Science.gov

Sample records for al-doped zno azo

  1. Synthesis and Characterization of Al doped ZnO (AZO) by Sol-gel Method

    NASA Astrophysics Data System (ADS)

    Munawaroh, H.; Wahyuningsih, S.; Ramelan, A. H.

    2017-02-01

    Al doped ZnO (AZO) nanoparticles have been successfully synthesized by the simple sol-gel method. The starting materials of Al doped ZnO were Zn(CH3COO)2·2H2O and Al(OH)(CH3COO)2. Preparation of AZO using polyethylene glycol as a surfactant. The solution of precursors was stirred at 60 °C for 2 hour in the conditions of Al contents are 0%, 2%, 3% and 4% (g/mL), respectivelly. In the last step reaction, gelation occurred from solution to sol gel. The sol gel then were dried at 60 °C following by annealing process for crystalization. By this simple sol gel method, the nanoparticles have been produced. The characterizations were conducted X-Ray Diffraction (XRD), Scanning Electron Microscopy (SEM), Fourrier Transform Infra-Red (FTIR) and X-Ray Fluorescence (XRF). XRD analysis reveals that all samples has crystallizes in polycrystalline nature and exhibit no other impurity phase. The variation of Al doped ZnO slighly affect the crystallinity and crystal size. Both crystallinity and crystal size decrease with increasing of Al content in AZO. Morphology of AZO shown the particle distribution more equitable with increased Al content. The synthesized AZO gaved shift peak absorption of asymetric and symetric vibrations of Zn-O-Zn around wavelengths of 680 cm-1 and 1630 cm-1 atributed of the uptake of the Al-O-Al bond instead Zn-O-Zn. XRF analysis shown that the increase ratio of Al entering into Zn influenced the Al dopant concentration.

  2. Arrays of ZnO/AZO (Al-doped ZnO) nanocables: a higher open circuit voltage and remarkable improvement of efficiency for CdS-sensitized solar cells.

    PubMed

    Deng, Jianping; Wang, Minqiang; Liu, Jing; Song, Xiaohui; Yang, Zhi

    2014-03-15

    Photoelectrode of nanocables (NCs) structure of ZnO nanowires (NWs) coated with Al-doped ZnO (AZO) shells was investigated for CdS quantum dots sensitized solar cells (QDSSCs). ZnO NWs serve as the frame for the preparation of AZO shells, in which electron transport more rapidly due to the more higher electron mobility of AZO (n-ZnO) than that of i-ZnO. AZO shells were assembled onto the surface of ZnO NWs via a spin-coating method. Optical band-gap of the ZnO/AZO films varies from 3.19 eV for pure ZnO to 3.25 eV for AZO (15%) depending on the Al-doping concentration. The PL intensity of AZO/ZnO, V(oc), J(sc) and η of the cells first increased and then decreased with the increase in the Al-doping (from 0% to 20%) and post-annealed temperature. Remarkably, the value of V(oc) can achieve above 0.8 V after Al-doping. The dark current and absorption spectrum provided direct evidence of the increase in J(sc) and V(oc), respectively. Moreover, we discussed the effect of Al-doping on optical band-gap of the samples and the transfer of electron.

  3. Semiconducting properties of Al doped ZnO thin films.

    PubMed

    Al-Ghamdi, Ahmed A; Al-Hartomy, Omar A; El Okr, M; Nawar, A M; El-Gazzar, S; El-Tantawy, Farid; Yakuphanoglu, F

    2014-10-15

    Aluminum doped ZnO (AZO) thin films were successfully deposited via spin coating technique onto glass substrates. Structural properties of the films were analyzed by X-ray diffraction, atomic force microscopy (AFM) and energy dispersive X-ray spectroscopy. X-ray diffraction results reveal that all the films are polycrystalline with a hexagonal wurtzite structure with a preferential orientation according to the direction (002) plane. The crystallite size of ZnO and AZO films was determined from Scherrer's formula and Williamson-Hall analysis. The lattice parameters of the AZO films were found to decrease with increasing Al content. Energy dispersive spectroscopy (EDX) results indicate that Zn, Al and O elements are present in the AZO thin films. The electrical conductivity, mobility carriers and carrier concentration of the films are increased with increasing Al doping concentration. The optical band gap (Eg) of the films is increased with increasing Al concentration. The AZO thin films indicate a high transparency in the visible region with an average value of 86%. These transparent AZO films may be open a new avenue for optoelectronic and photonic devices applications in near future.

  4. Gas sensing properties of Al-doped ZnO for UV-activated CO detection

    NASA Astrophysics Data System (ADS)

    Dhahri, R.; Hjiri, M.; El Mir, L.; Bonavita, A.; Iannazzo, D.; Latino, M.; Donato, N.; Leonardi, S. G.; Neri, G.

    2016-04-01

    Al-doped ZnO (AZO) samples were prepared using a modified sol-gel route and charaterized by means of trasmission electron microscopy, x-ray diffraction and photoluminescence analysis. Resistive planar devices based on thick films of AZO deposited on interdigitated alumina substrates were fabricated and investigated as UV light activated CO sensors. CO sensing tests were performed in both dark and illumination condition by exposing the samples to UV radiation (λ  =  400 nm).Under UV light, Al-doped ZnO gas sensors operated at lower temperature than in dark. Furthermore, by photoactivation we also promoted CO sensitivity and made signal recovery of AZO sensors faster. Results demonstrate that Al-doped ZnO might be a promising sensing material for the detection of CO under UV illumination.

  5. Influence Al doped ZnO nanostructure on structural and optical properties

    NASA Astrophysics Data System (ADS)

    Ramelan, Ari Handono; Wahyuningsih, Sayekti; Chasanah, Uswatul; Munawaroh, Hanik

    2016-04-01

    The preparation of Al-doped ZnO (AZO) thin films prepared by the spin-coating method was reported. Preparation of AZO was conducted by annealing treatment at a temperature of 700°C. While the spin-coating process of AZO thin films were done at 2000 and 3000 rpm respectively. The structural properties of ZnO were determined by X- ray diffraction (XRD) analysis. ZnOnanostructure was formed after annealed at atemperature of 400°C.The morphology of ZnO was determined by Scanning Electron Microscopy (SEM) showed the irregular morphology about 30-50µm in size. Al doped on ZnO influenced the optical properties of those material. Increasing Al contain on ZnO cause of shifting to the lower wavelength. The optical properties of the ZnO as well as AZO films showed that higher reflectance on the ultraviolet region so those materials were used as anti-reflecting agent.Al addition significantly enhance the optical transparency and induce the blue-shift in optical bandgap of ZnO films.

  6. Synthesis and conductivity enhancement of Al-doped ZnO nanorod array thin films.

    PubMed

    Hsu, Chih-Hsiung; Chen, Dong-Hwang

    2010-07-16

    Al-doped ZnO (AZO) nanorod array thin films with various Al/Zn molar ratios were synthesized by chemical bath deposition. The resultant AZO nanorods were well-aligned at the glass substrate, growing vertically along the c-axis [001] direction. In addition, they had an average diameter of 64.7 +/- 16.8 nm and an average length of about 1.0 microm with the structure of wurtzite-type ZnO. Analyses of energy dispersive x-ray spectra and x-ray photoelectron spectra indicated that Al atoms had been doped into the ZnO crystal lattice. The doping of Al atoms did not result in significant changes in the structure and crystal orientation, but the electrical resistivity was found to increase first and then decrease with increasing Al content owing to the increase of carrier concentration and the decrease of mobility. In addition, the transmission in the visible region increased but the increase was reduced at higher Al doping levels. After hydrogen treatment, the morphology of the AZO nanorod array thin films remained unchanged. However, the electrical resistivity decreased significantly due to the formation of oxygen vacancies and interstitial hydrogen atoms. When the real Al/Zn molar ratio was about 3.7%, the conductivity was enhanced about 1000 times and a minimum electrical resistivity of 6.4 x 10( - 4) Omega cm was obtained. In addition, the transmission of the ZnO nanorod array thin film in the visible region was significantly increased but the increase was less significant for the AZO nanorod array thin film, particularly at higher Al doping levels. In addition, the current-voltage curves of the thin film devices with ZnO or AZO nanorod arrays revealed that AZO had a higher current response than ZnO and hydrogen treatment led to a more significant enhancement of current responses (about 100-fold).

  7. Structural defects and photoluminescence studies of sol-gel prepared ZnO and Al-doped ZnO films

    NASA Astrophysics Data System (ADS)

    Sandeep, K. M.; Bhat, Shreesha; Dharmaprakash, S. M.

    2016-11-01

    ZnO and Al-doped ZnO (AZO) films were synthesized using sol-gel spin-coating method. The powder XRD analysis revealed the stress relaxation mechanism upon Al doping in ZnO film. The reduction in the imaginary part of the dielectric constant and suppression of deep level acceptor type octahedral oxygen interstitial defects account for the reduction in carrier concentration in AZO with respect to ZnO. Electrical conductivity measurements and grain boundary conduction model are used to quantify the carrier concentration. From the Commission Internationale d'Eclairge diagram of ZnO and AZO, color parameters like dominant wavelength, color purity and luminosity are determined and reported for the first time. The prepared ZnO and AZO films show considerable blue emission. These films can be used for white light generation.

  8. Al-doped ZnO seed layer-dependent crystallographic control of ZnO nanorods by using electrochemical deposition

    SciTech Connect

    Son, Hyo-Soo; Choi, Nak-Jung; Kim, Kyoung-Bo; Kim, Moojin; Lee, Sung-Nam

    2016-10-15

    Highlights: • Polar and semipolar ZnO NRs were successfully achieved by hydrothermal synthesis. • Semipolar and polar ZnO NRs were grown on ZnO and AZO/m-sapphire, respectively. • Al % of AZO/m-sapphire enhanced the lateral growth rate of polar ZnO NRs. - Abstract: We investigated the effect of an Al-doped ZnO film on the crystallographic direction of ZnO nanorods (NRs) using electrochemical deposition. From high-solution X-ray diffraction measurements, the crystallographic plane of ZnO NRs grown on (1 0 0) ZnO/m-plane sapphire was (1 0 1). The surface grain size of the (100) Al-doped ZnO (AZO) film decreased with increasing Al content in the ZnO seed layer, implying that the Al dopant accelerated the three-dimensional (3D) growth of the AZO film. In addition, it was found that with increasing Al doping concentration of the AZO seed layer, the crystal orientation of the ZnO NRs grown on the AZO seed layer changed from [1 0 1] to [0 0 1]. With increasing Al content of the nonpolar (1 0 0) AZO seed layer, the small surface grains with a few crystallographic planes of the AZO film changed from semipolar (1 0 1) ZnO NRs to polar (0 0 1) ZnO NRs due to the increase of the vertical [0 0 1] growth rate of the ZnO NRs owing to excellent electrical properties.

  9. Effects of Al Doping on the Properties of ZnO Thin Films Deposited by Atomic Layer Deposition

    NASA Astrophysics Data System (ADS)

    Zhai, Chen-Hui; Zhang, Rong-Jun; Chen, Xin; Zheng, Yu-Xiang; Wang, Song-You; Liu, Juan; Dai, Ning; Chen, Liang-Yao

    2016-09-01

    The tuning of structural, optical, and electrical properties of Al-doped ZnO films deposited by atomic layer deposition technique is reported in this work. With the increasing Al doping level, the evolution from (002) to (100) diffraction peaks indicates the change in growth mode of ZnO films. Spectroscopic ellipsometry has been applied to study the thickness, optical constants, and band gap of AZO films. Due to the increasing carrier concentration after Al doping, a blue shift of band gap and absorption edge can be observed, which can be interpreted by Burstein-Moss effect. The carrier concentration and resistivity are found to vary significantly among different doping concentration, and the optimum value is also discussed. The modulations and improvements of properties are important for Al-doped ZnO films to apply as transparent conductor in various applications.

  10. Effects of Al Doping on the Properties of ZnO Thin Films Deposited by Atomic Layer Deposition.

    PubMed

    Zhai, Chen-Hui; Zhang, Rong-Jun; Chen, Xin; Zheng, Yu-Xiang; Wang, Song-You; Liu, Juan; Dai, Ning; Chen, Liang-Yao

    2016-12-01

    The tuning of structural, optical, and electrical properties of Al-doped ZnO films deposited by atomic layer deposition technique is reported in this work. With the increasing Al doping level, the evolution from (002) to (100) diffraction peaks indicates the change in growth mode of ZnO films. Spectroscopic ellipsometry has been applied to study the thickness, optical constants, and band gap of AZO films. Due to the increasing carrier concentration after Al doping, a blue shift of band gap and absorption edge can be observed, which can be interpreted by Burstein-Moss effect. The carrier concentration and resistivity are found to vary significantly among different doping concentration, and the optimum value is also discussed. The modulations and improvements of properties are important for Al-doped ZnO films to apply as transparent conductor in various applications.

  11. Substrate temperature effects on the electrical properties of sputtered Al doped ZnO thin films

    NASA Astrophysics Data System (ADS)

    Kim, Deok-Kyu; Kim, Hong-Bae

    2015-09-01

    Al doped ZnO (AZO) thin films were deposited on glass substrate by RF magnetron sputtering system. The dependence of structural, electrical, and optical properties on the substrate temperature variations in the range of 0-400 °C was investigated. The structural results reveal that the AZO films are (0 0 2) oriented and at 400 °C a considerable crystallinity enhancement of the films is observed. With increasing the substrate temperature, the resistivity is increased by decreasing of the mobility and carrier concentration. X-ray photoelectron spectroscopy (XPS) results show that the mobility and the carrier concentration are decreased by increasing the surface bonding and decreasing the Al content, respectively. In our case, the increase in substrate temperature suppressed the incorporation of Al atoms together with the decrease of oxygen vacancy. The improvement of Al doping efficiency is a very important factor to obtain better electrical properties at high substrate temperatures.

  12. Optical parameters of Al-doped ZnO nanorod array thin films grown via the hydrothermal method.

    PubMed

    Kim, Soaram; Kim, Min Su; Nam, Giwoong; Park, Hyunggil; Yoon, Hyunsik; Leem, Jae-Young

    2013-09-01

    ZnO seed layers were deposited onto a quartz substrate using the sol--gel method, and Al-doped ZnO (AZO) nanorod array thin films with different Al concentrations that ranged from 0 to 2.0 at. % were grown on the ZnO seed layers via the hydrothermal method. Optical parameters, including the optical band gap, the absorption coefficient, the Urbach energy, the refractive index, the dispersion parameter, and the optical conductivity, were studied to investigate the effects of Al doping on the optical properties of AZO nanorod array thin films. The optical band gaps of the ZnO and AZO nanorod array thin films were 3.206 at 0 at.%, 3.214 at 0.5 at.%, 3.226 at 1.5 at.%, and 3.268 at 2.0 at.%. The Urbach energy gradually decreased from 126 meV (0 at.%) to 70 meV (2.0 at.%) as the Al concentration was increased. The dispersion energy, the single-oscillator energy, the average oscillator wavelength, the average oscillator strength, the refractive index, and the optical conductivity of the AZO nanorod array thin films were all affected by Al doping.

  13. Work function increase of Al-doped ZnO thin films by B+ ion implantation.

    PubMed

    Hong, Sang-Jin; Heo, Gi-Seok; Park, Jong-Woon; Lee, In-Hwan; Choi, Bum-Ho; Lee, Jong-Ho; Park, Se-Yeon; Shin, Dong-Chan

    2007-11-01

    The work function of an Al-doped ZnO (AZO) thin film can be increased via B+ ion implantation from 3.92 eV up to 4.22 eV. The ion implantation has been carried out with the ion dose of 1 x 10(16) cm(-2) and ion energy of 5 keV. The resistance of the B+ implanted AZO films has been a bit raised, while their transmittance is slightly lowered, compared to those of un-implanted AZO films. These behaviors can be explained by the doping profile and the resultant band diagram. It is concluded that the coupling between the B+ ions and oxygen vacancies would be the main reason for an increase in the work function and a change in the other properties. We also address that the work function is more effectively alterable if the defect density of the top transparent conducting oxide layer can be controlled.

  14. Tailoring Energy Bandgap of Al Doped ZnO Thin Films Grown by Vacuum Thermal Evaporation Method.

    PubMed

    Vyas, Sumit; Singh, Shaivalini; Chakrabarti, P

    2015-12-01

    The paper presents the results of our experimental investigation pertaining to tailoring of energy bandgap and other associated characteristics of undoped and Al doped ZnO (AZO) thin film by varying the atomic concentration of Al in ZnO. Thin films of ZnO and ZnO doped with Al (1, 3, and 5 atomic percent (at.%)) were deposited on silicon substrate for structural characterization and on glass substrate for optical characterization. The dependence of structural and optical properties of Al doped ZnO on the atomic concentration of Al added to ZnO has been reported. On the basis of the experimental results an empirical formula has been proposed to calculate the energy bandgap of AZO theoretically in the range of 1 to 5 at.% of Al. The study revealed that AZO films are composed of smaller and larger number of grains as compared to pure ZnO counterpart and density of the grains was found to increase as the Al concentration increased (from 1 to 5 at.%). The transmittance in the visible region was greater than 90% and found to increase with increasing Al concentration up to 5 at.%. The optical bandgap was found to increase initially with increase in atomic concentration of Al concentration up to 3 at.% and decrease thereafter with increasing concentration of Al.

  15. Temperature dependent dual hydrogen sensor response of Pd nanoparticle decorated Al doped ZnO surfaces

    SciTech Connect

    Gupta, D.; Barman, P. B.; Hazra, S. K.; Dutta, D.; Kumar, M.; Som, T.

    2015-10-28

    Sputter deposited Al doped ZnO (AZO) thin films exhibit a dual hydrogen sensing response in the temperature range 40 °C–150 °C after surface modifications with palladium nanoparticles. The unmodified AZO films showed no response in hydrogen in the temperature range 40 °C–150 °C. The operational temperature windows on the low and high temperature sides have been estimated by isolating the semiconductor-to-metal transition temperature zone of the sensor device. The gas response pattern was modeled by considering various adsorption isotherms, which revealed the dominance of heterogeneous adsorption characteristics. The Arrhenius adsorption barrier showed dual variation with change in hydrogen gas concentration on either side of the semiconductor-to-metal transition. A detailed analysis of the hydrogen gas response pattern by considering the changes in nano palladium due to hydrogen adsorption, and semiconductor-to-metal transition of nanocrystalline Al doped ZnO layer due to temperature, along with material characterization studies by glancing incidence X-ray diffraction, atomic force microscopy, and transmission electron microscopy, are presented.

  16. Temperature dependent dual hydrogen sensor response of Pd nanoparticle decorated Al doped ZnO surfaces

    NASA Astrophysics Data System (ADS)

    Gupta, D.; Dutta, D.; Kumar, M.; Barman, P. B.; Som, T.; Hazra, S. K.

    2015-10-01

    Sputter deposited Al doped ZnO (AZO) thin films exhibit a dual hydrogen sensing response in the temperature range 40 °C-150 °C after surface modifications with palladium nanoparticles. The unmodified AZO films showed no response in hydrogen in the temperature range 40 °C-150 °C. The operational temperature windows on the low and high temperature sides have been estimated by isolating the semiconductor-to-metal transition temperature zone of the sensor device. The gas response pattern was modeled by considering various adsorption isotherms, which revealed the dominance of heterogeneous adsorption characteristics. The Arrhenius adsorption barrier showed dual variation with change in hydrogen gas concentration on either side of the semiconductor-to-metal transition. A detailed analysis of the hydrogen gas response pattern by considering the changes in nano palladium due to hydrogen adsorption, and semiconductor-to-metal transition of nanocrystalline Al doped ZnO layer due to temperature, along with material characterization studies by glancing incidence X-ray diffraction, atomic force microscopy, and transmission electron microscopy, are presented.

  17. Genesis of flake-like morphology and dye-sensitized solar cell performance of Al-doped ZnO particles: a study

    NASA Astrophysics Data System (ADS)

    Sengupta, D.; Mondal, B.; Mukherjee, K.

    2017-03-01

    In dye-sensitized solar cell (DSSC) application, the particulate morphologies of photo-anode facilitate efficient dye loading and thus lead to better photo-conversion efficiency than their thin film counterpart. However, till date, the electronic and optical properties as well as the DSSC application of Al-doped ZnO (AZO) particles as photo-anode material is studied less than thin films. Herein, phase formation behavior, morphology evolution, optical properties, and dye-sensitized solar cell performance of wet chemically prepared ZnO and AZO (dopant level: 1-4 mol%) particles are studied. It is found that Al doping modulates significantly the ZnO morphology which in turn results the maximum dye adsorption as well as best photo-conversion efficiency at optimum dopant concentration. Specifically, the nanoparticle of ZnO turns predominantly to flake-like morphology with a higher surface area when 2 mol% Al is doped. Such morphology modulation is expected, since the crystallinity, lattice parameters, and lattice strain of ZnO changes appreciably with Al doping. The variations of optical properties (absorbance, diffused reflectance, and band gap) of AZO materials as compared to primitive ZnO are also identified through UV-vis studies. An attempt is made here to correlate the structural features with the photovoltaic performances of ZnO and AZO.

  18. Electrical and optical properties of Al doped Zno film prepared by spray pyrolysis technique

    NASA Astrophysics Data System (ADS)

    Shrestha, Shankar Prasad; Basnet, Pradeep

    2008-04-01

    Transparent conducting thin films of zinc oxides and aluminum doped zinc oxide (AZO) were prepared by the spray pyrolysis technique using an aqueous solution of dehydrate zinc acetate (CH 3COOH. 2H IIO, pure- Merck A. R. grade) and hex hydrate aluminum chloride (AlCl 3 .6H IIO) on the micro glass slides. The prepared thin films are found to be highly adherent to the substrate and possess uniform conduction. The optical and electrical properties of the film were investigated in terms of different Al concentration in the starting solution and different substrate temperature. Four probe method in Van der pauw configuration was used for electrical resistivity measurements. The resistivity of Al doped film is observed to vary with doping concentration. The lowest resistivity is observed in the film doping with 2 at % [Al/Zn]. The Hall coefficient measurements show that both ZnO and AZO show the n-type conduction. The carrier concentration was observed to be highest at 2 at% of Al doping. The optical measurements of all the samples with aluminum concentrations was found to be >85 % showing the film to be highly transparent in nature. With increase in Al concentration, the optical band gap was observed increase from 3.27 eV to 3.41 eV.

  19. Dopant-induced bandgap shift in Al-doped ZnO thin films prepared by spray pyrolysis

    NASA Astrophysics Data System (ADS)

    Hung-Chun Lai, Henry; Basheer, Tahseen; Kuznetsov, Vladimir L.; Egdell, Russell G.; Jacobs, Robert M. J.; Pepper, Michael; Edwards, Peter P.

    2012-10-01

    A series of 1 at. % Al-doped ZnO (AZO) films were deposited onto glass substrates by a spray pyrolysis technique. We find that the observed blue shift in the optical bandgap of 1% AZO films is dominated by the Burstein Moss effect. The Fermi level for an 807 nm thick AZO film rose by some 0.16 eV with respect to the edge of the conduction band. By controlling the film thickness, all AZO films exhibit the same lattice strain values. The influence of strain-induced bandgap shift was excluded by selecting films with nearly the same level of bandgap volume-deformation potentials, and the differences in out-plain strain and in-plain stress remained effectively constant.

  20. Using the hydrothermal method to grow p-type ZnO nanowires on Al-doped ZnO thin film to fabricate a homojunction diode.

    PubMed

    Tseng, Yung-Kuan; Hung, Meng-Chun; Su, Shun-Lung; Li, Sheng-Kai

    2014-10-01

    In this study, the hydrothermal method is used to grow phosphorus-doped ZnO nanowires on Si/SiO2 substrates deposited with Al-doped ZnO thin film. This structure forms a homogeneous p-n junction. In this study, we are the pioneers to use ammonium hypophosphite (NH4H2PO2) as a source of phosphorus to prepare the precursor solution. Ammonium hypophosphite of different concentration levels is used to observe its effects on the growth of nanowires. The results show that the precursor solution prepared from ammonium hypophosphite can produce good crystalline ZnO nanowires while there is no linear relationship between the amounts and concentration levels of phosphorus doped into the nanowires. Whether the phosphorus-doped ZnO nanowires have the characteristics of a p-type semiconductor is indirectly verified by measuring whether the p-n junction made up of Al-doped ZnO thin film and phosphorus-doped ZnO nanowires shows rectifying behavior. I-V measurements are made on the specimens. The results show good rectifying behavior, proving that the phosphorus-doped ZnO nanowires and Al-doped AZO films have p-type and n-type semiconductor properties, constituting a good p-n junction. This result also proves that ammonium hypophosphite is a better source of phosphorus in the hydrothermal method to synthesize phosphorus-doped ZnO nanowires.

  1. Sputter deposition of Al-doped ZnO films with various incident angles

    SciTech Connect

    Sato, Yasushi; Yanagisawa, Kei; Oka, Nobuto; Nakamura, Shin-ichi; Shigesato, Yuzo

    2009-09-15

    Al-doped ZnO (AZO) films were sputter deposited on glass substrates heated at 200 degree sign C under incident angles of sputtered particles at 0 degree sign (incidence normal to substrate), 20 deg., 40 deg., 60 deg., and 80 deg. In the case of normal incidence, x-ray diffraction pole figures show a strong [001] preferred orientation normal to the film surface. In contrast, in the case wherein the incident angles were higher than 60 degree sign , the [001] orientation inclined by 25 deg. - 35 deg. toward the direction of sputtered particles. Transmission electron microscopy revealed that the tilt angle of the [001] orientation increased with increasing angle of the incident sputtered particles, whereas the columnar structure did not show any sign of inclination with respect to the substrate plane.

  2. Structural, electrical, and optical properties of atomic layer deposition Al-doped ZnO films

    SciTech Connect

    Banerjee, P; Lee, W. J.; Bae, K. R.; Lee, Sang Bok; Rubloff, Gary W

    2010-01-01

    Al-doped ZnO (AZO) films of ~100nm thickness with various Aldoping were prepared at 150°C by atomic layer deposition on quartz substrates. At low Aldoping, the films were strongly textured along the [100] direction, while at higher Aldoping the films remained amorphous. Atomic force microscopy results showed that Al–O cycles when inserted in a ZnOfilm, corresponding to a few atomic percent Al, could remarkably reduce the surface roughness of the films. Hall measurements revealed a maximum mobility of 17.7cm{sup 2} /Vs . Film resistivity reached a minima of 4.4×10{sup -3} Ωcm whereas the carrier concentration reached a maxima of 1.7×10{sup 20} cm{sup -3} , at 3 at.% Al. The band gap of AZO films varied from 3.23 eV for undoped ZnOfilms to 3.73 eV for AZO films with 24.6 at.% Al. Optical transmittance over 80% was obtained in the visible region. The detrimental impact of increased Al resulting in decreased conductivity due to doping past 3.0 at.% is evident in the x-ray diffraction data, as an abrupt increase in the optical band gap and as a deviation from the Burstein–Moss effect.

  3. Electrochemical Synthesis of Highly Oriented, Transparent, and Pinhole-Free ZnO and Al-Doped ZnO Films and Their Use in Heterojunction Solar Cells.

    PubMed

    Kang, Donghyeon; Lee, Dongho; Choi, Kyoung-Shin

    2016-10-04

    Electrochemical synthesis conditions using nonaqueous solutions were developed to prepare highly transparent (T > 90%) and crystalline ZnO and Al-doped ZnO (AZO) films for use in solar energy conversion devices. A focused effort was made to produce pinhole-free films in a reproducible manner by identifying a key condition to prevent the formation of cracks during deposition. The polycrystalline domains in the resulting films had a uniform orientation (i.e., the c-axis perpendicular to the substrate), which enhanced the electron transport properties of the films. Furthermore, electrochemical Al doping of ZnO using nonaqueous media, which was demonstrated for the first time in this study, effectively increased the carrier density and raised the Fermi level of ZnO. These films were coupled with an electrodeposited p-type Cu2O to construct p-n heterojunction solar cells to demonstrate the utilization of these films for solar energy conversion. The resulting n-ZnO/p-Cu2O and n-AZO/p-Cu2O cells showed excellent performance compared with previously reported n-ZnO/p-Cu2O cells prepared by electrodeposition. In particular, replacing ZnO with AZO resulted in simultaneous enhancements in short circuit current and open circuit potential, and the n-AZO/p-Cu2O cell achieved an average power conversion efficiency (η) of 0.92 ± 0.09%. The electrodeposition condition reported here will offer a practical and versatile way to produce ZnO or AZO films, which play key roles in various solar energy conversion devices, with qualities comparable to those prepared by vacuum-based techniques.

  4. Near infrared ray annealing effects on the properties of Al-doped ZnO thin films prepared by spin-coating method.

    PubMed

    Jun, Min-Chul; Park, Sang-Uk; Chae, Moon-Soon; Shin, Dong-Jin; Ha, Jae-Geun; Koo, Sang-Mo; Lee, Kyung-Ju; Moon, Byung-Moo; Song, Chi-Young; Koh, Jung-Hyuk

    2013-09-01

    In this research, we will present Al doped ZnO thin films for transparent conducting oxide applications. Aluminum doped zinc oxide (AZO) thin films have been deposited on the glass substrates by sol-gel spin-coating method using zinc acetate dehydrate (Zn(CH3COO)2 2H2O) and aluminum chloride hexahydrate (AlCl3 x 6H2O) as cation sources. In this study, we investigated the effects of near infrared ray (NIR) annealing on the structural, optical and electrical characteristics of the AZO thin films. The experimental results showed that AZO thin films have a hexagonal wurtzite crystal structure and had a good transmittance higher than 85% within the visible wavelength region. It was also found that the additional energy of NIR helps to improve the electrical properties of Al doped ZnO transparent conducting oxides.

  5. Transparent conducting Si-codoped Al-doped ZnO thin films prepared by magnetron sputtering using Al-doped ZnO powder targets containing SiC

    SciTech Connect

    Nomoto, Jun-ichi; Miyata, Toshihiro; Minami, Tadatsugu

    2009-07-15

    Transparent conducting Al-doped ZnO (AZO) thin films codoped with Si, or Si-codoped AZO (AZO:Si), were prepared by radio-frequency magnetron sputtering using a powder mixture of ZnO, Al{sub 2}O{sub 3}, and SiC as the target; the Si content (Si/[Si+Zn] atomic ratio) was varied from 0 to 1 at. %, but the Al content (Al/[Al+Zn] atomic ratio) was held constant. To investigate the effect of carbon on the electrical properties of AZO:Si thin films prepared using the powder targets containing SiC, the authors also prepared thin films using a mixture of ZnO, Al{sub 2}O{sub 3}, and SiO{sub 2} or SiO powders as the target. They found that when AZO:Si thin films were deposited on glass substrates at about 200 degree sign C, both Al and Si doped into ZnO acted as effective donors and the atomic carbon originating from the sputtered target acted as a reducing agent. As a result, sufficient improvement was obtained in the spatial distribution of resistivity on the substrate surface in AZO:Si thin films prepared with a Si content (Si/[Si+Zn] atomic ratio) of 0.75 at. % using powder targets containing SiC. The improvement in resistivity distribution was mainly attributed to increases in both carrier concentration and Hall mobility at locations on the substrate corresponding to the target erosion region. In addition, the resistivity stability of AZO: Si thin films exposed to air for 30 min at a high temperature was found to improve with increasing Si content.

  6. Fabrication and characterization of silicon wire solar cells having ZnO nanorod antireflection coating on Al-doped ZnO seed layer

    PubMed Central

    2012-01-01

    In this study, we have fabricated and characterized the silicon [Si] wire solar cells with conformal ZnO nanorod antireflection coating [ARC] grown on a Al-doped ZnO [AZO] seed layer. Vertically aligned Si wire arrays were fabricated by electrochemical etching and, the p-n junction was prepared by spin-on dopant diffusion method. Hydrothermal growth of the ZnO nanorods was followed by AZO film deposition on high aspect ratio Si microwire arrays by atomic layer deposition [ALD]. The introduction of an ALD-deposited AZO film on Si wire arrays not only helps to create the ZnO nanorod arrays, but also has a strong impact on the reduction of surface recombination. The reflectance spectra show that ZnO nanorods were used as an efficient ARC to enhance light absorption by multiple scattering. Also, from the current-voltage results, we found that the combination of the AZO film and ZnO nanorods on Si wire solar cells leads to an increased power conversion efficiency by more than 27% compared to the cells without it. PMID:22222067

  7. Fabrication and characterization of silicon wire solar cells having ZnO nanorod antireflection coating on Al-doped ZnO seed layer.

    PubMed

    Baek, Seong-Ho; Noh, Bum-Young; Park, Il-Kyu; Kim, Jae Hyun

    2012-01-05

    In this study, we have fabricated and characterized the silicon [Si] wire solar cells with conformal ZnO nanorod antireflection coating [ARC] grown on a Al-doped ZnO [AZO] seed layer. Vertically aligned Si wire arrays were fabricated by electrochemical etching and, the p-n junction was prepared by spin-on dopant diffusion method. Hydrothermal growth of the ZnO nanorods was followed by AZO film deposition on high aspect ratio Si microwire arrays by atomic layer deposition [ALD]. The introduction of an ALD-deposited AZO film on Si wire arrays not only helps to create the ZnO nanorod arrays, but also has a strong impact on the reduction of surface recombination. The reflectance spectra show that ZnO nanorods were used as an efficient ARC to enhance light absorption by multiple scattering. Also, from the current-voltage results, we found that the combination of the AZO film and ZnO nanorods on Si wire solar cells leads to an increased power conversion efficiency by more than 27% compared to the cells without it.

  8. Field-induced doping-mediated tunability in work function of Al-doped ZnO: Kelvin probe force microscopy and first-principle theory

    NASA Astrophysics Data System (ADS)

    Kumar, Mohit; Mookerjee, Sumit; Som, Tapobrata

    2016-09-01

    We demonstrate that the work function of Al-doped ZnO (AZO) can be tuned externally by applying an electric field. Our experimental investigations using Kelvin probe force microscopy show that by applying a positive or negative tip bias, the work function of AZO film can be enhanced or reduced, which corroborates well with the observed charge transport using conductive atomic force microscopy. These findings are further confirmed by calculations based on first-principles theory. Tuning the work function of AZO by applying an external electric field is not only important to control the charge transport across it, but also to design an Ohmic contact for advanced functional devices.

  9. Field-induced doping-mediated tunability in work function of Al-doped ZnO: Kelvin probe force microscopy and first-principle theory.

    PubMed

    Kumar, Mohit; Mookerjee, Sumit; Som, Tapobrata

    2016-09-16

    We demonstrate that the work function of Al-doped ZnO (AZO) can be tuned externally by applying an electric field. Our experimental investigations using Kelvin probe force microscopy show that by applying a positive or negative tip bias, the work function of AZO film can be enhanced or reduced, which corroborates well with the observed charge transport using conductive atomic force microscopy. These findings are further confirmed by calculations based on first-principles theory. Tuning the work function of AZO by applying an external electric field is not only important to control the charge transport across it, but also to design an Ohmic contact for advanced functional devices.

  10. Enhancement ZnO nanofiber as semiconductor for dye-sensitized solar cells by using Al doped

    NASA Astrophysics Data System (ADS)

    Sutanto, Bayu; Arifin, Zainal; Suyitno, Hadi, Syamsul; Pranoto, Lia Muliani; Agustia, Yuda Virgantara

    2016-03-01

    The purpose of this research is to produce Al-doped ZnO (AZO) nanofibers in order to enhance the performance of Dye-Sensitized Solar Cell (DSSC). AZO nanofiber semiconductor was manufactured by electrospinning process of Zinc Acetate Dehydrate (Zn(CH3COO)2) solution and precursor of Polyvinyl Acetate (PVA). The doping process of Al was built by dissolving 0-4 wt% in concentrations of AlCl3 to Zinc Acetate. AZO green fiber was sintered at temperature 500°C for an hour. The result shows that Al doped ZnO had capability to increase the electrical conductivity of semiconductor for doping 0, 1, 2, 3, and 4 wt% for 2,07×10-3; 3,71×10-3; 3,59 ×10-3; 3,10 ×10-3 and 2,74 ×10-3 S/m. The best performance of DSSC with 3 cm2 active area was obtained at 1 wt% Al-ZnO which the value of VOC, ISC, FF, and efficiency were 508,43 mV, 3,125 mA, 38,76%, and 0,411% respectively. These coincide with the electrical conductivity of semiconductor and the crystal size of XRD result that has the smallest size as compared to other doping variations.

