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Sample records for al co-doped zno

  1. (Al, Er) co-doped ZnO nanoparticles for photodegradation of rhodamine blue

    NASA Astrophysics Data System (ADS)

    Ghomri, R.; Shaikh, M. Nasiruzzaman; Ahmed, M. I.; Bououdina, M.; Ghers, M.

    2016-10-01

    Pure and co-doped (Al, Er) ZnO nanoparticles (NPs) have been synthesized by hydrothermal method using (Zn, Er and Al) nitrates. X-ray diffraction patterns reveal the formation of single phase of ZnO würtzite-type structure. The crystallite size for pure ZnO is in the order of 26.5 nm which decreases up to the range 14.2-22.0 nm after (Al, Er) co-doping. SEM micrographs show that the specimen is composed of regular spherical particles in the nanoscale regime with homogeneous size distribution and high tendency to agglomeration. FTIR spectra exhibit absorption lines located at wavenumbers corresponding to vibration modes between the constituent atoms. Raman spectra recorded under excitation ( λ exc = 632.8 nm) reveal peaks related to modes of transverse and longitudinal optical phonons of the würtzite ZnO structure. The energy band gap E g of ZnO:(Al, Er) NPs ranges in 3.264-3.251 eV. The photocatalytic activity of pure and co-doped (Al, Er) ZnO NPs was evaluated by the photodegradation of rhodamine blue under an irradiation of wavelength 554 nm. It is found that a photodegradation rate above 90 % could be achieved for a period of time of 40 min for pure ZnO and 120 min for (Al, Er) co-doped ZnO. A photodegradation mechanism is proposed.

  2. Thermoelectric Properties of ZnO Ceramics Co-Doped with Al and Transition Metals

    NASA Astrophysics Data System (ADS)

    Yamaguchi, Hiroyuki; Chonan, Yasunori; Oda, Manabu; Komiyama, Takao; Aoyama, Takashi; Sugiyama, Shigeaki

    2011-05-01

    The effect of co-doping with transition metals (Fe, Ni, and Sm) on the thermoelectric properties of Al-doped ZnO (AZO) ceramics was studied. The electrical conductivity σ of AZO was significantly (12%) increased by Ni co-doping, while an unfavorable deterioration in σ was observed for Fe- or Sm-co-doped AZO. Hall-effect measurements indicated that the electron mobility of AZO decreased due to co-doping in all samples. Only the Ni-co-doped AZO sample showed significant enhancement in electron density, resulting in its black color. The thermal conductivity κ decreased drastically due to Ni or Sm co-doping of AZO, while only a small change was observed for Fe co-doping of AZO. The κ value at 1073 K for Ni-co-doped AZO was 77% of that for AZO. A dimensionless figure of merit ZT = 0.126 was attained at 1073 K for Ni-co-doped AZO, representing an improvement over that of conventional AZO by a factor of 1.50.

  3. Electron transport in Al-Cu co-doped ZnO thin films

    NASA Astrophysics Data System (ADS)

    Serin, T.; Atilgan, A.; Kara, I.; Yildiz, A.

    2017-03-01

    To investigate the influence of varying Al content on structural, optical, and electrical properties of ZnO thin films, Al-Cu co-doped ZnO thin films with fixed Cu content at 1 wt. % and different Al contents (1, 3, and 5 wt. %) were successfully synthesized on glass substrates using a sol-gel process. The results indicated that the varying Al content affects not only the grain size and band gap but also the electrical conductivity of the films, and a linear relationship was found between the band gap and strain values of the films. The temperature-dependent electrical conductivity data of the films demonstrated that electron transport was mainly controlled by the grain boundaries at intermediate and high temperatures, whereas it was governed by Mott-variable range hopping at low temperatures. Additionally, 3 wt. % Al content improved the electrical conductivity of Al-Cu co-doped ZnO by lowering the trap density and enhancing the hopping probability.

  4. Local structure analysis of diluted magnetic semiconductor Co and Al co-doped ZnO nanoparticles

    SciTech Connect

    Hyodo, K.; Morimoto, S.; Yamazaki, T.; Ishikawa, T.; Ichiyanagi, Y.; Utsumi, J.

    2016-02-01

    In this study, Co and Al ions co-doped ZnO nanoparticles (Zn(Al, Co)O NPs) were prepared by our original chemical preparation method. The obtained samples prepared by this method, were encapsulated in amorphous SiO{sub 2}. X-ray diffraction (XRD) results showed Zn(Al, Co)O NPs had a single-phase nature with hexagonal wurtzite structure. These particle sizes could be controlled to be approximately 30 nm. We investigate the effect that the increase in the carrier has on the magnetization by doping Al to Co-doped ZnO NPs. The local structures were qualitatively analyzed using X-ray absorption fine structure (XAFS) measurements.

  5. Sol-gel derived Al and Ga co-doped ZnO thin films: An optoelectronic study

    NASA Astrophysics Data System (ADS)

    Ebrahimifard, Reza; Golobostanfard, Mohammad Reza; Abdizadeh, Hossein

    2014-01-01

    Al and Ga co-doped ZnO (AGZO) thin films with different doping contents of 0.5-4 at.% were synthesized via sol-gel route using dip coating method and the results were compared to the single doped specimens Al:ZnO (AZO) and Ga:ZnO (GZO). All samples were highly transparent in visible region (T > 85%) with band gap values around 3.3 eV. Introduction of Al and Ga to the ZnO crystal structure decreased the crystallinity and reduced the particle size of the films. Electrical resistivity was investigated and engineered in this study as the main parameter. Single doped samples showed reduction of resistivity compared to the un-doped ZnO. In this regard, Ga was more efficient than Al in decreasing the electrical resistivity. Furthermore, samples with 1 at.% Al and 1 at.% Ga showed the minimum amount of electrical resistivity. Co-doping was performed with two different approaches including variable doping content (Al + Ga ≠ cte) and constant doping content (Al + Ga = 0.5, 1, and 2 at.%) for the sake of the comparison with single doped samples. Samples with Al = 1 at.% and Ga = 1 at.% showed the lowest electrical resistivity in AGZO samples of former approach. However, in latter approach the lowest resistivity was obtained in Al + Ga = 2 at.% sample. The results proved the capability of co-doped samples in optoelectronic industry regarding partially substitution of expensive Ga with Al and obtaining co-doped AGZO transparent conductive thin films with lower resistivity compared to conventional AZO thin films and also achieving commercial advantages compared to costly GZO thin films.

  6. RETRACTED: Investigation of structural, optical and electronic properties in Al-Sn co-doped ZnO thin films

    NASA Astrophysics Data System (ADS)

    Pan, Zhanchang; Tian, Xinlong; Wu, Shoukun; Yu, Xia; Li, Zhuliang; Deng, Jianfeng; Xiao, Chumin; Hu, Guanghui; Wei, Zhigang

    2013-01-01

    This article has been retracted: please see Elsevier Policy on Article Withdrawal (http://www.elsevier.com/locate/withdrawalpolicy). This article has been retracted at the request of the Editor-in-Chief. Figures 3 and 4 of this paper have also been presented as belonging to other materials in other publications. This observation is evidence of fraud and therefore it is not certain that the described research and conclusions of this paper belong to the presented images. Figures 3 and 4 of this paper can also be found in: Effect of annealing on the structures and properties of Al and F co-doped ZnO nanostructures, Materials Science in Semiconductor Processing, 2014, 17, 162-167, http://dx.doi.org/10.1016/j.mssp.2013.09.023 Highly transparent and conductive Sn/F and Al co-doped ZnO thin films prepared by sol-gel method, Journal of Alloys and Compounds, 2014,583, 32-38, http://dx.doi.org/10.1016/j.jallcom.2013.06.192 Properties of fluorine and tin co-doped ZnO thin films deposited by sol-gel method, Journal of Alloys and Compounds, 2013,576, 31-37, http://dx.doi.org/10.1016/j.jallcom.2013.04.132

  7. Hydrothermal growth and conductivity enhancement of (Al, Cu) co-doped ZnO nanorods thin films

    NASA Astrophysics Data System (ADS)

    Chakraborty, Mohua; Mahapatra, Preetilata; Thangavel, R.

    2016-05-01

    The incorporation of Al, Cu co-doping in ZnO host lattice plays an important role in modification of structural, optical and electrical properties in optoelectronic devices. In the present work, we were grown one dimensional ZnO nanorods (NRs) doped with different concentration of Al (0%~5%) and Cu was kept 20 M% on ITO glass substrates using a facile hydrothermal method, and investigated the effect of the codoping on the surface morphology and the electrical and optical performances of the doped ZnO NRs as photo anodes for solar water splitting applications. The crystallite size of NRs shows tuning in the band gap between 3.194 (Zn0.79Al0.01Cu0.2O) to 3.212 eV (Zn0.75Al0.05Cu0.2O) with Aluminium doping concentration and a remarkable improvement in current density (J) from 0.05 mA/cm2 to 4.98 mA/cm2 was achieved by incorporating Al and Cu has a critical effect of ZnO nanorods.

  8. Effect of annealing atmosphere on photoluminescence and gas sensing of solution-combustion-synthesized Al, Pd co-doped ZnO nanoparticles

    NASA Astrophysics Data System (ADS)

    Li, Yan; Liu, Min; Lv, Tan; Wang, Qiong; Zou, Yun-ling; Lian, Xiao-xue; Liu, Hong-peng

    2015-11-01

    Al, Pd co-doped ZnO nanoparticles (NPs) synthesized using a solution combustion method and subsequent annealing process under various atmospheres, including air, nitrogen, and hydrogen, were characterized using x-ray diffraction, energy-dispersive x-ray spectroscopy, field-emission scanning electron microscopy, transmission electron microscopy, and photoluminescence spectroscopy. The gas-sensing properties of the sensors based on the NPs were also examined. The results indicated that the Al, Pd co-doped ZnO NPs, with an average crystallite size of 10 nm, exhibited enhanced gas-sensing performance compared with that of pure ZnO and Al-doped ZnO. The response of the Al, Pd co-doped ZnO NPs annealed in N2 to ethanol (49.22) was nearly 5.7 times higher than that to acetone (8.61) and approximately 20 - 27 times higher than that to benzene (2.38), carbon monoxide (2.23), and methane (1.78), which demonstrates their excellent selectivity to ethanol versus other gases. This high ethanol response can be attributed to the combined effects of the small size, Schottky barrier, lattice defects, and catalysis. [Figure not available: see fulltext.

  9. Origin of Ferromagnetism in Al and Ni Co-doped ZnO Based DMS Materials

    NASA Astrophysics Data System (ADS)

    Murtaza, Saleem; Saadat, A. Siddiqi; Shahid, M. Ramay; Shahid, Atiq; Shahzad, Naseem

    2012-10-01

    Zn0.95Ni0.05O and Zn0.90Ni0.05Al0.05O compositions of nanocrystallites are synthesised using the well recognised auto-combustion technique. The x-ray diffraction patterns demonstrate the phase pure characteristic wurtzite-type crystal structure with space group P63mc in both the compositions. The elemental incorporation of Ni and Al contents into the ZnO structure is confirmed by energy dispersive x-ray analysis. The micrographs of scanning electron microscopy show an approximate ordered morphology. The electrical resistivity is observed to decrease with the rising temperature, depicting the characteristic semiconductor behaviour of the samples. The lower values of resistivity and ferromagnetic interactions in the Al-doped sample correspond to an increase of carrier's density. It is observed that the carrier mediated mechanism is mainly responsible for ferromagnetism in ZnO-based diluted magnetic semiconductors.

  10. Preparation and characterization of n-type conductive (Al, Co) co-doped ZnO thin films deposited by sputtering from aerogel nanopowders

    NASA Astrophysics Data System (ADS)

    El Mir, L.; Ayadi, Z. Ben; Saadoun, M.; Djessas, K.; von Bardeleben, H. J.; Alaya, S.

    2007-11-01

    Highly transparent, n-type conducting ZnO thin films were obtained by low temperature magnetron sputtering of (Co, Al) co-doped ZnO nanocrystalline aerogels. The nanoparticles of ˜30 nm size were synthesized by a sol-gel method using supercritical drying in ethyl alcohol. The structural, optical and electrical properties of the films were investigated. The ZnO films were polycrystalline textured, preferentially oriented with the (0 0 2) crystallographic direction normal to the film plane. The films show within the visible wavelength region an optical transmittance of more than 90% and a low electrical resistivity of 3.5 × 10 -4 Ω cm at room temperature.

  11. N and Al co-doping as a way to p-type ZnO without post-growth annealing

    NASA Astrophysics Data System (ADS)

    Snigurenko, Dymitr; Guziewicz, Elzbieta; Krajewski, Tomasz A.; Jakiela, Rafal; Syryanyy, Yevgen; Kopalko, Krzysztof; Paszkowicz, Wojciech

    2016-12-01

    We demonstrate experimental results on p-type ZnO films grown by atomic layer deposition (ALD) and co-doped with aluminum and nitrogen (ANZO). The films were obtained at low temperature (100 °C) with different N to Al ratio and show conductivity type, which depends on the N and Al content. We applied the x-ray photoelectron spectroscopy in order to get insight into a chemical nature of dopants and we found three pronounced contributions of the N1s core level which appear at binding energies of 396.1, 397.4 and around 399 eV. Based on ANZO and undoped ZnO films, both grown by the ALD technique, the ZnO homojunction was obtained in one technological process without any post-growth high temperature processing. The rectification ratio as high as 4 × 104 at ± 2 V was achieved when an ultrathin Al2O3 layer was inserted between p- and n-type ZnO and a n-type ZnO buffer layer deposited on an insulating Si substrate was applied.

  12. Effect of substrate temperature on transparent conducting Al and F co-doped ZnO thin films prepared by rf magnetron sputtering

    NASA Astrophysics Data System (ADS)

    Wang, Fang-Hsing; Chang, Chiao-Lu

    2016-05-01

    ZnO is a wide bandgap semiconductor that has many potential applications such as solar cells, thin film transistors, light emitting diodes, and gas/biological sensors. In this study, a composite ceramic ZnO target containing 1 wt% Al2O3 and 1.5 wt% ZnF2 was prepared and used to deposit transparent conducting Al and F co-doped zinc oxide (AFZO) thin films on glass substrates by radio frequency magnetron sputtering. The effect of substrate temperatures ranging from room temperature (RT) to 200 °C on structural, morphological, electrical, chemical, and optical properties of the deposited thin films were investigated by X-ray diffraction (XRD), field emission scanning electron microscopy (FE-SEM), atomic force microscopy (AFM), Hall effect measurement, X-ray photoelectron spectroscopy, secondary ion mass spectrometry, and UV-vis spectrophotometer. The XRD results showed that all the AFZO thin films had a (0 0 2) diffraction peak, indicating a typical wurtzite structure with a preferential orientation of the c-axis perpendicular to the substrate. The FE-SEM and AFM analyses indicated that the crystallinity and grain size of the films were enhanced while the surface roughness decreased as the substrate temperature increased. Results of Hall effect measurement showed that Al and F co-doping decreased the resistivity more effectively than single-doping (either Al or F doping) in ZnO thin films. The resistivity of the AFZO thin films decreased from 5.48 × 10-4 to 2.88 × 10-4 Ω-cm as the substrate temperature increased from RT to 200 °C due to the increased carrier concentration and Hall mobility. The optical transmittances of all the AFZO thin films were over 92% in the wavelength range of 400-800 nm regardless of substrate temperature. The blue-shift of absorption edge accompanied the rise of the optical band gap, which conformed to the Burstein-Moss effect. The developed AFZO thin films are suitable as transparent conducting electrodes for various optoelectronic

  13. Structural and optical properties of nanoparticles (V, Al) co-doped ZnO synthesized by sol-gel processes

    NASA Astrophysics Data System (ADS)

    El Ghoul, J.; Bouguila, N.; Gómez-Lopera, S. A.; El Mir, L.

    2013-12-01

    ZnO, Zn0.9V0.1O and Zn0.89V0.1Al0.01O nanoparticles have been prepared by a sol-gel method and their structural and optical properties have been investigated. The obtained nanopowder was characterised by various techniques such as X-ray diffraction (XRD), transmission electron microscopy (TEM) and photoluminescence (PL) spectroscopy. After thermal treatment at 500 °C in air, the powder of Zn0.89V0.1Al0.01O with an average particle size of 25 nm presents a strong luminescence band in the visible range. The PL band energy position presents a small blue shift with the increase of measurement temperature. Different possible attributions of this emission band will be discussed.

  14. Co doped ZnO nanowires as visible light photocatalysts

    NASA Astrophysics Data System (ADS)

    Šutka, Andris; Käämbre, Tanel; Pärna, Rainer; Juhnevica, Inna; Maiorov, Mihael; Joost, Urmas; Kisand, Vambola

    2016-06-01

    High aspect ratio cobalt doped ZnO nanowires showing strong photocatalytic activity and moderate ferromagnetic behaviour were successfully synthesized using a solvothermal method and characterized by scanning electron microscopy (SEM), X-ray powder diffraction (XRD), X-ray photoelectron spectroscopy (XPS), X-ray absorption spectroscopy (XAS), vibrating sample magnetometry (VSM) and UV-visible absorption spectroscopy. The photocatalytic activities evaluated for visible light driven degradation of an aqueous methylene orange (MO) solution were higher than for Co doped ZnO nanoparticles at the same doping level and synthesized by the same synthesis route. The rate constant for MO visible light photocatalytic degradation was 1.9·10-3 min-1 in case of nanoparticles and 4.2·10-3 min-1 in case of nanowires. We observe strongly enhanced visible light photocatalytic activity for moderate Co doping levels, with an optimum at a composition of Zn0.95Co0.05O. The enhanced photocatalytic activities of Co doped ZnO nanowires were attributed to the combined effects of enhanced visible light absorption at the Co sites in ZnO nanowires, and improved separation efficiency of photogenerated charge carriers at optimal Co doping.

  15. Controlled fabrication of oriented co-doped ZnO clustered nanoassemblies.

    PubMed

    Barick, K C; Aslam, M; Dravid, Vinayak P; Bahadur, D

    2010-09-01

    Clustered nanoassemblies of Mn doped ZnO and co-doped ZnO (Mn, Sn co-doped ZnO; Mn, Sb co-doped ZnO; and Mn, Bi co-doped ZnO) were prepared by refluxing their respective precursors in diethylene glycol medium. The co-doping elements, Sn, Sb and Bi exist in multi oxidation states by forming Zn-O-M (M=Sb, Bi and Sn) bonds in hexagonal wurtzite nanostructure. The analyses of detailed structural characterization performed by XRD, X-ray photoelectron spectroscopy (XPS) and high resolution transmission electron microscopy (HRTEM), show that co-doping ions are successfully incorporated into the ZnO nanostructure and do not appear as precipitates or secondary phases. HRTEM analysis also confirmed the oriented attachment of nanocrystals as well as their defect structures. The formation/activation of higher amount of intrinsic host defects, for instance, oxygen vacancies in co-doped ZnO as compared to Mn doped ZnO sample is evident from Raman spectra. The doped and co-doped samples exhibit ferromagnetic like behavior at room temperature presumably due to the presence of defects. Specifically, it has been observed that the incorporation of dopant and co-dopants into ZnO structure can modulate the local electronic structure due to the formation/activation of defects and hence, cause significant changes in their structural, vibrational, optical and magnetic properties.

  16. Structural, magnetic and electronic structure properties of Co doped ZnO nanoparticles

    SciTech Connect

    Kumar, Shalendra; Song, T.K.; Gautam, Sanjeev; Chae, K.H.; Kim, S.S.; Jang, K.W.

    2015-06-15

    Highlights: • XRD and HR-TEM results show the single phase nature of Co doped ZnO nanoparticles. • XMCD and dc magnetization results indicate the RT-FM in Co doped ZnO nanoparticles. • Co L{sub 3,2} NEXAFS spectra infer that Co ions are in 2+ valence state. • O K edge NEXAFS spectra show that O vacancy increases with Co doping in ZnO. - Abstract: We reported structural, magnetic and electronic structure studies of Co doped ZnO nanoparticles. Doping of Co ions in ZnO host matrix has been studied and confirmed using various methods; such as X-ray diffraction (XRD), field emission scanning electron microscopy (FE-SEM), energy dispersed X-ray (EDX), high resolution transmission electron microscopy (HR-TEM), Fourier transform infrared spectroscopy (FT-IR), near edge X-ray absorption fine structure (NEXAFS) spectroscopy, magnetic hysteresis loop measurements and X-ray magnetic circular dichroism (XMCD). From the XRD and HR-TEM results, it is observed that Co doped ZnO nanoparticles have single phase nature with wurtzite structure and exclude the possibility of secondary phase formation. FE-SEM and TEM micrographs show that pure and Co doped nanoparticles are nearly spherical in shape. O K edge NEXAFS spectra indicate that O vacancies increase with Co doping. The Co L{sub 3,2} edge NEXAFS spectra revealed that Co ions are in 2+ valence state. DC magnetization hysteresis loops and XMCD results clearly showed the intrinsic origin of temperature ferromagnetism in Co doped ZnO nanoparticles.

  17. Influence of defects on electrical properties of electrodeposited co-doped ZnO nanocoatings

    NASA Astrophysics Data System (ADS)

    Simimol, A.; Anappara, Aji A.; Barshilia, Harish C.

    2017-01-01

    We present a systematic investigation of the electrical properties of undoped and Co-doped ZnO nanostructures at room temperature as an extensive study of the role of defects in ZnO. The ZnO nanostructures were fabricated by the electrodeposition method at low bath temperature (80 °C) and the Co concentration was varied from 0.01 to 0.2 mM. Electrical properties of the undoped and Co-doped ZnO nanostructures were studied in detail. The carrier concentration increases while the mobility reduces with increase in Co-concentration. The resistivity increases with an increase in Co-concentration and the reason is correlated with the defects in ZnO. In order to understand more details of the role of defects in the present I-V characteristic behavior of the Co-doped ZnO, high temperature vacuum annealing of ZnO sample was carried out. Electrical, optical and magnetic properties of the high temperature vacuum annealed ZnO were studied in detail. Photoluminescence spectroscopy (PL) results revealed more information of the defect levels which act as scattering centers for the carriers. Co-doping as well as annealing at high temperature in vacuum environment tunes the defects in ZnO and which influence the optical, magnetic and electrical behavior of the ZnO nanostructures.

  18. Ni, Fe Co-doped ZnO nanoparticles synthesized by solution combustion method

    SciTech Connect

    Dhiman, Pooja Chand, Jagdish Verma, S. Sarveena, Singh, M.

    2014-04-24

    This paper outlines the synthesis and characterization of Ni-Fe co-doped ZnO nanoparticles by facile solution combustion method. The structural characterization by XRD confirmed the phase purity of the samples. Surface morphology studied by scanning electron microscope revealed cubic type shape of grains. EDS analysis conformed the elemental composition. Higher value of DC electrical conductivity and less band gap for co-doped ZnO from UV-Vis studies confirmed the change in defect chemistry of ZnO Matrix.

  19. Ni, Fe Co-doped ZnO nanoparticles synthesized by solution combustion method

    NASA Astrophysics Data System (ADS)

    Dhiman, Pooja; Chand, Jagdish; Verma, S.; Sarveena, Singh, M.

    2014-04-01

    This paper outlines the synthesis and characterization of Ni-Fe co-doped ZnO nanoparticles by facile solution combustion method. The structural characterization by XRD confirmed the phase purity of the samples. Surface morphology studied by scanning electron microscope revealed cubic type shape of grains. EDS analysis conformed the elemental composition. Higher value of DC electrical conductivity and less band gap for co-doped ZnO from UV-Vis studies confirmed the change in defect chemistry of ZnO Matrix.

  20. Influence of Co doping on combined photocatalytic and antibacterial activity of ZnO nanoparticles

    NASA Astrophysics Data System (ADS)

    Anandan, M.; Dinesh, S.; Krishnakumar, N.; Balamurugan, K.

    2016-11-01

    The present work aims to investigate the structural, optical, photocatalyst and antibacterial properties of bare and cobalt doped ZnO nanoparticles (NPs) with different concentrations Zn1-x Co x O (x = 0, 0.03, 0.06 and 0.09) synthesized by co-precipitation method. The XRD patterns confirmed that all samples of cobalt doped ZnO nanostructures revealed the formation of single phase having hexagonal wurtzite structure with crystallite size in the range of 31-41 nm. Further, the decreasing trend in lattice parameters and grain sizes were also seen with increasing doping concentrations which confirms the incorporation of Co ions into the ZnO lattice. This result was further supported by the FT-IR data. HR-TEM images demonstrated the distinct hexagonal like morphology with small agglomeration. The UV-visible absorption spectra exhibits red shift with increase in Co doping concentration in ZnO while corresponding bandgap energy of cobalt doped ZnO NPs decreased with increased Co doping concentration. PL spectra showed a weak UV and visible emission band which may be ascribed to the reduction in oxygen vacancy and defects by cobalt doping. XPS and EDX spectral results confirm the composition and the purity of Co doped ZnO NPs. Furthermore, the Co doped ZnO NPs were found to exhibit lesser photocatalytic activity for the degradation of methyl green dye under UV light illumination in comparison with the bare ZnO NPs. Moreover, anti-bacterial studies reveals that the Co doped ZnO NPs possess more antibacterial effect against gram positive Basillus subtills and gram negative Klebsiella pneumoniae bacterial strains than the bare ZnO NPs.

  1. Rapid synthesis of Co, Ni co-doped ZnO nanoparticles: Optical and electrochemical properties

    NASA Astrophysics Data System (ADS)

    Romeiro, Fernanda C.; Marinho, Juliane Z.; Lemos, Samantha C. S.; de Moura, Ana P.; Freire, Poliana G.; da Silva, Luis F.; Longo, Elson; Munoz, Rodrigo A. A.; Lima, Renata C.

    2015-10-01

    We report for the first time a rapid preparation of Zn1-2xCoxNixO nanoparticles via a versatile and environmentally friendly route, microwave-assisted hydrothermal (MAH) method. The Co, Ni co-doped ZnO nanoparticles present an effect on photoluminescence and electrochemical properties, exhibiting excellent electrocatalytic performance compared to undoped ZnO sample. Photoluminescence spectroscopy measurements indicated the reduction of the green-orange-red visible emission region after adding Co and Ni ions, revealing the formation of alternative pathways for the generated recombination. The presence of these metallic ions into ZnO creates different defects, contributing to a local structural disorder, as revealed by Raman spectra. Electrochemical experiments revealed that the electrocatalytic oxidation of dopamine on ZnO attached to multi-walled carbon nanotubes improved significantly in the Co, Ni co-doped ZnO samples when compared to pure ZnO.

  2. Electronic structure of Co-doped ZnO nanorods

    NASA Astrophysics Data System (ADS)

    Neffati, Ahmed; Souissi, Hajer; Kammoun, Souha

    2012-10-01

    The optical transmission spectra, the photoluminescence (PL), and the photoluminescence excitation (PLE) spectra of the cobalt doped zinc oxide nanorods Zn1-xCoxO (x = 0.01, 0.10) were measured by Loan et al. [J. Phys. D: Appl. Phys. 42, 065412 (2009)] in the region 1.5-4 eV. These spectra exhibit a group of ultraviolet narrow lines in the region of 3.0-3.4 eV related to the near-band-edge emission of the host ZnO materials and a group of emission lines in the red region of 1.8-1.9 eV assigned to the radiative transitions within the tetrahedral Co2+ ions in the ZnO host crystal. The group of lines in the visible region provides important information about the electronic structure of the cobalt doped zinc oxide nanorods. This work investigates a theoretical crystal-field analysis of the visible lines associated to the Co2+ ion transition occupying a Td site symmetry in ZnO host crystal. A satisfactory correlations were obtained between experimental and calculated energy levels. The electronic structure was compared with the reported for cobalt transition ion doped in ZnO nanoparticles and bulk crystals [Volbers et al., Appl. Phys. A 88, 153 (2007) and H. J. Schulz and M. Thiede, Phys. Rev. B 35, 18 (1987)]. In order to explain the existence of excitation peaks observed near the band edge of the ZnO host, an energy transfer mechanism is proposed.

  3. Characterization of co-doped (In, N): ZnO by indigenous thermopower measurement system

    NASA Astrophysics Data System (ADS)

    Kedia, Sanjay Kumar; Singh, Anil; Chaudhary, Sujeet

    2016-05-01

    The thermopower measurement of (In, N) co-doped ZnO thin films have been carried out using indigenous high and low temperature thermopower measurement system. The compact thermopower measurement system has been designed, developed, tested in house. The sensitivity and accuracy of indigenous thermopower system have been investigated by measuring thermopower of standard samples like Cu, Ni, Sb etc. It has been also investigated by the comparison of carrier concentration using Hall Effect and Thermopower measurement of these (In, N) co-doped ZnO thin films. The constant temperature gradient between hot and cold junction has been maintained by using the temperature controller. The room temperature and low temperature Seebeck coefficient measurements were performed on these co-doped ZnO samples. A series of experiments have been performed to detect the p-type conductivity in co-doped ZnO thin films, particularly at low temperature. The negative Seebeck coefficient observed down to 40 K established the n-type behavior in these co-doped samples.

  4. Reversible ferromagnetic spin ordering governed by hydrogen in Co-doped ZnO semiconductor

    SciTech Connect

    Cho, Yong Chan; Kim, Sung-Jin; Lee, Seunghun; Kim, Su Jae; Cho, Chae Ryong; Nahm, Ho-Hyun; Park, Chul Hong; Jeong, Il Kyoung; Park, Sungkyun; Hong, Tae Eun; Kuroda, Shinji; Jeong, Se-Young

    2009-10-26

    We report a reversible manipulation of short-range spin ordering in Co-doped ZnO through hydrogenation and dehydrogenation processes. In both magnetic-circular dichroism and superconducting quantum interference device measurements, the ferromagnetism was clearly induced and removed by the injection and ejection of hydrogen, respectively. The x-ray photoelectron spectroscopy results and the first-principles electronic structure calculations consistently support the dependence of the ferromagnetism on the hydrogen position and the contribution of transition metal ions. The results suggest the ferromagnetic interaction between Co ions can be reversibly controlled by the hydrogen-mediated intrinsic spin ordering in Co doped ZnO.

  5. Rapid synthesis of Co, Ni co-doped ZnO nanoparticles: Optical and electrochemical properties

    SciTech Connect

    Romeiro, Fernanda C.; Marinho, Juliane Z.; Lemos, Samantha C.S.; Moura, Ana P. de; Freire, Poliana G.; Silva, Luis F. da; Longo, Elson; Munoz, Rodrigo A.A.; Lima, Renata C.

    2015-10-15

    We report for the first time a rapid preparation of Zn{sub 1−2x}Co{sub x}Ni{sub x}O nanoparticles via a versatile and environmentally friendly route, microwave-assisted hydrothermal (MAH) method. The Co, Ni co-doped ZnO nanoparticles present an effect on photoluminescence and electrochemical properties, exhibiting excellent electrocatalytic performance compared to undoped ZnO sample. Photoluminescence spectroscopy measurements indicated the reduction of the green–orange–red visible emission region after adding Co and Ni ions, revealing the formation of alternative pathways for the generated recombination. The presence of these metallic ions into ZnO creates different defects, contributing to a local structural disorder, as revealed by Raman spectra. Electrochemical experiments revealed that the electrocatalytic oxidation of dopamine on ZnO attached to multi-walled carbon nanotubes improved significantly in the Co, Ni co-doped ZnO samples when compared to pure ZnO. - Graphical abstract: Rapid synthesis of Co, Ni co-doped ZnO nanoparticles: optical and electrochemical properties. Co, Ni co-doped ZnO hexagonal nanoparticles with optical and electrocatalytic properties were successfully prepared for the first time using a microwave hydrothermal method at mild conditions. - Highlights: • Co{sup 2+} and Ni{sup 2+} into ZnO lattice obtained a mild and environmentally friendly process. • The heating method strongly influences in the growth and shape of the particles. • Short-range defects generated by the ions insertion affects the photoluminescence. • Doped ZnO nanoparticles improve the electrocatalytic properties of pure oxide.

  6. Photoluminescence, ellipsometric, optical and morphological studies of sprayed Co-doped ZnO films

    NASA Astrophysics Data System (ADS)

    Gençyılmaz, O.; Atay, F.; Akyüz, I.

    2016-06-01

    In this study, undoped and cobalt (Co)-doped zinc oxide (ZnO) films were successfully produced by ultrasonic spray pyrolysis (USP) technique at low temperature (350°C). The optical and surface properties were investigated as a function of Co content. The optical parameters (thickness, refractive index and extinction coefficient) were determined using spectroscopic ellipsometry (SE) and it was seen that the refractive index and extinction coefficient values of Co-doped ZnO films decreased slightly depending on the increasing of Co doping. For investigation, the transmittance and photoluminescence (PL) spectra of the films, UV-Vis spectrophotometer and PL spectroscopy were used at room temperature. The transmittance spectra show that transmittance values decreased and Co+2 ions substitute Zn+2 ions of ZnO lattice. The optical band gap values decreased from 3.26 eV to 2.85 eV with the changing of Co content. The results of PL spectra exhibit the position of the different emission peaks unchanged but the intensity of peaks increased with increasing Co doping. Also, the surface properties of the films were obtained by atomic force microscopy (AFM) and these results indicated that the surface morphology and roughness values were prominently changed with Co doping.

  7. Enhanced photocatalytic activity of Co doped ZnO nanodisks and nanorods prepared by a facile wet chemical method.

    PubMed

    Kuriakose, Sini; Satpati, Biswarup; Mohapatra, Satyabrata

    2014-07-07

    Cobalt doped ZnO nanodisks and nanorods were synthesized by a facile wet chemical method and well characterized by X-ray diffraction, field emission scanning electron microscopy (FESEM), high resolution transmission electron microscopy (HRTEM) with energy dispersive X-ray spectroscopy, photoluminescence spectroscopy, Raman spectroscopy and UV-visible absorption spectroscopy. The photocatalytic activities were evaluated for sunlight driven degradation of an aqueous methylene blue (MB) solution. The results showed that Co doped ZnO nanodisks and nanorods exhibit highly enhanced photocatalytic activity, as compared to pure ZnO nanodisks and nanorods. The enhanced photocatalytic activities of Co doped ZnO nanostructures were attributed to the combined effects of enhanced surface area of ZnO nanodisks and improved charge separation efficiency due to optimal Co doping which inhibit recombination of photogenerated charge carriers. The possible mechanism for the enhanced photocatalytic activity of Co doped ZnO nanostructures is tentatively proposed.

  8. Luminescence Properties of Sm3+/Eu3+ Co-Doped ZnO Quantum Dots.

    PubMed

    Liu, Fengyi; Li, Hong; Hu, Yajing; Na, Jin; Mou, Yun; Yang, Kun; Ye, Zuhu; Li, Mingyue; Xie, Ya-Hong

    2016-04-01

    In order to improve luminescence properties of semiconductor ZnO quantum dots (QDs), Sm3+/Eu3+ co-doped ZnO QDs have been controllably synthesized by sol-gel method in this paper. ZnO QDs have a spherical shape with mean diameter at about 5-6 nm, which was characterized by high-resolution transmission electron microscopy (HRTEM). ZnO QDs have hexagonal wurtzite structure with parts of Sm3+ and Eu3+ incorporated into the lattice, which was demonstrated by X-ray Diffraction (XRD). Luminescence properties at room temperature (RT) of different amount of Sm3+ and 2 mol% Eu3+ doped ZnO QDs were examined in-depth by optical spectra. In contrast to the Pr3+/Eu3+ co-doped fluorescent performance researched in our previous study, the photoluminescence (PL) spectra indicates the unique luminescence properties of Sm3+/Eu3+ co-doped ZnO QDs. In addition, fluorescence lifetimes were obtained to illustrate the luminous mechanism.

  9. Synthesis, structural and optical characterization of undoped, N-doped ZnO and co-doped ZnO thin films

    SciTech Connect

    Pathak, Trilok Kumar Kumar, R.; Purohit, L. P.

    2015-05-15

    ZnO, N-doped ZnO and Al-N co-doped ZnO thin films were deposited on ITO coated corning glass by spin coater using sol-gel method. The films were annealed in air at 450°C for one hour. The crystallographic structure and morphology of the films were studied by X-ray diffraction (XRD) and scanning electron microscopy (SEM) respectively. The X-ray diffraction results confirm that the thin films are of wurtzite hexagonal with a very small distortion. The optical properties were investigated by transmission spectra of different films using spectrophotometer (Shimadzu UV-VIS-NIR 3600). The results indicate that the N doped ZnO thin films have obviously enhanced transmittance in visible region. Moreover, the thickness of the films has strong influences on the optical constants.

  10. Observation of low field microwave absorption in co-doped ZnO system

    NASA Astrophysics Data System (ADS)

    Mahule, Tebogo S.; Srinivasu, Vijaya V.; Das, Jayashree

    2016-10-01

    Room temperature low field microwave absorption (LFMA) in magnetic materials find application in microwave absorbers and low field sensors. However not all the magnetic materials show LFMA and the phenomenon is not fully understood. We report on the observation of low field microwave absorption (LFMA) or the non-resonant microwave absorption (NRMA) in the transition metal (TM) co-doped ZnO samples of the composition Zn1-x(TM:TM)xO synthesized by solid state reaction technique. LFMA peaks and hysteresis matches very well with that of the magnetization hysteresis loop and the anisotropy fields at room temperature similar to the reports in the literature for other magnetic systems. However we show through our careful experiments that such a correlation between LFMA and the magnetization does not survive at low temperatures and particularly at 10 K the LFMA hysteresis collapses in our TM co-doped ZnO system; whereas the magnetization hysteresis loop becomes very big and anisotropy field becomes bigger in the range of kOe. We interpret the LFMA as field dependent surface impedance or eddy current losses, in terms of a possible role of anomalous hall resistivity that follows magnetization and the ordinary hall resistivity that only follows the applied field. We then argue that LFMA accordingly follows magnetization or applied field when AHE or OHE dominates respectively. Also we confirm the absence of LFMA signals in the rare earth co-doped ZnO system.

  11. The role of unintentional hydrogen on magnetic properties of Co doped ZnO

    NASA Astrophysics Data System (ADS)

    Assadi, M. H. N.; Zhang, Y. B.; Li, S.

    2011-12-01

    The correlation between the positioning of hydrogen and magnetic properties of Co doped ZnO are investigated using ab initio methodology. It is found that hydrogen can both sit in interstitial Zn-O mid bonds and substitute oxygen forming multicentre bonds with zinc. However the substitutional hydrogen is slightly more stable by 0.37 eV than the interstitial hydrogen. It is also found that mobile hydrogen ions in ZnO are trapped by Co ions or Co complexes to form variety of highly stable Co-H complexes in ZnO host lattice. Charge transfer from hydrogen to neighboring Co's 3d orbitals leads to both the stabilization of ferromagnetic ordering among Co ions and the reduction of Co ion magnetic moment.

  12. EPR investigation of pure and Co-doped ZnO oriented nanocrystals

    NASA Astrophysics Data System (ADS)

    Savoyant, A.; Alnoor, H.; Bertaina, S.; Nur, O.; Willander, M.

    2017-01-01

    Pure and cobalt-doped zinc oxide aligned nanorods have been grown by the low-temperature (90 °C) aqueous chemical method on amorphous ZnO seed layer, deposited on a sapphire substrate. High crystallinity of these objects is demonstrated by the electron paramagnetic resonance investigation at liquid helium temperature. The successful incorporation of Co2+ ions in substitution of Zn2+ ones in the ZnO matrix has also been confirmed. A drastic reduction of intrinsic ZnO nanorods core defects is observed in the Co-doped samples, which enhances the structural quality of the NRs. The quantification of substitutional Co2+ ions in the ZnO matrix is achieved by comparison with a reference sample. The findings in this study indicate the potential of using the low-temperature aqueous chemical approach for synthesizing material for spintronics applications.

  13. First-principles study on the electronic and optical properties of Si and Al co-doped zinc oxide for solar cell devices

    NASA Astrophysics Data System (ADS)

    Abbassi, A.; El Amrani, A.; Ez-Zahraouy, H.; Benyoussef, A.; El Amraoui, Y.

    2016-06-01

    Electronic and optical properties of co-doped zinc oxide ZnO with silicon (Si) and aluminum (Al), in Zn1-2 x Si x Al x O (0 ≤ x ≤ 0.0625) original structure forms, are investigated by the first-principles calculations based on the density functional theory (DFT). The optical constants and dielectric functions are investigated with the full-potential linearized augmented plane wave (FP-LAPW) method and the generalized gradient approximation (GGA) by WIEN2k package. The complex dielectric functions, refractive index and band gap of the pure as well as doped and co-doped ZnO were investigated, which are in good agreement with the available experimental results for the undoped ZnO. Thus, the maximum optical transmittance of the co-doped ZnO of about 95 % was achieved; it is higher than that of pure ZnO. Thus, we showed for the Si-Al co-doped ZnO with x = 0.0315 that the optical transmittance can cover a larger range in the visible light region. In addition, an occurrence of important energy levels around Fermi levels was showed, which is mainly due to doping atoms that lead to an overlap between valence and conduction bands, and consequently to the significant conductor behavior of the Si-Al co-doped ZnO. The original Zn1-2 x Si x Al x O structure reveals promising optical and electronic properties, and it can be investigated as good candidates for practical uses as transparent and conducting electrodes in solar cell devices.

  14. Resistive switching: An investigation of the bipolar–unipolar transition in Co-doped ZnO thin films

    SciTech Connect

    Santos, Daniel A.A.; Zeng, Hao; Macêdo, Marcelo A.

    2015-06-15

    Highlights: • A purely bipolar behavior on a Co-doped ZnO thin film has been demonstrated. • We have shown what can happen if a unipolar test is performed in a purely bipolar device. • An explanation for how a sample can show a purely bipolar switching behavior was suggested. • An important open issue about resistive switching effect was put in debate. - Abstract: In order to investigate the resistive switching effect we built devices in a planar structure in which two Al contacts were deposited on the top of the film and separated by a small gap using a shadow mask. Therefore, two samples of 10% Co-doped ZnO thin films were sputtered on glass substrate. High resolution X-ray diffraction (HRXRD) revealed a highly c-axis oriented crystalline structure, without secondary phase. The high resolution scanning electron microscopy (HRSEM) showed a flat surface with good coverage and thickness about 300 nm. A Keithley 2425 semiconductor characterization system was used to perform the resistive switching tests in the bipolar and unipolar modes. Considering only the effect of compliance current (CC), the devices showed a purely bipolar behavior since an increase in CC did not induce a transition to unipolar behavior.

  15. Impacts of Co doping on ZnO transparent switching memory device characteristics

    NASA Astrophysics Data System (ADS)

    Simanjuntak, Firman Mangasa; Prasad, Om Kumar; Panda, Debashis; Lin, Chun-An; Tsai, Tsung-Ling; Wei, Kung-Hwa; Tseng, Tseung-Yuen

    2016-05-01

    The resistive switching characteristics of indium tin oxide (ITO)/Zn1-xCoxO/ITO transparent resistive memory devices were investigated. An appropriate amount of cobalt dopant in ZnO resistive layer demonstrated sufficient memory window and switching stability. In contrast, pure ZnO devices demonstrated a poor memory window, and using an excessive dopant concentration led to switching instability. To achieve suitable memory performance, relying only on controlling defect concentrations is insufficient; the grain growth orientation of the resistive layer must also be considered. Stable endurance with an ON/OFF ratio of more than one order of magnitude during 5000 cycles confirmed that the Co-doped ZnO device is a suitable candidate for resistive random access memory application. Additionally, fully transparent devices with a high transmittance of up to 90% at wavelength of 550 nm have been fabricated.

  16. Preparation and characterization of Mn and (Mn, Cu) co-doped ZnO nanostructures.

    PubMed

    Wang, H B; Wang, H; Zhang, C; Yang, F J; Duan, J X; Yang, C P; Gu, H S; Zhou, M J; Li, Q; Jiang, Y

    2009-05-01

    We report on the ferromagnetic characteristics of Zn(1-x)Mn(x)O nanorods synthesized by a seed-mediated solution method. The as-doped ZnO nanorods had a length about 200 nm and a diameter ranging from 20 to 30 nm. Magnetic property measurements revealed that the Zn(1-x)Mn(x)O nanorods exhibited weak ferromagnetism at 305 K. Similar solution method were also employed to fabricate the (Mn, Cu) co-doped nanostructures. The presence of Cu2+ was found to change the nanorod morphology (in the case of pure ZnO) to nanoparticle. On the other hand, not only the hysteresis curve saturated at lower magnetic field, but also the saturation magnetization was increased with the Cu doping. Transmission electron microscopy, X-ray photoelectron spectroscopy and Photoluminescence analysis suggested that the room temperature (RT) ferromagnetism could be originated from the Mn2+ doped into the ZnO lattice, and additional carriers due to the Cu co-doping may enhance the room temperature ferromagnetism in the Mn:ZnO system.

  17. Color tunable ZnO nanorods by Eu and Tb co-doping for optoelectronic applications

    NASA Astrophysics Data System (ADS)

    Pal, Partha P.; Manam, J.

    2014-07-01

    Eu/Tb co-doped ZnO nanorods were prepared by co-precipitation method and the effect of Eu-Tb co-doping was studied by X-ray diffraction (XRD), transmission electron microscopy (TEM), high resolution transmission electron microscopy, Fourier transform infrared spectroscopy (FTIR), UV-Vis-NIR diffuse reflectance (DR) and photoluminescence (PL) spectroscopy. The XRD pattern shows typical peak pattern for pure hexagonal wurtzite structure to match with the JCPDS data. The samples are found to be consisting of nanorods of diameter 20-30 nm as revealed by the TEM image. The FTIR pattern confirms the formation of the compounds. The DR study was carried to show the variation of absorption edge and the variation in band gap values, which showed the crystal size effect in the co-doped sample of different rare-earth ratios. The room temperature PL study shows bright emission spectra for the samples with different rare-earth ratios. It shows a very good energy transfer from Tb to Eu ions. The energy transfer mechanism and color tunability were discussed thoroughly.

  18. Fabrication and photoelectric properties of Er3+ and Yb3+ co-doped ZnO films

    NASA Astrophysics Data System (ADS)

    Feng, Wei; Wang, Xiangfu; Meng, Lan; Yan, Xiaohong

    2016-01-01

    In this paper, the Er3+ and Yb3+ co-doped ZnO films deposited by a novel thermal decomposition method under different annealing temperature process have been reported. The effects of annealing temperature on the morphology and properties of the films are systematically studied. The resulting spectra demonstrate that the Er3+ and Yb3+ co-doped ZnO films possessed the property of up-conversion, converting IR light into visible light that can be absorbed by amorphous silicon solar cell. After all, inner photoelectric effect of the Er3+ and Yb3+ co-doped ZnO films in the amorphous as a light scattering layer are also found with an infrared 980 nm laser as excitation source.

  19. Extrinsic origin of room-temperature ferromagnetism in Co-doped ZnO annealed in Zn vapor

    NASA Astrophysics Data System (ADS)

    Yan, Guoqing; Xuan, Haicheng

    2011-08-01

    Co-doped ZnO and CoO were prepared at 950 °C by the solid-state reaction method, then were annealed in N2 flow at 950 °C, and finally annealed in Zn vapor at 600 °C or 800 °C. The samples before annealing in Zn vapor have no ferromagnetism, but after annealing in Zn vapor, Co-doped ZnO and CoO both exhibit room-temperature ferromagnetism. Through x-ray diffraction and element composition measurements, it was found that the ferromagnetism of Co-doped ZnO annealed in Zn vapor is extrinsic and comes from cubic Co5Zn21 and/or cubic CoZn.

  20. Enhanced photocatalytic properties of quantum-sized ZnO induced by La3+-Nd3+ co-doping

    NASA Astrophysics Data System (ADS)

    Lu, S. X.; Zhu, T.; Xu, W. G.

    2009-09-01

    Nanoparticles of ZnO doped with La3+, Nd3+, co-doped with La3+ and Nd3+ were prepared using the sol-gel method. The samples were characterized by means of X-ray diffraction (XRD), UV-Vis spectroscopy (UV). The photocatalytic reactivities were evaluated by photodegradation of unsymmetrical dimethylhydrazine solution. Nanocrystalline ZnO co-doped with La3+ and Nd3+ at optimal concentration (2 at.% La3+ and 1.5 at.% Nd3+) shows a better synergistic effect, which significantly increases the photodegradation activity of nano-ZnO. The factors influencing photoreactivity of co-doped nanocrystalline ZnO have been discussed.

  1. High temperature ferromagnetism and optical properties of Co doped ZnO nanoparticles

    NASA Astrophysics Data System (ADS)

    Pal, Bappaditya; Giri, P. K.

    2010-10-01

    We report on the occurrence of high temperature ferromagnetism (FM) in ZnO nanoparticles (NPs) doped with Co-atoms. ZnO NPs of two different initial sizes are doped with 3% and 5% Co using ball milling and FM is studied at room temperature and above. X-ray diffraction and high-resolution transmission electron microscopy analysis confirm the absence of metallic Co clusters or any other phase different from würtzite-type ZnO. UV-visible absorption studies show change in band structure and photoluminescence studies show green emission band at 520 nm indicating incorporation of Co-atoms and presence of oxygen vacancy defects, respectively in ZnO lattice. Micro-Raman studies of doped samples shows defect related additional bands at 547 and 574 cm-1. XRD and Raman spectra provide clear evidence for strain in the doped ZnO NPs. The field dependence of magnetization (M-H curve) measured at room temperature exhibits the clear FM with saturation magnetization (Ms) and coercive field (Hc) of the order of 3-7 emu/g and 260 Oe, respectively. Temperature dependence of magnetization (M-T) measurement shows sharp ferromagnetic to paramagnetic transition with a high Curie temperature (Tc) of ˜800 K for 3% Co doped ZnO NPs. It is found that doping at 5% and higher concentration does not exhibit a proper magnetic transition. We attempt to fit the observed FM data with the bound magnetic polaron (BMP) model involving localized carriers and magnetic cations. However, calculated concentration of the BMPs is well below the typical percolation threshold in ZnO. We believe that observed high temperature FM is primarily mediated by defects in the strained NPs. ZnO NPs of lower initial size show enhanced FM that may be attributed to size dependent doping effect.

  2. Temperature dependence anomalous dielectric relaxation in Co doped ZnO nanoparticles

    SciTech Connect

    Ansari, Sajid Ali; Nisar, Ambreen; Fatma, Bushara; Khan, Wasi; Chaman, M.; Azam, Ameer; Naqvi, A.H.

    2012-12-15

    Graphical abstract: Display Omitted Highlights: ► We prepared Co doped ZnO by facile gel-combustion method. ► Studied temperature dependent dielectric properties in detail. ► Relaxation time shifts toward the higher temperature as increase in Co content. ► SEM analysis shows formation and agglomeration of nanoparticles. ► Dielectric constants, loss and ac conductivity increases with rise in temperature. ► The dielectric constant, loss and ac conductivity decreases as Co ion increases. -- Abstract: We have reported temperature and frequency dependence of dielectric behavior of nanocrystalline Zn{sub 1−x}Co{sub x}O (x = 0.0, 0.01, 0.05 and 0.1) samples prepared by gel-combustion method. The synthesized samples were examined by X-ray diffraction (XRD), scanning electron microscopy (SEM) and LCR-meter, respectively. The XRD analysis reveals that ZnO has a hexagonal (wurtzite) crystal structure. The morphology and size of the nanoparticles (∼10–25 nm) were observed by SEM for 5% Co doped ZnO sample. In dielectric properties, complex permittivity (ε{sup *} = ε′ − jε″), loss tangent (tan δ) and ac conductivity (σ{sub ac}) in the frequency range 75 kHz to 5 MHz were analyzed with temperature range 150–400 °C. The experimental results indicate that ε′, ε″, tan δ and σ{sub ac} decreases with increase in frequency and temperature. The transition temperature as obtained in dispersion curve of dielectric constant shifts toward higher temperature with increase Co content.

  3. Self-consistent GW calculation of the electronic structure of co-doped ZnO

    NASA Astrophysics Data System (ADS)

    Kim, Maengsuk; Park, Chul Hong

    2012-01-01

    The electronic structure of Co-doped ZnO is presented using a first-principles self-consistent GW calculation based on the screened hybrid HSE06 functional and is compared to the structure calculated using the generalized gradient density approximation plus U (GGA+U) method. The obtained energy splittings between unoccupied Co t 2 and the occupied Co e states are about 3.0 eV and 5.1 eV for the GGA+U and the HSE06 calculations, respectively. Through a correction of the self-consistent GW calculations on the top of HSE06, the electronic energy levels of the occupied Co e band states are moved downward slightly while those at the unoccupied Co t 2 bands are shifted upward, and the occupied Co e and the empty Co t 2 levels of the minority spin are located, respectively, far below and far above the conduction band minimum.

  4. Local fields in Co and Mn Co-doped ZnO

    NASA Astrophysics Data System (ADS)

    Sato, W.; Kano, Y.; Suzuki, T.; Nakagawa, M.; Kobayashi, Y.

    2016-12-01

    The magnetic properties of ZnO co-doped with 5 at. % Co and 5 at. % Mn(Zn0.90Co0.05Mn0.05O) synthesized by a solid-state reaction were investigated by means of 57Co emission Mössbauer spectroscopy. The majority of the probe ions (80 %) residing in defect-free substitutional Zn sites take the oxidation state of 57Fe 2+, and the others presumably form local defects taking the state of 57Fe 3+ at room temperature. Both components show doublets, and RT ferromagnetism was thus absent in the sample. For the measurement at 10 K, spectral broadening was observed, implying a possible presence of a weak magnetic component.

  5. Effects on the optical properties and conductivity of Ag-N co-doped ZnO

    NASA Astrophysics Data System (ADS)

    Xu, Zhenchao; Hou, Qingyu; Qu, Lingfeng

    2017-01-01

    Nowadays, the studies of the effects on the optical bandgap, absorption spectrum, and electrical properties of Ag-N co-doped ZnO have been extensively investigated. However, Ag and N atoms in doped systems are randomly doped, and the asymmetric structure of ZnO is yet to be explored. In this paper, the geometric structure, stability, density of states, absorption spectra and conductivity of pure and Ag-N co-doped Zn1‑xAgxO1‑xNx(x=0.03125, 0.0417 and 0.0625) in different orientations are calculated by using plane-wave ultrasoft pseudopotential on the basis of density functional theory with GGA+U method. Results show that the volume, equivalent total energy and formation energy of the doped system increase as the concentration of Ag-N co-doped Zn1‑xAgxO1‑xNx increases at the same doping mode. The doped systems also become unstable, and difficulty in doping. At the same concentration of Ag-N co-doped Zn1‑xAgxO1‑xNx, the systems with Ag-N along the c-axis orientation is unstable, and doping is difficult. The optical bandgap of Ag-N co-doped systems is narrower than that of the pure ZnO. At the same doping mode, the optical bandgap of the systems with Ag-N perpendicular to the c-axis orientation becomes narrow as the concentration of Ag-N co-doped Zn1‑xAgxO1‑xNx increases. The absorption spectra of the doped systems exhibit a red shift, and this red shift becomes increasingly significant as the concentration of Ag-N co-doped Zn1‑xAgxO1‑xNx increases. Under the same condition, the relative hole concentrations of the doped systems increases, the hole effective mass in valence band maximum decreases, the hole mobility decreases, the ionization energy decreases, Bohr radius increases, the conductance increases and the conductivity become better. Our results may be used as a basis for the designing and preparation of new optical and electrical materials for Ag-N co-doped ZnO applied in low temperature end of temperature difference battery.

  6. Synthesis, structural and optical properties of pure ZnO and Co doped ZnO nanoparticles prepared by the co-precipitation method

    NASA Astrophysics Data System (ADS)

    Devi, P. Geetha; Velu, A. Sakthi

    2016-09-01

    Pure ZnO and Cobalt (Co) doped ZnO nanoparticles (NPs) were synthesized by the co-precipitation method. The synthesized nanoparticles retained the wurtzite hexagonal structure, which was confirmed by X-ray diffraction studies. From FESEM studies, ZnO and Co doped ZnO NPs showed Spherical and nanorod mixed phase and Spherical like morphology, respectively. The amount of dopant (Co2+) incorporated into ZnO sample was determined by EDAX. The FT-IR spectra confirmed the Zn-O stretching bands at 438 and 427 cm-1 for ZnO and Co doped ZnO NPs. From the UV-VIS spectroscopic measurements, the excitonic pecks were found around 376 and 370 nm for the respective samples. The photoluminescence measurements revealed that the broad emission was composed of seven different bands due to zinc vacancies, oxygen vacancies and surface defects. The dynamic light scattering (DLS) and Zeta potential measurements were used to find out the size and surface charges.

  7. Coalescence-driven magnetic order of the uncompensated antiferromagnetic Co doped ZnO

    NASA Astrophysics Data System (ADS)

    Ney, V.; Henne, B.; Lumetzberger, J.; Wilhelm, F.; Ollefs, K.; Rogalev, A.; Kovacs, A.; Kieschnick, M.; Ney, A.

    2016-12-01

    The evolution of the structural and magnetic properties of Co doped ZnO has been investigated over an unprecedented concentration range above the coalescence limit. ZnO films with Co concentrations from 20% to 60% of the cationic lattice have been grown by reactive magnetron sputtering. The wurtzite crystal structure was maintained even for these high dopant concentrations. By measuring the x-ray absorption at the near edge and the linear and circular dichroism of the films at the Zn and Co K edge, it could be shown that Co substitutes predominantly for Zn in the lattice. No indications of metallic Co have been found in the samples. At low Co concentrations, the films are paramagnetic, but with increasing Co content, the films become antiferromagnetically ordered with increasing order temperature. Uncompensated spins, coupled to the antiferromagnetic dopant configurations, lead to a vertical exchange-bias-like effect, which increases with increasing Co concentration. In parallel, the single-ion anisotropy is gradually lost.

  8. Physical structure and optical properties of Co-doped ZnO nanoparticles prepared by co-precipitation

    NASA Astrophysics Data System (ADS)

    He, Rongliang; Tang, Bin; Ton-That, Cuong; Phillips, Matthew; Tsuzuki, Takuya

    2013-11-01

    The structural and optical properties of cobalt-doped zinc oxide (Co-doped ZnO) nanoparticles have been investigated. The nanopowder with Co concentrations up to 5 at% was synthesized by a co-precipitation method. The physical structure and the chemical states of the Co-doped ZnO were characterized by X-ray diffraction, X-ray photoelectron spectroscopy, UV-Visible reflectance and cathodoluminescence (CL) spectroscopy. The results show that cobalt ions predominantly occupy Zn2+ sites in the wurtzite crystal lattice and possess a valence state of 2+. CL analysis revealed that the incorporation of Co2+ creates a new emission band at 1.85 eV, but quenched the near-band-edge luminescence.

  9. Fabrication of non-enzymatic sensor using Co doped ZnO nanoparticles as a marker of H2O2

    NASA Astrophysics Data System (ADS)

    Khan, Sher Bahadar; Rahman, Mohammed M.; Asiri, Abdullah M.; Asif, Safi Asim Bin; Al-Qarni, Sara Abdullah S.; Al-Sehemi, Abdullah G.; Al-Sayari, Saleh A.; Al-Assiri, Mohammad Sultan

    2014-08-01

    Co doped ZnO nanoparticles were prepared by a simple thermal method and their functional relationships with H2O2 sensing were investigated. The sensing potential of Co doped ZnO nanoparticles were investigated using cyclic voltammeter. Co doped ZnO nanoparticles were characterized by FESEM, EDS, XRD, FTIR and XPS. The data obtained from the sensing study showed that Co doped ZnO nanoparticles are more sensitive toward H2O2. The results suggested that Co doped ZnO nanoparticles displayed tremendous electro-catalytic property for the reduction of H2O2. The performance of the sensor was further optimized using various pH and different scan rates. The developed sensor displayed high sensitivity (92.4444 μA mM-1 cm-2) and lower limit of detection (14.3 μM). Thus Co doped ZnO nanoparticles could be potential material for the construction of sensitive and efficient hydrogen peroxide sensor.

  10. Fabrication and characterization of a diluted magnetic semiconducting TM co-doped Al:ZnO (TM=Co, Ni) thin films by sol-gel spin coating method.

    PubMed

    Siddheswaran, R; Mangalaraja, R V; Tijerina, Eduardo P; Menchaca, J-Luis; Meléndrez, M F; Avila, Ricardo E; Jeyanthi, C Esther; Gomez, M E

    2013-04-01

    Effect of transition metal oxides (TM=Co and Ni) co-doping on the crystallinity, surface morphology, grain growth and magnetic properties of nanostructure Al:ZnO thin films has been studied for diluted magnetic semiconductor applications. Al:ZnO thin films were fabricated by sol-gel spin coating on p-type Si (100) substrates. Fabrication of hexagonal wurtzite TM co-doped Al:ZnO thin films having thickness 2μm was successfully achieved. The Raman spectra of the TM co-doped Al:ZnO thin films showed a broad vibrational mode in the range 520-540cm(-1) due to crystal defects created co-doping elements in the ZnO host lattice. Scanning electron microscopy (SEM) revealed that the films are composed of uniform size, polycrystalline dense ZnO particles with defect free, smooth surfaces. The surface roughness was further verified with atomic force microscopy (AFM). The energy dispersive X-ray spectroscopic analysis (EDX) confirmed the stoichiometric compositions of the TM co-doped Al:ZnO films. The magnetic measurements exhibited that the Co, Al:ZnO and Ni, Al:ZnO thin films were ferromagnetic at room temperature.

  11. Intense white light emission in Tm3+/Er3+/Yb3+ co-doped Y2O3-ZnO nano-composite

    NASA Astrophysics Data System (ADS)

    Yadav, R. S.; Verma, R. K.; Rai, S. B.

    2013-07-01

    The Tm3+/Er3+/Yb3+ co-doped Y2O3-ZnO nano-composite is synthesized using the solution combustion technique. The structural morphology is monitored using x-ray diffraction, transmission electron microscopy and scanning electron microscopy. The Yb3+/Tm3+ co-doped nano-phosphor emits intense blue as well as weak red emissions, while Yb3+/Er3+ co-doped nano-phosphor emits strong green along with red emissions on excitation with 976 nm laser. Joining these together (i.e. Tm3+/Er3+/Yb3+ co-doped phosphor) give very strong white light, which is further verified by CIE coordinates (0.32, 0.36). The addition of ZnO with Y2O3 phosphor gives further enhancement in the intensity of white light. The possible reason for this enhancement is the removal of optical quenching sites.

  12. Lanthanum and zirconium co-doped ZnO nanocomposites: synthesis, characterization and study of photocatalytic activity.

    PubMed

    Moafi, Hadi Fallah; Zanjanchi, Mohammad Ali; Shojaie, Abdollah Fallah

    2014-09-01

    Nanocomposits of zinc oxide co-doped with lanthanum and zirconium were prepared using the modified sol-gel method. The samples were characterized by X-ray diffraction (XRD), transmission electron microscopy (TEM), energy dispersive spectroscopy (EDS), diffuse reflectance spectroscopy (DRS), and BET surface area measurement. For comparison, the La and Zr mono doped ZnO have also been prepared under the same conditions. The XRD results revealed that all the materials showed a hexagonal wurtzite crystal structure. It was found that the particle size of La-Zr-doped ZnO is much smaller as compared to that of pure ZnO. The effect of operational parameters such as, doping concentration, catalyst loading, pH and initial concentration of methylene blue on the extent of degradation was investigated. The photocatalytic activity of the undoped ZnO, mono-doped and La-Zr-ZnO photocatalysts was evaluated by the photocatalytic degradation of methylene blue in aqueous solution. The presence of lanthanium and/or zirconium causes a red shift in the absorption band of ZnO. The results show that the photocatalytic activity of the La-Zr-ZnO photocatalyst is much higher than that of undoped and mono-doped ZnO, resulting from the La and Zr synergistic effect. The co-operation of the lanthanum and zirconium ion leads to the narrowing of the band gap and greatly improves the photocatalytic activity. The photocatalyst co-doped with lanthanum and zirconium 4 mol% shows the best photoactivity and photodecomposition efficiencies were improved by 92% under UV-Vis irradiation at the end of 30 min, compared with the pure and mono doped samples.

  13. A sensitive and label-free photoelectrochemical aptasensor using Co-doped ZnO diluted magnetic semiconductor nanoparticles.

    PubMed

    Li, Hongbo; Qiao, Yunfei; Li, Jing; Fang, Hailin; Fan, Dahe; Wang, Wei

    2016-03-15

    Co-doped ZnO diluted magnetic semiconductor as a novel photoelectric beacon was first constructed for photoelectrochemical (PEC) aptasensor of acetamiprid. The fabricated PEC sensing is based on the specific binding of acetamiprid and its aptamer, which induces the decreasement of enhanced photocurrent produced by the electron donor of quercetin. Co(2+) doping has a beneficial effect in extending the band width of light absorption of ZnO into the visible region and to promote the separation of the photoinduced carriers due to the sp-d exchange interactions existing between the band electrons and the localized d electrons of Co(2+). The fabricated aptasensor was linear with the concentration of acetamiprid in the range of 0.5-800 nmolL(-1) with the detection limit of 0.18 nmolL(-1). The presence of same concentration of other conventional pesticides did not interfere in the detection of acetamiprid and the recovery is between 96.2% and 103.7%. This novel PEC aptasensor has good performances with high sensitivity, good selectivity, low cost and portable features. The strategy of Co-doped ZnO diluted magnetic semiconductor paves a new way to improve the performances of PEC aptasensor.

  14. Structure and properties of Co-doped ZnO films prepared by thermal oxidization under a high magnetic field.

    PubMed

    Li, Guojian; Wang, Huimin; Wang, Qiang; Zhao, Yue; Wang, Zhen; Du, Jiaojiao; Ma, Yonghui

    2015-01-01

    The effect of a high magnetic field applied during oxidation on the structure, optical transmittance, resistivity, and magnetism of cobalt (Co)-doped zinc oxide (ZnO) thin films prepared by oxidizing evaporated Zn/Co bilayer thin films in open air was studied. The relationship between the structure and properties of films oxidized with and without an applied magnetic field was analyzed. The results show that the high magnetic field obviously changed the structure and properties of the Co-doped ZnO films. The Lorentz force of the high magnetic field suppressed the oxidation growth on nanowhiskers. As a result, ZnO nanowires were formed without a magnetic field, whereas polyhedral particles formed under a 6 T magnetic field. This morphology variation from dendrite to polyhedron caused the transmittance below 1,200 nm of the film oxidized under a magnetic field of 6 T to be much lower than that of the film oxidized without a magnetic field. X-ray photoemission spectroscopy indicated that the high magnetic field suppressed Co substitution in the ZnO lattice, increased the concentration of oxygen vacancies, and changed the chemical state of Co. The increased concentration of oxygen vacancies affected the temperature dependence of the resistivity of the film oxidized under a magnetic field of 6 T compared with that of the film oxidized without a magnetic field. The changes of oxygen vacancy concentration and Co state caused by the application of the high magnetic field also increase the ferromagnetism of the film at room temperature. All of these results indicate that a high magnetic field is an effective tool to modify the structure and properties of ZnO thin films.

  15. Visible upconversion in Er3+/Yb3+ co-doped LaAlO3 phosphors

    NASA Astrophysics Data System (ADS)

    Singh, Vijay; Rai, V. K.; Singh, N.; Pathak, M. S.; Rathaiah, M.; Venkatramu, V.; Patel, Rahul V.; Singh, Pramod K.; Dhoble, S. J.

    2017-01-01

    The Er3+ doped and Er3+/Yb3+ co-doped LaAlO3 phosphors have been synthesized by the combustion method and characterized their structural, morphological, elemental, vibrational and optical properties. The optical absorption and upconversion properties of the synthesized phosphors have been studied. Upon co-doping Yb3+ ions into Er3+:LaAlO3, the blue, green and red upconversion emissions of Er3+ ions have been enhanced about 20, 54 and 22 times, under 978 nm laser excitation. The observed upconversion emissions could be due to excited state absorption in Er3+:LaAlO3, whereas energy transfer is dominant mechanism in Er3+/Yb3+:LaAlO3 phosphors. The tuning in the color emitted from the synthesized phosphors towards the green region has been found due to incorporation of the Yb3+ ions. With increase in the pump power, the color emitted from the co-doped phosphor is not tuned significantly, showing its applicability in making the green display devices.

  16. Highly piezoelectric co-doped AlN thin films for wideband FBAR applications.

    PubMed

    Yokoyama, Tsuyoshi; Iwazaki, Yoshiki; Onda, Yosuke; Nishihara, Tokihiro; Sasajima, Yuichi; Ueda, Masanori

    2015-06-01

    We report piezoelectric materials composed of charge-compensated co-doped (Mg, β)(x)Al(1-x)N (β = Zr or Hf) thin films. The effect of the dopant element into AlN on the crystal structure, and piezoelectric properties of co-doped AlN was determined on the basis of a first-principles calculation, and the theoretical piezoelectric properties were confirmed by experimentally depositing thin films of magnesium (Mg) and zirconium (Zr) co-doped AlN (Mg-Zr-doped AlN). The Mg-Zrdoped AlN thin films were prepared on Si (100) substrates by using a triple-radio-frequency magnetron reactive co-sputtering system. The crystal structures and piezoelectric coefficients (d33) were investigated as a function of the concentrations, which were measured by X-ray diffraction and a piezometer. The results show that the d33 of Mg-Zr-doped AlN at total Mg and Zr concentrations (both expressed as β) of 0.35 was 280% larger than that of pure AlN. The experimentally measured parameter of the crystal structure and d33 of Mg-Zr-doped AlN (plotted as functions of total Mg and Zr concentrations) were in very close agreement with the corresponding values obtained by the first-principle calculations. Thin film bulk acoustic wave resonators (FBAR) employing (Mg,Zr)0.13Al0.87N and (Mg, Hf)0.13 Al0.87N as a piezoelectric thin film were fabricated, and their resonant characteristics were evaluated. The measured electromechanical coupling coefficient increased from 7.1% for pure AlN to 8.5% for Mg-Zr-doped AlN and 10.0% for Mg- Hf-doped AlN. These results indicate that co-doped (Mg, β)(x)Al(1-x)N (β = Zr or Hf) films have potential as piezoelectric thin films for wideband RF applications.

  17. Twin grain boundary mediated ferromagnetic coupling in Co-doped ZnO: First-principles calculations

    NASA Astrophysics Data System (ADS)

    Wu, Jingjing; Tang, Xin; Pu, Chunying; Long, Fei; Tang, Biyu

    2017-01-01

    First principle calculation, based on density functional theory, is applied to study the electronic and magnetic properties of Co-doped ZnO ∑7 (12 3 ̅0) twin grain boundary. Co atoms substituting Zn at the threefold-coordination sites have the lowest formation energy, compared with other sites. More importantly, the configuration can result in the stable formation of ferromagnetic state (FM). Meanwhile, the strong Co-Co interaction is found to be responsible for the ferromagnetic state. Due to the structural character of the twin grain boundary, periodical defects can be offered, which favors the macroscopic FM ordering. The result also gives us a new thinking to understand the origin of FM in transition metal doped ZnO.

  18. Annealing in tellurium-nitrogen co-doped ZnO films: The roles of intrinsic zinc defects

    SciTech Connect

    Tang, Kun Gu, Ran; Gu, Shulin Ye, Jiandong; Zhu, Shunming; Yao, Zhengrong; Xu, Zhonghua; Zheng, Youdou

    2015-04-07

    In this article, the authors have conducted an extensive investigation on the roles of intrinsic zinc defects by annealing of a batch of Te-N co-doped ZnO films. The formation and annihilation of Zn interstitial (Zn{sub i}) clusters have been found in samples with different annealing temperatures. Electrical and Raman measurements have shown that the Zn{sub i} clusters are a significant compensation source to holes, and the Te co-doping has a notable effect on suppressing the Zn{sub i} clusters. Meanwhile, shallow acceptors have been identified in photoluminescence spectra. The N{sub O}-Zn-Te complex, zinc vacancy (V{sub Zn})-N{sub O} complex, and V{sub Zn} clusters are thought to be the candidates as the shallow acceptors. The evolution of shallow acceptors upon annealing temperature have been also studied. The clustering of V{sub Zn} at high annealing temperature is proposed to be a possible candidate as a stable acceptor in ZnO.

  19. Studies on the structural and optical properties of zinc oxide nanobushes and Co-doped ZnO self-aggregated nanorods synthesized by simple thermal decomposition route

    SciTech Connect

    Freedsman, Joseph J.; Kennedy, L. John; Kumar, R. Thinesh; Sekaran, G.; Vijaya, J. Judith

    2010-10-15

    Pure and Co-doped zinc oxide nanomaterials were prepared by a simple low temperature synthesis and were characterized by X-ray diffraction (XRD), scanning electron microscopy (SEM), high resolution-transmission electron microscopy (HR-TEM), diffused reflectance spectroscopy (DRS) and electron paramagnetic resonance (EPR) techniques. The results showed the formation of nanobushes that consists of several nanowires for pure ZnO and the nanorods formed by self-aggregation for Co-doped ZnO. The presence of Co{sup 2+} ions replacing some of the Zn{sup 2+} in the ZnO lattice was confirmed by EPR and DRS studies. The mechanism for the formation of self-aggregated and self-aligned ZnO rods after the incorporation of cobalt in the lattice by the building block units is discussed in this study. Morphological studies were carried out using SEM and HR-TEM, which supports the validity of the proposed mechanism for the formation of ZnO nanobushes and Co-doped ZnO nanorods. The synthesized nanomaterials were found to have good optoelectronic properties.

  20. Characterization of undoped and Co doped ZnO nanoparticles synthesized by DC thermal plasma method

    NASA Astrophysics Data System (ADS)

    Nirmala, M.; Anukaliani, A.

    2011-02-01

    ZnO nanopowders doped with 5 and 10 at% cobalt were synthesized and their antibacterial activity was studied. Cobalt doped ZnO powders were prepared using dc thermal plasma method. Crystal structure and grain size of the particles were characterized by X-ray diffractometry and optical properties were studied using UV-vis spectroscopy. The particle size and morphology was observed by SEM and HRTEM, revealing rod like morphology. The antibacterial activity of undoped ZnO and cobalt doped ZnO nanoparticles against a Gram-negative bacterium Escherichia coli and a Gram-positive bacterium Bacillus atrophaeus was investigated. Undoped ZnO and cobalt doped ZnO exhibited antibacterial activity against both E. coli and Staphylococcus aureus but it was considerably more effective in the cobalt doped ZnO.

  1. Morphological evolution and electronic alteration of ZnO nanomaterials induced by Ni/Fe co-doping

    NASA Astrophysics Data System (ADS)

    Fletcher, Cameron; Jiang, Yijiao; Sun, Chenghua; Amal, Rose

    2014-06-01

    Zinc oxide (ZnO) nanocrystals mono- and co-doped with nickel/iron were prepared using a facile solvothermal procedure. A significant change in the surface morphology from nanorods to plate-like nanoparticles was observed with an increase in the dopant concentration. The variations of their optical and electronic properties induced by metal dopants were investigated using a combination of characterization techniques and ab initio calculations. It is found that both nickel and iron atoms have been successfully incorporated into the crystal lattice rather than forming a secondary phase, suggesting good dispersion of dopants within the ZnO matrix. Doping with iron has red-shifted the absorption edges of ZnO towards the visible portion resulting in lower band gap energies with increasing dopant concentration. Evidenced by Raman and EPR spectroscopy, the addition of iron has been shown to promote the formation of more oxygen vacancy and crystal defects within the host lattice as well as increasing the free-electron density of the nanomaterial. The DFT plus Hubbard model calculations confirm that low concentration Ni-doping does not induce band gap narrowing but results in localized states. The calculations show that Fe-doping has the potential to greatly improve the optical absorption characteristics and lead to structural deformation, corroborating the UV-Vis, Raman, and EPR spectra.Zinc oxide (ZnO) nanocrystals mono- and co-doped with nickel/iron were prepared using a facile solvothermal procedure. A significant change in the surface morphology from nanorods to plate-like nanoparticles was observed with an increase in the dopant concentration. The variations of their optical and electronic properties induced by metal dopants were investigated using a combination of characterization techniques and ab initio calculations. It is found that both nickel and iron atoms have been successfully incorporated into the crystal lattice rather than forming a secondary phase

  2. Photoluminescence of transparent glass-ceramics based on ZnO nanocrystals and co-doped with Eu3+, Yb3+ ions

    NASA Astrophysics Data System (ADS)

    Arzumanyan, Grigory M.; Kuznetsov, Evgeny A.; Zhilin, Aleksandr A.; Dymshits, Olga S.; Shemchuk, Daria V.; Alekseeva, Irina P.; Mudryi, Alexandr V.; Zhivulko, Vadim D.; Borodavchenko, Olga M.

    2016-12-01

    Glasses of the K2Osbnd ZnOsbnd Al2O3sbnd SiO2 system co-doped with Eu2O3 and Yb2O3 were prepared by the melt-quenching technique. Transparent zincite (ZnO) glass-ceramics were obtained by secondary heat-treatments at 680-860 °C. At 860 °C, traces of Eu oxyapatite appeared in addition to ZnO nanocrystals. The average crystal size obtained from the X-ray diffraction data was found to range between 14 and 35 nm. Absorption spectra of the initial glasses are composed of an absorption edge and absorption bands due to electronic transitions of Eu3+ ions. With heat-treatment, the absorption edge pronouncedly shifts to the visible spectral range. The luminescence properties of the glass and glass-ceramics were studied by measuring their excitation and emission spectra at 300, 78, and 4.2 K. Strong red emission of Eu3+ ions dominated by the 5D0-7F2 (612 nm) electric dipole transition was detected. Changes in the luminescence properties of the Eu3+-related excitation and emission bands were observed after heat-treatments at 680 °C and 860 °C. The ZnO nanocrystals showed both broad luminescence (400-850 nm) and free-exciton emission near 3.3 eV at room temperature. The upconversion luminescence spectrum of the initial glass was obtained under excitation of the 976 nm laser source.

  3. Physical study on Cobalt-Indium Co-doped ZnO nanofilms as hydrophobic surfaces

    NASA Astrophysics Data System (ADS)

    Mimouni, R.; Mahdhi, N.; Boubaker, K.; Madouri, A.; Amlouk, M.

