Influences of film thickness on the structural, electrical and optical properties of CuAlO2 thin films

NASA Astrophysics Data System (ADS)

Dong, Guobo; Zhang, Ming; Wang, Mei; Li, Yingzi; Gao, Fangyuan; Yan, Hui; Diao, Xungang

2014-07-01

CuAlO2 films with different thickness were prepared by the radio frequency magnetron sputtering technique. The structural, electrical and optical properties of CuAlO2 were studied by X-ray diffraction, atomic force microscope, UV-Vis double-beam spectrophotometer and Hall measurements. The results indicate that the single phase hexagonal CuAlO2 is formed and the average grain size of CuAlO2 films increases with increasing film thickness. The results also exhibit that the lowering of bandgap and the increase of electrical conductivity of CuAlO2 films with the increase of their thickness, which are attributed to the improvement of the grain size and the anisotropic electrical property. According to the electrical and optical properties, the biggest figure of merit is achieved for the CuAlO2 film with the appropriate thickness of 165 nm.

Unprecedented Al supersaturation in single-phase rock salt structure VAlN films by Al+ subplantation

NASA Astrophysics Data System (ADS)

Greczynski, G.; Mráz, S.; Hans, M.; Primetzhofer, D.; Lu, J.; Hultman, L.; Schneider, J. M.

2017-05-01

Modern applications of refractory ceramic thin films, predominantly as wear-protective coatings on cutting tools and on components utilized in automotive engines, require a combination of excellent mechanical properties, thermal stability, and oxidation resistance. Conventional design approaches for transition metal nitride coatings with improved thermal and chemical stability are based on alloying with Al. It is well known that the solubility of Al in NaCl-structure transition metal nitrides is limited. Hence, the great challenge is to increase the Al concentration substantially while avoiding precipitation of the thermodynamically favored wurtzite-AlN phase, which is detrimental to mechanical properties. Here, we use VAlN as a model system to illustrate a new concept for the synthesis of metastable single-phase NaCl-structure thin films with the Al content far beyond solubility limits obtained with conventional plasma processes. This supersaturation is achieved by separating the film-forming species in time and energy domains through synchronization of the 70-μs-long pulsed substrate bias with intense periodic fluxes of energetic Al+ metal ions during reactive hybrid high power impulse magnetron sputtering of the Al target and direct current magnetron sputtering of the V target in the Ar/N2 gas mixture. Hereby, Al is subplanted into the cubic VN grains formed by the continuous flux of low-energy V neutrals. We show that Al subplantation enables an unprecedented 42% increase in metastable Al solubility limit in V1-xAlxN, from x = 0.52 obtained with the conventional method to 0.75. The elastic modulus is 325 ± 5 GPa, in excellent agreement with density functional theory calculations, and approximately 50% higher than for corresponding films grown by dc magnetron sputtering. The extension of the presented strategy to other Al-ion-assisted vapor deposition methods or materials systems is straightforward, which opens up the way for producing supersaturated single

Optical models for radio-frequency-magnetron reactively sputtered AlN films

NASA Astrophysics Data System (ADS)

Easwarakhanthan, T.; Assouar, M. B.; Pigeat, P.; Alnot, P.

2005-10-01

The optical properties of aluminum nitrate (AlN) films reactively sputtered on Si substrates using radio-frequency (rf) magnetron have been studied in this work from multiwavelength spectroscopic ellipsometry (SE) measurements performed over the 290-615 nm wavelength range. The SE modeling carried out with care to adhere as much to the ellipsometric fitting qualities is also backed up with atomic force microscopy and x-ray-diffraction measurements taken on these films thus grown to nominal thicknesses from 40 to 150 nm under the same optimized experimental conditions. It follows that the model describing the optical properties of the thicker AlN films should consist at least in three layers on the Si substrate: an almost roughnessless smooth surface overlayer that is presumed essentially of Al2O3, a bulk AlN layer, and an AlN interface layer that has a refractive index dispersion falling in the range from 2.04 [312 nm] to 1.91 [615 nm] on the average and is fairly distinguishable from the slightly higher bulk layer index which drops correspondingly from 2.12 to 1.99. These index values imply that, beneath the partly or mostly oxidized surface AlN layer, the films comprise a polycrystalline-structured bulk AlN layer above a less-microstructurally-ordered interface layer that extends over 40-55 nm from the substrate among thicker films. This ellipsometric evidence indicating the existence of the interface layer is consistent with those interface layers confirmed through electron microscopy in some previous works. However, the ellipsometrically insufficient thinner AlN films may be only modeled with the surface layer and an AlN layer. The film surface oxide layer thickness varies between 5 and 15 nm among samples. The refractive index dispersions, the layer thicknesses, and the lateral thickness variation of the films are given and discussed regarding the optical constitution of these films and the ellipsometric validity of these parameters.

Growth of C60 thin films on Al2O3/NiAl(100) at early stages

NASA Astrophysics Data System (ADS)

Hsu, S.-C.; Liao, C.-H.; Hung, T.-C.; Wu, Y.-C.; Lai, Y.-L.; Hsu, Y.-J.; Luo, M.-F.

2018-03-01

The growth of thin films of C60 on Al2O3/NiAl(100) at the earliest stage was studied with scanning tunneling microscopy and synchrotron-based photoelectron spectroscopy under ultrahigh-vacuum conditions. C60 molecules, deposited from the vapor onto an ordered thin film of Al2O3/NiAl(100) at 300 K, nucleated into nanoscale rectangular islands, with their longer sides parallel to direction either [010] or [001] of NiAl. The particular island shape resulted because C60 diffused rapidly, and adsorbed and nucleated preferentially on the protrusion stripes of the crystalline Al2O3 surface. The monolayer C60 film exhibited linear protrusions of height 1-3 Å, due to either the structure of the underlying Al2O3 or the lattice mismatch at the boundaries of the coalescing C60 islands; such protrusions governed also the growth of the second layer. The second layer of the C60 film grew only for a C60 coverage >0.60 ML, implying a layer-by-layer growth mode, and also ripened in rectangular shapes. The thin film of C60 was thermally stable up to 400 K; above 500 K, the C60 islands dissociated and most C60 desorbed.

Berkovich Nanoindentation on AlN Thin Films

PubMed Central

2010-01-01

Berkovich nanoindentation-induced mechanical deformation mechanisms of AlN thin films have been investigated by using atomic force microscopy (AFM) and cross-sectional transmission electron microscopy (XTEM) techniques. AlN thin films are deposited on the metal-organic chemical-vapor deposition (MOCVD) derived Si-doped (2 × 1017 cm−3) GaN template by using the helicon sputtering system. The XTEM samples were prepared by means of focused ion beam (FIB) milling to accurately position the cross-section of the nanoindented area. The hardness and Young’s modulus of AlN thin films were measured by a Berkovich nanoindenter operated with the continuous contact stiffness measurements (CSM) option. The obtained values of the hardness and Young’s modulus are 22 and 332 GPa, respectively. The XTEM images taken in the vicinity regions just underneath the indenter tip revealed that the multiple “pop-ins” observed in the load–displacement curve during loading are due primarily to the activities of dislocation nucleation and propagation. The absence of discontinuities in the unloading segments of load–displacement curve suggests that no pressure-induced phase transition was involved. Results obtained in this study may also have technological implications for estimating possible mechanical damages induced by the fabrication processes of making the AlN-based devices. PMID:20672096

Berkovich Nanoindentation on AlN Thin Films.

PubMed

Jian, Sheng-Rui; Chen, Guo-Ju; Lin, Ting-Chun

2010-03-31

Berkovich nanoindentation-induced mechanical deformation mechanisms of AlN thin films have been investigated by using atomic force microscopy (AFM) and cross-sectional transmission electron microscopy (XTEM) techniques. AlN thin films are deposited on the metal-organic chemical-vapor deposition (MOCVD) derived Si-doped (2 × 1017 cm-3) GaN template by using the helicon sputtering system. The XTEM samples were prepared by means of focused ion beam (FIB) milling to accurately position the cross-section of the nanoindented area. The hardness and Young's modulus of AlN thin films were measured by a Berkovich nanoindenter operated with the continuous contact stiffness measurements (CSM) option. The obtained values of the hardness and Young's modulus are 22 and 332 GPa, respectively. The XTEM images taken in the vicinity regions just underneath the indenter tip revealed that the multiple "pop-ins" observed in the load-displacement curve during loading are due primarily to the activities of dislocation nucleation and propagation. The absence of discontinuities in the unloading segments of load-displacement curve suggests that no pressure-induced phase transition was involved. Results obtained in this study may also have technological implications for estimating possible mechanical damages induced by the fabrication processes of making the AlN-based devices.

Influence of Content of Al2O3 on Structure and Properties of Nanocomposite Nb-B-Al-O films

NASA Astrophysics Data System (ADS)

Liu, Na; Dong, Lei; Dong, Lei; Yu, Jiangang; Pan, Yupeng; Wan, Rongxin; Gu, Hanqing; Li, Dejun

2015-11-01

Nb-B-Al-O nanocomposite films with different power of Al2O3 were successfully deposited on the Si substrate via multi-target magnetron co-sputtering method. The influences of Al2O3's content on structure and properties of obtained nanocomposite films through controlling Al2O3's power were investigated. Increasing the power of Al2O3 can influence the bombarding energy and cause the momentum transfer of NbB2. This can lead to the decreasing content of Al2O3. Furthermore, the whole films showed monocrystalline NbB2's (100) phase, and Al2O3 shaded from amorphous to weak cubic-crystalline when decreasing content of Al2O3. This structure and content changes were proof by X-ray diffraction (XRD) and high-resolution transmission electron microscopy (TEM) and X-ray photoelectron spectroscopy (XPS). When NbB2 grains were far from each other in lower power of Al2O3, the whole films showed a typical nanocomposite microstructure with crystalline NbB2 grains embedded in a matrix of an amorphous Al2O3 phase. Continuing increasing the power of Al2O3, the less content of Al2O3 tended to cause crystalline of cubic-Al2O3 between the close distances of different crystalline NbB2 grains. The appearance of cubic-crystallization Al2O3 can help to raise the nanocomposite films' mechanical properties to some extent. The maximum hardness and elastic modulus were up to 21.60 and 332.78 GPa, which were higher than the NbB2 and amorphous Al2O3 monolithic films. Furthermore, this structure change made the chemistry bond of O atom change from the existence of O-Nb, O-B, and O-Al bonds to single O-Al bond and increased the specific value of Al and O. It also influenced the hardness in higher temperature, which made the hardness variation of different Al2O3 content reduced. These results revealed that it can enhance the films' oxidation resistance properties and keep the mechanical properties at high temperature. The study highlighted the importance of controlling the Al2O3's content to prepare

Transparent Al+3 doped MgO thin films for functional applications

NASA Astrophysics Data System (ADS)

Maiti, Payel; Sekhar Das, Pradip; Bhattacharya, Manjima; Mukherjee, Smita; Saha, Biswajit; Mullick, Awadesh Kumar; Mukhopadhyay, Anoop Kumar

2017-08-01

The present work reports the utilization of a relatively simple, cost effective sol-gel technique based route to synthesize highly transparent, spin coated 4.1 at% Al+3 doped MgO thin films on quartz substrates. The films were characterized by XRD, XPS, Raman spectroscopy, and SIMS techniques. The microstructures were characterized by FESEM and TEM while the nanomechanical properties were assessed by the nanoindentation technique. Finally the optical transmittance was measured by UV-vis technique. The x-ray diffraction (XRD) study suggests the crystal facet (2 0 0) of MgO lattice to be distorted after incorporation of Al+3 into MgO lattice. From FESEM the doped films were found to have a dense microstructure with a crystallite size of about 20 nm as revealed by the TEM studies. Nanoindentation measurements indicated drastic increase of elastic modulus for the Al+3 doped MgO thin films by ~73% compared to that of the pristine MgO thin films along with retaining the nanohardness at ~8 GPa. The transmittance of Al+3 doped MgO thin films in the visible range was significantly higher (~99%) than that of pristine MgO (~90%) thin films. The films also had a relatively higher refractive index of about 1.45 as evaluated from the optical properties. The enhanced transmittance as well as the improved elastic modulus of Al+3 doped MgO thin films suggest its promising candidature in magnetic memory devices and as buffer layers of solar cells.

Mechanical properties and microstructures of Al-Cu Thin films with various heat treatments

NASA Astrophysics Data System (ADS)

Joo, Young-Chang

1998-10-01

The relationship between microstructure and mechanical properties has been investigated in Al-Cu thin films. The Cu content in Al-Cu samples used in this study ranges from 0 to 2 wt.% and substrate curvature measurement was used to measure film stress. In thin films, the constraints on the film by the substrate influence the microstructure and mechanical properties. Al-Cu thin films cooled from high temperatures have a large density of dislocations due to the plastic deformation caused by the thermal mismatch between the film and substrate. The high density of dislocations in the thin film enables precipitates to form inside the grain even during a very rapid quenching. The presence of a large density of dislocations and precipitates will in turn cause precipitation hardening of the Al-Cu films. The precipitation hardening is dominant at lower temperatures, and solid solution hardening is observed at higher temperatures in the tensile regime. Pure Al films showed the same values of tensile and compressive yield stresses at a given temperature during stress-temperature cycling.

Thermally Diffused Al:ZnO Thin Films for Broadband Transparent Conductor.

PubMed

Tong, Chong; Yun, Juhyung; Chen, Yen-Jen; Ji, Dengxin; Gan, Qiaoqiang; Anderson, Wayne A

2016-02-17

Here, we report an approach to realize highly transparent low resistance Al-doped ZnO (AZO) films for broadband transparent conductors. Thin Al films are deposited on ZnO surfaces, followed by thermal diffusion processes, introducing the Al doping into ZnO thin films. By utilizing the interdiffusion of Al, Zn, and O, the chemical state of Al on the surfaces can be converted to a fully oxidized state, resulting in a low sheet resistance of 6.2 Ω/sq and an excellent transparency (i.e., 96.5% at 550 nm and higher than 85% up to 2500 nm), which is superior compared with some previously reported values for indium tin oxide, solution processed AZO, and many transparent conducting materials using novel nanostructures. Such AZO films are also applied as transparent conducting layers for AZO/Si heterojunction solar cells, demonstrating their applications in optoelectronic devices.

Properties of planar structures based on Policluster films of diamond and AlN

NASA Astrophysics Data System (ADS)

Belyanin, A. F.; Luchnikov, A. P.; Nalimov, S. A.; Bagdasarian, A. S.

2018-01-01

AlN films doped with zinc were grown on Si substrates by RF magnetron reactive sputtering of a compound target. Policluster films of diamond doped with boron were formed on layered Si/AlN substrates from the gas phase hydrogen and methane, activated arc discharge. By electron microscopy, X-ray diffraction and Raman spectroscopy the composition and structure of synthetic policluster films of diamond and AlN films were studied. Photovoltaic devices based on the AlN/PFD layered structure are presented.

Characterization of Al2O3 optically stimulated luminescence films for 2D dosimetry using a 6 MV photon beam

NASA Astrophysics Data System (ADS)

Ahmed, M. F.; Shrestha, N.; Schnell, E.; Ahmad, S.; Akselrod, M. S.; Yukihara, E. G.

2016-11-01

This work evaluates the dosimetric properties of newly developed optically stimulated luminescence (OSL) films, fabricated with either Al2O3:C or Al2O3:C,Mg, using a prototype laser scanning reader, a developed image reconstruction algorithm, and a 6 MV therapeutic photon beam. Packages containing OSL films (Al2O3:C and Al2O3:C,Mg) and a radiochromic film (Gafchromic EBT3) were irradiated using a 6 MV photon beam using different doses, field sizes, with and without wedge filter. Dependence on film orientation of the OSL system was also tested. Diode-array (MapCHECK) and ionization chamber measurements were performed for comparison. The OSLD film doses agreed with the MapCHECK and ionization chamber data within the experimental uncertainties (<2% at 1.5 Gy). The system background and minimum detectable dose (MDD) were  <0.5 mGy, and the dose response was approximately linear from the MDD up to a few grays (the linearity correction was  <10% up to ~2-4 Gy), with no saturation up to 30 Gy. The dose profiles agreed with those obtained using EBT3 films (analyzed using the triple channel method) in the high dose regions of the images. In the low dose regions, the dose profiles from the OSLD films were more reproducible than those from the EBT3 films. We also demonstrated that the OSL film data are independent on scan orientation and field size over the investigated range. The results demonstrate the potential of OSLD films for 2D dosimetry, particularly for the characterization of small fields, due to their wide dynamic range, linear response, resolution and dosimetric properties. The negligible background and potential simple calibration make these OSLD films suitable for remote audits. The characterization presented here may motivate further commercial development of a 2D dosimetry system based on the OSL from Al2O3:C or Al2O3:C,Mg.

Preparation and characterization of α-Al2O3 film by low temperature thermal oxidation of Al8Cr5 coating

NASA Astrophysics Data System (ADS)

Zhang, Min; Xu, Bajin; Ling, Guoping

2015-03-01

In this paper, α-Al2O3 film was prepared by low temperature thermal oxidation of Al8Cr5 coating. The Al8Cr5 alloy coating was prepared on SUS430 stainless steel through a two-step approach including electrodepositing Cr/Al composite coating and subsequent heat treatment at 740 °C for 16 h. After mechanical polishing removal of voids on the surface, the Al8Cr5 coating was thermal oxidized at 720 °C in argon for 100 h. The samples were characterized by SEM, EDX, XRD, XPS and TEM. XPS detection on the surface of oxidized Al8Cr5 coating showed that the oxide film mainly consisted of Al2O3. TEM characterization of the oxide film showed that it was α-Al2O3 films ca. 110 nm. The formation of α-Al2O3 films at low temperature can be attributed to the formation of Cr2O3 nuclei at the initial stage of oxidation which lowers the nucleation energy barrier of α-Al2O3.

Properties of NiZnO Thin Films with Different Amounts of Al Doping

NASA Astrophysics Data System (ADS)

Kayani, Zohra N.; Fatima, Gulnaz; Zulfiqar, Bareera; Riaz, Saira; Naseem, Shahzad

2017-10-01

Transparent Al-doped NiZnO thin films have been fabricated by sol-gel dip coating and investigated using scanning electron microscopy, x-ray diffraction analysis, ultraviolet-visible-near infrared (UV-Vis-NIR) spectrophotometry, vibrating-sample magnetometry, and Fourier-transform infrared spectroscopy. The Al-doped NiZnO films consisted of ZnO hexagonal and α-Al2O3 rhombohedral phases as the Al incorporation was gradually increased from 1 at.% up to 3 at.%. A decrease in the optical bandgap from 3.90 eV to 3.09 eV was observed for films grown with Al content of 1 at.% to 2.5 at.%, but at 3 at.% Al, the bandgap increased to 3.87 eV. Optical transmittance of 96% was achieved for these transparent oxide films. Study of their magnetic properties revealed that increasing Al percentage resulted in enhanced ferromagnetism. The saturated magnetization increased with increasing Al percentage. The ferromagnetic properties of Al-doped NiZnO are mediated by electrons. The surface of the deposited thin films consisted of nanowires, nanorods, porous surface, and grains.

Intrinsic stress evolution during amorphous oxide film growth on Al surfaces

DOE Office of Scientific and Technical Information (OSTI.GOV)

Flötotto, D., E-mail: d.floetotto@is.mpg.de; Wang, Z. M.; Jeurgens, L. P. H.

2014-03-03

The intrinsic stress evolution during formation of ultrathin amorphous oxide films on Al(111) and Al(100) surfaces by thermal oxidation at room temperature was investigated in real-time by in-situ substrate curvature measurements and detailed atomic-scale microstructural analyses. During thickening of the oxide a considerable amount of growth stresses is generated in, remarkably even amorphous, ultrathin Al{sub 2}O{sub 3} films. The surface orientation-dependent stress evolutions during O adsorption on the bare Al surfaces and during subsequent oxide-film growth can be interpreted as a result of (i) adsorption-induced surface stress changes and (ii) competing processes of free volume generation and structural relaxation, respectively.

Carrier Compensation Induced by Thermal Annealing in Al-Doped ZnO Films

PubMed Central

Koida, Takashi; Kaneko, Tetsuya; Shibata, Hajime

2017-01-01

This study investigated carrier compensation induced by thermal annealing in sputtered ZnO:Al (Al2O3: 0.25, 0.5, 1.0, and 2.0 wt %) films. The films were post-annealed in a N2 atmosphere at low (1 × 10−23 atm) and high (1 × 10−4 atm) oxygen partial pressures (PO2). In ZnO:Al films with low Al contents (i.e., 0.25 wt %), the carrier density (n) began to decrease at annealing temperatures (Ta) of 600 °C at low PO2. At higher PO2 and/or Al contents, n values began to decrease significantly at lower Ta (ca. 400 °C). In addition, Zn became desorbed from the films during heating in a high vacuum (i.e., <1 × 10−7 Pa). These results suggest the following: (i) Zn interstitials and Zn vacancies are created in the ZnO lattice during post-annealing treatments, thereby leading to carrier compensation by acceptor-type Zn vacancies; (ii) The compensation behavior is significantly enhanced for ZnO:Al films with high Al contents. PMID:28772501

Influence of Al/CuO reactive multilayer films additives on exploding foil initiator

DOE Office of Scientific and Technical Information (OSTI.GOV)

Zhou Xiang; Shen Ruiqi; Ye Yinghua

2011-11-01

An investigation on the influence of Al/CuO reactive multilayer films (RMFs) additives on exploding foil initiator was performed in this paper. Cu film and Cu/Al/CuO RMFs were produced by using standard microsystem technology and RF magnetron sputtering technology, respectively. Scanning electron microscopy characterization revealed the distinct layer structure of the as-deposited Al/CuO RMFs. Differential scanning calorimetry was employed to ascertain the amount of heat released in the thermite reaction between Al films and CuO films, which was found to be 2024 J/g. Electrical explosion tests showed that 600 V was the most matching voltage for our set of apparatus. Themore » explosion process of two types of films was observed by high speed camera and revealed that compared with Cu film, an extra distinct combustion phenomenon was detected with large numbers of product particles fiercely ejected to a distance of about six millimeters for Cu/Al/CuO RMFs. By using the atomic emission spectroscopy double line technique, the reaction temperature was determined to be about 6000-7000 K and 8000-9000 K for Cu film and Cu/Al/CuO RMFs, respectively. The piezoelectricity of polyvinylidene fluoride film was employed to measure the average velocity of the slapper accelerated by the explosion of the films. The average velocities of the slappers were calculated to be 381 m/s and 326 m/s for Cu film and Cu/Al/CuO RMFs, respectively, and some probable reasons were discussed with a few suggestions put forward for further work.« less

Influence of Al/CuO reactive multilayer films additives on exploding foil initiator

NASA Astrophysics Data System (ADS)

Zhou, Xiang; Shen, Ruiqi; Ye, Yinghua; Zhu, Peng; Hu, Yan; Wu, Lizhi

2011-11-01

An investigation on the influence of Al/CuO reactive multilayer films (RMFs) additives on exploding foil initiator was performed in this paper. Cu film and Cu/Al/CuO RMFs were produced by using standard microsystem technology and RF magnetron sputtering technology, respectively. Scanning electron microscopy characterization revealed the distinct layer structure of the as-deposited Al/CuO RMFs. Differential scanning calorimetry was employed to ascertain the amount of heat released in the thermite reaction between Al films and CuO films, which was found to be 2024 J/g. Electrical explosion tests showed that 600 V was the most matching voltage for our set of apparatus. The explosion process of two types of films was observed by high speed camera and revealed that compared with Cu film, an extra distinct combustion phenomenon was detected with large numbers of product particles fiercely ejected to a distance of about six millimeters for Cu/Al/CuO RMFs. By using the atomic emission spectroscopy double line technique, the reaction temperature was determined to be about 6000-7000 K and 8000-9000 K for Cu film and Cu/Al/CuO RMFs, respectively. The piezoelectricity of polyvinylidene fluoride film was employed to measure the average velocity of the slapper accelerated by the explosion of the films. The average velocities of the slappers were calculated to be 381 m/s and 326 m/s for Cu film and Cu/Al/CuO RMFs, respectively, and some probable reasons were discussed with a few suggestions put forward for further work.

Growth evolution of AlN films on silicon (111) substrates by pulsed laser deposition

DOE Office of Scientific and Technical Information (OSTI.GOV)

Wang, Haiyan; Wang, Wenliang; Yang, Weijia

2015-05-14

AlN films with various thicknesses have been grown on Si(111) substrates by pulsed laser deposition (PLD). The surface morphology and structural property of the as-grown AlN films have been investigated carefully to comprehensively explore the epitaxial behavior. The ∼2 nm-thick AlN film initially grown on Si substrate exhibits an atomically flat surface with a root-mean-square surface roughness of 0.23 nm. As the thickness increases, AlN grains gradually grow larger, causing a relatively rough surface. The surface morphology of ∼120 nm-thick AlN film indicates that AlN islands coalesce together and eventually form AlN layers. The decreasing growth rate from 240 to 180 nm/h is amore » direct evidence that the growth mode of AlN films grown on Si substrates by PLD changes from the islands growth to the layer growth. The evolution of AlN films throughout the growth is studied deeply, and its corresponding growth mechanism is hence proposed. These results are instructional for the growth of high-quality nitride films on Si substrates by PLD, and of great interest for the fabrication of AlN-based devices.« less

Control of Defects in Aluminum Gallium Nitride ((Al)GaN) Films on Grown Aluminum Nitride (AlN) Substrates

DTIC Science & Technology

2013-02-01

Nord, J.; Albe, K.; Erhart, P.; Nordlund, K. Modelling of Compound Semiconductors: Analytical Bond-order Potential for Gallium , Nitrogen and Gallium ...Control of Defects in Aluminum Gallium Nitride ((Al)GaN) Films on Grown Aluminum Nitride (AlN) Substrates by Iskander G. Batyrev, Chi-Chin Wu...Aluminum Gallium Nitride ((Al)GaN) Films on Grown Aluminum Nitride (AlN) Substrates Iskander G. Batyrev and N. Scott Weingarten Weapons and

Preparation of γ-Al2O3 films by laser chemical vapor deposition

NASA Astrophysics Data System (ADS)

Gao, Ming; Ito, Akihiko; Goto, Takashi

2015-06-01

γ- and α-Al2O3 films were prepared by chemical vapor deposition using CO2, Nd:YAG, and InGaAs lasers to investigate the effects of varying the laser wavelength and deposition conditions on the phase composition and microstructure. The CO2 laser was found to mostly produce α-Al2O3 films, whereas the Nd:YAG and InGaAs lasers produced γ-Al2O3 films when used at a high total pressure. γ-Al2O3 films had a cauliflower-like structure, while the α-Al2O3 films had a dense and columnar structure. Of the three lasers, it was the Nd:YAG laser that interacted most with intermediate gas species. This promoted γ-Al2O3 nucleation in the gas phase at high total pressure, which explains the cauliflower-like structure of nanoparticles observed.

Al decorated ZnO thin-film photoanode for SPR-enhanced photoelectrochemical water splitting

NASA Astrophysics Data System (ADS)

Li, Hongxia; Li, Xin; Dong, Wei; Xi, Junhua; Wu, Xin

2018-06-01

Photoelectrochemical (PEC) water splitting has been considered to be a promising approach to ease the energy and environmental crisis. Herein, Al decorated ZnO thin films are successfully achieved through a facile dc magnetron-sputtering method followed with Al evaporation for further enhanced PEC performance. The Al/ZnO thin film with 60 s Al evaporating time exhibits the highest photocurrent density under AM1.5G and visible light irradiation, which are more than 5 and 3 times as the pure ZnO film, respectively. Such surface modification by Al not only enlarges the visible light absorption based on surface plasmonic resonance effect, but facilitates the charge separation and transportation at the electrode/electrolyte interface. Finally, a possible mechanism is proposed for the photocatalytic activity enhancement of Al/ZnO thin film photoanode.

Depth-resolved cathodoluminescence of a homoepitaxial AlN thin film

NASA Astrophysics Data System (ADS)

Silveira, E.; Freitas, J. A.; Slack, G. A.; Schowalter, L. J.; Kneissl, M.; Treat, D. W.; Johnson, N. M.

2005-07-01

In the present work we will report on the optical properties of an AlN film homoepitaxially grown on a high-quality large bulk AlN single crystal. The latter was grown by a sublimation-recondensation technique, while the film was grown by organometallic vapor-phase epitaxy. Cathodoluminescence measurements were performed using electron beam energies between 2 and 10 keV in order to excite the sample and so to probe different sample depths, making it possible to differentiate between different features which originate in the AlN homoepitaxial film. The penetration depth has been determined through the calculation of the Bohr-Bethe maximum range of excitation using the approximation to the Everhart-Hoff expression for the energy loss within a solid.

Formation of epitaxial Al 2O 3/NiAl(1 1 0) films: aluminium deposition

NASA Astrophysics Data System (ADS)

Lykhach, Y.; Moroz, V.; Yoshitake, M.

2005-02-01

Structure of epitaxial Al 2O 3 layers formed on NiAl(1 1 0) substrates has been studied by means of reflection high-energy electron diffraction (RHEED). The elucidated structure was compared to the model suggested for 0.5 nm-thick Al 2O 3 layers [K. Müller, H. Lindner, D.M. Zehner, G. Ownby, Verh. Dtsch. Phys. Ges. 25 (1990) 1130; R.M. Jaeger, H. Kuhlenbeck, H.J. Freund, Surf. Sci. 259 (1991) 235]. The stepwise growth of Al 2O 3 film, involving deposition and subsequent oxidation of aluminium onto epitaxial 0.5 nm-thick Al 2O 3 layers, has been investigated. Aluminium was deposited at room temperature, whereas its oxidation took place during annealing at 1070 K. The Al 2O 3 thickness was monitored by means of Auger electron spectroscopy (AES). It was found that Al 2O 3 layer follows the structure of 0.5 nm thick Al 2O 3 film, although a tilting of Al 2O 3(1 1 1) surface plane with respect to NiAl(1 1 0) surface appeared after Al deposition.

Engineering epitaxial γ-Al2O3 gate dielectric films on 4H-SiC

NASA Astrophysics Data System (ADS)

Tanner, Carey M.; Toney, Michael F.; Lu, Jun; Blom, Hans-Olof; Sawkar-Mathur, Monica; Tafesse, Melat A.; Chang, Jane P.

2007-11-01

The formation of epitaxial γ-Al2O3 thin films on 4H-SiC was found to be strongly dependent on the film thickness. An abrupt interface was observed in films up to 200 Å thick with an epitaxial relationship of γ-Al2O3(111)‖4H-SiC(0001) and γ-Al2O3(44¯0)‖4H-SiC(112¯0). The in-plane alignment between the film and the substrate is nearly complete for γ-Al2O3 films up to 115 Å thick, but quickly diminishes in thicker films. The films are found to be slightly strained laterally in tension; the strain increases with thickness and then decreases in films thicker than 200 Å, indicating strain relaxation which is accompanied by increased misorientation. By controlling the structure of ultrathin Al2O3 films, metal-oxide-semiconductor capacitors with Al2O3 gate dielectrics on 4H-SiC were found to have a very low leakage current density, suggesting suitability of Al2O3 for SiC device integration.

Optical and electrical properties of polycrystalline and amorphous Al-Ti thin films

NASA Astrophysics Data System (ADS)

Canulescu, S.; Borca, C. N.; Rechendorff, K.; Davidsdóttir, S.; Pagh Almtoft, K.; Nielsen, L. P.; Schou, J.

2016-04-01

The structural, optical, and transport properties of sputter-deposited Al-Ti thin films have been investigated as a function of Ti alloying with a concentration ranging from 2% to 46%. The optical reflectivity of Al-Ti films at visible and near-infrared wavelengths decreases with increasing Ti content. X-ray absorption fine structure measurements reveal that the atomic ordering around Ti atoms increases with increasing Ti content up to 20% and then decreases as a result of a transition from a polycrystalline to amorphous structure. The transport properties of the Al-Ti films are influenced by electron scattering at the grain boundaries in the case of polycrystalline films and static defects, such as anti-site effects and vacancies in the case of the amorphous alloys. The combination of Ti having a real refractive index (n) comparable with the extinction coefficient (k) and Al with n much smaller than k allows us to explore the parameter space for the free-electron behavior in transition metal-Al alloys. The free electron model, applied for the polycrystalline Al-Ti films with Ti content up to 20%, leads to an optical reflectance at near infrared wavelengths that scales linearly with the square root of the electrical resistivity.

Perpendicular magnetic anisotropy in Mn2CoAl thin film

NASA Astrophysics Data System (ADS)

Sun, N. Y.; Zhang, Y. Q.; Fu, H. R.; Che, W. R.; You, C. Y.; Shan, R.

2016-01-01

Heusler compound Mn2CoAl (MCA) is attracting more attentions due to many novel properties, such as high resistance, semiconducting behavior and suggestion as a spin-gapless material with a low magnetic moment. In this work, Mn2CoAl epitaxial thin film was prepared on MgO(100) substrate by magnetron sputtering. The transport property of the film exhibits a semiconducting-like behavior. Moreover, our research reveals that perpendicular magnetic anisotropy (PMA) can be induced in very thin Mn2CoAl films resulting from Mn-O and Co-O bonding at Mn2CoAl/MgO interface, which coincides with a recent theoretical prediction. PMA and low saturation magnetic moment could lead to large spin-transfer torque with low current density in principle, and thus our work may bring some unanticipated Heusler compounds into spintronics topics such as the domain wall motion and the current-induced magnetization reversal.

C-axis orientated AlN films deposited using deep oscillation magnetron sputtering

NASA Astrophysics Data System (ADS)

Lin, Jianliang; Chistyakov, Roman

2017-02-01

Highly <0001> c-axis orientated aluminum nitride (AlN) films were deposited on silicon (100) substrates by reactive deep oscillation magnetron sputtering (DOMS). No epitaxial favored bond layer and substrate heating were applied for assisting texture growth. The effects of the peak target current density (varied from 0.39 to 0.8 Acm-2) and film thickness (varied from 0.25 to 3.3 μm) on the c-axis orientation, microstructure, residual stress and mechanical properties of the AlN films were investigated by means of X-ray diffraction rocking curve methodology, transmission electron microscopy, optical profilometry, and nanoindentation. All AlN films exhibited a <0001> preferred orientation and compressive residual stresses. At similar film thicknesses, an increase in the peak target current density to 0.53 Acm-2 improved the <0001> orientation. Further increasing the peak target current density to above 0.53 Acm-2 showed limited contribution to the texture development. The study also showed that an increase in the thickness of the AlN films deposited by DOMS improved the c-axis alignment accompanied with a reduction in the residual stress.

Aluminum concentration and substrate temperature in chemical sprayed ZnO:Al thin solid films

NASA Astrophysics Data System (ADS)

Lozada, Erick Velázquez; Castañeda, L.; Aguilar, E. Austria

2018-02-01

The continuous interest in the synthesis and properties study of materials has permitted the development of semiconductor oxides. Zinc oxide (ZnO) with hexagonal wurzite structure is a wide band gap n-type semiconductor and interesting material over a wide range. Chemically sprayed aluminium-doped zinc oxide thin films (ZnO:Al) were deposited on soda-lime glass substrates starting from zinc pentanedionate and aluminium pentanedionate. The influence of both the dopant concentration in the starting solution and the substrate temperature on the composition, morphology, and transport properties of the ZnO:Al thin films were studied. The structure of all the ZnO:Al thin films was polycrystalline, and variation in the preferential growth with the aluminium content in the solution was observed: from an initial (002) growth in films with low Al content, switching to a predominance of (101) planes for heavily dopant regime. The crystallite size was found to decrease with doping concentration and range from 33 to 20 nm. First-order Raman scattering from ZnO:Al, all having the wurtzite structure. The assignments of the E2 mode in ZnO:Al differ from previous investigations. The film composition and the dopant concentration were determined by Auger Electron Spectroscopy (AES); these results showed that the films are almost stoichiometric ZnO. The optimum deposition conditions leading to conductive and transparent ZnO:Al thin films were also found. In this way a resistivity of 0.03 Ω-cm with a (002) preferential growth, were obtained in optimized ZnO:Al thin films.

Mixed Al and Si doping in ferroelectric HfO{sub 2} thin films

DOE Office of Scientific and Technical Information (OSTI.GOV)

Lomenzo, Patrick D.; Nishida, Toshikazu, E-mail: nishida@ufl.edu; Takmeel, Qanit

2015-12-14

Ferroelectric HfO{sub 2} thin films 10 nm thick are simultaneously doped with Al and Si. The arrangement of the Al and Si dopant layers within the HfO{sub 2} greatly influences the resulting ferroelectric properties of the polycrystalline thin films. Optimizing the order of the Si and Al dopant layers led to a remanent polarization of ∼20 μC/cm{sup 2} and a coercive field strength of ∼1.2 MV/cm. Post-metallization anneal temperatures from 700 °C to 900 °C were used to crystallize the Al and Si doped HfO{sub 2} thin films. Grazing incidence x-ray diffraction detected differences in peak broadening between the mixed Al and Si doped HfO{submore » 2} thin films, indicating that strain may influence the formation of the ferroelectric phase with variations in the dopant layering. Endurance characteristics show that the mixed Al and Si doped HfO{sub 2} thin films exhibit a remanent polarization greater than 15 μC/cm{sup 2} up to 10{sup 8} cycles.« less

Structural and morphological study on ZnO:Al thin films grown using DC magnetron sputtering

NASA Astrophysics Data System (ADS)

Astuti, B.; Sugianto; Mahmudah, S. N.; Zannah, R.; Putra, N. M. D.; Marwoto, P.; Aryanto, D.; Wibowo, E.

2018-03-01

ZnO doped Al (ZnO:Al ) thin film was deposited on corning glass substrate using DC magnetron sputtering method. Depositon process of the ZnO:Al thin films was kept constant at plasma power, deposition temperature and deposition time are 40 watt, 400°C and 2 hours, respectivelly. Furthermore, for annealing process has been done on the variation of oxygen pressure are 0, 50, and 100 mTorr. X-ray diffraction (XRD), and SEM was used to characterize ZnO:Al thin film was obtained. Based on XRD characterization results of the ZnO:Al thin film shows that deposited thin film has a hexagonal structure with the dominant diffraction peak at according to the orientation of the (002) plane and (101). Finally, the crystal structure of the ZnO:Al thin films that improves with an increasing the oxygen pressure at annealing process up to 100 mTorr and its revealed by narrow FWHM value and also with dense crystal structure.

Development and demonstration of 2D dosimetry using optically stimulated luminescence from new Al2O3 films for radiotherapy applications

NASA Astrophysics Data System (ADS)

Ahmed, Md Foiez

Scope and Method of Study: The goal of this work was to develop and demonstrate a 2D dosimetry system based on the optically stimulated luminescence (OSL) from new Al2O3 films for radiotherapy applications. A 2D laser-scanning system was developed for the readout and two OSL films (Al2O3:C and Al2O3:C,Mg) were tested. A dose reconstruction algorithm addressing corrections required for the characteristic material properties and the properties related to the system design was developed. The dosimetric properties of the system were tested using clinical X-ray (6 MV) beam. The feasibility of small field dosimetry was tested using heavy ion beams (221 MeV proton and 430 MeV 12C beam). For comparison, clinical tests were performed with ionization chamber, diode arrays and the commercial radiochromic films (Gafchromic EBT3) when applicable. Findings and Conclusions: The results demonstrate that the developed image reconstruction algorithm enabled > 300x faster laser-scanning readout of the Al2O3 films, eliminating the restriction imposed by its slow luminescence decay. The algorithm facilitates submillimeter spatial resolution, reduces the scanner position dependence (of light collection efficiency) and removes the inherent galvo geometric distortion, among other corrections. The system has a background signal < 1 mGy, linearity correction factor of < 10% up to ˜4.0 Gy and < 2% dose uncertainty over the clinically relevant dose range of 0.1 - 30 Gy. The system has a dynamic range of 4 - 5 orders, only limited by PMT linearity. The absolute response from Al2O2:C films is higher than Al2O 2:C,Mg films, but with lower image signal-to-noise ratio due to lower concentration of fast F+-center emission. As a result, Al2O2:C,Mg films are better suited than Al2O3:C films for small field dosimetry, which requires precise dosimetry with sub-millimeter spatial resolution. The dose uncertainty associated with OSL film dosimetry is lower than that associated with EBT3 film dosimetry

Structural and mechanical properties of CVD deposited titanium aluminium nitride (TiAlN) thin films

NASA Astrophysics Data System (ADS)

Das, Soham; Guha, Spandan; Ghadai, Ranjan; Kumar, Dhruva; Swain, Bibhu P.

2017-06-01

Titanium aluminium nitride (TiAlN) thin films were deposited by chemical vapour deposition using TiO2 powder, Al powder and N2 gas. The morphology and mechanical properties of the films were characterized by scanning electron microscopy and nanoindentation technique, respectively. The structural properties were characterized by Raman spectroscopy and X-ray diffraction. The XRD result shows TiAlN films are of NaCl-type metal nitride structure. Micro-Raman peaks of the TiAlN thin film were observed within 450 and 642 cm-1 for acoustic and optic range, respectively. A maximum hardness and Young modulus up to 22 and 272.15 GPa, respectively, were observed in the TiAlN film deposited at 1200 °C.

Thermally stable and high reflectivity Al-doped silver thin films deposited by magnetron sputtering

NASA Astrophysics Data System (ADS)

Loka, Chadrasekhar; Lee, Kwang; Joo, Sin Yong; Lee, Kee-Sun

2018-03-01

Thermally stable, high reflectance thin film coatings are indispensable in optoelectronic devices, especially as a potential back reflector for LEDs and solar cells. The silver has the drawback of agglomerating easily and poor thermal stability, which is limiting its application as a highly reflective coating in various optoelectronic applications. In this study, improved thermal stability by modification of the Ag film into an Ag/Al-doped Ag structure has been confirmed. In this paper, the surface morphology, optical reflectance, and thermal stability of the Ag/Al-doped Ag are investigated. The Ag/Al-doped Ag/sapphire films showed excellent thermal stability after annealing the films at 523 K with the highest reflectance about ∼86% as compared to the pure Ag films. The grain growth analysis results revealed that the Al-doping is effective to restrain the severe grain growth of silver films. The Auger electron spectroscopy results revealed that the outer diffusion of aluminum and the formation of Al-O bond at the outermost silver layer which is beneficial to retard the Ag grain growth.

Fe-Al alloy single-crystal thin film preparation for basic magnetic measurements

NASA Astrophysics Data System (ADS)

Abe, Tatsuya; Kawai, Tetsuroh; Futamoto, Masaaki; Ohtake, Mitsuru; Inaba, Nobuyuki

2018-04-01

Fe100-xAlx (x = 0, 4, 10, 20, 30 at. %) alloy films of 40 nm thickness are prepared on MgO(001) single-crystal substrates by varying substrate temperature from room temperature to 600 °C. Single-crystal films of (001) orientation with bcc-based disordered A2 structure are obtained for the Al content range of x = 0 - 20 at. %. An ordered phase of DO3 structure is observed in Fe70Al30 films prepared at temperatures higher than 200 °C, whereas (001) oriented single-crystal films of A2 structure are obtained when prepared at room temperature. The film surface profile does not depend much on the film composition, while the surface roughness increases with increasing substrate temperature. Island-like crystals are observed for films prepared at 600°C for all compositions. Difference in lattice spacing measured parallel and perpendicular to the substrate is noted for the single-crystal thin films and it increases with increasing Al content. The lattice strain in single-crystal film is caused possibly to accommodate the lattice mismatch with the MgO substrate. The (001)-oriented single-crystal films with A2 structure show four-fold symmetries in in-plane magnetic anisotropy with the easy magnetization axis A2[100] and the hard magnetization axis A2[110], whereas the films with DO3 ordered structure show almost isotropic magnetic properties.

Mechanical and physicochemical properties of AlN thin films obtained by pulsed laser deposition

NASA Astrophysics Data System (ADS)

Cibert, C.; Tétard, F.; Djemia, P.; Champeaux, C.; Catherinot, A.; Tétard, D.

2004-10-01

AlN thin films have been deposited on Si(100) substrates by a pulsed laser deposition method. The deposition parameters (pressure, temperature, purity of target) play an important role in the mechanical and physicochemical properties. The films have been characterized using X-ray diffraction, atomic force microscopy, Brillouin light scattering, Fourier transform infrared spectroscopy and wettability testing. With a high purity target of AlN and a temperature deposition of 750 ∘C, the measured Rayleigh wave velocity is close to the one previously determined for AlN films grown at high temperature by metal-organic chemical vapour deposition. Growth of nanocrystalline AlN at low temperature and of AlN film with good crystallinity for samples deposited at higher temperature is confirmed by infrared spectroscopy, as it was by atomic force microscopy, in agreement with X-ray diffraction results. A high hydrophobicity has been measured with zero polar contribution for the surface energy. These results confirm that films made by pulsed laser deposition of pure AlN at relatively low temperature have good prospects for microelectromechanical systems applications.

Effect of film thickness on structural and mechanical properties of AlCrN nanocompoite thin films deposited by reactive DC magnetron sputtering

DOE Office of Scientific and Technical Information (OSTI.GOV)

Prakash, Ravi; Kaur, Davinder, E-mail: dkaurfph@iitr.ac.in

2016-05-06

In this study, the influence of film thickness on the structural, surface morphology and mechanical properties of Aluminum chromium nitride (AlCrN) thin films has been successfully investigated. The AlCrN thin films were deposited on silicon (100) substrate using dc magnetron reactive co-sputtering at substrate temperature 400° C. The structural, surface morphology and mechanical properties were studied using X-ray diffraction, field-emission scanning electron microscopy and nanoindentation techniques respectively. The thickness of these thin films was controlled by varying the deposition time therefore increase in deposition time led to increase in film thickness. X-ray diffraction pattern of AlCrN thin films with differentmore » deposition time shows the presence of (100) and (200) orientations. The crystallite size varies in the range from 12.5 nm to 36.3 nm with the film thickness due to surface energy minimization with the higher film thickness. The hardness pattern of these AlCrN thin films follows Hall-Petch relation. The highest hardness 23.08 Gpa and young modulus 215.31 Gpa were achieved at lowest grain size of 12.5 nm.« less

Characterization of nanocrystalline ZnO:Al films by sol-gel spin coating method

DOE Office of Scientific and Technical Information (OSTI.GOV)

Gareso, P. L., E-mail: pgareso@gmail.com; Rauf, N., E-mail: pgareso@gmail.com; Juarlin, E., E-mail: pgareso@gmail.com

2014-09-25

Nanocrystalline ZnO films doped with aluminium by sol-gel spin coating method have been investigated using optical transmittance UV-Vis and X-ray diffraction (X-RD) measurements. ZnO films were prepared using zinc acetate dehydrate (Zn(CH{sub 3}COO){sub 2}@@‡2H{sub 2}O), ethanol, and diethanolamine (DEA) as a starting material, solvent, and stabilizer, respectively. For doped films, AlCl{sub 3} was added to the mixture. The ZnO:Al films were deposited on a transparent conductive oxide (TCO) substrate using spin coating technique at room temperature with a rate of 3000 rpm in 30 sec. The deposited films were annealed at various temperatures from 400°C to 600°C during 60 minutes.more » The transmittance UV-Vis measurement results showed that after annealing at 400°C, the energy band gap profile of nanocrystalline ZnO:Al film was a blue shift. This indicated that the band gap of ZnO:Al increased after annealing due to the increase of crystalline size. As the annealing temperature increased the bandgap energy was a constant. In addition to this, there was a small oscillation occurring after annealing compared to the as–grown samples. In the case of X-RD measurements, the crystalinity of the films were amorphous before annealing, and after annealing the crystalinity became enhance. Also, X-RD results showed that structure of nanocrystalline ZnO:Al films were hexagonal polycrystalline with lattice parameters are a = 3.290 Å and c = 5.2531 Å.« less

Perpendicular magnetic anisotropy in Mn{sub 2}CoAl thin film

DOE Office of Scientific and Technical Information (OSTI.GOV)

Sun, N. Y.; Zhang, Y. Q.; Che, W. R.

Heusler compound Mn{sub 2}CoAl (MCA) is attracting more attentions due to many novel properties, such as high resistance, semiconducting behavior and suggestion as a spin-gapless material with a low magnetic moment. In this work, Mn{sub 2}CoAl epitaxial thin film was prepared on MgO(100) substrate by magnetron sputtering. The transport property of the film exhibits a semiconducting-like behavior. Moreover, our research reveals that perpendicular magnetic anisotropy (PMA) can be induced in very thin Mn{sub 2}CoAl films resulting from Mn-O and Co-O bonding at Mn{sub 2}CoAl/MgO interface, which coincides with a recent theoretical prediction. PMA and low saturation magnetic moment could leadmore » to large spin-transfer torque with low current density in principle, and thus our work may bring some unanticipated Heusler compounds into spintronics topics such as the domain wall motion and the current-induced magnetization reversal.« less

Grain Growth in Nanocrystalline Mg-Al Thin Films

DOE PAGES

Kruska, Karen; Rohatgi, Aashish; Vemuri, Rama S.; ...

2017-10-05

We report that an improved understanding of grain growth kinetics in nanocrystalline materials, and in metals and alloys in general, is of continuing interest to the scientific community. In this study, Mg-Al thin films containing ~10 wt pct Al and with 14.5 nm average grain size were produced by magnetron sputtering and subjected to heat treatments. The grain growth evolution in the early stages of heat treatment at 423 K, 473 K, and 573 K (150 °C, 200 °C, and 300 °C) was observed with transmission electron microscopy and analyzed based upon the classical equation developed by Burke and Turnbull.more » The grain growth exponent was found to be 7 ± 2 and the activation energy for grain growth was 31.1 ± 13.4 kJ/mol, the latter being significantly lower than in bulk Mg-Al alloys. The observed grain growth kinetics are explained by the Al supersaturation in the matrix and the pinning effects of the rapidly forming beta precipitates and possibly shallow grain boundary grooves. In conclusion, the low activation energy is attributed to the rapid surface diffusion which is dominant in thin film systems.« less

Grain Growth in Nanocrystalline Mg-Al Thin Films

NASA Astrophysics Data System (ADS)

Kruska, Karen; Rohatgi, Aashish; Vemuri, Rama S.; Kovarik, Libor; Moser, Trevor H.; Evans, James E.; Browning, Nigel D.

2017-12-01

An improved understanding of grain growth kinetics in nanocrystalline materials, and in metals and alloys in general, is of continuing interest to the scientific community. In this study, Mg-Al thin films containing 10 wt pct Al and with 14.5 nm average grain size were produced by magnetron sputtering and subjected to heat treatments. The grain growth evolution in the early stages of heat treatment at 423 K, 473 K, and 573 K (150 °C, 200 °C, and 300 °C) was observed with transmission electron microscopy and analyzed based upon the classical equation developed by Burke and Turnbull. The grain growth exponent was found to be 7 ± 2 and the activation energy for grain growth was 31.1 ± 13.4 kJ/mol, the latter being significantly lower than in bulk Mg-Al alloys. The observed grain growth kinetics are explained by the Al supersaturation in the matrix and the pinning effects of the rapidly forming beta precipitates and possibly shallow grain boundary grooves. The low activation energy is attributed to the rapid surface diffusion which is dominant in thin film systems.

Sol-gel derived Al-Ga co-doped transparent conducting oxide ZnO thin films

DOE Office of Scientific and Technical Information (OSTI.GOV)

Serrao, Felcy Jyothi, E-mail: jyothiserrao@gmail.com; Department of Physics, Karnataka Government Research centre SCEM, Mangalore, 575007; Sandeep, K. M.

2016-05-23

Transparent conducting ZnO doped with Al, Ga and co-doped Al and Ga (1:1) (AGZO) thin films were grown on glass substrates by cost effective sol-gel spin coating method. The XRD results showed that all the films are polycrystalline in nature and highly textured along the (002) plane. Enhanced grain size was observed in the case of AGZO thin films. The transmittance of all the films was more than 83% in the visible region of light. The electrical properties such as carrier concentration and mobility values are increased in case of AGZO compared to that of Al and Ga doped ZnOmore » thin films. The minimum resistivity of 2.54 × 10{sup −3} Ω cm was observed in AGZO thin film. The co-doped AGZO thin films exhibited minimum resistivity and high optical transmittance, indicate that co-doped ZnO thin films could be used in transparent electronics mainly in display applications.« less

Effect of substrate on thermoelectric properties of Al-doped ZnO thin films

NASA Astrophysics Data System (ADS)

Mele, P.; Saini, S.; Honda, H.; Matsumoto, K.; Miyazaki, K.; Hagino, H.; Ichinose, A.

