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Sample records for al co-doped zno

  1. Charge Compensated (Al, N) Co-Doped Zinc Oxide (ZnO) Films for Photlelectrochemical Application

    SciTech Connect

    Shet, S.

    2012-01-01

    ZnO thin films with significantly reduced bandgaps were synthesized by doping N and co-doping Al and N at 100oC. All the films were synthesized by radio-frequency magnetron sputtering on F-doped tin-oxide-coated glass. We found that co-doped ZnO:(Al,N) thin films exhibited significantly enhanced crystallinity as compared to ZnO doped solely with N, ZnO:N, at the same growth conditions. Furthermore, annealed ZnO:(Al,N) thin films exhibited enhanced N incorporation over ZnO:N films. As a result, ZnO:(Al,N) films exhibited improved photocurrents than ZnO:N films grown with pure N doping, suggesting that charge-compensated donor-acceptor co-doping could be a potential method for bandgap reduction of wide-bandgap oxide materials to improve their photoelectrochemical performance.

  2. Ferromagnetism studies of Cu-doped and (Cu, Al) co-doped ZnO thin films

    NASA Astrophysics Data System (ADS)

    Wu, S. Z.; Yang, H. L.; Xu, X. G.; Miao, J.; Jiang, Y.

    2011-01-01

    We have studied the room temperature ferromagnetism (FM) in Cu-doped and (Cu, Al) co-doped ZnO thin films which were grown on quartz substrates by chemical method based on a sol-gel process combining with spin-coating technology. X-ray diffraction (XRD) patterns demonstrate that both the Cu-doped and (Cu, Al) co-doped ZnO films have the hexagonal wurtzite structure with c-axis orientation. Alternating Gradient Magnetometer (AGM) measurements confirm that all the doped ZnO samples are ferromagnetic at room temperature. When the doped Cu content is 1 %, the Cu-doped ZnO film has the strongest FM. The FM significantly decreases in the (Cu, Al) co-doped ZnO films. The doping of Al ions suppresses the FM induced by the doped Cu ions.

  3. Transparent and conductive Al/F and In co-doped ZnO thin films deposited by spray pyrolysis

    NASA Astrophysics Data System (ADS)

    Hadri, A.; Taibi, M.; El hat, A.; Mzerd, A.

    2016-02-01

    In doped ZnO (IZO), In-Al co-doped ZnO (IAZO) and In-F co-doped ZnO (IFZO) were deposited on glass substrates at 350 °C by spray pyrolysis technique. The structural, optical and electrical properties of as-deposited thin films were investigated and compared. A polycrystalline and (002) oriented wurtzite crystal structure was confirmed by X-ray patterns for all films; and the full width at half -maximum (FWHM) of (002) diffraction peak increased after co-doping. The investigation of the optical properties was performed using Uv-vis spectroscopy. The average transmittances of all the films were between 70 and 85%. Hall Effect measurements showed that the electrical conductivity of co-doped films increased as compared with IZO thin film. The highest conductivity of about 16.39 Ω-1 cm-1 was obtained for as-deposited IFZO thin film. In addition, the thin films were annealed at 350 °C for two hour under Ar atmosphere and their optical, electrical properties and the associated photoluminescence (PL) responses of selected films were analysed. After annealing, the electrical conductivity of all thin films was improved and the optical transmittance remained above 70%. Room temperature PL revealed that the annealed IAZO thin film had a strong green emission than that of IZO film.

  4. Sol-gel derived Al-Ga co-doped transparent conducting oxide ZnO thin films

    NASA Astrophysics Data System (ADS)

    Serrao, Felcy Jyothi; Sandeep, K. M.; Bhat, Shreesha; Dharmaprakash, S. M.

    2016-05-01

    Transparent conducting ZnO doped with Al, Ga and co-doped Al and Ga (1:1) (AGZO) thin films were grown on glass substrates by cost effective sol-gel spin coating method. The XRD results showed that all the films are polycrystalline in nature and highly textured along the (002) plane. Enhanced grain size was observed in the case of AGZO thin films. The transmittance of all the films was more than 83% in the visible region of light. The electrical properties such as carrier concentration and mobility values are increased in case of AGZO compared to that of Al and Ga doped ZnO thin films. The minimum resistivity of 2.54 × 10-3 Ω cm was observed in AGZO thin film. The co-doped AGZO thin films exhibited minimum resistivity and high optical transmittance, indicate that co-doped ZnO thin films could be used in transparent electronics mainly in display applications.

  5. RETRACTED: Investigation of structural, optical and electronic properties in Al-Sn co-doped ZnO thin films

    NASA Astrophysics Data System (ADS)

    Pan, Zhanchang; Tian, Xinlong; Wu, Shoukun; Yu, Xia; Li, Zhuliang; Deng, Jianfeng; Xiao, Chumin; Hu, Guanghui; Wei, Zhigang

    2013-01-01

    This article has been retracted: please see Elsevier Policy on Article Withdrawal (http://www.elsevier.com/locate/withdrawalpolicy). This article has been retracted at the request of the Editor-in-Chief. Figures 3 and 4 of this paper have also been presented as belonging to other materials in other publications. This observation is evidence of fraud and therefore it is not certain that the described research and conclusions of this paper belong to the presented images. Figures 3 and 4 of this paper can also be found in: Effect of annealing on the structures and properties of Al and F co-doped ZnO nanostructures, Materials Science in Semiconductor Processing, 2014, 17, 162-167, http://dx.doi.org/10.1016/j.mssp.2013.09.023 Highly transparent and conductive Sn/F and Al co-doped ZnO thin films prepared by sol-gel method, Journal of Alloys and Compounds, 2014,583, 32-38, http://dx.doi.org/10.1016/j.jallcom.2013.06.192 Properties of fluorine and tin co-doped ZnO thin films deposited by sol-gel method, Journal of Alloys and Compounds, 2013,576, 31-37, http://dx.doi.org/10.1016/j.jallcom.2013.04.132

  6. Hydrothermal growth and conductivity enhancement of (Al, Cu) co-doped ZnO nanorods thin films

    NASA Astrophysics Data System (ADS)

    Chakraborty, Mohua; Mahapatra, Preetilata; Thangavel, R.

    2016-05-01

    The incorporation of Al, Cu co-doping in ZnO host lattice plays an important role in modification of structural, optical and electrical properties in optoelectronic devices. In the present work, we were grown one dimensional ZnO nanorods (NRs) doped with different concentration of Al (0%~5%) and Cu was kept 20 M% on ITO glass substrates using a facile hydrothermal method, and investigated the effect of the codoping on the surface morphology and the electrical and optical performances of the doped ZnO NRs as photo anodes for solar water splitting applications. The crystallite size of NRs shows tuning in the band gap between 3.194 (Zn0.79Al0.01Cu0.2O) to 3.212 eV (Zn0.75Al0.05Cu0.2O) with Aluminium doping concentration and a remarkable improvement in current density (J) from 0.05 mA/cm2 to 4.98 mA/cm2 was achieved by incorporating Al and Cu has a critical effect of ZnO nanorods.

  7. X-ray Photoelectron Spectroscopy Study of Al- and N- Co-Doped p-Type ZnO Thin Films

    SciTech Connect

    Yuan, G. D.; Ye, Z. Z.; Huang, J. Y.; Zhu, L. P.; Perkins, C. L.; Zhang, S. B.

    2009-01-01

    The chemical state of nitrogen, aluminum, oxygen and zinc in Al-N co-doped p-type ZnO thin films was investigated by X-ray photoelectron spectroscopy (XPS). N{sub 1s} peak were detected in both the two p-type ZnO thin films, showing two components. The higher binding energy peak may be due to the Al-No-H species, and the lower one perhaps derive from the (NH{sub 2}){sup -} cluster for the ammonia introduction. These two peaks both contribute to the p-type behavior in the ZnO films. A symmetry 74.4 eV binding energy in Al{sub 2p3/2} photoelectron peaks revealed an Al-N bonding state, a key factor to the co-doping method.

  8. Effect of annealing atmosphere on photoluminescence and gas sensing of solution-combustion-synthesized Al, Pd co-doped ZnO nanoparticles

    NASA Astrophysics Data System (ADS)

    Li, Yan; Liu, Min; Lv, Tan; Wang, Qiong; Zou, Yun-ling; Lian, Xiao-xue; Liu, Hong-peng

    2015-11-01

    Al, Pd co-doped ZnO nanoparticles (NPs) synthesized using a solution combustion method and subsequent annealing process under various atmospheres, including air, nitrogen, and hydrogen, were characterized using x-ray diffraction, energy-dispersive x-ray spectroscopy, field-emission scanning electron microscopy, transmission electron microscopy, and photoluminescence spectroscopy. The gas-sensing properties of the sensors based on the NPs were also examined. The results indicated that the Al, Pd co-doped ZnO NPs, with an average crystallite size of 10 nm, exhibited enhanced gas-sensing performance compared with that of pure ZnO and Al-doped ZnO. The response of the Al, Pd co-doped ZnO NPs annealed in N2 to ethanol (49.22) was nearly 5.7 times higher than that to acetone (8.61) and approximately 20 - 27 times higher than that to benzene (2.38), carbon monoxide (2.23), and methane (1.78), which demonstrates their excellent selectivity to ethanol versus other gases. This high ethanol response can be attributed to the combined effects of the small size, Schottky barrier, lattice defects, and catalysis. [Figure not available: see fulltext.

  9. Microstructural, optical, and electrical properties of Ni–Al co-doped ZnO films prepared by DC magnetron sputtering

    SciTech Connect

    Jo, Young Dae; Hui, K.N.; Hui, K.S.; Cho, Y.R.; Kim, Kwang Ho

    2014-03-01

    Graphical abstract: - Highlights: • Ni–Al co-doped ZnO (NiAl:ZnO) composite thin films were deposited by DC magnetron sputtering at room temperature. • All films showed a highly preferential (0 0 2) c-axis orientation. • XPS revealed the presence of metallic Ni, NiO, and Ni{sub 2}O{sub 3} states, and Ni atoms were successfully doped in the NiAl:ZnO films. • NiAl:ZnO (3 wt% Ni) film showed the lowest electrical resistivity of 2.59 × 10{sup −3} Ω cm. • Band gap widening (4.18 eV) was observed in the NiAl:ZnO films with 5 wt% Ni. - Abstract: Ni–Al co-doped ZnO (NiAl:ZnO) films with fixed Al content at 2 wt% and different Ni contents (2.5, 3, and 5 wt%) were deposited by DC magnetron sputtering in an argon atmosphere at room temperature. X-ray diffraction revealed that all films showed a highly preferential (0 0 2) c-axis orientation. XPS revealed the presence of metallic Ni, NiO, and Ni{sub 2}O{sub 3} states, and Ni atoms were successfully doped in NiAl:ZnO films, which did not result in a change in ZnO crystal structure and orientation. The electrical resistivity of NiAl:ZnO film was decreased to 2.59 × 10{sup −3} Ω cm at a Ni doping concentration of 3 wt% compared with undoped Al-doped ZnO film (5.58 × 10{sup −3} Ω cm). The mean optical transmittance in the visible range was greater than 80% for all films. Band gap widening (4.18 eV) was observed in the NiAl:ZnO films with 5 wt% Ni, attributed to the Burstein–Moss shift due to the increase of carrier concentration.

  10. Effect of Ag/Al co-doping method on optically p-type ZnO nanowires synthesized by hot-walled pulsed laser deposition

    PubMed Central

    2012-01-01

    Silver and aluminum-co-doped zinc oxide (SAZO) nanowires (NWs) of 1, 3, and 5 at.% were grown on sapphire substrates. Low-temperature photoluminescence (PL) was studied experimentally to investigate the p-type behavior observed by the exciton bound to a neutral acceptor (A0X). The A0X was not observed in the 1 at.% SAZO NWs by low-temperature PL because 1 at.% SAZO NWs do not have a Ag-O chemical bonding as confirmed by XPS measurement. The activation energies (Ea) of the A0X were calculated to be about 18.14 and 19.77 meV for 3 and 5 at.% SAZO NWs, respectively, which are lower than the activation energy of single Ag-doped NW which is about 25 meV. These results indicate that Ag/Al co-doping method is a good candidate to make optically p-type ZnO NWs. PMID:22647319

  11. Effect of substrate temperature on transparent conducting Al and F co-doped ZnO thin films prepared by rf magnetron sputtering

    NASA Astrophysics Data System (ADS)

    Wang, Fang-Hsing; Chang, Chiao-Lu

    2016-05-01

    ZnO is a wide bandgap semiconductor that has many potential applications such as solar cells, thin film transistors, light emitting diodes, and gas/biological sensors. In this study, a composite ceramic ZnO target containing 1 wt% Al2O3 and 1.5 wt% ZnF2 was prepared and used to deposit transparent conducting Al and F co-doped zinc oxide (AFZO) thin films on glass substrates by radio frequency magnetron sputtering. The effect of substrate temperatures ranging from room temperature (RT) to 200 °C on structural, morphological, electrical, chemical, and optical properties of the deposited thin films were investigated by X-ray diffraction (XRD), field emission scanning electron microscopy (FE-SEM), atomic force microscopy (AFM), Hall effect measurement, X-ray photoelectron spectroscopy, secondary ion mass spectrometry, and UV-vis spectrophotometer. The XRD results showed that all the AFZO thin films had a (0 0 2) diffraction peak, indicating a typical wurtzite structure with a preferential orientation of the c-axis perpendicular to the substrate. The FE-SEM and AFM analyses indicated that the crystallinity and grain size of the films were enhanced while the surface roughness decreased as the substrate temperature increased. Results of Hall effect measurement showed that Al and F co-doping decreased the resistivity more effectively than single-doping (either Al or F doping) in ZnO thin films. The resistivity of the AFZO thin films decreased from 5.48 × 10-4 to 2.88 × 10-4 Ω-cm as the substrate temperature increased from RT to 200 °C due to the increased carrier concentration and Hall mobility. The optical transmittances of all the AFZO thin films were over 92% in the wavelength range of 400-800 nm regardless of substrate temperature. The blue-shift of absorption edge accompanied the rise of the optical band gap, which conformed to the Burstein-Moss effect. The developed AFZO thin films are suitable as transparent conducting electrodes for various optoelectronic

  12. Co doped ZnO nanowires as visible light photocatalysts

    NASA Astrophysics Data System (ADS)

    Šutka, Andris; Käämbre, Tanel; Pärna, Rainer; Juhnevica, Inna; Maiorov, Mihael; Joost, Urmas; Kisand, Vambola

    2016-06-01

    High aspect ratio cobalt doped ZnO nanowires showing strong photocatalytic activity and moderate ferromagnetic behaviour were successfully synthesized using a solvothermal method and characterized by scanning electron microscopy (SEM), X-ray powder diffraction (XRD), X-ray photoelectron spectroscopy (XPS), X-ray absorption spectroscopy (XAS), vibrating sample magnetometry (VSM) and UV-visible absorption spectroscopy. The photocatalytic activities evaluated for visible light driven degradation of an aqueous methylene orange (MO) solution were higher than for Co doped ZnO nanoparticles at the same doping level and synthesized by the same synthesis route. The rate constant for MO visible light photocatalytic degradation was 1.9·10-3 min-1 in case of nanoparticles and 4.2·10-3 min-1 in case of nanowires. We observe strongly enhanced visible light photocatalytic activity for moderate Co doping levels, with an optimum at a composition of Zn0.95Co0.05O. The enhanced photocatalytic activities of Co doped ZnO nanowires were attributed to the combined effects of enhanced visible light absorption at the Co sites in ZnO nanowires, and improved separation efficiency of photogenerated charge carriers at optimal Co doping.

  13. Al-Mg co-doping effect on optical and magnetic properties of ZnO nanopowders

    NASA Astrophysics Data System (ADS)

    Si, Xiaodong; Liu, Yongsheng; Wu, Xinfang; Lei, Wei; Lin, Jia; Gao, Tian; Zheng, Li

    2015-07-01

    Zn0.97 - xMgxAl0.03O (x = 0 , 0.01 , 0.03 and 0.05) nanoparticles were prepared by hydrothermal growth, and their optical and magnetic properties were systematically studied by the X-ray diffraction (XRD), the UV-visible spectrophotometer, the infrared spectrometer and the physical properties measurement system (PPMS). These results showed that all the nanopowders had hexagonal wurtzite structures. With increasing the content of Mg, the strength of the (110) intensity peak increased. When Mg atoms were not incorporated into the Zn0.97Al0.03O lattice, the infrared light transmittance was higher than that of other groups of samples. In the UV range, the absorption decreased with the increase of the concentration of Mg. Mg doping weakened the magnetic property of the nanoparticles at room temperature. The zero-field-cooled (ZFC) and field-cooled (FC) magnetization curves were separated with the decrease of temperature due to the pinning effect between the ferromagnetic domain and antiferromagnetic domain.

  14. Improving the ethanol gas-sensing properties of porous ZnO microspheres by Co doping

    SciTech Connect

    Xiao, Qi Wang, Tao

    2013-08-01

    Graphical abstract: - Highlights: • Co-doped porous ZnO microspheres were synthesized. • 3 mol% Co-doped ZnO sensor showed the highest response to ethanol. • 3 mol% Co-doped ZnO sensor exhibited fast recovery property. • 3 mol% Co-doped ZnO sensor exhibited good selectivity and long-term stability. - Abstract: Porous Co-doped ZnO microspheres were prepared by a simple hydrothermal method combined with post-annealing. Co species existed as a form of divalent state in the sample and substituted Zn{sup 2+} sites in ZnO crystal lattice, which was affirmed by X-ray diffraction, UV–vis diffuse reflectance spectroscopy and X-ray photoelectron spectroscopy. The gas-sensing measurements demonstrated that the 3 mol% Co-doped ZnO sample showed the highest response value to 100 ppm ethanol at 350 °C, which were 5 folds higher than that of the pure ZnO sample. In addition, the 3 mol% Co-doped ZnO sensor exhibited fast recovery property, good quantitative determination, good selectivity and long-term stability. The superior sensing properties were contributed to high specific surface area combined with the large amount of oxygen vacancies originating from Co doping.

  15. Structural, magnetic and electronic structure properties of Co doped ZnO nanoparticles

    SciTech Connect

    Kumar, Shalendra; Song, T.K.; Gautam, Sanjeev; Chae, K.H.; Kim, S.S.; Jang, K.W.

    2015-06-15

    Highlights: • XRD and HR-TEM results show the single phase nature of Co doped ZnO nanoparticles. • XMCD and dc magnetization results indicate the RT-FM in Co doped ZnO nanoparticles. • Co L{sub 3,2} NEXAFS spectra infer that Co ions are in 2+ valence state. • O K edge NEXAFS spectra show that O vacancy increases with Co doping in ZnO. - Abstract: We reported structural, magnetic and electronic structure studies of Co doped ZnO nanoparticles. Doping of Co ions in ZnO host matrix has been studied and confirmed using various methods; such as X-ray diffraction (XRD), field emission scanning electron microscopy (FE-SEM), energy dispersed X-ray (EDX), high resolution transmission electron microscopy (HR-TEM), Fourier transform infrared spectroscopy (FT-IR), near edge X-ray absorption fine structure (NEXAFS) spectroscopy, magnetic hysteresis loop measurements and X-ray magnetic circular dichroism (XMCD). From the XRD and HR-TEM results, it is observed that Co doped ZnO nanoparticles have single phase nature with wurtzite structure and exclude the possibility of secondary phase formation. FE-SEM and TEM micrographs show that pure and Co doped nanoparticles are nearly spherical in shape. O K edge NEXAFS spectra indicate that O vacancies increase with Co doping. The Co L{sub 3,2} edge NEXAFS spectra revealed that Co ions are in 2+ valence state. DC magnetization hysteresis loops and XMCD results clearly showed the intrinsic origin of temperature ferromagnetism in Co doped ZnO nanoparticles.

  16. Ni, Fe Co-doped ZnO nanoparticles synthesized by solution combustion method

    SciTech Connect

    Dhiman, Pooja Chand, Jagdish Verma, S. Sarveena, Singh, M.

    2014-04-24

    This paper outlines the synthesis and characterization of Ni-Fe co-doped ZnO nanoparticles by facile solution combustion method. The structural characterization by XRD confirmed the phase purity of the samples. Surface morphology studied by scanning electron microscope revealed cubic type shape of grains. EDS analysis conformed the elemental composition. Higher value of DC electrical conductivity and less band gap for co-doped ZnO from UV-Vis studies confirmed the change in defect chemistry of ZnO Matrix.

  17. Electronic structure of Co-doped ZnO nanorods

    NASA Astrophysics Data System (ADS)

    Neffati, Ahmed; Souissi, Hajer; Kammoun, Souha

    2012-10-01

    The optical transmission spectra, the photoluminescence (PL), and the photoluminescence excitation (PLE) spectra of the cobalt doped zinc oxide nanorods Zn1-xCoxO (x = 0.01, 0.10) were measured by Loan et al. [J. Phys. D: Appl. Phys. 42, 065412 (2009)] in the region 1.5-4 eV. These spectra exhibit a group of ultraviolet narrow lines in the region of 3.0-3.4 eV related to the near-band-edge emission of the host ZnO materials and a group of emission lines in the red region of 1.8-1.9 eV assigned to the radiative transitions within the tetrahedral Co2+ ions in the ZnO host crystal. The group of lines in the visible region provides important information about the electronic structure of the cobalt doped zinc oxide nanorods. This work investigates a theoretical crystal-field analysis of the visible lines associated to the Co2+ ion transition occupying a Td site symmetry in ZnO host crystal. A satisfactory correlations were obtained between experimental and calculated energy levels. The electronic structure was compared with the reported for cobalt transition ion doped in ZnO nanoparticles and bulk crystals [Volbers et al., Appl. Phys. A 88, 153 (2007) and H. J. Schulz and M. Thiede, Phys. Rev. B 35, 18 (1987)]. In order to explain the existence of excitation peaks observed near the band edge of the ZnO host, an energy transfer mechanism is proposed.

  18. Synthesis and characterization of aluminum–boron co-doped ZnO nanostructures

    SciTech Connect

    Kumar, Vinod; Singh, R.G.; Singh, Neetu; Kapoor, Avinashi; Mehra, R.M.; Purohit, L.P.

    2013-02-15

    Graphical abstract: In this paper, we have reported the development of aluminum boron co-doped ZnO (AZB) nanostructures deposited by sol–gel method using spin coating technique. The structure of AZB nanostructure films has been found to exhibit the hexagonal wurtzite structure. The shape of nanostructures has been changed from seed structure to tetra-pods, tetra-pods to nanorods and finally nanorods to nanofiber with variation in Al concentration. The structural, electrical and optical properties of AZB nanostructures are tuned with shape and size of the nanostructures. The effect of Al concentration on the resistivity (ρ), carrier concentration (n) and mobility (μ) of nanostructure films is shown in graph below. A minimum resistivity of 6.8 × 10{sup −4} Ω cm is obtained in AZB films at doping concentration of B 0.6 at.% and Al 0.4 at.% with a sheet resistance of 24 Ω/□ and transmittance of ∼88% for nanorods structure. These nanostructures could be applicable for a various nano-regime devices such as photovolatics, gas sensing and field emission device. Display Omitted Highlights: ► Synthesis of Al and B co-doped ZnO (AZB) nanostructures. ► Minimum resistivity (ρ) of 6.8 × 10{sup −4} Ω cm in AZB films. ► Minimum sheet resistance (R{sub s}) 24 Ω/□ in nanorods (NRs). ► Maximum transmittance ∼88% in NRs. ► Application in nano-electronic devices. -- Abstract: In this paper, we have reported the development of aluminum boron co-doped ZnO (AZB) nanostructures deposited by sol–gel method using spin coating technique. The structure of AZB nanostructure films has been found to exhibit the hexagonal wurtzite structure. The shape of AZB nanostructures has changed from seed structure to tetra-pods, tetra-pods to nanorods and finally to nanofibers with increase in aluminum concentration. The structural, electrical and optical properties of AZB films are tuned with shape and size of the nanostructures. These AZB nanostructures could be

  19. Rapid synthesis of Co, Ni co-doped ZnO nanoparticles: Optical and electrochemical properties

    NASA Astrophysics Data System (ADS)

    Romeiro, Fernanda C.; Marinho, Juliane Z.; Lemos, Samantha C. S.; de Moura, Ana P.; Freire, Poliana G.; da Silva, Luis F.; Longo, Elson; Munoz, Rodrigo A. A.; Lima, Renata C.

    2015-10-01

    We report for the first time a rapid preparation of Zn1-2xCoxNixO nanoparticles via a versatile and environmentally friendly route, microwave-assisted hydrothermal (MAH) method. The Co, Ni co-doped ZnO nanoparticles present an effect on photoluminescence and electrochemical properties, exhibiting excellent electrocatalytic performance compared to undoped ZnO sample. Photoluminescence spectroscopy measurements indicated the reduction of the green-orange-red visible emission region after adding Co and Ni ions, revealing the formation of alternative pathways for the generated recombination. The presence of these metallic ions into ZnO creates different defects, contributing to a local structural disorder, as revealed by Raman spectra. Electrochemical experiments revealed that the electrocatalytic oxidation of dopamine on ZnO attached to multi-walled carbon nanotubes improved significantly in the Co, Ni co-doped ZnO samples when compared to pure ZnO.

  20. Characterization of co-doped (In, N): ZnO by indigenous thermopower measurement system

    NASA Astrophysics Data System (ADS)

    Kedia, Sanjay Kumar; Singh, Anil; Chaudhary, Sujeet

    2016-05-01

    The thermopower measurement of (In, N) co-doped ZnO thin films have been carried out using indigenous high and low temperature thermopower measurement system. The compact thermopower measurement system has been designed, developed, tested in house. The sensitivity and accuracy of indigenous thermopower system have been investigated by measuring thermopower of standard samples like Cu, Ni, Sb etc. It has been also investigated by the comparison of carrier concentration using Hall Effect and Thermopower measurement of these (In, N) co-doped ZnO thin films. The constant temperature gradient between hot and cold junction has been maintained by using the temperature controller. The room temperature and low temperature Seebeck coefficient measurements were performed on these co-doped ZnO samples. A series of experiments have been performed to detect the p-type conductivity in co-doped ZnO thin films, particularly at low temperature. The negative Seebeck coefficient observed down to 40 K established the n-type behavior in these co-doped samples.

  1. Local structure investigation of Co doped ZnO thin films prepared by RF sputtering technique

    NASA Astrophysics Data System (ADS)

    Yadav, A. K.; Haque, S. Maidul; Shukla, D.; Phase, D. M.; Jha, S. N.; Bhattacharyya, D.

    2016-05-01

    Co doped ZnO thin films have been prepared using rf magnetron sputtering technique with varying Co doping concentration. GIXRD has been used to probe long range order and Zn, Co and Oxygen K-edge XAFS measurements have been used for investigating local structure around Zn and Co atoms. GIXRD results show wurzite structure of the samples while XANES and EXAFS results at Zn and Co K edge show that Co is going at Zn site in ZnO matrix and no other phase is present. These results are further confirmed by O K edge and Co L2,3 edge XANES measurements.

  2. Rapid synthesis of Co, Ni co-doped ZnO nanoparticles: Optical and electrochemical properties

    SciTech Connect

    Romeiro, Fernanda C.; Marinho, Juliane Z.; Lemos, Samantha C.S.; Moura, Ana P. de; Freire, Poliana G.; Silva, Luis F. da; Longo, Elson; Munoz, Rodrigo A.A.; Lima, Renata C.

    2015-10-15

    We report for the first time a rapid preparation of Zn{sub 1−2x}Co{sub x}Ni{sub x}O nanoparticles via a versatile and environmentally friendly route, microwave-assisted hydrothermal (MAH) method. The Co, Ni co-doped ZnO nanoparticles present an effect on photoluminescence and electrochemical properties, exhibiting excellent electrocatalytic performance compared to undoped ZnO sample. Photoluminescence spectroscopy measurements indicated the reduction of the green–orange–red visible emission region after adding Co and Ni ions, revealing the formation of alternative pathways for the generated recombination. The presence of these metallic ions into ZnO creates different defects, contributing to a local structural disorder, as revealed by Raman spectra. Electrochemical experiments revealed that the electrocatalytic oxidation of dopamine on ZnO attached to multi-walled carbon nanotubes improved significantly in the Co, Ni co-doped ZnO samples when compared to pure ZnO. - Graphical abstract: Rapid synthesis of Co, Ni co-doped ZnO nanoparticles: optical and electrochemical properties. Co, Ni co-doped ZnO hexagonal nanoparticles with optical and electrocatalytic properties were successfully prepared for the first time using a microwave hydrothermal method at mild conditions. - Highlights: • Co{sup 2+} and Ni{sup 2+} into ZnO lattice obtained a mild and environmentally friendly process. • The heating method strongly influences in the growth and shape of the particles. • Short-range defects generated by the ions insertion affects the photoluminescence. • Doped ZnO nanoparticles improve the electrocatalytic properties of pure oxide.

  3. Photoluminescence, ellipsometric, optical and morphological studies of sprayed Co-doped ZnO films

    NASA Astrophysics Data System (ADS)

    Gençyılmaz, O.; Atay, F.; Akyüz, I.

    2016-06-01

    In this study, undoped and cobalt (Co)-doped zinc oxide (ZnO) films were successfully produced by ultrasonic spray pyrolysis (USP) technique at low temperature (350°C). The optical and surface properties were investigated as a function of Co content. The optical parameters (thickness, refractive index and extinction coefficient) were determined using spectroscopic ellipsometry (SE) and it was seen that the refractive index and extinction coefficient values of Co-doped ZnO films decreased slightly depending on the increasing of Co doping. For investigation, the transmittance and photoluminescence (PL) spectra of the films, UV-Vis spectrophotometer and PL spectroscopy were used at room temperature. The transmittance spectra show that transmittance values decreased and Co+2 ions substitute Zn+2 ions of ZnO lattice. The optical band gap values decreased from 3.26 eV to 2.85 eV with the changing of Co content. The results of PL spectra exhibit the position of the different emission peaks unchanged but the intensity of peaks increased with increasing Co doping. Also, the surface properties of the films were obtained by atomic force microscopy (AFM) and these results indicated that the surface morphology and roughness values were prominently changed with Co doping.

  4. Luminescence Properties of Sm3+/Eu3+ Co-Doped ZnO Quantum Dots.

    PubMed

    Liu, Fengyi; Li, Hong; Hu, Yajing; Na, Jin; Mou, Yun; Yang, Kun; Ye, Zuhu; Li, Mingyue; Xie, Ya-Hong

    2016-04-01

    In order to improve luminescence properties of semiconductor ZnO quantum dots (QDs), Sm3+/Eu3+ co-doped ZnO QDs have been controllably synthesized by sol-gel method in this paper. ZnO QDs have a spherical shape with mean diameter at about 5-6 nm, which was characterized by high-resolution transmission electron microscopy (HRTEM). ZnO QDs have hexagonal wurtzite structure with parts of Sm3+ and Eu3+ incorporated into the lattice, which was demonstrated by X-ray Diffraction (XRD). Luminescence properties at room temperature (RT) of different amount of Sm3+ and 2 mol% Eu3+ doped ZnO QDs were examined in-depth by optical spectra. In contrast to the Pr3+/Eu3+ co-doped fluorescent performance researched in our previous study, the photoluminescence (PL) spectra indicates the unique luminescence properties of Sm3+/Eu3+ co-doped ZnO QDs. In addition, fluorescence lifetimes were obtained to illustrate the luminous mechanism. PMID:27451672

  5. Synthesis, structural and optical characterization of undoped, N-doped ZnO and co-doped ZnO thin films

    SciTech Connect

    Pathak, Trilok Kumar Kumar, R.; Purohit, L. P.

    2015-05-15

    ZnO, N-doped ZnO and Al-N co-doped ZnO thin films were deposited on ITO coated corning glass by spin coater using sol-gel method. The films were annealed in air at 450°C for one hour. The crystallographic structure and morphology of the films were studied by X-ray diffraction (XRD) and scanning electron microscopy (SEM) respectively. The X-ray diffraction results confirm that the thin films are of wurtzite hexagonal with a very small distortion. The optical properties were investigated by transmission spectra of different films using spectrophotometer (Shimadzu UV-VIS-NIR 3600). The results indicate that the N doped ZnO thin films have obviously enhanced transmittance in visible region. Moreover, the thickness of the films has strong influences on the optical constants.

  6. Magnetic structure and interaction in (Sb, Co) co-doped ZnO thin films

    NASA Astrophysics Data System (ADS)

    Samanta, K.; Sardar, M.; Singh, S. P.; Katiyar, R. S.

    2014-10-01

    The magnetic behaviour of (Co, Sb) co-doped ZnO thin films grown by pulsed laser deposition is investigated. The irreversibility (ZFC-FC bifurcation) in low field (H = 100 Oe) magnetization and small hysteresis below 300 K are similar in samples with or without Sb co-doping. Both the phenomena originate from the presence of blocked supermoments in the samples. Incorporation of Sb only increases the saturation magnetization and coercivity. The quantitative increase in moment due to Sb co-doping suggests a transfer of electrons from Co ions to Sb-related acceptor complexes. This is supported by a decrease in the number of electronic transitions from Co d electrons to the conduction band seen in optical transmission spectroscopy when Sb is added. The high field susceptibility data show the existence of supermoments with antiferromagnetic interaction between them. We find that the value of the effective antiferromagnetic molecular field constant decreases with increasing Co concentration, revealing that the supermoments are bound magnetic polarons around intrinsic donors, rather than coming from Co precipitates. True ferromagnetism (overlapping polarons) can emerge either with larger intrinsic donors, or with acceptors with shallower levels, than those created by Sb co-doping. Our results suggest that Sb-related acceptor states may be unstable towards accepting electrons from deep d levels of Co ions.

  7. Resistive switching: An investigation of the bipolar–unipolar transition in Co-doped ZnO thin films

    SciTech Connect

    Santos, Daniel A.A.; Zeng, Hao; Macêdo, Marcelo A.

    2015-06-15

    Highlights: • A purely bipolar behavior on a Co-doped ZnO thin film has been demonstrated. • We have shown what can happen if a unipolar test is performed in a purely bipolar device. • An explanation for how a sample can show a purely bipolar switching behavior was suggested. • An important open issue about resistive switching effect was put in debate. - Abstract: In order to investigate the resistive switching effect we built devices in a planar structure in which two Al contacts were deposited on the top of the film and separated by a small gap using a shadow mask. Therefore, two samples of 10% Co-doped ZnO thin films were sputtered on glass substrate. High resolution X-ray diffraction (HRXRD) revealed a highly c-axis oriented crystalline structure, without secondary phase. The high resolution scanning electron microscopy (HRSEM) showed a flat surface with good coverage and thickness about 300 nm. A Keithley 2425 semiconductor characterization system was used to perform the resistive switching tests in the bipolar and unipolar modes. Considering only the effect of compliance current (CC), the devices showed a purely bipolar behavior since an increase in CC did not induce a transition to unipolar behavior.

  8. First-principles study on the electronic and optical properties of Si and Al co-doped zinc oxide for solar cell devices

    NASA Astrophysics Data System (ADS)

    Abbassi, A.; El Amrani, A.; Ez-Zahraouy, H.; Benyoussef, A.; El Amraoui, Y.

    2016-06-01

    Electronic and optical properties of co-doped zinc oxide ZnO with silicon (Si) and aluminum (Al), in Zn1-2 x Si x Al x O (0 ≤ x ≤ 0.0625) original structure forms, are investigated by the first-principles calculations based on the density functional theory (DFT). The optical constants and dielectric functions are investigated with the full-potential linearized augmented plane wave (FP-LAPW) method and the generalized gradient approximation (GGA) by WIEN2k package. The complex dielectric functions, refractive index and band gap of the pure as well as doped and co-doped ZnO were investigated, which are in good agreement with the available experimental results for the undoped ZnO. Thus, the maximum optical transmittance of the co-doped ZnO of about 95 % was achieved; it is higher than that of pure ZnO. Thus, we showed for the Si-Al co-doped ZnO with x = 0.0315 that the optical transmittance can cover a larger range in the visible light region. In addition, an occurrence of important energy levels around Fermi levels was showed, which is mainly due to doping atoms that lead to an overlap between valence and conduction bands, and consequently to the significant conductor behavior of the Si-Al co-doped ZnO. The original Zn1-2 x Si x Al x O structure reveals promising optical and electronic properties, and it can be investigated as good candidates for practical uses as transparent and conducting electrodes in solar cell devices.

  9. Giant temperature coefficient of resistance in Co-doped ZnO thin films

    NASA Astrophysics Data System (ADS)

    Zhou, X. F.; Zhang, H.; Yan, H.; He, C. L.; Lu, M. H.; Hao, R. Y.

    2014-03-01

    A novel high-performance thermistor material based on Co-doped ZnO thin films is presented. The films were deposited by the pulsed laser deposition technique on Si (111) single-crystal substrates. The structural and electronic transport properties were correlated as a function of parameters such as substrate temperature and Co-doped content for Zn1- x Co x O ( x=0.005,0.05,0.10 and 0.15) to prepare these films. The Zn1- x Co x O films were deposited at various substrate temperatures between 20 and 280 °C. A value of 20 %/K for the negative temperature coefficient of resistance (TCR) with a wide range near room temperature was obtained. It was found that both TCR vs. temperature behavior and TCR value were strongly affected by cobalt doping level and substrate temperature. In addition, a maximal TCR value of over 20 % K-1 having a resistivity value of 3.6 Ω cm was observed in a Zn0.9Co0.1O film near 260 °C, which was deposited at 120 °C and shown to be amorphous by X-ray diffraction. The result proved that the optimal Co concentration could help us to achieve giant TCR in Co-doped ZnO films. Meanwhile, the resistivities of the films ranged from 0.4 to 270 Ω cm. A Co-doped ZnO/Si film is a strong candidate of thermometric materials for non-cooling and high-performance bolometric applications.

  10. Impacts of Co doping on ZnO transparent switching memory device characteristics

    NASA Astrophysics Data System (ADS)

    Simanjuntak, Firman Mangasa; Prasad, Om Kumar; Panda, Debashis; Lin, Chun-An; Tsai, Tsung-Ling; Wei, Kung-Hwa; Tseng, Tseung-Yuen

    2016-05-01

    The resistive switching characteristics of indium tin oxide (ITO)/Zn1-xCoxO/ITO transparent resistive memory devices were investigated. An appropriate amount of cobalt dopant in ZnO resistive layer demonstrated sufficient memory window and switching stability. In contrast, pure ZnO devices demonstrated a poor memory window, and using an excessive dopant concentration led to switching instability. To achieve suitable memory performance, relying only on controlling defect concentrations is insufficient; the grain growth orientation of the resistive layer must also be considered. Stable endurance with an ON/OFF ratio of more than one order of magnitude during 5000 cycles confirmed that the Co-doped ZnO device is a suitable candidate for resistive random access memory application. Additionally, fully transparent devices with a high transmittance of up to 90% at wavelength of 550 nm have been fabricated.

  11. Magnetic and dielectric studies of Li-Cu co-doped ZnO nanoparticles

    NASA Astrophysics Data System (ADS)

    Vivek, S.; Ajith, S. K.; Chitralekha, C. S.; Nair, Swapna S.

    2016-05-01

    Room temperature ferromagnetism has been observed in Li-Cu co-doped ZnO nanoparticles prepared by sol-gel route. Our studies indicated that the observed ferromagnetism is a surface phenomenon which depends on oxygen vacancy and the nature of the dopants. Dependence of ferromagnetism on the annealing temperature indicated the role of oxygen vacancy, and the decrease in coercivity as the particle size increases indicates the surface dependence of ferromagnetism. It is found that the addition of dopants also enhanced ferromagnetism. Dielectric studies indicated an increase in dielectric constant as the doping concentration is increased.

  12. Local investigation of hyperfine interactions in pure and Co-doped ZnO

    NASA Astrophysics Data System (ADS)

    Mercurio, M. E.; Carbonari, A. W.; Cordeiro, M. R.; Saxena, R. N.; D'Agostino, L. Z.

    2010-05-01

    In the present work bulk samples of pure as well as Co-doped ZnO with different concentrations were prepared by sol-gel method from highly pure metallic Zn (99.9999%) and Co (99.9999%). The samples were characterized by X-ray diffraction (XRD), scanning electron microscope (SEM), X-ray microanalysis (EDS) and perturbed gamma-gamma angular correlation (PAC) spectroscopy. Carrier-free 111In nuclei were introduced during preparation of the samples and used as probe nuclei at Zn sites for PAC measurements. PAC results show that both pure and Zn1-xCoxO ( x≤0.15) samples have the same electric quadrupole frequency when Co-doped samples are annealed in air, argon or nitrogen atmosphere at 1173 K. SEM and EDS results showed that Co-doped samples are homogeneous without any secondary Co phases. These observations indicate that Co ions are substituted for Zn ions and have a similar electronic structure of Zn ions. A weak local magnetism was observed at temperatures below about 300 K for Co concentration of 10% when sample was annealed in Nitrogen.

  13. Fabrication and photoelectric properties of Er3+ and Yb3+ co-doped ZnO films

    NASA Astrophysics Data System (ADS)

    Feng, Wei; Wang, Xiangfu; Meng, Lan; Yan, Xiaohong

    2016-01-01

    In this paper, the Er3+ and Yb3+ co-doped ZnO films deposited by a novel thermal decomposition method under different annealing temperature process have been reported. The effects of annealing temperature on the morphology and properties of the films are systematically studied. The resulting spectra demonstrate that the Er3+ and Yb3+ co-doped ZnO films possessed the property of up-conversion, converting IR light into visible light that can be absorbed by amorphous silicon solar cell. After all, inner photoelectric effect of the Er3+ and Yb3+ co-doped ZnO films in the amorphous as a light scattering layer are also found with an infrared 980 nm laser as excitation source.

  14. High temperature ferromagnetism and optical properties of Co doped ZnO nanoparticles

    NASA Astrophysics Data System (ADS)

    Pal, Bappaditya; Giri, P. K.

    2010-10-01

    We report on the occurrence of high temperature ferromagnetism (FM) in ZnO nanoparticles (NPs) doped with Co-atoms. ZnO NPs of two different initial sizes are doped with 3% and 5% Co using ball milling and FM is studied at room temperature and above. X-ray diffraction and high-resolution transmission electron microscopy analysis confirm the absence of metallic Co clusters or any other phase different from würtzite-type ZnO. UV-visible absorption studies show change in band structure and photoluminescence studies show green emission band at 520 nm indicating incorporation of Co-atoms and presence of oxygen vacancy defects, respectively in ZnO lattice. Micro-Raman studies of doped samples shows defect related additional bands at 547 and 574 cm-1. XRD and Raman spectra provide clear evidence for strain in the doped ZnO NPs. The field dependence of magnetization (M-H curve) measured at room temperature exhibits the clear FM with saturation magnetization (Ms) and coercive field (Hc) of the order of 3-7 emu/g and 260 Oe, respectively. Temperature dependence of magnetization (M-T) measurement shows sharp ferromagnetic to paramagnetic transition with a high Curie temperature (Tc) of ˜800 K for 3% Co doped ZnO NPs. It is found that doping at 5% and higher concentration does not exhibit a proper magnetic transition. We attempt to fit the observed FM data with the bound magnetic polaron (BMP) model involving localized carriers and magnetic cations. However, calculated concentration of the BMPs is well below the typical percolation threshold in ZnO. We believe that observed high temperature FM is primarily mediated by defects in the strained NPs. ZnO NPs of lower initial size show enhanced FM that may be attributed to size dependent doping effect.

  15. Magnetic and optical properties of Co-doped and Mn-doped ZnO nanocrystalline particles

    NASA Astrophysics Data System (ADS)

    Alsmadi, Abdel; Salameh, B.; Shatnawi, M.; Alnawashi, G.; Bsoul, I.

    We carried out a systematic study on the effect of Co doping and Mn doping on the structural, magnetic and optical properties of ZnO nanocrystalline particles, using x-ray diffraction, x-ray photoelectron spectroscopy (XPS), Quantum Design PPMS-9 magnetometry, and Ultra Violet-Visible spectroscopy. The Zn1- x CoxO and Zn1- x MnxO nanoparticles with 0 <= x <= 0 . 1 were successfully prepared by the formal solid-state reaction method. The XPS results and the XRD analysis with full structural Rietveld refinement reveal that both structures have hexagonal wurtzite structure. For all Co-doped ZnO nanoparticles under investigation, the field dependence of the magnetization curves exhibits ferromagnetic behavior with relatively small coercive fields at room temperature. In addition, we found a signature for antiferromagnetic ordering between the Co ions. For the Mn-doped ZnO nanoparticles, we observed ferromagnetic behavior only below 50 K. We also observed a strong correlation between the magnetic and optical behavior of the Co-doped ZnO nanoparticles. Optical diffuse reflectance and absorption spectra exhibit a red shift at room temperature in the absorption band edge with increasing Co-doping. The red shift is attributed to the sp-d exchange interaction between free charge carriers in ZnO band and the localized magnetic moments.

  16. Temperature dependence anomalous dielectric relaxation in Co doped ZnO nanoparticles

    SciTech Connect

    Ansari, Sajid Ali; Nisar, Ambreen; Fatma, Bushara; Khan, Wasi; Chaman, M.; Azam, Ameer; Naqvi, A.H.

    2012-12-15

    Graphical abstract: Display Omitted Highlights: ► We prepared Co doped ZnO by facile gel-combustion method. ► Studied temperature dependent dielectric properties in detail. ► Relaxation time shifts toward the higher temperature as increase in Co content. ► SEM analysis shows formation and agglomeration of nanoparticles. ► Dielectric constants, loss and ac conductivity increases with rise in temperature. ► The dielectric constant, loss and ac conductivity decreases as Co ion increases. -- Abstract: We have reported temperature and frequency dependence of dielectric behavior of nanocrystalline Zn{sub 1−x}Co{sub x}O (x = 0.0, 0.01, 0.05 and 0.1) samples prepared by gel-combustion method. The synthesized samples were examined by X-ray diffraction (XRD), scanning electron microscopy (SEM) and LCR-meter, respectively. The XRD analysis reveals that ZnO has a hexagonal (wurtzite) crystal structure. The morphology and size of the nanoparticles (∼10–25 nm) were observed by SEM for 5% Co doped ZnO sample. In dielectric properties, complex permittivity (ε{sup *} = ε′ − jε″), loss tangent (tan δ) and ac conductivity (σ{sub ac}) in the frequency range 75 kHz to 5 MHz were analyzed with temperature range 150–400 °C. The experimental results indicate that ε′, ε″, tan δ and σ{sub ac} decreases with increase in frequency and temperature. The transition temperature as obtained in dispersion curve of dielectric constant shifts toward higher temperature with increase Co content.

  17. Effect of Co Doping on the Structural, Optical and Magnetic Properties of ZnO Nanoparticles

    SciTech Connect

    Hays, Jason; Reddy, K. M.; Graces, N. Y.; Engelhard, Mark H.; Shutthanandan, V.; Luo, M.; Xu, Changqing; Giles, N. C.; Wang, Chong M.; Thevuthasan, Suntharampillai; Punnoose, Alex

    2007-07-04

    We report the results of a detailed investigation of sol-gel synthesized nanoscale Zn1-xCoxO powders processed at 350 °C with 0 @ x @ 0.12 to understand how the structural, morphological, optical and magnetic properties of ZnO are modified by Co doping, in addition to searching for the theoretically predicated ferromagnetism. With x increasing to 0.03, both lattice parameters a and c of the hexagonal ZnO decreased suggesting substitutional doping of Co at the tetrahedral Zn2+ sites. For x > 0.03, these trends reversed and the lattice showed a gradual expansion as x approached 0.12, probably due to additional interstitial incorporation of Co. Raman spectroscopy measurements showed a rapid change in the ZnO peak positions for x > 0.03 suggesting significant disorder and changes in the ZnO structure, in support of additional interstitial Co doping possibility. Combined x-ray photoelectron spectroscopy (XPS), electron paramagnetic resonance spectroscopy, photoluminescence spectroscopy and diffuse reflectance spectroscopy showed clear evidence for tetrahedrally coordinated high spin Co2+ ions occupying the lattice sites of ZnO host system, which became saturated for x > 0.03. Magnetic measurements showed a paramagnetic behavior in Zn1-xCoxO with increasing antiferromagnetic interactions as x increased to 0.10. Surprisingly, a weak ferromagnetic behavior was observed for the sample with x = 0.12 with a characteristic hysteresis loop showing a coercivity Hc ~ 350 Oe, 25% remanence Mr, a low saturation magnetization Ms ~ 0.04 emu/g and with a Curie temperature Tc ~ 540 K. The XPS data collected from Zn1-xCoxO samples showed a gradual increase in the oxygen concentration, changing the oxygen deficient undoped ZnO to an excess oxygen state for x = 0.12. This indicates that such high Co concentrations and appropriate oxygen stoichiometry may be needed to achieve adequate ferromagnetic exchange coupling between the incorporated Co2+ ions.

  18. Local structure investigation of (Co, Cu) co-doped ZnO nanocrystals and its correlation with magnetic properties

    NASA Astrophysics Data System (ADS)

    Tiwari, N.; Doke, S.; Lohar, A.; Mahamuni, Shailaja; Kamal, C.; Chakrabarti, Aparna; Choudhary, R. J.; Mondal, P.; Jha, S. N.; Bhattacharyya, D.

    2016-03-01

    Pure, Co doped and (Co, Cu) co-doped ZnO nanocrystals have been prepared by wet chemical route at room temperature to investigate the effect of Cu doping in Co doped ZnO nanocrystals . The nanocrystals have initially been characterized by X-ray diffraction, FTIR, Raman, optical absorption and EPR spectroscopy and the results were corroborated with DFT based electronic structure calculations. Magnetic properties of the samples have been investigated by studying their magnetic hysteresis behavior and temperature dependence of susceptibilities. Finally the local structure at the host and dopant sites of the nanocrystals have been investigated by Zn, Co and Cu K edges EXAFS measurements with synchrotron radiation to explain their experimentally observed magnetic properties.

  19. Co and Cu co-doped ZnO epitaxial films—A magnetically soft nano-composite

    NASA Astrophysics Data System (ADS)

    Ney, V.; Venkataraman, V.; Henne, B.; Ollefs, K.; Wilhelm, F.; Rogalev, A.; Ney, A.

    2016-04-01

    A series of Co/Cu co-doped ZnO epitaxial films has been grown on sapphire substrates to investigate the possibilities of tailoring the magnetic properties in functional ZnO-Co/Cu nano-composites. The growth was performed using reactive magnetron sputtering varying the oxygen partial pressure to tune the incorporation of the dopants and the resulting valence state. At high oxygen pressures, Co2+ is formed and the resulting magnetic properties are very similar to phase pure paramagnetic Co-doped ZnO samples. However, the formation of a secondary CuO phase reduces the overall structural quality of the layers and virtually no substitutional incorporation of Cu2+ in ZnO could be evidenced. At low oxygen pressures, a significant fraction of metallic Co and Cu forming nanometer-sized superparamagnetic precipitates of a Co/Cu alloy can be evidenced which are embedded in a ZnO host matrix.

  20. NEXAFS and XMCD studies of single-phase Co doped ZnO thin films.

    PubMed

    Singh, Abhinav Pratap; Kumar, Ravi; Thakur, P; Brookes, N B; Chae, K H; Choi, W K

    2009-05-01

    A study of the electronic structure and magnetic properties of Co doped ZnO thin films synthesized by ion implantation followed by swift heavy ion irradiation is presented using near-edge x-ray absorption fine structure (NEXAFS) and x-ray magnetic circular dichroism (XMCD) measurements. The spectral features of NEXAFS at the Co L(3,2)-edge show entirely different features than that of metallic Co clusters and other Co oxide phases. The atomic multiplet calculations are performed to determine the valence state, symmetry and the crystal field splitting, which show that in the present system Co is in the 2+ state and substituted at the Zn site in tetrahedral symmetry with 10Dq = -0.6 eV. The ferromagnetic character of these materials is confirmed through XMCD spectra. To rule out the possibilities of defect induced magnetism, the results are compared with Ar annealed and Ar-ion implanted pure ZnO thin films. The presented results confirm the substitution of Co at the Zn site in the ZnO matrix, which is responsible for room temperature ferromagnetism. PMID:21825451

  1. Effect of Co doping on the structural and dielectric properties of ZnO nanoparticles

    NASA Astrophysics Data System (ADS)

    Ram, Mast; Bala, Kanchan; Sharma, Hakikat; Negi, N. S.

    2016-05-01

    This paper reports on the synthesis of Co doped Zn1-xCoxO (x= 0.0, 0.01, 0.02, 0.03 and 0.05) nanoparticles by solution combustion method using urea as a fuel. The Structural and dielectric properties of the samples were studied. Crystallite sizes were obtained from X-ray diffraction (XRD) patterns whose values decreased with increase in Co concentration. The XRD study reveals that Co2+ ions substitute the Zn2+ ion without changing the wurtzite structure of pristine ZnO up to Co concentrations of 5%. The dielectric constants, dielectric loss (tanδ) and ac conductivity (σac) were studied as the function of frequency and composition, which have been explained by Maxwell-Wagner type interfacial polarization and discussed Koops phenomenological theory.

  2. Synthesis, structural and optical properties of pure ZnO and Co doped ZnO nanoparticles prepared by the co-precipitation method

    NASA Astrophysics Data System (ADS)

    Devi, P. Geetha; Velu, A. Sakthi

    2016-09-01

    Pure ZnO and Cobalt (Co) doped ZnO nanoparticles (NPs) were synthesized by the co-precipitation method. The synthesized nanoparticles retained the wurtzite hexagonal structure, which was confirmed by X-ray diffraction studies. From FESEM studies, ZnO and Co doped ZnO NPs showed Spherical and nanorod mixed phase and Spherical like morphology, respectively. The amount of dopant (Co2+) incorporated into ZnO sample was determined by EDAX. The FT-IR spectra confirmed the Zn-O stretching bands at 438 and 427 cm-1 for ZnO and Co doped ZnO NPs. From the UV-VIS spectroscopic measurements, the excitonic pecks were found around 376 and 370 nm for the respective samples. The photoluminescence measurements revealed that the broad emission was composed of seven different bands due to zinc vacancies, oxygen vacancies and surface defects. The dynamic light scattering (DLS) and Zeta potential measurements were used to find out the size and surface charges.

  3. Synthesis, structural and optical properties of pure ZnO and Co doped ZnO nanoparticles prepared by the co-precipitation method

    NASA Astrophysics Data System (ADS)

    Devi, P. Geetha; Velu, A. Sakthi

    2016-05-01

    Pure ZnO and Cobalt (Co) doped ZnO nanoparticles (NPs) were synthesized by the co-precipitation method. The synthesized nanoparticles retained the wurtzite hexagonal structure, which was confirmed by X-ray diffraction studies. From FESEM studies, ZnO and Co doped ZnO NPs showed Spherical and nanorod mixed phase and Spherical like morphology, respectively. The amount of dopant (Co2+) incorporated into ZnO sample was determined by EDAX. The FT-IR spectra confirmed the Zn-O stretching bands at 438 and 427 cm-1 for ZnO and Co doped ZnO NPs. From the UV-VIS spectroscopic measurements, the excitonic pecks were found around 376 and 370 nm for the respective samples. The photoluminescence measurements revealed that the broad emission was composed of seven different bands due to zinc vacancies, oxygen vacancies and surface defects. The dynamic light scattering (DLS) and Zeta potential measurements were used to find out the size and surface charges.

  4. Soft x-ray absorption spectroscopy on Co doped ZnO: structural distortions and electronic structure

    NASA Astrophysics Data System (ADS)

    Kowalik, I. A.; Guziewicz, E.; Godlewski, M.; Arvanitis, D.

    2016-05-01

    We present soft x-ray absorption spectra from a series of Co doped ZnO films. We discuss systematic variations of the Co L-edge white line intensity and multiplet features for this series of samples. We document sizeable differences in the electronic state of the Co ionic cores, as well as in the local environment of the host lattice atoms, characterised by means of x-ray absorption spectra at the O K-edge and Zn L-edges. Model calculations allow to correlate the observed effects to small structural distortions of the ZnO lattice.

  5. Ferromagnetism and Conductivity in Hydrogen Irradiated Co-Doped ZnO Thin Films.

    PubMed

    Di Trolio, A; Alippi, P; Bauer, E M; Ciatto, G; Chu, M H; Varvaro, G; Polimeni, A; Capizzi, M; Valentini, M; Bobba, F; Di Giorgio, C; Amore Bonapasta, A

    2016-05-25

    Impressive changes in the transport and ferromagnetic properties of Co-doped ZnO thin films have been obtained by postgrowth hydrogen irradiation at temperatures of 400 °C. Hydrogen incorporation increases the saturation magnetization by one order of magnitude (up to ∼1.50 μB/Co) and increases the carrier density and mobility by about a factor of two. In addition to the magnetic characterization, the transport and structural properties of hydrogenated ZnO:Co have been investigated by Hall effect, local probe conductivity measurements, micro-Raman, and X-ray absorption spectroscopy. Particular care has been given to the detection of Co oxides and metal Co nanophases, whose influence on the increase in the transport and ferromagnetic properties can be excluded on the ground of the achieved results. The enhancement in ferromagnetism is directly related to the dose of H introduced in the samples. On the contrary, despite the shallow donor character of H atoms, the increase in carrier density n is not related to the H dose. These apparently contradictory effects of H are fully accounted for by a mechanism based on a theoretical model involving Co-VO (Co-O vacancy) pairs. PMID:27123761

  6. Investigation of structural and optical properties of ZnO films co-doped with fluorine and indium

    NASA Astrophysics Data System (ADS)

    Keskenler, E. F.; Turgut, G.; Doğan, S.

    2012-07-01

    Undoped ZnO film and ZnO films, which are co-doped with F and In (FIZO) at different concentrations, were synthesized by sol-gel technique and the effects of co-doping of F and In on structural and optical properties of ZnO thin films were investigated. The concentration ratio of [F]/[Zn] was altered from 0.25 to 1.75 with 0.50 step at.% mole and [In]/[Zn] was altered from 0.25 to 1.00 with 0.25 step at.% mole. X-ray diffraction analysis indicates that the films have polycrystalline nature and the (0 0 2) preferred orientation is the stronger peak. No extra phases involving zinc, fluorine and indium compounds were observed even at high F and In content. The grain size of undoped ZnO and FIZO thin films varied between 15 and 20 nm with a small fluctuation. From the SEM images, although the undoped ZnO had a smooth and particle-shaped surface, FIZO films had nanofiber-networks shapes over the surface with average size of 500 nm. The surface morphologies and crystallite sizes for the F and In doped films were slightly different from than those of undoped film. From the optical study, a slight shrinkage of band gap was backwardly observed from 3.36 to 3.25 eV with the increasing of F and In content.

  7. Thermally and optically stimulated radiative processes in Eu and Y co-doped LiCaAlF6 crystal

    NASA Astrophysics Data System (ADS)

    Fukuda, Kentaro; Yanagida, Takayuki; Fujimoto, Yutaka

    2015-06-01

    Yttrium co-doping was attempted to enhance dosimeter performance of Eu doped LiCaAlF6 crystal. Eu doped and Eu, Y co-doped LiCaAlF6 were prepared by the micro-pulling-down technique, and their dosimeter characteristics such as optically stimulated luminescence (OSL) and thermally stimulated luminescence (TSL) were investigated. By yttrium co-doping, emission intensities of OSL and TSL were enhanced by some orders of magnitude. In contrast, scintillation characteristics of yttrium co-doped crystal such as intensity of prompt luminescence induced by X-ray and light yield under neutron irradiation were degraded.

  8. Influence of Li-N and Li-F co-doping on defect-induced intrinsic ferromagnetic and photoluminescence properties of arrays of ZnO nanowires

    NASA Astrophysics Data System (ADS)

    Ghosh, Shyamsundar; Gopal Khan, Gobinda; Varma, Shikha; Mandal, Kalyan

    2012-08-01

    The role of N/F co-doping on the defect-driven room-temperature d0 ferromagnetism in group-I element Li doped ZnO nanowire arrays has been investigated. The ferromagnetic signature of pristine ZnO nanowires has enhanced significantly after Li doping but the Li-N co-doping has found to be more effective in the stabilization and enhancement in room-temperature ferromagnetism in ZnO nanowires. Saturation magnetization in Li-doped ZnO nanowires found to increase from 0.63 to 2.52 emu/g and the Curie temperature rises up to 648 K when 10 at. % N is co-doped with 6 at. % Li. On the other hand, Li-F co-doping leads to exhibit much poor room-temperature ferromagnetic as well as visible luminescence properties. The valance state of the different dopants is estimated by x-ray photoelectron spectroscopy while the photoluminescence spectra indicate the gradual stabilization of Zn vacancy defects or defect complexes in presence of No acceptor states, which is found to be responsible for the enhancement of intrinsic ferromagnetism in ZnO:Li matrix. Therefore, the Li-N co-doping can be an effective parameter to stabilize, enhance, and tune zinc vacancy-induced room-temperature d0 ferromagnetism in ZnO nanowires, which can be an exciting approach to prepare new class of spintronic materials.

  9. A sensitive and label-free photoelectrochemical aptasensor using Co-doped ZnO diluted magnetic semiconductor nanoparticles.

    PubMed

    Li, Hongbo; Qiao, Yunfei; Li, Jing; Fang, Hailin; Fan, Dahe; Wang, Wei

    2016-03-15

    Co-doped ZnO diluted magnetic semiconductor as a novel photoelectric beacon was first constructed for photoelectrochemical (PEC) aptasensor of acetamiprid. The fabricated PEC sensing is based on the specific binding of acetamiprid and its aptamer, which induces the decreasement of enhanced photocurrent produced by the electron donor of quercetin. Co(2+) doping has a beneficial effect in extending the band width of light absorption of ZnO into the visible region and to promote the separation of the photoinduced carriers due to the sp-d exchange interactions existing between the band electrons and the localized d electrons of Co(2+). The fabricated aptasensor was linear with the concentration of acetamiprid in the range of 0.5-800 nmolL(-1) with the detection limit of 0.18 nmolL(-1). The presence of same concentration of other conventional pesticides did not interfere in the detection of acetamiprid and the recovery is between 96.2% and 103.7%. This novel PEC aptasensor has good performances with high sensitivity, good selectivity, low cost and portable features. The strategy of Co-doped ZnO diluted magnetic semiconductor paves a new way to improve the performances of PEC aptasensor. PMID:26436325

  10. Annealing in tellurium-nitrogen co-doped ZnO films: The roles of intrinsic zinc defects

    SciTech Connect

    Tang, Kun Gu, Ran; Gu, Shulin Ye, Jiandong; Zhu, Shunming; Yao, Zhengrong; Xu, Zhonghua; Zheng, Youdou

    2015-04-07

    In this article, the authors have conducted an extensive investigation on the roles of intrinsic zinc defects by annealing of a batch of Te-N co-doped ZnO films. The formation and annihilation of Zn interstitial (Zn{sub i}) clusters have been found in samples with different annealing temperatures. Electrical and Raman measurements have shown that the Zn{sub i} clusters are a significant compensation source to holes, and the Te co-doping has a notable effect on suppressing the Zn{sub i} clusters. Meanwhile, shallow acceptors have been identified in photoluminescence spectra. The N{sub O}-Zn-Te complex, zinc vacancy (V{sub Zn})-N{sub O} complex, and V{sub Zn} clusters are thought to be the candidates as the shallow acceptors. The evolution of shallow acceptors upon annealing temperature have been also studied. The clustering of V{sub Zn} at high annealing temperature is proposed to be a possible candidate as a stable acceptor in ZnO.

  11. Structural and optical properties of highly crystalline Ce, Eu and co-doped ZnO nanorods

    NASA Astrophysics Data System (ADS)

    Murugadoss, G.; Jayavel, R.; Rajesh Kumar, M.

    2015-06-01

    Different concentrations of europium (Eu), cerium (Ce) doped and co-doped ZnO:Eu (1%), Ce (1%) nanorods were successfully synthesized by chemical method using Polyvinylpyrrolidone as a surfactant. Crystalline phase, morphology, functional groups, optical absorption, emission and thermal properties of prepared samples were investigated by X-ray diffraction (XRD), X-ray photoelectron spectrometer (XPS), Scanning electron microscopy (SEM), High-resolution transmission electron microscopy (HR-TEM), Fourier transform infra-red (FT-IR), UV-visible, Photoluminescence (PL) spectrophotometer and thermogravimetry (TG) and differential thermal analysis (DTA) analysis. The XRD study showed high crystalline nature of the products with nanoscale regime. Optical study showed shifting the absorption and emission spectra toward higher wavelength side when increasing the doping concentrations. Mainly, this is first time observed a red emission peak at 660 nm for Ce (3%) doped ZnO. Additionally, co-doped ZnO:Eu (1%), Ce (1%) nanorods were synthesized and studied their optical properties. This work demonstrates that simply modified their optical absorption and emission of ZnO by introducing rare earth ions can be used as an effective electrode material in solar cell applications, optoelectronic devices and photocatalysis analysis.

  12. Highly piezoelectric co-doped AlN thin films for wideband FBAR applications.

    PubMed

    Yokoyama, Tsuyoshi; Iwazaki, Yoshiki; Onda, Yosuke; Nishihara, Tokihiro; Sasajima, Yuichi; Ueda, Masanori

    2015-06-01

    We report piezoelectric materials composed of charge-compensated co-doped (Mg, β)(x)Al(1-x)N (β = Zr or Hf) thin films. The effect of the dopant element into AlN on the crystal structure, and piezoelectric properties of co-doped AlN was determined on the basis of a first-principles calculation, and the theoretical piezoelectric properties were confirmed by experimentally depositing thin films of magnesium (Mg) and zirconium (Zr) co-doped AlN (Mg-Zr-doped AlN). The Mg-Zrdoped AlN thin films were prepared on Si (100) substrates by using a triple-radio-frequency magnetron reactive co-sputtering system. The crystal structures and piezoelectric coefficients (d33) were investigated as a function of the concentrations, which were measured by X-ray diffraction and a piezometer. The results show that the d33 of Mg-Zr-doped AlN at total Mg and Zr concentrations (both expressed as β) of 0.35 was 280% larger than that of pure AlN. The experimentally measured parameter of the crystal structure and d33 of Mg-Zr-doped AlN (plotted as functions of total Mg and Zr concentrations) were in very close agreement with the corresponding values obtained by the first-principle calculations. Thin film bulk acoustic wave resonators (FBAR) employing (Mg,Zr)0.13Al0.87N and (Mg, Hf)0.13 Al0.87N as a piezoelectric thin film were fabricated, and their resonant characteristics were evaluated. The measured electromechanical coupling coefficient increased from 7.1% for pure AlN to 8.5% for Mg-Zr-doped AlN and 10.0% for Mg- Hf-doped AlN. These results indicate that co-doped (Mg, β)(x)Al(1-x)N (β = Zr or Hf) films have potential as piezoelectric thin films for wideband RF applications. PMID:26067035

  13. Studies on the structural and optical properties of zinc oxide nanobushes and Co-doped ZnO self-aggregated nanorods synthesized by simple thermal decomposition route

    SciTech Connect

    Freedsman, Joseph J.; Kennedy, L. John; Kumar, R. Thinesh; Sekaran, G.; Vijaya, J. Judith

    2010-10-15

    Pure and Co-doped zinc oxide nanomaterials were prepared by a simple low temperature synthesis and were characterized by X-ray diffraction (XRD), scanning electron microscopy (SEM), high resolution-transmission electron microscopy (HR-TEM), diffused reflectance spectroscopy (DRS) and electron paramagnetic resonance (EPR) techniques. The results showed the formation of nanobushes that consists of several nanowires for pure ZnO and the nanorods formed by self-aggregation for Co-doped ZnO. The presence of Co{sup 2+} ions replacing some of the Zn{sup 2+} in the ZnO lattice was confirmed by EPR and DRS studies. The mechanism for the formation of self-aggregated and self-aligned ZnO rods after the incorporation of cobalt in the lattice by the building block units is discussed in this study. Morphological studies were carried out using SEM and HR-TEM, which supports the validity of the proposed mechanism for the formation of ZnO nanobushes and Co-doped ZnO nanorods. The synthesized nanomaterials were found to have good optoelectronic properties.

  14. Grain boundary dependency of nonlinear current-voltage characteristics in Pr and Co Doped ZnO Bicrystals

    NASA Astrophysics Data System (ADS)

    Sato, Yukio; Oba, Fumiyasu; Yodogawa, Masatada; Yamamoto, Takahisa; Ikuhara, Yuichi

    2004-02-01

    Pr and Co doped ZnO bicrystals with various types of grain boundaries were fabricated to investigate their current-voltage characteristics. In addition, their grain boundary structures and chemical compositions were investigated using high-resolution transmission electron microscopy and energy-dispersive x-ray spectroscopy. It was found that all the boundaries are atomically joined, but have some precipitates of Pr6O11. Co dopants are distributed over the grain interiors and boundaries, while Pr dopants segregate at the fabricated grain boundaries except for a highly coherent Σ1 boundary. The Σ1 boundary with no Pr segregation shows an almost Ohmic characteristic, and coincidence-site lattice and random boundaries with clear Pr segregations show nonlinear characteristics. The change in the nonlinearity is attributed to the difference of the Pr concentration that is associated with the grain boundary structure.

  15. Effect of thermal treatment on room-temperature ferromagnetism in Co-doped ZnO powders

    NASA Astrophysics Data System (ADS)

    Zhou, Xueyun; Ge, Shihui; Yao, Dongsheng; Zuo, Yalu; Xiao, Yuhua

    2008-09-01

    The Co-doped ZnO powders were synthesized by sol-gel method, and treated at different temperatures (673-873 K) in the presence or absence of NH 3 atmosphere for 0.5 and 2 h, respectively. X-ray diffraction (XRD) and vibrating sample magnetometer (VSM) show that better crystal structure can cause larger ferromagnetism and the second phase (Co 3O 4) is the reason for saturation magnetization decrease of the sample sintered at higher temperature in air. XPS and nuclear magnetic resonance (NMR) prove the existence of Co 2+ ions in the Zn 0.9Co 0.1O and the absence of Co clusters, indicating intrinsic ferromagnetism of the samples treated in air. However, strong ferromagnetism of the samples annealed in NH 3 is ascribed to cobalt nitride formed during annealing.

  16. Morphological evolution and electronic alteration of ZnO nanomaterials induced by Ni/Fe co-doping

    NASA Astrophysics Data System (ADS)

    Fletcher, Cameron; Jiang, Yijiao; Sun, Chenghua; Amal, Rose

    2014-06-01

    Zinc oxide (ZnO) nanocrystals mono- and co-doped with nickel/iron were prepared using a facile solvothermal procedure. A significant change in the surface morphology from nanorods to plate-like nanoparticles was observed with an increase in the dopant concentration. The variations of their optical and electronic properties induced by metal dopants were investigated using a combination of characterization techniques and ab initio calculations. It is found that both nickel and iron atoms have been successfully incorporated into the crystal lattice rather than forming a secondary phase, suggesting good dispersion of dopants within the ZnO matrix. Doping with iron has red-shifted the absorption edges of ZnO towards the visible portion resulting in lower band gap energies with increasing dopant concentration. Evidenced by Raman and EPR spectroscopy, the addition of iron has been shown to promote the formation of more oxygen vacancy and crystal defects within the host lattice as well as increasing the free-electron density of the nanomaterial. The DFT plus Hubbard model calculations confirm that low concentration Ni-doping does not induce band gap narrowing but results in localized states. The calculations show that Fe-doping has the potential to greatly improve the optical absorption characteristics and lead to structural deformation, corroborating the UV-Vis, Raman, and EPR spectra.Zinc oxide (ZnO) nanocrystals mono- and co-doped with nickel/iron were prepared using a facile solvothermal procedure. A significant change in the surface morphology from nanorods to plate-like nanoparticles was observed with an increase in the dopant concentration. The variations of their optical and electronic properties induced by metal dopants were investigated using a combination of characterization techniques and ab initio calculations. It is found that both nickel and iron atoms have been successfully incorporated into the crystal lattice rather than forming a secondary phase

  17. Structural, optical and magnetic properties of Co-doped ZnO nanorods with hidden secondary phases.

    PubMed

    Wang, Xuefeng; Zheng, Rongkun; Liu, Zongwen; Ho, Ho-Pui; Xu, Jianbin; Ringer, Simon P

    2008-11-12

    Co-doped ZnO nanorods (composition: Zn(0.955)Co(0.045)O) were grown by a simple surfactant-assisted hydrothermal technique. The morphological, structural, optical and magnetic properties of the as-prepared nanorods were investigated by means of scanning electron microscopy, high-resolution transmission electron microscopy, x-ray diffraction, x-ray photoelectron spectroscopy, micro-Raman spectroscopy, micro-cathodoluminescence, and vibrating sample magnetometry (VSM). The results showed that the sample had rod-like morphology and that the preferential growth direction was along the c axis. While Co was successfully doped into the ZnO wurtzite lattice structure as revealed by several characterization techniques, hidden secondary phases of Zn(y)Co(3-y)O(4) (0≤y≤1) were also clearly detected by the micro-Raman spectroscopic technique. We propose that the predominant diffusion-limited Ostwald ripening crystal growth mechanism under the hydrothermal coarsening yielded such phase segregation. VSM results showed that the nanorods displayed relatively weak room-temperature ferromagnetism. We suggest that the origin of the ferromagnetism is probably due to the presence of the mixed cation valence of Co via a d-d double-exchange mechanism rather than the real doping effect. It is essential to control the crystal growth mechanism and defect states associated with the ferromagnetism in order to realize the intrinsic diluted magnetic semiconductors. PMID:21832791

  18. Physical study on Cobalt-Indium Co-doped ZnO nanofilms as hydrophobic surfaces

    NASA Astrophysics Data System (ADS)

    Mimouni, R.; Mahdhi, N.; Boubaker, K.; Madouri, A.; Amlouk, M.

    2016-03-01

    The present work reports some physical investigations on (Co,In) codoped zinc oxide nanofilms deposited on glass substrates at 460 °C by the spray pyrolysis technique. The effect of Co and In concentration on the structural, morphological, optical and surface wettability properties have been investigated using X-ray diffraction (XRD) patterns, Raman spectroscopy, SEM, optical measurement, photoluminescence spectroscopy as well as the measurement of hydrophobicity in terms of water contact angle. It is found that all films crystallized in würtzite ZnO phase, with a preferentially orientation towards (002) direction parallel to c-axis. The Raman spectra of the samples exhibit the presence of E2high characteristic mode of würtzite structure with high crystallinity as well as two dominant bands 1LO and 2LO. Also, no additional modes introduced by codopoing have been found. SEM micrographs show the uniform deposition of fine grains on surface films. Thicknesses of films are less than 100 nm. In addition, optical investigations indicate that the band gap narrowing of (Co,In) codoped ZnO thin films is due to the increase in the band tail width. Indeed, PL study indicates that (Co,In) codoped ZnO nanofilms exhibit a large decrease of the UV luminescence, which is assigned to the trapping of photo-generated electrons by both In3+ and Co2+ ions as well as an improvement of charge separation in the ZnO thin films. Finally, the (Co,In) codoping influences the surface wettability property and transform the ZnO character from hydrophilic (θ < 90°) for pure ZnO nanofilm to hydrophobic (θ > 90°) for (Co,In) codoped ZnO ones.

  19. Systematic approach on the fabrication of Co doped ZnO semiconducting nanoparticles by mixture of fuel approach for Antibacterial applications

    NASA Astrophysics Data System (ADS)

    Rajendar, V.; Dayakar, T.; Shobhan, K.; Srikanth, I.; Venkateswara Rao, K.

    2014-11-01

    Zinc oxide (ZnO) is a wide band gap semiconductor (3.2 eV) with a high exciton binding energy (60 meV), where it has wide applications in advanced spintronic devices. The theoretical prediction of room temperature ferromagnetism and also antibacterial activity will be possible through the investigation of diluted magnetic semiconductors (DMS), such as transition metal doped ZnO, especially Cobalt doped ZnO. The aim of the work is the synthesis of Cobalt (Co) doped ZnO nanopowders were prepared Zn1-xCoxO (0 ⩽ x ⩾ 0.09) nanopowders from Sol-Gel auto combustion method have been synthesized with precursors such as Zinc and Cobalt nitrates with the assistance Ammonium acetate & Urea as fuel by increasing the cobalt concentration in zinc oxide and their structural, morphological, optical, Thermal, magnetic and antibacterial properties were studied by X-ray diffraction (XRD), field emission scanning electron microscope (FESEM), Transmission Electron microscope (TEM), UV-visible spectroscopy, thermo gravimetric/differential thermal analysis (TG/DTA) and vibrating sample magneto meter (VSM). From the antibacterial studies, against gram positive Bacillus subtilis bacteria is most abundant bacteria in soil and indoor atmosphere, which affects the stored spintronic devices so that the devices should be made with antibacterial activity of DMS like Co doped ZnO. In this article is found that ZnO:Co nanopowders with higher Co doping level (0.07 and 0.09 wt%) exhibit good antibacterial efficiency. The magnetization curves obtained using vibrating sample magnetometer (VSM) show a sign of strong room temperature ferromagnetic behavior when the Co doping level is 0.05 wt% and a weak room temperature ferromagnetic behavior Co doping level is below 0.07 wt%, and also they found to exhibit antiferromagnetic and paramagnetic properties, when the Co doping levels are 0.07 and 0.09 wt%, respectively, to enhance and increase the special magnetic and antibacterial property for

  20. Structural, linear and nonlinear optical properties of co-doped ZnO thin films

    NASA Astrophysics Data System (ADS)

    Shaaban, E. R.; El-Hagary, M.; Moustafa, El Sayed; Hassan, H. Shokry; Ismail, Yasser A. M.; Emam-Ismail, M.; Ali, A. S.