  11. Structural, optical and electronic structure studies of Al doped ZnO thin films

    NASA Astrophysics Data System (ADS)

    Devi, Vanita; Kumar, Manish; Shukla, D. K.; Choudhary, R. J.; Phase, D. M.; Kumar, Ravindra; Joshi, B. C.

    2015-07-01

    Structural, optical and electronic structure of Al doped ZnO thin films grown using pulsed laser deposition on glass substrate are investigated. X-ray diffraction measurements reveal that all the films are textured along the c-axis and have wurtzite structure. Al doping in ZnO films leads to increase in grain size due to relaxation in compressive stress. Enhancement in band gap of ZnO films with the Al doping is also noticed which can be ascribed to the Brustein-Moss shift. The changes in the electronic structure caused by Al in the doped thin film samples are understood through X-ray absorption measurements.

  12. Investigation of the interrelation between the chemical state and the electric properties in Al-doped ZnO films

    NASA Astrophysics Data System (ADS)

    Wang, Jinzhao; Ni, Dongfang; Zhang, Tianjin; Wang, Duofa; Liang, Kun

    2015-09-01

    Transparent conducting Al-doped ZnO (AZO) thin films were prepared on glass substrates by radio frequency magnetron sputtering in pure Ar. The influence of the annealing atmosphere on the microstructure, chemical state, electric and optical properties of the AZO films was investigated with X-ray diffraction, field-emission scanning electron microscopy, X-ray photoelectron spectroscopy and Hall measurements. The AZO thin films annealed under vacuum had the highest carrier concentration of 2.488 × 1020 cm-3 and a Hall mobility of 16.35 cm2 V-1 s-1, while the AZO thin films annealed in air had the lowest carrier concentration of 4.182 × 1017 cm-3 and a Hall mobility of 2.375 cm2 V-1 s-1. The fitted narrow-scan O1 s spectra revealed that O1 s was composed of three components. The AZO thin films annealed under vacuum appeared to have a higher proportion of medium binding energy which correspond to O2- ions in the oxygen-deficient regions within the ZnO matrix, and have a lower proportion of high binding energy component which correspond to loosely bound chemisorbed oxygen. It believed that the oxygen vacancies and chemisorbed oxygen of the films played an important role in the electrical conductance. The carrier concentration increased with the formation of oxygen vacancies. The Hall mobility increased with desorption of the loosely bound oxygen.

  13. Al-doped ZnO contact to CdZnTe for x- and gamma-ray detector applications

    NASA Astrophysics Data System (ADS)

    Roy, U. N.; Camarda, G. S.; Cui, Y.; Gul, R.; Hossain, A.; Yang, G.; Mundle, R. M.; Pradhan, A. K.; James, R. B.

    2016-06-01

    The poor adhesion of common metals to CdZnTe (CZT)/CdTe surfaces has been a long-standing challenge for radiation detector applications. In this present work, we explored the use of an alternative electrode, viz., Al-doped ZnO (AZO) as a replacement to common metallic contacts. ZnO offers several advantages over the latter, such as having a higher hardness, a close match of the coefficients of thermal expansion for CZT and ZnO, and better adhesion to the surface of CZT due to the contact layer being an oxide. The AZO/CZT contact was investigated via high spatial-resolution X-ray response mapping for a planar detector at the micron level. The durability of the device was investigated by acquiring I-V measurements over an 18-month period, and good long-term stability was observed. We have demonstrated that the AZO/CZT/AZO virtual-Frisch-grid device performs fairly well, with comparable or better characteristics than that for the same detector fabricated with gold contacts.

  14. Effects of Al concentration on microstructural characteristics and electrical properties of Al-doped ZnO thin films on Si substrates by atomic layer deposition.

    PubMed

    Lee, Ju Ho; Lee, Jae-Won; Hwang, Sooyeon; Kim, Sang Yun; Cho, Hyung Koun; Lee, Jeong Yong; Park, Jin-Seong

    2012-07-01

    Al-doped ZnO (AZO) thin films with various Al concentrations were synthesized on Si(001) substrates with native oxide layers by atomic layer deposition process. The effects of the Al concentration on the microstructural characteristics of the AZO thin films grown at 250 degrees C and the correlation between their microstructural characteristics and electrical properties of the AZO thin films were investigated by AFM, XRD, HRTEM and Hall measurements. The XRD and HRTEM results revealed that the crystallinity and electrical properties of the undoped ZnO thin films were enhanced by 2.48 at% Al doping. However, 12.62 at% Al doping induced the deterioration of their crystallinity and electrical properties due to the formation of nano-sized metallic Al clusters and randomly oriented ZnO-based nano-crystals. To enhance the electrical properties of the AZO thin films while maintaining their crystallinity and electrical properties, a moderate Al concentration has to be chosen under the solubility limit of Al in ZnO.

  15. Highly transparent and conductive Al-doped ZnO nanoparticulate thin films using direct write processing.

    PubMed

    Vunnam, S; Ankireddy, K; Kellar, J; Cross, W

    2014-05-16

    Solution processable Al-doped ZnO (AZO) thin films are attractive candidates for low cost transparent electrodes. We demonstrate here an optimized nanoparticulate ink for the fabrication of AZO thin films using scalable, low-cost direct write processing (ultrasonic spray deposition) in air at atmospheric pressure. The thin films were made via thermal processing of as-deposited films. AZO films deposited using the proposed nanoparticulate ink with further reducing in vacuum and rf plasma of forming gas exhibited optical transparency greater than 95% across the visible spectrum, and electrical resistivity of 0.5 Ω cm and it drops down to 7.0 × 10(-2) Ω cm after illuminating with UV light, which is comparable to commercially available tin doped indium oxide colloidal coatings. Various structural analyses were performed to investigate the influence of ink chemistry, deposition parameters, and annealing temperatures on the structural, optical, and electrical characteristics of the spray deposited AZO thin films. Optical micrographs confirmed the presence of surface defects and cracks using the AZO NPs ink without any additives. After adding N-(2-Aminoethyl)-3-aminopropylmethyldimethoxy silane to the ink, AZO films exhibited an optical transparency which was virtually identical to that of the plain glass substrate.

  16. Effect of aging under ambient conditions on the optical properties of Al-doped ZnO thin films deposited by direct current sputtering

    NASA Astrophysics Data System (ADS)

    Barhoumi, A.; Leroy, G.; Duponchel, B.; Gest, J.; Guermazi, S.

    2017-01-01

    Transparent and conductive Al-doped ZnO (AZO) thin films were deposited on a glass substrate by direct current sputtering. In a previous study, we noted the influence of time on structural and electrical characteristics of films. In the present paper, the effect of a two-year aging under ambient conditions on the optical properties was investigated. A global improvement of the optical properties of AZO thin films was observed. The optical transmittance spectra revealed a high transmittance more than 90% in the Vis-NIR regions and a high absorption in the ultraviolet range. It is assumed that the crystallinity segregation leads to the decrease of optical scattering. The results from the optical measurements showed a reorganization of the structure leading to the degradation of the structural homogeneity. Nevertheless, the evolution of the figure of merit shows that Al-doped ZnO is a good candidate for the manufacturing and the commercialization of transparent conducting oxide devices.

  17. On the variations of optical property and electronic structure in heavily Al-doped ZnO films during double-step growth process

    SciTech Connect

    Hu, Q. C.; Ding, K. Zhang, J. Y.; Yan, F. P.; Pan, D. M.; Huang, F.; Chiou, J. W.

    2014-01-13

    We have investigated the variations of optical property and electronic structure in heavily Al-doped ZnO (AZO) films during the growth process, which were formed by first creating Zn vacancies in O{sub 2}-rich atmosphere and second filling the vacancies with Zn atoms in Zn-vapor atmosphere. After the first step, the high-resistance AZO films have the same optical bandgap with nominally undoped ZnO, indicating that negligible variations in the fundamental bandgap happened to the AZO films although Al atom was incorporated into the ZnO lattice. After the second step, once free electrons were brought into the lattice by Zn-filling, the optical transition energy blueshifts due to the band-filling effect. X-ray absorption fine structure measurements suggest that Zn-filling process decreased the unoccupied states of the conduction band, but not raised the conduction band minimum.

  18. High rate reactive magnetron sputter deposition of Al-doped ZnO with unipolar pulsing and impedance control system

    SciTech Connect

    Nishi, Yasutaka; Hirohata, Kento; Tsukamoto, Naoki; Sato, Yasushi; Oka, Nobuto; Shigesato, Yuzo

    2010-07-15

    Al-doped ZnO (AZO) films were deposited on quartz glass substrates, unheated and heated to 200 deg. C, using reactive sputtering with a special feedback system of discharge impedance combined with midfrequency pulsing. A planar Zn-Al alloy target was connected to the switching unit, which was operated in a unipolar pulse mode. The oxidation of the target surface was precisely controlled by a feedback system for the entire O{sub 2} flow ratio including ''the transition region''. The deposition rate was about 10-20 times higher than that for films deposited by conventional sputtering using an oxide target. A deposition rate of AZO films of 390 nm/min with a resistivity of 3.8x10{sup -4} {Omega} cm and a transmittance in the visible region of 85% was obtained when the films were deposited on glass substrates heated to 200 deg. C with a discharge power of 4 kW.

  19. Micro/Nano hierarchical peony-like Al doped ZnO superhydrophobic film: The guiding effect of (100) preferred seed layer

    PubMed Central

    Li, Yang; Wang, Jingfeng; Kong, Yi; Zhou, Jia; Wu, Jinzhu; Wang, Gang; Bi, Hai; Wu, Xiaohong; Qin, Wei; Li, Qingkun

    2016-01-01

    In this communication, we present a versatile and controllable strategy for formation of superhydrophobic micro/nano hierarchical Al doped ZnO (AZO) films with a water contact angle (CA) of 170 ± 4°. This strategy involves a two-step layer-by-layer process employing an atomic layer deposition (ALD) technique followed by a hydrothermal method, and the resulting novel AZO surface layer consists of (100) dominant nano-rice-like AZO seed layer (the water CA of 110 ± 4°) covered with micro-peony-like AZO top. The growth mechanisms and superhydrophobic properties of the hierarchical AZO layer are discussed. It is believed that the present route holds promise for future success in the design and development of practical superhydrophobic materials. PMID:26753877

  20. Investigation of the biaxial stress of Al-doped ZnO thin films on a flexible substrate with RF magnetron sputtering

    NASA Astrophysics Data System (ADS)

    Huang, Kuo-Ting; Chen, Hsi-Chao; Cheng, Po-Wei; Chang, Jhe-Ming

    2016-01-01

    Transparent conductive Al-doped ZnO (AZO) thin films were deposited onto poly(ethylene terephthalate) (PET) substrate, using the radio frequency (RF) magnetron sputtering method. The residual stress of flexible electronics was investigated by a double beam shadow moiré interferometer with phase shifting interferometry (PSI). Moreover, the biaxial stress of AZO thin films can be graphically represented by using Mohr’s circle of stress. The residual stress of AZO thin films becomes more compressive with the increase in sputtering power. The maximum residual stress is -1115.74 MPa, and the shearing stress is 490.57 MPa at a sputtering power of 200 W. The trends of residual stress were evidenced by the X-ray diffraction (XRD) patterns and optical properties of AZO thin films. According to the evaluation results of the refractive index and the extinction coefficient, the AZO thin films have better quality when the sputtering power less than 100 W.

  1. Micro/Nano hierarchical peony-like Al doped ZnO superhydrophobic film: The guiding effect of (100) preferred seed layer

    NASA Astrophysics Data System (ADS)

    Li, Yang; Wang, Jingfeng; Kong, Yi; Zhou, Jia; Wu, Jinzhu; Wang, Gang; Bi, Hai; Wu, Xiaohong; Qin, Wei; Li, Qingkun

    2016-01-01

    In this communication, we present a versatile and controllable strategy for formation of superhydrophobic micro/nano hierarchical Al doped ZnO (AZO) films with a water contact angle (CA) of 170 ± 4°. This strategy involves a two-step layer-by-layer process employing an atomic layer deposition (ALD) technique followed by a hydrothermal method, and the resulting novel AZO surface layer consists of (100) dominant nano-rice-like AZO seed layer (the water CA of 110 ± 4°) covered with micro-peony-like AZO top. The growth mechanisms and superhydrophobic properties of the hierarchical AZO layer are discussed. It is believed that the present route holds promise for future success in the design and development of practical superhydrophobic materials.

  2. Fabrication of deep-profile Al-doped ZnO one- and two-dimensional lattices as plasmonic elements

    NASA Astrophysics Data System (ADS)

    Jensen, Flemming; Shkondin, Evgeniy; Takayama, Osamu; Larsen, Pernille V.; Mar, Mikkel D.; Malureanu, Radu; Lavrinenko, Andrei V.

    2016-09-01

    In this work, we report on fabrication of deep-profile one- and two-dimensional lattices made from Al-doped ZnO (AZO). AZO is considered as an alternative plasmonic material having the real part of the permittivity negative in the near infrared range. The exact position of the plasma frequency of AZO is doping concentration dependent, allowing for tuning possibilities. In addition, the thickness of the AZO film also affects its material properties. Physical vapor deposition techniques typically applied for AZO coating do not enable deep profiling of a plasmonic structure. Using the atomic layer deposition technique, a highly conformal deposition method, allows us to fabricate high-aspect ratio structures such as one-dimensional lattices with a period of 400 nm and size of the lamina of 200 nm in width and 3 μm in depth. Thus, our structures have an aspect ratio of 1:15 and are homogeneous on areas of 2×2 cm2 and more. We also produce two-dimensional arrays of circular nanopillars with similar dimensions. Instead of nanopillars hollow tubes with a wall thickness on demand from 20 nm up to a complete fill can be fabricated.

  3. Evolution of dielectric function of Al-doped ZnO thin films with thermal annealing: effect of band gap expansion and free-electron absorption.

    PubMed

    Li, X D; Chen, T P; Liu, Y; Leong, K C

    2014-09-22

    Evolution of dielectric function of Al-doped ZnO (AZO) thin films with annealing temperature is observed. It is shown that the evolution is due to the changes in both the band gap and the free-electron absorption as a result of the change of free-electron concentration of the AZO thin films. The change of the electron concentration could be attributed to the activation of Al dopant and the creation/annihilation of the donor-like defects like oxygen vacancy in the thin films caused by annealing.

  4. Improved optical and electrical properties of rf sputtered Al doped ZnO films on polymer substrates by low-damage processes

    SciTech Connect

    Min, Hyung Seob; Yang, Min Kyu; Lee, Jeon-Kook

    2009-03-15

    Three types of low-damage radio-frequency (rf) magnetron sputtering processes--an interruptive process, a rotating cylindrical holder method, and an off-axis sputtering method--were designed and studied to reduce the film surface temperature during deposition. Low-damage sputtering processes were investigated to improve the resistivity and optical transmittance in the visible range of Al doped ZnO (AZO) thin films deposited on polymer substrates. In the case of the polyethersulfone substrate, AZO films with a resistivity of 1.0x10{sup -3} {omega} cm and an optical transmittance of 75% were obtained by the rotating repeat holder method during rf sputtering.

  5. Synthesis of flower-like Al doped ZnO microstructures by hydrothermal process and analysis of their gas sensing properties

    NASA Astrophysics Data System (ADS)

    Li, Zan; Qin, Wei; Zhao, Wenjie; Wu, Xiaohong

    2014-04-01

    Al-doped ZnO (AZO) powders with flower-like microstructures were successfully synthesized through a simple and efficient hydrothermal approach, and were characterized by X-ray diffraction (XRD), scanning electron microscopy (SEM), and energy diffraction spectrum (EDS). All the samples presented high crystallinity with a hexagonal wurtzite structure. The heater gas sensors based on AZO were fabricated and investigation of gas sensing properties was conducted. The sensors showed high response values and reproducible response-recovery for 50-1800 ppm ethanol at 332°C, comparing with NH3, SO2, CO, and HCHO. The underlying mechanism was discussed.

  6. Atomic layer deposition of Al-doped ZnO thin films

    SciTech Connect

    Tynell, Tommi; Yamauchi, Hisao; Karppinen, Maarit; Okazaki, Ryuji; Terasaki, Ichiro

    2013-01-15

    Atomic layer deposition has been used to fabricate thin films of aluminum-doped ZnO by depositing interspersed layers of ZnO and Al{sub 2}O{sub 3} on borosilicate glass substrates. The growth characteristics of the films have been investigated through x-ray diffraction, x-ray reflection, and x-ray fluorescence measurements, and the efficacy of the Al doping has been evaluated through optical reflectivity and Seebeck coefficient measurements. The Al doping is found to affect the carrier density of ZnO up to a nominal Al dopant content of 5 at. %. At nominal Al doping levels of 10 at. % and higher, the structure of the films is found to be strongly affected by the Al{sub 2}O{sub 3} phase and no further carrier doping of ZnO is observed.

  7. Effects of annealing pressure and Ar+ sputtering cleaning on Al-doped ZnO films

    NASA Astrophysics Data System (ADS)

    Wang, Jiwei; Mei, Yong; Lu, Xuemei; Fan, Xiaoxing; Kang, Dawei; Xu, Panfeng; Tan, Tianya

    2016-11-01

    Post-treatments of Al-doped ZnO films fabricated by sol-gel method were studied in condition of annealing in air, vacuum and protective ambient, as well as the follow-up Ar+ sputtering cleaning. The effect of annealing pressure on resistivity of AZO films was investigated from 105 to 10-4 Pa, where the resistivity decreased four orders of magnitude as the pressure decreased and approached to its minimum at 10 Pa. It was observed that the main decreasing of resistivity occurred in a very narrow range of middle vacuum (between 100 and 10 Pa) and high vacuum was dispensable. The XRD and XPS characterizations demonstrated that the radical increasing of oxygen vacancy, Zn interstitial and substitution of Al3+ for Zn2+ under middle vacuum were responsible for the significant enhancement of conductivity. The follow-up Ar+ sputtering cleaning can further decrease the resistivity through removing the chemisorbed oxygen on film surface and grain boundaries, meanwhile fulfil the surface texture process, and thus improve both electrical and optical performances for applications.

  8. Photoluminescence lifetime of Al-doped ZnO films in visible region

    NASA Astrophysics Data System (ADS)

    Sharma, Bhupendra K.; Khare, Neeraj; Haranath, D.

    2010-12-01

    ZnO and Al-doped ZnO films have been deposited on quartz substrates by ultrasonically assisted chemical vapor deposition technique. Photoluminescence (PL) spectra of the films reveal that Al doping leads to suppression of defect related visible band. Time resolved photoluminescence studies have been carried out for the measurement of lifetime of deep level luminescence. The decay of PL intensity with time has been found to follow biexponential behavior. The relative contributions of fast decay component (τ1) and slow decay component (τ2) in total decay process are found to be ˜99% and ˜1% respectively. The values of τ1 and τ2 are found to decrease with Al doping in ZnO film. The decrease of both τ1 and τ2 is attributed to increase in non-radiative recombination due to reduction in grain sizes and the decrease in radiative recombination due to suppression of defects.

  9. Spectroscopic characterization of the plasmas formed during the deposition of ZnO and Al-doped ZnO films by plasma-assisted pulsed laser deposition

    NASA Astrophysics Data System (ADS)

    Liang, Peipei; Cai, Hua; Yang, Xu; Li, Hui; Zhang, Wu; Xu, Ning; Sun, Jian; Wu, Jiada

    2016-11-01

    An oxygen-zinc plasma and an oxygen-zinc-aluminum plasma are formed by pulsed laser ablation of a Zn target or pulsed laser co-ablation of a Zn target and an Al target in an electron cyclotron resonance (ECR) discharge-generated oxygen plasma for the deposition of ZnO and Al-doped ZnO (AZO) films. The plasmas are characterized spectroscopically by time-integrated and time-resolved optical emission spectroscopy. Both the oxygen-zinc plasma and the oxygen-zinc-aluminum plasma contain excited species originally present in the working O2 gas and energetic species ablated from the targets. The optical emission of the oxygen-zinc-aluminum plasma is abundant in the emission bands of oxygen molecular ions and the emission lines of mono-atomic oxygen, zinc and aluminum atoms and atomic ions. The time-integrated spectra as well as the time-resolved spectra of the plasma emission indicate that the oxygen species in the ECR oxygen plasma experience additional excitation by the expanding ablation plumes, and the ablated species are excited frequently when traveling accompanying the plume expansion in the oxygen plasma, making the formed plasma highly excited and very reactive, which plays an important role in the reactive growth of ZnO matrix and the in-situ doping of Al into the growing ZnO matrix. The deposited ZnO and AZO films were evaluated for composition analysis by energy dispersive X-ray spectroscopy, structure characterization by X-ray diffraction and optical transmission measurement. The deposited ZnO is slightly rich in O. The Al concentration of the AZO films can be controlled and varied simply by changing the repetition rate of the laser used for Al target ablation. Both the ZnO and the AZO films are featured with hexagonal wurtzite crystal structure and exhibit high optical transparency in a wide spectral region. Al doping results in an improvement in the ultraviolet transparency, a blue shift in the absorption edge and a widening of the band gap.

  10. Mechanisms of lighting enhancement of Al nanoclusters-embedded Al-doped ZnO film in GaN-based light-emitting diodes

    SciTech Connect

    Lee, Hsin-Ying; Chou, Ying-Hung; Lee, Ching-Ting

    2010-01-15

    Aluminum (Al)-doped ZnO (AZO) films with embedded Al nanoclusters were proposed and utilized to enhance the light output power and maximum operation current of GaN-based light-emitting diodes (LEDs). The AZO films were sputtered using ZnO and Al targets in a magnetron cosputtering system. With Al dc power of 7 W and ZnO 100 W ac power, the electron concentration of 4.1x10{sup 20} cm{sup -3}, electron mobility of 16.2 cm{sup 2}/V s, and resistivity of 7.2x10{sup -4} {Omega} cm were obtained for the deposited AZO film annealed at 600 deg. C for 1 min in a N{sub 2} ambient. As verified by a high resolution transmission electron microscopy, the deposited AZO films with embedded Al nanoclusters were clearly observed. A 35% increase in light output power of the GaN-based LEDs with Al nanoclusters-embedded AZO films was realized compared with the conventional LEDs operated at 500 mA. It was verified experimentally that the various characteristics of GaN-based LEDs including the antireflection, light scattering, current spreading, and the light extraction efficiency in light emission could be significantly enhanced with the use of Al nanoclusters-embedded AZO films.

  11. Plasma versus thermal annealing for the Au-catalyst growth of ZnO nanocones and nanowires on Al-doped ZnO buffer layers

    NASA Astrophysics Data System (ADS)

    Güell, Frank; Martínez-Alanis, Paulina R.; Roso, Sergio; Salas-Pérez, Carlos I.; García-Sánchez, Mario F.; Santana, Guillermo; Marel Monroy, B.

    2016-06-01

    We successfully synthesized ZnO nanocones and nanowires over polycrystalline Al-doped ZnO (AZO) buffer layers on fused silica substrates by a vapor-transport process using Au-catalyst thin films. Different Au film thicknesses were thermal or plasma annealed in order to analyze their influence on the ZnO nanostructure growth morphology. Striking differences have been observed. Thermal annealing generates a distribution of Au nanoclusters and plasma annealing induces a fragmentation of the Au thin films. While ZnO nanowires are found in the thermal-annealed samples, ZnO nanocones and nanowires have been obtained on the plasma-annealed samples. Enhancement of the preferred c-axis (0001) growth orientation was demonstrated by x-ray diffraction when the ZnO nanocones and nanowires have been grown over the AZO buffer layer. The transmittance spectra of the ZnO nanocones and nanowires show a gradual increase from 375 to 900 nm, and photoluminescence characterization pointed out high concentration of defects leading to observation of a broad emission band in the visible range from 420 to 800 nm. The maximum emission intensity peak position of the broad visible band is related to the thickness of the Au-catalyst for the thermal-annealed samples and to the plasma power for the plasma-annealed samples. Finally, we proposed a model for the plasma versus thermal annealing of the Au-catalyst for the growth of the ZnO nanocones and nanowires. These results are promising for renewable energy applications, in particular for its potential application in solar cells.

  12. Local probe microscopic studies on Al-doped ZnO: Pseudoferroelectricity and band bending at grain boundaries

    SciTech Connect

    Kumar, Mohit; Basu, Tanmoy; Som, Tapobrata

    2016-01-07

    In this paper, based on piezoforce measurements, we show the presence of opposite polarization at grains and grain boundaries of Al-doped ZnO (AZO). The polarization can be flipped by 180° in phase by switching the polarity of the applied electric field, revealing the existence of nanoscale pseudoferroelectricity in AZO grown on Pt/TiO{sub 2}/SiO{sub 2}/Si substrate. We also demonstrate an experimental evidence on local band bending at grain boundaries of AZO films using conductive atomic force microscopy and Kelvin probe force microscopy. The presence of an opposite polarization at grains and grain boundaries gives rise to a polarization-driven barrier formation at grain boundaries. With the help of conductive atomic force microscopy, we show that the polarization-driven barrier along with the defect-induced electrostatic potential barrier account for the measured local band bending at grain boundaries. The present study opens a new avenue to understand the charge transport in light of both polarization and electrostatic effects.

  13. Local probe microscopic studies on Al-doped ZnO: Pseudoferroelectricity and band bending at grain boundaries

    NASA Astrophysics Data System (ADS)

    Kumar, Mohit; Basu, Tanmoy; Som, Tapobrata

    2016-01-01

    In this paper, based on piezoforce measurements, we show the presence of opposite polarization at grains and grain boundaries of Al-doped ZnO (AZO). The polarization can be flipped by 180° in phase by switching the polarity of the applied electric field, revealing the existence of nanoscale pseudoferroelectricity in AZO grown on Pt/TiO2/SiO2/Si substrate. We also demonstrate an experimental evidence on local band bending at grain boundaries of AZO films using conductive atomic force microscopy and Kelvin probe force microscopy. The presence of an opposite polarization at grains and grain boundaries gives rise to a polarization-driven barrier formation at grain boundaries. With the help of conductive atomic force microscopy, we show that the polarization-driven barrier along with the defect-induced electrostatic potential barrier account for the measured local band bending at grain boundaries. The present study opens a new avenue to understand the charge transport in light of both polarization and electrostatic effects.

  14. Electronic structure of Al-doped ZnO transparent conductive thin films studied by x-ray absorption and emission spectroscopies

    SciTech Connect

    Huang, W. H.; Sun, S. J.; Chiou, J. W.; Chou, H.; Chan, T. S.; Lin, H.-J.; Kumar, Krishna; Guo, J.-H.

    2011-11-15

    This study used O K-, Zn L{sub 3}-, Zn K-, and Al K-edges x-ray absorption near-edge structure (XANES) and O K-edge x-ray emission spectroscopy (XES) measurements to investigate the electronic structure of transparent Al-doped ZnO (AZO) thin film conductors. The samples were prepared on glass substrates at a low temperature near 77 K by using a standard RF sputtering method. High-purity Ne (5N) was used as the sputtering gas. The crystallography of AZO thin films gradually transformed from the ZnO wurtize structure to an amorphous structure during sample deposition, which suggests the suitability to grow on flexible substrates, eliminating the severe degradation due to fragmentation by repeated bending. The O K- and Zn L{sub 3}-edges XANES spectra of AZO thin films revealed a decrease in the number of both O 2p and Zn 3d unoccupied states when the pressure of Ne was increased from 5 to 100 mTorr. In contrast, Al K-edges XANES spectra showed that the number of unoccupied states of Al 3p increased in conjunction with the pressure of Ne, indicating an electron transfer from Al to O atoms, and suggesting that Al doping increases the negative effective charge of oxygen ions. XES and XANES spectra of O 2p states at the O K-edge also revealed that Al doping not only raised the conduction-band-minimum, but also increased the valence-band-maximum and the band-gap. The results indicate that the reduction in conductivity of AZO thin films is due to the generation of ionic characters, the increase in band-gap, and the decrease in density of unoccupied states of oxygen.

  15. Bi-layer channel structure-based oxide thin-film transistors consisting of ZnO and Al-doped ZnO with different Al compositions and stacking sequences

    NASA Astrophysics Data System (ADS)

    Cho, Sung Woon; Yun, Myeong Gu; Ahn, Cheol Hyoun; Kim, So Hee; Cho, Hyung Koun

    2015-03-01

    Zinc oxide (ZnO)-based bi-layers, consisting of ZnO and Al-doped ZnO (AZO) layers grown by atomic layer deposition, were utilized as the channels of oxide thin-film transistors (TFTs). Thin AZO layers (5 nm) with different Al compositions (5 and 14 at. %) were deposited on top of and beneath the ZnO layers in a bi-layer channel structure. All of the bi-layer channel TFTs that included the AZO layers showed enhanced stability (Δ V Th ≤ 3.2 V) under a positive bias stress compared to the ZnO single-layer channel TFT (Δ V Th = 4.0 V). However, the AZO/ZnO bi-layer channel TFTs with an AZO interlayer between the gate dielectric and the ZnO showed a degraded field effect mobility (0.3 cm2/V·s for 5 at. % and 1.8 cm2/V·s for 14 at. %) compared to the ZnO single-layer channel TFT (5.5 cm2/V·s) due to increased scattering caused by Al-related impurities near the gate dielectric/channel interface. In contrast, the ZnO/AZO bi-layer channel TFTs with an AZO layer on top of the ZnO layer exhibited an improved field effect mobility (7.8 cm2/V·s for 14 at. %) and better stability. [Figure not available: see fulltext.

  16. Correlations between 1/f noise and thermal treatment of Al-doped ZnO thin films deposited by direct current sputtering

    SciTech Connect

    Barhoumi, A. Guermazi, S.; Leroy, G.; Gest, J.; Carru, J. C.; Yang, L.; Boughzala, H.; Duponchel, B.

    2014-05-28

    Al-doped ZnO thin films (AZO) have been deposited on amorphous glass substrates by DC sputtering at different substrate temperatures T{sub s}. X-Ray diffraction results reveal that AZO thin films have a hexagonal wurtzite structure with (002) preferred orientation. (002) peaks indicate that the crystalline structure of the films is oriented with c-axis perpendicular to the substrate. Three-dimensional (3D) atomic force microscopy images of AZO thin films deposited on glass substrate at 200 °C, 300 °C, and 400 °C, respectively, shows the improvement of the crystallinity and the homogeneity of AZO thin films with T{sub s} which is in agreement with the noise measurements. The noise was characterized between 1 Hz and 100 kHz and we have obtained 1/f spectra. The noise is very sensitive to the crystal structure especially to the orientation of the crystallites which is perpendicular to the substrate and to the grain boundaries which generate a high current flow and a sharp increase in noise. Through time, R{sub sh} and [αμ]{sub eff} increase with the modification of the crystallinity of AZO thin films. Study of noise aging shows that the noise is more sensitive than resistivity for all AZO thin films.

  17. Thermoelectric properties of Al-doped ZnO: experiment and simulation

    NASA Astrophysics Data System (ADS)

    Jantrasee, S.; Moontragoon, P.; Pinitsoontorn, S.

    2016-09-01

    Advancement in doping other elements, such as Ce, Dy, Ni, Sb, In and Ga in ZnO[1], have stimulated great interest for high-temperature thermoelectric application. In this work, the effects of Al-doping in a ZnO system on the electronic structure and thermoelectric properties are presented, by experiment and calculation. Nanosized powders of Zn1-x Al x O (x = 0,0.01, 0.02, 0.03 and 0.06) were synthesized by hydrothermal method. From XRD results, all samples contain ZnO as the main phase and ZnAl2O4 (spinel phase) peaks were visible when Al additive concentrations were just 6 at%. The shape of the samples changed and the particle size decreased with increasing Al concentration. Seebeck coefficients, on the other hand, did not vary significantly. They were negative and the absolute values increased with temperature. However, the electrical resistivity decreased significantly for higher Al content. The electronic structure calculations were carried out using the open-source software package ABINIT[2], which is based on DFT. The energy band gap, density of states of Al-doped ZnO were investigated using PAW pseudopotential method within the LDA + U. The calculated density of states was then used in combination with the Boltzmann transport equation[3] to calculate the thermoelectric parameters of Al-doped ZnO. The electronic band structures showed that the position of the Fermi level of the doped sample was shifted upwards in comparison to the undoped one. After doping Al in ZnO, the energy band gap was decreased, Seebeck coefficient and electrical conductivity were increased. Finally, the calculated results were compared with the experimental results. The good agreement of thermoelectric properties between the calculation and the experimental results were obtained.

  18. Enhanced Performance in Al-Doped ZnO Based Transparent Flexible Transparent Thin-Film Transistors Due to Oxygen Vacancy in ZnO Film with Zn-Al-O Interfaces Fabricated by Atomic Layer Deposition.

    PubMed

    Li, Yang; Yao, Rui; Wang, Huanhuan; Wu, Xiaoming; Wu, Jinzhu; Wu, Xiaohong; Qin, Wei

    2017-04-05

    Highly conductive and optical transparent Al-doped ZnO (AZO) thin film composed of ZnO with a Zn-Al-O interface was fabricated by thermal atomic layer deposition (ALD) method. The as-prepared AZO thin film exhibits excellent electrical and optical properties with high stability and compatibility with temperature-sensitive flexible photoelectronic devices; film resistivity is as low as 5.7 × 10(-4) Ω·cm, the carrier concentration is high up to 2.2 × 10(21) cm(-3). optical transparency is greater than 80% in a visible range, and the growth temperature is below 150 °C on the PEN substrate. Compared with the conventional AZO film containing by a ZnO-Al2O3 interface, we propose that the underlying mechanism of the enhanced electrical conductivity for the current AZO thin film is attributed to the oxygen vacancies deficiency derived from the free competitive growth mode of Zn-O and Al-O bonds in the Zn-Al-O interface. The flexible transparent transistor based on this AZO electrode exhibits a favorable threshold voltage and Ion/Ioff ratio, showing promising for use in high-resolution, fully transparent, and flexible display applications.

  19. Spatial distribution of electrical properties for Al-doped ZnO films deposited by dc magnetron sputtering using various inert gases

    SciTech Connect

    Sato, Yasushi; Ishihara, Keita; Oka, Nobuto; Shigesato, Yuzo

    2010-07-15

    Spatial distribution of electrical properties of Al-doped ZnO (AZO) films deposited by magnetron sputtering was investigated. To adjust the intensity of bombardment by high-energy particles, the AZO films were deposited using Ar, Kr, or Xe gas with varying plasma impedance. The spatial distribution of the electrical properties clearly depends on the sputtering gas. In the case of using Kr or Xe, the resistivity of the films in front of the target center and erosion areas was significantly enhanced, in contrast with Ar. This was attributed to an enhancement in bombardment damage due to the increased sputtering voltages required for Kr or Xe discharges. The increase in plasma impedance was due to the smaller coefficients for secondary-electron emission of the target surface by Kr or Xe impingements, which leads to the larger sputtering voltage.

  20. Polymer solar cells with efficiency >10% enabled via a facile solution-processed Al-doped ZnO electron transporting layer (Presentation Recording)

    NASA Astrophysics Data System (ADS)

    Jagadamma, Lethy K.; Al-Senani, Mohammed; Amassian, Aram

    2015-10-01

    The present work details a facile and low-temperature (125C) solution-processed Al-doped ZnO (AZO) buffer layer functioning very effectively as electron accepting/hole blocking layer for a wide range of polymer:fullerene bulk heterojunction systems, and yielding power conversion efficiency in excess of 10% (8%) on glass (plastic) substrates. We show that ammonia addition to the aqueous AZO nanoparticle solution is a critically important step toward producing compact and smooth thin films which partially retain the aluminum doping and crystalline order of the starting AZO nanocrystals. The ammonia treatment appears to reduce the native defects via nitrogen incorporation, making the AZO film a very good electron transporter and energetically matched with the fullerene acceptor. Importantly, highly efficient solar cells are achieved without the need for additional surface chemical passivation or modification, which has become an increasingly common route to improving the performance of evaporated or solution-processed ZnO ETLs in solar cells.