2013-06-01

We have prepared 2% Al doped ZnO (AZO) thin films on SrTiO3 (STO) and Al2O3 substrates by Pulsed Laser Deposition technique at various deposition temperatures (Tdep = 300 °C-600 °C). Transport and thermoelectric properties of AZO thin films were studied in low temperature range (300 K-600 K). AZO/STO films present superior performance respect to AZO/Al2O3 films deposited at the same temperature, except for films deposited at 400 °C. Best film is the fully c-axis oriented AZO/STO deposited at 300 °C, which epitaxial strain and dislocation density are the lowest: electrical conductivity 310 S/cm, Seebeck coefficient -65 μV/K, and power factor 0.13 × 10-3 W m-1 K-2 at 300 K. Its performance increases with temperature. For instance, power factor is enhanced up to 0.55 × 10-3 W m-1 K-2 at 600 K, surpassing the best AZO film previously reported in literature.

Growth dynamics of reactive-sputtering-deposited AlN films

DOE Office of Scientific and Technical Information (OSTI.GOV)

Auger, M.A.; Vazquez, L.; Sanchez, O.

2005-06-15

We have studied the surface kinetic roughening of AlN films grown on Si(100) substrates by dc reactive sputtering within the framework of the dynamic scaling theory. Films deposited under the same experimental conditions for different growth times were analyzed by atomic force microscopy and x-ray diffraction. The AlN films display a (002) preferred orientation. We have found two growth regimes with a crossover time of 36 min. In the first regime, the growth dynamics is unstable and the films present two types of textured domains, well textured and randomly oriented, respectively. In contrast, in the second regime the films aremore » homogeneous and well textured, leading to a relative stabilization of the surface roughness characterized by a growth exponent {beta}=0.37{+-}0.03. In this regime a superrough scaling behavior is found with the following exponents: (i) Global exponents: roughness exponent {alpha}=1.2{+-}0.2 and {beta}=0.37{+-}0.03 and coarsening exponent 1/z=0.32{+-}0.05; (ii) local exponents: {alpha}{sub loc}=1, {beta}{sub loc}=0.32{+-}0.01. The differences between the growth modes are found to be related to the different main growth mechanisms dominating their growth dynamics: sticking anisotropy and shadowing, respectively.« less

Far-infrared transmission in GaN, AlN, and AlGaN thin films grown by molecular beam epitaxy

DOE Office of Scientific and Technical Information (OSTI.GOV)

Ibanez, J.; Hernandez, S.; Alarcon-Llado, E.

2008-08-01

We present a far-infrared transmission study on group-III nitride thin films. Cubic GaN and AlN layers and c-oriented wurtzite GaN, AlN, and Al{sub x}Ga{sub 1-x}N (x<0.3) layers were grown by molecular beam epitaxy on GaAs and Si(111) substrates, respectively. The Berreman effect allows us to observe simultaneously the transverse optic and the longitudinal optic phonons of both the cubic and the hexagonal films as transmission minima in the infrared spectra acquired with obliquely incident radiation. We discuss our results in terms of the relevant electromagnetic theory of infrared transmission in cubic and wurtzite thin films. We compare the infrared resultsmore » with visible Raman-scattering measurements. In the case of films with low scattering volumes and/or low Raman efficiencies and also when the Raman signal of the substrate material obscures the weaker peaks from the nitride films, we find that the Berreman technique is particularly useful to complement Raman spectroscopy.« less

Formation and Corrosion Resistance of Mg-Al Hydrotalcite Film on Mg-Gd-Zn Alloy

NASA Astrophysics Data System (ADS)

Ba, Z. X.; Dong, Q. S.; Kong, S. X.; Zhang, X. B.; Xue, Y. J.; Chen, Y. J.

2017-06-01

An environment-friendly technique for depositing a Mg-Al hydrotalcite (HT) (Mg6Al2(OH)16-CO3ṡ4H2O) conversion film was developed to protect the Mg-Gd-Zn alloy from corrosion. The morphology and chemical compositions of the film were analyzed by scanning electronic microscope (SEM) equipped with energy dispersive X-ray spectroscopy (EDS), X-ray diffraction (XRD) and Raman spectroscopy (RS), respectively. The electrochemical test and hydrogen evolution test were employed to evaluate the biocorrosion behavior of Mg-Gd-Zn alloy coated with the Mg-Al HT film in the simulated body fluid (SBF). It was found that the formation of Mg-Al HT film was a transition from amorphous precursor to a crystalline HT structure. The HT film can effectively improve the corrosion resistance of magnesium alloy. It indicates that the process provides a promising approach to modify Mg-Gd-Zn alloy.

Core/shell CuO/Al Nanorods Thermite Film Based on Electrochemical Anodization.

PubMed

Yu, Chunpei; Zhang, Wenchao; Hu, Bin; Ni, Debin; Zheng, Zilong; Liu, Jingping; Ma, Kefeng; Ren, Wei

2018-06-13

In this study, a new method was reported for the fabrication of the nanostructured CuO/Al thermite film on the Cu substrate. The CuO nanorods (NRs) arrays vertically grew from the Cu surfaces by electrochemical anodization processes, followed by the deposition of an Al layer on the CuO NRs via magnetron sputtering to form a core/shell CuO/Al nanothermite film, whose component, structure and morphology were subsequently characterized. In addition, the energy-release characteristics of the obtained nanothermite film was investigated using thermal analyses and laser ignition tests. All evidences demonstrate that the obtained CuO/Al is of a uniform structure and superb energy performance. Impressively, this resulted material is potentially useful in the applications of functional energetic chips due to its easy integration with microelectromechanical systems (MEMS) technologies. © 2018 IOP Publishing Ltd.

CuAlO2 and CuAl2O4 thin films obtained by stacking Cu and Al films using physical vapor deposition

NASA Astrophysics Data System (ADS)

Castillo-Hernández, G.; Mayén-Hernández, S.; Castaño-Tostado, E.; DeMoure-Flores, F.; Campos-González, E.; Martínez-Alonso, C.; Santos-Cruz, J.

2018-06-01

CuAlO2 and CuAl2O4 thin films were synthesized by the deposition of the precursor metals using the physical vapor deposition technique and subsequent annealing. Annealing was carried out for 4-6 h in open and nitrogen atmospheres respectively at temperatures of 900-1000 °C with control of heating and cooling ramps. The band gap measurements ranged from 3.3 to 4.5 eV. Electrical properties were measured using the van der Pauw technique. The preferred orientations of CuAlO2 and CuAl2O4 were found to be along the (1 1 2) and (3 1 1) planes, respectively. The phase percentages were quantified using a Rietveld refinement simulation and the energy dispersive X-ray spectroscopy indicated that the composition is very close to the stoichiometry of CuAlO2 samples and with excess of aluminum and deficiency of copper for CuAl2O4 respectively. High resolution transmission electron microscopy identified the principal planes in CuAlO2 and in CuAl2O4. Higher purities were achieved in nitrogen atmosphere with the control of the cooling ramps.

RHEED and EELS study of Pd/Al bimetallic thin film growth on different α-Al 2O 3 substrates

NASA Astrophysics Data System (ADS)

Moroz, V.; Rajs, K.; Mašek, K.

2002-06-01

Pd/Al bimetallic thin films were grown by molecular beam epitaxy on single-crystalline α-Al 2O 3(0 0 0 1) and (1 1 2¯ 0) surfaces. Substrate and deposit crystallographic structures and evolution of deposit lattice parameter during the growth were studied by reflection high-energy electron diffraction. The electron energy loss spectroscopy was used as an auxiliary method for chemical analysis. The bimetallic films were prepared by successive deposition of both Pd and Al metals. The structure of Pd and Al deposits in early stages of the growth and its dependence on the preparation conditions were studied. Two phases of Pd clusters covered by Al overlayer have been found. The formation of Al overlayer strongly influenced the lattice parameter of Pd clusters.

Deposition of Cubic AlN Films on MgO (100) Substrates by Laser Molecular Beam Epitaxy

NASA Astrophysics Data System (ADS)

Mo, Z. K.; Yang, W. J.; Weng, Y.; Fu, Y. C.; He, H.; Shen, X. M.

2017-12-01

Cubic AlN (c-AlN) films were deposited on MgO (100) substrates by laser molecular beam epitaxy (LMBE) technique. The crystal structure and surface morphology of deposited films with various laser pulse energy and substrate temperature were investigated. The results indicate that c-AlN films exhibit the (200) preferred orientation, showing a good epitaxial relationship with the substrate. The surface roughness of c-AlN films increases when the laser pulse energy and substrate temperature increase. The film grown at laser pulse energy of 150 mJ and substrate temperature of 700 °C shows the best crystalline quality and relatively smooth surface.

Spray pyrolysis synthesized Cu(In,Al)(S,Se)2 thin films solar cells

NASA Astrophysics Data System (ADS)

Aamir Hassan, Muhammad; Mujahid, Mohammad; Woei, Leow Shin; Wong, Lydia Helena

2018-03-01

Cu(In,Al)(S,Se)2 thin films are prepared by the Spray pyrolysis of aqueous precursor solutions of copper, indium, aluminium and sulphur sources. The bandgap of the films was engineered by aluminium (Al) doping in CISSe films deposited on molybdenum (Mo) coated glass substrate. The as-sprayed thin films were selenized at 500 °C for 10 min. Cadmium sulphide (CdS) buffer layer was deposited by chemical bath deposition process. Solar cell devices were fabricated with configuration of glass/Mo/CIASSe/CdS/i-ZnO/AZO. The solar cell device containing thin film of Cu(In,Al)(S,Se)2 with our optimized composition shows j-V characteristics of Voc = 0.47 V, jsc = 21.19 mA cm-2, FF = 52.88% and power conversion efficiency of 5.27%, under AM 1.5, 100 mW cm-2 illumination.

Photoluminescence of Er-doped silicon-rich oxide thin films with high Al concentrations

NASA Astrophysics Data System (ADS)

Rozo, Carlos; Fonseca, Luis F.; Jaque, Daniel; García Solé, José

Er-doped silicon-rich oxide (SRO) thin films co-doped with Al in high concentrations were prepared by sputtering. Some films were deposited using a substrate heater (150 °CFilms deposited without using substrate heating were annealed to 700 °C. The photoluminescence (PL) of most of the former films was greater than the PL of the latter films. Excitation wavelength dependence (EWD) of Er ion emission presents variations as the O content decreases and the Al content increases. The dependence of the Er ion 980 nm peak PL with respect to the Er ion 1525 nm peak PL indicates that the first emission depends less on energy transfer upconversion (ETU) processes as the O content decreases and the Al content increases. Broadband excitable Er3+ infrared (IR) emission with less loss due to ETU processes is important for applications in photonics.

Enhanced Performance in Al-Doped ZnO Based Transparent Flexible Transparent Thin-Film Transistors Due to Oxygen Vacancy in ZnO Film with Zn-Al-O Interfaces Fabricated by Atomic Layer Deposition.

PubMed

Li, Yang; Yao, Rui; Wang, Huanhuan; Wu, Xiaoming; Wu, Jinzhu; Wu, Xiaohong; Qin, Wei

2017-04-05

Highly conductive and optical transparent Al-doped ZnO (AZO) thin film composed of ZnO with a Zn-Al-O interface was fabricated by thermal atomic layer deposition (ALD) method. The as-prepared AZO thin film exhibits excellent electrical and optical properties with high stability and compatibility with temperature-sensitive flexible photoelectronic devices; film resistivity is as low as 5.7 × 10 -4 Ω·cm, the carrier concentration is high up to 2.2 × 10 21 cm -3 . optical transparency is greater than 80% in a visible range, and the growth temperature is below 150 °C on the PEN substrate. Compared with the conventional AZO film containing by a ZnO-Al 2 O 3 interface, we propose that the underlying mechanism of the enhanced electrical conductivity for the current AZO thin film is attributed to the oxygen vacancies deficiency derived from the free competitive growth mode of Zn-O and Al-O bonds in the Zn-Al-O interface. The flexible transparent transistor based on this AZO electrode exhibits a favorable threshold voltage and I on /I off ratio, showing promising for use in high-resolution, fully transparent, and flexible display applications.

Microstructure engineering of Pt-Al alloy thin films through Monte Carlo simulations

NASA Astrophysics Data System (ADS)

Harris, R. A.; Terblans, J. J.; Swart, H. C.

2014-06-01

A kinetic algorithm, based on the regular solution model, was used in conjunction with the Monte Carlo method to simulate the evolution of a micro-scaled thin film system during exposure to a high temperature environment. Pt-Al thin films were prepared via electron beam physical vapor deposition (EB-PVD) with an atomic concentration ratio of Pt63:Al37. These films were heat treated at an annealing temperature of 400 °C for 16 and 49 minutes. Scanning Auger Microscopy (SAM) (PHI 700) was used to obtain elemental maps while sputtering through the thin films. Simulations were run for the same annealing temperatures and thin-film composition. From these simulations theoretical depth profiles and simulated microstructures were obtained. These were compared to the experimentally measured depth profiles and elemental maps.

Microstructure control of Al-Cu films for improved electromigration resistance

DOEpatents

Frear, Darrel R.; Michael, Joseph R.; Romig, Jr., Alton D.

1994-01-01

A process for the forming of Al-Cu conductive thin films with reduced electromigration failures is useful, for example, in the metallization of integrated circuits. An improved formation process includes the heat treatment or annealing of the thin film conductor at a temperature within the range of from 200.degree. C. to 300.degree. C. for a time period between 10 minutes and 24 hours under a reducing atmosphere such as 15% H.sub.2 in N.sub.2 by volume. Al-Cu thin films annealed in the single phase region of a phase diagram, to temperatures between 200.degree. C. and 300.degree. C. have .theta.-phase Al.sub.2 Cu precipitates at the grain boundaries continuously become enriched in copper, due, it is theorized, to the formation of a thin coating of .theta.-phase precipitate at the grain boundary. Electromigration behavior of the aluminum is, thus, improved because the .theta.-phase precipitates with copper hinder aluminum diffusion along the grain boundaries. Electromigration, then, occurs mainly within the aluminum grains, a much slower process.

Microstructure control of Al-Cu films for improved electromigration resistance

DOEpatents

Frear, D.R.; Michael, J.R.; Romig, A.D. Jr.

1994-04-05

A process for the forming of Al-Cu conductive thin films with reduced electromigration failures is useful, for example, in the metallization of integrated circuits. An improved formation process includes the heat treatment or annealing of the thin film conductor at a temperature within the range of from 200 C to 300 C for a time period between 10 minutes and 24 hours under a reducing atmosphere such as 15% H[sub 2] in N[sub 2] by volume. Al-Cu thin films annealed in the single phase region of a phase diagram, to temperatures between 200 C and 300 C have [theta]-phase Al[sub 2] Cu precipitates at the grain boundaries continuously become enriched in copper, due, it is theorized, to the formation of a thin coating of [theta]-phase precipitate at the grain boundary. Electromigration behavior of the aluminum is, thus, improved because the [theta]-phase precipitates with copper hinder aluminum diffusion along the grain boundaries. Electromigration, then, occurs mainly within the aluminum grains, a much slower process. 5 figures.

Growth of high quality AlN films on CVD diamond by RF reactive magnetron sputtering

NASA Astrophysics Data System (ADS)

Chen, Liang-xian; Liu, Hao; Liu, Sheng; Li, Cheng-ming; Wang, Yi-chao; An, Kang; Hua, Chen-yi; Liu, Jin-long; Wei, Jun-jun; Hei, Li-fu; Lv, Fan-xiu

2018-02-01

A highly oriented AlN layer has been successfully grown along the c-axis on a polycrystalline chemical vapor deposited (CVD) diamond by RF reactive magnetron sputtering. Structural, morphological and mechanical properties of the heterostructure were investigated by Scanning Electron Microscopy (SEM), Atomic Force Microscopy (AFM), Transmission Electron Microscopy (TEM), X-ray diffraction (XRD), Nano-indentation and Four-probe meter. A compact AlN film was demonstrated on the diamond layer, showing columnar grains and a low surface roughness of 1.4 nm. TEM results revealed a sharp AlN/diamond interface, which was characterized by the presence of a distinct 10 nm thick buffer layer resulting from the initial AlN growth stage. The FWHM of AlN (002) diffraction peak and its rocking curve are as low as 0.41° and 3.35° respectively, indicating a highly preferred orientation along the c-axis. AlN sputtered films deposited on glass substrates show a higher bulk resistivity (up to 3 × 1012 Ω cm), compared to AlN films deposited on diamond (∼1010 Ω cm). Finally, the film hardness and Young's modulus of AlN films on diamond are 25.8 GPa and 489.5 GPa, respectively.

Localized phase change of VO2 films grown by atomic-layer deposition on InAlN/AlN/GaN heterostructures

NASA Astrophysics Data System (ADS)

Downey, Brian P.; Wheeler, Virginia D.; Meyer, David J.

2017-06-01

We demonstrate the thermally actuated phase change of VO2 films formed by atomic layer deposition and subsequent thermal annealing on InAlN/AlN/GaN heterostructures. To locally raise the device temperature above the VO2 semiconductor-metal transition temperature, a two-dimensional electron gas formed within the InAlN/AlN/GaN heterostructure was used as an integrated resistive heater. An ON/OFF resistance ratio of nearly 103 was achieved for 50 nm VO2 films over a temperature range of 25 to 105 °C. The time required to switch the VO2 film from high- to low-resistance states was shown to depend on the applied heater power, with sub-microsecond transition times achieved.

CROSS-DISCIPLINARY PHYSICS AND RELATED AREAS OF SCIENCE AND TECHNOLOGY: Excellent Passivation of p-Type Si Surface by Sol-Gel Al2O3 Films

NASA Astrophysics Data System (ADS)

Xiao, Hai-Qing; Zhou, Chun-Lan; Cao, Xiao-Ning; Wang, Wen-Jing; Zhao, Lei; Li, Hai-Ling; Diao, Hong-Wei

2009-08-01

Al2O3 films with a thickness of about 100 nm synthesized by spin coating and thermally treated are applied for field-induced surface passivation of p-type crystalline silicon. The level of surface passivation is determined by techniques based on photoconductance. An effective surface recombination velocity below 100 cm/s is obtained on 10Ω ·cm p-type c-Si wafers (Cz Si). A high density of negative fixed charges in the order of 1012 cm-2 is detected in the Al2O3 films and its impact on the level of surface passivation is demonstrated experimentally. Furthermore, a comparison between the surface passivation achieved for thermal SiO2 and plasma enhanced chemical vapor deposition SiNx:H films on the same c-Si is presented. The high negative fixed charge density explains the excellent passivation of p-type c-Si by Al2O3.

Thermoelectric Properties of Al-Doped ZnO Thin Films

NASA Astrophysics Data System (ADS)

Saini, S.; Mele, P.; Honda, H.; Matsumoto, K.; Miyazaki, K.; Ichinose, A.

2014-06-01

We have prepared 2 % Al-doped ZnO (AZO) thin films on SrTiO3 substrates by a pulsed laser deposition technique at various deposition temperatures ( T dep = 300-600 °C). The thermoelectric properties of AZO thin films were studied in a low temperature range (300-600 K). Thin film deposited at 300 °C is fully c-axis-oriented and presents electrical conductivity 310 S/cm with Seebeck coefficient -65 μV/K and power factor 0.13 × 10-3 Wm-1 K-2 at 300 K. The performance of thin films increases with temperature. For instance, the power factor is enhanced up to 0.55 × 10-3 Wm-1 K-2 at 600 K, surpassing the best AZO film previously reported in the literature.

Superhard self-lubricating AlMgB14 films for microelectromechanical devices

NASA Astrophysics Data System (ADS)

Tian, Y.; Bastawros, A. F.; Lo, C. C. H.; Constant, A. P.; Russell, A. M.; Cook, B. A.

2003-10-01

Performance and reliability of microelectromechanical system (MEMS) components can be enhanced dramatically through the incorporation of protective thin-film coatings. Current-generation MEMS devices prepared by the lithographie-galvanoformung-abformung (LIGA) technique employ transition metals such as Ni, Cu, Fe, or alloys thereof, and hence lack stability in oxidizing, corrosive, and/or high-temperature environments. Fabrication of a superhard self-lubricating coating based on a ternary boride compound AlMgB14 described in this letter has great potential in protective coating technology for LIGA microdevices. Nanoindentation tests show that the hardness of AlMgB14 films prepared by pulsed laser deposition ranges from 45 GPa to 51 GPa, when deposited at room temperature and 573 K, respectively. Extremely low friction coefficients of 0.04-0.05, which are thought to result from a self-lubricating effect, have also been confirmed by nanoscratch tests on the AlMgB14 films. Transmission electron microscopy studies show that the as-deposited films are amorphous, regardless of substrate temperature; however, analysis of Fourier transform infrared spectra suggests that the higher substrate temperature facilitates the formation of the B12 icosahedral framework, therefore leading to the higher hardness.

Structural and mechanical properties of Al-C-N films deposited at room temperature by plasma focus device

NASA Astrophysics Data System (ADS)

Z, A. Umar; R, Ahmad; R, S. Rawat; M, A. Baig; J, Siddiqui; T, Hussain

2016-07-01

The Al-C-N films are deposited on Si substrates by using a dense plasma focus (DPF) device with aluminum fitted central electrode (anode) and by operating the device with CH4/N2 gas admixture ratio of 1:1. XRD results verify the crystalline AlN (111) and Al3CON (110) phase formation of the films deposited using multiple shots. The elemental compositions as well as chemical states of the deposited Al-C-N films are studied using XPS analysis, which affirm Al-N, C-C, and C-N bonding. The FESEM analysis reveals that the deposited films are composed of nanoparticles and nanoparticle agglomerates. The size of the agglomerates increases at a higher number of focus deposition shots for multiple shot depositions. Nanoindentation results reveal the variation in mechanical properties (nanohardness and elastic modulus) of Al-C-N films deposited with multiple shots. The highest values of nanohardness and elastic modulus are found to be about 11 and 185 GPa, respectively, for the film deposited with 30 focus deposition shots. The mechanical properties of the films deposited using multiple shots are related to the Al content and C-N bonding.

Synthesis and characterization of magnesium aluminate (MgAl2O4) spinel (MAS) thin films

NASA Astrophysics Data System (ADS)

Ahmad, Syed Muhammad; Hussain, Tousif; Ahmad, Riaz; Siddiqui, Jamil; Ali, Dilawar

2018-01-01

In a quest to identify more economic routes for synthesis of magnesium aluminate (MgAl2O4) spinel (MAS) thin films, dense plasma focus device was used with multiple plasma focus shots. Structural, bonding between composite films, surface morphological, compositional and hardness properties of MAS thin films were investigated by using x-ray diffraction (XRD), Fourier transform infrared spectroscopy (FTIR), scanning electron microscopy (SEM), energy dispersive x-rays (EDX) analysis and Vickers micro hardness test respectively. In XRD graph, the presence of MgAl2O4 diffraction peaks in crystallographic orientations (222), (400) and (622) pointed out the successful formation of polycrystalline thin films of MgAl2O4 with face centered cubic structure. The FTIR spectrums showed a major common transmittance band at 697.95 cm-1 which belongs to MgAl2O4. SEM micrographs illustrated a mesh type, granular and multi layers microstructures with significant melting effects. EDX spectrum confirmed the existence of magnesium, oxygen and aluminum in MAS films. A common increasing behavior in micro-hardness of composite MgAl2O4 films by increasing number of plasma focus shots was found.

AZO films with Al nano-particles to improve the light extraction efficiency of GaN-based light-emitting diodes

NASA Astrophysics Data System (ADS)

Chou, Ying-Hung; Yan, Jheng-Tai; Lee, Hsin-Ying; Lee, Ching-Ting

2008-02-01

The co-sputtering Al-doped ZnO (AZO) films with Al nano-particles were used to increase the extraction efficiency of GaN-based light-emitting diodes (LEDs). Fixing the ZnO radio frequency (RF) power of 100W and changing the Al DC power from 0 to 13W, the AZO films with various Al contents can be obtained. In the experimental results, the AZO films deposited with Al DC power of 0, 4.5 and 7W do not have Al segregation. However, the segregated Al nano-particles can be found in the AZO films deposited by Al DC power of 10W and 13W. The co-sputtering 170 nm-thick AZO films with and without Al nano-particles were deposited on the transparent area of LEDs and compared the light output intensity of conventional LEDs. The light intensity of LEDs with AZO films with Al DC power 0, 4.5 and 7W increased 10% than that of conventional LEDs. This was due to the AZO film played a role of anti-reflection coating (ARC) layer. The light intensity of LEDs with AZO film deposited using Al DC power of 10W and 13W increased about 35% and 30%, respectively. It can be deduced that the output light is scattered by the Al nano-particles existed in the AZO film.

A Comparison of MOCLD With PLD Ba(x)Sr(1-x)TiO3 Thin Films on LaAlO3 for Tunable Microwave Applications

NASA Technical Reports Server (NTRS)

VanKeuls, F. W.; Mueller, C. H.; Romanofsky, R. R.; Warner, J. D.; Miranda, F. A.; Jiang, H.

2002-01-01

Historically, tunable dielectric devices using thin crystalline Ba(x)Sr(1-x)TiO3 (BST) films deposited on lattice-matched substrates, such as LaAlO3, have generally been grown using pulsed laser deposition (PLD). Highly oriented BST films can be grown by PLD but large projects are hampered by constraints of deposition area, deposition time and expense. The Metal-Organic Chemical Liquid Deposition (MOCLD) process allows for larger areas, faster turnover and lower cost. Several BST films deposited on LaAlO3 by MOCLD have been tested in 16 GHz coupled microstrip phase shifters. They can be compared with many PLD BST films tested in the same circuit design. The MOCLD phase shifter performance of 293 deg. phase shift with 53 V/micron dc bias and a figure of merit of 47 deg./dB is comparable to the most highly oriented PLD BST films. The PLD BST films used here have measured XRD full-width-at-half-maxima (FWHM) as low as 0.047 deg.. The best FWHM of these MOCLD BST films has been measured to be 0.058 deg.

Improvement of thermal stability of nano-granular TMR films by using a Mg-Al-O insulator matrix

NASA Astrophysics Data System (ADS)

Kanie, S.; Koyama, S.

2018-05-01

A new metal-insulator nano-granular tunneling magnetoresistance (TMR) film made of (Fe-Co)-(Mg-Al-O) has been investigated. It is confirmed that the film has granular structure in which crystal Fe-Co granules are surrounded by an amorphous Mg-Al-O matrix. A large MR ratio of 11.8 % at room temperature is observed for a 42 vol.%(Fe0.6Co0.4)-(Mg-Al-O) film annealed at 395 °C. The electrical resistivity increases rapidly by annealing at above the changing point (500 °C). The changing point is about 300 °C higher than that of conventional (Fe-Co)-(Mg-F) nano-granular TMR films. The 42 vol.%(Fe0.6Co0.4)-(Mg-Al-O) film also exhibits less degradation in the MR ratio at high annealing temperatures such as 600 °C. These results suggest the (Fe-Co)-(Mg-Al-O) film is superior to the (Fe-Co)-(Mg-F) film in thermal stability.

Gold nanoparticle plasmon resonance in near-field coupled Au NPs layer/Al film nanostructure: Dependence on metal film thickness

NASA Astrophysics Data System (ADS)

Yeshchenko, Oleg A.; Kozachenko, Viktor V.; Naumenko, Antonina P.; Berezovska, Nataliya I.; Kutsevol, Nataliya V.; Chumachenko, Vasyl A.; Haftel, Michael; Pinchuk, Anatoliy O.

2018-05-01

We study the effects of coupling between plasmonic metal nanoparticles and a thin metal film by using light extinction spectroscopy. A planar monolayer of gold nanoparticles located near an aluminum thin film (thicknesses within the range of 0-62 nm) was used to analyze the coupling between the monolayer and the thin metal film. SPR peak area increase for polymer coated Au NPs, non-monotonical behavior of the peak area for bare Au NPs, as well as red shift and broadening of SPR at the increase of the Al film thickness have been observed. These effects are rationalized as a result of coupling of the layer of Au NPs with Al film through the field of localized surface plasmons in Au NPs that causes the excitation of collective plasmonic gap mode in the nanostructure. An additional mechanism for bare Au NPs is the non-radiative damping of SPR that is caused by the electrical contact between metal NPs and film.

Growth of high-quality AlN epitaxial film by optimizing the Si substrate surface

NASA Astrophysics Data System (ADS)

Huang, Liegen; Li, Yuan; Wang, Wenliang; Li, Xiaochan; zheng, Yulin; Wang, Haiyan; Zhang, Zichen; Li, Guoqiang

2018-03-01

High-quality AlN epitaxial films have been grown on Si substrates by optimizing the hydrofluoric acid (HF) solution for cleaning of Si substrates. Effect of the Si substrate surface on the surface morphology and structural property of AlN epitaxial films is investigated in detail. It is revealed that as the concentration of HF solution increases from 0 to 2.0%, the surface morphology and the crystalline quality are initially improved and then get worse, and show an optimized value at 1.5%. The as-grown ∼200 nm-thick AlN epitaxial films on Si substrates grown with HF solution of 1.5% reveal the root-mean-square (RMS) surface roughness of 0.49 nm and the full-width at half-maximum for AlN(0002) X-ray rocking curve of 0.35°, indicating the smooth surface morphology and the high crystalline quality. The corresponding mechanism is proposed to interpret the effect of Si substrate surface on surface morphology and structural property of AlN epitaxial films, and provides an effective approach for the perspective fabrication of AlN-based devices.

Z-scan measurement for nonlinear absorption property of rGO/ZnO:Al thin film

NASA Astrophysics Data System (ADS)

Sreeja, V. G.; Anila, E. I.

2018-04-01

We report the fabrication of reduced graphene oxide integrated aluminium doped zinc oxide (rGO/ZnO:Al) composite thin film on a glass substrate by spin coating technique. The effect of rGO on structural and linear optical properties of rGO/ZnO:Al composite thin film was explored with the help of X-Ray powder diffraction (XRD), Fourier transform infrared spectroscopy (FTIR) and UV-Vis absorption spectroscopy. Structural studies reveals that the composite film has hexagonal wurtzite structure with a strong bonding between rGO and ZnO:Al material. The band gap energy of ZnO:Al thin film was red shifted by the addition of rGO. The Nonlinear absorption property was investigated by open aperture Z-scan technique by using Q switched Nd-YAG laser at 532nm. The Z-scan results showed that the composite film demonstrates reverse saturable absorption property with a nonlinear absorption coefficient, β, of 12.75×10-7m/w. The results showed that investigated rGO/ZnO:Al thin film is a promising material suitable for the applications in absorbing type optical devices such as optical limiters, optical switches and protection of the optical sensors in the field of nonlinear optics.

Structure and thermoelectric properties of Al-doped ZnO films prepared by thermal oxidization under high magnetic field

NASA Astrophysics Data System (ADS)

Liu, Shiying; Peng, Sunjuan; Ma, Jun; Li, Guojian; Qin, Xuesi; Li, Mengmeng; Wang, Qiang

2017-04-01

This paper studies the effects of high magnetic field (HMF) on the structure, optical and thermoelectric properties of the doped ZnO thin films. The results show that both Al dopant and application of HMF can affect the crystal structure, surface morphology, elemental distribution and so on. The particles of the thin films become small and regular by doping Al. The ZnO films oxidized from the Au/Zn bilayer have needle structure. The ZnO films oxidized from the Au/Zn-Al bilayer transform to spherical from hexagonal due to the application of HMF. The transmittance decreases with doping Al because of the opaque of Al element and decreases with the application of HMF due to the dense structure obtained under HMF. Electrical resistivity (ρ) of the ZnO films without Al decreases with increasing measurement temperature (T) and is about 1.5 × 10-3 Ω·m at 210 °C. However, the ρ of the Al-doped ZnO films is less than 10-5 Ω·m. The Seebeck coefficient (S) of the films oxidized from the Au/Zn-Al films reduces with increasing T. The S values oxidized under 0 T and 12 T conditions are 2.439 μV/K and -3.415 μV/K at 210 °C, respectively. Power factor reaches the maximum value (3.198 × 10-4 W/m·K2) at 210 °C for the film oxidized under 12 T condition. These results indicate that the Al dopant and the application of HMF can be used to control structure and thermoelectric properties of doped ZnO films.

Effect of annealing temperature on the microstructure and optical-electrical properties of Cu-Al-O thin films

NASA Astrophysics Data System (ADS)

Zhang, Y. J.; Liu, Z. T.; Zang, D. Y.; Che, X. S.; Feng, L. P.; Bai, X. X.

2013-12-01

We have successfully prepared Cu-Al-O thin films on silicon (100) and quartz substrates by radio frequency (RF) magnetron sputtering method. The as-deposited Cu-Al-O film is amorphous in nature and post-annealing treatment in argon ambience results in crystallization of the films and the formation of CuAlO2. The annealing temperature plays an important role in the surface morphology, phase constitution and preferred growth orientation of CuAlO2 phase, thus affecting the properties of the film. The film annealed at 900 °C is mainly composed of CuAlO2 phase and shows smooth surface morphology with well-defined grain boundaries, thus exhibiting the optimum optical-electrical properties with electrical resistivity being 79.7 Ω·cm at room temperature and optical transmittance being 80% in visible region. The direct optical band gaps of the films are found in the range of 3.3-3.8 eV depending on the annealing temperature.

Large magnetization and high Curie temperature in highly disordered nanoscale Fe2CrAl thin films

NASA Astrophysics Data System (ADS)

Dulal, Rajendra P.; Dahal, Bishnu R.; Forbes, Andrew; Pegg, Ian L.; Philip, John

2017-02-01

We have successfully grown nanoscale Fe2CrAl thin films on polished Si/SiO2 substrates using an ultra-high vacuum deposition with a base pressure of 9×10-10 Torr. The thickness of thin films ranges from 30 to 100 nm. These films exhibit cubic crystal structure with lattice disorder and display ferromagnetic behavior. The Curie temperature is greater than 400 K, which is much higher than that reported for bulk Fe2CrAl. The magnetic moments of the films varies from 2.5 to 2.8 μB per formula unit, which is larger than the reported bulk values. Thus, the disordered nanoscale Fe2CrAl films exhibit strong Fe-Fe exchange interactions through Fe-Cr-Fe and Fe-Al-Fe layers, resulting in both a large magnetization and a high Curie temperature.

Polarity inversion of AlN film grown on nitrided a-plane sapphire substrate with pulsed DC reactive sputtering

NASA Astrophysics Data System (ADS)

Noorprajuda, Marsetio; Ohtsuka, Makoto; Fukuyama, Hiroyuki

2018-04-01

The effect of oxygen partial pressure (PO2) on polarity and crystalline quality of AlN films grown on nitrided a-plane sapphire substrates by pulsed direct current (DC) reactive sputtering was investigated as a fundamental study. The polarity inversion of AlN from nitrogen (-c)-polarity to aluminum (+c)-polarity occurred during growth at a high PO2 of 9.4×103 Pa owing to Al-O octahedral formation at the interface of nitrided layer and AlN sputtered film which reset the polarity of AlN. The top part of the 1300 nm-thick AlN film sputtered at the high PO2 was polycrystallized. The crystalline quality was improved owing to the high kinetic energy of Al sputtered atom in the sputtering phenomena. Thinner AlN films were also fabricated at the high PO2 to eliminate the polycrystallization. For the 200 nm-thick AlN film sputtered at the high PO2, the full width at half-maximum values of the AlN (0002) and (10-12) X-ray diffraction rocking curves were 47 and 637 arcsec, respectively.

High Stability Performance of Quinary Indium Gallium Zinc Aluminum Oxide Films and Thin-Film Transistors Deposited Using Vapor Cooling Condensation Method

NASA Astrophysics Data System (ADS)

Lin, Yung-Hao; Lee, Ching-Ting

2017-08-01

High-quality indium gallium zinc aluminum oxide (IGZAO) thin films with various Al contents have been deposited using the vapor cooling condensation method. The electron mobility of the IGZAO films was improved by 89.4% on adding Al cation to IGZO film. The change in the electron concentration and mobility of the IGZAO films was 7.3% and 7.0%, respectively, when the temperature was changed from 300 K to 225 K. These experimental results confirm the high performance and stability of the IGZAO films. The performance stability mechanisms of IGZAO thin-film transistors (TFTs) were investigated in comparison with IGZO TFTs.

Characterization of AlF3 thin films at 193 nm by thermal evaporation

NASA Astrophysics Data System (ADS)

Lee, Cheng-Chung; Liu, Ming-Chung; Kaneko, Masaaki; Nakahira, Kazuhide; Takano, Yuuichi

2005-12-01

Aluminum fluoride (AlF3) was deposited by a resistive heating boat. To obtain a low optical loss and high laser-induced damage threshold (LIDT) at 193 nm, the films were investigated under different substrate temperatures, deposition rates, and annealing after coating. The optical property (the transmittance, refractive index, extinction coefficient, and optical loss) at 193 nm, microstructure (the cross-sectional morphology, surface roughness, and crystalline structure), mechanical property (stress), and LIDT of AlF3 thin films have been studied. AlF3 thin films deposited at a high substrate temperature and low deposition rate showed a lower optical loss. The highest LIDT occurred at the substrate temperature of 150 °C. The LIDT of the films prepared at a deposition rate of 2 Å/s was higher than that at other deposition rates. The annealing process did not influence the optical properties too much, but it did increase the LIDT and stress.

Characterization of AlF3 thin films at 193 nm by thermal evaporation.

PubMed

Lee, Cheng-Chung; Liu, Ming-Chung; Kaneko, Masaaki; Nakahira, Kazuhide; Takano, Yuuichi

2005-12-01

Aluminum fluoride (AlF3) was deposited by a resistive heating boat. To obtain a low optical loss and high laser-induced damage threshold (LIDT) at 193 nm, the films were investigated under different substrate temperatures, deposition rates, and annealing after coating. The optical property (the transmittance, refractive index, extinction coefficient, and optical loss) at 193 nm, microstructure (the cross-sectional morphology, surface roughness, and crystalline structure), mechanical property (stress), and LIDT of AlF3 thin films have been studied. AlF3 thin films deposited at a high substrate temperature and low deposition rate showed a lower optical loss. The highest LIDT occurred at the substrate temperature of 150 degrees C. The LIDT of the films prepared at a deposition rate of 2 A/s was higher than that at other deposition rates. The annealing process did not influence the optical properties too much, but it did increase the LIDT and stress.

WE-AB-BRB-08: Progress Towards a 2D OSL Dosimetry System Using Al2O3:C Films

DOE Office of Scientific and Technical Information (OSTI.GOV)

Ahmed, M F; Yukihara, E; Schnell, E

Purpose: To develop a 2D dosimetry system based on the optically stimulated luminescence (OSL) of Al{sub 2}O{sub 3}:C films for medical applications. Methods: A 2D laser scanning OSL reader was built for readout of newly developed Al2O3:C films (Landauer Inc.). An image reconstruction algorithm was developed to correct for inherent effects introduced by reader design and detector properties. The system was tested using irradiations with photon and carbon ion beams. A calibration was obtained using a 6 MV photon beam from clinical accelerator and the dose measurement precision was tested using a range of doses and different dose distributions (flatmore » field and wedge field). The dynamic range and performance of the system in the presence of large dose gradients was also tested using 430 MeV/u {sup 12}C single and multiple pencil beams. All irradiations were performed with Gafchromic EBT3 film for comparison. Results: Preliminary results demonstrate a near-linear OSL dose response to photon fields and the ability to measure dose in dose distributions such as flat field and wedge field. Tests using {sup 12}C pencil beam demonstrate ability to measure doses over four orders of magnitude. The dose profiles measured by the OSL film generally agreed well with that measured by the EBT3 film. The OSL image signal-to-noise ratio obtained in the current conditions require further improvement. On the other hand, EBT3 films had large uncertainties in the low dose region due to film-to-film or intra-film variation in the background. Conclusion: A 2D OSL dosimetry system was developed and initial tests have demonstrated a wide dynamic range as well as good agreement between the delivered and measured doses. The low background, wide dynamic range and wide range of linearity in dose response observed for the Al{sub 2}O{sub 3}:C OSL film can be beneficial for dosimetry in radiation therapy applications, especially for small field dosimetry. This work has been funded by Landauer

Combinatorial Study of Gradient Ag-Al Thin Films: Microstructure, Phase Formation, Mechanical and Electrical Properties.

PubMed

Mao, Fang; Taher, Mamoun; Kryshtal, Oleksandr; Kruk, Adam; Czyrska-Filemonowicz, Aleksandra; Ottosson, Mikael; Andersson, Anna M; Wiklund, Urban; Jansson, Ulf

2016-11-09

A combinatorial approach is applied to rapidly deposit and screen Ag-Al thin films to evaluate the mechanical, tribological, and electrical properties as a function of chemical composition. Ag-Al thin films with large continuous composition gradients (6-60 atom % Al) were deposited by a custom-designed combinatorial magnetron sputtering system. X-ray diffraction (XRD), energy dispersive X-ray spectroscopy (EDX), scanning and transmission electron microscopy (SEM and TEM), X-ray photoelectron spectroscopy (XPS), nanoindentation, and four-point electrical resistance screening were employed to characterize the chemical composition, structure, and physical properties of the films in a time-efficient way. For low Al contents (<13 atom %), a highly (111)-textured fcc phase was formed. At higher Al contents, a (002)-textured hcp solid solution phase was formed followed by a fcc phase in the most Al-rich regions. No indication of a μ phase was observed. The Ag-Al films with fcc-Ag matrix is prone to adhesive material transfer leading to a high friction coefficient (>1) and adhesive wear, similar to the behavior of pure Ag. In contrast, the hexagonal solid solution phase (from ca. 15 atom %Al) exhibited dramatically reduced friction coefficients (about 15% of that of the fcc phase) and dramatically reduced adhesive wear when tested against the pure Ag counter surface. The increase in contact resistance of the Ag-Al films is limited to only 50% higher than a pure Ag reference sample at the low friction and low wear region (19-27 atom %). This suggests that a hcp Ag-Al alloy can have a potential use in sliding electrical contact applications and in the future will replace pure Ag in specific electromechanical applications.

Passivation Effect of Atomic Layer Deposition of Al2O3 Film on HgCdTe Infrared Detectors

NASA Astrophysics Data System (ADS)

Zhang, Peng; Ye, Zhen-Hua; Sun, Chang-Hong; Chen, Yi-Yu; Zhang, Tian-Ning; Chen, Xin; Lin, Chun; Ding, Ring-Jun; He, Li

2016-09-01

The passivation effect of atomic layer deposition of (ALD) Al2O3 film on a HgCdTe infrared detector was investigated in this work. The passivation effect of Al2O3 film was evaluated by measuring the minority carrier lifetime, capacitance versus voltage ( C- V) characteristics of metal-insulator-semiconductor devices, and resistance versus voltage ( R- V) characteristics of variable-area photodiodes. The minority carrier lifetime, C- V characteristics, and R- V characteristics of HgCdTe devices passivated by ALD Al2O3 film was comparable to those of HgCdTe devices passivated by e-beam evaporation of ZnS/CdTe film. However, the baking stability of devices passivated by Al2O3 film is inferior to that of devices passivated by ZnS/CdTe film. In future work, by optimizing the ALD Al2O3 film growing process and annealing conditions, it may be feasible to achieve both excellent electrical properties and good baking stability.

Electro-acoustic sensors based on AlN thin film: possibilities and limitations

NASA Astrophysics Data System (ADS)

Wingqvist, Gunilla

2011-06-01

The non-ferroelectric polar wurtzite aluminium nitride (AlN) material has been shown to have potential for various sensor applications both utilizing the piezoelectric effect directly for pressure sensors or indirectly for acoustic sensing of various physical, chemical and biochemical sensor applications. Especially, sputter deposited AlN thin films have played a central role for successful development of the thin film electro-acoustic technology. The development has been primarily driven by one device - the thin film bulk acoustic resonator (FBAR or TFBAR), with its primary use for high frequency filter applications for the telecom industry. AlN has been the dominating choice for commercial application due to compatibility with the integrated circuit technology, low acoustic and dielectric losses, high acoustic velocity in combination with comparably high (but still for some applications limited) electromechanical coupling. Recently, increased piezoelectric properties (and also electromechanical coupling) in the AlN through the alloying with scandium nitride (ScN) have been identified both experimentally and theoretically. Inhere, the utilization of piezoelectricity in electro-acoustic sensing will be discussed together with expectation on acoustic FBAR sensor performance with variation in piezoelectric material properties in the parameter space around AlN due to alloying, in view of the ScxAl1-xN (0

Structural and optical properties of MgxAl1-xHy gradient thin films: a combinatorial approach

NASA Astrophysics Data System (ADS)

Gremaud, R.; Borgschulte, A.; Chacon, C.; van Mechelen, J. L. M.; Schreuders, H.; Züttel, A.; Hjörvarsson, B.; Dam, B.; Griessen, R.

2006-07-01

The structural, optical and dc electrical properties of MgxAl1-x (0.2≤x≤0.9) gradient thin films covered with Pd/Mg are investigated before and after exposure to hydrogen. We use hydrogenography, a novel high-throughput optical technique, to map simultaneously all the hydride forming compositions and the kinetics thereof in the gradient thin film. Metallic Mg in the MgxAl1-x layer undergoes a metal-to-semiconductor transition and MgH2 is formed for all Mg fractions x investigated. The presence of an amorphous Mg-Al phase in the thin film phase diagram enhances strongly the kinetics of hydrogenation. In the Al-rich part of the film, a complex H-induced segregation of MgH2 and Al occurs. This uncommon large-scale segregation is evidenced by metal and hydrogen profiling using Rutherford backscattering spectrometry and resonant nuclear analysis based on the reaction 1H(15N,αγ)12C. Besides MgH2, an additional semiconducting phase is found by electrical conductivity measurements around an atomic [Al]/[Mg] ratio of 2 (x=0.33). This suggests that the film is partially transformed into Mg(AlH4)2 at around this composition.

Time-dependent dielectric breakdown of atomic-layer-deposited Al2O3 films on GaN

NASA Astrophysics Data System (ADS)

Hiraiwa, Atsushi; Sasaki, Toshio; Okubo, Satoshi; Horikawa, Kiyotaka; Kawarada, Hiroshi

2018-04-01

Atomic-layer-deposited (ALD) Al2O3 films are the most promising surface passivation and gate insulation layers in non-Si semiconductor devices. Here, we carried out an extensive study on the time-dependent dielectric breakdown characteristics of ALD-Al2O3 films formed on homo-epitaxial GaN substrates using two different oxidants at two different ALD temperatures. The breakdown times were approximated by Weibull distributions with average shape parameters of 8 or larger. These values are reasonably consistent with percolation theory predictions and are sufficiently large to neglect the wear-out lifetime distribution in assessing the long-term reliability of the Al2O3 films. The 63% lifetime of the Al2O3 films increases exponentially with a decreasing field, as observed in thermally grown SiO2 films at low fields. This exponential relationship disproves the correlation between the lifetime and the leakage current. Additionally, the lifetime decreases with measurement temperature with the most remarkable reduction observed in high-temperature (450 °C) O3-grown films. This result agrees with that from a previous study, thereby ruling out high-temperature O3 ALD as a gate insulation process. When compared at 200 °C under an equivalent SiO2 field of 4 MV/cm, which is a design guideline for thermal SiO2 on Si, high-temperature H2O-grown Al2O3 films have the longest lifetimes, uniquely achieving the reliability target of 20 years. However, this target is accomplished by a relatively narrow margin and, therefore, improvements in the lifetime are expected to be made, along with efforts to decrease the density of extrinsic Al2O3 defects, if any, to promote the practical use of ALD Al2O3 films.

Influence of hysteresis effect on properties of reactively sputtered TiAlSiN films

NASA Astrophysics Data System (ADS)

Gao, Fangyuan; Li, Guang; Xia, Yuan

2018-02-01

This article reports on the hysteresis effect in TiAlSiN films prepared by an intermediate frequency magnetron. The discharge voltages for different metallic alloy targets varying with nitrogen flow rate were systematically investigated, under a constant pressure provided by sputtering gas. The hysteresis transition was introduced by the sudden changes in sputtering rate, fraction of compound formation, phase composition and mechanical properties. The result was shown that: the initial growth rate aD in metallic mode was 4 times faster than that in supersaturated state. The optimized stoichiometric TiAl(Si)Nx=1 films containing 50 at.% N were founded in the transition region. The discussion on the plasma characteristics caused by hysteresis process showed that the TiN(111) texture could be increased by applying higher particle bombarding energy. The hardness of TiAlSiN film was strongly influenced by the orientation, which depended on the loading history of nitrogen. The superior TiAlSiN film with hardness 33 GPa could be prepared during the nitrogen unloading for same nitrogen flow rates.

Microstructure and property of diamond-like carbon films with Al and Cr co-doping deposited using a hybrid beams system

NASA Astrophysics Data System (ADS)

Dai, Wei; Liu, Jingmao; Geng, Dongsen; Guo, Peng; Zheng, Jun; Wang, Qimin

2016-12-01

DLC films with weak carbide former Al and carbide former Cr co-doping (Al:Cr-DLC) were deposited by a hybrid beams system comprising an anode-layer linear ion beam source (LIS) and high power impulse magnetron sputtering using a gas mixture of C2H2 and Ar as the precursor. The doped Al and Cr contents were controlled via adjusting the C2H2 fraction in the gas mixture. The composition, microstructure, compressive stress, mechanical properties and tribological behaviors of the Al:Cr-DLC films were researched carefully using X-ray photoelectron spectroscopy, transmission electron microscopy, Raman spectroscopy, stress-tester, nanoindentation and ball-on-plate tribometer as function of the C2H2 fraction. The results show that the Al and Cr contents in the films increased continuously as the C2H2 fraction decreased. The doped Cr atoms preferred to bond with the carbon while the Al atoms mainly existed in metallic state. Structure modulation with alternate multilayer consisted of Al-poor DLC layer and Al-rich DLC layer was found in the films. Those periodic Al-rich DLC layers can effectively release the residual stress of the films. On the other hand, the formation of the carbide component due to Cr incorporation can help to increase the film hardness. Accordingly, the residual stress of the DLC films can be reduced without sacrificing the film hardness though co-doping Al and Cr atoms. Furthermore, it was found that the periodic Al-rich layer can greatly improve the elastic resilience of the DLC films and thus decreases the film friction coefficient and wear rate significantly. However, the existence of the carbide component would cause abrasive wear and thus deteriorate the wear performance of the films.

Oblique angle deposition-induced anisotropy in Co2FeAl films

NASA Astrophysics Data System (ADS)

Zhou, W.; Brock, J.; Khan, M.; Eid, K. F.

2018-06-01

A series of Co2FeAl Heusler alloy films, fabricated on Si/SiO2 substrates by magnetron sputtering-oblique angle deposition technique, have been investigated by magnetization and transport measurements. The morphology and magnetic anisotropy of the films strongly depended on the deposition angle. While the film deposited at zero degree (i.e. normal incidence) did not show any anisotropy, the films deposited at higher angles showed unusually strong in-plane anisotropy that increased with deposition angle. The enhanced anisotropy was well-reflected in the direction-dependent magnetization and the coercivity of the films that increased dramatically from 30 Oe to 490 Oe. In a similar vein, the electrical resistivity of the films also increased drastically, especially for deposition angles larger than 60°. These anisotropic effects and their relation to the morphology of the films are discussed.

Anomalous Hall conductivity and electronic structures of Si-substituted Mn2CoAl epitaxial films

NASA Astrophysics Data System (ADS)

Arima, K.; Kuroda, F.; Yamada, S.; Fukushima, T.; Oguchi, T.; Hamaya, K.

2018-02-01

We study anomalous Hall conductivity (σAHC) and electronic band structures of Si-substituted Mn2CoAl (Mn2CoAl1 -xSix ). First-principles calculations reveal that the electronic band structure is like a spin-gapless system even after substituting a quaternary element of Si for Al up to x =0.2 in Mn2CoAl1 -xSix . This means that the Si substitution enables the Fermi-level shift without largely changing the electronic structures in Mn2CoAl . By using molecular beam epitaxy techniques, Mn2CoAl1 -xSix epitaxial films can be grown, leading to the systematic control of x (0 ⩽x ⩽0.3 ). In addition to the electrical conductivity, the values of σAHC for the Mn2CoAl1 -xSix films are similar to those in Mn2CoAl films shown in previous reports. We note that a very small σAHC of ˜1.1 S/cm is obtained for x = 0.225, and the sign of σAHC is changed from positive to negative at around x = 0.25. We discuss the origin of the sign reversal of σAHC as a consequence of the Fermi-level shift in Mn2CoAl . Considering the presence of the structural disorder in the Mn2CoAl1 -xSix films, we can conclude that the small value and sign reversal of σAHC are not related to the characteristics of spin-gapless semiconductors.