    2016-03-01

    The present work reports some physical investigations on (Co,In) codoped zinc oxide nanofilms deposited on glass substrates at 460 °C by the spray pyrolysis technique. The effect of Co and In concentration on the structural, morphological, optical and surface wettability properties have been investigated using X-ray diffraction (XRD) patterns, Raman spectroscopy, SEM, optical measurement, photoluminescence spectroscopy as well as the measurement of hydrophobicity in terms of water contact angle. It is found that all films crystallized in würtzite ZnO phase, with a preferentially orientation towards (002) direction parallel to c-axis. The Raman spectra of the samples exhibit the presence of E2high characteristic mode of würtzite structure with high crystallinity as well as two dominant bands 1LO and 2LO. Also, no additional modes introduced by codopoing have been found. SEM micrographs show the uniform deposition of fine grains on surface films. Thicknesses of films are less than 100 nm. In addition, optical investigations indicate that the band gap narrowing of (Co,In) codoped ZnO thin films is due to the increase in the band tail width. Indeed, PL study indicates that (Co,In) codoped ZnO nanofilms exhibit a large decrease of the UV luminescence, which is assigned to the trapping of photo-generated electrons by both In3+ and Co2+ ions as well as an improvement of charge separation in the ZnO thin films. Finally, the (Co,In) codoping influences the surface wettability property and transform the ZnO character from hydrophilic (θ < 90°) for pure ZnO nanofilm to hydrophobic (θ > 90°) for (Co,In) codoped ZnO ones.

  4. Systematic approach on the fabrication of Co doped ZnO semiconducting nanoparticles by mixture of fuel approach for Antibacterial applications

    NASA Astrophysics Data System (ADS)

    Rajendar, V.; Dayakar, T.; Shobhan, K.; Srikanth, I.; Venkateswara Rao, K.

    2014-11-01

    Zinc oxide (ZnO) is a wide band gap semiconductor (3.2 eV) with a high exciton binding energy (60 meV), where it has wide applications in advanced spintronic devices. The theoretical prediction of room temperature ferromagnetism and also antibacterial activity will be possible through the investigation of diluted magnetic semiconductors (DMS), such as transition metal doped ZnO, especially Cobalt doped ZnO. The aim of the work is the synthesis of Cobalt (Co) doped ZnO nanopowders were prepared Zn1-xCoxO (0 ⩽ x ⩾ 0.09) nanopowders from Sol-Gel auto combustion method have been synthesized with precursors such as Zinc and Cobalt nitrates with the assistance Ammonium acetate & Urea as fuel by increasing the cobalt concentration in zinc oxide and their structural, morphological, optical, Thermal, magnetic and antibacterial properties were studied by X-ray diffraction (XRD), field emission scanning electron microscope (FESEM), Transmission Electron microscope (TEM), UV-visible spectroscopy, thermo gravimetric/differential thermal analysis (TG/DTA) and vibrating sample magneto meter (VSM). From the antibacterial studies, against gram positive Bacillus subtilis bacteria is most abundant bacteria in soil and indoor atmosphere, which affects the stored spintronic devices so that the devices should be made with antibacterial activity of DMS like Co doped ZnO. In this article is found that ZnO:Co nanopowders with higher Co doping level (0.07 and 0.09 wt%) exhibit good antibacterial efficiency. The magnetization curves obtained using vibrating sample magnetometer (VSM) show a sign of strong room temperature ferromagnetic behavior when the Co doping level is 0.05 wt% and a weak room temperature ferromagnetic behavior Co doping level is below 0.07 wt%, and also they found to exhibit antiferromagnetic and paramagnetic properties, when the Co doping levels are 0.07 and 0.09 wt%, respectively, to enhance and increase the special magnetic and antibacterial property for

  5. Structural, linear and nonlinear optical properties of co-doped ZnO thin films

    NASA Astrophysics Data System (ADS)

    Shaaban, E. R.; El-Hagary, M.; Moustafa, El Sayed; Hassan, H. Shokry; Ismail, Yasser A. M.; Emam-Ismail, M.; Ali, A. S.

    2016-01-01

    Different compositions of Co-doped zinc oxide [(Zn(1- x)Co x O) ( x = 0, 0.02, 0.04, 0.06, 0.08 and 0.10)] thin films were evaporated onto highly clean glass substrates by thermal evaporation technique using a modified source. The structural properties investigated by X-ray diffraction revealed hexagonal wurtzite ZnO-type structure. The crystallite size of the films was found to decrease with increasing Co content. The optical characterization of the films has been carried out using spectral transmittance and reflectance obtained in the wavelength range from 300 to 2500 nm. The refractive index has been found to increase with increasing Co content. It was further found that optical energy gap decreases from 3.28 to 3.03 eV with increasing Co content from x = 0 to x = 0.10, respectively. The dispersion of refractive index has been analyzed in terms of Wemple-DiDomenico (WDD) single-oscillator model. The oscillator parameters, the single-oscillator energy ( E o), the dispersion energy ( E d), and the static refractive index ( n 0), were determined. The nonlinear refractive index of the Zn(1- x)Co x O thin films was calculated and revealed well correlation with the linear refractive index and WDD parameters which in turn depend on the density and molar volume of the system.

  6. Co-doping effects on luminescence and scintillation properties of Ce doped (Lu,Gd)3(Ga,Al)5O12 scintillator

    NASA Astrophysics Data System (ADS)

    Yamaguchi, Hiroaki; Kamada, Kei; Kurosawa, Shunsuke; Pejchal, Jan; Shoji, Yasuhiro; Yokota, Yuui; Ohashi, Yuji; Yoshikawa, Akira

    2016-11-01

    Mg co-doping effects on scintillation properties of Ce:Lu1Gd2(Ga,Al)5O12 (LGGAG) were investigated. Mg 200 ppm co-doped Ce:LGGAG single crystals were prepared by micro pulling down method. Absorption and luminescence spectra were measured together with several other scintillation characteristics, namely the scintillation decay and light yield to reveal the effect of Mg co-doping. Ce4+ charge transfer absorption was observed below 300 nm in Mg,Ce:LGGAG which is in good agreement with previous reports. The scintillation decay times were accelerated by Mg co-doping.

  7. Study on Co-doped ZnO comparatively by first-principles calculations and relevant experiments

    NASA Astrophysics Data System (ADS)

    Su, Y. L.; Zhang, Q. Y.; Zhou, N.; Ma, C. Y.; Liu, X. Z.; Zhao, J. J.

    2017-01-01

    Co-doped ZnO was studied using first-principles methods with comparison to experimental results taken from epitaxial Zn1-xCoxO (x 0.05) films. Density of Co2+ ions was determined using absorption spectra for the first time, and then a definite correlation between metallic Co clusters and the magnetism of the ZnCoO films was proved and the average number of Co atoms in the metallic Co clusters was estimated to be less than 200 using a superparamagnetic model. First-principles calculations of ZnCoO alloys and the relevant problems were discussed by comparing the electronic structures with absorption spectra and the results calculated by Tanabe-Sugano theory. U correction was proved to be necessary for calculating the band-gap energy of ZnCoO alloys, but other optical properties related to Co2+ ions are incorrect and the conclusion for magnetic properties is ambiguous due to uncertainty of the calculated highly localized states, which are in pressing for solution in study of material properties relevant to electronic structure.

  8. Enhanced room temperature ferromagnetism and photoluminescence behavior of Cu-doped ZnO co-doped with Mn

    NASA Astrophysics Data System (ADS)

    Ashokkumar, M.; Muthukumaran, S.

    2015-05-01

    Cu, Mn co-doped ZnO nanoparticles were successfully synthesized by the sol-gel technique. XRD pattern described that Mn-doping did not affect the hexagonal wurtzite structure of the samples and no secondary phases were found. The reduced crystallite size at Mn=2% is due to the suppression of grain surface growth by foreign impurity. The enhancement of crystal size after Mn=2% is due to the expansion of lattice volume produced by the distortion around the dopant ion. The better dielectric constant and conductivity noticed at Mn=2% are explained by charge carrier density and crystallite size. The suppression of broad UV band by Mn-doping is discussed based on the generation of non-radiative recombination centers. Hysteresis loop showed the clear room temperature ferromagnetism in all the samples and the magnetization increased with Mn-doping. Better electrical and magnetic behavior of Zn0.94Cu0.04Mn0.02O sample is suggested for effective opto-magnetic devices.

  9. Role of donor defects in stabilizing room temperature ferromagnetism in (Mn, Co) co-doped ZnO nanoparticles.

    PubMed

    Naeem, M; Hasanain, S K

    2012-06-20

    We report the effects of co-doping ZnO with Co and Mn in an n-type environment on ferromagnetism (FM). Two sets of samples, Zn(0.95-x)Co(0.04)Mn(x)O (0.000 ≤ x ≤ 0.02) and Zn(0.95-y)Co(y)Mn(0.04)O (0.000 ≤ y ≤ 0.02), were synthesized by the chemical route with oxygen vacancies introduced via annealing in a forming gas (reducing the atmosphere). In addition to the magnetization, the particles were characterized by x-ray diffraction, diffuse reflectance spectroscopy and x-ray absorption near-edge emission spectroscopy. The Co and Mn ions were determined to be in the + 2 state in a tetrahedral symmetry, with no evidence of metallic Co or Mn. We find that while a purely Mn-doped sample exhibits weak FM at room temperature, the general effect of Mn as a co-dopant with Co, in an n-type environment, is to decrease the moment strongly. All of our results can be systematically explained within the context of defect mediated FM in these wide bandgap semiconductors, where the coincidence of the spin-split-impurity (defect) band states and the 3d states leads to the development of a net moment alongside the formation of spin polarons.

  10. Structural, optical and magnetic properties of Cu and V co-doped ZnO nanoparticles

    NASA Astrophysics Data System (ADS)

    Liu, Huilian; Cheng, Xin; Liu, Hongbo; Yang, Jinghai; Liu, Yang; Liu, Xiaoyan; Gao, Ming; Wei, Maobin; Zhang, Xu; Jiang, Yuhong

    2013-01-01

    Zn0.98-xCuxV0.02O (x=0, 0.01, 0.02 and 0.03) samples were synthesized by the sol-gel technology to dope up to 3% Cu in ZnO. Investigations of structural, optical and magnetic properties of the samples have been done. The results of X-ray diffraction (XRD), transmission electron microscope (TEM) and X-ray photoelectron spectroscopy (XPS) indicated that the V and Cu ions were incorporated into the crystal lattices of ZnO. With Cu doping concentration increasing up to 2 at%, the XRD results showed that all diffraction peaks corresponded to the wurtzite structure of ZnO. Photoluminescence (PL) measurements showed that Zn0.98-xCuxV0.02O powders exhibited that the position of the ultraviolet (UV) emission peak of the samples showed an obvious red-shift and the green emission peak enhanced significantly with Cu doping in ZnVO nanoparticle. Magnetic measurements indicated that room temperature ferromagnetism (RTFM) of Zn0.98-xCuxV0.02O was an intrinsic property when Cu concentration was less than 3 at%. The saturation magnetization (Ms) of Zn0.98-xCuxV0.02O (x=0, 0.01 and 0.02) increased with the increase of the Cu concentration.

  11. Synergistic effect of Indium and Gallium co-doping on growth behavior and physical properties of hydrothermally grown ZnO nanorods

    NASA Astrophysics Data System (ADS)

    Lim, Jun Hyung; Lee, Seung Muk; Kim, Hyun-Suk; Kim, Hyun You; Park, Jozeph; Jung, Seung-Boo; Park, Geun Chul; Kim, Jungho; Joo, Jinho

    2017-02-01

    We synthesized ZnO nanorods (NRs) using simple hydrothermal method, with the simultaneous incorporation of gallium (Ga) and indium (In), in addition, investigated the co-doping effect on the morphology, microstructure, electronic structure, and electrical/optical properties. The growth behavior of the doped NRs was affected by the nuclei density and polarity of the (001) plane. The c-axis parameter of the co-doped NRs was similar to that of undoped NRs due to the compensated lattice distortion caused by the presence of dopants that are both larger (In3+) and smaller (Ga3+) than the host Zn2+ cations. Red shifts in the ultraviolet emission peaks were observed in all doped NRs, owing to the combined effects of NR size, band gap renormalization, and the presence of stacking faults created by the dopant-induced lattice distortions. In addition, the NR/p-GaN diodes using co-doped NRs exhibited superior electrical conductivity compared to the other specimens due to the increase in the charge carrier density of NRs and the relatively large effective contact area of (001) planes. The simultaneous doping of In and Ga is therefore anticipated to provide a broader range of optical, physical, and electrical properties of ZnO NRs for a variety of opto-electronic applications.

  12. Synergistic effect of Indium and Gallium co-doping on growth behavior and physical properties of hydrothermally grown ZnO nanorods

    PubMed Central

    Lim, Jun Hyung; Lee, Seung Muk; Kim, Hyun-Suk; Kim, Hyun You; Park, Jozeph; Jung, Seung-Boo; Park, Geun Chul; Kim, Jungho; Joo, Jinho

    2017-01-01

    We synthesized ZnO nanorods (NRs) using simple hydrothermal method, with the simultaneous incorporation of gallium (Ga) and indium (In), in addition, investigated the co-doping effect on the morphology, microstructure, electronic structure, and electrical/optical properties. The growth behavior of the doped NRs was affected by the nuclei density and polarity of the (001) plane. The c-axis parameter of the co-doped NRs was similar to that of undoped NRs due to the compensated lattice distortion caused by the presence of dopants that are both larger (In3+) and smaller (Ga3+) than the host Zn2+ cations. Red shifts in the ultraviolet emission peaks were observed in all doped NRs, owing to the combined effects of NR size, band gap renormalization, and the presence of stacking faults created by the dopant-induced lattice distortions. In addition, the NR/p-GaN diodes using co-doped NRs exhibited superior electrical conductivity compared to the other specimens due to the increase in the charge carrier density of NRs and the relatively large effective contact area of (001) planes. The simultaneous doping of In and Ga is therefore anticipated to provide a broader range of optical, physical, and electrical properties of ZnO NRs for a variety of opto-electronic applications. PMID:28155879

  13. Enhanced room temperature ferromagnetism in electrodeposited Co-doped ZnO nanostructured thin films by controlling the oxygen vacancy defects

    SciTech Connect

    Simimol, A.; Anappara, Aji A.; Greulich-Weber, S.; Chowdhury, Prasanta; Barshilia, Harish C.

    2015-06-07

    We report the growth of un-doped and cobalt doped ZnO nanostructures fabricated on FTO coated glass substrates using electrodeposition method. A detailed study on the effects of dopant concentration on morphology, structural, optical, and magnetic properties of the ZnO nanostructures has been carried out systematically by varying the Co concentration (c.{sub Co}) from 0.01 to 1 mM. For c.{sub Co }≤ 0.2 mM, h-wurtzite phase with no secondary phases of Co were present in the ZnO nanostructures. For c.{sub Co} ≤ 0.2 mM, the photoluminescence spectra exhibited a decrease in the intensity of ultraviolet emission as well as band-gap narrowing with an increase in dopant concentration. All the doped samples displayed a broad emission in the visible range and its intensity increased with an increase in Co concentration. It was found that the defect centers such as oxygen vacancies and zinc interstitials were the source of the visible emission. The X-ray photoelectron spectroscopy studies revealed, Co was primarily in the divalent state, replacing the Zn ion inside the tetrahedral crystal site of ZnO without forming any cluster or secondary phases of Co. The un-doped ZnO nanorods exhibited diamagnetic behavior and it remained up to a c.{sub Co} of 0.05 mM, while for c.{sub Co }> 0.05 mM, the ZnO nanostructures exhibited ferromagnetic behavior at room temperature. The coercivity increased to 695 G for 0.2 mM Co-doped sample and then it decreased for c.{sub Co }> 0.2 mM. Our results illustrate that up to a threshold concentration of 0.2 mM, the strong ferromagnetism is due to the oxygen vacancy defects centers, which exist in the Co-doped ZnO nanostructures. The origin of strong ferromagnetism at room temperature in Co-doped ZnO nanostructures is attributed to the s-d exchange interaction between the localized spin moments resulting from the oxygen vacancies and d electrons of Co{sup 2+} ions. Our findings provide a new insight for tuning the

  14. Effects of F- on the optical and spectroscopic properties of Yb3+/Al3+-co-doped silica glass

    NASA Astrophysics Data System (ADS)

    Xu, Wenbin; Yu, Chunlei; Wang, Shikai; Lou, Fengguang; Feng, Suya; Wang, Meng; Zhou, Qinling; Chen, Danping; Hu, Lili; Guzik, Malgorzata; Boulon, Georges

    2015-04-01

    Yb3+/Al3+-co-doped silica glasses with different F- content were prepared in this work by sol-gel method combined with high temperature sintering. XRF, FTIR and XPS methods were used to confirm the presence of F-. The effects of F- on the optical and spectroscopic properties of these glasses have been investigated. It is worth to notice that the F-/Si4+ mass ratio equal to 9% is a significant value showing a real change in the variation trends of numerous following parameters: refractive index, UV absorption edge, absorption and emission cross sections, scalar crystal-field NJ and fluorescent lifetimes. Furthermore, introduction of F- can adjust the refractive index of Yb3+/Al3+-co-doped silica glass and it is useful for large mode area (LMA) fibers.

  15. Fabrication and laser performance of Yb3+/Al3+ co-doped photonic crystal fiber synthesized by plasma nonchemical vapor deposition method

    NASA Astrophysics Data System (ADS)

    Xia, Changming; Zhou, Guiyao; Liu, Jiantao; Wang, Chao; Han, Ying; Zhang, Wei; Yuan, Jinhui

    2015-10-01

    In this paper, the bulk Yb3+/Al3+ co-doped silica glass with 1.3 Yb2O3-2.5Al2O3-96.2SiO2 (wt%) are synthesized by plasma nonchemical vapor deposition method combining solution doping technology, where the inductively coupled plasma is used as the heat source. The influence of different O2/N2 ratios on the fluorescence properties of Yb3+/Al3+ co-doped silica glass are investigated. The large mode area photonic crystal fiber (PCF) is fabricated by using the bulk Yb3+/Al3+ co-doped silica glass as fiber core. The laser performance of Yb3+/Al3+ co-doped photonic crystal fiber is studied.

  16. Defects in paramagnetic Co-doped ZnO films studied by transmission electron microscopy

    SciTech Connect

    Kovacs, Andras; Ney, A.; Duchamp, Martial; Ney, V.; Boothroyd, Chris; Galindo, Pedro L.; Kaspar, Tiffany C.; Chambers, Scott A.; Dunin-Borkowski, Rafal

    2013-12-23

    We have studied planar defects in epitaxial Co:ZnO dilute magnetic semiconductor thin films deposited on c-plane sapphire (Al2O3) and the Co:ZnO/Al2O3 interface structure at atomic resolution using aberration-corrected transmission electron microscopy (TEM) and electron energy-loss spectroscopy (EELS). Comparing Co:ZnO samples deposited by pulsed laser deposition and reactive magnetron sputtering, both exhibit extrinsic stacking faults, incoherent interface structures, and compositional variations within the first 3-4 Co:ZnO layers at the interface.. In addition, we have measured the local strain which reveals the lattice distortion around the stacking faults.

  17. Defects in paramagnetic Co-doped ZnO films studied by transmission electron microscopy

    SciTech Connect

    Kovács, A.; Duchamp, M.; Boothroyd, C. B.; Dunin-Borkowski, R. E.; Ney, A.; Ney, V.; Galindo, P. L.; Kaspar, T. C.; Chambers, S. A.

    2013-12-28

    We study planar defects in epitaxial Co:ZnO dilute magnetic semiconductor thin films deposited on c-plane sapphire (Al{sub 2}O{sub 3}), as well as the Co:ZnO/Al{sub 2}O{sub 3} interface, using aberration-corrected transmission electron microscopy and electron energy-loss spectroscopy. Co:ZnO samples that were deposited using pulsed laser deposition and reactive magnetron sputtering are both found to contain extrinsic stacking faults, incoherent interface structures, and compositional variations within the first 3–4 Co:ZnO layers next to the Al{sub 2}O{sub 3} substrate. The stacking fault density is in the range of 10{sup 17} cm{sup −3}. We also measure the local lattice distortions around the stacking faults. It is shown that despite the relatively high density of planar defects, lattice distortions, and small compositional variation, the Co:ZnO films retain paramagnetic properties.

  18. Interplay of dopant, defects and electronic structure in driving ferromagnetism in Co-doped oxides: TiO2, CeO2 and ZnO

    NASA Astrophysics Data System (ADS)

    Ali, Bakhtyar; Shah, Lubna R.; Ni, C.; Xiao, J. Q.; Shah, S. Ismat

    2009-11-01

    A comprehensive study of the defects and impurity (Co)-driven ferromagnetism is undertaken in the oxide semiconductors: TiO2, ZnO and CeO2. The effect of magnetic (Co2+) and non-magnetic (Cu2+) impurities in conjunction with defects, such as oxygen vacancies (Vo), have been thoroughly investigated. Analyses of the x-ray diffraction (XRD) and x-ray photoelectron spectroscopy (XPS) data reveal the incorporation of cobalt in the lattice, with no signature of cobalt segregation. It is shown that oxygen vacancies are necessary for the ferromagnetic coupling in the Co-doped oxides mentioned above. The possible exchange mechanisms responsible for the ferromagnetism are discussed in light of the energy levels of dopants in the host oxides. In addition, Co and Cu co-doped TiO2 samples are studied in order to understand the role of point defects in establishing room temperature ferromagnetism. The parameters calculated from the bound magnetic polaron (BMP) and Jorgensen's optical electronegativity models offer a satisfactory explanation of the defect-driven ferromagnetism in the doped/co-doped samples.

  19. 2 inch size Czochralski growth and scintillation properties of Li+ co-doped Ce:Gd3Ga3Al2O12

    NASA Astrophysics Data System (ADS)

    Kamada, Kei; Shoji, Yasuhiro; Kochurikhin, Vladimir V.; Yoshino, Masao; Okumura, Satoshi; Yamamoto, Seiichi; Yeom, Jung Yeol; Kurosawa, Shunsuke; Yokota, Yuui; Ohashi, Yuji; Nikl, Martin; Yoshino, Masao; Yoshikawa, Akira

    2017-03-01

    The 2 inch size Li 0.15 and 1.35 mol% co-doped Ce:Gd3Al2Ga3O12 single crystals were prepared by the Czochralski (Cz) method. Absorption and luminescence spectra were measured together with several other scintillation characteristics, namely the scintillation decay and light yield to reveal the effect of Li co-doping. Ce4+ CT absorption below 350 nm is clearly enhanced by Li co-doping as same as divalent ions co-doping. By 1.35 at.% Li co-doping, light yield was decrease to 88% of the Ce: GAGG standard and decay time was accelerated to 34.3ns 21.0%, 84.6ns 68.7%, 480ns 10.3%. The timing resolution measurement for a pair of 3 × 3 × 3mm3 size Li,Ce:GAGG scintillator crystals was performed using Si-PMs and the timing resolution of the 1.35 at.% Li co-doped Ce:GAGG was 218ps.

  20. Influence of (Co-Mn) co-doping on the microstructures, optical properties of sol-gel derived ZnO nanoparticles

    NASA Astrophysics Data System (ADS)

    Neena, D.; Shah, A. H.; Deshmukh, K.; Ahmad, H.; Fu, D. J.; Kondamareddy, K. K.; Kumar, P.; Dwivedi, R. K.; Sing, V.

    2016-03-01

    A systematic investigation on the synthesis, characterization, optical and magnetic properties of (Co-Mn) co doped ZnO nanoparticles synthesized by sol-gel method is reported. Structural, Optical and magnetic properties of present sample have been characterized by X-ray diffraction (XRD), UV-VIS-NIR spectroscopy and VSM techniques. The single- phased wurtzite structure has been confirmed by XRD analysis. The nanoparticles nature of the samples and their crystallinity has been investigated by TEM measurements. Optical studies revealed red shift (3.315-3.289 eV) with increasing Mn doping concentration in the absorbance spectrum. Magnetization studies showed that Zn0.7Co0.2Mn0.1O exhibits ferromagnetic behavior.

  1. Co-doped ZnO epitaxial films: from a Brillouin-like paramagnet to a phase-separated superparamagnetic ensemble.

    PubMed

    Ney, V; Ye, S; Ollefs, K; Kammermeier, T; Wilhelm, F; Rogalev, A; Ney, A

    2010-09-01

    Co-doped ZnO films are epitaxially grown on sapphire by reactive magnetron sputtering. The preparation conditions such as temperature and the composition of the sputtering gas are systematically varied. For optimized growth conditions virtually all Co dopant atoms are located on substitutional Zn lattice sites as revealed by X-ray linear dichroism (XLD). The material behaves as a Brillouin-like paramagnet with S = 3/2 and L = 1 as revealed by integral and element specific magnetometry. Reducing the oxygen content during preparation leads to the onset of phase separation as revealed by X-ray diffraction, and more clearly by a strong reduction of the XLD signal. Such samples behave like a blocked superparamagnetic ensemble. In the entire range of preparation conditions no signs of intrinsic ferromagnetism are found.

  2. Coherent effect of Er 3+-Yb 3+ co-doping on enhanced photoluminescence properties of Al 2O 3 powders by the sol-gel method

    NASA Astrophysics Data System (ADS)

    Wang, X. J.; Lei, M. K.; Yang, T.; Cao, B. S.

    2004-08-01

    The Er 3+-Yb 3+ co-doped Al 2O 3 powders have been prepared by the sol-gel method, using the aluminium isopropoxide [Al(OC 3H 7) 3]-derived Al 2O 3 sols with the addition of erbium nitrate [Er(NO 3) 3 · 5H 2O] and ytterbium nitrate [Yb(NO 3) 3 · 5H 2O]. The phase structure, including only two crystalline types of Al 2O 3 phases, γ and θ, was obtained for the 0-1 mol% Er 3+ and 0-2 mol% Yb 3+ co-doped Al 2O 3 powders at the different sintering temperature of 800-1000 °C. The evidence for indirect pumping of Er 3+ through transfer of energy from Yb 3+ was found in the Al 2O 3 matrix material. For the 0.5 mol% Er 3+ and 0.5 mol% Yb 3+, the 1.0 mol% Er 3+ and 1.0 mol% Yb 3+ co-doped Al 2O 3 powders, the photoluminescence (PL) peak intensity at 1.533 μm in the spectra increased by a factor of about 2, and the corresponding full widths at half maximum (FWHM) was increased to about 59 nm, compared with that of the 0.5 and 1 mol% Er 3+-doped Al 2O 3 powders, respectively. At the same Er 3+-Yb 3+ co-doping concentration, the PL intensity increased with increasing the sintering temperature from 800 to 1000 °C. Coherent effect of Er 3+-Yb 3+ co-doping on enhanced PL properties of Al 2O 3 powders was observed. A proper molar ratio of 1:1 for Yb 3+ and Er 3+ led to the maximum PL intensity at the same sintering temperature.

  3. The effects of group-I elements co-doping with Mn in ZnO dilute magnetic semiconductor

    NASA Astrophysics Data System (ADS)

    Zhang, Liqiang; Zhang, Yinzhu; Ye, Zhizhen; Lu, Jianguo; Lu, Bin; He, Bo

    2012-06-01

    Mn-Li codoped ZnO (Zn(Mn,Li)O), Mn-Na codoped ZnO (Zn(Mn,Na)O), and Mn-K codoped ZnO (Zn(Mn,K)O) thin films were deposited on quartz substrates by pulsed laser deposition. The doping effects of group-I elements (e.g., Li, Na, and K) on the structural, magnetic, and optical properties of the Mn doped ZnO (ZnMnO) films were discussed. X-ray diffraction and K-edge x-ray absorption near-edge structure measurements revealed that all the films showed a hexagonal wurtzite ZnO structure, and no other clusters, precipitates, or second phases were detected. Zn(Mn,Na)O and Zn(Mn,Li)O films showed a weak p-type conductivity, while the Zn(Mn,K)O film appeared a highly resistivity. The saturation magnetization of Zn(Mn,Na)O and Zn(Mn,Li)O films was 1.2 and 0.18 μB/Mn, respectively. The hole-related defects, induced by doping with a low content of Li or Na, contributed to the room temperature ferromagnetism in the ZnMnO system.

  4. Enhanced photocatalytic degradation of humic acids using Al and Fe co-doped TiO2 nanotubes under UV/ozonation for drinking water purification.

    PubMed

    Yuan, Rongfang; Zhou, Beihai; Hua, Duo; Shi, Chunhong

    2013-11-15

    O3/UV/TiO2 was used to effectively decompose humic acids (HAs) in drinking water. To obtain a large specific surface area and low band gap energy, Al and Fe co-doped TiO2 nanotubes were successfully synthesized using the hydrothermal method. The effect of the optimal co-doped TiO2 nanotubes catalyst on the HAs removal efficiency through O3/UV/co-doped TiO2 process was investigated. The highest HAs removal efficiency (79.4%) that exhibited a pseudo-first-order rate constant of 0.172 min(-1) was achieved, in the presence of 550 °C calcined 1.0% co-doped TiO2 nanotubes with an Al:Fe ratio of 0.25:0.75. The effects of calcination temperature and doping concentration on anatase phase weight fractions, average crystallite sizes, Brunauer-Emmett-Teller surface area, catalyst band gap energy, and catalyst photocatalytic activity were also discussed. The inorganic anions also affected the catalyst photocatalytic ability. In a neutral solution, SO4(2-) slightly promoted HAs removal. However, HCO3(-) was found to significantly inhibit the catalyst activity, whereas Cl(-) had negligible effect on photocatalytic ability.

  5. Combinatorial approach to MgHf co-doped AlN thin films for Vibrational Energy Harvesters

    NASA Astrophysics Data System (ADS)

    Nguyen, H. H.; Oguchi, H.; Kuwano, H.

    2016-11-01

    In this report, we studied MgHf co-doped AlN ((Mg,Hf)xA11-xN) aiming for developing an AlN-based dielectric material with the large piezoelectric coefficient. To rapidly screen the wide range of composition, we applied combinatorial film growth approach. To get continuous composition gradient on a single substrate, films were deposited on Si (100) substrates by sputtering AlN and Mg-Hf targets simultaneously. Crystal structure was investigated by X-ray diffractometer equipped with a two-dimensional detector (2D-XRD). Composition was determined by Energy Dispersive Spectroscopy (EDS). These studies revealed that we successfully covered the widest ever composition range of 0 < x < 0.24 for this material. In addition, these studies found that we succeeded in realizing largest ever c-axis expansion of 2.7% at x = 0.24, which will lead to the highest enhancement in the piezoelectric coefficient. The results of this study opened the way for high-throughput development of the dielectric materials.

  6. Investigation of Co-Doped ZnO Nanowires by X-ray Absorption Spectroscopy and Ab Initio Simulation

    NASA Astrophysics Data System (ADS)

    Chu, Manh Hung; Nguyen, Van Duy; Nguyen, Duc Hoa; Nguyen, Van Hieu

    2017-01-01

    The local structure of single room- and high-temperature Co-implanted ZnO nanowires with subsequent thermal annealing has been studied using hard-x-ray techniques in combination with ab initio Zn K-edge x-ray absorption near-edge structure (XANES) simulations. X-ray fluorescence data reveal a homogeneous distribution of Co atoms/ions with concentration of about 0.1 at.% to 0.3 at.% in the nanowires. XANES data indicate substitutional incorporation of Co2+ ions at Zn sites in both types of nanowire. Improved structural order around Co atoms is obtained in nanowires with high-temperature ion implantation followed by thermal annealing. The ab initio Zn K-edge simulations not only confirm recovery of implantation-induced damage in the ZnO host lattice by the thermal annealing process, but also assist in studying the effect of oxygen vacancies in the Zn K-edge XANES spectra. Microphotoluminescence data certify that high-temperature ion implantation with subsequent thermal annealing is an effective approach to achieve the strongest optical activation of Co ions and good energy transfer to Co ions from the ZnO host matrix.

  7. Li and Ag Co-Doped ZnO Photocatalyst for Degradation of RO 4 Dye Under Solar Light Irradiation.

    PubMed

    Dhatshanamurthi, P; Shanthi, M

    2016-06-01

    The synthesis of Li doped Ag-ZnO (Li-Ag-ZnO) has been successfully achieved by a sonochemically assisted precipitation-decomposition method. The synthesized catalyst was characterized by X-ray diffraction (XRD), transmission electron microscopy (TEM), field emission scanning electron microscopy (FE-SEM), energy dispersive spectroscopy (EDS), diffuse reflectance spectra (DRS), photoluminescence spectra (PL), X-ray photoelectron spectra (XPS) and BET surface area measurements. The photocatalytic activity of Li-Ag-ZnO was investigated for the degradation of Reactive orange 4 (RO 4) dye in aqueous solution under solar light irradiation. Co-dopants shift the absorbance of ZnO to the visible region. Li-Ag-ZnO is found to be more efficient than Ag-ZnO, Li-ZnO, commercial ZnO and prepared ZnO at pH 7 for the mineralization of RO 4 dye under solar light irradiation. The influences of operational parameters such as the amount of photocatalyst, dye concentration, initial pH on photo-mineralization of RO 4 have been analyzed. The mineralization of RO 4 dye has been confirmed by COD measurements. A degradation mechanism is proposed for the degradation of RO 4 under solar light. The catalyst was found to be more stable and reusable.

  8. Bifunctional Li and Co Doped ZnO Nanostructures Synthesized by Solvothermal Method: Stabilizer Controlled Shape and Size Tuning.

    PubMed

    Jayakumar, O D; Sudarsan, V; Tyagi, A K

    2015-04-01

    1D nanostructures of ZnO, Zn0.95Co0.05O and Zn0.85Co0.05Li0.10 were synthesized by a solvothermal chemical method with and without using oleic acid as a stabilizer. We report a very interesting observation of both room temperature ferromagnetism and photoluminescence properties along with development of different morphological transformation of these nanostructures on doping Co and Li in ZnO in the presence and absence of oleic acid. Zn0.95Co0.05O sample prepared in the presence of oleic acid showed increased saturation magnetization value (~ 4.1 emu/g and) compared to Zn0.95Co0.05O prepared without oleic acid (~ 1.1 emu/g). In both the cases it is observed that Li incorporation further enhances the room temperature ferromagnetic (RTFM) behavior and saturation magnetization values (~ 6 emu/g) of luminescent Zn0.95Co0.05 nanostructures. These results are significant, as the luminescent 1 D RTFM materials will have implications in photo magnetic devices like magneto-optical switches and sensors.

  9. Effect of Mg2+ ions co-doping on timing performance and radiation tolerance of Cerium doped Gd3Al2Ga3O12 crystals

    NASA Astrophysics Data System (ADS)

    Lucchini, M. T.; Babin, V.; Bohacek, P.; Gundacker, S.; Kamada, K.; Nikl, M.; Petrosyan, A.; Yoshikawa, A.; Auffray, E.

    2016-04-01

    Inorganic scintillators with high density and high light yield are of major interest for applications in medical imaging and high energy physics detectors. In this work, the optical and scintillation properties of Mg co-doped Ce:Gd3Al2Ga3O12 crystals, grown using Czochralski technique, have been investigated and compared with Ce:Gd3Al2Ga3O12 ones prepared with identical technology. Improvements in the timing performance of the Mg co-doped samples with respect to Ce:Gd3Al2Ga3O12 ones have been measured, namely a substantial shortening of the rise time and scintillation decay components and lower afterglow were achieved. In particular, a significantly better coincidence time resolution of 233 ps FWHM, being a fundamental parameter for TOF-PET devices, has been observed in Mg co-doped crystals. The samples have also shown a good radiation tolerance under high doses of γ-rays, making them suitable candidates for applications in harsh radiation environments, such as detectors at future collider experiments.

  10. A clear effect of charge compensation through Na+ co-doping on the luminescence spectra and decay kinetics of Nd3+-doped CaAl4O7

    NASA Astrophysics Data System (ADS)

    Puchalska, M.; Watras, A.

    2016-06-01

    We present a detailed analysis of luminescence behavior of singly Nd3+ doped and Nd3+, Na+ co-doped calcium aluminates powders: Ca1-xNdxAl4O7 and Ca1-2xNdxNaxAl4O7 (x=0.001-0.1). Relatively intense Nd3+ luminescence in IR region corresponding to typical 4F3/2→4IJ (J=9/2-13/2) transitions with maximum located at about 1079 nm was obtained in all samples on direct excitation into f-f levels. The effect of dopant concentration and charge compensation by co-doping with Na+ ions on morphology and optical properties were studied. The results show that both, the Nd3+ concentration and the alkali metal co-doping affected the optical properties but had no influence on the powders morphology. The studies of luminescence spectra (298 and 77 K) in a function of dopant concentration showed an increasing distortion of the local symmetry of Nd3+with raising activator content due to certain defects created in the crystal lattice. On the other hand Na+ addition led to significant narrowing of absorption and luminescence bands and also a reduction of the number of their components, showing smaller disturbance of Nd3+ ions local symmetries. Consequently, charge compensated by Na+ co-doping materials showed significantly enhanced Nd3+ luminescence. The decrease of emission intensity and luminescence lifetimes with increase of activator concentration was attributed mainly to phonon-assisted cross-relaxation processes between Nd3+ ions. Analysis with Inokuti-Hirayama model indicated dipole-dipole mechanism of ion-ion interaction. Na+ addition led to much smaller concentration quenching due to smaller clustering of dopant ions in CaAl4O7 lattice.

  11. Up-conversion luminescence in Yb(3+)-Er(3+)/Tm(3+) co-doped Al2O3-TiO2 nano-composites.

    PubMed

    Mokoena, Teboho Patrick; Linganiso, Ella Cebisa; Kumar, Vinod; Swart, Hendrik C; Cho, So-Hye; Ntwaeaborwa, Odireleng Martin

    2017-06-15

    The sol gel method was used to prepare rare-earths (Yb(3+)-Er(3+) and Yb(3+)-Tm(3+)) co-doped Al2O3-TiO2 nano-composite powder phosphors and their up-conversion luminescence properties were investigated. Mixed oxides of titania (TiO2) rutile phase and an early stage crystallization of alumina (Al2O3) phase were confirmed from the X-ray diffraction data with the average crystallite size of ∼36nm. The rutile phase TiO2 was further confirmed by selected area diffraction analysis of the composites. Microscopy analysis showed interesting rod-like morphologies with rough surfaces indicating that a spherulitic growth process took place during the crystal growth. Photoluminescence characterization of the phosphors was carried out under near infra-red excitation at 980nm and the prominent emission bands were observed in the visible region at 523, 548 and 658nm for the Yb(3+)-Er(3+) co-doped systems. Emission in bands extending from the visible to near infra-red regions were observed at 480, 650, 693 and 800nm for the Yb(3+)-Tm(3+) co-doped systems. These upconverted emissions and energy transfer mechanisms taking place are discussed in detail.

  12. Control of mean ionic radius at Ca site by Sr co-doping for Ce doped LiCaAlF6 single crystals and the effects on optical and scintillation properties

    NASA Astrophysics Data System (ADS)

    Yokota, Yuui; Yamaji, Akihiro; Kurosawa, Shunsuke; Kamada, Kei; Yoshikawa, Akira

    2014-10-01

    Sr co-doped Ce:LiCaAlF6 [Ce:Li(Ca,Sr)AlF6] crystals with various Ca/Sr ratios were grown by a micro-pulling-down (μ-PD) method and effects of Sr co-doping on crystal structure, chemical composition, optical and scintillation properties for Ce:LiCaAlF6 crystals were investigated as a neutron scintillator. High transparent Ce2%:Li(Ca,Sr)AlF6 crystals with 2% and 5% Sr contents were obtained while Ce2%:Li(Ca,Sr)AlF6 crystals with 10% and 20% Sr contents included milky parts in the crystals. a- and c-axis lengths of Ce:Li(Ca,Sr)AlF6 phase systematically increased with an increase of Sr content. In addition to the emission at 284 and 308 nm from Ce3+ ion, emission peaks at 367 nm appeared by Sr co-doping.

  13. Microstructure and property of diamond-like carbon films with Al and Cr co-doping deposited using a hybrid beams system

    NASA Astrophysics Data System (ADS)

    Dai, Wei; Liu, Jingmao; Geng, Dongsen; Guo, Peng; Zheng, Jun; Wang, Qimin

    2016-12-01

    DLC films with weak carbide former Al and carbide former Cr co-doping (Al:Cr-DLC) were deposited by a hybrid beams system comprising an anode-layer linear ion beam source (LIS) and high power impulse magnetron sputtering using a gas mixture of C2H2 and Ar as the precursor. The doped Al and Cr contents were controlled via adjusting the C2H2 fraction in the gas mixture. The composition, microstructure, compressive stress, mechanical properties and tribological behaviors of the Al:Cr-DLC films were researched carefully using X-ray photoelectron spectroscopy, transmission electron microscopy, Raman spectroscopy, stress-tester, nanoindentation and ball-on-plate tribometer as function of the C2H2 fraction. The results show that the Al and Cr contents in the films increased continuously as the C2H2 fraction decreased. The doped Cr atoms preferred to bond with the carbon while the Al atoms mainly existed in metallic state. Structure modulation with alternate multilayer consisted of Al-poor DLC layer and Al-rich DLC layer was found in the films. Those periodic Al-rich DLC layers can effectively release the residual stress of the films. On the other hand, the formation of the carbide component due to Cr incorporation can help to increase the film hardness. Accordingly, the residual stress of the DLC films can be reduced without sacrificing the film hardness though co-doping Al and Cr atoms. Furthermore, it was found that the periodic Al-rich layer can greatly improve the elastic resilience of the DLC films and thus decreases the film friction coefficient and wear rate significantly. However, the existence of the carbide component would cause abrasive wear and thus deteriorate the wear performance of the films.

  14. Isoelectronic co-doping

    DOEpatents

    Mascarenhas, Angelo

    2004-11-09

    Isoelectronic co-doping of semiconductor compounds and alloys with deep acceptors and deep donors is used to decrease bandgap, to increase concentration of the dopant constituents in the resulting alloys, and to increase carrier mobilities lifetimes. Group III-V compounds and alloys, such as GaAs and GaP, are isoelectronically co-doped with, for example, N and Bi, to customize solar cells, thermal voltaic cells, light emitting diodes, photodetectors, and lasers on GaP, InP, GaAs, Ge, and Si substrates. Isoelectronically co-doped Group II-VI compounds and alloys are also included.

  15. Effect of Mg2+ ions co-doping on luminescence and defects formation processes in Gd3(Ga,Al)5O12:Ce single crystals

    NASA Astrophysics Data System (ADS)

    Babin, V.; Bohacek, P.; Grigorjeva, L.; Kučera, M.; Nikl, M.; Zazubovich, S.; Zolotarjovs, A.

    2017-04-01

    Photo- and radioluminescence and thermally stimulated luminescence characteristics of Ce3+ - doped and Ce3+, Mg2+ co-doped Gd3(Ga,Al)5O12 (GAGG) single crystals of similar composition are investigated in the 9-500 K temperature range. The Ce3+ - related luminescence spectra and the photoluminescence decay kinetics in these crystals are found to be similar. Under photoexcitation in the Ce3+ - and Gd3+ - related absorption bands, no prominent rise of the photoluminescence intensity in time is observed neither in GAGG:Ce,Mg nor in GAGG:Ce crystals. The afterglow is strongly reduced in GAGG:Ce,Mg as compared to GAGG:Ce, and the afterglow decay kinetics is much faster. Co-doping with Mg2+ results in a drastic decrease of the thermally stimulated luminescence (TSL) intensity in the whole investigated temperature range and in the appearance of a new complex Mg2+ - related TSL glow curve peak around 285 K. After irradiation in the Ce3+ - related 3.6 eV absorption band, the TSL intensity in GAGG:Ce,Mg is found to be comparable with that in the GAGG:Ce epitaxial film of similar composition. The Mg2+ - induced changes in the concentration, origin and structure of the crystal lattice defects and their influence on the scintillation characteristics of GAGG:Ce,Mg are discussed.

  16. White luminescence and energy transfer process in Bi3+,Sm3+ co-doped Ca3Al2O6 phosphors

    NASA Astrophysics Data System (ADS)

    Wang, LongJun; Guo, Hai; Wei, YunLe; Noh, Hyeon Mi; Jeong, Jung Hyun

    2015-04-01

    Ca3Al2O6:Bi3+,Sm3+ phosphors were synthesized by conventional solid state reaction method and their luminescent properties were systemically investigated by excitation, emission spectra and decay curves measurement. Through an efficient energy transfer process from Bi3+ to Sm3+, the obtained phosphors exhibit emission from Bi3+ and Sm3+ with considerable intensity under near-ultraviolet excitation (300 nm). Tuning the content of Sm3+ can generate the varied hues from blue green to white. Our research will extend the understanding of interactions between Bi3+ and rare earth ions and show the potential application of Bi3+,Sm3+ co-doped phosphors in W-LEDs field.

  17. Enhancement of optical properties of hydrothermally synthesized TiO{sub 2}/ZrO{sub 2} nanoparticles by Al, Ce Co-doping

    SciTech Connect

    Tomar, Laxmi J.; Bhatt, Piyush J. Desai, Rahul K.; Chakrabarty, Bishwajit S.

    2015-06-24

    Al, Ce co-doped TiO{sub 2}/ZrO{sub 2} (TZ) nano composites have been prepared by hydrothermal method. The structural and optical properties of the obtained samples were investigated by X –ray diffraction (XRD) and UV-Visible spectroscopy respectively. It has been found that the crystallite size of all the samples was distributed in the range 9.19 to 17.41 nm. The content of anatase phase varied in the range 48.71 to 100% depending on doping. The dopant produced lattice strain in material and it was found between 0.027 - 0.069. A clear shift of absorption edge for different dopant has been observed from UV-Visible absorption spectra. The change in optical bandgap, refractive index, absorption co efficient and optical conductivity was also evaluated from absorption spectra.

  18. Structural and superconducting properties of co-doped YBa2-xLaxCu3-xMxOz and La-free YBa2Cu3-xMxOz (M = Al, Zn) high-TC superconductors

    NASA Astrophysics Data System (ADS)

    Hao, S. J.; Jin, W. T.; Guo, C. Q.; Zhang, H.

    2012-05-01

    Two co-doped high-Tc superconducting systems, YBa2-xLaxCu3-xAlxOz and YBa2-xLaxCu3-xZnxOz (0 ⩽ x ⩽ 0.3), both of which have not been reported up to the present, were synthesized. The structural and superconducting properties have been investigated by X-ray diffraction (XRD) and DC magnetization measurement. Comparing the properties of these co-doped systems with single-doped systems YBa2Cu3-xAlxOz and YBa2Cu3-xZnxOz, it shows that in the Al-single-doped YBCO system, the depression of the critical temperature (Tc) with doping is stronger than that in (La, Al)-co-doped system, however, in the Zn-single-doped system, the Tc descends slower than that in (La, Zn)-co-doped system. This is possibly due to the opposite change of the distance between the Ba site and the CuO2 plane induced by the La doping. Besides, the La doping has another effect of improving the solid solubility compared with the Al- or Zn-single-doped system.

  19. Frequency and voltage-dependent electrical and dielectric properties of Al/Co-doped PVA/p-Si structures at room temperature

    NASA Astrophysics Data System (ADS)

    Ibrahim, Yücedağ; Ahmet, Kaya; Şemsettin, Altındal; Ibrahim, Uslu

    2014-04-01

    In order to investigate of cobalt-doped interfacial polyvinyl alcohol (PVA) layer and interface trap (Dit) effects, Al/p-Si Schottky barrier diodes (SBDs) are fabricated, and their electrical and dielectric properties are investigated at room temperature. The forward and reverse admittance measurements are carried out in the frequency and voltage ranges of 30 kHz-300 kHz and -5 V-6 V, respectively. C-V or ɛ'-V plots exhibit two distinct peaks corresponding to inversion and accumulation regions. The first peak is attributed to the existence of Dit, the other to the series resistance (Rs), and interfacial layer. Both the real and imaginary parts of dielectric constant (ɛ' and ɛ″) and electric modulus (M' and M″), loss tangent (tan δ), and AC electrical conductivity (σac) are investigated, each as a function of frequency and applied bias voltage. Each of the M' versus V and M″ versus V plots shows a peak and the magnitude of peak increases with the increasing of frequency. Especially due to the Dit and interfacial PVA layer, both capacitance (C) and conductance (G/w) values are strongly affected, which consequently contributes to deviation from both the electrical and dielectric properties of Al/Co-doped PVA/p-Si (MPS) type SBD. In addition, the voltage-dependent profile of Dit is obtained from the low-high frequency capacitance (CLF-CHF) method.

  20. Photoluminescence and energy transfer in Tb{sup 3+}/Mn{sup 2+} co-doped ZnAl{sub 2}O{sub 4} glass ceramics

    SciTech Connect

    Lakshminarayana, Gandham; Wondraczek, Lothar

    2011-08-15

    We report on Tb{sup 3+} as efficient sensitizer for red photoemission from Mn{sup 2+}-centers in ZnO-B{sub 2}O{sub 3}-Al{sub 2}O{sub 3}-Si{sub 2}O-Na{sub 2}O-SrO glasses and corresponding gahnite glass ceramics. In comparison to singly or co-doped glasses, the glass ceramics exhibit significantly increased emission intensity. Structural considerations, ESR, and dynamic luminescence spectroscopy indicate partial incorporation of Mn{sup 2+} as well as Tb{sup 3+} into the crystalline phase, the former on octahedral Zn{sup 2+}-sites. Interionic distance and charge transfer probability between both species depend on crystallization conditions. This enables control of the energy transfer process and, hence, tunability of the color of photoemission by simultaneous emission from Tb{sup 3+} and Mn{sup 2+} centers. Concentration quenching in Mn{sup 2+}-singly doped materials was found at a critical dopant concentration of about 1.0 mol%. The energy transfer process was studied in detail by dynamic as well as static luminescence spectroscopy. Spectroscopic results suggest the application of the studied materials as single or dual-mode emitting phosphor for luminescent lighting. - Graphical abstract: In the prepared Tb{sup 3+}/Mn{sup 2+} codoped glass ceramics containing gahnite (ZnAl{sub 2}O{sub 4}) nanocrystals, the luminescence color is changed from green light to yellowish-red light with an increase in Mn{sup 2+} concentration due to enhanced energy transfer from Tb{sup 3+} to Mn{sup 2+} ions. This tunability should have potential applications in solid state lighting to produce white light, which can be obtained by appropriately optimizing the ratio of Tb{sup 3+}/Mn{sup 2+} ions under UV(350 nm) excitation. Highlights: > Photoluminescence from Mn{sup 2+} and Tb{sup 3+} singly and co-doped glasses and gahnite glass ceramics was studied. > Occurrence of energy transfer from Tb{sup 3+} to Mn{sup 2+} was confirmed. > Luminescence color tunability is achieved by varying dopant

  1. Computational discovery of lanthanide doped and Co-doped Y{sub 3}Al{sub 5}O{sub 12} for optoelectronic applications

    SciTech Connect

    Choudhary, Kamal; Chernatynskiy, Aleksandr; Phillpot, Simon R.; Sinnott, Susan B.; Mathew, Kiran; Bucholz, Eric W.; Hennig, Richard G.

    2015-09-14

    We systematically elucidate the optoelectronic properties of rare-earth doped and Ce co-doped yttrium aluminum garnet (YAG) using hybrid exchange-correlation functional based density functional theory. The predicted optical transitions agree with the experimental observations for single doped Ce:YAG, Pr:YAG, and co-doped Er,Ce:YAG. We find that co-doping of Ce-doped YAG with any lanthanide except Eu and Lu lowers the transition energies; we attribute this behavior to the lanthanide-induced change in bonding environment of the dopant atoms. Furthermore, we find infrared transitions only in case of the Er, Tb, and Tm co-doped Ce:YAG and suggest Tm,Ce:YAG and Tb,Ce:YAG as possible functional materials for efficient spectral up-conversion devices.

  2. Low-temperature growth and physical investigations of undoped and (In, Co) doped ZnO thin films sprayed on PEI flexible substrate

    NASA Astrophysics Data System (ADS)

    Ben Ameur, S.; Barhoumi, A.; Mimouni, R.; Amlouk, M.; Guermazi, H.

    2015-08-01

    ZnO thin films were deposited on polymer substrate Polyethyerimide (PEI) at 250 °C by spray pyrolysis technique. The effects of different doping elements (Co and In) on physical properties of ZnO thin films were investigated. Thin film characterizations were carried out using X-ray diffraction technique, UV-Vis-NIR spectroscopy, Photoluminescence (PL) spectroscopy and the contact angle measurement method. XRD measurement showed a successful growth of crystalline films on polymer substrate at low temperature by the spray pyrolysis process. XRD patterns revealed that all films consist of single ZnO phase and were well crystallized with preferential orientation towards (1 0 1) direction. Doping by cobalt has effective role in the enhancement of the crystalline quality, increases in the band gap according to Burstein Moss effect. Doping with indium leads rather to the decrease of both crystallinity and optical band gap energy value. Photoluminescence of the films showed UV emission (NBE) and visible emission related to defects. The contact angles were measured to study the effect of various doping elements on the hydrophobicity of the film depending on surface roughness. Results showed strong dependence on the doping element. In fact, doping with cobalt element increases the roughness of ZnO films and reinforces the surface from hydrophilic to hydrophobic (θ > 90°).

  3. Enhanced 2 μm broad-band emission and NIR to visible frequency up-conversion from Ho3+/Yb3+ co-doped Bi2O3-GeO2-ZnO glasses.

    PubMed

    Biswas, Kaushik; Sontakke, Atul D; Sen, R; Annapurna, K

    2013-08-01

    In this work, a new and non-conventional oxide glass composition based on Bi2O3-GeO2-ZnO system has been formulated with an aim to realize low phonon oxide glass and elucidate its performance when co-doped with Ho(3+)/Yb(3+) for the energy transfer based NIR emission at 2 μm from Ho(3+) ions under Yb(3+) excitation. The glass with 1.0 mol% Ho2O3 and 0.5 mol% Yb2O3 has exhibited maximum energy transfer rate (3602 s(-1)) and energy transfer efficiency (65.92%). Important radiative properties have been predicted for emission transitions of Ho(3+) ions using intensity parameters derived from measured absorption spectra using standard Judd-Ofelt theory. At lower acceptor ion concentration (0.1 mol%), an efficient NIR to visible up-conversion emission has been observed based on two photon absorption process which has found to be reduced significantly at higher Ho(3+) concentrations with simultaneous enhancement in 2 μm emission. Hence, this newly developed glass codoped with Yb(3+)/Ho(3+) is promising glass for sensitized 2 μm emission applications as broad band tunable lasers because of the combination of low phonon energy (707 cm(-1)), high energy transfer efficiency, moderately high emission cross-section (5.33×10(-21) cm(2)) and larger effective half-width of the emission band value of 169 nm.

  4. The effect of sulfur and zirconium Co-doping on the oxidation of NiCrAl

    NASA Technical Reports Server (NTRS)

    Smialek, James L.

    1987-01-01

    The adhesion behavior of Al2O3 scales formed on NiCrAl+Zr alloys was examined as a function of both sulfur and zirconium doping levels. In general, very high levels of zirconium were required to counteract the detrimental effects of sulfur. A sulfur-zirconium adherence map was constructed, as determined from the oxidation and spalling behavior in 1100 C cyclic tests. For low sulfur alloys, the amount of zirconium required for adherence at any given sulfur level can be described by Zr greater than 600 S sup 0.2 (in ppma). These results underscore the importance of sulfur to adhesion mechanisms and suggests that sulfur gettering is a first order effect of reactive element additions to MCrAl alloys.

  5. The effect of sulfur and zirconium co-doping on the oxidation of NiCrAl

    NASA Technical Reports Server (NTRS)

    Smialek, James L.

    1988-01-01

    The adhesion behavior of Al2O3 scales formed on NiCrAl+Zr alloys was examined as a function of both sulfur and zirconium doping levels. In general, very high levels of zirconium were required to counteract the detrimental effects of sulfur. A sulfur-zirconium adherence map was constructed, as determined from the oxidation and spalling behavior in 1100 C cyclic tests. For low sulfur alloys (less than 500 ppma), the amount of zirconium required for adherence at any given sulfur level can be described by Zr greater than 600 S(0.2) (in ppma). These results underscore the importance of sulfur to adhesion mechanisms and suggest that sulfur gettering is a first order effect of reactive element additions to MCrAl alloys.

  6. Effect of Al and Ca co-doping, in the presence of Te, in superconducting YBCO whiskers growth.

    PubMed

    Pascale, Lise; Truccato, Marco; Operti, Lorenza; Agostino, Angelo

    2016-10-01

    High-Tc superconducting cuprates (HTSC) such as YBa2Cu3O7 - x (YBCO) are promising candidates for solid-state THz applications based on stacks of intrinsic Josephson junctions (IJJs) with atomic thickness. In view of future exploitation of IJJs, high-quality superconducting YBCO tape-like single crystals (whiskers) have been synthesized from Ca-Al-doped precursors in the presence of Te. The main aim of this paper is to determine the importance of the simultaneous use of Al, Te and Ca in promoting YBCO whiskers growth with good superconducting properties (Tc = 79-84 K). Further, single-crystal X-ray diffraction (SC-XRD) refinements of tetragonal YBCO whiskers (P4/mmm) are reported to fill the literature lack of YBCO structure investigations. All the as-grown whiskers have also been investigated by means of X-ray powder diffraction (XRPD), scanning electron microscopy (SEM) and energy dispersive X-ray spectroscopy (EDS). Our results demonstrate that the interplay of Ca, Te and Al elements is clearly necessary in order to obtain superconducting YBCO whiskers. The data obtained from SC-XRD analyses confirm the highly crystalline nature of the whiskers grown. Ca and Al enter the structure by replacing the Y and the octahedral coordinated Cu1 site, respectively, as in other similar orthorhombic compounds, while Te does not enter the structure of whiskers but its presence in the precursor is essential to the growth of the crystals.

  7. Mg co-doping effects on Ce doped Y3(Ga,Al)5O12 scintillator

    NASA Astrophysics Data System (ADS)

    Kamada, Kei; Yamaji, Akihiro; Kurosawa, Shunsuke; Yokota, Yuui; Ohashi, Yuji; Yoshikawa, Akira

    2017-02-01

    Nonstoichiometric Lu3Al5+xO12 (x= 0.05, 0.15, 0.35, 0, -0.05, -0.15, -0.35) crystals were grown by the μ-PD method. Luminescence and scintillation properties such as absorption, excitation and emission spectra, light yield and decay time were evaluated. Expected anti-site defect related host emission have been observed in 250-420nm. Emission intensity was increased by increasing the nonstochiometry. The x=-0.35 sample showed the highest light yield of around 12000 photons/MeV and slowest scintillation decay time of 1.96μs.

  8. Energy transfer based photoluminescence spectra of co-doped (Dy3+ + Sm3+): Li2O-LiF-B2O3-ZnO glasses for orange emission

    NASA Astrophysics Data System (ADS)

    Vijayalakshmi, L.; Naveen Kumar, K.; Vijayalakshmi, R. P.

    2016-07-01

    The present paper brings out the results concerning the preparation and optical properties of Sm3+ and Dy3+ each ion separately in different concentrations (0.3, 0.5, 1.0 and 1.5 mol.%) and also together doped (x mol.% Dy3+ + 1.5 mol.% Sm3+): Li2O-LiF-B2O3-ZnO (where x = 0.5, 1.0 and 1.5 mol.%) glasses by a melt quenching method. Structural and thermal properties have been extensively studied for those glasses by XRD and TG/DTA. The compositional analysis has been carried out from FTIR spectral profile. Optical absorption spectral studies were also carried out. Sm3+: LBZ glasses have displayed an intense orange emission at 603 nm (4G5/2 → 6H7/2) with an excitation wavelength at 403 nm and Dy3+: LBZ glasses have shown two emissions located at 485 nm (4F9/2 → 6H15/2; blue) and 574 nm (4F9/2 → 6H13/2; yellow) with an excitation wavelength at 385 nm. Remarkably, it has been identified that the significant increase in the reddish orange emission of Sm3+ ions and diminished yellow emission pertaining to Dy3+ ions in the co-doped LBZ glass system under the excitation of 385 nm which relates to Dy3+ ions. This could be due energy transfer from Dy3+ to Sm3+. The non-radiative energy transfer from Dy3+ to Sm3+ is explained in terms of their emission spectra, donor lifetime, energy level diagram and energy transfer characteristic factors. These significantly enhanced orange emission exhibited glasses could be suggested as potential optical glasses for orange luminescence photonic devices.

  9. RETRACTED: P-type Zno thin films fabricated by Al-N co-doping method at different substrate temperature

    NASA Astrophysics Data System (ADS)

    Yuan, Guodong; Ye, Zhizhen; Qian, Qing; Zhu, Liping; Huang, Jingyun; Zhao, Binghui

    2005-01-01

    This article has been retracted at the request of the Editor-in-Chief. Please see Elsevier Policy on Article Withdrawal ( http://www.elsevier.com/locate/withdrawalpolicy). The editors and publisher would like to confirm the retraction of this paper at the request of the author Guodong Yuan. Reason: The SIMS profile published in this paper had already been included in articles published in Mater. Lett., 58 (2004) 3741-3744, and Thin Solid Films, 484 (2005) 420-425 describing a sample prepared under different conditions. The author did not notify either the Journal of Crystal Growth Editors or the coauthors of this fact. The author apologizes sincerely to the readers, referees, and Editors for violating the guidelines of ethical publication.Also the author apologizes to the coauthors for mishandling of the manuscript.

  10. Effect of Al and Fe doping in ZnO on magnetic and magneto-transport properties

    NASA Astrophysics Data System (ADS)

    Kumar, Santosh; Deepika; Tripathi, Malvika; Vaibhav, Pratyush; Kumar, Aman; Kumar, Ritesh; Choudhary, R. J.; Phase, D. M.

    2016-12-01

    The structural, magnetic and magneto-transport of undoped ZnO, Zn0.97Al0.03O, Zn0.95Fe0.05O and Zn0.92Al0.03Fe0.05O thin films grown on Si(100) substrate using pulsed laser deposition were investigated. The single phase nature of the films is confirmed by X-ray diffraction and Raman spectroscopy measurements. The possibility of Fe metal cluster in Fe doped/co-doped films is ruled out by Fe 2p core level photoelectron spectra. From O 1s core level spectra it is observed that oxygen vacancy is present in all the films. The undoped ZnO film shows magnetic ordering below ∼175 K, whereas Fe doped/codoped samples show magnetic ordering even at 300 K. The Al doped sample reveals paramagnetic behavior. The magneto-transport measurements suggest that the mobile carriers undergo exchange interaction with local magnetic moments.

  11. Facile synthesis of yellow-emitting CaAlSiN3:Ce3+ phosphors and the enhancement of red-component by co-doping Eu2+ ions

    NASA Astrophysics Data System (ADS)

    Chen, Jingjing; Zhao, Yang; Li, Guanghao; Mao, Zhiyong; Wang, Dajian; Bie, Lijian

    2017-04-01

    In this paper, facile synthesis of CaAlSiN3:Ce3+ yellow-emitting phosphors under atmospheric pressure at a moderate temperature and their photoluminescent properties are reported. The prepared CaAlSiN3:Ce3+ phosphors exhibit a broad yellow emission band positioned at 580 nm and covering a bandwidth of 150 nm. The thermal stability of CaAlSiN3:Ce3+ phosphors shows obvious superiority than the commercial YAG: Ce3+ phosphor, indicating its promising application prospect in power LEDs. In addition, the enhancement of red-light component for CaAlSiN3:Ce3+ phosphor is demonstrated by co-doping Eu2+ ions. This study offers a facile route to prepare CaAlSiN3:Ce3+ yellow-emitting phosphors, which may be used as a promising candidate for high performance white LEDs.

  12. Structural and photoluminescence properties of Cd and Cu co-doped zinc oxide nanoparticles

    NASA Astrophysics Data System (ADS)

    Samuel, T.; Sujatha, K.; Rao, K. Ramachandra; Rao, M. C.

    2016-05-01

    Cd and Cu co-doped ZnO nanoparticles were synthesized by Polyol method and subsequently have been characterized by their structure, optical and photoluminescence studies. XRD and PSA results revealed the formation of Cd and Cu co-doped ZnO nanoparticles with an average crystallite size of 50 nm and average particle size of 246 nm. From Zeta Potential measurements the Zeta Potential was found to be - 29.2 eV indicating the stability of prepared nanoparticles. From Uv-Vis studies, it is found that the absorption of undoped ZnO is less compared with Cd and Cu co-doped ZnO and the absorbance increases with increase in dopant concentration. Photoluminescence studies revealed that the samples are with high structural and optical quality.

  13. A clear effect of charge compensation through Na{sup +} co-doping on the luminescence spectra and decay kinetics of Nd{sup 3+}-doped CaAl{sub 4}O{sub 7}

    SciTech Connect

    Puchalska, M.; Watras, A.

    2016-06-15

    We present a detailed analysis of luminescence behavior of singly Nd{sup 3+} doped and Nd{sup 3+}, Na{sup +} co-doped calcium aluminates powders: Ca{sub 1−x}Nd{sub x}Al{sub 4}O{sub 7} and Ca{sub 1−2x}Nd{sub x}Na{sub x}Al{sub 4}O{sub 7} (x=0.001–0.1). Relatively intense Nd{sup 3+} luminescence in IR region corresponding to typical {sup 4}F{sub 3/2}→{sup 4}I{sub J} (J=9/2–13/2) transitions with maximum located at about 1079 nm was obtained in all samples on direct excitation into f–f levels. The effect of dopant concentration and charge compensation by co-doping with Na{sup +} ions on morphology and optical properties were studied. The results show that both, the Nd{sup 3+} concentration and the alkali metal co-doping affected the optical properties but had no influence on the powders morphology. The studies of luminescence spectra (298 and 77 K) in a function of dopant concentration showed an increasing distortion of the local symmetry of Nd{sup 3+}with raising activator content due to certain defects created in the crystal lattice. On the other hand Na{sup +} addition led to significant narrowing of absorption and luminescence bands and also a reduction of the number of their components, showing smaller disturbance of Nd{sup 3+} ions local symmetries. Consequently, charge compensated by Na{sup +} co-doping materials showed significantly enhanced Nd{sup 3+} luminescence. The decrease of emission intensity and luminescence lifetimes with increase of activator concentration was attributed mainly to phonon-assisted cross-relaxation processes between Nd{sup 3+} ions. Analysis with Inokuti–Hirayama model indicated dipole–dipole mechanism of ion-ion interaction. Na{sup +} addition led to much smaller concentration quenching due to smaller clustering of dopant ions in CaAl{sub 4}O{sub 7} lattice.

  14. Preparation, structural and optical characterization of ZnO, ZnO: Al nanopowder

    SciTech Connect

    Mohan, R. Raj; Rajendran, K.; Sambath, K.

    2014-01-28

    In this paper, ZnO and ZnO:Al nanopowders have been synthesized by low cost hydrothermal method. Zinc nitrate, hexamethylenetetramine (HMT) and aluminium nitrate are used as precursors for ZnO and AZO with different molar ratios. The structural and optical characterization of doped and un-doped ZnO powders have been investigated by X-ray diffraction (XRD), Scanning electron microscopy (SEM), Energy dispersive X-ray spectroscopy (EDAX), photoluminescence (PL) and ultra violet visible (UV-Vis) absorption studies. The SEM results show that the hydrothermal synthesis can be used to obtain nanoparticles with different morphology. It is observed that the grain size of the AZO nanoparticles increased with increasing of Al concentration. The PL measurement of AZO shows that broad range of green emission around 550nm with high intensity. The green emission resulted mainly because of intrinsic defects.

  15. Preparation, structural and optical characterization of ZnO, ZnO: Al nanopowder

    NASA Astrophysics Data System (ADS)

    Mohan, R. Raj; Rajendran, K.; Sambath, K.

    2014-01-01

    In this paper, ZnO and ZnO:Al nanopowders have been synthesized by low cost hydrothermal method. Zinc nitrate, hexamethylenetetramine (HMT) and aluminium nitrate are used as precursors for ZnO and AZO with different molar ratios. The structural and optical characterization of doped and un-doped ZnO powders have been investigated by X-ray diffraction (XRD), Scanning electron microscopy (SEM), Energy dispersive X-ray spectroscopy (EDAX), photoluminescence (PL) and ultra violet visible (UV-Vis) absorption studies. The SEM results show that the hydrothermal synthesis can be used to obtain nanoparticles with different morphology. It is observed that the grain size of the AZO nanoparticles increased with increasing of Al concentration. The PL measurement of AZO shows that broad range of green emission around 550nm with high intensity. The green emission resulted mainly because of intrinsic defects.

  16. Synthesis and down-conversion luminescence properties of Er3+/Yb3+ co-doped AlF3-PbF2-CaF2 powders

    NASA Astrophysics Data System (ADS)

    Liu, Fangchao; Han, Qun; Liu, Tiegen; Chen, Yaofei; Du, Yang; Yao, Yunzhi

    2015-08-01

    Er3+/Yb3+ co-doped oxy-fluoride powders with varying Er/Yb concentration were prepared by a melt quenching method at various sintering temperature. The effect of the Er/Yb doped concentration and sintering temperature were analyzed by using optical absorption and emission techniques. The Judd-Ofelt theory has been used to evaluate the three intensity parameters (Ωλ, where λ = 2, 4 and 6) and calculate the oscillator strengths (fc). Ultraviolet-to-visible emissions were observed under the excitation of a 325 nm CW laser. It was found that the down-conversion fluorescence intensity changes with the sintering temperature and Er/Yb content ratio, the results were explained with the level transitions in Er3+/Yb3+ co-doped systems. The intensity ratios (intensity of 437 nm as reference) of the luminescence spectra that the samples sintered at various temperature are relevant to Ω6 parameter which indicates the vibration amplitude of the Er-O distance. The sintering temperature also has an influence on the intensity ratios via affecting the thermalization of the excited 4I15/2 level.

  17. Semiconducting properties of Al doped ZnO thin films.

    PubMed

    Al-Ghamdi, Ahmed A; Al-Hartomy, Omar A; El Okr, M; Nawar, A M; El-Gazzar, S; El-Tantawy, Farid; Yakuphanoglu, F

    2014-10-15

    Aluminum doped ZnO (AZO) thin films were successfully deposited via spin coating technique onto glass substrates. Structural properties of the films were analyzed by X-ray diffraction, atomic force microscopy (AFM) and energy dispersive X-ray spectroscopy. X-ray diffraction results reveal that all the films are polycrystalline with a hexagonal wurtzite structure with a preferential orientation according to the direction (002) plane. The crystallite size of ZnO and AZO films was determined from Scherrer's formula and Williamson-Hall analysis. The lattice parameters of the AZO films were found to decrease with increasing Al content. Energy dispersive spectroscopy (EDX) results indicate that Zn, Al and O elements are present in the AZO thin films. The electrical conductivity, mobility carriers and carrier concentration of the films are increased with increasing Al doping concentration. The optical band gap (Eg) of the films is increased with increasing Al concentration. The AZO thin films indicate a high transparency in the visible region with an average value of 86%. These transparent AZO films may be open a new avenue for optoelectronic and photonic devices applications in near future.

  18. A brief review of co-doping

    NASA Astrophysics Data System (ADS)

    Zhang, Jingzhao; Tse, Kinfai; Wong, Manhoi; Zhang, Yiou; Zhu, Junyi

    2016-12-01

    Dopants and defects are important in semiconductor and magnetic devices. Strategies for controlling doping and defects have been the focus of semiconductor physics research during the past decades and remain critical even today. Co-doping is a promising strategy that can be used for effectively tuning the dopant populations, electronic properties, and magnetic properties. It can enhance the solubility of dopants and improve the stability of desired defects. During the past 20 years, significant experimental and theoretical efforts have been devoted to studying the characteristics of co-doping. In this article, we first review the historical development of co-doping. Then, we review a variety of research performed on co-doping, based on the compensating nature of co-dopants. Finally, we review the effects of contamination and surfactants that can explain the general mechanisms of co-doping.

  19. Novel red phosphors LaBSiO5 co-doped with Eu3+, Al3+ for near-UV light-emitting diodes

    NASA Astrophysics Data System (ADS)

    Wang, Zhengliang; Cheng, Ping; Liu, Yong; Zhou, Yayun; Zhou, Qiang; Guo, Junmin

    2014-11-01

    Red-emitting phosphors LaBSiO5:Eu3+ and LaBSiO5:Eu3+, Al3+ were synthesized by the conventional solid state method at 1100 °C. The structure and luminescent properties of these phosphors are investigated. LaBSiO5:Eu3+ and LaBSiO5:Eu3+, Al3+ could be efficiently excited by near ultraviolet light with the strongest excitation peak at 395 nm. The main emission peak is located at around 616 nm, which corresponds to the transition of 5D0 → 7F2 of Eu3+ ions. The emission intensity of LaBSiO5:Eu3+ was enhanced by introducing Al3+ ions. Compared with Y2O2S:0.05Eu3+, the sample La0.70B0.75SiO5:0.30Eu3+, 0.25Al3+ shares the intense red emission, and its emission intensity is about 3.8 times as strong as that of Y2O2S:0.05Eu3+ under 395 nm light excitation. Bright red light can be observed from the red LED based on La0.70B0.75SiO5:0.30Eu3+, 0.25Al3+, hence La0.70B0.75SiO5:0.30Eu3+, 0.25Al3+ maybe find application on near-UV InGaN-based white LEDs.

  20. Structural, optical and electronic structure studies of Al doped ZnO thin films

    NASA Astrophysics Data System (ADS)

    Devi, Vanita; Kumar, Manish; Shukla, D. K.; Choudhary, R. J.; Phase, D. M.; Kumar, Ravindra; Joshi, B. C.

    2015-07-01

    Structural, optical and electronic structure of Al doped ZnO thin films grown using pulsed laser deposition on glass substrate are investigated. X-ray diffraction measurements reveal that all the films are textured along the c-axis and have wurtzite structure. Al doping in ZnO films leads to increase in grain size due to relaxation in compressive stress. Enhancement in band gap of ZnO films with the Al doping is also noticed which can be ascribed to the Brustein-Moss shift. The changes in the electronic structure caused by Al in the doped thin film samples are understood through X-ray absorption measurements.

  1. Atomic layer deposition of Al-doped ZnO thin films

    SciTech Connect

    Tynell, Tommi; Yamauchi, Hisao; Karppinen, Maarit; Okazaki, Ryuji; Terasaki, Ichiro

    2013-01-15

    Atomic layer deposition has been used to fabricate thin films of aluminum-doped ZnO by depositing interspersed layers of ZnO and Al{sub 2}O{sub 3} on borosilicate glass substrates. The growth characteristics of the films have been investigated through x-ray diffraction, x-ray reflection, and x-ray fluorescence measurements, and the efficacy of the Al doping has been evaluated through optical reflectivity and Seebeck coefficient measurements. The Al doping is found to affect the carrier density of ZnO up to a nominal Al dopant content of 5 at. %. At nominal Al doping levels of 10 at. % and higher, the structure of the films is found to be strongly affected by the Al{sub 2}O{sub 3} phase and no further carrier doping of ZnO is observed.

  2. Al-doped ZnO seed layer-dependent crystallographic control of ZnO nanorods by using electrochemical deposition

    SciTech Connect

    Son, Hyo-Soo; Choi, Nak-Jung; Kim, Kyoung-Bo; Kim, Moojin; Lee, Sung-Nam

    2016-10-15

    Highlights: • Polar and semipolar ZnO NRs were successfully achieved by hydrothermal synthesis. • Semipolar and polar ZnO NRs were grown on ZnO and AZO/m-sapphire, respectively. • Al % of AZO/m-sapphire enhanced the lateral growth rate of polar ZnO NRs. - Abstract: We investigated the effect of an Al-doped ZnO film on the crystallographic direction of ZnO nanorods (NRs) using electrochemical deposition. From high-solution X-ray diffraction measurements, the crystallographic plane of ZnO NRs grown on (1 0 0) ZnO/m-plane sapphire was (1 0 1). The surface grain size of the (100) Al-doped ZnO (AZO) film decreased with increasing Al content in the ZnO seed layer, implying that the Al dopant accelerated the three-dimensional (3D) growth of the AZO film. In addition, it was found that with increasing Al doping concentration of the AZO seed layer, the crystal orientation of the ZnO NRs grown on the AZO seed layer changed from [1 0 1] to [0 0 1]. With increasing Al content of the nonpolar (1 0 0) AZO seed layer, the small surface grains with a few crystallographic planes of the AZO film changed from semipolar (1 0 1) ZnO NRs to polar (0 0 1) ZnO NRs due to the increase of the vertical [0 0 1] growth rate of the ZnO NRs owing to excellent electrical properties.

  3. Trap depth and color variation of Ce3+-Cr3+ co-doped Gd3(Al,Ga)5O12 garnet persistent phosphors

    NASA Astrophysics Data System (ADS)

    Asami, Kazuki; Ueda, Jumpei; Tanabe, Setsuhisa

    2016-12-01

    Persistent luminescent properties in Ce3+-Cr3+ codoped Gd3Al5-xGaxO12 garnet (GAGG:Ce-Cr) solid solution have been investigated. The persistent luminescent color is shifted from orange to yellowish green with increasing Ga content because Ce3+: 5d level splitting becomes much weaker. The depth of electron trap introduced by Cr codoping was estimated from the intense thermoluminescence glow peak by the initial rise method. The trap depth decreases from 0.56 eV to 0.29 eV with increasing Ga content. The shift can be explained by downshift of bottom of conduction band. From the persistent luminescence decay curve measurement after ceasing 450 nm blue illumination, the samples with x = 2.5 exhibited the longest persistent luminescence for 405 min until the luminance becomes 2 mcd/m2 in GAGG:Ce-Cr phosphors.

  4. Broadband down-conversion based near infrared quantum cutting in Eu{sup 2+}–Yb{sup 3+} co-doped SrAl{sub 2}O{sub 4} for crystalline silicon solar cells

    SciTech Connect

    Tai, Yuping; Zheng, Guojun; Wang, Hui; Bai, Jintao

    2015-03-15

    Near infrared (NIR) quantum cutting involving the down conversion of an absorbed visible photon to emission of two NIR photons was achieved in SrAl{sub 2}O{sub 4}:0.01Eu{sup 2+}, xYb{sup 3+} (x=0, 1, 2, 5, 10, 20, 30 mol%) samples. The photoluminescence properties of samples in visible and NIR regions were measured to verify the energy transfer (ET) from Eu{sup 2+} to Yb{sup 3+}. The results demonstrated that Eu{sup 2+} was an efficient sensitizer for Yb{sup 3+} in the SrAl{sub 2}O{sub 4} host lattice. According to Gaussian fitting analysis and temperature-dependent luminescence experiments, the conclusion was drawn that the cooperative energy transfer (CET) process dominated the ET process and the influence of charge transfer state (CTS) of Yb{sup 3+} could be negligible. As a result, the high energy transfer efficiency (ETE) and quantum yield (QY) have been acquired, the maximum value approached 73.68% and 147.36%, respectively. Therefore, this down-conversion material has potential application in crystalline silicon solar cells to improve conversion efficiency. - Graphical abstract: Near infrared quantum cutting was achieved in Eu{sup 2+}–Yb{sup 3+} co-doped SrAl{sub 2}O{sub 4} samples. The cooperative energy transfer process dominated energy transfer process and high energy transfer efficiency was acquired. - Highlights: • The absorption spectrum of Eu{sup 2+} ion is strong in intensity and broad in bandwidth. • The spectra of Eu{sup 2+} in SrAl{sub 2}O{sub 4} lies in the strongest region of solar spectrum. • The cooperative energy transfer (CET) dominated the energy transfer process. • The domination of CET is confirmed by experimental analysis. • SrAl{sub 2}O{sub 4}:Eu{sup 2+},Yb{sup 3+} show high energy transfer efficiency and long lifetime.

