Formation of SiGe nanocrystals embedded in Al{sub 2}O{sub 3} for the application of write-once-read-many-times memory

DOE Office of Scientific and Technical Information (OSTI.GOV)

Wu, Min-Lin; Wu, Yung-Hsien; Lin, Chia-Chun

2012-10-15

The structure of SiGe nanocrystals embedded in Al{sub 2}O{sub 3} formed by sequential deposition of Al{sub 2}O{sub 3}/Si/Ge/Al{sub 2}O{sub 3} and a subsequent annealing was confirmed by transmission electron microscopy and energy dispersive spectroscopy (EDS), and its application for write-once-read-many-times (WORM) memory devices was explored in this study. By applying a -10 V pulse for 1 s, a large amount of holes injected from Si substrate are stored in the nanocrystals and consequently, the current at +1.5 V increases by a factor of 10{sup 4} as compared to that of the initial state. Even with a smaller -5 V pulsemore » for 1 {mu}s, a sufficiently large current ratio of 36 can still be obtained, verifying the low power operation. Since holes are stored in nanocrystals which are isolated from Si substrate by Al{sub 2}O{sub 3} with good integrity and correspond to a large valence band offset with respect to Al{sub 2}O{sub 3}, desirable read endurance up to 10{sup 5} cycles and excellent retention over 100 yr are achieved. Combining these promising characteristics, WORM memory devices are appropriate for high-performance archival storage applications.« less

Stability of the Al/TiB2 interface and doping effects of Mg/Si

NASA Astrophysics Data System (ADS)

Deng, Chao; Xu, Ben; Wu, Ping; Li, Qiulin

2017-12-01

The Al/TiB2 interface is of significant importance in controlling the mechanical properties of Al-B4C composites and tuning the heterogeneous nucleation of Al/Si alloys in industry. Its stability and bonding conditions are critical for both purposes. In this paper, the interfacial energies were investigated by first-principles calculations, and the results support the reported grain refinement mechanisms in Al/Si alloys. Moreover, to improve the mechanical properties of the interface, Mg and Si were doped at the interface, and our simulations show that the two interfaces will both weaken after doping Mg/Si, thus the formation of TiB2 is inhibited. As a result, the processability of the Al-B4C composites may be improved. Our results provide a theoretical basis and guidance for practical applications.

Platinum metallization for MEMS application

PubMed Central

Guarnieri, Vittorio; Biazi, Leonardo; Marchiori, Roberto; Lago, Alexandre

2014-01-01

The adherence of Platinum thin film on Si/SiO2 wafer was studies using Chromium, Titanium or Alumina (Cr, Ti, Al2O3) as interlayer. The adhesion of Pt is a fundamental property in different areas, for example in MEMS devices, which operate at high temperature conditions, as well as in biomedical applications, where the problem of adhesion of a Pt film to the substrate is known as a major challenge in several industrial applications health and in biomedical devices, such as for example in the stents.1-4 We investigated the properties of Chromium, Titanium, and Alumina (Cr, Ti, and Al2O3) used as adhesion layers of Platinum (Pt) electrode. Thin films of Chromium, Titanium and Alumina were deposited on Silicon/Silicon dioxide (Si/SiO2) wafer by electron beam. We introduced Al2O3 as a new adhesion layer to test the behavior of the Pt film at higher temperature using a ceramic adhesion thin film. Electric behaviors were measured for different annealing temperatures to know the performance for Cr/Pt, Ti/Pt, and Al2O3/Pt metallic film in the gas sensor application. All these metal layers showed a good adhesion onto Si/SiO2 and also good Au wire bondability at room temperature, but for higher temperature than 400 °C the thin Cr/Pt and Ti/Pt films showed poor adhesion due to the atomic inter-diffusion between Platinum and the metal adhesion layers.5 The proposed Al2O3/Pt ceramic-metal layers confirmed a better adherence for the higher temperatures tested. PMID:24743057

Metals Technology for Aerospace Applications in 2020: Development of High Temperature Aluminum Alloys For Aerospace Applications

NASA Technical Reports Server (NTRS)

Dicus, Dennis (Technical Monitor); Starke, Edgar A., Jr.

2003-01-01

The role of trace additions on the nucleation and stability of the primary strengthening phase, omega, is of paramount importance for the enhancement of mechanical properties for moderate temperature application of Al-Cu-Mg-(Ag) alloys. In order to better understand the competition for solute, which governs the microstructural evolution of these alloys, a series of Al-Cu-Mg-Si quaternary alloys were prepared to investigate the role of trace Si additions on the nucleation of the omega phase. Si additions were found to quell omega nucleation in conjunction with the enhanced matrix precipitation of competing phases. These initial results indicate that it is necessary to overcome a critical Mg/Si ratio for omega precipitation, rather than a particular Si content.

Development of GaAs/Si and GaAs/Si monolithic structures for future space solar cells

NASA Technical Reports Server (NTRS)

Spitzer, M. B.; Vernon, S. M.; Wolfson, R. G.; Tobin, S. P.

1984-01-01

The results of heteroepitaxial growth of GaAs and GaAlAs directly on Si are presented, and applications to new cell structures are suggested. The novel feature is the elimination of a Ge lattice transition region. This feature not only reduces the cost of substrate preparation, but also makes possible the fabrication of high efficiency monolithic cascade structures. All films to be discussed were grown by organometallic chemical vapor deposition at atmospheric pressure. This process yielded reproducible, large-area films of GaAs, grown directly on Si, that are tightly adherent and smooth, and are characterized by a defect density of 5 x 10(6) power/sq cm. Preliminary studies indicate that GaAlAs can also be grown in this way. A number of promising applications are suggested. Certainly these substrates are ideal for low-weight GaAs space solar ells. For very high efficiency, the absence of Ge makes the technology attractive for GaAlAs/Si monolithic cascades, in which the Si substrates would first be provided with a suitable p/n junction. An evaluation of a three bandgap cascade consisting of appropriately designed GaAlAs/GaAs/Si layers is also presented.

Effects of sintering additives on the microstructural and mechanical properties of the ion-irradiated SiCf/SiC

NASA Astrophysics Data System (ADS)

Fitriani, Pipit; Sharma, Amit Siddharth; Yoon, Dang-Hyok

2018-05-01

SiCf/SiC composites containing three different types of sintering additives viz. Sc-nitrate, Al2O3-Sc2O3, and Al2O3-Y2O3, were subjected to ion irradiation using 0.2 MeV H+ ions with a fluence of 3 × 1020 ions/m2 at room temperature. Although all composites showed volumetric swelling upon ion irradiation, SiCf/SiC with Sc-nitrate showed the smallest change followed by those with the Al2O3-Sc2O3 and Al2O3-Y2O3 additives. In particular, SiCf/SiC containing the conventional Al2O3-Y2O3 additive revealed significant microstructural changes, such as surface roughening and the formation of cracks and voids, resulting in reduced fiber pullout upon irradiation. On the other hand, the SiCf/SiC with Sc-nitrate showed the highest resistance against ion irradiation without showing any macroscopic changes in surface morphology and mechanical strength, indicating the importance of the sintering additive in NITE-based SiCf/SiC for nuclear structural applications.

A long-term ultrahigh temperature application of layered silicide coated Nb alloy in air

NASA Astrophysics Data System (ADS)

Sun, Jia; Fu, Qian-Gang; Li, Tao; Wang, Chen; Huo, Cai-Xia; Zhou, Hong; Yang, Guan-Jun; Sun, Le

2018-05-01

Nb-based alloy possessed limited application service life at ultrahigh temperature (>1400 °C) in air even taking the effective protective coating strategy into consideration for last decades. In this work a long duration of above 128 h at 1500 °C in air was successfully achieved on Nb-based alloy thanked to multi-layered silicide coating. Through optimizing interfaces, the MoSi2/NbSi2 silicide coating with Al2O3-adsorbed-particles layer exhibited three-times higher of oxidation resistance capacity than the one without it. In MoSi2-Al2O3-NbSi2 multilayer coating, the Al2O3-adsorbed-particles layer playing as an element-diffusion barrier role, as well as the formed porous Nb5Si3 layer as a stress transition zone, contributed to the significant improvement.

First-principles study of spin-transfer torque in Co{sub 2}MnSi/Al/Co{sub 2}MnSi spin-valve

DOE Office of Scientific and Technical Information (OSTI.GOV)

Tang, Ling, E-mail: lingtang@zjut.edu.cn; Yang, Zejin, E-mail: zejinyang@zjut.edu.cn

The spin-transfer torque (STT) in Co{sub 2}MnSi(CMS)/Al/Co{sub 2}MnSi spin-valve system with and without interfacial disorder is studied by a first-principles noncollinear wave-function-matching method. It is shown that in the case of clean interface the angular dependence of STT for CoCo/Al (the asymmetry parameter Λ≈4.5) is more skewed than that for MnSi/Al (Λ≈2.9), which suggests the clean CoCo/Al architecture is much more efficient for the application on radio frequency oscillation. We also find that even with interfacial disorder the spin-valve of half-metallic CMS still has a relatively large parameter Λ compared to that of conventional ferromagnet. In addition, for clean interfacemore » the in-plane torkance of MnSi/Al is about twice as large as that of CoCo/Al. However, as long as the degree of interfacial disorder is sufficiently large, the CoCo/Al and MnSi/Al will show approximately the same magnitude of in-plane torkance. Furthermore, our results demonstrate that CMS/Al/CMS system has very high efficiency of STT to switch the magnetic layer of spin-valve.« less

Investigations on Mechanical Behaviour of Micro Graphite Particulates Reinforced Al-7Si Alloy Composites

NASA Astrophysics Data System (ADS)

Nagaraj, N.; Mahendra, K. V.; Nagaral, Madeva

2018-02-01

Micro particulates reinforced metal matrix composites are finding wide range of applications in automotive and sports equipment manufacturing industries. In the present study, an attempt has been made to develop Al-7Si-micro graphite particulates reinforced composites by using liquid melt method. 3 and 6 wt. % of micro graphite particulates were added to the Al-7Si base matrix. Microstructural characterization was done by using scanning electron microscope and energy dispersive spectroscope. Mechanical behaviour of Al-7Si-3 and 6 wt. % composites were evaluated as per ASTM standards. Scanning electron micrographs revealed the uniform distribution of micro graphite particulates in the Al-7Si alloy matrix. EDS analysis confirmed the presence of B and C elements in graphite reinforced composites. Further, it was noted that ultimate tensile and yield strength of Al-7Si alloy increased with the addition of 3 and 6wt. % of graphite particulates. Hardness of graphite reinforced composites was lesser than the base matrix.

Breaking through the strength-ductility trade-off dilemma in an Al-Si-based casting alloy.

PubMed

Dang, B; Zhang, X; Chen, Y Z; Chen, C X; Wang, H T; Liu, F

2016-08-09

Al-Si-based casting alloys have a great potential in various industrial applications. Common strengthening strategies on these alloys are accompanied inevitably by sacrifice of ductility, known as strength-ductility trade-off dilemma. Here, we report a simple route by combining rapid solidification (RS) with a post-solidification heat treatment (PHT), i.e. a RS + PHT route, to break through this dilemma using a commercial Al-Si-based casting alloy (A356 alloy) as an example. It is shown that yield strength and elongation to failure of the RS + PHT processed alloy are elevated simultaneously by increasing the cooling rate upon RS, which are not influenced by subsequent T6 heat treatment. Breaking through the dilemma is attributed to the hierarchical microstructure formed by the RS + PHT route, i.e. highly dispersed nanoscale Si particles in Al dendrites and nanoscale Al particles decorated in eutectic Si. Simplicity of the RS + PHT route makes it being suitable for industrial scaling production. The strategy of engineering microstructures offers a general pathway in tailoring mechanical properties of other Al-Si-based alloys. Moreover, the remarkably enhanced ductility of A356 alloy not only permits strengthening further the material by work hardening but also enables possibly conventional solid-state forming of the material, thus extending the applications of such an alloy.

Breaking through the strength-ductility trade-off dilemma in an Al-Si-based casting alloy

PubMed Central

Dang, B.; Zhang, X.; Chen, Y. Z.; Chen, C. X.; Wang, H. T.; Liu, F.

2016-01-01

Al-Si-based casting alloys have a great potential in various industrial applications. Common strengthening strategies on these alloys are accompanied inevitably by sacrifice of ductility, known as strength-ductility trade-off dilemma. Here, we report a simple route by combining rapid solidification (RS) with a post-solidification heat treatment (PHT), i.e. a RS + PHT route, to break through this dilemma using a commercial Al-Si-based casting alloy (A356 alloy) as an example. It is shown that yield strength and elongation to failure of the RS + PHT processed alloy are elevated simultaneously by increasing the cooling rate upon RS, which are not influenced by subsequent T6 heat treatment. Breaking through the dilemma is attributed to the hierarchical microstructure formed by the RS + PHT route, i.e. highly dispersed nanoscale Si particles in Al dendrites and nanoscale Al particles decorated in eutectic Si. Simplicity of the RS + PHT route makes it being suitable for industrial scaling production. The strategy of engineering microstructures offers a general pathway in tailoring mechanical properties of other Al-Si-based alloys. Moreover, the remarkably enhanced ductility of A356 alloy not only permits strengthening further the material by work hardening but also enables possibly conventional solid-state forming of the material, thus extending the applications of such an alloy. PMID:27502444

Development of MoSi2 coating with Al doping by using high energy milling method

NASA Astrophysics Data System (ADS)

Simanjuntak, C. M. S.; Hastuty, S.; Izzuddin, H.; Sundawa, R.; Sudiro, T.; Sukarto, A.; Thosin, K. A. Z.

2018-03-01

MoSi2 is well known as a material for high temperature application because it has high oxidation and corrosion resistance. The aim of this research is to develop MoSi2 coating with Al doping on Stainless Steel 316 (SS316) substrate using High-Energy Milling method. Aluminium is added to the coating as a dopant to increase formation of MoSi2 coating layer on the substrate. The variations used here based on the concentrations of doping Al (at.%) and duration of milling. Results show that the MoSi2 coatings with variations of 30 and 50 at.% of Al doping and 3 and 6 hours of milling times were successfully coated on the surface of SS 316 using the high-energy milling method. The most optimum coating result after oxidation test at 1100 °C for 100 hours is shown by MoSi2-30%Al with 3 hours of milling times. From the oxidation results, the Al doping into MoSi2 coating was able to increase the oxidation resistance of the SS 316 substrate.

Enhancement of red emission intensity of Ca2Al2SiO7:Eu3+ phosphor by MoO3 doping or excess SiO2 addition for application to white LEDs

NASA Astrophysics Data System (ADS)

Jiao, H. Y.; LiMao, C. R.; Chen, Q.; Wang, P. Y.; Cai, R. C.

2018-01-01

Ca1.86Al2(Si1-xMox)O7:0.14Eu3+ and Ca1.86Al2Si1+yO7+2y:0.14 Eu3+ were synthesized by solid-state reaction. X-ray powder diffraction, excitation and emission spectra were used to investigate their structures and photoluminescence properties. The results shows that the phosphor Ca1.86Al2SiO7:0.14Eu3+ cannot be excited efficiently by light of 393 nm. The introduced Mo ion does not change the position of the excitation peak, but increases both the absorption at 400nm and the emission intensity of Eu3+. The intense red emitting phosphor Ca1.86Al2(Si0.95Mo0.05)O7:0.14Eu3+ was obtained, which has 67% enhanced luminous intensity compared to that of the undoped sample Ca1.86Al2SiO7:0.14Eu3+. Otherwise, SiO2 excess of non-stoichiometric phosphors Ca1.86Al2Si1+yO7+2y:0.14Eu3+ showed the characteristic pattern of a tetragonal structure with a small SiO2 concentration. The optimal phosphor of Ca1.86Al2Si1.1O7.2:0.14Eu3+ has a luminous intensity about two times higher than that of the original stoichiometric phosphor Ca1.86Al2SiO7:0.14Eu3+. We confirmed that the photoluminescence intensity of the obtained phosphors is fairly enhanced by excessive SiO2. The mechanism of this photoluminescence enhancement is discussed in this paper.

Electrical properties and surface morphology of electron beam evaporated p-type silicon thin films on polyethylene terephthalate for solar cells applications

DOE Office of Scientific and Technical Information (OSTI.GOV)

Ang, P. C.; Ibrahim, K.; Pakhuruddin, M. Z.

2015-04-24

One way to realize low-cost thin film silicon (Si) solar cells fabrication is by depositing the films with high-deposition rate and manufacturing-compatible electron beam (e-beam) evaporation onto inexpensive foreign substrates such as glass or plastic. Most of the ongoing research is reported on e-beam evaporation of Si films on glass substrates to make polycrystalline solar cells but works combining both e-beam evaporation and plastic substrates are still scarce in the literature. This paper studies electrical properties and surface morphology of 1 µm electron beam evaporated Al-doped p-type silicon thin films on textured polyethylene terephthalate (PET) substrate for application as anmore » absorber layer in solar cells. In this work, Si thin films with different doping concentrations (including an undoped reference) are prepared by e-beam evaporation. Energy dispersion X-ray (EDX) showed that the Si films are uniformly doped by Al dopant atoms. With increased Al/Si ratio, doping concentration increased while both resistivity and carrier mobility of the films showed opposite relationships. Root mean square (RMS) surface roughness increased. Overall, the Al-doped Si film with Al/Si ratio of 2% (doping concentration = 1.57×10{sup 16} atoms/cm{sup 3}) has been found to provide the optimum properties of a p-type absorber layer for fabrication of thin film Si solar cells on PET substrate.« less

Evidence for Al/Si tetrahedral network in aluminosilicate glasses from Al K-edge x-ray-absorption spectroscopy

NASA Astrophysics Data System (ADS)

Wu, Ziyu; Romano, C.; Marcelli, A.; Mottana, A.; Cibin, G.; della Ventura, G.; Giuli, G.; Courtial, P.; Dingwell, D. B.

1999-10-01

The structure of aluminosilicate melts and/or glasses plays a key role in the earth sciences for the understanding of rock-forming igneous processes, as well as in the materials sciences for their technical applications. In particular, the alkaline-earth aluminosilicate glasses are an extremely important group of materials, with a wide range of commercial application, as well as serving as an analog for natural basaltic melts. However, definition of their structure and properties is still controversial, and in particular the role and effect of Al has long been a subject of debate. Here we report a series of experimental x-ray absorption near-edge structure spectra at the Al K edge on a series of synthetic glasses of peralkaline composition in the CaO-Al2O3-SiO2 system, together with a general theoretical framework for data analysis based on an ab initio full multiple-scattering theory. We propose an Al/Si tetrahedral network model for aluminosilicate glasses based on distorted polyhedra, with varying both the T-O (T=Al or Si) bond lengths and the T-O-T angles, and with different Al/Si composition. This model achieves a significant agreement between experiments and simulations. In these glasses, experimental data and theoretical results concur to support a model in which Al is network former with a comparatively well ordered local medium-range order (up to 5 Å).

The Charge-Balancing Role of Calcium and Alkali Ions in Per-Alkaline Aluminosilicate Glasses.

PubMed

Thomsen, René M; Skibsted, Jørgen; Yue, Yuanzheng

2018-03-29

The structural arrangement of alkali-modified calcium aluminosilicate glasses has implications for important properties of these glasses in a wide range of industrial applications. The roles of sodium and potassium and their competition with calcium as network modifiers in peralkaline aluminosilicate glasses have been investigated by 27 Al and 29 Si MAS NMR spectroscopy. The 29 Si MAS NMR spectra are simulated using two models for distributing Al in the silicate glass network. One model assumes a hierarchical, quasi-heterogeneous aluminosilicate network, whereas the other is based on differences in relative lattice energies between Si-O-Si, Al-O-Al, and Si-O-Al linkages. A systematic divergence between these simulations and the experimental 29 Si NMR spectra is observed as a function of the sodium content exceeding that required for stoichiometric charge-balancing of the negatively charged AlO 4 tetrahedra. Similar correlations between simulations and experimental 29 Si NMR spectra cannot be made for the excess calcium content. Moreover, systematic variations in the 27 Al isotropic chemical shifts and the second-order quadrupole effect parameters, derived from the 27 Al MAS NMR spectra, are reported as a function of the SiO 2 content. These observations strongly suggest that alkali ions preferentially charge-balance AlO 4 3- as compared to alkaline earth (calcium) ions. In contrast, calcium dominates over the alkali ions in the formation of nonbridging oxygens associated with the SiO 4 tetrahedra.

Hardness of pulsed electric current sintered and hot isostatically pressed Mo(Si,Al)2

NASA Astrophysics Data System (ADS)

Tanabe, Jun

2005-05-01

We improved the reactivity and mechanical characteristics of Mo(Si,Al)2 by pulsed electric current sintering (PECS) and hot isostatic pressing (HIP), and evaluated its reaction state and mechanical characteristics using energy dispersive spectroscopy (EDS), X-ray diffraction, and a hardness test. Mo(Si,Al)2 was generated by pretreatment using a furnace, and the application of the PECS and HIP treatments further densified the sintered body, resulting in an increase in the hardness.

Metal organic vapour-phase epitaxy growth of GaN wires on Si (111) for light-emitting diode applications

PubMed Central

2013-01-01

GaN wires are grown on a Si (111) substrate by metal organic vapour-phase epitaxy on a thin deposited AlN blanket and through a thin SiNx layer formed spontaneously at the AlN/Si interface. N-doped wires are used as templates for the growth of core-shell InGaN/GaN multiple quantum wells coated by a p-doped shell. Standing single-wire heterostructures are connected using a metallic tip and a Si substrate backside contact, and the electroluminescence at room temperature and forward bias is demonstrated at 420 nm. This result points out the feasibility of lower cost nitride-based wires for light-emitting diode applications. PMID:23391377

Stress in (Al, Ga)N heterostructures grown on 6H-SiC and Si substrates byplasma-assisted molecular beam epitaxy

NASA Astrophysics Data System (ADS)

Koshelev, O. A.; Nechaev, D. V.; Sitnikova, A. A.; Ratnikov, V. V.; Ivanov, S. V.; Jmerik, V. N.

2017-11-01

The paper describes experimental results on low temperature plasma-assisted molecular beam epitaxy of GaN/AlN heterostructures on both 6H-SiC and Si(111) substrates. We demonstrate that application of migration enhanced epitaxy and metal-modulated epitaxy for growth of AlN nucleation and buffer layers lowers the screw and edge(total)threading dislocation (TD) densities down to 1.7·108 and 2·109 cm-2, respectively, in a 2.8-μm-thick GaN buffer layer grown atop of AlN/6H-SiC. The screw and total TD densities of 1.2·109 and 7.4·109 cm-2, respectively, were achieved in a 1-μm-thickGaN/AlNheterostructure on Si(111). Stress generation and relaxation in GaN/AlN heterostructures were investigated by using multi-beam optical stress sensor (MOSS) to achieve zero substrate curvature at room temperature. It is demonstrated that a 1-μm-thick GaN/AlN buffer layer grown by PA MBE provides planar substrate morphology in the case of growth on Si substrates whereas 5-μm-thick GaN buffer layers have to be used to achieve the same when growing on 6H-SiC substrates.

Nanostructures on fused silica surfaces produced by ion beam sputtering with Al co-deposition

NASA Astrophysics Data System (ADS)

Liu, Ying; Hirsch, Dietmar; Fechner, Renate; Hong, Yilin; Fu, Shaojun; Frost, Frank; Rauschenbach, Bernd

2018-01-01

The ion beam sputtering (IBS) of smooth mono-elemental Si with impurity co-deposition is extended to a pre-rippled binary compound surface of fused silica (SiO2). The dependence of the rms roughness and the deposited amount of Al on the distance from the Al source under Ar+ IBS with Al co-deposition was investigated on smooth SiO2, pre-rippled SiO2, and smooth Si surfaces, using atomic force microscopy and X-ray photoelectron spectroscopy. Although the amounts of Al deposited on these three surfaces all decreased with increasing distance from the Al target, the morphology and rms roughness of the smooth Si surface did not demonstrate a strong distance dependence. In contrast to smooth Si, the rms roughness of both the smooth and pre-rippled SiO2 surfaces exhibited a similar distance evolution trend of increasing, decreasing, and final stabilization at the distance where the results were similar to those obtained without Al co-deposition. However, the pre-rippled SiO2 surfaces showed a stronger modulation of rms roughness than the smooth surfaces. At the incidence angles of 60° and 70°, dot-decorated ripples and roof-tiles were formed on the smooth SiO2 surfaces, respectively, whereas nanostructures of closely aligned grains and blazed facets were generated on the pre-rippled SiO2, respectively. The combination of impurity co-deposition with pre-rippled surfaces was found to facilitate the formation of novel types of nanostructures and morphological growth. The initial ripples act as a template to guide the preferential deposition of Al on the tops of the ripples or the ripple sides facing the Al wedge, but not in the valleys between the ripples, leading to 2D grains and quasi-blazed grating, which offer significant promise in optical applications. The rms roughness enhancement is attributed not to AlSi, but to AlOxFy compounds originating mainly from the Al source.

AlN metal-semiconductor field-effect transistors using Si-ion implantation

NASA Astrophysics Data System (ADS)

Okumura, Hironori; Suihkonen, Sami; Lemettinen, Jori; Uedono, Akira; Zhang, Yuhao; Piedra, Daniel; Palacios, Tomás

2018-04-01

We report on the electrical characterization of Si-ion implanted AlN layers and the first demonstration of metal-semiconductor field-effect transistors (MESFETs) with an ion-implanted AlN channel. The ion-implanted AlN layers with Si dose of 5 × 1014 cm-2 exhibit n-type characteristics after thermal annealing at 1230 °C. The ion-implanted AlN MESFETs provide good drain current saturation and stable pinch-off operation even at 250 °C. The off-state breakdown voltage is 2370 V for drain-to-gate spacing of 25 µm. These results show the great potential of AlN-channel transistors for high-temperature and high-power applications.

Al or Si decorated graphene-oxide: A promising material for capture and activation of ethylene and acetylene

NASA Astrophysics Data System (ADS)

Esrafili, Mehdi D.; Dinparast, Leila

2018-06-01

In this work, quantum chemical calculations are performed to compare adsorption behavior of ethylene and acetylene molecules over Al- or Si-decorated graphene oxide (Al/Si-GO). The corresponding adsorption energies, geometrical parameters and net charge-transfer values are calculated using the dispersion-corrected DFT calculations. The obtained large adsorption energies of the Al and Si atoms over GO suggest that both Al-GO and Si-GO are stable enough to be used as a stable substrate to capture and activate ethylene or acetylene. The results show that the adsorption of C2H4 or C2H2 on Al-GO is more favorable than over Si-GO surface, mainly due to the orbital interactions between the adsorbate and surface. Also, the DFT calculations reveal that the interaction of C2H2 with both surfaces is stronger than that of C2H4. Our findings are applicable for future theoretical and experimental studies about the interaction of hydrocarbons with light metal decorated graphene-based materials as well as heterogeneous catalysis.

A Comparative Study of Thermal Conductivity and Tribological Behavior of Squeeze Cast A359/AlN and A359/SiC Composites

NASA Astrophysics Data System (ADS)

Shalaby, Essam. A. M.; Churyumov, Alexander. Yu.; Besisa, Dina. H. A.; Daoud, A.; Abou El-khair, M. T.

2017-07-01

A comparative study of thermal and wear behavior of squeeze cast A359 alloy and composites containing 5, 10 and 15 wt.% AlN and SiC particulates was investigated. It was pointed out that A359/AlN composites have a superior thermal conductivity as compared to A359 alloy or even to A359/SiC composites. Composites wear characteristics were achieved by pins-on-disk instrument over a load range of 20-60 N and a sliding speed of 2.75 m/s. Results showed that A359/AlN and A359/SiC composites exhibited higher wear resistance values compared to A359 alloy. Moreover, A359/AlN composites showed superior values of wear resistance than A359/SiC composites at relatively high loads. Friction coefficients and contact surface temperature for A359/AlN specimens decreased as AlN content increased, while they increased for A359/SiC. Investigations of worn surfaces revealed that A359/AlN composites were covered up by aluminum nitrides and iron oxides, which acted as smooth layers. However, A359/SiC composites were mainly covered only by iron oxides. The superior thermal conductivity and the significant wear resistance of the developed A359/AlN composites provided a high durable material suitable for industrial applications.

Preparation and Anodizing of SiCp/Al Composites with Relatively High Fraction of SiCp

PubMed Central

2018-01-01

By properly proportioned SiC particles with different sizes and using squeeze infiltration process, SiCp/Al composites with high volume fraction of SiC content (Vp = 60.0%, 61.2%, 63.5%, 67.4%, and 68.0%) were achieved for optical application. The flexural strength of the prepared SiCp/Al composites was higher than 483 MPa and the elastic modulus was increased from 174.2 to 206.2 GPa. With an increase in SiC volume fraction, the flexural strength and Poisson's ratio decreased with the increase in elastic modulus. After the anodic oxidation treatment, an oxidation film with porous structure was prepared on the surface of the composite and the oxidation film was uniformly distributed. The anodic oxide growth rate of composite decreased with SiC content increased and linearly increased with anodizing time. PMID:29682145

Preparation and Anodizing of SiCp/Al Composites with Relatively High Fraction of SiCp.

PubMed

Wang, Bin; Qu, Shengguan; Li, Xiaoqiang

2018-01-01

By properly proportioned SiC particles with different sizes and using squeeze infiltration process, SiCp/Al composites with high volume fraction of SiC content (Vp = 60.0%, 61.2%, 63.5%, 67.4%, and 68.0%) were achieved for optical application. The flexural strength of the prepared SiC p /Al composites was higher than 483 MPa and the elastic modulus was increased from 174.2 to 206.2 GPa. With an increase in SiC volume fraction, the flexural strength and Poisson's ratio decreased with the increase in elastic modulus. After the anodic oxidation treatment, an oxidation film with porous structure was prepared on the surface of the composite and the oxidation film was uniformly distributed. The anodic oxide growth rate of composite decreased with SiC content increased and linearly increased with anodizing time.

Crystallization kinetics of BaO-Al2O3-SiO2 glasses

NASA Technical Reports Server (NTRS)

Bansal, Narottam P.; Hyatt, Mark J.

1989-01-01

Barium aluminosilicate glasses are being investigated as matrix materials in high-temperature ceramic composites for structural applications. Kinetics of crystallization of two refractory glass compositions in the barium aluminosilicate system were studied by differential thermal analysis (DTA), X-ray diffraction (XRD), and scanning electron microscopy (SEM). From variable heating rate DTA, the crystallization activation energies for glass compositions (wt percent) 10BaO-38Al2O3-51SiO2-1MoO3 (glass A) and 39BaO-25Al2O3-35SiO2-1MoO3 (glass B) were determined to be 553 and 558 kJ/mol, respectively. On thermal treatment, the crystalline phases in glasses A and B were identified as mullite (3Al2O3-2SiO2) and hexacelsian (BaO-Al2O3-2SiO2), respectively. Hexacelsian is a high-temperature polymorph which is metastable below 1590 C. It undergoes structural transformation into the orthorhombic form at approximately 300 C accompanied by a large volume change which is undesirable for structural applications. A process needs to be developed where stable monoclinic celsian, rather than hexacelsian, precipitates out as the crystal phase in glass B.

Crystallization kinetics of BaO-Al2O3-SiO2 glasses

NASA Technical Reports Server (NTRS)

Bansal, Narottam P.; Hyatt, Mark J.

1988-01-01

Barium aluminosilicate glasses are being investigated as matrix materials in high-temperature ceramic composites for structural applications. Kinetics of crystallization of two refractory glass compositions in the barium aluminosilicate system were studied by differential thermal analysis (DTA), X-ray diffraction (XRD), and scanning electron microscopy (SEM). From variable heating rate DTA, the crystallization activation energies for glass compositions (wt percent) 10BaO-38Al2O3-51SiO2-1MoO3 (glass A) and 39BaO-25Al2O3-35SiO2-1MoO3 (glass B) were determined to be 553 and 558 kJ/mol, respectively. On thermal treatment, the crystalline phases in glasses A and B were identified as mullite (3Al2O3-2SiO2) and hexacelsian (BaO-Al2O3-2SiO2), respectively. Hexacelsian is a high-temperature polymorph which is metastable below 1590 C. It undergoes structural transformation into the orthorhombic form at approximately 300 C accompanied by a large volume change which is undesirable for structural applications. A process needs to be developed where stable monoclinic celsian, rather than hexacelsian, precipitates out as the crystal phase in glass B.

GaN transistors on Si for switching and high-frequency applications

NASA Astrophysics Data System (ADS)

Ueda, Tetsuzo; Ishida, Masahiro; Tanaka, Tsuyoshi; Ueda, Daisuke

2014-10-01

In this paper, recent advances of GaN transistors on Si for switching and high-frequency applications are reviewed. Novel epitaxial structures including superlattice interlayers grown by metal organic chemical vapor deposition (MOCVD) relieve the strain and eliminate the cracks in the GaN over large-diameter Si substrates up to 8 in. As a new device structure for high-power switching application, Gate Injection Transistors (GITs) with a p-AlGaN gate over an AlGaN/GaN heterostructure successfully achieve normally-off operations maintaining high drain currents and low on-state resistances. Note that the GITs on Si are free from current collapse up to 600 V, by which the drain current would be markedly reduced after the application of high drain voltages. Highly efficient operations of an inverter and DC-DC converters are presented as promising applications of GITs for power switching. The high efficiencies in an inverter, a resonant LLC converter, and a point-of-load (POL) converter demonstrate the superior potential of the GaN transistors on Si. As for high-frequency transistors, AlGaN/GaN heterojuction field-effect transistors (HFETs) on Si designed specifically for microwave and millimeter-wave frequencies demonstrate a sufficiently high output power at these frequencies. Output powers of 203 W at 2.5 GHz and 10.7 W at 26.5 GHz are achieved by the fabricated GaN transistors. These devices for switching and high-frequency applications are very promising as future energy-efficient electronics because of their inherent low fabrication cost and superior device performance.

Phase Diagram of the Al-Ca-Fe-Si System and Its Application for the Design of Aluminum Matrix Composites

NASA Astrophysics Data System (ADS)

Belov, Nikolay A.; Naumova, Evgeniya A.; Akopyan, Torgom K.; Doroshenko, Vitaliy V.

2018-05-01

The phase composition of aluminum alloys in the Al-Ca-Fe-Si system, including the distribution of phases in the solid state and solidification reactions, has been studied. It is shown that the addition of iron and silicon to Al-Ca alloys leads to the formation of ternary Al2CaSi2 and Al10CaFe2 compounds. The equilibrium between these compounds implies the occurrence of the quaternary L → Al + Al4Ca + Al2CaSi2 + Al10CaFe2 eutectic reaction. The alloys near this eutectic have the best structure, which is typical of aluminum matrix composites. It is shown that Al-Ca alloys can have high manufacturability during both shape casting and rolling. This is due to the combination of a narrow temperature range of solidification and a favorable morphology for the eutectic, which has a fine structure. The combination of the mechanical and physical properties of the Al-Ca eutectic-based alloys significantly exceed those of branded alloys based on aluminum-silicon eutectics.

High-Pressure Spark Plasma Sintering (HP SPS): A Promising and Reliable Method for Preparing Ti-Al-Si Alloys.

PubMed

Knaislová, Anna; Novák, Pavel; Cygan, Sławomir; Jaworska, Lucyna; Cabibbo, Marcello

2017-04-27

Ti-Al-Si alloys are prospective material for high-temperature applications. Due to low density, good mechanical properties, and oxidation resistance, these intermetallic alloys can be used in the aerospace and automobile industries. Ti-Al-Si alloys were prepared by powder metallurgy using reactive sintering, milling, and spark plasma sintering. One of the novel SPS techniques is high-pressure spark plasma sintering (HP SPS), which was tested in this work and applied to a Ti-10Al-20Si intermetallic alloy using a pressure of 6 GPa and temperatures ranging from 1318 K (1045 °C) to 1597 K (1324 °C). The low-porosity consolidated samples consist of Ti₅Si₃ silicides in an aluminide (TiAl) matrix. The hardness varied between 720 and 892 HV 5.

Effects of Strain Rate on Compressive Properties in Bimodal 7075 Al-SiCp Composite

NASA Astrophysics Data System (ADS)

Lee, Hyungsoo; Choi, Jin Hyeok; Jo, Min Chul; Jo, Ilguk; Lee, Sang-Kwan; Lee, Sunghak

2018-07-01

A 7075 Al alloy matrix composite reinforced with SiC particulates (SiCps) whose sizes were 10 and 30 μm, i.e., a bimodal Al-SiCp composite, was made by a liquid pressing process, and its quasi-static and dynamic compressive properties were evaluated by using a universal testing machine and a split Hopkinson pressure bar, respectively. Mg-Si-, Al-Fe-, and Cu-rich intermetallic compounds existed inside the Al matrix, but might not deteriorate compressive properties because of their low volume fraction (about 2.6%) which was much lower than that of SiCp. The dynamic compressive strength was higher than the quasi-static strength, and was higher in the specimen tested at 2800 s-1 than in the specimen tested at 1400 s-1 according to the strain-rate hardening. For explaining the strain data, the blocking extent of crack propagation by the Al matrix was quantitatively examined. The melting of Al matrix occurred by adiabatic heating was favorable for the improvement in compressive strain because it favorably worked for activating the shear band formation and for blocking the crack propagation, thereby leading to the excellent compressive strain (10.9-11.6%) as well as maximum compressive strength (1057-1147 MPa). Thus, the present bimodal 7075 Al-SiCp composite provides a promise for new applications to high-performance armor plates.

Effects of Strain Rate on Compressive Properties in Bimodal 7075 Al-SiCp Composite

NASA Astrophysics Data System (ADS)

Lee, Hyungsoo; Choi, Jin Hyeok; Jo, Min Chul; Jo, Ilguk; Lee, Sang-Kwan; Lee, Sunghak

2018-03-01

A 7075 Al alloy matrix composite reinforced with SiC particulates (SiCps) whose sizes were 10 and 30 μm, i.e., a bimodal Al-SiCp composite, was made by a liquid pressing process, and its quasi-static and dynamic compressive properties were evaluated by using a universal testing machine and a split Hopkinson pressure bar, respectively. Mg-Si-, Al-Fe-, and Cu-rich intermetallic compounds existed inside the Al matrix, but might not deteriorate compressive properties because of their low volume fraction (about 2.6%) which was much lower than that of SiCp. The dynamic compressive strength was higher than the quasi-static strength, and was higher in the specimen tested at 2800 s-1 than in the specimen tested at 1400 s-1 according to the strain-rate hardening. For explaining the strain data, the blocking extent of crack propagation by the Al matrix was quantitatively examined. The melting of Al matrix occurred by adiabatic heating was favorable for the improvement in compressive strain because it favorably worked for activating the shear band formation and for blocking the crack propagation, thereby leading to the excellent compressive strain (10.9-11.6%) as well as maximum compressive strength (1057-1147 MPa). Thus, the present bimodal 7075 Al-SiCp composite provides a promise for new applications to high-performance armor plates.

Ceramics reinforced metal base composite coatings produced by CO II laser cladding

NASA Astrophysics Data System (ADS)

Yang, Xichen; Wang, Yu; Yang, Nan

2008-03-01

Due to the excellent performance in high strength, anti-temperature and anti-wear, ceramics reinforced metal base composite material was used in some important fields of aircraft, aerospace, automobile and defense. The traditional bulk metal base composite materials are the expensive cost, which is limited in its industrial application. Development of laser coating of ceramics reinforced metal base composite is very interesting in economy. This paper is focused on three laser cladding ceramics coatings of SiC particle /Al matrix , Al IIO 3 powder/ Al matrix and WC + Co/mild steel matrix. Powder particle sizes are of 10-60μm. Chemical contents of aluminum matrix are of 3.8-4.0% Cu, 1.2-1.8% Mg, 0.3-0.99% Mn and balance Al. 5KW CO II laser, 5 axes CNC table, JKF-6 type powder feeder and co-axis feeder nozzle are used in laser cladding. Microstructure and performance of laser composite coatings have been respectively examined with OM,SEM and X-ray diffraction. Its results are as follows : Microstructures of 3C-,6H- and 5H- SiC particles + Al + Al 4SiC 4 + Si in SiC/Al composite, hexagonal α-Al IIO 3 + cubic γ-Al IIO 3 + f.c.c Al in Al IIO 3 powder/ Al composite and original WC particles + separated WC particles + eutectic WC + γ-Co solid solution + W IIC particles in WC + Co/steel coatings are respectively recognized. New microstructures of 5H-SiC in SiC/Al composite, cubic γ-Al IIO 3 in Al IIO 3 composite and W IIC in WC + Co/ steel composite by laser cladding have been respectively observed.

Carbon monoxide sensing properties of B-, Al- and Ga-doped Si nanowires

NASA Astrophysics Data System (ADS)

de Santiago, F.; Trejo, A.; Miranda, A.; Salazar, F.; Carvajal, E.; Pérez, L. A.; Cruz-Irisson, M.

2018-05-01

Silicon nanowires (SiNWs) are considered as potential chemical sensors due to their large surface-to-volume ratio and their possible integration into arrays for nanotechnological applications. Detection of harmful gases like CO has been experimentally demonstrated, however, the influence of doping on the sensing capacity of SiNWs has not yet been reported. For this work, we theoretically studied the surface adsorption of a CO molecule on hydrogen-passivated SiNWs grown along the [111] crystallographic direction and compared it with the adsorption of other molecules such as NO, and O2. Three nanowire diameters and three dopant elements (B, Al and Ga) were considered, and calculations were done within the density functional theory framework. The results indicate that CO molecules are more strongly adsorbed on the doped SiNW than on the pristine SiNW. The following trend was observed for the CO adsorption energies: E A[B-doped] > E A[Al-doped] > E A[Ga-doped] > E A[undoped], for all diameters. The electronic charge transfers between the SiNWs and the adsorbed CO were estimated by using a Voronoi population analysis. The CO adsorbed onto the undoped SiNWs has an electron-acceptor character, while the CO adsorbed onto the B-, Al-, and Ga-doped SiNWs exhibits an electron-donor character. Comparing these results with the ones obtained for the NO and O2 adsorption, the larger CO adsorption energy on B-doped SiNWs indicates their good selectivity towards CO. These results suggest that SiNW-based sensors of toxic gases could represent a clear and advantageous application of nanotechnology in the improvement of human quality of life.

Carbon monoxide sensing properties of B-, Al- and Ga-doped Si nanowires.

PubMed

de Santiago, F; Trejo, A; Miranda, A; Salazar, F; Carvajal, E; Pérez, L A; Cruz-Irisson, M

2018-05-18

Silicon nanowires (SiNWs) are considered as potential chemical sensors due to their large surface-to-volume ratio and their possible integration into arrays for nanotechnological applications. Detection of harmful gases like CO has been experimentally demonstrated, however, the influence of doping on the sensing capacity of SiNWs has not yet been reported. For this work, we theoretically studied the surface adsorption of a CO molecule on hydrogen-passivated SiNWs grown along the [111] crystallographic direction and compared it with the adsorption of other molecules such as NO, and O 2 . Three nanowire diameters and three dopant elements (B, Al and Ga) were considered, and calculations were done within the density functional theory framework. The results indicate that CO molecules are more strongly adsorbed on the doped SiNW than on the pristine SiNW. The following trend was observed for the CO adsorption energies: E A [B-doped] > E A [Al-doped] > E A [Ga-doped] > E A [undoped], for all diameters. The electronic charge transfers between the SiNWs and the adsorbed CO were estimated by using a Voronoi population analysis. The CO adsorbed onto the undoped SiNWs has an electron-acceptor character, while the CO adsorbed onto the B-, Al-, and Ga-doped SiNWs exhibits an electron-donor character. Comparing these results with the ones obtained for the NO and O 2 adsorption, the larger CO adsorption energy on B-doped SiNWs indicates their good selectivity towards CO. These results suggest that SiNW-based sensors of toxic gases could represent a clear and advantageous application of nanotechnology in the improvement of human quality of life.

Influence of air-particle deposition protocols on the surface topography and adhesion of resin cement to zirconia.

PubMed

Sarmento, Hugo R; Campos, Fernanda; Sousa, Rafael S; Machado, Joao P B; Souza, Rodrigo O A; Bottino, Marco A; Ozcan, Mutlu

2014-07-01

This study evaluated the influence of air-particle abrasion protocols on the surface roughness (SR) of zirconia and the shear bond strength (SBS) of dual-polymerized resin cement to this ceramic. Sintered zirconia blocks (n = 115) (Lava, 3M ESPE) were embedded in acrylic resin and polished. The specimens were divided according to the 'particle type' (Al: 110 µm Al2O3; Si: 110 µm SiO2) and 'pressure' factors (2.5 or 3.5 bar) (n = 3 per group): (a) Control (no air-abrasion); (b) Al2.5; (c) Si2.5; (d) Al3.5; (e) Si3.5. SR (Ra) was measured 3-times from each specimen after 20 s of air-abrasion (distance: 10 mm) using a digital optical profilometer. Surface topography was evaluated under SEM analyses. For the SBS test, 'particle type', 'pressure' and 'thermocycling' (TC) factors were considered (n = 10; n = 10 per group): Control (no air-abrasion); Al2.5; Si2.5; Al3.5; Si3.5; ControlTC; Al2.5TC; Si2.5TC; Al3.5TC; Si3.5TC. After silane application, resin cement (Panavia F2.0) was bonded and polymerized. Specimens were thermocycled (6.000 cycles, 5-55°C) and subjected to SBS (1 mm/min). Data were analyzed using ANOVA, Tukey's and Dunnett tests (5%). 'Particle' (p = 0.0001) and 'pressure' (p = 0.0001) factors significantly affected the SR. All protocols significantly increased the SR (Al2.5: 0.45 ± 0.02; Si2.5: 0.39 ± 0.01; Al3.5: 0.80 ± 0.01; Si3.5: 0.64 ± 0.01 µm) compared to the control group (0.16 ± 0.01 µm). For SBS, only 'particle' factor significantly affected the results (p = 0.015). The SiO2 groups presented significantly higher SBS results than Al2O3 (Al2.5: 4.78 ± 1.86; Si2.5: 7.17 ± 2.62; Al3.5: 4.97 ± 3.74; Si3.5: 9.14 ± 4.09 MPa) and the control group (3.67 ± 3.0 MPa). All TC specimens presented spontaneous debondings. SEM analysis showed that Al2O3 created damage in zirconia in the form of grooves, different from those observed with SiO2 groups. Air-abrasion with 110 µm Al2O3 resulted in higher roughness, but air-abrasion protocols with SiO2 promoted better adhesion.

Solidification and Morphological Evolution of Al-Si Eutectics in Convector-Diffusive Conditions

NASA Technical Reports Server (NTRS)

Singh, N. B.; Su, Ching Hua; Arnold, Brad; Choa, Fow-Sen; Mandal, K. D.

2017-01-01

The Al-Si material system is an important and has been studied for over half century with a focus on industrial applications in high strength and high conductivity alloys. A great deal of researches have been focused on controlling the morphology and hence performance through the addition of small impurities and by processing conditions. Most of the structure-property correlations are based on the post solidified micromorphology and growth conditions. This material system is unique and has been explored for heat spreader, controlling coefficient of expansion by adjusting composition of silicon and in designing composites. The Al-Si system is very interesting system for understanding the dendritic (Al-rich side) eutectic transition. Recently this system has been of great interest because of its applications in designing heat spreader, low temperature flux to grow SiC large substrates and in controlling the coefficient of expansion of Al-based alloys. We have performed extensive experiments to understand eutectic transition and to understand the morphological evolution in presence of impurities. We will discuss the results of dendritic transition into faceted long grains in convector-diffusive conditions. In this presentation we will present morphological transition in presence of carbon impurity and development of novel morphology.

Effect of alumina on grain refinement of Al-Si hypereutectic alloys

NASA Astrophysics Data System (ADS)

Majhi, J.; Sahoo, S. K.; Patnaik, S. C.; Sarangi, B.; Sachan, N. K.

2018-03-01

The size, volume fraction and distribution of primary as well as eutectic silicon affect the mechanical properties of the Al-Si hypereutectic alloys. It is very difficult for the simultaneous refinement and modification of primary and secondary Si particles in hypereutectic Al-Si alloys through traditional processes. This paper explores the role of γ-Al2O3 nanoparticles on Si particles in the course of solidification in hypereutectic Al-Si alloys at particular pouring temperature. The present study involves incorporation of varying contents dispersed γ-Al2O3 nanoparticles into a molten base metal during stir casting and followed by solidification. It has been reported that the synthesized composites having good interfacial bonding (wetting) between the dispersed phase and the liquid matrix was achieved in order to provide improved mechanical properties of the composite. The cast product of hypereutectic Al-16Si alloy with the reinforcement of nanoparticles, illustrated a significant improvement in both wear behaviour and hardness. The dry sliding wear test has been performed on a group of specimens with varying parameters (different loads and sliding velocities) in a pin on disc wear testing machine. Moreover, the wear rate and specific wear rate also affected in different load and different sliding velocities. However in XRD analysis of the samples, the enhancement of wear resistance as well as hardness was due to the formation of brittle phases like SiO2, Al2O3 and Al-rich intermetallic compounds. The hardness value of the materials increases nearly 6% in addition to increase in the density of only 0.8%. As per literature, the large plate eutectic Si particles were modified in to the fine core particles and it acquires enough potential for various applications.

Effect of Multi-Scale Thermoelectric Magnetic Convection on Solidification Microstructure in Directionally Solidified Al-Si Alloys Under a Transverse Magnetic Field

NASA Astrophysics Data System (ADS)

Li, Xi; Du, Dafan; Gagnoud, Annie; Ren, Zhongming; Fautrelle, Yves; Moreau, Rene

2014-11-01

The influence of a transverse magnetic field ( B < 1 T) on the solidification structure in directionally solidified Al-Si alloys was investigated. Experimental results indicate that the magnetic field caused macrosegregation, dendrite refinement, and a decrease in the length of the mushy zone in both Al-7 wt pct Si alloy and Al-7 wt pct Si-1 wt pct Fe alloys. Moreover, the application of the magnetic field is capable of separating the Fe-rich intermetallic phases from Al-7 wt pct Si-1 wt pct Fe alloy. Thermoelectric magnetic convection (TEMC) was numerically simulated during the directional solidification of Al-Si alloys. The results reveal that the TEMC increases to a maximum () when the magnetic field reaches a critical magnetic field strength (), and then decreases as the magnetic field strength increases further. The TEMC exhibits the multi-scales effects: the and values are different at various scales, with decreasing and increasing as the scale decreases. The modification of the solidification structure under the magnetic field should be attributed to the TEMC on the sample and dendrite scales.

Interface Engineering for Atomic Layer Deposited Alumina Gate Dielectric on SiGe Substrates.

PubMed

Zhang, Liangliang; Guo, Yuzheng; Hassan, Vinayak Vishwanath; Tang, Kechao; Foad, Majeed A; Woicik, Joseph C; Pianetta, Piero; Robertson, John; McIntyre, Paul C

2016-07-27

Optimization of the interface between high-k dielectrics and SiGe substrates is a challenging topic due to the complexity arising from the coexistence of Si and Ge interfacial oxides. Defective high-k/SiGe interfaces limit future applications of SiGe as a channel material for electronic devices. In this paper, we identify the surface layer structure of as-received SiGe and Al2O3/SiGe structures based on soft and hard X-ray photoelectron spectroscopy. As-received SiGe substrates have native SiOx/GeOx surface layers, where the GeOx-rich layer is beneath a SiOx-rich surface. Silicon oxide regrows on the SiGe surface during Al2O3 atomic layer deposition, and both SiOx and GeOx regrow during forming gas anneal in the presence of a Pt gate metal. The resulting mixed SiOx-GeOx interface layer causes large interface trap densities (Dit) due to distorted Ge-O bonds across the interface. In contrast, we observe that oxygen-scavenging Al top gates decompose the underlying SiOx/GeOx, in a selective fashion, leaving an ultrathin SiOx interfacial layer that exhibits dramatically reduced Dit.

Study of molybdenum-aluminum interdiffusion kinetics and contact resistance for VLSI applications

NASA Astrophysics Data System (ADS)

Singh, R. N.; Brown, D. M.; Kim, M. J.; Smith, G. A.

1985-12-01

Interdiffusion barrier characteristics of molybdenum thin film with aluminum-1% Si is studied between 733 and 763 K via sheet and contact resistance measurements, Rutherford backscattering spectrometry, secondary ion mass spectrometry, and x-ray diffraction analysis. The results indicate that thermal annealing of Mo/Al-1% Si thin film couples leads to MoAl12 compound formation initially as a nonplanar front, but extensive annealing results in complete transformation of Al-1% Si to MoAl12 and a significant increase in contact resistance. The interdiffusion kinetics is diffusion controlled and shows parabolic time dependence, incubation periods, and extremely high activation energy value of 5.9 eV. The incubation periods and an high activation energy values are explained by the presence of silicon precipitates at the Mo/Al-1% Si interface. Implications of these observations to VLSI device characteristics are discussed and a safe time-temperature processing regime is proposed.

Interaction of the dopants Mg and Si in Al xGa 1- x As/GaAs heterolayers (MOVPE): application to DQW laser structures

NASA Astrophysics Data System (ADS)

Korte, L.; Treichler, R.; Schreiber, M.; Tanner, Ch.; Kristen, G.; Hanke, C.; Weimann, G.

1991-01-01

The interaction of Mg and Si has been studied in GaAs/Al xGa 1- xAs DQW laser structures with a 50 nm Si diffusion barrier. The samples have been exposed to capless heat treatments at 860°C and under Si/SiO 2 and Si 3N 4 cap layers, and were analysed by SIMS. The Mg diffusion is highly dependent on the surface conditions during heating. A Si barrier is effective for temperature treatments under H 2/AsH 3 and Si/SiO 2. It is not effective under a Si 3N 4 cap where we detected very fast Mg diffusion. The Mg diffusion behaviour is discussed in terms of Si-Mg interaction and the influence of crystal defects.

High-κ Al2O3 material in low temperature wafer-level bonding for 3D integration application

NASA Astrophysics Data System (ADS)

Fan, J.; Tu, L. C.; Tan, C. S.

2014-03-01

This work systematically investigated a high-κ Al2O3 material for low temperature wafer-level bonding for potential applications in 3D microsystems. A clean Si wafer with an Al2O3 layer thickness of 50 nm was applied as our experimental approach. Bonding was initiated in a clean room ambient after surface activation, followed by annealing under inert ambient conditions at 300 °C for 3 h. The investigation consisted of three parts: a mechanical support study using the four-point bending method, hermeticity measurements using the helium bomb test, and thermal conductivity analysis for potential heterogeneous bonding. Compared with samples bonded using a conventional oxide bonding material (SiO2), a higher interfacial adhesion energy (˜11.93 J/m2) and a lower helium leak rate (˜6.84 × 10-10 atm.cm3/sec) were detected for samples bonded using Al2O3. More importantly, due to the excellent thermal conductivity performance of Al2O3, this technology can be used in heterogeneous direct bonding, which has potential applications for enhancing the performance of Si photonic integrated devices.

Hydrogen adsorption in metal-decorated silicon carbide nanotubes

NASA Astrophysics Data System (ADS)

Singh, Ram Sevak; Solanki, Ankit

2016-09-01

Hydrogen storage for fuel cell is an active area of research and appropriate materials with excellent hydrogen adsorption properties are highly demanded. Nanotubes, having high surface to volume ratio, are promising storage materials for hydrogen. Recently, silicon carbide nanotubes have been predicted as potential materials for future hydrogen storage application, and studies in this area are ongoing. Here, we report a systematic study on hydrogen adsorption properties in metal (Pt, Ni and Al) decorated silicon carbide nanotubes (SiCNTs) using first principles calculations based on density functional theory. The hydrogen adsorption properties are investigated by calculations of adsorption energy, electronic band structure, density of states (DOS) and Mulliken charge population analysis. Our findings show that hydrogen adsorptions on Pt, Ni and Al-decorated SiCNTs undergo spontaneous exothermic reactions with significant modulation of electronic structure of SiCNTs in all cases. Importantly, according to the Mulliken charge population analysis, dipole-dipole interaction causes chemisorptions of hydrogen in Pt, Ni and Al decorated SiCNTs with formation of chemical bonds. The study is a platform for the development of metal decorated SiCNTs for hydrogen adsorption or hydrogen storage application.

The electronic response of pristine, Al and Si doped BC2N nanotubes to a cathinone molecule: Computational study

NASA Astrophysics Data System (ADS)

Nejati, Kamellia; Vessally, Esmail; Delir Kheirollahi Nezhad, Parvaneh; Mofid, Hadi; Bekhradnia, Ahmadreza

2017-12-01

Cathinone (CT) is a psychoactive drug which its abuse is linked to several deaths worldwide. Here, we investigated the electronic response of BC2N nanotubes to the CT drug, using density functional theory calculations. Our results indicate that the CT drug is adsorbed on the pristine tube from its -NH2 group with ad adsorption energy about -14.6 kcal/mol with no electronic response. To overcome this problem, we doped the tube with Al or Si atom. Both of the Al and Si dopants increase the tube sensitivity and strengthen the interaction. Our calculations demonstrate that despite the high sensitivity of the Al-doped BC2N nanotube to the CT drug, it suffers from a very long recovery time which makes it unsuitable for application in CT sensors. But the calculated recovery time for the Si-doped BC2N nanotube is predicted to be about 0.27 s, which is short and desirable. Also, we showed that the Si-doped tube can be used in the humidity condition and at the presence of some gases including H2, O2, N2, and CO2. It was concluded that Si-doped BC2N nanotubes may be promising candidate for application in the CT sensors which benefit form a short recovery time, high sensitivity, and selectivity.

Compositionally modulated multilayer diamond-like carbon coatings with AlTiSi multi-doping by reactive high power impulse magnetron sputtering

NASA Astrophysics Data System (ADS)

Dai, Wei; Gao, Xiang; Liu, Jingmao; Kwon, Se-Hun; Wang, Qimin

2017-12-01

Diamond-like carbon (DLC) coatings with AlTiSi multi-doping were prepared by a reactive high power impulse magnetron sputtering with using a gas mixture of Ar and C2H2 as precursor. The composition, microstructure, compressive stress, and mechanical property of the as-deposited DLC coatings were studied systemically by using SEM, XPS, TEM, Raman spectrum, stress-tester, and nanoindentation as a function of the Ar fraction. The results show that the doping concentrations of the Al, Ti and Si atoms increased as the Ar fraction increased. The doped Ti and Si preferred to bond with C while the doped Al mainly existed in oxidation state without bonding with C. As the doping concentrations increased, TiC carbide nanocrystals were formed in the DLC matrix. The microstructure of coatings changed from an amorphous feature dominant AlTiSi-DLC to a carbide nanocomposite AlTiSi-DLC with TiC nanoparticles embedding. In addition, the coatings exhibited the compositionally modulated multilayer consisting of alternate Al-rich layer and Al-poor layer due to the rotation of the substrate holder and the diffusion behavior of the doped Al which tended to separate from C and diffuse towards the DLC matrix surface owing to its weak interactions with C. The periodic Al-rich layer can effectively release the compressive stress of the coatings. On the other hand, the hard TiC nanoparticles were conducive to the hardness of the coatings. Consequently, the DLC coatings with relatively low residual stress and high hardness could be acquired successfully through AlTiSi multi-doping. It is believed that the AlCrSi multi-doping may be a good way for improving the comprehensive properties of the DLC coatings. In addition, we believe that the DLC coatings with Al-rich multilayered structure have a high oxidation resistance, which allows the DLC coatings application in high temperature environment.

X-ray tomography investigation of intensive sheared Al–SiC metal matrix composites

DOE Office of Scientific and Technical Information (OSTI.GOV)

De Giovanni, Mario; Warnett, Jason M.; Williams, Mark A.

2015-12-15

X-ray computed tomography (XCT) was used to characterise three dimensional internal structure of Al–SiC metal matrix composites. The alloy composite was prepared by casting method with the application of intensive shearing to uniformly disperse SiC particles in the matrix. Visualisation of SiC clusters as well as porosity distribution were evaluated and compared with non-shearing samples. Results showed that the average particle size as well as agglomerate size is smaller in sheared sample compared to conventional cast samples. Further, it was observed that the volume fraction of porosity was reduced by 50% compared to conventional casting, confirming that the intensive shearingmore » helps in deagglomeration of particle clusters and decrease in porosity of Al–SiC metal matrix composites. - Highlights: • XCT was used to visualise 3D internal structure of Al-SiC MMC. • Al-SiC MMC was prepared by casting with the application of intensive shearing. • SiC particles and porosity distribution were evaluated. • Results show shearing deagglomerates particle clusters and reduces porosity in MMC.« less

High-Temperature Oxidation Behavior of Al-Co-Cr-Ni-(Fe or Si) Multicomponent High-Entropy Alloys

NASA Astrophysics Data System (ADS)

Butler, T. M.; Alfano, J. P.; Martens, R. L.; Weaver, M. L.

2015-01-01

High-entropy alloys (HEAs) are a class of alloys that are being considered for a number of applications. In the present study, the microstructures and 1050°C oxidation behaviors of two HEAs, Al10Cr22.5Co22.5Ni22.5Fe22.5 (at.%) and Al20Cr25Co25Ni25Si5 have been investigated along with Al15Cr10Co35Ni35Si5, which is a high-temperature shape-memory alloy. Oxide formation occurred via selective oxidation in a manner that was consistent with the oxide formation model devised by Giggins and Pettit for model Ni-Cr-Al alloys. The lower Al content alloy formed an external Cr2O3 scale and an internal subscale consisting of Al2O3 and AlN precipitates. The higher Al content alloys exhibited smaller mass gains and formed external Al2O3 scales without any internal oxidation of the alloys.

TiAlN/TiAlON/Si{sub 3}N{sub 4} tandem absorber for high temperature solar selective applications

DOE Office of Scientific and Technical Information (OSTI.GOV)

Barshilia, Harish C.; Selvakumar, N.; Rajam, K. S.

2006-11-06

A tandem absorber of TiAlN/TiAlON/Si{sub 3}N{sub 4} is prepared using a magnetron sputtering process. The graded composition of the individual component layers of the tandem absorber produces a film with a refractive index increasing from the surface to the substrate, which exhibits a high absorptance (0.95) and a low emittance (0.07). The tandem absorber is stable in air up to 600 deg. C for 2 h, indicating its importance for high temperature solar selective applications. The thermal stability of the tandem absorber is attributed to high oxidation resistance and microstructural stability of the component materials at higher temperatures.

Precursor routes to quaternary intermetallics: Synthesis, crystal structure, and physical properties of clathrate-II Cs{sub 8}Na{sub 16}Al{sub 24}Si{sub 112}

DOE Office of Scientific and Technical Information (OSTI.GOV)

Wei, Kaya; Dong, Yongkwan; Nolas, George S., E-mail: gnolas@usf.edu

A new quaternary clathrate–II composition, Cs{sub 8}Na{sub 16}Al{sub 24}Si{sub 112}, was synthesized by kinetically controlled thermal decomposition (KCTD) employing both NaSi and NaAlSi as the precursors and CsCl as a reactive flux. The crystal structure and composition of Cs{sub 8}Na{sub 16}Al{sub 24}Si{sub 112} were investigated using both Rietveld refinement and elemental analysis, and the temperature dependent transport properties were investigated. Our results indicate that KCTD with multiple precursors is an effective method for the synthesis of multinary inorganic phases that are not easily accessible by traditional solid-state synthesis or crystal growth techniques. - Graphical abstract: Quaternary Cs{sub 8}Na{sub 16}Al{sub 24}S{submore » 112} clathrate–II was synthesized for the first time by kinetically controlled thermal decomposition (KCTD) employing a NaSi+NaAlSi precursor mixture with CsCl as the reactive flux, and the structural and transport properties were investigated. Our approach demonstrates a new synthetic pathway for the synthesis of multinary inorganic compounds. This work reports the exploration of a new clathrate composition as this class of materials continues to be of interest for thermoelectrics and other energy-related applications.« less

Rapid ultrasound-induced transient-liquid-phase bonding of Al-50Si alloys with Zn interlayer in air for electrical packaging application.

PubMed

Wang, Qian; Chen, Xiaoguang; Zhu, Lin; Yan, Jiuchun; Lai, Zhiwei; Zhao, Pizhi; Bao, Juncheng; Lv, Guicai; You, Chen; Zhou, Xiaoyu; Zhang, Jian; Li, Yuntao

2017-01-01

Al-50Si alloys were joined by rapid ultrasound-induced transient-liquid-phase bonding method using Zn foil as interlayer at 390°C in air, below the melt point of interlayer. The fracture of oxide films along the edge of Si particles led to contact and inter-diffusion between aluminum substrate and Zn interlayer, and liquefied Zn-Al alloys were developed. The width of Zn-Al alloys gradually decreased with increasing the ultrasonic vibration time due to liquid squeezing out and accelerated diffusion. A stage of isothermal solidification existed, and the completion time was significantly shortened. In the liquid metal, the acoustic streaming and ultrasonic cavitations were induced. As the process developed, much more Si particles, which were particulate-reinforced phases of Al-50Si, gradually migrated to the center of soldering seam. The highest average shear strength of joints reached to 94.2MPa, and the fracture mainly occurred at the base metal. Copyright © 2016 Elsevier B.V. All rights reserved.

Secondary Al-Si-Mg High-pressure Die Casting Alloys with Enhanced Ductility

NASA Astrophysics Data System (ADS)

Bösch, Dominik; Pogatscher, Stefan; Hummel, Marc; Fragner, Werner; Uggowitzer, Peter J.; Göken, Mathias; Höppel, Heinz Werner

2015-03-01

Al-Si-Mg-based secondary cast alloys are attractive candidates for thin-walled high-pressure die castings for applications in the transport industry. The present study investigates the effect of manganese additions at high cooling rates on microstructure, mechanical properties, and on the dominating fracture mechanisms of alloy AlSi10Mg with an elevated iron concentration. Systematic variations of the Mn content from 0.20 to 0.85 wt pct at a constant Fe content of 0.55 wt pct illustrate the key changes in type, phase fraction, and shape of the Fe-containing intermetallic phases, and the corresponding influence on the alloy's ductility. For high-pressure die casting (HPDC), an optimal range of the Mn content between 0.40 and 0.60 wt pct, equivalent to a Mn/Fe ratio of approximately 1, has been identified. At these Mn and Fe contents, the high cooling rates obtained in HPDC result in the formation of fine and homogeneously distributed α-Al15(Fe,Mn)3Si2 phase, and crack initiation is transferred from AlFeSi intermetallics to eutectic silicon. The study interprets the microstructure-property relationship in the light of thermodynamic calculations which reveal a significant increase in undercooling of the α-Al15(Fe,Mn)3Si2 phase with increased Mn content. It concludes that the interdependence of the well-defined Mn/Fe ratio and the high cooling rate in HPDC can generate superior ductility in secondary AlSi10Mg cast alloys.

Suppression of Leakage Current of Metal-Insulator-Semiconductor Ta2O5 Capacitors with Al2O3/SiON Buffer Layer

NASA Astrophysics Data System (ADS)

Tonomura, Osamu; Miki, Hiroshi; Takeda, Ken-ichi

2011-10-01

An Al2O3/SiO buffer layer was incorporated in a metal-insulator-semiconductor (MIS) Ta2O5 capacitor for dynamic random access memory (DRAM) application. Al2O3 was chosen for the buffer layer owing to its high band offset against silicon and oxidation resistance against increase in effective oxide thickness (EOT). It was clarified that post-deposition annealing in nitrogen at 800 °C for 600 s increased the band offset between Al2O3 and the lower electrode and decreased leakage current by two orders of magnitude at 1 V. Furthermore, we predicted and experimentally confirmed that there was an optimized value of y in (Si3N4)y(SiO2)(1-y), which is 0.58, for minimizing the leakage current and EOT of SiON. To clarify the oxidation resistance and appropriate thickness of Al2O3, a TiN/Ta2O5/Al2O3/SiON/polycrystalline-silicon capacitor was fabricated. It was confirmed that the lower electrode was not oxidized during the crystallization annealing of Ta2O5. By setting the Al2O3 thickness to 3.4 nm, the leakage current is lowered below the required value with an EOT of 3.6 nm.

Relationship between chemistry, microstructure and mechanical properties of alpha-silicon aluminum oxynitride

NASA Astrophysics Data System (ADS)

Shuba, Roman

The aim of this thesis was to improve the mechanical properties of Y-alpha-SiAlON ceramics by controlling microstructure and tailoring grain boundary composition. Three properties of importance for engineering applications were targeted: strength retention and oxidation resistance at high temperature, fracture toughness at room temperature, and machinability. As a result of this work, several ceramics with one or more of the above properties optimized have been developed. The performance of Si3N4/SiAlON-based ceramics at high (>1000 degree C) temperature is generally limited by the softening of grain-boundary glass. Refractory alpha-SiAlONs was obtained by three methods: reducing residual liquid by minimizing nitride powder oxidation during processing, promoting liquid/SiAlON conversion by adding excess AlN, and improving refractoriness by incorporating La2O3 into glass. Ceramics thus, obtained featured excellent room-temperature strength (1050 MPa) and high-temperature strength (650 MPa at 1300 degree C), as well as good oxidation resistance. In all cases grain growth was inhibited, which resulted in a relatively low toughness (5--7 MPa x m1/2). In-situ toughened Y-alpha-SiAlON (9 MPa x m1/2) was obtained through growth of large elongated grains with low debonding strength. This was achieved by introducing seed crystals to the starting powder mixtures, in addition to using sintering aids and dopants. Additives modified the properties of grain boundary glass, while dopants lowered the strength of glass/grain interface. Through the use of nanosized turbostratic BN precursor obtained via pyrolysis of melamine borate salt, which yielded finely dispersed hexagonal BN particles in alpha-SiAlON, high-strength (800 MPa) Y-alpha-SiAlON/BN composites, machinable using WC/Co tools, were also fabricated.

Effect of neutron irradiation on defect evolution in Ti 3SiC 2 and Ti 2AlC

DOE PAGES

Tallman, Darin J.; He, Lingfeng; Garcia-Diaz, Brenda L.; ...

2015-10-23

Here, we report on the characterization of defects formed in polycrystalline Ti 3SiC 2 and Ti 2AlC samples exposed to neutron irradiation – up to 0.1 displacements per atom (dpa) at 350 ± 40 °C or 695 ± 25 °C, and up to 0.4 dpa at 350 ± 40 °C. Black spots are observed in both Ti 3SiC 2 and Ti 2AlC after irradiation to both 0.1 and 0.4 dpa at 350 °C. After irradiation to 0.1 dpa at 695 °C, small basal dislocation loops, with a Burgers vector of b = 1/2 [0001] are observed in both materials. Atmore » 9 ± 3 and 10 ± 5 nm, the loop diameters in the Ti 3SiC 2 and Ti 2AlC samples, respectively, were comparable. At 1 × 10 23 loops/m 3, the dislocation loop density in Ti 2AlC was ≈1.5 orders of magnitude greater than in Ti 3SiC 2, at 3 x 10 21 loops/m3. After irradiation at 350 °C, extensive microcracking was observed in Ti 2AlC, but not in Ti 3SiC 2. The room temperature electrical resistivities increased as a function of neutron dose for all samples tested, and appear to saturate in the case of Ti 3SiC 2. The MAX phases are unequivocally more neutron radiation tolerant than the impurity phases TiC and Al 2O 3. Based on these results, Ti 3SiC 2 appears to be a more promising MAX phase candidate for high temperature nuclear applications than Ti 2AlC.« less

Polymer-silicon nanosheet composites: bridging the way to optoelectronic applications

NASA Astrophysics Data System (ADS)

Lyuleeva, Alina; Helbich, Tobias; Rieger, Bernhard; Lugli, Paolo

2017-04-01

The fabrication of electronic devices from sensitive, functional, two-dimensional (2D) nanomaterials with anisotropic structural properties has attracted much attention. Many theoretical and experimental studies have been performed; however, such materials have not been used in applications. In this context, the focus has shifted toward the study and synthesis of new materials. Freestanding hydrogen-terminated silicon nanosheets (SiNSs) are a new class of material with outstanding (opto)electronic properties (e.g. photoluminescence at approximately 510 nm) (Nakano 2014 J. Ceram. Soc. Japan 122 748). SiNSs are promising candidates for use in nanoelectronic devices and flexible electronics. Additional reasons for interest in such nanomaterials are their structural anisotropy and the fact that they are made from silicon. Here, we present examples for the application of functionalized SiNS-based composites as active materials for photonic sensors. The implementation of SiNSs in a covalent nanocomposite not only improves their stability but also facilitates subsequent device fabrication. Thus, SiNSs can be used in a straightforward setup preparation procedure. We show that the modification of novel Si-based 2D nanosheets with selected organic components not only opens a new field of photosensitive applications but also improves the processability of these nanosheets (Niu et al 2014 Sci. Rep. 4 4810, Chimene et al 2015 Adv. Mater. 27 7261).

On compensation in Si-doped AlN

NASA Astrophysics Data System (ADS)

Harris, Joshua S.; Baker, Jonathon N.; Gaddy, Benjamin E.; Bryan, Isaac; Bryan, Zachary; Mirrielees, Kelsey J.; Reddy, Pramod; Collazo, Ramón; Sitar, Zlatko; Irving, Douglas L.

2018-04-01

Controllable n-type doping over wide ranges of carrier concentrations in AlN, or Al-rich AlGaN, is critical to realizing next-generation applications in high-power electronics and deep UV light sources. Silicon is not a hydrogenic donor in AlN as it is in GaN; despite this, the carrier concentration should be controllable, albeit less efficiently, by increasing the donor concentration during growth. At low doping levels, an increase in the Si content leads to a commensurate increase in free electrons. Problematically, this trend does not persist to higher doping levels. In fact, a further increase in the Si concentration leads to a decrease in free electron concentration; this is commonly referred to as the compensation knee. While the nature of this decrease has been attributed to a variety of compensating defects, the mechanism and identity of the predominant defects associated with the knee have not been conclusively determined. Density functional theory calculations using hybrid exchange-correlation functionals have identified VAl+n SiAl complexes as central to mechanistically understanding compensation in the high Si limit in AlN, while secondary impurities and vacancies tend to dominate compensation in the low Si limit. The formation energies and optical signatures of these defects in AlN are calculated and utilized in a grand canonical charge balance solver to identify carrier concentrations as a function of Si content. The results were found to qualitatively reproduce the experimentally observed compensation knee. Furthermore, these calculations predict a shift in the optical emissions present in the high and low doping limits, which is confirmed with detailed photoluminescence measurements.

Hydrogen release at metal-oxide interfaces: A first principle study of hydrogenated Al/SiO2 interfaces

NASA Astrophysics Data System (ADS)

Huang, Jianqiu; Tea, Eric; Li, Guanchen; Hin, Celine

2017-06-01

The Anode Hydrogen Release (AHR) mechanism at interfaces is responsible for the generation of defects, that traps charge carriers and can induce dielectric breakdown in Metal-Oxide-Semiconductor Field Effect Transistors. The AHR has been extensively studied at Si/SiO2 interfaces but its characteristics at metal-silica interfaces remain unclear. In this study, we performed Density Functional Theory (DFT) calculations to study the hydrogen release mechanism at the typical Al/SiO2 metal-oxide interface. We found that interstitial hydrogen atoms can break interfacial Alsbnd Si bonds, passivating a Si sp3 orbital. Interstitial hydrogen atoms can also break interfacial Alsbnd O bonds, or be adsorbed at the interface on aluminum, forming stable Alsbnd Hsbnd Al bridges. We showed that hydrogenated Osbnd H, Sisbnd H and Alsbnd H bonds at the Al/SiO2 interfaces are polarized. The resulting bond dipole weakens the Osbnd H and Sisbnd H bonds, but strengthens the Alsbnd H bond under the application of a positive bias at the metal gate. Our calculations indicate that Alsbnd H bonds and Osbnd H bonds are more important than Sisbnd H bonds for the hydrogen release process.

Design of optimum rear passivated submicron Al corrugation in very thin textured silicon back-contact back-junction solar cell for absorption enhancement up to near-infrared region

NASA Astrophysics Data System (ADS)

Abdullah, Mohd Faizol; Hashim, Abdul Manaf

2018-01-01

The optical reflection and absorption in a very thin textured back-contact back-junction silicon (Si) solar cell are investigated. The introduction of nanotexturing on front Si surface has significantly increased the absorption in the ultraviolet (UV)-visible region with a low reflection of below 0.05. The introduction of rear surface corrugation formed by a combination of SiO2-Al has successfully enhanced the absorption up to near-infrared (NI) region. The optimum crest width, periodicity, and trough depth of corrugation are derived, which lead to high absorption up to 0.97. The internal reflection and scattering that occur near the plasmonic Al corrugation are contributing to the local maximum electric field intensity in both transverse magnetic (TM) and transverse electric (TE) modes. Since there is no perpendicular electric component in TE mode, a coupling of electric field within a corrugation trough is not observed but is only observed in TM mode. On 10-μm-thick Si, the application of Si nanocones (NCs) and optimized rear Al corrugation results in 56% improvement in photogenerated current, Jsc, compared to the reference flat Si. Thinning down the Si to only 2 μm severely limits the Jsc. Our optimized Al corrugation manages to compensate net 9% and 7% Jsc loss in 2-μm Si in respect to 10-μm-thick Si for the model with and without front Si NCs. The results seem to reveal the optimum design of rear Al corrugation for the absorption enhancement from UV up to NI wavelength region.

Ordered hexagonal mesoporous aluminosilicates with low Si/Al ratio: synthesis, characterization, and catalytic application.

PubMed

Liu, Aifeng; Che, Hongwei; Liu, Chuanzhi; Fu, Quanrong; Jiang, Ruijiao; Wang, Cheng; Wang, Liang

2014-06-01

Ordered hexagonal mesoporous aluminosilicates with lower Si/Al ratio below 5 have been successfully synthesized via the co-assembly of preformed aluminosilicate precursors with Gemini surfactant [C12H25N+(CH3)2(CH2)6N+(CH3)2C12H25] x 2Br(-) as the template. Powder X-ray diffraction, transmission electron microscopy, scanning electron microscopy, N2 adsorption-desorption isotherm measurements, Fourier transform infrared spectroscopy, 27Al nuclear magnetic resonance, thermogravimetric analysis, and temperature-programmed desorption of cyclohexylamine are employed to characterize the resulting samples. The phenol alkylation reaction is carried out to evaluate their catalytic performances. These studies indicate that the sample with a low Si/Al ratio of 3 still retains a highly ordered hexagonal mesoporous structure. And it also possesses the highest acidity of 0.96 mmol among the samples with lower Si/Al ratios below 5 due to its higher specific surface area together with more content of tetrahedrally coordinated Al in the framework. The catalytic tests confirm that the acidity of the samples plays a key role in determining their catalytic performances.

Measurement of key resonances for the 24Al(p ,γ )25Si reaction rate using in-beam γ -ray spectroscopy

NASA Astrophysics Data System (ADS)

Longfellow, B.; Gade, A.; Brown, B. A.; Richter, W. A.; Bazin, D.; Bender, P. C.; Bowry, M.; Elman, B.; Lunderberg, E.; Weisshaar, D.; Williams, S. J.

2018-05-01

Energy levels and branching ratios for the rp-process nucleus 25Si were determined from the reactions 9Be(26Si,25Si)X and 9Be(25Al,25Si)X using in-beam γ -ray spectroscopy with both high-efficiency and high-resolution detector arrays. Proton-unbound states at 3695(14) and 3802(11) keV were identified and assigned tentative spins and parities based on comparison to theory and the mirror nucleus. The 24Al(p ,γ )25Si reaction rate was calculated using the experimental states and states from charge-dependent USDA and USDB shell-model calculations with downward shifts of the 1 s1 /2 proton orbital to account for the observed Thomas-Ehrman shift, leading to a factor of 10-100 increase in rate for the temperature region of 0.22 GK as compared to a previous calculation. These shifts may be applicable to neighboring nuclei, impacting the proton capture rates in this region of the chart.

Scanning and transmission electron microscopy study of the microstructural changes occurring in aluminium matrix composites reinforced with SiC particles during casting and welding: interface reactions

PubMed

Urena; Gomez De Salazar JM; Gil; Escalera; Baldonedo

1999-11-01

Processing of aluminium matrix composites (AMCs), especially those constituted by a reactive system such as Al-SiC, presents great difficulties which limit their potential applications. The interface reactivity between SiC and molten Al generates an aluminium carbide which degrades the composite properties. Scanning and transmission electron microscopes equipped with energy-dispersive X-ray spectroscopes are essential tools for determining the structure and chemistry of the Al-SiC interfaces in AMCs and changes occurring during casting and arc welding. In the present work, an aluminium-copper alloy (AA2014) reinforced with three different percentages of SiC particles was subjected to controlled remelting tests, at temperatures in the range 750-900 degrees C for 10 and 30 min. Arc welding tests using a tungsten intert gas with power inputs in the range 850-2000 W were also carried out. The results of these studies showed that during remelting there is preferential SiC particle consumption with formation of Al4C3 by interface reaction between the solid SiC particle and the molten aluminium matrix. The formation of Al4C3 by the same mechanism has also been detected in molten pools of arc welded composites. However, in this case there was formation of an almost continuous layer of Al4C3, which protects the particle against further consumption, and formation of aciculate aluminium carbide on the top weld. Both are formed by fusion and dissolution of the SiC in molten aluminium followed by reaction and precipitation of the Al4C3 during cooling.

Tunable color and energy transfer in single-phase white-emitting Ca{sub 20}Al{sub 26}Mg{sub 3}Si{sub 3}O{sub 68}:Ce{sup 3+},Dy{sup 3+} phosphors for UV white light-emitting diodes

DOE Office of Scientific and Technical Information (OSTI.GOV)

Yuan, Bo; Song, Yanhua; Sheng, Ye

Ce{sup 3+} and/or Dy{sup 3+} activated Ca{sub 20}Al{sub 26}Mg{sub 3}Si{sub 3}O{sub 68} phosphors were synthesized by high temperature solid state reaction and their luminescent properties were studied. There are two emissions peaking at 407 and 577 nm in the emission spectra of Ca{sub 20}Al{sub 26}Mg{sub 3}Si{sub 3}O{sub 68}:Ce{sup 3+}, Dy{sup 3+}, which are due to the transitions of Ce{sup 3+} and Dy{sup 3+} ions, respectively. More importantly, the effective energy transfer from Ce{sup 3+} to Dy{sup 3+} ions has been confirmed and investigated by emission/excitation spectra and luminescent decay behaviors. Furthermore, the energy level scheme and mechanism of energy transfermore » were investigated and it was demonstrated to be resonant type via dipole–dipole reaction. Under the excitation of 345 nm, the emitting color can change from blue to white by adjusting the relative doping concentration of Ce{sup 3+} and Dy{sup 3+} ions, indicating that the phosphors Ca{sub 20}Al{sub 26}Mg{sub 3}Si{sub 3}O{sub 68}:Ce{sup 3+}, Dy{sup 3+} are promising single-phase white-emitting phosphors for application in pc-white LEDs. - Highlights: • The Ca{sub 20}Al{sub 26}Mg{sub 3}Si{sub 3}O{sub 68}:Ce{sup 3+},Dy{sup 3+} are novel luminescent materials that have not been reported before. • The crystal structure of Ca{sub 20}Al{sub 26}Mg{sub 3}Si{sub 3}O{sub 68} and energy transfer from Ce{sup 3+} to Dy{sup 3+} were investigated. • The emission color of Ca{sub 20}Al{sub 26}Mg{sub 3}Si{sub 3}O{sub 68}:Ce{sup 3+},Dy{sup 3+} can be adjusted from blue to white. • The phosphors have great application value in WLEDs as a kind of blue-to-white emitting phosphors.« less

Combination of experimental and numerical methods for mechanical characterization of Al-Si alloys

NASA Astrophysics Data System (ADS)

Kruglova, A.; Roland, M.; Diebels, S.; Mücklich, F.