  1. High-Hall-Mobility Al-Doped ZnO Films Having Textured Polycrystalline Structure with a Well-Defined (0001) Orientation.

    PubMed

    Nomoto, Junichi; Makino, Hisao; Yamamoto, Tetsuya

    2016-12-01

    Five hundred-nanometer-thick ZnO-based textured polycrystalline films consisting of 490-nm-thick Al-doped ZnO (AZO) films deposited on 10-nm-thick Ga-doped ZnO (GZO) films exhibited a high Hall mobility (μ H) of 50.1 cm(2)/Vs with a carrier concentration (N) of 2.55 × 10(20) cm(-3). Firstly, the GZO films were prepared on glass substrates by ion plating with dc arc discharge, and the AZO films were then deposited on the GZO films by direct current magnetron sputtering (DC-MS). The GZO interface layers with a preferential c-axis orientation play a critical role in producing AZO films with texture development of a well-defined (0001) orientation, whereas 500-nm-thick AZO films deposited by only DC-MS showed a mixture of the c-plane and the other plane orientation, to exhibit a μ H of 38.7 cm(2)/Vs with an N of 2.22 × 10(20) cm(-3).

  2. Biaxial stress and optoelectronic properties of Al-doped ZnO thin films deposited on flexible substrates by radio frequency magnetron sputtering.

    PubMed

    Chen, Hsi-Chao; Cheng, Po-Wei; Huang, Kuo-Ting

    2017-02-01

    Transparent conductive Al-doped ZnO (AZO) thin films were deposited on polyethylene terephthalate (PET) and polycarbonate (PC) substrates using radio frequency (RF) magnetron sputtering. The biaxial stress was measured with a double beam shadow moiré interferometer, and x-ray diffraction (XRD) was used to investigate the crystal orientation of ZnO. The substrate temperature was varied from room temperature to 150°C in steps of 25°C. The experimental results showed that the residual and shearing stresses increased with the increase in substrate temperature. The residual stress can be separated into principle and shearing stresses by Mohr's circle rule, and the shearing stress (tensile stress) was different from the compressive stress of the residual stress. However, the optimal substrate temperatures for PET and PC were 75°C and 100°C, and the shearing stresses were 424.82 and 543.68 MPa, respectively. AZO/PET and AZO/PC thin films cracked at substrate temperatures of 75°C and 100°C, respectively. AZO/PET thin film at a substrate temperature of 100°C had a resistivity low to the order of 10-3  Ω-cm.

  3. High-Hall-Mobility Al-Doped ZnO Films Having Textured Polycrystalline Structure with a Well-Defined (0001) Orientation

    NASA Astrophysics Data System (ADS)

    Nomoto, Junichi; Makino, Hisao; Yamamoto, Tetsuya

    2016-06-01

    Five hundred-nanometer-thick ZnO-based textured polycrystalline films consisting of 490-nm-thick Al-doped ZnO (AZO) films deposited on 10-nm-thick Ga-doped ZnO (GZO) films exhibited a high Hall mobility ( μ H) of 50.1 cm2/Vs with a carrier concentration ( N) of 2.55 × 1020 cm-3. Firstly, the GZO films were prepared on glass substrates by ion plating with dc arc discharge, and the AZO films were then deposited on the GZO films by direct current magnetron sputtering (DC-MS). The GZO interface layers with a preferential c-axis orientation play a critical role in producing AZO films with texture development of a well-defined (0001) orientation, whereas 500-nm-thick AZO films deposited by only DC-MS showed a mixture of the c-plane and the other plane orientation, to exhibit a μ H of 38.7 cm2/Vs with an N of 2.22 × 1020 cm-3.

  4. In situ spectroscopic ellipsometry growth studies on the Al-doped ZnO films deposited by remote plasma-enhanced metalorganic chemical vapor deposition

    SciTech Connect

    Volintiru, I.; Creatore, M.; Sanden, M. C. M. van de

    2008-02-01

    In situ spectroscopic ellipsometry (SE) was applied to study the pyramidlike and pillarlike growth of Al doped ZnO (AZO) films deposited by means of remote plasma-enhanced metalorganic chemical vapor deposition for transparent conductive oxide applications. Real time SE studies in the visible region allowed discerning between the two growth modes by addressing the time evolution of the bulk and surface roughness layer thickness. While the pillarlike mode is characterized by a constant growth rate, a slower rate in the initial stage (up to 150-200 nm film thickness), compared to the bulk, is observed for the growth of pyramidlike AZO films. The two modes differ also in terms of surface roughness development: a saturation behavior is observed for film thickness above 150-200 nm in the case of the pyramidlike films, while a slow linear increase with film thickness characterizes the pillarlike mode. By extending the SE analysis of the AZO films to the near infrared region, valuable information about the in grain properties could be extracted: excellent in grain mobility values, i.e., larger than 100 and 50 cm{sup 2}/V s, are determined for the pyramidlike and pillarlike AZO layers, respectively. The comparison between the outcome of the in situ real time SE studies and the ex situ electrical and chemical characterization highlights the limitations in the electron transport occurring in both types of films and allows one to address routes toward further improvement in AZO conductivity.

  5. Nonequilibrium-Plasma-Synthesized ZnO Nanocrystals with Plasmon Resonance Tunable via Al Doping and Quantum Confinement.

    PubMed

    Greenberg, Benjamin L; Ganguly, Shreyashi; Held, Jacob T; Kramer, Nicolaas J; Mkhoyan, K Andre; Aydil, Eray S; Kortshagen, Uwe R

    2015-12-09

    Metal oxide semiconductor nanocrystals (NCs) exhibit localized surface plasmon resonances (LSPRs) tunable within the infrared (IR) region of the electromagnetic spectrum by vacancy or impurity doping. Although a variety of these NCs have been produced using colloidal synthesis methods, incorporation and activation of dopants in the liquid phase has often been challenging. Herein, using Al-doped ZnO (AZO) NCs as an example, we demonstrate the potential of nonthermal plasma synthesis as an alternative strategy for the production of doped metal oxide NCs. Exploiting unique, thoroughly nonequilibrium synthesis conditions, we obtain NCs in which dopants are not segregated to the NC surfaces and local doping levels are high near the NC centers. Thus, we achieve overall doping levels as high as 2 × 10(20) cm(-3) in NCs with diameters ranging from 12.6 to 3.6 nm, and for the first time experimentally demonstrate a clear quantum confinement blue shift of the LSPR energy in vacancy- and impurity-doped semiconductor NCs. We propose that doping of central cores and heavy doping of small NCs are achievable via nonthermal plasma synthesis, because chemical potential differences between dopant and host atoms-which hinder dopant incorporation in colloidal synthesis-are irrelevant when NC nucleation and growth proceed via irreversible interactions among highly reactive gas-phase ions and radicals and ligand-free NC surfaces. We explore how the distinctive nucleation and growth kinetics occurring in the plasma influences dopant distribution and activation, defect structure, and impurity phase formation.

  6. Thickness Effect of Al-Doped ZnO Window Layer on Damp Heat Stability of CuInGaSe2 Solar Cells: Preprint

    SciTech Connect

    Pern, F. J.; Mansfield, L.; DeHart, C.; Glick, S. H.; Yan, F.; Noufi, R.

    2011-07-01

    We investigated the damp heat (DH) stability of CuInGaSe2 (CIGS) solar cells as a function of thickness of the Al-doped ZnO (AZO) window layer from the 'standard' 0.12 μm to a modest 0.50 μm over an underlying 0.10-μm intrinsic ZnO buffer layer. The CIGS cells were prepared with external electrical contact using fine Au wire to the tiny 'standard' Ni/Al (0.05 μm/3 μm) metal grid contact pads. Bare cell coupons and sample sets encapsulated in a specially designed, Al-frame test structure with an opening for moisture ingress control using a TPT backsheet were exposed to DH at 85oC and 85% relative humidity, and characterized by current-voltage (I-V), quantum efficiency (QE), and (electrochemical) impedance spectroscopy (ECIS). The results show that bare cells exhibited rapid degradation within 50-100 h, accompanied by film wrinkling and delamination and corrosion of Mo and AlNi grid, regardless of AZO thickness. In contrast, the encapsulated cells did not show film wrinkling, delamination, and Mo corrosion after 168 h DH exposure; but the trend of efficiency degradation rate showed a weak correlation to the AZO thickness.

  7. CROSS-DISCIPLINARY PHYSICS AND RELATED AREAS OF SCIENCE AND TECHNOLOGY: Effect of Annealing Conditions on Properties of Sol-Gel Derived Al-Doped ZnO Thin Films

    NASA Astrophysics Data System (ADS)

    Gao, Mei-Zhen; Zhang, Feng; Liu, Jing; Sun, Hui-Na

    2009-08-01

    Transparent conductive Al-doped ZnO (AZO) thin films are prepared on normal glass substrates by the sol-gel spin coating method. The effects of drying conditions, annealing temperature and cooling rate on the structural, electrical and optical properties of AZO films are investigated by x-ray diffraction, scanning electron microscopy, the four-point probe method and UV-VIS spectrophotometry, respectively. The deposited films show a hexagonal wurtzite structure and high preferential c-axis orientation. As the drying temperature increases from 100°C to 300°C the resistivity of AZO films decreases dramatically. In contrast to the annealed films cooled in a furnace and in air, the resistivity of the annealed film which is cooled at -15°C is greatly reduced. Increasing the cooling rate dramatically increases the electrical conductivity of AZO films.

  8. Structural and optical properties of pure and Al doped ZnO nanocrystals

    NASA Astrophysics Data System (ADS)

    Ghosh, A.; Kumari, N.; Tewari, S.; Bhattacharjee, A.

    2013-11-01

    Pure and Al doped zinc oxide (ZnO) were prepared by co-precipitation method. The dopant concentration [Al/Zn in atomic percentage (wt%)] was varied from 0 to 3 wt%. Structural characterisation of the samples performed with XRD and SEM-EDAX confirmed that polycrystalline nature of samples containing ZnO nanoparticles of size in the range of 97-47 nm. UV-Vis studies showed that the absorbance peaks, observed in the wavelength range of 800-250 nm, decreased with the increase in dopant concentration indicating widening of the band gap. The calculations of band gap (analyzed in terms of Burstein-Moss shift) from the reflectance showed an increase from 3.37 to 3.49 eV with increasing Al concentration.

  9. Electrical stability of Al-doped ZnO transparent electrode prepared by sol-gel method

    NASA Astrophysics Data System (ADS)

    Tabassum, Samia; Yamasue, Eiji; Okumura, Hideyuki; Ishihara, Keiichi N.

    2016-07-01

    Al-doped zinc oxide (AZO) thin films have been considered as a promising alternative to tin doped indium oxide (ITO), which is currently used in various optoelectronic applications. However, the environmental stability of AZO film is not satisfactory, in that the resistivity is significantly increases in air. Here, we investigate the resistivity stability of AZO thin films prepared by sol-gel method using various annealing temperatures and durations. The degradation of resistivity property was observed for AZO films stored in ambient or damp heat environment, where the degradation rate was influenced by annealing temperature. A significant improvement of electrical stability was attained in AZO films that were prepared at high annealing temperature. The films, which showed the highest and the lowest increasing rate of resistivity, were further characterized in detail to shed light on the possible mechanisms explaining the improved stability through crystallinity, surface morphology and elemental state of the thin film.

  10. Development of Solution-Processed ZnO Nanorod Arrays Based Photodetectors and the Improvement of UV Photoresponse via AZO Seed Layers.

    PubMed

    Zhang, Yuzhu; Xu, Jianping; Shi, Shaobo; Gao, Yanyan; Wang, Chang; Zhang, Xiaosong; Yin, Shougen; Li, Lan

    2016-08-31

    Designing a rational structure and developing an efficient fabrication technique for bottom-up devices offer a promising opportunity for achieving high-performance devices. In this work, we studied how Al-doped ZnO (AZO) seed layer films influence the morphology and optical and electrical properties for ZnO aligned nanorod arrays (NRs) and then the performance of ZnO NRs based ultraviolet photodetectors (UV PDs) with Au/ZnO NRs Schottky junctions and p-CuSCN/n-ZnO NRs heterojunctions. The PD with AZO thin film with 0.5 at. % Al doping (named as AZO (0.5%)) exhibited more excellent photoresponse properties than that with pristine ZnO and AZO (1%) thin films. This phenomenon can be ascribed to the good light transmission of the AZO layer, increased density of the NRs, and improved crystallinity of ZnO NRs. The PDs based on CuSCN/ZnO NRs heterojunctions showed good rectification characteristics in the dark and self-powered UV photoresponse properties with excellent stability and reproducibility under low-intensity illumination conditions. A large responsivity located at 365 nm of 22.5 mA/W was achieved for the PD with AZO (0.5%) thin film without applied bias. The internal electric field originated from p-CuSCN/n-ZnO NRs heterojunctions can separate photogenerated carriers in ZnO NRs and drift toward the corresponding electrode.

  11. Transparent conductive Al-doped ZnO thin films grown at room temperature

    SciTech Connect

    Wang Yuping; Lu Jianguo; Bie Xun; Gong Li; Li Xiang; Song Da; Zhao Xuyang; Ye Wenyi; Ye Zhizhen

    2011-05-15

    Aluminum-doped ZnO (ZnO:Al, AZO) thin films were prepared on glass substrates by dc reactive magnetron sputtering from a Zn-Al alloy target at room temperature. The effects of the Ar-to-O{sub 2} partial pressure ratios on the structural, electrical, and optical properties of AZO films were studied in detail. AZO films grown using 100:4 to 100:8 Ar-to-O{sub 2} ratio result in acceptable quality films with c-axis orientated crystals, uniform grains, 10{sup -3} {Omega} cm resistivity, greater than 10{sup 20} cm{sup -3} electron concentration, and high transmittance, 90%, in the visible region. The lowest resistivity of 4.11x10{sup -3} {Omega} cm was obtained under the Ar-to-O{sub 2} partial pressure ratio of 100:4. A relatively strong UV emission at {approx}3.26 eV was observed in the room-temperature photoluminescence spectrum. X-ray photoelectron spectroscopy analysis confirmed that Al was introduced into ZnO and substitutes for Zn and doped the film n-type.

  12. Transparent conducting Al-doped ZnO thin films prepared by magnetron sputtering with dc and rf powers applied in combination

    SciTech Connect

    Minami, Tadatsugu; Ohtani, Yuusuke; Miyata, Toshihiro; Kuboi, Takeshi

    2007-07-15

    A newly developed Al-doped ZnO (AZO) thin-film magnetron-sputtering deposition technique that decreases resistivity, improves resistivity distribution, and produces high-rate depositions has been demonstrated by dc magnetron-sputtering depositions that incorporate rf power (dc+rf-MS), either with or without the introduction of H{sub 2} gas into the deposition chamber. The dc+rf-MS preparations were carried out in a pure Ar or an Ar+H{sub 2} (0%-2%) gas atmosphere at a pressure of 0.4 Pa by adding a rf component (13.56 MHz) to a constant dc power of 80 W. The deposition rate in a dc+rf-MS deposition incorporating a rf power of 150 W was approximately 62 nm/min, an increase from the approximately 35 nm/min observed in dc magnetron sputtering with a dc power of 80 W. A resistivity as low as 3x10{sup -4} {omega} cm and an improved resistivity distribution could be obtained in AZO thin films deposited on substrates at a low temperature of 150 deg. C by dc+rf-MS with the introduction of hydrogen gas with a content of 1.5%. This article describes the effects of adding a rf power component (i.e., dc+rf-MS deposition) as well as introducing H{sub 2} gas into dc magnetron-sputtering preparations of transparent conducting AZO thin films.

  13. Electron transport in Al-doped ZnO nanolayers obtained by atomic layer deposition

    NASA Astrophysics Data System (ADS)

    Blagoev, B. S.; Dimitrov, D. Z.; Mehandzhiev, V. B.; Kovacheva, D.; Terziyska, P.; Pavlic, J.; Lovchinov, K.; Mateev, E.; Leclercq, J.; Sveshtarov, P.

    2016-03-01

    Al-doped ZnO thin films with different Al content were prepared by atomic layer deposition (ALD). To carry out thermal ALD, diethyl zinc (DEZ) and tri-methyl aluminium (TMA) were used as Zn and Al precursors, respectively, and water vapor as oxidant. Various numbers n of DEZ and m TMA cycles was used to obtain different [ZnO] n [Al2O3] m films, where n = 100 - 95, m = 1 - 5. The X-ray diffraction analysis showed a predominantly (100) oriented polycrystalline phase for the ZnO:Al films with a low Al content (m = 1 - 3) and an amorphous structure for pure Al2O3. In ZnO:Al with a higher Al content (m = 4 - 6) the (100) reflection disappeared and the (002) peak increased. The resistivity of the films decreased with the increase in the Al content, reaching a minimum of 3.3×10-3 Ω cm at about 1.1 % Al2O3 for the [ZnO]99[Al2O3]2 sample; for higher dopant concentrations, the resistivity increased because of the increased crystal inhomogeneity due to axis reorientation.

  14. Sol-gel synthesis and characterization of undoped and Al-doped ZnO thin films for memristive application

    NASA Astrophysics Data System (ADS)

    Ayana, Dawit G.; Prusakova, Valentina; Collini, Cristian; Nardi, Marco V.; Tatti, Roberta; Bortolotti, Mauro; Lorenzelli, Leandro; Chiappini, Andrea; Chiasera, Alessandro; Ferrari, Maurizio; Lunelli, Lorenzo; Dirè, Sandra

    2016-11-01

    The Sol-gel route is a versatile method to fabricate multi-layer, dense and homogeneous ZnO thin films with a controlled thickness and defects for a memristive application. In this work, sol-gel derived multi-layer undoped and Al-doped ZnO thin films were prepared by a spin-coating technique on SiO2/Ti/Pt and silica glass substrates. The effect of both Al doping and curing conditions on the structural and morphological features of ZnO films was investigated by complementary techniques, including electron microscopy, atomic force microscopy, X-ray photoelectron spectroscopy, micro-Raman spectroscopy, and X-ray diffraction analysis. Electrical measurements were performed on SiO2/Ti/Pt/ZnO/Pt(dishes) and SiO2/Ti/Pt/ZnO(Al)/Pt(dishes) fabricated memristive cells and preliminary current-voltage curves were acquired.

  15. Al-doping effects on the photovoltaic performance of inverted polymer solar cells

    NASA Astrophysics Data System (ADS)

    Yu, Xuan; Shi, Ya-feng; Yu, Xiao-ming; Zhang, Jian-jun; Ge, Ya-ming; Chen, Li-qiao; Pan, Hong-jun

    2016-03-01

    The properties of Al-doped ZnO (AZO) play an important role in the photovoltaic performance of inverted polymer solar cells (PSCs), which is used as electron transport and hole blocking buffer layers. In this work, we study the effects of Al-doping level in AZO on device performance in detail. Results indicate that the device performance intensely depends on the Al-doping level. The AZO thin films with Al-doping atomic percentage of 1.0% possess the best conductivity. The resulting solar cells show the enhanced short current density and the fill factor ( FF) simultaneously, and the power conversion efficiency ( PCE) is improved by 74%, which are attributed to the reduced carrier recombination and the optimized charge transport and extraction between AZO and the active layer.

  16. Exploration of Al-Doped ZnO in Photovoltaic Thin Films

    NASA Astrophysics Data System (ADS)

    Ciccarino, Christopher; Sahiner, M. Alper

    The electrical properties of Al doped ZnO-based thin films represent a potential advancement in the push for increasing solar cell efficiency. Doping with Aluminum will theoretically decrease resistivity of the film and therefore achieve this potential as a viable option in the P-N junction phase of photovoltaic cells. The n-type semi-conductive characteristics of the ZnO layer will theoretically be optimized with the addition of Aluminum carriers. In this study, Aluminum doping concentrations ranging from 1-3% by mass were produced, analyzed, and compared. Films were developed onto ITO coated glass using the Pulsed Laser Deposition technique. Target thickness was 250 nm and ellipsometry measurements showed uniformity and accuracy in this regard. Active dopant concentrations were determined using Hall Effect measurements. Efficiency measurements showed possible applications of this doped compound, with upwards of 7% efficiency measured, using a Keithley 2602 SourceMeter set-up. XRD scans showed highly crystalline structures, with effective Al intertwining of the hexagonal wurtzile ZnO molecular structure. This alone indicates a promising future of collaboration between these two materials.

  17. Reversible Change in Electrical and Optical Properties in Epitaxially Grown Al-Doped ZnO Thin Films

    SciTech Connect

    Noh, J. H.; Jung, H. S.; Lee, J. K.; Kim, J. Y; Cho, C. M.; An, J.; Hong, K. S.

    2008-01-01

    Aluminum-doped ZnO (AZO) films were epitaxially grown on sapphire (0001) substrates using pulsed laser deposition. As-deposited AZO films had a low resistivity of 8.01 x 10{sup -4} {Omega} cm. However, after annealing at 450 C in air, the electrical resistivity of the AZO films increased to 1.97 x 10{sup -1} {Omega} cm because of a decrease in the carrier concentration. Subsequent annealing of the air-annealed AZO films in H{sub 2} recovered the electrical conductivity of the AZO films. In addition, the conductivity change was reversible upon repeated air and H{sub 2} annealing. A photoluminescence study showed that oxygen interstitial (O{sub i}) is a critical material parameter allowing for the reversible control of the electrical conducting properties of AZO films.

  18. Effect of sputtering power on crystallinity, intrinsic defects, and optical and electrical properties of Al-doped ZnO transparent conducting thin films for optoelectronic devices

    NASA Astrophysics Data System (ADS)

    Hu, Yu Min; Li, Jung Yu; Chen, Nai Yun; Chen, Chih Yu; Han, Tai Chun; Yu, Chin Chung

    2017-02-01

    The crystallinity and intrinsic defects of transparent conducting oxide (TCO) films have a high impact on their optical and electrical properties and therefore on the performance of devices incorporating such films, including flat panel displays, electro-optical devices, and solar cells. The optical and electrical properties of TCO films can be modified by tailoring their deposition parameters, which makes proper understanding of these parameters crucial. Magnetron sputtering is the most adaptable method for preparing TCO films used in industrial applications. In this study, we investigate the direct and inter-property correlation effects of sputtering power (PW) on the crystallinity, intrinsic defects, and optical and electrical properties of Al-doped ZnO (AZO) TCO films. All of the films were preferentially c-axis-oriented with a wurtzite structure and had an average transmittance of over 80% in the visible wavelength region. Scanning electron microscopy images revealed significantly increased AZO film grain sizes for PW ≥ 150 W, which may lead to increased conductivity, carrier concentration, and optical band gaps but decreased carrier mobility and in-plane compressive stress in AZO films. Photoluminescence results showed that, with increasing PW, the near band edge emission gradually dominates the defect-related emissions in which zinc interstitial (Zni), oxygen vacancy (VO), and oxygen interstitial (Oi) are possibly responsible for emissions at 3.08, 2.8, and 2.0 eV, respectively. The presence of Zni- and Oi-related emissions at PW ≥ 150 W indicates a slight increase in the presence of Al atoms substituted at Zn sites (AlZn). The presence of Oi at PW ≥ 150 W was also confirmed by X-ray photoelectron spectroscopy results. These results clearly show that the crystallinity and intrinsic-defect type of AZO films, which dominate their optical and electrical properties, may be controlled by PW. This understanding may facilitate the development of TCO

  19. Poole-Frenkel effect on electrical characterization of Al-doped ZnO films deposited on p-type GaN

    SciTech Connect

    Huang, Bohr-Ran; Liao, Chung-Chi; Ke, Wen-Cheng Chang, Yuan-Ching; Huang, Hao-Ping; Chen, Nai-Chuan

    2014-03-21

    This paper presents the electrical properties of Al-doped ZnO (AZO) films directly grown on two types of p-type GaN thin films. The low-pressure p-GaN thin films (LP-p-GaN) exhibited structural properties of high-density edge-type threading dislocations (TDs) and compensated defects (i.e., nitrogen vacancy). Compared with high-pressure p-GaN thin films (HP-p-GaN), X-ray photoemission spectroscopy of Ga 3d core levels indicated that the surface Fermi-level shifted toward the higher binding-energy side by approximately 0.7 eV. The high-density edge-type TDs and compensated defects enabled surface Fermi-level shifting above the intrinsic Fermi-level, causing the surface of LP-p-GaN thin films to invert to n-type semiconductor. A highly nonlinear increase in leakage current regarding reverse-bias voltage was observed for AZO/LP-p-GaN. The theoretical fits for the reverse-bias voltage region indicated that the field-assisted thermal ionization of carriers from defect associated traps, which is known as the Poole-Frenkel effect, dominated the I-V behavior of AZO/LP-p-GaN. The fitting result estimated the trap energy level at 0.62 eV below the conduction band edge. In addition, the optical band gap increased from 3.50 eV for as-deposited AZO films to 3.62 eV for 300 °C annealed AZO films because of the increased carrier concentration. The increasing Fermi-level of the 300 °C annealed AZO films enabled the carrier transport to move across the interface into the LP-p-GaN thin films without any thermal activated energy. Thus, the Ohmic behavior of AZO contact can be achieved directly on the low-pressure p-GaN films at room temperature.

  20. Characteristics of Al-doped ZnO thin films prepared in Ar + H{sub 2} atmosphere and their vacuum annealing behavior

    SciTech Connect

    Zhu, Bailin; Lü, Kun; Wang, Jun; Li, Taotao; Wu, Jun; Zeng, Dawen; Xie, Changsheng

    2013-11-15

    The microstructure and electrical–optical properties of Al-doped ZnO (AZO) films have been studied as a function of H{sub 2} flux in the magnetron sputtering process at 150 °C and postannealing temperature in vacuum. As H{sub 2} flux increases in the sputtering gas, the AZO films deposited have a (002) preferred orientation rather than the mixed (100) and (002) orientations, the grain size shows a tendency to first increase then decrease, and (002) diffraction peak position is inclined to shift to higher angles first then to lower angles. The resistivity of the films first decreases then increases with H{sub 2} flux, and the lowest resistivity of 4.02 × 10{sup −4}Ω cm is obtained at a H{sub 2} flux of 10 sccm. The average transmittance in the visible region shows little dependence on H{sub 2} flux. As a whole, the AZO films with higher values of figure of merit are obtained when the H{sub 2} flux is in the range of 6–12 sccm. The AZO films deposited in Ar and Ar + H{sub 2} exhibit different annealing behaviors. For the AZO film deposited in Ar, the grain size gradually increases, the stresses are relaxed, the resistivity first decreases then increases, and the average transmittance in the visible region is unchanged initially then somewhat decreased as annealing temperature is increased. The optimum annealing temperature for improving properties of AZO films deposited in Ar is 300 °C. For the AZO films deposited in Ar + H{sub 2}, annealing does not significantly change the microstructure but increases the resistivity of the films; the average transmittance in the visible region remains unchanged initially but greatly reduced with further increase in annealing temperature. The carrier transport in the as-deposited and annealed films appears to be controlled by a mechanism of grain boundary scattering, and the value of E{sub g} increases with the increase in carrier concentration due to Burstein–Moss effect.

  1. Temperature-dependence on the structural, optical, and magnetic properties of Al-doped ZnO nanoparticles

    NASA Astrophysics Data System (ADS)

    Lu, Xiaofei; Liu, Yongsheng; Si, Xiaodong; Shen, Yulong; Yu, Wenying; Wang, Wenli; Luo, Xiaojing; Zhou, Tao

    2016-12-01

    Al-doped ZnO nanoparticles synthesized by a hydrothermal method at relatively low temperature synthesis and anneal were reported in this paper. The XRD results reveal that all the samples have a hexagonal wurtzite structure. A higher synthesis temperature leads to a slight increase in the grain size and improvement of the crystal quality. Different morphologies evolved from acicular closely-packed morphology to dandelion-like 3D nanostructures can be obtained by controlling the synthesis temperatures. Moreover, the influence of synthesis temperature on optical property indicates that the absorption ability in ultraviolet region declines with increasing the synthesis temperature. In addition, the annealed nanoparticles have an enhancement of the room temperature ferromagnetism (RT-FM) and the saturation magnetization (MS). Those results suggest that Al-doped ZnO nanoparticles synthesized at relatively low temperature could be a promising candidate for photosensitive and room temperature nanolasers applications.

  2. High carrier concentration ZnO nanowire arrays for binder-free conductive support of supercapacitors electrodes by Al doping.

    PubMed

    Zheng, Xin; Sun, Yihui; Yan, Xiaoqin; Sun, Xu; Zhang, Guangjie; Zhang, Qian; Jiang, Yaru; Gao, Wenchao; Zhang, Yue

    2016-12-15

    Doping semiconductor nanowires (NWs) for altering their electrical and optical properties is a critical strategy for tailoring the performance of nanodevices. Here, we prepared in situ Al-doped ZnO nanowire arrays by using continuous flow injection (CFI) hydrothermal method to promote the conductivity. This reasonable method offers highly stable precursor concentration for doping that effectively avoid the appearance of the low conductivity ZnO nanosheets. Benefit from this, three orders of magnitude rise of the carrier concentration from 10(16)cm(-3) to 10(19)cm(-3) can be achieved compared with the common hydrothermal (CH) mothed in Mott-Schottky measurement. Possible effect of Al-doping was discussed by first-principle theory. On this basis, Al-doped ZnO nanowire arrays was developed as a binder-free conductive support for supercapacitor electrodes and high capacitance was triggered. It is owing to the dramatically decreased transfer resistance induced by the growing free-moving electrons and holes. Our results have a profound significance not merely in the controlled synthesis of other doping nanomaterials by co-precipitation method but also in the application of binder-free energy materials or other materials.

  3. Mediator-free interaction of glucose oxidase, as model enzyme for immobilization, with Al-doped and undoped ZnO thin films laser-deposited on polycarbonate supports.

    PubMed

    V T K P, Fidal; Inguva, Saikumar; Krishnamurthy, Satheesh; Marsili, Enrico; Mosnier, Jean-Paul; T S, Chandra

    2017-01-01

    Al doped and undoped ZnO thin films were deposited by pulsed-laser deposition on polycarbonate sheets. The films were characterized by optical transmission, Hall effect measurement, XRD and SEM. Optical transmission and surface reflectometry studies showed good transparency with thicknesses ∼100nm and surface roughness of 10nm. Hall effect measurements showed that the sheet carrier concentration was -1.44×10(15)cm(-2) for AZO and -6×10(14)cm(-2) for ZnO. The films were then modified by drop-casting glucose oxidase (GOx) without the use of any mediators. Higher protein concentration was observed on ZnO as compared to AZO with higher specific activity for ZnO (0.042Umg(-1)) compared to AZO (0.032Umg(-1)), and was in agreement with cyclic voltemmetry (CV). X-ray photoelectron spectroscopy (XPS) suggested that the protein was bound by dipole interactions between AZO lattice oxygen and the amino group of the enzyme. Chronoamperometry showed sensitivity of 5.5μAmM(-1)cm(-2) towards glucose for GOx/AZO and 2.2μAmM(-1)cm(-2) for GOx/ZnO. The limit of detection (LoD) was 167μM of glucose for GOx/AZO, as compared to 360μM for GOx/ZnO. The linearity was 0.28-28mM for GOx/AZO whereas it was 0.6-28mM for GOx/ZnO with a response time of 10s. Possibly due to higher enzyme loading, the decrease of impedance in presence of glucose was larger for GOx/ZnO as compared to GOx/AZO in electrochemical impedance spectroscopy (EIS). Analyses with clinical blood serum samples showed that the systems had good reproducibility and accuracy. The characteristics of novel ZnO and AZO thin films with GOx as a model enzyme, should prove useful for the future fabrication of inexpensive, highly sensitive, disposable electrochemical biosensors for high throughput diagnostics.

  4. Enhanced photoluminescence and Raman properties of Al-Doped ZnO nanostructures prepared using thermal chemical vapor deposition of methanol assisted with heated brass.

    PubMed

    Thandavan, Tamil Many K; Gani, Siti Meriam Abdul; San Wong, Chiow; Md Nor, Roslan

    2015-01-01

    Vapor phase transport (VPT) assisted by mixture of methanol and acetone via thermal evaporation of brass (CuZn) was used to prepare un-doped and Al-doped zinc oxide (ZnO) nanostructures (NSs). The structure and morphology were characterized by field emission scanning electron microscopy (FESEM) and x-ray diffraction (XRD). Photoluminescence (PL) properties of un-doped and Al-doped ZnO showed significant changes in the optical properties providing evidence for several types of defects such as zinc interstitials (Zni), oxygen interstitials (Oi), zinc vacancy (Vzn), singly charged zinc vacancy (VZn-), oxygen vacancy (Vo), singly charged oxygen vacancy (Vo+) and oxygen anti-site defects (OZn) in the grown NSs. The Al-doped ZnO NSs have exhibited shifted PL peaks at near band edge (NBE) and red luminescence compared to the un-doped ZnO. The Raman scattering results provided evidence of Al doping into the ZnO NSs due to peak shift from 145 cm-1 to an anomalous peak at 138 cm-1. Presence of enhanced Raman signal at around 274 and 743 cm-1 further confirmed Al in ZnO NSs. The enhanced D and G band in all Al-doped ZnO NSs shows possible functionalization and doping process in ZnO NSs.

  5. Enhanced Photoluminescence and Raman Properties of Al-Doped ZnO Nanostructures Prepared Using Thermal Chemical Vapor Deposition of Methanol Assisted with Heated Brass

    PubMed Central

    Thandavan, Tamil Many K.; Gani, Siti Meriam Abdul; San Wong, Chiow; Md. Nor, Roslan

    2015-01-01

    Vapor phase transport (VPT) assisted by mixture of methanol and acetone via thermal evaporation of brass (CuZn) was used to prepare un-doped and Al-doped zinc oxide (ZnO) nanostructures (NSs). The structure and morphology were characterized by field emission scanning electron microscopy (FESEM) and x-ray diffraction (XRD). Photoluminescence (PL) properties of un-doped and Al-doped ZnO showed significant changes in the optical properties providing evidence for several types of defects such as zinc interstitials (Zni), oxygen interstitials (Oi), zinc vacancy (Vzn), singly charged zinc vacancy (VZn-), oxygen vacancy (Vo), singly charged oxygen vacancy (Vo+) and oxygen anti-site defects (OZn) in the grown NSs. The Al-doped ZnO NSs have exhibited shifted PL peaks at near band edge (NBE) and red luminescence compared to the un-doped ZnO. The Raman scattering results provided evidence of Al doping into the ZnO NSs due to peak shift from 145 cm-1 to an anomalous peak at 138 cm-1. Presence of enhanced Raman signal at around 274 and 743 cm-1 further confirmed Al in ZnO NSs. The enhanced D and G band in all Al-doped ZnO NSs shows possible functionalization and doping process in ZnO NSs. PMID:25756598

  6. Enhanced light extraction of GaN-based light-emitting diodes with periodic textured SiO2 on Al-doped ZnO transparent conductive layer

    NASA Astrophysics Data System (ADS)

    Yu, Zhao; Bingfeng, Fan; Yiting, Chen; Yi, Zhuo; Zhoujun, Pang; Zhen, Liu; Gang, Wang

    2016-07-01

    We report an effective enhancement in light extraction of GaN-based light-emitting diodes (LEDs) with an Al-doped ZnO (AZO) transparent conductive layer by incorporating a top regular textured SiO2 layer. The 2 inch transparent through-pore anodic aluminum oxide (AAO) membrane was fabricated and used as the etching mask. The periodic pore with a pitch of about 410 nm was successfully transferred to the surface of the SiO2 layer without any etching damages to the AZO layer and the electrodes. The light output power was enhanced by 19% at 20 mA and 56% at 100 mA compared to that of the planar LEDs without a patterned surface. This approach offers a technique to fabricate a low-cost and large-area regular pattern on the LED chip for achieving enhanced light extraction without an obvious increase of the forward voltage. ).

