specimens at various cooling rates after oxidation treatment. A subsequent porcelain firing simulation followed by cooling at the selected cooling rate was performed. A post-firing heat treatment was then done at 600°C in a porcelain furnace. The hardening mechanism was characterized by a hardness test, X-ray diffraction, field emission scanning electron microscopy and energy dispersive X-ray spectroscopy. Alloy softening occurred during the porcelain firing process followed by cooling at a controlled cooling rate. A post-firing heat treatment allowed apparent precipitation hardening. It is advisable to perform a postfiring heat treatment at 600°C in a porcelain furnace by annealing metal substructure after porcelain fusing. PMID:27041022

  14. Fracture of Sn-Ag-Cu Solder Joints on Cu Substrates: I. Effects of Loading and Processing Conditions

    NASA Astrophysics Data System (ADS)

    Huang, Z.; Kumar, P.; Dutta, I.; Pang, J. H. L.; Sidhu, R.; Renavikar, M.; Mahajan, R.

    2012-02-01

    During service, microcracks form inside solder joints, making microelectronic packages highly prone to failure on dropping. Hence, the fracture behavior of solder joints under drop conditions at high strain rates and under mixed-mode conditions is a critically important design consideration for robust joints. This study reports on the effects of joint processing and loading conditions on the microstructure and fracture response of Sn-3.8%Ag-0.7%Cu (SAC387) solder joints attached to Cu substrates. The impact of parameters which control the microstructure (reflow condition, aging) as well as loading conditions (strain rate and loading angle) are explicitly studied. A methodology based on the calculation of the critical energy release rate, G C, using compact mixed-mode (CMM) samples was developed to quantify the fracture toughness of the joints under conditions of adhesive (i.e., interface-related) fracture. In general, higher strain rate and increased mode-mixity resulted in decreased G C. G C also decreased with increasing dwell time at reflow temperature, which produced a thicker intermetallic layer at the solder-substrate interface. Softer solders, produced by slower cooling following reflow, or post-reflow aging, showed enhanced G C. The sensitivity of the fracture toughness to all of the aforementioned parameters reduced with an increase in the mode-mixity. Fracture mechanisms, elucidating the effects of the loading conditions and process parameters, are briefly highlighted.

  15. Mechanical Behavior of Sn-3.0Ag-0.5Cu/Cu Solder Joints After Isothermal Aging

    NASA Astrophysics Data System (ADS)

    Nguyen, Van Luong; Chung, Chin-Sung; Kim, Ho-Kyung

    2016-01-01

    The tensile impact behavior of lead-free Sn-3Ag-0.5Cu/Cu solder joints aged at 413 K and 453 K for times ranging from 24 h to 1000 h has been investigated in this study. The activation energy for growth of the intermetallic compound (IMC) layer was estimated and compared with literature values. Additionally, the tensile strength of solder joints with IMC thickness of 17.6 μm was found to be more sensitive to the strain rate as compared with solder joints with thinner IMC layers. Equations representing the relationships among the effective stress, strain rate, aging time, and aging temperature as well as IMC thickness were established using matrix laboratory (MATLAB) software. These equations show that the tensile strength decreases with increase in the IMC thickness to about 8 μm, after which it becomes nearly constant when the IMC thickness is between approximately 8 μm and 14 μm, before decreasing significantly when the IMC thickness exceeds 14 μm. The main reason for these characteristics was excessive increase in the IMC thickness of solder joints, causing a change in the stress concentration of the tensile load from the protruding region to the inside of the IMC layer at the same tested strain rate.

  16. Determination of hydride forming elements (As, Sb, Se, Sn) and Hg in environmental reference materials as acid slurries by on-line hydride generation inductively coupled plasma mass spectrometry

    NASA Astrophysics Data System (ADS)

    Ribeiro, Anderson Schwingel; Vieira, Mariana Antunes; Curtius, Adilson José

    2004-02-01

    A method for the determination of As, Hg, Sb, Se and Sn in environmental and in geological reference materials, as acidified slurries, by flow injection (FI) coupled to a hydride generation system (HG) and detection by inductively coupled plasma mass spectrometry (ICP-MS) is proposed. The HG unit has a gas liquid separator and a drying unit for the generated vapor. The slurries were prepared by two procedures. Approximately 50 mg of the reference material, ground to a particle size ≤50 μm, was mixed with acid solutions in an ultrasonic bath. In Procedure A, the medium was a hydrochloric acid solution while in Procedure B, the medium was aqua regia plus a hydrochloric acid solution. The conditions for the slurry formation and the instrumental parameters were optimized. Harsh conditions were used in the slurry preparation in order to reduce the hydride forming analytes to their lower oxidation states, As (III), Se(IV), Sb(III) and Sn(II), before reacting with sodium tetrahydroborate. To test the accuracy, 10 certified reference materials were analyzed (four sediments, three coals, one coal fly ash and two sewage sludges), with the analyte concentrations mostly in the μg g -1 level. Good agreements with the certified values were obtained for Hg, Sb and Sn in the sediments using Procedure A and calibration against aqueous standard solutions. Using Procedure B, good results were obtained for Hg, Se and Sn in the sediment samples, for Se in the coal and coal fly ash samples and for Hg in the sewage sludge samples, also using external calibration with aqueous standard solutions. For As in sediments, coals and coal fly ash, Procedure B and the analyte addition calibration was required, indicating matrix effects. The relative standard deviations were lower than 5%, demonstrating a good precision for slurry analysis. The limits of quantification (10 times the standard deviation; n=10), in the samples, in ng g -1, were: 20 for As, 60 for Hg, 80 for Sb, 200 for Se and 90

  17. Wetting behavior of molten In-Sn alloy on bulk amorphous and crystalline Cu{sub 40}Zr{sub 44}Al{sub 8}Ag{sub 8}

    SciTech Connect

    Ma, G. F.; Zhang, H. F.; Li, H.; Hu, Z. Q.

    2007-10-29

    Using the sessile-drop method, the wettability of the molten In-Sn alloy on bulk amorphous and crystalline Cu{sub 40}Zr{sub 44}Al{sub 8}Ag{sub 8} alloy was studied at different temperatures. It was found that the equilibrium contact angle of In-Sn alloy melt on bulk amorphous substrate was smaller than that of the crystalline one. An intermetallic compound existed at the interface of In-Sn alloy on amorphous Cu{sub 40}Zr{sub 44}Al{sub 8}Ag{sub 8}, while no intermediate reaction layer was formed at the interface of In-Sn alloy on crystalline Cu{sub 40}Zr{sub 44}Al{sub 8}Ag{sub 8} in the temperature range studied.

  18. Determination of the magnetic ground state in the martensite phase of Ni-Mn-Z (Z = In, Sn and Sb) off-stoichiometric Heusler alloys by nonlinear AC susceptibility.

    PubMed

    Umetsu, R Y; Fujita, A; Ito, W; Kanomata, T; Kainuma, R

    2011-08-17

    DC and AC magnetic measurements were carried out to clarify the difference in the magnetic ground state depending on the kinds of Z element used in the martensite phase in Ni-Mn-Z (Z = In, Sn and Sb) off-stoichiometric Heusler alloys. Magnetic field cooling effects were observed in the DC thermomagnetization curves in the low temperature regions, and a frequency dependence on AC susceptibility was also observed in both real and imaginary parts of the susceptibility. Negative divergence was clearly observed in nonlinear AC susceptibility only for the Ni(50)Mn(40)Sb(10) alloy, suggesting that the magnetic feature of its ground state is the spin-glass state. The magnetic ground state of the martensite phase in these alloys would relate to the magnetic configuration of the Mn atoms in the ferromagnetic austenite phase.

  19. Microstructural, wetting, and mechanical characteristics of Sn-57.6Bi-0.4Ag alloys doped with metal-organic compounds

    NASA Astrophysics Data System (ADS)

    Oh, Sung-Tag; Lee, Jong-Hyun

    2014-03-01

    The metallurgical and mechanical properties of the commercial low-temperature solder alloy, Sn-57.6Bi-0.4Ag (wt. %), were altered by doping with each of Pd, Co, Zn, and Ni, through reactive reflow processing by using the appropriate metal-organic compound. The use of metal-acetates resulted in appropriate doping concentrations, while the use of metal-acetylacetonates and -stearates resulted in insufficient doping concentrations. This indicates that the degree of doping is strongly dependent on the nature of the metal-organic compound used in the reactive reflow process. Notably, a concurrent decrease in the melting point and the degree of undercooling were observed only in the case of the Pd-doped alloy. In addition, the Pd-doped alloy exhibited an increase in the fraction of the primary β-Sn phase in its microstructure, and greater wettability as tested on a Cu plate. Meanwhile, the Co-doped alloy exhibited a notable increase in the size and spacing of its lamellar structure, and the Ni-doped alloy showed a refinement of its lamellar structure. Accordingly, doping with Pd and Co mitigated the brittleness of the parent Sn-57.6Bi-0.4Ag alloy, which thereby showed a pronounced increase in its plastic displacement during shear tests. Considering the increase in wettability and reduction in brittleness of the original alloy, Pd is considered to be the most suitable dopant, among all the different doping elements analyzed in this study.

  20. Comparison of Sn-Ag-Cu Solder Alloy Intermetallic Compound Growth Under Different Thermal Excursions for Fine-Pitch Flip-Chip Assemblies

    NASA Astrophysics Data System (ADS)

    Tian, Ye; Liu, Xi; Chow, Justin; Wu, Yi Ping; Sitaraman, Suresh K.

    2013-08-01

    The intermetallic compound (IMC) evolution in Cu pad/Sn-Ag-Cu solder interface and Sn-Ag-Cu solder/Ni pad interface was investigated using thermal shock experiments with 100- μm-pitch flip-chip assemblies. The experiments show that low standoff height of solder joints and high thermomechanical stress play a great role in the interfacial IMC microstructure evolution under thermal shock, and strong cross-reaction of pad metallurgies is evident in the intermetallic growth. Furthermore, by comparing the IMC growth during thermal aging and thermal shock, it was found that thermal shock accelerates IMC growth and that kinetic models based on thermal aging experiments underpredict IMC growth in thermal shock experiments. Therefore, new diffusion kinetic parameters were determined for the growth of (Cu,Ni)6Sn5 using thermal shock experiments, and the Cu diffusion coefficient through the IMC layer was calculated to be 0.2028 μm2/h under thermal shock. Finite-element models also show that the solder stresses are higher under thermal shock, which could explain why the IMC growth is faster and greater under thermal shock cycling as opposed to thermal aging.

  1. Evolution of Microstructure in Brazed Joints of Austenitic-Martensitic Stainless Steel with Pure Silver Obtained with Ag-27Cu-5Sn Brazing Filler Material

    NASA Astrophysics Data System (ADS)

    Gangadharan, S.; Sivakumar, D.; Venkateswaran, T.; Kulkarni, Kaustubh

    2016-10-01

    Brazing of an austenitic-martensitic stainless steel (AMSS) with pure silver was carried out at 1053 K, 1073 K, and 1093 K (780 °C, 800 °C, and 820 °C) with Ag-27Cu-5Sn (wt pct) as brazing filler material (BFM). Wettability of the liquid BFM over base AMSS surface was found to be poor. Application of nickel coating to the steel was observed to enhance the wettability and to enable the formation of a good bond between BFM and the steel. The mechanism responsible for enhanced metallurgical bonding of the BFM with AMSS in the presence of nickel coating was explained based on diffusional interactions and uphill diffusion of iron, chromium and nickel observed in the brazed microstructure. Good diffusion-assisted zone was observed to form on silver side at all three temperatures. Four phases were encountered within the joint including silver solid solution, copper solid solution, Cu3Sn intermetallic and Ni-Fe solid solution. The Cu3Sn intermetallic was present in small amounts in the joints brazed at 1053 K and 1073 K (780 °C and 800 °C). The joint formed at 1093 K (820 °C) exhibited the absence of Cu3Sn, fewer defects and larger diffusion-assisted zone. Hardness of base AMSS was found to reduce during brazing due to austenite reversion and post-brazing sub-zero treatment for 2.5 hours was found suitable to recover the hardness.

  2. Control of Surface Plasmon Resonance of Au/SnO2 by Modification with Ag and Cu for Photoinduced Reactions under Visible-Light Irradiation over a Wide Range.

    PubMed

    Tanaka, Atsuhiro; Hashimoto, Keiji; Kominami, Hiroshi

    2016-03-18

    Gold particles supported on tin(IV) oxide (0.2 wt% Au/SnO2) were modified with copper and silver by the multistep photodeposition method. Absorption around λ=550 nm, attributed to surface plasmon resonance (SPR) of Au, gradually shifted to longer wavelengths on modification with Cu and finally reached λ=620 nm at 0.8 wt% Cu. On the other hand, the absorption shifted to shorter wavelength with increasing amount of Ag and reached λ=450 nm at 0.8 wt% Ag. These Cu- and Ag-modified 0.2 wt% Au/SnO2 materials (Cu-Au/SnO2 and Ag-Au/SnO2) and 1.0 wt% Au/SnO2 were used for mineralization of formic acid to carbon dioxide in aqueous suspension under irradiation with visible light from a xenon lamp and three kinds of light-emitting diodes with different wavelengths. The reaction rates for the mineralization of formic acid over these materials depend on the wavelength of light. Apparent quantum efficiencies of Cu-Au/SnO2, Au/SnO2, and Ag-Au/SnO2 reached 5.5% at 625 nm, 5.8% at 525 nm, and 5.1% at 450 nm, respectively. These photocatalysts can also be used for selective oxidation of alcohols to corresponding carbonyl compounds in aqueous solution under visible-light irradiation. Broad responses to visible light in formic acid mineralization and selective alcohol oxidation were achieved when the three materials were used simultaneously.

  3. Impact of Cooling Rate-Induced Recrystallization on High G Mechanical Shock and Thermal Cycling in Sn-Ag-Cu Solder Interconnects

    NASA Astrophysics Data System (ADS)

    Lee, Tae-Kyu; Bieler, Thomas R.; Kim, Choong-Un

    2016-01-01

    The mechanical stability and thermo-mechanical fatigue performance of solder joints with low silver content Sn-1.0Ag-0.5Cu (wt.%) (SAC105) alloy based on different cooling rates are investigated in high G level shock environment and thermal cycling conditions. The cooling rate-controlled samples ranging from 1°C/min to 75°C/min cooling rate, not only show differences in microstructure, where a fine poly-granular microstructure develops in the case of fast cooling versus normal cooling, but also show various shock performances based on the microstructure changes. The fast cooling rate improves the high G shock performance by over 90% compared to the normal cooled SAC105 alloy air-cooling environment commonly used after assembly reflow. The microstructure effect on thermal cycling performance is also discussed, which is analyzed based on the Sn grain orientation, interconnect stability, and solder joint bulk microstructure.

  4. Microstructural characterization and mechanical property of active soldering anodized 6061 Al alloy using Sn-3.5Ag-xTi active solders

    SciTech Connect

    Wang, Wei-Lin Tsai, Yi-Chia

    2012-06-15

    Active solders Sn-3.5Ag-xTi varied from x = 0 to 6 wt.% Ti addition were prepared by vacuum arc re-melting and the resultant phase formation and variation of microstructure with titanium concentration were analyzed using X-ray diffraction, optical microscopy and scanning electron microscopy. The Sn-3.5Ag-xTi active solders are used as metallic filler to join with anodized 6061 Al alloy for potential applications of providing a higher heat conduction path. Their joints and mechanical properties were characterized and evaluated in terms of titanium content. The mechanical property of joints was measured by shear testing. The joint strength was very dependent on the titanium content. Solder with a 0.5 wt.% Ti addition can successfully wet and bond to the anodized aluminum oxide layers of Al alloy and posses a shear strength of 16.28 {+-} 0.64 MPa. The maximum bonding strength reached 22.24 {+-} 0.70 MPa at a 3 wt.% Ti addition. Interfacial reaction phase and chemical composition were identified by a transmission electron microscope with energy dispersive spectrometer. Results showed that the Ti element reacts with anodized aluminum oxide to form Al{sub 3}Ti-rich and Al{sub 3}Ti phases at the joint interfaces. - Highlights: Black-Right-Pointing-Pointer Active solder joining of anodized Al alloy needs 0.5 wt.% Ti addition for Sn-3.5Ag. Black-Right-Pointing-Pointer The maximum bonding strength occurs at 3 wt.% Ti addition. Black-Right-Pointing-Pointer The Ti reacts with anodized Al oxide to form Al{sub 3}Ti-rich and Al{sub 3}Ti at joint interface.

  5. Reactions of a cyclodimethylsiloxane (Me2SiO)6 with silver salts of weakly coordinating anions; crystal structures of [Ag(Me2SiO)6][Al] ([Al] = [FAl{OC(CF3)3}3], [Al{OC(CF3)3}4]) and their comparison with [Ag(18-crown-6)]2[SbF6]2.

    PubMed

    Cameron, T Stanley; Decken, Andreas; Krossing, Ingo; Passmore, Jack; Rautiainen, J Mikko; Wang, Xinping; Zeng, Xiaoqing

    2013-03-18

    Two silver-cyclodimethylsiloxane cation salts [AgD6][Al] ([Al] = [Al(ORF)4](1) or [FAl(OR(F))3](2), R(F) = C(CF3)3, D = Me2SiO) were prepared by the reactions of Ag[Al] with D6 in SO2(l). For a comparison the [Ag(18-crown-6)]2[SbF6]2(3) salt was prepared by the reaction of Ag[SbF6] and 18-crown-6 in SO2(l). The compounds were characterized by IR, multinuclear NMR, and single crystal X-ray crystallography. The structures of 1 and 2 show that D6 acts as a pseudo crown ether toward Ag(+). The stabilities and bonding of [MDn](+) and [M(18-crown-6)](+) (M = Ag, Li, n = 4-8) complexes were studied with theoretical calculations. The calculations predicted that D6 adopts a puckered C(i) symmetric structure in the gas phase in contrast to previous reports. 18-Crown-6 was calculated to bind more strongly to Li(+) and Ag(+) than D6. (29)Si[(1)H] NMR results in solution, and calculations in the gas phase established that a hard Lewis acid Li(+) binds more strongly to D6 than Ag(+). A comparison of the [MD(n)](+) complex stabilities showed D7 to form the most stable metal complexes in the gas phase and the solid state and explained why [AgD7][SbF6] was isolated in a previous reaction where ring transformations resulted in an equilibrium of [AgD(n)](+) complexes. In contrast, the isolations of 1 and 2 were possible because the corresponding equilibrium of [AgD(n)](+) complexes was not observed with [Al](-) anions. The formation of the dinuclear complex salt 3 instead of the corresponding mononuclear complex salt was shown to be driven by the gain in lattice enthalpy in the solid state. The bonding to Li(+) in D6 and 18-crown-6 metal complexes was described by a quantum theory of atoms in molecules (QTAIM) analysis to be mostly electrostatic while the bonding to Ag(+) also had a significant charge transfer component. The charge transfer from both D6 and 18-crown-6 to Ag(+) and Li(+) metal ions was depicted by the QTAIM analysis to be of similar strength, and the difference in the

  6. Effect of Reflow Time on Wetting Behavior, Microstructure Evolution, and Joint Strength of Sn-2.5Ag-0.5Cu Solder on Bare and Nickel-Coated Copper Substrates

    NASA Astrophysics Data System (ADS)

    Sona, Mrunali; Prabhu, K. Narayan

    2016-07-01

    The effect of reflow time on wetting behavior of Sn-2.5Ag-0.5Cu lead-free solder on bare and nickel-coated copper substrates has been investigated. The solder alloy was reflowed at 270°C for various reflow times of 10 s, 100 s, 300 s, and 500 s. On bare copper substrate, the intermetallic compound (IMC) thickness increased with increase in reflow time, whereas on Ni-coated Cu substrate, the IMC thickness increased up to 300 s followed by a drop for solder alloy reflowed for 500 s. The spreading behavior of the solder alloy was categorized into capillary, gravity (diffusion), and viscous zones. Gravity zone was obtained from 3.8 ± 0.43 s to 38.97 ± 3.38 s and from 5.99 ± 0.5 s to 77.82 ± 8.84 s for the Sn-2.5Ag-0.5Cu/Cu and Sn-2.5Ag-0.5Cu/Ni/Cu system, respectively. Sn-2.5Ag-0.5Cu solder alloy was also reflowed for the period corresponding to the end of the gravity zone (40 s and 80 s on bare and Ni-coated Cu, respectively). The joint strength was maximum at reflow time of 40 s and 80 s for the Sn-2.5Ag-0.5Cu/Cu and Sn-2.5Ag-0.5Cu/Ni/Cu system, respectively. The dynamic contact angle at the end of the gravity (diffusion) zone ( θ gz) was found to be a better parameter compared with the stabilized contact angle ( θ f) to assess the effect of the wettability of the liquid solder on the microstructure and joint strength. The present investigation reveals the significance of the gravity zone in assessment of optimum reflow time for lead-free solder alloys.

  7. Fabrication of Cu-Ni mixed phase layer using DC electroplating and suppression of Kirkendall voids in Sn-Ag-Cu solder joints

    NASA Astrophysics Data System (ADS)

    Chee, Sang-Soo; Lee, Jong-Hyun

    2014-05-01

    A solderable layer concurrently containing Cu-rich and Ni-rich phases (mixed-phase layer, MPL) was fabricated by direct current electroplating under varying process conditions. Current density was considered as the main parameter to adjust the microstructure and composition of MPL during the electroplating process, and deposit thickness were evaluated as functions of plating time. As a result, it was observed that the coral-like structure that consisted of Cu-rich and Ni-rich phases grew in the thickness direction. The most desirable microstructure was obtained at a relatively low current density of 0.4 mA/cm2. In other words, the surface was the smoothest and defect-free at this current density. The electroplating rate was slightly enhanced with an increase in current density. Investigations of its solid-state reaction properties, including the formation of Kirkendall voids, were also carried out after reflow soldering with Sn-3.0 Ag-0.5 Cu solder balls. In the solid-state aging experiment at 125°C, Kirkendall voids at the normal Sn-3.0 Ag-0.5 Cu solder/Cu interface were easily formed after just 240 h. Meanwhile, the presence of an intermetallic compound (IMC) layer created in the solder/MPL interface indicated a slightly lower growth rate, and no Kirkendall voids were observed in the IMC layer even after 720 h.

  8. Microstructure and Grain Orientation Evolution in Sn-3.0Ag-0.5Cu Solder Interconnects Under Electrical Current Stressing

    NASA Astrophysics Data System (ADS)

    Chen, Hongtao; Hang, Chunjin; Fu, Xing; Li, Mingyu

    2015-10-01

    In situ observation was performed on cross-sections of Sn-3.0Ag-0.5Cu solder interconnects to track the evolution of microstructure and grain orientation under electrical current stressing. Cross-sections of Cu/Ni-Sn-3.0Ag-0.5Cu-Ni/Cu sandwich-structured solder interconnects were prepared by the standard metallographic method and subjected to electrical current stressing for different times. The electron backscatter diffraction technique was adopted to characterize the grain orientation and structure of the solder interconnects. The results show that metallization dissolution and intermetallic compound (IMC) migration have close relationships with the grain orientation and structure of the solder interconnects. Ni metallization dissolution at the cathode interface and IMC migration in the solder bulk can be accelerated when the c-axis of the grain is parallel to the electron flow direction, while no observable change was found when the c-axis of the grain was perpendicular to the electron flow direction. IMC can migrate along or be blocked at the grain boundary, depending on the misorientation between the current flow direction and grain boundary.

  9. Effect of Joint Scale and Processing on the Fracture of Sn-3Ag-0.5Cu Solder Joints: Application to Micro-bumps in 3D Packages

    NASA Astrophysics Data System (ADS)

    Talebanpour, B.; Huang, Z.; Chen, Z.; Dutta, I.

    2016-01-01

    In 3-dimensional (3D) packages, a stack of dies is vertically connected to each other using through-silicon vias and very thin solder micro-bumps. The thinness of the micro-bumps results in joints with a very high volumetric proportion of intermetallic compounds (IMCs), rendering them much more brittle compared to conventional joints. Because of this, the reliability of micro-bumps, and the dependence thereof on the proportion of IMC in the joint, is of substantial concern. In this paper, the growth kinetics of IMCs in thin Sn-3Ag-0.5Cu joints attached to Cu substrates were analyzed, and empirical kinetic laws for the growth of Cu6Sn5 and Cu3Sn in thin joints were obtained. Modified compact mixed mode fracture mechanics samples, with adhesive solder joints between massive Cu substrates, having similar thickness and IMC content as actual micro-bumps, were produced. The effects of IMC proportion and strain rate on fracture toughness and mechanisms were investigated. It was found that the fracture toughness G C decreased with decreasing joint thickness ( h Joint). In addition, the fracture toughness decreased with increasing strain rate. Aging also promoted alternation of the crack path between the two joint-substrate interfaces, possibly proffering a mechanism to enhance fracture toughness.

  10. Viscosity and Electrical Conductivity of the Liquid Sn-3.8Ag-0.7Cu Alloy with Minor Co Admixtures

    NASA Astrophysics Data System (ADS)

    Yakymovych, A.; Sklyarchuk, V.; Plevachuk, Yu.; Sokoliuk, B.

    2016-08-01

    The viscosity and electrical conductivity as structure-sensitive transport properties of the liquid metals and alloys are important for modeling of the melting and solidification processes. The viscosity and electrical conductivity data provide additional information about the influence of impurities on the structure and physicochemical properties of the liquid metal matrix, which is useful for understanding of structural transformations in the liquid state. In the present work, an impact of minor Co admixtures on the viscosity and electrical conductivity of liquid Sn-3.8Ag-0.7Cu alloy was studied. An increase in viscosity with minor Co admixtures is in a satisfactory agreement with model predicted data obtained from thermodynamic approaches and suggests a significant impact of interatomic interactions. Cobalt admixtures significantly affect the electrical conductivity, which gradually decreases with increasing the amount of Co. Additionally, the sample microstructure has been examined using x-ray diffraction and scanning electron microscopy analyses. The formation of Sn-based Co-Sn intermetallic compounds was detected in the alloys with more than 1 wt.% Co.

  11. Viscosity and Electrical Conductivity of the Liquid Sn-3.8Ag-0.7Cu Alloy with Minor Co Admixtures

    NASA Astrophysics Data System (ADS)

    Yakymovych, A.; Sklyarchuk, V.; Plevachuk, Yu.; Sokoliuk, B.

    2016-10-01

    The viscosity and electrical conductivity as structure-sensitive transport properties of the liquid metals and alloys are important for modeling of the melting and solidification processes. The viscosity and electrical conductivity data provide additional information about the influence of impurities on the structure and physicochemical properties of the liquid metal matrix, which is useful for understanding of structural transformations in the liquid state. In the present work, an impact of minor Co admixtures on the viscosity and electrical conductivity of liquid Sn-3.8Ag-0.7Cu alloy was studied. An increase in viscosity with minor Co admixtures is in a satisfactory agreement with model predicted data obtained from thermodynamic approaches and suggests a significant impact of interatomic interactions. Cobalt admixtures significantly affect the electrical conductivity, which gradually decreases with increasing the amount of Co. Additionally, the sample microstructure has been examined using x-ray diffraction and scanning electron microscopy analyses. The formation of Sn-based Co-Sn intermetallic compounds was detected in the alloys with more than 1 wt.% Co.

  12. Internal oxidation of sp-Impurities in silver studied by119Sn Mössbauer spectroscopy

    NASA Astrophysics Data System (ADS)

    Andreasen, H.; Damgaard, S.; Nielsen, H. L.; Petersen, J. W.; Weyer, G.

    1983-12-01

    The internal oxidation of the ion-implanted radioactive precursors119Cd and119Sb to the Mössbauer isotope119Sn in silver has been investigated. The oxidation is monitored by the intensity of a line in the Mössbauer spectra, which is characteristic of SnO2 (δ=(0 0.23)mm/s relative to CaSnO3, ΔEQ ≈ 0.5 mm/s, ϑ ≈ 220 K). This line is attributed to an internal oxidation of the implanted impurities by interstitially diffusing oxygen pairs. The formation and annealing kinetics of the impurity-oxygen complexes are interpreted in terms of the diffusion coefficients of oxygen and the sp-impurities in silver, respectively, and the reactivity between them. Comparison is made to Mössbauer experiments on SnAg alloys and to PAC measurements on111cd in silver.

  13. Ab initio quantum chemical studies of fullerene molecules with substitutes C59X [XSi, Ge, Sn], C59X- [XB, Al, Ga, In], and C59X [XN, P, As, Sb

    NASA Astrophysics Data System (ADS)

    Simeon, Tomekia M.; Yanov, Ilya; Leszczynski, Jerzy

    This article presents the results of systematic ab initio quantum chemical study of charged and neutral analogues of fullerene molecules: C59X[XSi, Ge, Sn], C59X- [XB, Al, Ga, In], and C59X+ [XN, P, As, Sb]. Hartree-Fock (HF) and density functional theory (DFT) levels of theory with Stuttgart-Dresden basis set were used to investigate the structure and properties of substituted fullerene molecules. A replacement of fullerene carbon atom with a heteroatom results in a unique chemical site on the fullerene surface, which may be used as a reactive center or to modify the electronic properties. We show the possibility of utilization of substituted fullerenes as atom-like building units. Heteroatom substitution allows the tuning of the physical and chemical properties of original molecule for different material science and nanotechnology applications.

  14. AsSb energetics in argentian sulfosalts

    NASA Astrophysics Data System (ADS)

    Ghosal, Subhabrata; Sack, Richard O.

    1995-09-01

    Experimental brackets on As-Sb partitioning between polybasite-pearceite {Pbp; (Cu, Ag) 16(Sb, As) 2S 11} and pyrargyrite-proustite {Ppr; (Cu, Ag) 3(Sb, As)S 3}, and between pyrargyrite-proustite, and miargyrite and smithite {αMi, βMi, Smt; Ag(Sb, As)S 2} (350-400°C; evacuated silica tubes) define standard state Gibbs energies of theAsSb exchange reactions {Ag 16As 2S 11+Ag 3SbS 3=Ag 16Sb 2S 11 + Ag 3AsS 3, Δ Gro Pbp-Ppr = 0.65 ± 0.60 kJ/gfw; Ag 3AsS 3, + AgSbS 2 = Ag 3SbS 3 + AgASS 2, Δ overlineGro Ppr-α Mi = 3.10 ± 0.50 kJ/gfw, Δ Gro PPr-Smt = 1.70 ± 0.50 kJ/gfw and the nonidealities associated with the AsSb substitutions in these minerals (measured by symmetric regular-solution parameters for formula units on a one AsSb site basis; WAsSbPbp = 4.00 ± 0.25 kJ/gfw; WAsSbPpr =6.00 ± 0 .60 kJ/gfw; WAsSbαMi = WAsSbSmt = 7.00 ± 0.50 kJ/gfw). The above constraints applied to the miscibility gap between Ag (Sb, As) S 2 solutions with α-miargyrite and smithite structures at 350°C determine the relative stabilities of these structures in the As and Sb endmembers to be: ( GSbo, α Mi - GSbo, Smt) ˜ -0.63 kJ/gfw; ( GAso, α Mi - GAsSmt) ˜ 0.77 kJ/gfw. Combining these constraints with the calorimetric data of Bryndzia and Kleppa (1988, 1989) and our melting point determinations we have constructed a phase diagram for the AgSbS 2AgAsS 2 subsystem. The salient features of this diagram are (1) eutectic behaviour ( T ˜ 396°C, XAs ˜ 0.50), (2) modest increase in the temperature of the α → β miargyrite transition with As substitution (˜380°C in Sb-subsystem; 386.6°C at XAsMi ˜ 0.36), (3) a 42.5°C depression of the trechmannite-smithite transition with preferential incorporation of Sb in smithite { smithite ( XAs ˜ 0.62) → α-miargyrite ( XAs ˜ 0.34) + trechmannite (X As ˜ 1.00) at ˜277.5°C}, and (4) widening of the miargyrite-trechmannite gap at lower temperatures. The latter feature is consistent with the inference that the most As

  15. Enthalpy Effect of Adding Cobalt to Liquid Sn-3.8Ag-0.7Cu Lead-Free Solder Alloy: Difference between Bulk and Nanosized Cobalt

    PubMed Central

    2016-01-01

    Heat effects for the addition of Co in bulk and nanosized forms into the liquid Sn-3.8Ag-0.7Cu alloy were studied using drop calorimetry at four temperatures between 673 and 1173 K. Significant differences in the heat effects between nano and bulk Co additions were observed. The considerably more exothermic values of the measured enthalpy for nano Co additions are connected with the loss of the surface enthalpy of the nanoparticles due to the elimination of the surface of the nanoparticles upon their dissolution in the liquid alloy. This effect is shown to be independent of the calorimeter temperature (it depends only on the dropping temperature through the temperature dependence of the surface energy of the nanoparticles). Integral and partial enthalpies of mixing for Co in the liquid SAC-alloy were evaluated from the experimental data. PMID:26877829

  16. Influence of nanoparticle addition on the formation and growth of intermetallic compounds (IMCs) in Cu/Sn-Ag-Cu/Cu solder joint during different thermal conditions

    NASA Astrophysics Data System (ADS)

    Tan, Ai Ting; Tan, Ai Wen; Yusof, Farazila

    2015-06-01

    Nanocomposite lead-free solders are gaining prominence as replacements for conventional lead-free solders such as Sn-Ag-Cu solder in the electronic packaging industry. They are fabricated by adding nanoparticles such as metallic and ceramic particles into conventional lead-free solder. It is reported that the addition of such nanoparticles could strengthen the solder matrix, refine the intermetallic compounds (IMCs) formed and suppress the growth of IMCs when the joint is subjected to different thermal conditions such as thermal aging and thermal cycling. In this paper, we first review the fundamental studies on the formation and growth of IMCs in lead-free solder joints. Subsequently, we discuss the effect of the addition of nanoparticles on IMC formation and their growth under several thermal conditions. Finally, an outlook on the future growth of research in the fabrication of nanocomposite solder is provided.

  17. Frequency-Dependent Low Cycle Fatigue of Sn1Ag0.1Cu(In/Ni) Solder Joints Subjected to High-Frequency Loading

    NASA Astrophysics Data System (ADS)

    Wong, E. H.; Seah, S. K. W.; Shim, V. P. W.

    2014-02-01

    The low-cycle-fatigue characteristics of solder joints, formed by reflowing Sn98.8/Ag1.0/Cu0.1/In0.05/Ni0.02 solder over electroless nickel immersion gold-plated copper pads, were investigated by dynamic cyclic bending of printed circuit boards (PCBs). The PCB strain amplitudes were varied from 1.2 × 10-3 to 2.4 × 10-3 and the flexural frequencies ranged from 30 Hz to 150 Hz, to simulate drop impact-induced PCB resonant frequencies. A trend of drastically decreasing fatigue life with cyclic frequency was observed, in contrast with previous reports indicating the reverse; this is attributed to the different failure mechanisms activated. A systematic procedure involving optimization followed by transformation was used to condense the strain-frequency-life data into a master curve expressed in strain-life space.

  18. Strong H...F hydrogen bonds as synthons in polymeric quantum magnets: structural, magnetic, and theoretical characterization of [Cu(HF2)(pyrazine)2]SbF6, [Cu2F(HF)(HF2)(pyrazine)4](SbF6)2, and [CuAg(H3F4)(pyrazine)5](SbF6)2.

    PubMed

    Manson, Jamie L; Schlueter, John A; Funk, Kylee A; Southerland, Heather I; Twamley, Brendan; Lancaster, Tom; Blundell, Stephen J; Baker, Peter J; Pratt, Francis L; Singleton, John; McDonald, Ross D; Goddard, Paul A; Sengupta, Pinaki; Batista, Cristian D; Ding, Letian; Lee, Changhoon; Whangbo, Myung-Hwan; Franke, Isabel; Cox, Susan; Baines, Chris; Trial, Derek

    2009-05-20

    Three Cu(2+)-containing coordination polymers were synthesized and characterized by experimental (X-ray diffraction, magnetic susceptibility, pulsed-field magnetization, heat capacity, and muon-spin relaxation) and electronic structure studies (quantum Monte Carlo simulations and density functional theory calculations). [Cu(HF(2))(pyz)(2)]SbF(6) (pyz = pyrazine) (1a), [Cu(2)F(HF)(HF(2))(pyz)(4)](SbF(6))(2) (1b), and [CuAg(H(3)F(4))(pyz)(5)](SbF(6))(2) (2) crystallize in either tetragonal or orthorhombic space groups; their structures consist of 2D square layers of [M(pyz)(2)](n+) that are linked in the third dimension by either HF(2)(-) (1a and 1b) or H(3)F(4)(-) (2). The resulting 3D frameworks contain charge-balancing SbF(6)(-) anions in every void. Compound 1b is a defective polymorph of 1a, with the difference being that 50% of the HF(2)(-) links are broken in the former, which leads to a cooperative Jahn-Teller distortion and d(x(2))(-y(2)) orbital ordering. Magnetic data for 1a and 1b reveal broad maxima in chi at 12.5 and 2.6 K and long-range magnetic order below 4.3 and 1.7 K, respectively, while 2 displays negligible spin interactions owing to long and disrupted superexchange pathways. The isothermal magnetization, M(B), for 1a and 1b measured at 0.5 K reveals contrasting behaviors: 1a exhibits a concave shape as B increases to a saturation field, B(c), of 37.6 T, whereas 1b presents an unusual two-step saturation in which M(B) is convex until it reaches a step near 10.8 T and then becomes concave until saturation is reached at 15.8 T. The step occurs at two-thirds of M(sat), suggesting the presence of a ferrimagnetic structure. Compound 2 shows unusual hysteresis in M(B) at low temperature, although chi vs T does not reveal the presence of a magnetic phase transition. Quantum Monte Carlo simulations based on an anisotropic cubic lattice were applied to the magnetic data of 1a to afford g = 2.14, J = -13.4 K (Cu-pyz-Cu), and J(perpendicular) = -0.20 K (Cu

  19. Strong H...F hydrogen bonds as synthons in polymeric quantum magnets: structural, magnetic, and theoretical characterization of [Cu(HF2)(pyrazine)2]SbF6, [Cu2F(HF)(HF2)(pyrazine)4](SbF6)2, and [CuAg(H3F4)(pyrazine)5](SbF6)2.