    2016-01-01

    Different compositions of Co-doped zinc oxide [(Zn(1- x)Co x O) ( x = 0, 0.02, 0.04, 0.06, 0.08 and 0.10)] thin films were evaporated onto highly clean glass substrates by thermal evaporation technique using a modified source. The structural properties investigated by X-ray diffraction revealed hexagonal wurtzite ZnO-type structure. The crystallite size of the films was found to decrease with increasing Co content. The optical characterization of the films has been carried out using spectral transmittance and reflectance obtained in the wavelength range from 300 to 2500 nm. The refractive index has been found to increase with increasing Co content. It was further found that optical energy gap decreases from 3.28 to 3.03 eV with increasing Co content from x = 0 to x = 0.10, respectively. The dispersion of refractive index has been analyzed in terms of Wemple-DiDomenico (WDD) single-oscillator model. The oscillator parameters, the single-oscillator energy ( E o), the dispersion energy ( E d), and the static refractive index ( n 0), were determined. The nonlinear refractive index of the Zn(1- x)Co x O thin films was calculated and revealed well correlation with the linear refractive index and WDD parameters which in turn depend on the density and molar volume of the system.

  1. CL from ZnO nanowires and microneedles Co-doped with N and Mn

    NASA Astrophysics Data System (ADS)

    Herrera, M.; Morales, A.; Díaz, J. A.

    2014-05-01

    Cathodoluminescence (CL) was used to study the luminescence emission of ZnO : N, Mn nanowires and microneedles grown by thermal evaporation. CL spectra acquired at room temperature showed the presence of near band edge and defect-related emissions. The defect related emission comprised two bands centered at 2.28 and 2.5 eV. The first component was attributed to the formation of spinel ZnMn2O4 and the second to the well-known ZnO green emission. CL spectra acquired at 100 K showed two emissions centered at 3.22 and 3.25 eV that were attributed to donor-acceptor pair (DAP) and FA transitions, respectively. It was proposed that substitutional nitrogen (NO) and zinc interstitial (Zni) were acceptor and shallow-donor centers in the DAP transition.

  2. The Electrical Properties of Co-Doped ZnO Thin Films

    SciTech Connect

    Hamid, H. A.; Abdullah, M. J.; Aziz, A. A.

    2010-03-11

    Codoped ZnO thin films were prepared on silicon (111) substrates by cosputtering of aluminium rods and zinc target using DC magnetron sputtering followed by heat treatment at 400 deg. C for 1 hour at different ratios of oxygen and nitrogen gas. Results indicate that gas ratios influenced the film conduction properties, which had the lowest resistivity of 7.985x10{sup -3} cm{sup -3} and highest carrier concentration of 6.89x10{sup 21} cm{sup -3}.

  3. Microstructure, electronic structure and optical properties of combustion synthesized Co doped ZnO nanoparticles

    NASA Astrophysics Data System (ADS)

    Srinatha, N.; Nair, K. G. M.; Angadi, Basavaraj

    2015-10-01

    We report on the microstructure, electronic structure and optical properties of nanocrystalline Zn1-xCoxO (x=0, 0.01, 0.03, 0.05 and 0.07) particles prepared by solution combustion technique using L-Valine as fuel. The detailed structural and micro-structural studies were carried out by XRD, HRTEM and TEM-SAED respectively, which confirms the formation of single phased, nano-sized particles. The electronic structure was determined through NEXAFS and atomic multiplet calculations/simulations performed for various symmetries and valence states of 'Co' to determine the valance state, symmetry and crystal field splitting. The correlations between the experimental NEXAFS spectra and atomic multiplet simulations, confirms that, 'Co' present is in the 2+ valence state and substituted at the 'Zn' site in tetrahedral symmetry with crystal field splitting, 10Dq =-0.6 eV. The optical properties and 'Co' induced defect formation of as-synthesized materials were examined by using diffuse reflectance and Photoluminescence spectroscopy, respectively. Red-shift of band gap energy (Eg) was observed in Zn1-xCoxO samples due to Co (0.58 Å) substitution at Zn (0.60 Å) site of the host ZnO. Also, in PL spectra, a prominent pre-edge peak corresponds to ultraviolet (UV) emission around 360-370 nm was observed with Co concentration along with near band edge emission (NBE) of the wide band gap ZnO and all samples show emission in the blue region.

  4. Enhanced room temperature ferromagnetism in electrodeposited Co-doped ZnO nanostructured thin films by controlling the oxygen vacancy defects

    SciTech Connect

    Simimol, A.; Anappara, Aji A.; Greulich-Weber, S.; Chowdhury, Prasanta; Barshilia, Harish C.

    2015-06-07

    We report the growth of un-doped and cobalt doped ZnO nanostructures fabricated on FTO coated glass substrates using electrodeposition method. A detailed study on the effects of dopant concentration on morphology, structural, optical, and magnetic properties of the ZnO nanostructures has been carried out systematically by varying the Co concentration (c.{sub Co}) from 0.01 to 1 mM. For c.{sub Co }≤ 0.2 mM, h-wurtzite phase with no secondary phases of Co were present in the ZnO nanostructures. For c.{sub Co} ≤ 0.2 mM, the photoluminescence spectra exhibited a decrease in the intensity of ultraviolet emission as well as band-gap narrowing with an increase in dopant concentration. All the doped samples displayed a broad emission in the visible range and its intensity increased with an increase in Co concentration. It was found that the defect centers such as oxygen vacancies and zinc interstitials were the source of the visible emission. The X-ray photoelectron spectroscopy studies revealed, Co was primarily in the divalent state, replacing the Zn ion inside the tetrahedral crystal site of ZnO without forming any cluster or secondary phases of Co. The un-doped ZnO nanorods exhibited diamagnetic behavior and it remained up to a c.{sub Co} of 0.05 mM, while for c.{sub Co }> 0.05 mM, the ZnO nanostructures exhibited ferromagnetic behavior at room temperature. The coercivity increased to 695 G for 0.2 mM Co-doped sample and then it decreased for c.{sub Co }> 0.2 mM. Our results illustrate that up to a threshold concentration of 0.2 mM, the strong ferromagnetism is due to the oxygen vacancy defects centers, which exist in the Co-doped ZnO nanostructures. The origin of strong ferromagnetism at room temperature in Co-doped ZnO nanostructures is attributed to the s-d exchange interaction between the localized spin moments resulting from the oxygen vacancies and d electrons of Co{sup 2+} ions. Our findings provide a new insight for tuning the

  5. Effect of (Fe, Co) co-doping on the structural, electrical and magnetic properties of ZnO nanocrystals prepared by solution combustion method

    NASA Astrophysics Data System (ADS)

    Ram, Mast; Negi, N. S.

    2016-01-01

    The structural, electrical and magnetic properties of Zn1-xCo0.05FexO (where, x=0, 1, 2, 3 and 5 mol%) nanoparticles prepared by solution combustion method are reported. The X-ray diffraction (XRD), scanning electron microscope (SEM) and energy dispersive analysis of X-rays (EDX) have been used for structural and compositional analysis. The X-ray diffraction pattern showed the existence of hexagonal wurtzite structure of parent ZnO with co-doping. The microstructural studies reveal the dense nanostructured morphology of these samples. The DC electrical conductivity measurements have been carried out in the temperature range of 300-450 K. The DC electrical conductivity decreases with the increasing Fe concentration. The magnetic studies reveal room temperature ferromagnetisation in doped ZnO nanoparticles. The magnetic properties of ZnO nanoparticles improve with increasing Fe dopant concentration.

  6. Defects in paramagnetic Co-doped ZnO films studied by transmission electron microscopy

    SciTech Connect

    Kovács, A.; Duchamp, M.; Boothroyd, C. B.; Dunin-Borkowski, R. E.; Ney, A.; Ney, V.; Galindo, P. L.; Kaspar, T. C.; Chambers, S. A.

    2013-12-28

    We study planar defects in epitaxial Co:ZnO dilute magnetic semiconductor thin films deposited on c-plane sapphire (Al{sub 2}O{sub 3}), as well as the Co:ZnO/Al{sub 2}O{sub 3} interface, using aberration-corrected transmission electron microscopy and electron energy-loss spectroscopy. Co:ZnO samples that were deposited using pulsed laser deposition and reactive magnetron sputtering are both found to contain extrinsic stacking faults, incoherent interface structures, and compositional variations within the first 3–4 Co:ZnO layers next to the Al{sub 2}O{sub 3} substrate. The stacking fault density is in the range of 10{sup 17} cm{sup −3}. We also measure the local lattice distortions around the stacking faults. It is shown that despite the relatively high density of planar defects, lattice distortions, and small compositional variation, the Co:ZnO films retain paramagnetic properties.

  7. Synthesis and up-conversion luminescence properties of Ho3+, Yb3+ co-doped BaLa2ZnO5

    NASA Astrophysics Data System (ADS)

    Xie, Jing; Mei, Lefu; Liao, Libing; Guan, Ming; Liu, Haikun

    2015-08-01

    Up-conversion phosphors BaLa2ZnO5 co-doped with Ho3+/Yb3+ were synthesized by high temperature solid-state reaction method. The phase composition of the phosphors was characterized by X-ray diffraction (XRD). The structure of BaLa2ZnO5: 0.75% Ho/15% Yb phosphor was refined by the Rietveld method and results showed the decreased unit cell parameters and cell volume after doping Ho3+ and Yb3+, indicating Ho3+ and Yb3+ have successfully replaced La3+. Under the excitation of 980 nm diode laser, the strong green and weak red up-conversion emissions centered at 548 nm, 664 nm and 758 nm were observed, which originating from 5S2, 5F2→5I8, 5F4→5I8 and 5S2, 5F2→5I7 transitions of Ho3+ ions, respectively. The optimum doping concentrations of Ho3+ and Yb3+ were determined to be 0.75% and 15%, and the corresponding Commission International de L'Eclairage (CIE) coordinates are calculated to be x=0.298 and y=0.692. The related UC mechanism of Ho3+/Yb3+ co-doped BaLa2ZnO5 depending on pump power was studied in detail. The results indicate that BaLa2ZnO5: Ho3+/Yb3+ can be an effective candidate for up-conversion yellowish-green light emitter.

  8. Investigation of structural, surface morphological, optical properties and first-principles study on electronic and magnetic properties of (Ce, Fe)-co doped ZnO

    NASA Astrophysics Data System (ADS)

    Arul Mary, J.; Judith Vijaya, J.; Bououdina, M.; John Kennedy, L.; Daie, J. H.; Song, Y.

    2015-01-01

    We report on the synthesis of ((Zn1-2xCexFex) O (x=0.00, 0.01, 0.02, 0.03, 0.04 and 0.05)) nanoparticles via microwave combustion by using urea as a fuel. To understand how the dopant influenced the structural, magnetic and optical properties of nanoparticles, it was characterized by using X-ray diffraction (XRD), scanning electron microscopy (SEM), energy dispersive X-ray spectroscopy (EDS), diffuse reflectance spectroscopy (DRS), photoluminescence (PL) spectra and vibrating sample magnetometer (VSM). The stability and magnetic properties of Ce and Fe co-doped ZnO were probed by first principle calculations. From the analysis of X-ray diffraction, the samples are identified with the wurtzite crystal structure. The change in lattice parameters, micro-strain, and a small shift in XRD peaks confirms the substitution of co dopants into the ZnO lattice. Morphological investigation of the products revealed the existence of irregular shapes, such as spherical, spherodial and hexagonal. DRS measurements showed a decrease in the energy gap with increasing dopants contents, probably due to an increase in the lattice parameters. PL spectra consist of visible emission, due to the electronic defects, which are related to deep level emissions, such as oxide antisite (OZn), interstitial zinc (Zni), interstitial oxygen (Oi) and zinc vacancy (VZn). Magnetic measurements showed a ferromagnetic behavior for all the doped samples at room temperature. The first principle calculation results showed that the Ce governs the stability, while the Fe adjusts the magnetic characteristics in the Ce and Fe co-doped ZnO.

  9. Al-doped ZnO nanocrystals

    NASA Astrophysics Data System (ADS)

    Kadam, Pratibha; Agashe, Chitra; Mahamuni, Shailaja

    2008-11-01

    Al3+-doped ZnO nanocrystals were differently obtained by wet chemical and an electrochemical route. An increase in forbidden gap due to change in crystal size and also due to Al3+ doping in ZnO is critically analyzed. The Moss-Burstein type shift in Al3+-doped ZnO nanocrystals provides an evidence of successful Al3+ doping in ZnO nanocrystals. The possibility of varying the carrier concentration in ZnO nanocrystals is the indirect implication of the present investigations.

  10. Structural and spectroscopic properties of Li+ co-doped MgAl2O4: Eu3+ nanophosphors

    NASA Astrophysics Data System (ADS)

    Faizan, Mohd.; Ahmad, Shabbir

    2016-05-01

    The red light emitting highly-luminescent Li+ co-doped magnesium aluminates (MgAl2O4: Eu3+) nanophosphors were synthesized by combustion synthesis method. The phosphors were characterized by XRD, FTIR, UV-visible and photoluminescence (PL) spectroscopy. The crystal structure and phase of the phosphors were investigated using XRD. The band gap of pure, Eu3+ doped and Li+ codoped MgAl2O4 phosphor were obtained from the DR spectra using the K-M function F(R∞). The photoluminescence spectra of MgAl2O4:Eu3+ and Li+ codoped MgAl2O4:Eu3+ phosphors were described by well known 5D0-7Fj transitions (J=0, 1, 2, 3, 4). The emission intensity of MgAl2O4:Eu3+ phosphor is enhanced with Li+ codoping.

  11. Synthesis of SrAl2O4:Eu2+ phosphors co-doped with Dy3+, Tb3+, Si4+ and optimization of co-doping amount by response surface method

    NASA Astrophysics Data System (ADS)

    Wang, Huan; Liang, Xiaoping; Liu, Kai; Zhou, Qianqian; Chen, Peng; Wang, Jun; Li, Jianxin

    2016-03-01

    Dy3+ doped SrAl2O4:Eu2+ phosphors were synthesized by high temperature solid phase method in a weak reducing atmosphere (5% H2 + 95% N2). The relationship between the crushed granularity and the phosphors brightness was studied. The effect of co-doping amount of Dy3+, Tb3+ and Si4+ on the structure and properties of SrAl2O4:Eu2+ via response surface method was investigated. Photoluminescence measurement results showed that the initial afterglow brightness of 0.002 mol% Dy3+ doped SrAl2O4:Eu2+0.002 phosphors decreased after first increased within the sintering temperature range from 1150 to 1400 °C, which created the highest value of 12,101 mcd/m2 at 1300 °C. Numerous coarse particles in the powder ought to be crushed for the practical application, however, the brightness became lower accompanied by the decrease of the granularity. The luminescence property of SrAl2O4:Eu2+ sintered at 1200 °C improved by co-doping Dy3+-Tb3+-Si4+. The results of response surface method showed that the influence extent on the luminescence property was Dy3+ > Tb3+ > Si4+. When the co-doping amount in SrAl2O4:Eu2+0.002 phosphors of Dy3+, Tb3+ and Si4+ was 0.001 mol%, 0.0005 mol% and 0.002 mol%, respectively, the initial afterglow brightness of SrAl2O4 was up to the highest value of 12,231 mcd/m2, which was in good agreement on the predicted maximum value of 12,519 mcd/m2 with the optimum co-doping amount of 0.0015 mol% Dy3+, 0.0005 mol% Tb3+ and 0.0017 mol% Si4+. The brightness of co-doped phosphors not only increased by 56.79% than that of SrAl2O4:Eu2+0.002, Dy3+0.002 sintered at 1200 °C, but also was above that of 1300 °C. The emission spectra results showed that, compared with 0.001 mol% Dy3+ doped phosphor, the emission peak of 0.001 mol% Dy3+-0.001 mol% Tb3+ co-doped phosphor generated red shift and increased by 9.3% in emission intensity; 0.001 mol% Dy3+-0.004 mol% Si4+ and 0.001 mol% Dy3+-0.001 mol% Tb3+-0.004 mol% Si4+ co-doped SrAl2O4:Eu2+0.002 emission peak created blue

  12. Li and Ag Co-Doped ZnO Photocatalyst for Degradation of RO 4 Dye Under Solar Light Irradiation.

    PubMed

    Dhatshanamurthi, P; Shanthi, M

    2016-06-01

    The synthesis of Li doped Ag-ZnO (Li-Ag-ZnO) has been successfully achieved by a sonochemically assisted precipitation-decomposition method. The synthesized catalyst was characterized by X-ray diffraction (XRD), transmission electron microscopy (TEM), field emission scanning electron microscopy (FE-SEM), energy dispersive spectroscopy (EDS), diffuse reflectance spectra (DRS), photoluminescence spectra (PL), X-ray photoelectron spectra (XPS) and BET surface area measurements. The photocatalytic activity of Li-Ag-ZnO was investigated for the degradation of Reactive orange 4 (RO 4) dye in aqueous solution under solar light irradiation. Co-dopants shift the absorbance of ZnO to the visible region. Li-Ag-ZnO is found to be more efficient than Ag-ZnO, Li-ZnO, commercial ZnO and prepared ZnO at pH 7 for the mineralization of RO 4 dye under solar light irradiation. The influences of operational parameters such as the amount of photocatalyst, dye concentration, initial pH on photo-mineralization of RO 4 have been analyzed. The mineralization of RO 4 dye has been confirmed by COD measurements. A degradation mechanism is proposed for the degradation of RO 4 under solar light. The catalyst was found to be more stable and reusable. PMID:27427652

  13. Fabrication and characterization of n-type aluminum-boron co-doped ZnO on p-type silicon (n-AZB/p-Si) heterojunction diodes

    SciTech Connect

    Kumar, Vinod; Singh, Neetu; Kapoor, Avinashi; Ntwaeaborwa, Odireleng M.; Swart, Hendrik C.

    2013-11-15

    Graphical abstract: - Highlights: • n-AZB/p-Si heterojunction diodes were formed. • n-AZB/p-Si diode annealed at 700 °C showed best rectifying behavior. • Zn{sub 2}SiO{sub 4} was formed at 800 °C. • n and ϕ{sub b} were estimated to be 1.63 and 0.4 eV, respectively, at 700 °C. • Tailoring of BG was attributed to annealing induced stresses in the films. - Abstract: In this paper, the growth of n-type aluminum boron co-doped ZnO (n-AZB) on a p-type silicon (p-Si) substrate by sol–gel method using spin coating technique is reported. The n-AZB/p-Si heterojunctions were annealed at different temperatures ranging from 400 to 800 °C. The crystallite size of the AZB nanostructures was found to vary from 28 to 38 nm with the variation in annealing temperature. The band gap of the AZB decreased from 3.29 to 3.27 eV, with increasing annealing temperature from 400 to 700 °C and increased to 3.30 eV at 800 °C probably due to the formation of Zn{sub 2}SiO{sub 4} at the interface. The band gap variation is explained in terms of annealing induced stress in the AZB. The n-AZB/p-Si heterojunction exhibited diode behavior. The best rectifying behavior was exhibited at 700 °C.

  14. Effect of Mg2+ ions co-doping on timing performance and radiation tolerance of Cerium doped Gd3Al2Ga3O12 crystals

    NASA Astrophysics Data System (ADS)

    Lucchini, M. T.; Babin, V.; Bohacek, P.; Gundacker, S.; Kamada, K.; Nikl, M.; Petrosyan, A.; Yoshikawa, A.; Auffray, E.

    2016-04-01

    Inorganic scintillators with high density and high light yield are of major interest for applications in medical imaging and high energy physics detectors. In this work, the optical and scintillation properties of Mg co-doped Ce:Gd3Al2Ga3O12 crystals, grown using Czochralski technique, have been investigated and compared with Ce:Gd3Al2Ga3O12 ones prepared with identical technology. Improvements in the timing performance of the Mg co-doped samples with respect to Ce:Gd3Al2Ga3O12 ones have been measured, namely a substantial shortening of the rise time and scintillation decay components and lower afterglow were achieved. In particular, a significantly better coincidence time resolution of 233 ps FWHM, being a fundamental parameter for TOF-PET devices, has been observed in Mg co-doped crystals. The samples have also shown a good radiation tolerance under high doses of γ-rays, making them suitable candidates for applications in harsh radiation environments, such as detectors at future collider experiments.

  15. A clear effect of charge compensation through Na+ co-doping on the luminescence spectra and decay kinetics of Nd3+-doped CaAl4O7

    NASA Astrophysics Data System (ADS)

    Puchalska, M.; Watras, A.

    2016-06-01

    We present a detailed analysis of luminescence behavior of singly Nd3+ doped and Nd3+, Na+ co-doped calcium aluminates powders: Ca1-xNdxAl4O7 and Ca1-2xNdxNaxAl4O7 (x=0.001-0.1). Relatively intense Nd3+ luminescence in IR region corresponding to typical 4F3/2→4IJ (J=9/2-13/2) transitions with maximum located at about 1079 nm was obtained in all samples on direct excitation into f-f levels. The effect of dopant concentration and charge compensation by co-doping with Na+ ions on morphology and optical properties were studied. The results show that both, the Nd3+ concentration and the alkali metal co-doping affected the optical properties but had no influence on the powders morphology. The studies of luminescence spectra (298 and 77 K) in a function of dopant concentration showed an increasing distortion of the local symmetry of Nd3+with raising activator content due to certain defects created in the crystal lattice. On the other hand Na+ addition led to significant narrowing of absorption and luminescence bands and also a reduction of the number of their components, showing smaller disturbance of Nd3+ ions local symmetries. Consequently, charge compensated by Na+ co-doping materials showed significantly enhanced Nd3+ luminescence. The decrease of emission intensity and luminescence lifetimes with increase of activator concentration was attributed mainly to phonon-assisted cross-relaxation processes between Nd3+ ions. Analysis with Inokuti-Hirayama model indicated dipole-dipole mechanism of ion-ion interaction. Na+ addition led to much smaller concentration quenching due to smaller clustering of dopant ions in CaAl4O7 lattice.

  16. Improving the electrochemical properties of Al, Zr Co-doped Li4Ti5O12 as a lithium-ion battery anode material

    NASA Astrophysics Data System (ADS)

    Park, Jung Soo; Baek, Seong-Ho; Park, Yiseul; Kim, Jae Hyun

    2014-05-01

    Li4Ti5O12 and Al3+, Zr4+ co-doped Li(4- x/3)Al x Ti(5-5 x/3)Zr x O12 ( x = 0.01, 0.05, 0.1, 0.15, 0.2) were synthesized at 950 °C via a solid state reaction by using rutile TiO2, Li2 CO3, and Al2O3 as precursors for the anode material of a lithium-ion battery. The average particle sizes of Li(4- x/3)Al x Ti(5-5 x/3)Zr x O12 ( x = 0, 0.01, 0.05, 0.1, 0.15, 0.2) range from 700 to 1200 nm. The particle sizes of pure Li4Ti5O12 and Al3+, Zr4+ co-doped Li4Ti5O12 were not obviously different, but did result in a shift in the (111) peak in X-ray diffraction. Li(4- x/3)Al x Ti(5-5 x/3)Zr x O12 ( x = 0.01) exhibits an excellent rate capability with a reversible capacity of 127.7 mAh/g at a 5 C-rate and even 113.1 mAh/g at a 10 C-rate. The capacity retention was improved remarkably compared to that for an undoped anode when discharged at a high C- rate.

  17. Continuum emission in Nd3+/Yb3+ co-doped Ca12Al14O33 phosphor: Charge transfer state luminescence versus induced optical heating

    NASA Astrophysics Data System (ADS)

    Verma, R. K.; Rai, S. B.

    2013-02-01

    An unusual phenomenon of local heating and associated emission of continuum in lanthanide doped material has attracted much interest currently because of its use in white light generation and in localized heating. In the present work, Nd3+/Yb3+ co-doped Ca12Al14O33 phosphor has been synthesized, which gives broad continuum emission both by downconversion (DC) and upconversion (UC) processes. On 266 nm excitation, broad continuum emission is achieved through charge transfer state (CTS) luminescence of Yb3+ ion. On the other hand on 976 nm excitation, UC emission is observed from Nd3+ ion, which at higher pump power gives continuum emission.

  18. Isoelectronic co-doping

    DOEpatents

    Mascarenhas, Angelo

    2004-11-09

    Isoelectronic co-doping of semiconductor compounds and alloys with deep acceptors and deep donors is used to decrease bandgap, to increase concentration of the dopant constituents in the resulting alloys, and to increase carrier mobilities lifetimes. Group III-V compounds and alloys, such as GaAs and GaP, are isoelectronically co-doped with, for example, N and Bi, to customize solar cells, thermal voltaic cells, light emitting diodes, photodetectors, and lasers on GaP, InP, GaAs, Ge, and Si substrates. Isoelectronically co-doped Group II-VI compounds and alloys are also included.

  19. Efficient green and red upconversion emissions in Er3+/Yb3+ co-doped ZnAl2O4 phosphor obtained by combustion reaction

    NASA Astrophysics Data System (ADS)

    de Camargo, A. S. S.; Nunes, L. A. O.; Silva, J. F.; Costa, A. C. F. M.; Barros, B. S.; Silva, J. E. C.; de Sá, G. F.; Alves, S., Jr.

    2007-06-01

    Thin ceramic powders of zinc aluminate ZnAl2O4 co-doped with Er3+ and Yb3+ were prepared by a combustion reaction and characterized from the spectroscopic point of view, with the aim of investigating the effect and mechanisms of upconversion emissions. The characteristic cubic spinel structure was predominantly formed for all doped samples, and intense upconversion emission was observed in the green and red spectral regions, under 980 nm diode laser excitation. The upconversion mechanism of both emissions was confirmed to involve two photon absorptions and it was found that the efficiencies of the emissions are considerably enhanced by increasing the Yb3+ concentration in relation to Er3+. The results indicate the potential of ZnAl2O4:Er3+,Yb3+ phosphor powders for applications in luminescent display panels and other photonic devices.

  20. Enhancement of optical properties of hydrothermally synthesized TiO2/ZrO2 nanoparticles by Al, Ce Co-doping

    NASA Astrophysics Data System (ADS)

    Tomar, Laxmi J.; Bhatt, Piyush J.; Desai, Rahul K.; Chakrabarty, Bishwajit S.

    2015-06-01

    Al, Ce co-doped TiO2/ZrO2 (TZ) nano composites have been prepared by hydrothermal method. The structural and optical properties of the obtained samples were investigated by X -ray diffraction (XRD) and UV-Visible spectroscopy respectively. It has been found that the crystallite size of all the samples was distributed in the range 9.19 to 17.41 nm. The content of anatase phase varied in the range 48.71 to 100% depending on doping. The dopant produced lattice strain in material and it was found between 0.027 - 0.069. A clear shift of absorption edge for different dopant has been observed from UV-Visible absorption spectra. The change in optical bandgap, refractive index, absorption co efficient and optical conductivity was also evaluated from absorption spectra.

  1. Enhancement of optical properties of hydrothermally synthesized TiO{sub 2}/ZrO{sub 2} nanoparticles by Al, Ce Co-doping

    SciTech Connect

    Tomar, Laxmi J.; Bhatt, Piyush J. Desai, Rahul K.; Chakrabarty, Bishwajit S.

    2015-06-24

    Al, Ce co-doped TiO{sub 2}/ZrO{sub 2} (TZ) nano composites have been prepared by hydrothermal method. The structural and optical properties of the obtained samples were investigated by X –ray diffraction (XRD) and UV-Visible spectroscopy respectively. It has been found that the crystallite size of all the samples was distributed in the range 9.19 to 17.41 nm. The content of anatase phase varied in the range 48.71 to 100% depending on doping. The dopant produced lattice strain in material and it was found between 0.027 - 0.069. A clear shift of absorption edge for different dopant has been observed from UV-Visible absorption spectra. The change in optical bandgap, refractive index, absorption co efficient and optical conductivity was also evaluated from absorption spectra.

  2. Eu2+ and Mn2+ Co-doped BaMgAl10O17 Blue- and Green-Emitting Phosphor: A Luminescence and EPR Study

    NASA Astrophysics Data System (ADS)

    Singh, Vijay; Sivaramaiah, G.; Rao, J. L.; Singh, N.; Srivastava, Anoop K.; Jirimali, H. D.; Li, J.; Gao, H.; Kumaran, R. Senthil; Singh, Pramod K.; Dhoble, S. J.

    2016-06-01

    Eu2+ and Mn2+ co-doped BaMgAl10O17 phosphor has been prepared by a solution combustion method. The structural, morphological and compositional analysis of the BaMgAl10O17:Eu2+ and Mn2+ powders have been studied by x-ray diffraction, scanning electron microscopy and energy dispersive x-ray spectroscopy. The electron paramagnetic resonance (EPR) spectrum exhibited resonance signals with the effective g values of g ≈ 4.88 and g ≈ 1.98. The resonance signal with the effective g value of g ≈ 4.88 is characteristic of Eu2+ ions whereas g ≈ 1.98 is due to Mn2+ ions. The number of spins participating in resonance, Gibbs free energy, magnetic susceptibility, Curie constant, effective magnetic moment, zero-field splitting parameter and hyperfine splitting constant have been evaluated. From optical and EPR correlation, it is inferred that Eu2+ and Mn2+ are present in the BaMgAl10O17 matrix.

  3. Defect related microstructure, optical and photoluminescence behaviour of Ni, Cu co-doped ZnO nanoparticles by co-precipitation method

    NASA Astrophysics Data System (ADS)

    Anbuselvan, D.; Muthukumaran, S.

    2015-04-01

    In the present study Ni-doped ZnO and Ni, Cu-doped ZnO nanoparticles were successfully synthesized by co-precipitation method. Structural studies confirmed the dominant presence of hexagonal wurtzite ZnO phase at lower Cu concentration and CuO phase was observed at higher Cu (Cu = 5%) concentration. The existence of Cu2+ ions were dominant at Cu ⩽ 3% (responsible for lattice shrinkage) and the presence of Cu+ ions were dominant at Cu > 3% (responsible for lattice expansion). The change in UV-visible absorption and energy gap were discussed by secondary phase generation and charge carrier density. The low absorption loss and high transmittance at Cu = 3% doped samples is used as potential candidate for opto-electronic devices. The increase of green band intensity and decrease of UV band at higher Cu concentration confirmed the existence of more defect related states.

  4. Photoluminescence and energy transfer in Tb{sup 3+}/Mn{sup 2+} co-doped ZnAl{sub 2}O{sub 4} glass ceramics

    SciTech Connect

    Lakshminarayana, Gandham; Wondraczek, Lothar

    2011-08-15

    We report on Tb{sup 3+} as efficient sensitizer for red photoemission from Mn{sup 2+}-centers in ZnO-B{sub 2}O{sub 3}-Al{sub 2}O{sub 3}-Si{sub 2}O-Na{sub 2}O-SrO glasses and corresponding gahnite glass ceramics. In comparison to singly or co-doped glasses, the glass ceramics exhibit significantly increased emission intensity. Structural considerations, ESR, and dynamic luminescence spectroscopy indicate partial incorporation of Mn{sup 2+} as well as Tb{sup 3+} into the crystalline phase, the former on octahedral Zn{sup 2+}-sites. Interionic distance and charge transfer probability between both species depend on crystallization conditions. This enables control of the energy transfer process and, hence, tunability of the color of photoemission by simultaneous emission from Tb{sup 3+} and Mn{sup 2+} centers. Concentration quenching in Mn{sup 2+}-singly doped materials was found at a critical dopant concentration of about 1.0 mol%. The energy transfer process was studied in detail by dynamic as well as static luminescence spectroscopy. Spectroscopic results suggest the application of the studied materials as single or dual-mode emitting phosphor for luminescent lighting. - Graphical abstract: In the prepared Tb{sup 3+}/Mn{sup 2+} codoped glass ceramics containing gahnite (ZnAl{sub 2}O{sub 4}) nanocrystals, the luminescence color is changed from green light to yellowish-red light with an increase in Mn{sup 2+} concentration due to enhanced energy transfer from Tb{sup 3+} to Mn{sup 2+} ions. This tunability should have potential applications in solid state lighting to produce white light, which can be obtained by appropriately optimizing the ratio of Tb{sup 3+}/Mn{sup 2+} ions under UV(350 nm) excitation. Highlights: > Photoluminescence from Mn{sup 2+} and Tb{sup 3+} singly and co-doped glasses and gahnite glass ceramics was studied. > Occurrence of energy transfer from Tb{sup 3+} to Mn{sup 2+} was confirmed. > Luminescence color tunability is achieved by varying dopant

  5. Computational discovery of lanthanide doped and Co-doped Y{sub 3}Al{sub 5}O{sub 12} for optoelectronic applications

    SciTech Connect

    Choudhary, Kamal; Chernatynskiy, Aleksandr; Phillpot, Simon R.; Sinnott, Susan B.; Mathew, Kiran; Bucholz, Eric W.; Hennig, Richard G.

    2015-09-14

    We systematically elucidate the optoelectronic properties of rare-earth doped and Ce co-doped yttrium aluminum garnet (YAG) using hybrid exchange-correlation functional based density functional theory. The predicted optical transitions agree with the experimental observations for single doped Ce:YAG, Pr:YAG, and co-doped Er,Ce:YAG. We find that co-doping of Ce-doped YAG with any lanthanide except Eu and Lu lowers the transition energies; we attribute this behavior to the lanthanide-induced change in bonding environment of the dopant atoms. Furthermore, we find infrared transitions only in case of the Er, Tb, and Tm co-doped Ce:YAG and suggest Tm,Ce:YAG and Tb,Ce:YAG as possible functional materials for efficient spectral up-conversion devices.

  6. Enhanced 2 μm broad-band emission and NIR to visible frequency up-conversion from Ho3+/Yb3+ co-doped Bi2O3-GeO2-ZnO glasses.

    PubMed

    Biswas, Kaushik; Sontakke, Atul D; Sen, R; Annapurna, K

    2013-08-01

    In this work, a new and non-conventional oxide glass composition based on Bi2O3-GeO2-ZnO system has been formulated with an aim to realize low phonon oxide glass and elucidate its performance when co-doped with Ho(3+)/Yb(3+) for the energy transfer based NIR emission at 2 μm from Ho(3+) ions under Yb(3+) excitation. The glass with 1.0 mol% Ho2O3 and 0.5 mol% Yb2O3 has exhibited maximum energy transfer rate (3602 s(-1)) and energy transfer efficiency (65.92%). Important radiative properties have been predicted for emission transitions of Ho(3+) ions using intensity parameters derived from measured absorption spectra using standard Judd-Ofelt theory. At lower acceptor ion concentration (0.1 mol%), an efficient NIR to visible up-conversion emission has been observed based on two photon absorption process which has found to be reduced significantly at higher Ho(3+) concentrations with simultaneous enhancement in 2 μm emission. Hence, this newly developed glass codoped with Yb(3+)/Ho(3+) is promising glass for sensitized 2 μm emission applications as broad band tunable lasers because of the combination of low phonon energy (707 cm(-1)), high energy transfer efficiency, moderately high emission cross-section (5.33×10(-21) cm(2)) and larger effective half-width of the emission band value of 169 nm. PMID:23685797

  7. The effect of sulfur and zirconium co-doping on the oxidation of NiCrAl

    NASA Technical Reports Server (NTRS)

    Smialek, James L.

    1988-01-01

    The adhesion behavior of Al2O3 scales formed on NiCrAl+Zr alloys was examined as a function of both sulfur and zirconium doping levels. In general, very high levels of zirconium were required to counteract the detrimental effects of sulfur. A sulfur-zirconium adherence map was constructed, as determined from the oxidation and spalling behavior in 1100 C cyclic tests. For low sulfur alloys (less than 500 ppma), the amount of zirconium required for adherence at any given sulfur level can be described by Zr greater than 600 S(0.2) (in ppma). These results underscore the importance of sulfur to adhesion mechanisms and suggest that sulfur gettering is a first order effect of reactive element additions to MCrAl alloys.

  8. The effect of sulfur and zirconium Co-doping on the oxidation of NiCrAl

    NASA Technical Reports Server (NTRS)

    Smialek, James L.

    1987-01-01

    The adhesion behavior of Al2O3 scales formed on NiCrAl+Zr alloys was examined as a function of both sulfur and zirconium doping levels. In general, very high levels of zirconium were required to counteract the detrimental effects of sulfur. A sulfur-zirconium adherence map was constructed, as determined from the oxidation and spalling behavior in 1100 C cyclic tests. For low sulfur alloys, the amount of zirconium required for adherence at any given sulfur level can be described by Zr greater than 600 S sup 0.2 (in ppma). These results underscore the importance of sulfur to adhesion mechanisms and suggests that sulfur gettering is a first order effect of reactive element additions to MCrAl alloys.

  9. Preparation, structural, photoluminescence and magnetic studies of Cu doped ZnO nanoparticles co-doped with Ni by sol-gel method

    NASA Astrophysics Data System (ADS)

    Theyvaraju, D.; Muthukumaran, S.

    2015-11-01

    Zn0.96-xNi0.04CuxO nanoparticles have been synthesized by varying different Cu concentrations between 0% and 4% using simple sol-gel method. X-ray diffraction studies confirmed the hexagonal structure of the prepared samples. The formation of secondary phases, CuO (111) and Zn (101) at higher Cu content is due un-reacted Cu2+ and Zn2+ ions present in the solution which reduces the interaction between precursor ions and surfaces of ZnO. Well agglomerated and rod-like structure noticed at Cu=4% greatly de-generate and enhanced the particle size. The nominal elemental composition of Zn, Cu, Ni and O was confirmed by energy dispersive X-ray analysis. Even though energy gap was increased (blue-shift) from Cu=0-2% by quantum size effect, the s-d and p-d exchange interactions between the band electrons of ZnO and localized d electrons of Cu and Ni led to decrease (red-shift) the energy gap at Cu=4%. Presence of Zn-Ni-Cu-O bond was confirmed by Fourier transform infrared analysis. Ultraviolet emission by band to band electronic transition and defect related blue emission were discussed by photoluminescence spectra. The observed optical properties concluded that the doping of Cu in the present system is useful to tune the emission wavelength and hence acting as the important candidates for the optoelectronic device applications. Ferromagnetic ordering of Cu=2% sample was enhanced by charge carrier concentration where as the antiferromagnetic interaction between neighboring Cu-Cu ions suppressed the ferromagnetism at higher doping concentrations of Cu.

  10. Energy transfer based photoluminescence spectra of co-doped (Dy3+ + Sm3+): Li2O-LiF-B2O3-ZnO glasses for orange emission

    NASA Astrophysics Data System (ADS)

    Vijayalakshmi, L.; Naveen Kumar, K.; Vijayalakshmi, R. P.

    2016-07-01

    The present paper brings out the results concerning the preparation and optical properties of Sm3+ and Dy3+ each ion separately in different concentrations (0.3, 0.5, 1.0 and 1.5 mol.%) and also together doped (x mol.% Dy3+ + 1.5 mol.% Sm3+): Li2O-LiF-B2O3-ZnO (where x = 0.5, 1.0 and 1.5 mol.%) glasses by a melt quenching method. Structural and thermal properties have been extensively studied for those glasses by XRD and TG/DTA. The compositional analysis has been carried out from FTIR spectral profile. Optical absorption spectral studies were also carried out. Sm3+: LBZ glasses have displayed an intense orange emission at 603 nm (4G5/2 → 6H7/2) with an excitation wavelength at 403 nm and Dy3+: LBZ glasses have shown two emissions located at 485 nm (4F9/2 → 6H15/2; blue) and 574 nm (4F9/2 → 6H13/2; yellow) with an excitation wavelength at 385 nm. Remarkably, it has been identified that the significant increase in the reddish orange emission of Sm3+ ions and diminished yellow emission pertaining to Dy3+ ions in the co-doped LBZ glass system under the excitation of 385 nm which relates to Dy3+ ions. This could be due energy transfer from Dy3+ to Sm3+. The non-radiative energy transfer from Dy3+ to Sm3+ is explained in terms of their emission spectra, donor lifetime, energy level diagram and energy transfer characteristic factors. These significantly enhanced orange emission exhibited glasses could be suggested as potential optical glasses for orange luminescence photonic devices.

  11. Effect of Al and Fe doping in ZnO on magnetic and magneto-transport properties

    NASA Astrophysics Data System (ADS)

    Kumar, Santosh; Deepika; Tripathi, Malvika; Vaibhav, Pratyush; Kumar, Aman; Kumar, Ritesh; Choudhary, R. J.; Phase, D. M.

    2016-12-01

    The structural, magnetic and magneto-transport of undoped ZnO, Zn0.97Al0.03O, Zn0.95Fe0.05O and Zn0.92Al0.03Fe0.05O thin films grown on Si(100) substrate using pulsed laser deposition were investigated. The single phase nature of the films is confirmed by X-ray diffraction and Raman spectroscopy measurements. The possibility of Fe metal cluster in Fe doped/co-doped films is ruled out by Fe 2p core level photoelectron spectra. From O 1s core level spectra it is observed that oxygen vacancy is present in all the films. The undoped ZnO film shows magnetic ordering below ∼175 K, whereas Fe doped/codoped samples show magnetic ordering even at 300 K. The Al doped sample reveals paramagnetic behavior. The magneto-transport measurements suggest that the mobile carriers undergo exchange interaction with local magnetic moments.

  12. [Er3+:Yb3+ co-doped nanocrystals BaGd2ZnO5 of up-conversion optical temperature sensing].

    PubMed

    Liu, Yan-zhou; Yang, Yan-min; Guo, Yan-ming; Zhang, Lian-shui; Mi, Chao; Liu, Lin-lin

    2015-02-01

    By far, the most efficient upconversion nanocrystals luminescence materials BaGd2ZnO5: 4%Yb3+ , 1%Er3+, with stable chemical performance, were prepared by using Sol-gel method. XRD pattern shows that the sample is pure phase, belongs to the orthogonal crystals, and space group is Pbnm; SEM micrograph shows that the prepared sample of the morphology sized around 150 nm is evenly distributed. Samples with 971 nm semiconductor laser excitation produce a strong green emission, visible to the naked eye, and uponversion strength and pump energy relation n = 1.22 is two-photon for the realization of the upconversion emission. They originated from Er3+ ions 2H(11/2)--2H(11/2)-->4I(15/2) and 4S(3/2)-->4I(15/2) transition emission, Er3+ ions main excited state absorption (ESA) process is: 4I(15/2)-->4I(11/2)-->2F(7/2)-->2H(11/2), 4S(3/2), Yb3+ was added because of its large absorption cross section (10(4) cm(-1)) so that it is easy to transfer excitation energy to the E3+ ions which enhance the layout particles number and the energy state of the 1F7/2, thereby enhancing the intensity of the peaks of the spectrum. Fluorescence intensity ratio (FIR) technique based on the green upconversion emission of the sample has been studied because the Er3+ ions 2H(11/2) and 4S(3/2) energy level spacing is small. The electrons at the two levels conform to the Boltzmann distribution which is a function of temperature, and thus the fluorescence intensity ratio of two levels can be used to measure the temperature of the substrate material. This method does not interfere with temperature field of the measured object, and can eliminate the uncertainty of the accuracy; the test has a wide temperature range and reasonable temperature resolution, the pump source used is simple, convenient and inexpensive, and has more commercial values. The temperature range of the samples is from 350 to 800 K, and the highest temperature measuring sensitivity can reach 0.0031 K(1). At the same time, under low

  13. Preparation, structural and optical characterization of ZnO, ZnO: Al nanopowder

    SciTech Connect

    Mohan, R. Raj; Rajendran, K.; Sambath, K.

    2014-01-28

    In this paper, ZnO and ZnO:Al nanopowders have been synthesized by low cost hydrothermal method. Zinc nitrate, hexamethylenetetramine (HMT) and aluminium nitrate are used as precursors for ZnO and AZO with different molar ratios. The structural and optical characterization of doped and un-doped ZnO powders have been investigated by X-ray diffraction (XRD), Scanning electron microscopy (SEM), Energy dispersive X-ray spectroscopy (EDAX), photoluminescence (PL) and ultra violet visible (UV-Vis) absorption studies. The SEM results show that the hydrothermal synthesis can be used to obtain nanoparticles with different morphology. It is observed that the grain size of the AZO nanoparticles increased with increasing of Al concentration. The PL measurement of AZO shows that broad range of green emission around 550nm with high intensity. The green emission resulted mainly because of intrinsic defects.

  14. Structural and photoluminescence properties of Cd and Cu co-doped zinc oxide nanoparticles

    NASA Astrophysics Data System (ADS)

    Samuel, T.; Sujatha, K.; Rao, K. Ramachandra; Rao, M. C.

    2016-05-01

    Cd and Cu co-doped ZnO nanoparticles were synthesized by Polyol method and subsequently have been characterized by their structure, optical and photoluminescence studies. XRD and PSA results revealed the formation of Cd and Cu co-doped ZnO nanoparticles with an average crystallite size of 50 nm and average particle size of 246 nm. From Zeta Potential measurements the Zeta Potential was found to be - 29.2 eV indicating the stability of prepared nanoparticles. From Uv-Vis studies, it is found that the absorption of undoped ZnO is less compared with Cd and Cu co-doped ZnO and the absorbance increases with increase in dopant concentration. Photoluminescence studies revealed that the samples are with high structural and optical quality.

  15. Synthesis and down-conversion luminescence properties of Er3+/Yb3+ co-doped AlF3-PbF2-CaF2 powders

    NASA Astrophysics Data System (ADS)

    Liu, Fangchao; Han, Qun; Liu, Tiegen; Chen, Yaofei; Du, Yang; Yao, Yunzhi

    2015-08-01

    Er3+/Yb3+ co-doped oxy-fluoride powders with varying Er/Yb concentration were prepared by a melt quenching method at various sintering temperature. The effect of the Er/Yb doped concentration and sintering temperature were analyzed by using optical absorption and emission techniques. The Judd-Ofelt theory has been used to evaluate the three intensity parameters (Ωλ, where λ = 2, 4 and 6) and calculate the oscillator strengths (fc). Ultraviolet-to-visible emissions were observed under the excitation of a 325 nm CW laser. It was found that the down-conversion fluorescence intensity changes with the sintering temperature and Er/Yb content ratio, the results were explained with the level transitions in Er3+/Yb3+ co-doped systems. The intensity ratios (intensity of 437 nm as reference) of the luminescence spectra that the samples sintered at various temperature are relevant to Ω6 parameter which indicates the vibration amplitude of the Er-O distance. The sintering temperature also has an influence on the intensity ratios via affecting the thermalization of the excited 4I15/2 level.

  16. Cation distribution in co-doped ZnAl2O4 nanoparticles studied by X-ray photoelectron spectroscopy and 27Al solid-state NMR spectroscopy.

    PubMed

    Duan, Xiulan; Yuan, Duorong; Yu, Fapeng

    2011-06-20

    Co(x)Zn(1-x)Al(2)O(4) (x = 0.01-0.6) nanoparticles were synthesized by the citrate sol-gel method and were characterized by X-ray powder diffraction and transmission electron microscopy to identify the crystalline phase and determine the particle size. X-ray photoelectron spectroscopy and (27)Al solid-state NMR spectroscopy were used to study the distribution of the cations in the tetrahedral and octahedral sites in Co(x)Zn(1-x)Al(2)O(4) nanoparticles as a function of particle size and composition. The results show that all of the as-synthesized samples exhibit spinel-type single phase; the crystallite size of the samples is about 20-50 nm and increases with increasing annealing temperature and decreases with Co-enrichment. Zn(2+) ions are located in large proportions in the tetrahedral sites and in small proportions in the octahedral sites in Co(x)Zn(1-x)Al(2)O(4) nanoparticles. The fraction of octahedral Zn(2+) increases with increasing Co concentration and decreases with increasing particle size. Besides the tetrahedral and octahedral coordinations, the presence of the second octahedrally coordinated Al(3+) ions is observed in the nanoparticles. The change of the inversion parameter (2 times the fraction of Al(3+) ions in tetrahedral sites) with Co concentration and particle size is consistent with that of the Zn fraction in octahedral sites. Analysis of the absorption properties indicates that Co(2+) ions are located in the tetrahedral sites as well as in the octahedral sites in the nanoparticles. The inversion degree of Co(2+) decreases with increasing particle size. PMID:21612229

  17. Semiconducting properties of Al doped ZnO thin films.

    PubMed

    Al-Ghamdi, Ahmed A; Al-Hartomy, Omar A; El Okr, M; Nawar, A M; El-Gazzar, S; El-Tantawy, Farid; Yakuphanoglu, F

    2014-10-15

    Aluminum doped ZnO (AZO) thin films were successfully deposited via spin coating technique onto glass substrates. Structural properties of the films were analyzed by X-ray diffraction, atomic force microscopy (AFM) and energy dispersive X-ray spectroscopy. X-ray diffraction results reveal that all the films are polycrystalline with a hexagonal wurtzite structure with a preferential orientation according to the direction (002) plane. The crystallite size of ZnO and AZO films was determined from Scherrer's formula and Williamson-Hall analysis. The lattice parameters of the AZO films were found to decrease with increasing Al content. Energy dispersive spectroscopy (EDX) results indicate that Zn, Al and O elements are present in the AZO thin films. The electrical conductivity, mobility carriers and carrier concentration of the films are increased with increasing Al doping concentration. The optical band gap (Eg) of the films is increased with increasing Al concentration. The AZO thin films indicate a high transparency in the visible region with an average value of 86%. These transparent AZO films may be open a new avenue for optoelectronic and photonic devices applications in near future. PMID:24840493

  18. Effect of Corrosion by Diluted HCL Solution on the Zno:. AL Texture

    NASA Astrophysics Data System (ADS)

    Shi, Mingji; Wang, Ping; Chen, Lanli

    2012-08-01

    High quality textured ZnO: Al electrode can improve the energy conversion efficiency of silicon based thin film solar cells. ZnO: Al films were deposited under 200W. Different textured surfaces were got when etching ZnO: Al films with diluted HCl solutions of 0.5% for different times. The transmission spectrum, square resistance and atomic force microscopy (AFM) images of the samples were measured. The dependence of corrosion time on the resistivity, transmittance and surface texture of the samples were studied. With the increasing of the corrosion time, the resistivity increased, the transmittance decreased, the root-mean-square roughness first increases, then decreases. High quality textured ZnO: Al electrode was obtained when etching the ZnO: Al film deposited under 200W of sputtering power with diluted HCl solution of 0.5%.

  19. Enhanced photovoltaic performance of quantum dot-sensitized solar cell fabricated using Al-doped ZnO nanorod electrode

    NASA Astrophysics Data System (ADS)

    Raja, M.; Muthukumarasamy, N.; Velauthapillai, Dhayalan; Balasundrapraphu, R.; Senthil, T. S.; Agilan, S.

    2015-04-01

    ZnO and Al doped ZnO nanorods have been successfully synthesized on ITO substrate via solgel dip coating method without using any catalyst. The X-ray diffraction studies showed that the Al doped ZnO samples are of hexagonal wurtzite structure. The Al ions were successfully incorporated into the ZnO lattice. Scanning electron microscopy images reveal that the average diameter of ZnO nanorods and Al doped ZnO nanorods are ∼300 nm and ∼200 nm respectively. The energy dispersive X-ray (EDS) analysis confirmed the presence Al in the ZnO thin films. The CdS quantum dot sensitized Al doped ZnO solar cell exhibited a power conversion efficiency of 1.5%.

  20. Temperature- and frequency-dependent dielectric behaviors of insulator/semiconductor (Al2O3/ZnO) nanolaminates with various ZnO thicknesses

    NASA Astrophysics Data System (ADS)

    Li, Jin; Bi, Xiaofang

    2016-07-01

    Al2O3/ZnO nanolaminates (NLs) with various ZnO sublayer thicknesses were prepared by atomic layer deposition. The Al2O3 sublayers are characterized as amorphous and the ZnO sublayers have an oriented polycrystalline structure. As the ZnO thickness decreases to a certain value, each NL exhibits a critical temperature at which its dielectric constant starts to rise quickly. Moreover, this temperature increases as the ZnO thickness is decreased further. On the other hand, the permittivity demonstrates a large value of several hundred at a frequency  ⩽1000 Hz, followed by a steplike decrease at a higher frequency. The change in the cut-off frequency with ZnO thickness is characterized by a hook function. It is revealed that the Coulomb confinement effect becomes predominant in the dielectric behaviors of the NLs with very thin ZnO. As the ZnO thickness decreases to about the same as or even smaller than the Bohr radius of ZnO, a great change in the carrier concentration and effective mass of ZnO is induced, which is shown to be responsible for the peculiar dielectric behaviors of Al2O3/ZnO with very thin ZnO. These findings provide insight into the prevailing mechanisms to optimize the dielectric properties of semiconductor/insulator laminates with nanoscale sublayer thickness.

  1. Atomic layer deposition of Al-doped ZnO thin films

    SciTech Connect

    Tynell, Tommi; Yamauchi, Hisao; Karppinen, Maarit; Okazaki, Ryuji; Terasaki, Ichiro

    2013-01-15

    Atomic layer deposition has been used to fabricate thin films of aluminum-doped ZnO by depositing interspersed layers of ZnO and Al{sub 2}O{sub 3} on borosilicate glass substrates. The growth characteristics of the films have been investigated through x-ray diffraction, x-ray reflection, and x-ray fluorescence measurements, and the efficacy of the Al doping has been evaluated through optical reflectivity and Seebeck coefficient measurements. The Al doping is found to affect the carrier density of ZnO up to a nominal Al dopant content of 5 at. %. At nominal Al doping levels of 10 at. % and higher, the structure of the films is found to be strongly affected by the Al{sub 2}O{sub 3} phase and no further carrier doping of ZnO is observed.

  2. Fabrication of Al-Doped ZnO Film with High Conductivity Induced by Photocatalytic Activity

    NASA Astrophysics Data System (ADS)

    Hong, Jeongsoo; Katsumata, Ken-ichi; Matsushita, Nobuhiro

    2016-06-01

    We have fabricated Al-doped ZnO films by a spin-spray method, achieving high conductivity by Al-ion doping and photocatalytic activity of the ZnO. The surface morphology of the as-deposited films was varied by changing the Al concentration and addition of citrate ions. As-deposited Al-doped ZnO film without citrate ions showed rod array structure with increasing rod width as the Al concentration was increased. Meanwhile, Al-doped ZnO film deposited with addition of citrate ions changed to exhibit dense and continuous surface morphology with high transmittance of 85%. The lowest resistivity recorded for undoped and Al-doped ZnO film was 2.1 × 10-2 Ω cm and 5.9 × 10-3 Ω cm, after ultraviolet (UV) irradiation. The reason for the decreased resistivity is thought to be that Al-ion doping and the photocatalytic activity of ZnO contributed to improve the conductivity.

  3. Morphological properties of Al-doped ZnO nano/microstructures

    NASA Astrophysics Data System (ADS)

    Kim, Kyung Ho; Umakoshi, Tomoyuki; Abe, Yoshio; Kawamura, Midori; Kiba, Takayuki

    2016-03-01

    We discussed the morphological properties of Al-doped zinc oxide (Al-ZnO) microrods grown on a ZnO seed layer and precipitation particles and compared them with undoped ZnO samples. The ZnO nanorods grown on a ZnO seed layer were dense and perpendicular to the surface of the substrate, i.e., fluorine-doped tin oxide (FTO). In contrast the Al-ZnO grew as larger microrods, and the rods were sparsely and obliquely arranged. Precipitation particles synthesized in the ZnO solution through homogeneous nucleation had flower-like structures assembled from the rods and individual rods with lengths of several micrometers. Al-ZnO precipitation particles consisted of rods with length of several micrometers and hexagonal nanoplates. Fourier transform infrared (FTIR) analysis results showed that the rods and precipitation particles had the good chemical properties of ZnO. Both size and morphology of the rods could be effectively controlled by adding aluminum nitrate (Al(NO3)3) as dopant in the ZnO rod solution.

  4. Study of structural and optical properties of Al doped ZnO nanoparticles

    NASA Astrophysics Data System (ADS)

    Mallika, A. N.; Ramachandra Reddy, A.

    2014-03-01

    This paper reports on the structural and optical properties of Al doped ZnO nanoparticles prepared through sol-gel method using poly vinyl alcohol as chelating agent. Al was effectively doped in ZnO with concentrations up to 6 atomic percent concentrations (at. %). X-ray diffraction (XRD) results revealed that all the samples do not have impurity phase indicating hexagonal wurtzite structure of ZnO formed, the average crystallite sizes were decreased with increasing Al concentrations. A compressive strain was induced with Al doping and was calculated with W-H plot analysis. The morphology of all the samples was studied from Field Emission Scanning Electron Microscope (FE-SEM). The energy band gap of the Al doped samples was estimated from UV-Vis spectrum showed an overall increase. The presence of functional groups and chemical bonding of ZnO with Al doping was confirmed by Fourier Transform Infrared Spectroscopy (FTIR) spectra, and in addition to this, the photoluminescence (PL) properties of Al doped ZnO nanoparticles were studied. This paper reports on the structural and optical properties of Al doped ZnO nanoparticles prepared through sol-gel method using poly vinyl alcohol as chelating agent. Al was effectively doped in ZnO with concentrations up to 6 atomic percent concentrations (at. %). X-ray diffraction (XRD) results revealed that all the samples do not have impurity phase indicating hexagonal wurtzite structure of ZnO formed, the average crystallite sizes were decreased with increasing Al concentrations. A compressive strain was induced with Al doping and was calculated with W-H plot analysis. The morphology of all the samples was studied from Field Emission Scanning Electron Microscope (FE-SEM). The energy band gap of the Al doped samples was estimated from UV-Vis spectrum showed an overall increase. The presence of functional groups and chemical bonding of ZnO with Al doping was confirmed by Fourier Transform Infrared Spectroscopy (FTIR) spectra, and in

  5. Influence Al doped ZnO nanostructure on structural and optical properties

    NASA Astrophysics Data System (ADS)

    Ramelan, Ari Handono; Wahyuningsih, Sayekti; Chasanah, Uswatul; Munawaroh, Hanik

    2016-04-01

    The preparation of Al-doped ZnO (AZO) thin films prepared by the spin-coating method was reported. Preparation of AZO was conducted by annealing treatment at a temperature of 700°C. While the spin-coating process of AZO thin films were done at 2000 and 3000 rpm respectively. The structural properties of ZnO were determined by X- ray diffraction (XRD) analysis. ZnOnanostructure was formed after annealed at atemperature of 400°C.The morphology of ZnO was determined by Scanning Electron Microscopy (SEM) showed the irregular morphology about 30-50µm in size. Al doped on ZnO influenced the optical properties of those material. Increasing Al contain on ZnO cause of shifting to the lower wavelength. The optical properties of the ZnO as well as AZO films showed that higher reflectance on the ultraviolet region so those materials were used as anti-reflecting agent.Al addition significantly enhance the optical transparency and induce the blue-shift in optical bandgap of ZnO films.

  6. Enhanced cathodoluminescence from an amorphous AlN:holmium phosphor by co-doped Gd{sup +3} for optical devices applications

    SciTech Connect

    Maqbool, Muhammad; Kordesch, Martin E.; Kayani, A.

    2009-05-15

    Sputter-deposited thin films of amorphous AlN:Ho (1 at. %) emits in the green (549 nm) region of the visible spectrum under electron excitation. The addition of Gd (1 at. %) in the film enhances the green emission linearly after thermal activation at 900 deg. C for 40 min in a nitrogen atmosphere. The luminescence enhancement saturates when the gadolinium concentration reaches four times the holmium concentration. The optical bandgap of amorphous AlN is about 210 nm, so that the film is transparent in the ultraviolet, allowing us to observe the ultraviolet emission at 313 nm from Gd. No significant quenching of the Gd emission is observed. Energy dispersive x-ray (EDX) spectra confirm the increasing concentration of Gd. X-ray diffraction (XRD) analysis shows no peaks other than those arising from the Si (111) substrate, confirming that the films are amorphous. The enhanced luminescence can be used to make high-efficiency optical devices.

  7. Broadband down-conversion based near infrared quantum cutting in Eu{sup 2+}–Yb{sup 3+} co-doped SrAl{sub 2}O{sub 4} for crystalline silicon solar cells

    SciTech Connect

    Tai, Yuping; Zheng, Guojun; Wang, Hui; Bai, Jintao

    2015-03-15

    Near infrared (NIR) quantum cutting involving the down conversion of an absorbed visible photon to emission of two NIR photons was achieved in SrAl{sub 2}O{sub 4}:0.01Eu{sup 2+}, xYb{sup 3+} (x=0, 1, 2, 5, 10, 20, 30 mol%) samples. The photoluminescence properties of samples in visible and NIR regions were measured to verify the energy transfer (ET) from Eu{sup 2+} to Yb{sup 3+}. The results demonstrated that Eu{sup 2+} was an efficient sensitizer for Yb{sup 3+} in the SrAl{sub 2}O{sub 4} host lattice. According to Gaussian fitting analysis and temperature-dependent luminescence experiments, the conclusion was drawn that the cooperative energy transfer (CET) process dominated the ET process and the influence of charge transfer state (CTS) of Yb{sup 3+} could be negligible. As a result, the high energy transfer efficiency (ETE) and quantum yield (QY) have been acquired, the maximum value approached 73.68% and 147.36%, respectively. Therefore, this down-conversion material has potential application in crystalline silicon solar cells to improve conversion efficiency. - Graphical abstract: Near infrared quantum cutting was achieved in Eu{sup 2+}–Yb{sup 3+} co-doped SrAl{sub 2}O{sub 4} samples. The cooperative energy transfer process dominated energy transfer process and high energy transfer efficiency was acquired. - Highlights: • The absorption spectrum of Eu{sup 2+} ion is strong in intensity and broad in bandwidth. • The spectra of Eu{sup 2+} in SrAl{sub 2}O{sub 4} lies in the strongest region of solar spectrum. • The cooperative energy transfer (CET) dominated the energy transfer process. • The domination of CET is confirmed by experimental analysis. • SrAl{sub 2}O{sub 4}:Eu{sup 2+},Yb{sup 3+} show high energy transfer efficiency and long lifetime.

  8. Resistive switching characteristics of a compact ZnO nanorod array grown directly on an Al-doped ZnO substrate

    NASA Astrophysics Data System (ADS)

    Yoo, E. J.; Shin, J. Y.; Yoon, T. S.; Kang, C. J.; Choi, Y. J.

    2016-07-01

    ZnO’s resistive switching properties have drawn much attention because ZnO has a simple chemical composition and is easy to manipulate. The propulsion mechanism for resistive switching in ZnO is based on a conducting filament that consists of oxygen vacancies. In the case of film structure, the random formation of the conducting filaments occasionally leads to unstable switching characteristics. Limiting the direction in which the conducting filaments are formed is one way to solve this problem. In this study, we demonstrate reliable resistive switching behavior in a device with an Au/compact ZnO nanorod array/Al-doped ZnO structure with stable resistive switching over 105 cycles and a long retention time of 104 s by confining conducting filaments along the boundaries between ZnO nanorods. The restrictive formation of conducting filaments along the boundaries between ZnO nanorods is observed directly using conductive atomic force microscopy.

  9. Electron transport in Al-doped ZnO nanolayers obtained by atomic layer deposition

    NASA Astrophysics Data System (ADS)

    Blagoev, B. S.; Dimitrov, D. Z.; Mehandzhiev, V. B.; Kovacheva, D.; Terziyska, P.; Pavlic, J.; Lovchinov, K.; Mateev, E.; Leclercq, J.; Sveshtarov, P.

    2016-03-01

    Al-doped ZnO thin films with different Al content were prepared by atomic layer deposition (ALD). To carry out thermal ALD, diethyl zinc (DEZ) and tri-methyl aluminium (TMA) were used as Zn and Al precursors, respectively, and water vapor as oxidant. Various numbers n of DEZ and m TMA cycles was used to obtain different [ZnO] n [Al2O3] m films, where n = 100 – 95, m = 1 – 5. The X-ray diffraction analysis showed a predominantly (100) oriented polycrystalline phase for the ZnO:Al films with a low Al content (m = 1 – 3) and an amorphous structure for pure Al2O3. In ZnO:Al with a higher Al content (m = 4 – 6) the (100) reflection disappeared and the (002) peak increased. The resistivity of the films decreased with the increase in the Al content, reaching a minimum of 3.3×10-3 Ω cm at about 1.1 % Al2O3 for the [ZnO]99[Al2O3]2 sample; for higher dopant concentrations, the resistivity increased because of the increased crystal inhomogeneity due to axis reorientation.

  10. Precipitation of ZnO in Al 2O 3-doped zinc borate glass ceramics

    NASA Astrophysics Data System (ADS)

    Masai, Hirokazu; Ueno, Takahiro; Takahashi, Yoshihiro; Fujiwara, Takumi

    2011-10-01

    Crystallization behavior of the oxide semiconductor ZnO in zinc borate glass was investigated. The precipitated crystalline phase of glass ceramics containing a small amount of Al 2O 3 was α-Zn 3B 2O 6 whereas that of the glass ceramics containing a large amount of Al 2O 3 was ZnO. It was found that the c-oriented precipitation of ZnO in a glass ceramic was brought about by the in-plane crystal growth of needle-like ZnO crystallites along the a-axis. Amount of Al 2O 3 that can make glass network affected the coordination state of B 2O 3 in the glass, and a three-coordinated BO 3 unit was preferentially formed in the glass containing a higher amount of Al 2O 3. The present results suggest that crystallization of ZnO from multi-component glass is dominated by the local coordination state of the mother glass.

  11. Large lateral photovoltaic effect observed in nano Al-doped ZnO films

    NASA Astrophysics Data System (ADS)

    Lu, Jing; Wang, Hui

    2011-07-01

    Zinc oxide (ZnO), including a variety of metal-doped ZnO, as one kind of most important photoelectric materials, has been widely investigated and received enormous attention for a series of applications. In this work, we report a new finding which we call as lateral photovoltaic effect (LPE) in a nano Al-doped ZnO (ZAO) film based on ZAO/SiO2/Si homo-heterostructure. This large and stable LPE observed in ZAO is an important supplement to the existing ZnO properties. In addition, all data and analyses demonstrate ZAO film can also be a good candidate for new type position-sensitive detector (PSD) devices.

  12. Gas sensing properties of Al-doped ZnO for UV-activated CO detection

    NASA Astrophysics Data System (ADS)

    Dhahri, R.; Hjiri, M.; El Mir, L.; Bonavita, A.; Iannazzo, D.; Latino, M.; Donato, N.; Leonardi, S. G.; Neri, G.

    2016-04-01

    Al-doped ZnO (AZO) samples were prepared using a modified sol-gel route and charaterized by means of trasmission electron microscopy, x-ray diffraction and photoluminescence analysis. Resistive planar devices based on thick films of AZO deposited on interdigitated alumina substrates were fabricated and investigated as UV light activated CO sensors. CO sensing tests were performed in both dark and illumination condition by exposing the samples to UV radiation (λ  =  400 nm).Under UV light, Al-doped ZnO gas sensors operated at lower temperature than in dark. Furthermore, by photoactivation we also promoted CO sensitivity and made signal recovery of AZO sensors faster. Results demonstrate that Al-doped ZnO might be a promising sensing material for the detection of CO under UV illumination.

  13. Magnetic interactions in the Zn-Co-O system: tuning local structure, valence and carrier type from extremely Co doped ZnO to ZnCo2O4.

    PubMed

    Henne, Bastian; Ney, Verena; Ollefs, Katharina; Wilhelm, Fabrice; Rogalev, Andrei; Ney, Andreas

    2015-01-01

    We have investigated the relation between local structure, valence and carrier type with magnetism in the Zn-Co-O system. Thin films ranging from wurtzite Zn(1-x)Co(x)O (Co:ZnO) to ZnCo2O4 spinel were grown on c-sapphire substrates. On the one hand, the unprecedented doping of x = 0.6 Co in ZnO enables to study the structural and magnetic properties well-above the coalescence limit. On the other hand, the ZnCo2O4 spinel provides a p-type environment. We find a strong correlation between local structure, valence and carrier type throughout the Zn-Co-O system. In contrast to earlier publications neither 60% Co:ZnO nor ZnCo2O4 exhibit any sign of ferromagnetic order despite of the high concentration of magnetic ions and a p-type carrier background. Instead, antiferromagnetic exchange is found to be the predominant magnetic interaction in the Zn-Co-O system. PMID:26578268

  14. Magnetic interactions in the Zn-Co-O system: tuning local structure, valence and carrier type from extremely Co doped ZnO to ZnCo2O4

    PubMed Central

    Henne, Bastian; Ney, Verena; Ollefs, Katharina; Wilhelm, Fabrice; Rogalev, Andrei; Ney, Andreas

    2015-01-01

    We have investigated the relation between local structure, valence and carrier type with magnetism in the Zn-Co-O system. Thin films ranging from wurtzite Zn1−xCoxO (Co:ZnO) to ZnCo2O4 spinel were grown on c-sapphire substrates. On the one hand, the unprecedented doping of x = 0.6 Co in ZnO enables to study the structural and magnetic properties well-above the coalescence limit. On the other hand, the ZnCo2O4 spinel provides a p-type environment. We find a strong correlation between local structure, valence and carrier type throughout the Zn-Co-O system. In contrast to earlier publications neither 60% Co:ZnO nor ZnCo2O4 exhibit any sign of ferromagnetic order despite of the high concentration of magnetic ions and a p-type carrier background. Instead, antiferromagnetic exchange is found to be the predominant magnetic interaction in the Zn-Co-O system. PMID:26578268

  15. Electrical transport in hydrogen-aluminium Co-doped ZnO and Zn{sub 1-x}Mg{sub x}O films: Relation to film structure and composition

    SciTech Connect

    Bikowski, A.; Ellmer, K.

    2013-02-07

    ZnO:Al and Zn{sub 1-x}Mg{sub x}O:Al films have been deposited in Ar/H{sub 2} atmospheres by magnetron sputtering from oxidic targets at two substrate temperatures: room temperature and 300 Degree-Sign C. The electrical transport parameters-carrier concentration, resistivity, and Hall mobility-have been measured and related to the structural properties and the chemical composition. The resistivity {rho} both of ZnO:Al as well as Zn{sub 1-x}Mg{sub x}O:Al films decreases with increasing hydrogen flow for the films deposited at room temperature. The decrease is up to 2 orders of magnitude and in both cases due to an increase of the electron concentration and the Hall mobility and occurred despite the fact, that the films became almost X-ray amorphous with increasing hydrogen content. In contrast to these results, for depositions at 300 Degree-Sign C, the resistivity increases with increasing hydrogen portion in the sputtering atmosphere, more strongly for the Zn{sub 1-x}Mg{sub x}O:Al films (3 orders of magnitude). Based on literature data, it is concluded that the built-in atomic hydrogen acts as a shallow donor at low deposition temperatures, while it becomes deactivated at T{sub sub}= 300 Degree-Sign C by the formation of molecular H{sub 2}.

  16. Tailoring Energy Bandgap of Al Doped ZnO Thin Films Grown by Vacuum Thermal Evaporation Method.

    PubMed

    Vyas, Sumit; Singh, Shaivalini; Chakrabarti, P

    2015-12-01

    The paper presents the results of our experimental investigation pertaining to tailoring of energy bandgap and other associated characteristics of undoped and Al doped ZnO (AZO) thin film by varying the atomic concentration of Al in ZnO. Thin films of ZnO and ZnO doped with Al (1, 3, and 5 atomic percent (at.%)) were deposited on silicon substrate for structural characterization and on glass substrate for optical characterization. The dependence of structural and optical properties of Al doped ZnO on the atomic concentration of Al added to ZnO has been reported. On the basis of the experimental results an empirical formula has been proposed to calculate the energy bandgap of AZO theoretically in the range of 1 to 5 at.% of Al. The study revealed that AZO films are composed of smaller and larger number of grains as compared to pure ZnO counterpart and density of the grains was found to increase as the Al concentration increased (from 1 to 5 at.%). The transmittance in the visible region was greater than 90% and found to increase with increasing Al concentration up to 5 at.%. The optical bandgap was found to increase initially with increase in atomic concentration of Al concentration up to 3 at.% and decrease thereafter with increasing concentration of Al. PMID:26682390

  17. Nitrogen and cobalt co-doped zinc oxide nanowires - Viable photoanodes for hydrogen generation via photoelectrochemical water splitting

    NASA Astrophysics Data System (ADS)

    Patel, Prasad Prakash; Hanumantha, Prashanth Jampani; Velikokhatnyi, Oleg I.; Datta, Moni Kanchan; Hong, Daeho; Gattu, Bharat; Poston, James A.; Manivannan, Ayyakkannu; Kumta, Prashant N.

    2015-12-01

    Photoelectrochemical (PEC) water splitting has been considered as a promising and environmentally benign approach for efficient and economic hydrogen generation by utilization of solar energy. Development of semiconductor materials with low band gap, high photoelectrochemical activity and stability has been of particular interest for a viable PEC water splitting system. In this study, Co doped ZnO, .i.e., (Zn0.95Co0.05)O nanowires (NWs) was selected as the composition for further co-doping with nitrogen by comparing solar to hydrogen efficiency (SHE) of ZnO NWs with that of various compositions of (Zn1-xCox)O NWs (x = 0, 0.05, 0.1). Furthermore, nanostructured vertically aligned Co and N-doped ZnO, .i.e., (Zn1-xCox)O:N NWs (x = 0.05) have been studied as photoanodes for PEC water splitting. An optimal SHE of 1.39% the highest reported so far to the best of our knowledge for ZnO based photoanodes was obtained for the co-doped NWs, (Zn0.95Co0.05)O:N - 600 NWs generated at 600 °C in ammonia atmosphere. Further, (Zn0.95Co0.05)O:N-600 NWs exhibited excellent photoelectrochemical stability under illumination compared to pure ZnO NWs. These promising results suggest the potential of (Zn0.95Co0.05)O:N-600 NWs as a viable photoanode in PEC water splitting cell. Additionally, theoretical first principles study conducted explains the beneficial effects of Co and N co-doping on both, the electronic structure and the band gap of ZnO.

  18. Effect of substrate temperature on the structural and optical properties of ZnO and Al-doped ZnO thin films prepared by dc magnetron sputtering

    NASA Astrophysics Data System (ADS)

    Li, Xue-Yong; Li, Hong-Jian; Wang, Zhi-Jun; Xia, Hui; Xiong, Zhi-Yong; Wang, Jun-Xi; Yang, Bing-Chu

    2009-01-01

    ZnO and Al-doped ZnO(ZAO) thin films have been prepared on glass substrates by direct current (dc) magnetron sputtering from 99.99% pure Zn metallic and ZnO:3 wt%Al 2O 3 ceramic targets, the effects of substrate temperature on the crystallization behavior and optical properties of the films have been studied. It shows that the surface morphologies of ZAO films exhibit difference from that of ZnO films, while their preferential crystalline growth orientation revealed by X-ray diffraction remains always the (0 0 2). The optical transmittance and photoluminescence (PL) spectra of both ZnO and ZAO films are obviously influenced by the substrate temperature. All films exhibit a transmittance higher than 86% in the visible region, while the optical transmittance of ZAO films is slightly smaller than that of ZnO films. More significantly, Al-doping leads to a larger optical band gap ( Eg) of the films. It is found from the PL measurement that near-band-edge (NBE) emission and deep-level (DL) emission are observed in pure ZnO thin films. However, when Al was doped into thin films, the DL emission of the thin films is depressed. As the substrate temperature increases, the peak of NBE emission has a blueshift to region of higher photon energy, which shows a trend similar to the Eg in optical transmittance measurement.

  19. Formation of Al-doped ZnO thin films on glass by sol-gel process and characterization

    NASA Astrophysics Data System (ADS)

    Shahid, M. U.; Deen, K. M.; Ahmad, A.; Akram, M. A.; Aslam, M.; Akhtar, W.

    2016-02-01

    In this study, pure ZnO and Al-doped ZnO thin films were developed on glass by sol-gel process followed by drying and annealing in air at 170 and 400 °C, respectively. The surface morphology and structural characteristics were determined through scanning electron microscopy, atomic force microscopy and X-ray diffraction. The Fourier transform infrared spectroscopy validated the formation of Al-doped ZnO film on glass substrate. It was evaluated that 1 at% aluminum (Al) doping in ZnO film showed low electrical resistivity and higher charge carrier concentration due to uniformly dispersed regular shape crystallites as compared to pure ZnO and 2 at% `Al'-doped thin films.

  20. Al-doped ZnO nanocoatings obtained by sol-gel route

    NASA Astrophysics Data System (ADS)

    Mihaiu, S.; Toader, A.; Atkinson, I.; Anastasescu, M.; Vasilescu, M.; Zaharescu, M.; Plugaru, R.

    2010-11-01

    In recent years aluminum doped zinc oxide (AZO) film has attracted more attention due to many advantages including low cost, non-toxicity, and high stability to H2 plasma in comparison with indium tin oxide (ITO) film, the best known and used transparent conductive oxide (TCO) film. In this work, mono and multilayer Al-doped ZnO coatings have been obtained by dip coating sol-gel method on the glass and silicon supports. X-ray Diffraction, Atomic Force Microscopy (AFM) and Fluorescence Spectroscopy were used for the structural, morphological and optical characterization of the obtained coatings. The multilayer Al-doped ZnO coatings (after five layer depositions) on the silicon substrate present a polycrystalline wurtzite type structure with crystallite size of 20 nm. The AFM measurements have shown that no matter the support type, the Al-doped ZnO coatings present a similar morphology consisting in a smooth distribution of the circular grains leading also to similar values of the RMS roughness, around 2 nm. The photoluminescence properties of the Al-doped ZnO coatings depend on the number of depositions and type of substrate. Systematic study performed allows finding most suitable parameters for obtaining coatings with desired properties.

