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Sample records for al films comparison

  1. Comparison of ALD and IBS Al2O3 films for high power lasers

    NASA Astrophysics Data System (ADS)

    Liu, Hao; Jensen, Lars; Becker, Jürgen; Wurz, Marc Christopher; Ma, Ping; Ristau, Detlev

    2016-12-01

    Atomic layer deposition (ALD) has been widely studied in Micro-electronics due to its self-terminating property. ALD also grows film coatings with precise thickness and nodular-free structure, which are desirable properties for high power coatings. The depositing process was studied to produce uniform, stable and economic Al2O3 single layers. The layer properties relevant to high power laser industry were studied and compared with IBS Al2O3 single layers. ALD Al2O3 showed a stable growth of 0.104 nm/cycle, band gap energy of 6.5 eV and tensile stress of about 480 MPa. It also showed a low absorption at wavelength 1064 nm within several ppm, and LIDT above 30 J/cm2. These properties are superior to the reference IBS Al2O3 single layers and indicate a high versatility of ALD Al2O3 for high power coatings.

  2. Solution based prompt inorganic condensation and atomic layer deposition of Al{sub 2}O{sub 3} films: A side-by-side comparison

    SciTech Connect

    Smith, Sean W.; Conley, John F.; Wang, Wei; Keszler, Douglas A.

    2014-07-15

    A comparison was made of Al{sub 2}O{sub 3} films deposited on Si via prompt inorganic condensation (PIC) and atomic layer deposition (ALD). Current–voltage measurements as a function of annealing temperature indicate that the solution-processed PIC films, annealed at 500 °C, exhibit lower leakage and roughly equivalent breakdown strength in comparison to ALD films. PIC films are less dense than as-deposited ALD films and capacitance–voltage measurements indicate a lower relative dielectric constant. On the basis of x-ray photoelectron spectroscopy, transmission electron microscopy, and energy dispersive x-ray spectroscopy, it is found that the 500 °C anneal results in the formation of a ∼6 nm thick interfacial SiO{sub 2} layer at the Si interface. This SiO{sub 2} interfacial layer significantly affects the electrical performance of PIC Al{sub 2}O{sub 3} films deposited on Si.

  3. Atomic layer deposition of Al-doped ZnO films using ozone as the oxygen source: A comparison of two methods to deliver aluminum

    SciTech Connect

    Yuan Hai; Luo Bing; Yu Dan; Cheng, An-jen; Campbell, Stephen A.; Gladfelter, Wayne L.

    2012-01-15

    Aluminum-doped ZnO films were prepared by atomic layer deposition at 250 deg. C using diethylzinc (DEZ), trimethylaluminum (TMA), and ozone as the precursors. Two deposition methods were compared to assess their impact on the composition, structural, electrical, and optical properties as a function of Al concentration. The first method controlled the Al concentration by changing the relative number of Al to Zn deposition cycles; a process reported in the literature where water was used as the oxygen source. The second method involved coinjection of the DEZ and TMA during each cycle where the partial pressures of the precursors control the aluminum concentration. Depth profiles of the film composition using Auger electron spectroscopy confirmed a layered microstructure for the films prepared by the first method, whereas the second method led to a homogeneous distribution of the aluminum throughout the ZnO film. Beneath the surface layer the carbon concentrations for all of the films were below the detection limit. Comparison of their electrical and optical properties established that films deposited by coinjection of the precursors were superior.

  4. A Comparison of MOCLD With PLD Ba(x)Sr(1-x)TiO3 Thin Films on LaAlO3 for Tunable Microwave Applications

    NASA Technical Reports Server (NTRS)

    VanKeuls, F. W.; Mueller, C. H.; Romanofsky, R. R.; Warner, J. D.; Miranda, F. A.; Jiang, H.

    2002-01-01

    Historically, tunable dielectric devices using thin crystalline Ba(x)Sr(1-x)TiO3 (BST) films deposited on lattice-matched substrates, such as LaAlO3, have generally been grown using pulsed laser deposition (PLD). Highly oriented BST films can be grown by PLD but large projects are hampered by constraints of deposition area, deposition time and expense. The Metal-Organic Chemical Liquid Deposition (MOCLD) process allows for larger areas, faster turnover and lower cost. Several BST films deposited on LaAlO3 by MOCLD have been tested in 16 GHz coupled microstrip phase shifters. They can be compared with many PLD BST films tested in the same circuit design. The MOCLD phase shifter performance of 293 deg. phase shift with 53 V/micron dc bias and a figure of merit of 47 deg./dB is comparable to the most highly oriented PLD BST films. The PLD BST films used here have measured XRD full-width-at-half-maxima (FWHM) as low as 0.047 deg.. The best FWHM of these MOCLD BST films has been measured to be 0.058 deg.

  5. Comparison of crystallization kinetics in a-Si/Cu and a-Si/Al bilayer recording films under thermal annealing and pulsed laser irradiation

    NASA Astrophysics Data System (ADS)

    Her, Yung-Chiun; Chen, Chih-Wei; Wu, Chun-Lin

    2006-06-01

    Under thermal annealing, the crystallization temperatures of a-Si in a-Si/Cu and a-Si/Al bilayer recording films were significantly reduced to around 485 and 357 °C, respectively, and the activation energies for crystallization were reduced to about 3.3 eV. The formation of Cu3Si phase prior to crystallization of a-Si was found to occur at around 175 °C in a-Si/Cu, while no Al silicide was observed in a-Si/Al before crystallization of a-Si. The reaction exponents for a-Si/Cu and a-Si/Al were determined to be around 1.8 and 1.6, respectively, corresponding to a crystallization process in which grain growth occurs with nucleation, and the nucleation rate decreases with the progress of grain growth. Under pulsed laser irradiation, the precipitation of Cu3Si phases and crystallization of a-Si were observed in a-Si/Cu, while the crystallization and reamorphization of a-Si took place sequentially in a-Si/Al. The reaction exponents for a-Si/Cu and a-Si/Al, determined to be about 2.0 and 2.2, respectively, are slightly higher than those under thermal annealing, indicating that the crystallization processes of a-Si/Cu and a-Si/Al under pulsed laser irradiation are similar to those under thermal annealing. However, the decrease of nucleation rate with the progress of grain growth is slower. At the same time, the activation energies for crystallization of a-Si/Cu and a-Si/Al, estimated to be about 0.18 and 0.22 eV, respectively, are nearly an order of magnitude lower than those under thermal annealing. This may be explained by the explosive crystallization of a-Si by mechanical impact, with a high power pulsed laser.

  6. Comparison of heterojunction device parameters for pure and doped ZnO thin films with IIIA (Al or In) elements grown on silicon at room ambient

    NASA Astrophysics Data System (ADS)

    Kaya, Ahmet; Cansizoglu, Hilal; Mamtaz, Hasina H.; Mayet, Ahmed S.; Islam, M. Saif

    2016-09-01

    In this work, pure and IIIA element doped ZnO thin films were grown on p type silicon (Si) with (100) orientated surface by sol-gel method, and were characterized for comparing their electrical characteristics. The heterojunction parameters were obtained from the current-voltage (I-V) and capacitance-voltage (C-V) characteristics at room temperature. The ideality factor (n), saturation current (Io) and junction resistance of ZnO/p-Si heterojunction for both pure and doped (with Al or In) cases were determined by using different methods at room ambient. Other electrical parameters such as Fermi energy level (EF), barrier height (ΦB), acceptor concentration (Na), built-in potential (Φi) and voltage dependence of surface states (Nss) profile were obtained from the C-V measurements. The results reveal that doping ZnO with IIIA (Al or In) elements to fabricate n-ZnO/p-Si heterojunction can result in high performance diode characteristics.

  7. Comparison of the microstructure and magnetic properties of strontium hexaferrite films deposited on Al2O3(0001), Si(100)/Pt(111) and Si(100) substrates by pulsed laser technique

    NASA Astrophysics Data System (ADS)

    Masoudpanah, S. M.; Seyyed Ebrahimi, S. A.; Ong, C. K.

    2014-01-01

    Strontium hexaferrite SrFe12O19 (SrM) films have been deposited on Al2O3(0001), Si(100)/Pt(111) and Si(100) substrates. The (001) oriented SrFe12O19 films deposited on the Al2O3(0001) and Si(100)/Pt(111) substrates have been confirmed by X-ray diffraction patterns. Higher coercivity in perpendicular direction rather than in-plane direction of the SrM/Al2O3(0001) and SrM/Pt(111) films showed that the films had perpendicular magnetic anisotropy. The (001) orientation and similar microstructure and magnetic properties of the SrM/Al2O3(0001) and SrM/Pt(111) films show the Al2O3(0001) substrate can be replaced by the Si(100)/Pt(111) substrate.

  8. TI--CR--AL--O thin film resistors

    DOEpatents

    Jankowski, Alan F.; Schmid, Anthony P.

    2000-01-01

    Thin films of Ti--Cr--Al--O are used as a resistor material. The films are rf sputter deposited from ceramic targets using a reactive working gas mixture of Ar and O.sub.2. Resistivity values from 10.sup.4 to 10.sup.10 Ohm-cm have been measured for Ti--Cr--Al--O film <1 .mu.m thick. The film resistivity can be discretely selected through control of the target composition and the deposition parameters. The application of Ti--Cr--Al--O as a thin film resistor has been found to be thermodynamically stable, unlike other metal-oxide films. The Ti--Cr--Al--O film can be used as a vertical or lateral resistor, for example, as a layer beneath a field emission cathode in a flat panel display; or used to control surface emissivity, for example, as a coating on an insulating material such as vertical wall supports in flat panel displays.

  9. Semiconducting properties of Al doped ZnO thin films.

    PubMed

    Al-Ghamdi, Ahmed A; Al-Hartomy, Omar A; El Okr, M; Nawar, A M; El-Gazzar, S; El-Tantawy, Farid; Yakuphanoglu, F

    2014-10-15

    Aluminum doped ZnO (AZO) thin films were successfully deposited via spin coating technique onto glass substrates. Structural properties of the films were analyzed by X-ray diffraction, atomic force microscopy (AFM) and energy dispersive X-ray spectroscopy. X-ray diffraction results reveal that all the films are polycrystalline with a hexagonal wurtzite structure with a preferential orientation according to the direction (002) plane. The crystallite size of ZnO and AZO films was determined from Scherrer's formula and Williamson-Hall analysis. The lattice parameters of the AZO films were found to decrease with increasing Al content. Energy dispersive spectroscopy (EDX) results indicate that Zn, Al and O elements are present in the AZO thin films. The electrical conductivity, mobility carriers and carrier concentration of the films are increased with increasing Al doping concentration. The optical band gap (Eg) of the films is increased with increasing Al concentration. The AZO thin films indicate a high transparency in the visible region with an average value of 86%. These transparent AZO films may be open a new avenue for optoelectronic and photonic devices applications in near future.

  10. Growth and Oxidation of Thin Film Al(2)Cu

    SciTech Connect

    SON,KYUNG-AH; MISSERT,NANCY A.; BARBOUR,J. CHARLES; HREN,J.J.; COPELAND,ROBERT GUILD; MINOR,KENNETH G.

    2000-01-18

    Al{sub 2}Cu thin films ({approx} 382 nm) are fabricated by melting and resolidifying Al/Cu bilayers in the presence of a {micro} 3 nm Al{sub 2}O{sub 3} passivating layer. X-ray Photoelectron Spectroscopy (XPS) measures a 1.0 eV shift of the Cu2p{sub 3/2} peak and a 1.6 eV shift of the valence band relative to metallic Cu upon Al{sub 2}Cu formation. Scanning Electron microscopy (SEM) and Electron Back-Scattered Diffraction (EBSD) show that the Al{sub 2}Cu film is composed of 30-70 {micro}m wide and 10-25 mm long cellular grains with (110) orientation. The atomic composition of the film as estimated by Energy Dispersive Spectroscopy (EDS) is 67 {+-} 2% Al and 33 {+-} 2% Cu. XPS scans of Al{sub 2}O{sub 3}/Al{sub 2}Cu taken before and after air exposure indicate that the upper Al{sub 2}Cu layers undergo further oxidation to Al{sub 2}O{sub 3} even in the presence of {approx} 5 nm Al{sub 2}O{sub 3}. The majority of Cu produced from oxidation is believed to migrate below the Al{sub 2}O{sub 3} layers, based upon the lack of evidence for metallic Cu in the XPS scans. In contrast to Al/Cu passivated with Al{sub 2}O{sub 3}, melting/resolidifying the Al/Cu bilayer without Al{sub 2}O{sub 3} results in phase-segregated dendritic film growth.

  11. Fabrication of Fe-Al nanoparticles by selective oxidation of Fe-Al thin films

    NASA Astrophysics Data System (ADS)

    Jang, Pyungwoo; Shin, Seungchan; Jung, Chip-Sup; Kim, Kwang-Ho; Seomoon, Kyu

    2013-04-01

    The possibility of a new technique for fabricating nanoparticles from thin films using selective oxidation in an atmosphere mixture of water vapor and hydrogen was investigated. Fe-5wt.%Al films were RF-sputtered and annealed in the atmosphere mixture at 900°C for up to 200 min, in order to oxidize aluminum selectively. Thermodynamics simulation showed that temperatures exceeding 800°C are necessary to prevent iron from being oxidized, as confirmed by the depth profile of XPS. As the annealing time increased, the morphology of the 200-nm Fe-Al films changed from the continuous to the discontinuous type; thus, particulate Fe-Al films formed after 100 min. The particulate 10- to 100-nm Fe-Al films showed super-paramagnetic behavior after the oxidation. Thus, a new technique for fabricating nanoparticles was successfully introduced using selective oxidation.

  12. Damage analysis in Al thin films fatigued at ultrahigh frequencies

    NASA Astrophysics Data System (ADS)

    Eberl, Christoph; Spolenak, Ralph; Kraft, Oliver; Kubat, Franz; Ruile, Werner; Arzt, Eduard

    2006-06-01

    A quantitative damage analysis provides insight into the damage mechanisms and lifetimes of aluminum thin films fatigued at ultrahigh frequencies. Surface acoustic wave test devices were used to test continuous and patterned Al thin films up to more than 1014 cycles. The analysis revealed increasing extrusion and void formation concentrated at grain boundaries. This finding and the observed grain growth indicate a high material flux at the grain boundaries induced by the cyclic load. A correlation between device degradation and defect density is established which is explained by a theoretical model. For stress amplitudes as low as 14 MPa lifetime measurements showed no fatigue limit for 420 nm Al thin films.

  13. Growth of ZnO:Al thin films onto different substrates

    SciTech Connect

    Prepelita, Petronela; Medianu, R.; Garoi, F.; Moldovan, A.

    2010-11-01

    In this paper we present some results regarding undoped and doped ZnO thin films deposited on various substrates like glass, silicon and kapton by rf magnetron sputtering. The influence of the amount of aluminum as well as the usage of different substrates on the final photovoltaic properties of the thin films is studied. For this, structural-morphological and optical investigations on the thin films are conducted. It was found that three important factors must be taken into account for adjusting the final desired application intended for the deposited thin films. These factors are: deposition conditions, the nature of both the dopant material and the substrate. A comparison study between undoped and doped case is also realized. Smooth Al doped ZnO thin films with a polycrystalline structure and a lower roughness than undoped ZnO are obtained.

  14. Critical tensile and compressive strains for cracking of Al2O3 films grown by atomic layer deposition

    NASA Astrophysics Data System (ADS)

    Jen, Shih-Hui; Bertrand, Jacob A.; George, Steven M.

    2011-04-01

    Al2O3 atomic layer deposition (ALD) is a model ALD system and Al2O3 ALD films are excellent gas diffusion barrier on polymers. However, little is known about the response of Al2O3 ALD films to strain and the potential film cracking that would restrict the utility of gas diffusion barrier films. To understand the mechanical limitations of Al2O3 ALD films, the critical strains at which the Al2O3 ALD films will crack were determined for both tensile and compressive strains. The tensile strain measurements were obtained using a fluorescent tagging technique to image the cracks. The results showed that the critical tensile strain is higher for thinner thicknesses of the Al2O3 ALD film on heat-stabilized polyethylene naphthalate (HSPEN) substrates. A low critical tensile strain of 0.52% was measured for a film thickness of 80 nm. The critical tensile strain increased to 2.4% at a film thickness of 5 nm. In accordance with fracture mechanics modeling, the critical tensile strains and the saturation crack densities scaled as (1/h)1/2 where h is the Al2O3 ALD film thickness. The fracture toughness for cracking, KIC, of the Al2O3 ALD film was also determined to be KIC = 2.30 MPa m1/2. Thinner Al2O3 ALD film thicknesses also had higher critical strains for cracking from compressive strains. Field-emission scanning electron microscopy (FE-SEM) images revealed that Al2O3 ALD films with thicknesses of 30-50 nm on Teflon fluorinated ethylene propylene (FEP) substrates cracked at a critical compressive strain of ˜1.0%. The critical compressive strain increased to ˜2.0% at a film thickness of ˜20 nm. A comparison of the critical tensile strains on HSPEN substrates and critical compressive strains on Teflon FEP substrates revealed some similarities. The critical strain was ˜1.0% for film thicknesses of 30-50 nm for both tensile and compressive strains. The critical compressive strain then increased more rapidly than the critical tensile strain for thinner films with thicknesses

  15. Kerr effect enhancement and corrosion resistance improvement by AlN and AlSiN films (abstract)

    NASA Astrophysics Data System (ADS)

    Lee, Z. Y.; Miao, X. S.; Liu, X. J.; Lin, G. Q.; Wan, D. F.; Hu, Y. S.

    1990-05-01

    RE-TM amorphous thin films with perpendicular magnetic anisotropy are promising for use in erasable optical recording media. In order to improve the drawback of easy oxidation and lower C/N of RE-TM films, some protective layers such as SiO, SiO2, ZnS, AlN, and Si3N4 films were studied.1,2 We have studied the Kerr effect enhancement and corrosion resistance improvement by AlN and AlSiN films. AlN and AlSiN films were prepared on glass, PC, and PMMA substrates by a rf magnetron sputtering system with three targets using low sputtering power. The films have a high refractive index (2-2.15), high optical transparency (over 90%), and high stability. The relation between optical properties and rf reactive sputtering conditions (Ar: N2 ratio, total pressure, sputtering power, sputtering time), composition, spectral transmittance, and uniformity of sputtering AlN and AlSiN films were studied. The Kerr rotation angle was up to 1.5° in AlN/TbFeCo/glass and AlSiN/TbFeCo/glass multilayer structures (laser is incident from air). We also studied AlN/TbFeCo/AlN/glass, AlN/TbFeCo/AlN/Al/glass, AlSiN/TbFeCo/AlSiN/glass and multilayer structure films. The results show that AlN and AlSiN films provide sufficient Kerr effect enhancement and superior corrosion resistance improvement to the RE-TM films. The microstructure of those films were also studied by JEM, XRD, and XPS.

  16. Nanobumps: soft quantum dots in InAlN films

    NASA Astrophysics Data System (ADS)

    Romanov, Dmitri; Danylyuk, Yury; Auner, Gregory

    2002-03-01

    Recently, high-quality In_xAl_1-xN films with various values of x have been fabricated on sapphire substrates with a thin AlN sublayer [1]. These films are shown to be monocrystal with low density of crystal defects. AFM studies demonstrate that the film surface contains large number of nanobumps, local elevations of the same scale as the film thickness, i.e., of about 800 Å size. We model the behavior of electrons in such a nanobump structure affected essentially by strong electric field produced by piezoelectric polarization due to lattice mismatches in the system. The electric field effectively traps the electrons in the nanobumps, pushing them toward the tips. Thus, the nanobumps act as quantum dots of a new kind: the electrons can be easily released into interdot space either by optical excitation or just by external electric field (say, in STM configuration). The calculated energy levels of the confined electrons lie in electron-volt range and are in good agreement with the optical absorption data; they explain unusual features below the fundamental absorption edge. We discuss the prospects of electron manipulation in the new system. [1] Yu. Danylyuk, D. Romanov, and G. Auner, GAN and Related Alloys 2001, J.E. Northrup, J. Neugebauer, S.F. Chichibu, D.C. Look, H. Riehert, eds., accepted for publication.

  17. Cell adhesion to cathodic arc plasma deposited CrAlSiN thin films

    NASA Astrophysics Data System (ADS)

    Kim, Sun Kyu; Pham, Vuong-Hung; Kim, Chong-Hyun

    2012-07-01

    Osteoblast cell response (cell adhesion, actin cytoskeleton and focal contact adhesion as well as cell proliferation) to CrN, CrAlSiN and Ti thin films was evaluated in vitro. Cell adhesion and actin stress fibers organization depended on the film composition significantly. Immunofluorescent staining of vinculin in osteoblast cells showed good focal contact adhesion on the CrAlSiN and Ti thin films but not on the CrN thin films. Cell proliferation was significantly greater on the CrAlSiN thin films as well as on Ti thin films than on the CrN thin films.

  18. Reduction of grain size and exchange coupling strength of Nd2Fe14B thin films by Al addition

    NASA Astrophysics Data System (ADS)

    Ma, Y. G.; Yang, Z.; Wei, F. L.; Matsumoto, M.; Morisako, A.; Takei, S.

    2004-07-01

    NdFeB thin films of good perpendicular magnetic anisotropy have been successfully deposited on W underlayer by DC magnetron sputtering. Cu and Al elements are introduced to improve the structural and magnetic properties of the NdFeB films. The deposition temperature is lowered to 400 °C by the addition of 1.0 at.% Cu. The average grain size is reduced to 10 nm by the introduction of 10.0 at.% Al. With the reduction of the grain size, the exchange coupling interaction between the grains is weakened. The magnetization reversal process of the grains directly depends on the grain size and shape. Before Al addition, most of the grains are demagnetized by magnetization incoherent rotation but in the film doped with 5.0 at.% Al, the magnetization is coherently reversed, as demonstrated by the comparison of the physical grain volume and the thermal switching volume.

  19. Mechanisms for Orientation in Low Energy Ion Beam Assisted TiAlN Thin Film Growth

    NASA Astrophysics Data System (ADS)

    Aliotta, Paul V.

    The effects of off-normal ionized vapor bombardment on the orientation and structure of off-normal sputter deposited TiAlN thin films has been investigated with the goal of better understanding the mechanistic pathways in ion beam assisted thin film growth for better control of film properties during deposition. The effects of incident angle for ion bombardment has been investigated as a potential variable during deposition and a comprehensive comparison to current theories of thin film orientation development has been made. It is shown that for low levels of ion energies and rates, films develop (220) orientation with a near amorphous zone 1 (Z1) morphology for low ion incident angles. As the rates and energies of ions increases, (111) orientation and fibrous transition zone (ZT) morphology develops. It is also seen that as the angle of ion bombardment increases the threshold level for rates and energies of ions to cause (111) orientation and ZT morphologies is reduced. This change in orientation and morphology has been shown to change in-situ according to the level of ion bombardment making this transition a potential tool for developing microstructures within thin films. Commonly accepted theories of thin film orientation have been investigated with respect to the development of (111) orientation for low energy ion beam assisted deposition including surface energy reduction, thermal influences, strain energy reduction, ion channeling, and ion damage anisotropy though such mechanisms were not successful in describing the development of (111) orientation. Atomic subplantation, generally regarded as a mechanism for bond formation in diamond-like carbon films, has also been investigated as a potential mechanism for orientation development. By treating the interaction of ions with the depositing film as a collision between ion and surface atom, the transition from (220) to (111) orientation is found to occur when the average energy transferred per atom normal to the

  20. Evolution of Metallic Conductivity in Epitaxial ZnO Thin Films on Systematic Al Doping

    NASA Astrophysics Data System (ADS)

    Chinta, P. V.; Lozano, O.; Wadekar, P. V.; Hsieh, W. C.; Seo, H. W.; Yeh, S. W.; Liao, C. H.; Tu, L. W.; Ho, N. J.; Zhang, Y. S.; Pang, W. Y.; Lo, Ikai; Chen, Q. Y.; Chu, W. K.

    2017-04-01

    The metal-like behaviors and metal-semiconductor transition (MST) of highly conducting Zn1- x Al x O ( x = 1 at.% to 10 at.%) thin films deposited by cosputtering on a-Al2O3 have been investigated. The temperature-dependent transport properties reveal that the Zn1- x Al x O films were highly degenerate. The MST temperature ( T MST) varied from 190 K to 260 K with Al doping from x = 2 at.% to 10 at.%. A simple degenerate band model is used to explain the observed shift in the metal-like behaviors upon Al doping. An empirical approach is used to analyze the resistivity functional below TMST, taking into account the contributions from both the weak localization and Coulomb interactions in explaining the MST. Analysis by least-square fittings of measured data shows excellent agreement. The optical bandgap increases with carrier concentration as n Hall 2/3 , which is interpreted as the Burstein-Moss shift for a nonparabolic effective mass. Such nonparabolicity is scrutinized by quantitative comparisons of the plasma edge values n optical versus the n Hall values.

  1. Evolution of Metallic Conductivity in Epitaxial ZnO Thin Films on Systematic Al Doping

    NASA Astrophysics Data System (ADS)

    Chinta, P. V.; Lozano, O.; Wadekar, P. V.; Hsieh, W. C.; Seo, H. W.; Yeh, S. W.; Liao, C. H.; Tu, L. W.; Ho, N. J.; Zhang, Y. S.; Pang, W. Y.; Lo, Ikai; Chen, Q. Y.; Chu, W. K.

    2016-11-01

    The metal-like behaviors and metal-semiconductor transition (MST) of highly conducting Zn1-x Al x O (x = 1 at.% to 10 at.%) thin films deposited by cosputtering on a-Al2O3 have been investigated. The temperature-dependent transport properties reveal that the Zn1-x Al x O films were highly degenerate. The MST temperature (T MST) varied from 190 K to 260 K with Al doping from x = 2 at.% to 10 at.%. A simple degenerate band model is used to explain the observed shift in the metal-like behaviors upon Al doping. An empirical approach is used to analyze the resistivity functional below TMST, taking into account the contributions from both the weak localization and Coulomb interactions in explaining the MST. Analysis by least-square fittings of measured data shows excellent agreement. The optical bandgap increases with carrier concentration as n {Hall/2/3}, which is interpreted as the Burstein-Moss shift for a nonparabolic effective mass. Such nonparabolicity is scrutinized by quantitative comparisons of the plasma edge values n optical versus the n Hall values.

  2. Structural, optical and electronic structure studies of Al doped ZnO thin films

    NASA Astrophysics Data System (ADS)

    Devi, Vanita; Kumar, Manish; Shukla, D. K.; Choudhary, R. J.; Phase, D. M.; Kumar, Ravindra; Joshi, B. C.

    2015-07-01

    Structural, optical and electronic structure of Al doped ZnO thin films grown using pulsed laser deposition on glass substrate are investigated. X-ray diffraction measurements reveal that all the films are textured along the c-axis and have wurtzite structure. Al doping in ZnO films leads to increase in grain size due to relaxation in compressive stress. Enhancement in band gap of ZnO films with the Al doping is also noticed which can be ascribed to the Brustein-Moss shift. The changes in the electronic structure caused by Al in the doped thin film samples are understood through X-ray absorption measurements.

  3. Enhanced TC in granular and thin film Al-Al2O3 nanostructures

    NASA Astrophysics Data System (ADS)

    Higgins, J. S.; Greene, R. L.

    It is known since the 1970s that the superconducting transition temperature of granular aluminum films can be as high as two to three times the transition temperature of bulk aluminum, depending on the grain size and how strongly the nanometer size grains are connected1,2. As the strength of the grain connectivity becomes increasingly weak, the enhanced TC is suppressed. The mechanism behind this enhancement is still under debate. Recently, work on larger aluminum nanoparticles (18nm) embedded in an insulating Al2O3 matrix showed an onset of the superconducting transition as high as three times that of bulk aluminum3. In this situation, the Al grains are electrically disconnected and in a regime far removed from that of the granular films. Here we compare the two situations through electronic and thermal measurements in order to help elucidate the mechanism behind the enhancements. 1S. Pracht, et al., arXiv:1508.04270v1 [cond-mat.supr-con] (2015). 2G. Deutscher, New Superconductors From Granular to High TC, New Jersey: World Scientific, 2006, p. 72-74. 3V. N. Smolyaninova, et al., Sci. Rep. 5, 15777 (2015). Funding by NSF DMR # 1410665.

  4. Sol-gel derived Al and Ga co-doped ZnO thin films: An optoelectronic study

    NASA Astrophysics Data System (ADS)

    Ebrahimifard, Reza; Golobostanfard, Mohammad Reza; Abdizadeh, Hossein

    2014-01-01

    Al and Ga co-doped ZnO (AGZO) thin films with different doping contents of 0.5-4 at.% were synthesized via sol-gel route using dip coating method and the results were compared to the single doped specimens Al:ZnO (AZO) and Ga:ZnO (GZO). All samples were highly transparent in visible region (T > 85%) with band gap values around 3.3 eV. Introduction of Al and Ga to the ZnO crystal structure decreased the crystallinity and reduced the particle size of the films. Electrical resistivity was investigated and engineered in this study as the main parameter. Single doped samples showed reduction of resistivity compared to the un-doped ZnO. In this regard, Ga was more efficient than Al in decreasing the electrical resistivity. Furthermore, samples with 1 at.% Al and 1 at.% Ga showed the minimum amount of electrical resistivity. Co-doping was performed with two different approaches including variable doping content (Al + Ga ≠ cte) and constant doping content (Al + Ga = 0.5, 1, and 2 at.%) for the sake of the comparison with single doped samples. Samples with Al = 1 at.% and Ga = 1 at.% showed the lowest electrical resistivity in AGZO samples of former approach. However, in latter approach the lowest resistivity was obtained in Al + Ga = 2 at.% sample. The results proved the capability of co-doped samples in optoelectronic industry regarding partially substitution of expensive Ga with Al and obtaining co-doped AGZO transparent conductive thin films with lower resistivity compared to conventional AZO thin films and also achieving commercial advantages compared to costly GZO thin films.

  5. Al-Ti Electrodes for Ferroelectric Thin Films

    NASA Astrophysics Data System (ADS)

    Blanco, Oscar; Heiras, Jesús

    2001-03-01

    We have prepared ferroelectric PZT thin films on silicon substrates with aluminum - titanium layers as bottom electrodes. This type of electrodes were used before and promising results were obtained. However, in order to optimize the ferroelectric properties of the deposited thin films a complete characterization of the electrodes has been undertaken. The Al and Ti layers were deposited by thermal evaporation over Si (111) and (100) substrates. Then the layer were annealed at seven different temperatures in the 300^oC to 600^oC range; the annealing was done in both open and vacuum furnaces. Structure and surface characteristics of the electrodes were determined by X-ray diffraction analysis (XRD), scanning electron microscopy (SEM) and Auger spectroscopy. The electrical properties of the electrodes were also studied. In addition, the structural and dielectric properties of the ferroelectric thin films deposited on these electrodes have been investigated. Thanks are given to I. Gradilla and E. Aparicio for their technical assistance. We gratefully acknowledge the financial support from CONACYT and DGAPA-UNAM.

  6. Effect of Al Doping on Optical Band Gap Energy of Al-TiO2 Thin Films.

    PubMed

    Song, Yo-Seung; Kim, Bae-Yeon; Cho, Nam-Ihn; Lee, Deuk Yong

    2015-07-01

    Al-TiO2 thin films were prepared using a sol-gel derived spin coating by varying the Al/Ti molar ratio from 0 to 0.73 to investigate the effect of Al doping on the optical band gap energy (Eg) of the films. GAXRD results indicated that Al-TiO2 is composed of anatase and FTO phases when the Al/Ti molar ratio was less than 0.18. Above 0.38, no other peaks except FTO were found and transparency of the films was severely deteriorated. Eg of Al-TiO2 decreased from 3.20 eV to 2.07 eV when the Al/Ti ratio was raised from 0 to 0.38. Eg of 2.59 eV was found for the anatase Al-TiO2 films having the Al/Ti ratio of 0.18. The absorption band of Al-TiO2 coatings shifted dramatically from the UV region to the visible region with increasing the amount of Al dopant. The Al doping was mainly attributed to the optical band gap energy of Al-TiO2.

  7. Growth and characterization of AlGaN films on patterned sapphire substrates

    NASA Astrophysics Data System (ADS)

    Kwak, Y. S.; Lee, D. S.; Kim, K. H.; Kim, W. H.; Moon, S. W.

    2011-12-01

    A GaN film and two AlGaN films with Al compositions of 5% and 10% have been grown on the patterned sapphire substrates (PSSs) by metal organic chemical vapor deposition (MOCVD). Optical properties and crystalline qualities of the films have been investigated. The GaN film and the Al0.05Ga0.95N film are almost entirely coalesced except for some point defects. However, the Al0.1Ga0.9N film contains large pits encircled by small pits adjacent to them. The large pits are distributed in the same manner with the PSS arrangement. Dislocations and inversion domain boundaries were also observed in the Al0.1Ga0.9N film.

  8. Influence of Content of Al2O3 on Structure and Properties of Nanocomposite Nb-B-Al-O films.

    PubMed

    Liu, Na; Dong, Lei; Dong, Lei; Yu, Jiangang; Pan, Yupeng; Wan, Rongxin; Gu, Hanqing; Li, Dejun

    2015-12-01

    Nb-B-Al-O nanocomposite films with different power of Al2O3 were successfully deposited on the Si substrate via multi-target magnetron co-sputtering method. The influences of Al2O3's content on structure and properties of obtained nanocomposite films through controlling Al2O3's power were investigated. Increasing the power of Al2O3 can influence the bombarding energy and cause the momentum transfer of NbB2. This can lead to the decreasing content of Al2O3. Furthermore, the whole films showed monocrystalline NbB2's (100) phase, and Al2O3 shaded from amorphous to weak cubic-crystalline when decreasing content of Al2O3. This structure and content changes were proof by X-ray diffraction (XRD) and high-resolution transmission electron microscopy (TEM) and X-ray photoelectron spectroscopy (XPS). When NbB2 grains were far from each other in lower power of Al2O3, the whole films showed a typical nanocomposite microstructure with crystalline NbB2 grains embedded in a matrix of an amorphous Al2O3 phase. Continuing increasing the power of Al2O3, the less content of Al2O3 tended to cause crystalline of cubic-Al2O3 between the close distances of different crystalline NbB2 grains. The appearance of cubic-crystallization Al2O3 can help to raise the nanocomposite films' mechanical properties to some extent. The maximum hardness and elastic modulus were up to 21.60 and 332.78 GPa, which were higher than the NbB2 and amorphous Al2O3 monolithic films. Furthermore, this structure change made the chemistry bond of O atom change from the existence of O-Nb, O-B, and O-Al bonds to single O-Al bond and increased the specific value of Al and O. It also influenced the hardness in higher temperature, which made the hardness variation of different Al2O3 content reduced. These results revealed that it can enhance the films' oxidation resistance properties and keep the mechanical properties at high temperature. The study highlighted the importance of controlling the Al2O3's content to prepare

  9. Comparison of Tribological Properties of NiAl Matrix Composites Containing Graphite, Carbon Nanotubes, or Graphene

    NASA Astrophysics Data System (ADS)

    Xu, Zengshi; Zhang, Qiaoxin; Shi, Xiaoliang; Zhai, Wenzheng; Zhu, Qingshuai

    2015-05-01

    To better understand respective lubrication effects and mechanisms of graphite, multi-walled carbon nanotubes (MWNTs), and multilayer graphene (MLG), comparison of tribological properties of NiAl matrix composites (NAMC) containing graphite, MWNTs, or MLG is investigated. Tribological results clearly indicate that the incorporation of solid lubricant remarkably improves the tribological properties of NAMC. NAMC containing MWNTs have better tribological properties than that containing graphite. NAMC containing MLG have the best tribological properties. EPMA, AFM, and FESEM analyses of worn surfaces suggest that the discontinuous island-like solid lubricant-rich films with different compacting extent forms on the worn surfaces of NAMC containing solid lubricant. The worn surface of NAM shows the slighter delamination and comparatively more compact films than that of NAC; in contrast, the worn surface of NAG presents the slightest delamination and the most compact films. It is concluded that graphite, MWNTs, and MLG indeed possess different lubrication effects and mechanisms.

  10. Effect of AC target power on AlN film quality

    SciTech Connect

    Knisely, Katherine Grosh, Karl

    2014-09-01

    The influence of alternating current (AC) target power on film stress, roughness, and x-ray diffraction rocking curve full width half maximum (FWHM) was examined for AlN films deposited using S-gun magnetron sputtering on insulative substrates consisting of Si wafers with 575 nm thermal oxide. As the AC target power was increased from 5 to 8 kW, the deposition rate increased from 9.3 to 15.9 A/s, film stress decreased from 81 to −170 MPa, and the rocking curve FWHM increased from 0.98 to 1.03°. AlN film behavior is observed to change with target life; films deposited at 200 kWh target life were approximately 40 MPa more compressive and had 0.02° degree higher rocking curve FWHM values than films deposited at 130 kWh. AlN films deposited in two depositions were compared with films deposited in a single deposition, in order to better characterize the growth behavior and properties of AlN films deposited on an existing AlN film, which is not well understood. Two deposition films, when compared with single deposition films, showed no variation in residual stress trends or grain size behavior, but the average film roughness increased from 0.7 to 1.4 nm and rocking curve FWHM values increased by more than 0.25°.

  11. Energy dissipation of highly charged ions on Al oxide films.

    PubMed

    Lake, R E; Pomeroy, J M; Sosolik, C E

    2010-03-03

    Slow highly charged ions (HCIs) carry a large amount of potential energy that can be dissipated within femtoseconds upon interaction with a surface. HCI-insulator collisions result in high sputter yields and surface nanofeature creation due to strong coupling between the solid's electronic system and lattice. For HCIs interacting with Al oxide, combined experiments and theory indicate that defect mediated desorption can explain reasonably well preferential O atom removal and an observed threshold for sputtering due to potential energy. These studies have relied on measuring mass loss on the target substrate or probing craters left after desorption. Our approach is to extract highly charged ions onto the Al oxide barriers of metal-insulator-metal tunnel junctions and measure the increased conductance in a finished device after the irradiated interface is buried under the top metal layer. Such transport measurements constrain dynamic surface processes and provide large sets of statistics concerning the way individual HCI projectiles dissipate their potential energy. Results for Xe(q +) for q = 32, 40, 44 extracted onto Al oxide films are discussed in terms of postirradiation electrical device characteristics. Future work will elucidate the relationship between potential energy dissipation and tunneling phenomena through HCI modified oxides.

  12. Optical properties of Al-CdO nano-clusters thin films

    NASA Astrophysics Data System (ADS)

    Yahia, I. S.; Salem, G. F.; Abd El-sadek, M. S.; Yakuphanoglu, F.

    2013-12-01

    The aluminum doped cadmium oxide (CdO:Al) thin films were grown onto glass substrates by sol-gel spin-coating method. The structural properties of undoped and Al-doped CdO thin films were studied by atomic force microscopy. AFM results reveal that the studied CdO films were formed from the nano-clusters. The optical transmittance of undoped and Al-doped CdO is decreased with increasing Al contents. The optical band gaps of the CdO films were varied from 2.54 eV to 2.32 eV with increasing Al dopants. The width of localized states in the optical band gap of the films is increased with increasing Al content. The improvement of the optical constant of Al-doped CdO has potential applications as transparent conducting oxide for different optoelectronic device applications.

  13. Vanadium dioxide film protected with an atomic-layer-deposited Al{sub 2}O{sub 3} thin film

    SciTech Connect

    Wang, Xiao; Cao, Yunzhen Yang, Chao; Yan, Lu; Li, Ying

    2016-01-15

    A VO{sub 2} film exposed to ambient air is prone to oxidation, which will degrade its thermochromic properties. In this work, the authors deposited an ultrathin Al{sub 2}O{sub 3} film with atomic layer deposition (ALD) to protect the underlying VO{sub 2} film from degradation, and then studied the morphology and crystalline structure of the films. To assess the protectiveness of the Al{sub 2}O{sub 3} capping layer, the authors performed a heating test and a damp heating test. An ultrathin 5-nm-thick ALD Al{sub 2}O{sub 3} film was sufficient to protect the underlying VO{sub 2} film heated at 350 °C. However, in a humid environment at prolonged durations, a thicker ALD Al{sub 2}O{sub 3} film (15 nm) was required to protect the VO{sub 2}. The authors also deposited and studied a TiO{sub 2}/Al{sub 2}O{sub 3} bilayer, which significantly improved the protectiveness of the Al{sub 2}O{sub 3} film in a humid environment.

  14. Process for producing Ti-Cr-Al-O thin film resistors

    DOEpatents

    Jankowski, Alan F.; Schmid, Anthony P.

    2001-01-01

    Thin films of Ti-Cr-Al-O are used as a resistor material. The films are rf sputter deposited from ceramic targets using a reactive working gas mixture of Ar and O.sub.2. Resistivity values from 10.sup.4 to 10.sup.10 Ohm-cm have been measured for Ti-Cr-Al-O film <1 .mu.m thick. The film resistivity can be discretely selected through control of the target composition and the deposition parameters. The application of Ti-Cr-Al-O as a thin film resistor has been found to be thermodynamically stable, unlike other metal-oxide films. The Ti-Cr-Al-O film can be used as a vertical or lateral resistor, for example, as a layer beneath a field emission cathode in a flat panel display; or used to control surface emissivity, for example, as a coating on an insulating material such as vertical wall supports in flat panel displays.

  15. Flat panel display using Ti-Cr-Al-O thin film

    DOEpatents

    Jankowski, Alan F.; Schmid, Anthony P.

    2002-01-01

    Thin films of Ti--Cr--Al--O are used as a resistor material. The films are rf sputter deposited from ceramic targets using a reactive working gas mixture of Ar and O.sub.2. Resistivity values from 10.sup.4 to 10.sup.10 Ohm-cm have been measured for Ti--Cr--Al--O film <1 .mu.m thick. The film resistivity can be discretely selected through control of the target composition and the deposition parameters. The application of Ti--Cr--Al--O as a thin film resistor has been found to be thermodynamically stable, unlike other metal-oxide films. The Ti--Cr--Al--O film can be used as a vertical or lateral resistor, for example, as a layer beneath a field emission cathode in a flat panel display; or used to control surface emissivity, for example, as a coating on an insulating material such as vertical wall supports in flat panel displays.

  16. Characterization of Al2O3 optically stimulated luminescence films for 2D dosimetry using a 6 MV photon beam

    NASA Astrophysics Data System (ADS)

    Ahmed, M. F.; Shrestha, N.; Schnell, E.; Ahmad, S.; Akselrod, M. S.; Yukihara, E. G.

    2016-11-01

    This work evaluates the dosimetric properties of newly developed optically stimulated luminescence (OSL) films, fabricated with either Al2O3:C or Al2O3:C,Mg, using a prototype laser scanning reader, a developed image reconstruction algorithm, and a 6 MV therapeutic photon beam. Packages containing OSL films (Al2O3:C and Al2O3:C,Mg) and a radiochromic film (Gafchromic EBT3) were irradiated using a 6 MV photon beam using different doses, field sizes, with and without wedge filter. Dependence on film orientation of the OSL system was also tested. Diode-array (MapCHECK) and ionization chamber measurements were performed for comparison. The OSLD film doses agreed with the MapCHECK and ionization chamber data within the experimental uncertainties (<2% at 1.5 Gy). The system background and minimum detectable dose (MDD) were  <0.5 mGy, and the dose response was approximately linear from the MDD up to a few grays (the linearity correction was  <10% up to ~2-4 Gy), with no saturation up to 30 Gy. The dose profiles agreed with those obtained using EBT3 films (analyzed using the triple channel method) in the high dose regions of the images. In the low dose regions, the dose profiles from the OSLD films were more reproducible than those from the EBT3 films. We also demonstrated that the OSL film data are independent on scan orientation and field size over the investigated range. The results demonstrate the potential of OSLD films for 2D dosimetry, particularly for the characterization of small fields, due to their wide dynamic range, linear response, resolution and dosimetric properties. The negligible background and potential simple calibration make these OSLD films suitable for remote audits. The characterization presented here may motivate further commercial development of a 2D dosimetry system based on the OSL from Al2O3:C or Al2O3:C,Mg.

  17. Plasma dynamics and cations off-stoichiometry in LaAlO3 films grown in high pressures regimes

    NASA Astrophysics Data System (ADS)

    Sambri, A.; Khare, Amit; Mirabella, S.; Di Gennaro, E.; Safeen, Akif; Di Capua, F.; Campajola, L.; Scotti di Uccio, U.; Amoruso, S.; Miletto Granozio, F.

    2016-12-01

    The indirect effect of oxygen background gas on the La/Al ratio during the growth of LaAlO3 (LAO) films by pulsed laser deposition (PLD) is analyzed, in a pressure range between 10-3 and 10-1 mbar. We resort to two complementary investigation methods: Rutherford backscattering spectroscopy and spectrally resolved, time-gated imaging of the laser plume. The first technique allows us to analyze the stoichiometry of the deposited films, and the latter allows us to analyze the plume expansion phase of the PLD process by collecting chemically resolved two-dimensional images of the relevant atomic/molecular species. The comparison between the results obtained by the two techniques allows us to highlight the role of the plume-gas interaction in affecting cations stoichiometry. Our results indicate that, in the considered pressure range, the background oxygen pressure affects the cations stoichiometry of the LAO films, besides determining their oxygen content.

  18. Preparation of γ-Al2O3 films by laser chemical vapor deposition

    NASA Astrophysics Data System (ADS)

    Gao, Ming; Ito, Akihiko; Goto, Takashi

    2015-06-01

    γ- and α-Al2O3 films were prepared by chemical vapor deposition using CO2, Nd:YAG, and InGaAs lasers to investigate the effects of varying the laser wavelength and deposition conditions on the phase composition and microstructure. The CO2 laser was found to mostly produce α-Al2O3 films, whereas the Nd:YAG and InGaAs lasers produced γ-Al2O3 films when used at a high total pressure. γ-Al2O3 films had a cauliflower-like structure, while the α-Al2O3 films had a dense and columnar structure. Of the three lasers, it was the Nd:YAG laser that interacted most with intermediate gas species. This promoted γ-Al2O3 nucleation in the gas phase at high total pressure, which explains the cauliflower-like structure of nanoparticles observed.

  19. Growth evolution of AlN films on silicon (111) substrates by pulsed laser deposition

    SciTech Connect

    Wang, Haiyan; Wang, Wenliang; Yang, Weijia; Zhou, Shizhong; Lin, Zhiting; Li, Guoqiang

    2015-05-14

    AlN films with various thicknesses have been grown on Si(111) substrates by pulsed laser deposition (PLD). The surface morphology and structural property of the as-grown AlN films have been investigated carefully to comprehensively explore the epitaxial behavior. The ∼2 nm-thick AlN film initially grown on Si substrate exhibits an atomically flat surface with a root-mean-square surface roughness of 0.23 nm. As the thickness increases, AlN grains gradually grow larger, causing a relatively rough surface. The surface morphology of ∼120 nm-thick AlN film indicates that AlN islands coalesce together and eventually form AlN layers. The decreasing growth rate from 240 to 180 nm/h is a direct evidence that the growth mode of AlN films grown on Si substrates by PLD changes from the islands growth to the layer growth. The evolution of AlN films throughout the growth is studied deeply, and its corresponding growth mechanism is hence proposed. These results are instructional for the growth of high-quality nitride films on Si substrates by PLD, and of great interest for the fabrication of AlN-based devices.

  20. Hard α-Al2O3 Film Coating on Industrial Roller Using Aerosol Deposition Method

    NASA Astrophysics Data System (ADS)

    Seto, Naoki; Endo, Kazuteru; Sakamoto, Nobuo; Hirose, Shingo; Akedo, Jun

    2014-12-01

    It is well known that α-Al2O3 forms very hard, highly insulating, smooth films. There is demand for the use of such films instead of conventional hard, smooth films; For example, industrial rollers such as calendering rollers etc. are always required to have a harder and smoother surface than conventional rollers. Therefore, this work investigated the specification of α-Al2O3 films, e.g., their wear resistance and chemical stability, using various tests. This paper also discusses whether α-Al2O3 film can take the place of Cr plating film as a hard, smooth film by comparing their wear resistance and chemical stability.

  1. Interfacial development of electrophoretically deposited graphene oxide films on Al alloys

    DOE PAGES

    Jin, Sumin; Dickerson, James H.; Pham, Viet Hung; ...

    2015-07-28

    Adhesion between film and substrate is critical for electronic device and coating applications. Interfacial development between electrophoretically deposited graphene oxide films on Al 1100 and Al 5052 alloys were investigated using FT-IR and XPS depth profiling techniques. Obtained results suggest metal ion permeation from the substrates into deposited graphene oxide films. The interface between the films and the substrates were primarily composed of Al-O-C bonds from oxygenated defects on graphene oxide plane rather than expected Al-C formation. Films heat treated at 150 °C had change in microstructure and peak shifts in XPS spectra suggesting change in chemical structure of bondsmore » between the films and the substrates.« less

  2. Interfacial development of electrophoretically deposited graphene oxide films on Al alloys

    SciTech Connect

    Jin, Sumin; Dickerson, James H.; Pham, Viet Hung; Brochu, Mathieu

    2015-07-28

    Adhesion between film and substrate is critical for electronic device and coating applications. Interfacial development between electrophoretically deposited graphene oxide films on Al 1100 and Al 5052 alloys were investigated using FT-IR and XPS depth profiling techniques. Obtained results suggest metal ion permeation from the substrates into deposited graphene oxide films. The interface between the films and the substrates were primarily composed of Al-O-C bonds from oxygenated defects on graphene oxide plane rather than expected Al-C formation. Films heat treated at 150 °C had change in microstructure and peak shifts in XPS spectra suggesting change in chemical structure of bonds between the films and the substrates.

  3. Properties of Cr2AlC MAX phase thin films prepared by reactive magnetron sputtering

    NASA Astrophysics Data System (ADS)

    Buck, Zachary; Donato, Tyler; Rotella, Christopher; Lunk, Carl; Lofland, S. E.; Hettinger, J. D.

    2012-02-01

    Mn+ 1AXn (MAX) phases, where n is 1, 2, and 3, M is an early transition metal, A is an A-group element, and X is either C or N, are ternary carbides with unique properties such as low density, easy machinability, and good oxidation resistance. The MAX phase Cr2AlC is of particular interest for industrial applications to its excellent high-temperature oxidation resistance and relatively low synthesis temperature. We prepared Cr2AlC thin films on c-axis oriented single crystal Al2O3, glassy carbon and Si thermal oxide substrates using reactive magnetron sputtering as precursor materials for carbide-derived carbon (CDC) films for ``on-chip'' supercapacitors. Film deposition was optimized using elemental composition data obtained by WDXRF. Optimized films were characterized using XRD and scanning electron microscopy. It was found that textured Cr2AlC films only form when the composition was Al-rich allowing the formation of a Cr5Al8 interfacial layer. As film composition was optimized, the interfacial layer did not form but the XRD peaks associated with the Cr2AlC also decreased in magnitude. Extremely high-textured films were grown when a thin buffer layer of CrAl2 was deposited on the substrate before depositing the Cr2AlC films. This result suggests that Cr2AlC films may not be ideal for CDC applications since the films may ``lift-off'' during conversion due to the existence of the naturally occurring buffer-layer.

  4. Improved performances of AlN/polyimide hybrid film and its application in redistribution layer

    NASA Astrophysics Data System (ADS)

    Liu, Zhe; Ding, Guifu; Luo, Jiangbo; Lu, Wen; Zhao, Xiaolin; Cheng, Ping; Wang, Yanlei

    2016-09-01

    The AlN/polyimide (PI) hybrid film was studied as the dielectric layer in the redistribution layer (RDL) in this work. The incorporation of the AlN into the PI matrix was achieved by mechanical ball-milling process. The spin-coating process was used to fabricate the AlN/PI hybrid film, which is compatible with micro-electro-mechanical system (MEMS) technology for fabricating RDL. The AlN/PI hybrid film was characterized by Fourier transform infrared (FTIR) spectrum and thermogravimetric analysis (TGA). The effect of the AlN content on the thermal stability, thermal expansion coefficient, hardness and water adsorption of the AlN/PI hybrid film was studied. The results indicated that the addition of AlN nanoparticles improved the thermal stability and hardness, but decreased the thermal expansion coefficient and water absorption of the pure PI film. As an example of its typical application, the AlN/PI hybrid film with 8 wt.% AlN was patterned using micromachining technology and used as the dielectric layer in RDL successfully.

  5. Annealing effect of double dip coated ZnAl2O4 thin films

    NASA Astrophysics Data System (ADS)

    Chandramohan, R.; Dhanasekaran, V.; Sundaram, K.; Mahalingam, T.

    2013-02-01

    Thin films of ZnAl2O4 were prepared by dip technique involving chemical solutions. Investigations on the effect of post heat treatment on the structural, optical properties of ZnAl2O4 thin films were studied and reported. Xray diffraction patterns revealed that the thin films are polycrystalline cubic structure of ZnAl2O4. The microstructural properties of ZnAl2O4 thin films were calculated and crystallite size tends to increase with increase of annealing temperatures. The texture coefficients have been evaluated and found to be greater than unity revealing high texturing of the architecture of the film. The optical band gap values were found to be in the range of 3.48 - 3.62 eV. The n and k were found to decrease with increase of post annealing temperature. The SEM revealed the uniform distribution of spherical grains.

  6. Optical characterization of Sol-Gel ZnO:Al thin films

    NASA Astrophysics Data System (ADS)

    Ivanova, T.; Harizanova, A.; Koutzarova, T.; Vertruyen, B.

    2016-03-01

    This paper presents a sol-gel technological process for preparing thin films of ZnO and ZnO:Al. The effect of annealing treatments (500, 600, 700 and 800 °C) on their properties was studied. The structural evolution with the temperature was investigated by using X-Ray diffraction (XRD). Fourier Transform Infrared (FTIR) and UV-VIS spectrophotometry were applied to characterizing the films' vibrational and optical properties. The ZnO and ZnO:Al films possessed a polycrystalline structure. The films studied are highly transparent in the visible spectral range. The optical band gap values and the haze parameter were also determined.

  7. Photoluminescence and its time evolution of AlN thin films

    NASA Astrophysics Data System (ADS)

    Sun, Jian; Wu, Jiada; Ling, Hao; Shi, Wei; Ying, Zhifeng; Li, Fuming

    2001-03-01

    We report the room temperature photoluminescence measurements of AlN thin films stimulated by above-band-gap pulsed light excitation. Two AlN thin films with different composition and structure were studied. One AlN film, prepared by pulsed laser deposition from sintered aluminum nitride ceramic target, contains oxide impurities. The other one, prepared by plasma assisted reactive pulsed laser deposition from pure aluminum metal target, is composed of pure AlN compound. Upon the irradiation of the samples by 193 nm excimer laser pulses, both the as-grown AlN thin films luminesce in the ultraviolet and the green regions, peaked at 440 and 400 nm, respectively. We also examined the time evolution of the luminescence and found that the entire broad luminescence band decays non-exponentially at approximately the same rate.

  8. Magnetism and magnetoresistance from different origins in Co/ZnO:Al granular films

    NASA Astrophysics Data System (ADS)

    Quan, Zhiyong; Liu, Xia; Song, Zhilin; Xu, Xiaohong

    2016-12-01

    Co/ZnO:Al granular films were made on glass substrates by sequential magnetron sputter deposition of ultrathin Co layer and ZnO:Al layer at room temperature. The as-deposited films consist of superparamagnetic Co particles dispersed in ZnO:Al ( 2% Al) semiconductor matrix. Distinguished magnetoresistance effect at room temperature was obtained in the as-deposited films, which obviously reduced after annealing due to the growth of Co particles. The size of important magnetic particles was analyzed by Langevin function for hysteresis loops and magnetoresistance curves at room temperature. It was found that small magnetic particle contribute to magnetoresistance behavior and large particles dominate the room temperature magnetism in Co/ZnO:Al granular films.

  9. Thermally Diffused Al:ZnO Thin Films for Broadband Transparent Conductor.

    PubMed

    Tong, Chong; Yun, Juhyung; Chen, Yen-Jen; Ji, Dengxin; Gan, Qiaoqiang; Anderson, Wayne A

    2016-02-17

    Here, we report an approach to realize highly transparent low resistance Al-doped ZnO (AZO) films for broadband transparent conductors. Thin Al films are deposited on ZnO surfaces, followed by thermal diffusion processes, introducing the Al doping into ZnO thin films. By utilizing the interdiffusion of Al, Zn, and O, the chemical state of Al on the surfaces can be converted to a fully oxidized state, resulting in a low sheet resistance of 6.2 Ω/sq and an excellent transparency (i.e., 96.5% at 550 nm and higher than 85% up to 2500 nm), which is superior compared with some previously reported values for indium tin oxide, solution processed AZO, and many transparent conducting materials using novel nanostructures. Such AZO films are also applied as transparent conducting layers for AZO/Si heterojunction solar cells, demonstrating their applications in optoelectronic devices.

  10. Highly transparent and conductive ZnO:Al thin films prepared by vacuum arc plasma evaporation

    NASA Astrophysics Data System (ADS)

    Miyata, Toshihiro; Minamino, Youhei; Ida, Satoshi; Minami, Tadatsugu

    2004-07-01

    A vacuum arc plasma evaporation (VAPE) method using both oxide fragments and gas sources as the source materials is demonstrated to be very effective for the preparation of multicomponent oxide thin films. Highly transparent and conductive Al-doped ZnO (AZO) thin films were prepared by the VAPE method using a ZnO fragment target and a gas source Al dopant, aluminum acethylacetonate (Al(C5H7O2)3) contained in a stainless steel vessel. The Al content in the AZO films was altered by controlling the partial pressure (or flow rate) of the Al dopant gas. High deposition rates as well as uniform distributions of resistivity and thickness on the substrate surface were obtained on large area glass substrates. A low resistivity on the order of 10-4 Ω cm and an average transmittance above 80% in the visible range were obtained in AZO thin films deposited on glass substrates. .

  11. A structural and calorimetric study of the transformations in sputtered Al-Mn and Al-Mn-Si films

    SciTech Connect

    Chen, L.C.; Spaepen, F. ); Robertson, J.L.; Moss, S.C. ); Hiraga, K. )

    1990-09-01

    Scanning and isothermal calorimetry, together with x-ray diffraction and high resolution transmission electron microscopy (TEM), have been used to characterize Al-Mn and Al-Mn-Si films sputtered onto substrates at 60 {degree}C, 45 {degree}C, and {minus}100 {degree}C. In the case of Al{sub 0.83}Mn{sub 0.17}, the monotonically decreasing isothermal calorimetric signal, characteristic of a grain growth process, has proved decisive in identifying the as-sputtered amorphous'' state as microquasicrystalline, with an average grain size of {similar to}20 A in agreement with an estimate of correlation range from the x-ray pattern. The TEM at 400 keV reveals well-defined atomic or lattice images in annealed films but only barely resolved grains (ordered clusters) in the as-sputtered films. The relation between the metallic glass and the microquasicrystalline state in these alloys is discussed.

  12. Synthesis of anodizing composite films containing superfine Al 2O 3 and PTFE particles on Al alloys

    NASA Astrophysics Data System (ADS)

    Chen, Suiyuan; Kang, Chen; Wang, Jing; Liu, Changsheng; Sun, Kai

    2010-09-01

    Anodized composite films containing superfine Al 2O 3 and PTFE particles were prepared on 2024 Al alloy using an anodizing method. The microstructures and properties of the films were studied by scanning electron microscopy, optical microscopy and X-ray diffraction. Friction wear tests were performed to evaluate the mechanical properties of the composites. Results indicate that the composite films with reinforced Al 2O 3 and PTFE two-particles have reduced friction coefficients and relatively high microhardness. The friction coefficient can be as small as 0.15, which is much smaller than that of an oxide film prepared under the same conditions but without adding any particles (0.25), while the microhardness can reach as high as 404 HV. When rubbed at room temperature for 20 min during dry sliding friction tests, the wear loss of the film was about 16 mg, which is about the half of that of the samples without added particles. The synthesized composite films that have good anti-wear and self-lubricating properties are desirable for oil-free industrial machinery applications.

  13. Crystallization Kinetics Study on Magnetron-Sputtered Amorphous TiAl Alloy Thin Films

    NASA Astrophysics Data System (ADS)

    Shui, Lu-Yu; Yan, Biao

    2014-04-01

    Crystallization kinetics of magnetron-sputtered amorphous TiAl alloy thin films is investigated by differential scanning calorimetry through isothermal analysis and non-isothermal analysis. In non-isothermal analysis, the Kissinger method and the Ozawa method are used to calculate the apparent activation energy and local activation energy, respectively, in the crystallization processes of amorphous TiAl thin films. Furthermore, the crystallization mechanism is discussed from the investigation of the Avrami exponent by isothermal analysis. In addition, x-ray diffraction is utilized to reveal the grain orientation and evolution during the crystallization of TiAl thin films.

  14. Deposition and Characterization of Al:ZnO Thin Films for Optoelectronic Applications

    NASA Astrophysics Data System (ADS)

    Pandey, R. K.; Mishra, Swati; Bajpai, P. K.

    2016-11-01

    Transparent aluminum-doped zinc oxide (Al:ZnO) thin films have been successfully synthesized on silicon substrates at room temperature using a sol-gel spin-coating method. The structural and optical properties and surface morphology of the synthesized films were characterized using x-ray diffraction (XRD) analysis, ultraviolet-visible (UV-Vis) spectroscopy, Fourier-transform infrared (FTIR) spectroscopy, micro-Raman spectroscopy, and atomic force microscopy (AFM). The prepared Al:ZnO retained the hexagonal wurtzite structure of ZnO. FTIR and Raman spectra clearly revealed a major peak at 437 cm-1, associated with the ZnO bond. UV-Vis spectra showed that the Al:ZnO films were transparent from the near-ultraviolet to near-infrared region. The effect of film thickness on the physical and optical properties of the Al:ZnO thin films for 2.0 at.% aluminum concentration was investigated. Measurements revealed that the film transparency, optical energy bandgap, Urbach energy, extinction coefficient, and porosity varied with the film thickness. The energy bandgap values for the prepared thin films increased in the range of 3.18 eV to 3.2 eV with increasing film thickness.

  15. Deposition of ultrathin AlN films for high frequency electroacoustic devices

    SciTech Connect

    Felmetsger, Valery V.; Laptev, Pavel N.; Graham, Roger J.

    2011-03-15

    The authors investigate the microstructure, crystal orientation, and residual stress of reactively sputtered aluminum nitride (AlN) films having thicknesses as low as 200 down to 25 nm. A two-step deposition process by the dual cathode ac (40 kHz) powered S-gun magnetron enabling better conditions for AlN nucleation on the surface of the molybdenum (Mo) bottom electrode was developed to enhance crystallinity of ultrathin AlN films. Using the two-step process, the residual in-plane stress as well as the stress gradient through the film thickness can be effectively controlled. X-ray rocking curve measurements have shown that ultrathin films grown on Mo using this technology are highly c-axis oriented with full widths at half maximum of 1.8 deg. and 3.1 deg. for 200- and 25-nm-thick films, respectively, which are equal to or even better than the results previously reported for relatively thick AlN films. High-resolution transmission electron microscopy and fast Fourier transform analyses have confirmed strong grain orientation in 25-100-nm-thick films. A fine columnar texture and a continuous lattice microstructure within a single grain from the interface with the Mo substrate through to the AlN surface have been elicited even in the 25-nm-thick film.

  16. Structural and surface analysis of AlInN thin films synthesized by elemental stacks annealing

    NASA Astrophysics Data System (ADS)

    Afzal, Naveed; Devarajan, Mutharasu; Subramani, Shanmugan; Ibrahim, Kamarulazizi

    2014-04-01

    This paper presents the synthesis of AlInN thin films on Si (100) substrates using elemental stacks annealing (ESA) process. Single stack InN films were grown on Si (100) substrates by reactive radiofrequency (RF) magnetron sputtering using pure indium target in Ar-N2 environment and then an Al stack layer was deposited on the InN films by direct current (dc) sputtering of pure aluminum target in Ar atmosphere at room temperature. Annealing of the deposited films was carried out at 400 °C for 2, 4 and 6 h in a tube furnace under N2 atmosphere. X-ray diffraction (XRD) results reveal that annealing for 2 h does not produce a well-defined AlInN film, however, with the increase of annealing time to 4 h and to 6 h, (002) and (103) oriented highly crystalline AlInN films are formed with wurtzite structures. Field emission scanning electron microscopy (FESEM) results indicate a uniform film structure with grains growth by increasing the annealing time. Energy dispersive x-ray (EDX) analysis shows higher Al (atomic %) in the film as compared to In and N. Atomic force microscopy (AFM) results show a decrease in the surface roughness with increase of the annealing time.

  17. The Structural, optical and electrical properties of nanocrystalline ZnO:Al thin films

    NASA Astrophysics Data System (ADS)

    Benhaoua, Boubaker; Rahal, Achour; Benramache, Said

    2014-04-01

    The Al doped ZnO thin films were deposited by ultrasonic spray technique. The influence of Al doping on structural, optical and electrical properties of the ZnO thin films was studied. A set of Al doped ZnO (0-3.5 wt.%) were deposited at 350 °C. Nanocrystalline films with a hexagonal wurtzite structure with a strong (0 0 2) preferred orientation were observed after Al doping. The maximum value of grain size (33.28 nm) is attained with Al doped ZnO at 3 wt.%. Texture coefficient TC(h k l) of the four major peaks where evaluated. Optically, in visible region the transmissions spectra T(λ) show that the whole doped films exhibit lower values than the non doped one which has as transmittance more than 80%; whereas in the same region the optical transmissions of the doped films are affected by the doping ration. The band gap (Eg) increased after doping from 3.267 to 3.325 eV with increasing concentration of doping from 0 to 2.75 wt.%, respectively, according to the Burstein-Moss effect (blue shift of Eg) then beyond 3 wt.% in doping the band gap exhibit a slight decreasing due to the coexistence of Roth and Burstein-Moss effect. The electrical resistivity of the films decreased from 20 to 5.26 (Ω cm). The best results are achieved with 2.75 wt.% Al doped ZnO film.

  18. Role of Grain Boundaries in the Mechanism of Plasma Hydrogenation of Nanocrystalline MgAl Films

    SciTech Connect

    Milcius, Darius; Pranevicius, Liudas; Templier, Claude; Bobrovaite, Birute; Barnackas, Irmantas

    2006-05-24

    Nanocrystalline aluminum hydrides (alanates) are potential hydrogen storage materials for PEM fuel cell applications. One of candidates is magnesium alanate, Mg(AlH4)2, which contains 9.3 wt. % of hydrogen. In the present work, the effects of Ti catalyst in improving the kinetics of hydrogen uptake and release are investigated. The 2-5 {mu}m thick MgAl films have been hydrogenated employing plasma immersion ion implantation technique as a function of Ti-content. Nanocrystalline MgAl films were prepared by magnetron sputter deposition in vacuum. Titanium atoms were incorporated simultaneously into the growing film. Morphological and structural properties were studied by scanning electron and atomic force microcopies and X-ray diffraction technique. It is shown that the microstructure of the hydrided/dehydrided MgAl film is highly defected and demonstrates dispersed/amorphous cluster-like structure. Ti atoms in MgAl film kinetically enhance the dehydrogenation of magnesium alanate film. For Ti-doped MgAl film the dehydrogenation process becomes about 1.5 times shorter and the dehydrogenation temperature about 50 K less than for Ti-undoped film for the temperature rise rate equal to 18 K-min-1. It is shown when hydrogenated MgAl film is exposed to air a compact amorphous Al2O3 layer with typically 3-5 nm thickness grows on the surface. Thin native oxide acts as a permeation barrier for hydrogen. It has been found that the major part of hydrogen effuses at {approx}630 K and the effusion process is controlled by the migration of hydrogen through the surface oxide layer.

  19. Atomic layer deposition of Al-doped ZnO thin films

    SciTech Connect

    Tynell, Tommi; Yamauchi, Hisao; Karppinen, Maarit; Okazaki, Ryuji; Terasaki, Ichiro

    2013-01-15

    Atomic layer deposition has been used to fabricate thin films of aluminum-doped ZnO by depositing interspersed layers of ZnO and Al{sub 2}O{sub 3} on borosilicate glass substrates. The growth characteristics of the films have been investigated through x-ray diffraction, x-ray reflection, and x-ray fluorescence measurements, and the efficacy of the Al doping has been evaluated through optical reflectivity and Seebeck coefficient measurements. The Al doping is found to affect the carrier density of ZnO up to a nominal Al dopant content of 5 at. %. At nominal Al doping levels of 10 at. % and higher, the structure of the films is found to be strongly affected by the Al{sub 2}O{sub 3} phase and no further carrier doping of ZnO is observed.

  20. Simultaneous enhancement of carrier mobility and concentration via tailoring of Al-chemical states in Al-ZnO thin films

    SciTech Connect

    Kumar, Manish Wen, Long; Sahu, Bibhuti B.; Han, Jeon Geon

    2015-06-15

    Simultaneously achieving higher carriers concentration and mobility is a technical challenge against up-scaling the transparent-conductive performances of transparent-conductive oxides. Utilizing one order higher dense (∼1 × 10{sup 11} cm{sup −3}) plasmas (in comparison to the conventional direct current plasmas), highly c-axis oriented Al-doped ZnO films have been prepared with precise control over relative composition and chemical states of constituting elements. Tailoring of intrinsic (O vacancies) and extrinsic (ionic Al and zero-valent Al) dopants provide simultaneous enhancement in mobility and concentration of charge carriers. Room-temperature resistivity as low as 4.89 × 10{sup −4} Ω cm along the carrier concentration 5.6 × 10{sup 20} cm{sup −3} is obtained in 200 nm thick transparent films. Here, the control of atomic Al reduces the charge trapping at grain boundaries and subdues the effects of grain boundary scattering. A mechanism based on the correlation between electron-hole interaction and carrier mobility is proposed for degenerately doped wide band-gap semiconductors.

  1. Characterization and study of antibacterial activity of spray pyrolysed ZnO:Al thin films

    NASA Astrophysics Data System (ADS)

    Manoharan, C.; Pavithra, G.; Bououdina, M.; Dhanapandian, S.; Dhamodharan, P.

    2016-08-01

    Aluminum-doped zinc oxide (ZnO:Al) thin films were deposited onto glass substrates using spray pyrolysis technique with the substrate temperature of 400 °C. X-ray diffraction analysis indicated that the films were polycrystalline with hexagonal wurtzite structure preferentially oriented along (002) direction. Surface morphology of the films obtained by scanning electron microscopy showed that the grains were of nanoscale size with porous nature for 6 at.% of Al. Atomic force microscopy observations revealed that the particles size and surface roughness of the films decreased with Al-doping. Optical measurements indicated that ZnO:Al (6 at.%) exhibited a band gap of 3.11 eV, which is lower than that of pure ZnO film, i.e. 3.42 eV. Photoluminescence analysis showed weak NBE emission at 396 nm for Al-doped films. The low resistivity, high hall mobility and carrier concentration values were obtained at a doping ratio of 6 at.% of Al. The effective incorporation of 6 at.% of Al into ZnO lattice by occupying Zn sites yielded a well-pronounced antibacterial activity against Staphylococcus aureus.

  2. Mechanical and optical characteristics of Al-doped C 60 films

    NASA Astrophysics Data System (ADS)

    Nishinaga, Jiro; Aihara, Tomoyuki; Yamagata, Hiroshi; Horikoshi, Yoshiji

    2005-05-01

    Al-doped C 60 films are grown on GaAs and quartz glass substrates by solid source molecular beam epitaxy. Mechanical and optical properties of the films are investigated by Vickers hardness test, absorption and reflectance spectra, and photoluminescence measurements. Vickers hardness of 250 HV is confirmed for the Al-doped C 60 films with the molecular ratio of Al to C 60 of 30, and the Al-doped C 60 films are found to be undissolved in organic solvents. The absorption spectra of pure C 60 films show some peaks caused by the electron transition among the C 60 molecular orbitals. These absorption peaks become less pronounced in Al-doped C 60 films, probably due to Al incorporation in C 60 matrix. In addition, new photoluminescence peaks appear around 1.75, 1.85 and 1.95 eV. The energy of 1.95 eV coincides well with the energy difference between HOMO and LUMO states. These results suggest that the parity forbidden transition is relieved by the molecular distortion due to the Al-C 60 bonding.

  3. Interfacial perpendicular magnetic anisotropy and damping parameter in ultra thin Co2FeAl films

    NASA Astrophysics Data System (ADS)

    Cui, Yishen; Khodadadi, Behrouz; Schäfer, Sebastian; Mewes, Tim; Lu, Jiwei; Wolf, Stuart A.

    2013-04-01

    B2-ordered Co2FeAl films were synthesized using an ion beam deposition tool. A high degree of chemical ordering ˜81.2% with a low damping parameter (α) less than 0.004 was obtained in a 50 nm thick film via rapid thermal annealing at 600 °C. The perpendicular magnetic anisotropy (PMA) was optimized in ultra thin Co2FeAl films annealed at 350 °C without an external magnetic field. The reduced thickness and annealing temperature to achieve PMA introduced extrinsic factors thus increasing α significantly. However, the observed damping of Co2FeAl films was still lower than that of Co60Fe20B20 films prepared at the same thickness and annealing temperature.

  4. Magnetic properties and microstructure of L10-FePt/AlN perpendicular nanocomposite films

    NASA Astrophysics Data System (ADS)

    Feng, C.; Zhang, E.; Xu, C. C.; Li, N.; Jiang, Y.; Yu, G. H.; Li, B. H.

    2011-09-01

    Based on interfacial manipulation of a MgO (100) substrate and non-magnetic AlN compound, L10-FePt/AlN perpendicular nanocomposite films were designed and prepared. Systematic studies on magnetic properties and microstructure of the films show that the MgO substrate controls crystal orientation of the FePt lattice and induces perpendicular magnetic anisotropy (PMA). The AlN compound helps to control the island growth mode and acts as isolators of FePt islands to pin the sites of FePt domains, resulting in manipulation of coercivity and magnetic exchange interaction of the films. Moreover, PMA of the film was optimized by appropriately decreasing film thickness or increasing substrate temperature.

  5. Enhanced mechanism investigation on violet-blue emission of ZnO films by incorporating Al and Zn to form ZnO-Al-Zn films

    NASA Astrophysics Data System (ADS)

    Chen, Haixia; Ding, Jijun; Wang, Xiaomeng; Wang, Xiaojun; Chen, Guoxiang; Ma, Li

    2016-12-01

    ZnO, ZnO-Zn, ZnO-Al0.10-Zn and ZnO-Al0.15-Zn are deposited on glass substrates by radio frequency and direct current magnetron co-sputtering. Photoluminescence (PL) measurements show that the optical performances of samples are strongly dependent on both Al and Zn incoprations. The origin of the defect-related PL emission has been investigated for a long time. Several different hypotheses have been proposed, however, they are still under investigation. Especially for the blue emissions, its origins have been debated intensely for more than thirty years because of its sparsity and instability. In this paper, both violet and blue emissions are observed in all the samples. PL emission decreases sharply as Zn is doped in ZnO to form ZnO-Zn film. However, as both Al and Zn are simultaneously doped in ZnO to form ZnO-Al0.10-Zn film, PL emission conversely increases and attains the maxima. In addition, PL emission decreases again with the increase of Al target power to form ZnO-Al0.15-Zn film. We concluded that violet-blue emission is ascribed to defect types in reverse change trend with interstitial Zn, such as Zn vacancies. This is different from previous universal hypothesis that violet-blue emission is from interstitial Zn defects.