Exploration of Al-Doped ZnO in Photovoltaic Thin Films

NASA Astrophysics Data System (ADS)

Ciccarino, Christopher; Sahiner, M. Alper

The electrical properties of Al doped ZnO-based thin films represent a potential advancement in the push for increasing solar cell efficiency. Doping with Aluminum will theoretically decrease resistivity of the film and therefore achieve this potential as a viable option in the P-N junction phase of photovoltaic cells. The n-type semi-conductive characteristics of the ZnO layer will theoretically be optimized with the addition of Aluminum carriers. In this study, Aluminum doping concentrations ranging from 1-3% by mass were produced, analyzed, and compared. Films were developed onto ITO coated glass using the Pulsed Laser Deposition technique. Target thickness was 250 nm and ellipsometry measurements showed uniformity and accuracy in this regard. Active dopant concentrations were determined using Hall Effect measurements. Efficiency measurements showed possible applications of this doped compound, with upwards of 7% efficiency measured, using a Keithley 2602 SourceMeter set-up. XRD scans showed highly crystalline structures, with effective Al intertwining of the hexagonal wurtzile ZnO molecular structure. This alone indicates a promising future of collaboration between these two materials.

Growth of crack-free GaN films on Si(111) substrate by using Al-rich AlN buffer layer

NASA Astrophysics Data System (ADS)

Lu, Yuan; Cong, Guangwei; Liu, Xianglin; Lu, Da-Cheng; Zhu, Qinsheng; Wang, Xiaohui; Wu, Jiejun; Wang, Zhanguo

2004-11-01

GaN epilayers were grown on Si(111) substrate by metalorganic chemical vapor deposition. By using the Al-rich AlN buffer which contains Al beyond stoichiometry, crack-free GaN epilayers with 1 μm thickness were obtained. Through x-ray diffraction (XRD) and secondary ion mass spectroscopy analyses, it was found that a lot of Al atoms have diffused into the under part of the GaN epilayer from the Al-rich AlN buffer, which results in the formation of an AlxGa1-xN layer at least with 300 nm thickness in the 1 μm thick GaN epilayer. The Al fraction x was estimated by XRD to be about 2.5%. X-ray photoelectron spectroscopy depth analysis was also applied to investigate the stoichiometry in the Al-rich buffer before GaN growth. It is suggested that the underlayer AlxGa1-xN originated from Al diffusion probably provides a compressive stress to the upper part of the GaN epilayer, which counterbalances a part of tensile stress in the GaN epilayer during cooling down and consequently reduces the cracks of the film effectively. The method using the Al diffusion effect to form a thick AlGaN layer is really feasible to achieve the crack-free GaN films and obtain a high crystal quality simultaneously.

Characterization of MgO/Al2O3 Composite Film Prepared by DC Magnetron Sputtering and Its Secondary Electron Emission Properties

NASA Astrophysics Data System (ADS)

Wang, Feifei; Zhou, Fan; Wang, Jinshu; Liu, Wei; Zhang, Quan; Yin, Qiao

2018-07-01

Magnesium oxide (MgO) and MgO/Al2O3 composite thin films were prepared on silver substrates by DC magnetron sputtering technique and their secondary electron yields ( δ) and working durability under constant electron bombardment were investigated. X-ray photoelectron spectroscopy and Auger electron spectroscopy analyses reveal that uniform MgO/Al2O3 composite films were developed and residual Al exists in the films after sputtering of the Mg-Al alloy in an Ar-O2 mixed atmosphere on silver substrates heated at 400°C. The MgO/Al2O3 composite films show superior δ as high as 11.6 and much better resistance to electron bombardment than that of pure MgO films. Good secondary electron emission (SEE) properties of the MgO/Al2O3 film are probably due to the presence of alumina in the film, which has higher bond dissociation energy than MgO, as well as the presence of residual Al in the film, which contributes to effective electron transport in the film and diminished surface charging during SEE. With superior SEE performance, MgO/Al2O3 films have potential for practical electron multipliers in various vacuum electron devices.

Influence of metallic surface states on electron affinity of epitaxial AlN films

NASA Astrophysics Data System (ADS)

Mishra, Monu; Krishna, Shibin; Aggarwal, Neha; Gupta, Govind

2017-06-01

The present article investigates surface metallic states induced alteration in the electron affinity of epitaxial AlN films. AlN films grown by plasma-assisted molecular beam epitaxy system with (30% and 16%) and without metallic aluminium on the surface were probed via photoemission spectroscopic measurements. An in-depth analysis exploring the influence of metallic aluminium and native oxide on the electronic structure of the films is performed. It was observed that the metallic states pinned the Fermi Level (FL) near valence band edge and lead to the reduction of electron affinity (EA). These metallic states initiated charge transfer and induced changes in surface and interface dipoles strength. Therefore, the EA of the films varied between 0.6-1.0 eV due to the variation in contribution of metallic states and native oxide. However, the surface barrier height (SBH) increased (4.2-3.5 eV) adversely due to the availability of donor-like surface states in metallic aluminium rich films.

Structural and optical properties of low temperature grown AlN films on sapphire using helicon sputtering system

DOE Office of Scientific and Technical Information (OSTI.GOV)

Chen, Meei-Ru; Chen, Hou-Guang; Kao, Hui-Ling, E-mail: hlkao@cycu.edu.tw

2015-05-15

AlN thin films have been deposited directly on c-plane sapphire substrates at low temperatures by a helicon sputtering system. The structural quality of AlN epitaxial films was characterized by x-ray diffractometry and transmission electron microscopy. The films exhibit smooth surface with root-mean-square roughness as small as 0.7 nm evaluated by atomic force microscope. The optical transmittance spectra show a steep absorption edge at the wavelength of 200 nm and a high transmittance of over 80% in the visible range. The band-edge transition (6.30 eV) of AlN film was observed in the cathodoluminescence spectrum recorded at 11 K. The spectral response of metal–semiconductor–metal photodetectors constructedmore » with AlN/sapphire reveals the peak responsivity at 200 nm and a UV/visible rejection ratio of about two orders of magnitude. The results of this low temperature deposition suggest the feasibility of the epitaxial growth of AlN on sapphire substrates and the incorporation of the AlN films in the surface acoustic wave devices and the optical devices at deep ultraviolet region.« less

Electrical characterization of amorphous Al2O3 dielectric films on n-type 4H-SiC

NASA Astrophysics Data System (ADS)

Khosa, R. Y.; Thorsteinsson, E. B.; Winters, M.; Rorsman, N.; Karhu, R.; Hassan, J.; Sveinbjörnsson, E. Ö.

2018-02-01

We report on the electrical properties of Al2O3 films grown on 4H-SiC by successive thermal oxidation of thin Al layers at low temperatures (200°C - 300°C). MOS capacitors made using these films contain lower density of interface traps, are more immune to electron injection and exhibit higher breakdown field (5MV/cm) than Al2O3 films grown by atomic layer deposition (ALD) or rapid thermal processing (RTP). Furthermore, the interface state density is significantly lower than in MOS capacitors with nitrided thermal silicon dioxide, grown in N2O, serving as the gate dielectric. Deposition of an additional SiO2 film on the top of the Al2O3 layer increases the breakdown voltage of the MOS capacitors while maintaining low density of interface traps. We examine the origin of negative charges frequently encountered in Al2O3 films grown on SiC and find that these charges consist of trapped electrons which can be released from the Al2O3 layer by depletion bias stress and ultraviolet light exposure. This electron trapping needs to be reduced if Al2O3 is to be used as a gate dielectric in SiC MOS technology.

Structural and interfacial defects in c-axis oriented LiNbO3 thin films grown by pulsed laser deposition on Si using Al : ZnO conducting layer

NASA Astrophysics Data System (ADS)

Shandilya, Swati; Tomar, Monika; Sreenivas, K.; Gupta, Vinay

2009-05-01

Highly c-axis oriented LiNbO3 films are deposited using pulsed laser deposition on a silicon substrate using a transparent conducting Al doped ZnO layer. X-ray diffraction and Raman spectroscopic analysis show the fabrication of single phase and oriented LiNbO3 films under the optimized deposition condition. An extra peak at 905 cm-1 was observed in the Raman spectra of LiNbO3 film deposited at higher substrate temperature and higher oxygen pressure, and attributed to the presence of niobium antisite defects in the lattice. Dielectric constant and ac conductivity of oriented LiNbO3 films deposited under the static and rotating substrate modes have been studied. Films deposited under the rotating substrate mode exhibit dielectric properties close to the LiNbO3 single crystal. The cause of deviation in the dielectric properties of the film deposited under the static substrate mode, in comparison with the bulk, are discussed in the light of the possible formation of an interdiffusion layer at the interface of the LiNbO3 film and the Al : ZnO layer.

Characterization of conductive Al-doped ZnO thin films for plasmonic applications

NASA Astrophysics Data System (ADS)

Masouleh, F. F.; Sinno, I.; Buckley, R. G.; Gouws, G.; Moore, C. P.

2018-02-01

Highly conductive and transparent Al-doped zinc oxide films were produced by RF magnetron sputtering for plasmonic applications in the infrared region of the spectrum. These films were characterized using Fourier transform infrared spectroscopy, the Hall effect, Rutherford backscattering spectroscopy and spectral data analysis. Analysis of the results shows a carrier concentration of up to 2.6 × 1020 cm-3, as well as transmission over 80% near the plasma frequency where plasmonic properties are expected. The plasma frequency was calculated from the spectroscopy measurements and subsequent data analysis, and was in agreement with the results from the Hall effect measurements and the free electron gas (Drude) model. Based on these results, the Al-doped zinc oxide thin films are well-suited for plasmonic applications in the infrared region.

Electric-field control of magnetic properties for α-Fe2O3/Al2O3 films

NASA Astrophysics Data System (ADS)

Cheng, Bin; Qin, Hongwei; Liu, Liang; Xie, Jihao; Zhou, Guangjun; Chen, Lubin; Hu, Jifan

2018-06-01

α-Fe2O3/Al2O3 films can exhibit weak ferromagnetism at room temperature. The saturation magnetization of the thinner film is larger than that of the thick one deposited at the same temperature of 500 °C, which implies that the weak ferromagnetism at room temperature comes not only from the intrinsic canted magnetic structure, but also from the effects of interface between α-Fe2O3/Al2O3, such as the effect of Al diffusion into α-Fe2O3 film. Perpendicular electric field upon α-Fe2O3/Al2O3 film at room temperature could adjust the magnetic properties (saturation magnetization, magnetic remanence, coercivity and saturation magnetizing field). The positive electric field can enhance the magnetism of α-Fe2O3/Al2O3 thin film, while negative electric field can reduce it. The change induced by electric field may be connected with the migration effects of Al3+ ions. The steps of curve for saturation magnetization versus the electric field may reflect these complicated processes. The magnetization of the film deposited at a higher temperature can be changed by electric field more easily. This study may inspire more in-depth research and lead to an alternative approach to future magneto-electronic devices.

An investigation of GaN thin films on AlN on sapphire substrate by sol-gel spin coating method

NASA Astrophysics Data System (ADS)

Amin, Nur Fahana Mohd; Ng, Sha Shiong

2017-12-01

In this research, the gallium nitride (GaN) thin films were deposited on aluminium nitride on sapphire (AlN/Al2O3) substrate by sol-gel spin coating method. Simple ethanol-based precursor with the addition of diethanolamine solution was used. The structural and morphology properties of synthesized GaN thin films were characterized by using X-ray Diffraction, Field-Emission Scanning Electron Microscopy and Atomic Force Microscopy. While the elemental compositions and the lattice vibrational properties of the films were investigated by means of the Energy Dispersive X-ray spectroscopy and Raman spectroscopy. All the results revealed that the wurtzite structure GaN thin films with GaN(002) preferred orientation and smooth surface morphology were successfully grown on AlN/Al2O3 substrate by using inexpensive and simplified sol-gel spin coating technique. The sol-gel spin coated GaN thin film with lowest oxygen content was also achieved.FESEM images show that GaN thin films with uniform and packed grains were formed. Based on the obtained results, it can be concluded that wurtzite structure GaN thin films were successfully deposited on AlN/Al2O3 substrate.

Influence of Post-Heat Treatment of ZnO:Al Transparent Electrode for Copper Indium Gallium Selenide Thin Film Solar Cell.

PubMed

Eom, Taewoo; Park, Jeong Eun; Park, Sang Yong; Park, Jeong Hoon; Bweupe, Jackson; Lim, Donggun

2018-09-01

Copper indium gallium selenide (CIGS) thin film solar cells have been regarded as a candidate for energy conversion devices owing to their high absorption coefficient, high temperature stability, and low cost. ZnO:Al thin film is commonly used in CIGS solar cells as a window layer. In this study, ZnO:Al films were deposited on glass under various post-heat temperature using RF sputtering to observe the characteristics of ZnO:Al films such as Hall mobility, carrier concentration, and resistivity; subsequently, the ZnO:Al films were applied to a CIGS solar cell as a window. CIGS solar cells fabricated with various ZnO:Al films were analyzed in order to investigate their influence. The test results showed that the improvement of ZnO:Al characteristics affects Jsc and Voc in the solar cell through reduced recombination and increase of optical property.

Thermal stability of atomic layer deposition Al2O3 film on HgCdTe

NASA Astrophysics Data System (ADS)

Zhang, P.; Sun, C. H.; Zhang, Y.; Chen, X.; He, K.; Chen, Y. Y.; Ye, Z. H.

2015-06-01

Thermal stability of Atomic Layer Deposition Al2O3 film on HgCdTe was investigated by Al2O3 film post-deposition annealing treatment and Metal-Insulator-Semiconductor device low-temperature baking treatment. The effectiveness of Al2O3 film was evaluated by measuring the minority carrier lifetime and capacitance versus voltage characteristics. After annealing treatment, the minority carrier lifetime of the HgCdTe sample presented a slight decrease. Furthermore, the fixed charge density and the slow charge density decreased significantly in the annealed MIS device. After baking treatment, the fixed charge density and the slow charge density of the unannealed and annealed MIS devices decreased and increased, respectively.

Three dimensional-stacked complementary thin-film transistors using n-type Al:ZnO and p-type NiO thin-film transistors.

PubMed

Lee, Ching-Ting; Chen, Chia-Chi; Lee, Hsin-Ying

2018-03-05

The three dimensional inverters were fabricated using novel complementary structure of stacked bottom n-type aluminum-doped zinc oxide (Al:ZnO) thin-film transistor and top p-type nickel oxide (NiO) thin-film transistor. When the inverter operated at the direct voltage (V DD ) of 10 V and the input voltage from 0 V to 10 V, the obtained high performances included the output swing of 9.9 V, the high noise margin of 2.7 V, and the low noise margin of 2.2 V. Furthermore, the high performances of unskenwed inverter were demonstrated by using the novel complementary structure of the stacked n-type Al:ZnO thin-film transistor and p-type nickel oxide (NiO) thin-film transistor.

Mid-Infrared Spectroscopy Platform Based on GaAs/AlGaAs Thin-Film Waveguides and Quantum Cascade Lasers.

PubMed

Sieger, Markus; Haas, Julian; Jetter, Michael; Michler, Peter; Godejohann, Matthias; Mizaikoff, Boris

2016-03-01

The performance and versatility of GaAs/AlGaAs thin-film waveguide technology in combination with quantum cascade lasers for mid-infrared spectroscopy in comparison to conventional FTIR spectroscopy is presented. Infrared radiation is provided by a quantum cascade laser (QCL) spectrometer comprising four tunable QCLs providing a wavelength range of 5-11 μm (1925-885 cm(-1)) within a single collimated beam. Epitaxially grown GaAs slab waveguides serve as optical transducer for tailored evanescent field absorption analysis. A modular waveguide mounting accessory specifically designed for on-chip thin-film GaAs waveguides is presented serving as a flexible analytical platform in lieu of conventional attenuated total reflection (ATR) crystals uniquely facilitating macroscopic handling and alignment of such microscopic waveguide structures in real-world application scenarios.

ZnO:Al Thin Film Gas Sensor for Detection of Ethanol Vapor

PubMed Central

Chou, Shih Min; Teoh, Lay Gaik; Lai, Wei Hao; Su, Yen Hsun; Hon, Min Hsiung

2006-01-01

The ZnO:Al thin films were prepared by RF magnetron sputtering on Si substrate using Pt as interdigitated electrodes. The structure was characterized by XRD and SEM analyses, and the ethanol vapor gas sensing as well as electrical properties have been investigated and discussed. The gas sensing results show that the sensitivity for detecting 400 ppm ethanol vapor was ∼20 at an operating temperature of 250°C. The high sensitivity, fast recovery, and reliability suggest that ZnO:Al thin film prepared by RF magnetron sputtering can be used for ethanol vapor gas sensing.

Optical response tuning in nanorod-on-semicontinous film systems: A computational study

NASA Astrophysics Data System (ADS)

Mokkath, Junais Habeeb

2018-01-01

Strongly confined and intense optical fields within the plasmonic metal nanocavities show outstanding potential for a wide range of functionalities in nanophotonics. Using time dependent density functional theory calculations, we investigate the optical response evolution as a function of the gap separation distances in nanorod-on-film systems comprised of a nanorod (NR) made of Al or Na on top of an Al film. Huge optical field modulations emerged in the chemically distinct Na NR - Al film system in comparison to the Al NR - Al film system, indicating the vital role of metals involved. We further study the optical response modifications by placing a conducting molecule in the gap region, finding strong spectral modulations via through-molecule electron tunneling.

Nanometre-scale 3D defects in Cr2AlC thin films.

PubMed

Chen, Y T; Music, D; Shang, L; Mayer, J; Schneider, J M

2017-04-20

MAX-phase Cr 2 AlC containing thin films were synthesized by magnetron sputtering in an industrial system. Nanometre-scale 3D defects are observed near the boundary between regions of Cr 2 AlC and of the disordered solid solution (CrAl) x C y . Shrinkage of the Cr-Cr interplanar distance and elongation of the Cr-Al distance in the vicinity of the defects are detected using transmission electron microscopy. The here observed deformation surrounding the defects was described using density functional theory by comparing the DOS of bulk Cr 2 AlC with the DOS of a strained and unstrained Cr 2 AlC(0001) surface. From the partial density of states analysis, it can be learned that Cr-C bonds are stronger than Cr-Al bonds in bulk Cr 2 AlC. Upon Cr 2 AlC(0001) surface formation, both bonds are weakened. While the Cr-C bonds recover their bulk strength as Cr 2 AlC(0001) is strained, the Cr-Al bonds experience only a partial recovery, still being weaker than their bulk counterparts. Hence, the strain induced bond strengthening in Cr 2 AlC(0001) is larger for Cr d - C p bonds than for Cr d - Al p bonds. The here observed changes in bonding due to the formation of a strained surface are consistent with the experimentally observed elongation of the Cr-Al distance in the vicinity of nm-scale 3D defects in Cr 2 AlC thin films.

Growth mechanism of Al2O3 film on an organic layer in plasma-enhanced atomic layer deposition

NASA Astrophysics Data System (ADS)

Lee, J. Y.; Kim, D. W.; Kang, W. S.; Lee, J. O.; Hur, M.; Han, S. H.

2018-01-01

Differences in the physical and chemical properties of Al2O3 films on a Si wafer and a C x H y layer were investigated in the case of plasma-enhanced atomic layer deposition. The Al2O3 film on the Si had a sharper interface and lower thickness than the Al2O3 film on the C x H y . The amount of carbon-impurity near the interface was larger for Al2O3 on the C x H y than for Al2O3 on the Si. In order to understand these differences, the concentrations of Al, O, C, and Si atoms through the Al2O3 films were evaluated by using x-ray photoelectron spectroscopy (XPS) depth profiling. The emission intensities of CO molecule were analyzed for different numbers of deposition cycles, by using time-resolved optical emission spectroscopy (OES). Finally, a growth mechanism for Al2O3 on an organic layer was proposed, based on the XPS and OES results for the Si wafer and the C x H y layer.

Indium hexagonal island as seed-layer to boost a-axis orientation of AlN thin films

NASA Astrophysics Data System (ADS)

Redjdal, N.; Salah, H.; Azzaz, M.; Menari, H.; Manseri, A.; Guedouar, B.; Garcia-Sanchez, A.; Chérif, S. M.

2018-06-01

Highly a-axis oriented aluminum nitride films have been grown on Indium coated (100) Si substrate by DC reactive magnetron sputtering. It is shown that In incorporated layer improve the extent of preferential growth along (100) axis and form dense AlN films with uniform surface and large grains, devoid of micro-cracks. As revealed by SEM cross section images, AlN structure consists of oriented columnar grains perpendicular to the Si surface, while AlN/In structure results in uniformely tilted column. SEM images also revealed the presence of In hexagonal islands persistent throughout the entire growth. Micro -Raman spectroscopy of the surface and the cross section of the AlN/In grown films evidenced their high degree of homogeneity and cristallinity.

Zinc interstitial threshold in Al-doped ZnO film: Effect on microstructure and optoelectronic properties

NASA Astrophysics Data System (ADS)

Singh, Chetan C.; Panda, Emila

2018-04-01

In order to know the threshold quantity of the zinc interstitials that contributes to an increase in carrier concentration in the Al-doped ZnO (AZO) films and their effect on the overall microstructure and optoelectronic properties of these films, in this work, Zn-rich-AZO and ZnO thin films are fabricated by adding excess zinc (from a zinc metallic target) during their deposition in RF magnetron sputtering and are then investigated using a wide range of experimental techniques. All these films are found to grow in a ZnO hexagonal wurtzite crystal structure with strong (002) orientation of the crystallites, with no indication of Al2O3, metallic Zn, and Al. The excessively introduced zinc in these AZO and/or ZnO films is found to increase the shallow donor level defects (i.e., zinc interstitials and oxygen-related electronic defect states), which is found to significantly increase the carrier concentration in these films. Additionally, aluminum is seen to enhance the creation of these electronic defect states in these films, thereby contributing more to the overall carrier concentration of these films. However, carrier mobility is found to decrease when the carrier concentration values are higher than 4 × 1020 cm-3, because of the electron-electron scattering. Whereas the optical band gap of the ZnO films is found to increase with increasing carrier concentration because of the Burstein-Moss shift, these decrease for the AZO films due to the band gap narrowing effect caused by excess carrier concentration.

High crystalline CuAlS2 thin films via chemical spray pyrolysis route

NASA Astrophysics Data System (ADS)

Naveena, D.; Logu, T.; Sethuraman, K.; Bose, A. Chandra

2018-04-01

High crystalline and non-toxic CuAlS2 thin films were successfully deposited on glass substrate by chemical spray pyrolysis method. The as-prepared sample was subjected to the sulphurization at 450 °C for 30 min. The structural, morphological, optical and electrical properties of the as deposited and sulphurized films have been systematically analyzed. XRD result shows that the sulphurized sample exhibited tetragonal crystal structure with increase in crystallite size. The optical band gap was found to decrease from 3.25 eV to 3.21 eV and the carrier concentration is 4.22×1015cm-3 for the as-deposited film which rises to 6.29×1015cm-3 after sulphurizing the film in nitrogen atmosphere. The results of this study provide a framework for fabricating an optimized high crystalline CuAlS2 layer in optoelectronic devices.

Electronic state of Er in sputtered AlN:Er films determined by magnetic measurements

DOE Office of Scientific and Technical Information (OSTI.GOV)

Narang, V.; Seehra, M. S., E-mail: mseehra@wvu.edu; Korakakis, D.

2014-12-07

The optoelectronic and piezoelectric properties of AlN:Er thin films have been of great recent interest for potential device applications. In this work, the focus is on the electronic state of Er in AlN:Er thin films prepared by reactive magnetron sputtering on (001) p-type Si substrate. X-ray diffraction shows that Er doping expands the lattice and the AlN:Er film has preferential c-plane orientation. To determine whether Er in AlN:Er is present as Er metal, Er{sub 2}O{sub 3}, or Er{sup 3+} substituting for Al{sup 3+}, detailed measurements and analysis of the temperature dependence (2 K–300 K) of the magnetization M at a fixed magneticmore » field H along with the M vs. H data at 2 K up to H = 90 kOe are presented. The presence of Er{sub 2}O{sub 3} and Er metal is ruled out since their characteristic magnetic transitions are not observed in the AlN:Er sample. Instead, the observed M vs. T and M vs. H variations are consistent with Er present as Er{sup 3+} substituting for Al{sup 3+} in AlN:Er at a concentration x = 1.08% in agreement with x = 0.94% ± 0.20% determined using x-ray photoelectron spectroscopy (XPS). The larger size of Er{sup 3+} vs. Al{sup 3+}explains the observed lattice expansion of AlN:Er.« less

Insitu grown superhydrophobic Zn-Al layered double hydroxides films on magnesium alloy to improve corrosion properties

NASA Astrophysics Data System (ADS)

Zhou, Meng; Pang, Xiaolu; Wei, Liang; Gao, Kewei

2015-05-01

A hierarchical superhydrophobic zinc-aluminum layered double hydroxides (Zn-Al LDHs) film has been fabricated on a magnesium alloy substrate via a facile hydrothermal crystallization method following chemical modification. The characteristics of the films were investigated by X-ray diffraction (XRD), scanning electronic microscope (SEM), and energy dispersive spectroscopy (EDS). XRD patterns and SEM images showed that the micro/nanoscale hierarchical LDHs film surfaces composed of ZnO nanorods and Zn-Al LDHs nanowalls structures. The static contact angle (CA) for the prepared surfaces was observed at around 165.6°. The corrosion resistance of the superhydrophobic films was estimated by electrochemical impedance spectroscopy (EIS) and potentiondynamic polarization measurement. EIS and polarization measurements revealed that the superhydrophobic Zn-Al LDHs coated magnesium alloy had better corrosion resistance in neutral 3.5 wt.% NaCl solution.

Strong temperature-dependent crystallization, phase transition, optical and electrical characteristics of p-type CuAlO2 thin films.

PubMed

Liu, Suilin; Wu, Zhiheng; Zhang, Yake; Yao, Zhiqiang; Fan, Jiajie; Zhang, Yiqiang; Hu, Junhua; Zhang, Peng; Shao, Guosheng

2015-01-07

We report here a reliable and reproducible single-step (without post-annealing) fabrication of phase-pure p-type rhombohedral CuAlO2 (r-CuAlO2) thin films by reactive magnetron sputtering. The dependence of crystallinity and phase compositions of the films on the growth temperature was investigated, revealing that highly-crystallized r-CuAlO2 thin films could be in situ grown in a narrow temperature window of ∼940 °C. Optical and electrical property studies demonstrate that (i) the films are transparent in the visible light region, and the bandgaps of the films increased to ∼3.86 eV with the improvement of crystallinity; (ii) the conductance increased by four orders of magnitude as the film was evolved from the amorphous-like to crystalline structure. The predominant role of crystallinity in determining CuAlO2 film properties was demonstrated to be due to the heavy anisotropic characteristics of the O 2p-Cu 3d hybridized valence orbitals.

Heavy Mg-doping of (Al,Ga)N films for potential applications in deep ultraviolet light-emitting structures

NASA Astrophysics Data System (ADS)

Liang, Y. H.; Towe, E.

2018-03-01

Doping of high aluminum-containing (Al,Ga)N thin films has remained a challenging problem that has hindered progress in the development of deep ultraviolet light-emitters. This paper reports on the synthesis and use of heavily doped (Al,Ga)N films in deep ultraviolet (˜274 nm) light-emitting structures; these structures were synthesized by molecular beam epitaxy under liquid-metal growth conditions that facilitate the incorporation of extremely high density of Mg dopant impurities (up to 5 × 1019 cm-3) into aluminum-rich (Al,Ga)N thin films. Prototypical light-emitting diode structures incorporating Al0.7Ga0.3N films doped with Mg impurities that ionize to give free hole carrier concentrations of up to 6 × 1017 cm-3 exhibit external quantum efficiencies of up 0.56%; this is an improvement from previous devices made from molecular beam epitaxy-grown materials. This improvement is believed to be due to the high hole carrier concentration enabled by the relatively low activation energy of 220 meV compared to the expected values of 408-507 meV for Al0.7Ga0.3N films.

Fabrication and kinetics study of nano-Al/NiO thermite film by electrophoretic deposition.

PubMed

Zhang, Daixiong; Li, Xueming

2015-05-21

Nano-Al/NiO thermites were successfully prepared as film by electrophoretic deposition (EPD). For the key issue of this EPD, a mixture solvent of ethanol-acetylacetone (1:1 in volume) containing 0.00025 M nitric acid was proved to be a suitable dispersion system for EPD. The kinetics of electrophoretic deposition for both nano-Al and nano-NiO were investigated; the linear relation between deposition weight and deposition time in short time and parabolic relation in prolonged time were observed in both EPDs. The critical transition time between linear deposition kinetics and parabolic deposition kinetics for nano-Al and nano-NiO were 20 and 10 min, respectively. The theoretical calculation of the kinetics of electrophoretic deposition revealed that the equivalence ratio of nano-Al/NiO thermites film would be affected by the behavior of electrophoretic deposition for nano-Al and nano-NiO. The equivalence ratio remained steady when the linear deposition kinetics dominated for both nano-Al and nano-NiO. The equivalence ratio would change with deposition time when deposition kinetics for nano-NiO changed into parabolic kinetics dominated after 10 min. Therefore, the rule was suggested to be suitable for other EPD of bicomposites. We also studied thermodynamic properties of electrophoretic nano-Al/NiO thermites film as well as combustion performance.

Effect of post-annealing on the magnetic properties of sputtered Mn56Al44 thin films

NASA Astrophysics Data System (ADS)

Gupta, Nanhe Kumar; Husain, Sajid; Barwal, Vineet; Behera, Nilamani; Chaudhary, Sujeet

2018-05-01

Mn56Al44 (MnAl) thin films of constant thickness (˜30nm) were grown on naturally oxidized Si substrates using DC-magnetron sputtering. Effect of deposition parameters such as sputtering power, substrate temperature (Ts), and post-annealing temperature have been systematically invstigated. X-ray diffraction patterns revealed the presence of mixed phases, namely the τ- and β-MnAl. The highest saturation magnetization (MS) was found to be 65emu/cc using PPMS-VSM in film grown at Ts=500°C. The magnetic ordering was found to get significantly improved by performing post-annealing of these as-grwon at 400°C for 1 hr in the presence of out-of-plane magnetic field of ˜1500Oe in vacuum. In particular, at room temperature (RT), the MS got enhanced after magnetic annealing from 65emu/cc to 500 emu/cc in MnAl films grown at Ts=500°C. This sample exhibited a magneto-resistance of ˜1.5% at RT. The tuning of the structural and magnetic properties of MnAl binary alloy thin films as established here by varying the growth parameters is critical with regards to the prospective applications of MnAl, a metastable ferromagnetic system which possesses the highest perpendicular magnetic anisotropy at RT till date.

Infrared blocking, microwave and terahertz low-loss transmission AlN films grown on flexible polymeric substrates

NASA Astrophysics Data System (ADS)

Rudenko, E.; Tsybrii, Z.; Sizov, F.; Korotash, I.; Polotskiy, D.; Skoryk, M.; Vuichyk, M.; Svezhentsova, K.

2017-04-01

Aluminum nitride (AlN) film coatings on flexible substrates (polymeric Teflon, Mylar) have been obtained using a hybrid helicon-arc ion-plasma deposition technique with high adhesion of coatings. Studies of optical, morphological, and structural properties of AlN films have been carried out. It was found that AlN coatings on Teflon and Mylar thin-film substrates substantially suppress transmission of infrared (IR) radiation within the spectral range λ ˜ 5-20 μm at certain technological parameters and thickness of AlN. Transmission in THz regions by using quasioptics attains T ≈ 79%-95%, and losses measured in the channels within the microwave region 2 to 36 GHz are <0.06 dB. The obtained composite structures (AlN coatings on Teflon and Mylar thin-film substrates), due to a high thermal conductivity of AlN, could be used as efficient blocking structures in the infrared spectral range ("infrared stealth") withdrawing the heat from filters warmed by IR radiation. At the same time, they can be used as the transparent ones in the microwave and THz regions, which can be important for low-temperature detector components of navigation, positioning, and telecommunication systems due to reducing the background noise.

Synthesis and characterization of n-type NiO:Al thin films for fabrication of p-n NiO homojunctions

NASA Astrophysics Data System (ADS)

Sun, Hui; Liao, Ming-Han; Chen, Sheng-Chi; Li, Zhi-Yue; Lin, Po-Chun; Song, Shu-Mei

2018-03-01

n-type NiO:Al thin films were deposited by RF magnetron sputtering. Their optoelectronic properties versus Al target power was investigated. The results show that with increasing Al target power, the conduction type of NiO films changes from p-type to n-type. The variation of the film’s electrical and optical properties depends on Al amount in the film. When Al target power is relatively low, Al3+ cations tend to enter nickel vacancy sites, which makes the lattice structure of NiO more complete. This improves the carrier mobility and film’s transmittance. However, when Al target power exceeds 40 W, Al atoms begin to enter into interstitial sites and form an Al cluster in the NiO film. This behavior is beneficial for improving the film’s n-type conductivity but degrades the film’s transmittance. Finally, Al/(p-type NiO)/(n-type NiO:Al)/ITO homojunctions were fabricated. Their performance was compared with Al/(p-type NiO)/ITO heterojunctions without an n-type NiO layer. Thanks to the better interface quality between the two NiO layers, the homojunctions present better performance.

Structural, optical, and LED characteristics of ZnO and Al doped ZnO thin films

NASA Astrophysics Data System (ADS)

Sandeep, K. M.; Bhat, Shreesha; Dharmaprakash, S. M.

2017-05-01

ZnO (pristine) and Al doped ZnO (AZO) films were prepared using sol-gel spin coating method. The XRD analysis showed the enhanced compressive stress in AZO film. The presence of extended states below the conduction band edge in AZO accounts for the redshift in optical bandgap. The PL spectra of AZO showed significant blue emission due to the carrier recombination from defect states. The TRPL curves showed the dominant DAP recombination in ZnO film, whereas defect related recombination in Al doped ZnO film. Color parameters viz: the dominant wavelength, color coordinates (x,y), color purity, luminous efficiency and correlated color temperature (CCT) of ZnO and AZO films are calculated using 1931 (CIE) diagram. Further, a strong blue emission with color purity more than 96% is observed in both the films. The enhanced blue emission in AZO significantly increased the luminous efficiency (22.8%) compared to ZnO film (10.8%). The prepared films may be used as blue phosphors in white light generation.

Humidity sensing properties of Al-doped zinc oxide coating films

NASA Astrophysics Data System (ADS)

Saidi, S. A.; Mamat, M. H.; Ismail, A. S.; Malek, M. F.; Yusoff, M. M.; Sin, N. D. Md.; Zoolfakar, A. S.; Khusaimi, Z.; Rusop, M.

2018-05-01

Humidity sensor was fabricated using Al-doped zinc oxide (ZnO) coating films through spin-coating at room temperature. The sensing mechanism was discussed based on their nanostructures, such as surface area and porous nanostructures. Surface area and water adsorption are an important component in the low humidity, while at high humidity, porous nanostructures and capillary condensation become important. The results showed that the sensitivity of the Al-doped ZnO coating improved compared to that of the Al-doped ZnO nanorod arrays, with values of 7.38 at 40% to 90%RH (Relative humidity). All these results indicated that Al-doped ZnO coating had high potential for humidity-sensor applications.

Microstructure evolution and coercivity enhancement in Nd-Fe-B thin films diffusion-processed by R-Al alloys (R=Nd, Pr)

NASA Astrophysics Data System (ADS)

Xie, Yigao; Yang, Yang; Zhang, Tongbo; Fu, Yanqing; Jiang, Qingzheng; Ma, Shengcan; Zhong, Zhenchen; Cui, Weibin; Wang, Qiang

2018-05-01

Diffusion process by Nd-Al and Pr-Al alloys was compared and investigated in Nd-Fe-B thin films. Enhanced coercivity 2.06T and good squareness was obtained by using Pr85Al15 and Nd85Al15 alloys as diffusion sources. But the coercivity of diffusion-processed thin films by Pr70Al30 and Pr55Al45 alloys decreased to 2.04T and 1.82T. High ambient coercivity of 2.26T was achieved in diffusion-processed thin film by Nd70Al30 leading to an improved coercivity thermal stability because Nd2Fe14B grains were enveloped by Nd-rich phase as seen by transmission electron microscopy Nd-loss image. Meanwhile, microstructure-dependent parameters α and Neff were improved. However, high content of Al in diffusion-processed thin film by Nd55Al45 lead to degraded texture and coercivity.

Local Plasticity of Al Thin Films as Revealed by X-Ray Microdiffraction

NASA Astrophysics Data System (ADS)

Spolenak, R.; Brown, W. L.; Tamura, N.; MacDowell, A. A.; Celestre, R. S.; Padmore, H. A.; Valek, B.; Bravman, J. C.; Marieb, T.; Fujimoto, H.; Batterman, B. W.; Patel, J. R.

2003-03-01

Grain-to-grain interactions dominate the plasticity of Al thin films and establish effective length scales smaller than the grain size. We have measured large strain distributions and their changes under plastic strain in 1.5-μm-thick Al0.5%Cu films using a 0.8-μm-diameter white x-ray probe at the Advanced Light Source. Strain distributions arise not only from the distribution of grain sizes and orientation, but also from the differences in grain shape and from stress environment. Multiple active glide plane domains have been found within single grains. Large grains behave like multiple smaller grains even before a dislocation substructure can evolve.

Theoretical analysis of SAW propagation characteristics in (100) oriented AlN/diamond structure.

PubMed

Ro, Ruyen; Chiang, Yuan-Feng; Sung, Chia-Chi; Lee, Ruyue; Wu, Sean

2010-01-01

In this study, the finite element method is employed to calculate SAW characteristics in (100) AlN/diamond based structures with different electrical interfaces; i.e., IDT/ AlN/diamond, AlN/IDT/diamond, IDT/AlN/thin metal film/ diamond, and thin metal film/AlN/IDT/diamond. The effects of Cu and Al electrodes as well as the thickness of electrode on phase velocity, coupling coefficient, and reflectivity of SAWs are illustrated. Propagation characteristics of SAWs in (002) AlN/diamond-based structures are also presented for comparison. Simulation results show that to retain a large reflectivity for the design of RF filters and duplexers, the Cu IDT/(100) AlN/diamond structure possesses the highest phase velocity and largest coupling coefficient at the smallest AlN film thickness- to-wavelength ratio.

Tribological properties of Ag/Ti films on Al2O3 ceramic substrates

NASA Technical Reports Server (NTRS)

Dellacorte, Christopher; Pepper, Stephen V.; Honecy, Frank S.

1991-01-01

Ag solid lubricant films, with a thin Ti interlayer for enhanced adhesion, were sputter deposited on Al2O3 substrate disks to reduce friction and wear. The dual Ag/Ti films were tested at room temperature in a pin-on-disk tribometer sliding against bare, uncoated Al2O3 pins under a 4.9 N load at a sliding velocity of 1 m/s. The Ag/Ti films reduced the friction coefficient by 50 percent to about 0.41 compared to unlubricated baseline specimens. Pin wear was reduced by a factor of 140 and disk wear was reduced by a factor of 2.5 compared to the baseline. These films retain their good tribological properties including adhesion after heat treatments at 850 C and thus may be able to lubricate over a wide temperature range. This lubrication technique is applicable to space lubrication, advanced heat engines, and advanced transportation systems.

Studies on morphology, electrical and optical characteristics of Al-doped ZnO thin films grown by atomic layer deposition

NASA Astrophysics Data System (ADS)

Chen, Li; Chen, Xinliang; Zhou, Zhongxin; Guo, Sheng; Zhao, Ying; Zhang, Xiaodan

2018-03-01

Al doped ZnO (AZO) films deposited on glass substrates through the atomic layer deposition (ALD) technique are investigated with various temperatures from 100 to 250 °C and different Zn : Al cycle ratios from 20 : 0 to 20 : 3. Surface morphology, structure, optical and electrical properties of obtained AZO films are studied in detail. The Al composition of the AZO films is varied by controlling the ratio of Zn : Al. We achieve an excellent AZO thin film with a resistivity of 2.14 × 10‑3 Ω·cm and high optical transmittance deposited at 150 °C with 20 : 2 Zn : Al cycle ratio. This kind of AZO thin films exhibit great potential for optoelectronics device application. Project supported by the State Key Development Program for Basic Research of China (Nos. 2011CBA00706, 2011CBA00707) and the Tianjin Applied Basic Research Project and Cutting-Edge Technology Research Plan (No. 13JCZDJC26900).

[Polarization characteristic of Al + MgF2 film at VUV].

PubMed

Liu, Ying; Li, Zhi-gang; Li, Fu-tian

2002-10-01

Polarization characteristic of Al + MgF2 is researched theoretically and experimentally. According to the theory of electromagnetism, the reflectance perpendicular and parallel to the incident plane of Al + MgF2 is calculated in the way of matrix optics. The effect of incident conditions and thickness of MgF2 is considered on the reflectance of Al + MgF2 coatings. The MgF2 not only prevents the oxidation of aluminum but also increases the reflectance of Al + MgF2 by interference. The polarization of Al + MgF2 is analyzed using the concept of ratio of extinction based on above mentioned calculations. The polarization character of Al + MgF2 and single Al coating is compared. The reflectances perpendicular and parallel to the incident plane of Al + MgF2 film are measured at VUV range, using LiF polarizer as a VUV polarizer. So the polarization character of Al + MgF2 is researched experimentally. Both theoretical and experimental results of the polarization character of Al + MgF2 are coincident.

Influence of substrate bias voltage on structure and properties of the CrAlN films deposited by unbalanced magnetron sputtering

NASA Astrophysics Data System (ADS)

Lv, Yanhong; Ji, Li; Liu, Xiaohong; Li, Hongxuan; Zhou, Huidi; Chen, Jianmin

2012-02-01

The CrAlN films were deposited on silicon and stainless steel substrates by unbalanced magnetron sputtering system. The influence of substrate bias on deposition rate, composition, structure, morphology and properties of the CrAlN films was investigated. The results showed that, with the increase of the substrate bias voltage, the deposition rate decreased accompanied by a change of the preferred orientation of the CrAlN film from (2 2 0) to (2 0 0). The grain size and the average surface roughness of the CrAlN films declined as the bias voltage increases above -100 V. The morphology of the films changed from obviously columnar to dense glass-like structure with the increase of the bias voltage from -50 to -250 V. Meanwhile, the films deposited at moderate bias voltage had better mechanical and tribological properties, while the films deposited at higher bias voltage showed better corrosion resistance. It was found that the corrosion resistance improvement was not only attributed to the low pinhole density of the film, but also to chemical composition of films.

Enhancement of the Ultraviolet Photoresponsivity of Al-doped ZnO Thin Films Prepared by using the Sol-gel Spin-coating Method

NASA Astrophysics Data System (ADS)

Lee, Wookbin; Leem, Jae-Young

2018-03-01

We report the structural, morphological, optical, and ultraviolet (UV) photoresponse properties of Al-doped ZnO (AZO) thin films prepared on silicon substrates with different Al doping concentrations by using the sol-gel spin-coating method. An analysis of the X-ray diffraction patterns of the AZO thin films revealed that the average grain size decreased and the c-axis lattice constant increased with Al content. The field-emission scanning electron microscopy images showed that with Al doping, the grain size decreased, but the film density increased with increasing Al doping concentration from 0% to 3%. These results indicate that the surface area of the film increased with increasing Al doping. The absorbance spectra revealed that the UV absorbance of the AZO thin films increased with increasing Al doping concentration and that the absorption onset shifted towards lower energies. The photoluminescence spectra revealed that with increasing Al doping, the intensity of the visible emission greatly decreased and the visible emission peak shifted forward lower energy (a red shift). The UV sensor based on the AZO thin films exhibited a higher responsivity than that based on the undoped ZnO thin film. Therefore, this study provides a facile method for improving the photoresponsivity of UV sensors.

Highly Oriented Growth of Catalytically Active Zeolite ZSM-5 Films with a Broad Range of Si/Al Ratios.

PubMed

Fu, Donglong; Schmidt, Joel E; Ristanović, Zoran; Chowdhury, Abhishek Dutta; Meirer, Florian; Weckhuysen, Bert M

2017-09-04

Highly b-oriented zeolite ZSM-5 films are critical for applications in catalysis and separations and may serve as models to study diffusion and catalytic properties in single zeolite channels. However, the introduction of catalytically active Al 3+ usually disrupts the orientation of zeolite films. Herein, using structure-directing agents with hydroxy groups, we demonstrate a new method to prepare highly b-oriented zeolite ZSM-5 films with a broad range of Si/Al ratios (Si/Al=45 to ∞). Fluorescence micro-(spectro)scopy was used to monitor misoriented microstructures, which are invisible to X-ray diffraction, and show Al 3+ framework incorporation and illustrate the differences between misoriented and b-oriented films. The methanol-to-hydrocarbons process was studied by operando UV/Vis diffuse reflectance micro-spectroscopy with on-line mass spectrometry, showing that the b-oriented zeolite ZSM-5 films are active and stable under realistic process conditions. © 2017 The Authors. Published by Wiley-VCH Verlag GmbH & Co. KGaA.

Highly Oriented Growth of Catalytically Active Zeolite ZSM‐5 Films with a Broad Range of Si/Al Ratios

PubMed Central

Fu, Donglong; Schmidt, Joel E.; Ristanović, Zoran; Chowdhury, Abhishek Dutta; Meirer, Florian

2017-01-01

Abstract Highly b‐oriented zeolite ZSM‐5 films are critical for applications in catalysis and separations and may serve as models to study diffusion and catalytic properties in single zeolite channels. However, the introduction of catalytically active Al3+ usually disrupts the orientation of zeolite films. Herein, using structure‐directing agents with hydroxy groups, we demonstrate a new method to prepare highly b‐oriented zeolite ZSM‐5 films with a broad range of Si/Al ratios (Si/Al=45 to ∞). Fluorescence micro‐(spectro)scopy was used to monitor misoriented microstructures, which are invisible to X‐ray diffraction, and show Al3+ framework incorporation and illustrate the differences between misoriented and b‐oriented films. The methanol‐to‐hydrocarbons process was studied by operando UV/Vis diffuse reflectance micro‐spectroscopy with on‐line mass spectrometry, showing that the b‐oriented zeolite ZSM‐5 films are active and stable under realistic process conditions. PMID:28675590

Increased magnetic damping in ultrathin films of Co2FeAl with perpendicular anisotropy

NASA Astrophysics Data System (ADS)

Takahashi, Y. K.; Miura, Y.; Choi, R.; Ohkubo, T.; Wen, Z. C.; Ishioka, K.; Mandal, R.; Medapalli, R.; Sukegawa, H.; Mitani, S.; Fullerton, E. E.; Hono, K.

2017-06-01

We estimated the magnetic damping constant α of Co2FeAl (CFA) Heusler alloy films of different thicknesses with an MgO capping layer by means of time-resolved magneto-optical Kerr effect and ferromagnetic resonance measurements. CFA films with thicknesses of 1.2 nm and below exhibited perpendicular magnetic anisotropy arising from the presence of the interface with MgO. While α increased gradually with decreasing CFA film thickness down to 1.2 nm, it was increased substantially when the thickness was reduced further to 1.0 nm. Based on the microstructure analyses and first-principles calculations, we attributed the origin of the large α in the ultrathin CFA film primarily to the Al deficiency in the CFA layer, which caused an increase in the density of states and thereby in the scatterings of their spins.

The Accuracy of Al and Cu Film Thickness Determinations and the Implications for Electron Probe Microanalysis.

PubMed

Matthews, Mike B; Kearns, Stuart L; Buse, Ben

2018-04-01

The accuracy to which Cu and Al coatings can be determined, and the effect this has on the quantification of the substrate, is investigated. Cu and Al coatings of nominally 5, 10, 15, and 20 nm were sputter coated onto polished Bi using two configurations of coater: One with the film thickness monitor (FTM) sensor colocated with the samples, and one where the sensor is located to one side. The FTM thicknesses are compared against those calculated from measured Cu Lα and Al Kα k-ratios using PENEPMA, GMRFilm, and DTSA-II. Selected samples were also cross-sectioned using focused ion beam. Both systems produced repeatable coatings, the thickest coating being approximately four times the thinnest coating. The side-located FTM sensor indicated thicknesses less than half those of the software modeled results, propagating on to 70% errors in substrate quantification at 5 kV. The colocated FTM sensor produced errors in film thickness and substrate quantification of 10-20%. Over the range of film thicknesses and accelerating voltages modeled both the substrate and coating k-ratios can be approximated by linear trends as functions of film thickness. The Al films were found to have a reduced density of ~2 g/cm2.

A photochemical proposal for the preparation of ZnAl{sub 2}O{sub 4} and MgAl{sub 2}O{sub 4} thin films from β-diketonate complex precursors

DOE Office of Scientific and Technical Information (OSTI.GOV)

Cabello, G., E-mail: gerardocabelloguzman@hotmail.com; Lillo, L.; Caro, C.

2016-05-15

Highlights: • ZnAl{sub 2}O{sub 4} and MgAl{sub 2}O{sub 4} thin films were prepared by photo-chemical method. • The Zn(II), Mg(II) and Al(III) β-diketonate complexes were used as precursors. • The photochemical reaction was monitored by UV–vis and FT-IR spectroscopy. • The results reveal spinel oxide formation and the generation of intermediate products. - Abstract: ZnAl{sub 2}O{sub 4} and MgAl{sub 2}O{sub 4} thin films were grown on Si(100) and quartz plate substrates using a photochemical method in the solid phase with thin films of β-diketonate complexes as the precursors. The films were deposited by spin-coating and subsequently photolyzed at room temperaturemore » using 254 nm UV light. The photolysis of these films results in the deposition of metal oxide thin films and fragmentation of the ligands from the coordination sphere of the complexes. The obtained samples were post-annealed at different temperatures (350–1100 °C) for 2 h and characterized by FT-Infrared spectroscopy, X-ray diffraction (XRD), X-ray photoelectron spectroscopy (XPS), atomic force miscroscopy (AFM), and UV–vis spectroscopy. The results indicate the formation of spinel-type structures and other phases. These characteristics determined the quality of the films, which were obtained from the photodeposition of ternary metal oxides.« less

Energy band engineering and controlled p-type conductivity of CuAlO2 thin films by nonisovalent Cu-O alloying

NASA Astrophysics Data System (ADS)

Yao, Z. Q.; He, B.; Zhang, L.; Zhuang, C. Q.; Ng, T. W.; Liu, S. L.; Vogel, M.; Kumar, A.; Zhang, W. J.; Lee, C. S.; Lee, S. T.; Jiang, X.

2012-02-01

The electronic band structure and p-type conductivity of CuAlO2 films were modified via synergistic effects of energy band offset and partial substitution of less-dispersive Cu+ 3d10 with Cu2+ 3d9 orbitals in the valence band maximum by alloying nonisovalent Cu-O with CuAlO2 host. The Cu-O/CuAlO2 alloying films show excellent electronic properties with tunable wide direct bandgaps (˜3.46-3.87 eV); Hall measurements verify the highest hole mobilities (˜11.3-39.5 cm2/Vs) achieved thus far for CuAlO2 thin films and crystals. Top-gate thin film transistors constructed on p-CuAlO2 films were presented, and the devices showed pronounced performance with Ion/Ioff of ˜8.0 × 102 and field effect mobility of 0.97 cm2/Vs.

Ultra-hard amorphous AlMgB14 films RF sputtered onto curved substrates

NASA Astrophysics Data System (ADS)

Grishin, A. M.; Putrolaynen, V. V.; Yuzvyuk, M. H.

2017-03-01

Recently, hard AlMgB14 (BAM) coatings were deposited for the first time by RF magnetron sputtering using a single stoichiometric ceramic target. High target sputtering power and sufficiently short target-to-substrate distance were found to be critical processing conditions. They enabled fabrication of stoichiometric in-depth compositionally homogeneous films with the peak values of nanohardness 88 GPa and Young’s modulus 517 GPa at the penetration depth of 26 nm and, respectively, 35 GPa and 275 GPa at 200 nm depth in 2 µm thick film (Grishin et al 2014 JETP Lett. 100 680). The narrow range of sufficiently short target-to-substrate distance makes impossible to coat non flat specimens. To achieve ultimate BAM films’ characteristics onto curved surfaces we developed two-step sputtering process. The first thin layer is deposited as a template at low RF power that facilitates a layered Frank van der Merwe mode growth of smooth film occurs. The next layer is grown at high RF target sputtering power. The affinity of subsequent flow of sputtered atoms to already evenly condensed template fosters the development of smooth film surface. As an example, we made BAM coating onto hemispherical 5 mm in diameter ball made from a hard tool steel and used as a head of a special gauge. Very smooth (6.6 nm RMS surface roughness) and hard AlMgB14 films fabricated onto commercial ball-shaped items enhance hardness of tool steel specimens by a factor of four.