  1. Co-doped spinels: promising materials for solid state lasers

    NASA Astrophysics Data System (ADS)

    Kuleshov, Nickolai V.; Mikhailov, Victor P.; Scherbitsky, V. G.

    1994-07-01

    Optical absorption, luminescence, saturation of absorption and lifetime measurements have been carried out on Co-doped MgAl2O4 and ZnGa2O4. The crystal field parameters are estimated for the tetrahedral Co2+ ion. Three luminescence bands observed in the visible and near infrared are assigned to transitions from the 4T1(4P) level to the lower levels 4A2(4F), 4T2(4F), and 4T1(4F), respectively. Strong luminescence quenching due to nonradiative decay processes is observed MgAl2O4:Co. Saturation of Co2+ absorption at 540 nm is measured and the absorption cross section is estimated to be 2.1 + 0.2 X 10-19 cm2 in MgAl2O4.

  2. Growth and optical properties of ZnO nanorod arrays on Al-doped ZnO transparent conductive film

    PubMed Central

    2013-01-01

    ZnO nanorod arrays (NRAs) on transparent conductive oxide (TCO) films have been grown by a solution-free, catalyst-free, vapor-phase synthesis method at 600°C. TCO films, Al-doped ZnO films, were deposited on quartz substrates by magnetron sputtering. In order to study the effect of the growth duration on the morphological and optical properties of NRAs, the growth duration was changed from 3 to 12 min. The results show that the electrical performance of the TCO films does not degrade after the growth of NRAs and the nanorods are highly crystalline. As the growth duration increases from 3 to 8 min, the diffuse transmittance of the samples decreases, while the total transmittance and UV emission enhance. Two possible nanorod self-attraction models were proposed to interpret the phenomena in the sample with 9-min growth duration. The sample with 8-min growth duration has the highest total transmittance of 87.0%, proper density about 75 μm−2, diameter about 26 nm, and length about 500 nm, indicating that it can be used in hybrid solar cells. PMID:23566567

  3. Electrical and optical properties of in and Al doped ZnO thin film

    NASA Astrophysics Data System (ADS)

    Park, Sang-Uk; Koh, Jung-Hyuk

    2013-07-01

    In this study, to improve the electrical and optical properties of aluminium (Al) doped zinc oxide thin films, we have added small amounts of indium (In) to Al doped ZnO thin films. We will present the results of In and Al doped ZnO thin film on glass substrates prepared by the sol-gel processing method. A rapid thermal annealing process was applied to cure the thin film properties. Different amounts of In were used to dope the AZO thin films to find the optimum process condition. The effects of crystallinity were analyzed by an x-ray diffraction method. In addition, the optical transmittance and electrical proprties of In doped AZO thin films were investigated.

  4. Origins of low resistivity in Al ion-implanted ZnO bulk single crystals

    SciTech Connect

    Oga, T.; Izawa, Y.; Kuriyama, K.; Kushida, K.; Kinomura, A.

    2011-06-15

    The origins of low resistivity in Al ion-implanted ZnO bulk single crystals are studied by combining Rutherford backscattering spectroscopy (RBS), nuclear reaction analysis (NRA), photoluminescence (PL), and Van der Pauw methods. The Al-ion implantation (peak concentration: 2.6 x 10{sup 20}cm{sup -3}) into ZnO is performed using a multiple-step energy. The resistivity decreases from {approx}10{sup 4{Omega}} cm for un-implanted ZnO to 1.4 x 10{sup -1{Omega}} cm for as-implanted, and reaches 6.0 x 10{sup -4{Omega}} cm for samples annealed at 1000 deg. C. RBS and NRA measurements for as-implanted ZnO suggest the existence of the lattice displacement of Zn (Zn{sub i}) and O (O{sub i}), respectively. After annealing at 1000 deg. C, the Zn{sub i} related defects remain and the O{sub i} related defects disappear. The origin of the low resistivity in the as-implanted sample is attributed to the Zn{sub i} ({approx}30 meV [Look et al., Phys. Rev. Lett. 82, 2552 (1999)]). In contrast, the origin of the low resistivity in the sample annealed at 1000 deg. C is assigned to both of the Zn{sub i} related defects and the electrically activated Al donor. A new PL emission appears at around 3.32 eV after annealing at 1000 deg. C, suggesting electrically activated Al donors.

  5. Effect of seed layer on the self assembly of spray pyrolyzed Al-doped ZnO nanoparticles

    NASA Astrophysics Data System (ADS)

    Dwivedi, Charu; Dutta, V.

    2013-03-01

    Al-doped ZnO (AlZO) nanorod arrays and nanostructures were fabricated on seed coated glass substrates via CoSP (Continuous Spray Pyrolysis) reactor. The as-synthesized aluminium doped ZnO nanoparticles and nanorods were analyzed through different characterization techniques. There were no significant changes found in the structure with doping of Al but the morphology of the film changed to branched nanorods and nanosheets with the change in seed solution and annealing temperature, respectively. Also, the current-voltage curves of the ZnO and AZO nanorod arrays was measured and it was found that the current response of AZO nanorods was higher than that of ZnO nanorods, proving the Al incorporation as a dopant.

  6. Fabrication and characterization of silicon wire solar cells having ZnO nanorod antireflection coating on Al-doped ZnO seed layer

    PubMed Central

    2012-01-01

    In this study, we have fabricated and characterized the silicon [Si] wire solar cells with conformal ZnO nanorod antireflection coating [ARC] grown on a Al-doped ZnO [AZO] seed layer. Vertically aligned Si wire arrays were fabricated by electrochemical etching and, the p-n junction was prepared by spin-on dopant diffusion method. Hydrothermal growth of the ZnO nanorods was followed by AZO film deposition on high aspect ratio Si microwire arrays by atomic layer deposition [ALD]. The introduction of an ALD-deposited AZO film on Si wire arrays not only helps to create the ZnO nanorod arrays, but also has a strong impact on the reduction of surface recombination. The reflectance spectra show that ZnO nanorods were used as an efficient ARC to enhance light absorption by multiple scattering. Also, from the current-voltage results, we found that the combination of the AZO film and ZnO nanorods on Si wire solar cells leads to an increased power conversion efficiency by more than 27% compared to the cells without it. PMID:22222067

  7. Plasma versus thermal annealing for the Au-catalyst growth of ZnO nanocones and nanowires on Al-doped ZnO buffer layers

    NASA Astrophysics Data System (ADS)

    Güell, Frank; Martínez-Alanis, Paulina R.; Roso, Sergio; Salas-Pérez, Carlos I.; García-Sánchez, Mario F.; Santana, Guillermo; Marel Monroy, B.

    2016-06-01

    We successfully synthesized ZnO nanocones and nanowires over polycrystalline Al-doped ZnO (AZO) buffer layers on fused silica substrates by a vapor-transport process using Au-catalyst thin films. Different Au film thicknesses were thermal or plasma annealed in order to analyze their influence on the ZnO nanostructure growth morphology. Striking differences have been observed. Thermal annealing generates a distribution of Au nanoclusters and plasma annealing induces a fragmentation of the Au thin films. While ZnO nanowires are found in the thermal-annealed samples, ZnO nanocones and nanowires have been obtained on the plasma-annealed samples. Enhancement of the preferred c-axis (0001) growth orientation was demonstrated by x-ray diffraction when the ZnO nanocones and nanowires have been grown over the AZO buffer layer. The transmittance spectra of the ZnO nanocones and nanowires show a gradual increase from 375 to 900 nm, and photoluminescence characterization pointed out high concentration of defects leading to observation of a broad emission band in the visible range from 420 to 800 nm. The maximum emission intensity peak position of the broad visible band is related to the thickness of the Au-catalyst for the thermal-annealed samples and to the plasma power for the plasma-annealed samples. Finally, we proposed a model for the plasma versus thermal annealing of the Au-catalyst for the growth of the ZnO nanocones and nanowires. These results are promising for renewable energy applications, in particular for its potential application in solar cells.

  8. Preparation of superior lubricious amorphous carbon films co-doped by silicon and aluminum

    NASA Astrophysics Data System (ADS)

    Liu, Xiaoqiang; Hao, Junying; Yang, Jun; Zheng, Jianyun; Liang, Yongmin; Liu, Weimin

    2011-09-01

    Silicon (Si) and aluminum (Al) co-doped amorphous carbon films ((Si, Al)-C:H) were deposited on Si and stainless steel substrates by radio frequency (13.56 MHz) magnetron sputtering. The Al and Si were found to jointly regulate the hybridized carbon bonds. Mechanical properties of the films were detected by nano-indention and scratch tests. The nano-indention results revealed that all the samples exhibited good elastic recovery rate, among which the highest one was beyond 84%. Besides co-regulating the hybridizations of carbon, the co-doped Si and Al also had a common regulation on the mechanical and tribological properties. Especially, the film containing 1.6 at. % of Si and 0.9 at. % of Al showed a super-low friction (< 0.01) and a superior wear resistance in ambient air.

  9. Electrical and optical properties of Al-doped ZnO and ZnAl2O4 films prepared by atomic layer deposition

    PubMed Central

    2013-01-01

    ZnO/Al2O3 multilayers were prepared by alternating atomic layer deposition (ALD) at 150°C using diethylzinc, trimethylaluminum, and water. The growth process, crystallinity, and electrical and optical properties of the multilayers were studied with a variety of the cycle ratios of ZnO and Al2O3 sublayers. Transparent conductive Al-doped ZnO films were prepared with the minimum resistivity of 2.4 × 10−3 Ω·cm at a low Al doping concentration of 2.26%. Photoluminescence spectroscopy in conjunction with X-ray diffraction analysis revealed that the thickness of ZnO sublayers plays an important role on the priority for selective crystallization of ZnAl2O4 and ZnO phases during high-temperature annealing ZnO/Al2O3 multilayers. It was found that pure ZnAl2O4 film was synthesized by annealing the specific composite film containing alternative monocycle of ZnO and Al2O3 sublayers, which could only be deposited precisely by utilizing ALD technology. PMID:23537274

  10. Growth and properties of electrodeposited transparent Al-doped ZnO nanostructures

    NASA Astrophysics Data System (ADS)

    Baka, O.; Mentar, L.; Khelladi, M. R.; Azizi, A.

    2015-12-01

    Al-doped zinc oxide (AZO) nanostructures were fabricated on fluorine-doped tin-oxide (FTO)- coated glass substrates by using electrodeposition. The effects of the doping concentration of Al on the morphological, microstructural, electrical and optical properties of the nanostructures were investigated. From the field emission scanning electron microscopy (FE-SEM) observation, when the amount of Al was increased in the solution, the grains size was observed to decreases. The observed changes in the morphology indicate that Al acts as nucleation centers in the vacancy sites of ZnO and destroys the crystalline structure at high doping level. Effectively, the X-ray diffraction (XRD) analysis indicated that the undoped and the doped ZnO nanostructures has a polycrystalline nature and a hexagonal wurtzite structure with a (002) preferential orientation. The photoluminescence (PL) room-temperature measurements showed that the incorporation of Al in the Zn lattice can improve the intensity of ultraviolet (UV) emission, thus suggesting its greater prospects for use in UV optoelectronic devices.

  11. Atomic scattering spectroscopy for determination of the polarity of semipolar AlN grown on ZnO

    SciTech Connect

    Kobayashi, Atsushi; Ohta, Jitsuo; Ueno, Kohei; Oshima, Masaharu; Fujioka, Hiroshi

    2013-11-04

    Determination of the polarity of insulating semipolar AlN layers was achieved via atomic scattering spectroscopy. The back scattering of neutralized He atoms on AlN surfaces revealed the atomic alignment of the topmost layers of semipolar AlN and the ZnO substrate. Pole figures of the scattering intensity were used to readily determine the polarity of these wurtzite-type semipolar materials. In addition, we found that +R-plane AlN epitaxially grows on −R-plane ZnO, indicating that the polarity flips at the semipolar AlN/ZnO interface. This polarity flipping is possibly explained by the appearance of −c and m-faces on the −R ZnO surfaces, which was also revealed by atomic scattering spectroscopy.

  12. Silicon passivation and tunneling contact formation by atomic layer deposited Al2O3/ZnO stacks

    NASA Astrophysics Data System (ADS)

    Garcia-Alonso, D.; Smit, S.; Bordihn, S.; Kessels, W. M. M.

    2013-08-01

    The passivation of Si by Al2O3/ZnO stacks, which can serve as passivated tunneling contacts or heterojunctions in silicon photovoltaics, was investigated. It was demonstrated that stacks with Al2O3 thicknesses >3 nm lead to lower surface recombination velocities (Seff,max < 4 cm s-1) on n- and p-type Si than single-layer Al2O3 films for a wide range of ZnO thicknesses and irrespective of Al-doping of the ZnO. Stacks with an Al2O3 thickness of 1-2 nm were found to combine reasonable surface passivation (Seff,max = 100-700 cm s-1) with sufficiently high tunneling current densities (10-300 mA cm-2 at 700 mV).

  13. Study of properties of (Mg, Al)-codoped ZnO with GGA and mBJ approximations

    NASA Astrophysics Data System (ADS)

    Khuili, Mohamed; Fazouan, Nejma; El Makarim, Hassna Abou; Atmani, El Houssine

    2016-08-01

    The physical properties of the codoped ZnO system Zn 1 - x - yMgxAly O were studied using a Gaussian and plane waves basis set method implemented in CP2K code, combined to the modified Becke-Johnson potential approximation implemented in the Wien2k code. We have found that the magnesium doped ZnO enhances the optical properties and induces a blue shift in the optical band gap, but reduces its electrical properties. The incorporation of a low Mg concentration in Al doped ZnO achieves a good electrical conductivity and high transmittance. These results make this material a suitable candidate for electronic transparent devices.

  14. Defects in semipolar (1122) ZnO grown on (112) LaAlO3/(La,Sr)(Al,Ta)O3 substrate by pulsed laser deposition.

    PubMed

    Tian, Jr-Sheng; Wu, Yue-Han; Peng, Chun-Yen; Chiu, Kun-An; Shih, Yi-Sen; Do, Hien; Lin, Pei-Yin; Ho, Yen-Teng; Chu, Ying-Hao; Chang, Li

    2013-03-27

    The microstructure of semipolar [Formula: see text] ZnO deposited on (112) LaAlO3/(La,Sr)(Al,Ta)O3 was investigated by transmission electron microscopy. The ZnO shows an in-plane epitaxial relationship of [Formula: see text] with oxygen-face sense polarity. The misfit strain along [Formula: see text] and [Formula: see text] is relieved through the formation of misfit dislocations with the Burgers vectors [Formula: see text] and [Formula: see text], respectively. The line defects in the semipolar ZnO are predominantly perfect dislocations, and the dislocation density decreases with increasing ZnO thickness as a result of dislocation reactions. Planar defects were observed to lie in the M-plane and extend along 〈0001〉, whereas basal stacking faults were rarely found. PMID:23449009

  15. Transparent conductive Al-doped ZnO thin films grown at room temperature

    SciTech Connect

    Wang Yuping; Lu Jianguo; Bie Xun; Gong Li; Li Xiang; Song Da; Zhao Xuyang; Ye Wenyi; Ye Zhizhen

    2011-05-15

    Aluminum-doped ZnO (ZnO:Al, AZO) thin films were prepared on glass substrates by dc reactive magnetron sputtering from a Zn-Al alloy target at room temperature. The effects of the Ar-to-O{sub 2} partial pressure ratios on the structural, electrical, and optical properties of AZO films were studied in detail. AZO films grown using 100:4 to 100:8 Ar-to-O{sub 2} ratio result in acceptable quality films with c-axis orientated crystals, uniform grains, 10{sup -3} {Omega} cm resistivity, greater than 10{sup 20} cm{sup -3} electron concentration, and high transmittance, 90%, in the visible region. The lowest resistivity of 4.11x10{sup -3} {Omega} cm was obtained under the Ar-to-O{sub 2} partial pressure ratio of 100:4. A relatively strong UV emission at {approx}3.26 eV was observed in the room-temperature photoluminescence spectrum. X-ray photoelectron spectroscopy analysis confirmed that Al was introduced into ZnO and substitutes for Zn and doped the film n-type.

  16. Structural and Morphological Properties of Al doped ZnO Nanoparticles

    NASA Astrophysics Data System (ADS)

    Akdağ, A.; Budak, H. F.; Yılmaz, M.; Efe, A.; Büyükaydın, M.; Can, M.; Turgut, G.; Sönmez, E.

    2016-04-01

    Zinc oxide nanoparticles have a wide area of use because of their unique properties such as catalytic, electrical, and optical properties and low cost. Since the suitable additive materials can be changed the electrical and optical properties of zinc oxide, the demand of the industrial commercial area to the zinc oxide increased. In this study, Al doped ZnO nanoparticles produced by using the methods of reduction thought having materials of the Zn(NO)3, AlCl3 and NaOH. XRD, SEM and EDS used for making analyzing of structural and dimensional of particles. The analyses show that the large amount of the Al3+ ions did nut substitute with Zn2+ successfully with the reduction method. XRD and EDS results confirm this situation.

  17. Exploration of Al-Doped ZnO in Photovoltaic Thin Films

    NASA Astrophysics Data System (ADS)

    Ciccarino, Christopher; Sahiner, M. Alper

    The electrical properties of Al doped ZnO-based thin films represent a potential advancement in the push for increasing solar cell efficiency. Doping with Aluminum will theoretically decrease resistivity of the film and therefore achieve this potential as a viable option in the P-N junction phase of photovoltaic cells. The n-type semi-conductive characteristics of the ZnO layer will theoretically be optimized with the addition of Aluminum carriers. In this study, Aluminum doping concentrations ranging from 1-3% by mass were produced, analyzed, and compared. Films were developed onto ITO coated glass using the Pulsed Laser Deposition technique. Target thickness was 250 nm and ellipsometry measurements showed uniformity and accuracy in this regard. Active dopant concentrations were determined using Hall Effect measurements. Efficiency measurements showed possible applications of this doped compound, with upwards of 7% efficiency measured, using a Keithley 2602 SourceMeter set-up. XRD scans showed highly crystalline structures, with effective Al intertwining of the hexagonal wurtzile ZnO molecular structure. This alone indicates a promising future of collaboration between these two materials.

  18. Temperature dependent dual hydrogen sensor response of Pd nanoparticle decorated Al doped ZnO surfaces

    SciTech Connect

    Gupta, D.; Barman, P. B.; Hazra, S. K.; Dutta, D.; Kumar, M.; Som, T.

    2015-10-28

    Sputter deposited Al doped ZnO (AZO) thin films exhibit a dual hydrogen sensing response in the temperature range 40 °C–150 °C after surface modifications with palladium nanoparticles. The unmodified AZO films showed no response in hydrogen in the temperature range 40 °C–150 °C. The operational temperature windows on the low and high temperature sides have been estimated by isolating the semiconductor-to-metal transition temperature zone of the sensor device. The gas response pattern was modeled by considering various adsorption isotherms, which revealed the dominance of heterogeneous adsorption characteristics. The Arrhenius adsorption barrier showed dual variation with change in hydrogen gas concentration on either side of the semiconductor-to-metal transition. A detailed analysis of the hydrogen gas response pattern by considering the changes in nano palladium due to hydrogen adsorption, and semiconductor-to-metal transition of nanocrystalline Al doped ZnO layer due to temperature, along with material characterization studies by glancing incidence X-ray diffraction, atomic force microscopy, and transmission electron microscopy, are presented.

  19. Structure and Properties of Al and Ga- Doped ZnO

    NASA Astrophysics Data System (ADS)

    Temizer, Namik Kemal

    Recently there is tremendous interest in Transparent conducting oxide (TCO) research due to the unlimited and exciting application areas. Current research is mostly focused on finding alternative low cost and sustainable materials in order to replace indium tin oxide (ITO), which caused serious concern due to the increasing cost of indium and chemical stability issues of ITO. The primary aim of this research is to develop alternative TCO materials with superior properties in order to increase the efficiency in optoelectronic applications, as well as to study the properties of these materials to fully characterize them. We have grown Al and Ga-doped ZnO films with an optimized composition under different deposition conditions in order to understand the effect of processing parameters on the film properties. We report a detailed investigation on the structure-property correlations in Ga and Al codoped ZnO films on c-sapphire substrates where the thin film microstructure varies from nanocrystalline to single crystal. We have achieved highly epitaxial films with very high optical transmittance (close to 90%) and low resistivity (˜110muO-cm) values. The films grown in an ambient oxygen partial pressure (PO2 ) of 50 mTorr and at growth temperatures from room temperature to 600°C showed semiconducting behavior, whereas samples grown at a Po2 of 1 mTorr showed metallic nature. The most striking feature is the occurrence of resistivity minima at relatively high temperatures around 110 K in films deposited at high temperatures. The structure-property correlations reveal that point defects play an important role in modifying the structural, optical, electrical and magnetic properties and such changes in physical properties are controlled predominantly by the defect content. To gain a better understanding of the conduction processes in doped ZnO thin films, we have studied the temperature variation of resistivity of some selected samples that showed some interesting behavior

  20. Origin of carrier scattering in polycrystalline Al-doped ZnO films

    NASA Astrophysics Data System (ADS)

    Jia, Junjun; Oka, Nobuto; Kusayanagi, Minehide; Nakatomi, Satoshi; Shigesato, Yuzo

    2014-10-01

    We observed the carrier transport phenomena in polycrystalline Al-doped ZnO (AZO) films with carrier densities ranging from 2.0 × 1019 to 1.1 × 1021 cm-3. A comparison of the optical carrier density and Hall carrier density indicates that the conduction band in AZO films is nonparabolic above 2.0 × 1020 cm-3. A transition from grain boundary scattering to ionized impurity scattering is observed at a doping level of ˜4.0 × 1020 cm-3. The trap density at the grain boundary increases with increasing Al concentration in the films, implying that the doping level plays a decisive role in the trap density. The excellent fitting of the optical mobility and carrier density using the Brooks-Herring model shows that the acceptor concentration increases with increasing doping level.

  1. Ceria co-doping: synergistic or average effect?

    PubMed

    Burbano, Mario; Nadin, Sian; Marrocchelli, Dario; Salanne, Mathieu; Watson, Graeme W

    2014-05-14

    Ceria (CeO2) co-doping has been suggested as a means to achieve ionic conductivities that are significantly higher than those in singly doped systems. Rekindled interest in this topic over the last decade has given rise to claims of much improved performance. The present study makes use of computer simulations to investigate the bulk ionic conductivity of rare earth (RE) doped ceria, where RE = Sc, Gd, Sm, Nd and La. The results from the singly doped systems are compared to those from ceria co-doped with Nd/Sm and Sc/La. The pattern that emerges from the conductivity data is consistent with the dominance of local lattice strains from individual defects, rather than the synergistic co-doping effect reported recently, and as a result, no enhancement in the conductivity of co-doped samples is observed. PMID:24658460

  2. Structural, electrical, and optical properties of atomic layer deposition Al-doped ZnO films

    SciTech Connect

    Banerjee, P; Lee, W. J.; Bae, K. R.; Lee, Sang Bok; Rubloff, Gary W

    2010-01-01

    Al-doped ZnO (AZO) films of ∼100 nm thickness with various Aldoping were prepared at 150 °C by atomic layer deposition on quartz substrates. At low Aldoping, the films were strongly textured along the [100] direction, while at higher Aldoping the films remained amorphous. Atomic force microscopy results showed that Al–O cycles when inserted in a ZnOfilm, corresponding to a few atomic percent Al, could remarkably reduce the surface roughness of the films. Hall measurements revealed a maximum mobility of 17.7 cm{sup 2} /V s . Film resistivity reached a minima of 4.4×10{sup −3}  Ω cm whereas the carrier concentration reached a maxima of 1.7×10{sup 20}  cm{sup −3} , at 3 at. % Al. The band gap of AZO films varied from 3.23 eV for undoped ZnOfilms to 3.73 eV for AZO films with 24.6 at. % Al. Optical transmittance over 80% was obtained in the visible region. The detrimental impact of increased Al resulting in decreased conductivity due to doping past 3.0 at. % is evident in the x-ray diffraction data, as an abrupt increase in the optical band gap and as a deviation from the Burstein–Moss effect.

  3. Surface-plasmon mediated photoluminescence enhancement of Pt-coated ZnO nanowires by inserting an atomic-layer-deposited Al2O3 spacer layer

    NASA Astrophysics Data System (ADS)

    Ren, Qing-Hua; Zhang, Yan; Lu, Hong-Liang; Chen, Hong-Yan; Zhang, Yuan; Li, De-Hui; Liu, Wen-Jun; Ding, Shi-Jin; Jiang, An-Quan; Zhang, David Wei

    2016-04-01

    Surface-plasmon mediated photoluminescence emission enhancement has been investigated for ZnO nanowire (NW)/Pt nanoparticle (NP) nanostructures by inserting an Al2O3 spacer layer. The thickness of the Al2O3 spacer layer and of the Pt NPs capped on the ZnO NWs are well controlled by atomic layer deposition. It is found that the photoluminescence property of the ZnO NW/Al2O3/Pt hybrid structure is highly tunable with respect to the thickness of the inserted Al2O3 spacer layer. The highest enhancement (˜14 times) of the near band emission of ZnO NWs is obtained with an optimized Al2O3 spacer layer thickness of 10 nm leading to a ultraviolet-visible emission ratio of 271.2 compared to 18.8 for bare ZnO NWs. The enhancement of emission is influenced by a Förster-type non-radiative energy transfer process of the exciton energy from ZnO NWs to Pt NPs as well as the coupling effect between excitons of ZnO NWs and surface plasmons of Pt NPs. The highly versatile and tunable photoluminescence properties of Pt-coated ZnO NWs achieved by introducing an Al2O3 spacer layer demonstrate their potential application in highly efficient optoelectronic devices.

  4. Enhanced photoluminescence and Raman properties of Al-Doped ZnO nanostructures prepared using thermal chemical vapor deposition of methanol assisted with heated brass.

    PubMed

    Thandavan, Tamil Many K; Gani, Siti Meriam Abdul; San Wong, Chiow; Md Nor, Roslan

    2015-01-01

    Vapor phase transport (VPT) assisted by mixture of methanol and acetone via thermal evaporation of brass (CuZn) was used to prepare un-doped and Al-doped zinc oxide (ZnO) nanostructures (NSs). The structure and morphology were characterized by field emission scanning electron microscopy (FESEM) and x-ray diffraction (XRD). Photoluminescence (PL) properties of un-doped and Al-doped ZnO showed significant changes in the optical properties providing evidence for several types of defects such as zinc interstitials (Zni), oxygen interstitials (Oi), zinc vacancy (Vzn), singly charged zinc vacancy (VZn-), oxygen vacancy (Vo), singly charged oxygen vacancy (Vo+) and oxygen anti-site defects (OZn) in the grown NSs. The Al-doped ZnO NSs have exhibited shifted PL peaks at near band edge (NBE) and red luminescence compared to the un-doped ZnO. The Raman scattering results provided evidence of Al doping into the ZnO NSs due to peak shift from 145 cm-1 to an anomalous peak at 138 cm-1. Presence of enhanced Raman signal at around 274 and 743 cm-1 further confirmed Al in ZnO NSs. The enhanced D and G band in all Al-doped ZnO NSs shows possible functionalization and doping process in ZnO NSs. PMID:25756598

  5. Enhanced Photoluminescence and Raman Properties of Al-Doped ZnO Nanostructures Prepared Using Thermal Chemical Vapor Deposition of Methanol Assisted with Heated Brass

    PubMed Central

    Thandavan, Tamil Many K.; Gani, Siti Meriam Abdul; San Wong, Chiow; Md. Nor, Roslan

    2015-01-01

    Vapor phase transport (VPT) assisted by mixture of methanol and acetone via thermal evaporation of brass (CuZn) was used to prepare un-doped and Al-doped zinc oxide (ZnO) nanostructures (NSs). The structure and morphology were characterized by field emission scanning electron microscopy (FESEM) and x-ray diffraction (XRD). Photoluminescence (PL) properties of un-doped and Al-doped ZnO showed significant changes in the optical properties providing evidence for several types of defects such as zinc interstitials (Zni), oxygen interstitials (Oi), zinc vacancy (Vzn), singly charged zinc vacancy (VZn-), oxygen vacancy (Vo), singly charged oxygen vacancy (Vo+) and oxygen anti-site defects (OZn) in the grown NSs. The Al-doped ZnO NSs have exhibited shifted PL peaks at near band edge (NBE) and red luminescence compared to the un-doped ZnO. The Raman scattering results provided evidence of Al doping into the ZnO NSs due to peak shift from 145 cm-1 to an anomalous peak at 138 cm-1. Presence of enhanced Raman signal at around 274 and 743 cm-1 further confirmed Al in ZnO NSs. The enhanced D and G band in all Al-doped ZnO NSs shows possible functionalization and doping process in ZnO NSs. PMID:25756598

  6. Tunable antireflection from conformal Al-doped ZnO films on nanofaceted Si templates

    PubMed Central

    2014-01-01

    Photon harvesting by reducing reflection loss is the basis of photovoltaic devices. Here, we show the efficacy of Al-doped ZnO (AZO) overlayer on ion beam-synthesized nanofaceted silicon for suppressing reflection loss. In particular, we demonstrate thickness-dependent tunable antireflection (AR) from conformally grown AZO layer, showing a systematic shift in the reflection minima from ultraviolet to visible to near-infrared ranges with increasing thickness. Tunable AR property is understood in light of depth-dependent refractive index of nanofaceted silicon and AZO overlayer. This improved AR property significantly increases the fill factor of such textured heterostructures, which reaches its maximum for 60-nm AZO compared to the ones based on planar silicon. This thickness matches with the one that shows the maximum reduction in surface reflectance. PACS 81.07.-b; 42.79.Wc; 81.16.Rf; 81.15.Cd PMID:24808799

  7. Sputter deposition of Al-doped ZnO films with various incident angles

    SciTech Connect

    Sato, Yasushi; Yanagisawa, Kei; Oka, Nobuto; Nakamura, Shin-ichi; Shigesato, Yuzo

    2009-09-15

    Al-doped ZnO (AZO) films were sputter deposited on glass substrates heated at 200 degree sign C under incident angles of sputtered particles at 0 degree sign (incidence normal to substrate), 20 deg., 40 deg., 60 deg., and 80 deg. In the case of normal incidence, x-ray diffraction pole figures show a strong [001] preferred orientation normal to the film surface. In contrast, in the case wherein the incident angles were higher than 60 degree sign , the [001] orientation inclined by 25 deg. - 35 deg. toward the direction of sputtered particles. Transmission electron microscopy revealed that the tilt angle of the [001] orientation increased with increasing angle of the incident sputtered particles, whereas the columnar structure did not show any sign of inclination with respect to the substrate plane.

  8. Tunable antireflection from conformal Al-doped ZnO films on nanofaceted Si templates

    NASA Astrophysics Data System (ADS)

    Basu, Tanmoy; Kumar, Mohit; Sahoo, Pratap Kumar; Kanjilal, Aloke; Som, Tapobrata

    2014-04-01

    Photon harvesting by reducing reflection loss is the basis of photovoltaic devices. Here, we show the efficacy of Al-doped ZnO (AZO) overlayer on ion beam-synthesized nanofaceted silicon for suppressing reflection loss. In particular, we demonstrate thickness-dependent tunable antireflection (AR) from conformally grown AZO layer, showing a systematic shift in the reflection minima from ultraviolet to visible to near-infrared ranges with increasing thickness. Tunable AR property is understood in light of depth-dependent refractive index of nanofaceted silicon and AZO overlayer. This improved AR property significantly increases the fill factor of such textured heterostructures, which reaches its maximum for 60-nm AZO compared to the ones based on planar silicon. This thickness matches with the one that shows the maximum reduction in surface reflectance.

  9. Transparent conducting Si-codoped Al-doped ZnO thin films prepared by magnetron sputtering using Al-doped ZnO powder targets containing SiC

    SciTech Connect

    Nomoto, Jun-ichi; Miyata, Toshihiro; Minami, Tadatsugu

    2009-07-15

    Transparent conducting Al-doped ZnO (AZO) thin films codoped with Si, or Si-codoped AZO (AZO:Si), were prepared by radio-frequency magnetron sputtering using a powder mixture of ZnO, Al{sub 2}O{sub 3}, and SiC as the target; the Si content (Si/[Si+Zn] atomic ratio) was varied from 0 to 1 at. %, but the Al content (Al/[Al+Zn] atomic ratio) was held constant. To investigate the effect of carbon on the electrical properties of AZO:Si thin films prepared using the powder targets containing SiC, the authors also prepared thin films using a mixture of ZnO, Al{sub 2}O{sub 3}, and SiO{sub 2} or SiO powders as the target. They found that when AZO:Si thin films were deposited on glass substrates at about 200 degree sign C, both Al and Si doped into ZnO acted as effective donors and the atomic carbon originating from the sputtered target acted as a reducing agent. As a result, sufficient improvement was obtained in the spatial distribution of resistivity on the substrate surface in AZO:Si thin films prepared with a Si content (Si/[Si+Zn] atomic ratio) of 0.75 at. % using powder targets containing SiC. The improvement in resistivity distribution was mainly attributed to increases in both carrier concentration and Hall mobility at locations on the substrate corresponding to the target erosion region. In addition, the resistivity stability of AZO: Si thin films exposed to air for 30 min at a high temperature was found to improve with increasing Si content.

  10. Effect of anion-to-cation supplying ratio on the surface morphology of AlN films grown on ZnO substrates at low temperature

    SciTech Connect

    Im, Inho; Jung, Mina; Koo, Jieun; Lee, Hyunjae; Park, Jinsub; Minegishi, Tsutomu; Park, Seunghwan; Fujii, Katsushi; Yao, Takafumi; Kil, Gyungsuk; Hanada, Takashi; Chang, Jiho

    2010-01-15

    The authors investigated the evolution of surface morphology of AlN films grown on ZnO substrates at low temperature (LT) (400 deg. C) as a function of anion/cation supplying ratio (V/III ratio). Unlike the well-known favorable growth conditions for high-temperature growth, smooth-surface LT-AlN layers were obtained under the O-polar surface, stoichiometric, and N-rich conditions. LT-AlN layers revealed smooth surface (roughness in root mean square=0.20 nm for AlN on O-polar ZnO and 0.44 nm for AlN on Zn-polar ZnO) and quite low etch-pit density ({approx}2x10{sup 6} cm{sup -2} for AlN/Zn-polar ZnO).

  11. Mechanisms of lighting enhancement of Al nanoclusters-embedded Al-doped ZnO film in GaN-based light-emitting diodes

    SciTech Connect

    Lee, Hsin-Ying; Chou, Ying-Hung; Lee, Ching-Ting

    2010-01-15

    Aluminum (Al)-doped ZnO (AZO) films with embedded Al nanoclusters were proposed and utilized to enhance the light output power and maximum operation current of GaN-based light-emitting diodes (LEDs). The AZO films were sputtered using ZnO and Al targets in a magnetron cosputtering system. With Al dc power of 7 W and ZnO 100 W ac power, the electron concentration of 4.1x10{sup 20} cm{sup -3}, electron mobility of 16.2 cm{sup 2}/V s, and resistivity of 7.2x10{sup -4} {Omega} cm were obtained for the deposited AZO film annealed at 600 deg. C for 1 min in a N{sub 2} ambient. As verified by a high resolution transmission electron microscopy, the deposited AZO films with embedded Al nanoclusters were clearly observed. A 35% increase in light output power of the GaN-based LEDs with Al nanoclusters-embedded AZO films was realized compared with the conventional LEDs operated at 500 mA. It was verified experimentally that the various characteristics of GaN-based LEDs including the antireflection, light scattering, current spreading, and the light extraction efficiency in light emission could be significantly enhanced with the use of Al nanoclusters-embedded AZO films.

  12. Synthesis of high-quality Al-doped ZnO nanoink

    NASA Astrophysics Data System (ADS)

    Thu, Tran V.; Maenosono, Shinya

    2010-01-01

    Al-doped ZnO (AZO) nanoparticles (NPs) have been synthesized via the thermal decomposition of metal acetylacetonate precursors in a nonoxygen and nonpolar solvent. Long-chain alkyl amines have been utilized to terminate the growth of AZO NPs and to stabilize them. The NPs have been characterized by a number of techniques as monocrystalline, exhibiting a hexagonal (wurtzite) structure with sizes from 8 to 13 nm. The composition of Al in the resulting NP is related solely to the composition of the reaction mixture and the size is controllable with the temperature of the reaction. The AZO NP dispersion has been proven to be stable over a 24 h period by dynamic light scattering measurements. The influence of the synthetic conditions, such as temperature, reaction time and the Al doping content, on the properties of NPs have also been investigated. An optically transparent AZO thin film was fabricated using the AZO nanoink by spin casting followed by annealing. The resulting film resistivity was measured to be 5.0×10-3 Ω cm.

  13. Comparative studies of Al-doped ZnO and Ga-doped ZnO transparent conducting oxide thin films

    PubMed Central

    2012-01-01

    We have investigated the influences of aluminum and gallium dopants (0 to 2.0 mol%) on zinc oxide (ZnO) thin films regarding crystallization and electrical and optical properties for application in transparent conducting oxide devices. Al- and Ga-doped ZnO thin films were deposited on glass substrates (corning 1737) by sol–gel spin-coating process. As a starting material, AlCl3⋅6H2O, Ga(NO3)2, and Zn(CH3COO)2⋅2H2O were used. A lowest sheet resistance of 3.3 × 103 Ω/□ was obtained for the GZO thin film doped with 1.5 mol% of Ga after post-annealing at 650°C for 60 min in air. All the films showed more than 85% transparency in the visible region. We have studied the structural and microstructural properties as a function of Al and Ga concentrations through X-ray diffraction and scanning electron microscopy analysis. In addition, the optical bandgap and photoluminescence were estimated. PMID:23173885

  14. Effects of annealing pressure and Ar+ sputtering cleaning on Al-doped ZnO films

    NASA Astrophysics Data System (ADS)

    Wang, Jiwei; Mei, Yong; Lu, Xuemei; Fan, Xiaoxing; Kang, Dawei; Xu, Panfeng; Tan, Tianya

    2016-11-01

    Post-treatments of Al-doped ZnO films fabricated by sol-gel method were studied in condition of annealing in air, vacuum and protective ambient, as well as the follow-up Ar+ sputtering cleaning. The effect of annealing pressure on resistivity of AZO films was investigated from 105 to 10-4 Pa, where the resistivity decreased four orders of magnitude as the pressure decreased and approached to its minimum at 10 Pa. It was observed that the main decreasing of resistivity occurred in a very narrow range of middle vacuum (between 100 and 10 Pa) and high vacuum was dispensable. The XRD and XPS characterizations demonstrated that the radical increasing of oxygen vacancy, Zn interstitial and substitution of Al3+ for Zn2+ under middle vacuum were responsible for the significant enhancement of conductivity. The follow-up Ar+ sputtering cleaning can further decrease the resistivity through removing the chemisorbed oxygen on film surface and grain boundaries, meanwhile fulfil the surface texture process, and thus improve both electrical and optical performances for applications.

  15. The improvement of solar photocatalytic activity of ZnO by doping with Er3+:Y3Al5O12 during dye degradation

    NASA Astrophysics Data System (ADS)

    Yin, L. N.; Li, Y.; Wang, J.; Kong, Y. M.; Zhai, Y.; Wang, B. X.; Li, K.; Zhang, X. D.

    2012-12-01

    The Er3+:Y3Al5O12, an upconversion luminescence agent, which is able to transform the visible light to ultraviolet light, was synthesized by nitrate-citric acid method. And then, a novel photocatalyst, Er3+:Y3Al5O12/ZnO composites, was prepared by ultrasonic dispersing and liquid boil method. X-ray diffraction (XRD) and scanning electron microscopy (SEM) were used to characterize the structural morphology and surface properties of the Er3+:Y3Al5O12/ZnO. Azo Fuchsine dye was selected as target organic pollutant to inspect the photocatalytic activity of Er3+:Y3Al5O12/ZnO. The key parameters affecting the photocatalytic activity of Er3+:Y3Al5O12/ZnO, such as Er3+:Y3Al5O12 content, heat-treatment temperature and heat-treatment time, were studied. In addition, the effects of dye initial concentration, Er3+:Y3Al5O12/ZnO amount and solar light irradiation time were also reviewed, as well as the photocatalytic activity in degradation of other organic dyes were compared. It was found that the photocatalytic activity of Er3+:Y3Al5O12/ZnO was much superior to pure ZnO under the same conditions. Thus, the Er3+:Y3Al5O12/ZnO is a useful photocatalyst for the wastewater treatment because it can efficiently utilize solar light by converting visible light into ultraviolet light.

  16. A facile cost-effective method for preparing poinsettia-inspired superhydrophobic ZnO nanoplate surface on Al substrate with corrosion resistance

    NASA Astrophysics Data System (ADS)

    Wang, Peng; Han, Huilong; Li, Junfeng; Fan, Xiaoliang; Ding, Haimin; Wang, Jinfeng

    2016-02-01

    This paper reports an easy method to imitate the "poinsettia leaves" by constructing ZnO nanoplates on Al substrate. Using ammonium hydroxide as the reactant, together with zinc nitrate hexahydrate, randomly distributed ZnO nanoplates can be fabricated on the Al substrate directly. The morphology of the ZnO nanoplates can be controlled by the growth time, and the nanoplate growth mechanism is discussed in detail. After modification with stearic acid, the nanoplate surface shows a stable superhydrophobicity. Moreover, the superhydrophobic ZnO nanoplate surface showed much smaller corrosion current density, reduced 23,088-fold from the bare Al 6061 substrate. This facile and low-cost method may open a new avenue in the design and fabrication of superhydrophobic surfaces on Al materials with anticorrosive property.

  17. Photovoltaic Conversion Enhancement of a Carbon Quantum Dots/p-Type CuAlO2/n-Type ZnO Photoelectric Device.

    PubMed

    Pan, Jiaqi; Sheng, Yingzhuo; Zhang, Jingxiang; Huang, Peng; Zhang, Xin; Feng, Boxue

    2015-04-22

    Carbon quantum dots (C QDs)/p-type CuAlO2/n-type ZnO photoelectric bilayer film composites were prepared by a simple route, through which ZnO films were sputtered on crystal quartz substrates and CuAlO2 films were prepared by sol-gel on ZnO films and then these bilayer films were composited with C QDs on their surface. The characterization results indicated that C QDs were well combined with the surface of the CuAlO2 films. The photovoltage and photocurrent of these bilayer film composites were investigated under illumination and darkness switching, which demonstrated to be significantly enhanced compared with those of the CuAlO2/ZnO bilayer films. Through analysis, this enhancement of the photoconductivity was mainly attributed to C QDs with unique up-converted photoluminescence behavior. PMID:25822085

  18. Effect of Er3+ and Yb3+ co-doping on the performance of a ZnO-based DSSC

    NASA Astrophysics Data System (ADS)

    Tsege, Ermias Libnedengel; Vu, Hong Ha Thi; Atabaev, Timur Sh.; Kim, Hyung-Kook; Hwang, Yoon-Hwae

    2016-06-01

    Zinc-oxide (ZnO) nanoparticles (NPs) co-doped with different concentrations of rare-earth ions of erbium and ytterbium, (ZnO: Er3+, Yb3+) were synthesized for applications to ZnO-based dye sensitized solar cells (DSSC). The composite NPs used for the photoelectrode (PE) were synthesized using a simple co-precipitation technique. X-ray diffraction and scanning electron microscopy measurements on the prepared samples revealed a single phase wurzite ZnO powder with approximate sizes in the range from 15 to 20 nm. Photoluminescence (PL) measurements confirmed that the synthesized composite NPs had a good up-conversion (UPC) property. The prepared powders were directly used to make PEs for DSSCs. The photovoltaic efficiency of the DSSCs was enhanced compared to that of pure ZnO-based DSSCs. Particularly, the PE made up of ZnO: Er3+, Yb3+ NPs with 4 wt% of Er3+ and Yb3+ generates a short-circuit current density ( J sc ) of 4.794 mA·cm -2 and an open circuit voltage ( V oc ) of 0.602 V with an efficiency ( η) of 1.58%. The result indicates a 48.4% J sc improvement compared to a pure ZnO PE-based DSSC. The photocurrent improvement is due to an increase in the light-harvesting capacity of the PEs attained through the UPC property of ZnO: Er3+, Yb3+ NPs. As confirmed by PL and electrochemical impedance spectra (EIS), the use of ZnO: Er3+,Yb3+ NPs as PEs for DSSCs enhances charge concentration and transport as a result of n-type doping. However, all ZnO: Er3+, Yb3+ NP based PEs exhibited a lower V oc as a result of a down shift in the Fermi energy, which affects the overall efficiency of the cell.

  19. Competition between (001) and (111) MgO thin film growth on Al-doped ZnO by oxygen plasma assisted pulsed laser deposition

    SciTech Connect

    Xiao, Bo; Yang, Qiguang; Walker, Brandon; Gonder, Casey A.; Romain, Gari C.; Mundle, Rajeh; Bahoura, Messaoud; Pradhan, A. K.

    2013-06-07

    We report on the study of epitaxial MgO thin films on (0001) Al-doped ZnO (Al: ZnO) underlayers, grown by oxygen plasma assisted pulsed laser deposition technique. A systematic investigation of the MgO thin films was performed by X-ray diffraction and atomic force microscopy, along with the current-voltage characteristics. A distinguished behavior was observed that the preferred MgO orientation changes from (111) to (001) in the films as the growth temperature increases. Two completely different in-plane epitaxial relationships were also determined from X-ray diffraction as: [110]MgO//[1120]Al: ZnO and [110]MgO//[1100]Al: ZnO for (001) MgO with 60 Degree-Sign rotated triplet domains, and [110]MgO//[1120]Al: ZnO for (111) MgO with 180 Degree-Sign rotated twin. The pronounced temperature dependence indicates a reconciliation of the nucleation driving forces among surface, interfacial, and strain energy for heteroepitaxy of cubic MgO on hexagonal Al: ZnO. The related interfacial atomic registry is considered to be important to the formation of unusual (001) MgO on hexagonal crystals. In addition, the electrical characterization revealed a dramatic reduction of the leakage current in (001) MgO thin films, whereas the small grain size of (111) MgO is identified by atomic force microscopy as a main cause of large leakage current.

  20. Enhanced Ultraviolet Stability of Air-Processed Polymer Solar Cells by Al Doping of the ZnO Interlayer.

    PubMed

    Prosa, Mario; Tessarolo, Marta; Bolognesi, Margherita; Margeat, Olivier; Gedefaw, Desta; Gaceur, Meriem; Videlot-Ackermann, Christine; Andersson, Mats R; Muccini, Michele; Seri, Mirko; Ackermann, Jörg

    2016-01-27

    Photostability of organic photovoltaic devices represents a key requirement for the commercialization of this technology. In this field, ZnO is one of the most attractive materials employed as an electron transport layer, and the investigation of its photostability is of particular interest. Indeed, oxygen is known to chemisorb on ZnO and can be released upon UV illumination. Therefore, a deep analysis of the UV/oxygen effects on working devices is relevant for the industrial production where the coating processes take place in air and oxygen/ZnO contact cannot be avoided. Here we investigate the light-soaking stability of inverted organic solar cells in which four different solution-processed ZnO-based nanoparticles were used as electron transport layers: (i) pristine ZnO, (ii) 0.03 at %, (iii) 0.37 at %, and (iv) 0.8 at % aluminum-doped AZO nanoparticles. The degradation of solar cells under prolonged illumination (40 h under 1 sun), in which the ZnO/AZO layers were processed in air or inert atmosphere, is studied. We demonstrate that the presence of oxygen during the ZnO/AZO processing is crucial for the photostability of the resulting solar cell. While devices based on undoped ZnO were particularly affected by degradation, we found that using AZO nanoparticles the losses in performance, due to the presence of oxygen, were partially or totally prevented depending on the Al doping level. PMID:26751271

  1. Ultrasonic spray pyrolysis growth of ZnO and ZnO:Al nanostructured films: Application to photocatalysis

    SciTech Connect

    Kenanakis, G.; Katsarakis, N.

    2014-12-15

    Highlights: • Al–ZnO thin films and nanostructures were obtained by ultrasonic spray pyrolysis. • The texture and morphology of the samples depend on the deposition parameters. • The photocatalytic degradation of stearic acid was studied upon UV-A irradiation. - Abstract: Pure and Al-doped ZnO (Al = 1, 3, 5%) nanostructured thin films were grown at 400 °C on glass substrates by ultrasonic spray pyrolysis, a simple, environmental-friendly and inexpensive method, using aqueous solutions as precursors. The structural and morphological characteristics of the samples depend drastically on deposition parameters; ZnO nanostructured films, nanopetals and nanorods were systematically obtained by simply varying the precursor solution and/or the spraying time. Transmittance measurements have shown that all samples are transparent in the visible wavelength region. Finally, the photocatalytic properties of the samples were investigated against the degradation of stearic acid under UV-A light illumination (365 nm); both pure and Al-doped ZnO nanostructured thin films show good photocatalytic activity regarding the degradation of stearic acid, due to their good crystallinity and large surface area.

  2. The formation of tungsten doped Al2O3/ZnO coatings on aluminum by plasma electrolytic oxidation and their application in photocatalysis

    NASA Astrophysics Data System (ADS)

    Stojadinović, Stevan; Vasilić, Rastko; Radić, Nenad; Tadić, Nenad; Stefanov, Plamen; Grbić, Boško

    2016-07-01

    Tungsten doped Al2O3/ZnO coatings are formed by plasma electrolytic oxidation of aluminum substrate in supporting electrolyte (0.1 M boric acid + 0.05 M borax + 2 g/L ZnO) with addition of different concentrations of Na2WO4·2H2O. The morphology, crystal structure, chemical composition, and light absorption characteristics of formed surface coatings are investigated. The X-ray diffraction and X-ray photoelectron spectroscopy results indicate that formed surface coatings consist of alpha and gamma phase of Al2O3, ZnO, metallic tungsten and WO3. Obtained results showed that incorporated tungsten does not have any influence on the absorption spectra of Al2O3/ZnO coatings, which showed invariable band edge at about 385 nm. The photocatalytic activity of undoped and tungsten doped Al2O3/ZnO coatings is estimated by the photodegradation of methyl orange. The photocatalytic activity of tungsten doped Al2O3/ZnO coatings is higher thanof undoped Al2O3/ZnO coatings; the best photocatalytic activity is ascribed to coatings formed in supporting electrolyte with addition of 0.3 g/L Na2WO4·2H2O. Tungsten in Al2O3/ZnO coatings acts as a charge trap, thus reducing the recombination rate of photogenerated electron-hole pairs. The results of PL measurements are in agreement with photocatalytic activity. Declining PL intensity corresponds to increasing photocatalytic activity of the coatings, indicating slower recombination of electron-hole pairs.

  3. Epitaxial growth of ZnO thin films on ScAlMgO 4 (0 0 0 1) by chemical solution deposition

    NASA Astrophysics Data System (ADS)

    Wessler, B.; Steinecker, A.; Mader, W.

    2002-07-01

    Epitaxial zinc oxide films were produced on the low misfit (0.3%) substrate ScAlMgO 4 (0 0 0 1) by chemical solution deposition (CSD). Epitaxial growth of ZnO films was achieved by spin coating a precursor solution of zinc acetate dihydrate and ethanolamine in 2-methoxyethanol, heating at 300°C, then at 500°C, and finally at 850°C. X-ray diffraction ( θ/2 θ-scans/off-axis ϕ-scans) as well as electron diffraction show that the axes a and c of ZnO and ScAlMgO 4 are parallel. The absolute orientation of the ZnO film was determined by electron microdiffraction patterns to be [0 0 0 1¯] . Electron microscopy did not reveal any reaction between film and substrate. The structure of the interface between ZnO and ScAlMgO 4 was characterized in detail by high-resolution TEM methods. Exit wave reconstruction from focus series was carried out to localize the positions of atoms at the interface. It was found that the ZnO film coherently continues the terminating tetrahedral (Mg,Al)O 4 layer of the ScAlMgO 4 substrate to result in an ABAB stacking of the oxygen layers across the interface as in the wurtzite structure. The structural model is in agreement with the absolute orientation of the ZnO film.

  4. Synthesis and Photoluminescence Characteristics of CaIn2O4:Dy3+ Phosphors Co-Doped with Gd3+, Zn2+ or AI3+ Ions.

    PubMed

    Gou, Jing; Wang, Jing; Yu, Binxun; Zhang, Dongyang

    2016-04-01

    Novel warm-white emitting phosphors CaIn2O4:Dy3+ co-doped with Gd3+, Zn2+, or Al3+ ions were prepared by solid state reaction. In this paper, a strategy of co-doping with different ions was used with the aim of affecting the luminescence properties of CaIn204:0.6%Dy3+ under NUV excitation. The luminescence intensities of CaIn2O4:0.6%Dy3+ were enhanced by 0.2% Gd3+ or 0.2% Zn2+ ions co-doping under 367 nm excitation, but lowered by co-doping with 0.2% Al3+ ions. Furthermore, the chromaticity coordinates of CaIn2O4:0.6%Dy3+ can be tuned from the cold-white region to warm-white region with Gd3+ or Zn2+ ions co-doping. These findings show that CaIn2O4:0.6%Dy3+,0.2% Gd3+, and CaIn2O4:0.6%Dy3+,0.2% Zn2+ have potential application value as new warm-white LED phosphors. PMID:27451749

  5. The Preparation and Properties of Al-Doped ZnO Thin Films as Transparent Electrodes for Solar Cell

    NASA Astrophysics Data System (ADS)

    Ding, J. N.; Tan, C. B.; Yuan, N. Y.; Feng, X. W.; Chang, X. Y.; Ye, F.

    Transparent conductive oxides based on ZnO are promising materials for application in thin-film solar photovoltaic cells. Al-doped ZnO thin films with a large area of 1 m × 1.5 m were prepared by magnetic sputtering on glass substrate using a ceramic target (98 wt. % ZnO, 2 wt. % Al2O3) in different Ar+H2 ambient at different substrate temperature. SiO2 layer with a thickness of 20 nm was deposited as a resistant layer. To investigate the influence of H2-flow on the properties of AZO films, H2-flow rate was changed during the growth process with a fixed Ar-flow rate. The effect of the substrate temperature and the H2-flow rate on the structure, electrical and optical properties was studied. In order to enhance light scattering and absorption inside the cell, suitable surface texture is needed. The influence of wet chemical etching on surface roughness and haze of AZO were also investigated.

  6. Comparison of Magnetic Property of Cu-, Al-, and Li-DOPED ZnO Dilute Magnetic Semiconductor Thin Films

    NASA Astrophysics Data System (ADS)

    van, L. H.; Ding, J.; Hong, M. H.; Fan, Z. C.; Wang, L.

    The properties of Cu-, Al-, and Li-doped ZnO dilute magnetic semiconductor (DMS) have been analyzed and compared. Zincite with wurtzite structures have been synthesized successfully on SiO2 (101) and SiO2 (110) substrates in both the Cu-ZnO and Li-ZnO DMS. The highly textured ZnO (002) peaks were able to form in the Cu-ZnO system at 400°C. However, it formed at even much lower temperature in the Li-ZnO system, that is only 25°C. ZnO (002) peaks in both systems were formed without any impurity phases. However, no crystalline structure is synthesized in the Al-ZnO system. The thin films formed are amorphous. The structural and related magnetic properties of the films were analyzed by XRD, AFM, and VSM. The films were found to be at their highest magnetism at the value of 3.1 emu/cm3 for Co-ZnO and 2.5 emu/cm3 for Li-ZnO, synthesized at 400°C, and under 1 × 10-4 Torr oxygen partial pressure.

  7. Structural Properties and Electrochemical Performance of ZnO Nanosheets Grown Directly on Al substrate by Chemical Bath Deposition Techniques

    NASA Astrophysics Data System (ADS)

    Al-Asadi, Ahmed; Ferrera, Roberto; Henley, Luke; Lopez, Nestor; Carozo, Victor; Lin, Zhong; Terrones, Mauricio; Talapatra, Saikat

    We will report on the synthesis & electrochemical characterization of 2-dimentional zinc oxide grown directly on Al substrate by a simple chemical bath deposition method at low temperature (below 1000C). Detail structural characterizations of the synthesized ZnO sheets will be presented and discussed. The electrochemical performances of electrochemical double layer capacitors (EDLC) on electrodes fabricated using these materials were evaluated using cyclic voltammetry, galvanostatic charge-discharge, and electrochemical impedance spectroscopy using various electrolytes. We found that high specific capacitance values (greater than 300 F/g) could be achieved using an aqueous electrolyte. The aforementioned results indicates the possibly for using 2-D ZnO architectures fabricated by this simple and cost efficient technique for future electrochemical energy storage devices.

  8. Enhancement ZnO nanofiber as semiconductor for dye-sensitized solar cells by using Al doped

    NASA Astrophysics Data System (ADS)

    Sutanto, Bayu; Arifin, Zainal; Suyitno, Hadi, Syamsul; Pranoto, Lia Muliani; Agustia, Yuda Virgantara

    2016-03-01

    The purpose of this research is to produce Al-doped ZnO (AZO) nanofibers in order to enhance the performance of Dye-Sensitized Solar Cell (DSSC). AZO nanofiber semiconductor was manufactured by electrospinning process of Zinc Acetate Dehydrate (Zn(CH3COO)2) solution and precursor of Polyvinyl Acetate (PVA). The doping process of Al was built by dissolving 0-4 wt% in concentrations of AlCl3 to Zinc Acetate. AZO green fiber was sintered at temperature 500°C for an hour. The result shows that Al doped ZnO had capability to increase the electrical conductivity of semiconductor for doping 0, 1, 2, 3, and 4 wt% for 2,07×10-3; 3,71×10-3; 3,59 ×10-3; 3,10 ×10-3 and 2,74 ×10-3 S/m. The best performance of DSSC with 3 cm2 active area was obtained at 1 wt% Al-ZnO which the value of VOC, ISC, FF, and efficiency were 508,43 mV, 3,125 mA, 38,76%, and 0,411% respectively. These coincide with the electrical conductivity of semiconductor and the crystal size of XRD result that has the smallest size as compared to other doping variations.

  9. Fabrication of nanostructured Al-doped ZnO thin film for methane sensing applications

    NASA Astrophysics Data System (ADS)

    Shafura, A. K.; Sin, N. D. Md.; Azhar, N. E. I.; Saurdi, I.; Uzer, M.; Mamat, M. H.; Shuhaimi, A.; Alrokayan, Salman A. H.; Khan, Haseeb A.; Rusop, M.

    2016-07-01

    CH4 gas sensor was fabricated using spin-coating method of the nanostructured ZnO thin film. Effect of annealing temperature on the electrical and structural properties of the film was investigated. Dense nanostructured ZnO film are obtained at higher annealing temperature. The optimal condition of annealing temperature is 500°C which has conductivity and sensitivity value of 3.3 × 10-3 S/cm and 11.5%, respectively.

  10. Defect analysis by transmission electron microscopy of epitaxial Al-doped ZnO films grown on (0001) ZnO and a-sapphire by RF magnetron sputtering

    NASA Astrophysics Data System (ADS)

    Rengachari, Mythili; Bikowski, André; Ellmer, Klaus

    2016-07-01

    Microstructural investigations by cross section Transmission Electron Microscopy have been carried out on Al-doped ZnO films epitaxially grown on (0001) ZnO and a-sapphire by RF magnetron sputtering, since it is known that crystallographic defects influence the physical properties of ZnO films. Threading dislocations and basal stacking faults were the predominant defects observed in these films, which were dependent on the type of the substrate and its orientation. The orientational relationship between the ZnO:Al film and the a-sapphire was determined to be ( 11 2 ¯ 0 )sapphire||(0001)ZnO:Al and [0001]sapphire||[ 11 2 ¯ 0 ]ZnO:Al. The density of dislocations in the heteroepitaxial film of ZnO:Al on a-sapphire was higher than that of the homoepitaxial film of ZnO:Al on undoped ZnO, due to the difference in the lattice mismatch, which also affected the crystallinity of the film.

  11. Defects in semipolar (1 1\\bar {2}\\bar {2}) ZnO grown on (112) LaAlO3/(La,Sr)(Al,Ta)O3 substrate by pulsed laser deposition

    NASA Astrophysics Data System (ADS)

    Tian, -Sheng, Jr.; Wu, Yue-Han; Peng, Chun-Yen; Chiu, Kun-An; Shih, Yi-Sen; Do, Hien; Lin, Pei-Yin; Ho, Yen-Teng; Chu, Ying-Hao; Chang, Li

    2013-03-01

    The microstructure of semipolar (1 1\\bar {2}\\bar {2}) ZnO deposited on (112) LaAlO3/(La,Sr)(Al,Ta)O3 was investigated by transmission electron microscopy. The ZnO shows an in-plane epitaxial relationship of [1 1\\bar {2}3]_{{ZnO}}\\parallel [1 1\\bar {1}]_{{LAO/ LSAT}} with oxygen-face sense polarity. The misfit strain along [1 1\\bar {2}3]_{{ZnO}} and [1\\bar {1}0 0]_{{ZnO}} is relieved through the formation of misfit dislocations with the Burgers vectors \\mathbf{b}=1/6[1 1\\bar {2}3]_{{ZnO}} and \\mathbf{b}=1/3\\langle 1\\bar {2}1 0\\rangle _{{ZnO}}, respectively. The line defects in the semipolar ZnO are predominantly perfect dislocations, and the dislocation density decreases with increasing ZnO thickness as a result of dislocation reactions. Planar defects were observed to lie in the M-plane and extend along <0001>, whereas basal stacking faults were rarely found.

  12. Control of selforganized magnetic nanocrystals aggregation in (Ga,Fe)N by co-doping with shallow donors and acceptors

    NASA Astrophysics Data System (ADS)

    Bonanni, A.; Navarro-Quezada, A.; Li, T.; Kiecana, M.; Sawicki, M.; Dietl, T.

    2008-03-01

    A number of possible room temperature functionalities has recently been proposed for magnetically doped semiconductors, in which spinodal decomposition leads to the self-organized formation of coherent ferromagnetic nanodots or nanocolumns [1]. It has also been suggested that the decomposition can be controlled in a wide range by growth conditions and co-doping [2]. We have extended our previous structural and magnetic studies of (Ga,Fe)N [3] by examining the effects of Si and Mg co-doping. As before, we have found the magnetic response to consist of a paramagnetic signal from substitutional Fe and of a ferromagnetic component due to Fe1-xN nanocrystals. Our results demonstrate that the co-doping reduces the fractional concentration of Fe contributing to the nanocrystals. This shows that tuning of the Fermi energy by changing the charge state of the transition metal ions affects their aggregation, as proposed recently [2].1. H.Katayama-Yosida et al., phys.stat. sol. (a) 204, 15 (2007); T.Dietl, arXiv:0711.0343. 2. S.Kuroda et al., Nature Mat. 6, 440 (2007). 3. A.Bonanni et al., Phys. Rev. B 75, 125210 (2007).

  13. Characteristics of Al-doped ZnO films grown by atomic layer deposition for silicon nanowire photovoltaic device.

    PubMed

    Oh, Byeong-Yun; Han, Jin-Woo; Seo, Dae-Shik; Kim, Kwang-Young; Baek, Seong-Ho; Jang, Hwan Soo; Kim, Jae Hyun

    2012-07-01

    We report the structural, electrical, and optical characteristics of Al-doped ZnO (ZnO:Al) films deposited on glass by atomic layer deposition (ALD) with various Al2O3 film contents for use as transparent electrodes. Unlike films fabricated by a sputtering method, the diffraction peak position of the films deposited by ALD progressively moved to a higher angle with increasing Al2O3 film content. This indicates that Zn sites were effectively replaced by Al, due to layer-by-layer growth mechanism of ALD process which is based on alternate self-limiting surface chemical reactions. By adjusting the Al2O3 film content, a ZnO:Al film with low electrical resistivity (9.84 x 10(-4) Omega cm) was obtained at an Al2O3 film content of 3.17%, where the Al concentration, carrier mobility, optical transmittance, and bandgap energy were 2.8 wt%, 11.20 cm2 V(-1) s(-1), 94.23%, and 3.6 eV, respectively. Moreover, the estimated figure of merit value of our best sample was 8.2 m7Omega(-1). These results suggest that ZnO:Al films deposited by ALD could be useful for electronic devices in which especially require 3-dimensional conformal deposition of the transparent electrode and surface passivation. PMID:22966566

  14. Electrical and optical properties of p-type codoped ZnO thin films prepared by spin coating technique

    NASA Astrophysics Data System (ADS)

    Pathak, Trilok Kumar; Kumar, Vinod; Swart, H. C.; Purohit, L. P.

    2016-03-01

    Undoped, doped and codoped ZnO thin films were synthesized on glass substrates using a spin coating technique. Zinc acetate dihydrate, ammonium acetate and aluminum nitrate were used as precursor for zinc, nitrogen and aluminum, respectively. X-ray diffraction shows that the thin films have a hexagonal wurtzite structure for the undoped, doped and co-doped ZnO. The transmittance of the films was above 80% and the band gap of the film varied from 3.20 eV to 3.24 eV for undoped and doped ZnO. An energy band diagram to describe the photoluminescence from the thin films was also constructed. This diagram includes the various defect levels and possible quasi-Fermi levels. A minimum resistivity of 0.0834 Ω-cm was obtained for the N and Al codoped ZnO thin films with p-type carrier conductivity. These ZnO films can be used as a window layer in solar cells and in UV lasers.

  15. Al-doped ZnO contact to CdZnTe for x- and gamma-ray detector applications

    NASA Astrophysics Data System (ADS)

    Roy, U. N.; Camarda, G. S.; Cui, Y.; Gul, R.; Hossain, A.; Yang, G.; Mundle, R. M.; Pradhan, A. K.; James, R. B.

    2016-06-01

    The poor adhesion of common metals to CdZnTe (CZT)/CdTe surfaces has been a long-standing challenge for radiation detector applications. In this present work, we explored the use of an alternative electrode, viz., Al-doped ZnO (AZO) as a replacement to common metallic contacts. ZnO offers several advantages over the latter, such as having a higher hardness, a close match of the coefficients of thermal expansion for CZT and ZnO, and better adhesion to the surface of CZT due to the contact layer being an oxide. The AZO/CZT contact was investigated via high spatial-resolution X-ray response mapping for a planar detector at the micron level. The durability of the device was investigated by acquiring I-V measurements over an 18-month period, and good long-term stability was observed. We have demonstrated that the AZO/CZT/AZO virtual-Frisch-grid device performs fairly well, with comparable or better characteristics than that for the same detector fabricated with gold contacts.

  16. Etching Characteristics of ZnO and Al-Doped ZnO in Inductively Coupled Cl2/CH4/H2/Ar and BCl3/CH4/H2/Ar Plasmas

    NASA Astrophysics Data System (ADS)

    Lee, Hack Joo; Kwon, Bong Soo; Kim, Hyun Woo; Kim, Seon Il; Yoo, Dong-Geun; Boo, Jin-Hyo; Lee, Nae-Eung

    2008-08-01

    ZnO and Al-doped ZnO (AZO) were etched in Cl2/CH4/H2/Ar (Cl2-based) and BCl3/CH4/H2/Ar (BCl3-based), inductively coupled plasmas (ICPs) and their etching characteristics were compared by varying the Cl2/(Cl2+CH4) and BCl3/(BCl3+CH4) flow ratios, top electrode power and dc self-bias voltage (Vdc). The etch rates of both ZnO and AZO layers were higher in the Cl2-based chemistry than in the BCl3-based chemistry. The AZO and ZnO etch rates were increased and decreased, respectively, with increasing Cl2 or BCl3 flow ratio. Optical emission measurements of the radical species in the plasma and surface binding states by optical emission spectroscopy (OES) and X-ray photoelectron spectroscopy (XPS), respectively, indicated that, with increasing Cl2 or BCl3 flow ratio; the effective removal of Al in the AZO enhanced the AZO etch rate, whereas the reduced removal of Zn by the Zn(CHx)y products reduced the ZnO etch rate.

  17. Dependence on pressure of the refractive indices of wurtzite ZnO, GaN, and AlN

    SciTech Connect

    Goni, AR; Kaess, F; Reparaz, JS; Alonso, MI; Garriga, M; Callsen, G; Wagner, MR; Hoffmann, A; Sitar, Z

    2014-07-25

    We have measured both the ordinary and extraordinary refractive index of m-plane cuts of wurtzite ZnO, GaN, and AlN single crystals at room temperature and as a function of hydrostatic pressure up to 8 GPa. For that purpose we have developed an alternative optical interference method, called bisected-beam method, which leads, in general, to high contrast interference fringes. Its main feature, however, is to be particularly suitable for high pressure experiments with the diamond anvil cell, when the refractive index of the sample is low and similar to that of diamond and/or the pressure transmitting medium, as is the case here. For all three wide-gap materials we observe a monotonous decrease of the ordinary and extraordinary refractive indices with increasing pressure, being most pronounced for GaN, less marked for ZnO, and the smallest for AlN. The frequency dependence of the refractive indices was extrapolated to zero energy using a critical-point-plus-Lorentz-oscillator model of the ordinary and extraordinary dielectric function. In this way, we determined the variation with pressure of the electronic part (no-phonon contribution) of the static dielectric constant epsilon(infinity). Its volume derivative, r = d ln epsilon(infinity)/d ln V, serves as single scaling coefficient for comparison with experimental and/or theoretical results for other semiconductors, regarding the pressure effects on the dielectric properties. We have obtained an ordinary/extraordinary average value (r) over bar of 0.49(15) for ZnO, 1.22(9) for GaN, and 0.32(4) for AlN. With the values for the ordinary and extraordinary case being within experimental uncertainty, there is thus no apparent change in dielectric anisotropy under pressure for these wurtzite semiconductors. Results are discussed in terms of the pressure-dependent electronic band structure of the materials.

  18. Dependence on pressure of the refractive indices of wurtzite ZnO, GaN, and AlN

    NASA Astrophysics Data System (ADS)

    Goñi, A. R.; Kaess, F.; Reparaz, J. S.; Alonso, M. I.; Garriga, M.; Callsen, G.; Wagner, M. R.; Hoffmann, A.; Sitar, Z.

    2014-07-01

    We have measured both the ordinary and extraordinary refractive index of m-plane cuts of wurtzite ZnO, GaN, and AlN single crystals at room temperature and as a function of hydrostatic pressure up to 8 GPa. For that purpose we have developed an alternative optical interference method, called bisected-beam method, which leads, in general, to high contrast interference fringes. Its main feature, however, is to be particularly suitable for high pressure experiments with the diamond anvil cell, when the refractive index of the sample is low and similar to that of diamond and/or the pressure transmitting medium, as is the case here. For all three wide-gap materials we observe a monotonous decrease of the ordinary and extraordinary refractive indices with increasing pressure, being most pronounced for GaN, less marked for ZnO, and the smallest for AlN. The frequency dependence of the refractive indices was extrapolated to zero energy using a critical-point-plus-Lorentz-oscillator model of the ordinary and extraordinary dielectric function. In this way, we determined the variation with pressure of the electronic part (no-phonon contribution) of the static dielectric constant ɛ∞. Its volume derivative, r =dlnɛ∞/dlnV, serves as single scaling coefficient for comparison with experimental and/or theoretical results for other semiconductors, regarding the pressure effects on the dielectric properties. We have obtained an ordinary/extraordinary average value r¯ of 0.49(15) for ZnO, 1.22(9) for GaN, and 0.32(4) for AlN. With the values for the ordinary and extraordinary case being within experimental uncertainty, there is thus no apparent change in dielectric anisotropy under pressure for these wurtzite semiconductors. Results are discussed in terms of the pressure-dependent electronic band structure of the materials.

  19. Optical and spectroscopic characterization of Er3+-Yb3+co-doped tellurite glasses and fibers

    NASA Astrophysics Data System (ADS)

    Narro-García, R.; Desirena, H.; Chillcce, E. F.; Barbosa, L. C.; Rodriguez, E.; De la Rosa, E.

    2014-04-01

    Optical and spectroscopic properties of Er3+-Yb3+ co-doped TeO2-WO3-Nb2O5-Na2O-Al2O3 glasses and fibers were investigated. Emission spectra and fluorescence lifetimes of 4I13/2 level of Er3+ion as a function of rare earth concentration and fiber length were measured in glasses. Results show that the self-absorption effect broadens the spectral bandwidth of 4I13/2→4I15/2 transition and lengthens the lifetime significantly from 3.5 to 4.6 ms. Fibers were fabricated by the rod-in-tube technique using a Heathway drawing tower. The emission power of these Er3+-Yb3+ co-doped Step Index Tellurite Fibers (SITFs; lengths varying from 2 to 60 cm) were generated by a 980 nm diode laser pump and then the emission power spectra were acquired with an OSA. The maximum emission power spectra, within the 1530-1560 nm region, were observed for fiber lengths ranging from 3 to 6 cm. The highest bandwidth obtained was 108 nm for 8 cm fiber length around 1.53 µm.

  20. Site location of Al-dopant in ZnO lattice by exploiting the structural and optical characterisation of ZnO:Al thin films

    NASA Astrophysics Data System (ADS)

    Nakrela, A.; Benramdane, N.; Bouzidi, A.; Kebbab, Z.; Medles, M.; Mathieu, C.

    The zinc oxide thin films, highly transparent, doped aluminium were prepared on glass substrates by the reactive chemical spray method. The incorporation nature of Al atoms in the ZnO lattice was determined by X-ray diffraction and optical analyses. Indeed, for low doping ⩽2%, the results of X-ray spectra analysis show a simultaneous reduction of lattice parameters (a and c), this variation, which follows VEGARD's law, tends to indicate a substitution of Zn by Al. By against for doping >2% the increase in the lattice parameters thus the grain sizes, in accordance with the VEGARD's law can be explained by occupation of the interstitial sites by Al atoms. Beyond 4%, the material tends to get disorderly and the crystallites orientation is random. The studied optical properties show that the variation of the optical gap follows a law of the x3/2 form for x < 3% (x is the aluminium atom fraction incorporated in the ZnO lattice). The granular structure is fairly visible and some local growths are disrupted. The crystallite size at low enlargement is coherent with the XRD results.

  1. Formation of a ZnO overlayer in industrial Cu/ZnO/Al2 O3 catalysts induced by strong metal-support interactions.

    PubMed

    Lunkenbein, Thomas; Schumann, Julia; Behrens, Malte; Schlögl, Robert; Willinger, Marc G

    2015-04-01

    In industrially relevant Cu/ZnO/Al2 O3 catalysts for methanol synthesis, the strong metal support interaction between Cu and ZnO is known to play a key role. Here we report a detailed chemical transmission electron microscopy study on the nanostructural consequences of the strong metal support interaction in an activated high-performance catalyst. For the first time, clear evidence for the formation of metastable "graphite-like" ZnO layers during reductive activation is provided. The description of this metastable layer might contribute to the understanding of synergistic effects between the components of the Cu/ZnO/Al2 O3 catalysts. PMID:25683230

  2. Crystal Structure and Optical Properties of Al-Doped ZnO Large-Area Thin Films Using 1500 mm Dual Cylindrical Cathodes.

    PubMed

    Lee, JinJu; Ha, Jong-Yoon; Yim, Haena; Choi, Won-Kook; Choi, Ji-Won

    2015-11-01

    The large-area Al-doped ZnO thin films are successfully deposited at room temperature on polycarbonate substrate using a 1500 mm dual cylindrical cathodes sputtering system. Those thin films have smooth surfaces (RMS: 9.6 nm) and lower thicknesses deviation (Uniformity: 98.6%) despite of high RF power. The optical transmittance properties of 3.13 wt% Al doped ZnO thin films have above 85% in visible region. A dual cylindrical cathodes sputtering system can fabricate transparent electrode on flexible electronic devices at room temperature for mass production of 6th generation solar cell and display industry. PMID:26726519

  3. Comparative study on beryllium and magnesium as a co-doping element for ZnO:N

    NASA Astrophysics Data System (ADS)

    Yu-Quan, Su; Ming-Ming, Chen; Long-Xing, Su; Yuan, Zhu; Zi-Kang, Tang

    2016-06-01

    Stable nitrogen doping is an important issue in p-type ZnO research for device applications. In this paper, beryllium and magnesium are systematically compared as a dopant in ZnO to reveal their nitrogen-stabilizing ability. Secondary ion mass spectrum shows that Be and Mg can both enhance the stability of nitrogen in ZnO while Be has a better performance. Zn 2p and O 1s electron binding energies change in both MgZnO and BeZnO thin films. Donor-acceptor luminescence is observed in the BeZnO samples. We conclude that Be is a better co-doping element than Mg for p-type ZnO:N. Project supported by the National Key Basic Research Program of China (Grant No. 2011CB302000), the National Natural Science Foundation of China (Grant Nos. 51232009 and 51202299), the Fundamental Research Funds for the Central Universities, China (Grant No. 11lgpy16), the Natural Science Foundation for Jiangsu Provincial Higher Education, Institutions of China (Grant No. 15KJB510005), and the Talent Fund of Jiangsu University, China (Grant No. 15JDG042).

  4. Electronic structure of Al- and Ga-doped ZnO films studied by hard X-ray photoelectron spectroscopy

    SciTech Connect

    Gabás, M.; Ramos Barrado, José R.; Torelli, P.; Barrett, N. T.

    2014-01-01

    Al- and Ga-doped sputtered ZnO films (AZO, GZO) are semiconducting and metallic, respectively, despite the same electronic valence structure of the dopants. Using hard X-ray photoelectron spectroscopy we observe that both dopants induce a band in the electronic structure near the Fermi level, accompanied by a narrowing of the Zn 3d/O 2p gap in the valence band and, in the case of GZO, a substantial shift in the Zn 3d. Ga occupies substitutional sites, whereas Al dopants are in both substitutional and interstitial sites. The latter could induce O and Zn defects, which act as acceptors explaining the semiconducting character of AZO and the lack of variation in the optical gap. By contrast, mainly substitutional doping is consistent with the metallic-like behavior of GZO.

