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Sample records for al films comparison

  1. Solution based prompt inorganic condensation and atomic layer deposition of Al{sub 2}O{sub 3} films: A side-by-side comparison

    SciTech Connect

    Smith, Sean W.; Conley, John F.; Wang, Wei; Keszler, Douglas A.

    2014-07-15

    A comparison was made of Al{sub 2}O{sub 3} films deposited on Si via prompt inorganic condensation (PIC) and atomic layer deposition (ALD). Current–voltage measurements as a function of annealing temperature indicate that the solution-processed PIC films, annealed at 500 °C, exhibit lower leakage and roughly equivalent breakdown strength in comparison to ALD films. PIC films are less dense than as-deposited ALD films and capacitance–voltage measurements indicate a lower relative dielectric constant. On the basis of x-ray photoelectron spectroscopy, transmission electron microscopy, and energy dispersive x-ray spectroscopy, it is found that the 500 °C anneal results in the formation of a ∼6 nm thick interfacial SiO{sub 2} layer at the Si interface. This SiO{sub 2} interfacial layer significantly affects the electrical performance of PIC Al{sub 2}O{sub 3} films deposited on Si.

  2. Comparison of AlN films grown by RF magnetron sputtering and ion-assisted molecular beam epitaxy

    SciTech Connect

    Chan, J.; Fu, T.; Cheung, N.W.; Ross, J.; Newman, N.; Rubin, M.

    1993-04-01

    Crystalline aluminum nitride (AlN) thin films were formed on various substrates by using RF magnetron sputtering of an A1 target in a nitrogen plasma and also by ion-assisted molecular beam epitaxy (IAMBE). Basal-oriented AlN/(111) Si showed a degradation of crystallinity with increased substrate temperature from 550 to 770 C, while the crystallinity of AlN/(0001) A1{sub 2}O{sub 3} samples improved from 700 to 850 C. The optical absorption characteristics of the AlN/(0001) A1{sub 2}O{sub 3} films as grown by both deposition methods revealed a decrease in subbandgap absorption with increased substrate temperature.

  3. Atomic layer deposition of Al-doped ZnO films using ozone as the oxygen source: A comparison of two methods to deliver aluminum

    SciTech Connect

    Yuan Hai; Luo Bing; Yu Dan; Cheng, An-jen; Campbell, Stephen A.; Gladfelter, Wayne L.

    2012-01-15

    Aluminum-doped ZnO films were prepared by atomic layer deposition at 250 deg. C using diethylzinc (DEZ), trimethylaluminum (TMA), and ozone as the precursors. Two deposition methods were compared to assess their impact on the composition, structural, electrical, and optical properties as a function of Al concentration. The first method controlled the Al concentration by changing the relative number of Al to Zn deposition cycles; a process reported in the literature where water was used as the oxygen source. The second method involved coinjection of the DEZ and TMA during each cycle where the partial pressures of the precursors control the aluminum concentration. Depth profiles of the film composition using Auger electron spectroscopy confirmed a layered microstructure for the films prepared by the first method, whereas the second method led to a homogeneous distribution of the aluminum throughout the ZnO film. Beneath the surface layer the carbon concentrations for all of the films were below the detection limit. Comparison of their electrical and optical properties established that films deposited by coinjection of the precursors were superior.

  4. Comparison of Ba sub 2 YCu sub 3 O sub 7 minus. delta. films on NdGaO sub 3 and LaAlO sub 3

    SciTech Connect

    Phillips, J.M.; Siegal, M.P.; Perry, C.L.; Marshall, J.H. )

    1991-03-01

    This paper studies the properties of 100 nm films of Ba{sub 2}YCu{sub 3}O{sub 7{minus}{delta}} (BYCO) grown on LaAlO{sub 3}(100) and NdGaO{sub 3}(100) by co- evaporation of Cy, Y, and BaF{sub 2} followed by a two-stage anneal ex situ. The authors find that the structural properties of the films on both substrates are optimized when the maximum temperature of the anneal is 900{degrees} C, while the superconducting properties are slightly better if the maximum temperature does not exceed 875{degrees} C. Films on LaAlO{sub 3} can tolerate a longer time at the maximum annealing temperature than can films on NdGaP{sub 3}. The authors postulate that this is due to a reaction between Ga in the NdGaO{sub 3} and at least one of the constituents of the BYCO film (probably Y).

  5. Comparison of the microstructure and magnetic properties of strontium hexaferrite films deposited on Al2O3(0001), Si(100)/Pt(111) and Si(100) substrates by pulsed laser technique

    NASA Astrophysics Data System (ADS)

    Masoudpanah, S. M.; Seyyed Ebrahimi, S. A.; Ong, C. K.

    2014-01-01

    Strontium hexaferrite SrFe12O19 (SrM) films have been deposited on Al2O3(0001), Si(100)/Pt(111) and Si(100) substrates. The (001) oriented SrFe12O19 films deposited on the Al2O3(0001) and Si(100)/Pt(111) substrates have been confirmed by X-ray diffraction patterns. Higher coercivity in perpendicular direction rather than in-plane direction of the SrM/Al2O3(0001) and SrM/Pt(111) films showed that the films had perpendicular magnetic anisotropy. The (001) orientation and similar microstructure and magnetic properties of the SrM/Al2O3(0001) and SrM/Pt(111) films show the Al2O3(0001) substrate can be replaced by the Si(100)/Pt(111) substrate.

  6. Ti-Cr-Al-O Thin Film Resistors

    SciTech Connect

    Jankowski, A F; Hayes, J P

    2002-03-21

    Thin films of Ti-Cr-Al-O are produced for use as an electrical resistor material. The films are rf sputter deposited from ceramic targets using a reactive working gas mixture of Ar and O{sub 2}. Vertical resistivity values from 10{sup 4} to 10{sup 10} Ohm-cm are measured for Ti-Cr-Al-O films. The film resistivity can be design selected through control of the target composition and the deposition parameters. The Ti-Cr-Al-O thin film resistor is found to be thermally stable unlike other metal-oxide films.

  7. TI--CR--AL--O thin film resistors

    DOEpatents

    Jankowski, Alan F.; Schmid, Anthony P.

    2000-01-01

    Thin films of Ti--Cr--Al--O are used as a resistor material. The films are rf sputter deposited from ceramic targets using a reactive working gas mixture of Ar and O.sub.2. Resistivity values from 10.sup.4 to 10.sup.10 Ohm-cm have been measured for Ti--Cr--Al--O film <1 .mu.m thick. The film resistivity can be discretely selected through control of the target composition and the deposition parameters. The application of Ti--Cr--Al--O as a thin film resistor has been found to be thermodynamically stable, unlike other metal-oxide films. The Ti--Cr--Al--O film can be used as a vertical or lateral resistor, for example, as a layer beneath a field emission cathode in a flat panel display; or used to control surface emissivity, for example, as a coating on an insulating material such as vertical wall supports in flat panel displays.

  8. Semiconducting properties of Al doped ZnO thin films.

    PubMed

    Al-Ghamdi, Ahmed A; Al-Hartomy, Omar A; El Okr, M; Nawar, A M; El-Gazzar, S; El-Tantawy, Farid; Yakuphanoglu, F

    2014-10-15

    Aluminum doped ZnO (AZO) thin films were successfully deposited via spin coating technique onto glass substrates. Structural properties of the films were analyzed by X-ray diffraction, atomic force microscopy (AFM) and energy dispersive X-ray spectroscopy. X-ray diffraction results reveal that all the films are polycrystalline with a hexagonal wurtzite structure with a preferential orientation according to the direction (002) plane. The crystallite size of ZnO and AZO films was determined from Scherrer's formula and Williamson-Hall analysis. The lattice parameters of the AZO films were found to decrease with increasing Al content. Energy dispersive spectroscopy (EDX) results indicate that Zn, Al and O elements are present in the AZO thin films. The electrical conductivity, mobility carriers and carrier concentration of the films are increased with increasing Al doping concentration. The optical band gap (Eg) of the films is increased with increasing Al concentration. The AZO thin films indicate a high transparency in the visible region with an average value of 86%. These transparent AZO films may be open a new avenue for optoelectronic and photonic devices applications in near future. PMID:24840493

  9. Pit initiation in AlO{sub x}/Al thin films

    SciTech Connect

    Son, K.A.; Barbour, J.C.; Missert, N.; Wall, F.D.; Copeland, R.G.; Martinez, M.A.; Minor, K.G.; Buchheit, R.G.; Isaacs, H.S.

    1998-12-31

    The electrochemical responses of AlO{sub x}/Al thin films have been investigated as a function of film growth conditions which produce films with different grain orientation, size and morphology. Films with smooth, 150 nm diameter, randomly oriented grains show a higher pitting potential and lower passive current than those films with large grain-boundary grooving from a mixture of smooth micron-sized, (200)-oriented grains and 300--500 nm diameter, (220)-oriented grains. These results suggest that surface roughness from grain-boundary grooving affects the pitting resistance more strongly than does the grain boundary density.

  10. Infrared reflectance of AlN-GaN short period superlattice films

    NASA Astrophysics Data System (ADS)

    MacMillan, M. F.; Devaty, R. P.; Choyke, W. J.; Khan, M. Asif; Kuznia, J.

    1996-08-01

    The room-temperature infrared reflectance of AlN-GaN short period superlattice films has been measured. These superlattice films were deposited by switched atomic layer metalorganic chemical vapor deposition onto GaN or AlN buffer layers deposited on basal plane sapphire substrates. The measured reflectance spectra are compared to calculated spectra using an effective medium theory to model the dielectric function of the superlattice. The optical properties of the individual materials making up the samples are modeled with Lorentz oscillators using only bulk input parameters. The effects of film and substrate anisotropy and off-normal incidence are included in the calculation. Using this modeling technique, it is possible to obtain thickness estimates for the superlattice film and the buffer layer. The complicated structures seen in the reststrahl region reflectance of these films are also analyzed by comparison to the calculated spectra.

  11. Microstructure Evolution in Al-Cu-Fe Quasicrystalline Thin Films

    NASA Astrophysics Data System (ADS)

    Widjaja, Edy; Marks, Laurence

    2003-03-01

    Transmission Electron Microscopy (TEM) was performed to study the microstructure evolution in Al-Cu-Fe quasicrystalline thin films. Thin films were grown by magnetron sputtering on sodium chloride crystals which were subsequently dissolved in water to acquire free-standing films. Nanocrystalline films were found in the as-deposited sample. When annealed at 400oC the films changed to metastable crystalline phases that transformed into icosahedral phases upon further annealing at 500oC. TEM imaging combined with electron diffraction revealed various features associated with the phase evolution in the crystalline-quasicrystalline phase transformation. Some grains in the film functioned as sacrificial grains allowing others to grow into icosahedral phases. Elements near the boundary of the sacrificial grains diffused to form the icosahedral phases, resulting in fragments in the center of the grain. The oxide layer of the film was amorphous aluminum oxide that exhibited poor adhesion to the quasicrystalline films.

  12. Phase-separated Al-Si thin films

    SciTech Connect

    Fukutani, Kazuhiko; Tanji, Koichi; Saito, Tatsuya; Den, Tohru

    2005-08-01

    Phase-separated Al-Si films composed of Al nanocylinders embedded in an amorphous-Si matrix have been prepared by a sputtering method. By controlling the deposition rate, substrate temperature, and film composition, the average diameter of the Al cylinders can be varied systematically from less than 5 to 13 nm with a cylinder density ranging from 10{sup 15} to in excess of 10{sup 16} cylinders m{sup -2}. A three-dimensional simulation of phase separation in binary thin films was performed using a modified Cahn-Hilliard [J. Chem. Phys. 28, 258 (1958)] equation to understand the growth mechanism. The simulation studies indicate that the surface diffusion length and film composition are important factors which determine film morphology. Experimental and simulation studies are compared and discussed.

  13. Diamond/AlN Thin Films for Optical Applications

    SciTech Connect

    Knoebber, F.; Bludau, O.; Williams, O. A.; Sah, R. E.; Kirste, L.; Baeumler, M.; Nebel, C. E.; Ambacher, O.; Cimalla, V.; Lebedev, V.; Leopold, S.; Paetz, D.

    2010-11-01

    In this work we report on membranes made of nanocrystalline diamond (NCD) and AlN for the use in tunable micro-optics. For the growth of the AlN and NCD thin films, magnetron sputtering and chemical vapor deposition techniques have been used, respectively. A chemical-mechanical polishing process of NCD layers has been introduced, which is crucial for the growth of c-oriented, fiber textured AlN films. AlN layers deposited on as grown and polished nanocrystalline diamond along with free standing membranes have been compared by studying microstructure, surface morphology, piezoelectrical response as well as optical properties.

  14. Fabrication of Fe-Al nanoparticles by selective oxidation of Fe-Al thin films

    NASA Astrophysics Data System (ADS)

    Jang, Pyungwoo; Shin, Seungchan; Jung, Chip-Sup; Kim, Kwang-Ho; Seomoon, Kyu

    2013-04-01

    The possibility of a new technique for fabricating nanoparticles from thin films using selective oxidation in an atmosphere mixture of water vapor and hydrogen was investigated. Fe-5wt.%Al films were RF-sputtered and annealed in the atmosphere mixture at 900°C for up to 200 min, in order to oxidize aluminum selectively. Thermodynamics simulation showed that temperatures exceeding 800°C are necessary to prevent iron from being oxidized, as confirmed by the depth profile of XPS. As the annealing time increased, the morphology of the 200-nm Fe-Al films changed from the continuous to the discontinuous type; thus, particulate Fe-Al films formed after 100 min. The particulate 10- to 100-nm Fe-Al films showed super-paramagnetic behavior after the oxidation. Thus, a new technique for fabricating nanoparticles was successfully introduced using selective oxidation.

  15. Comparisons of SiN Passivation Film Deposited by PE-CVD and T-CVD Method for AlGaN/GaN HEMTs on SiC Substrate

    NASA Astrophysics Data System (ADS)

    Okita, Hideyuki; Marui, Toshiharu; Hoshi, Shinichi; Itoh, Masanori; Toda, Fumihiko; Morino, Yoshiaki; Tamai, Isao; Sano, Yoshiaki; Seki, Shohei

    Current collapse phenomenon is a well known obstacle in the AlGaN/GaN HEMTs. In order to improve the surface stability of HEMTs, we have investigated the SiN passivation film deposited by T-CVD, and we found that it improves both gate leakage current and current collapse phenomenon [1]. Moreover, we compared the T-CVD and PE-CVD passivation films, on high electric field DC and RF characteristics. We found that T-CVD SiN passivation film improves BVds-off by 30% because of the reduction of gate leakage current. It also improved ηd in the output power characteristics by load-pull measurement, which indicates the decrease of the current collapse phenomenon. Also we fabricated a multi-fingered 50W-class AlGaN/GaN HEMT with T-CVD SiN passivation film and achieved 61.2% of high drain efficiency at frequency of 2.14GHz, which was 3.6 points higher than that with PE-CVD SiN passivation film.

  16. Excimer laser modification of thin AlN films

    NASA Astrophysics Data System (ADS)

    Georgiev, D. G.; Rosenberger, L. W.; Danylyuk, Y. V.; Baird, R. J.; Newaz, G.; Shreve, G.; Auner, G.

    2005-08-01

    The potential of excimer laser micro-processing for surface modification of aluminum nitride (AlN) thin films was studied. Thin films of AlN were deposited by plasma-source molecular beam epitaxy (PSMBE) on silicon and sapphire substrates. These films were then exposed to different fluence levels of KrF ( λ = 248 nm) excimer laser radiation in an ambient air environment, and the changes in the film surface were studied by X-ray photoelectron spectroscopy, atomic force microscopy and optical spectrophotometry. The results show that there is a narrow range of laser fluences, just above 1.0 J/cm 2, within which mostly photochemical transformations of the film surface take place. These transformations consist of both oxidation and decomposition to metallic Al of the original film within a very thin sub-surface layer with thickness of several tens of nanometers. No changes were observed at fluences below 1.0 J/cm 2. Above a fluence of 1.0 J/cm 2, severe photomechanical damage consisting of film cracking and detachment was found to accompany the photochemical and photothermal changes in the film.

  17. Growth of ZnO:Al thin films onto different substrates

    SciTech Connect

    Prepelita, Petronela; Medianu, R.; Garoi, F.; Moldovan, A.

    2010-11-01

    In this paper we present some results regarding undoped and doped ZnO thin films deposited on various substrates like glass, silicon and kapton by rf magnetron sputtering. The influence of the amount of aluminum as well as the usage of different substrates on the final photovoltaic properties of the thin films is studied. For this, structural-morphological and optical investigations on the thin films are conducted. It was found that three important factors must be taken into account for adjusting the final desired application intended for the deposited thin films. These factors are: deposition conditions, the nature of both the dopant material and the substrate. A comparison study between undoped and doped case is also realized. Smooth Al doped ZnO thin films with a polycrystalline structure and a lower roughness than undoped ZnO are obtained.

  18. Origin of carrier scattering in polycrystalline Al-doped ZnO films

    NASA Astrophysics Data System (ADS)

    Jia, Junjun; Oka, Nobuto; Kusayanagi, Minehide; Nakatomi, Satoshi; Shigesato, Yuzo

    2014-10-01

    We observed the carrier transport phenomena in polycrystalline Al-doped ZnO (AZO) films with carrier densities ranging from 2.0 × 1019 to 1.1 × 1021 cm-3. A comparison of the optical carrier density and Hall carrier density indicates that the conduction band in AZO films is nonparabolic above 2.0 × 1020 cm-3. A transition from grain boundary scattering to ionized impurity scattering is observed at a doping level of ˜4.0 × 1020 cm-3. The trap density at the grain boundary increases with increasing Al concentration in the films, implying that the doping level plays a decisive role in the trap density. The excellent fitting of the optical mobility and carrier density using the Brooks-Herring model shows that the acceptor concentration increases with increasing doping level.

  19. Gilbert damping parameter characterization in perpendicular magnetized Co2FeAl films

    NASA Astrophysics Data System (ADS)

    Cui, Yishen; Lu, Jiwei; Khodadadi, Behrouz; Schäfer, Sebastian; Mewes, Tim; Wolf, Stuart

    2013-03-01

    Materials with perpendicular magnetic anisotropy(PMA) have gotten extensive recent attention because of their potential application in spintronic devices such as spin transfer torque random access memory (STT-RAM). It was shown that a much lower switching current density(JC) is required to write STT-RAM tunnel junctions with perpendicular magnetic anisotropy ferromagnetic electrodes (p-MTJ). Additionally Heusler alloy Co2FeAl is expected to further reduce JC due to its ultra low Gilbert damping parameter. In our study, Heusler alloy Co2FeAl films were prepared using a Biased Target Ion Beam Deposition (BTIBD) technique. We demonstrated a low Gilbert damping parameter achieved in thick B2-Co2FeAl films. Besides, we achieved an interfacial PMA in ultra thin Co2FeAl films by rapid thermal annealing (RTA) with no external field presented. Annealing conditions were carefully adjusted to maximize the interfacial PMA. However it was noticed that a higher annealing temperature was required for a low damping parameter which to some extent sacrificed the interfacial PMA. We also deposited ultra thin CoFeB films and characterized their damping parameters for comparison. We acknowledge the financial support from DARPA.

  20. Single-crystal Ti2AlN thin films

    NASA Astrophysics Data System (ADS)

    Joelsson, T.; Hörling, A.; Birch, J.; Hultman, L.

    2005-03-01

    We have produced pure thin-film single-crystal Ti2AlN(0001), a member of the Mn +1AXn class of materials. The method used was UHV dc reactive magnetron sputtering from a 2Ti:Al compound target in a mixed Ar -N2 discharge onto (111) oriented MgO substrates. X-ray diffraction and transmission electron microscopy were used to establish the hexagonal crystal structure with c and a lattice parameters of 13.6 and 3.07Å, respectively. The hardness H, and elastic modulus E, as determined by nanoindentation measurements, were found to be 16.1±1GPa and 270±20GPa, respectively. A room-temperature resistivity for the films of 39μΩcm was obtained.

  1. Differences in n-type doping efficiency between Al- and Ga-ZnO films

    NASA Astrophysics Data System (ADS)

    Gabás, Mercedes; Landa-Cánovas, Angel; Luis Costa-Krämer, José; Agulló-Rueda, Fernando; González-Elipe, Agustín R.; Díaz-Carrasco, Pilar; Hernández-Moro, Jorge; Lorite, Israel; Herrero, Pilar; Castillero, Pedro; Barranco, Angel; Ramón Ramos-Barrado, José

    2013-04-01

    A careful and wide comparison between Al and Ga as substitutional dopants in the ZnO wurtzite structure is presented. Both cations behave as n-type dopants and their inclusion improves the optical and electrical properties of the ZnO matrix, making it more transparent in the visible range and rising up its electrical conductivity. However, the same dopant/Zn ratio leads to a very different doping efficiency when comparing Al and Ga, being the Ga cation a more effective dopant of the ZnO film. The measured differences between Al- and Ga-doped films are explained with the hypothesis that different quantities of these dopant cations are able to enter substitutionally in the ZnO matrix. Ga cations seem to behave as perfect substitutional dopants, while Al cation might occupy either substitutional or interstitial sites. Moreover, the subsequent charge balance after doping appear to be related with the formation of different intrinsic defects that depends on the dopant cation. The knowledge of the doped-ZnO films microstructure is a crucial step to optimize the deposition of transparent conducting electrodes for solar cells, displays, and other photoelectronic devices.

  2. The photosensitivity of carbon quantum dots/CuAlO2 films composites

    NASA Astrophysics Data System (ADS)

    Pan, Jiaqi; Sheng, Yingzhuo; Zhang, Jingxiang; Wei, Jumeng; Huang, Peng; Zhang, Xin; Feng, Boxue

    2015-07-01

    Carbon quantum dots/CuAlO2 films were prepared by a simple route through which CuAlO2 films prepared by sol-gel on crystal quartz substrates were composited with carbon quantum dots on their surface. The characterization results indicated that CuAlO2 films were well combined with carbon quantum dots. The photoconductivity of carbon quantum dots/CuAlO2 films was investigated under illumination and darkness switching, and was demonstrated to be significantly enhanced compared with CuAlO2 films. Through analysis, this enhancement of photoconductivity was attributed to the carbon quantum dots with unique up-converted photoluminescence behavior.

  3. Influences of film thickness on the structural, electrical and optical properties of CuAlO2 thin films

    NASA Astrophysics Data System (ADS)

    Dong, Guobo; Zhang, Ming; Wang, Mei; Li, Yingzi; Gao, Fangyuan; Yan, Hui; Diao, Xungang

    2014-07-01

    CuAlO2 films with different thickness were prepared by the radio frequency magnetron sputtering technique. The structural, electrical and optical properties of CuAlO2 were studied by X-ray diffraction, atomic force microscope, UV-Vis double-beam spectrophotometer and Hall measurements. The results indicate that the single phase hexagonal CuAlO2 is formed and the average grain size of CuAlO2 films increases with increasing film thickness. The results also exhibit that the lowering of bandgap and the increase of electrical conductivity of CuAlO2 films with the increase of their thickness, which are attributed to the improvement of the grain size and the anisotropic electrical property. According to the electrical and optical properties, the biggest figure of merit is achieved for the CuAlO2 film with the appropriate thickness of 165 nm.

  4. Structural, optical and electronic structure studies of Al doped ZnO thin films

    NASA Astrophysics Data System (ADS)

    Devi, Vanita; Kumar, Manish; Shukla, D. K.; Choudhary, R. J.; Phase, D. M.; Kumar, Ravindra; Joshi, B. C.

    2015-07-01

    Structural, optical and electronic structure of Al doped ZnO thin films grown using pulsed laser deposition on glass substrate are investigated. X-ray diffraction measurements reveal that all the films are textured along the c-axis and have wurtzite structure. Al doping in ZnO films leads to increase in grain size due to relaxation in compressive stress. Enhancement in band gap of ZnO films with the Al doping is also noticed which can be ascribed to the Brustein-Moss shift. The changes in the electronic structure caused by Al in the doped thin film samples are understood through X-ray absorption measurements.

  5. Enhanced TC in granular and thin film Al-Al2O3 nanostructures

    NASA Astrophysics Data System (ADS)

    Higgins, J. S.; Greene, R. L.

    It is known since the 1970s that the superconducting transition temperature of granular aluminum films can be as high as two to three times the transition temperature of bulk aluminum, depending on the grain size and how strongly the nanometer size grains are connected1,2. As the strength of the grain connectivity becomes increasingly weak, the enhanced TC is suppressed. The mechanism behind this enhancement is still under debate. Recently, work on larger aluminum nanoparticles (18nm) embedded in an insulating Al2O3 matrix showed an onset of the superconducting transition as high as three times that of bulk aluminum3. In this situation, the Al grains are electrically disconnected and in a regime far removed from that of the granular films. Here we compare the two situations through electronic and thermal measurements in order to help elucidate the mechanism behind the enhancements. 1S. Pracht, et al., arXiv:1508.04270v1 [cond-mat.supr-con] (2015). 2G. Deutscher, New Superconductors From Granular to High TC, New Jersey: World Scientific, 2006, p. 72-74. 3V. N. Smolyaninova, et al., Sci. Rep. 5, 15777 (2015). Funding by NSF DMR # 1410665.

  6. Influence of Content of Al2O3 on Structure and Properties of Nanocomposite Nb-B-Al-O films.

    PubMed

    Liu, Na; Dong, Lei; Dong, Lei; Yu, Jiangang; Pan, Yupeng; Wan, Rongxin; Gu, Hanqing; Li, Dejun

    2015-12-01

    Nb-B-Al-O nanocomposite films with different power of Al2O3 were successfully deposited on the Si substrate via multi-target magnetron co-sputtering method. The influences of Al2O3's content on structure and properties of obtained nanocomposite films through controlling Al2O3's power were investigated. Increasing the power of Al2O3 can influence the bombarding energy and cause the momentum transfer of NbB2. This can lead to the decreasing content of Al2O3. Furthermore, the whole films showed monocrystalline NbB2's (100) phase, and Al2O3 shaded from amorphous to weak cubic-crystalline when decreasing content of Al2O3. This structure and content changes were proof by X-ray diffraction (XRD) and high-resolution transmission electron microscopy (TEM) and X-ray photoelectron spectroscopy (XPS). When NbB2 grains were far from each other in lower power of Al2O3, the whole films showed a typical nanocomposite microstructure with crystalline NbB2 grains embedded in a matrix of an amorphous Al2O3 phase. Continuing increasing the power of Al2O3, the less content of Al2O3 tended to cause crystalline of cubic-Al2O3 between the close distances of different crystalline NbB2 grains. The appearance of cubic-crystallization Al2O3 can help to raise the nanocomposite films' mechanical properties to some extent. The maximum hardness and elastic modulus were up to 21.60 and 332.78 GPa, which were higher than the NbB2 and amorphous Al2O3 monolithic films. Furthermore, this structure change made the chemistry bond of O atom change from the existence of O-Nb, O-B, and O-Al bonds to single O-Al bond and increased the specific value of Al and O. It also influenced the hardness in higher temperature, which made the hardness variation of different Al2O3 content reduced. These results revealed that it can enhance the films' oxidation resistance properties and keep the mechanical properties at high temperature. The study highlighted the importance of controlling the Al2O3's content to prepare

  7. Comparison of Tribological Properties of NiAl Matrix Composites Containing Graphite, Carbon Nanotubes, or Graphene

    NASA Astrophysics Data System (ADS)

    Xu, Zengshi; Zhang, Qiaoxin; Shi, Xiaoliang; Zhai, Wenzheng; Zhu, Qingshuai

    2015-05-01

    To better understand respective lubrication effects and mechanisms of graphite, multi-walled carbon nanotubes (MWNTs), and multilayer graphene (MLG), comparison of tribological properties of NiAl matrix composites (NAMC) containing graphite, MWNTs, or MLG is investigated. Tribological results clearly indicate that the incorporation of solid lubricant remarkably improves the tribological properties of NAMC. NAMC containing MWNTs have better tribological properties than that containing graphite. NAMC containing MLG have the best tribological properties. EPMA, AFM, and FESEM analyses of worn surfaces suggest that the discontinuous island-like solid lubricant-rich films with different compacting extent forms on the worn surfaces of NAMC containing solid lubricant. The worn surface of NAM shows the slighter delamination and comparatively more compact films than that of NAC; in contrast, the worn surface of NAG presents the slightest delamination and the most compact films. It is concluded that graphite, MWNTs, and MLG indeed possess different lubrication effects and mechanisms.

  8. Effect of AC target power on AlN film quality

    SciTech Connect

    Knisely, Katherine Grosh, Karl

    2014-09-01

    The influence of alternating current (AC) target power on film stress, roughness, and x-ray diffraction rocking curve full width half maximum (FWHM) was examined for AlN films deposited using S-gun magnetron sputtering on insulative substrates consisting of Si wafers with 575 nm thermal oxide. As the AC target power was increased from 5 to 8 kW, the deposition rate increased from 9.3 to 15.9 A/s, film stress decreased from 81 to −170 MPa, and the rocking curve FWHM increased from 0.98 to 1.03°. AlN film behavior is observed to change with target life; films deposited at 200 kWh target life were approximately 40 MPa more compressive and had 0.02° degree higher rocking curve FWHM values than films deposited at 130 kWh. AlN films deposited in two depositions were compared with films deposited in a single deposition, in order to better characterize the growth behavior and properties of AlN films deposited on an existing AlN film, which is not well understood. Two deposition films, when compared with single deposition films, showed no variation in residual stress trends or grain size behavior, but the average film roughness increased from 0.7 to 1.4 nm and rocking curve FWHM values increased by more than 0.25°.

  9. Energetic igniters realized by integrating Al/CuO reactive multilayer films with Cr films

    NASA Astrophysics Data System (ADS)

    Zhu, Peng; Shen, Ruiqi; Ye, Yinghua; Zhou, Xiang; Hu, Yan

    2011-10-01

    This paper deals with the energetic igniters realized by integrating Al/CuO reactive multilayer films (RMFs) with Cr Films, which could be used in micro-ignition system. The as-deposited Al/CuO RMFs has been characterized with varied analytical techniques. Results show that distinct Al/CuO RMFs is sputter deposited in a layered geometry, and the Al/CuO RMFs gives a heat of reaction equal to 2760 J/g. The structure of igniter is similar to a capacitor, which may place an electric field across the igniter and allow the instantaneous large-current to drift through the igniter. Firing characteristics of the igniter were accomplished using constant voltage firing set. The experiment shows that the ignition delay time and total released energy of the igniter discharged in 40 V are 0.7 ms and 482.34 mJ, respectively. In addition, the explosion temperature could keep an approximately constant value of 3500 °C for 1.4 ms.

  10. Process for producing Ti-Cr-Al-O thin film resistors

    DOEpatents

    Jankowski, Alan F.; Schmid, Anthony P.

    2001-01-01

    Thin films of Ti-Cr-Al-O are used as a resistor material. The films are rf sputter deposited from ceramic targets using a reactive working gas mixture of Ar and O.sub.2. Resistivity values from 10.sup.4 to 10.sup.10 Ohm-cm have been measured for Ti-Cr-Al-O film <1 .mu.m thick. The film resistivity can be discretely selected through control of the target composition and the deposition parameters. The application of Ti-Cr-Al-O as a thin film resistor has been found to be thermodynamically stable, unlike other metal-oxide films. The Ti-Cr-Al-O film can be used as a vertical or lateral resistor, for example, as a layer beneath a field emission cathode in a flat panel display; or used to control surface emissivity, for example, as a coating on an insulating material such as vertical wall supports in flat panel displays.

  11. Charge Compensated (Al, N) Co-Doped Zinc Oxide (ZnO) Films for Photlelectrochemical Application

    SciTech Connect

    Shet, S.

    2012-01-01

    ZnO thin films with significantly reduced bandgaps were synthesized by doping N and co-doping Al and N at 100oC. All the films were synthesized by radio-frequency magnetron sputtering on F-doped tin-oxide-coated glass. We found that co-doped ZnO:(Al,N) thin films exhibited significantly enhanced crystallinity as compared to ZnO doped solely with N, ZnO:N, at the same growth conditions. Furthermore, annealed ZnO:(Al,N) thin films exhibited enhanced N incorporation over ZnO:N films. As a result, ZnO:(Al,N) films exhibited improved photocurrents than ZnO:N films grown with pure N doping, suggesting that charge-compensated donor-acceptor co-doping could be a potential method for bandgap reduction of wide-bandgap oxide materials to improve their photoelectrochemical performance.

  12. Flat panel display using Ti-Cr-Al-O thin film

    DOEpatents

    Jankowski, Alan F.; Schmid, Anthony P.

    2002-01-01

    Thin films of Ti--Cr--Al--O are used as a resistor material. The films are rf sputter deposited from ceramic targets using a reactive working gas mixture of Ar and O.sub.2. Resistivity values from 10.sup.4 to 10.sup.10 Ohm-cm have been measured for Ti--Cr--Al--O film <1 .mu.m thick. The film resistivity can be discretely selected through control of the target composition and the deposition parameters. The application of Ti--Cr--Al--O as a thin film resistor has been found to be thermodynamically stable, unlike other metal-oxide films. The Ti--Cr--Al--O film can be used as a vertical or lateral resistor, for example, as a layer beneath a field emission cathode in a flat panel display; or used to control surface emissivity, for example, as a coating on an insulating material such as vertical wall supports in flat panel displays.

  13. Characterization of Al2O3 optically stimulated luminescence films for 2D dosimetry using a 6 MV photon beam

    NASA Astrophysics Data System (ADS)

    Ahmed, M. F.; Shrestha, N.; Schnell, E.; Ahmad, S.; Akselrod, M. S.; Yukihara, E. G.

    2016-11-01

    This work evaluates the dosimetric properties of newly developed optically stimulated luminescence (OSL) films, fabricated with either Al2O3:C or Al2O3:C,Mg, using a prototype laser scanning reader, a developed image reconstruction algorithm, and a 6 MV therapeutic photon beam. Packages containing OSL films (Al2O3:C and Al2O3:C,Mg) and a radiochromic film (Gafchromic EBT3) were irradiated using a 6 MV photon beam using different doses, field sizes, with and without wedge filter. Dependence on film orientation of the OSL system was also tested. Diode-array (MapCHECK) and ionization chamber measurements were performed for comparison. The OSLD film doses agreed with the MapCHECK and ionization chamber data within the experimental uncertainties (<2% at 1.5 Gy). The system background and minimum detectable dose (MDD) were  <0.5 mGy, and the dose response was approximately linear from the MDD up to a few grays (the linearity correction was  <10% up to ~2–4 Gy), with no saturation up to 30 Gy. The dose profiles agreed with those obtained using EBT3 films (analyzed using the triple channel method) in the high dose regions of the images. In the low dose regions, the dose profiles from the OSLD films were more reproducible than those from the EBT3 films. We also demonstrated that the OSL film data are independent on scan orientation and field size over the investigated range. The results demonstrate the potential of OSLD films for 2D dosimetry, particularly for the characterization of small fields, due to their wide dynamic range, linear response, resolution and dosimetric properties. The negligible background and potential simple calibration make these OSLD films suitable for remote audits. The characterization presented here may motivate further commercial development of a 2D dosimetry system based on the OSL from Al2O3:C or Al2O3:C,Mg.

  14. Photoemission of Alq{sub 3} and C{sub 60} films on Al and LiF/Al substrates

    SciTech Connect

    Joensson, S.K.M.; Salaneck, W.R.; Fahlman, M.

    2005-07-01

    Photoemission studies of thin films of Alq{sub 3} and C{sub 60} deposited on Al and LiF/Al substrates have been performed in order to deduce the interactions of the organic films with the substrates. For all cases there is evidence of strong interaction resulting in the formation of interfacial dipoles. Attempts to explain the origin of these interfacial dipoles and the type of interface formed in each case have been done through analysis of the valence electronic structure and core levels of the materials. The origin of the interfacial dipoles is mainly covalent interaction when the organic films are deposited on Al substrates, and charge transfer between the organic molecules and the metal through the LiF sandwich layer when the organic films are deposited on LiF/Al substrates. For thick-enough LiF films, however, there is no interaction between the organic films and the substrates. In no case does the LiF dissociate, unlike what is found for the reverse order of deposition. Two charge-transfer-induced gap states are found for (sub)monolayer films of Alq{sub 3} deposited on LiF/Al. We propose that the formation of two gap states corresponds to negatively charged fac-Alq{sub 3}.

  15. Microstructure and mechanical properties of (Ti,Al,Zr)N/(Ti,Al,Zr,Cr)N films on cemented carbide substrates

    NASA Astrophysics Data System (ADS)

    Zhao, Shi-lu; Zhang, Jun; Zhang, Zhen; Wang, Shuang-hong; Zhang, Zheng-gui

    2014-01-01

    (Ti,Al,Zr)N/(Ti,Al,Zr,Cr)N bilayer films were deposited on cemented carbide (WC-8%Co) substrates by multi-arc ion plating (MAIP) using two Ti-Al-Zr alloy targets and one pure Cr target. To investigate the composition, morphology, and crystalline structure of the bilayer films, a number of complementary methods of elemental and structural analysis were used, namely, scanning electron microscopy (SEM), energy disperse X-ray spectroscopy (EDS), and X-ray diffraction (XRD). Adhesive strength and mechanical properties of the films were evaluated by scratch testing and Vickers microindentation, respectively. It is shown that the resulting films have a TiN-type face-centered cubic (FCC) structure. The films exhibit fully dense, uniform, and columnar morphology. Furthermore, as the bias voltages vary from -50 to -200 V, the microhardness (max. Hv0.01 4100) and adhesive strength (max. > 200 N) of the bilayer films are superior to those of the (Ti,Al,Zr)N and (Ti,Al,Zr,Cr)N monolayer films.

  16. Preparation of γ-Al2O3 films by laser chemical vapor deposition

    NASA Astrophysics Data System (ADS)

    Gao, Ming; Ito, Akihiko; Goto, Takashi

    2015-06-01

    γ- and α-Al2O3 films were prepared by chemical vapor deposition using CO2, Nd:YAG, and InGaAs lasers to investigate the effects of varying the laser wavelength and deposition conditions on the phase composition and microstructure. The CO2 laser was found to mostly produce α-Al2O3 films, whereas the Nd:YAG and InGaAs lasers produced γ-Al2O3 films when used at a high total pressure. γ-Al2O3 films had a cauliflower-like structure, while the α-Al2O3 films had a dense and columnar structure. Of the three lasers, it was the Nd:YAG laser that interacted most with intermediate gas species. This promoted γ-Al2O3 nucleation in the gas phase at high total pressure, which explains the cauliflower-like structure of nanoparticles observed.

  17. Thermoelectric properties of Al-doped Mg2Si thin films deposited by magnetron sputtering

    NASA Astrophysics Data System (ADS)

    Chen, Zhi-jian; Zhou, Bai-yang; Li, Jian-xin; Wen, Cui-lian

    2016-11-01

    The Al-doped Mg2Si thin films were fabricated by two-target alternative magnetron sputtering technique, and the influences of different Al doping contents on the thermoelectric properties of Al-doped Mg2Si thin films were investigated. The compositions, crystal structures, electronic transport properties and thermoelectric properties of the thin films were examined using energy dispersive X-ray spectroscopy (EDS), X-ray diffraction (XRD), Hall coefficient measurement and Seebeck coefficient measurement system, respectively. The EDS results show that the thin films doped with Al target sputtering power of 30 W, 60 W and 90 W have the Al content of 0.68 at.%, 1.56 at.% and 2.85 at.%, respectively. XRD results indicate that the diffraction peaks of Mg2Si become stronger with increasing Al dopant. The results of Hall coefficient measurement and Seebeck coefficient measurement system reveal that all the samples are n-type. The conductivities of Al-doped Mg2Si thin films are significantly greater than that of undoped Mg2Si thin film, and increase with increasing Al doping content. With the increase of temperature, the absolute value of the Seebeck coefficients of Mg2Si base thin films increase firstly and then decrease. The maximum power factor obtained is 3.8 mW m-1 k-2 for 1.56 at.% Al-doped Mg2Si thin film at 573 K.

  18. Structure and optical properties of aSiAl and aSiAlHx magnetron sputtered thin films

    NASA Astrophysics Data System (ADS)

    Thøgersen, Annett; Stange, Marit; Jensen, Ingvild J. T.; Røyset, Arne; Ulyashin, Alexander; Diplas, Spyros

    2016-03-01

    Thin films of homogeneous mixture of amorphous silicon and aluminum were produced with magnetron sputtering using 2-phase Al-Si targets. The films exhibited variable compositions, with and without the presence of hydrogen, aSi1-xAlx and aSi1-xAlxHy. The structure and optical properties of the films were investigated using transmission electron microscopy, X-ray photoelectron spectroscopy, UV-VisNIR spectrometry, ellipsometry, and atomistic modeling. We studied the effect of alloying aSi with Al (within the range 0-25 at. %) on the optical band gap, refractive index, transmission, and absorption. Alloying aSi with Al resulted in a non-transparent film with a low band gap (<1 eV). Hydrogenation of the films increased the band gap to values >1 eV. Variations of the Al and hydrogen content allowed for tuning of the optoelectronic properties. The films are stable up to a temperature of 300 °C. At this temperature, we observed Al induced crystallization of the amorphous silicon and the presence of large Al particles in a crystalline Si matrix.

  19. Magnetostrictive behaviors of Fe-Al(001) single-crystal films under rotating magnetic fields

    NASA Astrophysics Data System (ADS)

    Kawai, Tetsuroh; Abe, Tatsuya; Ohtake, Mitsuru; Futamoto, Masaaki

    2016-05-01

    Magnetostrictive behaviors of Fe100-x - Alx(x = 0 - 30 at.%)(001) single-crystal films under rotating magnetic fields are investigated along the two different crystallographic orientations, [100] and [110]. The behaviors of Fe and Fe90Al10 films show bath-tub like waveform along [100], easy magnetization axis, and triangular waveform along [110], hard magnetization axis, with respect to their four-fold magnetic anisotropy. On the other hand, the behaviors of Fe80Al20 film are different from those of Fe or Fe90Al10 film. The output of the film along [100] shows a strong magnetic field dependence. The Fe70Al30 film shows similar magnetostrictive behaviors along both [100] and [110] reflecting its magnetic properties, which are almost same for the both directions. The growth of ordered phase (B2) in Fe80Al20 and Fe70Al30 films is considered to have affected their magnetostrictive behaviors. The Al content dependence on λ100 and λ111 values shows similar tendency to that reported for the bulk samples but the values are slightly different. The Fe90Al10(001) single-crystal film shows a large magnetostriction along [100] under a very small magnetic field of 0.02 kOe, which is comparable to the saturated one, and changes the value abruptly in relation to the angle of applied magnetic field.

  20. Electrical transport in amorphous semiconducting AlMgB14 films

    NASA Astrophysics Data System (ADS)

    Tian, Y.; Li, G.; Shinar, J.; Wang, N. L.; Cook, B. A.; Anderegg, J. W.; Constant, A. P.; Russell, A. M.; Snyder, J. E.

    2004-08-01

    The electrical transport properties of semiconducting AlMgB14 films deposited at room temperature and 573K are reported in this letter. The as-deposited films are amorphous, and they exhibit high n-type electrical conductivity, which is believed to stem from the conduction electrons donated by Al, Mg, and/or Fe impurities in these films. The film deposited at 573K is less conductive than the room-temperature-deposited film. This is attributed to the nature of donor or trap states in the band gap related to the different deposition temperatures.

  1. Interfacial development of electrophoretically deposited graphene oxide films on Al alloys

    SciTech Connect

    Jin, Sumin; Dickerson, James H.; Pham, Viet Hung; Brochu, Mathieu

    2015-07-28

    Adhesion between film and substrate is critical for electronic device and coating applications. Interfacial development between electrophoretically deposited graphene oxide films on Al 1100 and Al 5052 alloys were investigated using FT-IR and XPS depth profiling techniques. Obtained results suggest metal ion permeation from the substrates into deposited graphene oxide films. The interface between the films and the substrates were primarily composed of Al-O-C bonds from oxygenated defects on graphene oxide plane rather than expected Al-C formation. Films heat treated at 150 °C had change in microstructure and peak shifts in XPS spectra suggesting change in chemical structure of bonds between the films and the substrates.

  2. Interfacial development of electrophoretically deposited graphene oxide films on Al alloys

    DOE PAGES

    Jin, Sumin; Dickerson, James H.; Pham, Viet Hung; Brochu, Mathieu

    2015-07-28

    Adhesion between film and substrate is critical for electronic device and coating applications. Interfacial development between electrophoretically deposited graphene oxide films on Al 1100 and Al 5052 alloys were investigated using FT-IR and XPS depth profiling techniques. Obtained results suggest metal ion permeation from the substrates into deposited graphene oxide films. The interface between the films and the substrates were primarily composed of Al-O-C bonds from oxygenated defects on graphene oxide plane rather than expected Al-C formation. Films heat treated at 150 °C had change in microstructure and peak shifts in XPS spectra suggesting change in chemical structure of bondsmore » between the films and the substrates.« less

  3. A comparison of film and phosphor scanners

    SciTech Connect

    Chancellor, T.; Morris, R.A.

    1993-10-01

    Signal-to-noise ratios (SNRs) and spatial distortions have been measured for three types of scanners: the Molecular Dynamics (MD) and DuPont film scanners and the MD phosphor scanner. The MD film scanner is a deployable and compact scanner that gives a peak SNR of 110 for low (< 2.0) optical densities (ODs), but the spatial distortions across the digitized film plane are significant. The authors compare this with the DuPont film scanner, which has equally good SNRs at low ODs, but very low spatial distortions. The DuPont also allows the user to define an OD range and contains a prescan function to find the suitable range if the user cannot input such a value; its scan times are quick, and the hardware allows for internal data averaging before being stored to disk. The MD phosphor imager has excellent low-dose capability, producing usable images at a 10-{mu}rad dose (from a 150-pkeV source) but its SNRs are low compared to the film scanner, but they can be increased by adjusting the photomultiplier tube voltage and laser radius across the scan arc.

  4. The photosensitivity of carbon quantum dots/CuAlO2 films composites.

    PubMed

    Pan, Jiaqi; Sheng, Yingzhuo; Zhang, Jingxiang; Wei, Jumeng; Huang, Peng; Zhang, Xin; Feng, Boxue

    2015-07-31

    Carbon quantum dots/CuAlO2 films were prepared by a simple route through which CuAlO2 films prepared by sol-gel on crystal quartz substrates were composited with carbon quantum dots on their surface. The characterization results indicated that CuAlO2 films were well combined with carbon quantum dots. The photoconductivity of carbon quantum dots/CuAlO2 films was investigated under illumination and darkness switching, and was demonstrated to be significantly enhanced compared with CuAlO2 films. Through analysis, this enhancement of photoconductivity was attributed to the carbon quantum dots with unique up-converted photoluminescence behavior. PMID:26150398

  5. Structure and properties of TiAlLaN films deposited at various bias voltages

    NASA Astrophysics Data System (ADS)

    Du, Hao; Xiong, Ji; Zhao, Haibo; Wu, Yuemei; Wan, Weicai; Wang, Linlin

    2014-02-01

    The TiAlLaN films were deposited on YG8 and silicon (1 1 1) substrates by a hybrid PVD coater which is combined with medium frequency reactive magnetron sputtering and ion-plating evaporation. The effects of lanthanum addition and bias voltages on the composition, crystal morphology, microstructure, mechanical properties, and oxidation resistance of the TiAlLaN films were investigated systematically. With lanthanum addition in the TiAlN film, the crystal morphology changed from columnar to equiaxial, and the grain refinement accompanied by the increase of hardness and elastic modulus was found. The indentation adhesion test showed that the adhesion strength was deteriorated by adding lanthanum in the deposited film; however, the scratch adhesion test expressed a better morphology of the scratch track line for the TiAlLaN film. With the substrate bias increasing, the elements concentration of films were alternated, and the equiaxial crystals were turned to columnar crystals. The oxidation resistance of the deposited films increased with the increase of bias voltage. The adhesion qualities, which are affected by the increasing hardness and elastic modulus, were worse for the TiAlLaN films under higher bias voltages. The TiAlLaN film under the bias of -10 V showed the highest H/E ratio.

  6. Effect of Al Doping Concentration on Microstructure, Photoelectric Properties and Doped Mechanism of Azo Films

    NASA Astrophysics Data System (ADS)

    Xu, Ying; Cai, Yanqing; Hou, Linyan; Ma, Penghua

    2014-05-01

    Al doped ZnO (AZO) thin films were deposited on a glass substrate by atmospheric pressure chemical vapor deposition (APCVD) method. Effect of Al doping concentration on microstructure, photoelectric properties and doped mechanism of AZO thin films were investigated. The analysis results revealed that the structural properties of the films possessed crystalline structure with a preferred (002) orientation. The best crystallization quality and minimum electrical resistivity was obtained at 5 at.% Al doped films and the minimum resistivity was 6.6 × 10-4 Ω ṡ cm. Uniform granular grains were observed on the surface of AZO films, and the average optical transmittance was above 80% in the visible range. The doped mechanism of AZO films was analyzed as follows. With Al doping in ZnO films, AlZn substitute and Ali interstice were produced, which decreased the resistivity of films. While after the limit value and with the continuing increase of Al doping concentration, free electrons were consumed and the resistivity of films increased.

  7. Emission properties of an amorphous AlN:Cr3+ thin-film phosphor

    NASA Astrophysics Data System (ADS)

    Caldwell, M. L.; Martin, A. L.; Dimitrova, V. I.; Van Patten, P. G.; Kordesch, M. E.; Richardson, H. H.

    2001-02-01

    Chromium-doped aluminum nitride (AlN:Cr) films were grown on p-doped silicon (111) by rf magnetron sputtering in a nitrogen atmosphere at a pressure of 10-4 Torr. Film thickness was typically 200 nm. After growth, the films were "activated" at ˜1300 K for 30 min in a nitrogen atmosphere. Films activated in this manner exhibit intense cathodoluminescence and photoluminescence emission. Spectral evidence demonstrates conclusively that the luminescent centers are Cr3+ ions.

  8. Improved performances of AlN/polyimide hybrid film and its application in redistribution layer

    NASA Astrophysics Data System (ADS)

    Liu, Zhe; Ding, Guifu; Luo, Jiangbo; Lu, Wen; Zhao, Xiaolin; Cheng, Ping; Wang, Yanlei

    2016-08-01

    The AlN/polyimide (PI) hybrid film was studied as the dielectric layer in the redistribution layer (RDL) in this work. The incorporation of the AlN into the PI matrix was achieved by mechanical ball-milling process. The spin-coating process was used to fabricate the AlN/PI hybrid film, which is compatible with micro-electro-mechanical system (MEMS) technology for fabricating RDL. The AlN/PI hybrid film was characterized by Fourier transform infrared (FTIR) spectrum and thermogravimetric analysis (TGA). The effect of the AlN content on the thermal stability, thermal expansion coefficient, hardness and water adsorption of the AlN/PI hybrid film was studied. The results indicated that the addition of AlN nanoparticles improved the thermal stability and hardness, but decreased the thermal expansion coefficient and water absorption of the pure PI film. As an example of its typical application, the AlN/PI hybrid film with 8 wt.% AlN was patterned using micromachining technology and used as the dielectric layer in RDL successfully. [Figure not available: see fulltext.

  9. Improved performances of AlN/polyimide hybrid film and its application in redistribution layer

    NASA Astrophysics Data System (ADS)

    Liu, Zhe; Ding, Guifu; Luo, Jiangbo; Lu, Wen; Zhao, Xiaolin; Cheng, Ping; Wang, Yanlei

    2016-09-01

    The AlN/polyimide (PI) hybrid film was studied as the dielectric layer in the redistribution layer (RDL) in this work. The incorporation of the AlN into the PI matrix was achieved by mechanical ball-milling process. The spin-coating process was used to fabricate the AlN/PI hybrid film, which is compatible with micro-electro-mechanical system (MEMS) technology for fabricating RDL. The AlN/PI hybrid film was characterized by Fourier transform infrared (FTIR) spectrum and thermogravimetric analysis (TGA). The effect of the AlN content on the thermal stability, thermal expansion coefficient, hardness and water adsorption of the AlN/PI hybrid film was studied. The results indicated that the addition of AlN nanoparticles improved the thermal stability and hardness, but decreased the thermal expansion coefficient and water absorption of the pure PI film. As an example of its typical application, the AlN/PI hybrid film with 8 wt.% AlN was patterned using micromachining technology and used as the dielectric layer in RDL successfully.

  10. Electrical and optical properties of in and Al doped ZnO thin film

    NASA Astrophysics Data System (ADS)

    Park, Sang-Uk; Koh, Jung-Hyuk

    2013-07-01

    In this study, to improve the electrical and optical properties of aluminium (Al) doped zinc oxide thin films, we have added small amounts of indium (In) to Al doped ZnO thin films. We will present the results of In and Al doped ZnO thin film on glass substrates prepared by the sol-gel processing method. A rapid thermal annealing process was applied to cure the thin film properties. Different amounts of In were used to dope the AZO thin films to find the optimum process condition. The effects of crystallinity were analyzed by an x-ray diffraction method. In addition, the optical transmittance and electrical proprties of In doped AZO thin films were investigated.

  11. Electrical characterization of Si doped AlN films synthesized by pulsed laser deposition

    NASA Astrophysics Data System (ADS)

    Simeonov, Simeon; Bakalova, Silvia; Szekeres, Anna; Minkov, Ivaylo; Socol, Gabriel; Ristoscu, Carmen; Mihailescu, Ion

    2015-04-01

    The electrical properties of thin AlN films doped with Si (AlN:Si) have been investigated. The films were synthesized on Si substrates at 800 °C by pulsed laser deposition in low-pressure nitrogen ambient. The AlN:Si films exhibit non-ohmic I-V characteristics and the current through these films is controlled by space charge limited current. The C-V dependence of metal-insulator-silicon (MIS) structures with AlN:Si films exhibits an excess capacitance around zero bias voltage. This excess capacitance indicates the presence of deep acceptor levels situated at the boundaries of adjacent grains in the AlN:Si films. The Si donor density in the AlN:Si films, estimated from the 1 MHz C-V characteristics, is of the order of 1018 cm-3. The impedance measurements of these AlN:Si structures at different test voltage frequencies reveal that the charge transport mechanism is dominated by either thermally-activated hopping or electron tunneling from occupied to nearest unoccupied deep levels.

  12. Atomic layer controlled deposition of Al 2O 3 films using binary reaction sequence chemistry

    NASA Astrophysics Data System (ADS)

    Ott, A. W.; McCarley, K. C.; Klaus, J. W.; Way, J. D.; George, S. M.

    1996-11-01

    Al 2O 3 films with precise thicknesses and high conformality were deposited using sequential surface chemical reactions. To achieve this controlled deposition, a binary reaction for Al 2O 3 chemical vapor deposition (2Al(CH 3) 3 + 3H 2O → Al 2O 3 + 6CH 4) was separated into two half-reactions: (A) AlOH ∗ + Al(CH 3) 3 → AlOAl(CH 3) 2∗ + CH 4, (B) AlCH 3∗ + H 2O → AlOH ∗ + CH 4, where the asterisks designate the surface species. Trimethylaluminum (Al(CH 3) 3) (TMA) and H 2O reactants were employed alternately in an ABAB … binary reaction sequence to deposit Al 2O 3 films on single-crystal Si(100) and porous alumina membranes with pore diameters of ˜ 220 Å. Ellipsometric measurements obtained a growth rate of 1.1 Å/AB cycle on the Si(100) substrate at the optimal reaction conditions. The Al 2O 3 films had an index of refraction of n = 1.65 that is consistent with a film density of ϱ = 3.50 g/cm 3. Atomic force microscope images revealed that the Al 2O 3 films were exceptionally flat with a surface roughness of only ±3 Å ( rms) after the deposition of ˜ 270 Å using 250 AB reaction cycles. Al 2O 3 films were also deposited inside the pores of Anodisc alumina membranes. Gas flux measurements for H 2 and N 2 were consistent with a progressive pore reduction versus number of AB reaction cycles. Porosimetry measurements also showed that the original pore diameter of ˜ 220 Å was reduced to ˜ 130 Å after 120 AB reaction cycles.

  13. Thermally Diffused Al:ZnO Thin Films for Broadband Transparent Conductor.

    PubMed

    Tong, Chong; Yun, Juhyung; Chen, Yen-Jen; Ji, Dengxin; Gan, Qiaoqiang; Anderson, Wayne A

    2016-02-17

    Here, we report an approach to realize highly transparent low resistance Al-doped ZnO (AZO) films for broadband transparent conductors. Thin Al films are deposited on ZnO surfaces, followed by thermal diffusion processes, introducing the Al doping into ZnO thin films. By utilizing the interdiffusion of Al, Zn, and O, the chemical state of Al on the surfaces can be converted to a fully oxidized state, resulting in a low sheet resistance of 6.2 Ω/sq and an excellent transparency (i.e., 96.5% at 550 nm and higher than 85% up to 2500 nm), which is superior compared with some previously reported values for indium tin oxide, solution processed AZO, and many transparent conducting materials using novel nanostructures. Such AZO films are also applied as transparent conducting layers for AZO/Si heterojunction solar cells, demonstrating their applications in optoelectronic devices. PMID:26807664

  14. Influence of Al/CuO reactive multilayer films additives on exploding foil initiator

    SciTech Connect

    Zhou Xiang; Shen Ruiqi; Ye Yinghua; Zhu Peng; Hu Yan; Wu Lizhi

    2011-11-01

    An investigation on the influence of Al/CuO reactive multilayer films (RMFs) additives on exploding foil initiator was performed in this paper. Cu film and Cu/Al/CuO RMFs were produced by using standard microsystem technology and RF magnetron sputtering technology, respectively. Scanning electron microscopy characterization revealed the distinct layer structure of the as-deposited Al/CuO RMFs. Differential scanning calorimetry was employed to ascertain the amount of heat released in the thermite reaction between Al films and CuO films, which was found to be 2024 J/g. Electrical explosion tests showed that 600 V was the most matching voltage for our set of apparatus. The explosion process of two types of films was observed by high speed camera and revealed that compared with Cu film, an extra distinct combustion phenomenon was detected with large numbers of product particles fiercely ejected to a distance of about six millimeters for Cu/Al/CuO RMFs. By using the atomic emission spectroscopy double line technique, the reaction temperature was determined to be about 6000-7000 K and 8000-9000 K for Cu film and Cu/Al/CuO RMFs, respectively. The piezoelectricity of polyvinylidene fluoride film was employed to measure the average velocity of the slapper accelerated by the explosion of the films. The average velocities of the slappers were calculated to be 381 m/s and 326 m/s for Cu film and Cu/Al/CuO RMFs, respectively, and some probable reasons were discussed with a few suggestions put forward for further work.

  15. Deposition and Characterization of Al:ZnO Thin Films for Optoelectronic Applications

    NASA Astrophysics Data System (ADS)

    Pandey, R. K.; Mishra, Swati; Bajpai, P. K.

    2016-07-01

    Transparent aluminum-doped zinc oxide (Al:ZnO) thin films have been successfully synthesized on silicon substrates at room temperature using a sol-gel spin-coating method. The structural and optical properties and surface morphology of the synthesized films were characterized using x-ray diffraction (XRD) analysis, ultraviolet-visible (UV-Vis) spectroscopy, Fourier-transform infrared (FTIR) spectroscopy, micro-Raman spectroscopy, and atomic force microscopy (AFM). The prepared Al:ZnO retained the hexagonal wurtzite structure of ZnO. FTIR and Raman spectra clearly revealed a major peak at 437 cm-1, associated with the ZnO bond. UV-Vis spectra showed that the Al:ZnO films were transparent from the near-ultraviolet to near-infrared region. The effect of film thickness on the physical and optical properties of the Al:ZnO thin films for 2.0 at.% aluminum concentration was investigated. Measurements revealed that the film transparency, optical energy bandgap, Urbach energy, extinction coefficient, and porosity varied with the film thickness. The energy bandgap values for the prepared thin films increased in the range of 3.18 eV to 3.2 eV with increasing film thickness.

  16. Deposition and Characterization of Al:ZnO Thin Films for Optoelectronic Applications

    NASA Astrophysics Data System (ADS)

    Pandey, R. K.; Mishra, Swati; Bajpai, P. K.

    2016-11-01

    Transparent aluminum-doped zinc oxide (Al:ZnO) thin films have been successfully synthesized on silicon substrates at room temperature using a sol-gel spin-coating method. The structural and optical properties and surface morphology of the synthesized films were characterized using x-ray diffraction (XRD) analysis, ultraviolet-visible (UV-Vis) spectroscopy, Fourier-transform infrared (FTIR) spectroscopy, micro-Raman spectroscopy, and atomic force microscopy (AFM). The prepared Al:ZnO retained the hexagonal wurtzite structure of ZnO. FTIR and Raman spectra clearly revealed a major peak at 437 cm-1, associated with the ZnO bond. UV-Vis spectra showed that the Al:ZnO films were transparent from the near-ultraviolet to near-infrared region. The effect of film thickness on the physical and optical properties of the Al:ZnO thin films for 2.0 at.% aluminum concentration was investigated. Measurements revealed that the film transparency, optical energy bandgap, Urbach energy, extinction coefficient, and porosity varied with the film thickness. The energy bandgap values for the prepared thin films increased in the range of 3.18 eV to 3.2 eV with increasing film thickness.

  17. Simultaneous enhancement of carrier mobility and concentration via tailoring of Al-chemical states in Al-ZnO thin films

    SciTech Connect

    Kumar, Manish Wen, Long; Sahu, Bibhuti B.; Han, Jeon Geon

    2015-06-15

    Simultaneously achieving higher carriers concentration and mobility is a technical challenge against up-scaling the transparent-conductive performances of transparent-conductive oxides. Utilizing one order higher dense (∼1 × 10{sup 11} cm{sup −3}) plasmas (in comparison to the conventional direct current plasmas), highly c-axis oriented Al-doped ZnO films have been prepared with precise control over relative composition and chemical states of constituting elements. Tailoring of intrinsic (O vacancies) and extrinsic (ionic Al and zero-valent Al) dopants provide simultaneous enhancement in mobility and concentration of charge carriers. Room-temperature resistivity as low as 4.89 × 10{sup −4} Ω cm along the carrier concentration 5.6 × 10{sup 20} cm{sup −3} is obtained in 200 nm thick transparent films. Here, the control of atomic Al reduces the charge trapping at grain boundaries and subdues the effects of grain boundary scattering. A mechanism based on the correlation between electron-hole interaction and carrier mobility is proposed for degenerately doped wide band-gap semiconductors.

  18. Characterization and study of antibacterial activity of spray pyrolysed ZnO:Al thin films

    NASA Astrophysics Data System (ADS)

    Manoharan, C.; Pavithra, G.; Bououdina, M.; Dhanapandian, S.; Dhamodharan, P.

    2016-08-01

    Aluminum-doped zinc oxide (ZnO:Al) thin films were deposited onto glass substrates using spray pyrolysis technique with the substrate temperature of 400 °C. X-ray diffraction analysis indicated that the films were polycrystalline with hexagonal wurtzite structure preferentially oriented along (002) direction. Surface morphology of the films obtained by scanning electron microscopy showed that the grains were of nanoscale size with porous nature for 6 at.% of Al. Atomic force microscopy observations revealed that the particles size and surface roughness of the films decreased with Al-doping. Optical measurements indicated that ZnO:Al (6 at.%) exhibited a band gap of 3.11 eV, which is lower than that of pure ZnO film, i.e. 3.42 eV. Photoluminescence analysis showed weak NBE emission at 396 nm for Al-doped films. The low resistivity, high hall mobility and carrier concentration values were obtained at a doping ratio of 6 at.% of Al. The effective incorporation of 6 at.% of Al into ZnO lattice by occupying Zn sites yielded a well-pronounced antibacterial activity against Staphylococcus aureus.

  19. Interfacial perpendicular magnetic anisotropy and damping parameter in ultra thin Co2FeAl films

    NASA Astrophysics Data System (ADS)

    Cui, Yishen; Khodadadi, Behrouz; Schäfer, Sebastian; Mewes, Tim; Lu, Jiwei; Wolf, Stuart A.

    2013-04-01

    B2-ordered Co2FeAl films were synthesized using an ion beam deposition tool. A high degree of chemical ordering ˜81.2% with a low damping parameter (α) less than 0.004 was obtained in a 50 nm thick film via rapid thermal annealing at 600 °C. The perpendicular magnetic anisotropy (PMA) was optimized in ultra thin Co2FeAl films annealed at 350 °C without an external magnetic field. The reduced thickness and annealing temperature to achieve PMA introduced extrinsic factors thus increasing α significantly. However, the observed damping of Co2FeAl films was still lower than that of Co60Fe20B20 films prepared at the same thickness and annealing temperature.

  20. Growth and oxidation of thin film Al{sub 2}Cu

    SciTech Connect

    Son, K.A.; Missert, N.A.; Barbour, J.C.; Hren, J.J.; Copeland, R.G.; Minor, K.G.

    1999-11-09

    Al{sub 2}Cu thin films ({approximately}382 nm) are fabricated by melting and resolidifying Al/Cu bilayers in the presence of a {approximately}3 nm Al{sub 2}O{sub 3} passivating layer. X-ray Photoelectron Spectroscopy (XPS) measures a 1.0 eV shift of the Cu2p{sub 3/2} peak and a 1.6 eV shift of the valence band relative to metallic Cu upon Al{sub 2}Cu formation. Scanning Electron Microscopy (SEM) and Electron Back-Scattered Diffraction (EBSD) show that the Al{sub 2}Cu film is composed of 30--70 {mu}m wide and 10--25 mm long cellular grains with (110) orientation. The atomic composition of the film as estimated by Energy Dispersive Spectroscopy (EDS) is 67{+-}2% Al and 33{+-}2% Cu. XPS scans of Al{sub 2}O{sub 3}/Al{sub 2}Cu taken before and after air exposure indicate that the upper Al{sub 2}Cu layers undergo further oxidation to Al{sub 2}O{sub 3} even in the presence of {approximately}5 nm Al{sub 2}O{sub 3}. The majority of Cu produced from oxidation is believed to migrate below the Al{sub 2}O{sub 3} layers, based upon the lack of evidence for metallic Cu in the XPS scans. In contrast to Al/Cu passivated with Al{sub 2}O{sub 3}, melting/resolidifying the Al/Cu bilayer without Al{sub 2}O{sub 3} results in phase-segregated dendritic film growth.

  1. Al doped ZnO thin films - microstructure, physical and sensor properties

    NASA Astrophysics Data System (ADS)

    Starbov, N.; Balabanov, S.; Bineva, I.; Rachkova, A.; Krumov, E.; Starbova, K.

    2012-12-01

    Thin ZnO films doped with Al are deposited by spray pyrolysis onto glass substrates using starting solution of Zn-acetate + n.AlCl (where 0.1 < n < 30 at.%). The ZnO phase composition and surface morphology are revealed via X-ray diffraction or atomic force and scanning electron microscopy respectively. UV/VIS transmittance/reflectance, as well as DC-conductivity measurements are applied in order to reveal the influence of the Al doping on the optical and electrical transport properties of the films studied. The sensing efficiency of the pure as well as of doped ZnO films for detection of noxious gases is checked via resistivity measurements under saturated vapours of ethanol, acetone, ammonia, dimethylamine and formalin at room temperature. Finally the results obtained are discussed concerning the application of the ZnO:Al films studied in the field of sensor technique.

  2. Pulsed laser deposition of AlMgB14 thin films

    SciTech Connect

    Britson, Jason Curtis

    2008-11-18

    Hard, wear-resistant coatings of thin film borides based on AlMgB14 have the potential to be applied industrially to improve the tool life of cutting tools and pump vanes and may account for several million dollars in savings as a result of reduced wear on these parts. Past work with this material has shown that it can have a hardness of up to 45GPa and be fabricated into thin films with a similar hardness using pulsed laser deposition. These films have already been shown to be promising for industrial applications. Cutting tools coated with AlMgB14 used to mill titanium alloys have been shown to substantially reduce the wear on the cutting tool and extend its cutting life. However, little research into the thin film fabrication process using pulsed laser deposition to make AlMgB14 has been conducted. In this work, research was conducted into methods to optimize the deposition parameters for the AlMgB14 films. Processing methods to eliminate large particles on the surface of the AlMgB14 films, produce films that were at least 1m thick, reduce the surface roughness of the films, and improve the adhesion of the thin films were investigated. Use of a femtosecond laser source rather than a nanosecond laser source was found to be effective in eliminating large particles considered detrimental to wear reduction properties from the films. Films produced with the femtosecond laser were also found to be deposited at a rate 100 times faster than those produced with the nanosecond laser. However, films produced with the femtosecond laser developed a relatively high RMS surface roughness around 55nm. Attempts to decrease the surface roughness were largely unsuccessful. Neither increasing the surface temperature of the substrate during deposition nor using a double pulse to ablate the material was found to be extremely successful to reduce the surface roughness. Finally, the adhesion of the thin films to M2 tool steel

  3. Thermal conductivity and mechanical properties of AlN-based thin films

    NASA Astrophysics Data System (ADS)

    Moraes, V.; Riedl, H.; Rachbauer, R.; Kolozsvári, S.; Ikeda, M.; Prochaska, L.; Paschen, S.; Mayrhofer, P. H.

    2016-06-01

    While many research activities concentrate on mechanical properties and thermal stabilities of protective thin films, only little is known about their thermal properties being essential for the thermal management in various industrial applications. Based on the 3ω-method, we show the influence of Al and Cr on the temperature dependent thermal conductivity of single-phase cubic structured TiN and single-phase wurtzite structured AlN thin films, respectively, and compare them with the results obtained for CrN thin films. The dc sputtered AlN thin films revealed a highly c-axis oriented growth for deposition temperatures of 250 to 700 °C. Their thermal conductivity was found to increase strongly with the film thickness, indicating progressing crystallization of the interface near amorphous regions during the sputtering process. For the 940 nm AlN film, we found a lower boundary for the thermal conductivity of 55.3 W m-1 K-1 . By the substitution of only 10 at. % Al with Cr, κ significantly reduces to ˜5.0 W m-1 K-1 , although the single-phase wurtzite structure is maintained. The single-phase face centered cubic TiN and Ti0.36Al0.64N thin films exhibit κ values of 3.1 W m-1 K-1 and 2.5 W m-1 K-1 , respectively, at room temperature. Hence, also here, the substitutional alloying reduces the thermal conductivity, although at a significantly lower level. Single-phase face centered cubic CrN thin films show κ values of 3.6 W m-1 K-1 . For all nitride based thin films investigated, the thermal conductivity slightly increases with increasing temperature between 200 and 330 K. This rather unusual behavior is based on the high defect density (especially point defects) within the thin films prepared by physical vapor deposition.

  4. Microstructure evolution of Al-Mg-B thin films by thermal annealing

    NASA Astrophysics Data System (ADS)

    Tian, Y.; Constant, A.; Lo, C. C. H.; Anderegg, J. W.; Russell, A. M.; Snyder, J. E.; Molian, P.

    2003-07-01

    The growth of Al-Mg-B thin films on SiO2/Si(100) substrates was performed by nanosecond pulsed laser deposition at three different substrate temperatures (300 K, 573 K, and 873 K). The as-deposited films were then annealed at 1173 K or 1273 K for 2 h. X-ray photoelectron spectroscopy, x-ray diffraction (XRD), and atomic force microscope were employed to investigate the effects of processing conditions on the composition, microstructure evolution, and surface morphology of the Al-Mg-B films. The substrate temperatures were found to affect the composition of as-deposited films in that the Mg content decreases and C content increases at higher substrate temperatures, in particular for the 873 K-deposited film. XRD results show that the as-deposited films were amorphous, and this structure may be stable up to 1173 K. Annealing at 1273 K was found to fully crystallize the room temperature and 573 K-deposited Al-Mg-B films with the formation of the polycrystalline orthorhombic AlMgB14 phase, accompanied by the development of a pronounced (011) preferred orientation. Nevertheless, high C incorporation in the 873 K-deposited Al-Mg-B film inhibits the crystallization and the amorphous structure remains stable even during 1273 K annealing. The presence of Si in the room-temperature-deposited 1273 K-annealed film due to the interdiffusion between the substrate and film leads to the formation of an additional tetragonal α-FeSi2 phase, which is thought to cause the surface cracking and microstructural instability observed in this film.

  5. Fabrication of Al-Doped ZnO Film with High Conductivity Induced by Photocatalytic Activity

    NASA Astrophysics Data System (ADS)

    Hong, Jeongsoo; Katsumata, Ken-ichi; Matsushita, Nobuhiro

    2016-06-01

    We have fabricated Al-doped ZnO films by a spin-spray method, achieving high conductivity by Al-ion doping and photocatalytic activity of the ZnO. The surface morphology of the as-deposited films was varied by changing the Al concentration and addition of citrate ions. As-deposited Al-doped ZnO film without citrate ions showed rod array structure with increasing rod width as the Al concentration was increased. Meanwhile, Al-doped ZnO film deposited with addition of citrate ions changed to exhibit dense and continuous surface morphology with high transmittance of 85%. The lowest resistivity recorded for undoped and Al-doped ZnO film was 2.1 × 10-2 Ω cm and 5.9 × 10-3 Ω cm, after ultraviolet (UV) irradiation. The reason for the decreased resistivity is thought to be that Al-ion doping and the photocatalytic activity of ZnO contributed to improve the conductivity.

  6. Fabrication of Al-Doped ZnO Film with High Conductivity Induced by Photocatalytic Activity

    NASA Astrophysics Data System (ADS)

    Hong, Jeongsoo; Katsumata, Ken-ichi; Matsushita, Nobuhiro

    2016-10-01

    We have fabricated Al-doped ZnO films by a spin-spray method, achieving high conductivity by Al-ion doping and photocatalytic activity of the ZnO. The surface morphology of the as-deposited films was varied by changing the Al concentration and addition of citrate ions. As-deposited Al-doped ZnO film without citrate ions showed rod array structure with increasing rod width as the Al concentration was increased. Meanwhile, Al-doped ZnO film deposited with addition of citrate ions changed to exhibit dense and continuous surface morphology with high transmittance of 85%. The lowest resistivity recorded for undoped and Al-doped ZnO film was 2.1 × 10-2 Ω cm and 5.9 × 10-3 Ω cm, after ultraviolet (UV) irradiation. The reason for the decreased resistivity is thought to be that Al-ion doping and the photocatalytic activity of ZnO contributed to improve the conductivity.

  7. Properties of Cu(In,Ga,Al)Se{sub 2} thin films fabricated by magnetron sputtering

    SciTech Connect

    Hameed, Talaat A.; Cao, Wei; Mansour, Bahiga A.; Elzawaway, Inas K.; Abdelrazek, El-Metwally M.; Elsayed-Ali, Hani E.

    2015-05-15

    Cu(In,Ga,Al)Se{sub 2} (CIGAS) thin films were studied as an alternative absorber layer material to Cu(In{sub x}Ga{sub 1−x})Se{sub 2}. CIGAS thin films with varying Al content were prepared by magnetron sputtering on Si(100) and soda-lime glass substrates at 350 °C, followed by postdeposition annealing at 520 °C for 5 h in vacuum. The film composition was measured by an electron probe microanalyzer while the elemental depth profiles were determined by secondary ion mass spectrometry. X-ray diffraction studies indicated that CIGAS films are single phase with chalcopyrite structure and that the (112) peak clearly shifts to higher 2θ values with increasing Al content. Scanning electron microscopy images revealed dense and well-defined grains, as well as sharp CIGAS/Si(100) interfaces for all films. Atomic force microscopy analysis indicated that the roughness of CIGAS films decreases with increasing Al content. The bandgap of CIGAS films was determined from the optical transmittance and reflectance spectra and was found to increase as Al content increased.

  8. Direct coating adherent diamond films on Fe-based alloy substrate: the roles of Al, Cr in enhancing interfacial adhesion and promoting diamond growth.