    PubMed

    Manson, Jamie L; Schlueter, John A; Funk, Kylee A; Southerland, Heather I; Twamley, Brendan; Lancaster, Tom; Blundell, Stephen J; Baker, Peter J; Pratt, Francis L; Singleton, John; McDonald, Ross D; Goddard, Paul A; Sengupta, Pinaki; Batista, Cristian D; Ding, Letian; Lee, Changhoon; Whangbo, Myung-Hwan; Franke, Isabel; Cox, Susan; Baines, Chris; Trial, Derek

    2009-05-20

    Three Cu(2+)-containing coordination polymers were synthesized and characterized by experimental (X-ray diffraction, magnetic susceptibility, pulsed-field magnetization, heat capacity, and muon-spin relaxation) and electronic structure studies (quantum Monte Carlo simulations and density functional theory calculations). [Cu(HF(2))(pyz)(2)]SbF(6) (pyz = pyrazine) (1a), [Cu(2)F(HF)(HF(2))(pyz)(4)](SbF(6))(2) (1b), and [CuAg(H(3)F(4))(pyz)(5)](SbF(6))(2) (2) crystallize in either tetragonal or orthorhombic space groups; their structures consist of 2D square layers of [M(pyz)(2)](n+) that are linked in the third dimension by either HF(2)(-) (1a and 1b) or H(3)F(4)(-) (2). The resulting 3D frameworks contain charge-balancing SbF(6)(-) anions in every void. Compound 1b is a defective polymorph of 1a, with the difference being that 50% of the HF(2)(-) links are broken in the former, which leads to a cooperative Jahn-Teller distortion and d(x(2))(-y(2)) orbital ordering. Magnetic data for 1a and 1b reveal broad maxima in chi at 12.5 and 2.6 K and long-range magnetic order below 4.3 and 1.7 K, respectively, while 2 displays negligible spin interactions owing to long and disrupted superexchange pathways. The isothermal magnetization, M(B), for 1a and 1b measured at 0.5 K reveals contrasting behaviors: 1a exhibits a concave shape as B increases to a saturation field, B(c), of 37.6 T, whereas 1b presents an unusual two-step saturation in which M(B) is convex until it reaches a step near 10.8 T and then becomes concave until saturation is reached at 15.8 T. The step occurs at two-thirds of M(sat), suggesting the presence of a ferrimagnetic structure. Compound 2 shows unusual hysteresis in M(B) at low temperature, although chi vs T does not reveal the presence of a magnetic phase transition. Quantum Monte Carlo simulations based on an anisotropic cubic lattice were applied to the magnetic data of 1a to afford g = 2.14, J = -13.4 K (Cu-pyz-Cu), and J(perpendicular) = -0.20 K (Cu

  20. Morphology and Shear Strength of Lead-Free Solder Joints with Sn3.0Ag0.5Cu Solder Paste Reinforced with Ceramic Nanoparticles

    NASA Astrophysics Data System (ADS)

    Yakymovych, A.; Plevachuk, Yu.; Švec, P.; Švec, P.; Janičkovič, D.; Šebo, P.; Beronská, N.; Roshanghias, A.; Ipser, H.

    2016-08-01

    To date, additions of different oxide nanoparticles is one of the most widespread procedures to improve the mechanical properties of metals and metal alloys. This research deals with the effect of minor ceramic nanoparticle additions (SiO2, TiO2 and ZrO2) on the microstructure and mechanical properties of Cu/solder/Cu joints. The reinforced Sn3.0Ag0.5Cu (SAC305) solder alloy with 0.5 wt.% and 1.0 wt.% of ceramic nanoparticles was prepared through mechanically stirring. The microstructure of as-solidified Cu/solder/Cu joints was studied using scanning electron microscopy. The additions of ceramic nanoparticles suppressed the growth of the intermetallic compound layer Cu6Sn5 at the interface solder/Cu and improved the microstructure of the joints. Furthermore, measurements of mechanical properties showed improved shear strength of Cu/composite solder/Cu joints compared to joints with unreinforced solder. This fact related to all investigated ceramic nanoinclusions and should be attributed to the adsorption of nanoparticles on the grain surface during solidification. However, this effect is less pronounced on increasing the nanoinclusion content from 0.5 wt.% to 1.0 wt.% due to agglomeration of nanoparticles. Moreover, a comparison analysis showed that the most beneficial influence was obtained by minor additions of SiO2 nanoparticles into the SAC305 solder alloy.

  1. Peculiarities of thermoelectric half-Heusler phase formation in Gd-Ni-Sb and Lu-Ni-Sb ternary systems

    NASA Astrophysics Data System (ADS)

    Romaka, V. V.; Romaka, L.; Horyn, A.; Rogl, P.; Stadnyk, Yu; Melnychenko, N.; Orlovskyy, M.; Krayovskyy, V.

    2016-07-01

    The phase equilibria in the Gd-Ni-Sb and Lu-Ni-Sb ternary systems were studied at 873 K by X-ray and metallographic analyses in the whole concentration range. The interaction of the elements in the Gd-Ni-Sb system results the formation of five ternary compounds at investigated temperature: Gd5Ni2Sb (Mo5SiB2-type), Gd5NiSb2 (Yb5Sb3-type), GdNiSb (MgAgAs-type), Gd3Ni6Sb5 (Y3Ni6Sb5-type), and GdNi0.72Sb2 (HfCuSi2-type). At investigated temperature the Lu-Ni-Sb system is characterized by formation of the LuNiSb (MgAgAs-type), Lu5Ni2Sb (Mo5SiB2-type), and Lu5Ni0.56Sb2.44 (Yb5Sb3-type) compounds. The disordering in the crystal structure of half-Heusler GdNiSb and LuNiSb was revealed by EPMA and studied by means of Rietveld refinement and DFT modeling. The performed electronic structure calculations are in good agreement with electrical transport property studies.

  2. Genetic Pd, Pt, Au, Ag, and Rh mineralogy in Noril'sk sulfide ores

    NASA Astrophysics Data System (ADS)

    Spiridonov, E. M.; Kulagov, E. A.; Serova, A. A.; Kulikova, I. M.; Korotaeva, N. N.; Sereda, E. V.; Tushentsova, I. N.; Belyakov, S. N.; Zhukov, N. N.

    2015-09-01

    The undeformed ore-bearing intrusions of the Noril'sk ore field (NOF) cut through volcanic rocks of the Late Permian-Early Triassic trap association folded in brachysynclines. Due to the nonuniform load on the roof of intrusive bodies, most sulfide melts were squeezed, up to the tops of ore-bearing intrusions; readily fusible Ni-Fe-Cu sulfide melts were almost completely squeezed. In our opinion, not only one but two stages of mineralization developed at the Noril'sk deposits: (i) syntrap magmatic and (ii) epigenetic post-trap metamorphic-hydrothermal. All platinum-group minerals (PGM) and minerals of gold are metasomatic in the Noril'sk ores. They replaced sulfide solid solutions and exsolution structures. All types of PGM and Au minerals occur in the ores, varying in composition from pyrrhotite to chalcopyrite, talnakhite, mooihoekite, and rich in galena; they are localized in the inner and outer contact zones and differ only in the quantitative proportions of ore minerals. The aureoles of PGM and Au-Ag minerals are wider than the contours of sulfide bodies and coincide with halos of fluid impact on orebodies and adjacent host rocks. The pneumatolytic PGM and Au-Ag minerals are correlated in abundance with the dimensions of sulfide bodies. Their amounts are maximal in veins of late fusible ore composed of eutectic PbS ss and iss intergrowths, as well as at their contacts. The Pd and Pt contents in eutectic sulfide ores of NOF are the world's highest. In the process of noble-metal mineral formation, the fluids supply Pd, Pt, Au, As, Sb, Sn, Bi, and a part of Te, whereas Fe, Ni, Cu, Pb, Ag, Rh, a part of Te and Pd are leached from the replaced sulfide minerals. The pneumatolytic PGM of the early stage comprises Pd and Pt intermetallic compounds enriched in Au along with Pd-Pt-Fe-Ni-Cu-Sn-Pb(As) and (Pd,Pt,Au)(Sn,Sb,Bi,Te,As) solid solutions. Pneumatolytic PGM and Au minerals of the middle stage are products of solid-phase transformation and recrystallization of

  3. Reliability of Sn/Pb and Lead-Free (SnAgCu) Solders of Surface Mounted Miniaturized Passive Components for Extreme Temperature (-185 C to +125 C) Space Missions

    NASA Technical Reports Server (NTRS)

    Ramesham, Rajeshuni

    2011-01-01

    Surface mount electronic package test boards have been assembled using tin/lead (Sn/Pb) and lead-free (Pb-free or SnAgCu or SAC305) solders. The soldered surface mount packages include ball grid arrays (BGA), flat packs, various sizes of passive chip components, etc. They have been optically inspected after assembly and subsequently subjected to extreme temperature thermal cycling to assess their reliability or future deep space, long-term, extreme temperature environmental missions. In this study, the employed temperature range (-185oC to +125oC) covers military specifications (-55oC to +100oC), extreme old Martian (-120oC to +115oC), asteroid Nereus (-180oC to +25oC) and JUNO (-150oC to +120oC) environments. The boards were inspected at room temperature and at various intervals as a function of extreme temperature thermal cycling and bake duration. Electrical resistance measurements made at room temperature are reported and the tests to date have shown some change in resistance as a function of extreme temperature thermal cycling and some showed increase in resistance. However, the change in interconnect resistance becomes more noticeable with increasing number of thermal cycles. Further research work will be carried out to understand the reliability of packages under extreme temperature applications (-185oC to +125oC) via continuously monitoring the daisy chain resistance for BGA, Flat-packs, lead less chip packages, etc. This paper will describe the experimental reliability results of miniaturized passive components (01005, 0201, 0402, 0603, 0805, and 1206) assembled using surface mounting processes with tin-lead and lead-free solder alloys under extreme temperature environments.

  4. Reliability of Sn/Pb and lead-free (SnAgCu) solders of surface mounted miniaturized passive components for extreme temperature (-185°C to +125°C) space missions

    NASA Astrophysics Data System (ADS)

    Ramesham, Rajeshuni

    2011-02-01

    Surface mount electronic package test boards have been assembled using tin/lead (Sn/Pb) and lead-free (Pb-free or SnAgCu or SAC305) solders. The soldered surface mount packages include ball grid arrays (BGA), flat packs, various sizes of passive chip components, etc. They have been optically inspected after assembly and subsequently subjected to extreme temperature thermal cycling to assess their reliability for future deep space, long-term, extreme temperature environmental missions. In this study, the employed temperature range (-185°C to +125°C) covers military specifications (-55°C to +100°C), extreme cold Martian (-120°C to +115°C), asteroid Nereus (-180°C to +25°C) and JUNO (-150°C to +120°C) environments. The boards were inspected at room temperature and at various intervals as a function of extreme temperature thermal cycling and bake duration. Electrical resistance measurements made at room temperature are reported and the tests to date have shown some change in resistance as a function of extreme temperature thermal cycling and some showed increase in resistance. However, the change in interconnect resistance becomes more noticeable with increasing number of thermal cycles. Further research work will be carried out to understand the reliability of packages under extreme temperature applications (-185°C to +125°C) via continuously monitoring the daisy chain resistance for BGA, Flat-packs, lead less chip packages, etc. This paper will describe the experimental reliability results of miniaturized passive components (01005, 0201, 0402, 0603, 0805, and 1206) assembled using surface mounting processes with tin-lead and lead-free solder alloys under extreme temperature environments.

  5. Anomalous creep in Sn-rich solder joints

    SciTech Connect

    Song, Ho Geon; Morris Jr., John W.; Hua, Fay

    2002-03-15

    This paper discusses the creep behavior of example Sn-rich solders that have become candidates for use in Pb-free solder joints. The specific solders discussed are Sn-3.5Ag, Sn-3Ag-0.5Cu, Sn-0.7Cu and Sn-10In-3.1Ag, used in thin joints between Cu and Ni-Au metallized pads.

  6. Effects of Rh on the thermoelectric performance of the p-type Zr{sub 0.5}Hf{sub 0.5}Co{sub 1-x}Rh{sub x}Sb{sub 0.99}Sn{sub 0.01} half-Heusler alloys

    SciTech Connect

    Maji, Pramathesh; Takas, Nathan J.; Misra, Dinesh K.; Gabrisch, Heike; Stokes, Kevin; Poudeu, Pierre F.P.

    2010-05-15

    We show that Rh substitution at the Co site in Zr{sub 0.5}Hf{sub 0.5}Co{sub 1-x}Rh{sub x}Sb{sub 0.99}Sn{sub 0.01} (0<=x<=1) half-Heusler alloys strongly reduces the thermal conductivity with a simultaneous, significant improvement of the power factor of the materials. Thermoelectric properties of hot-pressed pellets of several compositions with various Rh concentrations were investigated in the temperature range from 300 to 775 K. The Rh 'free' composition shows n-type conduction, while Rh substitution at the Co site drives the system to p-type semiconducting behavior. The lattice thermal conductivity of Zr{sub 0.5}Hf{sub 0.5}Co{sub 1-x}Rh{sub x}Sb{sub 0.99}Sn{sub 0.01} alloys rapidly decreased with increasing Rh concentration and lattice thermal conductivity as low as 3.7 W/m*K was obtained at 300 K for Zr{sub 0.5}Hf{sub 0.5}RhSb{sub 0.99}Sn{sub 0.01}. The drastic reduction of the lattice thermal conductivity is attributed to mass fluctuation induced by the Rh substitution at the Co site, as well as enhanced phonon scattering at grain boundaries due to the small grain size of the synthesized materials. - Graphical abstract: Significant reduction of the lattice thermal conductivity with increasing Rh concentration in the p-type Zr{sub 0.5}Hf{sub 0.5}Co{sub 1-x}Rh{sub x}Sb{sub 0.99}Sn{sub 0.01} half-Heusler materials prepared by solid state reaction at 1173 K.

  7. Enhancement of thermoelectric figure-of-merit at low temperatures by titanium substitution for hafnium in n-type half-Heuslers Hf0.75-xTixZr0.25NiSn0.99Sb0.01

    SciTech Connect

    Joshi, Giri; Dahal, Tulashi; Chen, Shuo; Wang, Hengzhi Z; Shiomi, Junichiro; Chen, Gang; Ren, Zhifeng F.

    2012-08-08

    The effect of titanium (Ti) substitution for hafnium (Hf) on thermoelectric properties of (Hf, Zr)-based n-type half-Heuslers: Hf0.75-xTixZr0.25NiSn0.99Sb0.01, has been studied. The samples are made by arc melting followed by ball milling and hot pressing via the nanostructuring approach. A peak thermoelectric figure-of-merit (ZT) of ~1.0 is achieved at 500 °C in samples with a composition of Hf0.5Zr0.25Ti0.25NiSn0.99Sb0.01 due to a slight increase in carrier concentration and also a lower thermal conductivity caused by Ti. TheZT values below 500 °C of hot pressed Hf0.5Zr0.25Ti0.25NiSn0.99Sb0.01 samples are significantly higher than those of the same way prepared Hf0.75Zr0.25NiSn0.99Sb0.01samples at each temperature, which are very much desired for mid-range temperature applications such as waste heat recovery in automobiles.

  8. Effect of reaction time and P content on mechanical strength of the interface formed between eutectic Sn-Ag solder and Au/electroless Ni(P)/Cu bond pad

    NASA Astrophysics Data System (ADS)

    Alam, M. O.; Chan, Y. C.; Tu, K. N.

    2003-09-01

    In this work, shear strengths of the solder joints for Sn-Ag eutectic alloy with the Au/electroless Ni(P)/Cu bond pad were measured for three different electroless Ni(P) layers. Sn-Ag eutectic solder alloy was kept in molten condition (240 °C) on the Au/electroless Ni(P)/Cu bond pad for different time periods ranging from 0.5 min to 180 min to render the ultimate interfacial reaction and the consecutive shear strength. After the shear test, fracture surfaces were investigated by scanning electron microscopy equipped with energy dispersed x ray. Cross-sectional studies of the interfaces were also conducted to correlate with the fracture surfaces. It was found that formation of crystalline phosphorous-rich Ni layer at the solder interface of Au/electroless Ni(P)/Cu bond pad with Sn-Ag eutectic alloy deteriorates the mechanical strength of the joints significantly. It was also noticed that such weak P-rich Ni layer appears quickly for high-P content electroless Ni(P) layer. However, when this P-rich Ni layer disappears from a prolonged reaction, the shear strength increases again.

  9. A rapid, partial leach and organic separation for the sensitive determination of Ag, Bi, Cd, Cu, Mo, Pb, Sb, and Zn in surface geologic materials by flame atomic absorption

    USGS Publications Warehouse

    Viets, J.G.; Clark, J.R.; Campbell, W.L.

    1984-01-01

    A solution of dilute hydrochloric acid, ascorbic acid, and potassium iodide has been found to dissolve weakly bound metals in soils, stream sediments, and oxidized rocks. Silver, Bi, Cd, Cu, Mo, Pb, Sb, and Zn are selectively extracted from this solution by a mixture of Aliquat 336 (tricaprylyl methyl ammonium chloride) and MIBK (methyl isobutyl ketone). Because potentially interfering major and minor elements do not extract, the organic separation allows interference-free determinations of Ag and Cd to the 0.05 ppm level, Mo, Cu, and Zn to 0.5 ppm, and Bi, Pb, and Sb to 1 ppm in the sample using flame atomic absorption spectroscopy. The analytical absorbance values of the organic solution used in the proposed method are generally enhanced more than threefold as compared to aqueous solutions, due to more efficient atomization and burning characteristics. The leaching and extraction procedures are extremely rapid; as many as 100 samples may be analyzed per day, yielding 800 determinations, and the technique is adaptable to field use. The proposed method was compared to total digestion methods for geochemical reference samples as well as soils and stream sediments from mineralized and unmineralized areas. The partial leach showed better anomaly contrasts than did total digestions. Because the proposed method is very rapid and is sensitive to pathfinder elements for several types of ore deposits, it should be useful for reconnaissance surveys for concealed deposits. ?? 1984.

  10. Pd-Ag Membrane Coupled to a Two-Zone Fluidized Bed Reactor (TZFBR) for Propane Dehydrogenation on a Pt-Sn/MgAl2O4 Catalyst

    PubMed Central

    Medrano, José-Antonio; Julián, Ignacio; Herguido, Javier; Menéndez, Miguel

    2013-01-01

    Several reactor configurations have been tested for catalytic propane dehydrogenation employing Pt-Sn/MgAl2O4 as a catalyst. Pd-Ag alloy membranes coupled to the multifunctional Two-Zone Fluidized Bed Reactor (TZFBR) provide an improvement in propane conversion by hydrogen removal from the reaction bed through the inorganic membrane in addition to in situ catalyst regeneration. Twofold process intensification is thereby achieved when compared to the use of traditional fluidized bed reactors (FBR), where coke formation and thermodynamic equilibrium represent important process limitations. Experiments were carried out at 500–575 °C and with catalyst mass to molar flow of fed propane ratios between 15.1 and 35.2 g min mmol−1, employing three different reactor configurations: FBR, TZFBR and TZFBR + Membrane (TZFBR + MB). The results in the FBR showed catalyst deactivation, which was faster at high temperatures. In contrast, by employing the TZFBR with the optimum regenerative agent flow (diluted oxygen), the process activity was sustained throughout the time on stream. The TZFBR + MB showed promising results in catalytic propane dehydrogenation, displacing the reaction towards higher propylene production and giving the best results among the different reactor configurations studied. Furthermore, the results obtained in this study were better than those reported on conventional reactors. PMID:24958620

  11. Pd-Ag Membrane Coupled to a Two-Zone Fluidized Bed Reactor (TZFBR) for Propane Dehydrogenation on a Pt-Sn/MgAl2O4 Catalyst.

    PubMed

    Medrano, José-Antonio; Julián, Ignacio; Herguido, Javier; Menéndez, Miguel

    2013-01-01

    Several reactor configurations have been tested for catalytic propane dehydrogenation employing Pt-Sn/MgAl2O4 as a catalyst. Pd-Ag alloy membranes coupled to the multifunctional Two-Zone Fluidized Bed Reactor (TZFBR) provide an improvement in propane conversion by hydrogen removal from the reaction bed through the inorganic membrane in addition to in situ catalyst regeneration. Twofold process intensification is thereby achieved when compared to the use of traditional fluidized bed reactors (FBR), where coke formation and thermodynamic equilibrium represent important process limitations. Experiments were carried out at 500-575 °C and with catalyst mass to molar flow of fed propane ratios between 15.1 and 35.2 g min mmol-1, employing three different reactor configurations: FBR, TZFBR and TZFBR + Membrane (TZFBR + MB). The results in the FBR showed catalyst deactivation, which was faster at high temperatures. In contrast, by employing the TZFBR with the optimum regenerative agent flow (diluted oxygen), the process activity was sustained throughout the time on stream. The TZFBR + MB showed promising results in catalytic propane dehydrogenation, displacing the reaction towards higher propylene production and giving the best results among the different reactor configurations studied. Furthermore, the results obtained in this study were better than those reported on conventional reactors. PMID:24958620

  12. Refinement of the Microstructure of Sn-Ag-Bi-In Solder, by Addition of SiC Nanoparticles, to Reduce Electromigration Damage Under High Electric Current

    NASA Astrophysics Data System (ADS)

    Kim, Youngseok; Nagao, Shijo; Sugahara, Tohru; Suganuma, Katsuaki; Ueshima, Minoru; Albrecht, Hans-Juergen; Wilke, Klaus; Strogies, Joerg

    2014-12-01

    The trends of miniaturization, multi-functionality, and high performance in advanced electronic devices require higher densities of I/O gates and reduced area of soldering of interconnections. This increases the electric current density flowing through the interconnections, increasing the risk of interconnection failure caused by electromigration (EM). Accelerated directional atomic diffusion in solder materials under high current induces substantial growth of intermetallic compounds (IMCs) at the anode, and also void and crack formation at the cathode. In the work discussed in this paper, addition of SiC nanoparticles to Sn-Ag-Bi-In (SABI) lead-free solder refined its microstructure and improved its EM reliability under high current stress. Electron backscattering diffraction analysis revealed that the added SiC nanoparticles refined solder grain size after typical reflow. Under current stress, SABI joints with added nano-SiC had lifetimes almost twice as long as those without. Comparison of results from high-temperature aging revealed direct current affected evolution of the microstructure. Observations of IMC growth indicated that diffusion of Cu in the SiC composite solder may not have been reduced. During current flow, however, only narrow voids were formed in solder containing SiC, thus preventing the current crowding caused by bulky voids in the solder without SiC.

  13. Effect of Thermal Aging on the Mechanical Properties of Sn3.0Ag0.5Cu/Cu Solder Joints Under High Strain Rate Conditions

    NASA Astrophysics Data System (ADS)

    Nguyen, Van Luong; Kim, Ho-Kyung

    2015-07-01

    Shear tests with velocities between 0.5 m/s and 2.5 m/s were conducted to investigate the deformation characteristics of 0.76 mm lead-free Sn-3Ag-0.5Cu solder ball joints after thermal aging at 373 K up to 1000 h. A scanning electron microscope equipped with energy dispersive spectroscopy was then used to examine the fracture surfaces and microstructures of the solder joints. The results showed that the main failure mode of the solder joints was the brittle interfacial fracture mode with cleavage failure in the intermetallic compound (IMC). The maximum shear strength and the fracture toughness ( K C) of the solder joint decreased substantially after aging for the initial aging time, after which they decreased gradually with further aging or an increase in the strain rate. The evolution of the IMC layer when it was thicker and had coarser nodules due to thermal aging was the primary cause of the reduction in the shear strength and fracture toughness in this study.

  14. Effect of Electromigration on the Type of Drop Failure of Sn-3.0Ag-0.5Cu Solder Joints in PBGA Packages

    NASA Astrophysics Data System (ADS)

    Huang, M. L.; Zhao, N.

    2015-10-01

    Board-level drop tests of plastic ball grid array (PBGA) packages were performed in accordance with the Joint Electron Devices Engineering Council standard to investigate the effect of electromigration (EM) on the drop reliability of Sn-3.0Ag-0.5Cu solder joints with two substrate surface finishes, organic solderability preservative (OSP) and electroless nickel electroless palladium immersion gold (ENEPIG). In the as-soldered state, drop failures occurred at the substrate sides only, with cracks propagating within the interfacial intermetallic compound (IMC) layer for OSP solder joints and along the IMC/Ni-P interface for ENEPIG solder joints. The drop lifetime of OSP solder joints was approximately twice that of ENEPIG joints. EM had an important effect on crack formation and drop lifetime of the PBGA solder joints. ENEPIG solder joints performed better in drop reliability tests after EM, that is, the drop lifetime of ENEPIG joints decreased by 43% whereas that of OSP solder joints decreased by 91%, compared with the as-soldered cases. The more serious polarity effect, i.e., excessive growth of the interfacial IMC at the anode, was responsible for the sharper decrease in drop lifetime. The different types of drop failure of PBGA solder joints before and after EM, including the position of initiation and the propagation path of cracks, are discussed on the basis of the growth behavior of interfacial IMC.

  15. Incorporating the Johnson-Cook Constitutive Model and a Soft Computational Approach for Predicting the High-Temperature Flow Behavior of Sn-5Sb Solder Alloy: A Comparative Study for Processing Map Development

    NASA Astrophysics Data System (ADS)

    Vafaeenezhad, H.; Seyedein, S. H.; Aboutalebi, M. R.; Eivani, A. R.

    2016-09-01

    The high-temperature flow behavior of Sn-5Sb lead-free solder alloy has been investigated using isothermal hot compression experiments at 298 K to 400 K and strain rate between 0.0005 s-1 and 0.01 s-1. The flow stress under these test conditions was modeled using constitutive equations based on the Johnson-Cook (J-C) model and an artificial neural network (ANN). Three input factors, i.e., temperature, strain rate, and true strain, were incorporated into the network, and the flow stress was considered as the system output. One hidden layer was adopted in the simulations. Furthermore, a comparative study was carried out on the potential of the two proposed models to characterize the high-temperature flow behavior of this alloy. The capability of the models was assessed by comparing the simulation predictions using a correlation coefficient (R 2). The stresses predicted by both models presented good agreement with experimental results. In addition, it was found that the ANN model could predict the high-temperature deformation more precisely over the whole temperature and strain rate ranges. However, this is strongly dependent on the availability of extensive, high-quality data and characteristic variables.

  16. Uptake and translocation of metals and nutrients in tomato grown in soil polluted with metal oxide (CeO₂, Fe₃O₄, SnO₂, TiO₂) or metallic (Ag, Co, Ni) engineered nanoparticles.

    PubMed

    Vittori Antisari, Livia; Carbone, Serena; Gatti, Antonietta; Vianello, Gilmo; Nannipieri, Paolo

    2015-02-01

    The influence of exposure to engineered nanoparticles (NPs) was studied in tomato plants, grown in a soil and peat mixture and irrigated with metal oxides (CeO2, Fe3O4, SnO2, TiO2) and metallic (Ag, Co, Ni) NPs. The morphological parameters of the tomato organs, the amount of component metals taken up by the tomato plants from NPs added to the soil and the nutrient content in different tomato organs were also investigated. The fate, transport and possible toxicity of different NPs and nutrients in tomato tissues from soils were determined by inductively coupled plasma-optical emission spectrometry (ICP-OES). The tomato yield depended on the NPs: Fe3O4-NPs promoted the root growth, while SnO2-NP exposure reduced it (i.e. +152.6 and -63.1 % of dry matter, respectively). The NP component metal mainly accumulated in the tomato roots; however, plants treated with Ag-, Co- and Ni-NPs showed higher concentration of these elements in both above-ground and below-ground organs with respect to the untreated plants, in addition Ag-NPs also contaminated the fruits. Moreover, an imbalance of K translocation was detected in some plants exposed to Ag-, Co- and Fe3O4-NPs. The component metal concentration of soil rhizosphere polluted with NPs significantly increased compared to controls, and NPs were detected in the tissues of the tomato roots using electron microscopy (ESEM-EDS).

  17. Depletion and phase transformation of a submicron Ni(P) film in the early stage of soldering reaction between Sn-Ag-Cu and Au/Pd(P)/Ni(P)/Cu

    NASA Astrophysics Data System (ADS)

    Ho, Cheng-En; Hsieh, Wan-Zhen; Yang, Tsung-Hsun

    2015-01-01

    The early stage of soldering reaction between Sn-3Ag-0.5Cu solder and ultrathin-Ni(P)-type Au/Pd(P)/Ni(P)/Cu pad was investigated by field-emission scanning electron microscopy (FE-SEM) in conjunction with field-emission electron probe microanalysis (FEEPMA) and high-resolution transmission electron microscopy (HRTEM). FE-SEM, FE-EPMA, and HRTEM investigations showed that Ni2SnP and Ni3P were the predominant P-containing intermetallic compounds (IMCs) in the soldering reaction and that their growth behaviors strongly depended on the depletion of Ni(P). The growth of Ni3P dominated over that of Ni2SnP in the early stage of soldering, whereas the Ni3P gradually transformed into Ni2SnP after Ni(P) depletion. This Ni(P)-depletion-induced Ni2SnP growth behavior is different from the reaction mechanisms reported in the literature. Detailed analyses of the microstructural evolution of the IMC during Ni(P) depletion were conducted, and a two-stage reaction mechanism was proposed to rationalize the unique IMC growth behavior.

  18. [Thermal expansion of Au-Pd-Ag system alloys. Casting stress and deformation of addition of Sn and In].

    PubMed

    Ohkuma, K

    1989-03-01

    To study the dimensional changes due to the release of casting stress in metal-ceramic alloys, a wheel-like pattern in which casting stress is liable to occur and rod- and barrel-like wax patterns in which the likelihood of such stress is low, were investigated with a phosphate-bonded investment compound. Furthermore, simultaneous casting was done using Au-Pd-Ag system alloys, 21 types of mother alloys and alloys with tin or indium or both, and accurate determinations of the thermal expansion rate with increased or decreased temperature were carried out. The results obtained were as follows. The mean thermal expansion rates of the mother alloys and the alloys with tin and indium upon increase and decrease of temperature were lowest for the large wheel-like pattern, followed by the small wheel-like pattern, rod-like pattern and barrel-like pattern, in that order. The mean thermal expansion rates of the mother alloys and the alloys with tin or indium or both were decreased when the palladium content was increased, but tended to increase when the silver content was higher. Gold had no influence on the thermal expansion rate. When the temperature decreased, the complex addition of tin and indium provided alloys showing only a slight deformation. PMID:2690394

  19. Thermoelectric performance enhancement of Mg2Sn based solid solutions by band convergence and phonon scattering via Pb and Si/Ge substitution for Sn.

    PubMed

    Mao, Jun; Wang, Yumei; Ge, Binghui; Jie, Qing; Liu, Zihang; Saparamadu, Udara; Liu, Weishu; Ren, Zhifeng

    2016-07-27

    In this study, the thermoelectric properties of Mg2Sn0.98-xPbxSb0.02 were first studied, and then Mg2Sn0.93-xSixPb0.05Sb0.02 and Mg2Sn0.93-xGexPb0.05Sb0.02 were accordingly investigated. The results showed that the formation of Mg2Sn0.98-xPbxSb0.02 solid solutions effectively reduced the lattice thermal conductivity of Mg2Sn. The room temperature lattice thermal conductivity of Mg2Sn0.98Sb0.02 is ∼5.2 W m(-1) K(-1) but only ∼2.5 W m(-1) K(-1) for Mg2Sn0.73Pb0.25Sb0.02, a reduction of ∼52%. Further alloying Mg2Sn0.98-xPbxSb0.02 with Mg2Si or Mg2Ge to form Mg2Sn0.93-xSixPb0.05Sb0.02 or Mg2Sn0.93-xGexPb0.05Sb0.02 reduced the lattice thermal conductivity significantly due to enhanced phonon scattering by point defects as well as nanoparticles. Moreover, bipolar thermal conductivities were suppressed due to the larger bandgap of Mg2Si and Mg2Ge than Mg2Sn. Furthermore, similar to the pseudo-binary Mg2Sn-Mg2Si and Mg2Sn-Mg2Ge systems, band convergence was also observed in pseudo-ternary Mg2Sn0.93-xSixPb0.05Sb0.02 and Mg2Sn0.93-xGexPb0.05Sb0.02 materials. The convergence of conduction bands led to higher PFs at lower temperatures for Mg2Sn0.93-xSixPb0.05Sb0.02 and Mg2Sn0.93-xGexPb0.05Sb0.02 materials. As a result, higher peak ZTs of ∼1.3 for Mg2Sn0.63Si0.3Pb0.05Sb0.02 and ∼1.2 for Mg2Sn0.68Ge0.25Pb0.05Sb0.02 were achieved. PMID:27412367

  20. Contact resistivities of antimony-doped n-type Ge1‑x Sn x

    NASA Astrophysics Data System (ADS)

    Senthil Srinivasan, V. S.; Fischer, Inga A.; Augel, Lion; Hornung, Anja; Koerner, Roman; Kostecki, Konrad; Oehme, Michael; Rolseth, Erlend; Schulze, Joerg

    2016-08-01

    As Ge1‑x Sn x is being investigated for CMOS applications, obtaining contacts to n-type Ge1‑x Sn x with low specific contact resistivity (ρ c) is a major concern. Here, we present results on specific contact resistivities of Sb doped n-type Ge1‑x Sn x with 0 ≤ x ≤ 0.08 also with varying doping concentrations using Ni, Ag and Mn as contact metals. Our results show that Ni offers the lowest ρ c for all x values of Ge1‑x Sn x . The lowest ρ c measured for Ni contacts on highly n-doped Ge0.92Sn0.08 is 2.29 × 10‑6 Ω cm2. We find a strong dependence of the specific contact resistivity on doping, which we attribute to the fact that strong Fermi level pinning is present in metal/n-Ge1‑x Sn x contacts.

  1. Hierarchical ZnO Nanowires-loaded Sb-doped SnO2-ZnO Micrograting Pattern via Direct Imprinting-assisted Hydrothermal Growth and Its Selective Detection of Acetone Molecules

    NASA Astrophysics Data System (ADS)

    Choi, Hak-Jong; Choi, Seon-Jin; Choo, Soyoung; Kim, Il-Doo; Lee, Heon

    2016-01-01

    We propose a novel synthetic route by combining imprinting transfer of a Sb-doped SnO2 (ATO)-ZnO composite micrograting pattern (MP), i.e., microstrip lines, on a sensor substrate and subsequent hydrothermal growth of ZnO nanowires (NWs) for producing a hierarchical ZnO NW-loaded ATO-ZnO MP as an improved chemo-resistive sensing layer. Here, ATO-ZnO MP structure with 3-μm line width, 9-μm pitch, and 6-μm height was fabricated by direct transfer of mixed ATO and ZnO nanoparticle (NP)-dispersed resists, which are pre-patterned on a polydimethylsiloxane (PDMS) mold. ZnO NWs with an average diameter of less than 50 nm and a height of 250 nm were quasi-vertically grown on the ATO-ZnO MP, leading to markedly enhanced surface area and heterojunction composites between each ATO NP, ZnO NP, and ZnO NW. A ZnO NW-loaded MP sensor with a relative ratio of 1:9 between ATO and ZnO (1:9 ATO-ZnO), exhibited highly sensitive and selective acetone sensing performance with 2.84-fold higher response (Rair/Rgas = 12.8) compared to that (Rair/Rgas = 4.5) of pristine 1:9 ATO-ZnO MP sensor at 5 ppm. Our results demonstrate the processing advantages of direct imprinting-assisted hydrothermal growth for large-scale homogeneous coating of hierarchical oxide layers, particularly for applications in highly sensitive and selective chemical sensors.

  2. Hierarchical ZnO Nanowires-loaded Sb-doped SnO2-ZnO Micrograting Pattern via Direct Imprinting-assisted Hydrothermal Growth and Its Selective Detection of Acetone Molecules

    PubMed Central

    Choi, Hak-Jong; Choi, Seon-Jin; Choo, Soyoung; Kim, Il-Doo; Lee, Heon

    2016-01-01

    We propose a novel synthetic route by combining imprinting transfer of a Sb-doped SnO2 (ATO)-ZnO composite micrograting pattern (MP), i.e., microstrip lines, on a sensor substrate and subsequent hydrothermal growth of ZnO nanowires (NWs) for producing a hierarchical ZnO NW-loaded ATO-ZnO MP as an improved chemo-resistive sensing layer. Here, ATO-ZnO MP structure with 3-μm line width, 9-μm pitch, and 6-μm height was fabricated by direct transfer of mixed ATO and ZnO nanoparticle (NP)-dispersed resists, which are pre-patterned on a polydimethylsiloxane (PDMS) mold. ZnO NWs with an average diameter of less than 50 nm and a height of 250 nm were quasi-vertically grown on the ATO-ZnO MP, leading to markedly enhanced surface area and heterojunction composites between each ATO NP, ZnO NP, and ZnO NW. A ZnO NW-loaded MP sensor with a relative ratio of 1:9 between ATO and ZnO (1:9 ATO-ZnO), exhibited highly sensitive and selective acetone sensing performance with 2.84-fold higher response (Rair/Rgas = 12.8) compared to that (Rair/Rgas = 4.5) of pristine 1:9 ATO-ZnO MP sensor at 5 ppm. Our results demonstrate the processing advantages of direct imprinting-assisted hydrothermal growth for large-scale homogeneous coating of hierarchical oxide layers, particularly for applications in highly sensitive and selective chemical sensors. PMID:26743814

  3. Crystal Chemistry of the New Families of Interstitial Compounds R6Mg23C (R = La, Ce, Pr, Nd, Sm, or Gd) and Ce6Mg23Z (Z = C, Si, Ge, Sn, Pb, P, As, or Sb).

    PubMed

    Wrubl, Federico; Manfrinetti, Pietro; Pani, Marcella; Solokha, Pavlo; Saccone, Adriana

    2016-01-01

    The crystal chemical features of the new series of compounds R6Mg23C with R = La-Sm or Gd and Ce6Mg23Z with Z = C, Si, Ge, Sn, Pb, P, As, or Sb have been studied by means of single-crystal and powder X-ray diffraction techniques. All phases crystallize with the cubic Zr6Zn23Si prototype (cF120, space group Fm3̅m, Z = 4), a filled variant of the Th6Mn23 structure. While no Th6Mn23-type binary rare earth-magnesium compound is known to exist, the addition of a third element Z (only 3 atom %), located into the octahedral cavity of the Th6Mn23 cell (Wyckoff site 4a), stabilizes this structural arrangement and makes possible the formation of the ternary R6Mg23Z compounds. The results of both structural and topological analyses as well as of LMTO electronic structure calculations show that the interstitial element plays a crucial role in the stability of these phases, forming a strongly bonded [R6Z] octahedral moiety spaced by zeolite cage-like [Mg45] clusters. Considering these two building units, the crystal structure of these apparently complex intermetallics can be simplified to the NaCl-type topology. Moreover, a structural relationship between RMg3 and R6Mg23C compounds has been unveiled; the latter can be described as substitutional derivatives of the former. The geometrical distortions and the consequent symmetry reduction that accompany this transformation are explicitly described by means of the Bärnighausen formalism within group theory.

  4. Effect of Cooling Rate on the Microstructure and Mechanical Properties of Sn-1.0Ag-0.5Cu-0.2BaTiO3 Composite Solder

    NASA Astrophysics Data System (ADS)

    Yang, Li; Ge, Jinguo; Liu, Haixiang; Xu, Liufeng; Bo, Anbing

    2015-11-01

    The microstructure, interfacial intermetallic compound (IMC) layer, microhardness, tensile properties, and fracture surfaces of Sn-1.0Ag-0.5Cu-0.2BaTiO3 composite solder were explored under three different cooling conditions (water-, air-, and furnace-cooled) during solidification. The average grain size was refined and the volume fraction of primary β-Sn dendrites increased with increasing cooling rate. The thickness of the IMC layer increased as the cooling rate was decreased, and the morphology also transformed from scallop shaped, for a rapid cooling rate, to irregular shaped for slower cooling; a Cu3Sn IMC layer was detected between the Cu6Sn5 IMC and copper substrate under the furnace-cooled condition, but not in water- or air-cooled specimens. The mechanical properties, including the microhardness and tensile properties, improved with rapid solidification due to the combined effects of grain refinement and a secondary strengthening mechanism. Fracture surfaces after tensile tests showed that the amount of dimples decreased and a cleavage-like pattern increased as the cooling rate was decreased from the water-cooled to furnace-cooled condition, so the fracture process transformed from ductile to mixed-mode fracture. A refined microstructure and excellent mechanical properties were obtained for the rapidly cooled sample.