  5. Influence Al doped ZnO nanostructure on structural and optical properties

    NASA Astrophysics Data System (ADS)

    Ramelan, Ari Handono; Wahyuningsih, Sayekti; Chasanah, Uswatul; Munawaroh, Hanik

    2016-04-01

    The preparation of Al-doped ZnO (AZO) thin films prepared by the spin-coating method was reported. Preparation of AZO was conducted by annealing treatment at a temperature of 700°C. While the spin-coating process of AZO thin films were done at 2000 and 3000 rpm respectively. The structural properties of ZnO were determined by X- ray diffraction (XRD) analysis. ZnOnanostructure was formed after annealed at atemperature of 400°C.The morphology of ZnO was determined by Scanning Electron Microscopy (SEM) showed the irregular morphology about 30-50µm in size. Al doped on ZnO influenced the optical properties of those material. Increasing Al contain on ZnO cause of shifting to the lower wavelength. The optical properties of the ZnO as well as AZO films showed that higher reflectance on the ultraviolet region so those materials were used as anti-reflecting agent.Al addition significantly enhance the optical transparency and induce the blue-shift in optical bandgap of ZnO films.

  6. Structural defects and photoluminescence studies of sol-gel prepared ZnO and Al-doped ZnO films

    NASA Astrophysics Data System (ADS)

    Sandeep, K. M.; Bhat, Shreesha; Dharmaprakash, S. M.

    2016-11-01

    ZnO and Al-doped ZnO (AZO) films were synthesized using sol-gel spin-coating method. The powder XRD analysis revealed the stress relaxation mechanism upon Al doping in ZnO film. The reduction in the imaginary part of the dielectric constant and suppression of deep level acceptor type octahedral oxygen interstitial defects account for the reduction in carrier concentration in AZO with respect to ZnO. Electrical conductivity measurements and grain boundary conduction model are used to quantify the carrier concentration. From the Commission Internationale d'Eclairge diagram of ZnO and AZO, color parameters like dominant wavelength, color purity and luminosity are determined and reported for the first time. The prepared ZnO and AZO films show considerable blue emission. These films can be used for white light generation.

  7. WITHDRAWN: p-Type ZnO thin films fabricated by Al-N co-doping method at different substrate temperature

    NASA Astrophysics Data System (ADS)

    Yuan, Guodong; Ye, Zhizhen; Qian, Qing; Zhu, Liping; Huang, Jingyun; Zhao, Binghui

    2009-07-01

    This article has been retracted at the request of the Editor-in-Chief of the Journal of Crystal Growth. This article has been retracted; please see Elsevier Policy on Article Withdrawal: http://www.elsevier.com/locate/withdrawalpolicy.

  8. Thermoelectric properties of Al-doped ZnO: experiment and simulation

    NASA Astrophysics Data System (ADS)

    Jantrasee, S.; Moontragoon, P.; Pinitsoontorn, S.

    2016-09-01

    Advancement in doping other elements, such as Ce, Dy, Ni, Sb, In and Ga in ZnO[1], have stimulated great interest for high-temperature thermoelectric application. In this work, the effects of Al-doping in a ZnO system on the electronic structure and thermoelectric properties are presented, by experiment and calculation. Nanosized powders of Zn1-x Al x O (x = 0,0.01, 0.02, 0.03 and 0.06) were synthesized by hydrothermal method. From XRD results, all samples contain ZnO as the main phase and ZnAl2O4 (spinel phase) peaks were visible when Al additive concentrations were just 6 at%. The shape of the samples changed and the particle size decreased with increasing Al concentration. Seebeck coefficients, on the other hand, did not vary significantly. They were negative and the absolute values increased with temperature. However, the electrical resistivity decreased significantly for higher Al content. The electronic structure calculations were carried out using the open-source software package ABINIT[2], which is based on DFT. The energy band gap, density of states of Al-doped ZnO were investigated using PAW pseudopotential method within the LDA + U. The calculated density of states was then used in combination with the Boltzmann transport equation[3] to calculate the thermoelectric parameters of Al-doped ZnO. The electronic band structures showed that the position of the Fermi level of the doped sample was shifted upwards in comparison to the undoped one. After doping Al in ZnO, the energy band gap was decreased, Seebeck coefficient and electrical conductivity were increased. Finally, the calculated results were compared with the experimental results. The good agreement of thermoelectric properties between the calculation and the experimental results were obtained.

  9. Defect assisted saturable absorption characteristics in Al and Li doped ZnO thin films

    NASA Astrophysics Data System (ADS)

    K. M., Sandeep; Bhat, Shreesha; S. M., Dharmaprakash; P. S., Patil; Byrappa, K.

    2016-09-01

    The influence of different doping ratios of Al and Li on the nonlinear optical properties, namely, a two-photon absorption and a nonlinear refraction using single beam Z-scan technique, of nano-crystalline ZnO thin films has been investigated in the present study. A sol-gel spin-coated pure ZnO, Al-doped ZnO (AZO), and Li-doped ZnO (LZO) thin films have been prepared. The stoichiometric deviations induced by the occupancy of Al3+ and Li+ ions at the interstitial sites injects the compressive stress in the AZO and LZO thin films, respectively, while the extended defect states below the conduction band leads to a redshift of energy band gap in the corresponding films as compared to pure ZnO thin film. Switching from an induced absorption in ZnO and 1 at. wt. % doped AZO and LZO films to a saturable absorption (SA) in 2 at. wt. % doped AZO and LZO films has been observed, and it is attributed to the saturation of a linear absorption of the defect states. The closed aperture Z-scan technique revealed the self-focusing (a positive nonlinear refractive index) in all the films, which emerge out of the thermo-optical effects due to the continuous illumination of laser pulses. A higher third-order nonlinear optical susceptibility χ(3) of the order 10-3 esu has been observed in all the films.

  10. Magnetic interactions in the Zn-Co-O system: tuning local structure, valence and carrier type from extremely Co doped ZnO to ZnCo2O4

    PubMed Central

    Henne, Bastian; Ney, Verena; Ollefs, Katharina; Wilhelm, Fabrice; Rogalev, Andrei; Ney, Andreas

    2015-01-01

    We have investigated the relation between local structure, valence and carrier type with magnetism in the Zn-Co-O system. Thin films ranging from wurtzite Zn1−xCoxO (Co:ZnO) to ZnCo2O4 spinel were grown on c-sapphire substrates. On the one hand, the unprecedented doping of x = 0.6 Co in ZnO enables to study the structural and magnetic properties well-above the coalescence limit. On the other hand, the ZnCo2O4 spinel provides a p-type environment. We find a strong correlation between local structure, valence and carrier type throughout the Zn-Co-O system. In contrast to earlier publications neither 60% Co:ZnO nor ZnCo2O4 exhibit any sign of ferromagnetic order despite of the high concentration of magnetic ions and a p-type carrier background. Instead, antiferromagnetic exchange is found to be the predominant magnetic interaction in the Zn-Co-O system. PMID:26578268

  11. Polymer-assisted deposition of co-doped zinc oxide thin films for the detection of aromatic organic compounds.

    PubMed

    Li, Wei; Kim, Dojin

    2011-12-01

    Co-doped Zinc oxide thin films are deposited onto SiO2/Si substrate by polymer-assisted deposition method. The surface morphology, structures and chemical states of the thin films are examined by scanning electron microscopy, X-ray diffraction, and X-ray photoelectron spectroscopy. The gas-sensing properties of the thin films upon exposure to aromatic organic compound vapors are also investigated. Co-doping is shown to be very effective in enhancing the response of ZnO thin film to aromatic organic compound.

  12. Synthesis and conductivity enhancement of Al-doped ZnO nanorod array thin films.

    PubMed

    Hsu, Chih-Hsiung; Chen, Dong-Hwang

    2010-07-16

    Al-doped ZnO (AZO) nanorod array thin films with various Al/Zn molar ratios were synthesized by chemical bath deposition. The resultant AZO nanorods were well-aligned at the glass substrate, growing vertically along the c-axis [001] direction. In addition, they had an average diameter of 64.7 +/- 16.8 nm and an average length of about 1.0 microm with the structure of wurtzite-type ZnO. Analyses of energy dispersive x-ray spectra and x-ray photoelectron spectra indicated that Al atoms had been doped into the ZnO crystal lattice. The doping of Al atoms did not result in significant changes in the structure and crystal orientation, but the electrical resistivity was found to increase first and then decrease with increasing Al content owing to the increase of carrier concentration and the decrease of mobility. In addition, the transmission in the visible region increased but the increase was reduced at higher Al doping levels. After hydrogen treatment, the morphology of the AZO nanorod array thin films remained unchanged. However, the electrical resistivity decreased significantly due to the formation of oxygen vacancies and interstitial hydrogen atoms. When the real Al/Zn molar ratio was about 3.7%, the conductivity was enhanced about 1000 times and a minimum electrical resistivity of 6.4 x 10( - 4) Omega cm was obtained. In addition, the transmission of the ZnO nanorod array thin film in the visible region was significantly increased but the increase was less significant for the AZO nanorod array thin film, particularly at higher Al doping levels. In addition, the current-voltage curves of the thin film devices with ZnO or AZO nanorod arrays revealed that AZO had a higher current response than ZnO and hydrogen treatment led to a more significant enhancement of current responses (about 100-fold).

  13. Using the hydrothermal method to grow p-type ZnO nanowires on Al-doped ZnO thin film to fabricate a homojunction diode.

    PubMed

    Tseng, Yung-Kuan; Hung, Meng-Chun; Su, Shun-Lung; Li, Sheng-Kai

    2014-10-01

    In this study, the hydrothermal method is used to grow phosphorus-doped ZnO nanowires on Si/SiO2 substrates deposited with Al-doped ZnO thin film. This structure forms a homogeneous p-n junction. In this study, we are the pioneers to use ammonium hypophosphite (NH4H2PO2) as a source of phosphorus to prepare the precursor solution. Ammonium hypophosphite of different concentration levels is used to observe its effects on the growth of nanowires. The results show that the precursor solution prepared from ammonium hypophosphite can produce good crystalline ZnO nanowires while there is no linear relationship between the amounts and concentration levels of phosphorus doped into the nanowires. Whether the phosphorus-doped ZnO nanowires have the characteristics of a p-type semiconductor is indirectly verified by measuring whether the p-n junction made up of Al-doped ZnO thin film and phosphorus-doped ZnO nanowires shows rectifying behavior. I-V measurements are made on the specimens. The results show good rectifying behavior, proving that the phosphorus-doped ZnO nanowires and Al-doped AZO films have p-type and n-type semiconductor properties, constituting a good p-n junction. This result also proves that ammonium hypophosphite is a better source of phosphorus in the hydrothermal method to synthesize phosphorus-doped ZnO nanowires.

  14. Photoluminescence enhancement of ZnO via coupling with surface plasmons on Al thin films

    NASA Astrophysics Data System (ADS)

    Dellis, S.; Kalfagiannis, N.; Kassavetis, S.; Bazioti, C.; Dimitrakopulos, G. P.; Koutsogeorgis, D. C.; Patsalas, P.

    2017-03-01

    We present that the ultra-violet emission of ZnO can be enhanced, as much as six-times its integral intensity, using an Al thin interlayer film between the Si substrate and ZnO thin film and a post-fabrication laser annealing process. The laser annealing is a cold process that preserves the chemical state and integrity of the underlying aluminum layer, while it is essential for the improvement of the ZnO performance as a light emitter and leads to enhanced emission in the visible and in the ultraviolet spectral ranges. In all cases, the metal interlayer enhances the intensity of the emitted light, either through coupling of the surface plasmon that is excited at the Al/ZnO interface, in the case of light-emitting ZnO in the ultraviolet region, or by the increased back reflection from the Al layer, in the case of the visible emission. In order to evaluate the process and develop a solid understanding of the relevant physical phenomena, we investigated the effects of various metals as interlayers (Al, Ag, and Au), the metal interlayer thickness, and the incorporation of a dielectric spacer layer between Al and ZnO. Based on these experiments, Al emerged as the undisputable best choice of metal interlayers because of its compatibility with the laser annealing process, as well as due to its high optical reflectivity at 380 and 248 nm, which leads to the effective coupling with surface plasmons at the Al/ZnO interfaces at 380 nm and the secondary annealing of ZnO by the back-reflected 248 nm laser beam.

  15. Fabrication of highly transparent Al-ion-implanted ZnO thin films by metal vapor vacuum arc method

    NASA Astrophysics Data System (ADS)

    Lee, Han; Sivashanmugan, Kundan; Kao, Chi-Yuan; Liao, Jiunn-Der

    2017-03-01

    In this study, we utilized the metal vapor vacuum arc technique to implant vaporized aluminum (Al) ions in zinc oxide (ZnO) thin films. By adjusting the ion implantation dose and operational parameters, the conductivity and optical properties of the ZnO thin film can be controlled. The electrical sheet resistance of Al-ion-implanted ZnO decreased from 3.02 × 107 to 3.03 × 104 Ω/sq, while the transparency of the film was mostly preserved (91.5% at a wavelength of 550 nm). The ZnO thin-film Young’s modulus significantly increased with increasing Al ion dose.

  16. Electron transport in Al-doped ZnO nanolayers obtained by atomic layer deposition

    NASA Astrophysics Data System (ADS)

    Blagoev, B. S.; Dimitrov, D. Z.; Mehandzhiev, V. B.; Kovacheva, D.; Terziyska, P.; Pavlic, J.; Lovchinov, K.; Mateev, E.; Leclercq, J.; Sveshtarov, P.

    2016-03-01

    Al-doped ZnO thin films with different Al content were prepared by atomic layer deposition (ALD). To carry out thermal ALD, diethyl zinc (DEZ) and tri-methyl aluminium (TMA) were used as Zn and Al precursors, respectively, and water vapor as oxidant. Various numbers n of DEZ and m TMA cycles was used to obtain different [ZnO] n [Al2O3] m films, where n = 100 - 95, m = 1 - 5. The X-ray diffraction analysis showed a predominantly (100) oriented polycrystalline phase for the ZnO:Al films with a low Al content (m = 1 - 3) and an amorphous structure for pure Al2O3. In ZnO:Al with a higher Al content (m = 4 - 6) the (100) reflection disappeared and the (002) peak increased. The resistivity of the films decreased with the increase in the Al content, reaching a minimum of 3.3×10-3 Ω cm at about 1.1 % Al2O3 for the [ZnO]99[Al2O3]2 sample; for higher dopant concentrations, the resistivity increased because of the increased crystal inhomogeneity due to axis reorientation.

  17. Nitrogen and cobalt co-doped zinc oxide nanowires - Viable photoanodes for hydrogen generation via photoelectrochemical water splitting

    NASA Astrophysics Data System (ADS)

    Patel, Prasad Prakash; Hanumantha, Prashanth Jampani; Velikokhatnyi, Oleg I.; Datta, Moni Kanchan; Hong, Daeho; Gattu, Bharat; Poston, James A.; Manivannan, Ayyakkannu; Kumta, Prashant N.

    2015-12-01

    Photoelectrochemical (PEC) water splitting has been considered as a promising and environmentally benign approach for efficient and economic hydrogen generation by utilization of solar energy. Development of semiconductor materials with low band gap, high photoelectrochemical activity and stability has been of particular interest for a viable PEC water splitting system. In this study, Co doped ZnO, .i.e., (Zn0.95Co0.05)O nanowires (NWs) was selected as the composition for further co-doping with nitrogen by comparing solar to hydrogen efficiency (SHE) of ZnO NWs with that of various compositions of (Zn1-xCox)O NWs (x = 0, 0.05, 0.1). Furthermore, nanostructured vertically aligned Co and N-doped ZnO, .i.e., (Zn1-xCox)O:N NWs (x = 0.05) have been studied as photoanodes for PEC water splitting. An optimal SHE of 1.39% the highest reported so far to the best of our knowledge for ZnO based photoanodes was obtained for the co-doped NWs, (Zn0.95Co0.05)O:N - 600 NWs generated at 600 °C in ammonia atmosphere. Further, (Zn0.95Co0.05)O:N-600 NWs exhibited excellent photoelectrochemical stability under illumination compared to pure ZnO NWs. These promising results suggest the potential of (Zn0.95Co0.05)O:N-600 NWs as a viable photoanode in PEC water splitting cell. Additionally, theoretical first principles study conducted explains the beneficial effects of Co and N co-doping on both, the electronic structure and the band gap of ZnO.

  18. Structural and Magnetic Studies of Zn0.95Co0.05O and Zn0.90Co0.05Al0.05O

    NASA Astrophysics Data System (ADS)

    Murtaza, Saleem; Saadat, A. Siddiqi; Shahid, Atiq; M. Sabieh, Anwar

    2011-11-01

    Single-phase Zn0.95Co0.05O and Zn0.90Co0.05Al0.05O samples were prepared by a novel combustion method. X-ray diffraction studies exhibit the pure phase wurtzite structure of doped ZnO. Energy dispersive x-ray analysis confirms the incorporation of dopants into the host material. Scanning electron microscopy shows the ordered morphology in both of the samples. Temperature-dependent resistivity analysis describes the expected semiconducting behavior that is similar to the parent ZnO materials. Room-temperature magnetic measurements reveal the absence of ferromagnetism in Co-doped ZnO, while the Co and Al co-doped sample displays apparent room-temperature ferromagnetic behavior. The decrease of resistivity and presence of ferromagnetic behavior in Al-doped ZnCoO system corroborate the significant role of free carriers.

  19. Electrical transport in hydrogen-aluminium Co-doped ZnO and Zn{sub 1-x}Mg{sub x}O films: Relation to film structure and composition

    SciTech Connect

    Bikowski, A.; Ellmer, K.

    2013-02-07

    ZnO:Al and Zn{sub 1-x}Mg{sub x}O:Al films have been deposited in Ar/H{sub 2} atmospheres by magnetron sputtering from oxidic targets at two substrate temperatures: room temperature and 300 Degree-Sign C. The electrical transport parameters-carrier concentration, resistivity, and Hall mobility-have been measured and related to the structural properties and the chemical composition. The resistivity {rho} both of ZnO:Al as well as Zn{sub 1-x}Mg{sub x}O:Al films decreases with increasing hydrogen flow for the films deposited at room temperature. The decrease is up to 2 orders of magnitude and in both cases due to an increase of the electron concentration and the Hall mobility and occurred despite the fact, that the films became almost X-ray amorphous with increasing hydrogen content. In contrast to these results, for depositions at 300 Degree-Sign C, the resistivity increases with increasing hydrogen portion in the sputtering atmosphere, more strongly for the Zn{sub 1-x}Mg{sub x}O:Al films (3 orders of magnitude). Based on literature data, it is concluded that the built-in atomic hydrogen acts as a shallow donor at low deposition temperatures, while it becomes deactivated at T{sub sub}= 300 Degree-Sign C by the formation of molecular H{sub 2}.

  20. Photoluminescence lifetime of Al-doped ZnO films in visible region

    NASA Astrophysics Data System (ADS)

    Sharma, Bhupendra K.; Khare, Neeraj; Haranath, D.

    2010-12-01

    ZnO and Al-doped ZnO films have been deposited on quartz substrates by ultrasonically assisted chemical vapor deposition technique. Photoluminescence (PL) spectra of the films reveal that Al doping leads to suppression of defect related visible band. Time resolved photoluminescence studies have been carried out for the measurement of lifetime of deep level luminescence. The decay of PL intensity with time has been found to follow biexponential behavior. The relative contributions of fast decay component (τ1) and slow decay component (τ2) in total decay process are found to be ˜99% and ˜1% respectively. The values of τ1 and τ2 are found to decrease with Al doping in ZnO film. The decrease of both τ1 and τ2 is attributed to increase in non-radiative recombination due to reduction in grain sizes and the decrease in radiative recombination due to suppression of defects.

  1. Gas sensing properties of Al-doped ZnO for UV-activated CO detection

    NASA Astrophysics Data System (ADS)

    Dhahri, R.; Hjiri, M.; El Mir, L.; Bonavita, A.; Iannazzo, D.; Latino, M.; Donato, N.; Leonardi, S. G.; Neri, G.

    2016-04-01

    Al-doped ZnO (AZO) samples were prepared using a modified sol-gel route and charaterized by means of trasmission electron microscopy, x-ray diffraction and photoluminescence analysis. Resistive planar devices based on thick films of AZO deposited on interdigitated alumina substrates were fabricated and investigated as UV light activated CO sensors. CO sensing tests were performed in both dark and illumination condition by exposing the samples to UV radiation (λ  =  400 nm).Under UV light, Al-doped ZnO gas sensors operated at lower temperature than in dark. Furthermore, by photoactivation we also promoted CO sensitivity and made signal recovery of AZO sensors faster. Results demonstrate that Al-doped ZnO might be a promising sensing material for the detection of CO under UV illumination.

  2. Tailoring Energy Bandgap of Al Doped ZnO Thin Films Grown by Vacuum Thermal Evaporation Method.

    PubMed

    Vyas, Sumit; Singh, Shaivalini; Chakrabarti, P

    2015-12-01

    The paper presents the results of our experimental investigation pertaining to tailoring of energy bandgap and other associated characteristics of undoped and Al doped ZnO (AZO) thin film by varying the atomic concentration of Al in ZnO. Thin films of ZnO and ZnO doped with Al (1, 3, and 5 atomic percent (at.%)) were deposited on silicon substrate for structural characterization and on glass substrate for optical characterization. The dependence of structural and optical properties of Al doped ZnO on the atomic concentration of Al added to ZnO has been reported. On the basis of the experimental results an empirical formula has been proposed to calculate the energy bandgap of AZO theoretically in the range of 1 to 5 at.% of Al. The study revealed that AZO films are composed of smaller and larger number of grains as compared to pure ZnO counterpart and density of the grains was found to increase as the Al concentration increased (from 1 to 5 at.%). The transmittance in the visible region was greater than 90% and found to increase with increasing Al concentration up to 5 at.%. The optical bandgap was found to increase initially with increase in atomic concentration of Al concentration up to 3 at.% and decrease thereafter with increasing concentration of Al.

  3. Growth of Polarity-Controlled ZnO Films on (0001) Al2O3

    NASA Astrophysics Data System (ADS)

    Park, J. S.; Chang, J. H.; Minegishi, T.; Lee, H. J.; Park, S. H.; Im, I. H.; Hanada, T.; Hong, S. K.; Cho, M. W.; Yao, T.

    2008-05-01

    The polarity control of ZnO films grown on (0001) Al2O3 substrates by plasma-assisted molecular-beam epitaxy (P-MBE) was achieved by using a novel CrN buffer layer. Zn-polar ZnO films were obtained by using a Zn-terminated CrN buffer layer, while O-polar ZnO films were achieved by using a Cr2O3 layer formed by O-plasma exposure of a CrN layer. The mechanism of polarity control was proposed. Optical and structural quality of ZnO films was characterized by high-resolution X-ray diffraction and photoluminescence (PL) spectroscopy. Low-temperature PL spectra of Zn-polar and O-polar samples show dominant bound exciton (I8) and strong free exciton emissions. Finally, one-dimensional periodic structures consisting of Zn-polar and O-polar ZnO films were simultaneously grown on the same substrate. The periodic inversion of polarity was confirmed in terms of growth rate, surface morphology, and piezo response microscopy (PRM) measurement.

  4. Ferromagnetic behavior due to Al3+ doping into ZnO nanorods

    NASA Astrophysics Data System (ADS)

    Yingsamphancharoen, T.; Nakarungsee, P.; Herng, T. S.; Ding, J.; Tang, I. M.; Thongmee, S.

    2016-12-01

    Al doped ZnO nanorods (NR's) having Al concentration up to 10 mol% were grown by the hydrothermal method. XRD measurements showed that the Al substituted ZnO NR's maintained the hexagonal wurtzite structure for all levels of Al substitution. EDX measurements of the ZnO:Al NR's indicated that the Al substitution created additional Zn vacancies in the wurtzite structure which is reflected in the enhanced photoluminescence emission in the visible light spectra between 450 and 550 nm of the more heavily doped ZnO:Al NR's. SEM images of the heavier doped ZnO:Al nanorods showed nano nodules being formed on the surface of the hexagonal shaped NR's. The saturation magnetizations of the ZnO:Al NR's as measured by a SQUID magnetometer increased to 10.66×10-4 emu/g as more Al was substituted in. The hysteresis loops for the ZnO:Al NR's began to exhibit novel effects, such as horizontal shift (exchange bias field 0.0382 kOe for the 9 mol% NR) and butterfly shapes.

  5. Magnetic properties of Co-doped ZnO nanoparticles

    NASA Astrophysics Data System (ADS)

    Franco, A.; Pessoni, H. V. S.; Ribeiro, P. R. T.; Machado, F. L. A.

    2017-03-01

    The magnetism in nanoparticulate powders of Zn1-xCoxO with 0 ≤ x ≤ 0.09 synthesized by a combustion reaction technique is investigated in a broad range of temperatures (5 ≤T ≤ 750K) for applied magnetic fields up to 85 kOe. The hysteresis loops indicated the presence of both ferromagnetic and paramagnetic ordering at room temperature. An additional antiferromagnetic phase was observed for temperatures below 260 K . A particle model that can account for the results is that the some of doping Co2+ ions are not interagent among themselves, a small quantity form clusters, leading to the ferromagnetic ordering with some of the particles in the superparamagnetic state, and few others Co2+ ions form CoO at the grain boundary yielding the antiferromagnetic phase. It was also found that a modified Langevin function can be used for describing the H - dependence for magnetization data.

  6. Synthesis and Characterization of Al doped ZnO (AZO) by Sol-gel Method

    NASA Astrophysics Data System (ADS)

    Munawaroh, H.; Wahyuningsih, S.; Ramelan, A. H.

    2017-02-01

    Al doped ZnO (AZO) nanoparticles have been successfully synthesized by the simple sol-gel method. The starting materials of Al doped ZnO were Zn(CH3COO)2·2H2O and Al(OH)(CH3COO)2. Preparation of AZO using polyethylene glycol as a surfactant. The solution of precursors was stirred at 60 °C for 2 hour in the conditions of Al contents are 0%, 2%, 3% and 4% (g/mL), respectivelly. In the last step reaction, gelation occurred from solution to sol gel. The sol gel then were dried at 60 °C following by annealing process for crystalization. By this simple sol gel method, the nanoparticles have been produced. The characterizations were conducted X-Ray Diffraction (XRD), Scanning Electron Microscopy (SEM), Fourrier Transform Infra-Red (FTIR) and X-Ray Fluorescence (XRF). XRD analysis reveals that all samples has crystallizes in polycrystalline nature and exhibit no other impurity phase. The variation of Al doped ZnO slighly affect the crystallinity and crystal size. Both crystallinity and crystal size decrease with increasing of Al content in AZO. Morphology of AZO shown the particle distribution more equitable with increased Al content. The synthesized AZO gaved shift peak absorption of asymetric and symetric vibrations of Zn-O-Zn around wavelengths of 680 cm-1 and 1630 cm-1 atributed of the uptake of the Al-O-Al bond instead Zn-O-Zn. XRF analysis shown that the increase ratio of Al entering into Zn influenced the Al dopant concentration.

  7. Characterization and Fabrication of ZnO Nanowires Grown on AlN Thin Film

    SciTech Connect

    Yousefi, Ramin; Kamaluddin, Burhanuddin; Ghoranneviss, Mahmood; Hajakbari, Fatemeh

    2009-07-07

    In this paper, we report ZnO nanowires grown on AlN thin film deposited on glass as substrate by physical vapour deposition. The temperature of substrates was kept between 600 deg. C and 500 deg. C during the growth. The typical average diameters of the obtained nanowires on substrate at 600 deg. C and 500 deg. C was about 57 nm and 22 nm, respectively with several micrometers in lengths. X-ray diffraction and Auger spectroscopy results showed Al diffused from AlN thin film into ZnO nanowires for sample at high temperature zone. In the photoluminescence spectra two emission bands appeared, one related to ultraviolet emission with a strong peak at 380-382 nm, and another related to deep level emission with a weak peak at 510 nm.

  8. Structural and optical properties of pure and Al doped ZnO nanocrystals

    NASA Astrophysics Data System (ADS)

    Ghosh, A.; Kumari, N.; Tewari, S.; Bhattacharjee, A.

    2013-11-01

    Pure and Al doped zinc oxide (ZnO) were prepared by co-precipitation method. The dopant concentration [Al/Zn in atomic percentage (wt%)] was varied from 0 to 3 wt%. Structural characterisation of the samples performed with XRD and SEM-EDAX confirmed that polycrystalline nature of samples containing ZnO nanoparticles of size in the range of 97-47 nm. UV-Vis studies showed that the absorbance peaks, observed in the wavelength range of 800-250 nm, decreased with the increase in dopant concentration indicating widening of the band gap. The calculations of band gap (analyzed in terms of Burstein-Moss shift) from the reflectance showed an increase from 3.37 to 3.49 eV with increasing Al concentration.

  9. Dilute Magnetic Semiconductors from Electrodeposited ZnO Nanowires

    SciTech Connect

    Athavan, Nadarajah; Konenkamp, R.

    2011-02-02

    We present experimental results on the magnetic properties of doped ZnO nanowires grown at 80 8C in electrodeposition. We show that impurities such as Al, Mn, Co, and Cu can be incorporated in the nanowires by adding the corresponding metal salts to the electrolyte solution. At concentration levels of a few atomic percent we find the impurity concentration in the solid to be approximately proportional to the precursor concentration in solution. ZnO nanowrires doped with Cu, Co, and Mn show superparamagnetic response at room temperature, while undoped and Al-doped wires show no discernible magnetic response. The results indicate that with Cu, Mn, and Co doping dilute magnetic semiconductors can be prepared.

  10. Origins of low resistivity in Al ion-implanted ZnO bulk single crystals

    SciTech Connect

    Oga, T.; Izawa, Y.; Kuriyama, K.; Kushida, K.; Kinomura, A.

    2011-06-15

    The origins of low resistivity in Al ion-implanted ZnO bulk single crystals are studied by combining Rutherford backscattering spectroscopy (RBS), nuclear reaction analysis (NRA), photoluminescence (PL), and Van der Pauw methods. The Al-ion implantation (peak concentration: 2.6 x 10{sup 20}cm{sup -3}) into ZnO is performed using a multiple-step energy. The resistivity decreases from {approx}10{sup 4{Omega}} cm for un-implanted ZnO to 1.4 x 10{sup -1{Omega}} cm for as-implanted, and reaches 6.0 x 10{sup -4{Omega}} cm for samples annealed at 1000 deg. C. RBS and NRA measurements for as-implanted ZnO suggest the existence of the lattice displacement of Zn (Zn{sub i}) and O (O{sub i}), respectively. After annealing at 1000 deg. C, the Zn{sub i} related defects remain and the O{sub i} related defects disappear. The origin of the low resistivity in the as-implanted sample is attributed to the Zn{sub i} ({approx}30 meV [Look et al., Phys. Rev. Lett. 82, 2552 (1999)]). In contrast, the origin of the low resistivity in the sample annealed at 1000 deg. C is assigned to both of the Zn{sub i} related defects and the electrically activated Al donor. A new PL emission appears at around 3.32 eV after annealing at 1000 deg. C, suggesting electrically activated Al donors.

  11. Plasmonic enhancement of UV emission from ZnO thin films induced by Al nano-concave arrays

    NASA Astrophysics Data System (ADS)

    Norek, Małgorzata; Łuka, Grzegorz; Włodarski, Maksymilian

    2016-10-01

    Surface plasmons (SPs) supported by Al nano-concave arrays with increasing interpore distance (Dc) were used to enhance the ultraviolet light emission from ZnO thin films. Two sets of samples were prepared: in the first set the thin ZnO films were deposited directly on Al nanoconcaves (the Al/ZnO samples) and in the second set a 10 nm - Al2O3 spacer was placed between the textured Al and the ZnO films (the Al/Al2O3-ALD/ZnO samples). In the Al/ZnO samples the enhancement was limited by a nonradiative energy dissipation due to the Ohmic loss in the Al metal. However, for the ZnO layer deposited directly on Al nanopits synthesized at 150 V (Dc = 333 ± 18 nm), the largest 9-fold enhancement was obtained by achieving the best energy fit between the near band-edge (NBE) emission from ZnO and the λ(0,1) SPP resonance mode. In the Al/Al2O3-ALD/ZnO samples the amplification of the UV emission was smaller than in the Al/ZnO samples due to a big energy mismatch between the NBE emission and the λ(0,1) plasmonic mode. The results obtained in this work indicate that better tuning of the NBE - λ(0,1) SPP resonance mode coupling is possible through a proper modification of geometrical parameters in the Al/Al2O3-ALD/ZnO system such as Al nano-concave spacing and the thickness of the corresponding layer. This approach will reduce the negative influence of the non-radiative plasmonic modes and most likely will lead to further enhancement of the SP-modulated UV emission from ZnO thin films.

  12. Fabrication and characterization of silicon wire solar cells having ZnO nanorod antireflection coating on Al-doped ZnO seed layer

    PubMed Central

    2012-01-01

    In this study, we have fabricated and characterized the silicon [Si] wire solar cells with conformal ZnO nanorod antireflection coating [ARC] grown on a Al-doped ZnO [AZO] seed layer. Vertically aligned Si wire arrays were fabricated by electrochemical etching and, the p-n junction was prepared by spin-on dopant diffusion method. Hydrothermal growth of the ZnO nanorods was followed by AZO film deposition on high aspect ratio Si microwire arrays by atomic layer deposition [ALD]. The introduction of an ALD-deposited AZO film on Si wire arrays not only helps to create the ZnO nanorod arrays, but also has a strong impact on the reduction of surface recombination. The reflectance spectra show that ZnO nanorods were used as an efficient ARC to enhance light absorption by multiple scattering. Also, from the current-voltage results, we found that the combination of the AZO film and ZnO nanorods on Si wire solar cells leads to an increased power conversion efficiency by more than 27% compared to the cells without it. PMID:22222067

  13. Fabrication and characterization of silicon wire solar cells having ZnO nanorod antireflection coating on Al-doped ZnO seed layer.

    PubMed

    Baek, Seong-Ho; Noh, Bum-Young; Park, Il-Kyu; Kim, Jae Hyun

    2012-01-05

    In this study, we have fabricated and characterized the silicon [Si] wire solar cells with conformal ZnO nanorod antireflection coating [ARC] grown on a Al-doped ZnO [AZO] seed layer. Vertically aligned Si wire arrays were fabricated by electrochemical etching and, the p-n junction was prepared by spin-on dopant diffusion method. Hydrothermal growth of the ZnO nanorods was followed by AZO film deposition on high aspect ratio Si microwire arrays by atomic layer deposition [ALD]. The introduction of an ALD-deposited AZO film on Si wire arrays not only helps to create the ZnO nanorod arrays, but also has a strong impact on the reduction of surface recombination. The reflectance spectra show that ZnO nanorods were used as an efficient ARC to enhance light absorption by multiple scattering. Also, from the current-voltage results, we found that the combination of the AZO film and ZnO nanorods on Si wire solar cells leads to an increased power conversion efficiency by more than 27% compared to the cells without it.

  14. Plasma versus thermal annealing for the Au-catalyst growth of ZnO nanocones and nanowires on Al-doped ZnO buffer layers

    NASA Astrophysics Data System (ADS)

    Güell, Frank; Martínez-Alanis, Paulina R.; Roso, Sergio; Salas-Pérez, Carlos I.; García-Sánchez, Mario F.; Santana, Guillermo; Marel Monroy, B.

    2016-06-01

    We successfully synthesized ZnO nanocones and nanowires over polycrystalline Al-doped ZnO (AZO) buffer layers on fused silica substrates by a vapor-transport process using Au-catalyst thin films. Different Au film thicknesses were thermal or plasma annealed in order to analyze their influence on the ZnO nanostructure growth morphology. Striking differences have been observed. Thermal annealing generates a distribution of Au nanoclusters and plasma annealing induces a fragmentation of the Au thin films. While ZnO nanowires are found in the thermal-annealed samples, ZnO nanocones and nanowires have been obtained on the plasma-annealed samples. Enhancement of the preferred c-axis (0001) growth orientation was demonstrated by x-ray diffraction when the ZnO nanocones and nanowires have been grown over the AZO buffer layer. The transmittance spectra of the ZnO nanocones and nanowires show a gradual increase from 375 to 900 nm, and photoluminescence characterization pointed out high concentration of defects leading to observation of a broad emission band in the visible range from 420 to 800 nm. The maximum emission intensity peak position of the broad visible band is related to the thickness of the Au-catalyst for the thermal-annealed samples and to the plasma power for the plasma-annealed samples. Finally, we proposed a model for the plasma versus thermal annealing of the Au-catalyst for the growth of the ZnO nanocones and nanowires. These results are promising for renewable energy applications, in particular for its potential application in solar cells.

  15. Structural characterization and magnetic properties of Co co-doped Ni/ZnO nanoparticles

    NASA Astrophysics Data System (ADS)

    Vijayaprasath, G.; Murugan, R.; Asaithambi, S.; Babu, G. Anandha; Sakthivel, P.; Mahalingam, T.; Hayakawa, Y.; Ravi, G.

    2016-02-01

    In this paper, we present the structural, morphological, optical and magnetic properties of Zn1- x A x O ( A = Ni, Co and x = 0.20 mol%) and Zn0.80Ni0.10Co0.10O nanoparticles synthesized by a chemical co-precipitation method. Powder X-ray diffraction data confirm the formation of a single-phase wurtzite-type ZnO structure for all the samples. FTIR and EDS measurements ensure that the divalent Ni and Co ions are incorporated in the wurtzite host matrix without any impurity phase. Photoluminescence and Raman spectra indicate the presence of donor defects and oxygen vacancies in the prepared samples. In VSM analysis, undoped ZnO nanoparticles exhibit diamagnetic behavior at room temperature. A systematic increase in ferromagnetic moment (~0.70 emu/g) is observed for Ni-, Co-doped and Co co-doped Ni/ZnO at 300 K. The exchange interaction between delocalized carriers and the localized `d' spins of Ni and Co ions is predicted as the cause of the room temperature ferromagnetism.

  16. Electrical and optical properties of Al-doped ZnO and ZnAl2O4 films prepared by atomic layer deposition

    PubMed Central

    2013-01-01

    ZnO/Al2O3 multilayers were prepared by alternating atomic layer deposition (ALD) at 150°C using diethylzinc, trimethylaluminum, and water. The growth process, crystallinity, and electrical and optical properties of the multilayers were studied with a variety of the cycle ratios of ZnO and Al2O3 sublayers. Transparent conductive Al-doped ZnO films were prepared with the minimum resistivity of 2.4 × 10−3 Ω·cm at a low Al doping concentration of 2.26%. Photoluminescence spectroscopy in conjunction with X-ray diffraction analysis revealed that the thickness of ZnO sublayers plays an important role on the priority for selective crystallization of ZnAl2O4 and ZnO phases during high-temperature annealing ZnO/Al2O3 multilayers. It was found that pure ZnAl2O4 film was synthesized by annealing the specific composite film containing alternative monocycle of ZnO and Al2O3 sublayers, which could only be deposited precisely by utilizing ALD technology. PMID:23537274

  17. Atomic scattering spectroscopy for determination of the polarity of semipolar AlN grown on ZnO

    SciTech Connect

    Kobayashi, Atsushi; Ohta, Jitsuo; Ueno, Kohei; Oshima, Masaharu; Fujioka, Hiroshi

    2013-11-04

    Determination of the polarity of insulating semipolar AlN layers was achieved via atomic scattering spectroscopy. The back scattering of neutralized He atoms on AlN surfaces revealed the atomic alignment of the topmost layers of semipolar AlN and the ZnO substrate. Pole figures of the scattering intensity were used to readily determine the polarity of these wurtzite-type semipolar materials. In addition, we found that +R-plane AlN epitaxially grows on −R-plane ZnO, indicating that the polarity flips at the semipolar AlN/ZnO interface. This polarity flipping is possibly explained by the appearance of −c and m-faces on the −R ZnO surfaces, which was also revealed by atomic scattering spectroscopy.

  18. Spectroscopic characterization of the plasmas formed during the deposition of ZnO and Al-doped ZnO films by plasma-assisted pulsed laser deposition

    NASA Astrophysics Data System (ADS)

    Liang, Peipei; Cai, Hua; Yang, Xu; Li, Hui; Zhang, Wu; Xu, Ning; Sun, Jian; Wu, Jiada

    2016-11-01

    An oxygen-zinc plasma and an oxygen-zinc-aluminum plasma are formed by pulsed laser ablation of a Zn target or pulsed laser co-ablation of a Zn target and an Al target in an electron cyclotron resonance (ECR) discharge-generated oxygen plasma for the deposition of ZnO and Al-doped ZnO (AZO) films. The plasmas are characterized spectroscopically by time-integrated and time-resolved optical emission spectroscopy. Both the oxygen-zinc plasma and the oxygen-zinc-aluminum plasma contain excited species originally present in the working O2 gas and energetic species ablated from the targets. The optical emission of the oxygen-zinc-aluminum plasma is abundant in the emission bands of oxygen molecular ions and the emission lines of mono-atomic oxygen, zinc and aluminum atoms and atomic ions. The time-integrated spectra as well as the time-resolved spectra of the plasma emission indicate that the oxygen species in the ECR oxygen plasma experience additional excitation by the expanding ablation plumes, and the ablated species are excited frequently when traveling accompanying the plume expansion in the oxygen plasma, making the formed plasma highly excited and very reactive, which plays an important role in the reactive growth of ZnO matrix and the in-situ doping of Al into the growing ZnO matrix. The deposited ZnO and AZO films were evaluated for composition analysis by energy dispersive X-ray spectroscopy, structure characterization by X-ray diffraction and optical transmission measurement. The deposited ZnO is slightly rich in O. The Al concentration of the AZO films can be controlled and varied simply by changing the repetition rate of the laser used for Al target ablation. Both the ZnO and the AZO films are featured with hexagonal wurtzite crystal structure and exhibit high optical transparency in a wide spectral region. Al doping results in an improvement in the ultraviolet transparency, a blue shift in the absorption edge and a widening of the band gap.

  19. Effect of annealing on structural and electrical properties of ZnO and In2S3:Al thin layers

    NASA Astrophysics Data System (ADS)

    Jebbari, N.; Ajili, M.; Guasch, C.; Kamoun, N.; Bennaceur, R.

    2010-11-01

    Thin films of ZnO and In2S3:Al are deposited on Pyrex substrates by spray technique. Structural and electrical properties of ZnO and β-In2S3:Al compounds were studied using X Ray Diffraction (XRD), (MEB) and the Vander Pauw method before and after annealing. The X-rays revealed that, ZnO and In2S3:Al were well crystallized respectively in the hexagonal and cubic structure. The main orientations of ZnO were (101), (100) and (110). The (101) direction is the preferentially one. The annealing favors the preferential peak crystallization with a reduction of the grains size and the thickness layer. The β-In2S3 contain Aluminum inclusion by introducing the ratio x= [Al3+]/[In3+] in sprayed solution. X-ray diffraction spectra of In2-xAlxS3 thin layer, realized for the value of z equal to 20%, show well-defined peaks of (311), (400), (511), and (440) principal orientations corresponding to cubic structure of β-In2S3. For In2S3:Al, we note that the annealing increase the intensity of all peaks with an increase of the grains size and the thickness layer. Besides, thanks to the determination of the resistance from which we calculated resistivity, we note that the annealing increase conductivity of β-In2S3:Al and decrease it for ZnO.

  20. Substrate temperature effects on the electrical properties of sputtered Al doped ZnO thin films

    NASA Astrophysics Data System (ADS)

    Kim, Deok-Kyu; Kim, Hong-Bae

    2015-09-01

    Al doped ZnO (AZO) thin films were deposited on glass substrate by RF magnetron sputtering system. The dependence of structural, electrical, and optical properties on the substrate temperature variations in the range of 0-400 °C was investigated. The structural results reveal that the AZO films are (0 0 2) oriented and at 400 °C a considerable crystallinity enhancement of the films is observed. With increasing the substrate temperature, the resistivity is increased by decreasing of the mobility and carrier concentration. X-ray photoelectron spectroscopy (XPS) results show that the mobility and the carrier concentration are decreased by increasing the surface bonding and decreasing the Al content, respectively. In our case, the increase in substrate temperature suppressed the incorporation of Al atoms together with the decrease of oxygen vacancy. The improvement of Al doping efficiency is a very important factor to obtain better electrical properties at high substrate temperatures.

  1. Electrochemical Synthesis of Highly Oriented, Transparent, and Pinhole-Free ZnO and Al-Doped ZnO Films and Their Use in Heterojunction Solar Cells.

    PubMed

    Kang, Donghyeon; Lee, Dongho; Choi, Kyoung-Shin

    2016-10-04

    Electrochemical synthesis conditions using nonaqueous solutions were developed to prepare highly transparent (T > 90%) and crystalline ZnO and Al-doped ZnO (AZO) films for use in solar energy conversion devices. A focused effort was made to produce pinhole-free films in a reproducible manner by identifying a key condition to prevent the formation of cracks during deposition. The polycrystalline domains in the resulting films had a uniform orientation (i.e., the c-axis perpendicular to the substrate), which enhanced the electron transport properties of the films. Furthermore, electrochemical Al doping of ZnO using nonaqueous media, which was demonstrated for the first time in this study, effectively increased the carrier density and raised the Fermi level of ZnO. These films were coupled with an electrodeposited p-type Cu2O to construct p-n heterojunction solar cells to demonstrate the utilization of these films for solar energy conversion. The resulting n-ZnO/p-Cu2O and n-AZO/p-Cu2O cells showed excellent performance compared with previously reported n-ZnO/p-Cu2O cells prepared by electrodeposition. In particular, replacing ZnO with AZO resulted in simultaneous enhancements in short circuit current and open circuit potential, and the n-AZO/p-Cu2O cell achieved an average power conversion efficiency (η) of 0.92 ± 0.09%. The electrodeposition condition reported here will offer a practical and versatile way to produce ZnO or AZO films, which play key roles in various solar energy conversion devices, with qualities comparable to those prepared by vacuum-based techniques.

  2. Structure and thermoelectric properties of Al-doped ZnO films prepared by thermal oxidization under high magnetic field

    NASA Astrophysics Data System (ADS)

    Liu, Shiying; Peng, Sunjuan; Ma, Jun; Li, Guojian; Qin, Xuesi; Li, Mengmeng; Wang, Qiang

    2017-04-01

    This paper studies the effects of high magnetic field (HMF) on the structure, optical and thermoelectric properties of the doped ZnO thin films. The results show that both Al dopant and application of HMF can affect the crystal structure, surface morphology, elemental distribution and so on. The particles of the thin films become small and regular by doping Al. The ZnO films oxidized from the Au/Zn bilayer have needle structure. The ZnO films oxidized from the Au/Zn-Al bilayer transform to spherical from hexagonal due to the application of HMF. The transmittance decreases with doping Al because of the opaque of Al element and decreases with the application of HMF due to the dense structure obtained under HMF. Electrical resistivity (ρ) of the ZnO films without Al decreases with increasing measurement temperature (T) and is about 1.5 × 10-3 Ω·m at 210 °C. However, the ρ of the Al-doped ZnO films is less than 10-5 Ω·m. The Seebeck coefficient (S) of the films oxidized from the Au/Zn-Al films reduces with increasing T. The S values oxidized under 0 T and 12 T conditions are 2.439 μV/K and -3.415 μV/K at 210 °C, respectively. Power factor reaches the maximum value (3.198 × 10-4 W/m·K2) at 210 °C for the film oxidized under 12 T condition. These results indicate that the Al dopant and the application of HMF can be used to control structure and thermoelectric properties of doped ZnO films.

  3. Effects of Al Doping on the Properties of ZnO Thin Films Deposited by Atomic Layer Deposition

    NASA Astrophysics Data System (ADS)

    Zhai, Chen-Hui; Zhang, Rong-Jun; Chen, Xin; Zheng, Yu-Xiang; Wang, Song-You; Liu, Juan; Dai, Ning; Chen, Liang-Yao

    2016-09-01

    The tuning of structural, optical, and electrical properties of Al-doped ZnO films deposited by atomic layer deposition technique is reported in this work. With the increasing Al doping level, the evolution from (002) to (100) diffraction peaks indicates the change in growth mode of ZnO films. Spectroscopic ellipsometry has been applied to study the thickness, optical constants, and band gap of AZO films. Due to the increasing carrier concentration after Al doping, a blue shift of band gap and absorption edge can be observed, which can be interpreted by Burstein-Moss effect. The carrier concentration and resistivity are found to vary significantly among different doping concentration, and the optimum value is also discussed. The modulations and improvements of properties are important for Al-doped ZnO films to apply as transparent conductor in various applications.

  4. Effects of Al Doping on the Properties of ZnO Thin Films Deposited by Atomic Layer Deposition.

    PubMed

    Zhai, Chen-Hui; Zhang, Rong-Jun; Chen, Xin; Zheng, Yu-Xiang; Wang, Song-You; Liu, Juan; Dai, Ning; Chen, Liang-Yao

    2016-12-01

    The tuning of structural, optical, and electrical properties of Al-doped ZnO films deposited by atomic layer deposition technique is reported in this work. With the increasing Al doping level, the evolution from (002) to (100) diffraction peaks indicates the change in growth mode of ZnO films. Spectroscopic ellipsometry has been applied to study the thickness, optical constants, and band gap of AZO films. Due to the increasing carrier concentration after Al doping, a blue shift of band gap and absorption edge can be observed, which can be interpreted by Burstein-Moss effect. The carrier concentration and resistivity are found to vary significantly among different doping concentration, and the optimum value is also discussed. The modulations and improvements of properties are important for Al-doped ZnO films to apply as transparent conductor in various applications.

  5. Transparent conductive Al-doped ZnO thin films grown at room temperature

    SciTech Connect

    Wang Yuping; Lu Jianguo; Bie Xun; Gong Li; Li Xiang; Song Da; Zhao Xuyang; Ye Wenyi; Ye Zhizhen

    2011-05-15

    Aluminum-doped ZnO (ZnO:Al, AZO) thin films were prepared on glass substrates by dc reactive magnetron sputtering from a Zn-Al alloy target at room temperature. The effects of the Ar-to-O{sub 2} partial pressure ratios on the structural, electrical, and optical properties of AZO films were studied in detail. AZO films grown using 100:4 to 100:8 Ar-to-O{sub 2} ratio result in acceptable quality films with c-axis orientated crystals, uniform grains, 10{sup -3} {Omega} cm resistivity, greater than 10{sup 20} cm{sup -3} electron concentration, and high transmittance, 90%, in the visible region. The lowest resistivity of 4.11x10{sup -3} {Omega} cm was obtained under the Ar-to-O{sub 2} partial pressure ratio of 100:4. A relatively strong UV emission at {approx}3.26 eV was observed in the room-temperature photoluminescence spectrum. X-ray photoelectron spectroscopy analysis confirmed that Al was introduced into ZnO and substitutes for Zn and doped the film n-type.

  6. Sol-gel synthesis and characterization of undoped and Al-doped ZnO thin films for memristive application

    NASA Astrophysics Data System (ADS)

    Ayana, Dawit G.; Prusakova, Valentina; Collini, Cristian; Nardi, Marco V.; Tatti, Roberta; Bortolotti, Mauro; Lorenzelli, Leandro; Chiappini, Andrea; Chiasera, Alessandro; Ferrari, Maurizio; Lunelli, Lorenzo; Dirè, Sandra

    2016-11-01

    The Sol-gel route is a versatile method to fabricate multi-layer, dense and homogeneous ZnO thin films with a controlled thickness and defects for a memristive application. In this work, sol-gel derived multi-layer undoped and Al-doped ZnO thin films were prepared by a spin-coating technique on SiO2/Ti/Pt and silica glass substrates. The effect of both Al doping and curing conditions on the structural and morphological features of ZnO films was investigated by complementary techniques, including electron microscopy, atomic force microscopy, X-ray photoelectron spectroscopy, micro-Raman spectroscopy, and X-ray diffraction analysis. Electrical measurements were performed on SiO2/Ti/Pt/ZnO/Pt(dishes) and SiO2/Ti/Pt/ZnO(Al)/Pt(dishes) fabricated memristive cells and preliminary current-voltage curves were acquired.

  7. Bi-layer channel structure-based oxide thin-film transistors consisting of ZnO and Al-doped ZnO with different Al compositions and stacking sequences

    NASA Astrophysics Data System (ADS)

    Cho, Sung Woon; Yun, Myeong Gu; Ahn, Cheol Hyoun; Kim, So Hee; Cho, Hyung Koun

    2015-03-01

    Zinc oxide (ZnO)-based bi-layers, consisting of ZnO and Al-doped ZnO (AZO) layers grown by atomic layer deposition, were utilized as the channels of oxide thin-film transistors (TFTs). Thin AZO layers (5 nm) with different Al compositions (5 and 14 at. %) were deposited on top of and beneath the ZnO layers in a bi-layer channel structure. All of the bi-layer channel TFTs that included the AZO layers showed enhanced stability (Δ V Th ≤ 3.2 V) under a positive bias stress compared to the ZnO single-layer channel TFT (Δ V Th = 4.0 V). However, the AZO/ZnO bi-layer channel TFTs with an AZO interlayer between the gate dielectric and the ZnO showed a degraded field effect mobility (0.3 cm2/V·s for 5 at. % and 1.8 cm2/V·s for 14 at. %) compared to the ZnO single-layer channel TFT (5.5 cm2/V·s) due to increased scattering caused by Al-related impurities near the gate dielectric/channel interface. In contrast, the ZnO/AZO bi-layer channel TFTs with an AZO layer on top of the ZnO layer exhibited an improved field effect mobility (7.8 cm2/V·s for 14 at. %) and better stability. [Figure not available: see fulltext.

  8. Preparation and structural properties of pure and codoped (Mg, Ag) ZnO nanoparticles

    NASA Astrophysics Data System (ADS)

    Reddy, B. Sankara; Reddy, S. Venkatramana; Reddy, N. Koteeswara

    2013-06-01

    Pure and co-doped (Mg, Ag) ZnO nanoparticles (Zn0.90Mg0.05Ag0.05O) are synthesized by chemical co-precipitation method in the presence of capping agent Polyethylene glycol 600 (PEG 600) and annealed at 500°C in air ambient for 1h. The XRD measurements reveals that the pure and co-doped ZnO samples have hexagonal structure without any change and the size of ZnO nanoparicles were decreased from 17 nm to 13 nm. FESEM images indicates that they are flake like structures of the ZnO and co-doped ZnO samples and ED AX spectra reveals that the successful doping concentration of Mg and Ag. From the TEM results, the size of the ZnO nanoparticles which are in good agreement with the XRD results.

  9. Structure and Properties of Al and Ga- Doped ZnO

    NASA Astrophysics Data System (ADS)

    Temizer, Namik Kemal

    Recently there is tremendous interest in Transparent conducting oxide (TCO) research due to the unlimited and exciting application areas. Current research is mostly focused on finding alternative low cost and sustainable materials in order to replace indium tin oxide (ITO), which caused serious concern due to the increasing cost of indium and chemical stability issues of ITO. The primary aim of this research is to develop alternative TCO materials with superior properties in order to increase the efficiency in optoelectronic applications, as well as to study the properties of these materials to fully characterize them. We have grown Al and Ga-doped ZnO films with an optimized composition under different deposition conditions in order to understand the effect of processing parameters on the film properties. We report a detailed investigation on the structure-property correlations in Ga and Al codoped ZnO films on c-sapphire substrates where the thin film microstructure varies from nanocrystalline to single crystal. We have achieved highly epitaxial films with very high optical transmittance (close to 90%) and low resistivity (˜110muO-cm) values. The films grown in an ambient oxygen partial pressure (PO2 ) of 50 mTorr and at growth temperatures from room temperature to 600°C showed semiconducting behavior, whereas samples grown at a Po2 of 1 mTorr showed metallic nature. The most striking feature is the occurrence of resistivity minima at relatively high temperatures around 110 K in films deposited at high temperatures. The structure-property correlations reveal that point defects play an important role in modifying the structural, optical, electrical and magnetic properties and such changes in physical properties are controlled predominantly by the defect content. To gain a better understanding of the conduction processes in doped ZnO thin films, we have studied the temperature variation of resistivity of some selected samples that showed some interesting behavior

  10. Temperature dependent dual hydrogen sensor response of Pd nanoparticle decorated Al doped ZnO surfaces

    SciTech Connect

    Gupta, D.; Barman, P. B.; Hazra, S. K.; Dutta, D.; Kumar, M.; Som, T.

    2015-10-28

    Sputter deposited Al doped ZnO (AZO) thin films exhibit a dual hydrogen sensing response in the temperature range 40 °C–150 °C after surface modifications with palladium nanoparticles. The unmodified AZO films showed no response in hydrogen in the temperature range 40 °C–150 °C. The operational temperature windows on the low and high temperature sides have been estimated by isolating the semiconductor-to-metal transition temperature zone of the sensor device. The gas response pattern was modeled by considering various adsorption isotherms, which revealed the dominance of heterogeneous adsorption characteristics. The Arrhenius adsorption barrier showed dual variation with change in hydrogen gas concentration on either side of the semiconductor-to-metal transition. A detailed analysis of the hydrogen gas response pattern by considering the changes in nano palladium due to hydrogen adsorption, and semiconductor-to-metal transition of nanocrystalline Al doped ZnO layer due to temperature, along with material characterization studies by glancing incidence X-ray diffraction, atomic force microscopy, and transmission electron microscopy, are presented.

  11. Exploration of Al-Doped ZnO in Photovoltaic Thin Films

    NASA Astrophysics Data System (ADS)

    Ciccarino, Christopher; Sahiner, M. Alper

    The electrical properties of Al doped ZnO-based thin films represent a potential advancement in the push for increasing solar cell efficiency. Doping with Aluminum will theoretically decrease resistivity of the film and therefore achieve this potential as a viable option in the P-N junction phase of photovoltaic cells. The n-type semi-conductive characteristics of the ZnO layer will theoretically be optimized with the addition of Aluminum carriers. In this study, Aluminum doping concentrations ranging from 1-3% by mass were produced, analyzed, and compared. Films were developed onto ITO coated glass using the Pulsed Laser Deposition technique. Target thickness was 250 nm and ellipsometry measurements showed uniformity and accuracy in this regard. Active dopant concentrations were determined using Hall Effect measurements. Efficiency measurements showed possible applications of this doped compound, with upwards of 7% efficiency measured, using a Keithley 2602 SourceMeter set-up. XRD scans showed highly crystalline structures, with effective Al intertwining of the hexagonal wurtzile ZnO molecular structure. This alone indicates a promising future of collaboration between these two materials.

  12. Temperature dependent dual hydrogen sensor response of Pd nanoparticle decorated Al doped ZnO surfaces

    NASA Astrophysics Data System (ADS)

    Gupta, D.; Dutta, D.; Kumar, M.; Barman, P. B.; Som, T.; Hazra, S. K.

    2015-10-01

    Sputter deposited Al doped ZnO (AZO) thin films exhibit a dual hydrogen sensing response in the temperature range 40 °C-150 °C after surface modifications with palladium nanoparticles. The unmodified AZO films showed no response in hydrogen in the temperature range 40 °C-150 °C. The operational temperature windows on the low and high temperature sides have been estimated by isolating the semiconductor-to-metal transition temperature zone of the sensor device. The gas response pattern was modeled by considering various adsorption isotherms, which revealed the dominance of heterogeneous adsorption characteristics. The Arrhenius adsorption barrier showed dual variation with change in hydrogen gas concentration on either side of the semiconductor-to-metal transition. A detailed analysis of the hydrogen gas response pattern by considering the changes in nano palladium due to hydrogen adsorption, and semiconductor-to-metal transition of nanocrystalline Al doped ZnO layer due to temperature, along with material characterization studies by glancing incidence X-ray diffraction, atomic force microscopy, and transmission electron microscopy, are presented.

  13. Electrical and optical properties of Al doped Zno film prepared by spray pyrolysis technique

    NASA Astrophysics Data System (ADS)

    Shrestha, Shankar Prasad; Basnet, Pradeep

    2008-04-01

    Transparent conducting thin films of zinc oxides and aluminum doped zinc oxide (AZO) were prepared by the spray pyrolysis technique using an aqueous solution of dehydrate zinc acetate (CH 3COOH. 2H IIO, pure- Merck A. R. grade) and hex hydrate aluminum chloride (AlCl 3 .6H IIO) on the micro glass slides. The prepared thin films are found to be highly adherent to the substrate and possess uniform conduction. The optical and electrical properties of the film were investigated in terms of different Al concentration in the starting solution and different substrate temperature. Four probe method in Van der pauw configuration was used for electrical resistivity measurements. The resistivity of Al doped film is observed to vary with doping concentration. The lowest resistivity is observed in the film doping with 2 at % [Al/Zn]. The Hall coefficient measurements show that both ZnO and AZO show the n-type conduction. The carrier concentration was observed to be highest at 2 at% of Al doping. The optical measurements of all the samples with aluminum concentrations was found to be >85 % showing the film to be highly transparent in nature. With increase in Al concentration, the optical band gap was observed increase from 3.27 eV to 3.41 eV.

  14. Influence of the P2O5/Al2O3 co-doping on the local environment of erbium ions and on the 1.5 μm quantum efficiency of Er3+-borosilicate glasses

    NASA Astrophysics Data System (ADS)

    Bourhis, Kevin; Boetti, Nadia G.; Koponen, Joona; Milanese, Daniel; Petit, Laetica

    2014-03-01

    In this paper, the absorption properties of Er3+-doped borosilicate glasses with various P2O5 and Al2O3 content are measured for different silica concentrations. The Judd-Ofelt parameters (Ω2, Ω4 and Ω6) have been calculated in order to investigate the local environment of the rare-earth cations. The compositional changes of Ω2 and Ω6 are attributed to changes in the bonding between Er3+ and surrounding ligand groups due to structural modifications occurring with the introduction of P2O5 and Al2O3. The luminescence quantum efficiency of the 4I13/2 → 4I15/2 transition slightly increases with the addition of P2O5 whereas it decreases with the progressive replacement of P2O5 by Al2O3. We noticed that it also increases when the silica content is higher.

  15. Optical parameters of Al-doped ZnO nanorod array thin films grown via the hydrothermal method.

    PubMed

    Kim, Soaram; Kim, Min Su; Nam, Giwoong; Park, Hyunggil; Yoon, Hyunsik; Leem, Jae-Young

    2013-09-01

    ZnO seed layers were deposited onto a quartz substrate using the sol--gel method, and Al-doped ZnO (AZO) nanorod array thin films with different Al concentrations that ranged from 0 to 2.0 at. % were grown on the ZnO seed layers via the hydrothermal method. Optical parameters, including the optical band gap, the absorption coefficient, the Urbach energy, the refractive index, the dispersion parameter, and the optical conductivity, were studied to investigate the effects of Al doping on the optical properties of AZO nanorod array thin films. The optical band gaps of the ZnO and AZO nanorod array thin films were 3.206 at 0 at.%, 3.214 at 0.5 at.%, 3.226 at 1.5 at.%, and 3.268 at 2.0 at.%. The Urbach energy gradually decreased from 126 meV (0 at.%) to 70 meV (2.0 at.%) as the Al concentration was increased. The dispersion energy, the single-oscillator energy, the average oscillator wavelength, the average oscillator strength, the refractive index, and the optical conductivity of the AZO nanorod array thin films were all affected by Al doping.

  16. Structural, electrical, and optical properties of atomic layer deposition Al-doped ZnO films

    SciTech Connect

    Banerjee, P; Lee, W. J.; Bae, K. R.; Lee, Sang Bok; Rubloff, Gary W

    2010-01-01

    Al-doped ZnO (AZO) films of ~100nm thickness with various Aldoping were prepared at 150°C by atomic layer deposition on quartz substrates. At low Aldoping, the films were strongly textured along the [100] direction, while at higher Aldoping the films remained amorphous. Atomic force microscopy results showed that Al–O cycles when inserted in a ZnOfilm, corresponding to a few atomic percent Al, could remarkably reduce the surface roughness of the films. Hall measurements revealed a maximum mobility of 17.7cm{sup 2} /Vs . Film resistivity reached a minima of 4.4×10{sup -3} Ωcm whereas the carrier concentration reached a maxima of 1.7×10{sup 20} cm{sup -3} , at 3 at.% Al. The band gap of AZO films varied from 3.23 eV for undoped ZnOfilms to 3.73 eV for AZO films with 24.6 at.% Al. Optical transmittance over 80% was obtained in the visible region. The detrimental impact of increased Al resulting in decreased conductivity due to doping past 3.0 at.% is evident in the x-ray diffraction data, as an abrupt increase in the optical band gap and as a deviation from the Burstein–Moss effect.

  17. Enhanced photoluminescence and Raman properties of Al-Doped ZnO nanostructures prepared using thermal chemical vapor deposition of methanol assisted with heated brass.

    PubMed

    Thandavan, Tamil Many K; Gani, Siti Meriam Abdul; San Wong, Chiow; Md Nor, Roslan

    2015-01-01

    Vapor phase transport (VPT) assisted by mixture of methanol and acetone via thermal evaporation of brass (CuZn) was used to prepare un-doped and Al-doped zinc oxide (ZnO) nanostructures (NSs). The structure and morphology were characterized by field emission scanning electron microscopy (FESEM) and x-ray diffraction (XRD). Photoluminescence (PL) properties of un-doped and Al-doped ZnO showed significant changes in the optical properties providing evidence for several types of defects such as zinc interstitials (Zni), oxygen interstitials (Oi), zinc vacancy (Vzn), singly charged zinc vacancy (VZn-), oxygen vacancy (Vo), singly charged oxygen vacancy (Vo+) and oxygen anti-site defects (OZn) in the grown NSs. The Al-doped ZnO NSs have exhibited shifted PL peaks at near band edge (NBE) and red luminescence compared to the un-doped ZnO. The Raman scattering results provided evidence of Al doping into the ZnO NSs due to peak shift from 145 cm-1 to an anomalous peak at 138 cm-1. Presence of enhanced Raman signal at around 274 and 743 cm-1 further confirmed Al in ZnO NSs. The enhanced D and G band in all Al-doped ZnO NSs shows possible functionalization and doping process in ZnO NSs.

  18. Enhanced Photoluminescence and Raman Properties of Al-Doped ZnO Nanostructures Prepared Using Thermal Chemical Vapor Deposition of Methanol Assisted with Heated Brass

    PubMed Central

    Thandavan, Tamil Many K.; Gani, Siti Meriam Abdul; San Wong, Chiow; Md. Nor, Roslan

    2015-01-01

    Vapor phase transport (VPT) assisted by mixture of methanol and acetone via thermal evaporation of brass (CuZn) was used to prepare un-doped and Al-doped zinc oxide (ZnO) nanostructures (NSs). The structure and morphology were characterized by field emission scanning electron microscopy (FESEM) and x-ray diffraction (XRD). Photoluminescence (PL) properties of un-doped and Al-doped ZnO showed significant changes in the optical properties providing evidence for several types of defects such as zinc interstitials (Zni), oxygen interstitials (Oi), zinc vacancy (Vzn), singly charged zinc vacancy (VZn-), oxygen vacancy (Vo), singly charged oxygen vacancy (Vo+) and oxygen anti-site defects (OZn) in the grown NSs. The Al-doped ZnO NSs have exhibited shifted PL peaks at near band edge (NBE) and red luminescence compared to the un-doped ZnO. The Raman scattering results provided evidence of Al doping into the ZnO NSs due to peak shift from 145 cm-1 to an anomalous peak at 138 cm-1. Presence of enhanced Raman signal at around 274 and 743 cm-1 further confirmed Al in ZnO NSs. The enhanced D and G band in all Al-doped ZnO NSs shows possible functionalization and doping process in ZnO NSs. PMID:25756598

  19. Efficiency enhancement of regular-type perovskite solar cells based on Al-doped ZnO nanorods as electron transporting layers

    NASA Astrophysics Data System (ADS)

    Huang, Zheng-Lun; Chen, Chih-Ming; Lin, Zheng-Kun; Yang, Sheng-Hsiung

    2017-02-01

    In this paper, we first incorporated Al(NO3)3·9H2O as the Al source into ZnO nanorods (NRs) lattice via the hydrothermal method to modify nature properties of ZnO NRs for the fabrication of perovskite solar cells (PSCs). The X-ray diffraction (XRD) pattern of Al-doped ZnO NRs exhibits higher 2θ values and stronger intensity of (002) plane. Larger optical band gap and higher electrical conductivity of Al-doped ZnO NRs are also observed relative to non-doped ZnO ones. The steady-state photoluminescence shows effective charge extraction and collection at the interface between Al-doped ZnO NRs and perovskite layer. The optimized PSC based on Al-doped ZnO NRs showed an open-circuit voltage of 0.84 V, a short-circuit current density of 21.93 mA/cm2, a fill factor of 57%, and a power conversion efficiency of 10.45% that was 23% higher than the non-doped ZnO ones.

  20. Effects of Al concentration on microstructural characteristics and electrical properties of Al-doped ZnO thin films on Si substrates by atomic layer deposition.

    PubMed

    Lee, Ju Ho; Lee, Jae-Won; Hwang, Sooyeon; Kim, Sang Yun; Cho, Hyung Koun; Lee, Jeong Yong; Park, Jin-Seong

    2012-07-01

    Al-doped ZnO (AZO) thin films with various Al concentrations were synthesized on Si(001) substrates with native oxide layers by atomic layer deposition process. The effects of the Al concentration on the microstructural characteristics of the AZO thin films grown at 250 degrees C and the correlation between their microstructural characteristics and electrical properties of the AZO thin films were investigated by AFM, XRD, HRTEM and Hall measurements. The XRD and HRTEM results revealed that the crystallinity and electrical properties of the undoped ZnO thin films were enhanced by 2.48 at% Al doping. However, 12.62 at% Al doping induced the deterioration of their crystallinity and electrical properties due to the formation of nano-sized metallic Al clusters and randomly oriented ZnO-based nano-crystals. To enhance the electrical properties of the AZO thin films while maintaining their crystallinity and electrical properties, a moderate Al concentration has to be chosen under the solubility limit of Al in ZnO.

  1. Work function increase of Al-doped ZnO thin films by B+ ion implantation.

    PubMed

    Hong, Sang-Jin; Heo, Gi-Seok; Park, Jong-Woon; Lee, In-Hwan; Choi, Bum-Ho; Lee, Jong-Ho; Park, Se-Yeon; Shin, Dong-Chan

    2007-11-01

    The work function of an Al-doped ZnO (AZO) thin film can be increased via B+ ion implantation from 3.92 eV up to 4.22 eV. The ion implantation has been carried out with the ion dose of 1 x 10(16) cm(-2) and ion energy of 5 keV. The resistance of the B+ implanted AZO films has been a bit raised, while their transmittance is slightly lowered, compared to those of un-implanted AZO films. These behaviors can be explained by the doping profile and the resultant band diagram. It is concluded that the coupling between the B+ ions and oxygen vacancies would be the main reason for an increase in the work function and a change in the other properties. We also address that the work function is more effectively alterable if the defect density of the top transparent conducting oxide layer can be controlled.

  2. Sputter deposition of Al-doped ZnO films with various incident angles

    SciTech Connect

    Sato, Yasushi; Yanagisawa, Kei; Oka, Nobuto; Nakamura, Shin-ichi; Shigesato, Yuzo

    2009-09-15

    Al-doped ZnO (AZO) films were sputter deposited on glass substrates heated at 200 degree sign C under incident angles of sputtered particles at 0 degree sign (incidence normal to substrate), 20 deg., 40 deg., 60 deg., and 80 deg. In the case of normal incidence, x-ray diffraction pole figures show a strong [001] preferred orientation normal to the film surface. In contrast, in the case wherein the incident angles were higher than 60 degree sign , the [001] orientation inclined by 25 deg. - 35 deg. toward the direction of sputtered particles. Transmission electron microscopy revealed that the tilt angle of the [001] orientation increased with increasing angle of the incident sputtered particles, whereas the columnar structure did not show any sign of inclination with respect to the substrate plane.

  3. Absence of dipolar ordering in Co doped CuO

    NASA Astrophysics Data System (ADS)

    Chaudhary, N. Vijay Prakash; Murthy, J. Krishna; Venimadhav, A.

    2016-12-01

    Polycrystalline CuO samples with Co doping were prepared by solid state method with flowing oxygen condition and examined their structural and multiferroic properties. Structural studies have confirmed single phase monoclinic crystal structure of all samples, however, in Co doped samples a decrease in volume with an increase in monoclinic distortion is found. For pristine sample, temperature dependent magnetization has confirmed two antiferromagnetic (AFM) transitions at 213 K and 230 K and frequency independent dielectric peaks at these AFM transitions suggesting the ferroelectric nature. Magnetization of the Co doped samples has showed a marginal increase in ordering temperature of the high-temperature AFM transition and decrease in low temperature AFM ordering temperature. Further, doped samples have shown giant dielectric constant with no signature of ferroelectricity. The X-ray photoelectric spectroscopy study has revealed multiple valance states for both Co and Cu in the doped samples that simultaneously explain the giant dielectric constant and suppression of ferroelectric order.

  4. Quality-enhanced AlN epitaxial films grown on c-sapphire using ZnO buffer layer for SAW applications

    NASA Astrophysics Data System (ADS)

    Fu, Sulei; Li, Qi; Gao, Shuang; Wang, Guangyue; Zeng, Fei; Pan, Feng

    2017-04-01

    AlN epitaxial films with a thin ZnO buffer layer were successfully deposited on c-sapphire by DC magnetron sputtering for surface acoustic wave (SAW) applications. The effect of ZnO buffer layer thickness on structural properties of AlN epitaxial films and the related SAW properties were investigated systematically. The results revealed that a thin ZnO buffer layer can significantly enhance the crystalline quality of AlN films and release the strain in AlN films. The AlN films were epitaxially grown on ZnO buffered-substrate with orientation relationship of (0001) [ 10 1 bar 0 ] AlN//(0001) [ 10 1 bar 0 ] ZnO//(0001) [2 bar 110 ] Al2O3. High frequency SAW devices with a center frequency of 1.4 GHz, a phase velocity of 5600 m/s were achieved on the obtained AlN films. The optimum ZnO buffer layer thickness was found to be 10 nm, resulting in high-quality epitaxial AlN films with a FWHM value of the rocking curve of 0.84°, nearly zero stress and low insertion loss of SAW devices. This work offers an effective approach to achieve high-quality AlN epitaxial films on sapphire substrates for the applications of AlN-based SAW devices.

  5. Transparent conducting Si-codoped Al-doped ZnO thin films prepared by magnetron sputtering using Al-doped ZnO powder targets containing SiC

    SciTech Connect

    Nomoto, Jun-ichi; Miyata, Toshihiro; Minami, Tadatsugu

    2009-07-15

    Transparent conducting Al-doped ZnO (AZO) thin films codoped with Si, or Si-codoped AZO (AZO:Si), were prepared by radio-frequency magnetron sputtering using a powder mixture of ZnO, Al{sub 2}O{sub 3}, and SiC as the target; the Si content (Si/[Si+Zn] atomic ratio) was varied from 0 to 1 at. %, but the Al content (Al/[Al+Zn] atomic ratio) was held constant. To investigate the effect of carbon on the electrical properties of AZO:Si thin films prepared using the powder targets containing SiC, the authors also prepared thin films using a mixture of ZnO, Al{sub 2}O{sub 3}, and SiO{sub 2} or SiO powders as the target. They found that when AZO:Si thin films were deposited on glass substrates at about 200 degree sign C, both Al and Si doped into ZnO acted as effective donors and the atomic carbon originating from the sputtered target acted as a reducing agent. As a result, sufficient improvement was obtained in the spatial distribution of resistivity on the substrate surface in AZO:Si thin films prepared with a Si content (Si/[Si+Zn] atomic ratio) of 0.75 at. % using powder targets containing SiC. The improvement in resistivity distribution was mainly attributed to increases in both carrier concentration and Hall mobility at locations on the substrate corresponding to the target erosion region. In addition, the resistivity stability of AZO: Si thin films exposed to air for 30 min at a high temperature was found to improve with increasing Si content.

  6. Enhanced mechanism investigation on violet-blue emission of ZnO films by incorporating Al and Zn to form ZnO-Al-Zn films

    NASA Astrophysics Data System (ADS)

    Chen, Haixia; Ding, Jijun; Wang, Xiaomeng; Wang, Xiaojun; Chen, Guoxiang; Ma, Li

    2016-12-01

    ZnO, ZnO-Zn, ZnO-Al0.10-Zn and ZnO-Al0.15-Zn are deposited on glass substrates by radio frequency and direct current magnetron co-sputtering. Photoluminescence (PL) measurements show that the optical performances of samples are strongly dependent on both Al and Zn incoprations. The origin of the defect-related PL emission has been investigated for a long time. Several different hypotheses have been proposed, however, they are still under investigation. Especially for the blue emissions, its origins have been debated intensely for more than thirty years because of its sparsity and instability. In this paper, both violet and blue emissions are observed in all the samples. PL emission decreases sharply as Zn is doped in ZnO to form ZnO-Zn film. However, as both Al and Zn are simultaneously doped in ZnO to form ZnO-Al0.10-Zn film, PL emission conversely increases and attains the maxima. In addition, PL emission decreases again with the increase of Al target power to form ZnO-Al0.15-Zn film. We concluded that violet-blue emission is ascribed to defect types in reverse change trend with interstitial Zn, such as Zn vacancies. This is different from previous universal hypothesis that violet-blue emission is from interstitial Zn defects.