Atomic layer deposition of Al-incorporated Zn(O,S) thin films with tunable electrical properties

NASA Astrophysics Data System (ADS)

Park, Helen Hejin; Jayaraman, Ashwin; Heasley, Rachel; Yang, Chuanxi; Hartle, Lauren; Mankad, Ravin; Haight, Richard; Mitzi, David B.; Gunawan, Oki; Gordon, Roy G.

2014-11-01

Zinc oxysulfide, Zn(O,S), films grown by atomic layer deposition were incorporated with aluminum to adjust the carrier concentration. The electron carrier concentration increased up to one order of magnitude from 1019 to 1020 cm-3 with aluminum incorporation and sulfur content in the range of 0 ≤ S/(Zn+Al) ≤ 0.16. However, the carrier concentration decreased by five orders of magnitude from 1019 to 1014 cm-3 for S/(Zn+Al) = 0.34 and decreased even further when S/(Zn+Al) > 0.34. Such tunable electrical properties are potentially useful for graded buffer layers in thin-film photovoltaic applications.

Scintillating screens based on the LPE grown Tb3Al5O12:Ce single crystalline films

NASA Astrophysics Data System (ADS)

Zorenko, Yuriy; Douissard, Paul-Antoine; Martin, Thierry; Riva, Federica; Gorbenko, Vitaliy; Zorenko, Tetiana; Paprocki, Kazimierz; Iskalieva, Aizhan; Witkiewicz, Sandra; Fedorov, Alexander; Bilski, Paweł; Twardak, Anna

2017-03-01

We report in this work the creation of new heavy and efficient Tb3Al5O12:Ce (TbAG:Ce) single crystalline film (SCF) scintillators, grown by LPE method from PbO-B2O3 based flux onto Y3Al5O12 (YAG) and Gd3Ga2.5Al2.5O12 (GAGG) substrates, for different optoelectronic applications. The luminescent and scintillation properties of the TbAG:Ce SCF screens, grown onto different types of substrates, are studied and compared with the properties of the Lu3Al5O12:Ce (LuAG:Ce) and YAG:Ce SCF counterparts. TbAG:Ce SCFs show very high scintillation light yield (LY) under α-particles excitation, which overcomes by 30% the LY of high-quality LuAG:Ce SCF samples. In comparison with YAG:Ce and LuAG:Ce SCFs, TbAG:Ce SCF screens show also significantly lower afterglow (up to 10-4 level at X-ray burst duration of 0.1 s), which is comparable with the afterglow level of the best samples of LSO:Ce, Tb SCFs typically being used now for microimaging. Together with a high light output of X-ray excited luminescence, such extremely low afterglow of TbAG:Ce SCF is a very good reason for future development of scintillating screens based on the mentioned garnet. We also introduce the possibility to create new types of ;film-substrate; hybrid scintillators using the LPE method for simultaneous registration of different components of ionizing radiation and microimaging based on the TbAG:Ce SCF and GAGG:Ce substrates.

Scanned carbon beam irradiation of moving films: comparison of measured and calculated response

PubMed Central

2012-01-01

Background Treatment of moving target volumes with scanned particle beams benefits from treatment planning that includes the time domain (4D). Part of 4D treatment planning is calculation of the expected result. These calculation codes should be verified against suitable measurements. We performed simulations and measurements to validate calculation of the film response in the presence of target motion. Methods All calculations were performed with GSI's treatment planning system TRiP. Interplay patterns between scanned particle beams and moving film detectors are very sensitive to slight deviations of the assumed motion parameters and therefore ideally suited to validate 4D calculations. In total, 14 film motion parameter combinations with lateral motion amplitudes of 8, 15, and 20 mm and 4 combinations for lateral motion including range changes were used. Experimental and calculated film responses were compared by relative difference, mean deviation in two regions-of-interest, as well as line profiles. Results Irradiations of stationary films resulted in a mean relative difference of -1.52% ± 2.06% of measured and calculated responses. In comparison to this reference result, measurements with translational film motion resulted in a mean difference of -0.92% ± 1.30%. In case of irradiations incorporating range changes with a stack of 5 films as detector the deviations increased to -6.4 ± 2.6% (-10.3 ± 9.0% if film in distal fall-off is included) in comparison to -3.6% ± 2.5% (-13.5% ± 19.9% including the distal film) for the stationary irradiation. Furthermore, the comparison of line profiles of 4D calculations and experimental data showed only slight deviations at the borders of the irradiated area. The comparisons of pure lateral motion were used to determine the number of motion states that are required for 4D calculations depending on the motion amplitude. 6 motion states per 10 mm motion amplitude are sufficient to calculate the film response in the

Thermo-Optical Properties of Thin-Film TiO2–Al2O3 Bilayers Fabricated by Atomic Layer Deposition

PubMed Central

Ali, Rizwan; Saleem, Muhammad Rizwan; Pääkkönen, Pertti; Honkanen, Seppo

2015-01-01

We investigate the optical and thermo-optical properties of amorphous TiO2–Al2O3 thin-film bilayers fabricated by atomic layer deposition (ALD). Seven samples of TiO2–Al2O3 bilayers are fabricated by growing Al2O3 films of different thicknesses on the surface of TiO2 films of constant thickness (100 nm). Temperature-induced changes in the optical refractive indices of these thin-film bilayers are measured by a variable angle spectroscopic ellipsometer VASE®. The optical data and the thermo-optic coefficients of the films are retrieved and calculated by applying the Cauchy model and the linear fitting regression algorithm, in order to evaluate the surface porosity model of TiO2 films. The effects of TiO2 surface defects on the films’ thermo-optic properties are reduced and modified by depositing ultra-thin ALD-Al2O3 diffusion barrier layers. Increasing the ALD-Al2O3 thickness from 20 nm to 30 nm results in a sign change of the thermo-optic coefficient of the ALD-TiO2. The thermo-optic coefficients of the 100 nm-thick ALD-TiO2 film and 30 nm-thick ALD-Al2O3 film in a bilayer are (0.048 ± 0.134) × 10−4 °C−1 and (0.680 ± 0.313) × 10−4 °C−1, respectively, at a temperature T = 62 °C.

W:Al 2O 3 nanocomposite thin films with tunable optical properties prepared by atomic layer deposition

DOE PAGES

Babar, Shaista; Mane, Anil U.; Yanguas-Gil, Angel; ...

2016-06-17

Here, a systematic alteration in the optical properties of W:Al 2O 3 nanocomposite films is demonstrated by precisely varying the W cycle percentage (W%) from 0 to 100% in Al 2O 3 during atomic layer deposition. The direct and indirect band energies of the nanocomposite materials decrease from 5.2 to 4.2 eV and from 3.3 to 1.8 eV, respectively, by increasing the W% from 10 to 40. X-ray absorption spectroscopy reveals that, for W% < 50, W is present in both metallic and suboxide states, whereas, for W% ≥ 50, only metallic W is seen. This transition from dielectric tomore » metallic character at W% ~ 50 is accompanied by an increase in the electrical and thermal conductivity and the disappearance of a clear band gap in the absorption spectrum. The density of the films increases monotonically from 3.1 g/cm 3 for pure Al 2O 3 to 17.1 g/cm 3 for pure W, whereas the surface roughness is greatest for the W% = 50 films. The W:Al 2O 3 nanocomposite films are thermally stable and show little change in optical properties upon annealing in air at 500 °C. These W:Al 2O 3 nanocomposite films show promise as selective solar absorption coatings for concentrated solar power applications.« less

X-ray Reciprocal Space Mapping of Graded Al x Ga1 - x N Films and Nanowires.

PubMed

Stanchu, Hryhorii V; Kuchuk, Andrian V; Kladko, Vasyl P; Ware, Morgan E; Mazur, Yuriy I; Zytkiewicz, Zbigniew R; Belyaev, Alexander E; Salamo, Gregory J

2016-12-01

The depth distribution of strain and composition in graded Al x Ga1 - x N films and nanowires (NWs) are studied theoretically using the kinematical theory of X-ray diffraction. By calculating [Formula: see text] reciprocal space maps (RSMs), we demonstrate significant differences in the intensity distributions from graded Al x Ga1 - x N films and NWs. We attribute these differences to relaxation of the substrate-induced strain on the NWs free side walls. Finally, we demonstrate that the developed X-ray reciprocal space map model allows for reliable depth profiles of strain and Al composition determination in both Al x Ga1 - x N films and NWs.

Properties of AlF3 and LaF3 films at 193nm

NASA Astrophysics Data System (ADS)

Xue, Chunrong; Shao, Jianda

2010-10-01

In order to develop low loss, high-performance 193nm Fluoride HR mirrors and anti-reflection coatings, LaF3 and AlF3 materials, used for a single-layer coating, were deposited by a molybdenum boat evaporation process. Various microstructures that formed under different substrate temperatures and with deposition rates were investigated. The relation between these microstructures (including cross section morphology, surface roughness and crystalline structure), the optical properties (including refractive index and optical loss) and mechanical properties (stress) were investigated. Furthermore, AlF3 used as a low-index material and LaF3 used as a high-index material were designed and deposited for multilayer coatings. Transmittance, reflectance, stress, and the laser-induced damage threshold (LIDT) were studied. It is shown that AlF3 and LaF3 thin films, deposited on the substrate at a temperature of 300 °C, obtained good quality thin films with high transmittance and little optical loss at 193 nm. For multilayer coatings, the absorption mainly comes from LaF3. Based on these studies, The thickness of 193nm films was controled by a 1/3 baffle with pre-coating technology. the LaF3/AlF3 AR coantings and HR mirrors at 193nm were designed and deposited. Under the present experimental conditions, the reflectance of LaF3/AlF3 HR mirror is up to 96%, and its transmittance is 1.5%. the LaF3/AlF3 AR coanting's residual reflectance is less than 0.14%, and single-sided transmittance is 93.85%. To get a high-performance 193nm AR coating, super-polished substrate is the best choice.

Deposition of undoped and Al doped ZnO thin films using RF magnetron sputtering and study of their structural, optical and electrical properties

NASA Astrophysics Data System (ADS)

Parvathy Venu, M.; Shrisha B., V.; Balakrishna, K. M.; Naik, K. Gopalakrishna

2017-05-01

Undoped ZnO and Al doped ZnO thin films were deposited on glass and p-Si(100) substrates by RF magnetron sputtering technique at room temperature using homemade targets. ZnO target containing 5 at% of Al2O3 as doping source was used for the growth of Al doped ZnO thin films. XRD revealed that the films have hexagonal wurtzite structure with high crystallinity. Morphology and chemical composition of the films have been indicated by FESEM and EDAX studies. A blue shift of the band gap energy and higher optical transmittance has been observed in the case of Al doped ZnO (ZnO:Al) thin films with respect to the ZnO thin films. The as deposited films on p-Si were used to fabricate n-ZnO/p-Si(100) and n-ZnO:Al/p-Si(100) heterojunction diodes and their room temperature current-voltage characteristics were studied.

Tuning the formation of p-type defects by peroxidation of CuAlO2 films

NASA Astrophysics Data System (ADS)

Luo, Jie; Lin, Yow-Jon; Hung, Hao-Che; Liu, Chia-Jyi; Yang, Yao-Wei

2013-07-01

p-type conduction of CuAlO2 thin films was realized by the rf sputtering method. Combining with Hall, X-ray photoelectron spectroscopy, energy dispersive spectrometer, and X-ray diffraction results, a direct link between the hole concentration, Cu vacancy (VCu), and interstitial oxygen (Oi) was established. It is shown that peroxidation of CuAlO2 films may lead to the increased formation probability of acceptors (VCu and Oi), thus, increasing the hole concentration. The dependence of the VCu density on growth conditions was identified for providing a guide to tune the formation of p-type defects in CuAlO2. Understanding the defect-related p-type conductivity of CuAlO2 is essential for designing optoelectronic devices and improving their performance.

Studies on stability of PEC cells formed with CdS:Al films

NASA Astrophysics Data System (ADS)

Lokhande, C. D.; Pawar, S. H.

1984-02-01

Aluminum doped and undoped CdS films are deposited on stainless steel substrates by chemical bath deposition technique and are employed in PEC cells. The effects of heat treatment to photoanode and addition of salts like KCl and NaCl in an electrolyte on the stability of the PEC cells are studied. It is found that though the PEC cells formed with CdS films are stable in NaOH-Na 2S-S electrolyte, the stability of PEC cells formed with Al doped CdS films is achieved only after the addition of saturated salts in the electrolyte.

The Study of Electrical Properties for Multilayer La2O3/Al2O3 Dielectric Stacks and LaAlO3 Dielectric Film Deposited by ALD.

PubMed

Feng, Xing-Yao; Liu, Hong-Xia; Wang, Xing; Zhao, Lu; Fei, Chen-Xi; Liu, He-Lei

2017-12-01

The capacitance and leakage current properties of multilayer La 2 O 3 /Al 2 O 3 dielectric stacks and LaAlO 3 dielectric film are investigated in this paper. A clear promotion of capacitance properties is observed for multilayer La 2 O 3 /Al 2 O 3 stacks after post-deposition annealing (PDA) at 800 °C compared with PDA at 600 °C, which indicated the recombination of defects and dangling bonds performs better at the high-k/Si substrate interface for a higher annealing temperature. For LaAlO 3 dielectric film, compared with multilayer La 2 O 3 /Al 2 O 3 dielectric stacks, a clear promotion of trapped charges density (N ot ) and a degradation of interface trap density (D it ) can be obtained simultaneously. In addition, a significant improvement about leakage current property is observed for LaAlO 3 dielectric film compared with multilayer La 2 O 3 /Al 2 O 3 stacks at the same annealing condition. We also noticed that a better breakdown behavior for multilayer La 2 O 3 /Al 2 O 3 stack is achieved after annealing at a higher temperature for its less defects.

A reversible bipolar WORM device based on AlOxNy thin film with Al nano phase embedded

NASA Astrophysics Data System (ADS)

Zhu, W.; Li, J.; Zhang, L.; Hu, X. C.

2017-03-01

An Al-rich AlOxNy thin film based reversible Write-Once-Read-Many-Times (WORM) memory device with MIS structure could transit from high resistance state (HRS, ∼1011 Ω) to low resistance state (LRS, ∼105 Ω) by sweeping voltage up to ∼20 V. The first switching could be recorded as writing process for WORM device which may relate to conductive path are formed through the thin film. The conductive path should be formed by both Al nano phase and oxygen vacancies. Among of them, Al nano phases are not easy to move, but oxygen vacancies could migrate under high E-field or at high temperature environment. Such conductive path is not sensitive to charging effect after it formed, but it could be broken by heating effect, which may relate to the migration of excess Al ions and oxygen vacancies at high temperature. After baking LRS (ON state) WORM device at 200 °C for 2 min, the conductivity will decrease to HRS which indicates conductive path is broken and device back to HRS (OFF state) again. This phenomenon could be recorded as recovery process. Both writing and recovery process related to migration of oxygen vacancies and could be repeated over 10 times in this study. It also indicates that there is no permanent breakdown occurred in MIS structured WORM device operation. We suggest that this conductive path only can be dissolved by a temperature sensitive electro-chemical action. This WORM device could maintain at LRS over 105 s with on-off ratio over 4 orders.

Structural characterization and magnetic properties of L10-MnAl films grown on different underlayers by molecular beam epitaxy

NASA Astrophysics Data System (ADS)

Takata, Fumiya; Gushi, Toshiki; Anzai, Akihito; Toko, Kaoru; Suemasu, Takashi

2018-03-01

We grow MnAl films on different underlayers by molecular beam epitaxy (MBE), and investigate their structural and magnetic properties. L10-ordered MnAl films were successfully grown both on an MgO(0 0 1) single-crystalline substrate and on an Mn4N(0 0 1) buffer layer formed on MgO(0 0 1) and SrTiO3(0 0 1) substrates. For the MgO substrate, post rapid thermal annealing (RTA) drastically improved the crystalline quality and the degree of L10-ordering, whereas no improvement in the crystallinity was achieved by altering the substrate temperature (TS) during MBE growth. However, high-quality L10-MnAl films were formed on the Mn4N buffer layer by simply varying TS. Structural analysis using X-ray diffraction showed MnAl on an MgO substrate had a cubic structure whereas MnAl on the Mn4N buffer had a tetragonal structure. This difference in crystal structure affected the magnetic properties of the MnAl films. The uniaxial magnetic anisotropy constant (Ku) was drastically improved by inserting an Mn4N buffer layer. We achieved a perpendicular magnetic anisotropy of Ku = 5.0 ± 0.7 Merg/cm3 for MnAl/Mn4N film on MgO and 6.0 ± 0.2 Merg/cm3 on STO. These results suggest that Mn4N has potential as an underlayer for L10-MnAl.

A comparison study of Co and Cu doped MgO diluted magnetic thin films

NASA Astrophysics Data System (ADS)

Sarıtaş, S.; ćakıcı, T.; Muǧlu, G. Merhan; Kundakcı, M.; Yıldırım, M.

2017-02-01

Transition metal-doped MgO diluted magnetic thin films are appropriate candidates for spintronic applications and designing magnetic devices and sensors. Therefore, MgO:Co and MgO:Cu films were deposited on glass substrates by Chemical Spray Pyrolysis (CSP) method different thin film deposition parameters. Deposited different transition metal doped MgO thin films were compared in terms of optic and structural properties. Comparison optic analysis of the films was investigated spectral absorption and transmittance measurements by UV-Vis double beam spectrophotometer technique. Comparison structural analysis of the thin films was examined by using XRD, Raman Analysis, SEM, EDX and AFM techniques. The transition metal-doped; MgO:Co and MgO:Cu thin films maybe have potential applications in spintronics and magnetic data storage.

Comparison of stress states in GaN films grown on different substrates: Langasite, sapphire and silicon

NASA Astrophysics Data System (ADS)

Park, Byung-Guon; Saravana Kumar, R.; Moon, Mee-Lim; Kim, Moon-Deock; Kang, Tae-Won; Yang, Woo-Chul; Kim, Song-Gang

2015-09-01

We demonstrate the evolution of GaN films on novel langasite (LGS) substrate by plasma-assisted molecular beam epitaxy, and assessed the quality of grown GaN film by comparing the experimental results obtained using LGS, sapphire and silicon (Si) substrates. To study the substrate effect, X-ray diffraction (XRD), scanning electron microscopy (SEM), Raman spectroscopy and photoluminescence (PL) spectra were used to characterize the microstructure and stress states in GaN films. Wet etching of GaN films in KOH solution revealed that the films deposited on GaN/LGS, AlN/sapphire and AlN/Si substrates possess Ga-polarity, while the film deposited on GaN/sapphire possess N-polarity. XRD, Raman and PL analysis demonstrated that a compressive stress exist in the films grown on GaN/LGS, AlN/sapphire, and GaN/sapphire substrates, while a tensile stress appears on AlN/Si substrate. Comparative analysis showed the growth of nearly stress-free GaN films on LGS substrate due to the very small lattice mismatch ( 3.2%) and thermal expansion coefficient difference ( 7.5%). The results presented here will hopefully provide a new framework for the further development of high performance III-nitride-related devices using GaN/LGS heteroepitaxy.

Large-scale fabrication of nanopatterned sapphire substrates by annealing of patterned Al thin films by soft UV-nanoimprint lithography

PubMed Central

2013-01-01

Large-scale nanopatterned sapphire substrates were fabricated by annealing of patterned Al thin films. Patterned Al thin films were obtained by soft UV-nanoimprint lithography and reactive ion etching. The soft mold with 550-nm-wide lines separated by 250-nm space was composed of the toluene-diluted polydimethylsiloxane (PDMS) layer supported by the soft PDMS. Patterned Al thin films were subsequently subjected to dual-stage annealing due to the melting temperature of Al thin films (660°C). The first comprised a low-temperature oxidation anneal at 450°C for 24 h. This was followed by a high-temperature annealing in the range of 1,000°C and 1,200°C for 1 h to induce growth of the underlying sapphire single crystal to consume the oxide layer. The SEM results indicate that the patterns were retained on sapphire substrates after high-temperature annealing at less than 1,200°C. Finally, large-scale nanopatterned sapphire substrates were successfully fabricated by annealing of patterned Al thin films for 24 h at 450°C and 1 h at 1,000°C by soft UV-nanoimprint lithography. PMID:24215718

Nanostructure of aluminium (Al) - Doped zinc oxide (AZO) thin films

NASA Astrophysics Data System (ADS)

Hussin, Rosniza; Husin, M. Asri

2017-12-01

Aluminium (Al)-doped Zinc Oxide (ZnO) was deposited on glass substrates by using the sol-gel dip coating technique. Next, AZO sol-gel solution was produced via sol-gel method. Al was used as doped element with molar ratios of 1%, 2%, and 3%, while the calcination temperatures were set at 400°C, 500°C, and 600°C for 2 hours. In fact, characterization was carried out in order to determine the effect of calcination temperature and molar ratio of doping by using several techniques, such as X-Ray Diffraction (XRD), Atomic Force Microscopy (AFM), Field Emission Scanning Electron Microscopy (FESEM), and Ultraviolet-Visible spectroscopy (UV-Vis). XRD was performed to investigate the crystal structure in which the ZnO was in wurtzite hexagonal form. Next, Energy Dispersive Spectroscopy (EDS) was used to determine the composition of thin films where the result revealed the existence of zinc, oxygen, and aluminium. The roughness of the deposited film was later measured by using the AFM approach where the findings indicated increment in RMS from 8.496 nm to 35.883 nm as the temperature was increased. Additionally, FESEM was carried out to look into the microstructure surfaces of the deposited AZO thin film for increased temperature caused the particle to grow bigger for all molar ratio of dopant. Lastly, UV-Vis was conducted to study the optical properties of AZO, in which the result demonstrated that AZO thin film possessed the highest transmittance percentage among all samples above 90% with band gap value that ranged from 3.25 eV to 3.32 eV.

Deep-UV sensors based on SAW oscillators using low-temperature-grown AlN films on sapphires.

PubMed

Laksana, Chipta; Chen, Meei-Ru; Liang, Yen; Tzou, An-Jyeg; Kao, Hui-Ling; Jeng, Erik; Chen, Jyh; Chen, Hou-Guang; Jian, Sheng-Rui

2011-08-01

High-quality epitaxial AlN films were deposited on sapphire substrates at low growth temperature using a helicon sputtering system. SAW filters fabricated on the AlN films exhibited excellent characteristics, with center frequency of 354.2 MHz, which corresponds to a phase velocity of 5667 m/s. An oscillator fabricated using AlN-based SAW devices is presented and applied to deep-UV light detection. A frequency downshift of about 43 KHz was observed when the surface of SAW device was illuminated by a UV source with dominant wavelength of around 200 nm. The results indicate the feasibility of developing remote sensors for deep-UV measurement using AlN-based SAW oscillators.

Microstructures and magnetic properties of Co-Al-O granular thin films

NASA Astrophysics Data System (ADS)

Ohnuma, M.; Hono, K.; Onodera, H.; Ohnuma, S.; Fujimori, H.; Pedersen, J. S.

2000-01-01

The microstructures of Co-Al-O thin films of wide varieties of compositions are studied by transmission electron microscopy and small angle x-ray scattering (SAXS). In the superparamagnetic specimens, high resolution electron microscope images reveal that isolated spherical Co particles are surrounded by an amorphous aluminum oxide matrix. However, in the soft ferromagnetic films, the shape of the Co particles is prolate ellipsoidal. SAXS intensities from the soft magnetic specimens decrease inversely with the wave vector, q, in a low wave-vector region, while an interparticle interference peak is observed for the superparamagnetic specimens. The scattering profiles of the soft magnetic films imply that the Co particles have a cylindrical shape and are randomly oriented. The correlation between the magnetic properties and the microstructures is discussed.

Polar phase transitions in heteroepitaxial stabilized La0.5Y0.5AlO3 thin films

NASA Astrophysics Data System (ADS)

Liu, Shenghua; Zhang, Chunfeng; Zhu, Mengya; He, Qian; Chakhalian, Jak; Liu, Xiaoran; Borisevich, Albina; Wang, Xiaoyong; Xiao, Min

2017-10-01

We report on the fabrication of epitaxial La0.5Y0.5AlO3 ultrathin films on (001) LaAlO3 substrates. Structural characterizations by scanning transmission electron microscopy and x-ray diffraction confirm the high quality of the film with a - b + c - AlO6 octahedral tilt pattern. Unlike either of the nonpolar parent compound, LaAlO3 and YAlO3, second harmonic generation measurements on the thin films suggest a nonpolar-polar phase transition at T c near 500 K, and a polar-polar phase transition at T a near 160 K. By fitting the angular dependence of the second harmonic intensities, we further propose that the two polar structures can be assigned to the Pmc2 1 and Pmn2 1 space group, while the high temperature nonpolar structure belongs to the Pbnm space group.

Growth mechanisms of GaSb heteroepitaxial films on Si with an AlSb buffer layer

DOE Office of Scientific and Technical Information (OSTI.GOV)

Vajargah, S. Hosseini; Botton, G. A.; Brockhouse Institute for Materials Research, McMaster University, Hamilton, Ontario L8S 4M1

2013-09-21

The initial growth stages of GaSb epilayers on Si substrates and the role of the AlSb buffer layer were studied by high-angle annular dark-field scanning transmission electron microscopy (HAADF-STEM). Heteroepitaxy of GaSb and AlSb on Si both occur by Volmer-Weber (i.e., island mode) growth. However, the AlSb and GaSb islands have distinctly different characteristics as revealed through an atomic-resolution structural study using Z-contrast of HAADF-STEM imaging. While GaSb islands are sparse and three dimensional, AlSb islands are numerous and flattened. The introduction of 3D island-forming AlSb buffer layer facilitates the nucleation of GaSb islands. The AlSb islands-assisted nucleation of GaSbmore » islands results in the formation of drastically higher quality planar film at a significantly smaller thickness of films. The interface of the AlSb and GaSb epilayers with the Si substrate was further investigated with energy dispersive X-ray spectrometry to elucidate the key role of the AlSb buffer layer in the growth of GaSb epilayers on Si substrates.« less

The Ion-Assisted Deposition of Optical Thin Films

DTIC Science & Technology

1988-01-01

nitrogen ions (Martin et al. 1984b). The substrates were maintained at room temperature or at 300 °C. Films were deposited of the characteristic gold color...band matches that reported by Hass et al. (1959) for CeF3 films, with aborption bands at 210 nm, 220 nm, 235 nm, and 250 nm 03 corresponding to...onset of aborption than LaF 3 . This could be due to the relatively short-wavelength absorption edge of La20 3 (300 nm) in comparison to NdF3 (400 nm

The anisotropic effective damping of thickness-dependent epitaxial Co2FeAl films studied by spin rectification

NASA Astrophysics Data System (ADS)

Chen, Zhendong; Kong, Wenwen; Mi, Kui; Chen, Guilin; Zhang, Peng; Fan, Xiaolong; Gao, Cunxu; Xue, Desheng

2018-03-01

Epitaxial Co2FeAl films with the thickness varying from 26.4 nm to 4.6 nm were grown on MgO(001) substrates by molecular beam epitaxy. Spin rectification was adopted to study the dynamic magnetic properties of the Co2FeAl films, considering the reported advantages of this technique with high thickness-independent sensitivity on samples. At a fixed microwave frequency, the in-plane angular dependent resonance fields and their linewidths exhibit a superposition of a uniaxial and a fourfold anisotropy for all samples. The results reveal an anisotropic damping behavior of the films. Along in-plane different azimuths of the films, frequency-dependent resonance-field linewidths were investigated. The anisotropic effective damping of the films with the thickness varying from 26.4 nm to 4.6 nm was then analyzed, which is contributed from the two-magnon scattering.

Design and fabrication of enhanced corrosion resistance Zn-Al layered double hydroxides films based anion-exchange mechanism on magnesium alloys

NASA Astrophysics Data System (ADS)

Zhou, Meng; Yan, Luchun; Ling, Hao; Diao, Yupeng; Pang, Xiaolu; Wang, Yanlin; Gao, Kewei

2017-05-01

Layered double hydroxides (LDHs) with brucite-like layer structure and the facile exchangeability of intercalated anions had attracted tremendous interest in many fields because of their great importance for both fundamental studies and practical applications. Herein zinc-aluminum layered double hydroxides (Zn-Al LDHs) films intercalated with nitrate anions on the magnesium alloy substrate were designed and fabricated via a facile hydrothermal crystallization method. In order to obtain better corrosion resistance, chloride and vanadate anions were intercalated into the LDHs interlayers via the anion-exchange reaction. X-ray diffraction (XRD), Fourier transform infrared (FT-IR) spectroscopy and scanning electronic microscopy (SEM) were used to examine structure, composition and morphology of the Zn-Al-NO3 LDHs, Zn-Al-Cl LDHs and Zn-Al-VOx LDHs films. The corrosion resistance of the Zn-Al LDHs with different anion films was estimated by the electrochemical impedance spectroscopy (EIS) and potentiodynamic polarization measurement. EIS and polarization curves measurements revealed that the magnesium alloy could be effectively protected by the Zn-Al-Cl LDHs and Zn-Al-VOx LDHs films due to the blocking effect of chloride anions and the control-release ability of vanadate anions.

Al203 thin films on Silicon and Germanium substrates for CMOS and flash memory applications

NASA Astrophysics Data System (ADS)

Gopalan, Sundararaman; Dutta, Shibesh; Ramesh, Sivaramakrishnan; Prathapan, Ragesh; Sreehari G., S.

2017-07-01

As scaling of device dimensions has continued, it has become necessary to replace traditional SiO2 with high dielectric constant materials in the conventional CMOS devices. In addition, use of metal gate electrodes and Germanium substrates may have to be used in order to address leakage and mobility issues. Al2O3 is one of the potential candidates both for CMOS and as a blocking dielectric for Flash memory applications owing to its low leakage. In this study, the effects of sputtering conditions and post-deposition annealing conditions on the electrical and reliability characteristics of MOS capacitors using Al2O3 films on Si and Ge substrates with Aluminium gate electrodes have been presented. It was observed that higher sputtering power resulted in larger flat-band voltage (Vfb) shifts, more hysteresis, higher interface state density (Dit) and a poorer reliability. Wit was also found that while a short duration high temperature annealing improves film characteristics, a long duration anneal even at 800C was found to be detrimental to MOS characteristics. Finally, the electronic conduction mechanism in Al2O3 films was also studied. It was observed that the conduction mechanism varied depending on the annealing condition, thickness of film and electric field.

Nanostructural origin of semiconductivity and large magnetoresistance in epitaxial NiCo2O4/Al2O3 thin films

NASA Astrophysics Data System (ADS)

Zhen, Congmian; Zhang, XiaoZhe; Wei, Wengang; Guo, Wenzhe; Pant, Ankit; Xu, Xiaoshan; Shen, Jian; Ma, Li; Hou, Denglu

2018-04-01

Despite low resistivity (~1 mΩ cm), metallic electrical transport has not been commonly observed in inverse spinel NiCo2O4, except in certain epitaxial thin films. Previous studies have stressed the effect of valence mixing and the degree of spinel inversion on the electrical conduction of NiCo2O4 films. In this work, we studied the effect of nanostructural disorder by comparing the NiCo2O4 epitaxial films grown on MgAl2O4 (1 1 1) and on Al2O3 (0 0 1) substrates. Although the optimal growth conditions are similar for the NiCo2O4 (1 1 1)/MgAl2O4 (1 1 1) and the NiCo2O4 (1 1 1)/Al2O3 (0 0 1) films, they show metallic and semiconducting electrical transport, respectively. Post-growth annealing decreases the resistivity of NiCo2O4 (1 1 1)/Al2O3 (0 0 1) films, but the annealed films are still semiconducting. While the semiconductivity and the large magnetoresistance in NiCo2O4 (1 1 1)/Al2O3 (0 0 1) films cannot be accounted for in terms of non-optimal valence mixing and spinel inversion, the presence of anti-phase boundaries between nano-sized crystallites, generated by the structural mismatch between NiCo2O4 and Al2O3, may explain all the experimental observations in this work. These results reveal nanostructural disorder as being another key factor for controlling the electrical transport of NiCo2O4, with potentially large magnetoresistance for spintronics applications.

Enhanced Corrosion Resistance of Superhydrophobic Layered Double Hydroxide Films with Long-Term Stability on Al Substrate.

PubMed

Cao, Yanhui; Zheng, Dajiang; Li, Xueliang; Lin, Jinyan; Wang, Cheng; Dong, Shigang; Lin, Changjian

2018-05-02

A superhydrophobic ZnAl-layered double hydroxide (LDH)-La film was prepared by a hydrothermal method and further modification by laurate anions in this work. Comprehensive characterizations of this film were performed in terms of morphology, composition, structure, roughness, and wettability by scanning electronic microscopy, energy-dispersive X-ray spectroscopy, X-ray diffraction, three-dimensional laser scanning confocal microscopy. The long-term corrosion protection effect of this superhydrophobic film was investigated deeply by monitoring the changes of the electrochemical impedance spectra for a long time of up to a month in 3.5 wt % NaCl solution. In the meantime, the changes of the contact angle were also recorded with the evolution of the immersion time. The result indicated that the stable superhydrophobic ZnAl-LDH-La film was able to provide efficient protection for the underlying Al substrate for a long time. In addition, the capability of the superhydrophobic surface against harsh conditions, including chemical damages and physical damages, was emphatically investigated. It was found that the superhydrophobic surface was chemically stable toward acid (pH ≥ 3), alkali, and heating, and it also exhibited high ultraviolet (UV) radiation resistance. This superhydrophobic coating maintained superhydrophobicity for 7 days of radiation in an UV chamber equipped with a 40 W UV lamp (λ = 254 nm), indicating superior ability of adapting to outdoor environment. This comprehensive investigation of the superhydrophobic ZnAl-LDH-La film is considerably helpful for researchers and engineers to get deep insight into its potential for practical applications in the field of corrosion and protection.

Comparative study for highly Al and Mg doped ZnO thin films elaborated by sol gel method for photovoltaic application

NASA Astrophysics Data System (ADS)

El Hallani, G.; Nasih, S.; Fazouan, N.; Liba, A.; Khuili, M.; Sajieddine, M.; Mabrouki, M.; Laanab, L.; Atmani, E. H.

2017-04-01

Transparent conducting oxides such as ZnO doped with Al or Mg are commonly used in solar cells, light emitting diodes, photodetectors, and ultraviolet laser diodes. In our work, we focus on a comparative study of the structural, optical, and electrical properties of ZnO films highly doped with Al (AZO) and Mg (MZO). These films are deposited on glass substrates by the sol-gel spin coating method. The doping concentrations for Al and Mg are fixed to 5%-30%. The XRD spectra indicate that all the samples are polycrystalline with hexagonal wurtzite structures, exhibiting a preferred orientation along the (002) plane. Low degradation in crystallinity was observed for MZO even at a Mg concentration of 30%. The MgO phase started to appear compared to Al-doped layers where smaller grains are formed inducing a deterioration in the films just after doping but no new phase appeared. This result is in agreement with other experimental results [J. K. Rath, Sol. Energy Mater. Sol. Cells 76, 431-487 (2003); Morris et al., J. Appl. Phys. 67, 1079-1087 (1990)]. By AFM analysis, the results indicate a significantly rough surface for MZO compared to AZO films. For equal Al and Mg dopant concentrations, we observe that the transmittance spectra of MZO thin films are wider than those of AZO, indicating a shift toward shorter wavelengths with an optical gap energy equal to 3.67 eV. The electrical measurements of AZO and MZO thin films were made using the I-V characteristic obtained by the four probe method. All the films present an ohmic behavior. The conductivity and the mobility of AZO films were found to be better than those of MZO.

Post-deposition-annealing effect on current conduction in Al2O3 films formed by atomic layer deposition with H2O oxidant

NASA Astrophysics Data System (ADS)

Hiraiwa, Atsushi; Matsumura, Daisuke; Okubo, Satoshi; Kawarada, Hiroshi

2017-02-01

Atomic-layer-deposition (ALD) Al2O3 films are promising as gate insulators of non-Si semiconductor devices. Although they allow relatively small leakage currents just after deposition, ALD Al2O3 films formed at low temperatures are subject to high temperature during fabrication or operation of devices. Therefore, the effect of post-deposition annealing (PDA) on the properties of Al2O3 films is investigated in this study. ALD Al2O3 films formed using H2O oxidant at low temperatures are compacted by PDA, but their mass density and dielectric constant remain approximately unchanged or slightly decrease owing to the desorption of methyl groups contained in the films as impurities. In accordance with these results, the wet etching rate of Al2O3 films is not much reduced by PDA. The conduction current in ALD Al2O3 films formed on Si is reduced by PDA and becomes smaller than that in films formed at the same ALD temperatures as those of PDA. The conduction current for PDA temperatures above 250 °C, however, increases and, accordingly, spoils the merit of low-temperature ALD. Therefore, given that the dielectric constant of annealed films remains low, high-temperature ALD is practically more significant than applying PDA to low-temperature ALD Al2O3 films from the viewpoint of leakage current under the same thermal budget. Space-charge-controlled field emission analysis revealed that, at the aforementioned threshold temperature, PDA abruptly increases the Al2O3/SiO2 interfacial dipoles and simultaneously reduces the amount of the positive charge near the interface. The so-called negative-charge buildup by PDA might be caused by this decrease in the positive charge.

Laser Trimming of CuAlMo Thin-Film Resistors: Effect of Laser Processing Parameters

NASA Astrophysics Data System (ADS)

Birkett, Martin; Penlington, Roger

2012-08-01

This paper reports the effect of varying laser trimming process parameters on the electrical performance of a novel CuAlMo thin-film resistor material. The films were prepared on Al2O3 substrates by direct-current (DC) magnetron sputtering, before being laser trimmed to target resistance value. The effect of varying key laser parameters of power, Q-rate, and bite size on the resistor stability and tolerance accuracy were systematically investigated. By reducing laser power and bite size and balancing this with Q-rate setting, significant improvements in resistor stability and resistor tolerance accuracies of less than ±0.5% were achieved.

Fabrication and Characteristics of High Capacitance Al Thin Films Capacitor Using a Polymer Inhibitor Bath in Electroless Plating Process.

PubMed

Cho, Young-Lae; Lee, Jung-Woo; Lee, Chang-Hyoung; Choi, Hyung-Seon; Kim, Sung-Su; Song, Young Il; Park, Chan; Suh, Su-Jeong

2015-10-01

An aluminum (Al) thin film capacitor was fabricated for a high capacitance capacitor using electrochemical etching, barrier-type anodizing, and electroless Ni-P plating. In this study, we focused on the bottom-up filling of Ni-P electrodes on Al2O3/Al with etched tunnels. The Al tunnel pits were irregularly distributed on the Al foil, diameters were in the range of about 0.5~1 μm, the depth of the tunnel pits was approximately 35~40 μm, and the complex structure was made full filled hard metal. To control the plating rate, the experiment was performed by adding polyethyleneimine (PEI, C2H5N), a high molecular substance. PEI forms a cross-link at the etching tunnel inlet, playing the role of delaying the inlet plating. When the PEI solution bath was used after activation, the Ni-P layer was deposited selectively on the bottoms of the tunnels. The characteristics were analyzed by adding the PEI addition quantity rate of 100~600 mg/L into the DI water. The capacitance of the Ni-P/Al2O3 (650~700 nm)/Al film was measured at 1 kHz using an impedance/gain phase analyzer. For the plane film without etch tunnels the capacitance was 12.5 nF/cm2 and for the etch film with Ni-P bottom-up filling the capacitance was 92 nF/cm2. These results illustrate a remarkable maximization of capacitance for thin film metal capacitors.

Role of vacancy defects in Al doped ZnO thin films for optoelectronic devices

NASA Astrophysics Data System (ADS)

Rotella, H.; Mazel, Y.; Brochen, S.; Valla, A.; Pautrat, A.; Licitra, C.; Rochat, N.; Sabbione, C.; Rodriguez, G.; Nolot, E.

2017-12-01

We report on the electrical, optical and photoluminescence properties of industry-ready Al doped ZnO thin films grown by physical vapor deposition, and their evolution after annealing under vacuum. Doping ZnO with Al atoms increases the carrier density but also favors the formation of Zn vacancies, thereby inducing a saturation of the conductivity mechanism at high aluminum content. The electrical and optical properties of these thin layered materials are both improved by annealing process which creates oxygen vacancies that releases charge carriers thus improving the conductivity. This study underlines the effect of the formation of extrinsic and intrinsic defects in Al doped ZnO compound during the fabrication process. The quality and the optoelectronic response of the produced films are increased (up to 1.52 mΩ \\cdotcm and 3.73 eV) and consistent with the industrial device requirements.

Pulsed laser deposition of functionalized Mg-Al layered double hydroxide thin films

NASA Astrophysics Data System (ADS)

Vlad, A.; Birjega, R.; Tirca, I.; Matei, A.; Mardare, C. C.; Hassel, A. W.; Nedelcea, A.; Dinescu, M.; Zavoianu, R.

2018-02-01

In this paper, magnesium-aluminium layered double hydroxide (LDH) has been functionalized with sodium dodecyl sulfate (DS) and deposited as thin film by pulsed laser deposition (PLD). Mg, Al-LDH powders were prepared by co-precipitation and used as reference material. Intercalation of DS as an anionic surfactant into the LDHs host layers has been prepared in two ways: co-precipitation (P) and reconstruction (R). DS intercalation occurred in LDH powder via both preparation methods. The films deposited via PLD, in particular at 532 and 1064 nm, preserve the organic intercalated layered structure of the targets prepared from these powders. The results reveal the ability of proposed deposition technique to produce functional composite organo-modified LDHs thin films.

Interactions between glycine and amorphous solid water nanoscale films

NASA Astrophysics Data System (ADS)

Tzvetkov, George; Koller, Georg; Netzer, Falko P.

2012-12-01

The interactions of glycine (Gly) with amorphous solid water (ASW) nanolayers (≤ 100 ML), vapor-deposited on single crystalline AlOx surfaces at 100 K, have been investigated by near-edge X-ray absorption fine structure spectroscopy (NEXAFS) at the oxygen K-edge, temperature-programmed thermal desorption (TPD), X-ray photoelectron spectroscopy (XPS), and temperature-dependent work function measurements. Gly-on-ASW, ASW-on-Gly, and Gly on top of ASW-on-Gly ultrathin films have been fabricated. In contrast to the uniform ASW films grown directly on the hydrophilic AlOx, water molecules adsorb on the hydrophobic Gly films in the form of 3D ASW clusters. This leads to significant differences in the NEXAFS and work function data obtained from ASW-on-AlOx and ASW-on-Gly films, respectively. Furthermore, these structural differences influence the chemical state of Gly molecules (neutral vs. zwitterionic) adsorbed on top of ASW films. N1s XPS measurements revealed an increased amount of neutral Gly molecules in the film top-deposited on the ASW-on-Gly structure in comparison to the neutral Gly in the films directly condensed on AlOx or grown on the ASW substrate. H2O TPD spectra demonstrate that the crystallization and desorption processes of ASW are affected in a different way by the Gly layers, top-deposited on to ASW-on-AlOx and ASW-on-Gly films. At the same time, Gly adlayers sink into the ASW film during crystallization/desorption of the latter and land softly on the alumina surface in the form of zwitterionic clusters.

Film growth arising from the deposition of Au onto an i-Al Pd Mn quasicrystal: a medium energy ion scattering study

NASA Astrophysics Data System (ADS)

Noakes, T. C. Q.; Bailey, P.; Draxler, M.; McConville, C. F.; Ross, A. R.; Lograsso, T. A.; Leung, L.; Smerdon, J. A.; McGrath, R.

2006-06-01

The room temperature deposition of 7 ML of Au onto the fivefold symmetric surface of icosahedral Al-Pd-Mn leads to the formation of a several monolayers thick Au-Al alloy film. An AlAu film with 1:1 stoichiometry is formed, which shows no evidence of ordered structure, being either amorphous or polycrystalline. Annealing to 325 °C causes more Al to diffuse into the film, producing Al2Au but still with no indication of structure. Experiments using 0.5 ML of pre-deposited In demonstrated a surfactant effect as the In 'floated' on the surface during growth and produced a reduction in film roughness. However, contrary to previous findings the film was still either amorphous or polycrystalline, with no evidence of quasi-crystalline or aperiodic structure. Experiments were also conducted using smaller doses of Au to look for the formation of an epitaxial layer and, if formed, determine the registry with the substrate. However, no change in the Pd blocking curves for the surface could be seen, suggesting that the Au does not adsorb in well defined sites. This result is not surprising when considering that even for these low doses Al is drawn into the film, changing the composition and probably the structure of the topmost layers of the substrate, so that the potential adsorption sites on the clean surface may no longer exist.

Depth profiling and morphological characterization of AlN thin films deposited on Si substrates using a reactive sputter magnetron

NASA Astrophysics Data System (ADS)

Macchi, Carlos; Bürgi, Juan; García Molleja, Javier; Mariazzi, Sebastiano; Piccoli, Mattia; Bemporad, Edoardo; Feugeas, Jorge; Sennen Brusa, Roberto; Somoza, Alberto

2014-08-01

It is well-known that the characteristics of aluminum nitride thin films mainly depend on their morphologies, the quality of the film-substrate interfaces and the open volume defects. A study of the depth profiling and morphological characterization of AlN thin films deposited on two types of Si substrates is presented. Thin films of thicknesses between 200 and 400 nm were deposited during two deposition times using a reactive sputter magnetron. These films were characterized by means of X-ray diffraction and imaging techniques (SEM and TEM). To analyze the composition of the films, energy dispersive X-ray spectroscopy was applied. Positron annihilation spectroscopy, specifically Doppler broadening spectroscopy, was used to gather information on the depth profiling of open volume defects inside the films and the AlN films-Si substrate interfaces. The results are interpreted in terms of the structural changes induced in the films as a consequence of changes in the deposition time (i.e., thicknesses) and of the orientation of the substrates.

Growth (AlCrNbSiTiV)N thin films on the interrupted turning and properties using DCMS and HIPIMS system

NASA Astrophysics Data System (ADS)

Chang, Kai-Sheng; Chen, Kuan-Ta; Hsu, Chun-Yao; Hong, Po-Da

2018-05-01

This paper determines the optimal settings in the deposition parameters for (AlCrNbSiTiV)N high-entropy alloy (HEAs) nitride films that are deposited on CBN cutting tools and glass substrates. We use direct current magnetron sputtering (DCMS) and high power impulse magnetron sputtering (HIPIMS), with Ar plasma and N2 reactive gases. Experiments with the grey-Taguchi method are conducted to determine the effect of deposition parameters (deposition time, substrate DC bias, DC power and substrate temperature) on interrupted turning 50CrMo4 steel machining and the films' structural properties. Experimental result shows that the multiple performance characteristics for these (AlCrNbSiTiV)N HEAs film coatings can be improved using the grey-Taguchi method. As can be seen, the coated film is homogeneous, very compact and exhibits perfect adherence to the substrate. The distribution of elements is homogeneous through the depth of the (AlCrNbSiTiV)N film, as measured by an auger electron nanoscope. After interrupted turning with an (AlCrNbSiTiV)N film coated tool, we obtain much longer tool life than when using uncoated tools. The correlation of these results with microstructure analysis and tool life indicates that HIPIMS discharge induced a higher (AlCrNbSiTiV)N film density, a smoother surface structure and a higher hardness surface.

Atomic layer deposition of Al2O3 on V2O5 xerogel film for enhanced lithium-ion intercalation stability

DOE Office of Scientific and Technical Information (OSTI.GOV)

Liu, Dawei; Liu, Yanyi; Candelaria, Stephanie L.

V2O5 xerogel films were fabricated by casting V2O5 sols onto fluorine-doped tin oxide glass substrates at room temperature. Five, ten and twenty atomic layers of Al2O3 were grown onto as-fabricated films respectively. The bare film and Al2O3-deposited films all exhibited hydrous V2O5 phase only. Electrochemical impedance spectroscopy study revealed increased surface charge-transfer resistance of V2O5 films as more Al2O3 atomic layers were deposited. Lithium-ion intercalation tests at 600 mAg_1 showed that bare V2O5 xerogel film possessed high initial discharge capacity of 219 mAhg_1 but suffered from severe capacity degradation, i.e., having only 136 mAhg_1 after 50 cycles. After deposition ofmore » ten atomic layers of Al2O3, the initial discharge capacity was 195 mAhg_1 but increased over cycles before stabilizing; after 50 cycles, the discharge capacity was as high as 225 mAhg_1. The noticeably improved cyclic stability of Al2O3-deposited V2O5 xerogel film could be attributed to the improved surface chemistry and enhanced mechanical strength. During repeated lithium-ion intercalation/de-intercalation, atomic layers of Al2O3 which were coated onto V2O5 surface could prevent V2O5 electrode dissolution into electrolyte by reducing direct contact between active electrode and electrolyte while at the same time acting as binder to maintain good mechanical contact between nanoparticles inside the film. VC 2012 American Vacuum Society.« less

Structural characterization of niobium oxide thin films grown on SrTiO3 (111) and (La,Sr)(Al,Ta)O3 (111) substrates

NASA Astrophysics Data System (ADS)

Dhamdhere, Ajit R.; Hadamek, Tobias; Posadas, Agham B.; Demkov, Alexander A.; Smith, David J.

2016-12-01

Niobium oxide thin films have been grown by molecular beam epitaxy on SrTiO3 (STO) (111) and (La0.18Sr0.82)(Al0.59Ta0.41)O3 (LSAT) (111) substrates. Transmission electron microscopy (TEM) confirmed the formation of high quality films with coherent interfaces. Films grown with higher oxygen pressure on STO (111) resulted in a (110)-oriented NbO2 phase with a distorted rutile structure, which can be described as body-centered tetragonal. The a lattice parameter of NbO2 was determined to be ˜13.8 Å in good agreement with neutron diffraction results published in the literature. Films grown on LSAT (111) at lower oxygen pressure produced the NbO phase with a defective rock salt cubic structure. The NbO lattice parameter was determined to be a ≈ 4.26 Å. The film phase/structure identification from TEM was in good agreement with in situ x-ray photoelectron spectroscopy measurements that confirmed the dioxide and monoxide phases, respectively. The atomic structure of the NbO2/STO and NbO/LSAT interfaces was determined based on comparisons between high-resolution electron micrographs and image simulations.

Determining oxide trapped charges in Al2O3 insulating films on recessed AlGaN/GaN heterostructures by gate capacitance transients measurements

NASA Astrophysics Data System (ADS)

Fiorenza, Patrick; Greco, Giuseppe; Schilirò, Emanuela; Iucolano, Ferdinando; Lo Nigro, Raffaella; Roccaforte, Fabrizio

2018-05-01

This letter presents time-dependent gate-capacitance transient measurements (C–t) to determine the oxide trapped charges (N ot) in Al2O3 films deposited on recessed AlGaN/GaN heterostructures. The C–t transients acquired at different temperatures under strong accumulation allowed to accurately monitor the gradual electron trapping, while hindering the re-emission by fast traps that may affect conventional C–V hysteresis measurements. Using this method, an increase of N ot from 2 to 6 × 1012 cm‑2 was estimated between 25 and 150 °C. The electron trapping is ruled by an Arrhenius dependence with an activation energy of 0.12 eV which was associated to points defects present in the Al2O3 films.

Enhancing Optical and Electrical Properties of La- and Al-Codoped ZnO Thin Films Prepared by Sol-Gel Method -La Codoping Effect.

PubMed

He-Yan, Hai

2017-07-10

Backgroud: The transparent conductive ZnO film is widely used in solar cell. Enhancing the transmittance and electrical conductivity of the films is attracting many attentions to improve cell efficiency. This work focuses on the fabrication and potential application of the various cation-doped ZnO materials in recent patents and literature and then presents the La codoping effects of Al-doped ZnO films. Films were deposited by a sol-gel route and characterized by various techniques including X-ray diffraction, scanning electron microscopy, energy dispersive spectroscopy, UV-vis and luminescent spectroscopies, and electrical conduction analysis. The UV-vis. transmittance and band gap increased and then decreased, whereas the resistivity decreased and then slightly increased with the increase in La/Al ratio. The La/Al ratio of 0.0105 led to a maximal transmittance, a widest band gap, and a minimal resistivity. The films also illustrated a near band gap emission and some intrinsic defect-related emissions with varied intensity with La/Al ratio. This work reveal that the electrical and optical properties of the ZnO:Al films can be well enhanced by La codoping. This is significant to the applications of the ZnO:Al materials. Copyright© Bentham Science Publishers; For any queries, please email at epub@benthamscience.org.

Oxidation precursor dependence of atomic layer deposited Al2O3 films in a-Si:H(i)/Al2O3 surface passivation stacks.