2017-10-01

In general, mechanical properties of Al-Si alloys strongly depend on the morphology and arrangement of microconstituents, such as primary aluminium dendrites, silicon particles, etc. Therefore, a detailed characterization of morphological and mechanical properties of the alloys is necessary to better understand the relations between the underlined properties and to tailor the material’s microstructure to the specific application needs. The mechanical characterization usually implies numerical simulations and mechanical tests, which allow to investigate the influence of different microstructural aspects on different scales. In this study, the uniaxial tension and compression tests have been carried out on Al-Si alloys having different microstructures. The mechanical behavior of the alloys has been interpreted with respect to the morphology of the microconstituents and has been correlated with the results of numerical simulations. The advantages and limitations of the experimental and numerical methods have been disclosed and the importance of combining both techniques for the interpretation of the mechanical behavior of Al-Si alloys has been shown. Thereby, it has been suggested that the density of Si particles and the size of Al dendrites are more important for the strengthening of the alloys than the size-shape features of the eutectic Si induced by the modification.

Radiation effects and tolerance mechanism in β-eucryptite

NASA Astrophysics Data System (ADS)

Narayanan, Badri; Reimanis, Ivar E.; Huang, Hanchen; Ciobanu, Cristian V.

2013-01-01

Previous studies on Li-silicates have shown that these materials are resistant to radiation damage even in extreme physical and chemical environments, and are thus promising solid-state breeder materials in fusion reactors. Here, we focus on β-eucryptite as a member of Li-Al silicate class of ceramics with potential for nuclear applications, and study the atomic-scale processes induced by radiation. Using molecular dynamics simulations based on a reactive force field, we have found that upon radiation dosage of 0.21 displacements-per-atom or less, the structure largely retains its long-range order while exhibiting (a) disordering of the Li atoms, (b) distortion of the Si and Al tetrahedra defined as the change in their oxygen-coordination number, and (c) tilting of the Si and Al tetrahedra with respect to one another. We find that Si tetrahedra that distort to SiO3 during exposure to radiation recover significantly upon thermal relaxation, and provide the mechanism for this recovery. This mechanism consists in the tilting of AlO5 polyhedra formed upon exposure so as to satisfy the oxygen-coordination of distorted Si tetrahedra. Doubling the dosage results in a significant increase of the concentration of Si-Al antisite defects, which renders the tolerance mechanism inefficient and leads to amorphization.

Partially Ionized Beam Deposition of Silicon-Dioxide and Aluminum Thin Films - Defects Generation.

NASA Astrophysics Data System (ADS)

Wong, Justin Wai-Chow

1987-09-01

Detect formation in SiO_2 and Al thin films and interfaces were studied using a partially ionized beam (PIB) deposition technique. The evaporated species (the deposition material) were partially ionized to give an ion/atom ratio of <=q0.1% and the substrate was biased at 0-5kV during the deposition. The results suggest that due to the ion bombardment, stoichiometric SiO_2 films can be deposited at a low substrate temperature (~300 ^circC) and low oxygen pressure (<=q10^{-4} Torr). Such deposition cannot be achieved using conventional evaporation-deposition techniques. However, traps and mobile ions were observed in the oxide and local melt-down was observed when a sufficiently high electric field was applied to the film. For the PIB Al deposition on the Si substrate, stable Al/Si Schottky contact was formed when the substrate bias was <=q1kV. For a substrate bias of 2.5kV, the capacitance of the Al/Si interface increased dramatically. A model of self-ion implantation with a p-n junction created by the Al^+ ion implantation was proposed and tested to explain the increase of the interface capacitance. Several deep level states at the Al/Si interface were observed using Deep Level Transient Spectroscopy (DLTS) technique when the film was deposited at a bias of 3kV. The PIB Al films deposited on the Si substrate showed unusually strong electromigration resistance under high current density operation. This phenomenon was explained by the highly oriented microstructure of the Al films created by the self-ion bombardment during deposition. These findings show that PIB has potential applications in a number of areas, including low temperature thin film deposition, and epitaxial growth of thin films in the microelectronics thin film industry.

Thermodynamic Model of the Na-Al-Si-O-F Melts

NASA Astrophysics Data System (ADS)

Dolejs, D.; Baker, D. R.

2004-05-01

Fluorine is a common volatile element in magmatic-hydrothermal systems, but its solution mechanisms in highly polymerized silicate melts are poorly known. We have developed a thermodynamic model for fluorosilicate liquids which links experimentally determined phase equilibria and spectroscopic information on melt structure. The model is applicable to crystallization of fluoride minerals or fluoride-silicate immiscibility in natural felsic melts. Configurational properties of the liquid are defined by mixing of alkali fluoride, polyhedral aluminofluoride and silicofluoride species and non-bridging terminations of the silicate network. Abundances of individual structural species are described by a homogeneous equilibrium, representing melt depolymerization: F- (free) + O0 (bridging) = F0 (terminal) + O- (non-bridging), which is a replacement of one oxygen bridge, Si-O-Si, by two terminations, Si-F | Na-O-Si. In cryolite-bearing systems, the self-dissociation of octahedral aluminofluoride complexes: Na3[AlF6] = Na[AlF4] + 2 NaF, and the short-range order between (O,F)-corners and (Si,NaAl)-centers of tetrahedra: Si-O-Si + 2 [NaAl]-F = [NaAl]-O-[NaAl] + 2 Si-F, represent two additional interaction mechanisms. Portrayal of these equilibria in ternary Thompson reaction space allows to decrease the number of interaction mechanisms by linearly combining melt depolymerization with tetrahedral short-range order. In this formulation, the interaction parameters are incorporated directly in configurational properties, thus the complete melt speciation can be calculated, and the activities of any macroscopic species are readily derived. The model has been applied to subsystems of the Na2O-NaAlO2-SiO2-F2O-1 compositional space. Activity-composition relationships in the villiaumite-sodium silicate binaries require clustering of silicate tetrahedra in fluoride solvent. Phase-equilibria in cryolite-nepheline and cryolite-albite systems illustrate an overall increase of Na3AlF6 self-association in both joins. On the other hand, melt depolymerization by fluorine controls depression of silicate liquidi. The present model is useful for modeling the differentiation of peralkaline fluorine-bearing magmas and provides a starting point for predicting halide, carbonate, sulfide or sulfate saturation in natural melts.

Growth and characterization of InSb on (1 0 0) Si for mid-infrared application

NASA Astrophysics Data System (ADS)

Jia, Bo Wen; Tan, Kian Hua; Loke, Wan Khai; Wicaksono, Satrio; Yoon, Soon Fatt

2018-05-01

Monolithic integration of InSb on (1 0 0) Si is a practical approach to realizing on-chip mid-infrared photonic devices. An InSb layer was grown on a (1 0 0) Si substrate using an AlSb/GaSb buffer containing InSb quantum dots (QDs). The growth process for the buffer involved the growth of GaSb on Si using an interfacial misfit array, followed by InSb QDs on AlSb to decrease the density of microtwins. InSb layers were separately grown on AlSb and GaSb surfaces to compare the effect of different interfacial misfit arrays. The samples were characterized using transmission electron microscopy and X-ray diffraction to determine the structural properties of the buffer and InSb layers. The InSb on the AlSb sample exhibited higher crystal quality than the InSb on GaSb sample due to a more favorable arrangement of interfacial misfit dislocations. Hall measurements of unintentionally doped InSb layers demonstrated a higher carrier mobility in the InSb on the AlSb sample than in InSb on GaSb. Growing InSb on AlSb also improved the photoresponsivity of InSb as a photoconductor on Si.

Metallographic assessment of Al-12Si high-pressure die casting escalator steps.

PubMed

Vander Voort, George Frederic; Suárez-Peña, Beatriz; Asensio-Lozano, Juan

2014-10-01

A microstructural characterization study was performed on high-pressure die cast specimens extracted from escalator steps manufactured from an Al-12 wt.% Si alloy designed for structural applications. Black and white, color light optical imaging and scanning electron microscopy techniques were used to conduct the microstructural analysis. Most regions in the samples studied contained globular-rosette primary α-Al grains surrounded by an Al-Si eutectic aggregate, while primary dendritic α-Al grains were present in the surface layer. This dendritic microstructure was observed in the regions where the melt did not impinge directly on the die surface during cavity filling. Consequently, microstructures in the surface layer were nonuniform. Utilizing physical metallurgy principles, these results were analyzed in terms of the applied pressure and filling velocity during high-pressure die casting. The effects of these parameters on solidification at different locations of the casting are discussed.

Fabrication and electrical characterization of Al/diazo compound containing polyoxy chain/p-Si device structure

NASA Astrophysics Data System (ADS)

Birel, Ozgul; Kavasoglu, Nese; Kavasoglu, A. Sertap; Dincalp, Haluk; Metin, Bengul

2013-03-01

Diazo-compounds are important class of chemical compounds in terms of optical and electronic properties which make them potentially attractive for device applications. Diazo compound containing polyoxy chain has been deposited on p-Si. Current-voltage characteristics of Al/diazo compound containing polyoxy chain/p-Si structure present rectifying behaviour. The Schottky barrier height (SBH), diode factor (n), reverse saturation current (Io), interface state density (Nss) of Al/diazo compound containing polyoxy chain/p-Si structure have been calculated from experimental forward bias current-voltage data measured in the temperature range 100-320 K and capacitance-voltage data measured at room temperature and 1 MHz. The calculated values of SBH have ranged from 0.041 and 0.151 eV for the high and low temperature regions. Diode factor values fluctuate between the values 14 and 18 with temperature. Such a high diode factors stem from disordered interface layer in a junction structure as stated by Brötzmann et al. [M. Brötzmann, U. Vetter, H. Hofsäss, J. Appl. Phys. 106 (2009) 063704]. The calculated values of saturation current have ranged from 3×10-11 A to 2.79×10-7 A and interface state density have ranged from 5×1011 eV-1 cm-2 and 4×1013 eV-1 cm-2 as temperature increases. Results show that Al/diazo compound containing polyoxy chain/p-Si structure is a valuable candidate for device applications in terms of low reverse saturation current and low interface state density.

Spectroscopic characterization of novel multilayer mirrors intended for astronomical and laboratory applications

NASA Astrophysics Data System (ADS)

Ragozin, Eugene N.; Mednikov, Konstantin N.; Pertsov, Andrei A.; Pirozhkov, Alexander S.; Reva, Anton A.; Shestov, Sergei V.; Ul'yanov, Artem S.; Vishnyakov, Eugene A.

2009-05-01

We report measurements of the reflection spectra of (i) concave (spherical and parabolic) Mo/Si, Mg/Si, and Al/Zr multilayer mirrors (MMs) intended for imaging solar spectroscopy in the framework of the TESIS/CORONAS-FOTON Satellite Project and of (ii) an aperiodic Mo/Si MM optimized for maximum uniform reflectivity in the 125-250 Å range intended for laboratory applications. The reflection spectra were measured in the configuration of a transmission grating spectrometer employing the radiation of a tungsten laser-driven plasma as the source. The function of detectors was fulfilled by backside-illuminated CCDs coated with Al or Zr/Si multilayer absorption filters. High-intensity second-order interference reflection peaks at wavelengths of about 160 Å were revealed in the reflection spectra of the 304-Å Mo/Si MMs. By contrast, the second-order reflection peak in the spectra of the new-generation narrow-band (~12 Å FWHM) 304-Å Mg/Si MMs is substantially depressed. Manifestations of the NEXAFS structure of the L2, 3 absorption edges of Al and Al2O3 were observed in the spectra recorded. The broadband Mo/Si MM was employed as the focusing element of spectrometers in experiments involving (i) the charge exchange of multiply charged ions with the donor atoms of a rare-gas jet; (ii) the spectroscopic characterization of a debris-free soft X-ray radiation source excited by Nd laser pulses in a Xe jet (iii) near-IR-to-soft-X-ray frequency conversion (double Doppler effect) occurring in the retroreflection from the relativistic electron plasma wake wave (flying mirror) driven by a multiterawatt laser in a pulsed helium jet.

Thin film multilayer filters for solar EUV telescopes.

PubMed

Chkhalo, N I; Drozdov, M N; Kluenkov, E B; Kuzin, S V; Lopatin, A Ya; Luchin, V I; Salashchenko, N N; Tsybin, N N; Zuev, S Yu

2016-06-10

Al, with a passband in the wavelength range of 17-60 nm, and Zr, with a passband in the wavelength range of 6.5-17 nm, thin films on a support grid or support membrane are frequently used as UV, visible, and near-IR blocking filters in solar observatories. Although they possess acceptable optical performance, these filters also have some shortcomings such as low mechanical strength and low resistance to oxidation. These shortcomings hinder meeting the requirements for filters of future telescopes. We propose multilayer thin film filters on the basis of Al, Zr, and other materials with improved characteristics. It was demonstrated that stretched multilayer films on a support grid with a mesh size up to 5 mm can withstand vibration loads occurring during spacecraft launch. A large mesh size is preferable for filters of high-resolution solar telescopes, since it allows image distortion caused by light diffraction on the support grid to be avoided. We have investigated the thermal stability of Al/Si and Zr/Si multilayers assuming their possible application as filters in the Intergelioprobe project, in which the observation of coronal plasma will take place close to the Sun. Zr/Si films show high thermal stability and may be used as blocking filters in the wavelength range of 12.5-17 nm. Al/Si films show lower thermal stability: a significant decrease in the film's transmission in the EUV spectral range and an increase in the visible spectrum have been observed. We suppose that the low thermal stability of Al/Si films restricts their application in the Intergelioprobe project. Thus, there is a lack of filters for the wavelength range of λ>17  nm. Be/Si and Cr/Si filters have been proposed for the wavelength range near 30.4 nm. Although these filters have lower transparency than Al/Si, they are superior in thermal stability. Multilayer Sc/Al filters with relatively high transmission at a wavelength of 58.4 nm (HeI line) and simultaneously sufficient rejection in the wavelength range near 30.4 nm (HeII line) have been fabricated. They are planned to be used in the project KORTES, whose telescopes will have an EUV channel at 58.4 nm.

High-Temperature Active Soldering of SiC Particle-Reinforced Al-MMC Using a Novel ZnAlGaMgTi Filler Metal

NASA Astrophysics Data System (ADS)

Chen, Biqiang; Zhang, Guifeng; Zhang, Linjie; Xu, Tingting

2017-10-01

In order to broaden the application of SiC particle-reinforced aluminum matrix composite in electronics packaging, newly developed ZnAlGaMgTi filler with a low melting point of 418-441 °C was utilized as filler metal for active soldering of aluminum matrix composites (70 vol.%, SiCp/Al-MMCs) for the first time. The effect of loading pressure on joint properties of ZnAlGaMgTi active filler was investigated. The experimental results indicated that novel filler could successfully solder Al-MMCs, and the presence of Mg in the filler enhanced the penetration of Zn, while the forming of Zn-rich barrier layer influenced the active element MPD (melting point depressant) diffusion into parent composite, and the bulk-like (Mg-Si)-rich phase and Ti-containing phase were readily observed at the interface and bond seam. With the increase in loading pressure, the runout phenomenon appeared more significant, and the filler foil thickness and the Zn penetration depth varied pronouncedly. Sound joints with maximum shear strength of 29.6 MPa were produced at 480 °C at 1 MPa, and the crack occurred adjacent to the boundary of SiC particle and then propagated along the interface. A novel model describing the significant mutual diffusion of Al and Zn atoms between the parent material and solder was proposed.

Spectral Exploration of Calcium Accumulation in Organic Matter in Gray Desert Soil from Northwest China

PubMed Central

Wang, Ping; Ma, Yucui; Wang, Xihe; Jiang, Hong; Liu, Hua; Ran, Wei; Shen, Qirong

2016-01-01

Little attention has been paid to the accumulation of soil organic matter (SOM) in the fringes of the mid-latitude desert. In this paper, soil samples from a long-term field experiment conducted from 1990 to 2013 at a research station in Urumqi, China by different fertilizer treatments, were used to determine soil properties and soil dissolved organic matter (DOM) by chemical analysis, fluorescence excitation emission matrix (EEM) spectroscopy, and high resolution-transmission electron microscopy (HR-TEM). The binding features of DOM under the addition of Ca2+ were analyzed using a two-dimensional (2D) Fourier transform infrared (FTIR) spectrometer further to explore the response of the DOM to increasing concentrations of Ca2+. Long-term application of chemical fertilizers and goat manure increased soil organic carbon (SOC) by 1.34- and 1.86-fold, respectively, relative to the non-fertilized control (8.95g.kg-1). Compared with the control, application of chemical fertilizers and manure significantly increased the concentrations of Ca, Mg, Si, humic and fulvic acid-like substances in DOM but decreased the amounts of trivalent metals (Al and Fe) and protein-like substances. Although crystalline Al/Fe nanoparticles and amorphous or short-range-order Si/Al nanoparticles existed in all DOM samples, crystalline Ca/Si nanoparticles were predominant in the samples treated with goat manure. Although organic matter and Si-O-containing nanoparticles were involved in the binding of Ca2+ to DOM, application of chemical fertilizers weakened Ca2+ association with components of the amide II group (1510 cm-1) and Si-O linkage (1080 cm-1), whereas application of goat manure enhanced the affinity of Ca2+ for Si-O linkage. Our results suggested that the enrichment of Ca in gray desert soil possibly helps accumulate SOM by forming crystalline Ca/Si nanoparticles in addition to Ca2+ and organic matter complexes. PMID:26751962

Spectral Exploration of Calcium Accumulation in Organic Matter in Gray Desert Soil from Northwest China.

PubMed

Wang, Ping; Ma, Yucui; Wang, Xihe; Jiang, Hong; Liu, Hua; Ran, Wei; Shen, Qirong

2016-01-01

Little attention has been paid to the accumulation of soil organic matter (SOM) in the fringes of the mid-latitude desert. In this paper, soil samples from a long-term field experiment conducted from 1990 to 2013 at a research station in Urumqi, China by different fertilizer treatments, were used to determine soil properties and soil dissolved organic matter (DOM) by chemical analysis, fluorescence excitation emission matrix (EEM) spectroscopy, and high resolution-transmission electron microscopy (HR-TEM). The binding features of DOM under the addition of Ca(2+) were analyzed using a two-dimensional (2D) Fourier transform infrared (FTIR) spectrometer further to explore the response of the DOM to increasing concentrations of Ca(2+). Long-term application of chemical fertilizers and goat manure increased soil organic carbon (SOC) by 1.34- and 1.86-fold, respectively, relative to the non-fertilized control (8.95 g.kg(-1)). Compared with the control, application of chemical fertilizers and manure significantly increased the concentrations of Ca, Mg, Si, humic and fulvic acid-like substances in DOM but decreased the amounts of trivalent metals (Al and Fe) and protein-like substances. Although crystalline Al/Fe nanoparticles and amorphous or short-range-order Si/Al nanoparticles existed in all DOM samples, crystalline Ca/Si nanoparticles were predominant in the samples treated with goat manure. Although organic matter and Si-O-containing nanoparticles were involved in the binding of Ca(2+) to DOM, application of chemical fertilizers weakened Ca(2+) association with components of the amide II group (1510 cm(-1)) and Si-O linkage (1080 cm(-1)), whereas application of goat manure enhanced the affinity of Ca(2+) for Si-O linkage. Our results suggested that the enrichment of Ca in gray desert soil possibly helps accumulate SOM by forming crystalline Ca/Si nanoparticles in addition to Ca(2+) and organic matter complexes.

The effect of H2O gas on volatilities of planet-forming major elements. I - Experimental determination of thermodynamic properties of Ca-, Al-, and Si-hydroxide gas molecules and its application to the solar nebula

NASA Technical Reports Server (NTRS)

Hashimoto, Akihiko

1992-01-01

The vapor pressures of Ca(OH)2(g), Al(OH)3(g), and Si(OH)4(g) molecules in equilibrium with solid calcium-, aluminum, and silicon-oxides, respectively, were determined, and were used to derive the heats of formation and entropies of these species, which are expected to be abundant under the currently postulated physical conditions in the primordial solar nebula. These data, in conjunction with thermodynamic data from literature, were used to calculate the relative abundances of M, MO(x), and M(OH)n gas species and relative volatilities of Fe, Mg, Si, Ca, and Al for ranges of temperature, total pressure, and H/O abundance ratio corresponding to the plausible ranges of physical conditions in the solar nebula. The results are used to explain how Ca and Al could have evaporated from Ca,Al-rich inclusions in carbonaceous chondrites, while Si, Mg, and Fe condensed onto them during the preaccretion alteration of CAIs.

High Temperature Aerogels for Thermal Protection Systems

NASA Technical Reports Server (NTRS)

Hurwitz, Frances I.; Mbah, Godfrey C.

2008-01-01

High temperature aerogels in the Al2O3-SiO2 system are being investigated as possible constituents for lightweight integrated thermal protection system (TPS) designs for use in supersonic and hypersonic applications. Gels are synthesized from ethoxysilanes and AlCl3.6H2O, using an epoxide catalyst. The influence of Al:Si ratio, solvent, water to metal and water to alcohol ratios on aerogel composition, morphology, surface area, and pore size distribution were examined, and phase transformation on heat treatment characterized. Aerogels have been fabricated which maintain porous, fractal structures after brief exposures to 1000 C. Incorporation of nanofibers, infiltration of aerogels into SiC foams, use of polymers for crosslinking the aerogels, or combinations of these, offer potential for toughening and integration of TPS with composite structure. Woven fabric composites having Al2O3-SiO2 aerogels as a matrix also have been fabricated. Continuing work is focused on reduction in shrinkage and optimization of thermal and physical properties.

Study on adsorption of rhodamine B onto Beta zeolites by tuning SiO2/Al2O3 ratio.

PubMed

Cheng, Zhi-Lin; Li, Yan-Xiang; Liu, Zan

2018-02-01

The exploration of the relationship between zeolite composition and adsorption performance favored to facilitate its better application in removal of the hazardous substances from water. The adsorption capacity of rhodamine B (RB) onto Beta zeolite from aqueous solution was reported. The relationship between SiO 2 /Al 2 O 3 ratio and adsorption capacity of Beta zeolite for RB was explored. The structure and physical properties of Beta zeolites with various SiO 2 /Al 2 O 3 ratios were determined by XRD, FTIR, TEM, BET, UV-vis and so on characterizations. The adsorption behavior of rhodamine B onto Beta zeolite matched to Langmuir adsorption isotherm and more suitable description for the adsorption kinetics was a pseudo-second-order reaction model. The maximum adsorption capacity of the as-prepared Beta zeolite with SiO 2 /Al 2 O 3 = 18.4 was up to 27.97mg/g. Copyright © 2017 Elsevier Inc. All rights reserved.

Role of Al2O3 thin layer on improving the resistive switching properties of Ta5Si3-based conductive bridge random accesses memory device

NASA Astrophysics Data System (ADS)

Kumar, Dayanand; Aluguri, Rakesh; Chand, Umesh; Tseng, Tseung-Yuen

2018-04-01

Ta5Si3-based conductive bridge random access memory (CBRAM) devices have been investigated to improve their resistive switching characteristics for their application in future nonvolatile memory technology. Changes in the switching characteristics by the addition of a thin Al2O3 layer of different thicknesses at the bottom electrode interface of a Ta5Si3-based CBRAM devices have been studied. The double-layer device with a 1 nm Al2O3 layer has shown improved resistive switching characteristics over the single layer one with a high on/off resistance ratio of 102, high endurance of more than 104 cycles, and good retention for more than 105 s at the temperature of 130 °C. The higher thermal conductivity of Al2O3 over Ta5Si3 has been attributed to the enhanced switching properties of the double-layer devices.

Synthesis of Vertically-Aligned Carbon Nanotubes from Langmuir-Blodgett Films Deposited Fe Nanoparticles on Al2O3/Al/SiO2/Si Substrate.

PubMed

Takagiwa, Shota; Kanasugi, Osamu; Nakamura, Kentaro; Kushida, Masahito

2016-04-01

In order to apply vertically-aligned carbon nanotubes (VA-CNTs) to a new Pt supporting material of polymer electrolyte fuel cell (PEFC), number density and outer diameter of CNTs must be controlled independently. So, we employed Langmuir-Blodgett (LB) technique for depositing CNT growth catalysts. A Fe nanoparticle (NP) was used as a CNT growth catalyst. In this study, we tried to thicken VA-CNT carpet height and inhibit thermal aggregation of Fe NPs by using Al2O3/Al/SiO2/Si substrate. Fe NP LB films were deposited on three typed of substrates, SiO2/Si, as-deposited Al2O3/Al/SiO2/Si and annealed Al2O3/Al/SiO2/Si at 923 K in Ar atmosphere of 16 Pa. It is known that Al2O3/Al catalyzes hydrocarbon reforming, inhibits thermal aggregation of CNT growth catalysts and reduces CNT growth catalysts. It was found that annealed Al2O3/Al/SiO2/Si exerted three effects more strongly than as-deposited Al2O3/Al/SiO2/Si. VA-CNTs were synthesized from Fe NPs-C16 LB films by thermal chemical vapor deposition (CVD) method. As a result, at the distance between two nearest CNTs 28 nm or less, VA-CNT carpet height on annealed Al2O3/Al/SiO2/Si was about twice and ten times thicker than that on SiO2/Si and that on as-deposited Al2O3/Al/SiO2/Si, respectively. Moreover, distribution of CNT outer diameter on annealed Al2O3/Al/SiO2/Si was inhibited compared to that on SiO2/Si. These results suggest that since thermal aggregation of Fe NPs is inhibited, catalyst activity increases and distribution of Fe NP size is inhibited.

Slow crack growth in SiC platelet reinforced Al{sub 2}O{sub 3} composite

DOE Office of Scientific and Technical Information (OSTI.GOV)

Belmonte, M.; Moya, J.S.; Miranzo, P.

1996-05-15

Ceramic matrix composites with enhanced toughness are at present projected for many structural applications such as high temperature components in gas turbine, structures for hypersonic aircraft and bioprosthetic devices. The incorporation of a SiC dispersed second phase in form of whisker or platelets into an alumina matrix has allowed to improve material toughness, thermal shock resistance and R-curve behavior. Recently, considerable interest in the acquisition of slow crack growth (SCG) data for ceramic materials has arisen in order to predict the service lifetime of brittle components. Non-oxide ceramics such as SiC and Si{sub 3}N{sub 4} are extremely resistant to crackmore » growth at low temperatures, whereas oxide ceramics are susceptible to stress corrosion because of the chemical interaction between water and stressed cracks. Up to date, there are not many papers devoted to SCG of SiC whiskers reinforced Al{sub 2}O{sub 3} composites and none about SiC platelets used as reinforcement. The objective of the present work has been to evaluate the slow crack growth in a Al{sub 2}O{sub 3}/SiC-platelet composite by double torsion testing analysis. The results will be compared with those obtained for SiC whisker reinforced Al{sub 2}O{sub 3} composite tested using the same conditions.« less

Growth of quaternary InAlGaN barrier with ultrathin thickness for HEMT application

NASA Astrophysics Data System (ADS)

Li, Zhonghui; Li, Chuanhao; Peng, Daqing; Zhang, Dongguo; Dong, Xun; Pan, Lei; Luo, Weike; Li, Liang; Yang, Qiankun

2018-06-01

Quaternary InAlGaN barriers with thickness of 7 nm for HEMT application were grown on 3-inch semi-insulating 4H-SiC substrates by metal organic chemical vapor deposition (MOCVD). Focused on growth mechanism of the InAlGaN barrier, the surface morphology and characteristics of InAlGaN/AlN/GaN heterostructures were studied with different growth parameters, including the temperature, Al/Ga ratio and chamber pressure. Among the as-grown samples, high electron mobility is consistent with smooth surface morphology, while high crystalline quality of the quaternary barrier is confirmed by measurements of Photoluminescence (PL) and Mercury-probe Capacity-Voltage (C-V). The recommended heterostructures without SiN passivation is characterized by mobility of 1720 cm2/(V·s), 2DEG density of 1.71*1013 cm-2, sheet resistance of about 210 Ω/□ with a smooth surface morphology and moderate tensile state, specially applied for microwave devices.

Effects of Alloying Elements on Room and High Temperature Tensile Properties of Al-Si Cu-Mg Base Alloys =

NASA Astrophysics Data System (ADS)

Alyaldin, Loay

In recent years, aluminum and aluminum alloys have been widely used in automotive and aerospace industries. Among the most commonly used cast aluminum alloys are those belonging to the Al-Si system. Due to their mechanical properties, light weight, excellent castability and corrosion resistance, these alloys are primarily used in engineering and in automotive applications. The more aluminum is used in the production of a vehicle, the less the weight of the vehicle, and the less fuel it consumes, thereby reducing the amount of harmful emissions into the atmosphere. The principal alloying elements in Al-Si alloys, in addition to silicon, are magnesium and copper which, through the formation of Al2Cu and Mg2Si precipitates, improve the alloy strength via precipitation hardening following heat treatment. However, most Al-Si alloys are not suitable for high temperature applications because their tensile and fatigue strengths are not as high as desired in the temperature range 230-350°C, which are the temperatures that are often attained in automotive engine components under actual service conditions. The main challenge lies in the fact that the strength of heat-treatable cast aluminum alloys decreases at temperatures above 200°C. The strength of alloys under high temperature conditions is improved by obtaining a microstructure containing thermally stable and coarsening-resistant intermetallics, which may be achieved with the addition of Ni. Zr and Sc. Nickel leads to the formation of nickel aluminide Al3Ni and Al 9FeNi in the presence of iron, while zirconium forms Al3Zr. These intermetallics improve the high temperature strength of Al-Si alloys. Some interesting improvements have been achieved by modifying the composition of the base alloy with additions of Mn, resulting in an increase in strength and ductility at both room and high temperatures. Al-Si-Cu-Mg alloys such as the 354 (Al-9wt%Si-1.8wt%Cu-0.5wt%Mg) alloys show a greater response to heat treatment as a result of the presence of both Mg and Cu. These alloy types display excellent strength values at both low and high temperatures. Additions of Zr, Ni, Mn and Sc would be expected to maintain the performance of these alloys at still higher temperatures. Six alloys were prepared using 0.2 wt% Ti grain-refined 354 alloy, comprising alloy R (354 + 0.25wt% Zr) considered as the base or reference alloy, and five others, viz., alloys S, T, U, V, and Z containing various amounts of Ni, Mn, Sc and Zr, added individually or in combination. For comparison purposes, another alloy L was prepared from 398 (Al-16%Si) alloy, reported to give excellent high temperature properties, to which the same levels of Zr and Sc additions were made, as in alloy Z. Tensile test bars were prepared from the different 354 alloys using an ASTM B-108 permanent mold. The test bars were solution heat treated using a one-step or a multi-step solution heat treatment, followed by quenching in warm water, and then artificial aging employing different aging treatments (T5, T6, T62 and T7). The one-step (or SHT 1) solution treatment consisted of 5 h 495 °C) and the multi-step (or SHT 2) solution treatment comprised 5 h 495°C + 2 h 515°C + 2 h 530°C. Thermal analysis of the various 354 alloy melts was carried out to determine the sequence of reactions and phases formed during solidification under close-to-equilibrium cooling conditions. The main reactions observed comprised formation of the alpha-Al dendritic network at 598°C followed by precipitation of the Al-Si eutectic and post-eutectic beta-Al5FeSi phase at 560°C; Mg2Si phase and transformation of the beta-phase into pi-Al8Mg 3FeSi6 phase at 540°C and 525°C; and lastly, precipitation of Al2Cu and Q-Al5Mg8Cu2Si 6 almost simultaneously at 498°C and 488°C. Larger sizes of AlFeNi and AlCuNi phase particles were observed in T alloy with its higher Ni content of 4 wt%, when compared to those seen in S alloy at 2% Ni content. Mn addition in Alloy U helps in reducing the detrimental effect of the beta-iron phase by replacing it with the less-detrimental Chinese script alpha-Al 15(Fe,Mn)3Si2 phase and sludge particles.

In Situ Study of Microstructure Evolution in Solidification of Hypereutectic Al-Si Alloys with Application of Thermal Analysis and Neutron Diffraction

NASA Astrophysics Data System (ADS)

Sediako, Dimitry G.; Kasprzak, Wojciech

2015-09-01

Understanding of the kinetics of solid-phase evolution in solidification of hypereutectic aluminum alloys is a key to control their as-cast microstructure and resultant mechanical properties, and in turn, to enhance the service characteristics of actual components. This study was performed to evaluate the solidification kinetics for three P-modified hypereutectic Al-19 pct Si alloys: namely, Al-Si binary alloy and with the subsequent addition of 2.8 pct Cu and 2.8 pct Cu + 0.7 pct Mg. Metallurgical evaluation included thermodynamic calculations of the solidification process using the FactSage™ 6.2 software package, as well as experimental thermal analysis, and in situ neutron diffraction. The study revealed kinetics of solid α-Al, solid Si, Al2Cu, and Mg2Si evolution, as well as the individual effects of Cu and Mg alloying additions on the solidification path of the Al-Si system. Various techniques applied in this study resulted in some discrepancies in the results. For example, the FactSage computations, in general, resulted in 281 K to 286 K (8 °C to 13 °C) higher Al-Si eutectic temperatures than the ones recorded in the thermal analysis, which are also ~278 K (~5 °C) higher than those observed in the in situ neutron diffraction. None of the techniques can provide a definite value for the solidus temperature, as this is affected by the chosen calculation path [283 K to 303 K (10 °C to 30 °C) higher for equilibrium solidification vs non-equilibrium] for the FactSage analysis; and further complicated by evolution of secondary Al-Cu and Mg-Si phases that commenced at the end of solidification. An explanation of the discrepancies observed and complications associated with every technique applied is offered in the paper.

Revealing heterogeneous nucleation of primary Si and eutectic Si by AlP in hypereutectic Al-Si alloys.

PubMed

Li, Jiehua; Hage, Fredrik S; Liu, Xiangfa; Ramasse, Quentin; Schumacher, Peter

2016-04-28

The heterogeneous nucleation of primary Si and eutectic Si can be attributed to the presence of AlP. Although P, in the form of AlP particles, is usually observed in the centre of primary Si, there is still a lack of detailed investigations on the distribution of P within primary Si and eutectic Si in hypereutectic Al-Si alloys at the atomic scale. Here, we report an atomic-scale experimental investigation on the distribution of P in hypereutectic Al-Si alloys. P, in the form of AlP particles, was observed in the centre of primary Si. However, no significant amount of P was detected within primary Si, eutectic Si and the Al matrix. Instead, P was observed at the interface between the Al matrix and eutectic Si, strongly indicating that P, in the form of AlP particles (or AlP 'patch' dependent on the P concentration), may have nucleated on the surface of the Al matrix and thereby enhanced the heterogeneous nucleation of eutectic Si. The present investigation reveals some novel insights into heterogeneous nucleation of primary Si and eutectic Si by AlP in hypereutectic Al-Si alloys and can be used to further develop heterogeneous nucleation mechanisms based on adsorption.

Fabrication of silicon nanowires based on-chip micro-supercapacitor

NASA Astrophysics Data System (ADS)

Soam, Ankur; Arya, Nitin; Singh, Aniruddh; Dusane, Rajiv

2017-06-01

An on-chip micro-supercapacitor (μ-SC) based on Silicon nanowires (SiNWs) has been developed by Hot-wire chemical vapor process. First, finger patterned electrodes of Al were made on a silicon nitride coated Si wafer and SiNWs were then grown selectively on the Al electrodes. μ-SC performance has been tested in an ionic electrolyte and a capacitance of 13 μF/cm2 has been obtained by the μ-SC. The resulted μ-SC can be exploited to store the harvesting energy in micro-electro-mechanical-systems and coupled with battery for peak power leveling. Low temperature growth of SiNWs at 350 °C makes it suitable for prospective flexible electronics applications.

New insights on pressure, temperature, and chemical stability of CsAlSi5O12, a potential host for nuclear waste

NASA Astrophysics Data System (ADS)

Gatta, G. D.; Brundu, A.; Cappelletti, P.; Cerri, G.; de'Gennaro, B.; Farina, M.; Fumagalli, P.; Guaschino, L.; Lotti, P.; Mercurio, M.

2016-10-01

A Cs-bearing polyphase aggregate with composition (in wt%): 76(1)CsAlSi5O12 + 7(1)CsAlSi2O6 + 17(1)amorphous, was obtained from a clinoptilolite-rich epiclastic rock after a beneficiation process of the starting material (aimed to increase the fraction of zeolite to 90 wt%), cation exchange and then thermal treatment. CsAlSi5O12 is an open-framework compound with CAS topology; CsAlSi2O6 is a pollucite-like material with ANA topology. The thermal stability of this polyphase material was investigated by in situ high- T X-ray powder diffraction, the combined P- T effects by a series of runs with a single-stage piston cylinder apparatus, and its chemical stability following the "availability test" ("AVA test") protocol. A series of additional investigations were performed by WDS-electron microprobe analysis in order to describe the P- T-induced modification of the material texture, and to chemically characterize the starting material and the run products. The "AVA tests" of the polyphase aggregate show an extremely modest release of Cs+: 0.05 mg/g. In response to applied temperature and at room P, CsAlSi5O12 experiences an unquenchable and displacive Ama2-to- Amam phase transition at about 770 K, and the Amam polymorph is stable in its crystalline form up to 1600 K; a crystalline-to-amorphous phase transition occurs between 1600 and 1650 K. In response to the applied P = 0.5 GPa, the crystalline-to-amorphous transition of CsAlSi5O12 occurs between 1670 and 1770 K. This leads to a positive Clapeyron slope (i.e., d P/d T > 0) of the crystalline-to-amorphous transition. When the polyphase aggregate is subjected at P = 0.5 GPa and T > 1770 K, CsAlSi5O12 melts and only CsAlSi2O6 (pollucite-like; dominant) and Cs-rich glass (subordinate) are observed in the quenched sample. Based on its thermo-elastic behavior, P- T phase stability fields, and Cs+ retention capacity, CsAlSi5O12 is a possible candidate for use in the immobilization of radioactive isotopes of Cs, or as potential solid hosts for 137Cs γ-radiation source in sterilization applications. More in general, even the CsAlSi5O12-rich aggregate obtained by a clinoptilolite-rich epiclastic rock appears to be suitable for this type of utilizations.

Intersubband absorption in Si(1-x)Ge(x/Si superlattices for long wavelength infrared detectors

NASA Technical Reports Server (NTRS)

Rajakarunanayake, Yasantha; Mcgill, Tom C.

1990-01-01

Researchers calculated the absorption strengths for intersubband transitions in n-type Si(1-x)Ge(x)/Si superlattices. These transitions can be used for the detection of long-wavelength infrared radiation. A significant advantage in Si(1-x)Ge(x)/Si supperlattice detectors is the ability to detect normally incident light; in Ga(1-x)Al(x)As/GaAs superlattices, intersubband absorption is possible only if the incident light contains a polarization component in the growth direction of the superlattice. Researchers present detailed calculation of absorption coefficients, and peak absorption wavelengths for (100), (111) and (110) Si(1-x)Ge(x)/Si superlattices. Peak absorption strengths of about 2000 to 6000 cm(exp -1) were obtained for typical sheet doping concentrations (approx. equals 10(exp 12)cm(exp -2)). Absorption comparable to that in Ga(1-x)Al(x)As/GaAs superlattice detectors, compatibility with existing Si technology, and the ability to detect normally incident light make these devices promising for future applications.

Magnetic, structural and magnetocaloric properties of Ni-Si and Ni-Al thermoseeds for self-controlled hyperthermia.

PubMed

Pandey, Sudip; Quetz, Abdiel; Aryal, Anil; Dubenko, Igor; Mazumdar, Dipanjan; Stadler, Shane; Ali, Naushad

2017-11-01

Self-controlled hyperthermia is a non-invasive technique used to kill or destroy cancer cells while preserving normal surrounding tissues. We have explored bulk magnetic Ni-Si and Ni-Al alloys as a potential thermoseeds. The structural, magnetic and magnetocaloric properties of the samples were investigated, including saturation magnetisation, Curie temperature (T C ), and magnetic and thermal hysteresis, using room temperature X-ray diffraction and magnetometry. The annealing time, temperature and the effects of homogenising the thermoseeds were studied to determine the functional hyperthermia applications. The bulk Ni-Si and Ni-Al binary alloys have Curie temperatures in the desired range, 316 K-319 K (43 °C-46 °C), which is suitable for magnetic hyperthermia applications. We have found that T C strictly follows a linear trend with doping concentration over a wide range of temperature. The magnetic ordering temperature and the magnetic properties can be controlled through substitution in these binary alloys.

Framework Stabilization of Si-Rich LTA Zeolite Prepared in Organic-Free Media

DOE Office of Scientific and Technical Information (OSTI.GOV)

Conato, Marlon T.; Oleksiak, Matthew D.; McGrail, B. Peter

2014-10-16

Zeolite HOU-2 (LTA type) is prepared with the highest silica content (Si/Al = 2.1) reported for Na-LTA zeolites without the use of an organic structure-directing agent. The rational design of Si-rich zeolites has the potential to improve their thermal stability for applications in catalysis, gas storage, and selective separations.

Evaluation of low-cost aluminum composites for aircraft engine structural applications

NASA Technical Reports Server (NTRS)

Mcdanels, D. L.; Signorelli, R. A.

1983-01-01

Panels of discontinuous SiC composites, with several aluminum matrices, were fabricated and evaluated. Modulus, yield strength and tensile strength results indicated that the properties of composites containing SiC whisker, nodule or particulate reinforcements were similar. The modulus of the composites was controlled by the volume percentage of the SiC reinforcement content, while the strength and ductility were controlled by both the reinforcement content and the matrix alloy. The feasibility of fabricating structural shapes by both wire performs and direct casting was demonstrated for Al2O3/Al composites. The feasibility of fabricating high performance composites into structural shapes by low pressure hot molding was demonstrated for B4C-coated B/Al composites.

Nanoscale assembly of silicon-like [Al(As1-xNx)]ySi5-2y alloys: Fundamental theoretical and experimental studies of structural and optical properties

NASA Astrophysics Data System (ADS)

Jiang, L.; Sims, P. E.; Grzybowski, G.; Beeler, R. T.; Chizmeshya, A. V. G.; Smith, D. J.; Kouvetakis, J.; Menéndez, J.

2013-07-01

Ab initio theoretical simulations of Al(As1-xNx)Si3 alloys, a new class of optoelectronic materials, confirm that these compounds are likely to be disordered via a mechanism that preserves the integrity of the constituent III-V-Si3 tetrahedra but randomizes their orientation in the average diamond lattice of the compound. This type of disorder is consistent with experimental structural data and with the proposed growth mechanism for such alloys, according to which “III:V(SiH3)3” intermediate complexes are formed in the gas phase from reactions between group-III atomic beams and V(SiH3)3 molecules, delivering the entire III-V-Si3 tetrahedra to the growing film. Experimental optical studies of these Al(As1-xNx)Si3 alloys as well as more general [Al(As1-xNx)]ySi5-2y compounds grown on Si substrates were carried out using spectroscopic ellipsometry. The resulting dielectric functions are found to be similar to broadened versions of their counterparts in pure Si. This broadening may have important practical applications, particularly in photovoltaics, because it dramatically enhances the optical absorption of Si in the visible range of the electromagnetic spectrum. A critical point analysis reveals the existence of direct optical transitions at energies as low as 2.5 eV, well below the lowest direct absorption edge of Si at 3.3 eV. Such transitions are predicted theoretically for perfectly ordered III-V-Si3 compounds, and the experimental results suggest that they are robust against tetrahedra orientational disorder.

Active metal brazing of Al2O3 to Kovar® (Fe-29Ni-17Co wt.%) using Copper ABA® (Cu-3.0Si-2.3Ti-2.0Al wt.%)

NASA Astrophysics Data System (ADS)

Ali, Majed; Knowles, Kevin M.; Mallinson, Phillip M.; Fernie, John A.

2018-01-01

The application of an active braze alloy (ABA) known as Copper ABA® (Cu-3.0Si-2.3Ti-2.0Al wt.%) to join Al2O3 to Kovar® (Fe-29Ni-17Co wt.%) has been investigated. This ABA was selected to increase the operating temperature of the joint beyond the capabilities of typically used ABAs such as Ag-Cu-Ti-based alloys. Silica present as a secondary phase in the Al2O3 at a level of 5 wt.% enabled the ceramic component to bond to the ABA chemically by forming a layer of Si3Ti5 at the ABA/Al2O3 interface. Appropriate brazing conditions to preserve a near-continuous Si3Ti5 layer on the Al2O3 and a continuous Fe3Si layer on the Kovar® were found to be a brazing time of ≤15 min at 1025 °C or ≤2 min at 1050 °C. These conditions produced joints that did not break on handling and could be prepared easily for microscopy. Brazing for longer periods of time, up to 45 min, at these temperatures broke down the Si3Ti5 layer on the Al2O3, while brazing at ≥1075 °C for 2-45 min broke down the Fe3Si layer on the Kovar® significantly. Further complications of brazing at ≥1075 °C included leakage of the ABA out of the joint and the formation of a new brittle silicide, Ni16Si7Ti6, at the ABA/Al2O3 interface. This investigation demonstrates that it is not straightforward to join Al2O3 to Kovar® using Copper ABA®, partly because the ranges of suitable values for the brazing temperature and time are quite limited. Other approaches to increase the operating temperature of the joint are discussed.

Measurement of key resonances for the Al 24 ( p , γ ) Si 25 reaction rate using in-beam γ -ray spectroscopy

DOE Office of Scientific and Technical Information (OSTI.GOV)

Longfellow, B.; Gade, A.; Brown, B. A.

Energy levels and branching ratios for the rp-process nucleus 25Si were determined from the reactions 9Be ( 26Si, 25Si) X and 9Be ( 25Al, 25Si) X using in-beam γ-ray spectroscopy with both high-efficiency and high-resolution detector arrays. Proton-unbound states at 3695(14) and 3802(11) keV were identified and assigned tentative spins and parities based on comparison to theory and the mirror nucleus. The 24Al (p, γ) 25Si reaction rate was calculated using the experimental states and states from charge-dependent USDA and USDB shell-model calculations with downward shifts of the 1s 1/2 proton orbital to account for the observed Thomas-Ehrman shift, leadingmore » to a factor of 10–100 increase in rate for the temperature region of 0.22 GK as compared to a previous calculation. These shifts may be applicable to neighboring nuclei, impacting the proton capture rates in this region of the chart.« less

Measurement of key resonances for the Al 24 ( p , γ ) Si 25 reaction rate using in-beam γ -ray spectroscopy

DOE PAGES

Longfellow, B.; Gade, A.; Brown, B. A.; ...

2018-05-04

Energy levels and branching ratios for the rp-process nucleus 25Si were determined from the reactions 9Be ( 26Si, 25Si) X and 9Be ( 25Al, 25Si) X using in-beam γ-ray spectroscopy with both high-efficiency and high-resolution detector arrays. Proton-unbound states at 3695(14) and 3802(11) keV were identified and assigned tentative spins and parities based on comparison to theory and the mirror nucleus. The 24Al (p, γ) 25Si reaction rate was calculated using the experimental states and states from charge-dependent USDA and USDB shell-model calculations with downward shifts of the 1s 1/2 proton orbital to account for the observed Thomas-Ehrman shift, leadingmore » to a factor of 10–100 increase in rate for the temperature region of 0.22 GK as compared to a previous calculation. These shifts may be applicable to neighboring nuclei, impacting the proton capture rates in this region of the chart.« less

Synthesis of crystalline and amorphous, particle-agglomerated 3-D nanostructures of Al and Si oxides by femtosecond laser and the prediction of these particle sizes

NASA Astrophysics Data System (ADS)

Sivayoganathan, Mugunthan; Tan, Bo; Venkatakrishnan, Krishnan

2012-11-01

We report a single step technique of synthesizing particle-agglomerated, amorphous 3-D nanostructures of Al and Si oxides on powder-fused aluminosilicate ceramic plates and a simple novel method of wafer-foil ablation to fabricate crystalline nanostructures of Al and Si oxides at ambient conditions. We also propose a particle size prediction mechanism to regulate the size of vapor-condensed agglomerated nanoparticles in these structures. Size characterization studies performed on the agglomerated nanoparticles of fabricated 3-D structures showed that the size distributions vary with the fluence-to-threshold ratio. The variation in laser parameters leads to varying plume temperature, pressure, amount of supersaturation, nucleation rate, and the growth rate of particles in the plume. The novel wafer-foil ablation technique could promote the possibilities of fabricating oxide nanostructures with varying Al/Si ratio, and the crystallinity of these structures enhances possible applications. The fabricated nanostructures of Al and Si oxides could have great potentials to be used in the fabrication of low power-consuming complementary metal-oxide-semiconductor circuits and in Mn catalysts to enhance the efficiency of oxidation on ethylbenzene to acetophenone in the super-critical carbon dioxide.

Synthesis of crystalline and amorphous, particle-agglomerated 3-D nanostructures of Al and Si oxides by femtosecond laser and the prediction of these particle sizes.

PubMed

Sivayoganathan, Mugunthan; Tan, Bo; Venkatakrishnan, Krishnan

2012-11-09

We report a single step technique of synthesizing particle-agglomerated, amorphous 3-D nanostructures of Al and Si oxides on powder-fused aluminosilicate ceramic plates and a simple novel method of wafer-foil ablation to fabricate crystalline nanostructures of Al and Si oxides at ambient conditions. We also propose a particle size prediction mechanism to regulate the size of vapor-condensed agglomerated nanoparticles in these structures. Size characterization studies performed on the agglomerated nanoparticles of fabricated 3-D structures showed that the size distributions vary with the fluence-to-threshold ratio. The variation in laser parameters leads to varying plume temperature, pressure, amount of supersaturation, nucleation rate, and the growth rate of particles in the plume. The novel wafer-foil ablation technique could promote the possibilities of fabricating oxide nanostructures with varying Al/Si ratio, and the crystallinity of these structures enhances possible applications. The fabricated nanostructures of Al and Si oxides could have great potentials to be used in the fabrication of low power-consuming complementary metal-oxide-semiconductor circuits and in Mn catalysts to enhance the efficiency of oxidation on ethylbenzene to acetophenone in the super-critical carbon dioxide.

Synthesis of crystalline and amorphous, particle-agglomerated 3-D nanostructures of Al and Si oxides by femtosecond laser and the prediction of these particle sizes

PubMed Central

2012-01-01

We report a single step technique of synthesizing particle-agglomerated, amorphous 3-D nanostructures of Al and Si oxides on powder-fused aluminosilicate ceramic plates and a simple novel method of wafer-foil ablation to fabricate crystalline nanostructures of Al and Si oxides at ambient conditions. We also propose a particle size prediction mechanism to regulate the size of vapor-condensed agglomerated nanoparticles in these structures. Size characterization studies performed on the agglomerated nanoparticles of fabricated 3-D structures showed that the size distributions vary with the fluence-to-threshold ratio. The variation in laser parameters leads to varying plume temperature, pressure, amount of supersaturation, nucleation rate, and the growth rate of particles in the plume. The novel wafer-foil ablation technique could promote the possibilities of fabricating oxide nanostructures with varying Al/Si ratio, and the crystallinity of these structures enhances possible applications. The fabricated nanostructures of Al and Si oxides could have great potentials to be used in the fabrication of low power-consuming complementary metal-oxide-semiconductor circuits and in Mn catalysts to enhance the efficiency of oxidation on ethylbenzene to acetophenone in the super-critical carbon dioxide. PMID:23140103

Effect of contact angle, zeta potential and particles size on the in vitro studies of Al2O3 and SiO2 nanoparticles.

PubMed

Karunakaran, Gopalu; Suriyaprabha, Rangaraj; Rajendran, Venkatachalam; Kannan, Narayanasamy

2015-02-01

Currently, nanometal oxides find their role in different biological applications such as tissue engineering, implant and bone replacement materials. Owing to the increased use of nanoparticles, it is necessary to understand their release and toxicity in the biological system. In this regard, three independent studies such as in vitro cytotoxicity, antioxidant activity and biocompatibility of nano- and micrometal oxide particles such as alumina (Al2O3) and silica (SiO2) are evaluated. It is evident from cell viability study that nanoAl2O3 and SiO2 particles are less toxic when compared with microAl2O3 and SiO2 to NIH 3T3 cell lines up to 200 µg/ml. Antioxidant properties of micro- and nanoAl2O3 in terms of radical scavenging percentage for micro- and nanoAl2O3 are 59.1% and 72.1%, respectively, at 100 mg. Similarly, the radical scavenging percentage of nano- and bulk SiO2 are 81.0% and 67.2%, respectively. The present study reveals that the cellular behaviour, interaction and biocompatibility of metal oxides differ with dose, particle size, contact angle and zeta potential. The present study opens up a new strategy to analyse in vitro nanotoxicity.

Low temperature synthesis of highly oriented p-type Si1-xGex (x: 0-1) on an insulator by Al-induced layer exchange

NASA Astrophysics Data System (ADS)

Toko, K.; Kusano, K.; Nakata, M.; Suemasu, T.

2017-10-01

A composition tunable Si1-xGex alloy has a wide range of applications, including in electronic and photonic devices. We investigate the Al-induced layer exchange (ALILE) growth of amorphous Si1-xGex on an insulator. The ALILE allowed Si1-xGex to be large grained (> 50 μm) and highly (111)-oriented (> 95%) over the whole composition range by controlling the growth temperature (≤ 400 °C). From a comparison with conventional solid-phase crystallization, we determined that such characteristics of the ALILE arose from the low activation energy of nucleation and the high frequency factor of lateral growth. The Si1-xGex layers were highly p-type doped, whereas the process temperatures were low, thanks to the electrically activated Al atoms with the amount of solid solubility limit. The electrical conductivities approached those of bulk single crystals within one order of magnitude. The resulting Si1-xGex layer on an insulator is useful not only for advanced SiGe-based devices but also for virtual substrates, allowing other materials to be integrated on three-dimensional integrated circuits, glass, and even a plastic substrate.

Mechanical and physical properties of calcium silicate/alumina composite for biomedical engineering applications.

PubMed

Shirazi, F S; Mehrali, M; Oshkour, A A; Metselaar, H S C; Kadri, N A; Abu Osman, N A

2014-02-01

The focus of this study is to investigate the effect of Al2O3 on α-calcium silicate (α-CaSiO3) ceramic. α-CaSiO3 was synthesized from CaO and SiO2 using mechanochemical method followed by calcinations at 1000°C. α-CaSiO3 and alumina were grinded using ball mill to create mixtures, containing 0-50w% of Al2O3 loadings. The powders were uniaxially pressed and followed by cold isostatic pressing (CIP) in order to achieve greater uniformity of compaction and to increase the shape capability. Afterward, the compaction was sintered in a resistive element furnace at both 1150°C and 1250°C with a 5h holding time. It was found that alumina reacted with α-CaSiO3 and formed alumina-rich calcium aluminates after sintering. An addition of 15wt% of Al2O3 powder at 1250°C were found to improve the hardness and fracture toughness of the calcium silicate. It was also observed that the average grain sizes of α-CaSiO3 /Al2O3 composite were maintained 500-700nm after sintering process. © 2013 Published by Elsevier Ltd.

Investigation on the solidification course of Al-Si alloys by using a numerical Newtonian thermal analysis method

NASA Astrophysics Data System (ADS)

Tang, Peng; Hu, Zhiliu; Zhao, Yanjun; Huang, Qingbao

2017-12-01

A numerical Newtonian thermal analysis (NTA) method was carried out for online monitoring the solidification course of commercial Al-Si alloys. The solidification paths of different molten Al-Si alloys were characterized by the fraction solid curves. The variation of heat capacity of Al and Si were concerned in the determination of baseline evaluation of latent heat. In this experiment, the pure Al, Al-1Si, Al-5Si, Al-9Si, Al-13Si and Al-18Si alloys were molten at 800 °C and cooled at room temperature, respectively. The cooling curves of these alloys were measured by using K-type thermocouples. The liquidus temperatures of these alloys decreased with the increase of Si %. An obvious stage occurred at about 580 °C, which was closely related to Al-Si eutectic reaction. Different phase fractions of these alloys were supported by the microstructure observation.

Molecular Structures of Al/Si and Fe/Si Coprecipitates and the Implication for Selenite Removal

PubMed Central

Chan, Ya-Ting; Kuan, Wen-Hui; Tzou, Yu-Min; Chen, Tsan-Yao; Liu, Yu-Ting; Wang, Ming-Kuang; Teah, Heng-Yi

2016-01-01

Aluminum and iron oxides have been often used in the coagulation processes during water purification due to their unique surface properties toward anions. In the presence of silica, the coprecipitation of Al/Si or Fe/Si might decrease the efficiency of wastewater purification and reuse. In this study, surface properties and molecular structures of Al/Si and Fe/Si coprecipitates were characterized using spectroscopic techniques. Also, the selenite removal efficiency of Al/Si and Fe/Si coprecipitates in relation to their surface and structural properties was investigated. While dissolved silicate increased with increasing pH from Fe/Si coprecipitates, less than 7% of silicate was discernible from Al/Si samples over the range from acidic to alkaline conditions. Our spectroscopic results showed that the associations between Al and Si were relatively stronger than that between Fe and Si in coprecipitates. In Al/Si coprecipitates, core-shell structures were developed with AlO6/AlO4 domains as the shells and Si frameworks polymerized from the SiO2 as the cores. However, Si framework remained relatively unchanged upon coprecipitation with Fe hydroxides in Fe/Si samples. The Si core with Al shell structure of Al/Si coprecipitates shielded the negative charges from SiO2 and thereby resulted in a higher adsorption capacity of selenite than Fe/Si coprecipitates. PMID:27095071

Effect of AlB2 on the P-threshold in Al-Si alloy

NASA Astrophysics Data System (ADS)

Wu, Yuying; Liu, Xiangfa

2018-06-01

The nucleation of primary Si in Al-Si alloys has been investigated in this work. It was found that there was a threshold concentration of P, below which AlP can not heterogeneous nucleate primary Si in Al-12 wt%Si alloy. AlB2 can not nucleate primary Si directly, but the presence of AlB2 may assist the nucleation of AlP leading to the nucleation of primary Si particles. In addition, with addition of AlB2, the nucleation efficiency of AlP can be improved in Al-18 wt%Si alloy. The orientation relationship between AlB2 and AlP has been calculated, and the adsorption model for AlB2 and AlP was proposed in this work.

Long-duration orbital effects on optical coating materials

NASA Technical Reports Server (NTRS)

Herzig, Howard; Toft, Albert R.; Fleetwood, Charles M., Jr.

1993-01-01

We flew specimens of eight different optical coating materials in low earth orbit as part of the Long Duration Exposure Facility manifest to determine their ability to withstand exposure to the residual atomic 0 and other environmental effects at those altitudes. We included samples of Al, Au, Ir, Os, Pt, Al + MgF2, Al + SiO(x), and chemical-vapor-deposited SiC, representing reflective optical applications from the vacuum ultraviolet through the visible portions of the spectrum. We found that the majority of the materials suffered sufficient reflectance degradation to warrant careful consideration in the design of future space-flight instrumentation.

Effect of Ga Addition on Morphology and Recovery of Primary Si During Al-Si Alloy Solidification Refining

NASA Astrophysics Data System (ADS)

Li, Jingwei; Bai, Xiaolong; Li, Yanlei; Ban, Boyuan; Chen, Jian

2015-12-01

The effect of Ga addition on alloy macrostructure, morphology and recovery rate of primary Si during the Al-Si-Ga alloy solvent refining process of silicon was studied in this work. The addition of Ga to Al-Si alloy could change the morphology of the primary Si. The average plate thickness of the primary Si increases with increase of Ga content. With the increase of Ga content, the average plate length of the primary Si crystals becomes larger when the Ga content is less than 5% in the Al-30%Si-xGa alloy, but becomes smaller when the Ga content exceeds 5%. Al-Si-Ga alloys consist of three types, primary Si, GaxAl1-x, (α-Al+Si+β-Ga) eutectic. (111) is the preferred growth surface of the plate-like primary Si. The recovery rate of the primary Si increases with the increase of Ga content. When the Ga content increased to 20% in Al-30%Si-xGa alloy, the relative recovery rate of the primary Si increased to 50.41% than that in Al-30%Si alloy.

XAFS studies on a modified Al-Si hypoeutectic alloy

NASA Astrophysics Data System (ADS)

Srirangam, V. S. Prakash; Chattopadhyay, S.; Shibata, T.; Kaduk, J. A.; Miller, J. T.; Segre, C. U.; Shankar, S.

2009-11-01

To understand the role of Sr in doped aluminium-silicon alloys, we have conducted for the first time, Sr- K edge XAFS measurements on Al-3%Si-0.04%Sr. Aluminium-Silicon alloys are widely used in automobile and aerospace applications. Modification of these alloys with addition of trace levels of Sr (200-400 ppm) results in changing the morphology of Si eutectic from "plate" like structure to "fibrous" structure. Several theories have been proposed to understand the mechanism of modification of eutectic phases with Sr addition in these alloys, but there is no conclusive evidence in support of these theories. From our XAFS analysis, we suggest Sr-Si bonds and Sr-Sr correlations may be responsible for the morphological transformation observed in the alloy.

Equiaxed and columnar dendrite growth simulation in Al-7Si- Mg ternary alloys using cellular automaton method

NASA Astrophysics Data System (ADS)

Chen, Rui; Xu, Qingyan; Liu, Baicheng

2015-06-01

In this paper, a modified cellular automaton (MCA) model allowing for the prediction of dendrite growth of Al-Si-Mg ternary alloys in two and three dimensions is presented. The growth kinetic of S/L interface is calculated based on the solute equilibrium approach. In order to describe the dendrite growth with arbitrarily crystallographic orientations, this model introduces a modified decentered octahedron algorithm for neighborhood tracking to eliminate the effect of mesh dependency on dendrite growth. The thermody namic and kinetic data needed for dendrite growth is obtained through coupling with Pandat software package in combination with thermodynamic/kinetic/equilibrium phase diagram calculation databases. The effect of interactions between various alloying elements on solute diffusion coefficient is considered in the model. This model has first been used to simulate Al-7Si (weight percent) binary dendrite growth followed by a validation using theoretical predictions. For ternary alloy, Al-7Si-0.5Mg dendrite simulation has been carried out and the effects of solute interactions on diffusion matrix as well as the differences of Si and Mg in solute distribution have been analyzed. For actual application, this model has been applied to simulate the equiaxed dendrite growth with various crystallographic orientations of Al-7Si-0.36Mg ternary alloy, and the predicted secondary dendrite arm spacing (SDAS) shows a reasonable agreement with the experimental ones. Furthermore, the columnar dendrite growth in directional solidification has also been simulated and the predicted primary dendrite arm spacing (PDAS) is in good agreement with experiments. The simulated results effectively demonstrate the abilities of the model in prediction of dendritic microstructure of Al-Si-Mg ternary alloy.

Plasma-sprayed CaTiSiO5 ceramic coating on Ti-6Al-4V with excellent bonding strength, stability and cellular bioactivity.

PubMed

Wu, Chengtie; Ramaswamy, Yogambha; Liu, Xuanyong; Wang, Guocheng; Zreiqat, Hala

2009-02-06

Novel Ca-Si-Ti-based sphene (CaTiSiO5) ceramics possess excellent chemical stability and cytocompatibility. The aim of this study was to prepare sphene coating on titanium alloy (Ti-6Al-4V) for orthopaedic applications using the plasma spray method. The phase composition, surface and interface microstructure, coating thickness, surface roughness and bonding strength of the plasma-sprayed sphene coating were analysed using X-ray diffraction, scanning electron microscopy, atomic force microscopy and the standard mechanical testing of the American Society for Testing and Materials, respectively. The results indicated that sphene coating was obtained with a uniform and dense microstructure at the interface of the Ti-6Al-4V surface and the thickness and surface roughness of the coating were approximately 150 and 10 microm, respectively. Plasma-sprayed sphene coating on Ti-6Al-4V possessed a significantly improved bonding strength and chemical stability compared with plasma-sprayed hydroxyapatite (HAp) coating. Plasma-sprayed sphene coating supported human osteoblast-like cell (HOB) attachment and significantly enhanced HOB proliferation and differentiation compared with plasma-sprayed HAp coating and uncoated Ti-6Al-4V. Taken together, plasma-sprayed sphene coating on Ti-6Al-4V possessed excellent bonding strength, chemical stability and cellular bioactivity, indicating its potential application for orthopaedic implants.

Plasma-sprayed CaTiSiO5 ceramic coating on Ti-6Al-4V with excellent bonding strength, stability and cellular bioactivity

PubMed Central

Wu, Chengtie; Ramaswamy, Yogambha; Liu, Xuanyong; Wang, Guocheng; Zreiqat, Hala

2008-01-01

Novel Ca-Si-Ti-based sphene (CaTiSiO5) ceramics possess excellent chemical stability and cytocompatibility. The aim of this study was to prepare sphene coating on titanium alloy (Ti-6Al-4V) for orthopaedic applications using the plasma spray method. The phase composition, surface and interface microstructure, coating thickness, surface roughness and bonding strength of the plasma-sprayed sphene coating were analysed using X-ray diffraction, scanning electron microscopy, atomic force microscopy and the standard mechanical testing of the American Society for Testing and Materials, respectively. The results indicated that sphene coating was obtained with a uniform and dense microstructure at the interface of the Ti-6Al-4V surface and the thickness and surface roughness of the coating were approximately 150 and 10 μm, respectively. Plasma-sprayed sphene coating on Ti-6Al-4V possessed a significantly improved bonding strength and chemical stability compared with plasma-sprayed hydroxyapatite (HAp) coating. Plasma-sprayed sphene coating supported human osteoblast-like cell (HOB) attachment and significantly enhanced HOB proliferation and differentiation compared with plasma-sprayed HAp coating and uncoated Ti-6Al-4V. Taken together, plasma-sprayed sphene coating on Ti-6Al-4V possessed excellent bonding strength, chemical stability and cellular bioactivity, indicating its potential application for orthopaedic implants. PMID:18664431

SiNOI and AlGaAs-on-SOI nonlinear circuits for continuum generation in Si photonics

NASA Astrophysics Data System (ADS)

El Dirani, Houssein; Monat, Christelle; Brision, Stéphane; Olivier, Nicolas; Jany, Christophe; Letartre, Xavier; Pu, Minhao; Girouard, Peter D.; Hagedorn Frandsen, Lars; Semenova, Elizaveta; Katsuo Oxenløwe, Leif; Yvind, Kresten; Sciancalepore, Corrado

2018-02-01

In this communication, we report on the design, fabrication, and testing of Silicon Nitride on Insulator (SiNOI) and Aluminum-Gallium-Arsenide (AlGaAs) on silicon-on-insulator (SOI) nonlinear photonic circuits for continuum generation in Silicon (Si) photonics. As recently demonstrated, the generation of frequency continua and supercontinua can be used to overcome the intrinsic limitations of nowadays silicon photonics notably concerning the heterogeneous integration of III-V on SOI lasers for datacom and telecom applications. By using the Kerr nonlinearity of monolithic silicon nitride and heterointegrated GaAs-based alloys on SOI, the generation of tens or even hundreds of new optical frequencies can be obtained in dispersion tailored waveguides, thus providing an all-optical alternative to the heterointegration of hundreds of standalone III-V on Si lasers. In our work, we present paths to energy-efficient continua generation on silicon photonics circuits. Notably, we demonstrate spectral broadening covering the full C-band via Kerrbased self-phase modulation in SiNOI nanowires featuring full process compatibility with Si photonic devices. Moreover, AlGaAs waveguides are heterointegrated on SOI in order to dramatically reduce (x1/10) thresholds in optical parametric oscillation and in the power required for supercontinuum generation under pulsed pumping. The manufacturing techniques allowing the monolithic co-integration of nonlinear functionalities on existing CMOS-compatible Si photonics for both active and passive components will be shown. Experimental evidence based on self-phase modulation show SiNOI and AlGaAs nanowires capable of generating wide-spanning frequency continua in the C-Band. This will pave the way for low-threshold power-efficient Kerr-based comb- and continuum- sources featuring compatibility with Si photonic integrated circuits (Si-PICs).

Highly Oriented Growth of Catalytically Active Zeolite ZSM-5 Films with a Broad Range of Si/Al Ratios.

PubMed

Fu, Donglong; Schmidt, Joel E; Ristanović, Zoran; Chowdhury, Abhishek Dutta; Meirer, Florian; Weckhuysen, Bert M

2017-09-04

Highly b-oriented zeolite ZSM-5 films are critical for applications in catalysis and separations and may serve as models to study diffusion and catalytic properties in single zeolite channels. However, the introduction of catalytically active Al 3+ usually disrupts the orientation of zeolite films. Herein, using structure-directing agents with hydroxy groups, we demonstrate a new method to prepare highly b-oriented zeolite ZSM-5 films with a broad range of Si/Al ratios (Si/Al=45 to ∞). Fluorescence micro-(spectro)scopy was used to monitor misoriented microstructures, which are invisible to X-ray diffraction, and show Al 3+ framework incorporation and illustrate the differences between misoriented and b-oriented films. The methanol-to-hydrocarbons process was studied by operando UV/Vis diffuse reflectance micro-spectroscopy with on-line mass spectrometry, showing that the b-oriented zeolite ZSM-5 films are active and stable under realistic process conditions. © 2017 The Authors. Published by Wiley-VCH Verlag GmbH & Co. KGaA.

Highly Oriented Growth of Catalytically Active Zeolite ZSM‐5 Films with a Broad Range of Si/Al Ratios

PubMed Central

Fu, Donglong; Schmidt, Joel E.; Ristanović, Zoran; Chowdhury, Abhishek Dutta; Meirer, Florian

2017-01-01

Abstract Highly b‐oriented zeolite ZSM‐5 films are critical for applications in catalysis and separations and may serve as models to study diffusion and catalytic properties in single zeolite channels. However, the introduction of catalytically active Al3+ usually disrupts the orientation of zeolite films. Herein, using structure‐directing agents with hydroxy groups, we demonstrate a new method to prepare highly b‐oriented zeolite ZSM‐5 films with a broad range of Si/Al ratios (Si/Al=45 to ∞). Fluorescence micro‐(spectro)scopy was used to monitor misoriented microstructures, which are invisible to X‐ray diffraction, and show Al3+ framework incorporation and illustrate the differences between misoriented and b‐oriented films. The methanol‐to‐hydrocarbons process was studied by operando UV/Vis diffuse reflectance micro‐spectroscopy with on‐line mass spectrometry, showing that the b‐oriented zeolite ZSM‐5 films are active and stable under realistic process conditions. PMID:28675590

SiAlON COATINGS OF SILICON NITRIDE AND SILICON CARBIDE

DOE Office of Scientific and Technical Information (OSTI.GOV)

Jan W. Nowok; John P. Hurley; John P. Kay

2000-06-01

The need for new engineering materials in aerospace applications and in stationary power turbine blades for high-efficiency energy-generating equipment has led to a rapid development of ceramic coatings. They can be tailored to have superior physical (high specific strength and stiffness, enhanced high-temperature performance) and chemical (high-temperature corrosion resistance in more aggressive fuel environments) properties than those of monolithic ceramic materials. Among the major chemical properties of SiAlON-Y ceramics are their good corrosion resistance against aggressive media combined with good thermal shock behavior. The good corrosion resistance results from the yttria-alumina-garnet (YAG), Al{sub 5}Y{sub 3}O{sub 12}, formed during the corrosionmore » process of SiAlON-Y ceramics in combustion gases at 1300 C. The interfacial chemical precipitation of the YAG phase is beneficial. This phase may crystallize in cubic and/or tetragonal modifications and if formed in SiAlON-Y ceramic may simultaneously generate residual stress. Also, this phase can contain a large number of point defects, which is a consequence of the large unit cell and complexity of the YAG structure because it has no close-packed oxygen planes. Therefore, the need exists to elucidate the corrosion mechanism of a multilayered barrier with respect to using SiAlON-YAG as a corrosion-protective coating. Stress corrosion cracking in the grain boundary of a silicon nitride (Si{sub 3}N{sub 4}) ceramic enriched in a glassy phase such as SiAlON can significantly affect its mechanical properties. It has been suggested that the increased resistance of the oxynitride glass to stress corrosion is related to the increased surface potential of the fracture surface created in the more durable and highly cross-linked oxynitride glass network structure. We expect that either increased or decreased surface potential of the intergranular glassy phase is brought about by changes in the residual stress of the SiAlON-Y ceramic and/or creation of a space-charge region at the SiAlON-YAG interface. Both features originate from a secondary phase of YAG formed during the SiAlON-Y glass corrosion process. Conventional oxidation-protection coatings for metallic materials in high-temperature corrosive environments are typically formed by applying a slurry mixture to the surface followed by a high-temperature furnace cure. During the cure, the coating reacts with the alloy to form a layer typically 25 to 50 {micro}m{sup 3} thick. Generally, coating thickness is one critical microstructural parameter that influences its performance; therefore, its optimization is an important aspect of coating technology. The aim of the present research program is (1) to produce a thin SiAlON-YAG ceramic coating with a high quality of interface, (2) to understand the major experimental characteristics for creating a good bonding between a substrate and a thin coating, and (3) to explain why the Al{sub 5}Y{sub 3}O{sub 12} phase increases SiAlON-Y ceramic alkali corrosion resistance. To produce the SiAlON-Y coating on silicon nitride ceramic with a YAG layer, a slurry mixture of SiAlON-Y components was designed. The research program was extended to Y{sub 2}SiO{sub 5} coating to get preliminary information on the Si{sub 3}N{sub 4}-Y{sub 2}SiO{sub 5} interface microstructure. It was expected that this phase would have a very low porosity. Generally, coatings that contain ductile phases such as Y{sub 2}SiO{sub 5} can produce low-porosity coatings.« less

Investigation on AlP as the heterogeneous nucleus of Mg2Si in Al-Mg2Si alloys by experimental observation and first-principles calculation

NASA Astrophysics Data System (ADS)

Sun, Jiayue; Li, Chong; Liu, Xiangfa; Yu, Liming; Li, Huijun; Liu, Yongchang

2018-03-01

The microstructural evolution of primary Mg2Si in Al-20%Mg2Si with Al-3%P master alloy was observed by scanning electron microscope. And the interfacial properties of AlP/Mg2Si interface were investigated using first-principles calculations. The calculation results show that AlP(1 0 0)/Mg2Si(2 1 1) and AlP(3 3 1)/Mg2Si(1 1 0) interfaces can form steadily. P-terminated AlP(1 0 0)/Mg2Si(2 1 1) interface with the largest work of adhesion (4.13 J/m2) is theoretically the most stable. The interfacial electronic structure reveals that there are covalent Si-Al, Si-P and Mg-P bonds existing between AlP and Mg2Si slabs. Due to the AlP particles as effective heterogeneous nucleus of Mg2Si, primary Mg2Si particles change from dendrite to octahedron/truncated octahedron, and their sizes decrease to ∼20 μm.

Ab-initio study of electronic structure and magnetic properties of half-metallic Fe{sub 2}Mn{sub 1−x}V{sub x}Si{sub 0.5}Al{sub 0.5} alloys

DOE Office of Scientific and Technical Information (OSTI.GOV)

Go, Anna, E-mail: annago@alpha.uwb.edu.pl

2014-11-15

Ab-initio electronic structure calculations are carried out for quinternary Fe{sub 2}Mn{sub 1−x}V{sub x}Si{sub 0.5}Al{sub 0.5} alloys. When x=0 the alloy is half-metallic ferromagnet, with magnetic moment following the Slater–Pauling rule. Replacement of Mn by V, changes its electronic and magnetic structure. V-doped alloys exhibit half-metallic behavior for x≤0.25. However, even for higher V concentrations, electronic spin polarization is still very high, what makes the alloys interesting for spintronic applications. - Graphical abstract: Densities of states of Fe{sub 2}MnSi{sub 0.5}Al{sub 0.5} and magnetic moments of Fe{sub 2}Mn{sub 1−x}V{sub x}Si{sub 0.5}Al{sub 0.5}. - Highlights: • Fe{sub 2}MnSi{sub 0.5}Al{sub 0.5} is a half-metallicmore » ferromagnet with a minority band gap of 0.49 eV. • Half-metallic band gap is very stable against the change of the lattice parameter. • Half-metallic band gap is obtained for Fe{sub 2}Mn{sub 1−x}V{sub x}Si{sub 0.5}Al{sub 0.5} for x≤0.25. • Electronic spin polarization is very high and equal to at least 95% for x≤0.625. • The main carrier of magnetism of the compound is manganese.« less

Effect of Cu content on the microstructure evolution and fracture behavior of Al-Mg-Si-xCu (x  =  0, 1, 2 and 4 wt.%) alloys

NASA Astrophysics Data System (ADS)

Rahman, Tanzilur; Sakib Rahman, Saadman; Zurais Ibne Ashraf, Md; Ibn Muneer, Khalid; Rashed, H. M. Mamun Al

2017-10-01

Lightweighting automobiles can dramatically reduce their consumption of fossil fuels and the atmospheric CO2 concentration. Heat-treatable Al-Mg-Si has attracted a great deal of research interest due to their high strength-to-weight ratio, good formability, and resistance to corrosion. In the past, it has been reported that the mechanical properties of Al-Mg-Si can be ameliorated by the addition of Cu. However, determining the right amount of Cu content still remains a challenge. To address this the microstructure evolution, phase transformation, mechanical properties, and fracture behavior of Al-Mg-Si-xCu (x  =  0, 1, 2 and 4 wt.%) alloys were studied through optical and field emission scanning electron microscopy, energy-dispersive x-ray spectroscopy, differential scanning calorimetry, hardness measurements, and tensile tests. The obtained results indicate that the addition of Cu of up to 4 wt.% improved the hardness (17.5% increase) of the alloy, but reduced its ductility. Moreover, an alloy with 4 wt.% Cu fractured in a brittle manner while Al-Mg-Si showed ductile fracture mechanism. In addition, differential scanning calorimetry analysis revealed five exothermic peaks in all Cu containing alloys. Our results also showed that θʹ and Qʹ-type intermetallic phases formed owing to the addition of Cu, which affected the strength and ductility. Thus, Al-Mg-Si-xCu alloy with the right amount of Cu content serves as an excellent candidate for replacing more costly alloys for cost-effective lightweighting and other applications.

Effect of SiC particle size on the microstructure and properties of cold-sprayed Al/SiCp composite coating

NASA Astrophysics Data System (ADS)

Yu, Min; Hua, Junwei

2017-07-01

The Al5056/SiC composite coatings were prepared by cold spraying. Experimental results show that the SiC content in the composite coating deposited with the SiC powder having an average size of 67 μm (Al5056/SiC-67) is similar to that deposited with the SiC powder having an average size of 27 μm (Al5056/SiC-27). The microhardness and cohesion strength of Al5056/SiC-67 coating are higher than those of the Al5056/SiC-27 coating. In addition, the Al5056/SiC-67 coating having a superior wear resistance because of the coarse SiC powder with a superior kinetic energy contributes to the deformation resistance of the matrix Al5056 particles.

Synthesis, microstructure and magnetic properties of Fe{sub 3}Si{sub 0.7}Al{sub 0.3}@SiO{sub 2} core–shell particles and Fe{sub 3}Si/Al{sub 2}O{sub 3} soft magnetic composite core

DOE Office of Scientific and Technical Information (OSTI.GOV)

Wang, Jian, E-mail: snove418562@163.com; Key Laboratory for Ferrous Metallurgy and Resources Utilization of Ministry of Education, Wuhan University of Science and Technology, Wuhan, Hubei 430081; Fan, Xi’an, E-mail: groupfxa@163.com

2015-11-15

Fe{sub 3}Si{sub 0.7}Al{sub 0.3}@SiO{sub 2} core–shell particles and Fe{sub 3}Si/Al{sub 2}O{sub 3} soft magnetic composite core have been synthesized via a modified stöber method combined with following high temperature sintering process. Most of conductive Fe{sub 3}Si{sub 0.7}Al{sub 0.3} particles could be uniformly coated by insulating SiO{sub 2} using the modified stöber method. The Fe{sub 3}Si{sub 0.7}Al{sub 0.3}@SiO{sub 2} core–shell particles exhibited good soft magnetic properties with low coercivity and high saturation magnetization. The reaction 4Al+3SiO{sub 2}=2α-Al{sub 2}O{sub 3}+3Si took place during the sintering process. As a result the new Fe{sub 3}Si/Al{sub 2}O{sub 3} composite was formed. The Fe{sub 3}Si/Al{sub 2}O{submore » 3} composite core displayed more excellent soft magnetic properties, better frequency stability at high frequencies, much higher electrical resistivity and lower core loss than the pure Fe{sub 3}Si{sub 0.7}Al{sub 0.3} core. The method of introducing insulating layers surrounding magnetic particles provides a promising route to develop new and high compact soft magnetic materials with good magnetic and electric properties. - Graphical abstract: In Fe{sub 3}Si/Al{sub 2}O{sub 3} composite, Fe{sub 3}Si phases are separated by Al{sub 2}O{sub 3} layers and the eddy currents are confined in Fe{sub 3}Si phases, thus increasing resistivity and reducing core loss. - Highlights: • Fe{sub 3}Si{sub 0.7}Al{sub 0.3}@SiO{sub 2} core–shell particles and Fe{sub 3}Si/Al{sub 2}O{sub 3} cores were prepared. • Fe{sub 3}Si{sub 0.7}Al{sub 0.3} particles could be uniformly coated by nano-sized SiO{sub 2} clusters. • Fe{sub 3}Si{sub 0.7}Al{sub 0.3}@SiO{sub 2} particles and Fe{sub 3}Si/Al{sub 2}O{sub 3} cores showed good soft magnetic properties. • Fe{sub 3}Si/Al{sub 2}O{sub 3} had lower core loss and better frequency stability than Fe{sub 3}Si{sub 0.7}Al{sub 0.3} cores.« less

Comparison of Multilayer Dielectric Thin Films for Future Metal-Insulator-Metal Capacitors: Al2O3/HfO2/Al2O3 versus SiO2/HfO2/SiO2

NASA Astrophysics Data System (ADS)

Park, Sang-Uk; Kwon, Hyuk-Min; Han, In-Shik; Jung, Yi-Jung; Kwak, Ho-Young; Choi, Woon-Il; Ha, Man-Lyun; Lee, Ju-Il; Kang, Chang-Yong; Lee, Byoung-Hun; Jammy, Raj; Lee, Hi-Deok

2011-10-01

In this paper, two kinds of multilayered metal-insulator-metal (MIM) capacitors using Al2O3/HfO2/Al2O3 (AHA) and SiO2/HfO2/SiO2 (SHS) were fabricated and characterized for radio frequency (RF) and analog mixed signal (AMS) applications. The experimental results indicate that the AHA MIM capacitor (8.0 fF/µm2) is able to provide a higher capacitance density than the SHS MIM capacitor (5.1 fF/µm2), while maintaining a low leakage current of about 50 nA/cm2 at 1 V. The quadratic voltage coefficient of capacitance, α gradually decreases as a function of stress time under constant voltage stress (CVS). The parameter variation of SHS MIM capacitors is smaller than that of AHA MIM capacitors. The effects of CVS on voltage linearity and time-dependent dielectric breakdown (TDDB) characteristics were also investigated.

Microstructure and Properties of the Al-27Si/Cu/Al-50Si Joint Brazed by the Partial Transient Liquid Phase Bonding

NASA Astrophysics Data System (ADS)

Sun, Qingzhu; Wang, Haibo; Yang, Cheng

2018-06-01

Al-27Si and Al-50Si were brazed by using a thin Cu interlayer. The metallurgical bonding without obvious defects is achieved, and a wide brazing seam consisting of fine eutectic structures and coarse Si particles is formed in the Al-27Si/Cu/Al-50Si joint. The deposition of Si element in the liquid phases during solidification results in the formation of the larger Si particles and ultra-small Si particles in the brazing seam. The shear strength of the joint reaches 63 MPa.

Microstructure and Properties of the Al-27Si/Cu/Al-50Si Joint Brazed by the Partial Transient Liquid Phase Bonding

NASA Astrophysics Data System (ADS)

Sun, Qingzhu; Wang, Haibo; Yang, Cheng

2018-04-01

Al-27Si and Al-50Si were brazed by using a thin Cu interlayer. The metallurgical bonding without obvious defects is achieved, and a wide brazing seam consisting of fine eutectic structures and coarse Si particles is formed in the Al-27Si/Cu/Al-50Si joint. The deposition of Si element in the liquid phases during solidification results in the formation of the larger Si particles and ultra-small Si particles in the brazing seam. The shear strength of the joint reaches 63 MPa.