  6. Pulsed laser deposition of AlMgB14 thin films

    SciTech Connect

    Britson, Jason Curtis

    2008-11-18

    Hard, wear-resistant coatings of thin film borides based on AlMgB14 have the potential to be applied industrially to improve the tool life of cutting tools and pump vanes and may account for several million dollars in savings as a result of reduced wear on these parts. Past work with this material has shown that it can have a hardness of up to 45GPa and be fabricated into thin films with a similar hardness using pulsed laser deposition. These films have already been shown to be promising for industrial applications. Cutting tools coated with AlMgB14 used to mill titanium alloys have been shown to substantially reduce the wear on the cutting tool and extend its cutting life. However, little research into the thin film fabrication process using pulsed laser deposition to make AlMgB14 has been conducted. In this work, research was conducted into methods to optimize the deposition parameters for the AlMgB14 films. Processing methods to eliminate large particles on the surface of the AlMgB14 films, produce films that were at least 1m thick, reduce the surface roughness of the films, and improve the adhesion of the thin films were investigated. Use of a femtosecond laser source rather than a nanosecond laser source was found to be effective in eliminating large particles considered detrimental to wear reduction properties from the films. Films produced with the femtosecond laser were also found to be deposited at a rate 100 times faster than those produced with the nanosecond laser. However, films produced with the femtosecond laser developed a relatively high RMS surface roughness around 55nm. Attempts to decrease the surface roughness were largely unsuccessful. Neither increasing the surface temperature of the substrate during deposition nor using a double pulse to ablate the material was found to be extremely successful to reduce the surface roughness. Finally, the adhesion of the thin films to M2 tool steel

  7. In situ evolution of trivalent chromium process passive film on Al in a corrosive aqueous environment.

    PubMed

    Dong, Xuecheng; Argekar, Sandip; Wang, Peng; Schaefer, Dale W

    2011-11-01

    In situ neutron reflectivity (NR) is used to observe the structure and evolution of a Trivalent Chromium Process (TCP) passive film on Al in a NaCl-D(2)O solution. Using a split liquid reflectivity cell we mimicked the corrosion process on the anodic sites in alloy AA 2024-T3 in a pitting scenario. The split cell separates the anodic and cathodic reactions, allowing NR observation of the corroding anodic surface under potential control. We observed the evolution of the TCP film on the Al anode and compared the degradation of the Al with and without TCP protection. When held at 100 mV above the open-circuit potential (OCP), unprotected aluminum dissolves at a rate of 120 Å/h. By contrast, TCP-coated Al is stable up to the pitting potential (200 mV above OCP). In the passive state D(2)O molecules penetrate the bulk TCP film by partially replacing the hydrate water. In spite of exchange of hydration water, the TCP film is stable and the underlying aluminum is fully protected. The passive character of the TCP film is due to a dense layer at the metal-TCP interface and/or to suppression of ion transport in the bulk film. As the pitting potential is approached the film swells and NaCl-D(2)O solution penetrates the TCP film. At this point, 50 vol % of the TCP film is occupied by bulk NaCl-D(2)O solution. Failure occurs by aluminum dissolution under the swollen TCP film as the imbibed solution contacts the Al metal. Further increase in potential leads to complete stripping of the TCP film.

  8. Thermal conductivity and mechanical properties of AlN-based thin films

    NASA Astrophysics Data System (ADS)

    Moraes, V.; Riedl, H.; Rachbauer, R.; Kolozsvári, S.; Ikeda, M.; Prochaska, L.; Paschen, S.; Mayrhofer, P. H.

    2016-06-01

    While many research activities concentrate on mechanical properties and thermal stabilities of protective thin films, only little is known about their thermal properties being essential for the thermal management in various industrial applications. Based on the 3ω-method, we show the influence of Al and Cr on the temperature dependent thermal conductivity of single-phase cubic structured TiN and single-phase wurtzite structured AlN thin films, respectively, and compare them with the results obtained for CrN thin films. The dc sputtered AlN thin films revealed a highly c-axis oriented growth for deposition temperatures of 250 to 700 °C. Their thermal conductivity was found to increase strongly with the film thickness, indicating progressing crystallization of the interface near amorphous regions during the sputtering process. For the 940 nm AlN film, we found a lower boundary for the thermal conductivity of 55.3 W m-1 K-1 . By the substitution of only 10 at. % Al with Cr, κ significantly reduces to ˜5.0 W m-1 K-1 , although the single-phase wurtzite structure is maintained. The single-phase face centered cubic TiN and Ti0.36Al0.64N thin films exhibit κ values of 3.1 W m-1 K-1 and 2.5 W m-1 K-1 , respectively, at room temperature. Hence, also here, the substitutional alloying reduces the thermal conductivity, although at a significantly lower level. Single-phase face centered cubic CrN thin films show κ values of 3.6 W m-1 K-1 . For all nitride based thin films investigated, the thermal conductivity slightly increases with increasing temperature between 200 and 330 K. This rather unusual behavior is based on the high defect density (especially point defects) within the thin films prepared by physical vapor deposition.

  9. WE-AB-BRB-08: Progress Towards a 2D OSL Dosimetry System Using Al2O3:C Films

    SciTech Connect

    Ahmed, M F; Yukihara, E; Schnell, E; Ahmad, S; Akselrod, M; Brons, S; Greilich, S; Jakel, O; Osinga, J

    2015-06-15

    Purpose: To develop a 2D dosimetry system based on the optically stimulated luminescence (OSL) of Al{sub 2}O{sub 3}:C films for medical applications. Methods: A 2D laser scanning OSL reader was built for readout of newly developed Al2O3:C films (Landauer Inc.). An image reconstruction algorithm was developed to correct for inherent effects introduced by reader design and detector properties. The system was tested using irradiations with photon and carbon ion beams. A calibration was obtained using a 6 MV photon beam from clinical accelerator and the dose measurement precision was tested using a range of doses and different dose distributions (flat field and wedge field). The dynamic range and performance of the system in the presence of large dose gradients was also tested using 430 MeV/u {sup 12}C single and multiple pencil beams. All irradiations were performed with Gafchromic EBT3 film for comparison. Results: Preliminary results demonstrate a near-linear OSL dose response to photon fields and the ability to measure dose in dose distributions such as flat field and wedge field. Tests using {sup 12}C pencil beam demonstrate ability to measure doses over four orders of magnitude. The dose profiles measured by the OSL film generally agreed well with that measured by the EBT3 film. The OSL image signal-to-noise ratio obtained in the current conditions require further improvement. On the other hand, EBT3 films had large uncertainties in the low dose region due to film-to-film or intra-film variation in the background. Conclusion: A 2D OSL dosimetry system was developed and initial tests have demonstrated a wide dynamic range as well as good agreement between the delivered and measured doses. The low background, wide dynamic range and wide range of linearity in dose response observed for the Al{sub 2}O{sub 3}:C OSL film can be beneficial for dosimetry in radiation therapy applications, especially for small field dosimetry. This work has been funded by Landauer Inc. Dr

  10. Fabrication of L10-MnAl perpendicularly magnetized thin films for perpendicular magnetic tunnel junctions

    NASA Astrophysics Data System (ADS)

    Hosoda, Masaki; Oogane, Mikihiko; Kubota, Miho; Kubota, Takahide; Saruyama, Haruaki; Iihama, Satoshi; Naganuma, Hiroshi; Ando, Yasuo

    2012-04-01

    Structural and magnetic properties of MnAl thin films with different composition, growth temperature, and post-annealing temperature were investigated. The optimum condition for fabrication of L10-MnAl perpendicularly magnetized thin film deposited on Cr-buffered MgO single crystal substrate was revealed. The results of x ray diffraction indicated that the MnAl films annealed at proper temperature had a (001)-orientation and L10-ordered structure. The L10-ordered films were perpendicularly magnetized and had a large perpendicular anisotropy. In addition, low surface roughness was achieved. For the optimized fabrication condition, the saturation magnetization Ms of 600 emu/cm3 and perpendicular magnetic anisotropy Ku of 1.0 × 107 erg/cm3 was obtained using the Mn48Al52 target at deposition temperature of 200 °C and post-annealing temperature of 450 °C.

  11. Growth, interfacial alloying, and oxidation of ultra-thin Al films on Ru(0001)

    NASA Astrophysics Data System (ADS)

    Wu, Yutong; Tao, Hui-Shu; Garfunkel, Eric; Madey, Theodore E.; Shinn, Neal D.

    1995-08-01

    The growth and oxidation of ultra-thin aluminum films on Ru(0001) have been studied by low energy ion scattering (LEIS) and X-ray photoelectron spectroscopy (XPS) using both Mg K α and synchrotron soft X-ray radiation. For Al films of average thickness ˜ 15 Å deposited at 300 K, LEIS demonstrates that the Ru substrate is completely covered. Upon annealing to ˜ 1000 K LEIS shows the reappearance of Ru at the surface. At the same time, the metallic Al 2p peak shifts to lower binding energy and a low binding energy shoulder appears on the Ru 3d peak, suggesting {Al}/{Ru} interfacial alloying. Annealing Al films to ˜ 1000 K in 1 × 10 -4 Torr oxygen produces an oxidized surface layer that completely covers the Ru substrate; the resultant aluminum oxide films are stoichiometric.

  12. Magnetic and Magnetooptical Properties of Co-Al Alloy Thin Films on a Nanostructured Substrate

    NASA Astrophysics Data System (ADS)

    Nakatani, Morio; Suzuki, Yoshihisa; Sumi, Satoshi; Tanemura, Sakae

    2005-01-01

    We investigated magnetic and magnetooptical properties of Co-Al magnetic thin films on a nanostructured substrate. The nanostructured substrate was made of polycarbonate by injection molding. The stamper was made by electron beam cutting. The nanostructured substrate contributed a perpendicular magnetic anisotropy component to the film and decreased the reflectance of the film. The Kerr rotation angle on the nanostructured substrate was greater than that on a glass substrate.

  13. Microstructure changes of polyimide/MMT-AlN composite hybrid films under corona aging

    NASA Astrophysics Data System (ADS)

    Chen, M. H.; Yin, J. H.; Bu, W. B.; Liu, X. X.; Su, B.; Lei, Q. Q.

    2012-12-01

    A novel method using montmorillonite-AlN (MMT-AlN) composite particles as dopants in polyimide (PI) has been proposed and tested. We choose MMT-AlN as dopants in PI for lamellar structure of MMT and globular structure of AlN and hope such mixed micro- and nano-particles can enhance PI's resistance to corona aging. Our corona aging test result has confirmed our method and a 7% doped PI/MMT-AlN film has corona aging time extended more than 40 times compared with pure PI film. The microstructure changes of PI/MMT-AlN films due to corona aging have been analyzed by multiple surface analysis techniques. The analysis result shows coexistence of mass fractal and surface fractal in the sample films of PI/MMT-AlN. A dense inorganic block layer of MMT-AlN formed on the surface of doped PI films during corona aging is believed to be the mechanism of providing the protection against further corona aging.

  14. Growth and oxidation of thin film Al{sub 2}Cu

    SciTech Connect

    Son, K.A.; Missert, N.A.; Barbour, J.C.; Hren, J.J.; Copeland, R.G.; Minor, K.G.

    1999-11-09

    Al{sub 2}Cu thin films ({approximately}382 nm) are fabricated by melting and resolidifying Al/Cu bilayers in the presence of a {approximately}3 nm Al{sub 2}O{sub 3} passivating layer. X-ray Photoelectron Spectroscopy (XPS) measures a 1.0 eV shift of the Cu2p{sub 3/2} peak and a 1.6 eV shift of the valence band relative to metallic Cu upon Al{sub 2}Cu formation. Scanning Electron Microscopy (SEM) and Electron Back-Scattered Diffraction (EBSD) show that the Al{sub 2}Cu film is composed of 30--70 {mu}m wide and 10--25 mm long cellular grains with (110) orientation. The atomic composition of the film as estimated by Energy Dispersive Spectroscopy (EDS) is 67{+-}2% Al and 33{+-}2% Cu. XPS scans of Al{sub 2}O{sub 3}/Al{sub 2}Cu taken before and after air exposure indicate that the upper Al{sub 2}Cu layers undergo further oxidation to Al{sub 2}O{sub 3} even in the presence of {approximately}5 nm Al{sub 2}O{sub 3}. The majority of Cu produced from oxidation is believed to migrate below the Al{sub 2}O{sub 3} layers, based upon the lack of evidence for metallic Cu in the XPS scans. In contrast to Al/Cu passivated with Al{sub 2}O{sub 3}, melting/resolidifying the Al/Cu bilayer without Al{sub 2}O{sub 3} results in phase-segregated dendritic film growth.

  15. Properties of Cu(In,Ga,Al)Se{sub 2} thin films fabricated by magnetron sputtering

    SciTech Connect

    Hameed, Talaat A.; Cao, Wei; Mansour, Bahiga A.; Elzawaway, Inas K.; Abdelrazek, El-Metwally M.; Elsayed-Ali, Hani E.

    2015-05-15

    Cu(In,Ga,Al)Se{sub 2} (CIGAS) thin films were studied as an alternative absorber layer material to Cu(In{sub x}Ga{sub 1−x})Se{sub 2}. CIGAS thin films with varying Al content were prepared by magnetron sputtering on Si(100) and soda-lime glass substrates at 350 °C, followed by postdeposition annealing at 520 °C for 5 h in vacuum. The film composition was measured by an electron probe microanalyzer while the elemental depth profiles were determined by secondary ion mass spectrometry. X-ray diffraction studies indicated that CIGAS films are single phase with chalcopyrite structure and that the (112) peak clearly shifts to higher 2θ values with increasing Al content. Scanning electron microscopy images revealed dense and well-defined grains, as well as sharp CIGAS/Si(100) interfaces for all films. Atomic force microscopy analysis indicated that the roughness of CIGAS films decreases with increasing Al content. The bandgap of CIGAS films was determined from the optical transmittance and reflectance spectra and was found to increase as Al content increased.

  16. Structural, electrical, and optical properties of atomic layer deposition Al-doped ZnO films

    SciTech Connect

    Banerjee, P; Lee, W. J.; Bae, K. R.; Lee, Sang Bok; Rubloff, Gary W

    2010-01-01

    Al-doped ZnO (AZO) films of ~100nm thickness with various Aldoping were prepared at 150°C by atomic layer deposition on quartz substrates. At low Aldoping, the films were strongly textured along the [100] direction, while at higher Aldoping the films remained amorphous. Atomic force microscopy results showed that Al–O cycles when inserted in a ZnOfilm, corresponding to a few atomic percent Al, could remarkably reduce the surface roughness of the films. Hall measurements revealed a maximum mobility of 17.7cm{sup 2} /Vs . Film resistivity reached a minima of 4.4×10{sup -3} Ωcm whereas the carrier concentration reached a maxima of 1.7×10{sup 20} cm{sup -3} , at 3 at.% Al. The band gap of AZO films varied from 3.23 eV for undoped ZnOfilms to 3.73 eV for AZO films with 24.6 at.% Al. Optical transmittance over 80% was obtained in the visible region. The detrimental impact of increased Al resulting in decreased conductivity due to doping past 3.0 at.% is evident in the x-ray diffraction data, as an abrupt increase in the optical band gap and as a deviation from the Burstein–Moss effect.

  17. Defect assisted saturable absorption characteristics in Al and Li doped ZnO thin films

    NASA Astrophysics Data System (ADS)

    K. M., Sandeep; Bhat, Shreesha; S. M., Dharmaprakash; P. S., Patil; Byrappa, K.

    2016-09-01

    The influence of different doping ratios of Al and Li on the nonlinear optical properties, namely, a two-photon absorption and a nonlinear refraction using single beam Z-scan technique, of nano-crystalline ZnO thin films has been investigated in the present study. A sol-gel spin-coated pure ZnO, Al-doped ZnO (AZO), and Li-doped ZnO (LZO) thin films have been prepared. The stoichiometric deviations induced by the occupancy of Al3+ and Li+ ions at the interstitial sites injects the compressive stress in the AZO and LZO thin films, respectively, while the extended defect states below the conduction band leads to a redshift of energy band gap in the corresponding films as compared to pure ZnO thin film. Switching from an induced absorption in ZnO and 1 at. wt. % doped AZO and LZO films to a saturable absorption (SA) in 2 at. wt. % doped AZO and LZO films has been observed, and it is attributed to the saturation of a linear absorption of the defect states. The closed aperture Z-scan technique revealed the self-focusing (a positive nonlinear refractive index) in all the films, which emerge out of the thermo-optical effects due to the continuous illumination of laser pulses. A higher third-order nonlinear optical susceptibility χ(3) of the order 10-3 esu has been observed in all the films.

  18. Synthesis of c-axis oriented AlN thin films on different substrates: A review

    SciTech Connect

    Iriarte, G.F.

    2010-09-15

    Highly c-axis oriented AlN thin films have been deposited by reactive sputtering on different substrates. The crystallographic properties of layered film structures consisting of a piezoelectric layer, aluminum nitride (AlN), synthesized on a variety of substrates, have been examined. Aluminum nitride thin films have been deposited by reactive pulsed-DC magnetron sputtering using an aluminum target in an Ar/N{sub 2} gas mixture. The influence of the most critical deposition parameters on the AlN thin film crystallography has been investigated by means of X-ray diffraction (XRD) analysis of the rocking curve Full-Width at Half Maximum (FWHM) of the AlN-(0 0 0 2) peak. The relationship between the substrate, the synthesis parameters and the crystallographic orientation of the AlN thin films is discussed. A guide is provided showing how to optimize these conditions to obtain highly c-axis oriented AlN thin films on substrates of different nature.

  19. Electrical and optical properties of Al doped Zno film prepared by spray pyrolysis technique

    NASA Astrophysics Data System (ADS)

    Shrestha, Shankar Prasad; Basnet, Pradeep

    2008-04-01

    Transparent conducting thin films of zinc oxides and aluminum doped zinc oxide (AZO) were prepared by the spray pyrolysis technique using an aqueous solution of dehydrate zinc acetate (CH 3COOH. 2H IIO, pure- Merck A. R. grade) and hex hydrate aluminum chloride (AlCl 3 .6H IIO) on the micro glass slides. The prepared thin films are found to be highly adherent to the substrate and possess uniform conduction. The optical and electrical properties of the film were investigated in terms of different Al concentration in the starting solution and different substrate temperature. Four probe method in Van der pauw configuration was used for electrical resistivity measurements. The resistivity of Al doped film is observed to vary with doping concentration. The lowest resistivity is observed in the film doping with 2 at % [Al/Zn]. The Hall coefficient measurements show that both ZnO and AZO show the n-type conduction. The carrier concentration was observed to be highest at 2 at% of Al doping. The optical measurements of all the samples with aluminum concentrations was found to be >85 % showing the film to be highly transparent in nature. With increase in Al concentration, the optical band gap was observed increase from 3.27 eV to 3.41 eV.

  20. Fabrication of Bi Nanowire Array into Nanoporous Film Made from Phase-Separated Al-Si Film

    NASA Astrophysics Data System (ADS)

    Fukutani, Kazuhiko; Den, Tohru

    2008-04-01

    Ultrahigh-pore-density nanoporous films with a pore diameter less than 10 nm and a pore density exceeding 1016 pores/m2 have been fabricated by the phase separation of an Al-Si system and the subsequent removal of Al cylinders, for use in the template-assisted growth of Bi nanowire arrays. Bi was used to fill the pores of template films by electrodeposition. The temperature dependence of the resistance of the obtained Bi nanowires with a diameter of 9 nm, parallel to the Bi nanowire growth direction, exhibits a semimetal-to-semiconductor transition due to the quantum confinement effect.

  1. Structural and mechanical properties of magnetron-sputtered Al-Au thin films

    NASA Astrophysics Data System (ADS)

    Azadmanjiri, Jalal; Wang, James; Berndt, Christopher C.; Wen, Cuie; Srivastava, Vijay K.; Kapoor, Ajay

    2017-01-01

    There is global interest in improving the mechanical properties of light metals such as aluminum (Al)-based alloys by tailoring their microstructures at the nanometer scale. On the other hand, gold (Au) has been widely applied as a wire bonding material due to its prominent ductility and conductivity. In this study, the microstructure, hardness and elastic modulus of DC magnetron-sputtered aluminum/gold (Al/Au) composite thin films of different thicknesses were investigated. It is shown that in addition to the formation of AlAu2 phase, additional Al and Au nanosegregated phases also formed. The Al/Au thin films of 600 and 800 nm thickness exhibit the maximum hardness ( 5.40 GPa) and elastic modulus ( 97.00 GPa). However, film thicknesses of 1000 and 1200 nm demonstrate a reduction in hardness and elastic modulus due to different growth mechanisms and the formation of voids that can be attributed to the Kirkendall phenomenon.

  2. AlScN thin film based surface acoustic wave devices with enhanced microfluidic performance

    NASA Astrophysics Data System (ADS)

    Wang, W. B.; Fu, Y. Q.; Chen, J. J.; Xuan, W. P.; Chen, J. K.; Wang, X. Z.; Mayrhofer, P.; Duan, P. F.; Bittner, A.; Schmid, U.; Luo, J. K.

    2016-07-01

    This paper reports the characterization of scandium aluminum nitride (Al1-x Sc x N, x  =  27%) films and discusses surface acoustic wave (SAW) devices based on them. Both AlScN and AlN films were deposited on silicon by sputtering and possessed columnar microstructures with (0 0 0 2) crystal orientation. The AlScN/Si SAW devices showed improved electromechanical coupling coefficients (K 2, ~2%) compared with pure AlN films (<0.5%). The performance of the two types of devices was also investigated and compared, using acoustofluidics as an example. The AlScN/Si SAW devices achieved much lower threshold powers for the acoustic streaming and pumping of liquid droplets, and the acoustic streaming and pumping velocities were 2  ×  and 3  ×  those of the AlN/Si SAW devices, respectively. Mechanical characterization showed that the Young’s modulus and hardness of the AlN film decreased significantly when Sc was doped, and this was responsible for the decreased acoustic velocity and resonant frequency, and the increased temperature coefficient of frequency, of the AlScN SAW devices.

  3. AlN thin films deposited by DC reactive magnetron sputtering: effect of oxygen on film growth

    NASA Astrophysics Data System (ADS)

    García Molleja, Javier; José Gómez, Bernardo; Ferrón, Julio; Gautron, Eric; Bürgi, Juan; Abdallah, Bassam; Abdou Djouadi, Mohamed; Feugeas, Jorge; Jouan, Pierre-Yves

    2013-11-01

    Aluminum nitride is a ceramic compound with many technological applications in many fields, for example optics, electronics and resonators. Contaminants play a crucial role in the AlN performance. This paper focuses mainly in the effect of oxygen when AlN, with O impurities in its structure, is grown on oxidized layers. In this study, AlN thin films have been deposited at room temperature and low residual vacuum on SiO2/Si (1 0 0) substrates. AlN films were grown by DC reactive magnetron sputtering (aluminum target) and atmosphere composed by an argon/nitrogen mixture. Working pressure was 3 mTorr. Film characterization was performed by AES, XRD, SEM, EDS, FTIR, HRTEM, SAED and band-bending method. Our results show that oxidized interlayer imposes compressive stresses to AlN layer, developing a polycrystalline deposition. Indeed, when film thickness is over 900 nm, influence of oxidized interlayer diminishes and crystallographic orientation changes to the (0 0 0 2) one, i.e., columnar structure, and stress relief is induced (there is a transition from compressive to tensile stress). Also, we propose a growth scenario to explain this behaviour.

  4. Electrical characteristics of SrTiO3/Al2O3 laminated film capacitors

    NASA Astrophysics Data System (ADS)

    Peng, Yong; Yao, Manwen; Chen, Jianwen; Xu, Kaien; Yao, Xi

    2016-07-01

    The electrical characteristics of SrTiO3/Al2O3 (160 nm up/90 nm down) laminated film capacitors using the sol-gel process have been investigated. SrTiO3 is a promising and extensively studied high-K dielectric material, but its leakage current property is poor. SrTiO3/Al2O3 laminated films can effectively suppress the demerits of pure SrTiO3 films under low electric field, but the leakage current value reaches to 0.1 A/cm2 at higher electric field (>160 MV/m). In this study, a new approach was applied to reduce the leakage current and improve the dielectric strength of SrTiO3/Al2O3 laminated films. Compared to laminated films with Au top electrodes, dielectric strength of laminated films with Al top electrodes improves from 205 MV/m to 322 MV/m, simultaneously the leakage current maintains the same order of magnitude (10-4 A/cm2) until the breakdown occurs. The above electrical characteristics are attributed to the anodic oxidation reaction in origin, which can repair the defects of laminated films at higher electric field. The anodic oxidation reactions have been confirmed by the corresponding XPS measurement and the cross sectional HRTEM analysis. This work provides a new approach to fabricate dielectrics with high dielectric strength and low leakage current.

  5. Fast magnetization precession for perpendicularly magnetized MnAlGe epitaxial films with atomic layered structures

    NASA Astrophysics Data System (ADS)

    Mizukami, S.; Sakuma, A.; Kubota, T.; Kondo, Y.; Sugihara, A.; Miyazaki, T.

    2013-09-01

    Epitaxial growth and magnetization precessional dynamics for tetragonal MnAlGe films are investigated. The films are grown on MgO (100) with c axis parallel to the film normal and well-ordered layered structures. The film exhibits rectangular hysteresis loop with perpendicular magnetic anisotropy constant of 4.7 Merg/cm3 and saturation magnetization of 250 emu/cm3. Magnetization precession with precession frequency of ˜100 GHz is observed by time-resolved magneto-optical Kerr effect. Further, the Gilbert damping constant is found to be less than ˜0.05, which is much larger than that obtained using the first principles calculations.

  6. Nanomechanical and optical properties of highly a-axis oriented AlN films

    NASA Astrophysics Data System (ADS)

    Jose, Feby; Ramaseshan, R.; Tripura Sundari, S.; Dash, S.; Tyagi, A. K.; Kiran, M. S. R. N.; Ramamurty, U.

    2012-12-01

    This paper reports optical and nanomechanical properties of predominantly a-axis oriented AlN thin films. These films were deposited by reactive DC magnetron sputtering technique at an optimal target to substrate distance of 180 mm. X-ray rocking curve (FWHM = 52 arcsec) studies confirmed the preferred orientation. Spectroscopic ellipsometry revealed a refractive index of 1.93 at a wavelength of 546 nm. The hardness and elastic modulus of these films were 17 and 190 GPa, respectively, which are much higher than those reported earlier can be useful for piezoelectric films in bulk acoustic wave resonators.

  7. Highly piezoelectric co-doped AlN thin films for wideband FBAR applications.

    PubMed

    Yokoyama, Tsuyoshi; Iwazaki, Yoshiki; Onda, Yosuke; Nishihara, Tokihiro; Sasajima, Yuichi; Ueda, Masanori

    2015-06-01

    We report piezoelectric materials composed of charge-compensated co-doped (Mg, β)(x)Al(1-x)N (β = Zr or Hf) thin films. The effect of the dopant element into AlN on the crystal structure, and piezoelectric properties of co-doped AlN was determined on the basis of a first-principles calculation, and the theoretical piezoelectric properties were confirmed by experimentally depositing thin films of magnesium (Mg) and zirconium (Zr) co-doped AlN (Mg-Zr-doped AlN). The Mg-Zrdoped AlN thin films were prepared on Si (100) substrates by using a triple-radio-frequency magnetron reactive co-sputtering system. The crystal structures and piezoelectric coefficients (d33) were investigated as a function of the concentrations, which were measured by X-ray diffraction and a piezometer. The results show that the d33 of Mg-Zr-doped AlN at total Mg and Zr concentrations (both expressed as β) of 0.35 was 280% larger than that of pure AlN. The experimentally measured parameter of the crystal structure and d33 of Mg-Zr-doped AlN (plotted as functions of total Mg and Zr concentrations) were in very close agreement with the corresponding values obtained by the first-principle calculations. Thin film bulk acoustic wave resonators (FBAR) employing (Mg,Zr)0.13Al0.87N and (Mg, Hf)0.13 Al0.87N as a piezoelectric thin film were fabricated, and their resonant characteristics were evaluated. The measured electromechanical coupling coefficient increased from 7.1% for pure AlN to 8.5% for Mg-Zr-doped AlN and 10.0% for Mg- Hf-doped AlN. These results indicate that co-doped (Mg, β)(x)Al(1-x)N (β = Zr or Hf) films have potential as piezoelectric thin films for wideband RF applications.

  8. Influence of Annealing Treatment on the Physical Properties of InAlN Films

    NASA Astrophysics Data System (ADS)

    Afzal, Naveed; Devarajan, Mutharasu; Ahmad, M. A.; Ibrahim, Kamarulazizi

    2015-07-01

    In this work, pure indium and aluminum targets were co-sputtered in a reactive argon-nitrogen environment at 200°C to deposit InAlN film on the GaAs substrate in the presence of a ZnO buffer layer. The as-grown film was annealed at 750°C for 1 h in a high temperature furnace under nitrogen ambient. XRD pattern of the as-grown film did not display any diffraction peak relating to the InAlN due to its poor structural crystallinity, however, the annealed film exhibited InAlN diffraction peaks corresponding to (002), (101) and (102) planes. A significant increase in the grain size and the surface roughness was observed after the films' annealing. Raman spectroscopy revealed A1 (LO) and E2 (high) phonon modes whereas the PL analysis showed a luminescence peak at 2 eV in the annealed film. The Hall measurements indicated an increase in the carrier concentration and electron mobility after the annealing which was accompanied by a decrease in electrical resistivity of the film. The dark current-voltage (I-V) characteristics of the as-grown and the annealed films were also recorded to investigate the barrier height and the ideality factor.

  9. Non-volatile Al2O3 Memory using Nanoscale Al-rich Al2O3 Thin Film as a Charge Storage Layer

    NASA Astrophysics Data System (ADS)

    Nakata, Shunji; Saito, Kunio; Shimada, Masaru

    2006-04-01

    This article describes the fabrication process and capacitance-voltage (C-V) characteristics of a new non-volatile Al2O3 memory with nanoscale thin film deposited by electron-cyclotron-resonance sputtering. Al-rich Al2O3 shows characteristics somewhere between Al and Al2O3 in the refractive index and wet etching rate. C-V characteristics of Al-rich Al2O3 memory show a large hysteresis window due to the Al-rich structure, while there is no hysteresis window in the case of stoichiometric Al2O3. This memory is expected to stay non-volatile for several years or more because the capacitance value after writing and erasing operation remained almost unchanged after 4 h at T=85 °C. Also, another new memory structure comprising SiO2/Al2O3 and the Al-rich Al2O3 structure is proposed, which features increased mobility due to the reduction of electron scattering at the Si/Al2O3 interface.

  10. Interfacial structures of LaAlO3 films on Si(100) substrates

    NASA Astrophysics Data System (ADS)

    Lu, X. B.; Liu, Z. G.; Shi, G. H.; Ling, H. Q.; Zhou, H. W.; Wang, X. P.; Nguyen, B. Y.

    This paper investigates the interfacial characteristics of LaAlO3 (LAO) and LaAlOxNy (LAON) films deposited directly on silicon substrates by the pulsed-laser deposition technique. High-resolution transmission electron microscopy (HRTEM) pictures indicate that an interfacial reaction between LAO and Si often exists. The interfacial layer thickness of LAO films deposited in a nitrogen ambient atmosphere is smaller than that of LAO films deposited in an oxygen ambient atmosphere. X-ray photoelectron spectroscopy (XPS) and Auger electron spectroscopy (AES) were used to study the composition of the interfacial layer. The shift of the La 3d photoelectron peak to a higher binding energy compared to LaAlO3, the shift of the Al 2p peak to a higher binding energy compared to LaAlO3, the shift of the Si 2p peak to a lower binding energy compared to SiO2 and the intermediate location of the O 1s peak compared to LaAlO3 and SiO2 indicate the existence of a La-Al-Si-O bonding structure, which was also proved by the AES depth profile of LAO films. It can be concluded that the interfacial layer is not simply SiO2 but a compound of La-Al-Si-O.

  11. CROSS-DISCIPLINARY PHYSICS AND RELATED AREAS OF SCIENCE AND TECHNOLOGY: Excellent Passivation of p-Type Si Surface by Sol-Gel Al2O3 Films

    NASA Astrophysics Data System (ADS)

    Xiao, Hai-Qing; Zhou, Chun-Lan; Cao, Xiao-Ning; Wang, Wen-Jing; Zhao, Lei; Li, Hai-Ling; Diao, Hong-Wei

    2009-08-01

    Al2O3 films with a thickness of about 100 nm synthesized by spin coating and thermally treated are applied for field-induced surface passivation of p-type crystalline silicon. The level of surface passivation is determined by techniques based on photoconductance. An effective surface recombination velocity below 100 cm/s is obtained on 10Ω ·cm p-type c-Si wafers (Cz Si). A high density of negative fixed charges in the order of 1012 cm-2 is detected in the Al2O3 films and its impact on the level of surface passivation is demonstrated experimentally. Furthermore, a comparison between the surface passivation achieved for thermal SiO2 and plasma enhanced chemical vapor deposition SiNx:H films on the same c-Si is presented. The high negative fixed charge density explains the excellent passivation of p-type c-Si by Al2O3.

  12. Circular test structure for the determination of piezoelectric constants of ScxAl1−xN thin films applying Laser Doppler Vibrometry and FEM simulations☆

    PubMed Central

    Mayrhofer, P.M.; Euchner, H.; Bittner, A.; Schmid, U.

    2015-01-01

    Piezoelectric scandium aluminium nitride (ScxAl1−xN) thin films offer a large potential for the application in micro electromechanical systems, as advantageous properties of pure AlN thin films are maintained, but combined with an increased piezoelectric actuation and sensing potential. ScxAl1−xN thin films with x = 27% have been prepared by DC reactive magnetron sputtering to find optimized deposition parameters to maximize the piezoelectric constants d33 and d31. For the accurate and simultaneous measurement of these constants Laser Doppler Vibrometry has been applied and compared to finite element (FEM) simulations. The electrode design has been optimized to rotational symmetric structures enabling a 180° phase shifted excitation, so that a straight-forward comparison of experimental displacement curves with those obtained from FEM is feasible. PMID:26109748

  13. Mixed Al and Si doping in ferroelectric HfO2 thin films

    NASA Astrophysics Data System (ADS)

    Lomenzo, Patrick D.; Takmeel, Qanit; Zhou, Chuanzhen; Chung, Ching-Chang; Moghaddam, Saeed; Jones, Jacob L.; Nishida, Toshikazu

    2015-12-01

    Ferroelectric HfO2 thin films 10 nm thick are simultaneously doped with Al and Si. The arrangement of the Al and Si dopant layers within the HfO2 greatly influences the resulting ferroelectric properties of the polycrystalline thin films. Optimizing the order of the Si and Al dopant layers led to a remanent polarization of ˜20 μC/cm2 and a coercive field strength of ˜1.2 MV/cm. Post-metallization anneal temperatures from 700 °C to 900 °C were used to crystallize the Al and Si doped HfO2 thin films. Grazing incidence x-ray diffraction detected differences in peak broadening between the mixed Al and Si doped HfO2 thin films, indicating that strain may influence the formation of the ferroelectric phase with variations in the dopant layering. Endurance characteristics show that the mixed Al and Si doped HfO2 thin films exhibit a remanent polarization greater than 15 μC/cm2 up to 108 cycles.

  14. Electron transport in Al-Cu co-doped ZnO thin films

    NASA Astrophysics Data System (ADS)

    Serin, T.; Atilgan, A.; Kara, I.; Yildiz, A.

    2017-03-01

    To investigate the influence of varying Al content on structural, optical, and electrical properties of ZnO thin films, Al-Cu co-doped ZnO thin films with fixed Cu content at 1 wt. % and different Al contents (1, 3, and 5 wt. %) were successfully synthesized on glass substrates using a sol-gel process. The results indicated that the varying Al content affects not only the grain size and band gap but also the electrical conductivity of the films, and a linear relationship was found between the band gap and strain values of the films. The temperature-dependent electrical conductivity data of the films demonstrated that electron transport was mainly controlled by the grain boundaries at intermediate and high temperatures, whereas it was governed by Mott-variable range hopping at low temperatures. Additionally, 3 wt. % Al content improved the electrical conductivity of Al-Cu co-doped ZnO by lowering the trap density and enhancing the hopping probability.

  15. Mixed Al and Si doping in ferroelectric HfO{sub 2} thin films

    SciTech Connect

    Lomenzo, Patrick D.; Nishida, Toshikazu; Takmeel, Qanit; Zhou, Chuanzhen; Chung, Ching-Chang; Jones, Jacob L.; Moghaddam, Saeed

    2015-12-14

    Ferroelectric HfO{sub 2} thin films 10 nm thick are simultaneously doped with Al and Si. The arrangement of the Al and Si dopant layers within the HfO{sub 2} greatly influences the resulting ferroelectric properties of the polycrystalline thin films. Optimizing the order of the Si and Al dopant layers led to a remanent polarization of ∼20 μC/cm{sup 2} and a coercive field strength of ∼1.2 MV/cm. Post-metallization anneal temperatures from 700 °C to 900 °C were used to crystallize the Al and Si doped HfO{sub 2} thin films. Grazing incidence x-ray diffraction detected differences in peak broadening between the mixed Al and Si doped HfO{sub 2} thin films, indicating that strain may influence the formation of the ferroelectric phase with variations in the dopant layering. Endurance characteristics show that the mixed Al and Si doped HfO{sub 2} thin films exhibit a remanent polarization greater than 15 μC/cm{sup 2} up to 10{sup 8} cycles.

  16. Optical and electrical properties of polycrystalline and amorphous Al-Ti thin films

    NASA Astrophysics Data System (ADS)

    Canulescu, S.; Borca, C. N.; Rechendorff, K.; Davidsdóttir, S.; Pagh Almtoft, K.; Nielsen, L. P.; Schou, J.

    2016-04-01

    The structural, optical, and transport properties of sputter-deposited Al-Ti thin films have been investigated as a function of Ti alloying with a concentration ranging from 2% to 46%. The optical reflectivity of Al-Ti films at visible and near-infrared wavelengths decreases with increasing Ti content. X-ray absorption fine structure measurements reveal that the atomic ordering around Ti atoms increases with increasing Ti content up to 20% and then decreases as a result of a transition from a polycrystalline to amorphous structure. The transport properties of the Al-Ti films are influenced by electron scattering at the grain boundaries in the case of polycrystalline films and static defects, such as anti-site effects and vacancies in the case of the amorphous alloys. The combination of Ti having a real refractive index (n) comparable with the extinction coefficient (k) and Al with n much smaller than k allows us to explore the parameter space for the free-electron behavior in transition metal-Al alloys. The free electron model, applied for the polycrystalline Al-Ti films with Ti content up to 20%, leads to an optical reflectance at near infrared wavelengths that scales linearly with the square root of the electrical resistivity.

  17. Study on quasiperiodic Ta/Al multilayer films by x-ray diffraction

    SciTech Connect

    Peng, R.W.; Hu, A.; Jiang, S.S. )

    1991-11-11

    Quasiperiodic (Fibonacci) Ta/Al multilayer films with Ta(110) and Al(111) textures were fabricated by magnetron sputtering. The structure of the multilayers was characterized in detail by x-ray diffraction. The diffraction peaks at low and high angles can be indexed by the projection method from the high-dimension periodic structure. The experimental results were in good agreement with the numerical calculation using the model for the compositionally modulated multilayers. The diffraction spectrum of the quasiperiodic Ta/Al multilayers is totally different from that of periodic structure, and the possible application of Fibonacci films as optical elements in a soft x-ray region is discussed.

  18. Effects of annealing on properties of Al2O3 monolayer film at 355 nm

    NASA Astrophysics Data System (ADS)

    Tu, Feifei; Wang, Hu; Xing, Huanbin; Zheng, Ruxi; Zhang, Weili; Yi, Kui

    2015-07-01

    Al2O3 monolayer films were deposited on fused silica substrate and K9 glass substrate by electron-beam deposition. Annealing as a general post-treatment was used to enhance the quality of the Al2O3 coatings. The optical properties of the films were analyzed from the transmission spectra of the samples. The composition of the samples before and after annealing were measured by X-ray photoelectron spectroscopy (XPS). According to the analysis of the results, it can be found that the oxidation degree of the coatings increases after annealing in O2 inside coating chamber. The laser-induced damage thresholds of the Al2O3 films can be increased after the annealing process. Finally, the damage morphologies of the Al2O3 coatings were analyzed.

  19. Influence of hydrogen and hydrogen/methane plasmas on AlN thin films

    SciTech Connect

    Pobedinskas, P. Hardy, A.; Van Bael, M. K.; Haenen, K.; Degutis, G.; Dexters, W.

    2014-02-24

    Polycrystalline aluminum nitride (AlN) thin films are exposed to hydrogen and hydrogen/methane plasmas at different conditions. The latter plays an indispensable role in the subsequent deposition of nanocrystalline diamond thin films on AlN. The changes of AlN properties are investigated by means of Fourier transform infrared (FTIR) and Raman spectroscopies as well as atomic force microscopy. The E{sub 1}(TO) and E{sub 2}{sup 2} phonon mode frequencies blue-shift after the exposure to plasmas. The damping constant of E{sub 1}(TO) phonon, calculated from FTIR transmission spectra using the factorized model of a damped oscillator, and the width of E{sub 2}{sup 2} peak in Raman spectra decrease with increasing substrate temperature till the decomposition of AlN thin film becomes notable. It is proven that these changes are driven by the plasmas as annealing in vacuum does not induce them.

  20. Substrate temperature effects on the electrical properties of sputtered Al doped ZnO thin films

    NASA Astrophysics Data System (ADS)

    Kim, Deok-Kyu; Kim, Hong-Bae

    2015-09-01

    Al doped ZnO (AZO) thin films were deposited on glass substrate by RF magnetron sputtering system. The dependence of structural, electrical, and optical properties on the substrate temperature variations in the range of 0-400 °C was investigated. The structural results reveal that the AZO films are (0 0 2) oriented and at 400 °C a considerable crystallinity enhancement of the films is observed. With increasing the substrate temperature, the resistivity is increased by decreasing of the mobility and carrier concentration. X-ray photoelectron spectroscopy (XPS) results show that the mobility and the carrier concentration are decreased by increasing the surface bonding and decreasing the Al content, respectively. In our case, the increase in substrate temperature suppressed the incorporation of Al atoms together with the decrease of oxygen vacancy. The improvement of Al doping efficiency is a very important factor to obtain better electrical properties at high substrate temperatures.

  1. Intrinsic stress evolution during amorphous oxide film growth on Al surfaces

    SciTech Connect

    Flötotto, D. Wang, Z. M.; Jeurgens, L. P. H.; Mittemeijer, E. J.

    2014-03-03

    The intrinsic stress evolution during formation of ultrathin amorphous oxide films on Al(111) and Al(100) surfaces by thermal oxidation at room temperature was investigated in real-time by in-situ substrate curvature measurements and detailed atomic-scale microstructural analyses. During thickening of the oxide a considerable amount of growth stresses is generated in, remarkably even amorphous, ultrathin Al{sub 2}O{sub 3} films. The surface orientation-dependent stress evolutions during O adsorption on the bare Al surfaces and during subsequent oxide-film growth can be interpreted as a result of (i) adsorption-induced surface stress changes and (ii) competing processes of free volume generation and structural relaxation, respectively.

  2. Al:ZnO thin film: An efficient matrix for cholesterol detection

    NASA Astrophysics Data System (ADS)

    Batra, Neha; Tomar, Monika; Gupta, Vinay

    2012-12-01

    Al doped ZnO thin film (Al:ZnO) has been realized as a potential matrix for the development of efficient cholesterol biosensor. The correlation between the structural and electrical properties of ZnO thin film with varying Al doping concentration (1% to 5%) and their cyclic voltammetric (CV) response has been studied. 2% Al doped ZnO films were found to give the best CV response and were further utilized for immobilization of cholesterol oxidase (ChOx) to detect cholesterol. Amperometric and photometric studies reveal that the prepared bioelectrode based on 2% Al doped ZnO matrix (ChOx/Al:ZnO/Pt/glass) is highly sensitive (sensitivity = 173 μAmM-1 cm-2) to the detection of cholesterol in the wide range from 0.6-12.9 mM (25-500 mg/dl). A relatively low value of enzyme's kinetic parameter (Michaelis menten constant, 2.53 mM) indicates enhanced affinity of the immobilized ChOx toward cholesterol. The prepared bioelectrode is found to be exhibiting high shelf life (10 weeks) having negligible interference with the presence of other biomolecules in human serum indicating promising application of Al doped ZnO thin films for cholesterol biosensing.

  3. Corrosion resistance of sintered NdFeB coated with SiC/Al bilayer thin films by magnetron sputtering

    NASA Astrophysics Data System (ADS)

    Huang, Yiqin; Li, Heqin; Zuo, Min; Tao, Lei; Wang, Wei; Zhang, Jing; Tang, Qiong; Bai, Peiwen

    2016-07-01

    The poor corrosion resistance of sintered NdFeB imposes a great challenge in industrial applications. In this work, the SiC/Al bilayer thin films with the thickness of 510 nm were deposited on sintered NdFeB by magnetron sputtering to improve the corrosion resistance. A 100 nm Al buffer film was used to reduce the internal stress between SiC and NdFeB and improve the surface roughness of the SiC thin film. The morphologies and structures of SiC/Al bilayer thin films and SiC monolayer film were investigated with FESEM, AFM and X-ray diffraction. The corrosion behaviors of sintered NdFeB coated with SiC monolayer film and SiC/Al bilayer thin films were analyzed by polarization curves. The magnetic properties were measured with an ultra-high coercivity permanent magnet pulse tester. The results show that the surface of SiC/Al bilayer thin films is more compact and uniform than that of SiC monolayer film. The corrosion current densities of SiC/Al bilayer films coated on NdFeB in acid, alkali and salt solutions are much lower than that of SiC monolayer film. The SiC/Al bilayer thin films have little influence to the magnetic properties of NdFeB.

  4. Mechanical properties of Al/a-C nanocomposite thin films synthesized using a plasma focus device

    NASA Astrophysics Data System (ADS)

    A. Umar, Z.; S. Rawat, R.; R., Ahmad; K. Kumar, A.; Y., Wang; Hussain, T.; Z., Chen; Shen, L.; Zhang, Z.

    2014-02-01

    The Al/a-C nanocomposite thin films are synthesized on Si substrates using a dense plasma focus device with aluminum fitted anode and operating with CH4/Ar admixture. X-ray diffractometer results confirm the formation of metallic crystalline Al phases using different numbers of focus shots. Raman analyses show the formation of D and G peaks for all thin film samples, confirming the presence of a-C in the nanocomposite thin films. The formation of Al/a-C nanocomposite thin films is further confirmed using X-ray photoelectron spectroscopy analysis. The scanning electron microscope results show that the deposited thin films consist of nanoparticles and their agglomerates. The sizes of th agglomerates increase with increasing numbers of focus deposition shots. The nanoindentation results show the variations in hardness and elastic modulus values of nanocomposite thin film with increasing the number of focus shots. Maximum values of hardness and elastic modulus of the composite thin film prepared using 20 focus shots are found to be about 10.7 GPa and 189.2 GPa, respectively.

  5. C-axis orientated AlN films deposited using deep oscillation magnetron sputtering

    NASA Astrophysics Data System (ADS)

    Lin, Jianliang; Chistyakov, Roman

    2017-02-01

    Highly <0001> c-axis orientated aluminum nitride (AlN) films were deposited on silicon (100) substrates by reactive deep oscillation magnetron sputtering (DOMS). No epitaxial favored bond layer and substrate heating were applied for assisting texture growth. The effects of the peak target current density (varied from 0.39 to 0.8 Acm-2) and film thickness (varied from 0.25 to 3.3 μm) on the c-axis orientation, microstructure, residual stress and mechanical properties of the AlN films were investigated by means of X-ray diffraction rocking curve methodology, transmission electron microscopy, optical profilometry, and nanoindentation. All AlN films exhibited a <0001> preferred orientation and compressive residual stresses. At similar film thicknesses, an increase in the peak target current density to 0.53 Acm-2 improved the <0001> orientation. Further increasing the peak target current density to above 0.53 Acm-2 showed limited contribution to the texture development. The study also showed that an increase in the thickness of the AlN films deposited by DOMS improved the c-axis alignment accompanied with a reduction in the residual stress.

  6. Characterization of nanocrystalline ZnO:Al films by sol-gel spin coating method

    SciTech Connect

    Gareso, P. L. Rauf, N. Juarlin, E.; Sugianto,; Maddu, A.

    2014-09-25

    Nanocrystalline ZnO films doped with aluminium by sol-gel spin coating method have been investigated using optical transmittance UV-Vis and X-ray diffraction (X-RD) measurements. ZnO films were prepared using zinc acetate dehydrate (Zn(CH{sub 3}COO){sub 2}@@‡2H{sub 2}O), ethanol, and diethanolamine (DEA) as a starting material, solvent, and stabilizer, respectively. For doped films, AlCl{sub 3} was added to the mixture. The ZnO:Al films were deposited on a transparent conductive oxide (TCO) substrate using spin coating technique at room temperature with a rate of 3000 rpm in 30 sec. The deposited films were annealed at various temperatures from 400°C to 600°C during 60 minutes. The transmittance UV-Vis measurement results showed that after annealing at 400°C, the energy band gap profile of nanocrystalline ZnO:Al film was a blue shift. This indicated that the band gap of ZnO:Al increased after annealing due to the increase of crystalline size. As the annealing temperature increased the bandgap energy was a constant. In addition to this, there was a small oscillation occurring after annealing compared to the as–grown samples. In the case of X-RD measurements, the crystalinity of the films were amorphous before annealing, and after annealing the crystalinity became enhance. Also, X-RD results showed that structure of nanocrystalline ZnO:Al films were hexagonal polycrystalline with lattice parameters are a = 3.290 Å and c = 5.2531 Å.

  7. Fabrication of thermally evaporated Al thin film on cylindrical PET monofilament for wearable computing devices

    NASA Astrophysics Data System (ADS)

    Liu, Yang; Kim, Eunju; Han, Jeong In

    2016-01-01

    During the initial development of wearable computing devices, the conductive fibers of Al thin film on cylindrical PET monofilament were fabricated by thermal evaporation. Their electrical current-voltage characteristics curves were excellent for incorporation into wearable devices such as fiber-based cylindrical capacitors or thin film transistors. Their surfaces were modified by UV exposure and dip coating of acryl or PVP to investigate the surface effect. The conductive fiber with PVP coating showed the best conductivities because the rough surface of the PET substrate transformed into a smooth surface. The conductivities of PET fiber with and without PVP were 6.81 × 103 Ω-1cm-1 and 5.62 × 103 Ω-1cm-1, respectively. In order to understand the deposition process of Al thin film on cylindrical PET, Al thin film on PET fiber was studied using SEM (Scanning Electron Microscope), conductivities and thickness measurements. Hillocks on the surface of conductive PET fibers were observed and investigated by AFM on the surface. Hillocks were formed and grown during Al thermal evaporation because of severe compressive strain and plastic deformation induced by large differences in thermal expansion between PET substrate and Al thin film. From the analysis of hillock size distribution, it turns out that hillocks grew not transversely but longitudinally. [Figure not available: see fulltext.

  8. Comparison of the luminescent properties of LuAG:Pr nanopowders, crystals and films using synchrotron radiation

    NASA Astrophysics Data System (ADS)

    Gorbenko, V.; Zych, E.; Voznyak, T.; Nizankovskiy, S.; Zorenko, T.; Zorenko, Yu.

    2017-04-01

    Comparison of the luminescent properties of nanopowder, single crystal and single crystalline film of Pr3+ doped Pr-doped Lu3Al5O12 garnet (LuAG:Pr) prepared by the different technological methods is performed in this work using the time-resolved emission spectroscopy under excitation by synchrotron radiation with an energy of 3.7-25 eV at 300 K and 10 K. The notable differences in the properties of the Pr3+ luminescence are observed in LuAG:Pr crystals and films caused by involving the LuAl antisite defects and oxygen vacancies in crystals and Pb2+ flux related dopant in films in the excitation processes of the Pr3+ luminescence. At the same time, we have also found that the influence of host defects on the Pr3+ luminescence is significantly smaller in the LuAG:Pr nanopowders.

  9. Characteristics of Al-doped ZnO films grown by atomic layer deposition for silicon nanowire photovoltaic device.

    PubMed

    Oh, Byeong-Yun; Han, Jin-Woo; Seo, Dae-Shik; Kim, Kwang-Young; Baek, Seong-Ho; Jang, Hwan Soo; Kim, Jae Hyun

    2012-07-01

    We report the structural, electrical, and optical characteristics of Al-doped ZnO (ZnO:Al) films deposited on glass by atomic layer deposition (ALD) with various Al2O3 film contents for use as transparent electrodes. Unlike films fabricated by a sputtering method, the diffraction peak position of the films deposited by ALD progressively moved to a higher angle with increasing Al2O3 film content. This indicates that Zn sites were effectively replaced by Al, due to layer-by-layer growth mechanism of ALD process which is based on alternate self-limiting surface chemical reactions. By adjusting the Al2O3 film content, a ZnO:Al film with low electrical resistivity (9.84 x 10(-4) Omega cm) was obtained at an Al2O3 film content of 3.17%, where the Al concentration, carrier mobility, optical transmittance, and bandgap energy were 2.8 wt%, 11.20 cm2 V(-1) s(-1), 94.23%, and 3.6 eV, respectively. Moreover, the estimated figure of merit value of our best sample was 8.2 m7Omega(-1). These results suggest that ZnO:Al films deposited by ALD could be useful for electronic devices in which especially require 3-dimensional conformal deposition of the transparent electrode and surface passivation.

  10. Antimicrobial effect of Al2O3, Ag and Al2O3/Ag thin films on Escherichia coli and Pseudomonas putida

    NASA Astrophysics Data System (ADS)

    Angelov, O.; Stoyanova, D.; Ivanova, I.; Todorova, S.

    2016-10-01

    The influence of Al2O3, Ag and Al2O3/Ag thin films on bacterial growth of Gramnegative bacteria Pseudomonas putida and Escherichia coli is studied. The nanostructured thin films are deposited on glass substrates without intentional heating through r.f. magnetron sputtering in Ar atmosphere of Al2O3 and Ag targets or through sequential sputtering of Al2O3 and Ag targets, respectively. The individual Ag thin films (thickness 8 nm) have a weak bacteriostatic effect on Escherichia coli expressed as an extended adaptive phase of the bacteria up to 5 hours from the beginning of the experiment, but the final effect is only 10 times lower bacterial density than in the control. The individual Al2O3 film (20 nm) has no antibacterial effect against two strains E. coli - industrial and pathogenic. The Al2O3/Ag bilayer films (Al2O3 20 nm/Ag 8 nm) have strong bactericidal effect on Pseudomonas putida and demonstrate an effective time of disinfection for 2 hours. The individual films Al2O3 and Ag have not pronounced antibacterial effect on Pseudomonas putida. A synergistic effect of Al2O3/Ag bilayer films in formation of oxidative species on the surface in contact with the bacterial suspension could be a reason for their antimicrobial effect on E. coli and P. putida.

  11. Fabrication of L10-Ordered MnAl Films for Observation of Tunnel Magnetoresistance Effect

    NASA Astrophysics Data System (ADS)

    Saruyama, Haruaki; Oogane, Mikihiko; Kurimoto, Yuta; Naganuma, Hiroshi; Ando, Yasuo

    2013-06-01

    We succeeded in fabricating L10-ordered MnAl films with a high perpendicular magnetic anisotropy energy of 107 erg/cm3 and a small average film roughness of 0.4 nm by using a molten Mn-Al sputtering alloyed target and optimizing the substrate temperature. In addition, we investigated the tunnel magnetoresistance (TMR) effect in magnetic tunnel junctions (MTJs) with the prepared L10-ordered MnAl electrode. The TMR effect was observed at RT in an MTJ with a very thin Co50Fe50 layer inserted into the MnAl electrode and MgO tunneling barrier interface. This is the first observation of the TMR effect in MTJs with an L10-ordered MnAl electrode.

  12. Fabrication of MnAl thin films with perpendicular anisotropy on Si substrates

    NASA Astrophysics Data System (ADS)

    Huang, Efrem Y.; Kryder, Mark H.

    2015-05-01

    For the first time, perpendicularly magnetized L10-ordered MnAl thin films were demonstrated using a MgO seed layer on Si substrates, which is critical to making spintronic devices. Fabrication conditions were selected by systematically varying sputtering parameters (film thickness, DC sputtering power, in situ substrate temperature, and post-annealing temperature) and investigating structural and magnetic properties. Strong perpendicular magnetic anisotropy with coercivity Hc of 8 kOe, Ku of over 6.5 × 106 erg/cm3, saturation magnetization Ms of 300 emu/cm3, and out-of-plane squareness Mr/Ms of 0.8 were achieved. These MnAl film properties were obtained via DC magnetron sputtering at 530 °C, followed by 350 °C annealing under a 4 kOe magnetic field oriented perpendicular to the film plane.

  13. Synthesis and conductivity enhancement of Al-doped ZnO nanorod array thin films.

    PubMed

    Hsu, Chih-Hsiung; Chen, Dong-Hwang

    2010-07-16

    Al-doped ZnO (AZO) nanorod array thin films with various Al/Zn molar ratios were synthesized by chemical bath deposition. The resultant AZO nanorods were well-aligned at the glass substrate, growing vertically along the c-axis [001] direction. In addition, they had an average diameter of 64.7 +/- 16.8 nm and an average length of about 1.0 microm with the structure of wurtzite-type ZnO. Analyses of energy dispersive x-ray spectra and x-ray photoelectron spectra indicated that Al atoms had been doped into the ZnO crystal lattice. The doping of Al atoms did not result in significant changes in the structure and crystal orientation, but the electrical resistivity was found to increase first and then decrease with increasing Al content owing to the increase of carrier concentration and the decrease of mobility. In addition, the transmission in the visible region increased but the increase was reduced at higher Al doping levels. After hydrogen treatment, the morphology of the AZO nanorod array thin films remained unchanged. However, the electrical resistivity decreased significantly due to the formation of oxygen vacancies and interstitial hydrogen atoms. When the real Al/Zn molar ratio was about 3.7%, the conductivity was enhanced about 1000 times and a minimum electrical resistivity of 6.4 x 10( - 4) Omega cm was obtained. In addition, the transmission of the ZnO nanorod array thin film in the visible region was significantly increased but the increase was less significant for the AZO nanorod array thin film, particularly at higher Al doping levels. In addition, the current-voltage curves of the thin film devices with ZnO or AZO nanorod arrays revealed that AZO had a higher current response than ZnO and hydrogen treatment led to a more significant enhancement of current responses (about 100-fold).

  14. Photoluminescence lifetime of Al-doped ZnO films in visible region

    NASA Astrophysics Data System (ADS)

    Sharma, Bhupendra K.; Khare, Neeraj; Haranath, D.

    2010-12-01

    ZnO and Al-doped ZnO films have been deposited on quartz substrates by ultrasonically assisted chemical vapor deposition technique. Photoluminescence (PL) spectra of the films reveal that Al doping leads to suppression of defect related visible band. Time resolved photoluminescence studies have been carried out for the measurement of lifetime of deep level luminescence. The decay of PL intensity with time has been found to follow biexponential behavior. The relative contributions of fast decay component (τ1) and slow decay component (τ2) in total decay process are found to be ˜99% and ˜1% respectively. The values of τ1 and τ2 are found to decrease with Al doping in ZnO film. The decrease of both τ1 and τ2 is attributed to increase in non-radiative recombination due to reduction in grain sizes and the decrease in radiative recombination due to suppression of defects.

  15. Rhombohedral AlPt films formed by self-propagating, high temperature synthesis.

    SciTech Connect

    Adams, David Price; Rodriguez, Mark Andrew; Kotula, Paul Gabriel

    2005-11-01

    High-purity AlPt thin films prepared by self-propagating, high temperature combustion synthesis show evidence for a new rhombohedral phase. Sputter deposited Al/Pt multilayers of various designs are reacted at different rates in air and in vacuum, and each form a new trigonal/hexagonal aluminide phase with unit cell parameters a = 15.571(8) {angstrom}, c = 5.304(1) {angstrom}, space group R-3 (148), and Z, the number of formula units within a unit cell, = 39. The lattice is isostructural to that of the AlPd R-3 lattice as reported by Matkovic and Schubert (Matkovic, 1977). Reacted films have a random in-plane crystallographic texture, a modest out-of-plane (001) texture, and equiaxed grains with dimensions on the order of film thickness.

  16. A transition in the magneto-transport in the L10 MnAl thin films

    NASA Astrophysics Data System (ADS)

    Luo, Linqiang; Lu, Jiwei; Dao, Nam; Cui, Yishen; Wolf, Stuart A.

    2015-03-01

    In this talk we will report on L10 MnAl thin films with perpendicular magnetic anisotropy prepared on single crystal MgO substrates by co-sputtering Mn and Al targets. A Cr seeding layer enabled the epitaxial growth of the MnAl films. The magneto-resistance (MR) of these films was measured using a Hall bar structure. When the external magnetic field was applied perpendicular to the thin film surface, a change of the sign of MR was observed as will be discussed below. Above 175K, a negative magnetoresistance was observed with two maxima occuring at the coercivity fields of the MnAl thin films. Below 175K, the MR became positive, and the MR ratio increased with decreasing temperature. The possible mechanisms for the transition in the MR will be discussed in detail in this talk. They include the effects of inhomogeneity, chemical ordering and the underlying domain structure. The authors gratefully acknowledge financial support provided by INSPIRE program.

  17. Perpendicularly magnetized τ-MnAl (001) thin films epitaxied on GaAs

    NASA Astrophysics Data System (ADS)

    Nie, S. H.; Zhu, L. J.; Lu, J.; Pan, D.; Wang, H. L.; Yu, X. Z.; Xiao, J. X.; Zhao, J. H.

    2013-04-01

    Perpendicularly magnetized τ-MnAl films have been epitaxied on GaAs (001) by molecular-beam epitaxy. Crystalline quality and magnetic properties of the samples were strongly dependent on growth temperature. The highest coercivity of 10.7 kOe, saturation magnetization of 361.4 emu/cm3, perpendicular magnetic anisotropy constant of 13.65 Merg/cm3, and magnetic energy product of 4.44 MGOe were achieved. These tunable magnetic properties make MnAl films valuable as excellent and cost-effective alternative for not only high density perpendicular magnetic recording storage and spintronics devices but also permanent magnets.

  18. Impact of nitrogen concentration on the performance of LaAlO3(1-y/2)Ny films for high-k gate dielectric applications

    NASA Astrophysics Data System (ADS)

    Shi, G. H.; Lu, X. B.; Kong, X. K.; Liu, Z. G.

    2005-02-01

    A series of LaAlO3(1-y/2)Ny (LAON) films with different nitrogen concentrations have been prepared by pulsed laser deposition on Pt-coated silicon substrates and directly on hydrogen terminated Si (100) substrates using LaAlO3(1-y/2)Ny ceramic targets with y = 0, 0.2, 0.4, 0.8 and 1, respectively. All the films as deposited at a substrate temperature of 600°C and in 20 Pa nitrogen ambient have amorphous structures. Their crystallization temperatures are not less than 845°C. For ease of comparison, all the films are deposited under the same deposition conditions and all the films deposited on hydrogen terminated silicon (100) substrates have the same physical thickness of 9 nm. The dielectric constant of the materials as well as the equivalent oxide thickness (EOT) and the leakage current density of the Pt/LAON/Si structures as functions of nitrogen concentration of the films were studied systematically and determined. It is found that with a dielectric constant of 33, an EOT of 2 nm and a leakage current density of 11.5 mA cm-2 at 1 V, the LAON films with y = 0.4 exhibited optimal properties for high-k gate dielectric applications. The reasons for the excellent performance of the films with this nitrogen concentration were discussed.

  19. Properties of Al-doped ZnS Films Grown by Chemical Bath Deposition

    NASA Astrophysics Data System (ADS)

    Nagamani, K.; Prathap, P.; Lingappa, Y.; Miles, R. W.; Reddy, K. T. R.

    Zinc sulphide (ZnS) buffer layers are a cadmium free, wider energy band gap, alternative to the cadmium sulphide (CdS) buffer layers commonly used in copper indium gallium diselenide (CuInGaSe2)-based solar cells. However extrinsic doping of the ZnS is important to lower the resistivity of the layers and to improve flexibility of device design. In this work, Al-doped ZnS nanocrystalline films have been produced on glass substrates using a chemical bath deposition (CBD) method. The Al- concentration was varied from 0 at. % to 10 at. %, keeping other deposition parameters constant. The elemental composition of a typical sample with 6 at. % 'Al' in ZnS was Zn=44.9 at. %, S=49.8 at. % and Al=5.3 at.%. The X-ray diffraction data taken on these samples showed a broad peak corresponding to the (111) plane of ZnS while the crystallite size varied in the range, 8 - 15 nm, depending on the concentration of Al in the layers. The films with a Al-doping content of 6 at. % had an optical transmittance of 75% in the visible range and the energy band gap evaluated from the data was 3.66 eV. The films n-type electrical conductivities and the electrical resistivity varied in the range, 107-103 Ωcm, it decreasing with an increase of the Al-concentration in the solution.

  20. Sputter deposition of stress-controlled piezoelectric AlN and AlScN films for ultrasonic and energy harvesting applications.

    PubMed

    Barth, Stephan; Bartzsch, Hagen; Gloess, Daniel; Frach, Peter; Herzog, Thomas; Walter, Susan; Heuer, Henning

    2014-08-01

    This paper reports on the deposition and characterization of piezoelectric AlN and AlXSc1-XN layers. Characterization methods include XRD, SEM, active thermo probe, pulse echo, and piezometer measurements. A special focus is on the characterization of AlN regarding the mechanical stress in the films. The stress in the films changed between -2.2 GPa (compressive) and 0.2 GPa (tensile) and showed a significant dependence on film thickness. The cause of this behavior is presumed to be the different mean grain sizes at different film thicknesses, with bigger mean grain sizes at higher thicknesses. Other influences on film stress such as the sputter pressure or the pulse mode are presented. The deposition of gradient layers using those influences allowed the adjustment of film stress while retaining the piezoelectric properties.

  1. Drag coupling between Al thin films and two-dimensional electron gases near the superconducting transition

    NASA Astrophysics Data System (ADS)

    Farina, L. A.; Lewis, K. M.; Kurdak, C.; Ghosh, S.; Krishna, S.; Bhattacharya, P.

    2003-03-01

    We studied the coupling between vortices in a superconducting film and electrons in a two-dimensional electron gas (2DEG). We measured structures consisting of a thin Al film evaporated on a GaAs/AlGaAs heterostructure containing a 2DEG patterned in a 1mmx4μm Hall bar structure. This structure allowed us to vary the carrier density of the 2DEG in situ, by applying a voltage with respect to the Al. We looked for evidence of interaction by passing a current through the Al film and measuring the drag voltage induced in the 2DEG, near the superconducting transition temperature. Al films with sheet resistances of 20 Ω and 1 k Ω, located 650 Åand 1000 Åabove the 2DEG, respectively, were measured. The initial results indicate no drag resistance measured down to the 10nV range with 10nA-250 μA drive currents, for various 2DEG carrier densities. The opposite configuration was also measured, and showed no drag voltage. The theoretical implications of these results will be discussed. *current address: Center for High Technology Materials, Electrical and Computer Engineering Dept., Albuquerque, NM, 87106

  2. Structural, electron transportation and magnetic behavior transition of metastable FeAlO granular films

    PubMed Central

    Bai, Guohua; Wu, Chen; Jin, Jiaying; Yan, Mi

    2016-01-01

    Metal-insulator granular film is technologically important for microwave applications. It has been challenging to obtain simultaneous high electrical resistivity and large saturation magnetization due to the balance of insulating non-magnetic and metallic magnetic components. FeAlO granular films satisfying both requirements have been prepared by pulsed laser deposition. The as-deposited film exhibits a high resistivity of 3700 μΩ∙cm with a negative temperature coefficient despite that Fe content (0.77) exceeds the percolation threshold. This originates from its unique microstructure containing amorphous Fe nanoparticles embedded in Al2O3 network. By optimizing the annealing conditions, superior electromagnetic properties with enhanced saturation magnetization (>1.05 T), high resistivity (>1200 μΩ∙cm) and broadened Δf (>3.0 GHz) are obtained. Phase separation with Al2O3 aggregating as inclusions in crystallized Fe(Al) matrix is observed after annealing at 673 K, resulting in a metallic-like resistivity. We provide a feasible way to achieve both high resistivity and large saturation magnetization for the FeAlO films with dominating metallic component and show that the microstructure can be tuned for desirable performance. PMID:27075955

  3. Bondability of Al-Si thin film in thermosonic gold wire bonding. [integrated circuits

    NASA Technical Reports Server (NTRS)

    Nakagawa, K.; Miyata, K.; Banjo, T.; Shimada, W.

    1985-01-01

    The bondability of two kinds of Al-Si thin films in thermosonic Au wire bonding was examined by means of microshear tests. One type of film was formed by sputtering an Al-2% Si alloy, and the other was formed by depositing an 0.05 micrometer-thick polysilicon layer on SiO2 by chemical vapor deposition (CVD) and then depositing a 1.2 micrometer-thick Al layer on them by evaporation. After heat-treatment at 450 deg for 30 min., Si in the Al-Si film crystallized. The grain size of the crystallized Si affects the thermosonic wire bondability, i.e., for Al-2% Si sputtered films, good bondability was obtained under relatively small (1.0 micrometer) grain size conditions. In the successive layer process, on the other hand, the grain size of crystallized Si varies with the polysilicon CVD temperature. The optimum CVD temp. was determined from the standpoint of bondability with respect to grain size.

  4. Properties of inductively coupled N2 plasma processed AlInN thin film prepared by post annealing of rf sputtered Al/InN stack

    NASA Astrophysics Data System (ADS)

    Shanmugan, S.; Mutharasu, D.

    2016-12-01

    InN is a potential material for low cost tandem solar cells and its combination with Si could make the cell conversion efficiency over 30%. Doping into InN is a promising method which alters the properties of InN thin film. In this work, InN thin film was deposited on Si substrate and the doping was achieved by stacking Al elemental layer on InN thin film followed by annealing process. The doped InN (AlInN) thin film was characterized and confirmed the formation of (002) and (103) oriented phases. The prepared AlInN thin film was plasma processed using Inductively coupled plasma (ICP) in presence of N2 gas and the surface and structural properties was modified. The N2 plasma was influenced the preferred orientation of AlInN thin film and their structural parameters such as crystallite size, strain and dislocation density noticeably. Very smooth surface (<4 nm) with small particle size (97 nm) of AlInN thin film was achieved for 15 sccm flow rate during the plasma process. Very low value in leakage current was confirmed for AlInN thin film processed at 15 sccm N2 flow by current-voltage (IV) characteristics.

  5. Electronic properties and bonding characteristics of AlN:Ag thin film nanocomposites

    SciTech Connect

    Lekka, Ch. E.; Patsalas, P.; Komninou, Ph.; Evangelakis, G. A.

    2011-03-01

    We present theoretical and experimental results on the bonding and structural characteristics of AlN:Ag thin film nanocomposites obtained by means of density functional theory (DFT) computations, high resolution transmission electron microscopy (HRTEM) observations, Auger electron spectroscopy (AES), and x-ray diffraction (XRD) measurements. From the theoretical calculations it was determined that the presence of the Ag substitutional of N or Al atoms affects the electronic density of states (EDOS) of the resulting systems. In particular, occupied energy states are introduced (between others) that lie within the energy gap of the AlN matrix due to Ag-d, Al-p (accompanied with a charge transfer from Al to Ag), Ag-p, and N-p hybridizations, respectively. The effect is predicted to be even more pronounced in the case of Ag nanoparticle inclusions affecting the EDOS of the composite system. These predictions were verified by the HRTEM images that gave unequivocal evidence for the presence and stability of Ag nanoparticles in the AlN matrix. In addition, the AES data suggested a metal-metal (Ag-Al) bonding preference, while the XRD patterns revealed that the atomic Ag dispersions in the AlN thin films results in a small elongation of the Wurtzite lattice, which is in agreement with the DFT predictions. These results may useful in tailoring the electronic response of AlN-based systems and the design of devices for various opto-electronic applications.

  6. Carbon diffusion in alumina from carbon and Ti{sub 2}AlC thin films

    SciTech Connect

    Guenette, Mathew C.; Tucker, Mark D.; Bilek, Marcela M. M.; McKenzie, David R.; Ionescu, Mihail

    2011-04-15

    Carbon diffusion is observed in single crystal {alpha}-Al{sub 2}O{sub 3} substrates from carbon and Ti{sub 2}AlC thin films synthesized via pulsed cathodic arc deposition. Diffusion was found to occur at substrate temperatures of 570 deg. C and above. The diffusion coefficient of carbon in {alpha}-Al{sub 2}O{sub 3} is estimated to be of the order 3x10{sup -13} cm{sup 2}/s for deposition temperatures in the 570-770{sup o}C range by examining elastic recoil detection analysis (ERDA) elemental depth profiles. It is suggested that an appropriate diffusion barrier may be useful when depositing carbon containing thin films on {alpha}-Al{sub 2}O{sub 3} substrates at high temperatures.

  7. Deposition and characterization of highly energetic Al/MoOx multilayer nano-films

    NASA Astrophysics Data System (ADS)

    Fu, Shuai; Zhu, Ying; Li, Dongle; Zhu, Peng; Hu, Bo; Ye, Yinghua; Shen, Ruiqi

    2013-12-01

    Al/MoOx nanoenergetic multilayer films (nEMFs) were deposited by magnetron deposition method. The samples with bilayer thicknesses of 75 nm and 225 nm were prepared, respectively, and the total thickness is 3 μm. The as-deposited Al/MoOx nEMFs were characterized with varied analytical techniques, including SEM, XRD, XPS and DSC. Results show that the MoOx films are amorphous, and are composed of MoO3, Mo2O5 and MoO2. The values of heat release in samples are 3524 J/g and 2508 J/g, respectively, and the final products are Mo, MoO2, and Al2O3. Finally, the reaction paths and reaction kinetics of Al/MoOx exothermic reactions were discussed.