  5. Low-Temperature Bonding of Bi0.5Sb1.5Te3 Thermoelectric Material with Cu Electrodes Using a Thin-Film In Interlayer

    NASA Astrophysics Data System (ADS)

    Lin, Yan-Cheng; Yang, Chung-Lin; Huang, Jing-Yi; Jain, Chao-Chi; Hwang, Jen-Dong; Chu, Hsu-Shen; Chen, Sheng-Chi; Chuang, Tung-Han

    2016-09-01

    A Bi0.5Sb1.5Te3 thermoelectric material electroplated with a Ni barrier layer and a Ag reaction layer was bonded with a Ag-coated Cu electrode at low temperatures of 448 K (175 °C) to 523 K (250 °C) using a 4- μm-thick In interlayer under an external pressure of 3 MPa. During the bonding process, the In thin film reacted with the Ag layer to form a double layer of Ag3In and Ag2In intermetallic compounds. No reaction occurred at the Bi0.5Sb1.5Te3/Ni interface, which resulted in low bonding strengths of about 3.2 MPa. The adhesion of the Bi0.5Sb1.5Te3/Ni interface was improved by precoating a 1- μm Sn film on the surface of the thermoelectric element and preheating it at 523 K (250 °C) for 3 minutes. In this case, the bonding strengths increased to a range of 9.1 to 11.5 MPa after bonding at 473 K (200 °C) for 5 to 60 minutes, and the shear-tested specimens fractured with cleavage characteristics in the interior of the thermoelectric material. The bonding at 448 K (175 °C) led to shear strengths ranging from 7.1 to 8.5 MPa for various bonding times between 5 and 60 minutes, which were further increased to the values of 10.4 to 11.7 MPa by increasing the bonding pressure to 9.8 MPa. The shear strengths of Bi0.5Sb1.5Te3/Cu joints bonded with the optimized conditions of the modified solid-liquid interdiffusion bonding process changed only slightly after long-term exposure at 473 K (200 °C) for 1000 hours.

  6. Thermal stability of Ag, Al, Sn, Pb, and Hg films reinforced by 2D (C, Si) crystals and the formation of interfacial fluid states in them upon heating. MD experiment

    NASA Astrophysics Data System (ADS)

    Polukhin, V. A.; Kurbanova, E. D.

    2016-02-01

    Molecular dynamics simulation is used to study the thermal stability of the interfacial states of metallic Al, Ag, Sn, Pb, and Hg films (i.e., the structural elements of superconductor composites and conducting electrodes) reinforced by 2D graphene and silicene crystals upon heating up to disordering and to analyze the formation of nonautonomous fluid pseudophases in interfaces. The effect of perforation defects in reinforcing 2D-C and 2D-Si planes with passivated edge covalent bonds on the atomic dynamics is investigated. As compared to Al and Ag, the diffusion coefficients in Pd and Hg films increase monotonically with temperature during thermally activated disordering processes, the interatomic distances decrease, the sizes decrease, drops form, and their density profile grows along the normal. The coagulation of Pb and Hg drops is accompanied by a decrease in the contact angle, the reduction of the interface contact with graphene, and the enhancement of its corrugation (waviness).

  7. As, Bi, Hg, S, Sb, Sn and Te geochemistry of the J-M Reef, Stillwater Complex, Montana: constraints on the origin of PGE-enriched sulfides in layered intrusions

    USGS Publications Warehouse

    Zientek, M.L.; Fries, T.L.; Vian, R.W.

    1990-01-01

    The J-M Reef is an interval of disseminated sulfides in the Lower Banded series of the Stillwater Complex that is enriched in the platinum group elements (PGE). Palladium and Pt occur in solid solution in base-metal sulfides and as discrete PGE minerals. PGE minerals include sulfides, tellurides, arsenides, antimonides, bismuthides, and alloys with Fe, Sn, Hg, and Au. Several subpopulations can be delineated based on whole-rock chemical analyses for As, Bi, Cu, Hg, Pd, Pt, S, Sb and Te for samples collected from and adjacent to the J-M Reef. In general, samples from within the reef have higher Pt/Cu, Pd/Cu, Pd/Pt, Te/Bi and S/(Te+Bi) than those collected adjacent to the reef. Vertical compositional profiles through the reef suggest that Pd/Cu and Pt/Cu decrease systematically upsection from mineralized to barren rock. The majority of samples with elevated As, Sb and Hg occur adjacent to the reef, not within it, or in sulfide-poor rocks. Neither magma mixing nor fluid migration models readily explain why the minor quantities of sulfide minerals immediately adjacent to the sulfide-enriched layers that form the J-M Reef have different element ratios than the sulfide minerals that form the reef. If all the sulfides formed by exsolution during a magma mixing event and the modal proportion of sulfide now in the rocks are simply the result of mechanical processes that concentrated the sulfides into some layers and not others, then the composition of the sulfide would not be expected to be different. Models that rely upon ascending liquids or fluids are incompatible with the presence of sulfides that are not enriched in PGE immediately below or interlayered with the PGE-enriched sulfides layers. PGE-enriched postcumulus fluids should have reacted to the same extent with sulfides immediately outside the reef as within the reef. One explanation is that some of the sulfide minerals in the rocks outside the reef have a different origin than those that make up the reef. The

  8. A first-principles study on the negative thermal expansion material: Mn3(A0.5B0.5)N (A=Cu, Zn, Ag, or Cd; B=Si, Ge, or Sn)

    NASA Astrophysics Data System (ADS)

    Qu, Bingyan; He, Haiyan; Pan, Bicai

    2016-07-01

    In this paper, using the first-principles calculations, we systemically study the magnetic and the negative thermal expansion (NTE) properties of Mn3(A0.5B0.5)N (A = Cu, Zn, Ag, or Cd; B = Si, Ge, or Sn). From the calculated results, except Mn3(Cu0.5Si0.5)N, all the doped compounds considered would exhibit the NTE. For the dopants at B sites, the working temperature of the NTE shifts to higher temperature range from Si to Sn, and among the compounds with these dopants, Mn3(A0.5Ge0.5)N has the largest amplitude of the NTE coefficient. As to the dopants at A sites, compared to Mn3(Cu0.5B0.5)N, Mn3(A0.5B0.5)N (A = Ag or Cd) exhibit the NTE with higher temperature ranges and lower coefficient of the thermal expansion. In a word, these compounds would have different working temperatures and coefficients of the NTE, which is important for the applications in different conditions.

  9. Onset of itinerant ferromagnetism associated with semiconductor-metal transition in TixNb1-xCoSn half Heusler solid solution com- pounds

    NASA Astrophysics Data System (ADS)

    Kouacou, M. A.; Koua, A. A.; Zoueu, J. T.; Konan, K.; Pierre, J.

    2008-07-01

    In this paper, the magnetic and transport properties of the Ti_{x}Nb_{1-x}CoSn solid solution compounds with half Heusler cubic MgAgAs-type structure have been studied. This work shows the onset of ferromagnetism associated with a semiconductor to metal transition. The transition occurs directly from ferromagnetic metal to semiconducting state as it is the case in the TiCo_{x}Ni_{1-x}Sn series studied previously. A weak quantity of Ti in NbCoSn is sufficient to allow the appearance of ferromagnetic order and metallic state. The variations of the Curie temperature as a function of saturation and effective paramagnetic moments are related to the itinerant ferromagnetism model. A comparison is made with the TiCoSn_{x}Sb_{1-x} series (also studied previously), where the transition from TiCoSn ferromagnetic metal to non-magnetic semiconductor TiCoSb occurs through an intermediate metallic Pauli-like state.

  10. Low-energy electromagnetic excitation strengths in 121Sb and 123Sb

    NASA Astrophysics Data System (ADS)

    Bryssinck, J.; Govor, L.; Bauwens, F.; Belic, D.; von Brentano, P.; de Frenne, D.; Fransen, C.; Gade, A.; Jacobs, E.; Kneissl, U.; Kohstall, C.; Linnemann, A.; Nord, A.; Pietralla, N.; Pitz, H. H.; Scheck, M.; Stedile, F.; Werner, V.

    2002-02-01

    Results are presented from nuclear resonance fluorescence experiments on the odd-mass nuclei 121Sb and 123Sb with Z=51. The improved sensitivity reached with the present NRF facility, installed at the 4.3 MV Dynamitron accelerator of the Stuttgart University, allowed the detection of huge numbers of weak photoexcitations in the stable Sb nuclei 121Sb (164 transitions) and 123Sb (83 transitions) in the energy range up to 4 MeV and 3.5 MeV, respectively. The data are compared to former results for odd-mass nuclei near the Z=50 and N=82 shell closures (117Sn, 139La, 141Pr, and 143Nd). In the odd-mass nuclei within the Z=50 region, a similar total amount of electromagnetic excitation strength below 4 MeV is found; however, in 121Sb and 123Sb (Z=51) this strength is much more fragmented than in 117Sn with a closed proton shell (Z=50).

  11. Interfacial Reaction Between Sn3.0Ag0.5Cu Solder and ENEPIG for Fine Pitch BGA by Stencil Printing

    NASA Astrophysics Data System (ADS)

    Liu, Ziyu; Cai, Jian; Wang, Qian; He, Xi; Chen, Yu

    2014-09-01

    In this work, solder balls in ball grid array packaging technology with the pitch of 300 μm were fabricated by stencil printing solder paste and then reflowed at high temperature. In order to evaluate the quality of solder ball after printing and reflowing processes, the mechanical performance of the joint between the solder balls and the pad was measured by shear test and the electrical resistance was tested after assembly of the substrate and printed circuit board. A comparative study of pad size on the interfacial reaction between solder paste and surface finish of electroless nickel-electroless palladium-immersion gold on the organic substrate was performed and then analyzed by observing the microstructure at the interface. Large discontinuous (Cu,Ni)6Sn5 was found at the interface of the solder with the pad size of 120 μm, while spalled (Pd,Ni)Sn4 and thin (Cu,Ni)6Sn5 layer appeared for a pad size of 140 μm. The IMC (intermetallic compounds) was determined by the residual Cu concentration, the Pd concentration in the solder, and the Ni2SnP barrier layer morphology at the interface, which were significantly influenced by the pad size. A reaction model during the reflow was proposed to illustrate the growth of the IMC and the relationship between the IMC and the pad size. With Pd concentration higher than the solubility of Pd in the solder, spalled (Pd,Ni)Sn4 took shape along the interface. The solubility of Pd was influenced by Ni concentration; however, the Ni diffusion from the substrate was largely dependent on the barrier layer Ni2SnP. Furthermore, the Ni diffusion also impacted the growth and morphology of (Cu,Ni)6Sn5, which was not only limited by the Cu concentration.

  12. Regional atmospheric deposition patterns of Ag, As, Bi, Cd, Hg, Mo, Sb and Tl in a 188,000 km 2 area in the European arctic as displayed by terrestrial moss samples-long-range atmospheric transport vs local impact

    NASA Astrophysics Data System (ADS)

    Reimann, Clemens; De Caritat, Patrice; Halleraker, Jo H.; Finne, Tor Erik; Boyd, Rognvald; Jæger, Øystein; Volden, Tore; Kashulina, Galina; Bogatyrev, Igor; Chekushin, Viktor; Pavlov, Vladimir; Äyräs, Matti; Räisänen, Marja Liisa; Niskavaara, Heikki

    The regional atmospheric deposition patterns of Ag, As, Bi, Cd, Hg, Mo, Sb and Tl have been mapped in a 188,000 km2 area of the European Arctic (N Finland, N Norway, NW Russia) using the moss technique. The Russian nickel mining and smelting industry (Nikel and Zapoljarnij (Pechenganikel) and Monchegorsk (Severonikel)) in the eastern part of the survey area represents two of the largest point sources for S0 2 and metal emissions on a world wide basis. In contrast, parts of northern Finland and northern Norway represent still some of the most pristine areas in Europe. The terrestrial mosses Hylocomium splendens and Pleurozium schreberi were used as monitors of airborne deposition. Samples in all three countries were collected during the summer of 1995 and analysed in one laboratory using ICP-MS. Maps for most elements clearly show elevated element concentrations near the industrial sites and delineate the extent of contamination. Pollution follows the main wind and topographical directions in the area (N-S). The gradients of deposition are rather steep. Background levels for all the elements are reached within 150-200 km from the industrial plants. The relative importance of long-range atmospheric transport of air pollutants from industrial point sources on the world wide increase of heavy metals observed in the atmosphere is thus debatable for many elements. Increasing population and traffic density, accompanied by increasing local dust levels, may play a much more important role than industrial emissions. The regional distribution patterns as displayed in the maps show some striking differences between the elements. The regional distribution of Hg and TI in the survey area is completely dominated by sources other than industry.

  13. Fiber-optic ammonia sensor using Ag/SnO(2) thin films: optimization of thickness of SnO(2) film using electric field distribution and reaction factor.

    PubMed

    Pathak, Anisha; Mishra, Satyendra K; Gupta, Banshi D

    2015-10-10

    A highly sensitive ammonia gas sensor exploiting the gas sensing characteristics of tin oxide (SnO2) has been reported. The methodology of the sensor is based on the phenomenon of surface plasmon resonance (SPR) with a fiber-optic probe consisting of coatings of silver as a plasmonic material and SnO2 as the sensing layer. The sensing principle relies on the change in refractive index of SnO2 upon its reaction with ammonia gas. The capability of the sensor has been tested for a 10 to 100 ppm concentration range of ammonia gas. To enhance the sensitivity, probes with different thicknesses of SnO2 have been fabricated and characterized for ammonia sensing. It has been found that at a particular thickness the sensitivity is highest. The reason for the highest sensitivity at a particular thickness has been evinced theoretically. The electromagnetic field distribution for the multilayer structure of the probe reveals the enhancement of the evanescent field at the tin oxide-ammonia gas interface, which in turn manifests the highest shift in resonance wavelength at a particular thickness. The selectivity of the probe has been tested for various gases, and it has been found to be most accurate for the sensing of ammonia. A sensor utilizing optical fiber, the SPR technique, and metal oxide as sensing element combines the advantages of a miniaturized probe, online monitoring, and remote sensing on one hand and stability, high sensitivity and selectivity, ruggedness, and low cost on the other. PMID:26479808

  14. Distribution of chemical elements in soils and stream sediments in the area of abandoned Sb-As-Tl Allchar mine, Republic of Macedonia.

    PubMed

    Bačeva, Katerina; Stafilov, Trajče; Šajn, Robert; Tănăselia, Claudiu; Makreski, Petre

    2014-08-01

    The aim of this study was to investigate the distribution of some toxic elements in topsoil and subsoil, focusing on the identification of natural and anthropogenic element sources in the small region of rare As-Sb-Tl mineralization outcrop and abandoned mine Allchar known for the highest natural concentration of Tl in soil worldwide. The samples of soil and sediments after total digestion were analyzed by inductively coupled plasma-mass spectrometry (ICP-MS) and inductively coupled plasma-atomic emission spectrometry (ICP-AES). Factor analysis (FA) was used to identify and characterize element associations. Six associations of elements were determined by the method of multivariate statistics: Rb-Ta-K-Nb-Ga-Sn-Ba-Bi-Li-Be-(La-Eu)-Hf-Zr-Zn-In-Pd-Ag-Pt-Mg; Tl-As-Sb-Hg; Te-S-Ag-Pt-Al-Sc-(Gd-Lu)-Y; Fe-Cu-V-Ge-Co-In; Pd-Zr-Hf-W-Be and Ni-Mn-Co-Cr-Mg. The purpose of the assessment was to determine the nature and extent of potential contamination as well as to broadly assess possible impacts to human health and the environment. The results from the analysis of the collected samples in the vicinity of the mine revealed that As and Tl elements have the highest median values. Higher median values for Sb are obviously as a result of the past mining activities and as a result of area surface phenomena in the past. PMID:24906071

  15. Distribution of chemical elements in soils and stream sediments in the area of abandoned Sb-As-Tl Allchar mine, Republic of Macedonia.

    PubMed

    Bačeva, Katerina; Stafilov, Trajče; Šajn, Robert; Tănăselia, Claudiu; Makreski, Petre

    2014-08-01

    The aim of this study was to investigate the distribution of some toxic elements in topsoil and subsoil, focusing on the identification of natural and anthropogenic element sources in the small region of rare As-Sb-Tl mineralization outcrop and abandoned mine Allchar known for the highest natural concentration of Tl in soil worldwide. The samples of soil and sediments after total digestion were analyzed by inductively coupled plasma-mass spectrometry (ICP-MS) and inductively coupled plasma-atomic emission spectrometry (ICP-AES). Factor analysis (FA) was used to identify and characterize element associations. Six associations of elements were determined by the method of multivariate statistics: Rb-Ta-K-Nb-Ga-Sn-Ba-Bi-Li-Be-(La-Eu)-Hf-Zr-Zn-In-Pd-Ag-Pt-Mg; Tl-As-Sb-Hg; Te-S-Ag-Pt-Al-Sc-(Gd-Lu)-Y; Fe-Cu-V-Ge-Co-In; Pd-Zr-Hf-W-Be and Ni-Mn-Co-Cr-Mg. The purpose of the assessment was to determine the nature and extent of potential contamination as well as to broadly assess possible impacts to human health and the environment. The results from the analysis of the collected samples in the vicinity of the mine revealed that As and Tl elements have the highest median values. Higher median values for Sb are obviously as a result of the past mining activities and as a result of area surface phenomena in the past.

  16. Investigation of electrochemical migration on Sn-0.7Cu-0.3Ag-0.03P-0.005Ni solder alloy in HNO{sub 3} solution

    SciTech Connect

    Sarveswaran, C.; Othman, N. K.; Ali, M. Yusuf Tura; Ani, F. Che; Samsudin, Z.

    2015-09-25

    Current issue in lead-free solder in term of its reliability is still under investigation. This high impact research attempts to investigate the electrochemical migration (ECM) on Sn-0.7Cu-0.3Ag-0.03P-0.005Ni solder alloy by Water Drop Test (WDT) in different concentration of HNO{sub 3} solution. The concentration of HNO{sub 3} solution used in this research was 0.05, 0.10, 0.50 and 1M. Optical Microscope (OM), Field Emission Scanning Electron Microscope (FESEM) and Energy Dispersive X-Ray Analysis (EDX) were carried out in order to analysis the ECM behavior based on the growth of dendrite formation after WDT. In general, the results demonstrated that dendrite growth is faster in higher concentration compared with low concentration of HNO{sub 3}. The concentration of HNO{sub 3} solution used has a strong correlation with Mean-Time-To-Failure (MTTF). As the concentration of HNO{sub 3} increases, the MTTF value decreases. Based on the MTTF results the solder alloy in 1M HNO{sub 3} solution is most susceptible to ECM. SnO{sub 2} forms as a corrosion by-product in the samples proved by EDX analysis. The solder alloy poses a high reliability risk in microelectronic devices during operation in 1M HNO{sub 3} solution.

  17. Effect of indium and antimony doping in SnS single crystals

    SciTech Connect

    Chaki, Sunil H. Chaudhary, Mahesh D.; Deshpande, M.P.

    2015-03-15

    Highlights: • Single crystals growth of pure SnS, indium doped SnS and antimony doped SnS by direct vapour transport (DVT) technique. • Doping of In and Sb occurred in SnS single crystals by cation replacement. • The replacement mechanism ascertained by EDAX, XRD and substantiated by Raman spectra analysis. • Dopants concentration affects the optical energy bandgap. • Doping influences electrical transport properties. - Abstract: Single crystals of pure SnS, indium (In) doped SnS and antimony (Sb) doped SnS were grown by direct vapour transport (DVT) technique. Two doping concentrations of 5% and 15% each were employed for both In and Sb dopants. Thus in total five samples were studied viz., pure SnS (S1), 5% In doped SnS (S2), 15% In doped SnS (S3), 5% Sb doped SnS (S4) and 15% Sb doped SnS (S5). The grown single crystal samples were characterized by evaluating their surface microstructure, stoichiometric composition, crystal structure, Raman spectroscopy, optical and electrical transport properties using appropriate techniques. The d.c. electrical resistivity and thermoelectric power variations with temperature showed semiconducting and p-type nature of the as-grown single crystal samples. The room temperature Hall Effect measurements further substantiated the semiconducting and p-type nature of the as-grown single crystal samples. The obtained results are deliberated in detail.

  18. Efficient planar Sb2S3 solar cells using a low-temperature solution-processed tin oxide electron conductor.

    PubMed

    Lei, Hongwei; Yang, Guang; Guo, Yaxiong; Xiong, Liangbin; Qin, Pingli; Dai, Xin; Zheng, Xiaolu; Ke, Weijun; Tao, Hong; Chen, Zhao; Li, Borui; Fang, Guojia

    2016-06-28

    Efficient planar antimony sulfide (Sb2S3) heterojunction solar cells have been made using chemical bath deposited (CBD) Sb2S3 as the absorber, low-temperature solution-processed tin oxide (SnO2) as the electron conductor and poly (3-hexylthiophene) (P3HT) as the hole conductor. A solar conversion efficiency of 2.8% was obtained at 1 sun illumination using a planar device consisting of F-doped SnO2 substrate/SnO2/CBD-Sb2S3/P3HT/Au, whereas the solar cells based on a titanium dioxide (TiO2) electron conductor exhibited a power conversion efficiency of 1.9%. Compared with conventional Sb2S3 sensitized solar cells, the high-temperature processed mesoscopic TiO2 scaffold is no longer needed. More importantly, a low-temperature solution-processed SnO2 layer was introduced for electron transportation to substitute the high-temperature sintered dense blocking TiO2 layer. Our planar solar cells not only have simple geometry with fewer steps to fabricate but also show enhanced performance. The higher efficiency of planar Sb2S3 solar cell devices based on a SnO2 electron conductor is attributed to their high transparency, uniform surface, efficient electron transport properties of SnO2, suitable energy band alignment, and reduced recombination at the interface of SnO2/Sb2S3. PMID:27264190

  19. Efficient planar Sb2S3 solar cells using a low-temperature solution-processed tin oxide electron conductor.

    PubMed

    Lei, Hongwei; Yang, Guang; Guo, Yaxiong; Xiong, Liangbin; Qin, Pingli; Dai, Xin; Zheng, Xiaolu; Ke, Weijun; Tao, Hong; Chen, Zhao; Li, Borui; Fang, Guojia

    2016-06-28

    Efficient planar antimony sulfide (Sb2S3) heterojunction solar cells have been made using chemical bath deposited (CBD) Sb2S3 as the absorber, low-temperature solution-processed tin oxide (SnO2) as the electron conductor and poly (3-hexylthiophene) (P3HT) as the hole conductor. A solar conversion efficiency of 2.8% was obtained at 1 sun illumination using a planar device consisting of F-doped SnO2 substrate/SnO2/CBD-Sb2S3/P3HT/Au, whereas the solar cells based on a titanium dioxide (TiO2) electron conductor exhibited a power conversion efficiency of 1.9%. Compared with conventional Sb2S3 sensitized solar cells, the high-temperature processed mesoscopic TiO2 scaffold is no longer needed. More importantly, a low-temperature solution-processed SnO2 layer was introduced for electron transportation to substitute the high-temperature sintered dense blocking TiO2 layer. Our planar solar cells not only have simple geometry with fewer steps to fabricate but also show enhanced performance. The higher efficiency of planar Sb2S3 solar cell devices based on a SnO2 electron conductor is attributed to their high transparency, uniform surface, efficient electron transport properties of SnO2, suitable energy band alignment, and reduced recombination at the interface of SnO2/Sb2S3.

  20. Theoretical investigations of half-metallic ferromagnetism in new Half-Heusler YCrSb and YMnSb alloys using first-principle calculations

    NASA Astrophysics Data System (ADS)

    Atif Sattar, M.; Rashid, Muhammad; Hashmi, M. Raza; Ahmad, S. A.; Imran, Muhammad; Hussain, Fayyaz

    2016-10-01

    Structural, electronic, and magnetic properties of new predicted half-Heusler YCrSb and YMnSb compounds within the ordered MgAgAs C1b-type structure are investigated by employing first-principal calculations based on density functional theory. Through the calculated total energies of three possible atomic placements, we find the most stable structures regarding YCrSb and YMnSb materials, where Y, Cr(Mn), and Sb atoms occupy the (0.5, 0.5, 0.5), (0.25, 0.25, 0.25), and (0, 0, 0) positions, respectively. Furthermore, structural properties are explored for the non-magnetic and ferromagnetic and anti-ferromagnetic states and it is found that both materials prefer ferromagnetic states. The electronic band structure shows that YCrSb has a direct band gap of 0.78 eV while YMnSb has an indirect band gap of 0.40 eV in the majority spin channel. Our findings show that YCrSb and YMnSb materials exhibit half-metallic characteristics at their optimized lattice constants of 6.67 Å and 6.56 Å, respectively. The half-metallicities associated with YCrSb and YMnSb are found to be robust under large in-plane strains which make them potential contenders for spintronic applications.

  1. Shell model calculation for Te and Sn isotopes in the vicinity of {sup 100}Sn

    SciTech Connect

    Yakhelef, A.; Bouldjedri, A.

    2012-06-27

    New Shell Model calculations for even-even isotopes {sup 104-108}Sn and {sup 106,108}Te, in the vicinity of {sup 100}Sn have been performed. The calculations have been carried out using the windows version of NuShell-MSU. The two body matrix elements TBMEs of the effective interaction between valence nucleons are obtained from the renormalized two body effective interaction based on G-matrix derived from the CD-bonn nucleon-nucleon potential. The single particle energies of the proton and neutron valence spaces orbitals are defined from the available spectra of lightest odd isotopes of Sb and Sn respectively.

  2. Metallurgical characterization of experimental Ag-based soldering alloys

    PubMed Central

    Ntasi, Argyro; Al Jabbari, Youssef S.; Silikas, Nick; Al Taweel, Sara M.; Zinelis, Spiros

    2014-01-01

    Aim To characterize microstructure, hardness and thermal properties of experimental Ag-based soldering alloys for dental applications. Materials and methods Ag12Ga (AgGa) and Ag10Ga5Sn (AgGaSn) were fabricated by induction melting. Six samples were prepared for each alloy and microstructure, hardness and their melting range were determined by, scanning electron microscopy, energy dispersive X-ray (EDX) microanalysis, X-ray diffraction (XRD), Vickers hardness testing and differential scanning calorimetry (DSC). Results Both alloys demonstrated a gross dendritic microstructure while according to XRD results both materials consisted predominately of a Ag-rich face centered cubic phase The hardness of AgGa (61 ± 2) was statistically lower than that of AgGaSn (84 ± 2) while the alloys tested showed similar melting range of 627–762 °C for AgGa and 631–756 °C for AgGaSn. Conclusion The experimental alloys tested demonstrated similar microstructures and melting ranges. Ga and Sn might be used as alternative to Cu and Zn to modify the selected properties of Ag based soldering alloys. PMID:25382945

  3. The first example of a mixed valence ternary compound of silver with random distribution of Ag(I) and Ag(II) cations.

    PubMed

    Mazej, Zoran; Michałowski, Tomasz; Goreshnik, Evgeny A; Jagličić, Zvonko; Arčon, Iztok; Szydłowska, Jadwiga; Grochala, Wojciech

    2015-06-28

    The reaction between colourless AgSbF6 and sky-blue Ag(SbF6)2 (molar ratio 2 : 1) in gaseous HF at 323 K yields green Ag3(SbF6)4, a new mixed-valence ternary fluoride of silver. Unlike in all other Ag(I)/Ag(II) systems known to date, the Ag(+) and Ag(2+) cations are randomly distributed on a single 12b Wyckoff position at the 4̄ axis of the I4̄3d cell. Each silver forms four short (4 × 2.316(7) Å) and four long (4 × 2.764(6) Å) contacts with the neighbouring fluorine atoms. The valence bond sum analysis suggests that such coordination would correspond to a severely overbonded Ag(I) and strongly underbonded Ag(II). Thorough inspection of thermal ellipsoids of the fluorine atoms closest to Ag centres reveals their unusual shape, indicating that silver atoms must in fact have different local coordination spheres; this is not immediately apparent from the crystal structure due to static disorder of fluorine atoms. The Ag K-edge XANES analysis confirmed that the average oxidation state of silver is indeed close to +1⅓. The optical absorption spectra lack features typical of a metal thus pointing out to the semiconducting nature of Ag3(SbF6)4. Ag3(SbF6)4 is magnetically diluted and paramagnetic (μ(eff) = 1.9 μ(B)) down to 20 K with a very weak temperature independent paramagnetism. Below 20 K weak antiferromagnetism is observed (Θ = -4.1 K). Replacement of Ag(I) with potassium gives K(I)2Ag(II)(SbF6)4 which is isostructural to Ag(I)2Ag(II)(SbF6)4. Ag3(SbF6)4 is a genuine mixed-valence Ag(I)/Ag(II) compound, i.e. Robin and Day Class I system (localized valences), despite Ag(I) and Ag(II) adopting the same crystallographic position. PMID:25815902

  4. Dissolution and Interfacial Reactions of (Cu,Ni)6Sn5 Intermetallic Compound in Molten Sn-Cu-Ni Solders

    NASA Astrophysics Data System (ADS)

    Wang, Chao-hong; Lai, Wei-han; Chen, Sinn-wen

    2014-01-01

    (Cu,Ni)6Sn5 is an important intermetallic compound (IMC) in lead-free Sn-Ag-Cu solder joints on Ni substrate. The formation, growth, and microstructural evolution of (Cu,Ni)6Sn5 are closely correlated with the concentrations of Cu and Ni in the solder. This study reports the interfacial behaviors of (Cu,Ni)6Sn5 IMC (Sn-31 at.%Cu-24 at.%Ni) with various Sn-Cu, Sn-Ni, and Sn-Cu-Ni solders at 250°C. The (Cu,Ni)6Sn5 substrate remained intact for Sn-0.7 wt.%Cu solder. When the Cu concentration was decreased to 0.3 wt.%, (Cu,Ni)6Sn5 significantly dissolved into the molten solder. Moreover, (Cu,Ni)6Sn5 dissolution and (Ni,Cu)3Sn4 formation occurred simultaneously for the Sn-0.1 wt.%Ni solder. In Sn-0.5 wt.%Cu-0.2 wt.%Ni solder, many tiny (Cu,Ni)6Sn5 particulates were formed and dispersed in the solder matrix, while in Sn-0.3 wt.%Cu-0.2 wt.%Ni a lot of (Ni,Cu)3Sn4 grains were produced. Based on the local equilibrium hypothesis, these results are further discussed based on the liquid-(Cu, Ni)6Sn5-(Ni,Cu)3Sn4 tie-triangle, and the liquid apex is suggested to be very close to Sn-0.4 wt.%Cu-0.2 wt.%Ni.

  5. Theoretical electron scattering amplitudes and spin polarizations. Electron energies 100 to 1500 eV Part II. Be, N, O, Al, Cl, V, Co, Cu, As, Nb, Ag, Sn, Sb, I, and Ta targets

    NASA Astrophysics Data System (ADS)

    Wildhaber, M. L.; Wikle, C. K.; Anderson, C. J.; Franz, K. J.; Moran, E. H.; Dey, R.

    2012-12-01

    Recent decades have brought substantive changes in land use and climate across the earth, prompting a need to think of population and community ecology not as a static entity, but as a dynamic process. Increasingly there is evidence of ecological changes due to climate change. Although much of this evidence comes from ground-truth observations of biogeographic data, there is increasing reliance on models that relate climate variables to biological systems. Such models can then be used to explore potential changes to population and community level ecological systems in response to climate scenarios as obtained from global climate models (GCMs). A key issue associated with modeling ecosystem response to climate is GCM downscaling to regional and local ecological/biological response models that can be used in vulnerability and risk assessments of the potential effects of climate change. The need is for an explicit means for scaling results up or down multiple hierarchical levels and an effective assessment of the level of uncertainty surrounding current knowledge, data, and data collection methods with these goals identified as in need of acceleration in the U.S. Climate Change Science Program FY2009 Implementation Priorities. In the end, such work should provide the information needed to develop adaptation and mitigation methodologies to minimize the effects of directional and nonlinear climate change on the Nation's land, water, ecosystems, and biological populations. We are working to develop an approach that includes multi-scale and hierarchical Bayesian modeling of Missouri River sturgeon population dynamics. Statistical linkages are defined to quantify implications of climate on fish populations of the Missouri River ecosystem. This approach is a hybrid between physical (deterministic) downscaling and statistical downscaling, recognizing that there is uncertainty in both. The model must include linkages between climate and habitat, and between habitat and population. A key advantage of the hierarchical approach used in this study is that it incorporates various sources of observations and includes established scientific knowledge, and associated uncertainties. The goal is to evaluate the potential distributional changes in an ecological system, given distributional changes implied by a series of linked climate and system models under various emissions/use scenarios. The predictive modeling system being developed will be a powerful tool for evaluating management options for coping with global change consequences and assessing uncertainty of those evaluations. Specifically for the endangered pallid sturgeon (Scaphirhynchus albus), we are already able to assess potential effects of any climate scenario on growth and population size distribution. Future models will incorporate survival and reproduction. Ultimately, these models provide guidance for successful recovery and conservation of the pallid sturgeon. Here we present a basic outline of the approach we are developing and a simple pallid sturgeon example to demonstrate how multiple scales and parameter uncertainty are incorporated.

  6. Characterization of silver photodiffusion in Ge{sub 8}Sb{sub 2}Te{sub 11} thin films

    SciTech Connect

    Kumar, Sandeep; Singh, D.; Sandhu, S.; Thangaraj, R.

    2015-06-24

    Silver-doped amorphous Ge{sub 8}Sb{sub 2}Te{sub 11} thin films have been prepared by photodiffusion at room-temperature; the Ge{sub 8}Sb{sub 2}Te{sub 11}/Ag bilayer was deposited by vacuum thermal evaporation. Photodiffusion of Ag into the amorphous Ge{sub 8}Sb{sub 2}Te{sub 11} thin films has been carried out by illuminating the prepared Ge{sub 8}Sb{sub 2}Te{sub 11}/Ag bilayer with halogen lamp. The photodiffused silver depth profile was traced by means of time of flight secondary ion mass spectroscopy. The film remains amorphous after Ag photodiffusion. The crystallization temperature of the films was evaluated by temperature dependent sheet resistance measurement. The amorphous nature and crystalline phases of the films have been identified by using X-ray diffraction.

  7. ([M(NH{sub 3}){sub 6}][Ag{sub 4}M{sub 4}Sn{sub 3}Se{sub 13}]){sub ∞} (M=Zn, Mn): Three-dimensional chalcogenide frameworks constructed from quaternary metal selenide clusters with two different transition metals

    SciTech Connect

    Xiong, Wei-Wei; Miao, Jianwei; Li, Pei-Zhou; Zhao, Yanli; Liu, Bin; Zhang, Qichun

    2014-10-15

    Herein we report solvothermal syntheses of two new three-dimensional chalcogenide frameworks ([M(NH{sub 3}){sub 6}][Ag{sub 4}M{sub 4}Sn{sub 3}Se{sub 13}]){sub n} (M=Zn (1), Mn (2)), which consist of quaternary metal selenide clusters with two different transition metals. The compounds represent the first Ag–Zn/Mn–Sn–Se based quaternary anionic frameworks. The optical studies show that the band gaps for 1 and 2 are 2.09 eV and 1.71 eV, respectively. Moreover, the photoelectrochemical study indicates that compound 1 displays n-type semiconducting behaviour and is photoactive under visible light illumination (λ>400 nm). - Graphical abstract: Two 3D framework selenides, [M(NH{sub 3}){sub 6}][Ag{sub 4}M{sub 4}Sn{sub 3}Se{sub 13}] (M=Zn (1), Mn (2)), constructed from quaternary metal selenide clusters, have been solvothermally synthesized and are photoactive under visible light illumination. - Highlights: • Two new three-dimensional selenide frameworks. • Quaternary metal selenide clusters with two different transition metals. • Photoelectrochemical study.

  8. Zr5Sb3-first Superconductor in the Mn5Si3-type system

    NASA Astrophysics Data System (ADS)

    Lv, Bing; Zhu, X. Y.; Lorenz, B.; Wei, F. Y.; Xue, Y. Y.; Yin, Z. P.; Kotliar, G.; Chu, C. W.

    2014-03-01

    Systematic exploration for superconductivity in the Zr5X3 (x =Sb, Sn, Ge, Ga, and Al) system have been carried out, and we report the discovery of superconductivity at 2.3 K in Zr5Sb3, the first superconducting member in the large compound family of the Mn5Si3-structure type. Transport, magnetic, and calorimetric measurements clearly demonstrate the bulk superconductivity for the Zr5Sb3 and band structure calculations suggest it to be a possible phonon-mediated BCS superconductor, with a relatively large density of states at the Fermi level associated with the d-electrons of Zr and substantially larger electron-phonon coupling compared to the Sn counterpart compound Zr5Sn3. Detailed doping studies have shown that superconductivity in Zr5Sb3 is rather robust with Hf- and Y-substitution of Zr, but suppressed by Ti-substitution. It is also suppressed by interstitial filling in Zr5Sb3Z by Z = Sb, C, or O.

  9. NbFeSb based p-type half-Heusler for power generation applications

    NASA Astrophysics Data System (ADS)

    Joshi, Giri; He, Ran; Engber, Michael; Samsonidze, Georgy; Pantha, Tej; Dahal, Ekraj; Dahal, Keshab; Yang, Jian; Lan, Yucheng; Kozinsky, Boris; Ren, Zhifeng

    2015-03-01

    We report a peak dimensionless figure-of-merit (ZT) of ~1 at 700 oC in nanostructured p-type Nb0.6Ti0.4FeSb0.95Sn0.05composition. Even though the power factor of the Nb0.6Ti0.4FeSb0.95Sn0.05 composition is improved by 25% in comparison to the previously reported p-type Hf0.44Zr0.44Ti0.12CoSb0.8Sn0.2, the ZT value is not increased due to a higher thermal conductivity. However, the higher power factor of the Nb0.6Ti0.4FeSb0.95Sn0.05 composition led to a 15% increase in power output of a thermoelectric device in comparison to a device made from the previous best material Hf0.44Zr0.44Ti0.12CoSb0.8Sn0.2. The n-type material used to make the unicouple device is the best reported nanostructured Hf0.25Zr0.75NiSn0.99Sb0.01 composition with the lowest hafnium (Hf) content. Both the p- and n-type nanostructured samples are prepared by ball milling the arc melted ingot and hot pressing the finely ground powders. Moreover, the raw material cost of the Nb0.6Ti0.4FeSb0.95Sn0.05 composition is more than six times lower compared to the cost of the previous best p-type Hf0.44Zr0.44Ti0.12CoSb0.8Sn0.2. This cost reduction is crucial for these materials to be used in large-scale quantities for vehicle and industrial waste heat recovery applications. DOE:DE-EE0004840.

  10. In Situ Binding Sb Nanospheres on Graphene via Oxygen Bonds as Superior Anode for Ultrafast Sodium-Ion Batteries.

    PubMed

    Wan, Fang; Guo, Jin-Zhi; Zhang, Xiao-Hua; Zhang, Jing-Ping; Sun, Hai-Zhu; Yan, Qingyu; Han, Dong-Xue; Niu, Li; Wu, Xing-Long

    2016-03-01

    Graphene incorporation should be one effective strategy to develop advanced electrode materials for a sodium-ion battery (SIB). Herein, the micro/nanostructural Sb/graphene composite (Sb-O-G) is successfully prepared with the uniform Sb nanospheres (∼100 nm) bound on the graphene via oxygen bonds. It is revealed that the in-situ-constructed oxygen bonds play a significant role on enhancing Na-storage properties, especially the ultrafast charge/discharge capability. The oxygen-bond-enhanced Sb-O-G composite can deliver a high capacity of 220 mAh/g at an ultrahigh current density of 12 A/g, which is obviously superior to the similar Sb/G composite (130 mAh/g at 10 A/g) just without Sb-O-C bonds. It also exhibits the highest Na-storage capacity compared to Sb/G and pure Sb nanoparticles as well as the best cycling performance. More importantly, this Sb-O-G anode achieves ultrafast (120 C) energy storage in SIB full cells, which have already been shown to power a 26-bulb array and calculator. All of these superior performances originate from the structural stability of Sb-O-C bonds during Na uptake/release, which has been verified by ex situ X-ray photoelectron spectroscopies and infrared spectroscopies.