  7. Mechanisms of lighting enhancement of Al nanoclusters-embedded Al-doped ZnO film in GaN-based light-emitting diodes

    SciTech Connect

    Lee, Hsin-Ying; Chou, Ying-Hung; Lee, Ching-Ting

    2010-01-15

    Aluminum (Al)-doped ZnO (AZO) films with embedded Al nanoclusters were proposed and utilized to enhance the light output power and maximum operation current of GaN-based light-emitting diodes (LEDs). The AZO films were sputtered using ZnO and Al targets in a magnetron cosputtering system. With Al dc power of 7 W and ZnO 100 W ac power, the electron concentration of 4.1x10{sup 20} cm{sup -3}, electron mobility of 16.2 cm{sup 2}/V s, and resistivity of 7.2x10{sup -4} {Omega} cm were obtained for the deposited AZO film annealed at 600 deg. C for 1 min in a N{sub 2} ambient. As verified by a high resolution transmission electron microscopy, the deposited AZO films with embedded Al nanoclusters were clearly observed. A 35% increase in light output power of the GaN-based LEDs with Al nanoclusters-embedded AZO films was realized compared with the conventional LEDs operated at 500 mA. It was verified experimentally that the various characteristics of GaN-based LEDs including the antireflection, light scattering, current spreading, and the light extraction efficiency in light emission could be significantly enhanced with the use of Al nanoclusters-embedded AZO films.

  8. Optical characterization of pure and Al-doped ZnO prepared by sol-gel method

    NASA Astrophysics Data System (ADS)

    Belka, Radosław; Keczkowska, Justyna; Kasińska, Justyna

    2016-09-01

    In this paper the preparation process and optical characterization of pure and Al3+ doped zinc oxide (Al:ZnO) coatings will be presented. ZnO based materials have been studied extensively due to their potential applications in optoelectronic devices as conductive gas sensors, transparent conductive, electrodes, solar cell windows, varistors, UVfilters or photovoltaic cells. It is II-VI semiconductor with wide-band gap of 3.37 eV and large exciton binding energy of 60meV. It is possible to improve the conductivity of ZnO coating by intentionally doping ZnO with aluminium ions during preparation process. Such transparent and conducting thin films, known as AZO (Aluminium Zinc Oxide) films, are very good candidate for application as transparent conducting materials in many optoelectronic devices. The well-known sol-gel method is used for preparation of solution, coated on glass substrates by dip coating process. Prepared samples were investigated by Raman and UV-VIS spectroscopy. Transmittance as well as specular and diffuse reflectance spectroscopy methods were used for studies of optical parameters. We found that Al admixture influences on optical bandgap of ZnO.

  9. Enhanced Performance in Al-Doped ZnO Based Transparent Flexible Transparent Thin-Film Transistors Due to Oxygen Vacancy in ZnO Film with Zn-Al-O Interfaces Fabricated by Atomic Layer Deposition.

    PubMed

    Li, Yang; Yao, Rui; Wang, Huanhuan; Wu, Xiaoming; Wu, Jinzhu; Wu, Xiaohong; Qin, Wei

    2017-04-05

    Highly conductive and optical transparent Al-doped ZnO (AZO) thin film composed of ZnO with a Zn-Al-O interface was fabricated by thermal atomic layer deposition (ALD) method. The as-prepared AZO thin film exhibits excellent electrical and optical properties with high stability and compatibility with temperature-sensitive flexible photoelectronic devices; film resistivity is as low as 5.7 × 10(-4) Ω·cm, the carrier concentration is high up to 2.2 × 10(21) cm(-3). optical transparency is greater than 80% in a visible range, and the growth temperature is below 150 °C on the PEN substrate. Compared with the conventional AZO film containing by a ZnO-Al2O3 interface, we propose that the underlying mechanism of the enhanced electrical conductivity for the current AZO thin film is attributed to the oxygen vacancies deficiency derived from the free competitive growth mode of Zn-O and Al-O bonds in the Zn-Al-O interface. The flexible transparent transistor based on this AZO electrode exhibits a favorable threshold voltage and Ion/Ioff ratio, showing promising for use in high-resolution, fully transparent, and flexible display applications.

  10. Low temperature synthesis of radio frequency magnetron sputtered gallium and aluminium co-doped zinc oxide thin films for transparent electrode fabrication

    NASA Astrophysics Data System (ADS)

    Muchuweni, E.; Sathiaraj, T. S.; Nyakotyo, H.

    2016-12-01

    Gallium and aluminium co-doped zinc oxide (GAZO) thin films were prepared on glass substrates at low temperatures by radio frequency (rf) magnetron sputtering and their physical properties were investigated. All films possessed a hexagonal wurtzite crystal structure with a strong growth orientation along the (0 0 2) c-axis. The (0 0 2) peak intensity and mean crystallite size increased with substrate temperature from room temperature (RT) to 75 °C and then decreased at 100 °C, indicating an improvement in crystallinity up to 75 °C and its deterioration at 100 °C. Scanning electron microscopy (SEM) micrographs revealed the strong dependency of surface morphology on substrate temperature and energy dispersive spectroscopy (EDS) confirmed the incorporation of Ga and Al into the ZnO films. All films exhibited excellent transmittances between 85 and 90% in the visible region and their optical band gap increased from 3.22 eV to 3.28 eV with substrate temperature. The Urbach energy decreased from 194 meV to 168 meV with increasing substrate temperature, indicating a decrease in structural disorders which was consistent with X-ray Diffraction (XRD) analysis. Films deposited at 75 °C exhibited the lowest electrical resistivity (2.4 Ωcm) and highest figure of merit (7.5 × 10-5 Ω-1), proving their potential as candidates for transparent electrode fabrication.

  11. Alternative Dielectric Films for rf MEMS Capacitive Switches Deposited using Atomic Layer Deposited Al2O3/ZnO Alloys

    DTIC Science & Technology

    2006-07-02

    switches deposited using atomic layer deposited Al2O3/ZnO alloys Cari F. Herrmann a,b, Frank W. DelRio a, David C. Miller a, Steven M. George b,c, Victor...The layer is an alloy mixture of Al2O3 and ZnO and is proposed for use as charge dissipative layers in which the dielectric onstant is significant...investigates Al2O3/ZnO ALD alloys deposited at 100 and 177 ◦C and compares their material properties. Auger electron pectroscopy was used to determine the

  12. Effect of Er3+ and Yb3+ co-doping on the performance of a ZnO-based DSSC

    NASA Astrophysics Data System (ADS)

    Tsege, Ermias Libnedengel; Vu, Hong Ha Thi; Atabaev, Timur Sh.; Kim, Hyung-Kook; Hwang, Yoon-Hwae

    2016-06-01

    Zinc-oxide (ZnO) nanoparticles (NPs) co-doped with different concentrations of rare-earth ions of erbium and ytterbium, (ZnO: Er3+, Yb3+) were synthesized for applications to ZnO-based dye sensitized solar cells (DSSC). The composite NPs used for the photoelectrode (PE) were synthesized using a simple co-precipitation technique. X-ray diffraction and scanning electron microscopy measurements on the prepared samples revealed a single phase wurzite ZnO powder with approximate sizes in the range from 15 to 20 nm. Photoluminescence (PL) measurements confirmed that the synthesized composite NPs had a good up-conversion (UPC) property. The prepared powders were directly used to make PEs for DSSCs. The photovoltaic efficiency of the DSSCs was enhanced compared to that of pure ZnO-based DSSCs. Particularly, the PE made up of ZnO: Er3+, Yb3+ NPs with 4 wt% of Er3+ and Yb3+ generates a short-circuit current density ( J sc ) of 4.794 mA·cm -2 and an open circuit voltage ( V oc ) of 0.602 V with an efficiency ( η) of 1.58%. The result indicates a 48.4% J sc improvement compared to a pure ZnO PE-based DSSC. The photocurrent improvement is due to an increase in the light-harvesting capacity of the PEs attained through the UPC property of ZnO: Er3+, Yb3+ NPs. As confirmed by PL and electrochemical impedance spectra (EIS), the use of ZnO: Er3+,Yb3+ NPs as PEs for DSSCs enhances charge concentration and transport as a result of n-type doping. However, all ZnO: Er3+, Yb3+ NP based PEs exhibited a lower V oc as a result of a down shift in the Fermi energy, which affects the overall efficiency of the cell.

  13. The effect of sol aging time on Structural and Optical properties of sol gel ZnO doped Al

    NASA Astrophysics Data System (ADS)

    El Hallani, G.; Fazouan, N.; Liba, A.; Khuili, M.

    2016-10-01

    Currently the doped or undoped ZnO semiconductor is of great importance in the field of electronic and optoelectronic devices such as transparent conductors and optical windows of solar cells based on silicon. ZnO thin films are produced by several techniques such as sol-gel method which is a chemical technique usually dependent on solution conditions. However, the sol gel aging time is an important parameter, which can have a significant impact on the properties of thin films. In this work we studied the effect of aging times (0h, 24h, 48h, 72h, 1 week) of the precursor solution on the structural and optical properties of ZnO doped Al (3 at.%). Thin films prepared by spin coating on glass substrates were investigated. The X-ray diffraction (XRD) analysis shows that the ZnO doped Al (3 at.%) exhibit the hexagonal wurtzite structure with a preferential orientation along [002] direction. The shift of (002) peaks towards higher diffraction angles is observed with sol aging time and also, a variation of crystallite sizes and thickness of thin films are shown with increasing sol aging time. All films present an average optical transmittance around 90% in the visible range with some interference fringes indicating a relative smoothness of films. We note an increasing in transmittance level with sol aging time from 0h to 48h. We can conclude that the aging times of the precursor solution influences the structural and optical properties of studied thin films.

  14. Effects of annealing pressure and Ar+ sputtering cleaning on Al-doped ZnO films

    NASA Astrophysics Data System (ADS)

    Wang, Jiwei; Mei, Yong; Lu, Xuemei; Fan, Xiaoxing; Kang, Dawei; Xu, Panfeng; Tan, Tianya

    2016-11-01

    Post-treatments of Al-doped ZnO films fabricated by sol-gel method were studied in condition of annealing in air, vacuum and protective ambient, as well as the follow-up Ar+ sputtering cleaning. The effect of annealing pressure on resistivity of AZO films was investigated from 105 to 10-4 Pa, where the resistivity decreased four orders of magnitude as the pressure decreased and approached to its minimum at 10 Pa. It was observed that the main decreasing of resistivity occurred in a very narrow range of middle vacuum (between 100 and 10 Pa) and high vacuum was dispensable. The XRD and XPS characterizations demonstrated that the radical increasing of oxygen vacancy, Zn interstitial and substitution of Al3+ for Zn2+ under middle vacuum were responsible for the significant enhancement of conductivity. The follow-up Ar+ sputtering cleaning can further decrease the resistivity through removing the chemisorbed oxygen on film surface and grain boundaries, meanwhile fulfil the surface texture process, and thus improve both electrical and optical performances for applications.

  15. Synthesis Al complex and investigating effect of doped ZnO nanoparticles in the electrical and optical efficiency of OLEDS

    NASA Astrophysics Data System (ADS)

    Shahedi, Zahra; Jafari, Mohammad Reza

    2017-01-01

    In this study, an organometallic complex based on aluminum ions is synthesized. And it is utilized as fluorescent material in the organic light-emitting diodes (OLEDs). The synthesized complex was characterized using XRD, UV-Vis, FT-IR as well as PL spectroscopy analyses. The energy levels of Al complex were determined by cyclic voltammetry measurements. Then, the effects of ZnO nanoparticles (NPs) of poly(3,4-ethylenedioxythiophene):poly(styrene sulfonate), PEDOT:PSS, on the electrical and optical performance of the organic light-emitting diodes have been investigated. For this purpose, two samples containing ITO/PEDOT:PSS/PVK/Alq3/PBD/Al with two different concentration and two samples containing ITO/PEDOT:PSS:ZnO/PVK/Alq3/PBD/Al with two different concentration were prepared. Then, hole transport, electron transport and emissive layers were deposited by the spin coating method and the cathode layer (Al) was deposited by the thermal evaporation method. The OLED simulation was also done by constructing the model and choosing appropriate parameters. Then, the experimental data were collected and the results interpreted both qualitatively and quantitatively. The results of the simulations were compared with experimental data of the J-V spectra. Comparing experimental data and simulation results showed that the electrical and optical efficiency of the samples with ZnO NPs is appreciably higher than the samples without ZnO NPs.

  16. Effects of In, Al and Sn dopants on the structural and optical properties of ZnO thin films.

    PubMed

    Caglar, Yasemin; Ilican, Saliha; Caglar, Mujdat; Yakuphanoglu, Fahrettin

    2007-07-01

    Effect of In, Al and Sn dopants on the optical and structural properties of ZnO thin films have been investigated by X-ray diffraction technique and optical characterization method. X-ray diffraction patterns confirm that the films have polycrystalline nature. The thin films have (002) as the preferred orientation. This (002) preferred orientation is due to the minimal surface energy which the hexagonal structure, c-plane to the ZnO crystallites, corresponds to the densest packed plane. The grain size values of the films are found to be 29.0, 35.2 and 39.5 nm for In, Al and Sn doped ZnO thin films, respectively. The optical band gaps of the films were calculated. The absorption edge shifts to the lower wavelengths with In, Al and Sn dopants. The inclusion of dopant into films expands also width of localized states as E(UIn)>E(UAl)>E(USn). The refractive index dispersion curves obey the single oscillator model. The dispersion parameters and optical constants of the films were determined. These parameters changed with In, Al and Sn dopants.

  17. A facile cost-effective method for preparing poinsettia-inspired superhydrophobic ZnO nanoplate surface on Al substrate with corrosion resistance

    NASA Astrophysics Data System (ADS)

    Wang, Peng; Han, Huilong; Li, Junfeng; Fan, Xiaoliang; Ding, Haimin; Wang, Jinfeng

    2016-02-01

    This paper reports an easy method to imitate the "poinsettia leaves" by constructing ZnO nanoplates on Al substrate. Using ammonium hydroxide as the reactant, together with zinc nitrate hexahydrate, randomly distributed ZnO nanoplates can be fabricated on the Al substrate directly. The morphology of the ZnO nanoplates can be controlled by the growth time, and the nanoplate growth mechanism is discussed in detail. After modification with stearic acid, the nanoplate surface shows a stable superhydrophobicity. Moreover, the superhydrophobic ZnO nanoplate surface showed much smaller corrosion current density, reduced 23,088-fold from the bare Al 6061 substrate. This facile and low-cost method may open a new avenue in the design and fabrication of superhydrophobic surfaces on Al materials with anticorrosive property.

  18. Temperature-dependence on the structural, optical, and magnetic properties of Al-doped ZnO nanoparticles

    NASA Astrophysics Data System (ADS)

    Lu, Xiaofei; Liu, Yongsheng; Si, Xiaodong; Shen, Yulong; Yu, Wenying; Wang, Wenli; Luo, Xiaojing; Zhou, Tao

    2016-12-01

    Al-doped ZnO nanoparticles synthesized by a hydrothermal method at relatively low temperature synthesis and anneal were reported in this paper. The XRD results reveal that all the samples have a hexagonal wurtzite structure. A higher synthesis temperature leads to a slight increase in the grain size and improvement of the crystal quality. Different morphologies evolved from acicular closely-packed morphology to dandelion-like 3D nanostructures can be obtained by controlling the synthesis temperatures. Moreover, the influence of synthesis temperature on optical property indicates that the absorption ability in ultraviolet region declines with increasing the synthesis temperature. In addition, the annealed nanoparticles have an enhancement of the room temperature ferromagnetism (RT-FM) and the saturation magnetization (MS). Those results suggest that Al-doped ZnO nanoparticles synthesized at relatively low temperature could be a promising candidate for photosensitive and room temperature nanolasers applications.

  19. Genesis of flake-like morphology and dye-sensitized solar cell performance of Al-doped ZnO particles: a study

    NASA Astrophysics Data System (ADS)

    Sengupta, D.; Mondal, B.; Mukherjee, K.

    2017-03-01

    In dye-sensitized solar cell (DSSC) application, the particulate morphologies of photo-anode facilitate efficient dye loading and thus lead to better photo-conversion efficiency than their thin film counterpart. However, till date, the electronic and optical properties as well as the DSSC application of Al-doped ZnO (AZO) particles as photo-anode material is studied less than thin films. Herein, phase formation behavior, morphology evolution, optical properties, and dye-sensitized solar cell performance of wet chemically prepared ZnO and AZO (dopant level: 1-4 mol%) particles are studied. It is found that Al doping modulates significantly the ZnO morphology which in turn results the maximum dye adsorption as well as best photo-conversion efficiency at optimum dopant concentration. Specifically, the nanoparticle of ZnO turns predominantly to flake-like morphology with a higher surface area when 2 mol% Al is doped. Such morphology modulation is expected, since the crystallinity, lattice parameters, and lattice strain of ZnO changes appreciably with Al doping. The variations of optical properties (absorbance, diffused reflectance, and band gap) of AZO materials as compared to primitive ZnO are also identified through UV-vis studies. An attempt is made here to correlate the structural features with the photovoltaic performances of ZnO and AZO.

  20. Highly piezoelectric MgZr co-doped aluminum nitride-based vibrational energy harvesters.

    PubMed

    Minh, Le Van; Hara, Motoaki; Yokoyama, Tsuyoshi; Nishihara, Tokihiro; Ueda, Masanori; Kuwano, Hiroki

    2015-11-01

    The first MgZr co-doped AlN-based vibrational energy harvester (VEH) is presented. (MgZr)AlN, which is a new class of doped AlN, provides high piezoelectricity and cost advantage. Using 13%-(MgZr)-doped AlN for micromachined VEHs, maximum output power of 1.3 μW was achieved with a Q-factor of 400 when resonant frequency, vibration acceleration, load resistance were 792 Hz, 8 m/s(2), and 1.1 MΩ, respectively. Normalized power density was 8.1 kW·g(-2)·m(-3). This was one of the highest values among the currently available piezoelectric VEHs.

  1. Robustly Single-mode Polarization Maintaining Er/Yb co-doped LMA Fiber for High Power Applications

    DTIC Science & Technology

    2007-05-08

    the fabrication of highly efficient, polarization maintaining ( PM ) LMA fibers. A PM - LMA Er/Yb co-doped fiber suitable for nanosecond pulsed...associated with fabricating LMA Er/Yb and Tm-doped fibers have previously been discussed in detail by Tankala et. al. [6]. In the case of a PM - LMA ...demonstrate a large core diameter PM Er/Yb fiber incorporating a unique raised inner-cladding which facilitates the use of conventional LMA mode selection

  2. Competition between (001) and (111) MgO thin film growth on Al-doped ZnO by oxygen plasma assisted pulsed laser deposition

    SciTech Connect

    Xiao, Bo; Yang, Qiguang; Walker, Brandon; Gonder, Casey A.; Romain, Gari C.; Mundle, Rajeh; Bahoura, Messaoud; Pradhan, A. K.

    2013-06-07

    We report on the study of epitaxial MgO thin films on (0001) Al-doped ZnO (Al: ZnO) underlayers, grown by oxygen plasma assisted pulsed laser deposition technique. A systematic investigation of the MgO thin films was performed by X-ray diffraction and atomic force microscopy, along with the current-voltage characteristics. A distinguished behavior was observed that the preferred MgO orientation changes from (111) to (001) in the films as the growth temperature increases. Two completely different in-plane epitaxial relationships were also determined from X-ray diffraction as: [110]MgO//[1120]Al: ZnO and [110]MgO//[1100]Al: ZnO for (001) MgO with 60 Degree-Sign rotated triplet domains, and [110]MgO//[1120]Al: ZnO for (111) MgO with 180 Degree-Sign rotated twin. The pronounced temperature dependence indicates a reconciliation of the nucleation driving forces among surface, interfacial, and strain energy for heteroepitaxy of cubic MgO on hexagonal Al: ZnO. The related interfacial atomic registry is considered to be important to the formation of unusual (001) MgO on hexagonal crystals. In addition, the electrical characterization revealed a dramatic reduction of the leakage current in (001) MgO thin films, whereas the small grain size of (111) MgO is identified by atomic force microscopy as a main cause of large leakage current.

  3. High carrier concentration ZnO nanowire arrays for binder-free conductive support of supercapacitors electrodes by Al doping.

    PubMed

    Zheng, Xin; Sun, Yihui; Yan, Xiaoqin; Sun, Xu; Zhang, Guangjie; Zhang, Qian; Jiang, Yaru; Gao, Wenchao; Zhang, Yue

    2016-12-15

    Doping semiconductor nanowires (NWs) for altering their electrical and optical properties is a critical strategy for tailoring the performance of nanodevices. Here, we prepared in situ Al-doped ZnO nanowire arrays by using continuous flow injection (CFI) hydrothermal method to promote the conductivity. This reasonable method offers highly stable precursor concentration for doping that effectively avoid the appearance of the low conductivity ZnO nanosheets. Benefit from this, three orders of magnitude rise of the carrier concentration from 10(16)cm(-3) to 10(19)cm(-3) can be achieved compared with the common hydrothermal (CH) mothed in Mott-Schottky measurement. Possible effect of Al-doping was discussed by first-principle theory. On this basis, Al-doped ZnO nanowire arrays was developed as a binder-free conductive support for supercapacitor electrodes and high capacitance was triggered. It is owing to the dramatically decreased transfer resistance induced by the growing free-moving electrons and holes. Our results have a profound significance not merely in the controlled synthesis of other doping nanomaterials by co-precipitation method but also in the application of binder-free energy materials or other materials.

  4. Characterization of Al-As codoped p-type ZnO films by magnetron cosputtering deposition

    SciTech Connect

    Yun, Eui-Jung; Park, Hyeong-Sik; Lee, Kyu H.; Nam, Hyoung G.; Jung, Myunghee

    2008-04-01

    We report the preparation of Al-As codoped p-type ZnO films by rf magnetron cosputtering deposition. The p-type conductivity of the films was revealed by Hall measurements, x-ray photoelectron spectroscopy (XPS), and photoluminescence measurements after being annealed in O{sub 2}. It was observed by XPS that Al content increased with increasing AlAs target power from 80 to 160 W and reached a maximum value at an AlAs target power of 160 W. Hole concentration decreased with increasing Al content. With increasing AlAs target power greater than 160 W, the samples exhibit increases in As and O contents and decreases in Al and Zn contents, which contribute to the increase in hole concentration. A high hole concentration of 2.354x10{sup 20} cm{sup -3}, a low resistivity of 2.122x10{sup -2} {omega} cm, and a Hall mobility of 0.13 cm{sup 2}/V s for the films with high As content of 16.59% were obtained. XPS has also been used to address the unresolved issues related to the p-type formation mechanism of As-doped ZnO, supporting that the acceptor is As{sub Zn}-2V{sub Zn}.

  5. The formation of tungsten doped Al2O3/ZnO coatings on aluminum by plasma electrolytic oxidation and their application in photocatalysis

    NASA Astrophysics Data System (ADS)

    Stojadinović, Stevan; Vasilić, Rastko; Radić, Nenad; Tadić, Nenad; Stefanov, Plamen; Grbić, Boško

    2016-07-01

    Tungsten doped Al2O3/ZnO coatings are formed by plasma electrolytic oxidation of aluminum substrate in supporting electrolyte (0.1 M boric acid + 0.05 M borax + 2 g/L ZnO) with addition of different concentrations of Na2WO4·2H2O. The morphology, crystal structure, chemical composition, and light absorption characteristics of formed surface coatings are investigated. The X-ray diffraction and X-ray photoelectron spectroscopy results indicate that formed surface coatings consist of alpha and gamma phase of Al2O3, ZnO, metallic tungsten and WO3. Obtained results showed that incorporated tungsten does not have any influence on the absorption spectra of Al2O3/ZnO coatings, which showed invariable band edge at about 385 nm. The photocatalytic activity of undoped and tungsten doped Al2O3/ZnO coatings is estimated by the photodegradation of methyl orange. The photocatalytic activity of tungsten doped Al2O3/ZnO coatings is higher thanof undoped Al2O3/ZnO coatings; the best photocatalytic activity is ascribed to coatings formed in supporting electrolyte with addition of 0.3 g/L Na2WO4·2H2O. Tungsten in Al2O3/ZnO coatings acts as a charge trap, thus reducing the recombination rate of photogenerated electron-hole pairs. The results of PL measurements are in agreement with photocatalytic activity. Declining PL intensity corresponds to increasing photocatalytic activity of the coatings, indicating slower recombination of electron-hole pairs.

  6. Structural and electronic properties of ZnO nanoparticles grown on p-Si and Al2O3 substrates by using spin coating and thermal treatment.

    PubMed

    No, Young Soo; Son, Dong Ick; Leem, Jae Hyeon; Kim, Su Youn; Oh, Do Hyun; Kim, Tae Whan

    2008-10-01

    ZnO nanoparticles were formed on p-Si and Al2O3 substrates by using spin coating and thermal treatment method. Scanning electron microscopy images and X-ray energy dispersive spectrometry profiles showed that ZnO nanoparticles were formed on p-Si and Al2O3 substrates. X-ray diffraction patterns showed that ZnO nanoparticles formed on the p-Si substrates had polycrystalline hexagonal wurtzite structures and that those formed on the Al2O3 substrates had a c-axis preferential orientation. X-ray photoelectron spectroscopy profiles showed that the O 1s and the Zn 2p peaks corresponding to the ZnO nanoparticles were observed.

  7. Effects of co-doping on ferromagnetism in (Zn,Cr)Te.

    NASA Astrophysics Data System (ADS)

    Kuroda, Shinji

    2007-03-01

    Room-temperature ferromagnetism in semiconductors has emerged as one of the most challenging topics in today's materials science and technology. Indeed, enormous research activities have so far been directed towards developing ferromagnetic semiconductors with high transition temperatures. Despite many reports claiming high-temperature ferromagnetism for a broad class of diluted magnetic semiconductors, their intrinsic nature has sometimes been controversial[1], with a lack of elaborated analysis of structural and electronic properties. Among them, Cr-doped ZnTe has been regarded as one of the promising materials of room-temperature ferromagnetism because its intrinsic nature was confirmed through magnetic circular dichroism (MCD) measurement[2]. In this presentation, we report the effect of co-doping of charge impurities on ferromagnetic properties in this material. It was found that ferromagnetism was suppressed in (Zn,Cr)Te co-doped with nitrogen (N) as an acceptor impurity[3] and was enhanced in a crystal co-doped with iodine (I) as a donor impurity[4]. In particular, the apparent Curie temperature TC of Zn1-xCrxTe with a Cr composition of x = 0.05 increased up to 300K at maximum due to I-doping, compared to TC˜30K in the undoped crystal. In the structural and compositional analysis using TEM/EDS, it was revealed that the origin of this remarkable effect of the co-doping was the variation of Cr distribution in the crystals; the Cr distribution was strongly inhomogeneous in I-doped crystals with higher TC, in contrast to an almost uniform distribution in undoped or N-doped crystals with lower TC or being paramagnetic. In the crystals of inhomogeneous distribution, Cr-rich regions with a typical size of several ten nanometers formed in the Cr-poor matrix act as ferromagnetic nanoclusters, resulting in an apparent ferromagnetic behavior of the whole crystal. These variation of the Cr uniformity can be linked to a change in the Cr charge state due to the co-doping

  8. Fabrication of nanostructured Al-doped ZnO thin film for methane sensing applications

    NASA Astrophysics Data System (ADS)

    Shafura, A. K.; Sin, N. D. Md.; Azhar, N. E. I.; Saurdi, I.; Uzer, M.; Mamat, M. H.; Shuhaimi, A.; Alrokayan, Salman A. H.; Khan, Haseeb A.; Rusop, M.

    2016-07-01

    CH4 gas sensor was fabricated using spin-coating method of the nanostructured ZnO thin film. Effect of annealing temperature on the electrical and structural properties of the film was investigated. Dense nanostructured ZnO film are obtained at higher annealing temperature. The optimal condition of annealing temperature is 500°C which has conductivity and sensitivity value of 3.3 × 10-3 S/cm and 11.5%, respectively.

  9. Studies on visible light photocatalytic and antibacterial activities of nanostructured cobalt doped ZnO thin films prepared by sol-gel spin coating method

    NASA Astrophysics Data System (ADS)

    Poongodi, G.; Anandan, P.; Kumar, R. Mohan; Jayavel, R.

    2015-09-01

    Nanostructured cobalt doped ZnO thin films were deposited on glass substrate by sol-gel spin coating technique and characterized by X-ray diffraction, X-ray photoelectron spectroscopy, field-emission scanning electron microscopy, energy-dispersive X-ray spectroscopy and UV-Vis spectroscopy. The XRD results showed that the thin films were well crystalline with hexagonal wurtzite structure. The results of EDAX and XPS revealed that Co was doped into ZnO structure. FESEM images revealed that the films possess granular morphology without any crack and confirm that Co doping decreases the grain size. UV-Vis transmission spectra show that the substitution of Co in ZnO leads to band gap narrowing. The Co doped ZnO films were found to exhibit improved photocatalytic activity for the degradation of methylene blue dye under visible light in comparison with the undoped ZnO film. The decrease in grain size and extending light absorption towards the visible region by Co doping in ZnO film contribute equally to the improved photocatalytic activity. The bactericidal efficiency of Co doped ZnO films were investigated against a Gram negative (Escherichia coli) and a Gram positive (Staphylococcus aureus) bacteria. The optical density (OD) measurement showed better bactericidal activity at higher level of Co doping in ZnO.

  10. Studies on visible light photocatalytic and antibacterial activities of nanostructured cobalt doped ZnO thin films prepared by sol-gel spin coating method.

    PubMed

    Poongodi, G; Anandan, P; Kumar, R Mohan; Jayavel, R

    2015-09-05

    Nanostructured cobalt doped ZnO thin films were deposited on glass substrate by sol-gel spin coating technique and characterized by X-ray diffraction, X-ray photoelectron spectroscopy, field-emission scanning electron microscopy, energy-dispersive X-ray spectroscopy and UV-Vis spectroscopy. The XRD results showed that the thin films were well crystalline with hexagonal wurtzite structure. The results of EDAX and XPS revealed that Co was doped into ZnO structure. FESEM images revealed that the films possess granular morphology without any crack and confirm that Co doping decreases the grain size. UV-Vis transmission spectra show that the substitution of Co in ZnO leads to band gap narrowing. The Co doped ZnO films were found to exhibit improved photocatalytic activity for the degradation of methylene blue dye under visible light in comparison with the undoped ZnO film. The decrease in grain size and extending light absorption towards the visible region by Co doping in ZnO film contribute equally to the improved photocatalytic activity. The bactericidal efficiency of Co doped ZnO films were investigated against a Gram negative (Escherichia coli) and a Gram positive (Staphylococcus aureus) bacteria. The optical density (OD) measurement showed better bactericidal activity at higher level of Co doping in ZnO.

  11. Enhancement ZnO nanofiber as semiconductor for dye-sensitized solar cells by using Al doped

    NASA Astrophysics Data System (ADS)

    Sutanto, Bayu; Arifin, Zainal; Suyitno, Hadi, Syamsul; Pranoto, Lia Muliani; Agustia, Yuda Virgantara

    2016-03-01

    The purpose of this research is to produce Al-doped ZnO (AZO) nanofibers in order to enhance the performance of Dye-Sensitized Solar Cell (DSSC). AZO nanofiber semiconductor was manufactured by electrospinning process of Zinc Acetate Dehydrate (Zn(CH3COO)2) solution and precursor of Polyvinyl Acetate (PVA). The doping process of Al was built by dissolving 0-4 wt% in concentrations of AlCl3 to Zinc Acetate. AZO green fiber was sintered at temperature 500°C for an hour. The result shows that Al doped ZnO had capability to increase the electrical conductivity of semiconductor for doping 0, 1, 2, 3, and 4 wt% for 2,07×10-3; 3,71×10-3; 3,59 ×10-3; 3,10 ×10-3 and 2,74 ×10-3 S/m. The best performance of DSSC with 3 cm2 active area was obtained at 1 wt% Al-ZnO which the value of VOC, ISC, FF, and efficiency were 508,43 mV, 3,125 mA, 38,76%, and 0,411% respectively. These coincide with the electrical conductivity of semiconductor and the crystal size of XRD result that has the smallest size as compared to other doping variations.

  12. Synthesis of nano ZnO thin film on Al foil by rf glow discharge plasma and its effect on E. coli and P. aeruginosa

    NASA Astrophysics Data System (ADS)

    Panigrahi, Jagannath; Nayak, Bijan B.; Behera, Debadhyan; Subudhi, Umakanta; Acharya, Bhabani S.

    2012-09-01

    Nano ZnO thin films were deposited on thin Al foils by a rf glow discharge plasma method in which sublimed zinc acetate vapor (precursor) reacted with oxygen plasma inside a low-pressure reactor. The films were microstructurally characterized using XRD, TEM, FESEM, optical reflectance and micro-Raman spectroscopy methods. In view of the good scope of ZnO coating in food packaging, the antibacterial activity in the ZnO thin films was studied by exposing the films to E. coli and P. aeruginosa for up to 8 h. Bacterial cell inhibition of up to 98-99 % was observed in the thin films.

  13. Electrical and optical properties of p-type codoped ZnO thin films prepared by spin coating technique

    NASA Astrophysics Data System (ADS)

    Pathak, Trilok Kumar; Kumar, Vinod; Swart, H. C.; Purohit, L. P.

    2016-03-01

    Undoped, doped and codoped ZnO thin films were synthesized on glass substrates using a spin coating technique. Zinc acetate dihydrate, ammonium acetate and aluminum nitrate were used as precursor for zinc, nitrogen and aluminum, respectively. X-ray diffraction shows that the thin films have a hexagonal wurtzite structure for the undoped, doped and co-doped ZnO. The transmittance of the films was above 80% and the band gap of the film varied from 3.20 eV to 3.24 eV for undoped and doped ZnO. An energy band diagram to describe the photoluminescence from the thin films was also constructed. This diagram includes the various defect levels and possible quasi-Fermi levels. A minimum resistivity of 0.0834 Ω-cm was obtained for the N and Al codoped ZnO thin films with p-type carrier conductivity. These ZnO films can be used as a window layer in solar cells and in UV lasers.

  14. Characteristics of Al-doped ZnO films grown by atomic layer deposition for silicon nanowire photovoltaic device.

    PubMed

    Oh, Byeong-Yun; Han, Jin-Woo; Seo, Dae-Shik; Kim, Kwang-Young; Baek, Seong-Ho; Jang, Hwan Soo; Kim, Jae Hyun

    2012-07-01

    We report the structural, electrical, and optical characteristics of Al-doped ZnO (ZnO:Al) films deposited on glass by atomic layer deposition (ALD) with various Al2O3 film contents for use as transparent electrodes. Unlike films fabricated by a sputtering method, the diffraction peak position of the films deposited by ALD progressively moved to a higher angle with increasing Al2O3 film content. This indicates that Zn sites were effectively replaced by Al, due to layer-by-layer growth mechanism of ALD process which is based on alternate self-limiting surface chemical reactions. By adjusting the Al2O3 film content, a ZnO:Al film with low electrical resistivity (9.84 x 10(-4) Omega cm) was obtained at an Al2O3 film content of 3.17%, where the Al concentration, carrier mobility, optical transmittance, and bandgap energy were 2.8 wt%, 11.20 cm2 V(-1) s(-1), 94.23%, and 3.6 eV, respectively. Moreover, the estimated figure of merit value of our best sample was 8.2 m7Omega(-1). These results suggest that ZnO:Al films deposited by ALD could be useful for electronic devices in which especially require 3-dimensional conformal deposition of the transparent electrode and surface passivation.

  15. Al-doped ZnO contact to CdZnTe for x- and gamma-ray detector applications

    NASA Astrophysics Data System (ADS)

    Roy, U. N.; Camarda, G. S.; Cui, Y.; Gul, R.; Hossain, A.; Yang, G.; Mundle, R. M.; Pradhan, A. K.; James, R. B.

    2016-06-01

    The poor adhesion of common metals to CdZnTe (CZT)/CdTe surfaces has been a long-standing challenge for radiation detector applications. In this present work, we explored the use of an alternative electrode, viz., Al-doped ZnO (AZO) as a replacement to common metallic contacts. ZnO offers several advantages over the latter, such as having a higher hardness, a close match of the coefficients of thermal expansion for CZT and ZnO, and better adhesion to the surface of CZT due to the contact layer being an oxide. The AZO/CZT contact was investigated via high spatial-resolution X-ray response mapping for a planar detector at the micron level. The durability of the device was investigated by acquiring I-V measurements over an 18-month period, and good long-term stability was observed. We have demonstrated that the AZO/CZT/AZO virtual-Frisch-grid device performs fairly well, with comparable or better characteristics than that for the same detector fabricated with gold contacts.

  16. (Indium, Aluminum) co-doped Zinc Oxide as a Novel Material System for Quantum-Well Multilayer Thermoelectrics

    NASA Astrophysics Data System (ADS)

    Teehan, Sean

    Waste heat recovery from low efficiency industrial processes requires high performance thermoelectric materials to meet challenging requirements. The efficiency such a device is quantified by the dimensionless figure of merit ZT=S2sigmaT/kappa, where S is the Seebeck coefficient, sigma is the electrical conductivity, T is the absolute temperature and kappa is the thermal conductivity. For practical applications these devices are only cost-effective if the ZT is higher than 2. Theoretically it has been proven that by engineering nanostructures with lower dimensionality one can significantly increase ZT. A superlattice, or a system of 2-dimensional multilayer quantum wells has previously shown the potential to be used for thermoelectric structures. However, the use of conventional materials within these structures has only allowed this at low temperatures and has utilized cross-plane transport. This study focuses on both high temperature range operation and the in-plane transport properties of such structures, which benefit from both quantum confinement and an enhancement in density of states near EF. The n-type structures are fabricated by alternately sputtering barrier and well materials of Al-doped ZnO (AZO) and indium co-doped AZO, respectively. Samples investigated consist of 50 periods with targeted layer thicknesses of 10nm, which results in sufficient sampling material as well as quantum well effects. The indium doping level within the quantum well was controlled by varying the target power, and ultimately results in a 3x improvement in power factor (S 2sigma) over the parent bulk materials. The film characterization was determined by X-ray reflectometry, transmission electron microscopy, X-ray diffraction, auger electron spectroscopy, as well as other relevant techniques. In addition, process optimization was performed on material parameters such as layer thickness, interface roughness, and band-gap offset which all play a major role in determining the

  17. Dependence on pressure of the refractive indices of wurtzite ZnO, GaN, and AlN

    SciTech Connect

    Goni, AR; Kaess, F; Reparaz, JS; Alonso, MI; Garriga, M; Callsen, G; Wagner, MR; Hoffmann, A; Sitar, Z

    2014-07-25

    We have measured both the ordinary and extraordinary refractive index of m-plane cuts of wurtzite ZnO, GaN, and AlN single crystals at room temperature and as a function of hydrostatic pressure up to 8 GPa. For that purpose we have developed an alternative optical interference method, called bisected-beam method, which leads, in general, to high contrast interference fringes. Its main feature, however, is to be particularly suitable for high pressure experiments with the diamond anvil cell, when the refractive index of the sample is low and similar to that of diamond and/or the pressure transmitting medium, as is the case here. For all three wide-gap materials we observe a monotonous decrease of the ordinary and extraordinary refractive indices with increasing pressure, being most pronounced for GaN, less marked for ZnO, and the smallest for AlN. The frequency dependence of the refractive indices was extrapolated to zero energy using a critical-point-plus-Lorentz-oscillator model of the ordinary and extraordinary dielectric function. In this way, we determined the variation with pressure of the electronic part (no-phonon contribution) of the static dielectric constant epsilon(infinity). Its volume derivative, r = d ln epsilon(infinity)/d ln V, serves as single scaling coefficient for comparison with experimental and/or theoretical results for other semiconductors, regarding the pressure effects on the dielectric properties. We have obtained an ordinary/extraordinary average value (r) over bar of 0.49(15) for ZnO, 1.22(9) for GaN, and 0.32(4) for AlN. With the values for the ordinary and extraordinary case being within experimental uncertainty, there is thus no apparent change in dielectric anisotropy under pressure for these wurtzite semiconductors. Results are discussed in terms of the pressure-dependent electronic band structure of the materials.

  18. Properties of atomic-layer-deposited Al2O3/ZnO dielectric films grown at low temperature for RF MEMS

    NASA Astrophysics Data System (ADS)

    Herrmann, Cari F.; Del Rio, Frank W.; George, Steven M.; Bright, Victor M.

    2005-01-01

    Al2O3/ZnO alloy films were grown at 100°C using atomic layer deposition (ALD) techniques. It has been previously established that the resistivity of these films can be tuned over a wide range by varying the amount of Zn in the film. Al2O3/ZnO ALD alloy films can therefore be designed with a dielectric constant high enough to provide a large down-state capacitance and a resistivity low enough to promote the dissipation of trapped charges. The material and electrical properties of the Al2O3/ZnO ALD films were investigated using Auger electron spectroscopy (AES), nanoindentation, and mercury probe measurements. Chemical analysis using AES confirmed the presence of both Al and Zn in the alloys. The nanoindentation measurements were used to calculate the Young's modulus and hardness of the films. Pure Al2O3 ALD was determined to have a modulus between 150 and 155 GPa and a hardness of ~8 GPa, while the results for pure ZnO ALD indicated a modulus between 120 and 140 GPa and a hardness of ~5 GPa. An Al2O3/ZnO ALD alloy displayed a modulus of 140-145 GPa, which falls between the two pure films, and a hardness of ~8 GPa, which is similar to the pure Al2O3 film. The dielectric constants of the ALD films were calculated from the mercury probe measurements and were determined to be around 6.8. These properties indicate that the Al2O3/ZnO ALD films can be engineered as a property specific dielectric layer for RF MEMS devices.

  19. Comparative study on beryllium and magnesium as a co-doping element for ZnO:N

    NASA Astrophysics Data System (ADS)

    Yu-Quan, Su; Ming-Ming, Chen; Long-Xing, Su; Yuan, Zhu; Zi-Kang, Tang

    2016-06-01

    Stable nitrogen doping is an important issue in p-type ZnO research for device applications. In this paper, beryllium and magnesium are systematically compared as a dopant in ZnO to reveal their nitrogen-stabilizing ability. Secondary ion mass spectrum shows that Be and Mg can both enhance the stability of nitrogen in ZnO while Be has a better performance. Zn 2p and O 1s electron binding energies change in both MgZnO and BeZnO thin films. Donor-acceptor luminescence is observed in the BeZnO samples. We conclude that Be is a better co-doping element than Mg for p-type ZnO:N. Project supported by the National Key Basic Research Program of China (Grant No. 2011CB302000), the National Natural Science Foundation of China (Grant Nos. 51232009 and 51202299), the Fundamental Research Funds for the Central Universities, China (Grant No. 11lgpy16), the Natural Science Foundation for Jiangsu Provincial Higher Education, Institutions of China (Grant No. 15KJB510005), and the Talent Fund of Jiangsu University, China (Grant No. 15JDG042).

  20. Origin of the Phase Transition of AlN, GaN, and ZnO Nanowires

    SciTech Connect

    Wu, Y.; Chen, G.; Ye, H.; Zhu, Y.; Wei, S. H.

    2009-06-01

    The stabilities of AlN, GaN, and ZnO nanowires/nanorods with different structures and sizes are investigated using first-principles calculations. We found a structure transformation from the graphitelike phase to wurtzite phase as the diameter and length of the nanowire increases. We show that this is due to the competition between the bond energy, the Coulomb energy, and the energy originating from the dipole field of the wurtzite structure. A mechanism of growing uniform nanowires using a graphitelike structure as a precursor is proposed through analyzing the phase diagram of these materials.

  1. CdS/CdSe-sensitized solar cell based on Al-doped ZnO nanoparticles prepared by the decomposition of zinc acetate solid solution

    NASA Astrophysics Data System (ADS)

    Deng, Jianping; Wang, Minqiang; Ye, Wei; Fang, Junfei; Zhang, Pengchao; Yang, Yongping; Yang, Zhi

    2017-01-01

    In the study, Al-doped ZnO nanoparticles (Al-ZnO NPs) were prepared by the decomposition of zinc acetate solid solution. The X-ray diffraction results showed that Al3+ was successfully doped without the formation of Al and Al2O3 impurity phases. The less Al-doping did not change the hexagonal wurtzite crystal structure of ZnO. The ratio of Al to Al + Zn (9.05%) measured by the energy dispersive X-ray also confirmed the formation of Al-ZnO. The Al-ZnO NPs were used as the photoanode material to prepare CdS/CdSe-sensitized solar cell. Compared with the cell based on commercial ZnO NPs (C-ZnO), the short-circuit current density and the fill factor of the cell were increased from 5.8 mA/cm2 and 34.1% (C-ZnO) to 7.78 mA/cm2 and 48.7% (Al-ZnO), respectively. The cell efficiency was increased from 1.01% (C-ZnO) to (1.9%) (Al-ZnO) and the increase percentage reached 88.1%. The results of electrochemical impedance spectroscopy and open-circuit voltage-decay suggested the lower carrier transport resistance and the longer electron lifetime of Al-ZnO-based cell.

  2. Optical and electrical properties of ZnO nanocrystal thin films passivated by atomic layer deposited Al2O3

    NASA Astrophysics Data System (ADS)

    Choi, Ji-Hyuk; Kim, Jungwoo; Oh, Soong Ju; Kim, Daekyoung; Kim, Yong-Hoon; Chae, Heeyeop; Kim, Hyoungsub

    2016-07-01

    While colloidal semiconductor nanocrystal (NC) is preferred for use in solution-based optoelectronic devices, the large number of surface defects associated with its high surface-to-volume ratio degrades the optimal performance of NC-based devices due to the extensive trapping of free carriers available for charge transport. Here, we studied a simple and effective strategy to control the degree of passivation and doping level of solution-deposited ZnO NC films by infilling with ultra-thin Al2O3 using an atomic layer deposition (ALD) technique. According to various spectroscopic, microstructural, and electrical analyses, the ALD-Al2O3 treatment dramatically reduced the number of surface trap states with high ambient stability while simultaneously supplied excess carriers probably via a remote doping mechanism. As a consequence, the field-effect transistors built using the ZnO NC films with ALD-Al2O3 treatment for an optimal number of cycles exhibited significantly enhanced charge transport.

  3. High rate reactive magnetron sputter deposition of Al-doped ZnO with unipolar pulsing and impedance control system

    SciTech Connect

    Nishi, Yasutaka; Hirohata, Kento; Tsukamoto, Naoki; Sato, Yasushi; Oka, Nobuto; Shigesato, Yuzo

    2010-07-15

    Al-doped ZnO (AZO) films were deposited on quartz glass substrates, unheated and heated to 200 deg. C, using reactive sputtering with a special feedback system of discharge impedance combined with midfrequency pulsing. A planar Zn-Al alloy target was connected to the switching unit, which was operated in a unipolar pulse mode. The oxidation of the target surface was precisely controlled by a feedback system for the entire O{sub 2} flow ratio including ''the transition region''. The deposition rate was about 10-20 times higher than that for films deposited by conventional sputtering using an oxide target. A deposition rate of AZO films of 390 nm/min with a resistivity of 3.8x10{sup -4} {Omega} cm and a transmittance in the visible region of 85% was obtained when the films were deposited on glass substrates heated to 200 deg. C with a discharge power of 4 kW.

  4. Electronic structure of Al- and Ga-doped ZnO films studied by hard X-ray photoelectron spectroscopy

    SciTech Connect

    Gabás, M.; Ramos Barrado, José R.; Torelli, P.; Barrett, N. T.

    2014-01-01

    Al- and Ga-doped sputtered ZnO films (AZO, GZO) are semiconducting and metallic, respectively, despite the same electronic valence structure of the dopants. Using hard X-ray photoelectron spectroscopy we observe that both dopants induce a band in the electronic structure near the Fermi level, accompanied by a narrowing of the Zn 3d/O 2p gap in the valence band and, in the case of GZO, a substantial shift in the Zn 3d. Ga occupies substitutional sites, whereas Al dopants are in both substitutional and interstitial sites. The latter could induce O and Zn defects, which act as acceptors explaining the semiconducting character of AZO and the lack of variation in the optical gap. By contrast, mainly substitutional doping is consistent with the metallic-like behavior of GZO.

  5. Characteristics of ZnO thin films doped by various elements

    NASA Astrophysics Data System (ADS)

    Kahraman, S.; Çakmak, H. M.; Çetinkaya, S.; Bayansal, F.; Çetinkara, H. A.; Güder, H. S.

    2013-01-01

    We have investigated the effects of Al, K and Co dopant elements on the properties of ZnO thin films deposited by CBD method on glass substrates. Changing in morphology, structural parameters, ionization energies of impurity levels, absorption behavior and optical band gap values were investigated through scanning electron microscopy (SEM), X-Ray diffraction (XRD), resistance-temperature measurement (R-T) and ultraviolet-visible spectroscopy (UV-vis) techniques. From the SEM observations, various morphologies (rod-like, flower-like and rice-like) were observed. Those morphological variations were attributed to the change in stable growth mechanism of intrinsic ZnO, induced by different atomic radius and different electronegativity of dopants. XRD results indicated that all orientations are well indexed to hexagonal phase crystalline ZnO. The impurity level ionization energy values (ΔE) were estimated as 0.32/0.13/0.07 eV; 0.34/0.15 eV; 0.40/0.13 eV and 0.48/0.22 eV for the Al, K, Co doped samples and i-ZnO, respectively. Optical band gap values were found that the doped samples' were higher than the intrinsic one's. This increasing (blue shift) was attributed to a deterioration which occurred in the lattice of the structures after doping. This effect was also supported by the structural results.

  6. Doping effect of Ag+, Mn2+ ions on Structural and Optical Properties of ZnO nanoparticles

    NASA Astrophysics Data System (ADS)

    Sankara Reddy, B.; Venkatramana Reddy, S.; Venkateswara Reddy, P.; Koteeswara Reddy, N.; Vijayalakshmi, R. P.

    2015-02-01

    Pure ZnO and co-doped (Mn, Ag) ZnO nanoparticles have been successfully prepared by chemical co-precipitation method without using a capping agent. X-ray diffraction (XRD) studies confirms the presence of wurtzite (hexagonal) crystal structure similar to undoped ZnO, suggesting that doped Mn, Ag ions are substituted to the regular Zn sites. The morphology of the samples were studied by scanning electron microscopy (SEM). The chemical composition of pure and co-doped ZnO nanoparticles were characterized by energy dispersive X-ray analysis spectroscopy (EDAX). Optical absorption properties were determined by UV-vis Diffuse Reflectance Spectrophotometer. The incorporation of Ag+, Mn2+ in the place of Zn2+ provoked to decrease the size of nanocrystals as compared to pure ZnO. Optical absorption measurements indicates blue shift in the absorption band edge upon Ag, Mn ions doped ZnO nanoparticles.

  7. On the variations of optical property and electronic structure in heavily Al-doped ZnO films during double-step growth process

    SciTech Connect

    Hu, Q. C.; Ding, K. Zhang, J. Y.; Yan, F. P.; Pan, D. M.; Huang, F.; Chiou, J. W.

    2014-01-13

    We have investigated the variations of optical property and electronic structure in heavily Al-doped ZnO (AZO) films during the growth process, which were formed by first creating Zn vacancies in O{sub 2}-rich atmosphere and second filling the vacancies with Zn atoms in Zn-vapor atmosphere. After the first step, the high-resistance AZO films have the same optical bandgap with nominally undoped ZnO, indicating that negligible variations in the fundamental bandgap happened to the AZO films although Al atom was incorporated into the ZnO lattice. After the second step, once free electrons were brought into the lattice by Zn-filling, the optical transition energy blueshifts due to the band-filling effect. X-ray absorption fine structure measurements suggest that Zn-filling process decreased the unoccupied states of the conduction band, but not raised the conduction band minimum.

  8. Investigation of the interrelation between the chemical state and the electric properties in Al-doped ZnO films

    NASA Astrophysics Data System (ADS)

    Wang, Jinzhao; Ni, Dongfang; Zhang, Tianjin; Wang, Duofa; Liang, Kun

    2015-09-01

    Transparent conducting Al-doped ZnO (AZO) thin films were prepared on glass substrates by radio frequency magnetron sputtering in pure Ar. The influence of the annealing atmosphere on the microstructure, chemical state, electric and optical properties of the AZO films was investigated with X-ray diffraction, field-emission scanning electron microscopy, X-ray photoelectron spectroscopy and Hall measurements. The AZO thin films annealed under vacuum had the highest carrier concentration of 2.488 × 1020 cm-3 and a Hall mobility of 16.35 cm2 V-1 s-1, while the AZO thin films annealed in air had the lowest carrier concentration of 4.182 × 1017 cm-3 and a Hall mobility of 2.375 cm2 V-1 s-1. The fitted narrow-scan O1 s spectra revealed that O1 s was composed of three components. The AZO thin films annealed under vacuum appeared to have a higher proportion of medium binding energy which correspond to O2- ions in the oxygen-deficient regions within the ZnO matrix, and have a lower proportion of high binding energy component which correspond to loosely bound chemisorbed oxygen. It believed that the oxygen vacancies and chemisorbed oxygen of the films played an important role in the electrical conductance. The carrier concentration increased with the formation of oxygen vacancies. The Hall mobility increased with desorption of the loosely bound oxygen.

  9. Ferromagnetic semiconductor nanoclusters: Co-doped Cu2O

    NASA Astrophysics Data System (ADS)

    Antony, Jiji; Qiang, You; Faheem, Muhammad; Meyer, Daniel; McCready, David E.; Engelhard, Mark H.

    2007-01-01

    5% Co-doped cuprous oxide dilute magnetic semiconducting cluster film composed of two different sizes of crystalline nanoclusters, prepared using sputtering-aggregation technique is found to be ferromagnetic at 400K. With the increase in average crystallite size from 4.2to8nm, the coercivity increased. Magnetic field up to 2T is applied and saturation magnetization is achieved at 3kOe field in both cases. Cu2O phase is observed from cluster film deposited on Si wafer when analyzed using x-ray diffraction. Co in Cu2O host reveals a +2 oxidation state via x-ray photoelectron spectroscopy. Positive magnetoresistance from samples exhibits a temperature dependent decrease.

  10. Tuning the metal-insulator transition via epitaxial strain and Co doping in NdNiO{sub 3} thin films grown by polymer-assisted deposition

    SciTech Connect

    Yao, Dan; Shi, Lei Zhou, Shiming; Liu, Haifeng; Zhao, Jiyin; Li, Yang; Wang, Yang

    2016-01-21

    The epitaxial NdNi{sub 1-x}Co{sub x}O{sub 3} (0 ≤ x ≤ 0.10) thin films on (001) LaAlO{sub 3} and (001) SrTiO{sub 3} substrates were grown by a simple polymer-assisted deposition technique. The co-function of the epitaxial strain and Co doping on the metal-insulator transition in perovskite nickelate NdNiO{sub 3} thin films is investigated. X-ray diffraction and scanning electron microscopy reveal that the as-prepared thin films exhibit good crystallinity and heteroepitaxy. The temperature dependent resistivities of the thin films indicate that both the epitaxial strain and Co doping lower the metal-insulator (MI) transition temperature, which can be treated as a way to tune the MI transition. Furthermore, under the investigated Co-doping levels, the MI transition temperature (T{sub MI}) shifts to low temperatures with Co content increasing under both compressive and tensile strain, and the more distinction is in the former situation. When x is increased up to 0.10, the insulating phase is completely suppressed under the compressive strain. With the strain increases from compression to tension, the resistivities are enhanced both in the metal and insulating regions. However, the Co-doping effect on the resistivity shows a more complex situation. As Co content x increases from zero to 0.10, the resistivities are reduced both in the metal and insulating regions under the tensile strain, whereas they are enhanced in the high-temperature metal region under the compressive strain. Based on the temperature dependent resistivity in the metal regions, it is suggested that the electron-phonon coupling in the films becomes weaker with the increase of both the strain and Co-doping.

  11. Room Temperature Growth of Al-Doped ZnO Thin Films by Reactive DC Sputtering Technique with Metallic Target

    NASA Astrophysics Data System (ADS)

    Hasuike, Noriyuki; Nishio, Koji; Kisoda, Kenji; Harima, Hiroshi

    2013-01-01

    We prepared Al-deopd ZnO (AZO) films by reactive DC sputtering method using metallic target at room temperature. All the tested AZO films (0<[Al]<8.9%) with the transmittance above 85% in visible region were successfully grown on quartz substrate. All the AZO films have wurtzite structure with no impurity phase. The AZO films with [Al]<2.9% have the preferential orientation in c-axis direction, and the orientation became indistinct as increasing in Al content. In the optical measurement, the absorption edge was shifted from 3.30 to 3.66 eV due to Burstein-Moss effect, and the electron densities were roughly estimated at 2.5×1019 to 1.5×1021 cm-3, respectively. On the other hand, the high transmittance in infrared region suggested low electron mobility. Since this gives rise to the high electric resistivity, the further improvements and optimization of the growth conditions are required for the realization of AZO based transparent conductive.

  12. Dopant-induced bandgap shift in Al-doped ZnO thin films prepared by spray pyrolysis

    NASA Astrophysics Data System (ADS)

    Hung-Chun Lai, Henry; Basheer, Tahseen; Kuznetsov, Vladimir L.; Egdell, Russell G.; Jacobs, Robert M. J.; Pepper, Michael; Edwards, Peter P.

    2012-10-01

    A series of 1 at. % Al-doped ZnO (AZO) films were deposited onto glass substrates by a spray pyrolysis technique. We find that the observed blue shift in the optical bandgap of 1% AZO films is dominated by the Burstein Moss effect. The Fermi level for an 807 nm thick AZO film rose by some 0.16 eV with respect to the edge of the conduction band. By controlling the film thickness, all AZO films exhibit the same lattice strain values. The influence of strain-induced bandgap shift was excluded by selecting films with nearly the same level of bandgap volume-deformation potentials, and the differences in out-plain strain and in-plain stress remained effectively constant.

  13. Structural, optical, morphological and electrical properties of undoped and Al-doped ZnO thin films prepared using sol—gel dip coating process

    NASA Astrophysics Data System (ADS)

    Boukhenoufa, N.; Mahamdi, R.; Rechem, D.

    2016-11-01

    In this work, sol—gel dip-coating technique was used to elaborate ZnO pure and ZnO/Al films. The impact of Al-doped concentration on the structural, optical, surface morphological and electrical properties of the elaborated samples was investigated. It was found that better electrical and optical performances have been obtained for an Al concentration equal to 5%, where the ZnO thin films exhibit a resistivity value equal to 1.64104 Ω·cm. Moreover, highest transparency has been recorded for the same Al concentration value. The obtained results from this investigation make the developed thin film structure a potential candidate for high optoelectronic performance applications.

  14. Dynamics of iron-acceptor-pair formation in co-doped silicon

    SciTech Connect

    Bartel, T.; Gibaja, F.; Graf, O.; Gross, D.; Kaes, M.; Heuer, M.; Kirscht, F.; Möller, C.; Lauer, K.

    2013-11-11

    The pairing dynamics of interstitial iron and dopants in silicon co-doped with phosphorous and several acceptor types are presented. The classical picture of iron-acceptor pairing dynamics is expanded to include the thermalization of iron between different dopants. The thermalization is quantitatively described using Boltzmann statistics and different iron-acceptor binding energies. The proper understanding of the pairing dynamics of iron in co-doped silicon will provide additional information on the electronic properties of iron-acceptor pairs and may become an analytical method to quantify and differentiate acceptors in co-doped silicon.

  15. Near infrared ray annealing effects on the properties of Al-doped ZnO thin films prepared by spin-coating method.

    PubMed

    Jun, Min-Chul; Park, Sang-Uk; Chae, Moon-Soon; Shin, Dong-Jin; Ha, Jae-Geun; Koo, Sang-Mo; Lee, Kyung-Ju; Moon, Byung-Moo; Song, Chi-Young; Koh, Jung-Hyuk

    2013-09-01

    In this research, we will present Al doped ZnO thin films for transparent conducting oxide applications. Aluminum doped zinc oxide (AZO) thin films have been deposited on the glass substrates by sol-gel spin-coating method using zinc acetate dehydrate (Zn(CH3COO)2 2H2O) and aluminum chloride hexahydrate (AlCl3 x 6H2O) as cation sources. In this study, we investigated the effects of near infrared ray (NIR) annealing on the structural, optical and electrical characteristics of the AZO thin films. The experimental results showed that AZO thin films have a hexagonal wurtzite crystal structure and had a good transmittance higher than 85% within the visible wavelength region. It was also found that the additional energy of NIR helps to improve the electrical properties of Al doped ZnO transparent conducting oxides.

  16. Effect of co doping to the optical properties of ZnO:Co Thin films deposited on glass substrate by sol-gel spray coating technique

    NASA Astrophysics Data System (ADS)

    Marito Siagian, Sinta; Sutanto, Heri; Permatasari, Anes

    2017-01-01

    This study aims are to analyze the effect of cobalt doping concentration to the optical properties ZnO:Co thin films deposited by using sol-gel spray coating technique. Deposition of ZnO and ZnO:Co thin films has been successfully formed on a glass substrate using sol-gel method of spray coating technique with a variation of doping Co as much as 3%, 5%, 7%, 9%, and 11%. Solution of ZnO:Co synthesized by mixing zinc acetate dehydrate (Zn (COOCH3)2.2H2O into a isopropanol ((CH3)2CHOH) then monoethanolamine (MEA) and cobalt nitrate are added as a dopant at room temperature, then ZnO:Co sprayed on a glass substrate that has been heated at a temperature of 450°C. A thin film further characterized using spectrophotometer Uv-Vis to determine the value of absorbance and transmittance. Energy band gap was determined by using tauc plot that uses the absorbance value. The results show that there has been a difference in the value of the Energy band gap of ZnO with and without of Co doping. The addition of Co doping causes the decrease of small energy band gap. The magnitude of the energy band gap of thin films of ZnO is 3.337 eV and ZnO:Co 3% is 3.129 eV. Thin film that has narrower band gap was applied for material photocatalyst

  17. Ab initio studies of magnetic anisotropy energy in highly Co-doped ZnO

    NASA Astrophysics Data System (ADS)

    Łusakowski, A.; Szuszkiewicz, W.

    2017-03-01

    Density functional theory (DFT) calculations of the energy of magnetic anisotropy for diluted magnetic semiconductor (Zn,Co)O were performed using OpenMX package with fully relativistic pseudopotentials. The analysis of the band spin-orbit interaction and the magnetic ion's surrounding on magnetic anisotropy have been provided. As a result, the calculations show that the magnetic anisotropy in (Zn,Co)O solid solution, mainly of the single ion anisotropy type has been caused by Co ions.

  18. Effect of Cobalt Concentration and Oxygen Vacancy on Magnetism of Co Doped ZnO Nanorods.

    PubMed

    Li, Congli; Che, Ping; Sun, Changyan; Li, Wenjun

    2016-03-01

    Zn(1-x)Co(x)O (x = 0-0.07) single-crystalline nanorods were prepared by a modified microemulsion route. The crystalline structure, morphology, optical, and hysteresis loop at low and room temperature of as-prepared materials were characterized by XRD, TEM, PL spectra, and magnetic measurement respectively. The nanorods are 80-250 nm in diameter and about 3 μm in length. X-ray diffraction data, TEM images confirm that the materials synthesized in optimal conditions are ZnO:Co single crystalline solid solution without any impurities related to Co. The PL spectra show that the ferromagnetic samples exhibit strong Zn interstitials and oxygen vacancy emission indicating defects may stabilize ferromagnetic order in the obtained diluted magnetic semiconductors. Magnetic measurements show that the Zn(1-x)Co(x)O nanorods exist obvious ferromagnetic characteristics with T(c) above 300 K. M(s) and coercivities first increase and then decrease with dopant concentration increasing, reaching the highest for 3% doping level. The structural and magnetic properties of these samples support the hypothesis that the FM of DMS nanorods is due to a defect mediated mechanism instead of cobalt nanoclusters and carrier mediated.

  19. Tailoring the refractive index of aluminum doped zinc oxide thin films by co-doping with titanium

    NASA Astrophysics Data System (ADS)

    Wei, Tiefeng; Lan, Pinjun; Yang, Ye; Zhang, Xianpeng; Tan, Ruiqin; Li, Yong; Song, Weijie

    2012-12-01

    The refractive index of transparent conductive oxides has a direct effect on the transmission of lights into thin film solar cells. Here we report the study of improving the refractive index of aluminum doped zinc oxide through titanium co-doping. The Al-Ti co-doped zinc oxide (ATZO) thin films with different Ti doping concentration were deposited on glass substrates by radio frequency magnetron sputtering with ATZO targets in an argon atmosphere. The structural, optical and electrical properties of the thin films were investigated using X-ray diffraction, ultraviolet-visible-near-infrared spectroscopy and hall measurements, respectively. The results showed that the as-deposited thin films were all textured along c-axis and perpendicular to the surface of substrate. The average transmittance in the visible region were more than 80% for all the ATZO thin films. The minimum resistivity of the obtained ATZO (1 wt% TiO2 doping) thin films were 2.6 × 10-3 Ω cm and 1.4 × 10-3 Ω cm before and after annealing in vacuum, respectively. The refractive index of the thin films (at λ0 = 550 nm) increased from 1.91 to 2.05 as the TiO2 content increased from 0 wt% to 3 wt%.

  20. Effect of aging under ambient conditions on the optical properties of Al-doped ZnO thin films deposited by direct current sputtering

    NASA Astrophysics Data System (ADS)

    Barhoumi, A.; Leroy, G.; Duponchel, B.; Gest, J.; Guermazi, S.

    2017-01-01

    Transparent and conductive Al-doped ZnO (AZO) thin films were deposited on a glass substrate by direct current sputtering. In a previous study, we noted the influence of time on structural and electrical characteristics of films. In the present paper, the effect of a two-year aging under ambient conditions on the optical properties was investigated. A global improvement of the optical properties of AZO thin films was observed. The optical transmittance spectra revealed a high transmittance more than 90% in the Vis-NIR regions and a high absorption in the ultraviolet range. It is assumed that the crystallinity segregation leads to the decrease of optical scattering. The results from the optical measurements showed a reorganization of the structure leading to the degradation of the structural homogeneity. Nevertheless, the evolution of the figure of merit shows that Al-doped ZnO is a good candidate for the manufacturing and the commercialization of transparent conducting oxide devices.

  1. Selective growth of catalyst-free ZnO nanowire arrays on Al:ZnO for device application

    SciTech Connect

    Chung, T. F.; Luo, L. B.; He, Z. B.; Leung, Y. H.; Shafiq, I.; Yao, Z. Q.; Lee, S. T.

    2007-12-03

    Vertically aligned ZnO nanowire (NW) arrays have been synthesized selectively on patterned aluminum-doped zinc oxide (AZO) layer deposited on silicon substrates without using any metal catalysts. The growth region was defined by conventional photolithography with an insulating template. Careful control of the types of template materials and growth conditions allows good alignment and growth selectivity for ZnO NW arrays. Sharp ultraviolet band-edge peak observed in the photoluminescence spectra of the patterned ZnO NW arrays reveals good optical qualities. The current-voltage characteristics of ZnO NWs/AZO/p-Si device suggest that patterned and aligned ZnO NW arrays on AZO may be used in optoelectronic devices.

  2. Influence of electron beam irradiation on nonlinear optical properties of Al doped ZnO thin films for optoelectronic device applications in the cw laser regime

    NASA Astrophysics Data System (ADS)

    Antony, Albin; Pramodini, S.; Poornesh, P.; Kityk, I. V.; Fedorchuk, A. O.; Sanjeev, Ganesh

    2016-12-01

    We present the studies on third-order nonlinear optical properties of Al doped ZnO thin films irradiated with electron beam at different dose rate. Al doped ZnO thin films were deposited on a glass substrate by spray pyrolysis deposition technique. The thin films were irradiated using the 8 MeV electron beam from microtron ranging from 1 kG y to 5 kG y. Nonlinear optical studies were carried out by employing the single beam Z-scan technique to determine the sign and magnitude of absorptive and refractive nonlinearities of the irradiated thin films. Continuous wave He-Ne laser operating at 633 nm was used as source of excitation. The open aperture Z-scan measurements indicated the sample displays reverse saturable absorption (RSA) process. The negative sign of the nonlinear refractive index n2 was noted from the closed aperture Z-scan measurements indicates, the films exhibit self-defocusing property due to thermal nonlinearity. The third-order nonlinear optical susceptibility χ(3) varies from 8.17 × 10-5 esu to 1.39 × 10-3 esu with increase in electron beam irradiation. The present study reveals that the irradiation of electron beam leads to significant changes in the third-order optical nonlinearity. Al doped ZnO displays good optical power handling capability with optical clamping of about ∼5 mW. The irradiation study endorses that the Al doped ZnO under investigation is a promising candidate photonic device applications such as all-optical power limiting.

  3. Recombination luminescence and trap levels in undoped and Al-doped ZnO thin films on quartz and GaSe (0 0 0 1) substrates

    SciTech Connect

    Evtodiev, I.; Caraman, I.; Leontie, L.; Rusu, D.-I.; Dafinei, A.; Nedeff, V.; Lazar, G.

    2012-03-15

    Highlights: Black-Right-Pointing-Pointer ZnO films on GaSe create electron trapping states and PL recombination levels. Black-Right-Pointing-Pointer Zn and Al diffusion in GaSe produces low-energy widening of its PL emission. Black-Right-Pointing-Pointer ZnO:Al films on GaSe lamellas are suitable for gas-discharge lamp applications. -- Abstract: Photoluminescence spectra of ZnO and ZnO:Al (1.00, 2.00 and 5.00 at.%) films on GaSe (0 0 0 1) lamellas and amorphous quartz substrates, obtained by annealing, at 700 K, of undoped and Al-doped metal films, are investigated. For all samples, the nonequilibrium charge carriers recombine by radiative band-to-band transitions with energy of 3.27 eV, via recombination levels created by the monoionized oxygen atoms, forming the impurity band laying in the region 2.00 - 2.70 eV. Al doping induces an additional recombination level at 1.13 eV above the top of the valence band of ZnO films on GaSe substrates. As a result of thermal diffusion of Zn and Al into the GaSe interface layer from ZnO:Al/GaSe heterojunction, electron trap levels located at 0.22 eV and 0.26 eV below the conduction band edge of GaSe, as well as a deep recombination level, responsible for the luminescent emission in the region 1.10 - 1.40 eV, are created.

  4. Evolution of Metallic Conductivity in Epitaxial ZnO Thin Films on Systematic Al Doping

    NASA Astrophysics Data System (ADS)

    Chinta, P. V.; Lozano, O.; Wadekar, P. V.; Hsieh, W. C.; Seo, H. W.; Yeh, S. W.; Liao, C. H.; Tu, L. W.; Ho, N. J.; Zhang, Y. S.; Pang, W. Y.; Lo, Ikai; Chen, Q. Y.; Chu, W. K.

    2017-04-01

    The metal-like behaviors and metal-semiconductor transition (MST) of highly conducting Zn1- x Al x O ( x = 1 at.% to 10 at.%) thin films deposited by cosputtering on a-Al2O3 have been investigated. The temperature-dependent transport properties reveal that the Zn1- x Al x O films were highly degenerate. The MST temperature ( T MST) varied from 190 K to 260 K with Al doping from x = 2 at.% to 10 at.%. A simple degenerate band model is used to explain the observed shift in the metal-like behaviors upon Al doping. An empirical approach is used to analyze the resistivity functional below TMST, taking into account the contributions from both the weak localization and Coulomb interactions in explaining the MST. Analysis by least-square fittings of measured data shows excellent agreement. The optical bandgap increases with carrier concentration as n Hall 2/3 , which is interpreted as the Burstein-Moss shift for a nonparabolic effective mass. Such nonparabolicity is scrutinized by quantitative comparisons of the plasma edge values n optical versus the n Hall values.

  5. Evolution of Metallic Conductivity in Epitaxial ZnO Thin Films on Systematic Al Doping

    NASA Astrophysics Data System (ADS)

    Chinta, P. V.; Lozano, O.; Wadekar, P. V.; Hsieh, W. C.; Seo, H. W.; Yeh, S. W.; Liao, C. H.; Tu, L. W.; Ho, N. J.; Zhang, Y. S.; Pang, W. Y.; Lo, Ikai; Chen, Q. Y.; Chu, W. K.

    2016-11-01

    The metal-like behaviors and metal-semiconductor transition (MST) of highly conducting Zn1-x Al x O (x = 1 at.% to 10 at.%) thin films deposited by cosputtering on a-Al2O3 have been investigated. The temperature-dependent transport properties reveal that the Zn1-x Al x O films were highly degenerate. The MST temperature (T MST) varied from 190 K to 260 K with Al doping from x = 2 at.% to 10 at.%. A simple degenerate band model is used to explain the observed shift in the metal-like behaviors upon Al doping. An empirical approach is used to analyze the resistivity functional below TMST, taking into account the contributions from both the weak localization and Coulomb interactions in explaining the MST. Analysis by least-square fittings of measured data shows excellent agreement. The optical bandgap increases with carrier concentration as n {Hall/2/3}, which is interpreted as the Burstein-Moss shift for a nonparabolic effective mass. Such nonparabolicity is scrutinized by quantitative comparisons of the plasma edge values n optical versus the n Hall values.

  6. Nonequilibrium-Plasma-Synthesized ZnO Nanocrystals with Plasmon Resonance Tunable via Al Doping and Quantum Confinement.

    PubMed

    Greenberg, Benjamin L; Ganguly, Shreyashi; Held, Jacob T; Kramer, Nicolaas J; Mkhoyan, K Andre; Aydil, Eray S; Kortshagen, Uwe R

    2015-12-09

    Metal oxide semiconductor nanocrystals (NCs) exhibit localized surface plasmon resonances (LSPRs) tunable within the infrared (IR) region of the electromagnetic spectrum by vacancy or impurity doping. Although a variety of these NCs have been produced using colloidal synthesis methods, incorporation and activation of dopants in the liquid phase has often been challenging. Herein, using Al-doped ZnO (AZO) NCs as an example, we demonstrate the potential of nonthermal plasma synthesis as an alternative strategy for the production of doped metal oxide NCs. Exploiting unique, thoroughly nonequilibrium synthesis conditions, we obtain NCs in which dopants are not segregated to the NC surfaces and local doping levels are high near the NC centers. Thus, we achieve overall doping levels as high as 2 × 10(20) cm(-3) in NCs with diameters ranging from 12.6 to 3.6 nm, and for the first time experimentally demonstrate a clear quantum confinement blue shift of the LSPR energy in vacancy- and impurity-doped semiconductor NCs. We propose that doping of central cores and heavy doping of small NCs are achievable via nonthermal plasma synthesis, because chemical potential differences between dopant and host atoms-which hinder dopant incorporation in colloidal synthesis-are irrelevant when NC nucleation and growth proceed via irreversible interactions among highly reactive gas-phase ions and radicals and ligand-free NC surfaces. We explore how the distinctive nucleation and growth kinetics occurring in the plasma influences dopant distribution and activation, defect structure, and impurity phase formation.

  7. Local probe microscopic studies on Al-doped ZnO: Pseudoferroelectricity and band bending at grain boundaries

    SciTech Connect

    Kumar, Mohit; Basu, Tanmoy; Som, Tapobrata

    2016-01-07

    In this paper, based on piezoforce measurements, we show the presence of opposite polarization at grains and grain boundaries of Al-doped ZnO (AZO). The polarization can be flipped by 180° in phase by switching the polarity of the applied electric field, revealing the existence of nanoscale pseudoferroelectricity in AZO grown on Pt/TiO{sub 2}/SiO{sub 2}/Si substrate. We also demonstrate an experimental evidence on local band bending at grain boundaries of AZO films using conductive atomic force microscopy and Kelvin probe force microscopy. The presence of an opposite polarization at grains and grain boundaries gives rise to a polarization-driven barrier formation at grain boundaries. With the help of conductive atomic force microscopy, we show that the polarization-driven barrier along with the defect-induced electrostatic potential barrier account for the measured local band bending at grain boundaries. The present study opens a new avenue to understand the charge transport in light of both polarization and electrostatic effects.

  8. Fabrication of deep-profile Al-doped ZnO one- and two-dimensional lattices as plasmonic elements

    NASA Astrophysics Data System (ADS)

    Jensen, Flemming; Shkondin, Evgeniy; Takayama, Osamu; Larsen, Pernille V.; Mar, Mikkel D.; Malureanu, Radu; Lavrinenko, Andrei V.

    2016-09-01

    In this work, we report on fabrication of deep-profile one- and two-dimensional lattices made from Al-doped ZnO (AZO). AZO is considered as an alternative plasmonic material having the real part of the permittivity negative in the near infrared range. The exact position of the plasma frequency of AZO is doping concentration dependent, allowing for tuning possibilities. In addition, the thickness of the AZO film also affects its material properties. Physical vapor deposition techniques typically applied for AZO coating do not enable deep profiling of a plasmonic structure. Using the atomic layer deposition technique, a highly conformal deposition method, allows us to fabricate high-aspect ratio structures such as one-dimensional lattices with a period of 400 nm and size of the lamina of 200 nm in width and 3 μm in depth. Thus, our structures have an aspect ratio of 1:15 and are homogeneous on areas of 2×2 cm2 and more. We also produce two-dimensional arrays of circular nanopillars with similar dimensions. Instead of nanopillars hollow tubes with a wall thickness on demand from 20 nm up to a complete fill can be fabricated.

  9. Local probe microscopic studies on Al-doped ZnO: Pseudoferroelectricity and band bending at grain boundaries

    NASA Astrophysics Data System (ADS)

    Kumar, Mohit; Basu, Tanmoy; Som, Tapobrata

    2016-01-01

    In this paper, based on piezoforce measurements, we show the presence of opposite polarization at grains and grain boundaries of Al-doped ZnO (AZO). The polarization can be flipped by 180° in phase by switching the polarity of the applied electric field, revealing the existence of nanoscale pseudoferroelectricity in AZO grown on Pt/TiO2/SiO2/Si substrate. We also demonstrate an experimental evidence on local band bending at grain boundaries of AZO films using conductive atomic force microscopy and Kelvin probe force microscopy. The presence of an opposite polarization at grains and grain boundaries gives rise to a polarization-driven barrier formation at grain boundaries. With the help of conductive atomic force microscopy, we show that the polarization-driven barrier along with the defect-induced electrostatic potential barrier account for the measured local band bending at grain boundaries. The present study opens a new avenue to understand the charge transport in light of both polarization and electrostatic effects.

  10. Highly transparent and conductive Al-doped ZnO nanoparticulate thin films using direct write processing.

    PubMed

    Vunnam, S; Ankireddy, K; Kellar, J; Cross, W

    2014-05-16

    Solution processable Al-doped ZnO (AZO) thin films are attractive candidates for low cost transparent electrodes. We demonstrate here an optimized nanoparticulate ink for the fabrication of AZO thin films using scalable, low-cost direct write processing (ultrasonic spray deposition) in air at atmospheric pressure. The thin films were made via thermal processing of as-deposited films. AZO films deposited using the proposed nanoparticulate ink with further reducing in vacuum and rf plasma of forming gas exhibited optical transparency greater than 95% across the visible spectrum, and electrical resistivity of 0.5 Ω cm and it drops down to 7.0 × 10(-2) Ω cm after illuminating with UV light, which is comparable to commercially available tin doped indium oxide colloidal coatings. Various structural analyses were performed to investigate the influence of ink chemistry, deposition parameters, and annealing temperatures on the structural, optical, and electrical characteristics of the spray deposited AZO thin films. Optical micrographs confirmed the presence of surface defects and cracks using the AZO NPs ink without any additives. After adding N-(2-Aminoethyl)-3-aminopropylmethyldimethoxy silane to the ink, AZO films exhibited an optical transparency which was virtually identical to that of the plain glass substrate.