A mechanistic understanding of plagioclase dissolution based on Al occupancy and T-O bond length: from geologic carbon sequestration to ambient conditions.

PubMed

Yang, Yi; Min, Yujia; Jun, Young-Shin

2013-11-14

A quantitative description of how the bulk properties of aluminosilicates affect their dissolution kinetics is important in helping people understand the regulation of atmospheric CO2 concentration by silicate weathering and predict the fate and transport of geologically sequestered CO2 through brine-rock interactions. In this study, we employed a structure model based on the C1 space group to illustrate how differences in crystallographic properties of aluminosilicates, such as T-O (Tetrahedral site-Oxygen) bond length and Al/Si ordering, can result in quantifiable variations in mineral dissolution rates. The dissolution rates of plagioclases were measured under representative geologic carbon sequestration (GCS) conditions (90 °C, 100 atm of CO2, 1.0 M NaCl, and pH ∼ 3.1), and used to validate the model. We found that the logarithm of the characteristic time of the breakdown of Al-O-Si linkages in plagioclases follows a good linear relation with the mineral's aluminum content (nAl). The Si release rates of plagioclases can be calculated based on an assumption of dissolution congruency or on the regularity of Al/Si distribution in the constituent tetrahedra of the mineral. We further extended the application of our approach to scenarios where dissolution incongruency arises because of different linkage reactivities in the solid matrix, and compared the model predictions with published data. The application of our results enables a significant reduction of experimental work for determining the dissolution rates of structurally related aluminosilicates, given a reaction environment.

Mechanisms of aluminium-induced crystallization and layer exchange upon low-temperature annealing of amorphous Si/polycrystalline Al bilayers.

PubMed

Wang, J Y; Wang, Z M; Jeurgens, L P H; Mittemeijer, E J

2009-06-01

Aluminium-induced crystallization (ALIC) of amorphous Si and subsequent layer exchange (ALILE) occur in amorphous-Si/polycrystalline-Al bilayers (a-Si/c-Al) upon annealing at temperatures as low as 165 degrees C and were studied by X-ray diffraction and Auger electron spectroscopic depth profiling. It follows that: (i) nucleation of Si crystallization is initiated at Al grain boundaries and not at the a-Si/c-Al interface; (ii) low-temperature annealing results in a large Si grain size in the continuous c-Si layer produced by ALILE. Thermodynamic model calculations show that: (i) Si can "wet" the Al grain boundaries due to the favourable a-Si/c-Al interface energy (as compared to the Al grain-boundary energy); (ii) the wetting-induced a-Si layer at the Al grain boundary can maintain its amorphous state only up to a critical thickness, beyond which nucleation of Si crystallization takes place; and (iii) a tiny driving force controls the kinetics of the layer exchange.

Nanoindentation investigation of heavy ion irradiated Ti 3(Si,Al)C 2

NASA Astrophysics Data System (ADS)

Liu, X. M.; Le Flem, M.; Béchade, J. L.; Monnet, I.

2010-06-01

Because of good damage tolerance, thermal stability and interesting mechanical properties, Ti 3SiC 2, belonging to M n+1AX n phases, has been considered as a potential candidate material for applications in the future Gas Fast nuclear Reactors (GFR) such as components of fuel cladding working between 500 °C and 800 °C. However, the outstanding mechanical properties of Ti 3SiC 2 related to a layered microstructure could be impacted by irradiation. In this work, high energy Kr and Xe ion irradiated Ti 3Si 0.95Al 0.05C 2 and Ti 3Si 0.90Al 0.10C 2 samples, provided by IMR Shenyang, Chinese Academy of Science, were characterized by nanoindentation technique. After irradiation at room temperature, an increase in hardness with irradiation dose was highlighted. Nevertheless, some damage tolerance remained because of preservation of the typical MAX layered structure. Irradiations at 300 °C and 500 °C lead to less significant increase suggesting irradiation defect annealing. A complete recovery of the properties at 800 °C seems to be obtained.

Heterogeneous Integration of Epitaxial Ge on Si using AlAs/GaAs Buffer Architecture: Suitability for Low-power Fin Field-Effect Transistors

PubMed Central

Hudait, Mantu K.; Clavel, Michael; Goley, Patrick; Jain, Nikhil; Zhu, Yan

2014-01-01

Germanium-based materials and device architectures have recently appeared as exciting material systems for future low-power nanoscale transistors and photonic devices. Heterogeneous integration of germanium (Ge)-based materials on silicon (Si) using large bandgap buffer architectures could enable the monolithic integration of electronics and photonics. In this paper, we report on the heterogeneous integration of device-quality epitaxial Ge on Si using composite AlAs/GaAs large bandgap buffer, grown by molecular beam epitaxy that is suitable for fabricating low-power fin field-effect transistors required for continuing transistor miniaturization. The superior structural quality of the integrated Ge on Si using AlAs/GaAs was demonstrated using high-resolution x-ray diffraction analysis. High-resolution transmission electron microscopy confirmed relaxed Ge with high crystalline quality and a sharp Ge/AlAs heterointerface. X-ray photoelectron spectroscopy demonstrated a large valence band offset at the Ge/AlAs interface, as compared to Ge/GaAs heterostructure, which is a prerequisite for superior carrier confinement. The temperature-dependent electrical transport properties of the n-type Ge layer demonstrated a Hall mobility of 370 cm2/Vs at 290 K and 457 cm2/Vs at 90 K, which suggests epitaxial Ge grown on Si using an AlAs/GaAs buffer architecture would be a promising candidate for next-generation high-performance and energy-efficient fin field-effect transistor applications. PMID:25376723

Ferric iron partitioning between plagioclase and silicate liquid: thermodynamics and petrological applications

NASA Astrophysics Data System (ADS)

Sugawara, Toru

2001-06-01

A series of Fe and Mg partition experiments between plagioclase and silicate liquid were performed in the system SiO2-Al2O3-Fe2O3-FeO-MgO-CaO-Na2O under oxygen fugacities from below the IW buffer up to that of air. A thermodynamic model of plagioclase solid solution for the (CaAl,NaSi,KSi)(Fe3+,Al3+)Si2O8-Ca(Fe2+,Mg)Si3O8 system is proposed and is calibrated by regression analysis based on new and previously reported experimental data of Fe and Mg partitioning between plagioclase and silicate liquid, and reported thermodynamic properties of end members, ternary feldspar and silicate liquid. Using the derived thermodynamic model, FeOt, MgO content and Mg/(Fet+Mg) in plagioclase can be predicted from liquid composition with standard deviations of +/-0.34 wt% (relative error =9%) and +/-0.08 wt% (14%) and +/-0.7 (8%) respectively. Calculated Fe3+-Al exchange chemical potentials of plagioclase, $μ { Fe{ 3 + } ( {Al} ){ - 1} }{ Pl} agree with those calculated using reported thermodynamic models for multicomponent spinel, μ { Fe{ 3 + } ( {Al} ){ - 1} }{ Sp} and clinopyroxene, μ { Fe{ 3 + } ( {Al} ){ - 1} }{ Cpx} $ . The FeOt content of plagioclase coexisting with spinel or clinopyroxene is affected by Fe3+/(Fe3++Al) and Mg/(Fe+Mg) of spinel or clinopyroxene and temperature, while it is independent of the anorthite content of plagioclase. Three oxygen barometers based on the proposed model are investigated. Although the oxygen fugacities predicted by the plagioclase-liquid oxygen barometer are scattered, this study found that plagioclase-spinel-clinopyroxene-oxygen and plagioclase-olivine-oxygen equilibria can be used as practical oxygen barometers. As a petrological application, prediction of plagioclase composition and fO2 are carried out for the Upper Zone of the Skaergaard intrusion. The estimated oxygen fugacities are well below QFM buffer and consistent with the estimation of oxidization states in previous studies.

Structure and superconductivity in the ternary silicide CaAlSi

NASA Astrophysics Data System (ADS)

Ma, Rong; Huang, Gui-Qin; Liu, Mei

2007-06-01

Using the linear response-linearized Muffin-tin orbital (LR-LMTO) method, we study the electronic band structure, phonon spectra, electron-phonon coupling and superconductivity for c-axis ferromagnetic-like (F-like) and antiferromagnetic-like (AF-like) structures in ternary silicide CaAlSi. The following conclusions are drawn from our calculations. If Al and Si atoms are assumed to arrange along the c axis in an F-like long-range ordering (-Al-Al-Al-and-Si-Si-Si-), one could obtain the ultrasoft B1g phonon mode and thus very strong electron-phonon coupling in CaAlSi. However, the appearance of imaginary frequency phonon modes indicates the instability of such a structure. For Al and Si atoms arranging along the c axis in an AF-like long-range ordering (-Al-Si-Al-), the calculated electron-phonon coupling constant is equal to 0.8 and the logarithmically averaged frequency is 146.8 K. This calculated result can correctly yield the superconducting transition temperature of CaAlSi by the standard BCS theory in the moderate electron-phonon coupling strength. We propose that an AF-like superlattice model for Al (or Si) atoms along the c direction may mediate the inconsistency estimated from theory and experiment, and explain the anomalous superconductivity in CaAlSi.

A high-performance nanoporous Si/Al2O3 foam lithium-ion battery anode fabricated by selective chemical etching of the Al-Si alloy and subsequent thermal oxidation.

PubMed

Hwang, Gaeun; Park, Hyungmin; Bok, Taesoo; Choi, Sinho; Lee, Sungjun; Hwang, Inchan; Choi, Nam-Soon; Seo, Kwanyong; Park, Soojin

2015-03-14

Nanostructured micrometer-sized Al-Si particles are synthesized via a facile selective etching process of Al-Si alloy powder. Subsequent thin Al2O3 layers are introduced on the Si foam surface via a selective thermal wet oxidation process of etched Al-Si particles. The resulting Si/Al2O3 foam anodes exhibit outstanding cycling stability (a capacity retention of 78% after 300 cycles at the C/5 rate) and excellent rate capability.

A new titanium-bearing calcium aluminosilicate phase. 2: Crystallography and crystal chemistry of grains formed in slowly cooled melts with bulk compositions of calcium-aluminium-rich inclusions

NASA Technical Reports Server (NTRS)

Barber, David J.; Beckett, John R.; Paque, Julie M.; Stolper, Edward

1994-01-01

The crystallography and crystal chemistry of a new calcium- titanium-aluminosilicate mineral (UNK) observed in synthetic analogs to calcium-aluminum-rich inclusions (CAIs) from carbonaceous chondrites was studied by electron diffraction techniques. The unit cell is primitive hexagonal or trigonal, with a = 0.790 +/- 0.02 nm and c = 0.492 +/- 0.002 nm, similar to the lattice parameters of melilite and consistent with cell dimensions for crystals in a mixer furnace slag described by Barber and Agrell (1994). The phase frequently displays an epitactic relationship in which melilite acts as the host, with (0001)(sub UNK) parallel (001)(sub mel) and zone axis group 1 0 -1 0(sub UNK) parallel zone axis group 1 0 0(sub mel). If one of the two space groups determined by Barber and Agrell (1994) for their sample of UNK is applicable (P3m1 or P31m), then the structure is probably characterized by puckered sheets of octahedra and tetrahedra perpendicular to the c-axis with successive sheets coordinated by planar arrays of Ca. In this likely structure, each unit cell contains three Ca sites located in mirror planes, one octahedrally coordinated cation located along a three-fold axis and five tetrahedrally coordinated cations, three in mirrors and two along triads. The octahedron contains Ti but, because there are 1.3-1.9 cations of Ti/formula unit, some of the Ti must also be in tetrahedral coordination, an unusual but not unprecedented situation for a silicate. Tetrahedral sites in mirror planes would contain mostly Si, with lesser amounts of Al while those along the triads correspondingly contain mostly Al with subordinate Ti. The structural formula, therefore, can be expressed as Ca(sub 3)(sup VIII)(Ti,Al)(sup VI)(Al,Ti,Si)(sub 2)(sup IV)(Si,Al)(sub 3)(sup IV)O14 with Si + Ti = 4. Compositions of meteoritic and synthetic Ti-bearing samples of the phase can be described in terms of a binary solid solution between the end-members Ca3TiAl2Si3O14 and Ca3Ti(AlTi)(AlSi2)O14. A Ti-free analog with a formula of Ca3Al2Si4O14 synthesized by Paque et al. (1994) is thought to be related structurally but with the octahedral site being occupied by Al, that is, Ca(sub 3)(sup VIII)Al(sup VI)(Al,Si)(sub 2)(sup IV)(Si)(sub 3)(sup IV)O14.

Synthesis, structure, and luminescence properties of SrSiAl2O3N2:Eu(2+) phosphors for light-emitting devices and field emission displays.

PubMed

Wang, Xicheng; Zhao, Zhengyan; Wu, Quansheng; Li, Yanyan; Wang, Chuang; Mao, Aijun; Wang, Yuhua

2015-06-28

A series of SrSiAl2O3N2:Eu(2+) (0.005 ≤x≤ 0.05) phosphors were successfully synthesized through a pressureless, facile, and efficient solid state route. The crystal structure, band structure, and their photoluminescence and cathodoluminescence properties were investigated in detail. The phosphors exhibit rod shape morphology with a uniform Eu(2+) distribution. Under n-UV excitation the emission spectra shift from 477 to 497 nm with an increase of Eu(2+) concentration. The concentration quenching mechanism of Eu(2+) emission was dominated by the dipole-dipole interaction. The thermal stability is comparable to that of the commercial Ba2SiO4:Eu(2+) phosphor. The phosphor also exhibits high current saturation and high resistance under low voltage electron bombardment. All the results indicate that the SrSiAl2O3N2:Eu(2+) phosphors can be considered as candidates for application in both white LEDs and FEDs.

Entirely relaxed lattice-mismatched GaSb/GaAs/Si(001) heterostructure grown via metalorganic chemical vapor deposition

NASA Astrophysics Data System (ADS)

Ha, Minh Thien Huu; Hoang Huynh, Sa; Binh Do, Huy; Nguyen, Tuan Anh; Luc, Quang Ho; Lee, Ching Ting; Chang, Edward Yi

2018-05-01

A GaSb epilayer is grown on a GaAs/Si(001) epitaxial substrate via metalorganic chemical vapor deposition. High-resolution transmission electron microscopy micrographs and high-resolution X-ray reciprocal space mapping indicate an entirely relaxed interfacial misfit (IMF) array GaSb epilayer. The valence-band offset and conduction-band offset of the Al2O3/GaSb/GaAs/Si structure are estimated to be 2.39 and 3.65 eV, respectively. The fabricated Al2O3/p-GaSb/GaAs/Si MOS capacitors exhibited good capacitance–voltage characteristics with a small accumulation frequency dispersion of approximately 1.05% per decade. These results imply that the GaSb epilayer grown on the GaAs/Si platform in the IMF mode can be used for future complementary metal–oxide semiconductor applications.

Influence of heat-treated Al-Si coating on the weldability and microstructural inhomogeneity for hot stamped steel resistance nut projection welds

NASA Astrophysics Data System (ADS)

Chun, Eun-Joon; Lim, Sung-Sang; Kim, Young-Tae; Nam, Ki-Sung; Kim, Young-Min; Park, Young-Whan; Murugan, Siva Prasad; Park, Yeong-Do

2018-03-01

Resistance nut projection weldability of Al-Si coated hot stamped steel (HSS) was investigated under the viewpoint of weldable current range and joint strength (pull-out load). The microstructural inhomogeneities in the welds were also studied in order to elucidate the factors affecting the joint strength of the welds. The weldability of the given Al-Si coated HSS was compared with the weldability of an identical HSS without the Al-Si coating (Al-Si coating was polished out) and Zn coated dual phase steel. The weldable current range of Al-Si coated HSS was found to be narrower than that of the other materials. Furthermore, the average pull-out load within the weldable current range of the Al-Si coated HSS was the lowest among the three materials. The reason for poor weld mechanical property of the Al-Si coated hot-stamped steel was attributed to the microstructural inhomogeneities such as unmixed Al-Si coating layer at the edge of the nugget and the second phase Fe3(Al, Si) intermetallic compound. The formation of Fe3(Al, Si) phase was attributed to the solidification segregation of Al and Si during the weld solidification and was confirmed with the numerical analysis of solidification segregation.

Al and Mg Alloys for Aerospace Applications Using Rapid Solidification and Power Metallurgy Processing.

DTIC Science & Technology

1981-10-07

primary solidification phase in the alloy in this condition was identified by CBED as Mg 2 Si , which formed dendrites within the matrix. Each... solidification below the extended c-liquidus. Evolution of Microstructure in Melt-spun Mg- Si Alloys -, The microstructurcs observed in the alloys can...solidificaion pr(es .. in the cellular (dendritic) regime. Solidification of the 5.0 wt.% Si alloy occurs in the coupled eutectic region, and the 8.0 wt.% Si

Effect of Si content on microstructure and thermo-physical properties of the joint of Sip/6063Al composite by laser melting deposition

NASA Astrophysics Data System (ADS)

Lei, Zhenglong; Tian, Ze; Li, Peng; Chen, Yanbin; Zhang, Hengquan; Gu, Jingyan; Su, Xuan

2017-12-01

Laser melting deposition (LMD), an additive manufacturing-based technology, was utilized to join Sip/6063Al composite creatively with different Si weight contents (Al-Si 5%, 12%, 20% and 30%). Influence of the Si content on the constitutional phases, microstructural characteristics, and thermo-physical properties of the layer by layer built-up weld beads was investigated. Experimental results showed that the increasing of deposited Si content could lead to a marked increment of both size and volume of precipitated Si phase, and the circled α-Al phase decreased as a whole. The Si/Al interface began to decrease for the sample Al-Si30 wt.% due to the connection of Si phases. The α-Al phase within the (Al, Si) eutectic were observed to exhibit two sub-micron solidification morphologies, columnar grains and equiaxed grains, respectively. In general, by increasing the content of the deposited Si, the thermal conductivity decreased owing to the decreasing of α-Al phase with high conductivity, and the coefficient of thermal expansion (CTE) had the same varying trend which was attributed to the increasing volume fraction of stiff precipitated Si phase and Si-Si contiguity.

Epitaxial Gd2O3 on GaN and AlGaN: a potential candidate for metal oxide semiconductor based transistors on Si for high power application

NASA Astrophysics Data System (ADS)

Ghosh, Kankat; Das, S.; Khiangte, K. R.; Choudhury, N.; Laha, Apurba

2017-11-01

We report structural and electrical properties of hexagonal Gd2O3 grown epitaxially on GaN/Si (1 1 1) and AlGaN/GaN/Si(1 1 1) virtual substrates. GaN and AlGaN/GaN heterostructures were grown on Si(1 1 1) substrates by plasma assisted molecular beam epitaxy (PA-MBE), whereas the Gd2O3 layer was grown by the pulsed laser ablation (PLA) technique. Initial structural characterizations show that Gd2O3 grown on III-nitride layers by PLA, exhibit a hexagonal structure with an epitaxial relationship as {{≤ft[ 0 0 0 1 \\right]}G{{d2}{{O}3}}}||{{≤ft[ 0 0 0 1 \\right]}GaN} and {{≤ft[ 1 \\bar{1} 0 0 \\right]}G{{d2}{{O}3}}}||{{≤ft[ 1 \\bar{1} 0 0 \\right]}GaN} . X-ray photoelectron measurements of the valence bands revealed that Gd2O3 exhibits band offsets of 0.97 eV and 0.4 eV, for GaN and Al0.3Ga0.7N, respectively. Electrical measurements such as capacitance-voltage and leakage current characteristics further confirm that epi-Gd2O3 on III-nitrides could be a potential candidate for future metal-oxide-semiconductor (MOS)-based transistors also for high power applications in radio frequency range.

Fabrication and characterization of Al{sub 2}O{sub 3} /Si composite nanodome structures for high efficiency crystalline Si thin film solar cells

DOE Office of Scientific and Technical Information (OSTI.GOV)

Zhang, Ruiying, E-mail: ryzhang2008@sinano.ac.cn; State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, 865 Changning Road, Shanghai 200050 China; Zhu, Jian

2015-12-15

We report on our fabrication and characterization of Al{sub 2}O{sub 3}/Si composite nanodome (CND) structures, which is composed of Si nanodome structures with a conformal cladding Al{sub 2}O{sub 3} layer to evaluate its optical and electrical performance when it is applied to thin film solar cells. It has been observed that by application of Al{sub 2}O{sub 3}thin film coating using atomic layer deposition (ALD) to the Si nanodome structures, both optical and electrical performances are greatly improved. The reflectivity of less than 3% over the wavelength range of from 200 nm to 2000 nm at an incident angle from 0°more » to 45° is achieved when the Al{sub 2}O{sub 3} film is 90 nm thick. The ultimate efficiency of around 27% is obtained on the CND textured 2 μm-thick Si solar cells, which is compared to the efficiency of around 25.75% and 15% for the 2 μm-thick Si nanodome surface-decorated and planar samples respectively. Electrical characterization was made by using CND-decorated MOS devices to measure device’s leakage current and capacitance dispersion. It is found the electrical performance is sensitive to the thickness of the Al{sub 2}O{sub 3} film, and the performance is remarkably improved when the dielectric layer thickness is 90 nm thick. The leakage current, which is less than 4x10{sup −9} A/cm{sup 2} over voltage range of from -3 V to 3 V, is reduced by several orders of magnitude. C-V measurements also shows as small as 0.3% of variation in the capacitance over the frequency range from 10 kHz to 500 kHz, which is a strong indication of surface states being fully passivated. TEM examination of CND-decorated samples also reveals the occurrence of SiO{sub x} layer formed between the interface of Si and the Al{sub 2}O{sub 3} film, which is thin enough that ensures the presence of field-effect passivation, From our theoretical and experimental study, we believe Al{sub 2}O{sub 3} coated CND structures is a truly viable approach to achieving higher device efficiency.« less

Distribution Behavior of B and P during Al-Si Melt Directional Solidification with Open-Ended Crucible

NASA Astrophysics Data System (ADS)

Bai, Xiaolong; Ban, Boyuan; Li, Jingwei; Peng, Zhijian; Chen, Jian

2018-03-01

Distribution behavior of B and P during directional solidification of Al-20Si, Al-30Si and Al-40Si alloys has been investigated. Macrostructure of the Al-Si alloy ingots and concentration profile of elements B and P reveal that the elements segregate to eutectic Al-Si melt during growth of primary Si flakes, and P gradually segregates to the top of the ingots during directional solidification. An apparent segregation coefficient, ka, is introduced to describe the segregation behavior of B and P between the primary Si and the Al-Si melt and compared with thermodynamic theoretical equilibrium coefficients. The apparent segregation coefficients of B and P decrease with increase of solidification temperature.

On Multi-Objective Based Constitutive Modelling Methodology and Numerical Validation in Small-Hole Drilling of Al6063/SiCp Composites

PubMed Central

Xiang, Junfeng; Xie, Lijing; Gao, Feinong; Zhang, Yu; Yi, Jie; Wang, Tao; Pang, Siqin; Wang, Xibin

2018-01-01

Discrepancies in capturing material behavior of some materials, such as Particulate Reinforced Metal Matrix Composites, by using conventional ad hoc strategy make the applicability of Johnson-Cook constitutive model challenged. Despites applicable efforts, its extended formalism with more fitting parameters would increase the difficulty in identifying constitutive parameters. A weighted multi-objective strategy for identifying any constitutive formalism is developed to predict mechanical behavior in static and dynamic loading conditions equally well. These varying weighting is based on the Gaussian-distributed noise evaluation of experimentally obtained stress-strain data in quasi-static or dynamic mode. This universal method can be used to determine fast and directly whether the constitutive formalism is suitable to describe the material constitutive behavior by measuring goodness-of-fit. A quantitative comparison of different fitting strategies on identifying Al6063/SiCp’s material parameters is made in terms of performance evaluation including noise elimination, correlation, and reliability. Eventually, a three-dimensional (3D) FE model in small-hole drilling of Al6063/SiCp composites, using multi-objective identified constitutive formalism, is developed. Comparison with the experimental observations in thrust force, torque, and chip morphology provides valid evidence on the applicability of the developed multi-objective identification strategy in identifying constitutive parameters. PMID:29324688

Understanding the Relationship Between Structure and Thermophysical Properties of CaO-SiO2-MgO-Al2O3 Molten Slags

NASA Astrophysics Data System (ADS)

Sun, Yongqi; Wang, Hao; Zhang, Zuotai

2018-04-01

In the present work, the relationship between the microscopic structure and macroscopic thermophysical properties in a basic CaO-SiO2-MgO-Al2O3 quaternary system was identified using Fourier transformation infrared, Raman and 27Al magic angular spinning nuclear magnetic resonance (MAS-NMR) techniques. The Raman spectra quantitatively proved that with increasing Al2O3 content, the concentrations of the symmetric units of Q 0(Si) and Q 2(Si) decreased, while those of the asymmetric units of Q 1(Si) and Q 3(Si) increased; consequently, the degree of polymerization of the networks increased, which resulted in an increase in slag viscosity. The 27Al MAS-NMR spectra demonstrated that three structural units of Al atoms, namely, AlO4, AlO5, and AlO6, mainly existed in the networks. With increasing Al2O3 content, the concentration of AlO4 slightly decreased, while those of AlO5 and AlO6 increased; overall, Al2O3 acted as a network former in the present system. The increasing Al2O3 content led to additional AlO6 and Si-NBO-Ca-NBO-Al frameworks, which replaced Si-NBO-Ca-NBO-Si in the networks (NBO: non-bridging oxygen) and induced a change in the primarily precipitated crystalline phase from Ca2MgSi2O7 and Ca2Al2SiO7 to MgAlO4.

Monolithic composite “pressure + acceleration + temperature + infrared” sensor using a versatile single-sided “SiN/Poly-Si/Al” process-module.

PubMed

Ni, Zao; Yang, Chen; Xu, Dehui; Zhou, Hong; Zhou, Wei; Li, Tie; Xiong, Bin; Li, Xinxin

2013-01-16

We report a newly developed design/fabrication module with low-cost single-sided "low-stress-silicon-nitride (LS-SiN)/polysilicon (poly-Si)/Al" process for monolithic integration of composite sensors for sensing-network-node applications. A front-side surface-/bulk-micromachining process on a conventional Si-substrate is developed, featuring a multifunctional SiN/poly-Si/Al layer design for diverse sensing functions. The first "pressure + acceleration + temperature + infrared" (PATIR) composite sensor with the chip size of 2.5 mm × 2.5 mm is demonstrated. Systematic theoretical design and analysis methods are developed. The diverse sensing components include a piezoresistive absolute-pressure sensor (up to 700 kPa, with a sensitivity of 49 mV/MPa under 3.3 V supplied voltage), a piezoresistive accelerometer (±10 g, with a sensitivity of 66 μV/g under 3.3 V and a -3 dB bandwidth of 780 Hz), a thermoelectric infrared detector (with a responsivity of 45 V/W and detectivity of 3.6 × 107 cm·Hz1/2/W) and a thermistor (-25-120 °C). This design/fabrication module concept enables a low-cost monolithically-integrated "multifunctional-library" technique. It can be utilized as a customizable tool for versatile application-specific requirements, which is very useful for small-size, low-cost, large-scale sensing-network node developments.

Feasibility study on development of metal matrix composite by microwave stir casting

NASA Astrophysics Data System (ADS)

Lingappa, S. M.; Srinath, M. S.; Amarendra, H. J.

2018-04-01

Need for better service oriented materials has boosted the demand for metal matrix composite materials, which can be developed to have necessary properties. One of the most widely utilized metal matrix composite is Al-SiC, which is having a matrix made of aluminium metal and SiC as reinforcement. Lightweight and conductivity of aluminium, when combined with hardness and wear resistance of SiC provides an excellent platform for various applications in the field of electronics, automotives, and aerospace and so on. However, uniform distribution of reinforcement particles is an issue and has to be addressed. The present study is an attempt made to develop Al-SiC metal matrix composite by melting base metal using microwave hybrid heating technique, followed by addition of reinforcement and stirring the mixture for obtaining homogenous mixture. X-Ray Diffraction analysis shows the presence of aluminium and SiC in the cast material. Further, microstructural study shows the distribution of SiC particles in the grain boundaries.

Role of an ultra-thin AlN/GaN superlattice interlayer on the strain engineering of GaN films grown on Si(110) and Si(111) substrates by plasma-assisted molecular beam epitaxy

DOE Office of Scientific and Technical Information (OSTI.GOV)

Shen, X. Q.; Takahashi, T.; Matsuhata, H.

2013-12-02

We investigate the role of an ultra-thin AlN/GaN superlattice interlayer (SL-IL) on the strain engineering of the GaN films grown on Si(110) and Si(111) substrates by plasma-assisted molecular beam epitaxy. It is found that micro-cracks limitted only at the SL-IL position are naturally generated. These micro-cracks play an important role in relaxing the tensile strain caused by the difference of the coefficient of thermal expansion between GaN and Si and keeping the residual strain in the crack-free GaN epilayers resulted from the SL-IL during the growth. The mechanism understanding of the strain modulation by the SL-IL in the GaN epilayersmore » grown on Si substrates makes it possible to design new heterostructures of III-nitrides for optic and electronic device applications.« less

Role of an ultra-thin AlN/GaN superlattice interlayer on the strain engineering of GaN films grown on Si(110) and Si(111) substrates by plasma-assisted molecular beam epitaxy

NASA Astrophysics Data System (ADS)

Shen, X. Q.; Takahashi, T.; Rong, X.; Chen, G.; Wang, X. Q.; Shen, B.; Matsuhata, H.; Ide, T.; Shimizu, M.

2013-12-01

We investigate the role of an ultra-thin AlN/GaN superlattice interlayer (SL-IL) on the strain engineering of the GaN films grown on Si(110) and Si(111) substrates by plasma-assisted molecular beam epitaxy. It is found that micro-cracks limitted only at the SL-IL position are naturally generated. These micro-cracks play an important role in relaxing the tensile strain caused by the difference of the coefficient of thermal expansion between GaN and Si and keeping the residual strain in the crack-free GaN epilayers resulted from the SL-IL during the growth. The mechanism understanding of the strain modulation by the SL-IL in the GaN epilayers grown on Si substrates makes it possible to design new heterostructures of III-nitrides for optic and electronic device applications.

Spotting 2D atomic layers on aluminum nitride thin films.

PubMed

Chandrasekar, Hareesh; Bharadwaj B, Krishna; Vaidyuala, Kranthi Kumar; Suran, Swathi; Bhat, Navakanta; Varma, Manoj; Srinivasan Raghavan

2015-10-23

Substrates for 2D materials are important for tailoring their fundamental properties and realizing device applications. Aluminum nitride (AIN) films on silicon are promising large-area substrates for such devices in view of their high surface phonon energies and reasonably large dielectric constants. In this paper epitaxial layers of AlN on 2″ Si wafers have been investigated as a necessary first step to realize devices from exfoliated or transferred atomic layers. Significant thickness dependent contrast enhancements are both predicted and observed for monolayers of graphene and MoS2 on AlN films as compared to the conventional SiO2 films on silicon, with calculated contrast values approaching 100% for graphene on AlN as compared to 8% for SiO2 at normal incidences. Quantitative estimates of experimentally measured contrast using reflectance spectroscopy show very good agreement with calculated values. Transistors of monolayer graphene on AlN films are demonstrated, indicating the feasibility of complete device fabrication on the identified layers.

30 nm T-gate enhancement-mode InAlN/AlN/GaN HEMT on SiC substrates for future high power RF applications

NASA Astrophysics Data System (ADS)

Murugapandiyan, P.; Ravimaran, S.; William, J.

2017-08-01

The DC and RF performance of 30 nm gate length enhancement mode (E-mode) InAlN/AlN/GaN high electron mobility transistor (HEMT) on SiC substrate with heavily doped source and drain region have been investigated using the Synopsys TCAD tool. The proposed device has the features of a recessed T-gate structure, InGaN back barrier and Al2O3 passivated device surface. The proposed HEMT exhibits a maximum drain current density of 2.1 A/mm, transconductance {g}{{m}} of 1050 mS/mm, current gain cut-off frequency {f}{{t}} of 350 GHz and power gain cut-off frequency {f}\\max of 340 GHz. At room temperature the measured carrier mobility (μ), sheet charge carrier density ({n}{{s}}) and breakdown voltage are 1580 cm2/(V \\cdot s), 1.9× {10}13 {{cm}}-2, and 10.7 V respectively. The superlatives of the proposed HEMTs are bewitching competitor or future sub-millimeter wave high power RF VLSI circuit applications.

Electronic structures of Al-Si clusters and the magic number structure Al8Si4

NASA Astrophysics Data System (ADS)

Du, Ning; Su, Mingzhi; Chen, Hongshan

2018-02-01

The low-energy structures of Al8Sim (m = 1-6) have been determined by using the genetic algorithm combined with density functional theory and the Second-order Moller-Plesset perturbation theory (MP2) models. The results show that the close-packed structures are preferable in energy for Al-Si clusters and in most cases there exist a few isomers with close energies. The valence molecular orbitals, the orbital level structures and the electron localisation function (ELF) consistently demonstrate that the electronic structures of Al-Si clusters can be described by the jellium model. Al8Si4 corresponds to a magic number structure with pronounced stability and large energy gap; the 40 valence electrons form closed 1S21P61D102S21F142P6 shells. The ELF attractors also suggest weak covalent Si-Si, Si-Al and Al-Al bonding, and doping Si in aluminium clusters promotes the covalent interaction between Al atoms.

Study on the Anti-Poison Performance of Al-Y-P Master Alloy for Impurity Ca in Aluminum Alloys.

PubMed

Zuo, Min; Dong, Yu; Zhao, Degang; Wang, Yan; Teng, Xinying

2017-11-26

In this article, the anti-poison performance of novel Al-6Y-2P master alloy for impurity Ca in hypereutectic Al-Si alloys was investigated in detail. According to the microstructural analysis, it can be found that the primary Si and eutectic Si particles could be relatively modified and refined. In order to investigate the influence mechanism of Ca on the limited refinement performance of Al-6Y-2P master alloy, types of Al-xSi-2Ca-3Y-1P (x = 0, 6, 12, 18, and 30) alloys were prepared. It is observed that Ca takes the form of more stable Ca3P2 compounds by reacting with YP, and the surface of Ca3P2 particles are unsmooth, and even some have wrinkles in Al Al-2Ca-3Y-1P alloy. With the increase of Si content in Al-xSi-2Ca-3Y-1P (x = 6, 12, 18 and 30) systems, the multi-encapsulation structures, i.e., the phosphide (AlP and YP), hexagonal Al2Si2Ca, the Al3Si2Y2 or primary Si from inside to outside in order were examined.The excapsulation of YP and AlP caused by Al2Si2Ca might be the reason for the limited refinement effect of Al-6Y-2P master alloy for hypereutectic Al-18Si alloys.

Development and characterization of Powder Metallurgy (PM) 2XXX series Al alloy products and Metal Matrix Composite (MMC) 2XXX Al/SiC materials for high temperature aircraft structural applications

NASA Technical Reports Server (NTRS)

Chellman, D. J.; Gurganus, T. B.; Walker, J. A.

1992-01-01

The results of a series of material studies performed by the Lockheed Aeronautical Systems Company over the time period from 1980 to 1991 are discussed. The technical objective of these evaluations was to develop and characterize advanced aluminum alloy materials with temperature capabilities extending to 350 F. An overview is given of the first five alloy development efforts under this contract. Prior work conducted during the first five modifications of the alloy development program are listed. Recent developments based on the addition of high Zr levels to an optimum Al-Cu-Mg alloy composition by powder metallurgy processing are discussed. Both reinforced and SiC or B4C ceramic reinforced alloys were explored to achieve specific target goals for high temperature aluminum alloy applications.

Crystallization of silicon-germanium by aluminum-induced layer exchange

NASA Astrophysics Data System (ADS)

Isomura, Masao; Yajima, Masahiro; Nakamura, Isao

2018-02-01

We have studied the crystallization of amorphous silicon-germanium (a-SiGe) by aluminum (Al)-induced layer exchange (ALILE) with a starting structure of glass/Al/Al oxide/a-SiGe. We examined ALILE at 450 °C, which is slightly higher than the eutectic temperature of Ge and Al, in order to shorten the ALILE time. We successfully produced c-SiGe films oriented in the (111) direction for 16 h without significant alloying. The thickness of Al layers should be 2800 Å or more to complete the ALILE for the a-SiGe layers of 2000-2800 Å thickness. When the Al layer is as thick as the a-SiGe layer, almost uniform c-SiGe is formed on the glass substrate. On the other hand, the islands of c-SiGe are formed on the glass substrate when the Al layer is thicker than the a-SiGe layer. The islands become smaller with thicker Al layers because more excess Al remains between the SiGe islands. The results indicate that the configuration of c-SiGe can be altered from a uniform structure to island structures of various sizes by changing the ratio of a-SiGe thickness to Al thickness.

Tunable emission in Ln3+ (Ce3+/Dy3+, Ce3+/Tb3+) doped KNa3Al4Si4O16 phosphor synthesized by combustion method

NASA Astrophysics Data System (ADS)

Kolte, M. M.; Pawade, V. B.; Bhattacharya, A. B.; Dhoble, S. J.

2018-05-01

Ln3+ (Ln = Ce3+/Dy3+, Ce3+/Tb3+) doped KNa3Al4Si4O16 phosphor has been synthesized by Combustion method (CS) at 550° C successfully. Ln3+ (Ln = Ce3+, Dy3+, Tb3+) ions when doped in KNa3Al4Si4O16 host lattice, it shows blue and green emission band under the near Ultraviolet (NUV) excitation wavelength. The Photoluminescence excitation (PLE) and emission spectra are observed due to f-f and d-f transition of rare earth ions. Also, an effective energy transfer (ET) study from Ce3+ → Dy3+ and Ce3+ → Tb3+ ions has been studied and confirmed on the basis of Dexter-Foster theory. Further synthesized phosphor is well characterized by XRD, SEM, TEM and decay time measurement. However, the analysis of crystallite size, lattice strain has been studied by using theoretical as well as experimental techniques. Hence, the observed tunable emission in Ln3+ doped KNa3Al4Si4O16 phosphor may be applicable for solid state lighting technology.

Structure and Crystallization of Alkaline-Earth Aluminosilicate Glasses: Prevention of the Alumina-Avoidance Principle.

PubMed

Allu, Amarnath R; Gaddam, Anuraag; Ganisetti, Sudheer; Balaji, Sathravada; Siegel, Renée; Mather, Glenn C; Fabian, Margit; Pascual, Maria J; Ditaranto, Nicoletta; Milius, Wolfgang; Senker, Jürgen; Agarkov, Dmitrii A; Kharton, Vladislav V; Ferreira, José M F

2018-05-03

Aluminosilicate glasses are considered to follow the Al-avoidance principle, which states that Al-O-Al linkages are energetically less favorable, such that, if there is a possibility for Si-O-Al linkages to occur in a glass composition, Al-O-Al linkages are not formed. The current paper shows that breaching of the Al-avoidance principle is essential for understanding the distribution of network-forming AlO 4 and SiO 4 structural units in alkaline-earth aluminosilicate glasses. The present study proposes a new modified random network (NMRN) model, which accepts Al-O-Al linkages for aluminosilicate glasses. The NMRN model consists of two regions, a network structure region (NS-Region) composed of well-separated homonuclear and heteronuclear framework species and a channel region (C-Region) of nonbridging oxygens (NBOs) and nonframework cations. The NMRN model accounts for the structural changes and devitrification behavior of aluminosilicate glasses. A parent Ca- and Al-rich melilite-based CaO-MgO-Al 2 O 3 -SiO 2 (CMAS) glass composition was modified by substituting MgO for CaO and SiO 2 for Al 2 O 3 to understand variations in the distribution of network-forming structural units in the NS-region and devitrification behavior upon heat treating. The structural features of the glass and glass-ceramics (GCs) were meticulously assessed by advanced characterization techniques including neutron diffraction (ND), powder X-ray diffraction (XRD), 29 Si and 27 Al magic angle spinning (MAS)-nuclear magnetic resonance (NMR), and in situ Raman spectroscopy. ND revealed the formation of SiO 4 and AlO 4 tetrahedral units in all the glass compositions. Simulations of chemical glass compositions based on deconvolution of 29 Si MAS NMR spectral analysis indicate the preferred formation of Si-O-Al over Si-O-Si and Al-O-Al linkages and the presence of a high concentration of nonbridging oxygens leading to the formation of a separate NS-region containing both SiO 4 and AlO 4 tetrahedra (Si/Al) (heteronuclear) in addition to the presence of Al [4] -O-Al [4] bonds; this region coexists with a predominantly SiO 4 -containing (homonuclear) NS-region. In GCs, obtained after heat treatment at 850 °C for 250 h, the formation of crystalline phases, as revealed from Rietveld refinement of XRD data, may be understood on the basis of the distribution of SiO 4 and AlO 4 structural units in the NS-region. The in situ Raman spectra of the GCs confirmed the formation of a Si/Al structural region, as well as indicating interaction between the Al/Si region and SiO 4 -rich region at higher temperatures, leading to the formation of additional crystalline phases.

Effect of atomic layer deposited Al2O3:ZnO alloys on thin-film silicon photovoltaic devices

NASA Astrophysics Data System (ADS)

Abdul Hadi, Sabina; Dushaq, Ghada; Nayfeh, Ammar

2017-12-01

In this work, we present the effects of the Al2O3:ZnO ratio on the optical and electrical properties of aluminum doped ZnO (AZO) layers deposited by atomic layer deposition, along with AZO application as the anti-reflective coating (ARC) layer and in heterojunction configurations. Here, we report complex refractive indices for AZO layers with different numbers of aluminum atomic cycles (ZnO:Al2O3 = 1:0, 39:1, 19:1, and 9:1) and we confirm their validity by fitting models to experimental data. Furthermore, the most conductive layer (ZnO:Al2O3 = 19:1, conductivity ˜4.6 mΩ cm) is used to fabricate AZO/n+/p-Si thin film solar cells and AZO/p-Si heterojunction devices. The impact of the AZO layer on the photovoltaic properties of these devices is studied by different characterization techniques, resulting in the extraction of recombination and energy band parameters related to the AZO layer. Our results confirm that AZO 19:1 can be used as a low cost and effective conductive ARC layer for solar cells. However, AZO/p-Si heterojunctions suffer from an insufficient depletion region width (˜100 nm) and recombination at the interface states, with an estimated potential barrier of ˜0.6-0.62 eV. The work function of AZO (ZnO:Al2O3 = 19:1) is estimated to be in the range between 4.36 and 4.57 eV. These material properties limit the use of AZO as an emitter in Si solar cells. However, the results imply that AZO based heterojunctions could have applications as low-cost photodetectors or photodiodes, operating under relatively low reverse bias.

Interdiffusion in U 3Si-Al, U 3Si 2-Al, and USi-Al dispersion fuels during irradiation

NASA Astrophysics Data System (ADS)

Kim, Yeon Soo; Hofman, Gerard L.

2011-03-01

Uranium-silicide compound fuel dispersion in an Al matrix is used in research and test reactors worldwide. Interaction layer (IL) growth between fuel particles and the matrix is one of performance issues. The interaction layer growth data for U 3Si, U 3Si 2 and USi dispersions in Al were obtained from both out-of-pile and in-pile tests. The IL is dominantly U(AlSi) 3 from out-of-pile tests, but its (Al + Si)/U ratio from in-pile tests is higher than the out-of-pile data, because of amorphous behavior of the ILs. IL growth correlations were developed for U 3Si-Al and U 3Si 2-Al. The IL growth rates were dependent on the U/Si ratio of the fuel compounds. During irradiation, however, the IL growth rates did not decrease with the decreasing U/Si ratio by fission. It is reasoned that transition metal fission products in the IL compensate the loss of U atoms by providing chemical potential for Al diffusion and volume expansion by solid swelling and gas bubble swelling. The addition of Mo in U 3Si 2 reduces the IL growth rate, which is similar to that of UMo alloy dispersion in a silicon-added Al matrix.

A novel yellow-emitting SrAlSi4N7:Ce3+ phosphor for solid state lighting: Synthesis, electronic structure and photoluminescence properties

NASA Astrophysics Data System (ADS)

Ruan, Jian; Xie, Rong-Jun; Funahashi, Shiro; Tanaka, Yoshinori; Takeda, Takashi; Suehiro, Takayuki; Hirosaki, Naoto; Li, Yuan-Qiang

2013-12-01

Ce3+-doped and Ce3+/Li+-codoped SrAlSi4N7 phosphors were synthesized by gas pressure sintering of powder mixtures of Sr3N2, AlN, α-Si3N4, CeN and Li3N. The phase purity, electronic crystal structure, photoluminescence properties of SrAlSi4N7:Ce3+(Ce3+/Li+) were investigated in this work. The band structure calculated by the DMol3 code shows that SrAlSi4N7 has a direct band gap of 3.87 eV. The single crystal analysis of Ce3+-doped SrAlSi4N7 indicates a disordered Si/Al distribution and nitrogen vacnacy defects. SrAlSi4N7 was identified as a major phase of the fired powders, and Sr5Al5Si21N35O2 and AlN as minor phases. Both Ce3+ and Ce3+/Li+ doped SrAlSi4N7 phosphors can be efficiently excited by near-UV or blue light and show a broadband yellow emission peaking around 565 nm. A highest external quantum efficiency of 38.3% under the 450 nm excitation was observed for the Ce3+/Li+-doped SrAlSi4N7 (5 mol%). A white light LED lamp with color temperature of 6300 K and color rendering index of Ra=78 was achieved by combining Sr0.97Al1.03Si3.997N\\94\\maccounttest14=t0005_18193 7:Ce3+0.03 with a commercial blue InGaN chip. It indicates that SrAlSi4N7:Ce3+ is a promising yellow emitting down-conversion phosphor for white LEDs.

Investigation on mechanical behavior and material characteristics of various weight composition of SiCp reinforced aluminium metal matrix composite

NASA Astrophysics Data System (ADS)

Pichumani, Sivachidambaram; Srinivasan, Raghuraman; Ramamoorthi, Venkatraman

2018-02-01

Aluminium - silicon carbide (Al - SiC) metal matrix composite is produced with following wt % of SiC reinforcement (4%, 8% & 12%) using stir casting method. Mechanical testing such as micro hardness, tensile testing and bend testing were performed. Characterizations, namely micro structure, X-ray diffraction (XRD) analysis, inductive coupled plasma - optical emission spectroscopy (ICP-OES) and scanning electron microscopy (SEM) analysis, were carried out on Al - SiC composites. The presence of SiC on Al - SiC composite is confirmed through XRD technique and microstructure. The percentage of SiC was confirmed through ICP-OES technique. Increase in weight percentage of SiC tends to increase micro hardness, ultimate strength & yield strength but it reduces the bend strength and elongation (%) of the material. SEM factrography of tensile tested fractured samples of Al - 8% SiC & Al - 12% SiC showed fine dimples on fractured surface & coarse dimples fractured surface respectively. This showed significant fracture differences between Al - 8% SiC & Al - 12% SiC. From the above experiment, Al - 8% SiC had good micro hardness, ultimate strength & yield strength without significant loss in elongation (%) & bend strength.

Ab initio calculation of 1H, 17O, 27Al and 29Si NMR parameters, vibrational frequencies and bonding energetics in hydrous silica and Na-aluminosilicate glasses

NASA Astrophysics Data System (ADS)

Kubicki, J. D.; Sykes, D. G.

2004-10-01

Ab initio, molecular orbital (MO) calculations were performed on model systems of SiO 2, NaAlSi 3O 8 (albite), H 2O-SiO 2 and H 2O-NaAlSi 3O 8 glasses. Model nuclear magnetic resonance (NMR) isotropic chemical shifts (δ iso) for 1H, 17O, 27Al and 29Si are consistent with experimental data for the SiO 2, NaAlSi 3O 8, H 2O-SiO 2 systems where structural interpretations of the NMR peak assignments are accepted. For H 2O-NaSi 3AlO 8 glass, controversy has surrounded the interpretation of NMR and infrared (IR) spectra. Calculated δ iso1H, δ iso17O, δ iso27Al and δ iso29Si are consistent with the interpretation of Kohn et al. (1992) that Si-(OH)-Al linkages are responsible for the observed peaks in hydrous Na-aluminosilicate glasses. In addition, a theoretical vibrational frequency associated with the Kohn et al. (1992) model agrees well with the observed shoulder near 900 cm -1 in the IR and Raman spectra of hydrous albite glasses. MO calculations suggest that breaking this Si-(OH)-Al linkage requires ˜+56 to +82 kJ/mol which is comparable to the activation energies for viscous flow in hydrous aluminosilicate melts.

Tribological Performance of Ni3Al Matrix Self-Lubricating Composites Containing Multilayer Graphene and Ti3SiC2 at Elevated Temperatures

NASA Astrophysics Data System (ADS)

Yan, Zhao; Shi, Xiaoliang; Huang, Yuchun; Deng, Xiaobin; Yang, Kang; Liu, Xiyao

2017-09-01

The application of Ni3Al-based alloy (NA) in the field of aerospace was limited by its poor tribological properties. For improving the tribological performance of NA, multilayer graphene (MLG) and Ti3SiC2 were added in Ni3Al matrix composites. Tribological behavior of Ni3Al matrix composites containing 1.5 wt.% MLG and 10 wt.% Ti3SiC2 (NMT) against Si3N4 ball at 12 N-0.2 m/s from 25 to 750 °C was investigated. The results showed that NMT exhibited the excellent tribological behavior [lower friction coefficients (0.26-0.57) and less wear resistance (3.1-6.5 × 10-6 mm3 N-1 m-1)] due to synergetic effect of MLG and Ti3SiC2 over a wide temperature range from 25 to 750 °C. At 25-350 °C, part of MLG enriched on worn surface could play a role in reducing friction and improving wear resistance. At 350-550 °C, although MLG gradually lost the lubricating properties, the partial decomposition of Ti3SiC2 could continually improve the tribological properties of NMT. At 550-750 °C, Ti3SiC2 on worn surface was oxidized to form lubricating film, while Ti3SiC2 in the subsurface played an important role in supporting the film, resulting in the excellent high-temperature tribological performance. The research had good guiding significance for the preparation of wide temperature range self-lubricating material and the study of synergetic effect of complex solid lubricants.

Absorption Amelioration of Amorphous Si Film by Introducing Metal Silicide Nanoparticles.

PubMed

Sun, Hui; Wu, Hsuan-Chung; Chen, Sheng-Chi; Ma Lee, Che-Wei; Wang, Xin

2017-12-01

Amorphous Si (a-Si) films with metal silicide are expected to enhance the absorption ability of pure a-Si films. In this present study, NiSi (20 nm)/Si (40 nm) and AlSi (20 nm)/Si (40 nm) bilayer thin films are deposited through radio frequency (RF) sputtering at room temperature. The influence of the film's composition and the annealing temperature on the film's optical absorption is investigated. The results show that all the NiSi/Si films and AlSi/Si films possess higher absorption ability compared to a pure a-Si film (60 nm). After annealing from 400 to 600 °C under vacuum for 1 h, the Si layer remains amorphous in both NiSi/Si films and AlSi/Si films, while the NiSi layer crystallizes into NiSi 2 phase, whereas Al atoms diffuse through the whole film during the annealing process. Consequently, with increasing the annealing temperature, the optical absorption of NiSi/Si films increases, while that of AlSi/Si films obviously degrades.

Effect of Cr, Ti, V, and Zr Micro-additions on Microstructure and Mechanical Properties of the Al-Si-Cu-Mg Cast Alloy

NASA Astrophysics Data System (ADS)

Shaha, S. K.; Czerwinski, F.; Kasprzak, W.; Friedman, J.; Chen, D. L.

2016-05-01

Uniaxial static and cyclic tests were used to assess the role of Cr, Ti, V, and Zr additions on properties of the Al-7Si-1Cu-0.5Mg (wt pct) alloy in as-cast and T6 heat-treated conditions. The microstructure of the as-cast alloy consisted of α-Al, eutectic Si, and Cu-, Mg-, and Fe-rich phases Al2.1Cu, Al8.5Si2.4Cu, Al5.2CuMg4Si5.1, and Al14Si7.1FeMg3.3. In addition, the micro-sized Cr/Zr/Ti/V-rich phases Al10.7SiTi3.6, Al6.7Si1.2TiZr1.8, Al21.4Si3.4Ti4.7VZr1.8, Al18.5Si7.3Cr2.6V, Al7.9Si8.5Cr6.8V4.1Ti, Al6.3Si23.2FeCr9.2V1.6Ti1.3, Al92.2Si16.7Fe7.6Cr8.3V1.8, and Al8.2Si30.1Fe1.6Cr18.8V3.3Ti2.9Zr were present. During solution treatment, Cu-rich phases were completely dissolved, while the eutectic silicon, Fe-, and Cr/Zr/Ti/V-rich intermetallics experienced only partial dissolution. Micro-additions of Cr, Zr, Ti, and V positively affected the alloy strength. The modified alloy in the T6 temper during uniaxial tensile tests exhibited yield strength of 289 MPa and ultimate tensile strength of 342 MPa, being significantly higher than that for the Al-Si-Cu-Mg base. Besides, the cyclic yield stress of the modified alloy in the T6 state increased by 23 pct over that of the base alloy. The fatigue life of the modified alloy was substantially longer than that of the base alloy tested using the same parameters. The role of Cr, Ti, V, and Zr containing phases in controlling the alloy fracture during static and cyclic loading is discussed.

DOE Office of Scientific and Technical Information (OSTI.GOV)

Huang, Bin, E-mail: huangbin@nwpu.edu.cn; Li, Maohua; Chen, Yanxia

The interfacial reactions of continuous SiC fiber reinforced Ti-6Al-4V matrix composite (SiC{sub f}/Ti-6Al-4V composite) and continuous SiC fiber coated by C reinforced Ti-6Al-4V matrix composite (SiC{sub f}/C/Ti-6Al-4V composite) were investigated by using micro-beam electron diffraction (MBED) and energy disperse spectroscopy (EDS) on transmission electron microscopy (TEM). The sequence of the interfacial reactions in the as-processed and exposed at 900°C for 50h SiC{sub f}/Ti-6Al-4V composites can be described as SiC||TiC||Ti{sub 5}Si{sub 3} + TiC||Ti-6Al-4V and SiC||TiC||Ti{sub 5}Si{sub 3}||TiC||Ti{sub 5}Si{sub 3}||TiC||Ti{sub 5}Si{sub 3}||Ti-6Al-4V, respectively. Additionally, both in as-processed and exposed composites, Ti{sub 3}SiC{sub 2} and Ti{sub 3}Si are absent at the interfaces.more » For the SiC{sub f}/C/Ti-6Al-4V composite exposed at 900 °C for 50 h, the sequence of the interfacial reaction can be described as SiC||C||TiC{sub F}||TiC{sub C}||Ti-6Al-4V before C coating is completely consumed by interfacial reaction. When interfacial reaction consumes C coating completely, the sequence of the interfacial reaction can be described as SiC||TiC||Ti{sub 5}Si{sub 3}||TiC||Ti-6Al-4V. Furthermore, in SiC{sub f}/C/Ti-6Al-4V composite, C coating can absolutely prevent Si diffusion from SiC fiber to matrix. Basing on these results, the model of formation process of the interfacial reaction products in the composites was proposed. - Highlights: • We obtained the sequence of the interfacial reactions in the as-processed and exposed at 900 °C for 50 h SiC{sub f}/Ti-6Al-4 V composites as well as in the SiC{sub f}/C/Ti-6Al-4 V composite exposed at 900 °C for 50 h. • We verified that both in as-processed and exposed SiC{sub f}/Ti-6Al-4 V composites, Ti{sub 3}SiC{sub 2} and Ti{sub 3}Si are absent at the interfaces. • Carbon coating can absolutely prevent silicon diffusion from SiC fiber to matrix. • Basing on these results, the model of formation process of the interfacial reaction products in the composites was proposed.« less

Kinetics and equilibrium adsorption study of selenium oxyanions onto Al/Si and Fe/Si coprecipitates.

PubMed

Chan, Y T; Liu, Y T; Tzou, Y M; Kuan, W H; Chang, R R; Wang, M K

2018-05-01

Inappropriate treatments for the effluents from semiconductor plants might cause the releases and wide distributions of selenium (Se) into the ecosystems. In this study, Al/Si and Fe/Si coprecipitates were selected as model adsorbents as they often formed during the wastewater coagulation process, and the removal efficiency of selenite (SeO 3 ) and selenate (SeO 4 ) onto the coprecipitates were systematically examined. The removal efficiency of SeO 3 and SeO 4 was highly related to surface properties of Al/Si and Fe/Si coprecipitates. The surface-attached Al shell of Al/Si coprecipitates shielded a portion of negative charges from the core SiO 2 , resulting in a higher point of zero charge than that of Fe/Si coprecipitates. Thus, adsorption of SeO 3 /SeO 4 was favorable on the Al/Si coprecipitates. Adsorptions of both SeO 3 and SeO 4 on Al/Si coprecipitates were exothermic reactions. On Fe/Si coprecipitates, while SeO 3 adsorption also showed the exothermic behavior, SeO 4 adsorption occurred as an endothermic reaction. The kinetic adsorption data of SeO 3 /SeO 4 on Al/Si and Fe/Si coprecipitates were described well by the pseudo-second-order kinetic model. SeO 4 and SeO 3 adsorption on Fe/Si or Al/Si were greatly inhibited by the strong PO 4 ligand, whereas the weak ligand such as SO 4 only significantly affected SeO 4 adsorption. The weakest complex between SeO 4 and Al was implied by the essentially SeO 4 desorption as SeO 4 /PO 4 molar ratios decreased from 0.5 to 0.2. These results were further confirmed by the less SeO 4 desorption (41%) from Fe/Si coprecipitates than that from Al/Si coprecipitates (78%) while PO 4 was added sequentially. Copyright © 2018 Elsevier Ltd. All rights reserved.

DOE Office of Scientific and Technical Information (OSTI.GOV)

Arutyunyan, S. S., E-mail: spartakmain@gmail.com; Pavlov, A. Yu.; Pavlov, B. Yu.

The fabrication of a two-layer Si{sub 3}N{sub 4}/SiO{sub 2} dielectric mask and features of its application in the technology of non-fired epitaxially grown ohmic contacts for high-power HEMTs on AlGaN/GaN heterostructures are described. The proposed Si{sub 3}N{sub 4}/SiO{sub 2} mask allows the selective epitaxial growth of heavily doped ohmic contacts by nitride molecular-beam epitaxy and the fabrication of non-fired ohmic contacts with a resistance of 0.15–0.2 Ω mm and a smooth surface and edge morphology.

Study of ultrasonic melt treatment on the quality of horizontal continuously cast Al-1%Si alloy.

PubMed

Li, Xin-Tao; Li, Ting-Ju; Li, Xi-Meng; Jin, Jun-Ze

2006-02-01

The fluctuation of the melt temperature in a tundish was measured during casting and experiments were conducted to investigate the effects of ultrasonic melt treatment on the surface quality and solidification structures of Al-1%Si ingots. The results show that the uniformity of melt temperature was enhanced with the application of ultrasonic melt treatment. When the ultrasonic power is 1,000W, the surface quality was evidently improved and grains of cast ingots were refined. Moreover, EPMA analysis was adopted to study the relationship between the ultrasonic power and boundary segregation of Si element. The result shows that boundary segregation is suppressed with the increase of ultrasonic power and the phenomenon was theoretically interpreted.

Wettability of Molten Aluminum-Silicon Alloys on Graphite and Surface Tension of Those Alloys at 1273 K (1000 °C)

NASA Astrophysics Data System (ADS)

Mao, Weiji; Noji, Takayasu; Teshima, Kenichiro; Shinozaki, Nobuya

2016-06-01

The wettability of molten aluminum-silicon alloys with silicon contents of 0, 6, 10, and 20 mass pct on graphite substrates by changing the placing sequence of aluminum and silicon and the surface tension of those alloys were investigated at 1273 K (1000 °C) using the sessile drop method under vacuum. The results showed that the wetting was not affected by changing the placing sequence of the Al-Si alloys on the graphite substrates. The wettability was not improved significantly upon increasing the Si content from 0 to 10 mass pct, whereas a notable decrease of 22 deg in the contact angle was observed when increasing the Si content from 10 to 20 mass pct. This was attributed to the transformation of the interfacial reaction product from Al4C3 into SiC, provided the addition of Si to Al was sufficient. It was verified that the liquid Al can wet the SiC substrate very well in nature, which might explain why the occurrence of SiC would improve the wettability of the Al-20 mass pct Si alloy on the graphite substrate. The results also showed that the surface tension values of the molten Al-Si alloys decreased monotonously with an increase in Si content, being 875, 801, 770, and 744 mN/m for molten Al, Al-6 mass pct Si, Al-10 mass pct Si, and Al-20 mass pct Si alloys, respectively.

Evolution of AlGaN deep level defects as a function of alloying and compositional grading and resultant impact on electrical conductivity

DOE PAGES

Armstrong, Andrew M.; Allerman, Andrew A.

2017-07-24

AlGaN:Si epilayers with uniform Al compositions of 60%, 70%, 80%, and 90% were grown by metal-organic vapor phase epitaxy along with a compositionally graded, unintentionally doped (UID) AlGaN epilayer with the Al composition varying linearly between 80% and 100%. The resistivity of AlGaN:Si with a uniform composition increased significantly for the Al content of 80% and greater, whereas the graded UID-AlGaN film exhibited resistivity equivalent to 60% and 70% AlGaN:Si owing to polarization-induced doping. Deep level defect studies of both types of AlGaN epilayers were performed to determine why the electronic properties of uniform-composition AlGaN:Si degraded with increased Al content,more » while the electronic properties of graded UID-AlGaN did not. The deep level density of uniform-composition AlGaN:Si increased monotonically and significantly with the Al mole fraction. Conversely, graded-UID AlGaN had the lowest deep level density of all the epilayers despite containing the highest Al composition. These findings indicate that Si doping is an impetus for point defect incorporation in AlGaN that becomes stronger with the increasing Al content. However, the increase in deep level density with the Al content in uniform-composition AlGaN:Si was small compared to the increase in resistivity. This implies that the primary cause for increasing resistivity in AlGaN:Si with the increasing Al mole fraction is not compensation by deep levels but rather increasing activation energy for the Si dopant. As a result, the graded UID-AlGaN films maintained low resistivity because they do not rely on thermal ionization of Si dopants.« less

Evolution of AlGaN deep level defects as a function of alloying and compositional grading and resultant impact on electrical conductivity

DOE Office of Scientific and Technical Information (OSTI.GOV)

Armstrong, Andrew M.; Allerman, Andrew A.

AlGaN:Si epilayers with uniform Al compositions of 60%, 70%, 80%, and 90% were grown by metal-organic vapor phase epitaxy along with a compositionally graded, unintentionally doped (UID) AlGaN epilayer with the Al composition varying linearly between 80% and 100%. The resistivity of AlGaN:Si with a uniform composition increased significantly for the Al content of 80% and greater, whereas the graded UID-AlGaN film exhibited resistivity equivalent to 60% and 70% AlGaN:Si owing to polarization-induced doping. Deep level defect studies of both types of AlGaN epilayers were performed to determine why the electronic properties of uniform-composition AlGaN:Si degraded with increased Al content,more » while the electronic properties of graded UID-AlGaN did not. The deep level density of uniform-composition AlGaN:Si increased monotonically and significantly with the Al mole fraction. Conversely, graded-UID AlGaN had the lowest deep level density of all the epilayers despite containing the highest Al composition. These findings indicate that Si doping is an impetus for point defect incorporation in AlGaN that becomes stronger with the increasing Al content. However, the increase in deep level density with the Al content in uniform-composition AlGaN:Si was small compared to the increase in resistivity. This implies that the primary cause for increasing resistivity in AlGaN:Si with the increasing Al mole fraction is not compensation by deep levels but rather increasing activation energy for the Si dopant. As a result, the graded UID-AlGaN films maintained low resistivity because they do not rely on thermal ionization of Si dopants.« less

Fabrication and electrical properties of p-CuAlO2/(n-, p-)Si heterojunctions

NASA Astrophysics Data System (ADS)

Suzhen, Wu; Zanhong, Deng; Weiwei, Dong; Jingzhen, Shao; Xiaodong, Fang

2014-04-01

CuAlO2 thin films have been prepared by the chemical solution deposition method on both n-Si and p-Si substrates. X-ray diffraction analysis indicates that the obtained CuAlO2 films have a single delafossite structure. The current transport properties of the resultant p-CuAlO2/n-Si and p-CuAlO2/p-Si heterojunctions are investigated by current-voltage measurements. The p-CuAlO2/n-Si has a rectifying ratio of ~35 within the applied voltages of -3.0 to +3.0 V, while the p-CuAlO2/p-Si shows Schottky diode-like characteristics, dominated in forward bias by the flow of space-charge-limited current.

The microstructure of the surface layer of magnesium laser alloyed with aluminum and silicon

DOE Office of Scientific and Technical Information (OSTI.GOV)

Dziadoń, Andrzej

2016-08-15

The surface layer under analysis was formed as a result of diffusion bonding of a thin AlSi20 plate to a magnesium substrate followed by laser melting. Depending on the process parameters, the laser beam melted the AlSi20 plate only or the AlSi20 plate and a layer of the magnesium surface adjacent to it. Two types of microstructure of the remelted layer were thus analyzed. If the melting zone was limited to the AlSi20 plate, the microstructure of the surface layer was typical of a rapidly solidified hypereutectic Al–Si alloy. Since, however, the liquid AlSi20 reacted with the magnesium substrate, themore » following intermetallic phases formed: Al{sub 3}Mg{sub 2}, Mg{sub 17}Al{sub 12} and Mg{sub 2}Si. The microstructure of the modified surface layer of magnesium was examined using optical, scanning electron and transmission electron microscopy. The analysis of the surface properties of the laser modified magnesium revealed that the thin layer has a microstructure of a rapidly solidified Al–Si alloy offering good protection against corrosion. By contrast, the surface layer containing particles of intermetallic phases was more resistant to abrasion but had lower corrosion resistance than the silumin type layer. - Highlights: •A CO{sub 2} laser was used for surface alloying of Mg with AlSi20. •Before alloying, an AlSi20 plate was diffusion bonded with the Mg substrate. •The process parameters affected the alloyed layer microstructure and properties. •With melting limited to AlSi20, the layer had a structure of rapidly solidified AlSi20. •Mg–Al and Mg–Si phases were present when both the substrate and the plate were melted.« less

High temperature tensile behavior and microstructure of Al-SiC nanocomposite fabricated by mechanical milling and hot extrusion technique

NASA Astrophysics Data System (ADS)

Soltani, Mohammadreza; Atrian, Amir

2018-02-01

This paper investigates the high-temperature tensile behavior of Al-SiC nanocomposite reinforced with 0, 1.5, and 3 vol% SiC nano particles. To fabricate the samples, SiC nano reinforcements and aluminum (Al) powders were milled using an attritor milling and then were cold pressed and hot extruded at 500 °C. Afterward, mechanical and microstructural characteristics were studied in different temperatures. To this end, tensile and compressive tests, micro-hardness test, microscopic examinations, and XRD analysis were performed. The results showed significant improvement of mechanical properties of Al-SiC nanocomposite in room temperature including 40% of ultimate tensile strength (UTS), 36% of ultimate compressive strength (UCS), and 44% of micro-hardness. Moreover, performing tensile tests at elevated temperatures (up to 270 °C) decreased the tensile strength by about 53%, 46%, and 45% for Al-0 vol% SiC, Al-1.5 vol% SiC, and Al-3 vol% SiC, respectively. This temperature rise also enhanced the elongation by about 11% and 133% for non-reinforced Al and Al-3 vol% SiC, respectively.

Microstructure and properties of an Al-Ti-Cu-Si brazing alloy for SiC-metal joining

NASA Astrophysics Data System (ADS)

Dai, Chun-duo; Ma, Rui-na; Wang, Wei; Cao, Xiao-ming; Yu, Yan

2017-05-01

An Al-Ti-Cu-Si solid-liquid dual-phase alloy that exhibits good wettability and appropriate interfacial reaction with SiC at 500-600°C was designed for SiC-metal joining. The microstructure, phases, differential thermal curves, and high-temperature wetting behavior of the alloy were analyzed using scanning electron microscopy, X-ray diffraction analysis, differential scanning calorimetry, and the sessile drop method. The experimental results show that the 76.5Al-8.5Ti-5Cu-10Si alloy is mainly composed of Al-Al2Cu and Al-Si hypoeutectic low-melting-point microstructures (493-586°C) and the high-melting-point intermetallic compound AlTiSi (840°C). The contact angle, determined by high-temperature wetting experiments, is approximately 54°. Furthermore, the wetting interface is smooth and contains no obvious defects. Metallurgical bonding at the interface is attributable to the reaction between Al and Si in the alloy and ceramic, respectively. The formation of the brittle Al4C3 phase at the interface is suppressed by the addition of 10wt% Si to the alloy.

Efficient drug delivery using SiO2-layered double hydroxide nanocomposites.

PubMed

Li, Li; Gu, Zi; Gu, Wenyi; Liu, Jian; Xu, Zhi Ping

2016-05-15

MgAl-layered double hydroxide (MgAl-LDH) nanoparticles have great potentials in drug and siRNA delivery. In this work, we used a nanodot-coating strategy to prepare SiO2 dot-coated layered double hydroxide (SiO2@MgAl-LDH) nanocomposites with good dispersibility and controllable size for drug delivery. The optimal SiO2@MgAl-LDH nanocomposite was obtained by adjusting synthetic parameters including the mass ratio of MgAl-LDH to SiO2, the mixing temperature and time. The optimal SiO2@MgAl-LDH nanocomposite was shown to have SiO2 nanodots (10-15nm in diameter) evenly deposited on the surface of MgAl-LDHs (110nm in diameter) with the plate-like morphology and the average hydrodynamic diameter of 170nm. We further employed SiO2@MgAl-LDH nanocomposite as a nanocarrier to deliver methotrexate (MTX), a chemotherapy drug, to the human osteosarcoma cell (U2OS) and found that MTX delivered by SiO2@MgAl-LDH nanocomposite apparently inhibited the U2OS cell growth. Copyright © 2016 Elsevier Inc. All rights reserved.

On the Potential of MAX phases for Nuclear Applications

NASA Astrophysics Data System (ADS)

Tallman, Darin Joseph

Materials within nuclear reactors experience some of the harshest environments currently known to man, including long term operation in extreme temperatures, corrosive media, and fast neutron fluences with up to 100 displacements per atom, dpa. In order to improve the efficiency and safety of current and future reactors, new materials are required to meet these harsh demands. The M n+1AXn phases, a growing family of ternary nano-layered ceramics, possess a desirable combination of metallic and ceramic properties. They are composed of an early transition metal (M), a group 13--16 element (A), and carbon and/or nitrogen (X). The MAX phases are being proposed for use in such extreme environments because of their unique combination of high fracture toughness values and thermal conductivities, machinability, oxidation resistance, and ion irradiation damage tolerance. Previous ion irradiation studies have shown that Ti3SiC2 and Ti3AlC2 resist irradiation damage, maintaining crystallinity up to 50 dpa. The aim of this work was to explore the effect of neutron irradiation, up to 9 dpa and at temperatures of 100 to 1000 °C, on select MAX phases for the first time. The MAX phases Ti3SiC2, Ti 3AlC2, Ti2AlC, and Ti2AlN were synthesized, and irradiated in test reactors that simulate in-pile conditions of nuclear reactors. X-ray diffraction, XRD, pattern refinements of samples revealed a distortion of the crystal lattice after low temperature irradiation, which was not observed after high temperature irradiations. Additionally, the XRD results indicated that Ti3AlC2 and Ti2AlN dissociated after relatively low neutron doses. This led us to focus on Ti 3SiC2 and Ti2AlC. For the first time, dislocation loops were observed in Ti3SiC 2 and Ti2AlC as a result of neutron irradiation. At 1 x 1023 loops/m3, the loop density in Ti2 AlC after irradiation to 0.1 dpa at 700°C was 1.5 orders of magnitude greater than that observed in Ti3SiC2, at 3 x 1021 loops/m3. The Ti2AlC composition appeared more prone to microcracking that Ti3SiC2. Additionally, exceptionally large denuded zones, up to 1 mum in width after 9 dpa irradiations at 500°C, were observed in Ti3SiC2, indicating that point defects readily diffuse to the grain boundaries. Denuded zones of this width, to our knowledge, have never been observed. In comparison, TiC impurity particles were highly damaged with various dislocation loops and defect clusters after irradiation. It is thus apparent that the A-layer, interleaved between MX blocks in the MAX phase nanolayered structure, readily accommodates and/or annihilates point defects, providing significant irradiation damage tolerance. Comparison of defect densities, post-irradiation microstructure, and electrical resistivity showed Ti3SiC2 to have the highest irradiation tolerance. Diffusion bonding of MAX phases to Zircaloy-4 was studied in the 1100 to 1300°C temperature range. The out diffusion of the A-group element into Zircaloy-4 formed Zr-intermetallic compounds that were roughly an order of magnitude thicker in Ti2AlC than Ti3SiC 2. Helium permeability results suggest that the MAX phases behave similarly to other sintered ceramics. Based on the totality of our results, Ti 3SiC2 remains a promising candidate for high temperature nuclear applications, and warrants future exploration. This work provides the foundation for understanding the response of the MAX phases to neutron irradiation, and can now be used to finely tune ion irradiation studies to accurately simulate reactor conditions.

Study on Microstructure and Mechanical Properties of Hypereutectic Al-18Si Alloy Modified with Al-3B.

PubMed

Gong, Chunjie; Tu, Hao; Wu, Changjun; Wang, Jianhua; Su, Xuping

2018-03-20

An hypereutectic Al-18Si alloy was modified via an Al-3B master alloy. The effect of the added Al-3B and the modification temperature on the microstructure, tensile fracture morphologies, and mechanical properties of the alloy were investigated using an optical microscope, Image-Pro Plus 6.0, a scanning electron microscope, and a universal testing machine. The results show that the size of the primary Si and its fraction decreased at first, and then increased as an additional amount of Al-3B was added. When the added Al-3B reached 0.2 wt %, the fraction of the primary Si in the Al-18Si alloy decreased with an increase in temperature. Compared with the unmodified Al-18Si alloy, the tensile strength and elongation of the alloy modified at 850 °C with 0.2 wt % Al-3B increased by 25% and 81%, respectively. The tensile fracture of the modified Al-18Si alloy exhibited partial ductile fracture characteristics, but there were more areas with ductile characteristics compared with that of the unmodified Al-18Si alloy.

Fabrication of SiC-Particles-Shielded Al Spheres upon Recycling Al/SiC Composites

NASA Astrophysics Data System (ADS)

Madarasz, D.; Budai, I.; Kaptay, G.

2011-06-01

Wettability of liquid A359 alloy on SiC particles under molten salt NaCl-KCl-NaF is found at 180 deg, meaning that SiC particles prefer the molten salt phase against the Al phase or the Al/molten salt interface. Thus, this molten salt can be used for recycling, i.e., to separate the phases in the SiC reinforced Al matrix composites. If the separation process is interrupted, Al droplets (submillimeter solidified powder) can be produced, stabilized/surrounded by a monolayer of shielding SiC particles.

A study of junction effect transistors and their roles in carbon nanotube field emission cathodes in compact pulsed power applications

NASA Astrophysics Data System (ADS)

Shui, Qiong

This thesis is focusing on a study of junction effect transistors (JFETs) in compact pulsed power applications. Pulsed power usually requires switches with high hold-off voltage, high current, low forward voltage drop, and fast switching speed. 4H-SiC, with a bandgap of 3.26 eV (The bandgap of Si is 1.12eV) and other physical and electrical superior properties, has gained much attention in high power, high temperature and high frequency applications. One topic of this thesis is to evaluate if 4H-SiC JFETs have a potential to replace gas phase switches to make pulsed power system compact and portable. Some other pulsed power applications require cathodes of providing stable, uniform, high electron-beam current. So the other topic of this research is to evaluate if Si JFET-controlled carbon nanotube field emitter cold cathode will provide the necessary e-beam source. In the topic of "4H-SiC JFETs", it focuses on the design and simulation of a novel 4H-SiC normally-off VJFET with high breakdown voltage using the 2-D simulator ATLAS. To ensure realistic simulations, we utilized reasonable physical models and the established parameters as the input into these models. The influence of key design parameters were investigated which would extend pulsed power limitations. After optimizing the key design parameters, with a 50-mum drift region, the predicted breakdown voltage for the VJFET is above 8kV at a leakage current of 1x10-5A/cm2 . The specific on-state resistance is 35 mO·cm 2 at VGS = 2.7 V, and the switching speed is several ns. The simulation results suggest that the 4H-SiC VJFET is a potential candidate for improving switching performance in repetitive pulsed power applications. To evaluate the 4H-SiC VJFETs in pulsed power circuits, we extracted some circuit model parameters from the simulated I-V curves. Those parameters are necessary for circuit simulation program such as SPICE. This method could be used as a test bench without fabricating the devices to minimize the unnecessary cost. As an extended research of 4H-SiC devices, Metal-Insulator-SiC (MIS) structures were utilized to evaluate the high dielectric constant materials---TiO 2 and Al2O3, as possible gate dielectrics for SiC devices. TiO2 and Al2O3 were chosen because of their high dielectric constants and bandgap energies as well as the acceptance of Ti and Al in most modern CMOS fabrication facilities. MIS devices were fabricated and both their I-V and C-V characteristics were measured and discussed. Our research showed that Al2O3 deposited by e-beam evaporation could be considered as a promising material among the gate insulators for high power SiC devices. In the topic of "Si JFET-controlled carbon nanotube field emitter cathode arrays", stability, controllability and lifetime are the main issues waiting to be addressed before field emitters find their wide applications. The ideas of connecting Si or metal field emitters with external MOSFETs or built-in active devices were attempted by other researchers, and those devices showed effectiveness in controlling and stabilizing the emission current. We presented the design, simulation, and the fabrication of Si JFETs monolithically integrated with CNTs field emitters. The Si JFET was designed to control and improve the emission of carbon nanotube field emitter arrays. Its electrical characteristics were simulated by the device simulator ATLAS. The fabrication process was developed to be compatible with the last step of growing multiwalled carbon nanotubes at 700°C. Carbon nanotubes field emitters were grown by PECVD (Plasma Enhanced Chemical Vapor Deposition). Preliminary field emission tests were conducted with 50 x 50 emitter arrays, with a resultant emission current of 3 muA (˜40 mA/cm2) at an extraction gate voltage of 50 V and an anode voltage of 300 V. Experimental data shows the linear relationship between ln(I/V2) and l/V consistent with Fowler-Nordheim electron tunneling. Some challenging issues were also discussed.

Nitrided SrTiO3 as charge-trapping layer for nonvolatile memory applications

NASA Astrophysics Data System (ADS)

Huang, X. D.; Lai, P. T.; Liu, L.; Xu, J. P.

2011-06-01

Charge-trapping characteristics of SrTiO3 with and without nitrogen incorporation were investigated based on Al/Al2O3/SrTiO3/SiO2/Si (MONOS) capacitors. A Ti-silicate interlayer at the SrTiO3/SiO2 interface was confirmed by x-ray photoelectron spectroscopy and transmission electron microscopy. Compared with the MONOS capacitor with SrTiO3 as charge-trapping layer (CTL), the one with nitrided SrTiO3 showed a larger memory window (8.4 V at ±10 V sweeping voltage), higher P/E speeds (1.8 V at 1 ms +8 V) and better retention properties (charge loss of 38% after 104 s), due to the nitrided SrTiO3 film exhibiting higher dielectric constant, higher deep-level traps induced by nitrogen incorporation, and suppressed formation of Ti silicate between the CTL and SiO2 by nitrogen passivation.

Li15Al3Si6 (Li14.6Al3.4Si6), a compound displaying a heterographite-like anionic framework.

PubMed

Spina, Laurent; Tillard, Monique; Belin, Claude

2003-02-01

The title compound, lithium aluminium silicide (15/3/6), crystallizes in the hexagonal centrosymmetric space group P6(3)/m. The three-dimensional structure of this ternary compound may be depicted as two interpenetrating lattices, namely a graphite-like Li(3)Al(3)Si(6) layer and a distorted diamond-like lithium lattice. As is commonly found for LiAl alloys, the Li and Al atoms are found to share some crystallographic sites. The diamond-like lattice is built up of Li cations, and the graphite-like anionic layer is composed of Si, Al and Li atoms in which Si and Al are covalently bonded [Si-Al = 2.4672 (4) A].

The Effect of Ti on Microstructural Characteristics and Reaction Mechanism in Bonding of Al-Ceramic Composite

NASA Astrophysics Data System (ADS)

Juan, Li; Kehong, Wang; Deku, Zhang

2016-09-01

The effect of Ti on microstructural characteristics and reaction mechanism in bonding of Al-Ceramic composite was studied. Ti and Al-Ceramic composite were diffusion welded at 550, 600, 700, 800, and 900 °C in a vacuum furnace. The microstructures and compositions of the interface layers were analyzed, and the mechanical properties and fracture morphology of the joints were examined. The results indicated that there was a systematic switch from Ti/Ti7Al5Si12/composite at 600 °C and Ti/TiAl3/Ti7Al5Si12/composite at 700 °C to Ti/Ti7Al5Si12/TiAl3/Ti7Al5Si12/composite at 800 °C and Ti/Ti7Al5Si12/TiAl3/composite at 900 °C. The formation of TiAl3 at 700 and 800 °C depended on Al segregation, which was an uphill diffusion driven by chemical potential. The maximum shear strength was 40.9 MPa, found in the joint welded at 700 °C. Most joints fractured between Ti7Al5Si12 and Al-Ceramic composite. In any case, Ti7Al5Si12 was favorable for Al-Ceramic composite welding, which attached to Al-Ceramic composite, reducing the differences in physiochemical properties between SiC and metal, improving the mechanical properties of the joints and increasing the surface wettability of Al-Ceramic composite.

Microstructure and phase analyses of melt-spun Si-Ni base anode materials for Li-ion battery

NASA Astrophysics Data System (ADS)

Jeon, Sung Min; Song, Jong Jin; Kim, Sun-I.; Kwon, Hye Jin; Sohn, Keun Yong; Park, Won-Wook

2013-01-01

Si-based anode composite materials have been studied to improve the performance and the durability of Li-ion secondary batteries in this study. Si-Ni-Al, Si-Ni-Cu and Si-Ni-Cu-Al base alloys were designed and rapidly solidified at the cooling rate of about 106 °C/sec by optimizing the melt spinning. The ribbons were characterized using FE-SEM equipped with EDS, X-ray diffractometer and HR-TEM. The thin ribbons of Si-Ni-Al alloy consisted of nano-sized Si particles and amorphous matrix, which was regarded as an ideal microstructure for the anode material. At the wheel side of the ribbon, 20-30 nm of Si particles were formed (Zone A); whereas at the air side relatively large Si particles were distributed (Zone B). The Si-Ni-Cu alloy showed coarser Si particles than the Si-Ni-Al alloy, and its matrix consisted of NiSi2, Cu3Si and amorphous structures. Finally, the microstructure of the Si-Ni-Cu-Al alloy strips was composed of coarse Si particles, CuNi, Al4Cu9, NiSi2, and unknown phases, and the size of those Si particles were too large to be used for the anode materials.

Long term stability of nanowire nanoelectronics in physiological environments.