  5. On performance limitations and property correlations of Al-doped ZnO deposited by radio-frequency sputtering

    NASA Astrophysics Data System (ADS)

    Crovetto, Andrea; Sand Ottsen, Tobias; Stamate, Eugen; Kjær, Daniel; Schou, Jørgen; Hansen, Ole

    2016-07-01

    The electrical properties of RF-sputtered Al-doped ZnO are often spatially inhomogeneous and strongly dependent on deposition parameters. In this work, we study the mechanisms that limit the minimum resistivity achievable under different deposition regimes. In a low- and intermediate-pressure regime, we find a generalized dependence of the electrical properties, grain size, texture, and Al content on compressive stress, regardless of sputtering pressure or position on the substrate. In a high-pressure regime, a porous microstructure limits the achievable resistivity and causes it to increase over time as well. The primary cause of inhomogeneity in the electrical properties is identified as energetic particle bombardment. Inhomogeneity in oxygen content is also observed, but its effect on the electrical properties is small and limited to the carrier mobility.

  6. High rate reactive magnetron sputter deposition of Al-doped ZnO with unipolar pulsing and impedance control system

    SciTech Connect

    Nishi, Yasutaka; Hirohata, Kento; Tsukamoto, Naoki; Sato, Yasushi; Oka, Nobuto; Shigesato, Yuzo

    2010-07-15

    Al-doped ZnO (AZO) films were deposited on quartz glass substrates, unheated and heated to 200 deg. C, using reactive sputtering with a special feedback system of discharge impedance combined with midfrequency pulsing. A planar Zn-Al alloy target was connected to the switching unit, which was operated in a unipolar pulse mode. The oxidation of the target surface was precisely controlled by a feedback system for the entire O{sub 2} flow ratio including ''the transition region''. The deposition rate was about 10-20 times higher than that for films deposited by conventional sputtering using an oxide target. A deposition rate of AZO films of 390 nm/min with a resistivity of 3.8x10{sup -4} {Omega} cm and a transmittance in the visible region of 85% was obtained when the films were deposited on glass substrates heated to 200 deg. C with a discharge power of 4 kW.

  7. Characteristics of ZnO thin films doped by various elements

    NASA Astrophysics Data System (ADS)

    Kahraman, S.; Çakmak, H. M.; Çetinkaya, S.; Bayansal, F.; Çetinkara, H. A.; Güder, H. S.

    2013-01-01

    We have investigated the effects of Al, K and Co dopant elements on the properties of ZnO thin films deposited by CBD method on glass substrates. Changing in morphology, structural parameters, ionization energies of impurity levels, absorption behavior and optical band gap values were investigated through scanning electron microscopy (SEM), X-Ray diffraction (XRD), resistance-temperature measurement (R-T) and ultraviolet-visible spectroscopy (UV-vis) techniques. From the SEM observations, various morphologies (rod-like, flower-like and rice-like) were observed. Those morphological variations were attributed to the change in stable growth mechanism of intrinsic ZnO, induced by different atomic radius and different electronegativity of dopants. XRD results indicated that all orientations are well indexed to hexagonal phase crystalline ZnO. The impurity level ionization energy values (ΔE) were estimated as 0.32/0.13/0.07 eV; 0.34/0.15 eV; 0.40/0.13 eV and 0.48/0.22 eV for the Al, K, Co doped samples and i-ZnO, respectively. Optical band gap values were found that the doped samples' were higher than the intrinsic one's. This increasing (blue shift) was attributed to a deterioration which occurred in the lattice of the structures after doping. This effect was also supported by the structural results.

  8. Catalyst-Free Direct Vapor-Phase Growth of Hexagonal ZnO Nanowires on α-Al2O3

    NASA Astrophysics Data System (ADS)

    Hullavarad, S. S.; Hullavarad, N. V.; Vispute, R. D.; Venkatesan, T.; Kilpatrick, S. J.; Ervin, M. H.; Nichols, B.; Wickenden, A. E.

    2010-08-01

    The evolution of ZnO nanowires has been studied under supersaturation of Zn metal species with and without a ZnO thin-film buffer layer on α-Al2O3 deposited by the pulsed laser ablation technique. The nanowires had diameters in the range of 30 nm to 50 nm and lengths in the range of 5 μm to 10 μm with clear hexagonal shape and [000bar{1}] , [10bar{1}1] , and [10bar{1}0] facets. X-ray diffraction (XRD) measurements indicated crystalline properties for the ZnO nanostructures grown on pulsed laser deposition (PLD) ZnO nucleation layers. The optical properties were analyzed by photoluminescence (PL) and cathodoluminescence (CL) measurements. The ZnO nanowires were found to emit strong ultraviolet (UV) light at 386 nm and weak green emission as observed by PL measurements. The stoichiometry of Zn and O was found to be close to 1 by x-ray photoelectron spectroscopy (XPS) measurements. The process-dependent growth properties of ZnO nanostructures can be harnessed for future development of nanoelectronic components including optically pumped lasers, optical modulators, detectors, electron emitters, and gas sensors.

  9. On the variations of optical property and electronic structure in heavily Al-doped ZnO films during double-step growth process

    SciTech Connect

    Hu, Q. C.; Ding, K. Zhang, J. Y.; Yan, F. P.; Pan, D. M.; Huang, F.; Chiou, J. W.

    2014-01-13

    We have investigated the variations of optical property and electronic structure in heavily Al-doped ZnO (AZO) films during the growth process, which were formed by first creating Zn vacancies in O{sub 2}-rich atmosphere and second filling the vacancies with Zn atoms in Zn-vapor atmosphere. After the first step, the high-resistance AZO films have the same optical bandgap with nominally undoped ZnO, indicating that negligible variations in the fundamental bandgap happened to the AZO films although Al atom was incorporated into the ZnO lattice. After the second step, once free electrons were brought into the lattice by Zn-filling, the optical transition energy blueshifts due to the band-filling effect. X-ray absorption fine structure measurements suggest that Zn-filling process decreased the unoccupied states of the conduction band, but not raised the conduction band minimum.

  10. Effects of N- and N-In doping on ZnO films prepared by using ultrasonic spray pyrolysis

    NASA Astrophysics Data System (ADS)

    Wang, Qun; Park, Se-Jeong; Shin, Dong-Myeong; Kim, Hyung-Kook; Hwang, Yoon-Hwae; Zhang, Yiwen; Li, Xiaomin

    2014-12-01

    The effects of N-doping, and N-In co-doping on ZnO films were studied by analyzing the structural, electrical, and optical properties of the films prepared by using an ultrasonic spray pyrolysis (USP) method. According to scanning electron microscopy (SEM) data, all films had very complex surface structures. Their polycrystallinity were also proven by using an X-ray diffraction method. The Hall-effect measurement showed that both the undoped and the N-doped ZnO films exhibited n-type conductivity and that the N-In co-doped ZnO film showed p-type conductivity. In the extended X-ray absorption fine structure (EXAFS) analysis, the number of oxygen atoms in the N-In codoped ZnO films was found to be larger than that in the N-doped and the undoped ZnO films. The photoluminescence spectra also showed that the N-In co-doping suppressed the concentration of oxygen vacancies in the ZnO films. Through an effective incorporation of indium atoms, more oxygen atoms seem to have been introduced into the lattice of the N-In co-doped ZnO films.

  11. Nitrogen and Phosphorous Co-Doped Graphene Monolith for Supercapacitors.

    PubMed

    Wen, Yangyang; Rufford, Thomas E; Hulicova-Jurcakova, Denisa; Wang, Lianzhou

    2016-03-01

    The co-doping of heteroatoms has been regarded as a promising approach to improve the energy-storage performance of graphene-based materials because of the synergetic effect of the heteroatom dopants. In this work, a single precursor melamine phosphate was used for the first time to synthesise nitrogen/phosphorus co-doped graphene (N/P-G) monoliths by a facile hydrothermal method. The nitrogen contents of 4.27-6.58 at% and phosphorus levels of 1.03-3.00 at% could be controlled by tuning the mass ratio of melamine phosphate to graphene oxide in the precursors. The N/P-G monoliths exhibited excellent electrochemical performances as electrodes for supercapacitors with a high specific capacitance of 183 F g(-1) at a current density of 0.05 A g(-1), good rate performance and excellent cycling performance. Additionally, the N/P-G electrode was stable at 1.6 V in 1 m H2 SO4 aqueous electrolyte and delivered a high energy density of 11.33 Wh kg(-1) at 1.6 V. PMID:26834002

  12. Formation energy of oxygen vacancies in ZnO determined by investigating thermal behavior of Al and In impurities

    SciTech Connect

    Komatsuda, S.; Sato, W.; Ohkubo, Y.

    2014-11-14

    Thermal behavior and interacting nature of 100-ppm Al and ∼100-ppt In impurities doped in zinc oxide (ZnO) were investigated by means of the time-differential perturbed angular correlation method with the {sup 111}In(→{sup 111}Cd) probe. Contrasting interactions between Al and In impurities were observed depending on different atmospheric conditions: (1) in air, Al and In impurities irreversibly associate with each other in the process of their thermal diffusion, but (2) in vacuum, their bound state formed in air dissociates by heat treatment at temperatures higher than 873 K, and this process is enhanced with increasing temperature. Detailed investigation of the thermal behavior of the impurities has revealed that the dissociation reaction is triggered by the formation of oxygen vacancies in the vicinity of the locally associated In-Al structure. A unique method to determine the activation energy of the oxygen-vacancy formation is presented with the estimated experimental value of E{sub a} = 0.72(6) eV.

  13. Structural and optical properties of Al-doped ZnO films coated by RF magnetron sputtering

    NASA Astrophysics Data System (ADS)

    Wu, Yue-Bo; Huang, Bo; Zhang, Liang-Tang; Li, Jing; Wu, Sun-Tao

    2007-12-01

    The Al-doped ZnO (AZO) films were deposited on glass by RF magnetron sputtering under different sputtering power: 75W, 120W, 160W and 200W. During the films deposition, the other sputtering conditions were maintained constant. The crystal structures of the AZO films were characterized and analyzed by X-ray diffraction. The surface morphologies of the films were observed by SEM. The transmission spectra of the films were measured using a spectrophotometer within the range from 200 to 800 nm at room temperature. The results indicate each of the films has a preferential c-axis orientation and the grain size increases with the increase of sputtering power. All the films exhibit a high transmittance in visible region and have sharp ultraviolet absorption characteristics.

  14. Environmental stability of solution processed Al-doped ZnO naoparticulate thin films using surface modification technique

    NASA Astrophysics Data System (ADS)

    Vunnam, Swathi; Ankireddy, Krishnamraju; Kellar, Jon; Cross, William

    2014-12-01

    The environmental stability of solution processed Al-doped ZnO (AZO) thin films was enhanced by functionalizing the film surface with a thin self-assembled molecular layer. Functionalization of AZO films was performed using two types of molecules having identical 12-carbon alkyl chain termination but different functional groups: dodecanethiol (DDT) and dodecanoic acid (DDA). Surface modified AZO films were examined using electrical resistivity measurements, contact angle measurements and quantitative nanomechanical property mapping atomic force microscopy. The hydrophobic layer inhibits the penetration of oxygen and water into the AZO's grain boundaries thus significantly increasing the environmental stability over unmodified AZO. Surface modified AZO films using DDT exhibited lower electrical resistivity compared to DDA functionalized AZO films. Our study demonstrates a new approach for improving the physical properties of oxide based nanoparticulate films for device applications.

  15. Characteristics of the electromagnetic interference shielding effectiveness of Al-doped ZnO thin films deposited by atomic layer deposition

    NASA Astrophysics Data System (ADS)

    Choi, Yong-June; Gong, Su Cheol; Johnson, David C.; Golledge, Stephen; Yeom, Geun Young; Park, Hyung-Ho

    2013-03-01

    The structural, optical, and electrical properties of Al-doped ZnO (ZnO:Al) thin films deposited by atomic layer deposition (ALD) with a modified precursor pulse sequence were investigated to evaluate the electromagnetic interference shielding effectiveness (EMI-SE). A Zn-Al-O precursor exposure sequence was used in a modified ALD procedure to result in better distribution of Al3+ ions in the ZnO matrix with the aim of reducing the formation of complete nano-laminated structures that may form in the typical alternating ZnO and Al2O3 deposition procedure. The ALD dopant concentration of the ZnO:Al films was varied by adjusting the dopant deposition intervals of the ZnO:Znsbnd Alsbnd O precursor pulse cycle ratios among 24:1, 19:1, 14:1, and 9:1. The lowest obtained resistivity and average transmittance in the visible region (380-780 nm) were 5.876 × 10-4 Ω cm (carrier concentration of 6.02 × 1020 cm-3 and Hall mobility of 17.65 cm2/V s) and 85.93% in the 131 nm thick ZnO:Al(19:1) film, respectively. The average value of the EMI-SE in the range of 30 MHz to 1.5 GHz increased from 1.1 dB for the 121 nm thick undoped ZnO film to 6.5 dB for the 131 nm thick ZnO:Al(19:1) film.

  16. Thermoelectric properties optimization of Al-doped ZnO thin films prepared by reactive sputtering Zn-Al alloy target

    NASA Astrophysics Data System (ADS)

    Fan, Ping; Li, Ying-zhen; Zheng, Zhuang-hao; Lin, Qing-yun; Luo, Jing-ting; Liang, Guang-xing; Zhang, Miao-qin; Chen, Min-cong

    2013-11-01

    Al-doped ZnO (AZO) has practical applications in the industry for thermoelectric generation, owing to its nontoxicity, low-cost and stability at high temperatures. In this study, AZO thin films with high quality were deposited on BK7 glass substrates at room-temperature by direct current reactive magnetron sputtering using Zn-Al alloy target. The deposited thin films were annealed at various temperatures ranging from 623 K to 823 K with a space of 50 K. It is found that the absolute value of Seebeck coefficient of AZO thin film annealed at 723 K increases stably with increasing of measuring temperature and reaches a value of ∼60 μV/K at 575 K. After that, Al-doping content was varied to further optimize the thermoelectric properties of AZO thin films. The power factor of AZO thin films with Al content of 3 wt% increased with increase of measuring temperature and the maximum power factor of 1.54 × 10-4 W m-1K-2 was obtained at 550 K with the maximum absolute values of Seebeck coefficient of 99 μV/K, which is promising for high temperature thermoelectric application.

  17. Tuning the metal-insulator transition via epitaxial strain and Co doping in NdNiO3 thin films grown by polymer-assisted deposition

    NASA Astrophysics Data System (ADS)

    Yao, Dan; Shi, Lei; Zhou, Shiming; Liu, Haifeng; Zhao, Jiyin; Li, Yang; Wang, Yang

    2016-01-01

    The epitaxial NdNi1-xCoxO3 (0 ≤ x ≤ 0.10) thin films on (001) LaAlO3 and (001) SrTiO3 substrates were grown by a simple polymer-assisted deposition technique. The co-function of the epitaxial strain and Co doping on the metal-insulator transition in perovskite nickelate NdNiO3 thin films is investigated. X-ray diffraction and scanning electron microscopy reveal that the as-prepared thin films exhibit good crystallinity and heteroepitaxy. The temperature dependent resistivities of the thin films indicate that both the epitaxial strain and Co doping lower the metal-insulator (MI) transition temperature, which can be treated as a way to tune the MI transition. Furthermore, under the investigated Co-doping levels, the MI transition temperature (TMI) shifts to low temperatures with Co content increasing under both compressive and tensile strain, and the more distinction is in the former situation. When x is increased up to 0.10, the insulating phase is completely suppressed under the compressive strain. With the strain increases from compression to tension, the resistivities are enhanced both in the metal and insulating regions. However, the Co-doping effect on the resistivity shows a more complex situation. As Co content x increases from zero to 0.10, the resistivities are reduced both in the metal and insulating regions under the tensile strain, whereas they are enhanced in the high-temperature metal region under the compressive strain. Based on the temperature dependent resistivity in the metal regions, it is suggested that the electron-phonon coupling in the films becomes weaker with the increase of both the strain and Co-doping.

  18. Controlling the surface nanostructure of ZnO and Al-doped ZnO thin films using electrostatic spraying for their application in 12% efficient perovskite solar cells.

    PubMed

    Mahmood, Khalid; Swain, Bhabani Sankar; Jung, Hyun Suk

    2014-08-01

    In this paper, ZnO and Al-doped ZnO films were deposited using the electrospraying method and studied for the first time as photoanodes for efficient perovskite solar cells. Effects of substrate temperature, deposition time, applied voltage, substrate-to-nozzle distance and flow rate (droplet size) on the morphology of ZnO were studied with the help of FE-SEM images. The major factors such as the droplet size of the spray, substrate temperature and substrate-to-nozzle distance at deposition control the film morphology. Indeed, these factors determine the density of the film, its smoothness and the flow of solution over the substrate. The droplet size was controlled by the flow rate of the spray. The substrate-to-nozzle distance and flow rate will both regulate the solution amount deposited on the surface of the substrate. The most favorable conditions for a good quality ZnO thin film were a long substrate-to-nozzle distance and lower solution flow rates. In situ droplet size measurement shows that the size and dispersion of particles were narrowed. The method was shown to have a high deposition rate and efficiency relative to well-established thin film deposition techniques such as chemical and physical vapor deposition. In addition, it also allows easy control of the microstructure and stoichiometry of the deposits. The pure ZnO film produced under optimum conditions (440 nm thick) demonstrated a high power conversion efficiency (PCE) of 10.8% when used as a photoanode for perovskite solar cells, owing to its high porosity, uniform morphology and efficient electron transport. For thicker films a drastic decrease in PCE was observed due to their low porosity. We also observed that the open-circuit voltage increases from 1010 mV to 1045 mV and also the PCE increases from 10.8% to 12.0% when pure ZnO films were doped with aluminum (Al). Under atmospheric pressure, the electrospraying system produces the reasonably uniform-sized droplets of smaller size, so the films

  19. Dynamics of iron-acceptor-pair formation in co-doped silicon

    SciTech Connect

    Bartel, T.; Gibaja, F.; Graf, O.; Gross, D.; Kaes, M.; Heuer, M.; Kirscht, F.; Möller, C.; Lauer, K.

    2013-11-11

    The pairing dynamics of interstitial iron and dopants in silicon co-doped with phosphorous and several acceptor types are presented. The classical picture of iron-acceptor pairing dynamics is expanded to include the thermalization of iron between different dopants. The thermalization is quantitatively described using Boltzmann statistics and different iron-acceptor binding energies. The proper understanding of the pairing dynamics of iron in co-doped silicon will provide additional information on the electronic properties of iron-acceptor pairs and may become an analytical method to quantify and differentiate acceptors in co-doped silicon.

  20. Controlling the surface nanostructure of ZnO and Al-doped ZnO thin films using electrostatic spraying for their application in 12% efficient perovskite solar cells

    NASA Astrophysics Data System (ADS)

    Mahmood, Khalid; Swain, Bhabani Sankar; Jung, Hyun Suk

    2014-07-01

    In this paper, ZnO and Al-doped ZnO films were deposited using the electrospraying method and studied for the first time as photoanodes for efficient perovskite solar cells. Effects of substrate temperature, deposition time, applied voltage, substrate-to-nozzle distance and flow rate (droplet size) on the morphology of ZnO were studied with the help of FE-SEM images. The major factors such as the droplet size of the spray, substrate temperature and substrate-to-nozzle distance at deposition control the film morphology. Indeed, these factors determine the density of the film, its smoothness and the flow of solution over the substrate. The droplet size was controlled by the flow rate of the spray. The substrate-to-nozzle distance and flow rate will both regulate the solution amount deposited on the surface of the substrate. The most favorable conditions for a good quality ZnO thin film were a long substrate-to-nozzle distance and lower solution flow rates. In situ droplet size measurement shows that the size and dispersion of particles were narrowed. The method was shown to have a high deposition rate and efficiency relative to well-established thin film deposition techniques such as chemical and physical vapor deposition. In addition, it also allows easy control of the microstructure and stoichiometry of the deposits. The pure ZnO film produced under optimum conditions (440 nm thick) demonstrated a high power conversion efficiency (PCE) of 10.8% when used as a photoanode for perovskite solar cells, owing to its high porosity, uniform morphology and efficient electron transport. For thicker films a drastic decrease in PCE was observed due to their low porosity. We also observed that the open-circuit voltage increases from 1010 mV to 1045 mV and also the PCE increases from 10.8% to 12.0% when pure ZnO films were doped with aluminum (Al). Under atmospheric pressure, the electrospraying system produces the reasonably uniform-sized droplets of smaller size, so the films

  1. Selective growth of catalyst-free ZnO nanowire arrays on Al:ZnO for device application

    SciTech Connect

    Chung, T. F.; Luo, L. B.; He, Z. B.; Leung, Y. H.; Shafiq, I.; Yao, Z. Q.; Lee, S. T.

    2007-12-03

    Vertically aligned ZnO nanowire (NW) arrays have been synthesized selectively on patterned aluminum-doped zinc oxide (AZO) layer deposited on silicon substrates without using any metal catalysts. The growth region was defined by conventional photolithography with an insulating template. Careful control of the types of template materials and growth conditions allows good alignment and growth selectivity for ZnO NW arrays. Sharp ultraviolet band-edge peak observed in the photoluminescence spectra of the patterned ZnO NW arrays reveals good optical qualities. The current-voltage characteristics of ZnO NWs/AZO/p-Si device suggest that patterned and aligned ZnO NW arrays on AZO may be used in optoelectronic devices.

  2. Effect of different dopant elements (Al, Mg and Ni) on microstructural, optical and electrochemical properties of ZnO thin films deposited by spray pyrolysis (SP)

    NASA Astrophysics Data System (ADS)

    Benzarouk, Hayet; Drici, Abdelaziz; Mekhnache, Mounira; Amara, Abdelaziz; Guerioune, Mouhamed; Bernède, Jean Christian; Bendjffal, Hacen

    2012-09-01

    In the present work we studied the influence of the dopant elements and concentration on the microstructural and electrochemical properties of ZnO thin films deposited by spray pyrolysis. Transparent conductive thin films of zinc oxide (ZnO) were prepared by the spray pyrolysis process using an aqueous solution of zinc acetate dehydrate [Zn(CH3COO)2·2H2O] on soda glass substrate heated at 400 ± 5 °C. AlCl3, MgCl2 and NiCl2 were used as dopant. The effect of doping percentage (2-4%) has been investigated. Afterwards the samples were thermally annealed in an ambient air during one hour at 500 °C. X-ray diffraction showed that films have a wurtzite structure with a preferential orientation along the (0 0 2) direction for doped ZnO. The lattice parameters a and c are estimated to be 3.24 and 5.20 Ǻ, respectively. Transmission allowed to estimate the band gaps of ZnO layers. The electrochemical studies revealed that the corrosion resistance of the films depended on the concentration of dopants.

  3. Effect of band gap energy on the electrical conductivity in doped ZnO thin film

    NASA Astrophysics Data System (ADS)

    Benramache, Said; Belahssen, Okba; Ben Temam, Hachemi

    2014-07-01

    The transparent conductive pure and doped zinc oxide thin films with aluminum, cobalt and indium were deposited by ultrasonic spray technique on glass substrate at 350 °C. This paper is to present a new approach to the description of correlation between electrical conductivity and optical gap energy with dopants' concentration of Al, Co and In. The correlation between the electrical and optical properties with doping level suggests that the electrical conductivity of the films is predominantly estimated by the band gap energy and the concentrations of Al, Co and In. The measurement in the electrical conductivity of doped films with correlation is equal to the experimental value, the error of this correlation is smaller than 13%. The minimum error value was estimated in the cobalt-doped ZnO thin films. This result indicates that such Co-doped ZnO thin films are chemically purer and have far fewer defects and less disorder owing to an almost complete chemical decomposition.

  4. Recombination luminescence and trap levels in undoped and Al-doped ZnO thin films on quartz and GaSe (0 0 0 1) substrates

    SciTech Connect

    Evtodiev, I.; Caraman, I.; Leontie, L.; Rusu, D.-I.; Dafinei, A.; Nedeff, V.; Lazar, G.

    2012-03-15

    Highlights: Black-Right-Pointing-Pointer ZnO films on GaSe create electron trapping states and PL recombination levels. Black-Right-Pointing-Pointer Zn and Al diffusion in GaSe produces low-energy widening of its PL emission. Black-Right-Pointing-Pointer ZnO:Al films on GaSe lamellas are suitable for gas-discharge lamp applications. -- Abstract: Photoluminescence spectra of ZnO and ZnO:Al (1.00, 2.00 and 5.00 at.%) films on GaSe (0 0 0 1) lamellas and amorphous quartz substrates, obtained by annealing, at 700 K, of undoped and Al-doped metal films, are investigated. For all samples, the nonequilibrium charge carriers recombine by radiative band-to-band transitions with energy of 3.27 eV, via recombination levels created by the monoionized oxygen atoms, forming the impurity band laying in the region 2.00 - 2.70 eV. Al doping induces an additional recombination level at 1.13 eV above the top of the valence band of ZnO films on GaSe substrates. As a result of thermal diffusion of Zn and Al into the GaSe interface layer from ZnO:Al/GaSe heterojunction, electron trap levels located at 0.22 eV and 0.26 eV below the conduction band edge of GaSe, as well as a deep recombination level, responsible for the luminescent emission in the region 1.10 - 1.40 eV, are created.

  5. Effect of Cobalt Concentration and Oxygen Vacancy on Magnetism of Co Doped ZnO Nanorods.

    PubMed

    Li, Congli; Che, Ping; Sun, Changyan; Li, Wenjun

    2016-03-01

    Zn(1-x)Co(x)O (x = 0-0.07) single-crystalline nanorods were prepared by a modified microemulsion route. The crystalline structure, morphology, optical, and hysteresis loop at low and room temperature of as-prepared materials were characterized by XRD, TEM, PL spectra, and magnetic measurement respectively. The nanorods are 80-250 nm in diameter and about 3 μm in length. X-ray diffraction data, TEM images confirm that the materials synthesized in optimal conditions are ZnO:Co single crystalline solid solution without any impurities related to Co. The PL spectra show that the ferromagnetic samples exhibit strong Zn interstitials and oxygen vacancy emission indicating defects may stabilize ferromagnetic order in the obtained diluted magnetic semiconductors. Magnetic measurements show that the Zn(1-x)Co(x)O nanorods exist obvious ferromagnetic characteristics with T(c) above 300 K. M(s) and coercivities first increase and then decrease with dopant concentration increasing, reaching the highest for 3% doping level. The structural and magnetic properties of these samples support the hypothesis that the FM of DMS nanorods is due to a defect mediated mechanism instead of cobalt nanoclusters and carrier mediated. PMID:27455697

  6. Highly transparent and conductive Al-doped ZnO nanoparticulate thin films using direct write processing

    NASA Astrophysics Data System (ADS)

    Vunnam, S.; Ankireddy, K.; Kellar, J.; Cross, W.

    2014-05-01

    Solution processable Al-doped ZnO (AZO) thin films are attractive candidates for low cost transparent electrodes. We demonstrate here an optimized nanoparticulate ink for the fabrication of AZO thin films using scalable, low-cost direct write processing (ultrasonic spray deposition) in air at atmospheric pressure. The thin films were made via thermal processing of as-deposited films. AZO films deposited using the proposed nanoparticulate ink with further reducing in vacuum and rf plasma of forming gas exhibited optical transparency greater than 95% across the visible spectrum, and electrical resistivity of 0.5 Ω cm and it drops down to 7.0 × 10-2 Ω cm after illuminating with UV light, which is comparable to commercially available tin doped indium oxide colloidal coatings. Various structural analyses were performed to investigate the influence of ink chemistry, deposition parameters, and annealing temperatures on the structural, optical, and electrical characteristics of the spray deposited AZO thin films. Optical micrographs confirmed the presence of surface defects and cracks using the AZO NPs ink without any additives. After adding N-(2-Aminoethyl)-3-aminopropylmethyldimethoxy silane to the ink, AZO films exhibited an optical transparency which was virtually identical to that of the plain glass substrate.

  7. Local probe microscopic studies on Al-doped ZnO: Pseudoferroelectricity and band bending at grain boundaries

    NASA Astrophysics Data System (ADS)

    Kumar, Mohit; Basu, Tanmoy; Som, Tapobrata

    2016-01-01

    In this paper, based on piezoforce measurements, we show the presence of opposite polarization at grains and grain boundaries of Al-doped ZnO (AZO). The polarization can be flipped by 180° in phase by switching the polarity of the applied electric field, revealing the existence of nanoscale pseudoferroelectricity in AZO grown on Pt/TiO2/SiO2/Si substrate. We also demonstrate an experimental evidence on local band bending at grain boundaries of AZO films using conductive atomic force microscopy and Kelvin probe force microscopy. The presence of an opposite polarization at grains and grain boundaries gives rise to a polarization-driven barrier formation at grain boundaries. With the help of conductive atomic force microscopy, we show that the polarization-driven barrier along with the defect-induced electrostatic potential barrier account for the measured local band bending at grain boundaries. The present study opens a new avenue to understand the charge transport in light of both polarization and electrostatic effects.

  8. Solution processed Al-doped ZnO nanoparticles/TiOx composite for highly efficient inverted organic solar cells.

    PubMed

    Gadisa, Abay; Hairfield, Travis; Alibabaei, Leila; Donley, Carrie L; Samulski, Edward T; Lopez, Rene

    2013-09-11

    We investigated the electrical properties of solution processed Al-doped ZnO (AZO) nanoparticles, stabilized by mixing with a TiOx complex. Thin solid films cast from the solution of AZO-TiOx (AZOTi) (Ti/Zn ∼0.4 in the bulk and ∼0.8 on its surface) is processable in inert environment, without a need for either ambient air exposure for hydrolysis or high temperature thermal annealing commonly applied to buffer layers of most metal-oxides. It was found that the electronic structure of AZOTi matches the electronic structure of several electron acceptor and donor materials used in organic electronic devices, such as solar cells. Inverted solar cells employing a bulk heterojunction film of poly(3-hexylthiophene) and phenyl-C61-butyric acid methyl ester, cast on an indium-tin-oxide/AZOTi electrode, and capped with a tungsten oxide/aluminum back electrode, give rise to a nearly 70% fill factor and an optimized open-circuit voltage as a result of efficient hole blocking behavior of AZOTi. The resulting electron collecting/blocking capability of this material solves crucial interfacial recombination issues commonly observed at the organic/metal-oxide interface in most inverted organic bulk heterojunction solar cells. PMID:23980825

  9. Highly transparent and conductive Al-doped ZnO nanoparticulate thin films using direct write processing.

    PubMed

    Vunnam, S; Ankireddy, K; Kellar, J; Cross, W

    2014-05-16

    Solution processable Al-doped ZnO (AZO) thin films are attractive candidates for low cost transparent electrodes. We demonstrate here an optimized nanoparticulate ink for the fabrication of AZO thin films using scalable, low-cost direct write processing (ultrasonic spray deposition) in air at atmospheric pressure. The thin films were made via thermal processing of as-deposited films. AZO films deposited using the proposed nanoparticulate ink with further reducing in vacuum and rf plasma of forming gas exhibited optical transparency greater than 95% across the visible spectrum, and electrical resistivity of 0.5 Ω cm and it drops down to 7.0 × 10(-2) Ω cm after illuminating with UV light, which is comparable to commercially available tin doped indium oxide colloidal coatings. Various structural analyses were performed to investigate the influence of ink chemistry, deposition parameters, and annealing temperatures on the structural, optical, and electrical characteristics of the spray deposited AZO thin films. Optical micrographs confirmed the presence of surface defects and cracks using the AZO NPs ink without any additives. After adding N-(2-Aminoethyl)-3-aminopropylmethyldimethoxy silane to the ink, AZO films exhibited an optical transparency which was virtually identical to that of the plain glass substrate. PMID:24763438

  10. All-inorganic colloidal silicon nanocrystals—surface modification by boron and phosphorus co-doping

    NASA Astrophysics Data System (ADS)

    Fujii, Minoru; Sugimoto, Hiroshi; Imakita, Kenji

    2016-07-01

    Si nanocrystals (Si-NCs) with extremely heavily B- and P-doped shells are developed and their structural and optical properties are studied. Unlike conventional Si-NCs without doping, B and P co-doped Si-NCs are dispersible in alcohol and water perfectly without any surface functionalization processes. The colloidal solution of co-doped Si-NCs is very stable and no precipitates are observed for more than 5 years. The co-doped colloidal Si-NCs exhibit size-controllable photoluminescence (PL) in a very wide energy range covering 0.85 to 1.85 eV. In this paper, we summarize the structural and optical properties of co-doped Si-NCs and demonstrate that they are a new type of environmentally-friendly nano-light emitter working in aqueous environments in the visible and near infrared (NIR) ranges.

  11. All-inorganic colloidal silicon nanocrystals-surface modification by boron and phosphorus co-doping.

    PubMed

    Fujii, Minoru; Sugimoto, Hiroshi; Imakita, Kenji

    2016-07-01

    Si nanocrystals (Si-NCs) with extremely heavily B- and P-doped shells are developed and their structural and optical properties are studied. Unlike conventional Si-NCs without doping, B and P co-doped Si-NCs are dispersible in alcohol and water perfectly without any surface functionalization processes. The colloidal solution of co-doped Si-NCs is very stable and no precipitates are observed for more than 5 years. The co-doped colloidal Si-NCs exhibit size-controllable photoluminescence (PL) in a very wide energy range covering 0.85 to 1.85 eV. In this paper, we summarize the structural and optical properties of co-doped Si-NCs and demonstrate that they are a new type of environmentally-friendly nano-light emitter working in aqueous environments in the visible and near infrared (NIR) ranges. PMID:27189818

  12. The mechanism of long phosphorescence of SrAl{sub 2-x}B{sub x}O{sub 4} (0Al{sub 14-x}B{sub x}O{sub 25} (0.1co-doped with Eu{sup 2+} and Dy{sup 3+}

    SciTech Connect

    Nag, Abanti; Kutty, T.R.N

    2004-03-01

    The role of B{sub 2}O{sub 3} in realizing the long phosphorescence of Eu(II)+Dy(III) doped strontium aluminates has been investigated. IR and solid state {sup 27}Al MAS NMR spectra show the incorporation of boron as BO{sub 4} in the AlO{sub 4} framework of SrAl{sub 2}O{sub 4} and Sr{sub 4}Al{sub 14}O{sub 25}. Phosphor, made free of glassy phases by washing with hot acetic acid+glycerol, did not show any photoconductivity under UV irradiation, indicating that the mechanism involving hole conduction in valence band is untenable for long phosphorescence. EPR studies confirm the presence of both electron and hole trap centers. Dy{sup 3+} forms substitutional defect complex with borate; [Dy-BO{sub 4}-V{sub Sr}]{sup 2-}, and acts as a hole trap center. The electron centers are formed by the oxygen vacancies associated with BO{sub 3}{sup 3-}, i.e. [BO{sub 3}-V{sub O}]{sup 3-}. Under indigo light or near UV irradiation, the photoinduced electron centers are formed as [BO{sub 3}-V{sub O}(e')]{sup 4-}. The holes are released from [Dy-BO{sub 4}-V{sub Sr}(h{center_dot})]{sup 1-} under thermal excitation at room temperature. The recombination of electrons with holes releases energy which is expended to excite Eu{sup 2+} to induce long phosphorescence.

  13. Evolution of dielectric function of Al-doped ZnO thin films with thermal annealing: effect of band gap expansion and free-electron absorption.

    PubMed

    Li, X D; Chen, T P; Liu, Y; Leong, K C

    2014-09-22

    Evolution of dielectric function of Al-doped ZnO (AZO) thin films with annealing temperature is observed. It is shown that the evolution is due to the changes in both the band gap and the free-electron absorption as a result of the change of free-electron concentration of the AZO thin films. The change of the electron concentration could be attributed to the activation of Al dopant and the creation/annihilation of the donor-like defects like oxygen vacancy in the thin films caused by annealing. PMID:25321779

  14. Double Rare-Earth Oxides Co-doped Strontium Zirconate as a New Thermal Barrier Coating Material

    NASA Astrophysics Data System (ADS)

    Ma, Wen; Wang, Dongxing; Dong, Hongying; Lun, Wenshan; He, Weiyan; Zheng, Xuebin

    2013-03-01

    Y2O3 and Yb2O3 co-doped strontium zirconate with chemistry of Sr(Zr0.9Y0.05Yb0.05)O2.95 (SZYY) was synthesized and had a minor second phase of Yb2O3. The SZYY showed good phase stability not only from room temperature to 1400 °C but also at high temperature of 1450 °C for a long period, analyzed by thermogravimetry-differential scanning calorimetry and x-ray diffraction, respectively. The coefficients of thermal expansion (CTEs) of the sintered bulk SZYY were recorded by a high-temperature dilatometer and revealed a positive influence on phase transitions of SrZrO3 by co-doping with Y2O3 and Yb2O3. The thermal conductivities of SZYY were at least ~30% lower in contrast to that of SrZrO3 and 8YSZ in the whole tested temperature range. Good chemical compatibility was observed for SZYY with 8YSZ or Al2O3 powders after a 24 h heat treatment at 1250 °C. The phase stability and the microstructure evolution of the as-sprayed SZYY coating during annealing at 1400 °C were also investigated.

  15. Broadband near-infrared emission from Tm{sup 3+}/Er{sup 3+} co-doped nanostructured glass ceramics

    SciTech Connect

    Chen Daqin; Wang Yuansheng; Bao Feng; Yu Yunlong

    2007-06-01

    Transparent SiO{sub 2}-Al{sub 2}O{sub 3}-NaF-YF{sub 3} glass ceramics co-doped with Er{sup 3+} and Tm{sup 3+} were prepared by melt quenching and subsequent heating. X-ray diffraction and transmission electron microscopy experiments revealed that {beta}-YF{sub 3} nanocrystals incorporated with Er{sup 3+} and Tm{sup 3+} were precipitated homogeneously among the oxide glass matrix. An integrated broad near-infrared emission band in the wavelength region of 1300-1700 nm, consisting of Tm{sup 3+} emissions around 1472 nm ({sup 3}H{sub 4}{yields}{sup 3}F{sub 4}) and 1626 nm ({sup 3}F{sub 4}{yields}{sup 3}H{sub 6}), and Er{sup 3+} emission around 1543 nm ({sup 4}I{sub 13/2}{yields}{sup 4}I{sub 15/2}), was obtained under 792 nm laser excitation. The full width at half maximum of this integrated band increased with the increasing of [Tm]/[Er] ratio, and it reached as large as 175 nm for the 0.1 mol% Er{sup 3+} and 0.8 mol% Tm{sup 3+} co-doped sample. The energy transfers between Er{sup 3+} and Tm{sup 3+} were proposed to play an important role in tailoring the emission bandwidth of the sample.

  16. Luminescence characteristics of ZnS nanoparticles co-doped with Ni 2+ and Mn 2+

    NASA Astrophysics Data System (ADS)

    Yang, Ping; Lü, Mengkai; Xu, Dong; Yuan, Duorong; Song, Chunfeng; Liu, Suwen; Cheng, Xiufeng

    2003-12-01

    ZnS nanoparticles doped with Ni 2+ and Mn 2+ have been prepared by co-precipitation from homogeneous solutions of Zn, Ni and Mn salt compounds, with S 2- as precipitating anion formed by decomposition of thioacetamide (TAA). X-ray diffraction analysis shows that the average crystalline particle size of the doped and undoped ZnS nanometer scale samples is about 2-4 nm. A novel luminescent property has been observed in the photoluminescence (PL) spectra of the ZnS nanoparticles co-doped with Ni 2+ and Mn 2+. The ZnS nanoparticles can be doped with Ni 2+ and Mn 2+ during synthesis without altering the X-ray diffraction pattern. However, the emission wavelengths (with a color range from blue to green, λem=475-540 nm) and PL intensities of the co-doped samples vary with changing the impurity mole ratios of Ni 2+ and Mn 2+ in the co-doped samples. When the mole ratios of Ni 2+ and Mn 2+ in the co-doped sample are 0.3% and 2.0%, respectively, the relative fluorescence intensity of the co-doped samples is about four times of that of un-doped ZnS nanocrystals. The PL properties of the co-doped samples are dramatically different from those of Ni 2+- and Mn 2+-doped ZnS nanocrystals.

  17. Electrical and optical properties of Co-doped and undoped MoS2

    NASA Astrophysics Data System (ADS)

    Ko, Tsung-Shine; Huang, Cheng-Ching; Lin, Der-Yuh; Ruan, Yan-Jia; Huang, Ying Sheng

    2016-04-01

    Co-doped and undoped layered MoS2 crystals were grown by the chemical vapor transport method using iodine as the transport agent. Both reflectance and piezoreflectance measurements reveal two exciton transitions of the direct band edge around 1.86 and 2.06 eV for undoped MoS2 and 1.84 and 2.03 eV for Co-doped MoS2. Hall effect measurements show that the Co-doped MoS2 sample has a lower carrier concentration and mobility than the undoped sample. These differences between undoped and Co-doped MoS2 were attributed to the effect of cobalt atoms causing a small lattice distortion, lattice imperfections and/or impurity states that form trap states between the conduction band and valence band. Furthermore, photoconductivity (PC) and persistent PC results show that Co-doped MoS2 has a longer time constant and better responsivity than undoped MoS2. This work discusses the advantages of Co-doped MoS2 for photodetector applications.

  18. Bi-layer Al2O3/ZnO atomic layer deposition for controllable conductive coatings on polypropylene nonwoven fiber mats

    NASA Astrophysics Data System (ADS)

    Sweet, William J.; Jur, Jesse S.; Parsons, Gregory N.

    2013-05-01

    Electrically conductive zinc oxide coatings are applied to polypropylene nonwoven fiber mats by atomic layer deposition (ALD) at 50-155 °C. A low temperature (50 °C) aluminum oxide ALD base layer on the polypropylene limits diffusion of diethyl zinc into the polypropylene, resulting in ZnO layers with properties similar to those on planar silicon. Effective conductivity of 63 S/cm is achieved for ZnO on Al2O3 coated polypropylene fibers, and the fibers remain conductive for months after coating. Without the Al2O3 precoating, the effective conductivity was much smaller, consistent with precursor diffusion into the polymer and sub-surface ZnO nucleation. Mechanical robustness tests showed that conductive samples bent around a 6 mm radius maintained up to 40% of the pre-bending conductivity. Linkages between electrical conductivity and mechanical performance will help inform materials choice for flexible and porous electronics including textile-based sensors and antennas.

  19. Al-doped ZnO aligned nanorod arrays for opto-electronic and sensor applications

    NASA Astrophysics Data System (ADS)

    Holloway, T.; Mundle, R.; Dondapati, H.; Konda, R. B.; Bahoura, M.; Pradhan, A. K.

    2012-04-01

    We report on the growth of vertically aligned Al:ZnO nanorod arrays synthesized by the hydrothermal technique at considerably low temperature on a sputtered Al:ZnO seed layer. The morphology demonstrates that the nanorod arrays maintain remarkable alignment along the c-axis over a large area. The optoelectronic properties of nanorod arrays on Al:ZnO/p-Si seed layer with SiO2 have been illustrated. The photocurrent is significantly reduced in nanorod arrays on AZO/SiO2/p-Si heterojunction due to multiple scattering phenomena associated with the nanorod arrays. The optical properties of the AZO film with and without the AZO nanorod arrays were investigated. Also the effects of an intermediate layer in the AZO/P-Si heterojunction structure with and without the AZO nanorod array present were explored. All the various intermediate layers displayed photovoltaic effect behavior, especially with the AZO/SiO2/P-Si heterojunction structure, which exhibited ideal diode behavior. The optoelectronic properties of nanorod arrays on AZO/P-Si seed layer with SiO2 have been illustrated. The photocurrent is significantly reduced in nanorod arrays on AZO/SiO2/P-Si heterojunction due to multiple scattering phenomena associated with the nanorod arrays. The results have tremendous impact for sensor fabrication, including glucose sensor.

  20. Solubility control in dilute magnetic semiconductors by using the co-doping method

    NASA Astrophysics Data System (ADS)

    Sato, Kazunori; Fujii, Hitoshi; Bergqvist, Lars; Dederichs, Peter H.; Katayama-Yoshida, Hiroshi

    2009-03-01

    To overcome low solubility limit of magnetic impurities in dilute magnetic semiconductors (DMS) and realize room temperature ferromagnetism, we propose a co-doping method to increase solubility of magnetic impurities in DMS [1]. We calculate electronic structure of (Ga, Mn)As, (Ga, Mn)N, (Ga, Cr)N and (Zn, Cr)Te with interstitial impurities, such as Li, Na and Cu, from first-principles by using the Korringa-Kohn- Rostoker coherent potential approximation (KKR-CPA) method. From the total energy results, it is shown that the mixing energy of magnetic impurity becomes negative and the solubility of magnetic impurities is strongly enhanced under the existence of interstitials [1]. In general, the co-dopants compensate hole carriers, thus the system becomes paramagnetic. However, owing to the large diffusivity of these interstitial impurities, we can anneal out the co-dopants after the crystal growth to recover the ferromagnetism. As an example, kinetic Monte Carlo simulations for the diffusion of interstitial co-dopants in DMS will be shown. [1] K. Sato et al., Jpn. J. Appl. Phys. 46 L1120 (2007)

  1. Effect of cobalt doping on structural and optical properties of ZnO nanoparticles

    NASA Astrophysics Data System (ADS)

    Singh, J.; Chanda, A.; Gupta, S.; Shukla, P.; Chandra, V.

    2016-05-01

    Cobalt doped ZnO nanoparticles of uniform sizes were prepared by a chemical method using ZnCl2 and NaOH as the source materials. The formation of Co-doped ZnO nanoparticles was confirmed by transmission electron microscopy (TEM), high resolution TEM (HR-TEM) and selected area electron diffraction (SAED) studies. The optical properties of obtained products were examined using room temperature UV-visible and FTIR spectroscopy. SAED of cobalt doped ZnO nanoparticles shows homogeneous distribution of nanoparticles with hexagonal structure. The HRTEM image of the Co-doped ZnO nanoparticles reveals a clear lattice spacing of 0.52 nm corresponding to the interplanar spacing of wurtzite ZnO (002) plane. The absorption band at 857 cm-1 in FTIR spectra confirmed the tetrahedral coordination of Zn and a shift of absorption peak to shorter wavelength region and decrease in absorbance with Co doping.is observed in UV-Visible spectra.

  2. Nonequilibrium-Plasma-Synthesized ZnO Nanocrystals with Plasmon Resonance Tunable via Al Doping and Quantum Confinement.

    PubMed

    Greenberg, Benjamin L; Ganguly, Shreyashi; Held, Jacob T; Kramer, Nicolaas J; Mkhoyan, K Andre; Aydil, Eray S; Kortshagen, Uwe R

    2015-12-01

    Metal oxide semiconductor nanocrystals (NCs) exhibit localized surface plasmon resonances (LSPRs) tunable within the infrared (IR) region of the electromagnetic spectrum by vacancy or impurity doping. Although a variety of these NCs have been produced using colloidal synthesis methods, incorporation and activation of dopants in the liquid phase has often been challenging. Herein, using Al-doped ZnO (AZO) NCs as an example, we demonstrate the potential of nonthermal plasma synthesis as an alternative strategy for the production of doped metal oxide NCs. Exploiting unique, thoroughly nonequilibrium synthesis conditions, we obtain NCs in which dopants are not segregated to the NC surfaces and local doping levels are high near the NC centers. Thus, we achieve overall doping levels as high as 2 × 10(20) cm(-3) in NCs with diameters ranging from 12.6 to 3.6 nm, and for the first time experimentally demonstrate a clear quantum confinement blue shift of the LSPR energy in vacancy- and impurity-doped semiconductor NCs. We propose that doping of central cores and heavy doping of small NCs are achievable via nonthermal plasma synthesis, because chemical potential differences between dopant and host atoms-which hinder dopant incorporation in colloidal synthesis-are irrelevant when NC nucleation and growth proceed via irreversible interactions among highly reactive gas-phase ions and radicals and ligand-free NC surfaces. We explore how the distinctive nucleation and growth kinetics occurring in the plasma influences dopant distribution and activation, defect structure, and impurity phase formation. PMID:26551232

  3. Structural and optical properties of cobalt doped ZnO nanocrystals

    NASA Astrophysics Data System (ADS)

    Li, Meihui; Xu, Jianping; Chen, Ximing; Zhang, Xiaosong; Wu, Yanyu; Li, Ping; Niu, Xiping; Luo, Chengyuan; Li, Lan

    2012-10-01

    Zn1-xCoxO nanocrystals with nominal Co doping concentrations of x = 0-0.1 were synthesized through a simple solution route followed by a calcining process. The doping effects on the structural, morphological and optical properties were investigated by means of X-ray diffraction, scanning electron microscopy, transmission electron microscopy, Raman, absorption and luminescence spectroscopy. The results indicated that a small amount of Co ions were incorporated into ZnO lattice structure, whereas the secondary phase of Co3O4 was segregated and precipitated at high Co doping concentrations, the solid solubility of Co ions in ZnO nanocrystals could be lower than 0.05. The spectra related to transitions within the tetrahedral Co2+ ions in the ZnO host crystal were observed in absorption and luminescence spectra.

  4. Transparent conducting impurity-doped ZnO thin films prepared using oxide targets sintered by millimeter-wave heating

    SciTech Connect

    Minami, Tadatsugu; Okada, Kenji; Miyata, Toshihiro; Nomoto, Juni-chi; Hara, Youhei; Abe, Hiroshi

    2009-07-15

    The preparation of transparent conducting impurity-doped ZnO thin films by both pulsed laser deposition (PLD) and magnetron sputtering deposition (MSD) using impurity-doped ZnO targets sintered with a newly developed energy saving millimeter-wave (28 GHz) heating technique is described. Al-doped ZnO (AZO) and V-co-doped AZO (AZO:V) targets were prepared by sintering with various impurity contents for 30 min at a temperature of approximately 1250 degree sign C in an air or Ar gas atmosphere using the millimeter-wave heating technique. The resulting resistivity and its thickness dependence obtainable in thin films prepared by PLD using millimeter-wave-sintered AZO targets were comparable to those obtained in thin films prepared by PLD using conventional furnace-sintered AZO targets; a low resistivity on the order of 3x10{sup -4} {Omega} cm was obtained in AZO thin films prepared with an Al content [Al/(Al+Zn) atomic ratio] of 3.2 at. % and a thickness of 100 nm. In addition, the resulting resistivity and its spatial distribution on the substrate surface obtainable in thin films prepared by rf-MSD using a millimeter-wave-sintered AZO target were almost the same as those obtained in thin films prepared by rf-MSD using a conventional powder AZO target. Thin films prepared by PLD using millimeter-wave-sintered AZO:V targets exhibited an improved resistivity stability in a high humidity environment. Thin films deposited with a thickness of approximately 100 nm using an AZO:V target codoped with an Al content of 4 at. % and a V content [V/(V+Zn) atomic ratio] of 0.2 at. % were sufficiently stable when long-term tested in air at 90% relative humidity and 60 degree sign C.

  5. Thickness Effect of Al-Doped ZnO Window Layer on Damp-Heat Stability of CuInGaSe2 Solar Cells

    SciTech Connect

    Pern, F. J.; Mansfield, L.; DeHart, C.; Glick, S. H.; Yan, F.; Noufi, R.

    2011-01-01

    We investigated the damp heat (DH) stability of CuInGaSe{sub 2} (CIGS) solar cells as a function of thickness of the Al-doped ZnO (AZO) window layer from the 'standard' 0.12 {micro}m to a modest 0.50 {micro}m over an underlying 0.10-{micro}m intrinsic ZnO buffer layer. The CIGS cells were prepared with external electrical contact using fine Au wire to the tiny 'standard' Ni/Al (0.05 {micro}m/3 {micro}m) metal grid contact pads. Bare cell coupons and sample sets encapsulated in a specially designed, Al-frame test structure with an opening for moisture ingress control using a TPT backsheet were exposed to DH at 85 C and 85% relative humidity, and characterized by current-voltage (I-V), quantum efficiency (QE), and (electrochemical) impedance spectroscopy (ECIS). The results show that bare cells exhibited rapid degradation within 50-100 h, accompanied by film wrinkling and delamination and corrosion of Mo and AlNi grid, regardless of AZO thickness. In contrast, the encapsulated cells did not show film wrinkling, delamination, and Mo corrosion after 168 h DH exposure; but the trend of efficiency degradation rate showed a weak correlation to the AZO thickness.

  6. Thickness Effect of Al-Doped ZnO Window Layer on Damp Heat Stability of CuInGaSe2 Solar Cells: Preprint

    SciTech Connect

    Pern, F. J.; Mansfield, L.; DeHart, C.; Glick, S. H.; Yan, F.; Noufi, R.

    2011-07-01

    We investigated the damp heat (DH) stability of CuInGaSe2 (CIGS) solar cells as a function of thickness of the Al-doped ZnO (AZO) window layer from the 'standard' 0.12 μm to a modest 0.50 μm over an underlying 0.10-μm intrinsic ZnO buffer layer. The CIGS cells were prepared with external electrical contact using fine Au wire to the tiny 'standard' Ni/Al (0.05 μm/3 μm) metal grid contact pads. Bare cell coupons and sample sets encapsulated in a specially designed, Al-frame test structure with an opening for moisture ingress control using a TPT backsheet were exposed to DH at 85oC and 85% relative humidity, and characterized by current-voltage (I-V), quantum efficiency (QE), and (electrochemical) impedance spectroscopy (ECIS). The results show that bare cells exhibited rapid degradation within 50-100 h, accompanied by film wrinkling and delamination and corrosion of Mo and AlNi grid, regardless of AZO thickness. In contrast, the encapsulated cells did not show film wrinkling, delamination, and Mo corrosion after 168 h DH exposure; but the trend of efficiency degradation rate showed a weak correlation to the AZO thickness.

  7. NIR luminescence studies on Er3+:Yb3+ co-doped sodium telluroborate glasses for lasers and optical amplifer applications

    NASA Astrophysics Data System (ADS)

    Annapoorani, K.; Murthy, N. Suriya; Marimuthu, K.

    2016-05-01

    Er3+:Yb3+ co-doped Sodium telluroborate glasses were prepared with the chemical composition (49.5-x)B2O3+25TeO2+5Li2CO3+10ZnO+10NaF+0.5Er2O3+xYb2O3 (where x= 0.1, 0.5, 1.0 and 2.0 in mol %) following the melt quenching technique. With the addition of Yb3+ ions into Er3+ ions in the prepared glasses, the absorption cross-section values were found to increase due to the effective energy transfer from 2F5/2 level of Yb3+ ions to the 4I11/2 level of Er3+ ions. The fluorescence around 1550 nm correspond to the 4I13/2→4I15/2 transition was observed under 980 nm pumping. Among the present glasses, integrated intensity was found to be higher for 1.0 mol% Yb3+ ion glass. The parameters such as stimulated emission cross- section, Gain bandwidth and quantum efficiency of the 4I13/2→4I15/2 transition was found to be higher for the NTBE1.0Y glass and the same is suggested for potential NIR lasers and optical amplifier applications.

  8. Structural and magnetic properties of Ni/Mn codoped ZnO nanoparticles

    NASA Astrophysics Data System (ADS)

    Vijayaprasath, G.; Murugan, R.; Asaithambi, S.; Sakthivel, P.; Mahalingam, T.; Ravi, G.

    2016-05-01

    We report systematic studies of the magnetic properties of Ni and Mn co-doped ZnO nanoparticles prepared by co-precipitation method. Structural characterization reveals that Ni and Mn ions substituted into ZnO lattices without any secondary phases formation. Photoluminescence and Raman spectra shows that the Ni/Mn were doped into the ZnO lattice resulting slight shift in near-band-edge emission. Moreover, the novel Raman peak at 586 cm-1 indicates two kinds of cations via doping that could affect the local polarizability. Magnetic measurements of the nanoparticles exhibits ferromagnetic behavior at room-temperature.

  9. Co-doping of CVD diamond with boron and sulfur

    NASA Astrophysics Data System (ADS)

    Eaton, Sally Catherine

    Boron is well-established as a p-type dopant in diamond, but attempts to find a viable n-type dopant remain unsuccessful. In 1999, sulfur was reported to give n-type conductivity. However, later measurements indicated that the samples contained boron and were p-type. Recently, we showed that diamond co-doped with sulfur and small quantities of boron shows n-type conductivity, which was established by Mott-Schottky analyses, thermoelectric effect, Hall measurements, scanning tunneling spectroscopy (STS), and UV open-circuit photo-potential. At higher boron concentrations, a transition to p-type behavior is observed due to overcompensation. Experiments performed without boron in the feed gas or without residual boron in the reactor chamber showed no sulfur incorporation and no change in conductivity. There is evidence that the excess sulfur concentration in the near-surface region is not stable. At room temperature and below, the activation energies range from 0.06 to 0.12 eV. Above 400K there is an irreversible loss in conductivity and the activation energy increases to approximately 1.3 eV. Additionally, we observed by SIMS that there exists a concentration gradient in sulfur with film depth. This sulfur concentration gradient is also observed in our electrical measurements. STS shows a decrease in conductivity with film depth and Hall effect measurements show both p-type and n-type coefficients for samples which are n-type in the near-surface region. The flat-band potential obtained from the Mott-Schottky experiments is only 1 to 1.5 V more negative on the electrochemical scale than that for boron-doped diamond. This implies that the Fermi level is only 1 to 1.5 eV higher than the Fermi level in boron-doped diamond. This observation implies that the n-type conductivity is not by excitation of electrons to the conduction band, but by an alternate mechanism that occurs in the middle of the band gap. One such possibility is an acceptor impurity band. Electrons from

  10. Electronic structure of Al-doped ZnO transparent conductive thin films studied by x-ray absorption and emission spectroscopies

    SciTech Connect

    Huang, W. H.; Sun, S. J.; Chiou, J. W.; Chou, H.; Chan, T. S.; Lin, H.-J.; Kumar, Krishna; Guo, J.-H.

    2011-11-15

    This study used O K-, Zn L{sub 3}-, Zn K-, and Al K-edges x-ray absorption near-edge structure (XANES) and O K-edge x-ray emission spectroscopy (XES) measurements to investigate the electronic structure of transparent Al-doped ZnO (AZO) thin film conductors. The samples were prepared on glass substrates at a low temperature near 77 K by using a standard RF sputtering method. High-purity Ne (5N) was used as the sputtering gas. The crystallography of AZO thin films gradually transformed from the ZnO wurtize structure to an amorphous structure during sample deposition, which suggests the suitability to grow on flexible substrates, eliminating the severe degradation due to fragmentation by repeated bending. The O K- and Zn L{sub 3}-edges XANES spectra of AZO thin films revealed a decrease in the number of both O 2p and Zn 3d unoccupied states when the pressure of Ne was increased from 5 to 100 mTorr. In contrast, Al K-edges XANES spectra showed that the number of unoccupied states of Al 3p increased in conjunction with the pressure of Ne, indicating an electron transfer from Al to O atoms, and suggesting that Al doping increases the negative effective charge of oxygen ions. XES and XANES spectra of O 2p states at the O K-edge also revealed that Al doping not only raised the conduction-band-minimum, but also increased the valence-band-maximum and the band-gap. The results indicate that the reduction in conductivity of AZO thin films is due to the generation of ionic characters, the increase in band-gap, and the decrease in density of unoccupied states of oxygen.

  11. Amplified spontaneous emission from ZnO in n-ZnO/ZnO nanodots-SiO(2) composite/p-AlGaN heterojunction light-emitting diodes.

    PubMed

    Shih, Ying Tsang; Wu, Mong Kai; Li, Wei Chih; Kuan, Hon; Yang, Jer Ren; Shiojiri, Makoto; Chen, Miin Jang

    2009-04-22

    This study demonstrates amplified spontaneous emission (ASE) of the ultraviolet (UV) electroluminescence (EL) from ZnO at lambda~380 nm in the n-ZnO/ZnO nanodots-SiO(2) composite/p- Al(0.12)Ga(0.88)N heterojunction light-emitting diode. A SiO(2) layer embedded with ZnO nanodots was prepared on the p-type Al(0.12)Ga(0.88)N using spin-on coating of SiO(2) nanoparticles followed by atomic layer deposition (ALD) of ZnO. An n-type Al-doped ZnO layer was deposited upon the ZnO nanodots-SiO(2) composite layer also by the ALD technique. High-resolution transmission electron microscopy (HRTEM) reveals that the ZnO nanodots embedded in the SiO(2) matrix have diameters of 3-8 nm and the wurtzite crystal structure, which allows the transport of carriers through the thick ZnO nanodots-SiO(2) composite layer. The high quality of the n-ZnO layer was manifested by the well crystallized lattice image in the HRTEM picture and the low-threshold optically pumped stimulated emission. The low refractive index of the ZnO nanodots-SiO(2) composite layer results in the increase in the light extraction efficiency from n-ZnO and the internal optical feedback of UV EL into n-ZnO layer. Consequently, significant enhancement of the UV EL intensity and super-linear increase in the EL intensity, as well as the spectral narrowing, with injection current were observed owing to ASE in the n-ZnO layer. PMID:19420563

  12. Structural, optical, magnetic and photocatalytic properties of Co doped CuS diluted magnetic semiconductor nanoparticles

    NASA Astrophysics Data System (ADS)

    Sreelekha, N.; Subramanyam, K.; Amaranatha Reddy, D.; Murali, G.; Ramu, S.; Rahul Varma, K.; Vijayalakshmi, R. P.

    2016-08-01

    Pristine and Co doped covellite CuS nanoparticles were synthesized in aqueous solution by facile chemical co-precipitation method with Ethylene Diamine Tetra Acetic Acid (EDTA) as a stabilizing agent. EDAX measurements confirmed the presence of Co in the CuS host lattice. Hexagonal crystal structure of pure and Co doped CuS nanoparticles were authenticated by XRD patterns. TEM images indicated that sphere-shape of nanoparticles through a size ranging from 5 to 8 nm. The optical absorption edge moved to higher energies with increase in Co concentration as indicated by UV-vis spectroscopy. Magnetic measurements revealed that bare CuS sample show sign of diamagnetic character where as in Co doped nanoparticles augmentation of room temperature ferromagnetism was observed with increasing doping precursor concentrations. Photocatalytic performance of the pure and Co doped CuS nanoparticles were assessed by evaluating the degradation rate of rhodamine B solution under sun light irradiation. The 5% Co doped CuS nanoparticles provide evidence for high-quality photocatalytic activity.

  13. Band gap tuning and room temperature ferromagnetism in Co doped Zinc stannate nanostructures

    NASA Astrophysics Data System (ADS)

    Sumithra, S.; Victor Jaya, N.

    2016-07-01

    The effect of Co doping on structural, optical and magnetic behavior of pure and Co doped Zinc stannate (ZTO) nanostructures was investigated. Pure and Co (1%, 3% & 5%) doped Zn2SnO4 compounds were prepared through simple precipitation route. Formation of cubic inverse spinel structure and metal oxide vibrations of the samples were investigated using XRD and FTIR. Co doping influences the crystallite size producing micro strain in ZTO lattice. Poly dispersed rod like shape of the particles was examined by FESEM. Elemental composition of prepared samples was identified by EDAX analysis. Optical Absorption spectra shows significant red shift on increasing the dopant concentration which indicates the reduction in optical band gap. Visible luminescence observed from photoluminescence studies confirms the presence of oxygen vacancies and trap sites in the lattice. Magnetization analysis reveals the enhanced ferromagnetic behavior in all Co doped ZTO samples. The amplified ferromagnetic ordering in Co doped ZTO compounds has been explained in terms of defects serving as free spin polarized prophetic carriers.

  14. An excellent enzymatic lactic acid biosensor with ZnO nanowires-gated AlGaAs/GaAs high electron mobility transistor.

    PubMed

    Ma, Siwei; Liao, Qingliang; Liu, Hanshuo; Song, Yu; Li, Ping; Huang, Yunhua; Zhang, Yue

    2012-10-21

    An excellent biosensor with ZnO nanowires-gated AlGaAs/GaAs high electron mobility transistor (HEMT) was used to detect lactic acid. Due to the new structure, addition of the Si-doped GaAs cap layer, the HEMT biosensor could detect a wide range of lactic acid concentrations from 0.03 nM to 300 mM. The novel biosensor exhibiting good performance along with fast response, high sensitivity, wide detection range, and long-term stability, can be integrated with a commercially available transmitter to realize lactic acid detection. PMID:22951602

  15. Field-induced doping-mediated tunability in work function of Al-doped ZnO: Kelvin probe force microscopy and first-principle theory

    NASA Astrophysics Data System (ADS)

    Kumar, Mohit; Mookerjee, Sumit; Som, Tapobrata

    2016-09-01

    We demonstrate that the work function of Al-doped ZnO (AZO) can be tuned externally by applying an electric field. Our experimental investigations using Kelvin probe force microscopy show that by applying a positive or negative tip bias, the work function of AZO film can be enhanced or reduced, which corroborates well with the observed charge transport using conductive atomic force microscopy. These findings are further confirmed by calculations based on first-principles theory. Tuning the work function of AZO by applying an external electric field is not only important to control the charge transport across it, but also to design an Ohmic contact for advanced functional devices.

  16. Improved optical and electrical properties of rf sputtered Al doped ZnO films on polymer substrates by low-damage processes

    SciTech Connect

    Min, Hyung Seob; Yang, Min Kyu; Lee, Jeon-Kook

    2009-03-15

    Three types of low-damage radio-frequency (rf) magnetron sputtering processes--an interruptive process, a rotating cylindrical holder method, and an off-axis sputtering method--were designed and studied to reduce the film surface temperature during deposition. Low-damage sputtering processes were investigated to improve the resistivity and optical transmittance in the visible range of Al doped ZnO (AZO) thin films deposited on polymer substrates. In the case of the polyethersulfone substrate, AZO films with a resistivity of 1.0x10{sup -3} {omega} cm and an optical transmittance of 75% were obtained by the rotating repeat holder method during rf sputtering.

  17. Atomic layer deposition of Al-doped ZnO films using ozone as the oxygen source: A comparison of two methods to deliver aluminum

    SciTech Connect

    Yuan Hai; Luo Bing; Yu Dan; Cheng, An-jen; Campbell, Stephen A.; Gladfelter, Wayne L.

    2012-01-15

    Aluminum-doped ZnO films were prepared by atomic layer deposition at 250 deg. C using diethylzinc (DEZ), trimethylaluminum (TMA), and ozone as the precursors. Two deposition methods were compared to assess their impact on the composition, structural, electrical, and optical properties as a function of Al concentration. The first method controlled the Al concentration by changing the relative number of Al to Zn deposition cycles; a process reported in the literature where water was used as the oxygen source. The second method involved coinjection of the DEZ and TMA during each cycle where the partial pressures of the precursors control the aluminum concentration. Depth profiles of the film composition using Auger electron spectroscopy confirmed a layered microstructure for the films prepared by the first method, whereas the second method led to a homogeneous distribution of the aluminum throughout the ZnO film. Beneath the surface layer the carbon concentrations for all of the films were below the detection limit. Comparison of their electrical and optical properties established that films deposited by coinjection of the precursors were superior.

  18. Highly Repeatable and Recoverable Phototransistors Based on Multifunctional Channels of Photoactive CdS, Fast Charge Transporting ZnO, and Chemically Durable Al2O3 Layers.

    PubMed

    Ahn, Cheol Hyoun; Kang, Won Jun; Kim, Ye Kyun; Yun, Myeong Gu; Cho, Hyung Koun

    2016-06-22

    Highly repeatable and recoverable phototransistors were explored using a "multifunctional channels" structure with multistacked chalcogenide and oxide semiconductors. These devices were made of (i) photoactive CdS (with a visible band gap), (ii) fast charge transporting ZnO (with a high field-effect mobility), and (iii) a protection layer of Al2O3 (with high chemical durability). The CdS TFT without the Al2O3 protection layer did not show a transfer curve due to the chemical damage that occurred on the ZnO layer during the chemical bath deposition (CBD) process used for CdS deposition. Alternatively, compared to CdS phototransistors with long recovery time and high hysteresis (ΔVth = 19.5 V), our "multi-functional channels" phototransistors showed an extremely low hysteresis loop (ΔVth = 0.5V) and superior photosensitivity with repeatable high photoresponsivity (52.9 A/W at 400 nm). These improvements are likely caused by the physical isolation of the sensing region and charge transport region by the insertion of the ultrathin Al2O3 layer. This approach successfully addresses some of the existing problems in CdS phototransistors, such as the high gate-interface trap site density and high absorption of molecular oxygen, which originate from the polycrystalline CdS. PMID:27259048

  19. Magnetic and ferroelectric properties of Zn and Mn co-doped BaTiO3

    NASA Astrophysics Data System (ADS)

    Keshari Das, Sangram; Kumar Roul, Binod

    2015-06-01

    This paper reports an approach to obtaining multiferroic properties in co-doped (Zn:Mn) BaTiO3 near room temperature. Interestingly, an unusual magnetic hysteresis loop is observed in the co-doped compositions in which the central portion of the loop is squeezed. However, in the composition Ba0.9Zn0.1Ti0.9Mn0.1O3, a broad magnetic hysteresis loop is observed. Such a magnetic effect is attributed to the coexistence of antiferromagnetic and ferromagnetic exchange interactions in the system. The observation of the above type of magnetic properties is likely to be due to the presence of exchange interactions between Mn ions. A lossy-type of ferroelectric hysteresis loop is also observed in co-doped ceramic compositions near room temperature. Author S. K. Das supported financially by CSIR, New Delhi (Grant No. 09/750 (0005)/2009-EMR-I).

  20. Comparison of interfacial and electrical properties between Al2O3 and ZnO as interface passivation layer of GaAs MOS device with HfTiO gate dielectric

    NASA Astrophysics Data System (ADS)

    Shuyan, Zhu; Jingping, Xu; Lisheng, Wang; Yuan, Huang; Wing Man, Tang

    2015-03-01

    GaAs metal-oxide-semiconductor (MOS) capacitors with HfTiO as the gate dielectric and Al2O3 or ZnO as the interface passivation layer (IPL) are fabricated. X-ray photoelectron spectroscopy reveals that the Al2O3 IPL is more effective in suppressing the formation of native oxides and As diffusion than the ZnO IPL. Consequently, experimental results show that the device with Al2O3 IPL exhibits better interfacial and electrical properties than the device with ZnO IPL: lower interface-state density (7.2 × 1012 eV-1 cm-2), lower leakage current density (3.60 × 10-7 A/cm2 at Vg = 1 V) and good C-V behavior. Project supported by the National Natural Science Foundation of China (Nos. 61176100, 61274112).

  1. Nitrogen-fluorine co-doped titania inverse opals for enhanced solar light driven photocatalysis.

    PubMed

    Rahul, T K; Sandhyarani, N

    2015-11-21

    Three dimensionally ordered nitrogen-fluorine (N-F) co-doped TiO2 inverse opals (IOs) were fabricated by templating with polystyrene (PS) colloidal photonic crystals (CPCs) by infiltration. During preparation, the TiO2 precursor was treated with a mixture of nitric acid and trifluoroacetic acid to facilitate N-F co-doping into the TiO2 lattice. Enhanced solar light absorption was observed in the samples as a consequence of the red shift in the electronic band gap of TiO2 due to N-F co-doping. The photonic band gap (PBG) of these TiO2 IO films was tuned by varying the sphere size of the PS CPC templates. The as-prepared N-F co-doped TiO2 IO films were used as photocatalysts for the degradation of Rhodamine B (RhB) dye under solar light irradiation. A significant enhancement in the photocatalytic activity was observed in N-F co-doped TiO2 IO films prepared using PS spheres of 215 nm as a template, with the red edge of the PBG closer to the electronic band gap (EBG) of TiO2. 100% of the dye molecules were degraded within 2 minutes under direct solar irradiation, which is one of the fastest reaction times ever reported for RhB degradation in the presence of TiO2 photocatalysts. The N-F co-doped TiO2 IO film prepared using PS of 460 nm with its PBG centered at 695 nm also showed good photocatalytic activity. It was found that the IO films displayed improved photocatalytic activity in comparison to ordinary nanocrystalline (nc)-TiO2 films. The enhancement could be attributed to the bandgap scattering effect and the slow photon effect, leading to a significant improvement in solar light harvesting. PMID:26487369

  2. Nitrogen-fluorine co-doped titania inverse opals for enhanced solar light driven photocatalysis

    NASA Astrophysics Data System (ADS)

    Rahul, T. K.; Sandhyarani, N.

    2015-10-01

    Three dimensionally ordered nitrogen-fluorine (N-F) co-doped TiO2 inverse opals (IOs) were fabricated by templating with polystyrene (PS) colloidal photonic crystals (CPCs) by infiltration. During preparation, the TiO2 precursor was treated with a mixture of nitric acid and trifluoroacetic acid to facilitate N-F co-doping into the TiO2 lattice. Enhanced solar light absorption was observed in the samples as a consequence of the red shift in the electronic band gap of TiO2 due to N-F co-doping. The photonic band gap (PBG) of these TiO2 IO films was tuned by varying the sphere size of the PS CPC templates. The as-prepared N-F co-doped TiO2 IO films were used as photocatalysts for the degradation of Rhodamine B (RhB) dye under solar light irradiation. A significant enhancement in the photocatalytic activity was observed in N-F co-doped TiO2 IO films prepared using PS spheres of 215 nm as a template, with the red edge of the PBG closer to the electronic band gap (EBG) of TiO2. 100% of the dye molecules were degraded within 2 minutes under direct solar irradiation, which is one of the fastest reaction times ever reported for RhB degradation in the presence of TiO2 photocatalysts. The N-F co-doped TiO2 IO film prepared using PS of 460 nm with its PBG centered at 695 nm also showed good photocatalytic activity. It was found that the IO films displayed improved photocatalytic activity in comparison to ordinary nanocrystalline (nc)-TiO2 films. The enhancement could be attributed to the bandgap scattering effect and the slow photon effect, leading to a significant improvement in solar light harvesting.

  3. Suppression of boron-oxygen defects in Czochralski silicon by carbon co-doping

    SciTech Connect

    Wu, Yichao; Yu, Xuegong He, Hang; Chen, Peng; Yang, Deren

    2015-03-09

    We have investigated the influence of carbon co-doping on the formation of boron-oxygen defects in Czochralski silicon. It is found that carbon can effectively suppress the formation of boron-oxygen defects. Based on our experiments and first-principle theoretical calculations, it is believed that this effect is attributed to the formation of more energetically favorable carbon-oxygen complexes. Moreover, the diffusion of oxygen dimers in carbon co-doped silicon also becomes more difficult. All these phenomena should be associated with the tensile stress field induced by carbon doping in silicon.

  4. Thickness effect on the optical and morphological properties in Al2O3/ZnO nanolaminate thin films prepared by atomic layer deposition

    NASA Astrophysics Data System (ADS)

    López, J.; Martínez, J.; Abundiz, N.; Domínguez, D.; Murillo, E.; Castillón, F. F.; Machorro, R.; Farías, M. H.; Tiznado, H.

    2016-02-01

    In this work, we studied the optical and morphological properties of ultrathin nanolaminate films based on Al2O3/ZnO (AZ) bilayers stack. The films were deposited on Si (100) by means of thermal atomic layer deposition (ALD) technique. The bilayer thicknesses (ratio = 1:1) were 0.2, 1, 2, 4, 10 and 20 nm. Refractive index (n) and band gap (Eg) of each nanolaminate were studied via spectroscopic ellipsometry (SE), and spectral reflectance ultraviolet-visible spectroscopy (UV-vis). Surface morphology and roughness parameters of the nanolaminates were measured by Atomic Force Microscopy (AFM). The optical and morphological properties were shown highly dependent on the bilayer thickness. Ellipsometric data treated through the Cody-Lorentz optical model revealed that the refractive index decreases for thinner bilayers. A sharp intensity decay of refractive index and peaks at the UV region (200-400 nm) indicated increased transparency for thinner bilayers. It is also shown that the band gap is tunable. The maximum band gap value was 4.8 eV. These results reveal that ZnO combined with Al2O3 as bilayers stack can be converted into a dielectric material with enhanced band gap, opening the possibility for new optical and dielectric applications.

  5. Quadrupole mass spectrometry and time-of-flight analysis of ions resulting from 532 nm pulsed laser ablation of Ni, Al, and ZnO targets

    SciTech Connect

    Sage, Rebecca S.; Cappel, Ute B.; Ashfold, Michael N. R.; Walker, Nicholas R.

    2008-05-01

    This work describes the design and validation of an instrument to measure the kinetic energies of ions ejected by the pulsed laser ablation (PLA) of a solid target. Mass spectra show that the PLA of Ni, Al, and ZnO targets, in vacuum, using the second harmonic of a Nd:YAG laser (532 nm, pulse duration {approx}10 ns) generates abundant X{sup n+} ions (n{<=}3 for Ni, {<=}2 for Al, {<=}3 and {<=}2 for Zn and O respectively from ZnO). Ions are selected by their mass/charge (m/z) ratio prior to the determination of their times of flight. PLA of Ni has been studied in most detail. The mean velocities of ablated Ni{sup n+} ions are shown to follow the trend v(Ni{sup 3+})>v(Ni{sup 2+})>v(Ni{sup +}). Data from Ni{sup 2+} and Ni{sup 3+} are fitted to shifted Maxwellian functions and agree well with a model which assumes both thermal and Coulombic contributions to ion velocities. The dependence of ion velocities on laser pulse energy (and fluence) is investigated, and the high energy data are shown to be consistent with an effective accelerating voltage of {approx}90 V within the plume. The distribution of velocities associated with Ni{sup 3+} indicates a population at cooler temperature than Ni{sup 2+}.