  11. NIR luminescence studies on Er3+:Yb3+ co-doped sodium telluroborate glasses for lasers and optical amplifer applications

    NASA Astrophysics Data System (ADS)

    Annapoorani, K.; Murthy, N. Suriya; Marimuthu, K.

    2016-05-01

    Er3+:Yb3+ co-doped Sodium telluroborate glasses were prepared with the chemical composition (49.5-x)B2O3+25TeO2+5Li2CO3+10ZnO+10NaF+0.5Er2O3+xYb2O3 (where x= 0.1, 0.5, 1.0 and 2.0 in mol %) following the melt quenching technique. With the addition of Yb3+ ions into Er3+ ions in the prepared glasses, the absorption cross-section values were found to increase due to the effective energy transfer from 2F5/2 level of Yb3+ ions to the 4I11/2 level of Er3+ ions. The fluorescence around 1550 nm correspond to the 4I13/2→4I15/2 transition was observed under 980 nm pumping. Among the present glasses, integrated intensity was found to be higher for 1.0 mol% Yb3+ ion glass. The parameters such as stimulated emission cross- section, Gain bandwidth and quantum efficiency of the 4I13/2→4I15/2 transition was found to be higher for the NTBE1.0Y glass and the same is suggested for potential NIR lasers and optical amplifier applications.

  12. Evolution of dielectric function of Al-doped ZnO thin films with thermal annealing: effect of band gap expansion and free-electron absorption.

    PubMed

    Li, X D; Chen, T P; Liu, Y; Leong, K C

    2014-09-22

    Evolution of dielectric function of Al-doped ZnO (AZO) thin films with annealing temperature is observed. It is shown that the evolution is due to the changes in both the band gap and the free-electron absorption as a result of the change of free-electron concentration of the AZO thin films. The change of the electron concentration could be attributed to the activation of Al dopant and the creation/annihilation of the donor-like defects like oxygen vacancy in the thin films caused by annealing.

  13. Effect of Co doping on structural, optical, magnetic and dielectric properties of Bi2Fe4O9

    NASA Astrophysics Data System (ADS)

    Mohapatra, S. R.; Sahu, B.; Kaushik, S. D.; Singh, A. K.

    2015-06-01

    Polycrystalline Bi2Fe4O9 and 2% Co doped Bi2Fe4O9 were prepared by solid state reaction route. X-ray diffraction (XRD) result reveals that there is no change in the crystal structure due to Co doping and the compound has orthorhombic structure. UV-visible spectroscopy confirms the decrease in band gap due Co doping. Zero field cooled magnetization measurement at 100 Oe magnetic field shows substantial decrease in the magnetic transition temperature. Room temperature frequency dependent dielectric permittivity at 1V DC bias shows ˜10% increase in Co doped sample with respect to pure Bi2Fe4O9.

  14. Interfacially Al-doped ZnO nanowires: greatly enhanced near band edge emission through suppressed electron-phonon coupling and confined optical field.

    PubMed

    Wu, Yiming; Dai, Yanmeng; Jiang, Shenlong; Ma, Chao; Lin, Yue; Du, Dongxue; Wu, Yukun; Ding, Huaiyi; Zhang, Qun; Pan, Nan; Wang, Xiaoping

    2017-04-05

    Aluminium (Al)-doped zinc oxide (ZnO) nanowires (NWs) with a unique core-shell structure and a Δ-doping profile at the interface were successfully grown using a combination of chemical vapor deposition re-growth and few-layer AlxOy atomic layer deposition. Unlike the conventional heavy doping which degrades the near-band-edge (NBE) luminescence and increases the electron-phonon coupling (EPC), it was found that there was an over 20-fold enhanced NBE emission and a notably-weakened EPC in this type of interfacially Al-doped ZnO NWs. Further experiments revealed a greatly suppressed nonradiative decay process and a much enhanced radiative recombination rate. By comparing the finite-difference time-domain simulation with the experimental results from intentionally designed different NWs, this enhanced radiative decay rate was attributed to the Purcell effect induced by the confined and intensified optical field within the interfacial layer. The ability to manipulate the confinement, transport and relaxation dynamics of ZnO excitons can be naturally guaranteed with this unique interfacial Δ-doping strategy, which is certainly desirable for the applications using ZnO-based nano-photonic and nano-optoelectronic devices.

  15. Structural, optical, magnetic and photocatalytic properties of Co doped CuS diluted magnetic semiconductor nanoparticles

    NASA Astrophysics Data System (ADS)

    Sreelekha, N.; Subramanyam, K.; Amaranatha Reddy, D.; Murali, G.; Ramu, S.; Rahul Varma, K.; Vijayalakshmi, R. P.

    2016-08-01

    Pristine and Co doped covellite CuS nanoparticles were synthesized in aqueous solution by facile chemical co-precipitation method with Ethylene Diamine Tetra Acetic Acid (EDTA) as a stabilizing agent. EDAX measurements confirmed the presence of Co in the CuS host lattice. Hexagonal crystal structure of pure and Co doped CuS nanoparticles were authenticated by XRD patterns. TEM images indicated that sphere-shape of nanoparticles through a size ranging from 5 to 8 nm. The optical absorption edge moved to higher energies with increase in Co concentration as indicated by UV-vis spectroscopy. Magnetic measurements revealed that bare CuS sample show sign of diamagnetic character where as in Co doped nanoparticles augmentation of room temperature ferromagnetism was observed with increasing doping precursor concentrations. Photocatalytic performance of the pure and Co doped CuS nanoparticles were assessed by evaluating the degradation rate of rhodamine B solution under sun light irradiation. The 5% Co doped CuS nanoparticles provide evidence for high-quality photocatalytic activity.

  16. The Influence of Spark Plasma Sintering Temperature on the Microstructure and Thermoelectric Properties of Al,Ga Dual-Doped ZnO

    NASA Astrophysics Data System (ADS)

    Han, Li; Hung, Le Thanh; van Nong, Ngo; Pryds, Nini; Linderoth, Søren

    2013-07-01

    ZnO dual-doped with Al and Ga was prepared by spark plasma sintering using different sintering temperatures. The microstructural evolution and thermoelectric properties of the samples were investigated in detail. The samples obtained with sintering temperature above 1223 K had higher relative densities and higher electronic conductivity than the sample sintered at 1073 K. These results were supported by the solid-state reaction completion rate, which suggested that sintering temperature above 1223 K would be preferable for complete solid-state reaction of the samples. The sintering mechanism of ZnO particles and microstructure evolution at different sintering temperatures were investigated by simulation of the self-Joule-heating effect of the individual particles.

  17. Enhanced Visible Light Photocatalytic Activity of ZnO Nanowires Doped with Mn2+ and Co2+ Ions

    PubMed Central

    Li, Wei; Wang, Guojing; Chen, Chienhua; Liao, Jiecui; Li, Zhengcao

    2017-01-01

    In this research, ZnO nanowires doped with Mn2+ and Co2+ ions were synthesized through a facile and inexpensive hydrothermal approach, in which Mn2+ and Co2+ ions successfully substituted Zn2+ in the ZnO crystal lattice without changing the morphology and crystalline structure of ZnO. The atomic percentages of Mn and Co were 6.29% and 1.68%, respectively, in the doped ZnO nanowires. The photocatalytic results showed that Mn-doped and Co-doped ZnO nanowires both exhibited higher photocatalytic activities than undoped ZnO nanowires. Among the doped ZnO nanowires, Co-doped ZnO, which owns a twice active visible-light photocatalytic performance compared to pure ZnO, is considered a more efficient photocatalyst material. The enhancement of its photocatalytic performance originates from the doped metal ions, which enhance the light absorption ability and inhibit the recombination of photo-generated electron-hole pairs as well. The effect of the doped ion types on the morphology, crystal lattice and other properties of ZnO was also investigated. PMID:28336854

  18. Enhanced Visible Light Photocatalytic Activity of ZnO Nanowires Doped with Mn(2+) and Co(2+) Ions.

    PubMed

    Li, Wei; Wang, Guojing; Chen, Chienhua; Liao, Jiecui; Li, Zhengcao

    2017-01-19

    In this research, ZnO nanowires doped with Mn(2+) and Co(2+) ions were synthesized through a facile and inexpensive hydrothermal approach, in which Mn(2+) and Co(2+) ions successfully substituted Zn(2+) in the ZnO crystal lattice without changing the morphology and crystalline structure of ZnO. The atomic percentages of Mn and Co were 6.29% and 1.68%, respectively, in the doped ZnO nanowires. The photocatalytic results showed that Mn-doped and Co-doped ZnO nanowires both exhibited higher photocatalytic activities than undoped ZnO nanowires. Among the doped ZnO nanowires, Co-doped ZnO, which owns a twice active visible-light photocatalytic performance compared to pure ZnO, is considered a more efficient photocatalyst material. The enhancement of its photocatalytic performance originates from the doped metal ions, which enhance the light absorption ability and inhibit the recombination of photo-generated electron-hole pairs as well. The effect of the doped ion types on the morphology, crystal lattice and other properties of ZnO was also investigated.

  19. Tunable positive magnetoresistance effect of Co-doped amorphous carbon films

    NASA Astrophysics Data System (ADS)

    Jiang, Y. C.; Wu, Z. P.; Bao, W.; Xu, S. J.; Gao, J.

    2012-04-01

    Co-doped amorphous carbon (a-C:Co) films were deposited on n-type Si substrates by pulsed-laser deposition method. A positive magnetoresistance (PMR) effect has been observed after Co doped into a-C films. Such a PMR is tuned by the bias voltage and reaches a peak at a particular voltage, as observed from the Current-voltage relations of the a-C:Co/Si junctions at various magnetic fields. MR-H characteristics were further studied at the temperatures of 65 K, which showed that under the reverse electric field the a-C:Co/Si junctions had a colossal PMR (over 100%). Raman spectra results demonstrate that Co doping favors the formation of graphitic sp2 sites. The mechanism of the PMR effect is attributed to the interactions between the applied magnetic field and Co ions, which leads to the transition from sp2 sites to sp3 sites and increase the resistance.

  20. CO-doping effects on the transport and magnetic properties of FeTe

    NASA Astrophysics Data System (ADS)

    Zhu, Yanglin; Li, Li; Yang, Zhaorong; Zhang, Zhitao; Yuan, Bin; Chen, Jun; Du, Haifeng; Sun, Yuping; Zhang, Yuheng

    2016-01-01

    Here we report a systematic investigation of Co-doping effects on the magnetism and transport properties of Fe1+yTe single crystals. It is found that the anti-ferromagnetism transition temperature decreases upon Co doping, and a spin-glass like behavior emerges at low temperature. With substituting more than x=0.09 Co for Fe, both the metallic behavior and the structural transition disappear, but the density of states at Fermi-level does not change significantly. These results suggest that Co doping does not act as carrier doping but is more likely to bring in random magnetic scatters. In addition, the analysis of RH measurements reveals that the Fermi-level reconstruction is not closely related to the long rang AFM transition, which further supports for the local moment picture with frustrated character in dominating the AFM ground state of Fe1+yTe.

  1. Electrically tunable diffraction efficiency from gratings in Al-doped ZnO

    NASA Astrophysics Data System (ADS)

    George, David; Li, Li; Lowell, David; Ding, Jun; Cui, Jingbiao; Zhang, Hualiang; Philipose, Usha; Lin, Yuankun

    2017-02-01

    Transparent conducting aluminum-doped zinc oxide (AZO) can be used as part of an active plasmonic device due to its electrically tunable permittivity, which is accomplished by changing the carrier concentration with electrical biasing. In this letter, we report a continuous electrical tuning of diffraction efficiency from AZO gratings in the visible range (specifically 532 nm) when the AZO is under bias voltages between -1 V and -3.5 V. The carrier concentration in AZO under negative bias has been measured and simulated. The diffraction efficiency changes have been explained by the carrier concentration variation and induced complex refractive index change at the Al2O3 and AZO interface. The reported results can lead toward the application of post-fabrication tuning of optoelectronic devices using AZO.

  2. Nitrogen-fluorine co-doped titania inverse opals for enhanced solar light driven photocatalysis.

    PubMed

    Rahul, T K; Sandhyarani, N

    2015-11-21

    Three dimensionally ordered nitrogen-fluorine (N-F) co-doped TiO2 inverse opals (IOs) were fabricated by templating with polystyrene (PS) colloidal photonic crystals (CPCs) by infiltration. During preparation, the TiO2 precursor was treated with a mixture of nitric acid and trifluoroacetic acid to facilitate N-F co-doping into the TiO2 lattice. Enhanced solar light absorption was observed in the samples as a consequence of the red shift in the electronic band gap of TiO2 due to N-F co-doping. The photonic band gap (PBG) of these TiO2 IO films was tuned by varying the sphere size of the PS CPC templates. The as-prepared N-F co-doped TiO2 IO films were used as photocatalysts for the degradation of Rhodamine B (RhB) dye under solar light irradiation. A significant enhancement in the photocatalytic activity was observed in N-F co-doped TiO2 IO films prepared using PS spheres of 215 nm as a template, with the red edge of the PBG closer to the electronic band gap (EBG) of TiO2. 100% of the dye molecules were degraded within 2 minutes under direct solar irradiation, which is one of the fastest reaction times ever reported for RhB degradation in the presence of TiO2 photocatalysts. The N-F co-doped TiO2 IO film prepared using PS of 460 nm with its PBG centered at 695 nm also showed good photocatalytic activity. It was found that the IO films displayed improved photocatalytic activity in comparison to ordinary nanocrystalline (nc)-TiO2 films. The enhancement could be attributed to the bandgap scattering effect and the slow photon effect, leading to a significant improvement in solar light harvesting.

  3. Nitrogen-fluorine co-doped titania inverse opals for enhanced solar light driven photocatalysis

    NASA Astrophysics Data System (ADS)

    Rahul, T. K.; Sandhyarani, N.

    2015-10-01

    Three dimensionally ordered nitrogen-fluorine (N-F) co-doped TiO2 inverse opals (IOs) were fabricated by templating with polystyrene (PS) colloidal photonic crystals (CPCs) by infiltration. During preparation, the TiO2 precursor was treated with a mixture of nitric acid and trifluoroacetic acid to facilitate N-F co-doping into the TiO2 lattice. Enhanced solar light absorption was observed in the samples as a consequence of the red shift in the electronic band gap of TiO2 due to N-F co-doping. The photonic band gap (PBG) of these TiO2 IO films was tuned by varying the sphere size of the PS CPC templates. The as-prepared N-F co-doped TiO2 IO films were used as photocatalysts for the degradation of Rhodamine B (RhB) dye under solar light irradiation. A significant enhancement in the photocatalytic activity was observed in N-F co-doped TiO2 IO films prepared using PS spheres of 215 nm as a template, with the red edge of the PBG closer to the electronic band gap (EBG) of TiO2. 100% of the dye molecules were degraded within 2 minutes under direct solar irradiation, which is one of the fastest reaction times ever reported for RhB degradation in the presence of TiO2 photocatalysts. The N-F co-doped TiO2 IO film prepared using PS of 460 nm with its PBG centered at 695 nm also showed good photocatalytic activity. It was found that the IO films displayed improved photocatalytic activity in comparison to ordinary nanocrystalline (nc)-TiO2 films. The enhancement could be attributed to the bandgap scattering effect and the slow photon effect, leading to a significant improvement in solar light harvesting.

  4. Transparent conducting impurity-doped ZnO thin films prepared using oxide targets sintered by millimeter-wave heating

    SciTech Connect

    Minami, Tadatsugu; Okada, Kenji; Miyata, Toshihiro; Nomoto, Juni-chi; Hara, Youhei; Abe, Hiroshi

    2009-07-15

    The preparation of transparent conducting impurity-doped ZnO thin films by both pulsed laser deposition (PLD) and magnetron sputtering deposition (MSD) using impurity-doped ZnO targets sintered with a newly developed energy saving millimeter-wave (28 GHz) heating technique is described. Al-doped ZnO (AZO) and V-co-doped AZO (AZO:V) targets were prepared by sintering with various impurity contents for 30 min at a temperature of approximately 1250 degree sign C in an air or Ar gas atmosphere using the millimeter-wave heating technique. The resulting resistivity and its thickness dependence obtainable in thin films prepared by PLD using millimeter-wave-sintered AZO targets were comparable to those obtained in thin films prepared by PLD using conventional furnace-sintered AZO targets; a low resistivity on the order of 3x10{sup -4} {Omega} cm was obtained in AZO thin films prepared with an Al content [Al/(Al+Zn) atomic ratio] of 3.2 at. % and a thickness of 100 nm. In addition, the resulting resistivity and its spatial distribution on the substrate surface obtainable in thin films prepared by rf-MSD using a millimeter-wave-sintered AZO target were almost the same as those obtained in thin films prepared by rf-MSD using a conventional powder AZO target. Thin films prepared by PLD using millimeter-wave-sintered AZO:V targets exhibited an improved resistivity stability in a high humidity environment. Thin films deposited with a thickness of approximately 100 nm using an AZO:V target codoped with an Al content of 4 at. % and a V content [V/(V+Zn) atomic ratio] of 0.2 at. % were sufficiently stable when long-term tested in air at 90% relative humidity and 60 degree sign C.

  5. Thickness Effect of Al-Doped ZnO Window Layer on Damp Heat Stability of CuInGaSe2 Solar Cells: Preprint

    SciTech Connect

    Pern, F. J.; Mansfield, L.; DeHart, C.; Glick, S. H.; Yan, F.; Noufi, R.

    2011-07-01

    We investigated the damp heat (DH) stability of CuInGaSe2 (CIGS) solar cells as a function of thickness of the Al-doped ZnO (AZO) window layer from the 'standard' 0.12 μm to a modest 0.50 μm over an underlying 0.10-μm intrinsic ZnO buffer layer. The CIGS cells were prepared with external electrical contact using fine Au wire to the tiny 'standard' Ni/Al (0.05 μm/3 μm) metal grid contact pads. Bare cell coupons and sample sets encapsulated in a specially designed, Al-frame test structure with an opening for moisture ingress control using a TPT backsheet were exposed to DH at 85oC and 85% relative humidity, and characterized by current-voltage (I-V), quantum efficiency (QE), and (electrochemical) impedance spectroscopy (ECIS). The results show that bare cells exhibited rapid degradation within 50-100 h, accompanied by film wrinkling and delamination and corrosion of Mo and AlNi grid, regardless of AZO thickness. In contrast, the encapsulated cells did not show film wrinkling, delamination, and Mo corrosion after 168 h DH exposure; but the trend of efficiency degradation rate showed a weak correlation to the AZO thickness.

  6. Suppression of boron-oxygen defects in Czochralski silicon by carbon co-doping

    SciTech Connect

    Wu, Yichao; Yu, Xuegong He, Hang; Chen, Peng; Yang, Deren

    2015-03-09

    We have investigated the influence of carbon co-doping on the formation of boron-oxygen defects in Czochralski silicon. It is found that carbon can effectively suppress the formation of boron-oxygen defects. Based on our experiments and first-principle theoretical calculations, it is believed that this effect is attributed to the formation of more energetically favorable carbon-oxygen complexes. Moreover, the diffusion of oxygen dimers in carbon co-doped silicon also becomes more difficult. All these phenomena should be associated with the tensile stress field induced by carbon doping in silicon.

  7. Highly (0001)-oriented Al-doped ZnO polycrystalline films on amorphous glass substrates

    NASA Astrophysics Data System (ADS)

    Nomoto, Junichi; Inaba, Katsuhiko; Osada, Minoru; Kobayashi, Shintaro; Makino, Hisao; Yamamoto, Tetsuya

    2016-09-01

    Very thin aluminum-doped zinc oxide (AZO) films with a well-defined (0001) orientation and a surface roughness of 0.357 nm were deposited on amorphous glass substrates at a temperature of 200 °C by radio frequency magnetron sputtering, which are promising, particularly in terms of orientation evolution, surface roughness, and carrier transport, as buffer layers for the subsequent deposition of highly (0001)-oriented AZO polycrystalline films of 490 nm thickness by direct current (DC) magnetron sputtering. Sintered AZO targets with an Al2O3 content of 2.0 wt. % were used. DC magnetron sputtered AZO films on bare glass substrates showed a mixed (0001) and the others crystallographic orientation, and exhibited a high contribution of grain boundary scattering to carrier transport, resulting in reduced Hall mobility. Optimizing the thickness of the AZO buffer layers to 10 nm led to highly (0001)-oriented bulk AZO films with a marked reduction in the above contribution, resulting in AZO films with improved Hall mobility together with enhanced carrier concentration. The surface morphology and point defect density were also improved by applying the buffer layers, as shown by atomic force microscopy and Raman spectroscopy, respectively.

  8. Structural and magnetic properties of Ni/Mn codoped ZnO nanoparticles

    NASA Astrophysics Data System (ADS)

    Vijayaprasath, G.; Murugan, R.; Asaithambi, S.; Sakthivel, P.; Mahalingam, T.; Ravi, G.

    2016-05-01

    We report systematic studies of the magnetic properties of Ni and Mn co-doped ZnO nanoparticles prepared by co-precipitation method. Structural characterization reveals that Ni and Mn ions substituted into ZnO lattices without any secondary phases formation. Photoluminescence and Raman spectra shows that the Ni/Mn were doped into the ZnO lattice resulting slight shift in near-band-edge emission. Moreover, the novel Raman peak at 586 cm-1 indicates two kinds of cations via doping that could affect the local polarizability. Magnetic measurements of the nanoparticles exhibits ferromagnetic behavior at room-temperature.

  9. Single and combined effects of aluminum (Al2O3) and zinc (ZnO) oxide nanoparticles in a freshwater fish, Carassius auratus.

    PubMed

    Benavides, María; Fernández-Lodeiro, Javier; Coelho, Pedro; Lodeiro, Carlos; Diniz, Mário S

    2016-12-01

    The increasing use of nanoparticles (NPs) worldwide has raised some concerns about their impact on the environment. The aim of the study was to assess the toxicity of metal oxide nanoparticles, singly or combined, in a freshwater fish (Carassius auratus). The fish were exposed for 7, 14, and 21 days to different concentrations of NPs (10 μg Al2O3.L(-1), 10 μg ZnO.L(-1), 10 μg Al2O3.L(-1) plus 10 μg ZnO.L(-1), 100 μg Al2O3.L(-1), 100 μg ZnO.L(-1), and 100 μg Al2O3.L(-1) plus 100 μg ZnO.L(-1)). At the end of each exposure period, antioxidant enzyme activity (catalase, glutathione-S-transferase, and superoxide dismutase), lipid peroxidation, and histopathology were assessed in the gills and livers of C. auratus. The results show an increase in catalase (CAT) and superoxide dismutase (SOD) activity in the gills and livers of fish, especially after 14 days of exposure to single and combined NPs, followed by a reduction at 21 days. An increase in glutathione S-transferase (GST) was observed in gills after 7 days for all tested NP concentrations (single and combined); while in livers, a significant increase was determined after 14 days of exposure to 100 μg.L(-1) of both single ZnO and Al2O3 NPs. Lipid peroxidation (LPO) significantly increased in gills after 7 days of exposure to 100 μg.L(-1) Al2O3 NPs (single or combined). In livers, LPO increased significantly after 7 days of exposure to all tested concentrations of both single ZnO and Al2O3 (except for 10 μg Al2O3.L(-1)), and after 14 days of exposure to ZnO (10 and 100 μg.L(-1)) and Al2O3 (100 μg.L(-1)). The results from histological observations suggest that exposure to metal oxide NPs affected both livers and gills, presenting alterations such as gill hyperplasia and liver degeneration. However, the most pronounced effects were found in gills. In general, this study shows that the tested NPs, single or combined, are capable of causing sub-lethal effects on C. auratus, but when

  10. Arrays of ZnO/AZO (Al-doped ZnO) nanocables: a higher open circuit voltage and remarkable improvement of efficiency for CdS-sensitized solar cells.

    PubMed

    Deng, Jianping; Wang, Minqiang; Liu, Jing; Song, Xiaohui; Yang, Zhi

    2014-03-15

    Photoelectrode of nanocables (NCs) structure of ZnO nanowires (NWs) coated with Al-doped ZnO (AZO) shells was investigated for CdS quantum dots sensitized solar cells (QDSSCs). ZnO NWs serve as the frame for the preparation of AZO shells, in which electron transport more rapidly due to the more higher electron mobility of AZO (n-ZnO) than that of i-ZnO. AZO shells were assembled onto the surface of ZnO NWs via a spin-coating method. Optical band-gap of the ZnO/AZO films varies from 3.19 eV for pure ZnO to 3.25 eV for AZO (15%) depending on the Al-doping concentration. The PL intensity of AZO/ZnO, V(oc), J(sc) and η of the cells first increased and then decreased with the increase in the Al-doping (from 0% to 20%) and post-annealed temperature. Remarkably, the value of V(oc) can achieve above 0.8 V after Al-doping. The dark current and absorption spectrum provided direct evidence of the increase in J(sc) and V(oc), respectively. Moreover, we discussed the effect of Al-doping on optical band-gap of the samples and the transfer of electron.

  11. The role of Al, Ba, and Cd dopant elements in tailoring the properties of c-axis oriented ZnO thin films

    NASA Astrophysics Data System (ADS)

    Ali, Dilawar; Butt, M. Z.; Arif, Bilal; Al-Ghamdi, Ahmed A.; Yakuphanoglu, Fahrettin

    2017-02-01

    Highly c-axis oriented un-doped ZnO and Al-, Ba-, and Cd-doped ZnO thin films were successfully deposited on glass substrate employing sol-gel spin coating method. XRD analysis showed that all thin films possess hexagonal wurtzite structure with preferred orientation along c-axis. Field emission scanning electron microscope (FESEM) was used to study the morphology of thin films. The morphology consists of spherical and non-spherical shape grains. EDX analysis confirms the presence of O, Zn, Al, Ba, and Cd in the relevant thin films. The optical properties of thin films were studied using UV-Vis spectrometer. All thin films possess more than 85% optical transmittance in the visible region. Blue shift in optical band gap Eg has been observed on doping with Al, whereas doping with Ba and Cd resulted in red shift of Eg. Urbach energy Eu of all doped ZnO thin films was found to have excellent correlation with their band gap energy Eg. Moreover, Eg increases while Eu decreases on the increase in crystallite size D. Optical parameters Eg and Eu as well as structural parameters lattice strain and stacking fault probability also show excellent correlation with the B-factor or the mean-square amplitude of atomic vibrations of the dopant elements. Electrical conductivity measurement of the thin films was carried out using two-point probe method. The electrical conductivity was found to increase with the increase in crystallite orientation along c-axis.

  12. Electronic structure of Al-doped ZnO transparent conductive thin films studied by x-ray absorption and emission spectroscopies

    SciTech Connect

    Huang, W. H.; Sun, S. J.; Chiou, J. W.; Chou, H.; Chan, T. S.; Lin, H.-J.; Kumar, Krishna; Guo, J.-H.

    2011-11-15

    This study used O K-, Zn L{sub 3}-, Zn K-, and Al K-edges x-ray absorption near-edge structure (XANES) and O K-edge x-ray emission spectroscopy (XES) measurements to investigate the electronic structure of transparent Al-doped ZnO (AZO) thin film conductors. The samples were prepared on glass substrates at a low temperature near 77 K by using a standard RF sputtering method. High-purity Ne (5N) was used as the sputtering gas. The crystallography of AZO thin films gradually transformed from the ZnO wurtize structure to an amorphous structure during sample deposition, which suggests the suitability to grow on flexible substrates, eliminating the severe degradation due to fragmentation by repeated bending. The O K- and Zn L{sub 3}-edges XANES spectra of AZO thin films revealed a decrease in the number of both O 2p and Zn 3d unoccupied states when the pressure of Ne was increased from 5 to 100 mTorr. In contrast, Al K-edges XANES spectra showed that the number of unoccupied states of Al 3p increased in conjunction with the pressure of Ne, indicating an electron transfer from Al to O atoms, and suggesting that Al doping increases the negative effective charge of oxygen ions. XES and XANES spectra of O 2p states at the O K-edge also revealed that Al doping not only raised the conduction-band-minimum, but also increased the valence-band-maximum and the band-gap. The results indicate that the reduction in conductivity of AZO thin films is due to the generation of ionic characters, the increase in band-gap, and the decrease in density of unoccupied states of oxygen.

  13. Amplified spontaneous emission from ZnO in n-ZnO/ZnO nanodots-SiO(2) composite/p-AlGaN heterojunction light-emitting diodes.

    PubMed

    Shih, Ying Tsang; Wu, Mong Kai; Li, Wei Chih; Kuan, Hon; Yang, Jer Ren; Shiojiri, Makoto; Chen, Miin Jang

    2009-04-22

    This study demonstrates amplified spontaneous emission (ASE) of the ultraviolet (UV) electroluminescence (EL) from ZnO at lambda~380 nm in the n-ZnO/ZnO nanodots-SiO(2) composite/p- Al(0.12)Ga(0.88)N heterojunction light-emitting diode. A SiO(2) layer embedded with ZnO nanodots was prepared on the p-type Al(0.12)Ga(0.88)N using spin-on coating of SiO(2) nanoparticles followed by atomic layer deposition (ALD) of ZnO. An n-type Al-doped ZnO layer was deposited upon the ZnO nanodots-SiO(2) composite layer also by the ALD technique. High-resolution transmission electron microscopy (HRTEM) reveals that the ZnO nanodots embedded in the SiO(2) matrix have diameters of 3-8 nm and the wurtzite crystal structure, which allows the transport of carriers through the thick ZnO nanodots-SiO(2) composite layer. The high quality of the n-ZnO layer was manifested by the well crystallized lattice image in the HRTEM picture and the low-threshold optically pumped stimulated emission. The low refractive index of the ZnO nanodots-SiO(2) composite layer results in the increase in the light extraction efficiency from n-ZnO and the internal optical feedback of UV EL into n-ZnO layer. Consequently, significant enhancement of the UV EL intensity and super-linear increase in the EL intensity, as well as the spectral narrowing, with injection current were observed owing to ASE in the n-ZnO layer.

  14. Field-induced doping-mediated tunability in work function of Al-doped ZnO: Kelvin probe force microscopy and first-principle theory

    NASA Astrophysics Data System (ADS)

    Kumar, Mohit; Mookerjee, Sumit; Som, Tapobrata

    2016-09-01

    We demonstrate that the work function of Al-doped ZnO (AZO) can be tuned externally by applying an electric field. Our experimental investigations using Kelvin probe force microscopy show that by applying a positive or negative tip bias, the work function of AZO film can be enhanced or reduced, which corroborates well with the observed charge transport using conductive atomic force microscopy. These findings are further confirmed by calculations based on first-principles theory. Tuning the work function of AZO by applying an external electric field is not only important to control the charge transport across it, but also to design an Ohmic contact for advanced functional devices.

  15. Improved optical and electrical properties of rf sputtered Al doped ZnO films on polymer substrates by low-damage processes

    SciTech Connect

    Min, Hyung Seob; Yang, Min Kyu; Lee, Jeon-Kook

    2009-03-15

    Three types of low-damage radio-frequency (rf) magnetron sputtering processes--an interruptive process, a rotating cylindrical holder method, and an off-axis sputtering method--were designed and studied to reduce the film surface temperature during deposition. Low-damage sputtering processes were investigated to improve the resistivity and optical transmittance in the visible range of Al doped ZnO (AZO) thin films deposited on polymer substrates. In the case of the polyethersulfone substrate, AZO films with a resistivity of 1.0x10{sup -3} {omega} cm and an optical transmittance of 75% were obtained by the rotating repeat holder method during rf sputtering.

  16. Field-induced doping-mediated tunability in work function of Al-doped ZnO: Kelvin probe force microscopy and first-principle theory.

    PubMed

    Kumar, Mohit; Mookerjee, Sumit; Som, Tapobrata

    2016-09-16

    We demonstrate that the work function of Al-doped ZnO (AZO) can be tuned externally by applying an electric field. Our experimental investigations using Kelvin probe force microscopy show that by applying a positive or negative tip bias, the work function of AZO film can be enhanced or reduced, which corroborates well with the observed charge transport using conductive atomic force microscopy. These findings are further confirmed by calculations based on first-principles theory. Tuning the work function of AZO by applying an external electric field is not only important to control the charge transport across it, but also to design an Ohmic contact for advanced functional devices.

  17. Synthesis of flower-like Al doped ZnO microstructures by hydrothermal process and analysis of their gas sensing properties

    NASA Astrophysics Data System (ADS)

    Li, Zan; Qin, Wei; Zhao, Wenjie; Wu, Xiaohong

    2014-04-01

    Al-doped ZnO (AZO) powders with flower-like microstructures were successfully synthesized through a simple and efficient hydrothermal approach, and were characterized by X-ray diffraction (XRD), scanning electron microscopy (SEM), and energy diffraction spectrum (EDS). All the samples presented high crystallinity with a hexagonal wurtzite structure. The heater gas sensors based on AZO were fabricated and investigation of gas sensing properties was conducted. The sensors showed high response values and reproducible response-recovery for 50-1800 ppm ethanol at 332°C, comparing with NH3, SO2, CO, and HCHO. The underlying mechanism was discussed.

  18. Atomic layer deposition of Al-doped ZnO films using ozone as the oxygen source: A comparison of two methods to deliver aluminum

    SciTech Connect

    Yuan Hai; Luo Bing; Yu Dan; Cheng, An-jen; Campbell, Stephen A.; Gladfelter, Wayne L.

    2012-01-15

    Aluminum-doped ZnO films were prepared by atomic layer deposition at 250 deg. C using diethylzinc (DEZ), trimethylaluminum (TMA), and ozone as the precursors. Two deposition methods were compared to assess their impact on the composition, structural, electrical, and optical properties as a function of Al concentration. The first method controlled the Al concentration by changing the relative number of Al to Zn deposition cycles; a process reported in the literature where water was used as the oxygen source. The second method involved coinjection of the DEZ and TMA during each cycle where the partial pressures of the precursors control the aluminum concentration. Depth profiles of the film composition using Auger electron spectroscopy confirmed a layered microstructure for the films prepared by the first method, whereas the second method led to a homogeneous distribution of the aluminum throughout the ZnO film. Beneath the surface layer the carbon concentrations for all of the films were below the detection limit. Comparison of their electrical and optical properties established that films deposited by coinjection of the precursors were superior.

  19. Improving NaI:TI with non-luminescent cation co-doping (Conference Presentation)

    NASA Astrophysics Data System (ADS)

    Yang, Kan; Menge, Peter R.

    2016-09-01

    Thallium activated sodium iodide (NaI:Tl) is one of the most widely used gamma-ray scintillators. Commercially available NaI:Tl scintillators are typically characterized by a gamma-ray energy resolution of 6.5% at 662 keV and a scintillation decay time constant of 230 ns. Energy resolution, non-proportionality and scintillation decay time are improved when the crystal is co-doped with alkaline earth metals. The energy resolution of NaI:Tl+ is improved to 5.3% and the decay time is simultaneously reduced to 170 ns with Sr or Ca co-doping. The improvement in energy resolution, non-proportionality and decay time is likely due to the suppression of slow scintillation processes in NaI:Tl. We also demonstrated that Li+ can be substantially incorporated into the matrix of NaI under an optimized crystal growth process. The incorporation of Li+ introduces efficient neutron detection capability into an already successful gamma scintillator. Single crystals of Li co-doped NaI show similar gamma performance as standard NaI:Tl. Exceptional gamma-neutron pulse shape discrimination (PSD) has been demonstrated in all Li co-doped NaI crystals with up to 8% Li concentration. PSD Figure-of-Merits are up to 4.4 depending on Li content.

  20. Co-doped mesoporous titania photocatalysts prepared from a peroxo-titanium complex solution

    SciTech Connect

    El Saliby, Ibrahim; Erdei, Laszlo; McDonagh, Andrew; Kim, Jong-Beom; Kim, Jong-Ho; Shon, Ho Kyong

    2014-01-01

    Graphical abstract: - Highlights: • Peroxotitanium complex for the synthesis of doped photocatalysts. • Fabrication of N doped and N/Ag co-doped photocatalysts. • Characterization of photocatalysts by SEM, XRD, BET, DRS and XPS. • Bench scale photocatalysis under simulated solar light using crystal violet pollutant. - Abstract: In this study, nitrogen doped and nitrogen/silver co-doped TiO{sub 2} photocatalsysts were fabricated using a sol–gel method at room temperature. The obtained gels were neutralized, washed with pure water, and calcined at 400 °C for 4 h. The photocatalysts were characterized by scanning and transmission electron microscopy, X-ray diffraction, diffuse reflectance spectroscopy, X-ray photoelectron spectroscopy, and BET specific surface area. The results showed that spherical particles with anatase structure were produced after annealing at 400 °C. N 1s (400 eV) and Ag 3d (367.3 eV) states indicated that nitrogen doping and silver co-doping were in the form of NO bonds and AgO, respectively. The photocatalytic activity of photocatalysts was investigated using a batch reactor system exposed to artificial solar irradiation. Both nitrogen and silver/nitrogen co-doped materials were effective in the photocatalytic degradation of hexamethyl pararosaniline chloride.

  1. Interaction between Nitrogen and Sulfur in Co-Doped Graphene and Synergetic Effect in Supercapacitor

    PubMed Central

    Wang, Tao; Wang, Lu-Xiang; Wu, Dong-Ling; Xia, Wei; Jia, Dian-Zeng

    2015-01-01

    The co-doping of graphene with nitrogen and sulfur was investigated aiming at understanding their interactions with the presence of oxygen in graphene. The co-doped graphene (NS-G) was synthesized via a one-pot hydrothermal route using graphene oxide as starting material and L-cysteine, an amino acid containing both N and S, as the doping agent. The obtained NS-G with a three-dimensional hierarchical structure containing both macropores and mesopores exhibited excellent mechanical stabilities under both wet and dry conditions. As compared to N or S singly doped graphene, the co-doped sample contains significantly higher concentrations of N and S species especially pyrollic N groups. The co-doped sample considerably outperformed the singly doped samples when used as free-standing electrode in supercapacitors due to enhanced pseudocapacitance. The simultaneous incorporation of S and N species with the presence of oxygen significantly modified the surface chemistry of carbon leading to considerably higher doping levels, although directly bonding between N and S is neither likely nor detected. Hence, the synergetic effect between N and S occurred through carbon atoms in neighboring hexagonal rings in a graphene sheet. PMID:25880811

  2. C, N co-doped TiO2/TiC0.7N0.3 composite coatings prepared from TiC0.7N0.3 powder using ball milling followed by oxidation

    NASA Astrophysics Data System (ADS)

    Hao, Liang; Wang, Zhenwei; Zheng, Yaoqing; Li, Qianqian; Guan, Sujun; Zhao, Qian; Cheng, Lijun; Lu, Yun; Liu, Jizi

    2017-01-01

    Ball milling followed by heat oxidation was used to prepared C, N co-doped TiO2 coatings on the surfaces of Al2O3 balls from TiC0.7N0.3 powder. The as-prepared coatings were characterized by X-ray diffraction (XRD), scanning electron microscopy (SEM), X-ray photoelectron spectroscopy (XPS) and ultraviolet-visible spectrophotometer (UV-vis). The results show that continuous TiC0.7N0.3 coatings were formed after ball milling. C, N co-doped TiO2/TiC0.7N0.3 composite coatings were prepared after the direct oxidization of TiC0.7N0.3 coatings in the atmosphere. However, TiO2 was hardly formed in the surface layer of TiC0.7N0.3 coatings within a depth less than 10 nm during the heat oxidation of TiC0.7N0.3 coatings in carbon powder. Meanwhile, the photocatalytic activity evaluation of these coatings was conducted under the irradiation of UV and visible light. All the coatings showed photocatalytic activity in the degradation of MB no matter under the irradiation of UV or visible light. The C, N co-doped TiO2/TiC0.7N0.3 composite coatings showed the most excellent performance. The enhancement under visible light irradiation should attribute to the co-doping of carbon and nitrogen, which enhances the absorption of visible light. The improvement of photocatalytic activity under UV irradiation should attribute to the synergistic effect of C, N co-doping, the formation of rutile-anatase mixed phases and the TiO2/TiC0.7N0.3 composite microstructure.

  3. The microstructure of erbium-ytterbium co-doped oxyfluoride glass-ceramic optical fibers

    NASA Astrophysics Data System (ADS)

    Augustyn, Elżbieta; Żelechower, Michał; Stróż, Danuta; Chrapoński, Jacek

    2012-04-01

    Oxyfluoride transparent glass-ceramics combine some features of glasses (easier shaping or lower than single crystals cost of fabrication) and some advantages of rare-earth doped single crystals (narrow absorption/emission lines and longer lifetimes of luminescent levels). Since the material seems to be promising candidate for efficient fiber amplifiers, the manufacturing as well as structural and optical examination of the oxyfluoride glass-ceramic fibers doped with rare-earth ions seems to be a serious challenge. In the first stage oxyfluoride glasses of the following compositions 48SiO2-11Al2O3-7Na2CO3-10CaO-10PbO-11PbF2-3ErF3 and 48SiO2-11Al2O3-7Na2CO3-10CaO-10PbO-10PbF2-3YbF3-1ErF3 (in molar%) were fabricated from high purity commercial chemicals (Sigma-Aldrich). The fabricated glass preforms were drawn into glass fibers using the mini-tower. Finally, the transparent Er3+ doped and Er3+/Yb3+ co-doped oxyfluoride glass-ceramic fibers were obtained by controlled heat treatment of glass fibers. The preceding differential thermal analysis (DTA) studies allowed estimating both the fiber drawing temperature and the controlled crystallization temperature of glass fibers. X-ray diffraction examination (XRD) at each stage of the glass-ceramic fibers fabrication confirmed the undesirable crystallization of preforms and glass fibers has been avoided. The fibers shown their mixed amorphous-crystalline microstructure with nano-crystals of size even below 10 nm distributed in the glassy host. The crystal structure of the grown nano-crystals has been determined by XRD and confirmed by electron diffraction (SAED). Results obtained by both techniques seem to be compatible: Er3FO10Si3 (monoclinic; ICSD 92512), Pb5Al3F19 (triclinic; ICSD 91325) and Er4F2O11Si3 (triclinic; ICSD 51510) against to initially expected PbF2 crystals.

  4. Synergistic effects of F and Fe in co-doped TiO2 nanoparticles

    NASA Astrophysics Data System (ADS)

    Zhang, Yufei; Shen, Huiyuan; Liu, Yanhua

    2016-03-01

    TiO2 photocatalysts co-doped with F and Fe were synthesized by a sol-gel method. Synergistic effects of F and Fe in the co-doped TiO2 were verified by NH3 decomposition, X-ray diffraction (XRD), scanning electron microscopy (SEM), high-resolution transmission electron microscopy (HRTEM), X-ray photoelectron spectroscopy (XPS) and ultraviolet-visible (UV-Vis) absorption spectroscopy, and was analyzed by the simulation based on the density functional theory (DFT). The results from NH3 decomposition confirmed that the cooperation of F and Fe broadened the optical response of TiO2 to visible light region and also enhanced the photocatalytic activity of TiO2 under ultraviolet light. XRD patterns, SEM and HRTEM images showed that the co-doped samples were nanometric anatase with an average particle size of 25 nm. Co-doping with F and Fe inhibited the grain growth of TiO2 from anatase to rutile and resulted in a larger lattice defect. XPS analysis exhibited that the doped F and Fe atoms were into the TiO2 lattice. UV-Vis absorption spectra showed that its optical absorption edge was moved up to approximately 617 nm and its ultraviolet absorption was also enhanced. The DFT results indicated that the cooperation of Fe 3d and O 2p orbits narrowed the band gap of TiO2 and F 2p orbit widened the upper valence bands. The synergistic electron density around F and Fe in co-doped TiO2 was capable to enhance the photo-chemical stability of TiO2.

  5. White-light emitting Eu3+ co-doped ZnO/Zn2SiO4:Mn2+ composite microphosphor

    NASA Astrophysics Data System (ADS)

    Ramakrishna, P. V.; Murthy, D. B. R. K.; Sastry, D. L.

    Eu3+ co-doped ZnO/Zn2SiO4:Mn2+ composites were synthesized via conventional solid state reaction route and were characterized by X-ray diffraction (XRD) scanning electron microscopy (SEM) and Fourier transform infra-red (FTIR) techniques. XRD studies reveal the presence of both ZnO and Zn2SiO4 phases. Photoluminescence properties of the samples were studied using 266 Nd-YAG laser excitations. Emission bands observed at ˜400 nm are ascribed to ZnO phosphor. The green emission bands at 530 nm is associated with the presence of Mn2+ ion, while orange (˜583) and red (615 nm) bands are supposed to be due to the presence of Eu3+ doped Zn2SiO4 phosphor. Energy transfer from power dependence of the sample for electric dipole transition (615 nm) was studied under 532 nm excitation by varying the power from 0.1 to 4.5 W. The estimated colour correlated temperature (CCT) values are found to be ˜4875 and 4458 K under 266 nm and 532 nm laser (0.5 W) excitations. These values are close to those of tubular fluorescent or cool white/daylight compact fluorescent (CFL) (˜5000 K) lamps. The present composite phosphor may have potential application in display devices.

  6. Comparison of heterojunction device parameters for pure and doped ZnO thin films with IIIA (Al or In) elements grown on silicon at room ambient

    NASA Astrophysics Data System (ADS)

    Kaya, Ahmet; Cansizoglu, Hilal; Mamtaz, Hasina H.; Mayet, Ahmed S.; Islam, M. Saif

    2016-09-01

    In this work, pure and IIIA element doped ZnO thin films were grown on p type silicon (Si) with (100) orientated surface by sol-gel method, and were characterized for comparing their electrical characteristics. The heterojunction parameters were obtained from the current-voltage (I-V) and capacitance-voltage (C-V) characteristics at room temperature. The ideality factor (n), saturation current (Io) and junction resistance of ZnO/p-Si heterojunction for both pure and doped (with Al or In) cases were determined by using different methods at room ambient. Other electrical parameters such as Fermi energy level (EF), barrier height (ΦB), acceptor concentration (Na), built-in potential (Φi) and voltage dependence of surface states (Nss) profile were obtained from the C-V measurements. The results reveal that doping ZnO with IIIA (Al or In) elements to fabricate n-ZnO/p-Si heterojunction can result in high performance diode characteristics.

  7. Thickness effect on the optical and morphological properties in Al2O3/ZnO nanolaminate thin films prepared by atomic layer deposition

    NASA Astrophysics Data System (ADS)

    López, J.; Martínez, J.; Abundiz, N.; Domínguez, D.; Murillo, E.; Castillón, F. F.; Machorro, R.; Farías, M. H.; Tiznado, H.

    2016-02-01

    In this work, we studied the optical and morphological properties of ultrathin nanolaminate films based on Al2O3/ZnO (AZ) bilayers stack. The films were deposited on Si (100) by means of thermal atomic layer deposition (ALD) technique. The bilayer thicknesses (ratio = 1:1) were 0.2, 1, 2, 4, 10 and 20 nm. Refractive index (n) and band gap (Eg) of each nanolaminate were studied via spectroscopic ellipsometry (SE), and spectral reflectance ultraviolet-visible spectroscopy (UV-vis). Surface morphology and roughness parameters of the nanolaminates were measured by Atomic Force Microscopy (AFM). The optical and morphological properties were shown highly dependent on the bilayer thickness. Ellipsometric data treated through the Cody-Lorentz optical model revealed that the refractive index decreases for thinner bilayers. A sharp intensity decay of refractive index and peaks at the UV region (200-400 nm) indicated increased transparency for thinner bilayers. It is also shown that the band gap is tunable. The maximum band gap value was 4.8 eV. These results reveal that ZnO combined with Al2O3 as bilayers stack can be converted into a dielectric material with enhanced band gap, opening the possibility for new optical and dielectric applications.

  8. Investigations on the roles of position controlled Al layers incorporated into an Al-doped ZnO active channel during atomic layer deposition for thin film transistor applications

    NASA Astrophysics Data System (ADS)

    Kim, Eom-Ji; Lee, Won-Ho; Yoon, Sung-Min

    2016-03-01

    We investigated the effects of the distance between incorporated Al layers on the characteristics of thin-film transistors (TFTs) using Al-doped ZnO (AZO) as the active channels. The intervals between the Al layers were controlled by designing the sequences of Al cycles during the atomic-layer deposition. Two configurations were designed as “scatter” or “focus”, in which the incorporated Al layers were dispersed to bottom and top sides or concentrated on the center region. Electrical conductivities of “scatter” and “focus” films were observed to be different. While the dispersed Al layers could work as dopants, a too-close interval between the Al layers suppressed carrier transport, even with the same incorporated Al amounts. These differences were reflected on the device characteristics. The TFT performance of the “scatter” device was better than that of the “focus” device. Consequently, adequately dispersed Al layers in the AZO channel are very important for improving device performance.

  9. Boron, bismuth co-doping of gallium arsenide and other compounds for photonic and heterojunction bipolar transistor devices

    DOEpatents

    Mascarenhas, Angelo

    2015-07-07

    Isoelectronic co-doping of semiconductor compounds and alloys with acceptors and deep donors is sued to decrease bandgap, to increase concentration of the dopant constituents in the resulting alloys, and to increase carrier mobilities lifetimes. For example, Group III-V compounds and alloys, such as GaAs and GaP, are isoelectronically co-doped with, for example, B and Bi, to customize solar cells, and other semiconductor devices. Isoelectronically co-doped Group II-VI compounds and alloys are also included.

  10. The effects of doping and shell thickness on the optical and magnetic properties of Mn/Cu/Fe-doped and Co-doped ZnS nanowires/ZnO quantum dots/SiO2 heterostructures

    NASA Astrophysics Data System (ADS)

    Cao, Jian; Yang, Jinghai; Yang, Lili; Wei, Maobin; Feng, Bo; Han, Donglai; Fan, Lin; Wang, Bingji; Fu, Hao

    2012-07-01

    In this paper, we demonstrated the encapsulation of Mn/Cu/Fe-doped and co-doped ZnS nanowires (NWs) and ZnO quantum dots (QDs) with a layer of mesoporous SiO2 shell for the purpose of integrating dual emission and ferromagnetism property into one common nanostructure at room temperature. Within the ZnS:Mn2+Cu2+Fe2+/ZnO@SiO2 nanocomposites, ZnS:Mn2+Cu2+Fe2+ NWs and ZnO QDs provided color-tunable visible emission and UV emission, respectively. The color-tunable visible emission in the ZnS:Mn2+Cu2+Fe2+ NWs can be obtained by adjusting the concentrations of Mn2+, Cu2+, and Fe2+ ions. The ferromagnetism of the ZnS:Mn2+Cu2+Fe2+ NWs was observed around room temperature, the mechanism of which was explained by the super-exchange mechanism. The results of the effect of the ZnO QDs shell thickness on the optical properties of the ZnS:Mn2+/ZnO@SiO2 nanocomposites showed that the luminescence intensity of the yellow-orange emission and UV emission reached the highest value when the ratio of ZnS:Mn2+/ZnO equaled 1:5.

  11. Single and couple doping ZnO nanocrystals characterized by positron techniques

    NASA Astrophysics Data System (ADS)

    Pasang, Tenzin; Namratha, Keerthiraj; Guagliardo, Paul; Byrappa, Kullaiah; Ranganathaiah, Chikkakuntappa; Samarin, S.; Williams, J. F.

    2015-04-01

    Zinc oxide (ZnO) nanocrystals have been synthesized using a mild hydrothermal process using low temperatures and pressures with the advantages of free growth catalyst, low cost and alternative technology. Positron annihilation lifetime spectroscopy and coincidence Doppler broadening (CDB) spectroscopic methods have been used to investigate the roles of single- and co-dopants and native defects of the ZnO nanocrystals controlled by the synthesis process. It is shown that single Ag1+ and Pd2+ dopants occupy interstitial sites of the ZnO lattice and single Ru3+ doping replaces Zn vacancies substitutionally with a significant effect on the CDB momentum ratio curves when compared using ZnO as the reference spectrum. The co-doping of the ZnO lattice with (Sn4+ + Co2+) shows similar CDB ratios as Ru3+ single-doping. Also co-doping with (Ag1+ + Pd2+) or (Ag1+ + W6+) shows significant decreases in the band gap energy up to about 12.6% compared to single doping. The momentum ratio curves, referenced to undoped ZnO, indicate dopants in interstitial and substitutional sites. The presence of transition metal ions interstitially will trap electrons which resist the recombination of electrons and in turn affect the conductivity of the material.

  12. Transition-metal-doped ZnO nanoparticles: synthesis, characterization and photocatalytic activity under UV light.

    PubMed

    Saleh, Rosari; Djaja, Nadia Febiana

    2014-09-15

    ZnO nanoparticles doped with transition metals (Mn and Co) were prepared by a co-precipitation method. The synthesized nanoparticles were characterized using X-ray diffraction, scanning electron microscopy, energy dispersive X-rays, Fourier transform infrared spectroscopy, electron spin resonance spectroscopy and diffuse reflectance spectroscopy. The photocatalytic activities of the transition-metal-doped ZnO nanoparticles were evaluated in the degradation of methyl orange under UV irradiation. ZnO nanoparticles doped with 12 at.% of Mn and Co ions exhibited the maximum photodegradation efficiency. The experiment also demonstrated that the photodegradation efficiency of Mn-doped ZnO nanoparticles was higher than that of Co-doped ZnO nanoparticles. These results indicate that charge trapping states due to the doping were the decisive factor rather than the average particle size and energy gap. Moreover the effect of pH values on the degradation efficiency was discussed in the photocatalytic experiments using 12 at.% Mn- and Co-doped ZnO nanoparticles.

  13. Transition-metal-doped ZnO nanoparticles: Synthesis, characterization and photocatalytic activity under UV light

    NASA Astrophysics Data System (ADS)

    Saleh, Rosari; Djaja, Nadia Febiana

    2014-09-01

    ZnO nanoparticles doped with transition metals (Mn and Co) were prepared by a co-precipitation method. The synthesized nanoparticles were characterized using X-ray diffraction, scanning electron microscopy, energy dispersive X-rays, Fourier transform infrared spectroscopy, electron spin resonance spectroscopy and diffuse reflectance spectroscopy. The photocatalytic activities of the transition-metal-doped ZnO nanoparticles were evaluated in the degradation of methyl orange under UV irradiation. ZnO nanoparticles doped with 12 at.% of Mn and Co ions exhibited the maximum photodegradation efficiency. The experiment also demonstrated that the photodegradation efficiency of Mn-doped ZnO nanoparticles was higher than that of Co-doped ZnO nanoparticles. These results indicate that charge trapping states due to the doping were the decisive factor rather than the average particle size and energy gap. Moreover the effect of pH values on the degradation efficiency was discussed in the photocatalytic experiments using 12 at.% Mn- and Co-doped ZnO nanoparticles.

  14. First-principles study of magnetic properties in Co-doped BiFeO3

    NASA Astrophysics Data System (ADS)

    Rong, Qing-Yan; Wang, Ling-Ling; Xiao, Wen-Zhi; Xu, Liang

    2015-01-01

    The electronic, structural, and magnetic properties of the perovskite Co-doped BiFeO3 have been investigated using density functional theory within the generalized gradient approximation plus Hubbard U correction (GGA+U). We discuss the changes that occur in the structural parameters, electronic structure, and magnetic properties of the Co-doped BiFeO3 under the consideration of the impact of the 3d electrons. The results show that a substitutional Co for Fe in BiFeO3 produces a magnetic moment of -1.0 μB and a half-metallic property emerges. The ferromagnetic (FM) coupling is more stable and still presents a half-metallic property when two Co atoms substitute for Fe atoms in BiFeO3.

  15. Enhancement of thermospin effect in ZGNRs via p-n co-doping on edge

    NASA Astrophysics Data System (ADS)

    Pan, Ting-Ting; Wang, Xue-Feng; Zhai, Ming-Xing; Liu, Yu-Shen; Wu, Jian-Chun; Xu, Chen

    2016-10-01

    Electronic and thermoelectric properties are studied for ferromagnetic zigzag graphene nanoribbons (ZGNRs) co-doped by a pair of boron and nitrogen atoms on one edge. In case of the 1st nearest neighbor co-doping, the two dopants are partly neutralized by each other and the corresponding impurity states approach to the Fermi energy symmetrically from high and low energies. As a result, the electronic properties are effectively manipulated and the conductances of different spin show opposite behaviours. Over a large range from zero temperature to higher-than-room temperature, the system shows a strong spin thermopower with a spin Seebeck coefficient much bigger than the charge one. These findings suggest that doped ZGNRs can be promising materials for spintronic and thermospintronic devices.

  16. Electrode effects in dielectric spectroscopy measurements on (Nb +In) co-doped TiO2

    NASA Astrophysics Data System (ADS)

    Crandles, David; Yee, Susan; Savinov, Maxim; Nuzhnyy, Dimitri; Petzelt, Jan; Kamba, Stanislav; Prokes, Jan

    Recently, several papers reported the discovery of giant permittivity and low dielectric loss in (Nb+In) co-doped TiO2. A series of tests was performed which included the measurement of the frequency dependence of the dielectric permittivity and ac conductivity of co-doped (Nb+In)TiO2 as a function of electrode type, sample thickness and temperature. The data suggest that the measurements are strongly affected by the electrodes. The consistency between four contact van der Pauw dc conductivity measurements and bulk conductivity values extracted from two contact ac conductivity measurements suggest that the values of colossal permittivity are, at least in part, a result of Schottky barrier depletion widths that depend on electrode type and temperature. Nserc, Czech Science Foundation (Project 15-08389S).

  17. Low-temperature ferromagnetic properties in Co-doped Ag{sub 2}Se nanoparticles

    SciTech Connect

    Yang, Fengxia E-mail: xia9020@hust.edu.cn; Yu, Gen; Han, Chong; Liu, Tingting; Zhang, Duanming; Xia, Zhengcai E-mail: xia9020@hust.edu.cn

    2014-01-06

    β-Ag{sub 2}Se is a topologically nontrivial insulator. The magnetic properties of Co-doped Ag{sub 2}Se nanoparticles with Co concentrations up to 40% were investigated. The cusp of zero-field-cooling magnetization curves and the low-temperature hysteresis loops were observed. With increasing concentration of Co{sup 2+} ions mainly substituting Ag{sub I} sites in the Ag{sub 2}Se structure, the resistivity, Curie temperature T{sub c}, and magnetization increased. At 10 T, a sharp drop of resistance near T{sub c} was detected due to Co dopants. The ferromagnetic behavior in Co-doped Ag{sub 2}Se might result from the intra-layer ferromagnetic coupling and surface spin. This magnetic semiconductor is a promising candidate in electronics and spintronics.

  18. Phosphorus and Halogen Co-Doped Graphene Materials and their Electrochemistry.

    PubMed

    Wang, Lu; Sofer, Zdenek; Zboril, Radek; Cepe, Klara; Pumera, Martin

    2016-10-17

    Doping of graphene materials with heteroatoms is important as it can change their electronic and electrochemical properties. Here, graphene is co-doped with n-type dopants such as phosphorus and halogen (Cl, Br, I). Phosphorus and halogen are introduced through the treatment of graphene oxide with PX3 gas (PCl3 , PBr3 , and PI3 ). Graphene oxides are prepared through chlorate and permanganate routes. Detailed chemical and structural characterization demonstrates that the graphene sheets are covered homogeneously by phosphorus and halogen atoms. It is found that the amount of phosphorus and halogen introduced depends on the graphene oxide preparation method. The electrocatalytic effect of the resulting co-doped materials is demonstrated for industrially relevant electrochemical reactions such as the hydrogen evolution and oxygen reduction reactions.

  19. Enhanced electrical activation in In-implanted Ge by C co-doping

    DOE PAGES

    Feng, R.; Kremer, F.; Sprouster, D.; ...

    2015-11-22

    At high dopant concentrations in Ge, electrically activating all implanted dopants is a major obstacle in the fulfillment of high-performance Ge-channel complementary metal oxide semiconductor devices. In this letter, we demonstrate a significant increase in the electrically-active dopant fraction in In-implanted Ge by co-doping with the isovalent element C. Electrical measurements have been correlated with x-ray absorption spectroscopy and transmission electron microscopy results in addition to density functional theory simulations. With C þ In co-doping, the electrically active fraction was doubled and tripled at In concentrations of 0.2 and 0.7 at. %, respectively. This marked improvement was the result ofmore » C-In pair formation such that In-induced strain in the Ge lattice was reduced while the precipitation of In and the formation of In-V clusters were both suppressed.« less

  20. Enhanced electrical activation in In-implanted Ge by C co-doping

    SciTech Connect

    Feng, R.; Kremer, F.; Sprouster, D.; Mirzaei, S.; Decoster, S.; Glover, C.; Medling, S.; Pereira, C.; Russo, S.; Ridgway, M.

    2015-11-22

    At high dopant concentrations in Ge, electrically activating all implanted dopants is a major obstacle in the fulfillment of high-performance Ge-channel complementary metal oxide semiconductor devices. In this letter, we demonstrate a significant increase in the electrically-active dopant fraction in In-implanted Ge by co-doping with the isovalent element C. Electrical measurements have been correlated with x-ray absorption spectroscopy and transmission electron microscopy results in addition to density functional theory simulations. With C þ In co-doping, the electrically active fraction was doubled and tripled at In concentrations of 0.2 and 0.7 at. %, respectively. This marked improvement was the result of C-In pair formation such that In-induced strain in the Ge lattice was reduced while the precipitation of In and the formation of In-V clusters were both suppressed.

  1. Fe/Co doped molybdenum diselenide: a promising two-dimensional intermediate-band photovoltaic material.

    PubMed

    Zhang, Jiajia; He, Haiyan; Pan, Bicai

    2015-05-15

    An intermediate-band (IB) photovoltaic material is an important candidate in developing the new-generation solar cell. In this paper, we propose that the Fe-doped or the Co-doped MoSe2 just meets the required features in IB photovoltaic materials. Our calculations demonstrate that when the concentration of the doped element reaches 11.11%, the doped MoSe2 shows a high absorptivity for both infrared and visible light, where the photovoltaic efficiency of the doped MoSe2 is as high as 56%, approaching the upper limit of photovoltaic efficiency of IB materials. So, the Fe- or Co-doped MoSe2 is a promising two-dimensional photovoltaic material.

  2. Tunable high-performance microwave absorption for manganese dioxides by one-step Co doping modification

    NASA Astrophysics Data System (ADS)

    Lv, Guocheng; Xing, Xuebing; Wu, Limei; Jiang, Wei-Teh; Li, Zhaohui; Liao, Libing

    2016-11-01

    The frequencies of microwave absorption can be affected by the permanent electric dipole moment which could be adjusted by modifying the crystal symmetry of the microwave absorbing materials. Herein, we corroborate this strategy experimentally and computationally to the microwave absorption of manganese dioxides. Nanosized Co-doped cryptomelane (Co-Cryp) was successfully synthesized by a one-step reaction. The introduction of Co(III) induced a change of crystal symmetry from tetragonal to monlclinic, which could lead to an increase of its permanent electric dipole moment. As a result, the frequencies of maximum microwave absorption were regulated in the range of 7.4 to 13.9 GHz with a broadened bandwidths. The results suggested that microwave absorption of manganese dioxides can be tailored with Co doping to expand their potential uses for abatement of various microwave pollutions.

  3. Enhancement of carrier mobility in thin Ge layer by Sn co-doping

    NASA Astrophysics Data System (ADS)

    Prucnal, S.; Liu, F.; Berencén, Y.; Vines, L.; Bischoff, L.; Grenzer, J.; Andric, S.; Tiagulskyi, S.; Pyszniak, K.; Turek, M.; Drozdziel, A.; Helm, M.; Zhou, S.; Skorupa, W.

    2016-10-01

    We present the development, optimization and fabrication of high carrier mobility materials based on GeOI wafers co-doped with Sn and P. The Ge thin films were fabricated using plasma-enhanced chemical vapour deposition followed by ion implantation and explosive solid phase epitaxy, which is induced by millisecond flash lamp annealing. The influence of the recrystallization mechanism and co-doping of Sn on the carrier distribution and carrier mobility both in n-type and p-type GeOI wafers is discussed in detail. This finding significantly contributes to the state-of-the-art of high carrier mobility-GeOI wafers since the results are comparable with GeOI commercial wafers fabricated by epitaxial layer transfer or SmartCut technology.

  4. Tunable high-performance microwave absorption for manganese dioxides by one-step Co doping modification

    PubMed Central

    Lv, Guocheng; Xing, Xuebing; Wu, Limei; Jiang, Wei-Teh; Li, Zhaohui; Liao, Libing

    2016-01-01

    The frequencies of microwave absorption can be affected by the permanent electric dipole moment which could be adjusted by modifying the crystal symmetry of the microwave absorbing materials. Herein, we corroborate this strategy experimentally and computationally to the microwave absorption of manganese dioxides. Nanosized Co-doped cryptomelane (Co-Cryp) was successfully synthesized by a one-step reaction. The introduction of Co(III) induced a change of crystal symmetry from tetragonal to monlclinic, which could lead to an increase of its permanent electric dipole moment. As a result, the frequencies of maximum microwave absorption were regulated in the range of 7.4 to 13.9 GHz with a broadened bandwidths. The results suggested that microwave absorption of manganese dioxides can be tailored with Co doping to expand their potential uses for abatement of various microwave pollutions. PMID:27853275

  5. Structural, compositional and Raman studies of ZnS: Ce, Cu co-doped nanoparticles

    NASA Astrophysics Data System (ADS)

    Harish, G. S.; Reddy, P. Sreedhara

    2013-06-01

    In this present work, Ce, Cu co-doped ZnS nanoparticles were prepared at room temperature using chemical precipitation method. The prepared nanoparticles were characterized by X-ray diffraction (XRD), Scanning Electron Microscope (SEM), Energy dispersive analysis of X-rays (EDAX) and High Resolution Raman spectroscopic techniques. X-ray diffraction studies show that the diameter of the particles is 2-4 nm. Broadened XRD peaks confirmed the formation of nanoparticles with face centered cubic (FCC) structure. SEM attached with EDS gave the size, morphology and compositional analysis of as-prepared material. The Raman spectra of unplanted and Cu, Ce ions implanted samples of nano structured ZnS showed LO mode and TO mode. Compared with the Raman modes (276 and 351 cm-1) of undoped ZnS nanoparticles, the Raman modes of Ce, Cu co-doped ZnS nanoparticles are slightly shifted towards lower frequency side.

  6. Enhanced electrical activation in In-implanted Ge by C co-doping

    SciTech Connect

    Feng, R. Kremer, F.; Mirzaei, S.; Medling, S. A.; Ridgway, M. C.; Sprouster, D. J.; Decoster, S.; Pereira, L. M. C.; Glover, C. J.; Russo, S. P.

    2015-11-23

    At high dopant concentrations in Ge, electrically activating all implanted dopants is a major obstacle in the fulfillment of high-performance Ge-channel complementary metal oxide semiconductor devices. In this letter, we demonstrate a significant increase in the electrically-active dopant fraction in In-implanted Ge by co-doping with the isovalent element C. Electrical measurements have been correlated with x-ray absorption spectroscopy and transmission electron microscopy results in addition to density functional theory simulations. With C + In co-doping, the electrically active fraction was doubled and tripled at In concentrations of 0.2 and 0.7 at. %, respectively. This marked improvement was the result of C-In pair formation such that In-induced strain in the Ge lattice was reduced while the precipitation of In and the formation of In-V clusters were both suppressed.

  7. Tunable high-performance microwave absorption for manganese dioxides by one-step Co doping modification.

    PubMed

    Lv, Guocheng; Xing, Xuebing; Wu, Limei; Jiang, Wei-Teh; Li, Zhaohui; Liao, Libing

    2016-11-17

    The frequencies of microwave absorption can be affected by the permanent electric dipole moment which could be adjusted by modifying the crystal symmetry of the microwave absorbing materials. Herein, we corroborate this strategy experimentally and computationally to the microwave absorption of manganese dioxides. Nanosized Co-doped cryptomelane (Co-Cryp) was successfully synthesized by a one-step reaction. The introduction of Co(III) induced a change of crystal symmetry from tetragonal to monlclinic, which could lead to an increase of its permanent electric dipole moment. As a result, the frequencies of maximum microwave absorption were regulated in the range of 7.4 to 13.9 GHz with a broadened bandwidths. The results suggested that microwave absorption of manganese dioxides can be tailored with Co doping to expand their potential uses for abatement of various microwave pollutions.

  8. Polymer solar cells with efficiency >10% enabled via a facile solution-processed Al-doped ZnO electron transporting layer (Presentation Recording)

    NASA Astrophysics Data System (ADS)

    Jagadamma, Lethy K.; Al-Senani, Mohammed; Amassian, Aram

    2015-10-01

    The present work details a facile and low-temperature (125C) solution-processed Al-doped ZnO (AZO) buffer layer functioning very effectively as electron accepting/hole blocking layer for a wide range of polymer:fullerene bulk heterojunction systems, and yielding power conversion efficiency in excess of 10% (8%) on glass (plastic) substrates. We show that ammonia addition to the aqueous AZO nanoparticle solution is a critically important step toward producing compact and smooth thin films which partially retain the aluminum doping and crystalline order of the starting AZO nanocrystals. The ammonia treatment appears to reduce the native defects via nitrogen incorporation, making the AZO film a very good electron transporter and energetically matched with the fullerene acceptor. Importantly, highly efficient solar cells are achieved without the need for additional surface chemical passivation or modification, which has become an increasingly common route to improving the performance of evaporated or solution-processed ZnO ETLs in solar cells.

  9. High-Hall-Mobility Al-Doped ZnO Films Having Textured Polycrystalline Structure with a Well-Defined (0001) Orientation.

    PubMed

    Nomoto, Junichi; Makino, Hisao; Yamamoto, Tetsuya

    2016-12-01

    Five hundred-nanometer-thick ZnO-based textured polycrystalline films consisting of 490-nm-thick Al-doped ZnO (AZO) films deposited on 10-nm-thick Ga-doped ZnO (GZO) films exhibited a high Hall mobility (μ H) of 50.1 cm(2)/Vs with a carrier concentration (N) of 2.55 × 10(20) cm(-3). Firstly, the GZO films were prepared on glass substrates by ion plating with dc arc discharge, and the AZO films were then deposited on the GZO films by direct current magnetron sputtering (DC-MS). The GZO interface layers with a preferential c-axis orientation play a critical role in producing AZO films with texture development of a well-defined (0001) orientation, whereas 500-nm-thick AZO films deposited by only DC-MS showed a mixture of the c-plane and the other plane orientation, to exhibit a μ H of 38.7 cm(2)/Vs with an N of 2.22 × 10(20) cm(-3).

  10. Biaxial stress and optoelectronic properties of Al-doped ZnO thin films deposited on flexible substrates by radio frequency magnetron sputtering.

    PubMed

    Chen, Hsi-Chao; Cheng, Po-Wei; Huang, Kuo-Ting

    2017-02-01

    Transparent conductive Al-doped ZnO (AZO) thin films were deposited on polyethylene terephthalate (PET) and polycarbonate (PC) substrates using radio frequency (RF) magnetron sputtering. The biaxial stress was measured with a double beam shadow moiré interferometer, and x-ray diffraction (XRD) was used to investigate the crystal orientation of ZnO. The substrate temperature was varied from room temperature to 150°C in steps of 25°C. The experimental results showed that the residual and shearing stresses increased with the increase in substrate temperature. The residual stress can be separated into principle and shearing stresses by Mohr's circle rule, and the shearing stress (tensile stress) was different from the compressive stress of the residual stress. However, the optimal substrate temperatures for PET and PC were 75°C and 100°C, and the shearing stresses were 424.82 and 543.68 MPa, respectively. AZO/PET and AZO/PC thin films cracked at substrate temperatures of 75°C and 100°C, respectively. AZO/PET thin film at a substrate temperature of 100°C had a resistivity low to the order of 10-3  Ω-cm.

  11. High-Hall-Mobility Al-Doped ZnO Films Having Textured Polycrystalline Structure with a Well-Defined (0001) Orientation

    NASA Astrophysics Data System (ADS)

    Nomoto, Junichi; Makino, Hisao; Yamamoto, Tetsuya

    2016-06-01

    Five hundred-nanometer-thick ZnO-based textured polycrystalline films consisting of 490-nm-thick Al-doped ZnO (AZO) films deposited on 10-nm-thick Ga-doped ZnO (GZO) films exhibited a high Hall mobility ( μ H) of 50.1 cm2/Vs with a carrier concentration ( N) of 2.55 × 1020 cm-3. Firstly, the GZO films were prepared on glass substrates by ion plating with dc arc discharge, and the AZO films were then deposited on the GZO films by direct current magnetron sputtering (DC-MS). The GZO interface layers with a preferential c-axis orientation play a critical role in producing AZO films with texture development of a well-defined (0001) orientation, whereas 500-nm-thick AZO films deposited by only DC-MS showed a mixture of the c-plane and the other plane orientation, to exhibit a μ H of 38.7 cm2/Vs with an N of 2.22 × 1020 cm-3.

  12. Synthesis of N, F and S co-doped graphene quantum dots

    NASA Astrophysics Data System (ADS)

    Kundu, Sumana; Yadav, Ram Manohar; Narayanan, T. N.; Shelke, Manjusha V.; Vajtai, Robert; Ajayan, P. M.; Pillai, Vijayamohanan K.

    2015-07-01

    Graphene quantum dots (GQDs) are a promising category of materials with remarkable size dependent properties like tunable bandgap and photoluminescence along with the possibility of effective chemical functionalization. Doping of GQDs with heteroatoms is an interesting way of regulating their properties. Herein, we report a facile and scalable one-step synthesis of luminescent GQDs, substitutionally co-doped with N, F and S, of ~2 nm average size by a microwave treatment of multi-walled carbon nanotubes in a customized ionic liquid medium. The use of an ionic liquid coupled with the use of a microwave technique enables not only an ultrafast process for the synthesis of co-doped GQDs, but also provides excellent photoluminescence quantum yield (70%), perhaps due to the interaction of defect clusters and dopants.Graphene quantum dots (GQDs) are a promising category of materials with remarkable size dependent properties like tunable bandgap and photoluminescence along with the possibility of effective chemical functionalization. Doping of GQDs with heteroatoms is an interesting way of regulating their properties. Herein, we report a facile and scalable one-step synthesis of luminescent GQDs, substitutionally co-doped with N, F and S, of ~2 nm average size by a microwave treatment of multi-walled carbon nanotubes in a customized ionic liquid medium. The use of an ionic liquid coupled with the use of a microwave technique enables not only an ultrafast process for the synthesis of co-doped GQDs, but also provides excellent photoluminescence quantum yield (70%), perhaps due to the interaction of defect clusters and dopants. Electronic supplementary information (ESI) available: PLQY calculation, MWCNT synthetic details, TGA analysis and tabular format of GQD synthesis processes. See DOI: 10.1039/c5nr02427g

  13. Structural, optical and dielectric property of Co doped Bi{sub 2}Fe{sub 4}O{sub 9}

    SciTech Connect

    Swain, Smita Mohapatra, S. R. Sahoo, B. Singh, A. K.

    2014-04-24

    Multiferroic Bi{sub 2}Fe{sub 4}O{sub 9} and Co doped Bi{sub 2}Fe{sub 4}O{sub 9} are prepared by solid state route reaction method using bismuth oxide(Bi{sub 2}O{sub 3}), iron oxide(Fe{sub 2}O{sub 3}) and cobalt oxide (Co{sub 3}O{sub 4}). Their structural optical and dielectric properties are studied and compared. X-ray diffraction (XRD) results confirm that there is no change in crystal structure due to Co doping. From dielectric constant measurement we conclude that dielectric constant increases due to Co doping. UV-Visible plot shows due to Co doping bang gap energy increases.

  14. Catalytic wet air oxidation of phenol over Co-doped Fe3O4 nanoparticles

    NASA Astrophysics Data System (ADS)

    Song, Xu Chun; Zheng, Yi Fan; Yin, Hao Yong

    2013-08-01

    The Fe3O4 nanoparticles doped with cobalt ions have been successfully synthesized by the co-precipitation process. The X-ray diffraction, inductively coupled plasma, scanning electron microscopy, and transmission electron microscopy were used to characterize the as-prepared nanoparticles. The results show that the phase structure of the nanoparticles is spinel structure of pure Fe3O4 with the particle size ranging from 40 to 50 nm. The Co-doping concentration can be controlled by changing the atomic ratio of the stock materials. The catalytic activity of the Co-doped Fe3O4 was further investigated by decomposing the phenol in liquid phase. The results show that cobalt ions doping can improve the catalytic efficiency of Fe3O4 nanoparticles in phenol degradation with catalytic reaction fitting the first-order kinetics. According to the estimated reaction rate of Co-doped Fe3O4 nanoparticles at different temperatures, the activation energy was calculated to be 45.63 kJ/mol.

  15. Growth study and photocatalytic properties of Co-doped tungsten oxide mesocrystals

    SciTech Connect

    Sun, Shibin; Chang, Xueting; Li, Zhenjiang

    2012-11-15

    Cobalt-doped tungsten oxide mesocrystals with different morphologies have been successfully generated using a solvothermal method with tungsten hexachloride and cobalt chloride salts as precursors. The resulting mesocrystals were characterized by X-ray diffraction, field emission scanning electron microscopy, transmission electron microscopy, Brunauer-Emmet-Teller analysis of nitrogen sorptometer, and UV-vis diffuse reflectance spectroscopy. The photocatalytic properties of the cobalt-doped tungsten oxide mesocrystals were evaluated on the basis of their ability to degrade methyl orange in an aqueous solution under simulated sunlight irradiation. Results showed that the cobalt doping had obvious effect on the morphologies of the final products, and lenticular and blocky cobalt-doped tungsten oxide mesocrystals could be obtained with 1.0 wt.% and 2.0 wt.% cobalt doping, respectively. The cobalt-doped tungsten oxides exhibited superior photocatalytic activities to that of the undoped tungsten oxide. - Graphical abstract: Schematic illustrations of the growth of the bundled nanowires, lenticular mesocrystals, and blocky mesocrystals. Highlights: Black-Right-Pointing-Pointer Co-doped W{sub 18}O{sub 49} mesocrystals were synthesized using a solvothermal method. Black-Right-Pointing-Pointer The Co doping has obvious effect on the morphology of the final mesocrystals. Black-Right-Pointing-Pointer The Co-doped W{sub 18}O{sub 49} exhibited superior photocatalytic activity to the undoped W{sub 18}O{sub 49}.