  7. Efficiency enhancement of regular-type perovskite solar cells based on Al-doped ZnO nanorods as electron transporting layers

    NASA Astrophysics Data System (ADS)

    Huang, Zheng-Lun; Chen, Chih-Ming; Lin, Zheng-Kun; Yang, Sheng-Hsiung

    2017-02-01

    In this paper, we first incorporated Al(NO3)3·9H2O as the Al source into ZnO nanorods (NRs) lattice via the hydrothermal method to modify nature properties of ZnO NRs for the fabrication of perovskite solar cells (PSCs). The X-ray diffraction (XRD) pattern of Al-doped ZnO NRs exhibits higher 2θ values and stronger intensity of (002) plane. Larger optical band gap and higher electrical conductivity of Al-doped ZnO NRs are also observed relative to non-doped ZnO ones. The steady-state photoluminescence shows effective charge extraction and collection at the interface between Al-doped ZnO NRs and perovskite layer. The optimized PSC based on Al-doped ZnO NRs showed an open-circuit voltage of 0.84 V, a short-circuit current density of 21.93 mA/cm2, a fill factor of 57%, and a power conversion efficiency of 10.45% that was 23% higher than the non-doped ZnO ones.

  8. Band alignment at the interface between Ni-doped Cr2O3 and Al-doped ZnO: implications for transparent p-n junctions

    NASA Astrophysics Data System (ADS)

    Arca, Elisabetta; McInerney, Michael A.; Shvets, Igor V.

    2016-06-01

    The realization of transparent electronic and optoelectronic devices requires the use of transparent p-n junctions. In this context, understanding the band alignment at the interface between the p- and n-components represents a fundamental step towards the realization of high performance devices. In this work, the band alignment at the interface between Al-doped ZnO (AZO) and Ni-doped Cr2O3 has been analysed. The formation and evolution of the core levels as the interface progressively forms have been followed by means of x-ray Photoelectron Spectroscopy, x-ray diffraction and x-ray reflectivity. A type two (staggered) band alignment was identified, with the valence band offset and conduction band offset found to be 2.6 eV and 2.5 eV, respectively. The electrical behaviour will be discussed in terms of the position of the bands, the presence of band bending and the expected built-in potential and how these can be engineered in order to achieve the maximum performance for this hetero-structure.

  9. Electrically tunable diffraction efficiency from gratings in Al-doped ZnO

    NASA Astrophysics Data System (ADS)

    George, David; Li, Li; Lowell, David; Ding, Jun; Cui, Jingbiao; Zhang, Hualiang; Philipose, Usha; Lin, Yuankun

    2017-02-01

    Transparent conducting aluminum-doped zinc oxide (AZO) can be used as part of an active plasmonic device due to its electrically tunable permittivity, which is accomplished by changing the carrier concentration with electrical biasing. In this letter, we report a continuous electrical tuning of diffraction efficiency from AZO gratings in the visible range (specifically 532 nm) when the AZO is under bias voltages between -1 V and -3.5 V. The carrier concentration in AZO under negative bias has been measured and simulated. The diffraction efficiency changes have been explained by the carrier concentration variation and induced complex refractive index change at the Al2O3 and AZO interface. The reported results can lead toward the application of post-fabrication tuning of optoelectronic devices using AZO.

  10. Room Temperature Growth of Al-Doped ZnO Thin Films by Reactive DC Sputtering Technique with Metallic Target

    NASA Astrophysics Data System (ADS)

    Hasuike, Noriyuki; Nishio, Koji; Kisoda, Kenji; Harima, Hiroshi

    2013-01-01

    We prepared Al-deopd ZnO (AZO) films by reactive DC sputtering method using metallic target at room temperature. All the tested AZO films (0<[Al]<8.9%) with the transmittance above 85% in visible region were successfully grown on quartz substrate. All the AZO films have wurtzite structure with no impurity phase. The AZO films with [Al]<2.9% have the preferential orientation in c-axis direction, and the orientation became indistinct as increasing in Al content. In the optical measurement, the absorption edge was shifted from 3.30 to 3.66 eV due to Burstein-Moss effect, and the electron densities were roughly estimated at 2.5×1019 to 1.5×1021 cm-3, respectively. On the other hand, the high transmittance in infrared region suggested low electron mobility. Since this gives rise to the high electric resistivity, the further improvements and optimization of the growth conditions are required for the realization of AZO based transparent conductive.

  11. Highly (0001)-oriented Al-doped ZnO polycrystalline films on amorphous glass substrates

    NASA Astrophysics Data System (ADS)

    Nomoto, Junichi; Inaba, Katsuhiko; Osada, Minoru; Kobayashi, Shintaro; Makino, Hisao; Yamamoto, Tetsuya

    2016-09-01

    Very thin aluminum-doped zinc oxide (AZO) films with a well-defined (0001) orientation and a surface roughness of 0.357 nm were deposited on amorphous glass substrates at a temperature of 200 °C by radio frequency magnetron sputtering, which are promising, particularly in terms of orientation evolution, surface roughness, and carrier transport, as buffer layers for the subsequent deposition of highly (0001)-oriented AZO polycrystalline films of 490 nm thickness by direct current (DC) magnetron sputtering. Sintered AZO targets with an Al2O3 content of 2.0 wt. % were used. DC magnetron sputtered AZO films on bare glass substrates showed a mixed (0001) and the others crystallographic orientation, and exhibited a high contribution of grain boundary scattering to carrier transport, resulting in reduced Hall mobility. Optimizing the thickness of the AZO buffer layers to 10 nm led to highly (0001)-oriented bulk AZO films with a marked reduction in the above contribution, resulting in AZO films with improved Hall mobility together with enhanced carrier concentration. The surface morphology and point defect density were also improved by applying the buffer layers, as shown by atomic force microscopy and Raman spectroscopy, respectively.

  12. Fabrication of Ag nanowire and Al-doped ZnO hybrid transparent electrodes

    NASA Astrophysics Data System (ADS)

    You, Sslimsearom; Park, Yong Seo; Choi, Hyung Wook; Kim, Kyung Hwan

    2016-01-01

    Among the materials used as transparent electrodes, silver nanowires (AgNWs) have attracted attention because of their high transmittance and excellent conductivity. However, AgNWs have shortcomings, including their poor adhesion, oxidation by atmospheric oxygen, and unstable characteristics at high temperature. To overcome these shortcomings, multi-layer thin films with an aluminum-doped zinc oxide (AZO)/AgNW/AZO structure were fabricated using facing targets sputtering. The samples heated to 350 °C exhibited stable electrical characteristics. In addition, the adhesion to the substrate was improved compared with AgNWs layer. The AZO/AgNW/AZO thin films with multilayer structure overcame the shortcomings of AgNWs, and we propose their use as transparent electrodes with excellent properties for optoelectronic applications.

  13. Structure and thermoelectric properties of Al-doped ZnO films prepared by thermal oxidization under high magnetic field

    NASA Astrophysics Data System (ADS)

    Liu, Shiying; Peng, Sunjuan; Ma, Jun; Li, Guojian; Qin, Xuesi; Li, Mengmeng; Wang, Qiang

    2017-04-01

    This paper studies the effects of high magnetic field (HMF) on the structure, optical and thermoelectric properties of the doped ZnO thin films. The results show that both Al dopant and application of HMF can affect the crystal structure, surface morphology, elemental distribution and so on. The particles of the thin films become small and regular by doping Al. The ZnO films oxidized from the Au/Zn bilayer have needle structure. The ZnO films oxidized from the Au/Zn-Al bilayer transform to spherical from hexagonal due to the application of HMF. The transmittance decreases with doping Al because of the opaque of Al element and decreases with the application of HMF due to the dense structure obtained under HMF. Electrical resistivity (ρ) of the ZnO films without Al decreases with increasing measurement temperature (T) and is about 1.5 × 10-3 Ω·m at 210 °C. However, the ρ of the Al-doped ZnO films is less than 10-5 Ω·m. The Seebeck coefficient (S) of the films oxidized from the Au/Zn-Al films reduces with increasing T. The S values oxidized under 0 T and 12 T conditions are 2.439 μV/K and -3.415 μV/K at 210 °C, respectively. Power factor reaches the maximum value (3.198 × 10-4 W/m·K2) at 210 °C for the film oxidized under 12 T condition. These results indicate that the Al dopant and the application of HMF can be used to control structure and thermoelectric properties of doped ZnO films.

  14. Localized surface plasmon polariton resonance in holographically structured Al-doped ZnO

    NASA Astrophysics Data System (ADS)

    George, David; Li, Li; Jiang, Yan; Lowell, David; Mao, Michelle; Hassan, Safaa; Ding, Jun; Cui, Jingbiao; Zhang, Hualiang; Philipose, Usha; Lin, Yuankun

    2016-07-01

    In this paper, we studied the localized surface plasmon polariton (SPP) resonance in hole arrays in transparent conducting aluminum-doped zinc oxide (AZO). CMOS-compatible fabrication process was demonstrated for the AZO devices. The localized SPP resonance was observed and confirmed by electromagnetic simulations. Using a standing wave model, the observed SPP was dominated by the standing-wave resonance along (1,1) direction in square lattices. This research lays the groundwork for a fabrication technique that can contribute to the core technology of future integrated photonics through its extension into tunable conductive materials.

  15. Evolution of Metallic Conductivity in Epitaxial ZnO Thin Films on Systematic Al Doping

    NASA Astrophysics Data System (ADS)

    Chinta, P. V.; Lozano, O.; Wadekar, P. V.; Hsieh, W. C.; Seo, H. W.; Yeh, S. W.; Liao, C. H.; Tu, L. W.; Ho, N. J.; Zhang, Y. S.; Pang, W. Y.; Lo, Ikai; Chen, Q. Y.; Chu, W. K.

    2017-04-01

    The metal-like behaviors and metal-semiconductor transition (MST) of highly conducting Zn1- x Al x O ( x = 1 at.% to 10 at.%) thin films deposited by cosputtering on a-Al2O3 have been investigated. The temperature-dependent transport properties reveal that the Zn1- x Al x O films were highly degenerate. The MST temperature ( T MST) varied from 190 K to 260 K with Al doping from x = 2 at.% to 10 at.%. A simple degenerate band model is used to explain the observed shift in the metal-like behaviors upon Al doping. An empirical approach is used to analyze the resistivity functional below TMST, taking into account the contributions from both the weak localization and Coulomb interactions in explaining the MST. Analysis by least-square fittings of measured data shows excellent agreement. The optical bandgap increases with carrier concentration as n Hall 2/3 , which is interpreted as the Burstein-Moss shift for a nonparabolic effective mass. Such nonparabolicity is scrutinized by quantitative comparisons of the plasma edge values n optical versus the n Hall values.

  16. Evolution of Metallic Conductivity in Epitaxial ZnO Thin Films on Systematic Al Doping

    NASA Astrophysics Data System (ADS)

    Chinta, P. V.; Lozano, O.; Wadekar, P. V.; Hsieh, W. C.; Seo, H. W.; Yeh, S. W.; Liao, C. H.; Tu, L. W.; Ho, N. J.; Zhang, Y. S.; Pang, W. Y.; Lo, Ikai; Chen, Q. Y.; Chu, W. K.

    2016-11-01

    The metal-like behaviors and metal-semiconductor transition (MST) of highly conducting Zn1-x Al x O (x = 1 at.% to 10 at.%) thin films deposited by cosputtering on a-Al2O3 have been investigated. The temperature-dependent transport properties reveal that the Zn1-x Al x O films were highly degenerate. The MST temperature (T MST) varied from 190 K to 260 K with Al doping from x = 2 at.% to 10 at.%. A simple degenerate band model is used to explain the observed shift in the metal-like behaviors upon Al doping. An empirical approach is used to analyze the resistivity functional below TMST, taking into account the contributions from both the weak localization and Coulomb interactions in explaining the MST. Analysis by least-square fittings of measured data shows excellent agreement. The optical bandgap increases with carrier concentration as n {Hall/2/3}, which is interpreted as the Burstein-Moss shift for a nonparabolic effective mass. Such nonparabolicity is scrutinized by quantitative comparisons of the plasma edge values n optical versus the n Hall values.

  17. Effects of Concentration of Precursor and Annealing Temperature on the Optical Properties of Nanostructured Al- doped Zinc Oxide (AZO) Thin films Prepared by Sol-Gel Spin Coating Technique

    NASA Astrophysics Data System (ADS)

    Yusuf, Gbadebo; Awodugba, Ayodeji; Raimi, Adepoju; Efunwole, Hezekiah; Familusi, Timothy

    2013-03-01

    This work investigates the effects of concentration of precursor and annealing temperature on the optical properties of nanostructured Al-doped (AZO) zinc oxide thin films prepared by sol-gel spin coating technique. The sols were prepared using concentration of zinc acetate dehydrate which was varied between 0.1 and 1.4 mole/liter. Aluminium chloride was used as dopant while the annealing temperature of 400° to 650° was chosen. The results show that the concentration between 0.3 to 0.6 moles/liter zinc acetate dehydrate in solution resulted in good thin films with high preferential c-axis orientation and optical transmission reveal a good transmittance within the visible wavelength spectrum region while the concentrations that fall outside this range did not yield films with good c-axis orientation. The films deposited at annealing temperatures 500° and 650° showed surface structures much smaller than 400°. The Spin coating technique creates ZnO films with potential for application as transparent electrodes in optoelectronic devices such as solar cell. The Authors would like to Acknowledge the encouragement and financial support from the Management of Osun state Polytechnic, Iree.

  18. Fabrication of nanostructured Al-doped ZnO thin film for methane sensing applications

    NASA Astrophysics Data System (ADS)

    Shafura, A. K.; Sin, N. D. Md.; Azhar, N. E. I.; Saurdi, I.; Uzer, M.; Mamat, M. H.; Shuhaimi, A.; Alrokayan, Salman A. H.; Khan, Haseeb A.; Rusop, M.

    2016-07-01

    CH4 gas sensor was fabricated using spin-coating method of the nanostructured ZnO thin film. Effect of annealing temperature on the electrical and structural properties of the film was investigated. Dense nanostructured ZnO film are obtained at higher annealing temperature. The optimal condition of annealing temperature is 500°C which has conductivity and sensitivity value of 3.3 × 10-3 S/cm and 11.5%, respectively.

  19. Improved photovoltaic performance of inverted polymer solar cells through a sol-gel processed Al-doped ZnO electron extraction layer.

    PubMed

    Kim, Jun Young; Cho, Eunae; Kim, Jaehoon; Shin, Hyeonwoo; Roh, Jeongkyun; Thambidurai, Mariyappan; Kang, Chan-mo; Song, Hyung-Jun; Kim, SeongMin; Kim, Hyeok; Lee, Changhee

    2015-09-21

    We demonstrate that nanocrystalline Al-doped zinc oxide (n-AZO) thin film used as an electron-extraction layer can significantly enhance the performance of inverted polymer solar cells based on the bulk heterojunction of poly[[9-(1-octylnonyl)-9H-carbazole-2,7-diyl]-2,5-thiophenediyl-2,1,3-benzothiadiazole-4,7-diyl-2,5-thiophenediyl] (PCDTBT) and [6,6]-phenyl C(71)-butyric acid methyl ester (PC(70)BM). A synergistic study with both simulation and experiment on n-AZO was carried out to offer a rational guidance for the efficiency improvement. As a result, An n-AZO film with an average grain size of 13 to 22 nm was prepared by a sol-gel spin-coating method, and a minimum resistivity of 2.1 × 10(-3) Ω·cm was obtained for an Al-doping concentration of 5.83 at.%. When an n-AZO film with a 5.83 at.% Al concentration was inserted between the ITO electrode and the active layer (PCDTBT:PC(70)BM), the power conversion efficiency increased from 3.7 to 5.6%.

  20. Optical characterization of pure and Al-doped ZnO prepared by sol-gel method

    NASA Astrophysics Data System (ADS)

    Belka, Radosław; Keczkowska, Justyna; Kasińska, Justyna

    2016-09-01

    In this paper the preparation process and optical characterization of pure and Al3+ doped zinc oxide (Al:ZnO) coatings will be presented. ZnO based materials have been studied extensively due to their potential applications in optoelectronic devices as conductive gas sensors, transparent conductive, electrodes, solar cell windows, varistors, UVfilters or photovoltaic cells. It is II-VI semiconductor with wide-band gap of 3.37 eV and large exciton binding energy of 60meV. It is possible to improve the conductivity of ZnO coating by intentionally doping ZnO with aluminium ions during preparation process. Such transparent and conducting thin films, known as AZO (Aluminium Zinc Oxide) films, are very good candidate for application as transparent conducting materials in many optoelectronic devices. The well-known sol-gel method is used for preparation of solution, coated on glass substrates by dip coating process. Prepared samples were investigated by Raman and UV-VIS spectroscopy. Transmittance as well as specular and diffuse reflectance spectroscopy methods were used for studies of optical parameters. We found that Al admixture influences on optical bandgap of ZnO.

  1. The effect of dopant concentration on properties of transparent conducting Al-doped ZnO thin films for efficient Cu2ZnSnS4 thin-film solar cells prepared by electrodeposition method

    NASA Astrophysics Data System (ADS)

    Mkawi, E. M.; Ibrahim, K.; Ali, M. K. M.; Farrukh, M. A.; Mohamed, A. S.

    2015-11-01

    Al-doped ZnO (AZO) thin films were potentiostatically deposited on indium tin oxide substrates. The influence of the doping level of the ZnO:Al films was investigated. The results of the X-ray diffraction and scanning electron microscopy analysis revealed that the structural properties of the AZO films were found polycrystalline with a hexagonal wurtzite-type structure along the (002) plane. The grain size of the AZO films was observed as approximately 3 μm in the film doping with 4 mol% ZnO:Al concentration. The thin films also exhibited an optical transmittance as high as 90 % in the wavelength range of 100-1,000 nm. The optical band gap increased from 3.33 to 3.45 eV. Based on the Hall studies, the lowest resistivity (4.78 × 10-3 Ω cm) was observed in the film doping with 3 mol% ZnO:Al concentration. The sheet resistant, carrier concentration and Hall mobility values were found as 10.78 Ω/ square, 9.03 × 1018 cm-3 and 22.01 cm2/v s, respectively, which showed improvements in the properties of AZO thin films. The ZnO:Al thin films were used as a buffer layer in thin-film solar cells with the structure of soda-lime glass/Mo/Cu2ZnSnS4/ZnS/ZnO/Al grid. The best solar cell efficiency was 2.3 % with V OC of 0.430 V, J SC of 8.24 mA cm-2 and FF of 68.1 %.

  2. High-performance InGaN/GaN MQW LEDs with Al-doped ZnO transparent conductive layers grown by MOCVD using H2O as an oxidizer

    NASA Astrophysics Data System (ADS)

    Lin, Jia-Yong; Pei, Yan-Li; Zhuo, Yi; Chen, Zi-Min; Hu, Rui-Qin; Cai, Guang-Shuo; Wang, Gang

    2016-11-01

    In this study, the high performance of InGaN/GaN multiple quantum well light-emitting diodes (LEDs) with Al-doped ZnO (AZO) transparent conductive layers (TCLs) has been demonstrated. The AZO-TCLs were fabricated on the n+-InGaN contact layer by metal organic chemical vapor deposition (MOCVD) using H2O as an oxidizer at temperatures as low as 400 °C without any post-deposition annealing. It shows a high transparency (98%), low resistivity (510-4 Ω·cm), and an epitaxial-like excellent interface on p-GaN with an n+-InGaN contact layer. A forward voltage of 2.82 V @ 20 mA was obtained. Most importantly, the power efficiencies can be markedly improved by 53.8%@20 mA current injection and 39.6%@350 mA current injection compared with conventional LEDs with indium tin oxide TCL (LED-III), and by 28.8%@20 mA current injection and 4.92%@350 mA current injection compared with LEDs with AZO-TCL prepared by MOCVD using O2 as an oxidizer (LED-II), respectively. The results indicate that the AZO-TCL grown by MOCVD using H2O as an oxidizer is a promising TCL for a low-cost and high-efficiency GaN-based LED application. Project supported by the National Natural Science Foundation of China (Grant Nos. 61204091, 61404177, 51402366, and U1201254) and the Science and Technology Planning Project of Guangdong Province, China (Grant No. 2015B010132006).

  3. Investigations on the roles of position controlled Al layers incorporated into an Al-doped ZnO active channel during atomic layer deposition for thin film transistor applications

    NASA Astrophysics Data System (ADS)

    Kim, Eom-Ji; Lee, Won-Ho; Yoon, Sung-Min

    2016-03-01

    We investigated the effects of the distance between incorporated Al layers on the characteristics of thin-film transistors (TFTs) using Al-doped ZnO (AZO) as the active channels. The intervals between the Al layers were controlled by designing the sequences of Al cycles during the atomic-layer deposition. Two configurations were designed as “scatter” or “focus”, in which the incorporated Al layers were dispersed to bottom and top sides or concentrated on the center region. Electrical conductivities of “scatter” and “focus” films were observed to be different. While the dispersed Al layers could work as dopants, a too-close interval between the Al layers suppressed carrier transport, even with the same incorporated Al amounts. These differences were reflected on the device characteristics. The TFT performance of the “scatter” device was better than that of the “focus” device. Consequently, adequately dispersed Al layers in the AZO channel are very important for improving device performance.

  4. Influence of electron beam irradiation on nonlinear optical properties of Al doped ZnO thin films for optoelectronic device applications in the cw laser regime

    NASA Astrophysics Data System (ADS)

    Antony, Albin; Pramodini, S.; Poornesh, P.; Kityk, I. V.; Fedorchuk, A. O.; Sanjeev, Ganesh

    2016-12-01

    We present the studies on third-order nonlinear optical properties of Al doped ZnO thin films irradiated with electron beam at different dose rate. Al doped ZnO thin films were deposited on a glass substrate by spray pyrolysis deposition technique. The thin films were irradiated using the 8 MeV electron beam from microtron ranging from 1 kG y to 5 kG y. Nonlinear optical studies were carried out by employing the single beam Z-scan technique to determine the sign and magnitude of absorptive and refractive nonlinearities of the irradiated thin films. Continuous wave He-Ne laser operating at 633 nm was used as source of excitation. The open aperture Z-scan measurements indicated the sample displays reverse saturable absorption (RSA) process. The negative sign of the nonlinear refractive index n2 was noted from the closed aperture Z-scan measurements indicates, the films exhibit self-defocusing property due to thermal nonlinearity. The third-order nonlinear optical susceptibility χ(3) varies from 8.17 × 10-5 esu to 1.39 × 10-3 esu with increase in electron beam irradiation. The present study reveals that the irradiation of electron beam leads to significant changes in the third-order optical nonlinearity. Al doped ZnO displays good optical power handling capability with optical clamping of about ∼5 mW. The irradiation study endorses that the Al doped ZnO under investigation is a promising candidate photonic device applications such as all-optical power limiting.

  5. Characteristics of Al-doped ZnO films grown by atomic layer deposition for silicon nanowire photovoltaic device.

    PubMed

    Oh, Byeong-Yun; Han, Jin-Woo; Seo, Dae-Shik; Kim, Kwang-Young; Baek, Seong-Ho; Jang, Hwan Soo; Kim, Jae Hyun

    2012-07-01

    We report the structural, electrical, and optical characteristics of Al-doped ZnO (ZnO:Al) films deposited on glass by atomic layer deposition (ALD) with various Al2O3 film contents for use as transparent electrodes. Unlike films fabricated by a sputtering method, the diffraction peak position of the films deposited by ALD progressively moved to a higher angle with increasing Al2O3 film content. This indicates that Zn sites were effectively replaced by Al, due to layer-by-layer growth mechanism of ALD process which is based on alternate self-limiting surface chemical reactions. By adjusting the Al2O3 film content, a ZnO:Al film with low electrical resistivity (9.84 x 10(-4) Omega cm) was obtained at an Al2O3 film content of 3.17%, where the Al concentration, carrier mobility, optical transmittance, and bandgap energy were 2.8 wt%, 11.20 cm2 V(-1) s(-1), 94.23%, and 3.6 eV, respectively. Moreover, the estimated figure of merit value of our best sample was 8.2 m7Omega(-1). These results suggest that ZnO:Al films deposited by ALD could be useful for electronic devices in which especially require 3-dimensional conformal deposition of the transparent electrode and surface passivation.

  6. Electrical and optical properties of Al-doped ZnO and ZnAl2O4 films prepared by atomic layer deposition

    PubMed Central

    2013-01-01

    ZnO/Al2O3 multilayers were prepared by alternating atomic layer deposition (ALD) at 150°C using diethylzinc, trimethylaluminum, and water. The growth process, crystallinity, and electrical and optical properties of the multilayers were studied with a variety of the cycle ratios of ZnO and Al2O3 sublayers. Transparent conductive Al-doped ZnO films were prepared with the minimum resistivity of 2.4 × 10−3 Ω·cm at a low Al doping concentration of 2.26%. Photoluminescence spectroscopy in conjunction with X-ray diffraction analysis revealed that the thickness of ZnO sublayers plays an important role on the priority for selective crystallization of ZnAl2O4 and ZnO phases during high-temperature annealing ZnO/Al2O3 multilayers. It was found that pure ZnAl2O4 film was synthesized by annealing the specific composite film containing alternative monocycle of ZnO and Al2O3 sublayers, which could only be deposited precisely by utilizing ALD technology. PMID:23537274

  7. Ultraviolet band-pass Schottky barrier photodetectors formed by Al-doped ZnO contacts to n-GaN

    SciTech Connect

    Sheu, J.K.; Lee, M.L.; Tun, C.J.; Lin, S.W.

    2006-01-23

    This work prepared Al-doped ZnO(AZO) films using dc sputtering to form Schottky contacts onto GaN films with low-temperature-grown GaN cap layer. Application of ultraviolet photodetector showed that spectral responsivity exhibits a narrow bandpass characteristic ranging from 345 to 375 nm. Moreover, unbiased peak responsivity was estimated to be around 0.12 A/W at 365 nm, which corresponds to a quantum efficiency of around 40%. In our study, relatively low responsivity can be explained by the marked absorption of the AZO contact layer. When the reverse biases were below 5 V, the study revealed that dark currents were well below 5x10{sup -12} A even though the samples were annealed at increased temperatures.

  8. Interfacially Al-doped ZnO nanowires: greatly enhanced near band edge emission through suppressed electron-phonon coupling and confined optical field.

    PubMed

    Wu, Yiming; Dai, Yanmeng; Jiang, Shenlong; Ma, Chao; Lin, Yue; Du, Dongxue; Wu, Yukun; Ding, Huaiyi; Zhang, Qun; Pan, Nan; Wang, Xiaoping

    2017-04-05

    Aluminium (Al)-doped zinc oxide (ZnO) nanowires (NWs) with a unique core-shell structure and a Δ-doping profile at the interface were successfully grown using a combination of chemical vapor deposition re-growth and few-layer AlxOy atomic layer deposition. Unlike the conventional heavy doping which degrades the near-band-edge (NBE) luminescence and increases the electron-phonon coupling (EPC), it was found that there was an over 20-fold enhanced NBE emission and a notably-weakened EPC in this type of interfacially Al-doped ZnO NWs. Further experiments revealed a greatly suppressed nonradiative decay process and a much enhanced radiative recombination rate. By comparing the finite-difference time-domain simulation with the experimental results from intentionally designed different NWs, this enhanced radiative decay rate was attributed to the Purcell effect induced by the confined and intensified optical field within the interfacial layer. The ability to manipulate the confinement, transport and relaxation dynamics of ZnO excitons can be naturally guaranteed with this unique interfacial Δ-doping strategy, which is certainly desirable for the applications using ZnO-based nano-photonic and nano-optoelectronic devices.

  9. CdS/CdSe-sensitized solar cell based on Al-doped ZnO nanoparticles prepared by the decomposition of zinc acetate solid solution

    NASA Astrophysics Data System (ADS)

    Deng, Jianping; Wang, Minqiang; Ye, Wei; Fang, Junfei; Zhang, Pengchao; Yang, Yongping; Yang, Zhi

    2017-01-01

    In the study, Al-doped ZnO nanoparticles (Al-ZnO NPs) were prepared by the decomposition of zinc acetate solid solution. The X-ray diffraction results showed that Al3+ was successfully doped without the formation of Al and Al2O3 impurity phases. The less Al-doping did not change the hexagonal wurtzite crystal structure of ZnO. The ratio of Al to Al + Zn (9.05%) measured by the energy dispersive X-ray also confirmed the formation of Al-ZnO. The Al-ZnO NPs were used as the photoanode material to prepare CdS/CdSe-sensitized solar cell. Compared with the cell based on commercial ZnO NPs (C-ZnO), the short-circuit current density and the fill factor of the cell were increased from 5.8 mA/cm2 and 34.1% (C-ZnO) to 7.78 mA/cm2 and 48.7% (Al-ZnO), respectively. The cell efficiency was increased from 1.01% (C-ZnO) to (1.9%) (Al-ZnO) and the increase percentage reached 88.1%. The results of electrochemical impedance spectroscopy and open-circuit voltage-decay suggested the lower carrier transport resistance and the longer electron lifetime of Al-ZnO-based cell.

  10. Competition between (001) and (111) MgO thin film growth on Al-doped ZnO by oxygen plasma assisted pulsed laser deposition

    SciTech Connect

    Xiao, Bo; Yang, Qiguang; Walker, Brandon; Gonder, Casey A.; Romain, Gari C.; Mundle, Rajeh; Bahoura, Messaoud; Pradhan, A. K.

    2013-06-07

    We report on the study of epitaxial MgO thin films on (0001) Al-doped ZnO (Al: ZnO) underlayers, grown by oxygen plasma assisted pulsed laser deposition technique. A systematic investigation of the MgO thin films was performed by X-ray diffraction and atomic force microscopy, along with the current-voltage characteristics. A distinguished behavior was observed that the preferred MgO orientation changes from (111) to (001) in the films as the growth temperature increases. Two completely different in-plane epitaxial relationships were also determined from X-ray diffraction as: [110]MgO//[1120]Al: ZnO and [110]MgO//[1100]Al: ZnO for (001) MgO with 60 Degree-Sign rotated triplet domains, and [110]MgO//[1120]Al: ZnO for (111) MgO with 180 Degree-Sign rotated twin. The pronounced temperature dependence indicates a reconciliation of the nucleation driving forces among surface, interfacial, and strain energy for heteroepitaxy of cubic MgO on hexagonal Al: ZnO. The related interfacial atomic registry is considered to be important to the formation of unusual (001) MgO on hexagonal crystals. In addition, the electrical characterization revealed a dramatic reduction of the leakage current in (001) MgO thin films, whereas the small grain size of (111) MgO is identified by atomic force microscopy as a main cause of large leakage current.

  11. Structural, optical, morphological and electrical properties of undoped and Al-doped ZnO thin films prepared using sol—gel dip coating process

    NASA Astrophysics Data System (ADS)

    Boukhenoufa, N.; Mahamdi, R.; Rechem, D.

    2016-11-01

    In this work, sol—gel dip-coating technique was used to elaborate ZnO pure and ZnO/Al films. The impact of Al-doped concentration on the structural, optical, surface morphological and electrical properties of the elaborated samples was investigated. It was found that better electrical and optical performances have been obtained for an Al concentration equal to 5%, where the ZnO thin films exhibit a resistivity value equal to 1.64104 Ω·cm. Moreover, highest transparency has been recorded for the same Al concentration value. The obtained results from this investigation make the developed thin film structure a potential candidate for high optoelectronic performance applications.

  12. Effects of NIR annealing on the characteristics of al-doped ZnO thin films prepared by RF sputtering.

    PubMed

    Jun, Min-Chul; Koh, Jung-Hyuk

    2012-06-06

    Aluminum-doped zinc oxide (AZO) thin films have been deposited on glass substrates by employing radio frequency (RF) sputtering method for transparent conducting oxide applications. For the RF sputtering process, a ZnO:Al2O3 (2 wt.%) target was employed. In this paper, the effects of near infrared ray (NIR) annealing technique on the structural, optical, and electrical properties of the AZO thin films have been researched. Experimental results showed that NIR annealing affected the microstructure, electrical resistance, and optical transmittance of the AZO thin films. X-ray diffraction analysis revealed that all films have a hexagonal wurtzite crystal structure with the preferentially c-axis oriented normal to the substrate surface. Optical transmittance spectra of the AZO thin films exhibited transmittance higher than about 80% within the visible wavelength region, and the optical direct bandgap (Eg) of the AZO films was increased with increasing the NIR energy efficiency.

  13. Recombination luminescence and trap levels in undoped and Al-doped ZnO thin films on quartz and GaSe (0 0 0 1) substrates

    SciTech Connect

    Evtodiev, I.; Caraman, I.; Leontie, L.; Rusu, D.-I.; Dafinei, A.; Nedeff, V.; Lazar, G.

    2012-03-15

    Highlights: Black-Right-Pointing-Pointer ZnO films on GaSe create electron trapping states and PL recombination levels. Black-Right-Pointing-Pointer Zn and Al diffusion in GaSe produces low-energy widening of its PL emission. Black-Right-Pointing-Pointer ZnO:Al films on GaSe lamellas are suitable for gas-discharge lamp applications. -- Abstract: Photoluminescence spectra of ZnO and ZnO:Al (1.00, 2.00 and 5.00 at.%) films on GaSe (0 0 0 1) lamellas and amorphous quartz substrates, obtained by annealing, at 700 K, of undoped and Al-doped metal films, are investigated. For all samples, the nonequilibrium charge carriers recombine by radiative band-to-band transitions with energy of 3.27 eV, via recombination levels created by the monoionized oxygen atoms, forming the impurity band laying in the region 2.00 - 2.70 eV. Al doping induces an additional recombination level at 1.13 eV above the top of the valence band of ZnO films on GaSe substrates. As a result of thermal diffusion of Zn and Al into the GaSe interface layer from ZnO:Al/GaSe heterojunction, electron trap levels located at 0.22 eV and 0.26 eV below the conduction band edge of GaSe, as well as a deep recombination level, responsible for the luminescent emission in the region 1.10 - 1.40 eV, are created.

  14. Evolution of the electrical and structural properties during the growth of Al doped ZnO films by remote plasma-enhanced metalorganic chemical vapor deposition

    SciTech Connect

    Volintiru, I.; Creatore, M.; Kniknie, B. J.; Spee, C. I. M. A.; Sanden, M. C. M. van de

    2007-08-15

    Al-doped zinc oxide (AZO) films were deposited by means of remote plasma-enhanced metalorganic chemical vapor deposition from oxygen/diethylzinc/trimethylaluminum mixtures. The electrical, structural (crystallinity and morphology), and chemical properties of the deposited films were investigated using Hall, four point probe, x-ray diffraction (XRD), scanning electron microscopy (SEM), atomic force microscopy (AFM), electron recoil detection (ERD), Rutherford backscattering (RBS), and time of flight secondary ion mass spectrometry (TOF-SIMS), respectively. We found that the working pressure plays an important role in controlling the sheet resistance R{sub s} and roughness development during film growth. At 1.5 mbar the AZO films are highly conductive (R{sub s}<6 {omega}/{open_square} for a film thickness above 1200 nm) and very rough (>4% of the film thickness), however, they are characterized by a large sheet resistance gradient with increasing film thickness. By decreasing the pressure from 1.5 to 0.38 mbar, the gradient is significantly reduced and the films become smoother, but the sheet resistance increases (R{sub s}{approx_equal}100 {omega}/{open_square} for a film thickness of 1000 nm). The sheet resistance gradient and the surface roughness development correlate with the grain size evolution, as determined from the AFM and SEM analyses, indicating the transition from pyramid-like at 1.5 mbar to pillar-like growth mode at 0.38 mbar. The change in plasma chemistry/growth precursors caused by the variation in pressure leads to different concentration and activation efficiency of Al dopant in the zinc oxide films. On the basis of the experimental evidence, a valid route for further improving the conductivity of the AZO film is found, i.e., increasing the grain size at the initial stage of film growth.

  15. Significant Enhancement in the Conductivity of Al-Doped Zinc Oxide thin Films for TCO Application

    NASA Astrophysics Data System (ADS)

    Mohite, R. M.; Ansari, J. N.; Roy, A. S.; Kothawale, R. R.