  11. Thermoelectric properties of semimetallic (Zr, Hf)CoSb half-Heusler phases

    NASA Astrophysics Data System (ADS)

    Xia, Y.; Bhattacharya, S.; Ponnambalam, V.; Pope, A. L.; Poon, S. J.; Tritt, T. M.

    2000-08-01

    Unlike semiconducting TiCoSb, ZrCoSb and HfCoSb half-Heusler phases are semimetallic below room temperature and exhibit small Seebeck coefficients of ˜-10 μV/K at 300 K. However, upon substituting (doping) the Co and Sb sites with Pt and Sn, respectively, much larger thermopowers (S) are obtained. For ZrCoSb, S reaches -110 and +130 μV/K while resistivity ρ decreases from ˜5×104 μΩ cm in the undoped phase to 1-2×103 μΩ cm in the substituted phases at 300 K. The lowest thermal conductivity obtained in the substituted alloys is ˜3.0 W/m K at 300 K, which is among the lowest reported for this class of structural phases. There are indications that the thermoelectric properties have not been optimized in these multinary alloys.

  12. Liquidus projection of the Ag-Ba-Ge system and melting points of clathrate type-I compounds

    SciTech Connect

    Zeiringer, I.; Grytsiv, A.; Broz, P.

    2012-12-15

    The liquidus and solidus projection has been constructed for the Ag-Ba-Ge system up to 33.3 at% Ba, using electron micro probe analysis (EPMA), X-ray powder diffraction (XRD) and differential thermal analysis (DSC/DTA). Eight different primary crystallization regions were found: (Ge), Ba{sub 8}Ag{sub x}Ge{sub 46-x-y}{open_square}{sub y} ({kappa}{sub I}) ({open_square} is a vacancy), Ba{sub 6}Ag{sub x}Ge{sub 25-x} ({kappa}{sub Ix}), BaGe{sub 2}, Ba(Ag{sub 1-x}Ge{sub x}){sub 2} ({tau}{sub 1}), BaAg{sub 2-x}Ge{sub 2+x} ({tau}{sub 2}) BaAg{sub 5} and (Ag). The ternary invariant reactions have been determined for the region investigated and are the basis for a Schulz-Scheil diagram. The second part of this work provides a comprehensive compilation of melting points of ternary A{sub 8}T{sub x}M{sub 46-x} and quaternary (A=Sr, Ba, Eu; T=Ni, Pd, Pt, Cu, Ag, Au, Zn, Cd, B, Al, Ga; M=Si, Ge, Sn) clathrate type-I compounds and decomposition temperatures of inverse clathrate type-I Ge{sub 38}{l_brace}P,As,Sb{r_brace}{sub 8}{l_brace}Cl,Br,I{r_brace}{sub 8}, Si{sub 46-x}P{sub x}Te{sub y} and tin based compounds. - Graphical Abstract: Partial liquidus projection of the Ag-Ba-Ge system. Highlights: Black-Right-Pointing-Pointer The liquidus and solidus projection has been constructed for the Ag-Ba-Ge system up to 33.33 at% Ba. Black-Right-Pointing-Pointer Eight different primary crystallization fields have been found. Black-Right-Pointing-Pointer All the ternary compounds form congruently from the melt. Black-Right-Pointing-Pointer The ternary invariant reactions have been determined and are the basis for a Schulz-Scheil diagram.

  13. Realizing the Full Potential of Insertion Anodes for Mg-ion Batteries Through the Nano-Structuring of Sn

    SciTech Connect

    Parent, Lucas R.; Cheng, Yingwen; Sushko, Petr; Shao, Yuyan; Liu, Jun; Wang, Chong M.; Browning, Nigel D.

    2015-02-11

    For next-generation rechargeable batteries, magnesium is of great interest as an alternative to Lithium due to its relative abundance, low toxicity, and bivalent charge (3833 mAh/cm3 and 2205 mAh/g). However, Mg-ion batteries face unique challenges related to the formation of anode passivation layers, anode-electrolyte-cathode incompatibilities, slow solid-state Mg2+ diffusion, and ion trapping. Using analytical (scanning) transmission electron microscopy ((S)TEM) and ab initio modeling, we have investigated Mg2+ intercalation and extraction mechanisms in β-SnSb alloy nanoparticles (NPs). During the first several charge-discharge cycles, the SnSb particles irreversibly break down into a network of pure-Sn and Sb-rich sub-particles, as Mg-ions replace Sn ions in the SnSb lattice. Once the morphology has stabilized, the small Sn NPs (< 20 nm) are responsible for the majority of reversible storage capacity, while the Sb-rich particles trap substitutional-Mg atoms in the lattice and are significantly less active. This result strongly indicates that pure-Sn nanoparticles on a graphene support can act as a high capacity anode for Mg-ion batteries.

  14. Chemical ordering rather than random alloying in SbAs

    NASA Astrophysics Data System (ADS)

    Shoemaker, Daniel P.; Chasapis, Thomas C.; Do, Dat; Francisco, Melanie C.; Chung, Duck Young; Mahanti, S. D.; Llobet, Anna; Kanatzidis, Mercouri G.

    2013-03-01

    The semimetallic group-V elements display a wealth of correlated electron phenomena due to a small indirect band overlap that leads to relatively small, but equal, numbers of holes and electrons at the Fermi energy with high mobility. Their electronic bonding characteristics produce a unique crystal structure, the rhombohedral A7 structure, which accommodates lone pairs on each site. Here, we show via single-crystal and synchrotron x-ray diffraction that antimony arsenide (SbAs) is a compound and the A7 structure can display chemical ordering of Sb and As, which were previously thought to mix randomly. Formation of this compound arises due to differences in electronegativity that are common to IV-VI compounds of average group V such as GeTe, SnS, PbS, and PbTe, and also ordered intraperiod compounds such as CuAu and NiPt. High-temperature diffraction studies reveal an order-disorder transition around 550 K in SbAs, which is in stark contrast to IV-VI compounds GeTe and SnTe that become cubic at elevated temperatures but do not disorder. Transport and infrared reflectivity measurements, along with first-principles calculations, confirm that SbAs is a semimetal, albeit with a direct band separation larger than that of Sb or As. Because even subtle substitutions in the semimetals, notably Bi1-xSbx, can open semiconducting energy gaps, a further investigation of the interplay between chemical ordering and electronic structure on the A7 lattice is warranted.

  15. TPX Sb3SN Conductor Testing at LBL

    SciTech Connect

    Lietzke, A.F.; Scanlan, R.

    1995-07-01

    Two wire lengths (one from Supercon and one from IGC) were delivered for testing at the LBL Short-Sample Test Facility. Several samples of each wire-type were wound onto forms and reacted according to the requested prescriptions. Leads and voltage-tap wires were carefully attached after reaction according to standard LBL short-sample test procedures. Testing of some of the samples has been completed. Liquid helium immersion (4.2K) data was gathered over a limited range of magnetic fields (5-10T). Additional gas-cooled data was collected over a range of temperatures (1.8-14 K). Testing was interrupted when the test-magnet's persistent-switch-heater failed. Good sample-to-sample and retest repeatability was observed for the 4.2K data when it was checked. Temperature measruements on the Supercon samples used CGR's and revealed a disappointing, non-repeatable (pressure-dependent) temperature offset for the gas-cooled measurements. They also observed a systematic dependence upon magnetic-field strength. Changing to a second CGR did not help. The IGC sample used a Cernox-type resistor which showed negligible magnetic and pressure dependencies. Testing is expected to resume when the magnet is repaired.

  16. Ba-filled Ni–Sb–Sn based skutterudites with anomalously high lattice thermal conductivity

    DOE PAGES

    Paschinger, W.; Rogl, Gerda; Grytsiv, A.; Michor, H.; Heinrich, P. R.; Mueller, H.; Puchegger, S.; Klobes, B.; Hermann, Raphael P.; Reinecker, M.; et al

    2016-06-21

    Here, in this study, novel filled skutterudites BayNi4Sb12-xSnx (ymax = 0.93) have been prepared by arc melting followed by annealing at 250, 350 and 450°C up to 30 days in vacuum-sealed quartz vials. Extension of the homogeneity region, solidus temperatures and structural investigations were performed for the skutterudite phase in the ternary Ni–Sn–Sb and in the quaternary Ba–Ni–Sb–Sn systems. Phase equilibria in the Ni–Sn–Sb system at 450°C were established by means of Electron Probe Microanalysis (EPMA) and X-ray Powder Diffraction (XPD). With rather small cages Ni4(Sb,Sn)12, the Ba–Ni–Sn–Sb skutterudite system is perfectly suited to study the influence of filler atomsmore » on the phonon thermal conductivity. Single-phase samples with the composition Ni4Sb8.2Sn3.8, Ba0.42Ni4Sb8.2Sn3.8 and Ba0.92Ni4Sb6.7Sn5.3 were used to measure their physical properties, i.e. temperature dependent electrical resistivity, Seebeck coefficient and thermal conductivity. The resistivity data demonstrate a crossover from metallic to semiconducting behaviour. The corresponding gap width was extracted from the maxima in the Seebeck coefficient data as a function of temperature. Single crystal X-ray structure analyses at 100, 200 and 300 K revealed the thermal expansion coefficients as well as Einstein and Debye temperatures for Ba0.73Ni4Sb8.1Sn3.9 and Ba0.95Ni4Sb6.1Sn5.9. These data were in accordance with the Debye temperatures obtained from the specific heat (4.4 K < T < 140 K) and Mössbauer spectroscopy (10 K < T < 290 K). Rather small atom displacement parameters for the Ba filler atoms indicate a severe reduction in the “rattling behaviour” consistent with the high levels of lattice thermal conductivity. The elastic moduli, collected from Resonant Ultrasonic Spectroscopy ranged from 100 GPa for Ni4Sb8.2Sn3.8 to 116 GPa for Ba0.92Ni4Sb6.7Sn5.3. The thermal expansion coefficients were 11.8 × 10-6 K-1 for Ni4Sb8.2Sn3.8 and 13.8 × 10-6 K-1 for Ba0.92Ni4

  17. Alpha decay of 109I and its implications for the proton decay of 105Sb and the astrophysical rapid proton-capture process.

    PubMed

    Mazzocchi, C; Grzywacz, R; Liddick, S N; Rykaczewski, K P; Schatz, H; Batchelder, J C; Bingham, C R; Gross, C J; Hamilton, J H; Hwang, J K; Ilyushkin, S; Korgul, A; Królas, W; Li, K; Page, R D; Simpson, D; Winger, J A

    2007-05-25

    An alpha-decay branch of (1.4+/-0.4) x 10(-4) has been discovered in the decay of 109I, which predominantly decays via proton emission. The measured Q(alpha) value of 3918+/-21 keV allows the indirect determination of the Q value for proton emission from 105Sb of 356+/-22 keV, which is approximately of 130 keV more bound than previously reported. This result is relevant for the astrophysical rapid proton-capture process, which would terminate in the 105Sn(p,gamma)106Sb(p,gamma)107Te(alpha decay)103Sn cycle at the densities expected in explosive hydrogen burning scenarios, unless unusually strong pairing effects result in a 103Sn(p,gamma)104Sb(p,gamma)105Te(alpha decay)101Sn) cycle.

  18. Electrical transport properties of TiCoSb half-Heusler phases that exhibit high resistivity

    NASA Astrophysics Data System (ADS)

    Xia, Y.; Ponnambalam, V.; Bhattacharya, S.; Pope, A. L.; Poon, S. J.; Tritt, T. M.

    2001-01-01

    Electrical transport measurements have been performed on doped and undoped TiCoSb half-Heusler phases. The semiconducting properties are found to be more robust than those reported for MNiSn (M = Ti, Zr, Hf ). Undoped TiCoSb phases exhibit large n-type Seebeck coefficients and high resistivities that reach -500 µV K-1 at 300 K and ~1500 Ω cm at 4.2 K, respectively. A tendency towards carrier localization is seen in several disordered phases. The effects due to n-type and p-type dopants are readily manifested in the thermopower, from which moderately heavy electron and hole band masses are inferred. The unusual properties measured are consistent with the prediction of a wide bandgap for the TiCoSb phase. A resistivity minimum is observed at 500-600 K for undoped and V-doped TiCoSb. Consequently, the semiconducting gap has not been determined.

  19. Te-defect interaction in GaSb: donor-vacancy pair or DX-center?

    NASA Astrophysics Data System (ADS)

    Wende, L.; Sielemann, R.; Weyer, G.

    1999-09-01

    We have studied 119Te donor atoms in GaSb incorporated by a recoil implantation technique by applying emission Mössbauer spectroscopy on 119Sn. Since 119Te decays via the intermediate 119Sb the thermal stability of the microscopic environment of the implanted Te atoms can be probed either in the Te state or, after transmutation, in the Sb state. It is found that part of the probes is situated in a strongly distorted configuration which cannot be annealed as long as the probes are Te. After transmutation to Sb the distorted state anneals at 405 K. From these results we conclude that the distorted configuration is implantation induced (very likely a probe-vacancy association) stabilized by the Te chemistry and not a DX center which should anneal with a much lower barrier.

  20. Electrochemical properties of Sn-decorated SnO nanobranches as an anode of Li-ion battery

    NASA Astrophysics Data System (ADS)

    Shin, Jeong Ho; Song, Jae Yong

    2016-05-01

    Sn-based oxide materials as an anode of lithium ion batteries (LIBs) suffer from the unavoidable mechanical stress originated from huge volume changes during lithiation/delithiation reactions. We synthesized the hierarchical SnO nanobranches (NBs) decorated with Sn nanoparticles on Cu current collector using a vapor transport method. The Sn-decorated SnO NBs as an anode of LIB showed good electrochemical performance with high reversible capacity retention of as high as 502 mAh/g and rate capability of 455 mAh/g at a current density of 2.0 A/g after 50 cycles. Through the morphological and crystal structure analyses after the charge and discharge processes, it was found that the morphology of Sn-decorated SnO NBs was transformed to nanoporous layered-structure, composed of Sn and lithium oxide, during the repeated lithiation/delithiation reactions. The free-volume of Sn-decorated SnO NBs and nanoporous layered-structure effectively accommodate the huge volume changes and enhance the electrochemical cyclability by facilitating the diffusion of Li-ions.

  1. Hierarchical active factors to band gap and nonlinear optical response in Ag-containing quaternary-chalcogenide compounds

    NASA Astrophysics Data System (ADS)

    Huang, Jun-ben; Mamat, Mamatrishat; Pan, Shilie; Yang, Zhihua

    2016-07-01

    In this research work, Ag-containing quaternary-chalcogenide compounds KAg2TS4 (T=P, Sb) (I-II) and RbAg2SbS4 (III) have been studied by means of Density Functional Theory as potential IR nonlinear optical materials. The origin of wide band gap, different optical anisotropy and large SHG response is explained via a combination of density of states, electronic density difference and bond population analysis. It is indicated that the different covalent interaction behavior of P-S and Sb-S bonds dominates the band gap and birefringence. Specifically, the Ag-containing chalcogenide compound KAg2PS4 possesses wide band gap and SHG response comparable with that of AgGaS2. By exploring the origin of the band gap and NLO response for compounds KAg2TS4 (T=P, Sb), we found the determination factor to the properties is different, especially the roles of Ag-d orbitals and bonding behavior of P-S or Sb-S. Thus, the compounds KAg2TS4 (T=P, Sb) and RbAg2SbS4 can be used in infrared (IR) region.

  2. Structural transformation of Sb-based high-speed phase-change material.

    PubMed

    Matsunaga, Toshiyuki; Kojima, Rie; Yamada, Noboru; Kubota, Yoshiki; Kifune, Kouichi

    2012-12-01

    The crystal structure of a phase-change recording material (the compound Ag(3.4)In(3.7)Sb(76.4)Te(16.5)) enclosed in a vacuum capillary tube was investigated at various temperatures in a heating process using a large Debye-Scherrer camera installed in BL02B2 at SPring-8. The amorphous phase of this material turns into a crystalline phase at around 416 K; this crystalline phase has an A7-type structure with atoms of Ag, In, Sb or Te randomly occupying the 6c site in the space group. This structure was maintained up to around 545 K as a single phase, although thermal expansion of the crystal lattice was observed. However, above this temperature, phase separation into AgInTe(2) and Sb-Te transpired. The first fragment, AgInTe(2), reliably maintained its crystal structure up to the melting temperature. On the other hand, the atomic configuration of the Sb-Te gradually varied with increasing temperature. This gradual structural transformation can be described as a continuous growth of the modulation period γ. PMID:23165592

  3. Molar and excess volumes of liquid In-Sb, Mg-Sb, and Pb-Sb alloys

    SciTech Connect

    Hansen, A.R.; Kaminski, M.A. ); Eckert, C.A. )

    1990-04-01

    By a direct Archimedes' technique, volumetric data were obtained for liquid In, Mg, Pb, and Sb and mixtures of In-Sb, Mg-Sb, and Pb-Sb. In this paper the excess volumes for the alloys studied are presented and discussed.

  4. Interconnection of thermal parameters, microstructure and mechanical properties in directionally solidified Sn–Sb lead-free solder alloys

    SciTech Connect

    Dias, Marcelino; Costa, Thiago; Rocha, Otávio; Spinelli, José E.; Cheung, Noé; Garcia, Amauri

    2015-08-15

    Considerable effort is being made to develop lead-free solders for assembling in environmental-conscious electronics, due to the inherent toxicity of Pb. The search for substitute alloys of Pb–Sn solders has increased in order to comply with different soldering purposes. The solder must not only meet the expected levels of electrical performance but may also have appropriate mechanical strength, with the absence of cracks in the solder joints. The Sn–Sb alloy system has a range of compositions that can be potentially included in the class of high temperature solders. This study aims to establish interrelations of solidification thermal parameters, microstructure and mechanical properties of Sn–Sb alloys (2 wt.%Sb and 5.5 wt.%Sb) samples, which were directionally solidified under cooling rates similar to those of reflow procedures in industrial practice. A complete high-cooling rate cellular growth is shown to be associated with the Sn–2.0 wt.%Sb alloy and a reverse dendrite-to-cell transition is observed for the Sn–5.5 wt.%Sb alloy. Strength and ductility of the Sn–2.0 wt.%Sb alloy are shown not to be affected by the cellular spacing. On the other hand, a considerable variation in these properties is associated with the cellular region of the Sn–5.5 wt.%Sb alloy casting. - Graphical abstract: Display Omitted - Highlights: • The microstructure of the Sn–2 wt.%Sb alloy is characterized by high-cooling rates cells. • Reverse dendrite > cell transition occurs for Sn–5.5 wt.%Sb alloy: cells prevail for cooling rates > 1.2 K/s. • Sn–5.5 wt.%Sb alloy: the dendritic region occurs for cooling rates < 0.9 K/s. • Sn–5.5 wt.%Sb alloy: tensile properties are improved with decreasing cellular spacing.

  5. Potential risk assessment in stream sediments, soils and waters after remediation in an abandoned W>Sn mine (NE Portugal).

    PubMed

    Antunes, I M H R; Gomes, M E P; Neiva, A M R; Carvalho, P C S; Santos, A C T

    2016-11-01

    The mining complex of Murçós belongs to the Terras de Cavaleiros Geopark, located in Trás-os-Montes region, northeast Portugal. A stockwork of NW-SE-trending W>Sn quartz veins intruded Silurian metamorphic rocks and a Variscan biotite granite. The mineralized veins contain mainly quartz, cassiterite, wolframite, scheelite, arsenopyrite, pyrite, sphalerite, chalcopyrite, galena, rare pyrrhotite, stannite, native bismuth and also later bismuthinite, matildite, joseite, roosveltite, anglesite, scorodite, zavaritskite and covellite. The exploitation produced 335t of a concentrate with 70% of W and 150t of another concentrate with 70% of Sn between 1948 and 1976. The exploitation took place mainly in four open pit mines as well as underground. Three lakes were left in the area. Remediation processes of confination and control of tailings and rejected materials and phytoremediation with macrophytes from three lakes were carried out between 2005 and 2007. Stream sediments, soils and water samples were collected in 2008 and 2009, after the remediation process. Most stream sediments showed deficiency or minimum enrichment for metals. The sequential enrichment factor in stream sediments W>Bi>As>U>Cd>Sn=Ag>Cu>Sb>Pb>Be>Zn is mainly associated with the W>Sn mineralizations. Stream sediments receiving drainage of a mine dump were found to be significantly to extremely enriched with W, while stream sediments and soils were found to be contaminated with As. Two soil samples collected around mine dumps and an open pit lake were also found to be contaminated with U. The waters from the Murçós W>Sn mine area were acidic to neutral. After the remediation, the surface waters were contaminated with F(-), Al, As, Mn and Ni and must not be used for human consumption, while open pit lake waters must also not be used for agriculture because of contamination with F(-), Al, Mn and Ni. In most waters, the As occurred as As (III), which is toxic and is easily mobilized in the drainage

  6. Potential risk assessment in stream sediments, soils and waters after remediation in an abandoned W>Sn mine (NE Portugal).

    PubMed

    Antunes, I M H R; Gomes, M E P; Neiva, A M R; Carvalho, P C S; Santos, A C T

    2016-11-01

    The mining complex of Murçós belongs to the Terras de Cavaleiros Geopark, located in Trás-os-Montes region, northeast Portugal. A stockwork of NW-SE-trending W>Sn quartz veins intruded Silurian metamorphic rocks and a Variscan biotite granite. The mineralized veins contain mainly quartz, cassiterite, wolframite, scheelite, arsenopyrite, pyrite, sphalerite, chalcopyrite, galena, rare pyrrhotite, stannite, native bismuth and also later bismuthinite, matildite, joseite, roosveltite, anglesite, scorodite, zavaritskite and covellite. The exploitation produced 335t of a concentrate with 70% of W and 150t of another concentrate with 70% of Sn between 1948 and 1976. The exploitation took place mainly in four open pit mines as well as underground. Three lakes were left in the area. Remediation processes of confination and control of tailings and rejected materials and phytoremediation with macrophytes from three lakes were carried out between 2005 and 2007. Stream sediments, soils and water samples were collected in 2008 and 2009, after the remediation process. Most stream sediments showed deficiency or minimum enrichment for metals. The sequential enrichment factor in stream sediments W>Bi>As>U>Cd>Sn=Ag>Cu>Sb>Pb>Be>Zn is mainly associated with the W>Sn mineralizations. Stream sediments receiving drainage of a mine dump were found to be significantly to extremely enriched with W, while stream sediments and soils were found to be contaminated with As. Two soil samples collected around mine dumps and an open pit lake were also found to be contaminated with U. The waters from the Murçós W>Sn mine area were acidic to neutral. After the remediation, the surface waters were contaminated with F(-), Al, As, Mn and Ni and must not be used for human consumption, while open pit lake waters must also not be used for agriculture because of contamination with F(-), Al, Mn and Ni. In most waters, the As occurred as As (III), which is toxic and is easily mobilized in the drainage

  7. Magnetic susceptibility of SnCr, SnMn, SnFe, SnCo and SnNi

    NASA Astrophysics Data System (ADS)

    Henger, U.; Korn, D.

    1984-11-01

    The initial ac susceptibility χ of vapour condensed Sn films with 3d transition metals is measured in situ. SnMn is a spin glass at concentrations up to 36 at% Mn. Spin glass behaviour in SnCr is only observed after annealing to temperatures between 220 and 300 K. This can be related to crystallization in the amorphous and disordered SnCr. SnFe and SnCo exhibit either temperature independent χ or χ below experimental detection. Above the percolation limit χ is getting large and temperature dependent. That is valid for Sn with 30 at% Fe or Co. In Sn films with 50 at% Ni the susceptibility is below the experimental limit.

  8. In Situ Electromigration in Cu-Sn and Ni-Sn Critical Solder Length for Three-Dimensional Integrated Circuits

    NASA Astrophysics Data System (ADS)

    Huang, Y. T.; Chen, C. H.; Lee, B. H.; Chen, H. C.; Wang, C. M.; Wu, Albert T.

    2016-09-01

    An in situ electromigration study has been conducted on U-groove Cu/Sn-3.5Ag/Cu and Ni/Sn-3.5Ag/Ni sandwich structures; the results were used to simulate microsolder joints passing current density of 1 × 104 A/cm2 at 150°C. The solder gap was only 15 μm, shorter than the critical length of Sn-3.5Ag solder. Backstress was proved to exist at critical solder lengths and to influence the electromigration mechanism. Theoretical calculations of the diffusivity of Cu and Ni in Sn solder indicated that the degree to which the dominant diffusion species (Cu or Ni atoms) diffused through the solder line is retarded by the backstress effect. The morphologies of intermetallic compounds (IMCs) were observed, and the grain boundaries in Sn solder were measured using electron backscatter diffraction to determine the kinetics of intermetallic growth. The results reveal that the unique electromigration characteristics of microbump joints, including the diffusivity, morphology, and backstress, can be determined. The retardation of atomic migration improves the reliability against electromigration.

  9. High-temperature thermoelectric studies of A {sub 11}Sb{sub 10} (A=Yb, Ca)

    SciTech Connect

    Brown, Shawna R.; Kauzlarich, Susan M. Gascoin, Franck; Jeffrey Snyder, G.

    2007-04-15

    Large samples (6-8 g) of Yb{sub 11}Sb{sub 10} and Ca{sub 11}Sb{sub 10} have been synthesized using a high-temperature (1275-1375 K) flux method. These compounds are isostructural to Ho{sub 11}Ge{sub 10}, crystallizing in the body-centered, tetragonal unit cell, space group I4/mmm, with Z=4. The structure consists of antimony dumbbells and squares, reminiscent of Zn{sub 4}Sb{sub 3} and filled Skutterudite (e.g., LaFe{sub 4}Sb{sub 12}) structures. In addition, these structures can be considered Zintl compounds; valence precise semiconductors with ionic contributions to the bonding. Differential scanning calorimetry (DSC), thermogravimetry (TG), resistivity ({rho}), Seebeck coefficient ({alpha}), thermal conductivity ({kappa}), and thermoelectric figure of merit (zT) from room temperature to at minimum 975 K are presented for A {sub 11}Sb{sub 10} (A=Yb, Ca). DSC/TG were measured to 1400 K and reveal the stability of these compounds to {approx}1200 K. Both A {sub 11}Sb{sub 10} (A=Yb, Ca) materials exhibit remarkably low lattice thermal conductivity ({approx}10 mW/cm K for both Yb{sub 11}Sb{sub 10} and Ca{sub 11}Sb{sub 10}) that can be attributed to the complex crystal structure. Yb{sub 11}Sb{sub 10} is a poor metal with relatively low resistivity (1.4 m{omega} cm at 300 K), while Ca{sub 11}Sb{sub 10} is a semiconductor suggesting that a gradual metal-insulator transition may be possible from a Ca{sub 11-} {sub x} Yb {sub x} Sb{sub 10} solid solution. The low values and the temperature dependence of the Seebeck coefficients for both compounds suggest that bipolar conduction produces a compensated Seebeck coefficient and consequently a low zT. - Graphical abstract: Large samples (6-8 g) of Yb{sub 11}Sb{sub 10} and Ca{sub 11}Sb{sub 10} have been synthesized from a Sn-flux method. Thermoelectric measurements from room temperature to 1075 K have been obtained. Both A {sub 11}Sb{sub 10} (A=Yb, Ca) materials exhibit remarkably low lattice thermal conductivity ({approx}10 m

  10. Solution-Processed hybrid Sb2 S3 planar heterojunction solar cell

    NASA Astrophysics Data System (ADS)

    Huang, Wenxiao; Borazan, Ismail; Carroll, David

    Thin-film solar cells based on inorganic absorbers permit a high efficiency and stability. Among or those absorber candidates, recently Sb2S3 has attracted extensive attention because of its suitable band gap (1.5eV ~1.7 eV) , strong optical absorption, low-cost and earth-abundant constituents. Currently high-efficiency Sb2S3 solar cells have absorber layer deposited on nanostructured TiO2 electrodes in combination with organic hole transport material (HTM) on top. However it's challenging to fill the nanostructured TiO2 layer with Sb2S3 and subsequently by HTM, this leads to uncovered surface permits charge recombination. And the existing of Sb2S3/TiO2/HTM triple interface will enhance the recombination due to the surface trap state. Therefore, a planar junction cell would not only have simpler structure with less steps to fabricate but also ideally also have a higher open circuit voltage because of less interface carrier recombination. By far there is limited research focusing on planar Sb2S3 solar cell, so the feasibility is still unclear. Here, we developed a low-toxic solution method to fabricate Sb2S3 thin film solar cell, then we studied the morphology of the Sb2S3 layer and its impact to the device performance. The best device with a structure of FTO/TiO2/Sb2S3/P3HT/Ag has PCE over 5% which is similar or higher than yet the best nanostructure devices with the same HTM. Furthermore, based on solution engineering and surface modification, we improved the Sb2S3 film quality and achieved a record PCE. .

  11. Energy level alignments at the interface of N,N'-bis-(1-naphthyl)-N,N'-diphenyl-1,1‧-biphenyl-4,4‧-diamine (NPB)/Ag-doped In2O3 and NPB/Sn-doped In2O3

    NASA Astrophysics Data System (ADS)

    Jung, Kwanwook; Park, Soohyung; Lee, Younjoo; Youn, Yungsik; Shin, Hae-In; Kim, Han-Ki; Lee, Hyunbok; Yi, Yeonjin

    2016-11-01

    The electronic structures of Ag-doped In2O3 (IAgO) and its energy level alignments with a N,N'-bis-(1-naphthyl)-N,N'-diphenyl-1,1‧-biphenyl-4,4‧-diamine (NPB) hole transport layer (HTL) were investigated using in situ ultraviolet and X-ray photoelectron spectroscopies (UPS and XPS). As compared to the conventional Sn-doped In2O3 (ITO), IAgO has less oxygen vacancies leading to a higher work function (WF). The lower hole injection barrier (Φh) from IAgO to a NPB HTL is observed, which is attributed mainly to its higher WF and interface dipoles. The UPS measurements reveal that the Φh is 0.87 eV at NPB/IAgO while 1.11 eV is at NPB/ITO. Therefore, IAgO could be an alternative transparent anode in organic optoelectronics.

  12. Development of high strength Sn-Mg solder alloys with reasonable ductility

    NASA Astrophysics Data System (ADS)

    Alam, Md Ershadul; Gupta, Manoj

    2013-09-01

    This study discussed the development of a series of new lead-free Sn-Mg solders by incorporating varying amounts of Mg (0.8, 1.5 and 2.5 wt. %) into pure Sn using disintegrated melt deposition technique followed by room temperature extrusion. All extruded Sn and Sn-Mg solder samples were characterized. Microstructural characterization studies revealed equiaxed grain morphology, minimal porosity and relatively uniform distribution of secondary phase. Better coefficient of thermal expansion was observed for Sn-2.5Mg sample when compared to conventional Sn-37Pb solder. Melting temperature of Sn-1.5Mg was found to be 212°C which is much lower than the conventional Sn-Ag-Cu or Sn-Cu (227°C) solders. Microhardness was increased with increasing amount of Mg in pure Sn. Room temperature tensile test results revealed that newly developed Sn-Mg solders exhibit enhanced strengths (0.2% yield strength and ultimate tensile strength) with comparable (if not better) ductility when compared to other commercially available and widely used Sn-based solder alloys.

  13. DWPF SB6 INITIAL CPC FLOWSHEET TESTING SB6-1 TO SB6-4L TESTS OF SB6-A AND SB6-B SIMULANTS

    SciTech Connect

    Lambert, D.; Pickenheim, B.; Best, D.

    2009-09-09

    The Defense Waste Processing Facility (DWPF) will transition from Sludge Batch 5 (SB5) processing to Sludge Batch 6 (SB6) processing in late fiscal year 2010. Tests were conducted using non-radioactive simulants of the expected SB6 composition to determine the impact of varying the acid stoichiometry during the Sludge Receipt and Adjustment Tank (SRAT) and Slurry Mix Evaporator (SME) processes. The work was conducted to meet the Technical Task Request (TTR) HLW/DWPF/TTR-2008-0043, Rev.0 and followed the guidelines of a Task Technical and Quality Assurance Plan (TT&QAP). The flowsheet studies are performed to evaluate the potential chemical processing issues, hydrogen generation rates, and process slurry rheological properties as a function of acid stoichiometry. These studies were conducted with the estimated SB6 composition at the time of the study. This composition assumed a blend of 101,085 kg of Tank 4 insoluble solids and 179,000 kg of Tank 12 insoluble solids. The current plans are to subject Tank 12 sludge to aluminum dissolution. Liquid Waste Operations assumed that 75% of the aluminum would be dissolved during this process. After dissolution and blending of Tank 4 sludge slurry, plans included washing the contents of Tank 51 to {approx}1M Na. After the completion of washing, the plan assumes that 40 inches on Tank 40 slurry would remain for blending with the qualified SB6 material. There are several parameters that are noteworthy concerning SB6 sludge: (1) This is the second batch DWPF will be processing that contains sludge that has had a significant fraction of aluminum removed through aluminum dissolution; (2) The sludge is high in mercury, but the projected concentration is lower than SB5; (3) The sludge is high in noble metals, but the projected concentrations are lower than SB5; and(4) The sludge is high in U and Pu - components that are not added in sludge simulants. Six DWPF process simulations were completed in 4-L laboratory-scale equipment using

  14. Preparation and oxidation resistance of single crystalline β-Zn4Sb3

    NASA Astrophysics Data System (ADS)

    Liu, Hong-xia; Deng, Shu-ping; Li, De-cong; Shen, Lan-xian; Cheng, Feng; Wang, Jin-song; Deng, Shu-kang

    2016-11-01

    This study prepared a Zn-rich single crystal β-Zn4Sb3 using a Sn flux method based on the stoichiometric ratios of Zn4.4Sb3Sn3. The oxidation resistance of the sample was determined by exploring the effects of heat treatment in air on electrical transport properties and thermal stability, which is of practical importance in the application of the material at high temperatures. Results showed that the prepared sample possessed high electrical transport properties, with a high power factor of 1.67×10-3 W m-1 K-2 at 563 K. The heat treatment in air weakened the electrical conductivity of the single crystalline β-Zn4Sb3, whereas the Seebeck coefficients were rarely independent of the annealing condition. Eventually, the power factor obtained after the first heating at 523 K for 4 h became comparable to that of the as-prepared sample, although it decreased after the second heating at 573 K for 5 h. Nevertheless, the single crystalline β-Zn4Sb3 still possessed a good thermal stability after the heat treatment process.

  15. Solution-processed solar cells based on environmentally friendly AgBiS2 nanocrystals

    NASA Astrophysics Data System (ADS)

    Bernechea, María; Miller, Nichole Cates; Xercavins, Guillem; So, David; Stavrinadis, Alexandros; Konstantatos, Gerasimos

    2016-08-01

    Solution-processed inorganic solar cells are a promising low-cost alternative to first-generation solar cells. Solution processing at low temperatures combined with the use of non-toxic and abundant elements can help minimize fabrication costs and facilitate regulatory acceptance. However, at present, there is no material that exhibits all these features while demonstrating promising efficiencies. Many of the candidates being explored contain toxic elements such as lead or cadmium (perovskites, PbS, CdTe and CdS(Se)) or scarce elements such as tellurium or indium (CdTe and CIGS(Se)/CIS). Others require high-temperature processes such as selenization or sintering, or rely on vacuum deposition techniques (Sb2S(Se)3, SnS and CZTS(Se)). Here, we present AgBiS2 nanocrystals as a non-toxic, earth-abundant material for high-performance, solution-processed solar cells fabricated under ambient conditions at low temperatures (≤100 °C). We demonstrate devices with a certified power conversion efficiency of 6.3%, with no hysteresis and a short-circuit current density of ˜22 mA cm-2 for an active layer thickness of only ˜35 nm.

  16. Solution-processed solar cells based on environmentally friendly AgBiS2 nanocrystals

    NASA Astrophysics Data System (ADS)

    Bernechea, María; Miller, Nichole Cates; Xercavins, Guillem; So, David; Stavrinadis, Alexandros; Konstantatos, Gerasimos

    2016-08-01

    Solution-processed inorganic solar cells are a promising low-cost alternative to first-generation solar cells. Solution processing at low temperatures combined with the use of non-toxic and abundant elements can help minimize fabrication costs and facilitate regulatory acceptance. However, at present, there is no material that exhibits all these features while demonstrating promising efficiencies. Many of the candidates being explored contain toxic elements such as lead or cadmium (perovskites, PbS, CdTe and CdS(Se)) or scarce elements such as tellurium or indium (CdTe and CIGS(Se)/CIS). Others require high-temperature processes such as selenization or sintering, or rely on vacuum deposition techniques (Sb2S(Se)3, SnS and CZTS(Se)). Here, we present AgBiS2 nanocrystals as a non-toxic, earth-abundant material for high-performance, solution-processed solar cells fabricated under ambient conditions at low temperatures (≤100 °C). We demonstrate devices with a certified power conversion efficiency of 6.3%, with no hysteresis and a short-circuit current density of ∼22 mA cm‑2 for an active layer thickness of only ∼35 nm.

  17. [Sb4Au4Sb4](2-): A designer all-metal aromatic sandwich.

    PubMed

    Tian, Wen-Juan; Guo, Jin-Chang; Li, Da-Zhi; You, Xue-Rui; Wang, Ying-Jin; Sun, Zhong-Ming; Zhai, Hua-Jin

    2016-07-28

    We report on the computational design of an all-metal aromatic sandwich, [Sb4Au4Sb4](2-). The triple-layered, square-prismatic sandwich complex is the global minimum of the system from Coalescence Kick and Minima Hopping structural searches. Following a standard, qualitative chemical bonding analysis via canonical molecular orbitals, the sandwich complex can be formally described as [Sb4](+)[Au4](4-)[Sb4](+), showing ionic bonding characters with electron transfers in between the Sb4/Au4/Sb4 layers. For an in-depth understanding of the system, one needs to go beyond the above picture. Significant Sb → Au donation and Sb ← Au back-donation occur, redistributing electrons from the Sb4/Au4/Sb4 layers to the interlayer Sb-Au-Sb edges, which effectively lead to four Sb-Au-Sb three-center two-electron bonds. The complex is a system with 30 valence electrons, excluding the Sb 5s and Au 5d lone-pairs. The two [Sb4](+) ligands constitute an unusual three-fold (π and σ) aromatic system with all 22 electrons being delocalized. An energy gap of ∼1.6 eV is predicted for this all-metal sandwich. The complex is a rare example for rational design of cluster compounds and invites forth-coming synthetic efforts. PMID:27475362

  18. [Sb4Au4Sb4]2-: A designer all-metal aromatic sandwich

    NASA Astrophysics Data System (ADS)

    Tian, Wen-Juan; Guo, Jin-Chang; Li, Da-Zhi; You, Xue-Rui; Wang, Ying-Jin; Sun, Zhong-Ming; Zhai, Hua-Jin

    2016-07-01

    We report on the computational design of an all-metal aromatic sandwich, [Sb4Au4Sb4]2-. The triple-layered, square-prismatic sandwich complex is the global minimum of the system from Coalescence Kick and Minima Hopping structural searches. Following a standard, qualitative chemical bonding analysis via canonical molecular orbitals, the sandwich complex can be formally described as [Sb4]+[Au4]4-[Sb4]+, showing ionic bonding characters with electron transfers in between the Sb4/Au4/Sb4 layers. For an in-depth understanding of the system, one needs to go beyond the above picture. Significant Sb → Au donation and Sb ← Au back-donation occur, redistributing electrons from the Sb4/Au4/Sb4 layers to the interlayer Sb-Au-Sb edges, which effectively lead to four Sb-Au-Sb three-center two-electron bonds. The complex is a system with 30 valence electrons, excluding the Sb 5s and Au 5d lone-pairs. The two [Sb4]+ ligands constitute an unusual three-fold (π and σ) aromatic system with all 22 electrons being delocalized. An energy gap of ˜1.6 eV is predicted for this all-metal sandwich. The complex is a rare example for rational design of cluster compounds and invites forth-coming synthetic efforts.