  16. Preparation and photocatalytic activity of nonmetal Co-doped titanium dioxide photocatalyst

    NASA Astrophysics Data System (ADS)

    Sun, Xiaogang; Xing, Jun; Qiu, Jingping

    2016-06-01

    A series of boron and sulfur co-doped titanium dioxide (TiO2) photocatalysts were prepared by a sol-gel method using boric acid, thiourea and tetrabutyl titanate [Ti(OC4H9)4] as precursors. The photoabsorbance of as-prepared photocatalysts was measured by UV-Vis diffuse reflectance spectroscopy (DRS), and its microstructure was characterized by scanning electron microscopy (SEM), X-ray diffraction (XRD) and N2 adsorption-desorption measurements. The prepared photocatalysts consisted of the anatase phase mainly in the form of spherical particles. The photocatalytic performance was studied by photodegradation of methyl blue (MB) in water under UV and visible light irradiation. The calcination temperature and the codoping content influenced the photoactivity. The synergistic effect of boron and sulfur co-doping played an important role in improving the photocatalytic activity. In addition, the possibility of cyclic usage of codoped TiO2 was also confirmed, the photocatalytic activity of TiO2 remained above 91% of that of the fresh sample after being used four times. It was shown that the co-doped TiO2 could be activated by visible light and could thus be potentially applied for the treatment of water contaminated by organic pollutants.

  17. Physical mechanism of resistance switching in the co-doped RRAM

    NASA Astrophysics Data System (ADS)

    Yang, Jin; Dai, Yuehua; Lu, Shibin; Jiang, Xianwei; Wang, Feifei; Chen, Junning

    2017-01-01

    The physical mechanism of the resistance switching for RRAM with co-doped defects (Ag and oxygen vacancy) is studied based on the first principle calculations and the simulation tool VASP. The interaction energy, formation energy and density of states of Ag and oxygen vacancy defect (VO) are calculated. The calculated results reveal that the co-doped system is more stable than the system only doped either Ag or VO defect and the impurity energy levels in the band gap are contributed by Ag and VO defects. The obtained partial charge density confirmed further that the clusters are obvious in the direction of Ag to Hf ions, which means that it is Ag but VO plays a role of conductive paths. For the formation mechanism, the modified electron affinity and the partial charge density difference are calculated. The results show that the ability of electron donors of Ag is stronger than VO In conclusion, the conductivity of the physical mechanism of resistance switching in the co-doped system mainly depends on the doped Ag. Project supported by the National Natural Science Foundation of China (No. 61376106), the Research Foundation of Education Bureau of Anhui Province, China (Nos. KJ2015A276, KJ2016A574, KJ2014A208), and the Special Foundation for Young Scientists of Hefei Normal University (No. 2015rcjj02).

  18. HPHT synthesis of N-H co-doped diamond single crystals

    NASA Astrophysics Data System (ADS)

    Fang, Chao; Jia, Xiaopeng; Chen, Ning; Li, Yadong; Guo, Longsuo; Chen, Liangchao; Ma, Hong-an; Liu, Xiaobing

    2016-02-01

    In this paper, a series of nitrogen and hydrogen elements (N-H) co-doped diamond single crystals were synthesized in the NiMnCo-C system with melamine (C3N6H6) additive by temperature gradient growth (TGG) method under high-pressure and high-temperature (HPHT). High nitrogen and hydrogen growth environment obviously reduces the growth rate of the diamond. The synthetic diamond crystals are octahedral shape with a green or dark green color. This results indicate that the morphology of the synthetic N-H co-doped gem-diamond can be well-controlled by TGG method. Fourier transform infrared spectroscopy (FTIR) indicate that high-quality diamond single crystals with nitrogen concentrations up to 2100 ppm have been successfully synthesized and the hydrogen related peaks at 2850 cm-1 (sp3-CH3) and 2920 cm-1 (sp3-CH2-) are found in these synthetic diamond. Meanwhile, with the increasing of C-centers the nitrogen atoms aggregate and form into A-centers in these synthetic diamonds. This is the highest quality of N-H co-doped gem-diamond single crystal synthesized in high nitrogen and high hydrogen growth environment reported so far.

  19. Synthesis and characterization of Ce, Cu co-doped ZnS nanoparticles

    NASA Astrophysics Data System (ADS)

    Harish, G. S.; Sreedhara Reddy, P.

    2015-09-01

    Ce, Cu co-doped ZnS nanoparticles were prepared at room temperature using a chemical co-precipitation method. The prepared nanoparticles were characterized by X- ray diffraction (XRD), scanning electron microscopy (SEM), transmission electron microscopy (TEM), energy dispersive analysis of X-rays (EDAX), diffuse reflectance spectroscopy (DRS), photoluminescence (PL) and high resolution Raman spectroscopic techniques. Transmission electron microscopy (TEM) and X-ray diffraction studies showed that the diameter of the particles was around 2-3 nm. Broadened XRD peaks revealed the formation of nanoparticles with a face centered cubic (fcc) structure. DRS studies confirmed that the band gap increased with an increase in the dopant concentration. The Raman spectra of undoped and Ce, Cu ions co-doped ZnS nanoparticles showed longitudinal optical mode and transverse optical mode. Compared with the Raman modes (276 and 351 cm-1) of undoped ZnS nanoparticles, the Raman modes of Ce, Cu co- doped ZnS nanoparticles were slightly shifted towards lower frequency. PL spectra of the samples showed remarkable enhancement in the intensity upon doping.

  20. Micro/Nano hierarchical peony-like Al doped ZnO superhydrophobic film: The guiding effect of (100) preferred seed layer

    PubMed Central

    Li, Yang; Wang, Jingfeng; Kong, Yi; Zhou, Jia; Wu, Jinzhu; Wang, Gang; Bi, Hai; Wu, Xiaohong; Qin, Wei; Li, Qingkun

    2016-01-01

    In this communication, we present a versatile and controllable strategy for formation of superhydrophobic micro/nano hierarchical Al doped ZnO (AZO) films with a water contact angle (CA) of 170 ± 4°. This strategy involves a two-step layer-by-layer process employing an atomic layer deposition (ALD) technique followed by a hydrothermal method, and the resulting novel AZO surface layer consists of (100) dominant nano-rice-like AZO seed layer (the water CA of 110 ± 4°) covered with micro-peony-like AZO top. The growth mechanisms and superhydrophobic properties of the hierarchical AZO layer are discussed. It is believed that the present route holds promise for future success in the design and development of practical superhydrophobic materials. PMID:26753877

  1. Investigation of the biaxial stress of Al-doped ZnO thin films on a flexible substrate with RF magnetron sputtering

    NASA Astrophysics Data System (ADS)

    Huang, Kuo-Ting; Chen, Hsi-Chao; Cheng, Po-Wei; Chang, Jhe-Ming

    2016-01-01

    Transparent conductive Al-doped ZnO (AZO) thin films were deposited onto poly(ethylene terephthalate) (PET) substrate, using the radio frequency (RF) magnetron sputtering method. The residual stress of flexible electronics was investigated by a double beam shadow moiré interferometer with phase shifting interferometry (PSI). Moreover, the biaxial stress of AZO thin films can be graphically represented by using Mohr’s circle of stress. The residual stress of AZO thin films becomes more compressive with the increase in sputtering power. The maximum residual stress is -1115.74 MPa, and the shearing stress is 490.57 MPa at a sputtering power of 200 W. The trends of residual stress were evidenced by the X-ray diffraction (XRD) patterns and optical properties of AZO thin films. According to the evaluation results of the refractive index and the extinction coefficient, the AZO thin films have better quality when the sputtering power less than 100 W.

  2. Spatial distribution of electrical properties for Al-doped ZnO films deposited by dc magnetron sputtering using various inert gases

    SciTech Connect

    Sato, Yasushi; Ishihara, Keita; Oka, Nobuto; Shigesato, Yuzo

    2010-07-15

    Spatial distribution of electrical properties of Al-doped ZnO (AZO) films deposited by magnetron sputtering was investigated. To adjust the intensity of bombardment by high-energy particles, the AZO films were deposited using Ar, Kr, or Xe gas with varying plasma impedance. The spatial distribution of the electrical properties clearly depends on the sputtering gas. In the case of using Kr or Xe, the resistivity of the films in front of the target center and erosion areas was significantly enhanced, in contrast with Ar. This was attributed to an enhancement in bombardment damage due to the increased sputtering voltages required for Kr or Xe discharges. The increase in plasma impedance was due to the smaller coefficients for secondary-electron emission of the target surface by Kr or Xe impingements, which leads to the larger sputtering voltage.

  3. Micro/Nano hierarchical peony-like Al doped ZnO superhydrophobic film: The guiding effect of (100) preferred seed layer

    NASA Astrophysics Data System (ADS)

    Li, Yang; Wang, Jingfeng; Kong, Yi; Zhou, Jia; Wu, Jinzhu; Wang, Gang; Bi, Hai; Wu, Xiaohong; Qin, Wei; Li, Qingkun

    2016-01-01

    In this communication, we present a versatile and controllable strategy for formation of superhydrophobic micro/nano hierarchical Al doped ZnO (AZO) films with a water contact angle (CA) of 170 ± 4°. This strategy involves a two-step layer-by-layer process employing an atomic layer deposition (ALD) technique followed by a hydrothermal method, and the resulting novel AZO surface layer consists of (100) dominant nano-rice-like AZO seed layer (the water CA of 110 ± 4°) covered with micro-peony-like AZO top. The growth mechanisms and superhydrophobic properties of the hierarchical AZO layer are discussed. It is believed that the present route holds promise for future success in the design and development of practical superhydrophobic materials.

  4. γ irradiation induced effects on bismuth active centres and related photoluminescence properties of Bi/Er co-doped optical fibres

    NASA Astrophysics Data System (ADS)

    Sporea, D.; Mihai, L.; Neguţ, D.; Luo, Yanhua; Yan, Binbin; Ding, Mingjie; Wei, Shuen; Peng, Gang-Ding

    2016-07-01

    We investigate the effects of γ irradiation on bismuth active centres (BACs) and related photoluminescence properties of bismuth/erbium co-doped silica fibre (BEDF), [Si] ~28, [Ge] ~1.60, [Al] ~0.10, [Er] ~ <0.10 and [Bi] ~0.10 atom%, fabricated by in-situ solution doping and Modified Chemical Vapor Deposition (MCVD). The samples were irradiated at 1 kGy, 5 kGy, 15 kGy, 30 kGy and 50 kGy doses, and dose rate of 5.5 kGy/h, at room temperature. The optical properties of BEDF samples are tested before and after γ irradiation. We found that high dose γ irradiation could significantly influence the formation and composition of BACs and their photoluminescence performance, as important changes in absorption and emission properties associated with the 830 nm pump produces the direct evidence of γ irradiation effects on BAC-Si. We notice that the saturable to unsaturable absorption ratio at pump wavelength could be increased with high dose γ irradiation, indicating that emission and pump efficiency could be increased by γ irradiation. Our experimental results also reveal good radiation survivability of the BEDF under low and moderate γ irradiation. Our investigation suggests the existence of irradiation related processing available for tailoring the photoluminescence properties and performance of bismuth doped/co-doped fibres.

  5. γ irradiation induced effects on bismuth active centres and related photoluminescence properties of Bi/Er co-doped optical fibres

    PubMed Central

    Sporea, D.; Mihai, L.; Neguţ, D.; Luo, Yanhua; Yan, Binbin; Ding, Mingjie; Wei, Shuen; Peng, Gang-Ding

    2016-01-01

    We investigate the effects of γ irradiation on bismuth active centres (BACs) and related photoluminescence properties of bismuth/erbium co-doped silica fibre (BEDF), [Si] ~28, [Ge] ~1.60, [Al] ~0.10, [Er] ~ <0.10 and [Bi] ~0.10 atom%, fabricated by in-situ solution doping and Modified Chemical Vapor Deposition (MCVD). The samples were irradiated at 1 kGy, 5 kGy, 15 kGy, 30 kGy and 50 kGy doses, and dose rate of 5.5 kGy/h, at room temperature. The optical properties of BEDF samples are tested before and after γ irradiation. We found that high dose γ irradiation could significantly influence the formation and composition of BACs and their photoluminescence performance, as important changes in absorption and emission properties associated with the 830 nm pump produces the direct evidence of γ irradiation effects on BAC-Si. We notice that the saturable to unsaturable absorption ratio at pump wavelength could be increased with high dose γ irradiation, indicating that emission and pump efficiency could be increased by γ irradiation. Our experimental results also reveal good radiation survivability of the BEDF under low and moderate γ irradiation. Our investigation suggests the existence of irradiation related processing available for tailoring the photoluminescence properties and performance of bismuth doped/co-doped fibres. PMID:27440386

  6. Realizing a facile and environmental-friendly fabrication of high-performance multi-crystalline silicon solar cells by employing ZnO nanostructures and an Al2O3 passivation layer

    PubMed Central

    Chen, Hong-Yan; Lu, Hong-Liang; Sun, Long; Ren, Qing-Hua; Zhang, Hao; Ji, Xin-Ming; Liu, Wen-Jun; Ding, Shi-Jin; Yang, Xiao-Feng; Zhang, David Wei

    2016-01-01

    Nowadays, the multi-crystalline silicon (mc-Si) solar cells dominate the photovoltaic industry. However, the current acid etching method on mc-Si surface used by firms can hardly suppress the average reflectance value below 25% in the visible light spectrum. Meanwhile, the nitric acid and the hydrofluoric contained in the etching solution is both environmental unfriendly and highly toxic to human. Here, a mc-Si solar cell based on ZnO nanostructures and an Al2O3 spacer layer is demonstrated. The eco-friendly fabrication is realized by low temperature atomic layer deposition of Al2O3 layer as well as ZnO seed layer. Moreover, the ZnO nanostructures are prepared by nontoxic and low cost hydro-thermal growth process. Results show that the best passivation quality of the n+ -type mc-Si surface can be achieved by balancing the Si dangling bond saturation level and the negative charge concentration in the Al2O3 film. Moreover, the average reflectance on cell surface can be suppressed to 8.2% in 400–900 nm range by controlling the thickness of ZnO seed layer. With these two combined refinements, a maximum solar cell efficiency of 15.8% is obtained eventually. This work offer a facile way to realize the environmental friendly fabrication of high performance mc-Si solar cells. PMID:27924911

  7. Realizing a facile and environmental-friendly fabrication of high-performance multi-crystalline silicon solar cells by employing ZnO nanostructures and an Al2O3 passivation layer

    NASA Astrophysics Data System (ADS)

    Chen, Hong-Yan; Lu, Hong-Liang; Sun, Long; Ren, Qing-Hua; Zhang, Hao; Ji, Xin-Ming; Liu, Wen-Jun; Ding, Shi-Jin; Yang, Xiao-Feng; Zhang, David Wei

    2016-12-01

    Nowadays, the multi-crystalline silicon (mc-Si) solar cells dominate the photovoltaic industry. However, the current acid etching method on mc-Si surface used by firms can hardly suppress the average reflectance value below 25% in the visible light spectrum. Meanwhile, the nitric acid and the hydrofluoric contained in the etching solution is both environmental unfriendly and highly toxic to human. Here, a mc-Si solar cell based on ZnO nanostructures and an Al2O3 spacer layer is demonstrated. The eco-friendly fabrication is realized by low temperature atomic layer deposition of Al2O3 layer as well as ZnO seed layer. Moreover, the ZnO nanostructures are prepared by nontoxic and low cost hydro-thermal growth process. Results show that the best passivation quality of the n+ -type mc-Si surface can be achieved by balancing the Si dangling bond saturation level and the negative charge concentration in the Al2O3 film. Moreover, the average reflectance on cell surface can be suppressed to 8.2% in 400–900 nm range by controlling the thickness of ZnO seed layer. With these two combined refinements, a maximum solar cell efficiency of 15.8% is obtained eventually. This work offer a facile way to realize the environmental friendly fabrication of high performance mc-Si solar cells.

  8. Reversible Change in Electrical and Optical Properties in Epitaxially Grown Al-Doped ZnO Thin Films

    SciTech Connect

    Noh, J. H.; Jung, H. S.; Lee, J. K.; Kim, J. Y; Cho, C. M.; An, J.; Hong, K. S.

    2008-01-01

    Aluminum-doped ZnO (AZO) films were epitaxially grown on sapphire (0001) substrates using pulsed laser deposition. As-deposited AZO films had a low resistivity of 8.01 x 10{sup -4} {Omega} cm. However, after annealing at 450 C in air, the electrical resistivity of the AZO films increased to 1.97 x 10{sup -1} {Omega} cm because of a decrease in the carrier concentration. Subsequent annealing of the air-annealed AZO films in H{sub 2} recovered the electrical conductivity of the AZO films. In addition, the conductivity change was reversible upon repeated air and H{sub 2} annealing. A photoluminescence study showed that oxygen interstitial (O{sub i}) is a critical material parameter allowing for the reversible control of the electrical conducting properties of AZO films.

  9. A comparative investigation on structure and multiferroic properties of bismuth ferrite thin films by multielement co-doping

    SciTech Connect

    Dong, Guohua; Tan, Guoqiang Luo, Yangyang; Liu, Wenlong; Xia, Ao; Ren, Huijun

    2014-12-15

    Highlights: • Multielement (Tb, Cr and Mn) co-doped BiFeO{sub 3} films were fabricated by CSD method. • Multielement co-doping induces a structural transition. • It is found effective to stabilize the valence of Fe ions at +3 by the strategy. • The co-doping at A/B-sites gives rise to the superior multiferroic properties. - Abstract: (Tb, Cr and Mn) multielement co-doped BiFeO{sub 3} (BTFCMO) thin films were prepared by the chemical solution deposition method on fluorine doped tin oxide (FTO) substrates. X-ray diffraction, Rietveld refinement and Raman analyses revealed that a phase transition from rhombohedral to triclinic structure occurs in the multielement co-doped BiFeO{sub 3} films. It is found that the doping is conducive to stabilizing the valence of Fe ions and reducing leakage current. In addition, the highly enhanced ferroelectric properties with a huge remanent polarization (2P{sub r}) of 239.6 μC/cm{sup 2} and a low coercive field (2E{sub c}) of 615.6 kV/cm are ascribed to the well film texture, the structure transition and the reduced leakage current by the co-doping. Moreover, the structure transition is the dominant factor resulting in the significant enhancement observed in magnetization (M{sub s} ∼ 10.5 emu/cm{sup 3}), owing to the collapse of the space-modulated spin structure. In this contribution, these results demonstrate that the multielement co-doping is in favor of the enhanced multiferroic properties of the BFO films for possible multifunctional applications.

  10. Spectroscopic properties of Er3+/Yb3+ Co-doped zinc boro-tellurite glasses for 1.5 xB5m broadband optical amplifiers

    NASA Astrophysics Data System (ADS)

    Suthanthirakumar, P.; Karthikeyan, P.; Vijayakumar, R.; Marimuthu, K.

    2015-06-01

    A new series of Er3+/Yb3+ co-doped Zinc boro-tellurite glasses with the chemical composition (40-x-y)B2O3+ 25TeO2+20ZnO+15BaO+xYb2O3+yEr2O3 (where x = 0.1, 0.5, 1 and 3; y =1 in wt %) were prepared by melt quenching technique and their spectroscopic behavior were studied through UV-Vis-NIR absorption and NIR luminescence measurements. The bonding parameters (β ¯ and δ) and Judd-Ofelt (JO) intensity parameters Ωλ (λ=2, 4 and 6) have been calculated from the band positions of the absorption spectra. A broad near-infrared emission band at 1540 nm with a full width at half maximum around 80 nm was observed from the NIR luminescence spectra by monitoring an excitation at 980 nm. The absorption cross-section and emission cross-section for the4I13/2→4I15/2 transition of the Er3+ ions were also determined using McCumber theory and the results were discussed and reported.

  11. Homoepitaxial ZnO Film Growth

    NASA Technical Reports Server (NTRS)

    Zhu, Shen; Su, C-H; Lehoczky, S. L.; Harris, M. T.; Callahan, M. J.; McCarty, P.; George, M. A.; Rose, M. Franklin (Technical Monitor)

    2000-01-01

    ZnO films have high potential for many applications, such as surface acoustic wave filters, UV detectors, and light emitting devices due to its structural, electrical, and optical properties. High quality epitaxial films are required for these applications. The Al2O3 substrate is commonly used for ZnO heteroepitaxial growth. Recently, high quality ZnO single crystals are available for grow homoepitaxial films. Epitaxial ZnO films were grown on the two polar surfaces (O-face and Zn-face) of (0001) ZnO single crystal substrates using off-axis magnetron sputtering deposition. As a comparison, films were also deposited on (0001) Al2O3 substrates. It was found that the two polar ZnO surfaces have different photoluminescence (PL) spectrum, surface structure and morphology, which strongly influence the epitaxial film growth. The morphology and structure of homoepitaxial films grown on the ZnO substrates were different from heteroepitaxial films grown on the Al2O3. An interesting result shows that high temperature annealing of ZnO single crystals will improve the surface structure on the O-face surface rather than the opposite surface. The measurements of PL, low-angle incident x-ray diffraction, and atomic force microscopy of ZnO films indicate that the O-terminated surface is better for ZnO epitaxial film growth.

  12. Spectroscopic properties and energy transfer in Er-Tm co-doped bismuth silicate glass

    NASA Astrophysics Data System (ADS)

    Wang, Xin; Li, Zhilan; Li, Kefeng; Zhang, Lei; Cheng, Jimeng; Hu, Lili

    2013-10-01

    In this paper, we investigate the spectroscopic properties of and energy transfer processes in Er-Tm co-doped bismuth silicate glass. The Judd-Ofelt parameters of Er3+ and Tm3+ are calculated, and the similar values indicate that the local environments of these two kinds of rare earth ions are almost the same. When the samples are pumped at 980 nm, the emission intensity ratio of Tm:3F4 → 3H6 to Er:4I13/2 → 4I15/2 increases with increased Er3+ and Tm3+ contents, indicating energy transfer from Er:4I13/2 to Tm:3F4. When the samples are pumped at 800 nm, the emission intensity ratio of Er:4I13/2 → 4I15/2 to Tm:3H4 → 3F4 increases with increased Tm2O3 concentration, indicating energy transfer from Tm:3H4 to Er:4I13/2. The rate equations are given to explain the variations. The microscopic and macroscopic energy transfer parameters are calculated, and the values of energy transfer from Er:4I13/2 to Tm:3F4 are found to be higher than those of the other processes. For the Tm singly-doped glass pumped at 800 nm and Er-Tm co-doped glass pumped at 980 nm, the pumping rate needed to realize population reversion is calculated. The result shows that when the Er2O3 doping level is high, pumping the co-doped glass by a 980 nm laser is an effective way of obtaining a low-threshold ˜2 μm gain.

  13. Europium and potassium co-doped strontium metaborate single crystals grown by the Czochralski method

    NASA Astrophysics Data System (ADS)

    Głowacki, Michał; Solarz, Piotr; Ryba-Romanowski, Witold; Martín, Inocencio R.; Diduszko, Ryszard; Berkowski, Marek

    2017-01-01

    Strontium metaborate (SrB2O4) is a suitable material for use as a matrix for luminescent dopant ions. Similarity of ionic radii of strontium and divalent europium makes it an excellent host for Eu dopant. This paper reports on the Czochralski growth and spectroscopic study of SrB2O4 single crystals doped with europium and co-doped with europium and potassium. Based on recorded luminescence spectra it was found that both Eu3+ and Eu2+ ions occur in this host. Trivalent europium ions give rise to a narrow-band long-lived red luminescence that is not affected by incorporation of potassium ions. Divalent europium ions emit a UV-blue luminescence, consisting of a large spectral band centered at ca 430 nm. In the absence of potassium ions the decay of this luminescence deviates slightly from a single exponential time dependence with a mean lifetime value of 2.0 ns. In potassium-co-doped sample a strong deviation from a single exponential decay was observed for longer stages of decay, beginning at ca 2.5 ns. This phenomenon was attributed to dissimilarity of relaxation rates of a fraction of europium ions distributed in different lattice sites that are distorted by the presence of big potassium ions. By co-doping the host with alkali ions one can influence the oxidation state of europium ions thereby enhancing the emission of trivalent europium ions. It was concluded that the material under study is a promising phosphor for visible light emission applications.

  14. Preparation and properties of sliver and nitrogen co-doped TiO{sub 2} photocatalyst

    SciTech Connect

    Zhang, Ying; Zhang, Jin; Zhu, Zhongqi; Yan, Ningning; Liu, Qingju

    2013-11-15

    Graphical abstract: - Highlights: • The silver and nitrogen co-doped TiO{sub 2} photocatalysts were prepared and characterized. • The light absorption threshold wavelength of Ag–N–TiO{sub 2} is red-shifted to visible light. • The recombination of the photo-generated electrons and holes of Ag–N–TiO{sub 2} is inhibited. • The photocatalytic activity of Ag–N–TiO{sub 2} is remarkable improved. - Abstract: TiO{sub 2} photocatalysts co-doped with different content of Ag and N were prepared by sol–gel method combined with microwave chemical method. The samples were analyzed by X-ray diffraction (XRD), Fourier transform infrared spectroscopy (FT-IR), transmission electron microscope (TEM), ultraviolet–visible diffuse reflectance spectrum (UV–vis) and photo-luminescence emission spectrum (PL). The photocatalytic activity was investigated by photocatalytic degradation of methylene blue (MB) under irradiation of fluorescent lamp. The results indicate that Ag and N co-doping can restrain the increase of grain size, broaden the absorption spectrum to visible light region, and inhibit the recombination of the photo-generated electron–hole pairs. Moreover, the photocatalytic activity of Ag–N–TiO{sub 2} in MB degradation is remarkable improved. The degradation rate of the sample with Ag:TiO{sub 2} = 0.05 at%, N:TiO{sub 2} = 18.50 wt% in 5 h is 93.44%, which is much higher than that of Degussa P25 (39.40%)

  15. Room-temperature ferromagnetism in lightly Cr-doped ZnO nanoparticles

    NASA Astrophysics Data System (ADS)

    Duan, L. B.; Zhao, X. R.; Liu, J. M.; Wang, T.; Rao, G. H.

    2010-06-01

    Zn1- x Cr x O (0≤ x≤0.15) nanoparticles were synthesized by an auto-combustion method and characterized by x-ray diffraction and Raman scattering techniques. The solubility limit for Cr in ZnO was determined as x≈0.03. Room-temperature ferromagnetism (RT-FM) was observed in lightly Cr-doped ZnO nanoparticles with x=0.01 and 0.02. Raman scattering spectra of the lightly Cr-doped and Co-doped ZnO were studied and compared. The enhancement of both the magnetization and the intensity of Raman scattering peak associated with donor defects (Zni and/or VO) and carriers indicates that light Cr doping in ZnO could be an effective way to achieve pronounced RT-FM and the ferromagnetism is closely related to the dopant-donor hybridization besides the ferromagnetic Cr-O-Cr superexchange interactions.

  16. Understanding ferromagnetism in Co-doped Ti O2 anatase from first principles

    NASA Astrophysics Data System (ADS)

    Janisch, Rebecca; Spaldin, Nicola A.

    2006-01-01

    We present a first-principles computational study of the nature and origin of ferromagnetism in Co-doped TiO2 . We calculate the magnetic ordering and electronic properties as a function of the concentration and distribution of Co dopants and oxygen vacancies. We find that Co atoms prefer to substitute on neighboring sites of the Ti lattice, and show, using the well-established Goodenough-Kanamori-Anderson rules, that this leads to a ferromagnetic superexchange. We propose other semiconductor hosts in which the superexchange mechanism should lead to ferromagnetic coupling between the magnetic moments of neighboring transition metal dopants.

  17. Superconductivity in fluorine and yttrium co-doped SmFeAsO

    NASA Astrophysics Data System (ADS)

    Lai, K. T.; Kwong, F. L.; Ng, Dickon H. L.

    2012-05-01

    Polycrystalline fluorine and yttrium co-doped SmFeAsO samples are synthesized by solid state sintering and their physical properties are studied. The lattice parameters of the Sm1-yYyFeAsO0.8F0.2 samples decrease with the increasing y due to the smaller Y ions and the stiffness of the Y-O bond. The maximum critical temperature Tc of the samples is at y = 0.05. This may be due to the fact that the strong interaction between Sm and Fe of the Fe-As bond is being re-disturbed by the doped Y ions.

  18. Absolute quantum cutting efficiency of Tb3+-Yb3+ co-doped glass

    NASA Astrophysics Data System (ADS)

    Duan, Qianqian; Qin, Feng; Zhao, Hua; Zhang, Zhiguo; Cao, Wenwu

    2013-12-01

    The absolute quantum cutting efficiency of Tb3+-Yb3+ co-doped glass was quantitatively measured by an integrating sphere detection system, which is independent of the excitation power. As the Yb3+ concentration increases, the near infrared quantum efficiency exhibited an exponential growth with an upper limit of 13.5%, but the visible light efficiency was reduced rapidly. As a result, the total quantum efficiency monotonically decreases rather than increases as theory predicted. In fact, the absolute quantum efficiency was far less than the theoretical value due to the low radiative efficiency of Tb3+ (<61%) and significant cross-relaxation nonradiative loss between Yb3+ ions.

  19. Ferromagnetism in Co-doped (La,Sr)TiO3

    SciTech Connect

    Fix, T.; Liberati, M.; Aubriet, H.; Sahonta, S.-L.; Bali, R.; Becker, C.; Ruch, D.; MacManus-Driscoll, J.L.; Arenholz, E.; Blamire, M.G.

    2009-04-21

    The origin of ferromagnetism in Co-doped (La,Sr)TiO{sub 3} epitaxial thin films is discussed. While the as-grown samples are not ferromagnetic at room temperature or at 10 K, ferromagnetism at room temperature appears after annealing the films in reducing conditions and disappears after annealing in oxidizing conditions. Magnetic measurements, x-ray absorption spectroscopy, x-ray photoemission spectroscopy and transmission electron microscopy experiments indicate that within the resolution of the instruments the activation of the ferromagnetism is not due to the presence of pure Co.

  20. Co-doping Strategy for Developing Perovskite Oxides as Highly Efficient Electrocatalysts for Oxygen Evolution Reaction.

    PubMed

    Xu, Xiaomin; Su, Chao; Zhou, Wei; Zhu, Yinlong; Chen, Yubo; Shao, Zongping

    2016-02-01

    A synergistic co-doping strategy is proposed to identify a series of BaCo0.9-x Fe x Sn0.1O3-δ perovskites with tunable electrocatalytic activity for the oxygen evolution reaction (OER). Simply through tailoring the relative concentrations of less OER-active tin and iron dopants, a cubic perovskite structure (BaCo0.7Fe0.2Sn0.1O3-δ) is stabilized, showing intrinsic OER activity >1 order of magnitude larger than IrO2 and a Tafel slope of 69 mV dec(-1).

  1. Corrosion Protection of Copper Using Al2O3, TiO2, ZnO, HfO2, and ZrO2 Atomic Layer Deposition.

    PubMed

    Daubert, James S; Hill, Grant T; Gotsch, Hannah N; Gremaud, Antoine P; Ovental, Jennifer S; Williams, Philip S; Oldham, Christopher J; Parsons, Gregory N

    2017-02-01

    Atomic layer deposition (ALD) is a viable means to add corrosion protection to copper metal. Ultrathin films of Al2O3, TiO2, ZnO, HfO2, and ZrO2 were deposited on copper metal using ALD, and their corrosion protection properties were measured using electrochemical impedance spectroscopy (EIS) and linear sweep voltammetry (LSV). Analysis of ∼50 nm thick films of each metal oxide demonstrated low electrochemical porosity and provided enhanced corrosion protection from aqueous NaCl solution. The surface pretreatment and roughness was found to affect the extent of the corrosion protection. Films of Al2O3 or HfO2 provided the highest level of initial corrosion protection, but films of HfO2 exhibited the best coating quality after extended exposure. This is the first reported instance of using ultrathin films of HfO2 or ZrO2 produced with ALD for corrosion protection, and both are promising materials for corrosion protection.

  2. Influence of praseodymium and nitrogen co-doping on the photocatalytic activity of TiO{sub 2}

    SciTech Connect

    Wu, Jing; Liu, Qingju; Gao, Pan; Zhu, Zhongqi

    2011-11-15

    Highlights: {yields} The praseodymium and nitrogen co-doped TiO{sub 2} (Pr-N-TiO{sub 2}) powders were prepared and characterized. {yields} The effects on the photocatalytic activity were studied. {yields} The results exhibit that the spectrum absorption region of the co-doped sample is red-shifted to visible light and the recombination of the photo-generated pairs is inhibited. {yields} The photocatalytic activity is greatly improved. -- Abstract: TiO{sub 2} nanoparticles co-doped with different doping concentration of Pr and N were prepared by sol-gel method combined with microwave chemical method. The samples were characterized by XRD, FT-IR, UV-vis, TEM, XPS, PL, and the photocatalytic activity were investigated by photocatalytic degradation of methylene blue (MB). The results indicate that Pr and N ions incorporate into the lattice of TiO{sub 2}, co-doping restrains the increase of grain size, broadens the absorption region to visible light, and inhibits the recombination of the photo-generated electrons and holes. Moreover, the photocatalytic activity of Pr-N-TiO{sub 2} is remarkable improved due to the synergistic effect of the co-doped ions. The degradation rate of MB in 6 h is 92.81%, which is much higher than that of Degussa P25 (45.01%).

  3. Degradation of nitrobenzene using titania photocatalyst co-doped with nitrogen and cerium under visible light illumination.

    PubMed

    Shen, Xiang-Zhong; Liu, Zhi-Cheng; Xie, Shan-Mei; Guo, Jun

    2009-03-15

    A type of nitrogen and cerium co-doped titania photocatalyst, which could degrade nitrobenzene under visible light irradiation, was prepared by the sol-gel route. Titanium isopropoxide, ammonium nitrate, and cerium nitrate were used as the sources of titanium, nitrogen, and cerium, respectively. X-ray diffraction (XRD), X-ray photoelectron spectroscopy (XPS), UV-vis diffusive reflectance spectroscopy (DRS), scanning electron microscopy (SEM), and N(2) adsorption-desorption isotherm were employed to characterize the as-prepared photocatalyst. The degradation of nitrobenzene under visible light illumination was taken as probe reaction to evaluate the photoactivity of the co-doped photocatalyst. The commercial TiO(2) photocatalyst (Degussa P25), which was thought as a high active photocatalyst, was chosen as standard photocatalyst to contrast the photoactivity of the nitrogen and cerium co-doped titania photocatalyst. The results showed that the photocatalytic performance of the nitrogen and cerium co-doped titania was related with the calcination temperature and the component. The nitrogen atoms were incorporated into the crystal of titania and could narrow the band gap energy. The doping cerium atoms existed in the forms of Ce(2)O(3) and dispersed on the surface of TiO(2). The improvement of the photocatalytic activity was ascribed to the synergistic effects of the nitrogen and cerium co-doping.

  4. Electronic and optical properties study on Fesbnd B co-doped anatase TiO2

    NASA Astrophysics Data System (ADS)

    Li, Xuechao; Shi, Jianhao; Chen, Hao; Wan, Rundong; Leng, Chongyan; Lei, Ying

    2016-09-01

    We investigate the density of states and optical properties for Fe, 2B and (Fe, 2B) doped TiO2 with DFT calculations. The calculated results reveal mono-doping introduces midgap states which are half-occupied and easy to become the recombination centers of charge carriers, thus inhibiting the enhancement of photocatalystic activity. The coupling of 2p-3d states in the (Fe, 2B) compensated co-doped TiO2 makes gap states couple with the valence bands edge, thus greatly causing the band gap narrowing and higher visible light absorption. Moreover, the gap states cannot become recombination centers of the photoexcited carriers, thus promoting the separation of electron-hole pairs, prolonging the lifetime of carriers. The analysis of electron density indicates more electrons from Fe transfer to adjacent B, realizing the charge compensation and forming a stronger Fesbnd B bond. Therefore, the (Fe, 2B) compensated co-doped TiO2 exhibits the higher visible-light photocatalystic activity than those of pure and solely doped TiO2.

  5. Photocatalytic decomposition of perfluorooctanoic acid by iron and niobium co-doped titanium dioxide.

    PubMed

    Estrellan, Carl Renan; Salim, Chris; Hinode, Hirofumi

    2010-07-15

    The photocatalytic decomposition of perfluorooctanoic acid (PFOA) in aqueous solution using Fe and Nb co-doped TiO(2) (Fe:Nb-TiO(2)) prepared by sol-gel method was investigated. The photocatalytic activity of Fe:Nb-TiO(2) towards PFOA degradation was compared to that of pure TiO(2) synthesized using the same method, and that of the commercially available TiO(2) photocatalyst, Aeroxide TiO(2) P25 (AO-TiO(2) P25). The photocatalysts were characterized by XRD, DRS, BET-N(2) adsorption isotherm, and SEM-EDX techniques and the data were correlated to the photocatalytic activity. Fe:Nb-TiO(2) showed the highest activity compared to the undoped TiO(2) and the commercially available TiO(2). Such activity was attributable to the effects of co-doping both on the physico-chemical properties and surface interfacial charge transfer mechanisms. Perfluorocarboxylic acids (PFCAs) with shorter carbon chain length and fluoride ions were identified as photocatalytic reaction intermediates and products.

  6. Luminescent properties of Tm3+/ Ho3+ co-doped LiYF4 crystals

    NASA Astrophysics Data System (ADS)

    Li, Shan-shan; Xia, Hai-ping; Dong, Yan-ming; Fu, Li; Gu, Xue-mei; Zhang, Jian-li; Wang, Dong-jie; Jiang, Hao-chuan; Chen, Bao-jiu

    2014-11-01

    Ho3+ with various concentrations and Tm3+ with molar concentration of 1.28% are co-doped in LiYF4 (YLF) single crystals. The luminescent properties of the crystals are investigated through emission spectra, emission cross section and decay curves under the excitation of 808 nm. The energy transfer from Tm3+ to Ho3+ and the optimum fluorescence emission of Ho3+ around 2.05 μm are investigated. The emission intensity at 2.05 μm keeps increasing with the molar concentration of Ho3+ improved from 0.50% to 1.51% when the molar concentration of Tm3+ is kept at 1.28%. Moreover, for the co-doped crystals in which the molar concentrations of Tm3+ and Ho3+ are 1.28% and 1.51%, respectively, the maximum emission cross section reaches 0.760×10-20 cm2 and the maximum fluorescence lifetime is 21.98 ms. All the parameters suggest that these materials have more advantages in the future 2.0 μm laser applications.

  7. Thermoelectric performance of co-doped SnTe with resonant levels

    NASA Astrophysics Data System (ADS)

    Zhou, Min; Gibbs, Zachary M.; Wang, Heng; Han, Yemao; Li, Laifeng; Snyder, G. Jeffrey

    2016-07-01

    Some group III elements such as Indium are known to produce the resonant impurity states in IV-VI compounds. The discovery of these impurity states has opened up new ways for engineering the thermoelectric properties of IV-VI compounds. In this work, resonant states in SnTe were studied by co-doping with both resonant (In) and extrinsic (Ag, I) dopants. A characteristic nonlinear relationship was observed between the Hall carrier concentration (nH) and extrinsic dopant concentration (NI, NAg) in the stabilization region, where a linear increase of dopant concentration does not lead to linear response in the measured nH. Upon substituting extrinsic dopants beyond a certain amount, the nH changed proportionally with additional dopants (Ag, I) (the doping region). The Seebeck coefficients are enhanced as the resonant impurity is introduced, whereas the use of extrinsic doping only induces minor changes. Modest zT enhancements are observed at lower temperatures, which lead to an increase in the average zT values over a broad range of temperatures (300-773 K). The improved average zT obtained through co-doping indicates the promise of fine carrier density control in maximizing the favorable effect of resonant levels for thermoelectric materials.

  8. Synthesis of boron, nitrogen co-doped porous carbon from asphaltene for high-performance supercapacitors

    NASA Astrophysics Data System (ADS)

    Zhou, Ying; Wang, Dao-Long; Wang, Chun-Lei; Jin, Xin-Xin; Qiu, Jie-Shan

    2014-08-01

    Oxidized asphaltene (OA), a thermosetting material with plenty of functional groups, is synthesized from asphaltene (A) using HNO3/H2SO4 as the oxidizing agent. Boron, nitrogen co-doped porous carbon (BNC—OA) is prepared by carbonization of the mixture of boric acid and OA at 1173 K in an argon atmosphere. X-ray photoelectron spectroscopy (XPS) characterization reveals that the BNC—OA has a nitrogen content of 3.26 at.% and a boron content of 1.31 at.%, while its oxidation-free counterpart (BNC—SA) has a nitrogen content of 1.61 at.% and a boron content of 3.02 at.%. The specific surface area and total pore volume of BNC—OA are 1103 m2·g-1 and 0.921 cm3·g-1, respectively. At a current density of 0.1 A·g-1, the specific capacitance of BNC-OA is 335 F·g-1 and the capacitance retention can still reach 83% at 1 A·g-1. The analysis shows that the superior electrochemical performance of the BNC—OA is attributed to the pseudocapacitance behavior of surface heteroatom functional groups and an abundant pore-structure. Boron, nitrogen co-doped porous carbon is a promising electrode material for supercapacitors.

  9. Magnetic properties of gadolinium and carbon co-doped gallium nitride

    NASA Astrophysics Data System (ADS)

    Syed Kaleemullah, N.; Ramsubramanian, S.; Mohankumar, R.; Munawar Basha, S.; Rajagopalan, M.; Kumar, J.

    2017-01-01

    Investigations have been carried out to study the ferromagnetic properties of Gadolinium (Gd) Carbon (C) co-doped wurtzite Gallium Nitride (GaN) using full-potential linear augmented plane wave (FP-LAPW) method within the density functional theory. The system shows half-metallic nature when single Gd is substituted in Ga36N36 supercell. The presence of carbon in GaN supercell is found to generate weak magnetic moment (Ms) in the neighbouring atoms. When Carbon is codoped in the Gd-GaN, it increased the total magnetic moment of the system (Mtot). The cause of ferromagnetism in the Gd and C co-doped GaN has been explained by Zener's p-d exchange mechanism. The role of defects in the magnetic property of this system is also investigated. The results indicate the gallium vacancy influences the magnetic moment of the Gd and C codoped GaN more than the nitrogen vacancy. The presence of holes is effective than electrons in achieving the ferromagnetism in the considered system.

  10. Enhanced stability of Eu in GaN nanoparticles: Effects of Si co-doping

    SciTech Connect

    Kaur, Prabhsharan; Sekhon, S. S.; Zavada, J. M.; Kumar, Vijay

    2015-06-14

    Ab initio calculations on Eu doped (GaN){sub n} (n = 12, 13, and 32) nanoparticles show that Eu doping in nanoparticles is favorable compared with bulk GaN as a large fraction of atoms lie on the surface where strain can be released compared with bulk where often Eu doping is associated with a N vacancy. Co-doping of Si further facilitates Eu doping as strain from an oversized Eu atom and an undersized Si atom is compensated. These results along with low symmetry sites in nanoparticles make them attractive for developing strongly luminescent nanomaterials. The atomic and electronic structures are discussed using generalized gradient approximation (GGA) for the exchange-correlation energy as well as GGA + U formalism. In all cases of Eu (Eu + Si) doping, the magnetic moments are localized on the Eu site with a large value of 6μ{sub B} (7μ{sub B}). Our results suggest that co-doping can be a very useful way to achieve rare-earth doping in different hosts for optoelectronic materials.

  11. The effect of K-na co-doping on the formation and particle size of Bi-2212 phase

    NASA Astrophysics Data System (ADS)

    Kır, M. Ebru; Özkurt, Berdan; Aytekin, M. Ersin

    2016-06-01

    Superconducting K-Na co-doped Bi2Sr2KxCa1Cu1.75Na0.25Oy (x=0, 0.05, 0.1 and 0.25) ceramics are prepared by a solid-state reaction method. It is clearly determined from XRD data that the characteristic peaks of Bi-2212 phase are observed in all samples. The resistivity measurements show that Tc (onset) values is gradually increasing as K content is increased. It is also found that K-Na co-doping influence the grain sizes for Bi-2212 phase significantly. The critical current densities as a function of magnetic field have been calculated from M-H hysteresis loops of samples according to Bean's critical model, indicating that K-Na co-doping cause higher Jc values than the pure ones.

  12. Structural and electronic properties of Mg and Mg-Nb co-doped TiO2 (101) anatase surface

    NASA Astrophysics Data System (ADS)

    Sasani, Alireza; Baktash, Ardeshir; Mirabbaszadeh, Kavoos; Khoshnevisan, Bahram

    2016-10-01

    In this paper, by using density functional theory, Mg and Nb-Mg co-doping of TiO2 anatase (101) surfaces are studied. By studying the formation energy of the defects and the bond length distribution of the surface, it is shown that Mg defects tend to stay as far as possible to induce least possible lattice distortion while Nb and Mg defects stay close to each other to cause less stress to the surface. By investigating band structure of the surface and changes stemmed from the defects, potential effects of Mg and Mg-Nb co-doping of TiO2 surface on dye-sensitized solar cells are investigated. In this study, it is shown that the Nb-Mg co-doping could increase JSC of the surface while slightly decreasing VOC compared to Mg doped surface, which might result in an increase in efficiency of the DSSCs compared to Nb or Mg doped surfaces.

  13. Enhanced dopant solubility and visible-light absorption in Cr-N co-doped TiO2 nanoclusters

    SciTech Connect

    Chiodi, Dr Mirco; Cheney, Christine; Vilmercati, Paolo; Cavaliere, Emanuele; Mannella, Norman; Gavioli, Luca; Weitering, Harm H

    2012-01-01

    A major obstacle toward employing TiO2 as an efficient photoactive material is related to its large optical band gap, strongly limiting visible light absorption. Substitutional doping with both donors and acceptors (co-doping) potentially leads to a significant band gap reduction, but the effectiveness of the co-doping approach remains limited by the low solubility of dopants inside TiO2. Here we show that nanostructured Cr and N co-doped TiO2 thin films can be obtained by Supersonic Cluster Beam Deposition (SCBD) with a high concentration of dopants and a strongly reduced band gap. Complementary spectroscopic investigations show that doping effectively occurs into substitutional lattice sites, inducing dopant levels in the gap that are remarkably delocalized. The high surface-to-volume ratio, typical of SCBD nanostructured films, likely facilitates the dopant incorporation. The present results indicate that SCBD films are highly promising photoactive nanophase materials.

  14. Thermochromic properties of Sn, W co-doped VO2 nanostructured thin film deposited by pulsed laser deposition.

    PubMed

    Hur, M G; Masaki, T; Yoon, D H

    2014-12-01

    Tin (Sn) and tungsten (W) co-doped vanadium dioxide (VO2) nanostructured thin films with 50-nm thickness were deposited by pulsed laser deposition (PLD) to reduce the transition temperature and improve the IR transmittance. The crystal structure of the nanostructured thin films and the presence of elements were evaluated by XRD and XPS analysis. The transition temperature (T(c)) of 1 at% Sn-1 at% W co-doped VO2 nanostructured thin film was decreased to about 22 degrees C (from 70.3 to 48.5 degrees C) compared with the undoped VO2 nanostructured thin film. The transmittance width in the IR range of the co-doped nanostructured thin film decreased from 37.5% to 27% compared with the undoped VO2 nanostructured thin film. Also, the width of hysteresis was narrowed by Sn doping.

  15. W/Mo co-doped BiVO4 for photocatalytic treatment of polymer-containing wastewater in oilfield

    NASA Astrophysics Data System (ADS)

    Zhou, Ying; Li, Wei; Wan, Wenchao; Zhang, Ruiyang; Lin, Yuanhua

    2015-06-01

    Polymer flooding is an effective way to enhance oil recovery (EOR). However, the treatment of the oily wastewater becomes an urgent issue. Photocatalysis is a promising approach for this purpose. In this report, W/Mo co-doped BiVO4 particles are synthesized by hydrothermal method. W/Mo co-doping could promote an effective separation of photogenerated carriers reflecting from the 6 times higher photocurrent density compared to pure BiVO4. The photodegradation of partially hydrolyzed polyacrylamide (HPAM) over 0.5 at.% W and 1.5 at.% Mo co-doped BiVO4 is 43% under UV-vis light irradiation for 3 h, which is much higher than that of pure BiVO4 (18%).

  16. Effect of sputtering power on crystallinity, intrinsic defects, and optical and electrical properties of Al-doped ZnO transparent conducting thin films for optoelectronic devices

    NASA Astrophysics Data System (ADS)

    Hu, Yu Min; Li, Jung Yu; Chen, Nai Yun; Chen, Chih Yu; Han, Tai Chun; Yu, Chin Chung

    2017-02-01

    The crystallinity and intrinsic defects of transparent conducting oxide (TCO) films have a high impact on their optical and electrical properties and therefore on the performance of devices incorporating such films, including flat panel displays, electro-optical devices, and solar cells. The optical and electrical properties of TCO films can be modified by tailoring their deposition parameters, which makes proper understanding of these parameters crucial. Magnetron sputtering is the most adaptable method for preparing TCO films used in industrial applications. In this study, we investigate the direct and inter-property correlation effects of sputtering power (PW) on the crystallinity, intrinsic defects, and optical and electrical properties of Al-doped ZnO (AZO) TCO films. All of the films were preferentially c-axis-oriented with a wurtzite structure and had an average transmittance of over 80% in the visible wavelength region. Scanning electron microscopy images revealed significantly increased AZO film grain sizes for PW ≥ 150 W, which may lead to increased conductivity, carrier concentration, and optical band gaps but decreased carrier mobility and in-plane compressive stress in AZO films. Photoluminescence results showed that, with increasing PW, the near band edge emission gradually dominates the defect-related emissions in which zinc interstitial (Zni), oxygen vacancy (VO), and oxygen interstitial (Oi) are possibly responsible for emissions at 3.08, 2.8, and 2.0 eV, respectively. The presence of Zni- and Oi-related emissions at PW ≥ 150 W indicates a slight increase in the presence of Al atoms substituted at Zn sites (AlZn). The presence of Oi at PW ≥ 150 W was also confirmed by X-ray photoelectron spectroscopy results. These results clearly show that the crystallinity and intrinsic-defect type of AZO films, which dominate their optical and electrical properties, may be controlled by PW. This understanding may facilitate the development of TCO

  17. Synthesis and characterization of Cu, Fe co-doped ZnO nano-particles synthesized by solution combustion method

    NASA Astrophysics Data System (ADS)

    Gupta, Dikshita; Ghanshyam, Kotnala, R. K.; Negi, N. S.

    2013-06-01

    Zn0.94Cu0.01Fe0.05O (ZCFO) nanoparticles were synthesized by chemical solution method and their crystallographic, micro structural and magnetic properties were investigated at different annealing temperatures 100°C, 250°C, and 450°C respectively. Ferromagnetic behavior was observed from VSM at room temperature, ZCFO powder annealed at 100°C shows paramagnetism and those annealed at 250°C, 350°C and 450°C shows distinct ferromagnetic behavior.

  18. Optimized structure stability and electrochemical performance of LiNi0.8Co0.15Al0.05O2 by sputtering nanoscale ZnO film

    NASA Astrophysics Data System (ADS)

    Lai, Yan-Qing; Xu, Ming; Zhang, Zhi-An; Gao, Chun-Hui; Wang, Peng; Yu, Zi-Yang

    2016-03-01

    LiNi0.8Co0.15Al0.05O2 (NCA) is one of the most promising cathode material for lithium-ion batteries (LIBs) in electric vehicles, which is successfully adopted in Tesla. However, the dissolution of the cation into the electrolyte is still a one of the major challenges (fading capacity and poor cyclability, etc.) presented in pristine NCA. Herein, a homogeneous nanoscale ZnO film is directly sputtered on the surface of NCA electrode via the magnetron sputtering (MS). This ZnO film is evidenced by scanning electron microscopy (SEM), transmission electron microscopy (TEM) and X-ray photoelectron spectroscopy (XPS). The results clearly demonstrate that ZnO film is fully and uniformly covered on the NCA electrodes. After 90 cycles at 1.0C, the optimized MS-2min coated NCA electrode delivers much higher discharge capacity with 169 mAh g-1 than that of the pristine NCA electrode with 127 mAh g-1. In addition, the discharge capacity also reaches 166 mAh g-1 at 3.0C, as compared to that of 125 mAh g-1 for the pristine electrode. The improved electrochemical performance can be ascribed to the superiority of the MS ZnO film that reduce charge transfer resistance and protect the NCA electrode from cation dissolution.

  19. Semi-metallic to semiconducting transition in graphene nanosheet with site specific co-doping of boron and nitrogen

    NASA Astrophysics Data System (ADS)

    Nath, Palash; Sanyal, Dirtha; Jana, Debnarayan

    2014-02-01

    Present work reports the modifications of band structure and density of states of graphene nanosheet by substitutional co-doping of boron (B) and nitrogen (N) in the pristine graphene system. Using ab-initio density functional theory (DFT) we show that the doping position plays an important key role to determine the band-gap in the graphene system. Co-doping of B and N at different sub-lattice positions in the planar graphene structure results different modifications in the band structure and density of states (DOS). Particular choice of sub-lattice doping position of B and N yields a finite value of band gap.

  20. Er/Yb co-doped oxy-fluoride glass-ceramics core/polymer cladding optical fibers

    NASA Astrophysics Data System (ADS)

    Czerska, E.; Świderska, M.

    2014-11-01

    Erbium/ytterbium co-doped glasses can be applied as NIR laser sources (1.55 μm) or optical amplifiers in this range. About hundred meters of Er/Yb co-doped oxy-fluoride glass-ceramics fibers have been drawn from a glass preform followed by controlled annealing. Processing temperatures (drawing and annealing) were selected upon thermal analysis results (DTA/DSC plots). Glass-ceramic structure was confirmed by the XRD measurements. Obtained fibers show good optical properties. As a cladding material polymer material (acrylic resin) is considered due to its low deposition temperature and suitable value of refractive index.

  1. ZnO based light emitting diodes growth and fabrication

    NASA Astrophysics Data System (ADS)

    Pan, M.; Rondon, R.; Cloud, J.; Rengarajan, V.; Nemeth, W.; Valencia, A.; Gomez, J.; Spencer, N.; Nause, J.

    2006-02-01

    ZnO and N-doped ZnO thin films were grown by MOCVD on sapphire and ZnO substrates. Diethyl zinc and O II were used as sources for Zn and O, respectively. A specially designed plasma system was employed to produce atomic N dopant for in-situ doping. Proper disk rotation speeds were found for ZnO growth on different size wafers. High crystal quality N-doped ZnO films were grown based on optimized growth conditions. Wet chemical etch of ZnO was investigated by using NH 4Cl, and etch activation energy was calculated to be 463meV. Ohmic contact on N-doped ZnO film was achieved by using Ni/Au/Al multiple layers. ZnO based p-n junction has demonstrated rectification. Electroluminescence at about 384nm was obtained from ZnO based LED.

  2. Origins of Highly Stable Al-evaporated Solution-processed ZnO Thin Film Transistors: Insights from Low Frequency and Random Telegraph Signal Noise

    PubMed Central

    Kim, Joo Hyung; Kang, Tae Sung; Yang, Jung Yup; Hong, Jin Pyo

    2015-01-01

    One long-standing goal in the emerging field of flexible and transparent electronic devices is to meet the demand of key markets, such as enhanced output performance for metal oxide semiconductor thin film transistors (TFTs) prepared by a solution process. While solution-based fabrication techniques are cost-effective and ensure large-area coverage at low temperature, their utilization has the disadvantage of introducing large trap states into TFTs. Such states, the formation of which is induced by intrinsic defects initially produced during preparation, have a significant impact on electrical performance. Therefore, the ability to enhance the electrical characteristics of solution-processed TFTs, along with attaining a firm understanding of their physical nature, remains a key step towards extending their use. In this study, measurements of low-frequency noise and random telegraph signal noise are employed as generic alternative tools to examine the origins of enhanced output performance for solution-processed ZnO TFTs through the control of defect sites by Al evaporation. PMID:26525284

  3. Photo-luminescent properties and synthesis of Ca3Al4ZnO10:Mn4+ deep red-emitting phosphor

    NASA Astrophysics Data System (ADS)

    Cao, Renping; Zhang, Jinlong; Wang, Wudi; Chen, Ting; Gou, Qingdong; Wen, Yufeng; Xiao, Fen; Luo, Zhiyang

    2017-04-01

    Novel deep red-emitting Ca3Al4ZnO10:Mn4+ (CAZO:Mn4+) phosphor is synthesized by high-temperature solid-state reaction method in air. The crystal structures and optical characterizations of the phosphors are described. X-ray diffraction patterns indicate that all samples are a pure phase. CAZO:Mn4+ phosphor with excitation 330 and 465 nm exhibits strong deep red emission in the range of 650-790 nm. CAZO:Mn4+ phosphor can be efficiently excited by near-ultraviolet and blue light from 300 to 500 nm. The optimal Mn4+ ion concentration in CAZO:Mn4+ phosphor is ∼0.6 mol%. Lifetimes of CAZO:xMn4+ (0.3 ≤ x ≤ 1.8 mol%) phosphors decrease from 1.95 to 1.56 ms with increasing Mn4+ ion concentration in the range of 0.3-1.8 mol%. The paper content is help to develop other Mn4+ ion doped luminescence materials.

  4. Characteristics of Ga-Al doped ZnO thin films with plasma treatment prepared by using facing target sputtering method.

    PubMed

    Kim, Ki Hyun; Choi, Hyung Wook; Kim, Kyung Hwan

    2013-09-01

    Ga-Al-doped ZnO (GAZO) thin films were prepared on glass substrates using facing targets sputtering at room temperature. GAZO thin films have been treated in O2 plasma to modify surface roughness in order to enhance the efficiency of OLED anodes made from the films. After deposition of the thin films, the substrate was subjected to plasma surface treatment. The electrical, optical, and surface properties of the deposited thin films were investigated by hall-effect measurement, UV/Vis spectrometry, and atomic force microscopy (AFM), respectively. As a result of increasing the plasma treatment time from 0 to 45 sec, the surface roughness of films after plasma treatment was improved, but their electrical, optical, and structural properties were slightly changed. The lowest values of the surface roughness were 1.409 nm for the as-deposited GAZO thin films for an O2 plasma treatment time of 40 sec. All GAZO thin films have an average transmittance of 90% in the visible range (400-800 nm).

  5. Raman study of TiO2 role in SiO2-Al2O3-MgO-TiO2-ZnO glass crystallization.

    PubMed

    Furić, Kresimir; Stoch, Leszek; Dutkiewicz, Jan

    2005-05-01

    Tough glass-ceramic material of special mechanical properties with nanosize crystal phases formed by appropriately controlled crystallization was studied by Raman spectroscopy. It was obtained by TiO2 activated crystallization of Mg-aluminosilicate glass of SiO2-Al2O3-MgO-TiO2-ZnO composition. Crystallization was preceded by a change in the TiO2 structural position and state, which is manifested by a changed color of glass from yellow into blue shortly before the glass transformation (Tg) temperature. Raman spectroscopy was applied to explain the mechanism of this process and to establish the role of TiO2 in the early stage of glass crystallization that precedes a complete crystal phase formation. The starting glasses were found in almost complete disorder, since all bands were weak, broad and dominated by a Bose band at about 90 cm-1. After the sample annealing all bands turned out better resolved and the Bose band practically disappeared, both confirming the amorphous structure reorganization process. A multiplet observed in the vicinity of 150 cm-1 we assigned to the anatase and other titania structures that can be considered prime centers of crystallization. Finally, in the closest neighborhood of the Rayleigh line the low frequency mode characterizing nanoparticles was observed. According to this band theory, the mean size of initial titania crystallites is about 10nm for all samples, but the size distribution varies within factor two among them.

  6. Photoluminescence of Ga-doped ZnO film grown on c-Al2O3 (0001) by plasma-assisted molecular beam epitaxy

    NASA Astrophysics Data System (ADS)

    Park, H. C.; Byun, D.; Angadi, B.; Hee Park, D.; Choi, W. K.; Choi, J. W.; Jung, Y. S.

    2007-10-01

    High quality gallium doped ZnO (Ga:ZnO) thin films were grown on c-Al2O3(1000) by plasma-assisted molecular beam epitaxy, and Ga concentration NGa was controlled in the range of 1×1018-2.5×1020/cm3 by adjusting/changing the Ga cell temperature. From the low-temperature photoluminescence at 10K, the donor bound exciton I8 related to Ga impurity was clearly observed and confirmed by comparing the calculated activation energy of 16.8meV of the emission peak intensity with the known localization energy, 16.1meV. Observed asymmetric broadening with a long tail on the lower energy side in the photoluminescence (PL) emission line shape could be fitted by the Stark effect and the compensation ratio was approximately 14-17% at NGa⩾1×1020/cm3. The measured broadening of photoluminescence PL emission is in good agreement with the total thermal broadening and potential fluctuations caused by random distribution of impurity at NGa lower than the Mott critical density.

  7. Transparent conducting Al-doped ZnO thin films prepared by magnetron sputtering with dc and rf powers applied in combination

    SciTech Connect

    Minami, Tadatsugu; Ohtani, Yuusuke; Miyata, Toshihiro; Kuboi, Takeshi

    2007-07-15

    A newly developed Al-doped ZnO (AZO) thin-film magnetron-sputtering deposition technique that decreases resistivity, improves resistivity distribution, and produces high-rate depositions has been demonstrated by dc magnetron-sputtering depositions that incorporate rf power (dc+rf-MS), either with or without the introduction of H{sub 2} gas into the deposition chamber. The dc+rf-MS preparations were carried out in a pure Ar or an Ar+H{sub 2} (0%-2%) gas atmosphere at a pressure of 0.4 Pa by adding a rf component (13.56 MHz) to a constant dc power of 80 W. The deposition rate in a dc+rf-MS deposition incorporating a rf power of 150 W was approximately 62 nm/min, an increase from the approximately 35 nm/min observed in dc magnetron sputtering with a dc power of 80 W. A resistivity as low as 3x10{sup -4} {omega} cm and an improved resistivity distribution could be obtained in AZO thin films deposited on substrates at a low temperature of 150 deg. C by dc+rf-MS with the introduction of hydrogen gas with a content of 1.5%. This article describes the effects of adding a rf power component (i.e., dc+rf-MS deposition) as well as introducing H{sub 2} gas into dc magnetron-sputtering preparations of transparent conducting AZO thin films.

  8. In situ spectroscopic ellipsometry growth studies on the Al-doped ZnO films deposited by remote plasma-enhanced metalorganic chemical vapor deposition

    SciTech Connect

    Volintiru, I.; Creatore, M.; Sanden, M. C. M. van de

    2008-02-01

    In situ spectroscopic ellipsometry (SE) was applied to study the pyramidlike and pillarlike growth of Al doped ZnO (AZO) films deposited by means of remote plasma-enhanced metalorganic chemical vapor deposition for transparent conductive oxide applications. Real time SE studies in the visible region allowed discerning between the two growth modes by addressing the time evolution of the bulk and surface roughness layer thickness. While the pillarlike mode is characterized by a constant growth rate, a slower rate in the initial stage (up to 150-200 nm film thickness), compared to the bulk, is observed for the growth of pyramidlike AZO films. The two modes differ also in terms of surface roughness development: a saturation behavior is observed for film thickness above 150-200 nm in the case of the pyramidlike films, while a slow linear increase with film thickness characterizes the pillarlike mode. By extending the SE analysis of the AZO films to the near infrared region, valuable information about the in grain properties could be extracted: excellent in grain mobility values, i.e., larger than 100 and 50 cm{sup 2}/V s, are determined for the pyramidlike and pillarlike AZO layers, respectively. The comparison between the outcome of the in situ real time SE studies and the ex situ electrical and chemical characterization highlights the limitations in the electron transport occurring in both types of films and allows one to address routes toward further improvement in AZO conductivity.

  9. Origins of Highly Stable Al-evaporated Solution-processed ZnO Thin Film Transistors: Insights from Low Frequency and Random Telegraph Signal Noise

    NASA Astrophysics Data System (ADS)

    Kim, Joo Hyung; Kang, Tae Sung; Yang, Jung Yup; Hong, Jin Pyo

    2015-11-01

    One long-standing goal in the emerging field of flexible and transparent electronic devices is to meet the demand of key markets, such as enhanced output performance for metal oxide semiconductor thin film transistors (TFTs) prepared by a solution process. While solution-based fabrication techniques are cost-effective and ensure large-area coverage at low temperature, their utilization has the disadvantage of introducing large trap states into TFTs. Such states, the formation of which is induced by intrinsic defects initially produced during preparation, have a significant impact on electrical performance. Therefore, the ability to enhance the electrical characteristics of solution-processed TFTs, along with attaining a firm understanding of their physical nature, remains a key step towards extending their use. In this study, measurements of low-frequency noise and random telegraph signal noise are employed as generic alternative tools to examine the origins of enhanced output performance for solution-processed ZnO TFTs through the control of defect sites by Al evaporation.

  10. Band alignment at the interface between Ni-doped Cr2O3 and Al-doped ZnO: implications for transparent p-n junctions

    NASA Astrophysics Data System (ADS)

    Arca, Elisabetta; McInerney, Michael A.; Shvets, Igor V.

    2016-06-01

    The realization of transparent electronic and optoelectronic devices requires the use of transparent p-n junctions. In this context, understanding the band alignment at the interface between the p- and n-components represents a fundamental step towards the realization of high performance devices. In this work, the band alignment at the interface between Al-doped ZnO (AZO) and Ni-doped Cr2O3 has been analysed. The formation and evolution of the core levels as the interface progressively forms have been followed by means of x-ray Photoelectron Spectroscopy, x-ray diffraction and x-ray reflectivity. A type two (staggered) band alignment was identified, with the valence band offset and conduction band offset found to be 2.6 eV and 2.5 eV, respectively. The electrical behaviour will be discussed in terms of the position of the bands, the presence of band bending and the expected built-in potential and how these can be engineered in order to achieve the maximum performance for this hetero-structure.

  11. Correlations between 1/f noise and thermal treatment of Al-doped ZnO thin films deposited by direct current sputtering

    SciTech Connect

    Barhoumi, A. Guermazi, S.; Leroy, G.; Gest, J.; Carru, J. C.; Yang, L.; Boughzala, H.; Duponchel, B.

    2014-05-28

    Al-doped ZnO thin films (AZO) have been deposited on amorphous glass substrates by DC sputtering at different substrate temperatures T{sub s}. X-Ray diffraction results reveal that AZO thin films have a hexagonal wurtzite structure with (002) preferred orientation. (002) peaks indicate that the crystalline structure of the films is oriented with c-axis perpendicular to the substrate. Three-dimensional (3D) atomic force microscopy images of AZO thin films deposited on glass substrate at 200 °C, 300 °C, and 400 °C, respectively, shows the improvement of the crystallinity and the homogeneity of AZO thin films with T{sub s} which is in agreement with the noise measurements. The noise was characterized between 1 Hz and 100 kHz and we have obtained 1/f spectra. The noise is very sensitive to the crystal structure especially to the orientation of the crystallites which is perpendicular to the substrate and to the grain boundaries which generate a high current flow and a sharp increase in noise. Through time, R{sub sh} and [αμ]{sub eff} increase with the modification of the crystallinity of AZO thin films. Study of noise aging shows that the noise is more sensitive than resistivity for all AZO thin films.

  12. Sulfur and iron co-doped titanoniobate nanosheets: a novel efficient solid acid catalyst for alcoholysis of styrene epoxide at room temperature.

    PubMed

    Zhang, Lihong; Hu, Chenhui; Zhang, Junfeng; Cheng, Liyuan; Zhai, Zheng; Chen, Jing; Ding, Weiping; Hou, Wenhua

    2013-09-04

    Sulfur and iron co-doped titanoniobate nanosheets were prepared and evaluated in alcoholysis of styrene epoxide. The resultant co-doped catalyst exhibited excellent catalytic performance (yield of 99% with methanol as the nucleophile in only 1 h at room temperature) and may act as a promising candidate in many acid-catalyzed reactions.

  13. Structural and dielectric properties of Nd/Ca co-doped bi-ferrite multiferroics

    SciTech Connect

    Kumar, Ashwini E-mail: ashu.dhanda@gmail.com; Sharma, Poorva E-mail: ashu.dhanda@gmail.com; Varshney, Dinesh E-mail: ashu.dhanda@gmail.com

    2014-04-24

    Single-phase polycrystalline samples of Bi{sub 0.8}Nd{sub 0.2−x}Ca{sub x}FeO{sub 3} (x = 0.0, 0.1) were synthesized by chemical coprecipitation method. X-ray diffraction patterns accompanied by Rietveld-refined crystal structure parameters reveal the phase transition of Bi{sub 0.8}Nd{sub 0.1}Ca{sub 0.1}FeO{sub 3} with rhombohedral R3c symmetry to triclinic structure of Bi{sub 0.8}Nd{sub 0.2}FeO{sub 3} sample. Frequency dependence of dielectric constant (ε') and dielectric loss (tanδ), infers enhancement of both ε' (tanδ) in narrow band gap of Nd/Ca co-doped BFO as compare to wide band pristine BFO.

  14. Hydrothermal synthesis and characterization of fluorine & manganese co-doped PZT based cuboidal shaped powder

    NASA Astrophysics Data System (ADS)

    Nawaz, H.; Shuaib, M.; Saleem, M.; Rauf, A.; Aleem, A.

    2016-08-01

    Cuboidal shaped PZT powder particles based composition Pb0.89(Ba, Sr)0.11(Zr0.52Ti0.48)O3 co- doped with 1 mol% manganese and 2 mol% fluorine was prepared through hydrothermal route. 200-250nm size cuboidal particles were observed under FE-SEM. XRD technique revealed that the perovskite type ceramic structure has a dominant rhombohedral phase. The resultant powder particles were then spray dried, uniaxially pressed and sintered at different temperatures to achieve maximum theoretical density. 98% density was obtained in the pellets at a sintering temperature of 1190°C with an average grain size of 1-3um. The electrical properties of sintered samples were also measured before and after poling to evaluate the effect of dopants on piezoelectric properties.

  15. Aqueous synthesis and characterization of Ni, Zn co-doped CdSe QDs

    NASA Astrophysics Data System (ADS)

    Thirugnanam, N.; Govindarajan, D.

    2016-01-01

    Ni, Zn co-doped CdSe quantum dots (QDs) were synthesized by chemical precipitation method through aqueous route. The prepared QDs were characterized by X-ray diffraction (XRD) technique, UV-Vis absorption spectroscopy, photoluminescence (PL) spectroscopy and high resolution transmission electron microscopy (HRTEM). XRD technique results indicate that the prepared samples have a zinc blende cubic phase. From UV-Vis absorption spectroscopy technique, the prepared samples were blue shifted with respect to their bulk counter part due to quantum confinement effect. Among different doping ratios examined, a maximum PL emission intensity was observed for CdSe:Ni(1 %):Zn(1 %) QDs. HRTEM pictures show that the prepared QDs were in spherical shape.

  16. Deposition of Co-doped TiO2 Thin Films by sol-gel method

    NASA Astrophysics Data System (ADS)

    Boutlala, A.; Bourfaa, F.; Mahtili, M.; Bouaballou, A.

    2016-03-01

    Cobalt doped TiO2 thin films have been prepared by sol-gel method onto glass substrate at room temperature. in this present work, we are interesting to study the effect of Cobalt doped TiO2 thin films.the concentration of Co was varied from 0 to 6%at .The obtained films have been annealed at 500°C for 2 hours. X-ray diffraction patterns showed that Co: TiO2 films are polycrystalline with a tetragonal anatase and orthorhombic brookite types structures. The surface morphologies of the TiO2 doped with cobalt thin films were evaluated by Atomic Force Microscopy (AFM). The optical properties were studied by mean of UV-visible and near infrared spectroscopy.The calculated optical band gap decreases from 3.30 to 2.96 eV with increasing Co doping.

  17. Electronic and magnetic properties of Co doped MoS2 monolayer

    PubMed Central

    Wang, Yiren; Li, Sean; Yi, Jiabao

    2016-01-01

    First principle calculations are employed to calculate the electronic and magnetic properties of Co doped MoS2 by considering a variety of defects including all the possible defect complexes. The results indicate that pristine MoS2 is nonmagnetic. The materials with the existence of S vacancy or Mo vacancy alone are non-magnetic either. Further calculation demonstrates that Co substitution at Mo site leads to spin polarized state. Two substitutional CoMo defects tend to cluster and result in the non-magnetic behaviour. However, the existence of Mo vacancies leads to uniform distribution of Co dopants and it is energy favourable with ferromagnetic coupling, resulting in an intrinsic diluted magnetic semiconductor. PMID:27052641

  18. Mode-Locked Thulium Ytterbium Co-Doped Fiber Laser with Graphene Oxide Paper Saturable Absorber

    NASA Astrophysics Data System (ADS)

    M. Azooz, S.; W. Harun, S.; H., Ahmad; Halder, A.; C. Paul, M.; Pal, M.; K. Bhadra, S.

    2015-01-01

    A mode-locked thulium ytterbium co-doped fiber laser (TYDFL) is proposed and demonstrated by using a commercial graphene oxide (GO) paper as saturable absorber (SA). The GO paper is sandwiched between two fiber ferrules and incorporates a ring laser cavity to generate soliton pulse train operating at 1942.0nm at a threshold multimode pump power as low as 1.8 W. The mode-locked TYDFL has a repetition rate of 22.32 MHz and the calculated pulse width of 1.1 ns. Even though the SA has a low damage threshold, the easy fabrication of GO paper should promote its potential application in ultrafast photonics.

  19. Ultrahigh volumetric capacitance and cyclic stability of fluorine and nitrogen co-doped carbon microspheres.

    PubMed

    Zhou, Junshuang; Lian, Jie; Hou, Li; Zhang, Junchuan; Gou, Huiyang; Xia, Meirong; Zhao, Yufeng; Strobel, Timothy A; Tao, Lu; Gao, Faming

    2015-09-29

    Highly porous nanostructures with large surface areas are typically employed for electrical double-layer capacitors to improve gravimetric energy storage capacity; however, high surface area carbon-based electrodes result in poor volumetric capacitance because of the low packing density of porous materials. Here, we demonstrate ultrahigh volumetric capacitance of 521 F cm(-3) in aqueous electrolytes for non-porous carbon microsphere electrodes co-doped with fluorine and nitrogen synthesized by low-temperature solvothermal route, rivaling expensive RuO2 or MnO2 pseudo-capacitors. The new electrodes also exhibit excellent cyclic stability without capacitance loss after 10,000 cycles in both acidic and basic electrolytes at a high charge current of 5 A g(-1). This work provides a new approach for designing high-performance electrodes with exceptional volumetric capacitance with high mass loadings and charge rates for long-lived electrochemical energy storage systems.

  20. Ultrahigh volumetric capacitance and cyclic stability of fluorine and nitrogen co-doped carbon microspheres

    NASA Astrophysics Data System (ADS)

    Zhou, Junshuang; Lian, Jie; Hou, Li; Zhang, Junchuan; Gou, Huiyang; Xia, Meirong; Zhao, Yufeng; Strobel, Timothy A.; Tao, Lu; Gao, Faming

    2015-09-01

    Highly porous nanostructures with large surface areas are typically employed for electrical double-layer capacitors to improve gravimetric energy storage capacity; however, high surface area carbon-based electrodes result in poor volumetric capacitance because of the low packing density of porous materials. Here, we demonstrate ultrahigh volumetric capacitance of 521 F cm-3 in aqueous electrolytes for non-porous carbon microsphere electrodes co-doped with fluorine and nitrogen synthesized by low-temperature solvothermal route, rivaling expensive RuO2 or MnO2 pseudo-capacitors. The new electrodes also exhibit excellent cyclic stability without capacitance loss after 10,000 cycles in both acidic and basic electrolytes at a high charge current of 5 A g-1. This work provides a new approach for designing high-performance electrodes with exceptional volumetric capacitance with high mass loadings and charge rates for long-lived electrochemical energy storage systems.

  1. Co-doped sodium chloride crystals exposed to different irradiation temperature

    SciTech Connect

    Ortiz-Morales, A.; Cruz-Zaragoza, E.; Furetta, C.; Kitis, G.; Flores J, C.; Hernandez A, J.; Murrieta S, H.

    2013-07-03

    Monocrystals of NaCl:XCl{sub 2}:MnCl{sub 2}(X = Ca,Cd) at four different concentrations have been analyzed. The crystals were exposed to different irradiation temperature, such as at room temperature (RT), solid water (SW), dry ice (DI) and liquid nitrogen (LN). The samples were irradiated with photon from {sup 60}Co irradiators. The co-doped sodium chloride crystals show a complex structure of glow curves that can be related to different distribution of traps. The linearity response was analyzed with the F(D) index. The F(D) value was less than unity indicating a sub-linear response was obtained from the TL response on the function of the dose. The glow curves were deconvoluted by using the CGCD program based on the first, second and general order kinetics.

  2. Characterization of CdZnTe co-doped with indium and lead

    NASA Astrophysics Data System (ADS)

    Zaman, Yasir; Jie, Wanqi; Wang, Tao; He, Yihui; Xu, Lingyan; Guo, Rongrong; Xu, Yadong; Zha, Gangqiang

    2015-01-01

    Indium and lead co-doped Cd0.9Zn0.1Te (CZT:(In,Pb)) were characterized by using I-V measurement, thermally stimulated current (TSC) spectroscopy and time-of-flight (TOF). The concentration of doping level of In and Pb was 10 ppm and 2 ppm, respectively. I-V curves showed that CZT:(In,Pb) possessed the resistivity as high as 1.8×1010 Ω cm, and the mobility (μ) of about 868 cm2/V s, which is considered acceptable for detector's fabrication. However, the carrier life time (τ) was only 9.44×10-7 s. Therefore, the μτ (mobility life time product) value was low. TSC results showed thirteen different trap levels, which were much more than that in Indium doped CZT crystal. Several special traps associated with lead were found, which might be the reason for the low carrier life time.