  6. Structural, electrical and optical properties of Al-Ti codoped ZnO (ZATO) thin films prepared by RF magnetron sputtering

    NASA Astrophysics Data System (ADS)

    Jiang, Minhong; Liu, Xinyu

    2008-12-01

    Al-Ti codoped ZnO (ZATO) thin films were grown on glass substrates at room temperature by radio frequency (RF) magnetron sputtering technique and annealed under vacuum (˜10 -1 Pa) at 400 °C for 3 h. The X-ray diffraction (XRD) patterns show that Al-doped ZnO (ZAO) and ZATO thin films are highly textured along the c-axis and perpendicular to the surface of the substrate. After annealing in a vacuum condition at 400 °C for 3 h, the lowest resistivity of 7.96 and 8.7 × 10 -4 Ω cm are observed for ZATO and ZAO films, respectively. But after annealing in air, the resistivity of ZATO and ZAO is higher than 10 5 Ω cm. In the visible region, the ZAO films show the average transmittance of the order of 90%, while ZATO films were of the order of 75%, which illustrates that the additional Ti doping reduces the optical properties. The optical band gap was found to be 3.46 eV for ZAO film and it increases to 3.53 eV for ZATO films.

  7. Comparative study of pure and Co-doped BaFe2As2

    NASA Astrophysics Data System (ADS)

    Soullard, Jacques; Perez-Enriquez, Raul; Kaplan, Ilya G.

    2015-05-01

    We present a comparative calculation of the electronic structure of the high critical temperature superconductor Co-doped BaFe2As2 and its parent compound at the electron correlation level by the embedded cluster method; the electron correlation is calculated through the second-order Møller-Plesset perturbation theory. The superconducting doped material is represented by the Ba4CoFe4As8 cluster. The analysis of the orbital populations in this cluster reveals the formation of an antiferromagnetic order in the Fe plane with a spin-density increase on the central Co atom with respect to the spin density of the central Fe atom of the undoped case. This increase is associated with an increase of the dz2 orbital population of the central atom. However, the formation mechanism of the local magnetic moment implies also a spin transfer from the nearest-neighbor Fe atoms and from the next-nearest-neighbor As atoms to the central Co atom, and it corresponds to a J1-J2 antiferromagnetic Heisenberg model. Some particular features of dy z and dx2-y2 orbitals in the triplet and in the singlet cluster states are interpreted to correspond to a spinless fermion. This result, as well as the result relative to the formation mechanism of the magnetic moments, can be connected with a model of resonating-valence-bond (RVB) superconductors suggested recently by Poilblanc et al. [Phys. Rev. B 89, 241106 (2014), 10.1103/PhysRevB.89.241106] and based on the Anderson RVB theory.

  8. Investigations on the roles of position controlled Al layers incorporated into an Al-doped ZnO active channel during atomic layer deposition for thin film transistor applications

    NASA Astrophysics Data System (ADS)

    Kim, Eom-Ji; Lee, Won-Ho; Yoon, Sung-Min

    2016-03-01

    We investigated the effects of the distance between incorporated Al layers on the characteristics of thin-film transistors (TFTs) using Al-doped ZnO (AZO) as the active channels. The intervals between the Al layers were controlled by designing the sequences of Al cycles during the atomic-layer deposition. Two configurations were designed as “scatter” or “focus”, in which the incorporated Al layers were dispersed to bottom and top sides or concentrated on the center region. Electrical conductivities of “scatter” and “focus” films were observed to be different. While the dispersed Al layers could work as dopants, a too-close interval between the Al layers suppressed carrier transport, even with the same incorporated Al amounts. These differences were reflected on the device characteristics. The TFT performance of the “scatter” device was better than that of the “focus” device. Consequently, adequately dispersed Al layers in the AZO channel are very important for improving device performance.

  9. Effect of ZnO channel thickness on the device behaviour of nonvolatile memory thin film transistors with double-layered gate insulators of Al2O3 and ferroelectric polymer

    NASA Astrophysics Data System (ADS)

    Yoon, Sung-Min; Yang, Shin-Hyuk; Park, Sang-Hee Ko; Jung, Soon-Won; Cho, Doo-Hee; Byun, Chun-Won; Kang, Seung-Youl; Hwang, Chi-Sun; Yu, Byoung-Gon

    2009-12-01

    Poly(vinylidene fluoride trifluoroethylene) and ZnO were employed for nonvolatile memory thin film transistors as ferroelectric gate insulator and oxide semiconducting channel layers, respectively. It was proposed that the thickness of the ZnO layer be carefully controlled for realizing the lower programming voltage, because the serially connected capacitor by the formation of a fully depleted ZnO channel had a critical effect on the off programming voltage. The fabricated memory transistor with Al/P(VDF-TrFE) (80 nm)/Al2O3 (4 nm)/ZnO (5 nm) exhibits encouraging behaviour such as a memory window of 3.8 V at the gate voltage of -10 to 12 V, and 107 on/off ratio, and a gate leakage current of 10-11 A.

  10. Co-doped mesoporous titania photocatalysts prepared from a peroxo-titanium complex solution

    SciTech Connect

    El Saliby, Ibrahim; Erdei, Laszlo; McDonagh, Andrew; Kim, Jong-Beom; Kim, Jong-Ho; Shon, Ho Kyong

    2014-01-01

    Graphical abstract: - Highlights: • Peroxotitanium complex for the synthesis of doped photocatalysts. • Fabrication of N doped and N/Ag co-doped photocatalysts. • Characterization of photocatalysts by SEM, XRD, BET, DRS and XPS. • Bench scale photocatalysis under simulated solar light using crystal violet pollutant. - Abstract: In this study, nitrogen doped and nitrogen/silver co-doped TiO{sub 2} photocatalsysts were fabricated using a sol–gel method at room temperature. The obtained gels were neutralized, washed with pure water, and calcined at 400 °C for 4 h. The photocatalysts were characterized by scanning and transmission electron microscopy, X-ray diffraction, diffuse reflectance spectroscopy, X-ray photoelectron spectroscopy, and BET specific surface area. The results showed that spherical particles with anatase structure were produced after annealing at 400 °C. N 1s (400 eV) and Ag 3d (367.3 eV) states indicated that nitrogen doping and silver co-doping were in the form of NO bonds and AgO, respectively. The photocatalytic activity of photocatalysts was investigated using a batch reactor system exposed to artificial solar irradiation. Both nitrogen and silver/nitrogen co-doped materials were effective in the photocatalytic degradation of hexamethyl pararosaniline chloride.

  11. Sulfur and Nitrogen Co-Doped Graphene for Metal-Free Catalytic Oxidation Reactions.

    PubMed

    Duan, Xiaoguang; O'Donnell, Kane; Sun, Hongqi; Wang, Yuxian; Wang, Shaobin

    2015-07-01

    Sulfur and nitrogen co-doped reduced graphene oxide (rGO) is synthesized by a facile method and demonstrated remarkably enhanced activities in metal-free activation of peroxymonosulfate (PMS) for catalytic oxidation of phenol. Based on first-order kinetic model, S-N co-doped rGO (SNG) presents an apparent reaction rate constant of 0.043 ± 0.002 min(-1) , which is 86.6, 22.8, 19.7, and 4.5-fold as high as that over graphene oxide (GO), rGO, S-doped rGO (S-rGO), and N-doped rGO (N-rGO), respectively. A variety of characterization techniques and density functional theory calculations are employed to investigate the synergistic effect of sulfur and nitrogen co-doping. Co-doping of rGO at an optimal sulfur loading can effectively break the inertness of carbon systems, activate the sp(2) -hybridized carbon lattice and facilitate the electron transfer from covalent graphene sheets for PMS activation. Moreover, both electron paramagnetic resonance (EPR) spectroscopy and classical quenching tests are employed to investigate the generation and evolution of reactive radicals on the SNG sample for phenol catalytic oxidation. This study presents a novel metal-free catalyst for green remediation of organic pollutants in water. PMID:25786381

  12. Yb-Er co-doped phosphate fiber with hexagonal inner cladding

    NASA Astrophysics Data System (ADS)

    Wen, Lei; Wang, Longfei; He, Dongbing; Chen, Danping; Hu, Lili

    2016-04-01

    An Yb-Er co-doped phosphate glass double-clad fiber with hexagonal inner cladding was fabricated by stack-and-draw method. Output power of 4.9 W was extracted with slope efficiency of 30 % from the fiber with 55 cm in length.

  13. Magnetic field dependence of magnetic domains in Co doped Mn2Sb using magnetic force microscopy

    NASA Astrophysics Data System (ADS)

    Singh, Vikram; Saha, Pampi; Kushwaha, Pallavi; Thamizhavel, A.; Rawat, Rajeev

    2016-05-01

    Magnetic domains in the ferrimagnetic state of Co doped Mn2Sb single crystal has been visualized using Magnetic Force Microscopy. It shows fractal like domain structure. With the application of magnetic field, single domain state is achieved around 2000 Oe. The MFM images collected during field increasing and decreasing cycles show different morphology for same field value.

  14. White-light emitting Eu3+ co-doped ZnO/Zn2SiO4:Mn2+ composite microphosphor

    NASA Astrophysics Data System (ADS)

    Ramakrishna, P. V.; Murthy, D. B. R. K.; Sastry, D. L.

    Eu3+ co-doped ZnO/Zn2SiO4:Mn2+ composites were synthesized via conventional solid state reaction route and were characterized by X-ray diffraction (XRD) scanning electron microscopy (SEM) and Fourier transform infra-red (FTIR) techniques. XRD studies reveal the presence of both ZnO and Zn2SiO4 phases. Photoluminescence properties of the samples were studied using 266 Nd-YAG laser excitations. Emission bands observed at ˜400 nm are ascribed to ZnO phosphor. The green emission bands at 530 nm is associated with the presence of Mn2+ ion, while orange (˜583) and red (615 nm) bands are supposed to be due to the presence of Eu3+ doped Zn2SiO4 phosphor. Energy transfer from power dependence of the sample for electric dipole transition (615 nm) was studied under 532 nm excitation by varying the power from 0.1 to 4.5 W. The estimated colour correlated temperature (CCT) values are found to be ˜4875 and 4458 K under 266 nm and 532 nm laser (0.5 W) excitations. These values are close to those of tubular fluorescent or cool white/daylight compact fluorescent (CFL) (˜5000 K) lamps. The present composite phosphor may have potential application in display devices.

  15. The microstructure of erbium-ytterbium co-doped oxyfluoride glass-ceramic optical fibers

    NASA Astrophysics Data System (ADS)

    Augustyn, Elżbieta; Żelechower, Michał; Stróż, Danuta; Chrapoński, Jacek

    2012-04-01

    Oxyfluoride transparent glass-ceramics combine some features of glasses (easier shaping or lower than single crystals cost of fabrication) and some advantages of rare-earth doped single crystals (narrow absorption/emission lines and longer lifetimes of luminescent levels). Since the material seems to be promising candidate for efficient fiber amplifiers, the manufacturing as well as structural and optical examination of the oxyfluoride glass-ceramic fibers doped with rare-earth ions seems to be a serious challenge. In the first stage oxyfluoride glasses of the following compositions 48SiO2-11Al2O3-7Na2CO3-10CaO-10PbO-11PbF2-3ErF3 and 48SiO2-11Al2O3-7Na2CO3-10CaO-10PbO-10PbF2-3YbF3-1ErF3 (in molar%) were fabricated from high purity commercial chemicals (Sigma-Aldrich). The fabricated glass preforms were drawn into glass fibers using the mini-tower. Finally, the transparent Er3+ doped and Er3+/Yb3+ co-doped oxyfluoride glass-ceramic fibers were obtained by controlled heat treatment of glass fibers. The preceding differential thermal analysis (DTA) studies allowed estimating both the fiber drawing temperature and the controlled crystallization temperature of glass fibers. X-ray diffraction examination (XRD) at each stage of the glass-ceramic fibers fabrication confirmed the undesirable crystallization of preforms and glass fibers has been avoided. The fibers shown their mixed amorphous-crystalline microstructure with nano-crystals of size even below 10 nm distributed in the glassy host. The crystal structure of the grown nano-crystals has been determined by XRD and confirmed by electron diffraction (SAED). Results obtained by both techniques seem to be compatible: Er3FO10Si3 (monoclinic; ICSD 92512), Pb5Al3F19 (triclinic; ICSD 91325) and Er4F2O11Si3 (triclinic; ICSD 51510) against to initially expected PbF2 crystals.

  16. Microstructure and dielectric properties of (Nb + In) co-doped rutile TiO2 ceramics

    NASA Astrophysics Data System (ADS)

    Li, Jinglei; Li, Fei; Zhuang, Yongyong; Jin, Li; Wang, Linghang; Wei, Xiaoyong; Xu, Zhuo; Zhang, Shujun

    2014-08-01

    The (Nb + In) co-doped TiO2 ceramics recently attracted considerable attention due to their colossal dielectric permittivity (CP) (˜100,000) and low dielectric loss (˜0.05). In this research, the 0.5 mol. % In-only, 0.5 mol. % Nb-only, and 0.5-7 mol. % (Nb + In) co-doped TiO2 ceramics were synthesized by standard conventional solid-state reaction method. Microstructure studies showed that all samples were in pure rutile phase. The Nb and In ions were homogeneously distributed in the grain and grain boundary. Impedance spectroscopy and I-V behavior analysis demonstrated that the ceramics may compose of semiconducting grains and insulating grain boundaries. The high conductivity of grain was associated with the reduction of Ti4+ ions to Ti3+ ions, while the migration of oxygen vacancy may account for the conductivity of grain boundary. The effects of annealing treatment and bias filed on electrical properties were investigated for co-doped TiO2 ceramics, where the electric behaviors of samples were found to be susceptible to the annealing treatment and bias field. The internal-barrier-layer-capacitance mechanism was used to explain the CP phenomenon, the effect of annealing treatment and nonlinear I-V behavior for co-doped rutile TiO2 ceramics. Compared with CaCu3Ti4O12 ceramics, the high activation energy of co-doped rutile TiO2 (3.05 eV for grain boundary) was thought to be responsible for the low dielectric loss.

  17. Enhanced ferromagnetism in co-doped BiFeO3 ceramics

    NASA Astrophysics Data System (ADS)

    Trivedi, Harsh; Singh, Deepa; Gupta, Rajeev; Garg, Ashish

    2012-02-01

    BiFeO3 (BFO) is the most studied multiferroic material with high ferroelectric polarization as well above room temperature transition temperatures. Studies have shown significant improvements in the electrical and magnetic properties of BFO upon atomic substitutions at Bi (A) and Fe (B) sites. While enhanced ferromagnetism upon A-site doping is attributed to the suppression of cycloidal spin ordering of Fe moments, B site substitution reduces leakage current by eliminating oxygen vacancies. This study aims to combine these two aspects by co-doping the material at A- and B- sites using La^3+ and V^3+/V^+5 respectively and to investigate the electrical and magnetic characteristics of co-doped BFO. La-doped LaxBi1-xFeO3 and co-doped LaxBi1-xVyFe1-yO3 (x = .05, 0.1, 0.15, 0.2; y = 0.03) samples were prepared solid-state reaction method. While La-doped samples show only reduced leakage without any discernible change in the magnetic characteristics, co-doped samples (La^3+ & V^5+ ) show significant enhancements in magnetic properties in addition to reduced leakage attributed to the elimination of oxygen vacancies. Improvement in the magnetic characteristics can be understood as a consequence of enhanced double exchange interaction between adjacent Fe ions. This argument is further strengthened by our observation that co-doped samples made by substitution of Fe with V^+3 show a magnetic response equivalent to that of only La-doped BFO samples.

  18. Defects in nonpolar (134{sup ¯}0) ZnO epitaxial film grown on (114) LaAlO{sub 3} substrate

    SciTech Connect

    Yen, Tzu-Chun Wang, Wei-Lin; Peng, Chun-Yen; Tian, Jr-Sheng; Ho, Yen-Teng; Chang, Li

    2014-03-15

    The defects in (134{sup ¯}0)ZnO epitaxial film grown on (114)LaAlO{sub 3} (LAO) have been systematically investigated by using transmission electron microscopy. At the ZnO/LAO interface, the Burgers vectors of misfit dislocations are identified to be 1/3[1{sup ¯}21{sup ¯}0] and 1/2[0001]. Threading dislocations with the Burgers vectors of 1/3〈112{sup ¯}0〉 and 〈0001〉 are distributed on the basal plane. In (134{sup ¯}0)ZnO film, the predominant planar defects are basal stacking faults (BSFs) with 1/6〈202{sup ¯}3〉 displacement vectors. The densities of dislocations and BSFs are about 3.8 × 10{sup 10} cm{sup −2} and 3.1 × 10{sup 5} cm{sup −1}, respectively.

  19. High-Hall-Mobility Al-Doped ZnO Films Having Textured Polycrystalline Structure with a Well-Defined (0001) Orientation.

    PubMed

    Nomoto, Junichi; Makino, Hisao; Yamamoto, Tetsuya

    2016-12-01

    Five hundred-nanometer-thick ZnO-based textured polycrystalline films consisting of 490-nm-thick Al-doped ZnO (AZO) films deposited on 10-nm-thick Ga-doped ZnO (GZO) films exhibited a high Hall mobility (μ H) of 50.1 cm(2)/Vs with a carrier concentration (N) of 2.55 × 10(20) cm(-3). Firstly, the GZO films were prepared on glass substrates by ion plating with dc arc discharge, and the AZO films were then deposited on the GZO films by direct current magnetron sputtering (DC-MS). The GZO interface layers with a preferential c-axis orientation play a critical role in producing AZO films with texture development of a well-defined (0001) orientation, whereas 500-nm-thick AZO films deposited by only DC-MS showed a mixture of the c-plane and the other plane orientation, to exhibit a μ H of 38.7 cm(2)/Vs with an N of 2.22 × 10(20) cm(-3). PMID:27365000

  20. Polymer solar cells with efficiency >10% enabled via a facile solution-processed Al-doped ZnO electron transporting layer (Presentation Recording)

    NASA Astrophysics Data System (ADS)

    Jagadamma, Lethy K.; Al-Senani, Mohammed; Amassian, Aram

    2015-10-01

    The present work details a facile and low-temperature (125C) solution-processed Al-doped ZnO (AZO) buffer layer functioning very effectively as electron accepting/hole blocking layer for a wide range of polymer:fullerene bulk heterojunction systems, and yielding power conversion efficiency in excess of 10% (8%) on glass (plastic) substrates. We show that ammonia addition to the aqueous AZO nanoparticle solution is a critically important step toward producing compact and smooth thin films which partially retain the aluminum doping and crystalline order of the starting AZO nanocrystals. The ammonia treatment appears to reduce the native defects via nitrogen incorporation, making the AZO film a very good electron transporter and energetically matched with the fullerene acceptor. Importantly, highly efficient solar cells are achieved without the need for additional surface chemical passivation or modification, which has become an increasingly common route to improving the performance of evaporated or solution-processed ZnO ETLs in solar cells.

  1. Studies on the Controlling of the Microstructural and Morphological Properties of Al Doped ZnO Thin Films Prepared by Hydrothermal Method

    NASA Astrophysics Data System (ADS)

    Gil Gang, Myeng; Shin, Seung Wook; Gurav, K. V.; Wang, YinBo; Agawane, G. L.; Lee, Jeong Yong; Moon, Jong-Ha; Hyeok Kim, Jin

    2013-10-01

    Al doped ZnO (AZO) thin films were prepared on ZnO coated glass substrates by hydrothermal synthesis technique using aqueous solutions containing zinc nitrate hexahydrate, ammonium hydroxide, and different sodium citrate concentrations at 60 °C for 6 h. The effects of different trisodium citrate concentrations on the microstructural, crystallinity, morphological, optical, and chemical properties of thin films were investigated. X-ray diffraction studies showed that the AZO thin films were grown as a polycrystalline wurtzite hexagonal phase with a c-axis preferred orientation and without an unwanted second phase regardless of trisodium citrate concentrations. The thickness and grain sizes of AZO thin films decreased with increasing trisodium citrate concentration. The microstructure of AZO thin films was changed from flat to needle shaped and the morphology was smoother with increasing trisodium citrate concentrations. The AZO thin films have a high transmittance in the visible region ranging from 75 to 85% and a sharp edge from 366 to 374 nm.

  2. High-Hall-Mobility Al-Doped ZnO Films Having Textured Polycrystalline Structure with a Well-Defined (0001) Orientation

    NASA Astrophysics Data System (ADS)

    Nomoto, Junichi; Makino, Hisao; Yamamoto, Tetsuya

    2016-06-01

    Five hundred-nanometer-thick ZnO-based textured polycrystalline films consisting of 490-nm-thick Al-doped ZnO (AZO) films deposited on 10-nm-thick Ga-doped ZnO (GZO) films exhibited a high Hall mobility ( μ H) of 50.1 cm2/Vs with a carrier concentration ( N) of 2.55 × 1020 cm-3. Firstly, the GZO films were prepared on glass substrates by ion plating with dc arc discharge, and the AZO films were then deposited on the GZO films by direct current magnetron sputtering (DC-MS). The GZO interface layers with a preferential c-axis orientation play a critical role in producing AZO films with texture development of a well-defined (0001) orientation, whereas 500-nm-thick AZO films deposited by only DC-MS showed a mixture of the c-plane and the other plane orientation, to exhibit a μ H of 38.7 cm2/Vs with an N of 2.22 × 1020 cm-3.

  3. Plasma-assisted hot filament chemical vapor deposition of AlN thin films on ZnO buffer layer: toward highly c-axis-oriented, uniform, insulative films

    NASA Astrophysics Data System (ADS)

    Alizadeh, M.; Mehdipour, H.; Ganesh, V.; Ameera, A. N.; Goh, B. T.; Shuhaimi, A.; Rahman, S. A.

    2014-12-01

    c-Axis-oriented aluminum nitride (AlN) thin film with improved quality was deposited on Si(111) substrate using ZnO buffer layer by plasma-assisted hot filament chemical vapor deposition. The optical and electrical properties and surface morphology as well as elemental composition of the AlN films deposited with and without ZnO buffer layer were investigated using a host of measurement techniques: X-ray diffraction (XRD), X-ray photoelectron spectroscopy (XPS), Raman spectroscopy, field emission scanning electron microscopy (FESEM), and current-voltage (I-V) characteristic measurement. The XRD and XPS results reveal that the AlN/ZnO/Si films are free of metallic Al particles. Also, cross-sectional FESEM observations suggest formation of a well-aligned, uniform, continuous, and highly (002) oriented structure for a bi-layered AlN film when Si(111) is covered with ZnO buffer. Moreover, a decrease in full width at half maximum of the E2 (high)-mode peak in Raman spectrum indicates a better crystallinity for the AlN films formed on ZnO/Si substrate. Finally, I-V curves obtained indicate that the electrical behavior of the AlN thin films switches from conductive to insulative when film is grown on a ZnO-buffered Si substrate.

  4. Preparation of ZnO nanoparticles showing upconversion luminescence through simple chemical method

    NASA Astrophysics Data System (ADS)

    Anjana, R.; Subha, P. P.; Markose, Kurias K.; Jayaraj, M. K.

    2016-05-01

    Upconversion luminescence is an interesting area while considering its applications in a vast variety of fields. Rare earth ions like erbium is the most studied and efficient candidate for achieving upconversion. Erbium and ytterbium co-doped ZnO nanoparticles were prepared through co-precipitation method. A strong red emission has been obtained while exciting with 980 nm laser. Dependence of luminescence emission colour on ytterbium concentration has been studied.

  5. Investigation of the biaxial stress of Al-doped ZnO thin films on a flexible substrate with RF magnetron sputtering

    NASA Astrophysics Data System (ADS)

    Huang, Kuo-Ting; Chen, Hsi-Chao; Cheng, Po-Wei; Chang, Jhe-Ming

    2016-01-01

    Transparent conductive Al-doped ZnO (AZO) thin films were deposited onto poly(ethylene terephthalate) (PET) substrate, using the radio frequency (RF) magnetron sputtering method. The residual stress of flexible electronics was investigated by a double beam shadow moiré interferometer with phase shifting interferometry (PSI). Moreover, the biaxial stress of AZO thin films can be graphically represented by using Mohr’s circle of stress. The residual stress of AZO thin films becomes more compressive with the increase in sputtering power. The maximum residual stress is -1115.74 MPa, and the shearing stress is 490.57 MPa at a sputtering power of 200 W. The trends of residual stress were evidenced by the X-ray diffraction (XRD) patterns and optical properties of AZO thin films. According to the evaluation results of the refractive index and the extinction coefficient, the AZO thin films have better quality when the sputtering power less than 100 W.

  6. Modeling of circular piezoelectric micro ultrasonic transducer using CuAl10Ni5Fe4 on ZnO film for sonar applications

    NASA Astrophysics Data System (ADS)

    Yaacob, M. I. H.; Arshad, M. R.; Manaf, A. Abd.

    2011-03-01

    Modeling and theoretical characterization of piezoelectric micro ultrasonic transducer ( pMUT) using ZnO film sandwiched between nickel aluminum bronze (CuAl10Ni5Fe4) electrodes was reported in this paper. The transducer is targeted to be utilized in sonar applications. Analyses on the model were carried out using finite element method. Model's dimensional parameters were optimized for desired performance. Simplified technique was proposed to determine transmit and receive sensitivities of the model. As the result, micro ultrasonic transducer model with resonance frequency of 40 kHz was proposed with estimated receive and transmit sensitivities of -93 dB re 1 V/μPa and 137 dB re 1 μPa/V, respectively. Further model validations require actual device fabrication and this will be included in our future works.

  7. Micro/Nano hierarchical peony-like Al doped ZnO superhydrophobic film: The guiding effect of (100) preferred seed layer

    PubMed Central

    Li, Yang; Wang, Jingfeng; Kong, Yi; Zhou, Jia; Wu, Jinzhu; Wang, Gang; Bi, Hai; Wu, Xiaohong; Qin, Wei; Li, Qingkun

    2016-01-01

    In this communication, we present a versatile and controllable strategy for formation of superhydrophobic micro/nano hierarchical Al doped ZnO (AZO) films with a water contact angle (CA) of 170 ± 4°. This strategy involves a two-step layer-by-layer process employing an atomic layer deposition (ALD) technique followed by a hydrothermal method, and the resulting novel AZO surface layer consists of (100) dominant nano-rice-like AZO seed layer (the water CA of 110 ± 4°) covered with micro-peony-like AZO top. The growth mechanisms and superhydrophobic properties of the hierarchical AZO layer are discussed. It is believed that the present route holds promise for future success in the design and development of practical superhydrophobic materials. PMID:26753877

  8. Polarity assignment in ZnTe, GaAs, ZnO, and GaN-AlN nanowires from direct dumbbell analysis.

    PubMed

    de la Mata, Maria; Magen, Cesar; Gazquez, Jaume; Utama, Muhammad Iqbal Bakti; Heiss, Martin; Lopatin, Sergei; Furtmayr, Florian; Fernández-Rojas, Carlos J; Peng, Bo; Morante, Joan Ramon; Rurali, Riccardo; Eickhoff, Martin; Fontcuberta i Morral, Anna; Xiong, Qihua; Arbiol, Jordi

    2012-05-01

    Aberration corrected scanning transmission electron microscopy (STEM) with high angle annular dark field (HAADF) imaging and the newly developed annular bright field (ABF) imaging are used to define a new guideline for the polarity determination of semiconductor nanowires (NWs) from binary compounds in two extreme cases: (i) when the dumbbell is formed with atoms of similar mass (GaAs) and (ii) in the case where one of the atoms is extremely light (N or O: ZnO and GaN/AlN). The theoretical fundaments of these procedures allow us to overcome the main challenge in the identification of dumbbell polarity. It resides in the separation and identification of the constituent atoms in the dumbbells. The proposed experimental via opens new routes for the fine characterization of nanostructures, e.g., in electronic and optoelectronic fields, where the polarity is crucial for the understanding of their physical properties (optical and electronic) as well as their growth mechanisms. PMID:22493937

  9. Spatial distribution of electrical properties for Al-doped ZnO films deposited by dc magnetron sputtering using various inert gases

    SciTech Connect

    Sato, Yasushi; Ishihara, Keita; Oka, Nobuto; Shigesato, Yuzo

    2010-07-15

    Spatial distribution of electrical properties of Al-doped ZnO (AZO) films deposited by magnetron sputtering was investigated. To adjust the intensity of bombardment by high-energy particles, the AZO films were deposited using Ar, Kr, or Xe gas with varying plasma impedance. The spatial distribution of the electrical properties clearly depends on the sputtering gas. In the case of using Kr or Xe, the resistivity of the films in front of the target center and erosion areas was significantly enhanced, in contrast with Ar. This was attributed to an enhancement in bombardment damage due to the increased sputtering voltages required for Kr or Xe discharges. The increase in plasma impedance was due to the smaller coefficients for secondary-electron emission of the target surface by Kr or Xe impingements, which leads to the larger sputtering voltage.

  10. Micro/Nano hierarchical peony-like Al doped ZnO superhydrophobic film: The guiding effect of (100) preferred seed layer

    NASA Astrophysics Data System (ADS)

    Li, Yang; Wang, Jingfeng; Kong, Yi; Zhou, Jia; Wu, Jinzhu; Wang, Gang; Bi, Hai; Wu, Xiaohong; Qin, Wei; Li, Qingkun

    2016-01-01

    In this communication, we present a versatile and controllable strategy for formation of superhydrophobic micro/nano hierarchical Al doped ZnO (AZO) films with a water contact angle (CA) of 170 ± 4°. This strategy involves a two-step layer-by-layer process employing an atomic layer deposition (ALD) technique followed by a hydrothermal method, and the resulting novel AZO surface layer consists of (100) dominant nano-rice-like AZO seed layer (the water CA of 110 ± 4°) covered with micro-peony-like AZO top. The growth mechanisms and superhydrophobic properties of the hierarchical AZO layer are discussed. It is believed that the present route holds promise for future success in the design and development of practical superhydrophobic materials.

  11. Boron, bismuth co-doping of gallium arsenide and other compounds for photonic and heterojunction bipolar transistor devices

    SciTech Connect

    Mascarenhas, Angelo

    2015-07-07

    Isoelectronic co-doping of semiconductor compounds and alloys with acceptors and deep donors is sued to decrease bandgap, to increase concentration of the dopant constituents in the resulting alloys, and to increase carrier mobilities lifetimes. For example, Group III-V compounds and alloys, such as GaAs and GaP, are isoelectronically co-doped with, for example, B and Bi, to customize solar cells, and other semiconductor devices. Isoelectronically co-doped Group II-VI compounds and alloys are also included.

  12. Synthesis, structural, optical, and magnetic properties of Co doped, Sm doped and Co+Sm co-doped ZnS nanoparticles

    NASA Astrophysics Data System (ADS)

    Poornaprakash, B.; Poojitha, P. T.; Chalapathi, U.; Subramanyam, K.; Park, Si-Hyun

    2016-09-01

    The compositional, structural, optical and magnetic properties of ZnS, Zn0.98Co0.02S, Zn0.98Sm0.02S and Zn0.96Co0.02Sm0.02S nanoparticles synthesized by a hydrothermal method are presented and discussed. X-ray diffraction (XRD), high resolution transmission electron microscopy (HRTEM) and selected area electron diffraction (SAED) studies revealed that all the samples exhibited cubic structure without any impurity phases. X-ray photoelectron spectroscopy (XPS) results revealed that the Co and Sm ions existed in +2 and +3 states in these samples. The photoluminescence (PL) spectra of all the samples exhibited a broad emission in the visible region. The room temperature magnetization versus applied magnetic field (M-H) curves demonstrated that the Sm+Co doped nanoparticles exhibited enhanced ferromagnetic behavior compare to Co and Sm individually doped ZnS nanoparticles, which is probably due to the exchange interaction between conductive electrons with local spin polarized electrons on the Co2+ or Sm3+ ions. This study intensifies the understanding of the novel performances of co-doped ZnS nanoparticles and also provides possibilities to fabricate future spintronic devices.

  13. Homoepitaxial ZnO Film Growth

    NASA Technical Reports Server (NTRS)

    Zhu, Shen; Su, C-H; Lehoczky, S. L.; Harris, M. T.; Callahan, M. J.; McCarty, P.; George, M. A.; Rose, M. Franklin (Technical Monitor)

    2000-01-01

    ZnO films have high potential for many applications, such as surface acoustic wave filters, UV detectors, and light emitting devices due to its structural, electrical, and optical properties. High quality epitaxial films are required for these applications. The Al2O3 substrate is commonly used for ZnO heteroepitaxial growth. Recently, high quality ZnO single crystals are available for grow homoepitaxial films. Epitaxial ZnO films were grown on the two polar surfaces (O-face and Zn-face) of (0001) ZnO single crystal substrates using off-axis magnetron sputtering deposition. As a comparison, films were also deposited on (0001) Al2O3 substrates. It was found that the two polar ZnO surfaces have different photoluminescence (PL) spectrum, surface structure and morphology, which strongly influence the epitaxial film growth. The morphology and structure of homoepitaxial films grown on the ZnO substrates were different from heteroepitaxial films grown on the Al2O3. An interesting result shows that high temperature annealing of ZnO single crystals will improve the surface structure on the O-face surface rather than the opposite surface. The measurements of PL, low-angle incident x-ray diffraction, and atomic force microscopy of ZnO films indicate that the O-terminated surface is better for ZnO epitaxial film growth.

  14. Low-temperature ferromagnetic properties in Co-doped Ag{sub 2}Se nanoparticles

    SciTech Connect

    Yang, Fengxia E-mail: xia9020@hust.edu.cn; Yu, Gen; Han, Chong; Liu, Tingting; Zhang, Duanming; Xia, Zhengcai E-mail: xia9020@hust.edu.cn

    2014-01-06

    β-Ag{sub 2}Se is a topologically nontrivial insulator. The magnetic properties of Co-doped Ag{sub 2}Se nanoparticles with Co concentrations up to 40% were investigated. The cusp of zero-field-cooling magnetization curves and the low-temperature hysteresis loops were observed. With increasing concentration of Co{sup 2+} ions mainly substituting Ag{sub I} sites in the Ag{sub 2}Se structure, the resistivity, Curie temperature T{sub c}, and magnetization increased. At 10 T, a sharp drop of resistance near T{sub c} was detected due to Co dopants. The ferromagnetic behavior in Co-doped Ag{sub 2}Se might result from the intra-layer ferromagnetic coupling and surface spin. This magnetic semiconductor is a promising candidate in electronics and spintronics.

  15. Enhanced dielectric, impedance and magnetic characteristics of Co doped multiferroic Bi2Fe4O9

    NASA Astrophysics Data System (ADS)

    Mohapatra, S. R.; Sahu, B.; Kaushik, S. D.; Singh, A. K.

    2016-05-01

    Multiferroic Bi2Fe4(1-x)Co4xO9 (x = 0, 0.05) were prepared by conventional solid state reaction route. X-ray diffraction (XRD) result indicated the decrease in lattice parameters due to 5% Co doping. Grain growth in the doped composition was confirmed from surface morphology characterization. Frequency dependent real part of dielectric constant (ɛ') at room temperature showed an enhancement of ~70% in doped sample at 1 kHz. A decrease in peak height with doping was noticed from the modulus study. Lastly, room temperature M-H measurement upto 9 T showed induced ferromagnetism in Bi2Fe4O9 due to 5% Co doping. The values of remnant magnetization (Mr) and coercive field (Hc) in Bi2Fe3.8Co0.2O9 was found to be 0.007 µB/f.u. and 0.295 kOe respectively.

  16. Structural, optical and magnetic properties of ultrafine mono dispersed Co doped maghemite nanoparticles

    NASA Astrophysics Data System (ADS)

    Gaur, Umesh Kumar; Priyadarshi, Himanshu; Kumar, Anil; Varma, G. D.

    2015-06-01

    Ultrafine Co doped γ- Fe2O3 nanoparticles have been synthesized by co-precipitation method and studied the effect of doping on structural, optical and magnetic properties. The XRD results confirm that synthesized material is γ- Fe2O3 nanoparticles, and the particle sizes are 10 and 3.6 nm for 5 and 10 % Co doped samples, respectively. FESEM, TEM and optical characterization reveal decrease in particle size and increase in band gap with increased doping level. Room temperature M-H plots indicate the increase in magnetization (63.7 emu/g for 10 % doped sample) with increasing doping. A small shift towards positive axis is observed in the M-H plots of doped sample. In this paper the correlation between the structural characteristics and observed optical and magnetic properties has been described and discussed.

  17. Upconversion luminescence of Yb 3+/Tb 3+ co-doped tellurite glasses

    NASA Astrophysics Data System (ADS)

    Kochanowicz, Marcin; Zmojda, Jacek; Dorosz, Dominik; Miluski, Piotr; Dorosz, Jan

    2014-05-01

    In the article the upconversion luminescence ofTeO2- GeO2 - PbO - PbF2- BaO - Nb2O5 - LaF3 glass system co-doped withYb 3+ /Tb 3+ under 976 nm laser diode excitation was investigated. The influence of Tb2O3concentration on the luminescent properties was determined. Measured strong luminescence at492, 547, 588, 622 nm correspond to 5D4→7FJ (J=6, 4, 3) transitions. Energy transfer (ET) mechanism involved in observed emission was discussed. The highest upconversion emission intensity was obtained in the tellurite glass co-doped with 0.5 Yb2O3/0.5 Tb2O3 (mol%).

  18. Enhanced electrical activation in In-implanted Ge by C co-doping

    SciTech Connect

    Feng, R. Kremer, F.; Mirzaei, S.; Medling, S. A.; Ridgway, M. C.; Sprouster, D. J.; Decoster, S.; Pereira, L. M. C.; Glover, C. J.; Russo, S. P.

    2015-11-23

    At high dopant concentrations in Ge, electrically activating all implanted dopants is a major obstacle in the fulfillment of high-performance Ge-channel complementary metal oxide semiconductor devices. In this letter, we demonstrate a significant increase in the electrically-active dopant fraction in In-implanted Ge by co-doping with the isovalent element C. Electrical measurements have been correlated with x-ray absorption spectroscopy and transmission electron microscopy results in addition to density functional theory simulations. With C + In co-doping, the electrically active fraction was doubled and tripled at In concentrations of 0.2 and 0.7 at. %, respectively. This marked improvement was the result of C-In pair formation such that In-induced strain in the Ge lattice was reduced while the precipitation of In and the formation of In-V clusters were both suppressed.

  19. Electrode effects in dielectric spectroscopy measurements on (Nb +In) co-doped TiO2

    NASA Astrophysics Data System (ADS)

    Crandles, David; Yee, Susan; Savinov, Maxim; Nuzhnyy, Dimitri; Petzelt, Jan; Kamba, Stanislav; Prokes, Jan

    Recently, several papers reported the discovery of giant permittivity and low dielectric loss in (Nb+In) co-doped TiO2. A series of tests was performed which included the measurement of the frequency dependence of the dielectric permittivity and ac conductivity of co-doped (Nb+In)TiO2 as a function of electrode type, sample thickness and temperature. The data suggest that the measurements are strongly affected by the electrodes. The consistency between four contact van der Pauw dc conductivity measurements and bulk conductivity values extracted from two contact ac conductivity measurements suggest that the values of colossal permittivity are, at least in part, a result of Schottky barrier depletion widths that depend on electrode type and temperature. Nserc, Czech Science Foundation (Project 15-08389S).

  20. Defect Chemistry Study of Nitrogen Doped ZnO Thin Films

    SciTech Connect

    Miami University: Dr. Lei L. Kerr Wright State University: Dr. David C. Look and Dr. Zhaoqiang Fang

    2009-11-29

    Our team has investigated the defect chemistry of ZnO:N and developed a thermal evaporation (vapor-phase) method to synthesis p-type ZnO:N. Enhanced p-type conductivity of nitrogen doped ZnO via nano/micro structured rods and Zn-rich Co-doping process were studied. Also, an extended X-Ray absorption fine structure study of p-type nitrogen doped ZnO was conducted. Also reported are Hall-effect, photoluminescence, and DLTS studies.

  1. Synthesis of N, F and S co-doped graphene quantum dots

    NASA Astrophysics Data System (ADS)

    Kundu, Sumana; Yadav, Ram Manohar; Narayanan, T. N.; Shelke, Manjusha V.; Vajtai, Robert; Ajayan, P. M.; Pillai, Vijayamohanan K.

    2015-07-01

    Graphene quantum dots (GQDs) are a promising category of materials with remarkable size dependent properties like tunable bandgap and photoluminescence along with the possibility of effective chemical functionalization. Doping of GQDs with heteroatoms is an interesting way of regulating their properties. Herein, we report a facile and scalable one-step synthesis of luminescent GQDs, substitutionally co-doped with N, F and S, of ~2 nm average size by a microwave treatment of multi-walled carbon nanotubes in a customized ionic liquid medium. The use of an ionic liquid coupled with the use of a microwave technique enables not only an ultrafast process for the synthesis of co-doped GQDs, but also provides excellent photoluminescence quantum yield (70%), perhaps due to the interaction of defect clusters and dopants.Graphene quantum dots (GQDs) are a promising category of materials with remarkable size dependent properties like tunable bandgap and photoluminescence along with the possibility of effective chemical functionalization. Doping of GQDs with heteroatoms is an interesting way of regulating their properties. Herein, we report a facile and scalable one-step synthesis of luminescent GQDs, substitutionally co-doped with N, F and S, of ~2 nm average size by a microwave treatment of multi-walled carbon nanotubes in a customized ionic liquid medium. The use of an ionic liquid coupled with the use of a microwave technique enables not only an ultrafast process for the synthesis of co-doped GQDs, but also provides excellent photoluminescence quantum yield (70%), perhaps due to the interaction of defect clusters and dopants. Electronic supplementary information (ESI) available: PLQY calculation, MWCNT synthetic details, TGA analysis and tabular format of GQD synthesis processes. See DOI: 10.1039/c5nr02427g

  2. Reversible Change in Electrical and Optical Properties in Epitaxially Grown Al-Doped ZnO Thin Films

    SciTech Connect

    Noh, J. H.; Jung, H. S.; Lee, J. K.; Kim, J. Y; Cho, C. M.; An, J.; Hong, K. S.

    2008-01-01

    Aluminum-doped ZnO (AZO) films were epitaxially grown on sapphire (0001) substrates using pulsed laser deposition. As-deposited AZO films had a low resistivity of 8.01 x 10{sup -4} {Omega} cm. However, after annealing at 450 C in air, the electrical resistivity of the AZO films increased to 1.97 x 10{sup -1} {Omega} cm because of a decrease in the carrier concentration. Subsequent annealing of the air-annealed AZO films in H{sub 2} recovered the electrical conductivity of the AZO films. In addition, the conductivity change was reversible upon repeated air and H{sub 2} annealing. A photoluminescence study showed that oxygen interstitial (O{sub i}) is a critical material parameter allowing for the reversible control of the electrical conducting properties of AZO films.

  3. Structural, optical and dielectric property of Co doped Bi{sub 2}Fe{sub 4}O{sub 9}

    SciTech Connect

    Swain, Smita Mohapatra, S. R. Sahoo, B. Singh, A. K.

    2014-04-24

    Multiferroic Bi{sub 2}Fe{sub 4}O{sub 9} and Co doped Bi{sub 2}Fe{sub 4}O{sub 9} are prepared by solid state route reaction method using bismuth oxide(Bi{sub 2}O{sub 3}), iron oxide(Fe{sub 2}O{sub 3}) and cobalt oxide (Co{sub 3}O{sub 4}). Their structural optical and dielectric properties are studied and compared. X-ray diffraction (XRD) results confirm that there is no change in crystal structure due to Co doping. From dielectric constant measurement we conclude that dielectric constant increases due to Co doping. UV-Visible plot shows due to Co doping bang gap energy increases.

  4. Gain dynamics in Er(3+):Yb(+) co-doped fiber amplifiers.

    PubMed

    Steinke, M; Neumann, J; Kracht, D; Wessels, P

    2015-06-01

    Understanding the gain dynamics of fiber amplifiers is essential for the implementation and active stabilization of low noise amplifiers or for coherent beam combining schemes. The gain dynamics of purely Er3+ or Yb3+ doped fiber amplifiers are well studied, whereas no analysis for co-doped systems, especially for Er3+:Yb3+ co-doped fiber amplifiers has been performed, so far. Here, we analyze for the first time the gain dynamics of Er3+:Yb3+ co-doped fiber amplifiers theoretically and experimentally. It is shown that due to the energy transfer between the Yb3+ and Er3+ ions a full analytical solution is not possible. Thus, we used numerical simulations to gain further insights. Comparison of experimental and numerical results shows good qualitative agreement. In addition, we were able to determine the Yb3+-Er3+ transfer function of the energy transfer experimentally. PMID:26072851

  5. Growth of Co-doped (Ba,Sr)TiO 3 single crystals and their characterization

    NASA Astrophysics Data System (ADS)

    Madeswaran, S.; Giridharan, N. V.; Jayavel, R.; Subramanian, C.

    2002-04-01

    Single crystals of Co-doped B 1- xSr xTiO 3 (Co:BST) have been grown by high-temperature solution growth technique. The dopant has significant effect on the growth parameters and considerably reduced the twin formation in the grown crystal. Bulk single crystals of dimensions 5×5×4 mm 3 have been grown with optimized growth parameters. Layer growth and vein-like structure patterns, indicative of 2D nucleation mechanism, have been observed on the grown crystals. The presence of dopant in the grown crystals was confirmed by EDX analysis. For lower doping concentration (0.1 mol%), the crystal possesses tetragonal structure and changes to cubic for higher dopant level (1 and 5 mol%) Co doping in BST increases the dielectric constant values and decreases the Curie temperature ( Tc). The spontaneous polarization ( Ps) value for 0.1 mol% of Co-doped BST crystal is measured to be 22 μc/cm 2 and the value decreases with increasing Co concentration.

  6. Photoluminescence properties of ZnS nanoparticles co-doped with Pb 2+ and Cu 2+

    NASA Astrophysics Data System (ADS)

    Yang, Ping; Lü, Mengkai; Xü, Dong; Yuan, Duolong; Zhou, Guangjun

    2001-03-01

    Nanometer-scale ZnS, ZnS:Cu, ZnS:Pb, and ZnS co-doped with Cu 2+ and Pb 2+ have been synthesized using a chemical precipitation method. X-ray diffraction analysis shows that the diameter of the particles is 2-4 nm. These nanocrystals can be doped with copper and lead during the synthesis without altering the X-ray diffraction pattern. However, doping has shifted the luminescence to 530 nm (Cu 2+-doped) and 500-550 nm (co-doped with Cu 2+ and Pb 2+). In the case of ZnS:Pb nanocrystals, a relatively broad emission band (color range from blue to yellow) has been observed and its excitation wavelength shows a red shift. The photoluminescence intensity increases as the ZnS nanoparticles co-doped with Pb 2+ and Cu 2+. The results strongly suggest that doped ZnS nanocrystals, especially two kinds of metals activated ZnS nanocrystals, form a new class of luminescent materials.

  7. Preparation and photocatalytic activity of nonmetal Co-doped titanium dioxide photocatalyst

    NASA Astrophysics Data System (ADS)

    Sun, Xiaogang; Xing, Jun; Qiu, Jingping

    2016-06-01

    A series of boron and sulfur co-doped titanium dioxide (TiO2) photocatalysts were prepared by a sol-gel method using boric acid, thiourea and tetrabutyl titanate [Ti(OC4H9)4] as precursors. The photoabsorbance of as-prepared photocatalysts was measured by UV-Vis diffuse reflectance spectroscopy (DRS), and its microstructure was characterized by scanning electron microscopy (SEM), X-ray diffraction (XRD) and N2 adsorption-desorption measurements. The prepared photocatalysts consisted of the anatase phase mainly in the form of spherical particles. The photocatalytic performance was studied by photodegradation of methyl blue (MB) in water under UV and visible light irradiation. The calcination temperature and the codoping content influenced the photoactivity. The synergistic effect of boron and sulfur co-doping played an important role in improving the photocatalytic activity. In addition, the possibility of cyclic usage of codoped TiO2 was also confirmed, the photocatalytic activity of TiO2 remained above 91% of that of the fresh sample after being used four times. It was shown that the co-doped TiO2 could be activated by visible light and could thus be potentially applied for the treatment of water contaminated by organic pollutants.

  8. Study of new states in visible light active W, N co-doped TiO{sub 2} photo catalyst

    SciTech Connect

    Sajjad, Ahmed Khan Leghari; Shamaila, Sajjad; Zhang, Jinlong

    2012-11-15

    Highlights: ► Visible light efficient W, N co-doped TiO{sub 2} photo catalysts are prepared by sol–gel. ► Oxygen vacancies are detected in the form of new linkages as N-Ti-O, N-W-O, Ti-O-N and W-O-N. ► W, N co-doped titania has new energy states which narrows the band gap effectively. ► Oxygen vacancies are proved to be the cause for high photo catalytic activity. ► W and N co-doping plays the major role to make the composite thermally stable. -- Abstract: The visible light efficient W, N co-doped TiO{sub 2} photo catalysts are prepared by sol–gel method. New linkages of N, W and O are formed as N-Ti-O, N-W-O, Ti-O-N and W-O-N. Electron paramagnetic resonance illustrates the presence of oxygen vacancies in W, N co-doped TiO{sub 2} acting as trapping agencies for electrons to produce active species. X-ray photoelectron spectroscopy confirms the presence of new energy states. New linkages and oxygen vacancies are proved to be the main cause for the improved photo catalytic performances. W, N co-doped TiO{sub 2} has new energy states which narrow the band gap effectively. W, N co-doped TiO{sub 2} is thermally stable and retains its anatase phase up to 900 °C. 4.5% W, N co-doped TiO{sub 2} showed superior activity for the degradation of Rhodamine B and 2,4-dichlorophenol as compared to pure titania, Degussa P-25, traditional N-doped TiO{sub 2} and pure WO{sub 3}.

  9. Near-infrared multi-wavelengths long persistent luminescence of Nd3+ ion through persistent energy transfer in Ce3+, Cr3+ co-doped Y3Al2Ga3O12 for the first and second bio-imaging windows

    NASA Astrophysics Data System (ADS)

    Xu, Jian; Tanabe, Setsuhisa; Sontakke, Atul D.; Ueda, Jumpei

    2015-08-01

    We developed a persistent phosphor of Y3Al2Ga3O12 doped with Nd3+, Ce3+, Cr3+ ions (YAGG:Nd-Ce-Cr) exhibiting long (>10 h) persistent luminescence at multi-wavelengths of around 880, 1064, and 1335 nm due to f-f transitions of Nd3+ and at 505 nm due to Ce3+:5d1→4f transition. The intense near-infrared (NIR) persistent luminescence bands from Nd3+ match well with the first (650-950 nm) and second (1000-1400 nm) bio-imaging windows. The NIR persistent radiance of the YAGG:Nd-Ce-Cr phosphor (0.33 × 10-1 mW/Sr/m2) at 60 min after ceasing blue light illumination was over 2 times higher than that of the widely used ZnGa2O4:Cr3+ red persistent phosphor (0.15 × 10-1 mW/Sr/m2).

  10. Relation between surface and bulk electronic properties of Al doped ZnO films deposited at varying substrate temperature by radio frequency magnetron sputtering

    NASA Astrophysics Data System (ADS)

    Singh, C. C.; Patel, T. A.; Panda, E.

    2015-06-01

    In this study, a qualitative relationship between the surface and bulk electronic states for Al-doped ZnO (AZO) thin films (thickness < 260 nm) is established. To this end, AZO films were deposited on soda lime glass substrates by varying substrate temperature (Ts) from 303 K to 673 K in RF magnetron sputtering. All these AZO films are found to have grown in ZnO hexagonal wurtzite structure with strong (002) orientation of the crystallites and with an average transmittance of 84%-91% in the visible range. Room temperature scanning tunneling spectroscopy measurements reveal semiconducting behavior for the films deposited at Ts ≤ 373 K and semi-metallic behavior for those deposited at Ts > 373 K. Further, these films show two modes of electron tunneling, (a) direct tunneling at lower bias voltage and (b) FN tunneling at higher bias voltage, with transition voltage ( Vtrans ) shifting towards lower bias voltage (and thereby reducing the barrier height ( Φ)) with increasing Ts. This is attributed to additional (local) density of states near the Fermi level of these AZO films because of higher carrier concentration ( ne ) at increased Ts. Thus, qualitatively, the behavior in both the local surface electronic states and bulk state electronic properties for these deposited AZO films are found to follow similar trends with increasing Ts. The variation in local barrier heights (indicative of the local surface electronic structures) across the AZO film surface is found to be smaller for the films deposited at Ts ≤ 373 K, where semiconducting behavior is observed and wider for the semi-metallic AZO films deposited at higher Ts > 373 K, indicating a larger inhomogeneity of local surface electronic properties at higher bulk carrier concentration.

  11. Passivation analysis of silicon surfaces via sol—gel derived Al-rich ZnO film

    NASA Astrophysics Data System (ADS)

    Khan, Firoz; Baek, Seong-Ho; Kim, Jae Hyun

    2015-01-01

    Electronic recombination losses can be reduced via passivation of silicon surfaces. Most techniques available in the literature are either not cost effective or not applicable for solar cell applications. We investigate low cost sol-gel derived Al-rich zinc oxide (ZnO:Al) film and its effective passivation of p-type silicon surfaces. Herein, we present the elemental composition of the film and interfacial structure of ZnO:Al/Si using FTIR, XPS, TEM, and SIMS characterizations. ZnO:Al is polycrystalline and contains some very small amorphous regions of Al2O3. At the ZnO:Al/c-Si interface, a thin SiOx layer with a thickness of ˜6 nm is formed. The XPS analyses reveal that the Al/Zn molar ratio in the ZnO:Al increases from ˜10% at the surface to ˜80% at the ZnO:Al/c-Si interface. The hydrogen content also gradually increases from the surface to the interface. The FTIR absorption area corresponding to the Si-H bonding is ˜2.89 au. The obtained hydrogen concentration is ˜3.93 × 1022 atoms cm-3. A fixed negative charge is created by ZnO:Al on ZnO//SiOx interface. The thermal equilibrium was established between Si and ZnO:Al through SiOx by electron tunneling current. Here, the c-Si may be passivated for two reasons: (i) Al creates defects on the ZnO:Al/c-Si interface and H is attached to the defects (dangling bonds) and (ii) due to the field effect passivation via the negative charged ZnO:Al film.

  12. γ irradiation induced effects on bismuth active centres and related photoluminescence properties of Bi/Er co-doped optical fibres

    NASA Astrophysics Data System (ADS)

    Sporea, D.; Mihai, L.; Neguţ, D.; Luo, Yanhua; Yan, Binbin; Ding, Mingjie; Wei, Shuen; Peng, Gang-Ding

    2016-07-01

    We investigate the effects of γ irradiation on bismuth active centres (BACs) and related photoluminescence properties of bismuth/erbium co-doped silica fibre (BEDF), [Si] ~28, [Ge] ~1.60, [Al] ~0.10, [Er] ~ <0.10 and [Bi] ~0.10 atom%, fabricated by in-situ solution doping and Modified Chemical Vapor Deposition (MCVD). The samples were irradiated at 1 kGy, 5 kGy, 15 kGy, 30 kGy and 50 kGy doses, and dose rate of 5.5 kGy/h, at room temperature. The optical properties of BEDF samples are tested before and after γ irradiation. We found that high dose γ irradiation could significantly influence the formation and composition of BACs and their photoluminescence performance, as important changes in absorption and emission properties associated with the 830 nm pump produces the direct evidence of γ irradiation effects on BAC-Si. We notice that the saturable to unsaturable absorption ratio at pump wavelength could be increased with high dose γ irradiation, indicating that emission and pump efficiency could be increased by γ irradiation. Our experimental results also reveal good radiation survivability of the BEDF under low and moderate γ irradiation. Our investigation suggests the existence of irradiation related processing available for tailoring the photoluminescence properties and performance of bismuth doped/co-doped fibres.

  13. Y2O3 and Yb2O3 Co-doped Strontium Hafnate as a New Thermal Barrier Coating Material

    NASA Astrophysics Data System (ADS)

    Ma, Wen; Li, Peng; Dong, Hongying; Bai, Yu; Zhao, Jinlan; Fan, Xiaoze

    2014-01-01

    Y2O3 and Yb2O3 co-doped strontium hafnate powder with chemistry of Sr(Hf0.9Y0.05Yb0.05)O2.95 (SHYY) was synthesized by a solid-state reaction at 1450 °C. The SHYY showed good phase stability not only from 200 to 1400 °C but also at a high temperature of 1450 °C for a long period, analyzed by differential scanning calorimetry and x-ray diffraction, respectively. The coefficient of thermal expansion of the sintered bulk SHYY was recorded by a high-temperature dilatometer and revealed a positive influence on phase transitions of SrHfO3 by co-doping with Y2O3 and Yb2O3. The thermal conductivity of the bulk SHYY was approximately 16% lower in contrast to that of SrHfO3 at 1000 °C. Good chemical compatibility was observed for SHYY with 8YSZ or Al2O3 powders after a 24 h heat treatment at 1250 °C. The phase stability and the microstructure evolution of the as-sprayed SHYY coating during annealing at 1400 °C were also investigated.

  14. γ irradiation induced effects on bismuth active centres and related photoluminescence properties of Bi/Er co-doped optical fibres.

    PubMed

    Sporea, D; Mihai, L; Neguţ, D; Luo, Yanhua; Yan, Binbin; Ding, Mingjie; Wei, Shuen; Peng, Gang-Ding

    2016-01-01

    We investigate the effects of γ irradiation on bismuth active centres (BACs) and related photoluminescence properties of bismuth/erbium co-doped silica fibre (BEDF), [Si] ~28, [Ge] ~1.60, [Al] ~0.10, [Er] ~ <0.10 and [Bi] ~0.10 atom%, fabricated by in-situ solution doping and Modified Chemical Vapor Deposition (MCVD). The samples were irradiated at 1 kGy, 5 kGy, 15 kGy, 30 kGy and 50 kGy doses, and dose rate of 5.5 kGy/h, at room temperature. The optical properties of BEDF samples are tested before and after γ irradiation. We found that high dose γ irradiation could significantly influence the formation and composition of BACs and their photoluminescence performance, as important changes in absorption and emission properties associated with the 830 nm pump produces the direct evidence of γ irradiation effects on BAC-Si. We notice that the saturable to unsaturable absorption ratio at pump wavelength could be increased with high dose γ irradiation, indicating that emission and pump efficiency could be increased by γ irradiation. Our experimental results also reveal good radiation survivability of the BEDF under low and moderate γ irradiation. Our investigation suggests the existence of irradiation related processing available for tailoring the photoluminescence properties and performance of bismuth doped/co-doped fibres. PMID:27440386

  15. γ irradiation induced effects on bismuth active centres and related photoluminescence properties of Bi/Er co-doped optical fibres

    PubMed Central

    Sporea, D.; Mihai, L.; Neguţ, D.; Luo, Yanhua; Yan, Binbin; Ding, Mingjie; Wei, Shuen; Peng, Gang-Ding

    2016-01-01

    We investigate the effects of γ irradiation on bismuth active centres (BACs) and related photoluminescence properties of bismuth/erbium co-doped silica fibre (BEDF), [Si] ~28, [Ge] ~1.60, [Al] ~0.10, [Er] ~ <0.10 and [Bi] ~0.10 atom%, fabricated by in-situ solution doping and Modified Chemical Vapor Deposition (MCVD). The samples were irradiated at 1 kGy, 5 kGy, 15 kGy, 30 kGy and 50 kGy doses, and dose rate of 5.5 kGy/h, at room temperature. The optical properties of BEDF samples are tested before and after γ irradiation. We found that high dose γ irradiation could significantly influence the formation and composition of BACs and their photoluminescence performance, as important changes in absorption and emission properties associated with the 830 nm pump produces the direct evidence of γ irradiation effects on BAC-Si. We notice that the saturable to unsaturable absorption ratio at pump wavelength could be increased with high dose γ irradiation, indicating that emission and pump efficiency could be increased by γ irradiation. Our experimental results also reveal good radiation survivability of the BEDF under low and moderate γ irradiation. Our investigation suggests the existence of irradiation related processing available for tailoring the photoluminescence properties and performance of bismuth doped/co-doped fibres. PMID:27440386

  16. Valence band structure and magnetic properties of Co-doped Fe3O4(100) films

    NASA Astrophysics Data System (ADS)

    Ran, F. Y.; Tsunemaru, Y.; Hasegawa, T.; Takeichi, Y.; Harasawa, A.; Yaji, K.; Kim, S.; Kakizaki, A.

    2011-06-01

    Structural and magnetic properties, and the valence band structure of pure and Co-doped (up to 33%) Fe3O4(100) films were investigated. Reconstruction of the Fe3O4(100) surface is found to be blocked by Co doping. Doped Co ions in Fe3O4 are in a charge state of 2 + and substitute the Fe2+ in the B site of Fe3O4. All the films exhibit room temperature ferromagnetism. Co doping changes the coercivity and reduces saturation magnetization. The density of states near the Fermi level is reduced by Co doping due to the decrease of Fe2+ in the B site, which might responsible for the decrease in conductivity and magnetoresistance of Co-doped Fe3O4. The Verwey transition in the range of 100-120 K is observed for the pure Fe3O4 film, while no transition could be detected for Co-doped Fe3O4 films.

  17. An optical study of the D—D neutron irradiation-induced defects in Co- and Cu-doped ZnO wafers

    NASA Astrophysics Data System (ADS)

    Wang, Yun-Bo; Li, Gong-Ping; Xu, Nan-Nan; Pan, Xiao-Dong

    2013-03-01

    Room-temperature photoluminescence and optical transmittance spectroscopy of Co-doped (1 × 1014, 5 × 1016, and 1 × 1017 cm-2) and Cu-doped (5 × 1016 cm-2) ZnO wafers irradiated by D—D neutrons (fluence of 2.9 × 1010 cm-2) have been investigated. After irradiation, the Co or Cu metal and oxide clusters in doped ZnO wafers are dissolved, and the würtzite structure of ZnO substrate for each sample remains unchanged and keeps in high c-axis preferential orientation. The degree of irradiation-induced crystal disorder reflected from the absorption band tail parameter (E0) is far greater for doped ZnO than the undoped one. Under the same doping concentration, the Cu-doped ZnO wafer has much higher irradiation-induced disorder than the Co-doped one. Photoluminescence measurements indicate that the introduction rate of both the zinc vacancy and the zinc interstitial is much higher for the doped ZnO wafer with a high doping level than the undoped one. In addition, both crystal lattice distortion and defect complexes are suggested to be formed in doped ZnO wafers. Consequently, the Co- or Cu-doped ZnO wafer (especially with a high doping level) exhibits very low radiation hardness compared with the undoped one, and the Cu-doped ZnO wafer is much less radiation-hard than the Co-doped one.

  18. Enhancement Of Free Exciton Peak Intensity In Reactively Sputtered ZnO Thin Films On (0001) Al2O3

    SciTech Connect

    Tuezemen, S.; Guer, Emre; Yildirim, T.; Xiong, G.; Williams, R. T.

    2007-04-23

    Wide bandgap materials such as GaN with its direct bandgap structure have been developed rapidly for applications in short wavelength light emission. ZnO, II-VI oxide semiconductor, is also promising for various technological applications, especially for optoelectronic light emitting devices in the visible and ultraviolet (UV) range of the electromagnetic spectrum. Above-band-edge absorption spectra of reactively sputtered Zn- and O-rich samples exhibit free exciton (FX) and neutral acceptor bound exciton (A deg. X) features. It is shown that the residual acceptors which bind excitons with an energy of 75 meV reside about 312 meV above the valence band, according to effective mass theory. An intra-bandgap absorption feature peaking at 2.5 eV shows correlation with the characteristically narrow A-free exciton peak intensity. Relevant annealing processes are presented as a function of time and temperature dependently for both Zn- and O- rich thin films. Enhancement of the free exciton peak intensity is observed without disturbing the residual shallow acceptor profile which is necessary for at least background p-type conductivity.

  19. A comparative investigation on structure and multiferroic properties of bismuth ferrite thin films by multielement co-doping

    SciTech Connect

    Dong, Guohua; Tan, Guoqiang Luo, Yangyang; Liu, Wenlong; Xia, Ao; Ren, Huijun

    2014-12-15

    Highlights: • Multielement (Tb, Cr and Mn) co-doped BiFeO{sub 3} films were fabricated by CSD method. • Multielement co-doping induces a structural transition. • It is found effective to stabilize the valence of Fe ions at +3 by the strategy. • The co-doping at A/B-sites gives rise to the superior multiferroic properties. - Abstract: (Tb, Cr and Mn) multielement co-doped BiFeO{sub 3} (BTFCMO) thin films were prepared by the chemical solution deposition method on fluorine doped tin oxide (FTO) substrates. X-ray diffraction, Rietveld refinement and Raman analyses revealed that a phase transition from rhombohedral to triclinic structure occurs in the multielement co-doped BiFeO{sub 3} films. It is found that the doping is conducive to stabilizing the valence of Fe ions and reducing leakage current. In addition, the highly enhanced ferroelectric properties with a huge remanent polarization (2P{sub r}) of 239.6 μC/cm{sup 2} and a low coercive field (2E{sub c}) of 615.6 kV/cm are ascribed to the well film texture, the structure transition and the reduced leakage current by the co-doping. Moreover, the structure transition is the dominant factor resulting in the significant enhancement observed in magnetization (M{sub s} ∼ 10.5 emu/cm{sup 3}), owing to the collapse of the space-modulated spin structure. In this contribution, these results demonstrate that the multielement co-doping is in favor of the enhanced multiferroic properties of the BFO films for possible multifunctional applications.

  20. Optimized structure stability and electrochemical performance of LiNi0.8Co0.15Al0.05O2 by sputtering nanoscale ZnO film

    NASA Astrophysics Data System (ADS)

    Lai, Yan-Qing; Xu, Ming; Zhang, Zhi-An; Gao, Chun-Hui; Wang, Peng; Yu, Zi-Yang

    2016-03-01

    LiNi0.8Co0.15Al0.05O2 (NCA) is one of the most promising cathode material for lithium-ion batteries (LIBs) in electric vehicles, which is successfully adopted in Tesla. However, the dissolution of the cation into the electrolyte is still a one of the major challenges (fading capacity and poor cyclability, etc.) presented in pristine NCA. Herein, a homogeneous nanoscale ZnO film is directly sputtered on the surface of NCA electrode via the magnetron sputtering (MS). This ZnO film is evidenced by scanning electron microscopy (SEM), transmission electron microscopy (TEM) and X-ray photoelectron spectroscopy (XPS). The results clearly demonstrate that ZnO film is fully and uniformly covered on the NCA electrodes. After 90 cycles at 1.0C, the optimized MS-2min coated NCA electrode delivers much higher discharge capacity with 169 mAh g-1 than that of the pristine NCA electrode with 127 mAh g-1. In addition, the discharge capacity also reaches 166 mAh g-1 at 3.0C, as compared to that of 125 mAh g-1 for the pristine electrode. The improved electrochemical performance can be ascribed to the superiority of the MS ZnO film that reduce charge transfer resistance and protect the NCA electrode from cation dissolution.

  1. Preparation and properties of sliver and nitrogen co-doped TiO{sub 2} photocatalyst

    SciTech Connect

    Zhang, Ying; Zhang, Jin; Zhu, Zhongqi; Yan, Ningning; Liu, Qingju

    2013-11-15

    Graphical abstract: - Highlights: • The silver and nitrogen co-doped TiO{sub 2} photocatalysts were prepared and characterized. • The light absorption threshold wavelength of Ag–N–TiO{sub 2} is red-shifted to visible light. • The recombination of the photo-generated electrons and holes of Ag–N–TiO{sub 2} is inhibited. • The photocatalytic activity of Ag–N–TiO{sub 2} is remarkable improved. - Abstract: TiO{sub 2} photocatalysts co-doped with different content of Ag and N were prepared by sol–gel method combined with microwave chemical method. The samples were analyzed by X-ray diffraction (XRD), Fourier transform infrared spectroscopy (FT-IR), transmission electron microscope (TEM), ultraviolet–visible diffuse reflectance spectrum (UV–vis) and photo-luminescence emission spectrum (PL). The photocatalytic activity was investigated by photocatalytic degradation of methylene blue (MB) under irradiation of fluorescent lamp. The results indicate that Ag and N co-doping can restrain the increase of grain size, broaden the absorption spectrum to visible light region, and inhibit the recombination of the photo-generated electron–hole pairs. Moreover, the photocatalytic activity of Ag–N–TiO{sub 2} in MB degradation is remarkable improved. The degradation rate of the sample with Ag:TiO{sub 2} = 0.05 at%, N:TiO{sub 2} = 18.50 wt% in 5 h is 93.44%, which is much higher than that of Degussa P25 (39.40%)

  2. Origins of Highly Stable Al-evaporated Solution-processed ZnO Thin Film Transistors: Insights from Low Frequency and Random Telegraph Signal Noise.

    PubMed

    Kim, Joo Hyung; Kang, Tae Sung; Yang, Jung Yup; Hong, Jin Pyo

    2015-01-01

    One long-standing goal in the emerging field of flexible and transparent electronic devices is to meet the demand of key markets, such as enhanced output performance for metal oxide semiconductor thin film transistors (TFTs) prepared by a solution process. While solution-based fabrication techniques are cost-effective and ensure large-area coverage at low temperature, their utilization has the disadvantage of introducing large trap states into TFTs. Such states, the formation of which is induced by intrinsic defects initially produced during preparation, have a significant impact on electrical performance. Therefore, the ability to enhance the electrical characteristics of solution-processed TFTs, along with attaining a firm understanding of their physical nature, remains a key step towards extending their use. In this study, measurements of low-frequency noise and random telegraph signal noise are employed as generic alternative tools to examine the origins of enhanced output performance for solution-processed ZnO TFTs through the control of defect sites by Al evaporation. PMID:26525284

  3. Band alignment at the interface between Ni-doped Cr2O3 and Al-doped ZnO: implications for transparent p-n junctions

    NASA Astrophysics Data System (ADS)

    Arca, Elisabetta; McInerney, Michael A.; Shvets, Igor V.

    2016-06-01

    The realization of transparent electronic and optoelectronic devices requires the use of transparent p-n junctions. In this context, understanding the band alignment at the interface between the p- and n-components represents a fundamental step towards the realization of high performance devices. In this work, the band alignment at the interface between Al-doped ZnO (AZO) and Ni-doped Cr2O3 has been analysed. The formation and evolution of the core levels as the interface progressively forms have been followed by means of x-ray Photoelectron Spectroscopy, x-ray diffraction and x-ray reflectivity. A type two (staggered) band alignment was identified, with the valence band offset and conduction band offset found to be 2.6 eV and 2.5 eV, respectively. The electrical behaviour will be discussed in terms of the position of the bands, the presence of band bending and the expected built-in potential and how these can be engineered in order to achieve the maximum performance for this hetero-structure.

  4. Correlations between 1/f noise and thermal treatment of Al-doped ZnO thin films deposited by direct current sputtering

    SciTech Connect

    Barhoumi, A. Guermazi, S.; Leroy, G.; Gest, J.; Carru, J. C.; Yang, L.; Boughzala, H.; Duponchel, B.

    2014-05-28

    Al-doped ZnO thin films (AZO) have been deposited on amorphous glass substrates by DC sputtering at different substrate temperatures T{sub s}. X-Ray diffraction results reveal that AZO thin films have a hexagonal wurtzite structure with (002) preferred orientation. (002) peaks indicate that the crystalline structure of the films is oriented with c-axis perpendicular to the substrate. Three-dimensional (3D) atomic force microscopy images of AZO thin films deposited on glass substrate at 200 °C, 300 °C, and 400 °C, respectively, shows the improvement of the crystallinity and the homogeneity of AZO thin films with T{sub s} which is in agreement with the noise measurements. The noise was characterized between 1 Hz and 100 kHz and we have obtained 1/f spectra. The noise is very sensitive to the crystal structure especially to the orientation of the crystallites which is perpendicular to the substrate and to the grain boundaries which generate a high current flow and a sharp increase in noise. Through time, R{sub sh} and [αμ]{sub eff} increase with the modification of the crystallinity of AZO thin films. Study of noise aging shows that the noise is more sensitive than resistivity for all AZO thin films.

  5. Correlations between 1/f noise and thermal treatment of Al-doped ZnO thin films deposited by direct current sputtering

    NASA Astrophysics Data System (ADS)

    Barhoumi, A.; Leroy, G.; Yang, L.; Gest, J.; Boughzala, H.; Duponchel, B.; Guermazi, S.; Carru, J. C.

    2014-05-01

    Al-doped ZnO thin films (AZO) have been deposited on amorphous glass substrates by DC sputtering at different substrate temperatures Ts. X-Ray diffraction results reveal that AZO thin films have a hexagonal wurtzite structure with (002) preferred orientation. (002) peaks indicate that the crystalline structure of the films is oriented with c-axis perpendicular to the substrate. Three-dimensional (3D) atomic force microscopy images of AZO thin films deposited on glass substrate at 200 °C, 300 °C, and 400 °C, respectively, shows the improvement of the crystallinity and the homogeneity of AZO thin films with Ts which is in agreement with the noise measurements. The noise was characterized between 1 Hz and 100 kHz and we have obtained 1/f spectra. The noise is very sensitive to the crystal structure especially to the orientation of the crystallites which is perpendicular to the substrate and to the grain boundaries which generate a high current flow and a sharp increase in noise. Through time, Rsh and [αμ]eff increase with the modification of the crystallinity of AZO thin films. Study of noise aging shows that the noise is more sensitive than resistivity for all AZO thin films.

  6. Origins of Highly Stable Al-evaporated Solution-processed ZnO Thin Film Transistors: Insights from Low Frequency and Random Telegraph Signal Noise

    PubMed Central

    Kim, Joo Hyung; Kang, Tae Sung; Yang, Jung Yup; Hong, Jin Pyo

    2015-01-01

    One long-standing goal in the emerging field of flexible and transparent electronic devices is to meet the demand of key markets, such as enhanced output performance for metal oxide semiconductor thin film transistors (TFTs) prepared by a solution process. While solution-based fabrication techniques are cost-effective and ensure large-area coverage at low temperature, their utilization has the disadvantage of introducing large trap states into TFTs. Such states, the formation of which is induced by intrinsic defects initially produced during preparation, have a significant impact on electrical performance. Therefore, the ability to enhance the electrical characteristics of solution-processed TFTs, along with attaining a firm understanding of their physical nature, remains a key step towards extending their use. In this study, measurements of low-frequency noise and random telegraph signal noise are employed as generic alternative tools to examine the origins of enhanced output performance for solution-processed ZnO TFTs through the control of defect sites by Al evaporation. PMID:26525284

  7. Band alignment at the interface between Ni-doped Cr2O3 and Al-doped ZnO: implications for transparent p-n junctions.

    PubMed

    Arca, Elisabetta; McInerney, Michael A; Shvets, Igor V

    2016-06-01

    The realization of transparent electronic and optoelectronic devices requires the use of transparent p-n junctions. In this context, understanding the band alignment at the interface between the p- and n-components represents a fundamental step towards the realization of high performance devices. In this work, the band alignment at the interface between Al-doped ZnO (AZO) and Ni-doped Cr2O3 has been analysed. The formation and evolution of the core levels as the interface progressively forms have been followed by means of x-ray Photoelectron Spectroscopy, x-ray diffraction and x-ray reflectivity. A type two (staggered) band alignment was identified, with the valence band offset and conduction band offset found to be 2.6 eV and 2.5 eV, respectively. The electrical behaviour will be discussed in terms of the position of the bands, the presence of band bending and the expected built-in potential and how these can be engineered in order to achieve the maximum performance for this hetero-structure. PMID:26952763

  8. Transparent conducting Al-doped ZnO thin films prepared by magnetron sputtering with dc and rf powers applied in combination

    SciTech Connect

    Minami, Tadatsugu; Ohtani, Yuusuke; Miyata, Toshihiro; Kuboi, Takeshi

    2007-07-15

    A newly developed Al-doped ZnO (AZO) thin-film magnetron-sputtering deposition technique that decreases resistivity, improves resistivity distribution, and produces high-rate depositions has been demonstrated by dc magnetron-sputtering depositions that incorporate rf power (dc+rf-MS), either with or without the introduction of H{sub 2} gas into the deposition chamber. The dc+rf-MS preparations were carried out in a pure Ar or an Ar+H{sub 2} (0%-2%) gas atmosphere at a pressure of 0.4 Pa by adding a rf component (13.56 MHz) to a constant dc power of 80 W. The deposition rate in a dc+rf-MS deposition incorporating a rf power of 150 W was approximately 62 nm/min, an increase from the approximately 35 nm/min observed in dc magnetron sputtering with a dc power of 80 W. A resistivity as low as 3x10{sup -4} {omega} cm and an improved resistivity distribution could be obtained in AZO thin films deposited on substrates at a low temperature of 150 deg. C by dc+rf-MS with the introduction of hydrogen gas with a content of 1.5%. This article describes the effects of adding a rf power component (i.e., dc+rf-MS deposition) as well as introducing H{sub 2} gas into dc magnetron-sputtering preparations of transparent conducting AZO thin films.