PubMed

Zhou, Wei; Dai, Xiaochuan; Fu, Tian-Ming; Xie, Chong; Liu, Jia; Lieber, Charles M

2014-03-12

Nanowire nanoelectronic devices have been exploited as highly sensitive subcellular resolution detectors for recording extracellular and intracellular signals from cells, as well as from natural and engineered/cyborg tissues, and in this capacity open many opportunities for fundamental biological research and biomedical applications. Here we demonstrate the capability to take full advantage of the attractive capabilities of nanowire nanoelectronic devices for long term physiological studies by passivating the nanowire elements with ultrathin metal oxide shells. Studies of Si and Si/aluminum oxide (Al2O3) core/shell nanowires in physiological solutions at 37 °C demonstrate long-term stability extending for at least 100 days in samples coated with 10 nm thick Al2O3 shells. In addition, investigations of nanowires configured as field-effect transistors (FETs) demonstrate that the Si/Al2O3 core/shell nanowire FETs exhibit good device performance for at least 4 months in physiological model solutions at 37 °C. The generality of this approach was also tested with in studies of Ge/Si and InAs nanowires, where Ge/Si/Al2O3 and InAs/Al2O3 core/shell materials exhibited stability for at least 100 days in physiological model solutions at 37 °C. In addition, investigations of hafnium oxide-Al2O3 nanolaminated shells indicate the potential to extend nanowire stability well beyond 1 year time scale in vivo. These studies demonstrate that straightforward core/shell nanowire nanoelectronic devices can exhibit the long term stability needed for a range of chronic in vivo studies in animals as well as powerful biomedical implants that could improve monitoring and treatment of disease.

Long Term Stability of Nanowire Nanoelectronics in Physiological Environments

PubMed Central

2015-01-01

Nanowire nanoelectronic devices have been exploited as highly sensitive subcellular resolution detectors for recording extracellular and intracellular signals from cells, as well as from natural and engineered/cyborg tissues, and in this capacity open many opportunities for fundamental biological research and biomedical applications. Here we demonstrate the capability to take full advantage of the attractive capabilities of nanowire nanoelectronic devices for long term physiological studies by passivating the nanowire elements with ultrathin metal oxide shells. Studies of Si and Si/aluminum oxide (Al2O3) core/shell nanowires in physiological solutions at 37 °C demonstrate long-term stability extending for at least 100 days in samples coated with 10 nm thick Al2O3 shells. In addition, investigations of nanowires configured as field-effect transistors (FETs) demonstrate that the Si/Al2O3 core/shell nanowire FETs exhibit good device performance for at least 4 months in physiological model solutions at 37 °C. The generality of this approach was also tested with in studies of Ge/Si and InAs nanowires, where Ge/Si/Al2O3 and InAs/Al2O3 core/shell materials exhibited stability for at least 100 days in physiological model solutions at 37 °C. In addition, investigations of hafnium oxide-Al2O3 nanolaminated shells indicate the potential to extend nanowire stability well beyond 1 year time scale in vivo. These studies demonstrate that straightforward core/shell nanowire nanoelectronic devices can exhibit the long term stability needed for a range of chronic in vivo studies in animals as well as powerful biomedical implants that could improve monitoring and treatment of disease. PMID:24479700

Corrosion resistance of a new AL 6013-20 SiC(P) in salt spray chamber

NASA Astrophysics Data System (ADS)

Ahmad, Zaki; Aleem, B. J. Abdul

2000-06-01

Aluminum 6013 alloy (0.82Si, 0.95Mg, and 0.35Mn) is finding increasing usage in new aircraft designs, automotives, and structural applications due to its good stretch forming character in T4 temper (solution heat treated and naturally aged to a substantially stable conditions) compared to alloy 2024 (4.4Cu, 0.6Mn, 1.5Mg, and balance Al) and Al6061 (Si0.51 to 0.71, Fe0.35, Cu0.15, Mn0.85, Mg0.15, 0.25Cr, 0.15Zn, and balanced Al). The newly developed A1 6013 reinforced with 20 vol.% SiC(P) has a higher strength than its unreinforced counterpart. Whereas the corrosion behavior of A1 6013 has been reported in literature, there is no previous data on A1 6013 reinforced with SiC(P). A knowledge of the corrosion behavior of this alloy is crucial to its applications in aerospace, structural, and automotive industry. The first results of corrosion study of this alloy in 3.5 wt.% Na Cl in a salt spray chamber are presented. Three tempers F (as fabricated), O (annealed), and T4 (age hardened and stabilized at room temperature) of the alloy A1 6013-30 SiC(P) were exposed to environmental chamber in accordance with ASTM recommended practice. The corrosion rate of the alloy showed a decrease with increased exposure period and after 800 h of exposure no appreciable change in the rate of corrosion was observed. The lowest rate of corrosion (4.83 mdd) was shown by temper T4 followed by tempers F and O after 1200 h of exposure in the increasing order of corrosion rate. Fluctuations in the corrosion rate with time are related to the kinetics of growth and dissolution of Al(OH)3 film, which was detected by fourier transformation infrared (FTIR) spectroscopy (FTIS). The film was composed of an inner compact layer and outer bulk layer dependent on the refreshment rate from the bulk solution. Micrograph examination by scanning electron microscopy (SEM) showed the presence of pits covered by aluminum hydroxide gel, which isolates the pit from the bulk solution. The acidic conditions of pits also cause intergranular attack. Pitting was observed to be less pronounced in temper T4 compared to F and O tempers, the former also showing the highest resistance to corrosion. The data generated predict promising application potential of this alloy in environment where resistance to corrosion is also a major consideration.

Electron microscopy of AlN-SiC interfaces and solid solutions

DOE Office of Scientific and Technical Information (OSTI.GOV)

Bentley, J.; Tanaka, S.; Davis, R.F.

In a 2H AlN-SiC solid solution grown by MBE on {alpha}(6H)-SiC (3{degrees} from [0001]), the epilayer contained a high density of basal faults related to {approximately}5 nm steps on the growth surface: no compositional inhomogeneity was detected by PEELS. In diffusion couples of polycrystalline, sintered AlN on SiC annealed at 1600 and 1700{degrees}C. 8H sialon [nominally (AlN){sub 2}Al{sub 2}O{sub 3}] formed at the interface of SiC and recrystallized epitactic AlN grains, and Si{sub 3}N{sub 4}-rich {beta}{prime} sialon particles formed in the SiC. No interdiffusion was detected by PEELS in diffusion couples of MBE-grown AlN on SiC annealed at 1700 andmore » 1850{degrees}C. Irregular epilayer thickness explains companion Auger depth profile results.« less

Questing and the application for silicon based ternary compound within ultra-thin layer of SIS intermediate region

NASA Astrophysics Data System (ADS)

Chen, Shumin; Gao, Ming; Wan, Yazhou; Du, Huiwei; Li, Yong; Ma, Zhongquan

2016-12-01

A silicon based ternary compound was supposed to be solid synthesized with In, Si and O elements by magnetron sputtering of indium tin oxide target (ITO) onto crystal silicon substrate at 250 °C. To make clear the configuration of the intermediate region, a potential method to obtain the chemical bonding of Si with other existing elements was exploited by X-ray photoelectron spectroscopy (XPS) instrument combined with other assisted techniques. The phase composition and solid structure of the interfacial region between ITO and Si substrate were investigated by X-ray diffraction (XRD) and high resolution cross sectional transmission electron microscope (HR-TEM). A photovoltaic device with structure of Al/Ag/ITO/SiOx/p-Si/Al was assembled by depositing ITO films onto the p-Si substrate by using magnetron sputtering. The new matter has been assumed to be a buffer layer for semiconductor-insulator-semiconductor (SIS) photovoltaic device and plays critical role for the promotion of optoelectronic conversion performance from the view point of device physics.

Effect of Low-Temperature Thermomechanical Treatment on the Structure and Mechanical, Fatigue and Corrosion Characteristics of Sheets from an Alloy of the Al - Mg - Si - Cu - Zn System

NASA Astrophysics Data System (ADS)

Makhsidov, V. V.; Kolobnev, N. I.; Kochubey, A. Ya.; Fomina, M. A.; Zamyatin, V. M.; Pushin, V. G.

2014-11-01

The effect of deformation on the structure, strength and fatigue properties, stresses on the surface and sensitivity to intercrystalline corrosion of sheets from alloy 1370 of the Al -Mg - Si - Cu - Zn system with one-side cladding is investigated. Application of deformation to sheets of alloy 1370 between the stages of artificial aging lowers the depth of penetration of ICC (≤ 0.10 mm) and raises the fatigue characteristics (by up to a factor of 2) at a high level of mechanical properties.

Investigation of reaction kinetics and interfacial phase formation in Ti3Al + Nb composites

NASA Technical Reports Server (NTRS)

Wawner, F. E.; Gundel, D. B.

1992-01-01

Titanium aluminide metal matrix composites are prominent materials systems being considered for high temperature aerospace applications. One of the major problems with this material is the reactivity between existing reinforcements and the matrix after prolonged thermal exposure. This paper presents results from an investigation of reaction kinetics between Ti-14Al-21Nb (wt pct) and SCS-6 fibers and SiC fibers with surface coatings of TiB2, TiC, TiN, W, and Si. Microstructural evaluation of the reaction layers as well as matrix regions around the fibers is presented.

The Reactive Stabilisation of Aluminum-Zinc-X Foams via the Formation of a Transient Liquid Phase Using the Powder Metallurgy Approach

NASA Astrophysics Data System (ADS)

Lafrance, Maxime

During the past few decades, aluminum foam research has focused on the improvement of properties. These properties include pore structure and process reproducibility. High energy absorption capacity, lightweight and high stiffness to weight ratio are some of the properties that make these foams desirable for a number of diverse applications. The use of a transient liquid phase and melting point depressant was studied in order to improve aluminum foam manufactured through the powder metallurgy process and to create reactive Stabilisation. The transient liquid phase reacts with aluminum and helps encapsulate higher levels of hydrogen, simultaneously reducing the difference between the melting point of the alloy and the gas release temperature of the blowing agent (TiH2). A large difference is known to adversely affect foam properties. The study of pure aluminum foam formation was undertaken to understand the basic foaming mechanisms related to crack formations under in-situ conditions. Elemental zinc powder at various concentrations (Al-10wt%Zn, Al-33wt%Zn and Al-50wt%Zn) was added to produce a transient liquid phase. Subsequently, an Al-12wt%Si pre-alloyed powder was added to the Al-Zn mixture in order to further reduce the melting point of the alloy and to increase the amount of transient liquid phase available (Al-3.59wtSi-9.6%Zn and Al-2.4wt%Si-9.7wt%Zn). The mechanical properties of each system at optimal foaming conditions were assessed and compared. It was determined that pure aluminum foam crack formation could be suppressed at higher heating rates, improving the structure through the nucleation of uniform pores. The Al-10wt%Zn foams generated superior pore properties, post maximum expansion stability and mechanical properties at lower temperatures, compared to pure aluminum. The Al-Si-Zn foams revealed remarkable stability and pore structure at very low temperatures (640 to 660°C). Overall, the Al-10wt%Zn and Al-3.59wt%Si-9.6wt%Zn foams offer superior properties compared to pure aluminum.

Si3 AlP: A New Promising Material for Solar Cell Absorber

NASA Astrophysics Data System (ADS)

Yang, Jihui; Zhai, Yingteng; Liu, Hengrui; Xiang, Hongjun; Gong, Xingao; Wei, Suhuai

2014-03-01

First-principles calculations are performed to study the structural and optoelectronic properties of the newly synthesized nonisovalent and lattice-matched (Si2)0.6(AlP)0.4 alloy [T. Watkins et al., J. Am. Chem. Soc. 2011, 133, 16212.] The most stable structure of Si3AlP is a superlattice along the <111>direction with separated AlP and Si layers, which has a similar optical absorption spectrum to silicon. The ordered C1c1-Si3AlP is found to be the most stable one among all the structures with -AlPSi3- motifs, in agreement with the experimental suggestions. We predict that C1c1-Si3AlP has good optical properties, i.e., it has a larger fundamental band gap and a smaller direct band gap than Si, thus it has much higher absorption in the visible light region, making it a promising candidate for improving the performance of the existing Si-based solar cells.

Characterization of single-crystalline Al films grown on Si(111)

NASA Astrophysics Data System (ADS)

Fortuin, A. W.; Alkemade, P. F. A.; Verbruggen, A. H.; Steinfort, A. J.; Zandbergen, H.; Radelaar, S.

1996-10-01

Single-crystalline Al films have been grown by molecular beam epitaxy on a (7 × 7) reconstructed Si(111) surface at 50°C. The 100 nm thick Al films were extensively characterized by X-ray diffraction, transmission electron diffraction and microscopy, SIMS, and RBS in combination with ion channeling. The orientational relationship found was Al(111) t' | Si(111) and Al[11¯0] t'| Si[11¯0]. The film is single-crystalline over the entire 4″ Si wafer. TED and TEM showed that the lattice mismatch of 25.3% at room temperature is accommodated at the interface by alignment of every three Si atoms to four Al atoms. Annealing of the film at 400°C for 30 min led to a reduction of defects in the film and an increase at the interface. Furthermore, it increased the Si concentration in the Al film slightly. We regard this deposition method as the most appropriate one among the various techniques for epitaxial growth of Al on Si explored so far.

Hydrogenation properties of Li{sub x}Sr{sub 1−x}AlSi studied by quantum-chemical methods (0≤x≤1) and in-situ neutron powder diffraction (x=1)

DOE Office of Scientific and Technical Information (OSTI.GOV)

Kunkel, Nathalie, E-mail: nathalie.kunkel@chimie-paristech.fr; FR 8.1 Universität des Saarlandes, Postach 151150, 66041 Saarbrücken; Reichert, Christian

2015-01-15

In-situ neutron powder diffraction studies of the Half-Heusler phase LiAlSi under high deuterium pressures and first principle calculations of solid solutions of Li{sub x}Sr{sub 1−x}AlSi and their hydrides Li{sub x}Sr{sub 1−x}AlSiH were carried out. In contrast to an earlier study, there is no experimental evidence for hydrogen (deuterium) uptake up to gas pressures of 15 MPa and temperatures of 550 °C. Instead a slow decomposition reaction according to LiAlSi+1/2H{sub 2}=LiH+Al+Si was found by in-situ neutron powder diffraction. Theoretical calculations by DFT methods on hypothetical solid solutions of Li{sub x}Sr{sub 1−x}AlSi show the LiAlSi type to be the energetically most stablemore » structure for 0.7« less

Role of Si on the Diffusional Interactions Between U-Mo and Al-Si Alloys at 823 K (550 °C)

NASA Astrophysics Data System (ADS)

Perez, Emmanuel; Sohn, Yong-Ho; Keiser, Dennis D.

2013-01-01

U-Mo dispersions in Al-alloy matrix and monolithic fuels encased in Al-alloy are under development to fulfill the requirements for research and test reactors to use low-enriched molybdenum stabilized uranium alloy fuels. Significant interaction takes place between the U-Mo fuel and Al during manufacturing and in-reactor irradiation. The interaction products are Al-rich phases with physical and thermal characteristics that adversely affect fuel performance and result in premature failure. Detailed analysis of the interdiffusion and microstructural development of this system was carried through diffusion couples consisting of U-7 wt pct Mo, U-10 wt pct Mo and U-12 wt pct Mo in contact with pure Al, Al-2 wt pct Si, and Al-5 wt pct Si, annealed at 823 K (550 °C) for 1, 5 and 20 hours. Scanning electron microscopy and transmission electron microscopy were employed for the analysis. Diffusion couples consisting of U-Mo in contact with pure Al contained UAl3, UAl4, U6Mo4Al43, and UMo2Al20 phases. Additions of Si to the Al significantly reduced the thickness of the interdiffusion zone. The interdiffusion zones developed Al- and Si-enriched regions, whose locations and size depended on the Si and Mo concentrations in the terminal alloys. In these couples, the (U,Mo)(Al,Si)3 phase was observed throughout the interdiffusion zone, and the U6Mo4Al43 and UMo2Al20 phases were observed only where the Si concentrations were low.

Hot Corrosion Behavior of Stainless Steel with Al-Si/Al-Si-Cr Coating

NASA Astrophysics Data System (ADS)

Fu, Guangyan; Wu, Yongzhao; Liu, Qun; Li, Rongguang; Su, Yong

2017-03-01

The 1Cr18Ni9Ti stainless steel with Al-Si/Al-Si-Cr coatings is prepared by slurry process and vacuum diffusion, and the hot corrosion behavior of the stainless steel with/without the coatings is studied under the condition of Na2SO4 film at 950 °C in air. Results show that the corrosion kinetics of stainless steel, the stainless steel with Al-Si coating and the stainless steel with Al-Si-Cr coating follow parabolic laws in several segments. After 24 h corrosion, the sequence of the mass gain for the three alloys is the stainless steel with Al-Si-Cr coating < the stainless steel with Al-Si coating < the stainless steel without any coating. The corrosion products of the three alloys are layered. Thereinto, the corrosion products of stainless steel without coating are divided into two layers, where the outside layer contains a composite of Fe2O3 and FeO, and the inner layer is Cr2O3. The corrosion products of the stainless steel with Al-Si coating are also divided into two layers, of which the outside layer mainly consists of Cr2O3, and the inner layer is mainly SiO2. The corrosion film of the stainless steel with Al-Si-Cr coating is thin and dense, which combines well with substrate. Thereinto, the outside layer is mainly Cr2O3, and the inside layer is Al2O3. In the matrix of all of the three alloys, there exist small amount of sulfides. Continuous and protective films of Cr2O3, SiO2 and Al2O3 form on the surface of the stainless steel with Al-Si and Al-Si-Cr coatings, which prevent further oxidation or sulfide corrosion of matrix metals, and this is the main reason for the much smaller mass gain of the two alloys than that of the stainless steel without any coatings in the 24 h hot corrosion process.

Thermodynamic modeling of melts in the system Na 2O-NaAlO 2-SiO 2-F 2O -1

NASA Astrophysics Data System (ADS)

Dolejš, David; Baker, Don R.

2005-12-01

Fluorine is a common volatile element in magmatic-hydrothermal systems, but its solution mechanisms and thermodynamic description in highly polymerized silicate melts are poorly known. We have developed a thermodynamic model for fluorosilicate liquids that links experimentally determined phase equilibria and spectroscopic information on melt structure. The model is applicable to crystallization of fluoride minerals, fluoride-silicate immiscibility in natural felsic melts, and metallurgical processes. Configurational properties of fluorosilicate melts are described by mixing on three site levels (sublattices): (1) alkali fluoride, polyhedral aluminofluoride and silicofluoride species and nonbridging terminations of the aluminosilicate network, (2) alkali-aluminate and silicate tetrahedra within the network and (3) bridging oxygen, nonbridging oxygen and terminal fluorine atoms on tetrahedral apices of the network. Abundances of individual chemical species are described by a homogeneous equilibrium representing melt depolymerization: F - (free) + O 0 (bridging) = F 0 (terminal) + O - (nonbridging) which corresponds to a replacement of an oxygen bridging two tetrahedra by a pair of terminations, one with F and the other with an O and a charge-balancing Na. In cryolite-bearing systems two additional interaction mechanisms occur: (1) the self-dissociation of octahedral aluminofluoride complexes: [AlF 6] = [AlF 4] + 2 [F], and (2) the short-range order between (O,F)-corners and (Si,NaAl)-centers of tetrahedra: Si-O-Si + 2 [NaAl]-F = [NaAl]-O-[NaAl] + 2 Si-F. Portrayal of these equilibria in ternary Thompson reaction space allows for the decrease in the number of interaction mechanisms by linearly combining melt depolymerization with tetrahedral short-range order. In this formulation, the nonideal thermodynamic properties are represented by reaction energies of homogeneous equilibria, thus defining directly individual chemical species concentrations and configurational properties. Thermodynamic expressions for the activity-composition relationships are simplified if all entities are expressed using symbolic molecular notation (e.g., SiO 2, SiF 4, [NaAl]O 2, [NaAl]F 4, NaF etc.) with corresponding nonfractional site multiplicities (1, 2 or 4). The model has been applied to three subsystems of the Na 2O-NaAlO 2-SiO 2-F 2O -1 compositional space. Activity-composition relationships in the villiaumite-sodium silicate binaries require clustering of silicate tetrahedra and only negligible interaction between fluoride species and silicate polymer. Phase equilibria in the cryolite-albite system with a large depression of albite liquidus are interpreted via complete substitution of O 0 by O - and F 0 in the silicate framework. With increasing fluorine content, initial Al-F and Si-O short-range order evolves into the partial O-F disorder. The present model provides a useful relationship between experimental equilibria, macroscopic thermodynamics and melt speciation, thus it facilitates comparisons with, and interpretations of, spectroscopic and molecular simulation data.

Mechanical and physical properties of AlSi10Mg processed through selective laser melting

NASA Astrophysics Data System (ADS)

Raus, A. A.; Wahab, M. S.; Ibrahim, M.; Kamarudin, K.; Ahmed, Aqeel; Shamsudin, S.

2017-04-01

In the past few decade, Additive Manufacturing (AM) has become popular and substantial to manufacture direct functional parts in varieties industrial applications even in very challenging like aerospace, medical and manufacturing sectors. Selective Laser Melting (SLM) is one of the most efficient technique in the additive Manufacturing (AM) which able to manufacture metal component directly from Computer Aided Design (CAD) file data. Accuracy, mechanical and physical properties are essentials requirement in order to meet the demand of those engineering components. In this paper, the mechanical properties of SLM manufactured AlSi10Mg samples such as hardness, tensile strength, and impact toughness are investigated and compared to conventionally high pressure die cast A360 alloy. The results exposed that the hardness and the yield strength of AlSi10Mg samples by SLM were increased by 42% and 31% respectively to those of conventionally high pressure die cast A360 alloy even though without comprehensive post processing methods. It is also discovered that AlSi10Mg parts fabricated by SLM achieved the highest density of 99.13% at the best setting parameters from a previous study of 350 watts laser power, 1650 mm/s scanning speed and hatching distance 0.13 mm.

Measurement of mechanical and thermophysical properties of dimensionally stable materials for space applications

NASA Technical Reports Server (NTRS)

Rawal, Suraj P.; Misra, Mohan S.

1992-01-01

Mechanical, thermal, and physical property test data was generated for as-fabricated advanced composite materials at room temperature (RT), -150 and 250 F. The results are documented of mechanical and thermophysical property tests of IM7/PEEK and discontinuous SiC/Al (particulate (p) and whisker (w) reinforced) composites which were tested at three different temperatures to determine the effect of temperature on material properties. The specific material systems tested were IM7/PEEK (0)8, (0, + or - 45, 90)s, (+ or - 30, 04)s, 25 vol. pct. (v/o) SiCp/Al, and 25 v/o SiCw/Al. RT material property results of IM7/PEEK were in good agreement with the predicted values, providing a measure of consolidation integrity attained during fabrication. Results of mechanical property tests indicated that modulus values at each test temperature were identical, whereas the strength (e.g., tensile, compressive, flexural, and shear) values were the same at -150 F, and RT, and gradually decreased as the test temperature was increased to 250 F. Similar trends in the strength values was also observed in discontinuous SiC/Al composites. These results indicate that the effect of temperature was more pronounced on the strength values than modulus values.

Alleviation of Al Toxicity by Si Is Associated with the Formation of Al-Si Complexes in Root Tissues of Sorghum.

PubMed

Kopittke, Peter M; Gianoncelli, Alessandra; Kourousias, George; Green, Kathryn; McKenna, Brigid A

2017-01-01

Silicon is reported to reduce the toxic effects of Al on root elongation but the in planta mechanism by which this occurs remains unclear. Using seedlings of soybean ( Glycine max ) and sorghum ( Sorghum bicolor ), we examined the effect of up to 2 mM Si on root elongation rate (RER) in Al-toxic nutrient solutions. Synchrotron-based low energy X-ray fluorescence (LEXRF) was then used for the in situ examination of the distribution of Al and Si within cross-sections cut from the apical tissues of sorghum roots. The addition of Si potentially increased RER in Al-toxic solutions, with RER being up to ca. 0.3 mm h -1 (14%) higher for soybean and ca. 0.2 mm h -1 (17%) higher for sorghum relative to solutions without added Si. This improvement in RER could not be attributed to a change in Al-chemistry of the bulk nutrient solution, nor was it due to a change in the concentration of Al within the apical (0-10 mm) root tissues. Using LEXRF to examine sorghum, it was demonstrated that in roots exposed to both Al and Si, much of the Al was co-located with Si in the mucigel and outer apoplast. These observations suggest that Si reduces the toxicity of Al in planta through formation of Al-Si complexes in mucigel and outer cellular tissues, thereby decreasing the binding of Al to the cell wall where it is known to inhibit wall loosening as required for cell elongation.

Precursor Routes to Complex Ternary Intermetallics: Single-Crystal and Microcrystalline Preparation of Clathrate-I Na8Al8Si38 from NaSi + NaAlSi.

PubMed

Dong, Yongkwan; Chai, Ping; Beekman, Matt; Zeng, Xiaoyu; Tritt, Terry M; Nolas, George S

2015-06-01

Single crystals of the ternary clathrate-I Na8Al8Si38 were synthesized by kinetically controlled thermal decomposition (KCTD), and microcrystalline Na8Al8Si38 was synthesized by spark plasma sintering (SPS) using a NaSi + NaAlSi mixture as the precursor. Na8AlxSi46-x compositions with x ≤ 8 were also synthesized by SPS from precursor mixtures of different ratios. The crystal structure of Na8Al8Si38 was investigated using both Rietveld and single-crystal refinements. Temperature-dependent transport and UV/vis measurements were employed in the characterization of Na8Al8Si38, with diffuse-reflectance measurement indicating an indirect optical gap of 0.64 eV. Our results indicate that, when more than one precursor is used, both SPS and KCTD are effective methods for the synthesis of multinary inorganic phases that are not easily accessible by traditional solid-state synthesis or crystal growth techniques.

Synthesis of ternary Si clathrates in the A-Al-Si (A = Na and K) system

NASA Astrophysics Data System (ADS)

Imai, Motoharu; Singh, Shiva Kumar; Nishio, Mitsuaki; Yamada, Takahiro; Yamane, Hisanori

2015-07-01

With the aim of producing functional materials based on earth-abundant elements, we examined the synthesis of the ternary type-I clathrates A8AlxSi46-x (A = Na and K). The type-I Si clathrate K7.9(1)Al7.1(1)Si38.9(4), having a lattice parameter of 10.434(1) Å, was successfully synthesized via the direct reaction of K, Al, and Si by optimization of both the synthesis temperature and the molar ratios among the raw ingredients. K8Al7Si39 exhibited metallic conduction: its electrical resistivity increased with increasing temperature. The high pressure synthesis of Na8AlxSi46-x was also examined, using a belt-type apparatus and employing a mixture of NaSi, Al, and Si as the reagents. In this manner, the type-I Si clathrate Na8.7(9)Al0.5(1)Si45(2), having a lattice parameter of 10.211(1) Å, was synthesized at 5.5 GPa and 1570 K.

Metal Organic Chemical Vapor Deposition of Oxide Films for Advanced Applications

DTIC Science & Technology

2000-06-01

coatings , photovoltaics, touch sensitive controls, electromagnetic shielding (as found on microwave ovens and stealth fighters), static dissipaters, and so...depositing high quality films. The methods are physical vapor deposition ( PVD ), spin/mist deposition, (CVD), and alternating layer (AL) CVD. PVD ...PZT & SBT, YBa2Cu3O, CeO, InO, TCOs, Varistors Ta2O5 , ZrO, MnO, HfO, CeO, MnO, MgO SAW/microwave Silicon/: Si, SiGe, SiGeC, �. Opto-electronics

Heusler Alloyed Electrodes Integrated in Magnetic Tunnel-Junctions

NASA Astrophysics Data System (ADS)

Hütten, Andreas; Kämmerer, Sven; Schmalhorst, Jan; Reiss, Günter

As a consequence of the growing theoretically predictions of 100% spin polarized half- and full-Heusler compounds over the past 6 years, Heusler alloys are among the most promising materials class for future magnetoelectronic and spintronic applications. We have integrated Co2MnSi as a representative of the full-Heusler compound family as one magnetic electrode into technological relevant magnetic tunnel junctions. The resulting tunnel magnetoresistance at 20 K was determined to be 95% corresponding to a Co2MnSi spin polarization of 66% in combination with an AlOx barrier thickness of 1.8 nm. For magnetic tunnel junctions prepared with an initially larger Al layer prior to oxidation the tunnel magnetoresistance at 20 K increases to about 108% associated with a Co2MnSi spin polarization of 72% clearly proving that Co2MnSi is already superior to 3d-based magnetic elements or their alloys. The corresponding room temperature values of the tunnel magnetoresistance are 33% and 41%, respectively. Structural and magnetic properties of the Co2MnSi AlOx - barrier interface have been studied with X-ray diffraction, electron and X-ray absorption spectroscopy and X-ray magnetic circular dichroism and it is shown that the ferromagnetic order of Mn and Co spins at this interface is only induced in optimally annealed Co2MnSi layer. The underlying atomic ordering mechanism responsible for achieving about its theoretical magnetic moment could be assigned to the elimination of Co-Si antisite defects whereas the reduction of Co-Mn antisite defects results in large tunnel magnetoresistance. The presence of a step like tunnel barrier which is already created during plasma oxidation while preparing the AlOx tunnel barrier has been identified as the current limitation to achieve larger tunnel magnetoresistance and hence larger spin polarization and is a direct consequence of the oxygen affinity of the Co2MnSi - Heusler elements Mn and Si.

Microstructural characteristics and aging response of Zn-containing Al-Mg-Si-Cu alloy

NASA Astrophysics Data System (ADS)

Cai, Yuan-hua; Wang, Cong; Zhang, Ji-shan

2013-07-01

Al-Mg-Si-Cu alloys with and without Zn addition were fabricated by conventional ingot metallurgy method. The microstructures and properties were investigated using optical microscopy (OM), field emission scanning electron microscopy (FE-SEM), transmission electron microscopy (TEM), tensile test, hardness test, and electrical conductivity measurement. It is found that the as-cast Al-Mg-Si-Cu-Zn alloy is composed of coarse dendritic grains, long needle-like β/δ-AlFeSi white intermetallics, and Chinese script-like α-AlFeSi compounds. During high temperature homogenization treatment, only harmful needle-like β-AlFeSi phase undergoes fragmentation and spheroidizing at its tips, and the destructive needle-like δ-phase does not show any morphological and size changes. Phase transitions from β-AlFeSi to α-AlFeSi and from δ-AlFeSi to β-AlFeSi are also not found. Zn addition improves the aging hardening response during the former aging stage and postpones the peak-aged hardness to a long aging time. In T4 condition, Zn addition does not obviously increase the yield strength and decrease the elongation, but it markedly improves paint-bake hardening response during paint-bake cycle. The addition of 0.5wt% Zn can lead to an increment of 99 MPa in yield strength compared with the value of 69 MPa for the alloy without Zn after paint-bake cycle.

Effects of Mn addition on microstructure and hardness of Al-12.6Si alloy

NASA Astrophysics Data System (ADS)

Biswas, Prosanta; Patra, Surajit; Mondal, Manas Kumar

2018-03-01

In this work, eutectic Al-12.6Si alloy with and without manganese (Mn) have been developed through gravity casting route. The effect of Mn concentration (0.0 wt.%, 1 wt%, 2 wt% and 3 wt%) on microstructural morphology and hardness property of the alloy has been investigated. The eutectic Al-12.6 Si alloy exhibits the presence of combine plate, needle and rod-like eutectic silicon phase with very sharp corners and coarser primary silicon particles within the α-Al phase. In addition of 1wt.% of Mn in the eutectic Al-12.6Si alloy, sharp corners of the primary Si and needle-like eutectic Si are became blunt and particles size is reduced. Further, increase in Mn concentration (2.0 wt.%) in the Al-12.6Si alloy, irregular plate shape Al6(Mn,Fe) intermetallics are formed inside the α-Al phase, but the primary and eutectic phase morphology is similar to the eutectic Al-12.6Si alloy. The volume fraction of Al6(Mn,Fe) increases and Al6(Mn,Fe) particles appear as like chain structure in the alloy with 3 wt.% Mn. An increase in Mn concentration in the Al-12.6Si alloys result in the increase in bulk hardness of the alloy as an effects of microstructure modification as well as the presence of harder Al6(Mn,Fe) phase in the developed alloy.

Solid-state {sup 27}Al and {sup 29}Si NMR characterization of hydrates formed in calcium aluminate-silica fume mixtures

DOE Office of Scientific and Technical Information (OSTI.GOV)

Pena, P.; Rivas Mercury, J.M.; Aza, A.H. de

2008-08-15

Partially deuterated Ca{sub 3}Al{sub 2}(SiO{sub 4}){sub y}(OH){sub 12-4y}-Al(OH){sub 3} mixtures, prepared by hydration of Ca{sub 3}Al{sub 2}O{sub 6} (C{sub 3}A), Ca{sub 12}Al{sub 14}O{sub 33} (C{sub 12}A{sub 7}) and CaAl{sub 2}O{sub 4} (CA) phases in the presence of silica fume, have been characterized by {sup 29}Si and {sup 27}Al magic-angle spinning-nuclear magnetic resonance (MAS-NMR) spectroscopies. NMR spectroscopy was used to characterize anhydrous and fully hydrated samples. In hydrated compounds, Ca{sub 3}Al{sub 2}(OH){sub 12} and Al(OH){sub 3} phases were detected. From the quantitative analysis of {sup 27}Al NMR signals, the Al(OH){sub 3}/Ca{sub 3}Al{sub 2}(OH){sub 12} ratio was deduced. The incorporation of Simore » into the katoite structure, Ca{sub 3}Al{sub 2}(SiO{sub 4}){sub 3-x}(OH){sub 4x}, was followed by {sup 27}Al and {sup 29}Si NMR spectroscopies. Si/OH ratios were determined from the quantitative analysis of {sup 27}Al MAS-NMR components associated with Al(OH){sub 6} and Al(OSi)(OH){sub 5} environments. The {sup 29}Si NMR spectroscopy was also used to quantify the unreacted silica and amorphous calcium aluminosilicate hydrates formed, C-S-H and C-A-S-H for short. From {sup 29}Si NMR spectra, the amount of Si incorporated into different phases was estimated. Si and Al concentrations, deduced by NMR, transmission electron microscopy, energy dispersive spectrometry, and Rietveld analysis of both X-ray and neutron data, indicate that only a part of available Si is incorporated in katoite structures. - Graphical abstract: Transmission electron micrograph of CaAl{sub 2}O{sub 4}-microsilica mixture hydrated at 90 deg. C for 31 days showing a cubic Ca{sub 3}Al{sub 2.0{+-}}{sub 0.2}(SiO{sub 4}){sub 0.9{+-}}{sub 0.2}(OH){sub 1.8} crystal surrounded by unreacted amorphous silica spheres.« less

Low Temperature Rhombohedral Single Crystal SiGe Epitaxy on c-plane Sapphire

NASA Technical Reports Server (NTRS)

Duzik, Adam J.; Choi, Sang H.

2016-01-01

Current best practice in epitaxial growth of rhombohedral SiGe onto (0001) sapphire (Al2O3) substrate surfaces requires extreme conditions to grow a single crystal SiGe film. Previous models described the sapphire surface reconstruction as the overriding factor in rhombohedral epitaxy, requiring a high temperature Al-terminated surface for high quality films. Temperatures in the 850-1100 C range were thought to be necessary to get SiGe to form coherent atomic matching between the (111) SiGe plane and the (0001) sapphire surface. Such fabrication conditions are difficult and uneconomical, hindering widespread application. This work proposes an alternative model that considers the bulk sapphire structure and determines how the SiGe film nucleates and grows. Accounting for thermal expansion effects, calculations using this new model show that both pure Ge and SiGe can form single crystal films in the 450-550 C temperature range. Experimental results confirm these predictions, where x-ray diffraction and atomic force microscopy show the films fabricated at low temperature rival the high temperature films in crystallographic and surface quality. Finally, an explanation is provided for why films of comparable high quality can be produced in either temperature range.

Ge-on-Si PIN-photodetectors with Al nanoantennas: The effect of nanoantenna size on light scattering into waveguide modes

NASA Astrophysics Data System (ADS)

Fischer, Inga A.; Augel, Lion; Kropp, Timo; Jitpakdeebodin, Songchai; Franz, Nuno; Oliveira, Filipe; Rolseth, Erlend; Maß, Tobias; Taubner, Thomas; Schulze, Jörg

2016-02-01

Metallic nanoantennas can be used to enhance the efficiency of optical device operation by re-distributing electromagnetic energy. Here, we investigate the effect of a random distribution of disc-shaped Al nanoantennas of different diameters deposited on Ge-on-Si PIN-photodetectors on the wavelength-dependent responsivity. We compare our experimental results to simulations and find that the largest responsivity enhancement is obtained for wavelengths that correspond to energies at or below the bandgap energy of Ge. We argue that this is the result of antenna-mediated scattering of light into waveguide modes within the Ge-on-Si PIN-photodetectors, which is effectively influenced by nanoantenna size, and we discuss a possible application of the concept for integrated biosensing.

Electron microscopy characterization of AlGaN/GaN heterostructures grown on Si (111) substrates

NASA Astrophysics Data System (ADS)

Gkanatsiou, A.; Lioutas, Ch. B.; Frangis, N.; Polychroniadis, E. K.; Prystawko, P.; Leszczynski, M.

2017-03-01

AlGaN/GaN buffer heterostructures were grown on "on axis" and 4 deg off Si (111) substrates by MOVPE. The electron microscopy study reveals the very good epitaxial growth of the layers. Almost c-plane orientated nucleation grains are achieved after full AlN layer growth. Step-graded AlGaN layers were introduced, in order to prevent the stress relaxation and to work as a dislocation filter. Thus, a crack-free smooth surface of the final GaN epitaxial layer is achieved in both cases, making the buffer structure ideal for the forthcoming growth of the heterostructure (used for HEMT device applications). Finally, the growth of the AlGaN/GaN heterostructure on top presents characteristic and periodic undulations (V-pits) on the surface, due to strain relaxation reasons. The AlN interlayer grown in between the heterostructure demonstrates an almost homogeneous thickness, probably reinforcing the 2DEG electrical characteristics.

Al and Mg Alloys for Aerospace Applications Using Rapid Solidification and Powder Metallurgy Processing.

DTIC Science & Technology

1986-11-14

5wt % Si was completely different from that of the alloy without silicon. The (X phase formed around the primary Mg2 Si crystals, and an irregular...content, and primary crystals in a binary Mg- 5wt % Si alloy did not exhibit this behavior. The surface of the rapidly solidified melt pools was rough and...Microhardness* of the laser treated alloys . Alloy As-cast Laser treated Mg- 5wt %Li 40.8 55.7 o, Mg- 5wt %Li- 5wt % Si 51.1 74.1 Mg-8wt%Li 42.8 71.2

Effect of Different Silicon Sources on Yield and Silicon Uptake of Rice Grown under Varying Phosphorus Rates

PubMed Central

Agostinho, Flavia B.; Tubana, Brenda S.; Martins, Murilo S.; Datnoff, Lawrence E.

2017-01-01

A series of pot experiments were conducted to: (1) evaluate the effects of different Si sources (soil- and foliar-applied) on grain yield and Si accumulation of rice supplied with varying P rates, and (2) evaluate Si absorption of rice using foliar- and soil-applied Si fertilizers. Three P rates, (0, 112, and 224 kg ha−1) combined with five Si treatments (wollastonite and slag applied at 4.5 ton ha−1 and one foliar Si solution applied at 20, 40 and 80 mg Si L−1) and a check were arranged in a randomized complete block design with four replications. The presence of P and Si in the soil created a synergistic effect on soil Al, Mn, and As (P < 0.01), but not on rice growth and P uptake. Wollastonite and slag application were most effective in raising rice Si content than foliar applied Si (P < 0.001). While there was an improvement in biomass (42%) and tiller production (25%) for rice receiving foliar Si, no supporting evidence was obtained in these experiments to verify leaf surface Si absorption. The application of Si-rich materials to soil still remains the most effective method for enhancing Si uptake by plants. PMID:28850079

Effect of Different Silicon Sources on Yield and Silicon Uptake of Rice Grown under Varying Phosphorus Rates.

PubMed

Agostinho, Flavia B; Tubana, Brenda S; Martins, Murilo S; Datnoff, Lawrence E

2017-08-29

A series of pot experiments were conducted to: (1) evaluate the effects of different Si sources (soil- and foliar-applied) on grain yield and Si accumulation of rice supplied with varying P rates, and (2) evaluate Si absorption of rice using foliar- and soil-applied Si fertilizers. Three P rates, (0, 112, and 224 kg ha -1 ) combined with five Si treatments (wollastonite and slag applied at 4.5 ton ha -1 and one foliar Si solution applied at 20, 40 and 80 mg Si L -1 ) and a check were arranged in a randomized complete block design with four replications. The presence of P and Si in the soil created a synergistic effect on soil Al, Mn, and As ( P < 0.01), but not on rice growth and P uptake. Wollastonite and slag application were most effective in raising rice Si content than foliar applied Si ( P < 0.001). While there was an improvement in biomass (42%) and tiller production (25%) for rice receiving foliar Si, no supporting evidence was obtained in these experiments to verify leaf surface Si absorption. The application of Si-rich materials to soil still remains the most effective method for enhancing Si uptake by plants.

Species-dependent silicon isotope fractionation in unialgal cultures of marine diatoms

NASA Astrophysics Data System (ADS)

Sutton, J. N.; Varela, D. E.; Brzezinski, M. A.; Beucher, C.

2011-12-01

Variations in the natural abundance of stable isotopes of silicon (expressed as δ30Si in %) are a key tool for studying the marine silicon (Si) cycle in modern and ancient oceans. In particular, this tool can be used to track relative differences in silicic acid drawdown in surface waters by siliceous microplankton. Diatoms are siliceous phytoplankton that dominate the cycling of Si in the oceans. They represent a major source of primary production and are important in the transfer of Si, nitrogen, phosphorus, and atmospheric carbon to the deep sea. Previous investigations of Si isotope fractionation in diatom cultures have ruled out the influence of temperature (12-22°C) and shown that Si fractionation was invariant in different species of temperate diatoms (De La Rocha et al. 1997). However, the application of this proxy for marine paleo-silicon reconstructions has typically only been used in polar regions, such as the Southern Ocean, where high primary production rates give rise to diatom-rich sediments. Here, we present results on the fractionation of Si isotopes by four species of polar diatoms grown in semi-continuous cultures (Chaetoceros brevis, Fragilariopsis kerguelensis, Porosira glacialis, and Thalassiosira antarctica). To compare with previous studies (De La Rocha et al, 1997), we also tested Si isotope fractionation by two species of temperate diatoms (Thalassiosira pseudonana and Thalassiosira weissflogii). The temperate species yielded Si isotope fractionation (Δ30Si) values of -0.81 % (±0.12, SD, n=11) for T. pseudonana and -1.03% (±0.09, SD, n=3) for T. weissflogii, that are identical to the previously reported fractionation of -1.1 % (±0.4, SD, n=6) (De La Rocha et al. 1997). Similarly, our data for polar species F. kerguelensis, P. glacialis and T. antarctica suggest a fractionation of -0.7 to -1.1 %. Interestingly, our preliminary results from Chaetoceros brevis cultures show a Si isotope fractionation value of about -2.61 % (±0.05, SD, n=4). A distinguishing feature of the Chaetoceros genus is the production of long silica appendages called setae after mitotic cell division is complete (Rogerson et al. 1986). These results significantly contribute to our current understanding of the modern and ancient oceanic Si cycles, and will be useful in the interpretation of marine paleo-Si sedimentary records. De La Rocha, C. L., et al. (1997), Fractionation of silicon isotopes by marine diatoms during biogenic silica formation, Geochimica Et Cosmochimica Acta, 61(23), 5051-5056. Rogerson, A., et al. (1986), Growth rates and ultrastructure of siliceous setae of Chaetoceros gracilis (Bacillariophyceae), Journal Of Phycology, 22, 56-62.

Hydrogen passivation of poly-Si/SiO x contacts for Si solar cells using Al 2O 3 studied with deuterium

DOE Office of Scientific and Technical Information (OSTI.GOV)

Schnabel, Manuel; van de Loo, Bas W. H.; Nemeth, William

Here, the interplay between hydrogenation and passivation of poly-Si/SiO x contacts to n-type Si wafers is studied using atomic layer deposited Al 2O 3 and anneals in forming gas and nitrogen. The poly-Si/SiO x stacks are prepared by thermal oxidation followed by thermal crystallization of a-Si:H films deposited by plasma-enhanced chemical vapor deposition. Implied open-circuit voltages as high as 710 mV are achieved for p-type poly-Si/SiO x contacts to n-type Si after hydrogenation. Correlating minority carrier lifetime data and secondary ion mass spectrometry profiles reveals that the main benefit of Al 2O 3 is derived from its role as amore » hydrogen source for chemically passivating defects at SiO x; Al 2O 3 layers are found to hydrogenate poly-Si/SiO x much better than a forming gas anneal. By labelling Al 2O 3 and the subsequent anneal with different hydrogen isotopes, it is found that Al 2O 3 exchanges most of its hydrogen with the ambient upon annealing at 400 °C for 1 h even though there is no significant net change in its total hydrogen content.« less

Hydrogen passivation of poly-Si/SiOx contacts for Si solar cells using Al2O3 studied with deuterium

NASA Astrophysics Data System (ADS)

Schnabel, Manuel; van de Loo, Bas W. H.; Nemeth, William; Macco, Bart; Stradins, Paul; Kessels, W. M. M.; Young, David L.

2018-05-01

The interplay between hydrogenation and passivation of poly-Si/SiOx contacts to n-type Si wafers is studied using atomic layer deposited Al2O3 and anneals in forming gas and nitrogen. The poly-Si/SiOx stacks are prepared by thermal oxidation followed by thermal crystallization of a-Si:H films deposited by plasma-enhanced chemical vapor deposition. Implied open-circuit voltages as high as 710 mV are achieved for p-type poly-Si/SiOx contacts to n-type Si after hydrogenation. Correlating minority carrier lifetime data and secondary ion mass spectrometry profiles reveals that the main benefit of Al2O3 is derived from its role as a hydrogen source for chemically passivating defects at SiOx; Al2O3 layers are found to hydrogenate poly-Si/SiOx much better than a forming gas anneal. By labelling Al2O3 and the subsequent anneal with different hydrogen isotopes, it is found that Al2O3 exchanges most of its hydrogen with the ambient upon annealing at 400 °C for 1 h even though there is no significant net change in its total hydrogen content.

Hydrogen passivation of poly-Si/SiO x contacts for Si solar cells using Al 2O 3 studied with deuterium

DOE PAGES

Schnabel, Manuel; van de Loo, Bas W. H.; Nemeth, William; ...

2018-05-14

Here, the interplay between hydrogenation and passivation of poly-Si/SiO x contacts to n-type Si wafers is studied using atomic layer deposited Al 2O 3 and anneals in forming gas and nitrogen. The poly-Si/SiO x stacks are prepared by thermal oxidation followed by thermal crystallization of a-Si:H films deposited by plasma-enhanced chemical vapor deposition. Implied open-circuit voltages as high as 710 mV are achieved for p-type poly-Si/SiO x contacts to n-type Si after hydrogenation. Correlating minority carrier lifetime data and secondary ion mass spectrometry profiles reveals that the main benefit of Al 2O 3 is derived from its role as amore » hydrogen source for chemically passivating defects at SiO x; Al 2O 3 layers are found to hydrogenate poly-Si/SiO x much better than a forming gas anneal. By labelling Al 2O 3 and the subsequent anneal with different hydrogen isotopes, it is found that Al 2O 3 exchanges most of its hydrogen with the ambient upon annealing at 400 °C for 1 h even though there is no significant net change in its total hydrogen content.« less

New GaN based HEMT with Si3N4 or un-doped region in the barrier for high power applications

NASA Astrophysics Data System (ADS)

Razavi, S. M.; Tahmasb Pour, S.; Najari, P.

2018-06-01

New AlGaN/GaN high electron mobility transistors (HEMTs) that their barrier layers under the gate are divided into two regions horizontally are presented in this work. Upper region is Si3N4 (SI-HEMT) or un-doped AlGaN (UN-HEMT) and lower region is AlGaN with heavier doping compared to barrier layer. Upper region in SI-HEMT and UN-HEMT reduces peak electric field in the channel and then improves breakdown voltage considerably. Lower region increases electron density in the two dimensional electron gas (2-DEG) and enhances drain current significantly. For instance, saturated drain current in SI-HEMT is about 100% larger than that in the conventional one. Moreover, the maximum breakdown voltage in the proposed structures is 65 V. This value is about 30% larger than that in the conventional transistor (50 V). Also, suggested structure reduces short channel effect such as DIBL. The maximum gm is obtained in UN-HEMT and conventional devices. Proposed structures improve breakdown voltage and saturated drain current and then enhance maximum output power density. Maximum output power density in the new structures is about 150% higher than that in the conventional.

Fiber-reinforced plastic composites. Possibilities and limitations of applications as machine-construction materials

NASA Technical Reports Server (NTRS)

Ophey, Lothar

1988-01-01

The use of fiber-reinforced composite structural materials in engineering applications is discussed in a survey of currently available technology and future prospects. The ongoing rapid growth in the use of these materials is described, and the criteria to be applied in selecting base materials, lamination schemes, fasteners, and processing methods are examined in detail and illustrated with graphs, diagrams, flow charts, and drawings. A description of a sample application (comparing the properties of steel, CFRP, SiC-reinforced Al, CFRP/steel, and CFRP/Al automobile piston rods) is included.

A novel yellow-emitting SrAlSi{sub 4}N{sub 7}:Ce{sup 3+} phosphor for solid state lighting: Synthesis, electronic structure and photoluminescence properties

DOE Office of Scientific and Technical Information (OSTI.GOV)

Ruan, Jian; Laboratory of Glasses and Nanostructured Functional Materials, 122 Luoshi Road, Wuhan, Hubei 430070; Xie, Rong-Jun, E-mail: Xie.Rong-Jun@nims.go.jp

2013-12-15

Ce{sup 3+}-doped and Ce{sup 3+}/Li{sup +}-codoped SrAlSi{sub 4}N{sub 7} phosphors were synthesized by gas pressure sintering of powder mixtures of Sr{sub 3}N{sub 2}, AlN, α-Si{sub 3}N{sub 4}, CeN and Li{sub 3}N. The phase purity, electronic crystal structure, photoluminescence properties of SrAlSi{sub 4}N{sub 7}:Ce{sup 3+}(Ce{sup 3+}/Li{sup +}) were investigated in this work. The band structure calculated by the DMol{sup 3} code shows that SrAlSi{sub 4}N{sub 7} has a direct band gap of 3.87 eV. The single crystal analysis of Ce{sup 3+}-doped SrAlSi{sub 4}N{sub 7} indicates a disordered Si/Al distribution and nitrogen vacnacy defects. SrAlSi{sub 4}N{sub 7} was identified as a majormore » phase of the fired powders, and Sr{sub 5}Al{sub 5}Si{sub 21}N{sub 35}O{sub 2} and AlN as minor phases. Both Ce{sup 3+} and Ce{sup 3+}/Li{sup +} doped SrAlSi{sub 4}N{sub 7} phosphors can be efficiently excited by near-UV or blue light and show a broadband yellow emission peaking around 565 nm. A highest external quantum efficiency of 38.3% under the 450 nm excitation was observed for the Ce{sup 3+}/Li{sup +}-doped SrAlSi{sub 4}N{sub 7} (5 mol%). A white light LED lamp with color temperature of 6300 K and color rendering index of Ra=78 was achieved by combining Sr{sub 0.97}Al{sub 1.03}Si{sub 3.997}N/94/maccounttest14=t0005{sub 1}8193 {sub 7}:Ce{sup 3+}{sub 0.03} with a commercial blue InGaN chip. It indicates that SrAlSi{sub 4}N{sub 7}:Ce{sup 3+} is a promising yellow emitting down-conversion phosphor for white LEDs. - Graphical abstract: One-phosphor converted white light-emitting diode (LED) was fabricated by combining a blue LED chip and a yellow-emitting SrAlSi4N7:Ce{sup 3+} phosphor (see inset), which has the color rendering index of 78 and color temperature of 6300 K. - Highlights: • We reported a new yellow nitride phosphor suitable for solid state lighting. • We solved the crystal structure and evidenced a disordered Si/Al distribution. • We fabricated a high color rendering white LEDs by using a single SrAlSi4N7:Ce.« less

Interfacial characterization of Al-Al thermocompression bonds

DOE Office of Scientific and Technical Information (OSTI.GOV)

Malik, N., E-mail: nishantmalik1987@gmail.com; SINTEF ICT, Department of Microsystems and Nanotechnology, P.O. Box 124 Blindern, N-0314 Oslo; Carvalho, P. A.

2016-05-28

Interfaces formed by Al-Al thermocompression bonding were studied by the transmission electron microscopy. Si wafer pairs having patterned bonding frames were bonded using Al films deposited on Si or SiO{sub 2} as intermediate bonding media. A bond force of 36 or 60 kN at bonding temperatures ranging from 400–550 °C was applied for a duration of 60 min. Differences in the bonded interfaces of 200 μm wide sealing frames were investigated. It was observed that the interface had voids for bonding with 36 kN at 400 °C for Al deposited both on Si and on SiO{sub 2}. However, the dicing yield was 33% for Al onmore » Si and 98% for Al on SiO{sub 2}, attesting for the higher quality of the latter bonds. Both a bond force of 60 kN applied at 400 °C and a bond force of 36 kN applied at 550 °C resulted in completely bonded frames with dicing yields of, respectively, 100% and 96%. A high density of long dislocations in the Al grains was observed for the 60 kN case, while the higher temperature resulted in grain boundary rotation away from the original Al-Al interface towards more stable configurations. Possible bonding mechanisms and reasons for the large difference in bonding quality of the Al films deposited on Si or SiO{sub 2} are discussed.« less

Al+Si Interface Optical Properties Obtained in the Si Solar Cell Configuration

DOE PAGES

Subedi, Indra; Silverman, Timothy J.; Deceglie, Michael G.; ...

2017-10-18

Al is a commonly used material for rear side metallization in commercial silicon (Si) wafer solar cells. In this study, through-the-silicon spectroscopic ellipsometry is used in a test sample to measure Al+Si interface optical properties like those in Si wafer solar cells. Two different spectroscopic ellipsometers are used for measurement of Al+Si interface optical properties over the 1128-2500 nm wavelength range. For validation, the measured interface optical properties are used in a ray tracing simulation over the 300-2500 nm wavelength range for an encapsulated Si solar cell having random pyramidal texture. The ray tracing model matches well with the measuredmore » total reflectance at normal incidence of a commercially available Si module. The Al+Si optical properties presented here enable quantitative assessment of major irradiance/current flux losses arising from reflection and parasitic absorption in encapsulated Si solar cells.« less

Effect of the nand p-type Si(100) substrates with a SiC buffer layer on the growth mechanism and structure of epitaxial layers of semipolar AlN and GaN

NASA Astrophysics Data System (ADS)

Bessolov, V. N.; Grashchenko, A. S.; Konenkova, E. V.; Myasoedov, A. V.; Osipov, A. V.; Red'kov, A. V.; Rodin, S. N.; Rubets, V. P.; Kukushkin, S. A.

2015-10-01

A new effect of the n-and p-type doping of the Si(100) substrate with a SiC film on the growth mechanism and structure of AlN and GaN epitaxial layers has been revealed. It has been experimentally shown that the mechanism of AlN and GaN layer growth on the surface of a SiC layer synthesized by substituting atoms on n- and p-Si substrates is fundamentally different. It has been found that semipolar AlN and GaN layers on the SiC/Si(100) surface grow in the epitaxial and polycrystalline structures on p-Si and n-Si substrates, respectively. A new method for synthesizing epitaxial semipolar AlN and GaN layers by chloride-hydride epitaxy on silicon substrates has been proposed.

Al+Si Interface Optical Properties Obtained in the Si Solar Cell Configuration

DOE Office of Scientific and Technical Information (OSTI.GOV)

Subedi, Indra; Silverman, Timothy J.; Deceglie, Michael G.

Al is a commonly used material for rear side metallization in commercial silicon (Si) wafer solar cells. In this study, through-the-silicon spectroscopic ellipsometry is used in a test sample to measure Al+Si interface optical properties like those in Si wafer solar cells. Two different spectroscopic ellipsometers are used for measurement of Al+Si interface optical properties over the 1128-2500 nm wavelength range. For validation, the measured interface optical properties are used in a ray tracing simulation over the 300-2500 nm wavelength range for an encapsulated Si solar cell having random pyramidal texture. The ray tracing model matches well with the measuredmore » total reflectance at normal incidence of a commercially available Si module. The Al+Si optical properties presented here enable quantitative assessment of major irradiance/current flux losses arising from reflection and parasitic absorption in encapsulated Si solar cells.« less

Newly synthesized MgAl2Ge2: A first-principles comparison with its silicide and carbide counterparts

NASA Astrophysics Data System (ADS)

Tanveer Karim, A. M. M.; Hadi, M. A.; Alam, M. A.; Parvin, F.; Naqib, S. H.; Islam, A. K. M. A.

2018-06-01

Using plane-wave pseudopotential density functional theory (DFT), the first-principle calculations are performed to investigate the structural aspects, mechanical behaviors and electronic features of the newly synthesized CaAl2Si2-prototype intermetallic compound, MgAl2Ge2 for the first time and the results are compared with those calculated for its silicide and carbide counterparts MgAl2Si2 and MgAl2C2. The calculated lattice constants agree fairly well with their corresponding experimental values. The estimated elastic tensors satisfy the mechanical stability conditions for MgAl2Ge2 along with MgAl2Si2 and MgAl2C2. The level of elastic anisotropy increases following the sequence of X-elements Ge → Si → C. MgAl2Ge2 and MgAl2Si2 are expected to be ductile and damage tolerant, while MgAl2C2 is a brittle one. MgAl2Ge2 and MgAl2Si2 should exhibit better thermal shock resistance and low thermal conductivity and accordingly these can be used as thermal barrier coating (TBC) materials. The Debye temperature of MgAl2Ge2 is lowest among three intermetallic compounds. MgAl2Ge2 and MgAl2Si2 should exhibit metallic conductivity; while the dual characters of weak-metals and semiconductors are expected for MgAl2C2. The values of theoretical Vickers hardness for MgAl2Ge2, MgAl2Si2, and MgAl2C2 are 3.3, 2.7, and 7.7 GPa, respectively, indicating that these three intermetallics are soft and easily machinable.

Low Cost Al-Si Casting Alloy As In-Situ Composite for High Temperature Applications

NASA Technical Reports Server (NTRS)

Lee, Jonathan A.

2000-01-01

A new aluminum-silicon (Al-Si) alloy has been successfully developed at NASA- Marshall Space Flight Center (MSFC) that has significant improvement in tensile and fatigue strength at elevated temperatures (500 F-700 F). The alloy offers a number of benefits such as light weight, high hardness, low thermal expansion and high surface wear resistance. In hypereutectic form, this alloy is considered as an in-situ Al-Si composite with tensile strength of about 90% higher than the auto industry 390 alloy at 600 F. This composite is very economically produced by using either conventional permanent steel molds or die casting. The projected material cost is less than $0.90 per pound, and automotive components such as pistons can be cast for high production rate using conventional casting techniques with a low and fully accounted cost. Key Words: Metal matrix composites, In-situ composite, aluminum-silicon alloy, hypereutectic alloy, permanent mold casting, die casting.

Corrosion behaviour and biocompatibility of a novel Ni-free intermetallic coating growth on austenitic steel by hot dipping in an Al-12.6%Si alloy.

PubMed

Arenas, M A; Frutos, E; Saldaña, L; Conde, A; Labajos-Broncano, L; González-Martín, M L; González-Carrasco, J L; Vilaboa, N

2011-04-01

Commercial 316 LVM austenitic stainless steel samples have been coated by immersion in a bath of molten Al-12.6%Si alloy for 120 s. The coating consists of the Al(12)(Fe,Cr)(3)Si(2) intermetallic. In vitro corrosion behaviour has been evaluated in the Ringer's solution by means of potentiodynamic curves and electrochemical impedance spectroscopy. The results reveal that the coated specimens exhibit lower susceptibility to localised corrosion with respect to the substrate. XPS analysis suggests that the ennoblement of the pitting potential is due to the formation of a chromium oxyhydroxide containing passive layer. The intermetallic coating shows a good biocompatibility, as demonstrated by culturing human mesenchymal stem cells isolated from bone marrow which attached, grew and differentiated to the osteoblastic lineage to a similar extent on coated and bare steels. In summary, this study proposes a method that generates Ni-free coatings of the stainless steel with useful properties for biomedical applications.

Activity coefficients of NiO and CoO in CaO-Al2O3-SiO2 slag and their application to the recycling of Ni-Co-Fe-based end-of-life superalloys via remelting

NASA Astrophysics Data System (ADS)

Lu, Xin; Miki, Takahiro; Nagasaka, Tetsuya

2017-01-01

To design optimal pyrometallurgical processes for nickel and cobalt recycling, and more particularly for the end-of-life process of Ni-Co-Fe-based end-of-life (EoL) superalloys, knowledge of their activity coefficients in slags is essential. In this study, the activity coefficients of NiO and CoO in CaO-Al2O3-SiO2 slag, a candidate slag used for the EoL superalloy remelting process, were measured using gas/slag/metal equilibrium experiments. These activity coefficients were then used to consider the recycling efficiency of nickel and cobalt by remelting EoL superalloys using CaO-Al2O3-SiO2 slag. The activity coefficients of NiO and CoO in CaO-Al2O3-SiO2 slag both show a positive deviation from Raoult's law, with values that vary from 1 to 5 depending on the change in basicity. The activity coefficients of NiO and CoO peak in the slag with a composition near B = (%CaO)/(%SiO2) = 1, where B is the basicity. We observed that controlling the slag composition at approximately B = 1 effectively reduces the cobalt and nickel oxidation losses and promotes the oxidation removal of iron during the remelting process of EoL superalloys.

Nondestructive depth profile of the chemical state of ultrathin Al2O3/Si interface

NASA Astrophysics Data System (ADS)

Lee, Jong Cheol; Oh, S.-J.

2004-05-01

We investigated a depth profile of the chemical states of an Al2O3/Si interface using nondestructive photon energy-dependent high-resolution x-ray photoelectron spectroscopy (HRXPS). The Si 2p binding energy, attributed to the oxide interfacial layer (OIL), was found to shift from 102.1 eV to 102.9 eV as the OIL region closer to Al2O3 layer was sampled, while the Al 2p binding energy remains the same. This fact strongly suggests that the chemical state of the interfacial layer is not Al silicate as previously believed. We instead propose from the HRXPS of Al 2p and Si 2p depth-profile studies that the chemical states of the Al2O3/Si interface mainly consist of SiO2 and Si2O3.

Role of Al in Zn bath on the formation of the inhibition layer during hot-dip galvanizing for a 1.2Si-1.5Mn transformation-induced plasticity steel

NASA Astrophysics Data System (ADS)

Wang, Kuang-Kuo; Hsu, Chiung-Wen; Chang, Liuwen; Gan, Dershin; Yang, Kuo-Cheng

2013-11-01

This study investigated the interaction between the Al in the Zn bath and the surface oxides formed by selective oxidation on a 1.2Si-1.5Mn TRIP steel during hot-dip galvanizing. XPS and TEM were employed for characterization. The results indicated that the amorphous xMnO·SiO2 oxide could react with Al to form a Si-Mn-Al-containing oxide. The crystalline MnSiO3 and Mn2SiO4 oxides could be largely reduced by Al to form holes in the oxide film. Consequently, the steel covered by a layer of mixed xMnO·SiO2 and MnSiO3 could form a continuous Fe2Al5 inhibition layer and showed the highest galvanizability among the three samples examined.

Effect of Heat Treatment on Commercial AlSi12Cu1(Fe) and AlSi12(b) Aluminum Alloy Die Castings

NASA Astrophysics Data System (ADS)

Battaglia, E.; Bonollo, F.; Ferro, P.; Fabrizi, A.

2018-03-01

High-pressure die castings (HPDCs) cannot normally be heat-treated at a high temperature because of the presence of inner air/gas- or shrinkage-porosity that may lead to the formation of undesired surface blisters. In this paper, an unconventional heat treatment is proposed. Two secondary Al-Si alloys, AlSi12(b) and AlSi12Cu1(Fe), were stabilization heat-treated at 624 K (350 °C) with soaking times ranging from 1 to 8 hours. Enhancement of both static and dynamic mechanical properties was found to be related to the fragmentation of interconnected eutectic Si particles and the smoothing of coarser crystals. Increased ductility after heat treatment was correlated with a decrease in hardness and Si particle roundness. The formation of Si precipitates within the α-Al matrix was also observed.

Analysis of Semiconductor Structures by Nuclear and Electrical Techniques.

DTIC Science & Technology

temperatures well below the Si-Al eutectic (577C), fine grained polycrystalline Si in contact with Al films recrystallizes in the Al matrix. The... recrystallization can be deferred or suppressed by placing a buffer layer of V or Ti between the Al film and poly Si. (2) When annealing Pt films deposited on Si

Device Performance and Reliability Improvements of AlGaBN/GaN/Si MOSFET

DTIC Science & Technology

2016-02-04

Metal insulator semiconductor AlGaN /GaN high electron mobility transistors (MISHEMTs) are promising for power device applications due to a lower leakage...current than the conventional Schottky AlGaN/GaN HEMTs.1–3 Among a large number of insulator materials, an Al2O3 dielectric layer, deposited by...atomic layer deposition (ALD), is often employed as the gate insulator because of a large band gap (and the resultant high conduction band offset on

Determination of silicon and aluminum in silicon carbide nanocrystals by high-resolution continuum source graphite furnace atomic absorption spectrometry.

PubMed

Dravecz, Gabriella; Bencs, László; Beke, Dávid; Gali, Adam

2016-01-15

The determination of Al contaminant and the main component Si in silicon carbide (SiC) nanocrystals with the size-distribution of 1-8nm dispersed in an aqueous solution was developed using high-resolution continuum source graphite furnace atomic absorption spectrometry (HR-CS-GFAAS). The vaporization/atomization processes were investigated in a transversally heated graphite atomizer by evaporating solution samples of Al and Si preserved in various media (HCl, HNO3). For Si, the best results were obtained by applying a mixture of 5µg Pd plus 5µg Mg, whereas for Al, 10µg Mg (each as nitrate solution) was dispensed with the samples, but the results obtained without modifier were found to be better. This way a maximum pyrolysis temperature of 1200°C for Si and 1300°C for Al could be used, and the optimum (compromise) atomization temperature was 2400°C for both analytes. The Si and Al contents of different sized SiC nanocrystals, dispersed in aqueous solutions, were determined against aqueous (external) calibration standards. The correlation coefficients (R values) of the calibrations were found to be 0.9963 for Si and 0.9991 for Al. The upper limit of the linear calibration range was 2mg/l Si and 0.25mg/l Al. The limit of detection was 3µg/l for Si and 0.5µg/l for Al. The characteristic mass (m0) was calculated to be 389pg Si and 6.4pg Al. The Si and Al content in the solution samples were found to be in the range of 1.0-1.7mg/l and 0.1-0.25mg/l, respectively. Copyright © 2015 Elsevier B.V. All rights reserved.

Characterization of an Additive Manufactured TiAl Alloy-Steel Joint Produced by Electron Beam Welding.

PubMed

Basile, Gloria; Baudana, Giorgio; Marchese, Giulio; Lorusso, Massimo; Lombardi, Mariangela; Ugues, Daniele; Fino, Paolo; Biamino, Sara

2018-01-17

In this work, the characterization of the assembly of a steel shaft into a γ-TiAl part for turbocharger application, obtained using Electron Beam Welding (EBW) technology with a Ni-based filler, was carried out. The Ti-48Al-2Nb-0.7Cr-0.3Si (at %) alloy part was produced by Electron Beam Melting (EBM). This additive manufacturing technology allows the production of a lightweight part with complex shapes. The replacement of Nickel-based superalloys with TiAl alloys in turbocharger automotive applications will lead to an improvement of the engine performance and a substantial reduction in fuel consumption and emission. The welding process allows a promising joint to be obtained, not affecting the TiAl microstructure. Nevertheless, it causes the formation of diffusive layers between the Ni-based filler and both steel and TiAl, with the latter side being characterized by a very complex microstructure, which was fully characterized in this paper by means of Scanning Electron Microscopy, Energy Dispersive X-ray Spectroscopy, and nanoindentation. The diffusive interface has a thickness of about 6 µm, and it is composed of several layers. Specifically, from the TiAl alloy side, we find a layer of Ti₃Al followed by Al₃NiTi₂ and AlNi₂Ti. Subsequently Ni becomes more predominant, with a first layer characterized by abundant carbide/boride precipitation, and a second layer characterized by Si-enrichment. Then, the chemical composition of the Ni-based filler is gradually reached.

Effects of in situ synthesized mullite whisker on mechanical properties of Al2O3-SiC composite by microwave sintering

NASA Astrophysics Data System (ADS)

Dang, Xudan; Wei, Meng; Fan, Bingbing; Guan, Keke; Zhang, Rui; Long, Weimin; Zhang, Hongsong

2017-06-01

In situ synthesis of mullite whisker was introduced to Al2O3-SiC composite by microwave sintering. The effects of sintering parameters (sintering temperature, holding time and SiC particle size) on thermal shock resistance of Al2O3-SiC composite were also studied in this paper. Original SiC particles coated with SiO2 by a sol-gel method were reacted with Al2O3 particles, resulting in the in situ growth of mullite. The phase composition was identified by x-ray diffraction (XRD). The bridging of mullite whisker between Al2O3 and SiC particles was observed by scanning electron microscopy (SEM) analysis. The thermal shock resistance of samples was investigated through the combination of water quenching and three-point bending methods. The results show that the thermal shock resistance of Al2O3-SiC composite with mullite whisker reinforced remarkably, indicating better mechanical properties than the Al2O3-SiC composite without mullite whisker. Finally, the optimum process parameters (the sintering temperature of 1500 °C, the holding time of 30 min, and the SiC particle size of 5 µm) for toughening Al2O3-SiC composite by in situ synthesized mullite whisker were obtained.

Complete Al-SI Order in Scapolite Me[subscript 37.5], Ideally Ca[subscript 3]Na[subscript 5][Al[subscript 8]Si[subscript 16]O[subscript 48

DOE Office of Scientific and Technical Information (OSTI.GOV)

Antao, Sytle M.; Hassan, Ishmael; West Indies)

2011-09-06

The structure of an intermediate scapolite (Me{sub 36.6}) from Lake Clear, Ontario, was obtained using synchrotron high-resolution powder X-ray diffraction (HRPXRD) data and Rietveld structure refinement in space group P4{sub 2}/n. The chemical formula obtained by electron microprobe is Na{sub 2.19}Ca{sub 1.35}K{sub 0.16}[Al{sub 3.95}Si{sub 8.05}O{sub 24}]Cl{sub 0.55}(CO{sub 3}){sub 0.41}(SO{sub 4}){sub 0.04}, equivalent to Me{sub 36.6}. The unit-cell parameters are a 12.07899(1), c 7.583467(9) {angstrom}, and V 1106.443(2) {angstrom}{sup 3}. The average distances are = 1.617(1) {angstrom}, = 1.744(1) {angstrom}, and = 1.601(1) {angstrom}. Therefore, the T1 and T3 sites contain only Si atoms, and the T2 sitemore » contains only Al atoms, so the Al and Si atoms are completely ordered. Complete Al-Si order was predicted for Me{sub 37.5}, ideally Ca{sub 3}Na{sub 5}[Al{sub 8}Si{sub 16}O{sub 48}]Cl(CO{sub 3}), and is confirmed in this study. Antiphase domain boundaries (APBs) in scapolite cannot arise from Al-Si order because the average distances indicate complete Al-Si order in Me{sub 36.6}. If APBs were to arise from Al-Si order, switching of the T sites across the APBs will occur, and complete Al-Si order cannot be observed. Therefore, Al-Si order, which is present to various extents across the scapolite series, can be ruled out as the cause for the APBs. Order involving Cl and CO{sub 3} is the cause for the APBs in scapolite.« less

Probing silicon and aluminium chemical environments in silicate and aluminosilicate glasses by solid state NMR spectroscopy and accurate first-principles calculations

NASA Astrophysics Data System (ADS)

Gambuzzi, Elisa; Pedone, Alfonso; Menziani, Maria Cristina; Angeli, Frédéric; Caurant, Daniel; Charpentier, Thibault

2014-01-01

Silicon and aluminium chemical environments in silicate and aluminosilicate glasses with compositions 60SiO2·20Na2O·20CaO (CSN), 60SiO2·20Al2O3·20CaO (CAS), 78SiO2·11Al2O3·11Na2O (NAS) and 60SiO2·10Al2O3·10Na2O·20CaO (CASN) have been investigated by 27Al and 29Si solid state magic angle spinning (MAS) and multiple quantum MAS (MQMAS) nuclear magnetic resonance (NMR) experiments. To interpret the NMR data, first-principles calculations using density functional theory were performed on structural models of these glasses. These models were generated by Shell-model molecular dynamics (MD) simulations. The theoretical NMR parameters and spectra were computed using the gauge including projected augmented wave (GIPAW) method and spin-effective Hamiltonians, respectively. This synergetic computational-experimental approach offers a clear structural characterization of these glasses, particularly in terms of network polymerization, chemical disorder (i.e. Si and Al distribution in second coordination sphere) and modifier cation distributions. The relationships between the local structural environments and the 29Si and 27Al NMR parameters are highlighted, and show that: (i) the isotropic chemical shift of both 29Si and 27Al increases of about +5 ppm for each Al added in the second sphere and (ii) both the 27Al and 29Si isotropic chemical shifts linearly decrease with the reduction of the average Si/Al-O-T bond angle. Conversely, 27Al and 29Si NMR parameters are much less sensitive to the connectivity with triple bridging oxygen atoms, precluding their indirect detection from 27Al and 29Si NMR.

A Reaction Between High Mn-High Al Steel and CaO-SiO2-Type Molten Mold Flux: Part I. Composition Evolution in Molten Mold Flux

NASA Astrophysics Data System (ADS)

Kim, Min-Su; Lee, Su-Wan; Cho, Jung-Wook; Park, Min-Seok; Lee, Hae-Geon; Kang, Youn-Bae

2013-04-01

In order to elucidate the reaction mechanism between high Mn-high Al steel such as twin-induced plasticity steel and molten mold flux composed mainly of CaO-SiO2 during continuous casting process, a series of laboratory-scale experiments were carried out in the present study. Molten steel and molten flux were brought to react in a refractory crucible in a temperature range between 1713 K to 1823 K (1440 °C to 1550 °C) and composition evolution in the steel and the flux was analyzed using inductively coupled plasma atomic emission spectroscopy, X-ray fluorescence, and electron probe microanalysis. The amount of SiO2 in the flux was significantly reduced by Al in the steel; thus, Al2O3 was accumulated in the flux as a result of a chemical reaction, 4[Al] + 3(SiO2) = 3[Si] + 2(Al2O3). In order to find a major factor which governs the reaction, a number of factors ((pct CaO/pct SiO2), (pct Al2O3), [pct Al], [pct Si], and temperature) were varied in the experiments. It was found that the above chemical reaction was mostly governed by [pct Al] in the molten steel. Temperature had a mild effect on the reaction. On the other hand, (pct CaO/pct SiO2), (pct Al2O3), and [pct Si] did not show any noticeable effect on the reaction. Apart from the above reaction, the following reactions are also thought to happen simultaneously: 2[Mn] + (SiO2) = [Si] + 2(MnO) and 2[Fe] + (SiO2) = [Si] + 2(FeO). These oxide components were subsequently reduced by Al in the molten steel. Na2O in the molten flux was gradually decreased and the decrease was accelerated by increasing [pct Al] and temperature. Possible reactions affecting the Al2O3 accumulation are summarized.

FIRST-PRINCIPLES CALCULATIONS OF INTRINSIC DEFECTS AND Mg TRANSMUTANTS IN 3C-SiC

DOE Office of Scientific and Technical Information (OSTI.GOV)

Hu, Shenyang Y.; Setyawan, Wahyu; Van Ginhoven, Renee M.

2013-09-25

Silicon carbide (SiC) possesses many desirable attributes for applications in high-temperature and neutron radiation environments. These attributes include excellent dimensional and thermodynamic stability, low activation, high strength, and high thermal conductivity. Therefore, SiC based materials draw broad attention as structural materials for the first wall (FW) and blanket in fusion power plants. Under the severe high-energy neutron environment of D-T fusion systems, SiC suffers significant transmutation resulting in both gaseous and metallic transmutants. Recent calculations by Sawan, et al. [2] predict that at a fast neutron dose of ~100 dpa, there will be about 0.5 at% Mg generated in SiCmore » through nuclear transmutation. Other transmutation products, including 0.15 at% Al, 0.2 at% Be and 2.2 at% He, also emerge. Formation and migration energies of point defects in 3C-SiC have been widely investigated using density functional theory (DFT). However, the properties of defects associated with transmutants are currently not well understood. Fundamental understanding of where the transmutation products go and how they affect microstructure evolution of SiC composites will help to predict property evolution and performance of SiC-based materials in fusion reactors.« less

Micro-nano filler metal foil on vacuum brazing of SiCp/Al composites

NASA Astrophysics Data System (ADS)

Wang, Peng; Gao, Zeng; Niu, Jitai

2016-06-01

Using micro-nano (Al-5.25Si-26.7Cu)- xTi (wt%, x = 1.0, 1.5, 2.0, 2.5 and 3.0) foils as filler metal, the research obtained high-performance joints of aluminum matrix composites with high SiC particle content (60 vol%, SiCp/Al-MMCs). The effect of brazing process and Ti content on joint properties was investigated, respectively. The experimental results indicate that void free dense interface between SiC particle and metallic brazed seam with C-Al-Si-Ti product was readily obtained, and the joint shear strength enhanced with increasing brazing temperature from 560 to 580 °C or prolonging soaking time from 10 to 90 min. Sound joints with maximum shear strength of 112.5 MPa was achieved at 580 °C for soaking time of 90 min with (Al-5.25Si-26.7Cu)-2Ti filler, where Ti(AlSi)3 intermetallic is in situ strengthening phase dispersed in the joint and fracture occured in the filler metal layer. In this research, the beneficial effect of Ti addition into filler metal on improving wettability between SiC particle and metallic brazed seam was demonstrated, and capable welding parameters were broadened for SiCp/Al-MMCs with high SiC particle content.

Entomotoxicity Assay of Silica, Zinc Oxide, Titanium Dioxide, Aluminium Oxide Nanoparticles on Lipaphis pseudobrassicae

NASA Astrophysics Data System (ADS)

Debnath, Nitai; Das, Sumistha; Brahmachary, R. L.; Chandra, Ramesh; Sudan, Sandeep; Goswami, Arunava

2010-10-01

High volume uses of conventional pesticides end up contaminating ground water and soil with highly toxic pesticide residues. Nano-pesticides and nano-encapsulated pesticides are expected to reduce the volume of application and slow down the fast release kinetics. Nature inspired Diatomaceous Earth (DE) were used to design and fabricate a variety of 15-50 nm size range hydrophilic, hydrophobic and lipophilic SiO2, ZnO, TiO2 (anatase and rutile) and Al2O3 (α and γ) nanoparticles (Nanocides). Mustard aphid (Lipaphis pseudobrassicae) causes devastations on oil producing mustard crops every year in Asia. Due to several distinct adaptations present in insects, tools of Genetics, Plant breeding, Biochemistry and Transgenic technology have not been so far effective. Nano Al2O3 and amorphous nano SiO2 were found to be highly effective and nano TiO2 was moderately effective against L. pseudobrassicae. But nano Al2O3 has deleterious effects on plant growth, whereas non crystalline nano SiO2 has no such adverse effect on plants. Here we present the first report showing that nanocides, especially nano SiO2 can be effectively used to control insect pests.

Intrinsic defect processes and elastic properties of Ti3AC2 (A = Al, Si, Ga, Ge, In, Sn) MAX phases

NASA Astrophysics Data System (ADS)

Christopoulos, S.-R. G.; Filippatos, P. P.; Hadi, M. A.; Kelaidis, N.; Fitzpatrick, M. E.; Chroneos, A.

2018-01-01

Mn+1AXn phases (M = early transition metal; A = group 13-16 element and X = C or N) have a combination of advantageous metallic and ceramic properties, and are being considered for structural applications particularly where high thermal conductivity and operating temperature are the primary drivers: for example in nuclear fuel cladding. Here, we employ density functional theory calculations to investigate the intrinsic defect processes and mechanical behaviour of a range of Ti3AC2 phases (A = Al, Si, Ga, Ge, In, Sn). Based on the intrinsic defect reaction, it is calculated that Ti3SnC2 is the more radiation-tolerant 312 MAX phase considered herein. In this material, the C Frenkel reaction is the lowest energy intrinsic defect mechanism with 5.50 eV. When considering the elastic properties of the aforementioned MAX phases, Ti3SiC2 is the hardest and Ti3SnC2 is the softest. All the MAX phases considered here are non-central force solids and brittle in nature. Ti3SiC2 is elastically more anisotropic and Ti3AlC2 is nearly isotropic.

The Effects of Hydrogen on the Potential-Energy Surface of Amorphous Silicon

NASA Astrophysics Data System (ADS)

Joly, Jean-Francois; Mousseau, Normand

2012-02-01

Hydrogenated amorphous silicon (a-Si:H) is an important semiconducting material used in many applications from solar cells to transistors. In 2010, Houssem et al. [1], using the open-ended saddle-point search method, ART nouveau, studied the characteristics of the potential energy landscape of a-Si as a function of relaxation. Here, we extend this study and follow the impact of hydrogen doping on the same a-Si models as a function of doping level. Hydrogen atoms are first attached to dangling bonds, then are positioned to relieve strained bonds of fivefold coordinated silicon atoms. Once these sites are saturated, further doping is achieved with a Monte-Carlo bond switching method that preserves coordination and reduces stress [2]. Bonded interactions are described with a modified Stillinger-Weber potential and non-bonded Si-H and H-H interactions with an adapted Slater-Buckingham potential. Large series of ART nouveau searches are initiated on each model, resulting in an extended catalogue of events that characterize the evolution of potential energy surface as a function of H-doping. [4pt] [1] Houssem et al., Phys Rev. Lett., 105, 045503 (2010)[0pt] [2] Mousseau et al., Phys Rev. B, 41, 3702 (1990)

Environmental durability of ceramics and ceramic composites

NASA Technical Reports Server (NTRS)

Fox, Dennis S.

1992-01-01

An account is given of the current understanding of the environmental durability of both monolithic ceramics and ceramic-matrix composites, with a view to the prospective development of methods for the characterization, prediction, and improvement of ceramics' environmental durability. Attention is given to the environmental degradation behaviors of SiC, Si3N4, Al2O3, and glass-ceramic matrix compositions. The focus of corrosion prevention in Si-based ceramics such as SiC and Si3N4 is on the high and low sulfur fuel combustion-product effects encountered in heat engine applications of these ceramics; sintering additives and raw material impurities are noted to play a decisive role in ceramics' high temperature environmental response.

Laser dispersing of ceramic powders into Al-alloys

NASA Astrophysics Data System (ADS)

Jendrzejewski, Rafał; Van Acker, Karel; Vanhoyweghen, Dirk

2007-02-01

The general objective of the work was formation of highly wear resistant metal matrix composite (MMC) surface layers on aluminium based Al 6061 alloy by means of laser dispersing. The surface of the substrate is locally melted by the high power diode laser beam and simultaneously powder particles are injected into molten material. The optimal process parameter window for the laser dispersing of SiC in Al 6061 has been found. The measured values of the wear rates of the sample with dispersed SiC particles are about seven times lower than that of the reference Al-substrates. Results show that laser dispersing is highly promising technology to improve the surface, mainly wear properties of light metals. However the possibilities of industrial application are still limited due to considerable laser beam power and preheating temperature applied as well low productivity because of low scanning speed, and therefore further investigations are required.