    PubMed

    Li, X J; He, L L; Li, Y S; Yang, Q; Hirose, A

    2013-08-14

    Direct CVD deposition of dense, continuous, and adherent diamond films on conventional Fe-based alloys has long been considered impossible. The current study demonstrates that such a deposition can be realized on Al, Cr-modified Fe-based alloy substrate (FeAl or FeCrAl). To clarify the fundamental mechanism of Al, Cr in promoting diamond growth and enhancing interfacial adhesion, fine structure and chemical analysis around the diamond film-substrate interface have been comprehensively characterized by transmission electron microscopy. An intermediate graphite layer forms on those Al-free substrates such as pure Fe and FeCr, which significantly deteriorates the interfacial adhesion of diamond. In contrast, such a graphite layer is absent on the FeAl and FeCrAl substrates, whereas a very thin Al-rich amorphous oxide sublayer is always identified between the diamond film and substrate interface. These comparative results indicate that the Al-rich interfacial oxide layer acts as an effective barrier to prevent the formation of graphite phase and consequently enhance diamond growth and adhesion. The adhesion of diamond film formed on FeCrAl is especially superior to that formed on FeAl substrate. This can be further attributed to a synergetic effect including the reduced fraction of Al and the decreased substrate thermal-expansion coefficient on FeCrAl in comparison with FeAl, and a mechanical interlocking effect due to the formation of interfacial chromium carbides. Accordingly, a mechanism model is proposed to account for the different interfacial adhesion of diamond grown on the various Fe-based substrates.

  9. Defect assisted saturable absorption characteristics in Al and Li doped ZnO thin films

    NASA Astrophysics Data System (ADS)

    K. M., Sandeep; Bhat, Shreesha; S. M., Dharmaprakash; P. S., Patil; Byrappa, K.

    2016-09-01

    The influence of different doping ratios of Al and Li on the nonlinear optical properties, namely, a two-photon absorption and a nonlinear refraction using single beam Z-scan technique, of nano-crystalline ZnO thin films has been investigated in the present study. A sol-gel spin-coated pure ZnO, Al-doped ZnO (AZO), and Li-doped ZnO (LZO) thin films have been prepared. The stoichiometric deviations induced by the occupancy of Al3+ and Li+ ions at the interstitial sites injects the compressive stress in the AZO and LZO thin films, respectively, while the extended defect states below the conduction band leads to a redshift of energy band gap in the corresponding films as compared to pure ZnO thin film. Switching from an induced absorption in ZnO and 1 at. wt. % doped AZO and LZO films to a saturable absorption (SA) in 2 at. wt. % doped AZO and LZO films has been observed, and it is attributed to the saturation of a linear absorption of the defect states. The closed aperture Z-scan technique revealed the self-focusing (a positive nonlinear refractive index) in all the films, which emerge out of the thermo-optical effects due to the continuous illumination of laser pulses. A higher third-order nonlinear optical susceptibility χ(3) of the order 10-3 esu has been observed in all the films.

  10. Synthesis of c-axis oriented AlN thin films on different substrates: A review

    SciTech Connect

    Iriarte, G.F.

    2010-09-15

    Highly c-axis oriented AlN thin films have been deposited by reactive sputtering on different substrates. The crystallographic properties of layered film structures consisting of a piezoelectric layer, aluminum nitride (AlN), synthesized on a variety of substrates, have been examined. Aluminum nitride thin films have been deposited by reactive pulsed-DC magnetron sputtering using an aluminum target in an Ar/N{sub 2} gas mixture. The influence of the most critical deposition parameters on the AlN thin film crystallography has been investigated by means of X-ray diffraction (XRD) analysis of the rocking curve Full-Width at Half Maximum (FWHM) of the AlN-(0 0 0 2) peak. The relationship between the substrate, the synthesis parameters and the crystallographic orientation of the AlN thin films is discussed. A guide is provided showing how to optimize these conditions to obtain highly c-axis oriented AlN thin films on substrates of different nature.

  11. Sputter-Deposited AlTiO Thin Films for Semi-Transparent Silicon Thin Film Solar Cells

    NASA Astrophysics Data System (ADS)

    Lee, Seung-Yun; Bang, Ki Su; Lim, Jung Wook

    2014-09-01

    This paper reports on sputter-deposited AlTiO (ATO) thin films and their effects on the performance of semi-transparent silicon thin film solar cells. The electrical resistivity and the transparency of the ATO films depend significantly on the flow ratio of oxygen to argon during the reactive sputtering process. With highly transparent ATO films, transmittances of over 80% were obtained by increasing this flow ratio. When the ATO films were used on silicon substrates, they exhibited an anti-reflection property, where the minimum reflectance at visible light wavelength was decreased to 1.2%. The introduction of ATO thin film layers into solar cells resulted in a 24% increase in transmittance at wavelengths of around 700 nm, due to the film's anti-reflection characteristic. In addition, the color of the cells changed from green to bright red as the ATO layers were adopted. These beneficial effects of the sputter-deposited ATO films suggest an effective pathway towards the semi-transparent silicon thin film solar cells for building-integrated photovoltaic system applications.

  12. AlScN thin film based surface acoustic wave devices with enhanced microfluidic performance

    NASA Astrophysics Data System (ADS)

    Wang, W. B.; Fu, Y. Q.; Chen, J. J.; Xuan, W. P.; Chen, J. K.; Wang, X. Z.; Mayrhofer, P.; Duan, P. F.; Bittner, A.; Schmid, U.; Luo, J. K.

    2016-07-01

    This paper reports the characterization of scandium aluminum nitride (Al1-x Sc x N, x  =  27%) films and discusses surface acoustic wave (SAW) devices based on them. Both AlScN and AlN films were deposited on silicon by sputtering and possessed columnar microstructures with (0 0 0 2) crystal orientation. The AlScN/Si SAW devices showed improved electromechanical coupling coefficients (K 2, ~2%) compared with pure AlN films (<0.5%). The performance of the two types of devices was also investigated and compared, using acoustofluidics as an example. The AlScN/Si SAW devices achieved much lower threshold powers for the acoustic streaming and pumping of liquid droplets, and the acoustic streaming and pumping velocities were 2  ×  and 3  ×  those of the AlN/Si SAW devices, respectively. Mechanical characterization showed that the Young’s modulus and hardness of the AlN film decreased significantly when Sc was doped, and this was responsible for the decreased acoustic velocity and resonant frequency, and the increased temperature coefficient of frequency, of the AlScN SAW devices.

  13. AlScN thin film based surface acoustic wave devices with enhanced microfluidic performance

    NASA Astrophysics Data System (ADS)

    Wang, W. B.; Fu, Y. Q.; Chen, J. J.; Xuan, W. P.; Chen, J. K.; Wang, X. Z.; Mayrhofer, P.; Duan, P. F.; Bittner, A.; Schmid, U.; Luo, J. K.

    2016-07-01

    This paper reports the characterization of scandium aluminum nitride (Al1‑x Sc x N, x  =  27%) films and discusses surface acoustic wave (SAW) devices based on them. Both AlScN and AlN films were deposited on silicon by sputtering and possessed columnar microstructures with (0 0 0 2) crystal orientation. The AlScN/Si SAW devices showed improved electromechanical coupling coefficients (K 2, ~2%) compared with pure AlN films (<0.5%). The performance of the two types of devices was also investigated and compared, using acoustofluidics as an example. The AlScN/Si SAW devices achieved much lower threshold powers for the acoustic streaming and pumping of liquid droplets, and the acoustic streaming and pumping velocities were 2  ×  and 3  ×  those of the AlN/Si SAW devices, respectively. Mechanical characterization showed that the Young’s modulus and hardness of the AlN film decreased significantly when Sc was doped, and this was responsible for the decreased acoustic velocity and resonant frequency, and the increased temperature coefficient of frequency, of the AlScN SAW devices.

  14. Property transformation of graphene with Al2O3 films deposited directly by atomic layer deposition

    NASA Astrophysics Data System (ADS)

    Zheng, Li; Cheng, Xinhong; Cao, Duo; Wang, Zhongjian; Xia, Chao; Yu, Yuehui; Shen, Dashen

    2014-01-01

    Al2O3 films are deposited directly onto graphene by H2O-based atomic layer deposition (ALD), and the films are pinhole-free and continuously cover the graphene surface. The growth process of Al2O3 films does not introduce any detective defects in graphene, suppresses the hysteresis effect and tunes the graphene doping to n-type. The self-cleaning of ALD growth process, together with the physically absorbed H2O and oxygen-deficient ALD environment consumes OH- bonds, suppresses the p-doping of graphene, shifts Dirac point to negative gate bias and enhances the electron mobility.

  15. A comparison between different ohmic contacts for ZnO thin films

    NASA Astrophysics Data System (ADS)

    Ikhmayies, Shadia J.; Abu El-Haija, Naseem M.; Ahmad-Bitar, Riyad N.

    2015-03-01

    There are several metals that form ohmic contacts for ZnO thin films, such as copper, aluminum and silver. The aim of this work is to make a comparison between these ohmic contacts. To achieve this purpose, polycrystalline ZnO thin films were prepared by the spray pyrolysis technique, and characterized by the I-V measurements at room temperature. Two strips of each metal were thermally evaporated on the surface of the film and measurements were first recorded in the dark and room light, then in the dark before and after annealing for Al, which was found to be the best in the set. Films with aluminum contacts gave the smallest resistivity, best ohmicity and they are slightly affected by light as required. On the other hand, copper was found to be the worst, and films with copper contacts gave the largest resistivity, worst ohmicity and they are the most affected by light. Annealing improved the aluminum contacts due to alloying and doping.

  16. Highly piezoelectric co-doped AlN thin films for wideband FBAR applications.

    PubMed

    Yokoyama, Tsuyoshi; Iwazaki, Yoshiki; Onda, Yosuke; Nishihara, Tokihiro; Sasajima, Yuichi; Ueda, Masanori

    2015-06-01

    We report piezoelectric materials composed of charge-compensated co-doped (Mg, β)(x)Al(1-x)N (β = Zr or Hf) thin films. The effect of the dopant element into AlN on the crystal structure, and piezoelectric properties of co-doped AlN was determined on the basis of a first-principles calculation, and the theoretical piezoelectric properties were confirmed by experimentally depositing thin films of magnesium (Mg) and zirconium (Zr) co-doped AlN (Mg-Zr-doped AlN). The Mg-Zrdoped AlN thin films were prepared on Si (100) substrates by using a triple-radio-frequency magnetron reactive co-sputtering system. The crystal structures and piezoelectric coefficients (d33) were investigated as a function of the concentrations, which were measured by X-ray diffraction and a piezometer. The results show that the d33 of Mg-Zr-doped AlN at total Mg and Zr concentrations (both expressed as β) of 0.35 was 280% larger than that of pure AlN. The experimentally measured parameter of the crystal structure and d33 of Mg-Zr-doped AlN (plotted as functions of total Mg and Zr concentrations) were in very close agreement with the corresponding values obtained by the first-principle calculations. Thin film bulk acoustic wave resonators (FBAR) employing (Mg,Zr)0.13Al0.87N and (Mg, Hf)0.13 Al0.87N as a piezoelectric thin film were fabricated, and their resonant characteristics were evaluated. The measured electromechanical coupling coefficient increased from 7.1% for pure AlN to 8.5% for Mg-Zr-doped AlN and 10.0% for Mg- Hf-doped AlN. These results indicate that co-doped (Mg, β)(x)Al(1-x)N (β = Zr or Hf) films have potential as piezoelectric thin films for wideband RF applications.

  17. Electrical characteristics of SrTiO3/Al2O3 laminated film capacitors

    NASA Astrophysics Data System (ADS)

    Peng, Yong; Yao, Manwen; Chen, Jianwen; Xu, Kaien; Yao, Xi

    2016-07-01

    The electrical characteristics of SrTiO3/Al2O3 (160 nm up/90 nm down) laminated film capacitors using the sol-gel process have been investigated. SrTiO3 is a promising and extensively studied high-K dielectric material, but its leakage current property is poor. SrTiO3/Al2O3 laminated films can effectively suppress the demerits of pure SrTiO3 films under low electric field, but the leakage current value reaches to 0.1 A/cm2 at higher electric field (>160 MV/m). In this study, a new approach was applied to reduce the leakage current and improve the dielectric strength of SrTiO3/Al2O3 laminated films. Compared to laminated films with Au top electrodes, dielectric strength of laminated films with Al top electrodes improves from 205 MV/m to 322 MV/m, simultaneously the leakage current maintains the same order of magnitude (10-4 A/cm2) until the breakdown occurs. The above electrical characteristics are attributed to the anodic oxidation reaction in origin, which can repair the defects of laminated films at higher electric field. The anodic oxidation reactions have been confirmed by the corresponding XPS measurement and the cross sectional HRTEM analysis. This work provides a new approach to fabricate dielectrics with high dielectric strength and low leakage current.

  18. Characterization of mixed Ti/Al oxide thin films prepared by ion-beam-induced CVD

    NASA Astrophysics Data System (ADS)

    Capitán, M. J.; Stabel, A.; Sánchez-López, J. C.; Justo, A.; González-Elipe, A. R.; Lefebvre, S.; Fernández, A.

    2000-07-01

    The ion-beam-induced chemical vapor deposition (IBICVD) method has been used for the preparation of TiO 2, Al 2O 3 and mixed oxide Al nTi mO x amorphous films on silica substrates. Also, a double-layer Al 2O 3/TiO 2 film has been prepared. The reflectivity (low angle X-ray diffraction) technique, together with transmission electron microscopy (TEM) and UV-Vis absorption spectroscopy, have been used to get information about thickness, roughness and electronic density of the films. It has been found that the films are homogeneous and flat being the Al 2O 3 layers less dense than the TiO 2 layers. In particular, Al nTi mO x films can be prepared with variable composition and refraction index. The values obtained for electronic density by X-ray reflectivity have been correlated with the compaction degree of the films as stated from TEM and UV-Vis absorption spectroscopy studies.

  19. Non-equilibrium Dynamics in Zeeman-Limited Superconducting Al Films

    NASA Astrophysics Data System (ADS)

    Prestigiacomo, J. C.; Adams, P. W.

    2016-05-01

    We report non-equilibrium dynamics in the tunneling density of states of ultra-thin Al films in high Zeeman fields. We have measured the transport and tunneling density of states of the films through the first-order Zeeman critical field transition. Films with sheet resistances of a few hundred ohms exhibit slow, non-exponential relaxation in the hysteretic critical field region. The relaxation traces are interspersed with abrupt avalanche-like collapses of the condensate on the superheating branch of the critical field hysteresis loop but not on the supercooling branch. We believe that film dynamics reflects an inhomogeneous order parameter that emerges in the critical field region.

  20. Enhanced self-repairing capability of sol-gel derived SrTiO3/nano Al2O3 composite films

    NASA Astrophysics Data System (ADS)

    Yao, Manwen; Peng, Yong; Xiao, Ruihua; Li, Qiuxia; Yao, Xi

    2016-08-01

    SrTiO3/nano Al2O3 inorganic nanocomposites were prepared by using a conventional sol-gel spin coating process. For comparison, SrTiO3 films doped by equivalent amount of sol-Al2O3 have also been investigated. Aluminum deposited by using vacuum evaporation was used as the top electrode. The nanocomposites exhibited a significantly enhanced dielectric strength of 506.9 MV/m, which was increased by 97.4% as compared with the SrTiO3 films doped with sol-Al2O3. The leakage current maintained of the same order of microampere until the ultimate breakdown of the nanocomposites. The excellent electrical performances are ascribed to the anodic oxidation reaction in origin, which can repair the internal and/or surface defects of the films.

  1. Circular test structure for the determination of piezoelectric constants of ScxAl1−xN thin films applying Laser Doppler Vibrometry and FEM simulations☆

    PubMed Central

    Mayrhofer, P.M.; Euchner, H.; Bittner, A.; Schmid, U.

    2015-01-01

    Piezoelectric scandium aluminium nitride (ScxAl1−xN) thin films offer a large potential for the application in micro electromechanical systems, as advantageous properties of pure AlN thin films are maintained, but combined with an increased piezoelectric actuation and sensing potential. ScxAl1−xN thin films with x = 27% have been prepared by DC reactive magnetron sputtering to find optimized deposition parameters to maximize the piezoelectric constants d33 and d31. For the accurate and simultaneous measurement of these constants Laser Doppler Vibrometry has been applied and compared to finite element (FEM) simulations. The electrode design has been optimized to rotational symmetric structures enabling a 180° phase shifted excitation, so that a straight-forward comparison of experimental displacement curves with those obtained from FEM is feasible. PMID:26109748

  2. CROSS-DISCIPLINARY PHYSICS AND RELATED AREAS OF SCIENCE AND TECHNOLOGY: Excellent Passivation of p-Type Si Surface by Sol-Gel Al2O3 Films

    NASA Astrophysics Data System (ADS)

    Xiao, Hai-Qing; Zhou, Chun-Lan; Cao, Xiao-Ning; Wang, Wen-Jing; Zhao, Lei; Li, Hai-Ling; Diao, Hong-Wei

    2009-08-01

    Al2O3 films with a thickness of about 100 nm synthesized by spin coating and thermally treated are applied for field-induced surface passivation of p-type crystalline silicon. The level of surface passivation is determined by techniques based on photoconductance. An effective surface recombination velocity below 100 cm/s is obtained on 10Ω ·cm p-type c-Si wafers (Cz Si). A high density of negative fixed charges in the order of 1012 cm-2 is detected in the Al2O3 films and its impact on the level of surface passivation is demonstrated experimentally. Furthermore, a comparison between the surface passivation achieved for thermal SiO2 and plasma enhanced chemical vapor deposition SiNx:H films on the same c-Si is presented. The high negative fixed charge density explains the excellent passivation of p-type c-Si by Al2O3.

  3. Mixed Al and Si doping in ferroelectric HfO{sub 2} thin films

    SciTech Connect

    Lomenzo, Patrick D.; Nishida, Toshikazu; Takmeel, Qanit; Zhou, Chuanzhen; Chung, Ching-Chang; Jones, Jacob L.; Moghaddam, Saeed

    2015-12-14

    Ferroelectric HfO{sub 2} thin films 10 nm thick are simultaneously doped with Al and Si. The arrangement of the Al and Si dopant layers within the HfO{sub 2} greatly influences the resulting ferroelectric properties of the polycrystalline thin films. Optimizing the order of the Si and Al dopant layers led to a remanent polarization of ∼20 μC/cm{sup 2} and a coercive field strength of ∼1.2 MV/cm. Post-metallization anneal temperatures from 700 °C to 900 °C were used to crystallize the Al and Si doped HfO{sub 2} thin films. Grazing incidence x-ray diffraction detected differences in peak broadening between the mixed Al and Si doped HfO{sub 2} thin films, indicating that strain may influence the formation of the ferroelectric phase with variations in the dopant layering. Endurance characteristics show that the mixed Al and Si doped HfO{sub 2} thin films exhibit a remanent polarization greater than 15 μC/cm{sup 2} up to 10{sup 8} cycles.

  4. Mixed Al and Si doping in ferroelectric HfO2 thin films

    NASA Astrophysics Data System (ADS)

    Lomenzo, Patrick D.; Takmeel, Qanit; Zhou, Chuanzhen; Chung, Ching-Chang; Moghaddam, Saeed; Jones, Jacob L.; Nishida, Toshikazu

    2015-12-01

    Ferroelectric HfO2 thin films 10 nm thick are simultaneously doped with Al and Si. The arrangement of the Al and Si dopant layers within the HfO2 greatly influences the resulting ferroelectric properties of the polycrystalline thin films. Optimizing the order of the Si and Al dopant layers led to a remanent polarization of ˜20 μC/cm2 and a coercive field strength of ˜1.2 MV/cm. Post-metallization anneal temperatures from 700 °C to 900 °C were used to crystallize the Al and Si doped HfO2 thin films. Grazing incidence x-ray diffraction detected differences in peak broadening between the mixed Al and Si doped HfO2 thin films, indicating that strain may influence the formation of the ferroelectric phase with variations in the dopant layering. Endurance characteristics show that the mixed Al and Si doped HfO2 thin films exhibit a remanent polarization greater than 15 μC/cm2 up to 108 cycles.

  5. Optical and electrical properties of polycrystalline and amorphous Al-Ti thin films

    NASA Astrophysics Data System (ADS)

    Canulescu, S.; Borca, C. N.; Rechendorff, K.; Davidsdóttir, S.; Pagh Almtoft, K.; Nielsen, L. P.; Schou, J.

    2016-04-01

    The structural, optical, and transport properties of sputter-deposited Al-Ti thin films have been investigated as a function of Ti alloying with a concentration ranging from 2% to 46%. The optical reflectivity of Al-Ti films at visible and near-infrared wavelengths decreases with increasing Ti content. X-ray absorption fine structure measurements reveal that the atomic ordering around Ti atoms increases with increasing Ti content up to 20% and then decreases as a result of a transition from a polycrystalline to amorphous structure. The transport properties of the Al-Ti films are influenced by electron scattering at the grain boundaries in the case of polycrystalline films and static defects, such as anti-site effects and vacancies in the case of the amorphous alloys. The combination of Ti having a real refractive index (n) comparable with the extinction coefficient (k) and Al with n much smaller than k allows us to explore the parameter space for the free-electron behavior in transition metal-Al alloys. The free electron model, applied for the polycrystalline Al-Ti films with Ti content up to 20%, leads to an optical reflectance at near infrared wavelengths that scales linearly with the square root of the electrical resistivity.

  6. Influence of hydrogen and hydrogen/methane plasmas on AlN thin films

    SciTech Connect

    Pobedinskas, P. Hardy, A.; Van Bael, M. K.; Haenen, K.; Degutis, G.; Dexters, W.

    2014-02-24

    Polycrystalline aluminum nitride (AlN) thin films are exposed to hydrogen and hydrogen/methane plasmas at different conditions. The latter plays an indispensable role in the subsequent deposition of nanocrystalline diamond thin films on AlN. The changes of AlN properties are investigated by means of Fourier transform infrared (FTIR) and Raman spectroscopies as well as atomic force microscopy. The E{sub 1}(TO) and E{sub 2}{sup 2} phonon mode frequencies blue-shift after the exposure to plasmas. The damping constant of E{sub 1}(TO) phonon, calculated from FTIR transmission spectra using the factorized model of a damped oscillator, and the width of E{sub 2}{sup 2} peak in Raman spectra decrease with increasing substrate temperature till the decomposition of AlN thin film becomes notable. It is proven that these changes are driven by the plasmas as annealing in vacuum does not induce them.

  7. Perpendicular magnetic anisotropy in Mn2CoAl thin film

    NASA Astrophysics Data System (ADS)

    Sun, N. Y.; Zhang, Y. Q.; Fu, H. R.; Che, W. R.; You, C. Y.; Shan, R.

    2016-01-01

    Heusler compound Mn2CoAl (MCA) is attracting more attentions due to many novel properties, such as high resistance, semiconducting behavior and suggestion as a spin-gapless material with a low magnetic moment. In this work, Mn2CoAl epitaxial thin film was prepared on MgO(100) substrate by magnetron sputtering. The transport property of the film exhibits a semiconducting-like behavior. Moreover, our research reveals that perpendicular magnetic anisotropy (PMA) can be induced in very thin Mn2CoAl films resulting from Mn-O and Co-O bonding at Mn2CoAl/MgO interface, which coincides with a recent theoretical prediction. PMA and low saturation magnetic moment could lead to large spin-transfer torque with low current density in principle, and thus our work may bring some unanticipated Heusler compounds into spintronics topics such as the domain wall motion and the current-induced magnetization reversal.

  8. Intrinsic stress evolution during amorphous oxide film growth on Al surfaces

    SciTech Connect

    Flötotto, D. Wang, Z. M.; Jeurgens, L. P. H.; Mittemeijer, E. J.

    2014-03-03

    The intrinsic stress evolution during formation of ultrathin amorphous oxide films on Al(111) and Al(100) surfaces by thermal oxidation at room temperature was investigated in real-time by in-situ substrate curvature measurements and detailed atomic-scale microstructural analyses. During thickening of the oxide a considerable amount of growth stresses is generated in, remarkably even amorphous, ultrathin Al{sub 2}O{sub 3} films. The surface orientation-dependent stress evolutions during O adsorption on the bare Al surfaces and during subsequent oxide-film growth can be interpreted as a result of (i) adsorption-induced surface stress changes and (ii) competing processes of free volume generation and structural relaxation, respectively.

  9. Influence of hydrogen and hydrogen/methane plasmas on AlN thin films

    NASA Astrophysics Data System (ADS)

    Pobedinskas, P.; Degutis, G.; Dexters, W.; Hardy, A.; Van Bael, M. K.; Haenen, K.

    2014-02-01

    Polycrystalline aluminum nitride (AlN) thin films are exposed to hydrogen and hydrogen/methane plasmas at different conditions. The latter plays an indispensable role in the subsequent deposition of nanocrystalline diamond thin films on AlN. The changes of AlN properties are investigated by means of Fourier transform infrared (FTIR) and Raman spectroscopies as well as atomic force microscopy. The E1(TO) and E22 phonon mode frequencies blue-shift after the exposure to plasmas. The damping constant of E1(TO) phonon, calculated from FTIR transmission spectra using the factorized model of a damped oscillator, and the width of E22 peak in Raman spectra decrease with increasing substrate temperature till the decomposition of AlN thin film becomes notable. It is proven that these changes are driven by the plasmas as annealing in vacuum does not induce them.

  10. Structural, magnetic and transport properties of Co2FeAl Heusler films with varying thickness

    NASA Astrophysics Data System (ADS)

    Wang, Xiaotian; Li, Yueqing; Du, Yin; Dai, Xuefang; Liu, Guodong; Liu, Enke; Liu, Zhongyuan; Wang, Wenhong; Wu, Guangheng

    2014-08-01

    We report on a systematic study of the structural, magnetic properties and the anomalous Hall effect, in the Heusler alloy Co2FeAl (CFA) epitaxial films on MgO (001), as a function of film thickness. It was found that the epitaxial CFA films show a highly ordered B2 structure with an in-plane uniaxial magnetic anisotropy. The electrical transport properties reveal that the lattice and magnon scattering contributions to the longitudinal resistivity. Independent on the thickness of films, the anomalous Hall resistivity of CFA films is found to be dominated by skew scattering only. Moreover, the anomalous Hall resistivity shows weakly temperature dependent behavior, and its absolute value increases as the thickness decreases. We attribute this temperature insensitivity in the anomalous Hall resistivity to the weak temperature dependent of tunneling spin-polarization in the CFA films, while the thickness dependence behavior is likely due to the increasing significance of interface or free surface electronic states.

  11. Al:ZnO thin film: An efficient matrix for cholesterol detection

    NASA Astrophysics Data System (ADS)

    Batra, Neha; Tomar, Monika; Gupta, Vinay

    2012-12-01

    Al doped ZnO thin film (Al:ZnO) has been realized as a potential matrix for the development of efficient cholesterol biosensor. The correlation between the structural and electrical properties of ZnO thin film with varying Al doping concentration (1% to 5%) and their cyclic voltammetric (CV) response has been studied. 2% Al doped ZnO films were found to give the best CV response and were further utilized for immobilization of cholesterol oxidase (ChOx) to detect cholesterol. Amperometric and photometric studies reveal that the prepared bioelectrode based on 2% Al doped ZnO matrix (ChOx/Al:ZnO/Pt/glass) is highly sensitive (sensitivity = 173 μAmM-1 cm-2) to the detection of cholesterol in the wide range from 0.6-12.9 mM (25-500 mg/dl). A relatively low value of enzyme's kinetic parameter (Michaelis menten constant, 2.53 mM) indicates enhanced affinity of the immobilized ChOx toward cholesterol. The prepared bioelectrode is found to be exhibiting high shelf life (10 weeks) having negligible interference with the presence of other biomolecules in human serum indicating promising application of Al doped ZnO thin films for cholesterol biosensing.

  12. Corrosion resistance of sintered NdFeB coated with SiC/Al bilayer thin films by magnetron sputtering

    NASA Astrophysics Data System (ADS)

    Huang, Yiqin; Li, Heqin; Zuo, Min; Tao, Lei; Wang, Wei; Zhang, Jing; Tang, Qiong; Bai, Peiwen

    2016-07-01

    The poor corrosion resistance of sintered NdFeB imposes a great challenge in industrial applications. In this work, the SiC/Al bilayer thin films with the thickness of 510 nm were deposited on sintered NdFeB by magnetron sputtering to improve the corrosion resistance. A 100 nm Al buffer film was used to reduce the internal stress between SiC and NdFeB and improve the surface roughness of the SiC thin film. The morphologies and structures of SiC/Al bilayer thin films and SiC monolayer film were investigated with FESEM, AFM and X-ray diffraction. The corrosion behaviors of sintered NdFeB coated with SiC monolayer film and SiC/Al bilayer thin films were analyzed by polarization curves. The magnetic properties were measured with an ultra-high coercivity permanent magnet pulse tester. The results show that the surface of SiC/Al bilayer thin films is more compact and uniform than that of SiC monolayer film. The corrosion current densities of SiC/Al bilayer films coated on NdFeB in acid, alkali and salt solutions are much lower than that of SiC monolayer film. The SiC/Al bilayer thin films have little influence to the magnetic properties of NdFeB.

  13. Structural and optical properties of Al/ZnO thin films deposited by radio frequency sputtering

    NASA Astrophysics Data System (ADS)

    Osanyinlusi, O.; Mukolu, A. I.; Zebaze Kana, M. G.

    2016-09-01

    The effects of annealing temperature and variation of sample thickness on the structural and optical properties of zinc oxide thin films with aluminium contact (Al/ZnO) have been investigated. The study involved the synthesis of a bilayer thin film of Al/ZnO with varied thicknesses on a glass slide substrate by using radio frequency magnetron sputtering deposition technique. 99.99% pure ZnO and aluminium were used as the sputtering target. The films were then annealed in vacuum at annealing temperatures of 200 °C and 400 °C. The structural and optical properties of Al/ZnO thin films grown were characterized by x-ray diffraction (XRD) and optical measurements respectively. The results obtained from the XRD patterns showed that Al/ZnO films (both as-deposited and annealed), exhibits a crystalline structure with (002) preferred orientation. The peak intensity of the preferred plane increases as the annealing temperature increases. The optical studies of the Al/ZnO films showed a maximum value of transmittance ranging from 82% to 91% depending on the condition of the films. A decrease in transmittance as the thickness of the films increases was observed. The transmittance also increased with increasing annealing temperature. The energy gaps (E g) were determined from the transmittance data and found to be in the range 3.73-3.83 eV. The results obtained from the experiment also show that the optical band gap increases as the thickness and annealing temperature increase.

  14. Characterization of nanocrystalline ZnO:Al films by sol-gel spin coating method

    SciTech Connect

    Gareso, P. L. Rauf, N. Juarlin, E.; Sugianto,; Maddu, A.

    2014-09-25

    Nanocrystalline ZnO films doped with aluminium by sol-gel spin coating method have been investigated using optical transmittance UV-Vis and X-ray diffraction (X-RD) measurements. ZnO films were prepared using zinc acetate dehydrate (Zn(CH{sub 3}COO){sub 2}@@‡2H{sub 2}O), ethanol, and diethanolamine (DEA) as a starting material, solvent, and stabilizer, respectively. For doped films, AlCl{sub 3} was added to the mixture. The ZnO:Al films were deposited on a transparent conductive oxide (TCO) substrate using spin coating technique at room temperature with a rate of 3000 rpm in 30 sec. The deposited films were annealed at various temperatures from 400°C to 600°C during 60 minutes. The transmittance UV-Vis measurement results showed that after annealing at 400°C, the energy band gap profile of nanocrystalline ZnO:Al film was a blue shift. This indicated that the band gap of ZnO:Al increased after annealing due to the increase of crystalline size. As the annealing temperature increased the bandgap energy was a constant. In addition to this, there was a small oscillation occurring after annealing compared to the as–grown samples. In the case of X-RD measurements, the crystalinity of the films were amorphous before annealing, and after annealing the crystalinity became enhance. Also, X-RD results showed that structure of nanocrystalline ZnO:Al films were hexagonal polycrystalline with lattice parameters are a = 3.290 Å and c = 5.2531 Å.

  15. Cubic AlN thin film formation on quartz substrate by pulse laser deposition

    NASA Astrophysics Data System (ADS)

    Biju, Zheng; Wen, Hu

    2016-06-01

    Cubic AlN thin films were obtained on quartz substrate by pulse laser deposition in a nitrogen reactive atmosphere. A Nd-YAG laser with a wavelength of 1064 nm was used as the laser source. In order to study the influence of the process parameters on the deposited AlN film, the experiments were performed at various technique parameters of laser energy density from 70 to 260 J/cm2, substrate temperature from room temperature to 800 °C and nitrogen pressure from 0.1 to 50 Pa. X-ray diffraction, scanning electron microscopy and X-ray photoelectron spectroscopy were applied to characterize the structure and surface morphology of the deposited AlN films. It was found that the structure of AlN films deposited in a vacuum is rocksalt under the condition of substrate temperature 600-800 °C, nitrogen pressure 10-0.1 Pa and a moderate laser energy density (190 J/cm2). The high quality AlN film exhibited good optical property. Project supported by the Yunnan Provincial Natural of Science Foundation of China (No. KKSY201251089).

  16. Fabrication of thermally evaporated Al thin film on cylindrical PET monofilament for wearable computing devices

    NASA Astrophysics Data System (ADS)

    Liu, Yang; Kim, Eunju; Han, Jeong In

    2016-01-01

    During the initial development of wearable computing devices, the conductive fibers of Al thin film on cylindrical PET monofilament were fabricated by thermal evaporation. Their electrical current-voltage characteristics curves were excellent for incorporation into wearable devices such as fiber-based cylindrical capacitors or thin film transistors. Their surfaces were modified by UV exposure and dip coating of acryl or PVP to investigate the surface effect. The conductive fiber with PVP coating showed the best conductivities because the rough surface of the PET substrate transformed into a smooth surface. The conductivities of PET fiber with and without PVP were 6.81 × 103 Ω-1cm-1 and 5.62 × 103 Ω-1cm-1, respectively. In order to understand the deposition process of Al thin film on cylindrical PET, Al thin film on PET fiber was studied using SEM (Scanning Electron Microscope), conductivities and thickness measurements. Hillocks on the surface of conductive PET fibers were observed and investigated by AFM on the surface. Hillocks were formed and grown during Al thermal evaporation because of severe compressive strain and plastic deformation induced by large differences in thermal expansion between PET substrate and Al thin film. From the analysis of hillock size distribution, it turns out that hillocks grew not transversely but longitudinally. [Figure not available: see fulltext.

  17. Pyroelectric and piezoelectric responses of thin AlN films epitaxy-grown on a SiC/Si substrate

    NASA Astrophysics Data System (ADS)

    Kukushkin, S. A.; Osipov, A. V.; Sergeeva, O. N.; Kiselev, D. A.; Bogomolov, A. A.; Solnyshkin, A. V.; Kaptelov, E. Yu.; Senkevich, S. V.; Pronin, I. P.

    2016-05-01

    This paper presents the results of pyroelectric and piezoelectric studies of AlN films formed by chloride-hydride epitaxy (CHE) and molecular beam epitaxy (MBE) on epitaxial SiC nanolayers grown on Si by the atom substitution method. The surface topography and piezoelectric and pyroelecrtric responses of AlN films have been analyzed. The results of the study have shown that the vertical component of the piezoresponse in CHE-grown AlN films is more homogeneous over the film area than that in MBE-grown AlN films. However, the signal from the MBE-synthesized AlN films proved to be stronger. The inversion of the polar axis (polarization vector) on passage from MBE-grown AlN films to CHE-grown AlN films has been found experimentally. It has been shown that the polar axis in MBE-grown films is directed from the free surface of the film toward the Si substrate while, in CHE-grown films, the polarization vector is directed toward the free surface.

  18. Tribological properties of Ag/Ti films on Al2O3 ceramic substrates

    NASA Technical Reports Server (NTRS)

    Dellacorte, Christopher; Pepper, Stephen V.; Honecy, Frank S.

    1991-01-01

    Ag solid lubricant films, with a thin Ti interlayer for enhanced adhesion, were sputter deposited on Al2O3 substrate disks to reduce friction and wear. The dual Ag/Ti films were tested at room temperature in a pin-on-disk tribometer sliding against bare, uncoated Al2O3 pins under a 4.9 N load at a sliding velocity of 1 m/s. The Ag/Ti films reduced the friction coefficient by 50 percent to about 0.41 compared to unlubricated baseline specimens. Pin wear was reduced by a factor of 140 and disk wear was reduced by a factor of 2.5 compared to the baseline. These films retain their good tribological properties including adhesion after heat treatments at 850 C and thus may be able to lubricate over a wide temperature range. This lubrication technique is applicable to space lubrication, advanced heat engines, and advanced transportation systems.

  19. Epitaxial growth and electronic properties of mixed valence YbAl3 thin films

    NASA Astrophysics Data System (ADS)

    Chatterjee, Shouvik; Sung, Suk Hyun; Baek, David J.; Kourkoutis, Lena F.; Schlom, Darrell G.; Shen, Kyle M.

    2016-07-01

    We report the growth of thin films of the mixed valence compound YbAl3 on MgO using molecular-beam epitaxy. Employing an aluminum buffer layer, epitaxial (001) films can be grown with sub-nm surface roughness. Using x-ray diffraction, in situ low-energy electron diffraction, and aberration-corrected scanning transmission electron microscopy, we establish that the films are ordered in the bulk as well as at the surface. Our films show a coherence temperature of 37 K, comparable to that reported for bulk single crystals. Photoelectron spectroscopy reveals contributions from both f13 and f12 final states establishing that YbAl3 is a mixed valence compound and shows the presence of a Kondo Resonance peak near the Fermi-level.

  20. RuAl thin films on high-temperature piezoelectric substrates

    NASA Astrophysics Data System (ADS)

    Seifert, M.; Menzel, S. B.; Rane, G. K.; Hoffmann, M.; Gemming, T.

    2015-08-01

    The phase formation, structural and electrical properties of thin Ru-Al alloy films prepared on LGS (La3Ga5SiO14) and CTGS (Ca3TaGa3Si2O14) as well as on Si/SiO2(reference) substrates are analyzed for samples prepared at room temperature and after annealing for 10 h in high vacuum at 600 °C and 800 °C. The physical characterization reveals a strong dependence of the film quality on the chosen substrate. While the RuAl phase is clearly formed on the Si/SiO2 reference substrate, the phase is not stable on LGS and only weakly formed on CTGS due to a substrate decomposition effect and related Ga and O diffusion into the RuAl film.

  1. Depth-resolved cathodoluminescence of a homoepitaxial AlN thin film

    NASA Astrophysics Data System (ADS)

    Silveira, E.; Freitas, J. A.; Slack, G. A.; Schowalter, L. J.; Kneissl, M.; Treat, D. W.; Johnson, N. M.

    2005-07-01

    In the present work we will report on the optical properties of an AlN film homoepitaxially grown on a high-quality large bulk AlN single crystal. The latter was grown by a sublimation-recondensation technique, while the film was grown by organometallic vapor-phase epitaxy. Cathodoluminescence measurements were performed using electron beam energies between 2 and 10 keV in order to excite the sample and so to probe different sample depths, making it possible to differentiate between different features which originate in the AlN homoepitaxial film. The penetration depth has been determined through the calculation of the Bohr-Bethe maximum range of excitation using the approximation to the Everhart-Hoff expression for the energy loss within a solid.

  2. Rhombohedral AlPt films formed by self-propagating, high temperature synthesis.

    SciTech Connect

    Adams, David Price; Rodriguez, Mark Andrew; Kotula, Paul Gabriel

    2005-11-01

    High-purity AlPt thin films prepared by self-propagating, high temperature combustion synthesis show evidence for a new rhombohedral phase. Sputter deposited Al/Pt multilayers of various designs are reacted at different rates in air and in vacuum, and each form a new trigonal/hexagonal aluminide phase with unit cell parameters a = 15.571(8) {angstrom}, c = 5.304(1) {angstrom}, space group R-3 (148), and Z, the number of formula units within a unit cell, = 39. The lattice is isostructural to that of the AlPd R-3 lattice as reported by Matkovic and Schubert (Matkovic, 1977). Reacted films have a random in-plane crystallographic texture, a modest out-of-plane (001) texture, and equiaxed grains with dimensions on the order of film thickness.

  3. THz Transmittance and Electrical Properties Tuning across IMT in Vanadium Dioxide Films by Al Doping.

    PubMed

    Wu, Xuefei; Wu, Zhiming; Ji, Chunhui; Zhang, Huafu; Su, Yuanjie; Huang, Zehua; Gou, Jun; Wei, Xiongbang; Wang, Jun; Jiang, Yadong

    2016-05-11

    Due to the insulator-metal transition (IMT) performance covering the full terahertz (THz) band, VO2 films were extensively investigated as an excellent candidate for modulating, switching, and memory devices. However, some remarkable absorption peaks owing to the infrared-active phonon modes suppressed the films' modulation ability and restricted the films' application in high THz frequency. Here we prepared Al-doped VO2 films on (111) directional silicon substrate, which rapidly counteracted the absorption peak and exhibited widely modulating properties. Al dopants introduced into the films brought a significant shift to high frequency in Raman spectra. The result was attributed to the effect of modifying VO2 crystal, leading the V-O bond to be strained more intensively, contracting the distance of the V-V dimers. All the Raman results indicated an oxidation effect by Al doping. However, the XPS results showed a valence reduction of the vanadium element, which was caused by the valence difference between V and Al atoms. In addition to the surface morphology characterization, the IMT properties of the shrinkage of hysteresis width and resistance variations in both electrical and THz optical aspects have been systemically analyzed. An additional difference is that the temperature of the optical transition behaves lower than the electrical transition observed, which resulted from the mechanism of transition propagation and boundary barriers.

  4. Static and dynamic magnetic property of MBE-grown Co2FeAl films

    NASA Astrophysics Data System (ADS)

    Qiao, Shuang; Nie, Shuaihua; Huo, Yan; Zhao, Jianhua; Wu, Yizheng; Zhang, Xinhui

    2014-08-01

    In this work, the static and dynamic magnetic properties of Co2FeAl films grown by molecular beam epitaxy (MBE) were studied by employing the magneto-optical Kerr rotation and ferromagnetic resonance (FMR) measurements. The growth temperature dependent magnetocrystalline anisotropy of MBE-grown Co2FeAl films were first investigated by employing the rotating magneto-optical Kerr effect. Then the magnetization dynamics and Gilbert damping property for high quality Co2FeAl films were investigated in detail by combining both the FMR and time-resolved magneto-optical Kerr rotation techniques. The apparent damping parameter was found to show strong dependence on the strength of the applied magnetic field at low-field regime, but decrease drastically with increasing magnetic field and eventually become a constant value of 0.004 at high-field regime. The inhomogeneity of magnetocrystalline anisotropy and two-magnon scattering are suggested to be responsible for the observed abnormal damping properties observed especially at low field regime. The intrinsic damping parameter of 0.004 is deduced for our highly-ordered Co2FeAl film. Our results provide essential information for highly-ordered MBE-grown Co2FeA film and its possible application in spintronic devices.

  5. Atomic layer deposition of Al2O3 thin films using dimethylaluminum isopropoxide and water

    NASA Astrophysics Data System (ADS)

    Cho, Wontae; Sung, Kiwhan; An, Ki-Seok; Sook Lee, Sun; Chung, Taek-Mo; Kim, Yunsoo

    2003-07-01

    Dimethylaluminum isopropoxide (DMAI), (CH3)2AlOCH(CH3)2, a precursor originally developed for the metalorganic chemical vapor deposition of alumina, was adopted as a new precursor for growing aluminum oxide thin films on HF-treated Si(001) substrates by atomic layer deposition (ALD). This precursor is stable for a prolonged period of storage time under inert atmosphere (such as in nitrogen or argon) and does not react vigorously in air, and therefore is easy to handle and safe, without causing hazards. The self-limiting ALD process by alternate surface reactions of DMAI and H2O was confirmed by thicknesses of the grown aluminum oxide films measured as functions of the DMAI pulse time and the number of DMAI-H2O cycles. A maximum growth rate of ~1.06 Å/cycle was achieved in the substrate temperature range ~120-150 °C. Growth of stoichiometric Al2O3 thin films without appreciable carbon incorporation was verified by Rutherford backscattering spectrometry. Atomic force microscopy images showed atomically flat and uniform surfaces. In particular, a cross-sectional high-resolution transmission electron microscopy image of an Al2O3 film shows that there is no distinguishable interfacial oxide layer between the Al2O3 film and the Si substrate. These results prove the validity of DMAI as a new ALD source for aluminum oxide.

  6. Oxide film defects in Al alloys and the formation of hydrogen- related porosity

    NASA Astrophysics Data System (ADS)

    Griffiths, W. D.; Gerrard, A. J.; Yue, Y.

    2016-03-01

    Double oxide film defects have also been held responsible for the origins of hydrogen porosity, where hydrogen dissolved in the Al melt passes into the interior atmosphere of the double oxide film defect causing it to inflate. However, this is in opposition to long- established evidence that H cannot readily diffuse through aluminium oxide. To investigate this further, samples of commercial purity Al were first degassed to remove their initial H content, and then heated to above their melting point and held in atmospheres of air and nitrogen respectively, to determine any differences in H pick-up. The experiment showed that samples held in an oxidising atmosphere, and having an oxide skin, picked up significantly less H than when the samples were held in a nitrogen atmosphere, which resulted in the formation of AlN in cracks in the oxide skin of the sample. It is suggested that double oxide film defects can give rise to hydrogen-related porosity, but this occurs more quickly when the oxygen in the original oxide film defect has been consumed by reaction with the surrounding melt and nitrogen reacts to form AlN, which is more permeable to H than alumina, more easily allowing the oxide film defect to give rise to a hydrogen pore. This is used to interpret results from an earlier synchrotron experiment, in which a small pore was seen to grow into a larger pore, while an adjacent large pore remained at a constant size.

  7. Deposition of highly textured AlN thin films by reactive high power impulse magnetron sputtering

    SciTech Connect

    Moreira, Milena A.; Törndahl, Tobias; Katardjiev, Ilia; Kubart, Tomas

    2015-03-15

    Aluminum nitride thin films were deposited by reactive high power impulse magnetron sputtering (HiPIMS) and pulsed direct-current on Si (100) and textured Mo substrates, where the same deposition conditions were used for both techniques. The films were characterized by x-ray diffraction and atomic force microscopy. The results show a pronounced improvement in the AlN crystalline texture for all films deposited by HiPIMS on Si. Already at room temperature, the HiPIMS films exhibited a strong preferred (002) orientation and at 400 °C, no contributions from other orientations were detected. Despite the low film thickness of only 200 nm, an ω-scan full width at half maximum value of 5.1° was achieved on Si. The results are attributed to the high ionization of sputtered material achieved in HiPIMS. On textured Mo, there was no significant difference between the deposition techniques.

  8. Thickness-dependent fracture behaviour of flexible ZnO : Al thin films

    NASA Astrophysics Data System (ADS)

    Mohanty, Bhaskar Chandra; Choi, Hong Rak; Muk Choi, Yong; Cho, Yong Soo

    2011-01-01

    The effects of thickness on flexibility and crack initiation in ZnO : Al thin films sputter-deposited on polyethersulfone substrates have been investigated. With an increase in thickness, root-mean-square roughness and average crystallite size increase linearly. It is found that the higher the thickness, the lower is the strain required to initiate cracks in the film. The thinnest film (~240 nm) exhibits a crack-initiating critical strain of 0.96% and a saturated crack density of 0.10 µm-1. A critical energy release rate of 68.5 J m-2 and a mode I fracture toughness of 3.2 MPa m0.5 are estimated for the films. These parameters are found to exhibit a linear dependence on film thickness.

  9. Pulsed laser deposition of Al-doped ZnO films on glass and polycarbonate

    NASA Astrophysics Data System (ADS)

    Tan, Kwan Chu; Lee, Yen Sian; Yap, Seong Ling; Kok, Soon Yie; Nee, Chen Hon; Siew, Wee Ong; Tou, Teck Yong; Yap, Seong Shan

    2014-01-01

    Al-doped ZnO (AZO) films were deposited on glass and polycarbonate (PC) at room temperature by using pulsed Nd:YAG laser at 355 nm. AZO thin films were obtained for both substrates at laser fluences from 2 to 5 J/cm2 in O2 partial pressure of 2.1 Pa. The effects of laser fluence on the structural, electrical, and optical properties of the films were investigated. The films with lowest resistivity and highest transmittance have been obtained at 2 J/cm2. The resistivities were 2.29×10-3 Ω cm for AZO on glass and 1.49×10-3 Ω cm for AZO on PC. With increasing laser fluence, the deposited films have lower crystallinity, higher resistivity, and smaller optical bandgap.

  10. Perpendicularly magnetized {tau}-MnAl (001) thin films epitaxied on GaAs

    SciTech Connect

    Nie, S. H.; Zhu, L. J.; Lu, J.; Pan, D.; Wang, H. L.; Yu, X. Z.; Xiao, J. X.; Zhao, J. H.

    2013-04-15

    Perpendicularly magnetized {tau}-MnAl films have been epitaxied on GaAs (001) by molecular-beam epitaxy. Crystalline quality and magnetic properties of the samples were strongly dependent on growth temperature. The highest coercivity of 10.7 kOe, saturation magnetization of 361.4 emu/cm{sup 3}, perpendicular magnetic anisotropy constant of 13.65 Merg/cm{sup 3}, and magnetic energy product of 4.44 MGOe were achieved. These tunable magnetic properties make MnAl films valuable as excellent and cost-effective alternative for not only high density perpendicular magnetic recording storage and spintronics devices but also permanent magnets.

  11. Structural, electron transportation and magnetic behavior transition of metastable FeAlO granular films

    PubMed Central

    Bai, Guohua; Wu, Chen; Jin, Jiaying; Yan, Mi

    2016-01-01

    Metal-insulator granular film is technologically important for microwave applications. It has been challenging to obtain simultaneous high electrical resistivity and large saturation magnetization due to the balance of insulating non-magnetic and metallic magnetic components. FeAlO granular films satisfying both requirements have been prepared by pulsed laser deposition. The as-deposited film exhibits a high resistivity of 3700 μΩ∙cm with a negative temperature coefficient despite that Fe content (0.77) exceeds the percolation threshold. This originates from its unique microstructure containing amorphous Fe nanoparticles embedded in Al2O3 network. By optimizing the annealing conditions, superior electromagnetic properties with enhanced saturation magnetization (>1.05 T), high resistivity (>1200 μΩ∙cm) and broadened Δf (>3.0 GHz) are obtained. Phase separation with Al2O3 aggregating as inclusions in crystallized Fe(Al) matrix is observed after annealing at 673 K, resulting in a metallic-like resistivity. We provide a feasible way to achieve both high resistivity and large saturation magnetization for the FeAlO films with dominating metallic component and show that the microstructure can be tuned for desirable performance. PMID:27075955

  12. Electronic properties and bonding characteristics of AlN:Ag thin film nanocomposites

    SciTech Connect

    Lekka, Ch. E.; Patsalas, P.; Komninou, Ph.; Evangelakis, G. A.

    2011-03-01

    We present theoretical and experimental results on the bonding and structural characteristics of AlN:Ag thin film nanocomposites obtained by means of density functional theory (DFT) computations, high resolution transmission electron microscopy (HRTEM) observations, Auger electron spectroscopy (AES), and x-ray diffraction (XRD) measurements. From the theoretical calculations it was determined that the presence of the Ag substitutional of N or Al atoms affects the electronic density of states (EDOS) of the resulting systems. In particular, occupied energy states are introduced (between others) that lie within the energy gap of the AlN matrix due to Ag-d, Al-p (accompanied with a charge transfer from Al to Ag), Ag-p, and N-p hybridizations, respectively. The effect is predicted to be even more pronounced in the case of Ag nanoparticle inclusions affecting the EDOS of the composite system. These predictions were verified by the HRTEM images that gave unequivocal evidence for the presence and stability of Ag nanoparticles in the AlN matrix. In addition, the AES data suggested a metal-metal (Ag-Al) bonding preference, while the XRD patterns revealed that the atomic Ag dispersions in the AlN thin films results in a small elongation of the Wurtzite lattice, which is in agreement with the DFT predictions. These results may useful in tailoring the electronic response of AlN-based systems and the design of devices for various opto-electronic applications.

  13. Electronic state of Er in sputtered AlN:Er films determined by magnetic measurements

    SciTech Connect

    Narang, V.; Seehra, M. S.; Korakakis, D.

    2014-12-07

    The optoelectronic and piezoelectric properties of AlN:Er thin films have been of great recent interest for potential device applications. In this work, the focus is on the electronic state of Er in AlN:Er thin films prepared by reactive magnetron sputtering on (001) p-type Si substrate. X-ray diffraction shows that Er doping expands the lattice and the AlN:Er film has preferential c-plane orientation. To determine whether Er in AlN:Er is present as Er metal, Er{sub 2}O{sub 3}, or Er{sup 3+} substituting for Al{sup 3+}, detailed measurements and analysis of the temperature dependence (2 K–300 K) of the magnetization M at a fixed magnetic field H along with the M vs. H data at 2 K up to H = 90 kOe are presented. The presence of Er{sub 2}O{sub 3} and Er metal is ruled out since their characteristic magnetic transitions are not observed in the AlN:Er sample. Instead, the observed M vs. T and M vs. H variations are consistent with Er present as Er{sup 3+} substituting for Al{sup 3+} in AlN:Er at a concentration x = 1.08% in agreement with x = 0.94% ± 0.20% determined using x-ray photoelectron spectroscopy (XPS). The larger size of Er{sup 3+} vs. Al{sup 3+}explains the observed lattice expansion of AlN:Er.

  14. Characterization of Al/CuO nanoenergetic multilayer films integrated with semiconductor bridge for initiator applications

    NASA Astrophysics Data System (ADS)

    Zhu, Peng; Shen, Ruiqi; Ye, Yinghua; Fu, Shuai; Li, Dongle

    2013-05-01

    This paper describes the ignition characteristics of Al/CuO nanoenergetic multilayer films (nEMFs) integrated with semiconductor bridge (SCB). The as-deposited Al/CuO nEMFs were identified with SEM and differential scanning calorimetry. Results show that distinct Al/CuO nEMFs are sputter deposited in a layered geometry, and the Al/CuO nEMFs gives a reaction heat equal to 2181 J/g. The firing experiments show that Al/CuO nEMFs have no influence on the electrical properties of SCB. Furthermore, the rapid combustion of Al/CuO nEMFs is able to assist SCB generating high-temperature plasma and products, such that enhance the ignition reliability.

  15. Structural and Magnetic Properties of Fe Films Electrodeposited on Al Substrates

    NASA Astrophysics Data System (ADS)

    Mebarki, M.; Layadi, A.; Khelladi, M. R.; Azizi, A.; Tiercelin, N.; Preobrazhensky, V.; Pernod, P.

    2016-07-01

    Series of Fe films have been prepared by electrodeposition in a solution of iron chloride onto Al substrate. Different deposition times were used in the elaboration process. The texture, the strain, and the grain size values were derived from X-ray diffraction experiments. Scanning electron microscopy (SEM) has been used to get the surface and the cross section images. Vibrating Sample magnetometer has been used to obtain the hysteresis curves; the external magnetic field was applied in different directions in the film plane, and also perpendicular to the film. Hysteresis curves have been obtained at low temperatures [120 K (-153 °C) to room temperature]. The <100> texture, small strain, and grain size ranging from 58 to 113 nm are found for these Fe/Al films. All samples show an in-plane magnetic anisotropy, with no preferred orientation within the film plane. Depending on the film thickness range, different mechanisms have been found to be responsible for the coercive field H C behavior. These magnetic properties are correlated with the structural ones and with the SEM observations.

  16. Electronic structure and electrical transport in ternary Al-Mg-B films prepared by magnetron sputtering

    NASA Astrophysics Data System (ADS)

    Yan, C.; Jha, S. K.; Qian, J. C.; Zhou, Z. F.; He, B.; Ng, T. W.; Li, K. Y.; Zhang, W. J.; Bello, I.; Klemberg-Sapieha, J. E.; Martinu, L.

    2013-03-01

    Nanostructured ternary Al-Mg-B films possess high hardness and corrosion resistance. In the present work, we study their electronic structure and electrical transport. The films exhibit semiconducting characteristics with an indirect optical-bandgap of 0.50 eV, as deduced from the Tauc plots, and a semiconductor behavior with a Fermi level of ˜0.24 eV below the conduction band. Four-probe and Hall measurements indicated a high electrical conductivity and p-type carrier mobility, suggesting that the electrical transport is mainly due to hole conduction. Their electrical properties are explained in terms of the film nanocomposite microstructure consisting of an amorphous B-rich matrix containing AlMgB14 nanoparticles.

  17. Electronic structure and electrical transport in ternary Al-Mg-B films prepared by magnetron sputtering

    SciTech Connect

    Yan, C.; Qian, J. C.; He, B.; Ng, T. W.; Zhang, W. J.; Bello, I.; Jha, S. K.; Zhou, Z. F.; Li, K. Y.; Klemberg-Sapieha, J. E.; Martinu, L.

    2013-03-25

    Nanostructured ternary Al-Mg-B films possess high hardness and corrosion resistance. In the present work, we study their electronic structure and electrical transport. The films exhibit semiconducting characteristics with an indirect optical-bandgap of 0.50 eV, as deduced from the Tauc plots, and a semiconductor behavior with a Fermi level of {approx}0.24 eV below the conduction band. Four-probe and Hall measurements indicated a high electrical conductivity and p-type carrier mobility, suggesting that the electrical transport is mainly due to hole conduction. Their electrical properties are explained in terms of the film nanocomposite microstructure consisting of an amorphous B-rich matrix containing AlMgB{sub 14} nanoparticles.

  18. Effect of In/Al ratios on structural and optical properties of InAlN films grown on Si(100) by RF-MOMBE

    PubMed Central

    2014-01-01

    In x Al1-x N films were deposited on Si(100) substrate using metal-organic molecular beam epitaxy. We investigated the effect of the trimethylindium/trimethylaluminum (TMIn/TMAl) flow ratios on the structural, morphological, and optical properties of In x Al1-x N films. Surface morphologies and microstructure of the In x Al1-x N films were measured by atomic force microscopy, scanning electron microscopy, X-ray diffraction (XRD), and transmission electron microscopy (TEM), respectively. Optical properties of all films were evaluated using an ultraviolet/visible/infrared (UV/Vis/IR) reflection spectrophotometer. XRD and TEM results indicated that In x Al1-x N films were preferentially oriented in the c-axis direction. Besides, the growth rates of In x Al1-x N films were measured at around 0.6 μm/h in average. Reflection spectrum shows that the optical absorption of the In x Al1-x N films redshifts with an increase in the In composition. PMID:24855462

  19. Grain growth in thin Al films during deposition from partially ionized vapor

    NASA Astrophysics Data System (ADS)

    Gusev, I. V.; Mokhniuk, A. A.

    2016-07-01

    Grain growth in thin Al films during deposition from partially ionized vapor flux with simultaneous self-ion bombardment was studied in this work. The films were deposited at constant ion energy of 940 eV and total specific power of 0.4 W/cm2 while the deposition time t of 6 s to 246 s and the resulting substrate temperature (Ts/Tm of 0.35-0.96) were varied. Thin continuous Al films exhibited normal grain growth through the entire experimental range of deposition time without limitation of grain growth by the film thickness effect. Three kinetic stages of the grain growth were observed within 100 s of deposition time: the first one exhibits very slow grain growth, accelerated grain growth occurs in the second stage and then it rapidly changes to a retardation and stagnation mode in the third stage. Large average grain sizes Dg up to 11.3 μm at film thickness of 1.4 μm and integral grain growth rates up to 0.16 μm/s were observed in this study. The experimental results were evaluated against various mechanisms of inhibition of grain growth. An estimate of the effective activation energy of the grain growth yields a value of 0.27 eV which is lower than that of the bulk Al and much higher than the activation energy of surface self-diffusion on (1 1 1)Al monocrystal. The power law Dg = (k t)0.5 gives good match with experimental results in the initial deposition phase preceding the grain growth retardation, while another model that is based on the grain size dependent pinning force adequately explains the entire grain size dependence on time. It is deemed both ion enhanced film/surface interaction and impurities on one side and thermal grooves on another side contribute to the rapid retardation of the grain grooves commencing the second growth stage.

  20. Effect of surface crack on nanoimprint process of Al thin film

    NASA Astrophysics Data System (ADS)

    Wang, Y. P.; Xu, J. G.; Song, H. Y.; Sun, J. X.; Zhou, Y. X.

    2014-02-01

    The effect of surface crack on nanoimprint behavior of Al thin film is investigated by using molecular dynamics simulation. The result shows that crack experiences the healing process including two distinct phases. In addition, crack can decrease the yield strength and the maximum imprinting force of thin film. The simulation result also indicates that when the WWR (crack width to mold bottom width ratio) of models are 21.4% and 35.4%, there is an obvious hardening effect with a rapid growth of the imprinting force during the crack healing process. Moreover, the force fluctuates around the large value in long term period of plastic stage. On the other hand, when the WWR of models are 49.8% and 63.9%, crack plays an important role in improving the integrity of thin film and the formability of final nanopattern. The reason for this is that the imprinting mode on thin film changes from pressing to cutting.

  1. Electrical, optical, and electronic properties of Al:ZnO films in a wide doping range

    SciTech Connect

    Valenti, Ilaria; Valeri, Sergio; Perucchi, Andrea; Di Pietro, Paola; Lupi, Stefano; Torelli, Piero

    2015-10-28

    The combination of photoemission spectroscopies, infrared and UV-VIS absorption, and electric measurements has allowed to clarify the mechanisms governing the conductivity and the electronic properties of Al-doped ZnO (AZO) films in a wide doping range. The contribution of defect-related in-gap states to conduction has been excluded in optimally doped films (around 4 at. %). The appearance of gap states at high doping, the disappearance of occupied DOS at Fermi level, and the bands evolution complete the picture of electronic structure in AZO when doped above 4 at. %. In this situation, compensating defects deplete the conduction band and increase the electronic bandgap of the material. Electrical measurements and figure of merit determination confirm the high quality of the films obtained by magnetron sputtering, and thus allow to extend their properties to AZO films in general.

  2. A comparison of the performance of new screen-film and digital mammography systems

    NASA Astrophysics Data System (ADS)

    Monnin, P.; Gutierrez, D.; Castella, C.; Lepori, D.; Verdun, F. R.

    2006-03-01

    This work compares the detector performances of the recent Kodak Min-R EV 190/Min-R EV and current Kodak Min-R 2190/Min-R 2000 mammography screen-film combinations with the Kodak CR 850M system using the new EHR-M and standard HR plates. Basic image quality parameters (MTF, NNPS and DQE) were evaluated according to ISO 9236-3 conditions (i.e. 28 kV; Mo/Mo; HVL = 0.64 mm eq. Al) at an entrance air kerma level of 60 μGy. Compared with the Min-R 2000, the Kodak Min-R EV screen-film system has a higher contrast and an intrinsically lower noise level, leading to a better DQE. Due to a lower noise level, the new EHR-M plate improves the DQE of the CR system, in comparison with the use of the standard HR plate (30 % improvement) in a mammography cassette. Compared with the CR plates, screen-film systems still permit to resolve finer details and have a significantly higher DQE for all spatial frequencies.

  3. Current transport mechanisms in plasma-enhanced atomic layer deposited AlN thin films

    SciTech Connect

    Altuntas, Halit E-mail: biyikli@unam.bilkent.edu.tr; Ozgit-Akgun, Cagla; Donmez, Inci; Biyikli, Necmi E-mail: biyikli@unam.bilkent.edu.tr

    2015-04-21

    Here, we report on the current transport mechanisms in AlN thin films deposited at a low temperature (i.e., 200 °C) on p-type Si substrates by plasma-enhanced atomic layer deposition. Structural characterization of the deposited AlN was carried out using grazing-incidence X-ray diffraction, revealing polycrystalline films with a wurtzite (hexagonal) structure. Al/AlN/ p-Si metal-insulator-semiconductor (MIS) capacitor structures were fabricated and investigated under negative bias by performing current-voltage measurements. As a function of the applied electric field, different types of current transport mechanisms were observed; i.e., ohmic conduction (15.2–21.5 MV/m), Schottky emission (23.6–39.5 MV/m), Frenkel-Poole emission (63.8–211.8 MV/m), trap-assisted tunneling (226–280 MV/m), and Fowler-Nordheim tunneling (290–447 MV/m). Electrical properties of the insulating AlN layer and the fabricated Al/AlN/p-Si MIS capacitor structure such as dielectric constant, flat-band voltage, effective charge density, and threshold voltage were also determined from the capacitance-voltage measurements.

  4. Characterization and Fabrication of ZnO Nanowires Grown on AlN Thin Film

    SciTech Connect

    Yousefi, Ramin; Kamaluddin, Burhanuddin; Ghoranneviss, Mahmood; Hajakbari, Fatemeh

    2009-07-07

    In this paper, we report ZnO nanowires grown on AlN thin film deposited on glass as substrate by physical vapour deposition. The temperature of substrates was kept between 600 deg. C and 500 deg. C during the growth. The typical average diameters of the obtained nanowires on substrate at 600 deg. C and 500 deg. C was about 57 nm and 22 nm, respectively with several micrometers in lengths. X-ray diffraction and Auger spectroscopy results showed Al diffused from AlN thin film into ZnO nanowires for sample at high temperature zone. In the photoluminescence spectra two emission bands appeared, one related to ultraviolet emission with a strong peak at 380-382 nm, and another related to deep level emission with a weak peak at 510 nm.

  5. Raman scattering measurements of phonon anharmonicity in CuAlO2 thin films

    NASA Astrophysics Data System (ADS)

    Singh, Manoj K.; Dussan, S.; Sharma, Ganpat L.; Katiyar, Ram S.

    2008-12-01

    CuAlO2 thin films were grown on single crystalline sapphire substrates with c-axis orientation by rf sputtering method. The x-ray diffraction data indicate the formation of delafossite structure and tend to be oriented along (001). Temperature dependent Raman spectra of CuAlO2 thin films were measured from 80 to 1273 K, and we observed two optical modes at Eg (˜418 cm-1) and A1g(˜767 cm-1) showing anomalous frequency and linewidth shifts with temperature, which were interpreted as an experimental evidence of combined effect of lattice expansion and anharmonic phonon-phonon interaction in CuAlO2. At high temperature, polaronic state and change in effective mass due to lattice expansion also affect the frequency shift and the linewidth of the observed Raman modes.

  6. Magnetization Dynamics Through Magnetoimpedance Effect in Isotropic Co2FeAl/Au/Co2FeAl Full-Heusler Alloy Trilayer Films

    NASA Astrophysics Data System (ADS)

    Assolin Corrêa, Marcio; Montardo Escobar, Vivian; Trigueiro-Neto, Osvaldo; Bohn, Felipe; Daiane Sossmeier, Kelly; Gomes Bezerra, Claudionor; Chesman, Carlos; Pearson, John; Hoffmann, Axel

    2013-09-01

    We investigate the magnetization dynamics in low damping parameter α systems by measuring the magnetoimpedance effect over a wide range of frequencies, from 0.1 to 3.0 GHz, in Co2FeAl/Au/Co2FeAl full-Heusler alloy trilayer films grown by magnetron sputtering on glass and MgO substrates. We show that the film produced on the glass substrate presents high magnetoimpedance performance, while that grown on the MgO substrate has low magnetoimpedance performance. Since both films are polycrystalline and have isotropic in-plane magnetic properties, we interpret the magnetoimpedance results in terms of the low damping parameter α and strain effects in the films. Thus, we verified that our films present good magnetoimpedance performance and showed that high performance can be achieved even in films with isotropic in-plane magnetic properties, since they present low damping parameter α.

  7. Magnetic damping and spin polarization of highly ordered B2 Co2FeAl thin films

    NASA Astrophysics Data System (ADS)

    Cui, Yishen; Lu, Jiwei; Schäfer, Sebastian; Khodadadi, Behrouz; Mewes, Tim; Osofsky, Mike; Wolf, Stuart A.

    2014-08-01

    Epitaxial Co2FeAl films were synthesized using the Biased Target Ion Beam Deposition technique. Post annealing yielded Co2FeAl films with an improved B2 chemical ordering. Both the magnetization and the Gilbert damping parameter were reduced with increased B2 ordering. A low damping parameter, ˜0.002, was attained in B2 ordered Co2FeAl films without the presence of the L21 Heusler phase, which suggests that the B2 structure is sufficient for providing low damping in Co2FeAl. The spin polarization was ˜53% and was insensitive to the chemical ordering.

  8. A comparison of mechanical properties between Al and Al3Mg

    NASA Astrophysics Data System (ADS)

    Yang, Rong; Tang, Bin; Gao, Tao

    2016-11-01

    On the basis of first principles calculations, we have calculated the elastic properties, stress-strain relations, ideal tensile strengths, ideal shear strengths, and the ideal compressed strengths of Al and Al3Mg. The stress-strain relations of Al3Mg are strikingly similar to those of Al, indicating that the crystal structure appears to be more important than the identity of the individual atoms during uniaxial deformation. Al3Mg is found to have larger moduli and higher strengths than Al but less ductile than Al. So Al3Mg is expected to be a harder material, consistent with its exploitation in Al precipitate-hardening mechanisms. The calculated elastic properties, tensile strengths and shear strengths of Al are consistent with experimental values or previous theoretical results. We also use another method (molecular dynamics (MD) simulations) to recalculate elastic constants, ideal tensile and compressed strength of Al3Mg for checking and comparing. We find that the results obtained by the two methods agree well with each other. The failure modes under uniaxial <100> tension are also explored for Al and Al3Mg. Our calculations confirm that Al fail by shear and predict that Al3Mg also fail by shear.

  9. Effect of Hydrogen on the Properties of RF-Magnetron Sputtering ZnO:Al Films as an Alternative to Commercially Available TCO Films

    NASA Astrophysics Data System (ADS)

    Das, Rajesh; Sekhar Das, Himadri

    2016-09-01

    Transparent conducting ZnO:Al thin films with lowest electrical resistivity and sheet resistance 3.89 × 10-4 Ω cm and 7.65 Ω/□ were developed by RF-magnetron sputtering using Ar + H2 as sputtering gas at 250 °C. ZnO:Al films are highly polycrystalline hexagonal wurtzite, (002) oriented and grain size are around 30 nm. The highest carrier concentration and mobility of our lab deposited ZnO:Al films are (~1021 cm-3) and 8.93 cm2/V s respectively. RF-sputtered ZnO:Al films are self textured and surface roughness of ZnO:Al films varies with H2 dilution ratio and ultimately affects on Haze factor. Haze factor varies from 36 to 42.8 for introducing different gas ambient during deposition. Blue and green photoluminescence emission peaks are observed at 432 nm (2.87 eV) and 541.5 nm (2.29 eV) respectively in H2 gas deposited ZnO:Al films. Both ZnO:Al and commercial TCO films have almost similar electrical properties except mobility and visible optical transmittance maxima, but still show 30 % higher optical transmittance at longer wavelength region of solar spectrum and U-type surface morphology. Systematic analysis of different materials properties, elemental analysis and surface texture of non-stoichiometric ZnO:Al films are studied and latest status on electrical, optical as well as morphological studies of magnetron sputtered ZnO:Al films are reported. Finally, the possible solutions for expected outcomes are discussed.

  10. Effects of Al concentration on microstructural characteristics and electrical properties of Al-doped ZnO thin films on Si substrates by atomic layer deposition.

    PubMed

    Lee, Ju Ho; Lee, Jae-Won; Hwang, Sooyeon; Kim, Sang Yun; Cho, Hyung Koun; Lee, Jeong Yong; Park, Jin-Seong

    2012-07-01

    Al-doped ZnO (AZO) thin films with various Al concentrations were synthesized on Si(001) substrates with native oxide layers by atomic layer deposition process. The effects of the Al concentration on the microstructural characteristics of the AZO thin films grown at 250 degrees C and the correlation between their microstructural characteristics and electrical properties of the AZO thin films were investigated by AFM, XRD, HRTEM and Hall measurements. The XRD and HRTEM results revealed that the crystallinity and electrical properties of the undoped ZnO thin films were enhanced by 2.48 at% Al doping. However, 12.62 at% Al doping induced the deterioration of their crystallinity and electrical properties due to the formation of nano-sized metallic Al clusters and randomly oriented ZnO-based nano-crystals. To enhance the electrical properties of the AZO thin films while maintaining their crystallinity and electrical properties, a moderate Al concentration has to be chosen under the solubility limit of Al in ZnO.

  11. Spontaneous lateral phase separation of AlInP during thin film growth and its effect on luminescence

    SciTech Connect

    Mukherjee, Kunal; Fitzgerald, Eugene A.; Norman, Andrew G.; Akey, Austin J.; Buonassisi, Tonio

    2015-09-21

    The occurrence of spontaneous lateral phase separation during thin film growth of Al{sub x}In{sub 1−x}P by metal-organic chemical vapor deposition was investigated using a combination of transmission electron microscopy and atom probe tomography to obtain a quantitative view of this phenomenon. An anisotropic and coherent composition modulation was observed in the nearly lattice-matched films deposited below 750 °C with a quasi-linear amplification with thickness that was inversely proportional to the growth temperature. The periodicity of the modulation increased exponentially with the growth temperature. A comparison of photoluminescence from phase separated and homogenous direct band gap Al{sub x}In{sub 1−x}P deposited on metamorphic In{sub y}Ga{sub 1−y}As graded buffers showed a lowering of peak-emission energy in accordance with the atom probe compositional characterization without any degradation in luminous intensity. Additionally, indications of carrier trapping in the low band gap regions were observed even at room-temperature. While some of these results are in qualitative agreement with theoretical models of kinetic instability in unstrained alloy growth in the literature, significant discrepancies remain.

  12. Superhard self-lubricating AlMgB14 films for microelectromechanical devices

    NASA Astrophysics Data System (ADS)

    Tian, Y.; Bastawros, A. F.; Lo, C. C. H.; Constant, A. P.; Russell, A. M.; Cook, B. A.

    2003-10-01

    Performance and reliability of microelectromechanical system (MEMS) components can be enhanced dramatically through the incorporation of protective thin-film coatings. Current-generation MEMS devices prepared by the lithographie-galvanoformung-abformung (LIGA) technique employ transition metals such as Ni, Cu, Fe, or alloys thereof, and hence lack stability in oxidizing, corrosive, and/or high-temperature environments. Fabrication of a superhard self-lubricating coating based on a ternary boride compound AlMgB14 described in this letter has great potential in protective coating technology for LIGA microdevices. Nanoindentation tests show that the hardness of AlMgB14 films prepared by pulsed laser deposition ranges from 45 GPa to 51 GPa, when deposited at room temperature and 573 K, respectively. Extremely low friction coefficients of 0.04-0.05, which are thought to result from a self-lubricating effect, have also been confirmed by nanoscratch tests on the AlMgB14 films. Transmission electron microscopy studies show that the as-deposited films are amorphous, regardless of substrate temperature; however, analysis of Fourier transform infrared spectra suggests that the higher substrate temperature facilitates the formation of the B12 icosahedral framework, therefore leading to the higher hardness.

  13. Half-metallicity in highly L21-ordered CoFeCrAl thin films

    NASA Astrophysics Data System (ADS)

    Jin, Y.; Kharel, P.; Valloppilly, S. R.; Li, X.-Z.; Kim, D. R.; Zhao, G. J.; Chen, T. Y.; Choudhary, R.; Kashyap, A.; Skomski, R.; Sellmyer, D. J.