  8. Growth and luminescent properties of single crystalline films of Ce3+ doped Pr1-xLuxAlO3 and Gd1-xLuxAlO3 perovskites

    NASA Astrophysics Data System (ADS)

    Zorenko, Yu; Gorbenko, V.; Zorenko, T.; Voznyak, T.; Riva, F.; Douissard, P. A.; Martin, T.; Fedorov, A.; Suchocki, A.; Zhydachevskii, Ya.

    2017-01-01

    The paper is dedicated to development of UV emitting scintillating screens for microimaging applications based on the single crystalline films (SCFs) of Ce doped Gd1-xLuxAlO3 and Pr1-xLuxAlO3 (x=0-1) multicomponent perovskites grown onto YAlO3 (YAP) substrates using the liquid phase epitaxy (LPE) method with the objective to improve the X-ray stopping power. Recently Riva et al. [1] have reported that the full set of GdxLu1-xAlO3 SCFs with x values in x=0-1.0 range can be crystallized on YAP substrates using this technique. We report here that PrxLu1-xAlO3 SCFs with x values in x=0-0.5 range can be grown also by the LPE method from PbO-B2O3 flux onto the same YAP substrates. The structural quality of the films was studied using X-ray diffraction. The optical properties of Ce3+ doped of Gd1-xLuxAlO3 and Pr1-xLuxAlO3 (x=0-1) multicomponent perovskite films, studied by traditional spectroscopic methods, such as absorption, cathodoluminescence, photoluminescence and light yield measurements under α-particles excitation, are also reported in this work. We have shown that Pb2+ flux related impurity has significantly larger influence on the light yield of Pr0.5Lu0.5AlO3:Ce, GdAlO3:Ce and Gd0.5Lu0.5AlO3:Ce SCFs in comparison with the YAP:Ce and LuAlO3:Ce counterparts grown onto YAP substrates.

  9. Electronic state of Er in sputtered AlN:Er films determined by magnetic measurements

    SciTech Connect

    Narang, V.; Seehra, M. S.; Korakakis, D.

    2014-12-07

    The optoelectronic and piezoelectric properties of AlN:Er thin films have been of great recent interest for potential device applications. In this work, the focus is on the electronic state of Er in AlN:Er thin films prepared by reactive magnetron sputtering on (001) p-type Si substrate. X-ray diffraction shows that Er doping expands the lattice and the AlN:Er film has preferential c-plane orientation. To determine whether Er in AlN:Er is present as Er metal, Er{sub 2}O{sub 3}, or Er{sup 3+} substituting for Al{sup 3+}, detailed measurements and analysis of the temperature dependence (2 K–300 K) of the magnetization M at a fixed magnetic field H along with the M vs. H data at 2 K up to H = 90 kOe are presented. The presence of Er{sub 2}O{sub 3} and Er metal is ruled out since their characteristic magnetic transitions are not observed in the AlN:Er sample. Instead, the observed M vs. T and M vs. H variations are consistent with Er present as Er{sup 3+} substituting for Al{sup 3+} in AlN:Er at a concentration x = 1.08% in agreement with x = 0.94% ± 0.20% determined using x-ray photoelectron spectroscopy (XPS). The larger size of Er{sup 3+} vs. Al{sup 3+}explains the observed lattice expansion of AlN:Er.

  10. Electron stimulated oxidation of Al(111) in H2O vapor: Dipole orientation effects in the Al2O3 thin film

    NASA Astrophysics Data System (ADS)

    Popova, I.; Zhukov, V.; Yates, J. T.; Chen, J. G.

    1999-12-01

    The electron stimulated oxidation of Al(111) using H2O(g) as a source of oxygen has been investigated at 300 K using near edge x-ray absorption fine structure (NEXAFS) and Auger electron spectroscopy. Irradiation with electrons (100 eV, 50 μA/cm2) produced thick Al2O3 film layers (up to 15 Å), compared to the films grown thermally (4 Å) by the same water exposure. A preferential normal orientation of the O-Al bonds was found for the films grown by the electron assisted process, causing the O K-edge NEXAFS spectra to depend on the incident angle of the polarized x-ray beam. In contrast, little polarization of the O-Al bonds was found for the case of Al2O3 films grown by thermal oxidation in H2O(g).

  11. Enhancement of photoinduced electrical properties of Al-doped ZnO/BiFeO3 layered thin films prepared by chemical solution deposition

    NASA Astrophysics Data System (ADS)

    Katayama, Takeshi; Sakamoto, Wataru; Yuitoo, Isamu; Takeuchi, Teruaki; Hayashi, Koichiro; Yogo, Toshinobu

    2015-10-01

    Polycrystalline BiFeO3 and Al-doped ZnO/BiFeO3 bilayered thin films were prepared on Pt/TiOx/SiO2/Si substrates by chemical solution deposition. Their photoinduced electrical properties under blue light irradiation were characterized. The rapid on/off response of the photocurrent to light in unpoled BiFeO3 (BFO) and Al-doped ZnO/BiFeO3 (AZO/BFO) thin films was demonstrated. The AZO/BFO layered film exhibited an approximately triple-digit larger photocurrent in comparison with a BFO single-layer film. This is attributable to the photoexcited carrier generation effect at the interface between AZO (n-type) and BFO (p-type) films. Furthermore, in the AZO/BFO layered structure, the direction of the internal bias electric field caused by the space charge distribution in the unpoled BFO film is the same as that of the built-in electric field by forming a p-n junction of AZO and BFO layers. Photovoltaic properties were also improved by fabricating such a layered film. On the other hand, when the placement of BFO to AZO was reversed, the photoelectric current decreased to approximately one-tenth of that of the BFO single-layer film. In the BFO/AZO film, the internal electric field at the p-n junction between BFO and AZO is considered to have an orientation opposite to the self-bias field formed in the BFO film.

  12. Al/CdSe/GaSe/C resonant tunneling thin film transistors

    NASA Astrophysics Data System (ADS)

    Qasrawi, A. F.; Kayed, T. S.; Elsayed, Khaled A.

    2017-02-01

    An Al/CdSe/GaSe/C thin film transistor device was prepared by the physical vapor deposition technique at a vacuum pressure of 10-5 mbar. The x-ray diffraction measurements demonstrated the polycrystalline nature of the surface of the device. The dc current-voltage characteristics recorded for the Al/CdSe/C and Al/CdSe/GaSe/C channels displayed a resonant tunneling diode features during the forward and reverse voltage biasing, respectively. In addition, the switching current ratio of the Al/CdSe/C increased from 18.6 to 9.62×103 as a result of the GaSe deposition on the CdSe surface. Moreover, the alternating electrical signal analyses in the frequency range of 1.0 MHz to 1.8 GHz, showed some remarkable properties of negative resistance and negative capacitance spectra of the Al/CdSe/GaSe/C thin film transistors. Two distinct resonance-antiresonance phenomena in the resistance spectra and one in the capacitance spectra were observed at 0.53, 1.04 and 1.40 GHz for the Al/CdSe/C channel, respectively. The respective resonating peak positions of the resistance spectra shift to 0.38 and 0.95 GHz when GaSe is interfaced with CdSe. These features of the thin film transistors are promising for use in high quality microwave filtering circuits and also for use as ultrafast switches.

  13. Electro-acoustic sensors based on AlN thin film: possibilities and limitations

    NASA Astrophysics Data System (ADS)

    Wingqvist, Gunilla

    2011-06-01

    The non-ferroelectric polar wurtzite aluminium nitride (AlN) material has been shown to have potential for various sensor applications both utilizing the piezoelectric effect directly for pressure sensors or indirectly for acoustic sensing of various physical, chemical and biochemical sensor applications. Especially, sputter deposited AlN thin films have played a central role for successful development of the thin film electro-acoustic technology. The development has been primarily driven by one device - the thin film bulk acoustic resonator (FBAR or TFBAR), with its primary use for high frequency filter applications for the telecom industry. AlN has been the dominating choice for commercial application due to compatibility with the integrated circuit technology, low acoustic and dielectric losses, high acoustic velocity in combination with comparably high (but still for some applications limited) electromechanical coupling. Recently, increased piezoelectric properties (and also electromechanical coupling) in the AlN through the alloying with scandium nitride (ScN) have been identified both experimentally and theoretically. Inhere, the utilization of piezoelectricity in electro-acoustic sensing will be discussed together with expectation on acoustic FBAR sensor performance with variation in piezoelectric material properties in the parameter space around AlN due to alloying, in view of the ScxAl1-xN (0

  14. Transparent conductive Al-doped ZnO thin films grown at room temperature

    SciTech Connect

    Wang Yuping; Lu Jianguo; Bie Xun; Gong Li; Li Xiang; Song Da; Zhao Xuyang; Ye Wenyi; Ye Zhizhen

    2011-05-15

    Aluminum-doped ZnO (ZnO:Al, AZO) thin films were prepared on glass substrates by dc reactive magnetron sputtering from a Zn-Al alloy target at room temperature. The effects of the Ar-to-O{sub 2} partial pressure ratios on the structural, electrical, and optical properties of AZO films were studied in detail. AZO films grown using 100:4 to 100:8 Ar-to-O{sub 2} ratio result in acceptable quality films with c-axis orientated crystals, uniform grains, 10{sup -3} {Omega} cm resistivity, greater than 10{sup 20} cm{sup -3} electron concentration, and high transmittance, 90%, in the visible region. The lowest resistivity of 4.11x10{sup -3} {Omega} cm was obtained under the Ar-to-O{sub 2} partial pressure ratio of 100:4. A relatively strong UV emission at {approx}3.26 eV was observed in the room-temperature photoluminescence spectrum. X-ray photoelectron spectroscopy analysis confirmed that Al was introduced into ZnO and substitutes for Zn and doped the film n-type.

  15. In situ spectroscopic ellipsometry growth studies on the Al-doped ZnO films deposited by remote plasma-enhanced metalorganic chemical vapor deposition

    SciTech Connect

    Volintiru, I.; Creatore, M.; Sanden, M. C. M. van de

    2008-02-01

    In situ spectroscopic ellipsometry (SE) was applied to study the pyramidlike and pillarlike growth of Al doped ZnO (AZO) films deposited by means of remote plasma-enhanced metalorganic chemical vapor deposition for transparent conductive oxide applications. Real time SE studies in the visible region allowed discerning between the two growth modes by addressing the time evolution of the bulk and surface roughness layer thickness. While the pillarlike mode is characterized by a constant growth rate, a slower rate in the initial stage (up to 150-200 nm film thickness), compared to the bulk, is observed for the growth of pyramidlike AZO films. The two modes differ also in terms of surface roughness development: a saturation behavior is observed for film thickness above 150-200 nm in the case of the pyramidlike films, while a slow linear increase with film thickness characterizes the pillarlike mode. By extending the SE analysis of the AZO films to the near infrared region, valuable information about the in grain properties could be extracted: excellent in grain mobility values, i.e., larger than 100 and 50 cm{sup 2}/V s, are determined for the pyramidlike and pillarlike AZO layers, respectively. The comparison between the outcome of the in situ real time SE studies and the ex situ electrical and chemical characterization highlights the limitations in the electron transport occurring in both types of films and allows one to address routes toward further improvement in AZO conductivity.

  16. Growth of nanostructured Cu-Al-O film deposited on porous aluminium oxide

    NASA Astrophysics Data System (ADS)

    Park, Y.; Ko, H.; Shim, I.-B.; Kim, C. S.; Kouh, T.

    2010-03-01

    Anodic aluminium oxide has been gaining much attention due to the formation of a highly ordered porous structure, and this self-ordered structure is very appealing as an alternate method for fabricating various nanostructures and devices. On top of this porous aluminium oxide substrate prepared by two-step anodization technique, we have RF-sputtered Cu-Al-O thin films from a single-phase CuAlO 2 target at room temperature. These films show the formation of a highly ordered array of clusters on the nucleation sites provided by the porous substrate with their sizes increasing with film thickness, following the hexagonal pattern underneath. The corresponding surface coverage of the film on the substrate is proportional to the square of film thickness, which can be understood with a simple two-dimensional disk model. Our study suggests that the underlying structure of the anodic aluminium oxide substrate plays a crucial role on the growth of nanostructured thin films and affects the detailed growth mechanism.

  17. AlCu alloy films prepared by the thermal diffusion technique

    SciTech Connect

    Oliva, A.I.; Corona, J.E.; Sosa, V.

    2010-07-15

    100-nm thick films of Al{sub 1-x}Cu{sub x} alloys were prepared on glass substrates by thermal diffusion technique. The Cu atomic concentration was varied from 10% to 90%. Alloys were prepared at different temperatures into a vacuum oven with Argon atmosphere. Two thermal processes were used: i) heating the film at 400 deg. C in a single step, and ii) heating the films in sequential steps at 100, 200, 300 and 400 deg. C. Morphology, electrical resistivity, and crystalline orientation of the alloys were studied. The electrical resistivity and surface roughness of the alloys were found to depend strongly on the atomic composition and the diffusion temperature. However, we did not find differences between samples prepared under the two thermal processes. Alloys prepared with x = 0.6 and x = 0.1-0.3 as Cu at concentration exhibited values on electrical resistivity and surface roughness lower than pure Al. Different phases of the Al{sub 1} {sub -} {sub x}Cu{sub x} films were observed as a function of Cu concentration showing a good agreement with the AlCu phase diagram.

  18. Charged vacancy induced enhanced piezoelectric response of reactive assistive IBSD grown AlN thin films

    NASA Astrophysics Data System (ADS)

    Sharma, Neha; Rath, Martando; Ilango, S.; Ravindran, T. R.; Ramachandra Rao, M. S.; Dash, S.; Tyagi, A. K.

    2017-01-01

    Piezoelectric response of AlN thin films was investigated in a AlN/Ti/Si(1 0 0) layer structure prepared by ion beam sputter deposition (IBSD) in reactive assistance of N+/\\text{N}2+ ions. The samples were characterized for their microstructure, piezoelectric response and charged defects using high resolution x-ray diffraction (HR-XRD), piezo force microscopy (PFM) and photoluminescence (PL) spectroscopy respectively. Our results show that the films are highly textured along the a-axis and charged native point defects are present in the microstructure. Phase images of these samples obtained from PFM show that the films are predominantly N-polar. The measured values of piezoelectric coefficient d 33(eff) for these samples are as high as 206  ±  20 pm V-1 and 668  ±  60 pm V-1 calculated by piezo response loop for AlN films of a thickness of 235 nm and 294 nm respectively. A mechanism for high d 33(eff) values is proposed with a suitable model based on the charged defects induced enhanced polarization in the dielectric continuum of AlN.

  19. Structural and mechanical characterization of Al/Al2O3 nanotube thin film on TiV alloy

    NASA Astrophysics Data System (ADS)

    Sarraf, M.; Zalnezhad, E.; Bushroa, A. R.; Hamouda, A. M. S.; Baradaran, S.; Nasiri-Tabrizi, B.; Rafieerad, A. R.

    2014-12-01

    In this study, the fabrication and characterization of Al/Al2O3 nanotubular arrays on Ti-6Al-4V substrate were carried out. To this end, aluminum thin films were deposited as a first coating layer by direct current (DC) magnetron sputtering with the coating conditions of 300 W, 150 °C and 75 V substrate bias voltage. Al2O3 nanotube array as a second layer was grown on the Al layer by electrochemical anodisation at the constant potential of 20 V within different time periods in an electrolyte solution. For annealing the coated substrates, plasma treatment (PT) technique was utilized under various conditions to get the best adhesion strength of coating to the substrate. To characterize the coating layers, micro scratch test, Vickers hardness and field emission of scanning electron microscopy (FESEM) were used. Results show that after the deposition of pure aluminum on the substrate the scratch length, load and failure point were 794.37 μm, 1100 mN and 411.43 μm, respectively. After PT, the best adhesion strength (2038 mN) was obtained at RF power of 60 W. With the increase of the RF power up to 80 W, a reduction in adhesion strength was observed (1525.22 mN). From the microstructural point of view, a homogenous porous structure with an average pore size of 40-60 nm was formed after the anodisation for 10-45 min. During PT, the porous structure was converted to dense alumina layer when the RF power rose from 40 to 80 W. This led to an increase in hardness value from 2.7 to 3.4 GPa. Based on the obtained data, the RF power of 60 W was the optimum condition for plasma treatment of Al/Al2O3 nanotubular arrays on Ti-6Al-4V substrate.

  20. Electronic structure and electrical transport in ternary Al-Mg-B films prepared by magnetron sputtering

    SciTech Connect

    Yan, C.; Qian, J. C.; He, B.; Ng, T. W.; Zhang, W. J.; Bello, I.; Jha, S. K.; Zhou, Z. F.; Li, K. Y.; Klemberg-Sapieha, J. E.; Martinu, L.

    2013-03-25

    Nanostructured ternary Al-Mg-B films possess high hardness and corrosion resistance. In the present work, we study their electronic structure and electrical transport. The films exhibit semiconducting characteristics with an indirect optical-bandgap of 0.50 eV, as deduced from the Tauc plots, and a semiconductor behavior with a Fermi level of {approx}0.24 eV below the conduction band. Four-probe and Hall measurements indicated a high electrical conductivity and p-type carrier mobility, suggesting that the electrical transport is mainly due to hole conduction. Their electrical properties are explained in terms of the film nanocomposite microstructure consisting of an amorphous B-rich matrix containing AlMgB{sub 14} nanoparticles.

  1. Anomalous resistivity upturn in epitaxial L21-Co2MnAl films

    NASA Astrophysics Data System (ADS)

    Zhu, L. J.; Zhao, J. H.

    2017-02-01

    Despite of the great scientific and technology interest, highly ordered full-Heusler L21-Co2MnAl films have remained a big challenge in terms of the availability and the electrical transport. Here we report the controllable growth and the intriguing transport behavior of epitaxial L21-Co2MnAl films, which exhibit a low-temperature (T) resistivity upturn with a pronounced T1/2 dependence, a robust independence of magnetic fields, and a close relevance to structural disorder. The resistivity upturn turns out to be qualitatively contradictory to weak localization, particle-particle channel electron-electron interaction (EEI), and orbital two-channel Kondo effect, leaving a three-dimensional particle-hole channel EEI the most likely physical source. Our result highlights a considerable tunability of the structural and electronic disorder of magnetic films by varying growth temperature, affording unprecedented insights into the origin of the resistivity upturn.

  2. Anomalous resistivity upturn in epitaxial L21-Co2MnAl films.

    PubMed

    Zhu, L J; Zhao, J H

    2017-02-20

    Despite of the great scientific and technology interest, highly ordered full-Heusler L21-Co2MnAl films have remained a big challenge in terms of the availability and the electrical transport. Here we report the controllable growth and the intriguing transport behavior of epitaxial L21-Co2MnAl films, which exhibit a low-temperature (T) resistivity upturn with a pronounced T(1/2) dependence, a robust independence of magnetic fields, and a close relevance to structural disorder. The resistivity upturn turns out to be qualitatively contradictory to weak localization, particle-particle channel electron-electron interaction (EEI), and orbital two-channel Kondo effect, leaving a three-dimensional particle-hole channel EEI the most likely physical source. Our result highlights a considerable tunability of the structural and electronic disorder of magnetic films by varying growth temperature, affording unprecedented insights into the origin of the resistivity upturn.

  3. Anomalous resistivity upturn in epitaxial L21-Co2MnAl films

    PubMed Central

    Zhu, L. J.; Zhao, J. H.

    2017-01-01

    Despite of the great scientific and technology interest, highly ordered full-Heusler L21-Co2MnAl films have remained a big challenge in terms of the availability and the electrical transport. Here we report the controllable growth and the intriguing transport behavior of epitaxial L21-Co2MnAl films, which exhibit a low-temperature (T) resistivity upturn with a pronounced T1/2 dependence, a robust independence of magnetic fields, and a close relevance to structural disorder. The resistivity upturn turns out to be qualitatively contradictory to weak localization, particle-particle channel electron-electron interaction (EEI), and orbital two-channel Kondo effect, leaving a three-dimensional particle-hole channel EEI the most likely physical source. Our result highlights a considerable tunability of the structural and electronic disorder of magnetic films by varying growth temperature, affording unprecedented insights into the origin of the resistivity upturn. PMID:28218300

  4. A reversible bipolar WORM device based on AlOxNy thin film with Al nano phase embedded

    NASA Astrophysics Data System (ADS)

    Zhu, W.; Li, J.; Zhang, L.; Hu, X. C.

    2017-03-01

    An Al-rich AlOxNy thin film based reversible Write-Once-Read-Many-Times (WORM) memory device with MIS structure could transit from high resistance state (HRS, ∼1011 Ω) to low resistance state (LRS, ∼105 Ω) by sweeping voltage up to ∼20 V. The first switching could be recorded as writing process for WORM device which may relate to conductive path are formed through the thin film. The conductive path should be formed by both Al nano phase and oxygen vacancies. Among of them, Al nano phases are not easy to move, but oxygen vacancies could migrate under high E-field or at high temperature environment. Such conductive path is not sensitive to charging effect after it formed, but it could be broken by heating effect, which may relate to the migration of excess Al ions and oxygen vacancies at high temperature. After baking LRS (ON state) WORM device at 200 °C for 2 min, the conductivity will decrease to HRS which indicates conductive path is broken and device back to HRS (OFF state) again. This phenomenon could be recorded as recovery process. Both writing and recovery process related to migration of oxygen vacancies and could be repeated over 10 times in this study. It also indicates that there is no permanent breakdown occurred in MIS structured WORM device operation. We suggest that this conductive path only can be dissolved by a temperature sensitive electro-chemical action. This WORM device could maintain at LRS over 105 s with on-off ratio over 4 orders.

  5. Zn/Al complex-SWCNT ink for transparent and conducting homogeneous films by scalable bar coating method

    NASA Astrophysics Data System (ADS)

    Kukobat, Radovan; Hayashi, Takuya; Matsuda, Takafumi; Sunaga, Motoo; Sakai, Toshio; Futamura, Ryusuke; Kaneko, Katsumi

    2016-04-01

    It is shown that the viscosity of SWCNT inks is essential to produce highly homogeneous SWCNT films on the PET substrate with bar coating method. The Zn/Al complex-aided SWCNT ink has a viscosity threshold of 1.30 mPa s for the preparation of homogeneous films. The local flows of the film are suppressed above this viscosity, allowing homogeneous film formation. The Zn/Al complex dispersant can be easily removed from SWCNTs coated on PET by 1 M HNO3, giving a pure SWCNT film with the sheet resistance of 150 ohm/sq and transmittance of 90% at 550 nm immediately after HNO3 treatment.

  6. Fabrication of highly transparent Al-ion-implanted ZnO thin films by metal vapor vacuum arc method

    NASA Astrophysics Data System (ADS)

    Lee, Han; Sivashanmugan, Kundan; Kao, Chi-Yuan; Liao, Jiunn-Der

    2017-03-01

    In this study, we utilized the metal vapor vacuum arc technique to implant vaporized aluminum (Al) ions in zinc oxide (ZnO) thin films. By adjusting the ion implantation dose and operational parameters, the conductivity and optical properties of the ZnO thin film can be controlled. The electrical sheet resistance of Al-ion-implanted ZnO decreased from 3.02 × 107 to 3.03 × 104 Ω/sq, while the transparency of the film was mostly preserved (91.5% at a wavelength of 550 nm). The ZnO thin-film Young’s modulus significantly increased with increasing Al ion dose.

  7. Transparent oxygen impermeable AlO x thin films on polycarbonate deposited by reactive ion beam sputtering

    NASA Astrophysics Data System (ADS)

    Seong, Jin-Wook; Kim, Sang-Mun; Choi, Daiwon; Yoon, K. H.

    2005-08-01

    The AlO x thin films were deposited on the polycarbonate by reactive ion beam sputtering (RIBS) at different oxygen partial pressures where the AlO x thin film with O/Al ratio of 1.5 was formed when oxygen partial pressure increased from 4 × 10 -5 to 2 × 10 -4 Torr. As a result, oxygen transmission rate (OTR) of the barrier significantly decreased from 24 cm 3/m 2 day to around 2 cm 3/m 2 day with increase in oxygen partial pressure. Optical transmittances of the films were in the 86-88% range at 550 nm versus 89% for the pure polycarbonate film.

  8. Effect of radio frequency magnetron sputtering power on structural and optical properties of Ti6Al4A thin films

    NASA Astrophysics Data System (ADS)

    Khalaf, Mohammed K.; Al-Taay, H. F.; Ali, Dawood S.

    2017-03-01

    In this research, the effects of target sputtering power on the structure and optical properties of radio frequency (RF) sputtered Ti6Al4V films were investigated. Different sputtering RF powers were used to produce different thicknesses of Ti6Al4V thin films. From the X-ray diffraction, it was found that the Ti6A14V films had polycrystalline cubic and hexagonal structures and increased films crystallinity and crystalline size with increasing the sputtering power. Atomic forces microscopy (AFM) gave us a nanometric film character, films homogeneity, and surfaces roughness. A higher degree of roughness and average grain size with increasing RF power was exhibited. Band gap and refractive index of Ti6Al4V thin films varied with sputtering RF powers.

  9. Electrical, optical, and electronic properties of Al:ZnO films in a wide doping range

    SciTech Connect

    Valenti, Ilaria; Valeri, Sergio; Perucchi, Andrea; Di Pietro, Paola; Lupi, Stefano; Torelli, Piero

    2015-10-28

    The combination of photoemission spectroscopies, infrared and UV-VIS absorption, and electric measurements has allowed to clarify the mechanisms governing the conductivity and the electronic properties of Al-doped ZnO (AZO) films in a wide doping range. The contribution of defect-related in-gap states to conduction has been excluded in optimally doped films (around 4 at. %). The appearance of gap states at high doping, the disappearance of occupied DOS at Fermi level, and the bands evolution complete the picture of electronic structure in AZO when doped above 4 at. %. In this situation, compensating defects deplete the conduction band and increase the electronic bandgap of the material. Electrical measurements and figure of merit determination confirm the high quality of the films obtained by magnetron sputtering, and thus allow to extend their properties to AZO films in general.

  10. Electrical, optical, and electronic properties of Al:ZnO films in a wide doping range

    NASA Astrophysics Data System (ADS)

    Valenti, Ilaria; Benedetti, Stefania; di Bona, Alessandro; Lollobrigida, Valerio; Perucchi, Andrea; Di Pietro, Paola; Lupi, Stefano; Valeri, Sergio; Torelli, Piero

    2015-10-01

    The combination of photoemission spectroscopies, infrared and UV-VIS absorption, and electric measurements has allowed to clarify the mechanisms governing the conductivity and the electronic properties of Al-doped ZnO (AZO) films in a wide doping range. The contribution of defect-related in-gap states to conduction has been excluded in optimally doped films (around 4 at. %). The appearance of gap states at high doping, the disappearance of occupied DOS at Fermi level, and the bands evolution complete the picture of electronic structure in AZO when doped above 4 at. %. In this situation, compensating defects deplete the conduction band and increase the electronic bandgap of the material. Electrical measurements and figure of merit determination confirm the high quality of the films obtained by magnetron sputtering, and thus allow to extend their properties to AZO films in general.

  11. Effect of substrate temperature on structural, morphological and optical properties of deposited Al/ZnO films

    NASA Astrophysics Data System (ADS)

    Ghorannevis, Z.; Hosseinnejad, M. T.; Habibi, M.; Golmahdi, P.

    2015-12-01

    Al-doped ZnO (Al/ZnO) thin film is a promising alternative to an ITO electrode in solar cell applications due to its low price, non-toxicity and other promising properties. In this paper, Al/ZnO thin films at different substrate temperatures were deposited on glass substrates as transparent conducting (TCO) films by DC magnetron sputtering. The effect of substrate temperature on the structural, morphological and optical properties of Al/ZnO films was investigated. X-ray diffraction (XRD) analysis suggests that crystal structure characteristics of synthesized thin films depend on the substrate temperature. The structure growth and variation in surface roughness with increasing substrate temperature are revealed by scanning electron microscope (SEM) micrographs and atomic force microscopy (AFM) analyses. Thicknesses of the deposited films were also examined by surface profiler. Moreover, obtained results from optical transmission patterns revealed that with the increasing substrate temperature, optical transmittance decreases.

  12. The chemisorption of H2O, HCOOH and CH3COOH on thin amorphous films of Al2O3

    NASA Technical Reports Server (NTRS)

    Lewis, B. F.; Weinberg, W. H.; Mosesman, M.

    1974-01-01

    Investigation of the irreversible chemisorption of water, formic acid and acetic acid on a thin amorphous aluminum oxide film, using inelastic tunneling spectroscopy. All of the tunnel junctions employed were Al-Al2O3-Pb junctions with the adsorbate on the Al2O3 surface between the Al2O3 and the Pb electrode. The results obtained include the finding that all Al2O3 surfaces prepared by oxidation of Al have free CH groups present on them.

  13. Mechanisms of lighting enhancement of Al nanoclusters-embedded Al-doped ZnO film in GaN-based light-emitting diodes

    SciTech Connect

    Lee, Hsin-Ying; Chou, Ying-Hung; Lee, Ching-Ting

    2010-01-15

    Aluminum (Al)-doped ZnO (AZO) films with embedded Al nanoclusters were proposed and utilized to enhance the light output power and maximum operation current of GaN-based light-emitting diodes (LEDs). The AZO films were sputtered using ZnO and Al targets in a magnetron cosputtering system. With Al dc power of 7 W and ZnO 100 W ac power, the electron concentration of 4.1x10{sup 20} cm{sup -3}, electron mobility of 16.2 cm{sup 2}/V s, and resistivity of 7.2x10{sup -4} {Omega} cm were obtained for the deposited AZO film annealed at 600 deg. C for 1 min in a N{sub 2} ambient. As verified by a high resolution transmission electron microscopy, the deposited AZO films with embedded Al nanoclusters were clearly observed. A 35% increase in light output power of the GaN-based LEDs with Al nanoclusters-embedded AZO films was realized compared with the conventional LEDs operated at 500 mA. It was verified experimentally that the various characteristics of GaN-based LEDs including the antireflection, light scattering, current spreading, and the light extraction efficiency in light emission could be significantly enhanced with the use of Al nanoclusters-embedded AZO films.

  14. Mechanical properties of AlxGa1-xN films with high Al composition grown on AlN/sapphire templates

    NASA Astrophysics Data System (ADS)

    Xu, F. J.; Shen, B.; Wang, M. J.; Xu, J.; Lu, L.; Miao, Z. L.; Yang, Z. J.; Qin, Z. X.; Zhang, G. Y.; Lin, B.; Bai, S. L.

    2007-08-01

    Mechanical properties of AlxGa1-xN thin films with high Al composition (0.33⩽x⩽1) grown on AlN/sapphire templates have been investigated by means of the nanoindentation technique. It is found that Young's modulus E of the films increases with increasing Al composition. In addition, it is also found that the occurrence of the clear and sudden displacement discontinuity ("pop-in") in the plastic deformation (PD) process is dependent on Al composition in AlxGa1-xN films. The higher Al composition results in less occurrence of the pop-in in the PD process of the films. With increasing Al composition, it is believed that the increase of the bond strength and the decrease of the lattice mismatch between AlxGa1-xN films and AlN/sapphire templates result in greater resistance to the formation of dislocations, which is responsible for the pop-in behavior in AlxGa1-xN films.

  15. Interfacial design and structure of protein/polymer films on oxidized AlGaN surfaces

    NASA Astrophysics Data System (ADS)

    Gupta, Samit K.; Wu, Hao-Hsuan; Kwak, Kwang J.; Casal, Patricia; Nicholson, Theodore R., III; Wen, Xuejin; Anisha, R.; Bhushan, Bharat; Berger, Paul R.; Lu, Wu; Brillson, Leonard J.; Lee, Stephen Craig

    2011-01-01

    Protein detection using biologically or immunologically modified field-effect transistors (bio/immunoFETs) depends on the nanoscale structure of the polymer/protein film at sensor interfaces (Bhushan 2010 Springer Handbook of Nanotechnology 3rd edn (Heidelberg: Springer); Gupta et al 2010 The effect of interface modification on bioFET sensitivity, submitted). AlGaN-based HFETs (heterojunction FETs) are attractive platforms for many protein sensing applications due to their electrical stability in high osmolarity aqueous environments and favourable current drive capabilities. However, interfacial polymer/protein films on AlGaN, though critical to HFET protein sensor function, have not yet been fully characterized. These interfacial films are typically comprised of protein-polymer films, in which analyte-specific receptors are tethered to the sensing surface with a heterobifunctional linker molecule (often a silane molecule). Here we provide insight into the structure and tribology of silane interfaces composed of one of two different silane monomers deposited on oxidized AlGaN, and other metal oxide surfaces. We demonstrate distinct morphologies and wear properties for the interfacial films, attributable to the specific chemistries of the silane monomers used in the films. For each specific silane monomer, film morphologies and wear are broadly consistent on multiple oxide surfaces. Differences in interfacial film morphology also drive improvements in sensitivity of the underlying HFET (coincident with, though not necessarily caused by, differences in interfacial film thickness). We present a testable model of the hypothetical differential interfacial depth distribution of protein analytes on FET sensor interfaces with distinct morphologies. Empirical validation of this model may rationalize the actual behaviour of planar immunoFETs, which has been shown to be contrary to expectations of bio/immunoFET behaviour prevalent in the literature for the last 20 years

  16. Characterization and Fabrication of ZnO Nanowires Grown on AlN Thin Film

    SciTech Connect

    Yousefi, Ramin; Kamaluddin, Burhanuddin; Ghoranneviss, Mahmood; Hajakbari, Fatemeh

    2009-07-07

    In this paper, we report ZnO nanowires grown on AlN thin film deposited on glass as substrate by physical vapour deposition. The temperature of substrates was kept between 600 deg. C and 500 deg. C during the growth. The typical average diameters of the obtained nanowires on substrate at 600 deg. C and 500 deg. C was about 57 nm and 22 nm, respectively with several micrometers in lengths. X-ray diffraction and Auger spectroscopy results showed Al diffused from AlN thin film into ZnO nanowires for sample at high temperature zone. In the photoluminescence spectra two emission bands appeared, one related to ultraviolet emission with a strong peak at 380-382 nm, and another related to deep level emission with a weak peak at 510 nm.

  17. Industrial Application of Thin Films (TiAl)N Deposited on Thermo-Wells

    SciTech Connect

    Velez, G.; Jaramillo, S.; Arango, Y. C.; Devia, D.; Quintero, J.; Devia, A.

    2006-12-04

    The thermo-well is formed by two layers, one layer is a ceramic and the other layer is anviloy (comprised tungsten). They are used to coat the thermocouple in the control temperature system during the Aluminum-Silicon alloy melting process. After two weeks of continuous work at 750 deg. C of temperature (the alloy temperature), a high wear in this material is observed, affecting the ceramic. (TiAl)N thin films are deposited directly on the anviloy substrates by the PAPVD (Plasma Assisted Physics Vapor Deposition) in arc pulsed technique, using a TiAl target in a mono-vaporizer system, composed by a reactor and a power controlled system. Two opposite electrodes are placed into the reactor and discharge is produced by a controlled power system. The XRD (X-ray diffraction) patterns show the presence of the (TiAl)N thin film peaks. The morphological characteristics are studied by the scanning probe microscopy (SPM)

  18. Growing oriented AlN films on sapphire substrates by plasma-enhanced atomic layer deposition

    NASA Astrophysics Data System (ADS)

    Tarala, V. A.; Altakhov, A. S.; Ambartsumov, M. G.; Martens, V. Ya.

    2017-01-01

    The possibility of growing oriented AlN films on Al2O3 substrates at temperatures below 300°C by plasma-enhanced atomic layer deposition was examined. The samples were subjected to X-ray phase analysis and ellipsometry. It was demonstrated that the refraction index of films deposited with plasma exposures longer than 20 s was 2.03 ± 0.03. The (0002) and (0004) reflections at 2Θ angles of 35.7° and 75.9° were present in the X-ray diffraction patterns of these samples. These reflections are typical of the hexagonal AlN polytype. The full width at half maximum of the rocking curve of reflection (0002) in the best sample was 162 ± 11 arcsec.

  19. Current transport mechanisms in plasma-enhanced atomic layer deposited AlN thin films

    SciTech Connect

    Altuntas, Halit E-mail: biyikli@unam.bilkent.edu.tr; Ozgit-Akgun, Cagla; Donmez, Inci; Biyikli, Necmi E-mail: biyikli@unam.bilkent.edu.tr

    2015-04-21

    Here, we report on the current transport mechanisms in AlN thin films deposited at a low temperature (i.e., 200 °C) on p-type Si substrates by plasma-enhanced atomic layer deposition. Structural characterization of the deposited AlN was carried out using grazing-incidence X-ray diffraction, revealing polycrystalline films with a wurtzite (hexagonal) structure. Al/AlN/ p-Si metal-insulator-semiconductor (MIS) capacitor structures were fabricated and investigated under negative bias by performing current-voltage measurements. As a function of the applied electric field, different types of current transport mechanisms were observed; i.e., ohmic conduction (15.2–21.5 MV/m), Schottky emission (23.6–39.5 MV/m), Frenkel-Poole emission (63.8–211.8 MV/m), trap-assisted tunneling (226–280 MV/m), and Fowler-Nordheim tunneling (290–447 MV/m). Electrical properties of the insulating AlN layer and the fabricated Al/AlN/p-Si MIS capacitor structure such as dielectric constant, flat-band voltage, effective charge density, and threshold voltage were also determined from the capacitance-voltage measurements.

  20. Al2O3 thin films by plasma-enhanced chemical vapour deposition using trimethyl-amine alane (TMAA) as the Al precursor

    NASA Astrophysics Data System (ADS)

    Chryssou, C. E.; Pitt, C. W.

    We report the low temperature (200-300 °C) deposition of uniform, amorphous Al2O3 thin films by plasma-enhanced chemical vapour deposition (PECVD) using trimethyl-amine alane (TMAA) as the Al precursor. The thin films were deposited on both Si and quartz silica (SiO2) substrates. Deposition rates were typically 60 Åmin-1 keeping the TMAA temperature constant at 45 °C. The deposited Al2O3 thin films were stoichiometric alumina with low carbon contamination (0.7-1.3 At%). The refractive index ranged from 1.54 to 1.62 depending on the deposition conditions. The deposition rate was studied as a function of both the RF power and the substrate temperature. The structure and the surface of the deposited Al2O3 thin films were studied using X-ray diffraction, atomic force microscopy (AFM) and scanning electron microscopy (SEM).

  1. Boat-like Au nanoparticles embedded mesoporous γ-Al2O3 films: an efficient SERS substrate

    NASA Astrophysics Data System (ADS)

    Dandapat, Anirban; Pramanik, Sourav; Bysakh, Sandip; De, Goutam

    2013-07-01

    Boat-like Au nanoparticles (NPs) have been synthesized within the mesoporous γ-Al2O3 films. First, mesoporous γ-Al2O3 film was prepared using aluminum alkoxide derived boehmite sol in the presence of CTAB as structure directing agent. The film was heat-treated at 500 °C to obtain γ-Al2O3 film with an average pore diameter of 4.3 nm. HAuCl4 solution was then soaked into the porous film followed by heat-treatment at 500 °C to generate Au NPs. The blue-colored films so obtained were characterized by UV-visible spectroscopy, grazing incidence X-ray diffraction, FESEM, and TEM studies. FESEM and TEM studies reveal the formation boat-like Au NPs in γ-Al2O3 film matrix. Cross-sectional FESEM shows the thickness of the films to be 2.2 μm. These nanocomposite films were used as a unique surface-enhanced Raman scattering (SERS) substrate for easy detection of low concentration (10-8 M) analyte (methylene blue) molecule. Boat-like shape of Au NPs have several edges and junctions that contain high density of hotspots to exhibit very high SERS signals. Due to such shape of Au NPs, the films also show strong absorption in the visible-NIR region that would extend the use of the films in heat-absorbing and biomedical applications.

  2. Microstructure and chemical wet etching characteristics of AlN films deposited by ac reactive magnetron sputtering

    SciTech Connect

    Tanner, S. M.; Felmetsger, V. V.

    2010-01-15

    The influence of the surface morphology of a molybdenum underlayer on the crystallinity and etchability of reactively sputtered c-axis oriented aluminum nitride thin films was investigated. Atomic force microscopy, scanning electron microscopy, transmission electron microscopy, high resolution x-ray diffraction, and defect selective chemical etching were used to characterize the microstructure of the Mo and AlN films. 1000 nm thick films of AlN with a full width at half maximum (FWHM) of the x-ray rocking curve ranging from 1.1 deg. to 1.9 deg. were deposited on 300 nm thick Mo underlayers with a FWHM of around 1.5 deg. The Ar pressure during the Mo deposition had a critical effect on the Mo film surface morphology, affecting the structure of the subsequently deposited AlN films and, hence, their wet etching characteristics. AlN films deposited on Mo sputtered at a relatively high pressure could not be etched completely, while AlN films deposited on low pressure Mo etched more easily. Postdeposition etching of the Mo surface in Ar rf discharge prior to deposition of the AlN film was found to influence the formation of AlN residuals that were difficult to etch. Optimal rf plasma etching conditions were found, which minimized the formation of these residuals.

  3. Effects of Al concentration on microstructural characteristics and electrical properties of Al-doped ZnO thin films on Si substrates by atomic layer deposition.

    PubMed

    Lee, Ju Ho; Lee, Jae-Won; Hwang, Sooyeon; Kim, Sang Yun; Cho, Hyung Koun; Lee, Jeong Yong; Park, Jin-Seong

    2012-07-01

    Al-doped ZnO (AZO) thin films with various Al concentrations were synthesized on Si(001) substrates with native oxide layers by atomic layer deposition process. The effects of the Al concentration on the microstructural characteristics of the AZO thin films grown at 250 degrees C and the correlation between their microstructural characteristics and electrical properties of the AZO thin films were investigated by AFM, XRD, HRTEM and Hall measurements. The XRD and HRTEM results revealed that the crystallinity and electrical properties of the undoped ZnO thin films were enhanced by 2.48 at% Al doping. However, 12.62 at% Al doping induced the deterioration of their crystallinity and electrical properties due to the formation of nano-sized metallic Al clusters and randomly oriented ZnO-based nano-crystals. To enhance the electrical properties of the AZO thin films while maintaining their crystallinity and electrical properties, a moderate Al concentration has to be chosen under the solubility limit of Al in ZnO.

  4. Temperature-dependent growth of LaAlO3 films on YBa2CuO7 C-axis films for multilayer structures

    NASA Astrophysics Data System (ADS)

    Hawley, M. E.; Houlton, R. J.; Raistrick, I. A.; Garzon, F. H.

    Fabrication of ultra smooth films, free of micro-shorts, is essential to the development of High Temperature Superconducting (HTS) thin film devices. One such example is a SNS junction consisting of two HTS layers separated by a uniformly smooth continuous barrier material. Other schemes under consideration require multilayer structures of up to 5 - 7 epitaxially grown layers of complex oxide material. Successful fabrication of such devices necessitates understanding the epitaxial growth of polycrystalline oxide films on polycrystalline film templates. Toward this end we have developed a set of deposition parameters that produce high quality epitaxial insulating layers suitable for HTS device applications. All films in this study were grown by off-axis RF magnetron sputter deposition. LaAlO3 films were deposited over MgO grown YBa2Cu3O7 (YBCO) c-axis thin films at temperatures ranging from 200 to 700C and on virgin substrates at 600C. Atomic Force Microscopy, eddy current measurements, and x-ray diffraction techniques were used to monitor the effect of growth conditions on the resulting film crystallinity, nanostructure, and electrical properties. Ex-situ interrupted growth characterization of these materials has yielded new insight into the processes that control the growth mechanism and resulting microstructure. All films were polycrystalline. Below 600C, LaAlO3 films were not epitaxial while films grown at 650C showed some zone group axes(200) orientation. The shape of the underlying YBCO film is most clearly evident for the film grown at 400C. Surface roughness depended on the appearance of crystals on the film surface. The superconducting properties of the underlying YBCO film required O2 annealing prior to deposition of the LaAlO3 layer.

  5. Single crystalline AlN film formed by direct nitridation of sapphire using aluminum oxynitride buffer

    NASA Astrophysics Data System (ADS)

    Nakao, Wataru; Fukuyama, Hiroyuki

    2003-12-01

    A noble method forming single crystalline AlN films has been developed as a new substrate for blue/UV light emitters. Sapphire substrates have been nitrided by appropriate CO-N 2 gas mixtures saturated with graphite based on the chemical potential diagram of the Al-N-O-C system. The nitrided surface of sapphire consists of consecutive layers of AlN and γ-aluminum oxynitride (γ-ALON) with low-level dislocation density, where the γ-ALON layer spontaneously forms as an equilibrium phase and acts as a buffer. The lattice mismatch between sapphire substrate and AlN layer has been effectively reduced by using the γ-ALON buffer, which significantly attributes to the growth of single crystalline AlN.

  6. Spontaneous lateral phase separation of AlInP during thin film growth and its effect on luminescence

    SciTech Connect

    Mukherjee, Kunal; Fitzgerald, Eugene A.; Norman, Andrew G.; Akey, Austin J.; Buonassisi, Tonio

    2015-09-21

    The occurrence of spontaneous lateral phase separation during thin film growth of Al{sub x}In{sub 1−x}P by metal-organic chemical vapor deposition was investigated using a combination of transmission electron microscopy and atom probe tomography to obtain a quantitative view of this phenomenon. An anisotropic and coherent composition modulation was observed in the nearly lattice-matched films deposited below 750 °C with a quasi-linear amplification with thickness that was inversely proportional to the growth temperature. The periodicity of the modulation increased exponentially with the growth temperature. A comparison of photoluminescence from phase separated and homogenous direct band gap Al{sub x}In{sub 1−x}P deposited on metamorphic In{sub y}Ga{sub 1−y}As graded buffers showed a lowering of peak-emission energy in accordance with the atom probe compositional characterization without any degradation in luminous intensity. Additionally, indications of carrier trapping in the low band gap regions were observed even at room-temperature. While some of these results are in qualitative agreement with theoretical models of kinetic instability in unstrained alloy growth in the literature, significant discrepancies remain.

  7. Growth dynamics of reactive-sputtering-deposited AlN films

    SciTech Connect

    Auger, M.A.; Vazquez, L.; Sanchez, O.; Jergel, M.; Cuerno, R.; Castro, M.

    2005-06-15

    We have studied the surface kinetic roughening of AlN films grown on Si(100) substrates by dc reactive sputtering within the framework of the dynamic scaling theory. Films deposited under the same experimental conditions for different growth times were analyzed by atomic force microscopy and x-ray diffraction. The AlN films display a (002) preferred orientation. We have found two growth regimes with a crossover time of 36 min. In the first regime, the growth dynamics is unstable and the films present two types of textured domains, well textured and randomly oriented, respectively. In contrast, in the second regime the films are homogeneous and well textured, leading to a relative stabilization of the surface roughness characterized by a growth exponent {beta}=0.37{+-}0.03. In this regime a superrough scaling behavior is found with the following exponents: (i) Global exponents: roughness exponent {alpha}=1.2{+-}0.2 and {beta}=0.37{+-}0.03 and coarsening exponent 1/z=0.32{+-}0.05; (ii) local exponents: {alpha}{sub loc}=1, {beta}{sub loc}=0.32{+-}0.01. The differences between the growth modes are found to be related to the different main growth mechanisms dominating their growth dynamics: sticking anisotropy and shadowing, respectively.

  8. Developing new manufacturing methods for the improvement of AlF3 thin films.

    PubMed

    Lee, Cheng-Chung; Liao, Bo-Huei; Liu, Ming-Chung

    2008-05-12

    In this research, the plasma etching mechanism which is applied to deposit AlF(3) thin films has been discussed in detail. Different ratios of O(2) gas were injected in the sputtering process and then the optical properties and microstructure of the thin films were examined. The best optical quality and smallest surface roughness was obtained when the AlF(3) thin films were coated with O(2):CF(4) (12 sccm:60 sccm) at 30 W sputtering power. To increase the deposition rate for industrial application, the sputtering power was increased to 200 W with the best ratio of O(2)/CF(4) gas. The results show that the deposition rate at 200W sputtering power was 7.43 times faster than that at 30 W sputtering power and the extinction coefficients deposited at 200 W are less than 6.8 x 10(-4) at the wavelength range from 190 nm to 700 nm. To compare the deposition with only CF(4) gas at 200 W sputtering power, the extinction coefficient of the thin films improve from 4.4 x 10(-3) to 6 x 10(-4) at the wavelength of 193 nm. In addition, the structure of the film deposited at 200W was amorphous-like with a surface roughness of 0.8 nm.

  9. Half-metallicity in highly L21-ordered CoFeCrAl thin films

    NASA Astrophysics Data System (ADS)

    Jin, Y.; Kharel, P.; Valloppilly, S. R.; Li, X.-Z.; Kim, D. R.; Zhao, G. J.; Chen, T. Y.; Choudhary, R.; Kashyap, A.; Skomski, R.; Sellmyer, D. J.

    2016-10-01

    The structural, magnetic, and electron-transport properties of Heusler-ordered CoFeCrAl thin films are investigated experimentally and theoretically. The films, sputtered onto MgO and having thicknesses of about 100 nm, exhibit virtually perfect single-crystalline epitaxy and a high degree of L21 chemical order. X-ray diffraction and transmission-electron microscopy show that the structure of the films is essentially of the L21 Heusler type. The films are ferrimagnetic, with a Curie temperature of about 390 K, and a net moment of 2 μB per formula unit. The room temperature resistivity is 175 μΩ cm; the carrier concentration and mobility determined from the low temperature (5 K) measurement are 1.2 × 1018 cm-3 and 33 cm2/V s, respectively. In contrast to the well-investigated Heusler alloys such as Co2(Cr1-xFex)Al, the CoFeCrAl system exhibits two main types of weak residual A2 disorder, namely, Co-Cr disorder and Fe-Cr disorder, the latter conserving half-metallicity. Point-contact Andreev reflection yields a lower bound for the spin polarization, 68% at 1.85 K, but our structural and magnetization analyses suggest that the spin polarization at the Fermi level is probably higher than 90%. The high resistivity, spin polarization, and Curie temperature are encouraging in the context of spin electronics.

  10. Atomic scale analysis of phase formation and diffusion kinetics in Ag/Al multilayer thin films

    NASA Astrophysics Data System (ADS)

    Aboulfadl, Hisham; Gallino, Isabella; Busch, Ralf; Mücklich, Frank

    2016-11-01

    Thin films generally exhibit unusual kinetics leading to chemical reactions far from equilibrium conditions. Binary metallic multilayer thin films with miscible elements show some similar behaviors with respect to interdiffusion and phase formation mechanisms. Interfacial density, lattice defects, internal stresses, layer morphologies and deposition conditions strongly control the mass transport between the individual layers. In the present work, Ag/Al multilayer thin films are used as a simple model system, in which the effects of the sputtering power and the bilayer period thickness on the interdiffusion and film reactions are investigated. Multilayers deposited by DC magnetron sputtering undergo calorimetric and microstructural analyses. In particular, atom probe tomography is extensively used to provide quantitative information on concentration gradients, grain boundary segregations, and reaction mechanisms. The magnitude of interdiffusion was found to be inversely proportional to the period thickness for the films deposited under the same conditions, and was reduced using low sputtering power. Both the local segregation at grain boundaries as well as pronounced non-equilibrium supersaturation effects play crucial roles during the early stages of the film reactions. For multilayers with small periods of 10 nm supersaturation of the Al layers with Ag precedes the polymorphic nucleation and growth of the hcp γ-Ag2Al phase. In larger periods the γ phase formation is triggered at junctions between grain boundaries and layers interfaces, where the pathway to heterogeneous nucleation is local supersaturation. Other Ag-rich phases also form as intermediate phases due to asymmetric diffusion rates of parent phases in the γ phase during annealing.

  11. Comparative studies of CdS, CdS:Al, CdS:Na and CdS:(Al-Na) thin films prepared by spray pyrolysis

    NASA Astrophysics Data System (ADS)

    Yılmaz, S.; Atasoy, Y.; Tomakin, M.; Bacaksız, E.

    2015-12-01

    In the present study, the spray pyrolysis technique was used to prepare pure CdS, 4 at.% Al-doped CdS, 4 at.% Na-doped CdS and (4 at.% Al, 4 at.% Na)-co-doped CdS thin films. It was found from X-ray diffraction data that all the specimens showed hexagonal wurtzite structure with the preferred orientation of (101). Scanning electron microscopy results indicated that 4 at.% Al-doping caused a grain growth in the morphology of CdS thin films whereas the 4 at.% Na-doping and (4 at.% Al, 4 at.% Na)-co-doping led to porous structure with small grains. The band gap value of CdS thin films increased to 2.42 eV after 4 at.% Al-doping. However, it reduced to 2.30 eV and 2.08 eV for 4 at.% Na-doping and (4 at.% Al, 4 at.% Na)-co-doping, respectively. The room temperature photoluminescence measurements illustrated that the peak intensity of CdS thin films enhanced with 4 at.% Al-doping while 4 at.% Na-doping and (4 at.% Al, 4 at.% Na)-co-doping caused a decline in the intensity. The maximum carrier concentration and minimum resistivity were obtained for 4 at.% Al-doped CdS thin films, which is associated with the grain growth. Furthermore, (4 at.% Al, 4 at.% Na)-co-doping gave rise to a slight reduction in the carrier concentration and a slight increment in the resistivity. As a result, it can be said that 4 at.% Al-doped CdS thin films exhibited the best electrical and optical properties, which is important for the opto-electronic applications.

  12. Scintillating screens based on the LPE grown Tb3Al5O12:Ce single crystalline films

    NASA Astrophysics Data System (ADS)

    Zorenko, Yuriy; Douissard, Paul-Antoine; Martin, Thierry; Riva, Federica; Gorbenko, Vitaliy; Zorenko, Tetiana; Paprocki, Kazimierz; Iskalieva, Aizhan; Witkiewicz, Sandra; Fedorov, Alexander; Bilski, Paweł; Twardak, Anna

    2017-03-01

    We report in this work the creation of new heavy and efficient Tb3Al5O12:Ce (TbAG:Ce) single crystalline film (SCF) scintillators, grown by LPE method from PbO-B2O3 based flux onto Y3Al5O12 (YAG) and Gd3Ga2.5Al2.5O12 (GAGG) substrates, for different optoelectronic applications. The luminescent and scintillation properties of the TbAG:Ce SCF screens, grown onto different types of substrates, are studied and compared with the properties of the Lu3Al5O12:Ce (LuAG:Ce) and YAG:Ce SCF counterparts. TbAG:Ce SCFs show very high scintillation light yield (LY) under α-particles excitation, which overcomes by 30% the LY of high-quality LuAG:Ce SCF samples. In comparison with YAG:Ce and LuAG:Ce SCFs, TbAG:Ce SCF screens show also significantly lower afterglow (up to 10-4 level at X-ray burst duration of 0.1 s), which is comparable with the afterglow level of the best samples of LSO:Ce, Tb SCFs typically being used now for microimaging. Together with a high light output of X-ray excited luminescence, such extremely low afterglow of TbAG:Ce SCF is a very good reason for future development of scintillating screens based on the mentioned garnet. We also introduce the possibility to create new types of ;film-substrate; hybrid scintillators using the LPE method for simultaneous registration of different components of ionizing radiation and microimaging based on the TbAG:Ce SCF and GAGG:Ce substrates.

  13. Effect of film thickness on structural and mechanical properties of AlCrN nanocompoite thin films deposited by reactive DC magnetron sputtering

    NASA Astrophysics Data System (ADS)

    Prakash, Ravi; Kaur, Davinder

    2016-05-01

    In this study, the influence of film thickness on the structural, surface morphology and mechanical properties of Aluminum chromium nitride (AlCrN) thin films has been successfully investigated. The AlCrN thin films were deposited on silicon (100) substrate using dc magnetron reactive co-sputtering at substrate temperature 400° C. The structural, surface morphology and mechanical properties were studied using X-ray diffraction, field-emission scanning electron microscopy and nanoindentation techniques respectively. The thickness of these thin films was controlled by varying the deposition time therefore increase in deposition time led to increase in film thickness. X-ray diffraction pattern of AlCrN thin films with different deposition time shows the presence of (100) and (200) orientations. The crystallite size varies in the range from 12.5 nm to 36.3 nm with the film thickness due to surface energy minimization with the higher film thickness. The hardness pattern of these AlCrN thin films follows Hall-Petch relation. The highest hardness 23.08 Gpa and young modulus 215.31 Gpa were achieved at lowest grain size of 12.5 nm.

  14. Kerr rotation and perpendicular magnetic anisotropy of CoCr films with Al ultrathin interlayers and single-layer CoCr films

    NASA Astrophysics Data System (ADS)

    Hirata, Toyoaki; Takahashi, Takakazu; Hoshi, Youichi; Naoe, Masahiko

    1991-11-01

    The Co81Cr19/Al multilayered films were prepared by using the plasma-free sputtering apparatus. The specimen films with the thicknesses of Co81Cr19 and Al layers lCo-Cr and lAl of 50-170 and 7-14 Å, respectively, were investigated for the Kerr rotation angle θK and the reflectance R of the multilayered films with total thickness of 1500 Å. Films with lCo-Cr and lAl of 138 and 7 Å, respectively, had a θK of 0.21° and R of 0.7 which is larger than Co81Cr19 single-layer films prepared by conventional sputtering where θK and R are 0.036° and 0.4-0.5, respectively. These results indicate that the films were entirely homogeneous, that is, the surface and interior of the films may be almost the same for composition, microstructure and magnetic properties. Consequently, the Co81Cr19 thin films with Al ultrathin interlayers may be useful for microcrystalline magneto-optical media with a high C/N ratio.

  15. Al substituted Ba ferrite films with high coercivity and excellent squareness for low noise perpendicular recording layer

    NASA Astrophysics Data System (ADS)

    Feng, J.; Matsushita, N.; Watanabe, K.; Nakagawa, S.; Naoe, M.

    1999-04-01

    Al substituted BaM (Al-BaM) ferrite films with composition of BaAlxFe12-xO19 (x=0,1,2) were deposited using facing targets sputtering apparatus on SiOx/Si wafers with a Pt seed layer. A postannealing process is necessary to crystallize the films. It was confirmed that the substrate temperature Ts is also one of the important parameters for the magnetic properties of the postannealed films. Al-BaM ferrite films exhibit the Ts dependence of magnetic properties different from that of simple BaM ones. With increase of the Al content x in Al-BaM ferrite films, 4πMs decreased, while Hc and the anisotropy field HA increased. It was found that acicular shape grains formed more easily in Al-BaM ferrite films than in simple BaM ones. The squareness S⊥ increased largely by substitution of Al for Fe. The Al-BaM ferrite films with high Hc⊥ (˜3 kOe) and large S⊥(˜0.9) may be applicable as perpendicular magnetic recording layers with low noise level.

  16. Structural and optical properties of ZnO:Al thin films prepared by RF magnetron sputtering

    NASA Astrophysics Data System (ADS)

    Gao, Yanqing; Ma, Jianhua; Huang, Zhiming; Hou, Yun; Wu, Jing; Chu, Junhao

    2009-07-01

    ZnO:Al (AZO) films have potential applications in ultraviolet detecting devices. The structural and optical properties of the AZO films are presented. Highly c axis oriented wurtzite phase AZO films are prepared on quartz substrate by rf sputtering method. The optical constants and the thickness of the AZO films are determined by fitting the measured transmission spectra with Tauc-Lorentz (TL) model. The refractive index n increases as the photon energy increases, and reaches the maximum of 2.50 at 3.66 eV, beyond which the refractive index n decreases with further increasing of photon energy. The peak of the refractive index n corresponds to the optical band gap of the AZO films, which is associated with interband transition between the valence and conduction bands. The extinction coefficient k also increases with the enhancement of the photon energy, and a strong absorption peak with maximum of 1.10 is prominent. The absorption peak due to an electronic transition accords with the peak transition energy E0 (3.79 eV) is obtained by TL model. The energy E0 of this model corresponds to the Penn gap, where the strong absorption of the material took place. By fitting the absorption coefficient, the optical band gap 3.62 eV of the film is evaluated. Based on the Tauc's power law, the optical band gap of the films is proved as a direct interband transition between the valence and conduction bands. This enhanced band gap compared with ZnO (3.37 eV) correlates to the Burstein-Moss band filling effect due to Al doping.

  17. Structural and Optical Properties of Thick Freestanding AlN Films Prepared by Hydride Vapor Phase Epitaxy

    DTIC Science & Technology

    2012-01-01

    electronic device applications, optoe- lectronic devices are the driving force of AlN based material research. Deep ultraviolet laser diodes and light...films deposited on Si and SiC substrates, removed from the substrates by etching techniques, were used as seeds to grow AlN boules with a diameter...ranging from 0.5 to 1.75 in. Selected wafers were employed as substrates to deposit epitaxial AlN films with improved structural and optical properties

  18. Structure and thermoelectric properties of Al-doped ZnO films prepared by thermal oxidization under high magnetic field

    NASA Astrophysics Data System (ADS)

    Liu, Shiying; Peng, Sunjuan; Ma, Jun; Li, Guojian; Qin, Xuesi; Li, Mengmeng; Wang, Qiang

    2017-04-01

    This paper studies the effects of high magnetic field (HMF) on the structure, optical and thermoelectric properties of the doped ZnO thin films. The results show that both Al dopant and application of HMF can affect the crystal structure, surface morphology, elemental distribution and so on. The particles of the thin films become small and regular by doping Al. The ZnO films oxidized from the Au/Zn bilayer have needle structure. The ZnO films oxidized from the Au/Zn-Al bilayer transform to spherical from hexagonal due to the application of HMF. The transmittance decreases with doping Al because of the opaque of Al element and decreases with the application of HMF due to the dense structure obtained under HMF. Electrical resistivity (ρ) of the ZnO films without Al decreases with increasing measurement temperature (T) and is about 1.5 × 10-3 Ω·m at 210 °C. However, the ρ of the Al-doped ZnO films is less than 10-5 Ω·m. The Seebeck coefficient (S) of the films oxidized from the Au/Zn-Al films reduces with increasing T. The S values oxidized under 0 T and 12 T conditions are 2.439 μV/K and -3.415 μV/K at 210 °C, respectively. Power factor reaches the maximum value (3.198 × 10-4 W/m·K2) at 210 °C for the film oxidized under 12 T condition. These results indicate that the Al dopant and the application of HMF can be used to control structure and thermoelectric properties of doped ZnO films.

  19. A comparison study of Co and Cu doped MgO diluted magnetic thin films

    NASA Astrophysics Data System (ADS)

    Sarıtaş, S.; ćakıcı, T.; Muǧlu, G. Merhan; Kundakcı, M.; Yıldırım, M.

    2017-02-01

    Transition metal-doped MgO diluted magnetic thin films are appropriate candidates for spintronic applications and designing magnetic devices and sensors. Therefore, MgO:Co and MgO:Cu films were deposited on glass substrates by Chemical Spray Pyrolysis (CSP) method different thin film deposition parameters. Deposited different transition metal doped MgO thin films were compared in terms of optic and structural properties. Comparison optic analysis of the films was investigated spectral absorption and transmittance measurements by UV-Vis double beam spectrophotometer technique. Comparison structural analysis of the thin films was examined by using XRD, Raman Analysis, SEM, EDX and AFM techniques. The transition metal-doped; MgO:Co and MgO:Cu thin films maybe have potential applications in spintronics and magnetic data storage.

  20. Resonant indirect excitation of Gd{sup 3+} in AlN thin films

    SciTech Connect

    Ishizu, Yuta; Tsuji, Kazuma; Harada, Yukihiro; Kita, Takashi; Chigi, Yoshitaka; Nishimoto, Tetsuro; Tanaka, Hiroyuki; Kobayashi, Mikihiro; Ishihara, Tsuguo; Izumi, Hirokazu

    2014-05-07

    We studied the efficient indirect excitation of Gd{sup 3+} ions in AlN thin films. C-axis oriented polycrystalline thin films of Al{sub 0.997}Gd{sub 0.003}N/AlN were grown on fused silica substrates using a reactive radio-frequency magnetron sputtering technique. The intra-orbital electron transition in Gd{sup 3+} showed a narrow luminescence line at 3.9 eV. The photoluminescence (PL) excitation (PLE) spectrum exhibited a peak originating from efficient indirect energy transfer from the band edge of AlN to Gd{sup 3+} ions. The PLE peak shifted and the PL intensity showed a dramatic change when the AlN band gap was varied by changing the temperature. Energy scanning performed by changing the band-gap energy of AlN with temperature revealed several resonant channels of energy transfer into the higher excited states of Gd{sup 3+}.

  1. Hydrogen induced passivation of Si interfaces by Al2O3 films and SiO2/Al2O3 stacks

    NASA Astrophysics Data System (ADS)

    Dingemans, G.; Beyer, W.; van de Sanden, M. C. M.; Kessels, W. M. M.

    2010-10-01

    The role of hydrogen in Si surface passivation is experimentally identified for Al2O3 (capping) films synthesized by atomic layer deposition. By using stacks of SiO2 and deuterated Al2O3, we demonstrate that hydrogen is transported from Al2O3 to the underlying SiO2 already at relatively low annealing temperatures of 400 °C. This leads to a high level of chemical passivation of the interface. Moreover, the thermal stability of the passivation up to 800 °C was significantly improved by applying a thin Al2O3 capping film on the SiO2. The hydrogen released from the Al2O3 film favorably influences the passivation of Si interface defects.

  2. Perpendicular magnetic anisotropy in Mn{sub 2}CoAl thin film

    SciTech Connect

    Sun, N. Y.; Zhang, Y. Q.; Che, W. R.; Shan, R.; Fu, H. R.; You, C. Y.

    2016-01-15

    Heusler compound Mn{sub 2}CoAl (MCA) is attracting more attentions due to many novel properties, such as high resistance, semiconducting behavior and suggestion as a spin-gapless material with a low magnetic moment. In this work, Mn{sub 2}CoAl epitaxial thin film was prepared on MgO(100) substrate by magnetron sputtering. The transport property of the film exhibits a semiconducting-like behavior. Moreover, our research reveals that perpendicular magnetic anisotropy (PMA) can be induced in very thin Mn{sub 2}CoAl films resulting from Mn-O and Co-O bonding at Mn{sub 2}CoAl/MgO interface, which coincides with a recent theoretical prediction. PMA and low saturation magnetic moment could lead to large spin-transfer torque with low current density in principle, and thus our work may bring some unanticipated Heusler compounds into spintronics topics such as the domain wall motion and the current-induced magnetization reversal.

  3. In situ stress evolution during and after sputter deposition of Al thin films.

    PubMed

    Pletea, M; Koch, R; Wendrock, H; Kaltofen, R; Schmidt, O G

    2009-06-03

    The stress, growth, and morphology evolution of Al thin films up to 300 nm thick, sputter deposited at a constant rate of 0.04 nm s(-1) onto thermally oxidized Si(100) substrates have been investigated for various sputter pressures in the range from 0.05 to 6 Pa. The stress evolution has been studied during and after the film deposition by means of in situ substrate curvature measurements using an optical two-beam deflection method. In order to obtain insight into the mechanisms of stress generation and relaxation, the microstructure of the films was investigated by scanning electron microscopy, focused-ion-beam microscopy, and atomic force microscopy. The stress evolution during the early stage of deposition of films is consistent with the Volmer-Weber growth mode known for metals with high adatom mobility. For thicker films, the compressive stress increases in the sputter pressure range of 0.05-0.5 Pa, whereas at even higher sputter pressures a transition from compressive to tensile stress takes place. This transition is correlated with a change from a relatively dense to a more porous microstructure characterized by decreasing mass density and increasing electrical resistivity with increasing sputter pressure. The dependence of the stress and microstructure on the sputter pressure can be consistently understood through a combination of the stress mechanisms for vapor and sputter deposited films proposed in the literature.

  4. Oxidation of nano-multilayered AlTiSiN thin films between 600 and 1000 degrees C in air.

    PubMed

    Lee, Jae Chun; Kim, Sun Kyu; Nguyen, Thuan Dinh; Lee, Dong Bok

    2011-07-01

    Multilayered AlTiSiN films with a composition of 32.0Al-12.4Ti-4.9Si-50.7N (at.%) were deposited on a steel substrate in a nitrogen atmosphere by cathodic arc plasma deposition. The films consisted of crystalline approximately 8 nm-thick AISiN nanolayers that originated from the Al-Si target and approximately 3 nm-thick TiN nanolayers that originated from the Ti target. Their oxidation characteristics were studied between 600 and 1000 degrees C for up to 20 h in air. They displayed good oxidation resistance due to the formation of a thin, dense Al2O3 surface scale below which an (Al2O3, TiO2, SiO2)-intermixed inner scale existed. They oxidized slower than TiN films because protective Al2O3-rich scales formed on the surface. However, they oxidized faster than CrN films because impure Al2O3 scale formed on the AlTiSiN film. Their oxidation progressed primarily by the outward diffusion of nitrogen and substrate elements, combined with the inward transport of oxygen that gradually reacted with Al, Ti, and Si in the film.

  5. Interaction of oxygen with samarium on Al{sub 2}O{sub 3} thin film grown on Ni{sub 3}Al(111)

    SciTech Connect

    Cheng, Dingling; Xu, Qian E-mail: jfzhu@ustc.edu.cn; Han, Yong; Ye, Yifan; Pan, Haibin; Zhu, Junfa E-mail: jfzhu@ustc.edu.cn

    2014-03-07

    The interaction between oxygen and samarium (Sm) on the well-ordered thin Al{sub 2}O{sub 3} film grown on Ni{sub 3}Al(111) has been investigated by X-ray photoelectron spectroscopy and synchrotron radiation photoemission spectroscopy. At Sm coverage higher than one monolayer, exposure of oxygen to the Sm films at room temperature leads to the formation of both samarium peroxide (O{sub 2}{sup 2−}) states and regular samarium oxide (O{sup 2−}) states. By contrast, when exposing O{sub 2} to Sm film less than one monolayer on Al{sub 2}O{sub 3}, no O{sub 2}{sup 2−} can be observed. Upon heating to higher temperatures, these metastable O{sub 2}{sup 2−} states dissociate, supplying active O atoms which can diffuse through the Al{sub 2}O{sub 3} thin film to further oxidize the underlying Ni{sub 3}Al(111) substrate, leading to the significant increase of the Al{sub 2}O{sub 3} thin film thickness. Therefore, it can be concluded that Sm, presumably in its peroxide form, acts as a catalyst for the further oxidation of the Ni{sub 3}Al substrate by supplying the active oxygen species at elevated temperatures.

  6. Large magnetization and high Curie temperature in highly disordered nanoscale Fe2CrAl thin films

    NASA Astrophysics Data System (ADS)

    Dulal, Rajendra P.; Dahal, Bishnu R.; Forbes, Andrew; Pegg, Ian L.; Philip, John

    2017-02-01

    We have successfully grown nanoscale Fe2CrAl thin films on polished Si/SiO2 substrates using an ultra-high vacuum deposition with a base pressure of 9×10-10 Torr. The thickness of thin films ranges from 30 to 100 nm. These films exhibit cubic crystal structure with lattice disorder and display ferromagnetic behavior. The Curie temperature is greater than 400 K, which is much higher than that reported for bulk Fe2CrAl. The magnetic moments of the films varies from 2.5 to 2.8 μB per formula unit, which is larger than the reported bulk values. Thus, the disordered nanoscale Fe2CrAl films exhibit strong Fe-Fe exchange interactions through Fe-Cr-Fe and Fe-Al-Fe layers, resulting in both a large magnetization and a high Curie temperature.

  7. Structural and mechanical properties of Al-C-N films deposited at room temperature by plasma focus device

    NASA Astrophysics Data System (ADS)

    Z, A. Umar; R, Ahmad; R, S. Rawat; M, A. Baig; J, Siddiqui; T, Hussain

    2016-07-01

    The Al-C-N films are deposited on Si substrates by using a dense plasma focus (DPF) device with aluminum fitted central electrode (anode) and by operating the device with CH4/N2 gas admixture ratio of 1:1. XRD results verify the crystalline AlN (111) and Al3CON (110) phase formation of the films deposited using multiple shots. The elemental compositions as well as chemical states of the deposited Al-C-N films are studied using XPS analysis, which affirm Al-N, C-C, and C-N bonding. The FESEM analysis reveals that the deposited films are composed of nanoparticles and nanoparticle agglomerates. The size of the agglomerates increases at a higher number of focus deposition shots for multiple shot depositions. Nanoindentation results reveal the variation in mechanical properties (nanohardness and elastic modulus) of Al-C-N films deposited with multiple shots. The highest values of nanohardness and elastic modulus are found to be about 11 and 185 GPa, respectively, for the film deposited with 30 focus deposition shots. The mechanical properties of the films deposited using multiple shots are related to the Al content and C-N bonding.

  8. Work function increase of Al-doped ZnO thin films by B+ ion implantation.

    PubMed

    Hong, Sang-Jin; Heo, Gi-Seok; Park, Jong-Woon; Lee, In-Hwan; Choi, Bum-Ho; Lee, Jong-Ho; Park, Se-Yeon; Shin, Dong-Chan

    2007-11-01

    The work function of an Al-doped ZnO (AZO) thin film can be increased via B+ ion implantation from 3.92 eV up to 4.22 eV. The ion implantation has been carried out with the ion dose of 1 x 10(16) cm(-2) and ion energy of 5 keV. The resistance of the B+ implanted AZO films has been a bit raised, while their transmittance is slightly lowered, compared to those of un-implanted AZO films. These behaviors can be explained by the doping profile and the resultant band diagram. It is concluded that the coupling between the B+ ions and oxygen vacancies would be the main reason for an increase in the work function and a change in the other properties. We also address that the work function is more effectively alterable if the defect density of the top transparent conducting oxide layer can be controlled.

  9. Weak localization in ZnO:Ga and ZnO:Al thin films

    NASA Astrophysics Data System (ADS)

    Reukova, O. V.; Kytin, V. G.; Kulbachinskii, V. A.; Burova, L. I.; Kaul, A. R.; Ulyashin, A. G.

    2014-12-01

    The temperature dependences of the resistivity, magnetoresistance and the Hall effect of ZnO thin films doped with Ga and Al were investigated at low temperatures. According to obtained experimental data the dimensionality of the investigated films with respect to the weak localization theory changes from 2D to 3D with an increase of magnetic field and temperature. To describe the observed negative magnetoresistance under these conditions we derived a new expression for the weak localization correction to the conductivity. It was found that the obtained expression describes magnetoresistance of investigated films much better than all known expressions for negative magnetoresistence related to weak localization. The values of the electron diffusion length during the phase relaxation time of wave function were obtained by fitting of experimental magnetoresistance with derived expression. Obtained values are consistent with the applied approach.

  10. Microstructures and magnetic properties of Co-Al-O granular thin films

    NASA Astrophysics Data System (ADS)

    Ohnuma, M.; Hono, K.; Onodera, H.; Ohnuma, S.; Fujimori, H.; Pedersen, J. S.