PubMed

Xiang, Yuren; Zhou, Chunlan; Jia, Endong; Wang, Wenjing

2015-01-01

In order to obtain a good passivation of a silicon surface, more and more stack passivation schemes have been used in high-efficiency silicon solar cell fabrication. In this work, we prepared a-Si:H(i)/Al2O3 stacks on KOH solution-polished n-type solar grade mono-silicon(100) wafers. For the Al2O3 film deposition, both thermal atomic layer deposition (T-ALD) and plasma enhanced atomic layer deposition (PE-ALD) were used. Interface trap density spectra were obtained for Si passivation with a-Si films and a-Si:H(i)/Al2O3 stacks by a non-contact corona C-V technique. After the fabrication of a-Si:H(i)/Al2O3 stacks, the minimum interface trap density was reduced from original 3 × 10(12) to 1 × 10(12) cm(-2) eV(-1), the surface total charge density increased by nearly one order of magnitude for PE-ALD samples and about 0.4 × 10(12) cm(-2) for a T-ALD sample, and the carrier lifetimes increased by a factor of three (from about 10 μs to about 30 μs). Combining these results with an X-ray photoelectron spectroscopy analysis, we discussed the influence of an oxidation precursor for ALD Al2O3 deposition on Al2O3 single layers and a-Si:H(i)/Al2O3 stack surface passivation from field-effect passivation and chemical passivation perspectives. In addition, the influence of the stack fabrication process on the a-Si film structure was also discussed in this study.

Ni-Al films induced surface modification of La2Mg17 alloy leading to improved dehydrogenation properties

NASA Astrophysics Data System (ADS)

Zhang, Huaiwei; Fu, Li; Xuan, Weidong; Qin, Haiying; Ji, Zhenguo

2018-05-01

The effects of surface coating with Ni-Al nano-films to the hydrogenation properties of the La2Mg17 alloy are studied in the paper. The reversible hydrogen storage capacities, thermodynamics and kinetics process are all improved for the coating samples, and the comprehensive performances reach the best when the sputtering time is 5min with the film thickness 71.7 nm. The dehydrogenation temperature of the coating sample can be reduced to about 560K from above 720K comparing to the body alloy. The XPS analysis shows that the Ni-Al film coating layer can act as the catalyst in the dehydrogenation process.

Effect of TiO2/Al2O3 film coated diamond abrasive particles by sol-gel technique

NASA Astrophysics Data System (ADS)

Hu, Weida; Wan, Long; Liu, Xiaopan; Li, Qiang; Wang, Zhiqi

2011-04-01

The diamond abrasive particles were coated with the TiO2/Al2O3 film by the sol-gel technique. Compared with the uncoated diamonds, the TiO2/Al2O3 film was excellent material for the protection of the diamonds. The results showed that the incipient oxidation temperature of the TiO2/Al2O3 film coated diamonds in air atmosphere was 775 °C, which was higher 175 °C than that of the uncoated diamonds. And the coated diamonds also had better the diamond's single particle compressive strength and the impact toughness than that of uncoated diamonds after sintering at 750 °C. For the vitrified bond grinding wheels, replacing the uncoated diamonds with the TiO2/Al2O3 film coated diamonds, the volume expansion of the grinding wheels decreased from 6.2% to 3.4%, the porosity decreased from 35.7% to 25.7%, the hardness increased from 61.2HRC to 66.5HRC and the grinding ratio of the vitrified bond grinding wheels to carbide alloy (YG8) increased from 11.5 to 19.1.

Development of non-flammable lithium secondary battery with room-temperature ionic liquid electrolyte: Performance of electroplated Al film negative electrode

NASA Astrophysics Data System (ADS)

Ui, Koichi; Yamamoto, Keigo; Ishikawa, Kohei; Minami, Takuto; Takeuchi, Ken; Itagaki, Masayuki; Watanabe, Kunihiro; Koura, Nobuyuki

The negative electrode performance of the electroplated Al film electrode in the LiCl saturated AlCl 3-1-ethyl-3-methylimizadolium chloride (EMIC) + SOCl 2 melt as the electrolyte for use in non-flammable lithium secondary batteries was evaluated. In the cyclic voltammogram of the electroplated Al film electrode in the melt, the oxidation and reduction waves corresponding to the electrochemical insertion/extraction reactions of the Li + ion were observed at 0-0.80 V vs. Li +/Li, which suggested that the electroplated Al film electrode operated well in the electrolyte. The almost flat potential profiles at about 0.40 V vs. Li +/Li on discharging were shown. The discharge capacity and charge-discharge efficiency was 236 mAh g -1 and 79.2% for the 1st cycle and it maintained 232 mAh g -1 and 77.9% after the 10th cycle. In addition, the initial charge-discharge efficiencies of the electroplated Al film electrode were higher than that of carbon electrodes. The main cathodic polarization reaction was the insertion of Li + ions, and side reactions hardly occurred due to the decomposition reaction of the melt because the Li content corresponding to the electricity was almost totally inserted into the film after charging.

Electron-stimulated reactions in nanoscale water films adsorbed on α-Al 2O 3 (0001)

DOE Office of Scientific and Technical Information (OSTI.GOV)

Petrik, Nikolay G.; Kimmel, Gregory A.

The radiation-induced decomposition and desorption of nanoscale amorphous solid water (D2O) films adsorbed on -Al2O3(0001) surface was studied at low temperature in ultrahigh vacuum using temperature programmed desorption (TPD) and electron stimulated desorption (ESD) with a mono-energetic, low energy electron source. ESD yields of molecular products ( D2, O2 and D¬2O) and the total sputtering yield increased with increasing D2O coverage up to ~15 water monolayers (i.e. ~15 1015 cm-2) to a coverage-independent level for thicker water films. Experiments with isotopically-layered water films (D2O and H2O) demonstrated that the highest water decomposition yields occurred at the interfaces of the nanoscalemore » water films with the alumina substrate and vacuum. However, the increased reactivity of the water/alumina interface is relatively small compared to the enhancements in the non-thermal reactions previously observed at the water/Pt(111) and water/TiO2(110) interfaces. We propose that the relatively low activity of Al2O3(0001) for the radiation-induced production of molecular hydrogen is associated with lower reactivity of this surface with hydrogen atoms, which are likely precursors for the molecular hydrogen.100 eV electrons are stopped in the H 2O portion of the isotopically-layered nanoscale film on α-Al 2O 3(0001) but D 2is produced at the D 2O/alumina interface by mobile electronic excitations and/or hydronium ions.« less

Initial growth, refractive index, and crystallinity of thermal and plasma-enhanced atomic layer deposition AlN films

DOE Office of Scientific and Technical Information (OSTI.GOV)

Van Bui, Hao, E-mail: H.VanBui@utwente.nl; Wiggers, Frank B.; Gupta, Anubha

2015-01-01

The authors have studied and compared the initial growth and properties of AlN films deposited on Si(111) by thermal and plasma-enhanced atomic layer deposition (ALD) using trimethylaluminum and either ammonia or a N{sub 2}-H{sub 2} mixture as precursors. In-situ spectroscopic ellipsometry was employed to monitor the growth and measure the refractive index of the films during the deposition. The authors found that an incubation stage only occurred for thermal ALD. The linear growth for plasma-enhanced ALD (PEALD) started instantly from the beginning due to the higher nuclei density provided by the presence of plasma. The authors observed the evolution ofmore » the refractive index of AlN during the growth, which showed a rapid increase up to a thickness of about 30 nm followed by a saturation. Below this thickness, higher refractive index values were obtained for AlN films grown by PEALD, whereas above that the refractive index was slightly higher for thermal ALD films. X-ray diffraction characterization showed a wurtzite crystalline structure with a (101{sup ¯}0) preferential orientation obtained for all the layers with a slightly better crystallinity for films grown by PEALD.« less

P-type Al-doped Cr-deficient CrN thin films for thermoelectrics

NASA Astrophysics Data System (ADS)

le Febvrier, Arnaud; Van Nong, Ngo; Abadias, Gregory; Eklund, Per

2018-05-01

Thermoelectric properties of chromium nitride (CrN)-based films grown on c-plane sapphire by dc reactive magnetron sputtering were investigated. In this work, aluminum doping was introduced in CrN (degenerate n-type semiconductor) by co-deposition. Under the present deposition conditions, over-stoichiometry in nitrogen (CrN1+δ) rock-salt structure is obtained. A p-type conduction is observed with nitrogen-rich CrN combined with aluminum doping. The Cr0.96Al0.04N1.17 film exhibited a high Seebeck coefficient and a sufficient power factor at 300 °C. These results are a starting point for designing p-type/n-type thermoelectric materials based on chromium nitride films, which are cheap and routinely grown on the industrial scale.

Microstructure evolution of Al-doped zinc oxide films prepared by in-line reactive mid-frequency magnetron sputtering

NASA Astrophysics Data System (ADS)

Hong, R. J.; Jiang, X.

2006-07-01

Aluminium-doped zinc oxide (ZnO:Al or AZO) thin films were deposited on glass substrates by reactive mid-frequency (MF) magnetron sputtering from Zn/Al metallic targets. Strong (002) preferred orientation was detected by X-ray diffraction (XRD). It was observed by plan-view transmission electron microscopy (TEM) that an AZO film deposited at low substrate temperature was composed of irregular large grains; but the film prepared at high temperature was composed of moderate sized grains with a regular shape. A secondary phase of ZnO2 was also observed for the film deposited at low substrate temperature. The cross-sectional TEM study of the AZO film showed that prior to the well-aligned columnar growth an initial interfacial zone with nano crystallites were formed. The nano crystallites formed initially with a large tilt angle normal to the substrate surface and during the growth of the transition zone, the tilt angle decreased until it vanished. The evolution of the film structure is discussed in terms of evolutionary selection model and the dynamic deposition process.

Structure and reaction properties of thin Al films deposited on Ni(110)

NASA Astrophysics Data System (ADS)

Hahn, Peter; Bertino, Massimo F.; Toennies, J. Peter; Ritter, Michael; Weiss, Werner

1998-09-01

A variety of experimental techniques, including scanning tunneling microscopy (STM) and thermal desorption spectroscopy (TDS) have been used to investigate the structure and reaction properties of thin Al films on Ni(110) as a model for technical Raney nickel catalysts. The measurements show that Al grows by the Volmer-Weber growth mode, with Al islands reaching a height of 30 Å before the first Al layer is completed. On exposure to deuterium the TDS spectra indicate that the addition of Al produces a new deuterium chemisorption state with a desorption energy which decreases from 27 to 14 kJ/mol with increasing deuterium coverage. This new bound state is attributed to deuterium atoms bound to adsorption sites in the vicinity of Al islands. Thermal desorption measurements also reveal that the deuterium initial sticking coefficient S0 decreases with Al coverage. The results can be explained by a simple model which shows that for low Al coverages each Al island inhibits deuterium dissociation in a region which is about three times larger than the island area.

Surface plasmon resonance in electrodynamically coupled Au NPs monolayer/dielectric spacer/Al film nanostructure: tuning by variation of spacer thickness

NASA Astrophysics Data System (ADS)

Yeshchenko, Oleg A.; Kozachenko, Viktor V.; Liakhov, Yuriy F.; Tomchuk, Anastasiya V.; Haftel, Michael; Pinchuk, Anatoliy O.

2017-10-01

Effects of plasmonic coupling between metal nanoparticles and thin metal films separated by thin dielectric film-spacers have been studied by means of light extinction in three-layer planar Au NPs monolayer/dielectric (shellac) film/Al film nanostructure. The influence of coupling on the spectral characteristics of the Au NPs SPR extinction peak has been analyzed with spacer thickness, varied from 3 to 200 nm. The main observed features are a strong red shift (160 nm), and non-monotonical behavior of the magnitude and width of Au NPs SPR, as the spacer thickness decreased. The appearance of an intensive gap mode peak was observed at a spacer thickness smaller than approximately 30 nm, caused by the hybridization of the Au NPs SPR mode and gap mode in the presence of the Al film. Additionally, the appreciable enhancement (5.6 times) of light extinction by the Au NPs monolayer in the presence of Al film has been observed. A certain value of dielectric spacer thickness (70 nm) exists at which such enhancement is maximal.

Rapid Growth of Nanostructured Diamond Film on Silicon and Ti-6Al-4V Alloy Substrates.

PubMed

Samudrala, Gopi K; Vohra, Yogesh K; Walock, Michael J; Miles, Robin

2014-01-13

Nanostructured diamond (NSD) films were grown on silicon and Ti-6Al-4V alloy substrates by microwave plasma chemical vapor deposition (MPCVD). NSD Growth rates of 5 µm/h on silicon, and 4 µm/h on Ti-6Al-4V were achieved. In a chemistry of H₂/CH₄/N₂, varying ratios of CH₄/H₂ and N₂/CH₄ were employed in this research and their effect on the resulting diamond films were studied by X-ray photoelectron spectroscopy, Raman spectroscopy, scanning electron microscopy, and atomic force microscopy. As a result of modifying the stock cooling stage of CVD system, we were able to utilize plasma with high power densities in our NSD growth experiments, enabling us to achieve high growth rates. Substrate temperature and N₂/CH₄ ratio have been found to be key factors in determining the diamond film quality. NSD films grown as part of this study were shown to contain 85% to 90% sp³ bonded carbon.

Study of the optical properties of CuAlS2 thin films prepared by two methods

NASA Astrophysics Data System (ADS)

Ahmad, S. M.

2017-04-01

CuAlS2 thin films were successfully deposited on glass substrates using two methods: chemical spray pyrolysis (CSP) and chemical bath deposition (CBD). It was confirmed from the X-ray diffraction (XRD) analysis that CSP films exhibited a polycrystalline nature while amorphous nature was diagnosed for CBD films. Also XRD analysis was utilized to compute grain size, strain and dislocation density. Surface morphology was characterized using scanning electron microscope and photomicroscope images. The optical absorption measurement revealed that the direct allowed electronic transition with band gaps 2.8 eV and 3.0 eV for CBD and CSP methods, respectively. The optical constants, such as extinction coefficient ( k), refractive index ( n), real and imaginary dielectric constants ( ɛ 1, ɛ 2) were discussed. The photoluminescence (PL) spectra of CuAlS2 thin films appeared as a single peak for each of them, and this is attributed to band-to-band transition.

Room Temperature Thin Film Ba(x)Sr(1-x)TiO3 Ku-Band Coupled MicrostripPhase Shifters: Effects of Film Thickness, Doping, Annealing and Substrate Choice

NASA Technical Reports Server (NTRS)

VanKeuls, F. W.; Mueller, C. H.; Miranda, F. A.; Romanofsky, R. R.; Canedy, C. L.; Aggarwal, S.; Venkatesan, T.; Ramesh, R.; Horwitz, S.; Chang, W.

1999-01-01

We report on measurements taken on over twenty Ku-band coupled microstrip phase shifters (CMPS) using thin ferroelectric films of Ba(x)Sr(1-x)TiO3. This CMPS design is a recent innovation designed to take advantage of the high tunability and tolerate the high dielectric constant of ferroelectric films at Ku- and K-band frequencies. These devices are envisioned as a component in low-cost steerable beam phased area antennas, Comparisons are made between devices with differing film thickness, annealed vs unannealed, Mn-doped vs. undoped, and also substrates of LaAlO3 and MgO. A comparison between the CMPS structure and a CPW phase shifter was also made oil the same ferroelectric film.

Fabrication and application of mesoporous TiO2 film coated on Al wire by sol-gel method with EISA

NASA Astrophysics Data System (ADS)

Zhao, Linkang; Lu, Jianjun

2017-04-01

Mesoporous TiO2 film on Al wire was fabricated by sol-gel method with evaporation induced self assembly (EISA) process using F127 as templating agent in the mixed solution of ethanol and Tetra-n-butyl Titanate. The Ni/TiO2 film catalyst supported on Al wire was prepared by impregnation and the catalytic performance on methanation was carried out in a titanium alloy micro-reactor tube. It was shown that anatase mesoporous TiO2 film was prepared in this conditions (1 g F127,calcined at 400 °C and aged for 24 h), which has specific surface area of 127 m2 g-1 and narrow pore size distribution of 5.3 nm. Low calcined temperature (300 °C) cannot transfer film to anatase and decompose F127 completely. Ni/TiO2 film on Al wire catalyst was proved to be active in CO methanation reaction. And the CO conversion reaches 99% and CH4 selectivity close is to 80% when the reaction temperature is higher 360 °C.

Electrical characterization of γ-Al2O3 thin film parallel plate capacitive sensor for trace moisture detection

NASA Astrophysics Data System (ADS)

Kumar, Lokesh; Kumar, Shailesh; Khan, S. A.; Islam, Tariqul

2012-10-01

A moisture sensor was fabricated based on porous thin film of γ-Al2O3 formed between the parallel gold electrodes. The sensor works on capacitive technique. The sensing film was fabricated by dipcoating of aluminium hydroxide sol solution obtained from the sol-gel method. The porous structure of the film of γ-Al2O3 phase was obtained by sintering the film at 450 °C for 1 h. The electrical parameters of the sensor have been determined by Agilent 4294A impedance analyzer. The sensor so obtained is found to be sensitive in moisture range 100-600 ppmV. The response time of the sensor in ppmV range moisture is very low ~ 24 s and recovery time is ~ 37 s.

Nanocrystalline high-entropy alloy (CoCrFeNiAl 0.3 ) thin-film coating by magnetron sputtering

DOE Office of Scientific and Technical Information (OSTI.GOV)

Liao, Weibing; Lan, Si; Gao, Libo

High-entropy CoCrFeNiAl0.3 alloy thin films were prepared by magnetron sputtering technique. The thin film surface was very smooth and homogeneous. The synchrotron X-ray experiment confirmed that (111) type of texture existed in the thin film, and the structure was face-centered cubic nanocrystals with a minor content of ordered NiAl-type body-centered cubic structures. Interestingly, the elastic modulus of the thin film was nearly the same to the bulk single-crystal counterpart, however, the nanohardness is about four times of the bulk single-crystal counterpart. It was found that the high hardness was due to the formation of nanocrystal structure inside the thin filmsmore » and the preferred growth orientation, which could be promising for applications in micro fabrication and advanced coating technologies.« less

Partial ablation of Ti/Al nano-layer thin film by single femtosecond laser pulse

NASA Astrophysics Data System (ADS)

Gaković, B.; Tsibidis, G. D.; Skoulas, E.; Petrović, S. M.; Vasić, B.; Stratakis, E.

2017-12-01

The interaction of ultra-short laser pulses with Titanium/Aluminium (Ti/Al) nano-layered thin film was investigated. The sample composed of alternating Ti and Al layers of a few nanometres thick was deposited by ion-sputtering. A single pulse irradiation experiment was conducted in an ambient air environment using focused and linearly polarized femtosecond laser pulses for the investigation of the ablation effects. The laser induced morphological changes and the composition were characterized using several microscopy techniques and energy dispersive X-ray spectroscopy. The following results were obtained: (i) at low values of pulse energy/fluence, ablation of the upper Ti layer only was observed; (ii) at higher laser fluence, a two-step ablation of Ti and Al layers takes place, followed by partial removal of the nano-layered film. The experimental observations were supported by a theoretical model accounting for the thermal response of the multiple layered structure upon irradiation with ultra-short laser pulses.

Optical and structural properties of Al-doped ZnO thin films by sol gel process.

PubMed

Jun, Min-Chul; Koh, Jung-Hyuk

2013-05-01

Transparent conducting oxide (TCO) materials with high transmittance and good electrical conductivity have been attracted much attention due to the development of electronic display and devices such as organic light emitting diodes (OLEDs), and dye-sensitized solar cells (DSSCs). Aluminum doped zinc oxide thin films (AZO) have been well known for their use as TCO materials due to its stability, cost-effectiveness, good optical transmittance and electrical properties. Especially, AZO thin film, which have low resistivity of 2-4 x 10(-4) omega x cm which is similar to that of ITO films with wide band gap semiconductors. The AZO thin films were deposited on glass substrates by sol-gel spin-coating process. As a starting material, zinc acetate dihydrate (Zn(CH3COO)2 x 2H2O) and aluminum chloride hexahydrate (AlCl3 6H2O) were used. 2-methoxyethanol and monoethanolamine (MEA) were used as solvent and stabilizer, respectively. After deposited, the films were preheated at 300 degrees C on a hotplate and post-heated at 650 degrees C for 1.5 hrs in the furnace. We have studied the structural and optical properties as a function of Al concentration (0-2.5 mol.%).

Effect of solvents on sol-gel spin-coated nanostructured Al-doped ZnO thin films: a film for key optoelectronic applications

NASA Astrophysics Data System (ADS)

Kumar, K. Deva Arun; Valanarasu, S.; Kathalingam, A.; Ganesh, V.; Shkir, Mohd.; AlFaify, S.

2017-12-01

Aluminum-doped zinc oxide (AZO) thin films were deposited by sol-gel spin coating technique onto the glass substrates using different solvents such as 2-methoxyethanol, methanol, ethanol and isopropanol. Prepared films were characterized by XRD, Raman spectrum, SEM, UV-visible spectrophotometer, photoluminescence (PL) and electrical studies. XRD studies showed that all the prepared films are hexagonal wurtzite structure with polycrystalline nature oriented along (002) direction. SEM images showed uniform particles of size around 60 nm distributed regularly on to the entire glass substrate. EDX analysis confirmed the composition of grown AZO film consisting of Al, Zn and O elements. The prepared films showed highest optical transmittance 94% in the visible range and band gap 3.30 eV. PL spectra for all AZO films showed a strong UV emission peak at 387 nm. The AZO films prepared using isopropanol solvent showed high carrier concentration and low resistivity values as 1.72 × 1020 cm-3 and 2.90 × 10-3 Ω cm, respectively, with high figure of merit ( ϕ) value 8.42 × 10-3 (Ω/sq)-1.

Heavily-doped ZnO:Al thin films prepared by using magnetron Co-sputtering: Optical and electrical properties

NASA Astrophysics Data System (ADS)

Moon, Eun-A.; Jun, Young-Kil; Kim, Nam-Hoon; Lee, Woo-Sun

2016-07-01

Photovoltaic applications require transparent conducting-oxide (TCO) thin films with high optical transmittance in the visible spectral region (380 - 780 nm), low resistivity, and high thermal/chemical stability. The ZnO thin film is one of the most common alternatives to the conventional indium-tin-oxide (ITO) thin film TCO. Highly transparent and conductive ZnO thin films can be prepared by doping with group III elements. Heavily-doped ZnO:Al (AZO) thin films were prepared by using the RF magnetron co-sputtering method with ZnO and Al targets to obtain better characteristics at a low cost. The RF sputtering power to each target was varied to control the doping concentration in fixed-thickness AZO thin films. The crystal structures of the AZO thin films were analyzed by using X-ray diffraction. The morphological microstructure was observed by using scanning electron microscopy. The optical transmittance and the band gap energy of the AZO thin films were examined with an UV-visible spectrophotometer in the range of 300 - 1800 nm. The resistivity and the carrier concentration were examined by using a Hall-effect measurement system. An excellent optical transmittance > 80% with an appropriate band gap energy (3.26 - 3.27 eV) and an improved resistivity (~10 -1 Ω·cm) with high carrier concentration (1017 - 1019 cm -3) were demonstrated in 350-nm-thick AZO thin films for thin-film photovoltaic applications.

Uniformity and passivation research of Al2O3 film on silicon substrate prepared by plasma-enhanced atom layer deposition.

PubMed

Jia, Endong; Zhou, Chunlan; Wang, Wenjing

2015-01-01

Plasma-enhanced atom layer deposition (PEALD) can deposit denser films than those prepared by thermal ALD. But the improvement on thickness uniformity and the decrease of defect density of the films deposited by PEALD need further research. A PEALD process from trimethyl-aluminum (TMA) and oxygen plasma was investigated to study the influence of the conditions with different plasma powers and deposition temperatures on uniformity and growth rate. The thickness and refractive index of films were measured by ellipsometry, and the passivation effect of alumina on n-type silicon before and after annealing was measured by microwave photoconductivity decay method. Also, the effects of deposition temperature and annealing temperature on effective minority carrier lifetime were investigated. Capacitance-voltage and conductance-voltage measurements were used to investigate the interface defect density of state (D it) of Al2O3/Si. Finally, Al diffusion P(+) emitter on n-type silicon was passivated by PEALD Al2O3 films. The conclusion is that the condition of lower substrate temperature accelerates the growth of films and that the condition of lower plasma power controls the films' uniformity. The annealing temperature is higher for samples prepared at lower substrate temperature in order to get the better surface passivation effects. Heavier doping concentration of Al increased passivation quality after annealing by the effective minority carrier lifetime up to 100 μs.

Fabrication of ultrathin MIL-96(Al) films and study of CO2 adsorption/desorption processes using quartz crystal microbalance.

PubMed

Andrés, Miguel A; Benzaqui, M; Serre, C; Steunou, N; Gascón, I

2018-06-01

This contribution reports the fabrication and characterization of ultrathin films of nanoparticles of the water stable microporous Al tricarboxylate metal organic framework MIL-96(Al). The preparation of MOF dispersions in chloroform has been optimized to obtain dense monolayer films of good quality, without nanoparticle agglomeration, at the air-water interface that can be deposited onto solid substrates of different nature without any previous substrate functionalization. The MOF studied shows great interest for CO 2 capture because it presents Al 3+ Lewis centers and hydroxyl groups that strongly interact with CO 2 molecules. A comparative CO 2 adsorption study on drop-cast, Langmuir-Blodgett (LB) and Langmuir-Schaefer (LS) films using a Quartz Crystal Microbalance-based setup (QCM) has revealed that the CO 2 uptake depends strongly on the film fabrication procedure and the storage conditions. Noteworthy the CO 2 adsorption capacity of LB films is increased by 30% using a simple and green treatment (immersion of the film into water during 12 h just after film preparation). Finally, the stability of LB MOF monolayers upon several CO 2 adsorption/desorption cycles has been demonstrated, showing that CO 2 can be easily desorbed from the films at 303 K by flowing an inert gas (He). These results show that MOF LB monolayers can be of great interest for the development of MOF-based devices that require the use of very small MOF quantities, especially gas sensors. Copyright © 2018 Elsevier Inc. All rights reserved.

Dopant Distribution in Atomic Layer Deposited ZnO:Al Films Visualized by Transmission Electron Microscopy and Atom Probe Tomography.

PubMed

Wu, Yizhi; Giddings, A Devin; Verheijen, Marcel A; Macco, Bart; Prosa, Ty J; Larson, David J; Roozeboom, Fred; Kessels, Wilhelmus M M

2018-02-27

The maximum conductivity achievable in Al-doped ZnO thin films prepared by atomic layer deposition (ALD) is limited by the low doping efficiency of Al. To better understand the limiting factors for the doping efficiency, the three-dimensional distribution of Al atoms in the ZnO host material matrix has been examined on the atomic scale using a combination of high-resolution transmission electron microscopy (TEM) and atom probe tomography (APT). Although the Al distribution in ZnO films prepared by so-called "ALD supercycles" is often presented as atomically flat δ-doped layers, in reality a broadening of the Al-dopant layers is observed with a full-width-half-maximum of ∼2 nm. In addition, an enrichment of the Al at grain boundaries is observed. The low doping efficiency for local Al densities > ∼1 nm -3 can be ascribed to the Al solubility limit in ZnO and to the suppression of the ionization of Al dopants from adjacent Al donors.

Structural, optical, morphological and electrical properties of undoped and Al-doped ZnO thin films prepared using sol—gel dip coating process

NASA Astrophysics Data System (ADS)

Boukhenoufa, N.; Mahamdi, R.; Rechem, D.

2016-11-01

In this work, sol—gel dip-coating technique was used to elaborate ZnO pure and ZnO/Al films. The impact of Al-doped concentration on the structural, optical, surface morphological and electrical properties of the elaborated samples was investigated. It was found that better electrical and optical performances have been obtained for an Al concentration equal to 5%, where the ZnO thin films exhibit a resistivity value equal to 1.64104 Ω·cm. Moreover, highest transparency has been recorded for the same Al concentration value. The obtained results from this investigation make the developed thin film structure a potential candidate for high optoelectronic performance applications.

Annealing effects on electron-beam evaporated Al 2O 3 films

NASA Astrophysics Data System (ADS)

Shuzhen, Shang; Lei, Chen; Haihong, Hou; Kui, Yi; Zhengxiu, Fan; Jianda, Shao

2005-04-01

The effects of post-deposited annealing on structure and optical properties of electron-beam evaporated Al 2O 3 single layers were investigated. The films were annealed in air for 1.5 h at different temperatures from 250 to 400 °C. The optical constants and cut-off wavelength were deduced. Microstructure of the samples was characterized by X-ray diffraction (XRD). Profile and surface roughness measurement instrument was used to determine the rms surface roughness. It was found that the cut-off wavelength shifted to short wavelength as the annealing temperature increased and the total optical loss decreased. The film structure remained amorphous even after annealing at 400 °C temperature and the samples annealed at higher temperature had the higher rms surface roughness. The decreasing total optical loss with annealing temperature was attributed to the reduction of absorption owing to oxidation of the film by annealing. Guidance to reduce the optical loss of excimer laser mirrors was given.

Image reconstruction algorithm for optically stimulated luminescence 2D dosimetry using laser-scanned Al2O3:C and Al2O3:C,Mg films

NASA Astrophysics Data System (ADS)

Ahmed, M. F.; Schnell, E.; Ahmad, S.; Yukihara, E. G.

2016-10-01

The objective of this work was to develop an image reconstruction algorithm for 2D dosimetry using Al2O3:C and Al2O3:C,Mg optically stimulated luminescence (OSL) films imaged using a laser scanning system. The algorithm takes into account parameters associated with detector properties and the readout system. Pieces of Al2O3:C films (~8 mm  ×  8 mm  ×  125 µm) were irradiated and used to simulate dose distributions with extreme dose gradients (zero and non-zero dose regions). The OSLD film pieces were scanned using a custom-built laser-scanning OSL reader and the data obtained were used to develop and demonstrate a dose reconstruction algorithm. The algorithm includes corrections for: (a) galvo hysteresis, (b) photomultiplier tube (PMT) linearity, (c) phosphorescence, (d) ‘pixel bleeding’ caused by the 35 ms luminescence lifetime of F-centers in Al2O3, (e) geometrical distortion inherent to Galvo scanning system, and (f) position dependence of the light collection efficiency. The algorithm was also applied to 6.0 cm  ×  6.0 cm  ×  125 μm or 10.0 cm  ×  10.0 cm  ×  125 µm Al2O3:C and Al2O3:C,Mg films exposed to megavoltage x-rays (6 MV) and 12C beams (430 MeV u-1). The results obtained using pieces of irradiated films show the ability of the image reconstruction algorithm to correct for pixel bleeding even in the presence of extremely sharp dose gradients. Corrections for geometric distortion and position dependence of light collection efficiency were shown to minimize characteristic limitations of this system design. We also exemplify the application of the algorithm to more clinically relevant 6 MV x-ray beam and a 12C pencil beam, demonstrating the potential for small field dosimetry. The image reconstruction algorithm described here provides the foundation for laser-scanned OSL applied to 2D dosimetry.

Stabilization of Hydrogen Production via Methanol Steam Reforming in Microreactor by Al2O3 Nano-Film Enhanced Catalyst Adhesion.

PubMed

Jeong, Heondo; Na, Jeong-Geol; Jang, Min Su; Ko, Chang Hyun

2016-05-01

In hydrogen production by methanol steam reforming reaction with microchannel reactor, Al2O3 thin film formed by atomic layer deposition (ALD) was introduced on the surface of microchannel reactor prior to the coating of catalyst particles. Methanol conversion rate and hydrogen production rate, increased in the presence of Al2O3 thin film. Over-view and cross-sectional scanning electron microscopy study showed that the adhesion between catalyst particles and the surface of microchannel reactor enhanced due to the presence of Al2O3 thin film. The improvement of hydrogen production rate inside the channels of microreactor mainly came from the stable fixation of catalyst particles on the surface of microchannels.

Formation of CuAlO2 Film by Ultrasonic Spray Pyrolysis

NASA Astrophysics Data System (ADS)

Iping, S.; Lockman, Zainovia; Hutagalung, S. D.; Kamsul, A.; Matsuda, Atsunori

2011-10-01

Smooth, crack free and homogenous CuAlO2 film was produced by chemical solution deposition process via spray pyrolysis technique on a cleaned Si substrate. The precursor solution used was comprised of a mixture of 45.87 mmol Cu(NO3)2.3H2O and 90 mmol Al(NO3)3.9H2O at ratio of Cu:Al = 1.2:1. The precursor solution was placed in a mist chamber and was atomized by a nebulizer to produce precursor mist. The precursor mist was then carried out by Ar gas and was sprayed onto a heated Si. Two main parameters were studied: the distance between the nozzle of the precursor mist chamber and the Si and the temperature of the Si substrate. It appears that from the XRD data, CuAlO2 can be detected for samples prepared by spraying the precursor mist at temperature of > 550 °C with distance between the nozzle and the substrate of 3cm. Reaction of the Cu and Al ions in the mist near the substrate may have promoted the crystallisation of CuAlO2.

Influence of Al content on the properties of ternary Al{sub 2x}In{sub 2−2x}O{sub 3} alloy films prepared on YSZ (1 1 1) substrates by MOCVD

DOE Office of Scientific and Technical Information (OSTI.GOV)

Feng, Xianjin; Zhao, Cansong; Li, Zhao

2015-10-15

Highlights: • Al{sub 2x}In{sub 2−2x}O{sub 3} films were prepared on the Y-stabilized ZrO{sub 2} (1 1 1) substrates by MOCVD at 700 °C. • A phase transition from the bixbyite In{sub 2}O{sub 3} structure to the amorphous structure was observed. • The lowest resistivity of 4.7 × 10{sup −3} Ω cm was obtained for the Al{sub 0.4}In{sub 1.6}O{sub 3} film. • Tunable optical band gap from 3.7 to 4.8 eV was obtained. - Abstract: The ternary Al{sub 2x}In{sub 2−2x}O{sub 3} films with different Al contents of x [Al/(Al + In) atomic ratio] have been fabricated on the Y-stabilized ZrO{sub 2}more » (1 1 1) substrates by metal organic chemical vapor deposition at 700 °C. The structural, electrical and optical properties of the films as a result of different Al contents (x = 0.1–0.9) were investigated in detail. With the increase of Al content from 10% to 90%, a phase transition from the bixbyite In{sub 2}O{sub 3} structure with a single orientation along (1 1 1) to the amorphous structure was observed. The minimum resistivity of 4.7 × 10{sup −3} Ω cm, a carrier concentration of 1.4 × 10{sup 20} cm{sup −3} and a Hall mobility of 9.8 cm{sup 2} v{sup −1} s{sup −1} were obtained for the sample with x = 0.2. The average transmittances for the Al{sub 2x}In{sub 2−2x}O{sub 3} films in the visible range were all over 78% and the optical band gap of the films could be tuned from 3.7 to 4.8 eV.« less

A DFT study on the failure mechanism of Al2O3 film by various point defects in solution

NASA Astrophysics Data System (ADS)

Zhang, Chuan-Hui; Chen, Bao; Jin, Ying; Sun, Dong-Bai

2018-03-01

The defects on oxide film surface are very important, and they would occur when the film is peeled or scratched. The periodic DFT calculations have been performed on Al2O3 surface to model the influences of various point-defects. Three kinds of point defect surfaces (vacancy, inversion, substitution) are considered, and the molecular H2O dissociation and the transition state are calculated. The predicted formation energy of O vacancy is 8.30 eV, whereas that corresponding to the formation of Al vacancy is found to be at least a 55% larger. On the vacancy point defect surfaces, upward H2O molecule surfaces prefer to occur chemical reaction, leading the surfaces to be hydroxylated. And then the D-Cl-substitution-Al surface is corroded, which suggests a Cl adsorption induced failure mechanism of the oxide film. At last, the process of H2O dissociation on the OH-substitution-Al surfaces with four or five transition paths are discussed.

Improvement of Self-Heating of Indium Gallium Zinc Aluminum Oxide Thin-Film Transistors Using Al2O3 Barrier Layer

NASA Astrophysics Data System (ADS)

Jian, Li-Yi; Lee, Hsin-Ying; Lin, Yung-Hao; Lee, Ching-Ting

2018-02-01

To study the self-heating effect, aluminum oxide (Al2O3) barrier layers of various thicknesses have been inserted between the channel layer and insulator layer in bottom-gate-type indium gallium zinc aluminum oxide (IGZAO) thin-film transistors (TFTs). Each IGZAO channel layer was deposited on indium tin oxide (ITO)-coated glass substrate by using a magnetron radiofrequency cosputtering system with dual targets composed of indium gallium zinc oxide (IGZO) and Al. The 3 s orbital of Al cation provided an extra transport pathway and widened the conduction-band bottom, thus increasing the electron mobility of the IGZAO films. The Al-O bonds were able to sustain the oxygen stability of the IGZAO films. The self-heating behavior of the resulting IGZAO TFTs was studied by Hall measurements on the IGZAO films as well as the electrical performance of the IGZAO TFTs with Al2O3 barrier layers of various thicknesses at different temperatures. IGZAO TFTs with 50-nm-thick Al2O3 barrier layer were stressed by positive gate bias stress (PGBS, at gate-source voltage V GS = 5 V and drain-source voltage V DS = 0 V); at V GS = 5 V and V DS = 10 V, the threshold voltage shifts were 0.04 V and 0.2 V, respectively, much smaller than for the other IGZAO TFTs without Al2O3 barrier layer, which shifted by 0.2 V and 1.0 V when stressed under the same conditions.

High-quality AlN film grown on a nanosized concave-convex surface sapphire substrate by metalorganic vapor phase epitaxy

NASA Astrophysics Data System (ADS)

Yoshikawa, Akira; Nagatomi, Takaharu; Morishita, Tomohiro; Iwaya, Motoaki; Takeuchi, Tetsuya; Kamiyama, Satoshi; Akasaki, Isamu

2017-10-01

We developed a method for fabricating high-crystal-quality AlN films by combining a randomly distributed nanosized concavo-convex sapphire substrate (NCC-SS) and a three-step growth method optimized for NCC-SS, i.e., a 3-nm-thick nucleation layer (870 °C), a 150-nm-thick high-temperature layer (1250 °C), and a 3.2-μm-thick medium-temperature layer (1110 °C). The NCC-SS is easily fabricated using a conventional metalorganic vapor phase epitaxy reactor equipped with a showerhead plate. The resultant AlN film has a crack-free and single-step surface with a root-mean-square roughness of 0.5 nm. The full-widths at half-maxima of the X-ray rocking curve were 50/250 arcsec for the (0002)/(10-12) planes, revealing that the NCC surface is critical for achieving such a high-quality film. Hexagonal-pyramid-shaped voids at the AlN/NCC-SS interface and confinement of dislocations within the 150-nm-thick high-temperature layer were confirmed. The NCC surface feature and resultant faceted voids play an important role in the growth of high-crystal-quality AlN films, likely via localized and/or disordered growth of AlN at the initial stage, contributing to the alignment of high-crystal-quality nuclei and dislocations.

Role of Ga particulates on the structure and optical properties of Y3(Al,Ga)5O12:Tb thin films prepared by PLD

NASA Astrophysics Data System (ADS)

Yousif, A.; Duvenhage, M. M.; Ntwaeaborwa, O. M.; Swart, H. C.

2018-04-01

Y3(Al,Ga)5O12:Tb thin films (70 nm) have been prepared by pulsed laser deposition on a Si (100) substrate at the substrate temperature of 300 °C. The effect of annealing time on the structural, morphological and luminescence properties of Y3(Al,Ga)5O12:Tb thin films at 800 °C were studied. The crystal structure of the samples was studied by X- ray diffraction (XRD) and showed shifts in the peak positions to lower diffraction angles for the annealed film compared to the XRD peak positions of the commercial Y3(Al,Ga)5O12:Tb powder. A new excitation band different from the original Y3(Al,Ga)5O12:Tb powder was also observed for the annealed films. The shift in the XRD pattern and the new excitation band for the annealed film suggested that the films were enriched with Ga after annealing.

A comparison of defect size and film quality obtained from Film digitized image and digital image radiographs

NASA Astrophysics Data System (ADS)

Kamlangkeng, Poramate; Asa, Prateepasen; Mai, Noipitak

2014-06-01

Digital radiographic testing is an acceptable premature nondestructive examination technique. Its performance and limitation comparing to the old technique are still not widely well known. In this paper conducted the study on the comparison of the accuracy of the defect size measurement and film quality obtained from film and digital radiograph techniques by testing in specimens and known size sample defect. Initially, one specimen was built with three types of internal defect; which are longitudinal cracking, lack of fusion, and porosity. For the known size sample defect, it was machined various geometrical size for comparing the accuracy of the measuring defect size to the real size in both film and digital images. To compare the image quality by considering at smallest detectable wire and the three defect images. In this research used Image Quality Indicator (IQI) of wire type 10/16 FE EN BS EN-462-1-1994. The radiographic films were produced by X-ray and gamma ray using Kodak AA400 size 3.5x8 inches, while the digital images were produced by Fuji image plate type ST-VI with 100 micrometers resolution. During the tests, a radiator GE model MF3 was implemented. The applied energy is varied from 120 to 220 kV and the current from 1.2 to 3.0 mA. The intensity of Iridium 192 gamma ray is in the range of 24-25 Curie. Under the mentioned conditions, the results showed that the deviation of the defect size measurement comparing to the real size obtained from the digital image radiographs is below than that of the film digitized, whereas the quality of film digitizer radiographs is higher in comparison.

Optical and electrical properties of p-type transparent conducting CuAlO2 thin film synthesized by reactive radio frequency magnetron sputtering technique

NASA Astrophysics Data System (ADS)

Saha, B.; Thapa, R.; Jana, S.; Chattopadhyay, K. K.

2010-10-01

Thin films of p-type transparent conducting CuAlO2 have been synthesized through reactive radio frequency magnetron sputtering on silicon and glass substrates at substrate temperature 300°C. Reactive sputtering of a target fabricated from Cu and Al powder (1:1.5) was performed in Ar+O2 atmosphere. The deposition parameters were optimized to obtain phase pure, good quality CuAlO2 thin films. The films were characterized by studying their structural, morphological, optical and electrical properties.

Characterization and mechanical properties investigation of TiN-Ag films onto Ti-6Al-4V

NASA Astrophysics Data System (ADS)

Du, Dongxing; Liu, Daoxin; Zhang, Xiaohua; Tang, Jingang; Xiang, Dinggen

2016-03-01

To investigate their effect on fretting fatigue (FF) resistance of a Ti-6Al-4V alloy, hard solid lubricating composite films of TiN with varying silver contents (TiN-Ag) were deposited on a Ti-6Al-4V alloy using ion-assisted magnetron sputtering. The surface morphology and structure were analyzed by atomic force microscopy, X-ray diffractometry, X-ray photoelectron spectroscopy, and transmission electron microscopy. The hardness, bonding strength, and toughness of films were tested using a micro-hardness tester, scratch tester, and a repeated press-press test system that was manufactured in-house, respectively. The FF resistance of TiN-Ag composite films was studied using self-developed devices. The results show that the FF resistance of a titanium alloy can be improved by TiN-Ag composite films, which were fabricated using hard TiN coating doped with soft Ag. The FF life of Ag0.5, Ag2, Ag5, Ag10 and Ag20 composite films is 2.41, 3.18, 3.20, 2.94 and 2.87 times as great as that of the titanium alloy, respectively. This is because the composite films have the better toughness, friction lubrication, and high bonding strength. When the atomic fraction of Ag changes from 2% to 5%, the FF resistance of the composite films shows the best performance. This is attributed to the surface integrity of the composite film is sufficiently fine to prevent the initiation and early propagation of FF cracks.

Electrical resistivity of CuAlMo thin films grown at room temperature by dc magnetron sputtering

NASA Astrophysics Data System (ADS)

Birkett, Martin; Penlington, Roger

2016-07-01

We report on the thickness dependence of electrical resistivity of CuAlMo films grown by dc magnetron sputtering on glass substrates at room temperature. The electrical resistance of the films was monitored in situ during their growth in the thickness range 10-1000 nm. By theoretically modelling the evolution of resistivity during growth we were able to gain an insight into the dominant electrical conduction mechanisms with increasing film thickness. For thicknesses in the range 10-25 nm the electrical resistivity is found to be a function of the film surface roughness and is well described by Namba’s model. For thicknesses of 25-40 nm the experimental data was most accurately fitted using the Mayadas and Shatkes model which accounts for grain boundary scattering of the conduction electrons. Beyond 40 nm, the thickness of the film was found to be the controlling factor and the Fuchs-Sonheimer (FS) model was used to fit the experimental data, with diffuse scattering of the conduction electrons at the two film surfaces. By combining the Fuchs and Namba (FN) models a suitable correlation between theoretical and experimental resistivity can be achieved across the full CuAlMo film thickness range of 10-1000 nm. The irreversibility of resistance for films of thickness >200 nm, which demonstrated bulk conductivity, was measured to be less than 0.03% following subjection to temperature cycles of -55 and +125 °C and the temperature co-efficient of resistance was less than ±15 ppm °C-1.

Investigations of nanodimensional Al{sup 2}O{sup 3} films deposited by ion-plasma sputtering onto porous silicon

DOE Office of Scientific and Technical Information (OSTI.GOV)

Seredin, P. V., E-mail: paul@phys.vsu.ru; Lenshin, A. S.; Goloshchapov, D. L.

2015-07-15

The purpose of this study is the deposition of nanodimensional Al{sup 2}O{sup 3} films on the surface of nanoporous silicon and also fundamental investigations of the structural, optical, and morphological properties of these materials. Analyzing the results obtained here, it is possible to state that ultrathin nanostructured Al{sup 2}O{sup 3} films can be obtained in the form of threads oriented in one direction and located at a distance of 300–500 nm from each other using ion-plasma sputtering on a layer of porous silicon. Such a mechanism of aluminum-oxide growth is conditioned by the crystallographic orientation of the initial single-crystalline siliconmore » wafer used to fabricate the porous layer. The results of optical spectroscopy show that the Al{sup 2}O{sup 3}/por-Si/Si(111) heterophase structure perfectly transmits electromagnetic radiation in the range of 190–900 nm. The maximum in the dispersion of the refractive index obtained for the Al{sup 2}O{sup 3} film grown on por-Si coincides with the optical-absorption edge for aluminum oxide and is located in the region of ∼5.60 eV. This fact is confirmed by the results of calculations of the optical-absorption spectrum of the Al{sup 2}O{sup 3}/por-Si/Si(lll) heterophase structure. The Al{sup 2}O{sup 3} films formed on the heterophase-structure surface in the form of nanodimensional structured threads can serve as channels of optical conduction and can be rather efficiently introduced into conventional technologies, which are of great importance in microelectronics and optoelectronics.« less

Structural and electrical properties of atomic layer deposited Al-doped ZrO2 films and of the interface with TaN electrode

NASA Astrophysics Data System (ADS)

Spiga, S.; Rao, R.; Lamagna, L.; Wiemer, C.; Congedo, G.; Lamperti, A.; Molle, A.; Fanciulli, M.; Palma, F.; Irrera, F.

2012-07-01

Al-doped ZrO2 (Al-ZrO2) films deposited by atomic layer deposition onto silicon substrates and the interface with the TaN metal gate are investigated. In particular, structural properties of as-grown and annealed films in the 6-26 nm thickness range, as well as leakage and capacitive behavior of metal-oxide-semiconductor stacks are characterized. As-deposited Al-ZrO2 films in the mentioned thickness range are amorphous and crystallize in the ZrO2 cubic phase after thermal treatment at 900 °C. Correspondingly, the dielectric constant (k) value increases from 20 ± 1 to 27 ± 2. The Al-ZrO2 layers exhibit uniform composition through the film thickness and are thermally stable on Si, whereas chemical reactions take place at the TaN/Al-ZrO2 interface. A transient capacitance technique is adopted for monitoring charge trapping and flat band instability at short and long time scales. The role of traps nearby the TaN/Al-ZrO2 interface is discussed and compared with other metal/high-k oxide films. Further, analytical modeling of the flat band voltage shift with a power-law dependence on time allows extracting features of bulk traps close to the silicon/oxide interface, which exhibit energy levels in the 1.4-1.9 eV range above the valence band of the Al-ZrO2.

Effect of sputtering pressure on crystalline quality and residual stress of AlN films deposited at 823 K on nitrided sapphire substrates by pulsed DC reactive sputtering

NASA Astrophysics Data System (ADS)

Ohtsuka, Makoto; Takeuchi, Hiroto; Fukuyama, Hiroyuki

2016-05-01

Aluminum nitride (AlN) is a promising material for use in applications such as deep-ultraviolet light-emitting diodes (UV-LEDs) and surface acoustic wave (SAW) devices. In the present study, the effect of sputtering pressure on the surface morphology, crystalline quality, and residual stress of AlN films deposited at 823 K on nitrided a-plane sapphire substrates, which have high-crystalline-quality c-plane AlN thin layers, by pulsed DC reactive sputtering was investigated. The c-axis-oriented AlN films were homoepitaxially grown on nitrided sapphire substrates at sputtering pressures of 0.4-1.5 Pa. Surface damage of the AlN sputtered films increased with increasing sputtering pressure because of arcing (abnormal electrical discharge) during sputtering. The sputtering pressure affected the crystalline quality and residual stress of AlN sputtered films because of a change in the number and energy of Ar+ ions and Al sputtered atoms. The crystalline quality of AlN films was improved by deposition with lower sputtering pressure.

Thermal diffusivity measurement of GaAs/AlGaAs thin-film structures

NASA Astrophysics Data System (ADS)

Chen, G.; Tien, C. L.; Wu, X.; Smith, J. S.

1994-05-01

This work develops a new measurement technique that determines the thermal diffusivity of thin films in both parallel and perpendicular directions, and presents experimental results on the thermal diffusivity of GaAs/AlGaAs-based thin-film structures. In the experiment, a modulated laser source heats up the sample and a fast-response temperature sensor patterned directly on the sample picks up the thermal response. From the phase delay between the heating source and the temperature sensor, the thermal diffusivity in either the parallel or perpendicular direction is obtained depending on the experimental configuration. The experiment is performed on a molecular-beam-epitaxy grown vertical-cavity surface-emitting laser (VCSEL) structure. The substrates of the samples are etched away to eliminate the effects of the interface between the film and the substrate. The results show that the thermal diffusivity of the VCSEL structure is 5-7 times smaller than that of its corresponding bulk media. The experiments also provide evidence on the anisotropy of thermal diffusivity caused solely by the effects of interfaces and boundaries of thin films.

Growth and characterization of a-axis oriented Cr-doped AlN films by DC magnetron sputtering

NASA Astrophysics Data System (ADS)

Panda, Padmalochan; Ramaseshan, R.; Krishna, Nanda Gopala; Dash, S.

2016-05-01

Wurtzite type Cr-doped AlN thin films were grown on Si (100) substrates using DC reactive magnetron sputtering with a function of N2 concentration (15 to 25%). Evolution of crystal structure of these films was studied by GIXRD where a-axis preferred orientation was observed. The electronic binding energy and concentration of Cr in these films were estimated by X-ray photoemission spectroscopy (XPS). We have observed indentation hardness (HIT) of around 28.2 GPa for a nitrogen concentration of 25%.

Dopant Distribution in Atomic Layer Deposited ZnO:Al Films Visualized by Transmission Electron Microscopy and Atom Probe Tomography

PubMed Central

2018-01-01

The maximum conductivity achievable in Al-doped ZnO thin films prepared by atomic layer deposition (ALD) is limited by the low doping efficiency of Al. To better understand the limiting factors for the doping efficiency, the three-dimensional distribution of Al atoms in the ZnO host material matrix has been examined on the atomic scale using a combination of high-resolution transmission electron microscopy (TEM) and atom probe tomography (APT). Although the Al distribution in ZnO films prepared by so-called “ALD supercycles” is often presented as atomically flat δ-doped layers, in reality a broadening of the Al-dopant layers is observed with a full-width–half-maximum of ∼2 nm. In addition, an enrichment of the Al at grain boundaries is observed. The low doping efficiency for local Al densities > ∼1 nm–3 can be ascribed to the Al solubility limit in ZnO and to the suppression of the ionization of Al dopants from adjacent Al donors. PMID:29515290

Characterization of ZrO2 and (ZrO2)x(Al2O3)1-X thin films on Si substrates: effect of the Al2O3 component

NASA Astrophysics Data System (ADS)

Vitanov, P.; Harizanova, A.; Ivanova, T.

2014-05-01

ZrO2 and (ZrO2)x(Al2O3)1-x films were deposited by the sol-gel technique on Si substrates. The effect of the Al2O3 additive on the film surface morphology was studied by atomic force microscopy (AFM). The mixed oxide films showed a smoother morphology and lower values of the root-mean-square (RMS) roughness compared to ZrO2. Further, FTIR spectra indicated that ZrO2 underwent crystallization. The electrical measurements of the MIS structure revealed that the presence of Al2O3 and the amorphization affects its dielectric properties. The MIS structure with (ZrO2)x(Al2O3)1-x showed a lower fixed charge (~ 6×1010 cm-2) and an interface state density in the middle of the band gap of 6×1011 eV-1 cm-2). The dielectric constant measured was 22, with the leakage current density decreasing to 2×10-8 A cm-2 at 1×106 V cm-1.