    2016-03-01

    Nanostructured Al-doped Zinc oxide (ZnO) thin films were deposited on glass substrate by chemical bath deposition (CBD) using aqueous zinc nitrate solution and subjected for different characterizations. Effect of Al3+ substitution on the properties of ZnO annealed at 400∘C was studied by XRD and UV-Vis for structural studies, SEM and TEM for surface morphology and DC four probe resistivity measurements for electrical properties. Al3+ substitution does not influence the morphology and well-known peaks related to wurtzite structure of ZnO. Electron microscopy (SEM and TEM) confirms rod shaped Al-doped ZnO nanocrystals with average width of 50nm. The optical band gap determined by UV-Visible spectroscopy was found to be in the range 3.37eV to 3.44eV. An EPR spectrum of AZO reveals peak at g=1.96 is due to shallow donors Zn interstitial. The DC electrical resistivity measurements of Al-doped ZnO show a minimum resistivity of 3.77×10-2Ω-cm. Therefore, these samples have potential use in n-type window layer in optoelectronic devices, organic solar cells, photonic crystals, photo-detectors, light emitting diodes (LEDs), gas sensors and chemical sensors.

  16. Compositional study of vacuum annealed Al doped ZnO thin films obtained by RF magnetron sputtering

    SciTech Connect

    Shantheyanda, B. P.; Todi, V. O.; Sundaram, K. B.; Vijayakumar, A.; Oladeji, I.

    2011-09-15

    Aluminum doped zinc oxide (AZO) thin films were obtained by RF magnetron sputtering. The effects of deposition parameters such as power, gas flow conditions, and substrate heating have been studied. Deposited and annealed films were characterized for composition as well as microstructure using x ray photoelectron spectroscopy and x ray diffraction. Films produced were polycrystalline in nature. Surface imaging and roughness studies were carried out using SEM and AFM, respectively. Columnar grain growth was predominantly observed. Optical and electrical properties were evaluated for transparent conducting oxide applications. Processing conditions were optimized to obtain highly transparent AZO films with a low resistivity value of 6.67 x 10{sup -4}{Omega} cm.

  17. Effect of internal stress on the electro-optical behaviour of Al-doped ZnO transparent conductive thin films

    NASA Astrophysics Data System (ADS)

    Proost, J.; Henry, F.; Tuyaerts, R.; Michotte, S.

    2016-08-01

    In this work, we will report on scientific efforts aimed at unraveling the quantitative effect of elastic strain on the electro-optical behaviour of Al-doped zinc oxide (AZO). AZO thin films have been deposited by reactive magnetron sputtering to thicknesses from 300 to 500 nm, both on extra-clear glass substrates as well as on oxidised Si wafers. This resulted in both cases in polycrystalline, strongly textured (002) films. During deposition, the internal stress evolution in the growing film was monitored in-situ using high resolution curvature measurements. The resulting growth-induced elastic strain, which was found to depend heavily on the oxygen partial pressure, could further be modulated by appropriately choosing the deposition temperature. The latter also induces an additional extrinsic thermal stress component, whose sign depends on the substrate used. As such, a wide range of biaxial internal stresses could be achieved, from -600 MPa in compression up to 800 MPa in tension. The resulting charge carrier mobilities, obtained independently from room temperature Hall measurements, were found to range between 5 and 25 cm2/V s. Interestingly, the maximum mobility occurred at the zero-stress condition, and together with a charge carrier concentration of about 8 × 1020 cm-3, this gave rise to a resistivity of only 300 μΩ cm. From the stress-dependent optical transmission spectra in the range of 200-1000 nm, the pressure coefficient of the optical bandgap was estimated from the corresponding Tauc plots to be 31 meV/GPa, indicating a very high strain-sensitivity as well.

  18. In situ analyses on negative ions in the sputtering process to deposit Al-doped ZnO films

    SciTech Connect

    Tsukamoto, Naoki; Watanabe, Daisuke; Saito, Motoaki; Sato, Yasushi; Oka, Nobuto; Shigesato, Yuzo

    2010-07-15

    The origin of high energy negative ions during deposition of aluminum doped zinc oxide (AZO) films by dc magnetron sputtering of an AZO (Al{sub 2}O{sub 3}: 2.0 wt %) target was investigated by in situ analyses using the quadrupole mass spectrometer combined with the electrostatic energy analyzer. High energy negative oxygen (O{sup -}) ions which possessed the kinetic energy corresponding to the cathode sheath voltage were detected. The maximum flux of the O{sup -} ions was clearly observed at the location opposite to the erosion track area on the target. The flux of the O{sup -} ions changed hardly with increasing O{sub 2} flow ratio [O{sub 2}/(Ar+O{sub 2})] from 0% to 5%. The kinetic energy of the O{sup -} ions decreased with decreasing cathode sheath voltage from 403 to 337 V due to the enhancement of the vertical maximum magnetic field strength at the cathode surface from 0.025 to 0.100 T. The AZO films deposited with the lower O{sup -} bombardment energy showed the higher crystallinity and improved the electrical conductivity.

  19. Optical and structural properties of Al-doped ZnO thin films by sol gel process.

    PubMed

    Jun, Min-Chul; Koh, Jung-Hyuk

    2013-05-01

    Transparent conducting oxide (TCO) materials with high transmittance and good electrical conductivity have been attracted much attention due to the development of electronic display and devices such as organic light emitting diodes (OLEDs), and dye-sensitized solar cells (DSSCs). Aluminum doped zinc oxide thin films (AZO) have been well known for their use as TCO materials due to its stability, cost-effectiveness, good optical transmittance and electrical properties. Especially, AZO thin film, which have low resistivity of 2-4 x 10(-4) omega x cm which is similar to that of ITO films with wide band gap semiconductors. The AZO thin films were deposited on glass substrates by sol-gel spin-coating process. As a starting material, zinc acetate dihydrate (Zn(CH3COO)2 x 2H2O) and aluminum chloride hexahydrate (AlCl3 6H2O) were used. 2-methoxyethanol and monoethanolamine (MEA) were used as solvent and stabilizer, respectively. After deposited, the films were preheated at 300 degrees C on a hotplate and post-heated at 650 degrees C for 1.5 hrs in the furnace. We have studied the structural and optical properties as a function of Al concentration (0-2.5 mol.%).

  20. Microstructure and micromorphology of ZnO thin films: Case study on Al doping and annealing effects

    NASA Astrophysics Data System (ADS)

    Ţălu, Ştefan; Bramowicz, Miroslaw; Kulesza, Slawomir; Solaymani, Shahram; Ghaderi, Atefeh; Dejam, Laya; Elahi, Seyed Mohammad; Boochani, Arash

    2016-05-01

    The aim of this work is to investigate the three-dimensional (3-D) surface texture of Aliminium doped Zinc Oxide (AZO) thin films deposited by Radio Frequency sputtering method on the quartz substrates. Deposited samples were annealed under argon flux at three different temperatures: 400 °C, 500 °C, and 600 °C, followed by gradual cooling down to room temperature. To characterize the structure of samples X-ray diffraction (XRD) patterns and Rutherford Back Scattering (RBS) spectra were applied. The Scanning electron microscope (SEM) and the atomic force microscope (AFM) were applied to study the samples' surface morphology. Then statistical, fractal and functional surface characteristics were computed. The analysis of 3-D surface texture of AZO thin films is crucial to control the 3-D surface topography features and to correct interpretate the surface topographic parameters. It also allows understanding the relationship between 3-D the surface topography and the functional (physical, chemical and mechanical) properties of AZO thin films.

  1. Characteristics of Ga-Al doped ZnO thin films with plasma treatment prepared by using facing target sputtering method.

    PubMed

    Kim, Ki Hyun; Choi, Hyung Wook; Kim, Kyung Hwan

    2013-09-01

    Ga-Al-doped ZnO (GAZO) thin films were prepared on glass substrates using facing targets sputtering at room temperature. GAZO thin films have been treated in O2 plasma to modify surface roughness in order to enhance the efficiency of OLED anodes made from the films. After deposition of the thin films, the substrate was subjected to plasma surface treatment. The electrical, optical, and surface properties of the deposited thin films were investigated by hall-effect measurement, UV/Vis spectrometry, and atomic force microscopy (AFM), respectively. As a result of increasing the plasma treatment time from 0 to 45 sec, the surface roughness of films after plasma treatment was improved, but their electrical, optical, and structural properties were slightly changed. The lowest values of the surface roughness were 1.409 nm for the as-deposited GAZO thin films for an O2 plasma treatment time of 40 sec. All GAZO thin films have an average transmittance of 90% in the visible range (400-800 nm).

  2. Preparation of ZnO Photocatalyst for the Efficient and Rapid Photocatalytic Degradation of Azo Dyes

    NASA Astrophysics Data System (ADS)

    Chen, Xiaoqing; Wu, Zhansheng; Liu, Dandan; Gao, Zhenzhen

    2017-02-01

    Zinc oxide (ZnO) photocatalysts were synthesized by sol-gel method using zinc acetate as precursor for degradation of azo dyes under UV irradiation. The resultant samples were characterized by different techniques, such as XRD, SEM, and EDX. The influence of preparation conditions such as calcination temperature and composite ratio on the degradation of methyl orange (MO) was investigated. ZnO prepared with a composite ratio of 4:1 and calcination temperature of 400 °C exhibited 99.70% removal rate for MO. The effect of operation parameters on the degradation was also studied. Results showed that the removal rate of azo dyes increased with the increased dosage of catalyst and decreased initial concentration of azo dyes and the acidic condition is favorable for degradation. Furthermore, the kinetics and scavengers of the reactive species during the degradation were also investigated. It was found that the degradation of azo dyes fitted the first-order kinetics and superoxide ions were the main species. The proposed photocatalyst can efficiently and rapidly degrade azo dyes; thus, this economical and environment-friendly photocatalyst can be applied to the treatment of wastewater contaminated with synthetic dyes.

  3. Preparation of ZnO Photocatalyst for the Efficient and Rapid Photocatalytic Degradation of Azo Dyes.

    PubMed

    Chen, Xiaoqing; Wu, Zhansheng; Liu, Dandan; Gao, Zhenzhen

    2017-12-01

    Zinc oxide (ZnO) photocatalysts were synthesized by sol-gel method using zinc acetate as precursor for degradation of azo dyes under UV irradiation. The resultant samples were characterized by different techniques, such as XRD, SEM, and EDX. The influence of preparation conditions such as calcination temperature and composite ratio on the degradation of methyl orange (MO) was investigated. ZnO prepared with a composite ratio of 4:1 and calcination temperature of 400 °C exhibited 99.70% removal rate for MO. The effect of operation parameters on the degradation was also studied. Results showed that the removal rate of azo dyes increased with the increased dosage of catalyst and decreased initial concentration of azo dyes and the acidic condition is favorable for degradation. Furthermore, the kinetics and scavengers of the reactive species during the degradation were also investigated. It was found that the degradation of azo dyes fitted the first-order kinetics and superoxide ions were the main species. The proposed photocatalyst can efficiently and rapidly degrade azo dyes; thus, this economical and environment-friendly photocatalyst can be applied to the treatment of wastewater contaminated with synthetic dyes.

  4. The enhancement of oxygen sensitivity of ZnO macropore film by functionalizing with azo pigment.

    PubMed

    Peng, Liang; Zhai, Jiali; Wang, Dejun; Zhang, Yu; Zhao, Qidong; Wang, Ping; Pang, Shan; Fan, Zhiyong; Xie, Tengfeng

    2009-06-01

    Azo-ZnO hybrid films were prepared by functionalizing the ZnO macropore films with azo pigment (1,1'-(biphenyl-4,4'-diylbis(diazene-2,1-diyl))dinaphthalen-2-ol). Scanning electronic microscopy, current-voltage, UV-Vis absorption spectroscopy and Kelvin probe were used to characterize these films. The oxygen sensing characteristics of hybrid films and pure ZnO film were measured under the irradiation of UV light. The results show that the sensitivity of hybrid film is about 500 times higher than that of pure ZnO film. The high sensitivity to oxygen of hybrid films is mainly attributed to the increasing of the photo-generated electron concentration. Enhanced photo-induced charge separation after functionalization is confirmed by the pattern of transient photovoltage. Our results demonstrate that the functionalization with azo pigment is a promising approach to enhance the oxygen sensitivity of ZnO under the irradiation of UV light.

  5. Stable and high-quality Al-doped ZnO films with ICP-assisted facing targets sputtering at low temperature

    NASA Astrophysics Data System (ADS)

    Choi, Yoon S.; Kim, Hye R.; Han, Jeon G.

    2014-04-01

    FTS (facing targets sputtering) has been studied intensively for high-quality TCO films in low-temperature processes. In this study, we designed ICP-assisted FTS process for high-quality Al-doped ZnO film synthesis in a low temperature process. A one-turn ICP coil was installed a few cm above the upper target edge through which hydrogen was introduced and fully dissociated to the atomic radicals. The increase of ICP power caused heating and rarefaction of Ar gas and generated abundant hydrogen atoms and hydrogenated molecules. In FESEM analysis, the films synthesized with high ICP power showed high crystallinity. XPS was used to analyze the film structure. In O1s spectra, the low binding energy component located at ˜530.3 ± 0.4 eV corresponding to O2- ions on the wurtzite structure of the hexagonal Zn2+ ion array increased with the ICP power, indicating good crystal quality. With increasing ICP power fixing while fixing the RF power at the cathode, the resistivity was observed to decrease to 5 × 10-4 Ω-cm. For thermal reliability tests, films were stored in an air-based chamber at 200 °C. The films synthesized without ICP showed rapid degradation in the electrical properties, while the films synthesized with high ICP power showed good stabilities with little change in the electrical properties after 30 h of storage in an oven. By adding hydrogen, the carrier concentration of the films increased, while the mobility did not change much. From these results, it is expected that hydrogen was incorporated into the film as a stable n-dopant by using an auxiliary ICP plasma source.

  6. Sputtering deposition of Al-doped zinc oxide thin films using mixed powder targets

    NASA Astrophysics Data System (ADS)

    Ohshima, Tamiko; Maeda, Takashi; Tanaka, Yuki; Kawasaki, Hiroharu; Yagyu, Yoshihito; Ihara, Takeshi; Suda, Yoshiaki

    2016-01-01

    Sputtering deposition generally uses high-density bulk targets. Such a fabrication process has various problems including deterioration of the material during heating and difficulty in mixing a large number of materials in precise proportions. However, these problems can be solved by using a powder target. In this study, we prepared Al-doped ZnO (AZO) as transparent conductive thin films by radio-frequency magnetron sputtering with powder and bulk targets. Both the powder and bulk targets formed crystalline structures. The ZnO (002) peak was observed in the X-ray diffraction measurements. The mean transparency and resistivity of the films prepared with the powder target were 82% and 0.548 Ω · cm, respectively. The deposition rate with the powder target was lower than that with the bulk target.

  7. CdS nanoparticles sensitization of Al-doped ZnO nanorod array thin film with hydrogen treatment as an ITO/FTO-free photoanode for solar water splitting

    PubMed Central

    2012-01-01

    Aluminum-doped zinc oxide (AZO) nanorod array thin film with hydrogen treatment possesses the functions of transparent conducting oxide thin film and 1-D nanostructured semiconductor simultaneously. To enhance the absorption in the visible light region, it is sensitized by cadmium sulfide (CdS) nanoparticles which efficiently increase the absorption around 460 nm. The CdS nanoparticles-sensitized AZO nanorod array thin film with hydrogen treatment exhibits significantly improved photoelectrochemical property. After further heat treatment, a maximum short current density of 5.03 mA cm−2 is obtained under illumination. They not only are much higher than those without CdS nanoparticles sensitization and those without Al-doping and/or hydrogen treatment, but also comparable and even slightly superior to some earlier works for the CdS-sensitized zinc oxide nanorod array thin films with indium tin oxide (ITO) or fluorine-doped tin oxide (FTO) as substrates. This demonstrated successfully that the AZO nanorod array thin film with hydrogen treatment is quite suitable as an ITO/FTO-free photoanode and has great potentials in solar water splitting after sensitization by quantum dots capable of visible light absorption. PMID:23098050

  8. Ultra-violet absorption induced modifications in bulk and nanoscale electrical transport properties of Al-doped ZnO thin films

    NASA Astrophysics Data System (ADS)

    Kumar, Mohit; Basu, Tanmoy; Som, Tapobrata

    2015-08-01

    Using conductive atomic force microscopy and Kelvin probe force microscopy, we study local electrical transport properties in aluminum-doped zinc oxide (ZnO:Al or AZO) thin films. Current mapping shows a spatial variation in conductivity which corroborates well with the local mapping of donor concentration (˜1020 cm-3). In addition, a strong enhancement in the local current at grains is observed after exposing the film to ultra-violet (UV) light which is attributed to persistent photocurrent. Further, it is shown that UV absorption gives a smooth conduction in AZO film which in turn gives rise to an improvement in the bulk photoresponsivity of an n-AZO/p-Si heterojunction diode. This finding is in contrast to the belief that UV absorption in an AZO layer leads to an optical loss for the underneath absorbing layer of a heterojunction solar cell.

  9. Ultra-violet absorption induced modifications in bulk and nanoscale electrical transport properties of Al-doped ZnO thin films

    SciTech Connect

    Kumar, Mohit; Basu, Tanmoy; Som, Tapobrata

    2015-08-07

    Using conductive atomic force microscopy and Kelvin probe force microscopy, we study local electrical transport properties in aluminum-doped zinc oxide (ZnO:Al or AZO) thin films. Current mapping shows a spatial variation in conductivity which corroborates well with the local mapping of donor concentration (∼10{sup 20 }cm{sup −3}). In addition, a strong enhancement in the local current at grains is observed after exposing the film to ultra-violet (UV) light which is attributed to persistent photocurrent. Further, it is shown that UV absorption gives a smooth conduction in AZO film which in turn gives rise to an improvement in the bulk photoresponsivity of an n-AZO/p-Si heterojunction diode. This finding is in contrast to the belief that UV absorption in an AZO layer leads to an optical loss for the underneath absorbing layer of a heterojunction solar cell.

  10. High-Performance Polymer Solar Cells with PCE of 10.42% via Al-Doped ZnO Cathode Interlayer.

    PubMed

    Liu, Xiaohui; Li, Xiaodong; Li, Yaru; Song, Changjian; Zhu, Liping; Zhang, Wenjun; Wang, Hai-Qiao; Fang, Junfeng

    2016-09-01

    High-performance polymer solar cells incorporating a low-temperature-processed aluminum-doped zinc oxide (AZO) cathode interlayer are constructed with power conversion efficiency (PCE) of 10.42% based on PTB7-Th:PC71 BM blends (insensitive to the AZO thickness). Moreover, flexible devices on poly(ethylene terephthalate)/indium tin oxide substrates with PCE of 8.93% are also obtained, and welldistributed efficiency and good device stability are demonstrated as well.

  11. Improved conversion efficiency in dye-sensitized solar cells based on electrospun Al-doped ZnO nanofiber electrodes prepared by seed layer treatment

    SciTech Connect

    Yun Sining; Lim, Sangwoo

    2011-02-15

    The application of electrospun nanofibers in electronic devices is limited due to their poor adhesion to conductive substrates. To improve this, a seed layer (SD) is introduced on the FTO substrate before the deposition of the electrospun composite nanofibers. This facilitates the release of interfacial tensile stress during calcination and enhances the interfacial adhesion of the AZO nanofiber films with the FTO substrate. Dye-sensitized solar cells (DSSC) based on these AZO nanofiber photoelectrodes have been fabricated and investigated. An energy conversion efficiency ({eta}) of 0.54-0.55% has been obtained under irradiation of AM 1.5 simulated sunlight (100 mW/cm{sup 2}), indicating a massive improvement of {eta} in the AZO nanofiber film DSSCs after SD-treatment of the FTO substrate as compared to those with no treatment. The SD-treatment has been demonstrated to be a simple and facile method to solve the problem of poor adhesion between electrospun nanofibers and the conductive substrate. -- Graphical abstract: The poor adhesion between electrospun nanofibers and substrate is improved by a simple and facile seed layer (SD) treatment. The energy conversion efficiency of AZO nanofiber-based DSSCs has been greatly increased by SD-treatment of the FTO substrate. Display Omitted Research highlights: {yields} A simple and facile method (SD-treatment) has been demonstrated. {yields} The poor adhesion between electrospun nanofibers and substrate is improved by the SD-treatment. {yields} The {eta} of AZO nanofiber-based DSSCs has been greatly improved by SD-treatment of the FTO substrate.

  12. Enhance the light-harvesting capability of the ITO-free inverted small molecule solar cell by ZnO nanorods.

    PubMed

    Lin, Ming-Yi; Wu, Shang-Hsuan; Hsiao, Li-Jen; Budiawan, Widhya; Boopathi, Karunakara Moorthy; Tu, Wei-Chen; Chang, Yia-Chung; Chu, Chih-Wei

    2016-08-08

    The ITO-free inverted SMPV1:PC71BM solar cells with an Al doped ZnO (AZO) transparent electrodes are fabricated. The AZO thin film prepared by pulsed laser deposition (PLD) technique exhibits high transmission (>85%) and low sheet resistance (~30 Ω/sq) and the power conversion efficiency (PCE) of devices based on AZO electrode can reach around 4%. To further enhance the light harvesting of the absorption layer of solar cells, ZnO nanorods interlayer is grown on the AZO layer before the deposition the active layer. The absorption spectrums of devices under various conditions are also simulated by RCWA method to identify the optical saturation length of the ZnO nanorods. The PCE of ITO-free inverted small molecule solar cell improved with ZnO nanorods can reach 6.6%.

  13. Improved conversion efficiency of amorphous Si solar cells using a mesoporous ZnO pattern

    PubMed Central

    2014-01-01

    To provide a front transparent electrode for use in highly efficient hydrogenated amorphous silicon (a-Si:H) thin-film solar cells, porous flat layer and micro-patterns of zinc oxide (ZnO) nanoparticle (NP) layers were prepared through ultraviolet nanoimprint lithography (UV-NIL) and deposited on Al-doped ZnO (AZO) layers. Through this, it was found that a porous micro-pattern of ZnO NPs dispersed in resin can optimize the light-trapping pattern, with the efficiency of solar cells based on patterned or flat mesoporous ZnO layers increased by 27% and 12%, respectively. PMID:25276101

  14. Effect of annealing treatment on the structural and optical properties of AZO samples

    NASA Astrophysics Data System (ADS)

    Prepelita, P.; Craciun, V.; Garoi, F.; Staicu, A.

    2015-10-01

    AZO (2% Al doped ZnO) thin films, with thicknesses of 30 nm (AZO30), 50 nm (AZO50) and 400 nm (AZO400), deposited onto glass substrate by RF magnetron sputtering were subjected to annealing at a temperature of 700 K for a period of 90 min in air. As-deposited AZO30 and AZO50 samples were almost amorphous, with very small grains. After annealing, a crystallization process from amorphous to crystalline phase occurred. X-ray diffraction and scanning electron microscopy analyses showed a polycrystalline structure and a preferred orientation of the crystallites for the obtained thin films. Atomic force microscopy measurements indicated roughness values of 0.7 nm for AZO30, 1.4 nm for AZO50 and 18 nm for AZO400 annealed samples. Optical transmittance investigations of the layers in the 0.2-1.2 μm wavelength range showed a high transmission in the visible and near infrared range, as well as values between 3.36 and 3.45 eV for the optical bandgap. The present simple processing route is useful for device applications of transparent conductive oxides.

  15. Effect of Post Deposition Annealing Treatments on Properties of AZO Thin Films for Schottky Diode Applications.

    PubMed

    Singh, Shaivalini; Park, Si-Hyun

    2016-01-01

    High-quality aluminum (Al) doped ZnO (AZO) thin films were deposited on silicon substrates by RF sputtering at room temperature. The deposited films were annealed from the temperatures 350 °C to 650 °C in pure nitrogen (N₂) ambient. The effects of annealing on the microstructural, optical and electrical properties of the AZO films were investigated. A detailed analysis by X-ray diffraction (XRD), Scanning Electron Microscopy (SEM), Four Probe and Hall measurements was performed to study the properties of these AZO thin films. It was observed that all of the as-deposited and annealed AZO films have homogenous surfaces and hexagonal wurtzite structures with good crystalline quality. The study also suggested that there was an intermediate post annealing temperature (450 °C) at which the deposited ZnO film exhibit best surface characteristics. Pd/AZO Schottky devices were fabricated with 450 °C annealed AZO thin films and the parameters of Schottky devices were extracted from I-V characteristics. These results indicated that the Pd/AZO films were very much suitable for various optoelectronics applications particularly for metal semiconductor metal based UV detector application.

  16. Atomic layer deposition of Al-doped ZnO films using ozone as the oxygen source: A comparison of two methods to deliver aluminum

    SciTech Connect

    Yuan Hai; Luo Bing; Yu Dan; Cheng, An-jen; Campbell, Stephen A.; Gladfelter, Wayne L.

    2012-01-15

    Aluminum-doped ZnO films were prepared by atomic layer deposition at 250 deg. C using diethylzinc (DEZ), trimethylaluminum (TMA), and ozone as the precursors. Two deposition methods were compared to assess their impact on the composition, structural, electrical, and optical properties as a function of Al concentration. The first method controlled the Al concentration by changing the relative number of Al to Zn deposition cycles; a process reported in the literature where water was used as the oxygen source. The second method involved coinjection of the DEZ and TMA during each cycle where the partial pressures of the precursors control the aluminum concentration. Depth profiles of the film composition using Auger electron spectroscopy confirmed a layered microstructure for the films prepared by the first method, whereas the second method led to a homogeneous distribution of the aluminum throughout the ZnO film. Beneath the surface layer the carbon concentrations for all of the films were below the detection limit. Comparison of their electrical and optical properties established that films deposited by coinjection of the precursors were superior.

  17. Thermoelectric Properties of ZnO Ceramics Co-Doped with Al and Transition Metals

    NASA Astrophysics Data System (ADS)

    Yamaguchi, Hiroyuki; Chonan, Yasunori; Oda, Manabu; Komiyama, Takao; Aoyama, Takashi; Sugiyama, Shigeaki

    2011-05-01

    The effect of co-doping with transition metals (Fe, Ni, and Sm) on the thermoelectric properties of Al-doped ZnO (AZO) ceramics was studied. The electrical conductivity σ of AZO was significantly (12%) increased by Ni co-doping, while an unfavorable deterioration in σ was observed for Fe- or Sm-co-doped AZO. Hall-effect measurements indicated that the electron mobility of AZO decreased due to co-doping in all samples. Only the Ni-co-doped AZO sample showed significant enhancement in electron density, resulting in its black color. The thermal conductivity κ decreased drastically due to Ni or Sm co-doping of AZO, while only a small change was observed for Fe co-doping of AZO. The κ value at 1073 K for Ni-co-doped AZO was 77% of that for AZO. A dimensionless figure of merit ZT = 0.126 was attained at 1073 K for Ni-co-doped AZO, representing an improvement over that of conventional AZO by a factor of 1.50.

  18. Nonlinear optical parameters of nanocrystalline AZO thin film measured at different substrate temperatures

    NASA Astrophysics Data System (ADS)

    Jilani, Asim; Abdel-wahab, M. Sh; Al-ghamdi, Attieh A.; Dahlan, Ammar sadik; Yahia, I. S.

    2016-01-01

    The 2.2 wt% of aluminum (Al)-doped zinc oxide (AZO) transparent and preferential c-axis oriented thin films were prepared by using radio frequency (DC/RF) magnetron sputtering at different substrate temperature ranging from room temperature to 200 °C. For structural analysis, X-ray Diffraction (XRD) and Atomic Force Electron Microscope (AFM) was used for morphological studies. The optical parameters such as, optical energy gap, refractive index, extinction coefficient, dielectric loss, tangent loss, first and third order nonlinear optical properties of transparent films were investigated. High transmittance above 90% and highly homogeneous surface were observed in all samples. The substrate temperature plays an important role to get the best transparent conductive oxide thin films. The substrate temperature at 150 °C showed the growth of highly transparent AZO thin film. Energy gap increased with the increased in substrate temperature of Al doped thin films. Dielectric constant and loss were found to be photon energy dependent with substrate temperature. The change in substrate temperature of Al doped thin films also affect the non-liner optical properties of thin films. The value of χ(3) was found to be changed with the grain size of the thin films that directly affected by the substrate temperature of the pure and Al doped ZnO thin films.

  19. Photoresponse and photocapacitor properties of Au/AZO/p-Si/Al diode with AZO film prepared by pulsed laser deposition (PLD) method

    NASA Astrophysics Data System (ADS)

    Alyamani, A.; Tataroğlu, A.; El Mir, L.; Al-Ghamdi, Ahmed A.; Dahman, H.; Farooq, W. A.; Yakuphanoğlu, F.

    2016-04-01

    The electrical and photoresponse properties of Au/nanostructure AZO/p-Si/Al diode were investigated. Al-doped ZnO (AZO) thin films were deposited via pulsed laser deposition method on silicon substrate. Structural properties of the films were performed by using transmission electron microscopy and X-ray powder diffraction (XRD). The XRD patterns showed that the AZO films are polycrystalline with hexagonal wurtzite structure preferentially oriented in (002) direction. Electrical and photoresponse properties of the diode were analyzed under in a wide range of frequencies and illumination intensities. It is observed that the reverse current of the diode increases with increasing illumination intensity. This result confirms that the diode exhibits both photoconducting and photovoltaic behavior. Also, the transient photocurrent, photocapacitance and photoconductance measured as a function of time highly depend on transient illumination. In addition, the frequency dependence of capacitance and conductance is attributed to the presence of interface states.

  20. Highly transparent and reproducible nanocrystalline ZnO and AZO thin films grown by room temperature pulsed-laser deposition on flexible Zeonor plastic substrates

    NASA Astrophysics Data System (ADS)

    Inguva, Saikumar; Vijayaraghavan, Rajani K.; McGlynn, Enda; Mosnier, Jean-Paul

    2015-09-01

    Zeonor plastics are highly versatile due to exceptional optical and mechanical properties which make them the choice material in many novel applications. For potential use in flexible transparent optoelectronic applications, we have investigated Zeonor plastics as flexible substrates for the deposition of highly transparent ZnO and AZO thin films. Films were prepared by pulsed laser deposition at room temperature in oxygen ambient pressures of 75, 150 and 300 mTorr. The growth rate, surface morphology, hydrophobicity and the structural, optical and electrical properties of as-grown films with thicknesses ˜65-420 nm were recorded for the three oxygen pressures. The growth rates were found to be highly linear both as a function of film thickness and oxygen pressure, indicating high reproducibility. All the films were optically smooth, hydrophobic and nanostructured with lateral grain shapes of ˜150 nm wide. This was found compatible with the deposition of condensed nanoclusters, formed in the ablation plume, on a cold and amorphous substrate. Films were nanocrystalline (wurtzite structure), c-axis oriented, with average crystallite size ˜22 nm for ZnO and ˜16 nm for AZO. In-plane compressive stress values of 2-3 GPa for ZnO films and 0.5 GPa for AZO films were found. Films also displayed high transmission greater than 95% in some cases, in the 400-800 nm wavelength range. The low temperature photoluminescence spectra of all the ZnO and AZO films showed intense near band edge emission. A considerable spread from semi-insulating to n-type conductive was observed for the films, with resistivity ˜103 Ω cm and Hall mobility in 4-14 cm2 V-1 s-1 range, showing marked dependences on film thickness and oxygen pressure. Applications in the fields of microfluidic devices and flexible electronics for these ZnO and AZO films are suggested.

  1. Defect assisted saturable absorption characteristics in Al and Li doped ZnO thin films

    NASA Astrophysics Data System (ADS)

    K. M., Sandeep; Bhat, Shreesha; S. M., Dharmaprakash; P. S., Patil; Byrappa, K.

    2016-09-01

    The influence of different doping ratios of Al and Li on the nonlinear optical properties, namely, a two-photon absorption and a nonlinear refraction using single beam Z-scan technique, of nano-crystalline ZnO thin films has been investigated in the present study. A sol-gel spin-coated pure ZnO, Al-doped ZnO (AZO), and Li-doped ZnO (LZO) thin films have been prepared. The stoichiometric deviations induced by the occupancy of Al3+ and Li+ ions at the interstitial sites injects the compressive stress in the AZO and LZO thin films, respectively, while the extended defect states below the conduction band leads to a redshift of energy band gap in the corresponding films as compared to pure ZnO thin film. Switching from an induced absorption in ZnO and 1 at. wt. % doped AZO and LZO films to a saturable absorption (SA) in 2 at. wt. % doped AZO and LZO films has been observed, and it is attributed to the saturation of a linear absorption of the defect states. The closed aperture Z-scan technique revealed the self-focusing (a positive nonlinear refractive index) in all the films, which emerge out of the thermo-optical effects due to the continuous illumination of laser pulses. A higher third-order nonlinear optical susceptibility χ(3) of the order 10-3 esu has been observed in all the films.

  2. Preparation and Photovoltaic Properties of Dye Sensitized Solar Cells Using ZnO Nanorods Stacking Films on AZO Substrate as Photoanode.

    PubMed

    Xu, Yang; Wang, Xina; Liu, Rong; Wang, Hao

    2016-04-01

    Three-dimensional stacking of ZnO nanorods on conducting aluminum-doped ZnO (AZO) glass were studied as efficient photoanodes of dye sensitized solar cells (DSSCs). By changing hydrothermal growth time and cycle times, the thickness of ZnO nanorods stacking films varied from 30 µm to 64 µm, and its influence on the energetic conversion efficiency of the DSSCs based on the stacking films photoanodes was investigated. The loading density of N719 on the surface of ZnO nanorods was studied to increase the efficiency of the cells. Annealing experiments showed that the AZO substrates remained good conductors until heated above 350 °C. A photoelectric conversion efficiency as high as ~2.0% together with ISC of ~9.5 mA/cm2, VOC of ~0.5 V and FF of ~41.4% was achieved for the DSSC using 50 µm-thick film stacking by ZnO nanorods as photoanode and N719 as sensitizer under illumination of AM1.5G solar light (power density of 100 mW/cm2). A charge separation and transfer mechanism was proposed for the ZnO nanorods stacking electrode-based DSSCs.

  3. Optimizing performance of Cu2O/ZnO nanorods heterojunction based self-powered photodetector with ZnO seed layer

    NASA Astrophysics Data System (ADS)

    Wang, Chang; Xu, Jianping; Shi, Shaobo; Zhang, Yuzhu; Gao, Yanyan; Liu, Zeming; Zhang, Xuguang; Li, Lan

    2017-04-01

    The Cu2O films were electrodeposited on ZnO nanorod arrays (NRs) and the Cu2O/ZnO NRs heterojunctions were formed. The optical-electronic response of the heterojunctions was investigated. The diameter size and crystal quality of ZnO NRs were modified by the seed layer. ZnO NRs with good crystal quality were obtained on the 0.5% Al doped ZnO seed layer film (named as AZO (0.5%)). The devices based on the Cu2O/ZnO NRs heterojunction exhibit excellent stability and reproducibility of the self-powered photoresponse properties. The device with AZO (0.5%) seed layer demonstrates the high photoresponsivity of 60-70 mA/W in the violet and blue light with a fast response speed at zero applied bias.

  4. Role of substrate and annealing temperature on the structure of ZnO and AlxZn1-xO thin films for solar cell applications

    NASA Astrophysics Data System (ADS)

    Nambala, Fred Joe; Nel, Jacqueline M.; Machatine, Augusto G. J.; Mwakikunga, Bonex W.; Njoroge, Eric G.; Maabong, Kelebogile; Das, Arran G. M.; Diale, Mmantsae

    2016-01-01

    This paper reports on the deposition of pure and 5 at% Al doped ZnO (AZO) prepared by sol-gel and applied to the substrates by spin-coating, and the role of annealing temperature on the crystallinity of these layers. It is found that both ZnO and AZO are largely amorphous when coated on glass compared to n-Si(111), as substrates. On both substrates, X-ray diffraction (XRD) shows that the crystallinity improves as annealing temperature is raised from 200 to 600 °C with better crystallinity on Si substrates. The thickness of the films on substrates was determined as 120 nm by Rutherford backscattering spectroscopy (RBS). Specular ultra-violet visible (UV-vis) gives the direct transition optical band gaps (Eg) for AZO as-deposited films are 2.60 and 3.35 eV while that of 600 °C annealed films are 3.00 and 3.60 eV. The Eg calculated from diffuse reflectance spectroscopy (DRS) UV-vis are more diverse in ZnO- and AZO-Si than the ZnO- and AZO-glass samples, although in both sets the Eg tend to converge after annealing 600 °C. The Raman spectra of samples show multiphonon processes of higher order from the AZO and substrates. It is found that residual stresses are related to E2 Raman mode.