    2000-01-01

    The microstructures of Co-Al-O thin films of wide varieties of compositions are studied by transmission electron microscopy and small angle x-ray scattering (SAXS). In the superparamagnetic specimens, high resolution electron microscope images reveal that isolated spherical Co particles are surrounded by an amorphous aluminum oxide matrix. However, in the soft ferromagnetic films, the shape of the Co particles is prolate ellipsoidal. SAXS intensities from the soft magnetic specimens decrease inversely with the wave vector, q, in a low wave-vector region, while an interparticle interference peak is observed for the superparamagnetic specimens. The scattering profiles of the soft magnetic films imply that the Co particles have a cylindrical shape and are randomly oriented. The correlation between the magnetic properties and the microstructures is discussed.

  11. Luminescent properties of Al2O3:Ce single crystalline films under synchrotron radiation excitation

    NASA Astrophysics Data System (ADS)

    Zorenko, Yu.; Zorenko, T.; Gorbenko, V.; Savchyn, V.; Voznyak, T.; Fabisiak, K.; Zhusupkalieva, G.; Fedorov, A.

    2016-09-01

    The paper is dedicated to study the luminescent and scintillation properties of the Al2O3:Ce single crystalline films (SCF) grown by LPE method onto saphire substrates from PbO based flux. The structural quality of SCF samples was investigated by XRD method. For characterization of luminescent properties of Al2O3:Ce SCFs the cathodoluminescence spectra, scintillation light yield (LY) and decay kinetics under excitation by α-particles of Pu239 source were used. We have found that the scintillation LY of Al2O3:Ce SCF samples is relatively large and can reach up to 50% of the value realized in the reference YAG:Ce SCF. Using the synchrotron radiation excitation in the 3.7-25 eV range at 10 K we have also determined the basic parameters of the Ce3+ luminescence in Al2O3 host.

  12. Ultra-hard amorphous AlMgB14 films RF sputtered onto curved substrates

    NASA Astrophysics Data System (ADS)

    Grishin, A. M.; Putrolaynen, V. V.; Yuzvyuk, M. H.

    2017-03-01

    Recently, hard AlMgB14 (BAM) coatings were deposited for the first time by RF magnetron sputtering using a single stoichiometric ceramic target. High target sputtering power and sufficiently short target-to-substrate distance were found to be critical processing conditions. They enabled fabrication of stoichiometric in-depth compositionally homogeneous films with the peak values of nanohardness 88 GPa and Young’s modulus 517 GPa at the penetration depth of 26 nm and, respectively, 35 GPa and 275 GPa at 200 nm depth in 2 µm thick film (Grishin et al 2014 JETP Lett. 100 680). The narrow range of sufficiently short target-to-substrate distance makes impossible to coat non flat specimens. To achieve ultimate BAM films’ characteristics onto curved surfaces we developed two-step sputtering process. The first thin layer is deposited as a template at low RF power that facilitates a layered Frank van der Merwe mode growth of smooth film occurs. The next layer is grown at high RF target sputtering power. The affinity of subsequent flow of sputtered atoms to already evenly condensed template fosters the development of smooth film surface. As an example, we made BAM coating onto hemispherical 5 mm in diameter ball made from a hard tool steel and used as a head of a special gauge. Very smooth (6.6 nm RMS surface roughness) and hard AlMgB14 films fabricated onto commercial ball-shaped items enhance hardness of tool steel specimens by a factor of four.

  13. Microstructural evolution of Al-Cu thin-film conducting lines during post-pattern annealing

    SciTech Connect

    Kang, S.H.; Morris, J.W. , Jr. |

    1997-07-01

    This work reports a statistical analysis of the evolution of polygranular segment lengths during high-temperature annealing of Al(Cu) thin-film interconnects with quasi-bamboo microstructures. To create samples of Al(Cu) lines that could be imaged by transmission electron microscopy without breaking or thinning, the lines were deposited on electron-transparent silicon nitride films (the {open_quotes}silicon nitride window{close_quotes} technique). The microstructures of the lines were studied as a function of annealing time and temperature. In particular, the distribution of polygranular segment lengths was measured. The results show that the longer polyglranular segments are preferentially eliminated during post-pattern annealing. As a consequence, the segment-length distribution narrows monotonically during annealing, and changes in shape. The preferential loss of the longest polygranular segments leads to a dramatic increase in resistance to electromigration failure.

  14. Properties of AlN films deposited by reactive ion-plasma sputtering

    SciTech Connect

    Bert, N. A.; Bondarev, A. D.; Zolotarev, V. V.; Kirilenko, D. A.; Lubyanskiy, Ya. V.; Lyutetskiy, A. V.; Slipchenko, S. O.; Petrunov, A. N.; Pikhtin, N. A. Ayusheva, K. R.; Arsentyev, I. N.; Tarasov, I. S.

    2015-10-15

    The properties of SiO{sub 2}, Al{sub 2}O{sub 3}, and AlN dielectric coatings deposited by reactive ion-plasma sputtering are studied. The refractive indices of the dielectric coatings are determined by optical ellipsometry. It is shown that aluminum nitride is the optimal material for achieving maximum illumination of the output mirror of a semiconductor laser. A crystalline phase with a hexagonal atomic lattice and oxygen content of up to 10 at % is found by transmission electron microscopy in the aluminum-nitride films. It is found that a decrease in the concentration of residual oxygen in the chamber of the reactive ion-plasma sputtering installation makes it possible to eliminate the appearance of vertical pores in the bulk of the aluminum-nitride film.

  15. Microstructure and mechanical properties of thin Al-Si-Ge films

    SciTech Connect

    Kirchner, S.; Kraft, O.; Baker, S.P.; Arzt, E.

    1997-05-01

    The mechanical properties are thought to play an important role in the performance of metallization materials for very large scale integration (VLSI) applications. From recent investigations on bulk materials it is known that Al-Si-Ge alloys can be very efficiently strengthened with only a small amount of the alloying elements. These alloys are potential candidates for future metallizations both because Si and Ge are compatible with the existing semiconductor technology, and because the resistivity is expected to be low. The authors present the first results of detailed characterizations of Al-Si-Ge thin films as a function of sputter conditions and heat treatments. The microstructure was characterized using x-ray diffraction and transmission electron microscopy. The kinetics of precipitation were studied using resistance measurements. Room temperature hardness was investigated using nanoindentation, and the mechanical properties at temperatures up to 240 C were examined using a substrate curvature method. The correlation between precipitate structure and film properties is discussed.

  16. The adsorption of water on Cu2O and Al2O3 thin films

    SciTech Connect

    Deng, Xingyi; Herranz, Tirma; Weis, Christoph; Bluhm, Hendrik; Salmeron, Miquel

    2008-06-27

    The initial stages of water condensation, approximately 6 molecular layers, on two oxide surfaces, Cu{sub 2}O and Al{sub 2}O{sub 3}, have been investigated by using ambient pressure X-ray photoelectron spectroscopy at relative humidity values (RH) from 0 to >90%. Water adsorbs first dissociatively on oxygen vacancies producing adsorbed hydroxyl groups in a stoichiometric reaction: O{sub lattic} + vacancies + H{sub 2}O = 2OH. The reaction is completed at {approx}1% RH and is followed by adsorption of molecular water. The thickness of the water film grows with increasing RH. The first monolayer is completed at {approx}15% RH on both oxides and is followed by a second layer at 35-40% RH. At 90% RH, about 6 layers of H{sub 2}O film have been formed on Al{sub 2}O{sub 3}.

  17. Thermal durability of AZO/Ag(Al)/AZO transparent conductive films

    NASA Astrophysics Data System (ADS)

    Sugimoto, Yukiko; Igarashi, Kanae; Shirasaki, Shinya; Kikuchi, Akihiko

    2016-04-01

    Effects of Al doping on surface morphology, sheet resistance, optical transmission spectra, and thermal durability of a thin Ag layer and AZO/Ag/AZO dielectric/metal/dielectric (DMD) transparent conductive films (TCFs) were investigated. The 1.7 at. % Al doping suppressed the initial island growth of a thin Ag layer and the plasmon resonant absorption dip in the optical transmission spectra. The threshold thickness of percolation conductivity was reduced from 9-10 (pure Al layer) to 5-6 nm (1.7 at. % Al-doped Ag layer). Al doping in the Ag layer improved the thermal durability of AZO/Ag/AZO-DMD TCFs. The threshold temperature for Ag void formation increased from 400 °C (DMD with pure Ag layer) to 600 °C (DMD with a 10.5 at. % Al-doped Ag layer). The optimum annealing temperature increased from 300 °C (DMD with a pure Ag layer) to 500 °C (DMD with a 10.5 at. % Al-doped Ag layer). Maximum figures of merit (FOM) were 0.5 × 10-2 and 1.1 × 10-2 Ω-1 for the DMD with a pure Ag layer and that with a 10.5 at. % Al-doped Ag layer, respectively.

  18. [Preparation of large area Al-ZnO thin film by DC magnetron sputtering].

    PubMed

    Jiao, Fei; Liao, Cheng; Han, Jun-Feng; Zhou, Zhen

    2009-03-01

    Solar cells of p-CIS/n-buffer/ZnO type, where CIS is (CuInS2, CuInSe2 or intermediates, are thin-film-based devices for the future high-efficiency and low-cost photovoltaic devices. As important thin film, the properties of Al-doped ZnO (AZO) directly affect the parameter of the cell, especially for large volume. In the present paper, AZO semiconductor transparent thin film on soda-lime glass was fabricated using cylindrical zinc-aluminum target, which can not only lower the cost of the target but also make the preparation of large area AZO thin film more easily. Using the DC magnet sputtering techniques and rolling target, high utilization efficiency of target was achieved and large area uniform and directional film was realized. An introduction to DC magnet sputtering techniques for large area film fabrication is given. With different measurement methods, such as X-ray diffraction (XRD) and scan electron microscope (SEM), we analyzed large size film's structure, appearance, and electrical and optical characteristics. The XRD spectrum indicated that the AZO film shows well zinc-blende structure with a preferred (002) growth and the c-axis is oriented normal to the substrate plane. The lattice constant is 5.603 9 nm and the mismatch with CdS thin film is only 2 percent. It absolutely satisfied the demand of the GIGS solar cell. The cross-section of the AZO thin film indicates the columnar structure and the surface morphology shows that the crystal size is about 50 nm that is consistent with the result of XRD spectrum. By the optical transmission curve, not only the high transmission rate over 85 percent in the visible spectrum between 400 nm and 700 nm was showed but also the band gap 3.1 eV was estimated. And all these parameters can meet the demand of the large area module of GIGS solar cell. The result is that using alloy target and Ar gas, and controlling the appropriate pressure of oxygen, we can get directional, condensed, uniform, high transmitting rate, low

  19. Epitaxial growth of higher transition-temperature VO2 films on AlN/Si

    NASA Astrophysics Data System (ADS)

    Slusar, Tetiana; Cho, Jin-Cheol; Kim, Bong-Jun; Yun, Sun Jin; Kim, Hyun-Tak

    2016-02-01

    We report the epitaxial growth and the mechanism of a higher temperature insulator-to-metal-transition (IMT) of vanadium dioxide (VO2) thin films synthesized on aluminum nitride (AlN)/Si (111) substrates by a pulsed-laser-deposition method; the IMT temperature is TIMT ≈ 350 K. X-ray diffractometer and high resolution transmission electron microscope data show that the epitaxial relationship of VO2 and AlN is VO2 (010) ‖ AlN (0001) with VO2 [101] ‖ AlN [ 2 1 ¯ 1 ¯ 0 ] zone axes, which results in a substrate-induced tensile strain along the in-plane a and c axes of the insulating monoclinic VO2. This strain stabilizes the insulating phase of VO2 and raises TIMT for 10 K higher than TIMT single crystal ≈ 340 K in a bulk VO2 single crystal. Near TIMT, a resistance change of about four orders is observed in a thick film of ˜130 nm. The VO2/AlN/Si heterostructures are promising for the development of integrated IMT-Si technology, including thermal switchers, transistors, and other applications.

  20. Study on amorphous TiAlN films produced by radiofrequency reactive sputtering

    NASA Astrophysics Data System (ADS)

    Garcia-Gonzalez, L.; Morales-Hernandez, J.; Bartolo-Perez, J. P.; Ceh-Soberanis, O.; Munoz-Saldana, J.; Espinoza-Beltran, F. J.

    2004-06-01

    Using the reactive magnetron rf sputtering technique, we prepared TiAlN films with amorphous structure on Corning glass and steel substrates in a reactive atmosphere of nitrogen and argon using a target of Ti-Al (40/60 wt. %). The average temperature of the substrates was about 25degreesC, with the purpose of obtaining amorphous films. The ratio of partial pressure of nitrogen to argon, P-N/P-Ar, was varied according to these values: 0.14, 0.28, and 0.43; fixing these values during whole the evaporation. Further on, films were prepared introducing nitrogen in periodic pulses with maximum values of P-N/P-Ar approximate to 4.7 during 45 seconds, with fixed periods of 10, 15 and 20 minutes. In all cases amorphous films were obtained, according to X-ray Diffraction. The chemical composition of the samples was measured by electron dispersive spectroscopy, showing a clear dependence with the evaporation conditions. In spite of the amorphous structure of the material, atomic force microscopy measurements showed a surface morphology dependent on the nitrogen content. Additionally, measurements of electronic spectroscopy for chemical analysis and Raman scattering spectroscopy for identification of chemical bonds were carried out. Measurements of mechanical properties of the samples were carried out using nanoindentation and micro-hardness Vicker's tests.

  1. Microstructure control of Al-Cu films for improved electromigration resistance

    DOEpatents

    Frear, D.R.; Michael, J.R.; Romig, A.D. Jr.

    1994-04-05

    A process for the forming of Al-Cu conductive thin films with reduced electromigration failures is useful, for example, in the metallization of integrated circuits. An improved formation process includes the heat treatment or annealing of the thin film conductor at a temperature within the range of from 200 C to 300 C for a time period between 10 minutes and 24 hours under a reducing atmosphere such as 15% H[sub 2] in N[sub 2] by volume. Al-Cu thin films annealed in the single phase region of a phase diagram, to temperatures between 200 C and 300 C have [theta]-phase Al[sub 2] Cu precipitates at the grain boundaries continuously become enriched in copper, due, it is theorized, to the formation of a thin coating of [theta]-phase precipitate at the grain boundary. Electromigration behavior of the aluminum is, thus, improved because the [theta]-phase precipitates with copper hinder aluminum diffusion along the grain boundaries. Electromigration, then, occurs mainly within the aluminum grains, a much slower process. 5 figures.

  2. Microstructure control of Al-Cu films for improved electromigration resistance

    DOEpatents

    Frear, Darrel R.; Michael, Joseph R.; Romig, Jr., Alton D.

    1994-01-01

    A process for the forming of Al-Cu conductive thin films with reduced electromigration failures is useful, for example, in the metallization of integrated circuits. An improved formation process includes the heat treatment or annealing of the thin film conductor at a temperature within the range of from 200.degree. C. to 300.degree. C. for a time period between 10 minutes and 24 hours under a reducing atmosphere such as 15% H.sub.2 in N.sub.2 by volume. Al-Cu thin films annealed in the single phase region of a phase diagram, to temperatures between 200.degree. C. and 300.degree. C. have .theta.-phase Al.sub.2 Cu precipitates at the grain boundaries continuously become enriched in copper, due, it is theorized, to the formation of a thin coating of .theta.-phase precipitate at the grain boundary. Electromigration behavior of the aluminum is, thus, improved because the .theta.-phase precipitates with copper hinder aluminum diffusion along the grain boundaries. Electromigration, then, occurs mainly within the aluminum grains, a much slower process.

  3. Defects in Mg doped (Al,In)GaN thin films and nanostructures

    NASA Astrophysics Data System (ADS)

    Shahedipour-Sandvik, Fatemeh

    2009-03-01

    Development of p-type (Al,In)GaN revolutionized the field of solid state lighting in the way that it was hard to imagine, development and introduction to market of light emitters in short period of time and tremendous amount of progress in other areas that was enabled by such development. Although many studies have been done to understand the defects related to Mg incorporation in epitaxially grown AlInGaN films, there are still many open questions. These include the relationship between the defects (type and density) and Mg incorporated and the electrical property of the film. An interesting open question is how optical characteristics of Mg doped (Al, In) GaN can predict its electrical property. In this presentation, we try to address this question. Recent advances in development of nanostructures based on III-nitrides include growth of high quality GaN nanowires. Although large body of work exists in growth and characterization of Si doped GaN nanowires the report work on Mg doped GaN is scarce. In the present work, we will discuss our recent progress in studying optical and electrical characteristics of Mg doped GaN nanowires and defect stabilization in nanostructure and thin films.[4pt] In collaboration with M. Reshchikov, Department of Physics, Virginia Commonwealth University, Richmond, VA 23284; N. Tripathi, B. J. Messer, and M. Tungare, College of Nanoscale Science and Engineering, UAlbany-State University of New York, Albany, NY 12203

  4. Phase separations of amorphous CoW films during oxidation and reactions with Si and Al

    SciTech Connect

    Wang, S.Q.; Mayer, J.W.

    1989-03-01

    Reactions of thin Co/sub 55/ W/sub 45/ films in contact with Si(100) substrates and aluminum overlayers annealed in vacuum in the temperature ranges of 625--700 /sup 0/C and 500--600 /sup 0/C, respectively, and of thin Co/sub 55/W/sub 45/ films in air from 500 to 600 /sup 0/C were investigated by Rutherford backscattering spectrometry, glancing angle x-ray diffraction, and scanning electron microscope techniques. CoW alloy films were amorphous and have a crystallization temperature of 850 /sup 0/C on SiO/sub 2/ substrates. The compound formed is Co/sub 7/ W/sub 6/. Phase separations were found in all the reactions. A layer of cobalt compounds (CoSi/sub 2/ in Si/CoW, Co/sub 2/ Al/sub 9/ in CoW/Al, and Co/sub 3/ O/sub 4/ in CoW with air) was found to form at the reaction interfaces. In addition, a layer of mainly tungsten compounds (WSi/sub 2/ in Si/CoW, WAl/sub 12/ in CoW/Al, and WO/sub 3/ in CoW with air) was found next to cobalt compound layers, but further away from the reaction interfaces. The reactions started at temperatures comparable to those required for the formation of corresponding tungsten compounds.

  5. Investigation of Al doping concentration effect on the structural and optical properties of the nanostructured CdO thin film

    NASA Astrophysics Data System (ADS)

    Gencer Imer, Arife

    2016-04-01

    Nanostructured aluminium (Al) doped cadmium oxide (CdO) films with highly electrical conductivity and optical transparency have been deposited for the first time on soda-lime glass substrates preheated at 250 °C by ultrasonic spray coating technique. The aluminium dopant content in the CdO film was changed from 0 to 5 at%. The influencing of Al doping on the structural, morphological, electrical and optical properties of the CdO nanostructured films has been investigated. Atomic force microscopy study showed the grain size of the films is an order of nanometers, and it decreases with increase in Al dopant content. All the films having cubic structure with a lattice parameter 4.69 Å were determined via X ray diffraction analysis. The optical band gap value of the films, obtained by optical absorption, was found to increase with Al doping. Electrical studies exhibited mobility, carrier concentration and resistivity of the film strongly dependent on the doping content. It has been evaluated that optical band gap, and grain size of the nanostructured CdO film could be modified by Al doping.

  6. Residual Stress Development in CU Thin Films with and Without AlN Passivation by Cyclic Plane Bending

    NASA Astrophysics Data System (ADS)

    Shinohara, Mitsuhiko; Hanabusa, Takao; Kusaka, Kazuya

    Since the thin film technology is applied to micro-machines, MEMS (micro electro-mechanical system), optical devices and others, the evaluation of mechanical properties in thin films becomes to be important. On the other hand, there are differences in mechanical properties between bulk materials and thin films, but studies in this field have not yet been made enough. The present paper reports on the evaluation of the mechanical properties of Cu thin films with and without AlN passivation layer. Specimens with different thickness of Cu film were subjected to cyclic plane bending fatigue test. Residual stresses developed in the Cu films were measured in a sequence of bending cycles using X-ray diffraction method in order to understand the effect of film thickness and passivation layer on mechanical properties of Cu thin films.

  7. Highly (0001)-oriented Al-doped ZnO polycrystalline films on amorphous glass substrates

    NASA Astrophysics Data System (ADS)

    Nomoto, Junichi; Inaba, Katsuhiko; Osada, Minoru; Kobayashi, Shintaro; Makino, Hisao; Yamamoto, Tetsuya

    2016-09-01

    Very thin aluminum-doped zinc oxide (AZO) films with a well-defined (0001) orientation and a surface roughness of 0.357 nm were deposited on amorphous glass substrates at a temperature of 200 °C by radio frequency magnetron sputtering, which are promising, particularly in terms of orientation evolution, surface roughness, and carrier transport, as buffer layers for the subsequent deposition of highly (0001)-oriented AZO polycrystalline films of 490 nm thickness by direct current (DC) magnetron sputtering. Sintered AZO targets with an Al2O3 content of 2.0 wt. % were used. DC magnetron sputtered AZO films on bare glass substrates showed a mixed (0001) and the others crystallographic orientation, and exhibited a high contribution of grain boundary scattering to carrier transport, resulting in reduced Hall mobility. Optimizing the thickness of the AZO buffer layers to 10 nm led to highly (0001)-oriented bulk AZO films with a marked reduction in the above contribution, resulting in AZO films with improved Hall mobility together with enhanced carrier concentration. The surface morphology and point defect density were also improved by applying the buffer layers, as shown by atomic force microscopy and Raman spectroscopy, respectively.

  8. Growth of Polarity-Controlled ZnO Films on (0001) Al2O3

    NASA Astrophysics Data System (ADS)

    Park, J. S.; Chang, J. H.; Minegishi, T.; Lee, H. J.; Park, S. H.; Im, I. H.; Hanada, T.; Hong, S. K.; Cho, M. W.; Yao, T.

    2008-05-01

    The polarity control of ZnO films grown on (0001) Al2O3 substrates by plasma-assisted molecular-beam epitaxy (P-MBE) was achieved by using a novel CrN buffer layer. Zn-polar ZnO films were obtained by using a Zn-terminated CrN buffer layer, while O-polar ZnO films were achieved by using a Cr2O3 layer formed by O-plasma exposure of a CrN layer. The mechanism of polarity control was proposed. Optical and structural quality of ZnO films was characterized by high-resolution X-ray diffraction and photoluminescence (PL) spectroscopy. Low-temperature PL spectra of Zn-polar and O-polar samples show dominant bound exciton (I8) and strong free exciton emissions. Finally, one-dimensional periodic structures consisting of Zn-polar and O-polar ZnO films were simultaneously grown on the same substrate. The periodic inversion of polarity was confirmed in terms of growth rate, surface morphology, and piezo response microscopy (PRM) measurement.

  9. Magnetic and magnetocaloric properties of Er-Co-Al thin-film alloys

    NASA Astrophysics Data System (ADS)

    Kim, Miri; Kim, Jong-Woo; Lim, Sang Ho

    2015-11-01

    Er-Co-Al thin films with the compositions of ErCo1.52Al0.36, ErCo1.69Al0.76, and ErCo1.87Al0.16 were fabricated by magnetron-sputtering, and their magnetic and magnetocaloric properties were characterized in the asdeposited state and post-annealed state at 1073 K. The X-ray diffraction results indicate that the microstructure in the as-deposited state consists of an amorphous phase, which then transforms into a cubic Laves phase with C15 symmetry on annealing. The phase transformation, however, is incomplete, evidenced by the existence of Co precipitates and some oxides of Er and Al in the annealed samples. A compensation-like behavior is observed in the as-deposited samples, probably due to the sperimagnetic structure, but it disappears after annealing. The magnetic entropy change is largest for the annealed ErCo1.87Al0.16 sample, in which the composition is closest to the pseudo-binary Er(Co,Al)2 compound. The observed value, however, is rather small (3.2 J/kg K in a field sweep of 0-50 kOe), due the incomplete phase transformation from the amorphous to the cubic Laves phase during annealing.

  10. Photoluminescence enhancement of ZnO via coupling with surface plasmons on Al thin films

    NASA Astrophysics Data System (ADS)

    Dellis, S.; Kalfagiannis, N.; Kassavetis, S.; Bazioti, C.; Dimitrakopulos, G. P.; Koutsogeorgis, D. C.; Patsalas, P.

    2017-03-01

    We present that the ultra-violet emission of ZnO can be enhanced, as much as six-times its integral intensity, using an Al thin interlayer film between the Si substrate and ZnO thin film and a post-fabrication laser annealing process. The laser annealing is a cold process that preserves the chemical state and integrity of the underlying aluminum layer, while it is essential for the improvement of the ZnO performance as a light emitter and leads to enhanced emission in the visible and in the ultraviolet spectral ranges. In all cases, the metal interlayer enhances the intensity of the emitted light, either through coupling of the surface plasmon that is excited at the Al/ZnO interface, in the case of light-emitting ZnO in the ultraviolet region, or by the increased back reflection from the Al layer, in the case of the visible emission. In order to evaluate the process and develop a solid understanding of the relevant physical phenomena, we investigated the effects of various metals as interlayers (Al, Ag, and Au), the metal interlayer thickness, and the incorporation of a dielectric spacer layer between Al and ZnO. Based on these experiments, Al emerged as the undisputable best choice of metal interlayers because of its compatibility with the laser annealing process, as well as due to its high optical reflectivity at 380 and 248 nm, which leads to the effective coupling with surface plasmons at the Al/ZnO interfaces at 380 nm and the secondary annealing of ZnO by the back-reflected 248 nm laser beam.

  11. Deposition of nanocrystalline thin TiO2 films for MOS capacitors using Sol-Gel spin method with Pt and Al top electrodes

    NASA Astrophysics Data System (ADS)

    Rathee, Davinder; Kumar, Mukesh; Arya, Sandeep K.

    2012-10-01

    Nanocrystalline titanium dioxide (TiO2) films were deposited by Sol-Gel spin coating method on well clean P<1 0 0> Si substrate. Titanium isoproxide Ti(OC3H7O2)4 (TIP) was used as the Titania precursor. The thickness, composition, and surface morphology of the thin films were characterized using Stylus profilometer, X-ray diffraction (XRD), Field-Emission Scanning Electron Microscope (FESEM) and Atomic Force Microscope (AFM). The crystallite sizes of the TiO2 grains were measured from the typical diffraction peaks and were found to be approximately 23-54 nm. The XRD pattern and Raman spectrum analysis of the deposited film confirmed the polymorphism nature of TiO2 thin films. After annealing at high temperature; the phase transition, improvement in crystallinity, structure and property of the films were being observed. The six Raman peaks were analyzed at 145 cm-1, 199 cm-1, 397 cm-1, 516 cm-1 (doublet) and 637 cm-1 corresponding to active mode of anatase phase. Capacitance-Voltage (C-V) measurement analysis was performed to obtain various devices and process parameters. Metal Oxide Semiconductor (MOS) capacitors with Pt and Al as the top electrode were fabricated to explore electrical characteristics. The refractive index by ellipsometry was found 2.36 and dielectric constant was calculated as 58. In this study, the comparison of the leakage current for TiO2 thin films fabricated by various methods has also been reported.

  12. Epitaxial growth of homogeneous single-crystalline AlN films on single-crystalline Cu (1 1 1) substrates

    NASA Astrophysics Data System (ADS)

    Wang, Wenliang; Yang, Weijia; Liu, Zuolian; Lin, Yunhao; Zhou, Shizhong; Qian, Huirong; Gao, Fangliang; Yang, Hui; Li, Guoqiang

    2014-03-01

    The homogeneous and crack free single-crystalline AlN thin films have been epitaxially grown on single-crystalline Cu (1 1 1) substrates with an in-plane alignment of AlN [11-20]//Cu [1-10] by pulsed laser deposition (PLD) technology with an integrated laser rastering program. The as-grown AlN films are studied by spectroscopic ellipsometry, field emission scanning electron microscopy (FESEM), atomic force microscopy (AFM), polarized light microscopy, high-resolution X-ray diffraction, and high-resolution transmission electron microscopy (HRTEM). The spectroscopic ellipsometry reveals the excellent thickness uniformity of as-grown AlN films on the Cu (1 1 1) substrates with a root-mean-square (RMS) thickness inhomogeneity less than 2.6%. AFM and FESEM measurements indicate that very smooth and flat surface AlN films are obtained with a surface RMS roughness of 2.3 nm. The X-ray reflectivity image illustrates that there is a maximum of 1.2 nm thick interfacial layer existing between the as-grown AlN and Cu (1 1 1) substrates and is confirmed by HRTEM measurement, and reciprocal space mapping shows that almost fully relaxed AlN films are achieved only with a compressive strain of 0.48% within ∼321 nm thick films. This work demonstrates a possibility to obtain homogeneous and crack free single-crystalline AlN films on metallic substrates by PLD with optimized laser rastering program, and brings up a broad prospect for the application of acoustic filters that require abrupt hetero-interfaces between the AlN films and the metallic electrodes.

  13. Characteristics of nanocomposite ZrO2/Al2O3 films deposited by plasma-enhanced atomic layer deposition.

    PubMed

    Yun, Sun Jin; Lim, Jung Wook; Kim, Hyun-Tak

    2007-11-01

    Nanocomposite ZrO2/Al2O3 (ZAO) films were deposited on Si by plasma-enhanced atomic layer deposition and the film characteristics including interfacial oxide formation, dielectric constant (k), and electrical breakdown strength were investigated without post-annealing process. In both the mixed and nano-laminated ZAO films, the thickness of the interfacial oxide layer (T(IL)) was considerably reduced compared to ZrO2 and Al2O3 films. The T(IL) was 0.8 nm in nano-composite films prepared at a mixing ratio (ZrO2:Al2O3) of 1:1. The breakdown strength and the leakage current level were greatly improved by adding Al2O3 as little as 7.9% compared to that of ZrO2 and were enhanced more with increasing content of Al2O3. The k of ZrO2 and mixed ZAO (Al2O3 7.9%) films were 20.0 and 16.5, respectively. These results indicate that the addition of Al2O3 to ZrO2 greatly improves the electrical properties with less cost of k compared to the addition of SiO2.

  14. Interfacial perpendicular magnetic anisotropy and damping parameter in ultra thin Co{sub 2}FeAl films

    SciTech Connect

    Cui, Yishen; Khodadadi, Behrouz; Schaefer, Sebastian; Mewes, Tim; Lu, Jiwei; Wolf, Stuart A.

    2013-04-22

    B2-ordered Co{sub 2}FeAl films were synthesized using an ion beam deposition tool. A high degree of chemical ordering {approx}81.2% with a low damping parameter ({alpha}) less than 0.004 was obtained in a 50 nm thick film via rapid thermal annealing at 600 Degree-Sign C. The perpendicular magnetic anisotropy (PMA) was optimized in ultra thin Co{sub 2}FeAl films annealed at 350 Degree-Sign C without an external magnetic field. The reduced thickness and annealing temperature to achieve PMA introduced extrinsic factors thus increasing {alpha} significantly. However, the observed damping of Co{sub 2}FeAl films was still lower than that of Co{sub 60}Fe{sub 20}B{sub 20} films prepared at the same thickness and annealing temperature.

  15. Fabrication and Characterization of Reactively Sputtered AlInGaN Films with a Cermet Target Containing 5% Al and 7.5% In

    NASA Astrophysics Data System (ADS)

    Lin, Kaifan; Kuo, Dong-Hau

    2017-04-01

    AlInGaN films were deposited at a substrate temperature in the range of 100-400°C and a radio frequency (RF) output power in the range of 90-150 W on Si (100) by reactive sputtering in an (Ar + N2) atmosphere. A (Ga + GaN) cermet target for sputtering, containing 5 at.% aluminum and 7.5 at.% indium powders, was made by hot pressing the mixed metal powders and ceramic GaN. The effects of substrate temperature and sputtering output power on the formation of AlInGaN films and their electrical and optical properties were investigated. X-ray diffraction results showed that AlInGaN films grew with a preferential m-(10bar{1}0) growth plane and had a wurtzite crystal structure. The film roughness was influenced by the sputtering power and the film composition. The AlInGaN films deposited at 400°C and 150 W had the best crystallinity, and an electron concentration of 4.5 × 1017 cm-3, a Hall mobility of 497 cm2 V-1 s-1, and an optical bandgap ( E g) of 2.71 eV.

  16. Surface characteristics and protein adsorption on combinatorial binary Ti-M (Cr, Al, Ni) and Al-M (Ta, Zr) library films.

    PubMed

    Bai, Zhijun; Filiaggi, M J; Sanderson, R J; Lohstreter, L B; McArthur, M A; Dahn, J R

    2010-02-01

    Systematic studies of protein adsorption onto metallic biomaterial surfaces are generally lacking. Here, combinatorial binary library films with compositional gradients of Ti(1-x)Cr(x), Ti(1-x)Al(x), Ti(1-x)Ni(x) and Al(1-x)Ta(x), (0 Al(1-y)Zr(y) (0 < y <0.5) as well as corresponding pure metal films were sputtered onto clean Si surfaces. Bulk and surface chemistry, film microstructure, and surface roughness were subsequently correlated to fibrinogen or albumin adsorption measured using a high throughput wavelength dispersive spectroscopy technique. X-ray diffraction revealed these binary films to have crystalline phases present primarily at either extreme of the compositional library and an amorphous zone dominating along the gradient. These mirror-like films were generally found by atomic force microscopy to have a roughness of less than 8 nm, with any relative increases in roughness consistent with the development of crystalline phases. Surface chemistry by quantitative high-resolution X-ray photoelectron spectroscopy differed significantly from bulk film composition as measured by electron microprobe, with TiO(2) and Al(2)O(3) preferentially forming on the binary film surfaces. Correspondingly, protein adsorption onto these films closely correlated with their surface oxide fractions. Aluminum deposited as either a constant-composition film or as part of a binary library consistently adsorbed the least amount of albumin and fibrinogen, with alumina-enrichment of the surface oxide correlating with this adsorption. Overall, this combinatorial materials approach coupled with high-throughput surface analytical methods provides an efficient method of screening potential metallic biomaterials that may enable as well systematic studies of surface properties driving protein adsorption on these metal / metal oxide systems.

  17. Influence of dosing sequence and film thickness on structure and resistivity of Al-ZnO films grown by atomic layer deposition

    SciTech Connect

    Pollock, Evan B. Lad, Robert J.

    2014-07-01

    Aluminum-doped zinc oxide (AZO) films were deposited onto amorphous silica substrates using an atomic layer deposition process with diethyl zinc (DEZ), trimethyl aluminum (TMA), and deionized water at 200 °C. Three different Al doping sequences were used at a ZnO:Al ratio of 11:1 within the films. A minimum film resistivity of 1.6 × 10{sup −3} Ω cm was produced using sequential dosing of DEZ, TMA, DEZ, followed by H{sub 2}O for the Al doping step. This “ZAZW” sequence yielded an AZO film resistivity that is independent of film thickness, crystallographic texture, and grain size, as determined by high resolution x-ray diffraction (XRD). A pseudo-Voigt analysis method yields values for grain sizes that are smaller than those calculated using other XRD methods. Anisotropic grain sizes or variations in crystallographic texture have minimal influence on film resistivity, which suggests that factors other than film texture, such as intragrain scattering, may be important in influencing film resistivity.

  18. Skin edge perception in mammograms: a comparison of two film-screen combinations.

    PubMed

    Meeson, S; Young, K C; Cooke, J

    2000-04-01

    The entire skin edge is not always seen on mammograms. The importance of demonstrating the full extent of the breast on a mammogram is uncertain, but there are implications for optimizing film design and use. The new Agfa HDR film has been designed to improve visualization of the skin edge without compromising overall contrast. A quantitative and qualitative comparison between Agfa HDR and the Fuji UMMA film has been performed. A total of 216 mammograms from 54 symptomatic women were analysed. For each view on each woman, one breast was imaged using Fuji UMMA film and the other using Agfa HDR film. The target density achieved on quality control films of PMMA blocks was 1.70 +/- 0.10 for both film types. A radiologist graded the skin edges of all the films as visible, just visible or dark. Measurements were made of the optical densities in the skin edge region and on the fully exposed black part of the film, adjacent to the skin line. 70% of the HDR films had visible skin edges compared with 43% of the UMMA films. 2% of the HDR films had dark skin edges compared with 26% of the UMMA films. Optical densities at the skin edge were broadly similar for the two films and in the range 3.6 +/- 0.3. However, the density of the black part of the Agfa film was about 0.5 higher than with the Fuji film and it appears that this was the main reason the skin edge region was better visualized with the Agfa film.

  19. Annealing effect on the electrical properties and composition of a NiCrAl thin film resistor

    NASA Astrophysics Data System (ADS)

    Chuang, Nai-Chuan; Lin, Jyi-Tsong; Chen, Huey-Ru

    2015-12-01

    The composition of NiCrAl thin film resistors, under different annealing conditions in a N2 atmosphere, was investigated. The Auger electron spectrum (AES) has been used in studying the composition of NiCrAl thin films. The concentration ratio of Cr to Ni decreases when the annealing temperature increases. The electrical properties of a NiCrAl thin film resistor are affected by the concentrations of Cr and Ni, which lead to a higher temperature coefficient of resistance (TCR) and a lower sheet resistivity. The TCR of a NiCrAl thin film resistor is -5 ppm/°C at a 250 °C annealing temperature.

  20. Effects of Al Doping on the Properties of ZnO Thin Films Deposited by Atomic Layer Deposition

    NASA Astrophysics Data System (ADS)

    Zhai, Chen-Hui; Zhang, Rong-Jun; Chen, Xin; Zheng, Yu-Xiang; Wang, Song-You; Liu, Juan; Dai, Ning; Chen, Liang-Yao

    2016-09-01

    The tuning of structural, optical, and electrical properties of Al-doped ZnO films deposited by atomic layer deposition technique is reported in this work. With the increasing Al doping level, the evolution from (002) to (100) diffraction peaks indicates the change in growth mode of ZnO films. Spectroscopic ellipsometry has been applied to study the thickness, optical constants, and band gap of AZO films. Due to the increasing carrier concentration after Al doping, a blue shift of band gap and absorption edge can be observed, which can be interpreted by Burstein-Moss effect. The carrier concentration and resistivity are found to vary significantly among different doping concentration, and the optimum value is also discussed. The modulations and improvements of properties are important for Al-doped ZnO films to apply as transparent conductor in various applications.

  1. Perpendicularizing magnetic anisotropy of full-Heusler Co2FeAl films by cosputtering with terbium

    NASA Astrophysics Data System (ADS)

    Li, X. Q.; Xu, X. G.; Zhang, D. L.; Miao, J.; Zhan, Q.; Jalil, M. B. A.; Yu, G. H.; Jiang, Y.

    2010-04-01

    In this letter, we fabricated Co2FeAl films with perpendicular-to-plane magnetic anisotropy by cosputtering with terbium (Tb). The as-prepared (Tb+Co2FeAl) films (TCFA) consists of nanocrystalline L21 Co2FeAl and amorphous alloy of Tb(Co, Fe, and Al). The coercivity field (Hc) of the TCFA films is adjustable from 200 to 800 Oe. After annealing, the Hc decreases to 70 Oe. A perpendicularly magnetized spin valve with the TCFA films as free and reference layers shows a current-perpendicular-to-plane magnetoresistance of 1.8% at room temperature. Our result opens a way to fabricate perpendicularly magnetized full-Heusler alloys and makes it possible to realize faster and simple structured magnetic storage bits in the future.

  2. Effects of Al Doping on the Properties of ZnO Thin Films Deposited by Atomic Layer Deposition.

    PubMed

    Zhai, Chen-Hui; Zhang, Rong-Jun; Chen, Xin; Zheng, Yu-Xiang; Wang, Song-You; Liu, Juan; Dai, Ning; Chen, Liang-Yao

    2016-12-01

    The tuning of structural, optical, and electrical properties of Al-doped ZnO films deposited by atomic layer deposition technique is reported in this work. With the increasing Al doping level, the evolution from (002) to (100) diffraction peaks indicates the change in growth mode of ZnO films. Spectroscopic ellipsometry has been applied to study the thickness, optical constants, and band gap of AZO films. Due to the increasing carrier concentration after Al doping, a blue shift of band gap and absorption edge can be observed, which can be interpreted by Burstein-Moss effect. The carrier concentration and resistivity are found to vary significantly among different doping concentration, and the optimum value is also discussed. The modulations and improvements of properties are important for Al-doped ZnO films to apply as transparent conductor in various applications.

  3. Frequency Comparison of Two High-Accuracy Al+ Optical Clocks

    NASA Astrophysics Data System (ADS)

    Chou, C. W.; Hume, D. B.; Koelemeij, J. C. J.; Wineland, D. J.; Rosenband, T.

    2010-02-01

    We have constructed an optical clock with a fractional frequency inaccuracy of 8.6×10-18, based on quantum logic spectroscopy of an Al+ ion. A simultaneously trapped Mg+ ion serves to sympathetically laser cool the Al+ ion and detect its quantum state. The frequency of the S01↔P03 clock transition is compared to that of a previously constructed Al+ optical clock with a statistical measurement uncertainty of 7.0×10-18. The two clocks exhibit a relative stability of 2.8×10-15τ-1/2, and a fractional frequency difference of -1.8×10-17, consistent with the accuracy limit of the older clock.

  4. Structural properties of ZnO:Al films produced by the sol–gel technique

    SciTech Connect

    Zaretskaya, E. P. Gremenok, V. F.; Semchenko, A. V.; Sidsky, V. V.; Juskenas, R. L.

    2015-10-15

    ZnO:Al films are produced by sol–gel deposition at temperatures of 350–550°C, using different types of reagents. Atomic-force microscopy, X-ray diffraction analysis, Raman spectroscopy, and optical transmittance measurements are used to study the dependence of the structural, morphological, and optical properties of the ZnO:Al coatings on the conditions of deposition. The optical conditions for the production of ZnO:Al layers with preferred orientation in the [001] direction and distinguished by small surface roughness are established. The layers produced in the study possess optical transmittance at a level of up to 95% in a wide spectral range and can be used in optoelectronic devices.

  5. Plasmonic enhancement of UV emission from ZnO thin films induced by Al nano-concave arrays

    NASA Astrophysics Data System (ADS)

    Norek, Małgorzata; Łuka, Grzegorz; Włodarski, Maksymilian

    2016-10-01

    Surface plasmons (SPs) supported by Al nano-concave arrays with increasing interpore distance (Dc) were used to enhance the ultraviolet light emission from ZnO thin films. Two sets of samples were prepared: in the first set the thin ZnO films were deposited directly on Al nanoconcaves (the Al/ZnO samples) and in the second set a 10 nm - Al2O3 spacer was placed between the textured Al and the ZnO films (the Al/Al2O3-ALD/ZnO samples). In the Al/ZnO samples the enhancement was limited by a nonradiative energy dissipation due to the Ohmic loss in the Al metal. However, for the ZnO layer deposited directly on Al nanopits synthesized at 150 V (Dc = 333 ± 18 nm), the largest 9-fold enhancement was obtained by achieving the best energy fit between the near band-edge (NBE) emission from ZnO and the λ(0,1) SPP resonance mode. In the Al/Al2O3-ALD/ZnO samples the amplification of the UV emission was smaller than in the Al/ZnO samples due to a big energy mismatch between the NBE emission and the λ(0,1) plasmonic mode. The results obtained in this work indicate that better tuning of the NBE - λ(0,1) SPP resonance mode coupling is possible through a proper modification of geometrical parameters in the Al/Al2O3-ALD/ZnO system such as Al nano-concave spacing and the thickness of the corresponding layer. This approach will reduce the negative influence of the non-radiative plasmonic modes and most likely will lead to further enhancement of the SP-modulated UV emission from ZnO thin films.

  6. Effects of In, Al and Sn dopants on the structural and optical properties of ZnO thin films.

    PubMed

    Caglar, Yasemin; Ilican, Saliha; Caglar, Mujdat; Yakuphanoglu, Fahrettin

    2007-07-01

    Effect of In, Al and Sn dopants on the optical and structural properties of ZnO thin films have been investigated by X-ray diffraction technique and optical characterization method. X-ray diffraction patterns confirm that the films have polycrystalline nature. The thin films have (002) as the preferred orientation. This (002) preferred orientation is due to the minimal surface energy which the hexagonal structure, c-plane to the ZnO crystallites, corresponds to the densest packed plane. The grain size values of the films are found to be 29.0, 35.2 and 39.5 nm for In, Al and Sn doped ZnO thin films, respectively. The optical band gaps of the films were calculated. The absorption edge shifts to the lower wavelengths with In, Al and Sn dopants. The inclusion of dopant into films expands also width of localized states as E(UIn)>E(UAl)>E(USn). The refractive index dispersion curves obey the single oscillator model. The dispersion parameters and optical constants of the films were determined. These parameters changed with In, Al and Sn dopants.

  7. Vertical spin transport in Al with Pd/Al/Ni80Fe20 trilayer films at room temperature by spin pumping

    PubMed Central

    Kitamura, Yuta; Shikoh, Eiji; Ando, Yuichiro; Shinjo, Teruya; Shiraishi, Masashi

    2013-01-01

    Spin pumping enables the vertical transport of pure spin current through Al in a Pd/Al/Ni80Fe20(Py) trilayer film, in which the Py acts as a spin battery. The spin current injected into the Al flows through the Al to reach the Pd, resulting in the generation of electromotive forces due to the inverse spin Hall effect in the Pd. The electromotive forces decreased with increasing thickness of the Al layer. A simple model based on the theory by Tserkovnyak et al., allows an estimation of the spin coherence of the vertical spin transport in the Al of 61 nm. This comparatively short coherence is attributed to a reduction in spin pumping efficiency because of the roughness of the Al/Py interface.

  8. Vertical spin transport in Al with Pd/Al/Ni80Fe20 trilayer films at room temperature by spin pumping

    NASA Astrophysics Data System (ADS)

    Kitamura, Yuta; Shikoh, Eiji; Ando, Yuichiro; Shinjo, Teruya; Shiraishi, Masashi

    2013-04-01

    Spin pumping enables the vertical transport of pure spin current through Al in a Pd/Al/Ni80Fe20(Py) trilayer film, in which the Py acts as a spin battery. The spin current injected into the Al flows through the Al to reach the Pd, resulting in the generation of electromotive forces due to the inverse spin Hall effect in the Pd. The electromotive forces decreased with increasing thickness of the Al layer. A simple model based on the theory by Tserkovnyak et al., allows an estimation of the spin coherence of the vertical spin transport in the Al of 61 nm. This comparatively short coherence is attributed to a reduction in spin pumping efficiency because of the roughness of the Al/Py interface.

  9. Closed field unbalanced magnetron sputtering ion plating of Ni/Al thin films: influence of the magnetron power.

    PubMed

    Said, R; Ahmed, W; Gracio, J

    2010-04-01

    In this study NiAl thin films have been deposited using closed field unbalanced magnetron sputtering Ion plating (CFUBMSIP). The influence of magnetron power has been investigated using dense and humongous NiAl compound targets onto stainless steel and glass substrates. Potential applications include tribological, electronic media and bond coatings in thermal barrier coatings system. Several techniques has been used to characterise the films including surface stylus profilometry, energy dispersive spectroscopy (EDAX), X-Ray diffraction (XRD) Composition analysis of the samples was carried out using VGTOF SIMS (IX23LS) and Atomic force microscopy (AFM). Scratch tester (CSM) combined with acoustic emission singles during loading in order to compare the coating adhesion. The acoustic emission signals emitted during the indentation process were used to determine the critical load, under which the film begins to crack and/or break off the substrate. The average thickness of the films was approximately 1 um. EDAX results of NiAl thin films coating with various magnetron power exhibited the near equal atomic% Ni:Al. The best result being obtained using 300 W and 400 W DC power for Ni and Al targets respectively. XRD revealed the presence of beta NiAl phase for all the films coatings. AFM analysis of the films deposited on glass substrates exhibited quite a smooth surface with surface roughness values in the nanometre range. CSM results indicate that best adhesion was achieved at 300 W for Ni, and 400 W for Al targets compared to sample other power values. SIMS depth profile showed a uniform distribution of the Ni and Al component from the surface of the film to the interface.

  10. Layer-by-layer engineered Co-Al hydroxide nanosheets/graphene multilayer films as flexible electrode for supercapacitor.

    PubMed

    Dong, Xinyi; Wang, Lei; Wang, Dong; Li, Cheng; Jin, Jian

    2012-01-10

    Multilayer films of Co-Al layered double hydroxide nanosheets (Co-Al LDH-NS) and graphene oxide (GO) were fabricated through layer-by-layer (LBL) assembly. By using a three-electrode system, the electrochemical performances of the films were investigated to evaluate their potential as electrode materials to be used in flexible supercapacitor devices. The Co-Al LDH-NS/GO multilayer films exhibited a high specific capacitance of 880 F/g and area capacitance of 70 F/m(2) under the scan rate of 5 mV/s. And the film exhibited good cycle stability over 2000 cycles. After treating the films at 200 °C in H(2) atmosphere, the specific capacitance and area capacitance were largely increased up to 1204 F/g and 90 F/m(2) due to partial reduction of GO. A flexible electrode by depositing Co-Al LDH-NS/GO multilayer film onto PET substrate was prepared to show the potential of Co-Al LDH-NS/GO films for flexible energy storage.

  11. Passivation Effect of Atomic Layer Deposition of Al2O3 Film on HgCdTe Infrared Detectors

    NASA Astrophysics Data System (ADS)

    Zhang, Peng; Ye, Zhen-Hua; Sun, Chang-Hong; Chen, Yi-Yu; Zhang, Tian-Ning; Chen, Xin; Lin, Chun; Ding, Ring-Jun; He, Li

    2016-09-01

    The passivation effect of atomic layer deposition of (ALD) Al2O3 film on a HgCdTe infrared detector was investigated in this work. The passivation effect of Al2O3 film was evaluated by measuring the minority carrier lifetime, capacitance versus voltage ( C- V) characteristics of metal-insulator-semiconductor devices, and resistance versus voltage ( R- V) characteristics of variable-area photodiodes. The minority carrier lifetime, C- V characteristics, and R- V characteristics of HgCdTe devices passivated by ALD Al2O3 film was comparable to those of HgCdTe devices passivated by e-beam evaporation of ZnS/CdTe film. However, the baking stability of devices passivated by Al2O3 film is inferior to that of devices passivated by ZnS/CdTe film. In future work, by optimizing the ALD Al2O3 film growing process and annealing conditions, it may be feasible to achieve both excellent electrical properties and good baking stability.

  12. Nanostructured Al-ZnO/CdSe/Cu2O ETA solar cells on Al-ZnO film/quartz glass templates

    PubMed Central

    2011-01-01

    The quartz/Al-ZnO film/nanostructured Al-ZnO/CdSe/Cu2O extremely thin absorber solar cell has been successfully realized. The Al-doped ZnO one-dimensional nanostructures on quartz templates covered by a sputtering Al-doped ZnO film was used as the n-type electrode. A 19- to 35-nm-thin layer of CdSe absorber was deposited by radio frequency magnetron sputtering, coating the ZnO nanostructures. The voids between the Al-ZnO/CdSe nanostructures were filled with p-type Cu2O, and therefore, the entire assembly formed a p-i-n junction. The cell shows the energy conversion efficiency as high as 3.16%, which is an interesting option for developing new solar cell devices. PACS: 88.40.jp; 73.40.Lq; 73.50.Pz. PMID:22136081

  13. Nanostructured Al-ZnO/CdSe/Cu2O ETA solar cells on Al-ZnO film/quartz glass templates

    NASA Astrophysics Data System (ADS)

    Wang, Xianghu; Li, Rongbin; Fan, Donghua

    2011-12-01

    The quartz/Al-ZnO film/nanostructured Al-ZnO/CdSe/Cu2O extremely thin absorber solar cell has been successfully realized. The Al-doped ZnO one-dimensional nanostructures on quartz templates covered by a sputtering Al-doped ZnO film was used as the n-type electrode. A 19- to 35-nm-thin layer of CdSe absorber was deposited by radio frequency magnetron sputtering, coating the ZnO nanostructures. The voids between the Al-ZnO/CdSe nanostructures were filled with p-type Cu2O, and therefore, the entire assembly formed a p-i-n junction. The cell shows the energy conversion efficiency as high as 3.16%, which is an interesting option for developing new solar cell devices. PACS: 88.40.jp; 73.40.Lq; 73.50.Pz.

  14. Determination of the Lifetime of a Double-Oxide Film in Al Castings

    NASA Astrophysics Data System (ADS)

    El-Sayed, Mahmoud Ahmed; Salem, Hanadi A. G.; Kandeil, Abdelrazek Youssef; Griffiths, W. D.

    2014-08-01

    One of the most important casting defects in Al alloys is thought to be the double-oxide film defect (bifilm) which has been reported to have a deleterious effect on the reproducibility of the mechanical properties of Al castings. Previous research has suggested that the atmosphere inside such bifilms could be consumed by reaction with the surrounding melt, which might decrease the size of the defects and reduce their harmful effect on mechanical properties. In order to follow the change in the composition of the interior atmosphere of a bifilm, analog air bubbles were held inside Al alloy melts, for varying lengths of time, and subjected to stirring, followed by solidification. The bubble contents were then analyzed using a mass spectrometer to determine the changes in their compositions with time. The results suggested that initially oxygen and then nitrogen inside the bubble were consumed, and hydrogen dissolved in the melt diffused into the bubble. The consumption rates of O and N as well as the rate of H diffusion were dependent upon the type of oxide, which was dependent on the alloy composition. The reaction rates were the fastest with MgO (in an Al-5Mg alloy), slower with alumina (in commercial-purity Al alloy), and the slowest with MgAl2O4 spinel (in an Al-7Si-0.3Mg alloy). It was estimated that the times required for typical bifilm defects in the different alloys to lose their entire oxygen and nitrogen contents were about 345 seconds (~6 minutes), in the case of Al-5Mg; 538 seconds (~9 minutes), in the case of a commercial purity alloy; and 1509 seconds (~25 minutes), in the case of the Al-7Si-0.3Mg alloy (2L99) due to the different oxides that the different alloys would be expected to form.

  15. Electrical and optical properties of Al-doped ZnO and ZnAl2O4 films prepared by atomic layer deposition

    PubMed Central

    2013-01-01

    ZnO/Al2O3 multilayers were prepared by alternating atomic layer deposition (ALD) at 150°C using diethylzinc, trimethylaluminum, and water. The growth process, crystallinity, and electrical and optical properties of the multilayers were studied with a variety of the cycle ratios of ZnO and Al2O3 sublayers. Transparent conductive Al-doped ZnO films were prepared with the minimum resistivity of 2.4 × 10−3 Ω·cm at a low Al doping concentration of 2.26%. Photoluminescence spectroscopy in conjunction with X-ray diffraction analysis revealed that the thickness of ZnO sublayers plays an important role on the priority for selective crystallization of ZnAl2O4 and ZnO phases during high-temperature annealing ZnO/Al2O3 multilayers. It was found that pure ZnAl2O4 film was synthesized by annealing the specific composite film containing alternative monocycle of ZnO and Al2O3 sublayers, which could only be deposited precisely by utilizing ALD technology. PMID:23537274

  16. Optical properties and oxidation of α-phase Ag–Al thin films

    NASA Astrophysics Data System (ADS)

    De Silva, Kaludewa S. B.; Keast, Vicki J.; Gentle, Angus; Cortie, Michael B.

    2017-03-01

    We investigate a series of Ag–Al thin films containing up to 12 at% Al with the purpose of discovering whether these alloys would be a better choice for nanophotonic applications than pure Ag. Variable angle spectroscopic ellipsometry, AFM, x-ray diffraction and density functional theory are applied to explore and characterize the materials. Electromagnetic simulations of optical properties are used to place the results into a theoretical framework. We find that the increase in electron-to-atom ratio associated with the Al additions changes the optical properties: additions of the order of 1–2 at% Al are beneficial as they are associated with favorable changes in the dielectric function, but for greater additions of Al there is a flattening of the absorption edge and an increase in optical loss. In addition, contents of more than about 2 at% Al are associated with the onset of time-dependent intergranular oxidation, which causes a pronounced dip in the reflectance spectrum at about 2.3–2.4 eV (∼500–540 nm).

  17. Optical properties and oxidation of α-phase Ag-Al thin films.

    PubMed

    De Silva, Kaludewa S B; Keast, Vicki J; Gentle, Angus; Cortie, Michael B

    2017-03-03

    We investigate a series of Ag-Al thin films containing up to 12 at% Al with the purpose of discovering whether these alloys would be a better choice for nanophotonic applications than pure Ag. Variable angle spectroscopic ellipsometry, AFM, x-ray diffraction and density functional theory are applied to explore and characterize the materials. Electromagnetic simulations of optical properties are used to place the results into a theoretical framework. We find that the increase in electron-to-atom ratio associated with the Al additions changes the optical properties: additions of the order of 1-2 at% Al are beneficial as they are associated with favorable changes in the dielectric function, but for greater additions of Al there is a flattening of the absorption edge and an increase in optical loss. In addition, contents of more than about 2 at% Al are associated with the onset of time-dependent intergranular oxidation, which causes a pronounced dip in the reflectance spectrum at about 2.3-2.4 eV (∼500-540 nm).

  18. Formation of CuAlO2 Film by Ultrasonic Spray Pyrolysis

    NASA Astrophysics Data System (ADS)

    Iping, S.; Lockman, Zainovia; Hutagalung, S. D.; Kamsul, A.; Matsuda, Atsunori

    2011-10-01

    Smooth, crack free and homogenous CuAlO2 film was produced by chemical solution deposition process via spray pyrolysis technique on a cleaned Si substrate. The precursor solution used was comprised of a mixture of 45.87 mmol Cu(NO3)2.3H2O and 90 mmol Al(NO3)3.9H2O at ratio of Cu:Al = 1.2:1. The precursor solution was placed in a mist chamber and was atomized by a nebulizer to produce precursor mist. The precursor mist was then carried out by Ar gas and was sprayed onto a heated Si. Two main parameters were studied: the distance between the nozzle of the precursor mist chamber and the Si and the temperature of the Si substrate. It appears that from the XRD data, CuAlO2 can be detected for samples prepared by spraying the precursor mist at temperature of > 550 °C with distance between the nozzle and the substrate of 3cm. Reaction of the Cu and Al ions in the mist near the substrate may have promoted the crystallisation of CuAlO2.

  19. Al-26 production profile and model comparisons in Canyon Diablo

    NASA Technical Reports Server (NTRS)

    Michlovich, E.; Elmore, D.; Vogt, S.; Lipschutz, M.; Masarik, J.; Reedy, R. C.

    1993-01-01

    The large preatmospheric size of the Canyon Diablo meteorite, a radius of about 15 m, makes it especially suitable for systematic studies of cosmogenic nuclide production rates of iron objects in a 2 pi geometry. To reconstruct the exposure history of the meteoroid, Heymann et al. investigated several fragments recovered from known geographic locations around the crater for their shock features and cosmogenic nobel gases. They applied the Signer-Nier noble gas production rate model to establish the preatmospheric depth of the specimens in the meteoroid. Cosmic ray exposure ages suggested a multi-episodic irradiation, with 170 or 540 Ma being inferred for most of the samples studied while two anomalous specimens indicated a possible third exposure age at 940 Ma. Be-10 and Cl-36 have been measured in a number of these same samples by accelerator mass spectrometry (AMS), with use being made of the preatmospheric depths determined in Heymann et al. to construct production profiles. The present study extends the cosmogenic radionuclide data to Al-26 and compares the results with both the production rate model of Reedy and Arnold and production rates determined from the cross sections used by the Reedy-Arnold model (for the major nuclear reactions making Al-26) in combination with differential fluxes calculated using the Los Alamos High Energy Transport (LAHET) Code System. Model calculations for Be-10 and Cl-36 have also been obtained.

  20. Frequency Comparison of Al+ and Hg+ Optical Standards

    NASA Astrophysics Data System (ADS)

    Rosenband, T.; Hume, D. B.; Brusch, A.; Lorini, L.; Schmidt, P. O.; Fortier, T. M.; Stalnaker, J. E.; Diddams, S. A.; Newbury, N. R.; Swann, W. C.; Oskay, W. H.; Itano, W. M.; Wineland, D. J.; Bergquist, J. C.

    2008-04-01

    We compare the frequencies of two single ion frequency standards: 27Al+ and 199Hg+. Systematic fractional frequency uncertainties of both standards are below 10-16, and the statistical measurement uncertainty is below 5 × 10-17. Recent ratio measurements show a reproducibility that is better than 10-16.

  1. Exploration of Al-Doped ZnO in Photovoltaic Thin Films

    NASA Astrophysics Data System (ADS)

    Ciccarino, Christopher; Sahiner, M. Alper

    The electrical properties of Al doped ZnO-based thin films represent a potential advancement in the push for increasing solar cell efficiency. Doping with Aluminum will theoretically decrease resistivity of the film and therefore achieve this potential as a viable option in the P-N junction phase of photovoltaic cells. The n-type semi-conductive characteristics of the ZnO layer will theoretically be optimized with the addition of Aluminum carriers. In this study, Aluminum doping concentrations ranging from 1-3% by mass were produced, analyzed, and compared. Films were developed onto ITO coated glass using the Pulsed Laser Deposition technique. Target thickness was 250 nm and ellipsometry measurements showed uniformity and accuracy in this regard. Active dopant concentrations were determined using Hall Effect measurements. Efficiency measurements showed possible applications of this doped compound, with upwards of 7% efficiency measured, using a Keithley 2602 SourceMeter set-up. XRD scans showed highly crystalline structures, with effective Al intertwining of the hexagonal wurtzile ZnO molecular structure. This alone indicates a promising future of collaboration between these two materials.

  2. Characteristics of AZO thin films prepared at various Al target input current deposited on PET substrate

    NASA Astrophysics Data System (ADS)

    Kim, Yun-Hae; Park, Chang-Wook; Lee, Jin-Woo; Lee, Dong Myung

    2015-03-01

    Transparent conductive oxide is a thin film to be used in numerous applications throughout the industry in general. Transparent electrode materials used in these industries are in need of light transmittance with excellent high and low electrical characteristics, substances showing the most excellent physical properties while satisfying all the characteristics such as indium tin oxide film. However, reserves of indium are very small, there is an environmental pollution problem. So the study of zinc oxide (ZnO) is actively carried out in an alternative material. This study analyzed the characteristics by using a direct current (DC) magnetron sputtering system. The electric and optical properties of these films were studied by Hall measurement and optical spectroscopy, respectively. When the Al target input current is 2 mA and 4 mA, it demonstrates about 80% transmittance in the range of the visible spectrum. Also, when Al target input current was 6 mA, sheet resistance was the smallest on PET substrate. The minimum resistivity is 3.96×10-3 ohm/sq.

  3. Effects of annealing pressure and Ar+ sputtering cleaning on Al-doped ZnO films

    NASA Astrophysics Data System (ADS)

    Wang, Jiwei; Mei, Yong; Lu, Xuemei; Fan, Xiaoxing; Kang, Dawei; Xu, Panfeng; Tan, Tianya

    2016-11-01

    Post-treatments of Al-doped ZnO films fabricated by sol-gel method were studied in condition of annealing in air, vacuum and protective ambient, as well as the follow-up Ar+ sputtering cleaning. The effect of annealing pressure on resistivity of AZO films was investigated from 105 to 10-4 Pa, where the resistivity decreased four orders of magnitude as the pressure decreased and approached to its minimum at 10 Pa. It was observed that the main decreasing of resistivity occurred in a very narrow range of middle vacuum (between 100 and 10 Pa) and high vacuum was dispensable. The XRD and XPS characterizations demonstrated that the radical increasing of oxygen vacancy, Zn interstitial and substitution of Al3+ for Zn2+ under middle vacuum were responsible for the significant enhancement of conductivity. The follow-up Ar+ sputtering cleaning can further decrease the resistivity through removing the chemisorbed oxygen on film surface and grain boundaries, meanwhile fulfil the surface texture process, and thus improve both electrical and optical performances for applications.

  4. Preparation and characterization of Co epitaxial thin films on Al2O3(0001) single-crystal substrates

    NASA Astrophysics Data System (ADS)

    Yabuhara, Osamu; Ohtake, Mitsuru; Nukaga, Yuri; Futamoto, Masaaki

    2011-01-01

    Co epitaxial thin films were prepared on Al2O3(0001) single-crystal substrates in a substrate temperature range between 50 and 500 °C by ultra high vacuum molecular beam epitaxy. Effects of substrate temperature on the structure and the magnetic properties of the films were investigated. The films grown at temperatures lower than 150 °C consist of fcc- Co(111) crystal. With increasing the substrate temperature, hcp-Co(0001) crystal coexists with the fcc crystal and the volume ratio of hcp to fcc crystal increases. The films prepared at temperatures higher than 250 °C consist primarily of hcp crystal. The film growth seems to follow island-growth mode. The films consisting primarily of hcp crystal show perpendicular magnetic anisotropy. The domain structure and the magnetization properties are influenced by the magnetocrystalline anisotropy and the shape anisotropy caused by the film surface roughness.

  5. Heavily-doped ZnO:Al thin films prepared by using magnetron Co-sputtering: Optical and electrical properties

    NASA Astrophysics Data System (ADS)

    Moon, Eun-A.; Jun, Young-Kil; Kim, Nam-Hoon; Lee, Woo-Sun

    2016-07-01

    Photovoltaic applications require transparent conducting-oxide (TCO) thin films with high optical transmittance in the visible spectral region (380 - 780 nm), low resistivity, and high thermal/chemical stability. The ZnO thin film is one of the most common alternatives to the conventional indium-tin-oxide (ITO) thin film TCO. Highly transparent and conductive ZnO thin films can be prepared by doping with group III elements. Heavily-doped ZnO:Al (AZO) thin films were prepared by using the RF magnetron co-sputtering method with ZnO and Al targets to obtain better characteristics at a low cost. The RF sputtering power to each target was varied to control the doping concentration in fixed-thickness AZO thin films. The crystal structures of the AZO thin films were analyzed by using X-ray diffraction. The morphological microstructure was observed by using scanning electron microscopy. The optical transmittance and the band gap energy of the AZO thin films were examined with an UV-visible spectrophotometer in the range of 300 - 1800 nm. The resistivity and the carrier concentration were examined by using a Hall-effect measurement system. An excellent optical transmittance > 80% with an appropriate band gap energy (3.26 - 3.27 eV) and an improved resistivity (~10 -1 Ω·cm) with high carrier concentration (1017 - 1019 cm -3) were demonstrated in 350-nm-thick AZO thin films for thin-film photovoltaic applications.

  6. Comparative Study of Al2O3 Optical Crystalline Thin Films Grown by Vapor Combinations of Al(CH3)3/N2O and Al(CH3)3/H2O2

    NASA Astrophysics Data System (ADS)

    Kumagai, Hiroshi; Toyoda, Koichi; Matsumoto, Masahiko; Obara, Minoru

    1993-12-01

    We compared the use of nitrous oxide (N2O) and hydrogen peroxide (H2O2) as the oxidant in digital chemical vapor deposition to obtain high-quality optical crystalline thin films of Al2O3. Optical constants and thicknesses of these films were investigated in terms of growth temperature, by using variable-angle spectroscopic ellipsometry.

  7. Large perpendicular magnetic anisotropy of ultrathin Ru and Rh films on a NiAl(001) surface.

    PubMed

    Kim, DongYoo; Yang, JeongHwa; Hong, Jisang

    2010-10-27

    Using the full potential linearized augmented plane wave (FLAPW) method, the magnetic properties of two-dimensional Ru and Rh monolayers (MLs) on a NiAl(001) surface have been investigated. It has been found that free standing one monolayer Ru and Rh films have ferromagnetic ground state with magnetic moments of 2.21 and 1.48 μ(B), respectively. The ferromagnetism is still observed even on a Ni terminated NiAl(001) surface, while no magnetic state is found on an Al terminated surface. The calculated magnetic moments of Ru and Rh atoms are 1.56 and 0.88 μ(B), respectively. In addition, an induced magnetic moment in surface Ni is observed. It has been found that the free standing Ru film has perpendicular magnetization to the film surface with a magnetocrystalline anisotropy (MCA) energy of 0.66 meV/atom, while an in-plane MCA energy of 0.37 meV/atom is achieved in Rh film. Very interestingly, we find that both Ru/NiAl(001) and Rh/NiAl(001) films have perpendicular magnetic anisotropy and the calculated MCA energies are 0.66 and 1.11 meV in Ru/NiAl(001) and Rh/NiAl(001), respectively. Along with the magnetic anisotropy, we have presented theoretically calculated x-ray absorption spectroscopy (XAS) and x-ray magnetic circular dichroism (XMCD) results.

  8. Large perpendicular magnetic anisotropy of ultrathin Ru and Rh films on a NiAl(001) surface

    NASA Astrophysics Data System (ADS)

    Kim, Dongyoo; Yang, JeongHwa; Hong, Jisang

    2010-10-01

    Using the full potential linearized augmented plane wave (FLAPW) method, the magnetic properties of two-dimensional Ru and Rh monolayers (MLs) on a NiAl(001) surface have been investigated. It has been found that free standing one monolayer Ru and Rh films have ferromagnetic ground state with magnetic moments of 2.21 and 1.48 μB, respectively. The ferromagnetism is still observed even on a Ni terminated NiAl(001) surface, while no magnetic state is found on an Al terminated surface. The calculated magnetic moments of Ru and Rh atoms are 1.56 and 0.88 μB, respectively. In addition, an induced magnetic moment in surface Ni is observed. It has been found that the free standing Ru film has perpendicular magnetization to the film surface with a magnetocrystalline anisotropy (MCA) energy of 0.66 meV/atom, while an in-plane MCA energy of 0.37 meV/atom is achieved in Rh film. Very interestingly, we find that both Ru/NiAl(001) and Rh/NiAl(001) films have perpendicular magnetic anisotropy and the calculated MCA energies are 0.66 and 1.11 meV in Ru/NiAl(001) and Rh/NiAl(001), respectively. Along with the magnetic anisotropy, we have presented theoretically calculated x-ray absorption spectroscopy (XAS) and x-ray magnetic circular dichroism (XMCD) results.

  9. Sputter deposition of Al-doped ZnO films with various incident angles

    SciTech Connect

    Sato, Yasushi; Yanagisawa, Kei; Oka, Nobuto; Nakamura, Shin-ichi; Shigesato, Yuzo

    2009-09-15

    Al-doped ZnO (AZO) films were sputter deposited on glass substrates heated at 200 degree sign C under incident angles of sputtered particles at 0 degree sign (incidence normal to substrate), 20 deg., 40 deg., 60 deg., and 80 deg. In the case of normal incidence, x-ray diffraction pole figures show a strong [001] preferred orientation normal to the film surface. In contrast, in the case wherein the incident angles were higher than 60 degree sign , the [001] orientation inclined by 25 deg. - 35 deg. toward the direction of sputtered particles. Transmission electron microscopy revealed that the tilt angle of the [001] orientation increased with increasing angle of the incident sputtered particles, whereas the columnar structure did not show any sign of inclination with respect to the substrate plane.

  10. Sputtering deposition of Al-doped zinc oxide thin films using mixed powder targets

    NASA Astrophysics Data System (ADS)

    Ohshima, Tamiko; Maeda, Takashi; Tanaka, Yuki; Kawasaki, Hiroharu; Yagyu, Yoshihito; Ihara, Takeshi; Suda, Yoshiaki

    2016-01-01

    Sputtering deposition generally uses high-density bulk targets. Such a fabrication process has various problems including deterioration of the material during heating and difficulty in mixing a large number of materials in precise proportions. However, these problems can be solved by using a powder target. In this study, we prepared Al-doped ZnO (AZO) as transparent conductive thin films by radio-frequency magnetron sputtering with powder and bulk targets. Both the powder and bulk targets formed crystalline structures. The ZnO (002) peak was observed in the X-ray diffraction measurements. The mean transparency and resistivity of the films prepared with the powder target were 82% and 0.548 Ω · cm, respectively. The deposition rate with the powder target was lower than that with the bulk target.

  11. Study on the influence of different trench-patterned templates on the crystalline microstructure of AlN epitaxial films by X-ray microdiffraction

    NASA Astrophysics Data System (ADS)

    Thanh Khan, Dinh; Takeuchi, Shotaro; Nakamura, Yoshiaki; Nakamura, Kunihiko; Arauchi, Takuji; Miyake, Hideto; Hiramatsu, Kazumasa; Imai, Yasuhiko; Kimura, Shigeru; Sakai, Akira

    2017-02-01

    The crystalline microstructure of AlN films epitaxially grown on trench-patterned templates of AlN/α-Al2O3 and α-Al2O3 was studied by position-dependent X-ray microdiffraction measurements of AlN 11\\bar{2}4 and 0004 Bragg reflections. The crystalline microstructure of the AlN films is highly anisotropic and periodic corresponding to the periodicity in the trench pattern of templates. The lattice tilting fluctuation in the AlN film grown on the trench-patterned α-Al2O3 template is about one-half order of magnitude larger than that in the AlN film grown on the trench-patterned AlN/α-Al2O3 template. This is likely to be related to the significant misorientation initiated at the growth of AlN crystal domains from the sidewalls of the α-Al2O3 template without AlN buffer layers and the difference in contact areas at the AlN film/α-Al2O3 interface between the two samples. These findings suggest that trench-patterned templates of AlN/α-Al2O3 are suitable for growing thick high-quality AlN films.

  12. Epitaxial growth of AlN films via plasma-assisted atomic layer epitaxy

    SciTech Connect

    Nepal, N.; Qadri, S. B.; Hite, J. K.; Mahadik, N. A.; Mastro, M. A.; Eddy, C. R. Jr.

    2013-08-19

    Thin AlN layers were grown at 200–650 °C by plasma assisted atomic layer epitaxy (PA-ALE) simultaneously on Si(111), sapphire (1120), and GaN/sapphire substrates. The AlN growth on Si(111) is self-limited for trimethyaluminum (TMA) pulse of length > 0.04 s, using a 10 s purge. However, the AlN nucleation on GaN/sapphire is non-uniform and has a bimodal island size distribution for TMA pulse of ≤0.03 s. The growth rate (GR) remains almost constant for T{sub g} between 300 and 400 °C indicating ALE mode at those temperatures. The GR is increased by 20% at T{sub g} = 500 °C. Spectroscopic ellipsometry (SE) measurement shows that the ALE AlN layers grown at T{sub g} ≤ 400 °C have no clear band edge related features, however, the theoretically estimated band gap of 6.2 eV was measured for AlN grown at T{sub g} ≥ 500 °C. X-ray diffraction measurements on 37 nm thick AlN films grown at optimized growth conditions (T{sub g} = 500 °C, 10 s purge, 0.06 s TMA pulse) reveal that the ALE AlN on GaN/sapphire is (0002) oriented with rocking curve full width at the half maximum (FWHM) of 670 arc sec. Epitaxial growth of crystalline AlN layers by PA-ALE at low temperatures broadens application of the material in the technologies that require large area conformal growth at low temperatures with thickness control at the atomic scale.