  19. Interaction of Sn atoms with defects introduced by ion implantation in Ge substrate

    SciTech Connect

    Taoka, Noriyuki Fukudome, Motoshi; Takeuchi, Wakana; Arahira, Takamitsu; Sakashita, Mitsuo; Nakatsuka, Osamu; Zaima, Shigeaki

    2014-05-07

    The interaction of Sn atoms with defects induced by Sn implantation of Ge substrates with antimony (Sb) as an n-type dopant and the impact of H{sub 2} annealing on these defects were investigated by comparison with defects induced by Ge self-implantation. In the Ge samples implanted with either Sn or Ge, and annealed at temperatures of less than 200 °C, divacancies, Sb-vacancy complexes with single or double acceptor-like states, and defects related to Sb and interstitial Ge atoms were present. On the other hand, after annealing at 500 °C in an N{sub 2} or H{sub 2} atmosphere, defects with different structures were observed in the Sn-implanted samples by deep level transition spectroscopy. The energy levels of the defects were 0.33 eV from the conduction band minimum and 0.55 eV from the valence band maximum. From the capacitance-voltage (C-V) characteristics, interaction between Sn atoms and defects after annealing at 500 °C was observed. The effect of H{sub 2} annealing at around 200 °C was observed in the C-V characteristics, which can be attributed to hydrogen passivation, and this effect was observed in both the Ge- and Sn-implanted samples. These results suggest the presence of defects that interact with Sn or hydrogen atoms. This indicates the possibility of defect control in Ge substrates by Sn or hydrogen incorporation. Such defect control could yield high-performance Ge-based devices.

  20. Carbonate-replacement Pb-Zn-Ag ± Au mineralization in the Kamariza area, Lavrion, Greece: Mineralogy and thermochemical conditions of formation

    NASA Astrophysics Data System (ADS)

    Voudouris, P.; Melfos, V.; Spry, P. G.; Bonsall, T. A.; Tarkian, M.; Solomos, Ch.

    2008-09-01

    Carbonate-replacement Pb-Zn-Ag ± Au deposits in the Kamariza area, Lavrion district, Attica, Greece, are genetically related to the emplacement of Miocene andesitic dikes within a rapidly extending continental back-arc basin, which formed during exhumation of the Attic-Cycladic Crystalline Belt. Replacement veins as well as chimneys and mantos of massive sulfides are the major orebody types with mantos grading into chimneys and veins. Ore minerals are similar among the various types of orebodies in the Kamariza area and consist of sulfides and sulfarsenides (pyrite, arsenopyrite, chalcopyrite, galena, sphalerite, gersdorffite, marcasite), native metals (Au and Bi), Sn-bearing phases (petrukite), sulfosalts and sulfbismuthites of Ag, Bi, Cu, Pb, As, Sb (tetrahedrite-group minerals, bournonite, boulangerite, stephanite, pyrargyrite, semseyite, enargite, bismuthinite, lillianite homologues, Cu-matildite, aikinite, Ag-aikinite, mummeite, emplectite, wittichenite). The elemental association of Bi, Au, and Ag is common. The assemblages gersdorffite-bismuthinite-native gold and native gold-native bismuth are evidence for a contribution of magmatic components to the hydrothermal system. A fluctuation in the sulfidation states of the ore fluid during the evolution of the Kamariza system is evident from the deposition of early arsenopyrite, as well as of enargite-luzonite and both low-Fe and Fe-rich sphalerite in the same samples. Microthermometry of fluid inclusion assemblages show that carbonate replacement mineralization was deposited from a warm to hot (100°C to 400°C), low to moderately saline (1.8 to 17.3 wt% NaCl equiv) fluid. Eutectic temperatures of fluid inclusions as low as -55°C suggest the presence of CaCl2 in addition to NaCl, in the ore fluid. The Kamariza deposit occurs distal to the Plaka granodiorite intrusion and the associated porphyry-Mo mineralization, but is likely to be genetically related to a granitoid buried at depth.

  1. Enhanced thermoelectric properties of n-type NbCoSn half-Heusler by improving phase purity

    NASA Astrophysics Data System (ADS)

    He, Ran; Huang, Lihong; Wang, Yumei; Samsonidze, Georgy; Kozinsky, Boris; Zhang, Qinyong; Ren, Zhifeng

    2016-10-01

    Here we report the thermoelectric properties of NbCoSn-based n-type half-Heuslers (HHs) that were obtained through arc melting, ball milling, and hot pressing process. With 10% Sb substitution at the Sn site, we obtained enhanced n-type properties with a maximum power factor reaching ˜35 μW cm-1 K-2 and figure of merit (ZT) value ˜0.6 in NbCoSn0.9Sb0.1. The ZT is doubled compared to the previous report. In addition, the specific power cost ( W-1) is decreased by ˜68% comparing to HfNiSn-based n-type HH because of the elimination of Hf.

  2. AGS II

    SciTech Connect

    Palmer, R.B.

    1984-01-01

    Interest in rare K decays, neutrino oscillations and other fields have generated an increasing demand for running, and improved intensity and duty cycle, at the AGS. Current projects include acceleration of polarized protons and light ions (up to mass 32). Future plans are for a booster to increase intensity and allow heavy ions (up to mass 200), and a stretcher to give 100% duty cycle. A later upgrade could yield an average current of 32 ..mu.. amps. 6 figures, 2 tables.

  3. Controlled fabrication of Sn/TiO2 nanorods for photoelectrochemical water splitting

    PubMed Central

    2013-01-01

    In this work, we investigate the controlled fabrication of Sn-doped TiO2 nanorods (Sn/TiO2 NRs) for photoelectrochemical water splitting. Sn is incorporated into the rutile TiO2 nanorods with Sn/Ti molar ratios ranging from 0% to 3% by a simple solvothermal synthesis method. The obtained Sn/TiO2 NRs are single crystalline with a rutile structure. The concentration of Sn in the final nanorods can be well controlled by adjusting the molar ratio of the precursors. Photoelectrochemical experiments are conducted to explore the photocatalytic activity of Sn/TiO2 NRs with different doping levels. Under the illumination of solar simulator with the light intensity of 100 mW/cm2, our measurements reveal that the photocurrent increases with increasing doping level and reaches the maximum value of 1.01 mA/cm2 at −0.4 V versus Ag/AgCl, which corresponds to up to about 50% enhancement compared with the pristine TiO2 NRs. The Mott-Schottky plots indicate that incorporation of Sn into TiO2 nanorod can significantly increase the charge carrier density, leading to enhanced conductivity of the nanorod. Furthermore, we demonstrate that Sn/TiO2 NRs can be a promising candidate for photoanode in photoelectrochemical water splitting because of their excellent chemical stability. PMID:24191909

  4. Thermodynamics of Ti in Ag-Cu alloys

    NASA Astrophysics Data System (ADS)

    Pak, J. J.; Santella, M. L.; Fruehan, R. J.

    1990-04-01

    The thermodynamic activities of Ti at dilution in a series of Ag-Cu alloys and eutectic Ag-Cu alloys containing In or Sn were measured using a galvanic cell technique employing a ThO2-8 pct Y2O3 electrolyte. The equilibrium oxide phase formed by the reaction of Ti (XTi > 0.004) in the Ag-Cu alloy melts with an A12O3 or ZrO2 crucible was Ti2O (s). The free energy of formation of Ti2O (s) was estimated from available thermodynamic data. Titanium activities were calculated from measured oxygen potentials and the free energy of formation of Ti2O (s). Titanium in the eutectic Ag-Cu melt showed a positive deviation from ideal solution behavior at 1000°C, and its activity coefficient at infinite dilution was about 6.5 relative to pure solid Ti. Indium and Sn did not increase the activity coefficient of Ti in eutectic Ag-Cu melts. Silver increased the Ti activity coefficient in the Ag-Cu-Ti melts significantly. The Ti activity coefficient value in liquid Ag was about 20 times higher than in eutectic Ag-Cu melt at 1000 °C.

  5. Technological approach of 1-O-alkyl-sn-glycerols separation from Berryteuthis magister squid liver oil.

    PubMed

    Ermolenko, Ekaterina; Latyshev, Nikolay; Sultanov, Ruslan; Kasyanov, Sergey

    2016-03-01

    Biological active compounds, 1-O-alkyl-sn-glycerols (AG), were isolated from liver oil of the squid Berryteuthis magister. The main components of the initial lipids were 1-O-alkyl-2,3-diacyl-sn-glycerols (38.50 %) and triacylglycerols (24.26 %). The first step of separation was the alkaline hydrolysis of oil to form a lipid mixture consisting of AG, free fatty acids and cholesterol. AG were separated by double recrystallization from acetone at -20 °C and 1 °C. A simple procedure is proposed for obtaining AG with a purity of 99.22 %, the main component of which is chimyl alcohol (94.39 %). Purity and structure of the obtained products were confirmed by GC and GC-MS technique. Isolated AG may be used in nutrition and cosmetics. PMID:27570298

  6. Catalytic and photoelectrochemical performances of Cu-Zn-Sn-Se thin films prepared using selenization of electrodeposited Cu-Zn-Sn metal precursors

    NASA Astrophysics Data System (ADS)

    Shao, Pin-Wen; Li, Chun-Ting; Ho, Kuo-Chuan; Cheng, Kong-Wei

    2015-07-01

    In this study, Cu2ZnSnSe4 (CZTSe) films are deposited onto the fluorine-doped-tin-oxide-coated glass substrate via the selenization of electrodeposited Cu-Zn-Sn metal precursors in an acidic solution with the applied potential of -0.9 V vs. an Ag/AgCl electrode. X-ray diffraction patterns reveal that the samples are the quaternary tetragonal CZTSe phase. The thicknesses and direct band gaps of the samples are in the ranges of 2.3 to 2.7 μm and 0.95 to 1.02 eV, respectively. All samples are p-type semiconductors with carrier density, mobility and flat-band potential in the ranges of 3.88 × 1017 to 1.37 × 1018 cm-3, 10.31 to 12.6 cm2 V-1 s-1 and -0.01 V to -0.08 V vs. Ag/AgCl reference electrode, respectively. The sample with [Cu]/[Zn + Sn] and [Zn]/[Sn] molar ratios of 0.87 and 0.66, respectively, has a maximum photo-enhanced current density of 0.41 mA cm-2 at an applied bias of -0.5 V vs. an Ag/AgCl electrode in 0.5 M H2SO4 solution under illumination. The best photo-conversion efficiency of dye-sensitized solar cells using CZTSe with [Cu]/[Zn + Sn] and [Zn]/[Sn] molar ratios of 0.87 and 0.66, respectively, as the counter electrode was 7.98%. The results show the high quality CZTSe films have potentials in applications of photoelectrochemical water splitting and dye-sensitized solar cells.

  7. Synthesis and Raman analysis of SnS nanoparticles synthesized by PVP assisted polyol method

    NASA Astrophysics Data System (ADS)

    Baby, Benjamin Hudson; Mohan, D. Bharathi

    2015-06-01

    SnS film was prepared by a simple drop casting method after synthesizing SnS nanoparticles by using PVP assisted polyol method. Confocal Raman study was carried out for the as deposited and annealed (150, 300 and 400 °C) films at two different excitation wavelengths 514 and 785 nm. At the excitation wavelength of 514 nm, the Raman modes showed for a mixed phase of SnS and SnS2 up to 150 °C and then only a pure SnS phase was observed up to 400 °C due to the dissociation of SnS2 in to SnS by releasing S. The increase in intensity of Raman (Ag and B3g) as well as IR (B3u) active modes of SnS are observed with increasing annealing temperature at excitation wavelength 785 nm due to the increased crystallinity and inactiveness of SnS2 modes. X-ray diffraction confirming the formation of a single phase of SnS while the greater homogeneity in both size and shape of SnS nanoparticles were confirmed through surface morphology from SEM.

  8. Sign of the electric-field gradient at /sup 111/Cd in Zr and Sb

    SciTech Connect

    Kaufmann, E.N.; Krien, K.; Pielen, W.; Vianden, R.

    1983-01-01

    The ..beta..-..gamma.. TDPAC technique was applied to /sup 111/Ag implanted in Zr and Sb metal single crystals in order to determine sign and magnitude of the quadrupole interaction at the site of /sup 111/Cd in these metals. An analysis of the data taken at 293K yielded nu/sub Q/ = +15.4(6) MHz for /sup 111/Cd in Zr and nu/sub Q/ = -107.5(20) MHz for /sup 111/Cd in Sb. From these values electric field gradients of +7.3(8)x10/sup 16/ V/cm/sup 2/ and -5.56(62)x10/sup 17/ V/cm/sup 2/ for Cd in Zr and Sb are derived respectively.

  9. BaCdSnS4 and Ba3CdSn2S8: syntheses, structures, and non-linear optical and photoluminescence properties.

    PubMed

    Zhen, Ni; Wu, Kui; Wang, Ying; Li, Qiang; Gao, Wenhui; Hou, Dianwei; Yang, Zhihua; Jiang, Huaidong; Dong, Yongjun; Pan, Shilie

    2016-06-28

    Two non-centrosymmetric metal chalcogenides, BaCdSnS4 and Ba3CdSn2S8, were synthesized using a high temperature solid-state reaction in an evacuated silica tube. Although the two compounds have the same building units in their structures, namely CdS4, SnS4 and BaS8 units, both of them have different structures. BaCdSnS4 crystallizes in the orthorhombic space group Fdd2 and its structure can be characterized by the two-dimensional ∞[Cd-Sn-S] layers composed of corner- and edge-sharing CdS4 and SnS4 tetrahedra with Ba atoms located between the two adjacent ∞[Cd-Sn-S] layers. Ba3CdSn2S8 crystallizes in the space group I4[combining macron]3d of the orthorhombic system and the CdS4 and SnS4 groups are connected with each other via corner-sharing to form a three-dimensional framework, which is different from the 2D ∞[Cd-Sn-S] layer structure in BaCdSnS4. The UV-vis-NIR diffuse-reflectance spectra show that the experimental band gaps are about 2.30 eV for BaCdSnS4 and 2.75 eV for Ba3CdSn2S8, respectively. IR and Raman measurement results indicate that their transparent ranges are up to 25 μm. Second-order NLO measurements show that BaCdSnS4 exhibits strong powder second-harmonic generation (SHG) intensities at 2.09 μm laser pumping that are ∼5 and 0.7 times that of AgGaS2 in the particle size 38-55 and 150-200 μm, respectively, whereas Ba3CdSn2S8 only exhibits SHG intensities of about 0.8 and 0.1 times that of AgGaS2 at the same particle sizes. The origin of the NLO response in BaCdSnS4 may originate from the macroscopic arrangement of the SnS4 and CdS4 tetrahedra. Furthermore, the photoluminescence properties of the two compounds have also been investigated and show obvious blue and green light emission. PMID:27272926

  10. Synthesis and Optimization of Thermoelectric Properties of Zn(x)Sb3

    NASA Technical Reports Server (NTRS)

    Doan-Nguyen, Vicky V.

    2005-01-01

    High-performance thermoelectric materials are studied to investigate their abilities to optimize electrical and minimize thermal conductivities. A stoichiometric range of p-type zinc antimonide compounds was synthesized to analyze the trends in their thermoelectric properties. Zn(x)Sb3 (x=3.80, 3.85, 3.90, 3.95, 4.00, 4.05, 4.10) was reacted at 750 C and annealed at 300 C for 24 hours at each temperature. Electronic transport properties such as Seebeck and Hall Effect were measured to analyze possible trends in the set of compositions. SEM, EDS, and XRD were used to quantify both ingots and hot-pressed samples to confirm that they were single-phase and of the expected stoichiometries. Recent SEM data indicated that Zn(3.90)Sb3 and Zn(4.00)Sb3 samples were actually Zn3Sb2. In hopes of further improving the figure-of-merit (ZT) of the binary system, V, Cr, Mn, Fe, Co, In, and Sn were used to dope (Zn(0.95)M(0.05))(3.95)Sb3.

  11. Nanostructured rocksalt-type solid solution series (Ge1-xSnxTe)nSb2Te3 (n=4, 7, 12; 0≤x≤1): Thermal behavior and thermoelectric properties

    NASA Astrophysics Data System (ADS)

    Rosenthal, Tobias; Neudert, Lukas; Ganter, Pirmin; de Boor, Johannes; Stiewe, Christian; Oeckler, Oliver

    2014-07-01

    Solid solutions (Ge1-xSnxTe)nSb2Te3 (n=4, 7, 12; 0≤x≤1) represent stable high-temperature phases and can be obtained as metastable compounds by quenching. High-resolution transmission electron microscopy reveals that the quenched (pseudo-)cubic materials exhibit parquet-like nanostructures comparable to, but especially for n=4 more pronounced than in (GeTe)nSb2Te3 (GST materials). The temperature-dependent phase transitions are comparable; however, substitution with Sn significantly lowers the transition temperatures between cubic high-temperature phase and the long range ordered layered phases that are stable at ambient conditions. In addition, the metrics of the quenched Sn-containing materials remains closer to cubic, especially for samples with n=7 or 12. For samples with high defect concentrations (n=4, 7), Sn-substituted samples exhibit electrical conductivities up to 3 times higher than those of corresponding GST materials. Since the difference in thermal conductivity is much less pronounced, this results in a doubling of the thermoelectric figure of merit (ZT) at high temperatures for (Ge0.5Sn0.5Te)4Sb2Te3 as compared to (GeTe)4Sb2Te3. Sn doping in (GeTe)7Sb2Te3 increases the ZT value by a factor of up to 4 which is also due to an increased Seebeck coefficient.

  12. MOVPE of GaSb/InGaAsSb Multilayers and Fabrication of Dual Band Photodetectors

    NASA Technical Reports Server (NTRS)

    Xiao, Ye-Gao; Bhat, Ishwara; Refaat, Tamer F.; Abedin, M. Nurul; Shao, Qing-Hui

    2005-01-01

    Metalorganic vapor phase epitaxy (MOVPE) of GaSb/InGaAsSb multilayer thin films and fabrication of bias-selectable dual band photodetectors are reported. For the dual band photodetectors the short wavelength detector, or the upper p- GaSb/n-GaSb junction photodiode, is placed optically ahead of the long wavelength one, or the lower photodiode. The latter is based on latticed-matched In0.13Ga0.87As0.11Sb0.89 with bandgap near 0.6 eV. Specifically, high quality multilayer thin films are grown sequentially from top to bottom as p+-GaSb/p-GaSb/n-GaSb/n-InGaAsSb/p-InGaAsSb/p-GaSb on undoped p-type GaSb substrate, and as n-GaSb/p-GaSb/p-InGaAsSb/n-InGaAsSb/n-GaSb on Te-doped n-type GaSb substrate respectively. The multilayer thin films are characterized by optical microscope, atomic force microscope (AFM), electron microprobe analyses etc. The photodiode mesa steps are patterned by photolithography with wet chemical etching and the front metallization is carried out by e-beam evaporation with Pd/Ge/Au/Ti/Au to give ohmic contact on both n- and p-type Sb based layer surfaces. Dark I-V measurements show typical diode behavior for both the upper and lower photodiodes. The photoresponsivity measurements indicate that both the upper and lower photodiodes can sense the infrared illumination corresponding to their cutoff wavelengths respectively, comparable with the simulation results. More work is underway to bring the long wavelength band to the medium infrared wavelength region near 4 micrometers.

  13. Electronic structures and formation energies of pentavalent-ion-doped SnO2: First-principles hybrid functional calculations

    NASA Astrophysics Data System (ADS)

    Behtash, Maziar; Joo, Paul H.; Nazir, Safdar; Yang, Kesong

    2015-05-01

    We studied the electronic properties and relative thermodynamic stability of several pentavalent-ion (Ta, Nb, P, Sb, and I) doped SnO2 systems using first-principles hybrid density functional theory calculations, in order to evaluate their potential as transparent conducting oxides (TCOs). I-doped SnO2, though conductive, shows a narrowed optical band gap with respect to the undoped system due to the formation of gap states above the valence band. Nb-doped SnO2 forms localized impurity states below the conduction band bottom, suggesting that the Nb dopant exists as an Nb4+-like cation, which is consistent with the recent experimental finding of the formation of the impurity level below the conduction band bottom [Appl. Phys. Express 5, 061201 (2012)]. Ta- and Sb-doped SnO2 display n-type conductivity, high charge carrier density, and widened optical band gap. P-doped SnO2 shows similar n-type electronic properties with that of Sb- and Ta-doped systems, and thus P-doped SnO2 is proposed as a promising candidate TCO for further experimental validation.

  14. Amiloride and SN-6 Suppress Audiogenic Seizure Susceptibility in Genetically Epilepsy-Prone Rats

    PubMed Central

    Quansah, Hillary; N’Gouemo, Prosper

    2015-01-01

    SUMMARY Aims We have recently reported that amiloride, a potent and nonselective blocker of acid-sensing ion channels, prevents the development of pilocarpine-induced seizures and status epilepticus. Amiloride is also known to suppress the activity of Na+/Ca2+ and Na+/H+ exchangers that have been implicated in the pathophysiology of seizures. Here, we evaluated the effects of amiloride, SN-6 (a potent blocker of Na+/Ca2+ exchangers) and zoniporide (a potent blocker of Na+/H+ exchangers) on acoustically evoked seizures (audiogenic seizures, AGS) in genetically epilepsy-prone rats (GEPR-3s), a model of inherited generalized epilepsy. Methods Male, six-week-old GEPR-3s were used. The GEPR-3s were tested for AGS susceptibility before and after treatment with various doses of amiloride, SN-6, and zoniporide (1, 3, 10, and 30 mg/kg; per os). Results We found that pretreatment with amiloride and SN-6 markedly reduced the incidence and severity of AGS in the GEPR-3s. In contrast, administration of zoniporide only minimally reduced the incidence and severity of AGS in the GEPR-3s. A combination of noneffective doses of SN-6 and zoniporide also suppressed AGS susceptibility in the GEPR-3s. Conclusions These findings suggest acid-sensing ion channels and the Na+/Ca2+ exchanger may play an important role in the pathophysiology of inherited AGS susceptibility in the GEPR-3s. PMID:24948133

  15. Optical properties of SbSI heterostructures

    NASA Astrophysics Data System (ADS)

    Toroń, B.; Nowak, M.; Grabowski, A.; Kepńiska, M.; Szala, J.; Rzychoń, T.

    2012-10-01

    The antimony sulfoiodide (SbSI) single crystal being a ferroelectric semiconductor has a large number of interesting properties. Based on SbSI single crystal a new type of heterostructures has been produced. For the first time diodes, transistors and thyristors composed of SbSI/Sb2S3 heterojunctions have been fabricated by CO2 laser irradiation of selected sections of SbSI single crystals. Treated sections are composed of amorphous antimony (III) sulphide (Sb2S3) with energy gap 0.3 eV smaller (in room temperature) than that of SbSI. The structural optical, electrical and photoelectrical characteristics of produced devices have been investigated.

  16. Impurity lattice sites after implantation of Te and Sb in GaAs: Search for the DX centre

    NASA Astrophysics Data System (ADS)

    Zhang, G. L.; Mo, D.; Liang, Z. N.; Niesen, L.

    1990-07-01

    119Sn Mössbauer Spectroscopy has been applied to study the nearest environment of radioactive119mTe and119Sb atoms implanted into GaAs. After a low-dose implantation and annealing above 300°C the impurity atoms are found at As sites. High-dose implantation and annealing above 600°C results in the population of at least two additional sites; these are clearly different for Te and Sb. No evidence is found for the population of DX-centres. A likely possibility is the formation of coherent Ga2Te3 precipitates.

  17. Effects of Sc and Y substitution on the structure and thermoelectric properties of Yb14MnSb11

    NASA Astrophysics Data System (ADS)

    Grebenkemper, Jason H.; Klemenz, Sebastian; Albert, Barbara; Bux, Sabah K.; Kauzlarich, Susan M.

    2016-10-01

    Yb14MnSb11 is the most efficient bulk p-type thermoelectric material for high temperature applications. Materials with Y and Sc substitutions in Yb14MnSb11 were made both in Sn-flux and by ball milling. These small 3+ rare earth (RE) cations were introduced with the goal of providing chemical pressure on the structure. The RE3+ cation is smaller than Yb2+ and also donates one additional electron to this p-type semiconductor. In Yb14-xRExMnSb11 (RE = Sc, Y) the maximum x was about 0.5. X-ray diffraction experiments on the single crystals obtained from Sn-flux showed that Sc preferentially substitutes for Yb(1) and Yb(3), and decreases the size of the unit cell by about 0.3%. Y substitutes on all Yb sites and increases the size of the unit cell by about 0.2%. Samples with Yb14-xRExMnSb11 (x~0.3) were prepared via powder metallurgy and spark plasma sintering for transport and thermal conductivity measurements. Electron microprobe of the Sc-substituted sample showed small regions (≤1 μ m) containing greater amounts of Sc, and X-ray powder diffraction of the ball milled Sc sample could be fitted as phase pure Yb14-xScxMnSb11. Y-substituted samples showed larger regions of excess Y in electron microprobe, and small amounts of Yb4Sb3 in X-ray powder diffraction. The Sc sample has slightly reduced carrier concentration over optimized Yb14MnSb11, while the Y samples have even lower carrier concentrations. These carrier concentrations lead to comparable resistivity to Yb14MnSb11 in the Sc-substituted material, and higher resistivities in the Y-substituted material. All materials had similar Seebeck coefficients that slightly exceed Yb14MnSb11 at high temperatures, with the Sc-substituted sample having the highest despite having a higher carrier concentration. Sc-substituted samples also had a slightly higher thermal conductivity over the Y-substituted samples, which had comparable thermal conductivity to Yb14MnSb11. The zT values of the Sc and Y substituted samples are

  18. AlSb/InAs/AlSb quantum wells

    NASA Technical Reports Server (NTRS)

    Kroemer, Herbert

    1990-01-01

    Researchers studied the InAs/AlSb system recently, obtaining 12nm wide quantum wells with room temperature mobilities up to 28,000 cm(exp 2)/V center dot S and low-temperature mobilities up to 325,000 cm(exp 2)/V center dot S, both at high electron sheet concentrations in the 10(exp 12)/cm(exp 2) range (corresponding to volume concentrations in the 10(exp 18)/cm(exp 2) range). These wells were not intentionally doped; the combination of high carrier concentrations and high mobilities suggest that the electrons are due to not-intentional modulation doping by an unknown donor in the AlSb barriers, presumably a stoichiometric defect, like an antisite donor. Inasmuch as not intentionally doped bulk AlSb is semi-insulating, the donor must be a deep one, being ionized only by draining into the even deeper InAs quantum well. The excellent transport properties are confirmed by other observations, like excellent quantum Hall effect data, and the successful use of the quantum wells as superconductive weak links between Nb electrodes, with unprecendentedly high critical current densities. The system is promising for future field effect transistors (FETs), but many processing problems must first be solved. Although the researchers have achieved FETs, the results so far have not been competitive with GaAs FETs.

  19. Tuning Magnetism of [MnSb4](9-) Cluster in Yb14MnSb11 through Chemical Substitutions on Yb Sites: Appearance and Disappearance of Spin Reorientation.

    PubMed

    Hu, Yufei; Chen, Chih-Wei; Cao, Huibo; Makhmudov, F; Grebenkemper, Jason H; Abdusalyamova, M N; Morosan, Emilia; Kauzlarich, Susan M

    2016-09-28

    Single crystals of Yb14-xRExMnSb11 (0 < x < 0.6, RE = Pr, Nd, Sm, and Gd) were synthesized by Sn flux. The compounds are iso-structural with Ca14AlSb11 (I41/acd), and their compositions were determined by wavelength-dispersive spectroscopy. Yb14MnSb11 is described as a partially screened d-metal Kondo system with the isolated [MnSb4](9-) tetrahedral cluster having a d(5) + hole configuration that results in four unpaired electrons measured in the ferromagnetically ordered phase. All of the Yb atoms in Yb14MnSb11 are present as Yb(2+), and the additional RE in Yb14-xRExMnSb11 is trivalent, contributing one additional electron to the structure and altering the magnetic properties. All compounds show ferromagnetic ordering in the range of 39-52 K attributed to the [MnSb4](9-) magnetic moment. Temperature-dependent DC magnetization measurements of Yb14-xPrxMnSb11 (0.44 ≤ x ≤ 0.56) show a sharp downturn right below the ferromagnetic transition temperature. Single-crystal neutron diffraction shows that this downturn is caused by a spin reorientation of the [MnSb4](9-) magnetic moments from the ab-plane to c-axis. The spin reorientation behavior, caused by large anisotropy, is also observed for similar x values of RE = Nd but not for RE = Sm or Gd at any value of x. In Pr-, Nd-, and Sm-substituted crystals, the saturation moments are consistent with ∼4 unpaired electrons attributed to [MnSb4](9-), indicating that local moments of Pr, Nd, and Sm do not contribute to the ferromagnetic order. In the case of RE = Pr, this is confirmed by neutron diffraction. In contrast, the magnetic measurements of RE = Gd show that the moments of Gd ferromagnetically order with the moments of [MnSb4](9-), and reduced screening of moments on Mn(2+) is evident. The sensitive variation of magnetic behavior is attributed to the various RE substitutions resulting in different interactions of the 4f-orbitals with the 3d-orbitals of Mn in the [MnSb4](9-) cluster conducted through 5p

  20. Tuning Magnetism of [MnSb4](9-) Cluster in Yb14MnSb11 through Chemical Substitutions on Yb Sites: Appearance and Disappearance of Spin Reorientation.

    PubMed

    Hu, Yufei; Chen, Chih-Wei; Cao, Huibo; Makhmudov, F; Grebenkemper, Jason H; Abdusalyamova, M N; Morosan, Emilia; Kauzlarich, Susan M

    2016-09-28

    Single crystals of Yb14-xRExMnSb11 (0 < x < 0.6, RE = Pr, Nd, Sm, and Gd) were synthesized by Sn flux. The compounds are iso-structural with Ca14AlSb11 (I41/acd), and their compositions were determined by wavelength-dispersive spectroscopy. Yb14MnSb11 is described as a partially screened d-metal Kondo system with the isolated [MnSb4](9-) tetrahedral cluster having a d(5) + hole configuration that results in four unpaired electrons measured in the ferromagnetically ordered phase. All of the Yb atoms in Yb14MnSb11 are present as Yb(2+), and the additional RE in Yb14-xRExMnSb11 is trivalent, contributing one additional electron to the structure and altering the magnetic properties. All compounds show ferromagnetic ordering in the range of 39-52 K attributed to the [MnSb4](9-) magnetic moment. Temperature-dependent DC magnetization measurements of Yb14-xPrxMnSb11 (0.44 ≤ x ≤ 0.56) show a sharp downturn right below the ferromagnetic transition temperature. Single-crystal neutron diffraction shows that this downturn is caused by a spin reorientation of the [MnSb4](9-) magnetic moments from the ab-plane to c-axis. The spin reorientation behavior, caused by large anisotropy, is also observed for similar x values of RE = Nd but not for RE = Sm or Gd at any value of x. In Pr-, Nd-, and Sm-substituted crystals, the saturation moments are consistent with ∼4 unpaired electrons attributed to [MnSb4](9-), indicating that local moments of Pr, Nd, and Sm do not contribute to the ferromagnetic order. In the case of RE = Pr, this is confirmed by neutron diffraction. In contrast, the magnetic measurements of RE = Gd show that the moments of Gd ferromagnetically order with the moments of [MnSb4](9-), and reduced screening of moments on Mn(2+) is evident. The sensitive variation of magnetic behavior is attributed to the various RE substitutions resulting in different interactions of the 4f-orbitals with the 3d-orbitals of Mn in the [MnSb4](9-) cluster conducted through 5p

  1. TANK 40 FINAL SB7B CHEMICAL CHARACTERIZATION RESULTS

    SciTech Connect

    Bannochie, C.

    2012-03-15

    /free OH{sup -}/other base, total inorganic carbon/total organic carbon (TIC/TOC) analyses, and Cs-137 gamma scan. Weighted dilutions of slurry were submitted for IC, TIC/TOC, and total base/free OH{sup -}/other base analyses. Activities for U-233, U-235, and Pu-239 were determined from the ICP-MS data for the aqua regia digestions of the Tank 40 WAPS slurry using the specific activity of each isotope. The Pu-241 value was determined from a Pu-238/-241 method developed by SRNL AD and previously described. The following conclusions were drawn from the analytical results reported here: (1) The ratios of the major elements for the SB7b WAPS sample are different from those measured for the SB7a WAPS sample. There is less Al and Mn relative to Fe than the previous sludge batch. (2) The elemental composition of this sample and the analyses conducted here are reasonable and consistent with DWPF batch data measurements in light of DWPF pre-sample concentration and SRAT product heel contributions to the DWPF SRAT receipt analyses. The element ratios for Al/Fe, Ca/Fe, Mn/Fe, and U/Fe agree within 10% between this work and the DWPF Sludge Receipt and Adjustment Tank (SRAT) receipt analyses. (3) Sulfur in the SB7b WAPS sample is 82% soluble, slightly less than results reported for SB3, SB4, and SB6 samples but unlike the 50% insoluble sulfur observed in the SB5 WAPS sample. In addition, 23% of the soluble sulfur is not present as sulfate in SB7b. (4) The average activities of the fissile isotopes of interest in the SB7b WAPS sample are (in {mu}Ci/g of total dried solids): 4.22E-02 U-233, 6.12E-04 U-235, 1.08E+01 Pu-239, and 5.09E+01 Pu-241. The full radionuclide composition will be reported in a future document. (5) The fission product noble metal and Ag concentrations appear to have largely peaked in previous DWPF sludge batches, with the exception of Ru, which still shows a slight increase in SB7b.

  2. Self-diffusion in 69Ga121Sb/71Ga123Sb isotope heterostructures

    NASA Astrophysics Data System (ADS)

    Bracht, H.; Nicols, S. P.; Haller, E. E.; Silveira, J. P.; Briones, F.

    2001-05-01

    Gallium and antimony self-diffusion experiments have been performed in undoped 69Ga121Sb/71Ga123Sb isotope heterostructures at temperatures between 571 and 708 °C under Sb- and Ga-rich ambients. Ga and Sb profiles measured with secondary ion mass spectrometry reveal that Ga diffuses faster than Sb by several orders of magnitude. This strongly suggests that the two self-atom species diffuse independently on their own sublattices. Experimental results lead us to conclude that Ga and Sb diffusion are mediated by Ga vacancies and Sb interstitials, respectively, and not by the formation of a triple defect proposed earlier by Weiler and Mehrer [Philos. Mag. A 49, 309 (1984)]. The extremely slow diffusion of Sb up to the melting temperature of GaSb is proposed to be a consequence of amphoteric transformations between native point defects which suppress the formation of those native defects which control Sb diffusion. Preliminary experiments exploring the effect of Zn indiffusion at 550 °C on Ga and Sb diffusion reveal an enhanced intermixing of the Ga isotope layers compared to undoped GaSb. However, under the same conditions the diffusion of Sb was not significantly affected.

  3. Antimony-based ligand exchange to promote crystallization in spray-deposited Cu2ZnSnSe4 solar cells.

    PubMed

    Carrete, Alex; Shavel, Alexey; Fontané, Xavier; Montserrat, Joana; Fan, Jiandong; Ibáñez, Maria; Saucedo, Edgardo; Pérez-Rodríguez, Alejandro; Cabot, Andreu

    2013-10-30

    A multistrategy approach to overcome the main challenges of nanoparticle-based solution-processed Cu2ZnSnSe4 thin film solar cells is presented. We developed an efficient ligand exchange strategy, using an antimony salt, to displace organic ligands from the surface of Cu2ZnSnS4 nanoparticles. An automated pulsed spray-deposition system was used to deposit the nanoparticles into homogeneous and crack-free films with controlled thickness. After annealing the film in a Se-rich atmosphere, carbon-free and crystalline Cu2ZnSnSe4 absorber layers were obtained. Not only was crystallization promoted by the complete removal of organics, but also Sb itself played a critical role. The Sb-assisted crystal growth is associated with the formation of a Sb-based compound at the grain boundaries, which locally reduces the melting point, thus promoting the film diffusion-limited crystallization.

  4. Bacillus amyloliquefaciens SB14 from rhizosphere alleviates Rhizoctonia damping-off disease on sugar beet.

    PubMed

    Karimi, Elham; Safaie, Naser; Shams-Baksh, Masoud; Mahmoudi, Bagher

    2016-11-01

    The use of biocontrol strains recently has become a popular alternative to conventional chemical treatments. A set of bacteria isolated from sugar beet rhizosphere and from roots and shoots of apple and walnut were evaluated for their potential to control sugar beet seedling damping-off caused by R. solani AG-4 and AG2-2.The results of in vitro assays concluded that three isolates, SB6, SB14, SB15, obtained from rhizosphere of sugar beet and five isolates, AP2, AP4, AP6, AP7, AP8, obtained from shoots and roots of apple were the most effective antagonists that inhibited the mycelial growth of both R. solani isolates. Combination of several biochemical tests and partial sequencing of 16S rRNA and gyrBgenes revealed that eight efficient bacterial isolates could be assigned to the genus Bacillus and all could tolerate high temperatures and salt concentrations in their vegetative growth. The potential biocontrol activity of the eight bacterial antagonists were tested in greenhouse condition. The results indicated that four strains,B. amyloliquefaciens SB14, B. pumilus SB6,B. siamensis AP2 and B. siamensisAP8 exerted a significant influence on controlling of seedling damping-off and performed significantly better than others.However, the treatment of the seeds with bacteria was most effective when the isolate SB14 was used, which significantly controlled damping-off disease by 58% caused by R. solani AG-4 and by 52.5% caused by R. solani AG-2-2. This indicates that the use of beneficial bacterial native to the host plant may increase the success rate in screening biocontrols, because these microbes are likely to be better adapted to their host and its associated environmental conditions than are strains isolated from other plant species grown in different environmental conditions. We can infer from the results reported here that sugar beet plantsmay recruitbeneficial microbes to the rhizosphere to help them solve context-specific challenges. PMID:27664740

  5. Bacillus amyloliquefaciens SB14 from rhizosphere alleviates Rhizoctonia damping-off disease on sugar beet.

    PubMed

    Karimi, Elham; Safaie, Naser; Shams-Baksh, Masoud; Mahmoudi, Bagher

    2016-11-01

    The use of biocontrol strains recently has become a popular alternative to conventional chemical treatments. A set of bacteria isolated from sugar beet rhizosphere and from roots and shoots of apple and walnut were evaluated for their potential to control sugar beet seedling damping-off caused by R. solani AG-4 and AG2-2.The results of in vitro assays concluded that three isolates, SB6, SB14, SB15, obtained from rhizosphere of sugar beet and five isolates, AP2, AP4, AP6, AP7, AP8, obtained from shoots and roots of apple were the most effective antagonists that inhibited the mycelial growth of both R. solani isolates. Combination of several biochemical tests and partial sequencing of 16S rRNA and gyrBgenes revealed that eight efficient bacterial isolates could be assigned to the genus Bacillus and all could tolerate high temperatures and salt concentrations in their vegetative growth. The potential biocontrol activity of the eight bacterial antagonists were tested in greenhouse condition. The results indicated that four strains,B. amyloliquefaciens SB14, B. pumilus SB6,B. siamensis AP2 and B. siamensisAP8 exerted a significant influence on controlling of seedling damping-off and performed significantly better than others.However, the treatment of the seeds with bacteria was most effective when the isolate SB14 was used, which significantly controlled damping-off disease by 58% caused by R. solani AG-4 and by 52.5% caused by R. solani AG-2-2. This indicates that the use of beneficial bacterial native to the host plant may increase the success rate in screening biocontrols, because these microbes are likely to be better adapted to their host and its associated environmental conditions than are strains isolated from other plant species grown in different environmental conditions. We can infer from the results reported here that sugar beet plantsmay recruitbeneficial microbes to the rhizosphere to help them solve context-specific challenges.