    2016-10-01

    The structural, magnetic, and electron-transport properties of Heusler-ordered CoFeCrAl thin films are investigated experimentally and theoretically. The films, sputtered onto MgO and having thicknesses of about 100 nm, exhibit virtually perfect single-crystalline epitaxy and a high degree of L21 chemical order. X-ray diffraction and transmission-electron microscopy show that the structure of the films is essentially of the L21 Heusler type. The films are ferrimagnetic, with a Curie temperature of about 390 K, and a net moment of 2 μB per formula unit. The room temperature resistivity is 175 μΩ cm; the carrier concentration and mobility determined from the low temperature (5 K) measurement are 1.2 × 1018 cm-3 and 33 cm2/V s, respectively. In contrast to the well-investigated Heusler alloys such as Co2(Cr1-xFex)Al, the CoFeCrAl system exhibits two main types of weak residual A2 disorder, namely, Co-Cr disorder and Fe-Cr disorder, the latter conserving half-metallicity. Point-contact Andreev reflection yields a lower bound for the spin polarization, 68% at 1.85 K, but our structural and magnetization analyses suggest that the spin polarization at the Fermi level is probably higher than 90%. The high resistivity, spin polarization, and Curie temperature are encouraging in the context of spin electronics.

  14. Photo-, cathodo-, and electroluminescence studies of sputter deposited AlN:Er thin films

    NASA Astrophysics Data System (ADS)

    Dimitrova, V. I.; Van Patten, P. G.; Richardson, H.; Kordesch, M. E.

    2001-05-01

    Green cathodoluminescence (CL), photoluminescence (PL) and electroluminescence (EL) have been obtained from Er-doped amorphous AlN thin films, 200 nm thick, prepared by rf magnetron sputtering. All films were activated by annealing at 750°C for 10 min in a nitrogen atmosphere. Three sharp bands at about 479, 538 and 559 nm corresponding to the 4F7/2→ 4I15/2, 2H11/2→ 4I15/2 and 4S3/2→ 4I15/2 transitions are observed. Fine structure is seen on the major transitions that does not change with temperature indicating that this structure is related to different local environments of the Er 3+ ion. The PL spectrum revealed sharp peaks from Er 3+ ions and a broad spectral profile that might be from defect states in the amorphous AlN. The results from EL measurements show that Er-doped amorphous AlN films can be used as a phosphor layer in alternating-current thin-film electroluminescent (ACTFEL) devices.

  15. Growth dynamics of reactive-sputtering-deposited AlN films

    SciTech Connect

    Auger, M.A.; Vazquez, L.; Sanchez, O.; Jergel, M.; Cuerno, R.; Castro, M.

    2005-06-15

    We have studied the surface kinetic roughening of AlN films grown on Si(100) substrates by dc reactive sputtering within the framework of the dynamic scaling theory. Films deposited under the same experimental conditions for different growth times were analyzed by atomic force microscopy and x-ray diffraction. The AlN films display a (002) preferred orientation. We have found two growth regimes with a crossover time of 36 min. In the first regime, the growth dynamics is unstable and the films present two types of textured domains, well textured and randomly oriented, respectively. In contrast, in the second regime the films are homogeneous and well textured, leading to a relative stabilization of the surface roughness characterized by a growth exponent {beta}=0.37{+-}0.03. In this regime a superrough scaling behavior is found with the following exponents: (i) Global exponents: roughness exponent {alpha}=1.2{+-}0.2 and {beta}=0.37{+-}0.03 and coarsening exponent 1/z=0.32{+-}0.05; (ii) local exponents: {alpha}{sub loc}=1, {beta}{sub loc}=0.32{+-}0.01. The differences between the growth modes are found to be related to the different main growth mechanisms dominating their growth dynamics: sticking anisotropy and shadowing, respectively.

  16. Optoelectronic and structural characteristics of Er-doped amorphous AlN films

    SciTech Connect

    Zanatta, A.R.; Ribeiro, C.T.M.; Jahn, U.

    2005-11-01

    This work reports on the optical, electronic, and structural properties of aluminum-nitrogen (AlN) films doped with Er. The films were deposited by conventional radio-frequency sputtering at 200 deg. C in an atmosphere of pure nitrogen. Their main characteristics have been investigated by experimental techniques such as optical transmission, photo- and cathodoluminescence, Raman scattering, and x-ray photoelectron spectroscopy. All films exhibit Er{sup 3+}-related optical emissions in the visible and infrared regions, which are considerably enhanced after thermal annealing and on measurements at low temperature. Moreover, Raman spectroscopy indicates that the films remain amorphous even after thermal treatment at 900 deg. C. Based on the composition and on the structural and luminescent properties of these Er-doped amorphous AlN films it was possible to conclude that energy excitation of Er{sup 3+} ions takes place according to different routes when electrons or photons are used. In the former case, energy is transferred from the amorphous host to the Er{sup 3+} ions by carrier-mediated processes. As a result, relatively strong Er{sup 3+}-related optical transitions can be observed in the {approx}400-1600 nm range. Excitation with 488.0 nm photons also produces visible and infrared Er{sup 3+}-related luminescence, but most of the optical excitation occurs through direct excitation of the {sup 4}F{sub 7/2} level of Er{sup 3+}. Finally, the role played by nitrogen atoms and thermal treatments on the achievement of light emission from the present AlN films is discussed and compared with the existing literature.

  17. Microstructure and nonbasal-plane growth of epitaxial Ti2AlN thin films

    NASA Astrophysics Data System (ADS)

    Beckers, M.; Schell, N.; Martins, R. M. S.; Mücklich, A.; Möller, W.; Hultman, L.

    2006-02-01

    Thin films of the Mn+1AXn (MAX) phase (M: early transition metal; A:A-group element; X: C and/or N; n=1-3) Ti2AlN were epitaxially grown onto single-crystal MgO(111) and MgO(100) substrates by dc reactive magnetron cosputtering from Ti and Al targets in an Ar/N2 gas mixture at a temperature of 690 °C. To promote the nucleation of the MAX phase, a fcc (Ti0.63Al0.37)N seed layer was deposited before changing to Ti2AlN growth parameters. The nucleation processes have been studied by real-time in situ specular x-ray reflectivity. Independent of substrate orientation, the seed layer shows no roughening until its final thickness of approximately 100 A˚, indicating pseudomorphic layer-by-layer growth. The MAX phase shows heteroepitaxial layer-by-layer growth on MgO(111), with increased surface roughening up to approximately 200 A˚, whereas on MgO(100) the growth mode changes to Volmer-Weber-type already after three monolayers. X-ray scattering in Bragg-Brentano geometry of the final, approximately 1000 A˚ thick, Ti2AlN film reveals lattice parameters of c=13.463 A˚ and a=2.976 A˚ on the MgO(111) substrate and c=13.740 A˚ and a=2.224 A˚ on the MgO(100) substrate. From pole figure measurements the orientational relationship between film and substrate lattice was determined to be MgO{111}<110>//Ti2AlN{1012}<1210>, regardless of the substrate orientation. This tilted, nonbasal-plane growth leads to a threefold grain orientation of Ti2AlN along the MgO<110> directions and a polycrystalline morphology confirmed by cross-sectional transmission electron microscopy. The growth can be assumed to take place in a lateral step-flow mode, i.e., emerging low surface free-energy (0001) planes, on which arriving atoms can diffuse until finding a step where they are bound to A facets. This growth process is irrespective of orientational relationship between substrate and film. However, in the present low-temperature case the partitioning of arriving Al and Ti atoms during

  18. Effect of stacking sequence on crystallization in Al/a-Ge bilayer thin films

    SciTech Connect

    Zhang, Tianwei; Zhang, Weilin; Ma, Fei E-mail: kwxu@mail.xjtu.edu.cn; Huang, Yuhong; Xu, Kewei E-mail: kwxu@mail.xjtu.edu.cn

    2014-05-15

    Two types of bilayer thin films with different deposition sequences, i.e., amorphous Ge under Al (a-Ge/Al) and the inverse (Al/a-Ge), were prepared by magnetron sputtering at room temperature. In-situ and ex-situ thermal annealing were compared to study the effect of the stacking sequence on crystallization of amorphous Ge. Although metal-induced crystallization occurred in both cases at low temperature, layer exchange was observed only in a-Ge/Al. In fact, compressive stress could usually be produced when Ge atoms diffused into Al grain boundaries and crystallized there. In the a-Ge/Al system, the stress could be released through diffusion of Al atoms onto the surface and formation of hillocks. Thus, grain boundary (GB) mediated crystallization was dominant in the whole process and layer exchange occurred. However, in the Al/a-Ge system, it was difficult for stress to be relaxed because the Ge sublayer and substrate restricted the diffusion of Al atoms. GB-mediated crystallization was, therefore, considerably suppressed and interface-mediated crystallization was preferred without layer exchange. This leads to distinct morphologies of dendrites in the two systems.

  19. Resonant indirect excitation of Gd{sup 3+} in AlN thin films

    SciTech Connect

    Ishizu, Yuta; Tsuji, Kazuma; Harada, Yukihiro; Kita, Takashi; Chigi, Yoshitaka; Nishimoto, Tetsuro; Tanaka, Hiroyuki; Kobayashi, Mikihiro; Ishihara, Tsuguo; Izumi, Hirokazu

    2014-05-07

    We studied the efficient indirect excitation of Gd{sup 3+} ions in AlN thin films. C-axis oriented polycrystalline thin films of Al{sub 0.997}Gd{sub 0.003}N/AlN were grown on fused silica substrates using a reactive radio-frequency magnetron sputtering technique. The intra-orbital electron transition in Gd{sup 3+} showed a narrow luminescence line at 3.9 eV. The photoluminescence (PL) excitation (PLE) spectrum exhibited a peak originating from efficient indirect energy transfer from the band edge of AlN to Gd{sup 3+} ions. The PLE peak shifted and the PL intensity showed a dramatic change when the AlN band gap was varied by changing the temperature. Energy scanning performed by changing the band-gap energy of AlN with temperature revealed several resonant channels of energy transfer into the higher excited states of Gd{sup 3+}.

  20. Magnetic and transport properties of Mn{sub 2}CoAl oriented films

    SciTech Connect

    Jamer, Michelle E.; Assaf, Badih A.; Devakul, Trithep; Heiman, Don

    2013-09-30

    The structure, magnetic, and transport properties of thin films of the Heusler ferrimagnet Mn{sub 2}CoAl have been investigated for properties related to spin gapless semiconductors. Oriented films were grown by molecular beam epitaxy on GaAs substrates and the structure was found to transform from tetragonal to cubic for increasing annealing temperature. The anomalous Hall resistivity is found to be proportional to the square of the longitudinal resistivity and magnetization expected for a topological Berry curvature origin. A delicate balance of the spin-polarized carrier type when coupled with voltage gate-tuning could significantly impact advanced electronic devices.

  1. Enhanced Barrier Performance of Engineered Paper by Atomic Layer Deposited Al2O3 Thin Films.

    PubMed

    Mirvakili, Mehr Negar; Van Bui, Hao; van Ommen, J Ruud; Hatzikiriakos, Savvas G; Englezos, Peter

    2016-06-01

    Surface modification of cellulosic paper is demonstrated by employing plasma assisted atomic layer deposition. Al2O3 thin films are deposited on paper substrates, prepared with different fiber sizes, to improve their barrier properties. Thus, a hydrophobic paper is created with low gas permeability by combining the control of fiber size (and structure) with atomic layer deposition of Al2O3 films. Papers are prepared using Kraft softwood pulp and thermomechanical pulp. The cellulosic wood fibers are refined to obtain fibers with smaller length and diameter. Films of Al2O3, 10, 25, and 45 nm in thickness, are deposited on the paper surface. The work demonstrates that coating of papers prepared with long fibers efficiently reduces wettability with slight enhancement in gas permeability, whereas on shorter fibers, it results in significantly lower gas permeability. Wettability studies on Al2O3 deposited paper substrates have shown water wicking and absorption over time only in papers prepared with highly refined fibers. It is also shown that there is a certain fiber size at which the gas permeability assumes its minimum value, and further decrease in fiber size will reverse the effect on gas permeability.

  2. Enhanced Barrier Performance of Engineered Paper by Atomic Layer Deposited Al2O3 Thin Films.

    PubMed

    Mirvakili, Mehr Negar; Van Bui, Hao; van Ommen, J Ruud; Hatzikiriakos, Savvas G; Englezos, Peter

    2016-06-01

    Surface modification of cellulosic paper is demonstrated by employing plasma assisted atomic layer deposition. Al2O3 thin films are deposited on paper substrates, prepared with different fiber sizes, to improve their barrier properties. Thus, a hydrophobic paper is created with low gas permeability by combining the control of fiber size (and structure) with atomic layer deposition of Al2O3 films. Papers are prepared using Kraft softwood pulp and thermomechanical pulp. The cellulosic wood fibers are refined to obtain fibers with smaller length and diameter. Films of Al2O3, 10, 25, and 45 nm in thickness, are deposited on the paper surface. The work demonstrates that coating of papers prepared with long fibers efficiently reduces wettability with slight enhancement in gas permeability, whereas on shorter fibers, it results in significantly lower gas permeability. Wettability studies on Al2O3 deposited paper substrates have shown water wicking and absorption over time only in papers prepared with highly refined fibers. It is also shown that there is a certain fiber size at which the gas permeability assumes its minimum value, and further decrease in fiber size will reverse the effect on gas permeability. PMID:27165172

  3. Interaction of oxygen with samarium on Al{sub 2}O{sub 3} thin film grown on Ni{sub 3}Al(111)

    SciTech Connect

    Cheng, Dingling; Xu, Qian E-mail: jfzhu@ustc.edu.cn; Han, Yong; Ye, Yifan; Pan, Haibin; Zhu, Junfa E-mail: jfzhu@ustc.edu.cn

    2014-03-07

    The interaction between oxygen and samarium (Sm) on the well-ordered thin Al{sub 2}O{sub 3} film grown on Ni{sub 3}Al(111) has been investigated by X-ray photoelectron spectroscopy and synchrotron radiation photoemission spectroscopy. At Sm coverage higher than one monolayer, exposure of oxygen to the Sm films at room temperature leads to the formation of both samarium peroxide (O{sub 2}{sup 2−}) states and regular samarium oxide (O{sup 2−}) states. By contrast, when exposing O{sub 2} to Sm film less than one monolayer on Al{sub 2}O{sub 3}, no O{sub 2}{sup 2−} can be observed. Upon heating to higher temperatures, these metastable O{sub 2}{sup 2−} states dissociate, supplying active O atoms which can diffuse through the Al{sub 2}O{sub 3} thin film to further oxidize the underlying Ni{sub 3}Al(111) substrate, leading to the significant increase of the Al{sub 2}O{sub 3} thin film thickness. Therefore, it can be concluded that Sm, presumably in its peroxide form, acts as a catalyst for the further oxidation of the Ni{sub 3}Al substrate by supplying the active oxygen species at elevated temperatures.

  4. Zr, ZrN and Zr/Al Thin Films Deposition Using Arc Evaporation and Annealing

    NASA Astrophysics Data System (ADS)

    Čyvienė, J.; Dudonis, J.

    2008-10-01

    The chemical reactions are widely used for the layers of different composition formation. However, synthesis mechanism is a complicated process in thin films/layers system, and is not completely studied. The purpose of this paper was to analyze the kinetics of chemical compounds in reaction, to produce ZrO2 thin films using arc evaporation and annealing (post-deposition), and to analyze them. The pure zirconium (Zr) and zirconium nitride (ZrN) were deposited using arc evaporation. 10% mol of aluminum was evaporated on a few Zr films. All deposited films were annealed in the air atmosphere gradually changing the temperature from 400ºC to 1100ºC in order to produce ZrO2 films. The formation processes of the new phase were studied. Activation energy of the reactions was calculated. Structural properties were measured using X-ray diffraction, optical properties - using ellipsometry. Tetragonal phase of ZrO2 was obtained in the annealing process of ZrO2/Al thin film in the air atmosphere of 800ºC.

  5. Thermal boundary conductance between Al films and GaN nanowires investigated with molecular dynamics.

    PubMed

    Zhou, Xiao-Wang; Jones, Reese E; Hopkins, Patrick E; Beechem, Thomas E

    2014-05-28

    GaN nanowires are being pursued for optoelectronic and high-power applications. In either use, increases in operating temperature reduce both performance and reliability making it imperative to minimize thermal resistances. Since interfaces significantly influence the thermal response of nanosystems, the thermal boundary resistance between GaN nanowires and metal contacts has major significance. In response, we have performed systematic molecular dynamics simulations to study the thermal boundary conductance between GaN nanowires and Al films as a function of nanowire dimensions, packing density, and the depth the nanowire is embedded into the metal contact. At low packing densities, the apparent Kapitza conductance between GaN nanowires and an aluminum film is shown to be larger than when contact is made between films of these same materials. This enhancement decreases toward the film-film limit, however, as the packing density increases. For densely packed nanowires, maximizing the Kapitza conductance can be achieved by embedding the nanowires into the films, as the conductance is found to be proportional to the total contact area.

  6. Nano porous Al2O3-TiO2 thin film based humidity sensor prepared by spray pyrolysis technique

    NASA Astrophysics Data System (ADS)

    Chandrashekara, H. D.; Angadi, Basavaraj; Ravikiran, Y. T.; Poornima, P.; Shashidhar, R.; Murthy, L. C. S.

    2016-05-01

    The nano porous surface structured TiO2 and Al2O3-TiO2 thin films were prepared using spray pyrolysis technique at 350°C. The XRD pattern of Al2O3-TiO2 film shows anatase phase and mixed phase of Al2TiO5. The surface morphology of films show a uniformly distributed nano porous structure. The elemental analysis through EDAX shows good stoichiometry. The sensitivity for humidity sensing were determined for both films of TiO2 and Al2O3-TiO2 and corresponding values are found to be 74.2% and 84.02%, this result reveal that Al2O3-TiO2 films shows higher sensing percent than the TiO2 due to the nano porous surface nature. The Al2O3-TiO2 film shows fast response time and long recovery time than the TiO2 film, this may be due to the meso-porous morphology of these films.

  7. Structural and electrical properties of ternary Ru-AlN thin films prepared by plasma-enhanced atomic layer deposition

    SciTech Connect

    Shin, Yu-Ri; Kwack, Won-Sub; Park, Yun Chang; Kim, Jin-Hyock; Shin, Seung-Yong; Moon, Kyoung Il; Lee, Hyung-Woo; Kwon, Se-Hun

    2012-03-15

    Highlights: Black-Right-Pointing-Pointer Ru-AlN thin films were grown by plasma-enhanced atomic layer deposition (PEALD). Black-Right-Pointing-Pointer Structural properties were systematically investigated by XRD, BF-STEM and EDX. Black-Right-Pointing-Pointer A drastic decrease in resistivity was due to the microstructural change of the films. -- Abstract: Ruthenium-aluminum-nitride (Ru-AlN) thin films were grown by plasma-enhanced atomic layer deposition (PEALD) at 300 Degree-Sign C. The Ru intermixing ratio of Ru-AlN thin films was controlled by the number of Ru unit cycles, while the number of AlN unit cycles was fixed to one cycle. The electrical resistivity of Ru-AlN thin film decreased with increasing the Ru intermixing ratio, but a drastic decrease in electrical resistivity was observed when the Ru intermixing ratio was around 0.58-0.78. Bright-field scanning transmission electron microscope (BF-STEM) and energy-dispersive X-ray spectroscopy (EDX) element mapping analysis revealed that the electrical resistivity of Ru-AlN thin film was strongly dependent on the microstructures as well as on the Ru intermixing ratio. Although the electrical resistivity of Ru-AlN thin films decreased with increasing the Ru intermixing ratio, a drastic decrease in electrical resistivity occurred where the electrical paths formed as a result of the coalescence of Ru nanocrystals.

  8. Structural and mechanical properties of Al-C-N films deposited at room temperature by plasma focus device

    NASA Astrophysics Data System (ADS)

    Z, A. Umar; R, Ahmad; R, S. Rawat; M, A. Baig; J, Siddiqui; T, Hussain

    2016-07-01

    The Al-C-N films are deposited on Si substrates by using a dense plasma focus (DPF) device with aluminum fitted central electrode (anode) and by operating the device with CH4/N2 gas admixture ratio of 1:1. XRD results verify the crystalline AlN (111) and Al3CON (110) phase formation of the films deposited using multiple shots. The elemental compositions as well as chemical states of the deposited Al-C-N films are studied using XPS analysis, which affirm Al-N, C-C, and C-N bonding. The FESEM analysis reveals that the deposited films are composed of nanoparticles and nanoparticle agglomerates. The size of the agglomerates increases at a higher number of focus deposition shots for multiple shot depositions. Nanoindentation results reveal the variation in mechanical properties (nanohardness and elastic modulus) of Al-C-N films deposited with multiple shots. The highest values of nanohardness and elastic modulus are found to be about 11 and 185 GPa, respectively, for the film deposited with 30 focus deposition shots. The mechanical properties of the films deposited using multiple shots are related to the Al content and C-N bonding.

  9. Investigation of thermal atomic layer deposited TiAlX (X = N or C) film as metal gate

    NASA Astrophysics Data System (ADS)

    Xiang, Jinjuan; Zhang, Yanbo; Li, Tingting; Wang, Xiaolei; Gao, Jianfeng; Yin, Huaxiang; Li, Junfeng; Wang, Wenwu; Ding, Yuqiang; Xu, Chongying; Zhao, Chao

    2016-08-01

    TiAlX (X = N or C) films are developed by thermal atomic layer deposition (ALD) technique as metal gate. The TiAlX films are deposited by using four different combinations of precursors: A: TiCl4-NH3-TMA-NH3, B: TiCl4-TMA-NH3, C: TiCl4-NH3-TMA and D: TiCl4-TMA. The physical characteristics of the TiAlX films such as chemical composition, growth rate, resistivity and surface roughness are estimated by X-ray photoemission spectroscopy, scanning electron microscope, four point probe method and atomic force microscopy respectively. Additionally, the electrical characteristics of the TiAlX films are investigated by using metal-oxide-semiconductor (MOS) capacitor structure. It is shown that NH3 presence in the reaction makes the film more like TiAlN(C) while NH3 absence makes the film more like TiAlC. The TiAlC film deposited by TiCl4-TMA has effective work function close to mid-gap of Si, which is rather potential for low power FinFET device application.

  10. Characteristics of the Energetic Igniters Through Integrating Al/NiO Nanolaminates on Cr Film Bridge

    NASA Astrophysics Data System (ADS)

    Yan, YiChao; Shi, Wei; Jiang, HongChuan; Xiong, Jie; Zhang, WanLi; Li, Yanrong

    2015-12-01

    The energetic igniters through integrating Al/NiO nanolaminates on Cr film bridges have been investigated in this study. The microstructures demonstrate well-defined geometry and sharp interfaces. The depth profiles of the X-ray photoelectron spectroscopy of Al/NiO nanolaminates annealed at 550 °C with a bilayer thickness of 250 nm show that the interdiffusion between the Al layer and NiO layer has happened and the annealing temperature cannot provide enough energy to make the diffusion process much more complete. The electrical explosion characteristics employing a capacitor discharge firing set at the optimized charging voltage of 40 V show that the flame duration time is about 700 μs, and an excellent explosion performance is obtained for (Al/NiO)n/Cr igniters with a bilayer thickness of 1000 nm.

  11. Luminescent properties of Al2O3:Ce single crystalline films under synchrotron radiation excitation

    NASA Astrophysics Data System (ADS)

    Zorenko, Yu.; Zorenko, T.; Gorbenko, V.; Savchyn, V.; Voznyak, T.; Fabisiak, K.; Zhusupkalieva, G.; Fedorov, A.

    2016-09-01

    The paper is dedicated to study the luminescent and scintillation properties of the Al2O3:Ce single crystalline films (SCF) grown by LPE method onto saphire substrates from PbO based flux. The structural quality of SCF samples was investigated by XRD method. For characterization of luminescent properties of Al2O3:Ce SCFs the cathodoluminescence spectra, scintillation light yield (LY) and decay kinetics under excitation by α-particles of Pu239 source were used. We have found that the scintillation LY of Al2O3:Ce SCF samples is relatively large and can reach up to 50% of the value realized in the reference YAG:Ce SCF. Using the synchrotron radiation excitation in the 3.7-25 eV range at 10 K we have also determined the basic parameters of the Ce3+ luminescence in Al2O3 host.

  12. Orientation of the nanocrystallites in AlN thin film determined by FTIR spectroscopy

    NASA Astrophysics Data System (ADS)

    Antonova, K.; Szekeres, A.; Duta, L.; Stan, GE; Mihailescu, N.; Mihailescu, IN

    2016-02-01

    Aluminum Nitride (AlN) films were deposited at 450°C in nitrogen ambient at a pressure of 0.1 Pa and at a laser incident fluence of ∼3 J/cm2 and pulse repetition rate of 40 Hz. Grazing Incidence X-ray Diffraction patterns evidenced the presence of nanocrystallites in the amorphous AlN matrix. In the FTIR spectra the characteristic Reststrahlen band of AlN crystal with a hexagonal lattice is observed but it is quite broadened (950-550 cm-1). The angular dependence of the reflectance spectra in p-polarised incidence radiation demonstrates the sensitivity of the A1LO phonon mode of the AlN nanocrystallites to their orientation toward the normal to the substrate surface. With decrease of the incidence beam angle the intensity of the A1LO phonon mode diminishes and softening of the resonance frequency occurs.

  13. Co2FeAl films with perpendicular magnetic anisotropy in multilayer structure

    NASA Astrophysics Data System (ADS)

    Li, X. Q.; Xu, X. G.; Yin, S. Q.; Zhang, D. L.; Miao, J.; Jiang, Y.

    2011-01-01

    We have fabricated Co2FeAl (CFA) films with perpendicular magnetic anisotropy (PMA) in a (Co2FeAl/Ni)6 multilayer structure. The effects of underlayer Cu thickness (tCu), Co2FeAl thickness (tCFA) and Ni thickness (tNi) on the magnetic properties have been studied. The PMA is realized with a large anisotropy energy density K = 3.7×106 ergs/cm3, a high squareness Mr/Ms = 1 and a small perpendicular coercivity Hc = 60 Oe, while tCu, tCFA and tNi are 9 nm, 0.2 nm and 0.6 nm respectively. The PMA remains after 300 °C annealing, which demonstrates better thermal stability of the (Co2FeAl/Ni)6 multilayer than that of (Co/Ni)n.

  14. Thermal durability of AZO/Ag(Al)/AZO transparent conductive films

    NASA Astrophysics Data System (ADS)

    Sugimoto, Yukiko; Igarashi, Kanae; Shirasaki, Shinya; Kikuchi, Akihiko

    2016-04-01

    Effects of Al doping on surface morphology, sheet resistance, optical transmission spectra, and thermal durability of a thin Ag layer and AZO/Ag/AZO dielectric/metal/dielectric (DMD) transparent conductive films (TCFs) were investigated. The 1.7 at. % Al doping suppressed the initial island growth of a thin Ag layer and the plasmon resonant absorption dip in the optical transmission spectra. The threshold thickness of percolation conductivity was reduced from 9-10 (pure Al layer) to 5-6 nm (1.7 at. % Al-doped Ag layer). Al doping in the Ag layer improved the thermal durability of AZO/Ag/AZO-DMD TCFs. The threshold temperature for Ag void formation increased from 400 °C (DMD with pure Ag layer) to 600 °C (DMD with a 10.5 at. % Al-doped Ag layer). The optimum annealing temperature increased from 300 °C (DMD with a pure Ag layer) to 500 °C (DMD with a 10.5 at. % Al-doped Ag layer). Maximum figures of merit (FOM) were 0.5 × 10-2 and 1.1 × 10-2 Ω-1 for the DMD with a pure Ag layer and that with a 10.5 at. % Al-doped Ag layer, respectively.

  15. Oxidation behavior of arc evaporated Al-Cr-Si-N thin films

    SciTech Connect

    Tritremmel, Christian; Daniel, Rostislav; Mitterer, Christian; Mayrhofer, Paul H.; Lechthaler, Markus; Polcik, Peter

    2012-11-15

    The impact of Al and Si on the oxidation behavior of Al-Cr-(Si)-N thin films synthesized by arc evaporation of powder metallurgically prepared Al{sub x}Cr{sub 1-x} targets with x = Al/(Al + Cr) of 0.5, 0.6, and 0.7 and (Al{sub 0.5}Cr{sub 0.5}){sub 1-z}Si{sub z} targets with Si contents of z = 0.05, 0.1, and 0.2 in N{sub 2} atmosphere was studied in detail by means of differential scanning calorimetry, thermogravimetric analysis (TGA), x-ray diffraction, and Raman spectroscopy. Dynamical measurements in synthetic air (up to 1440 Degree-Sign C) revealed the highest onset temperature of pronounced oxidation for nitride coatings prepared from the Al{sub 0.4}Cr{sub 0.4}Si{sub 0.2} target. Isothermal TGA at 1100, 1200, 1250, and 1300 Degree-Sign C highlight the pronounced improvement of the oxidation resistance of Al{sub x}Cr{sub 1-x}N coatings by the addition of Si. The results show that Si promotes the formation of a dense coating morphology as well as a dense oxide scale when exposed to air.

  16. Thermal conductivity of PVD TiAlN films using pulsed photothermal reflectance technique

    NASA Astrophysics Data System (ADS)

    Ding, Xing-Zhao; Samani, M. K.; Chen, George

    2010-11-01

    In the present work, we have measured thermal-conductivity of industrial thin film TiAlN with a thickness of around 3 μm. These films are used in machining industry for cutting tools in order to increase their service life. A series of TiAlN coating with a different Al/Ti atomic ratio were deposited on Fe-304 stainless steel (AISI304) substrate by a lateral rotating cathode arc process. The samples were then coated with a 0.8 μm gold layer on top by magnetron sputtering. We present the thermal-conductivity measurement of these samples using pulsed photothermal reflectance (PPR) technique at room temperature. The thermal conductivity of the pure TiN coating is about 11.9 W/mK. A significant decrease in thermal conductivity was found with increasing Al/Ti atomic ratio. A minimum thermal conductivity of about 4.63 W/mK was obtained at the Al/Ti atomic ratio of around 0.72.

  17. Transparent Conducting ZnO Thin Films Doped with Al and Mo

    SciTech Connect

    Duenow, J.; Gessert, T.; Wood, D.; Young, D.; Coutts, T.

    2007-01-01

    Transparent conducting oxide (TCO) thin films are a vital part of photovoltaic cells, flat-panel displays, and electrochromic windows. ZnO-based TCOs, due to the relative abundance of Zn, may reduce production costs compared to those of the prevalent TCO In2O3:Sn (ITO). Undoped ZnO, ZnO:Al (0.5, 1, and 2 wt.% Al2O3), and ZnO:Mo (2 wt.%) films were deposited by RF magnetron sputtering. Controlled incorporation of H2 in the Ar sputtering ambient increased mobility of undoped ZnO by a factor of ~20 to 48 cm2V-1s-1. H2 also appears to catalyze ionization of dopants. This enabled lightly doped ZnO:Al to provide comparable conductivity to the standard 2 wt.%-doped ZnO:Al while demonstrating reduced infrared absorption. Mo was found to be an n-type dopant of ZnO, though material properties did not match those of ZnO:Al. Scattering mechanisms were investigated using temperature-dependent Hall measurements and the method of four coefficients. This abstract is subject to government rights.

  18. Epitaxial growth of higher transition-temperature VO2 films on AlN/Si

    NASA Astrophysics Data System (ADS)

    Slusar, Tetiana; Cho, Jin-Cheol; Kim, Bong-Jun; Yun, Sun Jin; Kim, Hyun-Tak

    2016-02-01

    We report the epitaxial growth and the mechanism of a higher temperature insulator-to-metal-transition (IMT) of vanadium dioxide (VO2) thin films synthesized on aluminum nitride (AlN)/Si (111) substrates by a pulsed-laser-deposition method; the IMT temperature is TIMT ≈ 350 K. X-ray diffractometer and high resolution transmission electron microscope data show that the epitaxial relationship of VO2 and AlN is VO2 (010) ‖ AlN (0001) with VO2 [101] ‖ AlN [ 2 1 ¯ 1 ¯ 0 ] zone axes, which results in a substrate-induced tensile strain along the in-plane a and c axes of the insulating monoclinic VO2. This strain stabilizes the insulating phase of VO2 and raises TIMT for 10 K higher than TIMT single crystal ≈ 340 K in a bulk VO2 single crystal. Near TIMT, a resistance change of about four orders is observed in a thick film of ˜130 nm. The VO2/AlN/Si heterostructures are promising for the development of integrated IMT-Si technology, including thermal switchers, transistors, and other applications.

  19. Properties of AlN films deposited by reactive ion-plasma sputtering

    SciTech Connect

    Bert, N. A.; Bondarev, A. D.; Zolotarev, V. V.; Kirilenko, D. A.; Lubyanskiy, Ya. V.; Lyutetskiy, A. V.; Slipchenko, S. O.; Petrunov, A. N.; Pikhtin, N. A. Ayusheva, K. R.; Arsentyev, I. N.; Tarasov, I. S.

    2015-10-15

    The properties of SiO{sub 2}, Al{sub 2}O{sub 3}, and AlN dielectric coatings deposited by reactive ion-plasma sputtering are studied. The refractive indices of the dielectric coatings are determined by optical ellipsometry. It is shown that aluminum nitride is the optimal material for achieving maximum illumination of the output mirror of a semiconductor laser. A crystalline phase with a hexagonal atomic lattice and oxygen content of up to 10 at % is found by transmission electron microscopy in the aluminum-nitride films. It is found that a decrease in the concentration of residual oxygen in the chamber of the reactive ion-plasma sputtering installation makes it possible to eliminate the appearance of vertical pores in the bulk of the aluminum-nitride film.

  20. The adsorption of water on Cu2O and Al2O3 thin films

    SciTech Connect

    Deng, Xingyi; Herranz, Tirma; Weis, Christoph; Bluhm, Hendrik; Salmeron, Miquel

    2008-06-27

    The initial stages of water condensation, approximately 6 molecular layers, on two oxide surfaces, Cu{sub 2}O and Al{sub 2}O{sub 3}, have been investigated by using ambient pressure X-ray photoelectron spectroscopy at relative humidity values (RH) from 0 to >90%. Water adsorbs first dissociatively on oxygen vacancies producing adsorbed hydroxyl groups in a stoichiometric reaction: O{sub lattic} + vacancies + H{sub 2}O = 2OH. The reaction is completed at {approx}1% RH and is followed by adsorption of molecular water. The thickness of the water film grows with increasing RH. The first monolayer is completed at {approx}15% RH on both oxides and is followed by a second layer at 35-40% RH. At 90% RH, about 6 layers of H{sub 2}O film have been formed on Al{sub 2}O{sub 3}.

  1. The in-plane anisotropic magnetic damping of ultrathin epitaxial Co2FeAl film

    NASA Astrophysics Data System (ADS)

    Qiao, Shuang; Yan, Wei; Nie, Shuaihua; Zhao, Jianhua; Zhang, Xinhui

    2015-08-01

    The in-plane orientation-dependent effective damping of ultrathin Co2FeAl film epitaxially grown on GaAs(001) substrate by molecular beam epitaxy (MBE) has been investigated by employing the time-resolved magneto-optical Kerr effect (TR-MOKE) measurements. It is found that the interface-induced uniaxial anisotropy is favorable for precession response and the anisotropy of precession frequency is mainly determined by this uniaxial anisotropy, while the magnetic relaxation time and damping factor exhibit the fourfold anisotropy at high-field regime. The field-independent anisotropic damping factor obtained at high fields indicates that the effective damping shows an intrinsic fourfold anisotropy for the epitaxial Co2FeAl thin films.

  2. Variations in the Nature of Metal Adsorption on Ultrathin Al(2)O(3) Films

    SciTech Connect

    Bogicevic, A.; Jennison, D.R.

    1998-11-24

    First-principles density-functional calculations are used to study metal adsorption (Li, K, Y, Nb, Ru, Pd, Pt, Cu, Ag, Au, and Al at 1/3-4 monolayer coverages) atop 5 ~ A1203 films on Al(Ill). The oxide-metal bond is ionic at Iow coverages but, with interesting exceptions, caused by polari@i ,~-cE!vED at high coverages where the overlayer is metallic. Binding trends are explained in terms of s'imp e concepts. Increasing overlayer thickness can cause the adsorbate-oxide interface structure to than . %lEc o ~ 1998 and while some metals wet, most do not.

  3. Electrochemical hydrogen storage in LaNi{sub 4.25}Al{sub 0.75} alloys: A comparative study between film and powder materials

    SciTech Connect

    Wang, Z.M. Li, Chi Ying Vanessa; Zhou Huaiying; Liu Shi; Chan, S.L.I.

    2008-04-15

    A comparison is made of the electrochemical and structural properties of LaNi{sub 4.25}Al{sub 0.75} alloys in thin film and powder forms. X-ray diffraction (XRD) revealed that both the LaNi{sub 4.25}Al{sub 0.75} thin film and powder materials are crystalline. Atomic force microscopy (AFM) and focused ion beam microscopy (FIB) proved that the film appeared to have a hill-like surface morphology, but was rather dense with a thickness of about 4.2 {mu}m. Simulated battery tests indicate that both exhibit similar electrochemical behavior, possibly due to their crystal structure, as it requires a primary activation to reach its fully active state. However it took a longer activation period for the film to be activated; an apparent initial decrease of charging voltage with cycle number was observed, as were abnormal discharge processes during activation. After 30 charge/discharge cycles, small needle-shaped aluminium oxide particles were formed on both the powder and film surfaces.

  4. Kinetics of phase formation in binary thin films: The Ni/Al case

    SciTech Connect

    Garcia, V.H.; Mors, P.M.; Scherer, C.

    2000-03-14

    The growth and/or dissociation of the intermetallic phases which are produced by interdiffusion in metallic thin film multilayers is studied by an approach based on a concentration-dependent diffusivity. No assumption is made on the a priori presence of seed layers of the phases that are expected to grow. Application to the Ni/Al system gives a good agreement with the experimental data reported in the literature.

  5. Microstructure control of Al-Cu films for improved electromigration resistance

    DOEpatents

    Frear, Darrel R.; Michael, Joseph R.; Romig, Jr., Alton D.

    1994-01-01

    A process for the forming of Al-Cu conductive thin films with reduced electromigration failures is useful, for example, in the metallization of integrated circuits. An improved formation process includes the heat treatment or annealing of the thin film conductor at a temperature within the range of from 200.degree. C. to 300.degree. C. for a time period between 10 minutes and 24 hours under a reducing atmosphere such as 15% H.sub.2 in N.sub.2 by volume. Al-Cu thin films annealed in the single phase region of a phase diagram, to temperatures between 200.degree. C. and 300.degree. C. have .theta.-phase Al.sub.2 Cu precipitates at the grain boundaries continuously become enriched in copper, due, it is theorized, to the formation of a thin coating of .theta.-phase precipitate at the grain boundary. Electromigration behavior of the aluminum is, thus, improved because the .theta.-phase precipitates with copper hinder aluminum diffusion along the grain boundaries. Electromigration, then, occurs mainly within the aluminum grains, a much slower process.

  6. Microstructure control of Al-Cu films for improved electromigration resistance

    DOEpatents

    Frear, D.R.; Michael, J.R.; Romig, A.D. Jr.

    1994-04-05

    A process for the forming of Al-Cu conductive thin films with reduced electromigration failures is useful, for example, in the metallization of integrated circuits. An improved formation process includes the heat treatment or annealing of the thin film conductor at a temperature within the range of from 200 C to 300 C for a time period between 10 minutes and 24 hours under a reducing atmosphere such as 15% H[sub 2] in N[sub 2] by volume. Al-Cu thin films annealed in the single phase region of a phase diagram, to temperatures between 200 C and 300 C have [theta]-phase Al[sub 2] Cu precipitates at the grain boundaries continuously become enriched in copper, due, it is theorized, to the formation of a thin coating of [theta]-phase precipitate at the grain boundary. Electromigration behavior of the aluminum is, thus, improved because the [theta]-phase precipitates with copper hinder aluminum diffusion along the grain boundaries. Electromigration, then, occurs mainly within the aluminum grains, a much slower process. 5 figures.

  7. Al-doped ZnO Nanostructured Thin Films: Density Functional Theory and Experiment

    NASA Astrophysics Data System (ADS)

    Sarma, J. V. N.; Rahman, A.; Jayaganthan, R.; Chowdhury, Rajib; Haranath, D.

    2015-06-01

    Nanostructured Al-doped ZnO (AZO) films are deposited on glass substrates by electroless deposition technique in the present work. AZO films with Al concentration from 1 at.% to 5 at.% are investigated for their structural and morphological properties by X-ray diffraction (XRD), and atomic force microscopy (AFM). An excellent homogeneity is achieved with average crystallite sizes of below 32 nm and a nearly constant root mean square (RMS) surface roughness between 1 nm and 3 nm, for various Al doping concentrations. These smooth and uniform films are characterized for their optical and photoluminescence (PL) properties. A higher value of average transparency between 79% and 92% in the wavelength range of 300-800 nm is achieved, and the PL intensity is found to be a strong function of doping. Density functional theory (DFT) calculations agree with the measured transmittance values, in addition to their predicted electronic structure. Moreover, time-resolved PL measurements indicate that the luminescence decay time decreases with increased doping concentration.

  8. Investigation of Al doping concentration effect on the structural and optical properties of the nanostructured CdO thin film

    NASA Astrophysics Data System (ADS)

    Gencer Imer, Arife

    2016-04-01

    Nanostructured aluminium (Al) doped cadmium oxide (CdO) films with highly electrical conductivity and optical transparency have been deposited for the first time on soda-lime glass substrates preheated at 250 °C by ultrasonic spray coating technique. The aluminium dopant content in the CdO film was changed from 0 to 5 at%. The influencing of Al doping on the structural, morphological, electrical and optical properties of the CdO nanostructured films has been investigated. Atomic force microscopy study showed the grain size of the films is an order of nanometers, and it decreases with increase in Al dopant content. All the films having cubic structure with a lattice parameter 4.69 Å were determined via X ray diffraction analysis. The optical band gap value of the films, obtained by optical absorption, was found to increase with Al doping. Electrical studies exhibited mobility, carrier concentration and resistivity of the film strongly dependent on the doping content. It has been evaluated that optical band gap, and grain size of the nanostructured CdO film could be modified by Al doping.

  9. Synthesis of Vertically-Aligned Carbon Nanotubes from Langmuir-Blodgett Films Deposited Fe Nanoparticles on Al2O3/Al/SiO2/Si Substrate.

    PubMed

    Takagiwa, Shota; Kanasugi, Osamu; Nakamura, Kentaro; Kushida, Masahito

    2016-04-01

    In order to apply vertically-aligned carbon nanotubes (VA-CNTs) to a new Pt supporting material of polymer electrolyte fuel cell (PEFC), number density and outer diameter of CNTs must be controlled independently. So, we employed Langmuir-Blodgett (LB) technique for depositing CNT growth catalysts. A Fe nanoparticle (NP) was used as a CNT growth catalyst. In this study, we tried to thicken VA-CNT carpet height and inhibit thermal aggregation of Fe NPs by using Al2O3/Al/SiO2/Si substrate. Fe NP LB films were deposited on three typed of substrates, SiO2/Si, as-deposited Al2O3/Al/SiO2/Si and annealed Al2O3/Al/SiO2/Si at 923 K in Ar atmosphere of 16 Pa. It is known that Al2O3/Al catalyzes hydrocarbon reforming, inhibits thermal aggregation of CNT growth catalysts and reduces CNT growth catalysts. It was found that annealed Al2O3/Al/SiO2/Si exerted three effects more strongly than as-deposited Al2O3/Al/SiO2/Si. VA-CNTs were synthesized from Fe NPs-C16 LB films by thermal chemical vapor deposition (CVD) method. As a result, at the distance between two nearest CNTs 28 nm or less, VA-CNT carpet height on annealed Al2O3/Al/SiO2/Si was about twice and ten times thicker than that on SiO2/Si and that on as-deposited Al2O3/Al/SiO2/Si, respectively. Moreover, distribution of CNT outer diameter on annealed Al2O3/Al/SiO2/Si was inhibited compared to that on SiO2/Si. These results suggest that since thermal aggregation of Fe NPs is inhibited, catalyst activity increases and distribution of Fe NP size is inhibited.

  10. Molecular beam epitaxy and characterization of thin Bi2Se3 films on Al2O3 (110)

    NASA Astrophysics Data System (ADS)

    Tabor, Phillip; Keenan, Cameron; Urazhdin, Sergei; Lederman, David

    2011-07-01

    The structural and electronic properties of thin Bi2Se3 films grown on Al2O3 (110) by molecular beam epitaxy are investigated. The epitaxial films grow in the Frank-van der Merwe mode and are c-axis oriented. They exhibit the highest crystallinity, the lowest carrier concentration, and optimal stoichiometry at a substrate temperature of 200 °C determined by the balance between surface kinetics and desorption of Se. The crystallinity of the films improves with increasing Se/Bi flux ratio. Our results enable studies of thin topological insulator films on inert, non-conducting substrates that allow optical access to both film surfaces.

  11. Highly (0001)-oriented Al-doped ZnO polycrystalline films on amorphous glass substrates

    NASA Astrophysics Data System (ADS)

    Nomoto, Junichi; Inaba, Katsuhiko; Osada, Minoru; Kobayashi, Shintaro; Makino, Hisao; Yamamoto, Tetsuya

    2016-09-01

    Very thin aluminum-doped zinc oxide (AZO) films with a well-defined (0001) orientation and a surface roughness of 0.357 nm were deposited on amorphous glass substrates at a temperature of 200 °C by radio frequency magnetron sputtering, which are promising, particularly in terms of orientation evolution, surface roughness, and carrier transport, as buffer layers for the subsequent deposition of highly (0001)-oriented AZO polycrystalline films of 490 nm thickness by direct current (DC) magnetron sputtering. Sintered AZO targets with an Al2O3 content of 2.0 wt. % were used. DC magnetron sputtered AZO films on bare glass substrates showed a mixed (0001) and the others crystallographic orientation, and exhibited a high contribution of grain boundary scattering to carrier transport, resulting in reduced Hall mobility. Optimizing the thickness of the AZO buffer layers to 10 nm led to highly (0001)-oriented bulk AZO films with a marked reduction in the above contribution, resulting in AZO films with improved Hall mobility together with enhanced carrier concentration. The surface morphology and point defect density were also improved by applying the buffer layers, as shown by atomic force microscopy and Raman spectroscopy, respectively.

  12. Epitaxial growth of homogeneous single-crystalline AlN films on single-crystalline Cu (1 1 1) substrates

    NASA Astrophysics Data System (ADS)

    Wang, Wenliang; Yang, Weijia; Liu, Zuolian; Lin, Yunhao; Zhou, Shizhong; Qian, Huirong; Gao, Fangliang; Yang, Hui; Li, Guoqiang

    2014-03-01

    The homogeneous and crack free single-crystalline AlN thin films have been epitaxially grown on single-crystalline Cu (1 1 1) substrates with an in-plane alignment of AlN [11-20]//Cu [1-10] by pulsed laser deposition (PLD) technology with an integrated laser rastering program. The as-grown AlN films are studied by spectroscopic ellipsometry, field emission scanning electron microscopy (FESEM), atomic force microscopy (AFM), polarized light microscopy, high-resolution X-ray diffraction, and high-resolution transmission electron microscopy (HRTEM). The spectroscopic ellipsometry reveals the excellent thickness uniformity of as-grown AlN films on the Cu (1 1 1) substrates with a root-mean-square (RMS) thickness inhomogeneity less than 2.6%. AFM and FESEM measurements indicate that very smooth and flat surface AlN films are obtained with a surface RMS roughness of 2.3 nm. The X-ray reflectivity image illustrates that there is a maximum of 1.2 nm thick interfacial layer existing between the as-grown AlN and Cu (1 1 1) substrates and is confirmed by HRTEM measurement, and reciprocal space mapping shows that almost fully relaxed AlN films are achieved only with a compressive strain of 0.48% within ˜321 nm thick films. This work demonstrates a possibility to obtain homogeneous and crack free single-crystalline AlN films on metallic substrates by PLD with optimized laser rastering program, and brings up a broad prospect for the application of acoustic filters that require abrupt hetero-interfaces between the AlN films and the metallic electrodes.

  13. Capping layer-tailored interface magnetic anisotropy in ultrathin Co2FeAl films

    NASA Astrophysics Data System (ADS)

    Belmeguenai, M.; Gabor, M. S.; Petrisor, T.; Zighem, F.; Chérif, S. M.; Tiusan, C.

    2015-01-01

    Co2FeAl (CFA) thin films of various thicknesses (2 nm ≤ d ≤ 50 nm) have been grown on (001) MgO single crystal substrates and then capped with Cr, V, and Ta. Their magnetic and structural properties have been studied by x-ray diffraction (XRD), vibrating sample magnetometry, and broadband microstrip ferromagnetic resonance (MS-FMR). The XRD revealed that the films are epitaxial with the cubic [001] CFA axis normal to the substrate plane and that the chemical order varies from the B2 phase to the A2 phase when decreasing the thickness. The deduced lattice parameters showed that the Cr-capped films exhibit a larger tetragonal distortion, as compared with the films capped with V or Ta. The presence of magnetic dead layers has been observed in CFA samples capped with V and Ta but not in the case of the Cr-capped ones. The effective magnetization, deduced from the fit of MS-FMR measurements, increases (decreases) linearly with the CFA inverse thickness (1/d) for the Cr-capped (Ta-capped) films while it is constant for the V-capped ones. This allows quantifying the perpendicular surface anisotropy coefficients of -0.46 erg/cm2 and 0.74 erg/cm2 for Cr and Ta-capped films, respectively. Moreover, the fourfold and the uniaxial anisotropy fields, measured in these films, showed different trends with a respect to the CFA inverse thickness. This allows inferring that a non-negligible part of the fourfold magnetocrystalline term is of interfacial origin.

  14. Comparison of thermal fluctuations in foam films and bilayer structures

    NASA Astrophysics Data System (ADS)

    Ivanova, N. G.; Tsekov, R.

    2013-12-01

    In the frames of the DLVO theory the root mean square amplitude and correlation length of capillary waves in thin liquid films are calculated. Their dependencies on some important physical parameters are studied. Two models are considered: films with classical interfaces and films between lipid bilayers. The performed numerical analysis demonstrates essential difference in their behavior, which is due to the different elastic properties of the film surfaces in the models.

  15. Interfacial perpendicular magnetic anisotropy and damping parameter in ultra thin Co{sub 2}FeAl films

    SciTech Connect

    Cui, Yishen; Khodadadi, Behrouz; Schaefer, Sebastian; Mewes, Tim; Lu, Jiwei; Wolf, Stuart A.

    2013-04-22

    B2-ordered Co{sub 2}FeAl films were synthesized using an ion beam deposition tool. A high degree of chemical ordering {approx}81.2% with a low damping parameter ({alpha}) less than 0.004 was obtained in a 50 nm thick film via rapid thermal annealing at 600 Degree-Sign C. The perpendicular magnetic anisotropy (PMA) was optimized in ultra thin Co{sub 2}FeAl films annealed at 350 Degree-Sign C without an external magnetic field. The reduced thickness and annealing temperature to achieve PMA introduced extrinsic factors thus increasing {alpha} significantly. However, the observed damping of Co{sub 2}FeAl films was still lower than that of Co{sub 60}Fe{sub 20}B{sub 20} films prepared at the same thickness and annealing temperature.

  16. Structural properties of SrO thin films grown by molecular beam epitaxy on LaAlO3 substrates

    NASA Astrophysics Data System (ADS)

    Maksimov, O.; Heydemann, V. D.; Fisher, P.; Skowronski, M.; Salvador, P. A.

    2006-12-01

    SrO films were grown on LaAlO3 substrates by molecular beam epitaxy and characterized using reflection high-energy electron diffraction (RHEED) and x-ray diffraction (XRD). The evolution of the RHEED pattern is discussed as a function of film thickness. 500Å thick SrO films were relaxed and exhibited RHEED patterns indicative of an atomically smooth surface having uniform terrace heights. Films had the epitaxial relationship (001)SrO‖(001)LaAlO3; [010]SrO‖[110]LaAlO3. This 45° in-plane rotation minimizes mismatch and leads to films of high crystalline quality, as verified by Kikuchi lines in the RHEED patterns and narrow rocking curves of the (002) XRD peak.

  17. Surface nanopatterning of Al/Ti multilayer thin films and Al single layer by a low-fluence UV femtosecond laser beam

    NASA Astrophysics Data System (ADS)

    Kovačević, Aleksander G.; Petrović, Suzana; Bokić, Bojana; Gaković, Biljana; Bokorov, Miloš T.; Vasić, Borislav; Gajić, Radoš; Trtica, Milan; Jelenković, Branislav M.

    2015-01-01

    The effects of UV femtosecond laser beam with 76 MHz repetition rate on two types of thin films on Si substrate - the Al single layer thin film, and the multilayered thin film consisted of five Al/Ti bilayers (total thickness 130 nm) - were studied. The surface modification of the target was done by low fluences and different irradiation times, not exceeding ∼300 s. Nanopatterns in the form of femtosecond-laser induced periodic surface structures (fs-LIPSS) with periodicity of <315 nm and height of ∼45 nm were registered upon irradiation of the thin films. It was shown that: (i) the fs-LIPSS evolve from ruffles similar to high spatial frequency LIPSS (HSFL) into a low spatial frequency LIPSS (LSFL) if a certain threshold of the fluence is met, (ii) the number of LSFL increases with the exposition time and (iii) the LSFL remain stable even after long exposure times. We achieved high-quality highly-controllable fabrication of periodic structures on the surface of nanosized multilayer films with high-repetition-rate low-fluence femtosecond laser pulses. Compared to the Al single layer, the presence of the Ti underlayer in the Al/Ti multilayer thin film enabled more efficient heat transmittance through the Al/Ti interface away from the interaction zone which caused the reduction of the ablation effects leading to the formation of more regular LIPSS. The different outcomes of interactions with multi and single layer thin films lead to the conclusion that the behavior of the LIPSS is due to thin film structure.

  18. Evaluating interface strength of calcium phosphate sol-gel-derived thin films to Ti6Al4V substrate.

    PubMed

    Gan, Lu; Wang, Jian; Pilliar, Robert M

    2005-01-01

    The interface shear strength of Ca-P thin films applied to Ti6Al4V substrates have been evaluated in this study using a substrate straining method--a shear lag model. The Ca-P films were synthesized using sol-gel methods from either an inorganic or organic precursor solution. Strong interface bonding was demonstrated for both film types. The films were identified as non-stoichiometric hydroxyapatite but with different Ca/P ratios. The Ca-P films were 1-1.5 microm thick and testing and analysis using the shear lag approach revealed a shear strength of approximately 347 and 280 MPa for Inorganic and Organic Route-formed films, respectively. Overall, the exceptional mechanical properties of Ca-P/Ti6Al4V system along with the inherent advantages of sol-gel processing support continued studies to utilize this technology for bone-interfacing implant surface modification. PMID:15207465

  19. Plasmonic enhancement of UV emission from ZnO thin films induced by Al nano-concave arrays

    NASA Astrophysics Data System (ADS)

    Norek, Małgorzata; Łuka, Grzegorz; Włodarski, Maksymilian

    2016-10-01

    Surface plasmons (SPs) supported by Al nano-concave arrays with increasing interpore distance (Dc) were used to enhance the ultraviolet light emission from ZnO thin films. Two sets of samples were prepared: in the first set the thin ZnO films were deposited directly on Al nanoconcaves (the Al/ZnO samples) and in the second set a 10 nm - Al2O3 spacer was placed between the textured Al and the ZnO films (the Al/Al2O3-ALD/ZnO samples). In the Al/ZnO samples the enhancement was limited by a nonradiative energy dissipation due to the Ohmic loss in the Al metal. However, for the ZnO layer deposited directly on Al nanopits synthesized at 150 V (Dc = 333 ± 18 nm), the largest 9-fold enhancement was obtained by achieving the best energy fit between the near band-edge (NBE) emission from ZnO and the λ(0,1) SPP resonance mode. In the Al/Al2O3-ALD/ZnO samples the amplification of the UV emission was smaller than in the Al/ZnO samples due to a big energy mismatch between the NBE emission and the λ(0,1) plasmonic mode. The results obtained in this work indicate that better tuning of the NBE - λ(0,1) SPP resonance mode coupling is possible through a proper modification of geometrical parameters in the Al/Al2O3-ALD/ZnO system such as Al nano-concave spacing and the thickness of the corresponding layer. This approach will reduce the negative influence of the non-radiative plasmonic modes and most likely will lead to further enhancement of the SP-modulated UV emission from ZnO thin films.

  20. Effects of Al Doping on the Properties of ZnO Thin Films Deposited by Atomic Layer Deposition.

    PubMed

    Zhai, Chen-Hui; Zhang, Rong-Jun; Chen, Xin; Zheng, Yu-Xiang; Wang, Song-You; Liu, Juan; Dai, Ning; Chen, Liang-Yao

    2016-12-01

    The tuning of structural, optical, and electrical properties of Al-doped ZnO films deposited by atomic layer deposition technique is reported in this work. With the increasing Al doping level, the evolution from (002) to (100) diffraction peaks indicates the change in growth mode of ZnO films. Spectroscopic ellipsometry has been applied to study the thickness, optical constants, and band gap of AZO films. Due to the increasing carrier concentration after Al doping, a blue shift of band gap and absorption edge can be observed, which can be interpreted by Burstein-Moss effect. The carrier concentration and resistivity are found to vary significantly among different doping concentration, and the optimum value is also discussed. The modulations and improvements of properties are important for Al-doped ZnO films to apply as transparent conductor in various applications.

  1. Effects of Al Doping on the Properties of ZnO Thin Films Deposited by Atomic Layer Deposition

    NASA Astrophysics Data System (ADS)

    Zhai, Chen-Hui; Zhang, Rong-Jun; Chen, Xin; Zheng, Yu-Xiang; Wang, Song-You; Liu, Juan; Dai, Ning; Chen, Liang-Yao

    2016-09-01

    The tuning of structural, optical, and electrical properties of Al-doped ZnO films deposited by atomic layer deposition technique is reported in this work. With the increasing Al doping level, the evolution from (002) to (100) diffraction peaks indicates the change in growth mode of ZnO films. Spectroscopic ellipsometry has been applied to study the thickness, optical constants, and band gap of AZO films. Due to the increasing carrier concentration after Al doping, a blue shift of band gap and absorption edge can be observed, which can be interpreted by Burstein-Moss effect. The carrier concentration and resistivity are found to vary significantly among different doping concentration, and the optimum value is also discussed. The modulations and improvements of properties are important for Al-doped ZnO films to apply as transparent conductor in various applications.

  2. Effects of Al Doping on the Properties of ZnO Thin Films Deposited by Atomic Layer Deposition.

    PubMed

    Zhai, Chen-Hui; Zhang, Rong-Jun; Chen, Xin; Zheng, Yu-Xiang; Wang, Song-You; Liu, Juan; Dai, Ning; Chen, Liang-Yao

    2016-12-01

    The tuning of structural, optical, and electrical properties of Al-doped ZnO films deposited by atomic layer deposition technique is reported in this work. With the increasing Al doping level, the evolution from (002) to (100) diffraction peaks indicates the change in growth mode of ZnO films. Spectroscopic ellipsometry has been applied to study the thickness, optical constants, and band gap of AZO films. Due to the increasing carrier concentration after Al doping, a blue shift of band gap and absorption edge can be observed, which can be interpreted by Burstein-Moss effect. The carrier concentration and resistivity are found to vary significantly among different doping concentration, and the optimum value is also discussed. The modulations and improvements of properties are important for Al-doped ZnO films to apply as transparent conductor in various applications. PMID:27639580

  3. Perpendicularizing magnetic anisotropy of full-Heusler Co2FeAl films by cosputtering with terbium

    NASA Astrophysics Data System (ADS)

    Li, X. Q.; Xu, X. G.; Zhang, D. L.; Miao, J.; Zhan, Q.; Jalil, M. B. A.; Yu, G. H.; Jiang, Y.

    2010-04-01

    In this letter, we fabricated Co2FeAl films with perpendicular-to-plane magnetic anisotropy by cosputtering with terbium (Tb). The as-prepared (Tb+Co2FeAl) films (TCFA) consists of nanocrystalline L21 Co2FeAl and amorphous alloy of Tb(Co, Fe, and Al). The coercivity field (Hc) of the TCFA films is adjustable from 200 to 800 Oe. After annealing, the Hc decreases to 70 Oe. A perpendicularly magnetized spin valve with the TCFA films as free and reference layers shows a current-perpendicular-to-plane magnetoresistance of 1.8% at room temperature. Our result opens a way to fabricate perpendicularly magnetized full-Heusler alloys and makes it possible to realize faster and simple structured magnetic storage bits in the future.

  4. Influence of dosing sequence and film thickness on structure and resistivity of Al-ZnO films grown by atomic layer deposition

    SciTech Connect

    Pollock, Evan B. Lad, Robert J.

    2014-07-01

    Aluminum-doped zinc oxide (AZO) films were deposited onto amorphous silica substrates using an atomic layer deposition process with diethyl zinc (DEZ), trimethyl aluminum (TMA), and deionized water at 200 °C. Three different Al doping sequences were used at a ZnO:Al ratio of 11:1 within the films. A minimum film resistivity of 1.6 × 10{sup −3} Ω cm was produced using sequential dosing of DEZ, TMA, DEZ, followed by H{sub 2}O for the Al doping step. This “ZAZW” sequence yielded an AZO film resistivity that is independent of film thickness, crystallographic texture, and grain size, as determined by high resolution x-ray diffraction (XRD). A pseudo-Voigt analysis method yields values for grain sizes that are smaller than those calculated using other XRD methods. Anisotropic grain sizes or variations in crystallographic texture have minimal influence on film resistivity, which suggests that factors other than film texture, such as intragrain scattering, may be important in influencing film resistivity.

  5. Structural properties of ZnO:Al films produced by the sol–gel technique

    SciTech Connect

    Zaretskaya, E. P. Gremenok, V. F.; Semchenko, A. V.; Sidsky, V. V.; Juskenas, R. L.

    2015-10-15

    ZnO:Al films are produced by sol–gel deposition at temperatures of 350–550°C, using different types of reagents. Atomic-force microscopy, X-ray diffraction analysis, Raman spectroscopy, and optical transmittance measurements are used to study the dependence of the structural, morphological, and optical properties of the ZnO:Al coatings on the conditions of deposition. The optical conditions for the production of ZnO:Al layers with preferred orientation in the [001] direction and distinguished by small surface roughness are established. The layers produced in the study possess optical transmittance at a level of up to 95% in a wide spectral range and can be used in optoelectronic devices.

  6. Single dominant distribution of Ge nanogranule embedded in Al oxide thin film

    SciTech Connect

    Abe, Seishi; Ohnuma, Shigehiro; Ohnuma, Masato; Ping, D. H.

    2008-11-15

    This paper investigates size distribution of Ge nanogranules embedded in Al oxide thin film prepared by rf reactive sputtering method. It is found from the results of x-ray diffraction and small angle x-ray diffraction spectroscopy that their mean sizes distribute bimodally or single dominantly with respect to sputtering process parameter of additional oxygen ratio in Ar and Ge concentrations. Compositional plane of these distribution types reveals that single dominant distribution appears along the line of stoichiometric composition of Al{sub 2}O{sub 3}, and deviation from stoichiometry results in bimodal distribution. Thus, size uniformity of Ge nanogranules seems to be enhanced when the Al oxide matrix forms stoichiometric composition.

  7. A Technical, User and Cost Comparison Study of Microfiche Duplicate Film Material. Final Report.

    ERIC Educational Resources Information Center

    Prevel, James J.

    A technical, user and cost comparison study was undertaken to provide the Educational Resources Information Clearinghouse (ERIC) staff with data on silver halide, diazo, and vesicular type films for microfiche duplication. This information will allow ERIC to determine if diazo and/or vesicular films should be considered in producing ERIC duplicate…

  8. Nanostructured Al-ZnO/CdSe/Cu2O ETA solar cells on Al-ZnO film/quartz glass templates

    NASA Astrophysics Data System (ADS)

    Wang, Xianghu; Li, Rongbin; Fan, Donghua

    2011-12-01

    The quartz/Al-ZnO film/nanostructured Al-ZnO/CdSe/Cu2O extremely thin absorber solar cell has been successfully realized. The Al-doped ZnO one-dimensional nanostructures on quartz templates covered by a sputtering Al-doped ZnO film was used as the n-type electrode. A 19- to 35-nm-thin layer of CdSe absorber was deposited by radio frequency magnetron sputtering, coating the ZnO nanostructures. The voids between the Al-ZnO/CdSe nanostructures were filled with p-type Cu2O, and therefore, the entire assembly formed a p-i-n junction. The cell shows the energy conversion efficiency as high as 3.16%, which is an interesting option for developing new solar cell devices. PACS: 88.40.jp; 73.40.Lq; 73.50.Pz.

  9. Nanostructured Al-ZnO/CdSe/Cu2O ETA solar cells on Al-ZnO film/quartz glass templates.

    PubMed

    Wang, Xianghu; Li, Rongbin; Fan, Donghua

    2011-01-01

    The quartz/Al-ZnO film/nanostructured Al-ZnO/CdSe/Cu2O extremely thin absorber solar cell has been successfully realized. The Al-doped ZnO one-dimensional nanostructures on quartz templates covered by a sputtering Al-doped ZnO film was used as the n-type electrode. A 19- to 35-nm-thin layer of CdSe absorber was deposited by radio frequency magnetron sputtering, coating the ZnO nanostructures. The voids between the Al-ZnO/CdSe nanostructures were filled with p-type Cu2O, and therefore, the entire assembly formed a p-i-n junction. The cell shows the energy conversion efficiency as high as 3.16%, which is an interesting option for developing new solar cell devices.PACS: 88.40.jp; 73.40.Lq; 73.50.Pz. PMID:22136081

  10. Closed field unbalanced magnetron sputtering ion plating of Ni/Al thin films: influence of the magnetron power.

    PubMed

    Said, R; Ahmed, W; Gracio, J

    2010-04-01

    In this study NiAl thin films have been deposited using closed field unbalanced magnetron sputtering Ion plating (CFUBMSIP). The influence of magnetron power has been investigated using dense and humongous NiAl compound targets onto stainless steel and glass substrates. Potential applications include tribological, electronic media and bond coatings in thermal barrier coatings system. Several techniques has been used to characterise the films including surface stylus profilometry, energy dispersive spectroscopy (EDAX), X-Ray diffraction (XRD) Composition analysis of the samples was carried out using VGTOF SIMS (IX23LS) and Atomic force microscopy (AFM). Scratch tester (CSM) combined with acoustic emission singles during loading in order to compare the coating adhesion. The acoustic emission signals emitted during the indentation process were used to determine the critical load, under which the film begins to crack and/or break off the substrate. The average thickness of the films was approximately 1 um. EDAX results of NiAl thin films coating with various magnetron power exhibited the near equal atomic% Ni:Al. The best result being obtained using 300 W and 400 W DC power for Ni and Al targets respectively. XRD revealed the presence of beta NiAl phase for all the films coatings. AFM analysis of the films deposited on glass substrates exhibited quite a smooth surface with surface roughness values in the nanometre range. CSM results indicate that best adhesion was achieved at 300 W for Ni, and 400 W for Al targets compared to sample other power values. SIMS depth profile showed a uniform distribution of the Ni and Al component from the surface of the film to the interface.

  11. Al-26 production profile and model comparisons in Canyon Diablo

    NASA Astrophysics Data System (ADS)

    Michlovich, E.; Elmore, D.; Vogt, S.; Lipschutz, M.; Masarik, J.; Reedy, R. C.

    1993-03-01

    The large preatmospheric size of the Canyon Diablo meteorite, a radius of about 15 m, makes it especially suitable for systematic studies of cosmogenic nuclide production rates of iron objects in a 2 pi geometry. To reconstruct the exposure history of the meteoroid, Heymann et al. investigated several fragments recovered from known geographic locations around the crater for their shock features and cosmogenic nobel gases. They applied the Signer-Nier noble gas production rate model to establish the preatmospheric depth of the specimens in the meteoroid. Cosmic ray exposure ages suggested a multi-episodic irradiation, with 170 or 540 Ma being inferred for most of the samples studied while two anomalous specimens indicated a possible third exposure age at 940 Ma. Be-10 and Cl-36 have been measured in a number of these same samples by accelerator mass spectrometry (AMS), with use being made of the preatmospheric depths determined in Heymann et al. to construct production profiles. The present study extends the cosmogenic radionuclide data to Al-26 and compares the results with both the production rate model of Reedy and Arnold and production rates determined from the cross sections used by the Reedy-Arnold model (for the major nuclear reactions making Al-26) in combination with differential fluxes calculated using the Los Alamos High Energy Transport (LAHET) Code System. Model calculations for Be-10 and Cl-36 have also been obtained.

  12. Al-26 production profile and model comparisons in Canyon Diablo

    NASA Technical Reports Server (NTRS)

    Michlovich, E.; Elmore, D.; Vogt, S.; Lipschutz, M.; Masarik, J.; Reedy, R. C.

    1993-01-01

    The large preatmospheric size of the Canyon Diablo meteorite, a radius of about 15 m, makes it especially suitable for systematic studies of cosmogenic nuclide production rates of iron objects in a 2 pi geometry. To reconstruct the exposure history of the meteoroid, Heymann et al. investigated several fragments recovered from known geographic locations around the crater for their shock features and cosmogenic nobel gases. They applied the Signer-Nier noble gas production rate model to establish the preatmospheric depth of the specimens in the meteoroid. Cosmic ray exposure ages suggested a multi-episodic irradiation, with 170 or 540 Ma being inferred for most of the samples studied while two anomalous specimens indicated a possible third exposure age at 940 Ma. Be-10 and Cl-36 have been measured in a number of these same samples by accelerator mass spectrometry (AMS), with use being made of the preatmospheric depths determined in Heymann et al. to construct production profiles. The present study extends the cosmogenic radionuclide data to Al-26 and compares the results with both the production rate model of Reedy and Arnold and production rates determined from the cross sections used by the Reedy-Arnold model (for the major nuclear reactions making Al-26) in combination with differential fluxes calculated using the Los Alamos High Energy Transport (LAHET) Code System. Model calculations for Be-10 and Cl-36 have also been obtained.

  13. Electrical and optical properties of Al-doped ZnO and ZnAl2O4 films prepared by atomic layer deposition

    PubMed Central

    2013-01-01

    ZnO/Al2O3 multilayers were prepared by alternating atomic layer deposition (ALD) at 150°C using diethylzinc, trimethylaluminum, and water. The growth process, crystallinity, and electrical and optical properties of the multilayers were studied with a variety of the cycle ratios of ZnO and Al2O3 sublayers. Transparent conductive Al-doped ZnO films were prepared with the minimum resistivity of 2.4 × 10−3 Ω·cm at a low Al doping concentration of 2.26%. Photoluminescence spectroscopy in conjunction with X-ray diffraction analysis revealed that the thickness of ZnO sublayers plays an important role on the priority for selective crystallization of ZnAl2O4 and ZnO phases during high-temperature annealing ZnO/Al2O3 multilayers. It was found that pure ZnAl2O4 film was synthesized by annealing the specific composite film containing alternative monocycle of ZnO and Al2O3 sublayers, which could only be deposited precisely by utilizing ALD technology. PMID:23537274

  14. Passivation Effect of Atomic Layer Deposition of Al2O3 Film on HgCdTe Infrared Detectors

    NASA Astrophysics Data System (ADS)

    Zhang, Peng; Ye, Zhen-Hua; Sun, Chang-Hong; Chen, Yi-Yu; Zhang, Tian-Ning; Chen, Xin; Lin, Chun; Ding, Ring-Jun; He, Li

    2016-09-01

    The passivation effect of atomic layer deposition of (ALD) Al2O3 film on a HgCdTe infrared detector was investigated in this work. The passivation effect of Al2O3 film was evaluated by measuring the minority carrier lifetime, capacitance versus voltage ( C- V) characteristics of metal-insulator-semiconductor devices, and resistance versus voltage ( R- V) characteristics of variable-area photodiodes. The minority carrier lifetime, C- V characteristics, and R- V characteristics of HgCdTe devices passivated by ALD Al2O3 film was comparable to those of HgCdTe devices passivated by e-beam evaporation of ZnS/CdTe film. However, the baking stability of devices passivated by Al2O3 film is inferior to that of devices passivated by ZnS/CdTe film. In future work, by optimizing the ALD Al2O3 film growing process and annealing conditions, it may be feasible to achieve both excellent electrical properties and good baking stability.

  15. Properties of LaAlO Film after Waterless Process Using Organic Solvent Containing Anhydrous Hydrofluoric Acid

    NASA Astrophysics Data System (ADS)

    Masatomo Honjo,; Naoyoshi Komatsu,; Takuro Masuzumi,; Hidemitsu Aoki,; Daisuke Watanabe,; Chiharu Kimura,; Takashi Sugino,

    2010-04-01

    Lanthanum (La)-based oxide films have been studied as high-k (high dielectric constant) gate dielectrics. However, moisture absorption is a serious problem for oxide films containing La. We have attempted to use waterless solutions instead of water-based solutions to remove high-k films to suppress the moisture absorption of the lanthanum aluminate (LaAlO) film. We report the effect of an anhydrous hydrofluoric acid (AHF) and isopropyl alcohol (IPA) mixed solution as an etching solution and hydrofluoro-ether (HFE) as a rising solution on the properties of LaAlO films. We have succeeded in suppressing the moisture absorption of LaAlO films by using waterless solutions for a front end of line (FEOL) process. In addition, the selectivity (LaAlO/SiO2), the etching ratio of LaAlO to SiO2, was improved using this process. It is considered that this technology will be useful for the next-generation devices with lanthanum-based oxide films.

  16. Formation of CuAlO2 Film by Ultrasonic Spray Pyrolysis

    NASA Astrophysics Data System (ADS)

    Iping, S.; Lockman, Zainovia; Hutagalung, S. D.; Kamsul, A.; Matsuda, Atsunori

    2011-10-01

    Smooth, crack free and homogenous CuAlO2 film was produced by chemical solution deposition process via spray pyrolysis technique on a cleaned Si substrate. The precursor solution used was comprised of a mixture of 45.87 mmol Cu(NO3)2.3H2O and 90 mmol Al(NO3)3.9H2O at ratio of Cu:Al = 1.2:1. The precursor solution was placed in a mist chamber and was atomized by a nebulizer to produce precursor mist. The precursor mist was then carried out by Ar gas and was sprayed onto a heated Si. Two main parameters were studied: the distance between the nozzle of the precursor mist chamber and the Si and the temperature of the Si substrate. It appears that from the XRD data, CuAlO2 can be detected for samples prepared by spraying the precursor mist at temperature of > 550 °C with distance between the nozzle and the substrate of 3cm. Reaction of the Cu and Al ions in the mist near the substrate may have promoted the crystallisation of CuAlO2.

  17. Co-Sputtered and Rapid-Thermal-Annealed CIAS Thin Films Using CuSe2/ln/Al Triple Targets of Varying Ln/Al Compositions.