  13. Multilayered TiAlN films on Ti6Al4V alloy for biomedical applications by closed field unbalanced magnetron sputter ion plating process.

    PubMed

    Yi, Peiyun; Peng, Linfa; Huang, Jiaqiang

    2016-02-01

    Ti6Al4V alloy has been widely used as a suitable material for surgical implants such as artificial hip joints. In this study, a series of multilayered gradient TiAlN coatings were deposited on Ti6Al4V substrate using closed field unbalanced magnetron sputter ion plating (CFUBMSIP) process. Taguchi design of experiment approach was used to reveal the influence of depositing parameters to the film composition and performance of TiAlN coatings. The phase structure and chemical composition of the TiAlN films were characterized by X-ray diffractometry (XRD) and X-ray photoelectron spectroscopy (XPS). Mechanical properties, including hardness, Young's modulus, friction coefficient, wear rate and adhesion strength were systematically evaluated. Potentiodynamic tests were conducted to evaluate the corrosion resistance of the coated samples in Ringer's solution at 37°C to simulate human body environment. Comprehensive performance of TiAlN films was evaluated by assigning different weight according to the application environment. S8, deposited by Ti target current of 8A, Al target current of 6A, bias voltage of -60V and nitrogen content with OEM (optical emission monitor) value of 45%, was found to achieve best performance in orthogonal experiments. Depositing parameters of S8 might be practically applied for commercialization of surgical implants.

  14. Stoichiometry of LaAlO3 films grown on SrTiO3 by pulsed laser deposition

    NASA Astrophysics Data System (ADS)

    Golalikhani, M.; Lei, Q. Y.; Chen, G.; Spanier, J. E.; Ghassemi, H.; Johnson, C. L.; Taheri, M. L.; Xi, X. X.

    2013-07-01

    We have studied the stoichiometry of epitaxial LaAlO3 thin films on SrTiO3 substrate grown by pulsed laser deposition as a function of laser energy density and oxygen pressure during the film growth. Both x-ray diffraction (θ-2θ scan and reciprocal space mapping) and transmission electron microscopy (geometric phase analysis) revealed a change of lattice constant in the film with the distance from the substrate. Combined with composition analysis using x-ray fluorescence we found that the nominal unit-cell volume expanded when the LaAlO3 film was La-rich, but remained near the bulk value when the film was La-poor or stoichiometric. La excess was found in all the films deposited in oxygen pressures lower than 10-2 Torr. We conclude that the discussion of LaAlO3/SrTiO3 interfacial properties should include the effects of cation off-stoichiometry in the LaAlO3 films when the deposition is conducted under low oxygen pressures.

  15. Modeling and Experimental Analysis on the Temperature Response of AlN-Film Based SAWRs

    PubMed Central

    Chen, Shuo; You, Zheng

    2016-01-01

    The temperature responses of aluminum nitride (AlN) based surface acoustic wave resonator (SAWR) are modeled and tested. The modeling of the electrical performance is based on a modified equivalent circuit model introduced in this work. For SAWR consisting of piezoelectric film and semiconducting substrate, parasitic parameters from the substrate is taken into consideration for the modeling. By utilizing the modified model, the high temperature electrical performance of the AlN/Si and AlN/6H-SiC based SAWRs can be predicted, indicating that a substrate with a wider band gap will lead to a more stable high temperature behavior, which is further confirmed experimentally by high temperature testing from 300 K to 725 K with SAWRs having a wavelength of 12 μm. Temperature responses of SAWR’s center frequency are also calculated and tested, with experimental temperature coefficient factors (TCF) of center frequency being −29 ppm/K and −26 ppm/K for the AlN/Si and AlN/6H-SiC based SAWRs, which are close to the predicted values. PMID:27483286

  16. Significant Enhancement in the Conductivity of Al-Doped Zinc Oxide thin Films for TCO Application

    NASA Astrophysics Data System (ADS)

    Mohite, R. M.; Ansari, J. N.; Roy, A. S.; Kothawale, R. R.

    2016-03-01

    Nanostructured Al-doped Zinc oxide (ZnO) thin films were deposited on glass substrate by chemical bath deposition (CBD) using aqueous zinc nitrate solution and subjected for different characterizations. Effect of Al3+ substitution on the properties of ZnO annealed at 400∘C was studied by XRD and UV-Vis for structural studies, SEM and TEM for surface morphology and DC four probe resistivity measurements for electrical properties. Al3+ substitution does not influence the morphology and well-known peaks related to wurtzite structure of ZnO. Electron microscopy (SEM and TEM) confirms rod shaped Al-doped ZnO nanocrystals with average width of 50nm. The optical band gap determined by UV-Visible spectroscopy was found to be in the range 3.37eV to 3.44eV. An EPR spectrum of AZO reveals peak at g=1.96 is due to shallow donors Zn interstitial. The DC electrical resistivity measurements of Al-doped ZnO show a minimum resistivity of 3.77×10-2Ω-cm. Therefore, these samples have potential use in n-type window layer in optoelectronic devices, organic solar cells, photonic crystals, photo-detectors, light emitting diodes (LEDs), gas sensors and chemical sensors.

  17. Influence of Ion Beam Irradiation on Structural, Magnetic and Electrical Characteristics of Ho-DOPED AlN Thin Films

    NASA Astrophysics Data System (ADS)

    Hassan, Najam Ul; Hussain, Zahid; Naeem, M.; Shah, Ishfaq Ahmad; Husnain, G.; Ahmad, Ishaq; Ullah, Zaka

    Holmium (Ho)-doped AlN thin films of thicknesses 60, 90 and 300 nm were grown in pure nitrogen atmosphere via RF magnetron sputtering. The deposited thin films were irradiated with protons at a dose of 5×1014 ions/cm2 and the effects of irradiation on structural, magnetic and electrical characteristics of thin films were investigated. Rutherford backscattering spectroscopy (RBS) confirmed the presence of Al, N and Ho in prepared samples. X-ray diffraction analysis showed that crystallinity of the thin films was enhanced after irradiation and thicker films were more crystalline. Atomic force microscopy (AFM) revealed that the surface roughness and porosity of the thin films were increased after irradiation. Magnetic measurements showed that diamagnetic AlN:Ho thin films can be transformed into paramagnetic and ferromagnetic ones via suitable irradiation. The increase in carrier concentrations after irradiation was responsible for tuning the electrical and magnetic characteristics of thin films for applications in various high voltage microelectronic and magnetic devices.

  18. Magneto-transport properties of oriented Mn{sub 2}CoAl films sputtered on thermally oxidized Si substrates

    SciTech Connect

    Xu, G. Z.; Du, Y.; Zhang, X. M.; Liu, E. K.; Wang, W. H. Wu, G. H.; Zhang, H. G.

    2014-06-16

    Spin gapless semiconductors are interesting family of materials by embracing both magnetism and semiconducting due to their unique band structure. Its potential application in future spintronics requires realization in thin film form. In this Letter, we report fabrication and transport properties of spin gapless Mn{sub 2}CoAl films prepared on thermally oxidized Si substrates by magnetron sputtering deposition. The films deposited at 673 K are well oriented to (001) direction and display a uniform-crystalline surface. Magnetotransport measurements on the oriented films reveal a semiconducting-like resistivity, small anomalous Hall conductivity, and linear magnetoresistance representative of the transport signatures of spin gapless semiconductors. The magnetic properties of the films have also been investigated and compared to that of bulk Mn{sub 2}CoAl, showing small discrepancy induced by the composition deviation.

  19. Single-layer nano-carbon film, diamond film, and diamond/nano-carbon composite film field emission performance comparison

    NASA Astrophysics Data System (ADS)

    Wang, Xiaoping; Wang, Jinye; Wang, Lijun

    2016-05-01

    A series of single-layer nano-carbon (SNC) films, diamond films, and diamond/nano-carbon (D/NC) composite films have been prepared on the highly doped silicon substrate by using microwave plasma chemical vapor deposition techniques. The films were characterised by scanning electron microscopy, Raman spectroscopy, and field emission I-V measurements. The experimental results indicated that the field emission maximum current density of D/NC composite films is 11.8-17.8 times that of diamond films. And the field emission current density of D/NC composite films is 2.9-5 times that of SNC films at an electric field of 3.0 V/μm. At the same time, the D/NC composite film exhibits the advantage of improved reproducibility and long term stability (both of the nano-carbon film within the D/NC composite cathode and the SNC cathode were prepared under the same experimental conditions). And for the D/NC composite sample, a high current density of 10 mA/cm2 at an electric field of 3.0 V/μm was obtained. Diamond layer can effectively improve the field emission characteristics of nano-carbon film. The reason may be due to the diamond film acts as the electron acceleration layer.

  20. Enhancement in the excitonic spontaneous emission rates for Si nanocrystal multi-layers covered with thin films of Au, Ag, and Al

    NASA Astrophysics Data System (ADS)

    Estrin, Y.; Rich, D. H.; Rozenfeld, N.; Arad-Vosk, N.; Ron, A.; Sa'ar, A.

    2015-10-01

    The enhancement in the spontaneous emission rate (SER) for Ag, Au, and Al films on multilayer Si nanocrystals (SiNCs) was probed with time-resolved cathodoluminescence (CL). The SiNCs were grown on Si(100) using plasma enhanced chemical vapor deposition. Electron-hole pairs were generated in the metal-covered SiNCs by injecting a pulsed high-energy electron beam through the thin metal films, which is found to be an ideal method of excitation for plasmonic quantum heterostructures and nanostructures that are opaque to laser or light excitation. Spatially, spectrally, and temporally resolved CL was used to measure the excitonic lifetime of the SiNCs in metal-covered and bare regions of the same samples. The observed enhancement in the SER for the metal-covered SiNCs, relative to the SER for the bare sample, is attributed to a coupling of the SiNC excitons with surface plasmon polaritons (SPPs) of the thin metal films. A maximum SER enhancement of ˜2.0, 1.4 and 1.2 was observed for the Ag, Au, and Al films, respectively, at a temperature of 55 K. The three chosen plasmonic metals of Ag, Au, and Al facilitate an interesting comparison of the exciton-SPP coupling for metal films that exhibit varying differences between the surface plasmon energy, ωsp, and the SiNC excitonic emission energy. A modeling of the temperature dependence of the Purcell enhancement factor, Fp, was performed and included the temperature dependence of the dielectric properties of the metals.

  1. Structural characterization of niobium oxide thin films grown on SrTiO3 (111) and (La,Sr)(Al,Ta)O3 (111) substrates

    NASA Astrophysics Data System (ADS)

    Dhamdhere, Ajit R.; Hadamek, Tobias; Posadas, Agham B.; Demkov, Alexander A.; Smith, David J.

    2016-12-01

    Niobium oxide thin films have been grown by molecular beam epitaxy on SrTiO3 (STO) (111) and (La0.18Sr0.82)(Al0.59Ta0.41)O3 (LSAT) (111) substrates. Transmission electron microscopy (TEM) confirmed the formation of high quality films with coherent interfaces. Films grown with higher oxygen pressure on STO (111) resulted in a (110)-oriented NbO2 phase with a distorted rutile structure, which can be described as body-centered tetragonal. The a lattice parameter of NbO2 was determined to be ˜13.8 Å in good agreement with neutron diffraction results published in the literature. Films grown on LSAT (111) at lower oxygen pressure produced the NbO phase with a defective rock salt cubic structure. The NbO lattice parameter was determined to be a ≈ 4.26 Å. The film phase/structure identification from TEM was in good agreement with in situ x-ray photoelectron spectroscopy measurements that confirmed the dioxide and monoxide phases, respectively. The atomic structure of the NbO2/STO and NbO/LSAT interfaces was determined based on comparisons between high-resolution electron micrographs and image simulations.

  2. Atomic-scale microstructure underneath nanoindentation in Al-Cr-N ceramic films

    SciTech Connect

    Zhuang, Chunqiang Li, Zhipeng; Lin, Songsheng

    2015-12-15

    In this work, Al-Cr-N ceramic films deformed by nanoindentation were peeled off from silicon substrates and their atomic-scale microstructures underneath the indenter were investigated by high resolution transmission electron microscope (HR-TEM). Dislocations were formed underneath the indenter and they accumulated along nano-grain boundaries. The accumulative dislocations triggered the crack initiation along grain boundaries, and further resulted in the crack propagation. Dislocations were also observed in nano-grains on the lateral contact area. A model was proposed to describe the variation of microstructures under nanoindentation.

  3. Atomic-scale microstructure underneath nanoindentation in Al-Cr-N ceramic films

    NASA Astrophysics Data System (ADS)

    Zhuang, Chunqiang; Li, Zhipeng; Lin, Songsheng

    2015-12-01

    In this work, Al-Cr-N ceramic films deformed by nanoindentation were peeled off from silicon substrates and their atomic-scale microstructures underneath the indenter were investigated by high resolution transmission electron microscope (HR-TEM). Dislocations were formed underneath the indenter and they accumulated along nano-grain boundaries. The accumulative dislocations triggered the crack initiation along grain boundaries, and further resulted in the crack propagation. Dislocations were also observed in nano-grains on the lateral contact area. A model was proposed to describe the variation of microstructures under nanoindentation.

  4. Topography of Anatase TiO₂ Film Synthesized on LaAlO₃(001)

    SciTech Connect

    Sasahara, Akira; Droubay, Timothy C.; Chambers, Scott A.; Uetsuka, H.; Onishi, Hiroshi

    2005-03-01

    The surface of an anatase titanium dioxide (TiO₂) film grown on LaAlO₃ was observed by noncontact atomic force microscopy (NC-AFM). After cleaning with a cycle of argon ion sputtering and annealing, (1x4) and (1x5) reconstructed terraces appeared. In addition to the terraces, the sputter-annealed surface included many agglomerations. X-ray photoelectron spectroscopy analysis showed the presence of Tin+ (n≤3). The low diffusivity of the Tin+⁺(n≤3) species generated by argon ion sputtering is responsible for the generation of the agglomerations.

  5. Stoichiometry, defects, and the polar catastrophe in LaAlO3 thin films on SrTiO3

    NASA Astrophysics Data System (ADS)

    Hellberg, C. Stephen

    2013-03-01

    Careful growth of LaAlO3 thin films on SrTiO3 by molecular beam epitaxy has shown that the La/Al ratio of the nominal LaAlO3 layer is key to the formation of a two-dimensional electron liquid at the interface--metallic conductivity is only observed in Al-rich films. The interfacial electron liquid forms due to the polar catastrophe, the diverging potential caused by the atomic layer arrangement at the interface when polar LaAlO3 is grown on TiO2-terminated non-polar SrTiO3. The system eventually reconstructs, moving negative charges to the interface to screen the diverging potential. I will present density functional calculations of the defects that form in LaAlO3 on SrTiO3 to accomodate variations in stoichiometry. In La-rich films, the lowest energy defects are extended and allow cation vacancies to move to the interface to screen the diverging potential. Thus the interface between La-rich LaAlO3 and SrTiO3 remains insulating. In Al-rich films, the defects are localized and block cation motion. In this case a conducting electron liquid forms to screen the diverging potential.

  6. Polarity-inverted ScAlN film growth by ion beam irradiation and application to overtone acoustic wave (000-1)/(0001) film resonators

    SciTech Connect

    Suzuki, Masashi; Yanagitani, Takahiko; Odagawa, Hiroyuki

    2014-04-28

    Polarity inversion in wurtzite film is generally achieved by the epitaxial growth on a specific under-layer. We demonstrate polarity inversion of c-axis oriented ScAlN films by substrate ion beam irradiation without using buffer layer. Substrate ion beam irradiation was induced by either sputtering a small amount of oxide (as a negative ion source) onto the cathode or by applying a RF bias to the substrate. Polarity of the films was determined by a press test and nonlinear dielectric measurement. Second overtone thickness extensional mode acoustic resonance and suppression of fundamental mode resonance, indicating complete polarity inversion, were clearly observed in bilayer highly oriented (000-1)/(0001) ScAlN film.

  7. Tailoring Energy Bandgap of Al Doped ZnO Thin Films Grown by Vacuum Thermal Evaporation Method.

    PubMed

    Vyas, Sumit; Singh, Shaivalini; Chakrabarti, P

    2015-12-01

    The paper presents the results of our experimental investigation pertaining to tailoring of energy bandgap and other associated characteristics of undoped and Al doped ZnO (AZO) thin film by varying the atomic concentration of Al in ZnO. Thin films of ZnO and ZnO doped with Al (1, 3, and 5 atomic percent (at.%)) were deposited on silicon substrate for structural characterization and on glass substrate for optical characterization. The dependence of structural and optical properties of Al doped ZnO on the atomic concentration of Al added to ZnO has been reported. On the basis of the experimental results an empirical formula has been proposed to calculate the energy bandgap of AZO theoretically in the range of 1 to 5 at.% of Al. The study revealed that AZO films are composed of smaller and larger number of grains as compared to pure ZnO counterpart and density of the grains was found to increase as the Al concentration increased (from 1 to 5 at.%). The transmittance in the visible region was greater than 90% and found to increase with increasing Al concentration up to 5 at.%. The optical bandgap was found to increase initially with increase in atomic concentration of Al concentration up to 3 at.% and decrease thereafter with increasing concentration of Al.

  8. Structure and dielectric properties of amorphous LaAlO3 and LaAlOxNy films as alternative gate dielectric materials

    NASA Astrophysics Data System (ADS)

    Lu, Xu-bing; Liu, Zhi-guo; Wang, Yi-ping; Yang, Ying; Wang, Xiao-ping; Zhou, Hong-wei; Nguyen, Bich-yen

    2003-07-01

    Amorphous LaAlO3 (LAO) and LAOxNy (LAON) films have been prepared by pulsed laser deposition technique on Si (100) substrates and Pt coated silicon substrates. X-ray diffraction, transmission electron microscopy and differential thermal analysis investigations showed that both kinds of films remain amorphous up to a high temperature of 860 °C. Atomic force microscopy study indicated that the surface of the deposited films is very smooth with a root mean square roughness of 0.14 nm for 8 nm LAO. LAON films have a smoother surface than that of LAO films. High-resolution transmission electron microscope studies showed there often exists interfacial reaction between LAO and Si. One LAON/Si structure nearly without interfacial layer has been obtained. For LAO films, high bandgap of 6.55 eV and medium dielectric constant of 25-27 have been obtained. The LAON films showed small equivalent oxide thickness of 1.1 nm with a low leakage of 0.074 A/cm2@Vg=+1 V. It is proposed that amorphous LAON films are very promising dielectric materials for high k gate dielectric applications.

  9. Nanosized AlPO{sub 4}-5 molecular sieves and ultrathin films prepared by microwave synthesis

    SciTech Connect

    Mintova, S.; Mo, S.; Bein, T.

    1998-12-01

    Nanosized AlPO{sub 4}-5 molecular sieves and submicron AlPO{sub 4}-5 films were synthesized by microwave treatment of aluminophosphate precursors. The effects of the chemical composition of the initial solution and the conditions of microwave treatment of aluminophosphate precursors on the synthesis of nanosized AlPO{sub 4}-5 molecular sieves were investigated. The syntheses were performed under hydrothermal conditions in a microwave oven at temperatures ranging from 90 to 160 C, using various concentrations of H{sub 2}O and organic template and varying aging times. The resulting bulk products were analyzed using X-ray diffraction, scanning electron microscopy, thermogravimetry, dynamic light scattering, and nitrogen sorption. Optimal conditions for the preparation of nanosized molecular sieve crystals were found. Thin films of AlPO{sub 4}-5 on acoustic wave devices were also prepared, composed of a molecular coupling layer, AlPO{sub 4}-5 seed crystals, and a homogeneous porous film formed by microwave treatment of an aluminophosphate precursor. The initial mixture composition and microwave conditions affect the thickness and the orientation of the zeolite crystals in the films. Sorption isotherms for n-hexane and cyclohexane in these AlPO{sub 4}5 films are reported.

  10. Tunable thermal conductivity of thin films of polycrystalline AlN by structural inhomogeneity and interfacial oxidation.

    PubMed

    Jaramillo-Fernandez, J; Ordonez-Miranda, J; Ollier, E; Volz, S

    2015-03-28

    The effect of the structural inhomogeneity and oxygen defects on the thermal conductivity of polycrystalline aluminum nitride (AlN) thin films deposited on single-crystal silicon substrates is experimentally and theoretically investigated. The influence of the evolution of crystal structure, grain size, and out-of plane disorientation along the cross plane of the films on their thermal conductivity is analyzed. The impact of oxygen-related defects on thermal conduction is studied in AlN/AlN multilayered samples. Microstructure, texture, and grain size of the films were characterized by X-ray diffraction and scanning and transmission electron microscopy. The measured thermal conductivity obtained with the 3-omega technique for a single and multiple layers of AlN is in fairly good agreement with the theoretical predictions of our model, which is developed by considering a serial assembly of grain distributions. An effective thermal conductivity of 5.92 W m(-1) K(-1) is measured for a 1107.5 nm-thick multilayer structure, which represents a reduction of 20% of the thermal conductivity of an AlN monolayer with approximately the same thickness, due to oxygen impurities at the interface of AlN layers. Our results show that the reduction of the thermal conductivity as the film thickness is scaled down, is strongly determined by the structural inhomogeneities inside the sputtered films. The origin of this non-homogeneity and the effect on phonon scattering are also discussed.

  11. Perpendicular magnetic anisotropy of CoPt AlN composite film with nano-fiber structure

    NASA Astrophysics Data System (ADS)

    Chen, C. C.; Toyoshima, H.; Hashimoto, M.; Shi, J.; Nakamura, Y.

    2005-06-01

    Co Pt AlN films were prepared by sputtering a Co Pt Al composite target in Ar+N2 atmosphere. Upon thermal annealing at elevated temperatures, fcc CoPt and a-AlN are formed in the films as phases separated from one other. Both phases develop as fiber-like columnar grains vertical to the substrate and with their lateral size less than 10 nm. Because of the shape anisotropy of the magnetic fiber grains the CoPt AlN film shows a perpendicular magnetic anisotropy at a thickness equal to or larger than about 25 nm while the Co TiN [6] and CoPt TiO2 [11] films do not unless their thicknesses reach 50 and 100 nm, respectively. This suggests that both the shape anisotropy of the CoPt magnetic fiber grains and their mutual separation in an a-AlN medium work more effectively in the formation with the perpendicular magnetic anisotropy. Such a perpendicular magnetic anisotropy of the CoPt AlN film associated with the nano-scale feature makes it a very promising candidate for future recording media with ultra-high area density.

  12. Josephson effect in Nb/Al2O3/Al/MgB2 large-area thin-film heterostructures

    NASA Astrophysics Data System (ADS)

    Carapella, G.; Martucciello, N.; Costabile, G.; Ferdeghini, C.; Ferrando, V.; Grassano, G.

    2002-04-01

    We report the demonstration of dc and ac Josephson effects in Nb/Al2O3/Al/MgB2 thin-film heterostructure. The heterostructure exhibits moderately hysteretic current-voltage characteristic with a dc Josephson current branch and regular microwave-induced Shapiro steps. From conductance spectrum, a gap of about 2 meV at 7.7 K is estimated for the proximized surface of MgB2 electrode.

  13. Effect of [Al] and [In] molar ratio in solutions on the growth and microstructure of electrodeposition Cu(In,Al)Se2 films

    NASA Astrophysics Data System (ADS)

    Huang, Kuo-Chan; Liu, Chien-Lin; Hung, Pin-Kun; Houng, Mau-Phon

    2013-05-01

    In this paper, the cyclic voltammetric studies were used to realize the element's reduction potential and chemical reaction mechanism for presuming the formation routes of quaternary Cu(In,Al)Se2 crystals. Thereafter, the prior adjustment of deposited potential from -0.6 V to -1.0 V can be identified a suitable potential as co-electrodeposition. The material characteristics of Cu(In,Al)Se2 films are dominated by the percentage of aluminum content. Thus, the influence of aluminum and indium concentrations in solutions on the percentage composition, surface morphology, structural and crystal properties, and optical energy band gap of Cu(In,Al)Se2 films were investigated. Energy dispersive X-ray spectroscopy (EDS) indicated that the ratio of Al to (Al + In) in Cu(In,Al)Se2 films varied from 0.21 to 0.42 when adjusting aluminum and indium concentrations in solutions. Scanning electron microscopy (SEM) shows that the surface morphology changed from round-like structures into cauliflower-like structures and became rough when the aluminum concentration increased and indium concentration decreased in solutions. X-ray diffraction (XRD) patterns revealed three preferred growth orientations along the (1 1 2), (2 0 4/2 2 0), and (1 1 6/3 1 2) planes for all species. The (αhυ)2 versus hυ plots (UV-Visible) shows that the optical energy band gap of the Cu(In,Al)Se2 films can be successfully controlled from 1.17 eV to 1.48 eV by adjusting the aluminum and indium concentrations. Furthermore, the shift of the (1 1 2) peak in the XRD patterns and variation of optical band gap are evidence that the incorporation of aluminum atoms into the crystallitic CuInSe2 forms Cu(In,Al)Se2 crystals.

  14. Anisotropic temperature-dependent thermal conductivity by an Al2O3 interlayer in Al2O3/ZnO superlattice films

    NASA Astrophysics Data System (ADS)

    Lee, Won-Yong; Lee, Jung-Hoon; Ahn, Jae-Young; Park, Tae-Hyun; Park, No-Won; Kim, Gil-Sung; Park, Jin-Seong; Lee, Sang-Kwon

    2017-03-01

    The thermal conductivity of superlattice films is generally anisotropic and should be studied separately in the in-plane and cross-plane directions of the films. However, previous works have mostly focused on the cross-plane thermal conductivity because the electrons and phonons in the cross-plane direction of superlattice films may result in much stronger interface scattering than that in the in-plane direction. Nevertheless, it is highly desirable to perform systematic studies on the effect of interface formation in semiconducting superlattice films on both in-plane and cross-plane thermal conductivities. In this study, we determine both the in-plane and cross-plane thermal conductivities of Al2O3 (AO)/ZnO superlattice films grown by atomic layer deposition (ALD) on SiO2/Si substrates in the temperature range of 50–300 K by the four-point-probe 3-ω method. Our experimental results indicate that the formation of an atomic AO layer (0.82 nm) significantly contributes to the decrease of the cross-plane thermal conductivity of the AO/ZnO superlattice films compared with that of AO/ZnO thin films. The cross-plane thermal conductivity (0.26–0.63 W m‑1 K‑1 of the AO/ZnO superlattice films (with an AO layer of ∼0.82 nm thickness) is approximately ∼150%–370% less than the in-plane thermal conductivity (0.96–1.19 W m‑1 K‑1) of the corresponding film, implying significant anisotropy. This indicates that the suppression of the cross-plane thermal conductivity is mainly attributed to the superlattice, rather than the nanograin columnar structure in the films. In addition, we theoretically analyzed strong anisotropic behavior of the in-plane and cross-plane thermal conductivities of the AO/ZnO superlattice films in terms of temperature dependence.

  15. Anisotropic temperature-dependent thermal conductivity by an Al2O3 interlayer in Al2O3/ZnO superlattice films.

    PubMed

    Lee, Won-Yong; Lee, Jung-Hoon; Ahn, Jae-Young; Park, Tae-Hyun; Park, No-Won; Kim, Gil-Sung; Park, Jin-Seong; Lee, Sang-Kwon

    2017-03-10

    The thermal conductivity of superlattice films is generally anisotropic and should be studied separately in the in-plane and cross-plane directions of the films. However, previous works have mostly focused on the cross-plane thermal conductivity because the electrons and phonons in the cross-plane direction of superlattice films may result in much stronger interface scattering than that in the in-plane direction. Nevertheless, it is highly desirable to perform systematic studies on the effect of interface formation in semiconducting superlattice films on both in-plane and cross-plane thermal conductivities. In this study, we determine both the in-plane and cross-plane thermal conductivities of Al2O3 (AO)/ZnO superlattice films grown by atomic layer deposition (ALD) on SiO2/Si substrates in the temperature range of 50-300 K by the four-point-probe 3-ω method. Our experimental results indicate that the formation of an atomic AO layer (0.82 nm) significantly contributes to the decrease of the cross-plane thermal conductivity of the AO/ZnO superlattice films compared with that of AO/ZnO thin films. The cross-plane thermal conductivity (0.26-0.63 W m(-1) K(-1) of the AO/ZnO superlattice films (with an AO layer of ∼0.82 nm thickness) is approximately ∼150%-370% less than the in-plane thermal conductivity (0.96-1.19 W m(-1) K(-1)) of the corresponding film, implying significant anisotropy. This indicates that the suppression of the cross-plane thermal conductivity is mainly attributed to the superlattice, rather than the nanograin columnar structure in the films. In addition, we theoretically analyzed strong anisotropic behavior of the in-plane and cross-plane thermal conductivities of the AO/ZnO superlattice films in terms of temperature dependence.

  16. Atomic structure and phonons of a Pb ultrathin film on the Al(100) surface

    NASA Astrophysics Data System (ADS)

    Rusina, G. G.; Borisova, S. D.; Chulkov, E. V.

    2014-10-01

    The atomic and phonon structures of a Pb ultrathin film on the Al(100) surface have been theoretically studied. Surface relaxation, local density of vibrational states, and polarization of the phonon modes of adatoms and atoms of a substrate have been discussed. It has been shown that the adsorption of Pb results in the oscillating relaxation of the surface of the substrate and warping of the structure in subsurface layers. Comparative analysis of the vibrational characteristics of the pure surface of the substrate and the surface with adatoms has shown that the adsorptive interaction in the system and its dynamic stability are governed by new vibrational modes that are not inherent in pure Al and Pb surfaces.

  17. Electrical properties of the amorphous interfacial layer between Al electrodes and epitaxial NiO films

    SciTech Connect

    Hyuck Jang, Jae; Kwon, Ji-Hwan; Kim, Miyoung; Ran Lee, Seung; Char, Kookrin

    2012-04-23

    The amorphous interfacial layer (a-IL) between Al electrode and epitaxial NiO films were studied using electron energy-loss spectroscopy (EELS) and energy-dispersive x-ray spectroscopy. Two distinct properties were found in the a-IL, i.e., a lower metallic and an upper insulating layer. EELS results revealed that the metallic Ni atoms were responsible for the conducting nature of the lower oxide amorphous layer. The resistance behavior of Al/a-IL/epi-NiO was changed from a high to a low resistance state after forming process. The resistance change could be explained by the formation of a nanocrystalline metal alloy in the insulating amorphous layer.

  18. Skin Dosimetry in Radiotherapy of Breast Cancer: a Comparison between EBT and EBT3 Radiochromic Films

    PubMed Central

    Bahreyni Toosi, M.T.; Mohamadian, N.; Ghorbani, M.; Khorshidi, F.; Akbari, F.; Knaup, C.

    2016-01-01

    Objective Radiochromic EBT3 film is a later generation of radiochromic films. The aim of this study is to compare EBT and EBT3 radiochromic films in radiotherapy fields of breast cancer. Methods A RANDO phantom was irradiated by a 6 MV Siemens Primus linac with medial and lateral fields of radiotherapy of breast cancer. Dosimetry was performed in various points in the fields using EBT and EBT3 films. Films were scanned by a Microtek color scanner. Dose values from two films in corresponding points were compared. Results In the investigation of calibration, net optical density (NOD) of EBT radiochromic is more than the EBT3 radiochromic film. The highest percentage difference between NODs of two films is related to 0.75 Gy and equals to 14.19%. The lowest value is related to 0.2 Gy dose and is equal to 3.31%. The highest percentage difference between two films on the RANDO phantom in breast cancer fields is 13.51% and the minimum value is equal to 0.33%. Conclusion From the comparison between the two films, most of the points show differences in dose in the measurements in fields of breast cancer radiotherapy. These differences are attributed to the thickness of the active layers, the overall thickness of the films, and the difference in the calibration fitted functions. The advantage of EBT film over EBT3 is a higher sensitivity; on the other hand EBT3 film allows to use its both sides in the scanning process and it is a new version of this film type. PMID:27672625

  19. Atomic force microscopy identification of Al-sites on ultrathin aluminum oxide film on NiAl(110).

    PubMed

    Li, Yan Jun; Brndiar, J; Naitoh, Y; Sugawara, Y; Štich, I

    2015-12-18

    Ultrathin alumina film formed by oxidation of NiAl(110) was studied by non-contact atomic force microscopy in an ultra high vacuum at room temperature with the quest to provide the ultimate understanding of structure and bonding of this complicated interface. Using a very stiff Si cantilever with significantly improved resolution, we have obtained images of this system with unprecedented resolution, surpassing all the previous results. In particular, we were able to unambiguously resolve all the differently coordinated aluminum atoms. This is of importance as the previous images provide very different image patterns, which cannot easily be reconciled with the existing structural models. Experiments are supported by extensive density functional theory modeling. We find that the system is strongly ionic and the atomic force microscopy images can reliably be understood from the electrostatic potential which provides an image model in excellent agreement with the experiments. However, in order to resolve the finer contrast features we have proposed a more sophisticated model based on more realistic approximants to the incommensurable alumina interface.

  20. X-ray Reciprocal Space Mapping of Graded Al x Ga1 - x N Films and Nanowires.

    PubMed

    Stanchu, Hryhorii V; Kuchuk, Andrian V; Kladko, Vasyl P; Ware, Morgan E; Mazur, Yuriy I; Zytkiewicz, Zbigniew R; Belyaev, Alexander E; Salamo, Gregory J

    2016-12-01

    The depth distribution of strain and composition in graded Al x Ga1 - x N films and nanowires (NWs) are studied theoretically using the kinematical theory of X-ray diffraction. By calculating [Formula: see text] reciprocal space maps (RSMs), we demonstrate significant differences in the intensity distributions from graded Al x Ga1 - x N films and NWs. We attribute these differences to relaxation of the substrate-induced strain on the NWs free side walls. Finally, we demonstrate that the developed X-ray reciprocal space map model allows for reliable depth profiles of strain and Al composition determination in both Al x Ga1 - x N films and NWs.

  1. AlN thin films grown on epitaxial 3C-SiC (100) for piezoelectric resonant devices

    SciTech Connect

    Lin, Chih-Ming; Senesky, Debbie G.; Pisano, Albert P.; Lien, Wei-Cheng; Felmetsger, Valery V.; Hopcroft, Matthew A.

    2010-10-04

    Highly c-axis oriented heteroepitaxial aluminum nitride (AlN) films were grown on epitaxial cubic silicon carbide (3C-SiC) layers on Si (100) substrates using alternating current reactive magnetron sputtering at temperatures between approximately 300-450 deg. C. The AlN films were characterized by x-ray diffraction, scanning electron microscope, and transmission electron microscopy. A two-port surface acoustic wave device was fabricated on the AlN/3C-SiC/Si composite structure, and an expected Rayleigh mode exhibited a high acoustic velocity of 5200 m/s. The results demonstrate the potential of utilizing AlN films on epitaxial 3C-SiC layers to create piezoelectric resonant devices.

  2. Structure and Composition Analysis of Cu(In,Al)Se2 Thin Films Prepared by Rapid Thermal Selenization

    NASA Astrophysics Data System (ADS)

    Lee, Shi-Wei; Tseng, Bae-Heng

    2012-10-01

    Thin films of CuIn1-xAlxSe2 (CIAS) were prepared by stacked elemental precursor layers in an inert ambient. The stacking sequence of precursor layers may affect the kinetics of phase formation. The soda lime glass (SLG)/Cu/Al/In/Se sample heated at 750 °C for 30 s with a temperature ramp rate of 15 °C/s may react to form single-phase CIAS thin films with a chemical composition fairly close to the predetermined value. Transmission electron microscopy (TEM) analysis of a selenized film prepared at 600 °C revealed the segregation of the content of Al to the substrate side and a relatively large variation of Al distributed in a lateral direction as compared with those of other elements. Changing the Cu and Al layer sequence may affect the reaction paths and lead to the formation of a mixture of two CIAS quaternary phases with different compositions.

  3. Dopant-induced bandgap shift in Al-doped ZnO thin films prepared by spray pyrolysis

    NASA Astrophysics Data System (ADS)

    Hung-Chun Lai, Henry; Basheer, Tahseen; Kuznetsov, Vladimir L.; Egdell, Russell G.; Jacobs, Robert M. J.; Pepper, Michael; Edwards, Peter P.

    2012-10-01

    A series of 1 at. % Al-doped ZnO (AZO) films were deposited onto glass substrates by a spray pyrolysis technique. We find that the observed blue shift in the optical bandgap of 1% AZO films is dominated by the Burstein Moss effect. The Fermi level for an 807 nm thick AZO film rose by some 0.16 eV with respect to the edge of the conduction band. By controlling the film thickness, all AZO films exhibit the same lattice strain values. The influence of strain-induced bandgap shift was excluded by selecting films with nearly the same level of bandgap volume-deformation potentials, and the differences in out-plain strain and in-plain stress remained effectively constant.

  4. Effect of substrate temperature on the properties of transparent conductive ZnO:Al thin films prepared by RF sputtering

    SciTech Connect

    Deng Xueran; Deng Hong; Wei Min; Chen Jinju; Chen Han

    2011-09-15

    Transparent conductive ZnO:Al thin films were successfully deposited on glass substrates via radio frequency sputtering with a ceramic target in ambient argon. X-ray diffraction, profilometry, Hall-effect measurement, and spectrophotometry were employed to investigate the structural, electrical, and optical properties of films. The electrical and optical properties were found to be strongly dependent on the crystalline quality, grain size, and thickness of the films. X-ray diffraction spectra indicated that the crystalline quality of the films improved and grains became larger with increasing substrate temperature. Transmission spectra revealed that films possessed a higher transmittance in the visible range with an increase of the substrate temperature, but the band gap did not broaden obviously. Films with a resistivity of about 2.66 x 10{sup -4}{Omega} cm and an average transmittance above 90% in the visible range were obtained at the optimum temperature of 450 deg. C.

  5. Effects of NIR annealing on the characteristics of al-doped ZnO thin films prepared by RF sputtering.

    PubMed

    Jun, Min-Chul; Koh, Jung-Hyuk

    2012-06-06

    Aluminum-doped zinc oxide (AZO) thin films have been deposited on glass substrates by employing radio frequency (RF) sputtering method for transparent conducting oxide applications. For the RF sputtering process, a ZnO:Al2O3 (2 wt.%) target was employed. In this paper, the effects of near infrared ray (NIR) annealing technique on the structural, optical, and electrical properties of the AZO thin films have been researched. Experimental results showed that NIR annealing affected the microstructure, electrical resistance, and optical transmittance of the AZO thin films. X-ray diffraction analysis revealed that all films have a hexagonal wurtzite crystal structure with the preferentially c-axis oriented normal to the substrate surface. Optical transmittance spectra of the AZO thin films exhibited transmittance higher than about 80% within the visible wavelength region, and the optical direct bandgap (Eg) of the AZO films was increased with increasing the NIR energy efficiency.

  6. Comparison of topotactic fluorination methods for complex oxide films

    SciTech Connect

    Moon, E. J. Choquette, A. K.; Huon, A.; Kulesa, S. Z.; May, S. J.; Barbash, D.

    2015-06-01

    We have investigated the synthesis of SrFeO{sub 3−α}F{sub γ} (α and γ ≤ 1) perovskite films using topotactic fluorination reactions utilizing poly(vinylidene fluoride) as a fluorine source. Two different fluorination methods, a spin-coating and a vapor transport approach, were performed on as-grown SrFeO{sub 2.5} films. We highlight differences in the structural, compositional, and optical properties of the oxyfluoride films obtained via the two methods, providing insight into how fluorination reactions can be used to modify electronic and optical behavior in complex oxide heterostructures.

  7. Enhanced Performance in Al-Doped ZnO Based Transparent Flexible Transparent Thin-Film Transistors Due to Oxygen Vacancy in ZnO Film with Zn-Al-O Interfaces Fabricated by Atomic Layer Deposition.

    PubMed

    Li, Yang; Yao, Rui; Wang, Huanhuan; Wu, Xiaoming; Wu, Jinzhu; Wu, Xiaohong; Qin, Wei

    2017-04-05

    Highly conductive and optical transparent Al-doped ZnO (AZO) thin film composed of ZnO with a Zn-Al-O interface was fabricated by thermal atomic layer deposition (ALD) method. The as-prepared AZO thin film exhibits excellent electrical and optical properties with high stability and compatibility with temperature-sensitive flexible photoelectronic devices; film resistivity is as low as 5.7 × 10(-4) Ω·cm, the carrier concentration is high up to 2.2 × 10(21) cm(-3). optical transparency is greater than 80% in a visible range, and the growth temperature is below 150 °C on the PEN substrate. Compared with the conventional AZO film containing by a ZnO-Al2O3 interface, we propose that the underlying mechanism of the enhanced electrical conductivity for the current AZO thin film is attributed to the oxygen vacancies deficiency derived from the free competitive growth mode of Zn-O and Al-O bonds in the Zn-Al-O interface. The flexible transparent transistor based on this AZO electrode exhibits a favorable threshold voltage and Ion/Ioff ratio, showing promising for use in high-resolution, fully transparent, and flexible display applications.

  8. Properties and microstructure of thermo-pressed wheat gluten films: a comparison with cast films.

    PubMed

    Mangavel, C; Rossignol, N; Perronnet, A; Barbot, J; Popineau, Y; Guéguen, J

    2004-01-01

    Wheat gluten films were prepared by thermo-pressing, and their mechanical properties were compared to those of cast films. The stress-strain relationship was established for films with various amounts of glycerol. Both relationships were quite different, revealing a different network organization. Thermo-pressed films presented higher stress values than cast films, but the effect of the glycerol amount was similar in both cases, an increase of the glycerol amount leading to a decrease of both films stress. The glycerol influence on the strain at break of thermo-pressed films was very limited, with strain values reaching a maximum around 200%. The role of disulfide bridges on themomoulded films mechanical properties was investigated, and it was shown that some rearrangements and a significative protein insolubilization occurred during the process. The effective flow porosity of the protein network for thermo-pressed films was estimated by water capillary rise measurements to about 7%. Scanning electron microscopy was used to obtain some information about the microstructure of both cast and thermo-pressed films.

  9. Far-infrared transmission in GaN, AlN, and AlGaN thin films grown by molecular beam epitaxy

    SciTech Connect

    Ibanez, J.; Hernandez, S.; Alarcon-Llado, E.; Cusco, R.; Artus, L.; Novikov, S. V.; Foxon, C. T.; Calleja, E.

    2008-08-01

    We present a far-infrared transmission study on group-III nitride thin films. Cubic GaN and AlN layers and c-oriented wurtzite GaN, AlN, and Al{sub x}Ga{sub 1-x}N (x<0.3) layers were grown by molecular beam epitaxy on GaAs and Si(111) substrates, respectively. The Berreman effect allows us to observe simultaneously the transverse optic and the longitudinal optic phonons of both the cubic and the hexagonal films as transmission minima in the infrared spectra acquired with obliquely incident radiation. We discuss our results in terms of the relevant electromagnetic theory of infrared transmission in cubic and wurtzite thin films. We compare the infrared results with visible Raman-scattering measurements. In the case of films with low scattering volumes and/or low Raman efficiencies and also when the Raman signal of the substrate material obscures the weaker peaks from the nitride films, we find that the Berreman technique is particularly useful to complement Raman spectroscopy.

  10. Electrochemical deposition and microstructural characterization of AlCrFeMnNi and AlCrCuFeMnNi high entropy alloy thin films

    NASA Astrophysics Data System (ADS)

    Soare, V.; Burada, M.; Constantin, I.; Mitrică, D.; Bădiliţă, V.; Caragea, A.; Târcolea, M.

    2015-12-01

    Al-Cr-Fe-Mn-Ni and Al-Cr-Cu-Fe-Mn-Ni high entropy alloy thin films were prepared by potentiostatic electrodeposition and the microstructure of the deposits was investigated. The thin films were co-deposited in an electrolyte based on a DMF (N,N-dimethylformamide)-CH3CN (acetonitrile) organic compound. The energy dispersive spectrometry investigation (EDS) indicated that all the five respectively six elements were successfully co-deposited. The scanning electron microscopy (SEM) analysis revealed that the film consists of compact and uniform particles with particle sizes of 500 nm to 4 μm. The X-ray diffractometry (XRD) patterns indicated that the as-deposited thin films were amorphous. Body-centered-cubic (BCC) structures were identified by XRD after the films were annealed at various temperatures under inert Ar atmosphere. The alloys adhesion on the substrate was determined by the scratch-testing method, with higher values obtained for the Al-Cr-Cu-Fe-Mn-Ni alloy.

  11. Surface and physical characteristics of ZnO:Al nanostructured films

    NASA Astrophysics Data System (ADS)

    Fang, Te-Hua; Kang, Shao-Hui

    2009-06-01

    Structural and surface characterizations of the ZnO:Al nanostructured films were achieved by means of x-ray diffraction, scanning electron microscope, atomic force microscope, and nanoindentation measurements. The films exhibited hydrophobic behavior with contact angles of about 133.2°-142.7°, and a decrease in the hardness and Young's modulus with decreasing indentation depths. Buckling behavior took place during the indentation process, and the fracture strength of the films was also investigated. The results show that the phase transformation from zinc blende to wurtzite structure. Also, it should be correlated with belongs to chairtype Peierls distortion with up to 38° tilting (001) rock-salt structure along the (1¯21¯0) plane and followed tilting along the (101¯0) plane by about 32° for a fair match with (101¯0) Zn. A nanogenerator with ZnO nanorods was then fabricated to define its piezoelectric characteristics. The power density per unit substrate area is about 18.3 μW/mm2.

  12. Enhanced hardness in epitaxial TiAlScN alloy thin films and rocksalt TiN/(Al,Sc)N superlattices

    SciTech Connect

    Saha, Bivas; Lawrence, Samantha K.; Bahr, David F.; Schroeder, Jeremy L.; Birch, Jens; Sands, Timothy D.

    2014-10-13

    High hardness TiAlN alloys for wear-resistant coatings exhibit limited lifetimes at elevated temperatures due to a cubic-AlN to hexagonal-AlN phase transformation that leads to decreasing hardness. We enhance the hardness (up to 46 GPa) and maximum operating temperature (up to 1050 °C) of TiAlN-based coatings by alloying with scandium nitride to form both an epitaxial TiAlScN alloy film and epitaxial rocksalt TiN/(Al,Sc)N superlattices on MgO substrates. The superlattice hardness increases with decreasing period thickness, which is understood by the Orowan bowing mechanism of the confined layer slip model. These results make them worthy of additional research for industrial coating applications.

  13. Comparison of metallization systems for thin film hybrid microcircuits

    SciTech Connect

    Hines, R.A.; Raut, M.K.

    1980-08-01

    Five metallization systems were evaluated for fabricating thin film hybrid microcircuits. The titanium/palladium/electroplated gold system proved superior in terms of thermocompression bondability, corrosion resistance, and solderability.

  14. New type of Schottky diode-based Cu-Al-Mn-Cr shape memory material films

    NASA Astrophysics Data System (ADS)

    Aksu Canbay, C.; Dere, A.; Mensah-Darkwa, Kwadwo; Al-Ghamdi, Ahmed; Karagoz Genç, Z.; Gupta, R. K.; Yakuphanoglu, F.

    2016-07-01

    Cr-doped CuAlMn shape memory alloys were produced by arc melting method. The effects of Cr content on microstructure and transformation parameters of were investigated. The alloys were characterized by X-ray analysis, optical microscope observations and differential scanning calorimetry measurements. The grain size of the alloys was decreased by the addition of Cr into CuAlMn alloy system. The martensite transformation temperature was shifted both the lower temperature and higher temperature with the addition of chromium. This change was explained on the basis of the change in the thermodynamics such as enthalpy, entropy and activation energy values. The obtained results indicate that the phase transformation temperatures of the CuAlMn alloy system can be controlled by addition of Cr. We fabricated a Schottky barrier diode and observed that ideality factor and barrier height increase with increasing temperature. The diodes exhibited a thermal sensor behavior. This indicates that Schottky diode-based Cu-Al-Mn-Cr shape memory material films can be used as a sensor in high-temperature measurement applications.

  15. Al- and Cu-doped BaSi2 films on Si(111) substrate by molecular beam epitaxy and evaluation of depth profiles of Al and Cu atoms

    NASA Astrophysics Data System (ADS)

    Ajmal Khan, M.; Takeishi, M.; Matsumoto, Y.; Saito, T.; Suemasu, T.

    The main objective of the present work is to evaluate and compare the depth profiles of Al and Cu atoms in in-situ doped BaSi2. Furthermore, it is also desired to investigate and compare the carrier concentration of Al-doped as well as Cu-doped BaSi2 films and qualify as a potential dopant-candidate for more efficient solar cells of BaSi2. During the experiment, reactive deposition epitaxy and molecular beam epitaxy were used to develop the samples. X-ray diffraction (XRD) measurements and secondary ion mass spectroscopy (SIMS), were used to determine the structure, depth profile and composition of the already grown films. The electrical properties were characterized by Hall measurement using the van der Pauw method. In case of Al-doped BaSi2 films, it was not encouraging result due to diffusion and segregation of Al in both the surface and BaSi2/ Si interface regions. On the other hand, those phenomena were not observed for Cu-doped BaS2 films. Heavily Cu-doped BaSi2 showed n+ conductivity, differently from our prediction.

  16. Stress competition and vortex magnetic anisotropy in FeCoAlO high-frequency soft magnetic films with gradient Al-O contents

    NASA Astrophysics Data System (ADS)

    Li, Shandong; Du, Honglei; Xue, Qian; Xie, Shiming; Liu, Ming; Shao, Weiquan; Xu, Jie; Nan, Tianxiang; Sun, Nian X.; Duh, Jenq-Gong

    2013-05-01

    A vortex magnetic anisotropy (VMA) was formed via the competition of residual stresses between radial and tangential directions in the FeCoAlO soft magnetic films (SMFs), prepared by a composition gradient sputtering (CGS) method. The VMA of the magnetic films gives rise to a rotating excitation direction of the ferromagnetic resonance. As a results, the as-deposited FeCoAlO films exhibit good high-frequency ferromagnetic properties with high permeability about 100, cut-off frequency over 2 GHz, and Qm factor over 50 along its individual excitation direction. These SMFs with the VMA are promising in the integration with the circular spiral inductors due to the geometrical match between the excitation direction of the SMFs and the circular inductor lines.

  17. Perpendicular magnetic anisotropy and magnetization dynamics in oxidized CoFeAl films.

    PubMed

    Wu, Di; Zhang, Zhe; Li, Le; Zhang, Zongzhi; Zhao, H B; Wang, J; Ma, B; Jin, Q Y

    2015-07-20

    Half-metallic Co-based full-Heusler alloys with perpendicular magnetic anisotropy (PMA), such as Co2FeAl in contact with MgO, are receiving increased attention recently due to its full spin polarization for high density memory applications. However, the PMA induced by MgO interface can only be realized for very thin magnetic layers (usually below 1.3 nm), which would have strong adverse effects on the material properties of spin polarization, Gilbert damping parameter, and magnetic stability. In order to solve this issue, we fabricated oxidized Co50Fe25Al25 (CFAO) films with proper thicknesses without employing the MgO layer. The samples show controllable PMA by tuning the oxygen pressure (PO2) and CFAO thickness (tCFAO), large perpendicular anisotropy field of ~8.0 kOe can be achieved at PO2 = 12% for the sample of tCFAO = 2.1 nm or at PO2 = 7% for tCFAO = 2.8 nm. The loss of PMA at thick tCFAO or high PO2 results mainly from the formation of large amount of CoFe oxides, which are superparamagnetic at room temperature but become hard magnetic at low temperatures. The magnetic CFAO films, with strong PMA in a relatively wide thickness range and small intrinsic damping parameter below 0.028, would find great applications in developing advanced spintronic devices.

  18. Twin symmetry texture of energetically condensed niobium thin films on sapphire substrate (a-plane Al2O3)

    NASA Astrophysics Data System (ADS)

    Zhao, X.; Phillips, L.; Reece, C. E.; Seo, Kang; Krishnan, M.; Valderrama, E.

    2011-08-01

    An energetic condensation technique, cathodic arc discharge deposition, is used to grow epitaxial Niobium (Nb) thin films on a-plane sapphire (hexagonal-closed-packed Al2O3) at moderate substrate heating temperature (<400 °C). The epitaxial Nb(110)/Al2O3(1,1,-2,0) thin films reached a maximum residual resistance ratio (RRR) value 214, despite using a reactor-grade Nb cathode source whose RRR was only 30. The measurements suggest that the film's density of impurities and structural defects are lower when compared to Nb films produced by other techniques, such as magnetron sputtering, e-beam evaporation or molecular-beam-epitaxy. At lower substrate temperature, textured polycrystalline Nb thin films were created, and the films might have twin symmetry grains with {110} orientations in-plane. The texture was revealed by x-ray diffraction pole figures. The twin symmetry might be caused by a combination effect of the Nb/Al2O3 three-dimensional epitaxial relationship ("3D-Registry" Claassen's nomenclature) and the "Volmer-Weber" (Island) growth model. However, pole figures obtained by electron backscattering diffraction (EBSD) found no twin symmetry on the thin films' topmost surface (˜50 nm in depth). The EBSD pole figures showed only one Nb{110} crystal plane orientation. A possible mechanism is suggested to explain the differences between the bulk (XRD) and surface (EBSD) pole figures.

  19. Low substrate temperature deposition of transparent and conducting ZnO:Al thin films by RF magnetron sputtering

    NASA Astrophysics Data System (ADS)

    Waykar, Ravindra; Amit, Pawbake; Kulkarni, Rupali; Jadhavar, Ashok; Funde, Adinath; Waman, Vaishali; Dewan, Rupesh; Pathan, Habib; Jadkar, Sandesh

    2016-04-01

    Transparent and conducting Al-doped ZnO (ZnO:Al) films were prepared on glass substrate using the RF sputtering method at different substrate temperatures from room temperature (RT) to 200 °C. The structural, morphological, electrical and optical properties of these films were investigated using a variety of characterization techniques such as low angle XRD, Raman spectroscopy, X-ray photoelectron spectroscopy (XPS), field-emission scanning electron microscopy (FE-SEM), Hall measurement and UV-visible spectroscopy. The electrical properties showed that films deposited at RT have the lowest resistivity and it increases with an increase in the substrate temperature whereas carrier mobility and concentration decrease with an increase in substrate temperature. Low angle XRD and Raman spectroscopy analysis reavealed that films are highly crystalline with a hexagonal wurtzite structure and a preferred orientation along the c-axis. The FE-SEM analysis showed that the surface morphology of films is strongly dependent on the substrate temperature. The band gap decreases from 3.36 to 3.29 eV as the substrate temperature is increased from RT to 200 °C. The fundamental absorption edge in the UV region shifts towards a longer wavelength with an increase in substrate temperature and be attributed to the Burstein-Moss shift. The synthesized films showed an average transmission (> 85%) in the visible region, which signifies that synthesized ZnO:Al films can be suitable for display devices and solar cells as transparent electrodes.

  20. Growth and Characterization of Polyimide-Supported AlN Films for Flexible Surface Acoustic Wave Devices

    NASA Astrophysics Data System (ADS)

    Li, Qi; Liu, Hongyan; Li, Gen; Zeng, Fei; Pan, Feng; Luo, Jingting; Qian, Lirong

    2016-06-01

    Highly c-axis oriented aluminum nitride (AlN) films, which can be used in flexible surface acoustic wave (SAW) devices, were successfully deposited on polyimide (PI) substrates by direct current reactive magnetron sputtering without heating. The sputtering power, film thickness, and deposition pressure were optimized. The characterization studies show that at the optimized conditions, the deposited AlN films are composed of columnar grains, which penetrate through the entire film thickness (~2 μm) and exhibit an excellent (0002) texture with a full width at half maximum value of the rocking curve equal to 2.96°. The film surface is smooth with a root mean square value of roughness of 3.79 nm. SAW prototype devices with a center frequency of about 520 MHz and a phase velocity of Rayleigh wave of about 4160 m/s were successfully fabricated using the AlN/PI composite structure. The obtained results demonstrate that the highly c-axis oriented AlN films with a smooth surface and low stress can be produced on relatively rough, flexible substrates, and this composite structure can be possibly used in flexible SAW devices.

  1. Emotion Elicitation: A Comparison of Pictures and Films

    PubMed Central

    Uhrig, Meike K.; Trautmann, Nadine; Baumgärtner, Ulf; Treede, Rolf-Detlef; Henrich, Florian; Hiller, Wolfgang; Marschall, Susanne

    2016-01-01

    Pictures and film clips are widely used and accepted stimuli to elicit emotions. Based on theoretical arguments it is often assumed that the emotional effects of films exceed those of pictures, but to date this assumption has not been investigated directly. The aim of the present study was to compare pictures and films in terms of their capacity to induce emotions verified by means of explicit measures. Stimuli were (a) single pictures presented for 6 s, (b) a set of three consecutive pictures with emotionally congruent contents presented for 2 s each, (c) short film clips with a duration of 6 s. A total of 144 participants rated their emotion and arousal states following stimulus presentation. Repeated-measures ANOVAs revealed that the film clips and 3-picture version were as effective as the classical 1-picture method to elicit positive emotions, however, modulation toward positive valence was little. Modulation toward negative valence was more effective in general. Film clips were less effective than pictorial stimuli in producing the corresponding emotion states (all p < 0.001) and were less arousing (all p ≤ 0.02). Possible reasons for these unexpected results are discussed. PMID:26925007

  2. Mid-Infrared Spectroscopy Platform Based on GaAs/AlGaAs Thin-Film Waveguides and Quantum Cascade Lasers.

    PubMed

    Sieger, Markus; Haas, Julian; Jetter, Michael; Michler, Peter; Godejohann, Matthias; Mizaikoff, Boris

    2016-03-01

    The performance and versatility of GaAs/AlGaAs thin-film waveguide technology in combination with quantum cascade lasers for mid-infrared spectroscopy in comparison to conventional FTIR spectroscopy is presented. Infrared radiation is provided by a quantum cascade laser (QCL) spectrometer comprising four tunable QCLs providing a wavelength range of 5-11 μm (1925-885 cm(-1)) within a single collimated beam. Epitaxially grown GaAs slab waveguides serve as optical transducer for tailored evanescent field absorption analysis. A modular waveguide mounting accessory specifically designed for on-chip thin-film GaAs waveguides is presented serving as a flexible analytical platform in lieu of conventional attenuated total reflection (ATR) crystals uniquely facilitating macroscopic handling and alignment of such microscopic waveguide structures in real-world application scenarios.

  3. Magnetic properties and anisotropic coercivity in nanogranular films of Co/Al2O3 above the percolation limit

    NASA Astrophysics Data System (ADS)

    Kulyk, M. M.; Kalita, V. M.; Lozenko, A. F.; Ryabchenko, S. M.; Stognei, O. V.; Sitnikov, A. V.; Korenivski, V.

    2014-08-01

    Magnetic properties of nanogranular ferromagnetic Co/Al2O3 films with 74.5 at% Co, which is above the percolation limit, are investigated. It is established that the films have perpendicular magnetic anisotropy and a weaker in-plane anisotropy. The magnetization curves show that the film consists of two magnetic components: a dominating contribution from magneto-anisotropic isolated grains with the anisotropy axis perpendicular to the film plane and a weaker contribution from the percolated part of the film. This two-component magnetic composition of the films, with the dominating contribution from the nanograins, is confirmed by transmission electron microscopy as well as by ferromagnetic resonance spectroscopy. It is further established that the coercive field of the film is almost entirely determined by the percolated part of the film. In this, the angular dependence of the coercive force, Hc (θH), is essentially proportional to sin-1θH, where θH is the angle between the applied field and the film's normal. However, for θH → 0, Hc (θH) there is a narrow minimum with Hc approaching zero. Such non-linear dependence agrees well with our modelling results for a two-component magnetic system of the film, where the non-percolated nanograins have a distinct perpendicular anisotropy. The reported results should be important for in-depth characterization and understanding the magnetism and anisotropy in inhomogeneous systems as well as for applications, specifically in perpendicular magnetic recording.

  4. Characteristics of the Energetic Micro-initiator Through Integrating Al/Ni Nano-multilayers with Cu Film Bridge

    NASA Astrophysics Data System (ADS)

    Zhang, Yuxin; Jiang, Hongchuan; Zhao, Xiaohui; Yan, Yichao; Zhang, Wanli; Li, Yanrong

    2017-01-01

    An energetic micro-initiator through integrating Al/Ni nano-multilayers with Cu film bridge was investigated in this study. The Cu film bridge was initially fabricated with wet etching, and Al/Ni nano-multilayers were alternately deposited on the surface of Cu film bridge by magnetron sputtering. The periodic layer structure of Al/Ni nano-multilayers was verified by scanning electron microscopy. The exothermic reaction in Al/Ni nano-multilayers can be initiated with onset reaction temperature as low as 503 K, and the total reaction heat is about 774.6 J/g. This energetic micro-initiator exhibited improved performances with lower threshold voltage, smaller initiation energy, and higher explosion temperature compared with Cu film bridge. An extra violent explosion phenomenon with longer duration time and larger quantities of ejected product particles was detected on this energetic micro-initiator by high-speed camera. Overall, the electric explosion performances of Cu film bridge can be improved evidently with the integration of Al/Ni nano-multilayers.

  5. Characteristics of the Energetic Micro-initiator Through Integrating Al/Ni Nano-multilayers with Cu Film Bridge.

    PubMed

    Zhang, Yuxin; Jiang, Hongchuan; Zhao, Xiaohui; Yan, Yichao; Zhang, Wanli; Li, Yanrong

    2017-12-01

    An energetic micro-initiator through integrating Al/Ni nano-multilayers with Cu film bridge was investigated in this study. The Cu film bridge was initially fabricated with wet etching, and Al/Ni nano-multilayers were alternately deposited on the surface of Cu film bridge by magnetron sputtering. The periodic layer structure of Al/Ni nano-multilayers was verified by scanning electron microscopy. The exothermic reaction in Al/Ni nano-multilayers can be initiated with onset reaction temperature as low as 503 K, and the total reaction heat is about 774.6 J/g. This energetic micro-initiator exhibited improved performances with lower threshold voltage, smaller initiation energy, and higher explosion temperature compared with Cu film bridge. An extra violent explosion phenomenon with longer duration time and larger quantities of ejected product particles was detected on this energetic micro-initiator by high-speed camera. Overall, the electric explosion performances of Cu film bridge can be improved evidently with the integration of Al/Ni nano-multilayers.

  6. W:Al2O3 nanocomposite thin films with tunable optical properties prepared by atomic layer deposition

    DOE PAGES

    Babar, Shaista; Mane, Anil U.; Yanguas-Gil, Angel; ...

    2016-06-17

    Here, a systematic alteration in the optical properties of W:Al2O3 nanocomposite films is demonstrated by precisely varying the W cycle percentage (W%) from 0 to 100% in Al2O3 during atomic layer deposition. The direct and indirect band energies of the nanocomposite materials decrease from 5.2 to 4.2 eV and from 3.3 to 1.8 eV, respectively, by increasing the W% from 10 to 40. X-ray absorption spectroscopy reveals that, for W% < 50, W is present in both metallic and suboxide states, whereas, for W% ≥ 50, only metallic W is seen. This transition from dielectric to metallic character at W%more » ~ 50 is accompanied by an increase in the electrical and thermal conductivity and the disappearance of a clear band gap in the absorption spectrum. The density of the films increases monotonically from 3.1 g/cm3 for pure Al2O3 to 17.1 g/cm3 for pure W, whereas the surface roughness is greatest for the W% = 50 films. The W:Al2O3 nanocomposite films are thermally stable and show little change in optical properties upon annealing in air at 500 °C. These W:Al2O3 nanocomposite films show promise as selective solar absorption coatings for concentrated solar power applications.« less

  7. Thermal Stability of the Dynamic Magnetic Properties of FeSiAl-Al2O3 and FeSiAl-SiO2 Films Grown by Gradient-Composition Sputtering Technique

    NASA Astrophysics Data System (ADS)

    Zhong, Xiaoxi; Phuoc, Nguyen N.; Soh, Wee Tee; Ong, C. K.; Peng, Long; Li, Lezhong

    2017-01-01

    We carry out a systematic investigation of the dynamic magnetic properties of FeSiAl-Al2O3 and FeSiAl-SiO2 thin films prepared by gradient-composition deposition technique with respect to temperature in the range of 300 K to 420 K. It was found that the magnetic anisotropy field ( H K) and ferromagnetic resonance frequency ( f FMR) are increased with increasing deposition angle ( β) due to the enhancement of stress ( σ) when concentrations of Al and O or Si and O are increased. The thermal stability of FeSiAl-Al2O3 films show a very interesting behavior with the magnetic anisotropy increasing with temperature when the deposition angle is increased. In contrast, when the deposition angle is lower, the usual trend of decreasing magnetic anisotropy with increasing temperature is observed. Moreover, the temperature-dependent behaviors of the dynamic permeability and effective Gilbert damping coefficient ( α eff) for FeSiAl-Al2O3 and FeSiAl-SiO2 films at different deposition angles are discussed in detail.

  8. Clinical comparison of CR and screen film for imaging the critically ill neonate

    NASA Astrophysics Data System (ADS)

    Andriole, Katherine P.; Brasch, Robert C.; Gooding, Charles A.; Gould, Robert G.; Cohen, Pierre A.; Rencken, Ingo R.; Huang, H. K.

    1996-05-01

    A clinical comparison of computed radiography (CR) versus screen-film for imaging the critically-ill neonate is performed, utilizing a modified (hybrid) film cassette containing a CR (standard ST-V) imaging plate, a conventional screen and film, allowing simultaneous acquisition of perfectly matched CR and plain film images. For 100 portable neonatal chest and abdominal projection radiographs, plain film was subjectively compared to CR hardcopy. Three pediatric radiologists graded overall image quality on a scale of one (poor) to five (excellent), as well as visualization of various anatomic structures (i.e., lung parenchyma, pulmonary vasculature, tubes/lines) and pathological findings (i.e., pulmonary interstitial emphysema, pleural effusion, pneumothorax). Results analyzed using a combined kappa statistic of the differences between scores from each matched set, combined over the three readers showed no statistically significant difference in overall image quality between screen- film and CR (p equals 0.19). Similarly, no statistically significant difference was seen between screen-film and CR for anatomic structure visualization and for visualization of pathological findings. These results indicate that the image quality of CR is comparable to plain film, and that CR may be a suitable alternative to screen-film imaging for portable neonatal chest and abdominal examinations.

  9. Study of the optical properties of CuAlS2 thin films prepared by two methods

    NASA Astrophysics Data System (ADS)

    Ahmad, S. M.

    2017-04-01

    CuAlS2 thin films were successfully deposited on glass substrates using two methods: chemical spray pyrolysis (CSP) and chemical bath deposition (CBD). It was confirmed from the X-ray diffraction (XRD) analysis that CSP films exhibited a polycrystalline nature while amorphous nature was diagnosed for CBD films. Also XRD analysis was utilized to compute grain size, strain and dislocation density. Surface morphology was characterized using scanning electron microscope and photomicroscope images. The optical absorption measurement revealed that the direct allowed electronic transition with band gaps 2.8 eV and 3.0 eV for CBD and CSP methods, respectively. The optical constants, such as extinction coefficient ( k), refractive index ( n), real and imaginary dielectric constants ( ɛ 1, ɛ 2) were discussed. The photoluminescence (PL) spectra of CuAlS2 thin films appeared as a single peak for each of them, and this is attributed to band-to-band transition.

  10. Quality Imaging — Comparison of CR Mammography with Screen-Film Mammography

    NASA Astrophysics Data System (ADS)

    Gaona, E.; Azorín Nieto, J.; Irán Díaz Góngora, J. A.; Arreola, M.; Casian Castellanos, G.; Perdigón Castañeda, G. M.; Franco Enríquez, J. G.

    2006-09-01

    The aim of this work is a quality imaging comparison of CR mammography images printed to film by a laser printer with screen-film mammography. A Giotto and Elscintec dedicated mammography units with fully automatic exposure and a nominal large focal spot size of 0.3 mm were used for the image acquisition of phantoms in screen-film mammography. Four CR mammography units from two different manufacturers and three dedicated x-ray mammography units with fully automatic exposure and a nominal large focal spot size of 0.3 mm were used for the image acquisition of phantoms in CR mammography. The tests quality image included an assessment of system resolution, scoring phantom images, Artifacts, mean optical density and density difference (contrast). In this study, screen-film mammography with a quality control program offers a significantly greater level of quality image relative to CR mammography images printed on film.

  11. Comparison of X-ray film and photographic paper in recording CT images.

    PubMed

    Stephenson, T F; Lincoln, A J; Mehnert, P J; Paul, G J

    1984-12-01

    Because of a potential film cost savings of approximately 35% using photographic print paper instead of X-ray film in recording CT images, a comparison was undertaken of these hard copy recording methods. One hundred consecutive CT examinations were reviewed on the scanner display console and recorded on X-ray film and photographic print paper using a multi-imager camera. Hard copy images were compared for diagnostic adequacy. X-ray film adequately recorded the pathology in all cases. Photographic paper adequately recorded the pathology in 97% of cases. In 26% of cases X-ray film was felt to better display the CT diagnosis whereas in 2% of cases photographic paper better displayed the CT diagnosis. Test phantom scans recorded on both media showed no observable difference in spatial or contrast resolution.

  12. Magnetic properties and high-frequency characteristics of FeCoAlO gradient composition thin films

    NASA Astrophysics Data System (ADS)

    Zheng, Fu; Luo, Feilong; Lou, Yuanfu; Wang, Ying; Bai, Jianmin; Wei, Dan; Liu, Xiaoxi; Wei, Fulin

    2012-04-01

    5 × 25 mm FeCoAlO gradient composition thin film was prepared with composite target by using RF magnetron sputtering. The Al-O composition gradient along the length direction of the film was introduced by Al2O3 chips asymmetrically arrayed on a Fe70Co30 target disk. The film was divided into five equal segments. All samples showed a low coercive force Hc of 4 - 8 Oe. The saturation magnetization 4πMs increased continuously from 17.3 kGs for sample 1 (has more Al-O content) to 19.7 kGs for sample 5 and it was consistent with the increasing of Fe-Co composition. Meanwhile, these samples showed different anisotropy behaviors relating with Al-O composition. The sample 1 exhibited the same magnetization curve along the directions of G‖ and G⊥ (G‖ and G⊥ are parallel and perpendicular to the direction of the Al-O composition gradient, respectively). In both of G‖ & G⊥ directions, the sample 1 showed a resonance frequency (fr) of around 2.6 - 3.0 GHz, while, in G‖ direction, it showed a high value of real permeability μ'. The sample 5 exhibited a distinct in-plane uniaxial anisotropy and a good high-frequency response of 3.0 GHz resonance frequency. So these films having gradient composition exhibit are suggested for the use in integrated magnetic devices working in the GHz frequency range.

  13. Quality-enhanced AlN epitaxial films grown on c-sapphire using ZnO buffer layer for SAW applications

    NASA Astrophysics Data System (ADS)

    Fu, Sulei; Li, Qi; Gao, Shuang; Wang, Guangyue; Zeng, Fei; Pan, Feng

    2017-04-01

    AlN epitaxial films with a thin ZnO buffer layer were successfully deposited on c-sapphire by DC magnetron sputtering for surface acoustic wave (SAW) applications. The effect of ZnO buffer layer thickness on structural properties of AlN epitaxial films and the related SAW properties were investigated systematically. The results revealed that a thin ZnO buffer layer can significantly enhance the crystalline quality of AlN films and release the strain in AlN films. The AlN films were epitaxially grown on ZnO buffered-substrate with orientation relationship of (0001) [ 10 1 bar 0 ] AlN//(0001) [ 10 1 bar 0 ] ZnO//(0001) [2 bar 110 ] Al2O3. High frequency SAW devices with a center frequency of 1.4 GHz, a phase velocity of 5600 m/s were achieved on the obtained AlN films. The optimum ZnO buffer layer thickness was found to be 10 nm, resulting in high-quality epitaxial AlN films with a FWHM value of the rocking curve of 0.84°, nearly zero stress and low insertion loss of SAW devices. This work offers an effective approach to achieve high-quality AlN epitaxial films on sapphire substrates for the applications of AlN-based SAW devices.

  14. Influence of high-temperature AlN intermediate layer on the optical properties of MOCVD grown AlGaN films

    NASA Astrophysics Data System (ADS)

    Xie, Deng; Qiu, Zhi Ren; Liu, Yao; Talwar, Devki N.; Wan, Lingyu; Zhang, Xiong; Mei, Ting; Ferguson, Ian T.; Feng, Zhe Chuan

    2017-02-01

    By combining spectroscopic ellipsometry (SE) and optical transmission (OT) characterization methods we have systematically investigated the influence of AlN intermediate layer and AlN transition layer on the optical properties of AlGaN epilayers grown on sapphire by metalorganic chemical vapor deposition (MOCVD) method. Most dielectric functions of III-nitrides obtained by different research groups show significant band-tail absorption—which is not anticipated for such a direct band gap material. The dielectric functions are studied for a series of AlGaN/AlN/Al2O3 structures, with a four-layer model taking into account both high temperature grown AlN layer and low temperature grown AlN layer. The results obtained by fitting the optical parameters to experimental data show that the band-tail absorption should originate from the transition layer. AlGaN film without high temperature AlN epilayer exhibited a redshift of band gap around 0.24 eV.

  15. Sol-gel synthesis and characterization of undoped and Al-doped ZnO thin films for memristive application

    NASA Astrophysics Data System (ADS)

    Ayana, Dawit G.; Prusakova, Valentina; Collini, Cristian; Nardi, Marco V.; Tatti, Roberta; Bortolotti, Mauro; Lorenzelli, Leandro; Chiappini, Andrea; Chiasera, Alessandro; Ferrari, Maurizio; Lunelli, Lorenzo; Dirè, Sandra

    2016-11-01

    The Sol-gel route is a versatile method to fabricate multi-layer, dense and homogeneous ZnO thin films with a controlled thickness and defects for a memristive application. In this work, sol-gel derived multi-layer undoped and Al-doped ZnO thin films were prepared by a spin-coating technique on SiO2/Ti/Pt and silica glass substrates. The effect of both Al doping and curing conditions on the structural and morphological features of ZnO films was investigated by complementary techniques, including electron microscopy, atomic force microscopy, X-ray photoelectron spectroscopy, micro-Raman spectroscopy, and X-ray diffraction analysis. Electrical measurements were performed on SiO2/Ti/Pt/ZnO/Pt(dishes) and SiO2/Ti/Pt/ZnO(Al)/Pt(dishes) fabricated memristive cells and preliminary current-voltage curves were acquired.