  5. Thermal durability of AZO/Ag(Al)/AZO transparent conductive films

    NASA Astrophysics Data System (ADS)

    Sugimoto, Yukiko; Igarashi, Kanae; Shirasaki, Shinya; Kikuchi, Akihiko

    2016-04-01

    Effects of Al doping on surface morphology, sheet resistance, optical transmission spectra, and thermal durability of a thin Ag layer and AZO/Ag/AZO dielectric/metal/dielectric (DMD) transparent conductive films (TCFs) were investigated. The 1.7 at. % Al doping suppressed the initial island growth of a thin Ag layer and the plasmon resonant absorption dip in the optical transmission spectra. The threshold thickness of percolation conductivity was reduced from 9-10 (pure Al layer) to 5-6 nm (1.7 at. % Al-doped Ag layer). Al doping in the Ag layer improved the thermal durability of AZO/Ag/AZO-DMD TCFs. The threshold temperature for Ag void formation increased from 400 °C (DMD with pure Ag layer) to 600 °C (DMD with a 10.5 at. % Al-doped Ag layer). The optimum annealing temperature increased from 300 °C (DMD with a pure Ag layer) to 500 °C (DMD with a 10.5 at. % Al-doped Ag layer). Maximum figures of merit (FOM) were 0.5 × 10-2 and 1.1 × 10-2 Ω-1 for the DMD with a pure Ag layer and that with a 10.5 at. % Al-doped Ag layer, respectively.

  6. Transparent conducting impurity-doped ZnO thin films prepared using oxide targets sintered by millimeter-wave heating

    SciTech Connect

    Minami, Tadatsugu; Okada, Kenji; Miyata, Toshihiro; Nomoto, Juni-chi; Hara, Youhei; Abe, Hiroshi

    2009-07-15

    The preparation of transparent conducting impurity-doped ZnO thin films by both pulsed laser deposition (PLD) and magnetron sputtering deposition (MSD) using impurity-doped ZnO targets sintered with a newly developed energy saving millimeter-wave (28 GHz) heating technique is described. Al-doped ZnO (AZO) and V-co-doped AZO (AZO:V) targets were prepared by sintering with various impurity contents for 30 min at a temperature of approximately 1250 degree sign C in an air or Ar gas atmosphere using the millimeter-wave heating technique. The resulting resistivity and its thickness dependence obtainable in thin films prepared by PLD using millimeter-wave-sintered AZO targets were comparable to those obtained in thin films prepared by PLD using conventional furnace-sintered AZO targets; a low resistivity on the order of 3x10{sup -4} {Omega} cm was obtained in AZO thin films prepared with an Al content [Al/(Al+Zn) atomic ratio] of 3.2 at. % and a thickness of 100 nm. In addition, the resulting resistivity and its spatial distribution on the substrate surface obtainable in thin films prepared by rf-MSD using a millimeter-wave-sintered AZO target were almost the same as those obtained in thin films prepared by rf-MSD using a conventional powder AZO target. Thin films prepared by PLD using millimeter-wave-sintered AZO:V targets exhibited an improved resistivity stability in a high humidity environment. Thin films deposited with a thickness of approximately 100 nm using an AZO:V target codoped with an Al content of 4 at. % and a V content [V/(V+Zn) atomic ratio] of 0.2 at. % were sufficiently stable when long-term tested in air at 90% relative humidity and 60 degree sign C.

  7. Enhanced performance of a-IGZO thin-film transistors by forming AZO/IGZO heterojunction source/drain contacts

    NASA Astrophysics Data System (ADS)

    Zou, Xiao; Fang, Guojia; Wan, Jiawei; Liu, Nishuang; Long, Hao; Wang, Haolin; Zhao, Xingzhong

    2011-05-01

    A low-cost Al-doped ZnO (AZO) thin film was deposited by radio-frequency magnetron sputtering with different Ar/O2 flow ratios. The optical and electrical properties of an AZO film were investigated. A highly conductive AZO film was inserted between the amorphous InGaZnO (a-IGZO) channel and the metal Al electrode to form a heterojunction source/drain contact, and bottom-gate amorphous a-IGZO thin-film transistors (TFTs) with a high κ HfON gate dielectric were fabricated. The AZO film reduced the source/drain contact resistivity down to 79 Ω cm. Enhanced device performance of a-IGZO TFT with Al/AZO bi-layer S/D electrodes (W/L = 500/40 µm) was achieved with a saturation mobility of 13.7 cm2 V-1 s-1, a threshold voltage of 0.6 V, an on-off current ratio of 4.7 × 106, and a subthreshold gate voltage swing of 0.25 V dec-1. It demonstrated the potential application of the AZO film as a promising S/D contact material for the fabrication of the high performance TFTs.

  8. Enhanced electrical properties and field emission characteristics of AZO/ZnO-nanowire core-shell structures.

    PubMed

    Huang, Jheng-Ming; Tsai, Shang-You; Ku, Ching-Shun; Lin, Chih-Ming; Chen, San-Yuan; Lee, Hsin-Yi

    2016-06-01

    The electrical properties and field-emission characteristics of ZnO nanowires (ZnO-NWs) fabricated using a vapor-liquid-solid method were systematically investigated. In particular, we explored the effects of Al-doped ZnO (AZO) films (thickness 4-100 nm) deposited on ZnO-NWs using an atomic layer deposition (ALD) method on the optoelectronic properties. The results show that the sheet resistance of net-like ZnO-NW structures can be significantly improved, specifically to become ∼1/1000 of the sheet resistance of the as-grown ZnO-NWs, attaining less than 10 Ω Sq(-1). The emission current density measured at the maximum field was roughly quadrupled relative to that of the as-grown ZnO-NWs. The data of the enhanced field-emission characteristics show that, with the ALD system, the AZO films of small resistance are readily coated on a structure with a high aspect ratio and the coating radius is controlled relative to the turn-on voltage and current density. The ultrathin AZO film from a one-monolayer coating process also significantly improved emission properties through modification of the effective work function at the AZO/ZnO-NW surface.

  9. Photoelectric and passivation properties of atomic layer deposited gradient AZO thin film

    NASA Astrophysics Data System (ADS)

    Zhao, Bin; Tang, Li-dan; Wang, Bing; Jia, Yi; Feng, Jia-heng

    2017-02-01

    Gradient Al-doped ZnO (AZO) thin films were deposited at 150 °C by atomic layer deposition (ALD) with different Al concentration gradient, and their photoelectric and passivation properties were investigated. With increasing Al concentration gradient from 0.09 to 1.21%/nm, Hall-effect showed that the resistivity of gradient AZO thin films deteriorates. The minimal resistivity (2.81 × 10-3 Ω cm), the maximum mobility (9.03 cm2/Vs) and the maximum carrier concentration (2.46 × 1020 cm-3) were obtained at 0.09%/nm Al concentration gradient. The average transmittance of all the gradient AZO films can be more than 85% in the visible region. In addition, gradient AZO thin films demonstrated excellent passivation properties. The maximum minority carrier lifetime (120.6 μs) and the minimal surface recombination velocity (≤208.3 cm/s) were obtained at 0.71%/nm Al concentration gradient.

  10. Fabrication and Characterization of Fully Transparent ZnO Thin-Film Transistors and Self-Switching Nano-Diodes

    NASA Astrophysics Data System (ADS)

    Sun, Y.; Ashida, K.; Sasaki, S.; Koyama, M.; Maemoto, T.; Sasa, S.; Kasai, S.; Iñiguez-de-la-Torre, I.; González, T.

    2015-10-01

    Fully transparent zinc oxide (ZnO) based thin-film transistors (TFTs) and a new type of rectifiers calls self-switching nano-diodes (SSDs) were fabricated on glass substrates at room temperature by using low resistivity and transparent conducting Al- doped ZnO (AZO) thin-films. The deposition conditions of AZO thin-films were optimized with pulsed laser deposition (PLD). AZO thin-films on glass substrates were characterized and the transparency of 80% and resistivity with 1.6*10-3 Ωcm were obtained of 50 nm thickness. Transparent ZnO-TFTs were fabricated on glass substrates by using AZO thin-films as electrodes. A ZnO-TFT with 2 μm long gate device exhibits a transconductance of 400 μS/mm and an ON/OFF ratio of 2.8*107. Transparent ZnO-SSDs were also fabricated by using ZnO based materials and clear diode-like characteristics were observed.

  11. Effect of the H2 plasma treatment of a seed layer on the synthesis of ZnO nanorods using a microwave hydrothermal method

    NASA Astrophysics Data System (ADS)

    Koo, Horng-Show; Lin, Ching-Cheng; Chen, Yao-Ju; Peng, Cheng-Hsiung; Chen, Mi

    2014-01-01

    The effect of H2 plasma treatment of a seed layer on the synthesis and characterization of zinc oxide (ZnO) nanorods is determined. Using an Al-doped ZnO (AZO) thin film as a seed layer, well-aligned ZnO nanorods are rapidly grown on an indium tin oxide (ITO)-coated glass substrate using a microwave hydrothermal method. The deposited AZO substrate was previously treated with H2 plasma. The effect of H2 plasma treatment of the seed layer on the alignment, growth rate, and crystallinity of the ZnO nanorods is determined. It is shown that the alignment and growth rate of the ZnO nanorods depend on the characteristics and roughness of the seed layer, which are improved by H2 plasma treatment. Various characterization methods such as X-ray diffraction (XRD), cathodoluminescence (CL), transmission electron microscopy (TEM), and X-ray photoemission spectroscopy (XPS) are used to determine the characteristic quality of the ZnO nanorods. A fundamental model of the effect of H2 plasma treatment on the seed layer and ZnO growth using a microwave hydrothermal process is also presented.

  12. Annealing effects on the optical and morphological properties of ZnO nanorods on AZO substrate by using aqueous solution method at low temperature.

    PubMed

    Hang, Da-Ren; Islam, Sk Emdadul; Sharma, Krishna Hari; Kuo, Shiao-Wei; Zhang, Cheng-Zu; Wang, Jun-Jie

    2014-01-01

    Vertically aligned ZnO nanorods (NRs) on aluminum-doped zinc oxide (AZO) substrates were fabricated by a single-step aqueous solution method at low temperature. In order to optimize optical quality, the effects of annealing on optical and structural properties were investigated by scanning electron microscopy, X-ray diffraction, photoluminescence (PL), and Raman spectroscopy. We found that the annealing temperature strongly affects both the near-band-edge (NBE) and visible (defect-related) emissions. The best characteristics have been obtained by employing annealing at 400°C in air for 2 h, bringing about a sharp and intense NBE emission. The defect-related recombinations were also suppressed effectively. However, the enhancement decreases with higher annealing temperature and prolonged annealing. PL study indicates that the NBE emission is dominated by radiative recombination associated with hydrogen donors. Thus, the enhancement of NBE is due to the activation of radiative recombinations associated with hydrogen donors. On the other hand, the reduction of visible emission is mainly attributed to the annihilation of OH groups. Our results provide insight to comprehend annealing effects and an effective way to improve optical properties of low-temperature-grown ZnO NRs for future facile device applications.

  13. Strong adsorption of Al-doped carbon nanotubes toward cisplatin

    NASA Astrophysics Data System (ADS)

    Li, Wei; Li, Guo-Qing; Lu, Xiao-Min; Ma, Juan-Juan; Zeng, Peng-Yu; He, Qin-Yu; Wang, Yin-Zhen

    2016-08-01

    The adsorption of cisplatin molecule on Al-doped CNTs is investigated using density functional theory. The obtained results indicate that Al-doped carbon nanotubes can strongly absorb cisplatin. After absorbing cisplatin, the symmetry of CNTs has some changes. We innovatively defined a parameter of symmetry variation which relates to the adsorption. By analyzing the electronic structure, it can be concluded that under the circumstance that cisplatin was absorbed by Al-doped CNTs through aluminum atom of Al-doped CNTs. In conclusion, Al-doped CNTs is a kind of potential delivery carrier with high quality for anticancer drug cisplatin.

  14. Si/ZnO nanorods/Ag/AZO structures as promising photovoltaic plasmonic cells

    NASA Astrophysics Data System (ADS)

    Placzek-Popko, E.; Gwozdz, K.; Gumienny, Z.; Zielony, E.; Pietruszka, R.; Witkowski, B. S.; Wachnicki, Ł.; Gieraltowska, S.; Godlewski, M.; Jacak, W.; Chang, Liann-Be

    2015-05-01

    The test structures for photovoltaic (PV) applications based on zinc oxide nanorods (NRs) that were grown using a low-temperature hydrothermal method on p-type silicon substrates (100) covered with Ag nanoparticles (NPs) were studied. The NPs of three different diameters, i.e., 5-10 nm, 20-30 nm, and 50-60 nm, were deposited using a sputtering method. The morphology and crystallinity of the structures were confirmed by scanning electron microscopy and Raman spectroscopy. It was found that the nanorods have a hexagonal wurtzite structure. An analysis of the Raman and photoluminescence spectra permitted the identification of the surface modes at 476 cm-1 and 561 cm-1. The presence of these modes is evidence of nanorods oriented along the wurtzite c-axis. The NRs with Ag NPs were covered with a ZnO:Al (AZO) layer that was grown using the low-temperature atomic layer deposition technique. The AZO layer served as a transparent ohmic contact to the ZnO nanorods. The applicability of the AZO layer for this purpose and the influence of the Ag nanoparticles on the effectiveness of light acquisition by such prepared PV cells were checked by reflectance and transmittance measurements of the AZO/glass and AZO/NPs/glass reference structures. Based on these studies, the high-energy transmittance edge was assigned to the ZnO energy gap, although it is blueshifted with respect to the bulk ZnO energy gap because of Al doping. It was also shown that the most optimal PV performance is obtained from a structure containing Ag nanoparticles with a diameter of 20-30 nm. This result is confirmed by the current-voltage measurements performed with 1-sun illumination. The structures show a plasmonic effect within the short wavelength range: the PV response for the structure with Ag nanoparticles is twice that of the structure without the nanoparticles. However, the influence of the Ag nanoparticle diameters on the plasmonic effect is ambiguous.

  15. Si/ZnO nanorods/Ag/AZO structures as promising photovoltaic plasmonic cells

    SciTech Connect

    Placzek-Popko, E. Gwozdz, K.; Gumienny, Z.; Zielony, E.; Jacak, W.; Pietruszka, R.; Witkowski, B. S.; Wachnicki, Ł.; Gieraltowska, S.; Chang, Liann-Be

    2015-05-21

    The test structures for photovoltaic (PV) applications based on zinc oxide nanorods (NRs) that were grown using a low-temperature hydrothermal method on p-type silicon substrates (100) covered with Ag nanoparticles (NPs) were studied. The NPs of three different diameters, i.e., 5–10 nm, 20-30 nm, and 50–60 nm, were deposited using a sputtering method. The morphology and crystallinity of the structures were confirmed by scanning electron microscopy and Raman spectroscopy. It was found that the nanorods have a hexagonal wurtzite structure. An analysis of the Raman and photoluminescence spectra permitted the identification of the surface modes at 476 cm{sup −1} and 561 cm{sup −1}. The presence of these modes is evidence of nanorods oriented along the wurtzite c-axis. The NRs with Ag NPs were covered with a ZnO:Al (AZO) layer that was grown using the low-temperature atomic layer deposition technique. The AZO layer served as a transparent ohmic contact to the ZnO nanorods. The applicability of the AZO layer for this purpose and the influence of the Ag nanoparticles on the effectiveness of light acquisition by such prepared PV cells were checked by reflectance and transmittance measurements of the AZO/glass and AZO/NPs/glass reference structures. Based on these studies, the high-energy transmittance edge was assigned to the ZnO energy gap, although it is blueshifted with respect to the bulk ZnO energy gap because of Al doping. It was also shown that the most optimal PV performance is obtained from a structure containing Ag nanoparticles with a diameter of 20–30 nm. This result is confirmed by the current-voltage measurements performed with 1-sun illumination. The structures show a plasmonic effect within the short wavelength range: the PV response for the structure with Ag nanoparticles is twice that of the structure without the nanoparticles. However, the influence of the Ag nanoparticle diameters on the plasmonic effect is ambiguous.

  16. Structure and electrical properties of Al-doped HfO₂ and ZrO₂ films grown via atomic layer deposition on Mo electrodes.

    PubMed

    Yoo, Yeon Woo; Jeon, Woojin; Lee, Woongkyu; An, Cheol Hyun; Kim, Seong Keun; Hwang, Cheol Seong

    2014-12-24

    The effects of Al doping in atomic-layer-deposited HfO2 (AHO) and ZrO2 (AZO) films on the evolutions of their crystallographic phases, grain sizes, and electric properties, such as their dielectric constants and leakage current densities, were examined for their applications in high-voltage devices. The film thickness and Al-doping concentration were varied in the ranges of 60-75 nm and 0.5-9.7%, respectively, for AHO and 55-90 nm and 1.0-10.3%, respectively, for AZO. The top and bottom electrodes were sputtered Mo films. The detailed structural and electrical property variations were examined as functions of the Al concentration and film thickness. The AHO films showed a transition from the monoclinic phase (Al concentration up to 1.4%) to the tetragonal/cubic phase (Al concentration 2.0-3.5%), and finally, to the amorphous phase (Al concentration >4.7%), whereas the AZO films remained in the tetragonal/cubic phase up to the Al concentration of 6.4%. For both the AHO and AZO films, the monoclinic and amorphous phases had dielectric constants of 20-25, and the tetragonal/cubic phases had dielectric constants of 30-35. The highest electrical performance levels for the application to the high-voltage charge storage capacitors in flat panel displays were achieved with the 4.7-9.7% Al-doped AHO films and the 2.6% Al-doped AZO films.

  17. The effect of deposition power on the electrical properties of Al-doped zinc oxide thin films

    SciTech Connect

    Chun, B. S.; Choi, Daniel S.; Wu, H. C.; Shvets, I. V.; Abid, M.; Chu, I. C.; Serrano-Guisan, S.

    2010-08-23

    We investigated the effect on the electronic properties of aluminum (Al)-zinc oxide (ZnO) films by modulating the radio frequency sputtering power. Our experimental results show that increasing the sputtering power increases the Al doping concentration, decreases the resistivity, and also shifts the Zn 2p and O 1s to higher binding energy states. Our local-density approximation (LDA) and LDA+U calculations show that the shift in higher binding energy and resistivity decrease are due to an enhancement of the O 2p-Zn 3d coupling and the modification of the Zn 4s-O 2p interaction in ZnO induced by Al doping.

  18. Comparison of carrier transport mechanism under UV/Vis illumination in an AZO photodetector and an AZO/p-Si heterojunction photodiode produced by spray pyrolysis

    SciTech Connect

    Shasti, M.; Mortezaali, A. Dariani, R. S.

    2015-01-14

    In this study, Aluminum doped Zinc Oxide (AZO) layer is deposited on p-type silicon (p-Si) by spray pyrolysis method to fabricate ultraviolet-visible (UV/Vis) photodetector as Al doping process can have positive effect on the photodetector performance. Morphology, crystalline structure, and Al concentration of AZO layer are investigated by SEM, XRD, and EDX. The goal of this study is to analyze the mechanism of carrier transport by means of current-voltage characteristics under UV/Vis illumination in two cases: (a) electrodes connected to the surface of AZO layer and (b) electrodes connected to cross section of heterojunction (AZO/p-Si). Measurements indicate that the AZO/p-Si photodiode exhibits a higher photocurrent and lower photoresponse time under visible illumination with respect to AZO photodetector; while under UV illumination, the above result is inversed. Besides, the internal junction field of AZO/p-Si heterojunction plays an important role on this mechanism.

  19. Enhancement of photoinduced electrical properties of Al-doped ZnO/BiFeO3 layered thin films prepared by chemical solution deposition

    NASA Astrophysics Data System (ADS)

    Katayama, Takeshi; Sakamoto, Wataru; Yuitoo, Isamu; Takeuchi, Teruaki; Hayashi, Koichiro; Yogo, Toshinobu

    2015-10-01

    Polycrystalline BiFeO3 and Al-doped ZnO/BiFeO3 bilayered thin films were prepared on Pt/TiOx/SiO2/Si substrates by chemical solution deposition. Their photoinduced electrical properties under blue light irradiation were characterized. The rapid on/off response of the photocurrent to light in unpoled BiFeO3 (BFO) and Al-doped ZnO/BiFeO3 (AZO/BFO) thin films was demonstrated. The AZO/BFO layered film exhibited an approximately triple-digit larger photocurrent in comparison with a BFO single-layer film. This is attributable to the photoexcited carrier generation effect at the interface between AZO (n-type) and BFO (p-type) films. Furthermore, in the AZO/BFO layered structure, the direction of the internal bias electric field caused by the space charge distribution in the unpoled BFO film is the same as that of the built-in electric field by forming a p-n junction of AZO and BFO layers. Photovoltaic properties were also improved by fabricating such a layered film. On the other hand, when the placement of BFO to AZO was reversed, the photoelectric current decreased to approximately one-tenth of that of the BFO single-layer film. In the BFO/AZO film, the internal electric field at the p-n junction between BFO and AZO is considered to have an orientation opposite to the self-bias field formed in the BFO film.

  20. Multi-wavelength Raman scattering of nanostructured Al-doped zinc oxide

    SciTech Connect

    Russo, V.; Ghidelli, M.; Gondoni, P.

    2014-02-21

    In this work we present a detailed Raman scattering investigation of zinc oxide and aluminum-doped zinc oxide (AZO) films characterized by a variety of nanoscale structures and morphologies and synthesized by pulsed laser deposition under different oxygen pressure conditions. The comparison of Raman spectra for pure ZnO and AZO films with similar morphology at the nano/mesoscale allows to investigate the relation between Raman features (peak or band positions, width, relative intensity) and material properties such as local structural order, stoichiometry, and doping. Moreover Raman measurements with three different excitation lines (532, 457, and 325 nm) point out a strong correlation between vibrational and electronic properties. This observation confirms the relevance of a multi-wavelength Raman investigation to obtain a complete structural characterization of advanced doped oxide materials.

  1. Low-Temperature All-Solution-Processed Transparent Silver Nanowire-Polymer/AZO Nanoparticles Composite Electrodes for Efficient ITO-Free Polymer Solar Cells.

    PubMed

    Zhang, Xiaoqin; Wu, Jiang; Wang, Jiantai; Yang, Qingqing; Zhang, Baohua; Xie, Zhiyuan

    2016-12-21

    We present a kind of all-solution-processed transparent conductive film comprising of silver nanowire (AgNW), polyvinyl butyral (PVB), and Al-doped ZnO nanoparticles (AZO NPs) composite (APA) by layer-by-layer blade-coating on glass substrate at low temperature. This kind of transparent APA film exhibits high transmittance at a wide range of 400-700 nm. The sheet resistance of the APA film can be as low as 21 Ω sq(-1) with transmittance over 94% at 550 nm. The introduction of PVB significantly improves the APA composite adhesion to glass substrate. The overlaid coating of AZO NPs not only reduces the sheet resistance but also improves the ambient and thermal stability of the APA film. This highly conductive and transparent APA film on glass substrate is employed as the bottom electrode to fabricate high-efficiency polymer solar cells (PSCs). A power conversion efficiency of 8.98% is achieved for the PBDTTT-EFT:PC71BM PSCs employing the APA composite as transparent bottom electrode, close to 9.54% of the control device fabricated on the commercial indium tin oxide substrate. As it can be easily prepared with all-solution-processed blade-coating method at low temperature, this kind of AgNW-based composite film is promising to integrate with roll-to-roll manufacturing of flexible PSCs.

  2. Aluminum doping tunes band gap energy level as well as oxidative stress-mediated cytotoxicity of ZnO nanoparticles in MCF-7 cells

    PubMed Central

    Akhtar, Mohd Javed; Alhadlaq, Hisham A.; Alshamsan, Aws; Majeed Khan, M.A.; Ahamed, Maqusood

    2015-01-01

    We investigated whether Aluminum (Al) doping tunes band gap energy level as well as selective cytotoxicity of ZnO nanoparticles in human breast cancer cells (MCF-7). Pure and Al-doped ZnO nanoparticles were prepared by a simple sol-gel method. Characterization study confirmed the formation of single phase of AlxZn1-xO nanocrystals with the size range of 33–55 nm. Al-doping increased the band gap energy of ZnO nanoparticles (from 3.51 eV for pure to 3.87 eV for Al-doped ZnO). Al-doping also enhanced the cytotoxicity and oxidative stress response of ZnO nanoparticles in MCF-7 cells. The IC50 for undoped ZnO nanoparticles was 44 μg/ml while for the Al-doped ZnO counterparts was 31 μg/ml. Up-regulation of apoptotic genes (e.g. p53, bax/bcl2 ratio, caspase-3 & caspase-9) along with loss of mitochondrial membrane potential suggested that Al-doped ZnO nanoparticles induced apoptosis in MCF-7 cells through mitochondrial pathway. Importantly, Al-doping did not change the benign nature of ZnO nanoparticles towards normal cells suggesting that Al-doping improves the selective cytotoxicity of ZnO nanoparticles toward MCF-7 cells without affecting the normal cells. Our results indicated a novel approach through which the inherent selective cytotoxicity of ZnO nanoparticles against cancer cells can be further improved. PMID:26347142

  3. Aluminum doping tunes band gap energy level as well as oxidative stress-mediated cytotoxicity of ZnO nanoparticles in MCF-7 cells.

    PubMed

    Akhtar, Mohd Javed; Alhadlaq, Hisham A; Alshamsan, Aws; Majeed Khan, M A; Ahamed, Maqusood

    2015-09-08

    We investigated whether Aluminum (Al) doping tunes band gap energy level as well as selective cytotoxicity of ZnO nanoparticles in human breast cancer cells (MCF-7). Pure and Al-doped ZnO nanoparticles were prepared by a simple sol-gel method. Characterization study confirmed the formation of single phase of Al(x)Zn(1-x)O nanocrystals with the size range of 33-55 nm. Al-doping increased the band gap energy of ZnO nanoparticles (from 3.51 eV for pure to 3.87 eV for Al-doped ZnO). Al-doping also enhanced the cytotoxicity and oxidative stress response of ZnO nanoparticles in MCF-7 cells. The IC50 for undoped ZnO nanoparticles was 44 μg/ml while for the Al-doped ZnO counterparts was 31 μg/ml. Up-regulation of apoptotic genes (e.g. p53, bax/bcl2 ratio, caspase-3 &caspase-9) along with loss of mitochondrial membrane potential suggested that Al-doped ZnO nanoparticles induced apoptosis in MCF-7 cells through mitochondrial pathway. Importantly, Al-doping did not change the benign nature of ZnO nanoparticles towards normal cells suggesting that Al-doping improves the selective cytotoxicity of ZnO nanoparticles toward MCF-7 cells without affecting the normal cells. Our results indicated a novel approach through which the inherent selective cytotoxicity of ZnO nanoparticles against cancer cells can be further improved.

  4. Aluminum doping tunes band gap energy level as well as oxidative stress-mediated cytotoxicity of ZnO nanoparticles in MCF-7 cells

    NASA Astrophysics Data System (ADS)

    Akhtar, Mohd Javed; Alhadlaq, Hisham A.; Alshamsan, Aws; Majeed Khan, M. A.; Ahamed, Maqusood

    2015-09-01

    We investigated whether Aluminum (Al) doping tunes band gap energy level as well as selective cytotoxicity of ZnO nanoparticles in human breast cancer cells (MCF-7). Pure and Al-doped ZnO nanoparticles were prepared by a simple sol-gel method. Characterization study confirmed the formation of single phase of AlxZn1-xO nanocrystals with the size range of 33-55 nm. Al-doping increased the band gap energy of ZnO nanoparticles (from 3.51 eV for pure to 3.87 eV for Al-doped ZnO). Al-doping also enhanced the cytotoxicity and oxidative stress response of ZnO nanoparticles in MCF-7 cells. The IC50 for undoped ZnO nanoparticles was 44 μg/ml while for the Al-doped ZnO counterparts was 31 μg/ml. Up-regulation of apoptotic genes (e.g. p53, bax/bcl2 ratio, caspase-3 & caspase-9) along with loss of mitochondrial membrane potential suggested that Al-doped ZnO nanoparticles induced apoptosis in MCF-7 cells through mitochondrial pathway. Importantly, Al-doping did not change the benign nature of ZnO nanoparticles towards normal cells suggesting that Al-doping improves the selective cytotoxicity of ZnO nanoparticles toward MCF-7 cells without affecting the normal cells. Our results indicated a novel approach through which the inherent selective cytotoxicity of ZnO nanoparticles against cancer cells can be further improved.

  5. Influence of RF power on magnetron sputtered AZO films

    SciTech Connect

    Agarwal, Mohit; Modi, Pankaj; Dusane, R. O.

    2013-02-05

    Al-doped Zinc Oxide (AZO) transparent conducting films are prepared on glass substrate by RF magnetron sputtering under different RF power with a 3 inch diameter target of 2 wt%Al{sub 2}O{sub 3} in zinc oxide. The effect of RF power on the structural, optical and electrical properties of AZO films was investigated by X-ray Diffraction (XRD), Hall measurement and UV-Visible spectrophotometry. The XRD data indicates a preferential c-axis orientation for all the films. All films exhibit high transmittance (<90%) in visible region. Films deposited at 60 W power exhibit lowest resistivity of 5.7 Multiplication-Sign 10{sup -4}{omega}cm. Such low-resistivity and high-transmittance AZO films when prepared using low RF power at room temperature could find important applications in flexible electronics.

  6. Enhanced electrical properties of AZO thin films grown on different substrates by using a facing-target sputtering system with hetero targets

    NASA Astrophysics Data System (ADS)

    Lee, ChangHyun; Bae, Kang; Jin, IkHyeon; Kim, HwaMin; Sohn, SunYoung

    2015-09-01

    Al-doped ZnO (AZO) films were deposited on glass, polyethylene naphthalate (PEN) and polyethylene terephthalate (PET) at room temperature by using conventional rf-magneton sputtering (CMS) and a facing-target sputtering (FTS) with hetero targets of Al2O3 and ZnO. Their structural, surface morphology, electrical and optical properties were characterized by using X-ray diffractometry (XRD), atomic force microscopy (AFM), Hall-effect measurement and ultravioletvisible spectrophotometry, respectively. The films exhibit highly c-axis preferred orientation and a closely packed nanocrystalline. Structure the FTS-films deposited on plastic substrate are found to receive much less stress due to bombardment of high-energy particles compress to the CMS-films deposited on plastic substrates, during the sputtering process, which can enhance the electrical properties and crystalline quality of the FTS-films compared with those of the CMS-films. The resistivities of the FTS-films are 6.50 × 10-4 Ω·cm on glass, 7.0 × 10-4 Ω·cm on PEN and 7.4 × 10-4 Ω·cm on PET while the values for the CMS-films are 7.6 × 10-4 Ω·cm on glass, 1.20 × 10-3 Ω·cm on PEN and 1.58 × 10-3 Ω·cm on PET.

  7. Pulsed laser deposition of ITO/AZO transparent contact layers for GaN LED applications.

    PubMed

    Ou, Sin Liang; Wuu, Dong Sing; Liu, Shu Ping; Fu, Yu Chuan; Huang, Shih Cheng; Horng, Ray Hua

    2011-08-15

    In this study, indium-tin oxide (ITO)/Al-doped zinc oxide (AZO) composite films were fabricated by pulsed laser deposition and used as transparent contact layers (TCLs) in GaN-based blue light emitting diodes (LEDs). The ITO/AZO TCLs were composed of the thin ITO (50 nm) films and AZO films with various thicknesses from 200 to 1000 nm. Conventional LED with ITO (200 nm) TCL prepared by E-beam evaporation was fabricated and characterized for comparison. From the transmittance spectra, the ITO/AZO films exhibited high transparency above 90% at wavelength of 465 nm. The sheet resistance of ITO/AZO TCL decreased as the AZO thickness increased, which could be attributed to the increase in a carrier concentration, leading to a decrease in the forward bias of LED. The LEDs with ITO/AZO composite TCLs showed better light extraction as compared to LED with ITO TCL in compliance with simulation. When an injection current of 20 mA was applied, the output power for LEDs fabricated with ITO/AZO TCLs had 45%, 63%, and 71% enhancement as compared with those fabricated using ITO (200 nm) TCL for the AZO thicknesses of 200, 460, and 1000 nm, respectively.

  8. New approach to biosensing of co-enzyme nicotinamide adenine dinucleotide (NADH) by incorporation of neutral red in aluminum doped nanostructured ZnO thin films.

    PubMed

    V T, Fidal; T S, Chandra

    2017-01-04

    Biosensing of NADH on bare electrodes has drawbacks such as high over-potential and poisoning during the oxidation reaction. To overcome this challenge a different approach has been undertaken by incorporating neutral red (NR) in Al doped ZnO (AZO) thin films using one-pot chemical bath deposition (CBD). The surface morphology of the films was hexagonal nanorods along the c-axis, perpendicular to the substrate. The thickness of the thin films were ranging from 400 to 3000nm varying dependent on time of deposition (30 to 150min). The average diameter of the nanorods was larger in the presence of neutral red (NR-AZO) with ~300nm in contrast to its absence (AZO) with ~200nm. The density of the packing of nanorods was dependent on the citrate concentration used during deposition. Control over the dopant concentration in the films was achieved by varying the area of Al foil used in the deposition solution. The selected area diffraction (SAED) and X-ray diffraction (XRD) indicated 002 plane of orientation in the nanorods. FTIR and FT-Raman analysis revealed conserved structure of NR and AZO. Chronoamperometric (CA) analysis showed a sensitivity of 0.45μAcm(-2)mM(-1) and LoD of 22μM within the range 0.075-4mM of NADH. The biological sensing of NADH was validated by physical adsorption of NAD(+) dependent-lactate dehydrogenase (LDH) on NR-AZO. CA showed sensitivity of 0.56μAcm(-2)mM(-1) and LoD for lactate was 27μM in the range of 0.1-1mM of lactate. Further validation with real-time serum sample shows that LDH/NR-AZO correlates with the clinical values. The distinction in this study is that the organic mediator like neutral red has been incorporated into the grain structure of the ZnO thin film whereas other study with the mediators have only attempted surface functionalization. This article is part of a Special Issue entitled "Recent Advances in Bionanomaterials" Guest Editor: Dr. Marie-Louise Saboungi and Dr. Samuel D. Bader.

  9. Preparation and photoelectrocatalytic activity of ZnO nanorods embedded in highly ordered TiO(2) nanotube arrays electrode for azo dye degradation.

    PubMed

    Zhang, Zhonghai; Yuan, Yuan; Liang, Linhong; Cheng, Yuxiao; Shi, Guoyue; Jin, Litong

    2008-10-30

    In this article, the ZnO nanorods embedded in highly ordered TiO(2) nanotube arrays (ZnO/TiO(2) NR/Ts) electrodes were fabricated through two steps: (1) electrosynthesis of TiO(2) nanotube arrays (TiO(2) NTs) in HF solution by anodization method; (2) followed by cathodic electrodeposition of ZnO embedded in the TiO(2) nanotube arrays. The morphological characteristics and structures of ZnO/TiO(2) NR/Ts electrodes were examined by field-emission scanning electron microscopy (FE-SEM), energy dispersive X-ray (EDX) spectroscopy, X-ray diffraction (XRD) analysis, and UV-vis spectra. The linear-sweep photovoltammetry response on the ZnO/TiO(2) NR/Ts electrode was presented and the photocurrent was dramatically enhanced on the ZnO/TiO(2) NR/Ts electrode, comparing with that on bare TiO(2) NTs electrode. The photocatalytic and photoelectrocatalytic activity of ZnO/TiO(2) NR/Ts electrode was evaluated in degradation of methyl orange (MO) in aqueous solution.