  3. Ultrahigh volumetric capacitance and cyclic stability of fluorine and nitrogen co-doped carbon microspheres

    PubMed Central

    Zhou, Junshuang; Lian, Jie; Hou, Li; Zhang, Junchuan; Gou, Huiyang; Xia, Meirong; Zhao, Yufeng; Strobel, Timothy A.; Tao, Lu; Gao, Faming

    2015-01-01

    Highly porous nanostructures with large surface areas are typically employed for electrical double-layer capacitors to improve gravimetric energy storage capacity; however, high surface area carbon-based electrodes result in poor volumetric capacitance because of the low packing density of porous materials. Here, we demonstrate ultrahigh volumetric capacitance of 521 F cm−3 in aqueous electrolytes for non-porous carbon microsphere electrodes co-doped with fluorine and nitrogen synthesized by low-temperature solvothermal route, rivaling expensive RuO2 or MnO2 pseudo-capacitors. The new electrodes also exhibit excellent cyclic stability without capacitance loss after 10,000 cycles in both acidic and basic electrolytes at a high charge current of 5 A g−1. This work provides a new approach for designing high-performance electrodes with exceptional volumetric capacitance with high mass loadings and charge rates for long-lived electrochemical energy storage systems. PMID:26415838

  4. Nitrogen/phosphorus co-doped nonporous carbon nanofibers for high-performance supercapacitors

    NASA Astrophysics Data System (ADS)

    Yan, Xiaodong; Liu, Yuan; Fan, Xiaorong; Jia, Xiaolong; Yu, Yunhua; Yang, Xiaoping

    2014-02-01

    This study demonstrates a facile and effective approach to prepare nitrogen/phosphorus co-doped nonporous carbon nanofibers (N/P-NPCNFs) through the electrospinning of the polyacrylonitrile and phosphoric acid precursor solutions and subsequent thermal treatment. X-ray photoelectron spectroscopy analyses show that the contents of phosphorus and pyrrol-like nitrogen in N/P-NPCNFs can be tuned by controlling the amount of phosphoric acid. The maximum specific capacitance of 224.9 F g-1 is achieved at 0.5 A g-1 in 1 M H2SO4. Furthermore, the specific capacitance could still remain 155.5 F g-1 at 30 A g-1 with a high capacitance retention ratio of 70%. It is worth noting that no capacitance loss is observed over 8000 charge/discharge cycles, clearly demonstrating a robust long-term stability. The excellent electrochemical performance can be attributed to the synergetic effect of nitrogen and phosphorus functionalities.

  5. Sulfur and nitrogen co-doped carbon dots sensors for nitric oxide fluorescence quantification.

    PubMed

    Simões, Eliana F C; Leitão, João M M; Esteves da Silva, Joaquim C G

    2017-04-01

    Microwave synthetized sulfur and nitrogen co-doped carbon dots responded selectively to nitric oxide (NO) at pH 7. Citric acid, urea and sodium thiosulfate in the proportion of 1:1:3 were used respectively as carbon, nitrogen and sulfur sources in the carbon dots microwave synthesis. For this synthesis, the three compounds were diluted in 15 mL of water and exposed for 5 min to a microwave radiation of 700 W. It is observed that the main factor contributing to the increased sensitivity and selectivity response to NO at pH 7 is the sodium thiosulfate used as sulfur source. A linear response range from 1 to 25 μM with a sensitivity of 16 μM(-1) and a detection limit of 0.3 μM were obtained. The NO quantification capability was assessed in standard and in fortified serum solutions.

  6. Encapsulation of Fe3O4 Nanoparticles into N, S co-Doped Graphene Sheets with Greatly Enhanced Electrochemical Performance

    PubMed Central

    Yang, Zunxian; Qian, Kun; Lv, Jun; Yan, Wenhuan; Liu, Jiahui; Ai, Jingwei; Zhang, Yuxiang; Guo, Tailiang; Zhou, Xiongtu; Xu, Sheng; Guo, Zaiping

    2016-01-01

    Particular N, S co-doped graphene/Fe3O4 hybrids have been successfully synthesized by the combination of a simple hydrothermal process and a subsequent carbonization heat treatment. The nanostructures exhibit a unique composite architecture, with uniformly dispersed Fe3O4 nanoparticles and N, S co-doped graphene encapsulant. The particular porous characteristics with many meso/micro holes/pores, the highly conductive N, S co-doped graphene, as well as the encapsulating N, S co-doped graphene with the high-level nitrogen and sulfur doping, lead to excellent electrochemical performance of the electrode. The N-S-G/Fe3O4 composite electrode exhibits a high initial reversible capacity of 1362.2 mAhg−1, a high reversible specific capacity of 1055.20 mAhg−1 after 100 cycles, and excellent cycling stability and rate capability, with specific capacity of 556.69 mAhg−1 when cycled at the current density of 1000 mAg−1, indicating that the N-S-G/Fe3O4 composite is a promising anode candidate for Li-ion batteries. PMID:27296103

  7. Influence of Dopant Loading on the Photo- and Electrochemical Properties of (N, O)-Co-doped Graphene.

    PubMed

    Baldoví, Hermenegildo G; Albarracín, Ferran; Álvaro, Mercedes; Ferrer, Belén; García, Hermenegildo

    2015-07-20

    A series of (N, O)-co-doped graphenes with different N and O loadings are prepared by the pyrolysis of natural chitosan. When the percentage of dopant increases, the conduction-band potential and charge-separation quantum yield increase, whereas the charge-separation lifetime decreases.

  8. Structure Evolution of BaTiO3 on Co Doping: X-ray diffraction and Raman study

    NASA Astrophysics Data System (ADS)

    Mansuri, Amantulla; Mishra, Ashutosh

    2016-10-01

    In the present study, we have synthesize polycrystalline samples of BaTi1-xCoxO3 (x = 0, 0.05 and 0.1) with standard solid state reaction technique. The obtained samples are characterized by X-ray diffraction (XRD) and Raman spectroscopy. The detail structural analysis has been performed by Rietveld refinement using Fullprof program. The structural analysis reveal the samples are chemical pure and crystallize in tetragonal phase with space group Pm3m. We observe an increase in lattice parameters which results due to substitution of Co2+ with large ionic radii (0.9) for smaller ionic radii (0.6) Ti4+. Moreover peak at 45.5° shift to 45° on Co doping, which is due to structure phase transition from tetragonal to cubic. Raman study infers that the intensity of characteristic peaks decreases and linewidth increases with Co doping. The bands linked with the tetragonal structure (307 cm1) decreased due to the tetragonal-towards-cubic phase transition with Co doping. Our structural study reveals the expansion of BTO unit cell and tetragonal-to-cubic phase transformation takes place, results from different characterization techniques are conclusive and show structural evolution with Co doping.

  9. Encapsulation of Fe3O4 Nanoparticles into N, S co-Doped Graphene Sheets with Greatly Enhanced Electrochemical Performance

    NASA Astrophysics Data System (ADS)

    Yang, Zunxian; Qian, Kun; Lv, Jun; Yan, Wenhuan; Liu, Jiahui; Ai, Jingwei; Zhang, Yuxiang; Guo, Tailiang; Zhou, Xiongtu; Xu, Sheng; Guo, Zaiping

    2016-06-01

    Particular N, S co-doped graphene/Fe3O4 hybrids have been successfully synthesized by the combination of a simple hydrothermal process and a subsequent carbonization heat treatment. The nanostructures exhibit a unique composite architecture, with uniformly dispersed Fe3O4 nanoparticles and N, S co-doped graphene encapsulant. The particular porous characteristics with many meso/micro holes/pores, the highly conductive N, S co-doped graphene, as well as the encapsulating N, S co-doped graphene with the high-level nitrogen and sulfur doping, lead to excellent electrochemical performance of the electrode. The N-S-G/Fe3O4 composite electrode exhibits a high initial reversible capacity of 1362.2 mAhg‑1, a high reversible specific capacity of 1055.20 mAhg‑1 after 100 cycles, and excellent cycling stability and rate capability, with specific capacity of 556.69 mAhg‑1 when cycled at the current density of 1000 mAg‑1, indicating that the N-S-G/Fe3O4 composite is a promising anode candidate for Li-ion batteries.

  10. Encapsulation of Fe3O4 Nanoparticles into N, S co-Doped Graphene Sheets with Greatly Enhanced Electrochemical Performance.

    PubMed

    Yang, Zunxian; Qian, Kun; Lv, Jun; Yan, Wenhuan; Liu, Jiahui; Ai, Jingwei; Zhang, Yuxiang; Guo, Tailiang; Zhou, Xiongtu; Xu, Sheng; Guo, Zaiping

    2016-06-14

    Particular N, S co-doped graphene/Fe3O4 hybrids have been successfully synthesized by the combination of a simple hydrothermal process and a subsequent carbonization heat treatment. The nanostructures exhibit a unique composite architecture, with uniformly dispersed Fe3O4 nanoparticles and N, S co-doped graphene encapsulant. The particular porous characteristics with many meso/micro holes/pores, the highly conductive N, S co-doped graphene, as well as the encapsulating N, S co-doped graphene with the high-level nitrogen and sulfur doping, lead to excellent electrochemical performance of the electrode. The N-S-G/Fe3O4 composite electrode exhibits a high initial reversible capacity of 1362.2 mAhg(-1), a high reversible specific capacity of 1055.20 mAhg(-1) after 100 cycles, and excellent cycling stability and rate capability, with specific capacity of 556.69 mAhg(-1) when cycled at the current density of 1000 mAg(-1), indicating that the N-S-G/Fe3O4 composite is a promising anode candidate for Li-ion batteries.

  11. The effect of LaBr3:Ce single crystal aliovalent co-doping on its mechanical strength

    NASA Astrophysics Data System (ADS)

    Benedetto, A.; Valladeau, S.; Richaud, D.; Ouspenski, V.; Gy, R.

    2015-06-01

    Lanthanum bromide cerium doped single crystals are a transparent scintillator material that offers outstanding scintillation properties with high light yield, excellent energy resolution, fast emission and excellent proportionality. Although properly packaged detectors are robust enough to withstand operating conditions during geophysical oil logging operations, the material itself is brittle and exhibits low fracture toughness. We attempted to modify the composition of the crystals through aliovalent co-doping by Ba, Ca, Hf, Sr, Zn and Zr. These elements have been added in concentrations from 100 ppm to 5000 ppm to the growth bath. Ratio of co-doping in the crystalline matrices ranged from no incorporation (for Hf, Zn, and Zr) up to 200 ppm for Sr and 10-20 ppm for Ca. The effect of the aliovalent co-doping on the mechanical properties of the crystals and in particular on their mechanical strength, hardness and toughness has been measured. As the crystals are extremely hygroscopic this demanded designing customized experiments in anhydrous environment in order to obtain reliable and accurate results. The ultimate strength has been measured by four points bending. Hardness has been measured by indentation and by the same technique we attempted to have some information on the fracture toughness. No improvement of the mechanical properties of the co-doped crystals with respect to the reference standard lanthanum bromide cerium doped could be found.

  12. Er{sup 3+}/Yb{sup 3+}co-doped bismuth molybdate nanosheets upconversion photocatalyst with enhanced photocatalytic activity

    SciTech Connect

    Adhikari, Rajesh; Gyawali, Gobinda; Cho, Sung Hun; Narro-García, R.; Sekino, Tohru; Lee, Soo Wohn

    2014-01-15

    In this paper, we report the microwave hydrothermal synthesis of Er{sup 3+}/Yb{sup 3+} co-doped Bi{sub 2}MoO{sub 6} upconversion photocatalyst. Crystal structure, morphology, elemental composition, optical properties and BET surface area were analyzed in detail. Infrared to visible upconversion luminescence at 532 nm and 546 nm of the co-doped samples was investigated under excitation at 980 nm. The results revealed that the co-doping of Er{sup 3+}/Yb{sup 3+} into Bi{sub 2}MoO{sub 6} exhibited enhanced photocatalytic activity for the decomposition of rhodamine B under simulated solar light irradiation. Enhanced photocatalytic activity can be attributed to the energy transfer between Er{sup 3+}/Yb{sup 3+} and Bi{sub 2}MoO{sub 6} via infrared to visible upconversion from Er{sup 3+}/Yb{sup 3+} ion and higher surface area of the Bi{sub 2}MoO{sub 6} nanosheets. Therefore, this synthetic approach may exhibit a better alternative to fabricate upconversion photocatalyst for integral solar light absorption. - Graphical abstract: Schematic illustration of the upconversion photocatalysis. Display Omitted - Highlights: • Er{sup 3+}/Yb{sup 3+} co-doped Bi{sub 2}MoO{sub 6} upconversion photocatalyst is successfully synthesized. • We obtained the nanosheets having high surface area. • Upconversion of IR to visible light was confirmed. • Upconversion phenomena can be utilized for effective photocatalysis.

  13. Investigations on luminescence behavior of Er3+/Yb3+ co-doped boro-tellurite glasses

    NASA Astrophysics Data System (ADS)

    Maheshvaran, K.; Arunkumar, S.; Venkata Krishnaiah, K.; Marimuthu, K.

    2015-01-01

    Er3+/Yb3+ co-doped boro-tellurite glasses with the chemical composition 30TeO2+(24 - x)B2O3 + 15SrO + 10BaO + 10Li2O + 10LiF + 1Er2O3 + xYb2O3 (where x = 0, 0.1, 0.5, 1 and 2 in wt%) have been prepared and their luminescence behavior were studied and reported. Absorption spectral measurements have been used to derive the Judd-Ofelt (JO) intensity parameters from the experimental and calculated oscillator strength values following the JO theory. The various lasing parameters such as stimulated emission cross-section (σEp), experimental and calculated branching ratios (βR) and radiative lifetime (τcal) for the 2H9/2 → 4I15/2, 4S3/2 → 4I15/2 and 4I13/2 → 4I15/2 emission transitions were determined using the JO intensity parameters. The absorption and emission cross-section values for the 4I13/2 → 4I15/2 emission band have been calculated using McCumbar theory and the Gain cross-section for the 4I13/2 → 4I15/2 emission transition also obtained. The upconversion emission mechanism have been studied through various energy transfer processes and the intensity of the upconversion emission transitions are found to increase with the increase in Yb3+ ion concentration. The luminescence decay curves corresponding to the 4I13/2 → 4I15/2 transition of the Er3+/Yb3+ co-doped boro-tellurite glasses under 980 nm excitation wavelength have also been studied and reported in the present work.

  14. Multimodal emissions from Tb3+/Yb3+ co-doped lithium borate glass: Upconversion, downshifting and quantum cutting

    NASA Astrophysics Data System (ADS)

    Bahadur, A.; Yadav, R. S.; Yadav, R. V.; Rai, S. B.

    2017-02-01

    This paper reports the optical properties of Tb3+/Yb3+ co-doped lithium borate (LB) glass prepared by melt quench method. The absorption spectrum of the Yb3+ doped LB glass contains intense NIR band centered at 976 nm due to 2F7/2→2F5/2 transition. The emission spectra of the prepared glasses have been monitored on excitation with 266, 355 and 976 nm. The Yb3+ doped glass emits a broad NIR band centered at 976 nm whereas the Tb3+ doped glass gives off visible bands on excitations with 266 and 355 nm. When the Tb3+ and Yb3+ ions are co-doped together, the emission intensity in the visible region decreases whereas it increases in the NIR region significantly. The increase in the emission intensity in the NIR region is due to efficient cooperative energy transfer (CET) from Tb3+ to Yb3+ ions. The quantum cutting efficiency for Tb3+/Yb3+ co-doped glass has been calculated and compared for 266 and 355 nm excitations. The quantum cutting efficiency is larger for 355 nm excitation (137%). The Tb3+/Yb3+ co-doped LB glass also emits upconverted visible bands on excitation with 976 nm. The mechanisms involved in the energy transfer have been discussed using schematic energy level diagram. The Tb3+/Yb3+ co-doped LB glass may be used in the optical devices and in solar cell for solar spectral conversion and behaves as a multi-modal photo-luminescent material.

  15. Optical and structural properties of Al-doped ZnO thin films by sol gel process.

    PubMed

    Jun, Min-Chul; Koh, Jung-Hyuk

    2013-05-01

    Transparent conducting oxide (TCO) materials with high transmittance and good electrical conductivity have been attracted much attention due to the development of electronic display and devices such as organic light emitting diodes (OLEDs), and dye-sensitized solar cells (DSSCs). Aluminum doped zinc oxide thin films (AZO) have been well known for their use as TCO materials due to its stability, cost-effectiveness, good optical transmittance and electrical properties. Especially, AZO thin film, which have low resistivity of 2-4 x 10(-4) omega x cm which is similar to that of ITO films with wide band gap semiconductors. The AZO thin films were deposited on glass substrates by sol-gel spin-coating process. As a starting material, zinc acetate dihydrate (Zn(CH3COO)2 x 2H2O) and aluminum chloride hexahydrate (AlCl3 6H2O) were used. 2-methoxyethanol and monoethanolamine (MEA) were used as solvent and stabilizer, respectively. After deposited, the films were preheated at 300 degrees C on a hotplate and post-heated at 650 degrees C for 1.5 hrs in the furnace. We have studied the structural and optical properties as a function of Al concentration (0-2.5 mol.%).

  16. Effects of NIR annealing on the characteristics of al-doped ZnO thin films prepared by RF sputtering.

    PubMed

    Jun, Min-Chul; Koh, Jung-Hyuk

    2012-06-06

    Aluminum-doped zinc oxide (AZO) thin films have been deposited on glass substrates by employing radio frequency (RF) sputtering method for transparent conducting oxide applications. For the RF sputtering process, a ZnO:Al2O3 (2 wt.%) target was employed. In this paper, the effects of near infrared ray (NIR) annealing technique on the structural, optical, and electrical properties of the AZO thin films have been researched. Experimental results showed that NIR annealing affected the microstructure, electrical resistance, and optical transmittance of the AZO thin films. X-ray diffraction analysis revealed that all films have a hexagonal wurtzite crystal structure with the preferentially c-axis oriented normal to the substrate surface. Optical transmittance spectra of the AZO thin films exhibited transmittance higher than about 80% within the visible wavelength region, and the optical direct bandgap (Eg) of the AZO films was increased with increasing the NIR energy efficiency.

  17. Electrical stability of Al-doped ZnO transparent electrode prepared by sol-gel method

    NASA Astrophysics Data System (ADS)

    Tabassum, Samia; Yamasue, Eiji; Okumura, Hideyuki; Ishihara, Keiichi N.

    2016-07-01

    Al-doped zinc oxide (AZO) thin films have been considered as a promising alternative to tin doped indium oxide (ITO), which is currently used in various optoelectronic applications. However, the environmental stability of AZO film is not satisfactory, in that the resistivity is significantly increases in air. Here, we investigate the resistivity stability of AZO thin films prepared by sol-gel method using various annealing temperatures and durations. The degradation of resistivity property was observed for AZO films stored in ambient or damp heat environment, where the degradation rate was influenced by annealing temperature. A significant improvement of electrical stability was attained in AZO films that were prepared at high annealing temperature. The films, which showed the highest and the lowest increasing rate of resistivity, were further characterized in detail to shed light on the possible mechanisms explaining the improved stability through crystallinity, surface morphology and elemental state of the thin film.

  18. Stable and high-quality Al-doped ZnO films with ICP-assisted facing targets sputtering at low temperature

    NASA Astrophysics Data System (ADS)

    Choi, Yoon S.; Kim, Hye R.; Han, Jeon G.

    2014-04-01

    FTS (facing targets sputtering) has been studied intensively for high-quality TCO films in low-temperature processes. In this study, we designed ICP-assisted FTS process for high-quality Al-doped ZnO film synthesis in a low temperature process. A one-turn ICP coil was installed a few cm above the upper target edge through which hydrogen was introduced and fully dissociated to the atomic radicals. The increase of ICP power caused heating and rarefaction of Ar gas and generated abundant hydrogen atoms and hydrogenated molecules. In FESEM analysis, the films synthesized with high ICP power showed high crystallinity. XPS was used to analyze the film structure. In O1s spectra, the low binding energy component located at ˜530.3 ± 0.4 eV corresponding to O2- ions on the wurtzite structure of the hexagonal Zn2+ ion array increased with the ICP power, indicating good crystal quality. With increasing ICP power fixing while fixing the RF power at the cathode, the resistivity was observed to decrease to 5 × 10-4 Ω-cm. For thermal reliability tests, films were stored in an air-based chamber at 200 °C. The films synthesized without ICP showed rapid degradation in the electrical properties, while the films synthesized with high ICP power showed good stabilities with little change in the electrical properties after 30 h of storage in an oven. By adding hydrogen, the carrier concentration of the films increased, while the mobility did not change much. From these results, it is expected that hydrogen was incorporated into the film as a stable n-dopant by using an auxiliary ICP plasma source.

  19. The layered double hydroxide route to Bi-Zn co-doped TiO₂ with high photocatalytic activity under visible light.

    PubMed

    Benalioua, Bahia; Mansour, Meriem; Bentouami, Abdelhadi; Boury, Bruno; Elandaloussi, El Hadj

    2015-05-15

    In this work, a co-doped Bi-Zn-TiO₂ photocatalist is synthesized by an original synthesis route of layered double hydroxide followed by heat treatment at 670 °C. After characterization the photocatalyst efficiency is estimated by the photo-discoloration of an anionic dye (indigo carmine) under visible light and compare to TiO₂-P25 as reference material. In this new photocatalyst, anatase and ZnO wurtzite are the only identified crystalline phase, rutile and Bi₂O₃ being undetected. Moreover, the binding energy of Bi determined (XPS analysis) is different from the one of Bi in Bi₂O₃. Compared to TiO₂-P25, the absorption is red shifted (UV-vis DRS) and the Bi-Zn-TiO₂ photocatalyst showed sorption capacity toward indigo carmine higher than that TiO₂-P25. The kinetics of the photo-discoloration is faster with Bi-Zn-TiO₂ than with TiO₂-P25. Indeed, a complete discoloration is obtained after 70 min and 120 min in the presence of Bi-Zn-TiO₂ and TiO₂-P25 respectively. The identification of the responsible species on photo-discoloration was carried out in the presence of different scavengers. The study showed that the first responsible is h(+) specie with a moderate contribution of superoxide anion radical and a minor contribution of the hydroxyl radical. The material showed high stability after five uses with the same rate of photo-discoloration.

  20. Tuning the near-gap electronic structure of Cu2O by anion-cation co-doping for enhanced solar energy conversion

    NASA Astrophysics Data System (ADS)

    Si, Yuan; Yang, Hao-Ming; Wu, Hong-Yu; Huang, Wei-Qing; Yang, Ke; Peng, Ping; Huang, Gui-Fang

    2017-01-01

    Doping is an effective strategy to tune the electronic properties of semiconductors, but some side effects caused by mono-doping degrade the specific performance of matrixes. As a model system to minimize photoproduced electron-hole pairs recombination by anion-cation co-doping, we investigate the electronic structures and optical properties of (Fe+N) co-doped Cu2O using the first-principles calculations. Compared to the case of mono-doping, the FeCuNO (a Fe (N) atom substituting a Cu (O) atom) co-doping reduces the energy cost of doping as a consequence of the charge compensation between the iron and nitrogen impurities, which eliminates the isolated levels (induced by mono-dopant) in the band gap. Interestingly, it is found that the contributions of different host atoms (Cu and O) away from anion (N) and cation (Fe) dopants to the variation of near band gap electronic structure of the co-doped Cu2O are different. Moreover, co-doping reduces the band gap and increases the visible-light absorption of Cu2O. Both band gap reduction and low recombination rate are critical elements for efficient light-to-current conversion in co-doped semiconductor photocatalysts. These findings raise the prospect of using co-doped Cu2O with specifically engineered electronic properties in a variety of solar applications.

  1. In situ analyses on negative ions in the sputtering process to deposit Al-doped ZnO films

    SciTech Connect

    Tsukamoto, Naoki; Watanabe, Daisuke; Saito, Motoaki; Sato, Yasushi; Oka, Nobuto; Shigesato, Yuzo

    2010-07-15

    The origin of high energy negative ions during deposition of aluminum doped zinc oxide (AZO) films by dc magnetron sputtering of an AZO (Al{sub 2}O{sub 3}: 2.0 wt %) target was investigated by in situ analyses using the quadrupole mass spectrometer combined with the electrostatic energy analyzer. High energy negative oxygen (O{sup -}) ions which possessed the kinetic energy corresponding to the cathode sheath voltage were detected. The maximum flux of the O{sup -} ions was clearly observed at the location opposite to the erosion track area on the target. The flux of the O{sup -} ions changed hardly with increasing O{sub 2} flow ratio [O{sub 2}/(Ar+O{sub 2})] from 0% to 5%. The kinetic energy of the O{sup -} ions decreased with decreasing cathode sheath voltage from 403 to 337 V due to the enhancement of the vertical maximum magnetic field strength at the cathode surface from 0.025 to 0.100 T. The AZO films deposited with the lower O{sup -} bombardment energy showed the higher crystallinity and improved the electrical conductivity.

  2. Self-organized vanadium and nitrogen co-doped titania nanotube arrays with enhanced photocatalytic reduction of CO2 into CH4

    PubMed Central

    2014-01-01

    Self-organized V-N co-doped TiO2 nanotube arrays (TNAs) with various doping amount were synthesized by anodizing in association with hydrothermal treatment. Impacts of V-N co-doping on the morphologies, phase structures, and photoelectrochemical properties of the TNAs films were thoroughly investigated. The co-doped TiO2 photocatalysts show remarkably enhanced photocatalytic activity for the CO2 photoreduction to methane under ultraviolet illumination. The mechanism of the enhanced photocatalytic activity is discussed in detail. PMID:24948893

  3. Energetics of CO oxidation on lanthanide-free perovskite systems: the case of Co-doped SrTiO3.

    PubMed

    Carlotto, Silvia; Natile, Marta Maria; Glisenti, Antonella; Paul, Jean-François; Blanck, Dimitri; Vittadini, Andrea

    2016-12-07

    The energetics of the catalytic oxidation of CO on a complex metal oxide are investigated for the first time via density functional theory calculations. The catalyst, Co-doped SrTiO3, is modelled using periodically repeated slabs based on the SrTiO3(100) surface. The comparison of the energy profiles obtained for the pure host and the Co-doped material reveals the actual pathway followed by the reaction, and shows that Co doping enhances the catalytic properties of SrTiO3 by reducing the energy cost for the formation of oxygen vacancies.

  4. Anisotropic temperature-dependent thermal conductivity by an Al2O3 interlayer in Al2O3/ZnO superlattice films

    NASA Astrophysics Data System (ADS)

    Lee, Won-Yong; Lee, Jung-Hoon; Ahn, Jae-Young; Park, Tae-Hyun; Park, No-Won; Kim, Gil-Sung; Park, Jin-Seong; Lee, Sang-Kwon

    2017-03-01

    The thermal conductivity of superlattice films is generally anisotropic and should be studied separately in the in-plane and cross-plane directions of the films. However, previous works have mostly focused on the cross-plane thermal conductivity because the electrons and phonons in the cross-plane direction of superlattice films may result in much stronger interface scattering than that in the in-plane direction. Nevertheless, it is highly desirable to perform systematic studies on the effect of interface formation in semiconducting superlattice films on both in-plane and cross-plane thermal conductivities. In this study, we determine both the in-plane and cross-plane thermal conductivities of Al2O3 (AO)/ZnO superlattice films grown by atomic layer deposition (ALD) on SiO2/Si substrates in the temperature range of 50–300 K by the four-point-probe 3-ω method. Our experimental results indicate that the formation of an atomic AO layer (0.82 nm) significantly contributes to the decrease of the cross-plane thermal conductivity of the AO/ZnO superlattice films compared with that of AO/ZnO thin films. The cross-plane thermal conductivity (0.26–0.63 W m‑1 K‑1 of the AO/ZnO superlattice films (with an AO layer of ∼0.82 nm thickness) is approximately ∼150%–370% less than the in-plane thermal conductivity (0.96–1.19 W m‑1 K‑1) of the corresponding film, implying significant anisotropy. This indicates that the suppression of the cross-plane thermal conductivity is mainly attributed to the superlattice, rather than the nanograin columnar structure in the films. In addition, we theoretically analyzed strong anisotropic behavior of the in-plane and cross-plane thermal conductivities of the AO/ZnO superlattice films in terms of temperature dependence.

  5. Anisotropic temperature-dependent thermal conductivity by an Al2O3 interlayer in Al2O3/ZnO superlattice films.

    PubMed

    Lee, Won-Yong; Lee, Jung-Hoon; Ahn, Jae-Young; Park, Tae-Hyun; Park, No-Won; Kim, Gil-Sung; Park, Jin-Seong; Lee, Sang-Kwon

    2017-03-10

    The thermal conductivity of superlattice films is generally anisotropic and should be studied separately in the in-plane and cross-plane directions of the films. However, previous works have mostly focused on the cross-plane thermal conductivity because the electrons and phonons in the cross-plane direction of superlattice films may result in much stronger interface scattering than that in the in-plane direction. Nevertheless, it is highly desirable to perform systematic studies on the effect of interface formation in semiconducting superlattice films on both in-plane and cross-plane thermal conductivities. In this study, we determine both the in-plane and cross-plane thermal conductivities of Al2O3 (AO)/ZnO superlattice films grown by atomic layer deposition (ALD) on SiO2/Si substrates in the temperature range of 50-300 K by the four-point-probe 3-ω method. Our experimental results indicate that the formation of an atomic AO layer (0.82 nm) significantly contributes to the decrease of the cross-plane thermal conductivity of the AO/ZnO superlattice films compared with that of AO/ZnO thin films. The cross-plane thermal conductivity (0.26-0.63 W m(-1) K(-1) of the AO/ZnO superlattice films (with an AO layer of ∼0.82 nm thickness) is approximately ∼150%-370% less than the in-plane thermal conductivity (0.96-1.19 W m(-1) K(-1)) of the corresponding film, implying significant anisotropy. This indicates that the suppression of the cross-plane thermal conductivity is mainly attributed to the superlattice, rather than the nanograin columnar structure in the films. In addition, we theoretically analyzed strong anisotropic behavior of the in-plane and cross-plane thermal conductivities of the AO/ZnO superlattice films in terms of temperature dependence.

  6. High-quality ZnO growth, doping, and polarization effect

    NASA Astrophysics Data System (ADS)

    Kun, Tang; Shulin, Gu; Jiandong, Ye; Shunming, Zhu; Rong, Zhang; Youdou, Zheng

    2016-03-01

    The authors have reported their recent progress in the research field of ZnO materials as well as the corresponding global advance. Recent results regarding (1) the development of high-quality epitaxy techniques, (2) the defect physics and the Te/N co-doping mechanism for p-type conduction, and (3) the design, realization, and properties of the ZnMgO/ZnO hetero-structures have been shown and discussed. A complete technology of the growth of high-quality ZnO epi-films and nano-crystals has been developed. The co-doping of N plus an iso-valent element to oxygen has been found to be the most hopeful path to overcome the notorious p-type hurdle. High mobility electrons have been observed in low-dimensional structures utilizing the polarization of ZnMgO and ZnO. Very different properties as well as new physics of the electrons in 2DEG and 3DES have been found as compared to the electrons in the bulk. Project supported by the National Natural Science Foundation of China (Nos. 61025020, 61274058, 61322403, 61504057, 61574075), the Natural Science Foundation of Jiangsu Province (Nos. BK2011437, BK20130013, BK20150585), the Priority Academic Program Development of Jiangsu Higher Education Institutions, and the Fundamental Research Funds for the Central Universities.

  7. Processing and Characterization of In-Situ Generated Nanosilver and Er3+ Co-Doped Bromoborosilicate Glass Nanocomposites.

    PubMed

    Sarkar, Jit; Tarafder, Anal; Karmakar, Basudeb

    2015-09-01

    In the present investigation, bromoborosilicate glass of composition 6Na2O-19K2O-10BaBr2- 2Al2O3-15B2O3-48SiO2 (mole %) added with 0.2 wt% SnO, co-doped with 0.001 wt% Ag and 0.7 wt% Er2O3 in excess amount, was prepared by melt-quench technique. The metal-glass nanocomposites were derived involving a single-step in-situ thermochemical reduction of the precursor glass subjecting an isothermal heat-treatment protocol. The precursor glass and metal glass nanocomposites were characterized by dilatometer, differential scanning calorimeter, X-ray diffractometer, field emission scanning electron microscope, transmission electron microscope, Fourier transform infrared spectrometer, UV-Vis-NIR spectrophotometer, fluorimeter etc. XRD spectra represent the amorphous nature of the samples and without having any sharp peaks of silver (Ag0) and barium bromide (BaBr2). But the FESEM micrograph shows the presence of BaBr2 crystallites in clusters and the TEM micrograph shows the presence of AgO nanoparticles of different shapes and sizes. The precursor glass sample shows sharp absorption peak at 378 nm and 521 nm due to the 4G11,2 and 2H11/2 energy levels of Er3+ but glass nanocomposites exhibit another band at 410 nm due to the surface plasmon resonance of Ag0 nanoparticles. They also show sharp emis- sion peak at 1542 nm due to 4115/2 -+4l13/2 transition of Er3+ ions and prominent upconverted peaks at 630 nm (red, medium) and 645 nm (red, strong) due to 4F9/2 + 1 15/2 transition. The intensity of the absorption and upconverted peaks increases with the duration of heat treatment, having maximum intensity at 5 h and the intensity of the emission peak increases with heat treatment upto 1 h and then decreases for 5 h. Thus these metal-glass nanocomposites show enhanced photoluminescence upconversion and are promising material for different photonic applications.

  8. Photocatalytic enhancement of TiO2 by B and Zr co-doping and modulation of microstructure

    NASA Astrophysics Data System (ADS)

    Fu, Chengxin; Gong, Yinyan; Wu, Yitao; Liu, Jiaqi; Zhang, Zhen; Li, Can; Niu, Lengyuan

    2016-08-01

    Visible-light photodegradation test revealed that B and Zr co-doping can raise the photocatalytic ability of the undoped TiO2 by a fold. XRD crystallography and Raman phonon spectroscopy measurements suggest that the Zr4+ ions replace the Ti4+ ions while the B3+ ions occupy the interstitial sites, expanding the unit-cell volume and reducing crystallite size. The incorporation of interstitial boron dopants creates oxygen vacancies (Ovrad rad) and reduce Ti4+ to Ti3+ to form [Ovrad rad -Ti3+]+, which traps the carriers and prolongs carrier lifetime. Moreover, Zr4+ ions replace Ti4+ ions and form impurity levels, which could improve visible light response. The co-doped samples are benefited from both B interstitials and Zr substitutes.

  9. Bioinspired synthesis of nitrogen/sulfur co-doped graphene as an efficient electrocatalyst for oxygen reduction reaction

    NASA Astrophysics Data System (ADS)

    Zhang, Huanhuan; Liu, Xiangqian; He, Guangli; Zhang, Xiaoxing; Bao, Shujuan; Hu, Weihua

    2015-04-01

    Efficient electrocatalyst of oxygen reduction reaction (ORR) is crucial for a variety of renewable energy applications and heteroatom-doped carbon materials have demonstrated promising catalytic performance towards ORR. In this paper we report a bioinspired method to synthesize nitrogen/sulfur (N/S) co-doped graphene as an efficient ORR electrocatalyst via self-polymerization of polydopamine (PDA) thin layer on graphene oxide sheets, followed by reacting with cysteine and finally thermal annealing in Argon (Ar) atmosphere. As-prepared N/S co-doped graphene exhibits significantly enhanced ORR catalytic activity in alkaline solution compared with pristine graphene or N-doped graphene. It also displays long-term operation stability and strong tolerance to methanol poison effect, indicating it a promising ORR electrocatalyst.

  10. Direct view at colossal permittivity in donor-acceptor (Nb, In) co-doped rutile TiO2

    NASA Astrophysics Data System (ADS)

    Mandal, Suman; Pal, Somnath; Kundu, Asish K.; Menon, Krishnakumar S. R.; Hazarika, Abhijit; Rioult, Maxime; Belkhou, Rachid

    2016-08-01

    Topical observations of colossal permittivity (CP) with low dielectric loss in donor-acceptor cations co-doped rutile TiO2 have opened up several possibilities in microelectronics and energy-storage devices. Yet, the precise origin of the CP behavior, knowledge of which is essential to empower the device integration suitably, is highly disputed in the literature. From spectromicroscopic approach besides dielectric measurements, we explore that microscopic electronic inhomogeneities along with the nano-scale phase boundaries and the low temperature polaronic relaxation are mostly responsible for such a dielectric behavior, rather than electron-pinned defect-dipoles/grain-boundary effects as usually proposed. Donor-acceptor co-doping results in a controlled carrier-hopping inevitably influencing the dielectric loss while invariably upholding the CP value.

  11. Tm3+ and Tm(3+)-Ho3+ co-doped tungsten tellurite glass single mode fiber laser.

    PubMed

    Li, Kefeng; Zhang, Guang; Wang, Xin; Hu, Lili; Kuan, Peiwen; Chen, Danping; Wang, Meng

    2012-04-23

    We investigated the ~2 μm spectroscopic and lasing performance of Tm(3+) and Tm(3+)-Ho(3+) co-doped tungsten tellurite glass single mode fibers with a commercial 800 nm laser diode. The double cladding single mode (SM) fibers were fabricated by using rod-in-tube method. The propagation loss of the fiber was ~2.5 dB/m at 1310 nm. The spectroscopic properties of the fibers were analyzed. A 494 mW laser operating at ~1.9 μm was achieved in a Tm(3+) doped 20 cm long fiber, the slope efficiency was 26%, and the laser beam quality factor M(2) was 1.09. A 35 mW ~2.1 μm laser output was also demonstrated in a 7 cm long of Tm(3+)-Ho(3+) co-doped tungsten tellurite SM fiber.

  12. Novel band gap-tunable K-Na co-doped graphitic carbon nitride prepared by molten salt method

    NASA Astrophysics Data System (ADS)

    Zhao, Jiannan; Ma, Lin; Wang, Haoying; Zhao, Yanfeng; Zhang, Jian; Hu, Shaozheng

    2015-03-01

    Novel band gap-tunable K-Na co-doped graphitic carbon nitride was prepared by molten salt method using melamine, KCl, and NaCl as precursor. X-ray diffraction (XRD), N2 adsorption, Scanning electron microscope (SEM), UV-vis spectroscopy, Photoluminescence (PL), and X-ray photoelectron spectroscopy (XPS) were used to characterize the prepared catalysts. The CB and VB potentials of graphitic carbon nitride could be tuned from -1.09 and +1.55 eV to -0.29 and +2.25 eV by controlling the weight ratio of eutectic salts to melamine. Besides, ions doping inhibited the crystal growth of graphitic carbon nitride, enhanced the surface area, and increased the separation rate of photogenerated electrons and holes. The visible-light-driven Rhodamine B (RhB) photodegradation and mineralization performances were significantly improved after K-Na co-doping.

  13. Electrode effects in dielectric spectroscopy measurements on (Nb+In) co-doped TiO2

    NASA Astrophysics Data System (ADS)

    Crandles, D. A.; Yee, S. M. M.; Savinov, M.; Nuzhnyy, D.; Petzelt, J.; Kamba, S.; Prokeš, J.

    2016-04-01

    Recently, several papers reported the discovery of giant permittivity and low dielectric loss in (Nb+In) co-doped TiO2. A series of tests was performed which included the measurement of the frequency dependence of the dielectric permittivity and alternating current (ac) conductivity of co-doped (Nb+In)TiO2 as a function of electrode type, sample thickness, and temperature. The data suggest that the measurements are strongly affected by the electrodes. The consistency between four-contact van der Pauw direct current conductivity measurements and bulk conductivity values extracted from two-contact ac conductivity measurements suggest that the values of colossal permittivity are, at least in part, a result of Schottky barrier depletion widths that depend on electrode type and temperature.

  14. Fabrication and luminescence behavior of phosphate glass ceramics co-doped with Er3+ and Yb3+

    NASA Astrophysics Data System (ADS)

    Yu, Xiaochen; Duan, Li; Ni, Lei; Wang, Zhuo

    2012-08-01

    Transparent phosphate glass ceramics co-doped with Er3+ and Yb3+ in the system P2O5Li2OCaF2TiO2 were successfully synthesized by melt-quenching and subsequent heating. Formation of the nanocrystals was confirmed by X-ray powder diffraction. Judd-Ofelt analyses of Er3+ ions in the precursor glasses and glass ceramics were performed to evaluate the intensity parameters Ω2,4,6. Under 975 nm excitation, intense upconversion (UC) and infrared emission (1545 nm) were observed in the glass ceramics by efficient energy transfer from Yb3+ to Er3+. The luminescence processes were explained and the emission cross section was calculated by Fuchtbauer-Ladenburg (F-L) formula. The results confirm the potential applications of Er3+/Yb3+ co-doped glass ceramics as laser and fiber amplifier media.

  15. Enhanced visible light photocatalytic performance of g-C3N4 photocatalysts co-doped with iron and phosphorus

    NASA Astrophysics Data System (ADS)

    Hu, Shaozheng; Ma, Lin; You, Jiguang; Li, Fayun; Fan, Zhiping; Lu, Guang; Liu, Dan; Gui, Jianzhou

    2014-08-01

    Preparation of Fe and P co-doped g-C3N4 was described, using dicyandiamide monomer, ferric nitrate, and diammonium hydrogen phosphate as precursor. X-ray diffraction (XRD), N2 adsorption, UV-vis spectroscopy, Fourier transform infrared spectra (FT-IR), photoluminescence (PL), X-ray photoelectron spectroscopy (XPS), and photocurrent measurement were used to characterize the prepared catalysts. The results indicated that the addition of dopants inhibited the crystal growth of graphitic carbon nitride, enhanced the surface area, decreased the band gap energy, and restrained the recombination of photogenerated electrons and holes. Fe and P co-doped g-C3N4 exhibited much higher Rhodamine B (RhB) photodegradation rate and H2 production ability than that of single doped and neat g-C3N4 catalysts. The possible mechanism and doping sites of P and Fe were proposed.

  16. Enhanced magnetocaloric effect in a Co-doped Heusler Mn50Ni37Co3In10 unidirectional crystal

    NASA Astrophysics Data System (ADS)

    Ren, Jian; Feng, Shutong; Fang, Yue; Zhai, Qijie; Luo, Zhiping; Zheng, Hongxing

    2016-11-01

    A high-pressure optical zone-melting technique was employed to grow a Mn-rich Heusler Mn50Ni37Co3In10 unidirectional crystal in the present study. It was found that the Co-doped Mn50Ni37Co3In10 unidirectional crystal showed a low magnetic hysteretic loss and a widened working temperature interval in the vicinity of the martensitic transformation. The inverse magnetic entropy change (∆SM) reached 7.84 Jkg-1K-1 around 237.5 K under a magnetic field change of 30 kOe, and the corresponding effective refrigeration capacity (RCeff) was about 127.2 Jkg-1. The experimental results demonstrated a high potential to develop high-performance Mn-rich Heusler Mn-Ni-In magnetocaloric materials by means of Co doping in combination with the high-pressure optical zone-melting fabrication technique.

  17. Photonic, and photocatalytic behavior of TiO2 mediated by Fe, CO, Ni, N doping and co-doping

    NASA Astrophysics Data System (ADS)

    Wang, Jia; Zhao, Y. F.; Wang, T.; Li, H.; Li, C.

    2015-12-01

    Fe, Co, Ni, or N addition could modulate the photonic and catalytic responses of TiO2 for photocatalysts applications. Their morphologies, structures, compositions and photocatalytic performance in the degradation of methylene blue were characterized by scanning electron microscopy, X-ray diffraction, UV-vis absorption spectroscopy, Raman spectra and X-ray photoelectron spectroscopy. The results showed that dopants affect the electronic transition energies by changing the optical band gap and the impurity absorption peaks of the specimens. Especially, co-doping enhances the visible-light photocatalytic activity of TiO2 by 4-10 times that of pure TiO2, and the Co and N co-doping derives 10-fold photocatalytic activity.

  18. Electronic, optical and photocatalytic behavior of Mn, N doped and co-doped TiO2: Experiment and simulation

    NASA Astrophysics Data System (ADS)

    Zhao, Ya Fei; Li, Can; Lu, Song; Liu, Ru Xi; Hu, Ji Yuan; Gong, Yin Yan; Niu, Leng Yuan

    2016-03-01

    The crystal phase structure, surface morphology, chemical states and optical properties of Mn, N mono-doped and co-doped TiO2 nanoparticles were investigated by X-ray powder diffractometry, Raman spectra, scanning electron microscopy, X-ray photoelectron spectroscopy and UV-vis diffuse reflectance spectroscopy. Meanwhile, geometry structures, formation energies, electronic and optical properties of all systems have been also analyzed by density functional theory. The results showed that the band gap values and the carrier mobility in the valence band, conduction band and impurity levels have a synergetic influence on the visible-light absorption and photocatalytic activity of the doped TiO2. The number and the carrier mobility of impurity level jointly influence the photocatalytic activity of catalyst under visible-light. Especially, the photocatalytic activity of Mn-2N co-doped TiO2 beyond three-fold than that of pure TiO2 under visible-light.

  19. Cobalt and sulfur co-doped nano-size TiO2 for photodegradation of various dyes and phenol.

    PubMed

    Siddiqa, Asima; Masih, Dilshad; Anjum, Dalaver; Siddiq, Muhammad

    2015-11-01

    Various compositions of cobalt and sulfur co-doped titania nano-photocatalyst are synthesized via sol-gel method. A number of techniques including X-ray diffraction (XRD), ultraviolet-visible (UV-Vis), Rutherford backscattering spectrometry (RBS), thermal gravimetric analysis (TGA), Raman, N2 sorption, electron microscopy are used to examine composition, crystalline phase, morphology, distribution of dopants, surface area and optical properties of synthesized materials. The synthesized materials consisted of quasispherical nanoparticles of anatase phase exhibiting a high surface area and homogeneous distribution of dopants. Cobalt and sulfur co-doped titania demonstrated remarkable structural and optical properties leading to an efficient photocatalytic activity for degradation of dyes and phenol under visible light irradiations. Moreover, the effect of dye concentration, catalyst dose and pH on photodegradation behavior of environmental pollutants and recyclability of the catalyst is also examined to optimize the activity of nano-photocatalyst and gain a better understanding of the process.

  20. Electric double layer capacitors employing nitrogen and sulfur co-doped, hierarchically porous graphene electrodes with synergistically enhanced performance

    NASA Astrophysics Data System (ADS)

    Kannan, Aravindaraj G.; Samuthirapandian, Amaresh; Kim, Dong-Won

    2017-01-01

    Hierarchically porous graphene nanosheets co-doped with nitrogen and sulfur are synthesized via a simple hydrothermal method, followed by a pore activation step. Pore architectures are controlled by varying the ratio of chemical activation agents to graphene, and its influence on the capacitive performance is evaluated. The electric double layer capacitor (EDLC) assembled with optimized dual-doped graphene delivers a high specific capacitance of 146.6 F g-1 at a current density of 0.8 A g-1, which is higher than that of cells with un-doped and single-heteroatom doped graphene. The EDLC with dual-doped graphene electrodes exhibits stable cycling performance with a capacitance retention of 94.5% after 25,000 cycles at a current density of 3.2 A g-1. Such a good performance can be attributed to synergistic effects due to co-doping of the graphene nanosheets and the presence of hierarchical porous structures.

  1. Visible light carrier generation in co-doped epitaxial titanate films

    SciTech Connect

    Comes, Ryan B. Kaspar, Tiffany C.; Chambers, Scott A.; Smolin, Sergey Y.; Baxter, Jason B.; Gao, Ran; Apgar, Brent A.; Martin, Lane W.; Bowden, Mark E.

    2015-03-02

    Perovskite titanates such as SrTiO{sub 3} (STO) exhibit a wide range of important functional properties, including ferroelectricity and excellent photocatalytic performance. The wide optical band gap of titanates limits their use in these applications; however, making them ill-suited for integration into solar energy harvesting technologies. Our recent work has shown that by doping STO with equal concentrations of La and Cr, we can enhance visible light absorption in epitaxial thin films while avoiding any compensating defects. In this work, we explore the optical properties of photoexcited carriers in these films. Using spectroscopic ellipsometry, we show that the Cr{sup 3+} dopants, which produce electronic states immediately above the top of the O 2p valence band in STO reduce the direct band gap of the material from 3.75 eV to 2.4–2.7 eV depending on doping levels. Transient reflectance spectroscopy measurements are in agreement with the observations from ellipsometry and confirm that optically generated carriers are present for longer than 2 ns. Finally, through photoelectrochemical methylene blue degradation measurements, we show that these co-doped films exhibit enhanced visible light photocatalysis when compared to pure STO.

  2. Visible-Light-Induced Bactericidal Activity of Titanium Dioxide Co-doped with Nitrogen and Silver

    PubMed Central

    Wu, Pinggui; Xie, Rongcai; Imlay, Kari; Shang, Jian-Ku

    2011-01-01

    Titanium dioxide nanoparticles co-doped with nitrogen and silver (Ag2O/TiON) were synthesized by the sol-gel process and found to be an effective visible light driven photocatalyst. The catalyst showed strong bactericidal activity against Escherichia coli (E. coli) under visible light irradiation (λ> 400 nm). In x-ray photoelectron spectroscopy and x-ray diffraction characterization of the samples, the as-added Ag species mainly exist as Ag2O. Spin trapping EPR study showed Ag addition greatly enhanced the production of hydroxyl radicals (•OH) under visible light irradiation. The results indicate that the Ag2O species trapped eCB− in the process of Ag2O/TiON photocatalytic reaction, thus inhibiting the recombination of eCB− and hVB+ in agreement with the stronger photocatalytic bactericidal activity of Ag2O/TiON. The killing mechanism of Ag2O/TiON under visible light irradiation is shown to be related to oxidative damages in the forms of cell wall thinning and cell disconfiguration. PMID:20726520

  3. Boron and nitrogen co-doped porous carbon and its enhanced properties as supercapacitor

    NASA Astrophysics Data System (ADS)

    Guo, Hongliang; Gao, Qiuming

    Boron and nitrogen co-doped porous carbons (BNCs) were prepared through a facile procedure using citric acid, boric acid and nitrogen as C, B and N precursors, respectively. The BNC samples were characterized by X-ray diffraction (XRD), X-ray photoelectron spectroscopy (XPS), and nitrogen sorption at 77 K. Cyclic voltammetry and galvanostatic charge/discharge experiments were adopted to investigate their electrochemical behaviors. The BNC-9 and BNC-15 samples with high specific surface areas of 894 and 726 m 2 g -1 showed the large specific capacitance up to 268 and 173 F g -1, respectively, with the current of 0.1 A g -1. When the current was set as 1 A g -1, the energy densities were 3.8 and 3.0 Wh kg -1 and the power densities were 165 and 201 W kg -1 for BNC-9 and BNC-15, respectively. Thus, BNC-15 is more suitable to apply in high-power-demanded occasion, while BNC-9 tends to store more energy.

  4. Spectroscopic properties in Er3+/Yb3+ Co-doped fluorophosphate glass

    NASA Astrophysics Data System (ADS)

    Zheng, Tao; Qin, Jie-Ming; Jiang, Da-Yong; Lü, Jing-Wen; Xiao, Sheng-Chun

    2012-04-01

    Using the technique of high-temperature melting, a new Er3+/Yb3+ co-doped fluorophosphate glass was prepared. The absorption and fluorescence spectra were investigated in depth. The effect of Er3+ and Yb3+ concentration on the spectroscopic properties of the glass sample was also discussed. According to the Judd—Ofelt theory, the oscillator strength was computed. The lifetime of 4I13/2 level (τm) of Er3+ ions was 8.23 ms, and the full width at half maximum of the dominating emission peak was 68 nm at 1.53 μm. The large stimulated emission cross section of the Er3+ was calculated by the McCumber theory. The spectroscopic properties of Er3+ ion were compared with those in different glasses. The full width at half maximum and σe are larger than those of other glass hosts, indicating this studied glass may be a potentially useful candidate for high-gain erbium-doped fiber amplifier.

  5. Paramagnetic behavior of Co doped TiO2 nanocrystals controlled by self-purification mechanism

    NASA Astrophysics Data System (ADS)

    Anitha, B.; Khadar, M. Abdul; Banerjee, Alok

    2016-07-01

    Doping in nanocrystals is a challenging process because of the self- purification mechanism which tends to segregate out the dopants resulting in a greater dopant concentration near the surface than at the interior of nanocrystals. In the present work nanocrystals of TiO2 doped with different atom % of Co were synthesized by peroxide gel method. XRD analysis confirmed the tetragonal anatase structure and HRTEM images showed the rod-like morphology of the samples. Raman modes of anatase phase of TiO2 along with weak intensity peaks of Co3O4 for higher Co dopant concentrations were observed for the samples. EPR measurements revealed the presence of cobalt in +2 oxidation state in the TiO2 matrix. SQUID measurements indicated paramagnetic behavior of the Co doped TiO2 nanocrystals. The paramagnetic behavior is attributed to an increased concentration of Co2+ ions and an increased presence of Co3O4 phase near the surface of the TiO2 nanocrystals due to self-purification mechanism.

  6. Visible light carrier generation in co-doped epitaxial titanate films

    SciTech Connect

    Comes, Ryan B.; Smolin, Sergey Y.; Kaspar, Tiffany C.; Gao, Ran; Apgar, Brent A.; Martin, Lane W.; Bowden, Mark E.; Baxter, Jason; Chambers, Scott A.

    2015-03-02

    Perovskite titanates such as SrTiO3 (STO) exhibit a wide range of important functional properties, including high electron mobility, ferroelectricity—which may be valuable in photovoltaic applications—and excellent photocatalytic performance. The wide optical band gap of titanates limits their use in these applications, however, making them ill-suited for integration into solar energy harvesting technologies. Our recent work has shown that by doping STO with equal concentrations of La and Cr we can enhance visible light absorption in epitaxial thin films while avoiding any compensating defects. In this work, we explore the optical properties of photoexcited carriers in these films. Using spectroscopic ellipsometry, we show that the Cr3+ dopants, which produce electronic states immediately above the top of the O 2p valence band in STO reduce the direct band gap of the material from 3.75 eV to between 2.4 and 2.7 eV depending on doping levels. Transient reflectance measurements confirm that optically generated carriers have a recombination lifetime comparable to that of STO and are in agreement with the observations from ellipsometry. Finally, through photoelectrochemical yield measurements, we show that these co-doped films exhibit enhanced visible light photocatalysis when compared to pure STO.

  7. A first-principles study of co-doping in lanthanum bromide

    NASA Astrophysics Data System (ADS)

    Aberg, Daniel; Sadigh, Babak; Schleife, Andre; Erhart, Paul

    2015-03-01

    It was recently shown that the energy resolution of Ce-doped LaBr3 scintillator radiation detectors can be crucially improved by co-doping with Sr, Ca, or Ba. Here we outline a mechanism for this enhancement on the basis of electronic structure calculations. We show that Sr dopants create and bind to Br vacancies, resulting in stable neutral complexes. The association with Sr causes the deep vacancy level to move toward the conduction band edge. This is essential for reducing the effective carrier density available for Auger quenching during thermalization of hot carriers. Subsequent de-trapping of electrons from the complexes can activate Ce dopants that have previously captured a hole leading to luminescence. This mechanism implies an overall reduction of Auger quenching of free carriers, which is expected to improve the linearity of the photon light yield with respect to the energy of incident electron or photon. Optical properties of the Ce-Sr-vacancy triple complex are discussed and compared to experiment. Prepared by LLNL under Contract DE-AC52-07NA27344. Support from the National Nuclear Security Administration Office of Nonproliferation Research and Development (NA-22) is acknowledged.

  8. Characterization and photoluminescence of Co-doped SiC films

    SciTech Connect

    Sun, Xianke; Jin, Xin; Wang, Shiqi; Liu, Huarui; Sun, Peng; An, Yukai; Guo, Ruisong; Liu, Jiwen

    2013-11-15

    Co-doped SiC films are fabricated on Si (100) substrates by radio frequency magnetron sputtering, and the crystal structure, composition, element valences, local structure, and photoluminescence of the films are studied. Crystal structure analysis identifies the film structure as 3C-SiC and shows that the Co dopant atoms form CoSi secondary phase compounds in the films. The composition and element valence analysis show that the Co dopant atoms substituting for C sites in the SiC lattice exist in the form of Co{sup 2+} ions, and that C clusters are present in the films, which increase in amount with increasing Co dopant concentration. The analysis of local structure reveals that Co clusters, CoO and Co{sub 3}O{sub 4}, are not present in the films, and CoSi secondary phase compounds exist. All of the films show a violet photoluminescence peak located at 413 nm, which becomes stronger with increased Co dopant concentration and annealing temperature, and is found to originate from the C clusters.

  9. Room temperature ferromagnetism in Co-doped amorphous carbon composites from the spin polarized semiconductor band

    SciTech Connect

    Hsu, H. S. Chien, P. C.; Chang, Y. Y.; Sun, S. J.; Lee, C. H.

    2014-08-04

    This study provides conclusive evidence of room temperature ferromagnetism in Co-doped amorphous carbon (a-C) composites from the spin polarized semiconductor band. These composites are constructed from discontinuous [Co(3 nm)/a-C(d{sub c} nm)]{sub 5} multilayers with d{sub c} = 3 nm and d{sub c} = 6 nm. Only remnant circular dichroism (CD) was observed from the d{sub c} = 3 nm sample but not when d{sub c} = 6 nm. In addition, the remnant CD peaks at 5.5 eV, which is comparable with the absorption peak associated with the C σ-σ* gap transition. We suggest that the possible mechanism for this coupling can be considered as a magnetic proximity effect in which a ferromagnetic moment in the C medium is induced by Co/C interfaces.

  10. Novel erbia-yttria co-doped zirconia fluorescent thermal history sensor

    NASA Astrophysics Data System (ADS)

    Copin, E. B.; Massol, X.; Amiel, S.; Sentenac, T.; Le Maoult, Y.; Lours, P.

    2017-01-01

    Thermochromic pigments are commonly used for off-line temperature mapping on components from systems operating at a temperature higher than 1073 K. However, their temperature resolution is often limited by the discrete number of color transitions they offer. This paper investigates the potential of erbia-yttria co-doped zirconia as a florescent thermal history sensor alternative to thermochromic pigments. Samples of yttria-stabilized zirconia powder (YSZ, 8.3 mol% YO1.5) doped with 1.5 mol% ErO1.5 and synthesized by a sol-gel route are calcined for 15 minutes under isothermal conditions between 1173 and 1423 K. The effects of temperature on their crystal structure and room temperature fluorescence properties are then studied. Results show a steady increase of the crystallinity of the powders with temperature, causing a significant and permanent increase of the emission intensity and fluorescence lifetime which could be used to determine temperature with a calculated theoretical resolution lower than 1 K for intensity. The intensity ratio obtained using a temperature insensitive YSZ:Eu3+ reference phosphor is proposed as a more robust parameter regarding experimental conditions for determining thermal history. Finally, the possibilities for integrating this fluorescent marker into sol-gel deposited coatings for future practical thermal history sensing applications is also discussed.

  11. Ag-Si Co-doped TiO2 photocatalyst synthesized via a nonaqueous method.

    PubMed

    Chen, Qifeng; Shi, Weimei; Xu, Yao; Wu, Dong; Sun, Yuhan

    2010-11-01

    Ag-Si/TiO2 photocatalysts were synthesized in a nonaqueous system at 140 degrees C, and then annealed at different temperatures. The obtained photocatalysts were characterized by XRD, TEM, BET, TG-DTA, XPS, as well as UV-vis DRS. The results showed that All Ag-Si/TiO2 held an anatase phase and high thermal stability and the phase transformation from anatase to rutile was retarded to about 900 degrees C. The Ag-Si/TiO2 particles were highly mono-dispersed and the particles size became smaller compared to TiO2. Additionally, UV-vis light absorption shifted to visible region after Ag doping. Si weaved into the matrix of TiO2, while Ag dispersed on the surface of TiO2 particles. The visible light photocatalytic activity was evaluated by Rhodamine B (RhB) degradation in an aqueous solution under visible light irradiation. It was found that the photccatalytic activities of the obtained Ag-Si/TiO2 samples were all higher than those of pure TiO2 and Ag/TiO2, reaching the maximum at the Ag and Si content of 0.5 mol% and 20.0 mol%, respectively. The enhanced visible photocatalytic activity may be attributed to the simultaneous effects of silver and silicon co-doping.

  12. Paramagnetic behavior of Co doped TiO{sub 2} nanocrystals controlled by self-purification mechanism

    SciTech Connect

    Anitha, B.; Khadar, M. Abdul; Banerjee, Alok

    2016-07-15

    Doping in nanocrystals is a challenging process because of the self- purification mechanism which tends to segregate out the dopants resulting in a greater dopant concentration near the surface than at the interior of nanocrystals. In the present work nanocrystals of TiO{sub 2} doped with different atom % of Co were synthesized by peroxide gel method. XRD analysis confirmed the tetragonal anatase structure and HRTEM images showed the rod-like morphology of the samples. Raman modes of anatase phase of TiO{sub 2} along with weak intensity peaks of Co{sub 3}O{sub 4} for higher Co dopant concentrations were observed for the samples. EPR measurements revealed the presence of cobalt in +2 oxidation state in the TiO{sub 2} matrix. SQUID measurements indicated paramagnetic behavior of the Co doped TiO{sub 2} nanocrystals. The paramagnetic behavior is attributed to an increased concentration of Co{sup 2+} ions and an increased presence of Co{sub 3}O{sub 4} phase near the surface of the TiO{sub 2} nanocrystals due to self-purification mechanism. - Graphical abstract: Variation of the intensity ratios of XRD peaks as a function of atomic ratio of Co. Inset: variation of structure factor for (101) reflection as a function of atomic ratio of Co. Display Omitted - Highlights: • Co doped TiO{sub 2} nanocrystals were synthesized by peroxide gel method. • HRTEM images showed Co doped TiO{sub 2} nanocrystals to be rod-like. • EPR spectra showed +2 oxidation states for Co in the samples. • Co doped TiO{sub 2} nanocrystals showed paramagnetic behavior.

  13. Preparation and characterization of zinc and copper co-doped WO3 nanoparticles: Application in photocatalysis and photobiology.

    PubMed

    Mohammadi, Sanaz; Sohrabi, Maryam; Golikand, Ahmad Nozad; Fakhri, Ali

    2016-08-01

    In this study, pure, Zn, Cu, Zn,Cu co-doped WO3 nanoparticles samples were prepared by precipitation and co-precipitation methods. These nanoparticles were characterized by field emission scanning electron microscopy (FE-SEM), X-ray diffraction (XRD), energy dispersive X-ray spectrometer (EDX), Dynamic light scattering (DLS), UV-visible and photoluminescence (PL) spectroscopy. The synthesized pure, Zn, Cu, Zn,Cu co-doped WO3 nanoparticles have smart optical properties and average sizes with 3.2, 3.12, 3.08 and 2.97eV of band-gap, 18.1, 23.2, 25.7 and 30.2nm, respectively. Photocatalytic activity of four nanoparticles was studying towards degradation of gentamicin antibiotic under ultraviolet and visible light irradiation. The result showed that Zn,Cu co-doped WO3 possessed high photocatalytic activity. The photocatalytic activity of WO3 nanoparticles could be remarkably increased by doping the Zn and Cu impurity. This can be attributed to the fact that the red shift of absorption edge and the trapping effect of the mono and co-doped WO3 nanoparticles. The research result presents a general and effective way to prepare different photocatalysts with enhanced visible and UV light-driven photocatalytic performance. Antibacterial activity of four different WO3 nanoparticles against Escherichia coli bacterium has been assessed by the agar disc method under light irradiation and dark medium. It is concluded from the present findings that WO3 nanoparticles can be used as an efficient antibacterial agent.

  14. Effects of acceptor-donor complexes on electronic structure properties in co-doped TiO2: A first-principles study

    NASA Astrophysics Data System (ADS)

    Zhang, L.; Cai, L. L.; Yuan, X. B.; Hu, G. C.; Ren, J. F.

    2016-07-01

    We theoretically investigate the doping effects induced by impurity complexes on the electronic structures of anatase TiO2 based on the density functional theory. Mono-doping and co-doping effects are discussed separately. The results show that the impurity doping can make the band-edges shift. The induced defect levels in the band gaps by impurity doping reduce the band gap predominantly. The compensated acceptor-donor pairs in the co-doped TiO2 will improve the photoelectrochemical activity. From the calculations, it is also found that (S+Zr)-co-doped TiO2 has the ideal band gap and band edge, at the same time, the binding energy is higher than other systems, so (S+Zr)-co-doping in TiO2 is more promise in photoelectrochemical experiments.

  15. Effect of Co doping on structural, optical, magnetic and dielectric properties of Bi{sub 2}Fe{sub 4}O{sub 9}

    SciTech Connect

    Mohapatra, S. R.; Sahu, B.; Singh, A. K.; Kaushik, S. D.

    2015-06-24

    Polycrystalline Bi{sub 2}Fe{sub 4}O{sub 9} and 2% Co doped Bi{sub 2}Fe{sub 4}O{sub 9} were prepared by solid state reaction route. X-ray diffraction (XRD) result reveals that there is no change in the crystal structure due to Co doping and the compound has orthorhombic structure. UV-visible spectroscopy confirms the decrease in band gap due Co doping. Zero field cooled magnetization measurement at 100 Oe magnetic field shows substantial decrease in the magnetic transition temperature. Room temperature frequency dependent dielectric permittivity at 1V DC bias shows ∼10% increase in Co doped sample with respect to pure Bi{sub 2}Fe{sub 4}O{sub 9}.

  16. Poole-Frenkel effect on electrical characterization of Al-doped ZnO films deposited on p-type GaN

    SciTech Connect

    Huang, Bohr-Ran; Liao, Chung-Chi; Ke, Wen-Cheng Chang, Yuan-Ching; Huang, Hao-Ping; Chen, Nai-Chuan

    2014-03-21

    This paper presents the electrical properties of Al-doped ZnO (AZO) films directly grown on two types of p-type GaN thin films. The low-pressure p-GaN thin films (LP-p-GaN) exhibited structural properties of high-density edge-type threading dislocations (TDs) and compensated defects (i.e., nitrogen vacancy). Compared with high-pressure p-GaN thin films (HP-p-GaN), X-ray photoemission spectroscopy of Ga 3d core levels indicated that the surface Fermi-level shifted toward the higher binding-energy side by approximately 0.7 eV. The high-density edge-type TDs and compensated defects enabled surface Fermi-level shifting above the intrinsic Fermi-level, causing the surface of LP-p-GaN thin films to invert to n-type semiconductor. A highly nonlinear increase in leakage current regarding reverse-bias voltage was observed for AZO/LP-p-GaN. The theoretical fits for the reverse-bias voltage region indicated that the field-assisted thermal ionization of carriers from defect associated traps, which is known as the Poole-Frenkel effect, dominated the I-V behavior of AZO/LP-p-GaN. The fitting result estimated the trap energy level at 0.62 eV below the conduction band edge. In addition, the optical band gap increased from 3.50 eV for as-deposited AZO films to 3.62 eV for 300 °C annealed AZO films because of the increased carrier concentration. The increasing Fermi-level of the 300 °C annealed AZO films enabled the carrier transport to move across the interface into the LP-p-GaN thin films without any thermal activated energy. Thus, the Ohmic behavior of AZO contact can be achieved directly on the low-pressure p-GaN films at room temperature.

  17. Characteristics of Al-doped ZnO thin films prepared in Ar + H{sub 2} atmosphere and their vacuum annealing behavior

    SciTech Connect

    Zhu, Bailin; Lü, Kun; Wang, Jun; Li, Taotao; Wu, Jun; Zeng, Dawen; Xie, Changsheng

    2013-11-15

    The microstructure and electrical–optical properties of Al-doped ZnO (AZO) films have been studied as a function of H{sub 2} flux in the magnetron sputtering process at 150 °C and postannealing temperature in vacuum. As H{sub 2} flux increases in the sputtering gas, the AZO films deposited have a (002) preferred orientation rather than the mixed (100) and (002) orientations, the grain size shows a tendency to first increase then decrease, and (002) diffraction peak position is inclined to shift to higher angles first then to lower angles. The resistivity of the films first decreases then increases with H{sub 2} flux, and the lowest resistivity of 4.02 × 10{sup −4}Ω cm is obtained at a H{sub 2} flux of 10 sccm. The average transmittance in the visible region shows little dependence on H{sub 2} flux. As a whole, the AZO films with higher values of figure of merit are obtained when the H{sub 2} flux is in the range of 6–12 sccm. The AZO films deposited in Ar and Ar + H{sub 2} exhibit different annealing behaviors. For the AZO film deposited in Ar, the grain size gradually increases, the stresses are relaxed, the resistivity first decreases then increases, and the average transmittance in the visible region is unchanged initially then somewhat decreased as annealing temperature is increased. The optimum annealing temperature for improving properties of AZO films deposited in Ar is 300 °C. For the AZO films deposited in Ar + H{sub 2}, annealing does not significantly change the microstructure but increases the resistivity of the films; the average transmittance in the visible region remains unchanged initially but greatly reduced with further increase in annealing temperature. The carrier transport in the as-deposited and annealed films appears to be controlled by a mechanism of grain boundary scattering, and the value of E{sub g} increases with the increase in carrier concentration due to Burstein–Moss effect.

  18. Structural transitions and enhanced ferroelectricity in Ca and Mn co-doped BiFeO3 thin films

    NASA Astrophysics Data System (ADS)

    Huang, Ji-Zhou; Shen, Yang; Li, Ming; Nan, Ce-Wen

    2011-11-01

    Ca and Mn co-doped BiFeO3 (BFO) thin films were fabricated on (111) Pt/Ti/SiO2/Si substrates via a simple solution approach. Enhanced ferroelectric properties were obtained in these Ca and Mn co-doped BFO films, e.g., large remnant polarization value (Pr ˜ 89 μC/cm2) and large remnant polarization to saturated polarization ratio (Pr/Ps ˜ 0.84) for Bi0.90Ca0.10Fe0.90Mn0.10O3 film. X-ray diffraction and Raman spectra of these films showed that B-site Mn doping causes substantial structural transition toward orthorhombic phase and A-site Ca doping facilitates an evolution to tetragonal phase with higher crystal symmetry. The structural transitions are in favor of enhanced ferroelectric properties in the BFO films. The approach of A and B site co-doping is proved to be effective in enhancing ferroelectric performance in multiferroic BFO films.

  19. Analysis of thermal and structural properties of germanate glasses co-doped with Yb3+/Tb3+ ions

    NASA Astrophysics Data System (ADS)

    Zmojda, J.; Kochanowicz, M.; Miluski, P.; Dorosz, D.; Jelen, P.; Sitarz, M.

    2014-10-01

    In the work the new glass compositions in the GeO2-GaO-BaO system have been prepared and thermal, structural properties of in germanate glasses co-doped with Yb3+/Tb3+ions were studied. Glasses were obtained by conventional high-temperature melt-quenching technique. The study of the crystallization kinetics processes of glasses co-doped with 0.7Yb2O3:0.7Tb2O3 was performed with DSC measurements. The activation energies have been calculated using Freedman analysis and verified with the Flynn-Wall-Ozawa method. In this order, the DSC curves have been registered with different heating rates, between 5 and 15 degrees/min. The structure of fabricated glasses has been studied by infrared and Raman spectroscopes. The effect of heat treatment on the structural properties was determined. In all glass samples the dominated infrared absorbance band at 800 cm-1 corresponds to asymmetric stretching motions of GeO4 tetrahedra containing bridging (Ge-O(Ge)) and non-bridging (Ge-O-) oxygens. Additionally, the influence of heat treatment on the luminescent properties was evaluated. Strong luminescence at 489, 543, 586 and 621 nm corresponding to 5D4 → 7FJ (J = 6, 5, 4, 3) transitions was measured. The highest upconversion emission intensity was obtained in the germanate glass co-doped with 0.7Yb2O3/0.7Tb2O3.

  20. Intense up-conversion luminescence in Er3+/Yb3+ co-doped CeO2 powders.

    PubMed

    Singh, Vijay; Rathaiah, M; Venkatramu, V; Haase, Markus; Kim, S H

    2014-03-25

    The Er(3+) and Er(3+)/Yb(3+) co-doped CeO2 powders have been prepared by a urea combustion route. The structural, morphological, compositional and vibrational analysis of the Er(3+):CeO2 and Er(3+)/Yb(3+):CeO2 powders have been studied by X-ray diffraction, scanning electron microscopy, energy dispersive X-ray and Fourier transform infrared spectroscopy. The optical and luminescence properties of Er(3+):CeO2 and Er(3+)/Yb(3+):CeO2 powders have been studied by using laser excited spectroscopy. The effects of Yb(3+) doping on up-conversion luminescence of Er(3+) co-doped CeO2 powders were studied. The ratio of red to green intensity is decreased in Er(3+):CeO2 whereas the ratio is increased in Er(3+)/Yb(3+):CeO2 powders with increase of power. The effect of co-doping with the Yb(3+) ions on the visible luminescence of Er(3+) and the energy transfer mechanism responsible for the variation in the green and red intensity are discussed. The results indicate that these materials may be suitable for display and light emitting devices.

  1. Structural, Optical, and Magnetic Properties of Solution-Processed Co-Doped ZnS Thin Films

    NASA Astrophysics Data System (ADS)

    Goktas, A.; Mutlu, İ. H.

    2016-11-01

    Co-doped ZnS thin films have been grown on glass substrates using solution-processing and dip-coating techniques, and the impact of the Co doping level (0% to 5%) and film thickness on certain characteristics examined. X-ray diffraction study revealed that all the films possessed hexagonal crystal structure. Energy-dispersive x-ray analysis confirmed presence of Zn, Co, and S in the samples. Scanning electron microscopy showed that the film surface was homogeneous and dense with some cracks and spots. X-ray photoelectron spectroscopy confirmed introduction and integration of Co2+ ions into the ZnS thin films. Compared with undoped ZnS, optical studies indicated a reduction in optical bandgap energy ( E g) while the refractive index ( n), extinction coefficient ( k), and dielectric constants ( ɛ 1, ɛ 2) increased with film thickness ( t) and Co doping level (except for 5%). Photoluminescence spectra showed enhanced luminescence intensity as the Co concentration was increased, while the dependence on t showed an initial increase followed by a decrease. The origin of the observed low-temperature (5 K and 100 K) ferromagnetic order may be related to point defects such as zinc vacancies, zinc interstitials, and sulfide vacancies or to the grain-boundary effect.

  2. Analysis of thermal and structural properties of germanate glasses co-doped with Yb(3+)/Tb(3+) ions.

    PubMed

    Zmojda, J; Kochanowicz, M; Miluski, P; Dorosz, D; Jelen, P; Sitarz, M

    2014-10-15

    In the work the new glass compositions in the GeO2-GaO-BaO system have been prepared and thermal, structural properties of in germanate glasses co-doped with Yb(3+)/Tb(3+)ions were studied. Glasses were obtained by conventional high-temperature melt-quenching technique. The study of the crystallization kinetics processes of glasses co-doped with 0.7Yb2O3:0.7Tb2O3 was performed with DSC measurements. The activation energies have been calculated using Freedman analysis and verified with the Flynn-Wall-Ozawa method. In this order, the DSC curves have been registered with different heating rates, between 5 and 15 degrees/min. The structure of fabricated glasses has been studied by infrared and Raman spectroscopes. The effect of heat treatment on the structural properties was determined. In all glass samples the dominated infrared absorbance band at 800cm(-1) corresponds to asymmetric stretching motions of GeO4 tetrahedra containing bridging (Ge-O(Ge)) and non-bridging (Ge-O(-)) oxygens. Additionally, the influence of heat treatment on the luminescent properties was evaluated. Strong luminescence at 489, 543, 586 and 621nm corresponding to (5)D4→(7)FJ (J=6, 5, 4, 3) transitions was measured. The highest upconversion emission intensity was obtained in the germanate glass co-doped with 0.7Yb2O3/0.7Tb2O3.

  3. Oxygen and nitrogen co-doped porous carbon nanosheets derived from Perilla frutescens for high volumetric performance supercapacitors

    NASA Astrophysics Data System (ADS)

    Liu, Bei; Liu, Yijiang; Chen, Hongbiao; Yang, Mei; Li, Huaming

    2017-02-01

    Biomass-derived O/N-co-doped porous carbons have become the most competitive electrode materials for supercapacitors because of their renewability and sustainability. We herein present a simple approach to fabricate O/N-co-doped porous carbon nanosheets by the direct pyrolysis of Perilla frutescens (PF) leaves. Under optimum pyrolysis temperature (700 °C), the PF leaf-derived carbon nanosheets (PFC-700) having O, N contents of 18.76 at.% and 1.70 at.%, respectively, exhibit a hierarchical pore structure with a moderate BET surface area (655 m2 g-1) and a relatively low pore volume (0.44 cm3 g-1). Such O/N-co-doped porous carbon nanosheets display both high gravimetric capacitance (270 F g-1 at 0.5 A g-1) and high volumetric capacitance (287 F cm-3 at 0.5 A g-1). In addition, the PFC-700-based symmetric supercapacitor offers a high volumetric energy density (14.8 Wh L-1 at 490 W L-1) as well as a high stability (about 96.1% of capacitance retention after 10000 cycles at 2 A g-1).

  4. Preparation and photocatalytic activity of B, Ce Co-doped TiO2 hollow fibers photocatalyst

    NASA Astrophysics Data System (ADS)

    Qiu, Jingping; Sun, Xiaogang; Xing, Jun; Liu, Xiaobo

    2014-07-01

    A series of B, Ce co-doped TiO2 (B, Ce-TiO2) photocatalytic materials with a hollow fiber structure were successfully prepared by template method using boric acid, ammonium ceric nitrate and tetrabutyltitanate as precursors and cotton fibers as template, followed by calcination at 500°C in an N2 atmosphere for 2 h. Scanning electron microscopy (SEM), X-ray diffraction (XRD), nitrogen adsorption-desorption measurements, and UV-visible spectroscopy (UV-Vis) were employed to characterize the morphology, crystal structure, surface structure, and optical absorption properties of the samples. The photocatalytic performance of the samples was studied by photodegradation phenol in water under UV light irradiation. The results showed that the TiO2 fiber materials have hollow structures, and the fiber structure materials showed better photocatalytic properties for the degradation of phenol than pure TiO2 under UV light. In the experiment condition, the photocatalytic activity of B, Ce co-doped TiO2 fibers was optimal of all the prepared samples. In addition, the possibility of cyclic usage of B, Ce co-doped TiO2 fiber photocatalyst was also confirmed, the photocatalytic activity of TiO2 fibers remained above 90% of that of the fresh sample after being used four times. The material was easily removed by centrifugal separation from the medium. It can therefore be potentially applied for the treatment of water contaminated by organic pollutants.