  16. Dislocation densities reduction in MBE-grown AlN thin films by high-temperature annealing

    NASA Astrophysics Data System (ADS)

    Nemoz, Maud; Dagher, Roy; Matta, Samuel; Michon, Adrien; Vennéguès, Philippe; Brault, Julien

    2017-03-01

    AlN thin films, grown on (0001) sapphire substrates by molecular beam epitaxy (MBE), were annealed at high temperature (up to 1650 °C) in flowing N2. X-ray diffraction (XRD) studies, combined with Williamson-Hall and Srikant plots, have shown that annealing leads to a strong reduction of both edge and mixed threading dislocation densities, as confirmed by transmission electron microscopy (TEM) images, up to 75%. Moreover, it is found that annealing at high temperatures allows the relaxation of the tensile strain in the AlN film due to the growth process. In addition, the morphological properties of the films were determined by atomic force microscopy (AFM) and show that the annealing conditions have a strong impact on the surface morphology and roughness. Finally, an annealing at 1550 °C for 20 min appears as an ideal tradeoff to enhance the structural properties while preserving the initial AlN surface morphology.

  17. Effect of conditions of pulsed electron-beam melting for Al (film)/Ti (substrate) systems on phase formation and properties of Ti-Al surface alloys

    NASA Astrophysics Data System (ADS)

    Rotshtein, V. P.; Kolubaeva, Yu. A.; Mei, X.; Markov, A. B.; Naiden, E. P.; Oskomov, K. V.; Pryadko, E. L.; Teresov, A. D.; Shulepov, I. A.; Shulov, V. A.

    2012-09-01

    Findings of comparative investigations are presented for phase formation, characteristics of hardening, tribological properties, and oxidation resistance of Ti-Al intermetallic surface alloys formed by multiple alternation of deposition of an Al film (0.1-1 μm) on a Ti substrate and pulsed liquid-phase mixing of Al and Ti by intense low-energy (˜15 keV) electron beams with microsecond (˜3 μs) and submillisecond (100 μs) duration. It is found that microsecond synthesis is effective for formation of γ(TiAl) oxidation-resistant surface alloys. In turn, submillisecond synthesis allows one to form Ti3Al surface alloys with enhanced wear resistance.

  18. Space-charge-controlled field emission model of current conduction through Al2O3 films

    NASA Astrophysics Data System (ADS)

    Hiraiwa, Atsushi; Matsumura, Daisuke; Kawarada, Hiroshi

    2016-02-01

    This study proposes a model for current conduction in metal-insulator-semiconductor (MIS) capacitors, assuming the presence of two sheets of charge in the insulator, and derives analytical formulae of field emission (FE) currents under both negative and positive bias. Since it is affected by the space charge in the insulator, this particular FE differs from the conventional FE and is accordingly named the space-charge-controlled (SCC) FE. The gate insulator of this study was a stack of atomic-layer-deposition Al2O3 and underlying chemical SiO2 formed on Si substrates. The current-voltage (I-V) characteristics simulated using the SCC-FE formulae quantitatively reproduced the experimental results obtained by measuring Au- and Al-gated Al2O3/SiO2 MIS capacitors under both biases. The two sheets of charge in the Al2O3 films were estimated to be positive and located at a depth of greater than 4 nm from the Al2O3/SiO2 interface and less than 2 nm from the gate. The density of the former is approximately 1 × 1013 cm-2 in units of electronic charge, regardless of the type of capacitor. The latter forms a sheet of dipoles together with image charges in the gate and hence causes potential jumps of 0.4 V and 1.1 V in the Au- and Al-gated capacitors, respectively. Within a margin of error, this sheet of dipoles is ideally located at the gate/Al2O3 interface and effectively reduces the work function of the gate by the magnitude of the potential jumps mentioned above. These facts indicate that the currents in the Al2O3/SiO2 MIS capacitors are enhanced as compared to those in ideal capacitors and that the currents in the Al-gated capacitors under negative bias (electron emission from the gate) are more markedly enhanced than those in the Au-gated capacitors. The larger number of gate-side dipoles in the Al-gated capacitors is possibly caused by the reaction between the Al and Al2O3, and therefore gate materials that do not react with underlying gate insulators should be chosen

  19. Deposition of LaMO3 (M=Ni,Co,Cr,Al)-Oriented Films by Spray Combustion Flame Technique

    NASA Astrophysics Data System (ADS)

    Ichinose, Hiromichi; Shiwa, Yuzo; Nagano, Masamitsu

    1994-10-01

    LaMO3 (M=Ni,Co,Cr,Al) films were prepared on sintered alumina, sapphire (001) and MgO(100) at 500 900°C by spraying ultrasonically atomized aqueous solutions of nitrates into a combustion flame (spray combustion flame technique). LaNiO3 and LaCoO3 on MgO(100) crystallized in high-temperature phases (cubic) while LaCrO3 and LaAlO3 crystallized in room-temperature phases. LaMO3 (M=Ni,Co,Cr,Al) films on MgO(100) were highly oriented to (100), (100), (001) and (100), respectively, while the films on sintered alumina and sapphire were not. The electric resistivities of the dense LaMO3 (M=Ni,Co,Cr) films were as low as those of bulk ceramics. LaNiO3 film deposited on MgO above 700°C showed the lowest resistivity of about 6×10-6 Ω m. It was suggested that the reactivities of the constituent metal atoms with OH in the flame are associated with the preferred phase and the morphology of the films.

  20. In-situ TEM crystallization of anorthite-glass films on {alpha}-Al{sub 2}O{sub 3}

    SciTech Connect

    Mallamaci, M.P.; Carter, C.B.; Bentley, J.

    1993-12-31

    Anorthite-glass films have been grown by pulsed-laser deposition on single-crystal {alpha}-Al{sub 2}O{sub 3} substrates which were pre-thinned to electron transparency. The glass films were crystallized in the transmission electron microscope (TEM), which allowed direct observation and video-recording of the crystallization process. Crystallization of these films in the TEM resulted in the formation of hexagonal and orthorhombic anorthite. The orthorhombic phase was the predominant product of glass films grown at elevated substrate temperatures and displayed strong epitaxy with the underlying substrate. In contrast, the hexagonal phase was the major constituent of films grown at ambient substrate temperature and displayed no clear epitaxy with the substrate. The difference in degree of epitaxy and phase structure may be evidence of ordering at the original glass/oxide interface.

  1. Structural and optical properties of thick freestanding AlN films prepared by hydride vapor phase epitaxy

    NASA Astrophysics Data System (ADS)

    Freitas, J. A.; Culbertson, J. C.; Mastro, M. A.; Kumagai, Y.; Koukitu, A.

    2012-07-01

    The morphology, structural and optical properties of void-assisted freestanding HVPE-AlN films were investigated by a combination of non-destructive microscopic and spectroscopic techniques. The freestanding approximately 80 μm thick clear film has a wurtzite crystalline structure with remarkable properties around the central film region. The E2(high)-phonon frequency coincides with reported stress-free film phonon frequency. The low temperature luminescence study of the growth and interface sides of the film is consistent with the incorporation of a high concentration of oxygen impurities. These results are promising as the growth method amenable to the production of freestanding stress-free large area substrates for epitaxial growth.

  2. Thermal and electrical conductivity of approximately 100-nm permalloy, Ni, Co, Al, and Cu films and examination of the Wiedemann-Franz Law

    NASA Astrophysics Data System (ADS)

    Avery, A. D.; Mason, S. J.; Bassett, D.; Wesenberg, D.; Zink, B. L.

    2015-12-01

    We present measurements of thermal and electrical conductivity of polycrystalline permalloy (Ni-Fe), aluminum, copper, cobalt, and nickel thin films with thickness <200 nm. A micromachined silicon-nitride membrane thermal-isolation platform allows measurements of both transport properties on a single film and an accurate probe of the Wiedemann-Franz (WF) law expected to relate the two. Through careful elimination of possible effects of surface scattering of phonons in the supporting membrane, we find excellent agreement with WF in a thin Ni-Fe film over nearly the entire temperature range from 77 to 325 K. All other materials studied here deviate somewhat from the WF prediction of electronic thermal conductivity with a Lorenz number, L , suppressed from the free-electron value by 10 %to20 % . For Al and Cu we compare the results to predictions of the theoretical expression for the Lorenz number as a function of T . This comparison indicates two different types of deviation from expected behavior. In the Cu film, a higher than expected L at lower T indicates an additional thermal conduction mechanism, while at higher T lower than expected values suggests an additional inelastic scattering mechanism for electrons. We suggest the additional low-T L indicates a phonon contribution to thermal conductivity and consider increased electron-phonon scattering at grain boundaries or surfaces to explain the high-T reduction in L .

  3. Characterization and friction behavior of LST/PEO duplex-treated Ti6Al4V alloy with burnished MoS2 film

    NASA Astrophysics Data System (ADS)

    Qin, Yongkun; Xiong, Dangsheng; Li, Jianliang

    2015-08-01

    Laser surface-textured Ti6Al4V substrate was treated by plasma electrolytic oxidation process to prepare an oxide ceramic coating and then burnished with a thin MoS2 film. The area densities of textured dimples and the surface roughness of oxide ceramic underlay which affected the longevity of MoS2 films were thoroughly investigated. The results showed that a mixed surface pattern combining large textured dimples (diameter 150 μm) with small discharged dimples (diameter 5-17 μm) was fabricated by the LST/PEO duplex treatment and it contributed to prolonging the lubricating life of MoS2 film in comparison to the LST or PEO treatment. Wherein, the mixed dimples acted as lubricant reservoirs and the hard oxide coatings provided high load supports for the lubricating films. A much longer life of low friction was provided by the LST/PEO/MoS2 coatings with higher density of textured dimples (S = 55%) and lower roughness of LST/PEO surface (Ra = 1.0 μm).

  4. Interface induced uniaxial magnetic anisotropy in amorphous CoFeB films on AlGaAs(001).

    PubMed

    Hindmarch, A T; Kinane, C J; MacKenzie, M; Chapman, J N; Henini, M; Taylor, D; Arena, D A; Dvorak, J; Hickey, B J; Marrows, C H

    2008-03-21

    We demonstrate an isolated magnetic interface anisotropy in amorphous CoFeB films on (Al)GaAs(001), similar to that in epitaxial films but without a magnetocrystalline anisotropy term. The direction of the easy axis corresponds to that due to the interfacial interaction proposed for epitaxial films. We show that the anisotropy is determined by the relative orbital component of the atomic magnetic moments. Charge transfer is ruled out as the origin of the interface anisotropy, and it is postulated that the spin-orbit interaction in the semiconductor is crucial in determining the magnetic anisotropy.

  5. Influence of disorder on magnetic properties and intrinsic anomalous hall effect in epitaxial Co2FeAl film

    NASA Astrophysics Data System (ADS)

    Meng, K. K.; Miao, J.; Xu, X. G.; Wu, Y.; Zhao, J. H.; Jiang, Y.

    2017-03-01

    We have investigated the influence of disorder on magnetic properties and intrinsic anomalous Hall effects in epitaxial single crystalline full Heusler alloy Co2FeAl. The magnetic properties in both ordered and disordered films are proved by X ray absorption spectroscopy and X ray magnetic circular dichroism measurements. Using a proper scaling, we have extracted the intrinsic anomalous Hall conductivity (AHC) of the films. The intrinsic AHC in the as deposited films is thickness dependent, but in the annealed ones the value is nearly constant, which is ascribed to modified the Fermi surface due to disordering.

  6. Studies on Al:ZnO thin films for TCO applications in flexible amorphous silicon solar cells

    NASA Astrophysics Data System (ADS)

    Rayerfrancis, Arokiyadoss; Bhargav, P. Balaji; Ahmed, Nafis; C, Balaji

    2015-06-01

    Al doped ZnO thin films are deposited by DC magnetron sputtering on corning glass substrates at different process parameters. The effects of Ar flow rate and power density on the structural, optical and electrical properties are investigated by using XRD, UV-Vis spectroscopy, Four-point probe method and surface roughness of the deposited films were examined by AFM analysis. All the films deposited at different process conditions have a strong c-axis preferred orientation and the transmittance of ˜85% in the visible range. Thickness and Refractive Index (η) values are measured using ellipsometry.

  7. AlGaAs film growth using thermionic vacuum arc (TVA) and determination of its physical properties

    NASA Astrophysics Data System (ADS)

    Özen, Soner; Şenay, Volkan; Pat, Suat; Korkmaz, Şadan

    2015-06-01

    In this research, an AlGaAs film was deposited on a microscope slide by means of the thermionic vacuum arc (TVA) technique which is a novel plasma production technique. AlGaAs structures were grown by this deposition technique for the first time and this process occurred in a very short period of time. In order to characterize the produced film, nano-structural, nano-mechanical, optical, and surface properties were determined by field emission scanning electron microscope (FESEM), atomic force microscope (AFM), X-ray diffractometer (XRD) and interferometer. According to the results of the measurements, the mean thickness value of the produced film was obtained as 1.8 μm. The band gap value was determined as 2eV from the Kubelka-Munk plot. The refractive index value was obtained as approximately 3.4. Hardness value was determined as 2 GPa from the Oliver-Pharr method. All these values are consistent with the reported values in the literature for the AlGaAs films produced by different methods. TVA technique appeared as a suitable and promising technique for the production of AlGaAs films.

  8. Magnetic and electron-transport properties of spin-gapless semiconducting CoFeCrAl films

    NASA Astrophysics Data System (ADS)

    Sellmyer, David; Jin, Yunlong; Kharel, Parashu; Valloppilly, Shah; George, Tom; Balasubramanian, Balamurugan; Skomski, Ralph

    Recently, spin-gapless semiconductors (SGS) with a semiconducting or insulating gap in one spin channel and zero gap in the other at the Fermi level have attracted much attention due to their new functionalities such as voltage-tunable spin polarization, the ability to switch between spin-polarized n-type and p-type conduction, high spin polarization and carrier mobility. For the development of spintronic devices utilizing SGS, it is necessary to have a better understanding of the magnetic and transport properties of the thin films of these materials. In this study, the structural, magnetic, and electron-transport properties of a SGS material CoFeCrAl in the thin film geometry have been investigated. CoFeCrAl films were grown on atomically flat SiO2 substrates using magnetron sputtering. The Curie temperature was measured to be 550 K very close to the value reported for bulk CoFeCrAl. Electron-transport measurements on the oriented films revealed a negative temperature coefficient of resistivity, small anomalous Hall conductivity and linear field dependence of magnetoresistance, which are transport signatures of SGS. The effect of elemental compositions and structural ordering on the SGS properties of the CoFeCrAl films will be discussed. Research supported by NSF (Y. J.), DoE (B. B., D. J. S), ARO (T. A. G., S. R. V.), SDSU (P. K.), and NRI (Facilities).

  9. Laser damage properties of TiO2/Al2O3 thin films grown by atomic layer deposition

    NASA Astrophysics Data System (ADS)

    Wei, Yaowei; Liu, Hao; Sheng, Ouyang; Liu, Zhichao; Chen, Songlin; Yang, Liming

    2011-08-01

    Research on thin film deposited by atomic layer deposition (ALD) for laser damage resistance is rare. In this paper, it has been used to deposit TiO2/Al2O3 films at 110° C and 280° C on fused silica and BK7 substrates. Microstructure of the thin films was investigated by x-ray diffraction. The laser-induced damage threshold (LIDT) of samples was measured by a damage test system. Damage morphology was studied under a Nomarski differential interference contrast microscope and further checked under an atomic force microscope. Multilayers deposited at different temperatures were compared. The results show that the films deposited by ALD had better uniformity and transmission; in this paper, the uniformity is better than 99% over 100mm Φ samples, and the transmission is more than 99.8% at 1064nm. Deposition temperature affects the deposition rate and the thin film microstructure and further influences the LIDT of the thin films. As to the TiO2/Al2O3 films, the LIDTs were 6.73±0.47J/cm2 and 6.5±0.46J/cm2 at 110° C on fused silica and BK7 substrates, respectively. The LIDTs at 110° C are notably better than 280° C.

  10. Comparison of thermal and chemical treatments of ultrathin chitosan films

    NASA Astrophysics Data System (ADS)

    Murray, Chris; Dutcher, John

    2006-03-01

    Chitosan is a biodegradable polysaccharide derived from seashell waste products. The high water absorbency and biocompatibility of chitosan have enabled its use as a hydrogel in specialty biomedical applications. Chitosan can be dissolved in weakly acidic solutions enabling its use in applications such as films and gels, which can be converted into chitin by a chemical process known as acetylation. We present the results of several experiments in which changes in the thickness, index of refraction and molecular environment in response to changes in relative humidity for ultrathin films of chitosan are examined as a function of exposure to temperatures above 150 degrees Celsius. Measurements made by ellipsometry and FTIR spectroscopy indicate that changes in the thickness and index of refraction of the films are accompanied by a change in the infrared absorption spectra similar to that associated with acetylation, which is typically accomplished by exposure of chitosan to acetic anhydride. We believe that these changes are responsible for reduced equilibrium water content in the films at all relative humidity values studied, and may offer a simple method for converting chitosan into a chitin-like material.

  11. Facet tropism: comparison of plain film and computed tomography examinations.

    PubMed

    Cox, J M; Aspegren, D D; Trier, K K

    1991-01-01

    This study compares the findings of plain film X-ray and computed CT examination in the diagnosis of facet orientation and the presence of tropism. Twenty consecutive patients having lumbar disc disease with sciatica were studied utilizing plain X-ray as well as CT scanning. A chiropractic radiologist read the films to determine if facet facings were sagittally, semi-sagittally or coronally oriented on both CT and plain X-ray study. CT was accepted as the most accurate method to determine the true facet orientation, and plain X-ray interpretation of facet orientation was compared to the CT reading. There was a statistically significant relationship in diagnosing tropism between plain film X-ray and CT readings, with a predictive accuracy that ranged from 58-84% across the three segmental levels. However, the exact concordance of plain film X-ray and CT readings for right and left facet facings was very low. This raises the question of how the profession defines diagnostic accuracy.

  12. Crystallization of silicon films on glass: a comparison of methods

    SciTech Connect

    Lemons, R.A.; Bosch, M.A.; Herbst, D.

    1983-01-01

    The lure of flat panel displays has stimulated much research on the crystallization of silicon films deposited on large-area transparent substrates. In most respects, fused quartz is ideal. It has high purity, thermal shock resistance, and a softening point above the silicon melting temperature. Unfortunately, fused quartz has such a small thermal expansion that the silicon film cracks as it cools. This problem has been attacked by patterning with islands or moats before and after crystallization, by capping, and by using silicate glass substrates that match the thermal expansion of silicon. The relative merits of these methods are compared. Melting of the silicon film to achieve high mobility has been accomplished by a variety of methods including lasers, electron beams, and strip heaters. For low melting temperature glasses, surface heating with a laser or electron beam is essential. Larger grains are obtained with the high bias temperature, strip heater techniques. The low-angle grain boundaries characteristic of these films may be caused by constitutional undercooling. A model is developed to predict the boundary spacing as a function of scan rate and temperature gradient.

  13. Integration of crystalline orientated γ-Al2O3 films and complementary metal-oxide-semiconductor circuits on Si(1 0 0) substrate

    NASA Astrophysics Data System (ADS)

    Oishi, Koji; Akai, Daisuke; Ishida, Makoto

    2015-01-01

    In this paper, integration of crystalline orientated γ-Al2O3 films and complementary metal-oxide-semiconductor (CMOS) circuits on Si(1 0 0) substrate was reported. In this integration processes, crystalline γ-Al2O3 films need to be preserved their crystallinity during high temperature annealing processes of CMOS fabrication in order to prevent surface condition changes. The γ-Al2O3 films grown on Si substrates are annealed in the CMOS fabrication process conditions, drive-in annealing at 1150 °C in O2 atmosphere and wet annealing 1000 °C in H2O vapor atmosphere. Reflection high energy electron diffraction (RHEED) and x-ray diffraction (XRD) were used to characterize the crystallinity of γ-Al2O3 films after the annealing processes. Surface conditions of the films are analyzed and observed with X-ray photoelectron spectroscopy (XPS) and scanning electron microscope (SEM). As a result, RHEED patterns of the γ-Al2O3 films indicated that wet oxidation annealing was a critical process severally inferior surface condition of crystalline γ-Al2O3 films. XRD, XPS, and SEM investigation unveiled further details of the crystallinity changes on γ-Al2O3 films for each process. These results indicated passivation films were required to integrate γ-Al2O3 films with CMOS fabrication process. Therefore we proposed and introduced Si3N4/TEOS passivation films on γ-Al2O3 films in CMOS fabrication processes. At last, MOSFETs on γ-Al2O3 integrated Si(1 0 0) substrate were fabricated and characterized. The designed characteristics of MOSFETs were obtained on γ-Al2O3 integrated Si substrate.

  14. Chemical-mechanical planarization of Al and Cu thin films for the damascene process

    NASA Astrophysics Data System (ADS)

    Wrschka, Peter Thomas

    In this thesis, the chemical-mechanical planarization (CMP) of Al and Cu thin films is investigated. Our results are obtained by polishing blanket and patterned wafers covered with either Al or Cu utilizing various pads and slurries. Removal rates and metal to SiO2 selectivity values at different pressures and velocities are measured. Furthermore, the results of the successful planarization of Al and Cu damascene structures are reported here. We analyze the surface oxidation of Al before and immediately after the polishing of blanket wafers by X-ray photoelectron spectroscopy. The results show that the CMP of Al proceeds by the growth and removal of the metal passivation layer, i.e. Al2O3. A model for the Al removal mechanism is proposed, which states that the in-situ passivation layer thickness is inversely proportional to the removal rate. The CMP of Cu damascene structures found that the Cu line recess, metal line corrosion and the adherence of slurry particles is determined by the slurry formulation. Cu line dishing, comer rounding of the SiO2 spacer and the pattern density dependence of the removal rate is controlled by the type of pad utilized. We found that moderate etch rates (~10 nm/min) yield high removal rates (~1 μm/min) and low Cu line recess (<10% of Cu line thickness). The occurrence of corrosion is favored at small feature sizes in low pattern density areas. However, this can be avoided by employing passivating agents. The dishing of metal lines and the comer rounding of dielectric spacers is prevented by employing a sufficiently hard pad. The diffusion barrier layer removal (Ta), which shows no chemical etching in the slurry, is affected by the pad and the slurry particle type. A hard pad and especially the use of silica particles enhances the liner removal significantly. Silica particles also adhere less to the metal lines and settle at a substantially slower rate in the slurry than alumina particles.

  15. Characterization of Al-As codoped p-type ZnO films by magnetron cosputtering deposition

    SciTech Connect

    Yun, Eui-Jung; Park, Hyeong-Sik; Lee, Kyu H.; Nam, Hyoung G.; Jung, Myunghee

    2008-04-01

    We report the preparation of Al-As codoped p-type ZnO films by rf magnetron cosputtering deposition. The p-type conductivity of the films was revealed by Hall measurements, x-ray photoelectron spectroscopy (XPS), and photoluminescence measurements after being annealed in O{sub 2}. It was observed by XPS that Al content increased with increasing AlAs target power from 80 to 160 W and reached a maximum value at an AlAs target power of 160 W. Hole concentration decreased with increasing Al content. With increasing AlAs target power greater than 160 W, the samples exhibit increases in As and O contents and decreases in Al and Zn contents, which contribute to the increase in hole concentration. A high hole concentration of 2.354x10{sup 20} cm{sup -3}, a low resistivity of 2.122x10{sup -2} {omega} cm, and a Hall mobility of 0.13 cm{sup 2}/V s for the films with high As content of 16.59% were obtained. XPS has also been used to address the unresolved issues related to the p-type formation mechanism of As-doped ZnO, supporting that the acceptor is As{sub Zn}-2V{sub Zn}.

  16. Fabrication and Characteristics of High Capacitance Al Thin Films Capacitor Using a Polymer Inhibitor Bath in Electroless Plating Process.

    PubMed

    Cho, Young-Lae; Lee, Jung-Woo; Lee, Chang-Hyoung; Choi, Hyung-Seon; Kim, Sung-Su; Song, Young Il; Park, Chan; Suh, Su-Jeong

    2015-10-01

    An aluminum (Al) thin film capacitor was fabricated for a high capacitance capacitor using electrochemical etching, barrier-type anodizing, and electroless Ni-P plating. In this study, we focused on the bottom-up filling of Ni-P electrodes on Al2O3/Al with etched tunnels. The Al tunnel pits were irregularly distributed on the Al foil, diameters were in the range of about 0.5~1 μm, the depth of the tunnel pits was approximately 35~40 μm, and the complex structure was made full filled hard metal. To control the plating rate, the experiment was performed by adding polyethyleneimine (PEI, C2H5N), a high molecular substance. PEI forms a cross-link at the etching tunnel inlet, playing the role of delaying the inlet plating. When the PEI solution bath was used after activation, the Ni-P layer was deposited selectively on the bottoms of the tunnels. The characteristics were analyzed by adding the PEI addition quantity rate of 100~600 mg/L into the DI water. The capacitance of the Ni-P/Al2O3 (650~700 nm)/Al film was measured at 1 kHz using an impedance/gain phase analyzer. For the plane film without etch tunnels the capacitance was 12.5 nF/cm2 and for the etch film with Ni-P bottom-up filling the capacitance was 92 nF/cm2. These results illustrate a remarkable maximization of capacitance for thin film metal capacitors.

  17. Luminescent properties of Mn-doped Y3Al5O12 single crystalline films

    NASA Astrophysics Data System (ADS)

    Zorenko, Yu.; Gorbenko, V.; Zorenko, T.; Kuklinski, B.; Grinberg, M.; Wiśniewski, K.; Bilski, P.

    2014-08-01

    The absorption, cathodoluminescence and photoluminescence (PL) spectra as well as PL decay kinetics of Mn doped Y3Al5O12 (YAG:Mn) single crystalline films (SCF) with manganese concentration in the 0.002-0.2 at.% range, grown by the LPE method from PbO to B2O3 based flux onto YAG substrates, were analyzed in this work. The special goal was spectroscopic determination of valence states of manganese ions which are realized in these SCF depending on Mn content. In SCF with Mn content (0.002-0.02 at.%), the incorporation of Mn4+ and Mn2+ ions was found. The absorption and emission spectra of YAG:Mn SCF at higher (0.02-0.2 at.%) content confirmed that the main valence state of manganese ions is Mn3+ state.

  18. Dislocation structure in AlN films induced by in situ transmission electron microscope nanoindentation

    NASA Astrophysics Data System (ADS)

    Tokumoto, Yuki; Kutsukake, Kentaro; Ohno, Yutaka; Yonenaga, Ichiro

    2012-11-01

    To elucidate dislocation generation and propagation processes in AlN films containing a high density of grown-in threading dislocations (TDs), in situ nanoindentation (NI) was performed in a transmission electron microscope at room temperature. Dislocations with the Burgers vector b = 1/3<12¯10> were introduced not only on the primary slip plane, i.e., the (0001) basal planes, but also on the {101¯1} and {101¯2} pyramidal planes. The results are explained by considering the distribution of the resolved shear stress. It was found that the dislocations induced by NI interact with grown-in TDs: (1) for the NI-induced dislocations on pyramidal planes, edge grown-in TDs induce cross slip to basal planes, and (2) for the NI-induced dislocations on basal planes, screw grown-in TDs prevent their propagation, while edge grown-in TDs do not.

  19. Optical parameters of Al-doped ZnO nanorod array thin films grown via the hydrothermal method.

    PubMed

    Kim, Soaram; Kim, Min Su; Nam, Giwoong; Park, Hyunggil; Yoon, Hyunsik; Leem, Jae-Young

    2013-09-01

    ZnO seed layers were deposited onto a quartz substrate using the sol--gel method, and Al-doped ZnO (AZO) nanorod array thin films with different Al concentrations that ranged from 0 to 2.0 at. % were grown on the ZnO seed layers via the hydrothermal method. Optical parameters, including the optical band gap, the absorption coefficient, the Urbach energy, the refractive index, the dispersion parameter, and the optical conductivity, were studied to investigate the effects of Al doping on the optical properties of AZO nanorod array thin films. The optical band gaps of the ZnO and AZO nanorod array thin films were 3.206 at 0 at.%, 3.214 at 0.5 at.%, 3.226 at 1.5 at.%, and 3.268 at 2.0 at.%. The Urbach energy gradually decreased from 126 meV (0 at.%) to 70 meV (2.0 at.%) as the Al concentration was increased. The dispersion energy, the single-oscillator energy, the average oscillator wavelength, the average oscillator strength, the refractive index, and the optical conductivity of the AZO nanorod array thin films were all affected by Al doping.

  20. Atomic layer deposition of TiO2 / Al2O3 films for optical applications

    NASA Astrophysics Data System (ADS)

    Triani, Gerry; Evans, Peter J.; Mitchell, David R. G.; Attard, Darren J.; Finnie, Kim S.; James, Michael; Hanley, Tracey; Latella, Bruno; Prince, Kathryn E.; Bartlett, John

    2005-09-01

    Atomic layer deposition (ALD) is an important technology for depositing functional coatings on accessible, reactive surfaces with precise control of thickness and nanostructure. Unlike conventional chemical vapour deposition, where growth rate is dependent on reactant flux, ALD employs sequential surface chemical reactions to saturate a surface with a (sub-) monolayer of reactive compounds such as metal alkoxides or covalent halides, followed by reaction with a second compound such as water to deposit coatings layer-by-layer. A judicious choice of reactants and processing conditions ensures that the reactions are self-limiting, resulting in controlled film growth with excellent conformality to the substrate. This paper investigates the deposition and characterisation of multi-layer TiO2 /Al2O3 films on a range of substrates, including silicon <100>, soda glass and polycarbonate, using titanium tetrachloride/water and trimethylaluminium/water as precursor couples. Structure-property correlations were established using a suite of analytical tools, including transmission electron microscopy (TEM), secondary ion mass spectrometry (SIMS), X-ray reflectometry (XRR) and spectroscopic ellipsometry (SE). The evolution of nanostructure and composition of multi-layer high/low refractive index stacks are discussed as a function of deposition parameters.

  1. Enhanced spin Hall ratios by Al and Hf impurities in Pt thin films

    NASA Astrophysics Data System (ADS)

    Nguyen, Minh-Hai; Zhao, Mengnan; Ralph, Daniel C.; Buhrman, Robert A.

    The spin Hall effect (SHE) in Pt has been reported to be strong and hence promising for spintronic applications. In the intrinsic SHE mechanism, which has been shown to be dominant in Pt, the spin Hall conductivity σSH is constant, dependent only on the band structure of the spin Hall material. The spin Hall ratio θSH =σSH . ρ , on the other hand, should be proportional to the electrical resistivity ρ of the spin Hall layer. This suggests the possibility of enhancing the spin Hall ratio by introducing additional diffusive scattering to increase the electrical resistivity of the spin Hall layer. Our previous work has shown that this could be done by increasing the surface scattering by growing thinner Pt films in contact with higher resistivity materials such as Ta. In this talk, we discuss another approach: to introduce impurities of metals with negligible spin orbit torque into the Pt film. Our PtAl and PtHf alloy samples exhibit strong enhancement of the spin Hall torque efficiency with impurity concentration due to increased electrical resistivity. Supported in part by Samsung Electronics.

  2. Perpendicular magnetic anisotropy and magnetization dynamics in oxidized CoFeAl films

    NASA Astrophysics Data System (ADS)

    Wu, Di; Zhang, Zhe; Li, Le; Zhang, Zongzhi; Zhao, H. B.; Wang, J.; Ma, B.; Jin, Q. Y.

    2015-07-01

    Half-metallic Co-based full-Heusler alloys with perpendicular magnetic anisotropy (PMA), such as Co2FeAl in contact with MgO, are receiving increased attention recently due to its full spin polarization for high density memory applications. However, the PMA induced by MgO interface can only be realized for very thin magnetic layers (usually below 1.3 nm), which would have strong adverse effects on the material properties of spin polarization, Gilbert damping parameter, and magnetic stability. In order to solve this issue, we fabricated oxidized Co50Fe25Al25 (CFAO) films with proper thicknesses without employing the MgO layer. The samples show controllable PMA by tuning the oxygen pressure (PO2) and CFAO thickness (tCFAO), large perpendicular anisotropy field of ~8.0 kOe can be achieved at PO2 = 12% for the sample of tCFAO = 2.1 nm or at PO2 = 7% for tCFAO = 2.8 nm. The loss of PMA at thick tCFAO or high PO2 results mainly from the formation of large amount of CoFe oxides, which are superparamagnetic at room temperature but become hard magnetic at low temperatures. The magnetic CFAO films, with strong PMA in a relatively wide thickness range and small intrinsic damping parameter below 0.028, would find great applications in developing advanced spintronic devices.

  3. Perpendicular magnetic anisotropy and magnetization dynamics in oxidized CoFeAl films

    PubMed Central

    Wu, Di; Zhang, Zhe; Li, Le; Zhang, Zongzhi; Zhao, H. B.; Wang, J.; Ma, B.; Jin, Q. Y.

    2015-01-01

    Half-metallic Co-based full-Heusler alloys with perpendicular magnetic anisotropy (PMA), such as Co2FeAl in contact with MgO, are receiving increased attention recently due to its full spin polarization for high density memory applications. However, the PMA induced by MgO interface can only be realized for very thin magnetic layers (usually below 1.3 nm), which would have strong adverse effects on the material properties of spin polarization, Gilbert damping parameter, and magnetic stability. In order to solve this issue, we fabricated oxidized Co50Fe25Al25 (CFAO) films with proper thicknesses without employing the MgO layer. The samples show controllable PMA by tuning the oxygen pressure (PO2) and CFAO thickness (tCFAO), large perpendicular anisotropy field of ~8.0 kOe can be achieved at PO2 = 12% for the sample of tCFAO = 2.1 nm or at PO2 = 7% for tCFAO = 2.8 nm. The loss of PMA at thick tCFAO or high PO2 results mainly from the formation of large amount of CoFe oxides, which are superparamagnetic at room temperature but become hard magnetic at low temperatures. The magnetic CFAO films, with strong PMA in a relatively wide thickness range and small intrinsic damping parameter below 0.028, would find great applications in developing advanced spintronic devices. PMID:26190066

  4. Thin film AlSb carrier transport properties and room temperature radiation response

    NASA Astrophysics Data System (ADS)

    Vaughan, Erin Ivey

    Theoretical predictions for AlSb material properties have not been realized using bulk growth methods. This research was motivated by advances in molecular beam epitaxial (MBE) growth technology to produce high-quality thin-film AlSb for the purpose of evaluating transport properties and suitability for radiation detection. Simulations using MCNP5 were performed to benchmark an existing silicon surface barrier detector and to predict ideal AlSb detector behavior, with the finding that AlSb should have improved detection efficiency due to the larger atomic number of Sb compared with Si. GaSb diodes were fabricated by both homoepitaxial MBE and ion implantation methods in order to determine the effect on the radiation detection performance. It was found that the radiation response for the MBE grown GaSb diodes was very uniform, whereas the ion-implanted GaSb diodes exhibited highly variable spectral behavior. Two sets of AlSb heterostructures were fabricated by MBE methods; one for a Hall doping study and the other for a radiation response study. The samples were characterized for material quality using transmission electron microscopy (TEM), Nomarski imaging, atomic force microscopy (AFM), x-ray diffraction (XRD), I-V curve analysis, and Hall effect measurements. The Hall study samples were grown on semi-insulating (SI) GaAs substrates and contained a thin GaAs layer on top to protect the AlSb from oxygen. Doping for the AlSb layer was achieved using GaTe and Be for n- and p-type conductivity, respectively, with intended doping densities ranging from 1015 to 1017 cm -3. Results for net carrier concentration ranged 2x10 9 to 1x1017 cm-3, 60 to 3000 cm 2/Vs for mobility, and 2 to 106 Ω-cm for resistivity, with the undoped AlSb samples presenting the best values. The radiation detector samples were designed to be PIN diodes, with undoped AlSb sandwiched between n-type GaAs substrate and p-type GaSb as a conductive oxygen-protective layer. Energy spectra were measured

  5. Growth and characterisation of NiAl and N-doped NiAl films deposited by closed field unbalanced magnetron sputtering ion plating using elemental ni and Al targets.

    PubMed

    Said, R; Ahmed, W; Abuain, T; Abuazza, A; Gracio, J

    2010-04-01

    Closed Field Unbalanced Magnetron Sputtering Ion Plating (CFUBMSIP) has been used to deposit undoped and nitrogen doped NiAI thin films onto glass and stainless steel 316 substrates. These films have potential applications in tribological, electronic media and thermal barrier coatings. The surface characteristics, composition, mechanical and structural properties have been investigated using stylus profilometry, X-ray diffraction (XRD), Energy dispersive spectroscopy (EDAX), Atomic force microscopy (AFM) and nanoindentation. The average thickness of the films was approximately 1 microm. The X-ray diffraction spectra revealed the presence of the beta NiAl phase. The EDAX results revealed that all of the undoped and nitrogen doped NiAl thin films exhibited the near equiatomic NiAl composition with the best results being achieved using 300 Watts DC power for Ni and 400 Watts DC power for Al targets respectively. AFM results of both types of films deposited on glass samples exhibited a surface roughness of less than 100 nm. The nanoindenter results for coatings on glass substrates displayed hardness and elastic modulus of 7.7 GPa and 100 GPa respectively. The hardest coatings obtained were obtained at 10% of nitrogen.

  6. Deep-UV sensors based on SAW oscillators using low-temperature-grown AlN films on sapphires.

    PubMed

    Laksana, Chipta; Chen, Meei-Ru; Liang, Yen; Tzou, An-Jyeg; Kao, Hui-Ling; Jeng, Erik; Chen, Jyh; Chen, Hou-Guang; Jian, Sheng-Rui

    2011-08-01

    High-quality epitaxial AlN films were deposited on sapphire substrates at low growth temperature using a helicon sputtering system. SAW filters fabricated on the AlN films exhibited excellent characteristics, with center frequency of 354.2 MHz, which corresponds to a phase velocity of 5667 m/s. An oscillator fabricated using AlN-based SAW devices is presented and applied to deep-UV light detection. A frequency downshift of about 43 KHz was observed when the surface of SAW device was illuminated by a UV source with dominant wavelength of around 200 nm. The results indicate the feasibility of developing remote sensors for deep-UV measurement using AlN-based SAW oscillators.

  7. Effects of growth temperature and target material on the growth behavior and electro-optical properties of ZnO:Al films deposited by high-rate steered cathodic arc plasma evaporation

    NASA Astrophysics Data System (ADS)

    Liang, Chih-Hao; Hwang, Weng-Sing; Wang, Wei-Lin

    2015-04-01

    ZnO:Al (AZO) films were deposited using high-rate (215 nm/min) steered cathodic arc plasma evaporation with a ceramic AZO target at various deposition temperatures (Td = 80-400 °C). AZO films were also prepared with a Zn-Al target at various Td values for comparison. The high-melting-point (1975 °C) AZO target significantly reduced the droplet size to ∼150 nm. In contrast, opaque Zn-Al microdroplets (several μm) were incorporated into the film deposited using the Zn-Al target. The incorporation of large microdroplets resulted in a rough surface and a nonuniform distribution of film thickness due to the self-shadowing effect. Using a combination of a ceramic AZO target and a steered arc to deposit AZO films significantly reduces the droplet size and maintains a high growth rate. The ratio of c- and a-axes lattice constants (c/a ratio) decreased with increasing Td. A higher c/a ratio facilitates strain relaxation via the formation of basal-plane stacking faults. The Al3+ doping efficiency was improved by increasing Td; however, the Al segregated to the grain boundary at high Td (>300 °C). The films deposited with an AZO target at 200 °C had the highest figure of merit (2.21 × 10-2 Ω-1), with a corresponding average transmittance of 87.7% and resistivity of 5.48 × 10-4 Ω cm.

  8. Microstructure and property of diamond-like carbon films with Al and Cr co-doping deposited using a hybrid beams system

    NASA Astrophysics Data System (ADS)

    Dai, Wei; Liu, Jingmao; Geng, Dongsen; Guo, Peng; Zheng, Jun; Wang, Qimin

    2016-12-01

    DLC films with weak carbide former Al and carbide former Cr co-doping (Al:Cr-DLC) were deposited by a hybrid beams system comprising an anode-layer linear ion beam source (LIS) and high power impulse magnetron sputtering using a gas mixture of C2H2 and Ar as the precursor. The doped Al and Cr contents were controlled via adjusting the C2H2 fraction in the gas mixture. The composition, microstructure, compressive stress, mechanical properties and tribological behaviors of the Al:Cr-DLC films were researched carefully using X-ray photoelectron spectroscopy, transmission electron microscopy, Raman spectroscopy, stress-tester, nanoindentation and ball-on-plate tribometer as function of the C2H2 fraction. The results show that the Al and Cr contents in the films increased continuously as the C2H2 fraction decreased. The doped Cr atoms preferred to bond with the carbon while the Al atoms mainly existed in metallic state. Structure modulation with alternate multilayer consisted of Al-poor DLC layer and Al-rich DLC layer was found in the films. Those periodic Al-rich DLC layers can effectively release the residual stress of the films. On the other hand, the formation of the carbide component due to Cr incorporation can help to increase the film hardness. Accordingly, the residual stress of the DLC films can be reduced without sacrificing the film hardness though co-doping Al and Cr atoms. Furthermore, it was found that the periodic Al-rich layer can greatly improve the elastic resilience of the DLC films and thus decreases the film friction coefficient and wear rate significantly. However, the existence of the carbide component would cause abrasive wear and thus deteriorate the wear performance of the films.

  9. Controlling the Al-doping profile and accompanying electrical properties of rutile-phased TiO2 thin films.

    PubMed

    Jeon, Woojin; Rha, Sang Ho; Lee, Woongkyu; Yoo, Yeon Woo; An, Cheol Hyun; Jung, Kwang Hwan; Kim, Seong Keun; Hwang, Cheol Seong

    2014-05-28

    The role of Al dopant in rutile-phased TiO2 films in the evaluation of the mechanism of leakage current reduction in Al-doped TiO2 (ATO) was studied in detail. The leakage current of the ATO film was strongly affected by the Al concentration at the interface between the ATO film and the RuO2 electrode. The conduction band offset of the interface increased with the increase in the Al dopant concentration in the rutile TiO2, which reduced the leakage current in the voltage region pertinent to the next-generation dynamic random access memory application. However, the Al doping in the anatase TiO2 did not notably increase the conduction band offset even with a higher Al concentration. The detailed analyses of the leakage conduction mechanism based on the quantum mechanical transfer-matrix method showed that Schottky emission and Fowler-Nordheim tunneling was the dominant leakage conduction mechanism in the lower and higher voltage regions, respectively. The chemical analyses using X-ray photoelectron spectroscopy corroborated the electrical test results.

  10. Growth and characterization of Al2O3 films on fluorine functionalized epitaxial graphene

    NASA Astrophysics Data System (ADS)

    Robinson, Zachary R.; Jernigan, Glenn G.; Wheeler, Virginia D.; Hernández, Sandra C.; Eddy, Charles R.; Mowll, Tyler R.; Ong, Eng Wen; Ventrice, Carl A.; Geisler, Heike; Pletikosic, Ivo; Yang, Hongbo; Valla, Tonica

    2016-08-01

    Intelligent engineering of graphene-based electronic devices on SiC(0001) requires a better understanding of processes used to deposit gate-dielectric materials on graphene. Recently, Al2O3 dielectrics have been shown to form conformal, pinhole-free thin films by functionalizing the top surface of the graphene with fluorine prior to atomic layer deposition (ALD) of the Al2O3 using a trimethylaluminum (TMA) precursor. In this work, the functionalization and ALD-precursor adsorption processes have been studied with angle-resolved photoelectron spectroscopy, low energy electron diffraction, and X-ray photoelectron spectroscopy. It has been found that the functionalization process has a negligible effect on the electronic structure of the graphene, and that it results in a twofold increase in the adsorption of the ALD-precursor. In situ TMA-dosing and XPS studies were also performed on three different Si(100) substrates that were terminated with H, OH, or dangling Si-bonds. This dosing experiment revealed that OH is required for TMA adsorption. Based on those data along with supportive in situ measurements that showed F-functionalization increases the amount of oxygen (in the form of adsorbed H2O) on the surface of the graphene, a model for TMA-adsorption on graphene is proposed that is based on a reaction of a TMA molecule with OH.

  11. Tailoring thermal conductivity of AlN films by periodically aligned surface nano-grooves

    NASA Astrophysics Data System (ADS)

    Zhang, Xiaoliang; Gong, Xiaojing; Zhou, Yanguang; Hu, Ming

    2016-09-01

    Low thermal conductivity in condensed matter is critical to a diverse range of technologies, such as high efficient thermoelectrics and thermal insulation. It is thus important to fabricate, grow, or assemble structures that can reach a low limit. For III-nitride with high intrinsic thermal conductivity, how to utilize periodic nanostructures to manipulate phonons and achieve controllable low thermal conductivity is rarely studied. Recently, periodically self-organized arrays of nano-grooves on AlN (0001) surface have been observed experimentally. Inspired by this, we perform non-equilibrium molecular dynamics simulations to explore the thermal transport in such structures. The dependence of thermal conductivity on the periodic length of the nano-grooves and the angle of the side wall is systematically studied. Remarkably, results show that the thermal conductivity has a minimum value for a critical periodic length, which is one order of magnitude lower than the counterpart bulk value. The intrinsic high thermal conductivity of AlN can be robustly manipulated to the desired value by rationally designing the periodic nano-groove structure on the surface of the film. The detailed mechanism is provided by the frequency dependent heat current spectrum and phonon polarization analysis, along with the semi-empirical theoretical model. The understanding gained from this study offers an alternative route for tailoring the thermal conductivity of nanofilms by periodically patterned nano-grooves, which has large impact in relevant applications involving thermal transport.

  12. Deposition of LaMO 3 (M=Co, Cr, Al) films by spray pyrolysis in inductively coupled plasma

    NASA Astrophysics Data System (ADS)

    Ichinose, Hiromichi; Katsuki, Hiroaki; Nagano, Masamitsu

    1994-11-01

    LaMO 3 (M=Co, Cr, Al) films were prepared on substrates by introducing ultrasonically atomized metal nitrate solutions into an inductively coupled plasma under atmospheric pressure (spray-ICP technique). Dense perovskite-type oxide films of LaCoO 3 and LaCrO 3 were obtained at 600-900°C, while the LaAiO 3 films consisted of loosely packed aggregates. Deposition rates of the films were 6-35 nm/min at 600-900°C. The high temperature phases (cubic) of LaCoO 3 and LaAlO 3 crystallized due to effect of grain size. LaCrO 3 film crystallized in the room temperature phase (orthorhombic). LaCoO 3 was highly oriented to (100) on MgO(100), and LaCrO 3 to (011) and (101) on sapphire(001). Lowest electric resistivities of LaCoO 3 and LaCrO 3 film on MgO were 9.8X10 -3 and 2.7X10 -1 Ω m, respectively, at room temperature.

  13. Effect of particle bombardment on the orientation and the residual stress of sputtered AlN films for SAW devices.

    PubMed

    Iborra, Enrique; Clement, Marta; Sangrador, Jesús; Sanz-Hervás, Alfredo; Vergara, Lucía; Aguilar, Miguel

    2004-03-01

    We present a study of the effect of particle bombardment on the preferred orientation and the residual stress of polycrystalline aluminum nitride (AlN) thin films for surface acoustic wave (SAW) applications. Films were deposited on silicon (100) substrates by radio frequency (RF) sputtering of an aluminum target in an argon and nitrogen gas mixture. The main deposition parameters were changed as follows: the total pressure from 4 mTorr to 11 mTorr, the N2 content in the gas mixture from 20% to 80%, and the substrate self-bias voltage from -10 V to -30 V. If a sufficiently high negative substrate self-bias voltage is induced, (00.2)-oriented films are obtained over the full ranges of pressure and N2 content. Such films have values of residual stress ranging from -3 GPa to +1 GPa, depending on the deposition conditions. Our results suggest that the energy of the Ar ions colliding with the substrate controls the preferred orientation of the films, whereas the directionality of the ions (for the same energy) is the main factor determining the residual stress. To demonstrate the suitability of our material for the intended application, SAW filters with good electroacoustic response have been fabricated using AlN thin films with optimized (00.2) orientation and controlled residual stress.

  14. Image reconstruction algorithm for optically stimulated luminescence 2D dosimetry using laser-scanned Al2O3:C and Al2O3:C,Mg films

    NASA Astrophysics Data System (ADS)

    Ahmed, M. F.; Schnell, E.; Ahmad, S.; Yukihara, E. G.

    2016-10-01

    The objective of this work was to develop an image reconstruction algorithm for 2D dosimetry using Al2O3:C and Al2O3:C,Mg optically stimulated luminescence (OSL) films imaged using a laser scanning system. The algorithm takes into account parameters associated with detector properties and the readout system. Pieces of Al2O3:C films (~8 mm  ×  8 mm  ×  125 µm) were irradiated and used to simulate dose distributions with extreme dose gradients (zero and non-zero dose regions). The OSLD film pieces were scanned using a custom-built laser-scanning OSL reader and the data obtained were used to develop and demonstrate a dose reconstruction algorithm. The algorithm includes corrections for: (a) galvo hysteresis, (b) photomultiplier tube (PMT) linearity, (c) phosphorescence, (d) ‘pixel bleeding’ caused by the 35 ms luminescence lifetime of F-centers in Al2O3, (e) geometrical distortion inherent to Galvo scanning system, and (f) position dependence of the light collection efficiency. The algorithm was also applied to 6.0 cm  ×  6.0 cm  ×  125 μm or 10.0 cm  ×  10.0 cm  ×  125 µm Al2O3:C and Al2O3:C,Mg films exposed to megavoltage x-rays (6 MV) and 12C beams (430 MeV u-1). The results obtained using pieces of irradiated films show the ability of the image reconstruction algorithm to correct for pixel bleeding even in the presence of extremely sharp dose gradients. Corrections for geometric distortion and position dependence of light collection efficiency were shown to minimize characteristic limitations of this system design. We also exemplify the application of the algorithm to more clinically relevant 6 MV x-ray beam and a 12C pencil beam, demonstrating the potential for small field dosimetry. The image reconstruction algorithm described here provides the foundation for laser-scanned OSL applied to 2D dosimetry.

  15. Image reconstruction algorithm for optically stimulated luminescence 2D dosimetry using laser-scanned Al2O3:C and Al2O3:C,Mg films.

    PubMed

    Ahmed, M F; Schnell, E; Ahmad, S; Yukihara, E G

    2016-10-21

    The objective of this work was to develop an image reconstruction algorithm for 2D dosimetry using Al2O3:C and Al2O3:C,Mg optically stimulated luminescence (OSL) films imaged using a laser scanning system. The algorithm takes into account parameters associated with detector properties and the readout system. Pieces of Al2O3:C films (~8 mm  ×  8 mm  ×  125 µm) were irradiated and used to simulate dose distributions with extreme dose gradients (zero and non-zero dose regions). The OSLD film pieces were scanned using a custom-built laser-scanning OSL reader and the data obtained were used to develop and demonstrate a dose reconstruction algorithm. The algorithm includes corrections for: (a) galvo hysteresis, (b) photomultiplier tube (PMT) linearity, (c) phosphorescence, (d) 'pixel bleeding' caused by the 35 ms luminescence lifetime of F-centers in Al2O3, (e) geometrical distortion inherent to Galvo scanning system, and (f) position dependence of the light collection efficiency. The algorithm was also applied to 6.0 cm  ×  6.0 cm  ×  125 μm or 10.0 cm  ×  10.0 cm  ×  125 µm Al2O3:C and Al2O3:C,Mg films exposed to megavoltage x-rays (6 MV) and (12)C beams (430 MeV u(-1)). The results obtained using pieces of irradiated films show the ability of the image reconstruction algorithm to correct for pixel bleeding even in the presence of extremely sharp dose gradients. Corrections for geometric distortion and position dependence of light collection efficiency were shown to minimize characteristic limitations of this system design. We also exemplify the application of the algorithm to more clinically relevant 6 MV x-ray beam and a (12)C pencil beam, demonstrating the potential for small field dosimetry. The image reconstruction algorithm described here provides the foundation for laser-scanned OSL applied to 2D dosimetry.

  16. Quantifying protein adsorption on combinatorially sputtered Al-, Nb-, Ta- and Ti-containing films with electron microprobe and spectroscopic ellipsometry

    NASA Astrophysics Data System (ADS)

    Byrne, T. M.; Lohstreter, L.; Filiaggi, M. J.; Bai, Zhijun; Dahn, J. R.

    2009-04-01

    Although metallic biomaterials are widely used, systematic studies of protein adsorption onto such materials are generally lacking. Combinatorial binary libraries of Al 1-xNb x, Al 1-xTa x, Al 1-xTi x, Nb 1-xTa x, Nb 1-xTi x, and Ta 1-xTi x (0 ⩽ x ⩽ 1) and a ternary library of Al 1-xTi xTa y (0 ⩽ x ⩽ 1 and 0 ⩽ y ⩽ 0.7), along with their corresponding pure element films were sputtered onto glass substrates using a unique magnetron sputtering technique. Films were characterized with wavelength-dispersive spectroscopy (WDS), X-ray diffraction (XRD) and X-ray photoelectron spectroscopy (XPS). Fibrinogen and albumin adsorption amounts were measured by wavelength-dispersive spectroscopy (WDS) and spectroscopic ellipsometry (SE) equipment, both high throughput techniques with automated motion stage capabilities. Protein adsorption onto these films was found to be closely correlated to the alumina surface fraction, with high alumina content at the surface leading to low amounts of adsorbed fibrinogen and albumin. Protein adsorption amounts obtained with WDS and SE were in good agreement for all films.

  17. Room Temperature Growth of Al-Doped ZnO Thin Films by Reactive DC Sputtering Technique with Metallic Target

    NASA Astrophysics Data System (ADS)

    Hasuike, Noriyuki; Nishio, Koji; Kisoda, Kenji; Harima, Hiroshi

    2013-01-01

    We prepared Al-deopd ZnO (AZO) films by reactive DC sputtering method using metallic target at room temperature. All the tested AZO films (0<[Al]<8.9%) with the transmittance above 85% in visible region were successfully grown on quartz substrate. All the AZO films have wurtzite structure with no impurity phase. The AZO films with [Al]<2.9% have the preferential orientation in c-axis direction, and the orientation became indistinct as increasing in Al content. In the optical measurement, the absorption edge was shifted from 3.30 to 3.66 eV due to Burstein-Moss effect, and the electron densities were roughly estimated at 2.5×1019 to 1.5×1021 cm-3, respectively. On the other hand, the high transmittance in infrared region suggested low electron mobility. Since this gives rise to the high electric resistivity, the further improvements and optimization of the growth conditions are required for the realization of AZO based transparent conductive.

  18. The investigation of Ni-Al and Co-Al based layered double hydroxides and their derived mixed oxides thin films deposited by pulsed laser deposition

    NASA Astrophysics Data System (ADS)

    Birjega, R.; Matei, A.; Filipescu, M.; Stokker-Cheregi, F.; Luculescu, C.; Colceag, D.; Zavoianu, R.; Pavel, O. D.; Dinescu, M.

    2013-08-01

    Layered Double Hydroxides (LDHs) are host-guest materials consisting of positively charged metal/hydroxides sheets with intercalated anions and water molecules. LDHs can be described by the generic formula [[ṡmHO and their structure is formed by layers containing divalent cations (M2+: Mg, Zn, Ni, Co,…) and trivalent cations (M3+: Al, Ga, Cr,…) with an octahedral coordination. LDH films with well-oriented structure and controlled thickness are needed for numerous applications like sensors, protective coatings, catalysts, components for optoelectronics etc. In this work, we report on the deposition of Ni-Al and Co-Al based LDHs and their derived mixed oxides by pulsed laser deposition as a new approach to fabricate oriented LDHs or highly dispersed metallic mixed oxides. The influence of the laser characteristics, such as wavelength and fluence, on the films properties was studied. The films investigation techniques were X-Ray Diffraction, Atomic Force Microscopy, Scanning Electron Microscopy combined with energy dispersive X-ray analysis, and Secondary Ions Mass Spectrometry.

  19. Reduction of Ordering Temperature of FePt Al2O3 Thin Films by N2 Addition During Sputtering

    NASA Astrophysics Data System (ADS)

    Cao, Jiang-Wei; Katayama, N.; Yang, Zheng; Wei, Fu-Lin; Matsumoto, M.; Morisako, A.; Liu, Xiao-Xi; Takei, S.

    2005-11-01

    We investigate the effect of N2 addition during sputtering on the microstructure and magnetic properties of FePt-Al2O3 thin films. The texture of FePt phase in FePt-Al2O3 thin films changes from (111) to a more random orientation by N2 addition during sputtering. The ordering temperature of FePt phase reduces about 100°C with appropriate N2 partial pressure. A larger coercivity of 6.0×105 A/m is obtained with N2 partial pressure about 15%. Structural analysis reveals that a small quantity of Fe3N phase forms during sputtering and the release of N atoms during the post annealing induces a large number of vacancies in the films, which benefits to the transformation of FePt phase from fcc to fct.

  20. Stopping powers of LiF thin films deposited onto self-supporting Al foils for swift protons

    NASA Astrophysics Data System (ADS)

    Damache, Smail; Moussa, Djamel; Ouichaoui, Saâd

    2013-08-01

    The energy losses of ˜(0.273-3.334) MeV protons in LiF thin films deposited by vacuum evaporation onto self-supporting Al foils have been measured using the transmission method. The thicknesses of selected and used LiF/Al target samples were accurately determined via systematic energy loss measurements for alpha particles from a very thin mixed 241Am/239Pu/233U radioactive source. The samples were investigated in detail for their stoichiometry and their impurity contents by backscattering Rutherford spectrometry and nuclear reaction analysis. Then, LiF stopping powers have been determined with overall relative uncertainty of less than 2.7% arising mainly from errors in the determination of target sample thicknesses. These S(E) data are reported and discussed in comparison to previous experimental data sets from the literature and to values calculated by the Sigmund-Schinner binary collision stopping theory both for molecular LiF, and for the LiF compound assuming Bragg-Kleeman's additivity rule. Our S(E) data show to be in excellent agreement with the latter theory for molecular LiF over the whole proton energy range explored, which supports the use of modified electronic hydrogen wave functions for evaluating atomic shell corrections in the case of low-Z2 target materials. In contrast, they exhibit a slightly increasing deviation from theoretical values derived for the LiF compound with assuming stopping force additivity as the proton energy decreases from E ≈ 400 keV towards lower proton velocities. This deviation in excess relative to experimental data, amounting only up to (at most) ˜2.5%, can be ascribed to strong effects of 2s-state valence electrons of Li atoms within the LiF compound. Besides, the comparison to values calculated by the SRIM-2008 computer code indicates that this program satisfactorily accounts for our S(E) data above E ≈ 1.30 MeV but underestimates them with substantially increasing deviations (up to ˜11%) towards lower proton

  1. Impact of the surface-near silicon substrate properties on the microstructure of sputter-deposited AlN thin films

    SciTech Connect

    Schneider, M.; Bittner, A.; Patocka, F.; Schmid, U.; Stoeger-Pollach, M.

    2012-11-26

    In micro-/nanomachined devices and systems, aluminum nitride (AlN) thin films are widely used due to their piezoelectric properties. This work evaluates the potential of modifying the interface between the AlN thin film and the silicon (Si) wafer serving as bottom electrode for optimized crystallographic orientation and, hence, improved electrical and piezoelectric properties. The films were analyzed using temperature-dependant leakage current measurements, transmission electron microscopy, and x-ray diffraction. By preconditioning of the Si substrate surface applying sputter etching prior to film deposition, leakage current levels are substantially decreased and an increased (002) orientation of the AlN grains is observed.

  2. Impact of the surface-near silicon substrate properties on the microstructure of sputter-deposited AlN thin films

    NASA Astrophysics Data System (ADS)

    Schneider, M.; Bittner, A.; Patocka, F.; Stöger-Pollach, M.; Halwax, E.; Schmid, U.

    2012-11-01

    In micro-/nanomachined devices and systems, aluminum nitride (AlN) thin films are widely used due to their piezoelectric properties. This work evaluates the potential of modifying the interface between the AlN thin film and the silicon (Si) wafer serving as bottom electrode for optimized crystallographic orientation and, hence, improved electrical and piezoelectric properties. The films were analyzed using temperature-dependant leakage current measurements, transmission electron microscopy, and x-ray diffraction. By preconditioning of the Si substrate surface applying sputter etching prior to film deposition, leakage current levels are substantially decreased and an increased (002) orientation of the AlN grains is observed.

  3. Effects of Al, Ga-DOPING on Transparent Conducting Properties of Amorphous ZnO-SnO2 Films

    NASA Astrophysics Data System (ADS)

    Moriga, Toshihiro; Nishimura, Yusuke; Suketa, Hiroshi; Murai, Kei-Ichiro; Nogami, Kazuhiro; Tominaga, Kikuo; Nakabayashi, Ichiro

    ZnOSnO2 thin films were deposited on glass substrates (Corning#1737) by DC magnetron sputtering. In this works, we examined a doping effect on a ZnO target on transparent conducting properties. ZnO:Al(4wt%), and ZnO:Ga(6wt%) targets were used for a dopant-free ZnO target. Substrate temperature was held at 250°C. The current ratio δ was defined as IZn/IZ+ISn (ZnO target current divided by the sum of ZnO and SnO2 target currents). Compositions of as-deposited films were changed with the current ratio δ. In the ZnO-SnO2 system, amorphous transparent films appeared over the range of 0.33≤δ≤0.73. On the other hand, in the ZnO:Al(4wt%)-SnO2 and ZnO:Ga(6wt%)-SnO2 systems, they appeared over the range of 0.20≤δ≤0.80 and 0.33≤δ≤0.80, ≤δ≤ respectively. The minimum resistivity of amorphous films was about 3.0×10-2 Ωcm for all the systems. Al, Ga doping effect on film resistivity was not clear very much. But optical transparencies were 80-90% in visible region, 10% higher than those of ZnO-SnO2 system at average. Optical band gap for the films with the same current ratio δ also was enhanced by the Al, Ga doping.

  4. Influences of defects evolvement on the properties of sputtering deposited ZnO:Al films upon hydrogen annealing

    NASA Astrophysics Data System (ADS)

    Yin, Shiliu; Shirolkar, Mandar M.; Li, Jieni; Li, Ming; Song, Xiao; Dong, Xiaolei; Wang, Haiqian

    2016-06-01

    Understanding how the defects interact with each other and affect the properties of ZnO:Al films is very important for improving their performance as a transparent conductive oxide (TCO). In the present work, we studied the effects of hydrogen annealing on the structural, optical and electrical properties of ZnO:Al films prepared by magnetron sputtering. High resolution transmission electron microscopy observations reveal that annealing at ˜300 oC induces the formation of partial dislocations (PD) and stacking faults (SF), which disrupt the lattice periodicity leading to decreased grain size. Annealing at temperatures above ˜500 oC can remove the PD and SF, but large number of zinc vacancies will be generated. Our results show that when films are annealed at ˜500 oC, the oxygen-related defects (interstitials Oi, etc.) in the as-grown films can be remarkably removed or converted, which lead to increments in the carrier concentration, mobility, and the transmittance in the visible range. At annealing temperatures above 550 oC, the hydrogen etching effect becomes predominant, and Al donors are deactivated by zinc vacancies. We also find an abnormal endothermic process by thermal analysis and an abnormal increase in the resistivity during heating the sample under hydrogen atmosphere, based on which the interaction of Oi with the defects (mainly Al donors and PD) is discussed. It is also demonstrated that by annealing the as-grown AZO films at ˜500 oC under hydrogen atmosphere, high performance TCO films with a low resistivity of 4.48 × 10-4 Ωcm and high transmittance of above 90% in the visible light are obtained.

  5. Structural, optical and electrical properties of AlSb thin films deposited by pulsed laser deposition using aluminum-antimony alloying target

    NASA Astrophysics Data System (ADS)

    Yang, Ke; Li, Bing; Zhang, Jingquan; Li, Wei; Wu, Lili; Zeng, Guanggen; Wang, Wenwu; Liu, Cai; Feng, Lianghuan

    2017-02-01

    AlSb films which are a promising absorber layer for thin film solar cells were grown on glass substrate at different substrate temperature ranging from room temperature to 400 °C on glass substrates using aluminum-antimony alloying target by pulsed laser deposition (PLD) technique. Structural, optical and electrical properties of AlSb thin films were studied by X-ray diffraction (XRD), ultraviolet-visible spectrophotometer and a home-made four-probe-contact high temperature system respectively. XRD pattern shows that AlSb film is amorphous at room temperature, but when substrate temperature is higher than 100 °C, AlSb films present cubic phase structure with the preferential orientation of (111) plane. And intensity of diffraction peaks of AlSb film prepared at substrate temperature of 200 °C are stronger than that of other substrate temperature. The electrical measurement results show that conductivity activation energy of AlSb film is 0.25 eV and 0.28 eV. The indirect optical band gap is about 1.63 eV, which is very close to its theoretical value of 1.62 eV. The results of energy dispersive spectrometer (EDS) indicated the ratio of Al to Sb of AlSb films is about 1:1.

  6. Growth of epitaxial Ba 2YCu 3O 7- x films on LaAlO 3 (001)

    NASA Astrophysics Data System (ADS)

    Siegal, Michael P.; Phillips, Julia M.; Hsieh, Yong-Fen; Marshall, J. H.

    1990-12-01

    We report the ex situ growth of 1000 and 2000 Å epitaxial Ba 2YCu 3O 7- x ( BYCO) filmsonLaAlO3 (001 with surface morphologies and crystallinity generally associated with high quality in situ films. Films are grown by co-depositing BaF 2, Y and Cu in a stoichiometric ratio within 1% of 2:1:3, followed by annealing in a two-stage process in a tube furnace. By optimizing the annealing conditions, excellent crystallinity is obtained, with χ min∼ 2-4] from Rutherford backscattering/channeling. These films have sharp superconducting resistance transitions at 90-91 K. Critical current densities at 77 K are ∼ 10 6 A/cm 2 in zero magnetic field and ⪅ 10 5 A/cm 2 in H=0.9 T oriented perpendicular to the ab plane of the films.

  7. High quality ZnO:Al transparent conducting oxide films synthesized by pulsed filtered cathodic arc deposition

    SciTech Connect

    Anders, Andre; Lim, Sunnie H.N.; Yu, Kin Man; Andersson, Joakim; Rosen, Johanna; McFarland, Mike; Brown, Jeff

    2009-04-24

    Aluminum-doped zinc oxide, ZnO:Al or AZO, is a well-known n-type transparent conducting oxide with great potential in a number of applications currently dominated by indium tin oxide (ITO). In this study, the optical and electrical properties of AZO thin films deposited on glass and silicon by pulsed filtered cathodic arc deposition are systematically studied. In contrast to magnetron sputtering, this technique does not produce energetic negative ions, and therefore ion damage can be minimized. The quality of the AZO films strongly depends on the growth temperature while only marginal improvements are obtained with post-deposition annealing. The best films, grown at a temperature of about 200?C, have resistivities in the low to mid 10-4 Omega cm range with a transmittance better than 85percent in the visible part of the spectrum. It is remarkable that relatively good films of small thickness (60 nm) can be fabricated using this method.

  8. Comparison of the Sputter Rates of Oxide Films Relative to the Sputter Rate of SiO2

    SciTech Connect

    Baer, Donald R.; Engelhard, Mark H.; Lea, Alan S.; Nachimuthu, Ponnusamy; Droubay, Timothy C.; Kim, J.; Lee, B.; Mathews, C.; Opila, R. L.; Saraf, Laxmikant V.; Stickle, William F.; Wallace, Robert; Wright, B. S.

    2010-09-02

    Because of the increasing technological importance of oxide films for a variety of applications, there is a growing interest in knowing the sputter rates for a wide variety of oxides. To support needs of users of the Environmental Molecular Sciences Laboratory (EMSL) User facility as well as our research programs, we have made a series of measurements of the sputter rates for oxide films that have been grown by oxygen plasma assisted molecular beam epitaxy (OPA-MBE), pulsed laser deposition (PLD), Atomic Layer Deposition (ALD), electrochemical oxidation, or sputter deposition. The sputter rates for these oxide films were determined in comparison to the sputter rates for thermally grown SiO2, a common sputter rate reference material. The film thicknesses and densities of these films were usually measured using x-ray reflectivity (XRR). These samples were mounted in an x-ray photoelectron spectroscopy (XPS) system or an Auger electron spectrometer for sputtering measurements using argon ion sputtering. Although the primary objective was to determine relative sputter rates at a fixed angle, the measurements were also used to determine: i) the angle dependence of the relative sputter rates; ii) the energy dependence of the relative sputter rates; and iii) the extent of ion beam reduction for the various oxides. Materials examined include: SiO2 (reference films), Al2O3, CeO2, Cr2O3, Fe2O3, HfO2, ITO (In-Sn-oxide) Ta2O5, TiO2 (anatase and rutile) and ZnO. We find that the sputter rates for the oxides can vary up to a factor of two (usually slower) from that observed for SiO2. The ratios of sputter rates to SiO2 appear to be relatively independent of ion beam energy for the range of 1kV to 4 kV and for incident angles of less than 50º. As expected, the ion beam reduction of the oxides varies with the sputter angle. These studies demonstrate that we can usually obtain sputter rate reproducibility better than 5% for similar oxide films.

  9. Characterization and mechanical properties investigation of TiN-Ag films onto Ti-6Al-4V

    NASA Astrophysics Data System (ADS)

    Du, Dongxing; Liu, Daoxin; Zhang, Xiaohua; Tang, Jingang; Xiang, Dinggen

    2016-03-01

    To investigate their effect on fretting fatigue (FF) resistance of a Ti-6Al-4V alloy, hard solid lubricating composite films of TiN with varying silver contents (TiN-Ag) were deposited on a Ti-6Al-4V alloy using ion-assisted magnetron sputtering. The surface morphology and structure were analyzed by atomic force microscopy, X-ray diffractometry, X-ray photoelectron spectroscopy, and transmission electron microscopy. The hardness, bonding strength, and toughness of films were tested using a micro-hardness tester, scratch tester, and a repeated press-press test system that was manufactured in-house, respectively. The FF resistance of TiN-Ag composite films was studied using self-developed devices. The results show that the FF resistance of a titanium alloy can be improved by TiN-Ag composite films, which were fabricated using hard TiN coating doped with soft Ag. The FF life of Ag0.5, Ag2, Ag5, Ag10 and Ag20 composite films is 2.41, 3.18, 3.20, 2.94 and 2.87 times as great as that of the titanium alloy, respectively. This is because the composite films have the better toughness, friction lubrication, and high bonding strength. When the atomic fraction of Ag changes from 2% to 5%, the FF resistance of the composite films shows the best performance. This is attributed to the surface integrity of the composite film is sufficiently fine to prevent the initiation and early propagation of FF cracks.

  10. Highly transparent and conductive Al-doped ZnO nanoparticulate thin films using direct write processing.

    PubMed

    Vunnam, S; Ankireddy, K; Kellar, J; Cross, W

    2014-05-16

    Solution processable Al-doped ZnO (AZO) thin films are attractive candidates for low cost transparent electrodes. We demonstrate here an optimized nanoparticulate ink for the fabrication of AZO thin films using scalable, low-cost direct write processing (ultrasonic spray deposition) in air at atmospheric pressure. The thin films were made via thermal processing of as-deposited films. AZO films deposited using the proposed nanoparticulate ink with further reducing in vacuum and rf plasma of forming gas exhibited optical transparency greater than 95% across the visible spectrum, and electrical resistivity of 0.5 Ω cm and it drops down to 7.0 × 10(-2) Ω cm after illuminating with UV light, which is comparable to commercially available tin doped indium oxide colloidal coatings. Various structural analyses were performed to investigate the influence of ink chemistry, deposition parameters, and annealing temperatures on the structural, optical, and electrical characteristics of the spray deposited AZO thin films. Optical micrographs confirmed the presence of surface defects and cracks using the AZO NPs ink without any additives. After adding N-(2-Aminoethyl)-3-aminopropylmethyldimethoxy silane to the ink, AZO films exhibited an optical transparency which was virtually identical to that of the plain glass substrate.

  11. Substrate Heating Effect on c-Axis Texture and Piezoelectric Properties of AlN Thin Films Deposited by Unbalanced Magnetron Sputtering

    NASA Astrophysics Data System (ADS)

    Hasheminiasari, Masood; Lin, Jianliang

    2016-06-01

    Aluminum nitride (AlN) thin films with highly preferred (002) orientations have been reactively deposited by a pulsed-closed field unbalanced magnetron sputtering system using TiN/Ti as the seed/adhesion layer with various substrate temperatures. The texture, orientation and piezoelectric properties of AlN films were characterized by means of x-ray diffraction, rocking curves and laser interferometry. A Michelson laser interferometer was designed and built to obtain the converse piezoelectric response of the deposited AlN thin films. It was found that a slight substrate temperature increase would significantly affect the (002) orientation and the piezoelectric coefficient of AlN thin films compared to the coating obtained with no intentional substrate heating, while higher temperature applications on substrate deteriorated the c-axis texture of the coatings without significant improvement in the piezoelectric response of AlN films.

  12. Phase-coherent electron transport in (Zn, Al)O{sub x} thin films grown by atomic layer deposition

    SciTech Connect

    Saha, D. E-mail: pmisra@rrcat.gov.in; Misra, P. E-mail: pmisra@rrcat.gov.in; Ajimsha, R. S.; Joshi, M. P.; Kukreja, L. M.

    2014-11-24

    A clear signature of disorder induced quantum-interference phenomena leading to phase-coherent electron transport was observed in (Zn, Al)O{sub x} thin films grown by atomic layer deposition. The degree of static-disorder was tuned by varying the Al concentration through periodic incorporation of Al{sub 2}O{sub 3} sub-monolayer in ZnO. All the films showed small negative magnetoresistance due to magnetic field suppressed weak-localization effect. The temperature dependence of phase-coherence length (l{sub φ}∝T{sup −3/4}), as extracted from the magnetoresistance measurements, indicated electron-electron scattering as the dominant dephasing mechanism. The persistence of quantum-interference at relatively higher temperatures up to 200 K is promising for the realization of ZnO based phase-coherent electron transport devices.

  13. Epitaxial films of Sm 1-xGd xAl 2, a zero-moment ferromagnet

    NASA Astrophysics Data System (ADS)

    Avisou, A.; Dumesnil, K.; Dufour, C.

    2007-09-01

    Bulk Sm 1-xGd xAl 2 (0.003< x<0.02) compound exhibits an exciting magnetic property: its magnetic moment drops to zero at a compensation temperature Tcomp while it maintains a long-range ferromagnetic order. This compound is, therefore, an interesting candidate for electron spin analyzer or polarizer purposes. We achieved the epitaxial growth of (1 1 1) Sm 1-xGd xAl 2 films by molecular beam epitaxy. Macroscopic magnetization measurements confirmed the existence of a magnetic compensated state occurring at a temperature that depends on the concentration of Gd. Specific features observed in the Sm 1-xGd xAl 2 films are a strong [1 1 1] perpendicular magnetization direction and a very large coercivity.