Toward an experimentally determined {sup 26}Al{sup m}(p,{gamma}){sup 27}Si reaction rate in ONe novae

DOE Office of Scientific and Technical Information (OSTI.GOV)

Deibel, C. M.; Physics Division, Argonne National Laboratory, Argonne, Illinois 60439; Joint Institute for Nuclear Astrophysics, Michigan State University, East Lansing, Michigan 48824

2009-09-15

Strong evidence of the nucleosynthesis of Galactic {sup 26}Al has been found through measurements involving excesses in {sup 26}Mg from the decay of {sup 26}Al in meteoritic inclusions and the 1.809-MeV {gamma}-ray line detected by satellites such as CGRO and INTEGRAL. Several sites for the production of {sup 26}Al have been suggested, including ONe novae. Destruction of {sup 26}Al in ONe novae is possible via the reactions {sup 26}Al{sup g}(p,{gamma}){sup 27}Si and {sup 26}Al{sup m}(p,{gamma}){sup 27}Si. In the present work, resonance parameters for the {sup 26}Al{sup m}(p,{gamma}){sup 27}Si reaction have been determined via studies of the {sup 27}Al({sup 3}He,t){sup 27}Si*(p){supmore » 26}Al{sup m} and {sup 28}Si({sup 3}He,{alpha}){sup 27}Si*(p){sup 26}Al{sup m} reactions. Several new {sup 26}Al{sup m}+p resonances have been discovered within 1 MeV above the proton threshold of 7.691 MeV. Excitation energies and proton-branching ratios for those and previously known states are reported.« less

Al-Si-Cu/TiN multilayer interconnection and Al-Ge reflow sputtering technologies for quarter-micron devices

NASA Astrophysics Data System (ADS)

Kikkawa, Takamaro; Kikuta, Kuniko

1993-05-01

Issues of interconnection technologies for quarter-micron devices are the reliability of metal lines with quarter-micron feature sizes and the formation of contact-hole-plugs with high aspect ratios. This paper describes a TiN/Al-Si-Cu/TiN/Al-Si-Cu/TiN/Ti multilayer conductor structure as a quarter-micron interconnection technology and aluminum-germanium (Al-Ge) reflow sputtering as a contact-hole filling technology. The TiN/Al-Si-Cu/TiN/Al-Si-Cu/TiN/Ti multilayer conductor structure could suppress stress-induced voiding and improve the electromigration mean-time to failure. These improvements are attributed to the fact that the grain boundaries for the Al-Si-Cu film and the interfaces between the Al-Si-Cu and the TiN films are strengthened by the rigid intermetallic compound, TiAl3. The Al-Ge alloy reflow sputtering is a candidate for contact- and via-hole filling technologies in terms of reducing fabrication costs. The Al-Ge reflow sputtering achieved low temperature contact hole filling at 300 degree(s)C. Contact holes with a diameter of 0.25 micrometers and aspect ratio of 4 could be filled. This is attributed to the low eutectic temperature for Al-Ge (424 degree(s)C) and the effect of thin polysilicon underlayer on the enhancement of Al-Ge reflow.

Processing, microstructure and mechanics of functionally graded Al A359/SiC(p) composite

NASA Astrophysics Data System (ADS)

Rodriguez-Castro, Ramon

2000-11-01

Metal matrix composites (MMCs) have great promise for high temperature, high strength, wear resistant applications. However, their brittleness has limited their use in load bearing applications. Functionally graded MMCs with a reinforcement concentration higher on the surface than in the interior offer new opportunities, as these materials will have high surface hardness as well as high resistance to crack growth towards the interior. In this dissertation the processing and mechanical properties of a functionally graded MMC are investigated. Rectangular blocks (100 mmx60 mmx50 mm) of functionally graded SiC particulate reinforced aluminum A359 matrix composite were prepared by centrifugal casting techniques. The reinforcement volume fraction profiles varied as the centrifugal force was applied, owing to the different densities of Al and SiC. The casting at 1300 rpm (angular velocity) had a well-mixed, refined microstructure with the maximum SiC volume fraction of 44% near the outer surface of the blocks. This surface exhibited an elevated hardness. The effect of SiC particulate reinforcement on strengthening of A359 Al alloy was experimentally studied by tensile testing specimens prepared from the cast blocks. There was a continuous increase in tensile and yield strength with increasing SiC volume fractions in the range of 0.20 to 0.30. On the contrary, there was a reduction in tensile and yield strength for SiC concentrations in the range of 0.30 to 0.40. The elasticity modulus increased with increasing SiC volume fractions in the whole reinforcement range (0.20--0.40). Fractographic analysis by SEM revealed a ductile failure process of void growth in the matrix, but the amount of the void growth was less when the SiC concentration was higher. SEM also revealed SiC reinforcement fracture and decohesion, with the particle fracture increasing with the particle concentration. Appropriate flat specimens with a continuously graded microstructure for fracture mechanics testing were machined from the cast blocks. No published work has reported specimens of similar characteristics (size of the specimens and continuous reinforcement gradation). Fracture mechanics of the composite specimens with the crack parallel to the gradation in elastic properties was studied to investigate the effect of the nonhomogeneous microstructure on fracture toughness. Fatigue pre-cracking was used and a limited amount of fatigue crack propagation data was gathered. Low values of DeltaKth and increased crack growth resistance in the Paris region were observed for the functionally graded composite compared to a homogeneous 20 vol% composite. R-curve (KR) behavior of fracture was investigated in the functionally graded composite. At elevated SiC concentrations (low values of crack length), limited dissipation of energy by restrained plastic deformation of the matrix at the crack tip produced low fracture toughness values. On the contrary, at longer crack lengths SiC content decreased and there was more absorption of energy, resulting in higher fracture toughness values. In addition, the crack growth resistance behavior of the FGM composite was compared to the corresponding behavior of an Al A359/SiCp 20 vol% homogeneous composite. The latter exhibited a declining KR-curve behavior whereas the FGM composite displayed an increasing KR-curve behavior. Consequently, this increasing crack growth resistance behavior displayed by the functionally graded Al A359/SiCp composite shows that tailored changes in the microstructure could circumvent the low toughness inherent in MMCs.

Preparation, characterization and catalyst application of ternary interpenetrating networks of poly 4-methyl vinyl pyridinium hydroxide-SiO{sub 2}-Al{sub 2}O{sub 3}

DOE Office of Scientific and Technical Information (OSTI.GOV)

Kalbasi, Roozbeh Javad, E-mail: rkalbasi@iaush.ac.ir; Kolahdoozan, Majid, E-mail: kolahdoozan@iaush.ac.ir; Vanani, Sedigheh Mozafari

2011-08-15

In this work, Al{sub 2}O{sub 3} was mixed with SiO{sub 2} and poly 4-vinylpyridine by the sol-gel method in order to make a composite which is used as a heterogeneous basic catalyst for Knoevenagel condensation reaction. The physical and chemical properties of the composite catalyst were investigated by XRD, FT-IR, TG, BET and SEM techniques. The catalytic performance of each material was determined for the Knoevenagel condensation reaction between carbonyl compound and malononitrile. The reactions were performed in solvent-free conditions and the product was obtained in high yield and purity after a simple work-up. The effects of the amount ofmore » catalyst, amount of monomer for the synthesis of composite and recyclability of the heterogeneous composite were investigated. The composite catalyst used for this synthetically useful transformation showed considerable level of reusability besides very good activity. - Graphical abstract: In this paper, we report the synthesis of poly 4-methyl vinyl pyridinium hydroxide-SiO{sub 2}-Al{sub 2}O{sub 3}. The novelty of this procedure is at easy preparation together with using inexpensive materials. Highlights: > P4MVPH-SiO{sub 2}-Al{sub 2}O{sub 3} composite was prepared as a novel polymer-inorganic hybrid. > The composite was prepared without using any bridged organosilanes compound. > SEM photograph showed that the composite is completely uniform. > P4MVPH-SiO{sub 2}-Al{sub 2}O{sub 3} could behave as a recyclable catalyst for Knoevenagel reaction.« less

Ultrafine-Grained Plates of Al-Mg-Si Alloy Obtained by Incremental Equal Channel Angular Pressing: Microstructure and Mechanical Properties

NASA Astrophysics Data System (ADS)

Lipinska, Marta; Chrominski, Witold; Olejnik, Lech; Golinski, Jacek; Rosochowski, Andrzej; Lewandowska, Malgorzata

2017-10-01

In this study, an Al-Mg-Si alloy was processed using via incremental equal channel angular pressing (I-ECAP) in order to obtain homogenous, ultrafine-grained plates with low anisotropy of the mechanical properties. This was the first attempt to process an Al-Mg-Si alloy using this technique. Samples in the form of 3 mm-thick square plates were subjected to I-ECAP with the 90 deg rotation around the axis normal to the surface of the plate between passes. Samples were investigated first in their initial state, then after a single pass of I-ECAP, and finally after four such passes. Analyses of the microstructure and mechanical properties demonstrated that the I-ECAP method can be successfully applied in Al-Mg-Si alloys. The average grain size decreased from 15 to 19 µm in the initial state to below 1 µm after four I-ECAP passes. The fraction of high-angle grain boundaries in the sample subjected to four I-ECAP passes lay within 53 to 57 pct depending on the examined plane. The mechanism of grain refinement in Al-Mg-Si alloy was found to be distinctly different from that in pure aluminum with the grain rotation being more prominent than the grain subdivision, which was attributed to lower stacking fault energy and the reduced mobility of dislocations in the alloy. The ultimate tensile strength increased more than twice, whereas the yield strength was more than threefold. Additionally, the plates processed by I-ECAP exhibited low anisotropy of mechanical properties (in plane and across the thickness) in comparison to other SPD processing methods, which makes them attractive for further processing and applications.

The effect of light soaking on crystalline silicon surface passivation by atomic layer deposited Al2O3

NASA Astrophysics Data System (ADS)

Liao, Baochen; Stangl, Rolf; Mueller, Thomas; Lin, Fen; Bhatia, Charanjit S.; Hoex, Bram

2013-01-01

The effect of light soaking of crystalline silicon wafer lifetime samples surface passivated by thermal atomic layer deposited (ALD) Al2O3 is investigated in this paper. Contrary to other passivation materials used in solar cell applications (i.e., SiO2, SiNx), using thermal ALD Al2O3, an increase in effective carrier lifetime after light soaking under standard testing conditions is observed for both p-type (˜45%) and n-type (˜60%) FZ c-Si lifetime samples. After light soaking and storing the samples in a dark and dry environment, the effective lifetime decreases again and practically returns to the value before light soaking. The rate of lifetime decrease after light soaking is significantly slower than the rate of lifetime increase by light soaking. To investigate the underlying mechanism, corona charge experiments are carried out on p-type c-Si samples before and after light soaking. The results indicate that the negative fixed charge density Qf present in the Al2O3 films increases due to the light soaking, which results in an improved field-effect passivation. Numerical calculations also confirm that the improved field-effect passivation is the main contributor for the increased effective lifetime after light soaking. To further understand the light soaking phenomenon, a kinetic model—a charge trapping/de-trapping model—is proposed to explain the time dependent behavior of the lifetime increase/decrease observed under/after light soaking. The trap model fits the experimental results very well. The observed light enhanced passivation for ALD Al2O3 passivated c-Si is of technological relevance, because solar cell devices operate under illumination, thus an increase in solar cell efficiency due to light soaking can be expected.

Synthesis of SrAl2O4:Eu2+ phosphors co-doped with Dy3+, Tb3+, Si4+ and optimization of co-doping amount by response surface method

NASA Astrophysics Data System (ADS)

Wang, Huan; Liang, Xiaoping; Liu, Kai; Zhou, Qianqian; Chen, Peng; Wang, Jun; Li, Jianxin

2016-03-01

Dy3+ doped SrAl2O4:Eu2+ phosphors were synthesized by high temperature solid phase method in a weak reducing atmosphere (5% H2 + 95% N2). The relationship between the crushed granularity and the phosphors brightness was studied. The effect of co-doping amount of Dy3+, Tb3+ and Si4+ on the structure and properties of SrAl2O4:Eu2+ via response surface method was investigated. Photoluminescence measurement results showed that the initial afterglow brightness of 0.002 mol% Dy3+ doped SrAl2O4:Eu2+0.002 phosphors decreased after first increased within the sintering temperature range from 1150 to 1400 °C, which created the highest value of 12,101 mcd/m2 at 1300 °C. Numerous coarse particles in the powder ought to be crushed for the practical application, however, the brightness became lower accompanied by the decrease of the granularity. The luminescence property of SrAl2O4:Eu2+ sintered at 1200 °C improved by co-doping Dy3+-Tb3+-Si4+. The results of response surface method showed that the influence extent on the luminescence property was Dy3+ > Tb3+ > Si4+. When the co-doping amount in SrAl2O4:Eu2+0.002 phosphors of Dy3+, Tb3+ and Si4+ was 0.001 mol%, 0.0005 mol% and 0.002 mol%, respectively, the initial afterglow brightness of SrAl2O4 was up to the highest value of 12,231 mcd/m2, which was in good agreement on the predicted maximum value of 12,519 mcd/m2 with the optimum co-doping amount of 0.0015 mol% Dy3+, 0.0005 mol% Tb3+ and 0.0017 mol% Si4+. The brightness of co-doped phosphors not only increased by 56.79% than that of SrAl2O4:Eu2+0.002, Dy3+0.002 sintered at 1200 °C, but also was above that of 1300 °C. The emission spectra results showed that, compared with 0.001 mol% Dy3+ doped phosphor, the emission peak of 0.001 mol% Dy3+-0.001 mol% Tb3+ co-doped phosphor generated red shift and increased by 9.3% in emission intensity; 0.001 mol% Dy3+-0.004 mol% Si4+ and 0.001 mol% Dy3+-0.001 mol% Tb3+-0.004 mol% Si4+ co-doped SrAl2O4:Eu2+0.002 emission peak created blue shift and increased by 37.2% and 47.6% in emission intensity, respectively.

Optimization of Machining Process Parameters for Surface Roughness of Al-Composites

NASA Astrophysics Data System (ADS)

Sharma, S.

2013-10-01

Metal matrix composites (MMCs) have become a leading material among the various types of composite materials for different applications due to their excellent engineering properties. Among the various types of composites materials, aluminum MMCs have received considerable attention in automobile and aerospace applications. These materials are known as the difficult-to-machine materials because of the hardness and abrasive nature of reinforcement element-like silicon carbide particles. In the present investigation Al-SiC composite was produced by stir casting process. The Brinell hardness of the alloy after SiC addition had increased from 74 ± 2 to 95 ± 5 respectively. The composite was machined using CNC turning center under different machining parameters such as cutting speed (S), feed rate (F), depth of cut (D) and nose radius (R). The effect of machining parameters on surface roughness (Ra) was studied using response surface methodology. Face centered composite design with three levels of each factor was used for surface roughness study of the developed composite. A response surface model for surface roughness was developed in terms of main factors (S, F, D and R) and their significant interactions (SD, SR, FD and FR). The developed model was validated by conducting experiments under different conditions. Further the model was optimized for minimum surface roughness. An error of 3-7 % was observed in the modeled and experimental results. Further, it was fond that the surface roughness of Al-alloy at optimum conditions is lower than that of Al-SiC composite.

Highly Corrosion Resistant and Sandwich-like Si3N4/Cr-CrNx/Si3N4 Coatings Used for Solar Selective Absorbing Applications.

PubMed

Zhang, Ke; Du, Miao; Haoa, Lei; Meng, Jianping; Wang, Jining; Mi, Jing; Liu, Xiaopeng

2016-12-14

Highly corrosion resistant, layer-by-layer nanostructured Si 3 N 4 /Cr-CrN x /Si 3 N 4 coatings were deposited on aluminum substrate by DC/RF magnetron sputtering. Corrosion resistance experiments were performed in 0.5, 1.0, 3.0, and 5.0 wt % NaCl salt spray at 35 °C for 168 h. Properties of the coatings were comprehensively investigated in terms of optical property, surface morphology, microstructure, elemental valence state, element distribution, and potentiodynamic polarization. UV-vis-near-IR spectrophotometer and FTIR measurements show that the change process in optical properties of Si 3 N 4 /Cr-CrN x /Si 3 N 4 /Al coatings can be divided into three stages: a rapid active degradation stage, a steady passivation stage, and a transpassivation degradation stage. With the increase in the concentration of NaCl salt spray, solar absorptance and thermal emittance experienced a slight degradation. SEM images reveal that there is an increase in surface defects, such as microcracks and holes and -cracks. XRD and TEM measurements indicate that the phase structure changed partially and the content of CrO x and Al 2 O 3 has increased. Auger electron spectroscopy shows that the elements of Cr, N, and O have undergone a minor diffusion. Electrochemical polarization curves show that the as-deposited Si 3 N 4 /Cr-CrN x /Si 3 N 4 /Al coatings have excellent corrosion resistance of 3633.858 kΩ, while after corroding in 5.0 wt % NaCl salt spray for 168 h the corrosion resistance dropped to 13.759 kΩ. However, these coatings still have an outstanding performance of high solar absorptance of 0.924 and low thermal emittance of 0.090 after corroding in 3.0 wt % NaCl salt spray for 120 h. Thus, the Si 3 N 4 /Cr-CrN x /Si 3 N 4 /Al coating is a good choice for solar absorber coatings applied in the high-saline environment.

Identification of phases in the interaction layer between U-Mo-Zr/Al and U-Mo-Zr/Al-Si

DOE Office of Scientific and Technical Information (OSTI.GOV)

Varela, C.L. Komar; Arico, S.F.; Mirandou, M.

Out-of-pile diffusion experiments were performed between U-7wt.% Mo-1wt.% Zr and Al or Al A356 (7,1wt.% Si) at 550 deg. C. In this work morphological characterization and phase identification on both interaction layer are presented. They were carried out by the use of different techniques: optical and scanning electron microscopy, X-Ray diffraction and WDS microanalysis. In the interaction layer U-7wt.% Mo-1wt.% Zr/Al, the phases UAl{sub 3}, UAl{sub 4}, Al{sub 20}Mo{sub 2}U and Al{sub 43}Mo{sub 4}U{sub 6} were identified. In the interaction layer U-7wt.% Mo-1wt.% Zr/Al A356, the phases U(Al, Si) with 25at.% Si and Si{sub 5}U{sub 3} were identified. This lastmore » phase, with a higher Si concentration, was identified with XRD Synchrotron radiation performed at the National Synchrotron Light Laboratory (LNLS), Campinas, Brasil. (author)« less

Defect reduction in Si-doped Al{sub 0.45}Ga{sub 0.55}N films by SiN{sub x} interlayer method

DOE Office of Scientific and Technical Information (OSTI.GOV)

Li, Yang; Chen, Shengchang; Kong, Man

2014-01-28

The dislocation density in AlGaN epitaxial layers with Al content as high as 45% grown on sapphire substrates has been effectively reduced by introducing an in-situ deposited SiN{sub x} nanomask layer in this study. By closely monitoring the evolution of numerous material properties, such as surface morphology, dislocation density, photoluminescence, strain states, and electron mobility of the Si-Al{sub 0.45}Ga{sub 0.55}N layers as the functions of SiN{sub x} interlayer growth time, the surface coverage fraction of SiN{sub x} is found to be a crucial factor determining the strain states and dislocation density. The dependence of the strain states and the dislocationmore » density on the surface coverage fraction of SiN{sub x} nanomask supports the very different growth models of Al-rich AlGaN on SiN{sub x} interlayer due to the reduced nucleation selectivity compared with the GaN counterpart. Compared with GaN, which can only nucleate at open pores of SiN{sub x} nanomask, Al-rich AlGaN can simultaneously nucleate at both open pores and SiN{sub x} covered areas. Dislocations will annihilate at the openings due to the 3D growth initiated on the opening area, while 2D growth mode is preserved on SiN{sub x} and the threading dislocations are also preserved. During the following growth process, lateral overgrowth will proceed from the Al{sub 0.45}Ga{sub 0.55}N islands on the openings towards the regions covered by SiN{sub x}, relaxing the compressive strain and bending the dislocations at the same time.« less

In-situ synthesis of MoSi{sub 2}-Al{sub 2}O{sub 3} composite by a thermite reaction

DOE Office of Scientific and Technical Information (OSTI.GOV)

Deevi, S.C.; Deevi, S.

1995-08-01

In this paper, the authors discuss the reaction mechanism involved in the thermite reaction leading to the synthesis of a composite since in an actual combustion synthesis, the reaction propagates at a velocity of 10 to 20 mm/sec. Reaction mechanism was determined by using a differential thermal analysis (DTA) and X-ray diffraction (XRD). During the combustion synthesis of MoSi{sub 2}-{alpha}Al{sub 2}O{sub 3}, reaction of MoO{sub 3}, Al and Si occurs rapidly and the reactants and products are expected to be in the liquid state at the combustion temperature. MoO{sub 3} is first reduced to MoO{sub 2}, and the reaction betweenmore » MoO{sub 2}, Al and Si leads to a composite of MoSi{sub 2}-{alpha}Al{sub 2}O{sub 3}. Differential thermal analysis reveals that the onset of exothermic reactions is preceded by melting indicating the necessity of molten Al for the synthesis of the composite. The reaction between MoO{sub 2} + 2Al +2Si can be moderated with Mo-Si mixtures such that the ratio of MoSi{sub 2} to Al{sub 2}O{sub 3} can be increased in the composite of MoSi{sub 2}-{alpha}Al{sub 2}O{sub 3}.« less

Refractive index and compressibility of LiAlSi{sub 3}O{sub 8} glass in the pressure range up to 6.0 GPa

DOE Office of Scientific and Technical Information (OSTI.GOV)

Kuryaeva, R.G., E-mail: rufina@igm.nsc.ru; Dmitrieva, N.V.; Surkov, N.V.

2016-02-15

Highlights: • Refractive index and the compressibility of LiAlSi{sub 3}O{sub 8} glass are obtained. • Among Li(Na,K)AlSi{sub 3}O{sub 8} glasses LiAlSi{sub 3}O{sub 8} glass has the lowest compressibility. • Degree of depolymerization (NBO/T = 0.31) for LiAlSi{sub 3}O{sub 8} glass was calculated. • NBO/T = 0.31 indicates a high content of NBOs atoms and Al in LiAlSi{sub 3}O{sub 8} glass. • Proposed reaction corresponds to the condition of the existence of ∼9% Al. - Abstract: The refractive index and the relative changes in the density for LiAlSi{sub 3}O{sub 8} glass in the pressure range up to 6.0 GPa were obtainedmore » using a polarization-interference microscope and an apparatus with diamond anvils. The results were compared with the previous data for the NaAlSi{sub 3}O{sub 8} and KAlSi{sub 3}O{sub 8} glasses. The compressibility of glasses increases in a series of alkali metal cations Li{sup +}, Na{sup +}, K{sup +}. From the previously found dependence of the compressibility (at P = 4.0 GPa) on the degree of depolymerization the value of NBO/T = 0.31 for LiAlSi{sub 3}O{sub 8} glass was calculated. A high degree of depolymerization of the LiAlSi{sub 3}O{sub 8} glass indicates not only a high content of NBOs atoms in the structural network, but also the presence of highly coordinated aluminum (according to the literature data ∼9%). The proposed schematic reaction for the formation of different structural groups corresponds to the condition of the existence of 9% highly coordinated aluminum.« less

The influence of Na + and Ca 2+ ions on the SiO 2-AlPO 4 materials structure — IR and Raman studies

NASA Astrophysics Data System (ADS)

Rokita, M.; Mozgawa, W.; Handke, M.

2001-09-01

The series of samples containing 0-20 mol% of NaCaPO4 and 20-0 mol% of AlPO4, respectively, with the constant amount of SiO2 (80 mol%) have been selected. The materials were prepared using both sol-gel as well as aerosil pseudo-aqua solution method. The AlPO4·SiO2 and NaCaPO4·SiO2 (80 mol% of SiO2) samples have been prepared. IR and Raman spectra of these samples are presented. The spectra of materials from NaCaPO4-AlPO4-SiO2 system are compared to those of NaCaPO4·SiO2 and AlPO4·SiO2 sample (samples without Al3+ or Na+ and Ca2+ cations, respectively). The studies have enabled us to identify the bands arising from the internal and lattice vibrations. The slight differences between the spectra of sol-gel and aerosil pseudo-aqua solution materials are pointed out and discussed. The influence of Na+ and Ca2+ ions on the AlPO4-SiO2 materials structure is analysed.

High-Strength Ultra-Fine-Grained Hypereutectic Al-Si-Fe-X (X = Cr, Mn) Alloys Prepared by Short-Term Mechanical Alloying and Spark Plasma Sintering

PubMed Central

Průša, Filip; Bláhová, Markéta; Vojtěch, Dalibor; Kučera, Vojtěch; Bernatiková, Adriana; Kubatík, Tomáš František; Michalcová, Alena

2016-01-01

In this work, Al-20Si-10Fe-6Cr and Al-20Si-10Fe-6Mn (wt %) alloys were prepared by a combination of short-term mechanical alloying and spark plasma sintering. The microstructure was composed of homogeneously dispersed intermetallic particles forming composite-like structures. X-ray diffraction analysis and TEM + EDS analysis determined that the α-Al along with α-Al15(Fe,Cr)3Si2 or α-Al15(Fe,Mn)3Si2 phases were present, with dimensions below 130 nm. The highest hardness of 380 ± 7 HV5 was observed for the Al-20Si-10Fe-6Mn alloy, exceeding the hardness of the reference as-cast Al-12Si-1Cu-1 Mg-1Ni alloy (121 ± 2 HV5) by nearly a factor of three. Both of the prepared alloys showed exceptional thermal stability with the hardness remaining almost the same even after 100 h of annealing at 400 °C. Additionally, the compressive strengths of the Al-20Si-10Fe-6Cr and Al-20Si-10Fe-6Mn alloys reached 869 MPa and 887 MPa, respectively, and had virtually the same values of 870 MPa and 865 MPa, respectively, even after 100 h of annealing. More importantly, the alloys showed an increase in ductility at 400 °C, reaching several tens of percent. Thus, both of the investigated alloys showed better mechanical properties, including superior hardness, compressive strength and thermal stability, as compared to the reference Al-10Si-1Cu-1Mg-1Ni alloy, which softened remarkably, reducing its hardness by almost 50% to 63 ± 8 HV5. PMID:28774094

Effect of Copper Coated SiC Reinforcements on Microstructure, Mechanical Properties and Wear of Aluminium Composites

NASA Astrophysics Data System (ADS)

Kori, P. S.; Vanarotti, Mohan; Angadi, B. M.; Nagathan, V. V.; Auradi, V.; Sakri, M. I.

2017-08-01

Experimental investigations are carried out to study the influence of copper coated Silicon carbide (SiC) reinforcements in Aluminum (Al) based Al-SiC composites. Wear behavior and mechanical Properties like, ultimate tensile strength (UTS) and hardness are studied in the present work. Experimental results clearly revealed that, an addition of SiC particles (5, 10 and 15 Wt %) has lead in the improvement of hardness and ultimate tensile strength. Al-SiC composites containing the Copper coated SiC reinforcements showed better improvement in mechanical properties compared to uncoated ones. Characterization of Al-SiC composites are carried out using optical photomicrography and SEM analysis. Wear tests are carried out to study the effects of composition and normal pressure using Pin-On Disc wear testing machine. Results suggested that, wear rate decreases with increasing SiC composition, further an improvement in wear resistance is observed with copper coated SiC reinforcements in the Al-SiC metal matrix composites (MMC’s).

Fatigue behavior and life prediction of a SiC/Ti-24Al-11Nb composite under isothermal conditions. Ph.D. Thesis

NASA Technical Reports Server (NTRS)

Bartolotta, Paul A.

1991-01-01

Metal Matrix Composites (MMC) and Intermetallic Matrix Composites (IMC) were identified as potential material candidates for advanced aerospace applications. They are especially attractive for high temperature applications which require a low density material that maintains its structural integrity at elevated temperatures. High temperature fatigue resistance plays an important role in determining the structural integrity of the material. This study attempts to examine the relevance of test techniques, failure criterion, and life prediction as they pertain to an IMC material, specifically, unidirectional SiC fiber reinforced titanium aluminide. A series of strain and load controlled fatigue tests were conducted on unidirectional SiC/Ti-24Al-11Nb composite at 425 and 815 C. Several damage mechanism regimes were identified by using a strain-based representation of the data, Talreja's fatigue life diagram concept. Results of these tests were then used to address issues of test control modes, definition of failure, and testing techniques. Finally, a strain-based life prediction method was proposed for an IMC under tensile cyclic loadings at elevated temperatures.

Facile fabrication of nanofluidic diode membranes using anodic aluminium oxide

NASA Astrophysics Data System (ADS)

Wu, Songmei; Wildhaber, Fabien; Vazquez-Mena, Oscar; Bertsch, Arnaud; Brugger, Juergen; Renaud, Philippe

2012-08-01

Active control of ion transport plays important roles in chemical and biological analytical processes. Nanofluidic systems hold the promise for such control through electrostatic interaction between ions and channel surfaces. Most existing experiments rely on planar geometry where the nanochannels are generally very long and shallow with large aspect ratios. Based on this configuration the concepts of nanofluidic gating and rectification have been successfully demonstrated. However, device minimization and throughput scaling remain significant challenges. We report here an innovative and facile realization of hetero-structured Al2O3/SiO2 (Si) nanopore array membranes by using pattern transfer of self-organized nanopore structures of anodic aluminum oxide (AAO). Thanks to the opposite surface charge states of Al2O3 (positive) and SiO2 (negative), the membrane exhibits clear rectification of ion current in electrolyte solutions with very low aspect ratios compared to previous approaches. Our hetero-structured nanopore arrays provide a valuable platform for high throughput applications such as molecular separation, chemical processors and energy conversion.Active control of ion transport plays important roles in chemical and biological analytical processes. Nanofluidic systems hold the promise for such control through electrostatic interaction between ions and channel surfaces. Most existing experiments rely on planar geometry where the nanochannels are generally very long and shallow with large aspect ratios. Based on this configuration the concepts of nanofluidic gating and rectification have been successfully demonstrated. However, device minimization and throughput scaling remain significant challenges. We report here an innovative and facile realization of hetero-structured Al2O3/SiO2 (Si) nanopore array membranes by using pattern transfer of self-organized nanopore structures of anodic aluminum oxide (AAO). Thanks to the opposite surface charge states of Al2O3 (positive) and SiO2 (negative), the membrane exhibits clear rectification of ion current in electrolyte solutions with very low aspect ratios compared to previous approaches. Our hetero-structured nanopore arrays provide a valuable platform for high throughput applications such as molecular separation, chemical processors and energy conversion. Electronic supplementary information (ESI) available: Pattern transfer of local AAO mask into Si layers of different thickness; characterization of the Ag/AgCl electrodes and the cell constant; control experiments of mono-charged nanopore membranes; and simulation of ionic transport in nanofluidic diodes. See DOI: 10.1039/c2nr31243c

Application of the Billet Casting Method to Determine the Onset of Incipient Melting of 319 Al Alloy Engine Blocks

NASA Astrophysics Data System (ADS)

Lombardi, A.; Ravindran, C.; MacKay, R.

2015-06-01

The increased use of Al for automotive applications has resulted from the need to improve vehicle fuel efficiency. Aluminum alloy engine blocks fulfil the need of lightweighting. However, there are many challenges associated with thermo-mechanical mismatch between Al and the gray cast iron cylinder liners, which result in large tensile residual stress along the cylinder bores. This requires improced mechanical properties in this region to prevent premature engine failure. In this study, replicating billet castings were used to simulate the engine block solution heat treatment process and determine the onset of incipient melting. Microstructural changes during heat treatment were assessed with SEM and EDX, while thermal analysis was carried out using differential scanning calorimetry. The results suggest that solution heat treatment at 500 °C was effective in dissolving secondary phase particles, while solutionizing at 515 or 530 °C caused incipient melting of Al2Cu and Al5Mg8Cu2Si6. Incipient melting caused the formation ultra-fine eutectic clusters consisting of Al, Al2Cu, and Al5Mg8Cu2Si6 on quenching. In addition, DSC analysis found that incipient melting initiated at 507 °C for all billets, although the quantity of local melting reduced with microstructural refinement as evidenced by smaller endothermic peaks and energy absorption. The results from this study will assist in improving engine block casting integrity and process efficiency.

Stable solidification of silica-based ammonium molybdophosphate by allophane: Application to treatment of radioactive cesium in secondary solid wastes generated from fukushima.

PubMed

Wu, Yan; Lee, Chuan-Pin; Mimura, Hitoshi; Zhang, Xiaoxia; Wei, Yuezhou

2018-01-05

Silica-based ammonium molybdophosphate (AMP/SiO 2 ) is an absorbent material that can effectively remove Cs from radioactive-contaminated wastewater (RCW) generated by Fukushima nuclide accident. Pressing/sintering method was used for final disposal of secondary waste (spent absorbent) to achieve the volume reduction of AMP-Cs/SiO 2 (AMP/SiO 2 saturation adsorption of Cs) and stable solidification of Cs by adding natural allophane. The structure of AMP-Cs completely collapsed at approximately 700°C, and most Mo and P species in AMP sublimed. The optimal sintering temperature was estimated as 900°C. The stable crystalline phase of Cs 4 Al 4 Si 20 O 48 was recrystallized by the reaction of Cs 2 O, Al 2 O 3 , and SiO 2 , and the immobilization ratio of Cs was approximately 100%. The leachability of Cs from the sintered product in distilled water was approximately 0.41%. The high immobilization and low leachability of Cs were attributed to the excellent solidification properties of the sintered products of AMP-Cs/SiO 2 -allophane. Copyright © 2017 Elsevier B.V. All rights reserved.

Effect of Aluminum Alloying on the Hot Deformation Behavior of Nano-bainite Bearing Steel

NASA Astrophysics Data System (ADS)

Yang, Z. N.; Dai, L. Q.; Chu, C. H.; Zhang, F. C.; Wang, L. W.; Xiao, A. P.

2017-12-01

Interest in using aluminum in nano-bainite steel, especially for high-carbon bearing steel, is gradually growing. In this study, GCr15SiMo and GCr15SiMoAl steels are introduced to investigate the effect of Al alloying on the hot deformation behavior of bearing steel. Results show that the addition of Al not only notably increases the flow stress of steel due to the strong strengthening effect of Al on austenite phase, but also accelerates the strain-softening rates for its increasing effect on stacking fault energy. Al alloying also increases the activation energy of deformation. Two constitutive equations with an accuracy of higher than 0.99 are proposed. The constructed processing maps show the expanded instability regions for GCr15SiMoAl steel as compared with GCr15SiMo steel. This finding is consistent with the occurrence of cracking on the GCr15SiMoAl specimens, revealing that Al alloying reduces the high-temperature plasticity of the bearing steel. On the contrary, GCr15SiMoAl steel possesses smaller grain size than GCr15SiMo steel, manifesting the positive effect of Al on bearing steel. Attention should be focused on the hot working process of bearing steel with Al.

Growth of BaSi2 film on Ge(100) by vacuum evaporation and its photoresponse properties

NASA Astrophysics Data System (ADS)

Trinh, Cham Thi; Nakagawa, Yoshihiko; Hara, Kosuke O.; Kurokawa, Yasuyoshi; Takabe, Ryota; Suemasu, Takashi; Usami, Noritaka

2017-05-01

We have successfully grown a polycrystalline orthorhombic BaSi2 film on a Ge(100) substrate by an evaporation method. Deposition of an amorphous Si (a-Si) film on the Ge substrate prior to BaSi2 evaporation plays a critical role in obtaining a high-quality BaSi2 film. By controlling substrate temperature and the thickness of the a-Si film, a crack-free and single-phase polycrystalline orthorhombic BaSi2 film with a long carrier lifetime of 1.5 µs was obtained on Ge substrates. The photoresponse property of the ITO/BaSi2/Ge/Al structure was clearly observed, and photoresponsivity was found to increase with increasing substrate temperature during deposition of a-Si. Furthermore, the BaSi2 film grown on Ge showed a higher photoresponsivity than that grown on Si, indicating the potential application of evaporated BaSi2 on Ge to thin-film solar cells.

A survey of some metallographic etching reagents for restoration of obliterated engraved marks on aluminium-silicon alloy surfaces.

PubMed

Uli, Norjaidi; Kuppuswamy, R; Amran, Mohd Firdaus Che

2011-05-20

A brief survey to assess the sensitivity and efficacy of some common etching reagents for revealing obliterated engraved marks on Al-Si alloy surfaces is presented. Experimental observations have recommended use of alternate swabbing of 10% NaOH and 10% HNO(3) on the obliterated surfaces for obtaining the desired results. The NaOH etchant responsible for bringing back the original marks resulted in the deposition of some dark coating that has masked the recovered marks. The coating had been well removed by dissolving it in HNO(3) containing 10-20% acid. However, the above etching procedure was not effective on aluminium (99% purity) and Al-Zn-Mg-Cu alloy surfaces. Also the two reagents (i) immersion in 10% aq. phosphoric acid and (ii) alternate swabbing of 60% HCl and 40% NaOH suggested earlier for high strength Al-Zn-Mg-Cu alloys [23] were quite ineffective on Al-Si alloys. Thus different aluminium alloys needed different etching treatments for successfully restoring the obliterated marks. Al-Si alloys used in casting find wide applications especially in the manufacture of engine blocks of motor vehicles. Hence, the results presented in this paper are of much relevance in serial number restoration problems involving this alloy. Copyright © 2010 Elsevier Ireland Ltd. All rights reserved.

Effect of Alloying Additions on Oxidation Behaviors of Ni-Fe Based Superalloy for Ultra-Supercritical Boiler Applications

NASA Astrophysics Data System (ADS)

Lu, Jintao; Yang, Zhen; Zhao, Xinbao; Yan, Jingbo; Gu, Y.

A new kind of Ni-Fe-based superalloy is designed recently for 750 °C-class A-USC boiler tube. The oxidation behavior of the designed alloys with various combinations of anti-oxidation additions, Cr, Al and Si, was investigated at 750 °C and 850 °C, respectively. The results indicated that the oxidation rate of tested alloys decreased with the increase of the sum of additions. Cr addition may drop the relative constant of parabolic rate greatly when temperature is raised. But the oxide scale, mainly consisted of NiCr spinel at 750 °C and NiCrMn spinel at 850 °C, was similar while the Cr content is in a range of 20-25 wt.% at tested temperatures. Al addition, however, showed the best effective to reduce the oxidation rates. Internal Al-rich oxide was observed at the scale/metal interface for alloys added with high content of Al and was increased with Al content increase. Very tiny difference between the oxide scales of the Si-added alloys was identified when Si content varies among 0.02-0.05 wt.%. Basing on these results, this presentation discussed the optimum combination of anti-oxidation additions as well as oxidation mechanisms in the designed Ni-Fe-base superalloy.

Characterization of an Additive Manufactured TiAl Alloy—Steel Joint Produced by Electron Beam Welding

PubMed Central

Baudana, Giorgio; Lorusso, Massimo; Ugues, Daniele; Fino, Paolo

2018-01-01

In this work, the characterization of the assembly of a steel shaft into a γ-TiAl part for turbocharger application, obtained using Electron Beam Welding (EBW) technology with a Ni-based filler, was carried out. The Ti-48Al-2Nb-0.7Cr-0.3Si (at %) alloy part was produced by Electron Beam Melting (EBM). This additive manufacturing technology allows the production of a lightweight part with complex shapes. The replacement of Nickel-based superalloys with TiAl alloys in turbocharger automotive applications will lead to an improvement of the engine performance and a substantial reduction in fuel consumption and emission. The welding process allows a promising joint to be obtained, not affecting the TiAl microstructure. Nevertheless, it causes the formation of diffusive layers between the Ni-based filler and both steel and TiAl, with the latter side being characterized by a very complex microstructure, which was fully characterized in this paper by means of Scanning Electron Microscopy, Energy Dispersive X-ray Spectroscopy, and nanoindentation. The diffusive interface has a thickness of about 6 µm, and it is composed of several layers. Specifically, from the TiAl alloy side, we find a layer of Ti3Al followed by Al3NiTi2 and AlNi2Ti. Subsequently Ni becomes more predominant, with a first layer characterized by abundant carbide/boride precipitation, and a second layer characterized by Si-enrichment. Then, the chemical composition of the Ni-based filler is gradually reached. PMID:29342074

Microstructures and growth mechanisms of GaN films epitaxially grown on AlN/Si hetero-structures by pulsed laser deposition at different temperatures.

PubMed

Wang, Wenliang; Yang, Weijia; Lin, Yunhao; Zhou, Shizhong; Li, Guoqiang

2015-11-13

2 inch-diameter GaN films with homogeneous thickness distribution have been grown on AlN/Si(111) hetero-structures by pulsed laser deposition (PLD) with laser rastering technique. The surface morphology, crystalline quality, and interfacial property of as-grown GaN films are characterized in detail. By optimizing the laser rastering program, the ~300 nm-thick GaN films grown at 750 °C show a root-mean-square (RMS) thickness inhomogeneity of 3.0%, very smooth surface with a RMS surface roughness of 3.0 nm, full-width at half-maximums (FWHMs) for GaN(0002) and GaN(102) X-ray rocking curves of 0.7° and 0.8°, respectively, and sharp and abrupt AlN/GaN hetero-interfaces. With the increase in the growth temperature from 550 to 850 °C, the surface morphology, crystalline quality, and interfacial property of as-grown ~300 nm-thick GaN films are gradually improved at first and then decreased. Based on the characterizations, the corresponding growth mechanisms of GaN films grown on AlN/Si hetero-structures by PLD with various growth temperatures are hence proposed. This work would be beneficial to understanding the further insight of the GaN films grown on Si(111) substrates by PLD for the application of GaN-based devices.

Transport and retention of engineered Al2O3, TiO2, and SiO2 nanoparticles through various sedimentary rocks.

PubMed

Bayat, Ali Esfandyari; Junin, Radzuan; Shamshirband, Shahaboddin; Chong, Wen Tong

2015-09-16

Engineered aluminum oxide (Al2O3), titanium dioxide (TiO2), and silicon dioxide (SiO2) nanoparticles (NPs) are utilized in a broad range of applications; causing noticeable quantities of these materials to be released into the environment. Issues of how and where these particles are distributed into the subsurface aquatic environment remain as major challenges for those in environmental engineering. In this study, transport and retention of Al2O3, TiO2, and SiO2 NPs through various saturated porous media were investigated. Vertical columns were packed with quartz-sand, limestone, and dolomite grains. The NPs were introduced as a pulse suspended in aqueous solutions and breakthrough curves in the column outlet were generated using an ultraviolet-visible spectrophotometer. It was found that Al2O3 and TiO2 NPs are easily transported through limestone and dolomite porous media whereas NPs recoveries were achieved two times higher than those found in the quartz-sand. The highest and lowest SiO2-NPs recoveries were also achieved from the quartz-sand and limestone columns, respectively. The experimental results closely replicated the general trends predicted by the filtration and DLVO calculations. Overall, NPs mobility through a porous medium was found to be strongly dependent on NP surface charge, NP suspension stability against deposition, and porous medium surface charge and roughness.

Structure and magnetic properties of amorphous and nanocrystalline Fe 40Co 40Cu 0.5Zr 9Al 2Si 4B 4.5 alloys

NASA Astrophysics Data System (ADS)

Mitra, A.; Kim, H.-Y.; Louzguine, D. V.; Nishiyama, N.; Shen, B.; Inoue, A.

2004-07-01

Crystallisation behaviour and magnetic properties of as-spun and annealed Fe 40Co 40Cu 0.5Zr 9Al 2Si 4B 4.5 alloy have been studied. The annealing was performed at 873 K for 15 min. XRD and TEM studies shows the formation of nanocrystalline α-(Fe,Co)(SiAl) particles with 7.5±2 nm in diameter dispersed in an amorphous matrix. The Curie temperature of the as-spun amorphous ribbon is 736 K. Saturation magnetisation of the annealed sample decreases at a rate of 0.5 emu/g/K in the measured temperature range of 300-1000 K. Excellent room temperature AC magnetic properties are achieved for the nanocrystalline sample. The low value of the imaginary part of the permeability and the high cut-off frequency (20 kHz) suggest that the eddy current contribution in the annealed materials is low. The coercivity of the annealed sample remains almost constant at 95 A/m up to the frequency of 20 kHz. High saturation magnetisation, high Curie temperature and excellent soft magnetic properties in the nanocrystalline state suggests that Fe 40Co 40Cu 0.5Zr 9Al 2Si 4B 4.5 alloy is a strong candidate for high temperature magnetic application.

Tunable Nanoantennas for Surface Enhanced Infrared Absorption Spectroscopy by Colloidal Lithography and Post-Fabrication Etching

NASA Astrophysics Data System (ADS)

Chen, Kai; Duy Dao, Thang; Nagao, Tadaaki

2017-03-01

We fabricated large-area metallic (Al and Au) nanoantenna arrays on Si substrates using cost-effective colloidal lithography with different micrometer-sized polystyrene spheres. Variation of the sphere size leads to tunable plasmon resonances in the middle infrared (MIR) range. The enhanced near-fields allow us to detect the surface phonon polaritons in the natural SiO2 thin layers. We demonstrated further tuning capability of the resonances by employing dry etching of the Si substrates with the nanoantennas acting as the etching masks. The effective refractive index of the nanoantenna surroundings is efficiently decreased giving rise to blueshifts of the resonances. In addition, partial removal of the Si substrates elevates the nanoantennas from the high-refractive-index substrates making more enhanced near-fields accessible for molecular sensing applications as demonstrated here with surface-enhanced infrared absorption (SEIRA) spectroscopy for a thin polymer film. We also directly compared the plasmonic enhancement from the Al and Au nanoantenna arrays.

Wetting and Interfacial Reactivity of Zn-Coated Steel Products with Cu-Si, Cu-Sn and Al-Si Filler Metals for Laser Brazing Application

NASA Astrophysics Data System (ADS)

Koltsov, Alexey; Cretteur, Laurent

2018-03-01

The laser brazing process is successfully applied in automotive industry for joining of roofs and hatchbacks of vehicles. The bad wetting of the brazing alloy during the process can lead to the formation of random external porosities which are not allowed on visible parts. This paper describes the wettability and reactivity mechanisms at short contact time of Cu and Al matrix brazing alloys with different reactive elements (Si, Sn) on different steel products such as hot-dip galvanized steels, galvannealed steel and bare steel. Wetting experiments were carried out by the dispensed drop technique. The effects of alloying elements and brazing alloy matrix on interfacial reactivity are discussed. It was found that Cu matrix containing 3 wt.% Si is the most favorable for short time liquid/solid adhesion relatively to the other studied brazing alloy compositions. The brazing ability of different steel products is well correlated with the wettability and interfacial reactivity results.

Synthesis and characterization of AlTiSiN/CrSiN multilayer coatings by cathodic arc ion-plating

NASA Astrophysics Data System (ADS)

Yang, B.; Tian, C. X.; Wan, Q.; Yan, S. J.; Liu, H. D.; Wang, R. Y.; Li, Z. G.; Chen, Y. M.; Fu, D. J.

2014-09-01

AlTiSiN/CrSiN multilayer coatings were deposited on Si (1 0 0) and cemented carbide substrates using Cr, AlTi cathodes and SiH4 gases by cathodic arc ion plating system. The influences of SiH4 gases flowrate on the structural and mechanical properties of the coatings were investigated, systematically. AlTiSiN/CrSiN coatings exhibit a B1 NaCl-type nano-multilayered structure in which the CrSiN nano-layers alternate with AlTiSiN nano-layers with multiple orientations of crystal planes indicated by XRD patterns and TEM. Si contents of the coatings increase with increasing SiH4 flowrate. The hardness of the coatings increases to the maximum value of 3500 Hv0.05 with increasing SiH4 flowrate from 20 to 40 sccm and then decreases with further addition of SiH4 gases. A higher adhesive force of 73 N is obtained at the flowrate of 48 sccm. The coatings exhibit different tribological performance when the mating materials were varied from Si3N4 to cemented carbide balls and the variation of friction coefficients of the coatings against Si3N4 influenced by SiH4 flowrate are not obvious as against cemented carbide balls.

Structural Evolution and Atom Clustering in β-SiAlON: β-Si 6–z Al z O z N 8–z

DOE Office of Scientific and Technical Information (OSTI.GOV)

Cozzan, Clayton; Griffith, Kent J.; Laurita, Geneva

2017-02-06

SiAlON ceramics, solid solutions based on the Si 3N 4 structure, are important, lightweight structural materials with intrinsically high strength, high hardness, and high thermal and chemical stability. Described by the chemical formula β-Si 6–zAl zO zN 8–z, from a compositional viewpoint, these materials can be regarded as solid solutions between Si 3N 4 and Al 3O 3N. A key aspect of the structural evolution with increasing Al and O (z in the formula) is to understand how these elements are distributed on the β-Si 3N 4 framework. The average and local structural evolution of highly phase-pure samples of β-Simore » 6–zAl zO zN 8–z with z = 0.050, 0.075, and 0.125 are studied here, using a combination of X-ray diffraction, NMR studies, and density functional theory calculations. Synchrotron X-ray diffraction establishes sample purity and indicates subtle changes in the average structure with increasing Al content in these compounds. Solid-state magic-angle-spinning 27Al NMR experiments, coupled with detailed ab initio calculations of NMR spectra of Al in different AlO qN 4–q tetrahedra (0 ≤ q ≤ 4), reveal a tendency of Al and O to cluster in these materials. Independently, the calculations suggest an energetic preference for Al–O bond formation, instead of a random distribution, in the β-SiAlON system.« less

The chemical phenol extraction of intermetallic particles from casting AlSi5Cu1Mg alloy.

PubMed

Mrówka-Nowotnik, G; Sieniawski, J; Nowotnik, A

2010-03-01

This paper presents a chemical extraction technique for determination of intermetallic phases formed in the casting AlSi5Cu1Mg aluminium alloy. Commercial aluminium alloys contain a wide range of intermetallic particles that are formed during casting, homogenization and thermomechanical processing. During solidification, particles of intermetallics are dispersed in interdendritic spaces as fine primary phases. Coarse intermetallic compounds that are formed in this aluminium alloy are characterized by unique atomic arrangement (crystallographic structure), morphology, stability, physical and mechanical properties. The volume fraction, chemistry and morphology of the intermetallics significantly affect properties and material behaviour during thermomechanical processing. Therefore, accurate determination of intermetallics is essential to understand and control microstructural evolution in Al alloys. Thus, in this paper it is shown that chemical phenol extraction method can be applied for precise qualitative evaluation. The results of optical light microscopy LOM, scanning electron microscopy SEM and X-ray diffraction XRD analysis reveal that as-cast AlSi5Cu1Mg alloy contains a wide range of intermetallic phases such as Al(4)Fe, gamma- Al(3)FeSi, alpha-Al(8)Fe(2)Si, beta-Al(5)FeSi, Al(12)FeMnSi.

Properties investigation and microstructures characterization of SiCp/6061Al composites produced by PM route

NASA Astrophysics Data System (ADS)

Wang, A. Q.; Tian, H. W.; Xie, J. P.

2018-01-01

In this study, 35 vol.% SiC particles with different sizes reinforced 6061 aluminium alloy matrix composites were prepared by a powder metallurgy method. The Scanning Electron Microscope (SEM) images of composites were observed, the Coefficient of Thermal Expansion (CTE) and tensile strength of composites were examined, and the influences of SiC particle size on microstructures and properties of the composites were analyzed. Furthermore, the SiCp/6061Al composites with SiC particle size of 7.5 µm were selected to investigate the SiCp/Al interface microstructure and precipitated phases by the means of SEM, TEM and HRTEM. The study indicated that, with the increase of SiC particle size, the SiC particles distributed more uniformly in the matrix, the CTE of composites increased, but the tensile strength of composites decreased. The SiCp/Al interface in this experiment is clean and smooth, and the combination mechanism of SiC and Al is the formation of a half coherent interface by closely matching of atoms. Some micron-sized coarse intermetallic particles existed in the hot-pressed composites, such as random-shaped Mg2Si, long stick shaped Al15(Mn, Fe, Cu)3Si2. When the composites were solution treated at 510 °C for 2 h and then aging treated at 190 °C for 9 h, except long stick shaped Al15(Mn, Fe, Cu)3Si2, numerous nano-sized precipitated phases (Mg2Si) with diameters of 50-200 nm dispersively distributed in the matrix. After heat treatment, the tensile strength of composite with SiC particle size of 7.5 µm enhance from 298 MPa to 341 MPa.

Athermal metal optics made of nickel plated AlSi40

NASA Astrophysics Data System (ADS)

Gebhardt, Andreas; Kinast, Jan; Rohloff, Ralf-Rainer; Seifert, Walter; Beier, Matthias; Scheiding, Sebastian; Peschel, Thomas

2017-11-01

Metal optics is an inherent part of space instrumentation for years. Diamond turned aluminum (Al6061) mirrors are widely used for application in the mid- and near-infrared (mid-IR and NIR, respectively) spectral range. Aluminum mirrors plated with electroless nickel (NiP) expand the field of application towards multispectral operating instruments down to the ultraviolet wavelengths. Due to the significant mismatch in the coefficient of thermal expansion (CTE) between aluminum and NiP, however, this advantage occurs at the cost of bimetallic bending. Challenging requirements can be met by using bare beryllium or aluminum beryllium composites (AlBeMet) as a CTE tailored substrate material and amorphous NiP as polishable layer. For health reasons, the use of beryllium causes complications in the process chain. Thus, the beryllium approach is subjected to specific applications only. Metal optics has proven to be advantageous in respect of using conventional CNC and ultra-precision fabrication methods to realize complex and light-weighted instrument structures. Moreover, the mirror designs can be effectively optimized for a deterministic system assembly and optimization. Limitations in terms of dimensional stability over temperature and time are mainly given by the inherent material properties (figures of merit) of the substrate material in interaction with the polishing layer. To find an optimal compromise, a thermal matched aluminum-silicon alloy (silicon contents ≍ 40 wt%) plated with NiP (AlSi40/NiP ) was investigated in a joined project of the Max Planck Institute for Astronomy MPIA and the Fraunhofer Institute for Applied Optics and Precision Engineering IOF. The main tasks of the project were the minimization of the bimetallic bending, the development of reliable stabilizing and aging procedures, and the establishment of a proven fabrication method. This paper describes fundamental results regarding the optimization of the athermal material combination. Furthermore, the developed production chain for high quality freeform mirrors made of AlSi40/NiP is pointed out.

Carbothermal synthesis of coatings on silicon carbide fibers

NASA Astrophysics Data System (ADS)

Chen, Linlin

Four kinds of protective coatings---carbide derived carbon (CDC), boron nitride (BN), Al-O-N and BN doped Al-O-N (BAN) have been successfully synthesized on the surface of SiC fibers on the target to enhance the mechanical properties and oxidation resistance of the coated SiC fibers for the application as the reinforcements in the Ceramic Matrix Composites (CMCs) in the high temperatures. First of all, CDC coatings have been uniformly produced on Tyranno ZMI SiC fibers with good thickness control within nanometer accuracy by the chlorination in the temperature range of 550--700°C at atmospheric pressure. Kinetics of the carbon coating growth on the fibers has been systematically studied and thus a good foundation was set up for the further coating synthesis. BN coatings have been synthesized on the surface of SiC powders, fibers and fabrics by a novel carbothermal nitridation method. Non-bridging has been achieved in the BN-coated fiber tows by the nitridation in ammonia at atmospheric pressure in a temperature below 1200°C, which is lower compared to the traditional BN synthesis method and does not cause the degradation of the coated-fibers. BN coatings on the carbon nanotubes have also been formed and unlike the common methods, no additional dopant (such as metal catalyst) is introduced into the system during the BN coatings syntheses, thus the contamination of the final product is avoided. A novel Al-O-N coating has been explored with the most impressive point is that a more than 65% improvement in the tensile strength (up to ˜5.1GPa) and a three-time increase in the Weibull modulus compared to the as-received fibers are resulted by the formation of 200nm Al-O-N coating on the SiC fibers. It exceeds the strength of all other small diameter SiC fibers reported in the literature. Furthermore, BAN coating has also been produced on the surface of SiC fibers and about 20% enhancement in mechanical strength is achieved compared to that of the original fibers. Oxidation experiments of the SiC fibers with four kinds of coatings under 1000°C and 1200°C in air have been carried out and better oxidation resistance of the coated fibers are presented compared to the as-received fibers. In summary, exploration of various coatings synthesis for the SiC fibers has been successfully conducted in this work. The coating material suitable for the SiC fibers should be chosen properly according to its specific application in the CFCCs and well thickness-control to meet the corresponding requirements.

Properties of ceramics prepared using dry discharged waste to energy bottom ash dust.

PubMed

Bourtsalas, Athanasios; Vandeperre, Luc; Grimes, Sue; Themelis, Nicolas; Koralewska, Ralf; Cheeseman, Chris

2015-09-01

The fine dust of incinerator bottom ash generated from dry discharge systems can be transformed into an inert material suitable for the production of hard, dense ceramics. Processing involves the addition of glass, ball milling and calcining to remove volatile components from the incinerator bottom ash. This transforms the major crystalline phases present in fine incinerator bottom ash dust from quartz (SiO(2)), calcite (CaCO(3)), gehlenite (Ca(2)Al(2)SiO(7)) and hematite (Fe(2)O(3)), to the pyroxene group minerals diopside (CaMgSi(2)O(6)), clinoenstatite (MgSi(2)O(6)), wollastonite (CaSiO(3)) together with some albite (NaAlSi(3)O(8)) and andradite (Ca(3)Fe(2)Si(3)O(12)). Processed powders show minimal leaching and can be pressed and sintered to form dense (>2.5 g cm(-3)), hard ceramics that exhibit low firing shrinkage (<7%) and zero water absorption. The research demonstrates the potential to beneficially up-cycle the fine incinerator bottom ash dust from dry discharge technology into a raw material suitable for the production of ceramic tiles that have potential for use in a range of industrial applications. © The Author(s) 2015.

Carbon-shell-constrained silicon cluster derived from Al-Si alloy as long-cycling life lithium ion batteries anode

NASA Astrophysics Data System (ADS)

Su, Junming; Zhang, Congcong; Chen, Xiang; Liu, Siyang; Huang, Tao; Yu, Aishui

2018-03-01

Although silicon is the most promising anode material for Li-ion batteries, large volume expansion during lithiation and delithiation is the main obstacle limiting the commercial application of silicon anodes. There are two ways to alleviate volume expansion and prevent further pulverization of a Si anode: fabrication of a rational nanostructure possessing void spaces and uniform distribution of the conducting sites, without a good balance effect in mitigating the limiting factors and enhancing battery performance. In this paper, we propose a novel nanostructure - a carbon-shell-constrained Si cluster (Si/C shell) with both adequate void space and good distribution of electrical contact sites to guarantee homogeneous lithiation in the initial cycle. Benefiting from the ability to maintain electrical conductivity of the outer carbon shell, even after cluster fragmentation, the Si/C shell synthesized from low-cost commercial Al-Si alloy spheres can deliver 0.03% capacity loss from 100th to 1000th cycles at a current density of 1 A g-1. The Si/C shell sample with the dual functional structure mentioned above can also maintain its own nanostructure during cycling and deliver excellent rate performance. It is a concise and scalable strategy which can simplify the preparation of other alloy anode materials for Li-ion batteries.

High-rate tensile properties of Si-reduced TRIP sheet steels

NASA Astrophysics Data System (ADS)

Choi, Ildong; Park, Yeongdo; Son, Dongmin; Kim, Sung-Joon; Moon, Manbeen

2010-02-01

There have been efforts to develop Si-reduced TRIP steels to improve the wettability of Zn coatings, since the conventional CMnSi-TRIP steels suffer from poor galvanizability. In addition, for the development of potential applications of Si-reduced TRIP steels in vehicle crash management, a better understanding of high strain rate properties is required. In the present study, the effects of alloying elements, such as Cu, Al, Si, and P, on the high-rate tensile properties of Si-reduced TRIP sheet steels were investigated. Tensile tests were performed with a servo-hydraulic tensile testing machine at strain rates ranging from 10-2 to 6 × 102 s-1, and the ultimate tensile strength, elongation, strain rate sensitivity, and absorbed energy were evaluated. The retained austenite volume fractions and carbon content of the specimens were measured using neutron diffraction. The UTS was increased with Cu, Al, Si, and P alloying throughout the strain rate range, and the alloying effect on UTS was considerable with Cu and P. The effects of alloying on the microstructure were not significant. All the steels tested in this study exhibited positive strain rate sensitivity, and the m value at strain rates higher than 10 s-1 was at least two times higher than that at lower strain rates.

Al-TiC composites in situ-processed by ingot metallurgy and rapid solidification technology. Part 2: Mechanical behavior

DOE Office of Scientific and Technical Information (OSTI.GOV)

Tong, X.C.; Fang, H.S.

1998-03-01

In Part 2 of this article, the high-strength Al-Si/TiC composite and the elevated-temperature-resistant Al-Fe(-V-Si)/TiC composite, developed on the basis of the in situ Al-TiC composites (Part 1 of the article), have been evaluated for their room- and elevated-temperature mechanical behavior. The microstructural characteristics of ingot metallurgy (IM) or rapid solidification (RS) Al-Si/TiC and Al-Fe(-V-Si)/TiC composites could be thought of as a combination of the related alloy matrix microstructures and the IM or RS Al/TiC composites. The IM Al/TiC and the Al-Si/TiC composites show superior strength and ductility to the relevant aluminum-based composites. The RS Al/TiC and the Al-Fe-V-Si/TiC exhibit highmore » Young`s moduli and substantial improvements in room- and elevated-temperature tensile properties compared to those of rapidly solidified alloys and conventional composites. The Young`s modulus values of RS Al/TiC and Al-Fe-V-Si/TiC composites are well within Hashin-Shtrikman (H-S) limits, in keeping with the strong interfacial bonding. In the micromechanics approach, the principal strengthening mechanisms for the present dispersed, particle-hardened RS in situ Al-TiC composites would include Orowan strengthening, grain-size and substructure strengthening, and solid-solution strengthening.« less

Effects of Alloying Elements on the Formation of Core-Shell-Structured Reinforcing Particles during Heating of Al-Ti Powder Compacts.

PubMed

Chen, Tijun; Gao, Min; Tong, Yunqi

2018-01-15

To prepare core-shell-structured Ti@compound particle (Ti@compound p ) reinforced Al matrix composite via powder thixoforming, the effects of alloying elements, such as Si, Cu, Mg, and Zn, on the reaction between Ti powders and Al melt, and the microstructure of the resulting reinforcements were investigated during heating of powder compacts at 993 K (720 °C). Simultaneously, the situations of the reinforcing particles in the corresponding semisolid compacts were also studied. Both thermodynamic analysis and experiment results all indicate that Si participated in the reaction and promoted the formation of Al-Ti-Si ternary compounds, while Cu, Mg, and Zn did not take part in the reaction and facilitated Al₃Ti phase to form to different degrees. The first-formed Al-Ti-Si ternary compound was τ1 phase, and then it gradually transformed into (Al,Si)₃Ti phase. The proportion and existing time of τ1 phase all increased as the Si content increased. In contrast, Mg had the largest, Cu had the least, and Si and Zn had an equivalent middle effect on accelerating the reaction. The thicker the reaction shell was, the larger the stress generated in the shell was, and thus the looser the shell microstructure was. The stress generated in (Al,Si)₃Ti phase was larger than that in τ1 phase, but smaller than that in Al₃Ti phase. So, the shells in the Al-Ti-Si system were more compact than those in the other systems, and Si element was beneficial to obtain thick and compact compound shells. Most of the above results were consistent to those in the semisolid state ones except the product phase constituents in the Al-Ti-Mg system and the reaction rate in the Al-Ti-Zn system. More importantly, the desirable core-shell structured Ti@compound p was only achieved in the semisolid Al-Ti-Si system.

Aluminum silicide microparticles transformed from aluminum thin films by hypoeutectic interdiffusion

PubMed Central

2014-01-01

Aluminum silicide microparticles with oxidized rough surfaces were formed on Si substrates through a spontaneous granulation process of Al films. This microparticle formation was caused by interdiffusion of Al and Si atoms at hypoeutectic temperatures of Al-Si systems, which was driven by compressive stress stored in Al films. The size, density, and the composition of the microparticles could be controlled by adjusting the annealing temperature, time, and the film thickness. High-density microparticles of a size around 10 μm and with an atomic ratio of Si/Al of approximately 0.8 were obtained when a 90-nm-thick Al film on Si substrate was annealed for 9 h at 550°C. The microparticle formation resulted in a rapid increase of the sheet resistance, which is a consequence of substantial consumption of Al film. This simple route to size- and composition-controllable microparticle formation may lay a foundation stone for the thermoelectric study on Al-Si alloy-based heterogeneous systems. PMID:24994964

Aluminum silicide microparticles transformed from aluminum thin films by hypoeutectic interdiffusion.

PubMed

Noh, Jin-Seo

2014-01-01

Aluminum silicide microparticles with oxidized rough surfaces were formed on Si substrates through a spontaneous granulation process of Al films. This microparticle formation was caused by interdiffusion of Al and Si atoms at hypoeutectic temperatures of Al-Si systems, which was driven by compressive stress stored in Al films. The size, density, and the composition of the microparticles could be controlled by adjusting the annealing temperature, time, and the film thickness. High-density microparticles of a size around 10 μm and with an atomic ratio of Si/Al of approximately 0.8 were obtained when a 90-nm-thick Al film on Si substrate was annealed for 9 h at 550°C. The microparticle formation resulted in a rapid increase of the sheet resistance, which is a consequence of substantial consumption of Al film. This simple route to size- and composition-controllable microparticle formation may lay a foundation stone for the thermoelectric study on Al-Si alloy-based heterogeneous systems.

Characteristics of the aluminum alloy sheets for forming and application examples

NASA Astrophysics Data System (ADS)

Uema, Naoyuki; Asano, Mineo

2013-12-01

In this paper, the characteristics and application examples of aluminum alloy sheets developed for automotive parts by Sumitomo Light Metal are described. For the automotive closure panels (ex., hood, back-door), an Al-Mg-Si alloy sheet having an excellent hemming performance was developed. The cause of the occurrence and the propagation of cracks by bending were considered to be the combined effect of the shear bands formed across several crystal grains and the micro-voids formed around the second phase particles. By reducing the shear band formation during bending by controlling the crystallographic texture, the Al-Mg-Si alloy sheets showed an excellent hemming performance. For the automotive outer panels (ex., roof, fender, trunk-lid), an Al-Mg alloy sheet, which has both a good hot blow formability and excellent surface appearance after hot blow forming was developed, and hot blow forming technology was put to practical use using this developed Al-Mg alloy sheet. For automotive heat insulators, a high ductile Al-Fe alloy sheet was developed. The heat insulator, which integrated several panels, was put into practical use using this developed Al-Fe alloy sheet. The textured sheet was often used as a heat insulator in order to reduce the thickness of the aluminum alloy sheet and obtain good press formability. The new textured sheet, which has both high rigidity and good press formability for heat insulators, was developed by FE analysis.

Development of an iral coated SiC-C functionally gradient composite for oxidation protection of graphite and carbon-carbon composites. Final report, 15 July 1992-14 July 1995

DOE Office of Scientific and Technical Information (OSTI.GOV)

Richards, M.R.; Richards, A.C.; Ohuchi, F.S.

1995-10-27

This report is the final summary for AFOSR project number F49620-92-J-0367. The purpose of this research was to evaluate the oxidation protection afforded to graphite or C/C composites by combining IrAl with SiC-C functionally gradient coatings FGCs. This project involved the design and construction of a novel cold wall levitation chemical vapor deposition (LCVD) reactor capable of producing continuous FGCs, and the modification of an existing physical vapor deposition (PVD) system to allow for codeposition of Ir and Al. The SiC-C FGCs were produced using the SiCl4-C3H8-H2 gas system. By continuously varying the Si to C ratio in the gasmore » stream the composition of the coatings could be precisely controlled and tailored to fit a predetermined compositional profile. IrAl was deposited onto the SiC-C FGC by alternately depositing layers of Ir and Al and reacting them at 700 deg C, in vacuum, to form IrAl. Analysis of the as reacted film indicated that IrAl had indeed formed, however, a secondary reaction had occurred between the Ir and SiC producing IrSi3 and graphite. Cracking of the IrAl coating was also observed and was attributed to the CTE mismatch between SiC and the IrAl coating. Upon exposure to a high temperature oxidizing flame (<2100 deg C for 5 min.), the IrAl formed a protective layer of alumina, however, the extensive cracking of the IrAl layer allowed the SiC-C FGC layer to oxidize.« less

Effect of SiC addition to the characteristics of Al-11Zn-6.7Mg composite produced by squeeze casting for ballistic application

NASA Astrophysics Data System (ADS)

Adiputra, R. F.; Wijanarko, R.; Angela, I.; Sofyan, B. T.

2018-01-01

Aluminium composite material as an alternative to steel used in body of tactical vehicles has been studied. Addition of SiC was expected to have strengthening effect on the composite matrix therefore improving its ballistic performance. Composites of Al-11Zn-6.7Mg matrix and SiC strengthening particles with the fraction of 0, 10, and 15 vol. % were fabricated through squeeze casting process. Composite samples were then precipitation strengthened at 130 °C for 102 h to further improve their toughness. Final products were characterized by using chemical composition testing, optical microscopy, Scanning Electron Microscope - Energy Dispersive Spectroscopy (SEM-EDS) and quantitative metallography to calculate porosity, hardness test, impact test, and type III ballistic test in accordance with NIJ 0108.04 standard. The results showed that increase in SiC volume fraction from 0 to 10 and 15 vol. % managed to improve the hardness from 73 to 85 and 87 HRB, respectively, while on the other hand reduced the impact values from 12,278.69 to 11,290.35 and 9,924.54 J/m2. SEM-EDS observation confirmed the presence of Mg3Zn3Al2 intermetallic compound which formed during solidification and indicated the precipitation of MgZn2 precipitates during ageing. The ballistic testing demonstrated a promising result of the potential of Al-11Zn-6.7Mg composite strengthened by 15 vol. % SiC to withstand penetration of type III bullet (7.62 mm).

Time, Temperature, and Cationic Dependence of Alkali Activation of Slag: Insights from Fourier Transform Infrared Spectroscopy and Spectral Deconvolution.

PubMed

Dakhane, Akash; Madavarapu, Sateesh Babu; Marzke, Robert; Neithalath, Narayanan

2017-08-01

The use of waste/by-product materials, such as slag or fly ash, activated using alkaline agents to create binding materials for construction applications (in lieu of portland cement) is on the rise. The influence of activation parameters (SiO 2 to Na 2 O ratio or M s of the activator, Na 2 O to slag ratio or n, cation type K + or Na + ) on the process and extent of alkali activation of slag under ambient and elevated temperature curing, evaluated through spectroscopic techniques, is reported in this paper. Fourier transform infrared spectroscopy along with a Fourier self-deconvolution method is used. The major spectral band of interest lies in the wavenumber range of ∼950 cm -1 , corresponding to the antisymmetric stretching vibration of Si-O-T (T = Si or Al) bonds. The variation in the spectra with time from 6 h to 28 days is attributed to the incorporation of Al in the gel structure and the enhancement in degree of polymerization of the gel. 29 Si nuclear magnetic resonance spectroscopy is used to quantify the Al incorporation with time, which is found to be higher when Na silicate is used as the activator. The Si-O-T bond wavenumbers are also generally lower for the Na silicate activated systems.

Adsorption properties of AlN on Si(111) surface: A density functional study

NASA Astrophysics Data System (ADS)

Yuan, Yinmei; Zuo, Ran; Mao, Keke; Tang, Binlong; Zhang, Zhou; Liu, Jun; Zhong, Tingting

2018-04-01

In the process of preparing GaN on Si substrate by MOCVD, an AlN buffer layer is very important. In this study, we conducted density functional theory calculations on the adsorption of AlN molecule on Si(111)-(2 × 2) surface, with the AlN molecule located horizontally or vertically above Si(111) surface at different adsorption sites. The calculations revealed that the lowest adsorption energy was at the N-top-Al-bridge site in the horizontal configuration, with the narrowest band gap, indicating that it was the most preferential adsorption growth status of AlN. In the vertical configurations, N adatom was more reactive and convenient to form bonds with the topmost Si atoms than Al adatom. When the N-end of the AlN molecule was located downward, the hollow site was the preferred adsorption site; when the Al-end was located downward, the bridge site was the most energetically favorable. Moreover, we investigated some electronic properties such as partial density of states, electron density difference, Mulliken populations, etc., revealing the microscale mechanism for AlN adsorption on Si(111) surface and providing theoretical support for adjusting the processing parameters during AlN or GaN production.

Correlation between the electrical properties and the interfacial microstructures of TiAl-based ohmic contacts to p-type 4H-SiC

NASA Astrophysics Data System (ADS)

Tsukimoto, S.; Nitta, K.; Sakai, T.; Moriyama, M.; Murakami, Masanori

2004-05-01

In order to understand a mechanism of TiAl-based ohmic contact formation for p-type 4H-SiC, the electrical properties and microstructures of Ti/Al and Ni/Ti/Al contacts, which provided the specific contact resistances of approximately 2×10-5 Ω-cm2 and 7×10-5 Ω-cm2 after annealing at 1000°C and 800°C, respectively, were investigated using x-ray diffraction (XRD) and high-resolution transmission electron microscopy (HRTEM). Ternary Ti3SiC2 carbide layers were observed to grow on the SiC surfaces in both the Ti/Al and the Ni/Ti/Al contacts when the contacts yielded low resistance. The Ti3SiC2 carbide layers with hexagonal structures had an epitaxial orientation relationship with the 4H-SiC substrates. The (0001)-oriented terraces were observed periodically at the interfaces between the carbide layers and the SiC, and the terraces were atomically flat. We believed the Ti3SiC2 carbide layers primarily reduced the high Schottky barrier height at the contact metal/p-SiC interface down to about 0.3 eV, and, thus, low contact resistances were obtained for p-type TiAl-based ohmic contacts.

Formation of Al15Mn3Si2 Phase During Solidification of a Novel Al-12%Si-4%Cu-1.2%Mn Heat-Resistant Alloy and Its Thermal Stability

NASA Astrophysics Data System (ADS)

Suo, Xiaojing; Liao, Hengcheng; Hu, Yiyun; Dixit, Uday S.; Petrov, Pavel

2018-02-01

The formation of Al15Mn3Si2 phase in Al-12Si-4Cu-1.2Mn (wt.%) alloy during solidification was investigated by adopting CALPHAD method and microstructural observation by optical microscopy, SEM-EDS, TEM-EDS/SAD and XRD analysis; SEM fixed-point observation method was applied to evaluate its thermal stability. As-cast microstructural observation consistently demonstrates the solidification sequence of the studied alloy predicted by phase diagram calculation. Based on the phase diagram calculation, SEM-EDS, TEM-EDS/SAD and XRD analysis, as well as evidences on Al-Si-Mn-Fe compounds from the literature, the primary and eutectic Mn-rich phases with different morphologies in the studied alloy are identified to be Al15Mn3Si2 that has a body-centered cubic (BCC) structure with a lattice constant of a = 1.352 nm. SEM fixed-point observation and XRD analysis indicate that Al15Mn3Si2 phase has more excellent thermal stability at high temperature than that of CuAl2 phase and can serve as the major strengthening phase in heat-resistant aluminum alloy that has to face a high-temperature working environment. Results of tension test show that addition of Mn can improve the strength of Al-Si-Cu alloy, especially at elevated temperature.

The aluminum ordering in aluminosilicates: a dipolar 27Al NMR spectroscopy study.

PubMed

Gee, Becky A

2004-01-01

The spatial ordering of aluminum atoms in CsAl(SiO3)2 and 3Al2O3.2SiO2 was probed by 27Al dipolar solid-state NMR spectroscopy. The 27Al response to a Hahn spin-echo pulse sequence in a series of aluminum-containing model crystalline compounds demonstrates that quantitative 27Al homonuclear dipolar second moments can be obtained to within +/-20% of the theoretical values, if evaluation of the spin-echo response curve is limited to short evolution periods (2t1 < or = 0.10 ms). Additionally, selective excitation of the central transition m = 1/2 --> -1/2 is necessary in order to ensure quantitative results. Restriction of spin exchange affecting the dephasing of the magnetization may decelerate the spin-echo decay at longer evolution periods. Considering these restraints, the method was used to probe the spatial distribution of aluminum atoms among the tetrahedral sites in two aluminosilicate materials. Experimental 27Al spin-echo response data for the aluminosilicates CsAl(SiO3)2 (synthetic pollucite) and 3Al2O3.2SiO2 (mullite) are compared with theoretical data based on (I) various degrees of aluminum-oxygen-aluminum bond formation among tetrahedrally coordinated aluminum atoms (Al(T(d) )-O-Al(T(d) )) and (II) the maximum avoidance of Al(T(d) )-O-Al(T(d) ) bonding. Analysis of the second moment values and resulting echo decay responses suggests that partial suppression of spin exchange among aluminum atoms in crystallographically distinct sites may contribute to the 27Al spin echo decay in 3Al2O3.2SiO2, thus complicating quantitative analysis of the data. Silicon-29 and aluminum-27 magic angle spinning (MAS) NMR spectra of 3Al2O3.2SiO2 are consistent with those previously reported. The experimental 27Al spin-echo response behavior of CsAl(SiO3)2 differs from the theoretical response behavior based on the maximum avoidance of Al-O-Al bonding between tetrahedral aluminum sites in CsAl(SiO3)2. A single unresolved resonance is observed in both the silicon-29 and aluminum-27 MAS spectra of CsAl(SiO3)2. Copyright 2003 John Wiley & Sons, Ltd.

Influence of Mg on Grain Refinement of Near Eutectic Al-Si Alloys

NASA Astrophysics Data System (ADS)

Ravi, K. R.; Manivannan, S.; Phanikumar, G.; Murty, B. S.; Sundarraj, Suresh

2011-07-01

Although the grain-refinement practice is well established for wrought Al alloys, in the case of foundry alloys such as near eutectic Al-Si alloys, the underlying mechanisms and the use of grain refiners need better understanding. Conventional grain refiners such as Al-5Ti-1B are not effective in grain refining the Al-Si alloys due to the poisoning effect of Si. In this work, we report the results of a newly developed grain refiner, which can effectively grain refine as well as modify eutectic and primary Si in near eutectic Al-Si alloys. Among the material choices, the grain refining response with Al-1Ti-3B master alloy is found to be superior compared to the conventional Al-5Ti-1B master alloy. It was also found that magnesium additions of 0.2 wt pct along with the Al-1Ti-3B master alloy further enhance the near eutectic Al-Si alloy's grain refining efficiency, thus leading to improved bulk mechanical properties. We have found that magnesium essentially scavenges the oxygen present on the surface of nucleant particles, improves wettability, and reduces the agglomeration tendency of boride particles, thereby enhancing grain refining efficiency. It allows the nucleant particles to act as potent and active nucleation sites even at levels as low as 0.2 pct in the Al-1Ti-3B master alloy.

Toxicity Determinations for Five Energetic Materials, Weathered and Aged in Soil, to the Collembolan Folsomia Candida

DTIC Science & Technology

2015-03-01

polypropylene ...ai n in g A C N - E x tr ac ta b le (F in al /I n it ia l) In it ia l A n al y si s2 (m g /k g ) F in al A n al y si s3 (m g /k g...R em ai n in g A C N - E x tr ac ta b le (F in al /I n it ia l) In it ia l A n al y si s2 (m g /k g ) F in al A n al y si s3 (m g /k

Wettability of MnxSiyOz by Liquid Zn-Al Alloys

NASA Astrophysics Data System (ADS)

Kim, Yunkyum; Shin, Minsoo; Tang, Chengying; Lee, Joonho

2010-08-01

The wettability of MnxSiyOz by liquid Zn-Al alloys was investigated to obtain basic information on the coating properties of high-strength steels with surface oxides in the hot-dip galvanizing process. In this study, the contact angles of liquid Zn-Al alloys (Al concentrations were 0.12 and 0.23 wt pct) on four different MnxSiyOz oxides, namely MnO, MnSiO3, Mn2SiO4, and SiO2, were measured with the dispensed drop method. The contact angle did not change across time. With an increasing Al concentration, the contact angle was slightly decreased for MnO and Mn2SiO4, but there was no change for MnSiO3 and SiO2. With an increasing SiO2 content, the contact angle gradually increased by 54 wt pct to form MnSiO3, and for pure SiO2 substrate, the contact angle decreased again. Consequently, the MnSiO3 substrate showed the worst wettability among the four tested oxide substrates.

Joining of aluminum and stainless steel using AlSi10 brazing filler: Microstructure and mechanical properties

NASA Astrophysics Data System (ADS)

Fedorov, Vasilii; Uhlig, Thomas; Wagner, Guntram

2017-07-01

Joining of dissimilar materials like stainless steel and aluminum is of special interest for automotive applications. Due to the different properties of these materials, suitable joining techniques are required. Brazing offers the possibilities to manufacture high performance joints in one step and at low joining temperatures. However, these joints often need to withstand a high number of high cyclic loads during application. Therefore, in addition to the monotonic properties, the fatigue behavior of the produced joints must be considered and evaluated. In the present work, specimens are manufactured by induction brazing using an AlSi10 filler and a non-corrosive flux. The mechanical properties are determined by tensile shear tests as well as in fatigue tests at ambient and elevated temperatures. The microstructure of the brazed joints and the fracture surfaces of the tested samples are investigated by SEM.

Measurement and Analysis of Porosity in Al-10Si-1Mg Components Additively Manufactured by Selective Laser Melting

DOE Office of Scientific and Technical Information (OSTI.GOV)

Rao, Suraj; Cunningham, Ross; Ozturk, Tugce

Aluminum alloys are candidate materials for weight critical applications because of their excellent strength and stiffness to weight ratio. However, defects such as voids decrease the strength and fatigue life of these alloys, which can limit the application of Selective Laser Melting. In this study, the average volume fraction, average size, and size distribution of pores in Al10-Si-1Mg samples built using Selective Laser Melting have been characterized. Synchrotron high energy X-rays were used to perform computed tomography on volumes of order one cubic millimeter with a resolution of approximately 1.5 μm. Substantial variations in the pore size distributions were foundmore » as a function of process conditions. Even under conditions that ensured that all locations were melted at least once, a significant number density was found of pores above 5 μm in diameter.« less

Effect of Cold Forging on Microstructure and MechanicalProperties of Al/SiC Composites

NASA Astrophysics Data System (ADS)

Hanamantraygouda, M. B.; Shivakumar, B. P., Dr; Siddappa, P. N.; Sampathkumar, L.; Prashanth, L.

2018-02-01

The objective of this work was to investigate the effect of cold forging on mechanical properties and microstructural study of Al MMCs, at different wt% of SiC and forging cycle. The Al-SiC composite material was fabricated by stir casting method at different weight percentage of SiC such as 2.5, 5, 7.5 and 10%. Further, the deformation characteristics during open-die forging of Al-SiC composite at cold conditions was investigated. Cast and forged composite material was subjected to hardness test, tensile test and impact test. The grain size, microstructure behaviour was investigated using optical microscope. The results show that hardness and strength of Al-SiC composite increases and ductility decreases as compared to Al alloy in both as-cast and forged conditions. Optical microscope images showed that the distribution of SiC in Al matrix was more homogeneous in a forged composite as compared to cast one and reduction of porosity was found. Further, it showed that due to forging cycle the grain size was reduced by 30% to 35% from initial size.

SiAlON ceramic compositions and methods of fabrication

DOEpatents

O'Brien, M.H.; Park, B.H.

1994-05-31

A method of fabricating a SiAlON ceramic body includes: (a) combining quantities of Si[sub 3]N[sub 4], Al[sub 2]O[sub 3] and CeO[sub 2] to produce a mixture; (b) forming the mixture into a desired body shape; (c) heating the body to a densification temperature of from about 1,550 C to about 1,850 C; (d) maintaining the body at the densification temperature for a period of time effective to densify the body; (e) cooling the densified body to a devitrification temperature of from about 1,200 C to about 1,400 C; and (f) maintaining the densified body at the devitrification temperature for a period of time effective to produce a [beta][prime]-SiAlON crystalline phase in the body having elemental or compound form Ce incorporated in the [beta][prime]-SiAlON crystalline phase. Further, a SiAlON ceramic body comprises: (a) an amorphous phase; and (b) a crystalline phase, the crystalline phase comprising [beta][prime]-SiAlON having lattice substituted elemental or compound form Ce.