  10. Microstructures and thermochromic characteristics of VO2/AZO composite films

    NASA Astrophysics Data System (ADS)

    Xiao, Han; Li, Yi; Yuan, Wenrui; Fang, Baoying; Wang, Xiaohua; Hao, Rulong; Wu, Zhengyi; Xu, Tingting; Jiang, Wei; Chen, Peizu

    2016-05-01

    A vanadium dioxide (VO2) thin film was fabricated on a ZnO doped with Al (AZO) conductive glass by magnetron sputtering at room temperature followed by annealing under air atmosphere. The microstructures and optical properties of the thin film were studied. The results showed that the VO2/AZO composite film was poly-crystalline and the AZO layer did not change the preferred growth orientation of VO2. Compared to the VO2 film fabricated on soda-lime glass substrate through the same process and condition, the phase transition temperature of the VO2/AZO composite film was decreased by about 25 °C, thermal hysteresis width narrowed to 6 °C, the visible light transmittance was over 50%, the infrared transmittances before and after phase transition were 21% and 55%, respectively at 1500 nm.

  11. Al-doped MgB2 materials studied using electron paramagnetic resonance and Raman spectroscopy

    NASA Astrophysics Data System (ADS)

    Bateni, Ali; Erdem, Emre; Repp, Sergej; Weber, Stefan; Somer, Mehmet

    2016-05-01

    Undoped and aluminum (Al) doped magnesium diboride (MgB2) samples were synthesized using a high-temperature solid-state synthesis method. The microscopic defect structures of Al-doped MgB2 samples were systematically investigated using X-ray powder diffraction, Raman spectroscopy, and electron paramagnetic resonance. It was found that Mg-vacancies are responsible for defect-induced peculiarities in MgB2. Above a certain level of Al doping, enhanced conductive properties of MgB2 disappear due to filling of vacancies or trapping of Al in Mg-related vacancy sites.

  12. Bi-layer Channel AZO/ZnO Thin Film Transistors Fabricated by Atomic Layer Deposition Technique.

    PubMed

    Li, Huijin; Han, Dedong; Liu, Liqiao; Dong, Junchen; Cui, Guodong; Zhang, Shengdong; Zhang, Xing; Wang, Yi

    2017-12-01

    This letter demonstrates bi-layer channel Al-doped ZnO/ZnO thin film transistors (AZO/ZnO TFTs) via atomic layer deposition process at a relatively low temperature. The effects of annealing in oxygen atmosphere at different temperatures have also been investigated. The ALD bi-layer channel AZO/ZnO TFTs annealed in dry O2 at 300 °C exhibit a low leakage current of 2.5 × 10(-13)A, I on/I off ratio of 1.4 × 10(7), subthreshold swing (SS) of 0.23 V/decade, and high transmittance. The enhanced performance obtained from the bi-layer channel AZO/ZnO TFT devices is explained by the inserted AZO front channel layer playing the role of the mobility booster.

  13. Al-doped zinc oxide nanocomposites with enhanced thermoelectric properties.

    PubMed

    Jood, Priyanka; Mehta, Rutvik J; Zhang, Yanliang; Peleckis, Germanas; Wang, Xiaolin; Siegel, Richard W; Borca-Tasciuc, Theo; Dou, Shi Xue; Ramanath, Ganpati

    2011-10-12

    ZnO is a promising high figure-of-merit (ZT) thermoelectric material for power harvesting from heat due to its high melting point, high electrical conductivity σ, and Seebeck coefficient α, but its practical use is limited by a high lattice thermal conductivity κ(L). Here, we report Al-containing ZnO nanocomposites with up to a factor of 20 lower κ(L) than non-nanostructured ZnO, while retaining bulklike α and σ. We show that enhanced phonon scattering promoted by Al-induced grain refinement and ZnAl(2)O(4) nanoprecipitates presages ultralow κ ∼ 2 Wm( -1) K(-1) at 1000 K. The high α∼ -300 μV K(-1) and high σ ∼ 1-10(4) Ω(-1 )m(-1) result from an offsetting of the nanostructuring-induced mobility decrease by high, and nondegenerate, carrier concentrations obtained via excitation from shallow Al donor states. The resultant ZT ∼ 0.44 at 1000 K is 50% higher than that for the best non-nanostructured counterpart material at the same temperature and holds promise for engineering advanced oxide-based high-ZT thermoelectrics for applications.

  14. Fundamental understanding of the growth, doping and characterization of aligned ZnO nanowires

    NASA Astrophysics Data System (ADS)

    Shen, Gang

    Zinc oxide (ZnO) is a II-VI semiconductor whose wide direct bandgap (3.37 eV) and large exciton binding energy (60 meV) make it compelling for optoelectronic devices such as light emitting diodes, lasers, photodetectors, solar cells, and mechanical energy harvesting devices. One dimensional structures of ZnO (nanowires) have become significant due to their unique physical properties arising from quantum confinement, and they are ideal for studying transport mechanisms in one-dimensional systems. In this doctoral research work, ZnO nanowire (NW) arrays were synthesized on sapphire substrates through carbo-thermal reduction of ZnO powders, and the effects of growth parameters on the properties of ZnO NW arrays were studied by scanning and transmission electron microscopy, X-ray diffraction, photoluminescence and Raman spectroscopy. Based on the phonon mode selection rules in wurtzite ZnO, confocal Raman spectroscopy was used to assess the alignment of ZnO NWs in an array, thereby complementing X-ray diffraction. Al doped ZnO NW arrays were achieved by mixing Al powder into the ZnO and graphite source mixture, and the presence of Al was confirmed by Energy-dispersive X-ray spectroscopy. The incorporation of Al had the effects of lowering the electrical resistivity, slightly deteriorating crystal quality and suppressing defect related green emission. Two models of ZnO NW growth were developed by establishing the relationship between NW length and diameter for undoped and Al doped ZnO NWs separately. The growth of undoped ZnO NWs followed the diffusion-induced model which was characterized by thin wires being longer than thick wires, while the growth of Al doped ZnO was controlled by Gibbs-Thomson effect which was characterized by thin wires being shorter than thin wires. Local electrode atom probe analysis of ZnO NWs was carried out to study the crystal stoichiometry and Al incorporation. Undoped ZnO NWs were found to be high purity with no detectable impurities

  15. Microstructure evolution of Al-doped zinc oxide and Sn-doped indium oxide deposited by radio-frequency magnetron sputtering: A comparison

    SciTech Connect

    Nie, Man; Bikowski, Andre; Ellmer, Klaus

    2015-04-21

    The microstructure and morphology evolution of Al-doped zinc oxide (AZO) and Sn-doped indium oxide (ITO) thin films on borosilicate glass substrates deposited by radio-frequency magnetron sputtering at room temperature (RT) and 300 °C were investigated by X-ray diffraction and atomic force microscopy (AFM). One-dimensional power spectral density (1DPSD) functions derived from the AFM profiles, which can be used to distinguish different growth mechanisms, were used to compare the microstructure scaling behavior of the thin films. The rms roughness R{sub q} evolves with film thickness as a power law, R{sub q} ∼ d{sub f}{sup β}, and different growth exponents β were found for AZO and ITO films. For AZO films, β of 1.47 and 0.56 are obtained for RT and 300 °C depositions, respectively, which are caused by the high compressive stress in the film at RT and relaxation of the stress at 300 °C. While for ITO films, β{sub 1} = 0.14 and β{sub 2} = 0.64 for RT, and β{sub 1} = 0.89 and β{sub 2} = 0.3 for 300 °C deposition are obtained, respectively, which is related to the strong competition between the surface diffusion and shadowing effect and/or grain growth. Electrical properties of both materials as a function of film thickness were also compared. By the modified Fuchs-Sondheimer model fitting of the electrical transport in both materials, different nucleation states are pointed out for both types of films.

  16. ZnO:Al Doping Level and Hydrogen Growth Ambient Effects on CIGS Solar Cell Performance: Preprint

    SciTech Connect

    Duenow, J. N.; Gessert, T. A.; Wood, D. M.; Egaas, B.; Noufi, R.; Coutts,T. J.

    2008-05-01

    Cu(In,Ga)Se2 (CIGS) photovoltaic (PV) cells require a highly conducting and transparent electrode for optimum device performance. ZnO:Al films grown from targets containing 2.0 wt.% Al2O3 are commonly used for this purpose. Maximum carrier mobilities of these films grown at room temperature are ~20-25 cm2V-1s-1. Therefore, relatively high carrier concentrations are required to achieve the desired conductivity, which leads to free carrier absorption in the near infrared (IR). Lightly doped films (0.05 - 0.2 wt.% Al2O3), which show less IR absorption, reach mobility values greater than 50 cm2V-1s-1 when deposited in H2 partial pressure. We incorporate these lightly doped ZnO:Al layers into CIGS PV cells produced at the National Renewable Energy Laboratory (NREL). Preliminary results show quantum efficiency values of these cells rival those of a past world-record cell produced at NREL that used 2.0 wt.% Al-doped ZnO films. The highest cell efficiency obtained in this trial was 18.1%.

  17. Preparation, structural and optical characterization of ZnO, ZnO: Al nanopowder

    SciTech Connect

    Mohan, R. Raj; Rajendran, K.; Sambath, K.

    2014-01-28

    In this paper, ZnO and ZnO:Al nanopowders have been synthesized by low cost hydrothermal method. Zinc nitrate, hexamethylenetetramine (HMT) and aluminium nitrate are used as precursors for ZnO and AZO with different molar ratios. The structural and optical characterization of doped and un-doped ZnO powders have been investigated by X-ray diffraction (XRD), Scanning electron microscopy (SEM), Energy dispersive X-ray spectroscopy (EDAX), photoluminescence (PL) and ultra violet visible (UV-Vis) absorption studies. The SEM results show that the hydrothermal synthesis can be used to obtain nanoparticles with different morphology. It is observed that the grain size of the AZO nanoparticles increased with increasing of Al concentration. The PL measurement of AZO shows that broad range of green emission around 550nm with high intensity. The green emission resulted mainly because of intrinsic defects.

  18. Preparation, structural and optical characterization of ZnO, ZnO: Al nanopowder

    NASA Astrophysics Data System (ADS)

    Mohan, R. Raj; Rajendran, K.; Sambath, K.

    2014-01-01

    In this paper, ZnO and ZnO:Al nanopowders have been synthesized by low cost hydrothermal method. Zinc nitrate, hexamethylenetetramine (HMT) and aluminium nitrate are used as precursors for ZnO and AZO with different molar ratios. The structural and optical characterization of doped and un-doped ZnO powders have been investigated by X-ray diffraction (XRD), Scanning electron microscopy (SEM), Energy dispersive X-ray spectroscopy (EDAX), photoluminescence (PL) and ultra violet visible (UV-Vis) absorption studies. The SEM results show that the hydrothermal synthesis can be used to obtain nanoparticles with different morphology. It is observed that the grain size of the AZO nanoparticles increased with increasing of Al concentration. The PL measurement of AZO shows that broad range of green emission around 550nm with high intensity. The green emission resulted mainly because of intrinsic defects.

  19. Thermoelectric properties of Al doped Mg{sub 2}Si material

    SciTech Connect

    Kaur, Kulwinder Kumar, Ranjan; Rani, Anita

    2015-08-28

    In the present paper we have calculated thermoelectric properties of Al doped Mg{sub 2}Si material (Mg{sub 2−x}Al{sub x}Si, x=0.06) using Pseudo potential plane wave method based on DFT and Semi classical Boltzmann theory. The calculations showed n-type conduction, indicating that the electrical conduction are due to electron. The electrical conductivity increasing with increasing temperature and the negative value of Seebeck Coefficient also show that the conduction is due to electron. The thermal conductivity was increased slightly by Al doping with increasing temperature due to the much larger contribution of lattice thermal conductivity over electronic thermal conductivity.

  20. Mechanical and optical characteristics of Al-doped C 60 films

    NASA Astrophysics Data System (ADS)

    Nishinaga, Jiro; Aihara, Tomoyuki; Yamagata, Hiroshi; Horikoshi, Yoshiji

    2005-05-01

    Al-doped C 60 films are grown on GaAs and quartz glass substrates by solid source molecular beam epitaxy. Mechanical and optical properties of the films are investigated by Vickers hardness test, absorption and reflectance spectra, and photoluminescence measurements. Vickers hardness of 250 HV is confirmed for the Al-doped C 60 films with the molecular ratio of Al to C 60 of 30, and the Al-doped C 60 films are found to be undissolved in organic solvents. The absorption spectra of pure C 60 films show some peaks caused by the electron transition among the C 60 molecular orbitals. These absorption peaks become less pronounced in Al-doped C 60 films, probably due to Al incorporation in C 60 matrix. In addition, new photoluminescence peaks appear around 1.75, 1.85 and 1.95 eV. The energy of 1.95 eV coincides well with the energy difference between HOMO and LUMO states. These results suggest that the parity forbidden transition is relieved by the molecular distortion due to the Al-C 60 bonding.

  1. The physical properties of AZO films deposited by RF magnetron sputtering in hydrogen-diluted argon

    NASA Astrophysics Data System (ADS)

    Kim, Jwayeon; Han, Jungsu; Jin, Hyunjoon; Kim, Youhyuk; Park, Kyeongsoon

    2014-08-01

    The properties of AZO (98-wt% ZnO, 2-wt% Al2O3) films produced in pure Ar and Ar (98%) + H2 (2%) (H2-diluted Ar) by radio-frequency (RF) magnetron sputtering were investigated as functions of the substrate temperatures. H2-diluted Ar improved the electrical properties of the AZO films fabricated at low substrate temperatures, but this benefit gradually diminished with increasing substrate temperature. This phenomenon was explained by O-H stretching in the Zn-O bond at low temperatures and by the formation of oxygen vacancies at high temperatures. The average optical transmission was over ~85%, and the orientation of the AZO films deposited both in pure Ar and in H2-diluted Ar was in the [002] direction.

  2. Characteristics of AZO electrode with high transmittance in near infrared range.

    PubMed

    Lee, Young-Jun; Kim, Joo-Hyung; Park, Jae-Cheol; Kim, Young-Ho; Jung, Dongsoo; Kim, Tae-Won

    2014-12-01

    We studied Al2O3-doped ZnO (AZO) thin film as a transparent conducting layer for photovoltaic cell operated in wide range of solar spectrum. Effects of substrate temperature on the optical, structural, and electrical properties of thin AZO film were investigated. AZO films were deposited on glass substrates by RF magnetron sputtering system using a 2 wt.% Al2O3 doped target at different temperature conditions. The grown AZO films at low deposition temperatures ranged from 100 degrees C to 300 degrees C show relatively low resistivity, while the samples deposited at 400 degrees C or room temperature are with higher resistivity of -8 x 10(-4) Ω x cm. The measurement by atomic force microscopy reveals that all AZO films possess very smooth surface morphologies with RMS values below 1 nm regardless of substrate temperature. Optical transmittance of the AZO films increases from 81% to 95% as the substrate temperature increases. The AZO films deposited at 200 degrees C condition shows the optimum value of figure-of-merit of 43.7 x 10(-3) Ω(-1), showing the resistivity of 3.4 x 10(-4) Ω x cm and the transmittance of 94%. Additionally, it is noted that the transmittance of the films at near infrared wavelength of 1250 nm exceeds 90%, demonstrating the feasibility as a transparent electrode for thin film solar cell with narrow band gap.

  3. Engineering the switching dynamics of TiOx-based RRAM with Al doping

    NASA Astrophysics Data System (ADS)

    Trapatseli, Maria; Khiat, Ali; Cortese, Simone; Serb, Alexantrou; Carta, Daniela; Prodromakis, Themistoklis

    2016-07-01

    Titanium oxide (TiOx) has attracted a lot of attention as an active material for resistive random access memory (RRAM), due to its versatility and variety of possible crystal phases. Although existing RRAM materials have demonstrated impressive characteristics, like ultra-fast switching and high cycling endurance, this technology still encounters challenges like low yields, large variability of switching characteristics, and ultimately device failure. Electroforming has been often considered responsible for introducing irreversible damage to devices, with high switching voltages contributing to device degradation. In this paper, we have employed Al doping for tuning the resistive switching characteristics of titanium oxide RRAM. The resistive switching threshold voltages of undoped and Al-doped TiOx thin films were first assessed by conductive atomic force microscopy. The thin films were then transferred in RRAM devices and tested with voltage pulse sweeping, demonstrating that the Al-doped devices could on average form at lower potentials compared to the undoped ones and could support both analog and binary switching at potentials as low as 0.9 V. This work demonstrates a potential pathway for implementing low-power RRAM systems.

  4. A first principles study of pristine and Al-doped boron nitride nanotubes interacting with platinum-based anticancer drugs

    NASA Astrophysics Data System (ADS)

    Shakerzadeh, Ehsan; Noorizadeh, Siamak

    2014-03-01

    Interaction of cis-platin and neda-platin, two conventional platinum-based anticancer drugs, with pristine [8,8] and Al-doped [8,0] boron nitride nanotubes (BNNTs) are investigated using the density functional theory (DFT) method. The obtained results indicate that cis-platin and neda-platin weakly interact with pristine zig zag or armchair BNNTs with a little dependency on the adsorbing positions; while both cis-platin and neda-platin are preferentially adsorbed onto the Al atom of the Al-doped BNNT with considerable adsorption energies. Therefore the Al-doped-BNNT might be an efficient carrier for delivery of these drugs in nanomedicine domain. The electronic structures of the stable configurations are also investigated through both DOS and PDOS spectra. The obtained results introduce the Al-doped-BNNT as an efficient carrier for delivery of cis-platin and neda-platin in nanomedicine domain.

  5. Effect of aluminium doping on structural and optical properties of ZnO thin films by sol-gel method

    SciTech Connect

    Vijayaprasath, G.; Murugan, R.; Ravi, G. E-mail: gravicrc@gmail.com; Hayakawa, Y.

    2015-06-24

    We systematically investigated the structural, morphological and optical properties of 0.05 mol % Al doped ZnO (Al:ZnO) thin films deposited on glass substrates by sol-gel spin coating method. The influences of Al doping in ZnO thin films are characterized by Powder X-ray diffraction study. ZnO and Al:ZnO thin films have showed hexagonal wurtzite structure without any secondary phase in c-axis (002) orientation. The SEM images also proved the hexagonal rod like morphologies for both films. All the films exhibited transmittance of 70-80% in the visible range up to 800 nm and cut-off wavelength observed at ∼390 nm corresponding to the fundamental absorption of ZnO. The band gap of the ZnO thin films slightly widened with the Al doping. The photoluminescence properties have been studied for Al: ZnO thin films and the results are presented in detail.

  6. 40 CFR 721.9538 - Lithium salt of sulfophenyl azo phenyl azo disulfostilbene (generic).

    Code of Federal Regulations, 2011 CFR

    2011-07-01

    ... 40 Protection of Environment 31 2011-07-01 2011-07-01 false Lithium salt of sulfophenyl azo phenyl... Significant New Uses for Specific Chemical Substances § 721.9538 Lithium salt of sulfophenyl azo phenyl azo... substance identified generically as lithium salt of sulfophenyl azo phenyl azo disulfostilbene (PMN...

  7. 40 CFR 721.9538 - Lithium salt of sulfophenyl azo phenyl azo disulfostilbene (generic).

    Code of Federal Regulations, 2010 CFR

    2010-07-01

    ... 40 Protection of Environment 30 2010-07-01 2010-07-01 false Lithium salt of sulfophenyl azo phenyl... Significant New Uses for Specific Chemical Substances § 721.9538 Lithium salt of sulfophenyl azo phenyl azo... substance identified generically as lithium salt of sulfophenyl azo phenyl azo disulfostilbene (PMN...

  8. 40 CFR 721.9538 - Lithium salt of sulfophenyl azo phenyl azo disulfostilbene (generic).

    Code of Federal Regulations, 2014 CFR

    2014-07-01

    ... 40 Protection of Environment 31 2014-07-01 2014-07-01 false Lithium salt of sulfophenyl azo phenyl... Significant New Uses for Specific Chemical Substances § 721.9538 Lithium salt of sulfophenyl azo phenyl azo... substance identified generically as lithium salt of sulfophenyl azo phenyl azo disulfostilbene (PMN...

  9. 40 CFR 721.9538 - Lithium salt of sulfophenyl azo phenyl azo disulfostilbene (generic).

    Code of Federal Regulations, 2012 CFR

    2012-07-01

    ... 40 Protection of Environment 32 2012-07-01 2012-07-01 false Lithium salt of sulfophenyl azo phenyl... Significant New Uses for Specific Chemical Substances § 721.9538 Lithium salt of sulfophenyl azo phenyl azo... substance identified generically as lithium salt of sulfophenyl azo phenyl azo disulfostilbene (PMN...

  10. 40 CFR 721.9538 - Lithium salt of sulfophenyl azo phenyl azo disulfostilbene (generic).

    Code of Federal Regulations, 2013 CFR

    2013-07-01

    ... 40 Protection of Environment 32 2013-07-01 2013-07-01 false Lithium salt of sulfophenyl azo phenyl... Significant New Uses for Specific Chemical Substances § 721.9538 Lithium salt of sulfophenyl azo phenyl azo... substance identified generically as lithium salt of sulfophenyl azo phenyl azo disulfostilbene (PMN...

  11. Selective growth of catalyst-free ZnO nanowire arrays on Al:ZnO for device application

    SciTech Connect

    Chung, T. F.; Luo, L. B.; He, Z. B.; Leung, Y. H.; Shafiq, I.; Yao, Z. Q.; Lee, S. T.

    2007-12-03

    Vertically aligned ZnO nanowire (NW) arrays have been synthesized selectively on patterned aluminum-doped zinc oxide (AZO) layer deposited on silicon substrates without using any metal catalysts. The growth region was defined by conventional photolithography with an insulating template. Careful control of the types of template materials and growth conditions allows good alignment and growth selectivity for ZnO NW arrays. Sharp ultraviolet band-edge peak observed in the photoluminescence spectra of the patterned ZnO NW arrays reveals good optical qualities. The current-voltage characteristics of ZnO NWs/AZO/p-Si device suggest that patterned and aligned ZnO NW arrays on AZO may be used in optoelectronic devices.

  12. Highly Al-doped TiO{sub 2} nanoparticles produced by Ball Mill Method: structural and electronic characterization

    SciTech Connect

    Santos, Desireé M. de los Navas, Javier Sánchez-Coronilla, Antonio; Alcántara, Rodrigo; Fernández-Lorenzo, Concha; Martín-Calleja, Joaquín

    2015-10-15

    Highlights: • Highly Al-doped TiO{sub 2} nanoparticles were synthesized using a Ball Mill Method. • Al doping delayed anatase to rutile phase transformation. • Al doping allow controlling the structural and electronic properties of nanoparticles. - Abstract: This study presents an easy method for synthesizing highly doped TiO{sub 2} nanoparticles. The Ball Mill method was used to synthesize pure and Al-doped titanium dioxide, with an atomic percentage up to 15.7 at.% Al/(Al + Ti). The samples were annealed at 773 K, 973 K and 1173 K, and characterized using ICP-AES, XRD, Raman spectroscopy, FT-IR, TG, STEM, XPS, and UV–vis spectroscopy. The effect of doping and the calcination temperature on the structure and properties of the nanoparticles were studied. The results show high levels of internal doping due to the substitution of Ti{sup 4+} ions by Al{sup 3+} in the TiO{sub 2} lattice. Furthermore, anatase to rutile transformation occurs at higher temperatures when the percentage of doping increases. Therefore, Al doping allows us to control the structural and electronic properties of the nanoparticle synthesized. So, it is possible to obtain nanoparticles with anatase as predominant phase in a higher range of temperature.

  13. Structural, electronic and magnetic effects of Al-doped niobium clusters: a density functional theory study.

    PubMed

    Wang, Huai-Qian; Li, Hui-Fang; Wang, Jia-Xian; Kuang, Xiao-Yu

    2012-07-01

    The application of the ab initio stochastic search procedure with Saunders "kick" method has been carried out for the elucidation of global minimum structures of a series of Al-doped clusters, Nb(n)Al (1 ≤ n ≤ 10). We have studied the structural characters, growth behaviors, electronic and magnetic properties of Nb(n)Al by the density functional theory calculations. Unlike the previous literature reported on Al-doped systems where ground state structures undergo a structural transition from the Al-capped frame to Al-encapsulated structure, we found that Al atom always occupies the surface of Nb(n)Al clusters and structural transition does not take place until n = 10. Note that the fragmentation proceeds preferably by the ejection of an aluminum atom other than niobium atom. According to the natural population analysis, charges always transfer from aluminum to niobium atoms. Furthermore, the magnetic moments of the Nb(n)Al clusters are mainly located on the 4d orbital of niobium atoms, and aluminum atom possesses very small magnetic moments.

  14. Theoretical study on the phenylpropanolamine drug interaction with the pristine, Si and Al doped [60] fullerenes

    NASA Astrophysics Data System (ADS)

    Moradi, Morteza; Nouraliei, Milad; Moradi, Reza

    2017-03-01

    Phenylpropanolamine (PPA) is a popular drug of abuse and its detection is of great importance for police and drug communities. Herein, we investigated the electronic sensitivity and reactivity of pristine, Al and Si doped C60 fullerenes to the PPA drug, using density functional theory calculations. Two adsorption mechanisms were predicted for PPA on the pristine C60 including cycloaddition and adsorption via -NH2 group. It was found that the pristine C60 has a good sensitivity to this drug but suffers from a weak interaction (adsorption energy -0.1 kcal/mol) because of structural deformation and aromaticity break. The PPA is adsorbed on the Al or Si doped C60 from its -OH or -NH2 groups. The Al-doping significantly improves the reactivity of C60 but decreases its electronic sensitivity. Unlike the Al-doping, the Si-doping increases both the reactivity and electronic sensitivity to the PPA drug. At the presence of PPA drug, the conductivity of the Si-doped C60 considerably increases due to the HOMO-LUMO gap reduction by about 30.3%. Different analyses were used to obtain the results including nucleus independent chemical shift (NICS), density of states (DOS), molecular electrostatic potential (MEP), frontier molecular orbitals (FMO), etc.

  15. Properties of Al-doped ZnS Films Grown by Chemical Bath Deposition

    NASA Astrophysics Data System (ADS)

    Nagamani, K.; Prathap, P.; Lingappa, Y.; Miles, R. W.; Reddy, K. T. R.

    Zinc sulphide (ZnS) buffer layers are a cadmium free, wider energy band gap, alternative to the cadmium sulphide (CdS) buffer layers commonly used in copper indium gallium diselenide (CuInGaSe2)-based solar cells. However extrinsic doping of the ZnS is important to lower the resistivity of the layers and to improve flexibility of device design. In this work, Al-doped ZnS nanocrystalline films have been produced on glass substrates using a chemical bath deposition (CBD) method. The Al- concentration was varied from 0 at. % to 10 at. %, keeping other deposition parameters constant. The elemental composition of a typical sample with 6 at. % 'Al' in ZnS was Zn=44.9 at. %, S=49.8 at. % and Al=5.3 at.%. The X-ray diffraction data taken on these samples showed a broad peak corresponding to the (111) plane of ZnS while the crystallite size varied in the range, 8 - 15 nm, depending on the concentration of Al in the layers. The films with a Al-doping content of 6 at. % had an optical transmittance of 75% in the visible range and the energy band gap evaluated from the data was 3.66 eV. The films n-type electrical conductivities and the electrical resistivity varied in the range, 107-103 Ωcm, it decreasing with an increase of the Al-concentration in the solution.

  16. Fabrication of Vertical Organic Light-Emitting Transistor Using ZnO Thin Film

    NASA Astrophysics Data System (ADS)

    Yamauchi, Hiroshi; Iizuka, Masaaki; Kudo, Kazuhiro

    2007-04-01

    Organic light-emitting diodes (OLEDs) combined with thin film transistor (TFT) are well suitable elements for low-cost, large-area active matrix displays. On the other hand, zinc oxide (ZnO) is a transparent material and its electrical conductivity is controlled from conductive to insulating by growth conditions. The drain current of ZnO FET is 180 μA. The OLED uses ZnO thin film (Al-doped) for the electron injection layer and is controlled by radio frequency (rf) and direct current (dc) sputtering conditions, such as Al concentration and gas pressure. Al concentration in the ZnO film and deposition rate have strong effects on electron injection. Furthermore, the OLED driven by ZnO FET shows a luminance of 13 cd/m2, a luminance efficiency of 0.7 cd/A, and an on-off ratio of 650.

  17. Simulation, Fabrication, and Characterization of Al-Doped ZnO-Based Ultraviolet Photodetectors

    NASA Astrophysics Data System (ADS)

    Singh, Shaivalini

    2016-01-01

    This paper reports a simulation and experimental study of aluminum-doped zinc oxide (AZO)-based metal-semiconductor-metal (MSM) photodetectors. High-quality AZO thin films were deposited on p-type Si substrates by radiofrequency (RF) sputtering method. Interdigitated palladium metal electrodes were designed over AZO/Si samples by lithographic technique. I- V detector characteristics were investigated in dark as well as illuminated condition, using an ultraviolet (UV) source with wavelength of 0.372 μm and power of 2.8 × 10-6 W. Four different MSM devices with the same width and finger spacing of 5 μm, 10 μm, 20 μm, and 50 μm were fabricated, and the effect of finger spacing on the MSM detector I- V characteristics was investigated. It was found that the photocurrent increased by more than two orders of magnitude with UV light illumination. Simulation of these MSM devices was also carried out by using SENTAURUS TCAD software. The variation of the resistance with the electrode spacing for the MSM devices was examined by both experiment and simulation. The simulated and experimental results were compared and found to be in good agreement with each other. In both conditions (dark as well as under UV illumination), the resistance increased as the spacing between the electrodes was increased. These simulation studies will be useful for designing high-performance optoelectronic devices.

  18. Investigation of Al doping concentration effect on the structural and optical properties of the nanostructured CdO thin film

    NASA Astrophysics Data System (ADS)

    Gencer Imer, Arife

    2016-04-01

    Nanostructured aluminium (Al) doped cadmium oxide (CdO) films with highly electrical conductivity and optical transparency have been deposited for the first time on soda-lime glass substrates preheated at 250 °C by ultrasonic spray coating technique. The aluminium dopant content in the CdO film was changed from 0 to 5 at%. The influencing of Al doping on the structural, morphological, electrical and optical properties of the CdO nanostructured films has been investigated. Atomic force microscopy study showed the grain size of the films is an order of nanometers, and it decreases with increase in Al dopant content. All the films having cubic structure with a lattice parameter 4.69 Å were determined via X ray diffraction analysis. The optical band gap value of the films, obtained by optical absorption, was found to increase with Al doping. Electrical studies exhibited mobility, carrier concentration and resistivity of the film strongly dependent on the doping content. It has been evaluated that optical band gap, and grain size of the nanostructured CdO film could be modified by Al doping.

  19. Chrystal structure properties of Al-doped Li4Ti5O12 synthesized by solid state reaction method

    NASA Astrophysics Data System (ADS)

    Sandi, Dianisa Khoirum; Priyono, Slamet; Suryana, Risa

    2016-02-01

    This research aim is to analyze the effect of Aluminum (Al) doping in the structural properties of Al-doped Li4Ti5O12 as anode in lithium ion battery. Al-doped Li4Ti5O12 powders were synthesized by solid state reaction method. LiOH.H2O, TiO2, and Al2O3 were raw materials. These materials were milled for 15 h, calcined at temperature of 750oC and sintered at temperature of 800oC. Mole percentage of doping Al (x) was varied at x=0; x=0.025; and x =0.05. Al-doped Li4Ti5O12 powders were synthesized by solid state reaction method. X-ray diffraction was employed to determine the structure of Li4Ti5O12. The PDXL software was performed on the x-ray diffraction data to estimate the phase percentage, the lattice parameter, the unit cell volume, and the crystal density. Al-doped Li4Ti5O12 has cubic crystal structure. Al-doping at x=0 and x=0.025 does not change the phase as Li4Ti5O12 while at x=0.050 the phase changes to the LiTiAlO4. The diffraction patterns show that the angle shifted to the right as the increase of x which indicated that Al substitute Ti site. Percentage of Li4Ti5O12 phase at x=0 and x=0.025 was 97.8% and 96.8%, respectively. However, the lattice parameters, the unit cell volume, and the crystal density does not change significantly at x=0; x=0.025; and x=0.050. Based on the percentage of Li4Ti5O12 phase, the Al-doped Li at x=0 and x=0.025 is promising as a lithium battery anode.

  20. Structural and nonlinear optical behavior of Ag-doped ZnO films

    NASA Astrophysics Data System (ADS)

    Tan, Ming-Yue; Yao, Cheng-Bao; Yan, Xiao-Yan; Li, Jin; Qu, Shu-Yang; Hu, Jun-Yan; Sun, Wen-Jun; Li, Qiang-Hua; Yang, Shou-Bin

    2016-01-01

    We present the structural and nonlinear optical behavior of Ag-doped ZnO (AZO) films prepared by magnetron sputtering. The structural of AZO films are systematically investigated by X-ray diffraction (XRD) and scanning electronic microscopy (SEM), respectively. The results show that AZO films can still retain a wurtzite structure, although the c-axis as preferred orientation is decreased by Ag doping. As the amounts of the Ag dopant were increased, the crystallinity as well as the absorptivity and optical band gap were increased. Moreover, the nonlinear optical characterized of the AZO films was studied using Z-scan technique. These samples show self-defocusing nonlinearity and good nonlinear absorption behavior which increases with increasing Ag volume fraction. AZO is a potential nanocomposite material for the development of nonlinear optical devices with a relatively small limiting threshold.

  1. Study of the wettability of ZnO nanofilms

    NASA Astrophysics Data System (ADS)

    Subedi, Deepak Prasad; Madhup, Dinesh Kumar; Sharma, Ashish; Joshi, Ujjwal Man; Huczko, Andrzej

    2012-04-01

    Al-doped and un-doped ZnO thin films deposited on quartz substrates by the nebulized spray pyrolysis method were studied to investigate the wettability of the surface. The main objective of the present study was to investigate the wettability of ZnO thin film by changing the concentration of Al doping. Microstructure and water contact angles of the films were measured by scanning electron microscopy (SEM) and using a contact angle goniometer. SEM studies revealed that the grain size within the film increases with the doping concentration. The contact angles were studied to see the effect of aluminum doping on the hydrophilicity of the film. ZnO films were found to be hydrophobic in nature. A good correlation was observed between the SEM micrographs and contact angle results. The nature of the film was found to change from being hydrophobic to hydrophilic after the treatment in low-pressure DC glow discharge plasma, which, however, was reversible with the storage time.

  2. Electrochemical Synthesis of ZnO Nanorods/Nanotubes/Nanopencils on Transparent Aluminium-Doped Zinc Oxide Thin Films for Photocatalytic Applications.

    PubMed

    Le, Thi Ngoc Tu; Pham, Tan Thi; Ngo, Quang Minh; Vu, Thi Hanh Thu

    2015-09-01

    We report an electrochemical synthesis of homogeneous and well-aligned ZnO nanorods (NRs) on transparent conducting aluminium-doped zinc oxide (AZO) thin films as electrodes. The selected ZnO NRs was then chemically corroded in HCl and KCl aqueous solutions to form nanopencils (NPs), and nanotubes (NTs), respectively. A DC magnetron sputtering was employed to fabricate AZO thin films at various thicknesses. The obtained AZO thin films have a c-direction orientation, transmittance above 80% in visible region, and sheet resistance approximately 40 Ω/sq. They are considered to be relevant as electrodes and seeding layers for electrochemical. The ZnO NRs are directly grown on the AZOs without a need of catalysts or additional seeding layers at temperature as low as 85 degrees C. Their shapes are strongly associated with the AZO thickness that provides a valuable way to control the diameter of ZnO NRs grown atop. With the addition of HCI and KCl aqueous solutions, ZnO NRs were modified their shape to NPs and NTs with the reaction time, respectively. All the ZnO NRs, NPs, and NTs are preferred to grow along c-direction that indicates a lattice matching between AZO thin films and ZnO nanostructrures. Photoluminescence spectra and XRD patterns show that they have good crystallinities. A great photocatalytic activity of ZnO nanostructures promises potential application in environmental treatment and protection. The ZnO NTs exhibits a higher photocatalysis than others possibly due to the oxygen vacancies on the surface and the polarizability of Zn2+ and O2-.