  14. In situ study of dislocation behavior in columnar Al thin film on Si substrate during thermal cycling

    SciTech Connect

    Allen, C. W.; Schroeder, H.; Hiller, J. M.

    1999-12-13

    In situ transmission electron microscopy (150 kV) has been employed to study the evolution of dislocation microstructure during relatively rapid thermal cycling of a 200 nm Al thin film on Si substrate. After a few thermal cycles between 150 and 500 C, nearly stable Al columnar grain structure is established with average grain less than a {micro}m. On rapid cooling (3--30+ C/s) from 500 C, dislocations first appear at a nominal temperature of 360--380 C, quickly multiplying and forming planar glide plane arrays on further cooling. From a large number of such experiments the authors have attempted to deduce the dislocation evolution during thermal cycling in these polycrystalline Al films and to account qualitatively for the results on a simple dislocation model.

  15. Laser irradiation of ZnO:Al/Ag/ZnO:Al multilayers for electrical isolation in thin film photovoltaics

    PubMed Central

    2013-01-01

    Laser irradiation of ZnO:Al/Ag/ZnO:Al transparent contacts is investigated for segmentation purposes. The quality of the irradiated areas has been experimentally evaluated by separation resistance measurements, and the results are complemented with a thermal model used for numerical simulations of the laser process. The presence of the Ag interlayer plays two key effects on the laser scribing process by increasing the maximum temperature reached in the structure and accelerating the cool down process. These evidences can promote the use of ultra-thin ZnO:Al/Ag/ZnO:Al electrode in large-area products, such as for solar modules. PMID:24053228

  16. Oscillatory behavior of perpendicular magnetic anisotropy in Pt/Co/Al(Ox) films as a function of Al thickness

    NASA Astrophysics Data System (ADS)

    Dahmane, Y.; Arm, C.; Auffret, S.; Ebels, U.; Rodmacq, B.; Dieny, B.

    2009-11-01

    The evolution of the perpendicular magnetic anisotropy of Pt/Co/AlOx structures has been followed by extraordinary Hall Effect measurements as a function of both Al thickness and annealing treatment. A nonmonotonous evolution of the magnetic anisotropy is observed with increasing aluminum thickness, with a maximum around 1.4 nm attributed to the formation of quantum well states in the remaining metallic Al layer. This maximum gradually disappears after annealing. High resolution electron microscopy images indicate that the vanishing of this maximum is associated with homogenization of oxygen throughout the whole Al layer.

  17. Corrosion behavior and biocompatibility of nanostructured TiO2 film on Ti6Al4V.

    PubMed

    Karpagavalli, Ramji; Zhou, Anhong; Chellamuthu, Prithiviraj; Nguyen, Kytai

    2007-12-15

    The corrosion behavior and cell adhesion property of nanostructured TiO2 films deposited electrolytically on Ti6Al4V were examined in the present in vitro study. The nanostructured TiO2 film deposition on Ti6Al4V was achieved via peroxoprecursors. SEM micrographs exhibit the formation of amorphous and crystallite TiO2 nanoparticles on Ti6Al4V before and after being annealed at 500 degrees C. Corrosion behavior of TiO2-deposited and uncoated Ti6Al4V was evaluated in freely aerated Hank's solution at 37 degrees C by the measurement and analysis of open-circuit potential variation with time, Tafel plots, and electrochemical impedance spectroscopy. The electrochemical results indicated that nano-TiO2 coated Ti6Al4V showed a better corrosion resistance in simulated biofluid than uncoated Ti6Al4V. Rat bone cells and human aortic smooth muscle cells were grown on these substrates to study the cellular responses in vitro. The SEM images revealed enhanced cell adhesion, cell spreading, and proliferation on nano-TiO2 coated Ti6Al4V compared to those grown on uncoated substrates for both cell lines. These results suggested that nanotopography produced by deposition of nanostructured TiO2 onto Ti alloy surfaces might enhance corrosion resistance, biocompatibility, and cell integration for implants made of Ti alloys.

  18. Compositional inhomogeneities in AlGaN thin films grown by molecular beam epitaxy: Effect on MSM UV photodetectors

    NASA Astrophysics Data System (ADS)

    Pramanik, Pallabi; Sen, Sayantani; Singha, Chirantan; Roy, Abhra Shankar; Das, Alakananda; Sen, Susanta; Bhattacharyya, A.

    2016-10-01

    Ultraviolet (UV) MSM photodetectors (PD) based on AlGaN alloys find many applications, including flame sensing. In this work we investigate the dependence of AlGaN based photodetectors grown by MBE on the kinetics of growth. MSM photodetectors were fabricated in the interdigitated configuration with Ni/Au contacts having 400 μm finger length and 10 μm finger spacing. Bulk Al0.4Ga0.6N films were grown on to sapphire substrates using an AlN buffer layer. A series of PDs were developed using the Al0.4Ga0.6N films grown under different group III/V flux ratios ranging from stoichiometric conditions to much higher than unity. Upon testing, it was observed that the otherwise identical photodetectors show significant decrease in dark current as AlGaN deposition conditions change from stoichiometric to excess group III, due to reduction of unintentional incorporation of oxygen-related point defects. In addition, the intensity and spectral dependence of the photocurrent also change, showing an extended low energy tail for the former and a sharp and prominent excitonic peak for the latter. The optical transmission measurements indicate a variation in Urbach energy with deposition conditions of the AlGaN films, although they have the same absorption edge. While all samples show a single red-shifted photoluminescence peak at room temperature, upon cooling, multiple higher energy peaks appear in the photoluminescence (PL) spectra, indicating that the alloys contain complex compositional inhomogeneities. Two types of alloy fluctuations, determined by the growth conditions, have been identified that modulate the optoelectronic properties of AlGaN by changing the spatial localization of excitons, thereby altering their stability. We identified that growth under stoichiometric conditions leads to compositional inhomogeneities that play a detrimental role in the operation of MSM photodetectors, which reduces the sharpness of the sensitivity edge, while growth under excess metal

  19. Quasi-Two-Dimensional Electron Gas Behavior in Doped LaAlO3 Thin Films on SrTiO3 Substrates

    DTIC Science & Technology

    2013-04-03

    REPORT Quasi-two-dimensional electron gas behavior in doped LaAlO3 thin films on SrTiO3 substrates 14. ABSTRACT 16. SECURITY CLASSIFICATION OF: We have...demonstrated the growth of Tm and Lu doped LaAlO3 epitaxial thin films on single crystal (001) SrTiO3 substrates. These rare-earth dopants...gas behavior in doped LaAlO3 thin films on SrTiO3 substrates Report Title ABSTRACT We have demonstrated the growth of Tm and Lu doped LaAlO3 epitaxial

  20. Dual Mode Thin Film Bulk Acoustic Resonators (FBARs) Based on AlN, ZnO and GaN Films with Tilted c-Axis Orientation

    DTIC Science & Technology

    2010-01-01

    FBARs fabri - cation, and their thickness usually ranges from several mi- crometers down to tenth of micrometers, which results in high resonant...mentioned be- fore. Films with in-plane polarization have also been fabri - cated on certain substrate crystal such as tetragonal LiAlO2 100 for...dynamics, and cerebral aneurysm diseases ; his research work is also related to experimental and medical device design. Hongbin Cheng received his

  1. Optical and structural properties of Al-doped ZnO thin films by sol gel process.

    PubMed

    Jun, Min-Chul; Koh, Jung-Hyuk

    2013-05-01

    Transparent conducting oxide (TCO) materials with high transmittance and good electrical conductivity have been attracted much attention due to the development of electronic display and devices such as organic light emitting diodes (OLEDs), and dye-sensitized solar cells (DSSCs). Aluminum doped zinc oxide thin films (AZO) have been well known for their use as TCO materials due to its stability, cost-effectiveness, good optical transmittance and electrical properties. Especially, AZO thin film, which have low resistivity of 2-4 x 10(-4) omega x cm which is similar to that of ITO films with wide band gap semiconductors. The AZO thin films were deposited on glass substrates by sol-gel spin-coating process. As a starting material, zinc acetate dihydrate (Zn(CH3COO)2 x 2H2O) and aluminum chloride hexahydrate (AlCl3 6H2O) were used. 2-methoxyethanol and monoethanolamine (MEA) were used as solvent and stabilizer, respectively. After deposited, the films were preheated at 300 degrees C on a hotplate and post-heated at 650 degrees C for 1.5 hrs in the furnace. We have studied the structural and optical properties as a function of Al concentration (0-2.5 mol.%).

  2. A comparison of the performance of modern screen-film and digital mammography systems

    NASA Astrophysics Data System (ADS)

    Monnin, P.; Gutierrez, D.; Bulling, S.; Lepori, D.; Valley, J.-F.; Verdun, F. R.

    2005-06-01

    This work compares the detector performance and image quality of the new Kodak Min-R EV mammography screen-film system with the Fuji CR Profect detector and with other current mammography screen-film systems from Agfa, Fuji and Kodak. Basic image quality parameters (MTF, NPS, NEQ and DQE) were evaluated for a 28 kV Mo/Mo (HVL = 0.646 mm Al) beam using different mAs exposure settings. Compared with other screen-film systems, the new Kodak Min-R EV detector has the highest contrast and a low intrinsic noise level, giving better NEQ and DQE results, especially at high optical density. Thus, the properties of the new mammography film approach those of a fine mammography detector, especially at low frequency range. Screen-film systems provide the best resolution. The presampling MTF of the digital detector has a value of 15% at the Nyquist frequency and, due to the spread size of the laser beam, the use of a smaller pixel size would not permit a significant improvement of the detector resolution. The dual collection reading technology increases significantly the low frequency DQE of the Fuji CR system that can at present compete with the most efficient mammography screen-film systems.

  3. A comparison of the performance of modern screen-film and digital mammography systems.

    PubMed

    Monnin, P; Gutierrez, D; Bulling, S; Lepori, D; Valley, J-F; Verdun, F R

    2005-06-07

    This work compares the detector performance and image quality of the new Kodak Min-R EV mammography screen-film system with the Fuji CR Profect detector and with other current mammography screen-film systems from Agfa, Fuji and Kodak. Basic image quality parameters (MTF, NPS, NEQ and DQE) were evaluated for a 28 kV Mo/Mo (HVL = 0.646 mm Al) beam using different mAs exposure settings. Compared with other screen-film systems, the new Kodak Min-R EV detector has the highest contrast and a low intrinsic noise level, giving better NEQ and DQE results, especially at high optical density. Thus, the properties of the new mammography film approach those of a fine mammography detector, especially at low frequency range. Screen-film systems provide the best resolution. The presampling MTF of the digital detector has a value of 15% at the Nyquist frequency and, due to the spread size of the laser beam, the use of a smaller pixel size would not permit a significant improvement of the detector resolution. The dual collection reading technology increases significantly the low frequency DQE of the Fuji CR system that can at present compete with the most efficient mammography screen-film systems.

  4. High-Q AlN/SiO2 symmetric composite thin film bulk acoustic wave resonators.

    PubMed

    Artieda, Alvaro; Muralt, Paul

    2008-11-01

    High-Q, bulk acoustic wave composite resonators based on a symmetric layer sequence of SiO(2)-AlN-SiO(2) sandwiched between electrodes have been developed. Acoustic isolation was achieved by means of deep silicon etching to obtain membrane type thin film bulk acoustic wave resonators (TFBARs). Three different device versions were investigated. The SiO(2) film thicknesses were varied (0 nm, 70 nm, 310 nm, and 770 nm) while the piezoelectric AlN film had a constant thickness of 1.2 microm. The sputter-deposited AlN film grown on the amorphous, sputter-deposited SiO(2) layer exhibited a d(33,f) of 4.0 pm/V. Experimental results of quality factors (Q) and coupling coefficients (k(t)(2)) are in agreement with finite element calculations. A Q of 2000 is observed for the first harmonic of the 310 nm oxide devices. The most intense resonance of the 770 nm oxide device is the third harmonic reaching Q factors of 1450. The temperature drift reveals the impact of the SiO(2) layers, which is more pronounced on the first harmonic, reducing the TCF to 4 ppm/K for the 3rd harmonic of the 310 nm oxide devices.

  5. Modeling the Growth of Aluminum Gallium Nitride ((Al)GaN) Films Grown on Aluminum Nitride (AlN) Substrates

    DTIC Science & Technology

    2011-03-01

    3.1 Slip Systems Analysis .....................................................................................................2 3.2 Simulations of...much like it has been done for hetero-epitaxial silicon-germanium ( SiGe ) films grown on silicon (Si) ( 1 , 2), which have the cubic zinc blende...calculations carried out using the Vienna Ab-Initio Simulation Package (VASP) code (4, 5 ) with projector augmented waves (generalized gradient

  6. Vertically aligned liquid crystals on a {gamma}-Al{sub 2}O{sub 3} alignment film using ion-beam irradiation

    SciTech Connect

    Park, Hong-Gyu; Kim, Young-Hwan; Oh, Byeong-Yun; Lee, Won-Kyu; Kim, Byoung-Yong; Seo, Dae-Shik; Hwang, Jeong-Yeon

    2008-12-08

    Using ion-beam (IB) irradiation, liquid crystals (LCs) were vertically aligned (VA) on a {gamma}-Al{sub 2}O{sub 3} alignment film. Atomic-layer deposition was used to orient the LCs on high-quality {gamma}-Al{sub 2}O{sub 3} alignment films. The LC molecule orientation indicates the vertical direction of the atomic-layer-deposited {gamma}-Al{sub 2}O{sub 3} alignment films. X-ray photoelectron spectroscopy showed that IB irradiation changed the chemical structure, shifting the Al-O binding energy and altering the Al-O bonding intensity. The low-voltage transmittance characteristics of the VA LC displays on the {gamma}-Al{sub 2}O{sub 3} alignment films were also measured, showing reduced voltage and power requirements.

  7. Atomic moments in Mn2CoAl thin films analyzed by X-ray magnetic circular dichroism

    DOE PAGES

    Jamer, M. E.; Assaf, B. A.; Sterbinsky, G. E.; ...

    2014-12-05

    Spin gapless semiconductors are known to be strongly affected by structural disorder when grown epitaxially as thin films. The magnetic properties of Mn2CoAl thin films grown on GaAs (001) substrates are investigated here as a function of annealing. This study investigates the atomic-specific magnetic moments of Mn and Co atoms measured through X-ray magnetic circular dichroism as a function of annealing and the consequent structural ordering. Results indicate that the structural distortion mainly affects the Mn atoms as seen by the reduction of the magnetic moment from its predicted value.

  8. Orbital two-channel Kondo effect in epitaxial ferromagnetic L10-MnAl films

    PubMed Central

    Zhu, L. J.; Nie, S. H.; Xiong, P.; Schlottmann, P.; Zhao, J. H.

    2016-01-01

    The orbital two-channel Kondo effect displaying exotic non-Fermi liquid behaviour arises in the intricate scenario of two conduction electrons compensating a pseudo-spin-1/2 impurity of two-level system. Despite extensive efforts for several decades, no material system has been clearly identified to exhibit all three transport regimes characteristic of the two-channel Kondo effect in the same sample, leaving the interpretation of the experimental results a subject of debate. Here we present a transport study suggestive of a robust orbital two-channel Kondo effect in epitaxial ferromagnetic L10-MnAl films, as evidenced by a magnetic field-independent resistivity upturn with a clear transition from logarithmic- to square-root temperature dependence and deviation from it in three distinct temperature regimes. Our results also provide an experimental indication of the presence of two-channel Kondo physics in a ferromagnet, pointing to considerable robustness of the orbital two-channel Kondo effect even in the presence of spin polarization of the conduction electrons. PMID:26905518

  9. Dynamic Friction Performance of a Pneumatic Cylinder with Al2O3 Film on Cylinder Surface.

    PubMed

    Chang, Ho; Lan, Chou-Wei; Wang, Hao-Xian

    2015-11-01

    A friction force system is proposed for accurately measuring friction force and motion properties produced by reciprocating motion of piston in a pneumatic cylinder. In this study, the proposed system is used to measure the effects of lubricating greases of different viscosities on the friction properties of pneumatic cylinder, and improvement of stick-slip motion for the cylinder bore by anodizing processes. A servo motor-driven ball screw is used to drive the pneumatic cylinder to be tested and to measure the change in friction force of the pneumatic cylinder. Experimental results show, that under similar test conditions, the lubricating grease with viscosity VG100 is best suited for measuring reciprocating motion of the piston of pneumatic cylinder. The wear experiment showed that, in the Al2O3 film obtained at a preset voltage 40 V in the anodic process, the friction coefficient and hardness decreased by 55% and increased by 274% respectively, thus achieving a good tribology and wear resistance. Additionally, the amplitude variation in the friction force of the pneumatic cylinder wall that received the anodizing treatment was substantially reduced. Additionally, the stick-slip motion of the pneumatic cylinder during low-speed motion was substantially improved.

  10. Effect of SiC interlayer between Ti6Al4V alloy and hydroxyapatite films.

    PubMed

    Azem, Funda Ak; Birlik, Isil; Braic, Viorel; Toparli, Mustafa; Celik, Erdal; Parau, Anca; Kiss, Adrian; Titorencu, Irina; Vladescu, Alina

    2015-04-01

    Bioactive coatings are frequently used to improve the osseointegration of the metallic implants used in dentistry or orthopaedics. Among different types of bioactive coatings, hydroxyapatite (Ca10(PO4)6(OH)2) is one of the most extensively used due to its chemical similarities to the components of bones and teeth. In this article, production and characterization of hydroxyapatite films deposited on Ti6Al4V alloy prepared by magnetron sputtering were reported. Besides, SiC was deposited on substrate surface to study the interlayer effect. Obtained coatings were annealed at 600 °C for 30 and 120 min in a mixed atmosphere of N2 + H2O vapours with the heating rate of 12 °C min(-1). The effects of SiC interlayer and heat treatment parameters on the structural, mechanical and corrosion properties were investigated. After heat treatment process, the crystalline hydroxyapatite was obtained. Additionally, cell viability tests were performed. The results show that the presence of the SiC interlayer contributes a decrease in surface roughness and improves the mechanical properties and corrosion performance of the hydroxyapatite coatings. Biological properties were not affected by the presence of the SiC interlayer.

  11. Orbital two-channel Kondo effect in epitaxial ferromagnetic L10-MnAl films

    DOE PAGES

    Zhu, L. J.; Nie, S. H.; Xiong, P.; ...

    2016-02-24

    The orbital two-channel Kondo effect displaying exotic non-Fermi liquid behaviour arises in the intricate scenario of two conduction electrons compensating a pseudo-spin-1/2 impurity of two-level system. Despite extensive efforts for several decades, no material system has been clearly identified to exhibit all three transport regimes characteristic of the two-channel Kondo effect in the same sample, leaving the interpretation of the experimental results a subject of debate. Here we present a transport study suggestive of a robust orbital two-channel Kondo effect in epitaxial ferromagnetic L10-MnAl films, as evidenced by a magnetic field-independent resistivity upturn with a clear transition from logarithmic- tomore » square-root temperature dependence and deviation from it in three distinct temperature regimes. Lastly, our results also provide an experimental indication of the presence of two-channel Kondo physics in a ferromagnet, pointing to considerable robustness of the orbital two-channel Kondo effect even in the presence of spin polarization of the conduction electrons.« less

  12. The impact of ultrathin Al2O3 films on the electrical response of p-Ge/Al2O3/HfO2/Au MOS structures

    NASA Astrophysics Data System (ADS)

    Botzakaki, M. A.; Skoulatakis, G.; Kennou, S.; Ladas, S.; Tsamis, C.; Georga, S. N.; Krontiras, C. A.

    2016-09-01

    It is well known that the most critical issue in Ge CMOS technology is the successful growth of high-k gate dielectrics on Ge substrates. The high interface quality of Ge/high-k dielectric is connected with advanced electrical responses of Ge based MOS devices. Following this trend, atomic layer deposition deposited ultrathin Al2O3 and HfO2 films were grown on p-Ge. Al2O3 acts as a passivation layer between p-Ge and high-k HfO2 films. An extensive set of p-Ge/Al2O3/HfO2 structures were fabricated with Al2O3 thickness ranging from 0.5 nm to 1.5 nm and HfO2 thickness varying from 2.0 nm to 3.0 nm. All structures were characterized by x-ray photoelectron spectroscopy (XPS) and AFM. XPS analysis revealed the stoichiometric growth of both films in the absence of Ge sub-oxides between p-Ge and Al2O3 films. AFM analysis revealed the growth of smooth and cohesive films, which exhibited minimal roughness (~0.2 nm) comparable to that of clean bare p-Ge surfaces. The electrical response of all structures was analyzed by C-V, G-V, C-f, G-f and J-V characteristics, from 80 K to 300 K. It is found that the incorporation of ultrathin Al2O3 passivation layers between p-Ge and HfO2 films leads to superior electrical responses of the structures. All structures exhibit well defined C-V curves with parasitic effects, gradually diminishing and becoming absent below 170 K. D it values were calculated at each temperature, using both Hill-Coleman and Conductance methods. Structures of p-Ge/0.5 nm Al2O3/2.0 nm HfO2/Au, with an equivalent oxide thickness (EOT) equal to 1.3 nm, exhibit D it values as low as ~7.4  ×  1010 eV-1 cm-2. To our knowledge, these values are among the lowest reported. J-V measurements reveal leakage currents in the order of 10-1 A cm-2, which are comparable to previously published results for structures with the same EOT. A complete mapping of the energy distribution of D its into the energy bandgap of p-Ge, from the valence band

  13. Deposition and parametric analysis of RF sputtered ZnO:Al thin films with very low resistivity

    NASA Astrophysics Data System (ADS)

    Jahed, N. M. S.; Mahmoudysepehr, M.; Sivoththaman, S.

    2016-11-01

    RF sputtered, aluminum-doped zinc oxide (ZnO:Al or AZO) is an attractive candidate material as transparent conductive oxides in the fabrication of opto-electronic devices. High electrical conductivity and optical transparency are two key requirements in such applications. This paper reports on the formation of AZO films on glass substrates in an RF-sputtering chamber modified to facilitate in situ heating during deposition. The influence of chamber pressure, RF power, and deposition temperature has been systematically studied and the electrical parameters such as film resistivity, carrier concentration, carrier mobility as well as optical transmission have been analyzed. Film deposition at 250 °C and a low chamber pressure of 0.5 mT resulted in a very low resistivity of 2.94 × 10-4 ohm cm. The structural properties of the films with the lowest resistivity have been further analyzed by x-ray diffraction (XRD) and PL measurements and are compared with the film deposited at room temperature. The XRD results show dominant peaks along (103) orientation for the AZO films with slightly improved crystal quality at higher temperature. Evolution of near band edge and deep level emission photoluminescence peaks also indicate improvement in crystal structure with increased deposition temperature.

  14. Structural, optical, and electrical properties of epitaxial titanium oxide thin films on LaAlO3 substrate

    NASA Astrophysics Data System (ADS)

    Sbaï, N.; Perrière, J.; Gallas, B.; Millon, E.; Seiler, W.; Bernard, M. C.

    2008-08-01

    Titanium oxide thin films were prepared by pulsed-laser deposition on LaAlO3 single crystal substrate at 700 °C. Pure anatase films are obtained at high oxygen pressure (10-1 mbar), while the rutile phase is evidenced at low oxygen pressure (10-5 mbar) despite a large oxygen deficiency (O/Ti=1.75). From asymmetric x-ray diffraction measurements, the in-plane epitaxial relationships be0tween the substrate and the titanium oxide phases are highlighted. Optical constants (refractive index n and extinction coefficient k) were deduced from ellipsometric measurements. The optical band gap energies of the anatase and rutile films are found to be 3.4 and 3.3 eV, respectively. Since the nearly stoichiometric anatase films are resistive (>103 Ω cm), the large oxygen deficiency in rutile films leads to noticeable increase in the conductivity due to the Ti3+ species, which supply electrons in the conduction band. At low temperature (T <200 K) the resistivity of rutile films versus temperature may be explained by a variable range hopping mechanism based on both two or three dimensional electron transfer between the Ti3+ and Ti4+ species.

  15. Investigation of the interrelation between the chemical state and the electric properties in Al-doped ZnO films

    NASA Astrophysics Data System (ADS)

    Wang, Jinzhao; Ni, Dongfang; Zhang, Tianjin; Wang, Duofa; Liang, Kun

    2015-09-01

    Transparent conducting Al-doped ZnO (AZO) thin films were prepared on glass substrates by radio frequency magnetron sputtering in pure Ar. The influence of the annealing atmosphere on the microstructure, chemical state, electric and optical properties of the AZO films was investigated with X-ray diffraction, field-emission scanning electron microscopy, X-ray photoelectron spectroscopy and Hall measurements. The AZO thin films annealed under vacuum had the highest carrier concentration of 2.488 × 1020 cm-3 and a Hall mobility of 16.35 cm2 V-1 s-1, while the AZO thin films annealed in air had the lowest carrier concentration of 4.182 × 1017 cm-3 and a Hall mobility of 2.375 cm2 V-1 s-1. The fitted narrow-scan O1 s spectra revealed that O1 s was composed of three components. The AZO thin films annealed under vacuum appeared to have a higher proportion of medium binding energy which correspond to O2- ions in the oxygen-deficient regions within the ZnO matrix, and have a lower proportion of high binding energy component which correspond to loosely bound chemisorbed oxygen. It believed that the oxygen vacancies and chemisorbed oxygen of the films played an important role in the electrical conductance. The carrier concentration increased with the formation of oxygen vacancies. The Hall mobility increased with desorption of the loosely bound oxygen.

  16. High performance AlScN thin film based surface acoustic wave devices with large electromechanical coupling coefficient

    SciTech Connect

    Wang, Wenbo; He, Xingli; Ye, Zhi E-mail: jl2@bolton.ac.uk; Wang, Xiaozhi; Mayrhofer, Patrick M.; Gillinger, Manuel; Bittner, Achim; Schmid, Ulrich

    2014-09-29

    AlN and AlScN thin films with 27% scandium (Sc) were synthesized by DC magnetron sputtering deposition and used to fabricate surface acoustic wave (SAW) devices. Compared with AlN-based devices, the AlScN SAW devices exhibit much better transmission properties. Scandium doping results in electromechanical coupling coefficient, K{sup 2}, in the range of 2.0% ∼ 2.2% for a wide normalized thickness range, more than a 300% increase compared to that of AlN-based SAW devices, thus demonstrating the potential applications of AlScN in high frequency resonators, sensors, and high efficiency energy harvesting devices. The coupling coefficients of the present AlScN based SAW devices are much higher than that of the theoretical calculation based on some assumptions for AlScN piezoelectric material properties, implying there is a need for in-depth investigations on the material properties of AlScN.

  17. Comparison of photovoltaic performance of TiO2 nanoparticles based thin films via different routes

    NASA Astrophysics Data System (ADS)

    Ji, Yajun

    2015-11-01

    Well crystallized TiO2 nanoparticles were prepared by hydrothermal and sol-gel routes, respectively. The morphologies, structures, crystallinity and optical properties of resulted TiO2 nanoparticles-based thin films via the two methods were examined by field emission scanning electron microscope (FE-SEM), transmission electron microscope (TEM), X-ray diffractometer (XRD) and reflectance spectra. In addition, comparison of photovoltaic performance of TiO2 nanoparticles-based thin films by the two methods was performed. It is found that the maximum energy conversion efficiency of 4.06% was achieved based on the obtained electrode via hydrothermal, which is much better than that of the sol-gels route. The uniform film structure with improved dye absorption capability, increased diffused reflectance property and relatively low charge recombination rates for injected electrons are believed to be responsible to the superior photoelectrochemical properties of dye-sensitized solar cells (DSSC) via hydrothermal route.

  18. [Filmless magnetic resonance tomography. Advantages and disadvantages in comparison with film reports].

    PubMed

    Vorbeck, F; al-Zayer, F; Jung, B; Breitenseher, M; Imhof, H

    1999-04-01

    At our hospital, an average MRI examination comprises 170 images. These examinations were evaluated exclusively on digital reporting systems with two high-resolution monitors for a period of 1 year. A retrospective analysis of this reporting method in comparison with films on a conventional viewing wall was performed with subjective and objective data. Radiologists and technicians were requested to evaluate the system on a subjective scale from 1 to 5 for seven topics (image analysis, inspection, time for reporting, handling, comparison with previous reports, quality of PC laser prints, training period). Moreover, personal interviews were conducted and protocols taken. Patient and image frequency, film costs, data transfer time and amount of system failures were evaluated as objective data. The most important results were: Two thirds of the film checking radiologists prefer the conventional viewing walls over the computer monitors. However, 70% of the residents prefer using the computer monitor for reporting. Seventy percent of the interviewed radiologists considered comparison with former examinations on film very difficult. Digitizing of former MRI examinations was not a convincing method; printing on a standard PC laser printer was considered to yield insufficient quality. The different acceptance between radiologists and residents seems to be related to different experiences. The reduction in film costs (48.6%) will improve further with complete PACS installation in the whole hospital. Data transfer rates are still poor; further improvement of network performance is necessary for convenient work. One whole MRI examination and report could be stored on CD-ROM for a cost of less than 2 euros. This could be a future means of cheap archiving and documentation suitable for viewing on any PC with DICOM III viewer. Images and reports could stay with the patients as in the past.

  19. Unveiling the Mechanism for the Split Hysteresis Loop in Epitaxial Co2Fe1-xMnxAl Full-Heusler Alloy Films

    NASA Astrophysics Data System (ADS)

    Tao, X. D.; Wang, H. L.; Miao, B. F.; Sun, L.; You, B.; Wu, D.; Zhang, W.; Oepen, H. P.; Zhao, J. H.; Ding, H. F.

    2016-01-01

    Utilizing epitaxial Co2Fe1-xMnxAl full-Heusler alloy films on GaAs (001), we address the controversy over the analysis for the split hysteresis loop which is commonly found in systems consisting of both uniaxial and fourfold anisotropies. Quantitative comparisons are carried out on the values of the twofold and fourfold anisotropy fields obtained with ferromagnetic resonance and vibrating sample magnetometer measurements. The most suitable model for describing the split hysteresis loop is identified. In combination with the component resolved magnetization measurements, these results provide compelling evidences that the switching is caused by the domain wall nucleation and movements with the switching fields centered at the point where the energy landscape shows equal minima for magnetization orienting near the easy axis and the field supported hard axis.

  20. Unveiling the Mechanism for the Split Hysteresis Loop in Epitaxial Co2Fe1-xMnxAl Full-Heusler Alloy Films

    PubMed Central

    Tao, X. D.; Wang, H. L.; Miao, B. F.; Sun, L.; You, B.; Wu, D.; Zhang, W.; Oepen, H. P.; Zhao, J. H.; Ding, H. F.

    2016-01-01

    Utilizing epitaxial Co2Fe1-xMnxAl full-Heusler alloy films on GaAs (001), we address the controversy over the analysis for the split hysteresis loop which is commonly found in systems consisting of both uniaxial and fourfold anisotropies. Quantitative comparisons are carried out on the values of the twofold and fourfold anisotropy fields obtained with ferromagnetic resonance and vibrating sample magnetometer measurements. The most suitable model for describing the split hysteresis loop is identified. In combination with the component resolved magnetization measurements, these results provide compelling evidences that the switching is caused by the domain wall nucleation and movements with the switching fields centered at the point where the energy landscape shows equal minima for magnetization orienting near the easy axis and the field supported hard axis. PMID:26733075

  1. Structural, morphological and optical characterizations of ZnO:Al thin films grown on silicon substrates by pulsed laser deposition

    NASA Astrophysics Data System (ADS)

    Alyamani, A.; Sayari, A.; Albadri, A.; Albrithen, H.; El Mir, L.

    2016-09-01

    The pulsed laser deposition (PLD) technique is used to grow Al-doped ZnO (AZO) thin films at 500 ° C on silicon substrates under vacuum or oxygen gas background from ablating AZO nanoparticle targets synthesized via the sol-gel process. The structural, morphological and optical properties were characterized by using X-ray diffraction (XRD), scanning electron microscopy (SEM), transmission electron microscopy (TEM), atomic force microscopy (AFM) and spectroscopic ellipsometry (SE) techniques. XRD and TEM images show that AZO powder has a wurtzite-type structure and is composed of small prismatic-like shape nanoparticles with an average size of 30nm. The structural properties of the AZO films grown under oxygen show no significant changes compared to those of the film grown under vacuum. However, the optical properties show a dependence on the growth conditions of the AZO films. Highly c -axis-oriented AZO thin films were obtained with grain size ˜ 15 nm. The stress in the AZO films is tensile as measured from the c -parameter. The dielectric function, the refractive index and the extinction coefficient as a function of the photon energy for the AZO films were determined by using spectroscopic ellipsometry measurements in the photon energy region from 1 to 6eV. The band gap energy was observed to slightly decrease in the presence of the O2 gas background and this may be attributed to the stress. The surface and volume energy loss functions are calculated and exhibit different behaviors in the energy range 1-6eV. Refractive indices of 1.9-2.1 in the visible region were obtained for the AZO films. Also, the electronic carrier concentration appears to be related to the presence of O2 during the growth process.

  2. Oxide film on 5052 aluminium alloy: Its structure and removal mechanism by activated CsF-AlF3 flux in brazing

    NASA Astrophysics Data System (ADS)

    Xiao, Bing; Wang, Dongpo; Cheng, Fangjie; Wang, Ying

    2015-05-01

    The oxide-film structure on the 5052 Al alloy and the film-removal mechanism by activated CsF-AlF3 flux in brazing were studied. Characterisation of the oxide film shows that thermally activated Mg, segregated from the alloy's interior, was significantly enriched and oxidised during medium-temperature brazing. Thus, the outer oxide surface consisted of the amorphous MgO-like phase, and the interior of the oxide film comprised mainly the amorphous MgO-like phase and dispersely distributed and less-ordered MgAl2O4. The MgO-like phase was the main obstacle to oxide removal in brazing. The activated ZnCl2-containing CsF-AlF3 flux effectively removed the oxide film, and the 5052 Al alloy was successfully brazed by the Zn-Al filler metal and activated flux. When Zn2+ in the molten flux permeated the oxide film through cracks, its chemical reaction with the Al substrate loosened the oxide film, which was eventually pushed out as the filler metal spread over the alloy surface.

  3. Influence of argon plasma on the deposition of Al2O3 film onto the PET surfaces by atomic layer deposition.

    PubMed

    Edy, Riyanto; Huang, Xiaojiang; Guo, Ying; Zhang, Jing; Shi, Jianjun

    2013-02-15

    In this paper, polyethyleneterephthalate (PET) films with and without plasma pretreatment were modified by atomic layer deposition (ALD) and plasma-assisted atomic layer deposition (PA-ALD). It demonstrates that the Al2O3 films are successfully deposited onto the surface of PET films. The cracks formed on the deposited Al2O3 films in the ALD, plasma pretreated ALD, and PA-ALD were attributed to the energetic ion bombardment in plasmas. The surface wettability in terms of water contact angle shows that the deposited Al2O3 layer can enhance the wetting property of modified PET surface. Further characterizations of the Al2O3 films suggest that the elevated density of hydroxyl -OH group improve the initial growth of ALD deposition. Chemical composition of the Al2O3-coated PET film was characterized by X-ray photoelectron spectroscopy, which shows that the content of C 1s reduces with the growing of O 1s in the Al2O3-coated PET films, and the introduction of plasma in the ALD process helps the normal growth of Al2O3 on PET in PA-ALD.

  4. Properties of atomic-layer-deposited Al2O3/ZnO dielectric films grown at low temperature for RF MEMS

    NASA Astrophysics Data System (ADS)

    Herrmann, Cari F.; Del Rio, Frank W.; George, Steven M.; Bright, Victor M.

    2005-01-01

    Al2O3/ZnO alloy films were grown at 100°C using atomic layer deposition (ALD) techniques. It has been previously established that the resistivity of these films can be tuned over a wide range by varying the amount of Zn in the film. Al2O3/ZnO ALD alloy films can therefore be designed with a dielectric constant high enough to provide a large down-state capacitance and a resistivity low enough to promote the dissipation of trapped charges. The material and electrical properties of the Al2O3/ZnO ALD films were investigated using Auger electron spectroscopy (AES), nanoindentation, and mercury probe measurements. Chemical analysis using AES confirmed the presence of both Al and Zn in the alloys. The nanoindentation measurements were used to calculate the Young's modulus and hardness of the films. Pure Al2O3 ALD was determined to have a modulus between 150 and 155 GPa and a hardness of ~8 GPa, while the results for pure ZnO ALD indicated a modulus between 120 and 140 GPa and a hardness of ~5 GPa. An Al2O3/ZnO ALD alloy displayed a modulus of 140-145 GPa, which falls between the two pure films, and a hardness of ~8 GPa, which is similar to the pure Al2O3 film. The dielectric constants of the ALD films were calculated from the mercury probe measurements and were determined to be around 6.8. These properties indicate that the Al2O3/ZnO ALD films can be engineered as a property specific dielectric layer for RF MEMS devices.

  5. Mössbauer spectroscopy study of Al distribution in BaAl{sub x}Fe{sub 12−x}O{sub 19} thin films

    SciTech Connect

    Przybylski, M. Żukrowski, J.; Harward, I.; Celiński, Z.

    2015-05-07

    Barium hexagonal ferrite (BaM) films grown on Si are a good candidate material for new-generations of on-wafer microwave devices operating at frequencies above 40 GHz. Doping BaM with Al increases the value of anisotropy field even more, and in combination with a large value of remanence, would allow one to create a self-biasing material/structure that would eliminate the need for permanent bias magnets in millimeter wave devices. To examine the occupation of Fe sublattices by Al ions, we carried out Conversion Electron Mössbauer Spectroscopy (CEMS) measurements at room temperature and zero magnetic field (after magnetizing the samples in a strong magnetic field). The spectra can be reasonably fitted with three components (sub-spectra) corresponding to different Fe sublattices. There are significant changes in the spectra with the addition of Al: The magnetic hyperfine field decreases for all three components, and their relative contributions also change remarkably. These observations are in agreement with the fact that the Al substitutes Fe, thus lowering the component contributions and the value of the hyperfine field. In addition, our previous XRD analysis indicates increasing grain misalignment with Al content, further supporting the CEMS data.

  6. Tunable optoelectronic properties of pulsed dc sputter-deposited ZnO:Al thin films: Role of growth angle

    NASA Astrophysics Data System (ADS)

    Kumar, Mohit; Singh, Ranveer; Nandy, Suman; Ghosh, Arnab; Rath, Satchidananda; Som, Tapobrata

    2016-07-01

    In this paper, we investigate the role of deposition angle on the physical properties and work function of pulsed dc sputter-deposited Al-doped zinc oxide (AZO) thin films. It is observed that average grain size and crystal quality increase with higher angle of deposition, yielding improved optical properties. A systematic blue shift as well as a decrease in the resistivity takes place with the increasing growth angle up to 70°, while an opposite trend is observed beyond that. In addition, the work function of AZO films is also measured using Kelvin probe force microscopy, which corroborates well with the optical and structural properties. The observed results are explained in the framework of growth angle induced diffusion and shadowing effects. The films deposited at higher angles will be important for rapid incorporation into new technological applications that require a transparent conductive oxide.

  7. Luminescence of (Mg,Zn)Al2O4:Tb mixed spinel thin films prepared by spin-coating

    NASA Astrophysics Data System (ADS)

    Kroon, R. E.; Tabaza, W. A. I.; Swart, H. C.

    2015-03-01

    MgAl2O4 and ZnAl2O4 both have the spinel structure and similar lattice constants, but the bandgap of MgAl2O4 is about double that of ZnAl2O4, making it interesting to consider the mixed spinel (MgxZn1-x)Al2O4 as a possible host for luminescent ions. Prior to preparing thin films, the Mg:Zn ratio and Tb concentration were optimized for green luminescence from the 5D4 - 7F5 transition of Tb3+ ions using nanocrystalline samples prepared by combustion synthesis. Thin films with x = 0.75 and 0.5 mol% Tb were spin-coated on Si(100) substrates using a solution of the nitrates of Mg, Zn, Al and Tb in ethanol, with ethylene glycol as complexing agent. Samples about 200 nm thick were obtained by sequentially depositing 10 layers at 3000 rpm for 30 s. Samples were annealed for 1 h in air before measuring their luminescence properties. For the sample annealed at 600 °C, x-ray diffraction showed the thin film had a strong (111) preferential orientation. Atomic force microscopy revealed a root means square roughness of 1 nm and Auger electron spectroscopy depth profiles showed a uniform layer with a sharp interface at the Si substrate. With an increase in annealing temperature up to 1000 °C, the luminescence increased while the surface became slightly rougher and the layer-substrate interface more interdiffused. Annealing the samples at 1200 °C resulted in diffusion of Si through the layer and the formation of an additional phase. While the green Tb emission was slightly reduced, blue emission from the 5D3 level of Tb3+ was greatly enhanced in these samples.

  8. Structure and electrical properties of Al-doped HfO₂ and ZrO₂ films grown via atomic layer deposition on Mo electrodes.

    PubMed

    Yoo, Yeon Woo; Jeon, Woojin; Lee, Woongkyu; An, Cheol Hyun; Kim, Seong Keun; Hwang, Cheol Seong

    2014-12-24

    The effects of Al doping in atomic-layer-deposited HfO2 (AHO) and ZrO2 (AZO) films on the evolutions of their crystallographic phases, grain sizes, and electric properties, such as their dielectric constants and leakage current densities, were examined for their applications in high-voltage devices. The film thickness and Al-doping concentration were varied in the ranges of 60-75 nm and 0.5-9.7%, respectively, for AHO and 55-90 nm and 1.0-10.3%, respectively, for AZO. The top and bottom electrodes were sputtered Mo films. The detailed structural and electrical property variations were examined as functions of the Al concentration and film thickness. The AHO films showed a transition from the monoclinic phase (Al concentration up to 1.4%) to the tetragonal/cubic phase (Al concentration 2.0-3.5%), and finally, to the amorphous phase (Al concentration >4.7%), whereas the AZO films remained in the tetragonal/cubic phase up to the Al concentration of 6.4%. For both the AHO and AZO films, the monoclinic and amorphous phases had dielectric constants of 20-25, and the tetragonal/cubic phases had dielectric constants of 30-35. The highest electrical performance levels for the application to the high-voltage charge storage capacitors in flat panel displays were achieved with the 4.7-9.7% Al-doped AHO films and the 2.6% Al-doped AZO films.

  9. Temperature dependent magnetic anisotropy of epitaxial Co{sub 2}FeAl films grown on GaAs

    SciTech Connect

    Qiao, Shuang; Nie, Shuaihua; Zhao, Jianhua; Zhang, Xinhui

    2015-03-07

    Co{sub 2}FeAl films with different thickness were prepared at different temperature by molecular beam epitaxy. Their magnetic anisotropy was studied by rotating magneto-optical Kerr rotation measurements under different temperature. It is found that the cubic anisotropy depends only on the temperature-dependent fourth order magneto-elastic coefficients. However, the results of growth and measurement temperature-dependent uniaxial anisotropy suggest that the uniaxial anisotropy of Co{sub 2}FeAl films may be attributed to contributions from both shear strain and anisotropic interfacial bonding. Our experimental findings proposed a new point of view to understand the origin of magnetic anisotropy in ferromagnet/GaAs(001) heterostructures.

  10. Growth temperature dependent structural and magnetic properties of epitaxial Co{sub 2}FeAl Heusler alloy films

    SciTech Connect

    Qiao, Shuang; Nie, Shuaihua; Zhao, Jianhua; Zhang, Xinhui

    2013-06-21

    The structural and magnetic properties of a series of Co{sub 2}FeAl Heusler alloy films grown on GaAs(001) substrate by molecular beam epitaxy have been studied. The epitaxial Co{sub 2}FeAl films with an ordered L{sub 21} structure have been successfully obtained at growth temperature of 433 K, with an in-plane cubic magnetic anisotropy superimposed with an unusual uniaxial magnetic anisotropy. With increasing growth temperature, the ordered L{sub 21} structure degrades. Meanwhile, the uniaxial anisotropy decreases and eventually disappears above 673 K. The interfacial bonding between As and Co or Fe atom is suggested to be responsible for the additional uniaxial anisotropy.

  11. Investigation of the HA film deposited on the porous Ti6Al4V alloy prepared via additive manufacturing

    NASA Astrophysics Data System (ADS)

    Surmeneva, M.; Chudinova, E.; Syrtanov, M.; Koptioug, A.; Surmenev, R.

    2015-11-01

    This study is focused on the use of radio frequency magnetron sputtering to modify the surface of porous Ti6Al4V alloy fabricated via additive manufacturing technology. The hydroxyapatite (HA) coated porous Ti6Al4V alloy was studied in respect with its chemical and phase composition, surface morphology, water contact angle and hysteresis, and surface free energy. Thin nanocrystalline HA film was deposited while its structure with diamond-shaped cells remained unchanged. Hysteresis and water contact angle measurements revealed an effect of the deposited HA films, namely an increased water contact angle and contact angle hysteresis. The increase of the contact angle of the coating-substrate system compared to the uncoated substrate was attributed to the multiscale structure of the resulted surfaces.

  12. Top gate ZnO-Al2O3 thin film transistors fabricated using a chemical bath deposition technique

    NASA Astrophysics Data System (ADS)

    Gogoi, Paragjyoti; Saikia, Rajib; Changmai, Sanjib

    2015-04-01

    ZnO thin films were prepared by a simple chemical bath deposition technique using an inorganic solution mixture of ZnCl2 and NH3 on glass substrates and then were used as the active material in thin film transistors (TFTs). The TFTs were fabricated in a top gate coplanar electrode structure with high-k Al2O3 as the gate insulator and Al as the source, drain and gate electrodes. The TFTs were annealed in air at 500 °C for 1 h. The TFTs with a 50 μm channel length exhibited a high field-effect mobility of 0.45 cm2/(V·s) and a low threshold voltage of 1.8 V. The sub-threshold swing and drain current ON-OFF ratio were found to be 0.6 V/dec and 106, respectively.

  13. Room temperature Ultraviolet B emission from InAlGaN films synthesized by plasma-assisted molecular beam epitaxy

    SciTech Connect

    Kong, W. Jiao, W. Y.; Kim, T. H.; Brown, A. S.; Roberts, A. T.; Fournelle, J.; Losurdo, M.; Everitt, H. O.

    2015-09-28

    Thin films of the wide bandgap quaternary semiconductor In{sub x}Al{sub y}Ga{sub (1−x−y)}N with low In (x = 0.01–0.05) and high Al composition (y = 0.40–0.49) were synthesized on GaN templates by plasma-assisted molecular beam epitaxy. High-resolution X-ray diffraction was used to correlate the strain accommodation of the films to composition. Room temperature ultraviolet B (280 nm–320 nm) photoluminescence intensity increased with increasing In composition, while the Stokes shift remained relatively constant. The data suggest a competition between radiative and non-radiative recombination occurs for carriers, respectively, localized at centers produced by In incorporation and at dislocations produced by strain relaxation.

  14. Morphology and properties of a hybrid organic-inorganic system: Al nanoparticles embedded into CuPc thin film

    SciTech Connect

    Molodtsova, O. V.; Babenkov, S. V.; Aristova, I. M.; Vilkov, O. V.; Aristov, V. Yu.

    2014-04-28

    The evolution of the morphology and the electronic structure of the hybrid organic-inorganic system composed of aluminum nanoparticles (NPs) distributed in an organic semiconductor matrix—copper phthalocyanine (CuPc)—as a function of nominal aluminum content was studied by transmission electron microscopy and by photoemission spectroscopy methods. The aluminum atoms deposited onto the CuPc surface diffuse into the organic matrix and self-assemble to NPs in a well-defined manner with a narrow diameter distribution, which depends on the amount of aluminum that is evaporated onto the CuPc film. We find clear evidence of a charge transfer from Al to CuPc and we have been able to determine the lattice sites where Al ions sit. The finally at high coverage about 64 Å the formation of metallic aluminum overlayer on CuPc thin film takes place.

  15. The in-plane anisotropic magnetic damping of ultrathin epitaxial Co{sub 2}FeAl film

    SciTech Connect

    Qiao, Shuang; Yan, Wei; Nie, Shuaihua; Zhao, Jianhua; Zhang, Xinhui

    2015-08-15

    The in-plane orientation-dependent effective damping of ultrathin Co{sub 2}FeAl film epitaxially grown on GaAs(001) substrate by molecular beam epitaxy (MBE) has been investigated by employing the time-resolved magneto-optical Kerr effect (TR-MOKE) measurements. It is found that the interface-induced uniaxial anisotropy is favorable for precession response and the anisotropy of precession frequency is mainly determined by this uniaxial anisotropy, while the magnetic relaxation time and damping factor exhibit the fourfold anisotropy at high-field regime. The field-independent anisotropic damping factor obtained at high fields indicates that the effective damping shows an intrinsic fourfold anisotropy for the epitaxial Co{sub 2}FeAl thin films.

  16. In situ Crystallization of RF sputtered ITO thin films: A comparison with annealed samples

    SciTech Connect

    John, K. Aijo; Manju, T.

    2014-01-28

    Tin doped Indium Oxide (ITO) is a wide band gap semiconductor with high conductivity and transparency in the visible region of the solar spectrum. One of the most popular and exploited applications of ITO is the realization of the transparent conductive layers needed for the electrodes of light sensitive devices, such as photovoltaic cells. The thermal energy for the crystallization of ITO films is very low (150°C). The crystallization can be achieved by the continuous energetic bombardment of the ions in the sputtering chamber without annealing or substrate heating. The accumulated energy will ensure the thermal energy necessary for the crystallization. With the help of sufficiently high sputtering power and sufficient duration, crystallized ITO films can be produced without annealing. In this report, a comparison of the conductivity and transparency of ITO films under two crystallization conditions ((1) crystallization of the sputtered films by annealing; (2) in situ crystallization of the films by providing high sputtering power and long sputtering duration) will be presented.

  17. [Effects of Temperature on the Preparation of Al/Zn3N2 Thin Films Using Magnetron Reactive Sputtering].

    PubMed

    Feng, Jun-qin; Chen, Jun-fang

    2015-08-01

    The effects of substrate temperature on the plasma active species were investigated by plasma optical emission spectroscopy. With increasing substrate temperature, the characteristic spectroscopy intensity of the first positive series of N2* (B(3)Πg-->A(3)Σu(+)), the second positive N2* (C(3)Πu-->B(3)Πg), the first negative series N2(+)* (B(2)Σu(+)-->X(2)Σg(+)) and Zn* are increased. Due to the substrate temperature, each ion kinetic energy is increased and the collision ionization intensified in the chamber. That leading to plasma ion density increase. These phenomenons's show that the substrate temperature raises in a certain range was conducive to zinc nitride thin films growth. Zn3N2 thin films were prepared on Al films using ion sources-assisted magnetron sputtering deposition method. The degree of crystalline of the films was examined with X-ray diffraction (XRD). The results show that has a dominant peak located at 34.359° in room temperature, which was corresponding to the (321) plane of cubic anti-bixbyite zinc nitride structure (JCPDS Card No35-0762). When the substrate temperature was 100 °C, in addition to the (321) reflection, more diffraction peaks appeared corresponding to the (222), (400) and (600) planes, which were located at 31.756°, 36.620° and 56.612° respectively. When the substrate temperature was 200 °C, in addition to the (321), (222), (400) and (600) reflection, more new diffraction peaks also appeared corresponding to the (411), (332), (431) and (622) planes, which were located at 39.070, 43.179°, 47.004° and 62.561° respectively. These results show the film crystalline increased gradually with raise the substrate temperature. XP-1 profilometer were used to analyze the thickness of the Zn3N2 films. The Zn3N2 films deposited on Al films in mixture gas plasma had a deposition rate of 2.0, 2.2, and 2.7 nm · min(-1). These results indicate that the deposition rate was gradually enhanced as substrate temperature increased

  18. Synthesis and Characterization of Biodegradable Ultrasonicated Films made from Chitosan/al2o3 Polymer Nanocomposites

    NASA Astrophysics Data System (ADS)

    Prakash, B.; Jothirajan, M. A.; Umapathy, S.; Amala, Viji

    Chitosan is a biopolymer which is biodegradable, biocompatible, non toxic and cationic in nature. Due to these interesting properties, it finds advanced applications in sensors, drug delivery vehicle and gene therapy etc., In this present work, the biocompatible Al2O3 Nano particles were embedded into Chitosan Polymer matrix by ultrasonication route. XRD and FTIR studies confirm the presence of Al2O3 nanoparticle in the Chitosan polymer matrix. The morphological, optical, electrical properties of the polymer nano composite films are carried out by employing scanning electron microscopy (SEM), UV- Vis, LCR and Impedance studies.

  19. A comparative study on electrical characteristics of crystalline AlN thin films deposited by ICP and HCPA-sourced atomic layer deposition

    NASA Astrophysics Data System (ADS)

    Altuntas, Halit; Bayrak, Turkan

    2017-03-01

    In this work, we aimed to investigate the effects of two different plasma sources on the electrical properties of low-temperature plasma-assisted atomic layer deposited (PA-ALD) AlN thin films. To compare the electrical properties, 50 nm thick AlN films were grown on p-type Si substrates at 200 °C by using an inductively coupled RF-plasma (ICP) and a stainless steel hollow cathode plasma-assisted (HCPA) ALD systems. Al/AlN/ p-Si metal-insulator-semiconductor (MIS) capacitor devices were fabricated and capacitance versus voltage ( C- V) and current-voltage ( I- V) measurements performed to assess the basic important electrical parameters such as dielectric constant, effective charge density, flat-band voltage, breakdown field, and threshold voltage. In addition, structural properties of the films were presented and compared. The results show that although HCPA-ALD deposited AlN thin films has structurally better and has a lower effective charge density ( N eff ) value than ICP-ALD deposited AlN films, those films have large leakage current, low dielectric constant, and low breakdown field. This situation was attributed to the involvement of Si atoms into the AlN layers during the HCPA-ALD processing leads to additional current path at AlN/Si interface and might impair the electrical properties.

  20. A comparative study on electrical characteristics of crystalline AlN thin films deposited by ICP and HCPA-sourced atomic layer deposition

    NASA Astrophysics Data System (ADS)

    Altuntas, Halit; Bayrak, Turkan

    2016-12-01

    In this work, we aimed to investigate the effects of two different plasma sources on the electrical properties of low-temperature plasma-assisted atomic layer deposited (PA-ALD) AlN thin films. To compare the electrical properties, 50 nm thick AlN films were grown on p-type Si substrates at 200 °C by using an inductively coupled RF-plasma (ICP) and a stainless steel hollow cathode plasma-assisted (HCPA) ALD systems. Al/AlN/p-Si metal-insulator-semiconductor (MIS) capacitor devices were fabricated and capacitance versus voltage (C-V) and current-voltage (I-V) measurements performed to assess the basic important electrical parameters such as dielectric constant, effective charge density, flat-band voltage, breakdown field, and threshold voltage. In addition, structural properties of the films were presented and compared. The results show that although HCPA-ALD deposited AlN thin films has structurally better and has a lower effective charge density (N eff ) value than ICP-ALD deposited AlN films, those films have large leakage current, low dielectric constant, and low breakdown field. This situation was attributed to the involvement of Si atoms into the AlN layers during the HCPA-ALD processing leads to additional current path at AlN/Si interface and might impair the electrical properties.

  1. Extreme-ultraviolet thin-film interference in an Al-Mg-Al multiple-layer transmission filter.

    PubMed

    Seely, John F

    2002-10-01

    Thin-film interference has been observed in the transmittance of a filter consisting of 263.5-nm-thick magnesium with a 32.2-nm-thick aluminum layer on each side. The transmittance, measured by synchrotron radiation, has an oscillatory behavior in the 25-70-nm wavelength range. On the basis of the calculation of the transmittance, the oscillatory behavior results from interference associated with the relatively transmissive magnesium and aluminum layers and the reflection from the oxidized aluminum surface layers. The bandpass performance of magnesium and aluminum layers deposited on a silicon photodiode detector is presented.

  2. Fabrication of nanostructured Al-doped ZnO thin film for methane sensing applications

    NASA Astrophysics Data System (ADS)

    Shafura, A. K.; Sin, N. D. Md.; Azhar, N. E. I.; Saurdi, I.; Uzer, M.; Mamat, M. H.; Shuhaimi, A.; Alrokayan, Salman A. H.; Khan, Haseeb A.; Rusop, M.

    2016-07-01

    CH4 gas sensor was fabricated using spin-coating method of the nanostructured ZnO thin film. Effect of annealing temperature on the electrical and structural properties of the film was investigated. Dense nanostructured ZnO film are obtained at higher annealing temperature. The optimal condition of annealing temperature is 500°C which has conductivity and sensitivity value of 3.3 × 10-3 S/cm and 11.5%, respectively.

  3. Temperature-dependent growth of LaAlO{sub 3} films on YBa{sub 2}Cu{sub 3}O{sub 7} C-axis films for multilayer structures

    SciTech Connect

    Hawley, M.E.; Houlton, R.J.; Raistrick, I.A.; Garzon, F.H.

    1995-01-01

    Fabrication of ultra smooth films, free of micro-shorts, is essential to the development of High Temperature Superconducting (HTS) thin film devices. One such example is a SNS junction consisting of two HTS layers separated by a uniformly smooth continuous barrier material. Other schemes under consideration require multilayer structures of up to 5 - 7 epitaxially grown layers of complex oxide material. Successful fabrication of such devices necessitates understanding the epitaxial growth of polycrystalline oxide films on polycrystalline film templates. Toward this end we have developed a set of deposition parameters that produce high quality epitaxial insulating layers suitable for HTS device applications. All films in this study were grown by off-axis RF magnetron sputter deposition. LaAlO{sub 3} films were deposited over MgO grown YBa{sub 2}Cu{sub 3}O{sub 7} (YBCO) c-axis thin films at temperatures ranging from 200 to 700C and on virgin substrates at 600C. Atomic Force Microscopy, eddy current measurements, and x-ray diffraction techniques were used to monitor the effect of growth conditions on the resulting film crystallinity, nanostructure, and electrical properties. Ex-situ interrupted growth characterization of these materials has yielded new insight into the processes that control the growth mechanism and resulting microstructure. All films were polycrystalline. Below 600C, LaAlO{sub 3} films were not epitaxial while films grown at 650C showed some <200> orientation. The shape of the underlying YBCO film is most clearly evident for the film grown at 400C. Surface roughness depended on the appearance of crystals on the film surface. The superconducting properties of the underlying YBCO film required O{sub 2} annealing prior to deposition of the LaAlO{sub 3} layer.

  4. Synthesis of nano ZnO thin film on Al foil by rf glow discharge plasma and its effect on E. coli and P. aeruginosa

    NASA Astrophysics Data System (ADS)

    Panigrahi, Jagannath; Nayak, Bijan B.; Behera, Debadhyan; Subudhi, Umakanta; Acharya, Bhabani S.

    2012-09-01

    Nano ZnO thin films were deposited on thin Al foils by a rf glow discharge plasma method in which sublimed zinc acetate vapor (precursor) reacted with oxygen plasma inside a low-pressure reactor. The films were microstructurally characterized using XRD, TEM, FESEM, optical reflectance and micro-Raman spectroscopy methods. In view of the good scope of ZnO coating in food packaging, the antibacterial activity in the ZnO thin films was studied by exposing the films to E. coli and P. aeruginosa for up to 8 h. Bacterial cell inhibition of up to 98-99 % was observed in the thin films.

  5. Growth and magnetic anisotropy of thin W(110)/Co films on Al2O3(112¯0)

    NASA Astrophysics Data System (ADS)

    Sellmann, R.; Fritzsche, H.; Maletta, H.; Leiner, V.; Siebrecht, R.

    2001-06-01

    The growth and magnetism of thin W(110)/Co films deposited by molecular beam epitaxy on single-crystal sapphire Al2O3(112¯0) substrates is investigated. Low-energy electron diffraction analysis shows that the Co films grow on the epitaxial W(110) substrate layer with a constant lattice strain up to a Co thickness dCo=20 Å. Pseudomorphic growth is found for the W[11¯0] direction. The thickness-dependent magnetic anisotropy is studied in situ at T=300 K by means of magneto-optical Kerr-effect measurements on a Co wedge-shaped sample prior and after coverage with a Au overlayer. After the coverage the Co wedge reveals a perpendicular magnetic anisotropy for small Co film thickness followed by a spin-reorientation transition from out-of-plane to in-plane alignment of the magnetization vector in the thickness regime 7 Å<=dCo<=9 Å. Spin-dependent neutron reflectivity data provide evidence for a pronounced magnetic anisotropy within the film plane even for relatively thick Co films. The observed decrease of the splitting between spin-up and spin-down reflectivities for decreasing temperature indicates that the spin-reorientation transition of the system W(110)/Co/Au can also be induced thermally.

  6. Influence of temperature on Al/p-CuInAlSe2 thin-film Schottky diodes

    NASA Astrophysics Data System (ADS)

    Parihar, Usha; Ray, Jaymin; Panchal, C. J.; Padha, Naresh

    2016-06-01

    Al/p-CuInAlSe2 Schottky diodes were fabricated using the optimized thin layers of CuInAlSe2 semiconductor. These diodes were used to study their temperature-dependent current-voltage (I-V) and capacitance-voltage (C-V) analysis over a wide range of 233-353 K. Based on these measurements, diode parameters such as ideality factor ( η), barrier height (ϕbo) and series resistance ( R s) were determined from the downward curvature of I-V characteristics using Cheung and Cheung method. The extracted parameters were found to be strongly temperature dependent; ϕbo increases, while η and R s decrease with increasing temperature. This behavior of ϕbo and η with change in temperature has been explained on the basis of barrier inhomogeneities over the MS interface by assuming a Gaussian distribution (GD) of the ϕbo at the interface. GD of barrier height (BH) was confirmed from apparent BH (ϕap) versus q/2 kT plot, and the values of the mean BH and standard deviation (σs) obtained from this plot at zero bias were found to be 1.02 and 0.14 eV, respectively. Also, a modified ln ( {J_{{s}} /T2 } ) - q2 σ_{{s}}2 /2k2 T2 versus q/ kT plot for Al/p-CuInAlSe2 Schottky diodes according to the GD gives ϕbo and Richardson constant ( A ** ) as 1.01 eV and 26 Acm-2 K-2, respectively. The Richardson constant value of 26 Acm-2 K-2 is very close to the theoretical value of 30 Acm-2 K-2. The discrepancy between BHs obtained from I-V and C-V measurements has also been interpreted.

  7. Capping layer-tailored interface magnetic anisotropy in ultrathin Co{sub 2}FeAl films

    SciTech Connect

    Belmeguenai, M. Zighem, F.; Chérif, S. M.; Gabor, M. S. Petrisor, T.; Tiusan, C.

    2015-01-14

    Co{sub 2}FeAl (CFA) thin films of various thicknesses (2 nm ≤ d ≤ 50 nm) have been grown on (001) MgO single crystal substrates and then capped with Cr, V, and Ta. Their magnetic and structural properties have been studied by x-ray diffraction (XRD), vibrating sample magnetometry, and broadband microstrip ferromagnetic resonance (MS-FMR). The XRD revealed that the films are epitaxial with the cubic [001] CFA axis normal to the substrate plane and that the chemical order varies from the B2 phase to the A2 phase when decreasing the thickness. The deduced lattice parameters showed that the Cr-capped films exhibit a larger tetragonal distortion, as compared with the films capped with V or Ta. The presence of magnetic dead layers has been observed in CFA samples capped with V and Ta but not in the case of the Cr-capped ones. The effective magnetization, deduced from the fit of MS-FMR measurements, increases (decreases) linearly with the CFA inverse thickness (1/d) for the Cr-capped (Ta-capped) films while it is constant for the V-capped ones. This allows quantifying the perpendicular surface anisotropy coefficients of −0.46 erg/cm{sup 2} and 0.74 erg/cm{sup 2} for Cr and Ta-capped films, respectively. Moreover, the fourfold and the uniaxial anisotropy fields, measured in these films, showed different trends with a respect to the CFA inverse thickness. This allows inferring that a non-negligible part of the fourfold magnetocrystalline term is of interfacial origin.

  8. Atomic layer deposition (ALD) of TiO2 and Al2O3 thin films on silicon

    NASA Astrophysics Data System (ADS)

    Mitchell, David R. G.; Triani, Gerry; Attard, Darren J.; Finnie, Kim S.; Evans, Peter J.; Barbe, Christophe J.; Bartlett, John R.

    2004-04-01

    The essential features of the ALD process involve sequentially saturating a surface with a (sub)monolayer of reactive species, such as a metal halide, then reacting it with a second species to form the required phase in-situ. Repetition of the reaction sequence allows the desired thickness to be deposited. The self-limiting nature of the reactions ensures excellent conformality, and sequential processing results in exquisite control over film thickness, albeit at rather slow deposition rates, typically <200nm/hr. We have been developing our capability with ALD deposition, to understand the influence of deposition parameters on the nature of TiO2 and Al2O3 films (high and low refractive index respectively), and multilayer stacks thereof. These stacks have potential applications as anti-reflection coatings and optical filters. This paper will explore the evolution of structure in our films as a function of deposition parameters including temperature and substrate surface chemistry. A broad range of techniques have been applied to the study of these films, including cross sectional transmission electron microscopy, spectroscopic ellipsometry, secondary ion mass spectrometry etc. These have enabled a wealth of microstructural and compositional information on the films to be acquired, such as accurate film thickness, composition, crystallization sequence and orientation with respect to the substrate. The ALD method is shown to produce single layer films and multilayer stacks with exceptional uniformity and flatness, and in the case of stacks, chemically abrupt interfaces. We are currently extending this technology to the coating of polymeric substrates.

  9. Merits and Demerits of Transparent Conducting Magnetron Sputtered ZnO:Al, ITO and SnO2:F Thin Films for Solar Cell Applications

    NASA Astrophysics Data System (ADS)

    Das, Rajesh; Das, Himadri Sekhar

    2017-04-01

    Transparent conducting ZnO:Al and indium tin oxide (ITO) thin films were deposited by magnetron sputtering under reactive environment. Both the transparent conducting oxide (TCO) films were exposed intentionally in hydrogen environment at 350 °C calcinations temperature to study the post treated TCO film's opto-electronic, structural as well as surface morphological properties. Electrical resistivity of both ZnO:Al, ITO and SnO2:F films are comparable (order of 10-4 Ω-cm), lowest sheet resistance are 8.5, 3.7 and 4.6 Ω/sq respectively and slightly improved after hydrogen exposure at 350 °C. Optical transmittance and internal texture of hydrogen environment exposed ZnO films remains invariant, but in case of ITO, SnO2:F films optical transmittance deteriorated drastically. Hexagonal wurtzite structure with (002) c-axis orientation is observed for pre- and post-hydrogen exposed ZnO films whereas internal texture as well as crystallographic orientation of ITO and SnO2:F films have significantly changed. Surface grains of ITO films have been significantly enhanced, but no such variations are observed in ZnO surface morphology. ZnO:Al and ITO films show unique plasmonic properties in near infrared transmittance due to free carrier generation in conduction band. Based on surface features/morphology, haze factor and internal texture light scattering mechanism is modeled.

  10. Merits and Demerits of Transparent Conducting Magnetron Sputtered ZnO:Al, ITO and SnO2:F Thin Films for Solar Cell Applications

    NASA Astrophysics Data System (ADS)

    Das, Rajesh; Das, Himadri Sekhar

    2016-06-01

    Transparent conducting ZnO:Al and indium tin oxide (ITO) thin films were deposited by magnetron sputtering under reactive environment. Both the transparent conducting oxide (TCO) films were exposed intentionally in hydrogen environment at 350 °C calcinations temperature to study the post treated TCO film's opto-electronic, structural as well as surface morphological properties. Electrical resistivity of both ZnO:Al, ITO and SnO2:F films are comparable (order of 10-4 Ω-cm), lowest sheet resistance are 8.5, 3.7 and 4.6 Ω/sq respectively and slightly improved after hydrogen exposure at 350 °C. Optical transmittance and internal texture of hydrogen environment exposed ZnO films remains invariant, but in case of ITO, SnO2:F films optical transmittance deteriorated drastically. Hexagonal wurtzite structure with (002) c-axis orientation is observed for pre- and post-hydrogen exposed ZnO films whereas internal texture as well as crystallographic orientation of ITO and SnO2:F films have significantly changed. Surface grains of ITO films have been significantly enhanced, but no such variations are observed in ZnO surface morphology. ZnO:Al and ITO films show unique plasmonic properties in near infrared transmittance due to free carrier generation in conduction band. Based on surface features/morphology, haze factor and internal texture light scattering mechanism is modeled.

  11. A photochemical proposal for the preparation of ZnAl{sub 2}O{sub 4} and MgAl{sub 2}O{sub 4} thin films from β-diketonate complex precursors

    SciTech Connect

    Cabello, G.; Lillo, L.; Caro, C.; Seguel, M.; Sandoval, C.; Buono-Core, G.E.; Chornik, B.; Flores, M.

    2016-05-15

    Highlights: • ZnAl{sub 2}O{sub 4} and MgAl{sub 2}O{sub 4} thin films were prepared by photo-chemical method. • The Zn(II), Mg(II) and Al(III) β-diketonate complexes were used as precursors. • The photochemical reaction was monitored by UV–vis and FT-IR spectroscopy. • The results reveal spinel oxide formation and the generation of intermediate products. - Abstract: ZnAl{sub 2}O{sub 4} and MgAl{sub 2}O{sub 4} thin films were grown on Si(100) and quartz plate substrates using a photochemical method in the solid phase with thin films of β-diketonate complexes as the precursors. The films were deposited by spin-coating and subsequently photolyzed at room temperature using 254 nm UV light. The photolysis of these films results in the deposition of metal oxide thin films and fragmentation of the ligands from the coordination sphere of the complexes. The obtained samples were post-annealed at different temperatures (350–1100 °C) for 2 h and characterized by FT-Infrared spectroscopy, X-ray diffraction (XRD), X-ray photoelectron spectroscopy (XPS), atomic force miscroscopy (AFM), and UV–vis spectroscopy. The results indicate the formation of spinel-type structures and other phases. These characteristics determined the quality of the films, which were obtained from the photodeposition of ternary metal oxides.

  12. Comparison on the interaction of Al3+/nano-Al13 with calf thymus DNA /salmon sperm DNA

    NASA Astrophysics Data System (ADS)

    Ma, Fei; Ma, Yue; Du, Changwen; Yang, Xiaodi; Shen, Renfang

    2015-11-01

    The conformation change, binding mode and binding site between Al3+/nano-Al13 and calf thymus DNA/salmon sperm DNA were investigated by UV-vis absorption, FTIR spectra, Raman spectroscopy and CD spectra, as well as melting curves measurement. The UV-vis spectra and circular dichroism spectra results suggested that the phosphate group structure was changed when Al3+ interacted with DNA, while the double-helix was distorted when nano-Al13 interacted with DNA. The FTIR and Raman spectroscopy revealed that the binding sites were Al3+ … PO2, Al3+ … N7/guanine PO2 … Al13 … N7-C8/guanine with calf thymus DNA, and Al3+ … N3-O2/cytosine, Al3+ … N7-C8/guanine, PO2 … Al13 … N7-C8/guanine, PO2 … Al13 … N1/adenine with salmon sperm DNA, respectively. The electrostatic binding was existed between Al3+ and DNA, and the electrostatic binding and complexing were found between nano-Al13 and DNA.

  13. Cracking and decohesion of a thin Al{sub 2}O{sub 3} film on a ductile Al-5%Mg substrate

    SciTech Connect

    Xie Changjin; Tong Wei . E-mail: wei.tong@yale.edu

    2005-01-10

    A ductile metal substrate (1 mm thick Al-5%Mg) with a brittle thin film coating (0.1 {mu}m thick Al{sub 2}O{sub 3}) was quasi-statically stretched to induce an array of parallel cracks in the coating. Additional cracking, decohesion, and buckling of the coating with increasing straining were observed using optical, scanning electron, and atomic force microscopes. The number of cracks per unit axial distance and the average opening gap of each crack were found to increase with increasing axial strain. A 2D finite element analysis incorporating a cohesive interface model of cracked coating segments was carried out to obtain both the normal stress distribution in coating segments with various widths and the shear stress distribution along coating-substrate interfaces. Both the fracture strength of the coating and the shear strength of the interface were estimated. Several theoretical analyses appeared in the literature on the cracking and decohesion of thin film coatings were critically discussed.

  14. Magnetic and structural properties of Fe87Pt13-Al2O3 composite thin films synthesized by solid-state reactions

    NASA Astrophysics Data System (ADS)

    Zhigalov, V. S.; Myagkov, V. G.; Bykova, L. E.; Bondarenko, G. N.; Matsynin, A. A.; Volochaev, M. N.

    2017-02-01

    The structural and magnetic properties of Fe87Pt13 films synthesized by solid-state reactions and Fe87Pt13-Al2O3 composite films fabricated by aluminothermy are investigated. It is shown that the synthesized samples of both types are characterized by the rotational magnetic anisotropy, when the easy magnetization axis in the film plane can be set by a magnetic field. It is established that the value of rotational magnetic anisotropy in the Fe87Pt13-Al2O3 composite films is higher than in the Fe87Pt13 samples by an order of magnitude. The rotational magnetic anisotropy is assumed to be caused by the exchange coupling of the L10-FePt phase with the L12-Fe3Pt phase in the Fe87Pt13 films and magnetic iron oxides in the Fe87Pt13-Al2O3 samples.

  15. Effects of Annealing Ambient on the Characteristics of LaAlO3 Films Grown by Atomic Layer Deposition.

    PubMed

    Zhao, Lu; Liu, Hong-Xia; Wang, Xing; Fei, Chen-Xi; Feng, Xing-Yao; Wang, Yong-Te

    2017-12-01

    We investigated the effects of different annealing ambients on the physical and electrical properties of LaAlO3 films grown by atomic layer deposition. Post-grown rapid thermal annealing (RTA) was carried out at 600 °C for 1 min in vacuum, N2, and O2, respectively. It was found that the chemical bonding states at the interfacial layers (ILs) between LaAlO3 films and Si substrate were affected by the different annealing ambients. The formation of IL was enhanced during the RTA process, resulting in the decrease of accumulation capacitance, especially in O2 ambient. Furthermore, based on the capacitance-voltage characteristics of LaAlO3/Si MIS capacitors, positive V FB shifting tendency could be observed, indicating the decrease of positive oxide charges. Meanwhile, both trapped charge density and interface trap density showed decreased trends after annealing treatments. In addition, RTA process in various gaseous ambients can reduce the gate leakage current due to the enhancement of valence band offset and the reduction of defects in the LaAlO3/Si structure in varying degrees.