Micro-structural characterization of the hydration products of bauxite-calcination-method red mud-coal gangue based cementitious materials.

PubMed

Liu, Xiaoming; Zhang, Na; Yao, Yuan; Sun, Henghu; Feng, Huan

2013-11-15

In this research, the micro-structural characterization of the hydration products of red mud-coal gangue based cementitious materials has been investigated through SEM-EDS, (27)Al MAS NMR and (29)Si MAS NMR techniques, in which the used red mud was derived from the bauxite calcination method. The results show that the red mud-coal gangue based cementitious materials mainly form fibrous C-A-S-H gel, needle-shaped/rod-like AFt in the early hydration period. With increasing of the hydration period, densification of the pastes were promoted resulting in the development of strength. EDS analysis shows that with the Ca/Si of red mud-coal gangue based cementitious materials increases, the average Ca/Si and Ca/(Si+Al) atomic ratio of C-A-S-H gel increases, while the average Al/Si atomic ratio of C-A-S-H gel decreases. MAS NMR analysis reveals that Al in the hydration products of red mud-coal gangue based cementitious materials exists in the forms of Al(IV) and Al(VI), but mainly in the form of Al(VI). Increasing the Ca/Si ratio of raw material promotes the conversion of [AlO4] to [AlO6] and inhibits the combination between [AlO4] and [SiO4] to form C-A-S-H gel. Meanwhile, the polymerization degree of [SiO4] in the hydration products declines. Published by Elsevier B.V.

Structural and thermal properties of inorganic-organic montmorillonite: Implications for their potential environmental applications.

PubMed

Rathnayake, Suramya I; Xi, Yunfei; Frost, Ray L; Ayoko, Godwin A

2015-12-01

Inorganic-organic clays (IOCs), clays intercalated with both organic cations such as cationic surfactants and inorganic cations such as metal hydroxy polycations have the properties of both organic and pillared clays, and thereby the ability to remove both inorganic and organic contaminants from water simultaneously. In this study, IOCs were synthesised using three different methods with different surfactant concentrations. Octadecyltrimethylammonium bromide (ODTMA) and hydroxy aluminium ([Al13O4(OH)24(H2O)12](7+) or Al13) are used as the organic and inorganic modifiers (intercalation agents). According to the results, the interlayer distance, the surfactant loading amount and the Al/Si ratio of IOCs strictly depend on the intercalation method and the intercalation agent ratio. Interlayers of IOCs synthesised by intercalating ODTMA before Al13 and IOCs synthesised by simultaneous intercalation of ODTMA and Al13 were increased with increasing the ODTMA concentration used in the synthesis procedure and comparatively high loading amounts could be observed in them. In contrast, Al/Si decreased with increasing ODTMA concentration in these two types of IOCs. The results suggest that Al-pillars can be fixed within the interlayers by calcination and any increment in the amount of ODTMA used in the synthesis procedure did not affect the interlayer distance of the IOCs. Overall the study provides valuable insights into the structure and properties of the IOCs and their potential environmental applications. Copyright © 2015 Elsevier Inc. All rights reserved.

Thermal Atomic Layer Etching of SiO2 by a "Conversion-Etch" Mechanism Using Sequential Reactions of Trimethylaluminum and Hydrogen Fluoride.

PubMed

DuMont, Jaime W; Marquardt, Amy E; Cano, Austin M; George, Steven M

2017-03-22

The thermal atomic layer etching (ALE) of SiO 2 was performed using sequential reactions of trimethylaluminum (TMA) and hydrogen fluoride (HF) at 300 °C. Ex situ X-ray reflectivity (XRR) measurements revealed that the etch rate during SiO 2 ALE was dependent on reactant pressure. SiO 2 etch rates of 0.027, 0.15, 0.20, and 0.31 Å/cycle were observed at static reactant pressures of 0.1, 0.5, 1.0, and 4.0 Torr, respectively. Ex situ spectroscopic ellipsometry (SE) measurements were in agreement with these etch rates versus reactant pressure. In situ Fourier transform infrared (FTIR) spectroscopy investigations also observed SiO 2 etching that was dependent on the static reactant pressures. The FTIR studies showed that the TMA and HF reactions displayed self-limiting behavior at the various reactant pressures. In addition, the FTIR spectra revealed that an Al 2 O 3 /aluminosilicate intermediate was present after the TMA exposures. The Al 2 O 3 /aluminosilicate intermediate is consistent with a "conversion-etch" mechanism where SiO 2 is converted by TMA to Al 2 O 3 , aluminosilicates, and reduced silicon species following a family of reactions represented by 3SiO 2 + 4Al(CH 3 ) 3 → 2Al 2 O 3 + 3Si(CH 3 ) 4 . Ex situ X-ray photoelectron spectroscopy (XPS) studies confirmed the reduction of silicon species after TMA exposures. Following the conversion reactions, HF can fluorinate the Al 2 O 3 and aluminosilicates to species such as AlF 3 and SiO x F y . Subsequently, TMA can remove the AlF 3 and SiO x F y species by ligand-exchange transmetalation reactions and then convert additional SiO 2 to Al 2 O 3 . The pressure-dependent conversion reaction of SiO 2 to Al 2 O 3 and aluminosilicates by TMA is critical for thermal SiO 2 ALE. The "conversion-etch" mechanism may also provide pathways for additional materials to be etched using thermal ALE.

Fabrication of Spherical AlSi10Mg Powders by Radio Frequency Plasma Spheroidization

NASA Astrophysics Data System (ADS)

Wang, Linzhi; Liu, Ying; Chang, Sen

2016-05-01

Spherical AlSi10Mg powders were prepared by radio frequency plasma spheroidization from commercial AlSi10Mg powders. The fabrication process parameters and powder characteristics were investigated. Field emission scanning electron microscope, X-ray diffraction, laser particle size analyzer, powder rheometer, and UV/visible/infrared spectrophotometer were used for analyses and measurements of micrographs, phases, granulometric parameters, flowability, and laser absorption properties of the powders, respectively. The results show that the obtained spherical powders exhibit good sphericity, smooth surfaces, favorable dispersity, and excellent fluidity under appropriate feeding rate and flow rate of carrier gas. Further, acicular microstructures of the spherical AlSi10Mg powders are composed of α-Al, Si, and a small amount of Mg2Si phase. In addition, laser absorption values of the spherical AlSi10Mg powders increase obviously compared with raw material, and different spectra have obvious absorption peaks at a wavelength of about 826 nm.

Fixed interface charges between AlGaN barrier and gate stack composed of in situ grown SiN and Al{sub 2}O{sub 3} in AlGaN/GaN high electron mobility transistors with normally off capability

DOE Office of Scientific and Technical Information (OSTI.GOV)

Capriotti, M., E-mail: mattia.capriotti@tuwien.ac.at; Alexewicz, A.; Fleury, C.

2014-03-17

Using a generalized extraction method, the fixed charge density N{sub int} at the interface between in situ deposited SiN and 5 nm thick AlGaN barrier is evaluated by measurements of threshold voltage V{sub th} of an AlGaN/GaN metal insulator semiconductor high electron mobility transistor as a function of SiN thickness. The thickness of the originally deposited 50 nm thick SiN layer is reduced by dry etching. The extracted N{sub int} is in the order of the AlGaN polarization charge density. The total removal of the in situ SiN cap leads to a complete depletion of the channel region resulting in V{sub th} = +1 V.more » Fabrication of a gate stack with Al{sub 2}O{sub 3} as a second cap layer, deposited on top of the in situ SiN, is not introducing additional fixed charges at the SiN/Al{sub 2}O{sub 3} interface.« less

Precipitate statistics in an Al-Mg-Si-Cu alloy from scanning precession electron diffraction data

NASA Astrophysics Data System (ADS)

Sunde, J. K.; Paulsen, Ø.; Wenner, S.; Holmestad, R.

2017-09-01

The key microstructural feature providing strength to age-hardenable Al alloys is nanoscale precipitates. Alloy development requires a reliable statistical assessment of these precipitates, in order to link the microstructure with material properties. Here, it is demonstrated that scanning precession electron diffraction combined with computational analysis enable the semi-automated extraction of precipitate statistics in an Al-Mg-Si-Cu alloy. Among the main findings is the precipitate number density, which agrees well with a conventional method based on manual counting and measurements. By virtue of its data analysis objectivity, our methodology is therefore seen as an advantageous alternative to existing routines, offering reproducibility and efficiency in alloy statistics. Additional results include improved qualitative information on phase distributions. The developed procedure is generic and applicable to any material containing nanoscale precipitates.

Influence of Low-Frequency Vibration and Modification on Solidification and Mechanical Properties of Al-Si Casting Alloy.

PubMed

Selivorstov, Vadim; Dotsenko, Yuri; Borodianskiy, Konstantin

2017-05-20

One of the major aims of the modern materials foundry industry is the achievement of advanced mechanical properties of metals, especially of light non-ferrous alloys such as aluminum. Usually an alloying process is applied to obtain the required properties of aluminum alloys. However, the presented work describes an alternative approach through the application of vibration treatment, modification by ultrafine powder and a combination of these two methods. Microstructural studies followed by image analysis revealed the refinement of α-Al grains with an increase in the Si network area around them. As evidence, the improvement of the mechanical properties of Al casting alloy was detected. It was found that the alloys subjected to the vibration treatment displayed an increase in tensile and yield strengths by 20% and 10%, respectively.

Influence of Low-Frequency Vibration and Modification on Solidification and Mechanical Properties of Al-Si Casting Alloy

PubMed Central

Selivorstov, Vadim; Dotsenko, Yuri; Borodianskiy, Konstantin

2017-01-01

One of the major aims of the modern materials foundry industry is the achievement of advanced mechanical properties of metals, especially of light non-ferrous alloys such as aluminum. Usually an alloying process is applied to obtain the required properties of aluminum alloys. However, the presented work describes an alternative approach through the application of vibration treatment, modification by ultrafine powder and a combination of these two methods. Microstructural studies followed by image analysis revealed the refinement of α-Al grains with an increase in the Si network area around them. As evidence, the improvement of the mechanical properties of Al casting alloy was detected. It was found that the alloys subjected to the vibration treatment displayed an increase in tensile and yield strengths by 20% and 10%, respectively. PMID:28772922

Time-Resolved Photoluminescence Studies of Si-doped AlGaN alloys

NASA Astrophysics Data System (ADS)

Nam, K. B.; Li, J.; Nakarmi, M. L.; Lin, J. Y.; Jiang, H. X.

2002-03-01

Si-doped n-type Al x Ga_1-x N alloys with x between 0.3 and 0.5 were grown by metal-organic chemical vapor deposition (MOCVD) on sapphire substrates. Time-resolved photoluminescence (PL) emission spectroscopy and variable temperature Hall-effect measurements were employed to study the optical and electrical properties of these epilayers. Our electrical data revealed that the conductivity of Si-doped Al x Ga_1-x N alloys (x > 0.4) increases with an increase of the Si doping concentration (N_Si) for a fixed x value and exhibits a sharp increase around N_Si= 1x10 ^18cm-3, suggesting the existence of a critical Si doping concentration needed to convert insulating Al x Ga_1-x N alloys (x > 0.4) to n-type conductivity. Time-resolved PL studies also showed that PL decay lifetime and activation energy decrease sharply when Si-doping concentration increases from N_Si= 0 to 1x10 ^18cm-3and then followed by gradual decreases as N_Si further increases. Our results thus suggest that Si-doping reduces the effect of carrier localization in Al x Ga_1-x N alloys and a sharp drop in carrier localization energy occurs at N_Si= 1x10 ^18cm-3, which is the critical Si-doping concentration needed to fill up the localized states in Al x Ga_1-x N alloys (x > 0.4). The implications of these results to UV optoelectronic devices are also discussed.

Influence of LaSiOx passivation interlayer on band alignment between PEALD-Al2O3 and 4H-SiC determined by X-ray photoelectron spectroscopy

NASA Astrophysics Data System (ADS)

Wang, Qian; Cheng, Xinhong; Zheng, Li; Shen, Lingyan; Zhang, Dongliang; Gu, Ziyue; Qian, Ru; Cao, Duo; Yu, Yuehui

2018-01-01

The influence of lanthanum silicate (LaSiOx) passivation interlayer on the band alignment between plasma enhanced atomic layer deposition (PEALD)-Al2O3 films and 4H-SiC was investigated by high resolution X-ray photoelectron spectroscopy (XPS). An ultrathin in situ LaSiOx interfacial passivation layer (IPL) was introduced between the Al2O3 gate dielectric and the 4H-SiC substrate to enhance the interfacial characteristics. The valence band offset (VBO) and corresponding conduction band offset (CBO) for the Al2O3/4H-SiC interface without any passivation were extracted to be 2.16 eV and 1.49 eV, respectively. With a LaSiOx IPL, a VBO of 1.79 eV and a CBO of 1.86 eV could be obtained across the Al2O3/4H-SiC interface. The difference in the band alignments was dominated by the band bending or band shift in the 4H-SiC substrate as a result of different interfacial layers (ILs) formed at the interface. This understanding of the physical details of the band alignment could be a good foundation for Al2O3/LaSiOx/4H-SiC heterojunctions applied in the 4H-SiC metal-oxide-semiconductor field effect transistors (MOSFETs).

Ab initio computational study on the lattice thermal conductivity of Zintl clathrates [Si19P4] Cl4 and Na4[Al4Si19

NASA Astrophysics Data System (ADS)

Härkönen, Ville J.; Karttunen, Antti J.

2016-08-01

The lattice thermal conductivity of silicon clathrate framework Si23 and two Zintl clathrates, [Si19P4] Cl4 and Na4[Al4Si19] , is investigated by using an iterative solution of the linearized Boltzmann transport equation in conjunction with ab initio lattice dynamical techniques. At 300 K, the lattice thermal conductivities for Si23, [Si19P4] Cl4 , and Na4[Al4Si19] were found to be 43 W/(m K), 25 W/(m K), and 2 W/(m K), respectively. In the case of Na4[Al4Si19] , the order-of-magnitude reduction in the lattice thermal conductivity was found to be mostly due to relaxation times and group velocities differing from Si23 and [Si19P4] Cl4 . The difference in the relaxation times and group velocities arises primarily due to the phonon spectrum at low frequencies, resulting eventually from the differences in the second-order interatomic force constants (IFCs). The obtained third-order IFCs were rather similar for all materials considered here. The present findings are similar to those obtained earlier for some skutterudites. The predicted lattice thermal conductivity of Na4[Al4Si19] is in line with the experimentally measured thermal conductivity of recently synthesized type-I Zintl clathrate Na8[Al8Si38] (polycrystalline samples).

Behavior of Al2O3 and SiO2 with heating in a Cl2 + CO stream

NASA Technical Reports Server (NTRS)

Shchetinin, L. K.

1984-01-01

Differential thermal analysis (DTA) and Thermogravimetric analysis (TGA) were used to study the chlorination of alpha-Al2O3, gamma-Al2O3 and amorphous SiO2 in a Cl + CO stream, for the preparation of AlCl3 and SiCl4. The chlorination starting temperatures were 235 deg for Al2O3 and 680 deg for SiO2. The chlorination of alpha- and gamma-Al2O3 takes place via the formation of AlOCl as an intermediate product, and its subsequent dissociation at 480 to 560 deg, according to 3AlOCl yields AlCl3 + Al2O3. The chlorination activation energies are given for the three oxides.

A computational study on the electronic and field emission properties of Mg and Si doped AlN nanocones

NASA Astrophysics Data System (ADS)

Saedi, Leila; Soleymanabadi, Hamed; Panahyab, Ataollah

2018-05-01

Following an experimental work, we explored the effect of replacing an Al atom of an AlN nanocone by Si or Mg atom on its electronic and field emission properties using density functional theory calculations. We found that both Si-doping and Mg-doping increase the electrical conductivity of AlN nanocone, but their influences on the filed emission properties are significantly different. The Si-doping increases the electron concentration of AlN nanocone and results in a large electron mobility and a low work function, whereas Mg-doping leads to a high hole concentration below the conduction level and increases the work function in agreement with the experimental results. It is predicted that Si-doped AlN nanocones show excellent filed emission performance with higher emitted electron current density compared to the pristine AlN nanocone. But the Mg-doping meaningfully decreases the emitted electron current density from the surface of AlN nanocone. The Mg-doping can increase the work function about 41.9% and the Si-doping can decrease it about 6.3%. The Mg-doping and Si-doping convert the AlN nanocone to a p-type and n-type semiconductors, respectively. Our results explain in a molecular level what observed in the experiment.

High performance GaN-based LEDs on patterned sapphire substrate with patterned composite SiO2/Al2O3 passivation layers and TiO2/Al2O3 DBR backside reflector.

PubMed

Guo, Hao; Zhang, Xiong; Chen, Hongjun; Zhang, Peiyuan; Liu, Honggang; Chang, Hudong; Zhao, Wei; Liao, Qinghua; Cui, Yiping

2013-09-09

GaN-based light-emitting diodes (LEDs) on patterned sapphire substrate (PSS) with patterned composite SiO(2)/Al(2)O(3) passivation layers and TiO(2)/Al(2)O(3) distributed Bragg reflector (DBR) backside reflector have been proposed and fabricated. Highly passivated Al(2)O(3) layer deposited on indium tin oxide (ITO) layer with excellent uniformity and quality has been achieved with atomic layer deposition (ALD) technology. With a 60 mA current injection, an enhancement of 21.6%, 59.7%, and 63.4% in the light output power (LOP) at 460 nm wavelength was realized for the LED with the patterned composite SiO(2)/Al(2)O(3) passivation layers, the LED with the patterned composite SiO(2)/Al(2)O(3) passivation layers and Ag mirror + 3-pair TiO(2)/SiO(2) DBR backside reflector, and the LED with the patterned composite SiO(2)/Al(2)O(3) passivation layer and Ag mirror + 3-pair ALD-grown TiO(2)/Al(2)O(3) DBR backside reflector as compared with the conventional LED only with a single SiO(2) passivation layer, respectively.

Effect of mechanical treatment on intergranular corrosion of 6064 alloy bars

NASA Astrophysics Data System (ADS)

Sláma, P.; Nacházel, J.

2017-02-01

Aluminium Al-Mg-Si-type alloys (6xxx-series) exhibit good mechanical properties, formability, weldability and good corrosion resistance in various environments. They often find use in automotive industry and other applications. Some alloys, however, particularly those with higher copper levels, show increased susceptibility to intergranular corrosion. Intergranular corrosion (IGC) is typically related to the formation of microgalvanic cells between cathodic, more noble phases and depleted (precipitate-free) zones along grain boundaries. It is encountered mainly in AlMgSi alloys containing Cu, where it is thought to be related to the formation Q-phase precipitates (Al4Mg8Si7Cu2) along grain boundaries. The present paper describes the effects of mechanical working (extrusion, drawing and straightening) and artificial aging on intergranular corrosion in rods of the 6064 alloy. The resistance to intergranular corrosion was mapped using corrosion tests according to EN ISO 11846, method B. Corrosion tests showed dependence of corrosion type on mechanical processing of the material. Intergranular, pitting and transgranular corrosion was observed. Artificial ageing influenced mainly the depth of the corrosion.

Wear study of Al-SiC metal matrix composites processed through microwave energy

NASA Astrophysics Data System (ADS)

Honnaiah, C.; Srinath, M. S.; Prasad, S. L. Ajit

2018-04-01

Particulate reinforced metal matrix composites are finding wider acceptance in many industrial applications due to their isotropic properties and ease of manufacture. Uniform distribution of reinforcement particulates and good bonding between matrix and reinforcement phases are essential features in order to obtain metal matrix composites with improved properties. Conventional powder metallurgy technique can successfully overcome the limitation of stir casting techniques, but it is time consuming and not cost effective. Use of microwave technology for processing particulate reinforced metal matrix composites through powder metallurgy technique is being increasingly explored in recent times because of its cost effectiveness and speed of processing. The present work is an attempt to process Al-SiC metal matrix composites using microwaves irradiated at 2.45 GHz frequency and 900 W power for 10 minutes. Further, dry sliding wear studies were conducted at different loads at constant velocity of 2 m/s for various sliding distances using pin-on-disc equipment. Analysis of the obtained results show that the microwave processed Al-SiC composite material shows around 34 % of resistance to wear than the aluminium alloy.

Deposition Mechanism and Microstructure of Laser-Assisted Cold-Sprayed (LACS) Al-12 wt.%Si Coatings: Effects of Laser Power

NASA Astrophysics Data System (ADS)

Olakanmi, E. O.; Tlotleng, M.; Meacock, C.; Pityana, S.; Doyoyo, M.

2013-06-01

Surface treatment is one of the most costly processes for treating metallic components against corrosion. Laser-assisted cold spray (LACS) has an opportunity to decrease those costs particularly in transportation systems, chemical industries, and renewable energy systems. This article highlights some of those potential applications. In the LACS process, a laser beam irradiates the substrate and the particles, thereby softening both of them. Consequently, the particles deform upon impact at the substrate and build up a coating. To circumvent the processing problems associated with cold-spray (CS) deposition of low-temperature, corrosion-resistant Al-12 wt.%Si coatings, a preliminary investigation detailing the effect of laser power on its LACS deposition mechanism and microstructural properties is presented. The deposition efficiency, the microstructure, and the microhardness of the LACS-deposited coatings produced by a 4.4-kW Nd:YAG laser system were evaluated. The outcome of this study shows that pore- and crack-free Al-12 wt.%Si coatings were deposited via softening by laser irradiation and adiabatic shearing phenomena at an optimum laser power of 2.5 kW.

Thermal conductance at atomically clean and disordered silicon/aluminum interfaces: A molecular dynamics simulation study

NASA Astrophysics Data System (ADS)

Ih Choi, Woon; Kim, Kwiseon; Narumanchi, Sreekant

2012-09-01

Thermal resistance between layers impedes effective heat dissipation in electronics packaging applications. Thermal conductance for clean and disordered interfaces between silicon (Si) and aluminum (Al) was computed using realistic Si/Al interfaces and classical molecular dynamics with the modified embedded atom method potential. These realistic interfaces, which include atomically clean as well as disordered interfaces, were obtained using density functional theory. At 300 K, the magnitude of interfacial conductance due to phonon-phonon scattering obtained from the classical molecular dynamics simulations was approximately five times higher than the conductance obtained using analytical elastic diffuse mismatch models. Interfacial disorder reduced the thermal conductance due to increased phonon scattering with respect to the atomically clean interface. Also, the interfacial conductance, due to electron-phonon scattering at the interface, was greater than the conductance due to phonon-phonon scattering. This indicates that phonon-phonon scattering is the bottleneck for interfacial transport at the semiconductor/metal interfaces. The molecular dynamics modeling predictions for interfacial thermal conductance for a 5-nm disordered interface between Si/Al were in-line with recent experimental data in the literature.

A density functional theory investigation on amantadine drug interaction with pristine and B, Al, Si, Ga, Ge doped C60 fullerenes

NASA Astrophysics Data System (ADS)

Parlak, Cemal; Alver, Özgür

2017-06-01

Amantadine is a well-known drug for its treatment effect on Parkinson's disease and influenza infection or hepatitis. Heteroatom doped fullerenes have been extensively examined for their possible usage in sensor technology and medical applications as drug delivery vehicles. In this research, pristine and B, Al, Si, Ga, Ge doped C60 fullerenes and their interaction with amantadine drug molecule were investigated based on the density functional theory calculations. Findings suggest that doped C60 fullerenes might be used to detect the presence of amantadine and they might be used as drug delivery vehicles because of their moderately high adsorption energies with amantadine.

Determination of silicon in biological and botanical reference materials by epithermal INAA and Compton suppression

NASA Astrophysics Data System (ADS)

Landsberger, S.; Peshev, S.; Becker, D. A.

1994-12-01

Silicon determination in sixteen botanical and biological standard reference materials is described using the 29Si(n, p) 29Al reaction through instrumental epithermal neutron activation analysis and Compton suppression gamma-ray spectroscopy. By simultaneous utilization of both cadmium and boron epithermal filters along with anticoincidence gamma-counting, detection limits as low as 12 ppm were obtained for certain matrices, much lower than previously reported values for this type of analysis. The method is applicable to many botanical and biological matrices and is attractive with its interference free, purely instrumental nature, compared with methods using the 28Si(n, p) 28Al reaction or chemical separation techniques.

The preparation and characterization of optical thin films produced by ion-assisted deposition

NASA Astrophysics Data System (ADS)

Martin, P. J.; Netterfield, R. P.; Sainty, W. G.; Pacey, C. G.

1984-06-01

Ion-based deposition techniques have been successfully used to deposit compound films suitable for photothermal applications, as well as dielectric films with stable and reproducible optical properties. Thus, thin films of TiN, a-Si:H, and PbS have been obtained by ion-assisted deposition for photothermal solar-selective elements and similarly prepared dielectric layers of ZrO2, SiO2, and Al2O3 have been used as protective coatings on Ag and Al mirrors. It is shown that the technique of ion-assisted deposition affords control over the film density, microstructure, adhesion, composition, and optical properties. Details of the process and film properties are discussed.

Microscopic potential fluctuations in Si-doped AlGaN epitaxial layers with various AlN molar fractions and Si concentrations

DOE Office of Scientific and Technical Information (OSTI.GOV)

Kurai, Satoshi, E-mail: kurai@yamaguchi-u.ac.jp; Yamada, Yoichi; Miyake, Hideto

2016-01-14

Nanoscopic potential fluctuations of Si-doped AlGaN epitaxial layers with the AlN molar fraction varying from 0.42 to 0.95 and Si-doped Al{sub 0.61}Ga{sub 0.39}N epitaxial layers with Si concentrations of 3.0–37 × 10{sup 17 }cm{sup −3} were investigated by cathodoluminescence (CL) imaging combined with scanning electron microscopy. The spot CL linewidths of AlGaN epitaxial layers broadened as the AlN molar fraction was increased to 0.7, and then narrowed at higher AlN molar fractions. The experimental linewidths were compared with the theoretical prediction from the alloy broadening model. The trends displayed by our spot CL linewidths were consistent with calculated results at AlN molar fractionsmore » of less than about 0.60, but the spot CL linewidths were markedly broader than the calculated linewidths at higher AlN molar fractions. The dependence of the difference between the spot CL linewidth and calculated line broadening on AlN molar fraction was found to be similar to the dependence of reported S values, indicating that the vacancy clusters acted as the origin of additional line broadening at high AlN molar fractions. The spot CL linewidths of Al{sub 0.61}Ga{sub 0.39}N epitaxial layers with the same Al concentration and different Si concentrations were nearly constant in the entire Si concentration range tested. From the comparison of reported S values, the increase of V{sub Al} did not contribute to the linewidth broadening, unlike the case of the V{sub Al} clusters.« less

Kinetics of Valeric Acid Ketonization and Ketenization in Catalytic Pyrolysis on Nanosized SiO2 , γ-Al2 O3 , CeO2 /SiO2 , Al2 O3 /SiO2 and TiO2 /SiO2.

PubMed

Kulyk, Kostiantyn; Palianytsia, Borys; Alexander, John D; Azizova, Liana; Borysenko, Mykola; Kartel, Mykola; Larsson, Mats; Kulik, Tetiana

2017-07-19

Valeric acid is an important renewable platform chemical that can be produced efficiently from lignocellulosic biomass. Upgrading of valeric acid by catalytic pyrolysis has the potential to produce value added biofuels and chemicals on an industrial scale. Understanding the different mechanisms involved in the thermal transformations of valeric acid on the surface of nanometer-sized oxides is important for the development of efficient heterogeneously catalyzed pyrolytic conversion techniques. In this work, the thermal decomposition of valeric acid on the surface of nanoscale SiO 2 , γ-Al 2 O 3 , CeO 2 /SiO 2 , Al 2 O 3 /SiO 2 and TiO 2 /SiO 2 has been investigated by temperature-programmed desorption mass spectrometry (TPD MS). Fourier transform infrared spectroscopy (FTIR) has also been used to investigate the structure of valeric acid complexes on the oxide surfaces. Two main products of pyrolytic conversion were observed to be formed depending on the nano-catalyst used-dibutylketone and propylketene. Mechanisms of ketene and ketone formation from chemisorbed fragments of valeric acid are proposed and the kinetic parameters of the corresponding reactions were calculated. It was found that the activation energy of ketenization decreases in the order SiO 2 >γ-Al 2 O 3 >TiO 2 /SiO 2 >Al 2 O 3 /SiO 2 , and the activation energy of ketonization decreases in the order γ-Al 2 O 3 >CeO 2 /SiO 2 . Nano-oxide CeO 2 /SiO 2 was found to selectively catalyze the ketonization reaction. © 2017 Wiley-VCH Verlag GmbH & Co. KGaA, Weinheim.

Mechanical characterization of SiC particulate & E-glass fiber reinforced Al 3003 hybrid metal matrix composites

NASA Astrophysics Data System (ADS)

Narayana, K. S. Lakshmi; Shivanand, H. K.

2018-04-01

Metal matrix composites constitute a class of low cost high quality materials which offer high performance for various industrial applications. The orientation of this research is towards the study of mechanical properties of as cast silicon carbide (SiC) particulates and Short E-Glass fibers reinforced Aluminum matrix composites (AMCs). The Hybrid metal matrix composite is developed by reinforcing SiC particulates of 100 microns and short E-Glass fibers of 2-3 mm length with Al 3003 in different compositions. The vortex method of stir casting was employed, in which the reinforcements were introduced into the vortex created by the molten metal by means of mechanical stirrer. The mechanical properties of the prepared metal matrix composites were analyzed. From the studies it was noticed that an improvement in mechanical properties of the reinforced alloys compared to unreinforced alloys.

The effects of a SiO2 coating on the corrosion parameters cpTi and Ti-6Al-7Nb alloy

PubMed Central

Basiaga, Marcin; Walke, Witold; Paszenda, Zbigniew; Karasiński, Paweł; Szewczenko, Janusz

2014-01-01

The aim of this paper was to evaluate the usefulness of the sol-gel method application, to modificate the surface of the Ti6Al7Nb alloy and the cpTi titanium (Grade 4) with SiO2 oxide, applied on the vascular implants to improve their hemocompatibility. Mechanical treatment was followed by film deposition on surface of the titanium samples. An appropriate selection of the process parameters was verified in the studies of corrosion, using potentiodynamic and impedance method. A test was conducted in the solution simulating blood vessels environment, in simulated body fluid at t = 37.0 ± 1 °C and pH = 7.0 ± 0.2. Results showed varied electrochemical properties of the SiO2 film, depending on its deposition parameters. Correlations between corrosion resistance and layer adhesion to the substrate were observed, depending on annealing temperature. PMID:25482412

Preparations, Properties, and Applications of Periodic Nano Arrays using Anodized Aluminum Oxide and Di-block Copolymer

NASA Astrophysics Data System (ADS)

Noh, Kunbae

2011-12-01

Self-ordered arrangements observed in various materials systems such as anodic aluminum oxide, polystyrene nanoparticles, and block copolymer are of great interest in terms of providing new opportunities in nanofabrication field where lithographic techniques are broadly used in general. Investigations on self-assembled nano arrays to understand how to obtain periodic nano arrays in an efficient yet inexpensive way, and how to realize advanced material and device systems thereof, can lead to significant impacts on science and technology for many forefront device applications. In this thesis, various aspects of periodic nano-arrays have been discussed including novel preparations, properties and applications of anodized aluminum oxide (AAO) and PS-b-P4VP (S4VP) di-block copolymer self-assembly. First, long-range ordered AAO arrays have been demonstrated. Nanoimprint lithography (NIL) process allowed a faithful pattern transfer of the imprint mold pattern onto Al thin film, and interesting self-healing and pattern tripling phenomena were observed, which could be applicable towards fabrication of the NIL master mold having highly dense pattern over large area, useful for fabrication of a large-area substrate for predictable positioning of arrayed devices. Second, S4VP diblock copolymer self-assembly and S4VP directed AAO self-assembly have been demonstrated in the Al thin film on Si substrate. Such a novel combination of two dissimilar self-assembly techniques demonstrated a potential as a versatile tool for nanopatterning formation on a Si substrate, capable of being integrated into Si process technology. As exemplary applications, vertically aligned Ni nanowires have been synthesized into an S4VP-guided AAO membrane on a Si substrate in addition to anti-dot structured [Co/Pd]n magnetic multilayer using S4VP self assembly. Third, a highly hexagonally ordered, vertically parallel aluminum oxide nanotube array was successfully fabricated via hard anodization technique. The Al2O3 nanotube arrays so fabricated exhibit a uniform and reproducible dimension, and a quite high aspect ratio of greater than ˜1,000. Such high-aspect-ratio, mechanically robust, large-surface-area nanotube array structure can be useful for many technical applications. As a potential application in biomedical research, drug storage/controlled drug release from such AAO nanotubes was investigated, and the advantageous potential of using AAO nanotubes for biological implant surface coatings alternative to TiO2 nanotubes has been discussed.

Piezoelectric characterization of Sc0.26Al0.74N layers on Si (001) substrates

NASA Astrophysics Data System (ADS)

Sinusía Lozano, M.; Pérez-Campos, A.; Reusch, M.; Kirste, L.; Fuchs, Th; Žukauskaitė, A.; Chen, Z.; Iriarte, G. F.

2018-03-01

Scandium aluminum nitride (ScAlN) films have been synthesized by pulsed-DC reactive magnetron sputtering. The degree of c-axis orientation as well as piezoelectric characteristics of the Sc0.26Al0.74N thin films grown on Si (001) at various discharge powers and processing pressures values have been investigated. According to x-ray diffraction (XRD) measurements, the texture of the as-grown Sc0.26Al0.74N thin films becomes more prominent in the [0001]-direction at the highest target power (700 W) and at the lowest processing pressure (4 mTorr). The piezoelectric response, as determined by measuring the d33 piezoelectric constant, shows a maximum value of -12 pC/N also at 4 mTorr and 700 W, confirming a direct correlation between the d33 piezoelectric constant and the degree of orientation in the [0001]-direction. The atomic concentration of Sc and Al in the synthesized ScAlN thin film, determined by secondary ion mass spectroscopy (SIMS), reveals a Sc concentration lower than in the ScAl alloy target. The piezoresponse force microscopy (PFM) shows homogeneous polarity distribution with no inversion domains. The piezoelectric layers have been used to fabricate and measure surface acoustic wave (SAW) resonators on a Sc0.26Al0.74N/Si (001) bilayer system with resonance frequency of 1.4 GHz and coupling coefficient of 0.567. Such characteristic in the frequency response reveals the potential of these materials for advanced SAW devices in applications such as next generation (5 G) wireless communication systems.

Coating of 6028 Aluminum Alloy Using Aluminum Piston Alloy and Al-Si Alloy-Based Nanocomposites Produced by the Addition of Al-Ti5-B1 to the Matrix Melt

NASA Astrophysics Data System (ADS)

El-Labban, Hashem F.; Abdelaziz, M.; Mahmoud, Essam R. I.

2014-10-01

The Al-12 pctSi alloy and aluminum-based composites reinforced with TiB2 and Al3Ti intermetallics exhibit good wear resistance, strength-to-weight ratio, and strength-to-cost ratio when compared to equivalent other commercial Al alloys, which make them good candidates as coating materials. In this study, structural AA 6028 alloy is used as the base material. Four different coating materials were used. The first one is Al-Si alloy that has Si content near eutectic composition. The second, third, and fourth ones are Al-6 pctSi-based reinforced with TiB2 and Al3Ti nano-particles produced by addition of Al-Ti5-B1 master alloy with different weight percentages (1, 2, and 3 pct). The coating treatment was carried out with the aid of GTAW process. The microstructures of the base and coated materials were investigated using optical microscope and scanning electron microscope equipped with EDX analyzer. Microhardness of the base material and the coated layer were evaluated using a microhardness tester. GTAW process results in almost sound coated layer on 6028 aluminum alloy with the used four coating materials. The coating materials of Al-12 pct Si alloy resulted in very fine dendritic Al-Si eutectic structure. The interface between the coated layer and the base metal was very clean. The coated layer was almost free from porosities or other defects. The coating materials of Al-6 pct Si-based mixed with Al-Ti5-B1 master alloy with different percentages (1, 2, and 3 pct), results in coated layer consisted of matrix of fine dendrite eutectic morphology structure inside α-Al grains. Many fine in situ TiAl3 and TiB2 intermetallics were precipitated almost at the grain boundary of α-Al grains. The amounts of these precipitates are increased by increasing the addition of Al-Ti5-B1 master alloy. The surface hardness of the 6028 aluminum alloy base metal was improved with the entire four used surface coating materials. The improvement reached to about 85 pct by the first type of coating material (Al-12 pctSi alloy), while it reached to 77, 83, and 89 pct by the coating materials of Al-6 pct Si-based mixed with Al-Ti5-B1 master alloy with different percentages 1, 2, and 3 pct, respectively.

Selective layer disordering in intersubband Al 0.028Ga 0.972 N/AlN superlattices with silicon nitride capping layer

DOE PAGES

Wierer, Jonathan J.; Allerman, Andrew A.; Skogen, Erik J.; ...

2015-06-01

We demonstrate the selective layer disordering in intersubband Al 0.028Ga 0.972 N/AlN superlattices using a silicon nitride (SiN x) capping layer. The (SiN x) capped superlattice exhibits suppressed layer disordering under high-temperature annealing. In addition, the rate of layer disordering is reduced with increased SiN x thickness. The layer disordering is caused by Si diffusion, and the SiN x layer inhibits vacancy formation at the crystal surface and ultimately, the movement of Al and Ga atoms across the heterointerfaces. In conclusion, patterning of the SiN x layer results in selective layer disordering, an attractive method to integrate active and passivemore » III–nitride-based intersubband devices.« less

Electrical properties of Al foil/n-4H-SiC Schottky junctions fabricated by surface-activated bonding

NASA Astrophysics Data System (ADS)

Morita, Sho; Liang, Jianbo; Matsubara, Moeko; Dhamrin, Marwan; Nishio, Yoshitaka; Shigekawa, Naoteru

2018-02-01

We fabricate 17-µm-thick Al foil/n-4H-SiC Schottky junctions by surface-activated bonding. Their current-voltage and capacitance-voltage characteristics are compared with those of Schottky junctions fabricated by evaporating Al layers on n-4H-SiC epilayers. We find that the ideality factor of Al foil/SiC junctions is larger than that of conventional junctions, which is due to the irradiation of the fast atom beam (FAB) of Ar. The ideality factor of Al foil/SiC junctions is improved by annealing at 400 °C. We also find that the Schottky barrier height is increased by FAB irradiation, which is likely to be due to the negative charges formed at SiC surfaces.

Research on Antiphonic Characteristic of AlMg10-SiC Ultralight Composite Materials

NASA Astrophysics Data System (ADS)

Rusu, O.; Rusu, I.

2018-06-01

The paper presents the results on the absorption sound testing of an ultralight cellular composite material AlMg10-SiC, obtained by sputtering method. We have chosen this type of material because its microstructure generally comprises open cells (and relatively few semi-open cells), evenly distributed in the material, a structure that, at least theoretically, has a favorable behavior in relation to sound damping. The tests were performed on three types of samples, namely P11 – AlMg10 – 5%SiC, P12 – AlMg10 – 10%SiC şi P13 – AlMg10 – 15%SiC. The 15% SiC (P13) cellular material sample has the best sound-absorbing characteristics and the highest practical absorption degree.

Monte Carlo Simulation of Nanoparticle Encapsulation in Flames

NASA Technical Reports Server (NTRS)

Sun, Z.; Huertas, J. I.; Axelbaum, R. L.

1999-01-01

Gas-phase combustion (flame) synthesis has been an essential industrial process for producing large quantities of powder materials such as carbon black, titanium dioxide, and silicon dioxide. Flames typically produce simple oxides, with carbon black being the noted exception because the oxides of carbon are gaseous and are easily separated from the particulate matter that is formed during fuel pyrolysis. Furthermore, the powders produced in flames are usually agglomerated, nanometer-sized particles (nanoparticles). This composition and morphology is acceptable for many applications. However, the present interest in nanoparticles for advanced materials application has led to efforts to employ flames for the synthesis of unagglomerated nanoparticles (2 to 100 nm) of metals and non-oxide ceramics. Sodium-halide chemistry has proven to be viable for producing metals and non-oxide ceramics in flames. Materials that have been produced to date include Si (Calcote and Felder, 1993), TiN, TiB2, TiC, TiSi2, SiC, B4C (Glassman et al, 1993) Al, W, Ti, TiB2, AlN, and W-Ti and Al-AlN composites (DuFaux and Axelbaum, 1995, Axelbaum et al 1996,1997). Many more materials are possible. The main challenge that faces application of flame synthesis for advanced materials is overcoming formation of agglomerates in flames (Brezinsky, 1997). The high temperatures and high number densities in the flame environment favor the formation of agglomerates. Agglomerates must be avoided for many reasons. For example, when nanopowders are consolidated, agglomerates have a deleterious effect on compaction density, leading to voids in the final part. Efforts to avoid agglomeration in flames without substantially reducing particle number density and, consequently, production rate, have had limited success. Another critical challenge that faces all synthesis routes for nanopowders is ensuring that the powders are high purity and that the process is scaleable. Though the containerless, high temperature environment of a flame is excellent for producing high-purity simple compounds, ultrafine metals and non-oxide ceramic powders are inherently reactive in the presence of oxygen and/or moisture. Thus, the handling of these powders after synthesis poses a challenging problem. Impurities acquired during handling of nanoparticles have plagued the advancement of nanostructured materials technology.

Transition of Blast Furnace Slag from Silicate-Based to Aluminate-Based: Structure Evolution by Molecular Dynamics Simulation and Raman Spectroscopy

NASA Astrophysics Data System (ADS)

Liang, Dong; Yan, Zhiming; Lv, Xuewei; Zhang, Jie; Bai, Chenguang

2017-02-01

To determine the effect of Al2O3 content and Al2O3/SiO2 mass ratio on the structure of molten aluminosilicate systems, CaO-SiO2-Al2O3-MgO-TiO2 systems were investigated by conducting molecular dynamics (MD) simulation and Raman spectroscopy. The capabilities of different elements to attract O on the basis of bond length are ranked as follows: Si > Al > Ca. The CNSi-O (approximately 4) and the average CNAl-O (approximately 4.09) demonstrate that the [AlO4] tetrahedron is not as stable as the [SiO4] tetrahedron and that some highly coordinated Al units exist in the slags. Non-bridging oxygen prefers to be coordinated with Si, and Al tends to be localized in polymerized environments as a network intermediate phase. In addition, Ca2+ is more energetically active than Mg2+ as the charge compensation ion. MD results and Raman analysis show that an increase in Al2O3 content complicates the structure at a fixed CaO/SiO2 ratio. In addition, the viscosity of the sample may increase with increasing Al2O3 content but is also influenced by polymerization strength. The substitution of Al2O3 for SiO2 simplifies the structure of the slag at a fixed CaO concentration when Al2O3/SiO2 is less than 0.92, as indicated by the (Q4 + Q3)/(Q2 + Q1) ratio of Al and the structure complexity. The results of MD and Raman analysis agree with those of viscosity measurement.

In Situ SEM Observations of Fracture Behavior of Laser Welded-Brazed Al/Steel Dissimilar Joint

NASA Astrophysics Data System (ADS)

Xia, Hongbo; Tan, Caiwang; Li, Liqun; Ma, Ninshu

2018-03-01

Laser welding-brazing of 6061-T6 aluminum alloy to DP590 dual-phase steel with Al-Si12 flux-cored filler wire was performed. The microstructure at the brazing interface was characterized. Fracture behavior was observed and analyzed by in situ scanning electron microscope. The microstructure of the brazing interface showed that inhomogeneous intermetallic compounds formed along the thickness direction, which had a great influence on the crack initiation and propagation. In the top region, the reaction layer at the interface consisted of scattered needle-like Fe(Al,Si)3 and serration-shaped Fe1.8Al7.2Si. In the middle region, the compound at the interface was only serration-shaped Fe1.8Al7.2Si. In the bottom region, the interface was composed of lamellar-shaped Fe1.8Al7.2Si. The cracks were first detected in the bottom region and propagated from bottom to top along the interface. At the bottom region, the crack initiated and propagated along the Fe1.8Al7.2Si/weld seam interface during the in situ tensile test. When the crack propagated into the middle region, a deflection of crack propagation appeared. The crack first propagated along the steel/Fe1.8Al7.2Si interface and then moved along the weld seam until the failure of the joint. The tensile strength of the joint was 146.5 MPa. Some micro-cracks were detected at Fe(Al,Si)3 and the interface between the steel substrate and Fe(Al,Si)3 in the top region while the interface was still connected.

Silver-Loaded Aluminosilicate Aerogels As Iodine Sorbents.

PubMed

Riley, Brian J; Kroll, Jared O; Peterson, Jacob A; Matyáš, Josef; Olszta, Matthew J; Li, Xiaohong; Vienna, John D

2017-09-27

In this paper, aluminosilicate aerogels were used as scaffolds for silver nanoparticles to capture I 2 (g). The starting materials for these scaffolds included Na-Al-Si-O and Al-Si-O aerogels, both synthesized from metal alkoxides. The Ag 0 particles were added by soaking the aerogels in aqueous AgNO 3 solutions followed by drying and Ag + reduction under H 2 /Ar to form Ag 0 crystallites within the aerogel matrix. In some cases, aerogels were thiolated with 3-(mercaptopropyl)trimethoxysilane as an alternative method for binding Ag + . During the Ag + -impregnation steps, for the Na-Al-Si-O aerogels, Na was replaced with Ag, and for the Al-Si-O aerogels, Si was replaced with Ag. The Ag-loading of thiolated versus nonthiolated Na-Al-Si-O aerogels was comparable at ∼35 atomic %, whereas the Ag-loading in unthiolated Al-Si-O aerogels was significantly lower at ∼7 atomic % after identical treatment. Iodine loadings in both thiolated and unthiolated Ag 0 -functionalized Na-Al-Si-O aerogels were >0.5 m I m s -1 (denoting the mass of iodine captured per starting mass of the sorbent) showing almost complete utilization of the Ag through chemisorption to form AgI. Iodine loading in the thiolated and Ag 0 -functionalized Al-Si-O aerogel was 0.31 m I m s -1 . The control of Ag uptake over solution residence time and [Ag] demonstrates the ability to customize the Ag-loading in the base sorbent to regulate the loading capacity of iodine.

Friction and wear of oxide-ceramic sliding against IN-718 nickel base alloy at 25 to 800 C in atmospheric air

NASA Technical Reports Server (NTRS)

Sliney, Harold E.; Deadmore, Daniel L.

1989-01-01

The friction and wear of oxide-ceramics sliding against the nickel base alloy IN-718 at 25 to 800 C were measured. The oxide materials tested were mullite (3Al2O3.2SiO2); lithium aluminum silicate (LiAlSi(x)O(y)); polycrystalline monolithic alpha alumina (alpha-Al2O3); single crystal alpha-Al2O3 (sapphire); zirconia (ZrO2); and silicon carbide (SiC) whisker-reinforced Al2O3 composites. At 25 C the mullite and zirconia had the lowest friction and the polycrystalline monolithic alumina had the lowest wear. At 800 C the Al2O3-8 vol/percent SiC whisker composite had the lowest friction and the Al2O3-25 vol/percent SiC composite had the lowest wear. The friction of the Al2O3-SiC whisker composites increased with increased whisker content while the wear decreased. In general, the wear-resistance of the ceramics improve with their hardness.

In situ structural analysis of calcium aluminosilicate glasses under high pressure.

PubMed

Muniz, R F; de Ligny, D; Martinet, C; Sandrini, M; Medina, A N; Rohling, J H; Baesso, M L; Lima, S M; Andrade, L H C; Guyot, Y

2016-08-10

In situ micro-Raman spectroscopy was used to investigate the structural evolution of OH(-)-free calcium aluminosilicate glasses, under high pressure and at room temperature. Evaluation was made of the role of the SiO2 concentration in percalcic join systems, for Al/(Al  +  Si) in the approximate range from 0.9 to 0.2. Under high pressure, the intensity of the main band related to the bending mode of bridging oxygen ([Formula: see text][T-O-T], where T  =  Si or Al) decreased gradually, suggesting that the bonds were severely altered or even destroyed. In Si-rich glasses, compression induced a transformation of Q (n) species to Q (n-1). In the case of Al-rich glass, the Al in the smallest Q (n) units evolved from tetrahedral to higher-coordinated Al (([5])Al and ([6])Al). Permanent structural changes were observed in samples recovered from the highest pressure of around 15 GPa and, particularly for Si-rich samples, the recovered structure showed an increase of three-membered rings in the Si/Al tetrahedral network.

MarsSI: Martian surface data processing information system

NASA Astrophysics Data System (ADS)

Quantin-Nataf, C.; Lozac'h, L.; Thollot, P.; Loizeau, D.; Bultel, B.; Fernando, J.; Allemand, P.; Dubuffet, F.; Poulet, F.; Ody, A.; Clenet, H.; Leyrat, C.; Harrisson, S.

2018-01-01

MarsSI (Acronym for Mars System of Information, https://emars.univ-lyon1.fr/MarsSI/, is a web Geographic Information System application which helps managing and processing martian orbital data. The MarsSI facility is part of the web portal called PSUP (Planetary SUrface Portal) developed by the Observatories of Paris Sud (OSUPS) and Lyon (OSUL) to provide users with efficient and easy access to data products dedicated to the martian surface. The portal proposes 1) the management and processing of data thanks to MarsSI and 2) the visualization and merging of high level (imagery, spectral, and topographic) products and catalogs via a web-based user interface (MarsVisu). The portal PSUP as well as the facility MarsVisu is detailed in a companion paper (Poulet et al., 2018). The purpose of this paper is to describe the facility MarsSI. From this application, users are able to easily and rapidly select observations, process raw data via automatic pipelines, and get back final products which can be visualized under Geographic Information Systems. Moreover, MarsSI also contains an automatic stereo-restitution pipeline in order to produce Digital Terrain Models (DTM) on demand from HiRISE (High Resolution Imaging Science Experiment) or CTX (Context Camera) pair-images. This application is funded by the European Union's Seventh Framework Programme (FP7/2007-2013) (ERC project eMars, No. 280168) and has been developed in the scope of Mars, but the design is applicable to any other planetary body of the solar system.

Microstructure and Dry Sliding Wear Resistance of Laser Cladding Ti-Al-Si Composite Coating

NASA Astrophysics Data System (ADS)

Zhang, H. X.; Yu, H. J.; Chen, C. Z.; Dai, J. J.

In order to improve the wear resistance of Ti alloys, different mass ratios of Ti-Si-Al powders were designed to fabricate hard phases reinforced intermetallic matrix composite coatings on the Ti-6Al-4V substrate by laser cladding. The corresponding coatings were characterized by X-ray diffraction (XRD), scanning electron microscope (SEM), energy dispersive spectrometer (EDS) and high resolution transmission microscopy (HRTEM). The HV-1000 hardness tester and MM200 wear test machine were employed to test the hardness and the wear resistance of the composite coatings, respectively. The composite coatings mainly consisted of the reinforcements of Ti5Si3, Ti3AlC2 and Ti7Al5Si12 and the matrix of Ti3Al, TiAl, TiAl3 and α-Ti. The micro-hardness of the Ti-35Al-15Si coating was from 956 HV0.2 to 1130 HV0.2, which was approximately 3-4 times of the substrate and the highest in the three samples. The wear rate of the Ti-35Al-15Si coating was 0.023cm3ṡmin-1, which was about 1/4 of the Ti-6Al-4V substrate. It was the lowest in the three samples.

The effect of silicon on the oxidation behavior of NiAlHf coating system

NASA Astrophysics Data System (ADS)

Dai, Pengchao; Wu, Qiong; Ma, Yue; Li, Shusuo; Gong, Shengkai

2013-04-01

Two types of NiAlHf coatings doped with different content of Si (1 at.% and 2 at.%) were deposited on a Ni3Al based single crystal superalloy IC32 by electron beam physical vapor deposition (EB-PVD) method, respectively. For comparison, NiAlHf coating with 0 at.% Si was also prepared. The oxidation tests were carried out at 1423 K in air. At the initial stage of oxidation, large amount of flake-like θ-Al2O3 was found on NiAlHf coating surface. However, no θ-Al2O3 was observed in 2 at.% Si doped NiAlHf coating except α-Al2O3. It revealed that the Si additions could contribute to the transformation from θ-Al2O3 to α-Al2O3. When oxidation time prolonged to 100 h, it was found that the degradation of NiAlHf coating was very severe with no residual β-phase, which was due to the serious inter-diffusion between the coating and substrate. In contrast, the inter-diffusion in Si-doped coating was reduced with some residual β-phase and R-Ni(Mo, Re) precipitates. The presence of Si could retard the inter-diffusion of elements between coating and substrate, indicating a barrier diffusion effect. As a result, the oxidation resistance of NiAlHf coating was improved significantly.

XPS and EELS characterization of Mn2SiO4, MnSiO3 and MnAl2O4

NASA Astrophysics Data System (ADS)

Grosvenor, A. P.; Bellhouse, E. M.; Korinek, A.; Bugnet, M.; McDermid, J. R.

2016-08-01

X-ray Photoelectron Spectroscopy (XPS) and Electron Energy Loss Spectroscopy (EELS) are strong candidate techniques for characterizing steel surfaces and substrate-coating interfaces when investigating the selective oxidation and reactive wetting of advanced high strength steels (AHSS) during the continuous galvanizing process. However, unambiguous identification of ternary oxides such as Mn2SiO4, MnSiO3, and MnAl2O4 by XPS or EELS, which can play a significant role in substrate reactive wetting, is difficult due to the lack of fully characterized standards in the literature. To resolve this issue, samples of Mn2SiO4, MnSiO3 and MnAl2O4 were synthesized and characterized by XPS and EELS. The unique features of the XPS and EELS spectra for the Mn2SiO4, MnSiO3 and MnAl2O4 standards were successfully derived, thereby allowing investigators to fully differentiate and identify these oxides at the surface and subsurface of Mn, Si and Al alloyed AHSS using these techniques.

JPRS Report; Science & Technology Japan.

DTIC Science & Technology

1989-05-02

jwmitod JPRS-JST-89-009 2 MAY 1989 SCIENCE & TECHNOLOGY JAPAN CONTENTS ADVANCED MATERIALS Properties of S-SiAlON Prepared by HIP [Kazuya...Yabuta, Hiroaki Nishio, et al.; 8TH HIGH TEMPERATURE MATERIALS KISO TORONKAI, 10-11 Nov 88] 1 Properties of SißN^-SiC Whisker Ceramics lYasuhiro...Goto, Takeyuki Yonezawa, et al,; 8TH HIGH TEMPERATURE MATERIALS KISO TORONKAI, 10-11 Nov 88] 6 Si-Nz-SiC Nanocomposites [Koichi Shinhara, Atsushi

Thermal Treatment, Sliding Wear and Saline Corrosion of Al In Situ Reinforced with Mg2Si and Ex Situ Reinforced with TiC Particles

NASA Astrophysics Data System (ADS)

Lekatou, A. G.; Poulia, A.; Mavros, H.; Karantzalis, A. E.

2018-02-01

The main objective of this work is to produce a composite consisting of (a) a cast heat-treatable Al-Mg-Si alloy with high contents of Mg for corrosion resistance and Si to offset the Mg-due poor castability (in situ hypoeutectic Mg2Si/Al composite) and (b) TiC particles at high enough volume fractions (≤ 15%), in order to achieve a satisfactory combination of wear and corrosion performance. TiCp/Al-7Mg-5Si (wt.%) composites were produced by flux-assisted casting followed by solution and aging heat treatment. Solution treatment led to a relatively uniform dispersion and shape rounding of Mg2Si precipitates and Si particles. TiC particle addition resulted in refinement of primary Al, modification of the Mg2Si Chinese script morphology and refinement/spheroidization of primary Mg2Si. Heat treatment combined with TiC addition notably improved the sliding wear resistance of Al-7Mg-5Si. A wear mechanism has been proposed. The TiC/Al interfaces remained intact of corrosion during potentiodynamic polarization of the heat-treated materials in 3.5 wt.% NaCl. Different main forms of localized corrosion in 3.5 wt.% NaCl were identified for each TiC content (0, 5, 15 vol.%), depending on specific degradation favoring microstructural features (topology/size/interface wetting) at each composition.

Deposition and characterization of TiAlSiN nanocomposite coatings prepared by reactive pulsed direct current unbalanced magnetron sputtering

NASA Astrophysics Data System (ADS)

Barshilia, Harish C.; Ghosh, Moumita; Shashidhara; Ramakrishna, Raja; Rajam, K. S.

2010-08-01

This work reports the performance of high speed steel drill bits coated with TiAlSiN nanocomposite coating at different Si contents (5.5-8.1 at.%) prepared using a four-cathode reactive pulsed direct current unbalanced magnetron sputtering system. The surface morphology of the as-deposited coatings was characterized using field emission scanning electron microscopy. The crystallographic structure, chemical composition and bonding structure were evaluated using X-ray diffraction, energy-dispersive X-ray analysis, X-ray photoelectron spectroscopy, respectively. The corrosion behavior, mechanical properties and thermal stability of TiAlSiN nanocomposite coatings were also studied using potentiodynamic polarization, nanoindentation and Raman spectroscopy, respectively. The TiAlSiN coating thickness was approximately 2.5-2.9 μm. These coatings exhibited a maximum hardness of 38 GPa at a silicon content of approximately 6.9 at.% and were stable in air up to 850 °C. For the performance evaluation, the TiAlSiN coated drills were tested under accelerated machining conditions by drilling a 12 mm thick 304 stainless steel plate. Under dry conditions the uncoated drill bits failed after drilling 50 holes, whereas, TiAlSiN coated drill bits (Si = 5.5 at.%) drilled 714 holes before failure. Results indicated that for TiAlSiN coated drill bits the tool life increased by a factor of more than 14.

Microstructure and Mechanical Properties of Dissimilar Joints of Al-Mg2Si and 5052 Aluminum Alloy by Friction Stir Welding

NASA Astrophysics Data System (ADS)

Huang, B. W.; Qin, Q. D.; Zhang, D. H.; Wu, Y. J.; Su, X. D.

2018-03-01

Al-Mg2Si alloy and 5052 Al alloy were welded successfully by friction stir welding (FSW) in this study. The results show that the alloy consists of three distinct zones after FSW: the base material zone (BMZ), the transitional zone, and the weld nugget (WN). The morphologies of the primary Mg2Si phases are identified as coarse equiaxed crystals for Al-Mg2Si alloys in the BMZ. The WN is a mixture of rich Al-Mg2Si and rich 5052 alloy, and a banded structure is formed in the zone. Interestingly, in the WN, the equiaxed crystals changed to polygonal particles with substantially reduced sizes in the rich Al-Mg2Si zone. However, in addition to the white rich Mg phase appearing in the rich 5052 zone near the interface, the 5052 alloy does not show obvious changes. The hardness gradually increases from the BMZ of the 5052 to the welded joint to the Al-Mg2Si BMZ. In addition, the ultimate tensile strength (UTS) of the welded joint is higher than that of the base material of the Al-Mg2Si, whereas it is lower than that of the 5052 base alloy. The results of the elongation are similar to the UTS results. The fracture mechanism is also investigated.

New Insight into Phase Formation of MxMg2Al4+xSi5−xO18:Eu2+ Solid Solution Phosphors and Its Luminescence Properties

PubMed Central

Zhou, Jun; Xia, Zhiguo; Chen, Mingyue; Molokeev, Maxim S.; Liu, Quanlin

2015-01-01

Here we reported the phase formation of MxMg2Al4+xSi5−xO18:Eu2+ (M = K, Rb) solid solution phosphors, where M+ ions were introduced into the void channels of Mg2Al4Si5O18 via Al3+/Si4+ substitution to keep the charge balance. XRD results revealed that the as-prepared phosphors with different M+ contents were iso-structural with Mg2Al4Si5O18 phase. The combined analysis of the Rietveld refinement and high resolution transmission electron microscopy (HRTEM) results proved that M+ ions were surely introduced into the intrinsic channels in Mg2Al4Si5O18. The emission peaks of MxMg2Al4+xSi5−xO18:Eu2+ (M = K, Rb) phosphors with various x values performed a systematic red-shift tendency, which was ascribed to the elongation of [MgO6] octahedra. The temperature stable photoluminescence and internal quantum efficiency (QE) of MxMg2Al4+xSi5−xO18:Eu2+ (M = K, Rb) phosphors were enhanced owing to the filling of M+ in the void channels suggesting a new insight to design the solid solution phosphors with improved photoluminescence properties. PMID:26190348

Integrated optical isolators using magnetic surface plasmon (Presentation Recording)

NASA Astrophysics Data System (ADS)

Shimizu, Hiromasa; Kaihara, Terunori; Umetsu, Saori; Hosoda, Masashi

2015-09-01

Optical isolators are one of the essential components to protect semiconductor laser diodes (LDs) from backward reflected light in integrated optics. In order to realize optical isolators, nonreciprocal propagation of light is necessary, which can be realized by magnetic materials. Semiconductor optical isolators have been strongly desired on Si and III/V waveguides. We have developed semiconductor optical isolators based on nonreciprocal loss owing to transverse magneto-optic Kerr effect, where the ferromagnetic metals are deposited on semiconductor optical waveguides1). Use of surface plasmon polariton at the interface of ferromagnetic metal and insulator leads to stronger optical confinement and magneto-optic effect. It is possible to modulate the optical confinement by changing the magnetic field direction, thus optical isolator operation is proposed2, 3). We have investigated surface plasmons at the interfaces between ferrimagnetic garnet/gold film, and applications to waveguide optical isolators. We assumed waveguides composed of Au/Si(38.63nm)/Ce:YIG(1700nm)/Si(220nm)/Si , and calculated the coupling lengths between Au/Si(38.63nm)/Ce:YIG plasmonic waveguide and Ce:YIG/Si(220nm)/Si waveguide for transversely magnetized Ce:YIG with forward and backward directions. The coupling length was calculated to 232.1um for backward propagating light. On the other hand, the coupling was not complete, and the length was calculated to 175.5um. The optical isolation by using the nonreciprocal coupling and propagation loss was calculated to be 43.7dB when the length of plasmonic waveguide is 700um. 1) H. Shimizu et al., J. Lightwave Technol. 24, 38 (2006). 2) V. Zayets et al., Materials, 5, 857-871 (2012). 3) J. Montoya, et al, J. Appl. Phys. 106, 023108, (2009).

Influence of Composition on the Environmental Impact of a Cast Aluminum Alloy

PubMed Central

Gómez, Patricia; Elduque, Daniel; Sarasa, Judith; Pina, Carmelo; Javierre, Carlos

2016-01-01

The influence of alloy composition on the environmental impact of the production of six aluminum casting alloys (Al Si12Cu1(Fe), Al Si5Mg, Al Si9Cu3Zn3Fe, Al Si10Mg(Fe), Al Si9Cu3(Fe)(Zn) and Al Si9) has been analyzed. In order to perform a more precise environmental impact calculation, Life Cycle Assessment (LCA) with ReCiPe Endpoint methodology has been used, with the EcoInvent v3 AlMg3 aluminum alloy dataset as a reference. This dataset has been updated with the material composition ranges of the mentioned alloys. The balanced, maximum and minimum environmental impact values have been obtained. In general, the overall impact of the studied aluminum alloys varies from 5.98 × 10−1 pts to 1.09 pts per kg, depending on the alloy composition. In the analysis of maximum and minimum environmental impact, the alloy that has the highest uncertainty is AlSi9Cu3(Fe)(Zn), with a range of ±9%. The elements that contribute the most to increase its impact are Copper and Tin. The environmental impact of a specific case, an LED luminaire housing made out of an Al Si12Cu1(Fe) cast alloy, has been studied, showing the importance of considering the composition. Significant differences with the standard datasets that are currently available in EcoInvent v3 have been found. PMID:28773536

Influence of Composition on the Environmental Impact of a Cast Aluminum Alloy.

PubMed

Gómez, Patricia; Elduque, Daniel; Sarasa, Judith; Pina, Carmelo; Javierre, Carlos

2016-05-25

The influence of alloy composition on the environmental impact of the production of six aluminum casting alloys (Al Si12Cu1(Fe), Al Si5Mg, Al Si9Cu3Zn3Fe, Al Si10Mg(Fe), Al Si9Cu3(Fe)(Zn) and Al Si9) has been analyzed. In order to perform a more precise environmental impact calculation, Life Cycle Assessment (LCA) with ReCiPe Endpoint methodology has been used, with the EcoInvent v3 AlMg3 aluminum alloy dataset as a reference. This dataset has been updated with the material composition ranges of the mentioned alloys. The balanced, maximum and minimum environmental impact values have been obtained. In general, the overall impact of the studied aluminum alloys varies from 5.98 × 10 -1 pts to 1.09 pts per kg, depending on the alloy composition. In the analysis of maximum and minimum environmental impact, the alloy that has the highest uncertainty is AlSi9Cu3(Fe)(Zn), with a range of ±9%. The elements that contribute the most to increase its impact are Copper and Tin. The environmental impact of a specific case, an LED luminaire housing made out of an Al Si12Cu1(Fe) cast alloy, has been studied, showing the importance of considering the composition. Significant differences with the standard datasets that are currently available in EcoInvent v3 have been found.

Crystal structure and anisotropic magnetic properties of new ferromagnetic Kondo lattice compound Ce(Cu,Al,Si)2

NASA Astrophysics Data System (ADS)

Maurya, A.; Thamizhavel, A.; Dhar, S. K.; Provino, A.; Pani, M.; Costa, G. A.

2017-03-01

Single crystals of the new compound CeCu0.18Al0.24Si1.58 have been grown by high-temperature solution growth method using a eutectic Al-Si mixture as flux. This compound is derived from the binary CeSi2 (tetragonal α-ThSi2-type, Pearson symbol tI12, space group I41/amd) obtained by partial substitution of Si by Cu and Al atoms but showing full occupation of the Si crystal site (8e). While CeSi2 is a well-known valence-fluctuating paramagnetic compound, the CeCu0.18Al0.24Si1.58 phase orders ferromagnetically at TC=9.3 K. At low temperatures the easy-axis of magnetization is along the a-axis, which re-orients itself along the c-axis above 30 K. The presence of hysteresis in the magnetization curve, negative temperature coefficient of resistivity at high temperatures, reduced jump in the heat capacity and a relatively lower entropy released up to the ordering temperature, and enhanced Sommerfeld coefficient (≈100 mJ/mol K2) show that CeCu0.18Al0.24Si1.58 is a Kondo lattice ferromagnetic, moderate heavy fermion compound. Analysis of the high temperature heat capacity data in the paramagnetic region lets us infer that the crystal electric field split doublet levels are located at 178 and 357 K, respectively, and Kondo temperature (8.4 K) is of the order of TC in CeCu0.18Al0.24Si1.58.

Effects of Heat Treatment on the Microstructures and High Temperature Mechanical Properties of Hypereutectic Al-14Si-Cu-Mg Alloy Manufactured by Liquid Phase Sintering Process

NASA Astrophysics Data System (ADS)

Heo, Joon-Young; Gwon, Jin-Han; Park, Jong-Kwan; Lee, Kee-Ahn

2018-05-01

Hypereutectic Al-Si alloy is an aluminum alloy containing at least 12.6 wt.% Si. It is necessary to evenly control the primary Si particle size and distribution in hypereutectic Al-Si alloy. In order to achieve this, there have been attempts to manufacture hypereutectic Al-Si alloy through a liquid phase sintering. This study investigated the microstructures and high temperature mechanical properties of hypereutectic Al-14Si-Cu-Mg alloy manufactured by liquid phase sintering process and changes in them after T6 heat treatment. Microstructural observation identified large amounts of small primary Si particles evenly distributed in the matrix, and small amounts of various precipitation phases were found in grain interiors and grain boundaries. After T6 heat treatment, the primary Si particle size and shape did not change significantly, but the size and distribution of CuAl2 ( θ) and AlCuMgSi ( Q) changed. Hardness tests measured 97.36 HV after sintering and 142.5 HV after heat treatment. Compression tests were performed from room temperature to 300 °C. The results represented that yield strength was greater after heat treatment (RT 300 °C: 351 93 MPa) than after sintering (RT 300 °C: 210 89 MPa). Fracture surface analysis identified cracks developing mostly along the interface between the primary Si particles and the matrix with some differences among temperature conditions. In addition, brittle fracture mode was found after T6 heat treatment.

Microstructure of as-fabricated UMo/Al(Si) plates prepared with ground and atomized powder

NASA Astrophysics Data System (ADS)

Jungwirth, R.; Palancher, H.; Bonnin, A.; Bertrand-Drira, C.; Borca, C.; Honkimäki, V.; Jarousse, C.; Stepnik, B.; Park, S.-H.; Iltis, X.; Schmahl, W. W.; Petry, W.

2013-07-01

UMo-Al based fuel plates prepared with ground U8wt%Mo, ground U8wt%MoX (X = 1 wt%Pt, 1 wt%Ti, 1.5 wt%Nb or 3 wt%Nb) and atomized U7wt%Mo have been examined. The first finding is that that during the fuel plate production the metastable γ-UMo phases partly decomposed into two different γ-UMo phases, U2Mo and α'-U in ground powder or α″-U in atomized powder. Alloying small amounts of a third element to the UMo had no measurable effect on the stability of the γ-UMo phase. Second, the addition of some Si inside the Al matrix and the presence of oxide layers in ground and atomized samples is studied. In the case with at least 2 wt%Si inside the matrix a Silicon rich layer (SiRL) forms at the interface between the UMo and the Al during the fuel plate production. The SiRL forms more easily when an Al-Si alloy matrix - which is characterized by Si precipitates with a diameter ⩽1 μm - is used than when an Al-Si mixed powder matrix - which is characterized by Si particles with some μm diameter - is used. The presence of an oxide layer on the surface of the UMo particles hinders the formation of the SiRL. Addition of some Si into the Al matrix [7-11]. Application of a protective barrier at the UMo/Al interface by oxidizing the UMo powder [7,12]. Increase of the Mo content or use of UMo alloys with ternary element addition X (e.g. X = Nb, Ti, Pt) to stabilize the γ-UMo with respect to α-U or to control the UMo-Al interaction layer kinetics [9,12-24]. Use of ground UMo powder instead of atomized UMo powder [10,25] The points 1-3 are to limit the formation of the undesired UMo/Al layer. Especially the addition of Si into the matrix has been suggested [3,7,8,10,11,26,27]. It has been often mentioned that Silicon is efficient in reducing the Uranium-Aluminum diffusion kinetics since Si shows a higher chemical affinity to U than Al to U. Si suppresses the formation of brittle UAl4 which causes a huge swelling during the irradiation. Furthermore it enhances the formation of more stable UAl3 within the diffusion layer [14]. In addition, Si will not notably influence the reactor neutronics due to its low absorption cross section for thermal neutrons of σabs = 0.24 barn. Aluminum has σabs = 0.23 barn.Williams [28], Bierlein [29], Green [30] and de Luca [31] showed the first time in the 1950s that alloying Aluminum with some Silicon reduces the Uranium-Aluminum diffusion kinetics in can-type fuel elements. However, up to now uncertainties remained about the most promising Si concentration and the involved mechanisms.Ground powder - possibility 4 - introduces a high density of defects like dislocations, oxide layers and impurities into UMo grains. Fuel prepared with this kind of powder exhibits a larger porosity. It may also be combined with an AlSi matrix. As a consequence, the degree of swelling due to high-burn up is reduced compared to fuel with atomized powder [5,6,25].This study focuses on the metallurgical characterization of as-fabricated samples prepared with ground UMo and UMoX (X = Ti, Nb, Pt) powders and atomized UMo powder. The influence of some Si into the Al matrix and the presence of oxide layers on the UMo is discussed. Details of the differences of samples with ground UMo from atomized UMo will be discussed.The examined samples originate from non-irradiated spare fuel plates from the IRIS-TUM irradiation campaign [5,6]. The samples containing ground UMoX powders and atomized UMo powders with Si addition into the matrix have been produced for this study [32]. Powder mixing: The UMo powder is mixed with Al powder. Compact production: UMo-Al powder is poured into a mould and undergoes compaction under large force. Plate-processing: An AlFeNi frame is placed on an AlFeNi plate and the UMo-Al compact is placed into the frame. Afterwards it is covered with a second AlFeNi plate. This assembly is hot-rolled to reduce the total thickness to 1.4 mm. Subsequently, a blister test (1-2 h at 400-450 °C) ensures that the fuelplate is sealed. After this step, the UMo particles are tightly covered with Al as shown in Fig. 1. To access the meat layer, small samples have been cut from the fuel plates. The AlFeNi cladding has been removed using abrasive paper and diamond polishing paste. Cross sections were prepared from each sample and examined using SEM/EDX and XRD. Laboratory scale XRD Laboratory sealed-tube XRD on a STOE-STADIP diffractometer equipped with an incident beam focusing monochromator and used in reflection geometry with respect to the sample. MoK-α radiation has been used. Details on the systems used can be found in [39]. mu;-XRD using micro-focused synchrotron radiation at the Swiss Light Source μ-XAS beamline (PSI, Switzerland). At SLS, the beam size was 3 × 3 μm2, the energy was 19.7 keV. Further details on the experimental procedure can be found in [40]. Only very small sample volumes are probed with this technique, therefore the results may not be representative for the whole miniplate. The standard deviation of the lattice parameters obtained with this method is ±0.01 Å in case not different given. High-energy XRD (HE-XRD) in transmission mode using synchrotron radiation at the "High Energy Diffraction and Scattering Beamline ID15B" of ESRF. An X-ray energy of 87 keV has been used, the beam size was 0.3 × 0.3 mm2. Details on the experimental procedure are presented in [41,42]. It was possible to determine the average mass fractions of the phases present inside the sample using this technique. The standard deviation of the lattice parameters obtained with this method is ±0.001 Å in case not different given. laser granulometry to determine the size distribution of the particles, XRD for phase identification. Granulometry measurements showed that a significant amount of very fine particles of a few μm to 10 μm size are present in the first class of powder.In both cases, laboratory XRD analyses evidenced only two phases: γ-UMo and UO2. In contrast to observations on the final fuel plates, there are no signs of α-U. Comparing XRD data of atomized UMo powder (taken form the IRIS4 experiment) and ground UMo powder with almost the same Mo content, the peaks are broader in XRD patterns of ground UMo and there is a higher background [44]. This points that the lattice structure of the UMo inside the ground powder is strongly disordered during the grinding process.Complementary investigations were performed in these ground UMo powder samples using HE-XRD. The obtained data can therefore directly be compared to those measured on pre-oxidized atomized UMo powders [45] and IRIS-TUM fuel plates [41]. For both powder samples the γ-UMo lattice constant has been estimated to 3.433 ± 0.002 Å which corresponds to about 7.2 wt% for Mo in the alloy according to Dwight's law [46]. The existence of two UMo phases inside these ground particles (as in atomized case) could not be investigated because of the huge peak broadening (presence of micro distortions). Whatever the sample granulometry, the analysis of the HE-XRD data showed a non-negligible nitride contamination in ground powders (see Fig. 2). Two uranium nitride phases are indeed found in these samples: UN and U2N3+x[47]. Note that the presence of UN has also been found in the as-fabricated plates. These results confirm the high reactivity of UMo with both Oxygen and Nitrogen in the grinding conditions. As a comparison for temperatures in the 200-250 °C range, it seems that UNx phases are more difficult to grow: they were not present in outer layers obtained by heat treatment under air on atomized particles [45]. Finally it can be seen in Table 3 that the weight fractions of UO2 and U2N3+x phases are lower in the sample with larger UMo particles. This suggests the existence of an oxide, nitride outer shell around UMo ground particle with thickness that does not strongly evolve with particle size. This constant outer shell thickness has also been found in pre-oxidized atomized powders [45].The UMoX powder used for the samples MAFIA-I-18 - MAFIA-I-21 has not been investigated prior to plate fabrication. However, since the grinding process is essentially the same as for the pure UMo powder, similar characteristics are assumed. Thin oxide layers with a thickness ⩽1 μm on some of the particles that were not intentionally oxidized. Although the UMo powder was stored and handled under an inert atmosphere over the whole production process, some residual oxygen has reacted with the UMo. Already this thin oxide layers exhibits cracks (Fig. 5). Thicker oxide layers with a thickness up to 5 μm on the UMo particles that were oxidized purposely. This kind of oxide layer is very brittle and shows large cracks (Fig. 6). The oxidized UMo particles tend to detach with the matrix as gaps between the UMo particles and the oxide layer could be observed (Fig. 6). This is most obvious at spots where a UMo particle has been pulled out during polishing. A part of the oxide layer remained inside the resulting hole (Fig. 7). Atomized UMo powder 2 wt%Si in Al matrix, alloyed AlSi 2 wt%Si in Al matrix, mixed AlSi 5 wt%Si in Al matrix, mixed AlSi 7 wt%Si in Al matrix, mixed AlSi Ground UMo powder 2 wt%Si in Al matrix, alloyed AlSi The influence of an oxide layer around the UMo particles on the formation of the SiRL during fuel plate production is further discussed. The growth of a Si rich layer surrounding the UMo particles in the 2 wt%Si alloyed powder (oxidized UMo), as well as the 5 wt% and 7 wt%Si mixed powder (non-oxidized UMo) during production of the miniplates. The presence of Si precipitates in the Al-matrix (large precipitates in case of mixture, small si particles in alloy). No oxide layer: If no oxide layer is present around the UMo particles a homogeneous SiRL grows at the interface UMo-Al (Fig. 15a). Brittle oxide layer: An oxide layer is present around the UMo particles, the SiRL grows always between the UMo particle and the oxide layer (Fig. 15b). In this case the the SiRL is thin and not homogeneous. As presumed by Ripert et al. [7] it is essential that the oxide layer reveals cracks perpendicular the UMo particle surface to make path for the Si diffusion. Dense oxide layer: In case of a thin (≈1 μm) but compact oxide layer no SiRL is formed even at high Si concentrations inside the matrix (Fig. 15c). The observed effects are pronounced when the thickness of the oxide layer is increased, as shown in Fig. 16: UMo particles covered with a thicker oxide layer (>1 μm) inside an Aluminum matrix with 5 wt%Si (mixed Al-Si powder). The oxide layer is dense at the left side of the particle, no Si can be found there (Fig. 16a). In contrast, the brittle and cracked oxide layer on the right side made path for a Si diffusion but the SiRL is thinner than in the sites where the UMo particle is not covered with an oxide layer. EDX maps at different positions of the sample showed that in general no SiRL forms around UMo particles covered by oxide layers with a thickness greater than 1 μm (Fig. 16b). This behavior is identical for the samples with 5 wt%Si and 7 wt%Si added to the Aluminum matrix (mixed Al-Si powder). Obviously the presence of a (dense) oxide layer hampers the formation of a SiRL. different UXSiY phases with strongly overlapping peaks can be found in the SiRL, these phases are characterized by small sizes of the crystallites (a few tens of nanometers) and/or cell parameter gradients. Two different crystallographic phases have been usually identified: U(Al,Si)3 displaying a small lattice parameter of a0 = 4.16 Å. This indicates that about 40% of the Al lattice sites are occupied by Si atoms. The second phase is isostructural to U3Si54 with a different lattice parameter [59-61]. Although the U-Si-Al phase diagram contains a variety of phases, none of the phases reported in literature [62] could be used to fully refine the measured diagram. Therefore, three different hypotheses are suggested to explain the occurence of this unknown phase: The observed compound consists of two phases: Conventional U3Si5 and USi2, as has been suggested by the authors before [58]. However, only one literature source (Brown et al.) describing the occurrence of USi2 below 450 °C could be found [63,64]. Furthermore, it has not been possible to reproduce the experiments described by Brown et al. Therefore, this hypothesis remains doubtful [59]. The observed phase may be a new unknown phase. For example, a cubic phase with lattice constant a0 = 3.96 Å can be used to refine the observed peaks. This hypothesis can neither be confirmed nor refused based on the existing data. The observed phase can be a U3Si5 variant containing Mo and/or Al atoms. This hypothesis is supported by the authors. Hence in the following sections this structure will be denoted as U3Si5. No traces of SiRL phases are found inside the sample with 2 wt%Si mixed-powder matrix (MAFIA-I-3), all the Si remained inside the matrix. A SiRL is present inside the samples with 2.1 wt%Si alloyed powder matrix (MAFIA-I-4) and 5 wt%Si (MAFIA-I-5) and 7 wt%Si (MAFIA-I-7) mixed powder matrix. However, between 76% and 96% of the Si remained inside the matrix in form of precipitates or Si particles. The SiRL is formed readily when the Si is present inside the matrix in form of precipitates (i.e. Al-Si alloy matrix, MAFIA-I-4 and IRIS-TUM 8502) compared to particles (i.e. Al-Si mixed powder matrix, MAFIA-I-3, MAFIA-I-5 and MAFIA-I-7). This behavior can best be observed on the sample prepared with ground powder and with 2.1 wt%Si alloyed powder matrix (IRIS-TUM-8502): The matrix contains no Si, only SiRL phases are found. Since the sample with 5 wt%Si mixed powder matrix (MAFIA-I-5) has the lowest SiRL fraction but by far the highest UO2 content, it is concluded that the presence of UO2 around the UMo kernels tends to hamper the formation of a SiRL. UMo/Al samples prepared with ground powder contain irregularly shaped UMo kernels. They are in general oxidized and also contain oxide stringers. These samples have a high porosity content of around 8 vol%. In contrast, UMo/Al samples prepared with atomized powder contain spherical UMo kernels. Only the surface of the UMo kernels is oxidized in some cases. Thick oxide layers must be grown intentionally while thinner layers are the result of oxidation during the whole process. The oxide layer is in general brittle and exhibits cracks. The Uranium-oxide content of all examined samples (atomized and ground) varies between 2 and 13 wt%. gamma;-UMo present in the fresh UMo powder destabilizes to transform to an α-U-like phase, U2Mo, and two γ-UMo phases with different Mo content during the fuel plate production. For ground powder, α-U content varies in 28-38 wt%, for atomized powder in 11-14 wt%. The degree of γ-phase destabilization is therefore higher for ground powder. Ternary addition of Nb, Ti or Pt to the UMo did not impact the extent of decomposition. The γ-phase decomposition in the atomized and ground powder does not follow the expected in the U8wt%Mo TTT diagram between 400 and 450 °C [41]. According to Repas et al. [65], the route is γ-UMoa → γ-UMob + α-U → γ-UMoc+α-U + U2Mo . γ-UMoa,b,c differ in the Mo content where γ-UMoa has the lowest and γ-UMoc has the highest Mo content. We observe a new route of decomposition of ground powder into two different γ-UMo phases. One of them has approximately the original Mo content and the other has a higher Mo content. Further U2Mo and a phase with deformed lattice parameters compared to pure α-U have been observed. The latter is known as α' in literature.For atomized powder, also two different γ-UMo phases and traces of U2Mo have been found. However, a different α-U like phase has been identified: α″ [41,53-55].Repas et al. used as cast samples that have been examined with conventional XRD and different metallographic methods [65]. The difference to our data can be explained by the superior resolution of the here used HE-XRD diffraction. Most probably, conventional lab X-ray sourcces could not resolve fine differences in the lattice parameters of α-U and may not enable to separate two γ-UMo phase. To overcome this uncertainty it is highly desirable to examine the TTT diagram of UMo with high resolution. When Si is added into the matrix - by using alloyed Al-Si powder as a matrix or blending Al and Si powder - in general a SiRL is formed at the interface between the UMo and the Al matrix. An exception can be found in MAFIA-I-3 in which the overall Si content was to low to form a SiRL. The SiRL consists of U(Al,Si)3 and U3Si5. The SiRL forms less readily in case of mixed Al-Si than in case of alloyed Al-Si powder. In the latter case (MAFIA-I-4), a Si depleted zone has been observed around the UMo particles. For ground powder in combination with an Al-Si alloyed matrix, the entire Si from the matrix has reacted with the UMo forming SiRL phases. The presence of a dense oxide layer around the UMo kernels can prevent the formation of a SiRL. However, as soon as the oxide layer is cracked a SiRL forms between the UMo and the oxide layer. A dense oxide layer isolates the UMo from the Si inside the matrix and occurring cracks make path for the diffusion of Si towards the UMo. U3Si 5 is also called USi2-x or USi1.66 in literature.