  5. Photocatalytic removal of 2-nitrophenol using silver and sulfur co-doped TiO₂under natural solar light.

    PubMed

    Feilizadeh, Mehrzad; Delparish, Amin; Toufigh Bararpour, S; Abedini Najafabadi, Hamed; Mohammad Esmaeil Zakeri, S; Vossoughi, Manouchehr

    2015-01-01

    To overcome the drawback of poor solar light utilization brought about by the narrow photoresponse range of TiO₂, a silver and sulfur co-doped TiO₂was synthesized. Using the prepared catalyst, solar photocatalytic degradation of 2-nitrophenol (2-NP) by a TiO₂-based catalyst was studied for the first time. Effects of the co-doping on the structural, optical and morphological properties of the synthesized nanoparticles were investigated by different characterization methods: X-ray diffraction, N2 adsorption-desorption measurements, scanning electron microscopy, transmission electron microscopy, energy-dispersive X-ray spectroscopy, UV-visible diffuse reflectance spectroscopy and Fourier transform infrared spectroscopy. Solar experiments showed that the co-doping with silver and sulfur significantly increased the photocatalytic activity. In various initial concentrations of 2-NP more than 99% of the contaminant was decomposed by Ag-S/TiO₂in less than 150 minutes, while the degradation efficiency was much less in the presence of bare TiO₂. Kinetic studies suggested that solar photocatalytic degradation of 2-NP is consistent with the Langmuir-Hinshelwood model. The rate constant of the reaction and adsorption constant of the modified photocatalyst were found to be 2.4 and 4.1 times larger than that of bare TiO₂, respectively.

  6. Luminescence and energy transfer mechanism in Eu3+/Tb3+-co-doped ZrO2 nanocrystal rods

    NASA Astrophysics Data System (ADS)

    Ahemen, I.; Dejene, F. B.

    2017-01-01

    Nanocrystal rods of Eu3+/Tb3+-co-doped ZrO2 were synthesized using a simple chemical precipitation technique. Both ions were successfully doped into the Zr4+ ion site in a mixed structure containing both monoclinic and tetragonal phases. The Eu3+ or Tb3+ singly doped zirconia produced red and green luminescence which are characteristics of Eu3+ and Tb3+ ions, respectively. The co-doped zirconia samples produced blue emission from defect states transitions in the host ZrO2, red and green luminescence from dopant ions giving cool to warm white light emissions. The phosphors were efficiently excited by ultraviolet and near-ultraviolet/blue radiations giving white and red light, respectively. The decay lifetime was found to increase with increasing donor ion concentration contrary to conventional observations reported by previous researchers. Weak quadrupole-quatdrupole multipolar process was responsible for energy transfer from Tb3+ (donor) ion to Eu3+ ion. No energy back-transfer from Eu3+ to Tb3+ ion was observed from the excitation spectra. Temperature-dependent photoluminescence shows the presence of defects at low temperature, but these defects vanished at room temperature and beyond. The Eu3+/Tb3+-co-doped ZrO2 nanocrystal rod is a potential phosphor for white light application using UV as an excitation source. Thermoluminescence measurements show that the inclusion of Tb3+ ion increases trap depths in the host zirconia.

  7. Effect of (Nd, Ni) co-doped on the multiferroic and photocatalytic properties of BiFeO{sub 3}

    SciTech Connect

    Vanga, Pradeep Reddy; Mangalaraja, R.V.; Ashok, M.

    2015-12-15

    Highlights: • Sol–gel synthesis. • Saturation magnetization and ferroelectricity increases in Ni co-doped samples. • Conduction mechanism is different in Nd doped and (Nd, Ni) co-doped samples. • Samples show good photocatalytic activity in the presence of H{sub 2}O{sub 2}. - Abstract: Bi{sub 0.95}Nd{sub 0.05}Fe{sub 1−x}Ni{sub x}O{sub 3} (x = 0, 0.01, 0.03 and 0.05) samples are synthesized by solgel method. The phase and crystal structure of the samples are confirmed by X-ray diffraction studies, Rietveld refinement is performed to calculate the structural parameters. The reflectance spectra show bands in UV and visible region and the optical band gap is calculated using Kulbeka–Munk function. The magnetization and leakage current density are strongly influenced by doping. Different conduction mechanisms are observed in Nd doped and Ni co-doped samples. All the samples exhibit ferroelectric nature at various frequencies. Photocatalytic activities of the samples are determined by the degradation of methylene blue dye in the presence of visible light and H{sub 2}O{sub 2} which shows samples are good photo-Fenton like catalyst.

  8. FABRICATION AND PHOTOCATALYTIC PROPERTIES OF TiO2 NANOFILMS CO-DOPED WITH Fe3+ AND Bi3+ IONS

    NASA Astrophysics Data System (ADS)

    Gao, Qiongzhi; Liu, Xin; Liu, Wei; Liu, Fang; Fang, Yueping; Zhang, Shiying; Zhou, Wuyi

    2016-12-01

    In this work, the titanium dioxide (TiO2) nanofilms co-doped with Fe3+ and Bi3+ ions were successfully fabricated by the sol-gel method with dip-coating process. Methylene blue was used as the target degradation chemical to study the photocatalytic properties affected by different doping contents of Fe3+ and Bi3+ ions. The samples were characterized by X-ray diffractometer (XRD), scanning electron microscopy (SEM) and infrared (IR) spectroscopy. The results indicated that both pure TiO2 nanofilms and single-doped samples possessed the photocatalytic activity in degradation of methylene blue. However, when the nanofilms co-doped with Fe3+ and Bi3+ ions were fabricated at the molar ratio of 3:1 (Fe3+:Bi3+), they exhibited the best photocatalytic activity after the heat treatment at 500∘C for 2h. The wettability property test indicated that the TiO2 nanofilms co-doped with Fe3+ and Bi3+ ions in the molar ratio 3:1 owned an excellent hydrophilic property.

  9. Influence of doping Co to characterization of ZnO nanostructures

    NASA Astrophysics Data System (ADS)

    Thuy Doan, Minh; Ho, Xuan Vinh; Nguyen, Tu; Nghia Nguyen, Van

    2014-06-01

    Cobalt doped zinc oxide nanoparticles were successfully synthesized using the hydrothermal method. The structure of these nanoparticles studied using x-ray diffraction clearly presented the existence of Co3O4 phase in the 4% Co-doped ZnO samples. Field-emission electron scanning microscopy (FESEM) was used to examine the morphologies of products. Optical absorption measurements confirm the presence of a strong ultraviolet peak at 374 nm. The room temperature photoluminescence spectra investigated under the excitation at 325 nm by a neon laser exhibit both the ultraviolet and visible emission bands.

  10. Mediator-free interaction of glucose oxidase, as model enzyme for immobilization, with Al-doped and undoped ZnO thin films laser-deposited on polycarbonate supports.

    PubMed

    V T K P, Fidal; Inguva, Saikumar; Krishnamurthy, Satheesh; Marsili, Enrico; Mosnier, Jean-Paul; T S, Chandra

    2017-01-01

    Al doped and undoped ZnO thin films were deposited by pulsed-laser deposition on polycarbonate sheets. The films were characterized by optical transmission, Hall effect measurement, XRD and SEM. Optical transmission and surface reflectometry studies showed good transparency with thicknesses ∼100nm and surface roughness of 10nm. Hall effect measurements showed that the sheet carrier concentration was -1.44×10(15)cm(-2) for AZO and -6×10(14)cm(-2) for ZnO. The films were then modified by drop-casting glucose oxidase (GOx) without the use of any mediators. Higher protein concentration was observed on ZnO as compared to AZO with higher specific activity for ZnO (0.042Umg(-1)) compared to AZO (0.032Umg(-1)), and was in agreement with cyclic voltemmetry (CV). X-ray photoelectron spectroscopy (XPS) suggested that the protein was bound by dipole interactions between AZO lattice oxygen and the amino group of the enzyme. Chronoamperometry showed sensitivity of 5.5μAmM(-1)cm(-2) towards glucose for GOx/AZO and 2.2μAmM(-1)cm(-2) for GOx/ZnO. The limit of detection (LoD) was 167μM of glucose for GOx/AZO, as compared to 360μM for GOx/ZnO. The linearity was 0.28-28mM for GOx/AZO whereas it was 0.6-28mM for GOx/ZnO with a response time of 10s. Possibly due to higher enzyme loading, the decrease of impedance in presence of glucose was larger for GOx/ZnO as compared to GOx/AZO in electrochemical impedance spectroscopy (EIS). Analyses with clinical blood serum samples showed that the systems had good reproducibility and accuracy. The characteristics of novel ZnO and AZO thin films with GOx as a model enzyme, should prove useful for the future fabrication of inexpensive, highly sensitive, disposable electrochemical biosensors for high throughput diagnostics.

  11. The synergetic effect of V and Fe-co-doping in TiO2 studied from the DFT + U first-principle calculation

    NASA Astrophysics Data System (ADS)

    Liu, Baoshun; Zhao, Xiujian

    2017-03-01

    Based on the density functional theory (DFT + U), a detailed study on the energetic, electronic, and optical properties of Fe-, V-, and Fe & V-co-doping anatase and rutile TiO2 was performed The synergetic effect of Fe & V bimetal co-doping on the optical absorption was discussed on electronic level. Two kinds of co-dopants were considered, which included edge-shared and corner-shared co-doping. It was shown that Fe and V atoms prefer to replace Ti atom in the O-rich contions than in the Ti-rich conditions. Co-doping in anatase reduces the formation energies in both cases, while the formation energies for rutile cannot be decreased. The Bader charge analysis indicates the +3 of Fe atom and +4 of V atom, and the obvious electron exchange between Fe and V atom in co-doping cases can be identified, which indicates the presence of synergetic effect induced by co-doping. The cooperation of Fe & V co-dopants was also supported by the result of projected density of states and spin charge density differences, as the hybridization of Fe3d with V3d orbitals was seen within the TiO2 forbidden band. Different from single-dopant systems, the V3d-Fe3d co-interaction leads to the formation of some spin mid-gap states, which have an obvious effect on the optical absorptions.

  12. Charge defects and highly enhanced multiferroic properties in Mn and Cu co-doped BiFeO3 thin films

    NASA Astrophysics Data System (ADS)

    Dong, Guohua; Tan, Guoqiang; Luo, Yangyang; Liu, Wenlong; Xia, Ao; Ren, Huijun

    2014-06-01

    Pure BiFeO3 (BFO) and Mn, Cu co-doped BiFeO3 (BFMCO) thin films were deposited on fluorine doped tin oxide (FTO) substrates by a chemical solution deposition method. Detailed investigations were made on the effects of Mn and Cu co-doping on the crystal structure, the defect chemistry, multiferroic properties of the BFO thin films. With the co-doping of Mn and Cu, a structural transition from the rhombohedral (R3c:H) to the biphasic structure (R3c:H + P1) is confirmed by XRD, Rietveld refinement and Raman analysis. X-ray photoelectron spectroscopy (XPS) analysis shows that the coexistence of Fe2+/Fe3+ and Mn2+/Mn3+ ions in the co-doping films are demonstrated. Meanwhile, the way of the co-doping at B-sits is conducive to suppress Fe valence state of volatility and to decrease oxygen vacancies and leakage current. It's worth noting that the co-doping can induce the superior ferroelectric properties (a huge remanent polarization, 2Pr ∼ 220 μC/cm2 and a relatively low coercive field, 2Ec ∼ 614 kV/cm). The introduction of Mn2+ and Cu2+ ions optimizes the magnetic properties of BFO thin films by the biphasic structure and the destruction of spin cycloid.

  13. Low-Temperature PLD-Growth of Ultrathin ZnO Nanowires by Using Zn x Al1- x O and Zn x Ga1- x O Seed Layers

    NASA Astrophysics Data System (ADS)

    Shkurmanov, Alexander; Sturm, Chris; Franke, Helena; Lenzner, Jörg; Grundmann, Marius

    2017-02-01

    ZnO nanowires (NWs) are used as building blocks for a wide range of different devices, e.g. light emitters, resonators, and sensors. Integration of the NWs into such structures requires a high level of NWs' diameter control. Here, we present that the doping concentration of Zn x Al1- x O and Zn x Ga1- x O seed layers has a strong impact on the NW growth and allows to tune the diameter of the NWs by two orders of magnitude down to less than 7 nm. These ultrathin NWs exhibit a well-oriented vertical growth and thus are promising for the investigation of quantum effects. The doping of the ZnO seed layers has also an impact on the deposition temperature which can be reduced down to T≈400∘C. This temperature is much smaller than those typically used for the fabrication of NWs by pulsed laser deposition. A comparison of the NWs indicates a stronger impact of the Ga doping on the NW growth than for the Al doping which we attribute to an impact of the size of the dopants. The optical properties of the NWs were investigated by cathodoluminescence spectroscopy which revealed a high crystalline quality. For the thin nanowires, the emission characteristic is mainly determined by the properties of the surface near region.

  14. Low-Temperature PLD-Growth of Ultrathin ZnO Nanowires by Using Zn x Al1-x O and Zn x Ga1-x O Seed Layers.

    PubMed

    Shkurmanov, Alexander; Sturm, Chris; Franke, Helena; Lenzner, Jörg; Grundmann, Marius

    2017-12-01

    ZnO nanowires (NWs) are used as building blocks for a wide range of different devices, e.g. light emitters, resonators, and sensors. Integration of the NWs into such structures requires a high level of NWs' diameter control. Here, we present that the doping concentration of Zn x Al1-x O and Zn x Ga1-x O seed layers has a strong impact on the NW growth and allows to tune the diameter of the NWs by two orders of magnitude down to less than 7 nm. These ultrathin NWs exhibit a well-oriented vertical growth and thus are promising for the investigation of quantum effects. The doping of the ZnO seed layers has also an impact on the deposition temperature which can be reduced down to T≈400(∘)C. This temperature is much smaller than those typically used for the fabrication of NWs by pulsed laser deposition. A comparison of the NWs indicates a stronger impact of the Ga doping on the NW growth than for the Al doping which we attribute to an impact of the size of the dopants. The optical properties of the NWs were investigated by cathodoluminescence spectroscopy which revealed a high crystalline quality. For the thin nanowires, the emission characteristic is mainly determined by the properties of the surface near region.

  15. Control of phonon transport by the formation of the Al2O3 interlayer in Al2O3-ZnO superlattice thin films and their in-plane thermoelectric energy generator performance.

    PubMed

    Park, No-Won; Ahn, Jay-Young; Park, Tae-Hyun; Lee, Jung-Hun; Lee, Won-Yong; Cho, Kwanghee; Yoon, Young-Gui; Choi, Chel-Jong; Park, Jin-Seong; Lee, Sang-Kwon

    2017-04-03

    Recently, significant progress has been made in increasing the figure-of-merit (ZT) of various nanostructured materials, including thin-film and quantum dot superlattice structures. Studies have focused on the size reduction and control of the surface or interface of nanostructured materials since these approaches enhance the thermopower and phonon scattering in quantum and superlattice structures. Currently, bismuth-tellurium-based semiconductor materials are widely employed for thermoelectric (TE) devices such as TE energy generators and coolers, in addition to other sensors, for use at temperatures under 400 K. However, new and promising TE materials with enhanced TE performance, including doped zinc oxide (ZnO) multilayer or superlattice thin films, are also required for designing solid-state TE power generating devices with the maximum output power density and for investigating the physics of in-plane TE generators. Herein, we report the growth of Al2O3/ZnO (AO/ZnO) superlattice thin films, which were prepared by atomic layer deposition (ALD), and the evaluation of their electrical and TE properties. All the in-plane TE properties, including the Seebeck coefficient (S), electrical conductivity (σ), and thermal conductivity (κ), of the AO/ZnO superlattice (with a 0.82 nm-thick AO layer) and AO/ZnO films (with a 0.13 nm-thick AO layer) were evaluated in the temperature range 40-300 K, and the measured S, σ, and κ were -62.4 and -17.5 μV K(-1), 113 and 847 (Ω cm)(-1), and 0.96 and 1.04 W m(-1) K(-1), respectively, at 300 K. Consequently, the in-plane TE ZT factor of AO/ZnO superlattice films was found to be ∼0.014, which is approximately two times more than that of AO/ZnO films (ZT of ∼0.007) at 300 K. Furthermore, the electrical power generation efficiency of the TE energy generator consisting of four couples of n-AO/ZnO superlattice films and p-Bi0.5Sb1.5Te3 (p-BST) thin-film legs on the substrate was demonstrated. Surprisingly, the output power of

  16. Magnetic nanoparticles formed in glasses co-doped with iron and larger radius elements

    SciTech Connect

    Edelman, I.; Ivanova, O.; Ivantsov, R.; Velikanov, D.; Zabluda, V.; Zubavichus, Y.; Veligzhanin, A.; Zaikovskiy, V.; Stepanov, S.; Artemenko, A.; Curely, J.; Kliava, J.

    2012-10-15

    A new type of nanoparticle-containing glasses based on borate glasses co-doped with low contents of iron and larger radius elements, Dy, Tb, Gd, Ho, Er, Y, and Bi, is studied. Heat treatment of these glasses results in formation of magnetic nanoparticles, radically changing their physical properties. Transmission electron microscopy and synchrotron radiation-based techniques: x-ray diffraction, extended x-ray absorption fine structure, x-ray absorption near-edge structure, and small-angle x-ray scattering, show a broad distribution of nanoparticle sizes with characteristics depending on the treatment regime; a crystalline structure of these nanoparticles is detected in heat treated samples. Magnetic circular dichroism (MCD) studies of samples subjected to heat treatment as well as of maghemite, magnetite, and iron garnet allow to unambiguously assign the nanoparticle structure to maghemite, independently of co-dopant nature and of heat treatment regime used. Different features observed in the MCD spectra are related to different electron transitions in Fe{sup 3+} ions gathered in the nanoparticles. The static magnetization in heat treated samples has non-linear dependence on the magnetizing field with hysteresis. Zero-field cooled magnetization curves show that at higher temperatures the nanoparticles occur in superparamagnetic state with blocking temperatures above 100 K. Below ca. 20 K, a considerable contribution to both zero field-cooled and field-cooled magnetizations occurs from diluted paramagnetic ions. Variable-temperature electron magnetic resonance (EMR) studies unambiguously show that in as-prepared glasses paramagnetic ions are in diluted state and confirm the formation of magnetic nanoparticles already at earlier stages of heat treatment. Computer simulations of the EMR spectra corroborate the broad distribution of nanoparticle sizes found by 'direct' techniques as well as superparamagnetic nanoparticle behaviour demonstrated in the magnetization

  17. Novel tannin-based Si, P co-doped carbon for supercapacitor applications

    NASA Astrophysics Data System (ADS)

    Ramasahayam, Sunil Kumar; Nasini, Udaya B.; Shaikh, Ali U.; Viswanathan, Tito

    2015-02-01

    Increasing environmental pollution and population compounded by a decrease in the availability of non-renewable resources and fossil fuels has propelled the need for sustainable alternate energy storage technologies particularly in the last two decades. An attempt to meet this crisis was carried out by a unique, microwave-assisted method which has enabled the generation of a novel Si, P co-doped carbon (SiPDC) for supercapacitor applications. The microwave-assisted method is useful in developing SiPDC at a rapid and economical fashion that does not employ any inert or reducing gases, but is high yielding. Varying proportions of precursor materials were utilized to generate four SiPDCs (SiPDC-1, SiPDC-2, SiPDC-3 and SiPDC-4) with varying contents of dopants as evidenced by X-ray photoelectron spectroscopic (XPS) results. Surface area and pore size analysis revealed that SiPDC-2 has a surface area of 641.51 m2 g-1, abundant micropores, mesopores and macropores which are critical for electrical double layer capacitance (EDLC). Of all the SiPDCs, SiPDC-2 exhibited highest capacitance of 276 F g-1 in 1 M H2SO4 and 244 F g-1 in 6 M KOH at a scan rate of 5 mV s-1. Galvanostatic charge-discharge studies performed in 6 M KOH establish the high capacitance of SiPDC-2. SiPDC-2 also exhibited excellent electrochemical stability in 1 M H2SO4 and 6 M KOH.

  18. Effects of Co doping on the metamagnetic states of the ferromagnetic fcc Fe-Co alloy.

    PubMed

    Ortiz-Chi, Filiberto; Aguayo, Aarón; de Coss, Romeo

    2013-01-16

    The evolution of the metamagnetic states in the ferromagnetic face centered cubic (fcc) Fe(1-x)Co(x) alloy as a function of Co concentration has been studied by means of first-principles calculations. The ground state properties were obtained using the full-potential linear augmented plane wave method and the generalized gradient approximation for the exchange-correlation functional. The alloying was modeled using the virtual crystal approximation and the magnetic states were obtained from the calculations of the total energy as a function of the spin moment, using the fixed spin moment method. For ferromagnetic fcc Fe, the binding-energy curve shows metamagnetic behavior, with two minima corresponding to a small-volume, low-spin (LS) state and a large-volume, high-spin (HS) state, which are separated by a small energy (E(LS) ≲ E(HS)). The evolution of the magnetic moment, the exchange integral (J), and the binding-energy curve is analyzed in the whole range of Co concentrations (x). The magnetic moment corresponding to the HS state decreases monotonically from 2.6 μ(B)/atom in fcc Fe to 1.7 μ(B)/atom in fcc Co. In contrast, the exchange integral for the HS state shows a maximum at around x = 0.45. The thermal dependence of the lattice parameter is evaluated with a method based on statistical mechanics using the binding-energy curve as an effective potential. It is observed that the behavior of the lattice parameter with temperature is tuned by Co doping, from negative thermal expansion in fcc Fe to positive thermal expansion in fcc Co, through the modification of the energetics of the metamagnetic states.

  19. Synergistic effects of carboxymethyl cellulose and ZnO as alkaline electrolyte additives for aluminium anodes with a view towards Al-air batteries

    NASA Astrophysics Data System (ADS)

    Liu, Jie; Wang, Dapeng; Zhang, Daquan; Gao, Lixin; Lin, Tong

    2016-12-01

    The synergistic effects of carboxymethyl cellulose (CMC) and zinc oxide (ZnO) have been investigated as alkaline electrolyte additives for the AA5052 aluminium alloy anode in aluminium-air battery by the hydrogen evolution test, the electrochemical measurements and the surface analysis method. The combination of CMC and ZnO effectively retards the self-corrosion of AA5052 alloy in 4 M NaOH solution. A complex film is formed via the interaction between CMC and Zn2+ ions on the alloy surface. The carboxyl groups adsorbed on the surface of aluminium make the protective film more stable. The cathodic reaction process is mainly suppressed significantly. AA5052 alloy electrode has a good discharge performance in the applied electrolyte containing the composite CMC/ZnO additives.

  20. K and Mn co-doped BaCd{sub 2}As{sub 2}: A hexagonal structured bulk diluted magnetic semiconductor with large magnetoresistance

    SciTech Connect

    Yang, Xiaojun; Zhang, Pan; Jiang, Hao; Luo, Yongkang; Chen, Qian; Feng, Chunmu; Tao, Qian; Cao, Guanghan; Xu, Zhu-An; Li, Yuke; Cao, Chao; Dai, Jianhui

    2013-12-14

    A bulk diluted magnetic semiconductor was found in the K and Mn co-doped BaCd{sub 2}As{sub 2} system. Different from recently reported tetragonal ThCr{sub 2}Si{sub 2}-structured II-II-V based (Ba,K)(Zn,Mn){sub 2}As{sub 2}, the Ba{sub 1−y}K{sub y}Cd{sub 2−x}Mn{sub x}As{sub 2} system has a hexagonal CaAl{sub 2}Si{sub 2}-type structure with the Cd{sub 2}As{sub 2} layer forming a honeycomb-like network. The Mn concentration reaches up to x ∼ 0.4. Magnetization measurements show that the samples undergo ferromagnetic transitions with Curie temperature up to 16 K. With low coercive field of less than 10 Oe and large magnetoresistance of about −70%, the hexagonal structured Ba{sub 1−y}K{sub y}Cd{sub 2−x}Mn{sub x}As{sub 2} can be served as a promising candidate for spin manipulations.

  1. Spatial atomic layer deposition on flexible porous substrates: ZnO on anodic aluminum oxide films and Al{sub 2}O{sub 3} on Li ion battery electrodes

    SciTech Connect

    Sharma, Kashish; Routkevitch, Dmitri; Varaksa, Natalia; George, Steven M.

    2016-01-15

    Spatial atomic layer deposition (S-ALD) was examined on flexible porous substrates utilizing a rotating cylinder reactor to perform the S-ALD. S-ALD was first explored on flexible polyethylene terephthalate polymer substrates to obtain S-ALD growth rates on flat surfaces. ZnO ALD with diethylzinc and ozone as the reactants at 50 °C was the model S-ALD system. ZnO S-ALD was then performed on nanoporous flexible anodic aluminum oxide (AAO) films. ZnO S-ALD in porous substrates depends on the pore diameter, pore aspect ratio, and reactant exposure time that define the gas transport. To evaluate these parameters, the Zn coverage profiles in the pores of the AAO films were measured using energy dispersive spectroscopy (EDS). EDS measurements were conducted for different reaction conditions and AAO pore geometries. Substrate speeds and reactant pulse durations were defined by rotating cylinder rates of 10, 100, and 200 revolutions per minute (RPM). AAO pore diameters of 10, 25, 50, and 100 nm were utilized with a pore length of 25 μm. Uniform Zn coverage profiles were obtained at 10 RPM and pore diameters of 100 nm. The Zn coverage was less uniform at higher RPM values and smaller pore diameters. These results indicate that S-ALD into porous substrates is feasible under certain reaction conditions. S-ALD was then performed on porous Li ion battery electrodes to test S-ALD on a technologically important porous substrate. Li{sub 0.20}Mn{sub 0.54}Ni{sub 0.13}Co{sub 0.13}O{sub 2} electrodes on flexible metal foil were coated with Al{sub 2}O{sub 3} using 2–5 Al{sub 2}O{sub 3} ALD cycles. The Al{sub 2}O{sub 3} ALD was performed in the S-ALD reactor at a rotating cylinder rate of 10 RPM using trimethylaluminum and ozone as the reactants at 50 °C. The capacity of the electrodes was then tested versus number of charge–discharge cycles. These measurements revealed that the Al{sub 2}O{sub 3} S-ALD coating on the electrodes enhanced the capacity stability. This S

  2. Solvothermal syntheses of Bi and Zn co-doped TiO2 with enhanced electron-hole separation and efficient photodegradation of gaseous toluene under visible-light.

    PubMed

    Li, Juan-Juan; Cai, Song-Cai; Xu, Zhen; Chen, Xi; Chen, Jin; Jia, Hong-Peng; Chen, Jing

    2017-03-05

    This study investigated the effects of Bi doped and Bi-Zn co-doped TiO2 on photodegradation of gaseous toluene. The doped TiO2 with various concentration of metal was prepared using the solvothermal route and characterized by SEM, XRD, Raman, BET, DRS, XPS, PL and EPR. Their photocatalytic activities under visible-light irradiation were drastically influenced by the dopant content. The results showed that moderate metal doping levels were obviously beneficial for the toluene degradation, while high doping levels suppressed the photocatalytic activity. The photocatalytic degradation of toluene over TiBi1.9%O2 and TiBi1.9%Zn1%O2 can reach to 51% and 93%, respectively, which are much higher than 25% of TiO2. Bi doping into TiO2 lattice generates new intermediate energy level of Bi below the CB edge of TiO2. The electron excitation from the VB to Bi orbitals results in the decreased band gap, extended absorption of visible-light and thus enhances its photocatalytic efficiency. Zn doping not only further enhances the absorption in this visible-light region, but also Zn dopant exists as the form of ZnO crystallites located on the interfaces of TiO2 agglomerates and acts as a mediator of interfacial charge transfer to suppress the electron-hole recombination. These synergistic effects are responsible for the enhanced photocatalytic performance.

  3. Rutile-type Co doped SnO2 diluted magnetic semiconductor nanoparticles: Structural, dielectric and ferromagnetic behavior

    NASA Astrophysics Data System (ADS)

    Mehraj, Sumaira; Shahnawaze Ansari, M.; Alimuddin

    2013-12-01

    Nanoparticles of basic composition Sn1-xCoxO2 (x=0.00, 0.01, 0.03, 0.05 and 0.1) were synthesized through the citrate-gel method and were characterized for structural properties using X-ray diffraction (XRD), Scanning electron microscopy (SEM), Energy dispersive X-ray spectroscopy (EDS) and Fourier transform infrared spectroscopy (FT-IR). XRD analysis of the powder samples sintered at 500 °C for 12 h showed single phase rutile type tetragonal structure and the crystallite size decreased as the cobalt content was increased. FT-IR spectrum displayed various bands that came due to fundamental overtones and combination of O-H, Sn-O and Sn-O-Sn entities. The effect of Co doping on the electrical and magnetic properties was studied using dielectric spectroscopy and vibrating sample magnetometer (VSM) at room temperature. The dielectric parameters (ε, tan δ and σac) show their maximum value for 10% Co doping. The dielectric loss shows anomalous behavior with frequency where it exhibits the Debye relaxation. The variation of dielectric properties and ac conductivity with frequency reveals that the dispersion is due to the Maxwell-Wagner type of interfacial polarization in general and hopping of charge between Sn2+ and Sn4+ as well as between Co2+ and Co3+ ions. The complex impedance analysis was used to separate the grain and grain boundary contributions in the system which shows that the conduction process in grown nanoparticles takes place predominantly through grain boundary volume. Hysteresis loops were observed clearly in M-H curves from 0.01 to 0.1% Co doped SnO2 samples. The saturation magnetization of the doped samples increased slightly with increase of Co concentration. However pure SnO2 displayed paramagnetism which vanished at higher values of magnetic field.

  4. Preparation and characterization of visible-light-driven TiO2 photocatalyst Co-doped with nitrogen and erbium.

    PubMed

    Chen, Guihua; Wang, Yong; Zhang, Juihui; Wu, Chenglin; Liang, Huading; Yang, Hui

    2012-05-01

    A series of nitrogen and erbium co-doped TiO2 photocatalyst was prepared by sol-hydrothermal method. The structure and properties of the photocatalyst were characterized by X-ray diffraction (XRD), Brunauer-Emmett-Teller (BET) method, X-ray photoelectron spectroscopy (XPS), and UV-vis diffuse reflectance spectra (DRS). The XRD and BET results showed that co-doping inhibited the increase of crystallite size and enlarged specific surface areas. XPS spectroscopy indicated nitrogen atoms were incorporated into TiO2 lattice, and erbium atoms mostly existed in the forms of Er2O3. A shift of the absorption edge to the lower energy and four absorption bands located at 654, 544, 524 and 489 nm attributed to the 4f transitions of 4I15/2 --> 4F2/9, 4I15/2 --> 4S3/2, 4I15/2 --> 2H11/2, 4I15/2 --> 4F7/2 of Er3+ were observed using DRS spectroscopy. The catalytic efficency was evaluated by the photocatalytic degradation of methyl orange (MO) under visible light irradiation. The results showed that the photocatalytic performance of the co-doped TiO2 was related with the hydrothermal temperature and the molar ratio of N/Ti, and they showed higher acitivites than pure TiO2. Results determined by fluorescence technique revealed that irradiation (lambda > 400 nm) of TiO2 photocatalyst dispersed in MO solution induces the generation of the highly active hydroxyl radicals (OH). It indicated the photocatalytic activities of TiO2 photocatalyst were correlation with the formation rate of hydroxyl radicals (OH) and other active oxygen species.

  5. Synthesis and properties of ZnTe and Eu3+ ion co-doped glass nanocomposites

    NASA Astrophysics Data System (ADS)

    Rahaman Molla, Atiar; Tarafder, Anal; Dey, Chirantan; Karmakar, Basudeb

    2014-10-01

    In this study, ZnTe (II-VI) semiconductor and Eu+3-ion co-doped borosilicate glass has been prepared in the SiO2-K2O-CaO-BaO-B2O3 glass system followed by controlled heat-treatment to produce glass nanocomposites. Glass transition temperature and crystallization peak temperature have been evaluated using DSC analysis. Dilatometric studies were carried out to evaluate thermal expansion co-efficient, glass transition temperature, and dilatometric softening temperature and found to be 10.7 × 10-6/K, 580° C and 628° C, respectively. TEM micrographs demonstrate formation of nano sized crystallites of less than 50 nm. The ZnTe crystal formation also established through selected area electron diffraction (SAED) analysis and high resolution images obtained through TEM studies. With increasing heat treatment time, optical transmission cut-off wavelength (λcut-off) shifted towards higher wavelength. Excitation spectra were recorded by monitoring emission at 613 nm corresponding to the 5D0 → 7F2 transition. An intense 394 nm excitation band corresponding to the 7F0 → 5L6 transition was observed. Emission spectra were then recorded by exciting the glass samples at 394 nm. When the glass is heat-treated for 30 min at 610° C, a 6-fold increase in the intensity of the red emission at 612 nm has been observed, which is attributed to the segregation of Eu3+ ions into the low phonon energy ZnTe crystallites and as the size of the nanocrystals is smaller than the size of the exciton, quantum confinement effect is visible. Further increase in heat-treatment duration led to decrease in luminescence intensity due to the growth of larger size crystals. 5D1 → 7F0 transition is visible only in the samples heat-treated for 30 min and 1 h, which is a characteristic of presence of Eu3+ ions in the low phonon energy ZnTe crystal sites. The micro hardness of the precursor glass and glass nanocomposites was evaluated; base glass shows hardness of 6.7 GPa and hardness of heat

  6. Investigation of the stability of Co-doped apatite ionic conductors in NH{sub 3}

    SciTech Connect

    Headspith, D.A.; Orera, A.; Young, N.A.; Francesconi, M.G.

    2010-12-15

    Hydrogen powered solid oxide fuel cells (SOFCs) are of enormous interest as devices for the efficient and clean production of electrical energy. However, a number of problems linked to hydrogen production, storage and transportation are slowing down the larger scale use of SOFCs. Identifying alternative fuel sources to act as intermediate during the transition to the full use of hydrogen is, therefore, of importance. One excellent alternative is ammonia, which is produced on a large scale, is relatively cheap and has the infrastructure for storage and transportation already in place. However, considering that SOFCs operate at temperatures higher than 500 {sup o}C, a potential problem is the interaction of gaseous ammonia with the materials in the cathode, anode and solid electrolyte. In this paper, we extend earlier work on high temperature reactions of apatite electrolytes with NH{sub 3} to the transition metal (Co) doped systems, La{sub 9.67}Si{sub 5}CoO{sub 26} and La{sub 10}(Si/Ge){sub 5}CoO{sub 26.5}. A combination of PXRD, TGA and XAFS spectroscopy data showed a better structural stability for the silicate systems. Apatite silicates and germanates not containing transition metals tend to substitute nitride anions for their interstitial oxide anions, when reacted with NH{sub 3} at high temperature and, consequentially, lower the interstitial oxide content. In La{sub 9.67}Si{sub 5}CoO{sub 26} and La{sub 10}(Si/Ge){sub 5}CoO{sub 26.5} reduction of Co occurs as a competing process, favouring lower levels of nitride-oxide substitution. -- Graphical Abstract: In reactions between the apatites La{sub 9.67}Si{sub 5}CoO{sub 26} and La{sub 10}(Si/Ge){sub 5}CoO{sub 26.5} and NH{sub 3} (g) at temperatures T>500 {sup o}C, the partial substitution of the Si and Ge by Co seems to discourage O{sup 2-}/N{sup 3-} substitution in favour of the reduction of the metal. Display Omitted

  7. TiO2 nanoparticles co-doped with silver and nitrogen for antibacterial application.

    PubMed

    Yuan, Yali; Ding, Jianqiang; Xu, Jinsheng; Deng, Jian; Guo, Jianbo

    2010-08-01

    We have prepared a series of TiO2 nanoparticles for antibacterial applications. These TiO2 nanoparticles were prepared by the hydrolysis precipitation method with Ti(OBu)4, silver nitrate and ammonia. Crystal structure, particle size, interfacial structure and UV-visible light response of the prepared nanoparticles were characterized by X-ray diffraction measurements (XRD), Transmission electron microscopy (TEM), Fourier-transform infrared spectroscopy (FTIR) and UV-Vis diffuse reflectance spectroscopy (UV-Vis-DRs). The XRD spectra showed that all samples were anatase structure calcined at 450 degrees C for 3 hours. The Ag doping made the peak of diffraction wider. The results of TEM showed that the nanoparticles of TiO2, N-TiO2 and 1% Ag-N-TiO2 were all spherical in shape and well distributed with a mean size of 19.8 nm, 39.2 nm and 20.7 nm, respectively. N doping caused the nanoparticle size to increase, while, when the doped amount of Ag+ increased, the TiO2 particle size decreased. The FTIR revealed that Ag and N doping of TiO2 appeared to have strong absorption by -OH group and showed the characteristic absorption band of NH4+ and Ag. The UV-Vis-DRs indicated that the absorption band of Ag-N co-doped TiO2 had red shift and that the optical absorption response (between 400 nm and 700 nm) had obvious enhancement. The antibacterial properties of nanoparticles were investigated by agar diffusion method toward Escherichia coli and Bacillus subtilis. The results indicated that both Ag- and N-doped TiO2 could increase the antibacterial properties of TiO2 nanoparticles under fluorescent light irradiation. A 1% Ag-N-TiO2 had the highest antibacterial activity with a clear antibacterial circle of 33.0 mm toward Escherichia coli and 22.8 mm toward Bacillus subtilis after cultivation for 24 hours.

  8. Observation of bias-dependent low field positive magneto-resistance in Co-doped amorphous carbon films

    NASA Astrophysics Data System (ADS)

    Hsu, H. S.; Chung, P. Y.; Zhang, J. H.; Sun, S. J.; Chou, H.; Su, H. C.; Lee, C. H.; Chen, J.; Huang, J. C. A.

    2010-07-01

    We report a considerable intrinsic positive magnetoresistance (PMR) effect in Co-doped amorphous carbon films by radio frequency magnetron sputtering. The kind of PMR effect is bias dependence and its ratio reaches a peak at a particular voltage. At room temperature, the maximum PMR ratio is about 10% among these samples. The x-ray absorption spectroscopy and Raman spectra results support the appearance of the bias-dependent PMR effect strongly depends on the sp2 states and Co dopants. A phenomenological model related to orbital Zeeman splitting has been proposed to describe the resistance, which is controlled by voltage and magnetic field.

  9. Abnormal phase transition and magnetic properties in Cu, Fe co-doped In2O3 nanocrystals

    NASA Astrophysics Data System (ADS)

    Chu, Dewei; Zeng, Yu-Ping; Jiang, Dongliang

    2008-05-01

    Fe, Cu co-doped In2O3 nanocrystals were synthesized by a coprecipitation method. Phase analyses revealed that Fe ions have high solubility (up to 15.4at.%) in the In2O3 matrix, while the Cu ions strongly restrain In2O3 phase transition from cubic to hexagonal. Raman spectroscopy shows that by adding Cu ions, the defect concentration increases. The samples show no evidence of ferromagnetism by additional Cu doping, indicating that Cu content might be a key point to realize room temperature ferromagnetism in Fe doped In2O3.

  10. Nitrogen and phosphorus co-doped graphene quantum dots: synthesis from adenosine triphosphate, optical properties, and cellular imaging.

    PubMed

    Ananthanarayanan, Arundithi; Wang, Yue; Routh, Parimal; Sk, Mahasin Alam; Than, Aung; Lin, Ming; Zhang, Jie; Chen, Jie; Sun, Handong; Chen, Peng

    2015-05-07

    Graphene quantum dots (GQDs) are emerging zero-dimensional materials promising a wide spectrum of applications, particularly, as superior fluorescent reporters for bio-imaging and optical sensing. Heteroatom doping can endow GQDs with new or improved photoluminescence properties. Here, we demonstrate a simple strategy for the synthesis of nitrogen and phosphorus co-doped GQDs from a single biomolecule precursor (adenosine triphosphate - ATP). Such ATP-GQDs exhibit high fluorescence quantum yield, strong two-photon upconversion, small molecular weight, high photostability, and good biocompatibility. Furthermore, transferrin conjugated ATP-GQDs have been used for imaging and real-time tracking of transferrin receptors in live cells.

  11. Photocatalytic performance of nitrogen, osmium co-doped TiO2 for removal of eosin yellow in water under simulated solar radiation.

    PubMed

    Kuvarega, Alex T; Krause, Rui W M; Mamba, Bhekie B

    2013-07-01

    Nitrogen, osmium co-doped TiO2 photocatalysts were prepared by a modified sol-gel method using ammonia as the nitrogen source and osmium tetroxide as the source of osmium. The role of rutile phase OsO2 in enhancing the photocatalytic activity of rutile TiO2 towards the degradation of Eosin Yellow was investigated. The materials were characterised by various techniques that include FTIR, Raman, XRD, SEM, EDS, TEM, TGA and DRUV-Vis. The amorphous, oven dried sample was transformed to the anatase and then the rutile phase with increasing calcination temperature. DRUV-Vis analysis revealed a red shift in absorption with increasing calcination temperature, confirmed by a decrease in the band gap of the material. The photocatalytic activity of N, Os co-doped TiO2 was evaluated using eosin yellow degradation and activity increased with increase in calcination temperature under simulated solar irradiation. The rutile phase of the co-doped TiO2 was found to be more effective in degrading the dye (k(a) = 1.84 x 10(-2) min(-1)) compared to the anatase co-doped phase (k(a) = 9.90 x 10(-3) min(-1)). The enhanced photocatalytic activity was ascribed to the synergistic effects of rutile TiO2 and rutile OsO2 in the N, Os co-doped TiO2.

  12. Efficient visible upconversion luminescence in Er3+ and Er3+/Yb3+ co-doped Y2O3 phosphors obtained by solution combustion reaction.

    PubMed

    Singh, Vijay; Haritha, P; Venkatramu, V; Kim, S H

    2014-05-21

    Combustion derived Er(3+) -doped Y2O3 and Er(3+)/Yb(3+)co-doped Y2O3 powders have been characterized by X-ray diffraction, energy dispersive X-ray analysis, Fourier transform infrared spectroscopy and laser excited spectroscopy. Formation of Y2O3 phosphor was confirmed by X-ray diffraction and energy dispersive X-ray analysis. The vibrational properties of Y2O3 powder was studied by Fourier transform infrared spectroscopy. The luminescence spectra of Er(3+) -doped and Er(3+)/Yb(3+) co-doped Y2O3 powders were studied under 379nm excitation. The strong up-conversion luminescence for Er(3+) -doped and Er(3+)/Yb(3+) co-doped Y2O3 powders have been observed under 978nm laser excitation. The effect of Yb(3+) addition on optical and luminescence properties of Er(3+):Y2O3 powders were studied. The ratio of red to green intensity has been enhanced when Er(3+) -doped Y2O3 is co-doped with Yb(3+) ions. The effect of co-doping of Yb(3+) ions on the visible luminescence intensity of Er(3+) has been studied and the mechanism responsible for the variation in the green and red intensity is discussed.

  13. Magneto-optical spectrum and the effective excitonic Zeeman splitting energies of Mn and Co-doped CdSe nanowires

    SciTech Connect

    Xiong, Wen; Chen, Wensuo

    2013-12-21

    The electronic structure of Mn and Co-doped CdSe nanowires are calculated based on the six-band k·p effective-mass theory. Through the calculation, it is found that the splitting energies of the degenerate hole states in Mn-doped CdSe nanowires are larger than that in Co-doped CdSe nanowires when the concentration of these two kinds of magnetic ions is the same. In order to analysis the magneto-optical spectrum of Mn and Co-doped CdSe nanowires, the four lowest electron states and the four highest hole states are sorted when the magnetic field is applied, and the 10 lowest optical transitions between the conduction subbands and the valence subbands at the Γ point in Mn and Co-doped CdSe nanowires are shown in the paper, it is found that the order of the optical transitions at the Γ point almost do not change although two different kinds of magnetic ions are doped in CdSe nanowires. Finally, the effective excitonic Zeeman splitting energies at the Γ point are found to increase almost linearly with the increase of the concentration of the magnetic ions and the magnetic field; meanwhile, the giant positive effective excitonic g factors in Mn and Co-doped CdSe nanowires are predicted based on our theoretical calculation.

  14. Realizing ferromagnetic ordering in SnO2 and ZnO nanostructures with Fe, Co, Ce ions.

    PubMed

    Verma, Kuldeep Chand; Kotnala, R K

    2016-07-14

    We report the defects/vacancies that attribute to room temperature ferromagnetism in SnO2 in contrast to ZnO [Phys. Chem. Chem. Phys., 2016, 18, 5647], which has observed ferromagnetic ordering below room temperature, since both the systems involve similar dopant Fe, Co, and Ce ions. The Fe, Co, Ce doped SnO2 nanostructures were synthesized by a sol-gel process. The Rietveld refinement of the X-ray diffraction data detects a rutile SnO2 structure, with structural defects due to the deformation of the unit cell with doping. The pure, Fe and Co doped SnO2 have nanoparticle formation that is induced to nanorods with Ce co-doping. However, ZnO retained a nanorod-type shape with Fe and Co ions and changed to nanoparticles with Ce co-doping. The rutile SnO2 structure and defect formation with Fe, Co, and Ce ions is also confirmed with Raman vibrational modes. The observed lattice defects due to oxygen vacancies are shown by the photoluminescence study. The weak room temperature ferromagnetism is observed with Fe and Co ions in SnO2, which is enhanced with Ce ions. The zero field (ZFC) and field cooling magnetic measurements indicate an improvement in magnetization with a cusp in the ZFC curve at low temperature, observed due to an antiferromagnetic transition. It also induced variations in the magnetic coercive field due to the phenomenon of superparamagnetism, spin glasses, and magnetic clustered growth. This can be further confirmed with ac magnetic susceptibility measurements that show magnetic transitions as well as frequency dispersive and dependent behaviors of χ'(T)/χ''(T). However, the Fe, Co, Ce doped ZnO exhibit paramagnetic behavior at room temperature due to favorable antiferromagnetic interactions and have a ferromagnetic transition at low temperature with little ferromagnetic cluster growth.

  15. Enhanced light extraction of GaN-based light-emitting diodes with periodic textured SiO2 on Al-doped ZnO transparent conductive layer

    NASA Astrophysics Data System (ADS)

    Yu, Zhao; Bingfeng, Fan; Yiting, Chen; Yi, Zhuo; Zhoujun, Pang; Zhen, Liu; Gang, Wang

    2016-07-01

    We report an effective enhancement in light extraction of GaN-based light-emitting diodes (LEDs) with an Al-doped ZnO (AZO) transparent conductive layer by incorporating a top regular textured SiO2 layer. The 2 inch transparent through-pore anodic aluminum oxide (AAO) membrane was fabricated and used as the etching mask. The periodic pore with a pitch of about 410 nm was successfully transferred to the surface of the SiO2 layer without any etching damages to the AZO layer and the electrodes. The light output power was enhanced by 19% at 20 mA and 56% at 100 mA compared to that of the planar LEDs without a patterned surface. This approach offers a technique to fabricate a low-cost and large-area regular pattern on the LED chip for achieving enhanced light extraction without an obvious increase of the forward voltage. ).

  16. CROSS-DISCIPLINARY PHYSICS AND RELATED AREAS OF SCIENCE AND TECHNOLOGY: Effect of Annealing Conditions on Properties of Sol-Gel Derived Al-Doped ZnO Thin Films

    NASA Astrophysics Data System (ADS)

    Gao, Mei-Zhen; Zhang, Feng; Liu, Jing; Sun, Hui-Na

    2009-08-01

    Transparent conductive Al-doped ZnO (AZO) thin films are prepared on normal glass substrates by the sol-gel spin coating method. The effects of drying conditions, annealing temperature and cooling rate on the structural, electrical and optical properties of AZO films are investigated by x-ray diffraction, scanning electron microscopy, the four-point probe method and UV-VIS spectrophotometry, respectively. The deposited films show a hexagonal wurtzite structure and high preferential c-axis orientation. As the drying temperature increases from 100°C to 300°C the resistivity of AZO films decreases dramatically. In contrast to the annealed films cooled in a furnace and in air, the resistivity of the annealed film which is cooled at -15°C is greatly reduced. Increasing the cooling rate dramatically increases the electrical conductivity of AZO films.

  17. On the Luminescence Enhancement of Mn2+ By Co-doping of Eu2+ in ZnS:Mn,Eu

    SciTech Connect

    Hossu, Marius; Schaeffer, Roger O.; Ma, Lun; Chen, Wei; Zhu, Yongbin; Sammynaiken, Ramaswami; Joly, Alan G.

    2013-06-01

    The photoluminescence and X-ray luminescence of ZnS:Mn, ZnS:Mn,Eu and ZnS:Eu were investigated and it was found that the luminescence intensity of Mn2+ in ZnS:Mn,Eu co-doped phosphors is highly dependent on the doping concentration of Eu2+. At the optimized Eu2+concentration (0.2%), the photoluminescence of Mn2+ shows about a 5.5 times enhancement and its X-ray luminescence is enhanced by a factor of 2.5. Both wurtzite and zinc blend phases are present in the samples with wurtzite phase dominant. Co-doping of Eu2+ into ZnS:Mn does not change appreciably the ratio of the two phases or the Mn2+ emission luminescence lifetime; however, the doping of Eu2+ into ZnS:Mn does change the phonon activity. Furthermore, it was found that the defect-related blue emission of ZnS:Eu overlaps with the excitation bands of Mn2+ in ZnS:Mn and there is likely energy transfer from these defect states to Mn2+ in ZnS:Mn,Eu. This energy transfer and the phonon modification are considered to be the two main reasons for the luminescence enhancement and the intensity dependence of Mn2+ emission on Eu2+ doping concentration in ZnS:Mn,Eu.

  18. Nitrogen and carbon co-doped Ni-TiO2 spindles for high performance electrochemical capacitor electrodes

    NASA Astrophysics Data System (ADS)

    Liu, Yu; Cai, Xiaoyu; Jiang, Jinhui; Yan, Ming; Shi, Weidong

    2017-02-01

    Nitrogen and carbon co-doped Ni-TiO2 (nickel-titanium dioxide) spindles with hollow inner and good structural stability were facilely prepared by a direct precipitation method followed by annealing treatment. The unique composite shows a remarkably high capacitivity (223.7 F g-1 at 2 mV/s) and good rate capability (132.2 F g-1 at 100 mV s-1) when used as supercapacitor electrodes. In addition, the nitrogen and carbon co-doped Ni-TiO2 spindles also demonstrate good cycling stability (91.5% retention of the initial capacitance after 4000 cycles). The unique structure and seamlessly integration between different components generate synergistic effect to boost high performance and high electrical conductivity. The hollow inner also allows efficient diffusion of electrolyte and provides a more favorable path for charge penetration and transportation, which makes the good rate capability. The attractive performances make them potentially promising alternatives for the electrode materials of future energy storage devices.

  19. High-power graphene mode-locked Tm/Ho co-doped fiber laser with evanescent field interaction.

    PubMed

    Li, Xiaohui; Yu, Xuechao; Sun, Zhipei; Yan, Zhiyu; Sun, Biao; Cheng, Yuanbing; Yu, Xia; Zhang, Ying; Wang, Qi Jie

    2015-11-16

    Mid-infrared ultrafast fiber lasers are valuable for various applications, including chemical and biomedical sensing, material processing and military applications. Here, we report all-fiber high-power graphene mode-locked Tm/Ho co-doped fiber laser at long wavelength with evanescent field interaction. Ultrafast pulses up to 7.8 MHz are generated at a center wavelength of 1879.4 nm, with a pulse width of 4.7 ps. A graphene absorber integrated with a side-polished fiber can increase the damage threshold significantly. Harmonics mode-locking can be obtained till to the 21(th) harmonics at a pump power of above 500 mW. By using one stage amplifier in the anomalous dispersion regime, the laser can be amplified up to 450 mW and the narrowest pulse duration of 1.4 ps can be obtained simultaneously. Our work paves the way to graphene Tm/Ho co-doped mode-locked all-fiber master oscillator power amplifiers as potentially efficient and economic laser sources for high-power laser applications, such as special material processing and nonlinear optical studies.

  20. The origin of ferromagnetism of Co-doped TiO2 nanoparticles: Experiments and theory investigation

    NASA Astrophysics Data System (ADS)

    Zhang, Suyin; Zhou, Zhongpo; Xiong, Rui; Shi, Jing; Lu, Zhihong; Wang, Haiying

    2016-11-01

    A series of Ti1-xCoxO2-δ (x = 0.01, 0.03, 0.05, 0.07) nanoparticles were synthesized by sol-gel method. The X-ray diffraction, transmission electron microscopy, Raman analysis and X-ray photoelectron spectroscopy ruled out the signatures of Ti3+, Co-clusters or any other oxides of Co. The ferromagnetic behavior was clearly observed at room temperature in doped samples with saturation magnetization (Ms) of the order of 0.008-0.035 emu/g depending on doping concentrations. The saturation magnetization is found to be increased with the Co contents increasing from 1% to 7%. From the plot of the M-T curve, we obtain the Tc as ˜515 K for 5% Co-doped TiO2. Oxygen vacancies were detected from the photoluminescence (PL) measurement. Magnetic properties analyses and PL analyses showed that oxygen vacancies probably played a major role in ferromagnetism of the Ti1-xCoxO2 system with Co substituting for Ti. The first-principles calculation was performed to investigate the magnetic properties of Co-doped TiO2 nanoparticles. It can be found that the major magnetic moment is from the 3d electron of Co. The experiment results are consistent with the first-principles calculation. The ferromagnetism derived from the spin-split of O-2p and Co-3d electron states caused by p-d orbit hybridization.

  1. [Spectroscopic analysis of Er3+ in Er3+ /Yb3+ co-doped LiNbO3 crystal].

    PubMed

    Wang, Dun-Chun; Zhang, De-Long; Cui, Yu-Ming; Chen, Cai-He

    2005-12-01

    At room temperature, alpha-polarized absorption spectra of as-grown and annealed Er3+/Yb3+ co-doped, Z-cut LiNbO3 single crystals, grown by using Czochralski method, were measured in the wavelength range of 300-1 650 nm. The spectroscopic properties of Er3+ were analysed by using Judd-Ofelt theory. The experimental values of the electron transition strengths of several major transitions from the ground state to excited-state manifolds were evaluated from the measured integrated absorption coefficients of Er3+. The Judd-Ofelt parameters were determined by using least square method. According to the fitted Judd-Ofelt parameters, the spontaneous emission rates, the fluorescence branch ratios from the excited-state manifolds J to the lower-lying manifolds J', as well as the radiative lifetimes of the excited states were numerically calculated. In addition, Yb3+ co-doping and thermal anneal effects on the spectroscopic properties of Er3+ were also considered in this work.

  2. Study of energy transfer and spectral downshifting in Ce, RE (RE = Nd and Yb) co-doped lanthanum phosphate

    NASA Astrophysics Data System (ADS)

    Sawala, N. S.; Omanwar, S. K.

    2017-03-01

    The phosphors LaPO4 (Lanthanum phosphate) doped with Ce(III)/Ce3+ and co-doped with Ce3+-Nd3+ and Ce3+-Yb3+ were effectively synthesized by conventional solid state reaction method. The prepared samples were characterized by powder X-ray diffraction (XRD) and surface morphology was studied by scanning electronic microscope (SEM). The photoluminescence (PL) properties were studied by spectrophotometers in near infrared (NIR) and ultraviolet visible (UV-VIS) region. Additionally the luminescence time decay curves of samples were investigated to confirm energy transfer (ET) process. The Ce3+-Nd3+ ion co-doped LaPO4 phosphors can convert a photon of UV region (278 nm) into photons of NIR region (1058 nm). While Ce3+-Yb3+ ion doped LaPO4 phosphors convert photons of UV region (278 nm) into photons of NIR region (979 nm). The Ce3+ ion acts like sensitizer and Nd3+/Yb3+ ions act as activators. Both kinds of emissions are suitable for improving spectral response of solar cells.

  3. Growth and photorefractive properties of Mg, Fe co-doped near-stoichiometric lithium tantalate single crystals

    NASA Astrophysics Data System (ADS)

    Hsu, W. T.; Chen, Z. B.; You, C. A.; Huang, S. W.; Liu, J. P.; Lan, C. W.

    2010-07-01

    Mg, Fe co-doped near-stoichiometric lithium tantalate (SLT) crystals were successfully grown by the zone-leveling Czochralski (ZLCz) technique and the holographic properties were measured by the two-beam coupling method. The fundamental optical properties of crystals were measured by employing the UV-vis-NIR spectrometer and Fourier transformation infrared spectrophotometer as well. By the chemical analysis, the Li/Ta, Mg/Ta and Fe/Ta ratios of the crystals were obtained and the Li/Ta ratios of the crystals were all close to the theoretical limitation of 0.98. In the holographic properties, the recording time constant, erasing time constant, dynamic range, and sensitivity decreased with light intensity; but the maximum diffraction efficiency showed an opposite trend. Furthermore, the diffraction efficiency, dynamic range and sensitivity of the crystals were improved with a relatively higher Fe/Ta ratio. In comparison with Mn-LT crystals, the Mg, Fe co-doped SLT crystal showed the superior photorefractive properties indicating that it could be a promising new material for lifetime holographic data storage.

  4. Colour emission tunability in Ho3+-Tm3+-Yb3+ co-doped Y2O3 upconverted phosphor

    NASA Astrophysics Data System (ADS)

    Pandey, Anurag; Rai, Vineet Kumar

    2012-12-01

    The frequency upconversion (UC) emission throughout the visible region from the Y2O3:Ho3+-Tm3+-Yb3+ co-doped phosphors synthesized by using low temperature combustion process upon excitation with a diode laser operating at 980 nm have been presented. The colour emission tunability in co-doped phosphor has been observed on increasing the pump power and seen by the naked eyes. The tunability in colour emission has also been visualized by CIE chromaticity diagram. The variation in UC emission intensity of the 1G4 → 3H6 (Tm3+) and 5F3 → 5I8 (Ho3+) transitions lying in the blue region has been monitored with increase in the pump power and marked that their ratio can be used to determine the temperature. The developed phosphor has been used to record fingerprints. The observed most intense visible colour emission from the developed material may be used for photodynamic therapy and as an alternative of traditional fluorescent biolabels.

  5. High-power graphene mode-locked Tm/Ho co-doped fiber laser with evanescent field interaction

    PubMed Central

    Li, Xiaohui; Yu, Xuechao; Sun, Zhipei; Yan, Zhiyu; Sun, Biao; Cheng, Yuanbing; Yu, Xia; Zhang, Ying; Wang, Qi Jie

    2015-01-01

    Mid-infrared ultrafast fiber lasers are valuable for various applications, including chemical and biomedical sensing, material processing and military applications. Here, we report all-fiber high-power graphene mode-locked Tm/Ho co-doped fiber laser at long wavelength with evanescent field interaction. Ultrafast pulses up to 7.8 MHz are generated at a center wavelength of 1879.4 nm, with a pulse width of 4.7 ps. A graphene absorber integrated with a side-polished fiber can increase the damage threshold significantly. Harmonics mode-locking can be obtained till to the 21th harmonics at a pump power of above 500 mW. By using one stage amplifier in the anomalous dispersion regime, the laser can be amplified up to 450 mW and the narrowest pulse duration of 1.4 ps can be obtained simultaneously. Our work paves the way to graphene Tm/Ho co-doped mode-locked all-fiber master oscillator power amplifiers as potentially efficient and economic laser sources for high-power laser applications, such as special material processing and nonlinear optical studies. PMID:26567536

  6. Synergistic enhancement of nitrogen and sulfur co-doped graphene with carbon nanospheres insertion for electrocatalytic oxygen reduction reaction

    SciTech Connect

    Wu, Min; Xin, Huolin L.; Wang, Jie; Wu, Zexing; Wang, Deli

    2015-03-13

    A nitrogen and sulfur co-doped graphene/carbon black (NSGCB) nanocomposite for the oxygen reduction reaction (ORR) was synthesized through a one-pot annealing of a precursor mixture containing graphene oxide, thiourea, and acidized carbon black (CB). The NSGCB showed excellent performance for the ORR with the onset and half-way potentials at 0.96 V and 0.81 V (vs. RHE), respectively. It is significantly improved over that of the catalysts derived from only graphene (0.90 V and 0.76 V) or carbon nanosphere (0.82 V and 0.74 V). The enhanced catalytic activity on the NSGCB electrode could be attributed to the synergistic effect of N/S co-doping and the enlarged interlayer space resulted from the insertion of carbon nanosphere into the graphene sheets. The four-electron selectivity and the limiting current density of the NSGCB nanocomposite are comparable to that of the commercially Pt/C catalyst. Furthermore, the NSGCB nanocomposite was superior to Pt/C in terms of long-term durability and tolerance to methanol poisoning.

  7. Nitrogen and phosphorus co-doped graphene quantum dots: synthesis from adenosine triphosphate, optical properties, and cellular imaging

    NASA Astrophysics Data System (ADS)

    Ananthanarayanan, Arundithi; Wang, Yue; Routh, Parimal; Sk, Mahasin Alam; Than, Aung; Lin, Ming; Zhang, Jie; Chen, Jie; Sun, Handong; Chen, Peng

    2015-04-01

    Graphene quantum dots (GQDs) are emerging zero-dimensional materials promising a wide spectrum of applications, particularly, as superior fluorescent reporters for bio-imaging and optical sensing. Heteroatom doping can endow GQDs with new or improved photoluminescence properties. Here, we demonstrate a simple strategy for the synthesis of nitrogen and phosphorus co-doped GQDs from a single biomolecule precursor (adenosine triphosphate - ATP). Such ATP-GQDs exhibit high fluorescence quantum yield, strong two-photon upconversion, small molecular weight, high photostability, and good biocompatibility. Furthermore, transferrin conjugated ATP-GQDs have been used for imaging and real-time tracking of transferrin receptors in live cells.Graphene quantum dots (GQDs) are emerging zero-dimensional materials promising a wide spectrum of applications, particularly, as superior fluorescent reporters for bio-imaging and optical sensing. Heteroatom doping can endow GQDs with new or improved photoluminescence properties. Here, we demonstrate a simple strategy for the synthesis of nitrogen and phosphorus co-doped GQDs from a single biomolecule precursor (adenosine triphosphate - ATP). Such ATP-GQDs exhibit high fluorescence quantum yield, strong two-photon upconversion, small molecular weight, high photostability, and good biocompatibility. Furthermore, transferrin conjugated ATP-GQDs have been used for imaging and real-time tracking of transferrin receptors in live cells. Electronic supplementary information (ESI) available: Supplementary figures related to characterization, computational studies and protein conjugation. See DOI: 10.1039/c5nr01519g

  8. Synergistic enhancement of nitrogen and sulfur co-doped graphene with carbon nanospheres insertion for electrocatalytic oxygen reduction reaction

    DOE PAGES

    Wu, Min; Xin, Huolin L.; Wang, Jie; ...

    2015-03-13

    A nitrogen and sulfur co-doped graphene/carbon black (NSGCB) nanocomposite for the oxygen reduction reaction (ORR) was synthesized through a one-pot annealing of a precursor mixture containing graphene oxide, thiourea, and acidized carbon black (CB). The NSGCB showed excellent performance for the ORR with the onset and half-way potentials at 0.96 V and 0.81 V (vs. RHE), respectively. It is significantly improved over that of the catalysts derived from only graphene (0.90 V and 0.76 V) or carbon nanosphere (0.82 V and 0.74 V). The enhanced catalytic activity on the NSGCB electrode could be attributed to the synergistic effect of N/Smore » co-doping and the enlarged interlayer space resulted from the insertion of carbon nanosphere into the graphene sheets. The four-electron selectivity and the limiting current density of the NSGCB nanocomposite are comparable to that of the commercially Pt/C catalyst. Furthermore, the NSGCB nanocomposite was superior to Pt/C in terms of long-term durability and tolerance to methanol poisoning.« less

  9. Efficient 2 μm emission in Nd3+/Ho3+ co-doped silicate-germanate glass pumped by common 808 nm LD

    NASA Astrophysics Data System (ADS)

    Chen, Rong; Tian, Ying; Li, Bingpeng; Huang, Feifei; Wang, Caizhi; Jing, Xufeng; Zhang, Junjie; Xu, Shiqing

    2017-03-01

    Nd3+/Ho3+ co-doped silicate-germanate glass has been synthesized by high temperature melt-quenching method. Near infrared emission centered at 2 μm has been successfully obtained by incorporating Nd3+ and Ho3+ in present glass. The Judd-Ofelt intensity parameters Ωt (t=2, 4, 6), and radiative properties of Ho3+ were calculated and discussed by using the Judd-Ofelt theory. The energy transfer processes and luminescence properties of Nd3+/Ho3+ co-doped glasses were analyzed pumped by a conventional 808 nm laser diode. Desirable spectroscopic characteristics indicates that Nd3+/Ho3+ co-doped silicate-germanate glass might be a good alternative matrix for 2 μm band mid-infrared laser.

  10. Toward an ultra-broadband emission source based on the bismuth and erbium co-doped optical fiber and a single 830nm laser diode pump.

    PubMed

    Zhang, Jianzhong; Sathi, Zinat M; Luo, Yanhua; Canning, John; Peng, Gang-Ding

    2013-03-25

    We demonstrate a broadband optical emission from Bi/Er co-doped fiber and a single 830nm laser diode pump. The ultra-broadband mechanism is studied and discussed in details based on a combination of experimental measurements, including luminescence, differential luminescence and ESA, on fiber samples of different Bi and Er concentrations. The Er co-doping in Bi doped fiber is found to be effective for broadband emission, by enhancing not only luminescence at C and L bands but also that at O and shorter wavelength bands. The luminescence intensity between 1100 and 1570nm is over -45dBm/5nm in single mode fiber using a few meters of Bi/Er co-doped fiber and offers a modest ~40dB dynamic range and a broad bandwidth of ~470nm for an OSA based spectral measurement.

  11. Domain matched epitaxial growth of (111) Ba{sub 0.5}Sr{sub 0.5}TiO{sub 3} thin films on (0001) Al{sub 2}O{sub 3} with ZnO buffer layer

    SciTech Connect

    Krishnaprasad, P. S. E-mail: mkj@cusat.ac.in; Jayaraj, M. K. E-mail: mkj@cusat.ac.in; Antony, Aldrin; Rojas, Fredy

    2015-03-28

    Epitaxial (111) Ba{sub 0.5}Sr{sub 0.5}TiO{sub 3} (BST) thin films have been grown by pulsed laser deposition on (0001) Al{sub 2}O{sub 3} substrate with ZnO as buffer layer. The x-ray ω-2θ, Φ-scan and reciprocal space mapping indicate epitaxial nature of BST thin films. The domain matched epitaxial growth of BST thin films over ZnO buffer layer was confirmed using Fourier filtered high resolution transmission electron microscope images of the film-buffer interface. The incorporation of ZnO buffer layer effectively suppressed the lattice mismatch and promoted domain matched epitaxial growth of BST thin films. Coplanar inter digital capacitors fabricated on epitaxial (111) BST thin films show significantly improved tunable performance over polycrystalline thin films.

  12. Co-precipitation synthesis and characterization of Co doped SnO2 NPs, HSA interaction via various spectroscopic techniques and their antimicrobial and photocatalytic activities.

    PubMed

    Nasir, Zeba; Shakir, Mohammad; Wahab, Rizwan; Shoeb, Mohd; Alam, Parvez; Khan, Rizwan Hasan; Mobin, Mohammad; Lutfullah

    2017-01-01

    Sn1-xCoxO2 (x=0.00, 0.01, 0.03, 0.05) nanoparticles (NPs) of average size ∼30-40nm were synthesized by co-precipitation method. The interaction of Co doped SnO2 NPs with human serum albumin (HSA) and their photocatalytic and antimicrobial properties were studied. The structural analysis and morphology of Co doped SnO2 NPs were analysed via X-ray diffraction (XRD), scanning electron microscopy (SEM), energy dispersive X-ray spectroscopy (EDS), high resolution transmission electron microscopy (HRTEM) and Fourier transform infrared spectroscopy (FT-IR). Besides the structural and morphological analysis, the interaction of Co doped SnO2 NPs with HSA were studied by UV-vis, Circular dichroism (CD) and fluorescence spectroscopy. Fluorescence quenching results suggest that Co doped SnO2 NPs interact with an HSA molecule through static mechanism. CD indicates that α-helicity of HSA increases due to the interaction of Co doped SnO2 NPs. The photocatalytic activities of the NPs with increased doping concentration were evaluated through a degradation process in the presence of methylene-blue (MB) dye under UV light irradiation, which exhibited that the surface area of NPs with increased doping concentration plays a major role in improving the photocatalytic activity. The antimicrobial effect of undoped and Co-doped SnO2 NPs was determined using agar-well diffusion method and analyzed against gram-positive bacteria (Bacillus Cereus MC 2434). In our results, we have found that as the doping concentration increases into NPs, zone of inhibition increases, which could be ascribed to the production of ROS and large surface area of the NPs.

  13. Erbium and nitrogen co-doped SrTiO{sub 3} with highly visible light photocatalytic activity and stability by solvothermal synthesis

    SciTech Connect

    Xu, Jing; Wei, Yuelin; Huang, Yunfang; Wang, Jing; Zheng, Xuanqing; Sun, Zhixian; Wu, Ying; Tao, Xinling; Fan, Leqing; Wu, Jihuai

    2015-10-15

    Highlights: • Er/N co-doped SrTiO{sub 3} was prepared by a solvothermal process at low temperature. • The co-doping induces the band gap narrowing and prominent absorbance in visible light region. • The samples show excellent catalytic activity and stability under visible light irradiation. - Abstract: Erbium–nitrogen co-doped SrTiO{sub 3} photocatalysts have been synthesized by a facile solvothermal method. The resulting samples were analyzed by FE-SEM, XRD, BET-surface area and UV–vis. The UV–vis absorption spectra of these powders indicated that erbium–nitrogen co-doped SrTiO{sub 3} possessed stronger absorption bands in the visible light region in comparison with that of pure SrTiO{sub 3}. The occurrence of the erbium–nitrogen co-doped cubic SrTiO{sub 3} induced the higher photocatalytic activities for the degradation of methyl orange (MO) under irradiation by ultraviolet light and visible light, respectively, being superior to that of pure SrTiO{sub 3} and commercial TiO{sub 2} (P-25) powders. In addition, the Er–N co-doped SrTiO{sub 3} (initial molar ratios of Sr/Er/N = 1:0.015:0.1, designated as S5) sample showed the best photocatalytic activity with the degradation rate as high as 98% after 30 min under the visible light irradiation. After five cycles, the photocatalytic activity of the S5 catalyst showed no significant decrease, which indicated that the photocatalysts were stable under visible light irradiation.

  14. The effect of dopant concentration on properties of transparent conducting Al-doped ZnO thin films for efficient Cu2ZnSnS4 thin-film solar cells prepared by electrodeposition method

    NASA Astrophysics Data System (ADS)

    Mkawi, E. M.; Ibrahim, K.; Ali, M. K. M.; Farrukh, M. A.; Mohamed, A. S.

    2015-11-01

    Al-doped ZnO (AZO) thin films were potentiostatically deposited on indium tin oxide substrates. The influence of the doping level of the ZnO:Al films was investigated. The results of the X-ray diffraction and scanning electron microscopy analysis revealed that the structural properties of the AZO films were found polycrystalline with a hexagonal wurtzite-type structure along the (002) plane. The grain size of the AZO films was observed as approximately 3 μm in the film doping with 4 mol% ZnO:Al concentration. The thin films also exhibited an optical transmittance as high as 90 % in the wavelength range of 100-1,000 nm. The optical band gap increased from 3.33 to 3.45 eV. Based on the Hall studies, the lowest resistivity (4.78 × 10-3 Ω cm) was observed in the film doping with 3 mol% ZnO:Al concentration. The sheet resistant, carrier concentration and Hall mobility values were found as 10.78 Ω/ square, 9.03 × 1018 cm-3 and 22.01 cm2/v s, respectively, which showed improvements in the properties of AZO thin films. The ZnO:Al thin films were used as a buffer layer in thin-film solar cells with the structure of soda-lime glass/Mo/Cu2ZnSnS4/ZnS/ZnO/Al grid. The best solar cell efficiency was 2.3 % with V OC of 0.430 V, J SC of 8.24 mA cm-2 and FF of 68.1 %.

  15. Facile synthesis and enhanced visible light photocatalytic activity of N and Zr co-doped TiO2 nanostructures from nanotubular titanic acid precursors

    PubMed Central

    2013-01-01

    Zr/N co-doped TiO2 nanostructures were successfully synthesized using nanotubular titanic acid (NTA) as precursors by a facile wet chemical route and subsequent calcination. These Zr/N-doped TiO2 nanostructures made by NTA precursors show significantly enhanced visible light absorption and much higher photocatalytic performance than the Zr/N-doped P25 TiO2 nanoparticles. Impacts of Zr/N co-doping on the morphologies, optical properties, and photocatalytic activities of the NTA precursor-based TiO2 were thoroughly investigated. The origin of the enhanced visible light photocatalytic activity is discussed in detail. PMID:24369051

  16. Facile synthesis and enhanced visible light photocatalytic activity of N and Zr co-doped TiO2 nanostructures from nanotubular titanic acid precursors.

    PubMed

    Zhang, Min; Yu, Xinluan; Lu, Dandan; Yang, Jianjun

    2013-12-26

    Zr/N co-doped TiO2 nanostructures were successfully synthesized using nanotubular titanic acid (NTA) as precursors by a facile wet chemical route and subsequent calcination. These Zr/N-doped TiO2 nanostructures made by NTA precursors show significantly enhanced visible light absorption and much higher photocatalytic performance than the Zr/N-doped P25 TiO2 nanoparticles. Impacts of Zr/N co-doping on the morphologies, optical properties, and photocatalytic activities of the NTA precursor-based TiO2 were thoroughly investigated. The origin of the enhanced visible light photocatalytic activity is discussed in detail.

  17. Facile synthesis and enhanced visible light photocatalytic activity of N and Zr co-doped TiO2 nanostructures from nanotubular titanic acid precursors

    NASA Astrophysics Data System (ADS)

    Zhang, Min; Yu, Xinluan; Lu, Dandan; Yang, Jianjun

    2013-12-01

    Zr/N co-doped TiO2 nanostructures were successfully synthesized using nanotubular titanic acid (NTA) as precursors by a facile wet chemical route and subsequent calcination. These Zr/N-doped TiO2 nanostructures made by NTA precursors show significantly enhanced visible light absorption and much higher photocatalytic performance than the Zr/N-doped P25 TiO2 nanoparticles. Impacts of Zr/N co-doping on the morphologies, optical properties, and photocatalytic activities of the NTA precursor-based TiO2 were thoroughly investigated. The origin of the enhanced visible light photocatalytic activity is discussed in detail.

  18. Structural, morphological and electroluminescence studies of Zno:Co nanophosphor

    NASA Astrophysics Data System (ADS)

    Singh, Anju; Vishwakarma, H. L.

    2016-09-01

    The nanoparticles of zinc oxide (ZnO) doped with various concentrations of cobalt (Co) were synthesized by chemical precipitation method in the presence of capping agent polyvinylpyrrolidone (PVP). The effect of doping concentration on structural and morphological properties has been studied by X-ray diffraction (XRD) and scanning electron microscope (SEM). Cell volume, bond length, texture coefficient, lattice constants and dislocation density are also studied. Here, we also compared the interplaner spacing and relative peak intensities from their standard values with different angles. Crystallite sizes have been calculated by Debye-Scherrer's formula whose values are decreasing with increase in cobalt content up to 3 %. It has been seen that the growth orientation of the prepared ZnO nanorods was (101). The XRD analysis also ensures that ZnO has a hexagonal (wurtzite) crystal structure. The electroluminescence (EL) cells were prepared by placing pure and cobalt-doped ZnO nanoparticles between ITO-coated conducting glass plate and aluminium foil. Alternating voltage of various frequencies was applied, and EL brightness at different voltages was measured and corresponding current was also recorded. The voltage dependence of electroluminescence (EL) brightness of the ZnO:Co shows exponential increase. The linear voltage-current characteristic indicates ohmic nature. The EL brightness at a particular voltage is found to increase by increasing Co doping, but for higher percentage of Co the EL brightness is reduced. It is also seen that Co does not influence the threshold voltage. The brightness is also affected by increasing the frequency of AC signal.

  19. Effects of Mg-codoping on luminescence and scintillation properties of Ce doped Lu3(Ga,Al)5O12 single crystals

    NASA Astrophysics Data System (ADS)

    Yamaguchi, Hiroaki; Kamada, Kei; Pejchal, Jan; Kurosawa, Shunsuke; Shoji, Yasuhiro; Yokota, Yuui; Ohashi, Yuji; Yoshikawa, Akira

    2017-03-01

    Effects of Mg co-doping on scintillation properties of Ce:Lu3(Ga,Al)5O12 (LGAG) were investigated. Mg 200 ppm co-doped Ce:LGAG single crystals were prepared by micro pulling down method. Absorption and radioluminescence spectra were measured together with several other scintillation characteristics, namely the scintillation decay and light yield to reveal the effect of Mg co-doping. Ce4+ charge transfer absorption was observed below 340 nm in Mg,Ce:LGAG which is in good agreement with previous reports for other garnet-based crystals. The scintillation decay time showed the tendency to be accelerated and the light yield was enhanced by Mg co-doping.

  20. Comparative studies of CdS, CdS:Al, CdS:Na and CdS:(Al-Na) thin films prepared by spray pyrolysis

    NASA Astrophysics Data System (ADS)

    Yılmaz, S.; Atasoy, Y.; Tomakin, M.; Bacaksız, E.

    2015-12-01

    In the present study, the spray pyrolysis technique was used to prepare pure CdS, 4 at.% Al-doped CdS, 4 at.% Na-doped CdS and (4 at.% Al, 4 at.% Na)-co-doped CdS thin films. It was found from X-ray diffraction data that all the specimens showed hexagonal wurtzite structure with the preferred orientation of (101). Scanning electron microscopy results indicated that 4 at.% Al-doping caused a grain growth in the morphology of CdS thin films whereas the 4 at.% Na-doping and (4 at.% Al, 4 at.% Na)-co-doping led to porous structure with small grains. The band gap value of CdS thin films increased to 2.42 eV after 4 at.% Al-doping. However, it reduced to 2.30 eV and 2.08 eV for 4 at.% Na-doping and (4 at.% Al, 4 at.% Na)-co-doping, respectively. The room temperature photoluminescence measurements illustrated that the peak intensity of CdS thin films enhanced with 4 at.% Al-doping while 4 at.% Na-doping and (4 at.% Al, 4 at.% Na)-co-doping caused a decline in the intensity. The maximum carrier concentration and minimum resistivity were obtained for 4 at.% Al-doped CdS thin films, which is associated with the grain growth. Furthermore, (4 at.% Al, 4 at.% Na)-co-doping gave rise to a slight reduction in the carrier concentration and a slight increment in the resistivity. As a result, it can be said that 4 at.% Al-doped CdS thin films exhibited the best electrical and optical properties, which is important for the opto-electronic applications.