  16. Effects of Annealing Ambient on the Characteristics of LaAlO3 Films Grown by Atomic Layer Deposition

    NASA Astrophysics Data System (ADS)

    Zhao, Lu; Liu, Hong-xia; Wang, Xing; Fei, Chen-xi; Feng, Xing-yao; Wang, Yong-te

    2017-02-01

    We investigated the effects of different annealing ambients on the physical and electrical properties of LaAlO3 films grown by atomic layer deposition. Post-grown rapid thermal annealing (RTA) was carried out at 600 °C for 1 min in vacuum, N2, and O2, respectively. It was found that the chemical bonding states at the interfacial layers (ILs) between LaAlO3 films and Si substrate were affected by the different annealing ambients. The formation of IL was enhanced during the RTA process, resulting in the decrease of accumulation capacitance, especially in O2 ambient. Furthermore, based on the capacitance-voltage characteristics of LaAlO3/Si MIS capacitors, positive V FB shifting tendency could be observed, indicating the decrease of positive oxide charges. Meanwhile, both trapped charge density and interface trap density showed decreased trends after annealing treatments. In addition, RTA process in various gaseous ambients can reduce the gate leakage current due to the enhancement of valence band offset and the reduction of defects in the LaAlO3/Si structure in varying degrees.

  17. Photoelectron spectroscopy study of AlN films grown on n-type 6H-SiC by MOCVD

    NASA Astrophysics Data System (ADS)

    Liang, F.; Chen, P.; Zhao, D. G.; Jiang, D. S.; Zhao, Z. J.; Liu, Z. S.; Zhu, J. J.; Yang, J.; Liu, W.; He, X. G.; Li, X. J.; Li, X.; Liu, S. T.; Yang, H.; Liu, J. P.; Zhang, L. Q.; Zhang, Y. T.; Du, G. T.

    2016-09-01

    Photoelectron spectroscopy has been employed to analyze the content and chemical states of the elements on the surface of AlN films with different thickness, which are synthesized by metalorganic chemical vapor deposition on the n-type SiC substrates under low pressure. It is found that, besides the carbon and gallium on the AlN surface, the atom percentage of surface oxygen increases from 4.9 to 8.4, and the electron affinity also increases from 0.36 to 0.97 eV, when the thickness of AlN films increase from 50 to 400 nm. Furthermore, accompanying with the high-resolution XPS spectra of the O 1s, it is speculated that surface oxygen may be the major influence on the electron affinity, where the surface oxygen changes the surface chemical states through replacing N to form Al-O bond and Ga-O bond, although there are also a few of Ga and C contaminations in the chemical sate of Ga-O and C-C, respectively.

  18. An experimental comparison between a novel and a conventional cooling system for the blown film process

    NASA Astrophysics Data System (ADS)

    Janas, M.; Andretzky, M.; Neubert, B.; Kracht, F.; Wortberg, J.

    2016-03-01

    The blown film extrusion is a significant manufacturing process of plastic films. Compared to other extrusion processes, the productivity is limited by the cooling of the extrudate. A conventional cooling system for the blown film application provides the cooling air tangentially, homogeneous over the whole circumference of the bubble, using a single or dual lip cooling ring. In prior works, major effects could be identified that are responsible for a bad heat transfer. Besides the formation of a boundary sublayer on the film surface due to the fast flowing cooling air, there is the interaction between the cooling jet and the ambient air. In order to intensify the cooling of a tubular film, a new cooling approach was developed, called Multi-Jet. This system guides the air vertically on the film surface, using several slit nozzles over the whole tube formation zone. Hence, the jets penetrate the sublayer. To avoid the interaction with the ambient air, the bubble expansion zone is surrounded by a housing. By means of a numeric investigation, the novel cooling approach and the efficiency of the cooling system could be proved. Thereby, a four times higher local heat transfer coefficient is achieved compared to a conventional cooling device. In this paper, the Multi-Jet cooling system is experimentally tested for several different process conditions. To identify a worth considering cooling configuration of the novel cooling system for the experiment, a simulation tool presets the optimal process parameters. The comparison between the results of the new and a conventional system shows that the novel cooling method is able to gain the same frost line height using a 40% lower cooling air volume flow. Due to the housing of the tube formation zone, a heat recovery can be achieved.

  19. SU-E-T-123: Dosimetric Comparison Between Portrait and Landscape Orientations in Radiochromic Film Dosimetry

    SciTech Connect

    Kakinohana, Y; Toita, T; Kasuya, G; Ariga, T; Heianna, J; Murayama, S

    2014-06-01

    Purpose: To compare the dosimetric properties of radiochromic films with different orientation. Methods: A sheet of EBT3 film was cut into eight pieces with the following sizes: 15×15 cm2 (one piece), 5x15 cm{sup 2} (two) and 4×5 cm{sup 2} (five). A set of two EBT3 sheets was used at each dose level. Two sets were used changing the delivered doses (1 and 2 Gy). The 5×15 cm{sup 2} pieces were rotated by 90 degrees in relation to each other, such that one had landscape orientation and the other had portrait orientation. All 5×15 cm2 pieces were irradiated with their long side aligned with the x-axis of the radiation field. The 15×15 cm{sup 2} pieces were irradiated rotated at 90 degrees to each other. Five pieces, (a total of ten from two sheets) were used to obtain a calibration curve. The irradiated films were scanned using an Epson ES-2200 scanner and were analyzed using ImageJ software. In this study, no correction was applied for the nonuniform scanner signal that is evident in the direction of the scanner lamp. Each film piece was scanned both in portrait and landscape orientations. Dosimetric comparisons of the beam profiles were made in terms of the film orientations (portrait and landscape) and scanner bed directions (perpendicular and parallel to the scanner movement). Results: In general, portrait orientation exhibited higher noise than landscape and was adversely affected to a great extent by the nonuniformity in the direction of the scanner lamp. A significant difference in the measured field widths between the perpendicular and parallel directions was found for both orientations. Conclusion: Without correction for the nonuniform scanner signal in the direction of the scanner lamp, a landscape orientation is preferable. A more detailed investigation is planned to evaluate quantitatively the effect of orientation on the dosimetric properties of a film.

  20. Hydrophobicity enhancement of Al2O3 thin films deposited on polymeric substrates by atomic layer deposition with perfluoropropane plasma treatment

    NASA Astrophysics Data System (ADS)

    Ali, Kamran; Choi, Kyung-Hyun; Kim, Chang Young; Doh, Yang Hoi; Jo, Jeongdai

    2014-06-01

    The optoelectronics devices such as organic light emitting diodes are greatly vulnerable to moisture, which reduces their functionality and life cycle. The Al2O3 thin films are mostly used as barrier coatings in such electronic devices to protect them from water vapors. The performance of the Al2O3 barrier films can be improved by enhancing their hydrophobicity. Greater the hydrophobicity of the barrier films, greater will be their protection against water vapors. This paper reports on the enhancement of hydrophobicity of Al2O3 thin films through perfluoropropane (C3F8) plasma treatment. Firstly, good quality Al2O3 films have been fabricated through atomic layer deposition (ALD) on polyethylene naphthalate (PEN) substrates at different temperatures. The fabricated films are then plasma treated with C3F8 to enhance their hydrophobicity. Hydrophobic Al2O3 thin films have shown good morphological and optical properties. Low average arithmetic roughness (Ra) of 1.90 nm, 0.93 nm and 0.88 nm have been recorded for the C3F8 plasma treated films deposited at room temperature (RT), 50 °C and 150 °C, respectively. Optical transmittance of more than 90% has been achieved for the C3F8 plasma treated films grown at 50 °C and 150 °C. The contact angle has been increased from 48° ± 3 to 158° ± 3 for the films deposited at RT and increased from 41° ± 3 to 148° ± 3 for the films deposited at 150 °C.

  1. Slow charge recombination in dye-sensitised solar cells (DSSC) using Al2O3 coated nanoporous TiO2 films.

    PubMed

    Palomares, Emilio; Clifford, John N; Haque, Saif A; Lutz, Thierry; Durrant, James R

    2002-07-21

    The conformal growth of an overlayer of Al2O3 on a nanocrystalline TiO2 film is shown to result in a 4-fold retardation of interfacial charge recombination, and a 30% improvement in photovoltaic device efficiency.

  2. Research and analysis on the thin films sputtered by the Ba-Al-S:Eu target fabricated by powder sintering

    NASA Astrophysics Data System (ADS)

    Zhang, Dongpu; Xu, Fang; Yu, Zhinong; Xue, Wei

    2014-11-01

    Europium-doped barium thioaluminate (BaAl2S4:Eu) is currently the most efficient blue phosphor for inorganic thin film electroluminescent (iEL) device. To produce the full-color EL device, several kinds of blue-emitting layer were attempted and tested. As a key point of blue-emitting layer fabrication, single target sputtering deposition is an effective method. In this work, new structural target is introduced and the fabricated process is expatiated. The PL spectra of as fabricated targets show that both of two, 3mol% and 5mol% europium-doped, have blue emitting property. According to the PL spectra excited by 290nm, 300nm and 320nm ultraviolet, emission peaks located in the region near 470nm. So the as-fabricated targets can be used in single target sputtering deposition on thin film of BaAl2S4:Eu. XRD pattern indicates that there are 4 different phases, barium tetraaluminum sulfide (BaAl4S7), barium sulfide (BaS), europium sulfide (EuS) and barium aluminum oxide (BaAl2O4), in target 1. Besides these four compounds, other two phases, aluminum sulfide (Al2S3) and barium thioaluminate (BaAl2S4), are detected in target 2. Considering the analysis results, especially the hydrolyzation of Al2S3, target 1 is more suitable for sputtering deposition of BaAl2S4:Eu thin film. XPS and X-ray Fluorescence patterns describe the precise molar ratio of each element. In target 1 the relative atom concentration of barium, aluminum, sulfur and oxygen can be calculated from the pattern and molar ratio is about 9:33:41:17. Molar ratio of barium and europium is about 1:0.03. In short, the barium thioaluminate doped by europium sputtering target 1 is better to be applied in the fabrication of blue-emitting layer in inorganic electro-luminescent devices.

  3. An ultrathin, smooth, and low-loss Al-doped Ag film and its application as a transparent electrode in organic photovoltaics.

    PubMed

    Zhang, Cheng; Zhao, Dewei; Gu, Deen; Kim, Hyunsoo; Ling, Tao; Wu, Yi-Kuei Ryan; Guo, L Jay

    2014-08-27

    An ultrathin, smooth, and low-loss Ag film without a wetting layer is achieved by co-depositing a small amount of Al into Ag. The film can be as thin as 6 nm, with a roughness below 1 nm and excellent mechanical flexibility. Organic photovoltaics that use these thin films as transparent electrode show superior efficiency to their indium tin oxide (ITO) counterparts because of improved photon management.

  4. The effect of dopant concentration on properties of transparent conducting Al-doped ZnO thin films for efficient Cu2ZnSnS4 thin-film solar cells prepared by electrodeposition method

    NASA Astrophysics Data System (ADS)

    Mkawi, E. M.; Ibrahim, K.; Ali, M. K. M.; Farrukh, M. A.; Mohamed, A. S.

    2015-11-01

    Al-doped ZnO (AZO) thin films were potentiostatically deposited on indium tin oxide substrates. The influence of the doping level of the ZnO:Al films was investigated. The results of the X-ray diffraction and scanning electron microscopy analysis revealed that the structural properties of the AZO films were found polycrystalline with a hexagonal wurtzite-type structure along the (002) plane. The grain size of the AZO films was observed as approximately 3 μm in the film doping with 4 mol% ZnO:Al concentration. The thin films also exhibited an optical transmittance as high as 90 % in the wavelength range of 100-1,000 nm. The optical band gap increased from 3.33 to 3.45 eV. Based on the Hall studies, the lowest resistivity (4.78 × 10-3 Ω cm) was observed in the film doping with 3 mol% ZnO:Al concentration. The sheet resistant, carrier concentration and Hall mobility values were found as 10.78 Ω/ square, 9.03 × 1018 cm-3 and 22.01 cm2/v s, respectively, which showed improvements in the properties of AZO thin films. The ZnO:Al thin films were used as a buffer layer in thin-film solar cells with the structure of soda-lime glass/Mo/Cu2ZnSnS4/ZnS/ZnO/Al grid. The best solar cell efficiency was 2.3 % with V OC of 0.430 V, J SC of 8.24 mA cm-2 and FF of 68.1 %.

  5. The effect of deposition power on the electrical properties of Al-doped zinc oxide thin films

    SciTech Connect

    Chun, B. S.; Choi, Daniel S.; Wu, H. C.; Shvets, I. V.; Abid, M.; Chu, I. C.; Serrano-Guisan, S.

    2010-08-23

    We investigated the effect on the electronic properties of aluminum (Al)-zinc oxide (ZnO) films by modulating the radio frequency sputtering power. Our experimental results show that increasing the sputtering power increases the Al doping concentration, decreases the resistivity, and also shifts the Zn 2p and O 1s to higher binding energy states. Our local-density approximation (LDA) and LDA+U calculations show that the shift in higher binding energy and resistivity decrease are due to an enhancement of the O 2p-Zn 3d coupling and the modification of the Zn 4s-O 2p interaction in ZnO induced by Al doping.

  6. A Comparison of Radiographic Film Densitometry Using a New Computerized Tool with a Digital Densitometer

    PubMed Central

    Fakhar, Hoorieh Bashizadeh; Razavi, Elham Sadat Emadian; Soheilifar, Sepideh; Kharazifard, Mohammad Javad

    2016-01-01

    Objectives: The purpose of this study was to develop and test a new tool for radiographic densitometry by combining periapical films and aluminum step wedge. Materials and Methods: We reviewed 50 Kodak E-speed intraoral films. An aluminum step wedge consisting of 16 steps was constructed. Each step was 1mm×3m×10mm. The step wedge was exposed to varying exposure times, ranging from 0.05 second to 0.5 second, increasing in 0.05 second increments. Films were digitalized after processing and the MATLAB software algorithm was ran subsequently. Density of the films was measured again using a digital densitometer. In order to compare the two imaging techniques, three steps were selected. Output data from the MATLAB algorithm were compared with data obtained from the digital densitometer. Results: The new method could detect significant differences between subsequent exposure times in step 7, while the densitometer did that in steps 7 and 12. The new method’s sensitivity in determining density changes was 5.26%, 84.1% and 93.02% in steps 2, 7, and 12 respectively. Conclusions: Our new method has an acceptable sensitivity for determining density changes of at least 7 mmEq/Al. PMID:28127317

  7. Comparison of Two Types of Overoxidized PEDOT Films and Their Application in Sensor Fabrication

    PubMed Central

    Hui, Yun; Bian, Chao; Wang, Jinfen; Tong, Jianhua; Xia, Shanhong

    2017-01-01

    Poly(3,4-ethylenedioxythiophene) (PEDOT) films were prepared by electro-oxidation on Au microelectrodes in an aqueous solution. Electrolyte solutions and polymerization parameters were optimized prior to overoxidation. The effect of overoxidation time has been optimized by cyclic voltammetry (CV) and electrochemical impedance spectroscopy (EIS), which results in the film overoxidized for 45 s at 1.35 V presenting a strong adsorption. The other one-step overoxidation film prepared by direct CV ranging from −0.6 V to 1.35 V was polymerized for comparison. Scanning electron microscope (SEM) analysis and Fourier transform infrared (FTIR) spectroscopy were used for monitoring morphological changes and the evolution of functional groups. Both of them indicate increased abundant oxygen functional groups and roughness, yet the products exhibit dendritic morphology and piles of spherical protrusions, respectively. Moreover, double-step overoxidized film showed better electrochemical performance toward lead ion sensing. These characterizations highlight some novel properties that may be beneficial for specific sensing applications. PMID:28335500

  8. Dose comparison between screen/film and full-field digital mammography.

    PubMed

    Gennaro, Gisella; di Maggio, Cosimo

    2006-11-01

    The study purpose was the comparison between doses delivered by a full-field digital mammography system and a screen/film mammography unit, both using the same type of X-ray tube. Exposure parameters and breast thickness were collected for 300 screen/film (GE Senographe DMR) and 296 digital mammograms (GE Senographe 2000D). The entrance surface air kerma (ESAK) was calculated from anode/filter combination, kV(p) and mAs values and breast thickness, by simulating spectra through a program based on a catalogue of experimental X-ray spectra. The average glandular dose (AGD) was also computed. Results showed an overall reduction of average glandular dose by 27% of digital over screen/film mammography. The dose saving was about 15% for thin and thick breasts, while it was between 30% and 40% for intermediate thicknesses. Full-field digital mammography dose reduction is allowed by wider dynamic range and higher efficiency of digital detector, which can be exposed at higher energy spectra than screen/film mammography, and by the separation between acquisition and displaying processes.

  9. A comparison of an Agfa and Kodak film-screen combination for mammography.

    PubMed

    Dudson, J

    1994-12-01

    A recently introduced Agfa film-screen combination used for mammography was compared with a widely used Kodak film-screen combination. This comparison involved evaluating the image quality and calculating a reference mean glandular dose for a breast phantom recommended by the ACPSEM. The image quality and dose were evaluated for a grid and non-grid technique as well as a range of kilovoltages. For the large area test objects in the phantom, the Agfa combination performed better. This reflected the high contrast capability of this film-screen combination. For the Kodak combination a better image score was achieved for the small area objects. These objects are indicative of the modulation transfer function and resolution characteristics of the film-screen combination. The reference mean glandular dose showed that at least 20% less dose was required for the Agfa combination. Although the Agfa combination offered improved contrast and dose saving, the Kodak combination was preferred because of the better representation of the small area objects which are an important element for early detection of breast cancer.

  10. The mechanism of electromigration failure of narrow Al-2Cu-1Si thin-film interconnects

    SciTech Connect

    Kim, C.; Morris, J.W. Jr. )

    1993-05-15

    This work is principally concerned with the microstructure of electromigration failure in narrow Al-2Cu-1Si conducting lines on Si. Samples were patterned from 0.5-[mu]m-thick vapor-deposited films with mean grain size of 2.4 [mu]m, and had linewidths of 1.3 [mu]m ([ital W]/[ital G][approx]0.5), 2 [mu]m ([ital W]/[ital G][approx]0.8), and 6 [mu]m ([ital W]/[ital G][approx]2.5). The lines were tested to failure at [ital T]=226 [degree]C and [ital j]=2.5[times]10[sup 6] A/cm[sup 2]. Other samples were tested over a range of substrate temperatures and current densities to test the effect of these variables, and 1.3 [mu]m lines were tested after preaging at 226 [degree]C for various times to change the Cu-precipitate distribution prior to testing. Three failure modes were observed: The 6 [mu]m specimens failed by separation along grain boundaries with an apparent activation energy of 0.65 eV; the 1.3 [mu]m specimens that were preaged for 24 h failed after very long times by gradual thinning to rupture; all other narrow lines failed by the transgranular-slit mechanism with an activation energy near 0.93 eV. Microstructural studies suggest that the transgranular-slit failure mechanism is due to the accumulation of a supersaturation of vacancies in the bamboo grains that terminate polygranular segments in the line. Failure occurs after Cu has been swept from the grain that fails. Failure happens first at the end of the longest polygranular segment of the line, at a time that decreases exponentially with the polygranular segment length. Preaging the line to create a more stable distribution of Cu lengthens the time required to sweep Cu from the longest polygranular segment, and significantly increases the time to failure. In the optimal case the transgranular-slit failure mechanism is suppressed, and the bamboo grain fails by diffuse thinning to rupture.

  11. Growth and patterning of laser ablated superconducting YBa2Cu3O7 films on LaAlO3 substrates

    NASA Astrophysics Data System (ADS)

    Warner, J. D.; Bhasin, K. B.; Varaljay, N. C.; Bohman, D. Y.; Chorey, C. M.

    A high quality superconducting film on a substrate with a low dielectric constant is desired for passive microwave circuit applications. In addition, it is essential that the patterning process does not effect the superconducting properties of the thin films to achieve the highest circuit operating temperatures. YBa2Cu3O7 superconducting films were grown on lanthanum aluminate substrates using laser ablation with resulting maximum transition temperature (T sub c) of 90 K. The films were grown on a LaAlO3 which was at 775 C and in 170 mtorr of oxygen and slowly cooled to room temperature in 1 atm of oxygen. These films were then processed using photolithography and a negative photoresist with an etch solution of bromine and ethanol. Results are presented on the effect of the processing on T(sub c) of the film and the microwave properties of the patterned films.

  12. Misfit Strain Relaxation of Ferroelectric PbTiO3/LaAlO3 (111) Thin Film System

    PubMed Central

    Xu, Y. B.; Tang, Y. L.; Zhu, Y. L.; Liu, Y.; Li, S.; Zhang, S. R.; Ma, X. L.

    2016-01-01

    Ferroelectric thin films grown on high index substrates show unusual structural and switching dynamics due to their special strain states. Understanding the misfit relaxation behavior is crucial to facilitate the high index thin film growth with improved quality. In this paper, ferroelectric PbTiO3 thin films were grown on LaAlO3 (111) substrates by pulsed laser deposition technique. The microstructures were investigated by combinations of conventional and aberration-corrected transmission electron microscopy. Diffraction contrast analysis and high resolution imaging reveal that high density interfacial dislocations were distributed at the interfaces. These dislocations have mixed character with Burgers vectors of a <110> and line directions of <112>. The edge components of the dislocations, with the Burgers vectors parallel to the interface, accommodate the lattice mismatch and are the main contributor to the misfit relaxation of this system. The formation mechanism of these dislocations is proposed and discussed to elucidate the novel mismatch relaxation behavior of <111> oriented perovskite films. PMID:27725752

  13. Misfit Strain Relaxation of Ferroelectric PbTiO3/LaAlO3 (111) Thin Film System

    NASA Astrophysics Data System (ADS)

    Xu, Y. B.; Tang, Y. L.; Zhu, Y. L.; Liu, Y.; Li, S.; Zhang, S. R.; Ma, X. L.

    2016-10-01

    Ferroelectric thin films grown on high index substrates show unusual structural and switching dynamics due to their special strain states. Understanding the misfit relaxation behavior is crucial to facilitate the high index thin film growth with improved quality. In this paper, ferroelectric PbTiO3 thin films were grown on LaAlO3 (111) substrates by pulsed laser deposition technique. The microstructures were investigated by combinations of conventional and aberration-corrected transmission electron microscopy. Diffraction contrast analysis and high resolution imaging reveal that high density interfacial dislocations were distributed at the interfaces. These dislocations have mixed character with Burgers vectors of a <110> and line directions of <112>. The edge components of the dislocations, with the Burgers vectors parallel to the interface, accommodate the lattice mismatch and are the main contributor to the misfit relaxation of this system. The formation mechanism of these dislocations is proposed and discussed to elucidate the novel mismatch relaxation behavior of <111> oriented perovskite films.

  14. Physical mechanism of the Schwarzschild effect in film dosimetry—theoretical model and comparison with experiments

    NASA Astrophysics Data System (ADS)

    Djouguela, A.; Kollhoff, R.; Rühmann, A.; Willborn, K. C.; Harder, D.; Poppe, B.

    2006-09-01

    In consideration of the importance of film dosimetry for the dosimetric verification of IMRT treatment plans, the Schwarzschild effect or failure of the reciprocity law, i.e. the reduction of the net optical density under 'protraction' or 'fractionation' conditions at constant dose, has been experimentally studied for Kodak XOMAT-V (Martens et al 2002 Phys. Med. Biol. 47 2221-34) and EDR 2 dosimetry films (Djouguela et al 2005 Phys. Med. Biol. 50 N317-N321). It is known that this effect results from the competition between two solid-state physics reactions involved in the latent-image formation of the AgBr crystals, the aggregation of two Ag atoms freshly formed from Ag+ ions near radiation-induced occupied electron traps and the spontaneous decomposition of the Ag atoms. In this paper, we are developing a mathematical model of this mechanism which shows that the interplay of the mean lifetime τ of the Ag atoms with the time pattern of the irradiation determines the magnitude of the observed effects of the temporal dose distribution on the net optical density. By comparing this theory with our previous protraction experiments and recent fractionation experiments in which the duration of the pause between fractions was varied, a value of the time constant τ of roughly 10 s at room temperature has been determined for EDR 2. The numerical magnitude of the Schwarzschild effect in dosimetry films under the conditions generally met in radiotherapy amounts to only a few per cent of the net optical density (net OD), so that it can frequently be neglected from the viewpoint of clinical applications. But knowledge of the solid-state physical mechanism and a description in terms of a mathematical model involving a typical time constant of about 10 s are now available to estimate the magnitude of the effect should the necessity arise, i.e. in cases of large fluctuations of the temporal pattern of film exposure.

  15. Investigation of diagnostic and image quality attributes: comparison of screen-film to CR mammography

    NASA Astrophysics Data System (ADS)

    Fletcher-Heath, Lynn; Richards, Anne; Ryan-Kron, Susan

    2006-03-01

    Digital mammography is advancing into an arena where analog has long been the gold standard. Direct digital systems may not be the favored solution for a particular site while computed radiography (CR) mammography, remains unproven worldwide. This pilot study responds to the growing desire to acquire and display digital mammographic images by exploring the acceptability of CR mammography. Images representing a range of breast tissue types were collected from 49 subjects (17 screening; 32 diagnostic) at four clinical sites. Comparison views were collected on the same breast, under the same compression, using automatic exposure control on state-of-the-art film systems followed by CR. CR images were processed and printed to a mammography printer for hard copy feature comparison. Each image pair in the study was evaluated according to 13 image quality attributes covering noise, contrast, sharpness, and image quality in the overall captured images as well as in each of several particular breast regions (periphery and skin-line, parenchyma and fatty tissue). A rating scale from 1 to 5 was used (strong preference for film=1, strong preference for CR=5). Twelve experienced mammographers at four clinical sites scored a subset of the 49 cases for a total of 64 image pair readings. There were 64 ratings for each of 13 image quality attributes for all cases and, an additional series of scores (four or five attribute ratings) for each abnormality in the category of mass, architectural distortion and microcalcification, for a total of 1069 scores. Based on the pilot study results, it was suggested that CR was equivalent or preferred to conventional screen-film for overall image quality (38% scored 3; 46% scored >3), image contrast (27% scored 3; 59% scored >3) and sharpness (28% scored 3; 50% scored >3). No preference was found when assessing noise. This pilot study also suggested that diagnostic quality was maintained in assessing abnormalities for attributes necessary to

  16. Electronic structure of AlCrN films investigated using various photoelectron spectroscopies and ab initio calculations

    NASA Astrophysics Data System (ADS)

    Tatemizo, N.; Imada, S.; Miura, Y.; Yamane, H.; Tanaka, K.

    2017-03-01

    The valence band (VB) structures of wurtzite AlCrN (Cr concentration: 0-17.1%), which show optical absorption in the ultraviolet-visible-infrared light region, were investigated via photoelectron yield spectroscopy (PYS), x-ray/ultraviolet photoelectron spectroscopy (XPS/UPS), and ab initio density of states (DOS) calculations. An obvious photoelectron emission threshold was observed ~5.3 eV from the vacuum level for AlCrN, whereas no emission was observed for AlN in the PYS spectra. Comparisons of XPS and UPS VB spectra and the calculated DOS imply that Cr 3d states are formed both at the top of the VB and in the AlN gap. These data suggest that Cr doping could be a viable option to produce new materials with relevant energy band structures for solar photoelectric conversion.

  17. Diode-like behavior of I-V curves of CoFe-(Al-O)/Si(100) granular thin films

    NASA Astrophysics Data System (ADS)

    Tuan Anh, Nguyen; Van Cuong, Giap; Anh Tuan, Nguyen

    2015-01-01

    In this study, the electrical performance of (Co70Fe30)x(Al-O)1-x (where x=0.1 and 0.3) granular thin films sputtered on Si(1 0 0) substrates, which were subsequently annealing at 350 °C for 1 h in vacuum, was investigated. The millimeter-sized samples were installed in an in-plane lateral Ag electrode configuration on the surface. The current-voltage (I-V) characteristics were measured in bias voltages of approximately ±7 V. The I-V curves demonstrated the so-called large Coulomb gaps and diode-like asymmetric behavior similar to a Zener diode-type rectification. This remarkable behavior was evaluated using the most suitable transport models. Results suggest that an effective magnetic diode could be fabricated from millimeter-sized magnetic granular thin films.

  18. Interfacial Dzyaloshinskii-Moriya interaction in perpendicularly magnetized Pt/Co/AlOx ultrathin films measured by Brillouin light spectroscopy

    NASA Astrophysics Data System (ADS)

    Belmeguenai, Mohamed; Adam, Jean-Paul; Roussigné, Yves; Eimer, Sylvain; Devolder, Thibaut; Kim, Joo-Von; Cherif, Salim Mourad; Stashkevich, Andrey; Thiaville, André

    2015-05-01

    Spin waves in perpendicularly magnetized Pt/Co/AlOx/Pt ultrathin films with varying Co thicknesses (0.6-1.2 nm) have been studied with Brillouin light spectroscopy in the Damon-Eshbach geometry. The measurements reveal a pronounced nonreciprocal propagation, which increases with decreasing Co thickness. This nonreciprocity, attributed to an interfacial Dzyaloshinskii-Moriya interaction (DMI), is significantly stronger than asymmetries resulting from surface anisotropies for such modes. Results are consistent with an interfacial DMI constant Ds=-1.7 ±0.11 pJ /m, which favors left-handed chiral spin structures. This suggests that such films below 1 nm in thickness should support chiral states such as skyrmions at room temperature.

  19. Nucleation dynamics of nanostructural TiO2 films with controllable phases on (001) LaAlO3.

    PubMed

    Lin, Yuan; Zeng, Bo; Ji, Yanda; Liang, Weizheng; Feng, Dayu; Gao, Min; Zhang, Yin; Chen, Xinxin; Chen, Bin; Chen, Chonglin

    2014-01-10

    Microstructure evolution and nucleation dynamics of TiO2 nanostructural thin films on (001) LaAlO3 substrates grown by the polymer-assisted deposition technique have been systematically studied with the increase of annealing temperature. Epitaxial anatase TiO2 phase with nanometer-scaled periodic surface strip patterns can be achieved when the sample is annealed at 900 ° C. It is also found that the morphology of the surface pattern is related to the ramping rate of the temperature during annealing. The formation of the surface strip pattern can be considered to be associated with the diffusion limit growth dynamics. The surface pattern structure was found to strongly affect the hydrophilic properties of the thin films.

  20. Synthesis of nanostructured palladium films on porous {alpha}-Al{sub 2}O{sub 3} substrates

    SciTech Connect

    Guo Ruijie; Zhang Baoquan Liu Xiufeng

    2008-01-08

    The lamellar lyotropic liquid crystalline phases of Brij56 nonionic surfactants were used to template the deposition of nanostructured palladium films on {alpha}-Al{sub 2}O{sub 3} substrates. The reaction between hydrazine hydrate and Pd{sup 2+} dissolved within the aqueous domains of the liquid crystalline phase generated the nanostructured palladium. The X-ray diffraction (XRD), scanning electron microscopy (SEM) and transmission election microscopy (TEM) studies indicated that the resulting films possessed regular arrays of channels with periodicity of 1 nm, which was obviously smaller than that of the templates. The size mismatch might arise from the discharge of nitrogen during the reaction and the relatively low Pd{sup 2+} concentrations.

  1. Static and dynamic magnetic properties of epitaxial Co{sub 2}FeAl Heusler alloy thin films

    SciTech Connect

    Ortiz, G.; Gabor, M. S.; Petrisor, T. Jr.; Boust, F.; Issac, F.; Tiusan, C.; Hehn, M.; Bobo, J. F.

    2011-04-01

    Structural and magnetic properties of epitaxial Co{sub 2}FeAl Heusler alloy thin films were investigated. Films were deposited on single crystal MgO (001XS) substrates at room temperature, followed by an annealing process at 600 deg. C. MgO and Cr buffer layers were introduced in order to enhance crystalline quality, and improve magnetic properties. Structural analyses indicate that samples have grown in the B2 ordered epitaxial structure. VSM measures show that the MgO buffered sample displays a magnetization saturation of 1010 {+-} 30 emu/cm{sup 3}, and Cr buffered sample displays a magnetization saturation of 1032 {+-} 40 emu/cm{sup 3}. Damping factor was studied by strip-line ferromagnetic resonance measures. We observed a maximum value for the MgO buffered sample of about 8.5 x 10{sup -3}, and a minimum value of 3.8 x 10{sup -3} for the Cr buffered one.

  2. Combinatorial approach to MgHf co-doped AlN thin films for Vibrational Energy Harvesters

    NASA Astrophysics Data System (ADS)

    Nguyen, H. H.; Oguchi, H.; Kuwano, H.

    2016-11-01

    In this report, we studied MgHf co-doped AlN ((Mg,Hf)xA11-xN) aiming for developing an AlN-based dielectric material with the large piezoelectric coefficient. To rapidly screen the wide range of composition, we applied combinatorial film growth approach. To get continuous composition gradient on a single substrate, films were deposited on Si (100) substrates by sputtering AlN and Mg-Hf targets simultaneously. Crystal structure was investigated by X-ray diffractometer equipped with a two-dimensional detector (2D-XRD). Composition was determined by Energy Dispersive Spectroscopy (EDS). These studies revealed that we successfully covered the widest ever composition range of 0 < x < 0.24 for this material. In addition, these studies found that we succeeded in realizing largest ever c-axis expansion of 2.7% at x = 0.24, which will lead to the highest enhancement in the piezoelectric coefficient. The results of this study opened the way for high-throughput development of the dielectric materials.

  3. Optical and electrical properties of ZnO nanocrystal thin films passivated by atomic layer deposited Al2O3

    NASA Astrophysics Data System (ADS)

    Choi, Ji-Hyuk; Kim, Jungwoo; Oh, Soong Ju; Kim, Daekyoung; Kim, Yong-Hoon; Chae, Heeyeop; Kim, Hyoungsub

    2016-07-01

    While colloidal semiconductor nanocrystal (NC) is preferred for use in solution-based optoelectronic devices, the large number of surface defects associated with its high surface-to-volume ratio degrades the optimal performance of NC-based devices due to the extensive trapping of free carriers available for charge transport. Here, we studied a simple and effective strategy to control the degree of passivation and doping level of solution-deposited ZnO NC films by infilling with ultra-thin Al2O3 using an atomic layer deposition (ALD) technique. According to various spectroscopic, microstructural, and electrical analyses, the ALD-Al2O3 treatment dramatically reduced the number of surface trap states with high ambient stability while simultaneously supplied excess carriers probably via a remote doping mechanism. As a consequence, the field-effect transistors built using the ZnO NC films with ALD-Al2O3 treatment for an optimal number of cycles exhibited significantly enhanced charge transport.

  4. Engineering the polar magneto-optical Kerr effect in strongly strained L10-MnAl films

    NASA Astrophysics Data System (ADS)

    Zhu, Lijun; Brandt, Liane; Zhao, Jianhua

    2016-10-01

    We report the engineering of the polar magnetooptical (MO) Kerr effect in perpendicularly magnetized L10-MnAl epitaxial films with remarkably tuned magnetization, strain, and structural disorder by varying substrate temperature (T s) during molecular-beam epitaxy growth. The Kerr rotation was enhanced by a factor of up to 5 with T s increasing from 150 to 350 °C as a direct consequence of the improvement of the magnetization. A similar remarkable tuning effect was also observed on the Kerr ellipticity and the magnitude of the complex Kerr angle, while the phase of the complex Kerr angle appears to be independent of the magnetization. The combination of the good semiconductor compatibility, the moderate coercivity of 0.3-8.2 kOe, the tunable polar MO Kerr effect of up to ~0.034°, and giant spin precession frequencies of up to ~180 GHz makes L10-MnAl films a very interesting MO material. Our results give insights into both the microscopic mechanisms of the MO Kerr effect in L10-MnAl alloys and their scientific and technological application potential in the emerging spintronics and ultrafast MO modulators.

  5. Evolution of dielectric function of Al-doped ZnO thin films with thermal annealing: effect of band gap expansion and free-electron absorption.

    PubMed

    Li, X D; Chen, T P; Liu, Y; Leong, K C

    2014-09-22

    Evolution of dielectric function of Al-doped ZnO (AZO) thin films with annealing temperature is observed. It is shown that the evolution is due to the changes in both the band gap and the free-electron absorption as a result of the change of free-electron concentration of the AZO thin films. The change of the electron concentration could be attributed to the activation of Al dopant and the creation/annihilation of the donor-like defects like oxygen vacancy in the thin films caused by annealing.

  6. Epitaxial Nd-doped α-(Al(1-x)Ga(x))2O3 films on sapphire for solid-state waveguide lasers.

    PubMed

    Kumaran, Raveen; Tiedje, Thomas; Webster, Scott E; Penson, Shawn; Li, Wei

    2010-11-15

    Single-crystal aluminum-gallium oxide films have been grown by molecular beam epitaxy in the corundum phase. Films of the (Al(1-x)Ga(x))(2)O(3) alloys doped with neodymium have favorable properties for solid-state waveguide lasers, including a high-thermal-conductivity sapphire substrate and a dominant emission peak in the 1090-1096 nm wavelength range. The peak position is linearly correlated to the unit cell volume, which is dependent on film composition and stress. Varying the Ga-Al alloy composition during growth will enable the fabrication of graded-index layers for tunable lasing wavelengths and low scattering losses at the interfaces.

  7. Interfacial reaction control and its mechanism of AlN epitaxial films grown on Si(111) substrates by pulsed laser deposition

    PubMed Central

    Wang, Wenliang; Yang, Weijia; Liu, Zuolian; Wang, Haiyan; Wen, Lei; Li, Guoqiang

    2015-01-01

    High-quality AlN epitaxial films have been grown on Si substrates by pulsed laser deposition (PLD) by effective control of the interfacial reactions between AlN films and Si substrates. The surface morphology, crystalline quality and interfacial property of as-grown AlN/Si hetero-interfaces obtained by PLD have been systemically studied. It is found that the amorphous SiAlN interfacial layer is formed during high temperature growth, which is ascribed to the serious interfacial reactions between Si atoms diffused from the substrates and the AlN plasmas produced by the pulsed laser when ablating the AlN target during the high temperature growth. On the contrary, abrupt and sharp AlN/Si hetero-interfaces can be achieved by effectively controlling the interfacial reactions at suitable growth temperature. The mechanisms for the evolution of interfacial layer from the amorphous SiAlN layer to the abrupt and sharp AlN/Si hetero-interfaces by PLD are hence proposed. This work of obtaining the abrupt interfaces and the flat surfaces for AlN films grown by PLD is of paramount importance for the application of high-quality AlN-based devices on Si substrates. PMID:26089026

  8. Si-rich Al2O3 films grown by RF magnetron sputtering: structural and photoluminescence properties versus annealing treatment

    PubMed Central

    2013-01-01

    Silicon-rich Al2O3 films (Six(Al2O3)1−x) were co-sputtered from two separate silicon and alumina targets onto a long silicon oxide substrate. The effects of different annealing treatments on the structure and light emission of the films versus x were investigated by means of spectroscopic ellipsometry, X-ray diffraction, micro-Raman scattering, and micro-photoluminescence (PL) methods. The formation of amorphous Si clusters upon the deposition process was found for the films with x ≥ 0.38. The annealing treatment of the films at 1,050°C to 1,150°C results in formation of Si nanocrystallites (Si-ncs). It was observed that their size depends on the type of this treatment. The conventional annealing at 1,150°C for 30 min of the samples with x = 0.5 to 0.68 leads to the formation of Si-ncs with the mean size of about 14 nm, whereas rapid thermal annealing of similar samples at 1,050°C for 1 min showed the presence of Si-ncs with sizes of about 5 nm. Two main broad PL bands were observed in the 500- to 900-nm spectral range with peak positions at 575 to 600 nm and 700 to 750 nm accompanied by near-infrared tail. The low-temperature measurement revealed that the intensity of the main PL band did not change with cooling contrary to the behavior expected for quantum confined Si-ncs. Based on the analysis of PL spectrum, it is supposed that the near-infrared PL component originates from the exciton recombination in the Si-ncs. However, the most intense emission in the visible spectral range is due to either defects in matrix or electron states at the Si-nc/matrix interface. PMID:23758885

  9. Al capping layers for nondestructive x-ray photoelectron spectroscopy analyses of transition-metal nitride thin films

    SciTech Connect

    Greczynski, Grzegorz Hultman, Lars; Petrov, Ivan; Greene, J. E.

    2015-09-15

    X-ray photoelectron spectroscopy (XPS) compositional analyses of materials that have been air exposed typically require ion etching in order to remove contaminated surface layers. However, the etching step can lead to changes in sample surface and near-surface compositions due to preferential elemental sputter ejection and forward recoil implantation; this is a particular problem for metal/gas compounds and alloys such as nitrides and oxides. Here, the authors use TiN as a model system and compare XPS analysis results from three sets of polycrystalline TiN/Si(001) films deposited by reactive magnetron sputtering in a separate vacuum chamber. The films are either (1) air-exposed for ≤10 min prior to insertion into the ultrahigh-vacuum (UHV) XPS system; (2) air-exposed and subject to ion etching, using different ion energies and beam incidence angles, in the XPS chamber prior to analysis; or (3) Al-capped in-situ in the deposition system prior to air-exposure and loading into the XPS instrument. The authors show that thin, 1.5–6.0 nm, Al capping layers provide effective barriers to oxidation and contamination of TiN surfaces, thus allowing nondestructive acquisition of high-resolution core-level spectra representative of clean samples, and, hence, correct bonding assignments. The Ti 2p and N 1s satellite features, which are sensitive to ion bombardment, exhibit high intensities comparable to those obtained from single-crystal TiN/MgO(001) films grown and analyzed in-situ in a UHV XPS system and there is no indication of Al/TiN interfacial reactions. XPS-determined N/Ti concentrations acquired from Al/TiN samples agree very well with Rutherford backscattering and elastic recoil analysis results while ion-etched air-exposed samples exhibit strong N loss due to preferential resputtering. The intensities and shapes of the Ti 2p and N 1s core level signals from Al/TiN/Si(001) samples do not change following long-term (up to 70 days) exposure to ambient conditions

  10. Stoichiometry of LaAlO{sub 3} films grown on SrTiO{sub 3} by pulsed laser deposition

    SciTech Connect

    Golalikhani, M.; Lei, Q. Y.; Xi, X. X.; Chen, G.; Spanier, J. E.; Ghassemi, H.; Johnson, C. L.; Taheri, M. L.

    2013-07-14

    We have studied the stoichiometry of epitaxial LaAlO{sub 3} thin films on SrTiO{sub 3} substrate grown by pulsed laser deposition as a function of laser energy density and oxygen pressure during the film growth. Both x-ray diffraction ({theta}-2{theta} scan and reciprocal space mapping) and transmission electron microscopy (geometric phase analysis) revealed a change of lattice constant in the film with the distance from the substrate. Combined with composition analysis using x-ray fluorescence we found that the nominal unit-cell volume expanded when the LaAlO{sub 3} film was La-rich, but remained near the bulk value when the film was La-poor or stoichiometric. La excess was found in all the films deposited in oxygen pressures lower than 10{sup -2} Torr. We conclude that the discussion of LaAlO{sub 3}/SrTiO{sub 3} interfacial properties should include the effects of cation off-stoichiometry in the LaAlO{sub 3} films when the deposition is conducted under low oxygen pressures.

  11. Direct band-gap measurement on epitaxial Co{sub 2}FeAl{sub 0.5}Si{sub 0.5} Heusler-alloy films

    SciTech Connect

    Alhuwaymel, Tariq F.; Carpenter, Robert; Yu, Chris Nga Tung; Kuerbanjiang, Balati; Lazarov, Vlado K.; Abdullah, Ranjdar M.; El-Gomati, Mohamed; Hirohata, Atsufumi

    2015-05-07

    In this study, a newly developed band-gap measurement technique has been used to characterise epitaxial Co{sub 2}FeAl{sub 0.5}Si{sub 0.5} (CFAS) films. The CFAS films were deposited on MgO(001) substrate by ultra high vacuum molecular beam epitaxy. The band-gap for the as deposited films was found to be ∼110 meV when measured at room temperature. This simple technique provides a macroscopic analysis of the half-metallic properties of a thin film. This allows for simple optimisation of growth and annealing conditions.

  12. Effect of Al2O3 encapsulation on multilayer MoSe2 thin-film transistors

    NASA Astrophysics Data System (ADS)

    Lee, Hyun Ah; Yeoul Kim, Seong; Kim, Jiyoung; Choi, Woong

    2017-03-01

    We report the effect of Al2O3 encapsulation on the device performance of multilayer MoSe2 thin-film transistors based on statistical investigation of 29 devices with a SiO2 bottom-gate dielectric. On average, Al2O3 encapsulation by atomic layer deposition increased the field-effect mobility from 10.1 cm2 V‑1 s‑1 to 14.8 cm2 V‑1 s‑1, decreased the on/off-current ratio from 8.5  ×  105 to 2.3  ×  105 and negatively shifted the threshold voltage from  ‑1.1 V to  ‑8.1 V. Calculation based on the Y-function method indicated that the enhancement of intrinsic carrier mobility occurred independently of the reduction of contact resistance after Al2O3 encapsulation. Furthermore, contrary to previous reports in the literature, we observe a negligible effect of thermal annealing on contact resistance and carrier mobility during the atomic layer deposition of Al2O3. These results demonstrate that Al2O3 encapsulation is a useful method for improving the carrier mobility of multilayer MoSe2 transistors, providing important implications on the application of MoSe2 and other 2D materials into high-performance transistors.

  13. Mössbauer spectroscopy study of Al distribution in BaAlxFe12-xO19 thin films

    NASA Astrophysics Data System (ADS)

    Przybylski, M.; Żukrowski, J.; Harward, I.; Celiński, Z.

    2015-05-01

    Barium hexagonal ferrite (BaM) films grown on Si are a good candidate material for new-generations of on-wafer microwave devices operating at frequencies above 40 GHz. Doping BaM with Al increases the value of anisotropy field even more, and in combination with a large value of remanence, would allow one to create a self-biasing material/structure that would eliminate the need for permanent bias magnets in millimeter wave devices. To examine the occupation of Fe sublattices by Al ions, we carried out Conversion Electron Mössbauer Spectroscopy (CEMS) measurements at room temperature and zero magnetic field (after magnetizing the samples in a strong magnetic field). The spectra can be reasonably fitted with three components (sub-spectra) corresponding to different Fe sublattices. There are significant changes in the spectra with the addition of Al: The magnetic hyperfine field decreases for all three components, and their relative contributions also change remarkably. These observations are in agreement with the fact that the Al substitutes Fe, thus lowering the component contributions and the value of the hyperfine field. In addition, our previous XRD analysis indicates increasing grain misalignment with Al content, further supporting the CEMS data.

  14. Synthesis and characterization of structural and optical properties of single crystalline a-TiO2 films on MgAl2O4(111) substrate

    NASA Astrophysics Data System (ADS)

    Xu, Haisheng; Feng, Xianjin; Luan, Caina; Ma, Jin

    2017-01-01

    Anatase phase TiO2 (a-TiO2) films have been deposited on MgAl2O4(111) substrates by the metal organic chemical vapor deposition (MOCVD) method at the substrate temperatures of 500-650°C. The structural analyses showed that the films were highly (004) oriented with tetragonal anatase structure and the epitaxial relationship was given as a-TiO2(004)||MgAl2O4 (111). The sample prepared at 600°C exhibited the best crystallization with a single-crystalline epitaxial film. The average transmittance of every TiO2 film in the visible range exceeded 90% excluding the influence of the substrate. The morphology and composition of the TiO2 films have also been studied in detail.

  15. Thin Film XRF measurements (Wet and dry) of Black Sea Sediment Samples And Their Elemental Comparisons With Same Core U Channel Sample.

    NASA Astrophysics Data System (ADS)

    Acar, Dursun; Eris, Kadir; Sarı, Erol; Genc, S. Can

    2015-04-01

    This paper presents the XRF data from about 0.3mm thin film sediment core. We prepared 3 different model from same sediment core. The main aim is the finding for elemental changing of spectra variety and their comparison with physical changes of samples about mass and water content. Our XRF measurements were carried out by ITRAX (Cox System), and we have documented the some useful and more precision tricks; a) the first point is that the wet or dry nature of the core, b) the second is the use of U channel sample or thin film sample. For base referencing for the selected elements, we prepared normal wet U channel sample with the thickness of 1.5 cm. We used thin material (film) for keeping the humidty of every core sample's surface. Because humidity loss very high on thin film core sample and very effective to get bad results related to changing of topography and beam emission related to loss of pore water. Our XRF measurements have revealed that the Zn, Ti, Si, V,S, Cr, Mn, Ba, K and Ca elements were measured more precisely and accurate using by the dry thin film sample than those of wet U channel and wet thin sediment sample experiments. Beside this, Y, Zr, Nb, Rb, Sr, Ir, Fe,Co, Ni and Al elements were measured from the wet U channeled core more reliable with respect to the former. Lead (Pb) and Cd elements have behaved constantly during the three types of measurements. Keywords: Thin film XRF, U channel, Elements, Sediment, Measurement

  16. Microwave plasma-assisted ALD of Al2O3 thin films: a study on the substrate temperature dependence of various parameters of interest

    NASA Astrophysics Data System (ADS)

    Thomas, Subin; Nalini, Savitha; Kumar, K. Rajeev

    2017-03-01

    This study utilizes microwave plasma-assisted atomic layer deposition (MPALD) in remote mode to deposit Al2O3 thin films with increased growth per cycle (GPC). Optical emission spectroscopy (OES) was used to identify the plasma configuration in the ALD chamber. MPALD-Al2O3 thin films were deposited at temperatures ranging from room temperature to 200 °C and the electrical parameters were investigated with Al/Al2O3/p-Si metal oxide semiconductor (MOS) structures. A GPC of 0.24 nm was observed for the films deposited at room temperature. The fixed oxide charge densities ( N fix) in all films were of the order of 1012 cm-2. The interface state density ( D it) exhibited a distinct minimum for the films deposited at 100 °C. The dependence of built-in voltage, N fix, and D it on Al2O3 deposition temperature was investigated. This can be used as a measure of the electrical applicability of these thin films.

  17. Formation of ordered films of axially bridged aluminum phthalocyanine [(tBu){sub 4}PcAl]{sub 2}O via magnetic field-induced reaction

    SciTech Connect

    Basova, Tamara Berezin, Aleksei; Nadolinny, Vladimir; Peisert, Heiko; Chassé, Thomas; Banimuslem, Hikmat; Hassan, Aseel

    2013-11-28

    The μ-(oxo)bis[tetra-tert-butylphthalocyaninato] aluminum(III) [(tBu){sub 4}PcAl]{sub 2}O films with the crystallites oriented preferably in one direction were obtained via chemical transformation of tetra-tert-butylsubstituted chloroaluminum(III) phthalocyanine (tBu){sub 4}PcAlCl film upon its annealing in magnetic field. A comparative analysis of the influence of post-deposition annealing process without and under applied magnetic field of 1 T, on the orientation and morphology of (tBu){sub 4}PcAlCl and [(tBu){sub 4}PcAl]{sub 2}O films, has been carried out by the methods of UV-vis, Infrared and Raman spectroscopies, XRD as well as atomic force microscopy. The formation of [(tBu){sub 4}PcAl]{sub 2}O films with elongated crystallites having preferential orientation was observed upon heating of the films in magnetic field while annealing without magnetic field under the same conditions does not demonstrate any effect on the structure and morphology of these films. The reasons of the sensitivity of this reaction to the presence of such magnetic field is discussed and studied by electronic paramagnetic resonance spectroscopy.

  18. Blue-Emitting Eu2+-Doped CaAl2O4 Phosphor Thin Films Prepared Using Pulsed Laser Deposition Technique with Post Annealing

    NASA Astrophysics Data System (ADS)

    Kunimoto, Takashi; Kakehi, Ken-nosuke; Yoshimatsu, Ryo; Ohmi, Koutoku; Tanaka, Shosaku; Kobayashi, Hiroshi

    2001-10-01

    Blue-emitting Eu2+-doped calcium aluminate phosphor thin films were obtained using the pulsed laser deposition technique with post annealing. As-deposited films were amorphous and showed weak red Eu3+ photoluminescence (PL). By annealing in reducing atmosphere (N2/H2:2% mixed gas) at 950°C for 3 h, the film was crystallized and showed a PL emission band peaking at about 447 nm, which originated from the 4f65d to 4f7 transition of Eu2+ ion. It is considered that the deposited film consists mainly of CaAl2O4 and partly of other binary compounds of the CaO-Al2O3 system. It was determined that the PL intensity of Eu2+ in CaAl2O4 can be controlled by the laser fluence, target-substrate distance and injection gas.

  19. Near infrared ray annealing effects on the properties of Al-doped ZnO thin films prepared by spin-coating method.

    PubMed

    Jun, Min-Chul; Park, Sang-Uk; Chae, Moon-Soon; Shin, Dong-Jin; Ha, Jae-Geun; Koo, Sang-Mo; Lee, Kyung-Ju; Moon, Byung-Moo; Song, Chi-Young; Koh, Jung-Hyuk

    2013-09-01

    In this research, we will present Al doped ZnO thin films for transparent conducting oxide applications. Aluminum doped zinc oxide (AZO) thin films have been deposited on the glass substrates by sol-gel spin-coating method using zinc acetate dehydrate (Zn(CH3COO)2 2H2O) and aluminum chloride hexahydrate (AlCl3 x 6H2O) as cation sources. In this study, we investigated the effects of near infrared ray (NIR) annealing on the structural, optical and electrical characteristics of the AZO thin films. The experimental results showed that AZO thin films have a hexagonal wurtzite crystal structure and had a good transmittance higher than 85% within the visible wavelength region. It was also found that the additional energy of NIR helps to improve the electrical properties of Al doped ZnO transparent conducting oxides.

  20. Characterization of the chemical conversion films that form on Mg-Al alloy in colloidal silica solution

    NASA Astrophysics Data System (ADS)

    Kim, Seong-Jong; Zhou, Ying; Ichino, Ryoichi; Okido, Masazumi; Tanikawa, Shoji

    2003-04-01

    Chemical conversion treatment of Mg-Al alloy (AZ91) using colloidal silica as an alternative to chromate conversion was investigated as a function of solution pH, temperature, solution conditions, and treatment time. The solution used for the colloidal silica coating consisted of colloidal silica, titanium sulfate, and cobalt ions to maintain good anti-corrosion and adhesion properties. Adding CoSO4 to the colloidal silica solution enhanced the adhesion force between the silica film and magnesium substrate. The optimum conditions for the chemical conversion treatment solution were pH 2, 90-sec treatment, and 25°C.

  1. Low-temperature atomic layer deposition of Al{sub 2}O{sub 3} on blown polyethylene films with plasma-treated surfaces

    SciTech Connect

    Beom Lee, Gyeong; Sik Son, Kyung; Won Park, Suk; Hyung Shim, Joon; Choi, Byoung-Ho

    2013-01-15

    In this study, a layer of Al{sub 2}O{sub 3} was deposited on blown polyethylene films by atomic layer deposition (ALD) at low temperatures, and the surface characteristics of these Al{sub 2}O{sub 3}-coated blown polyethylene films were analyzed. In order to examine the effects of the plasma treatment of the surfaces of the blown polyethylene films on the properties of the films, both untreated and plasma-treated film samples were prepared under various processing conditions. The surface characteristics of the samples were determined by x-ray photoelectron spectroscopy, as well as by measuring their surface contact angles. It was confirmed that the surfaces of the plasma-treated samples contained a hydroxyl group, which helped the precursor and the polyethylene substrate to bind. ALD of Al{sub 2}O{sub 3} was performed through sequential exposures to trimethylaluminum and H{sub 2}O at 60 Degree-Sign C. The surface morphologies of the Al{sub 2}O{sub 3}-coated blown polyethylene films were observed using atomic force microscopy and scanning electron microscopy/energy-dispersive x-ray spectroscopy. Further, it was confirmed that after ALD, the surface of the plasma-treated film was covered with alumina grains more uniformly than was the case for the surface of the untreated polymer film. It was also confirmed via the focused ion beam technique that the layer Al{sub 2}O{sub 3} conformed to the surface of the blown polyethylene film.

  2. Thermo-Optical Properties of Thin-Film TiO2–Al2O3 Bilayers Fabricated by Atomic Layer Deposition

    PubMed Central

    Ali, Rizwan; Saleem, Muhammad Rizwan; Pääkkönen, Pertti; Honkanen, Seppo

    2015-01-01

    We investigate the optical and thermo-optical properties of amorphous TiO2–Al2O3 thin-film bilayers fabricated by atomic layer deposition (ALD). Seven samples of TiO2–Al2O3 bilayers are fabricated by growing Al2O3 films of different thicknesses on the surface of TiO2 films of constant thickness (100 nm). Temperature-induced changes in the optical refractive indices of these thin-film bilayers are measured by a variable angle spectroscopic ellipsometer VASE®. The optical data and the thermo-optic coefficients of the films are retrieved and calculated by applying the Cauchy model and the linear fitting regression algorithm, in order to evaluate the surface porosity model of TiO2 films. The effects of TiO2 surface defects on the films’ thermo-optic properties are reduced and modified by depositing ultra-thin ALD-Al2O3 diffusion barrier layers. Increasing the ALD-Al2O3 thickness from 20 nm to 30 nm results in a sign change of the thermo-optic coefficient of the ALD-TiO2. The thermo-optic coefficients of the 100 nm-thick ALD-TiO2 film and 30 nm-thick ALD-Al2O3 film in a bilayer are (0.048 ± 0.134) × 10−4 °C−1 and (0.680 ± 0.313) × 10−4 °C−1, respectively, at a temperature T = 62 °C.

  3. Investigation of the surface passivation mechanism through an Ag-doped Al-rich film using a solution process

    NASA Astrophysics Data System (ADS)

    Khan, Firoz; Baek, Seong-Ho; Kim, Jae Hyun

    2015-12-01

    Electronic recombination loss is an important issue for photovoltaic (PV) devices. While it can be reduced by using a passivating layer, most of the techniques used to prepare passivating layers are either not cost effective or not applicable for device applications. Previously, it was reported that a low cost sol-gel derived Al-rich zinc oxide (ZnO:Al) film serves as an effective passivating layer for p-type silicon but is not effective for n-type silicon. Herein, we studied the elemental composition of the film and the interfacial structure of ZnO:Al:Ag/n-Si using TEM, XPS, FTIR, and SIMS analyses. The XPS analysis revealed that Ag-rich zones randomly formed in the film near the ZnO:Al:Ag//n-Si interface, which induced a positive charge at the interface. The maximal value of the effective minority carrier lifetime (τeff ~ 1581 μs) is obtained for a wafer using the ZnO:Al:Ag passivating layer with RAg/Zn = 2%. The corresponding limiting surface recombination velocity is ~16 cm s-1. The FTIR absorption area of Si-H bonds is used to calculate the hydrogen content in the film. The hydrogen content is increased with increasing Ag content up to RAg/Zn = 2% to a maximal value of 3.89 × 1022 atoms per cm3 from 3.03 × 1022 atoms per cm3 for RAg/Zn = 0%. The positive charge induced at the interface may cause band bending, which would produce an electric field that repels the minority charge carriers from the interface to the bulk of n-Si. Two basic phenomena, chemical passivation due to Si-H bonding and field effect passivation due to the charge induced at the interface, have been observed for effective passivation of the n-Si surface. An implied Voc of 688.1 mV is obtained at an illumination intensity of 1 sun.Electronic recombination loss is an important issue for photovoltaic (PV) devices. While it can be reduced by using a passivating layer, most of the techniques used to prepare passivating layers are either not cost effective or not applicable for device

  4. UV photoemission study of heteroepitaxial AlGaN films grown on 6H-SiC

    NASA Astrophysics Data System (ADS)

    Benjamin, M. C.; Bremser, M. D.; Weeks, T. W.; King, S. W.; Davis, R. F.; Nemanich, R. J.

    1996-09-01

    This study presents results of UV photoemission measurements of the surface and interface properties of heteroepitaxial AlGaN on 6H-SiC. Previous results have demonstrated a negative electron affinity of AlN on 6H-SiC. In this study Al xGa 1- xN alloy films were grown by organometallic vapor phase epitaxy (OMVPE) and doped with silicon. The analytical techniques included UPS, Auger electron spectroscopy, and LEED. All analysis took place in an integrated UHV transfer system which included the analysis techniques, a surface processing chamber and a gas source MBE. The OMVPE alloy samples were transported in air to the surface characterization system while the AlN and GaN investigations were prepared in situ. The surface electronic states were characterized by surface normal UV photoemission to determine whether the electron affinity was positive or negative. Two aspects of the photoemission distinguish a surface that exhibits a NEA: (1) the spectrum exhibits a sharp peak in the low kinetic energy region, and (2) the width of the spectrum is hv - Eg. The in situ prepared AlN samples exhibited the characteristics of a NEA while the GaN and Al 0.13Ga 0.87N samples did not. The Al 0.55Ga 0.45N sample shows a low positive electron affinity. Annealing of the sample to > 400°C resulted in the disappearance of the sharp emission features, and this effect was related to contaminant effects on the surface. The results suggest the potential of nitride based cold cathode electron emitters.

  5. Inhomogeneity of anodic oxide films of Al and Al alloys characterized by scanning electron microscopy observation and analysis of frequency response behavior

    NASA Astrophysics Data System (ADS)

    Ozawa, Kiyoshi; Majima, Teiji

    1999-02-01

    Inhomogeneity of anodic oxide films of pure Al, Al-0.42 at. % Ta, Al-1.1 at. % Ta, Al-0.5 at. % Ti, and Al-1.0 wt % Si formed in various electrolyte solutions has been investigated. Scanning electron microscopy observation of their cross sections revealed their structural inhomogeneity: they consist of an inner layer element with a smooth texture and an outer layer element distinguished by its textural properties such as roughness and macroscopic voids. An imaginary part of the impedance for those oxides revealed their electrical inhomogeneity: their impedance spectra were fitted by the summation of characteristic Debye functions, PC, PV1, and PV2, in the frequency regime where direct current conduction predominated. This indicates that three differing processes of charge transport coexist. Only PC which had the shortest conductivity relaxation time was manifested for the oxide, where a smooth texture was observed. PV1 which had the second shortest relaxation time was predominantly manifested for the oxide, where a rough texture indicating the existence of minute voids was observed. PV2 which had the longest relaxation time was predominantly manifested for the oxide, where macroscopic voids were observed. Based on the close correlation between the texture and the impedance spectra, PC, PV1, and PV2 were attributed to the traps induced at the microvoids, minute voids, and macroscopic voids. The temperature dependence of the conductivities, as derived from the Debye peaks, showed that oxides had a well-defined trap level 2.0±0.2 eV below the conduction band edge. The trap density was least for the oxide with a smooth texture and it was higher by more than an order of magnitude for the oxide with a rough texture. As regards the anodization behavior, it was shown that the oxidizing reactants migrating toward the matrix metal was OH- and that the reaction to produce H2 near the oxide-matrix metal interface was suppressed by the predominant reaction to form an Si-H bond

  6. Electronic structure of Al- and Ga-doped ZnO films studied by hard X-ray photoelectron spectroscopy

    SciTech Connect

    Gabás, M.; Ramos Barrado, José R.; Torelli, P.; Barrett, N. T.

    2014-01-01

    Al- and Ga-doped sputtered ZnO films (AZO, GZO) are semiconducting and metallic, respectively, despite the same electronic valence structure of the dopants. Using hard X-ray photoelectron spectroscopy we observe that both dopants induce a band in the electronic structure near the Fermi level, accompanied by a narrowing of the Zn 3d/O 2p gap in the valence band and, in the case of GZO, a substantial shift in the Zn 3d. Ga occupies substitutional sites, whereas Al dopants are in both substitutional and interstitial sites. The latter could induce O and Zn defects, which act as acceptors explaining the semiconducting character of AZO and the lack of variation in the optical gap. By contrast, mainly substitutional doping is consistent with the metallic-like behavior of GZO.

  7. Effect of Al content, substrate temperature and nitrogen flow on the reactive magnetron co-sputtered nanostructure in TiAlN thin films intended for use as barrier material in DRAMs

    NASA Astrophysics Data System (ADS)

    Jalali, Reza; Parhizkar, Mojtaba; Bidadi, Hasan; Naghshara, Hamid; Hosseini, Seyd Reza; Jafari, Majid

    2015-03-01

    TiAlN thin films were deposited by using the reactive magnetron co-sputtering method whit individual Ti and Al targets, where the Ti and the Al targets were simultaneously powered by using DC and RF sources, respectively. the electrical resistivity and the structural and microstructural properties of the deposited TiAlN thin films and the effects of Al content, substrate temperature and nitrogen gas flow rate on those properties were investigated. At a low flow rate of nitrogen gas (0.51 sccm), the electrical resistivity of the films was found to increase with increasing AC power, but at a high flow rate of nitrogen gas, it was found to decrease. The structural and microstructural analyses performed by using X-ray diffraction and scanning electron microscopy (SEM) showed that with increasing substrate temperature from room temperature to 400 ℃, the films prepared at 400 ℃ have a crystalline structure while those prepared at room temperature had an amorphous nature. Also, the SEM analysis revealed that with decreasing AC power and increasing nitrogen flow rate, the size of the grains in the prepared films become larger.

  8. Films.

    ERIC Educational Resources Information Center

    Philadelphia Board of Education, PA. Div. of Instructional Materials.

    The Affective Curriculum Research Project produced five films and two records during a series of experimental summer programs. The films and records form part of a curriculum designed to teach to the concerns of students. The films were an effort to describe the Philadelphia Cooperative Schools Program, to explain its importance, and to…

  9. Room temperature photoluminescence from In{sub x}Al{sub (1−x)}N films deposited by plasma-assisted molecular beam epitaxy

    SciTech Connect

    Kong, W. Jiao, W. Y.; Kim, T. H.; Brown, A. S.; Mohanta, A.; Roberts, A. T.; Fournelle, J.; Losurdo, M.; Everitt, H. O.

    2014-09-29

    InAlN films deposited by plasma-assisted molecular beam epitaxy exhibited a lateral composition modulation characterized by 10–12 nm diameter, honeycomb-shaped, columnar domains with Al-rich cores and In-rich boundaries. To ascertain the effect of this microstructure on its optical properties, room temperature absorption and photoluminescence characteristics of In{sub x}Al{sub (1−x)}N were comparatively investigated for indium compositions ranging from x = 0.092 to 0.235, including x = 0.166 lattice matched to GaN. The Stokes shift of the emission was significantly greater than reported for films grown by metalorganic chemical vapor deposition, possibly due to the phase separation in these nanocolumnar domains. The room temperature photoluminescence also provided evidence of carrier transfer from the InAlN film to the GaN template.

  10. Structural, optical, morphological and electrical properties of undoped and Al-doped ZnO thin films prepared using sol—gel dip coating process

    NASA Astrophysics Data System (ADS)

    Boukhenoufa, N.; Mahamdi, R.; Rechem, D.

    2016-11-01

    In this work, sol—gel dip-coating technique was used to elaborate ZnO pure and ZnO/Al films. The impact of Al-doped concentration on the structural, optical, surface morphological and electrical properties of the elaborated samples was investigated. It was found that better electrical and optical performances have been obtained for an Al concentration equal to 5%, where the ZnO thin films exhibit a resistivity value equal to 1.64104 Ω·cm. Moreover, highest transparency has been recorded for the same Al concentration value. The obtained results from this investigation make the developed thin film structure a potential candidate for high optoelectronic performance applications.

  11. Atomic scale structure of amorphous aluminum oxyhydroxide, oxide and oxycarbide films probed by very high field (27)Al nuclear magnetic resonance.

    PubMed

    Baggetto, L; Sarou-Kanian, V; Florian, P; Gleizes, A N; Massiot, D; Vahlas, C

    2017-03-15

    The atomic scale structure of aluminum in amorphous alumina films processed by direct liquid injection chemical vapor deposition from aluminum tri-isopropoxide (ATI) and dimethyl isopropoxide (DMAI) is investigated by solid-state (27)Al nuclear magnetic resonance (SSNMR) using a very high magnetic field of 20.0 T. This study is performed as a function of the deposition temperature in the range 300-560 °C, 150-450 °C, and 500-700 °C, for the films processed from ATI, DMAI (+H2O), and DMAI (+O2), respectively. While the majority of the films are composed of stoichiometric aluminum oxide, other samples are partially or fully hydroxylated at low temperature, or contain carbidic carbon when processed from DMAI above 500 °C. The quantitative analysis of the SSNMR experiments reveals that the local structure of these films is built from AlO4, AlO5, AlO6 and Al(O,C)4 units with minor proportions of the 6-fold aluminum coordination and significant amounts of oxycarbides in the films processed from DMAI (+O2). The aluminum coordination distribution as well as the chemical shift distribution indicate that the films processed from DMAI present a higher degree of structural disorder compared to the films processed from ATI. Hydroxylation leads to an increase of the 6-fold coordination resulting from the trend of OH groups to integrate into AlO6 units. The evidence of an additional environment in films processed from DMAI (+O2) by (27)Al SSNMR and first-principle NMR calculations on Al4C3 and Al4O4C crystal structures supports that carbon is located in Al(O,C)4 units. The concentration of this coordination environment strongly increases with increasing process temperature from 600 to 700 °C favoring a highly disordered structure and preventing from crystallizing into γ-alumina. The obtained results are a valuable guide to the selection of process conditions for the CVD of amorphous alumina films with regard to targeted applications.

  12. Round robin comparison of tensile results on GlidCop Al25

    SciTech Connect

    Edwards, D.J.; Zinkle, S.J.; Fabritsiev, S.A.; Pokrovsky, A.S.

    1998-09-01

    A round robin comparison of the tensile properties of GlidCop{trademark} Al25 oxide dispersion strengthened copper was initiated between collaborating laboratories to evaluate the test and analysis procedures used in the irradiation experiments in SRIAR in Dimitrovgrad. The tests were conducted using the same tensile specimen geometry as used in previous irradiation experiments, with tests at each laboratory being conducted in air or vacuum at 25, 150, and 300 C at a strain rate of 3 {times} 10{sup {minus}4} s{sup {minus}1}. The strength of the GlidCop Al25 decreased as the test temperature increased, with no observable effect of testing in air versus vacuum on the yield and ultimate strengths. The uniform elongation decreased by almost a factor of 3 when the test temperature was raised from room temperature to 300 C, but the total elongation remained roughly constant over the range of test temperatures. Any effect of testing in air on the ductility may have been masked by the scatter introduced into the results because each laboratory tested the specimens in a different grip setup. In light of this, the results of the round robin tests demonstrated that the test and analysis procedures produced essentially the same values for tensile yield and ultimate, but significant variability was present in both the uniform and total elongation measurements due to the gripping technique.

  13. Comparisons of Accurate Electronic, Transport, and Bulk Properties of XP (X = B, Al, Ga, In)

    NASA Astrophysics Data System (ADS)

    Malozovsky, Yuriy; Ejembi, John; Saliev, Azizjon; Franklin, Lashounda; Bagayoko, Diola

    We present comparisons of results from ab-initio,self-consistent local density approximation (LDA) calculations of accurate, electronic and related properties of zinc blende XP (X =B, Al, Ga, In) phosphides. We implemented the linear combination of atomic orbitals following the Bagayoko, Zhao, and Williams (BZW) method as enhanced by Ekuma and Franklin (BZW-EF). Consequently, our results have the full physical content of DFT and agree very well with corresponding experimental ones [AIP Advances, 4, 127104 (2014)]. Our calculated, indirect band gap of 2.02 eV for BP, 2.56 eV for AlP, and of 2.29 eV for GaP, from Γ to X-point, are in excellent agreement with experimental values. Our calculated direct band gap of 1.43 eV, at Γ, for InP is also in an excellent agreement with experimental value. We discuss calculated electron and hole effective masses, total (DOS) and partial (pDOS) densities of states, and the bulk modulus of these phosphides. Acknowledgments: NSF and the Louisiana Board of Regents, LASiGMA [Award Nos. EPS- 1003897, NSF (2010-15)-RII-SUBR] and NSF HRD-1002541, DOE - National, Nuclear Security Administration (NNSA) (Award Nos. DE-NA0001861 and DE- NA0002630), LaSPACE, and LONI-SUBR.

  14. Transparent conducting Si-codoped Al-doped ZnO thin films prepared by magnetron sputtering using Al-doped ZnO powder targets containing SiC

    SciTech Connect

    Nomoto, Jun-ichi; Miyata, Toshihiro; Minami, Tadatsugu

    2009-07-15

    Transparent conducting Al-doped ZnO (AZO) thin films codoped with Si, or Si-codoped AZO (AZO:Si), were prepared by radio-frequency magnetron sputtering using a powder mixture of ZnO, Al{sub 2}O{sub 3}, and SiC as the target; the Si content (Si/[Si+Zn] atomic ratio) was varied from 0 to 1 at. %, but the Al content (Al/[Al+Zn] atomic ratio) was held constant. To investigate the effect of carbon on the electrical properties of AZO:Si thin films prepared using the powder targets containing SiC, the authors also prepared thin films using a mixture of ZnO, Al{sub 2}O{sub 3}, and SiO{sub 2} or SiO powders as the target. They found that when AZO:Si thin films were deposited on glass substrates at about 200 degree sign C, both Al and Si doped into ZnO acted as effective donors and the atomic carbon originating from the sputtered target acted as a reducing agent. As a result, sufficient improvement was obtained in the spatial distribution of resistivity on the substrate surface in AZO:Si thin films prepared with a Si content (Si/[Si+Zn] atomic ratio) of 0.75 at. % using powder targets containing SiC. The improvement in resistivity distribution was mainly attributed to increases in both carrier concentration and Hall mobility at locations on the substrate corresponding to the target erosion region. In addition, the resistivity stability of AZO: Si thin films exposed to air for 30 min at a high temperature was found to improve with increasing Si content.

  15. Al2O3 half-wave films for long-life CW lasers

    NASA Technical Reports Server (NTRS)

    Ladany, I.; Ettenberg, M.; Lockwood, H. F.; Kressel, H.

    1977-01-01

    Long-term operating-life data are reported for (AlGa)As CW laser diodes. The use of half-wave Al2O3 facet coatings is shown to eliminate facet erosion, allowing stable diode operation at constant current for periods in excess of 10,000 h.

  16. Stability and inoculation of risk comparisons' effects under conflict: replicating and extending the "asbestos jury" study by Slovic et al.

    PubMed

    Johnson, Branden B

    2002-08-01

    Promotion or criticism of risk comparisons in risk communication has far exceeded empirical tests of their effects. Slovic et al. (1990) experimented with a hypothetical jury trial in which an asbestos-installing firm was accused of subjecting school occupants to unreasonable risk. A risk comparison sharply reduced subjects' estimates of risk and judgments that the firm was guilty, but a critique of the risk comparison had risk estimates and guilt judgments rebounding to the original (without risk comparison) level. Slovic et al. concluded that risk comparisons' effects were highly unstable, at least in conflict-ridden situations such as a jury trial. The present study replicates and extends this important study, using the same stimuli and que