Bandgap control and optical properties of β-Si3N4 by single- and co-doping from a first-principles simulation

NASA Astrophysics Data System (ADS)

Lu, Xuefeng; Gao, Xu; Ren, Junqiang; Li, Cuixia; Guo, Xin; Wei, Yupeng; La, Peiqing

2018-06-01

Bandgap tailoring of β-Si3N4 is performed by single and co-doping by using density functional theory (DFT) of PBE functional and plane-wave pseudopotential method. The results reveal that a direct bandgap transfers into an indirect one when single-doped with As element. Also, a considerate decrease of bandgap to 0.221 eV and 0.315 eV is present for Al-P and As-P co-doped systems, respectively, exhibiting a representative semiconductor property that is characteristic for a narrower bandgap. Compared with other doped systems, Al-doped system with formation energy of 2.67 eV is present for a more stable structure. From charge density difference (CDD) maps, it is found that the blue area between co-doped atoms increases, illustrating an enhancement of covalent property for Al-P and Al-As bonds. Moreover, a slightly obvious “Blue shift” phenomenon can be obtained in Al, Al-P and Al-As doped systems, indicating an enhanced capacity of responses to light, which contributes to the insight for broader applications with regard to photoelectric devices.

Influence of Lanthanum on Solidification, Microstructure, and Mechanical Properties of Eutectic Al-Si Piston Alloy

NASA Astrophysics Data System (ADS)

Ahmad, R.; Asmael, M. B. A.

2016-07-01

The effects of Lanthanum (La) concentration on the solidification parameters of the α-Al, Al-Si, and Al-Cu phases and on the microstructure, tensile, and hardness properties of eutectic Al-Si-Cu-Mg alloy were systematically investigated. The solidification parameters were examined using computer-aided cooling curve thermal analysis (CA-CCTA). The cooling curve and microstructure analysis showed that La altered the Si structure. The nucleation and growth temperatures of eutectic Si decreased when 0.3 wt.% La was added, and a high depression temperature was obtained with 1.0 wt.% La. High amounts of La considerably modified the Si structure and decreased the area and aspect ratio by 69.9 and 51%, respectively. The thermal analysis result recorded a faster freezing time with the La addition and a 36% alteration in the secondary dendrite arm spacing. Two secondary or ternary La-rich intermetallic phases were formed with needle- and plate-like structures. Furthermore, the mechanical properties were investigated by hardness and tensile tests with different La concentrations. The addition of small amounts of La (0.1 wt.%) significantly improved the ultimate tensile strength and quality index of the Al-Si-Cu-Mg alloy. In addition, the hardness value of Al-11Si-Cu increased by 7-8% with the increasing amount of La added.

Comparison of dry sliding wear and friction behavior of Al6061/SiC PMMC with Al6061 alloy

NASA Astrophysics Data System (ADS)

Murthy, A. G. Shankara; Mehta, N. K.; Kumar, Pradeep

2018-04-01

Dry sliding wear and friction behavior tests were conducted on Al6061 alloy and Al6061/SiC particle reinforced metal matrix composites (PMMCs) reinforced with fine particles of 5, 10 and 15 µm size having 5,7.5 and 10% weight content fabricated by stir-casting route. Cylindrical sample pins produced as per ASTM standard were tested for various parameters like SiC size, weight content, load and sliding distance affecting the wear rate or resistance and friction. Results indicated that Al6061/SiCp composites exhibited good wear resistance compared to Al6061 alloy for the tested parameters.

On local structural changes in lizardite-1 T: {Si4+/Al3+}, {Si4+/Fe3+}, [Mg2+/Al3+], [Mg2+/Fe3+] substitutions

NASA Astrophysics Data System (ADS)

Scholtzová, Eva; Smrčok, Ľubomír

2005-09-01

Geometrical changes induced by cation substitutions {Si4+/Al3+}[Mg2+/Al3+], {2Si4+/2Al3+} [2Mg2+/2Al3+], {Si4+/Fe3+} [Mg2+/Al3+] or [Mg2+/Fe3+], where {} and [] indicate tetrahedral and octahedral sheet in lizardite 1 T, are studied by ab-initio quantum chemistry calculations. The majority of the models are based on the chemical compositions reported for various lizardite polytypes with the amount of Al in the tetrahedral sheets reported to vary from 3.5% to 8% in the 1 T and 2 H 1, up to 30% in the 2 H 2 polytype. Si4+ by Fe3+ substitution in the tetrahedral sheet with an Al3+ (Fe3+) in the role of a charge compensating cation in the octahedral sheet is also examined. The cation substitutions result in the geometrical changes in the tetrahedral sheets, while the octahedral sheets remain almost untouched. Substituted tetrahedra are tilted and their basal oxygens pushed down from the plane of basal oxygens. Ditrigonal deformation of tetrahedral sheets depends on the substituting cation and the degree of substitution.

A preliminary research on the mechanical properties of TiAl + Ti{sub 5}Si{sub 3} dual phase alloys

DOE Office of Scientific and Technical Information (OSTI.GOV)

Zhang, L.; Qiu, G.; Wu, J.

A sufficient Si addition to TiAl matrix has led to TiAl + Ti{sub 5}Si{sub 3} dual phase alloys, showing coupled-growth microstructure. Compression tests at R.T. as well as high temp indicated that the yield stress increased with increasing Ti{sub 5}Si{sub 3} volume fraction, and decreased at higher temperature. The reinforcement from Ti{sub 5}Si{sub 3} phase was obvious while high Si and Al contents resulted in low ductility. The fracture surfaces were quasi-cleavage. Further research should concern with the adjustment of the shape and amount of the second phase.

Influence of Cu on modifying the beta phase and enhancing the mechanical properties of recycled Al-Si-Fe cast alloys.

PubMed

Basak, C B; Babu, N Hari

2017-07-18

High iron impurity affects the castability and the tensile properties of the recycled Al-Si alloys due to the presence of the Fe containing intermetallic β-Al 9 Fe 2 Si 2 phase. To date only Mn addition is known to transform the β-Al 9 Fe 2 Si 2 phase in the Al-Si-Fe system. However, for the first time, as reported here, it is shown that β-phase transforms to the ω-Al 7 Cu 2 Fe phase in the presence of Cu, after solutionization at 793 K. The ω-phase decomposes below 673 K resulting into the formation of θ-Al 2 Cu phase. However, the present thermodynamic description of the Al-Si-Fe-Cu system needs finer tuning to accurately predict the stability of the ω-phase in these alloys. In the present study, an attempt was made to enhance the strength of Al-6wt%Si-2wt%Fe model recycled cast alloy with different amount of Cu addition. Microstructural and XRD analysis were carried out in detail to show the influence of Cu and the stability range of the ω-phase. Tensile properties and micro-hardness values are also reported for both as-cast and solutionized alloys with different amount of Cu without and with ageing treatment at 473 K. The increase in strength due to addition of Cu, in Fe-rich Al-Si alloys is promising from the alloy recyclability point of view.

The mineral phase evolution behaviour in the production of glass-ceramics from municipal solid waste incineration fly ash by melting technology.

PubMed

Luan, Jingde; Chai, Meiyun; Li, Rundong; Yao, Pengfei; Khan, Agha Saood

2016-01-01

High energy consumption was the major obstacle to the widespread application of melting technology in the treatment of municipal solid waste incineration fly ash. Aiming to lower the ash-melting temperature (AMT) for energy-saving, differential scanning calorimetry, X-ray diffraction and the scanning electron microscope were used to investigate the relations between AMT and the mineral evolution. The results indicated that the change of AMT was determined by the types and the contents of mineral crystals. The transition from refractory minerals to fluxing minerals was the key. The transition of the main crystalline phase from pseudowollastonite (Ca3(Si3O9)) to wollastonite (CaSiO3) played a significant role in AMT reduction. A quantum chemistry calculation was carried out to investigate the effect of crystal reaction activity on AMT. In the chemical reaction, the highest occupied molecular orbital and the lowest unoccupied molecular orbital played a more important role than any other orbits. Cations (Ca(2+), Mg(2+), Na(+), K(+)) were apt to enter into the crystal lattice of wollastonite and gehlenite mainly through Si (3), O (1), Si (6), O (10) and Al (2), O (10), and broke the covalent bonds of Si (3)-O (7), Al (1)-O (9) and Al (1)-O (15), respectively. This deconstruction behaviour provided convenient conditions for restructuring and promoted the formation of fluxing minerals. In melts, the excess SiO2 monomers which existed in the form of cristobalite and quartz caused AMT increase.

Contact Behavior of Composite CrTiSiN Coated Dies in Compressing of Mg Alloy Sheets under High Pressure

PubMed Central

Yang, T.S.; Yao, S.H.; Chang, Y.Y.; Deng, J.H.

2018-01-01

Hard coatings have been adopted in cutting and forming applications for nearly two decades. The major purpose of using hard coatings is to reduce the friction coefficient between contact surfaces, to increase strength, toughness and anti-wear performance of working tools and molds, and then to obtain a smooth work surface and an increase in service life of tools and molds. In this report, we deposited a composite CrTiSiN hard coating, and a traditional single-layered TiAlN coating as a reference. Then, the coatings were comparatively studied by a series of tests. A field emission SEM was used to characterize the microstructure. Hardness was measured using a nano-indentation tester. Adhesion of coatings was evaluated using a Rockwell C hardness indentation tester. A pin-on-disk wear tester with WC balls as sliding counterparts was used to determine the wear properties. A self-designed compression and friction tester, by combining a Universal Testing Machine and a wear tester, was used to evaluate the contact behavior of composite CrTiSiN coated dies in compressing of Mg alloy sheets under high pressure. The results indicated that the hardness of composite CrTiSiN coating was lower than that of the TiAlN coating. However, the CrTiSiN coating showed better anti-wear performance. The CrTiSiN coated dies achieved smooth surfaces on the Mg alloy sheet in the compressing test and lower friction coefficient in the friction test, as compared with the TiAlN coating. PMID:29316687

Contact Behavior of Composite CrTiSiN Coated Dies in Compressing of Mg Alloy Sheets under High Pressure.

PubMed

Yang, T S; Yao, S H; Chang, Y Y; Deng, J H

2018-01-08

Hard coatings have been adopted in cutting and forming applications for nearly two decades. The major purpose of using hard coatings is to reduce the friction coefficient between contact surfaces, to increase strength, toughness and anti-wear performance of working tools and molds, and then to obtain a smooth work surface and an increase in service life of tools and molds. In this report, we deposited a composite CrTiSiN hard coating, and a traditional single-layered TiAlN coating as a reference. Then, the coatings were comparatively studied by a series of tests. A field emission SEM was used to characterize the microstructure. Hardness was measured using a nano-indentation tester. Adhesion of coatings was evaluated using a Rockwell C hardness indentation tester. A pin-on-disk wear tester with WC balls as sliding counterparts was used to determine the wear properties. A self-designed compression and friction tester, by combining a Universal Testing Machine and a wear tester, was used to evaluate the contact behavior of composite CrTiSiN coated dies in compressing of Mg alloy sheets under high pressure. The results indicated that the hardness of composite CrTiSiN coating was lower than that of the TiAlN coating. However, the CrTiSiN coating showed better anti-wear performance. The CrTiSiN coated dies achieved smooth surfaces on the Mg alloy sheet in the compressing test and lower friction coefficient in the friction test, as compared with the TiAlN coating.

Towards the development of new phosphors with reduced content of rare earth elements: Structural and optical characterization of Ce:Tb: Al{sub 2}SiO{sub 5}

DOE Office of Scientific and Technical Information (OSTI.GOV)

Chiriu, D.; Stagi, L.; Carbonaro, C.M.

2016-05-15

Highlights: • A new promising inert matrix as host of luminescent ions is proposed. • Al2SiO5 matrix is free from Rare earths (critical raw materials). • Doping the matrix with Ce and Tb we obtain an efficient green emitter. • Cerium acts as sensitizer for Terbium emission. - Abstract: A new promising inert matrix as host of luminescent ions is proposed. Al2SiO5 samples, doped with rare earths (Ce, Tb single doped and co-doped) are proposed as good prospect for the development of new UV–vis converter with reduced content of rare earths elements. Structural characterization by Raman, XRD spectroscopy and TEMmore » imaging reveals the sillimanite phase and nano sized dimension of the investigated powders. Optical characterization by steady time and time resolved emission spectroscopy for the single doped and co-doped samples allows to identify an efficient energy transfer from Ce to Tb ions under near UV excitation wavelength. The intense green emission observed in the Ce:Tb co-doped Al2SiO5 system suggests its potential application as efficient blue pumped green emitter phosphor to be exploited for white LED: to this purpose we tested the compound in combination with a red emitting doping ion recording for Ce:Tb:Cr:ASO system a correlated color temperature of 6720 K.« less

Transport and retention of engineered Al2O3, TiO2, and SiO2 nanoparticles through various sedimentary rocks

PubMed Central

Esfandyari Bayat, Ali; Junin, Radzuan; Shamshirband, Shahaboddin; Tong Chong, Wen

2015-01-01

Engineered aluminum oxide (Al2O3), titanium dioxide (TiO2), and silicon dioxide (SiO2) nanoparticles (NPs) are utilized in a broad range of applications; causing noticeable quantities of these materials to be released into the environment. Issues of how and where these particles are distributed into the subsurface aquatic environment remain as major challenges for those in environmental engineering. In this study, transport and retention of Al2O3, TiO2, and SiO2 NPs through various saturated porous media were investigated. Vertical columns were packed with quartz-sand, limestone, and dolomite grains. The NPs were introduced as a pulse suspended in aqueous solutions and breakthrough curves in the column outlet were generated using an ultraviolet-visible spectrophotometer. It was found that Al2O3 and TiO2 NPs are easily transported through limestone and dolomite porous media whereas NPs recoveries were achieved two times higher than those found in the quartz-sand. The highest and lowest SiO2-NPs recoveries were also achieved from the quartz-sand and limestone columns, respectively. The experimental results closely replicated the general trends predicted by the filtration and DLVO calculations. Overall, NPs mobility through a porous medium was found to be strongly dependent on NP surface charge, NP suspension stability against deposition, and porous medium surface charge and roughness. PMID:26373598

Microstructures and growth mechanisms of GaN films epitaxially grown on AlN/Si hetero-structures by pulsed laser deposition at different temperatures

PubMed Central

Wang, Wenliang; Yang, Weijia; Lin, Yunhao; Zhou, Shizhong; Li, Guoqiang

2015-01-01

2 inch-diameter GaN films with homogeneous thickness distribution have been grown on AlN/Si(111) hetero-structures by pulsed laser deposition (PLD) with laser rastering technique. The surface morphology, crystalline quality, and interfacial property of as-grown GaN films are characterized in detail. By optimizing the laser rastering program, the ~300 nm-thick GaN films grown at 750 °C show a root-mean-square (RMS) thickness inhomogeneity of 3.0%, very smooth surface with a RMS surface roughness of 3.0 nm, full-width at half-maximums (FWHMs) for GaN(0002) and GaN(102) X-ray rocking curves of 0.7° and 0.8°, respectively, and sharp and abrupt AlN/GaN hetero-interfaces. With the increase in the growth temperature from 550 to 850 °C, the surface morphology, crystalline quality, and interfacial property of as-grown ~300 nm-thick GaN films are gradually improved at first and then decreased. Based on the characterizations, the corresponding growth mechanisms of GaN films grown on AlN/Si hetero-structures by PLD with various growth temperatures are hence proposed. This work would be beneficial to understanding the further insight of the GaN films grown on Si(111) substrates by PLD for the application of GaN-based devices. PMID:26563573

CVD of SiC and AlN using cyclic organometallic precursors

NASA Technical Reports Server (NTRS)

Interrante, L. V.; Larkin, D. J.; Amato, C.

1992-01-01

The use of cyclic organometallic molecules as single-source MOCVD precursors is illustrated by means of examples taken from our recent work on AlN and SiC deposition, with particular focus on SiC. Molecules containing (AlN)3 and (SiC)2 rings as the 'core structure' were employed as the source materials for these studies. The organoaluminum amide, (Me2AlNH2)3, was used as the AlN source and has been studied in a molecular beam sampling apparatus in order to determine the gas phase species present in a hot-wall CVD reactor environment. In the case of SiC CVD, a series of disilacyclobutanes (Si(XX')CH2)2 (with X and X' = H, CH3, and CH2SiH2CH3), were examined in a cold-wall, hot-stage CVD reactor in order to compare their relative reactivities and prospective utility as single-source CVD precursors. The parent compound, disilacyclobutane, (SiH2CH2)2, was found to exhibit the lowest deposition temperature (ca. 670 C) and to yield the highest purity SiC films. This precursor gave a highly textured, polycrystalline film on the Si(100) substrates.

Long-Term Fertilization Modifies the Structures of Soil Fulvic Acids and Their Binding Capability with Al

PubMed Central

Wu, Jun; Wu, Minjie; Li, Chunping; Yu, Guanghui

2014-01-01

The binding characteristics of organic ligands and minerals in fulvic acids (FAs) with Al are essential for understanding soil C sequestration, remain poorly understood. In this study, Fourier transform infrared (FTIR) spectroscopy combined with two-dimensional correlation spectroscopy (2DCOS) analysis was applied for the first time to explore the binding of Al with organic ligands and minerals in soil FAs. For these analyses, two contrasting treatments were selected from a long-term (i.e., 22-year) fertilization experiment: chemical (NPK) fertilization and swine manure (SM) fertilization. The results showed that the long-term application of organic and inorganic fertilizers to soils had little effect on the compositions of the fluorescent substances and organic ligands in the soil FAs. However, long-term SM fertilization increased the weathered Al and Si concentrations in the soil FAs compared with long-term chemical fertilization. Furthermore, organic ligands in the soil FAs were mainly bound with Al in the NPK treatment, whereas both organic ligands and minerals (Al-O-Si, Si-O) were bound with Al under the M fertilization conditions. Both transmission electron microscopy (TEM) images and X-ray diffraction spectra demonstrated that amorphous and short-range-ordered nanominerals were abundant in the soil FAs from the SM plot in contrast to the soil FAs from the NPK plot. This result illustrates the role nanominerals play in the preservation of soil FAs by during long-term organic fertilization. In summary, the combination of FTIR and 2D correlation spectroscopy is a promising approach for the characterization of the binding capability between soil FAs and Al, and a better understanding FA-Al binding capability will greatly contribute to global C cycling. PMID:25137372

[Studies on high temperature oxidation of noble metal alloys for dental use. (III) On high temperature oxidation resistance of noble metal alloys by adding small amounts of alloying elements. (author's transl)].

PubMed

Ohno, H

1976-11-01

The previous report pointed out the undesirable effects of high temperature oxidation on the casting. The influence of small separate additions of Zn, Mg, Si, Be and Al on the high temperature oxidation of the noble metal alloys was examined. These alloying elements were chosen because their oxide have a high electrical resistivity and they have much higher affinity for oxygen than Cu. The casting were oxidized at 700 degrees C for 1 hour in air. The results obtained were as follows: 1. The Cu oxides are not observed on the as-cast surface of noble metal alloys containing small amounts of Zn, Mg, Si, Be, and Al. The castings have gold- or silver-colored surface. 2. After heating of the unpolished and polished castings, the additions of Si, Be and Al are effective in preventing oxidation of Cu in the 18 carats gold alloys. Especially the golden surface is obtained by adding Be and Al. But there is no oxidation-resistance on the polished castings in the alloys containing Zn and Mg. 3. The zinc oxide film formed on the as-cast specimen is effective in preventing of oxidation Cu in 18 carats gold alloys. 4. It seems that the addition of Al is most available in dental application.

Effect of micro-structural modifier on the morphology of silicon rich secondary phase and strain hardening behavior of eutectic Al-Si alloy

NASA Astrophysics Data System (ADS)

Mansoor, M.; Salam, I.; Tauqir, A.

2016-08-01

Eutectic Al-Si alloys find their applications in moderate to severe tribological conditions, for example: pistons, casings of high speed pumps and slide sleeves. The higher hardness, so the better tribological properties, are originated by the formation of a silicon rich secondary phase, however, the morphology of the secondary phase drastically influence the toughness of the alloy. Microstructural modifiers are used to control the toughness which modifies the Si rich secondary phase into dispersed spherical structure instead of needle-like network. In the present study, a mixture of chemical fluxes was used to modify the Si phase. The alloy was cast into a sand mold and characterized by scanning electron microscopy, energy dispersive spectroscopy, hardness testing and tensile testing. It was found that the morphology of the Si phase was altered to acicular structure due to the modification process. In comparison, the un-modified alloy contained Si phase in needle-like structure. The effect of modifier was also pronounced on the mechanical properties, where increase of 50% in yield strength, 56% in tensile strength and 200% in elongation occurred. A discernable raise in strain hardening component indicated the improved strain harden ability and formability of the modified alloy.

Preparation and characterization of aluminium-silica metal matrix composite

NASA Astrophysics Data System (ADS)

Mallikarjuna, G. B.; Basavaraj, E.

2018-04-01

Aluminum alloys are widely used in aerospace and automobile industries due to their low density and good mechanical properties, better corrosion resistance and wear, low thermal coefficient of expansion as compared to conventional metals and alloys. The excellent properties of these materials and relatively low production cost make them a very attractive for a variety of applications. In this present work, Al alloy LM13-SiO2 composites were produced by stir casting method. The reinforcement SiO2 particle size used for preparation of composites are 106 µm, 150 µm, 250 µm and 355 µm with varying amount of 3 to 12 wt% in steps of 3. The prepared composite specimens were machined as per test standards. Effects of weight percentage of SiO2 particles on wear, tensile strength of Al alloy LM13-SiO2 composites have been investigated. The microstructures of the composites were studied to know the dispersion of the SiO2 particles in matrix. Experimental results shows that there is enhanced mechanical properties, when silica weighing 9% was added to the base aluminium alloy and also similar trend exists in all four different micron size of silica and also it has been observed that addition of SiO2 particles significantly improves wear resistance properties as compared with that of unreinforced matrix.

High-Strength Ultra-Fine-Grained Hypereutectic Al-Si-Fe-X (X = Cr, Mn) Alloys Prepared by Short-Term Mechanical Alloying and Spark Plasma Sintering.

PubMed

Průša, Filip; Bláhová, Markéta; Vojtěch, Dalibor; Kučera, Vojtěch; Bernatiková, Adriana; Kubatík, Tomáš František; Michalcová, Alena

2016-11-30

In this work, Al-20Si-10Fe-6Cr and Al-20Si-10Fe-6Mn (wt %) alloys were prepared by a combination of short-term mechanical alloying and spark plasma sintering. The microstructure was composed of homogeneously dispersed intermetallic particles forming composite-like structures. X-ray diffraction analysis and TEM + EDS analysis determined that the α-Al along with α-Al 15 (Fe,Cr)₃Si₂ or α-Al 15 (Fe,Mn)₃Si₂ phases were present, with dimensions below 130 nm. The highest hardness of 380 ± 7 HV5 was observed for the Al-20Si-10Fe-6Mn alloy, exceeding the hardness of the reference as-cast Al-12Si-1Cu-1 Mg-1Ni alloy (121 ± 2 HV5) by nearly a factor of three. Both of the prepared alloys showed exceptional thermal stability with the hardness remaining almost the same even after 100 h of annealing at 400 °C. Additionally, the compressive strengths of the Al-20Si-10Fe-6Cr and Al-20Si-10Fe-6Mn alloys reached 869 MPa and 887 MPa, respectively, and had virtually the same values of 870 MPa and 865 MPa, respectively, even after 100 h of annealing. More importantly, the alloys showed an increase in ductility at 400 °C, reaching several tens of percent. Thus, both of the investigated alloys showed better mechanical properties, including superior hardness, compressive strength and thermal stability, as compared to the reference Al-10Si-1Cu-1Mg-1Ni alloy, which softened remarkably, reducing its hardness by almost 50% to 63 ± 8 HV5.

Aluminum-Stabilized Magnesium Diboride Superconductors

NASA Astrophysics Data System (ADS)

Dou, S. X.; Collings, E. W.; Shcherbakova, O.; Shcherbakov, A.

2006-03-01

Use of aluminum as stabilizer and iron as reaction barrier for fabrication of MgB2 superconductor wires was studied. The MgB2/Fe/Al or SiC doped MgB2/Fe/Al composite wires were made using Mg+ 2 B powder or SiC doped Mg+2 B powder in Fe/Al tube technique. The composites were processed at 600°C to 650°C for 30 minutes to 3 hours to study the interaction between Fe and Al sheath and the formation of MgB2. No reaction between Fe and Al was found until annealing temperature at 620°C for 30 minutes. A thin layer of alloy, FeAl3 is formed for samples annealed at 620°C for 90 minutes and the reaction layer increases with increasing annealing temperature. Annealing at 650°C resulted in cracks in the Al sheath. Our results show that the Fe/Al sheathed wires achieved the same performance in magnetic and electrical properties as those using an all-Fe sheath. Comparing with the standard NbTi/Cu conductors, the MgB2/Fe/Al conductor having low structural mass, greater thermal conductivity and high efficient stabilization will make a tremendous difference especially for airborne, aerospace, and other applications when weight is important.

Oxidation of Ca-α-SiAlON Powders Prepared by Combustion Synthesis

PubMed Central

Li, Jinfu; Li, Zhongmin; Wang, Enhui; Wang, Zhanjun; Yin, Xiaowei; Zhang, Zuotai

2015-01-01

The oxidation of Ca-α-SiAlON synthesized by the combustion synthesis (CS) method with different additives was investigated in air atmosphere using thermogravimetric (TG) analysis in a temperature range from 1453 K to 1653 K. The experimental results indicated that oxidation was controlled by mixed chemical and diffusion steps. The oxidation products by XRD analysis were composed of SiO2 and CaAl2Si2O8 at low oxidation temperature, whereas the SiO2-Al2O3-CaO ternary glassy phase was formed at elevated temperature. The deviation of oxidation resistance from each sample may be due to the morphological difference brought about by different additive additions. This study reveals the effects of additives on the oxidation resistance of synthesized Ca-α-SiAlON powders. PMID:28793657

Mixed Al and Si doping in ferroelectric HfO{sub 2} thin films

DOE Office of Scientific and Technical Information (OSTI.GOV)

Lomenzo, Patrick D.; Nishida, Toshikazu, E-mail: nishida@ufl.edu; Takmeel, Qanit

2015-12-14

Ferroelectric HfO{sub 2} thin films 10 nm thick are simultaneously doped with Al and Si. The arrangement of the Al and Si dopant layers within the HfO{sub 2} greatly influences the resulting ferroelectric properties of the polycrystalline thin films. Optimizing the order of the Si and Al dopant layers led to a remanent polarization of ∼20 μC/cm{sup 2} and a coercive field strength of ∼1.2 MV/cm. Post-metallization anneal temperatures from 700 °C to 900 °C were used to crystallize the Al and Si doped HfO{sub 2} thin films. Grazing incidence x-ray diffraction detected differences in peak broadening between the mixed Al and Si doped HfO{submore » 2} thin films, indicating that strain may influence the formation of the ferroelectric phase with variations in the dopant layering. Endurance characteristics show that the mixed Al and Si doped HfO{sub 2} thin films exhibit a remanent polarization greater than 15 μC/cm{sup 2} up to 10{sup 8} cycles.« less

Processes and applications of silicon carbide nanocomposite fibers

NASA Astrophysics Data System (ADS)

Shin, D. G.; Cho, K. Y.; Jin, E. J.; Riu, D. H.

2011-10-01

Various types of SiC such as nanowires, thin films, foam, and continuous fibers have been developed since the early 1980s, and their applications have been expanded into several new applications, such as for gas-fueled radiation heater, diesel particulate filter (DPF), ceramic fiber separators and catalyst/catalyst supports include for the military, aerospace, automobile and electronics industries. For these new applications, high specific surface area is demanded and it has been tried by reducing the diameter of SiC fiber. Furthermore, functional nanocomposites show potentials in various harsh environmental applications. In this study, silicon carbide fiber was prepared through electrospinning of the polycarbosilane (PCS) with optimum molecular weight distribution which was synthesized by new method adopting solid acid catalyst such as ZSM-5 and γ-Al2O3. Functional elements such as aluminum, titanium, tungsten and palladium easily doped in the precursor fiber and remained in the SiC fiber after pyrolysis. The uniform SiC fibers were produced at the condition of spinning voltage over 20 kV from the PCS solution as the concentration of 1.3 g/ml in DMF/Toluene (3:7) and pyrolysis at 1200°C. Pyrolyzed products were processed into several interesting applications such as thermal batteries, hydrogen sensors and gas filters.

Method of Preparing Monoclinic BaO.Al2O3.2SiO2

DTIC Science & Technology

Monoclinic celsian (BaO.Al2O3.2SiO2) is produced by heating a stoichiometric, powder mixture of BaCO3 (or BaC2O4), Al2O3, and SiO2 (preferably SiO2 gel) with monoclinic celsian seeds at from 1250 deg C to 1500 deg C.

FEM Analysis of Sezawa Mode SAW Sensor for VOC Based on CMOS Compatible AlN/SiO₂/Si Multilayer Structure.

PubMed

Aslam, Muhammad Zubair; Jeoti, Varun; Karuppanan, Saravanan; Malik, Aamir Farooq; Iqbal, Asif

2018-05-24

A Finite Element Method (FEM) simulation study is conducted, aiming to scrutinize the sensitivity of Sezawa wave mode in a multilayer AlN/SiO₂/Si Surface Acoustic Wave (SAW) sensor to low concentrations of Volatile Organic Compounds (VOCs), that is, trichloromethane, trichloroethylene, carbon tetrachloride and tetrachloroethene. A Complimentary Metal-Oxide Semiconductor (CMOS) compatible AlN/SiO₂/Si based multilayer SAW resonator structure is taken into account for this purpose. In this study, first, the influence of AlN and SiO₂ layers’ thicknesses over phase velocities and electromechanical coupling coefficients ( k ²) of two SAW modes (i.e., Rayleigh and Sezawa) is analyzed and the optimal thicknesses of AlN and SiO₂ layers are opted for best propagation characteristics. Next, the study is further extended to analyze the mass loading effect on resonance frequencies of SAW modes by coating a thin Polyisobutylene (PIB) polymer film over the AlN surface. Finally, the sensitivity of the two SAW modes is examined for VOCs. This study concluded that the sensitivity of Sezawa wave mode for 1 ppm of selected volatile organic gases is twice that of the Rayleigh wave mode.

Pressure induced coordination change of Al in silicate melts from Al K edge XANES of high pressure NaAlSi2O6-NaAlSi3O8 glasses

NASA Astrophysics Data System (ADS)

Li, Dien; Secco, R. A.; Bancroft, G. M.; Fleet, M. E.

Aluminum K-edge XANES spectra of high pressure and high temperature (4.4 GPa and 1575°C) glasses along the NaAlSi2O6 (Jd)-NaAlSi3O8 (Ab) join are reported using synchrotron radiation, and shown to provide direct experimental evidence for the pressure-induced coordination change of Al. Five- and six-fold coordinated Al (5Al and 6Al), characterized by Al K-edge positions at 1567.8 and 1568.7 eV, respectively, first appear in glass of composition Jd60Ab40 and increase in proportion progressively with increasing Jd content. The end-member jadeite glass contains about 6% of each of 5Al and 6Al. The present direct measurements confirm literature suggestions for the important role of Al in controlling viscosity and diffusion in mantle melts.

Astrophysics with Presolar Stardust

NASA Astrophysics Data System (ADS)

Clayton, Donald D.; Nittler, Larry R.

2004-09-01

Meteorites and interplanetary dust particles contain presolar stardust grains: solid samples of stars that can be studied in the laboratory. The stellar origin of the grains is indicated by enormous isotopic ratio variations compared with Solar System materials, explainable only by nuclear reactions occurring in stars. Known presolar phases include diamond, SiC, graphite, Si3N4, Al2O3, MgAl2O4, CaAl12O19, TiO2, Mg(Cr,Al)2O4, and most recently, silicates. Subgrains of refractory carbides (e.g., TiC), and Fe-Ni metal have also been observed within individual presolar graphite grains. We review the astrophysical implications of these grains for the sciences of nucleosynthesis, stellar evolution, grain condensation, and the chemical and dynamic evolution of the Galaxy. Unique scientific information derives primarily from the high precision (in some cases <1%) of the measured isotopic ratios of large numbers of elements in single stardust grains. Stardust science is just now reaching maturity and will play an increasingly important role in nucleosynthesis applications.

Low-temperature heat capacities of CaAl2SiO6 glass and pyroxene and thermal expansion of CaAl2SiO6 pyroxene.

USGS Publications Warehouse

Haselton, H.T.; Hemingway, B.S.; Robie, R.A.

1984-01-01

Low-T heat capacities (5-380 K) have been measured by adiabatic calorimetry for synthetic CaAl2SiO6 glass and pyroxene. High-T unit cell parameters were measured for CaAl2SiO6 pyroxene by means of a Nonius Guinier-Lenne powder camera in order to determine the mean coefficient of thermal expansion in the T range 25-1200oC. -J.A.Z.

A quick method for AlCu interconnect electromigration performance predicting and monitoring

NASA Astrophysics Data System (ADS)

Zhang, Wenjie; Yi, Leeward; Tao, Kai; Ma, Yue; Chang, Pingyi; Mao, Duli; Wu, Jin; Zou, S. C.

2006-05-01

The film properties and microstructures of (bottom)Si/SiO2/Ti(top) and (bottom)Si/SiO2/Ti/TiN/AlCu(top) stacks deposited by different processes were characterized. The resistivities of thin Ti films and the reflectivities of AlCu alloy films were found to correlate with the microstructure as well as the mean time to failure (MTTF) in the electromigration (EM) test. A quick-turn monitor for AlCu interconnect reliability in the semiconductor manufacturing industry was established.

Novel Alleviation Mechanisms of Aluminum Phytotoxicity via Released Biosilicon from Rice Straw-Derived Biochars

PubMed Central

Qian, Linbo; Chen, Baoliang; Chen, Mengfang

2016-01-01

Replacing biosilicon and biocarbon in soil via biochar amendment is a novel approach for soil amelioration and pollution remediation. The unique roles of silicon (Si)-rich biochar in aluminum (Al) phytotoxicity alleviation have not been discovered. In this study, the alleviation of Al phytotoxicity to wheat plants (root tips cell death) by biochars fabricated from rice straw pyrolyzed at 400 and 700 °C (RS400 and RS700) and the feedstock (RS100) were studied using a slurry system containing typical acidic soils for a 15-day exposure experiment. The distributions of Al and Si in the slurry solution, soil and plant root tissue were monitored by staining methods, chemical extractions and SEM-EDS observations. We found that the biological sourced silicon in biochars served dual roles in Al phytotoxicity alleviation in acidic soil slurry. On one hand, the Si particles reduced the amount of soil exchangeable Al and prevented the migration of Al to the plant. More importantly, the Si released from biochars synchronously absorbed by the plants and coordinated with Al to form Al-Si compounds in the epidermis of wheat roots, which is a new mechanism for Al phytotoxicity alleviation in acidic soil slurry by biochar amendment. In addition, the steady release of Si from the rice straw-derived biochars was a sustainable Si source for aluminosilicate reconstruction in acidic soil. PMID:27385598

Novel Alleviation Mechanisms of Aluminum Phytotoxicity via Released Biosilicon from Rice Straw-Derived Biochars

NASA Astrophysics Data System (ADS)

Qian, Linbo; Chen, Baoliang; Chen, Mengfang

2016-07-01

Replacing biosilicon and biocarbon in soil via biochar amendment is a novel approach for soil amelioration and pollution remediation. The unique roles of silicon (Si)-rich biochar in aluminum (Al) phytotoxicity alleviation have not been discovered. In this study, the alleviation of Al phytotoxicity to wheat plants (root tips cell death) by biochars fabricated from rice straw pyrolyzed at 400 and 700 °C (RS400 and RS700) and the feedstock (RS100) were studied using a slurry system containing typical acidic soils for a 15-day exposure experiment. The distributions of Al and Si in the slurry solution, soil and plant root tissue were monitored by staining methods, chemical extractions and SEM-EDS observations. We found that the biological sourced silicon in biochars served dual roles in Al phytotoxicity alleviation in acidic soil slurry. On one hand, the Si particles reduced the amount of soil exchangeable Al and prevented the migration of Al to the plant. More importantly, the Si released from biochars synchronously absorbed by the plants and coordinated with Al to form Al-Si compounds in the epidermis of wheat roots, which is a new mechanism for Al phytotoxicity alleviation in acidic soil slurry by biochar amendment. In addition, the steady release of Si from the rice straw-derived biochars was a sustainable Si source for aluminosilicate reconstruction in acidic soil.

The Effectiveness of Al-Si Coatings for Preventing Interfacial Reaction in Al-Mg Dissimilar Metal Welding

NASA Astrophysics Data System (ADS)

Wang, Yin; Al-Zubaidy, Basem; Prangnell, Philip B.

2018-01-01

The dissimilar welding of aluminum to magnesium is challenging because of the rapid formation of brittle intermetallic compounds (IMC) at the weld interface. An Al-Si coating interlayer was selected to address this problem, based on thermodynamic calculations which predicted that silicon would change the reaction path to avoid formation of the normally observed binary Al-Mg IMC phases ( β-Al3Mg2 and γ-Al12Mg17). Long-term static heat treatments confirmed that a Si-rich coating will preferentially produce the Mg2Si phase in competition with the less stable, β-Al3Mg2 and γ-Al12Mg17 binary IMC phases, and this reduced the overall reaction layer thickness. However, when an Al-Si clad sheet was tested in a real welding scenario, using the Refill™ friction stir spot welding (FSSW) technique, Mg2Si was only produced in very small amounts owing to the much shorter reaction time. Surprisingly, the coating still led to a significant reduction in the IMC reaction layer thickness and the welds exhibited enhanced mechanical performance, with improved strength and fracture energy. This beneficial behavior has been attributed to the softer coating material both reducing the welding temperature and giving rise to the incorporation of Si particles into the reaction layer, which toughened the brittle interfacial IMC phases during crack propagation.

Effect of the Different High Volume Fraction of SiC Particles on the Junction of Bismuthate Glass-SiCp/Al Composite

PubMed Central

Li, Xiaoqiang

2018-01-01

The in-house developed bismuthate glass and the SiCp/Al composites with different volume fractions of SiC particles (namely, 60 vol.%, 65 vol.%, 70 vol.%, and 75 vol.%) were jointed by vacuum hot-pressing process. The novel material can be used for the space mirror. The SiCp is an abbreviation for SiC particle. Firstly, the SiCp/Al composites with different vol.% of SiC particle were manufactured by using infiltration process. In order to obtain a stable bonding interface, the preoxide layers were fabricated on the surfaces of these composites for reacting with the bismuthate glass. The coefficient of thermal expansion (CTE) was carried out for characterizing the difference between the composites and bismuthate glass. The sealing quality of the composites and the bismuthate glass was quantified by using shear strength testing. The optical microstructures showed the particles were uniformly distributed in the Al matrix. The SEM image shows that a smooth oxidation layer was generated on the SiCp/Al composite. The CTE testing result indicated that the higher the vol.% of the particles in the composite, the lower the CTE value. The shear strength testing result disclosed that SiCp/Al composite with relatively low CTE value was favorable to obtain a bonding interface with high strength. PMID:29675118

Effect of the Different High Volume Fraction of SiC Particles on the Junction of Bismuthate Glass-SiCp/Al Composite.

PubMed

Wang, Bin; Qu, Shengguan; Li, Xiaoqiang

2018-01-01

The in-house developed bismuthate glass and the SiC p /Al composites with different volume fractions of SiC particles (namely, 60 vol.%, 65 vol.%, 70 vol.%, and 75 vol.%) were jointed by vacuum hot-pressing process. The novel material can be used for the space mirror. The SiCp is an abbreviation for SiC particle. Firstly, the SiC p /Al composites with different vol.% of SiC particle were manufactured by using infiltration process. In order to obtain a stable bonding interface, the preoxide layers were fabricated on the surfaces of these composites for reacting with the bismuthate glass. The coefficient of thermal expansion (CTE) was carried out for characterizing the difference between the composites and bismuthate glass. The sealing quality of the composites and the bismuthate glass was quantified by using shear strength testing. The optical microstructures showed the particles were uniformly distributed in the Al matrix. The SEM image shows that a smooth oxidation layer was generated on the SiC p /Al composite. The CTE testing result indicated that the higher the vol.% of the particles in the composite, the lower the CTE value. The shear strength testing result disclosed that SiC p /Al composite with relatively low CTE value was favorable to obtain a bonding interface with high strength.

Materials science, integration, and performance characterization of high-dielectric constant thin film based devices

NASA Astrophysics Data System (ADS)

Fan, Wei

To overcome the oxidation and diffusion problems encountered during Copper integration with oxide thin film-based devices, TiAl/Cu/Ta heterostructure has been first developed in this study. Investigation on the oxidation and diffusion resistance of the laminate structure showed high electrical conductance and excellent thermal stability in oxygen environment. Two amorphous oxide layers that were formed on both sides of the TiAl barrier after heating in oxygen have been revealed as the structure that effectively prevents oxygen penetration and protects the integrity of underlying Cu layer. Polycrystalline (BaxSr1-x)TiO3 (BST) thin films were subsequently deposited on the Cu-based bottom electrode by RF magnetron sputtering to investigate the interaction between the oxide and Cu layers. The thickness of the interfacial layer and interface roughness play critical roles in the optimization of the electrical performance of the BST capacitors using Cu-based electrode. It was determined that BST deposition at moderate temperature followed by rapid thermal annealing in pure oxygen yields BST/Cu capacitors with good electrical properties for application to high frequency devices. The knowledge obtained on the study of barrier properties of TiAl inspired a continuous research on the materials science issues related to the application of the hybrid TiAlOx, as high-k gate dielectric in MOSFET devices. Novel fabrication process such as deposition of ultra-thin TiAl alloy layer followed by oxidation with atomic oxygen has been established in this study. Stoichiometric amorphous TiAlOx layers, exhibiting only Ti4+ and Al3+ states, were produced with a large variation of oxidation temperature (700°C to room temperature). The interfacial SiOx formation between TiAlOx and Si was substantially inhibited by the use of the low temperature oxidation process. Electrical characterization revealed a large permittivity of 30 and an improved band structure for the produced TiAlOx layers, compared with pure TiO2. A modified 3-element model was adopted to extract the true C-V behavior of the TiAlOx-based MOS capacitor. Extremely small equivalent oxide thickness (EOT) less than 0.5 nm with dielectric leakage 4˜5 magnitude lower than that for SiO2 has been achieved on TiAlOx layer as a result of its excellent dielectric properties.

Phase transformation and magnetic properties of MnAl powders prepared by elemental-doping and salt-assisted ball milling

NASA Astrophysics Data System (ADS)

Qian, Hui-Dong; Si, Ping-Zhan; Choi, Chul-Jin; Park, Jihoon; Cho, Kyung Mox

2018-05-01

The effects of elemental doping of Si and Fe on the ɛ→τ phase transformation and the magnetic properties of MnAl were studied. The magnetic powders of Si- and Fe-doped MnAl were prepared by using induction melting followed by water-quenching, annealing, and salt-assisted ball-milling. The Fe-doped MnAl powders are mainly composed of the L10-structured τ-phase, while the Si-doped MnAl are composed of τ-phase and a small fraction of γ2- and β-phases. A unique thin leaves-like morphology with thickness of several tens of nanometers and diameter size up to 500 nm were observed in the Si-doped MnAl powders. The Fe-doped MnAl powders show irregular shape with much larger dimensions in the range from several to 10 μm. The morphology difference of the samples was ascribed to the variation of the mechanical properties affected by different doping elements. The phase transformation temperatures of the ɛ-phase of the samples were measured. The doping of Fe decreases the onset temperature of the massive phase transformation in MnAl, while the Si-doping increases the massive phase transformation temperature. Both Fe and Si increase the Curie temperature of MnAl. A substantially enhanced coercivity up to 0.45 T and 0.42 T were observed in the ball-milled MnAl powders doped with Si and Fe, respectively.

Effect of Si on DC arc plasma generation from Al-Cr and Al-Cr-Si cathodes used in oxygen

NASA Astrophysics Data System (ADS)

Zhirkov, I.; Landälv, L.; Göthelid, E.; Ahlgren, M.; Eklund, P.; Rosen, J.

2017-02-01

Al2O3 alloyed with Cr is an important material for the tooling industry. It can be synthesized from an arc discharge using Al-Cr cathodes in an oxygen atmosphere. Due to formation of Al-rich oxide islands on the cathode surface, the arc process stability is highly sensitive to oxygen pressure. For improved stability, the use of Al0.70Cr0.25Si0.05 cathodes has previously been suggested, where Si may reduce island formation. Here, we have investigated the effect of Si by comparing plasma generation and thin film deposition from Al0.7Cr0.3 and Al0.7Cr0.25Si0.05 cathodes. Plasma ion composition, ion energies, ion charge states, neutral species, droplet formation, and film composition have been characterized at different O2 flow rates for arc currents of 60 and 90 A. Si and related compounds are detected in plasma ions and in plasma neutrals. Scanning electron microscopy and energy dispersive X-ray analysis show that the cathode composition and the film composition are the same, with Si present in droplets as well. The effect of Si on the process stability, ion energies, and ion charge states is found to be negligible compared to that of the arc current. The latter is identified as the most relevant parameter for tuning the properties of the reactive discharge. The present work increases the fundamental understanding of plasma generation in a reactive atmosphere, and provides input for the choice of cathode composition and process parameters in reactive DC arc synthesis.

Silver-Loaded Aluminosilicate Aerogels As Iodine Sorbents

DOE Office of Scientific and Technical Information (OSTI.GOV)

Riley, Brian J.; Kroll, Jared O.; Peterson, Jacob A.

This paper discusses the development of aluminosilicates aerogels as scaffolds for Ag0 nanoparticles used for chemisorption of I2(g). The starting materials for these scaffolds included both Na-Al-Si-O and Al-Si-O aerogels, both synthesized from metal alkoxides. The Ag0 particles are added by soaking the aerogels in AgNO3 followed by drying and flowing under H2/Ar to reduce Ag+ → Ag0. In some cases, samples were soaked in 3-(mercaptopropyl)trimethoxysilane under supercritical CO2 to add –SH tethers to the aerogel surfaces for more effective binding of Ag+. During the Ag+-impregnation steps, for the Na-Al-Si-O aerogels, Na was replaced with Ag, and for the Al-Si-Omore » aerogel, Si was replaced with Ag. The Ag-loading of thiolated versus non-thiolated Na-Al-Si-O aerogels was comparable at ~35 at% whereas the Ag-loading in unthiolated Al-Si-O aerogels was significantly lower at ~ 7 at% after identical treatment. Iodine loadings in both thiolated and unthiolated Ag0-functionalized Na-Al-Si-O aerogels were > 0.5 g g-1 showing almost complete utilization of the Ag through chemisorption to form AgI. Iodine loading in the thiolated Al-Si-O aerogel was 0.31 g g-1. The control of Ag uptake over solution residence time and [AgNO3] demonstrates the ability to customize the Ag-loading in the base sorbent to regulate the capacity of iodine chemisorption. Consolidation experimental results are also presented.« less

Nanostructured glass–ceramic coatings for orthopaedic applications

PubMed Central

Wang, Guocheng; Lu, Zufu; Liu, Xuanyong; Zhou, Xiaming; Ding, Chuanxian; Zreiqat, Hala

2011-01-01

Glass–ceramics have attracted much attention in the biomedical field, as they provide great possibilities to manipulate their properties by post-treatments, including strength, degradation rate and coefficient of thermal expansion. In this work, hardystonite (HT; Ca2ZnSi2O7) and sphene (SP; CaTiSiO5) glass–ceramic coatings with nanostructures were prepared by a plasma spray technique using conventional powders. The bonding strength and Vickers hardness for HT and SP coatings are higher than the reported values for plasma-sprayed hydroxyapatite coatings. Both types of coatings release bioactive calcium (Ca) and silicon (Si) ions into the surrounding environment. Mineralization test in cell-free culture medium showed that many mushroom-like Ca and phosphorus compounds formed on the HT coatings after 5 h, suggesting its high acellular mineralization ability. Primary human osteoblasts attach, spread and proliferate well on both types of coatings. Higher proliferation rate was observed on the HT coatings compared with the SP coatings and uncoated Ti-6Al-4V alloy, probably due to the zinc ions released from the HT coatings. Higher expression levels of Runx2, osteopontin and type I collagen were observed on both types of coatings compared with Ti-6Al-4V alloy, possibly due to the Ca and Si released from the coatings. Results of this study point to the potential use of HT and SP coatings for orthopaedic applications. PMID:21292725

DOE Office of Scientific and Technical Information (OSTI.GOV)

Kang, Joongoo; Park, Ji -Sang; Stradins, Pauls

In this paper, nonequilibrium growth of Si-III-V or Si-II-VI alloys is a promising approach to obtaining optically more active Si-based materials. We propose a new class of nonisovalent Si 2AlP (or Si 2ZnS) alloys in which the Al-P (or Zn-S) atomic chains are as densely packed as possible in the host Si matrix. As a hybrid of the lattice-matched parent phases, Si2AlP (or Si2ZnS) provides an ideal material system with tunable local chemical orders around Si atoms within the same composition and structural motif. Here, using first-principles hybrid functional calculations, we discuss how the local chemical orders affect the electronicmore » and optical properties of the nonisovalent alloys.« less

Preparation of nanocrystalline silicon from SiCl4 at 200 °C in molten salt for high-performance anodes for lithium ion batteries.

PubMed

Lin, Ning; Han, Ying; Wang, Liangbiao; Zhou, Jianbin; Zhou, Jie; Zhu, Yongchun; Qian, Yitai

2015-03-16

Crystalline Si nanoparticles are prepared by reduction of SiCl4 with metallic magnesium in the molten salt of AlCl3 at 200 °C in an autoclave. AlCl3 not only acts as molten salt, but also participates in the reaction. The related experiments confirm that metallic Mg reduces AlCl3 to create nascent Al which could immediately reduce SiCl4 to Si, and the by-product MgCl2 would combine with AlCl3 forming complex of MgAl2Cl8. As anode for rechargeable lithium ion batteries, the as-prepared Si delivers the reversible capacity of 3083 mAh g(-1) at 1.2 A g(-1) after 50 cycles, and 1180 mAh g(-1) at 3 A g(-1) over 500 cycles. © 2015 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Growth of high-quality AlN epitaxial film by optimizing the Si substrate surface

NASA Astrophysics Data System (ADS)

Huang, Liegen; Li, Yuan; Wang, Wenliang; Li, Xiaochan; zheng, Yulin; Wang, Haiyan; Zhang, Zichen; Li, Guoqiang

2018-03-01

High-quality AlN epitaxial films have been grown on Si substrates by optimizing the hydrofluoric acid (HF) solution for cleaning of Si substrates. Effect of the Si substrate surface on the surface morphology and structural property of AlN epitaxial films is investigated in detail. It is revealed that as the concentration of HF solution increases from 0 to 2.0%, the surface morphology and the crystalline quality are initially improved and then get worse, and show an optimized value at 1.5%. The as-grown ∼200 nm-thick AlN epitaxial films on Si substrates grown with HF solution of 1.5% reveal the root-mean-square (RMS) surface roughness of 0.49 nm and the full-width at half-maximum for AlN(0002) X-ray rocking curve of 0.35°, indicating the smooth surface morphology and the high crystalline quality. The corresponding mechanism is proposed to interpret the effect of Si substrate surface on surface morphology and structural property of AlN epitaxial films, and provides an effective approach for the perspective fabrication of AlN-based devices.

Effects of aluminum on epitaxial graphene grown on C-face SiC

DOE Office of Scientific and Technical Information (OSTI.GOV)

Xia, Chao, E-mail: chaxi@ifm.liu.se; Johansson, Leif I.; Hultman, Lars

The effects of Al layers deposited on graphene grown on C-face SiC substrates are investigated before and after subsequent annealing using low energy electron diffraction (LEED), photoelectron spectroscopy, and angle resolved photoemission. As-deposited layers appear inert. Annealing at a temperature of about 400 °C initiates migration of Al through the graphene into the graphene/SiC interface. Further annealing at temperatures from 500 °C to 700 °C induces formation of an ordered compound, producing a two domain √7× √7R19° LEED pattern and significant changes in the core level spectra that suggest formation of an Al-Si-C compound. Decomposition of this compound starts after annealing at 800 °C, andmore » at 1000 °C, Al is no longer possible to detect at the surface. On Si-face graphene, deposited Al layers did not form such an Al-Si-C compound, and Al was still detectable after annealing above 1000 °C.« less

Spectroscopic characterization of natural calcite minerals.

PubMed

Gunasekaran, S; Anbalagan, G

2007-11-01

The FT-IR, FT-Raman, NMR spectral data of ten different limestone samples have been compared. FT-IR and FT-Raman spectral data show that calcium carbonate in limestone, principally in the form of calcite, as identified by its main absorption bands at 1426, 1092, 876 and 712 cm(-1). The sharp diffractions at the d-spacings, 3.0348, 1.9166 and 1.8796 confirm the presence of calcite structure and the calculated lattice parameters are: a=4.9781 A, c=17.1188 A. The range of 13C chemical shifts for different limestone samples is very small, varying from 198.38 to 198.42 ppm. The observed chemical shifts are consistent with the identical C-O bonding in different limestone samples. 27Al MAS NMR spectra of the samples exhibit a central line at 1 ppm and another line at 60 ppm corresponding to octahedral and tetrahedral Al ions, respectively. The five component resonances were observed in 29Si MAS NMR spectrum of limestone and these resonances were assigned to Si (4 Al), Si (3 Al), Si (2 Al), Si (1 Al) and Si (0 Al) from low field to high field.

Al203 thin films on Silicon and Germanium substrates for CMOS and flash memory applications

NASA Astrophysics Data System (ADS)

Gopalan, Sundararaman; Dutta, Shibesh; Ramesh, Sivaramakrishnan; Prathapan, Ragesh; Sreehari G., S.

2017-07-01

As scaling of device dimensions has continued, it has become necessary to replace traditional SiO2 with high dielectric constant materials in the conventional CMOS devices. In addition, use of metal gate electrodes and Germanium substrates may have to be used in order to address leakage and mobility issues. Al2O3 is one of the potential candidates both for CMOS and as a blocking dielectric for Flash memory applications owing to its low leakage. In this study, the effects of sputtering conditions and post-deposition annealing conditions on the electrical and reliability characteristics of MOS capacitors using Al2O3 films on Si and Ge substrates with Aluminium gate electrodes have been presented. It was observed that higher sputtering power resulted in larger flat-band voltage (Vfb) shifts, more hysteresis, higher interface state density (Dit) and a poorer reliability. Wit was also found that while a short duration high temperature annealing improves film characteristics, a long duration anneal even at 800C was found to be detrimental to MOS characteristics. Finally, the electronic conduction mechanism in Al2O3 films was also studied. It was observed that the conduction mechanism varied depending on the annealing condition, thickness of film and electric field.

Quantum cascade lasers grown on silicon.

PubMed

Nguyen-Van, Hoang; Baranov, Alexei N; Loghmari, Zeineb; Cerutti, Laurent; Rodriguez, Jean-Baptiste; Tournet, Julie; Narcy, Gregoire; Boissier, Guilhem; Patriarche, Gilles; Bahriz, Michael; Tournié, Eric; Teissier, Roland

2018-05-08

Technological platforms offering efficient integration of III-V semiconductor lasers with silicon electronics are eagerly awaited by industry. The availability of optoelectronic circuits combining III-V light sources with Si-based photonic and electronic components in a single chip will enable, in particular, the development of ultra-compact spectroscopic systems for mass scale applications. The first circuits of such type were fabricated using heterogeneous integration of semiconductor lasers by bonding the III-V chips onto silicon substrates. Direct epitaxial growth of interband III-V laser diodes on silicon substrates has also been reported, whereas intersubband emitters grown on Si have not yet been demonstrated. We report the first quantum cascade lasers (QCLs) directly grown on a silicon substrate. These InAs/AlSb QCLs grown on Si exhibit high performances, comparable with those of the devices fabricated on their native InAs substrate. The lasers emit near 11 µm, the longest emission wavelength of any laser integrated on Si. Given the wavelength range reachable with InAs/AlSb QCLs, these results open the way to the development of a wide variety of integrated sensors.

Aluminum Matrix Composite (AlSi7Mg2Sr0.03/SiCp) Pistons Obtained by Mechanical Mixing Method

PubMed Central

2017-01-01

Metal matrix composites are undoubtedly a group of advanced engineering materials. Compared to unreinforced matrix material, they are characterized by increased strength, greater stiffness, increased wear resistance, better mechanical properties and dimensional stability at elevated temperatures as well as lower density. Due to its very favorable tribological properties for many years research has been conducted on the application of MMC in friction node. The article presents important technological aspects related to the production and properties of composite pistons. Under industrial conditions, a composite suspension (AlSi7Mg2Sr0.03/SiCp 10 vol %) was prepared to allow casting of the semi-finished pistons series. Machining parameters of the working surfaces of the piston were selected on the basis of the turning test made on PCD, PCNM and uncoated carbide tools. The tribological properties of the composite pistons were determined on the basis of the pin-on-disc and the abrasion wear. The scuffing tests carried out under real operating conditions have confirmed the possibility of using composite pistons in air compressors. PMID:29283419

Fabrication process development of SiC/superalloy composite sheet for exhaust system components

NASA Technical Reports Server (NTRS)

Cornie, J. A.; Cook, C. S.; Anderson, C. A.

1976-01-01

A chemical compatibility study was conducted between SiC filament and the following P/M matrix alloys: Waspaloy, Hastelloy-X, NiCrAlY, Ha-188, S-57, FeCrAlY, and Incoloy 800. None of the couples demonstrated sufficient chemical compatibility to withstand the minimum HIP consolidation temperatures (996 C) or intended application temperature of the composite (982 C). However, Waspaloy, Haynes 188, and Hastelloy-X were the least reactive with SiC of the candidate alloys. Chemical vapor deposited tungsten was shown to be an effective diffusion barrier between the superalloy matrix and SiC filament providing a defect-free coating of sufficient thickness. However, the coating breaks down when the tungsten is converted into intermetallic compounds by interdiffusion with matrix constituents. Waspaloy was demonstrated to be the most effective matrix alloy candidate in contact with the CVD tungsten barrier because of its relatively low growth rate constant of the intermediate compound and the lack of formation of Kirkendall voids at the matrix-barrier interface. Fabrication methods were developed for producing panels of uniaxial and angle ply composites utilizing CVD tungsten coated filament.

AlN-based piezoelectric micromachined ultrasonic transducer for photoacoustic imaging

NASA Astrophysics Data System (ADS)

Chen, Bingzhang; Chu, Futong; Liu, Xingzhao; Li, Yanrong; Rong, Jian; Jiang, Huabei

2013-07-01

We report on the fabrication of a piezoelectric micromachined ultrasonic transducer (pMUT) and its application to photoacoustic imaging. With c-axis orientation, AlN was grown on a 300 nm-thick SiO2 film and a 200 nm-thick bottom electrode at room temperature. The device consists of SiO2, bottom electrode, AlN films, upper electrode, and polyimide protective layer. An area ratio of 0.45 was used between the upper electrode and the vibration area of the pMUT to provide an optimal sensitivity of transducer. Its resonant frequency was measured to be 2.885 MHz, and the coupling coefficient in the range of 2.38%-3.71%. The fabricated pMUT was integrated with a photoacoustic imaging system and photoacoustic image of a phantom was obtained. The resolution of the system was measured to be about 240 μm.

Broadband infrared luminescence from Li2O-Al2O3-ZnO-SiO2 glasses doped with Bi2O3.

PubMed

Peng, Mingying; Qiu, Jianrong; Chen, Danping; Meng, Xiangeng; Zhu, Congshan

2005-09-05

The broadband emission in the 1.2~1.6mum region from Li2O-Al2O3-ZnO-SiO2 ( LAZS ) glass codoped with 0.01mol.%Cr2O3 and 1.0mol.%Bi2O3 when pumped by the 808nm laser at room temperature is not initiated from Cr4+ ions, but from bismuth, which is remarkably different from the results reported by Batchelor et al. The broad ~1300nm emission from Bi2O3-containing LAZS glasses possesses a FWHM ( Full Width at Half Maximum ) more than 250nm and a fluorescent lifetime longer than 500mus when excited by the 808nm laser. These glasses might have the potential applications in the broadly tunable lasers and the broadband fiber amplifiers.

Corrosion of Mullite by Molten Salts

NASA Technical Reports Server (NTRS)

Jacobson, Nathan S.; Lee, Kang N.; Yoshio, Tetsuo

1996-01-01

The interaction of molten salts of different Na2O activities and mullite is examined with furnace and burner tests. The more-acidic molten salts form small amounts of Al2O3; the more-basic molten salts form various Na2O-Al2O3-SiO2 compounds. The results are interpreted using the Na2O-Al203-SiO2 ternary phase diagram, and some possible diffusion paths are discussed. The generally higher melting points of Na2O-Al2O3-SiO2 compounds lead to better behavior of mullite in molten salts, as compared to SiO2-protected ceramics such as SiC. Mullite-coated SiC is discussed, and the corrosion behavior is evaluated.

Fabrication and Analysis of the Wear Properties of Hot-Pressed Al-Si/SiCp + Al-Si-Cu-Mg Metal Matrix Composite

NASA Astrophysics Data System (ADS)

Bang, Jeongil; Oak, Jeong-Jung; Park, Yong Ho

2016-01-01

The aim of this study was to characterize microstructures and mechanical properties of aluminum metal matrix composites (MMC's) prepared by powder metallurgy method. Consolidation of mixed powder with gas atomized Al-Si/SiCp powder and Al-14Si-2.5Cu-0.5Mg powder by hot pressing was classified according to sintering temperature and sintering time. Sintering condition was optimized using tensile properties of sintered specimens. Ultimate tensile strength of the optimized sintered specimen was 228 MPa with an elongation of 5.3% in longitudinal direction. In addition, wear properties and behaviors of the sintered aluminum-based MMC's were analyzed in accordance with vertical load and linear speed. As the linear speed and vertical load of the wear increased, change of the wear behavior occurred in order of oxidation of Al-Si matrix, formation of C-rich layer, Fe-alloying to matrix, and melting of the specimen

Sr-Al-Si co-segregated regions in eutectic Si phase of Sr-modified Al-10Si alloy.

PubMed

Timpel, M; Wanderka, N; Schlesiger, R; Yamamoto, T; Isheim, D; Schmitz, G; Matsumura, S; Banhart, J

2013-09-01

The addition of 200 ppm strontium to an Al-10 wt% Si casting alloy changes the morphology of the eutectic silicon phase from coarse plate-like to fine fibrous networks. In order to clarify this modification mechanism the location of Sr within the eutectic Si phase has been investigated by a combination of high-resolution methods. Whereas three-dimensional atom probe tomography allows us to visualise the distribution of Sr on the atomic scale and to analyse its local enrichment, transmission electron microscopy yields information about the crystallographic nature of segregated regions. Segregations with two kinds of morphologies were found at the intersections of Si twin lamellae: Sr-Al-Si co-segregations of rod-like morphology and Al-rich regions of spherical morphology. Both are responsible for the formation of a high density of multiple twins and promote the anisotropic growth of the eutectic Si phase in specific crystallographic directions during solidification. The experimental findings are related to the previously postulated mechanism of "impurity induced twinning". Copyright © 2012 Elsevier B.V. All rights reserved.

Nonisovalent Si-III-V and Si-II-VI alloys: Covalent, ionic, and mixed phases

DOE PAGES

Kang, Joongoo; Park, Ji -Sang; Stradins, Pauls; ...

2017-07-13

In this paper, nonequilibrium growth of Si-III-V or Si-II-VI alloys is a promising approach to obtaining optically more active Si-based materials. We propose a new class of nonisovalent Si 2AlP (or Si 2ZnS) alloys in which the Al-P (or Zn-S) atomic chains are as densely packed as possible in the host Si matrix. As a hybrid of the lattice-matched parent phases, Si2AlP (or Si2ZnS) provides an ideal material system with tunable local chemical orders around Si atoms within the same composition and structural motif. Here, using first-principles hybrid functional calculations, we discuss how the local chemical orders affect the electronicmore » and optical properties of the nonisovalent alloys.« less

Engineering epitaxial γ-Al2O3 gate dielectric films on 4H-SiC

NASA Astrophysics Data System (ADS)

Tanner, Carey M.; Toney, Michael F.; Lu, Jun; Blom, Hans-Olof; Sawkar-Mathur, Monica; Tafesse, Melat A.; Chang, Jane P.

2007-11-01

The formation of epitaxial γ-Al2O3 thin films on 4H-SiC was found to be strongly dependent on the film thickness. An abrupt interface was observed in films up to 200 Å thick with an epitaxial relationship of γ-Al2O3(111)‖4H-SiC(0001) and γ-Al2O3(44¯0)‖4H-SiC(112¯0). The in-plane alignment between the film and the substrate is nearly complete for γ-Al2O3 films up to 115 Å thick, but quickly diminishes in thicker films. The films are found to be slightly strained laterally in tension; the strain increases with thickness and then decreases in films thicker than 200 Å, indicating strain relaxation which is accompanied by increased misorientation. By controlling the structure of ultrathin Al2O3 films, metal-oxide-semiconductor capacitors with Al2O3 gate dielectrics on 4H-SiC were found to have a very low leakage current density, suggesting suitability of Al2O3 for SiC device integration.

Microhardness and morphologic characteristics of rapidly solidified Al-12Si-8Ni-5Nd alloy

NASA Astrophysics Data System (ADS)

Karaköse, Ercan; Keskin, Mustafa

2010-06-01

Al-Si-Ni-Nd alloys with a nominal composition of Al-12 wt.% Si-8 wt.% Ni-5 wt.% Nd alloy are prepared by a conventional casting (ingot) and melt spinning technique at different cooling rates ( ν). The effects of the rapid solidification rate on the microstructures and microhardness performances of the specimen alloys are investigated in detail. The results obtained by the XRD, SEM and DSC show that the ingot and melt spun alloys have a multiphase structure. When ν is 5 m/s, the alloy consists of four phases namely α-Al, intermetallic Al3Ni, Al11Nd3, and fcc Si. The melt-spun ribbons are completely composed of α-Al and eutectic Si phases, and primary silicon is not observed when ν increases to 20 m/s, 25 m/s, 30 m/s and 35 m/s. The XRD analysis indicated that the solubility of Si in the α-Al matrix increases greatly with the rapid solidification. The change in microhardness is discussed based on the microstructural observations. The microhardness values of the melt spun ribbons are about three times higher than those of ingot counterparts.

SiGe Integrated Circuit Developments for SQUID/TES Readout

NASA Astrophysics Data System (ADS)

Prêle, D.; Voisin, F.; Beillimaz, C.; Chen, S.; Piat, M.; Goldwurm, A.; Laurent, P.

2018-03-01

SiGe integrated circuits dedicated to the readout of superconducting bolometer arrays for astrophysics have been developed since more than 10 years at APC. Whether for Cosmic Microwave Background (CMB) observations with the QUBIC ground-based experiment (Aumont et al. in astro-ph.IM, 2016. arXiv:1609.04372) or for the Hot and Energetic Universe science theme with the X-IFU instrument on-board of the ATHENA space mission (Barret et al. in SPIE 9905, space telescopes & instrumentation 2016: UV to γ Ray, 2016. https://doi.org/10.1117/12.2232432), several kinds of Transition Edge Sensor (TES) (Irwin and Hilton, in ENSS (ed) Cryogenic particle detection, Springer, Berlin, 2005) arrays have been investigated. To readout such superconducting detector arrays, we use time or frequency domain multiplexers (TDM, FDM) (Prêle in JINST 10:C08015, 2016. https://doi.org/10.1088/1748-0221/10/08/C08015) with Superconducting QUantum Interference Devices (SQUID). In addition to the SQUID devices, low-noise biasing and amplification are needed. These last functions can be obtained by using BiCMOS SiGe technology in an Application Specific Integrated Circuit (ASIC). ASIC technology allows integration of highly optimised circuits specifically designed for a unique application. Moreover, we could reach very low-noise and wide band amplification using SiGe bipolar transistor either at room or cryogenic temperatures (Cressler in J Phys IV 04(C6):C6-101, 1994. https://doi.org/10.1051/jp4:1994616). This paper discusses the use of SiGe integrated circuits for SQUID/TES readout and gives an update of the last developments dedicated to the QUBIC telescope and to the X-IFU instrument. Both ASIC called SQmux128 and AwaXe are described showing the interest of such SiGe technology for SQUID multiplexer controls.

Defect analysis in low temperature atomic layer deposited Al{sub 2}O{sub 3} and physical vapor deposited SiO barrier films and combination of both to achieve high quality moisture barriers

DOE Office of Scientific and Technical Information (OSTI.GOV)

Maindron, Tony, E-mail: tony.maindron@cea.fr; Jullien, Tony; André, Agathe

2016-05-15

Al{sub 2}O{sub 3} [20 nm, atomic layer deposition (ALD)] and SiO films' [25 nm, physical vacuum deposition (PVD)] single barriers as well as hybrid barriers of the Al{sub 2}O{sub 3}/SiO or SiO/Al{sub 2}O{sub 3} have been deposited onto single 100 nm thick tris-(8-hydroxyquinoline) aluminum (AlQ{sub 3}) organic films made onto silicon wafers. The defects in the different barrier layers could be easily observed as nonfluorescent AlQ{sub 3} black spots, under ultraviolet light on the different systems stored into accelerated aging conditions (85 °C/85% RH, ∼2000 h). It has been observed that all devices containing an Al{sub 2}O{sub 3} layer present a lag time τ frommore » which defect densities of the different systems start to increase significantly. This is coherent with the supposed pinhole-free nature of fresh, ALD-deposited, Al{sub 2}O{sub 3} films. For t > τ, the number of defect grows linearly with storage time. For devices with the single Al{sub 2}O{sub 3} barrier layer, τ has been estimated to be 64 h. For t > τ, the defect occurrence rate has been calculated to be 0.268/cm{sup 2}/h. Then, a total failure of fluorescence of the AlQ{sub 3} film appears between 520 and 670 h, indicating that the Al{sub 2}O{sub 3} barrier has been totally degraded by the hot moisture. Interestingly, the device with the hybrid barrier SiO/Al{sub 2}O{sub 3} shows the same characteristics as the device with the single Al{sub 2}O{sub 3} barrier (τ = 59 h; 0.246/cm{sup 2}/h for t > τ), indicating that Al{sub 2}O{sub 3} ALD is the factor that limits the performance of the barrier system when it is directly exposed to moisture condensation. At the end of the storage period (1410 h), the defect density for the system with the hybrid SiO/Al{sub 2}O{sub 3} barrier is 120/cm{sup 2}. The best sequence has been obtained when Al{sub 2}O{sub 3} is passivated by the SiO layer (Al{sub 2}O{sub 3}/SiO). In that case, a large lag time of 795 h and a very low defect growth rate of 0.032/cm{sup 2}/h (t > τ) have been measured. At the end of the storage test (2003 h), the defect density remains very low, i.e., only 50/cm{sup 2}. On the other hand, the device with the single PVD-deposited SiO barrier layer shows no significant lag time (τ ∼ 0), and the number of defects grows linearly from initial time with a high occurrence rate of 0.517/cm{sup 2}/h. This is coherent with the pinhole-full nature of fresh, PVD-deposited, SiO films. At intermediate times, a second regime shows a lower defect occurrence rate of 0.062/cm{sup 2}/h. At a longer time span (t > 1200 h), the SiO barrier begins to degrade, and a localized crystallization onto the oxide surface, giving rise to new defects (occurrence rate 0.461/cm{sup 2}/h), could be observed. At the end of the test (2003 h), single SiO films show a very high defect density of 600/cm{sup 2}. Interestingly, the SiO surface in the Al{sub 2}O{sub 3}/SiO device does not appeared crystallized at a high time span, suggesting that the crystallization observed on the SiO surface in the AlQ{sub 3}/SiO device rather originates into the AlQ{sub 3} layer, due to high humidity ingress on the organic layer through SiO pinholes. This has been confirmed by atomic force microscopy surface imaging of the AlQ{sub 3}/SiO surface showing a central hole in the crystallization zone with a 60 nm depth, deeper than SiO thickness (25 nm). Using the organic AlQ{sub 3} sensor, the different observations made in this work give a quantitative comparison of defects' occurrence and growth in ALD-deposited versus PVD-deposited oxide films, as well as in their combination PVD/ALD and ALD/PVD.« less

Simulation of automotive wrist pin joint and tribological studies of tin coated Al-Si alloy, metal matrix composites and nitrogen ceramics under mixed lubrication

NASA Astrophysics Data System (ADS)

Wang, Qian

Development of automotive engines with high power output demands the application of high strength materials with good tribological properties. Metal matrix composites (MMC's) and some nitrogen ceramics are of interest to replace some conventional materials in the piston/pin/connecting rod design. A simulation study has been developed to explore the possibility to employ MMC's as bearing materials and ceramics as journal materials, and to investigate the related wear mechanisms and the possible journal bearing failure mechanisms. Conventional tin coated Al-Si alloy (Al-Si/Sn) have been studied for the base line information. A mixed lubrication model for journal bearing with a soft coating has been developed and applied to the contact and temperature analysis of the Al-Si/Sn bearing. Experimental studies were performed to reveal the bearing friction and wear behavior. Tin coating exhibited great a advantage in friction reduction, however, it suffered significant wear through pitting and debonding. When the tin wore out, the Al-Si/steel contact experienced higher friction. A cast and P/M MMC's in the lubricated contact with case hardened steel and ceramic journals were studied experimentally. Without sufficient material removal in the conformal contact situation, MMC bearings in the MMC/steel pairs gained weight due to iron transfer and surface tribochemical reactions with the lubricant additives and contact failure occurred. However, the MMC/ceramic contacts demonstrated promising tribological behavior with low friction and high wear resistance, and should be considered for new journal bearing design. Ceramics are wear resistant. Ceramic surface roughness is very crucial when the journals are in contact with the tin coated bearings. In contact with MMC bearings, ceramic surface quality and fracture toughness seem to play some important roles in affecting the friction coefficient. The wear of silicon nitride and beta sialon (A) journals is pitting due to grain boundary fracture and grain pull-out.

Variations in interface compound nucleation for Ti-Al ultrathin films on Si substrates

NASA Astrophysics Data System (ADS)

Han, C. C.; Bené, R. W.

1985-11-01

We have determined the structures of compounds nucleated in a series of sequentially sputtered thin bilayer films of Al and Ti on Si substrates for a range of metal thicknesses and for both (100) and (111) substrates. The compound structures were determined by transmission electron microscopy and diffraction, augmented by Auger electron spectroscopy. An annealing temperature of about 380 °C for 30 min was required to produce compound nucleation. For the Ti/Al/Si(100) system it was found that the phases which were nucleated for samples with 30-min, 380 °C anneals varied from TiAl3 to Ti8Al24 to an unknown compound of tetragonal structure (a=b=5.782 Å, c=6.713 Å) as the Al intermediate layer thickness is changed from 200 to 60 to 40 Å. TiAl3 was the compound nucleated at 380 °C for all other cases. Finally, 410 °C annealing of the Al/Ti/Si(100) samples for 30 min resulted in formation of an apparently Al-altered form of TiSi2.

Method for improving the toughness of silicon carbide-based ceramics

DOEpatents

Tein, Tseng-Ying; Hilmas, Gregory E.

1996-01-01

Method of improving the toughness of SiC-based ceramics. SiC, , AlN, Al.sub.2 O.sub.3 and optionally .alpha.-Si.sub.3 N.sub.4 are hot pressed to form a material which includes AlN polytypoids within its structure.

Corrosion and protection of heterogeneous cast Al-Si (356) and Al-Si-Cu-Fe (380) alloys by chromate adn cerium inhibitors

NASA Astrophysics Data System (ADS)

Jain, Syadwad

In this study, the localized corrosion and conversion coating on cast alloys 356 (Al-7.0Si-0.3Mg) and 380 (Al-8.5Si-3.5Cu-1.6Fe) were characterized. The intermetallic phases presence in the permanent mold cast alloy 356 are primary-Si, Al5FeSi, Al8Si6Mg3Fe and Mg2Si. The die cast alloy 380 is rich in Cu and Fe elements. These alloying elements result in formation of the intermetallic phases Al 5FeSi, Al2Cu and Al(FeCuCr) along with primary-Si. The Cu- and Fe-rich IMPS are cathodic with respect to the matrix phase and strongly govern the corrosion behavior of the two cast alloys in an aggressive environment due to formation of local electrochemical cell in their vicinity. Results have shown that corrosion behavior of permanent mould cast alloy 356 is significantly better than the die cast aluminum alloy 380, primarily due to high content of Cu- and Fe-rich phases such as Al2Cu and Al 5FeSi in the latter. The IMPS also alter the protection mechanism of the cast alloys in the presence of inhibitors in an environment. The presence of chromate in the solution results in reduced cathodic activity on all the phases. Chromate provides some anodic inhibition by increasing pitting potentials and altering corrosion potentials for the phases. Results have shown that performance of CCC was much better on 356 than on 380, primarily due to inhomogeneous and incomplete coating deposition on Cu- and Fe- phases present in alloy 380. XPS and Raman were used to characterize coating deposition on intermetallics. Results show evidence of cyanide complex formation on the intermetallic phases. The presence of this complex is speculated to locally suppress CCC formation. Formation and breakdown of cerium conversion coatings on 356 and 380 was also analyzed. Results showed that deposition of cerium hydroxide started with heavy precipitation on intermetallic particles with the coatings growing outwards onto the matrix. Electrochemical analysis of synthesized intermetallics compounds in the presence of soluble cerium cations showed that of anodic and cathodic activity was not as strongly inhibited as was observed for chromate ions. Overall cerium conversion coating showed good performance on Al-Si (356) ally, but poor performance on Fe- and Cu-rich alloy (380).

Comparative evaluation of cast aluminum alloys for automotive cylinder heads: Part I Microstructure evolution

DOE Office of Scientific and Technical Information (OSTI.GOV)

Roy, Shibayan; Allard, Jr, Lawrence Frederick; Rodriguez, Andres

The present study stages a comparative evaluation of microstructure and associated mechanical and thermal response for common cast aluminum alloys that are used for manufacturing automotive cylinder heads. The systems considered are Al-Cu (206-T6), Al-Si-Cu (319-T7), and Al-Si (356-T6, A356-T6, and A356 + 0.5Cu-T6). The focus of the present manuscript is on the evaluation of microstructure at various length scales after aging, while the second manuscript will deal with the mechanical and thermal response of these alloys due to short-term (aging) and long-term (pre-conditioning) heat treatments. At the grain-scale, the Al-Cu alloy possessed an equiaxed microstructure as opposed to themore » dendritic structure for the Al-Si-Cu or Al-Si alloys which is related to the individual solidification conditions for these alloy systems. The composition and morphology of intermetallic precipitates within the grain and at the grain/dendritic boundary are dictated by the alloy chemistry, solidification, and heat treatment conditions. At the nanoscale, these alloys contain various metastable strengthening precipitates (GPI and θ''θ'' in Al-Cu alloy, θ'θ' in Al-Si-Cu alloy, and β'β' in Al-Si alloys) with varying size, morphology, coherency, and thermal stability.« less

Comparative evaluation of cast aluminum alloys for automotive cylinder heads: Part I Microstructure evolution

DOE PAGES

Roy, Shibayan; Allard, Jr, Lawrence Frederick; Rodriguez, Andres; ...

2017-03-06

The present study stages a comparative evaluation of microstructure and associated mechanical and thermal response for common cast aluminum alloys that are used for manufacturing automotive cylinder heads. The systems considered are Al-Cu (206-T6), Al-Si-Cu (319-T7), and Al-Si (356-T6, A356-T6, and A356 + 0.5Cu-T6). The focus of the present manuscript is on the evaluation of microstructure at various length scales after aging, while the second manuscript will deal with the mechanical and thermal response of these alloys due to short-term (aging) and long-term (pre-conditioning) heat treatments. At the grain-scale, the Al-Cu alloy possessed an equiaxed microstructure as opposed to themore » dendritic structure for the Al-Si-Cu or Al-Si alloys which is related to the individual solidification conditions for these alloy systems. The composition and morphology of intermetallic precipitates within the grain and at the grain/dendritic boundary are dictated by the alloy chemistry, solidification, and heat treatment conditions. At the nanoscale, these alloys contain various metastable strengthening precipitates (GPI and θ''θ'' in Al-Cu alloy, θ'θ' in Al-Si-Cu alloy, and β'β' in Al-Si alloys) with varying size, morphology, coherency, and thermal stability.« less

Comparative Evaluation of Cast Aluminum Alloys for Automotive Cylinder Heads: Part I—Microstructure Evolution

NASA Astrophysics Data System (ADS)

Roy, Shibayan; Allard, Lawrence F.; Rodriguez, Andres; Watkins, Thomas R.; Shyam, Amit

2017-05-01

The present study stages a comparative evaluation of microstructure and associated mechanical and thermal response for common cast aluminum alloys that are used for manufacturing automotive cylinder heads. The systems considered are Al-Cu (206-T6), Al-Si-Cu (319-T7), and Al-Si (356-T6, A356-T6, and A356 + 0.5Cu-T6). The focus of the present manuscript is on the evaluation of microstructure at various length scales after aging, while the second manuscript will deal with the mechanical and thermal response of these alloys due to short-term (aging) and long-term (pre-conditioning) heat treatments. At the grain-scale, the Al-Cu alloy possessed an equiaxed microstructure as opposed to the dendritic structure for the Al-Si-Cu or Al-Si alloys which is related to the individual solidification conditions for these alloy systems. The composition and morphology of intermetallic precipitates within the grain and at the grain/dendritic boundary are dictated by the alloy chemistry, solidification, and heat treatment conditions. At the nanoscale, these alloys contain various metastable strengthening precipitates (GPI and θ^'' in Al-Cu alloy, θ^' in Al-Si-Cu alloy, and β^' in Al-Si alloys) with varying size, morphology, coherency, and thermal stability.

Ultra-lightweight optics for laser communications

NASA Astrophysics Data System (ADS)

Vukobratovich, Daniel

1990-07-01

Recent applications of the very light Al/SiC metal-matrix composite SXA in the construction of telescopes for use as receiver antennas in optical intersatellite communication systems are reviewed and illustrated with drawings and diagrams. Data on the mechanical properties (specific stiffness, fundamental frequency, dynamic response, and fracture toughness) and the thermal expansion, distortion, and diffusivity of SXA are compared with those for Al 6016-T6, Be I-70A, SiC, and Zerodur in tables, and the advantages of SXA structural foams of density 250-500 kg/cu m are indicated. The criteria evaluated for optimization of the mirror shape and the overall telescope design are discussed, and four prototype Cassegrain telescopes (with Meinel or Dall truss structures) are described in detail.

Analysis of charcoal blast furnace slags by laser-induced breakdown spectroscopy

DOE PAGES

Bhatt, Chet R.; Goueguel, Christian L.; Jain, Jinesh C.; ...

2017-09-22

Laser-induced breakdown spectroscopy (LIBS) was used for the analysis of charcoal blast furnace slags. Plasma was generated by an application of a 1064 nm wavelength Nd:YAG laser beam to the surface of pellets created from the slags. The presence of Al, Ca, Fe, K, Mg, Mn, and Si was determined by identifying their characteristic spectral signatures. Multivariate analysis was performed for the quantification of these elements. The predicted LIBS results were found in agreement with the inductively coupled plasma optical emission spectrometry analysis. The limit of detection for Al, Ca, Fe, K, Mg, Mn, and Si was calculated to bemore » 0.10%, 0.22%, 0.02%, 0.01%, 0.01%, 0.005%, and 0.18%, respectively.« less

Analysis of charcoal blast furnace slags by laser-induced breakdown spectroscopy

DOE Office of Scientific and Technical Information (OSTI.GOV)

Bhatt, Chet R.; Goueguel, Christian L.; Jain, Jinesh C.