Atomic layer deposition for fabrication of HfO2/Al2O3 thin films with high laser-induced damage thresholds.

PubMed

Wei, Yaowei; Pan, Feng; Zhang, Qinghua; Ma, Ping

2015-01-01

Previous research on the laser damage resistance of thin films deposited by atomic layer deposition (ALD) is rare. In this work, the ALD process for thin film generation was investigated using different process parameters such as various precursor types and pulse duration. The laser-induced damage threshold (LIDT) was measured as a key property for thin films used as laser system components. Reasons for film damaged were also investigated. The LIDTs for thin films deposited by improved process parameters reached a higher level than previously measured. Specifically, the LIDT of the Al2O3 thin film reached 40 J/cm(2). The LIDT of the HfO2/Al2O3 anti-reflector film reached 18 J/cm(2), the highest value reported for ALD single and anti-reflect films. In addition, it was shown that the LIDT could be improved by further altering the process parameters. All results show that ALD is an effective film deposition technique for fabrication of thin film components for high-power laser systems.

Synthesis of Vertically-Aligned Carbon Nanotubes from Langmuir-Blodgett Films Deposited Fe Nanoparticles on Al2O3/Al/SiO2/Si Substrate.

PubMed

Takagiwa, Shota; Kanasugi, Osamu; Nakamura, Kentaro; Kushida, Masahito

2016-04-01

In order to apply vertically-aligned carbon nanotubes (VA-CNTs) to a new Pt supporting material of polymer electrolyte fuel cell (PEFC), number density and outer diameter of CNTs must be controlled independently. So, we employed Langmuir-Blodgett (LB) technique for depositing CNT growth catalysts. A Fe nanoparticle (NP) was used as a CNT growth catalyst. In this study, we tried to thicken VA-CNT carpet height and inhibit thermal aggregation of Fe NPs by using Al2O3/Al/SiO2/Si substrate. Fe NP LB films were deposited on three typed of substrates, SiO2/Si, as-deposited Al2O3/Al/SiO2/Si and annealed Al2O3/Al/SiO2/Si at 923 K in Ar atmosphere of 16 Pa. It is known that Al2O3/Al catalyzes hydrocarbon reforming, inhibits thermal aggregation of CNT growth catalysts and reduces CNT growth catalysts. It was found that annealed Al2O3/Al/SiO2/Si exerted three effects more strongly than as-deposited Al2O3/Al/SiO2/Si. VA-CNTs were synthesized from Fe NPs-C16 LB films by thermal chemical vapor deposition (CVD) method. As a result, at the distance between two nearest CNTs 28 nm or less, VA-CNT carpet height on annealed Al2O3/Al/SiO2/Si was about twice and ten times thicker than that on SiO2/Si and that on as-deposited Al2O3/Al/SiO2/Si, respectively. Moreover, distribution of CNT outer diameter on annealed Al2O3/Al/SiO2/Si was inhibited compared to that on SiO2/Si. These results suggest that since thermal aggregation of Fe NPs is inhibited, catalyst activity increases and distribution of Fe NP size is inhibited.

Temperature-induced structural evolution of Sm nanoparticles on Al2O3 thin film: An in-situ investigation using SRPES, XPS and STM

NASA Astrophysics Data System (ADS)

Xu, Qian; Hu, Shanwei; Wang, Weijia; Wang, Yan; Ju, Huanxin; Zhu, Junfa

2018-02-01

The structural evolution of Sm nanoclusters on ultrathin film of Al2O3 epitaxially grown on Ni3Al(111) substrate at elevated temperatures was investigated in-situ using synchrotron radiation photoemission spectroscopy (SRPES), X-ray photoelectron spectroscopy (XPS) and scanning tunneling microscopy (STM). The vapor-deposited metallic Sm onto the Al2O3 thin film at 300 K is partially oxidized, leading to the appearance of both Sm2+ and Sm3+ states at low coverages, due to the charge transfer from Sm to oxide film. The complete oxidation of the Sm, i.e., all Sm2+ converted to Sm3+, occurs when the sample is annealed to 500 K. Further annealing results in the diffusion of Sm into the Al2O3 lattice. At ∼900 K, the formation of a SmAlO3 complex is observed. However, this complex starts to decompose and desorb from the surface at temperature higher than 1200 K. Interestingly, it is found that Sm can promote the oxidation of Ni3Al substrate and thicken the alumina film when Sm is deposited at room temperature onto the Al2O3/Ni3Al(111) substrate followed by annealing in oxygen environment at ∼800 K.

Variations in interface compound nucleation for Ti-Al ultrathin films on Si substrates

NASA Astrophysics Data System (ADS)

Han, C. C.; Bené, R. W.

1985-11-01

We have determined the structures of compounds nucleated in a series of sequentially sputtered thin bilayer films of Al and Ti on Si substrates for a range of metal thicknesses and for both (100) and (111) substrates. The compound structures were determined by transmission electron microscopy and diffraction, augmented by Auger electron spectroscopy. An annealing temperature of about 380 °C for 30 min was required to produce compound nucleation. For the Ti/Al/Si(100) system it was found that the phases which were nucleated for samples with 30-min, 380 °C anneals varied from TiAl3 to Ti8Al24 to an unknown compound of tetragonal structure (a=b=5.782 Å, c=6.713 Å) as the Al intermediate layer thickness is changed from 200 to 60 to 40 Å. TiAl3 was the compound nucleated at 380 °C for all other cases. Finally, 410 °C annealing of the Al/Ti/Si(100) samples for 30 min resulted in formation of an apparently Al-altered form of TiSi2.

Growth and characterization of a-axis oriented Cr-doped AlN films by DC magnetron sputtering

DOE Office of Scientific and Technical Information (OSTI.GOV)

Panda, Padmalochan; Ramaseshan, R., E-mail: seshan@igcar.gov.in; Dash, S.

2016-05-23

Wurtzite type Cr-doped AlN thin films were grown on Si (100) substrates using DC reactive magnetron sputtering with a function of N{sub 2} concentration (15 to 25%). Evolution of crystal structure of these films was studied by GIXRD where a-axis preferred orientation was observed. The electronic binding energy and concentration of Cr in these films were estimated by X-ray photoemission spectroscopy (XPS). We have observed indentation hardness (H{sub IT}) of around 28.2 GPa for a nitrogen concentration of 25%.

Effect of Aluminum Doping on the Nanocrystalline ZnS:Al3+ Films Fabricated on Heavily-Doped p-type Si(100) Substrates by Chemical Bath Deposition Method

NASA Astrophysics Data System (ADS)

Zhu, He-Jie; Liang, Yan; Gao, Xiao-Yong; Guo, Rui-Fang; Ji, Qiang-Min

2015-06-01

Intrinsic ZnS and aluminum-doped nanocrystalline ZnS (ZnS:Al3+) films with zinc-blende structure were fabricated on heavily-doped p-type Si(100) substrates by chemical bath deposition method. Influence of aluminum doping on the microstructure, and photoluminescent and electrical properties of the films, were intensively investigated. The average crystallite size of the films varying in the range of about 9.0 ˜ 35.0 nm initially increases and then decreases with aluminum doping contents, indicating that the crystallization of the films are initially enhanced and then weakened. The incorporation of Al3+ was confirmed from energy dispersive spectrometry and the induced microstrain in the films. Strong and stable visible emission band resulting from the defect-related light emission were observed for the intrinsic ZnS and ZnS:Al3+ films at room temperature. The photoluminescence related to the aluminum can annihilate due to the self-absorption of ZnS:Al3+ when the Al3+ content surpasses certain value. The variation of the resistivity of the films that initially reduces and then increases is mainly caused by the partial substitute for Zn2+ by Al3+ as well as the enhanced crystallization, and by the enhanced crystal boundary scattering, respectively.

Effects of anhydrous AlCl3 dopant on the structural, optical and electrical properties of PVA-PVP polymer composite films

NASA Astrophysics Data System (ADS)

Shanmugam, G.; Krishnakumar, V.

2018-05-01

Polymer composite films based on PVA-PVP with AlCl3 as the dopant at different concentrations were prepared using solution casting technique. XRD patterns reveal the increase in amorphousity of the films with AlCl3 doping. Optical absorption studies exhibit that the values of optical absorption coefficient, direct and indirect optical band gaps are found to decrease with increase in AlCl3 concentration. It confirms the charge transfer in complexes between the polymer and the dopant. The dielectric studies show the increase in dielectric constant at low frequency with increasing AlCl3 concentration and temperature. The ac conductivity and ionic conductivity increase with the AlCl3 content and the maximum value at room temperature is found to be 6.89 × 10-4 and 8.05 × 10-5 S/cm for higher AlCl3 doped PVA-PVP film. The estimated ionic conductivity value is three or four orders of magnitude greater than those obtained in the certain representative polymer-salt complexes as reported earlier. Electrical modulus plots confirm the removal of electrode polarization and the low conductivity relaxation time with Al doping. The activation energy estimated from the temperature dependent dc conductivity plot is agreed well with the migration energy calculated from the temperature dependent electric modulus plot.

Electron-stimulated reactions in nanoscale water films adsorbed on (alpha)-Al2O3(0001)

DOE Office of Scientific and Technical Information (OSTI.GOV)

Petrik, Nikolay G.; Kimmel, Gregory A.

2018-05-11

The radiation-induced decomposition and desorption of nanoscale amorphous solid water (D2O) films adsorbed on -Al2O3(0001) surface was studied at low temperature in ultrahigh vacuum using temperature programmed desorption (TPD) and electron stimulated desorption (ESD) with a mono-energetic, low energy electron source. ESD yields of molecular products ( D2, O2 and D¬2O) and the total sputtering yield increased with increasing D2O coverage up to ~15 water monolayers (i.e. ~15 1015 cm-2) to a coverage-independent level for thicker water films. Experiments with isotopically-layered water films (D2O and H2O) demonstrated that the highest water decomposition yields occurred at the interfaces of the nanoscalemore » water films with the alumina substrate and vacuum. However, the increased reactivity of the water/alumina interface is relatively small compared to the enhancements in the non-thermal reactions previously observed at the water/Pt(111) and water/TiO2(110) interfaces. We propose that the relatively low activity of Al2O3(0001) for the radiation-induced production of molecular hydrogen is associated with lower reactivity of this surface with hydrogen atoms, which are likely precursors for the molecular hydrogen.« less

Microstructure and dielectric properties of piezoelectric magnetron sputtered w-ScxAl1-xN thin films

DOE Office of Scientific and Technical Information (OSTI.GOV)

Zukauskaite, Agne; Wingqvist, Gunilla; Palisaitis, Justinas

2012-01-01

Piezoelectric wurtzite ScxAl1 xN (x = 0, 0.1, 0.2, 0.3) thin films were epitaxially grown by reactive magnetron co-sputtering from elemental Sc and Al targets. Al2O3(0001) wafers with TiN(111) seed and electrode layers were used as substrates. X-ray diffraction shows that an increase in the Sc content results in the degradation of the crystalline quality. Samples grown at 400 C possess true dielectric behavior with quite low dielectric losses and the leakage current is negligible. For ScAlN samples grown at 800 C, the crystal structure is poor and leakage current is high. Transmission electron microscopy with energy dispersive x-ray spectroscopymore » mapping shows a mass separation into ScN-rich and AlN-rich domains for x 0.2 when substrate temperature is increased from 400 to 800 C. The piezoelectric response of epitaxial ScxAl1 xN films measured by piezoresponse force microscopy and double beam interferometry shows up to 180% increase by the addition of Sc up to x = 0.2 independent of substrate temperature, in good agreement with previous theoretical predictions based on density-functional theory.« less

Evaluation of Gafchromic EBT-XD film, with comparison to EBT3 film, and application in high dose radiotherapy verification.

PubMed

Palmer, Antony L; Dimitriadis, Alexis; Nisbet, Andrew; Clark, Catharine H

2015-11-21

There is renewed interest in film dosimetry for the verification of dose delivery of complex treatments, particularly small fields, compared to treatment planning system calculations. A new radiochromic film, Gafchromic EBT-XD, is available for high-dose treatment verification and we present the first published evaluation of its use. We evaluate the new film for MV photon dosimetry, including calibration curves, performance with single- and triple-channel dosimetry, and comparison to existing EBT3 film. In the verification of a typical 25 Gy stereotactic radiotherapy (SRS) treatment, compared to TPS planned dose distribution, excellent agreement was seen with EBT-XD using triple-channel dosimetry, in isodose overlay, maximum 1.0 mm difference over 200-2400 cGy, and gamma evaluation, mean passing rate 97% at 3% locally-normalised, 1.5 mm criteria. In comparison to EBT3, EBT-XD gave improved evaluation results for the SRS-plan, had improved calibration curve gradients at high doses, and had reduced lateral scanner effect. The dimensions of the two films are identical. The optical density of EBT-XD is lower than EBT3 for the same dose. The effective atomic number for both may be considered water-equivalent in MV radiotherapy. We have validated the use of EBT-XD for high-dose, small-field radiotherapy, for routine QC and a forthcoming multi-centre SRS dosimetry intercomparison.

Evaluation of Gafchromic EBT-XD film, with comparison to EBT3 film, and application in high dose radiotherapy verification

NASA Astrophysics Data System (ADS)

Palmer, Antony L.; Dimitriadis, Alexis; Nisbet, Andrew; Clark, Catharine H.

2015-11-01

There is renewed interest in film dosimetry for the verification of dose delivery of complex treatments, particularly small fields, compared to treatment planning system calculations. A new radiochromic film, Gafchromic EBT-XD, is available for high-dose treatment verification and we present the first published evaluation of its use. We evaluate the new film for MV photon dosimetry, including calibration curves, performance with single- and triple-channel dosimetry, and comparison to existing EBT3 film. In the verification of a typical 25 Gy stereotactic radiotherapy (SRS) treatment, compared to TPS planned dose distribution, excellent agreement was seen with EBT-XD using triple-channel dosimetry, in isodose overlay, maximum 1.0 mm difference over 200-2400 cGy, and gamma evaluation, mean passing rate 97% at 3% locally-normalised, 1.5 mm criteria. In comparison to EBT3, EBT-XD gave improved evaluation results for the SRS-plan, had improved calibration curve gradients at high doses, and had reduced lateral scanner effect. The dimensions of the two films are identical. The optical density of EBT-XD is lower than EBT3 for the same dose. The effective atomic number for both may be considered water-equivalent in MV radiotherapy. We have validated the use of EBT-XD for high-dose, small-field radiotherapy, for routine QC and a forthcoming multi-centre SRS dosimetry intercomparison.

Stable and Flexible CuInS2/ZnS:Al-TiO2 Film for Solar-Light-Driven Photodegradation of Soil Fumigant.

PubMed

Yan, Lili; Li, Zhichun; Sun, Mingxing; Shen, Guoqing; Li, Liang

2016-08-10

Semiconductor quantum dots (QDs) are suitable light absorbers for photocatalysis because of their unique properties. However, QDs generally suffer from poor photochemical stability against air, limiting their applications in photocatalysis. In this study, a stable solar-light-driven QDs-containing photocatalytic film was developed to facilitate photocatalytic degradation of the soil fumigant 1,3-dichloropropene (1,3-D). Highly stable CuInS2/ZnS:Al core/shell QDs (CIS/ZnS:Al QDs) were synthesized by doping Al into the ZnS shell and controlling ZnS:Al shell thickness; the CIS/ZnS:Al QDs were subsequently combined with TiO2 to form a CIS/ZnS:Al-TiO2 photocatalyst. The optimized ZnS:Al shell thickness for 1,3-D photodegradation was approximately 1.3 nm, which guaranteed and balanced the good photocatalytic activity and stability of the CIS/ZnS:Al-TiO2 photocatalyst. The photodegradation efficiency of 1,3-D can be maintained up to more than 80% after five cycles during recycling experiment. When CIS/ZnS:Al-TiO2 was deposited as photocatalytic film on a flexible polyethylene terephthalate substrate, over 99% of cis-1,3-D and 98% of trans-1,3-D were depleted as they passed through the film during 15 h of irradiation under natural solar light. This study demonstrated that the stable CIS/ZnS:Al-TiO2 photocatalyst both in powder and film form is a promising agent for photodegradation and emission reduction of soil fumigants.

Tunable optical properties of plasmonic Au/Al2O3 nanocomposite thin films analyzed by spectroscopic ellipsometry accounting surface characteristics.

PubMed

Jaiswal, Jyoti; Mourya, Satyendra; Malik, Gaurav; Chandra, Ramesh

2018-05-01

In the present work, we have fabricated plasmonic gold/alumina nanocomposite (Au/Al 2 O 3 NC) thin films on a glass substrate at room temperature by RF magnetron co-sputtering. The influence of the film thickness (∼10-40  nm) on the optical and other physical properties of the samples was investigated and correlated with the structural and compositional properties. The X-ray diffractometer measurement revealed the formation of Au nanoparticles with average crystallite size (5-9.2 nm) embedded in an amorphous Al 2 O 3 matrix. The energy-dispersive X ray and X-ray photoelectron spectroscopy results confirmed the formation of Au/Al 2 O 3 NC quantitatively and qualitatively and it was observed that atomic% of Au increased by increasing thickness. The optical constants of the plasmonic Au/Al 2 O 3 NC thin films were examined by variable angle spectroscopic ellipsometry in the wide spectral range of 246-1688 nm, accounting the surface characteristics in the optical stack model, and the obtained results are expected to be unique. Additionally, a thickness-dependent blueshift (631-590 nm) of surface plasmon resonance peak was observed in the absorption spectra. These findings of the plasmonic Au/Al 2 O 3 NC films may allow the design and fabrication of small, compact, and efficient devices for optoelectronic and photonic applications.

Phase separations of amorphous CoW films during oxidation and reactions with Si and Al

DOE Office of Scientific and Technical Information (OSTI.GOV)

Wang, S.Q.; Mayer, J.W.

1989-03-01

Reactions of thin Co/sub 55/ W/sub 45/ films in contact with Si(100) substrates and aluminum overlayers annealed in vacuum in the temperature ranges of 625--700 /sup 0/C and 500--600 /sup 0/C, respectively, and of thin Co/sub 55/W/sub 45/ films in air from 500 to 600 /sup 0/C were investigated by Rutherford backscattering spectrometry, glancing angle x-ray diffraction, and scanning electron microscope techniques. CoW alloy films were amorphous and have a crystallization temperature of 850 /sup 0/C on SiO/sub 2/ substrates. The compound formed is Co/sub 7/ W/sub 6/. Phase separations were found in all the reactions. A layer of cobaltmore » compounds (CoSi/sub 2/ in Si/CoW, Co/sub 2/ Al/sub 9/ in CoW/Al, and Co/sub 3/ O/sub 4/ in CoW with air) was found to form at the reaction interfaces. In addition, a layer of mainly tungsten compounds (WSi/sub 2/ in Si/CoW, WAl/sub 12/ in CoW/Al, and WO/sub 3/ in CoW with air) was found next to cobalt compound layers, but further away from the reaction interfaces. The reactions started at temperatures comparable to those required for the formation of corresponding tungsten compounds.« less

Parallel Critical Field in Thin Niobium Films: Comparison to Theory

NASA Astrophysics Data System (ADS)

Broussard, P. R.

2017-10-01

For the first time, a comparison to the predicted behavior for parallel critical field is carried out for the model of Kogan and the model of Hara and Nagai. In this study, thin niobium films in the moderately dirty regime were considered. Experimental values of the -C2 term are seen to be lower than those from the model of Hara and Nagai. A possible reason for this could be not including the non-spherical Fermi surface of niobium into the model. There is clearly disagreement with the model of Kogan as the films get cleaner and thinner, and two films which should be below his critical thickness still show positive values of -C2, in disagreement with his theory.

Archetypal structure of ultrathin alumina films: Grazing-incidence x-ray diffraction on Ni(111)

NASA Astrophysics Data System (ADS)

Prévot, G.; Le Moal, S.; Bernard, R.; Croset, B.; Lazzari, R.; Schmaus, D.

2012-05-01

We have studied by grazing-incidence x-ray diffraction the atomic structure of an ultrathin alumina film grown on Ni(111). We show that, since there is neither registry between the film and the substrate nor induced Ni relaxations, this system appears to be a prototypical freestanding oxide layer. We have been able to unambiguously determine the three-dimensional structure of the film, which consists of a substrate/Al16/O24/Al24/O28 stacking within a (18.23 × 10.53 Å) R0° unit cell. From the different Al coordinations (3/4/5) in the layer and from the precise determination of the Al-O interatomic distances, we conclude that the film structure presents some similarities with the η phase of bulk alumina, which also has a high surface/bulk ratio. The precise comparison between these two structures allows us to explain that the perfect 3 ratio between the two sides of the mesh of the film is governed by the stacking of the two central planes, combining oxygen close-packed atoms below Al atoms in tetrahedral or pyramidal positions. Moreover, Al atoms at the interface plane of the ultrathin film adopt a quasitrihedral configuration, which confirms that, in the alumina η phase, Al atoms with such a coordination are located near the surface of the nanocrystals. The atomic structure is also very close to the one first proposed by Kresse [G. Kresse, M. Schmid, E. Napetschnig, M. Shishkin, L. Köhler, and P. Varga, ScienceSCIEAS0036-807510.1126/science.1107783 308, 1440 (2005)] for alumina films on NiAl(110). This strongly suggests that this atomic model, within small variations, can be extended to ultrathin alumina film on numerous other metal substrates and may be quasi-intrinsic to a freestanding layer rather than governed by the interactions between the film and the substrate.

Behavior of oxide film at the interface between particles in sintered Al powders by pulse electric-current sintering

NASA Astrophysics Data System (ADS)

Xie, Guoqiang; Ohashi, Osamu; Song, Minghui; Furuya, Kazuo; Noda, Tetsuji

2003-03-01

The microstructure of the bonding interfaces between particles in aluminum (Al) powder sintered specimens by the pulse electric-current sintering (PECS) process was observed, using conventional transmission electron microscopy (CTEM) and high-resolution transmission electron microscopy (HRTEM). The behavior of oxide film at the interface between Al particles and its effect on properties of the sintered specimens were investigated. The results showed there were two kinds of bonding interfaces in the sintered specimens, namely, the direct metal/metal bonding and the metal/oxide film layer/metal bonding interface. By increasing the fraction of the direct metal/metal bonding interfaces, the tensile strength of the sintered specimens increased, and the electrical resistivity decreased. By increasing the loading pressure at higher sintering temperatures or increasing the sintering temperature under loading pressure, the breakdown of oxide film was promoted. The broken oxide film debris was dispersed in aluminum metal near the bonding interfaces between particles.

A comparison study of image features between FFDM and film mammogram images

PubMed Central

Jing, Hao; Yang, Yongyi; Wernick, Miles N.; Yarusso, Laura M.; Nishikawa, Robert M.

2012-01-01

Purpose: This work is to provide a direct, quantitative comparison of image features measured by film and full-field digital mammography (FFDM). The purpose is to investigate whether there is any systematic difference between film and FFDM in terms of quantitative image features and their influence on the performance of a computer-aided diagnosis (CAD) system. Methods: The authors make use of a set of matched film-FFDM image pairs acquired from cadaver breast specimens with simulated microcalcifications consisting of bone and teeth fragments using both a GE digital mammography system and a screen-film system. To quantify the image features, the authors consider a set of 12 textural features of lesion regions and six image features of individual microcalcifications (MCs). The authors first conduct a direct comparison on these quantitative features extracted from film and FFDM images. The authors then study the performance of a CAD classifier for discriminating between MCs and false positives (FPs) when the classifier is trained on images of different types (film, FFDM, or both). Results: For all the features considered, the quantitative results show a high degree of correlation between features extracted from film and FFDM, with the correlation coefficients ranging from 0.7326 to 0.9602 for the different features. Based on a Fisher sign rank test, there was no significant difference observed between the features extracted from film and those from FFDM. For both MC detection and discrimination of FPs from MCs, FFDM had a slight but statistically significant advantage in performance; however, when the classifiers were trained on different types of images (acquired with FFDM or SFM) for discriminating MCs from FPs, there was little difference. Conclusions: The results indicate good agreement between film and FFDM in quantitative image features. While FFDM images provide better detection performance in MCs, FFDM and film images may be interchangeable for the purposes of

Ab initio modeling of zincblende AlN layer in Al-AlN-TiN multilayers

DOE PAGES

Yadav, S. K.; Wang, J.; Liu, X. -Y.

2016-06-13

An unusual growth mechanism of metastable zincblende AlN thin film by diffusion of nitrogen atoms into Al lattice is established. Using first-principles density functional theory, we studied the possibility of thermodynamic stability of AlN as a zincblende phase due to epitaxial strains and interface effect, which fails to explain the formation of zincblende AlN. We then compared the formation energetics of rocksalt and zincblende AlN in fcc Al through direct diffusion of nitrogen atoms to Al octahedral and tetrahedral interstitials. Furthermore, the formation of a zincblende AlN thin film is determined to be a kinetically driven process, not a thermodynamicallymore » driven process.« less

Effect of Pre-Annealing on Thermal and Optical Properties of ZnO and Al-ZnO Thin Films

NASA Astrophysics Data System (ADS)

Saravanan, P.; Gnanavelbabu, A.; Pandiaraj, P.

Zinc oxide (ZnO) nanoparticles were synthesized by a simple solution route method using zinc acetate as the precursor and ethanol as the solvent. At a temperature of 60∘C, a clear homogenous solution is heated to 100∘C for ethanol evaporation. Then the obtained precursor powder is annealed at 600∘C for the formation of ZnO nanocrystalline structure. Doped ZnO particle is also prepared by using aluminum nitrate nonahydrate to produce aluminum (Al)-doped nanoparticles using the same solution route method followed by annealing. Thin film fabrication is done by air evaporation method using the polymer polyvinyl alcohol (PVA). To analyze the optical and thermal properties for undoped and doped ZnO nanocrystalline thin film by precursor annealing, characterizations such as UV, FTIR, AFM, TGA/DTA, XRD, EDAX and Photoluminescence (PL) were also taken. It was evident that precursor annealing had great influence on thermal and optical properties of thin films while ZnO and AZO film showed low crystallinity and intensity than in the powder form. TGA/DTA suggests pre-annealing effect improves the thermal stability, which ensures that Al ZnO nanoparticle can withstand at high temperature too which is the crucial advantage in the semiconductor devices. UV spectroscopy confirmed the presence of ZnO nanoparticles in the thin film by an absorbance peak observed at 359nm with an energy bandgap of 3.4eV. A peak obtained at 301nm with an energy bandgap of 4.12eV shows a blue shift due to the presence of Al-doped ZnO nanoparticles. Both ZnO and AZO bandgap increased due to precursor annealing. In this research, PL spectrum is also studied in order to determine the optical property of the nanoparticle embedded thin film. From PL spectrum, it is observed that the intensity of the doped ZnO is much more enhanced as the dopant concentration is increased to 1wt.% and 2wt.% of Al in ZnO.

Epitaxial growth and characterization of approximately 300-nm-thick AlInN films nearly lattice-matched to c-plane GaN grown on sapphire

NASA Astrophysics Data System (ADS)

Miyoshi, Makoto; Yamanaka, Mizuki; Egawa, Takashi; Takeuchi, Tetsuya

2018-05-01

AlInN epitaxial films with film thicknesses up to approximately 300 nm were grown nearly lattice-matched to a c-plane GaN-on-sapphire template by metalorganic chemical vapor deposition. The AlInN films showed relative good crystal qualities and flat surfaces, despite the existence of surface pits connected to dislocations in the underlying GaN film. The refractive index derived in this study agreed well with a previously reported result obtained over the whole visible wavelength region. The extinction coefficient spectrum exhibited a clear absorption edge, and the bandgap energy for AlInN nearly lattice-matched to GaN was determined to be approximately 4.0 eV.

Origin of high carrier mobility and low residual stress in RF superimposed DC sputtered Al doped ZnO thin film for next generation flexible devices

NASA Astrophysics Data System (ADS)

Kumar, Naveen; Dubey, Ashish; Bahrami, Behzad; Venkatesan, S.; Qiao, Qiquan; Kumar, Mukesh

2018-04-01

In this work, the energy and flux of high energetic ions were controlled by RF superimposed DC sputtering process to increase the grain size and suppress grain boundary potential with minimum residual stress in Al doped ZnO (AZO) thin film. AZO thin films were deposited at different RF/(RF + DC) ratios by keeping total power same and were investigated for their electrical, optical, structural and nanoscale grain boundaries potential. All AZO thin film showed high crystallinity and orientation along (002) with peak shift as RF/(RF + DC) ratio increased from 0.0, pure DC, to 1.0, pure RF. This peak shift was correlated with high residual stress in as-grown thin film. AZO thin film grown at mixed RF/(RF + DC) of 0.75 showed high electron mobility, low residual stress and large crystallite size in comparison to other AZO thin films. The nanoscale grain boundary potential was mapped using Kelvin Probe Force Microscopy in all AZO thin film and it was observed that carrier mobility is controlled not only by grains size but also by grain boundary potential. The XPS analysis confirms the variation in oxygen vacancies and zinc interstitials which explain the origin of low grain boundaries potential and high carrier mobility in AZO thin film deposited at 0.75 RF/(RF + DC) ratio. This study proposes a new way to control the grain size and grain boundary potential to further tune the optoelectronic-mechanical properties of AZO thin films for next generation flexible and optoelectronic devices.

Effect of Al on the microstructure, magnetic and millimeter-wave properties of high oriented barium hexaferrite thin films

NASA Astrophysics Data System (ADS)

Chen, Daming; Chen, Zhuo; Wang, Guijuan; Chen, Yong; Li, Yuanxun; Liu, Yingli

2017-12-01

The microstructure, magnetic and millimeter-wave properties of high oriented barium hexaferrite (BaAlxFe12-xO19) thin films with Al doping level x from 0 to 2 are reported. The films were grown on Pt/TiO2/SiO2/Si substrate by Sol-gel method. It is found that with increasing x from 0 to 2 the hexagonal grain disappear, together with Curie temperature dropped from 449 °C to 332 °C and saturated magnetization (4πMs) decreased from 3.8 kG to 1.9 kG, it is attributed to the fact that the Fe ions were substituted by non-magnetic Al ions, leading to the Fe3+-O-Fe3+ super-exchange interaction became weak. The ferromagnetic resonance (FMR) measurement showed that the FMR linewidths is as low as 113 Oe @ 58 GHz, and the FMR frequency shifted to higher frequency range when increasing Al doping level. These result offer the potential application of barium ferrite thin films in tunable millimeter wave devices such as filter, circulator and isolator.

Enhancement of thermoelectric characteristics in AlGaN/GaN films deposited on inverted pyramidal Si surfaces

NASA Astrophysics Data System (ADS)

Yalamarthy, Ananth Saran; So, Hongyun; Senesky, Debbie G.

2017-07-01

In this letter, we demonstrate an engineering strategy to boost thermoelectric power factor via geometry-induced properties of the pyramid structure. Aluminum gallium nitride (AlGaN)/GaN heterostructured films grown on inverted pyramidal silicon (Si) demonstrate higher power factor as compared to those grown on conventional flat Si substrates. We found that the magnitude of the Seebeck coefficient at room temperature increased from approximately 297 μVK-1 for the flat film to approximately 849 μVK-1 for the film on inverted pyramidal Si. In addition, the "effective" electrical conductivity of the AlGaN/GaN on the inverted pyramidal structure increased compared to the flat structure, generating an enhancement of thermoelectric power factor. The results demonstrate how manipulation of geometry can be used to achieve better thermoelectric characteristics in a manner that could be scaled to a variety of different material platforms.

Passivation mechanism of thermal atomic layer-deposited Al2O3 films on silicon at different annealing temperatures.

PubMed

Zhao, Yan; Zhou, Chunlan; Zhang, Xiang; Zhang, Peng; Dou, Yanan; Wang, Wenjing; Cao, Xingzhong; Wang, Baoyi; Tang, Yehua; Zhou, Su

2013-03-02

Thermal atomic layer-deposited (ALD) aluminum oxide (Al2O3) acquires high negative fixed charge density (Qf) and sufficiently low interface trap density after annealing, which enables excellent surface passivation for crystalline silicon. Qf can be controlled by varying the annealing temperatures. In this study, the effect of the annealing temperature of thermal ALD Al2O3 films on p-type Czochralski silicon wafers was investigated. Corona charging measurements revealed that the Qf obtained at 300°C did not significantly affect passivation. The interface-trapping density markedly increased at high annealing temperature (>600°C) and degraded the surface passivation even at a high Qf. Negatively charged or neutral vacancies were found in the samples annealed at 300°C, 500°C, and 750°C using positron annihilation techniques. The Al defect density in the bulk film and the vacancy density near the SiOx/Si interface region decreased with increased temperature. Measurement results of Qf proved that the Al vacancy of the bulk film may not be related to Qf. The defect density in the SiOx region affected the chemical passivation, but other factors may dominantly influence chemical passivation at 750°C.

Passivation mechanism of thermal atomic layer-deposited Al2O3 films on silicon at different annealing temperatures

PubMed Central

2013-01-01

Thermal atomic layer-deposited (ALD) aluminum oxide (Al2O3) acquires high negative fixed charge density (Qf) and sufficiently low interface trap density after annealing, which enables excellent surface passivation for crystalline silicon. Qf can be controlled by varying the annealing temperatures. In this study, the effect of the annealing temperature of thermal ALD Al2O3 films on p-type Czochralski silicon wafers was investigated. Corona charging measurements revealed that the Qf obtained at 300°C did not significantly affect passivation. The interface-trapping density markedly increased at high annealing temperature (>600°C) and degraded the surface passivation even at a high Qf. Negatively charged or neutral vacancies were found in the samples annealed at 300°C, 500°C, and 750°C using positron annihilation techniques. The Al defect density in the bulk film and the vacancy density near the SiOx/Si interface region decreased with increased temperature. Measurement results of Qf proved that the Al vacancy of the bulk film may not be related to Qf. The defect density in the SiOx region affected the chemical passivation, but other factors may dominantly influence chemical passivation at 750°C. PMID:23452508

Electron-stimulated reactions in nanoscale water films adsorbed on α-Al 2 O 3 (0001)

DOE PAGES

Petrik, Nikolay G.; Kimmel, Greg A.

2018-04-11

The radiation-induced decomposition and desorption of nanoscale amorphous solid water (D 2O) films adsorbed on an α-Al 2O 3(0001) surface was studied at low temperature in ultrahigh vacuum using temperature programmed desorption (TPD) and electron stimulated desorption (ESD) with a mono-energetic, low energy electron source. ESD yields of molecular products (D 2, O 2 and D 2O) and the total sputtering yield increased with increasing D 2O coverage up to ~15 water monolayers (i.e. ~15 x 10 15 cm -2) to a coverage-independent level for thicker water films. Experiments with isotopically-layered water films (D 2O and H 2O) demonstrated thatmore » the highest water decomposition yields occurred at the interfaces of the nanoscale water films with the alumina substrate and vacuum. However, the increased reactivity of the water/alumina interface is relatively small compared to the enhancements in the non-thermal reactions previously observed at the water/Pt(111) and water/TiO 2(110) interfaces. Here, we propose that the relatively low activity of Al 2O 3(0001) for the radiation-induced production of molecular hydrogen is associated with lower reactivity of this surface with hydrogen atoms, which are likely precursors for the formation of molecular hydrogen.« less

Electron-stimulated reactions in nanoscale water films adsorbed on α-Al 2 O 3 (0001)

DOE Office of Scientific and Technical Information (OSTI.GOV)

Petrik, Nikolay G.; Kimmel, Greg A.

The radiation-induced decomposition and desorption of nanoscale amorphous solid water (D 2O) films adsorbed on an α-Al 2O 3(0001) surface was studied at low temperature in ultrahigh vacuum using temperature programmed desorption (TPD) and electron stimulated desorption (ESD) with a mono-energetic, low energy electron source. ESD yields of molecular products (D 2, O 2 and D 2O) and the total sputtering yield increased with increasing D 2O coverage up to ~15 water monolayers (i.e. ~15 x 10 15 cm -2) to a coverage-independent level for thicker water films. Experiments with isotopically-layered water films (D 2O and H 2O) demonstrated thatmore » the highest water decomposition yields occurred at the interfaces of the nanoscale water films with the alumina substrate and vacuum. However, the increased reactivity of the water/alumina interface is relatively small compared to the enhancements in the non-thermal reactions previously observed at the water/Pt(111) and water/TiO 2(110) interfaces. Here, we propose that the relatively low activity of Al 2O 3(0001) for the radiation-induced production of molecular hydrogen is associated with lower reactivity of this surface with hydrogen atoms, which are likely precursors for the formation of molecular hydrogen.« less

Enhanced photoluminescence of corrugated Al2O3 film assisted by colloidal CdSe quantum dots.

PubMed

Bai, Zhongchen; Hao, Licai; Zhang, Zhengping; Huang, Zhaoling; Qin, Shuijie

2017-05-19

We present the enhanced photoluminescence (PL) of a corrugated Al 2 O 3 film enabled by colloidal CdSe quantum dots. The colloidal CdSe quantum dots are fabricated directly on a corrugated Al 2 O 3 substrate using an electrochemical deposition (ECD) method in a microfluidic system. The photoluminescence is excited by using a 150 nm diameter ultraviolet laser spot of a scanning near-field optical microscope. Owing to the electron transfer from the conduction band of the CdSe quantum dots to that of Al 2 O 3 , the enhanced photoluminescence effect is observed, which results from the increase in the recombination rate of electrons and holes on the Al 2 O 3 surface and the reduction in the fluorescence of the CdSe quantum dots. A periodically-fluctuating fluorescent spectrum was exhibited because of the periodical wire-like corrugated Al 2 O 3 surface serving as an optical grating. The spectral topographic map around the fluorescence peak from the Al 2 O 3 areas covered with CdSe quantum dots was unique and attributed to the uniform deposition of CdSe QDs on the corrugated Al 2 O 3 surface. We believe that the microfluidic ECD system and the surface enhanced fluorescence method described in this paper have potential applications in forming uniform optoelectronic films of colloidal quantum dots with controllable QD spacing and in boosting the fluorescent efficiency of weak PL devices.

Temperature dependent structural and magnetic study of Co-sputtered Fe-Al thin film

NASA Astrophysics Data System (ADS)

Vyas, Anupam; Brajpuriya, Ranjeet

2017-05-01

The authors have deposited co-sputtered Fe-Al thin film on a glass substrate. It is the first ever reporting of Fe and Al co-sputtering in an Argon atmosphere under vacuum conditions. The sample was annealed at 200°C, 300°C, 400°C, so as to allow different phase formation in it. To study the structural and magnetic properties of the samples the GIXRD, XRR and MOKE measurements were done. After annealing at 400°C we observed disordered FeAl formation and which after further converted to more ordered phase which is also confirmed from reflectivity measurements. The magnetic measurement shows the magnetic nature of the sample even after annealing at 400°C/5hr.

Microstructural and mechanical properties of Al2O3/ZrO2 nanomultilayer thin films prepared by pulsed laser deposition

NASA Astrophysics Data System (ADS)

Balakrishnan, G.; Sastikumar, D.; Kuppusami, P.; Babu, R. Venkatesh; Song, Jung Il

2018-02-01

Single layer aluminium oxide (Al2O3), zirconium oxide (ZrO2) and Al2O3/ZrO2 nano multilayer films were deposited on Si (100) substrates at room temperature by pulsed laser deposition. The development of Al2O3/ZrO2 nanolayered structure is an important method used to stabilize the high temperature phase (tetragonal and cubic) of ZrO2 at room temperature. In the Al2O3/ZrO2 multilayer structure, the Al2O3 layer was kept constant at 5 nm, while the ZrO2 layer thickness varied from 5 to 20 nm (5/5, 5/10, 5/15 and 5/20 nm) with a total of 40 bilayers. The X-ray diffraction studies of single layer Al2O3 indicated the γ-Al2O3 of cubic structure, while the single layer ZrO2 indicated both monoclinic and tetragonal phases. The 5/5 and 5/10 nm multilayer films showed the nanocrystalline nature of ZrO2 with tetragonal phase. The high resolution transmission electron microscopy studies indicated the formation of well-defined Al2O3 and ZrO2 layers and that they are of uniform thickness. The atomic force microscopy studies revealed the uniform and dense distribution of nanocrystallites. The nanoindentation studies indicated the hardness of 20.8 ± 1.10 and 10 ± 0.60 GPa, for single layer Al2O3 and ZrO2, respectively, and the hardness of multilayer films varied with bilayer thickness.

Deposition of highly textured AlN thin films by reactive high power impulse magnetron sputtering

DOE Office of Scientific and Technical Information (OSTI.GOV)

Moreira, Milena A.; Törndahl, Tobias; Katardjiev, Ilia

2015-03-15

Aluminum nitride thin films were deposited by reactive high power impulse magnetron sputtering (HiPIMS) and pulsed direct-current on Si (100) and textured Mo substrates, where the same deposition conditions were used for both techniques. The films were characterized by x-ray diffraction and atomic force microscopy. The results show a pronounced improvement in the AlN crystalline texture for all films deposited by HiPIMS on Si. Already at room temperature, the HiPIMS films exhibited a strong preferred (002) orientation and at 400 °C, no contributions from other orientations were detected. Despite the low film thickness of only 200 nm, an ω-scan full width atmore » half maximum value of 5.1° was achieved on Si. The results are attributed to the high ionization of sputtered material achieved in HiPIMS. On textured Mo, there was no significant difference between the deposition techniques.« less

A diffusion-reaction scheme for modeling ignition and self-propagating reactions in Al/CuO multilayered thin films

NASA Astrophysics Data System (ADS)

Lahiner, Guillaume; Nicollet, Andrea; Zapata, James; Marín, Lorena; Richard, Nicolas; Rouhani, Mehdi Djafari; Rossi, Carole; Estève, Alain

2017-10-01

Thermite multilayered films have the potential to be used as local high intensity heat sources for a variety of applications. Improving the ability of researchers to more rapidly develop Micro Electro Mechanical Systems devices based on thermite multilayer films requires predictive modeling in which an understanding of the relationship between the properties (ignition and flame propagation), the multilayer structure and composition (bilayer thicknesses, ratio of reactants, and nature of interfaces), and aspects related to integration (substrate conductivity and ignition apparatus) is achieved. Assembling all these aspects, this work proposes an original 2D diffusion-reaction modeling framework to predict the ignition threshold and reaction dynamics of Al/CuO multilayered thin films. This model takes into consideration that CuO first decomposes into Cu2O, and then, released oxygen diffuses across the Cu2O and Al2O3 layers before reacting with pure Al to form Al2O3. This model is experimentally validated from ignition and flame velocity data acquired on Al/CuO multilayers deposited on a Kapton layer. This paper discusses, for the first time, the importance of determining the ceiling temperature above which the multilayers disintegrate, possibly before their complete combustion, thus severely impacting the reaction front velocity and energy release. This work provides a set of heating surface areas to obtain the best ignition conditions, i.e., with minimal ignition power, as a function of the substrate type.

Optically stimulated luminescence (OSL) of carbon-doped aluminum oxide (Al{sub 2}O{sub 3}:C) for film dosimetry in radiotherapy

DOE Office of Scientific and Technical Information (OSTI.GOV)

Schembri, V.; Heijmen, B. J. M.

2007-06-15

Introduction and Purpose: Conventional x-ray films and radiochromic films have inherent challenges for high precision radiotherapy dosimetry. Here we have investigated basic characteristics of optically stimulated luminescence (OSL) of irradiated films containing carbon-doped aluminum oxide (Al{sub 2}O{sub 3}:C) for dosimetry in therapeutic photon and electron beams. Materials and Methods: The OSL films consist of a polystyrene sheet, with a top layer of a mixture of single crystals of Al{sub 2}O{sub 3}:C, ground into a powder, and a polyester base. The total thickness of the films is 0.3 mm. Measurements have been performed in a water equivalent phantom, using 4, 6,more » 10, and 18 MV photon beams, and 6-22 MeV electron beams. The studies include assessment of the film response (acquired OSL signal/delivered dose) on delivered dose (linearity), dose rate (1-6 Gy/min), beam quality, field size and depth (6 MV, ranges 4x4-30x30 cm{sup 2}, d{sub max}-35 cm). Doses have been derived from ionization chamber measurements. OSL films have also been compared with conventional x-ray and GafChromic films for dosimetry outside the high dose area, with a high proportion of low dose scattered photons. In total, 787 OSL films have been irradiated. Results: Overall, the OSL response for electron beams was 3.6% lower than for photon beams. Differences between the various electron beam energies were not significant. The 6 and 18 MV photon beams differed in response by 4%. No response dependencies on dose rate were observed. For the 6 MV beam, the field size and depth dependencies of the OSL response were within {+-}2.5%. The observed inter-film response variation for films irradiated with the same dose varied from 1% to 3.2% (1 SD), depending on the measurement day. At a depth of 20 cm, 5 cm outside the 20x20 cm{sup 2} 6 and 18 MV beams, an over response of 17% was observed. In contrast to GafChromic and conventional x-ray films, the response of the Al{sub 2}O{sub 3}:C films is

Growth and characterization of highly conducting Al-doped ZnO (AZO) thin films for optoelectronic applications

NASA Astrophysics Data System (ADS)

Sardana, Sanjay K.; Singh, Anil; Srivastava, Sanjay K.; Pandya, Dinesh K.

2018-05-01

A comparative study of undoped ZnO and Al-doped ZnO (AZO) thin films deposited on glass substrate by spray pyrolysis has been carried out at various aqueous molar concentration of zinc acetate. The thin films deposited on glass shows the wurtzite phase of ZnO, confirmed by X-ray diffraction. The optical study shows the high transmittance over 80% in the visible regime. The band gap of AZO thin films shows a blue shift as compared to undoped ZnO, which has been attributed to Burstein-Moss shift. Heat treatment of these samples in vacuum showed the improved conductivity in compared to as-deposited thin films. The electric study shows the minimum resistivity of 8 x 10-3 Ω-cm and carrier concentration of 6.5 × 1019 /cm3 correspond to AZO thin films.

Spin Waves and Transport Properties in Ferromagnetic Co-Al-O and Fe-Al-O Granular Films: A Brillouin Scattering Study

NASA Astrophysics Data System (ADS)

Yoshihara, Akira; Ohnuma, Shigehiro; Fujimori, Hiroyasu; Nakamura, Shintaro; Nojima, Tsutomu

2008-09-01

A systematic Brillouin light scattering (BLS) study on long-wavelength spin waves (SWs) in ferromagnetic TM-Al-O (TM=Co, Fe) nano-granular films with thickness of >1 μm was performed under magnetic fields of up to 4 kOe at room temperature. BLS spectra consist of a pair of bulk SW peaks on both frequency sides and a surface localized SW peak only on the positive frequency side in this study. These SW frequencies as a function of the magnetic field can be fully reproduced by the magnetostatic frequency formula developed for a semi-infinite uniform ferromagnetic medium with an exchange coupling and an in-plane uniaxial magnetic anisotropy. We determined a set of the magnetic constants including the exchange field HE for each film. Combining the exchange field HE with the electrical resistivity ρ for each film at room temperature, we found an inverse-square law given by ρ=a(HE)-2 for both the Co and Fe granular films with aFe=30.3 μΩ\\cdotcm\\cdot(kOe)2 and aCo=22.1 μΩ\\cdotcm\\cdot(kOe)2, respectively.

Longitudinal optical phonon-plasmon coupled modes of degenerate Al-doped ZnO films

NASA Astrophysics Data System (ADS)

Ding, K.; Hu, Q. C.; Lin, W. W.; Huang, J. K.; Huang, F.

2012-07-01

We have investigated the interaction between carriers and polar phonons by using Raman scattering spectroscopy in highly conductive Al-doped ZnO films grown by metalorganic chemical vapor deposition. Different from the longitudinal optical phonon-plasmon coupled modes (LOPPCM) observed in nondegenerate ZnO, an A1(LO)-like mode appears at the low frequency side of the uncoupled A1(LO) mode, and it monotonically shifts to higher frequencies and approaches to the uncoupled A1(LO) mode as Al composition increases. Based on line shape calculations, the A1(LO)-like mode is assigned to the large wave-vector LOPPCM arising from nonconserving scattering dominated by the Al impurity-induced Fröhlich mechanism. Benefiting from the nonmonotonic Al composition dependence of the electron density, it is revealed that the LOPPCM depends mainly on the doping level but not the carrier concentration.

A Technical, User and Cost Comparison Study of Microfiche Duplicate Film Material. Final Report.

ERIC Educational Resources Information Center

Prevel, James J.

A technical, user and cost comparison study was undertaken to provide the Educational Resources Information Clearinghouse (ERIC) staff with data on silver halide, diazo, and vesicular type films for microfiche duplication. This information will allow ERIC to determine if diazo and/or vesicular films should be considered in producing ERIC duplicate…

Microfabrication of SrRuO3 thin films on various oxide substrates using LaAlO3/BaOx sacrificial bilayers

NASA Astrophysics Data System (ADS)

Harada, Takayuki; Tsukazaki, Atsushi

2018-02-01

Oxides provide various fascinating physical properties that could find use in future device applications. However, the physical properties of oxides are often affected by formation of oxygen vacancies during device fabrication processes. In this study, to develop a damage-free patterning process for oxides, we focus on a lift-off process using a sacrificial template layer, by which we can pattern oxide thin films without severe chemical treatment or plasma bombardment. As oxides need high thin-film growth temperature, a sacrificial template needs to be made of thermally stable and easily etchable materials. To meet these requirements, we develop a sacrificial template with a carefully designed bilayer structure. Combining a thermally and chemically stable LaAlO3 and a water-soluble BaOx, we fabricated a LaAlO3/BaOx sacrificial bilayer. The patterned LaAlO3/BaOx sacrificial bilayers were prepared on oxide substrates by room-temperature pulsed laser deposition and standard photolithography process. The structure of the sacrificial bilayer can be maintained even in rather tough conditions needed for oxide thin film growth: several hundred degrees Celsius under high oxygen pressure. Indeed, the LaAlO3/BaOx bilayer is easily removable by sonication in water. We applied the lift-off method using the LaAlO3/BaOx sacrificial bilayer to a representative oxide conductor SrRuO3 and fabricated micron-scale Hall-bar devices. The SrRuO3 channels with the narrowest line width of 5 μm exhibit an almost identical transport property to that of the pristine film, evidencing that the developed process is beneficial for patterning oxides. We show that the LaAlO3/BaOx lift-off process is applicable to various oxide substrates: SrTiO3, MgO, and Al2O3. The new versatile patterning process will expand the range of application of oxide thin films in electronic and photonic devices.

Low-temperature atomic layer epitaxy of AlN ultrathin films by layer-by-layer, in-situ atomic layer annealing.

PubMed

Shih, Huan-Yu; Lee, Wei-Hao; Kao, Wei-Chung; Chuang, Yung-Chuan; Lin, Ray-Ming; Lin, Hsin-Chih; Shiojiri, Makoto; Chen, Miin-Jang

2017-01-03

Low-temperature epitaxial growth of AlN ultrathin films was realized by atomic layer deposition (ALD) together with the layer-by-layer, in-situ atomic layer annealing (ALA), instead of a high growth temperature which is needed in conventional epitaxial growth techniques. By applying the ALA with the Ar plasma treatment in each ALD cycle, the AlN thin film was converted dramatically from the amorphous phase to a single-crystalline epitaxial layer, at a low deposition temperature of 300 °C. The energy transferred from plasma not only provides the crystallization energy but also enhances the migration of adatoms and the removal of ligands, which significantly improve the crystallinity of the epitaxial layer. The X-ray diffraction reveals that the full width at half-maximum of the AlN (0002) rocking curve is only 144 arcsec in the AlN ultrathin epilayer with a thickness of only a few tens of nm. The high-resolution transmission electron microscopy also indicates the high-quality single-crystal hexagonal phase of the AlN epitaxial layer on the sapphire substrate. The result opens a window for further extension of the ALD applications from amorphous thin films to the high-quality low-temperature atomic layer epitaxy, which can be exploited in a variety of fields and applications in the near future.