    PubMed

    Kim, Nam-Hoon; Jun, Young-Kil; Lee, Woo-Sun

    2016-02-01

    The 20.9% conversion efficiency of I-III-VI chalcopyrite-based solar cells, the highest in the world, makes them promising candidates for high-efficiency thin film solar cells. However, Ga is one of the most expensive rare materials with the critical degradation in device efficiency. Cu(ln(1-X)Al(X))Se2 (CIAS) is considered an alternative to Cu(ln(1-X)Ga(X))Se2 because of its good structural suitability and the low cost of Al. CIAS thin films were formed using triple targets of CuSe2/ln/Al in a co-sputtering system to control the composition ratio, x = [Al]/([ln]+[Al), by varying each RF power for In/Al with rapid thermal annealing. The chalcopyrite peaks shifted toward higher 2theta as x increased. The CIAS thin films had 74.24-86.81% absorption with band gap, Eg, of 2.28-2.50 eV in the 400-1600 nm range. A low resistivity of 1.1 x 10(-2) omega(-cm) was obtained in the CIAS thin films with x of 0.74. PMID:27433625

  18. Impact of graphene-graphite films on electrical properties of Al2O3 metal-insulator-semiconductor structure

    NASA Astrophysics Data System (ADS)

    Choi, Kyeong-Keun; Kee, Jong; Park, Chan-Gyung; Kim, Deok-kee

    2016-08-01

    The diffusion barrier property of directly grown graphene-graphite films between Al2O3 films and Si substrates was evaluated using metal-insulator-semiconductor (MIS) structures. The roughness, morphology, sheet resistance, Raman spectrum, chemical composition, and breakdown field strength of the films were investigated after rapid thermal annealing. About 2.5-nm-thick graphene-graphite films effectively blocked the formation of the interfacial layer between Al2O3 films and Si, which was confirmed by the decreased breakdown field strength of graphene-graphite film structures. After annealing at 975 °C for 90 s, the increase in the mean breakdown field strength of the structure with the ˜2.5-nm-thick graphene-graphite film was about 91% (from 8.7 to 16.6 MV/cm), while that without the graphene-graphite film was about 187% (from 11.2 to 32.1 MV/cm). Si atom diffusion into Al2O3 films was reduced by applying the carbon-based diffusion barrier.

  19. Impact of graphene–graphite films on electrical properties of Al2O3 metal–insulator–semiconductor structure

    NASA Astrophysics Data System (ADS)

    Choi, Kyeong-Keun; Kee, Jong; Park, Chan-Gyung; Kim, Deok-kee

    2016-08-01

    The diffusion barrier property of directly grown graphene–graphite films between Al2O3 films and Si substrates was evaluated using metal–insulator–semiconductor (MIS) structures. The roughness, morphology, sheet resistance, Raman spectrum, chemical composition, and breakdown field strength of the films were investigated after rapid thermal annealing. About 2.5-nm-thick graphene–graphite films effectively blocked the formation of the interfacial layer between Al2O3 films and Si, which was confirmed by the decreased breakdown field strength of graphene–graphite film structures. After annealing at 975 °C for 90 s, the increase in the mean breakdown field strength of the structure with the ∼2.5-nm-thick graphene–graphite film was about 91% (from 8.7 to 16.6 MV/cm), while that without the graphene–graphite film was about 187% (from 11.2 to 32.1 MV/cm). Si atom diffusion into Al2O3 films was reduced by applying the carbon-based diffusion barrier.

  20. Exploration of Al-Doped ZnO in Photovoltaic Thin Films

    NASA Astrophysics Data System (ADS)

    Ciccarino, Christopher; Sahiner, M. Alper

    The electrical properties of Al doped ZnO-based thin films represent a potential advancement in the push for increasing solar cell efficiency. Doping with Aluminum will theoretically decrease resistivity of the film and therefore achieve this potential as a viable option in the P-N junction phase of photovoltaic cells. The n-type semi-conductive characteristics of the ZnO layer will theoretically be optimized with the addition of Aluminum carriers. In this study, Aluminum doping concentrations ranging from 1-3% by mass were produced, analyzed, and compared. Films were developed onto ITO coated glass using the Pulsed Laser Deposition technique. Target thickness was 250 nm and ellipsometry measurements showed uniformity and accuracy in this regard. Active dopant concentrations were determined using Hall Effect measurements. Efficiency measurements showed possible applications of this doped compound, with upwards of 7% efficiency measured, using a Keithley 2602 SourceMeter set-up. XRD scans showed highly crystalline structures, with effective Al intertwining of the hexagonal wurtzile ZnO molecular structure. This alone indicates a promising future of collaboration between these two materials.

  1. Characteristics of AZO thin films prepared at various Al target input current deposited on PET substrate

    NASA Astrophysics Data System (ADS)

    Kim, Yun-Hae; Park, Chang-Wook; Lee, Jin-Woo; Lee, Dong Myung

    2015-03-01

    Transparent conductive oxide is a thin film to be used in numerous applications throughout the industry in general. Transparent electrode materials used in these industries are in need of light transmittance with excellent high and low electrical characteristics, substances showing the most excellent physical properties while satisfying all the characteristics such as indium tin oxide film. However, reserves of indium are very small, there is an environmental pollution problem. So the study of zinc oxide (ZnO) is actively carried out in an alternative material. This study analyzed the characteristics by using a direct current (DC) magnetron sputtering system. The electric and optical properties of these films were studied by Hall measurement and optical spectroscopy, respectively. When the Al target input current is 2 mA and 4 mA, it demonstrates about 80% transmittance in the range of the visible spectrum. Also, when Al target input current was 6 mA, sheet resistance was the smallest on PET substrate. The minimum resistivity is 3.96×10-3 ohm/sq.

  2. Effects of annealing pressure and Ar+ sputtering cleaning on Al-doped ZnO films

    NASA Astrophysics Data System (ADS)

    Wang, Jiwei; Mei, Yong; Lu, Xuemei; Fan, Xiaoxing; Kang, Dawei; Xu, Panfeng; Tan, Tianya

    2016-11-01

    Post-treatments of Al-doped ZnO films fabricated by sol-gel method were studied in condition of annealing in air, vacuum and protective ambient, as well as the follow-up Ar+ sputtering cleaning. The effect of annealing pressure on resistivity of AZO films was investigated from 105 to 10-4 Pa, where the resistivity decreased four orders of magnitude as the pressure decreased and approached to its minimum at 10 Pa. It was observed that the main decreasing of resistivity occurred in a very narrow range of middle vacuum (between 100 and 10 Pa) and high vacuum was dispensable. The XRD and XPS characterizations demonstrated that the radical increasing of oxygen vacancy, Zn interstitial and substitution of Al3+ for Zn2+ under middle vacuum were responsible for the significant enhancement of conductivity. The follow-up Ar+ sputtering cleaning can further decrease the resistivity through removing the chemisorbed oxygen on film surface and grain boundaries, meanwhile fulfil the surface texture process, and thus improve both electrical and optical performances for applications.

  3. Environmental stability of solution processed Al-doped ZnO naoparticulate thin films using surface modification technique

    NASA Astrophysics Data System (ADS)

    Vunnam, Swathi; Ankireddy, Krishnamraju; Kellar, Jon; Cross, William

    2014-12-01

    The environmental stability of solution processed Al-doped ZnO (AZO) thin films was enhanced by functionalizing the film surface with a thin self-assembled molecular layer. Functionalization of AZO films was performed using two types of molecules having identical 12-carbon alkyl chain termination but different functional groups: dodecanethiol (DDT) and dodecanoic acid (DDA). Surface modified AZO films were examined using electrical resistivity measurements, contact angle measurements and quantitative nanomechanical property mapping atomic force microscopy. The hydrophobic layer inhibits the penetration of oxygen and water into the AZO's grain boundaries thus significantly increasing the environmental stability over unmodified AZO. Surface modified AZO films using DDT exhibited lower electrical resistivity compared to DDA functionalized AZO films. Our study demonstrates a new approach for improving the physical properties of oxide based nanoparticulate films for device applications.

  4. Epitaxial growth of 2 inch diameter homogeneous AlN single-crystalline films by pulsed laser deposition

    NASA Astrophysics Data System (ADS)

    Yang, Hui; Wang, Wenliang; Liu, Zuolian; Li, Guoqiang

    2013-03-01

    2 inch diameter homogeneous AlN films are epitaxially grown on sapphire substrates by pulsed laser deposition (PLD). By optimizing laser rastering and PLD growth conditions, the 2 inch diameter single-crystalline AlN films exhibit excellent thickness uniformity with root-mean-square (RMS) inhomogeneity less than 4.5% and very smooth surface with RMS roughness less than 1.53 nm. There is a maximum of 1.5 nm thick interfacial layer, if there is any, existing between the as-grown AlN and the pre-nitrided sapphire substrate, and the as-grown AlN films are almost fully relaxed only with a 0.26% in-plane compressive strain. The achievement of high-quality large-scale AlN films with uniform thickness and atomically abrupt interface is of great interest for the commercial development of AlN-based devices, particularly acoustic filters where abrupt heterointerfaces with substrates and flat surfaces for AlN films are highly desired.

  5. Thermal stability of nanocrystalline (Ti,Zr)0.54Al0.46N films implanted by He+ ions

    NASA Astrophysics Data System (ADS)

    Uglov, V. V.; Abadias, G.; Rovbut, A. Y.; Zlotski, S. V.; Saladukhin, I. A.; Skuratov, V. A.; Petrovich, S.

    2015-07-01

    The influence of irradiation with He+ ions on the thermal stability of TiZrN and (Ti,Zr)0.54Al0.46N nanocrystalline films was studied. The TiZrN and (Ti,Zr)0.54Al0.46N films were prepared by reactive magnetron sputtering. XRD research showed that the TiZrN and (Ti,Zr)0.54Al0.46N films were single-phase systems (based on cubic c-(Ti,Zr)N and cubic c-(Ti,Zr,Al)N solid solutions) with nanocrystalline (grain size 30 and 21 nm, respectively) structure. The irradiation with He+ ions and thermal annealing up to 800 °C do not affect the structure and phase composition of the (Ti,Zr)0.54Al0.46N film. The prior irradiation of the (Ti,Zr)0.54Al0.46N film with He+ ions activates spinodal decomposition of the c-(Ti,Zr,Al)N solid solution after thermal annealing at 1000 °C due to redistribution of the components of the solid solution inside the grains.

  6. Heavily-doped ZnO:Al thin films prepared by using magnetron Co-sputtering: Optical and electrical properties

    NASA Astrophysics Data System (ADS)

    Moon, Eun-A.; Jun, Young-Kil; Kim, Nam-Hoon; Lee, Woo-Sun

    2016-07-01

    Photovoltaic applications require transparent conducting-oxide (TCO) thin films with high optical transmittance in the visible spectral region (380 - 780 nm), low resistivity, and high thermal/chemical stability. The ZnO thin film is one of the most common alternatives to the conventional indium-tin-oxide (ITO) thin film TCO. Highly transparent and conductive ZnO thin films can be prepared by doping with group III elements. Heavily-doped ZnO:Al (AZO) thin films were prepared by using the RF magnetron co-sputtering method with ZnO and Al targets to obtain better characteristics at a low cost. The RF sputtering power to each target was varied to control the doping concentration in fixed-thickness AZO thin films. The crystal structures of the AZO thin films were analyzed by using X-ray diffraction. The morphological microstructure was observed by using scanning electron microscopy. The optical transmittance and the band gap energy of the AZO thin films were examined with an UV-visible spectrophotometer in the range of 300 - 1800 nm. The resistivity and the carrier concentration were examined by using a Hall-effect measurement system. An excellent optical transmittance > 80% with an appropriate band gap energy (3.26 - 3.27 eV) and an improved resistivity (~10 -1 Ω·cm) with high carrier concentration (1017 - 1019 cm -3) were demonstrated in 350-nm-thick AZO thin films for thin-film photovoltaic applications.

  7. Thermoelectric properties optimization of Al-doped ZnO thin films prepared by reactive sputtering Zn-Al alloy target

    NASA Astrophysics Data System (ADS)

    Fan, Ping; Li, Ying-zhen; Zheng, Zhuang-hao; Lin, Qing-yun; Luo, Jing-ting; Liang, Guang-xing; Zhang, Miao-qin; Chen, Min-cong

    2013-11-01

    Al-doped ZnO (AZO) has practical applications in the industry for thermoelectric generation, owing to its nontoxicity, low-cost and stability at high temperatures. In this study, AZO thin films with high quality were deposited on BK7 glass substrates at room-temperature by direct current reactive magnetron sputtering using Zn-Al alloy target. The deposited thin films were annealed at various temperatures ranging from 623 K to 823 K with a space of 50 K. It is found that the absolute value of Seebeck coefficient of AZO thin film annealed at 723 K increases stably with increasing of measuring temperature and reaches a value of ∼60 μV/K at 575 K. After that, Al-doping content was varied to further optimize the thermoelectric properties of AZO thin films. The power factor of AZO thin films with Al content of 3 wt% increased with increase of measuring temperature and the maximum power factor of 1.54 × 10-4 W m-1K-2 was obtained at 550 K with the maximum absolute values of Seebeck coefficient of 99 μV/K, which is promising for high temperature thermoelectric application.

  8. [Preparation of NiAl-MMO Films Electrode and Its Capacitive Deionization Property].

    PubMed

    Wang, Ting; Zhu, Chun-shan; Hu, Cheng-zhi

    2016-02-15

    Hydrotalcites are not only considered as important absorbents in water treatment and but also widely used as super capacitor materials. In this study, NiAl metal oxide (NiAl-MMO) films, which were the calcined products of hydrotalcite-like compounds, were grown on the surface of a foam nickel by an in-situ growth method using a foam nickel substrate as the nickel source. The prepared NiAl-MMO films electrodes materials had stable electrochemical capability, remarkable electrochemical capacitor, and gave a highest specific capacitance of 667 F x g(-1). The desalination performance of material indicated high voltage and weakly alkaline solution were favored for desalination. A highest desalination efficiency was up to 58.17% when the initial concentration of Cl- was 0.003 mol x L(-1), the voltage value was 1.0 V and pH value was 8. The adsorption saturated electrodes could be rapidly regenerated with a desorption rate of 87.96% by electrodes reversion. This study provides a new choice for desalination in wastewater treatment. PMID:27363150

  9. [Preparation of NiAl-MMO Films Electrode and Its Capacitive Deionization Property].

    PubMed

    Wang, Ting; Zhu, Chun-shan; Hu, Cheng-zhi

    2016-02-15

    Hydrotalcites are not only considered as important absorbents in water treatment and but also widely used as super capacitor materials. In this study, NiAl metal oxide (NiAl-MMO) films, which were the calcined products of hydrotalcite-like compounds, were grown on the surface of a foam nickel by an in-situ growth method using a foam nickel substrate as the nickel source. The prepared NiAl-MMO films electrodes materials had stable electrochemical capability, remarkable electrochemical capacitor, and gave a highest specific capacitance of 667 F x g(-1). The desalination performance of material indicated high voltage and weakly alkaline solution were favored for desalination. A highest desalination efficiency was up to 58.17% when the initial concentration of Cl- was 0.003 mol x L(-1), the voltage value was 1.0 V and pH value was 8. The adsorption saturated electrodes could be rapidly regenerated with a desorption rate of 87.96% by electrodes reversion. This study provides a new choice for desalination in wastewater treatment.

  10. Studies on the properties of Al2O3:Cr2O3 (50:50) thin film

    NASA Astrophysics Data System (ADS)

    Ponmudi, S.; Sivakumar, R.; Sanjeeviraja, C.

    2016-05-01

    Aluminium oxide (Al2O3) and chromium oxide (Cr2O3) thin films have received great attention of researchers because of their unique properties of corrosion/oxidation resistance and high dielectric constant. In addition, chromium aluminium oxide has been considered as a best candidate for deep-ultraviolet optical masks. In the present work, thin films of Al2O3:Cr2O3 (50:50) were deposited on pre-cleaned microscopic glass substrate by RF magnetron sputtering technique. The substrate temperature and RF power induced changes in structural, surface morphological, compositional and optical properties of the films have been studied.

  11. Electrical resistivity of nanocrystalline Al-doped zinc oxide films as a function of Al content and the degree of its segregation at the grain boundaries

    NASA Astrophysics Data System (ADS)

    Nasr, B.; Dasgupta, S.; Wang, D.; Mechau, N.; Kruk, R.; Hahn, H.

    2010-11-01

    Highly transparent and conducting Al-doped ZnO (AZO) films are prepared via sol-gel method with a broad range of nominal Al-doping. The film porosity and morphology is determined by the rate of temperature ramping during the drying of the gel phase. The minimum resistivity is observed to occur around 1.5-2 at. % Al-doped films, irrespective of the morphology and microstructure. It is found by local chemical analysis that Al tends to segregate at the grain boundaries and above a critical concentration, the segregated Al starts to dominate the electronic transport in nanocrystalline AZO. The optical measurements corroborate these findings showing a systematic increase in carrier density only up to 1.5-2 at. % Al-doping. It is concluded that the presence of the resistivity minimum is not merely determined by a solubility limit but is a result of the interplay between the changing carrier concentration and carrier scattering at the segregated Al.

  12. Enhancement of ferromagnetic resonance in Al2O3-doped Co2FeAl Heusler alloy film prepared by oblique sputtering

    NASA Astrophysics Data System (ADS)

    Li, Shan-Dong; Cai, Zhi-Yi; Xu, Jie; Cao, Xiao-Qin; Du, Hong-Lei; Xue, Qian; Gao, Xiao-Yang; Xie, Shi-Ming

    2014-10-01

    Large and variable in-plane uniaxial magnetic anisotropy in a nanocrystalline (Co2FeAl)97.8(Al2O3)2.2 soft magnetic thin film is obtained by an oblique sputtering method without being induced by magnetic field or post annealing. The in-plane uniaxial magnetic anisotropy varies from 50 Oe to 180 Oe (1 Oe = 79.5775 Am-1) by adjusting the sample's position. As a result, the ferromagnetic resonance frequency of the film increases from 1.9 GHz to 3.75 GHz.

  13. Static and dynamic magnetic properties of epitaxial Co2FeAl Heusler alloy thin films

    NASA Astrophysics Data System (ADS)

    Ortiz, G.; Gabor, M. S.; Petrisor, T., Jr.; Boust, F.; Issac, F.; Tiusan, C.; Hehn, M.; Bobo, J. F.

    2011-04-01

    Structural and magnetic properties of epitaxial Co2FeAl Heusler alloy thin films were investigated. Films were deposited on single crystal MgO (001XS) substrates at room temperature, followed by an annealing process at 600 °C. MgO and Cr buffer layers were introduced in order to enhance crystalline quality, and improve magnetic properties. Structural analyses indicate that samples have grown in the B2 ordered epitaxial structure. VSM measures show that the MgO buffered sample displays a magnetization saturation of 1010 ± 30 emu/cm3, and Cr buffered sample displays a magnetization saturation of 1032 ± 40 emu/cm3. Damping factor was studied by strip-line ferromagnetic resonance measures. We observed a maximum value for the MgO buffered sample of about 8.5 × 10-3, and a minimum value of 3.8 × 10-3 for the Cr buffered one.

  14. Sputter deposition of Al-doped ZnO films with various incident angles

    SciTech Connect

    Sato, Yasushi; Yanagisawa, Kei; Oka, Nobuto; Nakamura, Shin-ichi; Shigesato, Yuzo

    2009-09-15

    Al-doped ZnO (AZO) films were sputter deposited on glass substrates heated at 200 degree sign C under incident angles of sputtered particles at 0 degree sign (incidence normal to substrate), 20 deg., 40 deg., 60 deg., and 80 deg. In the case of normal incidence, x-ray diffraction pole figures show a strong [001] preferred orientation normal to the film surface. In contrast, in the case wherein the incident angles were higher than 60 degree sign , the [001] orientation inclined by 25 deg. - 35 deg. toward the direction of sputtered particles. Transmission electron microscopy revealed that the tilt angle of the [001] orientation increased with increasing angle of the incident sputtered particles, whereas the columnar structure did not show any sign of inclination with respect to the substrate plane.

  15. Modeling and Experimental Analysis on the Temperature Response of AlN-Film Based SAWRs

    PubMed Central

    Chen, Shuo; You, Zheng

    2016-01-01

    The temperature responses of aluminum nitride (AlN) based surface acoustic wave resonator (SAWR) are modeled and tested. The modeling of the electrical performance is based on a modified equivalent circuit model introduced in this work. For SAWR consisting of piezoelectric film and semiconducting substrate, parasitic parameters from the substrate is taken into consideration for the modeling. By utilizing the modified model, the high temperature electrical performance of the AlN/Si and AlN/6H-SiC based SAWRs can be predicted, indicating that a substrate with a wider band gap will lead to a more stable high temperature behavior, which is further confirmed experimentally by high temperature testing from 300 K to 725 K with SAWRs having a wavelength of 12 μm. Temperature responses of SAWR’s center frequency are also calculated and tested, with experimental temperature coefficient factors (TCF) of center frequency being −29 ppm/K and −26 ppm/K for the AlN/Si and AlN/6H-SiC based SAWRs, which are close to the predicted values. PMID:27483286

  16. Significant Enhancement in the Conductivity of Al-Doped Zinc Oxide thin Films for TCO Application

    NASA Astrophysics Data System (ADS)

    Mohite, R. M.; Ansari, J. N.; Roy, A. S.; Kothawale, R. R.

    2016-03-01

    Nanostructured Al-doped Zinc oxide (ZnO) thin films were deposited on glass substrate by chemical bath deposition (CBD) using aqueous zinc nitrate solution and subjected for different characterizations. Effect of Al3+ substitution on the properties of ZnO annealed at 400∘C was studied by XRD and UV-Vis for structural studies, SEM and TEM for surface morphology and DC four probe resistivity measurements for electrical properties. Al3+ substitution does not influence the morphology and well-known peaks related to wurtzite structure of ZnO. Electron microscopy (SEM and TEM) confirms rod shaped Al-doped ZnO nanocrystals with average width of 50nm. The optical band gap determined by UV-Visible spectroscopy was found to be in the range 3.37eV to 3.44eV. An EPR spectrum of AZO reveals peak at g=1.96 is due to shallow donors Zn interstitial. The DC electrical resistivity measurements of Al-doped ZnO show a minimum resistivity of 3.77×10-2Ω-cm. Therefore, these samples have potential use in n-type window layer in optoelectronic devices, organic solar cells, photonic crystals, photo-detectors, light emitting diodes (LEDs), gas sensors and chemical sensors.

  17. Modeling and Experimental Analysis on the Temperature Response of AlN-Film Based SAWRs.

    PubMed

    Chen, Shuo; You, Zheng

    2016-01-01

    The temperature responses of aluminum nitride (AlN) based surface acoustic wave resonator (SAWR) are modeled and tested. The modeling of the electrical performance is based on a modified equivalent circuit model introduced in this work. For SAWR consisting of piezoelectric film and semiconducting substrate, parasitic parameters from the substrate is taken into consideration for the modeling. By utilizing the modified model, the high temperature electrical performance of the AlN/Si and AlN/6H-SiC based SAWRs can be predicted, indicating that a substrate with a wider band gap will lead to a more stable high temperature behavior, which is further confirmed experimentally by high temperature testing from 300 K to 725 K with SAWRs having a wavelength of 12 μm. Temperature responses of SAWR's center frequency are also calculated and tested, with experimental temperature coefficient factors (TCF) of center frequency being -29 ppm/K and -26 ppm/K for the AlN/Si and AlN/6H-SiC based SAWRs, which are close to the predicted values. PMID:27483286

  18. Modeling and Experimental Analysis on the Temperature Response of AlN-Film Based SAWRs.

    PubMed

    Chen, Shuo; You, Zheng

    2016-07-30

    The temperature responses of aluminum nitride (AlN) based surface acoustic wave resonator (SAWR) are modeled and tested. The modeling of the electrical performance is based on a modified equivalent circuit model introduced in this work. For SAWR consisting of piezoelectric film and semiconducting substrate, parasitic parameters from the substrate is taken into consideration for the modeling. By utilizing the modified model, the high temperature electrical performance of the AlN/Si and AlN/6H-SiC based SAWRs can be predicted, indicating that a substrate with a wider band gap will lead to a more stable high temperature behavior, which is further confirmed experimentally by high temperature testing from 300 K to 725 K with SAWRs having a wavelength of 12 μm. Temperature responses of SAWR's center frequency are also calculated and tested, with experimental temperature coefficient factors (TCF) of center frequency being -29 ppm/K and -26 ppm/K for the AlN/Si and AlN/6H-SiC based SAWRs, which are close to the predicted values.

  19. Effect of annealing temperature on the microstructure and optical-electrical properties of Cu-Al-O thin films

    NASA Astrophysics Data System (ADS)

    Zhang, Y. J.; Liu, Z. T.; Zang, D. Y.; Che, X. S.; Feng, L. P.; Bai, X. X.

    2013-12-01

    We have successfully prepared Cu-Al-O thin films on silicon (100) and quartz substrates by radio frequency (RF) magnetron sputtering method. The as-deposited Cu-Al-O film is amorphous in nature and post-annealing treatment in argon ambience results in crystallization of the films and the formation of CuAlO2. The annealing temperature plays an important role in the surface morphology, phase constitution and preferred growth orientation of CuAlO2 phase, thus affecting the properties of the film. The film annealed at 900 °C is mainly composed of CuAlO2 phase and shows smooth surface morphology with well-defined grain boundaries, thus exhibiting the optimum optical-electrical properties with electrical resistivity being 79.7 Ω·cm at room temperature and optical transmittance being 80% in visible region. The direct optical band gaps of the films are found in the range of 3.3-3.8 eV depending on the annealing temperature.

  20. Method for Fabricating Textured High-Haze ZnO:Al Transparent Conduction Oxide Films on Chemically Etched Glass Substrates.

    PubMed

    Park, Hyeongsik; Nam, Sang-Hun; Shin, Myunghun; Ju, Minkyu; Lee, Youn-Jung; Yu, Jung-Hoon; Jung, Junhee; Kim, Sunbo; Ahn, Shihyun; Boo, Jin-Hyo; Yi, Junsin

    2016-05-01

    We developed a technique for forming textured aluminum-doped zinc oxide (ZnO:Al) transparent conductive oxide (TCO) films on glass substrates, which were etched using a mixture of hydrofluoric (HF) and hydrochloric (HCl) acids. The etching depth and surface roughness increased with an increase in the HF content and the etching time. The HF-based residues produced insoluble hexafluorosilicate anion- and oxide impurity-based semipermeable films, which reduced the etching rate. Using a small amount of HCl dissolved the Ca compounds, helping to fragment the semipermeable film. This formed random, complex structures on the glass substrates. The angled deposition of three layers of ZnO:Al led to the synthesis of multiscaled ZnO:Al textures on the glass substrates. The proposed approach resulted in textured ZnO:Al TCO films that exhibited high transmittance (-80%) and high haze (> 40%) values over wavelengths of 400-1000 nm, as well as low sheet resistances (< 18 Ω/sq)..Si tandem solar cells based on the ZnO:Al textured TCO films exhibited photocurrents and cell efficiencies that were 40% higher than those of cells with conventional TCO films. PMID:27483840

  1. Promising hydrogen storage properties and potential applications of Mg-Al-Pd trilayer films under mild conditions.

    PubMed

    Xin, Gongbiao; Yang, Junzhi; Zhang, Guoqing; Zheng, Jie; Li, Xingguo

    2012-10-14

    We prepared a series of nano-sized Mg-Al-Pd trilayer films and investigated their hydrogen storage properties under mild conditions. Results showed that Al 1 nm sample had the best absorption kinetics and excellent optical properties at room temperature, making it a promising candidate for hydrogen sensors and smart windows. PMID:22692459

  2. Sol-gel derived Al-Ga co-doped transparent conducting oxide ZnO thin films

    NASA Astrophysics Data System (ADS)

    Serrao, Felcy Jyothi; Sandeep, K. M.; Bhat, Shreesha; Dharmaprakash, S. M.

    2016-05-01

    Transparent conducting ZnO doped with Al, Ga and co-doped Al and Ga (1:1) (AGZO) thin films were grown on glass substrates by cost effective sol-gel spin coating method. The XRD results showed that all the films are polycrystalline in nature and highly textured along the (002) plane. Enhanced grain size was observed in the case of AGZO thin films. The transmittance of all the films was more than 83% in the visible region of light. The electrical properties such as carrier concentration and mobility values are increased in case of AGZO compared to that of Al and Ga doped ZnO thin films. The minimum resistivity of 2.54 × 10-3 Ω cm was observed in AGZO thin film. The co-doped AGZO thin films exhibited minimum resistivity and high optical transmittance, indicate that co-doped ZnO thin films could be used in transparent electronics mainly in display applications.

  3. Insitu grown superhydrophobic Zn-Al layered double hydroxides films on magnesium alloy to improve corrosion properties

    NASA Astrophysics Data System (ADS)

    Zhou, Meng; Pang, Xiaolu; Wei, Liang; Gao, Kewei

    2015-05-01

    A hierarchical superhydrophobic zinc-aluminum layered double hydroxides (Zn-Al LDHs) film has been fabricated on a magnesium alloy substrate via a facile hydrothermal crystallization method following chemical modification. The characteristics of the films were investigated by X-ray diffraction (XRD), scanning electronic microscope (SEM), and energy dispersive spectroscopy (EDS). XRD patterns and SEM images showed that the micro/nanoscale hierarchical LDHs film surfaces composed of ZnO nanorods and Zn-Al LDHs nanowalls structures. The static contact angle (CA) for the prepared surfaces was observed at around 165.6°. The corrosion resistance of the superhydrophobic films was estimated by electrochemical impedance spectroscopy (EIS) and potentiondynamic polarization measurement. EIS and polarization measurements revealed that the superhydrophobic Zn-Al LDHs coated magnesium alloy had better corrosion resistance in neutral 3.5 wt.% NaCl solution.

  4. Layer-by-Layer Growth of InAlN Films on ZnO(0001) Substrates at Room Temperature

    NASA Astrophysics Data System (ADS)

    Kajima, Tomofumi; Kobayashi, Atsushi; Shimomoto, Kazuma; Ueno, Kohei; Fujii, Tomoaki; Ohta, Jitsuo; Fujioka, Hiroshi; Oshima, Masaharu

    2010-02-01

    We have grown In-rich InxAl1-xN (x = 0.6-0.7) films on nearly lattice-matched ZnO(0001) substrates at various temperatures ranging from room temperature (RT) to 600 °C by the use of pulsed laser deposition and investigated their structural properties. Grazing-incidence X-ray reflection and X-ray diffraction revealed that films grown at RT are composed of single-phase InAlN and possess atomically flat surfaces and abrupt interfaces. In addition, we have found that RT-growth of InAlN films on ZnO(0001) surfaces proceeds in a layer-by-layer mode from the initial stages of film growth.

  5. Bending strain-tunable magnetic anisotropy in Co2FeAl Heusler thin film on KaptonxAE

    NASA Astrophysics Data System (ADS)

    Gueye, M.; Wague, B. M.; Zighem, F.; Belmeguenai, M.; Gabor, M. S.; Petrisor, T.; Tiusan, C.; Mercone, S.; Faurie, D.

    2014-08-01

    Bending effect on the magnetic anisotropy in 20 nm Co2FeAl Heusler thin film grown on Kapton® has been studied by ferromagnetic resonance and glued on curved sample carrier with various radii. The results reported in this Letter show that the magnetic anisotropy is drastically changed in this system by bending the thin films. This effect is attributed to the interfacial strain transmission from the substrate to the film and to the magnetoelastic behavior of the Co2FeAl film. Moreover, two approaches to determine the in-plane magnetostriction coefficient of the film, leading to a value that is close to λCFA= 14 × 10-6, have been proposed.

  6. Magneto-transport properties of oriented Mn{sub 2}CoAl films sputtered on thermally oxidized Si substrates

    SciTech Connect

    Xu, G. Z.; Du, Y.; Zhang, X. M.; Liu, E. K.; Wang, W. H. Wu, G. H.; Zhang, H. G.

    2014-06-16

    Spin gapless semiconductors are interesting family of materials by embracing both magnetism and semiconducting due to their unique band structure. Its potential application in future spintronics requires realization in thin film form. In this Letter, we report fabrication and transport properties of spin gapless Mn{sub 2}CoAl films prepared on thermally oxidized Si substrates by magnetron sputtering deposition. The films deposited at 673 K are well oriented to (001) direction and display a uniform-crystalline surface. Magnetotransport measurements on the oriented films reveal a semiconducting-like resistivity, small anomalous Hall conductivity, and linear magnetoresistance representative of the transport signatures of spin gapless semiconductors. The magnetic properties of the films have also been investigated and compared to that of bulk Mn{sub 2}CoAl, showing small discrepancy induced by the composition deviation.

  7. Current-Voltage Characteristics and Deposition of AlTiN Thin Films by High Power Impulse Magnetron Sputtering Process

    NASA Astrophysics Data System (ADS)

    Wu, Wan-Yu; Su, Amei; Liu, Yawei; Yeh, Chi-Ming; Chen, Wei-Chih; Chang, Chi-Lung

    2015-09-01

    In this study, AlTiN thin films were deposited using a high power impulse magnetron sputtering (HiPIMS) process under a unipolar mode. The AlTi target had a composition of 70 at% Al and 30 at% Ti. Nitrogen was used as the reactive gas to deposite AlTiN thin films along with Ar gas at a working pressure of 1 ×10-3 torr. The target voltage and current were measured at different conditions including various duty cycles from 1 to 5%, pulse durations from 50 to 400 μs, target powers from 0.6 to 1.8 kW, and N2/Ar ratios from 0 to 1. Depending on the deposition condition, peak powers in the range of 104 to 105 W were observed. The effect of deposition conditions were discussed. For film deposition, the pulse duration and the duty cycle were fixed at 100 μs and 3%, respectively. A fixed bias of -150 V was applied to the substrates, including Si wafer, 304 stainless steel, and tungsten carbide.It was found that the nitrogen content increases with the N2/Ar ratio and then saturates. With increasing target power, a higher N2/Ar ratio was required for the AlTiN thin films to have a better mechanical properties. Meanwhile, the hardness of the AlTiN thin films also increases with the target power. The highest hardness of 41 GPa was observed as the N2/Ar ratio was 0.9 and the power was 1.8 kW. It was found that the amount Al-N bonding and the distribution of AlN phase within the AlTiN thin films play an important role in determining the mechanical properties.

  8. Enhancement in the excitonic spontaneous emission rates for Si nanocrystal multi-layers covered with thin films of Au, Ag, and Al.

    PubMed

    Estrin, Y; Rich, D H; Rozenfeld, N; Arad-Vosk, N; Ron, A; Sa'ar, A

    2015-10-30

    The enhancement in the spontaneous emission rate (SER) for Ag, Au, and Al films on multilayer Si nanocrystals (SiNCs) was probed with time-resolved cathodoluminescence (CL). The SiNCs were grown on Si(100) using plasma enhanced chemical vapor deposition. Electron-hole pairs were generated in the metal-covered SiNCs by injecting a pulsed high-energy electron beam through the thin metal films, which is found to be an ideal method of excitation for plasmonic quantum heterostructures and nanostructures that are opaque to laser or light excitation. Spatially, spectrally, and temporally resolved CL was used to measure the excitonic lifetime of the SiNCs in metal-covered and bare regions of the same samples. The observed enhancement in the SER for the metal-covered SiNCs, relative to the SER for the bare sample, is attributed to a coupling of the SiNC excitons with surface plasmon polaritons (SPPs) of the thin metal films. A maximum SER enhancement of ∼2.0, 1.4 and 1.2 was observed for the Ag, Au, and Al films, respectively, at a temperature of 55 K. The three chosen plasmonic metals of Ag, Au, and Al facilitate an interesting comparison of the exciton-SPP coupling for metal films that exhibit varying differences between the surface plasmon energy, ω(sp), and the SiNC excitonic emission energy. A modeling of the temperature dependence of the Purcell enhancement factor, Fp, was performed and included the temperature dependence of the dielectric properties of the metals. PMID:26436289

  9. Enhancement in the excitonic spontaneous emission rates for Si nanocrystal multi-layers covered with thin films of Au, Ag, and Al

    NASA Astrophysics Data System (ADS)

    Estrin, Y.; Rich, D. H.; Rozenfeld, N.; Arad-Vosk, N.; Ron, A.; Sa'ar, A.

    2015-10-01

    The enhancement in the spontaneous emission rate (SER) for Ag, Au, and Al films on multilayer Si nanocrystals (SiNCs) was probed with time-resolved cathodoluminescence (CL). The SiNCs were grown on Si(100) using plasma enhanced chemical vapor deposition. Electron-hole pairs were generated in the metal-covered SiNCs by injecting a pulsed high-energy electron beam through the thin metal films, which is found to be an ideal method of excitation for plasmonic quantum heterostructures and nanostructures that are opaque to laser or light excitation. Spatially, spectrally, and temporally resolved CL was used to measure the excitonic lifetime of the SiNCs in metal-covered and bare regions of the same samples. The observed enhancement in the SER for the metal-covered SiNCs, relative to the SER for the bare sample, is attributed to a coupling of the SiNC excitons with surface plasmon polaritons (SPPs) of the thin metal films. A maximum SER enhancement of ˜2.0, 1.4 and 1.2 was observed for the Ag, Au, and Al films, respectively, at a temperature of 55 K. The three chosen plasmonic metals of Ag, Au, and Al facilitate an interesting comparison of the exciton-SPP coupling for metal films that exhibit varying differences between the surface plasmon energy, ωsp, and the SiNC excitonic emission energy. A modeling of the temperature dependence of the Purcell enhancement factor, Fp, was performed and included the temperature dependence of the dielectric properties of the metals.

  10. Enhancement in the excitonic spontaneous emission rates for Si nanocrystal multi-layers covered with thin films of Au, Ag, and Al.

    PubMed

    Estrin, Y; Rich, D H; Rozenfeld, N; Arad-Vosk, N; Ron, A; Sa'ar, A

    2015-10-30

    The enhancement in the spontaneous emission rate (SER) for Ag, Au, and Al films on multilayer Si nanocrystals (SiNCs) was probed with time-resolved cathodoluminescence (CL). The SiNCs were grown on Si(100) using plasma enhanced chemical vapor deposition. Electron-hole pairs were generated in the metal-covered SiNCs by injecting a pulsed high-energy electron beam through the thin metal films, which is found to be an ideal method of excitation for plasmonic quantum heterostructures and nanostructures that are opaque to laser or light excitation. Spatially, spectrally, and temporally resolved CL was used to measure the excitonic lifetime of the SiNCs in metal-covered and bare regions of the same samples. The observed enhancement in the SER for the metal-covered SiNCs, relative to the SER for the bare sample, is attributed to a coupling of the SiNC excitons with surface plasmon polaritons (SPPs) of the thin metal films. A maximum SER enhancement of ∼2.0, 1.4 and 1.2 was observed for the Ag, Au, and Al films, respectively, at a temperature of 55 K. The three chosen plasmonic metals of Ag, Au, and Al facilitate an interesting comparison of the exciton-SPP coupling for metal films that exhibit varying differences between the surface plasmon energy, ω(sp), and the SiNC excitonic emission energy. A modeling of the temperature dependence of the Purcell enhancement factor, Fp, was performed and included the temperature dependence of the dielectric properties of the metals.

  11. Magnetic microstructure and magnetotransport in Co2FeAl Heusler compound thin films

    NASA Astrophysics Data System (ADS)

    Weiler, Mathias; Czeschka, Franz D.; Brandlmaier, Andreas; Imort, Inga-Mareen; Reiss, Günter; Thomas, Andy; Woltersdorf, Georg; Gross, Rudolf; Goennenwein, Sebastian T. B.

    2011-01-01

    We correlate simultaneously recorded magnetotransport and spatially resolved magneto-optical Kerr effect (MOKE) data in Co2FeAl Heusler compound thin films micropatterned into Hall bars. Room temperature MOKE images reveal the nucleation and propagation of domains in an externally applied magnetic field and are used to extract a macrospin corresponding to the mean magnetization direction in the Hall bar. The anisotropic magnetoresistance calculated using this macrospin is in excellent agreement with magnetoresistance measurements. This suggests that the magnetotransport in Heusler compounds can be adequately simulated using simple macrospin models, while the magnetoresistance contribution due to domain walls is of negligible importance.

  12. Atomic-scale microstructure underneath nanoindentation in Al-Cr-N ceramic films

    SciTech Connect

    Zhuang, Chunqiang Li, Zhipeng; Lin, Songsheng

    2015-12-15

    In this work, Al-Cr-N ceramic films deformed by nanoindentation were peeled off from silicon substrates and their atomic-scale microstructures underneath the indenter were investigated by high resolution transmission electron microscope (HR-TEM). Dislocations were formed underneath the indenter and they accumulated along nano-grain boundaries. The accumulative dislocations triggered the crack initiation along grain boundaries, and further resulted in the crack propagation. Dislocations were also observed in nano-grains on the lateral contact area. A model was proposed to describe the variation of microstructures under nanoindentation.

  13. Quantum stabilities and growth modes of thin metal films: Unsupported and NiAl-supported Ag(1 1 0) and Ag(1 0 0)

    NASA Astrophysics Data System (ADS)

    Han, Yong; Evans, J. W.; Liu, Da-Jiang

    2008-07-01

    We present density functional theory (DFT) analyses of the stability of Ag thin films versus film thicknesses for various surface orientations. We include benchmark results for freestanding films, but consider in detail Ag(1 1 0) films supported on a NiAl(1 1 0) substrate, and Ag(1 0 0) films supported on a NiAl(1 0 0) substrate. The supported films exhibit an almost perfect lattice-match between film and substrate surface unit cells, so one can assess film stability in the absence of significant lateral mismatch strain. We also provide a characterization of film growth modes for these NiAl-supported Ag films based on DFT results for the relevant energetics.

  14. Charge injection properties of iridium oxide films produced on Ti-6Al-4V alloy substrates by ion-beam mixing techniques

    SciTech Connect

    Williams, J.M. ); Lee, I-S.; Buchanan, R.A. )

    1991-10-01

    The charge injection capabilities of iridium oxide films, as produced on Ti6Al-4V alloy substrates by ion beam mixing techniques, have been investigated. Iridium oxide is a valence change oxide, and therefore has high values of charge injection density upon voltage cycling in electrolytes. Because of this property, iridium oxide films are useful as working elements in neural prostheses. Iridium films of three thicknesses, produced by sputter deposition followed by ion beam mixing, were tested in cyclic voltammetry out to 1000 cycles or more. Two surface preparations, mechanical polishing and an acid passivation treatment, were also used as controls. Surface analysis was primarily by Rutherford backscattering spectrometry. Both the ion- beam mixing and the acid pretreatment increased the lifetimes of films, in comparison with the mechanically polished standards. Reductions in charge injection capability, when they occurred, were attributed to loss of Ir from the films, and there was a close correlation between the charge injection density and the Ir inventory. 13 refs., 5 figs.

  15. Effect of [Al] and [In] molar ratio in solutions on the growth and microstructure of electrodeposition Cu(In,Al)Se2 films

    NASA Astrophysics Data System (ADS)

    Huang, Kuo-Chan; Liu, Chien-Lin; Hung, Pin-Kun; Houng, Mau-Phon

    2013-05-01

    In this paper, the cyclic voltammetric studies were used to realize the element's reduction potential and chemical reaction mechanism for presuming the formation routes of quaternary Cu(In,Al)Se2 crystals. Thereafter, the prior adjustment of deposited potential from -0.6 V to -1.0 V can be identified a suitable potential as co-electrodeposition. The material characteristics of Cu(In,Al)Se2 films are dominated by the percentage of aluminum content. Thus, the influence of aluminum and indium concentrations in solutions on the percentage composition, surface morphology, structural and crystal properties, and optical energy band gap of Cu(In,Al)Se2 films were investigated. Energy dispersive X-ray spectroscopy (EDS) indicated that the ratio of Al to (Al + In) in Cu(In,Al)Se2 films varied from 0.21 to 0.42 when adjusting aluminum and indium concentrations in solutions. Scanning electron microscopy (SEM) shows that the surface morphology changed from round-like structures into cauliflower-like structures and became rough when the aluminum concentration increased and indium concentration decreased in solutions. X-ray diffraction (XRD) patterns revealed three preferred growth orientations along the (1 1 2), (2 0 4/2 2 0), and (1 1 6/3 1 2) planes for all species. The (αhυ)2 versus hυ plots (UV-Visible) shows that the optical energy band gap of the Cu(In,Al)Se2 films can be successfully controlled from 1.17 eV to 1.48 eV by adjusting the aluminum and indium concentrations. Furthermore, the shift of the (1 1 2) peak in the XRD patterns and variation of optical band gap are evidence that the incorporation of aluminum atoms into the crystallitic CuInSe2 forms Cu(In,Al)Se2 crystals.

  16. Perpendicular magnetic anisotropy of CoPt AlN composite film with nano-fiber structure

    NASA Astrophysics Data System (ADS)

    Chen, C. C.; Toyoshima, H.; Hashimoto, M.; Shi, J.; Nakamura, Y.

    2005-06-01

    Co Pt AlN films were prepared by sputtering a Co Pt Al composite target in Ar+N2 atmosphere. Upon thermal annealing at elevated temperatures, fcc CoPt and a-AlN are formed in the films as phases separated from one other. Both phases develop as fiber-like columnar grains vertical to the substrate and with their lateral size less than 10 nm. Because of the shape anisotropy of the magnetic fiber grains the CoPt AlN film shows a perpendicular magnetic anisotropy at a thickness equal to or larger than about 25 nm while the Co TiN [6] and CoPt TiO2 [11] films do not unless their thicknesses reach 50 and 100 nm, respectively. This suggests that both the shape anisotropy of the CoPt magnetic fiber grains and their mutual separation in an a-AlN medium work more effectively in the formation with the perpendicular magnetic anisotropy. Such a perpendicular magnetic anisotropy of the CoPt AlN film associated with the nano-scale feature makes it a very promising candidate for future recording media with ultra-high area density.

  17. Structural and optical properties of low temperature grown AlN films on sapphire using helicon sputtering system

    SciTech Connect

    Chen, Meei-Ru; Chen, Hou-Guang; Kao, Hui-Ling Wu, Ming-Guei; Tzou, An-Jye; Chen, Jyh Shin; Chou, Hsiung

    2015-05-15

    AlN thin films have been deposited directly on c-plane sapphire substrates at low temperatures by a helicon sputtering system. The structural quality of AlN epitaxial films was characterized by x-ray diffractometry and transmission electron microscopy. The films exhibit smooth surface with root-mean-square roughness as small as 0.7 nm evaluated by atomic force microscope. The optical transmittance spectra show a steep absorption edge at the wavelength of 200 nm and a high transmittance of over 80% in the visible range. The band-edge transition (6.30 eV) of AlN film was observed in the cathodoluminescence spectrum recorded at 11 K. The spectral response of metal–semiconductor–metal photodetectors constructed with AlN/sapphire reveals the peak responsivity at 200 nm and a UV/visible rejection ratio of about two orders of magnitude. The results of this low temperature deposition suggest the feasibility of the epitaxial growth of AlN on sapphire substrates and the incorporation of the AlN films in the surface acoustic wave devices and the optical devices at deep ultraviolet region.

  18. Tunable thermal conductivity of thin films of polycrystalline AlN by structural inhomogeneity and interfacial oxidation.

    PubMed

    Jaramillo-Fernandez, J; Ordonez-Miranda, J; Ollier, E; Volz, S

    2015-03-28

    The effect of the structural inhomogeneity and oxygen defects on the thermal conductivity of polycrystalline aluminum nitride (AlN) thin films deposited on single-crystal silicon substrates is experimentally and theoretically investigated. The influence of the evolution of crystal structure, grain size, and out-of plane disorientation along the cross plane of the films on their thermal conductivity is analyzed. The impact of oxygen-related defects on thermal conduction is studied in AlN/AlN multilayered samples. Microstructure, texture, and grain size of the films were characterized by X-ray diffraction and scanning and transmission electron microscopy. The measured thermal conductivity obtained with the 3-omega technique for a single and multiple layers of AlN is in fairly good agreement with the theoretical predictions of our model, which is developed by considering a serial assembly of grain distributions. An effective thermal conductivity of 5.92 W m(-1) K(-1) is measured for a 1107.5 nm-thick multilayer structure, which represents a reduction of 20% of the thermal conductivity of an AlN monolayer with approximately the same thickness, due to oxygen impurities at the interface of AlN layers. Our results show that the reduction of the thermal conductivity as the film thickness is scaled down, is strongly determined by the structural inhomogeneities inside the sputtered films. The origin of this non-homogeneity and the effect on phonon scattering are also discussed.

  19. The thickness-dependent dynamic magnetic property of Co2FeAl films grown by molecular beam epitaxy

    NASA Astrophysics Data System (ADS)

    Qiao, Shuang; Nie, Shuaihua; Zhao, Jianhua; Zhang, Xinhui

    2014-10-01

    Co2FeAl films with different thickness were prepared at different temperature by molecular beam epitaxy. Their dynamic magnetic property was studied by the time-resolved magneto-optical Kerr effect measurements. It is observed that the intrinsic damping factor of Co2FeAl for [100] orientation is not related to the film's thickness and magnetic anisotropy as well as temperature at high-field regime, but increases with structural disorder of Co2FeAl. The dominant contribution from the inhomogeneous magnetic anisotropy is revealed to be responsible for the observed extremely nonlinear and drastic field-dependent damping factors at low-field regime.

  20. Polarity-inverted ScAlN film growth by ion beam irradiation and application to overtone acoustic wave (000-1)/(0001) film resonators

    SciTech Connect

    Suzuki, Masashi; Yanagitani, Takahiko; Odagawa, Hiroyuki

    2014-04-28

    Polarity inversion in wurtzite film is generally achieved by the epitaxial growth on a specific under-layer. We demonstrate polarity inversion of c-axis oriented ScAlN films by substrate ion beam irradiation without using buffer layer. Substrate ion beam irradiation was induced by either sputtering a small amount of oxide (as a negative ion source) onto the cathode or by applying a RF bias to the substrate. Polarity of the films was determined by a press test and nonlinear dielectric measurement. Second overtone thickness extensional mode acoustic resonance and suppression of fundamental mode resonance, indicating complete polarity inversion, were clearly observed in bilayer highly oriented (000-1)/(0001) ScAlN film.

  1. Point defect-induced magnetic properties in CuAlO2 films without magnetic impurities

    NASA Astrophysics Data System (ADS)

    Luo, Jie; Lin, Yow-Jon

    2016-03-01

    The magnetic properties of the undoped CuAlO2 thin films with different compositions are examined. In order to understand this phenomenon and to determine the correlation between the magnetic and electrical properties and point defects, the X-ray photoelectron spectroscopy and Hall effect measurements are performed. Combining with Hall effect, X-ray photoelectron spectroscopy and alternating gradient magnetometer measurements, a direct link between the hole concentration, magnetism, copper vacancy (VCu), oxygen vacancy, and interstitial oxygen (Oi) is established. It is shown that an increase in the number of acceptors (VCu and Oi) leads to an increase in the hole concentration. Based on theoretical and experimental investigations, the authors confirmed that both acceptors (VCu and Oi) in CuAlO2 could induce the ferromagnetic behavior at room temperature.

  2. Evaluation of Gafchromic EBT-XD film, with comparison to EBT3 film, and application in high dose radiotherapy verification.

    PubMed

    Palmer, Antony L; Dimitriadis, Alexis; Nisbet, Andrew; Clark, Catharine H

    2015-11-21

    There is renewed interest in film dosimetry for the verification of dose delivery of complex treatments, particularly small fields, compared to treatment planning system calculations. A new radiochromic film, Gafchromic EBT-XD, is available for high-dose treatment verification and we present the first published evaluation of its use. We evaluate the new film for MV photon dosimetry, including calibration curves, performance with single- and triple-channel dosimetry, and comparison to existing EBT3 film. In the verification of a typical 25 Gy stereotactic radiotherapy (SRS) treatment, compared to TPS planned dose distribution, excellent agreement was seen with EBT-XD using triple-channel dosimetry, in isodose overlay, maximum 1.0 mm difference over 200-2400 cGy, and gamma evaluation, mean passing rate 97% at 3% locally-normalised, 1.5 mm criteria. In comparison to EBT3, EBT-XD gave improved evaluation results for the SRS-plan, had improved calibration curve gradients at high doses, and had reduced lateral scanner effect. The dimensions of the two films are identical. The optical density of EBT-XD is lower than EBT3 for the same dose. The effective atomic number for both may be considered water-equivalent in MV radiotherapy. We have validated the use of EBT-XD for high-dose, small-field radiotherapy, for routine QC and a forthcoming multi-centre SRS dosimetry intercomparison. PMID:26512917

  3. Magnetic damping and spin polarization of highly ordered B2 Co{sub 2}FeAl thin films

    SciTech Connect

    Cui, Yishen; Lu, Jiwei; Schäfer, Sebastian; Khodadadi, Behrouz; Mewes, Tim; Osofsky, Mike; Wolf, Stuart A.

    2014-08-21

    Epitaxial Co{sub 2}FeAl films were synthesized using the Biased Target Ion Beam Deposition technique. Post annealing yielded Co{sub 2}FeAl films with an improved B2 chemical ordering. Both the magnetization and the Gilbert damping parameter were reduced with increased B2 ordering. A low damping parameter, ∼0.002, was attained in B2 ordered Co{sub 2}FeAl films without the presence of the L2{sub 1} Heusler phase, which suggests that the B2 structure is sufficient for providing low damping in Co{sub 2}FeAl. The spin polarization was ∼53% and was insensitive to the chemical ordering.

  4. X-ray Reciprocal Space Mapping of Graded Al x Ga1 - x N Films and Nanowires.

    PubMed

    Stanchu, Hryhorii V; Kuchuk, Andrian V; Kladko, Vasyl P; Ware, Morgan E; Mazur, Yuriy I; Zytkiewicz, Zbigniew R; Belyaev, Alexander E; Salamo, Gregory J

    2016-12-01

    The depth distribution of strain and composition in graded Al x Ga1 - x N films and nanowires (NWs) are studied theoretically using the kinematical theory of X-ray diffraction. By calculating [Formula: see text] reciprocal space maps (RSMs), we demonstrate significant differences in the intensity distributions from graded Al x Ga1 - x N films and NWs. We attribute these differences to relaxation of the substrate-induced strain on the NWs free side walls. Finally, we demonstrate that the developed X-ray reciprocal space map model allows for reliable depth profiles of strain and Al composition determination in both Al x Ga1 - x N films and NWs.

  5. AlN thin films grown on epitaxial 3C-SiC (100) for piezoelectric resonant devices

    SciTech Connect

    Lin, Chih-Ming; Senesky, Debbie G.; Pisano, Albert P.; Lien, Wei-Cheng; Felmetsger, Valery V.; Hopcroft, Matthew A.

    2010-10-04

    Highly c-axis oriented heteroepitaxial aluminum nitride (AlN) films were grown on epitaxial cubic silicon carbide (3C-SiC) layers on Si (100) substrates using alternating current reactive magnetron sputtering at temperatures between approximately 300-450 deg. C. The AlN films were characterized by x-ray diffraction, scanning electron microscope, and transmission electron microscopy. A two-port surface acoustic wave device was fabricated on the AlN/3C-SiC/Si composite structure, and an expected Rayleigh mode exhibited a high acoustic velocity of 5200 m/s. The results demonstrate the potential of utilizing AlN films on epitaxial 3C-SiC layers to create piezoelectric resonant devices.

  6. Enhanced hardness in epitaxial TiAlScN alloy thin films and rocksalt TiN/(Al,Sc)N superlattices

    SciTech Connect

    Saha, Bivas; Lawrence, Samantha K.; Bahr, David F.; Schroeder, Jeremy L.; Birch, Jens; Sands, Timothy D.

    2014-10-13

    High hardness TiAlN alloys for wear-resistant coatings exhibit limited lifetimes at elevated temperatures due to a cubic-AlN to hexagonal-AlN phase transformation that leads to decreasing hardness. We enhance the hardness (up to 46 GPa) and maximum operating temperature (up to 1050 °C) of TiAlN-based coatings by alloying with scandium nitride to form both an epitaxial TiAlScN alloy film and epitaxial rocksalt TiN/(Al,Sc)N superlattices on MgO substrates. The superlattice hardness increases with decreasing period thickness, which is understood by the Orowan bowing mechanism of the confined layer slip model. These results make them worthy of additional research for industrial coating applications.

  7. Atomic force microscopy identification of Al-sites on ultrathin aluminum oxide film on NiAl(110).

    PubMed

    Li, Yan Jun; Brndiar, J; Naitoh, Y; Sugawara, Y; Štich, I

    2015-12-18

    Ultrathin alumina film formed by oxidation of NiAl(110) was studied by non-contact atomic force microscopy in an ultra high vacuum at room temperature with the quest to provide the ultimate understanding of structure and bonding of this complicated interface. Using a very stiff Si cantilever with significantly improved resolution, we have obtained images of this system with unprecedented resolution, surpassing all the previous results. In particular, we were able to unambiguously resolve all the differently coordinated aluminum atoms. This is of importance as the previous images provide very different image patterns, which cannot easily be reconciled with the existing structural models. Experiments are supported by extensive density functional theory modeling. We find that the system is strongly ionic and the atomic force microscopy images can reliably be understood from the electrostatic potential which provides an image model in excellent agreement with the experiments. However, in order to resolve the finer contrast features we have proposed a more sophisticated model based on more realistic approximants to the incommensurable alumina interface.

  8. Atomic force microscopy identification of Al-sites on ultrathin aluminum oxide film on NiAl(110).

    PubMed

    Li, Yan Jun; Brndiar, J; Naitoh, Y; Sugawara, Y; Štich, I

    2015-12-18

    Ultrathin alumina film formed by oxidation of NiAl(110) was studied by non-contact atomic force microscopy in an ultra high vacuum at room temperature with the quest to provide the ultimate understanding of structure and bonding of this complicated interface. Using a very stiff Si cantilever with significantly improved resolution, we have obtained images of this system with unprecedented resolution, surpassing all the previous results. In particular, we were able to unambiguously resolve all the differently coordinated aluminum atoms. This is of importance as the previous images provide very different image patterns, which cannot easily be reconciled with the existing structural models. Experiments are supported by extensive density functional theory modeling. We find that the system is strongly ionic and the atomic force microscopy images can reliably be understood from the electrostatic potential which provides an image model in excellent agreement with the experiments. However, in order to resolve the finer contrast features we have proposed a more sophisticated model based on more realistic approximants to the incommensurable alumina interface. PMID:26588437

  9. Electrochemical deposition and microstructural characterization of AlCrFeMnNi and AlCrCuFeMnNi high entropy alloy thin films

    NASA Astrophysics Data System (ADS)

    Soare, V.; Burada, M.; Constantin, I.; Mitrică, D.; Bădiliţă, V.; Caragea, A.; Târcolea, M.

    2015-12-01

    Al-Cr-Fe-Mn-Ni and Al-Cr-Cu-Fe-Mn-Ni high entropy alloy thin films were prepared by potentiostatic electrodeposition and the microstructure of the deposits was investigated. The thin films were co-deposited in an electrolyte based on a DMF (N,N-dimethylformamide)-CH3CN (acetonitrile) organic compound. The energy dispersive spectrometry investigation (EDS) indicated that all the five respectively six elements were successfully co-deposited. The scanning electron microscopy (SEM) analysis revealed that the film consists of compact and uniform particles with particle sizes of 500 nm to 4 μm. The X-ray diffractometry (XRD) patterns indicated that the as-deposited thin films were amorphous. Body-centered-cubic (BCC) structures were identified by XRD after the films were annealed at various temperatures under inert Ar atmosphere. The alloys adhesion on the substrate was determined by the scratch-testing method, with higher values obtained for the Al-Cr-Cu-Fe-Mn-Ni alloy.

  10. Far-infrared transmission in GaN, AlN, and AlGaN thin films grown by molecular beam epitaxy

    SciTech Connect

    Ibanez, J.; Hernandez, S.; Alarcon-Llado, E.; Cusco, R.; Artus, L.; Novikov, S. V.; Foxon, C. T.; Calleja, E.

    2008-08-01

    We present a far-infrared transmission study on group-III nitride thin films. Cubic GaN and AlN layers and c-oriented wurtzite GaN, AlN, and Al{sub x}Ga{sub 1-x}N (x<0.3) layers were grown by molecular beam epitaxy on GaAs and Si(111) substrates, respectively. The Berreman effect allows us to observe simultaneously the transverse optic and the longitudinal optic phonons of both the cubic and the hexagonal films as transmission minima in the infrared spectra acquired with obliquely incident radiation. We discuss our results in terms of the relevant electromagnetic theory of infrared transmission in cubic and wurtzite thin films. We compare the infrared results with visible Raman-scattering measurements. In the case of films with low scattering volumes and/or low Raman efficiencies and also when the Raman signal of the substrate material obscures the weaker peaks from the nitride films, we find that the Berreman technique is particularly useful to complement Raman spectroscopy.

  11. Effects of NIR annealing on the characteristics of al-doped ZnO thin films prepared by RF sputtering

    PubMed Central

    2012-01-01

    Aluminum-doped zinc oxide (AZO) thin films have been deposited on glass substrates by employing radio frequency (RF) sputtering method for transparent conducting oxide applications. For the RF sputtering process, a ZnO:Al2O3 (2 wt.%) target was employed. In this paper, the effects of near infrared ray (NIR) annealing technique on the structural, optical, and electrical properties of the AZO thin films have been researched. Experimental results showed that NIR annealing affected the microstructure, electrical resistance, and optical transmittance of the AZO thin films. X-ray diffraction analysis revealed that all films have a hexagonal wurtzite crystal structure with the preferentially c-axis oriented normal to the substrate surface. Optical transmittance spectra of the AZO thin films exhibited transmittance higher than about 80% within the visible wavelength region, and the optical direct bandgap (Eg) of the AZO films was increased with increasing the NIR energy efficiency. PMID:22673232

  12. Effect of substrate temperature on the properties of transparent conductive ZnO:Al thin films prepared by RF sputtering

    SciTech Connect

    Deng Xueran; Deng Hong; Wei Min; Chen Jinju; Chen Han

    2011-09-15

    Transparent conductive ZnO:Al thin films were successfully deposited on glass substrates via radio frequency sputtering with a ceramic target in ambient argon. X-ray diffraction, profilometry, Hall-effect measurement, and spectrophotometry were employed to investigate the structural, electrical, and optical properties of films. The electrical and optical properties were found to be strongly dependent on the crystalline quality, grain size, and thickness of the films. X-ray diffraction spectra indicated that the crystalline quality of the films improved and grains became larger with increasing substrate temperature. Transmission spectra revealed that films possessed a higher transmittance in the visible range with an increase of the substrate temperature, but the band gap did not broaden obviously. Films with a resistivity of about 2.66 x 10{sup -4}{Omega} cm and an average transmittance above 90% in the visible range were obtained at the optimum temperature of 450 deg. C.

  13. Comparison of topotactic fluorination methods for complex oxide films

    SciTech Connect

    Moon, E. J. Choquette, A. K.; Huon, A.; Kulesa, S. Z.; May, S. J.; Barbash, D.

    2015-06-01

    We have investigated the synthesis of SrFeO{sub 3−α}F{sub γ} (α and γ ≤ 1) perovskite films using topotactic fluorination reactions utilizing poly(vinylidene fluoride) as a fluorine source. Two different fluorination methods, a spin-coating and a vapor transport approach, were performed on as-grown SrFeO{sub 2.5} films. We highlight differences in the structural, compositional, and optical properties of the oxyfluoride films obtained via the two methods, providing insight into how fluorination reactions can be used to modify electronic and optical behavior in complex oxide heterostructures.

  14. Skin Dosimetry in Radiotherapy of Breast Cancer: a Comparison between EBT and EBT3 Radiochromic Films

    PubMed Central

    Bahreyni Toosi, M.T.; Mohamadian, N.; Ghorbani, M.; Khorshidi, F.; Akbari, F.; Knaup, C.

    2016-01-01

    Objective Radiochromic EBT3 film is a later generation of radiochromic films. The aim of this study is to compare EBT and EBT3 radiochromic films in radiotherapy fields of breast cancer. Methods A RANDO phantom was irradiated by a 6 MV Siemens Primus linac with medial and lateral fields of radiotherapy of breast cancer. Dosimetry was performed in various points in the fields using EBT and EBT3 films. Films were scanned by a Microtek color scanner. Dose values from two films in corresponding points were compared. Results In the investigation of calibration, net optical density (NOD) of EBT radiochromic is more than the EBT3 radiochromic film. The highest percentage difference between NODs of two films is related to 0.75 Gy and equals to 14.19%. The lowest value is related to 0.2 Gy dose and is equal to 3.31%. The highest percentage difference between two films on the RANDO phantom in breast cancer fields is 13.51% and the minimum value is equal to 0.33%. Conclusion From the comparison between the two films, most of the points show differences in dose in the measurements in fields of breast cancer radiotherapy. These differences are attributed to the thickness of the active layers, the overall thickness of the films, and the difference in the calibration fitted functions. The advantage of EBT film over EBT3 is a higher sensitivity; on the other hand EBT3 film allows to use its both sides in the scanning process and it is a new version of this film type. PMID:27672625

  15. Skin Dosimetry in Radiotherapy of Breast Cancer: a Comparison between EBT and EBT3 Radiochromic Films

    PubMed Central

    Bahreyni Toosi, M.T.; Mohamadian, N.; Ghorbani, M.; Khorshidi, F.; Akbari, F.; Knaup, C.

    2016-01-01

    Objective Radiochromic EBT3 film is a later generation of radiochromic films. The aim of this study is to compare EBT and EBT3 radiochromic films in radiotherapy fields of breast cancer. Methods A RANDO phantom was irradiated by a 6 MV Siemens Primus linac with medial and lateral fields of radiotherapy of breast cancer. Dosimetry was performed in various points in the fields using EBT and EBT3 films. Films were scanned by a Microtek color scanner. Dose values from two films in corresponding points were compared. Results In the investigation of calibration, net optical density (NOD) of EBT radiochromic is more than the EBT3 radiochromic film. The highest percentage difference between NODs of two films is related to 0.75 Gy and equals to 14.19%. The lowest value is related to 0.2 Gy dose and is equal to 3.31%. The highest percentage difference between two films on the RANDO phantom in breast cancer fields is 13.51% and the minimum value is equal to 0.33%. Conclusion From the comparison between the two films, most of the points show differences in dose in the measurements in fields of breast cancer radiotherapy. These differences are attributed to the thickness of the active layers, the overall thickness of the films, and the difference in the calibration fitted functions. The advantage of EBT film over EBT3 is a higher sensitivity; on the other hand EBT3 film allows to use its both sides in the scanning process and it is a new version of this film type.

  16. Texture of Al thin films deposited by magnetron sputtering onto epitaxial W(001)

    SciTech Connect

    Madsen, Lynnette D.; Svedberg, Erik B.; Bergstrom, Daniel B.; Petrov, Ivan; Greene, Joseph E.

    2000-01-01

    Highly textured epitaxial metallizations will be required for the next generation of devices with the main driving force being a reduction in electromigration. Herein a model system of 190 nm of Al on a 140 nm layer of W grown on MgO <00l> substrates was studied. The W layer was <00l> oriented and rotated 45 degree sign with respect to the MgO substrate to minimize the misfit; the remaining strain was accommodated by dislocations, evident in transmission electron microscopy images. From high-resolution x-ray diffraction (XRD) measurements, the out-of-plane lattice parameter was determined to be 3.175 Aa, and the in-plane parameter was 3.153 Aa, i.e., the W film sustained a strain resulting in a tetragonal distortion of the lattice. XRD pole figures showed that the Al had four fold symmetry and two dominant orientations, <016> and <3 9 11>, which were twinned with multiple placements on the epitaxial W layer. The driving force for the tilted <001> and <011> orientations of Al on W is due to strain minimization through lattice matching. These results show that <00l> Al deposited at ambient conditions onto W is difficult to achieve and implies that electromigration difficulties are inherent. (c) 2000 American Institute of Physics.

  17. New type of Schottky diode-based Cu-Al-Mn-Cr shape memory material films

    NASA Astrophysics Data System (ADS)

    Aksu Canbay, C.; Dere, A.; Mensah-Darkwa, Kwadwo; Al-Ghamdi, Ahmed; Karagoz Genç, Z.; Gupta, R. K.; Yakuphanoglu, F.

    2016-07-01

    Cr-doped CuAlMn shape memory alloys were produced by arc melting method. The effects of Cr content on microstructure and transformation parameters of were investigated. The alloys were characterized by X-ray analysis, optical microscope observations and differential scanning calorimetry measurements. The grain size of the alloys was decreased by the addition of Cr into CuAlMn alloy system. The martensite transformation temperature was shifted both the lower temperature and higher temperature with the addition of chromium. This change was explained on the basis of the change in the thermodynamics such as enthalpy, entropy and activation energy values. The obtained results indicate that the phase transformation temperatures of the CuAlMn alloy system can be controlled by addition of Cr. We fabricated a Schottky barrier diode and observed that ideality factor and barrier height increase with increasing temperature. The diodes exhibited a thermal sensor behavior. This indicates that Schottky diode-based Cu-Al-Mn-Cr shape memory material films can be used as a sensor in high-temperature measurement applications.

  18. Magnetic and structural properties of Co2FeAl thin films grown on Si substrate

    NASA Astrophysics Data System (ADS)

    Belmeguenai, Mohamed; Tuzcuoglu, Hanife; Gabor, Mihai; Petrisor, Traian; Tiusan, Coriolan; Berling, Dominique; Zighem, Fatih; Mourad Chérif, Salim

    2015-01-01

    The correlation between magnetic and structural properties of Co2FeAl (CFA) thin films of different thicknesses (10 nmfilms. The deduced lattice parameter increases with the film thickness. Moreover, pole figures showed no in-plane preferential growth orientation. The magneto-optical Kerr effect hysteresis loops showed the presence of a weak in-plane uniaxial anisotropy with a random easy axis direction. The coercive field, measured with the applied field along the easy axis direction, and the uniaxial anisotropy field increase linearly with the inverse of the CFA thickness. The microstrip line ferromagnetic resonance measurements for in-plane and perpendicular applied magnetic fields revealed that the effective magnetization and the uniaxial in-plane anisotropy field follow a linear variation versus the inverse CFA thickness. This allows deriving a perpendicular surface anisotropy coefficient of -1.86 erg/cm2.

  19. Effects of AlN buffer layer thickness on the crystallinity and surface morphology of 10-µm-thick a-plane AlN films grown on r-plane sapphire substrates

    NASA Astrophysics Data System (ADS)

    Lin, Chia-Hung; Tamaki, Shinya; Yamashita, Yasuhiro; Miyake, Hideto; Hiramatsu, Kazumasa

    2016-08-01

    10-µm-thick a-plane AlN(11\\bar{2}0) films containing a low-temperature AlN (LT-AlN) buffer layer and a high-temperature AlN (HT-AlN) film were prepared on r-plane sapphire (1\\bar{1}02) substrates. The crystallinity of all the samples with different LT-AlN buffer layer thicknesses was improved after thermal annealing and HT-AlN growth, mainly owing to the elimination of domain boundaries and the concurrent suppression of facet formation. The optimum crystallinity of HT-AlN films was obtained with full widths at half maximum of the X-ray rocking curves of 660 arcsec for AlN(11\\bar{2}0)\\parallel [1\\bar{1}00]AlN and 840 arcsec for (0002) using a 200-nm-thick LT-AlN buffer layer.

  20. Perpendicular magnetic anisotropy and magnetization dynamics in oxidized CoFeAl films.

    PubMed

    Wu, Di; Zhang, Zhe; Li, Le; Zhang, Zongzhi; Zhao, H B; Wang, J; Ma, B; Jin, Q Y

    2015-01-01

    Half-metallic Co-based full-Heusler alloys with perpendicular magnetic anisotropy (PMA), such as Co2FeAl in contact with MgO, are receiving increased attention recently due to its full spin polarization for high density memory applications. However, the PMA induced by MgO interface can only be realized for very thin magnetic layers (usually below 1.3 nm), which would have strong adverse effects on the material properties of spin polarization, Gilbert damping parameter, and magnetic stability. In order to solve this issue, we fabricated oxidized Co50Fe25Al25 (CFAO) films with proper thicknesses without employing the MgO layer. The samples show controllable PMA by tuning the oxygen pressure (PO2) and CFAO thickness (tCFAO), large perpendicular anisotropy field of ~8.0 kOe can be achieved at PO2 = 12% for the sample of tCFAO = 2.1 nm or at PO2 = 7% for tCFAO = 2.8 nm. The loss of PMA at thick tCFAO or high PO2 results mainly from the formation of large amount of CoFe oxides, which are superparamagnetic at room temperature but become hard magnetic at low temperatures. The magnetic CFAO films, with strong PMA in a relatively wide thickness range and small intrinsic damping parameter below 0.028, would find great applications in developing advanced spintronic devices. PMID:26190066

  1. Perpendicular magnetic anisotropy and magnetization dynamics in oxidized CoFeAl films.

    PubMed

    Wu, Di; Zhang, Zhe; Li, Le; Zhang, Zongzhi; Zhao, H B; Wang, J; Ma, B; Jin, Q Y

    2015-01-01

    Half-metallic Co-based full-Heusler alloys with perpendicular magnetic anisotropy (PMA), such as Co2FeAl in contact with MgO, are receiving increased attention recently due to its full spin polarization for high density memory applications. However, the PMA induced by MgO interface can only be realized for very thin magnetic layers (usually below 1.3 nm), which would have strong adverse effects on the material properties of spin polarization, Gilbert damping parameter, and magnetic stability. In order to solve this issue, we fabricated oxidized Co50Fe25Al25 (CFAO) films with proper thicknesses without employing the MgO layer. The samples show controllable PMA by tuning the oxygen pressure (PO2) and CFAO thickness (tCFAO), large perpendicular anisotropy field of ~8.0 kOe can be achieved at PO2 = 12% for the sample of tCFAO = 2.1 nm or at PO2 = 7% for tCFAO = 2.8 nm. The loss of PMA at thick tCFAO or high PO2 results mainly from the formation of large amount of CoFe oxides, which are superparamagnetic at room temperature but become hard magnetic at low temperatures. The magnetic CFAO films, with strong PMA in a relatively wide thickness range and small intrinsic damping parameter below 0.028, would find great applications in developing advanced spintronic devices.

  2. Atomic Layer Deposition Al2O3 Thin Films in Magnetized Radio Frequency Plasma Source

    NASA Astrophysics Data System (ADS)

    Li, Xingcun; Chen, Qiang; Sang, Lijun; Yang, Lizhen; Liu, Zhongwei; Wang, Zhenduo

    Self-limiting deposition of aluminum oxide (Al2O3) thin films were accomplished by the plasma-enhanced chemical vapor deposition using trimethyl aluminum (TMA) and O2 as precursor and oxidant, respectively, where argon was kept flowing in whole deposition process as discharge and purge gas. In here we present a novel plasma source for the atomic layer deposition technology, magnetized radio frequency (RF) plasma. Difference from the commercial RF source, magnetic coils were amounted above the RF electrode, and the influence of the magnetic field strength on the deposition rate and morphology are investigated in detail. It concludes that a more than 3 Å/ purging cycle deposition rate and the good quality of ALD Al2O3 were achieved in this plasma source even without extra heating. The ultra-thin films were characterized by including Fourier transform infrared (FTIR) spectroscopy, X-ray photoelectric spectroscopy (XPS), scanning electron microscopy (SEM), and atomic force microscopy (AFM). The high deposition rates obtained at ambient temperatures were analyzed after in-situ the diagnostic of plasmas by Langmuir probe.

  3. Effect of Hf on structure and age hardening of Ti–Al-N thin films

    PubMed Central

    Rachbauer, R.; Blutmager, A.; Holec, D.; Mayrhofer, P.H.