  9. In situ spectroscopic ellipsometry growth studies on the Al-doped ZnO films deposited by remote plasma-enhanced metalorganic chemical vapor deposition

    SciTech Connect

    Volintiru, I.; Creatore, M.; Sanden, M. C. M. van de

    2008-02-01

    In situ spectroscopic ellipsometry (SE) was applied to study the pyramidlike and pillarlike growth of Al doped ZnO (AZO) films deposited by means of remote plasma-enhanced metalorganic chemical vapor deposition for transparent conductive oxide applications. Real time SE studies in the visible region allowed discerning between the two growth modes by addressing the time evolution of the bulk and surface roughness layer thickness. While the pillarlike mode is characterized by a constant growth rate, a slower rate in the initial stage (up to 150-200 nm film thickness), compared to the bulk, is observed for the growth of pyramidlike AZO films. The two modes differ also in terms of surface roughness development: a saturation behavior is observed for film thickness above 150-200 nm in the case of the pyramidlike films, while a slow linear increase with film thickness characterizes the pillarlike mode. By extending the SE analysis of the AZO films to the near infrared region, valuable information about the in grain properties could be extracted: excellent in grain mobility values, i.e., larger than 100 and 50 cm{sup 2}/V s, are determined for the pyramidlike and pillarlike AZO layers, respectively. The comparison between the outcome of the in situ real time SE studies and the ex situ electrical and chemical characterization highlights the limitations in the electron transport occurring in both types of films and allows one to address routes toward further improvement in AZO conductivity.

  10. Superior electrochemical performance of LiCoO2 electrodes enabled by conductive Al2O3-doped ZnO coating via magnetron sputtering

    NASA Astrophysics Data System (ADS)

    Dai, Xinyi; Zhou, Aijun; Xu, Jin; Yang, Bin; Wang, Liping; Li, Jingze

    2015-12-01

    A conductive Al2O3-doped ZnO (AZO) layer is coated directly on the LiCoO2 (LCO) porous composite electrode by magnetron sputtering of an AZO target, offering more efficient electron transfer and a stabilized interface layer. Up to 90% of the initial capacity of the AZO-coated electrode can be retained (173 mAh g-1) after 150 cycles between 3.0 and 4.5 V vs. Li/Li+. Meanwhile, the rate performance is remarkably improved showing a reversible capacity of 112 mAh g-1 at 12 C. The formation of amorphous solid electrolyte interface (SEI) observed on the uncoated LCO electrode is effectively impeded on the AZO-coated one. Acting as an intermediate barrier, the AZO layer can prevent chemical dissolution of the active materials by forming a thin passivation layer on the electrode surface containing some metal fluorides which are chemically inactive and ionically conductive. The positive role of the AZO coating is still effective under a more severe condition tested with an upper cut-off potential of 4.7 V.

  11. Origins of Highly Stable Al-evaporated Solution-processed ZnO Thin Film Transistors: Insights from Low Frequency and Random Telegraph Signal Noise

    NASA Astrophysics Data System (ADS)

    Kim, Joo Hyung; Kang, Tae Sung; Yang, Jung Yup; Hong, Jin Pyo

    2015-11-01

    One long-standing goal in the emerging field of flexible and transparent electronic devices is to meet the demand of key markets, such as enhanced output performance for metal oxide semiconductor thin film transistors (TFTs) prepared by a solution process. While solution-based fabrication techniques are cost-effective and ensure large-area coverage at low temperature, their utilization has the disadvantage of introducing large trap states into TFTs. Such states, the formation of which is induced by intrinsic defects initially produced during preparation, have a significant impact on electrical performance. Therefore, the ability to enhance the electrical characteristics of solution-processed TFTs, along with attaining a firm understanding of their physical nature, remains a key step towards extending their use. In this study, measurements of low-frequency noise and random telegraph signal noise are employed as generic alternative tools to examine the origins of enhanced output performance for solution-processed ZnO TFTs through the control of defect sites by Al evaporation.

  12. Luminescence studies of rare-earth doped and Co-doped hydroxyapatite

    NASA Astrophysics Data System (ADS)

    Vasugi, G.; Thamizhavel, A.; Girija, E. K.

    2012-06-01

    Rare-earth doped and co-doped hydroxyapatite (Eu: HA, Eu-Y: HA) were prepared by wet precipitation method by using CTAB as the organic modifier. The synthesized samples were characterized by X-ray diffraction (XRD), Fourier transform infrared spectroscopy (FTIR), Scanning electron microscopy (SEM) and Photoluminescence spectra (PL). Upon excitation at 350 nm the samples Eu: HA and Eu-Y: HA shows the emission band in the visible region, which makes it suitable for potential application such as bio-imaging.

  13. Ferromagnetism in Co-doped (La,Sr)TiO3

    SciTech Connect

    Fix, T.; Liberati, M.; Aubriet, H.; Sahonta, S.-L.; Bali, R.; Becker, C.; Ruch, D.; MacManus-Driscoll, J.L.; Arenholz, E.; Blamire, M.G.

    2009-04-21

    The origin of ferromagnetism in Co-doped (La,Sr)TiO{sub 3} epitaxial thin films is discussed. While the as-grown samples are not ferromagnetic at room temperature or at 10 K, ferromagnetism at room temperature appears after annealing the films in reducing conditions and disappears after annealing in oxidizing conditions. Magnetic measurements, x-ray absorption spectroscopy, x-ray photoemission spectroscopy and transmission electron microscopy experiments indicate that within the resolution of the instruments the activation of the ferromagnetism is not due to the presence of pure Co.

  14. Nitrogen and sulfur co-doped carbon dots with strong blue luminescence

    NASA Astrophysics Data System (ADS)

    Ding, Hui; Wei, Ji-Shi; Xiong, Huan-Ming

    2014-10-01

    Sulfur-doped carbon dots (S-CDs) with a quantum yield (QY) of 5.5% and nitrogen, sulfur co-doped carbon dots (N,S-CDs) with a QY of 54.4% were synthesized, respectively, via the same hydrothermal route using α-lipoic acid as the carbon source. The obtained S-CDs and N,S-CDs had similar sizes but different optical features. The QY of N,S-CDs was gradually enhanced when extending the reaction time to increase the nitrogen content. After careful characterization of these CDs, the doped nitrogen element was believed to be in the form of C&z.dbd;N and C-N bonds which enhanced the fluorescence efficiency significantly. Meanwhile, the co-doped sulfur element was found to be synergistic for nitrogen doping in N,S-CDs. The optimal N,S-CDs were successfully employed as good multicolor cell imaging probes due to their fine dispersion in water, excitation-dependent emission, excellent fluorescence stability and low toxicity. Besides, such N,S-CDs showed a wide detection range and excellent accuracy as fluorescent sensors for Fe3+ ions.Sulfur-doped carbon dots (S-CDs) with a quantum yield (QY) of 5.5% and nitrogen, sulfur co-doped carbon dots (N,S-CDs) with a QY of 54.4% were synthesized, respectively, via the same hydrothermal route using α-lipoic acid as the carbon source. The obtained S-CDs and N,S-CDs had similar sizes but different optical features. The QY of N,S-CDs was gradually enhanced when extending the reaction time to increase the nitrogen content. After careful characterization of these CDs, the doped nitrogen element was believed to be in the form of C&z.dbd;N and C-N bonds which enhanced the fluorescence efficiency significantly. Meanwhile, the co-doped sulfur element was found to be synergistic for nitrogen doping in N,S-CDs. The optimal N,S-CDs were successfully employed as good multicolor cell imaging probes due to their fine dispersion in water, excitation-dependent emission, excellent fluorescence stability and low toxicity. Besides, such N,S-CDs showed a

  15. Preparation of hybrid Josephson junctions on Co-doped Ba-122 single crystals

    NASA Astrophysics Data System (ADS)

    Reifert, D.; Hasan, N.; Döring, S.; Schmidt, S.; Monecke, M.; Feltz, M.; Schmidl, F.; Tympel, V.; Wisniewski, W.; Mönch, I.; Wolf, T.; Seidel, P.

    2014-08-01

    In this paper we present a method for processing a hybrid Josephson junction on Co-doped BaF{{e}_{2}}A{{s}_{2}} (Ba-122) single crystals with a thin film Pb-counter electrode and a barrier layer of Ti{{O}_{x}}. This includes the leveling and polishing of the crystals and structuring them with thin film techniques such as photo lithography, sputtering and ion beam etching. The junctions show hysteretical resistively and capacitively shunted junction-like I-V characteristics with an {{I}_{c}}{{R}_{n}}-product of about 800 \\mu V.

  16. Co-doping effects of Gd and Ag on YBCO films derived by metalorganic deposition

    NASA Astrophysics Data System (ADS)

    Sun, Meijuan; Liu, Zhiyong; Bai, Chuanyi; Guo, Yanqun; Lu, Yuming; Fan, Feng; Cai, Chuanbing

    2015-12-01

    Y1-xGdxBa2Cu3O7-δ-Ag (x = 0, 0.25, 0.5, 0.75, 1) thin films were prepared on oxide buffered Hastelloy substrates by low fluorine metalorganic depostion (MOD) process. The effects of co-doping of Ag and Gd on the microstructures and superconducting properties of YBCO thin films are investigated with respect to improvement on texture and superconducting performance in case of optimized doping content. It is found that optimum addition of Ag and Gd may lead to better c-axis orientation, superior surface microstructure and finally give rise to much improvement of superconducting performance.

  17. Influence of praseodymium and nitrogen co-doping on the photocatalytic activity of TiO{sub 2}

    SciTech Connect

    Wu, Jing; Liu, Qingju; Gao, Pan; Zhu, Zhongqi

    2011-11-15

    Highlights: {yields} The praseodymium and nitrogen co-doped TiO{sub 2} (Pr-N-TiO{sub 2}) powders were prepared and characterized. {yields} The effects on the photocatalytic activity were studied. {yields} The results exhibit that the spectrum absorption region of the co-doped sample is red-shifted to visible light and the recombination of the photo-generated pairs is inhibited. {yields} The photocatalytic activity is greatly improved. -- Abstract: TiO{sub 2} nanoparticles co-doped with different doping concentration of Pr and N were prepared by sol-gel method combined with microwave chemical method. The samples were characterized by XRD, FT-IR, UV-vis, TEM, XPS, PL, and the photocatalytic activity were investigated by photocatalytic degradation of methylene blue (MB). The results indicate that Pr and N ions incorporate into the lattice of TiO{sub 2}, co-doping restrains the increase of grain size, broadens the absorption region to visible light, and inhibits the recombination of the photo-generated electrons and holes. Moreover, the photocatalytic activity of Pr-N-TiO{sub 2} is remarkable improved due to the synergistic effect of the co-doped ions. The degradation rate of MB in 6 h is 92.81%, which is much higher than that of Degussa P25 (45.01%).

  18. RAPID COMMUNICATION: DC superconducting quantum interference devices fabricated using bicrystal grain boundary junctions in Co-doped BaFe2As2 epitaxial films

    NASA Astrophysics Data System (ADS)

    Katase, Takayoshi; Ishimaru, Yoshihiro; Tsukamoto, Akira; Hiramatsu, Hidenori; Kamiya, Toshio; Tanabe, Keiichi; Hosono, Hideo

    2010-08-01

    DC superconducting quantum interference devices (dc-SQUIDs) were fabricated in Co-doped BaFe2As2 epitaxial films on (La, Sr)(Al, Ta)O3 bicrystal substrates with 30° misorientation angles. The 18 × 8 µm2 SQUID loop with an estimated inductance of 13 pH contained two 3 µm wide grain boundary junctions. The voltage-flux characteristics clearly exhibited periodic modulations with ΔV = 1.4 µV at 14 K, while the intrinsic flux noise of dc-SQUIDs was 7.8 × 10 - 5 Φ0 Hz - 1/2 above 20 Hz. The rather high flux noise is mainly attributed to the small voltage modulation depth which results from the superconductor-normal-metal-superconductor junction nature of the bicrystal grain boundary.

  19. Comparison of selected optical properties of oxyfluoride glass fibers doped with Er3+ and co-doped with Er3+ Yb3+

    NASA Astrophysics Data System (ADS)

    Augustyn, E.; Stremplewski, P.; Rozanski, M.; Koepke, C.; Dominiak-Dzik, G.; Kępińska, M.; Żelechower, M.

    2011-12-01

    The method of manufacturing and spectroscopic evaluation of the Er3+ ions doped and Er3+-Yb3+co-doped SiO2-Al2O3-Na2CO3-CaO-PbO-PbF2 oxyfluoride glass fibers is presented in the paper. Both optically active elements erbium and ytterbium were introduced into the batch in the form of fluorides. The X-ray diffraction (XRD) technique was applied at each stage of fibers manufacturing in order to control an amorphous structure of the preforms and fibers. Optical studies of glass preforms and fibers (reflection/transmission, absorption, emission, and excited state absorption (ESA)) were directed to examine their suitability as fiber amplifiers at 1.55 μm band.

  20. K and Mn co-doped BaCd2As2: A hexagonal structured bulk diluted magnetic semiconductor with large magnetoresistance

    NASA Astrophysics Data System (ADS)

    Yang, Xiaojun; Li, Yuke; Zhang, Pan; Jiang, Hao; Luo, Yongkang; Chen, Qian; Feng, Chunmu; Cao, Chao; Dai, Jianhui; Tao, Qian; Cao, Guanghan; Xu, Zhu-An

    2013-12-01

    A bulk diluted magnetic semiconductor was found in the K and Mn co-doped BaCd2As2 system. Different from recently reported tetragonal ThCr2Si2-structured II-II-V based (Ba,K)(Zn,Mn)2As2, the Ba1-yKyCd2-xMnxAs2 system has a hexagonal CaAl2Si2-type structure with the Cd2As2 layer forming a honeycomb-like network. The Mn concentration reaches up to x ˜ 0.4. Magnetization measurements show that the samples undergo ferromagnetic transitions with Curie temperature up to 16 K. With low coercive field of less than 10 Oe and large magnetoresistance of about -70%, the hexagonal structured Ba1-yKyCd2-xMnxAs2 can be served as a promising candidate for spin manipulations.

  1. Structural and optical properties of Y, Cu co-doped ZnO nanoparticles by sol-gel method

    NASA Astrophysics Data System (ADS)

    Anandan, S.; Muthukumaran, S.; Ashokkumar, M.

    2014-10-01

    Zn.96-xY.04CuxO (x = 0, 0.05, 0.10 and 0.15) nanoparticles were successfully synthesized employing simple sol-gel method. Hexagonal wurtzite structure of the synthesized samples was not affected by Cu-doping. CuO phase was induced after Cu = 5% and it was increased by Cu-doping. The change in crystal size was discussed based on compressive stress, lattice volume and bond length. The chemical stoichiometry of Zn, Cu, Y and O was confirmed by energy dispersive X-ray spectra. The increased oxygen percentage from 57.88 (Cu = 5%) to 64.53% (Cu = 15%) by Cu-doping proved the existence of CuO and oxygen rich phase. The lower absorption and high transmittance in visible region observed at Cu = 5% described the good optical quality of the sample with low scattering or absorption losses which leads to the industrial applications especially as transparent electrode. The high energy gap at Cu = 5% could be attributed to the poor crystallinity of the sample. The red shift in energy gap after Cu = 5% was explained by the p-d spin-exchange interactions between the band electrons and the localized d electrons of Cu2+ ions. The change in intensity and peak position of infrared (IR) peaks confirmed the presence of Cu in Znsbnd Ysbnd O lattice and also expressed the perturbation generated by Cu in Znsbnd Ysbnd O lattice.

  2. Oxygen vacancies induced Spin polarized current in Co-doped ZnO by Andreev reflection technique

    NASA Astrophysics Data System (ADS)

    Yang, Kung-Shang; Chou, Hsiung; Chan, Wen Ling; Chen, Bo-Yu; Shang-Fan Lee Collaboration

    Dilute magnetic semiconductor (DMO) is a semiconducting system with spin-polarized carriers and magnetic properties. However, since most studies had been focused on existence of FM, the proportion of spin-polarized current (SPC) in DMO is far from being determined. We used Point-contact Andreev reflection measurements on various Zn0.95Co0.05O thin films, with controlled oxygen vacancies by sputtering in various H2 partial pressure with Ar atmosphere. We found that conductance versus voltage (G-V) spectra suppresses as oxygen vacancy concentration increases. It indicates oxygen vacancies play significant role in inducing the SPC. To understand the origin of spin polarized current at the interface of the superconducting tip/CZO system, we use modified Blonder-Tinkham-Klapwijk (MBTK) model in ballistic and diffusive regime to interpret GV curve. The extracted SPC value were up to 70% in ballistic regime and 65% in diffusive regime. The results suggest tiny routes have been formed by oxygen vacancies which are extended throughout the whole films. This result confirmed that MBTK model in ballistic regime is more suitable for our GV spectra and this explains the observation of such a high SPC Institute of Physics, Academia Sinica Taiwan.

  3. Synthesis of boron, nitrogen co-doped porous carbon from asphaltene for high-performance supercapacitors

    NASA Astrophysics Data System (ADS)

    Zhou, Ying; Wang, Dao-Long; Wang, Chun-Lei; Jin, Xin-Xin; Qiu, Jie-Shan

    2014-08-01

    Oxidized asphaltene (OA), a thermosetting material with plenty of functional groups, is synthesized from asphaltene (A) using HNO3/H2SO4 as the oxidizing agent. Boron, nitrogen co-doped porous carbon (BNC—OA) is prepared by carbonization of the mixture of boric acid and OA at 1173 K in an argon atmosphere. X-ray photoelectron spectroscopy (XPS) characterization reveals that the BNC—OA has a nitrogen content of 3.26 at.% and a boron content of 1.31 at.%, while its oxidation-free counterpart (BNC—SA) has a nitrogen content of 1.61 at.% and a boron content of 3.02 at.%. The specific surface area and total pore volume of BNC—OA are 1103 m2·g-1 and 0.921 cm3·g-1, respectively. At a current density of 0.1 A·g-1, the specific capacitance of BNC-OA is 335 F·g-1 and the capacitance retention can still reach 83% at 1 A·g-1. The analysis shows that the superior electrochemical performance of the BNC—OA is attributed to the pseudocapacitance behavior of surface heteroatom functional groups and an abundant pore-structure. Boron, nitrogen co-doped porous carbon is a promising electrode material for supercapacitors.

  4. ND laser with co-doped ion(s) pumped by visible laser diodes

    NASA Astrophysics Data System (ADS)

    Scheps, Richard

    1993-04-01

    The 1.06 microns Nd transition in a co-doped Cr,Nd:Gd3Sc2Ga3O12 (Cr,Nd:GSGG) gain element is obtained by diode pumping Cr(3+) at 670 run and produces efficient, low threshold laser operation. Although co-doped Cr,Nd:GSGG was developed for more efficient flashlamp pumping, it has the desirable property of having an extraordinarily broad absorption to allow for efficient diode pumping relative to the ND:YAG laser. The consequent broad bandwidth tolerance of the Cr,Nd:GSGG for the diode pumping radiation allows diode pumping of the 1.06 microns transition without regard to the wavelength of the visible diodes which has the potential for reducing the cost of the semiconductor pump and also demonstrates the extended versatility of these diodes which previously had been restricted to pump the Cr(3+) tunable vibronic lasers. CW and long pulse diode pumping provided pump power levels as high as 300 mW CW and 1 W pulsed. The lowest threshold power was measured at 938 micron W and the highest output power was obtained at 43 mW CW and 173 mW pulsed. The best slope efficiency obtained was 42.1%, 78% of the theoretical maximum. Loss measurements indicate a value of 0.4%/cm.

  5. Enhanced stability of Eu in GaN nanoparticles: Effects of Si co-doping

    NASA Astrophysics Data System (ADS)

    Kaur, Prabhsharan; Sekhon, S. S.; Zavada, J. M.; Kumar, Vijay

    2015-06-01

    Ab initio calculations on Eu doped (GaN)n (n = 12, 13, and 32) nanoparticles show that Eu doping in nanoparticles is favorable compared with bulk GaN as a large fraction of atoms lie on the surface where strain can be released compared with bulk where often Eu doping is associated with a N vacancy. Co-doping of Si further facilitates Eu doping as strain from an oversized Eu atom and an undersized Si atom is compensated. These results along with low symmetry sites in nanoparticles make them attractive for developing strongly luminescent nanomaterials. The atomic and electronic structures are discussed using generalized gradient approximation (GGA) for the exchange-correlation energy as well as GGA + U formalism. In all cases of Eu (Eu + Si) doping, the magnetic moments are localized on the Eu site with a large value of 6μB (7μB). Our results suggest that co-doping can be a very useful way to achieve rare-earth doping in different hosts for optoelectronic materials.

  6. White luminescence of Tm-Dy ions co-doped aluminoborosilicate glasses under UV light excitation

    SciTech Connect

    Liu Shimin; Zhao Gaoling; Lin Xiaohua; Ying Hao; Liu Junbo; Wang Jianxun; Han Gaorong

    2008-10-15

    Tm{sup 3+} and Dy{sup 3+} ions co-doped aluminoborosilicate glasses were prepared in this study. The luminescence properties of the glasses were analyzed. A combination of blue, green, yellow, and red emission bands was shown for these glasses, and white light emission could be observed under UV light excitation. White light luminescence color could be changed by varying the excitation wavelength. Concentration quenching effect was investigated in this paper. Furthermore, the dependence of luminescence properties on glass compositions was studied. Results showed that the luminescence intensity changed with different network modifier oxides, while the white color luminescence was not affected significantly. - Graphical abstract: Tm{sup 3+} and Dy{sup 3+} ions co-doped aluminoborosilicate glasses, which emit white light under UV light excitation, were prepared. The dependence of luminescence properties on glass compositions was studied, and results showed that the white color luminescence was not affected significantly with different network modifier oxides. This adjustability could broaden application areas.

  7. Thermoelectric performance of co-doped SnTe with resonant levels

    NASA Astrophysics Data System (ADS)

    Zhou, Min; Gibbs, Zachary M.; Wang, Heng; Han, Yemao; Li, Laifeng; Snyder, G. Jeffrey

    2016-07-01

    Some group III elements such as Indium are known to produce the resonant impurity states in IV-VI compounds. The discovery of these impurity states has opened up new ways for engineering the thermoelectric properties of IV-VI compounds. In this work, resonant states in SnTe were studied by co-doping with both resonant (In) and extrinsic (Ag, I) dopants. A characteristic nonlinear relationship was observed between the Hall carrier concentration (nH) and extrinsic dopant concentration (NI, NAg) in the stabilization region, where a linear increase of dopant concentration does not lead to linear response in the measured nH. Upon substituting extrinsic dopants beyond a certain amount, the nH changed proportionally with additional dopants (Ag, I) (the doping region). The Seebeck coefficients are enhanced as the resonant impurity is introduced, whereas the use of extrinsic doping only induces minor changes. Modest zT enhancements are observed at lower temperatures, which lead to an increase in the average zT values over a broad range of temperatures (300-773 K). The improved average zT obtained through co-doping indicates the promise of fine carrier density control in maximizing the favorable effect of resonant levels for thermoelectric materials.

  8. Enhanced stability of Eu in GaN nanoparticles: Effects of Si co-doping

    SciTech Connect

    Kaur, Prabhsharan; Sekhon, S. S.; Zavada, J. M.; Kumar, Vijay

    2015-06-14

    Ab initio calculations on Eu doped (GaN){sub n} (n = 12, 13, and 32) nanoparticles show that Eu doping in nanoparticles is favorable compared with bulk GaN as a large fraction of atoms lie on the surface where strain can be released compared with bulk where often Eu doping is associated with a N vacancy. Co-doping of Si further facilitates Eu doping as strain from an oversized Eu atom and an undersized Si atom is compensated. These results along with low symmetry sites in nanoparticles make them attractive for developing strongly luminescent nanomaterials. The atomic and electronic structures are discussed using generalized gradient approximation (GGA) for the exchange-correlation energy as well as GGA + U formalism. In all cases of Eu (Eu + Si) doping, the magnetic moments are localized on the Eu site with a large value of 6μ{sub B} (7μ{sub B}). Our results suggest that co-doping can be a very useful way to achieve rare-earth doping in different hosts for optoelectronic materials.

  9. Colossal Dielectric Behavior of Ga+Nb Co-Doped Rutile TiO2.

    PubMed

    Dong, Wen; Hu, Wanbiao; Berlie, Adam; Lau, Kenny; Chen, Hua; Withers, Ray L; Liu, Yun

    2015-11-18

    Stimulated by the excellent colossal permittivity (CP) behavior achieved in In+Nb co-doped rutile TiO2, in this work we investigate the CP behavior of Ga and Nb co-doped rutile TiO2, i.e., (Ga(0.5)Nb(0.5))(x)Ti(1-x)O2, where Ga(3+) is from the same group as In(3+) but with a much smaller ionic radius. Colossal permittivity of up to 10(4)-10(5) with an acceptably low dielectric loss (tan δ = 0.05-0.1) over broad frequency/temperature ranges is obtained at x = 0.5% after systematic synthesis optimizations. Systematic structural, defect, and dielectric characterizations suggest that multiple polarization mechanisms exist in this system: defect dipoles at low temperature (∼10-40 K), polaronlike electron hopping/transport at higher temperatures, and a surface barrier layer capacitor effect. Together these mechanisms contribute to the overall dielectric properties, especially apparent observed CP. We believe that this work provides comprehensive guidance for the design of new CP materials. PMID:26512874

  10. Spectroscopic properties of bismuth-germanate glasses co-doped with erbium and holmium ions

    NASA Astrophysics Data System (ADS)

    Ragin, Tomasz; Kochanowicz, Marcin; Żmojda, Jacek; Dorosz, Dominik

    2014-05-01

    In the article an analysis of thermal and spectroscopic properties of heavy metal oxide glasses from the Bi2O3-Ga2O3- Na2O-Ge2O3 system doped with rare earth elements were presented. It has been focused on the elaboration of the glass composition in terms of low phonon energy, high transparency in the range of infrared region and high thermal stability (ΔT=160 °C) required in optical fiber technology. Fabricated glasses co-doped with Er3+/Ho3+ions under 980 nm laser diode excitation exhibit emission at 1.55 μm (Er3+: 4I 13/2 → 4I15/2) and 2.0 μm (Ho3+: 4I7 → 5I8). The emission at 2.0 μm results from the Er3+ → Ho3+energy transfer. Taking into account great thermal stability and good optical properties such as high transparency (up to 80%) or high refractive index (2.23), the fabricated bismuth-germanate glass co-doped with Er3+/Ho3+ is promising material for construction of active optical fibers operating in the range of mid-infrared.

  11. The effect of K-na co-doping on the formation and particle size of Bi-2212 phase

    NASA Astrophysics Data System (ADS)

    Kır, M. Ebru; Özkurt, Berdan; Aytekin, M. Ersin

    2016-06-01

    Superconducting K-Na co-doped Bi2Sr2KxCa1Cu1.75Na0.25Oy (x=0, 0.05, 0.1 and 0.25) ceramics are prepared by a solid-state reaction method. It is clearly determined from XRD data that the characteristic peaks of Bi-2212 phase are observed in all samples. The resistivity measurements show that Tc (onset) values is gradually increasing as K content is increased. It is also found that K-Na co-doping influence the grain sizes for Bi-2212 phase significantly. The critical current densities as a function of magnetic field have been calculated from M-H hysteresis loops of samples according to Bean's critical model, indicating that K-Na co-doping cause higher Jc values than the pure ones.

  12. W/Mo co-doped BiVO4 for photocatalytic treatment of polymer-containing wastewater in oilfield

    NASA Astrophysics Data System (ADS)

    Zhou, Ying; Li, Wei; Wan, Wenchao; Zhang, Ruiyang; Lin, Yuanhua

    2015-06-01

    Polymer flooding is an effective way to enhance oil recovery (EOR). However, the treatment of the oily wastewater becomes an urgent issue. Photocatalysis is a promising approach for this purpose. In this report, W/Mo co-doped BiVO4 particles are synthesized by hydrothermal method. W/Mo co-doping could promote an effective separation of photogenerated carriers reflecting from the 6 times higher photocurrent density compared to pure BiVO4. The photodegradation of partially hydrolyzed polyacrylamide (HPAM) over 0.5 at.% W and 1.5 at.% Mo co-doped BiVO4 is 43% under UV-vis light irradiation for 3 h, which is much higher than that of pure BiVO4 (18%).

  13. Thermochromic properties of Sn, W co-doped VO2 nanostructured thin film deposited by pulsed laser deposition.

    PubMed

    Hur, M G; Masaki, T; Yoon, D H

    2014-12-01

    Tin (Sn) and tungsten (W) co-doped vanadium dioxide (VO2) nanostructured thin films with 50-nm thickness were deposited by pulsed laser deposition (PLD) to reduce the transition temperature and improve the IR transmittance. The crystal structure of the nanostructured thin films and the presence of elements were evaluated by XRD and XPS analysis. The transition temperature (T(c)) of 1 at% Sn-1 at% W co-doped VO2 nanostructured thin film was decreased to about 22 degrees C (from 70.3 to 48.5 degrees C) compared with the undoped VO2 nanostructured thin film. The transmittance width in the IR range of the co-doped nanostructured thin film decreased from 37.5% to 27% compared with the undoped VO2 nanostructured thin film. Also, the width of hysteresis was narrowed by Sn doping. PMID:25970986

  14. Temperature dependence of microstructure and strain evolution in strained ZnO films on Al2O3(0001)

    NASA Astrophysics Data System (ADS)

    Kim, In-Woo; Lee, Kyu-Mann

    2008-09-01

    We have studied the temperature dependence of the growth mode and microstructure evolution in highly mismatched sputter-grown ZnO/Al2O3(0001) heteroepitaxial films. The growth mode was studied by real-time synchrotron x-ray scattering. We find that the growth mode changes from a two-dimensional (2D) layer to a 3D island in the early growth stage with temperature (300-600 °C), in sharp contrast to the reported transition from three dimensions to two dimensions in metal-organic vapor phase epitaxy. At around 400 °C intermediate 2D platelets nucleate in the early stage, which act as nucleation cores of 3D islands and transform to a misaligned state during further growth. Meanwhile, at high temperature (above 500 °C), the spinel structure of ZnAl2O4 grows in the early stage, and it undergoes a transition to wurtzite-ZnO (w-ZnO) with thickness. The spinel formation is presumably driven by high temperature and large incident energy of impacting atoms during sputtering. The results of the strain evolution as functions of temperature and thickness during growth suggest that the surface diffusion is a major factor determining the microstructural properties in the strained ZnO/Al2O3(0001) heteroepitaxy.

  15. Influence of Li-doping on structural characteristics and photocatalytic activity of ZnO nano-powder formed in a novel solution pyro-hydrolysis route

    NASA Astrophysics Data System (ADS)

    Ganesh, Ibram; Sekhar, P. S. Chandra; Padmanabham, G.; Sundararajan, G.

    2012-10-01

    Different types of Li-doped ZnO (LDZ) (Li = 0-10 wt.%) powders were prepared by following a novel pyro-hydrolysis route at 450 °C, and were thoroughly characterized by means of thermo-gravimetry (TG), differential scanning calorimetry (DSC), X-ray diffraction (XRD), scanning electron microscopy (SEM), transmission electron microscopy (TEM), Fourier-transform infrared (FT-IR), Fourier-transform Raman (FT-Raman) spectroscopy, diffuse reflectance spectroscopy (DRS), ultra-violet visible (UV-Vis) spectroscopy, Brunauer-Emmett-Teller (BET) surface area (SA), and zeta potential (ζ) measurements. Photocatalytic activity of these powders was evaluated by means of methylene blue (MB) degradation experiments conducted under the irradiation of simulated and natural solar light. Characterization results suggest that both pure ZnO and LDZ powders are quite thermally stable up to a temperature of 700 °C and possess band gap (BG) energies in the range of 3.16-3.2 eV with a direct band to band transition and ζ values of -31.6 mV to -56.4 mV. The properties exhibited by LDZ powders were found to be quite comparable to those exhibited by p-type semi-conducting LDZ powders. In order to study the kinetics of MB degradation reaction under the irradiation of simulated solar light, the Li (0.2-10 wt.%) and Al (0.5 wt.%) co-doped ZnO (0.2LADZ to 10LADZ) powders were also synthesized and employed for this purpose. The photocatalytic degradation of MB over LADZ catalysts followed the Langmuir-Hinshelwood (L-H) first order reaction rate relationship. The 10LDZ catalyst exhibited highest photocatalytic activity among various powders investigated in this study.

  16. Non-polar a-plane ZnO films grown on r-Al2O3 substrates using GaN buffer layers

    NASA Astrophysics Data System (ADS)

    Xu, C. X.; Chen, W.; Pan, X. H.; Chen, S. S.; Ye, Z. Z.; Huang, J. Y.

    2016-09-01

    In this work, GaN buffer layer has been used to grow non-polar a-plane ZnO films by laser-assisted and plasma-assisted molecular beam epitaxy. The thickness of GaN buffer layer ranges from ∼3 to 12 nm. The GaN buffer thickness effect on the properties of a-plane ZnO thin films is carefully investigated. The results show that the surface morphology, crystal quality and optical properties of a-plane ZnO films are strongly correlated with the thickness of GaN buffer layer. It was found that with 6 nm GaN buffer layer, a-plane ZnO films display the best crystal quality with X-ray diffraction rocking curve full-width at half-maximum of only 161 arcsec for the (101) reflection.

  17. Lattice relaxation mechanism of ZnO thin films grown on c-Al{sub 2}O{sub 3} substrates by plasma-assisted molecular-beam epitaxy

    SciTech Connect

    Park, S. H.; Hanada, T.; Oh, D. C.; Minegishi, T.; Goto, H.; Fujimoto, G.; Park, J. S.; Im, I. H.; Chang, J. H.; Cho, M. W.; Yao, T.; Inaba, K.

    2007-12-03

    We report on the lattice relaxation mechanism of ZnO films grown on c-Al{sub 2}O{sub 3} substrates by plasma-assisted molecular-beam epitaxy. The lattice relaxation of ZnO films with various thicknesses up to 2000 nm is investigated by using both in situ time-resolved reflection high energy electron diffraction observation during the initial growth and absolute lattice constant measurements (Bond method) for grown films. The residual strain in the films is explained in terms of lattice misfit relaxation (compression) at the growth temperature and thermal stress (tension) due to the difference of growth and measurement temperatures. In thick films (>1 {mu}m), the residual tensile strain begins to relax by bending and microcrack formation.

  18. Er/Yb co-doped oxy-fluoride glass-ceramics core/polymer cladding optical fibers

    NASA Astrophysics Data System (ADS)

    Czerska, E.; Świderska, M.

    2014-11-01

    Erbium/ytterbium co-doped glasses can be applied as NIR laser sources (1.55 μm) or optical amplifiers in this range. About hundred meters of Er/Yb co-doped oxy-fluoride glass-ceramics fibers have been drawn from a glass preform followed by controlled annealing. Processing temperatures (drawing and annealing) were selected upon thermal analysis results (DTA/DSC plots). Glass-ceramic structure was confirmed by the XRD measurements. Obtained fibers show good optical properties. As a cladding material polymer material (acrylic resin) is considered due to its low deposition temperature and suitable value of refractive index.

  19. Epitaxial Growth and Properties of Cobalt-doped ZnO on α-Al₂O₃ Single-Crystal Substrates

    SciTech Connect

    Tuan, Allan C.; Bryan, John D.; Pakhomov, Alexandre; Shutthanandan, V.; Thevuthasan, Suntharampillai; McCready, David E.; Gaspar, Dan J.; Engelhard, Mark H.; Rogers, J. W.; Krishnan, Kannan M.; Gamelin, Daniel R.; Chambers, Scott A.

    2004-08-30

    Co-doped ZnO (CoxZn₁-xO) is of potential interest for spintronics due to the prediction of room-temperature ferromagnetism. We have grown epitaxial CoxZn₁-xO films on Al₂O₃(012) substrates by metalorganic chemical vapor deposition using a liquid precursor delivery system. High concentrations of Co (x < 0.35) can be uniformly incorporated into the film without phase segregation. Co is found to be in the ⁺² oxidation state, independent of x. This material can be grown n type by the deliberate incorporation of oxygen vacancies, but not by inclusion of ~1 at. % Al. Semiconducting films remain ferromagnetic up to 350 K. In contrast films without oxygen vacancies are insulating and nonmagnetic, suggesting that exchange interaction is mediated by itinerant carriers. The saturation and remanent magnetization on a per Co basis was very small (< 0.1 μB/Co), even in the best films. The dependence of saturation magnetization, as measured by optical magnetic circular dichroism, on magnetic field and temperature, agrees with the theoretical Brillouin function, demonstrating that the majority of the Co(II) ions behave as magnetically isolated S = 3/2 spins.

  20. P3HT:PCBM:pentacene inverted polymer solar cells with roughened Al-doped ZnO nanorod array and photoelectrochemical treatment

    NASA Astrophysics Data System (ADS)

    Lee, Hsin-Ying; Huang, Hung-Lin

    2014-05-01

    In this work, the P3HT:PCBM:pentacene (1:0.8:0.065 by weight) inverted polymer solar cells with roughened Aldoped ZnO (AZO) nanorod array were fabricated. The pentacene doping could modulate the hole mobility and the electron mobility in the active layer. The optimal hole-electron mobility balance ( µh/ µe=1.000) was achieved as the pentacene doping ratio of 0.065. The 100-nm-long AZO nanorod array were formed as the carrier collection layer and the carrier transportation layer of the inverted polymer solar cells using the combination techniques of the laser interference photolithography method and the wet etching process. Because the AZO nanorod array was prepared using the wet etching process, more defects were formed on the sidewall surface of the AZO nanorods. In this work, the photoelectrochemical (PEC) method was used to grow Zn(OH)2 and Al(OH)3 thin layer on the sidewall surface of the AZO nanorods, which could reduce the carrier recombination path in the inverted polymer solar cells. Compared with the P3HT:PCBM:pentacene (1:0.8:0.065) inverted polymer solar cells without PEC treatment, the short circuit current density and the power conversion efficiency of the inverted polymer solar cells with PEC treatment were increased from 14.56 mA/cm2 to 15.85 mA/cm2 and from 5.45% to 6.13%, respectively. The enhancement in the performance of the inverted polymer solar cells with PEC treatment could be attributed to that the PEC treatment could effectively passivate the defects on the surface of the AZO nonorods.

  1. Electrical stability of Al-doped ZnO transparent electrode prepared by sol-gel method

    NASA Astrophysics Data System (ADS)

    Tabassum, Samia; Yamasue, Eiji; Okumura, Hideyuki; Ishihara, Keiichi N.

    2016-07-01

    Al-doped zinc oxide (AZO) thin films have been considered as a promising alternative to tin doped indium oxide (ITO), which is currently used in various optoelectronic applications. However, the environmental stability of AZO film is not satisfactory, in that the resistivity is significantly increases in air. Here, we investigate the resistivity stability of AZO thin films prepared by sol-gel method using various annealing temperatures and durations. The degradation of resistivity property was observed for AZO films stored in ambient or damp heat environment, where the degradation rate was influenced by annealing temperature. A significant improvement of electrical stability was attained in AZO films that were prepared at high annealing temperature. The films, which showed the highest and the lowest increasing rate of resistivity, were further characterized in detail to shed light on the possible mechanisms explaining the improved stability through crystallinity, surface morphology and elemental state of the thin film.

  2. Effects of NIR annealing on the characteristics of al-doped ZnO thin films prepared by RF sputtering.

    PubMed

    Jun, Min-Chul; Koh, Jung-Hyuk

    2012-01-01

    Aluminum-doped zinc oxide (AZO) thin films have been deposited on glass substrates by employing radio frequency (RF) sputtering method for transparent conducting oxide applications. For the RF sputtering process, a ZnO:Al2O3 (2 wt.%) target was employed. In this paper, the effects of near infrared ray (NIR) annealing technique on the structural, optical, and electrical properties of the AZO thin films have been researched. Experimental results showed that NIR annealing affected the microstructure, electrical resistance, and optical transmittance of the AZO thin films. X-ray diffraction analysis revealed that all films have a hexagonal wurtzite crystal structure with the preferentially c-axis oriented normal to the substrate surface. Optical transmittance spectra of the AZO thin films exhibited transmittance higher than about 80% within the visible wavelength region, and the optical direct bandgap (Eg) of the AZO films was increased with increasing the NIR energy efficiency. PMID:22673232

  3. Effects of NIR annealing on the characteristics of al-doped ZnO thin films prepared by RF sputtering

    PubMed Central

    2012-01-01

    Aluminum-doped zinc oxide (AZO) thin films have been deposited on glass substrates by employing radio frequency (RF) sputtering method for transparent conducting oxide applications. For the RF sputtering process, a ZnO:Al2O3 (2 wt.%) target was employed. In this paper, the effects of near infrared ray (NIR) annealing technique on the structural, optical, and electrical properties of the AZO thin films have been researched. Experimental results showed that NIR annealing affected the microstructure, electrical resistance, and optical transmittance of the AZO thin films. X-ray diffraction analysis revealed that all films have a hexagonal wurtzite crystal structure with the preferentially c-axis oriented normal to the substrate surface. Optical transmittance spectra of the AZO thin films exhibited transmittance higher than about 80% within the visible wavelength region, and the optical direct bandgap (Eg) of the AZO films was increased with increasing the NIR energy efficiency. PMID:22673232

  4. In situ analyses on negative ions in the sputtering process to deposit Al-doped ZnO films

    SciTech Connect

    Tsukamoto, Naoki; Watanabe, Daisuke; Saito, Motoaki; Sato, Yasushi; Oka, Nobuto; Shigesato, Yuzo

    2010-07-15

    The origin of high energy negative ions during deposition of aluminum doped zinc oxide (AZO) films by dc magnetron sputtering of an AZO (Al{sub 2}O{sub 3}: 2.0 wt %) target was investigated by in situ analyses using the quadrupole mass spectrometer combined with the electrostatic energy analyzer. High energy negative oxygen (O{sup -}) ions which possessed the kinetic energy corresponding to the cathode sheath voltage were detected. The maximum flux of the O{sup -} ions was clearly observed at the location opposite to the erosion track area on the target. The flux of the O{sup -} ions changed hardly with increasing O{sub 2} flow ratio [O{sub 2}/(Ar+O{sub 2})] from 0% to 5%. The kinetic energy of the O{sup -} ions decreased with decreasing cathode sheath voltage from 403 to 337 V due to the enhancement of the vertical maximum magnetic field strength at the cathode surface from 0.025 to 0.100 T. The AZO films deposited with the lower O{sup -} bombardment energy showed the higher crystallinity and improved the electrical conductivity.

  5. Effect of nitrogen as co-dopant in carbon and boron-doped ZnO clusters

    NASA Astrophysics Data System (ADS)

    Kapila, Neha; Sharma, Gaurav; Mudahar, Isha; Sharma, Hitesh

    2016-05-01

    The effect of N as co-dopant have been investigated on magnetic properties of C and B-doped (ZnO)n clusters (n = 1 - 16) using spin-polarized density functional theory. Total energy calculations show that C and N more stable when substituted at O site, whereas B is more stable at the Zn site. The B:N co-doping is energetically more stable than C:N which is more stable than N:N doping. C and N atoms do not show tendency to form clusters when doped separately. The magnetic moment (MM) of C-doped ZnO clusters is enhanced significantly with N co-doping. The MM of 2 μB, 1 μB and 1 μB per atom is induced due to C, N and B respectively. The MM of 3 μB or 5 μB and 2 μB or 4 μB are observed for co-doping of 2C:N and C:2N respectively. In contrary, the MM in 2B:N and B:2N co-doped (ZnO)n remains 1 μB for n=2-4, 12 and 16. The results are in agreement with the available theoretical results.

  6. Near infrared luminescence in Yb3+/Ho3+: co-doped germanate glass

    NASA Astrophysics Data System (ADS)

    Kochanowicz, Marcin; Żmojda, Jacek; Miluski, Piotr; Ragin, Tomasz; Jeleń, Piotr; Sitarz, Maciej; Dorosz, Dominik

    2015-12-01

    The near-infrared emission of low phonon (805 cm-1) germanate glasses from GeO2-Ga2O3-BaO system co-doped with 0.7Yb2O3/(0.07-0.7)Ho2O3 ions has been investigated. Luminescence at 2.1 μm corresponding to 5I7 → 5I8 transition in holmium was obtained by energy transfer between Yb3+ and Ho3+ ions. The optimization of the activator content and the concentration ratio were conducted with the purpose of maximizing the efficiency of energy transfer and as a consequence luminescence intensity at 2mm. The highest value of the luminescence intensity was obtained in glass codoped with 0.7Yb2O3/0.15 Ho2O3.

  7. Magnetic property and possible half-metal behavior in Co-doped graphene

    SciTech Connect

    Li, Zhongyao Xie, Wenze; Liu, Xingen; Wu, Yong

    2015-02-28

    The magnetic property and band structures of Co-monolayer doped graphene were examined on the basis of density-functional theory. The magnetic moment of the system is closely related to the interfacial spacing. Magnetic-nonmagnetic transition would be produced by decreasing the layer distance. Although the magnetic moment can also be reduced by increasing the lattice constant, the ground states are magnetic states under tension. Besides, the increase of lattice constant greatly enlarges the direct and indirect gaps of spin-down bands near the Fermi level. With a little increase of the Fermi level or the electron density, half-metal behavior would be expectable in the Co-doped graphene under tension.

  8. Electronic and magnetic properties of Co doped MoS2 monolayer

    PubMed Central

    Wang, Yiren; Li, Sean; Yi, Jiabao

    2016-01-01

    First principle calculations are employed to calculate the electronic and magnetic properties of Co doped MoS2 by considering a variety of defects including all the possible defect complexes. The results indicate that pristine MoS2 is nonmagnetic. The materials with the existence of S vacancy or Mo vacancy alone are non-magnetic either. Further calculation demonstrates that Co substitution at Mo site leads to spin polarized state. Two substitutional CoMo defects tend to cluster and result in the non-magnetic behaviour. However, the existence of Mo vacancies leads to uniform distribution of Co dopants and it is energy favourable with ferromagnetic coupling, resulting in an intrinsic diluted magnetic semiconductor. PMID:27052641

  9. Crystallization studies on rare-earth co-doped fluorozirconate-based glasses

    PubMed Central

    Paßlick, C.; Johnson, J.A.; Schweizer, S.

    2013-01-01

    This work focuses on the structural changes of barium chloride (BaCl2) nanoparticles in fluorochlorozirconate-based glass ceramics when doped with two different luminescent activators, in this case rare-earth (RE) ions, and thermally processed using a differential scanning calorimeter. In a first step, only europium in its divalent and trivalent oxidation states, Eu2+ and Eu3+, is investigated, which shows no significant influence on the crystallization of hexagonal phase BaCl2. However, higher amounts of Eu2+ increase the activation energy of the phase transition to an orthorhombic crystal structure. In a second step, nucleation and nanocrystal growth are influenced by changing the structural environment of the glasses by co-doping with Eu2+ and trivalent Gd3+, Nd3+, Yb3+, or Tb3+, due to the different atomic radii and electro-negativity of the co-dopants. PMID:23745010

  10. Co-doped sodium chloride crystals exposed to different irradiation temperature

    SciTech Connect

    Ortiz-Morales, A.; Cruz-Zaragoza, E.; Furetta, C.; Kitis, G.; Flores J, C.; Hernandez A, J.; Murrieta S, H.

    2013-07-03

    Monocrystals of NaCl:XCl{sub 2}:MnCl{sub 2}(X = Ca,Cd) at four different concentrations have been analyzed. The crystals were exposed to different irradiation temperature, such as at room temperature (RT), solid water (SW), dry ice (DI) and liquid nitrogen (LN). The samples were irradiated with photon from {sup 60}Co irradiators. The co-doped sodium chloride crystals show a complex structure of glow curves that can be related to different distribution of traps. The linearity response was analyzed with the F(D) index. The F(D) value was less than unity indicating a sub-linear response was obtained from the TL response on the function of the dose. The glow curves were deconvoluted by using the CGCD program based on the first, second and general order kinetics.

  11. Aqueous synthesis and characterization of Ni, Zn co-doped CdSe QDs

    NASA Astrophysics Data System (ADS)

    Thirugnanam, N.; Govindarajan, D.

    2016-01-01

    Ni, Zn co-doped CdSe quantum dots (QDs) were synthesized by chemical precipitation method through aqueous route. The prepared QDs were characterized by X-ray diffraction (XRD) technique, UV-Vis absorption spectroscopy, photoluminescence (PL) spectroscopy and high resolution transmission electron microscopy (HRTEM). XRD technique results indicate that the prepared samples have a zinc blende cubic phase. From UV-Vis absorption spectroscopy technique, the prepared samples were blue shifted with respect to their bulk counter part due to quantum confinement effect. Among different doping ratios examined, a maximum PL emission intensity was observed for CdSe:Ni(1 %):Zn(1 %) QDs. HRTEM pictures show that the prepared QDs were in spherical shape.

  12. Electronic and magnetic properties of Co doped MoS2 monolayer

    NASA Astrophysics Data System (ADS)

    Wang, Yiren; Li, Sean; Yi, Jiabao

    2016-04-01

    First principle calculations are employed to calculate the electronic and magnetic properties of Co doped MoS2 by considering a variety of defects including all the possible defect complexes. The results indicate that pristine MoS2 is nonmagnetic. The materials with the existence of S vacancy or Mo vacancy alone are non-magnetic either. Further calculation demonstrates that Co substitution at Mo site leads to spin polarized state. Two substitutional CoMo defects tend to cluster and result in the non-magnetic behaviour. However, the existence of Mo vacancies leads to uniform distribution of Co dopants and it is energy favourable with ferromagnetic coupling, resulting in an intrinsic diluted magnetic semiconductor.

  13. Structural and dielectric properties of Nd/Ca co-doped bi-ferrite multiferroics

    SciTech Connect

    Kumar, Ashwini E-mail: ashu.dhanda@gmail.com; Sharma, Poorva E-mail: ashu.dhanda@gmail.com; Varshney, Dinesh E-mail: ashu.dhanda@gmail.com

    2014-04-24

    Single-phase polycrystalline samples of Bi{sub 0.8}Nd{sub 0.2−x}Ca{sub x}FeO{sub 3} (x = 0.0, 0.1) were synthesized by chemical coprecipitation method. X-ray diffraction patterns accompanied by Rietveld-refined crystal structure parameters reveal the phase transition of Bi{sub 0.8}Nd{sub 0.1}Ca{sub 0.1}FeO{sub 3} with rhombohedral R3c symmetry to triclinic structure of Bi{sub 0.8}Nd{sub 0.2}FeO{sub 3} sample. Frequency dependence of dielectric constant (ε') and dielectric loss (tanδ), infers enhancement of both ε' (tanδ) in narrow band gap of Nd/Ca co-doped BFO as compare to wide band pristine BFO.

  14. Slow/fast light using a very short Er3+/Yb3+ co-doped fiber.

    PubMed

    Gan, Jiulin; Chen, Jiali; Xu, Shanhui; Yang, Zhongmin; Jiang, Zhonghong

    2013-03-01

    A slow/fast light device with a sealed size of 130 mm×30 mm×3 mm has been demonstrated. Ultraslow propagation and superluminal propagation with group velocity values from 8.4 to -14.7 m/s are observed in a 3.86 cm long Er3+/Yb3+ co-doped single-mode phosphate glass fiber. The dependence of pump power, modulation frequency, and wavelength on the slow/fast light effect in this fiber is investigated in detail. These results suggest that this compact slow/fast device is more suitable for all-fiber applications than those made by traditional methods. PMID:23455260

  15. Characterization of CdZnTe co-doped with indium and lead

    NASA Astrophysics Data System (ADS)

    Zaman, Yasir; Jie, Wanqi; Wang, Tao; He, Yihui; Xu, Lingyan; Guo, Rongrong; Xu, Yadong; Zha, Gangqiang

    2015-01-01

    Indium and lead co-doped Cd0.9Zn0.1Te (CZT:(In,Pb)) were characterized by using I-V measurement, thermally stimulated current (TSC) spectroscopy and time-of-flight (TOF). The concentration of doping level of In and Pb was 10 ppm and 2 ppm, respectively. I-V curves showed that CZT:(In,Pb) possessed the resistivity as high as 1.8×1010 Ω cm, and the mobility (μ) of about 868 cm2/V s, which is considered acceptable for detector's fabrication. However, the carrier life time (τ) was only 9.44×10-7 s. Therefore, the μτ (mobility life time product) value was low. TSC results showed thirteen different trap levels, which were much more than that in Indium doped CZT crystal. Several special traps associated with lead were found, which might be the reason for the low carrier life time.

  16. Ultrahigh volumetric capacitance and cyclic stability of fluorine and nitrogen co-doped carbon microspheres

    PubMed Central

    Zhou, Junshuang; Lian, Jie; Hou, Li; Zhang, Junchuan; Gou, Huiyang; Xia, Meirong; Zhao, Yufeng; Strobel, Timothy A.; Tao, Lu; Gao, Faming

    2015-01-01

    Highly porous nanostructures with large surface areas are typically employed for electrical double-layer capacitors to improve gravimetric energy storage capacity; however, high surface area carbon-based electrodes result in poor volumetric capacitance because of the low packing density of porous materials. Here, we demonstrate ultrahigh volumetric capacitance of 521 F cm−3 in aqueous electrolytes for non-porous carbon microsphere electrodes co-doped with fluorine and nitrogen synthesized by low-temperature solvothermal route, rivaling expensive RuO2 or MnO2 pseudo-capacitors. The new electrodes also exhibit excellent cyclic stability without capacitance loss after 10,000 cycles in both acidic and basic electrolytes at a high charge current of 5 A g−1. This work provides a new approach for designing high-performance electrodes with exceptional volumetric capacitance with high mass loadings and charge rates for long-lived electrochemical energy storage systems. PMID:26415838

  17. First-principles study of n-type tin/fluorine co-doped beta-gallium oxides

    NASA Astrophysics Data System (ADS)

    Yinnü, Zhao; Jinliang, Yan

    2015-08-01

    Defect formation energies, electronic structures and optical properties of Sn-doped β-Ga2O3, F-doped β-Ga2O3, and Sn/F co-doped β-Ga2O3 were calculated using the first-principles. The calculated results of the pure and Sn-doped β-Ga2O3 using the local-density approximation (LDA) method show that the lattice parameters and electronic structures are in agreement with previous data. The defect formation energies demonstrate that the doped systems are relatively easy to form under O-rich conditions. Sn-doping, F-doping and Sn/F co-doping make β-Ga2O3 become an n-type semiconductor. Sn/F co-doping β-Ga2O3 has the smallest effective electron mass and the biggest relative electron number, which is expected to possess good conductivity. Sn/F co-doping β-Ga2O3 displays an intense absorption in visible light. Project supported by the National Natural Science Foundation of China (No. 10974077), and the Innovation Project of Shandong Graduate Education, China (No. SDYY13093).

  18. Structural transformation and multiferroic properties of Ba-Mn co-doped BiFeO3

    NASA Astrophysics Data System (ADS)

    Rout, Jyoshna; Choudhary, R. N. P.

    2016-01-01

    Pure BiFeO3 and Bi1-xBaxFe1-xMnxO3 (x = 0.10, 0.20) fine ceramics were synthesized using mechano-synthesis route. The influence of co-doping (Ba-Mn) on structural and multiferroic properties of BiFeO3 has been studied in different experimental conditions. X-ray diffraction patterns, Rietveld structural refinement of XRD patterns and Fourier transform infrared (FTIR) spectra reveal the structural transition from rhombohedral (R3c) to the biphasic structure (R3c + P4mm) on co-doping. The co-doping improves surface morphology and also reduces the particle size. The room temperature M-H loops of all samples showed antiferromagnetic/weak ferromagnetic behavior. Magnetoelectric coupling coefficient determination is carried out to reveal extent of intimate interaction between electric and magnetic dipoles interaction in the samples. Room temperature occurrence of ferromagnetism, ferroelectricity and magnetoelectric effect supports the observation of multiferroism and magnetoelectric coupling in BiFeO3. Thus, co-doping at Bi- and Fe-sites of BiFeO3 can improve multiferroic properties of BiFeO3 for various applications.

  19. Encapsulation of Fe3O4 Nanoparticles into N, S co-Doped Graphene Sheets with Greatly Enhanced Electrochemical Performance

    PubMed Central

    Yang, Zunxian; Qian, Kun; Lv, Jun; Yan, Wenhuan; Liu, Jiahui; Ai, Jingwei; Zhang, Yuxiang; Guo, Tailiang; Zhou, Xiongtu; Xu, Sheng; Guo, Zaiping

    2016-01-01

    Particular N, S co-doped graphene/Fe3O4 hybrids have been successfully synthesized by the combination of a simple hydrothermal process and a subsequent carbonization heat treatment. The nanostructures exhibit a unique composite architecture, with uniformly dispersed Fe3O4 nanoparticles and N, S co-doped graphene encapsulant. The particular porous characteristics with many meso/micro holes/pores, the highly conductive N, S co-doped graphene, as well as the encapsulating N, S co-doped graphene with the high-level nitrogen and sulfur doping, lead to excellent electrochemical performance of the electrode. The N-S-G/Fe3O4 composite electrode exhibits a high initial reversible capacity of 1362.2 mAhg−1, a high reversible specific capacity of 1055.20 mAhg−1 after 100 cycles, and excellent cycling stability and rate capability, with specific capacity of 556.69 mAhg−1 when cycled at the current density of 1000 mAg−1, indicating that the N-S-G/Fe3O4 composite is a promising anode candidate for Li-ion batteries. PMID:27296103

  20. Er{sup 3+}/Yb{sup 3+}co-doped bismuth molybdate nanosheets upconversion photocatalyst with enhanced photocatalytic activity

    SciTech Connect

    Adhikari, Rajesh; Gyawali, Gobinda; Cho, Sung Hun; Narro-García, R.; Sekino, Tohru; Lee, Soo Wohn

    2014-01-15

    In this paper, we report the microwave hydrothermal synthesis of Er{sup 3+}/Yb{sup 3+} co-doped Bi{sub 2}MoO{sub 6} upconversion photocatalyst. Crystal structure, morphology, elemental composition, optical properties and BET surface area were analyzed in detail. Infrared to visible upconversion luminescence at 532 nm and 546 nm of the co-doped samples was investigated under excitation at 980 nm. The results revealed that the co-doping of Er{sup 3+}/Yb{sup 3+} into Bi{sub 2}MoO{sub 6} exhibited enhanced photocatalytic activity for the decomposition of rhodamine B under simulated solar light irradiation. Enhanced photocatalytic activity can be attributed to the energy transfer between Er{sup 3+}/Yb{sup 3+} and Bi{sub 2}MoO{sub 6} via infrared to visible upconversion from Er{sup 3+}/Yb{sup 3+} ion and higher surface area of the Bi{sub 2}MoO{sub 6} nanosheets. Therefore, this synthetic approach may exhibit a better alternative to fabricate upconversion photocatalyst for integral solar light absorption. - Graphical abstract: Schematic illustration of the upconversion photocatalysis. Display Omitted - Highlights: • Er{sup 3+}/Yb{sup 3+} co-doped Bi{sub 2}MoO{sub 6} upconversion photocatalyst is successfully synthesized. • We obtained the nanosheets having high surface area. • Upconversion of IR to visible light was confirmed. • Upconversion phenomena can be utilized for effective photocatalysis.

  1. Encapsulation of Fe3O4 Nanoparticles into N, S co-Doped Graphene Sheets with Greatly Enhanced Electrochemical Performance.

    PubMed

    Yang, Zunxian; Qian, Kun; Lv, Jun; Yan, Wenhuan; Liu, Jiahui; Ai, Jingwei; Zhang, Yuxiang; Guo, Tailiang; Zhou, Xiongtu; Xu, Sheng; Guo, Zaiping

    2016-01-01

    Particular N, S co-doped graphene/Fe3O4 hybrids have been successfully synthesized by the combination of a simple hydrothermal process and a subsequent carbonization heat treatment. The nanostructures exhibit a unique composite architecture, with uniformly dispersed Fe3O4 nanoparticles and N, S co-doped graphene encapsulant. The particular porous characteristics with many meso/micro holes/pores, the highly conductive N, S co-doped graphene, as well as the encapsulating N, S co-doped graphene with the high-level nitrogen and sulfur doping, lead to excellent electrochemical performance of the electrode. The N-S-G/Fe3O4 composite electrode exhibits a high initial reversible capacity of 1362.2 mAhg(-1), a high reversible specific capacity of 1055.20 mAhg(-1) after 100 cycles, and excellent cycling stability and rate capability, with specific capacity of 556.69 mAhg(-1) when cycled at the current density of 1000 mAg(-1), indicating that the N-S-G/Fe3O4 composite is a promising anode candidate for Li-ion batteries. PMID:27296103

  2. Microwave-assisted hydrothermally grown epitaxial ZnO films on Left-Pointing-Angle-Bracket 1 1 1 Right-Pointing-Angle-Bracket MgAl{sub 2}O{sub 4} substrate

    SciTech Connect

    Liew, Laura-Lynn; Le, Hong Quang; Goh, Gregory K.L.

    2012-05-15

    In this report, epitaxial ZnO films were grown on Left-Pointing-Angle-Bracket 1 1 1 Right-Pointing-Angle-Bracket MgAl{sub 2}O{sub 4} single crystal substrates using Microwave Assisted Hydrothermal (MAH) method with microwave radiation heating (2.45 GHz) at 90 Degree-Sign C in a short time (within 15 min). Scanning electron microscopy confirms that these films possess smooth surface morphology with fully coalesced grains. In addition, photoluminescence (PL) measurements exhibit strong ultraviolet emission at room temperature, indicating potential applications for short-wave light-emitting photonic devices. The PL properties were improved by a thermal annealing process without generating structural defects. Hall measurements after thermal treatment show the carrier concentration to be of the order of 10{sup 19} cm{sup -3} which is comparable to those grown by conventional solution methods. The MAH method will offer a rapid route to synthesize epitaxial ZnO films with good optical and electrical properties for various applications. - Graphical abstract: FESEM images showing the morphology and cross sectional view of ZnO films grown using microwave assisted hydrothermal method at 90 Degree-Sign C for 30 min. Highlights: Black-Right-Pointing-Pointer Microwave Assisted Hydrothermal (MAH) method was introduced to synthesize epitaxial ZnO films. Black-Right-Pointing-Pointer The films possess smooth surface morphology, fully coalesced grains with high optical properties. Black-Right-Pointing-Pointer It exhibit good electrical properties (carrier concentration 10{sup 19} cm{sup -3}, mobility 19 cm{sup 2}/Vs).

  3. Ferroelectric properties of (Pb,La)(Zr,Ti)O3 capacitors employing Al-doped ZnO top electrodes prepared by pulsed laser deposition under different oxygen pressures

    NASA Astrophysics Data System (ADS)

    Takada, Yoko; Okamoto, Naoki; Saito, Takeyasu; Kondo, Kazuo; Yoshimura, Takeshi; Fujimura, Norifumi; Higuchi, Koji; Kitajima, Akira

    2016-06-01

    Al-doped ZnO (AZO) top electrodes were deposited under oxygen pressures from 0.02 to 20 Pa using pulsed laser deposition (PLD) to fabricate ferroelectric (Pb,La)(Zr,Ti)O3 capacitors. The oxygen pressure during PLD affected the surface morphology of the AZO top electrodes as well as the ferroelectric properties. In particular, the surface morphologies were dramatically altered by increasing oxygen pressure. We obtained desirable ferroelectric properties with the highest maximum polarization and lowest coercive voltage at around 2.0 Pa. The saturation characteristics, hydrogen degradation resistance, and fatigue resistance were almost unrelated to the oxygen pressure during PLD.

  4. Interband emission energy in wurtzite GaN/Ga{sub 0.8}Al{sub 0.2}N and ZnO/ Zn{sub 0.607}Mg{sub 0.393}O strained quantum dots

    SciTech Connect

    Minimala, N. S.; Peter, A. John

    2014-04-24

    The effects of geometrical confinement on the exciton binding energies and thereby the interband emission energy are investigated in wurtzite /Ga{sub 0.8}Al{sub 0.2}N and ZnO/ Zn{sub 0.607}Mg{sub 0.393}O quantum dots taking into account the geometrical confinement. The calculations are performed with the same barrier height of both the materials. The effects of strain and the internal electric field, induced by spontaneous and piezoelectric polarization, are taken into consideration in all the calculations.

  5. High-quality ZnO growth, doping, and polarization effect

    NASA Astrophysics Data System (ADS)

    Kun, Tang; Shulin, Gu; Jiandong, Ye; Shunming, Zhu; Rong, Zhang; Youdou, Zheng

    2016-03-01

    The authors have reported their recent progress in the research field of ZnO materials as well as the corresponding global advance. Recent results regarding (1) the development of high-quality epitaxy techniques, (2) the defect physics and the Te/N co-doping mechanism for p-type conduction, and (3) the design, realization, and properties of the ZnMgO/ZnO hetero-structures have been shown and discussed. A complete technology of the growth of high-quality ZnO epi-films and nano-crystals has been developed. The co-doping of N plus an iso-valent element to oxygen has been found to be the most hopeful path to overcome the notorious p-type hurdle. High mobility electrons have been observed in low-dimensional structures utilizing the polarization of ZnMgO and ZnO. Very different properties as well as new physics of the electrons in 2DEG and 3DES have been found as compared to the electrons in the bulk. Project supported by the National Natural Science Foundation of China (Nos. 61025020, 61274058, 61322403, 61504057, 61574075), the Natural Science Foundation of Jiangsu Province (Nos. BK2011437, BK20130013, BK20150585), the Priority Academic Program Development of Jiangsu Higher Education Institutions, and the Fundamental Research Funds for the Central Universities.

  6. Defects in ZnO

    NASA Astrophysics Data System (ADS)

    McCluskey, M. D.; Jokela, S. J.

    2009-10-01

    Zinc oxide (ZnO) is a wide band gap semiconductor with potential applications in optoelectronics, transparent electronics, and spintronics. The high efficiency of UV emission in this material could be harnessed in solid-state white lighting devices. The problem of defects, in particular, acceptor dopants, remains a key challenge. In this review, defects in ZnO are discussed, with an emphasis on the physical properties of point defects in bulk crystals. As grown, ZnO is usually n-type, a property that was historically ascribed to native defects. However, experiments and theory have shown that O vacancies are deep donors, while Zn interstitials are too mobile to be stable at room temperature. Group-III (B, Al, Ga, and In) and H impurities account for most of the n-type conductivity in ZnO samples. Interstitial H donors have been observed with IR spectroscopy, while substitutional H donors have been predicted from first-principles calculations but not observed directly. Despite numerous reports, reliable p-type conductivity has not been achieved. Ferromagnetism is complicated by the presence of secondary phases, grain boundaries, and native defects. The famous green luminescence has several possible origins, including Cu impurities and Zn vacancies. The properties of group-I (Cu, Li, and Na) and group-V (N, P, As, and Sb) acceptors, and their complexes with H, are discussed. In the future, doping of ZnO nanocrystals will rely on an understanding of these fundamental properties.

  7. Characteristics of Al-doped ZnO thin films prepared in Ar + H{sub 2} atmosphere and their vacuum annealing behavior

    SciTech Connect

    Zhu, Bailin; Lü, Kun; Wang, Jun; Li, Taotao; Wu, Jun; Zeng, Dawen; Xie, Changsheng

    2013-11-15

    The microstructure and electrical–optical properties of Al-doped ZnO (AZO) films have been studied as a function of H{sub 2} flux in the magnetron sputtering process at 150 °C and postannealing temperature in vacuum. As H{sub 2} flux increases in the sputtering gas, the AZO films deposited have a (002) preferred orientation rather than the mixed (100) and (002) orientations, the grain size shows a tendency to first increase then decrease, and (002) diffraction peak position is inclined to shift to higher angles first then to lower angles. The resistivity of the films first decreases then increases with H{sub 2} flux, and the lowest resistivity of 4.02 × 10{sup −4}Ω cm is obtained at a H{sub 2} flux of 10 sccm. The average transmittance in the visible region shows little dependence on H{sub 2} flux. As a whole, the AZO films with higher values of figure of merit are obtained when the H{sub 2} flux is in the range of 6–12 sccm. The AZO films deposited in Ar and Ar + H{sub 2} exhibit different annealing behaviors. For the AZO film deposited in Ar, the grain size gradually increases, the stresses are relaxed, the resistivity first decreases then increases, and the average transmittance in the visible region is unchanged initially then somewhat decreased as annealing temperature is increased. The optimum annealing temperature for improving properties of AZO films deposited in Ar is 300 °C. For the AZO films deposited in Ar + H{sub 2}, annealing does not significantly change the microstructure but increases the resistivity of the films; the average transmittance in the visible region remains unchanged initially but greatly reduced with further increase in annealing temperature. The carrier transport in the as-deposited and annealed films appears to be controlled by a mechanism of grain boundary scattering, and the value of E{sub g} increases with the increase in carrier concentration due to Burstein–Moss effect.

  8. Poole-Frenkel effect on electrical characterization of Al-doped ZnO films deposited on p-type GaN

    SciTech Connect

    Huang, Bohr-Ran; Liao, Chung-Chi; Ke, Wen-Cheng Chang, Yuan-Ching; Huang, Hao-Ping; Chen, Nai-Chuan

    2014-03-21

    This paper presents the electrical properties of Al-doped ZnO (AZO) films directly grown on two types of p-type GaN thin films. The low-pressure p-GaN thin films (LP-p-GaN) exhibited structural properties of high-density edge-type threading dislocations (TDs) and compensated defects (i.e., nitrogen vacancy). Compared with high-pressure p-GaN thin films (HP-p-GaN), X-ray photoemission spectroscopy of Ga 3d core levels indicated that the surface Fermi-level shifted toward the higher binding-energy side by approximately 0.7 eV. The high-density edge-type TDs and compensated defects enabled surface Fermi-level shifting above the intrinsic Fermi-level, causing the surface of LP-p-GaN thin films to invert to n-type semiconductor. A highly nonlinear increase in leakage current regarding reverse-bias voltage was observed for AZO/LP-p-GaN. The theoretical fits for the reverse-bias voltage region indicated that the field-assisted thermal ionization of carriers from defect associated traps, which is known as the Poole-Frenkel effect, dominated the I-V behavior of AZO/LP-p-GaN. The fitting result estimated the trap energy level at 0.62 eV below the conduction band edge. In addition, the optical band gap increased from 3.50 eV for as-deposited AZO films to 3.62 eV for 300 °C annealed AZO films because of the increased carrier concentration. The increasing Fermi-level of the 300 °C annealed AZO films enabled the carrier transport to move across the interface into the LP-p-GaN thin films without any thermal activated energy. Thus, the Ohmic behavior of AZO contact can be achieved directly on the low-pressure p-GaN films at room temperature.

  9. Self-organized vanadium and nitrogen co-doped titania nanotube arrays with enhanced photocatalytic reduction of CO2 into CH4

    PubMed Central

    2014-01-01

    Self-organized V-N co-doped TiO2 nanotube arrays (TNAs) with various doping amount were synthesized by anodizing in association with hydrothermal treatment. Impacts of V-N co-doping on the morphologies, phase structures, and photoelectrochemical properties of the TNAs films were thoroughly investigated. The co-doped TiO2 photocatalysts show remarkably enhanced photocatalytic activity for the CO2 photoreduction to methane under ultraviolet illumination. The mechanism of the enhanced photocatalytic activity is discussed in detail. PMID:24948893

  10. Processing and Characterization of In-Situ Generated Nanosilver and Er3+ Co-Doped Bromoborosilicate Glass Nanocomposites.

    PubMed

    Sarkar, Jit; Tarafder, Anal; Karmakar, Basudeb

    2015-09-01

    In the present investigation, bromoborosilicate glass of composition 6Na2O-19K2O-10BaBr2- 2Al2O3-15B2O3-48SiO2 (mole %) added with 0.2 wt% SnO, co-doped with 0.001 wt% Ag and 0.7 wt% Er2O3 in excess amount, was prepared by melt-quench technique. The metal-glass nanocomposites were derived involving a single-step in-situ thermochemical reduction of the precursor glass subjecting an isothermal heat-treatment protocol. The precursor glass and metal glass nanocomposites were characterized by dilatometer, differential scanning calorimeter, X-ray diffractometer, field emission scanning electron microscope, transmission electron microscope, Fourier transform infrared spectrometer, UV-Vis-NIR spectrophotometer, fluorimeter etc. XRD spectra represent the amorphous nature of the samples and without having any sharp peaks of silver (Ag0) and barium bromide (BaBr2). But the FESEM micrograph shows the presence of BaBr2 crystallites in clusters and the TEM micrograph shows the presence of AgO nanoparticles of different shapes and sizes. The precursor glass sample shows sharp absorption peak at 378 nm and 521 nm due to the 4G11,2 and 2H11/2 energy levels of Er3+ but glass nanocomposites exhibit another band at 410 nm due to the surface plasmon resonance of Ag0 nanoparticles. They also show sharp emis- sion peak at 1542 nm due to 4115/2 -+4l13/2 transition of Er3+ ions and prominent upconverted peaks at 630 nm (red, medium) and 645 nm (red, strong) due to 4F9/2 + 1 15/2 transition. The intensity of the absorption and upconverted peaks increases with the duration of heat treatment, having maximum intensity at 5 h and the intensity of the emission peak increases with heat treatment upto 1 h and then decreases for 5 h. Thus these metal-glass nanocomposites show enhanced photoluminescence upconversion and are promising material for different photonic applications. PMID:26716215

  11. XAFS study on the temperature-dependent occupation sites of Co codopants in (Co, Cu)-codoped ZnO films

    NASA Astrophysics Data System (ADS)

    Hu, Fengchun; Zhang, Shibao; Pan, Zhiyun; Yan, Wensheng; Liu, Qinghua; Yao, Tao; Wei, Shiqiang

    2016-05-01

    Elemental codoping has been an effective way to regulate the structural and electronic properties of semiconductors. By using x-ray diffraction and x-ray absorption fine structure spectroscopy, we investigate the local structure and spatial occupations of Co dopants in Cu-doped ZnO thin films prepared by pulsed-laser deposition method. It is revealed that the Co dopants are substantially incorporated into ZnO matrix when the deposition temperature is increased up to 650 °C, although the preferential orientation of ZnO film is changed. The results provide experimental guidance in the synthesis of the co-doped ZnO based dilute magnetic semiconductors.

  12. Novel band gap-tunable K-Na co-doped graphitic carbon nitride prepared by molten salt method

    NASA Astrophysics Data System (ADS)

    Zhao, Jiannan; Ma, Lin; Wang, Haoying; Zhao, Yanfeng; Zhang, Jian; Hu, Shaozheng

    2015-03-01

    Novel band gap-tunable K-Na co-doped graphitic carbon nitride was prepared by molten salt method using melamine, KCl, and NaCl as precursor. X-ray diffraction (XRD), N2 adsorption, Scanning electron microscope (SEM), UV-vis spectroscopy, Photoluminescence (PL), and X-ray photoelectron spectroscopy (XPS) were used to characterize the prepared catalysts. The CB and VB potentials of graphitic carbon nitride could be tuned from -1.09 and +1.55 eV to -0.29 and +2.25 eV by controlling the weight ratio of eutectic salts to melamine. Besides, ions doping inhibited the crystal growth of graphitic carbon nitride, enhanced the surface area, and increased the separation rate of photogenerated electrons and holes. The visible-light-driven Rhodamine B (RhB) photodegradation and mineralization performances were significantly improved after K-Na co-doping.

  13. Enhanced visible light photocatalytic performance of g-C3N4 photocatalysts co-doped with iron and phosphorus

    NASA Astrophysics Data System (ADS)

    Hu, Shaozheng; Ma, Lin; You, Jiguang; Li, Fayun; Fan, Zhiping; Lu, Guang; Liu, Dan; Gui, Jianzhou

    2014-08-01

    Preparation of Fe and P co-doped g-C3N4 was described, using dicyandiamide monomer, ferric nitrate, and diammonium hydrogen phosphate as precursor. X-ray diffraction (XRD), N2 adsorption, UV-vis spectroscopy, Fourier transform infrared spectra (FT-IR), photoluminescence (PL), X-ray photoelectron spectroscopy (XPS), and photocurrent measurement were used to characterize the prepared catalysts. The results indicated that the addition of dopants inhibited the crystal growth of graphitic carbon nitride, enhanced the surface area, decreased the band gap energy, and restrained the recombination of photogenerated electrons and holes. Fe and P co-doped g-C3N4 exhibited much higher Rhodamine B (RhB) photodegradation rate and H2 production ability than that of single doped and neat g-C3N4 catalysts. The possible mechanism and doping sites of P and Fe were proposed.

  14. The influence of Er, Ti co-doping on the multiferroic properties of BiFeO3 thin films

    NASA Astrophysics Data System (ADS)

    Ma, Yinina; Xing, Wenyu; Chen, Jieyu; Bai, Yulong; Zhao, Shifeng; Zhang, Hao

    2016-02-01

    The pure and Er, Ti co-doped BiFeO3 thin films were prepared by chemistry solution deposition. Enhanced ferroelectric and ferromagnetic properties were obtained, which is mainly attributed to that the effect of co-doping Er and Ti leads to the drastic crystal structural transformation from rhombohedral phase to orthorhombic phase. Thus crystal structural transformation not only changes the switching behavior of the polarization path to improve the ferroelectric polarization, but also suppresses the original spiral spin structure to release the locked magnetization. At the same time, the leakage current density is decreased after doping Er3+ and Ti4+, which results from that the crystal structural transformation changes the leakage current mechanism. The present work provides an available way on improving the multiferroic properties of BiFeO3 thin films.

  15. Photocatalytic enhancement of TiO2 by B and Zr co-doping and modulation of microstructure

    NASA Astrophysics Data System (ADS)

    Fu, Chengxin; Gong, Yinyan; Wu, Yitao; Liu, Jiaqi; Zhang, Zhen; Li, Can; Niu, Lengyuan

    2016-08-01

    Visible-light photodegradation test revealed that B and Zr co-doping can raise the photocatalytic ability of the undoped TiO2 by a fold. XRD crystallography and Raman phonon spectroscopy measurements suggest that the Zr4+ ions replace the Ti4+ ions while the B3+ ions occupy the interstitial sites, expanding the unit-cell volume and reducing crystallite size. The incorporation of interstitial boron dopants creates oxygen vacancies (Ovrad rad) and reduce Ti4+ to Ti3+ to form [Ovrad rad -Ti3+]+, which traps the carriers and prolongs carrier lifetime. Moreover, Zr4+ ions replace Ti4+ ions and form impurity levels, which could improve visible light response. The co-doped samples are benefited from both B interstitials and Zr substitutes.