  6. Structure studies of nuclear systems close to the doubly-magic {sup 132}Sn using advanced {beta}{sup -}spectroscopy

    SciTech Connect

    Mach, H.; Fogelberg, B.; Jacobsson, L.; Lindroth, A.; Sanchez-Vega, M.; Taylor, R. B. E.; Blomqvist, J.; Isakov, V. I.; Mezilev, K. A.

    1998-12-21

    A brief description of the OSIRIS fission product mass separator and an outline of the current program of research in the domain of nuclear structure at the doubly magic {sup 132}Sn region are given. The most recent results on the study of the single particle states in {sup 133}Sb are briefly summarized.

  7. Sequential and simultaneous adsorption of Sb(III) and Sb(V) on ferrihydrite: Implications for oxidation and competition.

    PubMed

    Qi, Pengfei; Pichler, Thomas

    2016-02-01

    Antimony (Sb) is a naturally occurring element of growing environmental concern whose toxicity, adsorption behavior and other chemical properties are similar to that of arsenic (As). However, less is known about Sb compared to As. Individual and simultaneous adsorption experiments with Sb(III) and Sb(V) were conducted in batch mode with focus on the Sb speciation of the remaining liquid phase during individual Sb(III) adsorption experiments. The simultaneous adsorption and oxidation of Sb(III) was confirmed by the appearance of Sb(V) in the solution at varying Fe/Sb ratios (500, 100 and 8) and varying pH values (3.8, 7 and 9). This newly formed Sb(V) was subsequently removed from solution at a Fe/Sb ratio of 500 or at a pH of 3.8. However, more or less only Sb(V) was observed in the liquid phase at the end of the experiments at lower Fe/Sb ratios and higher pH, indicating that competition took place between the newly formed Sb(V) and Sb(III), and that Sb(III) outcompeted Sb(V). This was independently confirmed by simultaneous adsorption experiments of Sb(III) and Sb(V) in binary systems. Under such conditions, the presence of Sb(V) had no influence on the adsorption of Sb(III) while Sb(V) adsorption was significantly inhibited by Sb(III) over a wide pH range (4-10). Thus, in the presence of ferrihydrite and under redox conditions, which allow the presence of both Sb species, Sb(V) should be the dominant species in aquatic environments, since Sb(III) is adsorbed preferentially and at the same time oxidized to Sb(V).

  8. Curtiss SB2C-1 Helldiver

    NASA Technical Reports Server (NTRS)

    1943-01-01

    Curtiss SB2C-1 Helldiver: The front canopy came off this Curtiss SB2C-1 Helldiver while it was in flight, injuring pilot Herbert H. Hoover, but he recovered the plane back to the NACA at Langley Field. SB2Cs were license-built by Fairchild as SBFs and by Canadian Car and Foundry as SBWs. Helldivers were also flown by the British and Australians.

  9. New Isotopes and Proton Emitters-Crossing the Drip Line in the Vicinity of 100Sn

    NASA Astrophysics Data System (ADS)

    Čeliković, I.; Lewitowicz, M.; Gernhäuser, R.; Krücken, R.; Nishimura, S.; Sakurai, H.; Ahn, D. S.; Baba, H.; Blank, B.; Blazhev, A.; Boutachkov, P.; Browne, F.; de France, G.; Doornenbal, P.; Faestermann, T.; Fang, Y.; Fukuda, N.; Giovinazzo, J.; Goel, N.; Górska, M.; Ilieva, S.; Inabe, N.; Isobe, T.; Jungclaus, A.; Kameda, D.; Kim, Y.-K.; Kwon, Y. K.; Kojouharov, I.; Kubo, T.; Kurz, N.; Lorusso, G.; Lubos, D.; Moschner, K.; Murai, D.; Nishizuka, I.; Park, J.; Patel, Z.; Rajabali, M.; Rice, S.; Schaffner, H.; Shimizu, Y.; Sinclair, L.; Söderström, P.-A.; Steiger, K.; Sumikama, T.; Suzuki, H.; Takeda, H.; Wang, Z.; Watanabe, H.; Wu, J.; Xu, Z.

    2016-04-01

    Several new isotopes, 96In, 94Cd, 92Ag, and 90Pd, have been identified at the RIKEN Nishina Center. The study of proton drip-line nuclei in the vicinity of 93Ag and 89Rh with half-lives in the submicrosecond range. The systematics of the half-lives of odd-Z nuclei with Tz=-1 /2 toward 99Sn shows a stabilizing effect of the Z =50 shell closure. Production cross sections for nuclei in the vicinity of 100Sn measured at different energies and target thicknesses were compared to the cross sections calculated by epax taking into account contributions of secondary reactions in the primary target.

  10. Effect of metal doping on the low-temperature structural behavior of thermoelectric {beta}-Zn{sub 4}Sb{sub 3}

    SciTech Connect

    Nylen, Johanna; Lidin, Sven; Andersson, Magnus; Liu Hongxue; Newman, Nate; Haeussermann, Ulrich

    2007-09-15

    The low-temperature structural phase transitions of Bi, Pb, In and Sn-doped samples of thermoelectric Zn{sub 4}Sb{sub 3} have been characterized on crystals grown from molten metal fluxes, using electrical resistance and single crystal X-ray diffraction measurements. Room temperature stable, disordered, {beta}-Zn{sub 4}Sb{sub 3} undergoes two phase transitions at 254 and 235 K to the consecutively higher ordered phases {alpha} and {alpha}', respectively. The ideal crystallographic composition of {alpha}-Zn{sub 4}Sb{sub 3} is Zn{sub 13}Sb{sub 10}. The {alpha}-{alpha}' transformation is triggered by a slight and homogenous Zn deficiency with respect to this composition and introduces a compositional modulation in the {alpha}-Zn{sub 4}Sb{sub 3} structure. When preparing {beta}-Zn{sub 4}Sb{sub 3} in the presence of metals with low melting points (Bi, Sn, In, Pb) the additional metal atoms are unavoidably incorporated in small concentrations (0.04-1.3 at%) and act as dopants. This incorporation alters the subtle balance between Zn disorder and Zn deficiency in Zn{sub 4}Sb{sub 3} and has dramatic consequences for its low-temperature structural behavior. From molten metal flux synthesis it is possible to obtain (doped) Zn{sub 4}Sb{sub 3} samples which (1) only display a {beta}-{alpha} transition, (2) only display a {beta}-{alpha}' transition, or (3) do not display any low-temperature phase transition at all. Case (2) provided diffraction data with a sufficient quality to obtain a structural model for highly complex, compositionally modulated, {alpha}'-Zn{sub 4}Sb{sub 3}. The crystallographic composition of this phase is Zn{sub 84}Sb{sub 65}. - Graphical abstract: The thermoelectric material Zn{sub 4}Sb{sub 3} displays complex temperature polymorphism. Room temperature stable, disordered, {beta}-Zn{sub 4}Sb{sub 3} undergoes two phase transitions at 254 and 235 K to the consecutively higher ordered phases {alpha} and {alpha}', respectively. The {alpha

  11. Electrical properties of GaSb/InAsSb core/shell nanowires.

    PubMed

    Ganjipour, Bahram; Sepehri, Sobhan; Dey, Anil W; Tizno, Ofogh; Borg, B Mattias; Dick, Kimberly A; Samuelson, Lars; Wernersson, Lars-Erik; Thelander, Claes

    2014-10-24

    Temperature dependent electronic properties of GaSb/InAsSb core/shell and GaSb nanowires have been studied. Results from two-probe and four-probe measurements are compared to distinguish between extrinsic (contact-related) and intrinsic (nanowire) properties. It is found that a thin (2-3 nm) InAsSb shell allows low barrier charge carrier injection to the GaSb core, and that the presence of the shell also improves intrinsic nanowire mobility and conductance in comparison to bare GaSb nanowires. Maximum intrinsic field effect mobilities of 200 and 42 cm(2) Vs(-1) were extracted for the GaSb/InAsSb core/shell and bare-GaSb NWs at room temperature, respectively. The temperature-dependence of the mobility suggests that ionized impurity scattering is the dominant scattering mechanism in bare GaSb while phonon scattering dominates in core/shell nanowires. Top-gated field effect transistors were fabricated based on radial GaSb/InAsSb heterostructure nanowires with shell thicknesses in the range 5-7 nm. The fabricated devices exhibited ambipolar conduction, where the output current was studied as a function of AC gate voltage and frequency. Frequency doubling was experimentally demonstrated up to 20 kHz. The maximum operating frequency was limited by parasitic capacitance associated with the measurement chip geometry.

  12. Method of making an InAsSb/InAsSbP diode lasers

    DOEpatents

    Razeghi, M.

    1997-08-19

    InAsSb/InAsSbP/InAs Double Heterostructures (DH) and Separate Confinement Heterostructure Multiple Quantum Well (SCH-MQW) structures are taught wherein the ability to tune to a specific wavelength within 3 {micro}m to 5 {micro}m is possible by varying the ratio of As:Sb in the active layer. 9 figs.

  13. Method of making an InAsSb/InAsSbP diode lasers

    DOEpatents

    Razeghi, Manijeh

    1997-01-01

    InAsSb/InAsSbP/InAs Double Heterostructures (DH) and Separate Confinement Heterostructure Multiple Quantum Well (SCH-MQW) structures are taught wherein the ability to tune to a specific wavelength within 3 .mu.m to 5 .mu.m is possible by varying the ratio of As:Sb in the active layer.

  14. Preparation, characterization, and photocatalytic activity of porous AgBr@Ag and AgBrI@Ag plasmonic photocatalysts

    NASA Astrophysics Data System (ADS)

    Yang, Fan; Tian, Baozhu; Zhang, Jinlong; Xiong, Tianqing; Wang, Tingting

    2014-02-01

    Porous AgBr@Ag and AgBrI@Ag plasmonic photocatalysts were synthesized by a multistep route, including a dealloying method to prepare porous Ag, a transformation from Ag to AgBr and AgBrI, and a photo-reduction process to form Ag nanoparticles on the surface of AgBr and AgBrI. It was found that the porous structure kept unchanged during Ag was transferred into AgBr, AgBrI, AgBr@Ag, and AgBrI@Ag. Both porous AgBr@Ag and porous AgBrI@Ag showed much higher visible-light photocatalytic activity than cubic AgBr@Ag for the degradation of methyl orange, which is because the interconnected pore channels not only provide more reactive sites but also favor the transportation of photo-generated electrons and holes. For AgBrI@Ag, AgBrI solid solution formed at the interface of AgBr and AgI, and the phase junction can effectively separate the photo-generated electrons and holes, favorable to the improvement of photocatalytic activity. The optimal I content for obtaining the highest activity is ∼10 at.%.

  15. Corrosion Behavior of SnO2-based Electrode Ceramics in Soda-lime Glass Liquid

    NASA Astrophysics Data System (ADS)

    Luo, Guoqiang; Shen, Qiang; Li, Qizhong; Zhang, Dongming; Wang, Chuanbin; Zhang, Lianmeng

    2011-10-01

    Dense SnO2-based electrode ceramics have extensive application prospect in glass electric-melting industry due to the excellent electrically-conductive and chemical property in high temperatures and oxidation environment. In this paper, dense SnO2-based electrode ceramics doped with MnO2 and Sb2O3 were prepared by pressureless sintering method and the corrosion rate in soda-lime glass liquid as well as the microstructure evolution was mainly investigated. The results suggested that SnO2-based ceramics had good corrosion resistance, and the minimum value was only 2.54×10-4 mm/h when MnO2 content is 1.0% and Sb2O3 content is 0.1%. Composition Elements of Glass liquid were detected in the grain boundary and some intergranular pores. It was found that SnO2 grains remained unchanged, whereas MnO2 was easily dissolved into molten glass liquid. SnO2-based electrode ceramics with dense structure and few amounts of additives had excellent corrosion resistance to the molten glass.

  16. Astronomical imaging with InSb arrays

    NASA Astrophysics Data System (ADS)

    Pipher, Judith L.

    Ten years ago, Forrest presented the first astronomical images with a Santa Barbara Research Center (SBRC) 32 x 32 InSb array camera at the first NASA-Ames Infrared Detector Technology Work-shop. Soon after, SBRC began development of 58 x 62 InSb arrays, both for ground-based astronomy and for the Space Infrared Telescope Facility (SIRTF). By the time of the 1987 Hilo workshop 'Ground-based Astronomical Observations with Infrared Array Dectectors' astronomical results from cameras based on SBRC 32 x 32 and 58 x 62 InSb arrays, a CE linear InSb array, and a French 32 x 32 InSb charge injection device (CID) array were presented. And at the Tucson 1990 meeting 'Astrophysics with Infrared Arrays', it was clear that this new technology was no longer the province of 'IR pundits', but provided a tool for all astronomers. At this meeting, the first astronomical observations with SBRC's new, gateless passivation 256 x 256 InSb arrays will be presented: they perform spectacularly] In this review, I can only broadly brush on the interesting science completed with InSb array cameras. Because of the broad wavelength coverage (1-5.5 micrometer) of InSb, and the extremely high performance levels throughout the band, InSb cameras are used not only in the near IR, but also from 3-5.5 micrometer, where unique science is achieved. For example, the point-like central engines of active galactic nuclei (AGN) are delineated at L' and M', and Bra and 3.29 micrometer dust emission images of galactic and extragalactic objects yield excitation conditions. Examples of imaging spectroscopy, high spatial resolution imaging, as well as deep, broad-band imaging with InSb cameras at this meeting illustrate the power of InSb array cameras.

  17. Effect of MnSb clusters recharge on ferromagnetism in GaSb-MnSb thin films

    NASA Astrophysics Data System (ADS)

    Talantsev, A.; Koplak, O.; Morgunov, R.

    2016-07-01

    The concentration effect of charge carriers on the magnetic moment of ferromagnetic MnSb nanoclusters embedded in GaSbMn thin films is reported. High concentration of holes enhances the probability of their tunneling through the barrier between the semiconductor matrix and the MnSb nanocluster. Enrichment of the MnSb clusters by Mn2+ ions instead of Mn3+ enhances their ferromagnetism. Dynamics of magnetization relaxation of the MnSb clusters under applied magnetic field has been studied in the 8-300 K temperature range. Magnetic anisotropy constant ∼3.2·104 erg/cm3 has been determined. The fluctuation field HF = 7 Oe and the activation volume VA = 1.7·10-16 cm3 have been extracted from magnetic viscosity data.

  18. Solvothermal synthesis of wire-like SnxSb2Te3+x with an enhanced thermoelectric performance.

    PubMed

    Yang, Heng Quan; Miao, Lei; Liu, Cheng Yan; Wang, Xiao Yang; Peng, Ying; Zhang, Ai Juan; Zhou, Xiao Yuan; Wang, Guo Yu; Li, Chao; Huang, Rong

    2016-04-25

    Nanostructured tellurides have attracted increasing attention in thermoelectric applications for waste heat recovery and cooling devices. Here, we report on the synthesis of wire-like SnxSb2Te3+x (x = 0, 0.02 and 0.05) nanoparticles using elemental precursors in EG. The enhanced thermoelectric performance was achieved in alloyed samples due to the increase of carrier population in heavy valence band valleys by incorporating Sn(2+) at the Sb(3+) sublattice, enabling the simultaneous realization of low electrical resistivity along with a high Seebeck coefficient as well as the decline of thermal conductivity. Thus a boosted power factor and low thermal conductivity lead to the highest ZT value of 0.58 at 150 °C in the Sn0.02Sb2Te3.02 sample. Our research offers a general wet-chemical route for the preparation of one-dimensional nanomaterials and probably promotes the practical thermoelectric applications of Sb2Te3-based materials at low temperatures.

  19. Solvothermal synthesis of wire-like SnxSb2Te3+x with an enhanced thermoelectric performance.

    PubMed

    Yang, Heng Quan; Miao, Lei; Liu, Cheng Yan; Wang, Xiao Yang; Peng, Ying; Zhang, Ai Juan; Zhou, Xiao Yuan; Wang, Guo Yu; Li, Chao; Huang, Rong

    2016-04-25

    Nanostructured tellurides have attracted increasing attention in thermoelectric applications for waste heat recovery and cooling devices. Here, we report on the synthesis of wire-like SnxSb2Te3+x (x = 0, 0.02 and 0.05) nanoparticles using elemental precursors in EG. The enhanced thermoelectric performance was achieved in alloyed samples due to the increase of carrier population in heavy valence band valleys by incorporating Sn(2+) at the Sb(3+) sublattice, enabling the simultaneous realization of low electrical resistivity along with a high Seebeck coefficient as well as the decline of thermal conductivity. Thus a boosted power factor and low thermal conductivity lead to the highest ZT value of 0.58 at 150 °C in the Sn0.02Sb2Te3.02 sample. Our research offers a general wet-chemical route for the preparation of one-dimensional nanomaterials and probably promotes the practical thermoelectric applications of Sb2Te3-based materials at low temperatures. PMID:27046535

  20. Dissimilatory Sb(V) reduction by microorganisms isolated from Sb-contaminated sediment

    NASA Astrophysics Data System (ADS)

    Dovick, M. A.; Kulp, T. R.

    2013-12-01

    Mining and smelting are major sources of trace metal contamination in freshwater systems. Arsenic (As) is a common contaminant derived from certain mining operations and is a known toxic metalloid and carcinogen. Antimony (Sb) is listed as a pollutant of priority interest by the EPA and is presumed to share similar geochemical and toxicological properties with arsenic. Both elements can occur in four different oxidation states (V, III, 0, and -III) under naturally occurring conditions. In aqueous solutions As(V) and Sb(V) predominate in oxygenated surface waters whereas As(III) and Sb(III) are stable in anoxic settings. Numerous studies have examined microbiological redox pathways that utilize As(V) as a terminal electron acceptor for anaerobic respiration, however there have been few studies on microbial mechanisms that may affect the biogeochemical cycling of Sb in the environment. Here we report bacterial reduction of Sb(V) to Sb(III) in anoxic enrichment cultures and bacterial isolates grown from sediment collected from an Sb contaminated pond at a mine tailings site in Idaho (total pond water Sb concentration = 235.2 +/- 136.3 ug/L). Anaerobic sediment microcosms (40 mL) were established in artificial freshwater mineral salt medium, amended with millimolar concentrations of Sb(V), acetate or lactate, and incubated at 27°C for several days. Antimony(V), lactate, and acetate concentrations were monitored during incubation by High Performance Liquid Chromatography (HPLC) and Ion Chromatography (IC). Live sediment microcosms reduced millimolar amendments of Sb(V) to Sb(III) coupled to the oxidation of acetate and lactate, while no activity occurred in killed controls. Enrichment cultures were established by serially diluting Sb(V)-reducing microcosms in mineral salt medium with Sb(V) and acetate, and a Sb(V)-reducing bacterial strain was isolated by plating on anaerobic agar plates amended with millimolar Sb(V) and acetate. Direct cell counting demonstrated that

  1. Hexagonal Cu2SnS3 with metallic character: Another category of conducting sulfides

    NASA Astrophysics Data System (ADS)

    Wu, Changzheng; Hu, Zhenpeng; Wang, Chengle; Sheng, Hua; Yang, Jinlong; Xie, Yi

    2007-10-01

    A hexagonal Cu2SnS3 with uniform and well-dispersed nanoparticle morphology has been synthesized, representing an example of hexagonal system in the Cu -Sn-E (S, Se) ternary chalcogenides. Both theoretical calculation and experimental results give the unique metallic character of Cu2SnS3, which is significantly different from the traditional opinion that I-IV-VI ternary chalcogenides were regarded previously as small or middle band-gap semiconductors. Also, M(I)2SnS3 (M =Ag, Au, Rb, and Cs) serial compounds are another potential family of conducting sulfides. The conducting Cu2SnS3 product with the interlayer space and tunnels in the crystal structures could be fascinatingly introduced to the lithium battery application.

  2. A p → n transition for Sn-doped Cu(In,Ga)Se{sub 2} bulk materials

    SciTech Connect

    Monsefi, Mehrdad; Kuo, Dong-Hau

    2013-08-15

    Cu(In,Ga)Se{sub 2} (CIGSe) pellets at different Sn contents were fabricated by reactive liquid-phase sintering at 600–700 °C with the help of sintering aids of Sb{sub 2}S{sub 3} and Te. Powder preparation was based upon the molecular formula of Cu{sub 0.9}[(In{sub 0.7−x}Sn{sub x}Ga{sub 0.3}){sub 0.9}Sb{sub 0.1}](S{sub 0.15}Te{sub 0.2}Se{sub 1.65}) or Sn-x-CIGSe. Morphology, structure, and electrical property of Sn-doped CIGSe bulks were investigated. The composition of Sn-doped CIGSe is purposely designed for studying the doping effect on the CIGSe performance. The unexpected increase in hole concentration of CIGSe due to the donor doping is rationalized. A controllable n-type semiconductor is deliberately achieved for Sn-0.15-CIGSe and important for making a p/n homojunction in CIGSe solar cells. - Graphical abstract: The controls in defect type and electrical properties of Cu(In,Ga)Se{sub 2} by doping Sn{sup 4+} on the In{sup 3+} site. Highlights: • n-type Sn-CIGSe with n{sub e} of 6.4×10{sup 16} cm{sup −3} and μ{sub e} of 2.3 cm{sup 2}/V s was obtained. • This n-type Sn-CIGSe was obtained by material design and composition control. • The reported n-type CIGSe was obtained from the Zn/CIGSe and CdS/CIGSe bilayers. • Extrinsic donor doping was explored through the results of electrical properties. • A n/p homojunction with Sn-CIGSe and undoped one can be used for solar cell devices.

  3. TANK 40 FINAL SB4 CHEMICAL CHARACTERIZATION RESULTS

    SciTech Connect

    Best, J

    2008-01-30

    supernate phase from a settled sample. This decant was not filtered prior to performing a warm nitric acid digestion of the material in order to measure the Si content by ICP-AES. Three Si standards, a blank, and a matrix standard were prepared and submitted along with the Tank 40 samples. The following conclusions were drawn from the analytical results reported here: (1) The elemental composition of this sample and the analyses conducted here are reasonable and consistent with DWPF batch data measurements; (2) There was no measurable Si in samples of Tank 40 decant; and (3) Ag and the Ru, Rh, and Pd noble metal concentrations agree well with the estimate used for the SB4 70/30 blend of SB3 and Tank 51 performed in the SRNL Shielded Cells.

  4. Curtiss SB2C-1 Helldiver

    NASA Technical Reports Server (NTRS)

    1944-01-01

    Curtiss SB2C-1 Helldiver: This Curtiss SB2C-1 Helldiver was flown by the NACA at Langley with an early radio-control system. Flying controls such as a spring tab were also examined with this airframe. Helldivers were also operated by the U. S. Army as A-25 Shrikes.

  5. [Effect of heat treatment on the electrocatalytic activity of SnO2/Ti anode in degradation of p-benzoquinone].

    PubMed

    Yan, Jian-zhong; Qu, Jiu-hui; Sun, Zhi-min; Li, Mei; Liu, Rui-ping

    2004-01-01

    Sb-doped SnO2/Ti anode was prepared in our lab with thermal decomposition method, and in the same time, the effect of heat treatment on the properties of the electrode also was studied. Scanning electron microscopy (SEM) was used to study the surface characterization of the electrodes. X-ray photoelectro-spectroscopy (XPS) measurements were carried out to study the chemical state of elements, Sn and Sb. The potentiodynamic polarization behaviors of the two anodes in different solutions were performed. Galvanostatic electrolyses were carried out at 5 mA/cm2 to study the electrocatalytic activity of the two anodes in removing organic pollutant. SEM showed that the electrodes had the same well-known cracked-mud structure, while the electrode annealed in O2 [SnO2/Ti(O2)] had more larger surface area than the electrode annealed in the air [SnO2/Ti(air)]. XPS measurements showed that the binding energies of both Sn3d(5/2) and Sb3d(5/2) of SnO2/Ti(O2) were 0.15 eV smaller than what of the SnO2/Ti(air) film. Both of the electrochemical measurements and electrolyses results confirmed that SnO2/Ti(O2) was more active in the degradation of organic pollutant. The galvanostatic electrolyses lasted until the solutions were decoloured throughly, 76.3% of total organic carbon (TOC) was removed with SnO2/Ti(O2), compared with 63.3% of SnO2/Ti(air). The similar exponential rules were driven for the variations of residual TOC concentration with two anodes. PMID:15330416

  6. Ternary CaCu{sub 4}P{sub 2}-type pnictides AAg{sub 4}Pn{sub 2} (A=Sr, Eu; Pn=As, Sb)

    SciTech Connect

    Stoyko, Stanislav S.; Khatun, Mansura; Scott Mullen, C.; Mar, Arthur

    2012-08-15

    Four ternary pnictides AAg{sub 4}Pn{sub 2} (A=Sr, Eu; Pn=As, Sb) were prepared by reactions of the elements at 850 Degree-Sign C and their crystal structures were determined from single-crystal X-ray diffraction studies. These silver-containing pnictides AAg{sub 4}Pn{sub 2} adopt the trigonal CaCu{sub 4}P{sub 2}-type structure (Pearson symbol hR21, space group R3-bar m, Z=3; a=4.5555(6) A, c=24.041(3) A for SrAg{sub 4}As{sub 2}; a=4.5352(2) A, c=23.7221(11) A for EuAg{sub 4}As{sub 2}; a=4.7404(4) A, c=25.029(2) A for SrAg{sub 4}Sb{sub 2}; a=4.7239(3) A, c=24.689(2) A for EuAg{sub 4}Sb{sub 2}), which can be derived from the trigonal CaAl{sub 2}Si{sub 2}-type structure of the isoelectronic zinc-containing pnictides AZn{sub 2}Pn{sub 2} by insertion of additional Ag atoms into trigonal planar sites within [M{sub 2}Pn{sub 2}]{sup 2-} slabs built up of edge-sharing tetrahedra. Band structure calculations on SrAg{sub 4}As{sub 2} and SrAg{sub 4}Sb{sub 2} revealed that these charge-balanced Zintl phases actually exhibit no gap at the Fermi level and are predicted to be semimetals. - Graphical abstract: SrAg{sub 4}As{sub 2} and related pnictides adopt a CaCu{sub 4}P{sub 2}-type structure in which additional Ag atoms enter trigonal planar sites within slabs built from edge-sharing tetrahedra. Highlights: Black-Right-Pointing-Pointer AAg{sub 4}Pn{sub 2} are the first Ag-containing members of the CaCu{sub 4}P{sub 2}-type structure. Black-Right-Pointing-Pointer Ag atoms are stuffed in trigonal planar sites within CaAl{sub 2}Si{sub 2}-type slabs. Black-Right-Pointing-Pointer Ag-Ag bonding develops through attractive d{sup 10}-d{sup 10} interactions.

  7. Anisotropic magnetization and transport properties of RAgSb{sub 2} (R=Y, La-Nd, Sm, Gd-Tm)

    SciTech Connect

    Myers, Kenneth D.

    1999-11-08

    This study of the RAgSb{sub 2} series of compounds arose as part of an investigation of rare earth intermetallic compounds containing antimony with the rare earth in a position with tetragonal point symmetry. Materials with the rare earth in a position with tetragonal point symmetry frequently manifest strong anisotropies and rich complexity in the magnetic properties, and yet are simple enough to analyze. Antimony containing intermetallic compounds commonly possess low carrier densities and have only recently been the subject of study. Large single grain crystals were grown of the RAgSb{sub 2} (R=Y, La-Nd, Sm, Gd-Tm) series of compounds out of a high temperature solution. This method of crystal growth, commonly known as flux growth is a versatile method which takes advantage of the decreasing solubility of the target compound with decreasing temperature. Overall, the results of the crystal growth were impressive with the synthesis of single crystals of LaAgSb{sub 2} approaching one gram. However, the sample yield diminishes as the rare earth elements become smaller and heavier. Consequently, no crystals could be grown with R=Yb or Lu. Furthermore, EuAgSb{sub 2} could not be synthesized, likely due to the divalency of the Eu ion. For most of the RAgSb{sub 2} compounds, strong magnetic anisotropies are created by the crystal electric field splitting of the Hund's rule ground state. This splitting confines the local moments to lie in the basal plane (easy plane) for the majority of the members of the series. Exceptions to this include ErAgSb{sub 2} and TmAgSb{sub 2}, which have moments along the c-axis (easy axis) and CeAgSb{sub 2}, which at intermediate temperatures has an easy plane, but exchange coupling at low temperatures is anisotropic with an easy axis. Additional anisotropy is also observed within the basal plane of DyAgSb{sub 2}, where the moments are restricted to align along one of the {l_angle}110{r_angle} axes. Most of the RAgSb{sub 2} compounds

  8. Electronic structures and formation energies of pentavalent-ion-doped SnO{sub 2}: First-principles hybrid functional calculations

    SciTech Connect

    Behtash, Maziar; Joo, Paul H.; Nazir, Safdar; Yang, Kesong

    2015-05-07

    We studied the electronic properties and relative thermodynamic stability of several pentavalent-ion (Ta, Nb, P, Sb, and I) doped SnO{sub 2} systems using first-principles hybrid density functional theory calculations, in order to evaluate their potential as transparent conducting oxides (TCOs). I-doped SnO{sub 2}, though conductive, shows a narrowed optical band gap with respect to the undoped system due to the formation of gap states above the valence band. Nb-doped SnO{sub 2} forms localized impurity states below the conduction band bottom, suggesting that the Nb dopant exists as an Nb{sup 4+}-like cation, which is consistent with the recent experimental finding of the formation of the impurity level below the conduction band bottom [Appl. Phys. Express 5, 061201 (2012)]. Ta- and Sb-doped SnO{sub 2} display n-type conductivity, high charge carrier density, and widened optical band gap. P-doped SnO{sub 2} shows similar n-type electronic properties with that of Sb- and Ta-doped systems, and thus P-doped SnO{sub 2} is proposed as a promising candidate TCO for further experimental validation.

  9. Interplay between Sb flux and growth temperature during the formation of GaSb islands on GaP

    NASA Astrophysics Data System (ADS)

    El Kazzi, S.; Desplanque, L.; Wallart, X.; Wang, Y.; Ruterana, P.

    2012-06-01

    We investigate the influence of the Sb flux on the growth of GaSb islands on a highly mismatched (001) GaP substrate. Between low and medium Sb flux values, standard kinetics drives the GaSb island formation and their relaxation is progressively favored by 90° misfit dislocations at the GaSb/GaP interface. However, under high Sb flux, the GaSb islands are elongated in the [110] direction and their density decreases. Further experiments varying the growth temperature at fixed Sb flux confirm this finding. We relate this observation to an enhancement of Ga diffusion when the effective Sb flux on the surface is increased. This behavior is qualitatively explained by the large cohesive energy of Sb-Sb bonds present on the surface, which impede the Ga adatom incorporation.

  10. Exploring Ag(111) Substrate for Epitaxially Growing Monolayer Stanene: A First-Principles Study

    NASA Astrophysics Data System (ADS)

    Gao, Junfeng; Zhang, Gang; Zhang, Yong-Wei

    2016-07-01

    Stanene, a two-dimensional topological insulator composed of Sn atoms in a hexagonal lattice, is a promising contender to Si in nanoelectronics. Currently it is still a significant challenge to achieve large-area, high-quality monolayer stanene. We explore the potential of Ag(111) surface as an ideal substrate for the epitaxial growth of monolayer stanene. Using first-principles calculations, we study the stability of the structure of stanene in different epitaxial relations with respect to Ag(111) surface, and also the diffusion behavior of Sn adatom on Ag(111) surface. Our study reveals that: (1) the hexagonal structure of stanene monolayer is well reserved on Ag(111) surface; (2) the height of epitaxial stanene monolayer is comparable to the step height of the substrate, enabling the growth to cross the surface step and achieve a large-area stanene; (3) the perfect lattice structure of free-standing stanene can be achieved once the epitaxial stanene monolayer is detached from Ag(111) surface; and finally (4) the diffusion barrier of Sn adatom on Ag(111) surface is found to be only 0.041 eV, allowing the epitaxial growth of stanene monolayer even at low temperatures. Our above revelations strongly suggest that Ag(111) surface is an ideal candidate for growing large-area, high-quality monolayer stanene.

  11. Exploring Ag(111) Substrate for Epitaxially Growing Monolayer Stanene: A First-Principles Study

    PubMed Central

    Gao, Junfeng; Zhang, Gang; Zhang, Yong-Wei

    2016-01-01

    Stanene, a two-dimensional topological insulator composed of Sn atoms in a hexagonal lattice, is a promising contender to Si in nanoelectronics. Currently it is still a significant challenge to achieve large-area, high-quality monolayer stanene. We explore the potential of Ag(111) surface as an ideal substrate for the epitaxial growth of monolayer stanene. Using first-principles calculations, we study the stability of the structure of stanene in different epitaxial relations with respect to Ag(111) surface, and also the diffusion behavior of Sn adatom on Ag(111) surface. Our study reveals that: (1) the hexagonal structure of stanene monolayer is well reserved on Ag(111) surface; (2) the height of epitaxial stanene monolayer is comparable to the step height of the substrate, enabling the growth to cross the surface step and achieve a large-area stanene; (3) the perfect lattice structure of free-standing stanene can be achieved once the epitaxial stanene monolayer is detached from Ag(111) surface; and finally (4) the diffusion barrier of Sn adatom on Ag(111) surface is found to be only 0.041 eV, allowing the epitaxial growth of stanene monolayer even at low temperatures. Our above revelations strongly suggest that Ag(111) surface is an ideal candidate for growing large-area, high-quality monolayer stanene. PMID:27373464

  12. Are the nuclei beyond 132Sn very exotic?

    NASA Astrophysics Data System (ADS)

    Lozeva, R.; Naïdja, H.; Nowacki, F.; Odahara, A.; Moon, C.-B.; NP1112-RIBF87 Collaboration

    2016-06-01

    The term exotic nucleus is used for nuclei that have different from normal behavior. However, it turns out that the term normal is valid only for nuclei close to stability and more particularly for regions close to double-shell closures. As long as one drives away in the neutron-rich nuclei, especially at intermediate mass number, interplay between normal single-particle and many collective particle-hole excitations compete. In some cases with the addition of neutrons, these may turn to evolve as a skin, acting against the core nucleus that may also influence its shell evolution. Knowledge of these nuclear ingredients is especially interesting beyond the doubly-magic 132Sn, however a little is known on how the excitations modes develop with the addition of both protons and neutrons. Especially for the Sb nuclei, where one gradually increases these valence particles, the orbital evolution and its impact on exoticness is very intriguing. Experimental studies were conducted on several such isotopes using isomer and, β-decay spectroscopy at RIBF within EURICA. In particular, new data on 140Sb and 136Sb are examined and investigated in the framework of shell model calculations.

  13. Breeding Value of the qSB9b and qSB12a QTLs in RiceBreeding Value of the qSB9b and qSB12a QTLs in Rice

    Technology Transfer Automated Retrieval System (TEKTRAN)

    Sheath blight (SB) caused by Rhizoctonia solani Kuhn is a serious rice disease worldwide. The results of 123 TeQing-into-Lemont (TILs) showed those with introgressions containing qSB9b and/or qSB12a were among the most SB resistant TILs. TIL:615, TIL:642 and TIL:567 have consistently appeared modera...

  14. In-Situ Monitoring of GaSb, GaInAsSb, and AlGaAsSb*

    SciTech Connect

    Breiland, W.G.; Jensen, K.F.; Vineis, C.J.; Wang, C.A.

    1999-04-26

    The suitability of the wavelength range provided by silicon photodiode detector arrays for monitoring the spectral reflectance during epitaxial growth of GaSb, AlGaAsSb, and GaInAsSb, which have cutoff wavelengths at 25 degree C of 1.7, 1.2, and 2.3 um, respectively, is demonstrated. These alloys were grown lattice matched to GaSb in a vertical rotating-disk reactor, which was modified to accommodate near normal reflectance without affecting epilayer uniformity, By using a virtual interface model, the growth rate and complex refractive index at the growth temperature are extracted for these alloys over the 600 to 1000 nm spectral range. Excellent agreement is obtained between the extracted growth rate and that determined by ex-situ measurement.

  15. Relation between the magnetization and the electrical properties of alloy GaSb-MnSb films

    SciTech Connect

    Koplak, O. V.; Polyakov, A. A.; Davydov, A. B.; Morgunov, R. B.; Talantsev, A. D.; Kochura, A. V.; Fedorchenko, I. V.; Novodvorskii, O. A.; Parshina, L. S.; Khramova, O. D.; Shorokhova, A. V.; Aronzon, B. A.

    2015-06-15

    The influence of the charge carrier concentration on the magnetic properties of GaSb-MnSb alloys is studied. The ferromagnetism of GaSb-MnSb films is caused by the presence of MnSb granules and manifests itself in both magnetometric measurements and the presence of an anisotropic magnetoresistance and the anomalous Hall effect. Electric conduction is executed by charge carriers (holes) in a GaSb matrix. The magnetization of clusters depends on stoichiometry and the concentration of Mn{sup 2+} and Mn{sup 3+} ions, which is specified by the film growth conditions. At high film growth temperatures, ferromagnetic clusters containing Mn{sup 2+} ions mainly form. At low growth temperatures, an antiferromagnetic phase containing Mn{sup 3+} ions forms.

  16. New Isotopes and Proton Emitters-Crossing the Drip Line in the Vicinity of ^{100}Sn.

    PubMed

    Čeliković, I; Lewitowicz, M; Gernhäuser, R; Krücken, R; Nishimura, S; Sakurai, H; Ahn, D S; Baba, H; Blank, B; Blazhev, A; Boutachkov, P; Browne, F; de France, G; Doornenbal, P; Faestermann, T; Fang, Y; Fukuda, N; Giovinazzo, J; Goel, N; Górska, M; Ilieva, S; Inabe, N; Isobe, T; Jungclaus, A; Kameda, D; Kim, Y-K; Kwon, Y K; Kojouharov, I; Kubo, T; Kurz, N; Lorusso, G; Lubos, D; Moschner, K; Murai, D; Nishizuka, I; Park, J; Patel, Z; Rajabali, M; Rice, S; Schaffner, H; Shimizu, Y; Sinclair, L; Söderström, P-A; Steiger, K; Sumikama, T; Suzuki, H; Takeda, H; Wang, Z; Watanabe, H; Wu, J; Xu, Z

    2016-04-22

    Several new isotopes, ^{96}In, ^{94}Cd, ^{92}Ag, and ^{90}Pd, have been identified at the RIKEN Nishina Center. The study of proton drip-line nuclei in the vicinity of ^{100}Sn led to the discovery of new proton emitters ^{93}Ag and ^{89}Rh with half-lives in the submicrosecond range. The systematics of the half-lives of odd-Z nuclei with T_{z}=-1/2 toward ^{99}Sn shows a stabilizing effect of the Z=50 shell closure. Production cross sections for nuclei in the vicinity of ^{100}Sn measured at different energies and target thicknesses were compared to the cross sections calculated by epax taking into account contributions of secondary reactions in the primary target. PMID:27152796

  17. Electrodeposition of SbTe Phase-Change Alloys

    SciTech Connect

    Huang,Q.; Kellock, A.; Raoux, S.