    2012-01-01

    Protective coatings for high temperature applications, as present e.g. during cutting and milling operations, require excellent mechanical and thermal properties during work load. The Ti1 − xAlxN system is industrially well acknowledged as it covers some of these requirements, and even exhibits increasing hardness with increasing temperature in its cubic modification, known as age hardening. The thermally activated diffusion at high temperatures however enables for the formation of wurtzite AlN, which causes a rapid reduction of mechanical properties in Ti1 − xAlxN coatings. The present work investigates the possibility to increase the formation temperature of w-AlN due to Hf alloying up to 10 at.% at the metal sublattice of Ti1 − xAlxN films. Ab initio predictions on the phase stability and decomposition products of quaternary Ti1 − x − yAlxHfyN alloys, as well as the ternary Ti1 − xAlxN, Hf1 − xAlxN and Ti1 − zHfzN systems, facilitate the interpretation of the experimental findings. Vacuum annealing treatments from 600 to 1100 °C indicate that the isostructural decomposition, which is responsible for age hardening, of the Ti1 − x − yAlxHfyN films starts at lower temperatures than the ternary Ti1 − xAlxN coating. However, the formation of a dual phase structure of c-Ti1 − zHfzN (with z = y/(1 − x)) and w-AlN is shifted to ~ 200 °C higher temperatures, thus retaining a film hardness of ~ 40 GPa up to ~ 1100 °C, while the Hf free films reach the respective hardness maximum of ~ 38 GPa already at ~ 900 °C. Additional annealing experiments at 850 and 950 °C for 20 h indicate a substantial improvement of the oxidation resistance with increasing amount of Hf in Ti1 − x − yAlxHfyN. PMID:22319223

  4. Growth and Characterization of Polyimide-Supported AlN Films for Flexible Surface Acoustic Wave Devices

    NASA Astrophysics Data System (ADS)

    Li, Qi; Liu, Hongyan; Li, Gen; Zeng, Fei; Pan, Feng; Luo, Jingting; Qian, Lirong

    2016-06-01

    Highly c-axis oriented aluminum nitride (AlN) films, which can be used in flexible surface acoustic wave (SAW) devices, were successfully deposited on polyimide (PI) substrates by direct current reactive magnetron sputtering without heating. The sputtering power, film thickness, and deposition pressure were optimized. The characterization studies show that at the optimized conditions, the deposited AlN films are composed of columnar grains, which penetrate through the entire film thickness (~2 μm) and exhibit an excellent (0002) texture with a full width at half maximum value of the rocking curve equal to 2.96°. The film surface is smooth with a root mean square value of roughness of 3.79 nm. SAW prototype devices with a center frequency of about 520 MHz and a phase velocity of Rayleigh wave of about 4160 m/s were successfully fabricated using the AlN/PI composite structure. The obtained results demonstrate that the highly c-axis oriented AlN films with a smooth surface and low stress can be produced on relatively rough, flexible substrates, and this composite structure can be possibly used in flexible SAW devices.

  5. Low substrate temperature deposition of transparent and conducting ZnO:Al thin films by RF magnetron sputtering

    NASA Astrophysics Data System (ADS)

    Waykar, Ravindra; Amit, Pawbake; Kulkarni, Rupali; Jadhavar, Ashok; Funde, Adinath; Waman, Vaishali; Dewan, Rupesh; Pathan, Habib; Jadkar, Sandesh

    2016-04-01

    Transparent and conducting Al-doped ZnO (ZnO:Al) films were prepared on glass substrate using the RF sputtering method at different substrate temperatures from room temperature (RT) to 200 °C. The structural, morphological, electrical and optical properties of these films were investigated using a variety of characterization techniques such as low angle XRD, Raman spectroscopy, X-ray photoelectron spectroscopy (XPS), field-emission scanning electron microscopy (FE-SEM), Hall measurement and UV–visible spectroscopy. The electrical properties showed that films deposited at RT have the lowest resistivity and it increases with an increase in the substrate temperature whereas carrier mobility and concentration decrease with an increase in substrate temperature. Low angle XRD and Raman spectroscopy analysis reavealed that films are highly crystalline with a hexagonal wurtzite structure and a preferred orientation along the c-axis. The FE-SEM analysis showed that the surface morphology of films is strongly dependent on the substrate temperature. The band gap decreases from 3.36 to 3.29 eV as the substrate temperature is increased from RT to 200 °C. The fundamental absorption edge in the UV region shifts towards a longer wavelength with an increase in substrate temperature and be attributed to the Burstein-Moss shift. The synthesized films showed an average transmission (> 85%) in the visible region, which signifies that synthesized ZnO:Al films can be suitable for display devices and solar cells as transparent electrodes.

  6. Twin symmetry texture of energetically condensed niobium thin films on sapphire substrate (a-plane Al2O3)

    NASA Astrophysics Data System (ADS)

    Zhao, X.; Phillips, L.; Reece, C. E.; Seo, Kang; Krishnan, M.; Valderrama, E.

    2011-08-01

    An energetic condensation technique, cathodic arc discharge deposition, is used to grow epitaxial Niobium (Nb) thin films on a-plane sapphire (hexagonal-closed-packed Al2O3) at moderate substrate heating temperature (<400 °C). The epitaxial Nb(110)/Al2O3(1,1,-2,0) thin films reached a maximum residual resistance ratio (RRR) value 214, despite using a reactor-grade Nb cathode source whose RRR was only 30. The measurements suggest that the film's density of impurities and structural defects are lower when compared to Nb films produced by other techniques, such as magnetron sputtering, e-beam evaporation or molecular-beam-epitaxy. At lower substrate temperature, textured polycrystalline Nb thin films were created, and the films might have twin symmetry grains with {110} orientations in-plane. The texture was revealed by x-ray diffraction pole figures. The twin symmetry might be caused by a combination effect of the Nb/Al2O3 three-dimensional epitaxial relationship ("3D-Registry" Claassen's nomenclature) and the "Volmer-Weber" (Island) growth model. However, pole figures obtained by electron backscattering diffraction (EBSD) found no twin symmetry on the thin films' topmost surface (˜50 nm in depth). The EBSD pole figures showed only one Nb{110} crystal plane orientation. A possible mechanism is suggested to explain the differences between the bulk (XRD) and surface (EBSD) pole figures.

  7. Low substrate temperature deposition of transparent and conducting ZnO:Al thin films by RF magnetron sputtering

    NASA Astrophysics Data System (ADS)

    Waykar, Ravindra; Amit, Pawbake; Kulkarni, Rupali; Jadhavar, Ashok; Funde, Adinath; Waman, Vaishali; Dewan, Rupesh; Pathan, Habib; Jadkar, Sandesh

    2016-04-01

    Transparent and conducting Al-doped ZnO (ZnO:Al) films were prepared on glass substrate using the RF sputtering method at different substrate temperatures from room temperature (RT) to 200 °C. The structural, morphological, electrical and optical properties of these films were investigated using a variety of characterization techniques such as low angle XRD, Raman spectroscopy, X-ray photoelectron spectroscopy (XPS), field-emission scanning electron microscopy (FE-SEM), Hall measurement and UV-visible spectroscopy. The electrical properties showed that films deposited at RT have the lowest resistivity and it increases with an increase in the substrate temperature whereas carrier mobility and concentration decrease with an increase in substrate temperature. Low angle XRD and Raman spectroscopy analysis reavealed that films are highly crystalline with a hexagonal wurtzite structure and a preferred orientation along the c-axis. The FE-SEM analysis showed that the surface morphology of films is strongly dependent on the substrate temperature. The band gap decreases from 3.36 to 3.29 eV as the substrate temperature is increased from RT to 200 °C. The fundamental absorption edge in the UV region shifts towards a longer wavelength with an increase in substrate temperature and be attributed to the Burstein-Moss shift. The synthesized films showed an average transmission (> 85%) in the visible region, which signifies that synthesized ZnO:Al films can be suitable for display devices and solar cells as transparent electrodes.

  8. Comparison between nonlinear measurements in patterned and unpatterned thin films

    NASA Astrophysics Data System (ADS)

    Collado, C.; Mateu, J.; O'Callaghan, J. M.

    2004-07-01

    This work compares two alternative methods of characterizing the nonlinearities in a 10 × 10 mm2 superconducting thin film. Both methods are based on measuring the intermodulation distortion in high temperature superconducting (HTS) films. The first method measures the unpatterned film by using a rutile loaded cavity operating at the TE011 mode. The second method is based on intermodulation measurements made in a resonant coplanar line which is patterned on the same film that is used in the rutile cavity. In both experiments we use closed-form expressions and numerical techniques to extract local parameters related to the nonlinearities of the superconductor. The intermodulation data in both type of measurements can be fitted with identical nonlinear parameters of the HTS.

  9. Mid-Infrared Spectroscopy Platform Based on GaAs/AlGaAs Thin-Film Waveguides and Quantum Cascade Lasers.

    PubMed

    Sieger, Markus; Haas, Julian; Jetter, Michael; Michler, Peter; Godejohann, Matthias; Mizaikoff, Boris

    2016-03-01

    The performance and versatility of GaAs/AlGaAs thin-film waveguide technology in combination with quantum cascade lasers for mid-infrared spectroscopy in comparison to conventional FTIR spectroscopy is presented. Infrared radiation is provided by a quantum cascade laser (QCL) spectrometer comprising four tunable QCLs providing a wavelength range of 5-11 μm (1925-885 cm(-1)) within a single collimated beam. Epitaxially grown GaAs slab waveguides serve as optical transducer for tailored evanescent field absorption analysis. A modular waveguide mounting accessory specifically designed for on-chip thin-film GaAs waveguides is presented serving as a flexible analytical platform in lieu of conventional attenuated total reflection (ATR) crystals uniquely facilitating macroscopic handling and alignment of such microscopic waveguide structures in real-world application scenarios.

  10. Comparison of chemically and electrochemically synthesized polyaniline films

    SciTech Connect

    Hatchett, D.W.; Josowicz, M.; Janata, J.

    1999-12-01

    The electrochemical growth of thick ({approximately}2 mm) emeraldine, polyaniline (PANI{sup E}) films from solutions containing 2 M HBF{sub 4} and 0.25 M aniline is demonstrated. Electrochemically and chemically prepared PANI{sup E} films, cast from formic acid solutions, are compared. The combination of electrochemical results with Fourier transform infrared spectroscopic data indicates that pure and homogeneous standard material can be reproducibly prepared electrochemically.

  11. Synthesis of Vertically-Aligned Carbon Nanotubes from Langmuir-Blodgett Films Deposited Fe Nanoparticles on Al2O3/Al/SiO2/Si Substrate.

    PubMed

    Takagiwa, Shota; Kanasugi, Osamu; Nakamura, Kentaro; Kushida, Masahito

    2016-04-01

    In order to apply vertically-aligned carbon nanotubes (VA-CNTs) to a new Pt supporting material of polymer electrolyte fuel cell (PEFC), number density and outer diameter of CNTs must be controlled independently. So, we employed Langmuir-Blodgett (LB) technique for depositing CNT growth catalysts. A Fe nanoparticle (NP) was used as a CNT growth catalyst. In this study, we tried to thicken VA-CNT carpet height and inhibit thermal aggregation of Fe NPs by using Al2O3/Al/SiO2/Si substrate. Fe NP LB films were deposited on three typed of substrates, SiO2/Si, as-deposited Al2O3/Al/SiO2/Si and annealed Al2O3/Al/SiO2/Si at 923 K in Ar atmosphere of 16 Pa. It is known that Al2O3/Al catalyzes hydrocarbon reforming, inhibits thermal aggregation of CNT growth catalysts and reduces CNT growth catalysts. It was found that annealed Al2O3/Al/SiO2/Si exerted three effects more strongly than as-deposited Al2O3/Al/SiO2/Si. VA-CNTs were synthesized from Fe NPs-C16 LB films by thermal chemical vapor deposition (CVD) method. As a result, at the distance between two nearest CNTs 28 nm or less, VA-CNT carpet height on annealed Al2O3/Al/SiO2/Si was about twice and ten times thicker than that on SiO2/Si and that on as-deposited Al2O3/Al/SiO2/Si, respectively. Moreover, distribution of CNT outer diameter on annealed Al2O3/Al/SiO2/Si was inhibited compared to that on SiO2/Si. These results suggest that since thermal aggregation of Fe NPs is inhibited, catalyst activity increases and distribution of Fe NP size is inhibited. PMID:27451619

  12. High-quality eutectic-metal-bonded AlGaAs-GaAs thin films on Si substrates

    NASA Astrophysics Data System (ADS)

    Venkatasubramanian, R.; Timmons, M. L.; Humphreys, T. P.; Keyes, B. M.; Ahrenkiel, R. K.

    1992-02-01

    Device quality GaAs-AlGaAs thin films have been obtained on Si substrates, using a novel approach called eutectic-metal-bonding (EMB). This involves the lattice-matched growth of GaAs-AlGaAs thin films on Ge substrates, followed by bonding onto a Si wafer. The Ge substrates are selectively removed by a CF4/O2 plasma etch, leaving high-quality GaAs-AlGaAs thin films on Si substrates. A minority-carrier lifetime of 103 ns has been obtained in a EMB GaAs-AlGaAs double heterostructure on Si, which is nearly forty times higher than the state-of-the-art lifetime for heteroepitaxial GaAs on Si, and represents the largest reported minority-carrier lifetime for a freestanding GaAs thin film. In addition, a negligible residual elastic strain in the EMB GaAs-AlGaAs films has been determined from Raman spectroscopy measurements.

  13. Electron Cyclotron Resonance Plasma-Assisted Atomic Layer Deposition of Amorphous Al2O3 Thin Films

    NASA Astrophysics Data System (ADS)

    Xiong, Yuqing; Sang, Lijun; Chen, Qiang; Yang, Lizhen; Wang, Zhengduo; Liu, Zhongwei

    2013-01-01

    Without extra heating, Al2O3 thin films were deposited on a hydrogen-terminated Si substrate etched in hydrofluoric acid by using a self-built electron cyclotron resonance (ECR) plasma-assisted atomic layer deposition (ALD) device with Al(CH3)3 (trimethylaluminum; TMA) and O2 used as precursor and oxidant, respectively. During the deposition process, Ar was introduced as a carrier and purging gas. The chemical composition and microstructure of the as-deposited Al2O3 films were characterized by using X-ray diffraction (XRD), an X-ray photoelectric spectroscope (XPS), a scanning electron microscope (SEM), an atomic force microscope (AFM) and a high-resolution transmission electron microscope (HRTEM). It achieved a growth rate of 0.24 nm/cycle, which is much higher than that deposited by thermal ALD. It was found that the smooth surface thin film was amorphous alumina, and an interfacial layer formed with a thickness of ca. 2 nm was observed between the Al2O3 film and substrate Si by HRTEM. We conclude that ECR plasma-assisted ALD can grow Al2O3 films with an excellent quality at a high growth rate at ambient temperature.

  14. Emotion Elicitation: A Comparison of Pictures and Films

    PubMed Central

    Uhrig, Meike K.; Trautmann, Nadine; Baumgärtner, Ulf; Treede, Rolf-Detlef; Henrich, Florian; Hiller, Wolfgang; Marschall, Susanne

    2016-01-01

    Pictures and film clips are widely used and accepted stimuli to elicit emotions. Based on theoretical arguments it is often assumed that the emotional effects of films exceed those of pictures, but to date this assumption has not been investigated directly. The aim of the present study was to compare pictures and films in terms of their capacity to induce emotions verified by means of explicit measures. Stimuli were (a) single pictures presented for 6 s, (b) a set of three consecutive pictures with emotionally congruent contents presented for 2 s each, (c) short film clips with a duration of 6 s. A total of 144 participants rated their emotion and arousal states following stimulus presentation. Repeated-measures ANOVAs revealed that the film clips and 3-picture version were as effective as the classical 1-picture method to elicit positive emotions, however, modulation toward positive valence was little. Modulation toward negative valence was more effective in general. Film clips were less effective than pictorial stimuli in producing the corresponding emotion states (all p < 0.001) and were less arousing (all p ≤ 0.02). Possible reasons for these unexpected results are discussed. PMID:26925007

  15. Structural, optical and electrical properties of Al-N codoped ZnO films by RF-assisted MOCVD method

    NASA Astrophysics Data System (ADS)

    Su, Jianfeng; Zang, Chunhe; Cheng, Chunxiao; Niu, Qiang; Zhang, Yongsheng; Yu, Ke

    2010-10-01

    N-doped ZnO films were produced using N 2 as N source by metal-organic chemical vapor deposition (MOCVD) system which has been improved with radio-frequency (RF)-assisted equipments. The data of secondary ion mass spectroscopy (SIMS) indicate that the concentration of N in N-doped ZnO films is around 5 × 10 20 cm -3, implying that sufficient incorporation of N into ZnO can be obtained by RF-assisted equipment. On this basis, the structural, optical and electrical properties of Al-N codoped ZnO films were studied. Then, the effect of RF power on crystal quality, surface morphologies, optical properties was analyzed using X-ray diffraction, atomic force microscopy and photo-luminescence methods. The results illustrate that the RF plasma is the key factor for the improvement of crystal quality. Then the observation of A 0X recombination associated with N O acceptor in low-temperature PL spectrum proved that some N atoms have occupied the positions of O atoms in ZnO films. Hall measurements shown that p-type ZnO film deposited on quartz glasses was obtained when RF power was 150 W for the Al-N codoped ZnO films, while the resistivity of N-doped ZnO films was rather high. Compared with the Al-doped ZnO film, the obviously increased resistivity of codoped films indicates that the formation of N O acceptors compensate some donors in ZnO films effectively.

  16. Thermal Stability of the Dynamic Magnetic Properties of FeSiAl-Al2O3 and FeSiAl-SiO2 Films Grown by Gradient-Composition Sputtering Technique

    NASA Astrophysics Data System (ADS)

    Zhong, Xiaoxi; Phuoc, Nguyen N.; Soh, Wee Tee; Ong, C. K.; Peng, Long; Li, Lezhong

    2016-08-01

    We carry out a systematic investigation of the dynamic magnetic properties of FeSiAl-Al2O3 and FeSiAl-SiO2 thin films prepared by gradient-composition deposition technique with respect to temperature in the range of 300 K to 420 K. It was found that the magnetic anisotropy field (H K) and ferromagnetic resonance frequency (f FMR) are increased with increasing deposition angle (β) due to the enhancement of stress (σ) when concentrations of Al and O or Si and O are increased. The thermal stability of FeSiAl-Al2O3 films show a very interesting behavior with the magnetic anisotropy increasing with temperature when the deposition angle is increased. In contrast, when the deposition angle is lower, the usual trend of decreasing magnetic anisotropy with increasing temperature is observed. Moreover, the temperature-dependent behaviors of the dynamic permeability and effective Gilbert damping coefficient (α eff) for FeSiAl-Al2O3 and FeSiAl-SiO2 films at different deposition angles are discussed in detail.

  17. Shear mode bulk acoustic wave resonator based on c-axis oriented AlN thin film

    NASA Astrophysics Data System (ADS)

    Milyutin, Evgeny; Gentil, Sandrine; Muralt, Paul

    2008-10-01

    A shear mode resonator based on bulk waves trapped in c-axis oriented AlN thin films was fabricated, simulated, and tested. The active 1.55 μm thick AlN layer was deposited on top of an acoustic Bragg reflector composed of SiO2/AlN λ /4 layer pairs. The resonance was excited by means of interdigitated electrodes consisting of 150 nm thick Al lines. Analytical and simulation calculations show that the in-plane electric field excites bulk acoustic wave shear modes that are trapped in such an AlN film slab. The experimental frequency corresponds well to the theoretical one. The evaluated resonance of the fundamental shear mode at 1.86 GHz revealed a coupling of 0.15% and Q-factor of 870 in air and 260 in silicon oil.

  18. Investigation of the thermal diffusion during the formation of a quasicrystalline phase in thin Al-Pd-Re films

    SciTech Connect

    Seregin, A. Yu. Makhotkin, I. A.; Yakunin, S. N.; Erko, A. I.; Tereshchenko, E. Yu.; Shaitura, D. S.; Chikina, E. A.; Tsetlin, M. B.; Mikheeva, M. N.; Ol'shanskii, E. D.

    2011-05-15

    The layer mixing during the formation of the Al{sub 70}Pd{sub 20}Re{sub 10} icosahedral quasicrystalline phase in thin (55 nm) Al-Pd-Re layered film systems subjected to vacuum annealing has been studied. It is shown that a combined layer of Pd and Al atoms (with the Al{sub 3}Pd{sub 2} phase dominating) is formed in the first stage (at 350 Degree-Sign C), while the rhenium layer remains invariable. In the second annealing stage (at 450 Degree-Sign C), the {beta} Prime -AlPd phase is formed and the Re layer is diffused. In the third stage (700 Degree-Sign C), Pd and Re atoms are uniformly distributed throughout the film with the formation of a quasicrystalline phase.

  19. Clinical comparison of CR and screen film for imaging the critically ill neonate

    NASA Astrophysics Data System (ADS)

    Andriole, Katherine P.; Brasch, Robert C.; Gooding, Charles A.; Gould, Robert G.; Cohen, Pierre A.; Rencken, Ingo R.; Huang, H. K.

    1996-05-01

    A clinical comparison of computed radiography (CR) versus screen-film for imaging the critically-ill neonate is performed, utilizing a modified (hybrid) film cassette containing a CR (standard ST-V) imaging plate, a conventional screen and film, allowing simultaneous acquisition of perfectly matched CR and plain film images. For 100 portable neonatal chest and abdominal projection radiographs, plain film was subjectively compared to CR hardcopy. Three pediatric radiologists graded overall image quality on a scale of one (poor) to five (excellent), as well as visualization of various anatomic structures (i.e., lung parenchyma, pulmonary vasculature, tubes/lines) and pathological findings (i.e., pulmonary interstitial emphysema, pleural effusion, pneumothorax). Results analyzed using a combined kappa statistic of the differences between scores from each matched set, combined over the three readers showed no statistically significant difference in overall image quality between screen- film and CR (p equals 0.19). Similarly, no statistically significant difference was seen between screen-film and CR for anatomic structure visualization and for visualization of pathological findings. These results indicate that the image quality of CR is comparable to plain film, and that CR may be a suitable alternative to screen-film imaging for portable neonatal chest and abdominal examinations.

  20. Space-charge-controlled field emission model of current conduction through Al2O3 films

    NASA Astrophysics Data System (ADS)

    Hiraiwa, Atsushi; Matsumura, Daisuke; Kawarada, Hiroshi

    2016-02-01

    This study proposes a model for current conduction in metal-insulator-semiconductor (MIS) capacitors, assuming the presence of two sheets of charge in the insulator, and derives analytical formulae of field emission (FE) currents under both negative and positive bias. Since it is affected by the space charge in the insulator, this particular FE differs from the conventional FE and is accordingly named the space-charge-controlled (SCC) FE. The gate insulator of this study was a stack of atomic-layer-deposition Al2O3 and underlying chemical SiO2 formed on Si substrates. The current-voltage (I-V) characteristics simulated using the SCC-FE formulae quantitatively reproduced the experimental results obtained by measuring Au- and Al-gated Al2O3/SiO2 MIS capacitors under both biases. The two sheets of charge in the Al2O3 films were estimated to be positive and located at a depth of greater than 4 nm from the Al2O3/SiO2 interface and less than 2 nm from the gate. The density of the former is approximately 1 × 1013 cm-2 in units of electronic charge, regardless of the type of capacitor. The latter forms a sheet of dipoles together with image charges in the gate and hence causes potential jumps of 0.4 V and 1.1 V in the Au- and Al-gated capacitors, respectively. Within a margin of error, this sheet of dipoles is ideally located at the gate/Al2O3 interface and effectively reduces the work function of the gate by the magnitude of the potential jumps mentioned above. These facts indicate that the currents in the Al2O3/SiO2 MIS capacitors are enhanced as compared to those in ideal capacitors and that the currents in the Al-gated capacitors under negative bias (electron emission from the gate) are more markedly enhanced than those in the Au-gated capacitors. The larger number of gate-side dipoles in the Al-gated capacitors is possibly caused by the reaction between the Al and Al2O3, and therefore gate materials that do not react with underlying gate insulators should be chosen

  1. Origin of leakage paths driven by electric fields in Al-doped TiO2 films.

    PubMed

    Park, Gyeong-Su; Park, Seong Yong; Heo, Sung; Kwon, Ohseong; Cho, Kyuho; Han, Kwan-Young; Kang, Sung Jin; Yoon, Aram; Kim, Miyoung

    2014-12-23

    The growth of leakage current paths in Al-doped TiO2 (ATO) films is observed by in situ TEM under negative bias stress. Through systematic HAADF-STEM, STEM-EDS, and STEM-EELS studies, it is confirmed that the electric field-induced growth of the Ru-doped TiO2 phase is the main reason for the ATO film's negative leakage.

  2. A comparison study of textural features between FFDM and film mammogram images

    NASA Astrophysics Data System (ADS)

    Jing, Hao; Yang, Yongyi; Wernick, Miles N.; Yarusso, Laura M.; Nishikawa, Robert M.

    2011-03-01

    In this work, we conducted an imaging study to make a direct, quantitative comparison of image features measured by film and full-field digital mammography (FFDM). We acquired images of cadaver breast specimens containing simulated microcalcifications using both a GE digital mammography system and a screen-film system. To quantify the image features, we calculated and compared a set of 12 texture features derived from spatial gray-level dependence matrices. Our results demonstrate that there is a great degree of agreement between film and FFDM, with the correlation coefficient of the feature vector (formed by the 12 textural features) being 0.9569 between the two; in addition, a paired sign test reveals no significant difference between film and FFDM features. These results indicate that textural features may be interchangeable between film and FFDM for CAD algorithms.

  3. Comparison of non-screen techniques (medical vs. industrial film) for fine-detail skeletal radiography.

    PubMed

    Genant, H K; Doi, K; Mall, J C

    High resolution radiographic techniques for imaging the peripheral skeleton (hand and foot) have gained wide clinical acceptance. The two procedures receiving widest attention are non-screen techniques: one uses medical film (Kodak RP); and the other uses industrial film (Kodak Type M) combined with optical magnification. The imaging properties and clinical applications of these two techniques were examined. The modulation transfer functions (MTF's) of the recording systems, Wiener spectrum analyses of noise, and film sensitometry were obtained. Clinical comparisons were made from 200 consecutive patients radiographed with both techniques and the relative merits in metabolic, arthritic and traumatic afflictions were assessed. The results demonstrate the superiority of the industrial film compared to medical film technique in all parameters of image quality. However, the inconveniences of special processing and viewing necessitated by this technique, as well as the increased radiation exposure, limit its clinical application to small, selection groups of patients as determined from the clinical comparative study. PMID:977266

  4. Quality Imaging - Comparison of CR Mammography with Screen-Film Mammography

    SciTech Connect

    Gaona, E.; Azorin Nieto, J.; Iran Diaz Gongora, J. A.; Arreola, M.; Casian Castellanos, G.; Perdigon Castaneda, G. M.; Franco Enriquez, J. G.

    2006-09-08

    The aim of this work is a quality imaging comparison of CR mammography images printed to film by a laser printer with screen-film mammography. A Giotto and Elscintec dedicated mammography units with fully automatic exposure and a nominal large focal spot size of 0.3 mm were used for the image acquisition of phantoms in screen-film mammography. Four CR mammography units from two different manufacturers and three dedicated x-ray mammography units with fully automatic exposure and a nominal large focal spot size of 0.3 mm were used for the image acquisition of phantoms in CR mammography. The tests quality image included an assessment of system resolution, scoring phantom images, Artifacts, mean optical density and density difference (contrast). In this study, screen-film mammography with a quality control program offers a significantly greater level of quality image relative to CR mammography images printed on film.

  5. Perpendicular Magnetic Anisotropy of Full-Heusler Films in Pt/Co2FeAl/MgO Trilayers

    NASA Astrophysics Data System (ADS)

    Li, Xiaoqi; Yin, Shaoqian; Liu, Yupeng; Zhang, Delin; Xu, Xiaoguang; Miao, Jun; Jiang, Yong

    2011-04-01

    We report on perpendicular magnetic anisotropy (PMA) in a Pt/Co2FeAl/MgO sandwiched structure with a thick Co2FeAl layer of 2-2.5 nm. The PMA is thermally stable and the anisotropy energy density Ku is 1.3×106 erg/cm3 for the structure with 2 nm Co2FeAl after annealing at 350 °C. The annealing temperature and Co2FeAl thickness greatly affect the PMA. Our results provide an effective way to realize relatively thick perpendicularly magnetized Heusler alloy films.

  6. Structure of Fe3Si/Al/Fe3Si thin film stacks on GaAs(001)

    NASA Astrophysics Data System (ADS)

    Jenichen, B.; Jahn, U.; Nikulin, A.; Herfort, J.; Kirmse, H.

    2015-11-01

    Fe3Si/Al/Fe3Si/GaAs(001) structures were deposited by molecular-beam epitaxy and characterized by transmission and scanning electron microscopy, and x-ray diffraction. The first Fe3Si film on GaAs(001) grew epitaxially as a (001) oriented single crystal. The subsequent Al film grew almost {111} oriented in a fibrous texture although the underlying Fe3Si is exactly (001) oriented. The growth in this orientation is triggered by a thin transition region which is formed at the Fe3Si/Al interface. In the end, after the growth of the second Fe3Si layer on top of the Al, the final properties of the whole stack depended on the substrate temperature T s during deposition of the last film. The upper Fe3Si films are mainly {110} oriented although they are poly-crystalline. At lower T s, around room temperature, all the films retain their original structural properties.

  7. Characterization and friction behavior of LST/PEO duplex-treated Ti6Al4V alloy with burnished MoS2 film

    NASA Astrophysics Data System (ADS)

    Qin, Yongkun; Xiong, Dangsheng; Li, Jianliang

    2015-08-01

    Laser surface-textured Ti6Al4V substrate was treated by plasma electrolytic oxidation process to prepare an oxide ceramic coating and then burnished with a thin MoS2 film. The area densities of textured dimples and the surface roughness of oxide ceramic underlay which affected the longevity of MoS2 films were thoroughly investigated. The results showed that a mixed surface pattern combining large textured dimples (diameter 150 μm) with small discharged dimples (diameter 5-17 μm) was fabricated by the LST/PEO duplex treatment and it contributed to prolonging the lubricating life of MoS2 film in comparison to the LST or PEO treatment. Wherein, the mixed dimples acted as lubricant reservoirs and the hard oxide coatings provided high load supports for the lubricating films. A much longer life of low friction was provided by the LST/PEO/MoS2 coatings with higher density of textured dimples (S = 55%) and lower roughness of LST/PEO surface (Ra = 1.0 μm).

  8. In-situ TEM crystallization of anorthite-glass films on {alpha}-Al{sub 2}O{sub 3}

    SciTech Connect

    Mallamaci, M.P.; Carter, C.B.; Bentley, J.

    1993-12-31

    Anorthite-glass films have been grown by pulsed-laser deposition on single-crystal {alpha}-Al{sub 2}O{sub 3} substrates which were pre-thinned to electron transparency. The glass films were crystallized in the transmission electron microscope (TEM), which allowed direct observation and video-recording of the crystallization process. Crystallization of these films in the TEM resulted in the formation of hexagonal and orthorhombic anorthite. The orthorhombic phase was the predominant product of glass films grown at elevated substrate temperatures and displayed strong epitaxy with the underlying substrate. In contrast, the hexagonal phase was the major constituent of films grown at ambient substrate temperature and displayed no clear epitaxy with the substrate. The difference in degree of epitaxy and phase structure may be evidence of ordering at the original glass/oxide interface.

  9. Measurement of the electron-phonon coupling factor dependence on film thickness and grain size in Au, Cr, and Al.

    PubMed

    Hostetler, J L; Smith, A N; Czajkowsky, D M; Norris, P M

    1999-06-01

    Femtosecond thermoreflectance data for thin films and bulk quantities of Au, Cr, and Al are compared with the parabolic two-step thermal diffusion model for the purpose of determining the electron-phonon coupling factor. The thin films were evaporated and sputtered onto different substrates to produce films that vary structurally. The measurement of the electron-phonon coupling factor is shown to be sensitive to grain size and film thickness. The thin-film thermoreflectance data are compared with that of the corresponding bulk material and to a theoretical model relating the coupling rate to the grain-boundary scattering and size effects on the mean free path of the relevant energy carrier.

  10. Oxidation precursor dependence of atomic layer deposited Al2O3 films in a-Si:H(i)/Al2O3 surface passivation stacks.

    PubMed

    Xiang, Yuren; Zhou, Chunlan; Jia, Endong; Wang, Wenjing

    2015-01-01

    In order to obtain a good passivation of a silicon surface, more and more stack passivation schemes have been used in high-efficiency silicon solar cell fabrication. In this work, we prepared a-Si:H(i)/Al2O3 stacks on KOH solution-polished n-type solar grade mono-silicon(100) wafers. For the Al2O3 film deposition, both thermal atomic layer deposition (T-ALD) and plasma enhanced atomic layer deposition (PE-ALD) were used. Interface trap density spectra were obtained for Si passivation with a-Si films and a-Si:H(i)/Al2O3 stacks by a non-contact corona C-V technique. After the fabrication of a-Si:H(i)/Al2O3 stacks, the minimum interface trap density was reduced from original 3 × 10(12) to 1 × 10(12) cm(-2) eV(-1), the surface total charge density increased by nearly one order of magnitude for PE-ALD samples and about 0.4 × 10(12) cm(-2) for a T-ALD sample, and the carrier lifetimes increased by a factor of three (from about 10 μs to about 30 μs). Combining these results with an X-ray photoelectron spectroscopy analysis, we discussed the influence of an oxidation precursor for ALD Al2O3 deposition on Al2O3 single layers and a-Si:H(i)/Al2O3 stack surface passivation from field-effect passivation and chemical passivation perspectives. In addition, the influence of the stack fabrication process on the a-Si film structure was also discussed in this study.

  11. Transparent Conductive Al-Doped ZnO/Cu Bilayer Films Grown on Polymer Substrates at Room Temperature

    NASA Astrophysics Data System (ADS)

    Huang, Ji-Jie; Wang, Yu-Ping; Lu, Jian-Guo; Gong, Li; Ye, Zhi-Zhen

    2011-12-01

    Al-doped ZnO (AZO)/Cu bi-layer films are deposited by dc magnetron sputtering on polycarbonate substrates at room temperature. The structural, electrical and optical properties of the films are investigated at various sputtering powers of the Cu layer. The AZO/Cu bi-layer film deposited at a moderate sputtering power of 180 W for the Cu layer displayed the highest figure of merit of 3.47 × 10-3Ω-1, with a low sheet resistance of 12.38 Ω/sq, an acceptable visible transmittance of 73%, and a high near-infrared reflectance of about 50%.

  12. Growth temperature dependent structural and magnetic properties of epitaxial Co2FeAl Heusler alloy films

    NASA Astrophysics Data System (ADS)

    Qiao, Shuang; Nie, Shuaihua; Zhao, Jianhua; Zhang, Xinhui

    2013-06-01

    The structural and magnetic properties of a series of Co2FeAl Heusler alloy films grown on GaAs(001) substrate by molecular beam epitaxy have been studied. The epitaxial Co2FeAl films with an ordered L21 structure have been successfully obtained at growth temperature of 433 K, with an in-plane cubic magnetic anisotropy superimposed with an unusual uniaxial magnetic anisotropy. With increasing growth temperature, the ordered L21 structure degrades. Meanwhile, the uniaxial anisotropy decreases and eventually disappears above 673 K. The interfacial bonding between As and Co or Fe atom is suggested to be responsible for the additional uniaxial anisotropy.

  13. Ellipsometry and XPS comparative studies of thermal and plasma enhanced atomic layer deposited Al2O3-films

    PubMed Central

    Haeberle, Jörg; Gargouri, Hassan; Naumann, Franziska; Gruska, Bernd; Arens, Michael; Tallarida, Massimo; Schmeißer, Dieter

    2013-01-01

    Summary We report on results on the preparation of thin (<100 nm) aluminum oxide (Al2O3) films on silicon substrates using thermal atomic layer deposition (T-ALD) and plasma enhanced atomic layer deposition (PE-ALD) in the SENTECH SI ALD LL system. The T-ALD Al2O3 layers were deposited at 200 °C, for the PE-ALD films we varied the substrate temperature range between room temperature (rt) and 200 °C. We show data from spectroscopic ellipsometry (thickness, refractive index, growth rate) over 4” wafers and correlate them to X-ray photoelectron spectroscopy (XPS) results. The 200 °C T-ALD and PE-ALD processes yield films with similar refractive indices and with oxygen to aluminum elemental ratios very close to the stoichiometric value of 1.5. However, in both also fragments of the precursor are integrated into the film. The PE-ALD films show an increased growth rate and lower carbon contaminations. Reducing the deposition temperature down to rt leads to a higher content of carbon and CH-species. We also find a decrease of the refractive index and of the oxygen to aluminum elemental ratio as well as an increase of the growth rate whereas the homogeneity of the film growth is not influenced significantly. Initial state energy shifts in all PE-ALD samples are observed which we attribute to a net negative charge within the films. PMID:24367741

  14. Fabrication and Characteristics of High Capacitance Al Thin Films Capacitor Using a Polymer Inhibitor Bath in Electroless Plating Process.

    PubMed

    Cho, Young-Lae; Lee, Jung-Woo; Lee, Chang-Hyoung; Choi, Hyung-Seon; Kim, Sung-Su; Song, Young Il; Park, Chan; Suh, Su-Jeong

    2015-10-01

    An aluminum (Al) thin film capacitor was fabricated for a high capacitance capacitor using electrochemical etching, barrier-type anodizing, and electroless Ni-P plating. In this study, we focused on the bottom-up filling of Ni-P electrodes on Al2O3/Al with etched tunnels. The Al tunnel pits were irregularly distributed on the Al foil, diameters were in the range of about 0.5~1 μm, the depth of the tunnel pits was approximately 35~40 μm, and the complex structure was made full filled hard metal. To control the plating rate, the experiment was performed by adding polyethyleneimine (PEI, C2H5N), a high molecular substance. PEI forms a cross-link at the etching tunnel inlet, playing the role of delaying the inlet plating. When the PEI solution bath was used after activation, the Ni-P layer was deposited selectively on the bottoms of the tunnels. The characteristics were analyzed by adding the PEI addition quantity rate of 100~600 mg/L into the DI water. The capacitance of the Ni-P/Al2O3 (650~700 nm)/Al film was measured at 1 kHz using an impedance/gain phase analyzer. For the plane film without etch tunnels the capacitance was 12.5 nF/cm2 and for the etch film with Ni-P bottom-up filling the capacitance was 92 nF/cm2. These results illustrate a remarkable maximization of capacitance for thin film metal capacitors. PMID:26726471

  15. Fabrication and Characteristics of High Capacitance Al Thin Films Capacitor Using a Polymer Inhibitor Bath in Electroless Plating Process.

    PubMed

    Cho, Young-Lae; Lee, Jung-Woo; Lee, Chang-Hyoung; Choi, Hyung-Seon; Kim, Sung-Su; Song, Young Il; Park, Chan; Suh, Su-Jeong

    2015-10-01

    An aluminum (Al) thin film capacitor was fabricated for a high capacitance capacitor using electrochemical etching, barrier-type anodizing, and electroless Ni-P plating. In this study, we focused on the bottom-up filling of Ni-P electrodes on Al2O3/Al with etched tunnels. The Al tunnel pits were irregularly distributed on the Al foil, diameters were in the range of about 0.5~1 μm, the depth of the tunnel pits was approximately 35~40 μm, and the complex structure was made full filled hard metal. To control the plating rate, the experiment was performed by adding polyethyleneimine (PEI, C2H5N), a high molecular substance. PEI forms a cross-link at the etching tunnel inlet, playing the role of delaying the inlet plating. When the PEI solution bath was used after activation, the Ni-P layer was deposited selectively on the bottoms of the tunnels. The characteristics were analyzed by adding the PEI addition quantity rate of 100~600 mg/L into the DI water. The capacitance of the Ni-P/Al2O3 (650~700 nm)/Al film was measured at 1 kHz using an impedance/gain phase analyzer. For the plane film without etch tunnels the capacitance was 12.5 nF/cm2 and for the etch film with Ni-P bottom-up filling the capacitance was 92 nF/cm2. These results illustrate a remarkable maximization of capacitance for thin film metal capacitors.

  16. Characterization and film properties of electrophoretically deposited nanosheets of anionic titanate and cationic MgAl-layered double hydroxide.

    PubMed

    Matsuda, Atsunori; Sakamoto, Hisatoshi; Mohd Nor, Mohd Arif Bin; Kawamura, Go; Muto, Hiroyuki

    2013-02-14

    Anionic hydrated titanate (H(n)TiO(m): HTO) nanosheets and cationic magnesium-aluminum layered double hydroxide (Mg-Al LDH) nanosheets were electrophoretically deposited on positively and negatively charged indium tin oxide (ITO)-coated glass substrates, respectively. The HTO nanosheets and Mg-Al LDH nanosheets obtained were identified in neutral water as H(2)Ti(4)O(9)·nH(2)O with a ζ-potential of -23 mV and Mg(6)Al(2)(OH)(18)·4.5H(2)O with a ζ-potential of +41 mV, respectively. Dense and smooth HTO and Mg-Al LDH films with layered structures with thicknesses of about 10-15 μm were prepared in 300 s at 7.5 V by electrophoretic deposition (EPD) from the nanosheet suspensions. Both EPD HTO and LDH films showed elasticity because of their layered laminate structures. The HTO thick films demonstrated large adsorption properties and high photocatalytic activity, while the Mg-Al LDH thick films showed relatively high ionic conductivity of 10(-5) S cm(-1) at 80 °C and 80% relative humidity.

  17. Electric field tunability of microwave soft magnetic properties of Co2FeAl Heusler alloy film

    NASA Astrophysics Data System (ADS)

    Li, Shandong; Xu, Jie; Xue, Qian; Du, Honglei; Li, Qiang; Chen, Caiyun; Yang, Ru; Xie, Shiming; Liu, Ming; Nan, Tianxiang; Sun, Nian X.; Shao, Weiquan

    2015-05-01

    Co2FeAl Heusler alloy film with 100 nm in thickness was sputtered on (011)-cut lead zinc niobate-lead titanate (PZN-PT) single crystal slabs. It was revealed that this multiferroic laminate shows very large electric field (E-field) tunability of microwave soft magnetic properties. With the increase of electric field from 0 to 8 kV/cm on PZN-PT, the anisotropy field, HK, of the Co2FeAl film along [100] direction of PZN-PT is dramatically enhanced from 65 to 570 Oe due to the strong magnetoelectric (ME) coupling between ferromagnetic Co2FeAl film and ferroelectric substrate. At the same time, the damping constant α of Co2FeAl film dramatically decreases from 0.20 to 0.029. As a result, a significantly shift of self-biased ferromagnetic resonance frequency, fFMR, from 1.86 to 6.68 GHz with increment of 3.6 times was obtained. These features demonstrate that Co2FeAl/PZN-PT multiferroic laminate is promising in fabrication of E-field tunable microwave components.

  18. Magnetic and structural anisotropies of Co2FeAl Heusler alloy epitaxial thin films

    NASA Astrophysics Data System (ADS)

    Gabor, M. S.; Petrisor, T., Jr.; Tiusan, C.; Hehn, M.; Petrisor, T.

    2011-10-01

    This paper shows the correlation between chemical order, lattice strains, and magnetic properties of Heusler Co2FeAl films epitaxially grown on MgO(001). A detailed magnetic characterization is performed using vector-field magnetometery combined with a numerical Stoner-Wohlfarth analysis. We demonstrate the presence of three types of in-plane anisotropies: one biaxial, as expected for the cubic symmetry, and two uniaxial. The three anisotropies show different behavior with the annealing temperature. The biaxial anisotropy shows a monotonic increase. The uniaxial anisotropy that is parallel to the hard biaxial axes (related to chemical homogeneity) decreases, while the anisotropy that is supposed to have a magnetostatic origin remains constant.

  19. Growth and characterisation of NiAl and N-doped NiAl films deposited by closed field unbalanced magnetron sputtering ion plating using elemental ni and Al targets.

    PubMed

    Said, R; Ahmed, W; Abuain, T; Abuazza, A; Gracio, J

    2010-04-01

    Closed Field Unbalanced Magnetron Sputtering Ion Plating (CFUBMSIP) has been used to deposit undoped and nitrogen doped NiAI thin films onto glass and stainless steel 316 substrates. These films have potential applications in tribological, electronic media and thermal barrier coatings. The surface characteristics, composition, mechanical and structural properties have been investigated using stylus profilometry, X-ray diffraction (XRD), Energy dispersive spectroscopy (EDAX), Atomic force microscopy (AFM) and nanoindentation. The average thickness of the films was approximately 1 microm. The X-ray diffraction spectra revealed the presence of the beta NiAl phase. The EDAX results revealed that all of the undoped and nitrogen doped NiAl thin films exhibited the near equiatomic NiAl composition with the best results being achieved using 300 Watts DC power for Ni and 400 Watts DC power for Al targets respectively. AFM results of both types of films deposited on glass samples exhibited a surface roughness of less than 100 nm. The nanoindenter results for coatings on glass substrates displayed hardness and elastic modulus of 7.7 GPa and 100 GPa respectively. The hardest coatings obtained were obtained at 10% of nitrogen.

  20. Deep-UV sensors based on SAW oscillators using low-temperature-grown AlN films on sapphires.

    PubMed

    Laksana, Chipta; Chen, Meei-Ru; Liang, Yen; Tzou, An-Jyeg; Kao, Hui-Ling; Jeng, Erik; Chen, Jyh; Chen, Hou-Guang; Jian, Sheng-Rui

    2011-08-01

    High-quality epitaxial AlN films were deposited on sapphire substrates at low growth temperature using a helicon sputtering system. SAW filters fabricated on the AlN films exhibited excellent characteristics, with center frequency of 354.2 MHz, which corresponds to a phase velocity of 5667 m/s. An oscillator fabricated using AlN-based SAW devices is presented and applied to deep-UV light detection. A frequency downshift of about 43 KHz was observed when the surface of SAW device was illuminated by a UV source with dominant wavelength of around 200 nm. The results indicate the feasibility of developing remote sensors for deep-UV measurement using AlN-based SAW oscillators. PMID:21859589

  1. Deep-UV sensors based on SAW oscillators using low-temperature-grown AlN films on sapphires.

    PubMed

    Laksana, Chipta; Chen, Meei-Ru; Liang, Yen; Tzou, An-Jyeg; Kao, Hui-Ling; Jeng, Erik; Chen, Jyh; Chen, Hou-Guang; Jian, Sheng-Rui

    2011-08-01

    High-quality epitaxial AlN films were deposited on sapphire substrates at low growth temperature using a helicon sputtering system. SAW filters fabricated on the AlN films exhibited excellent characteristics, with center frequency of 354.2 MHz, which corresponds to a phase velocity of 5667 m/s. An oscillator fabricated using AlN-based SAW devices is presented and applied to deep-UV light detection. A frequency downshift of about 43 KHz was observed when the surface of SAW device was illuminated by a UV source with dominant wavelength of around 200 nm. The results indicate the feasibility of developing remote sensors for deep-UV measurement using AlN-based SAW oscillators.

  2. Tuning the formation of p-type defects by peroxidation of CuAlO2 films

    NASA Astrophysics Data System (ADS)

    Luo, Jie; Lin, Yow-Jon; Hung, Hao-Che; Liu, Chia-Jyi; Yang, Yao-Wei

    2013-07-01

    p-type conduction of CuAlO2 thin films was realized by the rf sputtering method. Combining with Hall, X-ray photoelectron spectroscopy, energy dispersive spectrometer, and X-ray diffraction results, a direct link between the hole concentration, Cu vacancy (VCu), and interstitial oxygen (Oi) was established. It is shown that peroxidation of CuAlO2 films may lead to the increased formation probability of acceptors (VCu and Oi), thus, increasing the hole concentration. The dependence of the VCu density on growth conditions was identified for providing a guide to tune the formation of p-type defects in CuAlO2. Understanding the defect-related p-type conductivity of CuAlO2 is essential for designing optoelectronic devices and improving their performance.

  3. Tuning the formation of p-type defects by peroxidation of CuAlO{sub 2} films

    SciTech Connect

    Luo, Jie; Lin, Yow-Jon; Yang, Yao-Wei; Hung, Hao-Che; Liu, Chia-Jyi

    2013-07-21

    p-type conduction of CuAlO{sub 2} thin films was realized by the rf sputtering method. Combining with Hall, X-ray photoelectron spectroscopy, energy dispersive spectrometer, and X-ray diffraction results, a direct link between the hole concentration, Cu vacancy (V{sub Cu}), and interstitial oxygen (O{sub i}) was established. It is shown that peroxidation of CuAlO{sub 2} films may lead to the increased formation probability of acceptors (V{sub Cu} and O{sub i}), thus, increasing the hole concentration. The dependence of the V{sub Cu} density on growth conditions was identified for providing a guide to tune the formation of p-type defects in CuAlO{sub 2}. Understanding the defect-related p-type conductivity of CuAlO{sub 2} is essential for designing optoelectronic devices and improving their performance.

  4. Perpendicular magnetic anisotropy and magnetization dynamics in oxidized CoFeAl films

    NASA Astrophysics Data System (ADS)

    Wu, Di; Zhang, Zhe; Li, Le; Zhang, Zongzhi; Zhao, H. B.; Wang, J.; Ma, B.; Jin, Q. Y.

    2015-07-01

    Half-metallic Co-based full-Heusler alloys with perpendicular magnetic anisotropy (PMA), such as Co2FeAl in contact with MgO, are receiving increased attention recently due to its full spin polarization for high density memory applications. However, the PMA induced by MgO interface can only be realized for very thin magnetic layers (usually below 1.3 nm), which would have strong adverse effects on the material properties of spin polarization, Gilbert damping parameter, and magnetic stability. In order to solve this issue, we fabricated oxidized Co50Fe25Al25 (CFAO) films with proper thicknesses without employing the MgO layer. The samples show controllable PMA by tuning the oxygen pressure (PO2) and CFAO thickness (tCFAO), large perpendicular anisotropy field of ~8.0 kOe can be achieved at PO2 = 12% for the sample of tCFAO = 2.1 nm or at PO2 = 7% for tCFAO = 2.8 nm. The loss of PMA at thick tCFAO or high PO2 results mainly from the formation of large amount of CoFe oxides, which are superparamagnetic at room temperature but become hard magnetic at low temperatures. The magnetic CFAO films, with strong PMA in a relatively wide thickness range and small intrinsic damping parameter below 0.028, would find great applications in developing advanced spintronic devices.

  5. Perpendicular magnetic anisotropy and magnetization dynamics in oxidized CoFeAl films

    PubMed Central

    Wu, Di; Zhang, Zhe; Li, Le; Zhang, Zongzhi; Zhao, H. B.; Wang, J.; Ma, B.; Jin, Q. Y.

    2015-01-01

    Half-metallic Co-based full-Heusler alloys with perpendicular magnetic anisotropy (PMA), such as Co2FeAl in contact with MgO, are receiving increased attention recently due to its full spin polarization for high density memory applications. However, the PMA induced by MgO interface can only be realized for very thin magnetic layers (usually below 1.3 nm), which would have strong adverse effects on the material properties of spin polarization, Gilbert damping parameter, and magnetic stability. In order to solve this issue, we fabricated oxidized Co50Fe25Al25 (CFAO) films with proper thicknesses without employing the MgO layer. The samples show controllable PMA by tuning the oxygen pressure (PO2) and CFAO thickness (tCFAO), large perpendicular anisotropy field of ~8.0 kOe can be achieved at PO2 = 12% for the sample of tCFAO = 2.1 nm or at PO2 = 7% for tCFAO = 2.8 nm. The loss of PMA at thick tCFAO or high PO2 results mainly from the formation of large amount of CoFe oxides, which are superparamagnetic at room temperature but become hard magnetic at low temperatures. The magnetic CFAO films, with strong PMA in a relatively wide thickness range and small intrinsic damping parameter below 0.028, would find great applications in developing advanced spintronic devices. PMID:26190066

  6. Evaluating sol-gel ceramic thin films for metal implant applications: III. In vitro aging of sol-gel-derived zirconia films on Ti-6Al-4V.

    PubMed

    Kirk, P B; Filiaggi, M J; Sodhi, R N; Pilliar, R M

    1999-01-01

    Sol-gel-derived zirconia films were deposited onto polished Ti-6Al-4V substrates by dip-coating from an alkoxide precursor solution. No change in morphology of the zirconia film was observed after aging at 37 degrees C for 4-12 weeks in pH 4.0 buffer solution or Hanks' balanced salt solution (HBSS), although a precipitate predominantly composed of calcium phosphate was formed on those films aged in HBSS. X-ray diffraction identified the phase of the zirconia film as either cubic or tetragonal, and revealed no degradation to the monoclinic phase after aging. By a substrate straining test, the fracture strain of the coating was revealed to be 1.5%, above the yield strain of the titanium alloy substrate. At this strain level, through-thickness cracks formed in the coating where slip bands emerged from the substrate. Qualitatively, the adhesion of the film was sufficient to prevent gross delamination of the film at high strain levels, although small regions of delamination were caused by compressive buckling of the film. This behavior indicates generally good adhesion. No change in this behavior was observed after aging.

  7. Enhanced spin Hall ratios by Al and Hf impurities in Pt thin films

    NASA Astrophysics Data System (ADS)

    Nguyen, Minh-Hai; Zhao, Mengnan; Ralph, Daniel C.; Buhrman, Robert A.

    The spin Hall effect (SHE) in Pt has been reported to be strong and hence promising for spintronic applications. In the intrinsic SHE mechanism, which has been shown to be dominant in Pt, the spin Hall conductivity σSH is constant, dependent only on the band structure of the spin Hall material. The spin Hall ratio θSH =σSH . ρ , on the other hand, should be proportional to the electrical resistivity ρ of the spin Hall layer. This suggests the possibility of enhancing the spin Hall ratio by introducing additional diffusive scattering to increase the electrical resistivity of the spin Hall layer. Our previous work has shown that this could be done by increasing the surface scattering by growing thinner Pt films in contact with higher resistivity materials such as Ta. In this talk, we discuss another approach: to introduce impurities of metals with negligible spin orbit torque into the Pt film. Our PtAl and PtHf alloy samples exhibit strong enhancement of the spin Hall torque efficiency with impurity concentration due to increased electrical resistivity. Supported in part by Samsung Electronics.

  8. SEMICONDUCTOR DEVICES Thin film AlGaInP light emitting diodes with different reflectors

    NASA Astrophysics Data System (ADS)

    Wei, Gao; Weiling, Guo; Deshu, Zou; Yuan, Qin; Wenjing, Jiang; Guangdi, Shen

    2010-12-01

    The reflectivity versus incident angle of a GaP/Au reflector, a GaP/SiO2/Au triple ODR (omni-directional reflector) and a GaP/ITO/Au triple ODR was calculated. Compared to AlGaInP LEDs with a GaAs absorbing substrate, thin film LEDs with a Au reflector, a SiO2 ODR and an ITO ODR were fabricated. At a current of 20 mA, the optical output power of four samples was respectively 1.04, 1.14, 2.53 and 2.15 mW. The Au diffusion in the annealing process reduces the reflectivity of the Au/GaP reflector to 9%. The different transmittance of quarter-wave thickness ITO and SiO2 induces different optical output power between the SiO2 and ITO thin film LEDs. The insertion of Zn in the ITO ODR LED does not affect the light output but evidently reduces the voltage.

  9. Characterization of AlN:Mn thin film phosphors prepared by metalorganic chemical vapor deposition

    NASA Astrophysics Data System (ADS)

    Sato, Ayumu; Azumada, Kyoko; Atsumori, Toshiyuki; Hara, Kazuhiko

    2007-01-01

    The structural and luminescent properties of AlN:Mn films, which showed red-orange luminescence originated from the transition of 3d-electrons in a Mn ion, were investigated. The samples were grown on sapphire (0 0 0 1) wafers by an atmospheric-pressure metalorganic chemical vapor deposition at 1050 °C. The grown films were polycrystal oriented preferentially towards the <0 0 0 1> direction of wurtzite structure. It is suggested from the dependence of Mn concentration (CMn) on the lattice constant and the low-temperature photoluminescence spectrum that most of the Mn atoms occupy the lattice sites for CMn up to about 1×1020 cm-3. The samples exhibited bright cathodoluminescence reflecting the improved crystalline quality compared to that of the low-temperature-grown samples. The highest luminance, 245 cd/m 2, has been obtained from the layer with CMn of 3×1019 cm-3 under the excitation conditions of 5 kV and 0.1 mA/cm 2 as an accelerating voltage and a current density, respectively.

  10. Texture and microstructure in co-sputtered Mg-M-O (M = Mg, Al, Cr, Ti, Zr, and Y) films

    NASA Astrophysics Data System (ADS)

    Saraiva, M.; Depla, D.

    2012-05-01

    Mg-M-O solid solution films (M = Mg, Al, Cr, Ti, Zr, and Y) with various M contents are grown employing reactive co-sputtering by varying the target-to-substrate distance. It is shown that all films are biaxially aligned. When the two cathodes are equipped with the same target material (Mg), the in-plane alignment is determined by the cathode closest to the substrate, i.e., by the largest material flux. In the case of nearly equal material fluxes from the two cathodes, double in-plane orientation is observed. This is also the case for the Mg-Al-O and Mg-Cr-O films, while the Mg-Ti-O, Mg-Zr-O and Mg-Y-O films exhibit single in-plane orientation. Pole figures indicate that the grains in Mg-M-O (M different than Mg) are titled; in the Mg-Al-O, Mg-Cr-O, and Mg-Ti-O films, the grains tilt towards the Al, Cr, and Ti metal flux, respectively, while the grain tilt of the Mg-Zr-O and Mg-Y-O films is found to be towards the Mg metal flux. Furthermore, SEM cross-sectional images of the Mg-M-O films reveal columnar microstructure with columns tilted to the same direction as the grains. A mechanism which is based on the cation radius change upon the incorporation of an M atom in the MgO lattice is proposed to explain the tilting.

  11. Microstructure and property of diamond-like carbon films with Al and Cr co-doping deposited using a hybrid beams system

    NASA Astrophysics Data System (ADS)

    Dai, Wei; Liu, Jingmao; Geng, Dongsen; Guo, Peng; Zheng, Jun; Wang, Qimin

    2016-12-01

    DLC films with weak carbide former Al and carbide former Cr co-doping (Al:Cr-DLC) were deposited by a hybrid beams system comprising an anode-layer linear ion beam source (LIS) and high power impulse magnetron sputtering using a gas mixture of C2H2 and Ar as the precursor. The doped Al and Cr contents were controlled via adjusting the C2H2 fraction in the gas mixture. The composition, microstructure, compressive stress, mechanical properties and tribological behaviors of the Al:Cr-DLC films were researched carefully using X-ray photoelectron spectroscopy, transmission electron microscopy, Raman spectroscopy, stress-tester, nanoindentation and ball-on-plate tribometer as function of the C2H2 fraction. The results show that the Al and Cr contents in the films increased continuously as the C2H2 fraction decreased. The doped Cr atoms preferred to bond with the carbon while the Al atoms mainly existed in metallic state. Structure modulation with alternate multilayer consisted of Al-poor DLC layer and Al-rich DLC layer was found in the films. Those periodic Al-rich DLC layers can effectively release the residual stress of the films. On the other hand, the formation of the carbide component due to Cr incorporation can help to increase the film hardness. Accordingly, the residual stress of the DLC films can be reduced without sacrificing the film hardness though co-doping Al and Cr atoms. Furthermore, it was found that the periodic Al-rich layer can greatly improve the elastic resilience of the DLC films and thus decreases the film friction coefficient and wear rate significantly. However, the existence of the carbide component would cause abrasive wear and thus deteriorate the wear performance of the films.

  12. Dosimetry comparison and characterisation of an Al K ultrasoft x-ray beam from an MRC cold-cathode source.

    PubMed

    Hoshi, M; Goodhead, D T; Brenner, D J; Bance, D A; Chmielewski, J J; Paciotti, M A; Bradbury, J N

    1985-10-01

    Ultrasoft x-rays of 0.3-5 keV have provided a unique tool for the investigation of intracellular mechanisms of radiation action in biological organisms, including mammalian cells. However, their use presents unique practical problems in dosimetry and experimental design. Detailed interpretation of the biological results requires reliable dosimetry and well characterised monoenergetic beams. This paper presents a comparison between two fundamentally different dosimetric techniques, namely the ionisation current in an extrapolation chamber and photon counts in a proportional counter. Agreement within 7% was obtained when these two methods were applied to an Al K x-ray beam (1.5 keV) from an MRC cold-cathode transmission target discharge tube as previously used in many biological experiments. Photographic film was calibrated as a relative dosimetric technique and used for investigation of the intensity uniformity of the radiation field. These techniques provide a comprehensive characterisation of the beam in the position of the biological cells, including photon flux (or absorbed dose rate), spectral purity (showing much less than 1% bremsstrahlung relative to characteristic Al x-rays) and uniformity over the irradiation area (within about 5% for mammalian cell irradiations).

  13. Effects of RF inductively coupled plasma ion source on the microstructure and mechanical properties of Ti-Al-N nanocrystalline films

    NASA Astrophysics Data System (ADS)

    Li, Dongke; Xie, Wei; Zou, Changwei

    2016-04-01

    The effects of radio frequency inductively coupled plasma ion source (RF-ICPIS) powers on the properties of Ti-Al-N nanocrystalline films were explored. The results indicated the powers of ion source had great influences on elements contents of Ti1- x Al x N nanocrystalline films. However, for Ti-Al-N films deposited at 60 W with highest Al content, h-AlN phase appeared. With the increasing of RF-ICPIS powers, Al contents in the Ti1- x Al x N increased gradually which led to the decreased grain size and denser nanostructure. The TEM images indicated that all the Ti-Al-N films were nanocrystalline TiN embedded into an amorphous matrix. The hardness of films increased, while the friction coefficient decreased with the variation of RF-ICPIS powers. Maximum hardness of 34.7 GPa and minimum friction coefficient of 0.13 were obtained for Ti-Al-N films deposited at RF-ICPIS powers of 50 W. The introduction of RF-ICPIS significantly improved and enhanced the mechanical properties of Ti-Al-N films.

  14. Growth mechanisms of GaSb heteroepitaxial films on Si with an AlSb buffer layer

    SciTech Connect

    Vajargah, S. Hosseini; Botton, G. A.; Ghanad-Tavakoli, S.; Preston, J. S.; Kleiman, R. N.

    2013-09-21

    The initial growth stages of GaSb epilayers on Si substrates and the role of the AlSb buffer layer were studied by high-angle annular dark-field scanning transmission electron microscopy (HAADF-STEM). Heteroepitaxy of GaSb and AlSb on Si both occur by Volmer-Weber (i.e., island mode) growth. However, the AlSb and GaSb islands have distinctly different characteristics as revealed through an atomic-resolution structural study using Z-contrast of HAADF-STEM imaging. While GaSb islands are sparse and three dimensional, AlSb islands are numerous and flattened. The introduction of 3D island-forming AlSb buffer layer facilitates the nucleation of GaSb islands. The AlSb islands-assisted nucleation of GaSb islands results in the formation of drastically higher quality planar film at a significantly smaller thickness of films. The interface of the AlSb and GaSb epilayers with the Si substrate was further investigated with energy dispersive X-ray spectrometry to elucidate the key role of the AlSb buffer layer in the growth of GaSb epilayers on Si substrates.

  15. Growth and characterization of Al2O3 films on fluorine functionalized epitaxial graphene

    NASA Astrophysics Data System (ADS)

    Robinson, Zachary R.; Jernigan, Glenn G.; Wheeler, Virginia D.; Hernández, Sandra C.; Eddy, Charles R.; Mowll, Tyler R.; Ong, Eng Wen; Ventrice, Carl A.; Geisler, Heike; Pletikosic, Ivo; Yang, Hongbo; Valla, Tonica

    2016-08-01

    Intelligent engineering of graphene-based electronic devices on SiC(0001) requires a better understanding of processes used to deposit gate-dielectric materials on graphene. Recently, Al2O3 dielectrics have been shown to form conformal, pinhole-free thin films by functionalizing the top surface of the graphene with fluorine prior to atomic layer deposition (ALD) of the Al2O3 using a trimethylaluminum (TMA) precursor. In this work, the functionalization and ALD-precursor adsorption processes have been studied with angle-resolved photoelectron spectroscopy, low energy electron diffraction, and X-ray photoelectron spectroscopy. It has been found that the functionalization process has a negligible effect on the electronic structure of the graphene, and that it results in a twofold increase in the adsorption of the ALD-precursor. In situ TMA-dosing and XPS studies were also performed on three different Si(100) substrates that were terminated with H, OH, or dangling Si-bonds. This dosing experiment revealed that OH is required for TMA adsorption. Based on those data along with supportive in situ measurements that showed F-functionalization increases the amount of oxygen (in the form of adsorbed H2O) on the surface of the graphene, a model for TMA-adsorption on graphene is proposed that is based on a reaction of a TMA molecule with OH.

  16. Initial growth, refractive index, and crystallinity of thermal and plasma-enhanced atomic layer deposition AlN films

    SciTech Connect

    Van Bui, Hao Wiggers, Frank B.; Gupta, Anubha; Nguyen, Minh D.; Aarnink, Antonius A. I.; Jong, Michel P. de; Kovalgin, Alexey Y.

    2015-01-01

    The authors have studied and compared the initial growth and properties of AlN films deposited on Si(111) by thermal and plasma-enhanced atomic layer deposition (ALD) using trimethylaluminum and either ammonia or a N{sub 2}-H{sub 2} mixture as precursors. In-situ spectroscopic ellipsometry was employed to monitor the growth and measure the refractive index of the films during the deposition. The authors found that an incubation stage only occurred for thermal ALD. The linear growth for plasma-enhanced ALD (PEALD) started instantly from the beginning due to the higher nuclei density provided by the presence of plasma. The authors observed the evolution of the refractive index of AlN during the growth, which showed a rapid increase up to a thickness of about 30 nm followed by a saturation. Below this thickness, higher refractive index values were obtained for AlN films grown by PEALD, whereas above that the refractive index was slightly higher for thermal ALD films. X-ray diffraction characterization showed a wurtzite crystalline structure with a (101{sup ¯}0) preferential orientation obtained for all the layers with a slightly better crystallinity for films grown by PEALD.

  17. Image reconstruction algorithm for optically stimulated luminescence 2D dosimetry using laser-scanned Al2O3:C and Al2O3:C,Mg films

    NASA Astrophysics Data System (ADS)

    Ahmed, M. F.; Schnell, E.; Ahmad, S.; Yukihara, E. G.

    2016-10-01

    The objective of this work was to develop an image reconstruction algorithm for 2D dosimetry using Al2O3:C and Al2O3:C,Mg optically stimulated luminescence (OSL) films imaged using a laser scanning system. The algorithm takes into account parameters associated with detector properties and the readout system. Pieces of Al2O3:C films (~8 mm  ×  8 mm  ×  125 µm) were irradiated and used to simulate dose distributions with extreme dose gradients (zero and non-zero dose regions). The OSLD film pieces were scanned using a custom-built laser-scanning OSL reader and the data obtained were used to develop and demonstrate a dose reconstruction algorithm. The algorithm includes corrections for: (a) galvo hysteresis, (b) photomultiplier tube (PMT) linearity, (c) phosphorescence, (d) ‘pixel bleeding’ caused by the 35 ms luminescence lifetime of F-centers in Al2O3, (e) geometrical distortion inherent to Galvo scanning system, and (f) position dependence of the light collection efficiency. The algorithm was also applied to 6.0 cm  ×  6.0 cm  ×  125 μm or 10.0 cm  ×  10.0 cm  ×  125 µm Al2O3:C and Al2O3:C,Mg films exposed to megavoltage x-rays (6 MV) and 12C beams (430 MeV u‑1). The results obtained using pieces of irradiated films show the ability of the image reconstruction algorithm to correct for pixel bleeding even in the presence of extremely sharp dose gradients. Corrections for geometric distortion and position dependence of light collection efficiency were shown to minimize characteristic limitations of this system design. We also exemplify the application of the algorithm to more clinically relevant 6 MV x-ray beam and a 12C pencil beam, demonstrating the potential for small field dosimetry. The image reconstruction algorithm described here provides the foundation for laser-scanned OSL applied to 2D dosimetry.

  18. Electrical properties of fluorinated amorphous carbon (a-C:F(x)) and aluminum nitride (AlN) films

    NASA Astrophysics Data System (ADS)

    Biswas, Nivedita

    Electrical properties of Fluorinated Amorphous Carbon (a-C:Fx) and Aluminum Nitride (AlN) films were studied using capacitance-voltage (C-V), conductance-voltage (G-V) and current-voltage (I-V) measurements. The films were deposited using Plasma Enhanced Chemical Vapor Deposition (PECVD) technique under different conditions. The C-V characteristics of the a-C:Fx, films was stretched about the voltage axis, exhibited hysteresis effects and was characterized with a frequency dependent flatband voltage. The equivalent parallel conductance data showed a good fit to theory only if continuum of states is assumed. I-V characteristics exhibited low current in the forward and reverse biasing conditions. Annealing the sample in hydrogen introduced charge leakage in the film and was characterized with a damaged interface. The C-V characteristics of the AlN films were marked with frequency dependent flatband voltage and exhibited minimal hysteresis. Depending on processing conditions, equivalent parallel conductance data showed a good fit to theory either for single time constant or continuum of states model. I-V characteristics indicated that the current conduction in these films is a bulk limited process. Dielectric constant, as calculated using C-V curves and using I-V curves, showed good agreement. Annealing the samples in hydrogen resulted in charge polarization and reversal of hysteresis cycle but the interfacial characteristics showed marked improvement.

  19. Quantifying protein adsorption on combinatorially sputtered Al-, Nb-, Ta- and Ti-containing films with electron microprobe and spectroscopic ellipsometry

    NASA Astrophysics Data System (ADS)

    Byrne, T. M.; Lohstreter, L.; Filiaggi, M. J.; Bai, Zhijun; Dahn, J. R.

    2009-04-01

    Although metallic biomaterials are widely used, systematic studies of protein adsorption onto such materials are generally lacking. Combinatorial binary libraries of Al 1-xNb x, Al 1-xTa x, Al 1-xTi x, Nb 1-xTa x, Nb 1-xTi x, and Ta 1-xTi x (0 ⩽ x ⩽ 1) and a ternary library of Al 1-xTi xTa y (0 ⩽ x ⩽ 1 and 0 ⩽ y ⩽ 0.7), along with their corresponding pure element films were sputtered onto glass substrates using a unique magnetron sputtering technique. Films were characterized with wavelength-dispersive spectroscopy (WDS), X-ray diffraction (XRD) and X-ray photoelectron spectroscopy (XPS). Fibrinogen and albumin adsorption amounts were measured by wavelength-dispersive spectroscopy (WDS) and spectroscopic ellipsometry (SE) equipment, both high throughput techniques with automated motion stage capabilities. Protein adsorption onto these films was found to be closely correlated to the alumina surface fraction, with high alumina content at the surface leading to low amounts of adsorbed fibrinogen and albumin. Protein adsorption amounts obtained with WDS and SE were in good agreement for all films.

  20. High TIMT insulator-to-metal transition of the VO2 films on AlN/Si substrate

    NASA Astrophysics Data System (ADS)

    Slusar, Tetiana; Cho, Jin-Cheol; Kim, Bong-Jun; Kim, Hyun-Tak

    Electronical and structural properties of the VO2 thin films are strongly affected by growth conditions and underlying substrate providing a flexibility of their functional parameters. We present a new VO2/AlN/Si heterostructure, where VO2 is characterized by an excellent insulator-to-metal transition (IMT) occurred at a higher temperature TIMT than that typical for single crystals. Mentioned characteristics are associated with growth mechanism of the film and its epitaxial alignment with respect to the substrate. In particular, the TIMT upshift in VO2/AlN/Si is explained by a stable crystallographic configuration in the plane of the VO2 film as well as a tensile deformation of a monoclinic a-axis formed by tilted and dimerized V4+-V4+, responsible for strong electron correlations. Moreover, proposed synergy of VO2 and Si is able to make new results for advanced materials fabrication and development of switching devices of new generation.

  1. Structural and magnetic properties of ion beam sputtered Co2FeAl full Heusler alloy thin films

    NASA Astrophysics Data System (ADS)

    Husain, Sajid; Kumar, Ankit; Chaudhary, Sujeet; Svedlindh, Peter

    2016-05-01

    Co2FeAl full Heusler alloy thin films grown at different temperatures on Si(100) substrates using ion beam sputtering system have been investigated. X-ray diffraction (XRD) patterns revealed the A2 disordered phase in these films. The deduced lattice parameter slightly increases with increase in the growth temperature. The saturation magnetization it is found to increase with increase in growth temperature. The magnetic anisotropy has been studied using angle dependent magneto-optical Kerr effect. In the room temperature deposited film, the combination of cubic and uniaxial anisotropy have been observed with weak in-plane uniaxial anisotropy which increases with growth temperature. The uniaxial anisotropy is attributed to the anisotropic interfacial bonding in these Co2FeAl /Si(100) heterostructures.

  2. Property transformation of graphene with Al{sub 2}O{sub 3} films deposited directly by atomic layer deposition

    SciTech Connect

    Zheng, Li; Cao, Duo; Wang, Zhongjian; Xia, Chao; Cheng, Xinhong Yu, Yuehui; Shen, Dashen

    2014-01-13

    Al{sub 2}O{sub 3} films are deposited directly onto graphene by H{sub 2}O-based atomic layer deposition (ALD), and the films are pinhole-free and continuously cover the graphene surface. The growth process of Al{sub 2}O{sub 3} films does not introduce any detective defects in graphene, suppresses the hysteresis effect and tunes the graphene doping to n-type. The self-cleaning of ALD growth process, together with the physically absorbed H{sub 2}O and oxygen-deficient ALD environment consumes OH{sup −} bonds, suppresses the p-doping of graphene, shifts Dirac point to negative gate bias and enhances the electron mobility.

  3. Impact of the surface-near silicon substrate properties on the microstructure of sputter-deposited AlN thin films

    SciTech Connect

    Schneider, M.; Bittner, A.; Patocka, F.; Schmid, U.; Stoeger-Pollach, M.

    2012-11-26

    In micro-/nanomachined devices and systems, aluminum nitride (AlN) thin films are widely used due to their piezoelectric properties. This work evaluates the potential of modifying the interface between the AlN thin film and the silicon (Si) wafer serving as bottom electrode for optimized crystallographic orientation and, hence, improved electrical and piezoelectric properties. The films were analyzed using temperature-dependant leakage current measurements, transmission electron microscopy, and x-ray diffraction. By preconditioning of the Si substrate surface applying sputter etching prior to film deposition, leakage current levels are substantially decreased and an increased (002) orientation of the AlN grains is observed.

  4. Enhanced water vapor barrier properties for biopolymer films by polyelectrolyte multilayer and atomic layer deposited Al 2 O 3 double-coating

    NASA Astrophysics Data System (ADS)

    Hirvikorpi, Terhi; Vähä-Nissi, Mika; Harlin, Ali; Salomäki, Mikko; Areva, Sami; Korhonen, Juuso T.; Karppinen, Maarit

    2011-09-01

    Commercial polylactide (PLA) films are coated with a thin (20 nm) non-toxic polyelectrolyte multilayer (PEM) film made from sodium alginate and chitosan and additionally with a 25-nm thick atomic layer deposited (ALD) Al 2O 3 layer. The double-coating of PEM + Al 2O 3 is found to significantly enhance the water vapor barrier properties of the PLA film. The improvement is essentially larger compared with the case the PLA film being just coated with an ALD-grown Al 2O 3 layer. The enhanced water vapor barrier characteristics of the PEM + Al 2O 3 double-coated PLA films are attributed to the increased hydrophobicity of the surface of these films.