  16. Cobalt and sulfur co-doped nano-size TiO2 for photodegradation of various dyes and phenol.

    PubMed

    Siddiqa, Asima; Masih, Dilshad; Anjum, Dalaver; Siddiq, Muhammad

    2015-11-01

    Various compositions of cobalt and sulfur co-doped titania nano-photocatalyst are synthesized via sol-gel method. A number of techniques including X-ray diffraction (XRD), ultraviolet-visible (UV-Vis), Rutherford backscattering spectrometry (RBS), thermal gravimetric analysis (TGA), Raman, N2 sorption, electron microscopy are used to examine composition, crystalline phase, morphology, distribution of dopants, surface area and optical properties of synthesized materials. The synthesized materials consisted of quasispherical nanoparticles of anatase phase exhibiting a high surface area and homogeneous distribution of dopants. Cobalt and sulfur co-doped titania demonstrated remarkable structural and optical properties leading to an efficient photocatalytic activity for degradation of dyes and phenol under visible light irradiations. Moreover, the effect of dye concentration, catalyst dose and pH on photodegradation behavior of environmental pollutants and recyclability of the catalyst is also examined to optimize the activity of nano-photocatalyst and gain a better understanding of the process. PMID:26574093

  17. Magnetism at grain boundary interfacesin the colossal permittivity dielectric material; In+Nb Co-Doped Rutile

    NASA Astrophysics Data System (ADS)

    Berlie, Adam; Terry, Ian; Cottrell, Stephen; Hu, Wanbiao; Liu, Yun

    With the emphasis in recent years on understanding novel materials with potential technological applications this work seeks to understand magnetic ordering within the colossal-permittivity material, In+Nb co-doped rutile (TiO2). Evidence for a spin-freezing transition was reported from a step like feature in the dielectic data below 50 K but this was largly glossed over. Within this work we show that below 300 K there is a slowing down of magnetic fluctuations associated with the electronic magnetism due to the defect-dipoles created by the co-doping, but the muon spectroscopy results are strongly suggestive of the behaviour being localised to the edges/interfaces of particles/grains. The TC is strongly dependent on the doping level of the samples that presents novel way to control the magnetism and ultimately magneto-electric coupling within a dielectric material.

  18. Photonic, and photocatalytic behavior of TiO2 mediated by Fe, CO, Ni, N doping and co-doping

    NASA Astrophysics Data System (ADS)

    Wang, Jia; Zhao, Y. F.; Wang, T.; Li, H.; Li, C.

    2015-12-01

    Fe, Co, Ni, or N addition could modulate the photonic and catalytic responses of TiO2 for photocatalysts applications. Their morphologies, structures, compositions and photocatalytic performance in the degradation of methylene blue were characterized by scanning electron microscopy, X-ray diffraction, UV-vis absorption spectroscopy, Raman spectra and X-ray photoelectron spectroscopy. The results showed that dopants affect the electronic transition energies by changing the optical band gap and the impurity absorption peaks of the specimens. Especially, co-doping enhances the visible-light photocatalytic activity of TiO2 by 4-10 times that of pure TiO2, and the Co and N co-doping derives 10-fold photocatalytic activity.

  19. Electrode effects in dielectric spectroscopy measurements on (Nb+In) co-doped TiO2

    NASA Astrophysics Data System (ADS)

    Crandles, D. A.; Yee, S. M. M.; Savinov, M.; Nuzhnyy, D.; Petzelt, J.; Kamba, S.; Prokeš, J.

    2016-04-01

    Recently, several papers reported the discovery of giant permittivity and low dielectric loss in (Nb+In) co-doped TiO2. A series of tests was performed which included the measurement of the frequency dependence of the dielectric permittivity and alternating current (ac) conductivity of co-doped (Nb+In)TiO2 as a function of electrode type, sample thickness, and temperature. The data suggest that the measurements are strongly affected by the electrodes. The consistency between four-contact van der Pauw direct current conductivity measurements and bulk conductivity values extracted from two-contact ac conductivity measurements suggest that the values of colossal permittivity are, at least in part, a result of Schottky barrier depletion widths that depend on electrode type and temperature.

  20. Green up-converted luminescence in (Er3+-Yb3+) co-doped LiNbO3 crystals

    NASA Astrophysics Data System (ADS)

    Stoffel, M.; Rinnert, H.; Kokanyan, E.; Demirkhanyan, G.; Demirkhanyan, H.; Aillerie, M.

    2016-07-01

    Er3+ doped and (Er3+-Yb3+) co-doped LiNbO3 (LN) crystals grown by the Czochralski method are investigated by photoluminescence spectroscopy. Green up-converted luminescence is observed in Er3+ doped LN crystals under 980 nm excitation. This is explained by an energy transfer between two neighboring Er3+ ions. In (Er3+, Yb3+) co-doped LN crystals, the intensity of the green up-converted luminescence can be further enhanced suggesting that Yb3+ ions also contribute to the up-conversion process. Time resolved photoluminescence measurements clearly demonstrate that an efficient energy transfer occurs between Yb3+ and Er3+ ions. A theoretical model taking into account the contribution of both Er3+-Er3+ pairs and Yb3+-Er3+ pairs is able to describe correctly the decay of the up-converted luminescence.

  1. Bioinspired synthesis of nitrogen/sulfur co-doped graphene as an efficient electrocatalyst for oxygen reduction reaction

    NASA Astrophysics Data System (ADS)

    Zhang, Huanhuan; Liu, Xiangqian; He, Guangli; Zhang, Xiaoxing; Bao, Shujuan; Hu, Weihua

    2015-04-01

    Efficient electrocatalyst of oxygen reduction reaction (ORR) is crucial for a variety of renewable energy applications and heteroatom-doped carbon materials have demonstrated promising catalytic performance towards ORR. In this paper we report a bioinspired method to synthesize nitrogen/sulfur (N/S) co-doped graphene as an efficient ORR electrocatalyst via self-polymerization of polydopamine (PDA) thin layer on graphene oxide sheets, followed by reacting with cysteine and finally thermal annealing in Argon (Ar) atmosphere. As-prepared N/S co-doped graphene exhibits significantly enhanced ORR catalytic activity in alkaline solution compared with pristine graphene or N-doped graphene. It also displays long-term operation stability and strong tolerance to methanol poison effect, indicating it a promising ORR electrocatalyst.

  2. First principles study on B/N pairs co-doping zigzag single-walled carbon nanotubes

    NASA Astrophysics Data System (ADS)

    Yao, Xinhua; Li, Kejing; Ye, Jinqian; Shao, Qing Yi

    2016-06-01

    The B/N pairs co-doping (5, 0) single-walled carbon nanotubes (SWCNTs) have been investigated by using density functional theory. We gradually increase B/N doping concentration to simulate the growth of B/N pairs doping. We find that B/N pairs prefer to form a B/N hexagonal ring and then B/N rings successively grow around the axis until they are end to end. All B/N pairs doped tubes are turned to semiconducting and the five BN rings co-doped (5, 0) tube shows the occurrence of magnetism. Moreover, the increase of the doping concentration in a particular law may not change electrical properties obviously.

  3. Significant Enhancement of Water Splitting Activity of N-Carbon Electrocatalyst by Trace Level Co Doping.

    PubMed

    Bayatsarmadi, Bita; Zheng, Yao; Tang, Youhong; Jaroniec, Mietek; Qiao, Shi-Zhang

    2016-07-01

    Replacement of precious metal electrocatalysts with highly active and cost efficient alternatives for complete water splitting at low voltage has attracted a growing attention in recent years. Here, this study reports a carbon-based composite co-doped with nitrogen and trace amount of metallic cobalt (1 at%) as a bifunctional electrocatalyst for water splitting at low overpotential and high current density. An excellent electrochemical activity of the newly developed electrocatalyst originates from its graphitic nanostructure and highly active Co-Nx sites. In the case of carefully optimized sample of this electrocatalyst, 10 mA cm(-2) current density can be achieved for two half reactions in alkaline solutions-hydrogen evolution reaction and oxygen evolution reaction-at low overpotentials of 220 and 350 mV, respectively, which are smaller than those previously reported for nonprecious metal and metal-free counterparts. Based on the spectroscopic and electrochemical investigations, the newly identified Co-Nx sites in the carbon framework are responsible for high electrocatalytic activity of the Co,N-doped carbon. This study indicates that a trace level of the introduced Co into N-doped carbon can significantly enhance its electrocatalytic activity toward water splitting. PMID:27246288

  4. Origin of resolution enhancement by co-doping of scintillators: Insight from electronic structure calculations

    SciTech Connect

    Åberg, Daniel Sadigh, Babak; Schleife, André; Erhart, Paul

    2014-05-26

    It was recently shown that the energy resolution of Ce-doped LaBr{sub 3} scintillator radiation detectors can be crucially improved by co-doping with Sr, Ca, or Ba. Here, we outline a mechanism for this enhancement on the basis of electronic structure calculations. We show that (i) Br vacancies are the primary electron traps during the initial stage of thermalization of hot carriers, prior to hole capture by Ce dopants; (ii) isolated Br vacancies are associated with deep levels; (iii) Sr doping increases the Br vacancy concentration by several orders of magnitude; (iv) Sr{sub La} binds to V{sub Br} resulting in a stable neutral complex; and (v) association with Sr causes the deep vacancy level to move toward the conduction band edge. The latter is essential for reducing the effective carrier density available for Auger quenching during thermalization of hot carriers. Subsequent de-trapping of electrons from Sr{sub La}–V{sub Br} complexes can activate Ce dopants that have previously captured a hole leading to luminescence. This mechanism implies an overall reduction of Auger quenching of free carriers, which is expected to improve the linearity of the photon light yield with respect to the energy of incident electron or photon.

  5. Paramagnetic behavior of Co doped TiO2 nanocrystals controlled by self-purification mechanism

    NASA Astrophysics Data System (ADS)

    Anitha, B.; Khadar, M. Abdul; Banerjee, Alok

    2016-07-01

    Doping in nanocrystals is a challenging process because of the self- purification mechanism which tends to segregate out the dopants resulting in a greater dopant concentration near the surface than at the interior of nanocrystals. In the present work nanocrystals of TiO2 doped with different atom % of Co were synthesized by peroxide gel method. XRD analysis confirmed the tetragonal anatase structure and HRTEM images showed the rod-like morphology of the samples. Raman modes of anatase phase of TiO2 along with weak intensity peaks of Co3O4 for higher Co dopant concentrations were observed for the samples. EPR measurements revealed the presence of cobalt in +2 oxidation state in the TiO2 matrix. SQUID measurements indicated paramagnetic behavior of the Co doped TiO2 nanocrystals. The paramagnetic behavior is attributed to an increased concentration of Co2+ ions and an increased presence of Co3O4 phase near the surface of the TiO2 nanocrystals due to self-purification mechanism.

  6. Visible-Light-Induced Bactericidal Activity of Titanium Dioxide Co-doped with Nitrogen and Silver

    PubMed Central

    Wu, Pinggui; Xie, Rongcai; Imlay, Kari; Shang, Jian-Ku

    2011-01-01

    Titanium dioxide nanoparticles co-doped with nitrogen and silver (Ag2O/TiON) were synthesized by the sol-gel process and found to be an effective visible light driven photocatalyst. The catalyst showed strong bactericidal activity against Escherichia coli (E. coli) under visible light irradiation (λ> 400 nm). In x-ray photoelectron spectroscopy and x-ray diffraction characterization of the samples, the as-added Ag species mainly exist as Ag2O. Spin trapping EPR study showed Ag addition greatly enhanced the production of hydroxyl radicals (•OH) under visible light irradiation. The results indicate that the Ag2O species trapped eCB− in the process of Ag2O/TiON photocatalytic reaction, thus inhibiting the recombination of eCB− and hVB+ in agreement with the stronger photocatalytic bactericidal activity of Ag2O/TiON. The killing mechanism of Ag2O/TiON under visible light irradiation is shown to be related to oxidative damages in the forms of cell wall thinning and cell disconfiguration. PMID:20726520

  7. Combinatorial optimization of La, Ce-co-doped pyrosilicate phosphors as potential scintillator materials.

    PubMed

    Wei, Qinhua; Wan, Jieqiong; Liu, Guanghui; Zhou, Zhenzhen; Yang, Hua; Wang, Jiacheng; Liu, Qian

    2015-04-13

    A combinatorial method was employed to rapidly screen the effects of La, Ce-co-doping on the luminescent properties of Gd2Si2O7 pyrosilicate using an 8 × 8 library. The candidate formulations (Gd1-x-yLax)2Si2O7:Ce2y were evaluated by luminescence pictures under ultraviolet excitation. The optimal composition was found to be (Gd0.89La0.1)2Si2O7:Ce0.02 after scaled-up preparation and detailed characterization of powder samples, which shows an excellent light output under both ultraviolet and X-ray excitation (about 5.43 times of commercial YAG:Ce powders). The XRD results indicate that the phase structure sequence is tetragonal-orthorhombic-triclinic for different calcination temperatures and doping ions. The (Gd0.89La0.1)2Si2O7:Ce0.02 powder sample also demonstrated excellent temperature stability of luminescence up to 200 °C and a short decay time of several tens of nanoseconds, suggesting that this may represent a new kind of scintillation material, such as single crystals, ceramics, glass, or phosphors. PMID:25679047

  8. Room temperature magnetization in Co-doped anatase phase of TiO2

    NASA Astrophysics Data System (ADS)

    Karimipour, Masoud; Mageto, Maxwel Joel; Etefagh, Reyhaneh; Azhir, Elahe; Mwamburi, Mghendi; Topalian, Zareh

    2013-01-01

    CoxTi1-xO2 films were deposited by spray pyrolysis technique on Si(1 0 0) substrates at 475 °C. A hydro-alcoholic solution containing titanium (iv) isopropoxide and Co(NO3)2 with various Co doping levels from x = 0-0.015 in solution was used as spray solution. Grazing incident angle of X-ray diffraction illustrates that the CoxTi1-xO2 films are single phase and polycrystal with mixed orientations. Study of surface morphology of the films by atomic force microscope reveals that the annealing atmosphere does not significantly affect the grain size and the microstructure of the films. This study provides further insight into the importance of annealing atmosphere on magnetization of the films. Room temperature magneto-optical Kerr measurement was employed in polar mode. A hysteresis loop and a paramagnetic behavior have been recorded for samples annealed in H2 ambient gas and air, respectively. Chemical composition analysis by X-ray photo-electron spectroscopy showed that Co atoms are bounded to oxygen and no metallic clusters are present. Moreover, it indicates the formation of high spin Co2+ for the sample x = 0.008 annealed in H2 ambient gas. The origin of magnetization can be attributed to the contribution of oxygen vacancies in the spin polarization of the structure.

  9. Thermal analysis and temperature dependent dielectric responses of Co doped anatase TiO2 nanoparticles

    NASA Astrophysics Data System (ADS)

    Alamgir, Khan, Wasi; Ahmad, Shabbir; Ahammed, Nashiruddin; Naqvi, A. H.

    2015-05-01

    Nanoparticles (NPs) of pure and 5 mol % cobalt doped TiO2 synthesized through acid modified sol-gel method were characterized to understand their thermal, structural, morphological, and temperature dependent dielectric properties. Thermogravimetric analysis (TGA) has been used for thermal studies and indicates the weight loss in two steps due to the removal of residual organics. X-ray diffraction study was employed to confirm the formation of single anatase phase with tetragonal symmetry for both pure and 5 mol % Co doped TiO2 NPs. The average crystallite size of both samples was calculated from the Scherrer's formula and was found in the range from 9-11 nm. TEM micrographs of these NPs reflect their shape and distribution. The dielectric constant (ɛ'), dielectric loss (tanδ) and ac conductivity (σac) were also studied as a function of temperature at different frequencies. Electrical responses of the synthesized NPs have been analyzed carefully in the framework of relevant models. It is also noticed that the dielectric constant (ɛ') of the samples found to decrease with increasing frequency but increases with increasing temperature up to a particular value and then sharply decreases. Temperature variation of dielectric constant exhibits step like escalation and shows relaxation behavior. Study of dielectric properties shows dominant dependence on the grain size as well as Co ion incorporation in TiO2.

  10. Microstructure of Co-doped TiO₂ (110) Rutile by Ion Implantation

    SciTech Connect

    Wang, Chong M.; Shutthanandan, V.; Thevuthasan, Suntharampillai; Droubay, Timothy C.; Chambers, Scott A.

    2005-04-01

    Co-doped rutile TiO₂ was synthesized by injecting Co ions into single crystal rutile TiO₂ using high energy ion implantation. Microstructures of the implanted specimens were studied in detail using high-resolution transmission electron microscopy (HRTEM), energy dispersive x-ray spectroscopy (EDS), electron diffraction, and HRTEM image simulations. The spatial distribution and conglomeration behavior of the implanted Co ions, as well as the point defect distributions induced by ion implantation, show strong dependences on implantation conditions. Uniform distribution of Co ions in the rutile TiO₂ lattice was obtained by implanting at 1075 K with a Co ion fluence of 1.25x10¹⁶ Co/cm². Implanting at 875 K leads to the formation of Co metal clusters. The precipitated Co metal clusters and surrounding TiO₂ matrix exhibit the orientation relationships Co<110>//TiO₂[001] and Co{111}//TiO₂(110). A structural model representing the interface between Co metal clusters and TiO₂ is developed based on HRTEM imaging and image simulations.

  11. Microstructure of Co-doped TiO{sub 2}(110) rutile by ion implantation

    SciTech Connect

    Wang, C.M.; Shutthanandan, V.; Thevuthasan, S.; Droubay, T.; Chambers, S.A.

    2005-04-01

    Co-doped rutile TiO{sub 2} was synthesized by injecting Co ions into single crystal rutile TiO{sub 2} using high energy ion implantation. Microstructures of the implanted specimens were studied in detail using high-resolution transmission electron microscopy (HRTEM), energy dispersive x-ray spectroscopy, electron diffraction, and HRTEM image simulations. The spatial distribution and conglomeration behavior of the implanted Co ions, as well as the point defect distributions induced by ion implantation, show strong dependences on implantation conditions. Uniform distribution of Co ions in the rutile TiO{sub 2} lattice was obtained by implanting at 1075 K with a Co ion fluence of 1.25x10{sup 16} Co/cm{sup 2}. Implanting at 875 K leads to the formation of Co metal clusters. The precipitated Co metal clusters and surrounding TiO{sub 2} matrix exhibit the orientation relationships Co<110> parallel TiO{sub 2}[001] and Co{l_brace}111{r_brace} parallel TiO{sub 2}(110). A structural model representing the interface between Co metal clusters and TiO{sub 2} is developed based on HRTEM imaging and image simulations.

  12. Enhanced ferromagnetic properties in Ho and Ni co-doped BiFeO3 ceramics

    NASA Astrophysics Data System (ADS)

    Park, J. S.; Yoo, Y. J.; Hwang, J. S.; Kang, J.-H.; Lee, B. W.; Lee, Y. P.

    2014-01-01

    The magnetic properties of polycrystalline Bi1-xHoxFe1-yNiyO3 (x = 0, 0.1; y = 0, 0.03), which were prepared by the solid-state method, have been investigated. The powder X-ray diffraction reveals that all the samples are polycrystalline and show rhombohedral perovskite structure. The micro-Raman scattering studies confirm that Bi0.9Ho0.1Fe0.97Ni0.03O3 has a compressive lattice distortion induced by the simultaneous substitution of Ho and Ni ions at A and B-sites, respectively. From the magnetization dependences at room temperature, Bi0.9Ho0.1Fe0.97Ni0.03O3 has enhanced magnetization (0.2280 emu/g) and low coercive field (280 Oe). It was revealed that the Ni dopant plays an important role for the improved ferromagnetic properties and the Ho dopant favors the magnetic exchange interactions in the co-doped ceramic.

  13. A first-principles study of co-doping in lanthanum bromide

    NASA Astrophysics Data System (ADS)

    Aberg, Daniel; Sadigh, Babak; Schleife, Andre; Erhart, Paul

    2015-03-01

    It was recently shown that the energy resolution of Ce-doped LaBr3 scintillator radiation detectors can be crucially improved by co-doping with Sr, Ca, or Ba. Here we outline a mechanism for this enhancement on the basis of electronic structure calculations. We show that Sr dopants create and bind to Br vacancies, resulting in stable neutral complexes. The association with Sr causes the deep vacancy level to move toward the conduction band edge. This is essential for reducing the effective carrier density available for Auger quenching during thermalization of hot carriers. Subsequent de-trapping of electrons from the complexes can activate Ce dopants that have previously captured a hole leading to luminescence. This mechanism implies an overall reduction of Auger quenching of free carriers, which is expected to improve the linearity of the photon light yield with respect to the energy of incident electron or photon. Optical properties of the Ce-Sr-vacancy triple complex are discussed and compared to experiment. Prepared by LLNL under Contract DE-AC52-07NA27344. Support from the National Nuclear Security Administration Office of Nonproliferation Research and Development (NA-22) is acknowledged.

  14. Boron and nitrogen co-doped porous carbon and its enhanced properties as supercapacitor

    NASA Astrophysics Data System (ADS)

    Guo, Hongliang; Gao, Qiuming

    Boron and nitrogen co-doped porous carbons (BNCs) were prepared through a facile procedure using citric acid, boric acid and nitrogen as C, B and N precursors, respectively. The BNC samples were characterized by X-ray diffraction (XRD), X-ray photoelectron spectroscopy (XPS), and nitrogen sorption at 77 K. Cyclic voltammetry and galvanostatic charge/discharge experiments were adopted to investigate their electrochemical behaviors. The BNC-9 and BNC-15 samples with high specific surface areas of 894 and 726 m 2 g -1 showed the large specific capacitance up to 268 and 173 F g -1, respectively, with the current of 0.1 A g -1. When the current was set as 1 A g -1, the energy densities were 3.8 and 3.0 Wh kg -1 and the power densities were 165 and 201 W kg -1 for BNC-9 and BNC-15, respectively. Thus, BNC-15 is more suitable to apply in high-power-demanded occasion, while BNC-9 tends to store more energy.

  15. Visible light carrier generation in co-doped epitaxial titanate films

    NASA Astrophysics Data System (ADS)

    Comes, Ryan B.; Smolin, Sergey Y.; Kaspar, Tiffany C.; Gao, Ran; Apgar, Brent A.; Martin, Lane W.; Bowden, Mark E.; Baxter, Jason B.; Chambers, Scott A.

    2015-03-01

    Perovskite titanates such as SrTiO3 (STO) exhibit a wide range of important functional properties, including ferroelectricity and excellent photocatalytic performance. The wide optical band gap of titanates limits their use in these applications; however, making them ill-suited for integration into solar energy harvesting technologies. Our recent work has shown that by doping STO with equal concentrations of La and Cr, we can enhance visible light absorption in epitaxial thin films while avoiding any compensating defects. In this work, we explore the optical properties of photoexcited carriers in these films. Using spectroscopic ellipsometry, we show that the Cr3+ dopants, which produce electronic states immediately above the top of the O 2p valence band in STO reduce the direct band gap of the material from 3.75 eV to 2.4-2.7 eV depending on doping levels. Transient reflectance spectroscopy measurements are in agreement with the observations from ellipsometry and confirm that optically generated carriers are present for longer than 2 ns. Finally, through photoelectrochemical methylene blue degradation measurements, we show that these co-doped films exhibit enhanced visible light photocatalysis when compared to pure STO.

  16. Study of cation magnetic moment directions in Cr (Co) doped nickel ferrites

    NASA Astrophysics Data System (ADS)

    Lang, L. L.; Xu, J.; Qi, W. H.; Li, Z. Z.; Tang, G. D.; Shang, Z. F.; Zhang, X. Y.; Wu, L. Q.; Xue, L. C.

    2014-09-01

    Powder samples of the ferrites MxNi1-xFe2O4 (M = Cr, Co and 0.0 ≤ x ≤ 0.3) were prepared using a chemical co-precipitation method. X-ray diffraction analysis showed that the two series of samples had a single-phase cubic spinel structure. It was found that the magnetic moments (μexp) per formula of samples measured at 10 K decreased when Cr substituted for Ni, but increased when Co substituted for Ni, in spite of the fact that the magnetic moments of Cr2+ (4 μB) and Co2+ (3 μB) are higher than that of Ni2+ (2 μB). With the assumption that the magnetic moments of Cr2+ and Cr3+ lie antiparallel to those of the Fe, Co, and Ni cations in the same sublattices of spinel ferrites, the dependences on the Cr (Co) doping level of the sample magnetic moments at 10 K were fitted successfully, using the quantum-mechanical potential barrier model earlier proposed by our group. For the two series of samples, the fitted magnetic moments are close to the experimental results.

  17. Visible light carrier generation in co-doped epitaxial titanate films

    SciTech Connect

    Comes, Ryan B.; Smolin, Sergey Y.; Kaspar, Tiffany C.; Gao, Ran; Apgar, Brent A.; Martin, Lane W.; Bowden, Mark E.; Baxter, Jason; Chambers, Scott A.

    2015-03-02

    Perovskite titanates such as SrTiO3 (STO) exhibit a wide range of important functional properties, including high electron mobility, ferroelectricity—which may be valuable in photovoltaic applications—and excellent photocatalytic performance. The wide optical band gap of titanates limits their use in these applications, however, making them ill-suited for integration into solar energy harvesting technologies. Our recent work has shown that by doping STO with equal concentrations of La and Cr we can enhance visible light absorption in epitaxial thin films while avoiding any compensating defects. In this work, we explore the optical properties of photoexcited carriers in these films. Using spectroscopic ellipsometry, we show that the Cr3+ dopants, which produce electronic states immediately above the top of the O 2p valence band in STO reduce the direct band gap of the material from 3.75 eV to between 2.4 and 2.7 eV depending on doping levels. Transient reflectance measurements confirm that optically generated carriers have a recombination lifetime comparable to that of STO and are in agreement with the observations from ellipsometry. Finally, through photoelectrochemical yield measurements, we show that these co-doped films exhibit enhanced visible light photocatalysis when compared to pure STO.

  18. Visible light carrier generation in co-doped epitaxial titanate films

    SciTech Connect

    Comes, Ryan B. Kaspar, Tiffany C.; Chambers, Scott A.; Smolin, Sergey Y.; Baxter, Jason B.; Gao, Ran; Apgar, Brent A.; Martin, Lane W.; Bowden, Mark E.

    2015-03-02

    Perovskite titanates such as SrTiO{sub 3} (STO) exhibit a wide range of important functional properties, including ferroelectricity and excellent photocatalytic performance. The wide optical band gap of titanates limits their use in these applications; however, making them ill-suited for integration into solar energy harvesting technologies. Our recent work has shown that by doping STO with equal concentrations of La and Cr, we can enhance visible light absorption in epitaxial thin films while avoiding any compensating defects. In this work, we explore the optical properties of photoexcited carriers in these films. Using spectroscopic ellipsometry, we show that the Cr{sup 3+} dopants, which produce electronic states immediately above the top of the O 2p valence band in STO reduce the direct band gap of the material from 3.75 eV to 2.4–2.7 eV depending on doping levels. Transient reflectance spectroscopy measurements are in agreement with the observations from ellipsometry and confirm that optically generated carriers are present for longer than 2 ns. Finally, through photoelectrochemical methylene blue degradation measurements, we show that these co-doped films exhibit enhanced visible light photocatalysis when compared to pure STO.

  19. Growth and Characterization of Co-Doped Fluorine and Antimony in Tin Oxide Thin Films Obtained by Ultrasonic Spray Pyrolysis

    NASA Astrophysics Data System (ADS)

    Gaewdang, Thitinai; Wongcharoen, Ngamnit

    Fluorine (F)-doped, antimony (Sb)-doped, fluorine and antimony co-doped tin oxide (SnO2) thin films were prepared by ultrasonic spray pyrolysis technique using SnCl2, NH4F and SbCl3 as precursors of Sn, F and Sb elements respectively. F and Sb doping concentrations carried out from 1 to 20 wt% and 1 to 4 wt% in F-doped and Sb-doped SnO2 films respectively. In F and Sb co-doped SnO2 films, the proportions of F and Sb to Sn in starting solution were 15 and 2 wt% respectively. XRD patterns showed that the preferred orientation of SnO2:F, SnO2:Sb and SnO2:F, Sb is dependent on the doping concentration. The variation of doping concentration and preferred orientation of the films was reflected in their morphology as investigated by SEM. The electrical properties of the films were performed by Hall effect measurements in van der Pauw configuration. The minimum resistivity values of SnO2:F and SnO2:Sb were found in the films doped with 15 wt% of F and 2 wt% of Sb. However, The minimum of resistivity value of F and Sb co-doped SnO2 films is not better than neither the one of F-doped nor the one of Sb-doped SnO2 films. The optical transmission of SnO2:F films was found to increase with increasing in F doping concentration. Whereas the optical transmission of SnO2:Sb was found to decrease with increasing in Sb concentration. The F and Sb co-doped SnO2 films annealed in three different conditions at 500°C show the lower transmission values than the value obtained in the as-prepared SnO2:F, Sb films.

  20. Preparation and characterization of zinc and copper co-doped WO3 nanoparticles: Application in photocatalysis and photobiology.

    PubMed

    Mohammadi, Sanaz; Sohrabi, Maryam; Golikand, Ahmad Nozad; Fakhri, Ali

    2016-08-01

    In this study, pure, Zn, Cu, Zn,Cu co-doped WO3 nanoparticles samples were prepared by precipitation and co-precipitation methods. These nanoparticles were characterized by field emission scanning electron microscopy (FE-SEM), X-ray diffraction (XRD), energy dispersive X-ray spectrometer (EDX), Dynamic light scattering (DLS), UV-visible and photoluminescence (PL) spectroscopy. The synthesized pure, Zn, Cu, Zn,Cu co-doped WO3 nanoparticles have smart optical properties and average sizes with 3.2, 3.12, 3.08 and 2.97eV of band-gap, 18.1, 23.2, 25.7 and 30.2nm, respectively. Photocatalytic activity of four nanoparticles was studying towards degradation of gentamicin antibiotic under ultraviolet and visible light irradiation. The result showed that Zn,Cu co-doped WO3 possessed high photocatalytic activity. The photocatalytic activity of WO3 nanoparticles could be remarkably increased by doping the Zn and Cu impurity. This can be attributed to the fact that the red shift of absorption edge and the trapping effect of the mono and co-doped WO3 nanoparticles. The research result presents a general and effective way to prepare different photocatalysts with enhanced visible and UV light-driven photocatalytic performance. Antibacterial activity of four different WO3 nanoparticles against Escherichia coli bacterium has been assessed by the agar disc method under light irradiation and dark medium. It is concluded from the present findings that WO3 nanoparticles can be used as an efficient antibacterial agent. PMID:27262854

  1. Understanding electronic and optical properties of anatase TiO2 photocatalysts co-doped with nitrogen and transition metals.

    PubMed

    Meng, Qingsen; Wang, Tuo; Liu, Enzuo; Ma, Xinbin; Ge, Qingfeng; Gong, Jinlong

    2013-06-28

    This paper describes an investigation into the general trend in electronic properties of anatase TiO2 photocatalysts co-doped with transition metals and nitrogen employing first-principles density functional theory. Fourteen different transition metals (M), including Sc, V, Cr, Mn, Fe, Co, Ni, Cu, Zn, Y, Zr, Nb, Mo, and Cd, have been considered. The characteristic band structures of the co-doping systems involving the transition metal series are presented. Our results indicate that the absorption edges of TiO2 are shifted to the visible-light region upon introduction of dopants, due to the reduced conduction band minimum (CBM) and the formation of impurity energy levels (IELs) in the band gap. These IELs are primarily formed from (a) the anti-bonding orbitals of the M-O (M indicates the doped transition metal) bonds, (b) the unsaturated nonbonding d orbitals of the doped transition metal (mainly d(xy), d(yz), and d(xz)), and (c) the Ti-O bonding/Ti-N anti-bonding orbitals of the bond next to the doped transition metal. When the valence d electrons of the doped metal are between 3 and 7, all three types of IELs appear in the band gap of the (M, N) co-doped systems. For systems doped with a metal of more than 7 valence electrons, only types (a) and (c) of IELs as well as the unoccupied pz state of N are observed. Based on our analysis, we propose that the co-doping systems such as (V, N), (Cr, N), and (Mn, N), which have the IELs with a significant bandwidth, are of great potential as candidates for photovoltaic applications in the visible light range. PMID:23652827

  2. Origin of enhanced multiferroic properties in Dy and Co co-doped BiFeO3 ceramics

    NASA Astrophysics Data System (ADS)

    Yoo, Y. J.; Hwang, J. S.; Lee, Y. P.; Park, J. S.; Rhee, J. Y.; Kang, J.-H.; Lee, K. W.; Lee, B. W.; Seo, M. S.

    2015-01-01

    Structural, magnetic and ferroelectric properties of polycrystalline BiFeO3, Bi0.9Dy0.1FeO3, BiFe0.97Co0.03O3 and Bi0.9Dy0.1Fe0.97Co0.03O3, which were prepared by solid-state method, have been investigated. The X-ray diffraction (XRD) patterns reveal that all the samples are in single phase and show rhombohedrally distorted perovskite structure with R3c space group. Both XRD and Raman-scattering studies show that Dy and Co co-doped sample has a compressive lattice distortion induced by co-substitution of Dy and Co ions at the A and the B sites, respectively. Dy and Co co-doping favors weak ferromagnetism ordering with evident magnetic hysteresis loop and enhances magnetization values at room temperature. Ferroelectric hysteresis loop for Dy and Co co-doped sample shows the nearly saturated polarization at 40 kV/cm and large remnant polarization. Dy dopant is prominent in the reduced leakage current density, while Co dopant is remarkable in the improved remnant magnetization in Bi0.9Dy0.1Fe0.97Co0.03O3 ceramic. By using a simple model, it was found that the anharmonicity of canted spiral cycloidal spin structure was responsible for the weak ferromagnetism of pure BiFeO3, and the enhanced magnetization in Co-doped sample was attributed to the transition from the incommensurate cycloidal spiral spin structure towards the G-type canted collinear antiferromagnetic structure.

  3. Effect of Co doping on structural, optical, magnetic and dielectric properties of Bi{sub 2}Fe{sub 4}O{sub 9}

    SciTech Connect

    Mohapatra, S. R.; Sahu, B.; Singh, A. K.; Kaushik, S. D.

    2015-06-24

    Polycrystalline Bi{sub 2}Fe{sub 4}O{sub 9} and 2% Co doped Bi{sub 2}Fe{sub 4}O{sub 9} were prepared by solid state reaction route. X-ray diffraction (XRD) result reveals that there is no change in the crystal structure due to Co doping and the compound has orthorhombic structure. UV-visible spectroscopy confirms the decrease in band gap due Co doping. Zero field cooled magnetization measurement at 100 Oe magnetic field shows substantial decrease in the magnetic transition temperature. Room temperature frequency dependent dielectric permittivity at 1V DC bias shows ∼10% increase in Co doped sample with respect to pure Bi{sub 2}Fe{sub 4}O{sub 9}.

  4. Effects of acceptor-donor complexes on electronic structure properties in co-doped TiO2: A first-principles study

    NASA Astrophysics Data System (ADS)

    Zhang, L.; Cai, L. L.; Yuan, X. B.; Hu, G. C.; Ren, J. F.

    2016-07-01

    We theoretically investigate the doping effects induced by impurity complexes on the electronic structures of anatase TiO2 based on the density functional theory. Mono-doping and co-doping effects are discussed separately. The results show that the impurity doping can make the band-edges shift. The induced defect levels in the band gaps by impurity doping reduce the band gap predominantly. The compensated acceptor-donor pairs in the co-doped TiO2 will improve the photoelectrochemical activity. From the calculations, it is also found that (S+Zr)-co-doped TiO2 has the ideal band gap and band edge, at the same time, the binding energy is higher than other systems, so (S+Zr)-co-doping in TiO2 is more promise in photoelectrochemical experiments.

  5. Single phase formation of Co-implanted ZnO thin films by swift heavy ion irradiation: Optical studies

    SciTech Connect

    Kumar, Ravi; Singh, Fouran; Angadi, Basavaraj; Choi, Ji-Won; Choi, Won-Kook; Jeong, Kwangho; Song, Jong-Han; Khan, M. Wasi; Srivastava, J. P.; Kumar, Ajay; Tandon, R. P.

    2006-12-01

    Low temperature photoluminescence and optical absorption studies on 200 MeV Ag{sup +15} ion irradiated Co-implanted ZnO thin films were studied. The Co clusters present in as implanted samples were observed to be dissolved using 200 MeV Ag{sup +15} ion irradiation with a fluence of 1x10{sup 12} ions/cm{sup 2}. The photoluminescence spectrum of pure ZnO thin film was characterized by the I{sub 4} peak due to the neutral donor bound excitons and the broad green emission. The Co-doped ZnO films show three sharp levels and two shoulders corresponding to 3t{sub 2g} and 2e{sub g} levels of crystal field splitted Co d orbitals, respectively. The ultraviolet-visible absorption spectroscopy also shows the systematic variation of band gap after 200 MeV Ag{sup +15} ion irradiation.

  6. Preparation and photocatalytic activity of B, Ce Co-doped TiO2 hollow fibers photocatalyst

    NASA Astrophysics Data System (ADS)

    Qiu, Jingping; Sun, Xiaogang; Xing, Jun; Liu, Xiaobo

    2014-07-01

    A series of B, Ce co-doped TiO2 (B, Ce-TiO2) photocatalytic materials with a hollow fiber structure were successfully prepared by template method using boric acid, ammonium ceric nitrate and tetrabutyltitanate as precursors and cotton fibers as template, followed by calcination at 500°C in an N2 atmosphere for 2 h. Scanning electron microscopy (SEM), X-ray diffraction (XRD), nitrogen adsorption-desorption measurements, and UV-visible spectroscopy (UV-Vis) were employed to characterize the morphology, crystal structure, surface structure, and optical absorption properties of the samples. The photocatalytic performance of the samples was studied by photodegradation phenol in water under UV light irradiation. The results showed that the TiO2 fiber materials have hollow structures, and the fiber structure materials showed better photocatalytic properties for the degradation of phenol than pure TiO2 under UV light. In the experiment condition, the photocatalytic activity of B, Ce co-doped TiO2 fibers was optimal of all the prepared samples. In addition, the possibility of cyclic usage of B, Ce co-doped TiO2 fiber photocatalyst was also confirmed, the photocatalytic activity of TiO2 fibers remained above 90% of that of the fresh sample after being used four times. The material was easily removed by centrifugal separation from the medium. It can therefore be potentially applied for the treatment of water contaminated by organic pollutants.

  7. Optical and magnetic properties of Co-doped CuO flower/plates/particles-like nanostructures.

    PubMed

    Basith, N Mohamed; Vijaya, J Judith; Kennedy, L John; Bououdina, M; Hussain, Shamima

    2014-03-01

    In this study, pure and Co-doped CuO nanostructures (0.5, 1.0, 1.5, and 2.0 at wt% of Co) were synthesized by microwave combustion method. The prepared samples were characterized by X-ray diffraction (XRD), high resolution scanning electron microscopy (HR-SEM), energy dispersive X-ray analysis (EDX), diffuse reflectance spectroscopy (DRS), photoluminescence (PL) spectroscopy and vibrating sample magnetometry (VSM). Powder X-ray diffraction patterns refined by the Rietveld method indicated the formation of single-phase monoclinic structure. The surface morphology and elemental analysis of Co-doped CuO nanostructures were studied by using HR-SEM and EDX. Interestingly, the morphology was found to change considerably from nanoflowers to nanoplates then to nanoparticles with the variation of Co concentration. The optical band gap calculated using DRS was found to be 2.1 eV for pure CuO and increases up to 3.4 eV with increasing cobalt content. Photoluminescence measurements also confirm these results. The magnetic measurements indicated that the obtained nanostructures were ferromagnetic at room temperature with an optimum value of saturation magnetization at 1.0 wt.% of Co-doped CuO, i.e., 970 micro emu/g. PMID:24745266

  8. Near-infrared emission and energy transfer in tellurite glasses co-doped with erbium and thulium ions

    NASA Astrophysics Data System (ADS)

    Zmojda, Jacek; Kochanowicz, Marcin; Ragin, Tomasz; Dorosz, Dominik; Sitarz, Maciej

    2014-05-01

    In the paper optical properties of 40TeO2 - 20GeO2 - 30(PbO - PbF2)- 10(BaO - Nb2O5 - LaF3) glass system co-doped with Er3+/Tm3+ ions were investigated. The maximum of phonon energy at 790cm-1 in fabricated tellurite glass which was determined by FTIR measurements. Optimisation of glass composition led to the emission at 1820 nm which was observed in results of energy transfer (ET) between Er3+and Tm3+ions under the optical exciting at 976 nm. In order to determine the optimal conditions of ET between exited energy levels of co-doped RE ionsthe dependence of the near-infrared emission upon the thulium ions concentration was studied. In result of that broadband emission in the range from1500 to 1900 nm was achieved owing to the superposition of electronic transition in Er3+ (4I13/2 → 4I15/2) and Tm3+ (3F4 → 3H6) ions.The highest efficiency of energy transfer was obtained in glass co-doped with 0.2Er2O3/0.3 Tm2O3.

  9. Gain and noise figure enhancement of Er+3/Yb+3 co-doped fiber/Raman hybrid amplifier

    NASA Astrophysics Data System (ADS)

    Mahran, O.

    2016-02-01

    An Er/Yb co-doped fiber/Raman hybrid amplifier (HA) is proposed and studied theoretically and analytically to improve the gain and noise figure of optical amplifiers. The calculations are performed under a uniform dopant and steady-state conditions. The initial energy transfer efficiency for Er/Yb co-doped fiber amplifier (EYDFA) is introduced, while the amplified spontaneous emission (ASE) is neglected. The glass fiber used for both Er/Yb and Raman amplifiers is phosphate. Different pump powers are used for both EYDFA and RA with 1 μW input signal power, 1 m length of Er/Yb amplifier and 25 km length of Raman amplifier (RA). The proposed model is validated for Er/Yb co-doped amplifier and Raman amplifier separately by comparing the calculating results with the experimental data. A high gain and low noise figure at 200 mW Raman pump power and 500 mW Er/Yb pump power are obtained for the proposed HA as compared with the experimental results of EYDFA, Raman amplifier and the EDFA/Raman hybrid amplifier.

  10. Structural, Optical, and Magnetic Properties of Solution-Processed Co-Doped ZnS Thin Films

    NASA Astrophysics Data System (ADS)

    Goktas, A.; Mutlu, İ. H.

    2016-07-01

    Co-doped ZnS thin films have been grown on glass substrates using solution-processing and dip-coating techniques, and the impact of the Co doping level (0% to 5%) and film thickness on certain characteristics examined. X-ray diffraction study revealed that all the films possessed hexagonal crystal structure. Energy-dispersive x-ray analysis confirmed presence of Zn, Co, and S in the samples. Scanning electron microscopy showed that the film surface was homogeneous and dense with some cracks and spots. X-ray photoelectron spectroscopy confirmed introduction and integration of Co2+ ions into the ZnS thin films. Compared with undoped ZnS, optical studies indicated a reduction in optical bandgap energy (E g) while the refractive index (n), extinction coefficient (k), and dielectric constants (ɛ 1, ɛ 2) increased with film thickness (t) and Co doping level (except for 5%). Photoluminescence spectra showed enhanced luminescence intensity as the Co concentration was increased, while the dependence on t showed an initial increase followed by a decrease. The origin of the observed low-temperature (5 K and 100 K) ferromagnetic order may be related to point defects such as zinc vacancies, zinc interstitials, and sulfide vacancies or to the grain-boundary effect.

  11. Structural, optical, and ferromagnetic properties of Co-doped TiO2 films annealed in vacuum

    NASA Astrophysics Data System (ADS)

    Xu, Jianping; Shi, Shaobo; Li, Lan; Zhang, Xiaosong; Wang, Yaxin; Chen, Ximing; Wang, Jianfeng; Lv, Liya; Zhang, Fengming; Zhong, Wei

    2010-03-01

    Polycrystalline anatase Ti1-xCoxO2 (x =0-0.06) films have been fabricated by sol-gel spin coating. The effects of Co doping on the structural, optical, and magnetic properties are investigated. It is shown that oxygen vacancies and/or defects in the films are generated during thermal treatment in vacuum. Co doping reduces crystal quality and inhibits crystalline grain growth. Due to the introduction of Co, photoluminescence (PL) spectra become weak and the band gap emission has a blueshift. PL spectra reveal that the solubility of Co is lower than 0.02. At 300 K, the saturated magnetization is around 1.8 μB/Co, which is independent of the concentration of Co. This value is approximately equivalent to the average magnetic moment of bulk metallic cobalt (1.75 μB/Co). Zero-field-cooling/field-cooling measurements indicate that room temperature ferromagnetism in Co-doped TiO2 films is not an intrinsic property of the material. The presence of Co metal is identified by x-ray photoelectron spectroscopy and scanning electron microscopy.

  12. Microstructure and magnetism of sol-gel synthesized Co-doped PbPdO2 nanograin film

    NASA Astrophysics Data System (ADS)

    Song, T. T.; Tang, F. L.; Su, H. L.; Chuang, P. Y.; Liu, J.; Mei, C.; Huang, S. Y.; Lee, M. K.; Huang, J. C. A.; Wu, Y. C.

    2016-06-01

    The single-phase body-centered-orthorhombic-structured Co-doped PbPdO2 thin film was obtained using the sol-gel spin-coating method and an oxidation treatment. The film had a nanograin microstructure with an average grain size of about 56 nm and a thickness of about 150 nm. The adoption of a moderate calcination temperature of 650 °C was found to be very important for preparing the single-phase-PbPdO2-based film with a high crystalline quality. The magnetic studies exhibited that the ferromagnetism and the paramagnetism coexist within the formed Co-doped PbPdO2 film and the ferromagnetism can be maintained above room temperature. The saturation magnetization of the ferromagnetism increasing with the temperature, as the peculiar characteristic of the spin gapless semiconductor, was found within the film. The investigation on the film's X-ray absorption near-edge structure revealed that the ferromagnetism of the Co-doped PbPdO2 is intrinsic.

  13. Analysis of thermal and structural properties of germanate glasses co-doped with Yb3+/Tb3+ ions

    NASA Astrophysics Data System (ADS)

    Zmojda, J.; Kochanowicz, M.; Miluski, P.; Dorosz, D.; Jelen, P.; Sitarz, M.

    2014-10-01

    In the work the new glass compositions in the GeO2-GaO-BaO system have been prepared and thermal, structural properties of in germanate glasses co-doped with Yb3+/Tb3+ions were studied. Glasses were obtained by conventional high-temperature melt-quenching technique. The study of the crystallization kinetics processes of glasses co-doped with 0.7Yb2O3:0.7Tb2O3 was performed with DSC measurements. The activation energies have been calculated using Freedman analysis and verified with the Flynn-Wall-Ozawa method. In this order, the DSC curves have been registered with different heating rates, between 5 and 15 degrees/min. The structure of fabricated glasses has been studied by infrared and Raman spectroscopes. The effect of heat treatment on the structural properties was determined. In all glass samples the dominated infrared absorbance band at 800 cm-1 corresponds to asymmetric stretching motions of GeO4 tetrahedra containing bridging (Ge-O(Ge)) and non-bridging (Ge-O-) oxygens. Additionally, the influence of heat treatment on the luminescent properties was evaluated. Strong luminescence at 489, 543, 586 and 621 nm corresponding to 5D4 → 7FJ (J = 6, 5, 4, 3) transitions was measured. The highest upconversion emission intensity was obtained in the germanate glass co-doped with 0.7Yb2O3/0.7Tb2O3.

  14. Selective substitution and tetragonality by Co-doping of dysprosium and thulium on dielectric properties of barium titanate ceramics

    NASA Astrophysics Data System (ADS)

    Kim, Jungdae; Kim, Dowan; Kim, Jinseong; Kim, Yong-Nam; Hui, K. N.; Lee, Heesoo

    2011-06-01

    Barium titanate (BaTiO3) ceramics co-doped with rare-earth elements were investigated in terms of selective substitution and tetragonality. The dielectrics were designed by addition of various Dy2O3 and Tm2O3 contents, for a total of 1 mol. % concentration, and analyzed in a temperature range from -55°C to 150°C. The dielectric constant of the 0.7 mol. % Dy2O3 and the 0.3 mol. % Tm2O3 co-doped BaTiO3 was 2250, which was about 27% higher than those of specimens doped with 1 mol. % Tm2O3 and 1 mol. % Dy2O3 at room temperature. The tendency of dielectric properties was verified through the changes of lattice parameters and binding energy. The substitution of Dy3+ led to a decrease of tetragonality and grain growth; however, amphoteric substitution caused by the co-doping of Dy2O3 and Tm2O3 compensated for those adverse effects. It can be concluded that the improvement of dielectric properties originated from the increase of the site substitution rate of Dy3+ and Tm3+ ions according to the ionic size the in rare-earth doped BaTiO3 system.

  15. A novel anode comprised of C&N co-doped Co3O4 hollow nanofibres with excellent performance for lithium-ion batteries.

    PubMed

    Yan, Chunshuang; Chen, Gang; Sun, Jingxue; Zhou, Xin; Lv, Chade

    2016-07-20

    C&N co-doped Co3O4 hollow nanofibres are prepared by combining the electrospinning technique and the hydrothermal method, which show a high reversible capacity and excellent cycling stability as anode materials for Li-ion batteries. DFT calculations give a good explanation for the experimentally enhanced conductivity in C&N co-doped Co3O4 hollow nanofibres. PMID:27389924

  16. Enhancement of dielectric constant in transition metal doped ZnO nanocrystals

    NASA Astrophysics Data System (ADS)

    Singh, Swati; Dey, P.; Roy, J. N.; Mandal, S. K.

    2014-09-01

    We have presented dielectric studies on Zn1-xCoxO, Zn1-xFexO, and Zn1-xFex/2Cox/2O (x = doping level) semiconducting nanoparticles (˜2-40 nm). For all those samples, dielectric constant (є) is found to exhibit a maximum with x. Enhancement of є is found to be ˜250 times for Zn0.85Co0.15O and ˜400 times for Zn0.8Fe0.1Co0.1O from that of ZnO. Presence of effective higher oxidation state of transition metals ions in ZnO due to Fe/Co doping resulting in space charge polarization possibly yields this effect. The simultaneous existence of high є, semiconducting, and ferromagnetic like behaviour at 300 K seems to propose Zn0.8Fe0.1Co0.1O, promising for technological application.

  17. Novel tannin-based Si, P co-doped carbon for supercapacitor applications

    NASA Astrophysics Data System (ADS)

    Ramasahayam, Sunil Kumar; Nasini, Udaya B.; Shaikh, Ali U.; Viswanathan, Tito

    2015-02-01

    Increasing environmental pollution and population compounded by a decrease in the availability of non-renewable resources and fossil fuels has propelled the need for sustainable alternate energy storage technologies particularly in the last two decades. An attempt to meet this crisis was carried out by a unique, microwave-assisted method which has enabled the generation of a novel Si, P co-doped carbon (SiPDC) for supercapacitor applications. The microwave-assisted method is useful in developing SiPDC at a rapid and economical fashion that does not employ any inert or reducing gases, but is high yielding. Varying proportions of precursor materials were utilized to generate four SiPDCs (SiPDC-1, SiPDC-2, SiPDC-3 and SiPDC-4) with varying contents of dopants as evidenced by X-ray photoelectron spectroscopic (XPS) results. Surface area and pore size analysis revealed that SiPDC-2 has a surface area of 641.51 m2 g-1, abundant micropores, mesopores and macropores which are critical for electrical double layer capacitance (EDLC). Of all the SiPDCs, SiPDC-2 exhibited highest capacitance of 276 F g-1 in 1 M H2SO4 and 244 F g-1 in 6 M KOH at a scan rate of 5 mV s-1. Galvanostatic charge-discharge studies performed in 6 M KOH establish the high capacitance of SiPDC-2. SiPDC-2 also exhibited excellent electrochemical stability in 1 M H2SO4 and 6 M KOH.

  18. Magnetic nanoparticles formed in glasses co-doped with iron and larger radius elements

    SciTech Connect

    Edelman, I.; Ivanova, O.; Ivantsov, R.; Velikanov, D.; Zabluda, V.; Zubavichus, Y.; Veligzhanin, A.; Zaikovskiy, V.; Stepanov, S.; Artemenko, A.; Curely, J.; Kliava, J.

    2012-10-15

    A new type of nanoparticle-containing glasses based on borate glasses co-doped with low contents of iron and larger radius elements, Dy, Tb, Gd, Ho, Er, Y, and Bi, is studied. Heat treatment of these glasses results in formation of magnetic nanoparticles, radically changing their physical properties. Transmission electron microscopy and synchrotron radiation-based techniques: x-ray diffraction, extended x-ray absorption fine structure, x-ray absorption near-edge structure, and small-angle x-ray scattering, show a broad distribution of nanoparticle sizes with characteristics depending on the treatment regime; a crystalline structure of these nanoparticles is detected in heat treated samples. Magnetic circular dichroism (MCD) studies of samples subjected to heat treatment as well as of maghemite, magnetite, and iron garnet allow to unambiguously assign the nanoparticle structure to maghemite, independently of co-dopant nature and of heat treatment regime used. Different features observed in the MCD spectra are related to different electron transitions in Fe{sup 3+} ions gathered in the nanoparticles. The static magnetization in heat treated samples has non-linear dependence on the magnetizing field with hysteresis. Zero-field cooled magnetization curves show that at higher temperatures the nanoparticles occur in superparamagnetic state with blocking temperatures above 100 K. Below ca. 20 K, a considerable contribution to both zero field-cooled and field-cooled magnetizations occurs from diluted paramagnetic ions. Variable-temperature electron magnetic resonance (EMR) studies unambiguously show that in as-prepared glasses paramagnetic ions are in diluted state and confirm the formation of magnetic nanoparticles already at earlier stages of heat treatment. Computer simulations of the EMR spectra corroborate the broad distribution of nanoparticle sizes found by 'direct' techniques as well as superparamagnetic nanoparticle behaviour demonstrated in the magnetization

  19. Formation and Characteristics of Anatase-Type Titania Solid Solution Nanoparticles Doped with Nb5+ M (M = Ga3+, Al3+, Sc3+)

    NASA Astrophysics Data System (ADS)

    Hirano, Masanori; Ito, Takaharu

    2011-10-01

    Anatase-type titania solid solutions co-doped with Nb5+ and cation M (M = Ga3+, Al3+, Sc3+) with composition Ti1-2XNbXMXO2 were directly formed as nanoparticles from precursor solutions of TiOSO4, NbCl5, and metal salts (Ga(SO4)3, Al(NO3)3, and Sc(NO3)3) under mild hydrothermal conditions at 180 °C for 5 h using the hydrolysis of urea. The effect of co-doped cation M on the formation and properties of anatase-type titania solid solutions was investigated. The region of anatse-type solid solution depended on the co-doped cation M. The composition range of anatase-type titania solid solution in the case of M = Sc3+ was much wider than that in the case of M = Ga3+ and Al3+. The increase in the amount of co-doped cation M = Ga3+, Al3+ enhanced the crystallite growth of anatase solid solutions under the hydrothermal conditions. The solid solutions co-doped with M = Al3+ showed the most improved photocatalytic activity in the three cations. The anatase-to-rutile phase transformation of solid solutions was promoted at lower temperature via the presence of co-doped cation M = Ga3+.

  20. Spectral properties of ZnO and ZnO-Al2O3 coatings prepared by polymer-salt method

    NASA Astrophysics Data System (ADS)

    Evstropiev, Sergey K.; Gatchin, Yury A.; Evstropyev, Kirill S.; Romanova, Eva B.

    2016-04-01

    Experimental results show that the use of film-forming solutions based on zinc and aluminum nitrates and high molecular polyvinylpyrrolidone allows obtaining thin oxide coatings having unusually large bandgap values and transparent in a wide spectral range. The values of the bandgaps of coating materials are significantly higher than the bandgap of bulk ZnO, and it is varied in the range from 3.46 to 4.16 eV, resulting from the metastable structure of the coating.

  1. Enhanced light extraction of GaN-based light-emitting diodes with periodic textured SiO2 on Al-doped ZnO transparent conductive layer

    NASA Astrophysics Data System (ADS)

    Yu, Zhao; Bingfeng, Fan; Yiting, Chen; Yi, Zhuo; Zhoujun, Pang; Zhen, Liu; Gang, Wang

    2016-07-01

    We report an effective enhancement in light extraction of GaN-based light-emitting diodes (LEDs) with an Al-doped ZnO (AZO) transparent conductive layer by incorporating a top regular textured SiO2 layer. The 2 inch transparent through-pore anodic aluminum oxide (AAO) membrane was fabricated and used as the etching mask. The periodic pore with a pitch of about 410 nm was successfully transferred to the surface of the SiO2 layer without any etching damages to the AZO layer and the electrodes. The light output power was enhanced by 19% at 20 mA and 56% at 100 mA compared to that of the planar LEDs without a patterned surface. This approach offers a technique to fabricate a low-cost and large-area regular pattern on the LED chip for achieving enhanced light extraction without an obvious increase of the forward voltage. ).

  2. Catalyst-free synthesis of well-aligned ZnO nanowires on In0.2Ga0.8N, GaN, and Al0.25Ga0.75N substrates.

    PubMed

    Yang, W Q; Dai, L; You, L P; Zhang, B R; Shen, B; Qin, G G

    2006-12-01

    Well-aligned ZnO nanowires have been synthesized vertically on In0.2Ga0.8N, GaN, and Al0.25Ga0.75N substrates, using a catalyst-free carbon thermal-reduction vapor phase deposition method for the first time. The as-synthesized nanowires are single crystalline wurtzite structure, and have a growth direction of [0001]. Each nanowire has a smooth surface, and uniform diameter along the growth direction. The average diameter and length of these nanowires are 120-150 nm, and 3-10 )m, respectively. We suggest that the growth mechanism follow a self-catalyzing growth model. Excitonic emission peaked around 385 nm dominates the room-temperature photoluminescence spectra of these nanowires. The room-temperature photoluminescence and Raman scattering spectra show that these nanowires have good optical quality with very less structural defects. PMID:17256330

  3. Realizing ferromagnetic ordering in SnO2 and ZnO nanostructures with Fe, Co, Ce ions.

    PubMed

    Verma, Kuldeep Chand; Kotnala, R K

    2016-07-14

    We report the defects/vacancies that attribute to room temperature ferromagnetism in SnO2 in contrast to ZnO [Phys. Chem. Chem. Phys., 2016, 18, 5647], which has observed ferromagnetic ordering below room temperature, since both the systems involve similar dopant Fe, Co, and Ce ions. The Fe, Co, Ce doped SnO2 nanostructures were synthesized by a sol-gel process. The Rietveld refinement of the X-ray diffraction data detects a rutile SnO2 structure, with structural defects due to the deformation of the unit cell with doping. The pure, Fe and Co doped SnO2 have nanoparticle formation that is induced to nanorods with Ce co-doping. However, ZnO retained a nanorod-type shape with Fe and Co ions and changed to nanoparticles with Ce co-doping. The rutile SnO2 structure and defect formation with Fe, Co, and Ce ions is also confirmed with Raman vibrational modes. The observed lattice defects due to oxygen vacancies are shown by the photoluminescence study. The weak room temperature ferromagnetism is observed with Fe and Co ions in SnO2, which is enhanced with Ce ions. The zero field (ZFC) and field cooling magnetic measurements indicate an improvement in magnetization with a cusp in the ZFC curve at low temperature, observed due to an antiferromagnetic transition. It also induced variations in the magnetic coercive field due to the phenomenon of superparamagnetism, spin glasses, and magnetic clustered growth. This can be further confirmed with ac magnetic susceptibility measurements that show magnetic transitions as well as frequency dispersive and dependent behaviors of χ'(T)/χ''(T). However, the Fe, Co, Ce doped ZnO exhibit paramagnetic behavior at room temperature due to favorable antiferromagnetic interactions and have a ferromagnetic transition at low temperature with little ferromagnetic cluster growth. PMID:27305970

  4. Electrical property studies on chemically processed polypyrolle/aluminum doped ZnO based hybrid heterostructures

    NASA Astrophysics Data System (ADS)

    Mohan Kumar, G.; Ilanchezhiyan, P.; Madhan Kumar, A.; Yuldashev, Sh. U.; Kang, T. W.

    2016-04-01

    A hybrid structure based on p-type polypyrolle (PPy) and n-type aluminum (Al) doped ZnO nanorods was successfully constructed. The effect of Al doping on material properties of wurtzite structured ZnO were studied using several analytical techniques. To establish the desired hybrid structure, pyrrole monomers were polymerized on hydrothermally grown Al doped ZnO nanorods by chemical polymerization. The current-voltage characteristics on the fabricated PPy/Al doped ZnO heterostructures were found to exhibit excellent rectifying characteristics under dark and illumination conditions. The obtained results augment the prescribed architecture to be highly suitable for high-sensitivity optoelectronic applications.

  5. Domain matched epitaxial growth of (111) Ba{sub 0.5}Sr{sub 0.5}TiO{sub 3} thin films on (0001) Al{sub 2}O{sub 3} with ZnO buffer layer

    SciTech Connect

    Krishnaprasad, P. S. E-mail: mkj@cusat.ac.in; Jayaraj, M. K. E-mail: mkj@cusat.ac.in; Antony, Aldrin; Rojas, Fredy

    2015-03-28

    Epitaxial (111) Ba{sub 0.5}Sr{sub 0.5}TiO{sub 3} (BST) thin films have been grown by pulsed laser deposition on (0001) Al{sub 2}O{sub 3} substrate with ZnO as buffer layer. The x-ray ω-2θ, Φ-scan and reciprocal space mapping indicate epitaxial nature of BST thin films. The domain matched epitaxial growth of BST thin films over ZnO buffer layer was confirmed using Fourier filtered high resolution transmission electron microscope images of the film-buffer interface. The incorporation of ZnO buffer layer effectively suppressed the lattice mismatch and promoted domain matched epitaxial growth of BST thin films. Coplanar inter digital capacitors fabricated on epitaxial (111) BST thin films show significantly improved tunable performance over polycrystalline thin films.

  6. The effect of dopant concentration on properties of transparent conducting Al-doped ZnO thin films for efficient Cu2ZnSnS4 thin-film solar cells prepared by electrodeposition method

    NASA Astrophysics Data System (ADS)

    Mkawi, E. M.; Ibrahim, K.; Ali, M. K. M.; Farrukh, M. A.; Mohamed, A. S.

    2015-11-01

    Al-doped ZnO (AZO) thin films were potentiostatically deposited on indium tin oxide substrates. The influence of the doping level of the ZnO:Al films was investigated. The results of the X-ray diffraction and scanning electron microscopy analysis revealed that the structural properties of the AZO films were found polycrystalline with a hexagonal wurtzite-type structure along the (002) plane. The grain size of the AZO films was observed as approximately 3 μm in the film doping with 4 mol% ZnO:Al concentration. The thin films also exhibited an optical transmittance as high as 90 % in the wavelength range of 100-1,000 nm. The optical band gap increased from 3.33 to 3.45 eV. Based on the Hall studies, the lowest resistivity (4.78 × 10-3 Ω cm) was observed in the film doping with 3 mol% ZnO:Al concentration. The sheet resistant, carrier concentration and Hall mobility values were found as 10.78 Ω/ square, 9.03 × 1018 cm-3 and 22.01 cm2/v s, respectively, which showed improvements in the properties of AZO thin films. The ZnO:Al thin films were used as a buffer layer in thin-film solar cells with the structure of soda-lime glass/Mo/Cu2ZnSnS4/ZnS/ZnO/Al grid. The best solar cell efficiency was 2.3 % with V OC of 0.430 V, J SC of 8.24 mA cm-2 and FF of 68.1 %.

  7. Rutile-type Co doped SnO2 diluted magnetic semiconductor nanoparticles: Structural, dielectric and ferromagnetic behavior

    NASA Astrophysics Data System (ADS)

    Mehraj, Sumaira; Shahnawaze Ansari, M.; Alimuddin

    2013-12-01

    Nanoparticles of basic composition Sn1-xCoxO2 (x=0.00, 0.01, 0.03, 0.05 and 0.1) were synthesized through the citrate-gel method and were characterized for structural properties using X-ray diffraction (XRD), Scanning electron microscopy (SEM), Energy dispersive X-ray spectroscopy (EDS) and Fourier transform infrared spectroscopy (FT-IR). XRD analysis of the powder samples sintered at 500 °C for 12 h showed single phase rutile type tetragonal structure and the crystallite size decreased as the cobalt content was increased. FT-IR spectrum displayed various bands that came due to fundamental overtones and combination of O-H, Sn-O and Sn-O-Sn entities. The effect of Co doping on the electrical and magnetic properties was studied using dielectric spectroscopy and vibrating sample magnetometer (VSM) at room temperature. The dielectric parameters (ε, tan δ and σac) show their maximum value for 10% Co doping. The dielectric loss shows anomalous behavior with frequency where it exhibits the Debye relaxation. The variation of dielectric properties and ac conductivity with frequency reveals that the dispersion is due to the Maxwell-Wagner type of interfacial polarization in general and hopping of charge between Sn2+ and Sn4+ as well as between Co2+ and Co3+ ions. The complex impedance analysis was used to separate the grain and grain boundary contributions in the system which shows that the conduction process in grown nanoparticles takes place predominantly through grain boundary volume. Hysteresis loops were observed clearly in M-H curves from 0.01 to 0.1% Co doped SnO2 samples. The saturation magnetization of the doped samples increased slightly with increase of Co concentration. However pure SnO2 displayed paramagnetism which vanished at higher values of magnetic field.

  8. Investigation of the stability of Co-doped apatite ionic conductors in NH{sub 3}

    SciTech Connect

    Headspith, D.A.; Orera, A.; Young, N.A.; Francesconi, M.G.

    2010-12-15

    Hydrogen powered solid oxide fuel cells (SOFCs) are of enormous interest as devices for the efficient and clean production of electrical energy. However, a number of problems linked to hydrogen production, storage and transportation are slowing down the larger scale use of SOFCs. Identifying alternative fuel sources to act as intermediate during the transition to the full use of hydrogen is, therefore, of importance. One excellent alternative is ammonia, which is produced on a large scale, is relatively cheap and has the infrastructure for storage and transportation already in place. However, considering that SOFCs operate at temperatures higher than 500 {sup o}C, a potential problem is the interaction of gaseous ammonia with the materials in the cathode, anode and solid electrolyte. In this paper, we extend earlier work on high temperature reactions of apatite electrolytes with NH{sub 3} to the transition metal (Co) doped systems, La{sub 9.67}Si{sub 5}CoO{sub 26} and La{sub 10}(Si/Ge){sub 5}CoO{sub 26.5}. A combination of PXRD, TGA and XAFS spectroscopy data showed a better structural stability for the silicate systems. Apatite silicates and germanates not containing transition metals tend to substitute nitride anions for their interstitial oxide anions, when reacted with NH{sub 3} at high temperature and, consequentially, lower the interstitial oxide content. In La{sub 9.67}Si{sub 5}CoO{sub 26} and La{sub 10}(Si/Ge){sub 5}CoO{sub 26.5} reduction of Co occurs as a competing process, favouring lower levels of nitride-oxide substitution. -- Graphical Abstract: In reactions between the apatites La{sub 9.67}Si{sub 5}CoO{sub 26} and La{sub 10}(Si/Ge){sub 5}CoO{sub 26.5} and NH{sub 3} (g) at temperatures T>500 {sup o}C, the partial substitution of the Si and Ge by Co seems to discourage O{sup 2-}/N{sup 3-} substitution in favour of the reduction of the metal. Display Omitted

  9. Improving the oxidation potential of Sb-doped SnO2 electrode by Zn/Sb co-doping

    NASA Astrophysics Data System (ADS)

    Chen, Aqing; Bin Li, Bin; Miljkovic, Bojan; Souza, Christina; Zhu, Kaigui; Ruda, Harry E.

    2014-07-01

    Inorganic oxides are recognized as attractive materials for developing anodes for wastewater treatment, potentially offering a cost effective solution for electro-oxidation. A key parameter in measuring the effectiveness of different anode materials is the oxygen over potential. In this paper, we study the role of Zn and Sb co-doping of SnO2 thin films to achieve enhanced oxidation potentials, suitable for use in wastewater treatment. The morphology, chemical, and electrochemical properties of the films were characterized, and as a result of an optimization study, suitable anode materials for wastewater treatment are identified.

  10. Quantum-chemical study of nitrogen and magnesium co-doping in α-Cr2O3

    NASA Astrophysics Data System (ADS)

    Jácome, Soraya; Stashans, Arvids

    2016-05-01

    Study of corundum-type chromium oxide (α-Cr2O3) crystal doped with the nitrogen and magnesium impurities has been carried out through the use of first-principles calculations based on the density functional theory (DFT) and generalized gradient approximation (GGA). Three cases corresponding different impurity-impurity distances have been considered. Structural, electronic and magnetic properties have been studied for all co-doping cases. The p-type electrical conductivity was found when distance between the Mg and N atoms is equal to 4.10 Å. The results obtained are consistent with the available experimental data.

  11. Doping concentration dependence of microstructure and magnetic behaviours in Co-doped TiO2 nanorods

    PubMed Central

    2014-01-01

    Co-doped titanium dioxide (TiO2) nanorods with different doping concentrations were fabricated by a molten salt method. It is found that the morphology of TiO2 changes from nanorods to nanoparticles with increasing doping concentration. The mechanism for the structure and phase evolution is investigated in detail. Undoped TiO2 nanorods show strong ferromagnetism at room temperature, whereas incorporating of Co deteriorates the ferromagnetic ordering. X-ray photoelectron spectroscopy (XPS) and electron spin resonance (ESR) results demonstrate that the ferromagnetism is associated with Ti vacancy. PMID:25593558

  12. Frequency upconversion in Er3+ and Yb3+ co-doped MgTiO3 phosphor

    NASA Astrophysics Data System (ADS)

    Mahata, Manoj Kumar; Sinha, Shriya; Kumar, Kaushal

    2016-05-01

    In the present work we have synthesized Er3+/Yb3+ co-doped MgTiO3 phosphor via co-precipitation route. The X-ray spectrum shows orthorhombic phase of the synthesized material. Fourier transform infrared spectrum does not reveal the presence of any significant amount of impurity. As for optical characterization frequency upconversion luminescence has been studied upon 980 nm cw diode laser excitation and the intense emission bands are found at 526 and 658 nm. This result indicates that this material could be employed as a potential candidate for infrared to visible upconverter.

  13. Structural, morphological and electroluminescence studies of Zno:Co nanophosphor

    NASA Astrophysics Data System (ADS)

    Singh, Anju; Vishwakarma, H. L.

    2016-09-01

    The nanoparticles of zinc oxide (ZnO) doped with various concentrations of cobalt (Co) were synthesized by chemical precipitation method in the presence of capping agent polyvinylpyrrolidone (PVP). The effect of doping concentration on structural and morphological properties has been studied by X-ray diffraction (XRD) and scanning electron microscope (SEM). Cell volume, bond length, texture coefficient, lattice constants and dislocation density are also studied. Here, we also compared the interplaner spacing and relative peak intensities from their standard values with different angles. Crystallite sizes have been calculated by Debye-Scherrer's formula whose values are decreasing with increase in cobalt content up to 3 %. It has been seen that the growth orientation of the prepared ZnO nanorods was (101). The XRD analysis also ensures that ZnO has a hexagonal (wurtzite) crystal structure. The electroluminescence (EL) cells were prepared by placing pure and cobalt-doped ZnO nanoparticles between ITO-coated conducting glass plate and aluminium foil. Alternating voltage of various frequencies was applied, and EL brightness at different voltages was measured and corresponding current was also recorded. The voltage dependence of electroluminescence (EL) brightness of the ZnO:Co shows exponential increase. The linear voltage-current characteristic indicates ohmic nature. The EL brightness at a particular voltage is found to increase by increasing Co doping, but for higher percentage of Co the EL brightness is reduced. It is also seen that Co does not influence the threshold voltage. The brightness is also affected by increasing the frequency of AC signal.

  14. Magneto-optical spectrum and the effective excitonic Zeeman splitting energies of Mn and Co-doped CdSe nanowires

    SciTech Connect

    Xiong, Wen; Chen, Wensuo

    2013-12-21

    The electronic structure of Mn and Co-doped CdSe nanowires are calculated based on the six-band k·p effective-mass theory. Through the calculation, it is found that the splitting energies of the degenerate hole states in Mn-doped CdSe nanowires are larger than that in Co-doped CdSe nanowires when the concentration of these two kinds of magnetic ions is the same. In order to analysis the magneto-optical spectrum of Mn and Co-doped CdSe nanowires, the four lowest electron states and the four highest hole states are sorted when the magnetic field is applied, and the 10 lowest optical transitions between the conduction subbands and the valence subbands at the Γ point in Mn and Co-doped CdSe nanowires are shown in the paper, it is found that the order of the optical transitions at the Γ point almost do not change although two different kinds of magnetic ions are doped in CdSe nanowires. Finally, the effective excitonic Zeeman splitting energies at the Γ point are found to increase almost linearly with the increase of the concentration of the magnetic ions and the magnetic field; meanwhile, the giant positive effective excitonic g factors in Mn and Co-doped CdSe nanowires are predicted based on our theoretical calculation.

  15. Photocatalytic performance of nitrogen, osmium co-doped TiO2 for removal of eosin yellow in water under simulated solar radiation.

    PubMed

    Kuvarega, Alex T; Krause, Rui W M; Mamba, Bhekie B

    2013-07-01

    Nitrogen, osmium co-doped TiO2 photocatalysts were prepared by a modified sol-gel method using ammonia as the nitrogen source and osmium tetroxide as the source of osmium. The role of rutile phase OsO2 in enhancing the photocatalytic activity of rutile TiO2 towards the degradation of Eosin Yellow was investigated. The materials were characterised by various techniques that include FTIR, Raman, XRD, SEM, EDS, TEM, TGA and DRUV-Vis. The amorphous, oven dried sample was transformed to the anatase and then the rutile phase with increasing calcination temperature. DRUV-Vis analysis revealed a red shift in absorption with increasing calcination temperature, confirmed by a decrease in the band gap of the material. The photocatalytic activity of N, Os co-doped TiO2 was evaluated using eosin yellow degradation and activity increased with increase in calcination temperature under simulated solar irradiation. The rutile phase of the co-doped TiO2 was found to be more effective in degrading the dye (k(a) = 1.84 x 10(-2) min(-1)) compared to the anatase co-doped phase (k(a) = 9.90 x 10(-3) min(-1)). The enhanced photocatalytic activity was ascribed to the synergistic effects of rutile TiO2 and rutile OsO2 in the N, Os co-doped TiO2. PMID:23901525

  16. Efficient visible upconversion luminescence in Er3+ and Er3+/Yb3+ co-doped Y2O3 phosphors obtained by solution combustion reaction

    NASA Astrophysics Data System (ADS)

    Singh, Vijay; Haritha, P.; Venkatramu, V.; Kim, S. H.

    Combustion derived Er3+ -doped Y2O3 and Er3+/Yb3+co-doped Y2O3 powders have been characterized by X-ray diffraction, energy dispersive X-ray analysis, Fourier transform infrared spectroscopy and laser excited spectroscopy. Formation of Y2O3 phosphor was confirmed by X-ray diffraction and energy dispersive X-ray analysis. The vibrational properties of Y2O3 powder was studied by Fourier transform infrared spectroscopy. The luminescence spectra of Er3+ -doped and Er3+/Yb3+ co-doped Y2O3 powders were studied under 379 nm excitation. The strong up-conversion luminescence for Er3+ -doped and Er3+/Yb3+ co-doped Y2O3 powders have been observed under 978 nm laser excitation. The effect of Yb3+ addition on optical and luminescence properties of Er3+:Y2O3 powders were studied. The ratio of red to green intensity has been enhanced when Er3+ -doped Y2O3 is co-doped with Yb3+ ions. The effect of co-doping of Yb3+ ions on the visible luminescence intensity of Er3+ has been studied and the mechanism responsible for the variation in the green and red intensity is discussed.

  17. Efficient visible upconversion luminescence in Er3+ and Er3+/Yb3+ co-doped Y2O3 phosphors obtained by solution combustion reaction.