    2007-01-01

    Electrodeposition of SbTe thin films was investigated at room temperature, where amorphous deposits were obtained. The electrodeposition of Sb was found to be induced by Te, while the latter was not affected by the Sb. Detailed studies on this induced deposition were carried out by varying the Sb(III) and Te(IV) concentrations, pH, and agitation. The Sb deposition rate was found to be independent of the concentrations of both species but dependent on the pH and agitation. A phase transition from amorphous films into crystalline Sb2Te3 at 120 C was observed for the plated SbTe.

  18. Interaction of As and Sb in the hyperaccumulator Pteris vittata L.: changes in As and Sb speciation by XANES.

    PubMed

    Wan, Xiaoming; Lei, Mei; Chen, Tongbin

    2016-10-01

    Arsenic (As) and antimony (Sb) are chemical analogs that display similar characteristics in the environment. The As hyperaccumulator Pteris vittata L. is a potential As-Sb co-accumulating species. However, when this plant is exposed to different As and Sb speciation, the associated accumulating mechanisms and subsequent assimilation processes of As and Sb remain unclear. A 2-week hydroponic experiment was conducted by exposing P. vittata to single AsIII, AsV, SbIII, and SbV or the co-existence of AsIII and SbIII and AsV and SbV. P. vittata could co-accumulate As and Sb in the pinna (>1000 mg kg(-1)) with high translocation (>1) of As and Sb from the root to the pinna. P. vittata displayed apparent preference to the trivalent speciation of As and Sb than to the pentavalent speciation. Under the single exposure of AsIII or SbIII, the pinna concentration of As and Sb was 84 and 765 % higher than that under the single exposure of AsV or SbV, respectively. Despite the provided As speciation, the main speciation of As in the root was AsV, whereas the main speciation of As in the pinna was AsIII. The Sb in the roots comprised SbV and SbIII when exposed to SbV but was exclusively SbIII when exposed to SbIII. The Sb in the pinna was a mixture of SbV and SbIII regardless of the provided Sb speciation. Compared with the single exposure of As, the co-existence of As and Sb increased the As concentration in the pinna of P. vittata by 50-66 %, accompanied by a significant increase in the AsIII percentage in the root. Compared with the single exposure of Sb, the co-existence of Sb and As also increased the Sb concentration in the pinna by 51-100 %, but no significant change in Sb speciation was found in P. vittata. PMID:27351876

  19. [Chemical contents of dust released by electric enterprises].

    PubMed

    Ianin, E P

    2000-01-01

    Dust in electric lamp plant appeared to contain maximal levels of Sb, Cd, Hg, W, Pb and Sn, that in plant producing light sources and electric vacuum glass--Cu, B, Ag and Pb, that in semiconductor industry and power electronic enterprises--Cd, Mo, Cu, Pb, Ag and Zn, that in cable plant--Cu, Sn, Pb, Sb, Cd.

  20. On the RMgSn rare earth compounds

    SciTech Connect

    Manfrinetti, P.; Provino, A.; Gschneidner, K. A.

    2009-04-07

    A new family of ternary rare earth compounds, RMgSn, has been synthesized and their crystal structures, formation thermodynamics and melting behavior have been studied. All of the rare earth elements (including Y) form the 1:1:1 equiatomic phase with Mg and Sn. These compounds crystallize with two different structure types: the RMgSn phases with the light R (R = La, Ce and Pr) adopt the orthorhombic TiNiSi structure type (an ordered derivative of the Co{sub 2}Si-type structure, oP12, space group Pnma), while the ones formed by the heavier R (R = Nd, Sm, Gd, Tb, Dy, Ho, Er, Tm and Lu, plus Y) have the tetragonal CeScSi-type structure (an ordered derivative of the La{sub 2}Sb-type structure, t/12, space group/4/mmm). The observed unit cell volume V{sub obs} and the mean atomic volume V{sub obs}/n (where n is the number of atoms in a unit cell) both decrease as expected due to the lanthanide contraction, but following different trends. The volume of formation ({Delta}V%) becomes more negative on going from La to Lu along the series. All phases have been found to form congruently (including YMgSn and probably LuMgSn). Their melting temperatures decrease from La to Lu, but with different slopes for the two different structure types. Relationships, between the volume of formation and also the melting points with the lanthanide contraction have been examined. The relationship between the former is anomalous compared to that observed for other R{sub x}M{sub y} series of compounds, while the latter relationship is consistent with previously published results.

  1. Growth mechanisms of GaSb heteroepitaxial films on Si with an AlSb buffer layer

    SciTech Connect

    Vajargah, S. Hosseini; Botton, G. A.; Ghanad-Tavakoli, S.; Preston, J. S.; Kleiman, R. N.

    2013-09-21

    The initial growth stages of GaSb epilayers on Si substrates and the role of the AlSb buffer layer were studied by high-angle annular dark-field scanning transmission electron microscopy (HAADF-STEM). Heteroepitaxy of GaSb and AlSb on Si both occur by Volmer-Weber (i.e., island mode) growth. However, the AlSb and GaSb islands have distinctly different characteristics as revealed through an atomic-resolution structural study using Z-contrast of HAADF-STEM imaging. While GaSb islands are sparse and three dimensional, AlSb islands are numerous and flattened. The introduction of 3D island-forming AlSb buffer layer facilitates the nucleation of GaSb islands. The AlSb islands-assisted nucleation of GaSb islands results in the formation of drastically higher quality planar film at a significantly smaller thickness of films. The interface of the AlSb and GaSb epilayers with the Si substrate was further investigated with energy dispersive X-ray spectrometry to elucidate the key role of the AlSb buffer layer in the growth of GaSb epilayers on Si substrates.

  2. Sb-induced phase control of InAsSb nanowires grown by molecular beam epitaxy.

    PubMed

    Zhuang, Q D; Anyebe, Ezekiel A; Chen, R; Liu, H; Sanchez, Ana M; Rajpalke, Mohana K; Veal, Tim D; Wang, Z M; Huang, Y Z; Sun, H D

    2015-02-11

    For the first time, we report a complete control of crystal structure in InAs(1-x)Sb(x) NWs by tuning the antimony (Sb) composition. This claim is substantiated by high-resolution transmission electron microscopy combined with photoluminescence spectroscopy. The pure InAs nanowires generally show a mixture of wurtzite (WZ) and zinc-blende (ZB) phases, where addition of a small amount of Sb (∼2-4%) led to quasi-pure WZ InAsSb NWs, while further increase of Sb (∼10%) resulted in quasi-pure ZB InAsSb NWs. This phase transition is further evidenced by photoluminescence (PL) studies, where a dominant emission associated with the coexistence of WZ and ZB phases is present in the pure InAs NWs but absent in the PL spectrum of InAs0.96Sb0.04 NWs that instead shows a band-to-band emission. We also demonstrate that the Sb addition significantly reduces the stacking fault density in the NWs. This study provides new insights on the role of Sb addition for effective control of nanowire crystal structure.

  3. ACCELERATED PROCESSING OF SB4 AND PREPARATION FOR SB5 PROCESSING AT DWPF

    SciTech Connect

    Herman, C

    2008-12-01

    The Defense Waste Processing Facility (DWPF) initiated processing of Sludge Batch 4 (SB4) in May 2007. SB4 was the first DWPF sludge batch to contain significant quantities of HM or high Al sludge. Initial testing with SB4 simulants showed potential negative impacts to DWPF processing; therefore, Savannah River National Laboratory (SRNL) performed extensive testing in an attempt to optimize processing. SRNL's testing has resulted in the highest DWPF production rates since start-up. During SB4 processing, DWPF also began incorporating waste streams from the interim salt processing facilities to initiate coupled operations. While DWPF has been processing SB4, the Liquid Waste Organization (LWO) and the SRNL have been preparing Sludge Batch 5 (SB5). SB5 has undergone low-temperature aluminum dissolution to reduce the mass of sludge for vitrification and will contain a small fraction of Purex sludge. A high-level review of SB4 processing and the SB5 preparation studies will be provided.

  4. Study on electrical properties of metal/GaSb junctions using metal-GaSb alloys

    SciTech Connect

    Nishi, Koichi Yokoyama, Masafumi; Kim, Sanghyeon; Takenaka, Mitsuru; Takagi, Shinichi; Yokoyama, Haruki

    2014-01-21

    We study the metal-GaSb alloy formation, the structural properties and the electrical characteristics of the metal-alloy/GaSb diodes by employing metal materials such as Ni, Pd, Co, Ti, Al, and Ta, in order to clarify metals suitable for GaSb p-channel metal-oxide-semiconductor field-effect transistors (pMOSFETs) as metal-GaSb alloy source/drain (S/D). It is found that Ni, Pd, Co, and Ti can form alloy with GaSb by rapid thermal annealing at 250, 250, 350, and 450 °C, respectively. The Ni-GaSb and Pd-GaSb alloy formation temperature of 250 °C is lower than the conventional dopant activation annealing for ion implantation, which enable us to lower the process temperature. The alloy layers show lower sheet resistance (R{sub Sheet}) than that of p{sup +}-GaSb layer formed by ion implantation and activation annealing. We also study the electrical characteristics of the metal-alloy/GaSb junctions. The alloy/n-GaSb contact has large Schottky barrier height (ϕ{sub B}) for electrons, ∼0.6 eV, and low ϕ{sub B} for holes, ∼0.2 eV, which enable us to realize high on/off ratio in pMOSFETs. We have found that the Ni-GaSb/GaSb Schottky junction shows the best electrical characteristics with ideal factor (n) of 1.1 and on-current/off-current ratio (I{sub on}/I{sub off}) of ∼10{sup 4} among the metal-GaSb alloy/GaSb junctions evaluated in the present study. These electrical properties are also superior to those of a p{sup +}-n diode fabricated by Be ion implantation with activation annealing at 350 °C. As a result, the Ni-GaSb alloy can be regarded as one of the best materials to realize metal S/D in GaSb pMOSFETs.

  5. AGS experiments - 1994, 1995, 1996

    SciTech Connect

    Depken, J.C.

    1997-01-01

    This report contains the following information on the Brookhaven AGS Accelerator complex: FY 1996 AGS schedule as run; FY 1997 AGS schedule (working copy); AGS beams 1997; AGS experimental area FY 1994 physics program; AGS experimental area FY 1995 physics program; AGS experimental area FY 1996 physics program; AGS experimental area FY 1997 physics program (in progress); a listing of experiments by number; two-phage summaries of each experiment begin here, also ordered by number; listing of publications of AGS experiments begins here; and listing of AGS experimenters begins here.

  6. I8Sb10Ge36

    PubMed Central

    Kars, Mohammed; Roisnel, Thierry; Dorcet, Vincent; Rebbah, Allaoua; Otero-Diáz, L. Carlos

    2010-01-01

    Single crystals of the title compound, octa­iodide deca­anti­monate hexa­tria­conta­germanide, were grown by chemical transport reactions. The structure is isotypic with the analogous clathrates-I. In this structure, the (Ge,Sb)46 framework consists of statistically occupied Ge and Sb sites that atoms form bonds in a distorted tetra­hedral arrangement. They form polyhedra that are covalently bonded to each other by shared faces. There are two polyhedra of different sizes, viz. a (Ge,Sb)20 dodeca­hedron and a (Ge,Sb)24 tetra­cosa­hedron in a 1:3 ratio. The guest atom (iodine) resides inside these polyhedra with symmetry m3 (Wyckoff position 2a) and 2m (Wyckoff position 2d), respectively. PMID:21579265

  7. Native point defects in GaSb

    SciTech Connect

    Kujala, J.; Segercrantz, N.; Tuomisto, F.; Slotte, J.

    2014-10-14

    We have applied positron annihilation spectroscopy to study native point defects in Te-doped n-type and nominally undoped p-type GaSb single crystals. The results show that the dominant vacancy defect trapping positrons in bulk GaSb is the gallium monovacancy. The temperature dependence of the average positron lifetime in both p- and n-type GaSb indicates that negative ion type defects with no associated open volume compete with the Ga vacancies. Based on comparison with theoretical predictions, these negative ions are identified as Ga antisites. The concentrations of these negatively charged defects exceed the Ga vacancy concentrations nearly by an order of magnitude. We conclude that the Ga antisite is the native defect responsible for p-type conductivity in GaSb single crystals.

  8. Antimony Doping in Solution-processed Cu2 ZnSn(S,Se)4 Solar Cells.

    PubMed

    Tai, Kong Fai; Fu, Dongchuan; Chiam, Sing Yang; Huan, Cheng Hon Alfred; Batabyal, Sudip Kumar; Wong, Lydia Helena

    2015-10-26

    Kesterite Cu2 ZnSn(S,Se)4 (CZTSSe) is obtained using a facile precursor-solution method followed by selenization. Power-conversion efficiency of 6.0 % is achieved and further improved to 8.2 % after doping the absorber with 0.5 mol % Sb. XRD and Raman spectroscopy show similar characteristics for the undoped and doped CZTSSe. Increasing the Sb concentration increases the grain size and lowers the series resistance. However, further Sb doping beyond 0.5 mol % degrades device performance due to lower open-circuit voltage (and therefore lower fill factor). The effect of Sb doping and the doping concentration are investigated by power-dependent and temperature-dependent photoluminescence studies, revealing that trap density is significant reduced with 0.5 mol % Sb doping. Additional doping beyond 0.5 mol % creates more defects that quench the photoexcited carriers and decrease the open-circuit voltage.

  9. Antimony Doping in Solution-processed Cu2 ZnSn(S,Se)4 Solar Cells.

    PubMed

    Tai, Kong Fai; Fu, Dongchuan; Chiam, Sing Yang; Huan, Cheng Hon Alfred; Batabyal, Sudip Kumar; Wong, Lydia Helena

    2015-10-26

    Kesterite Cu2 ZnSn(S,Se)4 (CZTSSe) is obtained using a facile precursor-solution method followed by selenization. Power-conversion efficiency of 6.0 % is achieved and further improved to 8.2 % after doping the absorber with 0.5 mol % Sb. XRD and Raman spectroscopy show similar characteristics for the undoped and doped CZTSSe. Increasing the Sb concentration increases the grain size and lowers the series resistance. However, further Sb doping beyond 0.5 mol % degrades device performance due to lower open-circuit voltage (and therefore lower fill factor). The effect of Sb doping and the doping concentration are investigated by power-dependent and temperature-dependent photoluminescence studies, revealing that trap density is significant reduced with 0.5 mol % Sb doping. Additional doping beyond 0.5 mol % creates more defects that quench the photoexcited carriers and decrease the open-circuit voltage. PMID:26376602

  10. Thermoelectric properties of SnO2-based ceramics doped with Nd, Hf or Bi

    NASA Astrophysics Data System (ADS)

    Yanagiya, S.; Nong, N. V.; Sonne, M.; Pryds, N.

    2012-06-01

    We report the thermoelectric properties of Nd-, Hf-or Bi-doped SnO2-based ceramics prepared by solid-state sintering. Polycrystalline SnO2-based samples (Sn0.97Sb0.01Zn0.01M0.01O2, M = Nd, Hf or Bi) were prepared by solid-state reactions. We confirmed that Bi-doping increased the power factor due to both the enhanced electrical conductivity and Seebeck coefficient compared to the matrix material. The maximum power factor of 4.8 × 10-4 Wm-1K-2 was attained for the Bi-doped sample at 1060 K.

  11. The intrinsic disorder related alloy scattering in ZrNiSn half-Heusler thermoelectric materials.

    PubMed

    Xie, Hanhui; Wang, Heng; Fu, Chenguang; Liu, Yintu; Snyder, G Jeffrey; Zhao, Xinbing; Zhu, Tiejun

    2014-01-01

    The intrinsic structural disorder dramatically affects the thermal and electronic transport in semiconductors. Although normally considered an ordered compound, the half-Heusler ZrNiSn displays many transport characteristics of a disordered alloy. Similar to the (Zr,Hf)NiSn based solid solutions, the unsubstituted ZrNiSn compound also exhibits charge transport dominated by alloy scattering, as demonstrated in this work. The unexpected charge transport, even in ZrNiSn which is normally considered fully ordered, can be explained by the Ni partially filling interstitial sites in this half-Heusler system. The influence of the disordering and defects in crystal structure on the electron transport process has also been quantitatively analyzed in ZrNiSn1-xSbx with carrier concentration nH ranging from 5.0 × 10(19) to 2.3 × 10(21) cm(-3) by changing Sb dopant content. The optimized carrier concentration nH ≈ 3-4 × 10(20) cm(-2) results in ZT ≈ 0.8 at 875K. This work suggests that MNiSn (M = Hf, Zr, Ti) and perhaps most other half-Heusler thermoelectric materials should be considered highly disordered especially when trying to understand the electronic and phonon structure and transport features.

  12. The intrinsic disorder related alloy scattering in ZrNiSn half-Heusler thermoelectric materials

    PubMed Central

    Xie, Hanhui; Wang, Heng; Fu, Chenguang; Liu, Yintu; Snyder, G. Jeffrey; Zhao, Xinbing; Zhu, Tiejun

    2014-01-01

    The intrinsic structural disorder dramatically affects the thermal and electronic transport in semiconductors. Although normally considered an ordered compound, the half-Heusler ZrNiSn displays many transport characteristics of a disordered alloy. Similar to the (Zr,Hf)NiSn based solid solutions, the unsubstituted ZrNiSn compound also exhibits charge transport dominated by alloy scattering, as demonstrated in this work. The unexpected charge transport, even in ZrNiSn which is normally considered fully ordered, can be explained by the Ni partially filling interstitial sites in this half-Heusler system. The influence of the disordering and defects in crystal structure on the electron transport process has also been quantitatively analyzed in ZrNiSn1-xSbx with carrier concentration nH ranging from 5.0×1019 to 2.3×1021 cm−3 by changing Sb dopant content. The optimized carrier concentration nH ≈ 3–4×1020 cm−2 results in ZT ≈ 0.8 at 875K. This work suggests that MNiSn (M = Hf, Zr, Ti) and perhaps most other half-Heusler thermoelectric materials should be considered highly disordered especially when trying to understand the electronic and phonon structure and transport features. PMID:25363573

  13. Thermoelectric performance of nanostructured p-type Zr0.5Hf0.5Co0.4Rh0.6Sb1-xSnx half-Heusler alloys

    NASA Astrophysics Data System (ADS)

    Maji, Pramathesh; Makongo, Julien P. A.; Zhou, Xiaoyuan; Chi, Hang; Uher, Ctirad; Poudeu, Pierre F. P.

    2013-06-01

    Several compositions of the p-type half-Heusler alloys Zr0.5Hf0.5Co0.4Rh0.6Sb1-xSnx (0≤x≤0.4) were synthesized by mechanically alloying high purity elemental powders using hardened steel jars and balls on a high energy shaker mill. Powder X-ray diffraction (XRD) investigations of several aliquots taken after regularly spaced milling time suggested that single phase products with half-Heusler (HH) structure can be obtained after 10 h. However, XRD and transmission electron microscopy (TEM) studies of several specimens obtained from compacted polycrystalline powders of Zr0.5Hf0.5Co0.4Rh0.6Sb1-xSnx alloys using a uniaxial hot press (HP) revealed the presence of CoSb inclusions with various sizes embedded inside the HH matrix. Hall effect, electrical conductivity, and thermopower data collected between 300 K and 775 K on several compositions suggested that electronic transport in the synthesized Zr0.5Hf0.5Co0.4Rh0.6Sb1-xSnx/CoSb composites strongly depends on the average size and/or mole fraction of the embedded CoSb inclusions rather than the fraction (x) of Sn substituting for Sb. Among the samples investigated, the nanocomposite with x=0.2, which contains nanometer-scale CoSb inclusions, showed the largest power factor (800 μW/K2 m at 775 K) and the lowest lattice thermal conductivity (˜2.2 W/m K at 775 K) leading to a six-fold enhancement in the figure of merit when compared to the Zr0.5Hf0.5Co0.4Rh0.6Sb0.99Sn0.01 bulk matrix.

  14. Controlled CVD growth of Cu-Sb alloy nanostructures

    NASA Astrophysics Data System (ADS)

    Chen, Jing; Yin, Zongyou; Sim, Daohao; Tay, Yee Yan; Zhang, Hua; Ma, Jan; Hng, Huey Hoon; Yan, Qingyu

    2011-08-01

    Sb based alloy nanostructures have attracted much attention due to their many promising applications, e.g. as battery electrodes, thermoelectric materials and magnetic semiconductors. In many cases, these applications require controlled growth of Sb based alloys with desired sizes and shapes to achieve enhanced performance. Here, we report a flexible catalyst-free chemical vapor deposition (CVD) process to prepare Cu-Sb nanostructures with tunable shapes (e.g. nanowires and nanoparticles) by transporting Sb vapor to react with copper foils, which also serve as the substrate. By simply controlling the substrate temperature and distance, various Sb-Cu alloy nanostructures, e.g. Cu11Sb3 nanowires (NWs), Cu2Sb nanoparticles (NPs), or pure Sb nanoplates, were obtained. We also found that the growth of Cu11Sb3 NWs in such a catalyst-free CVD process was dependent on the substrate surface roughness. For example, smooth Cu foils could not lead to the growth of Cu11Sb3 nanowires while roughening these smooth Cu foils with rough sand papers could result in the growth of Cu11Sb3 nanowires. The effects of gas flow rate on the size and morphology of the Cu-Sb alloy nanostructures were also investigated. Such a flexible growth strategy could be of practical interest as the growth of some Sb based alloy nanostructures by CVD may not be easy due to the large difference between the condensation temperature of Sb and the other element, e.g. Cu or Co.

  15. CONDENSED MATTER: ELECTRONIC STRUCTURE, ELECTRICAL, MAGNETIC, AND OPTICAL PROPERTIES: Growth mechanism and photoluminescence of the SnO2 nanotwists on thin film and the SnO2 short nanowires on nanorods

    NASA Astrophysics Data System (ADS)

    Wang, Bing; Xu, Ping

    2009-01-01

    SnO2 nanotwists on thin film and SnO2 short nanowires on nanorods have been grown on single silicon substrates by using Au-Ag alloying catalyst assisted carbothermal evaporation of SnO2 and active carbon powders. The morphology and the structure of the prepared nanostructures are determined on the basis of field-emission scanning electron microscopy (FESEM), transmission electron microscopy (TEM), selected area electronic diffraction (SAED), high-resolution transmission electron microscopy (HRTEM), x-ray diffraction (XRD), Raman and photoluminescence (PL) spectra analysis. The new peaks at 356, 450, and 489 nm in the measured PL spectra of two kinds of SnO2 nanostructures are observed, implying that more luminescence centres exist in these SnO2 nanostructures due to nanocrystals and defects. The growth mechanism of these nanostructures belongs to the vapour-liquid-solid (VLS) mechanism.

  16. Standardization of Sn-113.

    PubMed

    Roteta, Miguel; Peyres, Virginia; García-Toraño, Eduardo

    2014-05-01

    The radionuclide (113)Sn is a quasi-monoenergetic gamma emitter often used in the efficiency calibration of gamma spectrometers in the energy region around 390keV. This paper presents the results of the standardization of this radionuclide by three methods: integral (4π-γ) counting with a well-type NaI(Tl) detector, liquid scintillation counting applying the CIEMAT-NIST method and 4π coincidence counting (conversion electron-X) with a digital coincidence system. PMID:24365465

  17. Performance improvement of Ge-Sb-Te material by GaSb doping for phase change memory

    SciTech Connect

    Lu, Yegang; Zhang, Zhonghua; Song, Sannian; Cheng, Limin; Song, Zhitang; Shen, Xiang; Wang, Guoxiang; Dai, Shixun

    2013-06-17

    Effects of GaSb doping on phase change characteristics of Ge-Sb-Te material are investigated by in situ resistance and x-ray diffraction measurement, optical spectroscopy, and x-ray photoelectron spectroscopy. The crystallization temperature and data retention of Ge-Sb-Te material increase significantly by the addition of GaSb, which results from the high thermal stability of amorphous GaSb. In addition, GaSb-doped Ge-Sb-Te material exhibits faster crystallization speed due to the change in electronic states as a result of the formation of chemical bonds with Ga element. Incorporation of GaSb is highly effective way to enhance the comprehensive performance of Ge-Sb-Te material for phase change memory.

  18. Formation of Intermetallic Compounds Between Liquid Sn and Various CuNi x Metallizations

    NASA Astrophysics Data System (ADS)

    Vuorinen, V.; Yu, H.; Laurila, T.; Kivilahti, J. K.

    2008-06-01

    Interfacial reactions between liquid Sn and various Cu-Ni alloy metallizations as well as the subsequent phase transformations during the cooling were investigated with an emphasis on the microstructures of the reaction zones. It was found that the extent of the microstructurally complex reaction layer (during reflow at 240°C) does not depend linearly on the Ni content of the alloy metallization. On the contrary, when Cu is alloyed with Ni, the rate of thickness change of the total reaction layer first increases and reaches a maximum at a composition of about 10 at.% Ni. The reaction layer is composed of a relatively uniform continuous (Cu,Ni)6Sn5 reaction layer (a uniphase layer) next to the NiCu metallizations and is followed by the two-phase solidification structures between the single-phase layer and Sn matrix. The thickness of the two-phase layer, where the intermetallic tubes and fibers have grown from the continuous interfacial (Cu,Ni)6Sn5 layer, varies with the Ni-to-Cu ratio of the alloy metallization. In order to explain the formation mechanism of the reaction layers and their observed kinetics, the phase equilibria in the Sn-rich side of the SnCuNi system at 240°C were evaluated thermodynamically utilizing the available data, and the results of the Sn/Cu x Ni1- x diffusion couple experiments. With the help of the assessed data, one can also evaluate the minimum Cu content of Sn-(Ag)-Cu solder, at which (Ni,Cu)3Sn4 transforms into (Cu,Ni)6Sn5, as a function of temperature and the composition of the liquid solders.

  19. DWPF simulant CPC studies for SB8

    SciTech Connect

    Koopman, D. C.; Zamecnik, J. R.

    2013-06-25

    The Savannah River National Laboratory (SRNL) accepted a technical task request (TTR) from Waste Solidification Engineering to perform simulant tests to support the qualification of Sludge Batch 8 (SB8) and to develop the flowsheet for SB8 in the Defense Waste Processing Facility (DWPF). These efforts pertained to the DWPF Chemical Process Cell (CPC). Separate studies were conducted for frit development and glass properties (including REDOX). The SRNL CPC effort had two primary phases divided by the decision to drop Tank 12 from the SB8 constituents. This report focuses on the second phase with SB8 compositions that do not contain the Tank 12 piece. A separate report will document the initial phase of SB8 testing that included Tank 12. The second phase of SB8 studies consisted of two sets of CPC studies. The first study involved CPC testing of an SB8 simulant for Tank 51 to support the CPC demonstration of the washed Tank 51 qualification sample in the SRNL Shielded Cells facility. SB8-Tank 51 was a high iron-low aluminum waste with fairly high mercury and moderate noble metal concentrations. Tank 51 was ultimately washed to about 1.5 M sodium which is the highest wash endpoint since SB3-Tank 51. This study included three simulations of the DWPF Sludge Receipt and Adjustment Tank (SRAT) cycle and Slurry Mix Evaporator (SME) cycle with the sludge-only flowsheet at nominal DWPF processing conditions and three different acid stoichiometries. These runs produced a set of recommendations that were used to guide the successful SRNL qualification SRAT/SME demonstration with actual Tank 51 washed waste. The second study involved five SRAT/SME runs with SB8-Tank 40 simulant. Four of the runs were designed to define the acid requirements for sludge-only processing in DWPF with respect to nitrite destruction and hydrogen generation. The fifth run was an intermediate acid stoichiometry demonstration of the coupled flowsheet for SB8. These runs produced a set of processing

  20. An Evaluation Method for Tensile Characteristics of Cu/Sn IMCs Using Miniature Composite Solder Specimen

    NASA Astrophysics Data System (ADS)

    Ohguchi, Ken-ichi; Kurosawa, Kengo

    2016-06-01

    In design of electronic packages, finite-element method (FEM) analysis for evaluating the strength and reliability of solder joints should be conducted with consideration of the presence of Cu/Sn intermetallic compounds (IMCs) generated at the interface between solder and copper wiring. To conduct such analysis accurately, the deformation characteristics of Cu/Sn IMCs must be clarified by conducting tensile tests. This paper describes a method to evaluate tensile characteristics of Cu/Sn IMCs. The method employs a composite specimen with first outer layer of Cu, second layer of Cu/Sn IMCs, and core of Sn-3.0Ag-0.5Cu lead-free solder. The specimen is made by a method in which a copper-plated solder specimen is heat treated at 453 K to generate Cu/Sn IMCs between the solder and copper. Tensile tests were conducted using the composite specimen. After the tests, the fracture appearance and characteristics of the stress-strain relations of the specimens were investigated. Based on the results, a numerical method based on the rule of mixtures (ROM) is proposed to estimate the stress-strain relation of Cu/Sn IMCs under tensile loading.

  1. Crystal structures of the new ternary stannides La3Mg4-xSn2+x and LaMg3-xSn2

    NASA Astrophysics Data System (ADS)

    Solokha, P.; De Negri, S.; Minetti, R.; Proserpio, D. M.; Saccone, A.

    2016-01-01

    Synthesis and structural characterization of the two new lanthanum-magnesium-stannides La3Mg4-xSn2+x (0.12≤x≤0.40) and LaMg3-xSn2 (0.33≤x≤0.78) are reported. The crystal structures of these intermetallics were determined by single crystal X-ray diffraction analysis and confirmed by Rietveld refinement of powder X-ray diffraction patterns of the corresponding samples. The La3Mg4-xSn2+x phase crystallizes in the hexagonal Zr3Cu4Si2 structure type (P6bar2m, hP9, Z=3, x=0.12(1), a=7.7974(7), c=4.8384(4) Å), which represents an ordered derivative of the hP9-ZrNiAl prototype, ubiquitous among equiatomic intermetallics. The LaMg3-xSn2 phase is the second representative of the trigonal LaMg3-xGe2 type, which is a superstructure of the LaLi3Sb2 structure type (P3bar1c, hP34-0.12, Z=6, x=0.35(1), a=8.3222(9), c=14.9546(16) Å). The scheme describing the symmetry reduction/coloring with respect to the parent type is reported here with the purpose to discuss the LaMg3-xSn2 off-stoichiometry from the geometrical point of view. Structural relationships between the La-Mg-Sn ternary phases, including the already known equiatomic LaMgSn compound (oP12-TiNiSi), are presented in the framework of the AlB2-related compounds family and discussed with the aid of group-subgroup relations in the Bärnighausen formalism.

  2. Sb(V) reactivity with human blood components: redox effects.

    PubMed

    López, Silvana; Aguilar, Luis; Mercado, Luis; Bravo, Manuel; Quiroz, Waldo

    2015-01-01

    We assessed the reactivity of Sb(V) in human blood. Sb(V) reactivity was determined using an HPLC-HG-AFS hyphenated system. Sb(V) was partially reduced to Sb(III) in blood incubation experiments; however, Sb(III) was a highly unstable species. The addition of 0.1 mol L(-1) EDTA prevented Sb(III) oxidation, thus enabling the detection of the reduction of Sb(V) to Sb(III). The transformation of Sb(V) to Sb(III) in human whole blood was assessed because the reduction of Sb(V) in human blood may likely generate redox side effects. Our results indicate that glutathione was the reducing agent in this reaction and that Sb(V) significantly decreased the GSH/GSSG ratio from 0.32 ± 0.09 to 0.07 ± 0.03. Moreover, the presence of 200 ng mL(-1) of Sb(V) increased the activity of superoxide dismutase from 4.4 ± 0.1 to 7.0 ± 0.4 U mL(-1) and decreased the activity of glutathione peroxidase from 62 ± 1 to 34 ± 2 nmol min(-1) mL(-1).

  3. Sb(V) Reactivity with Human Blood Components: Redox Effects

    PubMed Central

    López, Silvana; Aguilar, Luis; Mercado, Luis; Bravo, Manuel; Quiroz, Waldo

    2015-01-01

    We assessed the reactivity of Sb(V) in human blood. Sb(V) reactivity was determined using an HPLC-HG-AFS hyphenated system. Sb(V) was partially reduced to Sb(III) in blood incubation experiments; however, Sb(III) was a highly unstable species. The addition of 0.1 mol L−1 EDTA prevented Sb(III) oxidation, thus enabling the detection of the reduction of Sb(V) to Sb(III). The transformation of Sb(V) to Sb(III) in human whole blood was assessed because the reduction of Sb(V) in human blood may likely generate redox side effects. Our results indicate that glutathione was the reducing agent in this reaction and that Sb(V) significantly decreased the GSH/GSSG ratio from 0.32±0.09 to 0.07±0.03. Moreover, the presence of 200 ng mL−1 of Sb(V) increased the activity of superoxide dismutase from 4.4±0.1 to 7.0±0.4 U mL−1 and decreased the activity of glutathione peroxidase from 62±1 to 34±2 nmol min−1 mL−1. PMID:25615452

  4. Adsorption of Sb(III) and Sb(V) on Freshly Prepared Ferric Hydroxide (FeOxHy)

    PubMed Central

    He, Zan; Liu, Ruiping; Liu, Huijuan; Qu, Jiuhui

    2015-01-01

    Abstract This study prepared fresh ferric hydroxide (in-situ FeOxHy) by the enhanced hydrolysis of Fe3+ ions, and investigates its adsorptive behaviors toward Sb(III) and Sb(V) through laboratory and pilot-scale studies. A contact time of 120-min was enough to achieve adsorption equilibrium for Sb(III) and Sb(V) on the in-situ FeOxHy, and the Elovich model was best to describe the adsorption kinetics of Sb(III) and Sb(V). The Freundlich model was better than Langmuir model to describe the adsorption of Sb(III) and Sb(V) on the in-situ FeOxHy, and the maximum adsorption capacity of Sb(III) and Sb(V) was determined to be 12.77 and 10.21 mmol/g the in-situ FeOxHy as Fe, respectively. Adsorption of Sb(V) decreased whereas that of Sb(III) increased with elevated pH over pH 3–10, owing to the different electrical properties of Sb(III) and Sb(V). Adsorption of Sb(III) and Sb(V) was slightly affected by ionic strength, and thus indicated the formation of inner sphere complexes between Sb and the adsorbent. Sulfate and carbonate showed little effect on the adsorption of Sb(III) and Sb(V). Phosphate significantly inhibited the adsorption of Sb(V), whereas slightly effected that of Sb(III) due to its similar chemical structure to Sb(V). Pilot-scale continuous experiment indicated the feasibility of using in-situ FeOxHy to remove Sb(V), and equilibrium adsorption capacity at the equilibrium Sb(V) concentration of 10 μg/L was determined to be 0.11, 0.07, 0.07, 0.11, and 0.12 mg/g the in-situ FeOxHy as Fe at equilibrium pH of 7.5–7.7, 6.9–7.0, 6.3–6.6, 5.9–6.4, and 5.2–5.9, respectively. PMID:25741175

  5. Magnetic remanence in Yb14-xRExMnSb11 (RE=Tb, Dy, Ho) single crystals

    NASA Astrophysics Data System (ADS)

    Grebenkemper, Jason H.; Hu, Yufei; Abdusalyamova, M. N.; Makhmudov, F. A.; Kauzlarich, Susan M.

    2016-06-01

    Single crystals of Yb14-xRExMnSb11 (x~0.1, 0.4; RE = Tb, Dy, Ho) have been prepared as a solid solution by Sn flux reactions of the elements. They crystallize in the Ca14AlSb11 structure type in the I41/acd space group. The RE3+preferentially substitutes on the Yb(1) site which is the smallest volume Yb containing polyhedron. In the case of Ho3+, a small amount of Ho3+ also substitutes on the Yb(4) site. The ferromagnetic ordering temperature of Yb14MnSb11 is reduced from 53 K to 41 K as x increases and dependent on the identity of the RE. This is attributed to the reduction in carriers and reduced screening of the Mn2+ local moment. The effective moments, μeff, agree well with the calculated moments assuming the RE substitutes as a trivalent cation. The largest coercive field is observed for RE = Dy (1000 Oe). For the maximum x of Yb14-xRExMnSb11 there are enough carriers for the Ruderman-Kittel-Kasuya-Yosida (RKKY) mechanism of magnetic coupling via conduction electrons to still be valid in describing the ferromagnetic ordering.

  6. AgRISTARS

    NASA Technical Reports Server (NTRS)

    1984-01-01

    An introduction to the overall AgRISTARS program, a general statement on progress, and separate summaries of the activities of each project, with emphasis on the technical highlights are presented. Organizational and management information on AgRISTARS is included in the appendices, as is a complete bibliography of publication and reports.

  7. Geochemistry of the Patricia Zn-Pb-Ag Deposit (paguanta, NE Chile)

    NASA Astrophysics Data System (ADS)

    Chinchilla Benavides, D.; Merinero Palomares, R.; Piña García, R.; Ortega Menor, L.; Lunar Hernández, R.

    2013-12-01

    The Patricia Zn-Pb-Ag ore deposit is located within the Paguanta mining project, situated at the northern end of the Andean Oligocene Porphyry Copper Belt of Chile. The sulfide mineralization occurs as W-E oriented veins hosted in volcanic rocks, mainly andesite (pyroclastic, ash and lavas), of Upper Cretaceous to Middle Tertiary age. The ore mineralogy (obtained by EMPA analyses) comprises in order of abundance, pyrite, sphalerite (5.5 - 10.89 wt % Fe, 9.8-19 % molar FeS and 0.52 wt % Cd), galena, arsenopyrite, chalcopyrite and Ag-bearing sulfosalts. The veins show a zoned and banded internal structure with pyrite at the edges and sphalerite in the center. The Ag occurs mostly as Ag-Cu-Sb sulfosalts, in order of abundance: series freibergite - argentotennantite -polybasite and stephanite. Other minor Ag phases such as argentite, pyrargirite and diaphorite were also identified. These Ag phases are typically associated with the base-metal sulfides. Freibergite occurs filling voids within sphalerite, chalcopyrite and at the contact between sphalerite and galena. Polybasite, stephanite, pyrargirite and argentite are mostly in close association with freibergite. In the case of diaphorite, it commonly occurs filling voids between galena crystals or as inclusions within galena. Some minor Ag-bearing sulfosalts are also identified between pyrite crystals. The alteration minerals are dominated by chlorite, illite and kaolinite. The gangue minerals consist of quartz and carbonates identified by XRD as kutnahorite. We obtained linear correlation statistically significant only for Ag, As Au, Cd, Cu, Pb, Sb and Zn and therefore we generated an enhanced scatter plot matrix of these elements. Bulk rock analyses (ICP/MS and XRF) of drill cores show that Ag is strongly and positively correlated with Pb and As, moderately with Cd, Sb, Au and Zn and weakly with Cu, while Au is moderately and positively correlated with Ag, As, Cd, Sb and Zn and weakly with Cu and Pb. These results

  8. AGS experiments: 1993 - 1994 - 1995

    SciTech Connect

    Depken, J.C.