  5. Influences of defects evolvement on the properties of sputtering deposited ZnO:Al films upon hydrogen annealing

    NASA Astrophysics Data System (ADS)

    Yin, Shiliu; Shirolkar, Mandar M.; Li, Jieni; Li, Ming; Song, Xiao; Dong, Xiaolei; Wang, Haiqian

    2016-06-01

    Understanding how the defects interact with each other and affect the properties of ZnO:Al films is very important for improving their performance as a transparent conductive oxide (TCO). In the present work, we studied the effects of hydrogen annealing on the structural, optical and electrical properties of ZnO:Al films prepared by magnetron sputtering. High resolution transmission electron microscopy observations reveal that annealing at ˜300 oC induces the formation of partial dislocations (PD) and stacking faults (SF), which disrupt the lattice periodicity leading to decreased grain size. Annealing at temperatures above ˜500 oC can remove the PD and SF, but large number of zinc vacancies will be generated. Our results show that when films are annealed at ˜500 oC, the oxygen-related defects (interstitials Oi, etc.) in the as-grown films can be remarkably removed or converted, which lead to increments in the carrier concentration, mobility, and the transmittance in the visible range. At annealing temperatures above 550 oC, the hydrogen etching effect becomes predominant, and Al donors are deactivated by zinc vacancies. We also find an abnormal endothermic process by thermal analysis and an abnormal increase in the resistivity during heating the sample under hydrogen atmosphere, based on which the interaction of Oi with the defects (mainly Al donors and PD) is discussed. It is also demonstrated that by annealing the as-grown AZO films at ˜500 oC under hydrogen atmosphere, high performance TCO films with a low resistivity of 4.48 × 10-4 Ωcm and high transmittance of above 90% in the visible light are obtained.

  6. Effects of Al, Ga-DOPING on Transparent Conducting Properties of Amorphous ZnO-SnO2 Films

    NASA Astrophysics Data System (ADS)

    Moriga, Toshihiro; Nishimura, Yusuke; Suketa, Hiroshi; Murai, Kei-Ichiro; Nogami, Kazuhiro; Tominaga, Kikuo; Nakabayashi, Ichiro

    ZnOSnO2 thin films were deposited on glass substrates (Corning#1737) by DC magnetron sputtering. In this works, we examined a doping effect on a ZnO target on transparent conducting properties. ZnO:Al(4wt%), and ZnO:Ga(6wt%) targets were used for a dopant-free ZnO target. Substrate temperature was held at 250°C. The current ratio δ was defined as IZn/IZ+ISn (ZnO target current divided by the sum of ZnO and SnO2 target currents). Compositions of as-deposited films were changed with the current ratio δ. In the ZnO-SnO2 system, amorphous transparent films appeared over the range of 0.33≤δ≤0.73. On the other hand, in the ZnO:Al(4wt%)-SnO2 and ZnO:Ga(6wt%)-SnO2 systems, they appeared over the range of 0.20≤δ≤0.80 and 0.33≤δ≤0.80, ≤δ≤ respectively. The minimum resistivity of amorphous films was about 3.0×10-2 Ωcm for all the systems. Al, Ga doping effect on film resistivity was not clear very much. But optical transparencies were 80-90% in visible region, 10% higher than those of ZnO-SnO2 system at average. Optical band gap for the films with the same current ratio δ also was enhanced by the Al, Ga doping.

  7. High quality ZnO:Al transparent conducting oxide films synthesized by pulsed filtered cathodic arc deposition

    SciTech Connect

    Anders, Andre; Lim, Sunnie H.N.; Yu, Kin Man; Andersson, Joakim; Rosen, Johanna; McFarland, Mike; Brown, Jeff

    2009-04-24

    Aluminum-doped zinc oxide, ZnO:Al or AZO, is a well-known n-type transparent conducting oxide with great potential in a number of applications currently dominated by indium tin oxide (ITO). In this study, the optical and electrical properties of AZO thin films deposited on glass and silicon by pulsed filtered cathodic arc deposition are systematically studied. In contrast to magnetron sputtering, this technique does not produce energetic negative ions, and therefore ion damage can be minimized. The quality of the AZO films strongly depends on the growth temperature while only marginal improvements are obtained with post-deposition annealing. The best films, grown at a temperature of about 200?C, have resistivities in the low to mid 10-4 Omega cm range with a transmittance better than 85percent in the visible part of the spectrum. It is remarkable that relatively good films of small thickness (60 nm) can be fabricated using this method.

  8. Surface potential distribution of a LaAlO3 film on mixed termination SrTiO3

    NASA Astrophysics Data System (ADS)

    Jang, Yun Hyeong; Cho, Jin Hyung

    2016-09-01

    Scanning probe microscope (SPM) is used to investigate the morphology and the electric properties of the surface, as well as the interface, of LaAlO3/SrTiO3 (LAO/STO) films. To establish the physical properties of the heteroepitaxial oxide interface, we characterized single- and mixed-termination of the STO substrates by using nanoscopic measurements of the electric and the structural properties, as well as the LAO film grown on the mixed-terminated STO substrates. In the case of the LAO film grown on the low-miscut STO substrate, the surface potential only showed a difference at the step edge while the LAO film on the high-miscut STO substrate showed a considerable change in the surface potential distribution at the region in which step bunching has occurred. In the poling experiment, a significant rise in the surface potential difference is observed after writing of the DC bias.

  9. Roughness reduction of large-area high-quality thick Al films for echelle gratings by multi-step deposition method.

    PubMed

    Li, Zizheng; Gao, Jinsong; Yang, Haigui; Wang, Tongtong; Wang, Xiaoyi

    2015-09-01

    Generally, echelle grating ruling is performed on a thick Al film. Consequently, high-quality large-area thick Al films preparation becomes one of the most important factors to realize a high-performance large-size echelle grating. In this paper, we propose a novel multi-step deposition process to improve thick Al films quality. Compared with the traditional single-step deposition process, it is found that the multi-step deposition process can effectively suppress large-size grains growth resulting in a low surface roughness and high internal compactness of thick Al films. The differences between single- and multi-step deposition processes are discussed in detail. By using multi-step deposition process, we prepared high-quality large-area Al films with a thickness more than 10 μm on a 520 mm × 420 mm neoceramic glass substrate.

  10. Energy band engineering and controlled p-type conductivity of CuAlO2 thin films by nonisovalent Cu-O alloying

    NASA Astrophysics Data System (ADS)

    Yao, Z. Q.; He, B.; Zhang, L.; Zhuang, C. Q.; Ng, T. W.; Liu, S. L.; Vogel, M.; Kumar, A.; Zhang, W. J.; Lee, C. S.; Lee, S. T.; Jiang, X.

    2012-02-01

    The electronic band structure and p-type conductivity of CuAlO2 films were modified via synergistic effects of energy band offset and partial substitution of less-dispersive Cu+ 3d10 with Cu2+ 3d9 orbitals in the valence band maximum by alloying nonisovalent Cu-O with CuAlO2 host. The Cu-O/CuAlO2 alloying films show excellent electronic properties with tunable wide direct bandgaps (˜3.46-3.87 eV); Hall measurements verify the highest hole mobilities (˜11.3-39.5 cm2/Vs) achieved thus far for CuAlO2 thin films and crystals. Top-gate thin film transistors constructed on p-CuAlO2 films were presented, and the devices showed pronounced performance with Ion/Ioff of ˜8.0 × 102 and field effect mobility of 0.97 cm2/Vs.

  11. Substrate Heating Effect on c-Axis Texture and Piezoelectric Properties of AlN Thin Films Deposited by Unbalanced Magnetron Sputtering

    NASA Astrophysics Data System (ADS)

    Hasheminiasari, Masood; Lin, Jianliang

    2016-06-01

    Aluminum nitride (AlN) thin films with highly preferred (002) orientations have been reactively deposited by a pulsed-closed field unbalanced magnetron sputtering system using TiN/Ti as the seed/adhesion layer with various substrate temperatures. The texture, orientation and piezoelectric properties of AlN films were characterized by means of x-ray diffraction, rocking curves and laser interferometry. A Michelson laser interferometer was designed and built to obtain the converse piezoelectric response of the deposited AlN thin films. It was found that a slight substrate temperature increase would significantly affect the (002) orientation and the piezoelectric coefficient of AlN thin films compared to the coating obtained with no intentional substrate heating, while higher temperature applications on substrate deteriorated the c-axis texture of the coatings without significant improvement in the piezoelectric response of AlN films.

  12. Comparison of the Sputter Rates of Oxide Films Relative to the Sputter Rate of SiO2

    SciTech Connect

    Baer, Donald R.; Engelhard, Mark H.; Lea, Alan S.; Nachimuthu, Ponnusamy; Droubay, Timothy C.; Kim, J.; Lee, B.; Mathews, C.; Opila, R. L.; Saraf, Laxmikant V.; Stickle, William F.; Wallace, Robert; Wright, B. S.

    2010-09-02

    Because of the increasing technological importance of oxide films for a variety of applications, there is a growing interest in knowing the sputter rates for a wide variety of oxides. To support needs of users of the Environmental Molecular Sciences Laboratory (EMSL) User facility as well as our research programs, we have made a series of measurements of the sputter rates for oxide films that have been grown by oxygen plasma assisted molecular beam epitaxy (OPA-MBE), pulsed laser deposition (PLD), Atomic Layer Deposition (ALD), electrochemical oxidation, or sputter deposition. The sputter rates for these oxide films were determined in comparison to the sputter rates for thermally grown SiO2, a common sputter rate reference material. The film thicknesses and densities of these films were usually measured using x-ray reflectivity (XRR). These samples were mounted in an x-ray photoelectron spectroscopy (XPS) system or an Auger electron spectrometer for sputtering measurements using argon ion sputtering. Although the primary objective was to determine relative sputter rates at a fixed angle, the measurements were also used to determine: i) the angle dependence of the relative sputter rates; ii) the energy dependence of the relative sputter rates; and iii) the extent of ion beam reduction for the various oxides. Materials examined include: SiO2 (reference films), Al2O3, CeO2, Cr2O3, Fe2O3, HfO2, ITO (In-Sn-oxide) Ta2O5, TiO2 (anatase and rutile) and ZnO. We find that the sputter rates for the oxides can vary up to a factor of two (usually slower) from that observed for SiO2. The ratios of sputter rates to SiO2 appear to be relatively independent of ion beam energy for the range of 1kV to 4 kV and for incident angles of less than 50º. As expected, the ion beam reduction of the oxides varies with the sputter angle. These studies demonstrate that we can usually obtain sputter rate reproducibility better than 5% for similar oxide films.

  13. Characterization and mechanical properties investigation of TiN-Ag films onto Ti-6Al-4V

    NASA Astrophysics Data System (ADS)

    Du, Dongxing; Liu, Daoxin; Zhang, Xiaohua; Tang, Jingang; Xiang, Dinggen

    2016-03-01

    To investigate their effect on fretting fatigue (FF) resistance of a Ti-6Al-4V alloy, hard solid lubricating composite films of TiN with varying silver contents (TiN-Ag) were deposited on a Ti-6Al-4V alloy using ion-assisted magnetron sputtering. The surface morphology and structure were analyzed by atomic force microscopy, X-ray diffractometry, X-ray photoelectron spectroscopy, and transmission electron microscopy. The hardness, bonding strength, and toughness of films were tested using a micro-hardness tester, scratch tester, and a repeated press-press test system that was manufactured in-house, respectively. The FF resistance of TiN-Ag composite films was studied using self-developed devices. The results show that the FF resistance of a titanium alloy can be improved by TiN-Ag composite films, which were fabricated using hard TiN coating doped with soft Ag. The FF life of Ag0.5, Ag2, Ag5, Ag10 and Ag20 composite films is 2.41, 3.18, 3.20, 2.94 and 2.87 times as great as that of the titanium alloy, respectively. This is because the composite films have the better toughness, friction lubrication, and high bonding strength. When the atomic fraction of Ag changes from 2% to 5%, the FF resistance of the composite films shows the best performance. This is attributed to the surface integrity of the composite film is sufficiently fine to prevent the initiation and early propagation of FF cracks.

  14. Laser irradiation of ZnO:Al/Ag/ZnO:Al multilayers for electrical isolation in thin film photovoltaics

    NASA Astrophysics Data System (ADS)

    Crupi, Isodiana; Boscarino, Stefano; Torrisi, Giacomo; Scapellato, Giorgia; Mirabella, Salvatore; Piccitto, Giovanni; Simone, Francesca; Terrasi, Antonio

    2013-09-01

    Laser irradiation of ZnO:Al/Ag/ZnO:Al transparent contacts is investigated for segmentation purposes. The quality of the irradiated areas has been experimentally evaluated by separation resistance measurements, and the results are complemented with a thermal model used for numerical simulations of the laser process. The presence of the Ag interlayer plays two key effects on the laser scribing process by increasing the maximum temperature reached in the structure and accelerating the cool down process. These evidences can promote the use of ultra-thin ZnO:Al/Ag/ZnO:Al electrode in large-area products, such as for solar modules.

  15. Laser irradiation of ZnO:Al/Ag/ZnO:Al multilayers for electrical isolation in thin film photovoltaics

    PubMed Central

    2013-01-01

    Laser irradiation of ZnO:Al/Ag/ZnO:Al transparent contacts is investigated for segmentation purposes. The quality of the irradiated areas has been experimentally evaluated by separation resistance measurements, and the results are complemented with a thermal model used for numerical simulations of the laser process. The presence of the Ag interlayer plays two key effects on the laser scribing process by increasing the maximum temperature reached in the structure and accelerating the cool down process. These evidences can promote the use of ultra-thin ZnO:Al/Ag/ZnO:Al electrode in large-area products, such as for solar modules. PMID:24053228

  16. Comparison between HTS nonlinearities in patterned and unpatterned thin films

    NASA Astrophysics Data System (ADS)

    Mateu, Jordi; Collado, Carlos; O'Callaghan, Juan M.; Universitat Politecnica de Catalunya Team

    2004-03-01

    High Temperature Superconductor (HTS) materials exhibit a surface impedance dependence on the applied field. This behavior still remains not yet fully understood. To overcome this, many experiments have been carried out through the last decade. In general, the experimental work has been done measuring intermodulation products in patterned devices since most of practical devices are based on patterned structures. In this case the nonlinearities might come from many causes -- HTS properties, possible damage due to patterning, shape of resonator, etc.--, which need to be characterized. This raises the question of how representative of HTS properties are the experiments performed on patterned samples. To address this, we propose such a procedure, which is based on obtaining parameters describing the HTS nonlinearities from intermodulation measurements made on unpatterned and patterned thin films. As example, we have characterized the nonlinearities in a one side 10x10 mm^2 YBCO on MgO thin film by measuring the intermodulation products with a rutile-loaded cavity operating at TE_011 mode and a coplanar half-wave resonator. The intermodulation data in both type of measurements can be fitted using closed-form expressions and numerical techniques with identical nonlinear parameters of the HTS.

  17. Atomic layer deposition of Al-incorporated Zn(O,S) thin films with tunable electrical properties

    SciTech Connect

    Park, Helen Hejin; Jayaraman, Ashwin; Heasley, Rachel; Yang, Chuanxi; Hartle, Lauren; Gordon, Roy G.; Mankad, Ravin; Haight, Richard; Gunawan, Oki; Mitzi, David B.

    2014-11-17

    Zinc oxysulfide, Zn(O,S), films grown by atomic layer deposition were incorporated with aluminum to adjust the carrier concentration. The electron carrier concentration increased up to one order of magnitude from 10{sup 19} to 10{sup 20} cm{sup −3} with aluminum incorporation and sulfur content in the range of 0 ≤ S/(Zn+Al) ≤ 0.16. However, the carrier concentration decreased by five orders of magnitude from 10{sup 19} to 10{sup 14} cm{sup −3} for S/(Zn+Al) = 0.34 and decreased even further when S/(Zn+Al) > 0.34. Such tunable electrical properties are potentially useful for graded buffer layers in thin-film photovoltaic applications.

  18. Highly transparent and conductive Al-doped ZnO nanoparticulate thin films using direct write processing.

    PubMed

    Vunnam, S; Ankireddy, K; Kellar, J; Cross, W

    2014-05-16

    Solution processable Al-doped ZnO (AZO) thin films are attractive candidates for low cost transparent electrodes. We demonstrate here an optimized nanoparticulate ink for the fabrication of AZO thin films using scalable, low-cost direct write processing (ultrasonic spray deposition) in air at atmospheric pressure. The thin films were made via thermal processing of as-deposited films. AZO films deposited using the proposed nanoparticulate ink with further reducing in vacuum and rf plasma of forming gas exhibited optical transparency greater than 95% across the visible spectrum, and electrical resistivity of 0.5 Ω cm and it drops down to 7.0 × 10(-2) Ω cm after illuminating with UV light, which is comparable to commercially available tin doped indium oxide colloidal coatings. Various structural analyses were performed to investigate the influence of ink chemistry, deposition parameters, and annealing temperatures on the structural, optical, and electrical characteristics of the spray deposited AZO thin films. Optical micrographs confirmed the presence of surface defects and cracks using the AZO NPs ink without any additives. After adding N-(2-Aminoethyl)-3-aminopropylmethyldimethoxy silane to the ink, AZO films exhibited an optical transparency which was virtually identical to that of the plain glass substrate. PMID:24763438

  19. Compositional inhomogeneities in AlGaN thin films grown by molecular beam epitaxy: Effect on MSM UV photodetectors

    NASA Astrophysics Data System (ADS)

    Pramanik, Pallabi; Sen, Sayantani; Singha, Chirantan; Roy, Abhra Shankar; Das, Alakananda; Sen, Susanta; Bhattacharyya, A.

    2016-10-01

    Ultraviolet (UV) MSM photodetectors (PD) based on AlGaN alloys find many applications, including flame sensing. In this work we investigate the dependence of AlGaN based photodetectors grown by MBE on the kinetics of growth. MSM photodetectors were fabricated in the interdigitated configuration with Ni/Au contacts having 400 μm finger length and 10 μm finger spacing. Bulk Al0.4Ga0.6N films were grown on to sapphire substrates using an AlN buffer layer. A series of PDs were developed using the Al0.4Ga0.6N films grown under different group III/V flux ratios ranging from stoichiometric conditions to much higher than unity. Upon testing, it was observed that the otherwise identical photodetectors show significant decrease in dark current as AlGaN deposition conditions change from stoichiometric to excess group III, due to reduction of unintentional incorporation of oxygen-related point defects. In addition, the intensity and spectral dependence of the photocurrent also change, showing an extended low energy tail for the former and a sharp and prominent excitonic peak for the latter. The optical transmission measurements indicate a variation in Urbach energy with deposition conditions of the AlGaN films, although they have the same absorption edge. While all samples show a single red-shifted photoluminescence peak at room temperature, upon cooling, multiple higher energy peaks appear in the photoluminescence (PL) spectra, indicating that the alloys contain complex compositional inhomogeneities. Two types of alloy fluctuations, determined by the growth conditions, have been identified that modulate the optoelectronic properties of AlGaN by changing the spatial localization of excitons, thereby altering their stability. We identified that growth under stoichiometric conditions leads to compositional inhomogeneities that play a detrimental role in the operation of MSM photodetectors, which reduces the sharpness of the sensitivity edge, while growth under excess metal

  20. Ultrasonic spray pyrolysis growth of ZnO and ZnO:Al nanostructured films: Application to photocatalysis

    SciTech Connect

    Kenanakis, G.; Katsarakis, N.

    2014-12-15

    Highlights: • Al–ZnO thin films and nanostructures were obtained by ultrasonic spray pyrolysis. • The texture and morphology of the samples depend on the deposition parameters. • The photocatalytic degradation of stearic acid was studied upon UV-A irradiation. - Abstract: Pure and Al-doped ZnO (Al = 1, 3, 5%) nanostructured thin films were grown at 400 °C on glass substrates by ultrasonic spray pyrolysis, a simple, environmental-friendly and inexpensive method, using aqueous solutions as precursors. The structural and morphological characteristics of the samples depend drastically on deposition parameters; ZnO nanostructured films, nanopetals and nanorods were systematically obtained by simply varying the precursor solution and/or the spraying time. Transmittance measurements have shown that all samples are transparent in the visible wavelength region. Finally, the photocatalytic properties of the samples were investigated against the degradation of stearic acid under UV-A light illumination (365 nm); both pure and Al-doped ZnO nanostructured thin films show good photocatalytic activity regarding the degradation of stearic acid, due to their good crystallinity and large surface area.

  1. Mechanical properties of Ta-Al-N thin films deposited by cylindrical DC magnetron sputtering: Influence of N2% in the gas mixture

    NASA Astrophysics Data System (ADS)

    Darabi, Elham; Moghaddasi, Naghmeh; Reza Hantehzadeh, Mohammad

    2016-06-01

    Ta-Al-N thin films were deposited by cylindrical DC magnetron sputtering on a stainless steel substrate under varying nitrogen flow ratios ( N2 with respect to N2 + Ar in the range of 1.5%-9%. The effect of the N2 content in the reactive gas mixture on crystalline structure, surface morphology, and mechanical properties of Ta-Al-N thin films was investigated. The amount of Al and Ta in deposited films was obtained by energy dispersive X-ray spectroscopy (EDX) analysis and films thickness was measured by surface step profilometer. X-ray diffraction analysis (XRD) revealed that the crystalline structure of the Ta-Al-N polycrystalline thin film is a mixture of TaAl, TaN, and AlN crystalline phases. Surface morphology, roughness, and grain size were investigated by atomic force microscopy (AFM). The nano hardness of Ta-Al-N thin films, measured by the nanoindentation method, was about 9GPa maximum for samples prepared under 3% N2 , and the friction coefficient, obtained by nanoscratch analysis, was approximately 0.2 for all Ta-Al-N thin films. Other results were found to be affected considerably by increasing the N2 amount.

  2. High performance AlScN thin film based surface acoustic wave devices with large electromechanical coupling coefficient

    SciTech Connect

    Wang, Wenbo; He, Xingli; Ye, Zhi E-mail: jl2@bolton.ac.uk; Wang, Xiaozhi; Mayrhofer, Patrick M.; Gillinger, Manuel; Bittner, Achim; Schmid, Ulrich

    2014-09-29

    AlN and AlScN thin films with 27% scandium (Sc) were synthesized by DC magnetron sputtering deposition and used to fabricate surface acoustic wave (SAW) devices. Compared with AlN-based devices, the AlScN SAW devices exhibit much better transmission properties. Scandium doping results in electromechanical coupling coefficient, K{sup 2}, in the range of 2.0% ∼ 2.2% for a wide normalized thickness range, more than a 300% increase compared to that of AlN-based SAW devices, thus demonstrating the potential applications of AlScN in high frequency resonators, sensors, and high efficiency energy harvesting devices. The coupling coefficients of the present AlScN based SAW devices are much higher than that of the theoretical calculation based on some assumptions for AlScN piezoelectric material properties, implying there is a need for in-depth investigations on the material properties of AlScN.

  3. Microstructure and dielectric properties of piezoelectric magnetron sputtered w-ScxAl1-xN thin films

    SciTech Connect

    Zukauskaite, Agne; Wingqvist, Gunilla; Palisaitis, Justinas; Jensen, Jens; Persson, Per; Matloub, Ramin; Muralt, Paul; Kim, Yunseok; Birch, Jens; Hultman, Lars

    2012-01-01

    Piezoelectric wurtzite ScxAl1 xN (x = 0, 0.1, 0.2, 0.3) thin films were epitaxially grown by reactive magnetron co-sputtering from elemental Sc and Al targets. Al2O3(0001) wafers with TiN(111) seed and electrode layers were used as substrates. X-ray diffraction shows that an increase in the Sc content results in the degradation of the crystalline quality. Samples grown at 400 C possess true dielectric behavior with quite low dielectric losses and the leakage current is negligible. For ScAlN samples grown at 800 C, the crystal structure is poor and leakage current is high. Transmission electron microscopy with energy dispersive x-ray spectroscopy mapping shows a mass separation into ScN-rich and AlN-rich domains for x 0.2 when substrate temperature is increased from 400 to 800 C. The piezoelectric response of epitaxial ScxAl1 xN films measured by piezoresponse force microscopy and double beam interferometry shows up to 180% increase by the addition of Sc up to x = 0.2 independent of substrate temperature, in good agreement with previous theoretical predictions based on density-functional theory.

  4. Atomic moments in Mn2CoAl thin films analyzed by X-ray magnetic circular dichroism

    DOE PAGES

    Jamer, M. E.; Assaf, B. A.; Sterbinsky, G. E.; Arena, D. A.; Heiman, D.

    2014-12-05

    Spin gapless semiconductors are known to be strongly affected by structural disorder when grown epitaxially as thin films. The magnetic properties of Mn2CoAl thin films grown on GaAs (001) substrates are investigated here as a function of annealing. This study investigates the atomic-specific magnetic moments of Mn and Co atoms measured through X-ray magnetic circular dichroism as a function of annealing and the consequent structural ordering. Results indicate that the structural distortion mainly affects the Mn atoms as seen by the reduction of the magnetic moment from its predicted value.

  5. The impact of ultrathin Al2O3 films on the electrical response of p-Ge/Al2O3/HfO2/Au MOS structures

    NASA Astrophysics Data System (ADS)

    Botzakaki, M. A.; Skoulatakis, G.; Kennou, S.; Ladas, S.; Tsamis, C.; Georga, S. N.; Krontiras, C. A.

    2016-09-01

    It is well known that the most critical issue in Ge CMOS technology is the successful growth of high-k gate dielectrics on Ge substrates. The high interface quality of Ge/high-k dielectric is connected with advanced electrical responses of Ge based MOS devices. Following this trend, atomic layer deposition deposited ultrathin Al2O3 and HfO2 films were grown on p-Ge. Al2O3 acts as a passivation layer between p-Ge and high-k HfO2 films. An extensive set of p-Ge/Al2O3/HfO2 structures were fabricated with Al2O3 thickness ranging from 0.5 nm to 1.5 nm and HfO2 thickness varying from 2.0 nm to 3.0 nm. All structures were characterized by x-ray photoelectron spectroscopy (XPS) and AFM. XPS analysis revealed the stoichiometric growth of both films in the absence of Ge sub-oxides between p-Ge and Al2O3 films. AFM analysis revealed the growth of smooth and cohesive films, which exhibited minimal roughness (~0.2 nm) comparable to that of clean bare p-Ge surfaces. The electrical response of all structures was analyzed by C-V, G-V, C-f, G-f and J-V characteristics, from 80 K to 300 K. It is found that the incorporation of ultrathin Al2O3 passivation layers between p-Ge and HfO2 films leads to superior electrical responses of the structures. All structures exhibit well defined C-V curves with parasitic effects, gradually diminishing and becoming absent below 170 K. D it values were calculated at each temperature, using both Hill-Coleman and Conductance methods. Structures of p-Ge/0.5 nm Al2O3/2.0 nm HfO2/Au, with an equivalent oxide thickness (EOT) equal to 1.3 nm, exhibit D it values as low as ~7.4  ×  1010 eV-1 cm-2. To our knowledge, these values are among the lowest reported. J-V measurements reveal leakage currents in the order of 10-1 A cm-2, which are comparable to previously published results for structures with the same EOT. A complete mapping of the energy distribution of D its into the energy bandgap of p-Ge, from the valence band

  6. The impact of ultrathin Al2O3 films on the electrical response of p-Ge/Al2O3/HfO2/Au MOS structures

    NASA Astrophysics Data System (ADS)

    Botzakaki, M. A.; Skoulatakis, G.; Kennou, S.; Ladas, S.; Tsamis, C.; Georga, S. N.; Krontiras, C. A.

    2016-09-01

    It is well known that the most critical issue in Ge CMOS technology is the successful growth of high-k gate dielectrics on Ge substrates. The high interface quality of Ge/high-k dielectric is connected with advanced electrical responses of Ge based MOS devices. Following this trend, atomic layer deposition deposited ultrathin Al2O3 and HfO2 films were grown on p-Ge. Al2O3 acts as a passivation layer between p-Ge and high-k HfO2 films. An extensive set of p-Ge/Al2O3/HfO2 structures were fabricated with Al2O3 thickness ranging from 0.5 nm to 1.5 nm and HfO2 thickness varying from 2.0 nm to 3.0 nm. All structures were characterized by x-ray photoelectron spectroscopy (XPS) and AFM. XPS analysis revealed the stoichiometric growth of both films in the absence of Ge sub-oxides between p-Ge and Al2O3 films. AFM analysis revealed the growth of smooth and cohesive films, which exhibited minimal roughness (~0.2 nm) comparable to that of clean bare p-Ge surfaces. The electrical response of all structures was analyzed by C–V, G–V, C–f, G–f and J–V characteristics, from 80 K to 300 K. It is found that the incorporation of ultrathin Al2O3 passivation layers between p-Ge and HfO2 films leads to superior electrical responses of the structures. All structures exhibit well defined C–V curves with parasitic effects, gradually diminishing and becoming absent below 170 K. D it values were calculated at each temperature, using both Hill–Coleman and Conductance methods. Structures of p-Ge/0.5 nm Al2O3/2.0 nm HfO2/Au, with an equivalent oxide thickness (EOT) equal to 1.3 nm, exhibit D it values as low as ~7.4  ×  1010 eV‑1 cm‑2. To our knowledge, these values are among the lowest reported. J–V measurements reveal leakage currents in the order of 10–1 A cm‑2, which are comparable to previously published results for structures with the same EOT. A complete mapping of the energy distribution of D its into the energy bandgap of p-Ge, from

  7. Passivation mechanism of thermal atomic layer-deposited Al2O3 films on silicon at different annealing temperatures

    PubMed Central

    2013-01-01

    Thermal atomic layer-deposited (ALD) aluminum oxide (Al2O3) acquires high negative fixed charge density (Qf) and sufficiently low interface trap density after annealing, which enables excellent surface passivation for crystalline silicon. Qf can be controlled by varying the annealing temperatures. In this study, the effect of the annealing temperature of thermal ALD Al2O3 films on p-type Czochralski silicon wafers was investigated. Corona charging measurements revealed that the Qf obtained at 300°C did not significantly affect passivation. The interface-trapping density markedly increased at high annealing temperature (>600°C) and degraded the surface passivation even at a high Qf. Negatively charged or neutral vacancies were found in the samples annealed at 300°C, 500°C, and 750°C using positron annihilation techniques. The Al defect density in the bulk film and the vacancy density near the SiOx/Si interface region decreased with increased temperature. Measurement results of Qf proved that the Al vacancy of the bulk film may not be related to Qf. The defect density in the SiOx region affected the chemical passivation, but other factors may dominantly influence chemical passivation at 750°C. PMID:23452508

  8. Growth of AlInN film on GaAs substrate and its application to MSM UV photodetector

    NASA Astrophysics Data System (ADS)

    Afzal, Naveed; Devarajan, Mutharasu; Ibrahim, Kamarulazizi

    2016-08-01

    AlInN film was grown on n-type GaAs (100) substrate by using reactive magnetron co-sputtering technique at 100 °C. The structural analysis revealed polycrystalline nature of the film with its preferred orientation along (002) plane. The band gap of AlInN was estimated to be 3.39 eV from UV-vis reflectance measurements. In order to fabricate AlInN based metal-semiconductor-metal (MSM) photodetector, platinum (Pt) metal contacts were deposited on the film through RF sputtering. The Pt/AlInN/Pt/GaAs MSM photodetector displayed good responsivity under 365 nm UV light. The current-voltage characteristics of the fabricated photodetector showed significant increase in current upon exposure to 365 nm UV light. The current gain for the MSM photodetector under 365 nm UV light at 5 V bias was recorded to be 29.4 whereas the sensitivity of the photodetector was noted to be 2.9 × 103. The response and recovery time were estimated to be 0.70 and 0.72 s respectively. The fabricated device exhibited excellent stability in ON/OFF switching conditions.

  9. Amorphous ZnAlSnO thin-film transistors by a combustion solution process for future displays

    SciTech Connect

    Jiang, Qingjun; Feng, Lisha; Wu, Chuanjia; Sun, Rujie; Lu, Bin; Ye, Zhizhen; Lu, Jianguo; Li, Xifeng

    2015-02-02

    A combustion solution method was developed to fabricate amorphous ZnAlSnO (a-ZATO) for thin-film transistors (TFTs). The properties of a-ZATO films and behaviors of a-ZATO TFTs were studied in detail. An appropriate Al content in the matrix could suppress the formation of oxygen vacancies efficiently and achieve densely amorphous films. The a-ZATO TFTs exhibited acceptable performances, with an on/off current ratio of ∼10{sup 6}, field-effect mobility of 2.33 cm{sup 2}·V{sup −1}·S{sup −1}, threshold voltage of 2.39 V, and subthreshold swing of 0.52 V/decade at an optimal Al content (0.5). The relation between on- and off-resistance of the ZATO TFT was also within the range expected for fast switching devices. More importantly, the introduced Al with an appropriate content had the ability to evidently enhance the device long-term stability under working bias stress and storage durations. The obtained indium- and gallium-free a-ZATO TFTs are very promising for the next-generation displays.

  10. Controlled direct growth of Al2O3-doped HfO2 films on graphene by H2O-based atomic layer deposition.

    PubMed

    Zheng, Li; Cheng, Xinhong; Yu, Yuehui; Xie, Yahong; Li, Xiaolong; Wang, Zhongjian

    2015-02-01

    Graphene has been drawing worldwide attention since its discovery in 2004. In order to realize graphene-based devices, thin, uniform-coverage and pinhole-free dielectric films with high permittivity on top of graphene are required. Here we report the direct growth of Al2O3-doped HfO2 films onto graphene by H2O-based atom layer deposition (ALD). Al2O3-onto-HfO2 stacks benefited the doping of Al2O3 into HfO2 matrices more than HfO2-onto-Al2O3 stacks did due to the micro-molecular property of Al2O3 and the high chemical activity of trimethylaluminum (TMA). Al2O3 acted as a network modifier, maintained the amorphous structure of the film even to 800 °C, and made the film smooth with a root mean square (RMS) roughness of 0.8 nm, comparable to the surface of pristine graphene. The capacitance and the relative permittivity of Al2O3-onto-HfO2 stacks were up to 1.18 μF cm(-2) and 12, respectively, indicating the high quality of Al2O3-doped HfO2 films on graphene. Moreover, the growth process of Al2O3-doped HfO2 films introduced no detective defects into graphene confirmed by Raman measurements. PMID:25519447

  11. Effects of the ratio of O2/Ar pressure on wettability and optical properties of HfO2 films before and after doping with Al

    NASA Astrophysics Data System (ADS)

    Lin, Su-Shia; Liao, Chung-Sheng

    2016-09-01

    HfO2 films were doped with Al (HfO2:Al) by simultaneous RF magnetron sputtering of HfO2 and DC magnetron sputtering of Al. This method is characterized by its ability to independently control the Al content. According to XRD and XPS analyses, the HfO2:Al film had a structure similar to that of HfO2 film, and most of the Al atoms were not in the HfO2 crystalline. A small amount of Al3+ dopant could transform the hydrophobicity of HfO2 films into hydrophilicity. Moreover, the hydrophilicity of the HfO2:Al films improved as the ratio of O2/Ar pressure increased. The nonlinear refractive indices of HfO2 and HfO2:Al films deposited in a pure Ar or a mixed Ar-O2 atmosphere were measured by Moiré deflectometry, and were of the order of 10-8 cm2 W-1. A lower surface roughness, higher optical transmission in the UV-vis-NIR region, and higher linear refractive index were obtained at a higher ratio of O2/Ar pressure.

  12. Impact of titanium layer and silicon substrate properties on the microstructure of c-axis oriented AlN thin films

    NASA Astrophysics Data System (ADS)

    Wistrela, E.; Bittner, A.; Schmid, U.

    2015-05-01

    Highly c-axis orientated sputter deposited aluminium nitride (AlN) thin films are widely used as piezoelectric layers in micro-electro-mechanical systems (MEMS). Therefore, stable and reliable deposition and patterning of the AlN thin films in the fabrication process of such devices is of utmost importance. In this work, we study the wet chemical etching behavior of highly c-axis oriented AlN layers as well as the film-related residuals after the etching procedure. To investigate the impact of the underlying material on the quality of the AlN films they are either deposited on pure silicon (Si) substrates or on Si substrates covered with a sputter-deposited thin titanium (Ti) film. The 620 nm thin AlN layers are synthesized simultaneously onto both substrate types and subsequently wet-chemical etched in a phosphorous acid based etching solution at a temperature of 80°C. We demonstrate a significant difference in surface roughness of the untreated AlN films when sputter-deposited on Ti or pure Si. Furthermore, we analyze the piezoelectric properties of the deposited films. Although the XRD analyses indicate a high c-axis orientated wurtzite structure for all deposited films, the absolute value of the piezoelectric coefficients |d33| of AlN thin films synthesized on Ti are 0.4-4.3 pC/N, whereas corresponding values of 5.2-6 pC/N are determined at those deposited on pure Si substrates,. Finally, after wet chemically etching a porous, but homogeneous AlN microstructure is observed for samples synthesized onto Ti layers, whereas AlN layers deposited directly on Si substrate are either etched very inhomogenously or almost completely with some etch resistant pyramidal-shaped residues. This might be due to a local change in polarity within the AlN layer.

  13. Effect of SiC interlayer between Ti6Al4V alloy and hydroxyapatite films.

    PubMed

    Azem, Funda Ak; Birlik, Isil; Braic, Viorel; Toparli, Mustafa; Celik, Erdal; Parau, Anca; Kiss, Adrian; Titorencu, Irina; Vladescu, Alina

    2015-04-01

    Bioactive coatings are frequently used to improve the osseointegration of the metallic implants used in dentistry or orthopaedics. Among different types of bioactive coatings, hydroxyapatite (Ca10(PO4)6(OH)2) is one of the most extensively used due to its chemical similarities to the components of bones and teeth. In this article, production and characterization of hydroxyapatite films deposited on Ti6Al4V alloy prepared by magnetron sputtering were reported. Besides, SiC was deposited on substrate surface to study the interlayer effect. Obtained coatings were annealed at 600 °C for 30 and 120 min in a mixed atmosphere of N2 + H2O vapours with the heating rate of 12 °C min(-1). The effects of SiC interlayer and heat treatment parameters on the structural, mechanical and corrosion properties were investigated. After heat treatment process, the crystalline hydroxyapatite was obtained. Additionally, cell viability tests were performed. The results show that the presence of the SiC interlayer contributes a decrease in surface roughness and improves the mechanical properties and corrosion performance of the hydroxyapatite coatings. Biological properties were not affected by the presence of the SiC interlayer. PMID:25934259

  14. Electrochemical Evaluation of Nanocrystalline Diamond Thin Films on Ti-6Al-4V Implant Alloy

    NASA Astrophysics Data System (ADS)

    Fries, Marc; Venugopalan, Ramakrishna; Vohra, Yogesh

    2002-03-01

    Some 186,000 hip replacement surgeries are peformed every year in the United States alone. About 10surgeries are revision operations to replace an implant that has most likely failed through mechanical-electrochemical interactions resulting in implant wear. The ability to enhance the resistance to such mechanical-electrochemical interaction and thereby reduce wear could result in significantly increased device lifespan. Nanocrystalline diamond (NCD) thin films were deposited on Ti-6Al-4V disk samples (processed per ASTM F86 standard for medical implant surface conditions) using microwave plasma chemical vapor deposition (MPCVD). As a first step, these samples (n=3/test per group) were subjected to electrochemical evaluation in inorganic neutral salt solution at 37 C. The electrochemical evaluation involved both impedence spectroscopy (per ASTM G106) and polarization testing (per ASTM G5). The impedence spectroscopy data indicated a significantly higher charge transfer resistance at the interface due to the protective NCD as compared to the bare or uncoated substrate. The polarization test data confirmed that this increased charge transfer resistance resulted in a decreased current density measurement. This decreased current density measurement resulted in an order of magnitude lower calculated static corrosion rate from the NCD coated samples as opposed to the uncoated controls. Future studies will focus on investigations that will facilitate transfer of these static electrochemical resistance results to a more relevant mechanical-electrochemical interaction milieu.

  15. Orbital two-channel Kondo effect in epitaxial ferromagnetic L10-MnAl films

    DOE PAGES

    Zhu, L. J.; Nie, S. H.; Xiong, P.; Schlottmann, P.; Zhao, J. H.

    2016-02-24

    The orbital two-channel Kondo effect displaying exotic non-Fermi liquid behaviour arises in the intricate scenario of two conduction electrons compensating a pseudo-spin-1/2 impurity of two-level system. Despite extensive efforts for several decades, no material system has been clearly identified to exhibit all three transport regimes characteristic of the two-channel Kondo effect in the same sample, leaving the interpretation of the experimental results a subject of debate. Here we present a transport study suggestive of a robust orbital two-channel Kondo effect in epitaxial ferromagnetic L10-MnAl films, as evidenced by a magnetic field-independent resistivity upturn with a clear transition from logarithmic- tomore » square-root temperature dependence and deviation from it in three distinct temperature regimes. Lastly, our results also provide an experimental indication of the presence of two-channel Kondo physics in a ferromagnet, pointing to considerable robustness of the orbital two-channel Kondo effect even in the presence of spin polarization of the conduction electrons.« less

  16. Orbital two-channel Kondo effect in epitaxial ferromagnetic L10-MnAl films

    PubMed Central

    Zhu, L. J.; Nie, S. H.; Xiong, P.; Schlottmann, P.; Zhao, J. H.

    2016-01-01

    The orbital two-channel Kondo effect displaying exotic non-Fermi liquid behaviour arises in the intricate scenario of two conduction electrons compensating a pseudo-spin-1/2 impurity of two-level system. Despite extensive efforts for several decades, no material system has been clearly identified to exhibit all three transport regimes characteristic of the two-channel Kondo effect in the same sample, leaving the interpretation of the experimental results a subject of debate. Here we present a transport study suggestive of a robust orbital two-channel Kondo effect in epitaxial ferromagnetic L10-MnAl films, as evidenced by a magnetic field-independent resistivity upturn with a clear transition from logarithmic- to square-root temperature dependence and deviation from it in three distinct temperature regimes. Our results also provide an experimental indication of the presence of two-channel Kondo physics in a ferromagnet, pointing to considerable robustness of the orbital two-channel Kondo effect even in the presence of spin polarization of the conduction electrons. PMID:26905518

  17. Dynamic Friction Performance of a Pneumatic Cylinder with Al2O3 Film on Cylinder Surface.

    PubMed

    Chang, Ho; Lan, Chou-Wei; Wang, Hao-Xian

    2015-11-01

    A friction force system is proposed for accurately measuring friction force and motion properties produced by reciprocating motion of piston in a pneumatic cylinder. In this study, the proposed system is used to measure the effects of lubricating greases of different viscosities on the friction properties of pneumatic cylinder, and improvement of stick-slip motion for the cylinder bore by anodizing processes. A servo motor-driven ball screw is used to drive the pneumatic cylinder to be tested and to measure the change in friction force of the pneumatic cylinder. Experimental results show, that under similar test conditions, the lubricating grease with viscosity VG100 is best suited for measuring reciprocating motion of the piston of pneumatic cylinder. The wear experiment showed that, in the Al2O3 film obtained at a preset voltage 40 V in the anodic process, the friction coefficient and hardness decreased by 55% and increased by 274% respectively, thus achieving a good tribology and wear resistance. Additionally, the amplitude variation in the friction force of the pneumatic cylinder wall that received the anodizing treatment was substantially reduced. Additionally, the stick-slip motion of the pneumatic cylinder during low-speed motion was substantially improved. PMID:26726680

  18. Features of AlN film grown by ion-plasma sputtering

    NASA Astrophysics Data System (ADS)

    Lubyanskiy, Ya V.; Bondarev, A. D.; Soshnikov, I. P.; Kotlyar, K. P.; Kirilenko, D. A.; Bert, N. A.; Ayusheva, K. R.; Tarasov, I. S.

    2016-08-01

    The work under consideration presents research of structure, composition and optical properties of aluminium nitride thin films grown by reactive ion plasma sputtering. Aluminium nitride films are shown to contain amorphous and polycrystalline phases. Amorphous phase presence influences on refraction and absorption indexes. Conditions of polycrystalline films with primary (dedicated) orientation synthesis are revealed.

  19. Atomic layer deposited alumina (Al2O3) thin films on a high-Q mechanical silicon oscillator

    NASA Astrophysics Data System (ADS)

    Hahtela, O.; Sievilä, P.; Chekurov, N.; Tittonen, I.

    2007-04-01

    In this paper, the influence of the atomic layer deposited alumina (Al2O3) thin films on the dynamics of a high-Q mechanical silicon oscillator was experimentally studied. The resonance frequency and Q value of uncoated oscillators used in this work were about f0 = 27 kHz and Q = 100 000 at p < 10-2 mbar and T = 300 K. Deposited alumina film thicknesses varied from 5 to 662 nm. It is demonstrated that the resonance frequency of the mechanical oscillator increases with the film thickness because the added alumina films effectively stiffen the oscillator structure. In addition, it is shown that alumina thin films with thickness up to 100 nm can be deposited on microfabricated mechanical resonant structures without degrading the initially high quality (Q value) of the resonance. The resonance frequency of the silicon oscillator was less sensitive to the changes in ambient temperature with thicker alumina coatings. The reflectivity of silicon at 633 nm was reduced from RSi = 0.35 to RAR = 0.035 by coating the silicon oscillator with an alumina film whose thickness corresponds to the quarter of the optical wavelength serving as a single-layer anti-reflection coating.

  20. Influences of different structures on the characteristics of H2O-based and O3-based La x Al y O films deposited by atomic layer deposition

    NASA Astrophysics Data System (ADS)

    Chen-Xi, Fei; Hong-Xia, Liu; Xing, Wang; Dong-Dong, Zhao; Shu-Long, Wang; Shu-Peng, Chen

    2016-05-01

    H2O-based and O3-based La x Al y O nanolaminate films were deposited on Si substrates by atomic layer deposition (ALD). Structures and performances of the films were changed by different barrier layers. The effects of different structures on the electrical characteristics and physical properties of the La x Al y O films were studied. Chemical bonds in the La x Al y O films grown with different structures and different oxidants were also investigated with x-ray photoelectron spectroscopy (XPS). The preliminary testing results indicate that the La x Al y O films with different structures and different oxidants show different characteristics, including dielectric constant, equivalent oxide thickness (EOT), electrical properties, and stability. Project supported supported by the National Natural Science Foundation of China (Grant Nos. 61376099 and 61434007).

  1. Comparison of the sputter rates of oxide films relative to the sputter rate of SiO{sub 2}

    SciTech Connect

    Baer, D. R.; Engelhard, M. H.; Lea, A. S.; Nachimuthu, P.; Droubay, T. C.; Kim, J.; Lee, B.; Mathews, C.; Opila, R. L.; Saraf, L. V.; Stickle, W. F.; Wallace, R. M.; Wright, B. S.

    2010-09-15

    There is a growing interest in knowing the sputter rates for a wide variety of oxides because of their increasing technological importance in many different applications. To support the needs of users of the Environmental Molecular Sciences Laboratory, a national scientific user facility, as well as our research programs, the authors made a series of measurements of the sputter rates from oxide films that have been grown by oxygen plasma-assisted molecular beam epitaxy, pulsed laser deposition, atomic layer deposition, electrochemical oxidation, or sputter deposition. The sputter rates for these oxide films were determined in comparison with those from thermally grown SiO{sub 2}, a common reference material for sputter rate determination. The film thicknesses and densities for most of these oxide films were measured using x-ray reflectivity. These oxide films were mounted in an x-ray photoelectron or Auger electron spectrometer for sputter rate measurements using argon ion sputtering. Although the primary objective of this work was to determine relative sputter rates at a fixed angle, the measurements also examined (i) the angle dependence of the relative sputter rates, (ii) the energy dependence of the relative sputter rates, and (iii) the extent of ion beam induced reduction for some oxides. Oxide films examined include SiO{sub 2}, Al{sub 2}O{sub 3}, CeO{sub 2}, Cr{sub 2}O{sub 3}, Fe{sub 2}O{sub 3}, HfO{sub 2}, In-Sn oxide, Ta{sub 2}O{sub 5}, TiO{sub 2} (anatase, rutile, and amorphous), and ZnO. The authors found that the sputter rates for the oxides can vary up to a factor of 2 (usually lower) from that observed for SiO{sub 2}. The ratios of sputter rates relative to those of SiO{sub 2} appear to be relatively independent of ion beam energy in the range of 1-4 kV and for incident angles <50 deg. As expected, the extent of ion beam induced reduction of the oxides varies with the sputter angle.

  2. Electronic defects and interface potentials for Al oxide films on Al and their relationship to electrochemical properties

    SciTech Connect

    SULLIVAN,JOHN P.; DUNN,ROBERTO G.; BARBOUR,J. CHARLES; WALL,FREDERICK D.; MISSERT,NANCY A.; BUCHHEIT,R.G.

    2000-06-01

    The relative electronic defect densities and oxide interface potentials were determined for naturally-occurring and synthetic Al oxides on Al. In addition, the effect of electrochemical treatment on the oxide electrical properties was assessed. The measurements revealed (1) that the open circuit potential of Al in aqueous solution is inversely correlated with the oxide electronic defect density (viz., lower oxide conductivities are correlated with higher open circuit potentials), and (2) the electronic defect density within the Al oxide is increased upon exposure to an aqueous electrolyte at open circuit or applied cathodic potentials, while the electronic defect density is reduced upon exposure to slight anodic potentials in solution. This last result, combined with recent theoretical predictions, suggests that hydrogen may be associated with electronic defects within the Al oxide, and that this H may be a mobile species, diffusing as H{sup +}. The potential drop across the oxide layer when immersed in solution at open circuit conditions was also estimated and found to be 0.3 V, with the field direction attracting positive charge towards the Al/oxide interface.

  3. Subjective image quality comparison between two digital dental radiographic systems and conventional dental film

    PubMed Central

    Ajmal, Muhammed; Elshinawy, Mohamed I.

    2014-01-01

    Objectives Digital radiography has become an integral part of dentistry. Digital radiography does not require film or dark rooms, reduces X-ray doses, and instantly generates images. The aim of our study was to compare the subjective image quality of two digital dental radiographic systems with conventional dental film. Materials & methods A direct digital (DD) ‘Digital’ system by Sirona, a semi-direct (SD) digital system by Vista-scan, and Kodak ‘E’ speed dental X-ray films were selected for the study. Endodontically-treated extracted teeth (n = 25) were used in the study. Details of enamel, dentin, dentino-enamel junction, root canal filling (gutta percha), and simulated apical pathology were investigated with the three radiographic systems. The data were subjected to statistical analyzes to reveal differences in subjective image quality. Results Conventional dental X-ray film was superior to the digital systems. For digital systems, DD imaging was superior to SD imaging. Conclusion Conventional film yielded superior image quality that was statistically significant in almost all aspects of comparison. Conventional film was followed in image quality by DD, and SD provided the lowest quality images. Conventional film is still considered the gold standard to diagnose diseases affecting the jawbone. Recommendations Improved software and hardware for digital imaging systems are now available and these improvements may now yield images that are comparable in quality to conventional film. However, we recommend that studies still use more observers and other statistical methods to produce ideal results. PMID:25382946

  4. Unveiling the Mechanism for the Split Hysteresis Loop in Epitaxial Co2Fe1-xMnxAl Full-Heusler Alloy Films.

    PubMed

    Tao, X D; Wang, H L; Miao, B F; Sun, L; You, B; Wu, D; Zhang, W; Oepen, H P; Zhao, J H; Ding, H F

    2016-01-01

    Utilizing epitaxial Co2Fe1-xMnxAl full-Heusler alloy films on GaAs (001), we address the controversy over the analysis for the split hysteresis loop which is commonly found in systems consisting of both uniaxial and fourfold anisotropies. Quantitative comparisons are carried out on the values of the twofold and fourfold anisotropy fields obtained with ferromagnetic resonance and vibrating sample magnetometer measurements. The most suitable model for describing the split hysteresis loop is identified. In combination with the component resolved magnetization measurements, these results provide compelling evidences that the switching is caused by the domain wall nucleation and movements with the switching fields centered at the point where the energy landscape shows equal minima for magnetization orienting near the easy axis and the field supported hard axis.

  5. Unveiling the Mechanism for the Split Hysteresis Loop in Epitaxial Co2Fe1-xMnxAl Full-Heusler Alloy Films

    PubMed Central

    Tao, X. D.; Wang, H. L.; Miao, B. F.; Sun, L.; You, B.; Wu, D.; Zhang, W.; Oepen, H. P.; Zhao, J. H.; Ding, H. F.

    2016-01-01

    Utilizing epitaxial Co2Fe1-xMnxAl full-Heusler alloy films on GaAs (001), we address the controversy over the analysis for the split hysteresis loop which is commonly found in systems consisting of both uniaxial and fourfold anisotropies. Quantitative comparisons are carried out on the values of the twofold and fourfold anisotropy fields obtained with ferromagnetic resonance and vibrating sample magnetometer measurements. The most suitable model for describing the split hysteresis loop is identified. In combination with the component resolved magnetization measurements, these results provide compelling evidences that the switching is caused by the domain wall nucleation and movements with the switching fields centered at the point where the energy landscape shows equal minima for magnetization orienting near the easy axis and the field supported hard axis. PMID:26733075

  6. Oxide film on 5052 aluminium alloy: Its structure and removal mechanism by activated CsF-AlF3 flux in brazing

    NASA Astrophysics Data System (ADS)

    Xiao, Bing; Wang, Dongpo; Cheng, Fangjie; Wang, Ying

    2015-05-01

    The oxide-film structure on the 5052 Al alloy and the film-removal mechanism by activated CsF-AlF3 flux in brazing were studied. Characterisation of the oxide film shows that thermally activated Mg, segregated from the alloy's interior, was significantly enriched and oxidised during medium-temperature brazing. Thus, the outer oxide surface consisted of the amorphous MgO-like phase, and the interior of the oxide film comprised mainly the amorphous MgO-like phase and dispersely distributed and less-ordered MgAl2O4. The MgO-like phase was the main obstacle to oxide removal in brazing. The activated ZnCl2-containing CsF-AlF3 flux effectively removed the oxide film, and the 5052 Al alloy was successfully brazed by the Zn-Al filler metal and activated flux. When Zn2+ in the molten flux permeated the oxide film through cracks, its chemical reaction with the Al substrate loosened the oxide film, which was eventually pushed out as the filler metal spread over the alloy surface.

  7. Influence of argon plasma on the deposition of Al2O3 film onto the PET surfaces by atomic layer deposition

    PubMed Central

    2013-01-01

    In this paper, polyethyleneterephthalate (PET) films with and without plasma pretreatment were modified by atomic layer deposition (ALD) and plasma-assisted atomic layer deposition (PA-ALD). It demonstrates that the Al2O3 films are successfully deposited onto the surface of PET films. The cracks formed on the deposited Al2O3 films in the ALD, plasma pretreated ALD, and PA-ALD were attributed to the energetic ion bombardment in plasmas. The surface wettability in terms of water contact angle shows that the deposited Al2O3 layer can enhance the wetting property of modified PET surface. Further characterizations of the Al2O3 films suggest that the elevated density of hydroxyl -OH group improve the initial growth of ALD deposition. Chemical composition of the Al2O3-coated PET film was characterized by X-ray photoelectron spectroscopy, which shows that the content of C 1s reduces with the growing of O 1s in the Al2O3-coated PET films, and the introduction of plasma in the ALD process helps the normal growth of Al2O3 on PET in PA-ALD. PMID:23413804

  8. Mössbauer spectroscopy study of Al distribution in BaAl{sub x}Fe{sub 12−x}O{sub 19} thin films

    SciTech Connect

    Przybylski, M. Żukrowski, J.; Harward, I.; Celiński, Z.

    2015-05-07

    Barium hexagonal ferrite (BaM) films grown on Si are a good candidate material for new-generations of on-wafer microwave devices operating at frequencies above 40 GHz. Doping BaM with Al increases the value of anisotropy field even more, and in combination with a large value of remanence, would allow one to create a self-biasing material/structure that would eliminate the need for permanent bias magnets in millimeter wave devices. To examine the occupation of Fe sublattices by Al ions, we carried out Conversion Electron Mössbauer Spectroscopy (CEMS) measurements at room temperature and zero magnetic field (after magnetizing the samples in a strong magnetic field). The spectra can be reasonably fitted with three components (sub-spectra) corresponding to different Fe sublattices. There are significant changes in the spectra with the addition of Al: The magnetic hyperfine field decreases for all three components, and their relative contributions also change remarkably. These observations are in agreement with the fact that the Al substitutes Fe, thus lowering the component contributions and the value of the hyperfine field. In addition, our previous XRD analysis indicates increasing grain misalignment with Al content, further supporting the CEMS data.

  9. Comparison of photovoltaic performance of TiO2 nanoparticles based thin films via different routes

    NASA Astrophysics Data System (ADS)

    Ji, Yajun

    2015-11-01

    Well crystallized TiO2 nanoparticles were prepared by hydrothermal and sol-gel routes, respectively. The morphologies, structures, crystallinity and optical properties of resulted TiO2 nanoparticles-based thin films via the two methods were examined by field emission scanning electron microscope (FE-SEM), transmission electron microscope (TEM), X-ray diffractometer (XRD) and reflectance spectra. In addition, comparison of photovoltaic performance of TiO2 nanoparticles-based thin films by the two methods was performed. It is found that the maximum energy conversion efficiency of 4.06% was achieved based on the obtained electrode via hydrothermal, which is much better than that of the sol-gels route. The uniform film structure with improved dye absorption capability, increased diffused reflectance property and relatively low charge recombination rates for injected electrons are believed to be responsible to the superior photoelectrochemical properties of dye-sensitized solar cells (DSSC) via hydrothermal route.

  10. Film-coupled nanoparticles by atomic layer deposition: Comparison with organic spacing layers

    SciTech Connect

    Ciracì, Cristian Mock, Jack J.; McGuire, Felicia; Liu, Xiaojun; Smith, David R.; Chen, Xiaoshu; Oh, Sang-Hyun

    2014-01-13

    Film-coupled nanoparticle systems have proven a reliable platform for exploring the field enhancement associated with sub-nanometer sized gaps between plasmonic nanostructures. In this Letter, we present a side-by-side comparison of the spectral properties of film-coupled plasmon-resonant, gold nanoparticles, with dielectric spacer layers fabricated either using atomic layer deposition or using organic layers (polyelectrolytes or self-assembled monolayers of molecules). In either case, large area, uniform spacer layers with sub-nanometer thicknesses can be accurately deposited, allowing extreme coupling regimes to be probed. The observed spectral shifts of the nanoparticles as a function of spacer layer thickness are similar for the organic and inorganic films and are consistent with numerical calculations taking into account the nonlocal response of the metal.

  11. Laser soldering of sapphire substrates using a BaTiAl6O12 thin-film glass sealant

    NASA Astrophysics Data System (ADS)

    de Pablos-Martin, A.; Tismer, S.; Benndorf, G.; Mittag, M.; Lorenz, M.; Grundmann, M.; Höche, Th.

    2016-07-01

    Two sapphire substrates are tightly bonded through a BaTiAl6O12-glass thin film, by irradiation with a nanosecond laser. After the laser process, the composition of the glass sealant changes, due to incorporation of Al2O3 from the upper substrate. After annealing of the bonded samples (950 °C for 30 minutes) crystalline structures are observed by TEM which are attributed to crystalline BaTiAl6O12. These crystals together with Al2O3:Ti centers are the responsible of the observed strong blue luminescence of the laser irradiated region upon UV excitation. The structural and optical characterizations of the bonded samples clarify the laser soldering procedure as well as the origin of the luminescence. Bond quality and bond strength were evaluated by scanning acoustic microscopy (SAM) and tensile tests, which results in a tensile stress of nearly 13 MPa, which is an acceptable value for glass sealants.

  12. Are some risk comparisons more effective under conflict?: a replication and extension of Roth et al.

    PubMed

    Johnson, Branden B

    2003-08-01

    Despite many claims for and against the use of risk comparisons in risk communication, few empirical studies have explored their effect. Only one study, published by Roth et al. in this journal in 1990, has tested the 1988 predictions by Covello et al. as to the public's relative preferences for 14 kinds of risk comparisons as they might be used by a factory manager to explain risks of his ethylene oxide plant. That study found no correlations between the Covello predictions and seven different measures of "acceptability" of Covello's examples of each type of comparison. However, two critics of the Roth study, as well as its own authors, suggested that a scenario involving local risks, a conflict-ridden situation, and a plant manager unknown to the townspeople might better evoke Covello-like preferences than the distant, calm, friends-involving scenario used by Roth. The research reported here replicated the Roth study using the same scenario, risk comparison examples, and evaluation measures, and added a second scenario intended to replicate the conditions suggested by critics. Over 200 New Jersey residents answered the study questionnaire. The replication scenario reproduced Roth's results, and the conflict scenario also evoked no rankings correlated with Covello's predictions. Furthermore, neither agreement nor disagreement with five statements representing "conflict"--respondents' reports that the industrial-plant scenario made them angry, they lived near industry, they were concerned about industrial risks, people in their home town were angry about industrial pollution, and they worried "frequently" about long-term effects of pollution--correlated with Covello's predictions. Over half of all ratings ascribed to the comparisons in aggregate were positive, and most detailed comments offered by respondents also were positive, despite many criticisms and suggestions for their improvement. The wide variability in individuals' rankings also undermines the notion of

  13. Structural, morphological and optical characterizations of ZnO:Al thin films grown on silicon substrates by pulsed laser deposition

    NASA Astrophysics Data System (ADS)

    Alyamani, A.; Sayari, A.; Albadri, A.; Albrithen, H.; El Mir, L.

    2016-09-01

    The pulsed laser deposition (PLD) technique is used to grow Al-doped ZnO (AZO) thin films at 500 ° C on silicon substrates under vacuum or oxygen gas background from ablating AZO nanoparticle targets synthesized via the sol-gel process. The structural, morphological and optical properties were characterized by using X-ray diffraction (XRD), scanning electron microscopy (SEM), transmission electron microscopy (TEM), atomic force microscopy (AFM) and spectroscopic ellipsometry (SE) techniques. XRD and TEM images show that AZO powder has a wurtzite-type structure and is composed of small prismatic-like shape nanoparticles with an average size of 30nm. The structural properties of the AZO films grown under oxygen show no significant changes compared to those of the film grown under vacuum. However, the optical properties show a dependence on the growth conditions of the AZO films. Highly c -axis-oriented AZO thin films were obtained with grain size ˜ 15 nm. The stress in the AZO films is tensile as measured from the c -parameter. The dielectric function, the refractive index and the extinction coefficient as a function of the photon energy for the AZO films were determined by using spectroscopic ellipsometry measurements in the photon energy region from 1 to 6eV. The band gap energy was observed to slightly decrease in the presence of the O2 gas background and this may be attributed to the stress. The surface and volume energy loss functions are calculated and exhibit different behaviors in the energy range 1-6eV. Refractive indices of 1.9-2.1 in the visible region were obtained for the AZO films. Also, the electronic carrier concentration appears to be related to the presence of O2 during the growth process.

  14. Comparison of stress states in GaN films grown on different substrates: Langasite, sapphire and silicon

    NASA Astrophysics Data System (ADS)

    Park, Byung-Guon; Saravana Kumar, R.; Moon, Mee-Lim; Kim, Moon-Deock; Kang, Tae-Won; Yang, Woo-Chul; Kim, Song-Gang

    2015-09-01

    We demonstrate the evolution of GaN films on novel langasite (LGS) substrate by plasma-assisted molecular beam epitaxy, and assessed the quality of grown GaN film by comparing the experimental results obtained using LGS, sapphire and silicon (Si) substrates. To study the substrate effect, X-ray diffraction (XRD), scanning electron microscopy (SEM), Raman spectroscopy and photoluminescence (PL) spectra were used to characterize the microstructure and stress states in GaN films. Wet etching of GaN films in KOH solution revealed that the films deposited on GaN/LGS, AlN/sapphire and AlN/Si substrates possess Ga-polarity, while the film deposited on GaN/sapphire possess N-polarity. XRD, Raman and PL analysis demonstrated that a compressive stress exist in the films grown on GaN/LGS, AlN/sapphire, and GaN/sapphire substrates, while a tensile stress appears on AlN/Si substrate. Comparative analysis showed the growth of nearly stress-free GaN films on LGS substrate due to the very small lattice mismatch (~3.2%) and thermal expansion coefficient difference (~7.5%). The results presented here will hopefully provide a new framework for the further development of high performance III-nitride-related devices using GaN/LGS heteroepitaxy.

  15. Tunable optoelectronic properties of pulsed dc sputter-deposited ZnO:Al thin films: Role of growth angle

    NASA Astrophysics Data System (ADS)

    Kumar, Mohit; Singh, Ranveer; Nandy, Suman; Ghosh, Arnab; Rath, Satchidananda; Som, Tapobrata

    2016-07-01

    In this paper, we investigate the role of deposition angle on the physical properties and work function of pulsed dc sputter-deposited Al-doped zinc oxide (AZO) thin films. It is observed that average grain size and crystal quality increase with higher angle of deposition, yielding improved optical properties. A systematic blue shift as well as a decrease in the resistivity takes place with the increasing growth angle up to 70°, while an opposite trend is observed beyond that. In addition, the work function of AZO films is also measured using Kelvin probe force microscopy, which corroborates well with the optical and structural properties. The observed results are explained in the framework of growth angle induced diffusion and shadowing effects. The films deposited at higher angles will be important for rapid incorporation into new technological applications that require a transparent conductive oxide.

  16. A novel p-type and metallic dual-functional Cu-Al2O3 ultra-thin layer as the back electrode enabling high performance of thin film solar cells.

    PubMed

    Lin, Qinxian; Su, Yantao; Zhang, Ming-Jian; Yang, Xiaoyang; Yuan, Sheng; Hu, Jiangtao; Lin, Yuan; Liang, Jun; Pan, Feng

    2016-09-14

    Increasing the open-circuit voltage (Voc) along with the fill factor (FF) is pivotal for the performance improvement of solar cells. In this work, we report the design and construction of a new structure of CdS/CdTe/Al2O3/Cu using the atomic layer deposition (ALD) method, and then we control Cu diffusion through the Al2O3 atomic layer into the CdTe layer. Surprisingly, this generates a novel p-type and metallic dual-functional Cu-Al2O3 atomic layer. Due to this dual-functional character of the Cu-Al2O3 layer, an efficiency improvement of 2% in comparison with the standard cell was observed. This novel dual-functional back contact structure could also be introduced into other thin film solar cells for their efficiency improvement. PMID:27384986

  17. A novel p-type and metallic dual-functional Cu-Al2O3 ultra-thin layer as the back electrode enabling high performance of thin film solar cells.

    PubMed

    Lin, Qinxian; Su, Yantao; Zhang, Ming-Jian; Yang, Xiaoyang; Yuan, Sheng; Hu, Jiangtao; Lin, Yuan; Liang, Jun; Pan, Feng

    2016-09-14

    Increasing the open-circuit voltage (Voc) along with the fill factor (FF) is pivotal for the performance improvement of solar cells. In this work, we report the design and construction of a new structure of CdS/CdTe/Al2O3/Cu using the atomic layer deposition (ALD) method, and then we control Cu diffusion through the Al2O3 atomic layer into the CdTe layer. Surprisingly, this generates a novel p-type and metallic dual-functional Cu-Al2O3 atomic layer. Due to this dual-functional character of the Cu-Al2O3 layer, an efficiency improvement of 2% in comparison with the standard cell was observed. This novel dual-functional back contact structure could also be introduced into other thin film solar cells for their efficiency improvement.

  18. Er-doped amorphous and crystalline Al{sub 2}O{sub 3} and La{sub 2}O{sub 3} films grown with low energy ions from an ECR plasma

    SciTech Connect

    Barbour, J.C.; Potter, B.G.; Follstaedt, D.M.; Knapp, J.A.; Sinclair, M.B.

    1996-12-31

    The effects of low energy ions from a biased electron cyclotron resonance plasma during growth of Al{sub 2}O{sub 3} and La{sub 2}O{sub 3} are used to modify the density and crystalline quality of these oxide films. The type of phase formed for Al{sub 2}O{sub 3} is varied with the ion-assisted growth from amorphous to crystalline {gamma}-Al{sub 2}O{sub 3}. The photoluminescence (PL) properties of different Er-doped Al- and La-oxide phases are examined and through comparison of the PL spectra, the local environment of Er in these oxide materials is discussed.

  19. Effects of modulation periodicity on microstructure, mechanical and tribological properties of NbN/AlN nanostructured multilayer films

    NASA Astrophysics Data System (ADS)

    Wen, Mao; Huang, Hao; Zhang, Kan; Meng, Qingnan; Li, Xin; Zhang, Xiaoming; Kong, Lingwei; Zheng, Weitao

    2013-11-01

    NbN/AlN nano-multilayer films with modulation periodicity (Λ) ranging from 3.9 to 31.6 nm have been deposited on Si (1 0 0) substrate by reactive magnetron sputtering in Ar/N2 mixtures. The Λ dependent structural, mechanical and tribological properties for resulting NbN/AlN multilayers have been explored. As Λ varies from 3.9 to 31.6 nm, the crystal structures of NbN and AlN are face-centered cubic and hexagonal in multilayer films, respectively, favoring formation of a coherent epitaxial growth with crystallographic relationship of 1 1 1NbN1 1 0NbN//0 0 0 2AlN1 1 2bar 0AlN due to total energy minimization, and large Λ can improve mutual coherence and promote coherent growth of fcc-NbN(1 1 1)/w-AlN(0 0 0 2). The remarkable hardness enhancement implements in a wide range of Λ from 3.9 to 31.6 nm for NbN/AlN multilayer system, which can be mainly attributed to hindering the dislocation motion caused by heterostructure coherent interface of fcc-NbN(1 1 1)/w-AlN(0 0 0 2). Although all multilayers show lower friction coefficient than constituent monolayers, great improvements in the wear behaviors only appear in multilayers with Λ = 3.9 and 7.4 nm due to their large content of interfaces.

  20. Temperature dependent magnetic anisotropy of epitaxial Co{sub 2}FeAl films grown on GaAs

    SciTech Connect

    Qiao, Shuang; Nie, Shuaihua; Zhao, Jianhua; Zhang, Xinhui

    2015-03-07

    Co{sub 2}FeAl films with different thickness were prepared at different temperature by molecular beam epitaxy. Their magnetic anisotropy was studied by rotating magneto-optical Kerr rotation measurements under different temperature. It is found that the cubic anisotropy depends only on the temperature-dependent fourth order magneto-elastic coefficients. However, the results of growth and measurement temperature-dependent uniaxial anisotropy suggest that the uniaxial anisotropy of Co{sub 2}FeAl films may be attributed to contributions from both shear strain and anisotropic interfacial bonding. Our experimental findings proposed a new point of view to understand the origin of magnetic anisotropy in ferromagnet/GaAs(001) heterostructures.

  1. Growth temperature dependent structural and magnetic properties of epitaxial Co{sub 2}FeAl Heusler alloy films

    SciTech Connect

    Qiao, Shuang; Nie, Shuaihua; Zhao, Jianhua; Zhang, Xinhui

    2013-06-21

    The structural and magnetic properties of a series of Co{sub 2}FeAl Heusler alloy films grown on GaAs(001) substrate by molecular beam epitaxy have been studied. The epitaxial Co{sub 2}FeAl films with an ordered L{sub 21} structure have been successfully obtained at growth temperature of 433 K, with an in-plane cubic magnetic anisotropy superimposed with an unusual uniaxial magnetic anisotropy. With increasing growth temperature, the ordered L{sub 21} structure degrades. Meanwhile, the uniaxial anisotropy decreases and eventually disappears above 673 K. The interfacial bonding between As and Co or Fe atom is suggested to be responsible for the additional uniaxial anisotropy.

  2. The in-plane anisotropic magnetic damping of ultrathin epitaxial Co{sub 2}FeAl film

    SciTech Connect

    Qiao, Shuang; Yan, Wei; Nie, Shuaihua; Zhao, Jianhua; Zhang, Xinhui

    2015-08-15

    The in-plane orientation-dependent effective damping of ultrathin Co{sub 2}FeAl film epitaxially grown on GaAs(001) substrate by molecular beam epitaxy (MBE) has been investigated by employing the time-resolved magneto-optical Kerr effect (TR-MOKE) measurements. It is found that the interface-induced uniaxial anisotropy is favorable for precession response and the anisotropy of precession frequency is mainly determined by this uniaxial anisotropy, while the magnetic relaxation time and damping factor exhibit the fourfold anisotropy at high-field regime. The field-independent anisotropic damping factor obtained at high fields indicates that the effective damping shows an intrinsic fourfold anisotropy for the epitaxial Co{sub 2}FeAl thin films.

  3. Morphology and properties of a hybrid organic-inorganic system: Al nanoparticles embedded into CuPc thin film

    SciTech Connect

    Molodtsova, O. V.; Babenkov, S. V.; Aristova, I. M.; Vilkov, O. V.; Aristov, V. Yu.

    2014-04-28

    The evolution of the morphology and the electronic structure of the hybrid organic-inorganic system composed of aluminum nanoparticles (NPs) distributed in an organic semiconductor matrix—copper phthalocyanine (CuPc)—as a function of nominal aluminum content was studied by transmission electron microscopy and by photoemission spectroscopy methods. The aluminum atoms deposited onto the CuPc surface diffuse into the organic matrix and self-assemble to NPs in a well-defined manner with a narrow diameter distribution, which depends on the amount of aluminum that is evaporated onto the CuPc film. We find clear evidence of a charge transfer from Al to CuPc and we have been able to determine the lattice sites where Al ions sit. The finally at high coverage about 64 Å the formation of metallic aluminum overlayer on CuPc thin film takes place.

  4. Temperature dependent magnetic anisotropy of epitaxial Co2FeAl films grown on GaAs

    NASA Astrophysics Data System (ADS)

    Qiao, Shuang; Nie, Shuaihua; Zhao, Jianhua; Zhang, Xinhui

    2015-03-01

    Co2FeAl films with different thickness were prepared at different temperature by molecular beam epitaxy. Their magnetic anisotropy was studied by rotating magneto-optical Kerr rotation measurements under different temperature. It is found that the cubic anisotropy depends only on the temperature-dependent fourth order magneto-elastic coefficients. However, the results of growth and measurement temperature-dependent uniaxial anisotropy suggest that the uniaxial anisotropy of Co2FeAl films may be attributed to contributions from both shear strain and anisotropic interfacial bonding. Our experimental findings proposed a new point of view to understand the origin of magnetic anisotropy in ferromagnet/GaAs(001) heterostructures.

  5. Room temperature Ultraviolet B emission from InAlGaN films synthesized by plasma-assisted molecular beam epitaxy

    SciTech Connect

    Kong, W. Jiao, W. Y.; Kim, T. H.; Brown, A. S.; Roberts, A. T.; Fournelle, J.; Losurdo, M.; Everitt, H. O.

    2015-09-28

    Thin films of the wide bandgap quaternary semiconductor In{sub x}Al{sub y}Ga{sub (1−x−y)}N with low In (x = 0.01–0.05) and high Al composition (y = 0.40–0.49) were synthesized on GaN templates by plasma-assisted molecular beam epitaxy. High-resolution X-ray diffraction was used to correlate the strain accommodation of the films to composition. Room temperature ultraviolet B (280 nm–320 nm) photoluminescence intensity increased with increasing In composition, while the Stokes shift remained relatively constant. The data suggest a competition between radiative and non-radiative recombination occurs for carriers, respectively, localized at centers produced by In incorporation and at dislocations produced by strain relaxation.

  6. Visible emission from electroluminescent devices using an amorphous AlN:Er3+ thin-film phosphor

    NASA Astrophysics Data System (ADS)

    Dimitrova, V. I.; Van Patten, P. G.; Richardson, H. H.; Kordesch, M. E.

    2000-07-01

    Electroluminescence (EL) studies of AlN:Er alternating-current thin-film electroluminescent (ACTFEL) devices were performed at 300 K. Thin films of Er-doped AlN, ˜200 nm thick, were grown on indium-tin-oxide/aluminum-titanium-oxide/glass substrates using rf magnetron sputtering in a nitrogen atmosphere. The turn-on voltage was found to be around 70-80 and 100 V for ACTFEL devices without and with a top insulator layer. Sharp emission lines in the visible region were observed which correspond to known transitions of the Er3+ ion. Temperature-dependent cathodoluminescence studies corroborate the EL results, and show that optimum device performance is attained near 300 K.