    PubMed

    Singh, Vijay; Haritha, P; Venkatramu, V; Kim, S H

    2014-05-21

    Combustion derived Er(3+) -doped Y2O3 and Er(3+)/Yb(3+)co-doped Y2O3 powders have been characterized by X-ray diffraction, energy dispersive X-ray analysis, Fourier transform infrared spectroscopy and laser excited spectroscopy. Formation of Y2O3 phosphor was confirmed by X-ray diffraction and energy dispersive X-ray analysis. The vibrational properties of Y2O3 powder was studied by Fourier transform infrared spectroscopy. The luminescence spectra of Er(3+) -doped and Er(3+)/Yb(3+) co-doped Y2O3 powders were studied under 379nm excitation. The strong up-conversion luminescence for Er(3+) -doped and Er(3+)/Yb(3+) co-doped Y2O3 powders have been observed under 978nm laser excitation. The effect of Yb(3+) addition on optical and luminescence properties of Er(3+):Y2O3 powders were studied. The ratio of red to green intensity has been enhanced when Er(3+) -doped Y2O3 is co-doped with Yb(3+) ions. The effect of co-doping of Yb(3+) ions on the visible luminescence intensity of Er(3+) has been studied and the mechanism responsible for the variation in the green and red intensity is discussed. PMID:24682034

  18. Fundamental understanding of the growth, doping and characterization of aligned ZnO nanowires

    NASA Astrophysics Data System (ADS)

    Shen, Gang

    Zinc oxide (ZnO) is a II-VI semiconductor whose wide direct bandgap (3.37 eV) and large exciton binding energy (60 meV) make it compelling for optoelectronic devices such as light emitting diodes, lasers, photodetectors, solar cells, and mechanical energy harvesting devices. One dimensional structures of ZnO (nanowires) have become significant due to their unique physical properties arising from quantum confinement, and they are ideal for studying transport mechanisms in one-dimensional systems. In this doctoral research work, ZnO nanowire (NW) arrays were synthesized on sapphire substrates through carbo-thermal reduction of ZnO powders, and the effects of growth parameters on the properties of ZnO NW arrays were studied by scanning and transmission electron microscopy, X-ray diffraction, photoluminescence and Raman spectroscopy. Based on the phonon mode selection rules in wurtzite ZnO, confocal Raman spectroscopy was used to assess the alignment of ZnO NWs in an array, thereby complementing X-ray diffraction. Al doped ZnO NW arrays were achieved by mixing Al powder into the ZnO and graphite source mixture, and the presence of Al was confirmed by Energy-dispersive X-ray spectroscopy. The incorporation of Al had the effects of lowering the electrical resistivity, slightly deteriorating crystal quality and suppressing defect related green emission. Two models of ZnO NW growth were developed by establishing the relationship between NW length and diameter for undoped and Al doped ZnO NWs separately. The growth of undoped ZnO NWs followed the diffusion-induced model which was characterized by thin wires being longer than thick wires, while the growth of Al doped ZnO was controlled by Gibbs-Thomson effect which was characterized by thin wires being shorter than thin wires. Local electrode atom probe analysis of ZnO NWs was carried out to study the crystal stoichiometry and Al incorporation. Undoped ZnO NWs were found to be high purity with no detectable impurities

  19. Synthesis and photocatalytic activity of co-doped mesoporous TiO 2 on Brij98/CTAB composite surfactant template

    NASA Astrophysics Data System (ADS)

    Zhang, Xiaotong; Zhou, Guowei; Xu, Jing; Bai, Guangwei; Wang, Lei

    2010-06-01

    Using composite surfactant templates, polyoxyethylene (20) oleyl ether (Brij98) and cetyl trimethyl ammonium bromide (CTAB), as structure-directing agents, N and La co-doped mesoporous TiO 2 complex photocatalysts were synthesized successfully. The micromorphology of co-doped mesoporous TiO 2 samples was characterized by X-ray diffraction (XRD), transmission electron microscopy (TEM), Fourier transformed infrared spectroscopy (FT-IR), energy-dispersive X-ray spectrometer (EDS) and N 2 adsorption-desorption measurements. The results indicated that the complex photocatalyst prepared with a molar ratio of Brij98:CTAB=1:1 showed a uniform pore size of ca. 7 nm and a high specific surface area ( SBET) of 279.0 m 2 g -1, and exhibited the highest photocatalytic activity for degradation of papermaking wastewater under ultra-violet light irradiation. The chemical oxygen demand (CODc r) percent degradation was about 73% in 12 h and chroma percent degradation was 100% in 8 h.

  20. Spectroscopic properties and upconversion studies in Ho(3+) /Yb(3+) Co-doped calcium scandate with spectrally pure green emission.

    PubMed

    Li, Jing; Zhang, Jiahua; Hao, Zhendong; Zhang, Xia; Zhao, Jihong; Luo, Yongshi

    2013-12-16

    The optical properties of a Ho(3+) /Yb(3+) co-doped CaSc2 O4 oxide material are investigated in detail. The spectral properties are described as a function of doping concentrations. The efficient Yb(3+) →Ho(3+) energy transfer is observed. The transfer efficiency approaches 50 % before concentration quenching. The concentration-optimized sample exhibits a strong green emission accompanied with a weak red emission, showing perfect green monochromaticity. The results of the spectral distribution, power dependence, and lifetime measurements are presented. The green, red, and near-infrared (NIR) emissions around 545, 660, and 759 nm are assigned to the (5) F4 +(5) S2 →(5) I8 , (5) F5 →(5) I8 , and (5) F4 +(5) S2 →(5) I7 transitions of Ho(3+) , respectively. The detailed study reveals the upconversion luminescence mechanism involved in a novel Ho(3+) /Yb(3+) co-doped CaSc2 O4 oxide material. PMID:24323855

  1. Enhanced electrical properties in multiferroic BiFeO3 ceramics co-doped by La3+ and V5+

    NASA Astrophysics Data System (ADS)

    Yu, Benfang; Li, Meiya; Wang, Jing; Pei, Ling; Guo, Dongyun; Zhao, Xingzhong

    2008-09-01

    La3+ and V5+ co-doped Bi0.85La0.15Fe1-xVxO3 (BLFVx, x = 0-0.1) ceramics were prepared by a rapid liquid sintering technique. The effects of the V5+-doping content on the structure and electrical properties of BLFVx ceramics were investigated. In the range of the V5+ content x from 0 to 0.03, BLFVx ceramics had a polycrystalline perovskite structure with tiny residual Bi2O3, while an impurity phase appeared for x > 0.03. As the x increased from 0 to 0.1, both the leakage current density and the dielectric loss (tan δ) for BLFVx ceramics decreased gradually, while the dielectric constant (ɛr) first increased and then decreased gradually in this process, reaching a maximum value of 273 for x = 0.03. Among the BLFVx ceramics, the BLFVx=0.01 ceramic showed a well-saturated hysteresis loop with large remanent polarization (Pr) of 39.4 µC cm-2 and a low coercive electric field (Ec) of ±43.1 kV cm-1 under an applied electric field of ±75 kV cm-1. In addition, these ceramics exhibited good anti-fatigue characteristics after 2 × 1010 read/write polarization cycles. These suggested that La3+ and V5+ co-doping was beneficial for enhancing the dielectric, ferroelectric and anti-fatigue properties of the BLFVx ceramics.

  2. N, S co-doped-TiO2/fly ash beads composite material and visible light photocatalytic activity

    NASA Astrophysics Data System (ADS)

    Lv, Jun; Sheng, Tong; Su, Lili; Xu, Guangqing; Wang, Dongmei; Zheng, Zhixiang; Wu, Yucheng

    2013-11-01

    Using TiCl4 as the titanium source, urea as the precipitating agent, nano-TiO2/fly ash beads composite materials were prepared by hydrolysis-precipitation method. Using (NH2)2CO and (NH2)2SC as the N and S source respectively, N and S co-doped TiO2/fly ash beads composite materials were prepared by grinding them together according to a certain proportion and calcined at 500 °C for 2 h. The composite materials were characterized by SEM, EDS, XPS, and UV-vis spectrophotometer methods. The UV-vis absorption spectra results show that the absorption edge of un-doped composites is 390 nm while that of doped composites red-shifts to 500 nm. The photocatalytic activity of composite materials was evaluated by degradation of methyl orange under visible light irradiation (halogen lamp, 250 W). The results showed that after irradiation for 1 h, degradation rate of N, S co-doped-TiO2/fly ash beads composite material can reach 65%, while the degradation rate of un-doped sample and P25 were just 10% and 6%, respectively. The composite material also showed excellent recycling properties.

  3. Up conversion processes in yttrium-lithium-flouride crystals co-doped with erbium and ytterbium ions

    NASA Astrophysics Data System (ADS)

    Spinger, B.; Danilov, Valery P.; Prokhorov, Alexander M.; Schwan, L. O.; Schmid, D.

    2002-07-01

    We report on studies of the up-conversion process in YLiF4 single crystals co-doped with Er3+ and with Yb3+. Er3+ has a well known complicated energy level system within the 4f shell which gives rise to the up- conversion process. Yb3+ with a broad absorption band int eh regime 940 nm co-doped with Er3+ and with Yb3+ may be considered as suitable candidates for diode-laser-pumped displays and for solid state laser system int eh visible and near UV region.

  4. Fluorine and boron co-doped diamond-like carbon films deposited by pulsed glow discharge plasma immersion ion processing

    NASA Astrophysics Data System (ADS)

    He, Xiao-Ming; Hakovirta, M.; Peters, A. M.; Taylor, B.; Nastasi, M.

    2002-05-01

    Fluorine (F) and boron (B) co-doped diamond-like carbon (FB-DLC) films were prepared on different substrates by the plasma immersion ion processing (PIIP) technique. A pulse glow discharge plasma was used for the PIIP deposition and was produced at a pressure of 1.33 Pa from acetylene (C2H2), diborane (B2H6), and hexafluoroethane (C2F6) gas. Films of FB-DLC were deposited with different chemical compositions by varying the flow ratios of the C2H2, B2H6, and C2F6 source gases. The incorporation of B2H6 and C2F6 into PIIP deposited DLC resulted in the formation of F-C and B-C hybridized bonding structures. The levels of the F and B concentrations effected the chemical bonding and the physical properties as was evident from the changes observed in density, hardness, stress, friction coefficient, and contact angle of water on films. Compared to B-doped or F-doped DLC films, the F and B co-doping of DLC during PIIP deposition resulted in the formation of films that possessed a reduced hydrogen concentration and stress, while maintaining a high hardness, low friction coefficient, and high wetting contact angle.

  5. High-power graphene mode-locked Tm/Ho co-doped fiber laser with evanescent field interaction

    PubMed Central

    Li, Xiaohui; Yu, Xuechao; Sun, Zhipei; Yan, Zhiyu; Sun, Biao; Cheng, Yuanbing; Yu, Xia; Zhang, Ying; Wang, Qi Jie

    2015-01-01

    Mid-infrared ultrafast fiber lasers are valuable for various applications, including chemical and biomedical sensing, material processing and military applications. Here, we report all-fiber high-power graphene mode-locked Tm/Ho co-doped fiber laser at long wavelength with evanescent field interaction. Ultrafast pulses up to 7.8 MHz are generated at a center wavelength of 1879.4 nm, with a pulse width of 4.7 ps. A graphene absorber integrated with a side-polished fiber can increase the damage threshold significantly. Harmonics mode-locking can be obtained till to the 21th harmonics at a pump power of above 500 mW. By using one stage amplifier in the anomalous dispersion regime, the laser can be amplified up to 450 mW and the narrowest pulse duration of 1.4 ps can be obtained simultaneously. Our work paves the way to graphene Tm/Ho co-doped mode-locked all-fiber master oscillator power amplifiers as potentially efficient and economic laser sources for high-power laser applications, such as special material processing and nonlinear optical studies. PMID:26567536

  6. Enhanced electrical transport by texture modulation and co-doping for Ca3Co4O9+δ materials

    NASA Astrophysics Data System (ADS)

    Liu, Z. Y.; Zhang, F. P.; Zhang, J. X.; Zhang, X.; Lu, Q. M.; Yang, X. Y.

    The powders as well as the texture modulated Ca2.8BaxPryCo4O9+δ (x, y = 0, 0.05, 0.1, 0.15 and 0.2) bulk materials are prepared via solid state reaction, sol-gel and spark plasma sintering method. The powder and bulk materials are analyzed with regard to their phase composition and microscopic character by X-ray diffraction (XRD) and scanning electron microscope (SEM). The thermoelectric transport properties of the bulk materials are measured and investigated. The results show that the plate-like powders with uniform particle size tend to align regularly rather than the powders with anomaly shape and particle size distribution by spark plasma sintering method. The bulk materials co-doped by elements with lower electronegativity tend to form better texture rather than that of the bulk materials co-doped by elements with higher electronegativity via spark plasma sintering method. The resistivities and Seebeck coefficients are in negative accordance to the bulk material texture as a whole, and the carrier transport mechanism is not influenced. The electrical performance is tuned with optimized power factor 462 μW m-1 K-2 at 973 K for Ca2.8BaxPryCo4O9+δ (x = y = 0.1) bulk materials.

  7. On the Luminescence Enhancement of Mn2+ By Co-doping of Eu2+ in ZnS:Mn,Eu

    SciTech Connect

    Hossu, Marius; Schaeffer, Roger O.; Ma, Lun; Chen, Wei; Zhu, Yongbin; Sammynaiken, Ramaswami; Joly, Alan G.

    2013-06-01

    The photoluminescence and X-ray luminescence of ZnS:Mn, ZnS:Mn,Eu and ZnS:Eu were investigated and it was found that the luminescence intensity of Mn2+ in ZnS:Mn,Eu co-doped phosphors is highly dependent on the doping concentration of Eu2+. At the optimized Eu2+concentration (0.2%), the photoluminescence of Mn2+ shows about a 5.5 times enhancement and its X-ray luminescence is enhanced by a factor of 2.5. Both wurtzite and zinc blend phases are present in the samples with wurtzite phase dominant. Co-doping of Eu2+ into ZnS:Mn does not change appreciably the ratio of the two phases or the Mn2+ emission luminescence lifetime; however, the doping of Eu2+ into ZnS:Mn does change the phonon activity. Furthermore, it was found that the defect-related blue emission of ZnS:Eu overlaps with the excitation bands of Mn2+ in ZnS:Mn and there is likely energy transfer from these defect states to Mn2+ in ZnS:Mn,Eu. This energy transfer and the phonon modification are considered to be the two main reasons for the luminescence enhancement and the intensity dependence of Mn2+ emission on Eu2+ doping concentration in ZnS:Mn,Eu.

  8. Colour emission tunability in Ho3+-Tm3+-Yb3+ co-doped Y2O3 upconverted phosphor

    NASA Astrophysics Data System (ADS)

    Pandey, Anurag; Rai, Vineet Kumar

    2012-12-01

    The frequency upconversion (UC) emission throughout the visible region from the Y2O3:Ho3+-Tm3+-Yb3+ co-doped phosphors synthesized by using low temperature combustion process upon excitation with a diode laser operating at 980 nm have been presented. The colour emission tunability in co-doped phosphor has been observed on increasing the pump power and seen by the naked eyes. The tunability in colour emission has also been visualized by CIE chromaticity diagram. The variation in UC emission intensity of the 1G4 → 3H6 (Tm3+) and 5F3 → 5I8 (Ho3+) transitions lying in the blue region has been monitored with increase in the pump power and marked that their ratio can be used to determine the temperature. The developed phosphor has been used to record fingerprints. The observed most intense visible colour emission from the developed material may be used for photodynamic therapy and as an alternative of traditional fluorescent biolabels.

  9. Simultaneous enhancement of magnetic and ferroelectric properties in Dy and Cr co-doped BiFeO3 nanoparticles.

    PubMed

    Mao, Weiwei; Wang, Xingfu; Chu, Liang; Zhu, Yiyi; Wang, Qi; Zhang, Jian; Yang, Jianping; Li, Xing'ao; Huang, Wei

    2016-03-01

    Multiferroic BiFeO3 (BFO), Bi0.95Dy0.05FeO3 and Bi0.95Dy0.05Fe0.95Cr0.05O3 samples were successfully synthesized by a carbon microsphere-assisted sol-gel (CSG) method. X-ray diffraction analysis confirmed a lattice distortion from a rhombohedral structure to a tetragonal structure upon doping Dy and Cr in BFO. The morphology of BFO and doped BFO could be effectively controlled to form nanoparticles, due to the nucleation sites of the carbon microspheres. The co-doping of Dy and Cr in BFO had a significant improvement effect on the magnetic properties, with the remnant magnetization being 0.557 emu g(-1), due to the structural phase transition, size effects and the strong ferromagnetic interaction between Fe(3+)-O-Cr(3+) ions arising from Cr substitution. Meanwhile, the doping of Dy into BFO effectively reduced the leakage current and enhanced the ferroelectric properties. The simultaneous enhancement of magnetic and ferroelectric properties shows the great potential application of Dy- and Cr-co-doped BFO in future multifunctional devices. PMID:26862599

  10. Synergistic enhancement of nitrogen and sulfur co-doped graphene with carbon nanospheres insertion for electrocatalytic oxygen reduction reaction

    DOE PAGESBeta

    Wu, Min; Xin, Huolin L.; Wang, Jie; Wu, Zexing; Wang, Deli

    2015-03-13

    A nitrogen and sulfur co-doped graphene/carbon black (NSGCB) nanocomposite for the oxygen reduction reaction (ORR) was synthesized through a one-pot annealing of a precursor mixture containing graphene oxide, thiourea, and acidized carbon black (CB). The NSGCB showed excellent performance for the ORR with the onset and half-way potentials at 0.96 V and 0.81 V (vs. RHE), respectively. It is significantly improved over that of the catalysts derived from only graphene (0.90 V and 0.76 V) or carbon nanosphere (0.82 V and 0.74 V). The enhanced catalytic activity on the NSGCB electrode could be attributed to the synergistic effect of N/Smore » co-doping and the enlarged interlayer space resulted from the insertion of carbon nanosphere into the graphene sheets. The four-electron selectivity and the limiting current density of the NSGCB nanocomposite are comparable to that of the commercially Pt/C catalyst. Furthermore, the NSGCB nanocomposite was superior to Pt/C in terms of long-term durability and tolerance to methanol poisoning.« less

  11. Enhanced rate performance of LiFePO4/C by co-doping titanium and vanadium

    NASA Astrophysics Data System (ADS)

    Long, Yun-Fei; Su, Jing; Cui, Xiao-Ru; Lv, Xiao-Yan; Wen, Yan-Xuan

    2015-10-01

    V and Ti co-doped LiFePO4/C composites were synthesized by a wet milling assisted carbothermal reduction technology. The structure, morphology and electrochemical performance of the samples were characterized by X-ray diffraction (XRD), X-ray photoelectron spectroscopy (XPS), magnetic susceptibility, positron annihilation lifetime spectra (PAS), scanning electron microscope (SEM), charge/discharge tests, electrochemical impedance spectroscopy (EIS) and cyclic voltammograms (CV). The results showed that the V and Ti co-doped samples kept the olivine structure of LiFePO4, but the synergistic effects between V3+ and Ti4+ in the lattice can increase the disorder degree of the lattice and create Li+ vacancies in LiFePO4/C, thus improve electronic conductivity and Li+ diffusion coefficient. LiV0.069Ti0.025Fe0.905PO4/C delivers an initial discharge capacity of 144.1 mAh g-1 with a capacity retention ratio of 99.4%, 96.3% and 93.6% after 100, 200 and 300 cycles at 10C, respectively. Remarkably, it still gives a high discharge capacity of 124.8 mAh g-1 even at a high rate of 20C.

  12. High-power graphene mode-locked Tm/Ho co-doped fiber laser with evanescent field interaction

    NASA Astrophysics Data System (ADS)

    Li, Xiaohui; Yu, Xuechao; Sun, Zhipei; Yan, Zhiyu; Sun, Biao; Cheng, Yuanbing; Yu, Xia; Zhang, Ying; Wang, Qi Jie

    2015-11-01

    Mid-infrared ultrafast fiber lasers are valuable for various applications, including chemical and biomedical sensing, material processing and military applications. Here, we report all-fiber high-power graphene mode-locked Tm/Ho co-doped fiber laser at long wavelength with evanescent field interaction. Ultrafast pulses up to 7.8 MHz are generated at a center wavelength of 1879.4 nm, with a pulse width of 4.7 ps. A graphene absorber integrated with a side-polished fiber can increase the damage threshold significantly. Harmonics mode-locking can be obtained till to the 21th harmonics at a pump power of above 500 mW. By using one stage amplifier in the anomalous dispersion regime, the laser can be amplified up to 450 mW and the narrowest pulse duration of 1.4 ps can be obtained simultaneously. Our work paves the way to graphene Tm/Ho co-doped mode-locked all-fiber master oscillator power amplifiers as potentially efficient and economic laser sources for high-power laser applications, such as special material processing and nonlinear optical studies.

  13. Structural, optical and photocatalytic properties of Fe and (Co, Fe) co-doped copper oxide spin coated films.

    PubMed

    El Sayed, A M; Shaban, Mohamed

    2015-10-01

    Copper oxide films with composition Cu1-x-yFexCoyO (where x⩽0.06 and y⩽0.03 in a molar ratio) and thickness of about 2 μm were spin coated onto ultrasonically cleaned glass substrates. These films were annealed at 500 °C in the air. XRD results show that films are CuO of polycrystalline and monoclinic structures without the detection of any Fe or Co traces. The average crystallite size of pure CuO is 20.44 nm reduced to 18.72 nm after Fe doping, then increased to 26.82 nm due to the co-doping with Co atoms. The optical band gap blue-shifted from 2.15 eV to 2.3 eV followed by red-shift to 2.15 eV after the Co incorporation. The influence of Fe doping and Co co-doping on the optical constants of CuO films as well as the photocatalytic removal of methylene blue (MB) dye is reported. The correlations between the structural modifications and the resultant optical properties are discussed. The obtained results of the fabricated system are compared with those of similar materials. PMID:25985128

  14. High-power graphene mode-locked Tm/Ho co-doped fiber laser with evanescent field interaction.

    PubMed

    Li, Xiaohui; Yu, Xuechao; Sun, Zhipei; Yan, Zhiyu; Sun, Biao; Cheng, Yuanbing; Yu, Xia; Zhang, Ying; Wang, Qi Jie

    2015-01-01

    Mid-infrared ultrafast fiber lasers are valuable for various applications, including chemical and biomedical sensing, material processing and military applications. Here, we report all-fiber high-power graphene mode-locked Tm/Ho co-doped fiber laser at long wavelength with evanescent field interaction. Ultrafast pulses up to 7.8 MHz are generated at a center wavelength of 1879.4 nm, with a pulse width of 4.7 ps. A graphene absorber integrated with a side-polished fiber can increase the damage threshold significantly. Harmonics mode-locking can be obtained till to the 21(th) harmonics at a pump power of above 500 mW. By using one stage amplifier in the anomalous dispersion regime, the laser can be amplified up to 450 mW and the narrowest pulse duration of 1.4 ps can be obtained simultaneously. Our work paves the way to graphene Tm/Ho co-doped mode-locked all-fiber master oscillator power amplifiers as potentially efficient and economic laser sources for high-power laser applications, such as special material processing and nonlinear optical studies. PMID:26567536

  15. Broadband emission at NIR in double-core optical fiber co-doped with Nd3+/Yb3+ ions

    NASA Astrophysics Data System (ADS)

    Bykowski, Kamil; Bruszewski, Artur; Cimaszewski, Dominik; Ragin, Tomasz; Zmojda, Jacek; Kochanowicz, Marcin; Miluski, Piotr; Dorosz, Dominik

    2015-09-01

    In the paper spectroscopic properties of aluminosilicate glasses co-doped with Nd3+/Yb3+ were investigated. Strong and wide emission in the 1μm region obtained by optimization of Nd3+ --> Yb3+ energy transfer corresponding to the superposition of optical transitions Nd3+:4F3/2 --> 4I11/2 and Yb3+:2F5/2 --> 2F7/2 (Yb3+) was observed. The construction of double-core, double-clad optical fiber with cores manufactured from the aluminosilicate glass (co-doped with 1st core- 0.15Nd2O3, 2nd core - 0.15Nd2O3/0.45Yb2O3 mol%) was developed. Comparative analysis of shape of luminescence (λp=808 nm) obtained in bulk glass (0.15Nd2O3/0.45Yb2O3) and ASE in double-core optical fiber clearly shows significant differences in luminescent properties. Mechanisms influencing differences in the shape of luminescence of fabricated glass and optical fiber were also discussed.

  16. Growth and photorefractive properties of Mg, Fe co-doped near-stoichiometric lithium tantalate single crystals

    NASA Astrophysics Data System (ADS)

    Hsu, W. T.; Chen, Z. B.; You, C. A.; Huang, S. W.; Liu, J. P.; Lan, C. W.

    2010-07-01

    Mg, Fe co-doped near-stoichiometric lithium tantalate (SLT) crystals were successfully grown by the zone-leveling Czochralski (ZLCz) technique and the holographic properties were measured by the two-beam coupling method. The fundamental optical properties of crystals were measured by employing the UV-vis-NIR spectrometer and Fourier transformation infrared spectrophotometer as well. By the chemical analysis, the Li/Ta, Mg/Ta and Fe/Ta ratios of the crystals were obtained and the Li/Ta ratios of the crystals were all close to the theoretical limitation of 0.98. In the holographic properties, the recording time constant, erasing time constant, dynamic range, and sensitivity decreased with light intensity; but the maximum diffraction efficiency showed an opposite trend. Furthermore, the diffraction efficiency, dynamic range and sensitivity of the crystals were improved with a relatively higher Fe/Ta ratio. In comparison with Mn-LT crystals, the Mg, Fe co-doped SLT crystal showed the superior photorefractive properties indicating that it could be a promising new material for lifetime holographic data storage.

  17. Ce(3+) /Tb(3+) non-/single-/co-doped K-Lu-F materials: synthesis, optical properties, and energy transfer.

    PubMed

    Cao, Chunyan; Xie, An; Noh, Hyeon Mi; Jeong, Jung Hyun

    2016-08-01

    Using a hydrothermal method, Ce(3+) /Tb(3+) non-/single-/co-doped K-Lu-F materials have been synthesized. The X-ray diffraction (XRD) results suggest that the Ce(3+) and/or Tb(3+) doping had great effects on the crystalline phases of the final samples. The field emission scanning electron microscopy (FE-SEM) images indicated that the samples were in hexagonal disk or polyhedron morphologies in addition to some nanoparticles, which also indicated that the doping also had great effects on the sizes and the morphologies of the samples. The energy-dispersive spectroscopy (EDS) patterns illustrated the constituents of different samples. The enhanced emissions of Tb(3+) were observed in the Ce(3+) /Tb(3+) co-doped K-Lu-F materials. The energy transfer (ET) efficiency ηT were calculated based on the fluorescence yield. The ET mechanism from Ce(3+) to Tb(3+) was confirmed to be the dipole-quadrupole interaction inferred from the theoretical analysis and the experimental data. Copyright © 2015 John Wiley & Sons, Ltd. PMID:26669301

  18. Synergistic enhancement of nitrogen and sulfur co-doped graphene with carbon nanospheres insertion for electrocatalytic oxygen reduction reaction

    SciTech Connect

    Wu, Min; Xin, Huolin L.; Wang, Jie; Wu, Zexing; Wang, Deli

    2015-03-13

    A nitrogen and sulfur co-doped graphene/carbon black (NSGCB) nanocomposite for the oxygen reduction reaction (ORR) was synthesized through a one-pot annealing of a precursor mixture containing graphene oxide, thiourea, and acidized carbon black (CB). The NSGCB showed excellent performance for the ORR with the onset and half-way potentials at 0.96 V and 0.81 V (vs. RHE), respectively. It is significantly improved over that of the catalysts derived from only graphene (0.90 V and 0.76 V) or carbon nanosphere (0.82 V and 0.74 V). The enhanced catalytic activity on the NSGCB electrode could be attributed to the synergistic effect of N/S co-doping and the enlarged interlayer space resulted from the insertion of carbon nanosphere into the graphene sheets. The four-electron selectivity and the limiting current density of the NSGCB nanocomposite are comparable to that of the commercially Pt/C catalyst. Furthermore, the NSGCB nanocomposite was superior to Pt/C in terms of long-term durability and tolerance to methanol poisoning.

  19. Optimization of scintillation performance via a combinatorial multi-element co-doping strategy: Application to NaI:Tl

    NASA Astrophysics Data System (ADS)

    Khodyuk, I. V.; Messina, S. A.; Hayden, T. J.; Bourret, E. D.; Bizarri, G. A.

    2015-08-01

    A combinatorial approach where doped bulk scintillator materials can be rapidly optimized for their properties through concurrent extrinsic doping/co-doping strategies is presented. The concept that makes use of design of experiment, rapid growth, and evaluation techniques, and multivariable regression analysis, has been successfully applied to the engineering of NaI performance, a historical but mediocre performer in scintillation detection. Using this approach, we identified a three-element doping/co-doping strategy that significantly improves the material performance. The composition was uncovered by simultaneously screening for a beneficial co-dopant ion among the alkaline earth metal family and by optimizing its concentration and that of Tl+ and Eu2+ ions. The composition with the best performance was identified as 0.1% mol Tl+, 0.1% mol Eu2+, and 0.2% mol Ca2+. This formulation shows enhancement of energy resolution and light output at 662 keV, from 6.3 to 4.9%, and from 44 000 to 52 000 ph/MeV, respectively. The method, in addition to improving NaI performance, provides a versatile framework for rapidly unveiling complex and concealed correlations between material composition and performance, and should be broadly applicable to optimization of other material properties.

  20. Nitrogen and phosphorus co-doped graphene quantum dots: synthesis from adenosine triphosphate, optical properties, and cellular imaging

    NASA Astrophysics Data System (ADS)

    Ananthanarayanan, Arundithi; Wang, Yue; Routh, Parimal; Sk, Mahasin Alam; Than, Aung; Lin, Ming; Zhang, Jie; Chen, Jie; Sun, Handong; Chen, Peng

    2015-04-01

    Graphene quantum dots (GQDs) are emerging zero-dimensional materials promising a wide spectrum of applications, particularly, as superior fluorescent reporters for bio-imaging and optical sensing. Heteroatom doping can endow GQDs with new or improved photoluminescence properties. Here, we demonstrate a simple strategy for the synthesis of nitrogen and phosphorus co-doped GQDs from a single biomolecule precursor (adenosine triphosphate - ATP). Such ATP-GQDs exhibit high fluorescence quantum yield, strong two-photon upconversion, small molecular weight, high photostability, and good biocompatibility. Furthermore, transferrin conjugated ATP-GQDs have been used for imaging and real-time tracking of transferrin receptors in live cells.Graphene quantum dots (GQDs) are emerging zero-dimensional materials promising a wide spectrum of applications, particularly, as superior fluorescent reporters for bio-imaging and optical sensing. Heteroatom doping can endow GQDs with new or improved photoluminescence properties. Here, we demonstrate a simple strategy for the synthesis of nitrogen and phosphorus co-doped GQDs from a single biomolecule precursor (adenosine triphosphate - ATP). Such ATP-GQDs exhibit high fluorescence quantum yield, strong two-photon upconversion, small molecular weight, high photostability, and good biocompatibility. Furthermore, transferrin conjugated ATP-GQDs have been used for imaging and real-time tracking of transferrin receptors in live cells. Electronic supplementary information (ESI) available: Supplementary figures related to characterization, computational studies and protein conjugation. See DOI: 10.1039/c5nr01519g

  1. Magnetic properties of α−MnO{sub 2} and Co-doped α−MnO{sub 2} nanowires

    SciTech Connect

    Stella, C. Soundararajan, N. Ramachandran, K.

    2014-04-24

    α−MnO{sub 2} and Co-doped α−MnO{sub 2} nanowires (NWs) were synthesized by hydrothermal method. The structural characterization by XRD revealed the tetragonal structure of α−MnO{sub 2}. The formation of one dimensional (1D) NWs of pure and Co-doped α−MnO{sub 2} was confirmed from SEM. From UV-Vis absorption spectra, it is found that both pure and Co-doped α−MnO{sub 2} NWs showed blue shift compared to bulk, which revealed the quantum confinement in the synthesized samples. The magnetic properties were analyzed by VSM, which suggest that pure and doped α−MnO{sub 2} exhibit ferromagnetic behavior at room temperature (RT)

  2. Thickness dependence of structural and transport properties of Co-doped BaFe2As2 on Fe buffered MgO substrates

    NASA Astrophysics Data System (ADS)

    Iida, Kazumasa; Hänisch, Jens; Trommler, Sascha; Haindl, Silvia; Kurth, Fritz; Hühne, Ruben; Schultz, Ludwig; Holzapfel, Bernhard

    2011-12-01

    We have investigated the influence of the superconducting layer thickness, d, on the structural and transport properties of Co-doped BaFe2As2 films deposited on Fe buffered MgO substrates by pulsed laser deposition. The superconducting transition temperature and the texture quality of Co-doped BaFe2As2 films improve with increasing d due to a gradual relief of the tensile strain. For d >= 90 nm an additional 110 textured component of Co-doped BaFe2As2 was observed, which leads to an upward shift in the angle-dependent critical current density at H \\parallel c . These results indicate that the grain boundaries created by the 110 textured component may contribute to the c-axis pinning.

  3. Valency configuration of transition metal impurities in ZnO

    SciTech Connect

    Petit, Leon; Schulthess, Thomas C; Svane, Axel; Temmerman, Walter M; Szotek, Zdzislawa; Janotti, Anderson

    2006-01-01

    We use the self-interaction corrected local spin-density approximation to investigate the ground state valency configuration of transition metal (TM=Mn, Co) impurities in n- and p-type ZnO. We find that in pure Zn{sub 1-x}TM{sub x}O, the localized TM{sup 2+} configuration is energetically favored over the itinerant d-electron configuration of the local spin density (LSD) picture. Our calculations indicate furthermore that the (+/0) donor level is situated in the ZnO gap. Consequently, for n-type conditions, with the Fermi energy {epsilon}F close to the conduction band minimum, TM remains in the 2+ charge state, while for p-type conditions, with {epsilon}F close to the valence band maximum, the 3+ charge state is energetically preferred. In the latter scenario, modeled here by co-doping with N, the additional delocalized d-electron charge transfers into the entire states at the top of the valence band, and hole carriers will only exist, if the N concentration exceeds the TM impurity concentration.

  4. Effects of Ho3+ and Yb3+ doping concentrations and Li+ co-doping on the luminescence of GdVO4 powders

    NASA Astrophysics Data System (ADS)

    Gavrilović, Tamara V.; Jovanović, Dragana J.; Trandafilović, Lidija V.; Dramićanin, Miroslav D.

    2015-07-01

    We present the structural and luminescent properties of Ho3+/Yb3+-doped GdVO4 and Li+-co-doped GdVO4:Ho3+/Yb3+ powder phosphors. The materials were prepared by high-temperature solid state method with different concentrations (between 0.5 and 2 mol%) of dopant Ho3+ emitting ions and different concentrations (between 5 and 20 mol%) of sensitizer Yb3+ ions. The dopant ions provided the material with intense luminescence emission; green emissions (centered at 542 nm from 5F4,5S2 → 5I8 electronic transition of Ho3+ ions) resulted upon ultraviolet excitation, and red (centered at 659 nm from 5F5 → 5I8 electronic transition of Ho3+ ions) upon near-infrared excitation. The co-doped materials were obtained under identical experimental conditions by adding Li+ ions (5, 7.5, 10, and 15 mol%). The powders co-doped with 7.5 mol% Li+ ions showed a downconversion emission intensity more than twice as high as the samples without Li+ co-doping. In upconversion, an equal intensification of emission was achieved with co-doping with 10 mol% Li+. The influences of Ho3+/Yb3+ concentration ratio and Li+ co-doping level on emission color and emission branching was investigated and analyzed for both downconversion and upconversion emission. Increasing Yb3+ concentration was found to increase the share of dominant emission (green) in downconversion, but decreased the share of dominant emission (red) in upconversion.

  5. PL and EL characteristics in Bi- and rare earth-co-doped (La1-XGaX)2O3 phosphor thin films prepared by magnetron sputtering

    NASA Astrophysics Data System (ADS)

    Miyata, Toshihiro; Nishi, Yuki; Minami, Tadatsugu

    2011-12-01

    Multicolor photoluminescence (PL) and electroluminescence (EL) were observed from newly developed Bi- and rare earth (RE)-co-doped (La1-XGaX)2O3 ((La1-XGaX)2O3:Bi,RE) phosphor thin films. (La1-XGaX)2O3:Bi,RE phosphor thin films were prepared by varying the Ga content (Ga/(La+Ga) atomic ratio) or the co-doped RE content (RE/(RE+La+Ga) atomic ratio) under co-doping Bi at a constant content (Bi/(Bi+La+Ga) atomic ratio) of 3 at.% using a combinatorial r.f. magnetron sputtering deposition method. High PL intensity was obtained in postannealed (La0.9Ga0.1)2O3:Bi,RE phosphor thin films prepared with a Ga content around 10 at.%; TFEL devices fabricated using the phosphor thin films exhibited high luminance. The obtained luminance intensities in EL and PL in the phosphor thin films prepared with various contents of co-doped RE, such as Dy, Er, Eu, Tb and Tm changed considerably as the kind and content of RE were varied. Color changes from blue and blue-green to various colors in PL and EL emissions, respectively, were obtained in postannealed (La0.9Ga0.1)2O3:Bi,RE phosphor thin films, i.e., films prepared by co-doping Bi at a constant content with various REs at varying levels of content. All the observed emission peaks in PL and EL from (La0.9Ga0.1)2O3:Bi,RE phosphor thin films were assigned to either the broad emission originating from the transition in Bi3+ or the visible emission peaks originating from the transition in the co-doped trivalent RE ion.

  6. Erbium and nitrogen co-doped SrTiO{sub 3} with highly visible light photocatalytic activity and stability by solvothermal synthesis

    SciTech Connect

    Xu, Jing; Wei, Yuelin; Huang, Yunfang; Wang, Jing; Zheng, Xuanqing; Sun, Zhixian; Wu, Ying; Tao, Xinling; Fan, Leqing; Wu, Jihuai

    2015-10-15

    Highlights: • Er/N co-doped SrTiO{sub 3} was prepared by a solvothermal process at low temperature. • The co-doping induces the band gap narrowing and prominent absorbance in visible light region. • The samples show excellent catalytic activity and stability under visible light irradiation. - Abstract: Erbium–nitrogen co-doped SrTiO{sub 3} photocatalysts have been synthesized by a facile solvothermal method. The resulting samples were analyzed by FE-SEM, XRD, BET-surface area and UV–vis. The UV–vis absorption spectra of these powders indicated that erbium–nitrogen co-doped SrTiO{sub 3} possessed stronger absorption bands in the visible light region in comparison with that of pure SrTiO{sub 3}. The occurrence of the erbium–nitrogen co-doped cubic SrTiO{sub 3} induced the higher photocatalytic activities for the degradation of methyl orange (MO) under irradiation by ultraviolet light and visible light, respectively, being superior to that of pure SrTiO{sub 3} and commercial TiO{sub 2} (P-25) powders. In addition, the Er–N co-doped SrTiO{sub 3} (initial molar ratios of Sr/Er/N = 1:0.015:0.1, designated as S5) sample showed the best photocatalytic activity with the degradation rate as high as 98% after 30 min under the visible light irradiation. After five cycles, the photocatalytic activity of the S5 catalyst showed no significant decrease, which indicated that the photocatalysts were stable under visible light irradiation.

  7. A dual-colored bio-marker made of doped ZnO nanocrystals

    NASA Astrophysics Data System (ADS)

    Wu, Y. L.; Fu, S.; Tok, A. I. Y.; Zeng, X. T.; Lim, C. S.; Kwek, L. C.; Boey, F. C. Y.

    2008-08-01

    Bio-compatible ZnO nanocrystals doped with Co, Cu and Ni cations, surface capped with two types of aminosilanes and titania are synthesized by a soft chemical process. Due to the small particle size (2-5 nm), surface functional groups and the high photoluminescence emissions at the UV and blue-violet wavelength ranges, bio-imaging on human osteosarcoma (Mg-63) cells and histiocytic lymphoma U-937 monocyte cells showed blue emission at the nucleus and bright turquoise emission at the cytoplasm simultaneously. This is the first report on dual-color bio-images labeled by one semiconductor nanocrystal colloidal solution. Bright green emission was detected on mung bean seedlings labeled by all the synthesized ZnO nanocrystals. Cytotoxicity tests showed that the aminosilanes capped nanoparticles are non-toxic. Quantum yields of the nanocrystals varied from 79% to 95%. The results showed the potential of the pure ZnO and Co-doped ZnO nanocrystals for live imaging of both human cells and plant systems.

  8. Growth and characterization of periodically polarity-inverted ZnO structures on sapphire substrates

    SciTech Connect

    Park, Jinsub; Yao, Takafumi

    2012-10-15

    We report on the fabrication and characterization of periodically polarity inverted (PPI) ZnO heterostructures on (0 0 0 1) Al{sub 2}O{sub 3} substrates. For the periodically inverted array of ZnO polarity, CrN and Cr{sub 2}O{sub 3} polarity selection buffer layers are used for the Zn- and O-polar ZnO films, respectively. The change of polarity and period in fabricated ZnO structures is evaluated by diffraction patterns and polarity sensitive piezo-response microscopy. Finally, PPI ZnO structures with subnanometer scale period are demonstrated by using holographic lithography and regrowth techniques.

  9. Effects of Co doping on electronic structure and electric/magnetic properties of La0.1Bi0.9FeO3 ceramics

    NASA Astrophysics Data System (ADS)

    Wang, ShouYu; Feng, Yu; Liu, WeiFang; Yu, DaShu; Li, DeJun

    2013-10-01

    In this work, we report the influence of Co-doping on the electronic band structure, dielectric and magnetic properties of La0.1Bi0.9Fe1- x Co x O3 ceramics. X-ray photoelectron spectroscopy investigation shows that Co dopant can shift the valence band spectrum and core-level lines of constituent elements towards higher bind energy regions simultaneously increase the concentration of oxygen vacancies in ceramics. The effects of dopant are discussed with focus given to the Co-doping induced enhancement of electrical conductivity and resistive switching phenomena.

  10. Facile synthesis and enhanced visible light photocatalytic activity of N and Zr co-doped TiO2 nanostructures from nanotubular titanic acid precursors

    PubMed Central

    2013-01-01

    Zr/N co-doped TiO2 nanostructures were successfully synthesized using nanotubular titanic acid (NTA) as precursors by a facile wet chemical route and subsequent calcination. These Zr/N-doped TiO2 nanostructures made by NTA precursors show significantly enhanced visible light absorption and much higher photocatalytic performance than the Zr/N-doped P25 TiO2 nanoparticles. Impacts of Zr/N co-doping on the morphologies, optical properties, and photocatalytic activities of the NTA precursor-based TiO2 were thoroughly investigated. The origin of the enhanced visible light photocatalytic activity is discussed in detail. PMID:24369051

  11. Up-conversion luminescence from Er3+, Yb3+ co-doped GeO II-PbF II-Nb IIO 5 glass ceramic

    NASA Astrophysics Data System (ADS)

    Lv, Jinwen; Sang, Lanfen; Zhang, Jing; Fu, Xingguo

    2006-01-01

    The paper reports a new up-conversion luminescence material based on Yb 3+, Er 3+ co-doped germanate glass ceramic, the matrix system is GeO II-PbF II-Nb IIO 5. The luminescence characteristics of the Yb3+ , Er3+ co-doped glass ceramic have been studied. The structural properties of the germinate glass ceramic have been analysed by X-ray diffraction. Under the condition of 980nm semiconductor laser pumping, the green fluorescence intensity shows that the existence of niobate components plays an important role for up-conversion luminescence.

  12. Comparative studies of CdS, CdS:Al, CdS:Na and CdS:(Al-Na) thin films prepared by spray pyrolysis

    NASA Astrophysics Data System (ADS)

    Yılmaz, S.; Atasoy, Y.; Tomakin, M.; Bacaksız, E.

    2015-12-01

    In the present study, the spray pyrolysis technique was used to prepare pure CdS, 4 at.% Al-doped CdS, 4 at.% Na-doped CdS and (4 at.% Al, 4 at.% Na)-co-doped CdS thin films. It was found from X-ray diffraction data that all the specimens showed hexagonal wurtzite structure with the preferred orientation of (101). Scanning electron microscopy results indicated that 4 at.% Al-doping caused a grain growth in the morphology of CdS thin films whereas the 4 at.% Na-doping and (4 at.% Al, 4 at.% Na)-co-doping led to porous structure with small grains. The band gap value of CdS thin films increased to 2.42 eV after 4 at.% Al-doping. However, it reduced to 2.30 eV and 2.08 eV for 4 at.% Na-doping and (4 at.% Al, 4 at.% Na)-co-doping, respectively. The room temperature photoluminescence measurements illustrated that the peak intensity of CdS thin films enhanced with 4 at.% Al-doping while 4 at.% Na-doping and (4 at.% Al, 4 at.% Na)-co-doping caused a decline in the intensity. The maximum carrier concentration and minimum resistivity were obtained for 4 at.% Al-doped CdS thin films, which is associated with the grain growth. Furthermore, (4 at.% Al, 4 at.% Na)-co-doping gave rise to a slight reduction in the carrier concentration and a slight increment in the resistivity. As a result, it can be said that 4 at.% Al-doped CdS thin films exhibited the best electrical and optical properties, which is important for the opto-electronic applications.

  13. Conductivity and touch-sensor application for atomic layer deposition ZnO and Al:ZnO on nylon nonwoven fiber mats

    SciTech Connect

    Sweet, William J.; Oldham, Christopher J.; Parsons, Gregory N.

    2015-01-15

    Flexible electronics and wearable technology represent a novel and growing market for next generation devices. In this work, the authors deposit conductive zinc oxide films by atomic layer deposition onto nylon-6 nonwoven fiber mats and spun-cast films, and quantify the impact that deposition temperature, coating thickness, and aluminum doping have on the conductivity of the coated substrates. The authors produce aluminum doped zinc oxide (AZO) coated fibers with conductivity of 230 S/cm, which is ∼6× more conductive than ZnO coated fibers. Furthermore, the authors demonstrate AZO coated fibers maintain 62% of their conductivity after being bent around a 3 mm radius cylinder. As an example application, the authors fabricate an “all-fiber” pressure sensor using AZO coated nylon-6 electrodes. The sensor signal scales exponentially under small applied force (<50 g/cm{sup 2}), yielding a ∼10{sup 6}× current change under 200 g/cm{sup 2}. This lightweight, flexible, and breathable touch/force sensor could function, for example, as an electronically active nonwoven for personal or engineered system analysis and diagnostics.

  14. Evolution of structural and magnetic properties of Co-doped TiO2 thin films irradiated with 100 MeV Ag7+ ions

    NASA Astrophysics Data System (ADS)

    Mohanty, P.; Singh, V. P.; Mishra, N. C.; Ojha, S.; Kanjilal, D.; Rath, Chandana

    2014-08-01

    In continuation to our earlier studies where we have shown room temperature ferromagnetism observed in TiO2 and Co-doped TiO2 (CTO) thin films independent of their phase (Mohanty et al 2012 J. Phys. D: Appl. Phys. 45 325301), here the modifications in structure and magnetic properties in CTO thin films using 100 MeV Ag7+ ion irradiation are reported. Owing to the important role of defects in tailoring the magnetic properties of the material, we vary the ion fluence from 5 × 1011 to 1 × 1012 ions cm-2 to create post-deposition defects. While the film deposited under 0.1 mTorr oxygen partial pressure retains its crystallinity showing radiation-resistant behaviour even at a fluence of 1 × 1012 ions cm-2, films deposited under 1 to 300 mTorr oxygen partial pressure becomes almost amorphous at the same fluence. Using Poisson's law, the diameter of the amorphized region surrounding the ion path is calculated to be ˜4.2 nm from the x-ray diffraction peak intensity ((1 1 0) for rutile phase) as a function of ion fluence. The saturation magnetization (Ms) decreases exponentially similar to the decrease in x-ray peak intensity with fluence, indicating magnetic disordered region surrounding the ion path. The diameter of the magnetic disordered region is found to be ˜6.6 nm which is larger than the diameter of the amorphized latent track. Therefore, it is confirmed that swift heavy ion irradiation induces a more significant magnetic disorder than the structural disorder.

  15. Investigation of impurity phase formation for (ZnO) 1- x(TMO) x bulk samples formed by ball milling

    NASA Astrophysics Data System (ADS)

    Karamat, S.; Ke, C.; Tan, T. L.; Zhou, W.; Lee, P.; Rawat, R. S.

    2009-02-01

    Structural, compositional, optical and magnetic properties have been studied for polycrystalline (ZnO) 0.90(TMO) 0.10 bulk samples, where TM (transition metal ions) = Mn, Fe, and Co. The quantitative Rietveld analysis showed relatively higher percentage of impurity (spinel and oxide) phases of about 33.76, 52.38 and 55.61% for Mn, Fe and Co doped ZnO samples, respectively. The de-convolution of XPS spectra indicated the presence of different phases. The appearance of shaking satellites in XPS spectra confirmed the presence of different valence states of dopant ions. The red shift in energy band gap, estimated from reflectance UV-vis spectroscopy, was observed for all TM doped bulk samples. For Mn doping, paramagnetic behavior was obtained while for Co and Fe, weak ferromagnetic behavior was observed at room temperature.

  16. Absolute quantum cutting efficiency of Tb{sup 3+}-Yb{sup 3+} co-doped glass

    SciTech Connect

    Duan, Qianqian; Qin, Feng; Zhang, Zhiguo; Zhao, Hua; Cao, Wenwu

    2013-12-07

    The absolute quantum cutting efficiency of Tb{sup 3+}-Yb{sup 3+} co-doped glass was quantitatively measured by an integrating sphere detection system, which is independent of the excitation power. As the Yb{sup 3+} concentration increases, the near infrared quantum efficiency exhibited an exponential growth with an upper limit of 13.5%, but the visible light efficiency was reduced rapidly. As a result, the total quantum efficiency monotonically decreases rather than increases as theory predicted. In fact, the absolute quantum efficiency was far less than the theoretical value due to the low radiative efficiency of Tb{sup 3+} (<61%) and significant cross-relaxation nonradiative loss between Yb{sup 3+} ions.

  17. The photoluminescence and structural properties of (Ce, Yb) co-doped silicon oxides after high temperature annealing

    SciTech Connect

    Heng, C. L. Li, J. T.; Su, W. Y.; Yin, P. G.; Finstad, T. G.

    2015-01-28

    We studied the photoluminescence (PL) and structural properties of Ce and Yb co-doped silicon oxide films after high temperature annealing. The PL spectra of Ce{sup 3+} and Yb{sup 3+} ions were sensitive to the structural variation of the films, and the Yb PL intensities were significantly enhanced especially upon 1200 °C annealing. X-ray diffraction, transmission electron microscopy, and X-ray photoelectron spectroscopy, indicated that rare earth silicates and the CeO{sub 2} phase had formed in the oxides. The proportions of the phases varied with the “nominal Si-richness” of the films. Energy transfer from the excited Ce{sup 3+} to Yb{sup 3+} can be inferred from both PL excitation and decay spectra.

  18. Pr3+/Yb3+ co-doped beta-phase NaYF4 microprisms: controlled synthesis and upconversion luminescence.

    PubMed

    Gao, Wei; Zheng, Hairong; Gao, Dangli; He, Enjie; Li, Jiao; Tu, Yinxun

    2014-06-01

    Pr3+/Yb3+ co-doped hexagonal NaYF4(beta-NaYF4) microprisms were synthesized by the hydrothermal method, and ethylenediaminetetraacetic acid (EDTA) was introduced to control the size of the microcrystal samples. Bright upconverted fluorescence emission was observed when the samples were excited with an infrared (IR) laser at 976.4 nm. The emission was found to originate from the transitions of 3P0-3F2, 3P0-3H6 or 1G4-3H4, 3P1-3H6, 3P0-3H5, 3P1-3H5, and 3P0-3H4 of Pr3+ ions. Possible mechanisms for upconversion fluorescence and concentration dependence as well as the crystal structure and its formation of NaYF4:Yb3+/Pr3+ microprisms were explored and discussed based on the experimental observations. PMID:24738388

  19. Sustained phase separation and spin glass in Co-doped KxFe2-ySe2 single crystals

    DOE PAGESBeta

    Ryu, Hyejin; Wang, Kefeng; Opacic, M.; Lazarevic, N.; Warren, J. B.; Popovic, Z. V.; Bozin, Emil S.; Petrovic, C.

    2015-11-19

    We describe Co substitution effects in KxFe2-y-zCozSe2 (0.06 ≤ z ≤ 1.73) single crystal alloys. By 3.5% of Co doping superconductivity is suppressed whereas phase separation of semiconducting K2Fe4Se5 and superconducting/metallic KxFe2Se2 is still present. We show that the arrangement and distribution of superconducting phase (stripe phase) is connected with the arrangement of K, Fe and Co atoms. Semiconducting spin glass is found in proximity to superconducting state, persisting for large Co concentrations. At high Co concentrations ferromagnetic metallic state emerges above the spin glass. This is coincident with changes of the unit cell, arrangement and connectivity of stripemore » conducting phase.« less

  20. Compact, efficient, scalable neodymium laser co-doped with activator ions and pumped by visible laser diodes

    NASA Astrophysics Data System (ADS)

    Scheps, Richard

    1994-02-01

    Efficient, low threshold laser emission from a laser crystal doped with chromium and neodymium ions is obtained when pumped by visible laser diodes in the range of 610 nm to 680 nm. A typical laser Cr,Nd:GSGG crystal having an extraordinarily broad absorption bandwidth allows high pump efficiencies when using visible laser diodes, particularly in comparison to the Nd:YAG laser. The broad absorption bandwidth tolerance of the Cr,Nd:GSGG crystal to the pumping wavelengths allows visible diode pumping of the neodymium transition without regard to the wavelength of the visible diodes. Longitudinal or end-pumping to take advantage of the emission properties of the visible laser diodes, a nearly hemispherical laser resonator configuration and other co-doped Cr,Nd laser host materials are disclosed.

  1. C-band single-longitudinal mode lanthanum co-doped bismuth based erbium doped fiber ring laser.

    PubMed

    Qureshi, Khurram Karim; Feng, X H; Zhao, L M; Tam, H Y; Lu, C; Wai, P K A

    2009-08-31

    We propose and demonstrate a stable, tunable and narrow linewidth C-band lanthanum co-doped bismuth based erbium doped fiber (EDF) ring laser with single longitudinal mode (SLM) operation. A free space thin film filter acts as a wavelength discriminative component selecting a few oscillating modes while a Lyot filter formed by a polarization maintaining (PM) fiber and a linear polarizer further discriminates and selects SLM efficiently. A power stability of < or = 0.05 dB, central wavelength variation of < or = 0.02 nm, a side-mode suppression ratio (SMSR) of at least > 43 dB, and a linewidth of about 1.3 kHz have been experimentally demonstrated. PMID:19724634

  2. Residual stress-dependent electric conductivity of sputtered co-doped CeO{sub 2} thin-film electrolyte

    SciTech Connect

    Liu Wei; Liu Hongqin; Ou Gang; Pan Wei

    2011-04-15

    Sm{sup 3+} and Nd{sup 3+} co-doped ceria thin-film electrolytes have been deposited on polycrystalline alumina substrates via RF magnetron sputtering. Electric conductivity is evaluated with respect to the residual stress in the film by sin{sup 2} {psi}-methodology, indicating that an in-plane tensile stress is applied to the as-deposited film. The stress in the film increases as annealing temperature decreases, and there is an enlarged crystal lattice. The results also reveal that the annealed film with a greater stress shows a higher electric conductivity, which might be due to the lower activation energy. The conductivity of the film annealed at 600 deg. C is as high as 0.009 S cm{sup -1} at 500 deg. C, and the residual stress is determined to be 542.70 MPa at room temperature.

  3. Thermoluminescence dosimetry properties and kinetic parameters of lithium potassium borate glass co-doped with titanium and magnesium oxides.

    PubMed

    Hashim, S; Alajerami, Y S M; Ramli, A T; Ghoshal, S K; Saleh, M A; Abdul Kadir, A B; Saripan, M I; Alzimami, K; Bradley, D A; Mhareb, M H A

    2014-09-01

    Lithium potassium borate (LKB) glasses co-doped with TiO2 and MgO were prepared using the melt quenching technique. The glasses were cut into transparent chips and exposed to gamma rays of (60)Co to study their thermoluminescence (TL) properties. The TL glow curve of the Ti-doped material featured a single prominent peak at 230 °C. Additional incorporation of MgO as a co-activator enhanced the TL intensity threefold. LKB:Ti,Mg is a low-Z material (Z(eff)=8.89) with slow signal fading. Its radiation sensitivity is 12 times lower that the sensitivity of TLD-100. The dose response is linear at doses up to 10(3) Gy. The trap parameters, such as the kinetics order, activation energy, and frequency factor, which are related to the glow peak, were determined using TolAnal software. PMID:24929526

  4. Identical spin fluctuations in Cu- and Co-doped BaFe2As2 independent of electron doping

    NASA Astrophysics Data System (ADS)

    Grafe, H.-J.; Gräfe, U.; Dioguardi, A. P.; Curro, N. J.; Aswartham, S.; Wurmehl, S.; Büchner, B.

    2014-09-01

    We present As75 nuclear magnetic resonance measurements on single crystals of BaFe2As2, BaFe1.8Co0.2As2, and BaFe1.82Cu0.18As2. While only Co doping induces bulk superconductivity on a broad doping range, the spin fluctuations probed by the nuclear spin-lattice relaxation rate (T1T )-1 are identical for both dopings down to Tc. Below this temperature, (T1T)-1 of the Cu-doped sample continues to rise, proving that (a) there is a quantum critical point below the superconducting dome, and (b) adding electrons does not affect the spin fluctuations. Consequently, we analyze the Knight shift data in terms of a two-component scenario, with one hyperfine coupling to an itinerant degree of freedom and the other to Fe moments.

  5. Electrodeposited Co-doped NiSe2 nanoparticles film: a good electrocatalyst for efficient water splitting.

    PubMed

    Liu, Tingting; Asiri, Abdullah M; Sun, Xuping

    2016-02-21

    In this communication, we report that a Co-doped NiSe2 nanoparticles film electrodeposited on a conductive Ti plate (Co0.13Ni0.87Se2/Ti) behaves as a robust electrocatalyst for both HER and OER in strongly basic media, with good activity over a NiSe2/Ti counterpart. This Co0.13Ni0.87Se2/Ti catalytic electrode delivers 10 mA cm(-2) at an overpotential of 64 mV for HER and 100 mA cm(-2) at an overpotential of 320 mV for OER in 1.0 M KOH. A voltage of only 1.62 V is required to drive 10 mA cm(-2) for the two-electrode alkaline water electrolyzer using Co0.13Ni0.87Se2/Ti as an anode and cathode. PMID:26866797

  6. NIR to visible frequency upconversion in Er3+ and Yb3+ co-doped BaZrO3 phosphor

    NASA Astrophysics Data System (ADS)

    Singh, Vijay; Rai, Vineet Kumar; Al-Shamery, Katharina; Haase, Markus; Kim, Sang Hwan

    2013-05-01

    Phosphor powders of Yb3+ co-doped BaZrO3:Er3+ have been prepared by the urea combustion route. The formation of single-phase BaZrO3:Er3+ and BaZrO3:Er3+,Yb3+ was confirmed by X-ray powder diffraction (XRD). Green and red luminescence along with a weaker blue emission is observed upon excitation at ˜978 nm with a diode laser. These emissions are caused by frequency upconversion in the Er3+-doped BaZrO3 (BZO) phosphor. Both the green and red upconversion emissions of the Er3+ are enhanced by about ˜3 and ˜43 times respectively when triply ionized ytterbium is incorporated as a co-dopant. The frequency upconversion processes responsible for the blue, green and red emissions are discussed on the basis of the experimental data.

  7. Controlling the 1 μm spontaneous emission in Er/Yb co-doped fiber amplifiers.

    PubMed

    Sobon, Grzegorz; Kaczmarek, Pawel; Antonczak, Arkadiusz; Sotor, Jaroslaw; Abramski, Krzysztof M

    2011-09-26

    In this paper we present our experimental studies on controlling the amplified spontaneous emission (ASE) from Yb(3+) ions in Er/Yb co-doped fiber amplifiers. We propose a new method of controlling the Yb-ASE by stimulating a laser emission at 1064 nm in the amplifier, by providing a positive 1 μm signal feedback loop. The results are discussed and compared to a conventional amplifier setup without 1 μm ASE control and to an amplifier with auxiliary 1064 nm seeding. We have shown, that applying a 1064 nm signal loop in an Er/Yb amplifier can increase the output power at 1550 nm and provide stable operation without parasitic lasing at 1 μm. PMID:21996851

  8. Luminescence studies of Sm3+ single-doped and Sm3+, Dy3+ co-doped NaGdTiO4 phosphors

    NASA Astrophysics Data System (ADS)

    Li, Xiangping; Wang, Xin; Li, Xuejing; Cheng, Lihong; Tong, Lili; Wang, Wenlong; Sun, Jiashi; Zhang, Jinsu; Chen, Baojiu

    2016-01-01

    Sm3+ single-doped and Sm3+, Dy3+ co-doped NaGdTiO4 phosphors were synthesized via a traditional high temperature solid-state reaction method. The crystal structure was characterized by means of x-ray diffraction. The luminescence properties and energy transfer in Sm3+ single-doped and Sm3+, Dy3+ co-doped NaGdTiO4 phosphors were systematically studied. The electric dipole-dipole interaction between Sm3+ ions was identified as the main mechanism for the concentration dependent fluorescence quenching in Sm3+ single-doped samples. It is confirmed that there is almost no energy transfer between Sm3+ and Dy3+ in Sm3+, Dy3+ co-doped samples. The introduction of Sm3+ can compensate the red emission component and adjust the colorimetric performance of Dy3+-doped NaGdTiO4 phosphors. Moreover, different emitting colors can be obtained from Sm3+, Dy3+ co-doped NaGdTiO4 phosphor by changing the excitation pathway.

  9. Pulsed Laser Synthesis of Er3+/Yb3+ Co-Doped CaMoO4 Colloidal Nanocrystal and Its Upconversion Luminescence.

    PubMed

    Cho, Kyoungwon; Choi, Jaeha; Kim, Kang Min; Kim, Tae Wan; Lee, Jung-Il; Ryu, Jeong Ho

    2016-06-01

    We report a novel synthetic route for Er3+Yb3+ co-doped calcium molybdate (CaMoO4) nanoparticles by pulsed laser ablation in ethanol. The crystalline phase, particle morphology, laser ablation mechanism and upconversion (UC) luminescent properties are investigated. Stable colloidal suspensions consisting of well-dispersed Er3+/Yb3+ co-doped CaMoO4 nanoparticles could be obtained without any surfactant. Under 980 nm excitation, Er3+/Yb3+ co-doped nanocolloidal CaMoO4 suspension had a weak red emission near 670 nm and strong green UC emissions at 530 and 550 nm, corresponding to the intra 4f transitions of Er3+ (4F(9/2), 2H(11/2), 4S(3/2)) --> Er3+ (4I(15/2)). The Er3+/Yb3+ co-doped nanocrystalline CaMoO4 suspension exhibited strong green emission visible to the naked eyes and a possible UC mechanism depending on the pump power dependence is discussed in detail. PMID:27427715

  10. Thermoluminescence response of K2Ca2(SO4)3 nanophosphor Co-doped with Eu and Ce for gamma ray dosimetry

    NASA Astrophysics Data System (ADS)

    Patil, B. J.; Bhadane, Mahesh S.; Mandlik, N. T.; Dahiwale, S. S.; Kulkarni, M. S.; Bhatt, B. C.; Bhoraskar, V. N.; Dhole, S. D.

    2015-06-01

    K2Ca2(SO4)3 nanophosphors co-doped with Eu and Ce were synthesized by the chemical co-precipitation method. These samples were further annealed at 700 °C structural reformation. The structural and morphological characteristics were studied using XRD and TEM techniques. The particle size calculated from XRD spectra was around 35 nm. The as synthesized sample shows cubic structure annealed at 700 °C. The as synthesized and annealed sample of K2Ca2(SO4)3: EuCe were irradiated with Co60 gamma rays for the doses from 2Gy to 1kGy. The TL characteristic sample of co-doped were studied for the dosimetric application by gamma radiation. The TL spectrum of annealed sample has single peaked at 160 °C. The Eu doped sample has a high TL sensitivity than Ce doped sample. But after co-doping with Eu and Ce, TL intensity observed to be decreased. The decrees in TL peak intensity of the phosphor on co-doping of Eu and Ce gives an insight into the emission mechanism of the phosphor which involves energy transfer from Eu to Ce. The TL response of all the samples were found to be linear for the dose from 2 Gy to 1 KGy. Therefore, K2Ca2(SO4)3: EuCe nanophosphor can be used for the measurement of high dose of gamma radiation.

  11. Lu3+/Yb3+ and Lu3+/Er3+ co-doped antimony selenide nanomaterials: synthesis, characterization, and electrical, thermoelectrical, and optical properties

    PubMed Central

    2013-01-01

    Lu3+/Yb3+ and Lu3+/Er3+ co-doped Sb2Se3 nanomaterials were synthesized by co-reduction method in hydrothermal condition. Powder X-ray diffraction patterns indicate that the LnxLn′xSb2−2xSe3 Ln: Lu3+/Yb3+ and Lu3+/Er3+ crystals (x = 0.00 − 0.04) are isostructural with Sb2Se3. The cell parameters were increased for compounds upon increasing the dopant content (x). Scanning electron microscopy and transmission electron microscopy images show that co-doping of Lu3+/Yb3+ ions in the lattice of Sb2Se3 produces nanorods, while that in Lu3+/Er3+ produces nanoparticles, respectively. The electrical conductivity of co-doped Sb2Se3 is higher than that of the pure Sb2Se3 and increases with temperature. By increasing the concentration of Ln3+ions, the absorption spectrum of Sb2Se3 shows red shifts and some intensity changes. In addition to the characteristic red emission peaks of Sb2Se3, emission spectra of co-doped materials show other emission bands originating from f-f transitions of the Yb3+ ions. PMID:23537193

  12. Hydrothermal fabrication of multi-functional Eu3+ and Tb3+ co-doped BiPO4: Photocatalytic activity and tunable luminescence properties

    NASA Astrophysics Data System (ADS)

    Wang, Yao; Huang, Hongwei; Quan, Chaoming; Tian, Na; Zhang, Yihe

    2016-01-01

    We demonstrated for first time the tunable photoluminescence (PL) properties and photocatalytic activity of the Tb3+ and Eu3+ co-doped BiPO4 assemblies. They are fabricated via a facile hydrothermal approach. Through co-doping of Eu3+ and Tb3+ ions and changing the doping ratio, the emission color of the co-doped BiPO4 phosphors can be tuned precisely from green to yellow and red. Meanwhile, a very efficient energy transfer from Tb3+ to Eu3+ can be observed. Fascinatingly, a warmwhite color has been realized in the co-doped sample by tuning the ratio of Tb3+/Eu3+ to a certain value as displayed in the CIE chromaticity diagram. The doped BiPO4 samples also exhibit significantly enhanced photocatalytic activity compared to the pristine BiPO4 pertaining to Rhodamine (RhB) degradation under UV light. This enhancement should be attributed to the trapping electron effect induced by ion doping that endows BiPO4 with high separation of photoinduced electron-hole pairs, thereby greatly promoting the photocatalytic reactivity. It was corroborated by the electrochemical impedance spectra (EIS). Moreover, the crystal structure, microstructure and optical properties of as-prepared samples were investigated in details.

  13. Energy transfer based photoluminescence properties of co-doped (Er3+ + Pr3+): PEO + PVP blended polymer composites for photonic applications

    NASA Astrophysics Data System (ADS)

    Naveen Kumar, K.; Kang, Misook; Bhaskar Kumar, G.; Ratnakaram, Y. C.

    2016-04-01

    Er3+, Pr3+ singly doped and co-doped PEO + PVP polymer composites have been synthesized by conventional solution casting method. The structural analysis has been carried out for all these polymer composites from XRD analysis. Raman spectral studies confirm the ion-polymer interactions and polymer complex formation. Thermal properties of pure polymer film has also been clearly elucidated by TG/DTA profiles. Well defined optical absorption bands pertaining to Er3+ and Pr3+ are observed in the absorption spectral profile and these bands are assigned with corresponding electronic transitions. The polymer films containing singly doped Er3+ and Pr3+ ions have displayed green and red emissions at 510 nm (2H11/2 → 4I15/2) and 688 nm (3P0 → 3F3) respectively under UV excitation source. Comparing the emission spectra of singly Er3+ and co-doped Er3+ + Pr3+: PEO + PVP polymer films, a significant red emission pertaining to Pr3+ions is remarkably enhanced in co-doped polymer system. This could be ascribed to possible energy transfer from Er3+ to Pr3+ in co-doped polymer system. The energy transfer mechanism is clearly demonstrated using their emission performances, overlapped spectral profiles and also life time decay dynamics. Thus, it could be suggested that Er3+: PEO + PVP, Pr3+: PEO + PVP and (Er3+ + Pr3+): PEO + PVP blended polymer films are potential materials for several photonic applications.

  14. Large power factor and anomalous Hall effect and their correlation with observed linear magneto resistance in Co-doped Bi2Se3 3D topological insulator

    NASA Astrophysics Data System (ADS)

    Singh, Rahul; Shukla, K. K.; Kumar, A.; Okram, G. S.; Singh, D.; Ganeshan, V.; Lakhani, Archana; Ghosh, A. K.; Chatterjee, Sandip

    2016-09-01

    Magnetoresistance (MR), thermo power, magnetization and Hall effect measurements have been performed on Co-doped Bi2Se3 topological insulators. The undoped sample shows that the maximum MR as a destructive interference due to a π-Berry phase leads to a decrease of MR. As the Co is doped, the linearity in MR is increased. The observed MR of Bi2Se3 can be explained with the classical model. The low temperature MR behavior of Co doped samples cannot be explained with the same model, but can be explained with the quantum linear MR model. Magnetization behavior indicates the establishment of ferromagnetic ordering with Co doping. Hall effect data also supports the establishment of ferromagnetic ordering in Co-doped Bi2Se3 samples by showing the anomalous Hall effect. Furthermore, when spectral weight suppression is insignificant, Bi2Se3 behaves as a dilute magnetic semiconductor. Moreover, the maximum power factor is observed when time reversal symmetry (TRS) is maintained. As the TRS is broken the power factor value is decreased, which indicates that with the rise of Dirac cone above the Fermi level the anomalous Hall effect and linearity in MR increase and the power factor decreases.

  15. Large power factor and anomalous Hall effect and their correlation with observed linear magneto resistance in Co-doped Bi2Se3 3D topological insulator.

    PubMed

    Singh, Rahul; Shukla, K K; Kumar, A; Okram, G S; Singh, D; Ganeshan, V; Lakhani, Archana; Ghosh, A K; Chatterjee, Sandip

    2016-09-21

    Magnetoresistance (MR), thermo power, magnetization and Hall effect measurements have been performed on Co-doped Bi2Se3 topological insulators. The undoped sample shows that the maximum MR as a destructive interference due to a π-Berry phase leads to a decrease of MR. As the Co is doped, the linearity in MR is increased. The observed MR of Bi2Se3 can be explained with the classical model. The low temperature MR behavior of Co doped samples cannot be explained with the same model, but can be explained with the quantum linear MR model. Magnetization behavior indicates the establishment of ferromagnetic ordering with Co doping. Hall effect data also supports the establishment of ferromagnetic ordering in Co-doped Bi2Se3 samples by showing the anomalous Hall effect. Furthermore, when spectral weight suppression is insignificant, Bi2Se3 behaves as a dilute magnetic semiconductor. Moreover, the maximum power factor is observed when time reversal symmetry (TRS) is maintained. As the TRS is broken the power factor value is decreased, which indicates that with the rise of Dirac cone above the Fermi level the anomalous Hall effect and linearity in MR increase and the power factor decreases. PMID:27419361

  16. Pulsed-laser-assisted synthesis of a Tm3+/Yb3+ co-doped CaMoO4 colloidal nanocrystal and its upconversion luminescence

    NASA Astrophysics Data System (ADS)

    Cho, Kyoungwon; Choi, Jaeha; Lee, Jung-Il; Ryu, Jeong Ho

    2016-01-01

    We report a novel synthetic route for the synthesis of Tm3+/Yb3+ co-doped calcium molybdate (CaMoO4) nanoparticles by using pulsed laser ablation in ethanol. The crystalline phase, particle morphology, particle size distribution, laser ablation mechanism, and upconversion (UC) luminescent properties are investigated. Stable colloidal suspensions consisting of well-dispersed Tm3+/Yb3+ co-doped CaMoO4 nanoparticles with a narrow size distribution could be obtained without any surfactant. Under 980-nm excitation, a Tm3+/Yb3+ co-doped nanocolloidal CaMoO4 suspension showed bright blue emission at a wavelength near 475 nm, which was generated by the 1G4 → 3H6 transition, and a weak red emission at a wavelength near 650 nm due to the 3F2 → 3H6 transition. The Tm3+/Yb3+ co-doped nanocrystalline CaMoO4 suspension exhibited a strong blue emission visible to the naked eyes, and a possible UC mechanism that depends on the pump-power dependence is discussed in detail.

  17. High fluorescence S, N co-doped carbon dots as an ultra-sensitive fluorescent probe for the determination of uric acid.

    PubMed

    Wang, Haiyan; Lu, Qiujun; Hou, Yuxin; Liu, Yalan; Zhang, Youyu

    2016-08-01

    Sulfur, nitrogen co-doped carbon dots (S, N co-doped C-dots) as highly selective fluorescent probe for uric acid (UA) detection were designed. The S, N co-doped C-dots with high quantum yield of 73.1% were prepared by hydrothermal method. It was found that the fluorescence of S, N co-doped C-dots was quenched apparently by hydroxyl radicals from Fenton reaction between H2O2 and Fe(2+). The production of H2O2 originated from the oxidization of UA by uricase. Therefore, an optical biosensor was developed for the detection of UA based on Fenton reaction and enzymatic reaction. Under the optimized conditions, two linear relationships between the ratio of fluorescence quenching of the C-dots and UA concentration were found in the range of 0.08-10µM and 10-50µM, respectively. The detection limit was down to 0.07µM. Moreover, the proposed biosensor was successfully applied to the detection of uric acid in human serum samples. PMID:27216657

  18. Significant enhancement in the photocatalytic activity of N, W co-doped TiO2 nanomaterials for promising environmental applications.

    PubMed

    Thind, Sapanbir S; Wu, Guosheng; Tian, Min; Chen, Aicheng

    2012-11-30

    In this work, a mesoporous N, W co-doped TiO(2) photocatalyst was synthesized via a one-step solution combustion method, which utilized urea as the nitrogen source and sodium tungstate as the tungsten source. The photocatalytic activity of the N, W co-doped TiO(2) photocatalyst was significantly enhanced by a facile UV pretreatment approach and was evaluated by measuring the rate of photodegradation of Rhodamine B under both UV and visible (λ > 420) light. Following the UV pretreatment, the UV photocatalytic activity of the N, W co-doped TiO(2) was doubled. In terms of visible light activity, the UV pretreatment resulted in an extraordinary >12 fold improvement. In order to gain insight into this substantial enhancement, the N, W co-doped TiO(2) photocatalysts were studied using x-ray diffraction, transmission electron microscopy, N(2) physisorption, UV-vis absorbance spectroscopy and x-ray photoelectron spectroscopy prior to and following the UV pretreatment. Our experimental results have revealed that this significant augmentation of photocatalytic activity may be attributed to several synergetic factors, including increase of the specific surface area, reduction of the band gap energy and the removal of carbon impurities. PMID:23110785

  19. Improved performance of Co-doped Li2O cathodes for lithium-peroxide batteries using LiCoO2 as a dopant source

    NASA Astrophysics Data System (ADS)

    Kobayashi, Hiroaki; Hibino, Mitsuhiro; Ogasawara, Yoshiyuki; Yamaguchi, Kazuya; Kudo, Tetsuichi; Okuoka, Shin-ichi; Yonehara, Koji; Ono, Hironobu; Sumida, Yasutaka; Oshima, Masaharu; Mizuno, Noritaka

    2016-02-01

    We recently proposed a new battery system based on the redox of lithium peroxide (Li2O2)/lithium oxide (Li2O) at the cathode (lithium-peroxide battery system). In this system, the use of Li2O with cobalt ions partially substituted for lithium ions (Co-doped Li2O) is key to its realization. In this study, to further improve the cell performance, we prepare various Co-doped Li2O samples by a mechanochemical process using different cobalt source materials (e.g., LiCoO2, Co3O4, and CoO) and comparatively investigate them. Amongst the investigated cathode materials, the Co-doped Li2O sample prepared using LiCoO2 with a Co/(Co + Li) ratio of 0.09 exhibits the best performance. Monitoring of the pressure in the cell reveals that this Co-doped Li2O cathode can be charged to 270 mAh g-1 without O2 evolution involving its decomposition. Charge and discharge at 270 mAh g-1 is repeated more than 50 times. In addition, the rate-capability tests reveals that the redox reaction between peroxide and oxide ions is fast and that the cathode can be discharged at a high current density of 1000 mA g-1.

  20. Lu3+/Yb3+ and Lu3+/Er3+ co-doped antimony selenide nanomaterials: synthesis, characterization, and electrical, thermoelectrical, and optical properties

    NASA Astrophysics Data System (ADS)

    Hanifehpour, Younes; Joo, Sang Woo; Min, Bong-Ki

    2013-03-01

    Lu3+/Yb3+ and Lu3+/Er3+ co-doped Sb2Se3 nanomaterials were synthesized by co-reduction method in hydrothermal condition. Powder X-ray diffraction patterns indicate that the Ln x Ln' x Sb2-2 x Se3 Ln: Lu3+/Yb3+ and Lu3+/Er3+ crystals ( x = 0.00 - 0.04) are isostructural with Sb2Se3. The cell parameters were increased for compounds upon increasing the dopant content ( x). Scanning electron microscopy and transmission electron microscopy images show that co-doping of Lu3+/Yb3+ ions in the lattice of Sb2Se3 produces nanorods, while that in Lu3+/Er3+ produces nanoparticles, respectively. The electrical conductivity of co-doped Sb2Se3 is higher than that of the pure Sb2Se3 and increases with temperature. By increasing the concentration of Ln3+ions, the absorption spectrum of Sb2Se3 shows red shifts and some intensity changes. In addition to the characteristic red emission peaks of Sb2Se3, emission spectra of co-doped materials show other emission bands originating from f- f transitions of the Yb3+ ions.