Low-temperature atomic layer epitaxy of AlN ultrathin films by layer-by-layer, in-situ atomic layer annealing

PubMed Central

Shih, Huan-Yu; Lee, Wei-Hao; Kao, Wei-Chung; Chuang, Yung-Chuan; Lin, Ray-Ming; Lin, Hsin-Chih; Shiojiri, Makoto; Chen, Miin-Jang

2017-01-01

Low-temperature epitaxial growth of AlN ultrathin films was realized by atomic layer deposition (ALD) together with the layer-by-layer, in-situ atomic layer annealing (ALA), instead of a high growth temperature which is needed in conventional epitaxial growth techniques. By applying the ALA with the Ar plasma treatment in each ALD cycle, the AlN thin film was converted dramatically from the amorphous phase to a single-crystalline epitaxial layer, at a low deposition temperature of 300 °C. The energy transferred from plasma not only provides the crystallization energy but also enhances the migration of adatoms and the removal of ligands, which significantly improve the crystallinity of the epitaxial layer. The X-ray diffraction reveals that the full width at half-maximum of the AlN (0002) rocking curve is only 144 arcsec in the AlN ultrathin epilayer with a thickness of only a few tens of nm. The high-resolution transmission electron microscopy also indicates the high-quality single-crystal hexagonal phase of the AlN epitaxial layer on the sapphire substrate. The result opens a window for further extension of the ALD applications from amorphous thin films to the high-quality low-temperature atomic layer epitaxy, which can be exploited in a variety of fields and applications in the near future. PMID:28045075

Oscillatory interaction between O impurities and Al adatoms on Al(111) and its effect on nucleation and growth.

DOE Office of Scientific and Technical Information (OSTI.GOV)

Hansen, Henri; Linke, Udo; Feibelman, Peter Julian

2003-07-01

We present a combined experimental and theoretical study of submonolayer growth in the presence of predeposited immobile impurities. Scanning tunneling microscopy measurements of Al/Al(1 1 1) epitaxy in the presence of oxygen adsorbates show that immobile O impurities influence all aspects of the early stages of homoepitaxial growth on Al(1 1 1). Possible scenarios for modified growth are investigated using kinetic Monte Carlo simulations. Dependences of island density on temperature, impurity concentration and strength and type of adatom-impurity interaction are compared. The comparison shows that the morphology of the growing Al film cannot result from only one interaction type: attractivemore » or repulsive. An oscillatory interaction, suggested by ab initio calculations, is proposed to explain the behavior of the system.« less

Structural and mechanical characterization of Al/Al2O3 nanotube thin film on TiV alloy

NASA Astrophysics Data System (ADS)

Sarraf, M.; Zalnezhad, E.; Bushroa, A. R.; Hamouda, A. M. S.; Baradaran, S.; Nasiri-Tabrizi, B.; Rafieerad, A. R.

2014-12-01

In this study, the fabrication and characterization of Al/Al2O3 nanotubular arrays on Ti-6Al-4V substrate were carried out. To this end, aluminum thin films were deposited as a first coating layer by direct current (DC) magnetron sputtering with the coating conditions of 300 W, 150 °C and 75 V substrate bias voltage. Al2O3 nanotube array as a second layer was grown on the Al layer by electrochemical anodisation at the constant potential of 20 V within different time periods in an electrolyte solution. For annealing the coated substrates, plasma treatment (PT) technique was utilized under various conditions to get the best adhesion strength of coating to the substrate. To characterize the coating layers, micro scratch test, Vickers hardness and field emission of scanning electron microscopy (FESEM) were used. Results show that after the deposition of pure aluminum on the substrate the scratch length, load and failure point were 794.37 μm, 1100 mN and 411.43 μm, respectively. After PT, the best adhesion strength (2038 mN) was obtained at RF power of 60 W. With the increase of the RF power up to 80 W, a reduction in adhesion strength was observed (1525.22 mN). From the microstructural point of view, a homogenous porous structure with an average pore size of 40-60 nm was formed after the anodisation for 10-45 min. During PT, the porous structure was converted to dense alumina layer when the RF power rose from 40 to 80 W. This led to an increase in hardness value from 2.7 to 3.4 GPa. Based on the obtained data, the RF power of 60 W was the optimum condition for plasma treatment of Al/Al2O3 nanotubular arrays on Ti-6Al-4V substrate.

Temperature Mapping of Air Film-Cooled Thermal Barrier Coated Surfaces Using Cr-Doped GdAlO3 Phosphor Thermography

NASA Technical Reports Server (NTRS)

Eldridge, Jeffrey I.; Shyam, Vikram; Wroblewski, Adam C.; Zhu, Dongming; Cuy, Michael D.; Wolfe, Douglas E.

2016-01-01

It has been recently shown that the high luminescence intensity from a Cr-doped GdAlO3 (Cr:GdAlO3) thermographic phosphor enables non-rastered full-field temperature mapping of thermal barrier coating (TBC) surfaces to temperatures above 1000C. In this presentation, temperature mapping by Cr:GdAlO3 based phosphor thermometry of air film-cooled TBC-coated surfaces is demonstrated for both scaled-up cooling hole geometries as well as for actual components in a burner rig test environment. The effects of thermal background radiation and flame chemiluminescence on the measurements are investigated, and advantages of this method over infrared thermography as well as the limitations of this method for studying air film cooling are discussed.

Microstructural and electrical properties of Al/n-type Si Schottky diodes with Au-CuPc nanocomposite films as interlayer

NASA Astrophysics Data System (ADS)

Reddy, P. R. Sekhar; Janardhanam, V.; Jyothi, I.; Chang, Han-Soo; Lee, Sung-Nam; Lee, Myung Sun; Reddy, V. Rajagopal; Choi, Chel-Jong

2017-11-01

Au-CuPc nanocomposite films were prepared by simultaneous evaporation of Au and CuPc with various Au and CuPc concentrations. Microstructural analysis of Au-CuPc films revealed elongated Au cluster formation from isolated Au nanoclusters with increasing Au concentration associated with coalescence of Au clusters. Au-CuPc films with different compositions were employed as interlayer in Al/n-Si Schottky diode. Barrier height and series resistance of the Al/n-Si Schottky diode with Au-CuPc interlayer decreased with increasing Au concentration. This could be associated with the enhancement of electron tunneling between neighboring clusters due to decrease in spacing of Au clusters and formation of conducting paths through the composite material. Interface state density of the Al/n-Si Schottky diode with Au-CuPc interlayer increased with increasing Au concentration. This might be because the inclusion of metal decreases the crystallinity and crystal size of the polymer matrix accompanied by the formation of local defect sites at the places of metal nucleation.

Evolution of dielectric function of Al-doped ZnO thin films with thermal annealing: effect of band gap expansion and free-electron absorption.

PubMed

Li, X D; Chen, T P; Liu, Y; Leong, K C

2014-09-22

Evolution of dielectric function of Al-doped ZnO (AZO) thin films with annealing temperature is observed. It is shown that the evolution is due to the changes in both the band gap and the free-electron absorption as a result of the change of free-electron concentration of the AZO thin films. The change of the electron concentration could be attributed to the activation of Al dopant and the creation/annihilation of the donor-like defects like oxygen vacancy in the thin films caused by annealing.

Electrical and band structural analyses of Ti1-x Al x O y films grown by atomic layer deposition on p-type GaAs

NASA Astrophysics Data System (ADS)

An, Youngseo; Mahata, Chandreswar; Lee, Changmin; Choi, Sungho; Byun, Young-Chul; Kang, Yu-Seon; Lee, Taeyoon; Kim, Jiyoung; Cho, Mann-Ho; Kim, Hyoungsub

2015-10-01

Amorphous Ti1-x Al x O y films in the Ti-oxide-rich regime (x  <  0.5) were deposited on p-type GaAs via atomic layer deposition with titanium isopropoxide, trimethylaluminum, and H2O precursor chemistry. The electrical properties and energy band alignments were examined for the resulting materials with their underlying substrates, and significant frequency dispersion was observed in the accumulation region of the Ti-oxide-rich Ti1-x Al x O y films. Although a further reduction in the frequency dispersion and leakage current (under gate electron injection) could be somewhat achieved through a greater addition of Al-oxide in the Ti1-x Al x O y film, the simultaneous decrease in the dielectric constant proved problematic in finding an optimal composition for application as a gate dielectric on GaAs. The spectroscopic band alignment measurements of the Ti-oxide-rich Ti1-x Al x O y films indicated that the band gaps had a rather slow increase with the addition of Al-oxide, which was primarily compensated for by an increase in the valance band offset, while a nearly-constant conduction band offset with a negative electron barrier height was maintained.

Suppressing the Photocatalytic Activity of TiO2 Nanoparticles by Extremely Thin Al2O3 Films Grown by Gas-Phase Deposition at Ambient Conditions

PubMed Central

Guo, Jing; Valdesueiro, David; Yuan, Shaojun; Liang, Bin; van Ommen, J. Ruud

2018-01-01

This work investigated the suppression of photocatalytic activity of titanium dioxide (TiO2) pigment powders by extremely thin aluminum oxide (Al2O3) films deposited via an atomic-layer-deposition-type process using trimethylaluminum (TMA) and H2O as precursors. The deposition was performed on multiple grams of TiO2 powder at room temperature and atmospheric pressure in a fluidized bed reactor, resulting in the growth of uniform and conformal Al2O3 films with thickness control at sub-nanometer level. The as-deposited Al2O3 films exhibited excellent photocatalytic suppression ability. Accordingly, an Al2O3 layer with a thickness of 1 nm could efficiently suppress the photocatalytic activities of rutile, anatase, and P25 TiO2 nanoparticles without affecting their bulk optical properties. In addition, the influence of high-temperature annealing on the properties of the Al2O3 layers was investigated, revealing the possibility of achieving porous Al2O3 layers. Our approach demonstrated a fast, efficient, and simple route to coating Al2O3 films on TiO2 pigment powders at the multigram scale, and showed great potential for large-scale production development. PMID:29364840

Electron-stimulated reactions in nanoscale water films adsorbed on α-Al 2 O 3 (0001)

DOE PAGES

Petrik, Nikolay G.; Kimmel, Greg A.

2018-01-01

100 eV electrons are stopped in the H 2 O portion of the isotopically-layered nanoscale film on α-Al 2 O 3 (0001) but D 2 is produced at the D 2 O/alumina interface by mobile electronic excitations and/or hydronium ions.

Compositional inhomogeneities in AlGaN thin films grown by molecular beam epitaxy: Effect on MSM UV photodetectors

NASA Astrophysics Data System (ADS)

Pramanik, Pallabi; Sen, Sayantani; Singha, Chirantan; Roy, Abhra Shankar; Das, Alakananda; Sen, Susanta; Bhattacharyya, A.

2016-10-01

Ultraviolet (UV) MSM photodetectors (PD) based on AlGaN alloys find many applications, including flame sensing. In this work we investigate the dependence of AlGaN based photodetectors grown by MBE on the kinetics of growth. MSM photodetectors were fabricated in the interdigitated configuration with Ni/Au contacts having 400 μm finger length and 10 μm finger spacing. Bulk Al0.4Ga0.6N films were grown on to sapphire substrates using an AlN buffer layer. A series of PDs were developed using the Al0.4Ga0.6N films grown under different group III/V flux ratios ranging from stoichiometric conditions to much higher than unity. Upon testing, it was observed that the otherwise identical photodetectors show significant decrease in dark current as AlGaN deposition conditions change from stoichiometric to excess group III, due to reduction of unintentional incorporation of oxygen-related point defects. In addition, the intensity and spectral dependence of the photocurrent also change, showing an extended low energy tail for the former and a sharp and prominent excitonic peak for the latter. The optical transmission measurements indicate a variation in Urbach energy with deposition conditions of the AlGaN films, although they have the same absorption edge. While all samples show a single red-shifted photoluminescence peak at room temperature, upon cooling, multiple higher energy peaks appear in the photoluminescence (PL) spectra, indicating that the alloys contain complex compositional inhomogeneities. Two types of alloy fluctuations, determined by the growth conditions, have been identified that modulate the optoelectronic properties of AlGaN by changing the spatial localization of excitons, thereby altering their stability. We identified that growth under stoichiometric conditions leads to compositional inhomogeneities that play a detrimental role in the operation of MSM photodetectors, which reduces the sharpness of the sensitivity edge, while growth under excess metal

Growth features and spectroscopic structure investigations of nanoprofiled AlN films formed on misoriented GaAs substrates

DOE Office of Scientific and Technical Information (OSTI.GOV)

Seredin, P. V., E-mail: paul@phys.vsu.ru; Goloshchapov, D. L.; Lenshin, A. S.

Nanostructured aluminum-nitride films are formed by reactive ion-plasma sputtering onto GaAs substrates with different orientations. The properties of the films are studied via structural analysis, atomic force microscopy, and infrared and visible–ultraviolet spectroscopy. The aluminum-nitride films can have a refractive index in the range of 1.6–4.0 at a wavelength of ~250 nm and an optical band gap of ~5 eV. It is shown that the morphology, surface composition, and optical characteristics of AlN/GaAs heterophase systems can be controlled using misoriented GaAs substrates.

High-Hall-Mobility Al-Doped ZnO Films Having Textured Polycrystalline Structure with a Well-Defined (0001) Orientation

NASA Astrophysics Data System (ADS)

Nomoto, Junichi; Makino, Hisao; Yamamoto, Tetsuya

2016-06-01

Five hundred-nanometer-thick ZnO-based textured polycrystalline films consisting of 490-nm-thick Al-doped ZnO (AZO) films deposited on 10-nm-thick Ga-doped ZnO (GZO) films exhibited a high Hall mobility ( μ H) of 50.1 cm2/Vs with a carrier concentration ( N) of 2.55 × 1020 cm-3. Firstly, the GZO films were prepared on glass substrates by ion plating with dc arc discharge, and the AZO films were then deposited on the GZO films by direct current magnetron sputtering (DC-MS). The GZO interface layers with a preferential c-axis orientation play a critical role in producing AZO films with texture development of a well-defined (0001) orientation, whereas 500-nm-thick AZO films deposited by only DC-MS showed a mixture of the c-plane and the other plane orientation, to exhibit a μ H of 38.7 cm2/Vs with an N of 2.22 × 1020 cm-3.

The {alpha}-particle excited scintillation response of the liquid phase epitaxy grown LuAG:Ce thin films

DOE Office of Scientific and Technical Information (OSTI.GOV)

Prusa, P.; Cechak, T.; Mares, J. A.

2008-01-28

Liquid phase epitaxy grown Lu{sub 3}Al{sub 5}O{sub 12}:Ce (LuAG:Ce) 20 {mu}m thick films and plate cut from the bulk Czochralski-grown LuAG:Ce crystal were prepared for comparison of photoelectron yield (PhY) and PhY dependence on shaping time (0.5-10 {mu}s). {sup 241}Am ({alpha} particles) was used for excitation. At the 0.5 {mu}s shaping time, the best film shows comparable PhY with the bulk sample. PhY of bulk material increases noticeably more with shaping time than that of the films. Energy resolution of films is better. Influence of Pb{sup 2+} contamination in the films (from the flux) and antisite Lu{sub Al} defect inmore » bulk material is discussed.« less

Effect of N{sub 2} and Ar gas on DC arc plasma generation and film composition from Ti-Al compound cathodes

DOE Office of Scientific and Technical Information (OSTI.GOV)

Zhirkov, Igor, E-mail: igozh@ifm.liu.se; Rosen, Johanna; Oks, Efim

2015-06-07

DC arc plasma from Ti, Al, and Ti{sub 1−x}Al{sub x} (x = 0.16, 0.25, 0.50, and 0.70) compound cathodes has been characterized with respect to plasma chemistry (charged particles) and charge-state-resolved ion energy for Ar and N{sub 2} pressures in the range 10{sup −6} to 3 × 10{sup −2} Torr. Scanning electron microscopy was used for exploring the correlation between the cathode and film composition, which in turn was correlated with the plasma properties. In an Ar atmosphere, the plasma ion composition showed a reduction of Al of approximately 5 at. % compared to the cathode composition, while deposited films were in accordance with the cathodemore » stoichiometry. Introducing N{sub 2} above ∼5 × 10{sup −3} Torr, lead to a reduced Al content in the plasma as well as in the film, and hence a 1:1 correlation between the cathode and film composition cannot be expected in a reactive environment. This may be explained by an influence of the reactive gas on the arc mode and type of erosion of Ti and Al rich contaminations, as well as on the plasma transport. Throughout the investigated pressure range, a higher deposition rate was obtained from cathodes with higher Al content. The origin of generated gas ions was investigated through the velocity rule, stating that the most likely ion velocities of all cathode elements from a compound cathode are equal. The results suggest that the major part of the gas ions in Ar is generated from electron impact ionization, while gas ions in a N{sub 2} atmosphere primarily originate from a nitrogen contaminated layer on the cathode surface. The presented results provide a contribution to the understanding processes of plasma generation from compound cathodes. It also allows for a more reasonable approach to the selection of composite cathode and experimental conditions for thin film depositions.« less

Characterization of aluminum nitride based films with high resolution X-ray fluorescence spectroscopy

NASA Astrophysics Data System (ADS)

Anagnostopoulos, D. F.; Siozios, A.; Patsalas, P.

2018-02-01

X-ray fluorescence spectra of Al based films are measured, using a lab-scale wavelength dispersive flat crystal spectrometer. Various structures of AlN films were studied, like single layered, capped, stratified, nanostructured, crystalline, or amorphous. By optimizing the set-up for enhanced energy resolution and detection efficiency, the measured line shapes of Κα, Kβ, and KLL radiative Auger transitions are shown to be adequately detailed to allow chemical characterization. The chemistry identification is based on the pattern comparison of the emitted line shape from the chemically unknown film and the reference line shapes from standard materials, recorded under identical experimental conditions. The ultimate strength of lab-scale high resolution X-ray fluorescence spectroscopy on film analysis is verified, in cases that ordinary applied techniques like X-ray photoelectron and X-ray diffraction fail, while the characterization refers to the non-destructive determination of the bulk properties of the film and not to its surface, as the probed depth is in the micrometer range.

Gas diffusion ultrabarriers on polymer substrates using Al2O3 atomic layer deposition and SiN plasma-enhanced chemical vapor deposition

NASA Astrophysics Data System (ADS)

Carcia, P. F.; McLean, R. S.; Groner, M. D.; Dameron, A. A.; George, S. M.

2009-07-01

Thin films grown by Al2O3 atomic layer deposition (ALD) and SiN plasma-enhanced chemical vapor deposition (PECVD) have been tested as gas diffusion barriers either individually or as bilayers on polymer substrates. Single films of Al2O3 ALD with thicknesses of ≥10 nm had a water vapor transmission rate (WVTR) of ≤5×10-5 g/m2 day at 38 °C/85% relative humidity (RH), as measured by the Ca test. This WVTR value was limited by H2O permeability through the epoxy seal, as determined by the Ca test for the glass lid control. In comparison, SiN PECVD films with a thickness of 100 nm had a WVTR of ˜7×10-3 g/m2 day at 38 °C/85% RH. Significant improvements resulted when the SiN PECVD film was coated with an Al2O3 ALD film. An Al2O3 ALD film with a thickness of only 5 nm on a SiN PECVD film with a thickness of 100 nm reduced the WVTR from ˜7×10-3 to ≤5×10-5 g/m2 day at 38 °C/85% RH. The reduction in the permeability for Al2O3 ALD on the SiN PECVD films was attributed to either Al2O3 ALD sealing defects in the SiN PECVD film or improved nucleation of Al2O3 ALD on SiN.

Polarization and Fowler-Nordheim tunneling in anodized Al-Al2O3-Au diodes

NASA Astrophysics Data System (ADS)

Hickmott, T. W.

2000-06-01

Polarization in anodic Al2O3 films is measured by using quasi-dc current-voltage (I-V) curves of Al-Al2O3-Au diodes. A reproducible polarization state is established by applying a negative voltage to the Au electrode of a rectifying Al-Al2O3-Au diode. The difference between subsequent I-V curves with Au positive is a measure of polarization in the sample. The magnitude of polarization charge in Al2O3 depends on the anodizing electrolyte. Al2O3 films formed in H2O-based electrolytes have approximately ten times the polarization charge of Al2O3 films formed in ethylene glycol-based electrolyte. Anodizing conditions that produce greater polarizing charge in anodic Al2O3 result in voltage-time curves during anodization under galvanostatic conditions that are nonlinear. Anodic films with greater polarizing charge also have a greater apparent interface capacitance which is independent of Al2O3 thickness. I-V curves of Al-Al2O3-Au diodes for increasing voltage are dominated by polarization. I-V curves for decreasing voltage are reproducible and parallel but depend on the maximum current and voltage reached during the measurement. There is no single current corresponding to a given voltage. I-V curves for decreasing voltage are analyzed assuming that the conduction mechanism is Fowler-Nordheim (FN) tunneling. There is a qualitative difference between the FN tunneling parameters for Al2O3 films formed in H2O-based electrolytes and those formed in ethylene glycol-based electrolyte. For the former the value of the exponential term in the FN analysis increases as the value of maximum voltage and current in an I-V characteristic increases, while the value of the pre-exponential term is nearly constant. For the latter, the exponential term is nearly constant as maximum voltage and current increase, but the pre-exponential term decreases by about 5 decades. Thus polarization charge incorporated during formation of anodized Al2O3 strongly affects the formation of the insulating

[Preparation of large area Al-ZnO thin film by DC magnetron sputtering].

PubMed

Jiao, Fei; Liao, Cheng; Han, Jun-Feng; Zhou, Zhen

2009-03-01

Solar cells of p-CIS/n-buffer/ZnO type, where CIS is (CuInS2, CuInSe2 or intermediates, are thin-film-based devices for the future high-efficiency and low-cost photovoltaic devices. As important thin film, the properties of Al-doped ZnO (AZO) directly affect the parameter of the cell, especially for large volume. In the present paper, AZO semiconductor transparent thin film on soda-lime glass was fabricated using cylindrical zinc-aluminum target, which can not only lower the cost of the target but also make the preparation of large area AZO thin film more easily. Using the DC magnet sputtering techniques and rolling target, high utilization efficiency of target was achieved and large area uniform and directional film was realized. An introduction to DC magnet sputtering techniques for large area film fabrication is given. With different measurement methods, such as X-ray diffraction (XRD) and scan electron microscope (SEM), we analyzed large size film's structure, appearance, and electrical and optical characteristics. The XRD spectrum indicated that the AZO film shows well zinc-blende structure with a preferred (002) growth and the c-axis is oriented normal to the substrate plane. The lattice constant is 5.603 9 nm and the mismatch with CdS thin film is only 2 percent. It absolutely satisfied the demand of the GIGS solar cell. The cross-section of the AZO thin film indicates the columnar structure and the surface morphology shows that the crystal size is about 50 nm that is consistent with the result of XRD spectrum. By the optical transmission curve, not only the high transmission rate over 85 percent in the visible spectrum between 400 nm and 700 nm was showed but also the band gap 3.1 eV was estimated. And all these parameters can meet the demand of the large area module of GIGS solar cell. The result is that using alloy target and Ar gas, and controlling the appropriate pressure of oxygen, we can get directional, condensed, uniform, high transmitting rate, low

Spatial structure of radio frequency ring-shaped magnetized discharge sputtering plasma using two facing ZnO/Al2O3 cylindrical targets for Al-doped ZnO thin film preparation

NASA Astrophysics Data System (ADS)

Sumiyama, Takashi; Fukumoto, Takaya; Ohtsu, Yasunori; Tabaru, Tatsuo

2017-05-01

Spatial structure of high-density radio frequency ring-shaped magnetized discharge plasma sputtering with two facing ZnO/Al2O3 cylindrical targets mounted in ring-shaped hollow cathode has been measured and Al-doped ZnO (AZO) thin film is deposited without substrate heating. The plasma density has a peak at ring-shaped hollow trench near the cathode. The radial profile becomes uniform with increasing the distance from the target cathode. A low ion current flowing to the substrate of 0.19 mA/cm2 is attained. Large area AZO films with a resistivity of 4.1 - 6.7×10-4 Ω cm can be prepared at a substrate room temperature. The transmittance is 84.5 % in a visible region. The surface roughnesses of AZO films are 0.86, 0.68, 0.64, 1.7 nm at radial positions of r = 0, 15, 30, 40 mm, respectively, while diffraction peak of AZO films is 34.26°. The grains exhibit a preferential orientation along (002) axis.

Low-frequency dielectric properties of intrinsic and Al-doped rutile TiO{sub 2} thin films grown by the atomic layer deposition technique

DOE Office of Scientific and Technical Information (OSTI.GOV)

Kassmi, M.; LMOP, El Manar University, Tunis 2092; Pointet, J.

2016-06-28

Dielectric spectroscopy is carried out for intrinsic and aluminum-doped TiO{sub 2} rutile films which are deposited on RuO{sub 2} by the atomic layer deposition technique. Capacitance and conductance are measured in the 0.1 Hz–100 kHz range, for ac electric fields up to 1 MV{sub rms}/cm. Intrinsic films have a much lower dielectric constant than rutile crystals. This is ascribed to the presence of oxygen vacancies which depress polarizability. When Al is substituted for Ti, the dielectric constant further decreases. By considering Al-induced modification of polarizability, a theoretical relationship between the dielectric constant and the Al concentration is proposed. Al doping drastically decreasesmore » the loss in the very low frequency part of the spectrum. However, Al doping has almost no effect on the loss at high frequencies. The effect of Al doping on loss is discussed through models of hopping transport implying intrinsic oxygen vacancies and Al related centers. When increasing the ac electric field in the MV{sub rms}/cm range, strong voltage non-linearities are evidenced in undoped films. The conductance increases exponentially with the ac field and the capacitance displays negative values (inductive behavior). Hopping barrier lowering is proposed to explain high-field effects. Finally, it is shown that Al doping strongly improves the high-field dielectric behavior.« less

Giant photovoltaic effects driven by residual polar field within unit-cell-scale LaAlO3 films on SrTiO3

PubMed Central

Liang, Haixing; Cheng, Long; Zhai, Xiaofang; Pan, Nan; Guo, Hongli; Zhao, Jin; Zhang, Hui; Li, Lin; Zhang, Xiaoqiang; Wang, Xiaoping; Zeng, Changgan; Zhang, Zhenyu; Hou, J. G.

2013-01-01

For polar/nonpolar heterostructures, Maxwell's theory dictates that the electric potential in the polar components will increase divergently with the film thickness. For LaAlO3/SrTiO3, a conceptually intriguing route, termed charge reconstruction, has been proposed to avert such “polar catastrophe”. The existence of a polar potential in LaAlO3 is a prerequisite for the validity of the charge reconstruction picture, yet to date, its direct measurement remains a major challenge. Here we establish unambiguously the existence of the residual polar potential in ultrathin LaAlO3 films on SrTiO3, using a novel photovoltaic device design as an effective probe. The measured lower bound of the residual polar potential is 1.0 V. Such a direct observation of the giant residual polar potential within the unit-cell-scale LaAlO3 films amounts to a definitive experimental evidence for the charge reconstruction picture, and also points to new technological significance of oxide heterostructures in photovoltaic and sensing devices with atomic-scale control. PMID:23756918

Alternative Dielectric Films for rf MEMS Capacitive Switches Deposited using Atomic Layer Deposited Al2O3/ZnO Alloys

DTIC Science & Technology

2006-07-02

A s c c s r t h s l © K 1 b c A a e t s C t o 0 d Sensors and Actuators A 135 (2007) 262–272 Alternative dielectric films for rf MEMS capacitive...Zn concentrations in the alloy films , which was lower than expected. Atomic force microscopy images evealed an average surface roughness of 0.27 nm...that was independent of deposition temperature and film composition. The dielectric constants of he Al2O3/ZnO ALD alloys films were calculated to be

Investigation of layered structure SAW devices fabricated using low temperature grown AlN thin film on GaN/sapphire.

PubMed

Lin, Hui-Feng; Wu, Chun-Te; Chien, Wei-Cheng; Chen, Sheng-Wen; Kao, Hui-Ling; Chyi, Jen-Inn; Chen, Jyh-Shin

2005-05-01

Epitaxial AlN films have been grown on GaN/sapphire using helicon sputtering at 300 degrees C. The surface acoustic wave (SAW) filters fabricated on AlN/GaN/sapphire exhibit more superior characteristics than those made on GaN/sapphire. This composite structure of AlN on GaN may bring about the development of high-frequency components, which integrate and use their semiconducting, optoelectronic, and piezoelectric properties.

Clinical comparison of CR and screen film for imaging the critically ill neonate

NASA Astrophysics Data System (ADS)

Andriole, Katherine P.; Brasch, Robert C.; Gooding, Charles A.; Gould, Robert G.; Cohen, Pierre A.; Rencken, Ingo R.; Huang, H. K.

1996-05-01

A clinical comparison of computed radiography (CR) versus screen-film for imaging the critically-ill neonate is performed, utilizing a modified (hybrid) film cassette containing a CR (standard ST-V) imaging plate, a conventional screen and film, allowing simultaneous acquisition of perfectly matched CR and plain film images. For 100 portable neonatal chest and abdominal projection radiographs, plain film was subjectively compared to CR hardcopy. Three pediatric radiologists graded overall image quality on a scale of one (poor) to five (excellent), as well as visualization of various anatomic structures (i.e., lung parenchyma, pulmonary vasculature, tubes/lines) and pathological findings (i.e., pulmonary interstitial emphysema, pleural effusion, pneumothorax). Results analyzed using a combined kappa statistic of the differences between scores from each matched set, combined over the three readers showed no statistically significant difference in overall image quality between screen- film and CR (p equals 0.19). Similarly, no statistically significant difference was seen between screen-film and CR for anatomic structure visualization and for visualization of pathological findings. These results indicate that the image quality of CR is comparable to plain film, and that CR may be a suitable alternative to screen-film imaging for portable neonatal chest and abdominal examinations.

Low voltage operation of IGZO thin film transistors enabled by ultrathin Al2O3 gate dielectric

NASA Astrophysics Data System (ADS)

Ma, Pengfei; Du, Lulu; Wang, Yiming; Jiang, Ran; Xin, Qian; Li, Yuxiang; Song, Aimin

2018-01-01

An ultrathin, 5 nm, Al2O3 film grown by atomic-layer deposition was used as a gate dielectric for amorphous indium-gallium-zinc oxide (a-IGZO) thin-film transistors (TFTs). The Al2O3 layer showed a low surface roughness of 0.15 nm, a low leakage current, and a high breakdown voltage of 6 V. In particular, a very high gate capacitance of 720 nF/cm2 was achieved, making it possible for the a-IGZO TFTs to not only operate at a low voltage of 1 V but also exhibit desirable properties including a low threshold voltage of 0.3 V, a small subthreshold swing of 100 mV/decade, and a high on/off current ratio of 1.2 × 107. Furthermore, even under an ultralow operation voltage of 0.6 V, well-behaved transistor characteristics were still observed with an on/off ratio as high as 3 × 106. The electron transport through the Al2O3 layer has also been analyzed, indicating the Fowler-Nordheim tunneling mechanism.

A comparison of tackified, miniemulsion core-shell acrylic latex films with corresponding particle-blend films: structure-property relationships.

PubMed

Canetta, Elisabetta; Marchal, Jeanne; Lei, Chun-Hong; Deplace, Fanny; König, Alexander M; Creton, Costantino; Ouzineb, Keltoum; Keddie, Joseph L

2009-09-15

Tackifying resins (TRs) are often added to pressure-sensitive adhesive films to increase their peel strength and adhesion energy. In waterborne adhesives, the TR is dispersed in water using surfactants and then blended with colloidal polymers in water (i.e., latex). In such waterborne systems, there are problems with the colloidal stability and difficulty in applying coatings of the particle blends; the films are often hydrophilic and subject to water uptake. Here, an alternative method of making waterborne, tackified adhesives is demonstrated. The TR is incorporated within the core of colloidal polymer particles via miniemulsion polymerization. Atomic force microscopy (AFM) combined with force spectroscopy analysis reveals there is heterogeneity in the distribution of the TR in films made from particle blends and also in films made from miniemulsion polymers. Two populations, corresponding to TR-rich and acrylic-rich components, were identified through analysis of the AFM force-displacement curves. The nanoscale maximum adhesion force and adhesion energy were found to be higher in a miniemulsion film containing 12 wt % tackifying resin in comparison to an equivalent blended film. The macroscale tack and viscoelasticity are interpreted by consideration of the nanoscale structure and properties. The incorporation of tackifying resin through a miniemulsion polymerization process not only offers clear benefits in the processing of the adhesive, but it also leads to enhanced adhesion properties.

Interface Properties of Atomic-Layer-Deposited Al2O3 Thin Films on Ultraviolet/Ozone-Treated Multilayer MoS2 Crystals.

PubMed

Park, Seonyoung; Kim, Seong Yeoul; Choi, Yura; Kim, Myungjun; Shin, Hyunjung; Kim, Jiyoung; Choi, Woong

2016-05-11

We report the interface properties of atomic-layer-deposited Al2O3 thin films on ultraviolet/ozone (UV/O3)-treated multilayer MoS2 crystals. The formation of S-O bonds on MoS2 after low-power UV/O3 treatment increased the surface energy, allowing the subsequent deposition of uniform Al2O3 thin films. The capacitance-voltage measurement of Au-Al2O3-MoS2 metal oxide semiconductor capacitors indicated n-type MoS2 with an electron density of ∼10(17) cm(-3) and a minimum interface trap density of ∼10(11) cm(-2) eV(-1). These results demonstrate the possibility of forming a high-quality Al2O3-MoS2 interface by proper UV/O3 treatment, providing important implications for their integration into field-effect transistors.

Microstructures and growth mechanisms of GaN films epitaxially grown on AlN/Si hetero-structures by pulsed laser deposition at different temperatures.

PubMed

Wang, Wenliang; Yang, Weijia; Lin, Yunhao; Zhou, Shizhong; Li, Guoqiang

2015-11-13

2 inch-diameter GaN films with homogeneous thickness distribution have been grown on AlN/Si(111) hetero-structures by pulsed laser deposition (PLD) with laser rastering technique. The surface morphology, crystalline quality, and interfacial property of as-grown GaN films are characterized in detail. By optimizing the laser rastering program, the ~300 nm-thick GaN films grown at 750 °C show a root-mean-square (RMS) thickness inhomogeneity of 3.0%, very smooth surface with a RMS surface roughness of 3.0 nm, full-width at half-maximums (FWHMs) for GaN(0002) and GaN(102) X-ray rocking curves of 0.7° and 0.8°, respectively, and sharp and abrupt AlN/GaN hetero-interfaces. With the increase in the growth temperature from 550 to 850 °C, the surface morphology, crystalline quality, and interfacial property of as-grown ~300 nm-thick GaN films are gradually improved at first and then decreased. Based on the characterizations, the corresponding growth mechanisms of GaN films grown on AlN/Si hetero-structures by PLD with various growth temperatures are hence proposed. This work would be beneficial to understanding the further insight of the GaN films grown on Si(111) substrates by PLD for the application of GaN-based devices.

Microstructures and growth mechanisms of GaN films epitaxially grown on AlN/Si hetero-structures by pulsed laser deposition at different temperatures

PubMed Central

Wang, Wenliang; Yang, Weijia; Lin, Yunhao; Zhou, Shizhong; Li, Guoqiang

2015-01-01

2 inch-diameter GaN films with homogeneous thickness distribution have been grown on AlN/Si(111) hetero-structures by pulsed laser deposition (PLD) with laser rastering technique. The surface morphology, crystalline quality, and interfacial property of as-grown GaN films are characterized in detail. By optimizing the laser rastering program, the ~300 nm-thick GaN films grown at 750 °C show a root-mean-square (RMS) thickness inhomogeneity of 3.0%, very smooth surface with a RMS surface roughness of 3.0 nm, full-width at half-maximums (FWHMs) for GaN(0002) and GaN(102) X-ray rocking curves of 0.7° and 0.8°, respectively, and sharp and abrupt AlN/GaN hetero-interfaces. With the increase in the growth temperature from 550 to 850 °C, the surface morphology, crystalline quality, and interfacial property of as-grown ~300 nm-thick GaN films are gradually improved at first and then decreased. Based on the characterizations, the corresponding growth mechanisms of GaN films grown on AlN/Si hetero-structures by PLD with various growth temperatures are hence proposed. This work would be beneficial to understanding the further insight of the GaN films grown on Si(111) substrates by PLD for the application of GaN-based devices. PMID:26563573

Growth dependent magnetization reversal in Co2MnAl full Heusler alloy thin films

NASA Astrophysics Data System (ADS)

Barwal, Vineet; Husain, Sajid; Behera, Nilamani; Goyat, Ekta; Chaudhary, Sujeet

2018-02-01

Angular dependent magnetization reversal has been investigated in Co2MnAl (CMA) full Heusler alloy thin films grown on Si(100) at different growth temperatures (Ts) by DC-magnetron sputtering. An M -shaped curve is observed in the in-plane angular (0°-360°) dependent coercivity (ADC) by magneto-optical Kerr effect measurements. The dependence of the magnetization reversal on Ts is investigated in detail to bring out the structure-property correlation with regards to ADC in these polycrystalline CMA thin films. This magnetization reversal ( M -shaped ADC behavior) is well described by the two-phase model, which is a combination of Kondorsky (domain wall motion) and Stoner Wohlfarth (coherent rotation) models. In this model, magnetization reversal starts with depinning of domain walls, with their gradual displacement explained by the Kondorsky model, and at a higher field (when the domain walls merge), the system follows coherent rotation before reaching its saturation following the Stoner Wohlfarth model. Further, the analysis of angular dependent squareness ratio (Mr/Ms) indicates that our films clearly exhibited twofold uniaxial anisotropy, which is related to self-steering effect arising due to the obliquely incident flux during the film-growth.

Microstructure and dielectric properties of piezoelectric magnetron sputtered w-Sc{sub x}Al{sub 1-x}N thin films

DOE Office of Scientific and Technical Information (OSTI.GOV)

Zukauskaite, Agne; Wingqvist, Gunilla; Palisaitis, Justinas

2012-05-01

Piezoelectric wurtzite Sc{sub x}Al{sub 1-x}N (x = 0, 0.1, 0.2, 0.3) thin films were epitaxially grown by reactive magnetron co-sputtering from elemental Sc and Al targets. Al{sub 2}O{sub 3}(0001) wafers with TiN(111) seed and electrode layers were used as substrates. X-ray diffraction shows that an increase in the Sc content results in the degradation of the crystalline quality. Samples grown at 400 deg. C possess true dielectric behavior with quite low dielectric losses and the leakage current is negligible. For ScAlN samples grown at 800 deg. C, the crystal structure is poor and leakage current is high. Transmission electron microscopymore » with energy dispersive x-ray spectroscopy mapping shows a mass separation into ScN-rich and AlN-rich domains for x {>=} 0.2 when substrate temperature is increased from 400 to 800 deg. C. The piezoelectric response of epitaxial Sc{sub x}Al{sub 1-x}N films measured by piezoresponse force microscopy and double beam interferometry shows up to 180% increase by the addition of Sc up to x = 0.2 independent of substrate temperature, in good agreement with previous theoretical predictions based on density-functional theory.« less

Transmission electron microscopy study of microstructural properties and dislocation characterization in the GaN film grown on the cone-shaped patterned Al2O3 substrate.

PubMed

Park, Jung Sik; Yang, Jun-Mo; Park, Kyung Jin; Park, Yun Chang; Yoo, Jung Ho; Jeong, Chil Seong; Park, Jucheol; He, Yinsheng; Shin, Keesam

2014-02-01

Growing a GaN film on a patterned Al2O3 substrate is one of the methods of reducing threading dislocations (TDs), which can significantly deteriorate the performance of GaN-based LEDs. In this study, the microstructural details of the GaN film grown on a cone-shaped patterned Al2O3 substrate were investigated using high-resolution transmission electron microscopy and weak-beam dark-field techniques. Various defects such as misfit dislocations (MDs), recrystallized GaN (R-GaN) islands and nano-voids were observed on the patterned Al2O3 surfaces, i.e. the flat surface (FS), the inclined surface (IS) and the top surface (TS), respectively. Especially, the crystallographic orientation of R-GaN between the GaN film and the inclined Al2O3 substrate was identified as $[\\overline 1 2\\overline 1 0]_{{\\rm GaN}} \\hbox{//}[\\overline 1 101]_{{\\rm R - GaN} \\,{\\rm on}\\,{\\rm IS}} \\hbox{//}[\\overline 1 100]_{ {{\\rm Al}} _{\\rm 2} {\\rm O}_{\\rm 3}} $, $(\\overline 1 012)_{{\\rm GaN}} \\hbox{//}(1\\overline 1 02)_{{\\rm R - Ga}\\,{\\rm Non}\\,{\\rm IS}} \\hbox{//}(\\overline {11} 26)_{ {{\\rm Al}} _{\\rm 2} {\\rm O}_{\\rm 3}} $. In addition, a rotation by 9° between $(10\\overline 1 1)_{{\\rm R - GaN}} $ and $(0002)_{{\\rm GaN}} $ and between $(10\\overline 1 1)_{{\\rm R - GaN}} $ and $(0006)_{ {{\\rm Al}} _{\\rm 2} {\\rm O}_{\\rm 3}} $ was found to reduce the lattice mismatch between the GaN film and the Al2O3 substrate. Many TDs in the GaN film were observed on the FS and TS of Al2O3. However, few TDs were observed on the IS. Most of the TDs generated from the FS of Al2O3 were bent to the inclined facet rather than propagating to the GaN surface, resulting in a reduction in the dislocation density. Most of the TDs generated from the TS of Al2O3 were characterized as edge dislocations.

Stress measurement in thin films by geometrical optics

NASA Technical Reports Server (NTRS)

Rossnagel, S. M.; Gilstrap, P.; Rujkorakarn, R.

1982-01-01

A variation of Newton's rings experiment is proposed for measuring film stress. The procedure described, the geometrical optics method, is used to measure radii of curvature for a series of film depositions with Ta, Al, and Mo films. The method has a sensitivity of 1 x 10 to the 9th dyn/sq cm, corresponding to the practical radius limit of about 50 m, and a repeatability usually within five percent. For the purposes of comparison, radii are also measured by Newton's rings method and the Talysurf method; all results are found to be in general agreement. Measurement times are also compared: the geometrical optics method requires only 1/2-1 minute. It is concluded that the geometrical optics method provides an inexpensive, fast, and a reasonably correct technique with which to measure stresses in film.

Thickness and surface roughness study of co-sputtered nanostructured alumina/tungsten (Al2O3/W) thin films

NASA Astrophysics Data System (ADS)

Naveen, A.; Krishnamurthy, L.; Shridhar, T. N.

2018-04-01

Tungsten (W) and Alumina (Al2O3) thin films have been developed using co-sputtering technique on SS304, Copper (Cu) and Glass slides using Direct Current magnetron sputtering (DC) and Radio Frequency (RF) magnetron sputtering methods respectively. Central Composite Design (CCD) method approach has been adopted to determine the number of experimental plans for deposition and DC power, RF power and Argon gas flow rate have been input parameters, each at 5 levels for development of thin films. In this research paper, study has been carried out determine the optimized condition of deposition parameters for thickness and surface roughness of the thin films. Thickness and average Surface roughness in terms of nanometer (nm) have been characterized by thickness profilometer and atomic force microscopy respectively. The maximum and minimum average thickness observed to be 445 nm and 130 respectively. The optimum deposition condition for W/Al2O3 thin film growth was determined to be at 1000 watts of DC power and 800 watts of RF power, 20 minutes of deposition time, and almost 300 Standard Cubic Centimeter(SCCM) of Argon gas flow. It was observed that average roughness difference found to be less than one nanometer on SS substrate and one nanometer on copper approximately.

Out-of-plane easy-axis in thin films of diluted magnetic semiconductor Ba1-xKx(Zn1-yMny)2As2

NASA Astrophysics Data System (ADS)

Wang, R.; Huang, Z. X.; Zhao, G. Q.; Yu, S.; Deng, Z.; Jin, C. Q.; Jia, Q. J.; Chen, Y.; Yang, T. Y.; Jiang, X. M.; Cao, L. X.

2017-04-01

Single-phased, single-oriented thin films of Mn-doped ZnAs-based diluted magnetic semiconductor (DMS) Ba1-xKx(Zn1-yMny)2As2 (x = 0.03, 0.08; y = 0.15) have been deposited on Si, SrTiO3, LaAlO3, (La,Sr)(Al,Ta)O3, and MgAl2O4 substrates, respectively. Utilizing a combined synthesis and characterization system excluding the air and further optimizing the deposition parameters, high-quality thin films could be obtained and be measured showing that they can keep inactive-in-air up to more than 90 hours characterized by electrical transport measurements. In comparison with films of x = 0.03 which possess relatively higher resistivity, weaker magnetic performances, and larger energy gap, thin films of x = 0.08 show better electrical and magnetic performances. Strong magnetic anisotropy was found in films of x = 0.08 grown on (La,Sr)(Al,Ta)O3 substrate with their magnetic polarization aligned almost solely on the film growth direction.

Properties of Al- and Ga-doped thin zinc oxide films treated with UV laser radiation

NASA Astrophysics Data System (ADS)

Al-Asedy, Hayder J.; Al-Khafaji, Shuruq A.; Bakhtiar, Hazri; Bidin, Noriah

2018-03-01

This paper reports the Nd:YAG laser irradiation treated modified properties of aluminum (Al) and gallium (Ga) co-doped zinc oxide (ZnO) (AGZO) films prepared on Si-substrate via combined sol-gel and spin-coating method. The impact of varying laser energy (150-200 mJ) on the structure, morphology, electrical and optical properties of such AGZO films were determined. Laser-treated samples were characterized using various analytical tools. Present techniques could achieve a high-quality polycrystalline films compared with those produced via conventional high temperature processing. AGZO films irradiated with third harmonics UV radiation (355 nm) from Nd:YAG laser source revealed very low resistivity of 4.02 × 10- 3 Ω cm. The structural properties grain size was calculated firm the X-ray diffraction spectra using the Scherrer equation that increased from 12.7 to 22.5 nm as the annealing laser energy increased from (150-200) mJ. The differences in crystallinity and orientation are explained in terms of the thermal effect caused by laser irradiation. (FESEM) images have been demonstrated that Nd:YAG laser annealing can significantly improve the crystallinity level, densification, and surface flatness of sol-gel derived AGZO thin films that occurred as a result of laser processing. Synthesized AGZO films displayed favorable growth orientation along (101) lattice direction. AGZO films with energy band gap of 3.37-3.41 eV were obtained. Results on the crystallinity, surface morphology, roughness, bonding vibration, absorption, photoluminescence, and resistivity of the laser-irradiated films were analyzed and discussed.

High performance AlScN thin film based surface acoustic wave devices with large electromechanical coupling coefficient

DOE Office of Scientific and Technical Information (OSTI.GOV)

Wang, Wenbo; He, Xingli; Ye, Zhi, E-mail: yezhi@zju.edu.cn, E-mail: jl2@bolton.ac.uk

AlN and AlScN thin films with 27% scandium (Sc) were synthesized by DC magnetron sputtering deposition and used to fabricate surface acoustic wave (SAW) devices. Compared with AlN-based devices, the AlScN SAW devices exhibit much better transmission properties. Scandium doping results in electromechanical coupling coefficient, K{sup 2}, in the range of 2.0% ∼ 2.2% for a wide normalized thickness range, more than a 300% increase compared to that of AlN-based SAW devices, thus demonstrating the potential applications of AlScN in high frequency resonators, sensors, and high efficiency energy harvesting devices. The coupling coefficients of the present AlScN based SAW devices are muchmore » higher than that of the theoretical calculation based on some assumptions for AlScN piezoelectric material properties, implying there is a need for in-depth investigations on the material properties of AlScN.« less

Study on deposition of Al2O3 films by plasma-assisted atomic layer with different plasma sources

NASA Astrophysics Data System (ADS)

Haiying, WEI; Hongge, GUO; Lijun, SANG; Xingcun, LI; Qiang, CHEN

2018-04-01

In this paper, Al2O3 thin films are deposited on a hydrogen-terminated Si substrate by using two home-built electron cyclotron resonance (ECR) and magnetic field enhanced radio frequency plasma-assisted atomic layer deposition (PA-ALD) devices with Al(CH3)3 (trimethylaluminum, TMA) and oxygen plasma used as precursor and oxidant, respectively. The thickness, chemical composition, surface morphology and group reactions are characterized by in situ spectroscopic ellipsometer, x-ray photoelectric spectroscopy, atomic force microscopy, scanning electron microscopy, a high-resolution transmission electron microscope and in situ mass spectrometry (MS), respectively. We obtain that both ECR PA-ALD and the magnetic field enhanced PA-ALD can deposit thin films with high density, high purity, and uniformity at a high deposition rate. MS analysis reveals that the Al2O3 deposition reactions are not simple reactions between TMA and oxygen plasma to produce alumina, water and carbon dioxide. In fact, acetylene, carbon monoxide and some other by-products also appear in the exhaustion gas. In addition, the presence of bias voltage has a certain effect on the deposition rate and surface morphology of films, which may be attributed to the presence of bias voltage controlling the plasma energy and density. We conclude that both plasma sources have a different deposition mechanism, which is much more complicated than expected.

Ultrahigh vacuum dc magnetron sputter-deposition of epitaxial Pd(111)/Al2O3(0001) thin films.

PubMed

Aleman, Angel; Li, Chao; Zaid, Hicham; Kindlund, Hanna; Fankhauser, Joshua; Prikhodko, Sergey V; Goorsky, Mark S; Kodambaka, Suneel

2018-05-01

Pd(111) thin films, ∼245 nm thick, are deposited on Al 2 O 3 (0001) substrates at ≈0.5 T m , where T m is the Pd melting point, by ultrahigh vacuum dc magnetron sputtering of Pd target in pure Ar discharges. Auger electron spectra and low-energy electron diffraction patterns acquired in situ from the as-deposited samples reveal that the surfaces are compositionally pure 111-oriented Pd. Double-axis x-ray diffraction (XRD) ω-2θ scans show only the set of Pd 111 peaks from the film. In triple-axis high-resolution XRD, the full width at half maximum intensity Γ ω of the Pd 111 ω-rocking curve is 630 arc sec. XRD 111 pole figure obtained from the sample revealed six peaks 60°-apart at a tilt angles corresponding to Pd 111 reflections. XRD ϕ scans show six 60°-rotated 111 peaks of Pd at the same ϕ angles for 11[Formula: see text]3 of Al 2 O 3 based on which the epitaxial crystallographic relationships between the film and the substrate are determined as [Formula: see text]ǁ[Formula: see text] with two in-plane orientations of [Formula: see text]ǁ[Formula: see text] and [Formula: see text]ǁ[Formula: see text]. Using triple axis symmetric and asymmetric reciprocal space maps, interplanar spacings of out-of-plane (111) and in-plane (11[Formula: see text]) are found to be 0.2242 ± 0.0003 and 0.1591 ± 0.0003 nm, respectively. These values are 0.18% lower than 0.2246 nm for (111) and the same, within the measurement uncertainties, as 0.1588 nm for (11[Formula: see text]) calculated from the bulk Pd lattice parameter, suggesting a small out-of-plane compressive strain and an in-plane tensile strain related to the thermal strain upon cooling the sample from the deposition temperature to room temperature. High-resolution cross-sectional transmission electron microscopy coupled with energy dispersive x-ray spectra obtained from the Pd(111)/Al 2 O 3 (0001) samples indicate that the Pd-Al 2 O 3 interfaces are essentially atomically abrupt and

Brillouin Light Scattering from Magnetic Excitations in Superparamagnetic and Ferromagnetic Co-Al-O Granular Films

NASA Astrophysics Data System (ADS)

Yoshihara, Akira; Maeda, Toshiteru; Kawamura, Satoshi; Nakamura, Shintaro; Nojima, Tsutomu; Takeda, Yoshihiko; Ohnuma, Shigehiro

2018-04-01

A systematic study of Brillouin light scattering (BLS) from superparamagnetic (SPM) and ferromagnetic (FM) Co-Al-O granular films was performed under magnetic fields of up to 4.6 kOe in the standard backscattering geometry at room temperature. The SPM and FM boundary, defined as the Co composition at which the exchange field vanishes, was found to be located at xC(Co) = 59.3 ± 1.3 at. %. From FM films we observed a pair of bulk spin-wave peaks on both the positive- and negative-frequency sides and a surface localized Damon-Eshbach peak only on the positive-frequency side under the present scattering conditions. From SPM films, a pair of broader but propagative excitation peaks with asymmetric intensity were observed on both frequency sides in a spectrum. We performed a numerical analysis of the BLS spectrum by employing the theory developed by Camley and Mills (CM) while retaining dipole and exchange couplings for FM films and only dipole coupling for SPM films. The CM theory successfully reproduced the observed spectrum for both SPM and FM films. The SPM spectrum exhibits a singlet-doublet peak structure similarly to an FM SW spectrum. The SPM peak stems from the dipole-coupled larger-amplitude precession motion of the granule magnetic moment around the external-field-induced magnetization.