  7. Magnetocrystalline anisotropy and Gilbert damping of Co2MnAl films epitaxially grown on GaAs

    NASA Astrophysics Data System (ADS)

    Yan, Wei; Wang, Hailong; Du, Wenna; Zhao, Jianhua; Zhang, Xinhui

    2016-02-01

    The thickness dependence of both the magnetocrystalline anisotropy and Gilbert damping are investigated for L 21-ordered Co2MnAl films by time-resolved magneto-optical Kerr (TR-MOKE) measurements. The intrinsic damping parameter of 0.0039 is evaluated by applying both the in-plane and out-of-plane external magnetic field. The magnetocrystalline anisotropy and intrinsic damping parameter are found to show the similar dependence on film’s thickness, revealing their same physical origination related to the spin-orbit coupling. Our experimental findings provide essential information for the dynamic magnetization property of Co2MnAl films for its promising application in spintronic devices.

  8. Comparison of AlCrN and AlCrTiSiN coatings deposited on the surface of plasma nitrocarburized high carbon steels

    NASA Astrophysics Data System (ADS)

    Chen, Wanglin; Zheng, Jie; Lin, Yue; Kwon, Sikchol; Zhang, Shihong

    2015-03-01

    The AlCrN and AlCrTiSiN coatings were produced on the surface of plasma nitrocarburized T10 steels by multi-arc ion plating. The comparison of the microstructures and mechanical properties of the duplex coatings were investigated by means of X-ray diffraction, optical microscope, scanning electron microscope and transmission electron microscope, in association with mechanical property measurement. The results show that the AlCrN coatings with columnar grown are mainly composed of nanocrytalline fcc-(Cr,Al)N phases with {111} preferred orientation, whereas the superlattice and nanocomposite AlCrTiSiN coatings with planar growth mainly consist of nanocrystalline fcc-(Cr,Al)N phases with {100} perfected orientation, hcp-AlN and Si3N4 amorphous phases. The AlCrTiSiN duplex coating with the compound layer reveals higher hardness, adhesion strength, load capacity and lower friction coefficient when compared with the other duplex coatings, which is due to its superlattice and nanocomposite structure. Additionally, these improved properties are related to the appearance of the γ‧-phase which plays the nucleation sites for the coating nitrides and provides a strong supporting effect for the AlCrN and AlCrTiSiN coatings. The main wear mechanism of the duplex coatings without compound layer is spalling and chipping wear as well as tribooxidation wear, whereas the main wear mechanism of the duplex coatings with compound layer is tribooxidation wear.

  9. [Effects of Temperature on the Preparation of Al/Zn3N2 Thin Films Using Magnetron Reactive Sputtering].

    PubMed

    Feng, Jun-qin; Chen, Jun-fang

    2015-08-01

    The effects of substrate temperature on the plasma active species were investigated by plasma optical emission spectroscopy. With increasing substrate temperature, the characteristic spectroscopy intensity of the first positive series of N2* (B(3)Πg-->A(3)Σu(+)), the second positive N2* (C(3)Πu-->B(3)Πg), the first negative series N2(+)* (B(2)Σu(+)-->X(2)Σg(+)) and Zn* are increased. Due to the substrate temperature, each ion kinetic energy is increased and the collision ionization intensified in the chamber. That leading to plasma ion density increase. These phenomenons's show that the substrate temperature raises in a certain range was conducive to zinc nitride thin films growth. Zn3N2 thin films were prepared on Al films using ion sources-assisted magnetron sputtering deposition method. The degree of crystalline of the films was examined with X-ray diffraction (XRD). The results show that has a dominant peak located at 34.359° in room temperature, which was corresponding to the (321) plane of cubic anti-bixbyite zinc nitride structure (JCPDS Card No35-0762). When the substrate temperature was 100 °C, in addition to the (321) reflection, more diffraction peaks appeared corresponding to the (222), (400) and (600) planes, which were located at 31.756°, 36.620° and 56.612° respectively. When the substrate temperature was 200 °C, in addition to the (321), (222), (400) and (600) reflection, more new diffraction peaks also appeared corresponding to the (411), (332), (431) and (622) planes, which were located at 39.070, 43.179°, 47.004° and 62.561° respectively. These results show the film crystalline increased gradually with raise the substrate temperature. XP-1 profilometer were used to analyze the thickness of the Zn3N2 films. The Zn3N2 films deposited on Al films in mixture gas plasma had a deposition rate of 2.0, 2.2, and 2.7 nm · min(-1). These results indicate that the deposition rate was gradually enhanced as substrate temperature increased

  10. [Effects of Temperature on the Preparation of Al/Zn3N2 Thin Films Using Magnetron Reactive Sputtering].

    PubMed

    Feng, Jun-qin; Chen, Jun-fang

    2015-08-01

    The effects of substrate temperature on the plasma active species were investigated by plasma optical emission spectroscopy. With increasing substrate temperature, the characteristic spectroscopy intensity of the first positive series of N2* (B(3)Πg-->A(3)Σu(+)), the second positive N2* (C(3)Πu-->B(3)Πg), the first negative series N2(+)* (B(2)Σu(+)-->X(2)Σg(+)) and Zn* are increased. Due to the substrate temperature, each ion kinetic energy is increased and the collision ionization intensified in the chamber. That leading to plasma ion density increase. These phenomenons's show that the substrate temperature raises in a certain range was conducive to zinc nitride thin films growth. Zn3N2 thin films were prepared on Al films using ion sources-assisted magnetron sputtering deposition method. The degree of crystalline of the films was examined with X-ray diffraction (XRD). The results show that has a dominant peak located at 34.359° in room temperature, which was corresponding to the (321) plane of cubic anti-bixbyite zinc nitride structure (JCPDS Card No35-0762). When the substrate temperature was 100 °C, in addition to the (321) reflection, more diffraction peaks appeared corresponding to the (222), (400) and (600) planes, which were located at 31.756°, 36.620° and 56.612° respectively. When the substrate temperature was 200 °C, in addition to the (321), (222), (400) and (600) reflection, more new diffraction peaks also appeared corresponding to the (411), (332), (431) and (622) planes, which were located at 39.070, 43.179°, 47.004° and 62.561° respectively. These results show the film crystalline increased gradually with raise the substrate temperature. XP-1 profilometer were used to analyze the thickness of the Zn3N2 films. The Zn3N2 films deposited on Al films in mixture gas plasma had a deposition rate of 2.0, 2.2, and 2.7 nm · min(-1). These results indicate that the deposition rate was gradually enhanced as substrate temperature increased

  11. Synthesis, characterization and release of a-naphthaleneacetate from thin films containing Mg/Al-layered double hydroxide

    NASA Astrophysics Data System (ADS)

    Liu, Yanfang; Song, Jian; Jiao, Feipeng; Huang, Jian

    2014-05-01

    An active agent a-naphthaleneacetate (NAA), a plant growth regulator was intercalated into the layered double hydroxides Mg/Al-LDH by ion-exchange method. And we prepared the films by the method of layer-by-layer self-assembly with Cationic Polyacrylamide, Polyacrylic acid sodium and LDH. The obtained compounds were characterized by X-ray diffractometer (XRD), Fourier transform infrared (FT-IR) and Scanning Electron Microscopy (SEM) techniques. The XRD datas demonstrated the guest size and the orientation of anions between the layers was determined. After intercalation, it was proposed that the NAA anions were accommodated in the interlayer region as a bilayer of species with the carboxyl attaching to the upper and lower layers. The FT-IR of the powder from film shows that Mg/Al-NAA-LDH was absorbed on the quartz glass. The film was putted into various solutions, and the release of NAA from the film showed obvious release effect. The release mechanism may be based on the dissolution and ion-exchange process according to first-order kinetics.

  12. Low resistivity aluminum nitride: Carbon (AlN:C) films grown by metal organic chemical vapor deposition

    SciTech Connect

    Wongchotiqul, K.; Chen, N.; Zhang, D.P.; Tang, X.; Spencer, M.G.

    1996-11-01

    Low resistivity single crystal aluminum nitride-carbon (AlN:C) films were grown by metal organic chemical vapor deposition (MOCVD). The growth system used ammonia (NH{sub 3}), trimethylaluminum (TMA), hydrogen (H{sub 2}), and propane (C{sub 3}H{sub 8}) precursors. Films produced with high partial pressure of propane during growth exhibited high conductivity. Van der Paw measurements indicated that the resistivity of the as grown films changed dramatically from 10{sup 8} ohm-cm for unintentionally doped samples to less than .2 ohm-cm for partial pressures of propane greater than 0.5 {times} 10{sup {minus}3} torr. Reflection electron diffraction (RHEED) measurements performed in situ just after film growth indicated that the material is single crystal up to a propane partial pressure of 2.5 {times} 10{sup {minus}3} torr. P-n junctions of n-type 6H-SiC and p-type AlN:C were fabricated, blue emission (centered at 490 nm) was observed from the heterojunction under forward bias.

  13. Kinetics aspects of initial stage thin γ-Al2O3 film formation on single crystalline β-NiAl (110)

    NASA Astrophysics Data System (ADS)

    Zhang, Zhongfan; Jung, Keeyoung; Li, Long; Yang, Judith C.

    2012-02-01

    The growth kinetics and mechanisms of thermally-grown thin γ-Al2O3 film at 650 °C in air on single-crystalline β-NiAl (110) was characterized via transmission electron microscopy, X-ray diffractometry, and thermo-gravimetric analyses. The oxidation kinetics as a function of thickness was gradually changing from an inverse-logarithmic to parabolic behavior across the "intermediate thickness regime" as the oxide thickness increases. To define the boundaries of the three thickness regimes, the high field approximation (x1) and Debye-Hückel length (LD) were determined using the existing theoretical kinetics models combined with experimentally measured data. All the relevant constants for each rate law at the three thickness regimes were also experimentally determined to quantitatively describe the initial stage growth kinetics.

  14. In situ Crystallization of RF sputtered ITO thin films: A comparison with annealed samples

    SciTech Connect

    John, K. Aijo; Manju, T.

    2014-01-28

    Tin doped Indium Oxide (ITO) is a wide band gap semiconductor with high conductivity and transparency in the visible region of the solar spectrum. One of the most popular and exploited applications of ITO is the realization of the transparent conductive layers needed for the electrodes of light sensitive devices, such as photovoltaic cells. The thermal energy for the crystallization of ITO films is very low (150°C). The crystallization can be achieved by the continuous energetic bombardment of the ions in the sputtering chamber without annealing or substrate heating. The accumulated energy will ensure the thermal energy necessary for the crystallization. With the help of sufficiently high sputtering power and sufficient duration, crystallized ITO films can be produced without annealing. In this report, a comparison of the conductivity and transparency of ITO films under two crystallization conditions ((1) crystallization of the sputtered films by annealing; (2) in situ crystallization of the films by providing high sputtering power and long sputtering duration) will be presented.

  15. The influence of varying sputter deposition conditions on the wet chemical etch rate of AlN thin films

    NASA Astrophysics Data System (ADS)

    Ababneh, A.; Kreher, H.; Seidel, H.; Schmid, U.

    2007-05-01

    Aluminium nitride (AlN) reactively sputter deposited from an aluminium target is an interesting compound material due to its CMOS compatible fabrication process and its piezoelectric properties. For the implementation in micromachined sensors and actuators an appropriate patterning technique is needed to form AlN-based elements. Therefore, the influence of different sputtering conditions on the vertical etch rate of AlN thin films with a typical thickness of 600 nm in phosphoric acid (H 3PO 4) is investigated. Under comparable conditions, such as temperature and concentration of the etchant, thin films with a high c-axis orientation are etched substantially slower compared to films with a low degree of orientation. When a high c-axis orientation is present detailed analyses of the etched topologies reveal surface characteristics with a low porosity and hence, low roughness values. From temperature dependant etching experiments an activation energy of 800 (+/- 30) meV is determined showing a reaction-controlled etching regime independent of sputter deposition conditions.

  16. Comparison on the interaction of Al3+/nano-Al13 with calf thymus DNA /salmon sperm DNA

    NASA Astrophysics Data System (ADS)

    Ma, Fei; Ma, Yue; Du, Changwen; Yang, Xiaodi; Shen, Renfang

    2015-11-01

    The conformation change, binding mode and binding site between Al3+/nano-Al13 and calf thymus DNA/salmon sperm DNA were investigated by UV-vis absorption, FTIR spectra, Raman spectroscopy and CD spectra, as well as melting curves measurement. The UV-vis spectra and circular dichroism spectra results suggested that the phosphate group structure was changed when Al3+ interacted with DNA, while the double-helix was distorted when nano-Al13 interacted with DNA. The FTIR and Raman spectroscopy revealed that the binding sites were Al3+ … PO2, Al3+ … N7/guanine PO2 … Al13 … N7-C8/guanine with calf thymus DNA, and Al3+ … N3-O2/cytosine, Al3+ … N7-C8/guanine, PO2 … Al13 … N7-C8/guanine, PO2 … Al13 … N1/adenine with salmon sperm DNA, respectively. The electrostatic binding was existed between Al3+ and DNA, and the electrostatic binding and complexing were found between nano-Al13 and DNA.

  17. Influence of temperature on Al/p-CuInAlSe2 thin-film Schottky diodes

    NASA Astrophysics Data System (ADS)

    Parihar, Usha; Ray, Jaymin; Panchal, C. J.; Padha, Naresh

    2016-06-01

    Al/p-CuInAlSe2 Schottky diodes were fabricated using the optimized thin layers of CuInAlSe2 semiconductor. These diodes were used to study their temperature-dependent current-voltage (I-V) and capacitance-voltage (C-V) analysis over a wide range of 233-353 K. Based on these measurements, diode parameters such as ideality factor ( η), barrier height (ϕbo) and series resistance ( R s) were determined from the downward curvature of I-V characteristics using Cheung and Cheung method. The extracted parameters were found to be strongly temperature dependent; ϕbo increases, while η and R s decrease with increasing temperature. This behavior of ϕbo and η with change in temperature has been explained on the basis of barrier inhomogeneities over the MS interface by assuming a Gaussian distribution (GD) of the ϕbo at the interface. GD of barrier height (BH) was confirmed from apparent BH (ϕap) versus q/2 kT plot, and the values of the mean BH and standard deviation (σs) obtained from this plot at zero bias were found to be 1.02 and 0.14 eV, respectively. Also, a modified ln ( {J_{{s}} /T2 } ) - q2 σ_{{s}}2 /2k2 T2 versus q/ kT plot for Al/p-CuInAlSe2 Schottky diodes according to the GD gives ϕbo and Richardson constant ( A ** ) as 1.01 eV and 26 Acm-2 K-2, respectively. The Richardson constant value of 26 Acm-2 K-2 is very close to the theoretical value of 30 Acm-2 K-2. The discrepancy between BHs obtained from I-V and C-V measurements has also been interpreted.

  18. Fabrication of nanostructured Al-doped ZnO thin film for methane sensing applications

    NASA Astrophysics Data System (ADS)

    Shafura, A. K.; Sin, N. D. Md.; Azhar, N. E. I.; Saurdi, I.; Uzer, M.; Mamat, M. H.; Shuhaimi, A.; Alrokayan, Salman A. H.; Khan, Haseeb A.; Rusop, M.

    2016-07-01

    CH4 gas sensor was fabricated using spin-coating method of the nanostructured ZnO thin film. Effect of annealing temperature on the electrical and structural properties of the film was investigated. Dense nanostructured ZnO film are obtained at higher annealing temperature. The optimal condition of annealing temperature is 500°C which has conductivity and sensitivity value of 3.3 × 10-3 S/cm and 11.5%, respectively.

  19. Merits and Demerits of Transparent Conducting Magnetron Sputtered ZnO:Al, ITO and SnO2:F Thin Films for Solar Cell Applications

    NASA Astrophysics Data System (ADS)

    Das, Rajesh; Das, Himadri Sekhar

    2016-06-01

    Transparent conducting ZnO:Al and indium tin oxide (ITO) thin films were deposited by magnetron sputtering under reactive environment. Both the transparent conducting oxide (TCO) films were exposed intentionally in hydrogen environment at 350 °C calcinations temperature to study the post treated TCO film's opto-electronic, structural as well as surface morphological properties. Electrical resistivity of both ZnO:Al, ITO and SnO2:F films are comparable (order of 10-4 Ω-cm), lowest sheet resistance are 8.5, 3.7 and 4.6 Ω/sq respectively and slightly improved after hydrogen exposure at 350 °C. Optical transmittance and internal texture of hydrogen environment exposed ZnO films remains invariant, but in case of ITO, SnO2:F films optical transmittance deteriorated drastically. Hexagonal wurtzite structure with (002) c-axis orientation is observed for pre- and post-hydrogen exposed ZnO films whereas internal texture as well as crystallographic orientation of ITO and SnO2:F films have significantly changed. Surface grains of ITO films have been significantly enhanced, but no such variations are observed in ZnO surface morphology. ZnO:Al and ITO films show unique plasmonic properties in near infrared transmittance due to free carrier generation in conduction band. Based on surface features/morphology, haze factor and internal texture light scattering mechanism is modeled.

  20. Capping layer-tailored interface magnetic anisotropy in ultrathin Co{sub 2}FeAl films

    SciTech Connect

    Belmeguenai, M. Zighem, F.; Chérif, S. M.; Gabor, M. S. Petrisor, T.; Tiusan, C.

    2015-01-14

    Co{sub 2}FeAl (CFA) thin films of various thicknesses (2 nm ≤ d ≤ 50 nm) have been grown on (001) MgO single crystal substrates and then capped with Cr, V, and Ta. Their magnetic and structural properties have been studied by x-ray diffraction (XRD), vibrating sample magnetometry, and broadband microstrip ferromagnetic resonance (MS-FMR). The XRD revealed that the films are epitaxial with the cubic [001] CFA axis normal to the substrate plane and that the chemical order varies from the B2 phase to the A2 phase when decreasing the thickness. The deduced lattice parameters showed that the Cr-capped films exhibit a larger tetragonal distortion, as compared with the films capped with V or Ta. The presence of magnetic dead layers has been observed in CFA samples capped with V and Ta but not in the case of the Cr-capped ones. The effective magnetization, deduced from the fit of MS-FMR measurements, increases (decreases) linearly with the CFA inverse thickness (1/d) for the Cr-capped (Ta-capped) films while it is constant for the V-capped ones. This allows quantifying the perpendicular surface anisotropy coefficients of −0.46 erg/cm{sup 2} and 0.74 erg/cm{sup 2} for Cr and Ta-capped films, respectively. Moreover, the fourfold and the uniaxial anisotropy fields, measured in these films, showed different trends with a respect to the CFA inverse thickness. This allows inferring that a non-negligible part of the fourfold magnetocrystalline term is of interfacial origin.

  1. Photoelectron spectroscopy study of AlN films grown on n-type 6H-SiC by MOCVD

    NASA Astrophysics Data System (ADS)

    Liang, F.; Chen, P.; Zhao, D. G.; Jiang, D. S.; Zhao, Z. J.; Liu, Z. S.; Zhu, J. J.; Yang, J.; Liu, W.; He, X. G.; Li, X. J.; Li, X.; Liu, S. T.; Yang, H.; Liu, J. P.; Zhang, L. Q.; Zhang, Y. T.; Du, G. T.

    2016-09-01

    Photoelectron spectroscopy has been employed to analyze the content and chemical states of the elements on the surface of AlN films with different thickness, which are synthesized by metalorganic chemical vapor deposition on the n-type SiC substrates under low pressure. It is found that, besides the carbon and gallium on the AlN surface, the atom percentage of surface oxygen increases from 4.9 to 8.4, and the electron affinity also increases from 0.36 to 0.97 eV, when the thickness of AlN films increase from 50 to 400 nm. Furthermore, accompanying with the high-resolution XPS spectra of the O 1s, it is speculated that surface oxygen may be the major influence on the electron affinity, where the surface oxygen changes the surface chemical states through replacing N to form Al-O bond and Ga-O bond, although there are also a few of Ga and C contaminations in the chemical sate of Ga-O and C-C, respectively.

  2. IBA analysis and corrosion resistance of TiAlPtN/TiAlN/TiAl multilayer films deposited over a CoCrMo using magnetron sputtering

    NASA Astrophysics Data System (ADS)

    Canto, C. E.; Andrade, E.; de Lucio, O.; Cruz, J.; Solís, C.; Rocha, M. F.; Alemón, B.; Flores, M.; Huegel, J. C.

    2016-03-01

    The corrosion resistance and the elemental profile of multilayer coatings of TiAlPtN/TiAlN/TiAl synthesized by Physical Vapor Deposition (PVD) reactive magnetron sputtering over a CoCrMo alloy substrate in 10 periods of 30 min each were analyzed and compared to those of the substrate alone and to that of a TiAlPtN single layer coating of the same thickness. The objective of the present work was to create multilayers with different amounts of Pt to enhance the corrosion resistance of a biomedical alloy of CoCrMo. Corrosion tests were performed using Simulated Body Fluid (SBF) using potentiodynamic polarization tests at typical body temperature. The elemental composition and thickness of the coatings were evaluated with the combination of two ion beam analysis (IBA) techniques: a Rutherford Backscattering Spectroscopy (RBS) with alpha beam and a Nuclear Reaction Analysis with a deuteron beam.

  3. Research and analysis on the thin films sputtered by the Ba-Al-S:Eu target fabricated by powder sintering

    NASA Astrophysics Data System (ADS)

    Zhang, Dongpu; Xu, Fang; Yu, Zhinong; Xue, Wei

    2014-11-01

    Europium-doped barium thioaluminate (BaAl2S4:Eu) is currently the most efficient blue phosphor for inorganic thin film electroluminescent (iEL) device. To produce the full-color EL device, several kinds of blue-emitting layer were attempted and tested. As a key point of blue-emitting layer fabrication, single target sputtering deposition is an effective method. In this work, new structural target is introduced and the fabricated process is expatiated. The PL spectra of as fabricated targets show that both of two, 3mol% and 5mol% europium-doped, have blue emitting property. According to the PL spectra excited by 290nm, 300nm and 320nm ultraviolet, emission peaks located in the region near 470nm. So the as-fabricated targets can be used in single target sputtering deposition on thin film of BaAl2S4:Eu. XRD pattern indicates that there are 4 different phases, barium tetraaluminum sulfide (BaAl4S7), barium sulfide (BaS), europium sulfide (EuS) and barium aluminum oxide (BaAl2O4), in target 1. Besides these four compounds, other two phases, aluminum sulfide (Al2S3) and barium thioaluminate (BaAl2S4), are detected in target 2. Considering the analysis results, especially the hydrolyzation of Al2S3, target 1 is more suitable for sputtering deposition of BaAl2S4:Eu thin film. XPS and X-ray Fluorescence patterns describe the precise molar ratio of each element. In target 1 the relative atom concentration of barium, aluminum, sulfur and oxygen can be calculated from the pattern and molar ratio is about 9:33:41:17. Molar ratio of barium and europium is about 1:0.03. In short, the barium thioaluminate doped by europium sputtering target 1 is better to be applied in the fabrication of blue-emitting layer in inorganic electro-luminescent devices.

  4. Hydrophobicity enhancement of Al2O3 thin films deposited on polymeric substrates by atomic layer deposition with perfluoropropane plasma treatment

    NASA Astrophysics Data System (ADS)

    Ali, Kamran; Choi, Kyung-Hyun; Kim, Chang Young; Doh, Yang Hoi; Jo, Jeongdai

    2014-06-01

    The optoelectronics devices such as organic light emitting diodes are greatly vulnerable to moisture, which reduces their functionality and life cycle. The Al2O3 thin films are mostly used as barrier coatings in such electronic devices to protect them from water vapors. The performance of the Al2O3 barrier films can be improved by enhancing their hydrophobicity. Greater the hydrophobicity of the barrier films, greater will be their protection against water vapors. This paper reports on the enhancement of hydrophobicity of Al2O3 thin films through perfluoropropane (C3F8) plasma treatment. Firstly, good quality Al2O3 films have been fabricated through atomic layer deposition (ALD) on polyethylene naphthalate (PEN) substrates at different temperatures. The fabricated films are then plasma treated with C3F8 to enhance their hydrophobicity. Hydrophobic Al2O3 thin films have shown good morphological and optical properties. Low average arithmetic roughness (Ra) of 1.90 nm, 0.93 nm and 0.88 nm have been recorded for the C3F8 plasma treated films deposited at room temperature (RT), 50 °C and 150 °C, respectively. Optical transmittance of more than 90% has been achieved for the C3F8 plasma treated films grown at 50 °C and 150 °C. The contact angle has been increased from 48° ± 3 to 158° ± 3 for the films deposited at RT and increased from 41° ± 3 to 148° ± 3 for the films deposited at 150 °C.

  5. Effect of sputtering pressure on crystalline quality and residual stress of AlN films deposited at 823 K on nitrided sapphire substrates by pulsed DC reactive sputtering

    NASA Astrophysics Data System (ADS)

    Ohtsuka, Makoto; Takeuchi, Hiroto; Fukuyama, Hiroyuki

    2016-05-01

    Aluminum nitride (AlN) is a promising material for use in applications such as deep-ultraviolet light-emitting diodes (UV-LEDs) and surface acoustic wave (SAW) devices. In the present study, the effect of sputtering pressure on the surface morphology, crystalline quality, and residual stress of AlN films deposited at 823 K on nitrided a-plane sapphire substrates, which have high-crystalline-quality c-plane AlN thin layers, by pulsed DC reactive sputtering was investigated. The c-axis-oriented AlN films were homoepitaxially grown on nitrided sapphire substrates at sputtering pressures of 0.4–1.5 Pa. Surface damage of the AlN sputtered films increased with increasing sputtering pressure because of arcing (abnormal electrical discharge) during sputtering. The sputtering pressure affected the crystalline quality and residual stress of AlN sputtered films because of a change in the number and energy of Ar+ ions and Al sputtered atoms. The crystalline quality of AlN films was improved by deposition with lower sputtering pressure.

  6. An ultrathin, smooth, and low-loss Al-doped Ag film and its application as a transparent electrode in organic photovoltaics.

    PubMed

    Zhang, Cheng; Zhao, Dewei; Gu, Deen; Kim, Hyunsoo; Ling, Tao; Wu, Yi-Kuei Ryan; Guo, L Jay

    2014-08-27

    An ultrathin, smooth, and low-loss Ag film without a wetting layer is achieved by co-depositing a small amount of Al into Ag. The film can be as thin as 6 nm, with a roughness below 1 nm and excellent mechanical flexibility. Organic photovoltaics that use these thin films as transparent electrode show superior efficiency to their indium tin oxide (ITO) counterparts because of improved photon management. PMID:24943876

  7. The effect of dopant concentration on properties of transparent conducting Al-doped ZnO thin films for efficient Cu2ZnSnS4 thin-film solar cells prepared by electrodeposition method

    NASA Astrophysics Data System (ADS)

    Mkawi, E. M.; Ibrahim, K.; Ali, M. K. M.; Farrukh, M. A.; Mohamed, A. S.

    2015-11-01

    Al-doped ZnO (AZO) thin films were potentiostatically deposited on indium tin oxide substrates. The influence of the doping level of the ZnO:Al films was investigated. The results of the X-ray diffraction and scanning electron microscopy analysis revealed that the structural properties of the AZO films were found polycrystalline with a hexagonal wurtzite-type structure along the (002) plane. The grain size of the AZO films was observed as approximately 3 μm in the film doping with 4 mol% ZnO:Al concentration. The thin films also exhibited an optical transmittance as high as 90 % in the wavelength range of 100-1,000 nm. The optical band gap increased from 3.33 to 3.45 eV. Based on the Hall studies, the lowest resistivity (4.78 × 10-3 Ω cm) was observed in the film doping with 3 mol% ZnO:Al concentration. The sheet resistant, carrier concentration and Hall mobility values were found as 10.78 Ω/ square, 9.03 × 1018 cm-3 and 22.01 cm2/v s, respectively, which showed improvements in the properties of AZO thin films. The ZnO:Al thin films were used as a buffer layer in thin-film solar cells with the structure of soda-lime glass/Mo/Cu2ZnSnS4/ZnS/ZnO/Al grid. The best solar cell efficiency was 2.3 % with V OC of 0.430 V, J SC of 8.24 mA cm-2 and FF of 68.1 %.

  8. SU-E-T-123: Dosimetric Comparison Between Portrait and Landscape Orientations in Radiochromic Film Dosimetry

    SciTech Connect

    Kakinohana, Y; Toita, T; Kasuya, G; Ariga, T; Heianna, J; Murayama, S

    2014-06-01

    Purpose: To compare the dosimetric properties of radiochromic films with different orientation. Methods: A sheet of EBT3 film was cut into eight pieces with the following sizes: 15×15 cm2 (one piece), 5x15 cm{sup 2} (two) and 4×5 cm{sup 2} (five). A set of two EBT3 sheets was used at each dose level. Two sets were used changing the delivered doses (1 and 2 Gy). The 5×15 cm{sup 2} pieces were rotated by 90 degrees in relation to each other, such that one had landscape orientation and the other had portrait orientation. All 5×15 cm2 pieces were irradiated with their long side aligned with the x-axis of the radiation field. The 15×15 cm{sup 2} pieces were irradiated rotated at 90 degrees to each other. Five pieces, (a total of ten from two sheets) were used to obtain a calibration curve. The irradiated films were scanned using an Epson ES-2200 scanner and were analyzed using ImageJ software. In this study, no correction was applied for the nonuniform scanner signal that is evident in the direction of the scanner lamp. Each film piece was scanned both in portrait and landscape orientations. Dosimetric comparisons of the beam profiles were made in terms of the film orientations (portrait and landscape) and scanner bed directions (perpendicular and parallel to the scanner movement). Results: In general, portrait orientation exhibited higher noise than landscape and was adversely affected to a great extent by the nonuniformity in the direction of the scanner lamp. A significant difference in the measured field widths between the perpendicular and parallel directions was found for both orientations. Conclusion: Without correction for the nonuniform scanner signal in the direction of the scanner lamp, a landscape orientation is preferable. A more detailed investigation is planned to evaluate quantitatively the effect of orientation on the dosimetric properties of a film.

  9. An experimental comparison between a novel and a conventional cooling system for the blown film process

    NASA Astrophysics Data System (ADS)

    Janas, M.; Andretzky, M.; Neubert, B.; Kracht, F.; Wortberg, J.

    2016-03-01

    The blown film extrusion is a significant manufacturing process of plastic films. Compared to other extrusion processes, the productivity is limited by the cooling of the extrudate. A conventional cooling system for the blown film application provides the cooling air tangentially, homogeneous over the whole circumference of the bubble, using a single or dual lip cooling ring. In prior works, major effects could be identified that are responsible for a bad heat transfer. Besides the formation of a boundary sublayer on the film surface due to the fast flowing cooling air, there is the interaction between the cooling jet and the ambient air. In order to intensify the cooling of a tubular film, a new cooling approach was developed, called Multi-Jet. This system guides the air vertically on the film surface, using several slit nozzles over the whole tube formation zone. Hence, the jets penetrate the sublayer. To avoid the interaction with the ambient air, the bubble expansion zone is surrounded by a housing. By means of a numeric investigation, the novel cooling approach and the efficiency of the cooling system could be proved. Thereby, a four times higher local heat transfer coefficient is achieved compared to a conventional cooling device. In this paper, the Multi-Jet cooling system is experimentally tested for several different process conditions. To identify a worth considering cooling configuration of the novel cooling system for the experiment, a simulation tool presets the optimal process parameters. The comparison between the results of the new and a conventional system shows that the novel cooling method is able to gain the same frost line height using a 40% lower cooling air volume flow. Due to the housing of the tube formation zone, a heat recovery can be achieved.

  10. Electronic structure of Pc2Lu and (PcAlF)n oriented thin films using angle resolved photoelectron spectroscopy

    NASA Astrophysics Data System (ADS)

    Fahy, M. R.; Fujimoto, H.; Dann, A. J.; Hoshi, H.; Inokuchi, H.; Maruyama, Y.; Willis, M. R.

    1990-04-01

    Ultraviolet photoelectron spectra have been measured for the radical phthalocyanine dimer, Pc2Lu, and the fluorine bridge stacked phthalocyanine polymer (PcAlF)n. Previous workers have shown that both materials can, under appropriate conditions, be prepared in a well characterised, highly oriented thin film form. Thus, samples for this work were prepared by in situ sublimation at very slow evaporation rates onto crystalline substrates to try to maximise the degree of sample orientation. The angle dependence of the spectra were measured and the sample structure subsequently examined using high resolution TEM. The TEM results show that the (PcAlF)n films have a much higher level of orientation than the Pc2Lu films and this is reflected by the angle dependences of the UPS measurements. The spectra for (PcAlF)n are very similar to measurements on most other simple phthalocyanine compounds and have a small angular dependence. The spectra for Pc2Lu show almost no angular dependence. Again the spectra are broadly similar to that of other Pc's with two significant differences, the lowest energy peak is split and the whole spectra is shifted to lower energy. This result will be discussed in terms of simple molecular orbital ideas. The effect of air on the spectra of both materials was examined and the spectra of (PcAlF)n was found to be particularly sensitive. Attempts to determine the position of the lutetium orbitals by varying the light frequency around the lutetium resonance energies was attempted but no significant variation in the spectra was observed.

  11. Very low-pressure VLP-CVD growth of high quality γ-Al 2O 3 films on silicon by multi-step process

    NASA Astrophysics Data System (ADS)

    Tan, Liwen; Zan, Yude; Wang, Jun; Wang, Qiyuan; Yu, Yuanhuan; Wang, Shurui; Liu, Zhongli; Lin, Lanying

    2002-03-01

    γ-Al 2O 3 films were grown on Si (1 0 0) substrates using the sources of TMA (Al(CH 3) 3) and O 2 by very low-pressure chemical vapor deposition. The effects of temperature control on the crystalline quality, surface morphology, uniformity and dielectricity were investigated. It has been found that the γ-Al 2O 3 film prepared at a temperature of 1000°C has a good crystalline quality, but the surface morphology, uniformity and dielectricity were poor due to the etching reaction between O 2 and Si substrate in the initial growth stage. However, under a temperature-varied multi-step process the properties of γ-Al 2O 3 film were improved. The films have a mirror-like surface and the dielectricity was superior to that grown under a single-step process. The uniformity of γ-Al 2O 3 films for 2-in epi-wafer was <5%, it is better than that disclosed elsewhere. In order to improve the crystalline quality, the γ-Al 2O 3 films were annealed for 1 h in O 2 atmosphere.

  12. Physical mechanism of the Schwarzschild effect in film dosimetry—theoretical model and comparison with experiments

    NASA Astrophysics Data System (ADS)

    Djouguela, A.; Kollhoff, R.; Rühmann, A.; Willborn, K. C.; Harder, D.; Poppe, B.

    2006-09-01

    In consideration of the importance of film dosimetry for the dosimetric verification of IMRT treatment plans, the Schwarzschild effect or failure of the reciprocity law, i.e. the reduction of the net optical density under 'protraction' or 'fractionation' conditions at constant dose, has been experimentally studied for Kodak XOMAT-V (Martens et al 2002 Phys. Med. Biol. 47 2221-34) and EDR 2 dosimetry films (Djouguela et al 2005 Phys. Med. Biol. 50 N317-N321). It is known that this effect results from the competition between two solid-state physics reactions involved in the latent-image formation of the AgBr crystals, the aggregation of two Ag atoms freshly formed from Ag+ ions near radiation-induced occupied electron traps and the spontaneous decomposition of the Ag atoms. In this paper, we are developing a mathematical model of this mechanism which shows that the interplay of the mean lifetime τ of the Ag atoms with the time pattern of the irradiation determines the magnitude of the observed effects of the temporal dose distribution on the net optical density. By comparing this theory with our previous protraction experiments and recent fractionation experiments in which the duration of the pause between fractions was varied, a value of the time constant τ of roughly 10 s at room temperature has been determined for EDR 2. The numerical magnitude of the Schwarzschild effect in dosimetry films under the conditions generally met in radiotherapy amounts to only a few per cent of the net optical density (net OD), so that it can frequently be neglected from the viewpoint of clinical applications. But knowledge of the solid-state physical mechanism and a description in terms of a mathematical model involving a typical time constant of about 10 s are now available to estimate the magnitude of the effect should the necessity arise, i.e. in cases of large fluctuations of the temporal pattern of film exposure.

  13. Influence of Postdeposition Cooling Atmosphere on Thermoelectric Properties of 2% Al-Doped ZnO Thin Films Grown by Pulsed Laser Deposition

    NASA Astrophysics Data System (ADS)

    Saini, S.; Mele, P.; Honda, H.; Matsumoto, K.; Miyazaki, K.; Luna, L. Molina; Hopkins, P. E.

    2015-06-01

    We have investigated the thermoelectric properties of 2% Al-doped ZnO (AZO) thin films depending on the postdeposition cooling atmosphere [in oxygen pressure (AZO-O) or vacuum (AZO-V)]. Thin films were grown by pulsed laser deposition on sapphire () substrates at various deposition temperatures ( to ). All films were c-axis oriented. The electrical conductivity of AZO-V thin films was higher than that of AZO-O thin films across the whole temperature range from 300 K to 600 K, due to the optimal carrier concentration () of AZO-V samples. Furthermore, the thermoelectric performance of AZO-V films increased with the deposition temperature; for instance, the highest power factor of and dimensionless figure of merit of 0.07 at 600 K were found for AZO-V thin film deposited at.

  14. Growth and patterning of laser ablated superconducting YBa2Cu3O7 films on LaAlO3 substrates

    NASA Technical Reports Server (NTRS)

    Warner, J. D.; Bhasin, K. B.; Varaljay, N. C.; Bohman, D. Y.; Chorey, C. M.

    1989-01-01

    A high quality superconducting film on a substrate with a low dielectric constant is desired for passive microwave circuit applications. In addition, it is essential that the patterning process does not effect the superconducting properties of the thin films to achieve the highest circuit operating temperatures. YBa2Cu3O7 superconducting films were grown on lanthanum aluminate substrates using laser ablation with resulting maximum transition temperature (T sub c) of 90 K. The films were grown on a LaAlO3 which was at 775 C and in 170 mtorr of oxygen and slowly cooled to room temperature in 1 atm of oxygen. These films were then processed using photolithography and a negative photoresist with an etch solution of bromine and ethanol. Results are presented on the effect of the processing on T(sub c) of the film and the microwave properties of the patterned films.

  15. Investigation of the surface passivation mechanism through an Ag-doped Al-rich film using a solution process.

    PubMed

    Khan, Firoz; Baek, Seong-Ho; Kim, Jae Hyun

    2016-01-14

    Electronic recombination loss is an important issue for photovoltaic (PV) devices. While it can be reduced by using a passivating layer, most of the techniques used to prepare passivating layers are either not cost effective or not applicable for device applications. Previously, it was reported that a low cost sol-gel derived Al-rich zinc oxide (ZnO:Al) film serves as an effective passivating layer for p-type silicon but is not effective for n-type silicon. Herein, we studied the elemental composition of the film and the interfacial structure of ZnO:Al:Ag/n-Si using TEM, XPS, FTIR, and SIMS analyses. The XPS analysis revealed that Ag-rich zones randomly formed in the film near the ZnO:Al:Ag//n-Si interface, which induced a positive charge at the interface. The maximal value of the effective minority carrier lifetime (τeff ≈ 1581 μs) is obtained for a wafer using the ZnO:Al:Ag passivating layer with RAg/Zn = 2%. The corresponding limiting surface recombination velocity is ∼16 cm s(-1). The FTIR absorption area of Si-H bonds is used to calculate the hydrogen content in the film. The hydrogen content is increased with increasing Ag content up to RAg/Zn = 2% to a maximal value of 3.89 × 10(22) atoms per cm(3) from 3.03 × 10(22) atoms per cm(3) for RAg/Zn = 0%. The positive charge induced at the interface may cause band bending, which would produce an electric field that repels the minority charge carriers from the interface to the bulk of n-Si. Two basic phenomena, chemical passivation due to Si-H bonding and field effect passivation due to the charge induced at the interface, have been observed for effective passivation of the n-Si surface. An implied Voc of 688.1 mV is obtained at an illumination intensity of 1 sun. PMID:26661502

  16. Atomic-layer-deposited Al2O3 thin films with thin SiO2 layers grown by in situ O3 oxidation

    NASA Astrophysics Data System (ADS)

    Kim, Seong Keun; Hwang, Cheol Seong

    2004-08-01

    The growth, thermal annealing behaviors, and electrical properties of Al2O3 thin films grown by atomic layer deposition (ALD) on bare (100)Si and various oxidized Si wafers, by in situ O3 oxidation at 400°C and ex situ rapid thermal annealing (RTA) under O2 atmosphere at 900°C, were investigated. The ALD process was performed using Al(CH3)3 and high concentration of O3(400gm3). The high oxidation potential of O3 oxidized the Si surface at a very early stage of film growth and eliminated the incubation period even on a bare Si surface. The as-grown Al2O3 films had excess oxygen in the films, which diffused to the film Si interface and increased the interfacial layer by oxidizing the Si substrates during postannealing. The Al2O3 films grown on a bare Si substrate had the highest concentration of excess oxygen which resulted in the largest increase in the interfacial layer thickness during postannealing. As a result, the initial oxidation of the Si wafer did not significantly decrease the capacitance density compared to the films grown on a nonoxidized Si wafer at the as-deposited and postannealed states. Therefore, the Al2O3 layers grown using a high concentration of O3 oxidant on the in situ O3 oxidized Si wafers showed real high-k gate dielectric performance although the dielectric constants of the Al2O3 films were rather small (˜9) compared to other high-k gate dielectric films.

  17. [Changes in mammographic features of breast cancer--comparison with previous films].

    PubMed

    Matsunaga, T; Hagiwara, K; Kimura, K; Kusama, M

    1992-11-25

    Mammographic features of 87 breast cancer patients were studied in comparison with their previous survey films. Changes in the mammographic features included microcalicification (28 cases), tumor shadow (35 cases) and intratumorous microcalicifications (6 cases). Seven cases had several extremely faint calcifications on the previous films, and three of six cases with clustered and scattered microcalcifications that extended over an entire breast quadrant had increased in number, density and extent. Eight cases in which clustered microcalcifications had increased in number, density and extent suggested a relationship between the increase in the extent of microcalcifications and length of time between visits. In most cases with tumor shadow, a slight localized increase in mammary gland density, irregular margins and straightened trabeculae were overlooked because of breast density.

  18. Misfit Strain Relaxation of Ferroelectric PbTiO3/LaAlO3 (111) Thin Film System

    NASA Astrophysics Data System (ADS)

    Xu, Y. B.; Tang, Y. L.; Zhu, Y. L.; Liu, Y.; Li, S.; Zhang, S. R.; Ma, X. L.

    2016-10-01

    Ferroelectric thin films grown on high index substrates show unusual structural and switching dynamics due to their special strain states. Understanding the misfit relaxation behavior is crucial to facilitate the high index thin film growth with improved quality. In this paper, ferroelectric PbTiO3 thin films were grown on LaAlO3 (111) substrates by pulsed laser deposition technique. The microstructures were investigated by combinations of conventional and aberration-corrected transmission electron microscopy. Diffraction contrast analysis and high resolution imaging reveal that high density interfacial dislocations were distributed at the interfaces. These dislocations have mixed character with Burgers vectors of a <110> and line directions of <112>. The edge components of the dislocations, with the Burgers vectors parallel to the interface, accommodate the lattice mismatch and are the main contributor to the misfit relaxation of this system. The formation mechanism of these dislocations is proposed and discussed to elucidate the novel mismatch relaxation behavior of <111> oriented perovskite films.

  19. Co2FeAl thin films grown on MgO substrates: Correlation between static, dynamic, and structural properties

    NASA Astrophysics Data System (ADS)

    Belmeguenai, M.; Tuzcuoglu, H.; Gabor, M. S.; Petrisor, T., Jr.; Tiusan, C.; Berling, D.; Zighem, F.; Chauveau, T.; Chérif, S. M.; Moch, P.

    2013-05-01

    Co2FeAl (CFA) thin films with thickness varying from 10 to 115 nm have been deposited on MgO(001) substrates by magnetron sputtering and then capped by a Ta or Cr layer. X-ray diffraction (XRD) revealed that the cubic [001] CFA axis is normal to the substrate and that all the CFA films exhibit full epitaxial growth. The chemical order varies from the B2 phase to the A2 phase when decreasing the thickness. Magneto-optical Kerr effect (MOKE) and vibrating sample magnetometer (VSM) measurements show that, depending on the field orientation, one- or two-step switchings occur. Moreover, the films present a quadratic MOKE signal increasing with the CFA thickness, due to the increasing chemical order. Ferromagnetic resonance (FMR), MOKE transverse bias initial inverse susceptibility and torque (TBIIST) measurements reveal that the in-plane anisotropy results from the superposition of a uniaxial and of a fourfold symmetry term. The fourfold anisotropy is in accord with the crystal structure of the samples and is correlated to the biaxial strain and to the chemical order present in the films. In addition, a large negative perpendicular uniaxial anisotropy is observed. Frequency and angular dependencies of the ferromagnetic resonance linewidth show two magnon scattering and mosaicity contributions, which depend on the CFA thickness. A Gilbert damping coefficient as low as 0.0011 is found.

  20. Misfit Strain Relaxation of Ferroelectric PbTiO3/LaAlO3 (111) Thin Film System

    PubMed Central

    Xu, Y. B.; Tang, Y. L.; Zhu, Y. L.; Liu, Y.; Li, S.; Zhang, S. R.; Ma, X. L.

    2016-01-01

    Ferroelectric thin films grown on high index substrates show unusual structural and switching dynamics due to their special strain states. Understanding the misfit relaxation behavior is crucial to facilitate the high index thin film growth with improved quality. In this paper, ferroelectric PbTiO3 thin films were grown on LaAlO3 (111) substrates by pulsed laser deposition technique. The microstructures were investigated by combinations of conventional and aberration-corrected transmission electron microscopy. Diffraction contrast analysis and high resolution imaging reveal that high density interfacial dislocations were distributed at the interfaces. These dislocations have mixed character with Burgers vectors of a <110> and line directions of <112>. The edge components of the dislocations, with the Burgers vectors parallel to the interface, accommodate the lattice mismatch and are the main contributor to the misfit relaxation of this system. The formation mechanism of these dislocations is proposed and discussed to elucidate the novel mismatch relaxation behavior of <111> oriented perovskite films. PMID:27725752

  1. Atomic layer deposition for fabrication of HfO2/Al2O3 thin films with high laser-induced damage thresholds.

    PubMed

    Wei, Yaowei; Pan, Feng; Zhang, Qinghua; Ma, Ping

    2015-01-01

    Previous research on the laser damage resistance of thin films deposited by atomic layer deposition (ALD) is rare. In this work, the ALD process for thin film generation was investigated using different process parameters such as various precursor types and pulse duration. The laser-induced damage threshold (LIDT) was measured as a key property for thin films used as laser system components. Reasons for film damaged were also investigated. The LIDTs for thin films deposited by improved process parameters reached a higher level than previously measured. Specifically, the LIDT of the Al2O3 thin film reached 40 J/cm(2). The LIDT of the HfO2/Al2O3 anti-reflector film reached 18 J/cm(2), the highest value reported for ALD single and anti-reflect films. In addition, it was shown that the LIDT could be improved by further altering the process parameters. All results show that ALD is an effective film deposition technique for fabrication of thin film components for high-power laser systems.

  2. Modification of dislocation behavior in GaN overgrown on engineered AlN film-on-bulk Si substrate

    NASA Astrophysics Data System (ADS)

    Tungare, Mihir; Weng, Xiaojun; Leathersich, Jeffrey M.; Suvarna, Puneet; Redwing, Joan M.; (Shadi) Shahedipour-Sandvik, F.

    2013-04-01

    The changes that the AlN buffer and Si substrate undergo at each stage of our substrate engineering process, previously shown to lead to a simultaneous and substantial reduction in film crack density and dislocation density in overgrown GaN, are presented. Evidence of ion-implantation assisted grain reorientation for AlN islands coupled with physical isolation from the bulk Si substrate prove to be the dominating driving forces. This is further emphasized with x-ray diffraction analysis that demonstrates a reduction in the in-plane lattice constant of AlN from 3.148 Å to 3.113 Å and a relative change in rotation of AlN islands by 0.135° with regard to the Si substrate after substrate engineering. Misfit dislocations at the AlN-Si interface and disorder that is normally associated with formation of amorphous SiNx at this interface are considered to be two of the major contributors to dislocation nucleation within overgrown GaN. Following our technique, the disappearance of disorder at the AlN-Si interface is observed. Extensive ellipsometry and transmission electron microscopy suggests that larger AlN islands with a smoother surface morphology could further reduce the dislocation density below that previously reported. A 1.2 μm GaN layer deposited on an AlN buffer with larger islands and smoother morphology exhibits a 14× reduction in surface pit density after undergoing the ion-implantation assisted substrate modification technique.

  3. Engineering the polar magneto-optical Kerr effect in strongly strained L10-MnAl films

    NASA Astrophysics Data System (ADS)

    Zhu, Lijun; Brandt, Liane; Zhao, Jianhua

    2016-10-01

    We report the engineering of the polar magnetooptical (MO) Kerr effect in perpendicularly magnetized L10-MnAl epitaxial films with remarkably tuned magnetization, strain, and structural disorder by varying substrate temperature (T s) during molecular-beam epitaxy growth. The Kerr rotation was enhanced by a factor of up to 5 with T s increasing from 150 to 350 °C as a direct consequence of the improvement of the magnetization. A similar remarkable tuning effect was also observed on the Kerr ellipticity and the magnitude of the complex Kerr angle, while the phase of the complex Kerr angle appears to be independent of the magnetization. The combination of the good semiconductor compatibility, the moderate coercivity of 0.3-8.2 kOe, the tunable polar MO Kerr effect of up to ~0.034°, and giant spin precession frequencies of up to ~180 GHz makes L10-MnAl films a very interesting MO material. Our results give insights into both the microscopic mechanisms of the MO Kerr effect in L10-MnAl alloys and their scientific and technological application potential in the emerging spintronics and ultrafast MO modulators.

  4. Determination of labile inorganic and organic species of Al and Cu in river waters using the diffusive gradients in thin films technique.

    PubMed

    Tonello, Paulo Sergio; Goveia, Danielle; Rosa, André Henrique; Fraceto, Leonardo Fernandes; Menegário, Amauri Antonio

    2011-03-01

    The diffusive gradients in thin films (DGT) technique, using a diffusive gel or a restrictive gel, was evaluated for the determination of labile inorganic and organic species of Al and Cu in model synthetic solutions and river water samples. Experiments were performed both in situ and in the laboratory. In the solutions containing Al ions, the major labile fraction consisted of inorganic species. The organic complex fractions were mainly kinetically inert. For the model Cu solutions, the most labile fraction consisted of inorganic species; however, significant amounts of labile organic complexes of Cu were also present. A comparison was made between the results obtained using restrictive gel DGT and tangential flow ultrafiltration (TF-UF). The Cu fraction determined by restrictive gel DGT (corresponding to the "free" ions plus the labile fraction of small molecular size complexes) was larger than that determined by TF-UF (corresponding to all small molecular size ions), suggesting that the techniques exhibited different porosities for discrimination of inorganic species. For the river water samples analyzed in the laboratory, less than 45% of the analytes were present in labile forms, with most being organic species. For the in situ measurements, the labile inorganic and organic fractions were larger than those obtained in the laboratory analyses. These differences could have been due to errors incurred during sample collection and storage. All results were consistent with those found using two different methods, namely, solid-phase extraction and the DGT technique employing the apparent diffusion coefficient.

  5. Al capping layers for nondestructive x-ray photoelectron spectroscopy analyses of transition-metal nitride thin films

    SciTech Connect

    Greczynski, Grzegorz Hultman, Lars; Petrov, Ivan; Greene, J. E.

    2015-09-15

    X-ray photoelectron spectroscopy (XPS) compositional analyses of materials that have been air exposed typically require ion etching in order to remove contaminated surface layers. However, the etching step can lead to changes in sample surface and near-surface compositions due to preferential elemental sputter ejection and forward recoil implantation; this is a particular problem for metal/gas compounds and alloys such as nitrides and oxides. Here, the authors use TiN as a model system and compare XPS analysis results from three sets of polycrystalline TiN/Si(001) films deposited by reactive magnetron sputtering in a separate vacuum chamber. The films are either (1) air-exposed for ≤10 min prior to insertion into the ultrahigh-vacuum (UHV) XPS system; (2) air-exposed and subject to ion etching, using different ion energies and beam incidence angles, in the XPS chamber prior to analysis; or (3) Al-capped in-situ in the deposition system prior to air-exposure and loading into the XPS instrument. The authors show that thin, 1.5–6.0 nm, Al capping layers provide effective barriers to oxidation and contamination of TiN surfaces, thus allowing nondestructive acquisition of high-resolution core-level spectra representative of clean samples, and, hence, correct bonding assignments. The Ti 2p and N 1s satellite features, which are sensitive to ion bombardment, exhibit high intensities comparable to those obtained from single-crystal TiN/MgO(001) films grown and analyzed in-situ in a UHV XPS system and there is no indication of Al/TiN interfacial reactions. XPS-determined N/Ti concentrations acquired from Al/TiN samples agree very well with Rutherford backscattering and elastic recoil analysis results while ion-etched air-exposed samples exhibit strong N loss due to preferential resputtering. The intensities and shapes of the Ti 2p and N 1s core level signals from Al/TiN/Si(001) samples do not change following long-term (up to 70 days) exposure to ambient conditions

  6. Stoichiometry of LaAlO{sub 3} films grown on SrTiO{sub 3} by pulsed laser deposition

    SciTech Connect

    Golalikhani, M.; Lei, Q. Y.; Xi, X. X.; Chen, G.; Spanier, J. E.; Ghassemi, H.; Johnson, C. L.; Taheri, M. L.

    2013-07-14

    We have studied the stoichiometry of epitaxial LaAlO{sub 3} thin films on SrTiO{sub 3} substrate grown by pulsed laser deposition as a function of laser energy density and oxygen pressure during the film growth. Both x-ray diffraction ({theta}-2{theta} scan and reciprocal space mapping) and transmission electron microscopy (geometric phase analysis) revealed a change of lattice constant in the film with the distance from the substrate. Combined with composition analysis using x-ray fluorescence we found that the nominal unit-cell volume expanded when the LaAlO{sub 3} film was La-rich, but remained near the bulk value when the film was La-poor or stoichiometric. La excess was found in all the films deposited in oxygen pressures lower than 10{sup -2} Torr. We conclude that the discussion of LaAlO{sub 3}/SrTiO{sub 3} interfacial properties should include the effects of cation off-stoichiometry in the LaAlO{sub 3} films when the deposition is conducted under low oxygen pressures.

  7. Strong temperature-dependent crystallization, phase transition, optical and electrical characteristics of p-type CuAlO2 thin films.

    PubMed

    Liu, Suilin; Wu, Zhiheng; Zhang, Yake; Yao, Zhiqiang; Fan, Jiajie; Zhang, Yiqiang; Hu, Junhua; Zhang, Peng; Shao, Guosheng

    2015-01-01

    We report here a reliable and reproducible single-step (without post-annealing) fabrication of phase-pure p-type rhombohedral CuAlO2 (r-CuAlO2) thin films by reactive magnetron sputtering. The dependence of crystallinity and phase compositions of the films on the growth temperature was investigated, revealing that highly-crystallized r-CuAlO2 thin films could be in situ grown in a narrow temperature window of ∼940 °C. Optical and electrical property studies demonstrate that (i) the films are transparent in the visible light region, and the bandgaps of the films increased to ∼3.86 eV with the improvement of crystallinity; (ii) the conductance increased by four orders of magnitude as the film was evolved from the amorphous-like to crystalline structure. The predominant role of crystallinity in determining CuAlO2 film properties was demonstrated to be due to the heavy anisotropic characteristics of the O 2p-Cu 3d hybridized valence orbitals. PMID:25406672

  8. Nuclear magnetic resonance study of thin Co2FeAl0.5Si0.5 Heusler films with varying thickness

    NASA Astrophysics Data System (ADS)

    Alfonsov, A.; Peters, B.; Yang, F. Y.; Büchner, B.; Wurmehl, S.

    2015-02-01

    Type, degree, and evolution of structural order are important aspects for understanding and controlling the properties of highly spin-polarized Heusler compounds, in particular, with respect to the optimal film growth procedure. In this work, we compare the structural order and the local magnetic properties revealed by nuclear magnetic resonance (NMR) spectroscopy with the macroscopic properties of thin Co2FeAl 0.5Si 0.5 Heusler films with varying thickness. A detailed analysis of the measured NMR spectra presented in this paper enables us to find a very high degree of L 21 -type ordering up to 81% concomitantly with excess Fe of 8%-13% at the expense of Al and Si. We show that the formation of certain types of order depends not only on the thermodynamic phase diagrams as in bulk samples, but also that the kinetic control may contribute to the phase formation in thin films. It is an exciting finding that Co2FeAl 0.5Si 0.5 can form an almost ideal L 21 structure in films, though with a considerable amount of Fe-Al/Si off stoichiometry. Moreover, the very good quality of the films as demonstrated by our NMR study suggests that the technique of off-axis sputtering used to grow the films sets the stage for the optimized performance of Co2FeAl 0.5Si 0.5 in spintronic devices.

  9. Formation of ordered films of axially bridged aluminum phthalocyanine [(tBu)4PcAl]2O via magnetic field-induced reaction.

    PubMed

    Basova, Tamara; Berezin, Aleksei; Nadolinny, Vladimir; Peisert, Heiko; Chassé, Thomas; Banimuslem, Hikmat; Hassan, Aseel

    2013-11-28

    The μ-(oxo)bis[tetra-tert-butylphthalocyaninato] aluminum(III) [(tBu)4PcAl]2O films with the crystallites oriented preferably in one direction were obtained via chemical transformation of tetra-tert-butylsubstituted chloroaluminum(III) phthalocyanine (tBu)4PcAlCl film upon its annealing in magnetic field. A comparative analysis of the influence of post-deposition annealing process without and under applied magnetic field of 1 T, on the orientation and morphology of (tBu)4PcAlCl and [(tBu)4PcAl]2O films, has been carried out by the methods of UV-vis, Infrared and Raman spectroscopies, XRD as well as atomic force microscopy. The formation of [(tBu)4PcAl]2O films with elongated crystallites having preferential orientation was observed upon heating of the films in magnetic field while annealing without magnetic field under the same conditions does not demonstrate any effect on the structure and morphology of these films. The reasons of the sensitivity of this reaction to the presence of such magnetic field is discussed and studied by electronic paramagnetic resonance spectroscopy. PMID:24289372

  10. Direct band-gap measurement on epitaxial Co{sub 2}FeAl{sub 0.5}Si{sub 0.5} Heusler-alloy films

    SciTech Connect

    Alhuwaymel, Tariq F.; Carpenter, Robert; Yu, Chris Nga Tung; Kuerbanjiang, Balati; Lazarov, Vlado K.; Abdullah, Ranjdar M.; El-Gomati, Mohamed; Hirohata, Atsufumi

    2015-05-07

    In this study, a newly developed band-gap measurement technique has been used to characterise epitaxial Co{sub 2}FeAl{sub 0.5}Si{sub 0.5} (CFAS) films. The CFAS films were deposited on MgO(001) substrate by ultra high vacuum molecular beam epitaxy. The band-gap for the as deposited films was found to be ∼110 meV when measured at room temperature. This simple technique provides a macroscopic analysis of the half-metallic properties of a thin film. This allows for simple optimisation of growth and annealing conditions.

  11. Comparison of charge and dopant densities for DX sites in AlGaAs:Sn

    NASA Astrophysics Data System (ADS)

    Lurio, L. B.; Hayes, T. M.; Pant, J.; Williamson, D. L.; Gibart, P.; Theis, T. N.

    1996-03-01

    X-ray absorption spectroscopy measurements using fluorescence detection have been performed on Sn dopant centers in Al_.33Ga_.77As:Sn. Absolute calibration of the fluorescence yield permits a comparison of dopant and charge carrier densities in the persistent photo-conducting (PPC) state. It is found that the ratio of dopants to carriers is significantly greater than 1:1. In order to understand this discrepancy, we have determined the average local environment of the dopants through analysis of the X-ray absorption fine structure. The reduced carrier density is explained by a combination of inactive donor sites and charge traps. Implications for the nature of the Sn donor sites will be discussed. This research is supported by NSF grant nos. DMR-9006956 and DMR-8902512. The measurements were made at SSRL which is funded by the DOE Office of Basic Energy Sciences and the NIH Biotechnology Research Resource Program.

  12. Low-temperature atomic layer deposition of Al{sub 2}O{sub 3} on blown polyethylene films with plasma-treated surfaces

    SciTech Connect

    Beom Lee, Gyeong; Sik Son, Kyung; Won Park, Suk; Hyung Shim, Joon; Choi, Byoung-Ho

    2013-01-15

    In this study, a layer of Al{sub 2}O{sub 3} was deposited on blown polyethylene films by atomic layer deposition (ALD) at low temperatures, and the surface characteristics of these Al{sub 2}O{sub 3}-coated blown polyethylene films were analyzed. In order to examine the effects of the plasma treatment of the surfaces of the blown polyethylene films on the properties of the films, both untreated and plasma-treated film samples were prepared under various processing conditions. The surface characteristics of the samples were determined by x-ray photoelectron spectroscopy, as well as by measuring their surface contact angles. It was confirmed that the surfaces of the plasma-treated samples contained a hydroxyl group, which helped the precursor and the polyethylene substrate to bind. ALD of Al{sub 2}O{sub 3} was performed through sequential exposures to trimethylaluminum and H{sub 2}O at 60 Degree-Sign C. The surface morphologies of the Al{sub 2}O{sub 3}-coated blown polyethylene films were observed using atomic force microscopy and scanning electron microscopy/energy-dispersive x-ray spectroscopy. Further, it was confirmed that after ALD, the surface of the plasma-treated film was covered with alumina grains more uniformly than was the case for the surface of the untreated polymer film. It was also confirmed via the focused ion beam technique that the layer Al{sub 2}O{sub 3} conformed to the surface of the blown polyethylene film.

  13. Comparison of effectiveness of convection-, transpiration-, and film-cooling methods with air as coolant

    NASA Technical Reports Server (NTRS)

    Eckert, E R G; Livingood, N B

    1954-01-01

    Various parts of aircraft propulsion engines that are in contact with hot gases often require cooling. Transpiration and film cooling, new methods that supposedly utilize cooling air more effectively than conventional convection cooling, have already been proposed. This report presents material necessary for a comparison of the cooling requirements of these three methods. Correlations that are regarded by the authors as the most reliable today are employed in evaluating each of the cooling processes. Calculations for the special case in which the gas velocity is constant along the cooled wall (flat plate) are presented. The calculations reveal that a comparison of the three cooling processes can be made on quite a general basis. The superiority of transpiration cooling is clearly shown for both laminar and turbulent flow. This superiority is reduced when the effects of radiation are included; for gas-turbine blades, however, there is evidence indicating that radiation may be neglected.

  14. Investigation of the surface passivation mechanism through an Ag-doped Al-rich film using a solution process

    NASA Astrophysics Data System (ADS)

    Khan, Firoz; Baek, Seong-Ho; Kim, Jae Hyun

    2015-12-01

    Electronic recombination loss is an important issue for photovoltaic (PV) devices. While it can be reduced by using a passivating layer, most of the techniques used to prepare passivating layers are either not cost effective or not applicable for device applications. Previously, it was reported that a low cost sol-gel derived Al-rich zinc oxide (ZnO:Al) film serves as an effective passivating layer for p-type silicon but is not effective for n-type silicon. Herein, we studied the elemental composition of the film and the interfacial structure of ZnO:Al:Ag/n-Si using TEM, XPS, FTIR, and SIMS analyses. The XPS analysis revealed that Ag-rich zones randomly formed in the film near the ZnO:Al:Ag//n-Si interface, which induced a positive charge at the interface. The maximal value of the effective minority carrier lifetime (τeff ~ 1581 μs) is obtained for a wafer using the ZnO:Al:Ag passivating layer with RAg/Zn = 2%. The corresponding limiting surface recombination velocity is ~16 cm s-1. The FTIR absorption area of Si-H bonds is used to calculate the hydrogen content in the film. The hydrogen content is increased with increasing Ag content up to RAg/Zn = 2% to a maximal value of 3.89 × 1022 atoms per cm3 from 3.03 × 1022 atoms per cm3 for RAg/Zn = 0%. The positive charge induced at the interface may cause band bending, which would produce an electric field that repels the minority charge carriers from the interface to the bulk of n-Si. Two basic phenomena, chemical passivation due to Si-H bonding and field effect passivation due to the charge induced at the interface, have been observed for effective passivation of the n-Si surface. An implied Voc of 688.1 mV is obtained at an illumination intensity of 1 sun.Electronic recombination loss is an important issue for photovoltaic (PV) devices. While it can be reduced by using a passivating layer, most of the techniques used to prepare passivating layers are either not cost effective or not applicable for device

  15. Round robin comparison of tensile results on GlidCop Al25

    SciTech Connect

    Edwards, D.J.; Zinkle, S.J.; Fabritsiev, S.A.; Pokrovsky, A.S.

    1998-09-01

    A round robin comparison of the tensile properties of GlidCop{trademark} Al25 oxide dispersion strengthened copper was initiated between collaborating laboratories to evaluate the test and analysis procedures used in the irradiation experiments in SRIAR in Dimitrovgrad. The tests were conducted using the same tensile specimen geometry as used in previous irradiation experiments, with tests at each laboratory being conducted in air or vacuum at 25, 150, and 300 C at a strain rate of 3 {times} 10{sup {minus}4} s{sup {minus}1}. The strength of the GlidCop Al25 decreased as the test temperature increased, with no observable effect of testing in air versus vacuum on the yield and ultimate strengths. The uniform elongation decreased by almost a factor of 3 when the test temperature was raised from room temperature to 300 C, but the total elongation remained roughly constant over the range of test temperatures. Any effect of testing in air on the ductility may have been masked by the scatter introduced into the results because each laboratory tested the specimens in a different grip setup. In light of this, the results of the round robin tests demonstrated that the test and analysis procedures produced essentially the same values for tensile yield and ultimate, but significant variability was present in both the uniform and total elongation measurements due to the gripping technique.

  16. Al and Fe co-doped transparent conducting ZnO thin film for mediator-less biosensing application

    NASA Astrophysics Data System (ADS)

    Saha, Shibu; Gupta, Vinay

    2011-12-01

    Highly c-axis oriented Al and Fe co-doped ZnO (ZAF) thin film is prepared by pulsed laser deposition. Fe introduces redox centre along with shallow donor level while Al doping enhances conductivity of ZnO, thus removing the requirement of both mediator and bottom conducting layer in bioelectrode. Model enzyme (glucose oxidase), was immobilized on surface of ZAF matrix. Cyclic voltammetry and photometric assay show that prepared bio-electrode is sensitive to glucose concentration with enhanced response of 0.18 μAmM-1cm-2 and low Km ˜ 2.01 mM. The results illustrate that ZAF is an attractive matrix for realization of miniaturized mediator-less solid state biosensor.

  17. Electronic structure of Al- and Ga-doped ZnO films studied by hard X-ray photoelectron spectroscopy

    SciTech Connect

    Gabás, M.; Ramos Barrado, José R.; Torelli, P.; Barrett, N. T.

    2014-01-01

    Al- and Ga-doped sputtered ZnO films (AZO, GZO) are semiconducting and metallic, respectively, despite the same electronic valence structure of the dopants. Using hard X-ray photoelectron spectroscopy we observe that both dopants induce a band in the electronic structure near the Fermi level, accompanied by a narrowing of the Zn 3d/O 2p gap in the valence band and, in the case of GZO, a substantial shift in the Zn 3d. Ga occupies substitutional sites, whereas Al dopants are in both substitutional and interstitial sites. The latter could induce O and Zn defects, which act as acceptors explaining the semiconducting character of AZO and the lack of variation in the optical gap. By contrast, mainly substitutional doping is consistent with the metallic-like behavior of GZO.

  18. Structural, electrical, optical, thermoelectrical and photoconductivity properties of the SnO2-Al2O3 binary transparent conducting films deposited by the spray pyrolysis method

    NASA Astrophysics Data System (ADS)

    Moharrami, F.; Bagheri-Mohagheghi, M.-M.; Azimi-Juybari, H.; Shokooh-Saremi, M.

    2012-01-01

    In this paper, the SnO2-Al2O3 binary thin-film system has been deposited on a glass substrate by the spray pyrolysis technique. The effect of aluminum concentration on the structural, electrical, thermoelectrical, optical and photoconductivity properties of films was studied. The [Al]/[Sn] atomic ratio was in the range 0-100 at.% in solution. X-ray diffraction analysis shows that all films with different doping levels have polycrystalline SnO2 cassiterite phase. At doping levels of 40 at.% and above, the Al2O3 phase was observed and the sheet resistance of the films increased with increasing Al doping in the ranges from 5 at.% to less than 40 at.% and more than 60 at.% due to the substitution of Al3+ with Sn4+. Minimum sheet resistance of films was found in the range 40-60 at.%. Using Hall effect measurements, the majority carriers concentration obtained was of the order of 1018 cm-3. Hall effect and thermoelectrical measurements show that at doping levels between 10 and 20% and also higher than 60 at.%, majority carriers change from electrons (n-type conduction) to holes (p-type conduction). Also, a higher Seebeck coefficient value equal to -341 μV K-1 was obtained for the 30 at.% Al-doping level. The average transmittance of the films at low doping levels was about 75-90%. The photoconductivity properties of SnO2-Al2O3 thin films increased with increasing doping level.

  19. Room temperature photoluminescence from In{sub x}Al{sub (1−x)}N films deposited by plasma-assisted molecular beam epitaxy

    SciTech Connect

    Kong, W. Jiao, W. Y.; Kim, T. H.; Brown, A. S.; Mohanta, A.; Roberts, A. T.; Fournelle, J.; Losurdo, M.; Everitt, H. O.

    2014-09-29

    InAlN films deposited by plasma-assisted molecular beam epitaxy exhibited a lateral composition modulation characterized by 10–12 nm diameter, honeycomb-shaped, columnar domains with Al-rich cores and In-rich boundaries. To ascertain the effect of this microstructure on its optical properties, room temperature absorption and photoluminescence characteristics of In{sub x}Al{sub (1−x)}N were comparatively investigated for indium compositions ranging from x = 0.092 to 0.235, including x = 0.166 lattice matched to GaN. The Stokes shift of the emission was significantly greater than reported for films grown by metalorganic chemical vapor deposition, possibly due to the phase separation in these nanocolumnar domains. The room temperature photoluminescence also provided evidence of carrier transfer from the InAlN film to the GaN template.

  20. Structural evolution and the control of defects in atomic layer deposited HfO2-Al2O3 stacked films on GaAs.

    PubMed

    Kang, Yu-Seon; Kim, Dae-Kyoung; Jeong, Kwang-Sik; Cho, Mann-Ho; Kim, Chung Yi; Chung, Kwun-Bum; Kim, Hyoungsub; Kim, Dong-Chan

    2013-03-01

    The structural characteristics and interfacial reactions of bilayered dielectric stacks of 3 nm HfO2/2 nm Al2O3 and 3 nm Al2O3/2 nm HfO2 on GaAs, prepared by atomic layer deposition (ALD), were examined during film growth and the postannealing process. During the postdeposition annealing (PDA) of the Al2O3/HfO2/GaAs structures at 700 °C, large amounts of Ga oxides were generated between the Al2O3 and HfO2 films as the result of interfacial reactions between interdiffused oxygen impurities and out-diffused atomic Ga. However, in the case of the HfO2/Al2O3/GaAs structures, the presence of an Al2O3 buffer layer effectively blocked the out-diffusion of atomic Ga, thus suppressing the formation of Ga oxide. Microstructural analyses showed that HfO2 films that were deposited on Al2O3/GaAs had completely crystallized during the PDA process, even at 700 °C, because of the Al2O3 diffusion barrier. Capacitance-voltage measurements showed a relatively large frequency dispersion of the Al2O3/HfO2/GaAs structure in accumulation capacitance compared to the HfO2/Al2O3/GaAs structure due to a higher interface state density. Conductance results revealed that the Al2O3 buffer layer on GaAs resulted in a significant reduction in gap states in GaAs. The induced gap state in the Al2O3/HfO2/GaAs structure originated from the out-diffusion of atomic Ga into the HfO2 film. Density functional theory calculations supported this conclusion.

  1. Optically stimulated luminescence (OSL) of carbon-doped aluminum oxide (Al{sub 2}O{sub 3}:C) for film dosimetry in radiotherapy

    SciTech Connect

    Schembri, V.; Heijmen, B. J. M.

    2007-06-15

    Introduction and Purpose: Conventional x-ray films and radiochromic films have inherent challenges for high precision radiotherapy dosimetry. Here we have investigated basic characteristics of optically stimulated luminescence (OSL) of irradiated films containing carbon-doped aluminum oxide (Al{sub 2}O{sub 3}:C) for dosimetry in therapeutic photon and electron beams. Materials and Methods: The OSL films consist of a polystyrene sheet, with a top layer of a mixture of single crystals of Al{sub 2}O{sub 3}:C, ground into a powder, and a polyester base. The total thickness of the films is 0.3 mm. Measurements have been performed in a water equivalent phantom, using 4, 6, 10, and 18 MV photon beams, and 6-22 MeV electron beams. The studies include assessment of the film response (acquired OSL signal/delivered dose) on delivered dose (linearity), dose rate (1-6 Gy/min), beam quality, field size and depth (6 MV, ranges 4x4-30x30 cm{sup 2}, d{sub max}-35 cm). Doses have been derived from ionization chamber measurements. OSL films have also been compared with conventional x-ray and GafChromic films for dosimetry outside the high dose area, with a high proportion of low dose scattered photons. In total, 787 OSL films have been irradiated. Results: Overall, the OSL response for electron beams was 3.6% lower than for photon beams. Differences between the various electron beam energies were not significant. The 6 and 18 MV photon beams differed in response by 4%. No response dependencies on dose rate were observed. For the 6 MV beam, the field size and depth dependencies of the OSL response were within {+-}2.5%. The observed inter-film response variation for films irradiated with the same dose varied from 1% to 3.2% (1 SD), depending on the measurement day. At a depth of 20 cm, 5 cm outside the 20x20 cm{sup 2} 6 and 18 MV beams, an over response of 17% was observed. In contrast to GafChromic and conventional x-ray films, the response of the Al{sub 2}O{sub 3}:C films is linear

  2. High pseudocapacitive cobalt carbonate hydroxide films derived from CoAl layered double hydroxides

    NASA Astrophysics Data System (ADS)

    Lu, Zhiyi; Zhu, Wei; Lei, Xiaodong; Williams, Gareth R.; O'Hare, Dermot; Chang, Zheng; Sun, Xiaoming; Duan, Xue

    2012-05-01

    A thin nanosheet of mesoporous cobalt carbonate hydroxide (MPCCH) has been fabricated from a CoAl-LDH nanosheet following removal of the Al cations by alkali etching. The basic etched electrode exhibits enhanced specific capacitance (1075 F g-1 at 5 mA cm-2) and higher rate capability and cycling stability (92% maintained after 2000 cycles).A thin nanosheet of mesoporous cobalt carbonate hydroxide (MPCCH) has been fabricated from a CoAl-LDH nanosheet following removal of the Al cations by alkali etching. The basic etched electrode exhibits enhanced specific capacitance (1075 F g-1 at 5 mA cm-2) and higher rate capability and cycling stability (92% maintained after 2000 cycles). Electronic supplementary information (ESI) available: Detailed experimental procedure, specific capacitance calculation, EDS and FTIR results, electrochemical results of CoAl-LDH and SEM image. See DOI: 10.1039/c2nr30617d

  3. Preparation of Sr2AlTaO6 Insulating Films on YBa2Cu3O7-δ by Metalorganic Chemical Vapor Deposition with Purified Sr Source

    NASA Astrophysics Data System (ADS)

    Takahashi, Yoshihiro; Zama, Hideaki; Ishimaru, Yoshihiro; Inoue, Nobuyoshi; Wu, Yuan; Morishita, Tadataka; Tanabe, Keiichi

    2002-02-01

    200-nm-thick Sr2AlTaO6 (SAT) insulating films were prepared on 10-μm-thick superconducting YBa2Cu3O7-δ (YBCO) films by metalorganic chemical vapor deposition (MOCVD). By employing a purified Sr(thd)2 metalorganic source, instead of Sr(thd)2-2tetraene, and a higher evaporation temperature, we could reproducibly obtain stoichiometric SAT films with high crystallinity as revealed by the full-width at half maximum value of the SAT (004) X-ray rocking curve which was as small as 0.2°. Moreover, a 200-nm-thick c-axis-oriented YBCO film with a Tc of 90 K and a Jc higher than 107 A/cm2 below 60 K could be grown on the SAT film. These results confirm that the SAT films prepared by MOCVD are suitable for use as insulating layers in high-Tc multilayer electronic devices.