Laser-induced breakdown spectroscopy (LIBS) was used for the analysis of charcoal blast furnace slags. Plasma was generated by an application of a 1064 nm wavelength Nd:YAG laser beam to the surface of pellets created from the slags. The presence of Al, Ca, Fe, K, Mg, Mn, and Si was determined by identifying their characteristic spectral signatures. Multivariate analysis was performed for the quantification of these elements. The predicted LIBS results were found in agreement with the inductively coupled plasma optical emission spectrometry analysis. The limit of detection for Al, Ca, Fe, K, Mg, Mn, and Si was calculated to bemore » 0.10%, 0.22%, 0.02%, 0.01%, 0.01%, 0.005%, and 0.18%, respectively.« less

Neutron absorption of Al-Si-Mg-B{sub 4}C composite

DOE Office of Scientific and Technical Information (OSTI.GOV)

Abdullah, Yusof, E-mail: yusofabd@nuclearmalaysia.gov.my; Yusof, Mohd Reusmaazran; Ibrahim, Anis Syukriah

2016-01-22

Al-Si-Mg-B{sub 4}C composites containing 2-8 wt% of B{sub 4}C were prepared by stir casting technique. Homogenization treatment was carried out at temperatures of 540°C for 4 houra and followed by ageing at 180°C for 2 houra. Microstructure and phase identification were studied by scanning electron microscopy (SEM) and X-ray diffraction (XRD) respectively. Neutron absorption study was investigated using neutron source Am/Be{sup 241}. The result indicated that higher B{sub 4}C content improved the neutron absorption property. Meanwhile homogeneity of the composite was increased by ageing processes. This composite is potential to be used as neutron shielding material especially for nuclear reactormore » application.« less

High strain rate behavior of a SiC particulate reinforced Al{sub 2}O{sub 3} ceramic matrix composite

DOE Office of Scientific and Technical Information (OSTI.GOV)

Hall, I.W.; Guden, M.

The high strain rate deformation behavior of composite materials is important for several reasons. First, knowledge of the mechanical properties of composites at high strain rates is needed for designing with these materials in applications where sudden changes in loading rates are likely to occur. Second, knowledge of both the dynamic and quasi-static mechanical responses can be used to establish the constitutive equations which are necessary to increase the confidence limits of these materials, particularly if they are to be used in critical structural applications. Moreover, dynamic studies and the knowledge gained form them are essential for the further developmentmore » of new material systems for impact applications. In this study, the high strain rate compressive deformation behavior of a ceramic matrix composite (CMC) consisting of SiC particles and an Al{sub 2}O{sub 3} matrix was studied and compared with its quasi-static behavior. Microscopic observations were conducted to investigate the deformation and fracture mechanism of the composite.« less

Effect of Copper on Corrosion of Forged AlSi1MgMn Automotive Suspension Components

NASA Astrophysics Data System (ADS)

Koktas, Serhan; Gokcil, Emre; Akdi, Seracettin; Birol, Yucel

2017-09-01

Recently, modifications in the alloy composition and the manufacturing process cycle were proposed to achieve a more uniform structure with no evidence of coarse grains across the section of the AlSi1MgMn alloys. Cu was added to the AlSi1MgMn alloy to improve its age hardening capacity without a separate solution heat treatment. However, Cu addition degrades the corrosion resistance of this alloy due to the formation of Al-Cu precipitates along the grain boundaries that are cathodic with respect to the aluminum matrix and thus encourage intergranular corrosion. The present work was undertaken to identify the impact of Cu addition on the corrosion properties of AlSi1MgMn alloys with different Cu contents. A series of AlSi1MgMn alloys with 0.06-0.89 wt.% Cu were tested in order to identify an optimum level of Cu addition.

Method for improving the toughness of silicon carbide-based ceramics

DOEpatents

Tein, T.Y.; Hilmas, G.E.

1996-12-03

Method of improving the toughness of SiC-based ceramics is disclosed. SiC, , AlN, Al{sub 2}O{sub 3} and optionally {alpha}-Si{sub 3}N{sub 4} are hot pressed to form a material which includes AlN polytypoids within its structure. 1 fig.

Structure and electromagnetic properties of FeSiAl particles coated by MgO

NASA Astrophysics Data System (ADS)

Zhang, Yu; Zhou, Ting-dong

2017-03-01

FeSiAl particles with a layer of MgO surface coating have excellent soft magnetic and electromagnetic properties. In order to obtain the FeSiAl/MgO composites, Mg(OH)2 sol prepared by sol-gel process was well-mixed with FeSiAl flake particles, and then treated by calcination at 823 K in vacuum. The microstructural, morphological and electromagnetic parameters of FeSiAl/MgO particles were tested. Accordingly, the electromagnetic wave reflection loss in the frequency range of 0.5-18 GHz was calculated. The results show that the surface coating increases coercivity Hc and decreases complex permittivity, leading to a good impedance matching. When the coating amount was 7.5%, reflection loss of the composite particles can reach to -33 dB.

Synthesis, crystal structure, and luminescence properties of a new nitride polymorph, β-Sr0.98Eu0.02AlSi4N7

NASA Astrophysics Data System (ADS)

Yoshimura, Fumitaka; Yamane, Hisanori; Nagasako, Makoto

2018-02-01

Prismatic vermilion single crystals 200 μm-2 mm in size, together with a white powder, were obtained by heating a mixture of binary nitrides containing Mg3N2 at 2030 °C under 0.85 MPa of N2. Yellow, thick-platelet single crystals with sizes of 150-500 μm were also found to grow at or near the surface of the product. Single crystal X-ray diffraction demonstrated that the vermilion crystals were orthorhombic Sr0.98Eu0.02AlSi4N7, which has been prepared in previous studies and is termed the α phase of this compound. The yellow crystals were revealed to be a new polymorph of Sr0.98Eu0.02AlSi4N7 (β phase) that crystalized in a monoclinic cell (a = 8.1062(1) Å, b = 9.0953(1) Å, c = 8.9802(2) Å, β = 111.6550(5)°, space group P21) with twins that could be examined by transmission and scanning transmission electron microscopy. β-Sr0.98Eu0.02AlSi4N7 was found to have a three-dimensional network structure formed by the stacking of two types of layers. One is a dreier layer of (Al/Si)N4 tetrahedra that consists of N vertex-sharing double chains of (Al/Si)N4 tetrahedra extending in the c-axis direction with Sr and Eu atoms aligned between the chains, while the other is a layer of (Al/Si)N4 tetrahedra connected by sharing N edges and vertexes. The crystal structure of β-Sr0.98Eu0.02AlSi4N7 is similar to those of certain oxynitrides, such as Sr3Al3+xSi13-xN21-xO2+x:Eu2+ (x ≈ 0) and Sr4.9Eu0.1Al5+xSi21-xN35-xO2+x (x ≈ 0). The peak wavelength and full width at half maximum in the emission spectrum obtained from single crystals of β-Sr0.98Eu0.02AlSi4N7 under excitation at 400 nm were 541 and 66 nm, respectively.

Synthesis and structure of a stuffed derivative of α-quartz, Mg 0.5AlSiO 4

DOE PAGES

Xu, Hongwu; Heaney, Peter J.; Yu, Ping; ...

2015-10-01

A structural derivative of quartz with the composition Mg 0.5AlSiO 4 has been grown from glass and characterized using synchrotron X-ray diffraction (XRD), transmission electron microscopy (TEM), and 29Si nuclear magnetic resonance (NMR) spectroscopy. Rietveld analysis of the XRD data indicates that the framework of Mg 0.5AlSiO 4 is isostructural with α-quartz, rather than β-quartz, as is consistent with previous theoretical modeling (Sternitzke and Müller 1991). Al and Si exhibit long-range disorder over the framework tetrahedral sites, indicated by the absence of the superlattice reflections corresponding to the doubling of c relative to that of quartz. Nevertheless, 29Si NMR measurementsmore » show that Al and Si exhibit partial short-range order with an ordering degree of 56%. Electron diffraction reveals superlattice reflections indicative of doubled periodicities along the a-axes. In conclusion, Fourier electron density maps show that Mg occupies channel sites that each are bonded to six O atoms, in contrast to the tetrahedral coordination of Li in the β-quartz-type framework for β-eucryptite, LiAlSiO 4. Furthermore, the concentrations of Mg in adjacent channels are different, resulting in framework distortions that generate the superstructures along a.« less

Microstructure, mechanical and tribological performance of hybrid A359/(SiC  +  Si3N4) composites for automotive applications

NASA Astrophysics Data System (ADS)

Shalaby, Essam A. M.; Churyumov, Alexander Yu

2017-11-01

In this study, microstructure analysis, yield strength at high temperatures and wear rate of hybrid A359/(SiC  +  Si3N4) composites were investigated. Different weight percent of (SiC  +  Si3N4) particles were introduced to synthesis the composites using stir/squeeze process. XRD, SEM, TEM and EDS were utilized to investigate the distribution of particles throughout the matrix, and the interfacial reaction at matrix/particle interface. It confirmed the existence of MgAl2O4 which enhances the wettability between the particles and the matrix, and the absence of particle agglomeration. The (SiC  +  Si3N4) addition not only enhances the hardness measurements but also leads to a reduction in the dendritic arm spacing (DAS). Moreover, it develops the wear performance and the yield strength at high temperatures. The developed composites provide a promising material suitable for automotive industries.

Atom probe tomography of intermetallic phases and interfaces formed in dissimilar joining between Al alloys and steel

DOE Office of Scientific and Technical Information (OSTI.GOV)

Lemmens, B.

While Si additions to Al are widely used to reduce the thickness of the brittle intermetallic seam formed at the interface during joining of Al alloys to steel, the underlying mechanisms are not clarified yet. The developed approach for the site specific atom probe tomography analysis revealed Si enrichments at grain and phase boundaries between the θ (Fe{sub 4}Al{sub 13}) and η (Fe{sub 2}Al{sub 5}) phase, up to about ten times that of the concentration in Al. The increase in Si concentration could play an important role for the growth kinetics of the intermetallic phases formed for example in hot-dipmore » aluminizing of steel. - Highlights: •Si additions to Al reduce thickness of intermetallic seam in joining with steel. •Approach developed for the site specific APT analysis of the intermetallic seam •Si enrichment at grain and phase boundaries possibly affects growth of intermetallics.« less

Crystallography of the NiHfSi Phase in a NiAl (0.5 Hf) Single-Crystal Alloy

NASA Technical Reports Server (NTRS)

Garg, A.; Noebe, R. D.; Darolia, R.

1996-01-01

Small additions of Hf to conventionally processed NiAl single crystals result in the precipitation of a high density of cuboidal G-phase along with a newly identified silicide phase. Both of these phases form in the presence of Si which is not an intentional alloying addition but is a contaminant resulting from contact with the ceramic shell molds during directional solidification of the single-crystal ingots. The morphology, crystal structure and Orientation Relationship (OR) of the silicide phase in a NiAl (0.5 at.%Hf) single-crystal alloy have been determined using transmission electron microscopy, electron microdiffraction and energy dispersive X-ray spectroscopy. Qualitative elemental analysis and indexing of the electron microdiffraction patterns from the new phase indicate that it is an orthorhombic NiHfSi phase with unit cell parameters, a = 0.639 nm, b = 0.389 nm and c = 0.72 nm, and space group Pnma. The NiHfSi phase forms as thin rectangular plates on NiAl/111/ planes with an OR that is given by NiHfSi(100))(parallel) NiAl(111) and NiHfSi zone axes(010) (parallel) NiAl zone axes (101). Twelve variants of the NiHfSi phase were observed in the alloy and the number of variants and rectangular morphology of NiHfSi plates are consistent with symmetry requirements. Quenching experiments indicate that nucleation of the NiHfSi phase in NiAI(Hf) alloys is aided by the formation of NiAl group of zone axes (111) vacancy loops that form on the NiAl /111/ planes.

The Effects of Sn Addition on the Microstructure and Surface Properties of Laser Deposited Al-Si-Sn Coatings on ASTM A29 Steel

NASA Astrophysics Data System (ADS)

Fatoba, Olawale S.; Akinlabi, Stephen A.; Akinlabi, Esther T.

2018-03-01

Aluminium and its alloys have been successful metal materials used for many applications like commodity roles, automotive and vital structural components in aircrafts. A substantial portion of Al-Fe-Si alloy is also used for manufacturing the packaging foils and sheets for common heat exchanger applications. The present research was aimed at studying the morphology and surface analyses of laser deposited Al-Sn-Si coatings on ASTM A29 steel. These Fe-intermetallic compounds influence the material properties during rapid cooling by laser alloying technique and play a crucial role for the material quality. Thus, it is of considerable technological interest to control the morphology and distribution of these phases in order to eliminate the negative effects on microstructure. A 3 kW continuous wave ytterbium laser system (YLS) attached to a KUKA robot which controls the movement of the alloying process was utilized for the fabrication of the coatings at optimum laser parameters. The fabricated coatings were investigated for its hardness and wear resistance performance. The field emission scanning electron microscope equipped with energy dispersive spectroscopy (SEM/EDS) was used to study the morphology of the fabricated coatings and X-ray diffractometer (XRD) for the identification of the phases present in the coatings. The coatings were free of cracks and pores with homogeneous and refined microstructures. The enhanced hardness and wear resistance performance were attributed to metastable intermetallic compounds formed.

High performance porous Si@C anodes synthesized by low temperature aluminothermic reaction

DOE Office of Scientific and Technical Information (OSTI.GOV)

Mishra, Kuber; Zheng, Jianming; Patel, Rajankumar

A low temperature (210°C) aluminothermic reduction reaction process has been developed to synthesis porous silicon (Si) as an anode for Li ion battery applications. An eutectic mixture of AlCl3 and ZnCl2 is used as the mediator to reduce the reaction temperature. With carbon pre-coated on the porous SiO2 precursor, porous Si@C core shell structured anodes could be obtained with structure and morphology similar to that of the porous precursor. In addition, carbon coated porous Si also exhibits superior cyclic stability, higher rate performance, and higher coulombic efficiency. The porous Si anode demonstrates a high specific capacity of ~2100 mAh/g atmore » the current density of 1.2 A/g and has a good cycling stability with ~76% capacity retention over 250 cycles. Therefore, it will be a good candidate for anode used in high energy density Li-ion batteries.« less

Wear behavioral study of as cast and 7 hr homogenized Al25Mg2Si2Cu4Ni alloy at constant load

NASA Astrophysics Data System (ADS)

Harlapur, M. D.; Sondur, D. G.; Akkimardi, V. G.; Mallapur, D. G.

2018-04-01

In the current study, the wear behavior of as cast and 7 hr homogenized Al25Mg2Si2Cu4Ni alloy has been investigated. Microstructure, SEM and EDS results confirm the presence of different intermetallic and their effects on wear properties of Al25Mg2Si2Cu4Ni alloy in as cast as well as aged condition. Alloying main elements like Si, Cu, Mg and Ni partly dissolve in the primary α-Al matrix and to some amount present in the form of intermetallic phases. SEM structure of as cast alloy shows blocks of Mg2Si which is at random distributed in the aluminium matrix. Precipitates of Al2Cu in the form of Chinese script are also observed. Also `Q' phase (Al-Si-Cu-Mg) be distributed uniformly into the aluminium matrix. Few coarsened platelets of Ni are seen. In case of 7 hr homogenized samples blocks of Mg2Si get rounded at the corners, Platelets of Ni get fragmented and distributed uniformly in the aluminium matrix. Results show improved volumetric wear resistance and reduced coefficient of friction after homogenizing heat treatment.

Effects of Al2O3 and CaO/SiO2 Ratio on Phase Equilbria in the ZnO-"FeO"-Al2O3-CaO-SiO2 System in Equilibrium with Metallic Iron

NASA Astrophysics Data System (ADS)

Zhao, Baojun; Hayes, Peter C.; Jak, Evgueni

2011-02-01

The phase equilibria and liquidus temperatures in the ZnO-"FeO"-Al2O3-CaO-SiO2 system in equilibrium with metallic iron have been determined experimentally in the temperature range 1383 K to 1573 K (1150 °C to 1300 °C). The experimental conditions were selected to characterize lead blast furnace and imperial smelting furnace slags. The results are presented in a form of pseudoternary sections ZnO-"FeO"-(Al2O3 + CaO + SiO2) with fixed CaO/SiO2 and (CaO + SiO2)/Al2O3 ratios. It was found that wustite and spinel are the major primary phases in the composition range investigated. Effects of Al2O3 concentration as well as the CaO/SiO2 ratio on the primary phase field, the liquidus temperature, and the partitioning of ZnO between liquid and solid phases have been discussed for zinc-containing slags.

Crystallographic study of Si and ZrN coated U-Mo atomised particles and of their interaction with al under thermal annealing

NASA Astrophysics Data System (ADS)

Zweifel, T.; Palancher, H.; Leenaers, A.; Bonnin, A.; Honkimaki, V.; Tucoulou, R.; Van Den Berghe, S.; Jungwirth, R.; Charollais, F.; Petry, W.

2013-11-01

A new type of high density fuel is needed for the conversion of research and test reactors from high to lower enriched uranium. The most promising one is a dispersion of atomized uranium-molybdenum (U-Mo) particles in an Al matrix. However, during in-pile irradiation the growth of an interaction layer between the U-Mo and the Al matrix strongly limits the fuel's performance. To improve the in-pile behaviour, the U-Mo particles can be coated with protective layers. The SELENIUM (Surface Engineering of Low ENrIched Uranium-Molybdenum) fuel development project consists of the production, irradiation and post-irradiation examination of 2 flat, full-size dispersion fuel plates containing respectively Si and ZrN coated U-Mo atomized powder dispersed in a pure Al matrix. In this paper X-ray diffraction analyses of the Si and ZrN layers after deposition, fuel plate manufacturing and thermal annealing are reported. It was found for the U-Mo particles coated with ZrN (thickness 1 μm), that the layer is crystalline, and exhibits lower density than the theoretical one. Fuel plate manufacturing does not strongly influence these crystallographic features. For the U-Mo particles coated with Si (thickness 0.6 μm), the measurements of the as received material suggest an amorphous state of the deposited layer. Fuel plate manufacturing strongly modifies its composition: Si reacts with the U-Mo particles and the Al matrix to grow U(Al, Si)3 and U3Si5 phases. Finally both coatings have shown excellent performances under thermal treatment by limiting drastically the U-Mo/Al interdiffusion. U(Al,Si)3 with two lattice parameters (4.16 Å and 4.21 Å), A distorted U3Si5 phase. Note that these phases were not present in the U-Mo(Si) powders. These phases are usually found in the Silicon rich diffusion layer (SiRDL) obtained in dispersed fuels (as-manufactured U-Mo/Al(Si) fuel plates [12,3] or annealed UMo(Si)/Al fuel rods [40]) as well as in diffusion couples (U-Mo/Al(Si7) [37-39] or U-Mo/Si [41]). This analysis is furthermore in full agreement with the SEM/EDX characterisations which have highlighted the growth of a SiRDL in these U-Mo(Si)/Al_P fuel plates [30]. However it must be stressed that the amount of these U(Al,Si)3 and U3Si5 crystalline phases (about 0.3 wt%) is lower than the one obtained for fuel plates containing 4-6 wt% Si in the matrix [12]. It equals to the SiRDL amount measured in the IRIS4_2.1%Si fuel plate. Using these HE-XRD measurements, the Si concentration in SiRDLs is evaluated to 51 at%. This value is somewhat higher than when measured by EDX: it has been estimated to 40 at% in [30]. U2Mo and α"-U phase for compacts annealed at 340 °C, U2Mo and α'-U phase for compacts annealed at 450 °C [43], gamma;-U-Mo and α'-U for compacts annealed at 550 °C. These results obtained on compacts are in good agreement with previous works performed on U-8Mo ingots (see Fig. 9A) -even if some differences in the α-U phase structure must be mentioned - and in very close agreement with recent studies on thermally annealed U-Mo/Al fuel plates. Indeed destabilisation products found in this work are identical to those identified after fuel plate annealing at 550 °C [25] and 450 °C [43]. Moreover this work helps establishing that destabilisation products are U2Mo and α"-U at lower temperatures (below 450 °C). This was first demonstrated on fuel plates annealed at 425 °C for more than 50 h [43] and this is confirmed here with the analysis of the compacts annealed at 340 °C during 130 days. Note finally that whatever the presence of a coating, destabilisation ratios are very close in compacts annealed in the same conditions (see Fig. 9B) and that destabilisation ratios show the expected increase between 2 and 4 h annealing at 550 °C. The non-annealed U-Mo(Si)/Al compact has been lost during fabrication.

Mechanical behavior of shock-wave consolidated nano and micron-sized aluminum/silicon carbide and aluminum/aluminum oxide two-phase systems characterized by light and electron metallography

NASA Astrophysics Data System (ADS)

Alba-Baena, Noe Gaudencio

This dissertation reports the results of the exploratory study of two-phase systems consisting of 150 microm diameter aluminum powder mechanically mixed with 30 nm and 30 microm diameter SiC and Al2O3 powders (in volume fractions of 2, 4, and 21 percent). Powders were mechanically mixed and green compacted to ˜80% theorical density in a series of cylindrical fixtures (steel tubes). The compacted arrangements were explosively consolidated using ammonium nitrate-fuel oil (ANFO) to form stacks of two-phase systems. As result, successfully consolidated cylindrical monoliths of 50 mm (height) x 32 mm (in diameter) were obtained. By taking advantage of the use of SWC (shock wave consolidation) and WEDM (wire-electric discharge machining), the heterogeneous systems were machined in a highly efficiency rate. The sample cuts used for characterization and mechanical properties testing, require the use of less that 10cc of each monolith, in consequence there was preserved an average of 60% of the obtained system monoliths. Consolidated test cylinders of the pure Al and two-phase composites were characterized by optical metallography and TEM. The light micrographs for the five explosively consolidated regimes: aluminum powder, nano and micron-sized Al/Al2O3 systems, and the nano and micron-sized Al/SiC systems exhibit similar ductility in the aluminum grains. Low volume fraction systems exhibit small agglomerations at the grain boundaries for the Al/Al2O3 system and the Al/SiC system reveal a well distributed phase at the grain boundaries. Large and partially bonded agglomerations were observable in the nano-sized high volume fraction (21%) systems, while the micron-sized Al/ceramic systems exhibit homogeneous distribution along the aluminum phase grains. TEM images showed the shock-induced dislocation cell structure, which has partially recrystallized to form a nano grain structure in the consolidated aluminum powder. Furthermore, the SiC nano-agglomerates appeared to have been shock consolidated into a contiguous phase regime bonded to aluminum grains in the nano-sized Al/SiC systems. Mechanical properties were measured from the pure Al powder reference monoliths showing that the starting Al powder had a Vickers hardness of ˜24HV 25; in contrast to pure Al explosively consolidated reference cylinders that had a residual hardness of ˜43HV25. Average Rockwell hardnesses were also compared with room temperature stress-strain data measured for tensile specimens cut from the test cylinders. The results were compared with rule-of-mixtures formalisms applied to these novel two-phase systems. Correspondingly the Rockwell hardness for 21% SiC and Al2O3 mixtures in Al increased by ˜60%, from the Al reference (single-phase) monolith; while the elongation declined by ˜60%. The prominent Al intergranular-like fracture within the 21% (volume) SiC or Al2O3 phase regime was observed by SEM. At 21% (volume) SiC a distinct 2-phase Al/SiC regime was formed with fracture occurring prominently in the SiC consolidated phase. The fracture surface features are somewhat characteristic of the signature variation in the stress-strain diagrams. The aluminum ductile-dimple fracture characteristics, the failure around the SiC particles and particle agglomerates producing the discontinuous yield-like phenomenon and the poor mechanical behavior of the nano-sized Al/SiC systems are characteristic of the significantly different fracture features.

Influence of surface morphology and UFG on damping and mechanical properties of composite reinforced with spinel MgAl{sub 2}O{sub 4}-SiC core-shell microcomposites

DOE Office of Scientific and Technical Information (OSTI.GOV)

Singh, Subhash; Pal, Kaushik, E-mail: pl_kshk@yaho

Interface between ceramic particulate and matrix is known to control the response of the materials and functionality of the composite. Among numerous physical properties, grain structure of the materials has also played a significant role in defining the behaviour of metal matrix composites. Usually, silicon carbide (SiC) particles show poor interfacial wettability in aluminium melt. Herein, we were successfully synthesized magnesium oxide (MgO) and nanocrystalline magnesium aluminate (MgAl{sub 2}O{sub 4}) spinel coated silicon carbide (SiC) core-shell micro-composites through sol-gel technique to improve the wettability of dispersoids. Core-shell structures of submicron size were thoroughly investigated by various characterization techniques. Further, aluminiummore » matrix composites incorporated with pristine SiC, MgO grafted SiC and MgAl{sub 2}O{sub 4} grafted SiC particles were fabricated by stir casting technique, respectively. Additionally, as-cast composites were processed via friction stir processing (FSP) technique to observe the influence of grain refinement on mechanical and damping properties. Electron back scattered diffraction (EBSD), Field emission scanning electron microscopy (FE-SEM) and X-ray energy dispersion spectroscopy (EDX) analysis were conducted for investigating grain size refinement, adequate dispersion, stability and de-agglomeration of encapsulated SiC particles in aluminium matrix. The mechanical as well as thermal cyclic (from − 100 to 400 °C) damping performance of the as-cast and friction stir processed composites were studied, respectively. Finally, the enhanced properties were attributable to reduced agglomeration, stabilization and proper dispersion of the tailored SiC particles Al matrix. - Highlights: •Synthesizing a novel coating layer of MgO and MgAl{sub 2}O{sub 4} spinel onto SiC particles •Significant improvement in UTS and hardness by reinforcing tailored SiC in Al •Significant grain refinements were obtained through FSP •SiC/MgAl{sub 2}O{sub 4}/Al exhibits ~ 61% higher storage modulus as compare to pure Al after FSP.« less

Comparative study of the influence of natural convection on directional solidification of Al 3.5 wt% Ni and Al 7 wt% Si alloys

NASA Astrophysics Data System (ADS)

Zhou, B. H.; Jung, H.; Mangelinck-Noël, N.; Nguyen-Thi, H.; Billia, B.; Liu, Q. S.; Lan, C. W.

We present numerical simulations of thermosolutal convection for directional solidification of Al 3.5 wt% Ni and Al 7 wt% Si. Numerical results predict that fragmentation of dendrite arms resulting from dissolution could be favored in Al 7 wt% Si, but not in Al 3.5 wt% Ni. Corresponding experiments are in qualitative agreement with the numerical predictions. Distinguishing the two fragmentation mechanisms, namely dissolution and remelting, is critical during experiments on earth, when fluid flow is dominant.

Processing of In-Situ Al-AlN Metal Matrix Composites via Direct Nitridation Method

DTIC Science & Technology

1998-04-01

to prepare the aluminum melts with desired chemical compositions. Table 1. Chemical compositions of the starting materials. Alloy Mg Fe Cr Si Ni Al...Al 0.001 0.11 0.001 0.04 0.005 bal. Alloy Al Fe Cr Si Ni Mg Mg 0.01 0.12 0.001 0.03 0.006 bal. The ingots were initially cut to chunks with...hours. Figure 26 shows the optical micrographs obtained from the ingots after nitridation reaction of the alloys initially containing Al- 5wt .% Si

Direct spectroscopic evidence for isolated silanols in SiO x/Al 2O 3 and their formation mechanism

DOE PAGES

Mouat, Aidan R.; Kobayashi, Takeshi; Pruski, Marek; ...

2017-02-27

Here, the preparation and unambiguous characterization of isolated Brønsted-acidic silanol species on silica–alumina catalysts presents a key challenge in the rational design of solid acid catalysts. In this report, atomic layer deposition (ALD) and liquid-phase preparation (chemical liquid deposition, CLD) are used to install the SiO x sites on Al 2O 3 catalysts using the same Si source (tetraethylorthosilicate, TEOS). The ALD-derived and CLD-derived SiO x sites are probed with dynamic nuclear polarization (DNP)-enhanced 29Si– 29Si double-quantum/single-quantum (DQ/SQ) correlation NMR spectroscopy. The investigation reveals conclusively that the SiO x/Al 2O 3 material prepared by ALD and CLD, followed by calcinationmore » under an O 2 stream, contains fully spatially isolated Si species, in contrast with those resulting from the calcination under static air, which is widely accepted as a postgrafting treatment for CLD. Insight into the formation mechanism of these sites is obtained via in situ monitoring of the TEOS + γ-Al 2O 3 reaction in an environmental diffuse reflectance infrared Fourier transform spectroscopy (DRIFTS) cell. Upon calcination, the DRIFTS spectra of SiO x/Al 2O 3 reveal a signature unambiguously assignable to isolated Brønsted-acidic silanol species. Surprisingly, the results of this study indicate that the method of preparing SiO x/Al 2O 3 catalysts is less important to the final structure of the silanol sites than the post-treatment conditions. This finding should greatly simplify the methods for synthesizing site-isolated, Brønsted-acidic SiO x/Al 2O 3 catalysts.« less

Cavity-Free, Matrix-Addressable Quantum Dot Architecture for On-Chip Optical Switching

DTIC Science & Technology

2013-04-01

or photo-induced bleaching. Given their intrinsically low IEP (~3, close to that of SiO2) they are ideal candidates for our electrostatic self...are currently investigating usage of our method on substrates with high IEPs such as Al2O3, Si3N4, and ITO. By using nanoparticle emitters with...intrinsically high IEPs , such as MgO nanocubes and ZnO nanocrystals, we can expand the range of applicability of our self-assembly technique. Personnel

DOE Office of Scientific and Technical Information (OSTI.GOV)

Kurishima, Kazunori, E-mail: ce41034@meiji.ac.jp; Nabatame, Toshihide, E-mail: NABATAME.Toshihide@nims.go.jp; Shimizu, Maki

To investigate the influence of ionic/covalent interface of Al{sub 2}O{sub 3}/SiO{sub 2} gate insulator on the electrical properties of thin-film transistors (TFTs) with ionic Ga-In-Zn-O (GIZO) semiconducting channel layers, Al{sub 2}O{sub 3} layers of different thickness were introduced between SiO{sub 2} and GIZO using plasma-enhanced atomic layer deposition. The GIZO layers were obtained by DC magnetron sputtering using a GIZO target (Ga:In:Zn = 1:1:1 mol. %). The GIZO TFTs with an Al{sub 2}O{sub 3}/SiO{sub 2} gate insulator exhibited positive threshold voltage (V{sub th}) shift (about 1.1 V), V{sub th} hysteresis suppression (0.23 V), and electron mobility degradation (about 13%) compared with thosemore » of a GIZO TFT with SiO{sub 2} gate insulator by the influence of ionic/ionic and ionic/covalent interface at Al{sub 2}O{sub 3}/GIZO and Al{sub 2}O{sub 3}/SiO{sub 2}, respectively. To clarify the origin of the positive V{sub th} shift, the authors estimated the shifts of flatband voltage (0.4 V) due to the dipole and the fixed charge (−1.1 × 10{sup 11}/cm{sup 2}) at Al{sub 2}O{sub 3}/SiO{sub 2} interface, from capacitance–voltage data for Pt/Al{sub 2}O{sub 3}/SiO{sub 2}/p-Si capacitors. Based on these experimental data, the authors found that the positive V{sub th} shift (1.1 V) could be divided into three components: the dipole (−0.4 V) and fixed charge (0.15 V) at the SiO{sub 2}/Al{sub 2}O{sub 3} interface, and the fixed charge (1.35 V) at the Al{sub 2}O{sub 3}/GIZO interface. Finally, it is noted that heterointerface of SiO{sub 2}/Al{sub 2}O{sub 3}/GIZO stacks is important not only to recognize mechanism of V{sub th} shift but also to design future TFTs with high-k dielectrics and low operating voltage.« less

Precursor routes to quaternary intermetallics: Synthesis, crystal structure, and physical properties of clathrate-II Cs8Na16Al24Si112

NASA Astrophysics Data System (ADS)

Wei, Kaya; Dong, Yongkwan; Nolas, George S.

2016-05-01

A new quaternary clathrate-II composition, Cs8Na16Al24Si112, was synthesized by kinetically controlled thermal decomposition (KCTD) employing both NaSi and NaAlSi as the precursors and CsCl as a reactive flux. The crystal structure and composition of Cs8Na16Al24Si112 were investigated using both Rietveld refinement and elemental analysis, and the temperature dependent transport properties were investigated. Our results indicate that KCTD with multiple precursors is an effective method for the synthesis of multinary inorganic phases that are not easily accessible by traditional solid-state synthesis or crystal growth techniques.

Oxidation precursor dependence of atomic layer deposited Al2O3 films in a-Si:H(i)/Al2O3 surface passivation stacks.

PubMed

Xiang, Yuren; Zhou, Chunlan; Jia, Endong; Wang, Wenjing

2015-01-01

In order to obtain a good passivation of a silicon surface, more and more stack passivation schemes have been used in high-efficiency silicon solar cell fabrication. In this work, we prepared a-Si:H(i)/Al2O3 stacks on KOH solution-polished n-type solar grade mono-silicon(100) wafers. For the Al2O3 film deposition, both thermal atomic layer deposition (T-ALD) and plasma enhanced atomic layer deposition (PE-ALD) were used. Interface trap density spectra were obtained for Si passivation with a-Si films and a-Si:H(i)/Al2O3 stacks by a non-contact corona C-V technique. After the fabrication of a-Si:H(i)/Al2O3 stacks, the minimum interface trap density was reduced from original 3 × 10(12) to 1 × 10(12) cm(-2) eV(-1), the surface total charge density increased by nearly one order of magnitude for PE-ALD samples and about 0.4 × 10(12) cm(-2) for a T-ALD sample, and the carrier lifetimes increased by a factor of three (from about 10 μs to about 30 μs). Combining these results with an X-ray photoelectron spectroscopy analysis, we discussed the influence of an oxidation precursor for ALD Al2O3 deposition on Al2O3 single layers and a-Si:H(i)/Al2O3 stack surface passivation from field-effect passivation and chemical passivation perspectives. In addition, the influence of the stack fabrication process on the a-Si film structure was also discussed in this study.

Evidences for vertical charge dipole formation in charge-trapping memories and its impact on reliability

NASA Astrophysics Data System (ADS)

Padovani, Andrea; Arreghini, Antonio; Vandelli, Luca; Larcher, Luca; bosch, Geert Van den; Houdt, Jan Van

2012-07-01

We demonstrate the formation of a vertical charge dipole in the nitride layer of TaN/Al2O3/Si3N4/SiO2/Si memories and use dedicated experiments and device simulations to investigate its dependence on program and erase conditions. We show that the polarity of the dipole depends on the program/erase operation sequence and demonstrate that it is at the origin of the charge losses observed during retention. This dipole severely affects the retention of mildly programmed and erased states, representing a serious reliability concern especially for multi-level applications.

Low Z elements (Mg, Al, and Si) K-edge X-ray absorption spectroscopy in minerals and disordered systems

NASA Astrophysics Data System (ADS)

Ildefonse, Ph.; Calas, G.; Flank, A. M.; Lagarde, P.

1995-05-01

Soft X-ray absorption near edge spectroscopy (XANES) and extended X-ray absorption fine structure (EXAFS) spectroscopy have been performed at the Mg-, Al- and Si-K edges in order to establish the ability of this spectroscopy to derive structural information in disordered solids such as glasses and gels. Mg- and Al-K XANES are good structural probes to determine the coordination state of these elements in important minerals, glasses and gels. In a CaOsbnd MgOsbnd 2SiO2 glass Mg XANES spectra differ from that found in the crystalline equivalent, with a significant shift of the edge maxima to lower energy, consistent with a CN lower than 6. Mg-EXAFS on the same sample are in agreement and indicate the presence of 5-coordinated Mg with Mgsbnd O distances of 2.01Å. In aluminosilicate gels, Alsbnd K XANES has been used to investigate the [4]Al/Altotal ratios. These ratios increase as the Al/Si ratios decrease. Aluminosilicate and ferric-silicate gels were studied by using Sisbnd K edge XANES. XANES spectra differ significantly among the samples studied. Aluminosilicate gels with Al/Si= 1 present a different Al and Si local environment from that known in clay minerals with the same Al/Si ratio. The gel-to-mineral transformation thus implies a dissolution-recrystallization mechanism. On the contrary, ferric-silicate gel presents a Si local environment close to that found in nontronite which may be formed by a long range ordering of the initial gels.

Gas diffusion ultrabarriers on polymer substrates using Al2O3 atomic layer deposition and SiN plasma-enhanced chemical vapor deposition

NASA Astrophysics Data System (ADS)

Carcia, P. F.; McLean, R. S.; Groner, M. D.; Dameron, A. A.; George, S. M.

2009-07-01

Thin films grown by Al2O3 atomic layer deposition (ALD) and SiN plasma-enhanced chemical vapor deposition (PECVD) have been tested as gas diffusion barriers either individually or as bilayers on polymer substrates. Single films of Al2O3 ALD with thicknesses of ≥10 nm had a water vapor transmission rate (WVTR) of ≤5×10-5 g/m2 day at 38 °C/85% relative humidity (RH), as measured by the Ca test. This WVTR value was limited by H2O permeability through the epoxy seal, as determined by the Ca test for the glass lid control. In comparison, SiN PECVD films with a thickness of 100 nm had a WVTR of ˜7×10-3 g/m2 day at 38 °C/85% RH. Significant improvements resulted when the SiN PECVD film was coated with an Al2O3 ALD film. An Al2O3 ALD film with a thickness of only 5 nm on a SiN PECVD film with a thickness of 100 nm reduced the WVTR from ˜7×10-3 to ≤5×10-5 g/m2 day at 38 °C/85% RH. The reduction in the permeability for Al2O3 ALD on the SiN PECVD films was attributed to either Al2O3 ALD sealing defects in the SiN PECVD film or improved nucleation of Al2O3 ALD on SiN.

From Serenity to Langemak - A regional chemical setting for Mare Crisium

NASA Technical Reports Server (NTRS)

Hubbard, N. J.; Keith, J. E.; Vilas, F.

1978-01-01

The chemistry of the region surrounding Mare Crisium is described using improved Al/Si and Mg/Si intensity ratios derived from Apollo 15 X-ray fluorescence measurements. Mg/Si ratios are shown to increase from 0.6 in the region east of Mare Smythii to 1.0 in western Mare Serenitatis, while Al/Si ratios show sharp decreases in all mare areas. It is concluded that the terra (nonmare) material has a uniform Al/Si ratio, hence plagioclase content, and increases in the Mg/Si ratio in terra material imply similar increases of Mg in the pyroxenes and olivines of this material. The observed diversity of terra soils can be explained by an originally chemically diverse region not homogenized by heavy bombardment, or by volcanism subsequent to bombardment. Maria Crisium, Serenitatis and Smythii are found to be filled with low albedo materials which have a wide range of Mg/Si values, with small and apparently consistent differences in Al/Si ratio.

Electric Characteristic Enhancement of an AZO/Si Schottky Barrier Diode with Hydrogen Plasma Surface Treatment and AlxOx Guard Ring Structure.

PubMed

Li, Chien-Yu; Cheng, Min-Yu; Houng, Mau-Phon; Yang, Cheng-Fu; Liu, Jing

2018-01-08

In this study, the design and fabrication of AZO/n-Si Schottky barrier diodes (SBDs) with hydrogen plasma treatment on silicon surface and Al x O x guard ring were presented. The Si surface exhibited less interface defects after the cleaning process following with 30 w of H₂ plasma treatment that improved the switching properties of the following formed SBDs. The rapid thermal annealing experiment also held at 400 °C to enhance the breakdown voltage of SBDs. The edge effect of the SBDs was also suppressed with the Al x O x guard ring structure deposited by the atomic layer deposition (ALD) at the side of the SBDs. Experimental results show that the reverse leakage current was reduced and the breakdown voltage increased with an addition of the Al x O x guard ring. The diode and fabrication technology developed in the study were applicable to the realization of SBDs with a high breakdown voltage (>200 V), a low reverse leakage current density (≤72 μA/mm²@100 V), and a Schottky barrier height of 1.074 eV.

Electrochemical impedance spectroscopy for quantitative interface state characterization of planar and nanostructured semiconductor-dielectric interfaces

NASA Astrophysics Data System (ADS)

Meng, Andrew C.; Tang, Kechao; Braun, Michael R.; Zhang, Liangliang; McIntyre, Paul C.

2017-10-01

The performance of nanostructured semiconductors is frequently limited by interface defects that trap electronic carriers. In particular, high aspect ratio geometries dramatically increase the difficulty of using typical solid-state electrical measurements (multifrequency capacitance- and conductance-voltage testing) to quantify interface trap densities (D it). We report on electrochemical impedance spectroscopy (EIS) to characterize the energy distribution of interface traps at metal oxide/semiconductor interfaces. This method takes advantage of liquid electrolytes, which provide conformal electrical contacts. Planar Al2O3/p-Si and Al2O3/p-Si0.55Ge0.45 interfaces are used to benchmark the EIS data against results obtained from standard electrical testing methods. We find that the solid state and EIS data agree very well, leading to the extraction of consistent D it energy distributions. Measurements carried out on pyramid-nanostructured p-Si obtained by KOH etching followed by deposition of a 10 nm ALD-Al2O3 demonstrate the application of EIS to trap characterization of a nanostructured dielectric/semiconductor interface. These results show the promise of this methodology to measure interface state densities for a broad range of semiconductor nanostructures such as nanowires, nanofins, and porous structures.

Production of extreme-purity aluminum and silicon by fractional crystallization processing

NASA Astrophysics Data System (ADS)

Dawless, R. K.; Troup, R. L.; Meier, D. L.; Rohatgi, A.

1988-06-01

Large scale fractional crystallization is used commercially at Alcoa to produce extreme purity aluminum (99.999+% Al). The primary market is sputtering targets used to make interconnects for integrated circuits. For some applications the impurities uranium and thorium are reduced to less than 1 ppbw to avoid "soft errors" associated with α particle emission. The crystallization process achieves segregation coefficients which are close to theoretical at normal yields, and this, coupled with the scale of the units, allows practical production of this material. The silicon purification process involves crystallization of Si from molten aluminum alloys containing about 30% silicon. The crystallites from this process are further treated to remove residual Al and an extreme purity ingot is obtained. This material is considered suitable for single crystal or ribbon type photovoltaic cells and for certain IC applications, including highly doped substrates used for epitaxial growth. In production of both extreme purity Al and Si, impurities are rejected to the remaining melt as the crystals form and some separation is achieved by draining this downgraded melt from the unit. Purification of this downgrade by crystallization has also been demonstrated for both systems and is important for achieving high recoveries.

Carbon, nitrogen, magnesium, silicon, and titanium isotopic compositions of single interstellar silicon carbide grains from the Murchison carbonaceous chondrite

NASA Technical Reports Server (NTRS)

Hoppe, Peter; Amari, Sachiko; Zinner, Ernst; Ireland, Trevor; Lewis, Roy S.

1994-01-01

Seven hundred and twenty SiC grains from the Murchison CM2 chondrite, ranging in size from 1 to 10 micrometers, were analyzed by ion microprobe mass spectrometry for their C-isotopic compositions. Subsets of the grains were also analyzed for N (450 grains), Si (183 grains), Mg (179 grains), and Ti (28 grains) isotopes. These results are compared with previous measurements on 41 larger SiC grains (up to 15 x 26 micrometers) from a different sample of Murchison analyzed by Virag et al. (1992) and Ireland, Zinner, & Amari (1991a). All grains of the present study are isotopically anomalous with C-12/C-13 ratios ranging from 0.022 to 28.4 x solar, N-14/N-15 ratios from 0.046 to 30 x solar, Si-29/Si-28 from 0.54 to 1.20 x solar, Si-30/Si-28 from 0.42 to 1.14 x solar, Ti-49/Ti-48 from 0.96 to 1.95 x solar, and Ti-50/Ti-48 from 0.94 to 1.39 x solar. Many grains have large Mg-26 excesses from the decay of Al-26 with inferred Al-26/Al-27 ratios ranging up to 0.61, or 12,200 x the ratio of 5 x 10(exp -5) inferred for the early solar system. Several groups can be distinguished among the SiC grains. Most of the grains have C-13 and N-14 excesses, and their Si isotopic compositions (mostly excesses in Si-29 and Si-30) plot close to a slope 1.34 line on a Delta Si-29/Si-28 versus Delta Si-30/Si-28 three-isotope plot. Grains with small C-12/C-13 ratios (less than 10) tend to have smaller or no N-14 excesses and high Al-26/Al-27 ratios (up to 0.01). Grains with C-12/C-13 greater than 150 fall into two groups: grains X have N-15 excesses and Si-29 and Si-30 deficits and the highest (0.1 to 0.6) Al-26/Al-27 ratios; grains Y have N-14 excesses and plot on a slope 0.35 line on a Si three-isotope plot. In addition, large SiC grains of the Virag et al. (1992) study fall into three-distinct clusters according to their C-, Si-, and Ti-isotopic compositions. The isotopic diversity of the grains and the clustering of their isotopic compositions imply distinct and multiple stellar sources. The C- and N-isotopic compositions of most grains are consistent with H-burning in the CNO cycle. These and s-process Kr, Xe, Ba, and Nd suggest asymptotic giant branch (AGB) or Wolf-Rayet stars as likely sources for the grains, but existing models of nucleosynthesis in these stellar sites fail to account in detail for all the observed isotopic compositions. Special problems are posed by grains with C-12/C-13 less than 10 and almost normal and heavy N-isotopic compositions. Also the Si- and Ti-isotopic compositions, with excesses in Si-29 and Si-30 relative to Si-28 and excesses in all Ti isotopes relative to Ti-48, do not precisely conform with the compositions predicted for slow neutron capture. Additional theoretical efforts are needed to achieve an understanding of the isotopic composition of the SiC grains and their stellar sources.

Fluxless aluminum brazing

DOEpatents

Werner, W.J.

1974-01-01

This invention relates to a fluxless brazing alloy for use in forming brazed composites made from members of aluminum and its alloys. The brazing alloy consists of 35-55% Al, 10--20% Si, 25-60% Ge; 65-88% Al, 2-20% Si, 2--18% In; 65--80% Al, 15-- 25% Si, 5- 15% Y. (0fficial Gazette)

Sialon ceramic compositions and methods of fabrication

DOEpatents

O'Brien, Michael H.; Park, Blair H.

1994-01-01

A method of fabricating a SiAlON ceramic body includes: a) combining quantities of Si.sub.3 N.sub.4, Al.sub.2 O.sub.3 and CeO.sub.2 to produce a mixture; b) forming the mixture into a desired body shape; c) heating the body to a densification temperature of from about 1550.degree. C. to about 1850.degree. C.; c) maintaining the body at the densification temperature for a period of time effective to densify the body; d) cooling the densified body to a devitrification temperature of from about 1200.degree. C. to about 1400.degree. C.; and e) maintaining the densified body at the devitrification temperature for a period of time effective to produce a .beta.'-SiAlON crystalline phase in the body having elemental or compound form Ce incorporated in the .beta.'-SiAlON crystalline phase. Further, a SiAlON ceramic body comprises: a) an amorphous phase; and b) a crystalline phase, the crystalline phase comprising .beta.'-SiAlON having lattice substituted elemental or compound form Ce.

Atomistic simulations of thermal transport in Si and SiGe based materials: From bulk to nanostructures

NASA Astrophysics Data System (ADS)

Savic, Ivana; Mingo, Natalio; Donadio, Davide; Galli, Giulia

2010-03-01

It has been recently proposed that Si and SiGe based nanostructured materials may exhibit low thermal conductivity and overall promising properties for thermoelectric applications. Hence there is a considerable interest in developing accurate theoretical and computational methods which can help interpret recent measurements, identify the physical origin of the reduced thermal conductivity, as well as shed light on the interplay between disorder and nanostructuring in determining a high figure of merit. In this work, we investigate the capability of an atomistic Green's function method [1] to describe phonon transport in several types of Si and SiGe based systems: amorphous Si, SiGe alloys, planar and nanodot Si/SiGe multilayers. We compare our results with experimental data [2,3], and with the findings of molecular dynamics simulations and calculations based on the Boltzmann transport equation. [1] I. Savic, N. Mingo, and D. A. Stewart, Phys. Rev. Lett. 101, 165502 (2008). [2] S.-M. Lee, D. G. Cahill, and R. Venkatasubramanian, Appl. Phys. Lett. 70, 2957 (1997). [3] G. Pernot et al., submitted.

Synthesis of Silicon Nitride and Silicon Carbide Nanocomposites through High Energy Milling of Waste Silica Fume for Structural Applications

NASA Astrophysics Data System (ADS)

Suri, Jyothi

Nanocomposites have been widely used in a multitude of applications in electronics and structural components because of their improved mechanical, electrical, and magnetic properties. Silicon nitride/Silicon carbide (Si 3N4/SiC) nanocomposites have been studied intensively for low and high temperature structural applications, such as turbine and automobile engine components, ball bearings, turbochargers, as well as energy applications due to their superior wear resistance, high temperature strength, high oxidation resistance and good creep resistance. Silica fume is the waste material produced during the manufacture of silicon and ferro-silicon alloys, and contains 94 to 97 wt.% SiO2. In the present dissertation, the feasibility of using waste silica fume as the raw material was investigated to synthesize (I) advanced nanocomposites of Si3N4/SiC, and (2) porous silicon carbide (SiC) for membrane applications. The processing approach used to convert the waste material to advanced ceramic materials was based on a novel process called, integrated mechanical and thermal activation process (IMTA) process. In the first part of the dissertation, the effect of parameters such as carbothermic nitridation and reduction temperature and the graphite concentration in the starting silica fume plus graphite mixture, were explored to synthesize nanocomposite powders with tailored amounts of Si3N4 and SiC phases. An effective way to synthesize carbon-free Si3N 4/SiC composite powders was studied to provide a clear pathway and fundamental understanding of the reaction mechanisms. Si3N4/SiC nanocomposite powders were then sintered using two different approaches, based on liquid phase sintering and spark plasma sintering processes, with Al 2O3 and Y2O3 as the sintering aids. The nanocomposites were investigated for their densification behavior, microstructure, and mechanical properties. Si3N4/SiC nanocomposites thus obtained were found to possess superior mechanical properties at much lower costs. The second part of the work has comprised of the successful fabrication of bilayered SiC membranes with a graded porosity, consisting of porous nano-SiC layer on the surface of a porous coarse-grained SiC support layer. The effect of different particle sizes of SiC in the support layers was systematically studied. Also, the effects of sintering temperature were investigated to control the pore size, particle size and overall density of the bi-layered SiC membrane.

High-Pressure Spark Plasma Sintering (HP SPS): A Promising and Reliable Method for Preparing Ti–Al–Si Alloys

PubMed Central

Knaislová, Anna; Novák, Pavel; Cygan, Sławomir; Jaworska, Lucyna; Cabibbo, Marcello

2017-01-01

Ti–Al–Si alloys are prospective material for high-temperature applications. Due to low density, good mechanical properties, and oxidation resistance, these intermetallic alloys can be used in the aerospace and automobile industries. Ti–Al–Si alloys were prepared by powder metallurgy using reactive sintering, milling, and spark plasma sintering. One of the novel SPS techniques is high-pressure spark plasma sintering (HP SPS), which was tested in this work and applied to a Ti–10Al–20Si intermetallic alloy using a pressure of 6 GPa and temperatures ranging from 1318 K (1045 °C) to 1597 K (1324 °C). The low-porosity consolidated samples consist of Ti5Si3 silicides in an aluminide (TiAl) matrix. The hardness varied between 720 and 892 HV 5. PMID:28772824

Transverse-Weld Tensile Properties of a New Al-4Cu-2Si Alloy as Filler Metal

NASA Astrophysics Data System (ADS)

Sampath, K.

2009-12-01

AA2195, an Al-Cu-Li alloy in the T8P4 age-hardened condition, is a candidate aluminum armor for future combat vehicles, as this material offers higher static strength and ballistic protection than current aluminum armor alloys. However, certification of AA2195 alloy for armor applications requires initial qualification based on the ballistic performance of welded panels in the as-welded condition. Currently, combat vehicle manufacturers primarily use gas metal arc welding (GMAW) process to meet their fabrication needs. Unfortunately, a matching GMAW consumable electrode is currently not commercially available to allow effective joining of AA2195 alloy. This initial effort focused on an innovative, low-cost, low-risk approach to identify an alloy composition suitable for effective joining of AA2195 alloy, and evaluated transverse-weld tensile properties of groove butt joints produced using the identified alloy. Selected commercial off-the-shelf (COTS) aluminum alloy filler wires were twisted to form candidate twisted filler rods. Representative test weldments were produced using AA2195 alloy, candidate twisted filler rods and gas tungsten arc welding (GTAW) process. Selected GTA weldments produced using Al-4wt.%Cu-2wt.%Si alloy as filler metal consistently provided transverse-weld tensile properties in excess of 275 MPa (40 ksi) UTS and 8% El (over 25 mm gage length), thereby showing potential for acceptable ballistic performance of as-welded panels. Further developmental work is required to evaluate in detail GMAW consumable wire electrodes based on the Al-Cu-Si system containing 4.2-5.0 wt.% Cu and 1.6-2.0 wt.% Si.

Swelling of U-7Mo/Al-Si dispersion fuel plates under irradiation - Non-destructive analysis of the AFIP-1 fuel plates

NASA Astrophysics Data System (ADS)

Wachs, D. M.; Robinson, A. B.; Rice, F. J.; Kraft, N. C.; Taylor, S. C.; Lillo, M.; Woolstenhulme, N.; Roth, G. A.

2016-08-01

Extensive fuel-matrix interactions leading to plate pillowing have proven to be a significant impediment to the development of a suitable high density low-enriched uranium molybdenum alloy (U-Mo) based dispersion fuel for high power applications in research reactors. The addition of silicon to the aluminum matrix was previously demonstrated to reduce interaction layer growth in mini-plate experiments. The AFIP-1 project involved the irradiation, in-canal examination, and post-irradiation examination of two fuel plates. The irradiation of two distinct full size, flat fuel plates (one using an Al-2wt%Si matrix and the other an Al-4043 (∼4.8 wt% Si) matrix) was performed in the INL ATR reactor in 2008-2009. The irradiation conditions were: ∼250 W/cm2 peak Beginning Of Life (BOL) power, with a ∼3.5e21 f/cm3 peak burnup. The plates were successfully irradiated and did not show any pillowing at the end of the irradiation. This paper reports the results and interpretation of the in-canal and post-irradiation non-destructive examinations that were performed on these fuel plates. It further compares additional PIE results obtained on fuel plates irradiated in contemporary campaigns in order to allow a complete comparison with all results obtained under similar conditions. Except for a brief indication of accelerated swelling early in the irradiation of the Al-2Si plate, the fuel swelling is shown to evolve linearly with the fission density through the maximum burnup.

Heat capacity measurements for cryolite (Na3AlF6) and reactions in the system NaFeAlSiOF

USGS Publications Warehouse

Anovitz, Lawrence M.; Hemingway, B.S.; Westrum, E.F.; Metz, G.W.; Essene, E.J.

1987-01-01

The heat capacity of cryolite (Na3AlF6) has been measured from 7 to 1000 K by low-temperature adiabatic and high-temperature differential scanning calorimetry. Low-temperature data were obtained on material from the same hand specimen in the calorimetric laboratories of the University of Michigan and U.S. Geological Survey. The results obtained are in good agreement, and yield average values for the entropy of cryolite of: S0298 = 238.5 J/mol KS0T-S0298 = 145.114 ln T+ 193.009*10-3T- 10.366* 105 T2- 872.89 J/mol K (273-836.5 K)??STrans = 9.9J/mol KS0T-S0298 =198.414 ln T+73.203* 10-3T-63.814* 105 T2-1113.11 J/mol K (836.5-1153 K) with the transition temperature between ??- and ??-cryolite taken at 836.5 K. These data have been combined with data in the literature to calculate phase equilibria for the system NaFeAlSiOF. The resultant phase diagrams allow constraints to be placed on the fO2, fF2, aSiO2 and T conditions of formation for assemblages in alkalic rocks. A sample application suggests that log fO2 is approximately -19.2, log fF2 is -31.9 to -33.2, and aSiO2 is -1.06 at assumed P T conditions of 1000 K, 1 bar for the villiaumite-bearing Ilimaussaq intrusion in southwestern Greenland. ?? 1987.

Preparation of Al-Si Master Alloy by Electrochemical Reduction of Volcanic Rock in Cryolite Molten Salt

NASA Astrophysics Data System (ADS)

Liu, Aimin; Shi, Zhongning; Xu, Junli; Hu, Xianwei; Gao, Bingliang; Wang, Zhaowen

2016-06-01

Volcanic rock found in the Longgang Volcano Group in Jilin Province of China has properties essentially similar to Apollo lunar soils and previously prepared lunar soil simulants, such as Johnson Space Center Lunar simulant and Minnesota Lunar simulant. In this study, an electrochemical method of preparation of Al-Si master alloy was investigated in 52.7 wt.%NaF-47.3 wt.%AlF3 melt adding 5 wt.% volcanic rock at 1233 K. The cathodic electrochemical process was studied by cyclic voltammetry, and the results showed that the cathodic reduction of Si(IV) is a two-step reversible diffusion-controlled reaction. Si(IV) is reduced to Si(II) by two electron transfers at -1.05 V versus platinum quasi-reference electrode in 52.7 wt.%NaF-47.3 wt.%AlF3 molten salt adding 5 wt.% volcanic rock, while the reduction peak at -1.18 V was the co-deposition of aluminum and silicon. In addition, the cathodic product obtained by galvanostatic electrolysis for 4 h was analyzed by means of x-ray diffraction, x-ray fluorescence, scanning electron microscopy and energy dispersive spectrometry. The results showed that the phase compositions of the products are Al, Si, Al5FeSi, and Al3.21Si0.47, while the components are 90.5 wt.% aluminum, 4.4 wt.% silicon, 1.9 wt.% iron, and 0.2 wt.% titanium.

Production of Solar-grade Silicon by Halidothermic Reduction of Silicon Tetrachloride

NASA Astrophysics Data System (ADS)

Yasuda, Kouji; Saegusa, Kunio; Okabe, Toru H.

2011-02-01

To develop a new production process for solar-grade Si, a fundamental study on halidothermic reduction based on the subhalide reduction of SiCl4 by Al subchloride reductant was carried out at 1273 K (1000 °C). Aluminum subchloride reductant was produced by reacting AlCl3 vapor with metallic Al. Silicon tetrachloride was reduced to Si in a gas-phase reaction by vapors of Al subchloride reductant. Silicon deposits produced in the halidothermic reduction were analyzed by X-ray diffraction (XRD), scanning electron microscopy (SEM), and X-ray fluorescence (XRF). The Al content in the Si deposits was no more than 0.5 at pct. The Si deposits have a fibrous or hexagonal columnar morphology with diameters ranging from 100 nm to several tens of microns. The reaction was discussed by comparison with the results of the conventional aluminothermic reduction of SiCl4. Moreover, the halidothermic reduction reactions were analyzed from thermodynamical viewpoints. This study demonstrates the feasibility of a halidothermic reduction for producing solar-grade Si with high productivity.

Effects of Ti and La Additions on the Microstructures and Mechanical Properties of B-Refined and Sr-Modified Al-11Si Alloys

NASA Astrophysics Data System (ADS)

Li, Chenlin; Pan, Ye; Lu, Tao; Jing, Lijun; Pi, Jinhong

2018-03-01

The effects of Ti and La additions on the microstructures and mechanical properties of B-refined and Sr-modified Al-11Si alloys were investigated in the present work. The interactions among Ti, La, B and Sr elements were discussed employing microstructure observation, thermal analysis and tensile test, respectively. It was found that the addition of 0.05 wt% B induces a transformation of eutectic Si from finely fibrous to coarsely plate-like morphology in the Al-11Si alloy with 0.02 wt%Sr modification, owing to the poisoning of IIT mechanism, and the eutectic Si grows only with TPRE mechanism. Both titanium and lanthanum can neutralize the co-poisoning effect between Sr and B in the Al-11Si alloy, but the neutralizing effect of La is dependent on the addition sequence. The combinative addition of La and B elements promotes the effective refinement of α-Al grains, but an inhomogeneous modification of eutectic Si phases is also observed, leading to a slightly decrease in the elongation.

Cross sections for He and Ne isotopes in natural Mg, Al, and Si, He isotopes in CaF2, Ar isotopes in natural Ca, and radionuclides in natural Al, Si, Ti, Cr, and stainless steel induced by 12- to 45-MeV protons

NASA Technical Reports Server (NTRS)

Walton, J. R.; Heymann, D.; Yaniv, A.; Edgerley, D.; Rowe, M. W.

1976-01-01

Stacks of thin Mg, Al, Si, Ca, CaF2, Ti, and stainless steel foils were bombarded in twelve irradiations by a variable energy cyclotron. Cross sections are reported for He and Ne in natural Mg, Al, and Si, and for He in CaF2, and for Ar in natural Ca, as determined from mass spectrometer analysis of the inert gases. In addition, cross sections of Na-22 in natural Al and Si, of V-48 in natural Ti, and of Cr-51, Mn-52, and Co-57 in stainless steel are reported. From these were deduced Cr-51 and Mn-52 cross sections in natural Cr.

NanoSIMS isotope studies of rare types of presolar silicon carbide grains from the Murchison meteorite: Implications for supernova models and the role of 14C

NASA Astrophysics Data System (ADS)

Hoppe, Peter; Pignatari, Marco; Kodolányi, János; Gröner, Elmar; Amari, Sachiko

2018-01-01

We have conducted a NanoSIMS ion imaging survey of about 1800 presolar silicon carbide (SiC) grains from the Murchison meteorite. A total of 21 supernova (SN) X grains, two SN C grains, and two putative nova grains were identified. Six particularly interesting grains, two X and C grains each and the two putative nova grains were subsequently studied in greater detail, namely, for C-, N-, Mg-Al-, Si-, S-, and Ca-Ti-isotopic compositions and for the initial presence of radioactive 26Al (half life 716,000 yr), 32Si (half life 153 yr), and 44Ti (half life 60 yr). Their isotope data along with those of three X grains from the literature were compared with model predictions for 15 M⊙ and 25 M⊙ Type II supernovae (SNe). The best fits were found for 25 M⊙ SN models that consider for the He shell the temperature and density of a 15 M⊙ SN and ingestion of H into the He shell before the explosion. In these models a C- and Si-rich zone forms at the bottom of the He burning zone (C/Si zone). The region above the C/Si zone is termed the O/nova zone and exhibits the isotopic fingerprints of explosive H burning. Satisfactory fits of measured C-, N-, and Si-isotopic compositions and of 26Al/27Al ratios require small-scale mixing of matter originating from a region extending over 0.2 M⊙ for X and C grains and over 0.4 M⊙ for one of the putative nova grains, involving matter from a thin Si-rich layer slightly below the C/Si zone, the C/Si zone, and the O/nova zone. Simultaneous fitting of 14N/15N and 26Al/27Al requires a C-N fractionation of a factor of 50 during SiC condensation. This leads to preferential incorporation of radioactive 14C (half life 5700 yr) over directly produced 14N and can account for the 14N/15N along with 26Al/27Al ratios as observed in the SiC grains. The good fit for one of the putative nova grains along with its high 26Al/27Al points towards a SN origin and supports previous suggestions that some grains classified as nova grains might be from SNe. Apparent problems with the small-scale mixing scheme considered here are C/O ratios that are mostly <1 if C-, N-, and Si-isotopic compositions and 26Al/27Al ratios are simultaneously matched, underproduction of 32Si, and overproduction of 44Ti. This confirms the limitations of one-dimensional hydrodynamical models for H ingestion and stresses the need to better study the convective-boundary mixing mechanisms at the bottom of the convective He shell in massive star progenitors. This is crucial to define the effective size of the C/Si zone formed by the SN shock. The comparison between the Si isotope data of the SN grains and the models gives a hint that the predicted 30Si is too high at the bottom of the He burning shell.

Hydroconversion of methyl laurate on bifunctional Ni2P/AlMCM-41 catalyst prepared via in situ phosphorization using triphenylphosphine

NASA Astrophysics Data System (ADS)

Zhao, Sha; Zhang, Zhena; Zhu, Kongying; Chen, Jixiang

2017-05-01

A series of Ni2P/AlMCM-41-x bifunctional catalysts with different Si/Al ratios (x) were synthesized by in situ phosphorization of Ni/AlMCM-41-x with triphenylphosphine (nominal Ni/P ratio of 0.75) at 300 °C on a fixed-bed reactor. For comparison, NiP/AlMCM-41-5-TPR was also prepared by the TPR method from the supported nickel phosphate with the Ni/P ratio of 1.0, during which metallic Ni rather than Ni2P formed. TEM images show that Ni and Ni2P particles uniformly distributed in Ni2P/AlMCM-41-x and NiP/AlMCM-41-5-TPR. The Ni2P/AlMCM-41-x acidity increased with decreasing the Si/Al ratio. In the hydroconversion of methyl laurate, the conversions were close to 100% on all catalysts at 360 °C, 3.0 MPa, methyl laurate WHSV of 2 h-1 and H2/methyl laurate ratio of 25. As to Ni2P/AlMCM-41-x, with decreasing the Si/Al ratio, the total selectivity to C11 and C12 hydrocarbons decreased, while the total selectivity to isoundecane and isododecane (Si-C11+i-C12) firstly increased and then decreased. Ni2P/AlMCM-41-5 gave the largest Si-C11+i-C12 of 43.2%. While NiP/AlMCM-41-5-TPR gave higher Si-C11+i-C12 than Ni2P/AlMCM-41-5, it was more active for the undesired Csbnd C bond cleavage and methanation. We propose that the in-situ phosphorization adopted here is a promising approach to preparing Ni2P-based bifunctional catalysts.

Development of lithium disilicate based glass-ceramics =

NASA Astrophysics Data System (ADS)

Fernandes, Hugo Alexandre Goncalves da Rocha

O principal objectivo deste estudo foi o desenvolvimento de vitroceramicos a base de dissilicato de litio no sistema Li2O-K2O-Al2O3-SiO2 contendo uma razao molar SiO2/Li2O muito afastada da do dissilicato de litio (Li2Si2O5) usando composicoes simples e a tecnica tradicional de fusao-vazamento de vidro de forma a obter materiais com propriedades mecanicas, termicas, quimicas e electricas superiores que permitam a utilizacao destes materiais em diversas aplicacoes funcionais. Investigou-se o fenomeno de separacao de fases, a cristalizacao e as relacoes estrutura-propriedades de vidros nos sistemas Li2O-SiO2, Li2O-Al2O3-SiO2 e Li2O-K2O-Al2O3-SiO2. Os vidros nos sistemas Li2O-SiO2 e Li2O-Al2O3-SiO2 apresentaram fraca densificacao e resultaram em materiais frageis, contrastando com a boa sinterizacao dos vidros no sistema Li2O-K2O-Al2O3-SiO2. Pequenas adicoes de Al2O3 e K2O ao sistema Li2O-SiO2 permitiram controlar a separacao de fases devido a formacao de especies de Al(IV) que confirmaram o papel de Al2O3 como formador de rede. Os compactos de po de vidro das composicoes contendo Al2O3 e K2O tratados termicamente resultaram em vitroceramicos bem densificados, apresentando dissilicato de litio como a principal fase cristalina, e valores de resistencia mecanica a flexao, resistencia quimica e condutividade electrica (173-224 MPa, 25-50 mg/cm2 e 2´10-18 S/cm, respectivamente) que possibilitam a utilizacao destes materiais em diversas aplicacoes funcionais. A adicao de P2O5, TiO2 e ZrO2 ao sistema Li2O-K2O-Al2O3-SiO2 como agentes nucleantes revelou que os vidros contendo apresentaram cristalizacao em volume, com a formacao de metassilicato de litio a temperaturas mais baixas e dissilicato de litio para as temperaturas mais elevadas, enquanto a adicao de zirconia reduz o grau de segregacao, aumenta a polimerizacao da matriz vitrea e desloca o valor de Tg para temperaturas superiores, inibindo a cristalizacao.

Al2O3/SiON stack layers for effective surface passivation and anti-reflection of high efficiency n-type c-Si solar cells

NASA Astrophysics Data System (ADS)

Thi Thanh Nguyen, Huong; Balaji, Nagarajan; Park, Cheolmin; Triet, Nguyen Minh; Le, Anh Huy Tuan; Lee, Seunghwan; Jeon, Minhan; Oh, Donhyun; Dao, Vinh Ai; Yi, Junsin

2017-02-01

Excellent surface passivation and anti-reflection properties of double-stack layers is a prerequisite for high efficiency of n-type c-Si solar cells. The high positive fixed charge (Q f) density of N-rich hydrogenated amorphous silicon nitride (a-SiNx:H) films plays a poor role in boron emitter passivation. The more the refractive index ( n ) of a-SiNx:H is decreased, the more the positive Q f of a-SiNx:H is increased. Hydrogenated amorphous silicon oxynitride (SiON) films possess the properties of amorphous silicon oxide (a-SiOx) and a-SiNx:H with variable n and less positive Q f compared with a-SiNx:H. In this study, we investigated the passivation and anti-reflection properties of Al2O3/SiON stacks. Initially, a SiON layer was deposited by plasma enhanced chemical vapor deposition with variable n and its chemical composition was analyzed by Fourier transform infrared spectroscopy. Then, the SiON layer was deposited as a capping layer on a 10 nm thick Al2O3 layer, and the electrical and optical properties were analyzed. The SiON capping layer with n = 1.47 and a thickness of 70 nm resulted in an interface trap density of 4.74 = 1010 cm-2 eV-1 and Q f of -2.59 = 1012 cm-2 with a substantial improvement in lifetime of 1.52 ms after industrial firing. The incorporation of an Al2O3/SiON stack on the front side of the n-type solar cells results in an energy conversion efficiency of 18.34% compared to the one with Al2O3/a-SiNx:H showing 17.55% efficiency. The short circuit current density and open circuit voltage increase by up to 0.83 mA cm-2 and 12 mV, respectively, compared to the Al2O3/a-SiNx:H stack on the front side of the n-type solar cells due to the good anti-reflection and front side surface passivation.

Growth mechanism of Al2O3 film on an organic layer in plasma-enhanced atomic layer deposition

NASA Astrophysics Data System (ADS)

Lee, J. Y.; Kim, D. W.; Kang, W. S.; Lee, J. O.; Hur, M.; Han, S. H.

2018-01-01

Differences in the physical and chemical properties of Al2O3 films on a Si wafer and a C x H y layer were investigated in the case of plasma-enhanced atomic layer deposition. The Al2O3 film on the Si had a sharper interface and lower thickness than the Al2O3 film on the C x H y . The amount of carbon-impurity near the interface was larger for Al2O3 on the C x H y than for Al2O3 on the Si. In order to understand these differences, the concentrations of Al, O, C, and Si atoms through the Al2O3 films were evaluated by using x-ray photoelectron spectroscopy (XPS) depth profiling. The emission intensities of CO molecule were analyzed for different numbers of deposition cycles, by using time-resolved optical emission spectroscopy (OES). Finally, a growth mechanism for Al2O3 on an organic layer was proposed, based on the XPS and OES results for the Si wafer and the C x H y layer.

Growth mechanisms of GaSb heteroepitaxial films on Si with an AlSb buffer layer

DOE Office of Scientific and Technical Information (OSTI.GOV)

Vajargah, S. Hosseini; Botton, G. A.; Brockhouse Institute for Materials Research, McMaster University, Hamilton, Ontario L8S 4M1

2013-09-21

The initial growth stages of GaSb epilayers on Si substrates and the role of the AlSb buffer layer were studied by high-angle annular dark-field scanning transmission electron microscopy (HAADF-STEM). Heteroepitaxy of GaSb and AlSb on Si both occur by Volmer-Weber (i.e., island mode) growth. However, the AlSb and GaSb islands have distinctly different characteristics as revealed through an atomic-resolution structural study using Z-contrast of HAADF-STEM imaging. While GaSb islands are sparse and three dimensional, AlSb islands are numerous and flattened. The introduction of 3D island-forming AlSb buffer layer facilitates the nucleation of GaSb islands. The AlSb islands-assisted nucleation of GaSbmore » islands results in the formation of drastically higher quality planar film at a significantly smaller thickness of films. The interface of the AlSb and GaSb epilayers with the Si substrate was further investigated with energy dispersive X-ray spectrometry to elucidate the key role of the AlSb buffer layer in the growth of GaSb epilayers on Si substrates.« less

Wear behaviour and morphology of stir cast aluminium/SiC nanocomposites

NASA Astrophysics Data System (ADS)

Tanwir Alam, Md; Arif, Sajjad; Husain Ansari, Akhter

2018-04-01

Wear and friction play a vital role in the service life of components. Aluminium matrix nanocomposites possess tremendous potential for a number of applications in addition to their present uses. It is valuable to the field of newer materials for better performance in tribological applications. In this work, dry sliding wear, friction coefficient and morphology of aluminium alloy (A356) reinforced with silicon carbide nanoparticles (SiCn) were investigated. A356/SiCn nanocomposites (AMNCs) containing 1–5 weight percentage of SiCn were prepared through two-step stir casting process via mechanical ball milling. The wear test was conducted on pin-on-disc test apparatus. Regression analysis was performed to develop mathematical functions to fit the experimental data points. Morphological studies of Al and SiCn as-received, wear debris and worn surfaces were further analysed by SEM along with EDS. The occurrence of oxide layers was observed on worn surfaces. Iron trace was identified by wear debris. It was found that the wear loss and friction coefficient were strongly influenced by mechanical milling and SiCn content. The results exhibited that the friction coefficient reduces with the addition of SiCn as well as with the increase in load. However, wear resistance increases as the reinforcement content increases because of the embedding and wettability effects.

Experimental Assessment of Two Exothermic Systems to Neutralize Landmines

DTIC Science & Technology

2006-02-01

S M 21 A T/ st ee l 4. 9 2 kg (5 lb ) 6” 1’ 0 5” D et on at io n of re si du al e xp lo si ve , cr at er 1 .0 m x...P T- M i-B a III A T/ ba ke lit e 7. 2 5. 0 kg (1 1 lb ) 40 ” 14 ’ 2 8” S m al l D et on at io n of re si du al e xp lo si ve... S m al l c ra te r

Facile fabrication of nanofluidic diode membranes using anodic aluminium oxide.

PubMed

Wu, Songmei; Wildhaber, Fabien; Vazquez-Mena, Oscar; Bertsch, Arnaud; Brugger, Juergen; Renaud, Philippe

2012-09-21

Active control of ion transport plays important roles in chemical and biological analytical processes. Nanofluidic systems hold the promise for such control through electrostatic interaction between ions and channel surfaces. Most existing experiments rely on planar geometry where the nanochannels are generally very long and shallow with large aspect ratios. Based on this configuration the concepts of nanofluidic gating and rectification have been successfully demonstrated. However, device minimization and throughput scaling remain significant challenges. We report here an innovative and facile realization of hetero-structured Al(2)O(3)/SiO(2) (Si) nanopore array membranes by using pattern transfer of self-organized nanopore structures of anodic aluminum oxide (AAO). Thanks to the opposite surface charge states of Al(2)O(3) (positive) and SiO(2) (negative), the membrane exhibits clear rectification of ion current in electrolyte solutions with very low aspect ratios compared to previous approaches. Our hetero-structured nanopore arrays provide a valuable platform for high throughput applications such as molecular separation, chemical processors and energy conversion.

First-principles study of the structure properties of Al(111)/6H-SiC(0001) interfaces

NASA Astrophysics Data System (ADS)

Wu, Qingjie; Xie, Jingpei; Wang, Changqing; Li, Liben; Wang, Aiqin; Mao, Aixia

2018-04-01

This paper presents a systematic study on the energetic and electronic structure of the Al(111)/6H-SiC(0001) interfaces by using first-principles calculation with density functional theory (DFT). There are all three situations for no-vacuum layer of Al/SiC superlattics, and two cases of C-terminated and Si-terminated interfaces are compared and analyzed. Through the density of states analysis, the initial information of interface combination is obtained. Then the supercells are stretched vertically along the z-axis, and the fracture of the interface is obtained, and it is pointed out that C-terminated SiC and Al interfaces have a better binding property. And, the fracture positions of C-terminated and Si-terminated interfaces are different in the process of stretching. Then, the distance variation in the process of stretching, the charge density differences, and the distribution of the electrons near the interface are analyzed. Al these work makes the specific reasons for the interface fracture are obtained at last.

Microstructural investigation of Sr-modified Al-15 wt%Si alloys in the range from micrometer to atomic scale.

PubMed

Timpel, M; Wanderka, N; Vinod Kumar, G S; Banhart, J

2011-05-01

Strontium-modified Al-15 wt%Si casting alloys were investigated after 5 and 60 min of melt holding. The eutectic microstructures were studied using complementary methods at different length scales: focused ion beam-energy selective backscattered tomography, transmission electron microscopy and 3D atom probe. Whereas the samples after 5 min of melt holding show that the structure of eutectic Si changes into a fine fibrous morphology, the increase of prolonged melt holding (60 min) leads to the loss of Sr within the alloy with an evolution of an unmodified eutectic microstructure displaying coarse interconnected Si plates. Strontium was found at the Al/Si eutectic interfaces on the side of the eutectic Al region, measured by 3D atom probe. The new results obtained using 3D atom probe shed light on the location of Sr within the Al-Si eutectic microstructure. Copyright © 2010 Elsevier B.V. All rights reserved.

MgSiO3-FeSiO3-Al2O3 in the Earth's lower mantle: Perovskite and garnet at 1200 km depth

NASA Technical Reports Server (NTRS)

O'Neill, Bridget; Jeanloz, Raymond

1994-01-01

Natural pyroxene and garnet starting material are used to study the effects of joint Fe and Al substitution into MgSiO3 perovskite at approxmiately 50 GPa. Garnet is found to coexist with perovskite in samples containing both Fe and Al to pressures occurring deep into the lower mantel (approximately 1200 km depth). The volume of the perovskite unit cell is V(sub o(Angstrom(exp 3)) = 162.59 + 5.95x(sub FeSiO3) + 10.80x(sub Al2O3) with aluminum causing a significant increase in the distortion from the ideal cubic cell. On the basis of a proposed extension of the MgSiO3-Al2O3 high-pressure phase diagram toward FeSiO3, Fe is shown to partition preferentially into the garnet phase. The stability of garnet deep into the lower mantel may hinder the penetration of subducted slabs below the transition zone.

(abstract) Transmission Electron Microscopy of Al(sub x)Ga(sub 1-x)N/SiC Multilayer Structures Grown on Sapphire Substrates

NASA Technical Reports Server (NTRS)

Pike, W. T.; George, T.; Khan, M. A.; Kuznia, J. N.

1994-01-01

The potential of wide-band-gap III-V nitrides as ultraviolet sensors and light emitters has prompted an increasing amount of work recently, including the fabrication of the first UV sensors from as-deposited single crystal GaN. We have used high resolution transmission electron microscopy (TEM) to study the microstructure of two novel developments of wide-band-gap III-V nitrides: the growth of ultra-short period GaN/AlN superlattices; and the incorporation of SiC layers into Al(sub x)Ga(sub 1-x)N structures. By varying the relative periods in a GaN/AlN superlattice, the band gap of the composite can be tailored to lie between the elemental values of 365 nm for GaN and 200 nm for AlN. The group IV semiconductor, SiC, has a wide band-gap and has a close lattice match (less than 3 %) to Al(sub x)Ga(sub 1-x)N for growth on the basal plane. Demonstration of epitaxial growth for Al(sub x)Ga(sub 1-x)N/SiC multilayers would introduce a wide band-gap analog to the already existing family of III-V and Si(sub 1-x)Ge(sub x) heteroepitaxial growth systems. Although good quality growth of GaN on SiC substrates has been demonstrated, Al(sub x)Ga(sub 1-x)N/SiC multilayer structures have never been grown and the interfacial structure is unknown.

Study on the Anti-Poison Performance of Al–Y–P Master Alloy for Impurity Ca in Aluminum Alloys

PubMed Central

Zuo, Min; Dong, Yu; Zhao, Degang; Wang, Yan; Teng, Xinying

2017-01-01

In this article, the anti-poison performance of novel Al–6Y–2P master alloy for impurity Ca in hypereutectic Al–Si alloys was investigated in detail. According to the microstructural analysis, it can be found that the primary Si and eutectic Si particles could be relatively modified and refined. In order to investigate the influence mechanism of Ca on the limited refinement performance of Al–6Y–2P master alloy, types of Al–xSi–2Ca–3Y–1P (x = 0, 6, 12, 18, and 30) alloys were prepared. It is observed that Ca takes the form of more stable Ca3P2 compounds by reacting with YP, and the surface of Ca3P2 particles are unsmooth, and even some have wrinkles in Al Al–2Ca–3Y–1P alloy. With the increase of Si content in Al–xSi–2Ca–3Y–1P (x = 6, 12, 18 and 30) systems, the multi-encapsulation structures, i.e., the phosphide (AlP and YP), hexagonal Al2Si2Ca, the Al3Si2Y2 or primary Si from inside to outside in order were examined.The excapsulation of YP and AlP caused by Al2Si2Ca might be the reason for the limited refinement effect of Al–6Y–2P master alloy for hypereutectic Al–18Si alloys. PMID:29186862

A new approach to epitaxially grow high-quality GaN films on Si substrates: the combination of MBE and PLD.

PubMed

Wang, Wenliang; Wang, Haiyan; Yang, Weijia; Zhu, Yunnong; Li, Guoqiang

2016-04-22

High-quality GaN epitaxial films have been grown on Si substrates with Al buffer layer by the combination of molecular beam epitaxy (MBE) and pulsed laser deposition (PLD) technologies. MBE is used to grow Al buffer layer at first, and then PLD is deployed to grow GaN epitaxial films on the Al buffer layer. The surface morphology, crystalline quality, and interfacial property of as-grown GaN epitaxial films on Si substrates are studied systematically. The as-grown ~300 nm-thick GaN epitaxial films grown at 850 °C with ~30 nm-thick Al buffer layer on Si substrates show high crystalline quality with the full-width at half-maximum (FWHM) for GaN(0002) and GaN(102) X-ray rocking curves of 0.45° and 0.61°, respectively; very flat GaN surface with the root-mean-square surface roughness of 2.5 nm; as well as the sharp and abrupt GaN/AlGaN/Al/Si hetero-interfaces. Furthermore, the corresponding growth mechanism of GaN epitaxial films grown on Si substrates with Al buffer layer by the combination of MBE and PLD is hence studied in depth. This work provides a novel and simple approach for the epitaxial growth of high-quality GaN epitaxial films on Si substrates.

Atomic-level study on mechanical properties and strengthening mechanisms of Al/SiC nano-composites

NASA Astrophysics Data System (ADS)

Huo, Shiyan; Xie, Lijing; Xiang, Junfeng; Pang, Siqin; Hu, Fang; Umer, Usama

2018-02-01

Molecular dynamics (MD) models for the study on the mechanical properties of β-SiC particles-reinforced aluminum matrix nano-composites (Al/SiC nano-composites) are established. The nano-composites in the model are fabricated by a powder metallurgy (P/M) process, followed by a hot isostatic pressing and then annealing to room temperature. The fabricated nano-composites have dense and even distributions of reinforced particles. Then representative volume elements (RVEs) of the fabricated nano-composites are built by adding periodic boundary conditions (PBCs). In this way, RVEs with different volume fractions and particle sizes of SiC are produced and put into the simulation of tension tests. The elasticity and strength in single axial tension obtained from MD analysis are in good agreement with those calculated according to the rule of mixture. It is found that the dispersion of SiC particles into the Al matrix leads to a significant enhancement in the strength of nano-composites compared to pure Al, which is also dramatically affected by both the volume fraction and particle size. Additionally, the Al/SiC nano-composites with finer SiC particles get greater enhancement in the mechanical behavior than those with coarser ones. MD analysis clearly shows the contributions of load-transfer effect, thermal mismatch strengthening and Orowan strengthening to the strengthening of Al/SiC nano-composites.