    1996-04-01

    This report contains: FY 1995 AGS Schedule as Run; FY 1996-97 AGE Schedule (working copy); AGS Beams 1995; AGS Experimental Area FY 1993 Physics Program; AGS Experimental Area FY 1994 Physics Program; AGS Experimental Area FY 1995 Physics Program; AGS Experimental Area FY 1996 Physics Program (In progress); A listing of experiments by number; Two-page summaries of each experiment begin here, also ordered by number; Listing of publications of AGS experiments begins here; and Listing of AGS experimenters begins here. This is the twelfth edition.

  9. Electronic Structure and Defect Physics of Tin Sulfides: SnS, Sn2S3 , and Sn S2

    NASA Astrophysics Data System (ADS)

    Kumagai, Yu; Burton, Lee A.; Walsh, Aron; Oba, Fumiyasu

    2016-07-01

    The tin sulfides SnS, Sn2S3 , and Sn S2 are investigated for a wide variety of applications such as photovoltaics, thermoelectrics, two-dimensional electronic devices, Li ion battery electrodes, and photocatalysts. For these applications, native point defects play important roles, but only those of SnS have been investigated theoretically in the literature. In this study, we consider the band structures, band-edge positions, and thermodynamical stability of the tin sulfides using a density functional that accounts for van der Waals corrections and the G W0 approximation. We revisit the point-defect properties, namely, electronic and atomic structures and energetics of defects, in SnS and newly examine those in Sn S2 and Sn2S3 with a comparison to those in SnS. We find that Sn S2 shows contrasting defect properties to SnS: Undoped SnS shows p -type behavior, whereas Sn S2 shows n type, which are mainly attributed to the tin vacancies and tin interstitials, respectively. We also find that the defect features in Sn2S3 can be described as a combination of those in SnS and Sn S2 , intrinsically Sn2S3 showing n -type behavior. However, the conversion to p type can be attained by doping with a large monovalent cation, namely, potassium. The ambipolar dopability, coupled with the earth abundance of its constituents, indicates great potential for electronic applications, including photovoltaics.

  10. In-situ monitoring of GaSb, GaInAsSb, and AlGaAsSb

    SciTech Connect

    Vineis, C.J. |; Wang, C.A.; Jensen, K.F.; Breiland, W.G.

    1998-06-01

    Suitability of silicon photodiode detector arrays for monitoring the spectral reflectance during epitaxial growths of GaSb, AlGaAsSb, and GaInAsSb, which have cutoff wavelengths of 1.7, 1.2, and 2.3 {micro}m, respectively, is demonstrated. These alloys were grown lattice matched to GaSb in a vertical rotating-disk reactor, which was modified to accommodate near normal reflectance without affecting epilayer uniformity. By using a virtual interface model, the growth rate and complex refractive index at the growth temperature are extracted for these alloys over the 600 to 950 nm spectral range. Excellent agreement is obtained between the extracted growth rate and that determined by ex-situ measurement. Optical constants are compared to theoretical predictions based on an existing dielectric function model for these materials. Furthermore, quantitative analysis of the entire reflectance spectrum yields valuable information on the approximate thickness of overlayers on the pregrowth substrate.

  11. TANK 40 FINAL SB5 CHEMICAL CHARACTERIZATION RESULTS PRIOR TO NP ADDITION

    SciTech Connect

    Bannochie, C.; Click, D.

    2010-01-06

    -252, and cold vapor atomic absorption (CV-AA) analysis for Hg. Equivalent dilutions of the peroxide fusion digestions and blank were submitted to AD for ICP-AES analysis. Tank 40 SB5 supernate was collected from a mixed slurry sample in the SRNL Shielded Cells and submitted to AD for ICP-AES. Weighted dilutions of slurry were submitted for ion chromatography (IC), total inorganic carbon/total organic carbon (TIC/TOC), and total base analyses. The following conclusions were drawn from the analytical results reported here: (1) The elemental ratios of the major elements for the SB5 WAPS sample, whose major Tank 51 Qualification sample component underwent Al dissolution, are similar to those measured for the SB4 WAPS sample. (2) The elemental composition of this sample and the analyses conducted here are reasonable and consistent with DWPF batch data measurements in light of DWPF pre-sample concentration and SRAT product heel contributions to the DWPF SRAT receipt analyses. (3) Fifty percent of the sulfur in the SB5 WAPS sample is insoluble, and this represents a significantly larger fraction than that observed in previous sludge batches. (4) The noble metal and Ag concentrations predicted from the measured values for the Tank 51 Confirmation sample and Tank 40 SB4 WAPS sample using a two-thirds Tank 51, one-third Tank 40 heel blend ratio used to arrive at the final SB5 composition, agree with the values for the Tank 40 SB5 WAPS sample measured for this report.

  12. TANK 40 FINAL SB5 CHEMICAL CHARACTERIZATION RESULTS PRIOR TO NP ADDITION

    SciTech Connect

    Bannochie, C; Damon Click, D

    2009-02-26

    -252, and cold vapor atomic absorption (CV-AA) analysis for Hg. Equivalent dilutions of the peroxide fusion digestions and blank were submitted to AD for ICP-AES analysis. Tank 40 SB5 supernate was collected from a mixed slurry sample in the SRNL Shielded Cells and submitted to AD for ICP-AES. Weighted dilutions of slurry were submitted for ion chromatography (IC), total inorganic carbon/total organic carbon (TIC/TOC), and total base analyses. The following conclusions were drawn from the analytical results reported here: (1) The elemental ratios of the major elements for the SB5 WAPS sample, whose major Tank 51 Qualification sample component underwent Al dissolution, are similar to those measured for the SB4 WAPS sample. (2) The elemental composition of this sample and the analyses conducted here are reasonable and consistent with DWPF batch data measurements in light of DWPF pre-sample concentration and SRAT product heel contributions to the DWPF SRAT receipt analyses. (3) Fifty percent of the sulfur in the SB5 WAPS sample is insoluble, and this represents a significantly larger fraction than that observed in previous sludge batches. (4) The noble metal and Ag concentrations predicted from the measured values for the Tank 51 Confirmation sample and Tank 40 SB4 WAPS sample using a two-thirds Tank 51, one-third Tank 40 heel blend ratio used to arrive at the final SB5 composition, agree with the values for the Tank 40 SB5 WAPS sample measured for this report.

  13. Hybrid InAsSb/CdSeTe heterostructures lattice-matched to GaSb

    NASA Astrophysics Data System (ADS)

    Sedova, I. V.; Sorokin, S. V.; Semenov, A. N.; L'vova, T. V.; Lyublinskaya, O. G.; Solov'ev, V. A.; Usikova, A. A.; Ivanov, S. V.

    2007-04-01

    We have studied molecular beam epitaxial growth of CdSeTe alloys on InAs1-xSbx layers (x˜0.06-0.1) nearly lattice-matched to GaSb(001) substrate. The preferential Se incorporation in the CdSeTe layers has been found. Sulfide passivation technique has been applied to the uncapped InAsSb surface to form the flat coherent InAsSb/CdSeTe heterovalent interface mediated by a ZnTe interface layer. The strong etching mode has been observed during the initial stage of InAsSb surface treatment in a 1M Na2S-water solution.

  14. Gallium substitutions as a means to stabilize alkaline-earth and rare-earth metal pnictides with the cubic Th{sub 3}P{sub 4} type: Synthesis and structure of A{sub 7}Ga{sub 2}Sb{sub 6} (A=Sr, Ba, Eu)

    SciTech Connect

    Xia Shengqing; Hullmann, Jonathan; Bobev, Svilen

    2008-08-15

    Three new compounds-Sr{sub 7.04(2)}Ga{sub 1.94(2)}Sb{sub 6}, Ba{sub 7.02(3)}Ga{sub 1.98(3)}Sb{sub 6} and Eu{sub 7.04(3)}Ga{sub 1.90(3)}Sb{sub 6}-have been synthesized from reactions of the corresponding elements using gallium as a metal flux. Their crystal structures (space group I4-bar 3d (No. 220), Z=2 with unit cell parameters: a=9.9147(9) A for the Sr-compound; a=10.3190(9) A for the Ba-compound; and a=9.7866(8) A for the Eu-compound) have been established by single-crystal X-ray diffraction. The structures are best described as Ga-stabilized derivatives of the hypothetical Sr{sub 4}Sb{sub 3}, Ba{sub 4}Sb{sub 3} and Eu{sub 4}Sb{sub 3} phases with the cubic Th{sub 3}P{sub 4} type. Such an inclusion of interstitial Ga atoms in this atomic arrangement results in the formation of isolated [Ga{sub 2}Sb{sub 6}]{sup 14-} fragments, isoelectronic and isostructural with the [Sn{sub 2}Te{sub 6}]{sup 6-} anions in the K{sub 3}SnTe{sub 3} type, and allows for the attainment of a charge-balanced electron count. In that sense, the Sr{sub 4}Sb{sub 3}, Ba{sub 4}Sb{sub 3} and Eu{sub 4}Sb{sub 3} binaries, which are expected to be electron-deficient and are currently unknown, can be 'turned' into Sr{sub 7}Ga{sub 2}Sb{sub 6}, Ba{sub 7}Ga{sub 2}Sb{sub 6} and Eu{sub 7}Ga{sub 2}Sb{sub 6}, whose structures are readily rationalized following the Zintl concept. - Graphical abstract: Three new antimonides have been structurally characterized by single-crystal X-ray diffraction. Their structures are best described as derivatives of the body-centered cubic, anti-Th{sub 3}P{sub 4} type. Unlike the one-electron-deficient A{sub 4}Sb{sub 3} phases (A=Sr, Ba, Eu), the new, A{sub 7}Ga{sub 2}Sb{sub 6} compounds are Zintl phases with closed-shell configurations for both the cations and anions.

  15. Quaternary PtMnCuX/C (X = Fe, Co, Ni, and Sn) and PtMnMoX/C (X = Fe, Co, Ni, Cu and Sn) alloys catalysts: Synthesis, characterization and activity towards ethanol electrooxidation

    NASA Astrophysics Data System (ADS)

    Ammam, Malika; Easton, E. Bradley

    2012-10-01

    In this account, two series of quaternary PtMnCuX/C (X = Fe, Co, Ni, and Sn) and PtMnMoX/C (X = Fe, Co, Ni, Cu and Sn) alloys catalysts have been synthesized and characterized by ICP, XRD, XPS, TEM and cyclic voltammetry. XRD spectra of each series illustrated that PtMnCuX/C (X = Fe, Co and Ni) and PtMnMoX/C (X = Fe, Co, Ni and Cu) alloys have been formed without significant free Mn, Cu, Mo or X co-catalysts. For PtMnCuSn/C and PtMnMoSn/C, in addition to alloy formation, significant free Sn-oxides are present in each catalyst. Cyclic voltammetry and chronoamperometry revealed that all quaternary showed superior electrocatalytic activity towards ethanol oxidation compared to the ternary precursor. Also, shift of the onset potential of ethanol oxidation towards less positive values were also recorded with the quaternary alloys, demonstrating a facilitated oxidation with the quaternary alloys compared to ternary alloy precursor. The magnitude of the gain in potential depend on the alloy composition and PtMnMoSn/C was found to be the best of all synthetized quaternary alloys with an onset potential of ethanol oxidation of only 0.059 V vs. Ag/AgCl.

  16. Quantum dots formed in InSb/AlAs and AlSb/AlAs heterostructures

    NASA Astrophysics Data System (ADS)

    Abramkin, D. S.; Rumynin, K. M.; Bakarov, A. K.; Kolotovkina, D. A.; Gutakovskii, A. K.; Shamirzaev, T. S.

    2016-06-01

    The crystal structure of new self-assembled InSb/AlAs and AlSb/AlAs quantum dots grown by molecularbeam epitaxy has been investigated by transmission electron microscopy. The theoretical calculations of the energy spectrum of the quantum dots have been supplemented by the experimental data on the steady-state and time-resolved photoluminescence spectroscopy. Deposition of 1.5 ML of InSb or AlSb on the AlAs surface carried out in the regime of atomic-layer epitaxy leads to the formation of pseudomorphically strained quantum dots composed of InAlSbAs and AlSbAs alloys, respectively. The quantum dots can have the type-I and type-II energy spectra depending on the composition of the alloy. The ground hole state in the quantum dot belongs to the heavy-hole band and the localization energy of holes is much higher than that of electrons. The ground electron state in the type-I quantum dots belongs to the indirect X XY valley of the conduction band of the alloy. The ground electron state in the type-II quantum dots belongs to the indirect X valley of the conduction band of the AlAs matrix.

  17. Coulomb excitation of 107Sn

    NASA Astrophysics Data System (ADS)

    DiJulio, D. D.; Cederkall, J.; Fahlander, C.; Ekström, A.; Hjorth-Jensen, M.; Albers, M.; Bildstein, V.; Blazhev, A.; Darby, I.; Davinson, T.; De Witte, H.; Diriken, J.; Fransen, Ch.; Geibel, K.; Gernhäuser, R.; Görgen, A.; Hess, H.; Iwanicki, J.; Lutter, R.; Reiter, P.; Scheck, M.; Seidlitz, M.; Siem, S.; Taprogge, J.; Tveten, G. M.; Van de Walle, J.; Voulot, D.; Warr, N.; Wenander, F.; Wimmer, K.

    2012-07-01

    The radioactive isotope 107Sn was studied using Coulomb excitation at the REX-ISOLDE facility at CERN. This is the lightest odd-Sn nucleus examined using this technique. The reduced transition probability of the lowest-lying 3/2+ state was measured and is compared to shell-model predictions based on several sets of single-neutron energies relative to 100Sn . Similar to the transition probabilities for the 2+ states in the neutron-deficient even-even Sn nuclei, the measured value is underestimated by shell-model calculations. Part of the strength may be recovered by considering the ordering of the d_{5/2} and g_{7/2} single-neutron states.

  18. Realistic shell-model calculations and exotic nuclei around {sup 132}Sn

    SciTech Connect

    Covello, A.; Itaco, N.; Coraggio, L.; Gargano, A.

    2008-11-11

    We report on a study of exotic nuclei around doubly magic {sup 132}Sn in terms of the shell model employing a realistic effective interaction derived from the CD-Bonn nucleon-nucleon potential. The short-range repulsion of the latter is renormalized by constructing a smooth low-momentum potential, V{sub low-k}, that is used directly as input for the calculation of the effective interaction. In this paper, we focus attention on proton-neutron multiplets in the odd-odd nuclei {sup 134}Sb, {sup 136}Sb. We show that the behavior of these multiplets is quite similar to that of the analogous multiplets in the counterpart nuclei in the {sup 208}Pb region, {sup 210}Bi and {sup 212}Bi.

  19. Simple air-gap fiber Fabry-Perot interferometers based on a fiber endface with Sn-microsphere overlay

    NASA Astrophysics Data System (ADS)

    Lee, Cheng-Ling; Hung, Cheng-Hung; Li, Chai-Ming; You, Yan-Wun

    2012-10-01

    This study presents a simple, cost-effective and sensitive air-gap fiber Fabry-Perot interferometer (AG-PPFI) which is based on a metal Tin (Sn)-overlaying fiber technique. An extremely small drop of metallic Sn was heated and then melted to shrink into a microsphere owing to the cohesion of the material. When a fiber was inserted into the melting Sn microsphere, an air gap was naturally formed between the fiber endface and the metal Sn during the cooling process. By carefully controlling the reaction time, various air-gaps can be formed as the Fabry-Perot interferometric cavities for the proposed AG-PPFIs. Measurements reveal that a smaller length of air-gap and heavier mass of Sn-microsphere are associated with higher sensitivity of temperature, but the former is dominated. A best temperature sensitivity of wavelength shift with +4.3 nm/°C is achieved when the air-gap is about 5 μm with mass of Sn-microsphere of about 10 μg. The variation of the wavelength shift is equivalent to sensitivity for a change in the cavity length of +14.83 nm/°C.

  20. Doped SnO₂ transparent conductive multilayer thin films explored by continuous composition spread.

    PubMed

    Lee, Jin Ju; Ha, Jong-Yoon; Choi, Won-Kook; Cho, Yong Soo; Choi, Ji-Won

    2015-04-13

    Mn-doped SnO₂ thin films were fabricated by a continuous composition spread (CCS) method on a glass substrate at room temperature to find optimized compositions. The fabricated materials were found to have a lower resistivity than pure SnO₂ thin films because of oxygen vacancies generated by Mn doping. As Mn content was increased, resistivity was found to decrease for limited doping concentrations. The minimum thin film resistivity was 0.29 Ω-cm for a composition of 2.59 wt % Mn-doped SnO₂. The Sn-O vibrational stretching frequency in FT-IR showed a blue shift, consistent with oxygen deficiency. Mn-doped SnO₂/Ag/Mn-doped SnO₂ multilayer structures were fabricated using this optimized composition deposited by an on-axis radio frequency (RF) sputter. The multilayer transparent conducting oxide film had a resistivity of 7.35 × 10⁻⁵ Ω-cm and an average transmittance above 86% in the 550 nm wavelength region. PMID:25761303

  1. Materials Data on Sn(SbTe2)2 (SG:166) by Materials Project

    SciTech Connect

    Kristin Persson

    2015-02-09

    Computed materials data using density functional theory calculations. These calculations determine the electronic structure of bulk materials by solving approximations to the Schrodinger equation. For more information, see https://materialsproject.org/docs/calculations

  2. Materials Data on Co4SnSb12 (SG:204) by Materials Project

    SciTech Connect

    Kristin Persson

    2015-03-08

    Computed materials data using density functional theory calculations. These calculations determine the electronic structure of bulk materials by solving approximations to the Schrodinger equation. For more information, see https://materialsproject.org/docs/calculations

  3. Materials Data on SnSb (SG:216) by Materials Project

    SciTech Connect

    Kristin Persson

    2014-11-02

    Computed materials data using density functional theory calculations. These calculations determine the electronic structure of bulk materials by solving approximations to the Schrodinger equation. For more information, see https://materialsproject.org/docs/calculations

  4. Cloning and expression analyses of Sucrose non-fermenting-1-Related Kinase 1 (SnRK1b) gene during development of sorghum and maize endosperm, and its implicated role in sugar-to-starch metabolic transition

    Technology Transfer Automated Retrieval System (TEKTRAN)

    A full-length cDNA clone, SbSnRK1b (1530 bp, GenBank accession no. EF544393), encoding a putative serine/threonine protein kinase homologue of yeast (Saccharomyces cerevisiae) SNF1, was isolated from developing endosperm of sorghum [Sorghum bicolor (Moench) L.]. Multiple sequence alignment data show...

  5. Sorghum Phytochrome B Inhibits Flowering in Long Days by Activating Expression of SbPRR37 and SbGHD7, Repressors of SbEHD1, SbCN8 and SbCN12

    PubMed Central

    Yang, Shanshan; Murphy, Rebecca L.; Morishige, Daryl T.; Klein, Patricia E.; Rooney, William L.; Mullet, John E.

    2014-01-01

    Light signaling by phytochrome B in long days inhibits flowering in sorghum by increasing expression of the long day floral repressors PSEUDORESPONSE REGULATOR PROTEIN (SbPRR37, Ma1) and GRAIN NUMBER, PLANT HEIGHT AND HEADING DATE 7 (SbGHD7, Ma6). SbPRR37 and SbGHD7 RNA abundance peaks in the morning and in the evening of long days through coordinate regulation by light and output from the circadian clock. 58 M, a phytochrome B deficient (phyB-1, ma3R) genotype, flowered ∼60 days earlier than 100 M (PHYB, Ma3) in long days and ∼11 days earlier in short days. Populations derived from 58 M (Ma1, ma3R, Ma5, ma6) and R.07007 (Ma1, Ma3, ma5, Ma6) varied in flowering time due to QTL aligned to PHYB/phyB-1 (Ma3), Ma5, and GHD7/ghd7-1 (Ma6). PHYC was proposed as a candidate gene for Ma5 based on alignment and allelic variation. PHYB and Ma5 (PHYC) were epistatic to Ma1 and Ma6 and progeny recessive for either gene flowered early in long days. Light signaling mediated by PhyB was required for high expression of the floral repressors SbPRR37 and SbGHD7 during the evening of long days. In 100 M (PHYB) the floral activators SbEHD1, SbCN8 and SbCN12 were repressed in long days and de-repressed in short days. In 58 M (phyB-1) these genes were highly expressed in long and short days. Furthermore, SbCN15, the ortholog of rice Hd3a (FT), is expressed at low levels in 100 M but at high levels in 58 M (phyB-1) regardless of day length, indicating that PhyB regulation of SbCN15 expression may modify flowering time in a photoperiod-insensitive manner. PMID:25122453

  6. Sorghum phytochrome B inhibits flowering in long days by activating expression of SbPRR37 and SbGHD7, repressors of SbEHD1, SbCN8 and SbCN12.

    PubMed

    Yang, Shanshan; Murphy, Rebecca L; Morishige, Daryl T; Klein, Patricia E; Rooney, William L; Mullet, John E

    2014-01-01

    Light signaling by phytochrome B in long days inhibits flowering in sorghum by increasing expression of the long day floral repressors PSEUDORESPONSE REGULATOR PROTEIN (SbPRR37, Ma1) and GRAIN NUMBER, PLANT HEIGHT AND HEADING DATE 7 (SbGHD7, Ma6). SbPRR37 and SbGHD7 RNA abundance peaks in the morning and in the evening of long days through coordinate regulation by light and output from the circadian clock. 58 M, a phytochrome B deficient (phyB-1, ma3R) genotype, flowered ∼60 days earlier than 100 M (PHYB, Ma3) in long days and ∼11 days earlier in short days. Populations derived from 58 M (Ma1, ma3R, Ma5, ma6) and R.07007 (Ma1, Ma3, ma5, Ma6) varied in flowering time due to QTL aligned to PHYB/phyB-1 (Ma3), Ma5, and GHD7/ghd7-1 (Ma6). PHYC was proposed as a candidate gene for Ma5 based on alignment and allelic variation. PHYB and Ma5 (PHYC) were epistatic to Ma1 and Ma6 and progeny recessive for either gene flowered early in long days. Light signaling mediated by PhyB was required for high expression of the floral repressors SbPRR37 and SbGHD7 during the evening of long days. In 100 M (PHYB) the floral activators SbEHD1, SbCN8 and SbCN12 were repressed in long days and de-repressed in short days. In 58 M (phyB-1) these genes were highly expressed in long and short days. Furthermore, SbCN15, the ortholog of rice Hd3a (FT), is expressed at low levels in 100 M but at high levels in 58 M (phyB-1) regardless of day length, indicating that PhyB regulation of SbCN15 expression may modify flowering time in a photoperiod-insensitive manner. PMID:25122453

  7. Impedance studies of the cell Ag/AgI/Ag beta alumina/AgI/Ag. Technical report No. 15, August 1987-August 1988

    SciTech Connect

    Breiter, M.W.; Drstak, H.; Maly-Schreiber, M.

    1988-07-01

    The construction of the cell Ag/AgI/Ag beta alumina/AgI/Ag is described. The impedance of this cell was measured between .001 and 10000 Hz at temperatures between 20 and 550 C. At temperatures below 100 C the cell impedance is determined to a large extent by the bulk resistance of the AgI layer and to a smaller extent by the impedance of the interface Ag/Agi. At temperatures between 160 and 350 C the impedance is controlled by the bulk resistance of the Ag beta alumina and an impedance due to contact problems between Ag and AgI. The bulk resistance of the beta' alumina becomes predominant between 350 and 550 C. A hindrance due to the transfer of silver ions from AgI to Ag beta' alumina was not observable in the whole temperature range.

  8. Controlled CVD growth of Cu-Sb alloy nanostructures.

    PubMed

    Chen, Jing; Yin, Zongyou; Sim, Daohao; Tay, Yee Yan; Zhang, Hua; Ma, Jan; Hng, Huey Hoon; Yan, Qingyu

    2011-08-12

    Sb based alloy nanostructures have attracted much attention due to their many promising applications, e.g. as battery electrodes, thermoelectric materials and magnetic semiconductors. In many cases, these applications require controlled growth of Sb based alloys with desired sizes and shapes to achieve enhanced performance. Here, we report a flexible catalyst-free chemical vapor deposition (CVD) process to prepare Cu-Sb nanostructures with tunable shapes (e.g. nanowires and nanoparticles) by transporting Sb vapor to react with copper foils, which also serve as the substrate. By simply controlling the substrate temperature and distance, various Sb-Cu alloy nanostructures, e.g. Cu(11)Sb(3) nanowires (NWs), Cu(2)Sb nanoparticles (NPs), or pure Sb nanoplates, were obtained. We also found that the growth of Cu(11)Sb(3) NWs in such a catalyst-free CVD process was dependent on the substrate surface roughness. For example, smooth Cu foils could not lead to the growth of Cu(11)Sb(3) nanowires while roughening these smooth Cu foils with rough sand papers could result in the growth of Cu(11)Sb(3) nanowires. The effects of gas flow rate on the size and morphology of the Cu-Sb alloy nanostructures were also investigated. Such a flexible growth strategy could be of practical interest as the growth of some Sb based alloy nanostructures by CVD may not be easy due to the large difference between the condensation temperature of Sb and the other element, e.g. Cu or Co. PMID:21757793

  9. Interfacial reaction of Sn-based solder joint in the package system

    NASA Astrophysics Data System (ADS)

    Gu, Huandi

    In this thesis, I report a study on the effect of the solder size on intermetallic layer formation by comparing the morphology change and growth rate of two different size solder joint aged at a same temperature for different aging time. The layer thickness and microstructure were analyzed using scanning electron microscopy (SEM). Photoshop was used to measure the thickness of intermetallic compound. Two different size of solder joints with composition of Sn-Ag-Cu (305) were used.

  10. Highly efficient electrochemical degradation of perfluorooctanoic acid (PFOA) by F-doped Ti/SnO2 electrode.

    PubMed

    Yang, Bo; Jiang, Chaojin; Yu, Gang; Zhuo, Qiongfang; Deng, Shubo; Wu, Jinhua; Zhang, Hong

    2015-12-15

    The novel F-doped Ti/SnO2 electrode prepared by SnF4 as the single-source precursor was used for electrochemical degradation of aqueous perfluorooctanoic acid (PFOA). Higher oxidation reactivity and significantly longer service life were achieved for Ti/SnO2-F electrode than Ti/SnO2-X (X=Cl, Br, I, or Sb) electrode, which could decomposed over 99% of PFOA (50 mL of 100 mg L(-1)) within 30-min electrolysis. The property of Ti/SnO2-F electrode and its electrooxidation mechanism were investigated by XRD, SEM-EDX, EIS, LSV, and interfacial resistance measurements. We propose that the similar ionic radii of F and O as well as strong electronegativity of F caused its electrochemical stability with high oxygen evolution potential (OEP) and smooth surface to generate weakly adsorbed OH. The preparation conditions of electrode were also optimized including F doping amount, calcination temperature, and dip coating times, which revealed the formation process of electrode. Additionally, the major mineralization product, F(-), and low concentration of shorter chain perfluorocarboxylic acids (PFCAs) were detected in solution. So the reaction pathway of PFOA electrooxidation was proposed by intermediate analysis. These results demonstrate that Ti/SnO2-F electrode is promising for highly efficient treatment of PFOA in wastewater. PMID:26183235

  11. Highly efficient electrochemical degradation of perfluorooctanoic acid (PFOA) by F-doped Ti/SnO2 electrode.

    PubMed

    Yang, Bo; Jiang, Chaojin; Yu, Gang; Zhuo, Qiongfang; Deng, Shubo; Wu, Jinhua; Zhang, Hong

    2015-12-15

    The novel F-doped Ti/SnO2 electrode prepared by SnF4 as the single-source precursor was used for electrochemical degradation of aqueous perfluorooctanoic acid (PFOA). Higher oxidation reactivity and significantly longer service life were achieved for Ti/SnO2-F electrode than Ti/SnO2-X (X=Cl, Br, I, or Sb) electrode, which could decomposed over 99% of PFOA (50 mL of 100 mg L(-1)) within 30-min electrolysis. The property of Ti/SnO2-F electrode and its electrooxidation mechanism were investigated by XRD, SEM-EDX, EIS, LSV, and interfacial resistance measurements. We propose that the similar ionic radii of F and O as well as strong electronegativity of F caused its electrochemical stability with high oxygen evolution potential (OEP) and smooth surface to generate weakly adsorbed OH. The preparation conditions of electrode were also optimized including F doping amount, calcination temperature, and dip coating times, which revealed the formation process of electrode. Additionally, the major mineralization product, F(-), and low concentration of shorter chain perfluorocarboxylic acids (PFCAs) were detected in solution. So the reaction pathway of PFOA electrooxidation was proposed by intermediate analysis. These results demonstrate that Ti/SnO2-F electrode is promising for highly efficient treatment of PFOA in wastewater.

  12. Growth of InSb and InAs(1-x)Sb(x) by OM-CVD

    NASA Technical Reports Server (NTRS)

    Chiang, P. K.; Bedair, S. M.

    1984-01-01

    Organometallic chemical vapor deposition (OM-CVD) growth of InSb and InAs(1-x)Sb(x) has been obtained using triethylindium (TEI), trimethylantimony (TMS), and arsine (AsH3) on (100) GaAs, (100) InSb, and (111)-B InSb substrates. InSb with excellent morphology was achieved on both (100) InSb and (111)-B InSb substrates. The measured electron mobility at 300 K of undoped InSb grown on (100) GaAs semi-insulating substrates was 40,000 sq cm/V-s at a carrier concentration of ND-NA = 2.0 x 10 to the 16th per cu cm. Carrier concentration of ND-NA = 1.2 x 10 to the 15th per cu cm has been measured at 77 K. InAs(1-x)Sb(x) (x = 0.07-0.75) with mirror-like surfaces have been grown on (100) InSb and InAs substrates. This composition range of x between 0.55 and 0.75 (Eg = 0.1 eV) has been successfully achieved for the first time. Solid composition variations as a function of growth temperature and InSb substrate orientations are also discussed.

  13. Growth and characterization of SiGeSn quantum well photodiodes.

    PubMed

    Fischer, Inga A; Wendav, Torsten; Augel, Lion; Jitpakdeebodin, Songchai; Oliveira, Filipe; Benedetti, Alessandro; Stefanov, Stefan; Chiussi, Stefano; Capellini, Giovanni; Busch, Kurt; Schulze, Jörg

    2015-09-21

    We report on the fabrication and electro-optical characterization of SiGeSn multi-quantum well PIN diodes. Two types of PIN diodes, in which two and four quantum wells with well and barrier thicknesses of 10 nm each are sandwiched between B- and Sb-doped Ge-regions, were fabricated as single-mesa devices, using a low-temperature fabrication process. We discuss measurements of the diode characteristics, optical responsivity and room-temperature electroluminescence and compare with theoretical predictions from band structure calculations. PMID:26406705

  14. Determination of Sb(III) and Sb(V) by HPLC-Online isotopic dilution-ICP MS.

    PubMed

    Fontanella, Maria Chiara; Beone, Gian Maria

    2016-01-01

    This work provides a method with application of valid techniques to extract and determinate inorganic species of antimony (Sb) for water. The procedure involves•the simultaneous accumulation of Sb(III) and Sb(V) on passive samplers like Diffusive Gradient in Thin Films (DGT) with iron (Fe) oxide gel, eliminating the risk of speciation changes due to transport and storage;•application of less concentrated acid (50 mM Na2EDTA) for elution and preservation of Sb species from DGT resin;•subsequent analytical determination of inorganic species with High Performance Liquid Chromatography-Isotopic Dilution-Inductively Coupled Plasma Mass Spectrometer (HPLC-ID-ICP MS) based on determination of the isotope ratio ((123)Sb/(121)Sb) of isotopes in the samples after spiking with 123Sb enriched standard solution, reducing the effect of signal drift and matrix effect on the final value. PMID:27408828

  15. SN 2009E: a faint clone of SN 1987A

    NASA Astrophysics Data System (ADS)

    Pastorello, A.; Pumo, M. L.; Navasardyan, H.; Zampieri, L.; Turatto, M.; Sollerman, J.; Taddia, F.; Kankare, E.; Mattila, S.; Nicolas, J.; Prosperi, E.; San Segundo Delgado, A.; Taubenberger, S.; Boles, T.; Bachini, M.; Benetti, S.; Bufano, F.; Cappellaro, E.; Cason, A. D.; Cetrulo, G.; Ergon, M.; Germany, L.; Harutyunyan, A.; Howerton, S.; Hurst, G. M.; Patat, F.; Stritzinger, M.; Strolger, L.-G.; Wells, W.

    2012-01-01

    Context.1987A-like events form a rare sub-group of hydrogen-rich core-collapse supernovae that are thought to originate from the explosion of blue supergiant stars. Although SN 1987A is the best known supernova, very few objects of this group have been discovered and, hence, studied. Aims: In this paper we investigate the properties of SN 2009E, which exploded in a relatively nearby spiral galaxy (NGC 4141) and that is probably the faintest 1987A-like supernova discovered so far. We also attempt to characterize this subgroup of core-collapse supernovae with the help of the literature and present new data for a few additional objects. Methods: The lack of early-time observations from professional telescopes is compensated by frequent follow-up observations performed by a number of amateur astronomers. This allows us to reconstruct a well-sampled light curve for SN 2009E. Spectroscopic observations which started about 2 months after the supernova explosion, highlight significant differences between SN 2009E and the prototypical SN 1987A. Modelling the data of SN 2009E allows us to constrain the explosion parameters and the properties of the progenitor star, and compare the inferred estimates with those available for the similar SNe 1987A and 1998A. Results: The light curve of SN 2009E is less luminous than that of SN 1987A and the other members of this class, and the maximum light curve peak is reached at a slightly later epoch than in SN 1987A. Late-time photometric observations suggest that SN 2009E ejected about 0.04 M⊙ of 56Ni, which is the smallest 56Ni mass in our sample of 1987A-like events. Modelling the observations with a radiation hydrodynamics code, we infer for SN 2009E a kinetic plus thermal energy of about 0.6 foe, an initial radius of ~7 × 1012 cm and an ejected mass of ~19 M⊙. The photospheric spectra show a number of narrow (v ≈ 1800 km s-1) metal lines, with unusually strong Ba II lines. The nebular spectrum displays narrow emission lines of

  16. Structures of tin cluster cations Sn3+ to Sn15+

    NASA Astrophysics Data System (ADS)

    Drebov, Nedko; Oger, Esther; Rapps, Thomas; Kelting, Rebecca; Schooss, Detlef; Weis, Patrick; Kappes, Manfred M.; Ahlrichs, Reinhart

    2010-12-01

    We employ a combination of ion mobility measurements and an unbiased systematic structure search with density functional theory methods to study structure and energetics of gas phase tin cluster cations, {Snn}^+, in the range of n = 3-15. For {Sn_{13}}^+ we also carry out trapped ion electron diffraction measurements to ascertain the results obtained by the other procedures. The structures for the smaller systems are most easily described by idealized point group symmetries, although they are all Jahn-Teller distorted: D_{3h} (trigonal bipyramid), D_{4h} (octahedron), D_{5h} (pentagonal bipyramid) for n = 5, 6, and 7. For the larger systems we find capped D_{5h} for {Sn8}^+ and {Sn9}^+, D_{3h} (tricapped trigonal prism) and D_{4d} (bicapped squared antiprism) plus adatoms for n = 10, 11, 14, and 15. A centered icosahedron with a peripheral atom removed is the dominant motif in {Sn_{12}}^+. For {Sn_{13}}^+ the calculations predict a family of virtually isoenergetic isomers, an icosahedron and slightly distorted icosahedra, which are about 0.25 eV below two C_1 structures. The experiments indicate the presence of two structures, one from the I_h family and a prolate C_1 isomer based on fused deltahedral moieties.

  17. Thermal fuse for high-temperature batteries

    DOEpatents

    Jungst, Rudolph G.; Armijo, James R.; Frear, Darrel R.

    2000-01-01

    A thermal fuse, preferably for a high-temperature battery, comprising leads and a body therebetween having a melting point between approximately 400.degree. C. and 500.degree. C. The body is preferably an alloy of Ag--Mg, Ag--Sb, Al--Ge, Au--In, Bi--Te, Cd--Sb, Cu--Mg, In--Sb, Mg--Pb, Pb--Pd, Sb--Zn, Sn--Te, or Mg--Al.

  18. Half-life measurement of 124Sb.

    PubMed

    Paepen, J; Altzitzoglou, T; Van Ammel, R; Sibbens, G; Pommé, S

    2010-01-01

    The half-life of (124)Sb was determined experimentally by following the decay of a source from a radiopure solution with a Centronic IG12 ionisation chamber. Thousands of measurements were performed over a period of 358 days, i.e. about six half-life periods. However, the data analysis was restricted to the first 221 days, in order to limit the dominant uncertainty component associated with the hypothetical possibility of a systematic error on background subtraction. The resulting value for the (124)Sb half-life, 60.212 (11) days, is found to be in very good agreement with published values, but carries a lower uncertainty. Major uncertainty contributions pertain to possible systematic errors in background correction, long-term changes in source-detector geometry and medium- and long-term instability of the instrument. Additional measurements were performed with a high-purity germanium detector to confirm the above value.

  19. Syntheses, crystal structures, and NLO properties of the quaternary sulfides RE{sub 3}Sb{sub 0.33}SiS{sub 7} (RE=La, Pr)

    SciTech Connect

    Zhao, Hua-Jun

    2015-07-15

    Two quaternary sulfides RE{sub 3}Sb{sub 0.33}SiS{sub 7} (RE=La, Pr) have been prepared from stoichiometric mixtures of elements at 1223 K in an evacuated silica tube. They are the first examples of chalcogenides in the quaternary RE/Si/Sb/Q (RE=rare earth metal; Q=S, Se, Te) system. These two isostructural materials crystallize in the Ce{sub 3}Al{sub 1.67}S{sub 7} structure type in the hexagonal space group P6{sub 3}. Their structure features one-dimensional chains of face-sharing SbS{sub 6} octahedra running parallel to the c direction surrounded by the discrete SiS{sub 4} tetrahedra and RE cations. The La{sub 3}Sb{sub 0.33}SiS{sub 7} exhibits a SHG signal about 0.5 times that of the commercially used IR NLO material AgGaS{sub 2} at 2.05 μm laser. The optical gap of 1.92 eV for La{sub 3}Sb{sub 0.33}SiS{sub 7} was deduced from UV/Vis reflectance spectroscopy. - Graphical abstract: The RE{sub 3}Sb{sub 0.33}SiS{sub 7} (RE=La, Pr), crystalling in the Ce{sub 3}Al{sub 1.67}S{sub 7} structure type, have been prepared. The La{sub 3}Sb{sub 0.33}SiS{sub 7} exhibits a SHG signal about 0.5 times that of the IR NLO material AgGaS{sub 2}. - Highlights: • The RE{sub 3}Sb{sub 0.33}SiS{sub 7} (RE=La, Pr), crystalling in the Ce{sub 3}Al{sub 1.67}S{sub 7} structure type, have been prepared. • The La{sub 3}Sb{sub 0.33}SiS{sub 7} exhibits a SHG signal about 0.5 times that of the IR NLO material AgGaS{sub 2}. • The optical gap of 1.92 eV for La{sub 3}Sb{sub 0.33}SiS{sub 7} was deduced from UV/Vis reflectance spectroscopy.