  4. Comparison of CF4 and SF6 based plasmas for ECR etching of isotopically enriched 10Boron films

    SciTech Connect

    Voss, L F; Reinhardt, C E; Graff, R T; Conway, A M; Nikolic, R J; Deo, N; Cheung, C L

    2009-02-23

    Isotopically enriched {sup 10}boron films have been successfully etched in an ECR etching tool using CF{sub 4} and SF{sub 6} based plasmas. Comparisons between the two are made with regards to etch rate, selectivity to the underlying Si device structure, and morphology of the {sup 10}boron post-etching. The present film etching development is expected to be critical for the fabrication of next generation thermal neutron solid state detectors based on {sup 10}boron.

  5. Electrical conduction and dielectric relaxation properties of AlN thin films grown by hollow-cathode plasma-assisted atomic layer deposition

    NASA Astrophysics Data System (ADS)

    Altuntas, Halit; Bayrak, Turkan; Kizir, Seda; Haider, Ali; Biyikli, Necmi

    2016-07-01

    In this study, aluminum nitride (AlN) thin films were deposited at 200 °C, on p-type silicon substrates utilizing a capacitively coupled hollow-cathode plasma source integrated atomic layer deposition (ALD) reactor. The structural properties of AlN were characterized by grazing incidence x-ray diffraction, by which we confirmed the hexagonal wurtzite single-phase crystalline structure. The films exhibited an optical band edge around ˜5.7 eV. The refractive index and extinction coefficient of the AlN films were measured via a spectroscopic ellipsometer. In addition, to investigate the electrical conduction mechanisms and dielectric properties, Al/AlN/p-Si metal-insulator-semiconductor capacitor structures were fabricated, and current density-voltage and frequency dependent (7 kHz-5 MHz) dielectric constant measurements (within the strong accumulation region) were performed. A peak of dielectric loss was observed at a frequency of 3 MHz and the Cole-Davidson empirical formula was used to determine the relaxation time. It was concluded that the native point defects such as nitrogen vacancies and DX centers formed with the involvement of Si atoms into the AlN layers might have influenced the electrical conduction and dielectric relaxation properties of the plasma-assisted ALD grown AlN films.

  6. Electrical conduction and dielectric relaxation properties of AlN thin films grown by hollow-cathode plasma-assisted atomic layer deposition

    NASA Astrophysics Data System (ADS)

    Altuntas, Halit; Bayrak, Turkan; Kizir, Seda; Haider, Ali; Biyikli, Necmi

    2016-07-01

    In this study, aluminum nitride (AlN) thin films were deposited at 200 °C, on p-type silicon substrates utilizing a capacitively coupled hollow-cathode plasma source integrated atomic layer deposition (ALD) reactor. The structural properties of AlN were characterized by grazing incidence x-ray diffraction, by which we confirmed the hexagonal wurtzite single-phase crystalline structure. The films exhibited an optical band edge around ∼5.7 eV. The refractive index and extinction coefficient of the AlN films were measured via a spectroscopic ellipsometer. In addition, to investigate the electrical conduction mechanisms and dielectric properties, Al/AlN/p-Si metal-insulator-semiconductor capacitor structures were fabricated, and current density–voltage and frequency dependent (7 kHz–5 MHz) dielectric constant measurements (within the strong accumulation region) were performed. A peak of dielectric loss was observed at a frequency of 3 MHz and the Cole–Davidson empirical formula was used to determine the relaxation time. It was concluded that the native point defects such as nitrogen vacancies and DX centers formed with the involvement of Si atoms into the AlN layers might have influenced the electrical conduction and dielectric relaxation properties of the plasma-assisted ALD grown AlN films.

  7. Influence of plasma density on the chemical composition and structural properties of pulsed laser deposited TiAlN thin films

    SciTech Connect

    Quiñones-Galván, J. G.; Camps, Enrique; Muhl, S.; Flores, M.; Campos-González, E.

    2014-05-15

    Incorporation of substitutional Al into the TiN lattice of the ternary alloy TiAlN results in a material with improved properties compared to TiN. In this work, TiAlN thin films were grown by the simultaneous ablation of Ti and Al targets in a nitrogen containing reactive atmosphere. The deposit was formed on silicon substrates at low deposition temperature (200 °C). The dependence of the Al content of the films was studied as a function of the ion density of the plasma produced by the laser ablation of the Al target. The plasma parameters were measured by means of a planar Langmuir probe and optical emission spectroscopy. The chemical composition of the films was measured by energy dispersive X-ray spectroscopy. The results showed a strong dependence of the amount of aluminum incorporated in the films with the plasma density. The structural characterization of the deposits was carried out by Raman spectroscopy, X-ray diffraction, and transmission electron microscopy, where the substitutional incorporation of the Al into the TiN was demonstrated.

  8. Enhanced carrier mobility of multilayer MoS2 thin-film transistors by Al2O3 encapsulation

    NASA Astrophysics Data System (ADS)

    Kim, Seong Yeoul; Park, Seonyoung; Choi, Woong

    2016-10-01

    We report the effect of Al2O3 encapsulation on the carrier mobility and contact resistance of multilayer MoS2 thin-film transistors by statistically investigating 70 devices with SiO2 bottom-gate dielectric. After Al2O3 encapsulation by atomic layer deposition, calculation based on Y-function method indicates that the enhancement of carrier mobility from 24.3 cm2 V-1 s-1 to 41.2 cm2 V-1 s-1 occurs independently from the reduction of contact resistance from 276 kΩ.μm to 118 kΩ.μm. Furthermore, contrary to the previous literature, we observe a negligible effect of thermal annealing on contact resistance and carrier mobility during the atomic layer deposition of Al2O3. These results demonstrate that Al2O3 encapsulation is a useful method of improving the carrier mobility of multilayer MoS2 transistors, providing important implications on the application of MoS2 and other two-dimensional materials into high-performance transistors.

  9. In situ measurements of labile Al and Mn in acid mine drainage using diffusive gradients in thin films.

    PubMed

    Søndergaard, Jens

    2007-08-15

    The technique of diffusive gradients in thin films (DGT) can be used for in situ measurements of labile metal species in water, but the application for this method on acid mine drainage (AMD) is complicated due to reduced sampler adsorption of metals at low pH. This study evaluates the use of DGT on labile Al and Mn in AMD (pH 3.1-4.2). DGT measurements were performed both in standard solutions in the laboratory and in situ in the field. Laboratory results show that DGT can be used in water with pH as low as 3.0 for Al and 4.0 for Mn without correcting for reduced adsorption. Below pH 4.0, the adsorption of Mn showed a linearly decrease with pH to approximately 55% at pH 3.0. Taking this correction into account revealed that 84-100% of the total dissolved Al and Mn measured in the field was DGT-labile. Measurements using DGT agreed well with predictions using the speciation program WHAM VI. This study shows that the use of DGT can be extended below the previously reported pH working range for Al, and for Mn using a simple linear correction with respect to pH, and demonstrates that the technique can be applied for monitoring time-integrated labile metal concentrations at AMD sites. PMID:17620010

  10. Epitaxial Growth of YBa2Cu3O7 Films onto LaAlO3 (100) by Using Oxalates

    NASA Astrophysics Data System (ADS)

    Dominguez, A. Bustamante; Felix, L. León; Garcia, J.; Santibañez, J. Flores; Valladares, L. De Los Santos; Gonzalez, J. C.; Anaya, A. Osorio; Pillaca, M.

    Due to the current necessity to obtain epitaxial superconductor films at low cost, we report the growth of YBa2Cu3O7 (Y123) films by chemical deposition. The procedure involved simple steps such as precipitation of stoichiometric amounts of yttrium, barium and copper acetates in oxalic acid (H2C2O4). The precursor solution was dripped onto LaAlO3 (100) substrates with the help of a Fisher pipette. The films were annealed in oxygen atmosphere during 12 h at three different temperatures: 820 °C, 840 °C and 860 °C. After 820 °C and 860 °C annealing, X-ray diffraction (XRD) analysis revealed high intensity of the (00l) reflections denoting that most of the Y123 grains were c-axis oriented. In addition, we also observed a-axis oriented grains ((h00) reflexion), minor randomly oriented grains and other phases (such as Y2BaCuO5 and CuO). In contrast, the sample treated at 840 °C, we noticed c - and a-axis oriented grains, very small amounts of randomly oriented grains without formation of other phases. From the magnetization versus temperature measurements, the critical temperatures were estimated at 70K and 90K for the samples annealed at 820 °C and 860 °C respectively.

  11. Analytical characterization of poly(pyrrole-3-carboxylic acid) films electrosynthesised on Pt, Ti and Ti/Al/V substrates.

    PubMed

    De Giglio, Elvira; Losito, Ilario; Dagostino, Francesco; Sabbatini, Luigia; Zambonin, Pier Giorgio; Torrisi, Alberto; Licciardello, Antonino

    2004-03-01

    With the aim of developing a polymeric multilayer film for application in advanced biomaterials, as a first step poly(pyrrole-3-carboxylic acid) films (abbreviated as PPy-3-carbox) were electropolymerised from pyrrole-3-carboxylic acid solutions by cyclic voltammetry and chronoamperometry on platinum, titanium and Ti90Al6V4 substrates and characterised both electrochemically (cyclic voltammetry) and spectroscopically (X-Ray Photoelectron Spectroscopy, XPS). Electrochemical experiments showed that the potential range adopted for electropolymerization affects the polymer electroactivity, by analogy with unsubstituted polypyrrole. The combination of conventional and chemical derivation-XPS provided information on PPy-3-carbox surface structure, showing no significant difference between films grown on different substrates and an increase of the COOH groups amount (one group over three pyrrole rings, as an average) with respect to unsubstituted polypyrrole (PPy), as expected. Finally, a preliminary Time-of-Flight Secondary Ion Mass Spectrometry (ToF-SIMS) investigation was performed in order to get further information on the polymer structure and electroactivity.

  12. RETRACTED: Investigation of structural, optical and electronic properties in Al-Sn co-doped ZnO thin films

    NASA Astrophysics Data System (ADS)

    Pan, Zhanchang; Tian, Xinlong; Wu, Shoukun; Yu, Xia; Li, Zhuliang; Deng, Jianfeng; Xiao, Chumin; Hu, Guanghui; Wei, Zhigang

    2013-01-01

    This article has been retracted: please see Elsevier Policy on Article Withdrawal (http://www.elsevier.com/locate/withdrawalpolicy). This article has been retracted at the request of the Editor-in-Chief. Figures 3 and 4 of this paper have also been presented as belonging to other materials in other publications. This observation is evidence of fraud and therefore it is not certain that the described research and conclusions of this paper belong to the presented images. Figures 3 and 4 of this paper can also be found in: Effect of annealing on the structures and properties of Al and F co-doped ZnO nanostructures, Materials Science in Semiconductor Processing, 2014, 17, 162-167, http://dx.doi.org/10.1016/j.mssp.2013.09.023 Highly transparent and conductive Sn/F and Al co-doped ZnO thin films prepared by sol-gel method, Journal of Alloys and Compounds, 2014,583, 32-38, http://dx.doi.org/10.1016/j.jallcom.2013.06.192 Properties of fluorine and tin co-doped ZnO thin films deposited by sol-gel method, Journal of Alloys and Compounds, 2013,576, 31-37, http://dx.doi.org/10.1016/j.jallcom.2013.04.132

  13. Synthesis and characterization of 10 nm thick piezoelectric AlN films with high c-axis orientation for miniaturized nanoelectromechanical devices

    SciTech Connect

    Zaghloul, Usama; Piazza, Gianluca

    2014-06-23

    The scaling of piezoelectric nanoelectromechanical systems (NEMS) is challenged by the synthesis of ultrathin and high quality piezoelectric films on very thin electrodes. We report the synthesis and characterization of the thinnest piezoelectric aluminum nitride (AlN) films (10 nm) ever deposited on ultrathin platinum layers (2–5 nm) using reactive sputtering. X-ray diffraction, high-resolution transmission electron microscopy, and fast Fourier transform analyses confirmed the proper crystal orientation, fine columnar texture, and the continuous lattice structure within individual grains in the deposited AlN nanometer thick films. The average extracted d{sub 31} piezoelectric coefficient for the synthesized films is −1.73 pC/N, which is comparable to the reported values for micron thick and highly c-axis oriented AlN films. The 10 nm AlN films were employed to demonstrate two different types of optimized piezoelectric nanoactuators. The unimorph actuators exhibit vertical displacements as large as 1.1 μm at 0.7 V for 25 μm long and 30 nm thick beams. These results have a great potential to realize miniaturized NEMS relays with extremely low voltage, high frequency resonators, and ultrasensitive sensors.

  14. Formation, characterization, and application of sputtered Al/sub 2/O/sub 3/ and gamma-Fe/sub 2/O/sub 3/ thin films

    SciTech Connect

    Chen, G.L.

    1985-01-01

    One reason to study Al/sub 2/O/sub 3/ film formation is that it may be used as an insulating layer of a thin film inductive transducer for magnetic recording. Another reason is that Al/sub 2/O/sub 3/ could serve as an effective replacement of SiO/sub 2/ as a gate insulation in MOSFET's (metal-oxide-semiconductor field-effect transistor devices). RF diode sputtering is used as the method of forming Al/sub 2/O/sub 3/ and ..gamma..-Fe/sub 2/O/sub 3/ thin films. The effects of oxygen partial pressure, substrate bias, substrate spacing, and residual gas, etc. on the formation of oxide thin films were characterized by x-ray diffraction, SEM, STEM, TEM, ellipsometry, alpha-step scan, EDX, AES, XPS, capacitance bridge, and VSM (Vibrating Sample Magnetometer). It was found that Al/sub 2/O/sub 3/ films sputtered at 400 watts RF power, 10 mtorr total gas pressure, and 6.35 cm target-to-substrate spacing will exhibit the optimum physical properties under the condition of -40 VRF substrate bias and 1 x 10/sup -4/ torr oxygen partial pressure. The effects of oxygen partial pressure and substrate bias are found to be the most important factors in determining the properties of sputtered oxide films.

  15. ZnO:Al films prepared by inline DC magnetron sputtering

    NASA Astrophysics Data System (ADS)

    Bingel, Astrid; Füchsel, Kevin; Kaiser, Norbert; Tünnermann, Andreas

    2014-02-01

    Aluminum-doped zinc oxide (AZO) is one of the most promising transparent conductive oxide (TCO) materials that can substitute the high-quality but costly indium tin oxide (ITO). To ensure high-quality films as well as moderate production costs, inline DC magnetron sputtering was chosen to deposit thin AZO films. The influence of sputter gas pressure, substrate temperature, and film thickness on the electrical, optical, and structural properties was analyzed. The resistivity reaches a minimum of 1.3×10-5 Ωm at around 1 Pa for a substrate temperature of 90°C. A maximum conductivity was obtained by increasing the substrate temperature to 160°C. An annealing step after deposition led to a further decrease in resistivity to a value of 5.3×10-6 Ωm in a 200 nm thin film. At the same time, the optical performance could be improved. Additionally, simulations of the transmittance and reflectance spectra were carried out to compare carrier concentration and mobility determined by optical techniques with those from Hall measurements.

  16. Comparison in mechanical and tribological properties of CrTiAlMoN and CrTiAlN nano-multilayer coatings deposited by magnetron sputtering

    NASA Astrophysics Data System (ADS)

    Wang, Tao; Zhang, Guojun; Jiang, Bailing

    2016-02-01

    CrTiAlN and CrTiAlMoN nano-multilayer coatings were deposited by closed field unbalanced magnetron sputtering. TiMoN and CrTiMoN nano-multilayer coatings with same Mo2N layer thickness were also prepared for comparison. The structure of these coatings is investigated by X-ray diffraction (XRD), X-ray photoelectron spectroscopy (XPS) and transmission electron microscopy (TEM). The mechanical and tribological properties were characterized and compared by nano-indentation and ball-on-disc test. It was found that these coatings were structured by fcc metal nitride phases (including CrN, TiN, AlN and Mo2N) and the preferred orientation changed from (1 1 1) to (2 0 0) with the increase of Mo content. The TEM results showed that the coatings exhibited typical columnar structure and nano-multilayer structure with modulation periods ranged from 3.2 nm to 7.6 nm. Among these coatings, CrTiAlMoN coatings presented the highest hardness, lowest coefficient of friction (COF) and wear rate. The hardness of these nano-multilayer coatings were determined by layer interfaces: TiN/Mo2N and AlN/Mo2N layer interface showed benefit on hardness enhancement while CrN/Mo2N layer interface led to a great hardness decrement. In comparison with the other as-deposited coatings, the low COF of CrTiAlMoN coatings was not only affected by Mo addition but also related to its oxidation behaviors.

  17. Increased upper critical field for nanocrystalline MoN thin films deposited on AlN buffered substrates at ambient temperature

    NASA Astrophysics Data System (ADS)

    Baskaran, R.; Thanikai Arasu, A. V.; Amaladass, E. P.; Vaidhyanathan, L. S.; Baisnab, D. K.

    2016-05-01

    Molybdenum nitride (MoN) thin films have been deposited using reactive DC magnetron sputtering on aluminum nitride buffered oxidized silicon substrates at ambient temperature. GIXRD of aluminum nitride (AlN) deposited under similar conditions has revealed the formation of wurtzite phase AlN. GIXRD characterization of molybdenum thin films deposited on AlN buffered oxidized silicon substrates has indicated the formation of nanocrystalline MoN thin films. The electrical resistivity measurements indicate MoN thin films have a superconducting transition temperature of ~8 K. The minimum transition width of the MoN thin film is 0.05 K at 0 T. The inferred upper critical field B c2(0) for these nanocrystalline MoN thin films obtained by fitting the temperature dependence of critical field with Werthamer, Helfand and Hohenberg theory lies in the range of 17-18 T which is the highest reported in literature for MoN thin films.

  18. YBa2Cu3O7-δ - ag Sputtered Thin Films on MgO (100) and LaAlO3 (100) Biased and Unbiased Substrates

    NASA Astrophysics Data System (ADS)

    Moshfegh, A. Z.; Akhavan, O.; Salamati, H.; Kameli, P.; Akhavan, M.

    2000-09-01

    In this investigation, we have deposited YBa2Cu3O7-δ - Ag thin films on various biased and unbiased substrates, including MgO (100), LaAlO3 (100) and Si (111), using a single stoichiometric composite target of YBa2Cu3O7-δ with 10 wt.% Ag content, applying DC sputtering technique. The growth parameters are varied as following: sputtering gas pressure PAr = 100 - 300 mtorr, sputtering power P = 30 - 80 W, substrate bias voltage Vb= 0 - 220 V and film thickness t = 500 - 5000 Å. An optimum bias voltage of Vb= - 100 V was obtained under our experimental conditions. The post annealed (930°C for 1 hr in O2 environment) films exhibit superconducting state with Tc (onset) of about 40 K for biased (on - axis), and 86 K for unbiased (off- axis) post annealed (800 ° C, 3 hr) films grown over both MgO(100) and LaAlO3 (100) substrates. According to our SEM analysis, Ag particles are uniformly distributed in the annealed films with average grain size of about 0.3 μm located mostly at the grain boundaries. PIXE compositional analysis of the deposited films indicates deficiency of Cu and Ba for unannealed and Cu rich concentration for the annealed YBCO - Ag films grown over unbiased LaAlO3 (100) substrate.

  19. Large-scale fabrication of nanopatterned sapphire substrates by annealing of patterned Al thin films by soft UV-nanoimprint lithography

    NASA Astrophysics Data System (ADS)

    Cui, Lin; Han, Jie-Cai; Wang, Gui-Gen; Zhang, Hua-Yu; Sun, Rui; Li, Ling-Hua

    2013-11-01

    Large-scale nanopatterned sapphire substrates were fabricated by annealing of patterned Al thin films. Patterned Al thin films were obtained by soft UV-nanoimprint lithography and reactive ion etching. The soft mold with 550-nm-wide lines separated by 250-nm space was composed of the toluene-diluted polydimethylsiloxane (PDMS) layer supported by the soft PDMS. Patterned Al thin films were subsequently subjected to dual-stage annealing due to the melting temperature of Al thin films (660°C). The first comprised a low-temperature oxidation anneal at 450°C for 24 h. This was followed by a high-temperature annealing in the range of 1,000°C and 1,200°C for 1 h to induce growth of the underlying sapphire single crystal to consume the oxide layer. The SEM results indicate that the patterns were retained on sapphire substrates after high-temperature annealing at less than 1,200°C. Finally, large-scale nanopatterned sapphire substrates were successfully fabricated by annealing of patterned Al thin films for 24 h at 450°C and 1 h at 1,000°C by soft UV-nanoimprint lithography.

  20. Large-scale fabrication of nanopatterned sapphire substrates by annealing of patterned Al thin films by soft UV-nanoimprint lithography

    PubMed Central

    2013-01-01

    Large-scale nanopatterned sapphire substrates were fabricated by annealing of patterned Al thin films. Patterned Al thin films were obtained by soft UV-nanoimprint lithography and reactive ion etching. The soft mold with 550-nm-wide lines separated by 250-nm space was composed of the toluene-diluted polydimethylsiloxane (PDMS) layer supported by the soft PDMS. Patterned Al thin films were subsequently subjected to dual-stage annealing due to the melting temperature of Al thin films (660°C). The first comprised a low-temperature oxidation anneal at 450°C for 24 h. This was followed by a high-temperature annealing in the range of 1,000°C and 1,200°C for 1 h to induce growth of the underlying sapphire single crystal to consume the oxide layer. The SEM results indicate that the patterns were retained on sapphire substrates after high-temperature annealing at less than 1,200°C. Finally, large-scale nanopatterned sapphire substrates were successfully fabricated by annealing of patterned Al thin films for 24 h at 450°C and 1 h at 1,000°C by soft UV-nanoimprint lithography. PMID:24215718

  1. Microtron Irradiation Induced Tuning of Band Gap and Photoresponse of Al-ZnO Thin Films Synthesized by mSILAR

    NASA Astrophysics Data System (ADS)

    Thomas, Deepu; Augustine, Simon; Sadasivuni, Kishor Kumar; Ponnamma, Deepalekshmi; Alhaddad, Ahmad Yaser; Cabibihan, John-John; Vijayalakshmi, K. A.

    2016-10-01

    Al-doped polycrystalline nano ZnO (Al-ZnO) thin films with different doping concentrations were successfully prepared by the microwave-assisted successive ionic layer adsorption and reaction (mSILAR) technique. The structural analysis along with the orientation of the prepared films was examined by powder x-ray diffraction (PXRD) patterns. The deposited film is polycrystalline and the (002) orientation enhanced upon doping. Additional investigations were carried out to study the effect of electron beam irradiation (e--irradiation) on the band gap and photoconductivity of both irradiated and unirradiated samples. Both the Al doping and e--irradiation led to the enhancement of the photoconductivity of prepared materials. This property enables us to tune the properties of materials for various applications by controlling dopant concentrations and e--irradiation. The dependence of photocurrent on e--irradiation of Al-ZnO thin films was not reported previously. Therefore, Al-doped polycrystalline nano-ZnO thin film is a promising material for band gap engineering and for the development of solar cells.

  2. Effect of sputtering target's grain size on the sputtering yield, particle size and coercivity (Hc) of Ni and Ni20Al thin films

    NASA Astrophysics Data System (ADS)

    Reza, M.; Sajuri, Z.; Yunas, J.; Syarif, J.

    2016-02-01

    Researches on magnetic thin films concentrated mainly on optimizing the sputtering parameters to obtain the desired thin film's properties. However, the effect of the sputtering target's properties towards the thin film's properties is not well established. This study is focused on analysing the effect of sputtering target's grain size towards the sputtering yield, particle size and the magnetic coercivity (Hc) of thin film. Two sets of sputtering targets; pure Ni (magnetic) and Ni20Al (at.%) (non-magnetic) were prepared. Each target has 2 sets of samples with different grain sizes; (a) 30 to 50μm and (b) 80 to 100μm. Thin films from each target were sputtered onto glass substrates under fixed sputtering parameters. The initial results suggested that the sputtering target's grain size has significant effect on the thin film's sputtering yield, particle size and Hc. Sputtering target with smaller grain size has 12% (pure Ni) to 60% (Ni20Al) higher sputtering yield, which produces thin films with smaller particle size and larger Hc value. These initial findings provides a basis for further magnetic thin film research, particularly for the seed layer in hard disk drive (HDD) media, where seed layer with smaller particle size is essential in reducing signal-to-noise ratio (SNR).

  3. Optical properties analysis of Ta-doped TiO2 thin films on LaAlO3 substrates

    NASA Astrophysics Data System (ADS)

    Nurfani, Eka; Sutjahja, Inge M.; Winata, Toto; Rusydi, Andrivo; Darma, Yudi

    2015-09-01

    We study optical properties of Ta-doped TiO2 thin film on LaAlO3 substrate using spectroscopy ellipsometry (SE) analysis at energy range of 0.5 - 6.5 eV. Room temperature SE data for Ψ (amplitude ratio) and Δ (phase difference) between p- and s- polarized light waves are taken with multiple incident angles at several spots on the samples. Here, absorption coefficient has been extracted from SE measurements at photon incident angle of 70° for different Ta concentration (0.01, 0.4, and 5 at. %). Multilayer modelling is performed which takes into account reflections at each interface through Fresnel coefficients to obtain reasonably well the fitting of Ψ and Δ data simultaneously. As the results, we estimate that film thickness increases by increasing Ta concentration accompanied by the formation of a new electronic structure. By increasing Ta impurities, the blueshift of absorption coefficient (α) peaks is observable. This result indicates that TiO2 thin film becomes optically resistive by introducing Ta doping. Schematic model of interband transition inTiO2:Ta will be proposed base on obtained optical properties. This study enables us to predict the role of Ta doping on the electronic and optical band structures of TiO2 thin film. Due to a processing error by AIP Publishing, an incorrect version of the above article was published on 30 September 2015 that omitted the name of author Toto Winata. AIP Publishing apologizes for this error. All online versions of the article were corrected on 7 October 2015. The author names and affiliations appear correctly above.

  4. In situ epitaxial growth of ordered FePt (001) films with ultra small and uniform grain size using a RuAl underlayer

    SciTech Connect

    Shen, W.K.; Judy, J. H.; Wang Jianping

    2005-05-15

    In situ epitaxial growth of ordered FePt thin films with small and uniform grain size using RuAl underlayer is reported. A transmission electron microscopy image of a 20-nm RuAl layer deposited on a glass substrate revealed small (D{approx}5.0 nm) and uniform ({delta}D/D{approx}15%) grains. The (001) texture was formed in RuAl films at a substrate temperature higher than 100 deg. C. The FePt L1{sub 0} (001) texture with mean grain size of 6.63 nm and narrow size distribution (17%) has been successfully induced using a RuAl underlayer at a substrate temperature of 400 deg. C. The influences of the RuAl composition ratio and Pt interlayer were studied.

  5. Characteristics of Y-Ba-Cu-O superconductor films on GaAs with an Al sub 2 O sub 3 or AlGaO sub 3 buffer layer

    SciTech Connect

    Shewchun, J.; Chen, Y.; Hoelder, J.S.; Uher, C. )

    1991-06-10

    By depositing a buffer layer of Al{sub 2}O{sub 3} on GaAs, we have been able to laser ablate a superconducting film of Y{sub 1}Ba{sub 2}Cu{sub 3}O{sub 7{minus}{ital x}} overtop. The onset of superconductivity is 92 K and zero resistance is observed at 80 K in a structure with a suitably annealed Al{sub 2}O{sub 3} film which is converted to AlGaO{sub 3}. Both the Al{sub 2}O{sub 3}-GaAs and the Al{sub 2}O{sub 3}-Y{sub 1}Ba{sub 2}Cu{sub 3}O{sub 7{minus}{ital x}} interfaces are remarkably well preserved with virtually no interdiffusion or interaction. The Al{sub 2}O{sub 3} or homolog AlGaO{sub 3} film also prevents decomposition of the GaAs at the deposition temperature of 730 {degree}C.

  6. Low-frequency dielectric properties of intrinsic and Al-doped rutile TiO2 thin films grown by the atomic layer deposition technique

    NASA Astrophysics Data System (ADS)

    Kassmi, M.; Pointet, J.; Gonon, P.; Bsiesy, A.; Vallée, C.; Jomni, F.

    2016-06-01

    Dielectric spectroscopy is carried out for intrinsic and aluminum-doped TiO2 rutile films which are deposited on RuO2 by the atomic layer deposition technique. Capacitance and conductance are measured in the 0.1 Hz-100 kHz range, for ac electric fields up to 1 MVrms/cm. Intrinsic films have a much lower dielectric constant than rutile crystals. This is ascribed to the presence of oxygen vacancies which depress polarizability. When Al is substituted for Ti, the dielectric constant further decreases. By considering Al-induced modification of polarizability, a theoretical relationship between the dielectric constant and the Al concentration is proposed. Al doping drastically decreases the loss in the very low frequency part of the spectrum. However, Al doping has almost no effect on the loss at high frequencies. The effect of Al doping on loss is discussed through models of hopping transport implying intrinsic oxygen vacancies and Al related centers. When increasing the ac electric field in the MVrms/cm range, strong voltage non-linearities are evidenced in undoped films. The conductance increases exponentially with the ac field and the capacitance displays negative values (inductive behavior). Hopping barrier lowering is proposed to explain high-field effects. Finally, it is shown that Al doping strongly improves the high-field dielectric behavior.

  7. Phase Formation and Oxidation Behavior at 500 °C in a Ni-Co-Al Thin-Film Materials Library.

    PubMed

    Naujoks, Dennis; Richert, Jerome; Decker, Peer; Weiser, Martin; Virtanen, Sannakaisa; Ludwig, Alfred

    2016-09-12

    The complete ternary system Ni-Co-Al was fabricated as a thin film materials library by combinatorial magnetron sputtering and was annealed subsequently in several steps in Ar and under atmospheric conditions at 500 °C. Ni-Co-Al is the base system for both Ni- and Co-based superalloys. Therefore, the phases occurring in this system and their oxidation behavior is of high interest. The Ni-Co-Al materials library was investigated using high-throughput characterization methods such as optical measurements, resistance screening, automated EDX, automated XRD, and XPS. From the obtained data a thin film phase diagram for the Ni-Co-Al system in its state after annealing at 500 °C in air was established. Furthermore, a surface oxide composition map of the full Ni-Co-Al system for oxidation at 500 °C was concluded. As a result, it could be shown that at 500 °C an amount of 10 at. % Al is necessary for a Ni-Co-Al thin film to produce a protective Al-oxide scale. PMID:27392254

  8. A comparison of tackified, miniemulsion core-shell acrylic latex films with corresponding particle-blend films: structure-property relationships.

    PubMed

    Canetta, Elisabetta; Marchal, Jeanne; Lei, Chun-Hong; Deplace, Fanny; König, Alexander M; Creton, Costantino; Ouzineb, Keltoum; Keddie, Joseph L

    2009-09-15

    Tackifying resins (TRs) are often added to pressure-sensitive adhesive films to increase their peel strength and adhesion energy. In waterborne adhesives, the TR is dispersed in water using surfactants and then blended with colloidal polymers in water (i.e., latex). In such waterborne systems, there are problems with the colloidal stability and difficulty in applying coatings of the particle blends; the films are often hydrophilic and subject to water uptake. Here, an alternative method of making waterborne, tackified adhesives is demonstrated. The TR is incorporated within the core of colloidal polymer particles via miniemulsion polymerization. Atomic force microscopy (AFM) combined with force spectroscopy analysis reveals there is heterogeneity in the distribution of the TR in films made from particle blends and also in films made from miniemulsion polymers. Two populations, corresponding to TR-rich and acrylic-rich components, were identified through analysis of the AFM force-displacement curves. The nanoscale maximum adhesion force and adhesion energy were found to be higher in a miniemulsion film containing 12 wt % tackifying resin in comparison to an equivalent blended film. The macroscale tack and viscoelasticity are interpreted by consideration of the nanoscale structure and properties. The incorporation of tackifying resin through a miniemulsion polymerization process not only offers clear benefits in the processing of the adhesive, but it also leads to enhanced adhesion properties.

  9. Stable and Flexible CuInS2/ZnS:Al-TiO2 Film for Solar-Light-Driven Photodegradation of Soil Fumigant.

    PubMed

    Yan, Lili; Li, Zhichun; Sun, Mingxing; Shen, Guoqing; Li, Liang

    2016-08-10

    Semiconductor quantum dots (QDs) are suitable light absorbers for photocatalysis because of their unique properties. However, QDs generally suffer from poor photochemical stability against air, limiting their applications in photocatalysis. In this study, a stable solar-light-driven QDs-containing photocatalytic film was developed to facilitate photocatalytic degradation of the soil fumigant 1,3-dichloropropene (1,3-D). Highly stable CuInS2/ZnS:Al core/shell QDs (CIS/ZnS:Al QDs) were synthesized by doping Al into the ZnS shell and controlling ZnS:Al shell thickness; the CIS/ZnS:Al QDs were subsequently combined with TiO2 to form a CIS/ZnS:Al-TiO2 photocatalyst. The optimized ZnS:Al shell thickness for 1,3-D photodegradation was approximately 1.3 nm, which guaranteed and balanced the good photocatalytic activity and stability of the CIS/ZnS:Al-TiO2 photocatalyst. The photodegradation efficiency of 1,3-D can be maintained up to more than 80% after five cycles during recycling experiment. When CIS/ZnS:Al-TiO2 was deposited as photocatalytic film on a flexible polyethylene terephthalate substrate, over 99% of cis-1,3-D and 98% of trans-1,3-D were depleted as they passed through the film during 15 h of irradiation under natural solar light. This study demonstrated that the stable CIS/ZnS:Al-TiO2 photocatalyst both in powder and film form is a promising agent for photodegradation and emission reduction of soil fumigants.

  10. Stable and Flexible CuInS2/ZnS:Al-TiO2 Film for Solar-Light-Driven Photodegradation of Soil Fumigant.

    PubMed

    Yan, Lili; Li, Zhichun; Sun, Mingxing; Shen, Guoqing; Li, Liang

    2016-08-10

    Semiconductor quantum dots (QDs) are suitable light absorbers for photocatalysis because of their unique properties. However, QDs generally suffer from poor photochemical stability against air, limiting their applications in photocatalysis. In this study, a stable solar-light-driven QDs-containing photocatalytic film was developed to facilitate photocatalytic degradation of the soil fumigant 1,3-dichloropropene (1,3-D). Highly stable CuInS2/ZnS:Al core/shell QDs (CIS/ZnS:Al QDs) were synthesized by doping Al into the ZnS shell and controlling ZnS:Al shell thickness; the CIS/ZnS:Al QDs were subsequently combined with TiO2 to form a CIS/ZnS:Al-TiO2 photocatalyst. The optimized ZnS:Al shell thickness for 1,3-D photodegradation was approximately 1.3 nm, which guaranteed and balanced the good photocatalytic activity and stability of the CIS/ZnS:Al-TiO2 photocatalyst. The photodegradation efficiency of 1,3-D can be maintained up to more than 80% after five cycles during recycling experiment. When CIS/ZnS:Al-TiO2 was deposited as photocatalytic film on a flexible polyethylene terephthalate substrate, over 99% of cis-1,3-D and 98% of trans-1,3-D were depleted as they passed through the film during 15 h of irradiation under natural solar light. This study demonstrated that the stable CIS/ZnS:Al-TiO2 photocatalyst both in powder and film form is a promising agent for photodegradation and emission reduction of soil fumigants. PMID:27414776

  11. Pulsed laser deposition of hydroxyapatite thin films on Ti-5Al-2.5Fe substrates with and without buffer layers

    NASA Astrophysics Data System (ADS)

    Nelea, V.; Ristoscu, C.; Chiritescu, C.; Ghica, C.; Mihailescu, I. N.; Pelletier, H.; Mille, P.; Cornet, A.

    2000-12-01

    We present a method for processing hydroxyapatite (HA) thin films on Ti-5Al-2.5Fe substrates. The films were grown by pulsed laser deposition (PLD) in vacuum at room temperature, using a KrF∗ excimer laser. The amorphous as-deposited HA films were recrystallized in ambient air by a thermal treatment at 550°C. The best results have been obtained when inserting a buffer layer of ceramic materials (TiN, ZrO2 or Al2O3). The films were characterized by complementary techniques: grazing incidence X-ray diffraction (GIXRD), scanning electron microscopy (SEM), cross-section transmission electron microscopy (XTEM), SAED, energy dispersive X-ray spectroscopy (EDS) and nanoindentation. The samples with buffer interlayer preserve the stoichiometry are completely recrystallized and present better mechanical characteristics as compared with that without buffer interlayer.

  12. CuAl{sub x}Ga{sub 1−x}Se{sub 2} thin films for photovoltaic applications: Optical and compositional analysis

    SciTech Connect

    López-García, J.; Maffiotte, C.; Guillén, C.; Herrero, J.

    2013-03-15

    Highlights: ► Wide band gap CAGS thin films have been obtained by selenization of evaporated metallic precursors. ► Direct nonlinear dependence of the band gap energy with the Al/(Al + Ga) ratio is found. ► The bowing parameter decreases when the CAGS film thickness increases. ► The Cu at% remains constant in depth, together with some Al, Ga and Se gradients. ► Surface is strongly oxidized but the oxidation is relatively low in bulk. - Abstract: Wide-band gap chalcopyrite semiconductors have a great interest due to their potential application in multi-junction thin film solar cells or as window layers. Polycrystalline CuAl{sub x}Ga{sub 1−x}Se{sub 2} (CAGS) thin films have been prepared by selenization of evaporated metallic precursor layers on bare and Mo-coated soda lime glass substrates. The optical properties of CAGS films of 2 thicknesses have been analyzed by spectrophotometry in the visible-infrared (VIS-IR) and the compositional characteristics have been studied by energy dispersive analysis of X-rays (EDAX) and X-ray photoelectron spectroscopy (XPS). The optical transmission increases and the band gap energy shifts toward higher values as the Al content increases, which indicates the partial substitution of Ga by Al. The dependence of the band gap with the composition has resulted to be nonlinear and a bowing parameter of b = 0.62 and b = 0.54 for 0.6 μm and 1.1 μm-CAGS samples, respectively, has been obtained. XPS data have shown an Al, Ga and Se composition gradient in depth and a surface strongly oxidized. However, XPS reveals that the Cu composition remains constant in depth and the oxidation is relatively low in bulk increasing slightly in the interface with Mo/SLG. Moreover, samples with high Al content reveal a higher contribution of CuO in depth.

  13. Practical comparison of sensitivity and resolution between STMAS and MQMAS for 27Al

    NASA Astrophysics Data System (ADS)

    Takahashi, Takafumi; Kanehashi, Koji; Shimoikeda, Yuichi; Nemoto, Takahiro; Saito, Koji

    2009-06-01

    An experimental comparison of sensitivity and resolution of satellite transition (ST) MAS and multiple quantum (MQ) MAS was performed for 27Al ( I = 5/2) using several pulse sequences with a z-filter and SPAM, and two inorganic samples of kaolin (Al 2Si 2O 5(OH) 4) and glass (43.1CaO-12.5Al 2O 3-44.4SiO 2). Six pulse sequences of STMAS (double-quantum filter-soft pulse added mixing = DQF-SPAM, double-quantum filter = DQF, double-quantum = DQ) and MQMAS (3QMAS- z-filter = 3Qz, 3QMAS-SPAM = 3Q-SPAM, 5QMAS- z-filter = 5Qz) are employed. All experiments have been conducted utilizing a static field of 16.4 T (700 MHz for 1H) and a rotor spinning frequency of 20 kHz. Dependence of S/N ratios as a function of radio frequency (r.f.) field strengths indicates that strong r.f. fields are essential to obtain a better S/N ratio in all experiments. High sensitivity is obtained in the following order: DQF-SPAM, DQF, DQ, 3QSPAM, and 3Qz, although the degree of sensitivity enhancement given by STMAS for glass is slightly smaller than that for kaolin. This might be due to the different excitation and conversion efficiencies of ST and MQ coherences as a function Cq values because quadrupolar interaction of the glass are widely distributed, or to motional broadening caused by framework flexibility in the structure of glass. With respect to resolution, the full widths at half maximum (FWHM) of F1 projections of DQF-STMAS and 3QMAS spectra for kaolin are found to be comparable, which agrees with a simulated result reported in a literature. For glass, the STMAS possess slightly wider line widths than 3QMAS. However, because such a difference in line widths of STMAS and 3QMAS spectra is substantially small, we have concluded that STMAS and 3QMAS have comparable resolution for crystalline and non-crystalline materials.

  14. Practical comparison of sensitivity and resolution between STMAS and MQMAS for 27Al.

    PubMed

    Takahashi, Takafumi; Kanehashi, Koji; Shimoikeda, Yuichi; Nemoto, Takahiro; Saito, Koji

    2009-06-01

    An experimental comparison of sensitivity and resolution of satellite transition (ST) MAS and multiple quantum (MQ) MAS was performed for (27)Al (I=5/2) using several pulse sequences with a z-filter and SPAM, and two inorganic samples of kaolin (Al(2)Si(2)O(5)(OH)(4)) and glass (43.1CaO-12.5Al(2)O(3)-44.4SiO(2)). Six pulse sequences of STMAS (double-quantum filter-soft pulse added mixing=DQF-SPAM, double-quantum filter=DQF, double-quantum=DQ) and MQMAS (3QMAS-z-filter=3Qz, 3QMAS-SPAM=3Q-SPAM, 5QMAS-z-filter=5Qz) are employed. All experiments have been conducted utilizing a static field of 16.4T (700MHz for (1)H) and a rotor spinning frequency of 20kHz. Dependence of S/N ratios as a function of radio frequency (r.f.) field strengths indicates that strong r.f. fields are essential to obtain a better S/N ratio in all experiments. High sensitivity is obtained in the following order: DQF-SPAM, DQF, DQ, 3QSPAM, and 3Qz, although the degree of sensitivity enhancement given by STMAS for glass is slightly smaller than that for kaolin. This might be due to the different excitation and conversion efficiencies of ST and MQ coherences as a function C(q) values because quadrupolar interaction of the glass are widely distributed, or to motional broadening caused by framework flexibility in the structure of glass. With respect to resolution, the full widths at half maximum (FWHM) of F(1) projections of DQF-STMAS and 3QMAS spectra for kaolin are found to be comparable, which agrees with a simulated result reported in a literature. For glass, the STMAS possess slightly wider line widths than 3QMAS. However, because such a difference in line widths of STMAS and 3QMAS spectra is substantially small, we have concluded that STMAS and 3QMAS have comparable resolution for crystalline and non-crystalline materials. PMID:19342257

  15. Stabilization of Hydrogen Production via Methanol Steam Reforming in Microreactor by Al2O3 Nano-Film Enhanced Catalyst Adhesion.

    PubMed

    Jeong, Heondo; Na, Jeong-Geol; Jang, Min Su; Ko, Chang Hyun

    2016-05-01

    In hydrogen production by methanol steam reforming reaction with microchannel reactor, Al2O3 thin film formed by atomic layer deposition (ALD) was introduced on the surface of microchannel reactor prior to the coating of catalyst particles. Methanol conversion rate and hydrogen production rate, increased in the presence of Al2O3 thin film. Over-view and cross-sectional scanning electron microscopy study showed that the adhesion between catalyst particles and the surface of microchannel reactor enhanced due to the presence of Al2O3 thin film. The improvement of hydrogen production rate inside the channels of microreactor mainly came from the stable fixation of catalyst particles on the surface of microchannels. PMID:27483762

  16. Stabilization of Hydrogen Production via Methanol Steam Reforming in Microreactor by Al2O3 Nano-Film Enhanced Catalyst Adhesion.

    PubMed

    Jeong, Heondo; Na, Jeong-Geol; Jang, Min Su; Ko, Chang Hyun

    2016-05-01

    In hydrogen production by methanol steam reforming reaction with microchannel reactor, Al2O3 thin film formed by atomic layer deposition (ALD) was introduced on the surface of microchannel reactor prior to the coating of catalyst particles. Methanol conversion rate and hydrogen production rate, increased in the presence of Al2O3 thin film. Over-view and cross-sectional scanning electron microscopy study showed that the adhesion between catalyst particles and the surface of microchannel reactor enhanced due to the presence of Al2O3 thin film. The improvement of hydrogen production rate inside the channels of microreactor mainly came from the stable fixation of catalyst particles on the surface of microchannels.

  17. A flexible transparent gas barrier film employing the method of mixing ALD/MLD-grown Al2O3 and alucone layers.

    PubMed

    Xiao, Wang; Hui, Duan Ya; Zheng, Chen; Yu, Duan; Qiang, Yang Yong; Ping, Chen; Xiang, Chen Li; Yi, Zhao

    2015-01-01

    Atomic layer deposition (ALD) has been widely reported as a novel method for thin film encapsulation (TFE) of organic light-emitting diodes and organic photovoltaic cells. Both organic and inorganic thin films can be deposited by ALD with a variety of precursors. In this work, the performances of Al2O3 thin films and Al2O3/alucone hybrid films have been investigated. The samples with a 50 nm Al2O3 inorganic layer deposited by ALD at a low temperature of 80°C showed higher surface roughness (0.503 ± 0.011 nm), higher water vapor transmission rate (WVTR) values (3.77 × 10(-4) g/m(2)/day), and lower transmittance values (61%) when compared with the Al2O3 (inorganic)/alucone (organic) hybrid structure under same conditions. Furthermore, a bending test upon single Al2O3 layers showed an increased WVTR of 1.59 × 10(-3) g/m(2)/day. However, the film with a 4 nm alucone organic layer inserted into the center displayed improved surface roughness, barrier performance, and transmittance. After the bending test, the hybrid film with 4 nm equally distributed alucone maintained better surface roughness (0.339 ± 0.014 nm) and barrier properties (9.94 × 10(-5) g/m(2)/day). This interesting phenomenon reveals that multilayer thin films consisting of inorganic layers and decentralized alucone organic components have the potential to be useful in TFE applications on flexible optical electronics.

  18. Effect of Film Formation Potential on Passive Behavior of Ultra-Fine-Grained 1050 Al Alloy Fabricated via ARB Process

    NASA Astrophysics Data System (ADS)

    Fattah-alhosseini, A.; Gashti, S. O.; Keshavarz, M. K.

    2016-04-01

    In this work, the effect of film formation potential on the passive behavior of ultra-fine-grained 1050 Al alloy in a borate buffer solution is investigated. For this purpose, the specimens were fabricated via accumulative roll bonding (ARB) process up to 1, 3, 5, and 7 passes. To determine the evolution of microstructure as a function of ARB process, atomic force microscopy (AFM) and transmission electron microscopy (TEM) were used. AFM images revealed that the grain size values decreased as the number of ARB passes increased. Moreover, TEM micrograph showed that mean grain size of the sample reached to about 340 nm after applying 7 passes of ARB. Potentiodynamic polarization plots indicated that, as the number of ARB passes increased, the corrosion and passive current densities decreased. Also, electrochemical impedance spectroscopy measurements showed that at selected applied potential above open circuit potential, the corrosion resistance of the 1050 Al alloy was systematically increased by applying further ARB passes. It was found that passive behavior of the ARBed 1050 Al alloy specimens were improved by reducing the grain size.

  19. Preparation of graphite and graphene thick film on AlN substrate

    NASA Astrophysics Data System (ADS)

    Gao, Saijie; Shen, Yue; Gu, Feng; Xu, Mengjie; Wu, Xiafan; Xu, Jindong

    2013-12-01

    High-purity AlN ceramic substrate was prepared by conventional sintering in N2 atmosphere at 1710°C for 3 hours. Measurement results of SEM, X-ray Diffraction (XRD) indicated that the AlN substrate was sintered completely, average particle size is about 1-3 μm and the porosity is very low. Graphite and graphene electrodes were obtained by simple doctor-blade coating method on AlN substrate. The samples were investigated by X-ray diffraction (XRD), Raman spectroscopy and scanning electron microscope (SEM). Sheet resistance is measured by the four-probe method. Annealing at H2 reduction atmosphere can slow down graphitized trend of graphene and protect it's structure. The graphite electrode was applied in typical sandwich-structure DSSCs with ZnO as photoanodes, and the photoelectric conversion efficiency (η) was about 0.78%, which can be optimized and applied in DSSCs by process optimization.

  20. Study on nanocomposite Ti-Al-Si-Cu-N films with various Si contents deposited by cathodic vacuum arc ion plating

    NASA Astrophysics Data System (ADS)

    Shi, J.; Muders, C. M.; Kumar, A.; Jiang, X.; Pei, Z. L.; Gong, J.; Sun, C.

    2012-10-01

    In this study, nanocomposite Ti-Al-Si-Cu-N films were deposited on high speed steel substrates by the vacuum cathode arc ion plating (AIP) technique. By virtue of X-ray diffraction (XRD) analysis, X-ray photoelectron spectroscopy (XPS), and field emission scanning electron microscopy (FESEM), the influence of silicon content on the film microstructure and characteristics was investigated systematically, including the chemical composition, crystalline structure as well as cross-section morphologies. With increasing the silicon content, a deterioration of the preferred orientation and a dense globular structure were detected. In the meanwhile, atomic force microscopy (AFM), nano-indentation, Rockwell indenter and reciprocating test were also utilized to analyze the hardness, elastic modulus, H3/E2, friction coefficient, adhesive strength and wear rate of the Ti-Al-Si-Cu-N films. The results showed that an optimal silicon content correlated with the best mechanical and tribological properties of the presented Ti-Al-Si-Cu-N films existed. With increasing the silicon content, the hardness, elastic modulus and the ratio H3/E2 first were improved gradually, and then were impaired sharply again. When the silicon content reached to 6 at.%, the film possessed the highest hardness, elastic modulus and ratio H3/E2 of approximately 24 GPa, 218 GPa and 0.31, respectively. Besides, films containing both 6 at.% and 10 at.% Si contents obtained a relatively low friction coefficient and a good adhesive strength. The wear rate decreased with an increase in hardness, with the highest hardness corresponding to a wear rate around 1.3 × 10-5 mm3/(N m) of the film with 6 at.% Si content. The correlations between hardness and tribological properties for the films were also examined. The essence of above phenomena was attributed to the variations of microstructure and morphologies in the films induced by the increasing silicon content.

  1. Microstructures and growth mechanisms of GaN films epitaxially grown on AlN/Si hetero-structures by pulsed laser deposition at different temperatures.

    PubMed

    Wang, Wenliang; Yang, Weijia; Lin, Yunhao; Zhou, Shizhong; Li, Guoqiang

    2015-11-13

    2 inch-diameter GaN films with homogeneous thickness distribution have been grown on AlN/Si(111) hetero-structures by pulsed laser deposition (PLD) with laser rastering technique. The surface morphology, crystalline quality, and interfacial property of as-grown GaN films are characterized in detail. By optimizing the laser rastering program, the ~300 nm-thick GaN films grown at 750 °C show a root-mean-square (RMS) thickness inhomogeneity of 3.0%, very smooth surface with a RMS surface roughness of 3.0 nm, full-width at half-maximums (FWHMs) for GaN(0002) and GaN(102) X-ray rocking curves of 0.7° and 0.8°, respectively, and sharp and abrupt AlN/GaN hetero-interfaces. With the increase in the growth temperature from 550 to 850 °C, the surface morphology, crystalline quality, and interfacial property of as-grown ~300 nm-thick GaN films are gradually improved at first and then decreased. Based on the characterizations, the corresponding growth mechanisms of GaN films grown on AlN/Si hetero-structures by PLD with various growth temperatures are hence proposed. This work would be beneficial to understanding the further insight of the GaN films grown on Si(111) substrates by PLD for the application of GaN-based devices.

  2. Optical characteristics of nanocrystalline Al{sub x}Ga{sub 1−x}N thin films deposited by hollow cathode plasma-assisted atomic layer deposition

    SciTech Connect

    Goldenberg, Eda; Ozgit-Akgun, Cagla; Biyikli, Necmi; Kemal Okyay, Ali

    2014-05-15

    Gallium nitride (GaN), aluminum nitride (AlN), and Al{sub x}Ga{sub 1−x}N films have been deposited by hollow cathode plasma-assisted atomic layer deposition at 200 °C on c-plane sapphire and Si substrates. The dependence of film structure, absorption edge, and refractive index on postdeposition annealing were examined by x-ray diffraction, spectrophotometry, and spectroscopic ellipsometry measurements, respectively. Well-adhered, uniform, and polycrystalline wurtzite (hexagonal) GaN, AlN, and Al{sub x}Ga{sub 1−x}N films were prepared at low deposition temperature. As revealed by the x-ray diffraction analyses, crystallite sizes of the films were between 11.7 and 25.2 nm. The crystallite size of as-deposited GaN film increased from 11.7 to 12.1 and 14.4 nm when the annealing duration increased from 30 min to 2 h (800 °C). For all films, the average optical transmission was ∼85% in the visible (VIS) and near infrared spectrum. The refractive indices of AlN and Al{sub x}Ga{sub 1−x}N were lower compared to GaN thin films. The refractive index of as-deposited films decreased from 2.33 to 2.02 (λ = 550 nm) with the increased Al content x (0 ≤ x ≤ 1), while the extinction coefficients (k) were approximately zero in the VIS spectrum (>400 nm). Postdeposition annealing at 900 °C for 2 h considerably lowered the refractive index value of GaN films (2.33–1.92), indicating a significant phase change. The optical bandgap of as-deposited GaN film was found to be 3.95 eV, and it decreased to 3.90 eV for films annealed at 800 °C for 30 min and 2 h. On the other hand, this value increased to 4.1 eV for GaN films annealed at 900 °C for 2 h. This might be caused by Ga{sub 2}O{sub 3} formation and following phase change. The optical bandgap value of as-deposited Al{sub x}Ga{sub 1−x}N films decreased from 5.75 to 5.25 eV when the x values decreased from 1 to 0.68. Furthermore, postdeposition annealing did not

  3. The effect of heating rate on the structural and electrical properties of sol-gel derived Al-doped ZnO films

    NASA Astrophysics Data System (ADS)

    Gao, Meizhen; Wu, Xiaonan; Liu, Jing; Liu, Wenbao

    2011-05-01

    Al-doped ZnO (AZO) films are prepared by sol-gel method with a proper annealing procedure. For the first time, we find that the heating rate which is normally neglected during the post annealing process plays a significant role in improving AZO properties. The AZO film with nanorod structure is obtained by using a rapid heating rate. The AZO nanorods can provide a faster conduction pathway for charge transport due to the high crystal quality and thus enhance the conductivity of the film significantly. After hydrogen treatment, the AZO nanorod film exhibits a minimum resistivity of 1.4 × 10 -3 Ω cm. This approach to the preparation of AZO nanorods by a simple rapid annealing process may be helpful for the development of sol-gel-derived TCO films.

  4. Data storage applications based on LiCoO2 thin films grown on Al2O3 and Si substrates

    NASA Astrophysics Data System (ADS)

    Svoukis, E.; Mihailescu, C. N.; Mai, V. H.; Schneegans, O.; Breza, K.; Lioutas, C.; Giapintzakis, J.

    2016-09-01

    In this study, LiCoO2 thin films were investigated for data storage applications based on scanning probe mediated approaches. LiCoO2, compared to other materials proposed for scanning probe mediated nanoscale patterning, is highly stable and exhibits reversible electrochemical surface modifications. LiCoO2 thin films have been grown by pulsed laser deposition on Al2O3 and Si substrates over a range of deposition temperatures. The crystal structure and the microstructure of the films has been inferred through in- and out-of-plane X-ray diffraction studies and high-resolution transmission electron microscopy, respectively. The influence of the film deposition temperature on the surface electrical properties of the LiCoO2 films is discussed along with the relevant mechanism of surface resistance modification.

  5. Intercalation of biomolecules into NiAl-NO 3 layered double hydroxide films synthesized in situ on anodic alumina/aluminium support

    NASA Astrophysics Data System (ADS)

    Zhao, Hua-Zhang; Chang, Ying-Yue; Yang, Jing; Yang, Qin-Zheng

    2013-03-01

    Layered double hydroxide (LDH) films were synthesized in situ on anodic alumina/aluminium (AAO/Al). Glucose oxidase (GOD) and L-ascorbic acid (vitamin C, VC) were intercalated respectively into the in-situ grown LDH films by anion-exchange in aqueous solutions. Dodecylsulfate (SDS) was used to expand the lamellar structure before GOD intercalation into the LDH film. The resulting products were characterized by scanning electron microscopy (SEM), x-ray diffraction (XRD), Fourier transform infrared (FTIR) spectroscopy and thermo gravimetric analysis (TGA). The results showed that VC and GOD were successfully intercalated into the in-situ synthesized LDH film. These biomolecules loaded LDH films could have potential applications in electrode modification, safe storage and effective delivery of bioactive compounds.

  6. Investigation of the biaxial stress of Al-doped ZnO thin films on a flexible substrate with RF magnetron sputtering

    NASA Astrophysics Data System (ADS)

    Huang, Kuo-Ting; Chen, Hsi-Chao; Cheng, Po-Wei; Chang, Jhe-Ming

    2016-01-01

    Transparent conductive Al-doped ZnO (AZO) thin films were deposited onto poly(ethylene terephthalate) (PET) substrate, using the radio frequency (RF) magnetron sputtering method. The residual stress of flexible electronics was investigated by a double beam shadow moiré interferometer with phase shifting interferometry (PSI). Moreover, the biaxial stress of AZO thin films can be graphically represented by using Mohr’s circle of stress. The residual stress of AZO thin films becomes more compressive with the increase in sputtering power. The maximum residual stress is -1115.74 MPa, and the shearing stress is 490.57 MPa at a sputtering power of 200 W. The trends of residual stress were evidenced by the X-ray diffraction (XRD) patterns and optical properties of AZO thin films. According to the evaluation results of the refractive index and the extinction coefficient, the AZO thin films have better quality when the sputtering power less than 100 W.

  7. AlO x /LiF composite protection layer for Cr-doped (Bi,Sb)2Te3 quantum anomalous Hall films

    NASA Astrophysics Data System (ADS)

    Ou, Yunbo; Feng, Yang; Feng, Xiao; Hao, Zhenqi; Zhang, Liguo; Liu, Chang; Wang, Yayu; He, Ke; Ma, Xucun; Xue, Qikun

    2016-08-01

    We have realized robust quantum anomalous Hall samples by protecting Cr-doped (Bi,Sb)2Te3 topological insulator films with a combination of LiF and AlO x capping layers. The AlO x /LiF composite capping layer well keeps the quantum anomalous Hall states of Cr-doped (Bi,Sb)2Te3 films and effectively prevent them from degradation induced by ambient conditions. The progress is a key step towards the realization of the quantum phenomena in heterostructures and devices based on quantum anomalous Hall system. Project supported by the National Natural Science Foundation of China (Grant No. 11325421).

  8. Growth of epitaxial LaAlO{sub 3} and CeO{sub 2} films using sol-gel precursors

    SciTech Connect

    Shoup, S.S.; Paranthaman, M.; Beach, D.B.

    1996-04-01

    LaAlO{sub 3} and CeO{sub 2} films have been successfully grown using sol-gel precursors. LaAlO{sub 3} precursor solution has been prepared from a metal alkoxide route and spun-cast on a SrTiO{sub 3} (100) single crystal to yield an epitaxial film following pyrolysis at 800{degrees}C in a rapid thermal annealer. A CeO{sub 2} precursor solution has been made using both an aqueous and an alkoxide route.

  9. Impact of device size and thickness of Al2O 3 film on the Cu pillar and resistive switching characteristics for 3D cross-point memory application.

    PubMed

    Panja, Rajeswar; Roy, Sourav; Jana, Debanjan; Maikap, Siddheswar

    2014-12-01

    Impact of the device size and thickness of Al2O3 film on the Cu pillars and resistive switching memory characteristics of the Al/Cu/Al2O3/TiN structures have been investigated for the first time. The memory device size and thickness of Al2O3 of 18 nm are observed by transmission electron microscope image. The 20-nm-thick Al2O3 films have been used for the Cu pillar formation (i.e., stronger Cu filaments) in the Al/Cu/Al2O3/TiN structures, which can be used for three-dimensional (3D) cross-point architecture as reported previously Nanoscale Res. Lett.9:366, 2014. Fifty randomly picked devices with sizes ranging from 8 × 8 to 0.4 × 0.4 μm(2) have been measured. The 8-μm devices show 100% yield of Cu pillars, whereas only 74% successful is observed for the 0.4-μm devices, because smaller size devices have higher Joule heating effect and larger size devices show long read endurance of 10(5) cycles at a high read voltage of -1.5 V. On the other hand, the resistive switching memory characteristics of the 0.4-μm devices with a 2-nm-thick Al2O3 film show superior as compared to those of both the larger device sizes and thicker (10 nm) Al2O3 film, owing to higher Cu diffusion rate for the larger size and thicker Al2O3 film. In consequence, higher device-to-device uniformity of 88% and lower average RESET current of approximately 328 μA are observed for the 0.4-μm devices with a 2-nm-thick Al2O3 film. Data retention capability of our memory device of >48 h makes it a promising one for future nanoscale nonvolatile application. This conductive bridging resistive random access memory (CBRAM) device is forming free at a current compliance (CC) of 30 μA (even at a lowest CC of 0.1 μA) and operation voltage of ±3 V at a high resistance ratio of >10(4). PMID:26088986

  10. Mechanical properties of Ti(C 0.7N 0.3) film produced by plasma electrolytic carbonitriding of Ti6Al4V alloy

    NASA Astrophysics Data System (ADS)

    Li, Xin-Mei; Han, Yong

    2008-08-01

    Porous nanocrystalline Ti(C 0.7N 0.3) film on Ti6Al4V substrate was prepared by plasma electrolytic carbonitriding (PECN). The film was characterized and analyzed by using a variety of analytical techniques, such as XRD, SEM, EDX, TEM, FESEM, Rockwell C indenter, scratch tester, Vickers microhardness tester and ring-on-block tribometer. The results showed that the film was about 15 μm thick and its hardness was Hv 2369 at a load of 0.2 N. The adhesion of the film was characterized by Lc and Pc value, and was found to be about 42 N and more than 800 N, respectively. The friction coefficients and wear volume loss of the PECN-treated samples sliding against a steel counterpart were much less than those of the untreated Ti6Al4V. The film possessed a good wear-resistance and antifriction under oil-lubricated condition due to its high hardness, adhesion and fracture toughness. Also, the porous surface morphology of the Ti(C 0.7N 0.3) film contributed to the enhanced tribological resistance by promoting the formation of lubricant film and entrapping wear debris.

  11. Laser damage properties of TiO{sub 2}/Al{sub 2}O{sub 3} thin films grown by atomic layer deposition

    SciTech Connect

    Wei Yaowei; Liu Hao; Sheng Ouyang; Liu Zhichao; Chen Songlin; Yang Liming

    2011-08-20

    Research on thin film deposited by atomic layer deposition (ALD) for laser damage resistance is rare. In this paper, it has been used to deposit TiO{sub 2}/Al{sub 2}O{sub 3} films at 110 deg. C and 280 deg. C on fused silica and BK7 substrates. Microstructure of the thin films was investigated by x-ray diffraction. The laser-induced damage threshold (LIDT) of samples was measured by a damage test system. Damage morphology was studied under a Nomarski differential interference contrast microscope and further checked under an atomic force microscope. Multilayers deposited at different temperatures were compared. The results show that the films deposited by ALD had better uniformity and transmission; in this paper, the uniformity is better than 99% over 100 mm {Phi} samples, and the transmission is more than 99.8% at 1064 nm. Deposition temperature affects the deposition rate and the thin film microstructure and further influences the LIDT of the thin films. As to the TiO{sub 2}/Al{sub 2}O{sub 3} films, the LIDTs were 6.73{+-}0.47 J/cm{sup 2} and 6.5{+-}0.46 J/cm{sup 2} at 110 deg. C on fused silica and BK7 substrates, respectively. The LIDTs at 110 deg. C are notably better than 280 deg. C.

  12. An improved procedure for preparing epitaxial Tl-2201 films on single crystals of LaAlO{sub 3} and SrTiO{sub 3}

    SciTech Connect

    Chen, H.Q.; Johansson, L.G.; Ivanov, Z.G.

    1999-11-01

    Epitaxial Tl-2201 films are prepared on single crystal LaAlO{sub 3} and SrTiO{sub 3} by thallization of thallium-free precursor films made by laser ablation. Thallization is carried out in two consecutive steps. In the first step, at 720 C, a smooth and epitaxial film is produced. The second thallization, at 820 C, improved film crystallinity and the {Tc}. The films were characterized by X-ray diffraction and by resistance and susceptibility measurements. For a film on single crystal LaAlO{sub 3}, the FWHM of the {Omega} scan (0,0,10) was 0.27{degree}. {Tc} was 84K while J{sub c} reached 1.6x10{sup 6} A/ cm{sup 2} at 77K. A film on single crystal SrTiO{sub 3} exhibited somewhat lower {Tc} (78 K) wile J{sub c} was much smaller (9.5 x 10{sup 3} A/cm{sup 2} at 70.4K).

  13. Structural and electrical properties of reactively sputtered InN thin films on AlN-buffered (00.1) sapphire substrates: Dependence on buffer and film growth temperatures and thicknesses

    NASA Astrophysics Data System (ADS)

    Kistenmacher, T. J.; Ecelberger, S. A.; Bryden, W. A.

    1993-08-01

    An extensive investigation of InN overlayers on AlN-buffered (00.1) sapphire by reactive magnetron sputtering has been undertaken and the dependencies of several basic materials properties (film thickness, development and quality of heteroepitaxy, film morphology, and electrical transport) on such key deposition parameters such as the growth temperatures of the insulating AlN buffer layer and the InN overlayer and their thicknesses have been determined. Three prominent effects of the AlN buffer layer are (1) the stabilization of heteroepitaxial growth over a broad range of film and buffer layer growth temperatures; (2) the attainment of a higher Hall mobility (up to 60 cm2/V s) over much of the same range; and, (3) the retention of heteroepitaxial growth, higher Hall mobility, and pseudo-two-dimensional growth even in the limit of an InN layer of ˜40 Å. In the context of a structure-zone model, the AlN buffer layer is projected to effectively raise the growth temperature of the InN thin film. The increase in effective growth temperature is, however, insufficient to overcome low atomic and cluster mobility and to achieve single-crystal InN thin film growth.

  14. Performance Comparison of Axisymmetric and Three-dimensional Hydrogen Film Coolant Injection in a 110N Hydrogen/oxygen Rocket

    NASA Technical Reports Server (NTRS)

    Arrington, Lynn A.; Reed, Brian D.

    1992-01-01

    An experimental performance comparison of two geometrically different fuel film coolant injection sleeves was conducted on a 110 N gaseous hydrogen/oxygen rocket. One sleeve had slots milled axially down the walls and the other had a smooth surface to give axisymmetric flow. The comparison was made to investigate a conclusion in an earlier study that attributed a performance underprediction to a symplifying modeling assumption of axisymmetric fuel film flow. The smooth sleeve had higher overall performance at one film coolant percentage and approximately the same or slightly better at another. The study showed that the lack of modeling of three-dimensional effects was not the cause of the performance underprediction as speculated in earlier analytical studies.

  15. Condom Use and High-Risk Sexual Acts in Adult Films: A Comparison of Heterosexual and Homosexual Films

    PubMed Central

    Elliott, Marc N.; Kerndt, Peter R.; Schuster, Mark A.; Brook, Robert H.; Gelberg, Lillian

    2009-01-01

    Objectives. We compared the prevalence of condom use during a variety of sexual acts portrayed in adult films produced for heterosexual and homosexual audiences to assess compliance with state Occupational Health and Safety Administration regulations. Methods. We analyzed 50 heterosexual and 50 male homosexual films released between August 1, 2005, and July 31, 2006, randomly selected from the distributor of 85% of the heterosexual adult films released each year in the United States. Results. Penile–vaginal intercourse was protected with condoms in 3% of heterosexual scenes. Penile–anal intercourse, common in both heterosexual (42%) and homosexual (80%) scenes, was much less likely to be protected with condoms in heterosexual than in homosexual scenes (10% vs 78%; P < .001). No penile–oral acts were protected with condoms in any of the selected films. Conclusions. Heterosexual films were much less likely than were homosexual films to portray condom use, raising concerns about transmission of HIV and other sexually transmitted diseases, especially among performers in heterosexual adult films. In addition, the adult film industry, especially the heterosexual industry, is not adhering to state occupational safety regulations. PMID:19218178

  16. Controlling the electronic properties of SWCNT FETs via modification of the substrate surface prior to atomic layer deposition of 10 nm thick Al2O3 film

    NASA Astrophysics Data System (ADS)

    Kim, Joonsung; Yoon, Jangyeol; Na, Junhong; Yee, Seongmin; Kim, Gyu Tae; Ha, Jeong Sook

    2013-11-01

    We demonstrate the controllability of the electronic transport properties of single-walled carbon nanotube (SWCNT) field effect transistors (FETs) via the use of 10 nm thick atomic-layer-deposited aluminum oxide (Al2O3) gate dielectric films, where the substrate surfaces were modified with differently functionalized self-assembled monolayers (SAMs) prior to their growth, namely SAMs with hydrophobic (-CH3) or hydrophilic (-OH) groups. Al2O3 grown on a hydrophilic surface causes the SWCNT FETs to keep their intrinsic p-type transfer characteristics by alleviating the electron-doping effect originating from defects in the Al2O3 film. However, the SAM with methyl groups increases the defect density of the Al2O3 film, enhancing the n-type transfer characteristics and inducing ambipolar to n-type behavior in the SWCNT FETs. In this work, we find clues about the distribution of charged defects in the Al2O3 film, which strongly influences the transfer characteristics of the SWCNT FETs, by measuring the thickness-dependent flat band voltages.

  17. Electrical performance of Al2O3 gate dielectric films deposited by atomic layer deposition on 4H-SiC

    NASA Astrophysics Data System (ADS)

    Tanner, Carey M.; Perng, Ya-Chuan; Frewin, Christopher; Saddow, Stephen E.; Chang, Jane P.

    2007-11-01

    Stoichiometric and pure Al2O3 gate dielectric films were grown on n-type 4H-SiC by a thermal atomic layer deposition process. The electrical properties of both amorphous and epitaxial Al2O3 films were studied by capacitance-voltage and current-voltage measurements of metal-oxide-semiconductor capacitors. A dielectric constant of 9 and a flatband voltage shift of +1.3V were determined. A leakage current density of 10-3A/cm2 at 8MV/cm was obtained for the amorphous Al2O3 films, lower than that of any high-κ gate oxide on 4H-SiC reported to date. A Fowler-Nordheim tunneling mechanism was used to determine an Al2O3/4H-SiC barrier height of 1.58eV. Higher leakage current was obtained for the epitaxial γ-Al2O3 films, likely due to grain boundary conduction.

  18. Influence of Al content on the properties of ternary Al{sub 2x}In{sub 2−2x}O{sub 3} alloy films prepared on YSZ (1 1 1) substrates by MOCVD

    SciTech Connect

    Feng, Xianjin; Zhao, Cansong; Li, Zhao; Luo, Yi; Ma, Jin

    2015-10-15

    Highlights: • Al{sub 2x}In{sub 2−2x}O{sub 3} films were prepared on the Y-stabilized ZrO{sub 2} (1 1 1) substrates by MOCVD at 700 °C. • A phase transition from the bixbyite In{sub 2}O{sub 3} structure to the amorphous structure was observed. • The lowest resistivity of 4.7 × 10{sup −3} Ω cm was obtained for the Al{sub 0.4}In{sub 1.6}O{sub 3} film. • Tunable optical band gap from 3.7 to 4.8 eV was obtained. - Abstract: The ternary Al{sub 2x}In{sub 2−2x}O{sub 3} films with different Al contents of x [Al/(Al + In) atomic ratio] have been fabricated on the Y-stabilized ZrO{sub 2} (1 1 1) substrates by metal organic chemical vapor deposition at 700 °C. The structural, electrical and optical properties of the films as a result of different Al contents (x = 0.1–0.9) were investigated in detail. With the increase of Al content from 10% to 90%, a phase transition from the bixbyite In{sub 2}O{sub 3} structure with a single orientation along (1 1 1) to the amorphous structure was observed. The minimum resistivity of 4.7 × 10{sup −3} Ω cm, a carrier concentration of 1.4 × 10{sup 20} cm{sup −3} and a Hall mobility of 9.8 cm{sup 2} v{sup −1} s{sup −1} were obtained for the sample with x = 0.2. The average transmittances for the Al{sub 2x}In{sub 2−2x}O{sub 3} films in the visible range were all over 78% and the optical band gap of the films could be tuned from 3.7 to 4.8 eV.

  19. Magnetic and Gilbert damping properties of L21-Co2FeAl film grown by molecular beam epitaxy

    NASA Astrophysics Data System (ADS)

    Qiao, Shuang; Nie, Shuaihua; Zhao, Jianhua; Huo, Yan; Wu, Yizheng; Zhang, Xinhui

    2013-10-01

    Co2FeAl film with L21 structure was prepared. Its magnetic and Gilbert damping properties were studied by ferromagnetic resonance (FMR) and time-resolved magneto-optical Kerr effect (TR-MOKE), respectively. It is observed that the apparent damping parameter decreases drastically with increasing magnetic field at low field regime and eventually becomes a constant value of 0.004 at high field regime by TR-MOKE measurements. A Gilbert damping parameter of 0.008 in the hard axis by FMR measurement has also been obtained, which is comparable with that extracted from TR-MOKE measurements at low external field, indicating the extrinsic damping processes involved in the low field regime.

  20. Perpendicular magnetization of Co2FeAl full-Heusler alloy films induced by MgO interface

    NASA Astrophysics Data System (ADS)

    Wen, Zhenchao; Sukegawa, Hiroaki; Mitani, Seiji; Inomata, Koichiro

    2011-06-01

    The perpendicular magnetization of Co2FeAl (CFA) full-Heusler alloy films was achieved in the structures of CFA/MgO and MgO/CFA with the perpendicular magnetic anisotropy energy density (KU) of 2-3×106 erg/cm3, which can be used as the perpendicular ferromagnetic electrodes of MgO-based magnetic tunnel junctions (MTJs) with high thermal stability at sub-50-nm dimension. The CFA thickness dependence of KU was investigated at different annealing temperatures, indicating that the perpendicular anisotropy of CFA is contributed by the interfacial anisotropy between CFA and MgO. This letter will open up a way for obtaining perpendicular magnetization of Co-based full-Heusler alloys, which is promising for further reduction in the critical current of current induced magnetization switching in MgO-based MTJ nanopillars with perpendicular full-Heusler alloy electrodes.