Effect of atomic layer deposition temperature on current conduction in Al2O3 films formed using H2O oxidant

NASA Astrophysics Data System (ADS)

Hiraiwa, Atsushi; Matsumura, Daisuke; Kawarada, Hiroshi

2016-08-01

To develop high-performance, high-reliability gate insulation and surface passivation technologies for wide-bandgap semiconductor devices, the effect of atomic layer deposition (ALD) temperature on current conduction in Al2O3 films is investigated based on the recently proposed space-charge-controlled field emission model. Leakage current measurement shows that Al2O3 metal-insulator-semiconductor capacitors formed on the Si substrates underperform thermally grown SiO2 capacitors at the same average field. However, using equivalent oxide field as a more practical measure, the Al2O3 capacitors are found to outperform the SiO2 capacitors in the cases where the capacitors are negatively biased and the gate material is adequately selected to reduce virtual dipoles at the gate/Al2O3 interface. The Al2O3 electron affinity increases with the increasing ALD temperature, but the gate-side virtual dipoles are not affected. Therefore, the leakage current of negatively biased Al2O3 capacitors is approximately independent of the ALD temperature because of the compensation of the opposite effects of increased electron affinity and permittivity in Al2O3. By contrast, the substrate-side sheet of charge increases with increasing ALD temperature above 210 °C and hence enhances the current of positively biased Al2O3 capacitors more significantly at high temperatures. Additionally, an anomalous oscillatory shift of the current-voltage characteristics with ALD temperature was observed in positively biased capacitors formed by low-temperature (≤210 °C) ALD. This shift is caused by dipoles at the Al2O3/underlying SiO2 interface. Although they have a minimal positive-bias leakage current, the low-temperature-grown Al2O3 films cause the so-called blisters problem when heated above 400 °C. Therefore, because of the absence of blistering, a 450 °C ALD process is presently the most promising technology for growing high-reliability Al2O3 films.

Intercalation of biomolecules into NiAl-NO 3 layered double hydroxide films synthesized in situ on anodic alumina/aluminium support

NASA Astrophysics Data System (ADS)

Zhao, Hua-Zhang; Chang, Ying-Yue; Yang, Jing; Yang, Qin-Zheng

2013-03-01

Layered double hydroxide (LDH) films were synthesized in situ on anodic alumina/aluminium (AAO/Al). Glucose oxidase (GOD) and L-ascorbic acid (vitamin C, VC) were intercalated respectively into the in-situ grown LDH films by anion-exchange in aqueous solutions. Dodecylsulfate (SDS) was used to expand the lamellar structure before GOD intercalation into the LDH film. The resulting products were characterized by scanning electron microscopy (SEM), x-ray diffraction (XRD), Fourier transform infrared (FTIR) spectroscopy and thermo gravimetric analysis (TGA). The results showed that VC and GOD were successfully intercalated into the in-situ synthesized LDH film. These biomolecules loaded LDH films could have potential applications in electrode modification, safe storage and effective delivery of bioactive compounds.

Perpendicular magnetic anisotropy and magnetization dynamics in oxidized CoFeAl films

PubMed Central

Wu, Di; Zhang, Zhe; Li, Le; Zhang, Zongzhi; Zhao, H. B.; Wang, J.; Ma, B.; Jin, Q. Y.

2015-01-01

Half-metallic Co-based full-Heusler alloys with perpendicular magnetic anisotropy (PMA), such as Co2FeAl in contact with MgO, are receiving increased attention recently due to its full spin polarization for high density memory applications. However, the PMA induced by MgO interface can only be realized for very thin magnetic layers (usually below 1.3 nm), which would have strong adverse effects on the material properties of spin polarization, Gilbert damping parameter, and magnetic stability. In order to solve this issue, we fabricated oxidized Co50Fe25Al25 (CFAO) films with proper thicknesses without employing the MgO layer. The samples show controllable PMA by tuning the oxygen pressure (PO2) and CFAO thickness (tCFAO), large perpendicular anisotropy field of ~8.0 kOe can be achieved at PO2 = 12% for the sample of tCFAO = 2.1 nm or at PO2 = 7% for tCFAO = 2.8 nm. The loss of PMA at thick tCFAO or high PO2 results mainly from the formation of large amount of CoFe oxides, which are superparamagnetic at room temperature but become hard magnetic at low temperatures. The magnetic CFAO films, with strong PMA in a relatively wide thickness range and small intrinsic damping parameter below 0.028, would find great applications in developing advanced spintronic devices. PMID:26190066

Structure and luminescence properties of Tb3+-doped Lu3Al5O12 films prepared by Pechini sol-gel method

NASA Astrophysics Data System (ADS)

Wang, Jian; Shen, Siqing; Xie, Jianjun; Shi, Ying; Ai, Fei

2011-02-01

Tb3+-doped Lu3Al5O12(hereinafter referred to as LuAG:Tb) films were successfully prepared by Pechini sol-gel process and spin-coating technique on carefully cleaned (111) silicon wafer. The microstructure and optical properties of the LuAG:Tb films were studied by X-ray diffraction (XRD), atomic force microscopy(AFM), as well as photoluminescence (PL) spectra. The XRD results showed that the precursor films started to crystallize at about 900°C. All as-calcined LuAG:Tb films showed the Tb3+ characteristic emission bands.

Structure and luminescence properties of Tb3+-doped Lu3Al5O12 films prepared by Pechini sol-gel method

NASA Astrophysics Data System (ADS)

Wang, Jian; Shen, Siqing; Xie, Jianjun; Shi, Ying; Ai, Fei

2010-10-01

Tb3+-doped Lu3Al5O12(hereinafter referred to as LuAG:Tb) films were successfully prepared by Pechini sol-gel process and spin-coating technique on carefully cleaned (111) silicon wafer. The microstructure and optical properties of the LuAG:Tb films were studied by X-ray diffraction (XRD), atomic force microscopy(AFM), as well as photoluminescence (PL) spectra. The XRD results showed that the precursor films started to crystallize at about 900°C. All as-calcined LuAG:Tb films showed the Tb3+ characteristic emission bands.

Growth and luminescent properties of scintillators based on the single crystalline films of Lu{sub 3−x}Gd{sub x}Al{sub 5}O{sub 12}:Ce garnet

DOE Office of Scientific and Technical Information (OSTI.GOV)

Zorenko, Yu, E-mail: zorenko@ukw.edu.pl; Laboratory for Optoelectronic Materials, Department of Electronics of Ivan Franko National University of Lviv, 79017 Lviv; Gorbenko, V.

Highlights: • Single crystalline films of Lu{sub 3−x}Gd{sub x}Al{sub 5}O{sub 12} garnets at x = 0 ÷ 3.0 were grown by LPE method onto YAG substrates. • Lattice constant of Lu{sub 3−}Gd{sub x}Al{sub 5}O{sub 12}:Ce film and the misfit m between films and YAG substrate changed linearly with increasing of Gd content. • Effective Gd{sup 3+}–Ce{sup 3+} energy transfer occurs in the Lu{sub 3−x}Gd{sub x}Al{sub 5}O{sub 12}:Ce films. • Best scintillation light yield is observed in the Lu{sub 3}Al{sub 5}O{sub 12}:Ce and Lu{sub 2.4}Gd{sub 0.6}Al{sub 5}O{sub 12}:Ce films. • Increase of the Gd content in x = 1.5–2.5 range resultsmore » in decreasing the scintillation LY of Lu{sub 3−x}Gd{sub x}Al{sub 5}O{sub 12}:Ce films. - Abstract: The work is related to the growth of scintillators based on the single crystalline films (SCF) of Ce{sup 3+} doped Lu{sub 3−}Gd{sub x}Al{sub 5}O{sub 12} mixed rare-earth garnets by Liquid Phase Epitaxy (LPE) method. We have shown, that full set of Lu{sub 3−}Gd{sub x}Al{sub 5}O{sub 12} SCFs with x values ranging from 0 to 3.0 can be successfully crystallized by the LPE method onto Y{sub 3}Al{sub 5}O{sub 12} (YAG) substrates from the melt-solutions based on PbO-B{sub 2}O{sub 3} flux. The absorption, X-ray excited luminescence, photoluminescence, thermoluminescence and light yield measurements, the latter under excitation by α-particles of {sup 239}Pu and {sup 241}Am radioisotopes, were applied for their characterization.« less

Atomic moments in Mn 2CoAl thin films analyzed by X-ray magnetic circular dichroism

DOE PAGES

Jamer, M. E.; Assaf, B. A.; Sterbinsky, G. E.; ...

2014-12-05

Spin gapless semiconductors are known to be strongly affected by structural disorder when grown epitaxially as thin films. The magnetic properties of Mn 2CoAl thin films grown on GaAs (001) substrates are investigated here as a function of annealing. This study investigates the atomic-specific magnetic moments of Mn and Co atoms measured through X-ray magnetic circular dichroism as a function of annealing and the consequent structural ordering. Results indicate that the structural distortion mainly affects the Mn atoms as seen by the reduction of the magnetic moment from its predicted value.

Combinatorial refinement of thin-film microstructure, properties and process conditions: iterative nanoscale search for self-assembled TiAlN nanolamellae.

PubMed

Zalesak, J; Todt, J; Pitonak, R; Köpf, A; Weißenbacher, R; Sartory, B; Burghammer, M; Daniel, R; Keckes, J

2016-12-01

Because of the tremendous variability of crystallite sizes and shapes in nano-materials, it is challenging to assess the corresponding size-property relationships and to identify microstructures with particular physical properties or even optimized functions. This task is especially difficult for nanomaterials formed by self-organization, where the spontaneous evolution of microstructure and properties is coupled. In this work, two compositionally graded TiAlN films were (i) grown using chemical vapour deposition by applying a varying ratio of reacting gases and (ii) subsequently analysed using cross-sectional synchrotron X-ray nanodiffraction, electron microscopy and nanoindentation in order to evaluate the microstructure and hardness depth gradients. The results indicate the formation of self-organized hexagonal-cubic and cubic-cubic nanolamellae with varying compositions and thicknesses in the range of ∼3-15 nm across the film thicknesses, depending on the actual composition of the reactive gas mixtures. On the basis of the occurrence of the nanolamellae and their correlation with the local film hardness, progressively narrower ranges of the composition and hardness were refined in three steps. The third film was produced using an AlCl 3 /TiCl 4 precursor ratio of ∼1.9, resulting in the formation of an optimized lamellar microstructure with ∼1.3 nm thick cubic Ti(Al)N and ∼12 nm thick cubic Al(Ti)N nanolamellae which exhibits a maximal hardness of ∼36 GPa and an indentation modulus of ∼522 GPa. The presented approach of an iterative nanoscale search based on the application of cross-sectional synchrotron X-ray nanodiffraction and cross-sectional nanoindentation allows one to refine the relationship between (i) varying deposition conditions, (ii) gradients of microstructure and (iii) gradients of mechanical properties in nanostructured materials prepared as thin films. This is done in a combinatorial way in order to screen a wide range of

Luminescent properties of Al2O3:Ce single crystalline films under synchrotron radiation excitation

NASA Astrophysics Data System (ADS)

Zorenko, Yu.; Zorenko, T.; Gorbenko, V.; Savchyn, V.; Voznyak, T.; Fabisiak, K.; Zhusupkalieva, G.; Fedorov, A.

2016-09-01

The paper is dedicated to study the luminescent and scintillation properties of the Al2O3:Ce single crystalline films (SCF) grown by LPE method onto saphire substrates from PbO based flux. The structural quality of SCF samples was investigated by XRD method. For characterization of luminescent properties of Al2O3:Ce SCFs the cathodoluminescence spectra, scintillation light yield (LY) and decay kinetics under excitation by α-particles of Pu239 source were used. We have found that the scintillation LY of Al2O3:Ce SCF samples is relatively large and can reach up to 50% of the value realized in the reference YAG:Ce SCF. Using the synchrotron radiation excitation in the 3.7-25 eV range at 10 K we have also determined the basic parameters of the Ce3+ luminescence in Al2O3 host.

Characterization of SnO2 Film with Al-Zn Doping Using Sol-Gel Dip Coating Techniques

NASA Astrophysics Data System (ADS)

Doyan, A.; Susilawati; Ikraman, N.; Taufik, M.

2018-04-01

Sn1-2x AlxZnxO2 film has been developed using sol-gel dip coating technique. The materials SnCl2.2H2O, AlCl3 and ZnCl2 dissolved in water and ethanol with 5:95 volume ratio. Variations dopant concentration x = 0.000, 0.005, 0.0025, and 0.050. The film was grown with sol concentration 0.4 M, the withdrawal speed of 12 cm/min and sintering at 600 °C for 30 minutes. The characteristics Sn1-2x AlxZnxO2 films with various doping concentration phase were characterized by XRD. The morphological characteristics and the composition of the constituent elements of the film were characterized by SEM-EDX. The characteristics of the shape, structure, and size of the particles were characterized by TEM. The XRD results show that all films have a tetragonal SnO2 rutile phase without any secondary phase with an average particle size in the range 5.14 – 2.09 nm. The SEM results show that the film grown has a smooth morphology with a striped texture (x = 0.00), and there is a crack (x = 0.050). The EDX results show that the composition and distribution of the constituent elements of the film are uniformly distributed. TEM results show that the particle films has tetragonal rutile structure, orthorhombic and amorphous with a spherical shape.

Effect of deposition temperature on the properties of Al-doped ZnO films prepared by pulsed DC magnetron sputtering for transparent electrodes in thin-film solar cells

NASA Astrophysics Data System (ADS)

Kim, Doo-Soo; Park, Ji-Hyeon; Shin, Beom-Ki; Moon, Kyeong-Ju; Son, Myoungwoo; Ham, Moon-Ho; Lee, Woong; Myoung, Jae-Min

2012-10-01

A simple but scalable approach to the production of surface-textured Al-doped ZnO(AZO) films for low-cost transparent electrode applications in thin-film solar cells is introduced in this study by combining pulsed dc magnetron sputtering (PDMS) with wet etching in sequence. First, structural, electrical, and optical properties of the AZO films prepared by a PDMS were investigated as functions of deposition temperature to obtain transparent electrode films that can be used as indium-free alternative to ITO electrodes. Increase in the deposition temperature to 230 °C accompanied the improvement in crystalline quality and doping efficiency, which enabled the lowest electrical resistivity of 4.16 × 10-4 Ω cm with the carrier concentration of 1.65 × 1021 cm-3 and Hall mobility of 11.3 cm2/V s. The wet etching of the films in a diluted HCl solution resulted in surface roughening via the formation of crater-like structures without significant degradation in the electrical properties, which is responsible for the enhanced light scattering capability required for anti-reflective electrodes in thin film solar cells.

Understanding the Reaction Chemistry of 2,2':5',2''-Terthiophene Films with Vapor-Deposited Ag, Al, and Ca

DOE Office of Scientific and Technical Information (OSTI.GOV)

Sang, Lingzi; Matz, Dallas L.; Pemberton, Jeanne E.

The reaction chemistry of vapor-deposited 2,2':5',2''-terthiophene (α-3T) solid-state thin films with postdeposited Ag, Al, and Ca is investigated in ultrahigh vacuum using Raman spectroscopy. Vapor-deposited Ag forms nanoparticles on these films and induces considerable surface enhanced Raman scattering (SERS) along with a change in molecular symmetry of adjacent α-3T and formation of Ag–S bonds; no other reaction chemistry is observed. Vapor-deposited Al and Ca undergo chemical reaction with α-3T initiated by metal-to-α-3T electron transfer. For Al, the resulting product is predominantly amorphous carbon through initial radical formation and subsequent decomposition reactions. For Ca, the spectral evidence suggests two pathways: onemore » leading to α-3T polymerization and the other resulting in thiophene ring opening, both initiated by radical formation through Ca-to-α-3T electron transfer. These interfacial reactions reflect the complex chemistry that can occur between low work function metals and thiophene-based oligomers. This reactivity is strongly correlated with metal work function.« less

Understanding the Reaction Chemistry of 2,2':5',2"-Terthiophene Films with Vapor-Deposited Ag, Al, and Ca

DOE Office of Scientific and Technical Information (OSTI.GOV)

Sang, Lingzi; Matz, Dallas L.; Pemberton, Jeanne E.

The reaction chemistry of vapor-deposited 2,2':5',2''-terthiophene (α-3T) solid-state thin films with postdeposited Ag, Al, and Ca is investigated in ultrahigh vacuum using Raman spectroscopy. Vapor-deposited Ag forms nanoparticles on these films and induces considerable surface enhanced Raman scattering (SERS) along with a change in molecular symmetry of adjacent α-3T and formation of Ag–S bonds; no other reaction chemistry is observed. Vapor-deposited Al and Ca undergo chemical reaction with α-3T initiated by metal-to-α-3T electron transfer. For Al, the resulting product is predominantly amorphous carbon through initial radical formation and subsequent decomposition reactions. For Ca, the spectral evidence suggests two pathways: onemore » leading to α-3T polymerization and the other resulting in thiophene ring opening, both initiated by radical formation through Ca-to-α-3T electron transfer. These interfacial reactions reflect the complex chemistry that can occur between low work function metals and thiophene-based oligomers. This reactivity is strongly correlated with metal work function.« less

Static and dynamic properties of Co2FeAl thin films: Effect of MgO and Ta as capping layers

NASA Astrophysics Data System (ADS)

Husain, Sajid; Barwal, Vineet; Kumar, Ankit; Behera, Nilamani; Akansel, Serkan; Goyat, Ekta; Svedlindh, Peter; Chaudhary, Sujeet

2017-05-01

The influence of MgO and Ta capping layers on the static and dynamic magnetic properties of Co2FeAl (CFA) Heusler alloy thin films has been investigated. It is observed that the CFA film deposited with MgO capping layer is preeminent compared to the uncapped or Ta capped CFA film. In particular, the magnetic inhomogeneity contribution to the ferromagnetic resonance line broadening and damping constant are found to be minimal for the MgO capped CFA thin film i.e., 0.12±0.01 Oe and 0.0074±0.00014, respectively. The saturation magnetization was found to be 960±25emu/cc.

Decomposition pathways in age hardening of Ti-Al-N films

NASA Astrophysics Data System (ADS)

Rachbauer, R.; Massl, S.; Stergar, E.; Holec, D.; Kiener, D.; Keckes, J.; Patscheider, J.; Stiefel, M.; Leitner, H.; Mayrhofer, P. H.

2011-07-01

The ability to increase the thermal stability of protective coatings under work load gives rise to scientific and industrial interest in age hardening of complex nitride coating systems such as ceramic-like Ti1-xAlxN. However, the decomposition pathway of these systems from single-phase cubic to the thermodynamically stable binary nitrides (cubic TiN and wurtzite AlN), which are essential for age hardening, are not yet fully understood. In particular, the role of decomposition kinetics still requires more detailed investigation. In the present work, the combined effect of annealing time and temperature upon the nano-structural development of Ti0.46Al0.54N thin films is studied, with a thermal exposure of either 1 min or 120 min in 100 °C steps from 500 °C to 1400 °C. The impact of chemical changes at the atomic scale on the development of micro-strain and mechanical properties is studied by post-annealing investigations using X-ray diffraction, nanoindentation, 3D-atom probe tomography and high-resolution transmission electron microscopy. The results clearly demonstrate that the spinodal decomposition process, triggering the increase of micro-strain and hardness, although taking place throughout the entire volume, is enhanced at high diffusivity paths such as grain or column boundaries and followed within the grains. Ab initio calculations further show that the early stages of wurtzite AlN precipitation are connected with increased strain formation, which is in excellent agreement with experimental observations.

Performance Comparison of Axisymmetric and Three-dimensional Hydrogen Film Coolant Injection in a 110N Hydrogen/oxygen Rocket

NASA Technical Reports Server (NTRS)

Arrington, Lynn A.; Reed, Brian D.

1992-01-01

An experimental performance comparison of two geometrically different fuel film coolant injection sleeves was conducted on a 110 N gaseous hydrogen/oxygen rocket. One sleeve had slots milled axially down the walls and the other had a smooth surface to give axisymmetric flow. The comparison was made to investigate a conclusion in an earlier study that attributed a performance underprediction to a symplifying modeling assumption of axisymmetric fuel film flow. The smooth sleeve had higher overall performance at one film coolant percentage and approximately the same or slightly better at another. The study showed that the lack of modeling of three-dimensional effects was not the cause of the performance underprediction as speculated in earlier analytical studies.

Growth of Co2FeAl Heusler alloy thin films on Si(100) having very small Gilbert damping by Ion beam sputtering

NASA Astrophysics Data System (ADS)

Husain, Sajid; Akansel, Serkan; Kumar, Ankit; Svedlindh, Peter; Chaudhary, Sujeet

2016-06-01

The influence of growth temperature Ts (300-773 K) on the structural phase ordering, static and dynamic magnetization behaviour has been investigated in ion beam sputtered full Heusler alloy Co2FeAl (CFA) thin films on industrially important Si(100) substrate. The B2 type magnetic ordering is established in these films based on the clear observation of the (200) diffraction peak. These ion beam sputtered CFA films possess very small surface roughness of the order of subatomic dimensions (<3 Å) as determined from the fitting of XRR spectra and also by AFM imaging. This is supported by the occurrence of distinct Kiessig fringes spanning over the whole scanning range (~4°) in the x-ray reflectivity (XRR) spectra. The Gilbert damping constant α and effective magnetization 4πMeff are found to vary from 0.0053 ± 0.0002 to 0.0015 ± 0.0001 and 13.45 ± 00.03 kG to 14.03 ± 0.04 kG, respectively. These Co2FeAl films possess saturation magnetization ranging from 4.82 ± 0.09 to 5.22 ± 0.10 μB/f.u. consistent with the bulk L21-type ordering. A record low α-value of 0.0015 is obtained for Co2FeAl films deposited on Si substrate at Ts ~ 573 K.

Growth of Co2FeAl Heusler alloy thin films on Si(100) having very small Gilbert damping by Ion beam sputtering.

PubMed

Husain, Sajid; Akansel, Serkan; Kumar, Ankit; Svedlindh, Peter; Chaudhary, Sujeet

2016-06-30

The influence of growth temperature Ts (300-773 K) on the structural phase ordering, static and dynamic magnetization behaviour has been investigated in ion beam sputtered full Heusler alloy Co2FeAl (CFA) thin films on industrially important Si(100) substrate. The B2 type magnetic ordering is established in these films based on the clear observation of the (200) diffraction peak. These ion beam sputtered CFA films possess very small surface roughness of the order of subatomic dimensions (<3 Å) as determined from the fitting of XRR spectra and also by AFM imaging. This is supported by the occurrence of distinct Kiessig fringes spanning over the whole scanning range (~4°) in the x-ray reflectivity (XRR) spectra. The Gilbert damping constant α and effective magnetization 4πMeff are found to vary from 0.0053 ± 0.0002 to 0.0015 ± 0.0001 and 13.45 ± 00.03 kG to 14.03 ± 0.04 kG, respectively. These Co2FeAl films possess saturation magnetization ranging from 4.82 ± 0.09 to 5.22 ± 0.10 μB/f.u. consistent with the bulk L21-type ordering. A record low α-value of 0.0015 is obtained for Co2FeAl films deposited on Si substrate at Ts ~ 573 K.

Growth and patterning of laser ablated superconducting YBa2Cu3O7 films on LaAlO3 substrates

NASA Technical Reports Server (NTRS)

Warner, J. D.; Bhasin, K. B.; Varaljay, N. C.; Bohman, D. Y.; Chorey, C. M.

1989-01-01

A high quality superconducting film on a substrate with a low dielectric constant is desired for passive microwave circuit applications. In addition, it is essential that the patterning process does not effect the superconducting properties of the thin films to achieve the highest circuit operating temperatures. YBa2Cu3O7 superconducting films were grown on lanthanum aluminate substrates using laser ablation with resulting maximum transition temperature (T sub c) of 90 K. The films were grown on a LaAlO3 which was at 775 C and in 170 mtorr of oxygen and slowly cooled to room temperature in 1 atm of oxygen. These films were then processed using photolithography and a negative photoresist with an etch solution of bromine and ethanol. Results are presented on the effect of the processing on T(sub c) of the film and the microwave properties of the patterned films.

Vortex pinning landscape in MOD-TFA YBCO nanostroctured films

NASA Astrophysics Data System (ADS)

Gutierrez, J.; Puig, T.; Pomar, A.; Obradors, X.

2008-03-01

A methodology of general validity to study vortex pinning in YBCO based on Jc transport measurements is described. It permits to identify, separate and quantify three basic vortex pinning contributions associated to anisotropic-strong, isotropic-strong and isotropic-weak pinning centers. Thereof, the corresponding vortex pinning phase diagrams are built up. This methodology is applied to the new solution-derived YBCO nanostructured films, including controlled interfacial pinning by the growth of nanostructured templates by means of self-assembled processes [1] and YBCO-BaZrO3 nanocomposites prepared by modified solution precursors. The application of the methodology and comparison with a standard solution-derived YBCO film [2], enables us to identify the nature and the effect of the additional pinning centers induced. The nanostructured templates films show c-axis pinning strongly increased, controlling most of the pinning phase diagram. On the other hand, the nanocomposites have achieved so far, the highest pinning properties in HTc-superconductors [3], being the isotropic-strong defects contribution the origin of their unique properties. [1] M. Gibert et al, Adv. Mat. vol 19, p. 3937 (2007) [2] Puig.T et al, SuST EUCAS 2007 (to be published) [3] J. Gutierrez et al, Nat. Mat. vol. 6, p. 367 (2007) * Work supported by HIPERCHEM, NANOARTIS and MAT2005-02047

A comparison of the performance of modern screen-film and digital mammography systems.

PubMed

Monnin, P; Gutierrez, D; Bulling, S; Lepori, D; Valley, J-F; Verdun, F R

2005-06-07

This work compares the detector performance and image quality of the new Kodak Min-R EV mammography screen-film system with the Fuji CR Profect detector and with other current mammography screen-film systems from Agfa, Fuji and Kodak. Basic image quality parameters (MTF, NPS, NEQ and DQE) were evaluated for a 28 kV Mo/Mo (HVL = 0.646 mm Al) beam using different mAs exposure settings. Compared with other screen-film systems, the new Kodak Min-R EV detector has the highest contrast and a low intrinsic noise level, giving better NEQ and DQE results, especially at high optical density. Thus, the properties of the new mammography film approach those of a fine mammography detector, especially at low frequency range. Screen-film systems provide the best resolution. The presampling MTF of the digital detector has a value of 15% at the Nyquist frequency and, due to the spread size of the laser beam, the use of a smaller pixel size would not permit a significant improvement of the detector resolution. The dual collection reading technology increases significantly the low frequency DQE of the Fuji CR system that can at present compete with the most efficient mammography screen-film systems.

Fabrication of CuAl1-xMxO2 (M = Fe, Cr)/Ni film delafossite compounds using spin coating and their microstructure and dielectric constant

NASA Astrophysics Data System (ADS)

Diantoro, Markus; Yuwita, Pelangi Eka; Olenka, Desyana; Nasikhudin

2014-09-01

The discovery of delafossite compound has encouraged more rapid technological developments particularly in transparent electronic devices. Copper oxide-based transparent thin films delafossite semiconductor recently give much attention in the field of optoelectronic technology, after the discovery of p-type CuAlO2. The potential applications of a p-type semiconductor transparent conductive oxides (TCO) have been applied in broad field of optoelectronics. To explore a broad physical properties interms of magnetic conducting subtitution is understudied. In this work we report the fabrication of delafossite film on Ni substrate and their characterization of CuAl1-xMxO2 delafossite compounds doped with Cr3+ and Fe3+ from the raw material of Cu(NO3)2˙3H2O, Al(NO3)3˙9H2O, Fe(NO3)3˙9H2O and Cr(NO3)3˙9H2O. The films were prepared using spin coating through a sol-gel technique at various concentrations of x = 0, 0.03, 0.04, and 0.05 for chromium and x = 0, 0.02, 0.04, 0.06, and 0.08 for iron doped. Crystal and microstructure were characterized by means of Cu-Kα Bragg-Brentano X-RD followed by High Score Plus and SEM-EDAX. The dielectric constants of the films were characterized using LCR meter. It was found that the CuAl1-xMxO2/Ni delafossite films were successfully fabricated. The CuAl1-xFexO2 compound crystallized with lattice parameters of a = b ranged from 2.8603 Å to 2.8675 Å and c ranged from 16.9576 to 17.0763 Å. The increase of the dopant give rise to the increase of the lattice parameters. Since iron has bigger ionic radius (69 pm) than original site of Al3+ with radius of 53 pm the crystal volume lattice also increase. Further analyses of increasing volume of the crystal, as expected, affected to the decreasing of its dielectric constant. The similar trends also shown by Cr3+ doped of CuAl1-xCrxO2 films with smaller effects.

Layer configurations comparison of bilayer-films for EGFET pH sensor application

NASA Astrophysics Data System (ADS)

Rahman, R. A.; Zulkefle, M. A.; Yusof, K. A.; Abdullah, W. F. H.; Rusop, M.; Herman, S. H.

2018-05-01

The comparison between bilayer configurations were presented in this paper. TiO2 and ZnO layer configurations were manipulated in order to investigate which configuration produce highest sensing performance to be applied as EGFET pH sensor. Both of the materials were deposited together as the bilayer film. The configurations were manipulated between TiO2/ZnO and ZnO/TiO2. ITO was used as the substrate in this study and both of the materials were deposited by using sol-gel spin coating technique. After deposition process, these bilayer film then undergone for EGFET pH sensor measurement and physical characterization. The EGFET pH sensor measurement was done by dipping the fabricated bilayer film into three different pH values, which is pH4, pH7 and pH10. Bilayer film act as the pH-sensitive membrane, which connected to the commercial metal-oxide semiconductor FET (MOSFET). This MOSFET was connected to the interfacing circuit. Voltage output obtained were recorded and the graph was plotted by using the data recorded. Based on the EGFET pH sensor measurement, TiO2/ZnO bilayer film exhibit higher sensing performance, compared with ZnO/TiO2. TiO2/ZnO bilayer film produced 53.10 mV/pH with the linearity value of 0.9913. Afterwards, fabricated bilayer films then were characterized with AFM to explore their surface roughness and surface topography behavior.

Laser damage properties of TiO{sub 2}/Al{sub 2}O{sub 3} thin films grown by atomic layer deposition

DOE Office of Scientific and Technical Information (OSTI.GOV)

Wei Yaowei; Liu Hao; Sheng Ouyang

2011-08-20

Research on thin film deposited by atomic layer deposition (ALD) for laser damage resistance is rare. In this paper, it has been used to deposit TiO{sub 2}/Al{sub 2}O{sub 3} films at 110 deg. C and 280 deg. C on fused silica and BK7 substrates. Microstructure of the thin films was investigated by x-ray diffraction. The laser-induced damage threshold (LIDT) of samples was measured by a damage test system. Damage morphology was studied under a Nomarski differential interference contrast microscope and further checked under an atomic force microscope. Multilayers deposited at different temperatures were compared. The results show that the filmsmore » deposited by ALD had better uniformity and transmission; in this paper, the uniformity is better than 99% over 100 mm {Phi} samples, and the transmission is more than 99.8% at 1064 nm. Deposition temperature affects the deposition rate and the thin film microstructure and further influences the LIDT of the thin films. As to the TiO{sub 2}/Al{sub 2}O{sub 3} films, the LIDTs were 6.73{+-}0.47 J/cm{sup 2} and 6.5{+-}0.46 J/cm{sup 2} at 110 deg. C on fused silica and BK7 substrates, respectively. The LIDTs at 110 deg. C are notably better than 280 deg. C.« less

Improvement of silicon solar cell efficiency by ion beam sputtered deposition of AlOxNy thin films.

PubMed

Chen, Sheng-Hui; Hsu, Chun-Che; Wang, Hsuan-Wen; Yeh, Chi-Li; Tseng, Shao-Ze; Lin, Hung-Ju; Lee, Cheng-Chung; Peng, Cheng-Yu

2011-03-20

Negative charge material, AlOxNy, has been fabricated to passivate the surface of p-type silicon. The fabrication of AlOxNy was possible by using ion beam sputtering deposition to deposit AlN thin film on the surface of a p-type silicon wafer and following annealing in oxygen ambient. Capacitance-voltage analysis shows the fixed charge density has increased from 10(11) cm(-2) to 2.26×10(12) cm(-2) after annealing. The solar cell efficiency increased from 15.9% to 17.3%, which is also equivalent to the reduction of surface recombination velocity from 1×10(5)  to 32 cm/s.

Grain size engineering for ferroelectric Hf{sub 0.5}Zr{sub 0.5}O{sub 2} films by an insertion of Al{sub 2}O{sub 3} interlayer

DOE Office of Scientific and Technical Information (OSTI.GOV)

Kim, Han Joon; Park, Min Hyuk; Kim, Yu Jin

2014-11-10

The degradation of ferroelectric (FE) properties of atomic layer deposited Hf{sub 0.5}Zr{sub 0.5}O{sub 2} films with increasing thickness was mitigated by inserting 1 nm-thick Al{sub 2}O{sub 3} interlayer at middle position of the thickness of the FE film. The large P{sub r} of 10 μC/cm{sup 2}, which is 11 times larger than that of single layer Hf{sub 0.5}Zr{sub 0.5}O{sub 2} film with equivalent thickness, was achieved from the films as thick as 40 nm. The Al{sub 2}O{sub 3} interlayer could interrupt the continual growth of Hf{sub 0.5}Zr{sub 0.5}O{sub 2} films, and the resulting decrease of grain size prevented the formation of non-ferroelectricmore » monoclinic phase. The Al{sub 2}O{sub 3} interlayer also largely decreased the leakage current of the Hf{sub 0.5}Zr{sub 0.5}O{sub 2} films.« less

Flexible Al-doped ZnO films grown on PET substrates using linear facing target sputtering for flexible OLEDs

NASA Astrophysics Data System (ADS)

Jeong, Jin-A.; Shin, Hyun-Su; Choi, Kwang-Hyuk; Kim, Han-Ki

2010-11-01

We report the characteristics of flexible Al-doped zinc oxide (AZO) films prepared by a plasma damage-free linear facing target sputtering (LFTS) system on PET substrates for use as a flexible transparent conducting electrode in flexible organic light-emitting diodes (OLEDs). The electrical, optical and structural properties of LFTS-grown flexible AZO electrodes were investigated as a function of dc power. We obtained a flexible AZO film with a sheet resistance of 39 Ω/squ and an average transmittance of 84.86% in the visible range although it was sputtered at room temperature without activation of the Al dopant. Due to the effective confinement of the high-density plasma between the facing AZO targets, the AZO film was deposited on the PET substrate without plasma damage and substrate heating caused by bombardment of energy particles. Moreover, the flexible OLED fabricated on the AZO/PET substrate showed performance similar to the OLED fabricated on a ITO/PET substrate in spite of a lower work function. This indicates that LFTS is a promising plasma damage-free and low-temperature sputtering technique for deposition of flexible and indium-free AZO electrodes for use in cost-efficient flexible OLEDs.

Comparative study of textured and epitaxial ZnO films

NASA Astrophysics Data System (ADS)

Ryu, Y. R.; Zhu, S.; Wrobel, J. M.; Jeong, H. M.; Miceli, P. F.; White, H. W.

2000-06-01

ZnO films were synthesized by pulsed laser deposition (PLD) on GaAs and α-Al 2O 3 substrates. The properties of ZnO films on GaAs and α-Al 2O 3 have been investigated to determine the differences between epitaxial and textured ZnO films. ZnO films on GaAs show very strong emission features associated with exciton transitions as do ZnO films on α-Al 2O 3, while the crystalline structural qualities for ZnO films on α-Al 2O 3 are much better than those for ZnO films on GaAs. The properties of ZnO films are studied by comparing highly oriented, textured ZnO films on GaAs with epitaxial ZnO films on α-Al 2O 3 synthesized along the c-axis.

Comparison of selected physico-chemical properties of calcium alginate films prepared by two different methods.

PubMed

Crossingham, Yazmin J; Kerr, Philip G; Kennedy, Ross A

2014-10-01

Sodium alginate (SA) is a naturally occurring, non-toxic, polysaccharide that is able to form gels after exposure to calcium. These gels have been used in food and biomedical industries. This is the first direct comparison of two different methods of calcium alginate film production, namely interfacial gelation (IFG) and dry cast gelation (DCG). IFG films were significantly thicker than DCG films, and were more extensively rehydrated in water and 0.1M HCl than the DCG films. During rehydration in 0.1M HCl almost all calcium ions were lost. Under scanning electron microscopy, IFG films appeared less dense than DCG films. IFG films were mechanically weaker than DCG films, and both types of film were weaker after rehydration in 0.1M HCl compared with deionized water. Permeation of theophylline (TPL) was evaluated in-vitro; the diffusion coefficient (D) of the TPL was almost 90 times lower in DCG films than IFG films when both were rehydrated in water. Although the 0.1M HCl rendered both gels more permeable to TPL, D of TPL was still about five times lower in DCG compared to IFG films. The evaluation of selected physico-chemical properties of films is important, since this information may inform the choice of gelation technique used to produce calcium alginate coatings on pharmaceutical products. Copyright © 2014 Elsevier B.V. All rights reserved.

Isotope analysis of diamond-surface passivation effect of high-temperature H{sub 2}O-grown atomic layer deposition-Al{sub 2}O{sub 3} films

DOE Office of Scientific and Technical Information (OSTI.GOV)

Hiraiwa, Atsushi, E-mail: hiraiwa@aoni.waseda.jp, E-mail: qs4a-hriw@asahi-net.or.jp; Saito, Tatsuya; Matsumura, Daisuke

2015-06-07

The Al{sub 2}O{sub 3} film formed using an atomic layer deposition (ALD) method with trimethylaluminum as Al precursor and H{sub 2}O as oxidant at a high temperature (450 °C) effectively passivates the p-type surface conduction (SC) layer specific to a hydrogen-terminated diamond surface, leading to a successful operation of diamond SC field-effect transistors at 400 °C. In order to investigate this excellent passivation effect, we carried out an isotope analysis using D{sub 2}O instead of H{sub 2}O in the ALD and found that the Al{sub 2}O{sub 3} film formed at a conventional temperature (100 °C) incorporates 50 times more CH{sub 3} groups thanmore » the high-temperature film. This CH{sub 3} is supposed to dissociate from the film when heated afterwards at a higher temperature (550 °C) and causes peeling patterns on the H-terminated surface. The high-temperature film is free from this problem and has the largest mass density and dielectric constant among those investigated in this study. The isotope analysis also unveiled a relatively active H-exchange reaction between the diamond H-termination and H{sub 2}O oxidant during the high-temperature ALD, the SC still being kept intact. This dynamic and yet steady H termination is realized by the suppressed oxidation due to the endothermic reaction with H{sub 2}O. Additionally, we not only observed the kinetic isotope effect in the form of reduced growth rate of D{sub 2}O-oxidant ALD but found that the mass density and dielectric constant of D{sub 2}O-grown Al{sub 2}O{sub 3} films are smaller than those of H{sub 2}O-grown films. This is a new type of isotope effect, which is not caused by the presence of isotopes in the films unlike the traditional isotope effects that originate from the presence of isotopes itself. Hence, the high-temperature ALD is very effective in forming Al{sub 2}O{sub 3} films as a passivation and/or gate-insulation layer of high-temperature-operation diamond SC devices, and the

Microstructure of epitaxial ferroelectric/metal oxide electrode thin film heterostructures on LaAlO{sub 3} and silicon

DOE Office of Scientific and Technical Information (OSTI.GOV)

Ghonge, S.G.; Goo, E.; Ramesh, R.

1994-12-31

TEM and X-ray diffraction studies of PZT, PLZT, lead titanate and bismuth titanate ferroelectric thin films and YBa{sub 2}Cu{sub 3}O{sub 7{minus}x}(YBCO), Bi{sub 2}Sr{sub 2}CaCu{sub 2}O{sub 8}(BSCCO) and La{sub 0.5}Sr{sub 0.5}CoO{sub 3}(LSCO) electrically conductive oxide thin films, that are sequentially deposited by pulsed laser ablation, show that these films may be deposited epitaxially onto LaAlO{sub 3}(LAO) or Si substrates. The conductive oxides are promising candidates for use is electrodes in place of metal electrodes in integrated ferroelectric device applications. The oxide electrodes are more chemically compatible with the ferroelectric films. High resolution electron microscopy his been used to investigate the interfacemore » between the ferroelectric and metal oxide thin films and no reaction was detected. Epitaxial growth is possible due to the similar crystal structures and the small lattice mismatch. The lattice mismatch that is present causes the domains in the ferroelectric films to be preferentially oriented and in the case of lead titanate, the film is single domain. These films may also have potential applications in integrated optical devices.« less

Characterization of deposited CdS thin films by Spray Pyrolysis method and used in Cd/CdS/p-Si/Al structure

NASA Astrophysics Data System (ADS)

Özakın, Oǧuzhan; Aktaş, Şeydanur; Güzeldir, Betül; Saǧlam, Mustafa

2017-04-01

In our study, as p-type crystalline Si substrate was used. Omic contact was performed by evaporating Al metal on the matt surface of crystal. On the other surface of it CdS thin film were enlarged with the technique of Spray Pyrolysis. Structural characteristics of the grown thin film was examined SEM and EDAX image. When examining SEM image of CdS thin film were totally covered the p-Si crystal surface of it was nearly homogeneous and The EDAX spectra showed that the expected different ratios metal percent exist in the alloys, approximately. On the CdS films whose surface features were investigated, at 10-7 torr pressure was obtained Cd/CdS/p-Si/Al sandwich structure by evaporating Cd. Firstly, the I-V (current-voltage) characteristics on 80K between 320K at room temperature of this structure was measured. I-V characteristics of the examined at parameters diodes calculation, Thermionic Emission, were used. The characteristic parameters such as barrier height and ideality factor of this structure have been calculated from the forward bias I-V characteristics. Consequently, it was seen that CdS thin film grown on p-Si semiconductor will be used confidently in Cd/p-Si metal-semiconductor contacts thanks to Spray Pyrolysis method.

Al-/Ga-Doped ZnO Window Layers for Highly Efficient Cu₂ZnSn(S,Se)₄ Thin Film Solar Cells.

PubMed

Seo, Se Won; Seo, Jung Woo; Kim, Donghwan; Cheon, Ki-Beom; Lee, Doh-Kwon; Kim, Jin Young

2018-09-01

The successful use of Al-/Ga-doped ZnO (AGZO) thin films as a transparent conducting oxide (TCO) layer of a Cu2ZnSn(S,Se)4 (CZTSSe) thin film solar cell is demonstrated. The AGZO thin films were prepared by radio frequency (RF) sputtering. The structural, crystallographic, electrical, and optical properties of the AGZO thin films were systematically investigated. The photovoltaic properties of CZTSSe thin film solar cells incorporating the AGZO-based TCO layer were also reported. It has been found that the RF power and substrate temperature of the AGZO thin film are important factors determining the electrical, optical, and structural properties. The optimization process involving the RF power and the substrate temperature leads to good electrical and optical transmittance of the AGZO thin films. Finally, the CZTSSe solar cell with the AGZO TCO layer demonstrated a high conversion efficiency of 9.68%, which is higher than that of the conventional AZO counterpart by 12%.

[Changes in mammographic features of breast cancer--comparison with previous films].

PubMed

Matsunaga, T; Hagiwara, K; Kimura, K; Kusama, M

1992-11-25

Mammographic features of 87 breast cancer patients were studied in comparison with their previous survey films. Changes in the mammographic features included microcalicification (28 cases), tumor shadow (35 cases) and intratumorous microcalicifications (6 cases). Seven cases had several extremely faint calcifications on the previous films, and three of six cases with clustered and scattered microcalcifications that extended over an entire breast quadrant had increased in number, density and extent. Eight cases in which clustered microcalcifications had increased in number, density and extent suggested a relationship between the increase in the extent of microcalcifications and length of time between visits. In most cases with tumor shadow, a slight localized increase in mammary gland density, irregular margins and straightened trabeculae were overlooked because of breast density.

Metastable and equilibrium phase formation in sputter-deposited Ti/Al multilayer thin films

NASA Astrophysics Data System (ADS)

Lucadamo, G.; Barmak, K.; Lavoie, C.; Cabral, C., Jr.; Michaelsen, C.

2002-06-01

The sequence and kinetics of metastable and equilibrium phase formation in sputter deposited multilayer thin films was investigated by combining in situ synchrotron x-ray diffraction (XRD) with ex situ electron diffraction and differential scanning calorimetry (DSC). The sequence included both cubic and tetragonal modifications of the equilibrium TiAl3 crystal structure. Values for the formation activation energies of the various phases in the sequence were determined using the XRD and DSC data obtained here, as well as activation energy data reported in the literature.

Synthesis and characterization of delafossite thin films by reactive RF magnetron sputtering

NASA Astrophysics Data System (ADS)

Asmat Uceda, Martin Antonio

This work presents a comparative study on optical and electrical properties of CuAlO2 thin films on sapphire (0001) substrates deposited with two different growth conditions using reactive RF-magnetron sputtering technique from metallic Cu and Al targets. CuAlO2 is a very promising material for transparent electronic applications, it is intended that comparison of results obtained from both approaches, could lead to optimization and control of the physical properties of this material, namely its electrical conductivity and optical transmittance. All samples were heat treated at 1100°C using rapid thermal annealing with varying time and rate of cooling. The effect of sputtering conditions and different annealing time on phase formation and evolution is studied with X-ray diffraction (XRD) and scanning electron microscopy (SEM). It is found that for most of the samples CuAlO2 phase is formed after 60 min of annealing time, but secondary phases were also present that depend on the deposition conditions. However, pure CuAlO2 phase was obtained for annealed CuO on sapphire films with annealing time of 60 min. The optical properties obtained from UV-Visible spectroscopic measurement reveals indirect and direct optical band gaps for CuAlO2 films and were found to be 2.58 and 3.72 eV respectively. The films show a transmittance of about 60% in the visible range. Hall effect measurements indicate p-type conductivity. Van der Pauw technique was used to measure resistivity of the samples. The highest electrical conductivity and charge carrier concentration obtained were of 1.01x10-1S.cm -1 and 3.63 x1018 cm-3 respectively.

The solid film lubrication by carbon ion implantation into α-Al 2O 3

NASA Astrophysics Data System (ADS)

Jun, Tian; Qizu, Wang; Qunji, Xue

1998-10-01

Improvement in tribological performance by C +110 keV implantation can be achieved by having a more graphite-like carbon structure on Al 2O 3. It was shown that fracture toughness and critical peeling load increased for a fluence of 5 × 10 17C +/cm 2 because of residual compression stress and amorphism of surface. The testing in a different implantation dose indicated that the friction and wear mechanism in Optimol fretting wear machine (SRV) was a combination of surface structure and its abrasive wear. Raman shift shows that the amorphous graphite with 5 × 10 17-1 × 10 18 C +/cm 2 implantation dose was formed on Al 2O 3 surface, so that it reduced friction coefficient and wear of Al 2O 3, also it is noticed that the failure of lubrication due to graphite-like film wear is much earlier in the implantation sample with 1 × 10 17C +/cm 2 dose.

Defect analysis in low temperature atomic layer deposited Al{sub 2}O{sub 3} and physical vapor deposited SiO barrier films and combination of both to achieve high quality moisture barriers

DOE Office of Scientific and Technical Information (OSTI.GOV)

Maindron, Tony, E-mail: tony.maindron@cea.fr; Jullien, Tony; André, Agathe

2016-05-15

very low defect growth rate of 0.032/cm{sup 2}/h (t > τ) have been measured. At the end of the storage test (2003 h), the defect density remains very low, i.e., only 50/cm{sup 2}. On the other hand, the device with the single PVD-deposited SiO barrier layer shows no significant lag time (τ ∼ 0), and the number of defects grows linearly from initial time with a high occurrence rate of 0.517/cm{sup 2}/h. This is coherent with the pinhole-full nature of fresh, PVD-deposited, SiO films. At intermediate times, a second regime shows a lower defect occurrence rate of 0.062/cm{sup 2}/h. At a longer time span (t > 1200 h), the SiO barrier begins to degrade, and a localized crystallization onto the oxide surface, giving rise to new defects (occurrence rate 0.461/cm{sup 2}/h), could be observed. At the end of the test (2003 h), single SiO films show a very high defect density of 600/cm{sup 2}. Interestingly, the SiO surface in the Al{sub 2}O{sub 3}/SiO device does not appeared crystallized at a high time span, suggesting that the crystallization observed on the SiO surface in the AlQ{sub 3}/SiO device rather originates into the AlQ{sub 3} layer, due to high humidity ingress on the organic layer through SiO pinholes. This has been confirmed by atomic force microscopy surface imaging of the AlQ{sub 3}/SiO surface showing a central hole in the crystallization zone with a 60 nm depth, deeper than SiO thickness (25 nm). Using the organic AlQ{sub 3} sensor, the different observations made in this work give a quantitative comparison of defects' occurrence and growth in ALD-deposited versus PVD-deposited oxide films, as well as in their combination PVD/ALD and ALD/PVD.« less

The Effects of Applied Stress and Sensitization on the Passive Film Stability of Al-Mg Alloys

DTIC Science & Technology

2013-06-01

and residual tensile and compressive stresses impact the passive layer film and the material’s electrochemistry. Sample plates of AA5083 were...electrochemistry. Sample plates of AA5083 were sensitized to different levels to promote the formation of intergranular β phase (Al3Mg2). The...41  A.  MATERIAL PROCESSING: FABRICATION AND APPLIED STRESSES OF TEST SAMPLES

Comparison of the physical, chemical and electrical properties of ALD Al 2 O 3 on c- and m- plane GaN: Comparison of the physical, chemical and electrical properties of ALD Al 2 O 3 on c- and m- plane GaN

DOE Office of Scientific and Technical Information (OSTI.GOV)

Wei, D.; Hossain, T.; Nepal, N.

2014-02-01

Our study compares the physical, chemical and electrical properties of Al 2O 3 thin films deposited on gallium polar c- and nonpolar m -plane GaN substrates by atomic layer deposition (ALD). Correlations were sought between the film's structure, composition, and electrical properties. The thickness of the Al 2O 3 films was 19.2 nm as determined from a Si witness sample by spectroscopic ellipsometry. We measured the gate dielectric was slightly aluminum-rich (Al:O=1:1.3) from X-ray photoelectron spectroscopy (XPS) depth profile, and the oxide-semiconductor interface carbon concentration was lower on c -plane GaN. The oxide's surface morphology was similar on both substrates,more » but was smoothest on c -plane GaN as determined by atomic force microscopy (AFM). Circular capacitors (50-300 μm diameter) with Ni/Au (20/100 nm) metal contacts on top of the oxide were created by standard photolithography and e-beam evaporation methods to form metal-oxide-semiconductor capacitors (MOSCAPs). Moreover, the alumina deposited on c -plane GaN showed less hysteresis (0.15 V) than on m -plane GaN (0.24 V) in capacitance-voltage (CV) characteristics, consistent with its better quality of this dielectric as evidenced by negligible carbon contamination and smooth oxide surface. These results demonstrate the promising potential of ALD Al 2O 3 on c -plane GaN, but further optimization of ALD is required to realize the best properties of Al 2O 3 on m -plane GaN.« less

Nano-Al{sub 2}O{sub 3} multilayer film deposition on cotton fabrics by layer-by-layer deposition method

DOE Office of Scientific and Technical Information (OSTI.GOV)

Ugur, Sule S., E-mail: sule@mmf.sdu.edu.tr; Sariisik, Merih; Aktas, A. Hakan

Highlights: {yields} Cationic charges were created on the cotton fibre surfaces with 2,3-epoxypropyltrimethylammonium chloride. {yields} Al{sub 2}O{sub 3} nanoparticles were deposited on the cotton fabrics by layer-by-layer deposition. {yields} The fabrics deposited with the Al{sub 2}O{sub 3} nanoparticles exhibit better UV-protection and significant flame retardancy properties. {yields} The mechanical properties were improved after surface film deposition. -- Abstract: Al{sub 2}O{sub 3} nanoparticles were used for fabrication of multilayer nanocomposite film deposition on cationic cotton fabrics by electrostatic self-assembly to improve the mechanical, UV-protection and flame retardancy properties of cotton fabrics. Cotton fabric surface was modified with a chemical reaction tomore » build-up cationic charge known as cationization. Attenuated Total Reflectance Fourier Transform Infrared Spectroscopy, X-ray Photoelectron Spectroscopy and Scanning Electron Microscopy were used to verify the presence of deposited nanolayers. Air permeability, whiteness value, tensile strength, UV-transmittance and Limited Oxygen Index properties of cotton fabrics were analyzed before and after the treatment of Al{sub 2}O{sub 3} nanoparticles by electrostatic self-assemblies. It was proved that the flame retardancy, tensile strength and UV-transmittance of cotton fabrics can be improved by Al{sub 2}O{sub 3} nanoparticle additive through electrostatic self-assembly process.« less