  3. Tailoring structure and magnetic characteristics of strontium hexaferrite via Al doping engineering

    NASA Astrophysics Data System (ADS)

    Wang, H. Z.; Hai, Y. N.; Yao, B.; Xu, Y.; Shan, L.; Xu, L.; Tang, J. L.; Wang, Q. H.

    2017-01-01

    Emerging structure and magnetic properties of Al3+-modified SrFe12O19 M-type hexaferrite system (SrAlxFe12-xO19) had been studied in detail via doping engineering. With Al3+ ion nominal content ranging from 0 to 4 (0≤x≤4), the lattice parameters decrease due to the substitution of Fe3+ ions by smaller Al3+ ions, and the magnetization shows a continuous reduction with the increasing of Al content. For the coercivity, its value initially increases, reaching a maximum value of 16,876.9 Oe at x=3, and then reduces with the Al content further increase. When all the Fe3+ ions (x=4) are replaced by Al3+ ions, the net magnetic moment will be closed to zero, that will weaken the exchange interaction between Fe3+ ions, resulting in decrease of coercivity sharply and transformation ferrimagnetism into antiferromagnetism. The mechanism of the improvement of the magnetic properties induced by Al doping is discussed in the present work.

  4. ZnO ratio-induced photocatalytic behavior of TiO2-ZnO nanocomposite

    NASA Astrophysics Data System (ADS)

    Jlassi, M.; Chorfi, H.; Saadoun, M.; Bessaïs, B.

    2013-10-01

    The aim of this study is to examine the photocatalytic activity of TiO2 (P25)-ZnO nanocomposite. The precursors of the TiO2-ZnO nanocomposite were deposited on a low cost ceramic substrate using the simple roll-coating method. We seek to improve the photocatalytic performance and the mechanical adherence of the TiO2 nanoparticles by adding ZnO. The photocatalytic properties of the nanocomposite were tested through the bleaching of polluted water. These properties were optimized by varying the composition of the nanocomposite precursors, deposition conditions and temperature annealing. A systematic study of the nanocomposites was made using ultraviolet-visible spectroscopy, X-ray diffraction (XRD), scanning electron microscopy (SEM) and transmission electron microscopy (TEM). These characterizations allowed us to establish a relationship between the photocatalytic performances and the ZnO ratio using an azo-dye (methyl orange). It was found that the kinetic degradation increases with the increasing of the ZnO ratio. The Photodegradation of the dye using the sole ZnO was found to be more efficient than the P25 TiO2 and the TiO2-ZnO nanocomposite itself. The discussions were based on the mobility and lifetime of the charge carriers generated in the ZnO or in TiO2-ZnO nanocomposite.

  5. A large gap opening of graphene induced by the adsorption of CO on the Al-doped site.

    PubMed

    Peyghan, Ali Ahmadi; Noei, Maziar; Tabar, Mohammad Bigdeli

    2013-08-01

    We investigated CO adsorption on the pristine, Stone-Wales (SW) defected, Al- and Si- doped graphenes by using density functional calculations in terms of geometric, energetic and electronic properties. It was found that CO molecule is weakly adsorbed on the pristine and SW defected graphenes and their electronic properties were slightly changed. The Al- and Si- doped graphenes show high reactivity toward CO, so calculated adoption energies are about -11.40 and -13.75 kcal mol(-1) in the most favorable states. It was found that, among all the structures, the electronic properties of Al-doped graphene are strongly sensitive to the presence of CO molecule. We demonstrate the existence of a large Eg opening of 0.87 eV in graphene which is induced by Al-doping and CO adsorption.

  6. Al-doped TiO2 mesoporous material supported Pd with enhanced catalytic activity for complete oxidation of ethanol

    NASA Astrophysics Data System (ADS)

    Zhu, Jing; Mu, Wentao; Su, Liqing; Li, Xingying; Guo, Yuyu; Zhang, Shen; Li, Zhe

    2017-04-01

    Pd catalysts supported on Al-doped TiO2 mesoporous materials were evaluated in complete oxidation of ethanol. The catalysts synthesized by wet impregnation based on evaporation-induced self-assembly were characterized by X-ray diffraction, measurement of pore structure, XPS, FT-IR, temperature programmed reduction and TEM. Characteristic results showed that the aluminium was doped into the lattice of mesoporous anatase TiO2 to form Al-O-Ti defect structure. Catalytic results revealed that Al-doped catalysts were much more active than the pristine one, especially at low temperature (≤200 °C). This should be ascribed to the introduction of aluminium ions that suppressed the strong metal-support interaction and increased the active sites of Pd oxides, enhanced the stabilized anatase TiO2, improved well dispersed high valence palladium species with high reducibility and enriched chemisorption oxygen.

  7. High Field-Emission Stability of Offset-Thin-Film Transistor-Controlled Al-Doped Zinc Oxide Nanowires

    NASA Astrophysics Data System (ADS)

    Yang, Po-Yu; Wang, Jyh-Liang; Tsai, Wei-Chih; Wang, Shui-Jinn; Lin, Jia-Chuan; Lee, I.-Che; Chang, Chia-Tsung; Cheng, Huang-Chung

    2011-04-01

    Aluminum-doped zinc oxide (AZO) nanowire (NW) arrays incorporating an offset thin-film transistor (offset-TFT) have been proposed to achieve high field-emission (FE) stability. The AZO NW field emission arrays (FEAs) were hydrothermally grown at a low temperature of 85 °C. The uncontrolled AZO NW FEAs demonstrated superior FE characteristics (i.e., turn-on field of ˜2.17 V/µm and threshold field of ˜3.43 V/µm) compared with those of the conventional CNT FEAs grown at a temperature below 600 °C. However, uncontrolled AZO NW FEAs show a larger current fluctuation of 15.6%. Therefore, the offset-TFTs were used to control the AZO NW FEAs. Consequently, the fluctuation of AZO NW FEAs could be significantly reduced to less than 2%. This novel field emission device exhibits good emission stability, low-voltage controllability, low-temperature processing, and structural simplicity, making it promising for applications in flat panel displays.

  8. Ultrafast dynamics of Al-doped zinc oxide under optical excitation (Presentation Recording)

    NASA Astrophysics Data System (ADS)

    Kinsey, Nathaniel; DeVault, Clayton T.; Kim, Jongbum; Ferrera, Marcello; Kildishev, Alexander V.; Shalaev, Vladimir M.; Boltasseva, Alexandra

    2015-09-01

    There is a continual need to explore new and promising dynamic materials to power next-generation switchable devices. In recent years, transparent conducting oxides have been shown to be vital materials for such systems, allowing for both optical and electrical tunability. Using a pump-probe technique, we investigate the optical tunability of CMOS-compatible, highly aluminum doped zinc oxide (AZO) thin films. The sample was pumped at 325 nm and probed with a weak beam at 1.3 μm to determine the timescale and magnitude of the changes by altering the temporal delay between the pulses with a delay line. For an incident fluence of 3.9 mJ/cm2 a change of 40% in reflection and 30% (max 6.3dB/μm modulation depth) in transmission is observed which is fully recovered within 1ps. Using a computational model, the experimental results were fitted for the given fluence allowing the recombination time and induced carrier density to be extracted. For a fluence of 3.9 mJ/cm2 the average excess carrier density within the material is 0.7×10^20cm-3 and the recombination time is 88fs. The ultrafast temporal response is the result of Auger recombination due to the extremely high carrier concentration present in our films, ~10^21 cm-3. By measuring and fitting the results at several incident fluence levels, the recombination time versus carrier density was determined and fitted with an Auger model resulting in an Auger coefficient of C = 1.03×10^20cm6/sec. Consequently, AZO is shown to be a unique, promising, and CMOS-compatible material for high performance dynamic devices in the near future.

  9. 40 CFR 721.10107 - Naphthalenedisulfonic acid, [amino-hydroxy-[(substituted)azo-sulfo-naphthaleneyl]azo]-hydroxy...

    Code of Federal Regulations, 2014 CFR

    2014-07-01

    ... 40 Protection of Environment 31 2014-07-01 2014-07-01 false Naphthalenedisulfonic acid, azo... Significant New Uses for Specific Chemical Substances § 721.10107 Naphthalenedisulfonic acid, azo]-hydroxy... chemical substance identified generically as naphthalenedisulfonic acid, azo]-hydroxy- , metal salt (PMN...

  10. 40 CFR 721.10107 - Naphthalenedisulfonic acid, [amino-hydroxy-[(substituted)azo-sulfo-naphthaleneyl]azo]-hydroxy...

    Code of Federal Regulations, 2011 CFR

    2011-07-01

    ... 40 Protection of Environment 31 2011-07-01 2011-07-01 false Naphthalenedisulfonic acid, azo... Significant New Uses for Specific Chemical Substances § 721.10107 Naphthalenedisulfonic acid, azo]-hydroxy... chemical substance identified generically as naphthalenedisulfonic acid, azo]-hydroxy- , metal salt (PMN...

  11. 40 CFR 721.10107 - Naphthalenedisulfonic acid, [amino-hydroxy-[(substituted)azo-sulfo-naphthaleneyl]azo]-hydroxy...

    Code of Federal Regulations, 2012 CFR

    2012-07-01

    ... 40 Protection of Environment 32 2012-07-01 2012-07-01 false Naphthalenedisulfonic acid, azo... Significant New Uses for Specific Chemical Substances § 721.10107 Naphthalenedisulfonic acid, azo]-hydroxy... chemical substance identified generically as naphthalenedisulfonic acid, azo]-hydroxy- , metal salt (PMN...

  12. 40 CFR 721.10107 - Naphthalenedisulfonic acid, [amino-hydroxy-[(substituted)azo-sulfo-naphthaleneyl]azo]-hydroxy...

    Code of Federal Regulations, 2010 CFR

    2010-07-01

    ... 40 Protection of Environment 30 2010-07-01 2010-07-01 false Naphthalenedisulfonic acid, azo... Significant New Uses for Specific Chemical Substances § 721.10107 Naphthalenedisulfonic acid, azo]-hydroxy... chemical substance identified generically as naphthalenedisulfonic acid, azo]-hydroxy- , metal salt (PMN...

  13. 40 CFR 721.10107 - Naphthalenedisulfonic acid, [amino-hydroxy-[(substituted)azo-sulfo-naphthaleneyl]azo]-hydroxy...

    Code of Federal Regulations, 2013 CFR

    2013-07-01

    ... 40 Protection of Environment 32 2013-07-01 2013-07-01 false Naphthalenedisulfonic acid, azo... Significant New Uses for Specific Chemical Substances § 721.10107 Naphthalenedisulfonic acid, azo]-hydroxy... chemical substance identified generically as naphthalenedisulfonic acid, azo]-hydroxy- , metal salt (PMN...

  14. 40 CFR 721.2577 - Copper complex of (substituted sulfonaphthyl azo substituted phenyl) disulfonaphthyl azo, amine...

    Code of Federal Regulations, 2010 CFR

    2010-07-01

    ... 40 Protection of Environment 30 2010-07-01 2010-07-01 false Copper complex of (substituted... Copper complex of (substituted sulfonaphthyl azo substituted phenyl) disulfonaphthyl azo, amine salt... substances identified generically as copper complex of (substituted sulfonaphthyl azo substituted...

  15. 40 CFR 721.2577 - Copper complex of (substituted sulfonaphthyl azo substituted phenyl) disulfonaphthyl azo, amine...

    Code of Federal Regulations, 2012 CFR

    2012-07-01

    ... 40 Protection of Environment 32 2012-07-01 2012-07-01 false Copper complex of (substituted... Copper complex of (substituted sulfonaphthyl azo substituted phenyl) disulfonaphthyl azo, amine salt... substances identified generically as copper complex of (substituted sulfonaphthyl azo substituted...

  16. 40 CFR 721.2577 - Copper complex of (substituted sulfonaphthyl azo substituted phenyl) disulfonaphthyl azo, amine...

    Code of Federal Regulations, 2013 CFR

    2013-07-01

    ... 40 Protection of Environment 32 2013-07-01 2013-07-01 false Copper complex of (substituted... Copper complex of (substituted sulfonaphthyl azo substituted phenyl) disulfonaphthyl azo, amine salt... substances identified generically as copper complex of (substituted sulfonaphthyl azo substituted...

  17. 40 CFR 721.2577 - Copper complex of (substituted sulfonaphthyl azo substituted phenyl) disulfonaphthyl azo, amine...

    Code of Federal Regulations, 2011 CFR

    2011-07-01

    ... 40 Protection of Environment 31 2011-07-01 2011-07-01 false Copper complex of (substituted... Copper complex of (substituted sulfonaphthyl azo substituted phenyl) disulfonaphthyl azo, amine salt... substances identified generically as copper complex of (substituted sulfonaphthyl azo substituted...

  18. Dilute Magnetic Semiconductors from Electrodeposited ZnO Nanowires

    SciTech Connect

    Athavan, Nadarajah; Konenkamp, R.

    2011-02-02

    We present experimental results on the magnetic properties of doped ZnO nanowires grown at 80 8C in electrodeposition. We show that impurities such as Al, Mn, Co, and Cu can be incorporated in the nanowires by adding the corresponding metal salts to the electrolyte solution. At concentration levels of a few atomic percent we find the impurity concentration in the solid to be approximately proportional to the precursor concentration in solution. ZnO nanowrires doped with Cu, Co, and Mn show superparamagnetic response at room temperature, while undoped and Al-doped wires show no discernible magnetic response. The results indicate that with Cu, Mn, and Co doping dilute magnetic semiconductors can be prepared.

  19. Pristine and Al-doped hematite printed films as photoanodes of p-type dye-sensitized solar cells

    NASA Astrophysics Data System (ADS)

    Congiu, Mirko; De Marco, Maria L.; Bonomo, Matteo; Nunes-Neto, Oswaldo; Dini, Danilo; Graeff, Carlos F. O.

    2017-01-01

    We hereby propose a non-expensive method for the deposition of pure and Al-doped hematite photoanodes in the configuration of thin films for the application of dye-sensitized solar cells (DSSC). The electrodes have been prepared from hematite nanoparticles that were obtained by thermal degradation of a chemical precursor. The particles have been used in the preparation of a paste, suitable for both screen printing and doctor blade deposition. The paste was then spread on fluorine-doped tin oxide (FTO) to obtain porous hematite electrodes. The electrodes have been sensitized using N3 and D5 dyes and were characterized through current/voltage curves under simulated sun light (1 sun, AM 1.5) with a Pt counter electrode. Al-doping of hematite showed interesting changes in the physical and electrochemical characteristics of sensitized photoanodes since we could notice the growth of AlFe2O4 (hercynite) as a secondary crystal phase into the oxides obtained by firing the mixtures of two chemical precursors at different molar ratios. Pure and Al-doped hematite electrodes have been used in a complete n-type DSSCs. The kinetics of charge transfer through the interface dye/electrolyte was studied and compared to that of a typical p-type DSSC based on NiO photocathodes sensitized with erythrosine B. The results suggest a potential application of both Fe2O3 and Fe2O3/AlFe2O4 as photoanodes of a tandem DSSC.

  20. Transparent Conducting Oxides for Infrared Plasmonic Waveguides: ZnO (Preprint)

    DTIC Science & Technology

    2014-01-15

    ZnO (AZO) layers grown by RF sputtering on quartz glass that employ a unique, 20-nm-thick, ZnON buffer layer, which minimizes the strong thickness...ZnON buffer layer, which minimizes the strong thickness dependence of mobility (µ) on thickness (d). The values of mobility and carrier...inserting a thin ZnON buffer layer between the substrate and ZnO layer. For example, in undoped ZnO grown on c-plane Al2O3, the rocking-curve FWHM of the

  1. The effect of 0.025 Al-doped in Li4Ti5O12 material on the performance of half cell lithium ion battery

    NASA Astrophysics Data System (ADS)

    Priyono, Slamet; Triwibowo, Joko; Prihandoko, Bambang

    2016-02-01

    The effect of 0.025 Al-doped Li4Ti5O12 as anode material for Lithium Ion battery had been studied. The pure and 0.025 Al-doped Li4Ti5O12 were synthesized through solid state process in air atmosphere. Physical characteristics of all samples were observed by XRD, FTIR, and PSA. The XRD analysis revealed that the obtained particle was highly crystalline and had a face-centered cubic spinel structure. The XRD pattern also showed that the 0.025 Al-doped on the Li4Ti5O12 did not change crystal structure of Li4Ti5O12. FTIR analysis confirmed that the spinel structure in fingerprint region was unchanged when the structure was doped by 0.025 Al. However the doping of 0.025 Al increased particle size significantly. The electrochemical performance was studied by using cyclic voltammetry (CV) and charge-discharge (CD) curves. Electrochemical analysis showed that pure Li4Ti5O12 has higher capacity than 0.025 Al-doped Li4Ti5O12 had. But 0.025 Al-doped Li4Ti5O12 possesses a better cycling stability than pure Li4Ti5O12.

  2. Effect of Al Doping on Optical Band Gap Energy of Al-TiO2 Thin Films.

    PubMed

    Song, Yo-Seung; Kim, Bae-Yeon; Cho, Nam-Ihn; Lee, Deuk Yong

    2015-07-01

    Al-TiO2 thin films were prepared using a sol-gel derived spin coating by varying the Al/Ti molar ratio from 0 to 0.73 to investigate the effect of Al doping on the optical band gap energy (Eg) of the films. GAXRD results indicated that Al-TiO2 is composed of anatase and FTO phases when the Al/Ti molar ratio was less than 0.18. Above 0.38, no other peaks except FTO were found and transparency of the films was severely deteriorated. Eg of Al-TiO2 decreased from 3.20 eV to 2.07 eV when the Al/Ti ratio was raised from 0 to 0.38. Eg of 2.59 eV was found for the anatase Al-TiO2 films having the Al/Ti ratio of 0.18. The absorption band of Al-TiO2 coatings shifted dramatically from the UV region to the visible region with increasing the amount of Al dopant. The Al doping was mainly attributed to the optical band gap energy of Al-TiO2.

  3. Crystal Structure and Photocatalytic Activity of Al-Doped TiO2 Nanofibers for Methylene Blue Dye Degradation.

    PubMed

    Lee, Deuk Yong; Lee, Myung-Hyun; Kim, Bae-Yeon; Cho, Nam-Ihn

    2016-05-01

    Al-TiO2 nanofibers were prepared using a sol-gel derived electrospinning by varying the Al/Ti molar ratio from 0 to 0.73 to investigate the effect of Al doping on the crystal structure and the photocatalytic activity of Al-TiO2 for methylene blue (MB) degradation. XRD results indicated that as the Al/Ti molar ratio rose, crystal structure of Al-TiO2 was changed from anatase/rutile (undoped), anatase (0.07-0.18), to amorphous phase (0.38-0.73), which was confirmed by XPS and Raman analysis. The degradation kinetic constant increased from 7.3 x 10(-4) min(-1) to 4.5 x 10(-3) min(-1) with the increase of Al/Ti molar ratios from 0 to 0.38, but decreased to 3.4 x 10(-3) min(-1) when the Al/Ti molar ratio reached 0.73. The Al-TiO2 catalyst doped with 0.38 Al/Ti molar ratio demonstrated the best MB degradation. Experimental results indicated that the Al doping in Al-TiO2 was mainly attributed to the crystal structure of TiO2 and the photocatalytic degradation of MB.

  4. Al-doping influence on crystal growth of Ni-Al alloy: Experimental testing of a theoretical model

    NASA Astrophysics Data System (ADS)

    Rong, Xi-Ming; Chen, Jun; Li, Jing-Tian; Zhuang, Jun; Ning, Xi-Jing

    2015-12-01

    Recently, a condensing potential model was developed to evaluate the crystallization ability of bulk materials [Ye X X, Ming C, Hu Y C and Ning X J 2009 J. Chem. Phys. 130 164711 and Peng K, Ming C, Ye X X, Zhang W X, Zhuang J and Ning X J 2011 Chem. Phys. Lett. 501 330], showing that the best temperature for single crystal growth is about 0.6Tm, where Tm is the melting temperature, and for Ni-Al alloy, more than 6 wt% of Al-doping will badly reduce the crystallization ability. In order to verify these predictions, we fabricated Ni-Al films with different concentrations of Al on Si substrates at room temperature by pulsed laser deposition, and post-annealed the films at 833, 933, 1033 (˜ 0.6Tm), 1133, and 1233 K in vacuum furnace, respectively. The x-ray diffraction spectra show that annealing at 0.6Tm is indeed best for larger crystal grain formation, and the film crystallization ability remarkably declines with more than 6-wt% Al doping. Project supported by the Specialized Research Fund for the Doctoral Program of Higher Education, China (Grant No. 20130071110018) and the National Natural Science Foundation of China (Grant No. 11274073).

  5. Controlling the Al-doping profile and accompanying electrical properties of rutile-phased TiO2 thin films.

    PubMed

    Jeon, Woojin; Rha, Sang Ho; Lee, Woongkyu; Yoo, Yeon Woo; An, Cheol Hyun; Jung, Kwang Hwan; Kim, Seong Keun; Hwang, Cheol Seong

    2014-05-28

    The role of Al dopant in rutile-phased TiO2 films in the evaluation of the mechanism of leakage current reduction in Al-doped TiO2 (ATO) was studied in detail. The leakage current of the ATO film was strongly affected by the Al concentration at the interface between the ATO film and the RuO2 electrode. The conduction band offset of the interface increased with the increase in the Al dopant concentration in the rutile TiO2, which reduced the leakage current in the voltage region pertinent to the next-generation dynamic random access memory application. However, the Al doping in the anatase TiO2 did not notably increase the conduction band offset even with a higher Al concentration. The detailed analyses of the leakage conduction mechanism based on the quantum mechanical transfer-matrix method showed that Schottky emission and Fowler-Nordheim tunneling was the dominant leakage conduction mechanism in the lower and higher voltage regions, respectively. The chemical analyses using X-ray photoelectron spectroscopy corroborated the electrical test results.

  6. Pressure-induced phase transition and electrical properties of thermoelectric Al-doped Mg{sub 2}Si

    SciTech Connect

    Zhao, Jianbao; Tse, John S.; Liu, Zhenxian; Gordon, Robert A.; Takarabe, Kenichi; Reid, Joel

    2015-10-14

    A recent study has shown the thermoelectric performance of Al-doped Mg{sub 2}Si materials can be significantly enhanced at moderate pressure. To understand the cause of this phenomenon, we have performed in situ angle dispersive X-ray diffraction and infrared reflectivity measurements up to 17 GPa at room temperature. Contrary to previous experiment, using helium as a pressure transmission medium, no structural transformation was observed in pure Mg{sub 2}Si. In contrast, a phase transition from cubic anti-fluorite (Fm-3m) to orthorhombic anti-cotunnite (Pnma) was observed in the Al-doped sample at 10 GPa. Infrared reflectivity measurements show the electrical conductivity increases with pressure and is further enhanced after the phase transition. The electron density of states at the Fermi level computed form density functional calculations predict a maximum thermoelectric power factor at 1.9 GPa, which is in good agreement with the experimental observation.

  7. Al doping effect on magnetic phase transitions of magnetoelectric hexaferrite Ba0.7Sr1.3Zn2(Fe1-xAlx)12O22

    NASA Astrophysics Data System (ADS)

    Chang, Hun; Lee, Hak Bong; Song, Young-Sang; Chung, Jae-Ho; Kim, S. A.; Oh, I. H.; Reehuis, M.; Schefer, J.

    2012-02-01

    We investigated the effect of Al doping in magnetic properties of the Y-type hexaferrite Ba0.7Sr1.3Zn2(Fe1-xAlx)12O22 (0≤x≤0.12), which exhibit field-induced magnetoelectric polarization. We find that Al doping increases the pitch of a spin helix and enhances c-axis magnetization, stabilizing longitudinal conical phases. These conical phases eventually collapse at x≥ 0.10. These results suggest that competitions between easy-axis and easy-plane anisotropy fields play a key role in generating stable magnetoelectric polarization in Y-type hexaferrites.

  8. Thermally Diffused Al:ZnO Thin Films for Broadband Transparent Conductor.

    PubMed

    Tong, Chong; Yun, Juhyung; Chen, Yen-Jen; Ji, Dengxin; Gan, Qiaoqiang; Anderson, Wayne A

    2016-02-17

    Here, we report an approach to realize highly transparent low resistance Al-doped ZnO (AZO) films for broadband transparent conductors. Thin Al films are deposited on ZnO surfaces, followed by thermal diffusion processes, introducing the Al doping into ZnO thin films. By utilizing the interdiffusion of Al, Zn, and O, the chemical state of Al on the surfaces can be converted to a fully oxidized state, resulting in a low sheet resistance of 6.2 Ω/sq and an excellent transparency (i.e., 96.5% at 550 nm and higher than 85% up to 2500 nm), which is superior compared with some previously reported values for indium tin oxide, solution processed AZO, and many transparent conducting materials using novel nanostructures. Such AZO films are also applied as transparent conducting layers for AZO/Si heterojunction solar cells, demonstrating their applications in optoelectronic devices.

  9. Characteristics of THz carrier dynamics in GaN thin film and ZnO nanowires by temperature dependent terahertz time domain spectroscopy measurement

    NASA Astrophysics Data System (ADS)

    Balci, Soner; Baughman, William; Wilbert, David S.; Shen, Gang; Kung, Patrick; Kim, Seongsin Margaret

    2012-12-01

    We present a comprehensive study of the characteristics of carrier dynamics using temperature dependent terahertz time domain spectroscopy. By utilizing this technique in combination with numerical calculations, the complex refractive index, dielectric function, and conductivity of n-GaN, undoped ZnO NWs, and Al-doped ZnO NWs were obtained. The unique temperature dependent behaviors of major material parameters were studied at THz frequencies, including plasma frequency, relaxation time, carrier concentration and mobility. Frequency and temperature dependent carrier dynamics were subsequently analyzed in these materials through the use of the Drude and the Drude-Smith models.

  10. Ultrafast carrier dynamics and third order nonlinear optical properties of aluminum doped zinc oxide (AZO) thin films

    NASA Astrophysics Data System (ADS)

    Htwe, Zin Maung; Zhang, Yun-Dong; Yao, Cheng-Bao; Li, Hui; Yuan, Ping

    2017-04-01

    Aluminum doped zinc oxide (AZO) thin films were fabricated by simultaneous RF/DC magnetron sputtering technique on sapphire (Al2O3) substrate with different DC sputtering power 2, 6, 8 and 10 W respectively. The sputtered thin films were annealed at 350 °C in order to improve the crystal quality. AZO thin films are systematically analyzed using X-ray diffraction (XRD), scanning electron microscopy (SEM) and UV-VIS spectrometer for structural and optical properties. XRD patterns show that all sputtered thin films are well crystallized with hexagonal wurtzite structure. SEM images reveal the average crystallite sizes are increased after doping Al in ZnO which agreed with the calculated values from XRD. All thin films possess high optical transmittance in visible region and optical band gap values are relatively increased with Al concentration. The ultrafast transient absorption (TA) of AZO was analyzed by femtosecond pump-probe spectroscopy. The kinetic TA curves were fitted by tri-exponential decay function and obtained decay time constants are found to be in few picosecond and nanosecond range for ultrafast and slow processes respectively. Third order nonlinear optical absorption and refraction coefficients were investigated by using Z-scan technique. The observed nonlinear coefficients are enhanced with Al concentration in ZnO.

  11. Low-frequency dielectric properties of intrinsic and Al-doped rutile TiO2 thin films grown by the atomic layer deposition technique

    NASA Astrophysics Data System (ADS)

    Kassmi, M.; Pointet, J.; Gonon, P.; Bsiesy, A.; Vallée, C.; Jomni, F.

    2016-06-01

    Dielectric spectroscopy is carried out for intrinsic and aluminum-doped TiO2 rutile films which are deposited on RuO2 by the atomic layer deposition technique. Capacitance and conductance are measured in the 0.1 Hz-100 kHz range, for ac electric fields up to 1 MVrms/cm. Intrinsic films have a much lower dielectric constant than rutile crystals. This is ascribed to the presence of oxygen vacancies which depress polarizability. When Al is substituted for Ti, the dielectric constant further decreases. By considering Al-induced modification of polarizability, a theoretical relationship between the dielectric constant and the Al concentration is proposed. Al doping drastically decreases the loss in the very low frequency part of the spectrum. However, Al doping has almost no effect on the loss at high frequencies. The effect of Al doping on loss is discussed through models of hopping transport implying intrinsic oxygen vacancies and Al related centers. When increasing the ac electric field in the MVrms/cm range, strong voltage non-linearities are evidenced in undoped films. The conductance increases exponentially with the ac field and the capacitance displays negative values (inductive behavior). Hopping barrier lowering is proposed to explain high-field effects. Finally, it is shown that Al doping strongly improves the high-field dielectric behavior.

  12. Chrystal structure properties of Al-doped Li{sub 4}Ti{sub 5}O{sub 12} synthesized by solid state reaction method

    SciTech Connect

    Sandi, Dianisa Khoirum Suryana, Risa; Priyono, Slamet

    2016-02-08

    This research aim is to analyze the effect of Aluminum (Al) doping in the structural properties of Al-doped Li{sub 4}Ti{sub 5}O{sub 12} as anode in lithium ion battery. Al-doped Li{sub 4}Ti{sub 5}O{sub 12} powders were synthesized by solid state reaction method. LiOH.H{sub 2}O, TiO{sub 2}, and Al{sub 2}O{sub 3} were raw materials. These materials were milled for 15 h, calcined at temperature of 750{sup o}C and sintered at temperature of 800{sup o}C. Mole percentage of doping Al (x) was varied at x=0; x=0.025; and x =0.05. Al-doped Li{sub 4}Ti{sub 5}O{sub 12} powders were synthesized by solid state reaction method. X-ray diffraction was employed to determine the structure of Li{sub 4}Ti{sub 5}O{sub 12}. The PDXL software was performed on the x-ray diffraction data to estimate the phase percentage, the lattice parameter, the unit cell volume, and the crystal density. Al-doped Li{sub 4}Ti{sub 5}O{sub 12} has cubic crystal structure. Al-doping at x=0 and x=0.025 does not change the phase as Li{sub 4}Ti{sub 5}O{sub 12} while at x=0.050 the phase changes to the LiTiAlO{sub 4}. The diffraction patterns show that the angle shifted to the right as the increase of x which indicated that Al substitute Ti site. Percentage of Li{sub 4}Ti{sub 5}O{sub 12} phase at x=0 and x=0.025 was 97.8% and 96.8%, respectively. However, the lattice parameters, the unit cell volume, and the crystal density does not change significantly at x=0; x=0.025; and x=0.050. Based on the percentage of Li{sub 4}Ti{sub 5}O{sub 12} phase, the Al-doped Li at x=0 and x=0.025 is promising as a lithium battery anode.

  13. Residual and intentional n-type doping of ZnO thin films grown by metal-organic vapor phase epitaxy on sapphire and ZnO substrates

    NASA Astrophysics Data System (ADS)

    Brochen, Stéphane; Lafossas, Matthieu; Robin, Ivan-Christophe; Ferret, Pierre; Gemain, Frédérique; Pernot, Julien; Feuillet, Guy

    2014-03-01

    ZnO epilayers usually exhibit high n-type residual doping which is one of the reasons behind the difficulties to dope this material p-type. In this work, we aimed at determining the nature of the involved impurities and their potential role as dopant in ZnO thin films grown by metalorganic vapor phase epitaxy (MOVPE) on sapphire and ZnO substrates. In both cases, secondary ion mass spectroscopy (SIMS) measurements give evidence for a strong diffusion of impurities from the substrate to the epilayer, especially for silicon and aluminum. In the case of samples grown on sapphire substrates, aluminum follows Fick's diffusion law on a wide growth temperature range (800-1000°C). Thus, the saturation solubility and the diffusion coefficient of aluminum in ZnO single crystals have been determined. Furthermore, the comparison between SIMS impurity and effective dopant concentrations determined by capacitance-voltage measurements highlights, on one hand a substitutional mechanism for aluminum diffusion, and on the other hand that silicon acts as a donor in ZnO and not as an amphoteric impurity. In addition, photoluminescence spectra exhibit excitonic recombinations at the same energy for aluminum and silicon, indicating that silicon behaves as an hydrogenic donor in ZnO. Based on these experimental observations, ZnO thin films with a controlled n-type doping in the 1016-1019cm-3 range have been carried out. These results show that MOVPE growth is fully compatible with the achievement of highly Al-doped n-type thin films, but also with the growth of materials with low residual doping, which is a crucial parameter to address ZnO p-type doping issues.

  14. 40 CFR 721.5917 - Phenyl azo dye (generic).

    Code of Federal Regulations, 2011 CFR

    2011-07-01

    ... 40 Protection of Environment 31 2011-07-01 2011-07-01 false Phenyl azo dye (generic). 721.5917... Substances § 721.5917 Phenyl azo dye (generic). (a) Chemical substance and significant new uses subject to reporting. (1) The chemical substance identified generically as a phenyl azo dye (PMN P-02-17) is subject...

  15. 40 CFR 721.5917 - Phenyl azo dye (generic).

    Code of Federal Regulations, 2014 CFR

    2014-07-01

    ... 40 Protection of Environment 31 2014-07-01 2014-07-01 false Phenyl azo dye (generic). 721.5917... Substances § 721.5917 Phenyl azo dye (generic). (a) Chemical substance and significant new uses subject to reporting. (1) The chemical substance identified generically as a phenyl azo dye (PMN P-02-17) is subject...

  16. 40 CFR 721.5917 - Phenyl azo dye (generic).

    Code of Federal Regulations, 2010 CFR

    2010-07-01

    ... 40 Protection of Environment 30 2010-07-01 2010-07-01 false Phenyl azo dye (generic). 721.5917... Substances § 721.5917 Phenyl azo dye (generic). (a) Chemical substance and significant new uses subject to reporting. (1) The chemical substance identified generically as a phenyl azo dye (PMN P-02-17) is subject...

  17. 40 CFR 721.5917 - Phenyl azo dye (generic).

    Code of Federal Regulations, 2013 CFR

    2013-07-01

    ... 40 Protection of Environment 32 2013-07-01 2013-07-01 false Phenyl azo dye (generic). 721.5917... Substances § 721.5917 Phenyl azo dye (generic). (a) Chemical substance and significant new uses subject to reporting. (1) The chemical substance identified generically as a phenyl azo dye (PMN P-02-17) is subject...

  18. 40 CFR 721.5917 - Phenyl azo dye (generic).

    Code of Federal Regulations, 2012 CFR

    2012-07-01

    ... 40 Protection of Environment 32 2012-07-01 2012-07-01 false Phenyl azo dye (generic). 721.5917... Substances § 721.5917 Phenyl azo dye (generic). (a) Chemical substance and significant new uses subject to reporting. (1) The chemical substance identified generically as a phenyl azo dye (PMN P-02-17) is subject...

  19. 40 CFR 721.10460 - Azo nickel complex (generic).

    Code of Federal Regulations, 2014 CFR

    2014-07-01

    ... 40 Protection of Environment 31 2014-07-01 2014-07-01 false Azo nickel complex (generic). 721... Substances § 721.10460 Azo nickel complex (generic). (a) Chemical substance and significant new uses subject to reporting. (1) The chemical substance identified generically as azo nickel complex (PMN...

  20. 40 CFR 721.10460 - Azo nickel complex (generic).

    Code of Federal Regulations, 2013 CFR

    2013-07-01

    ... 40 Protection of Environment 32 2013-07-01 2013-07-01 false Azo nickel complex (generic). 721... Substances § 721.10460 Azo nickel complex (generic). (a) Chemical substance and significant new uses subject to reporting. (1) The chemical substance identified generically as azo nickel complex (PMN...

  1. 40 CFR 721.4594 - Substituted azo metal complex dye.

    Code of Federal Regulations, 2014 CFR

    2014-07-01

    ... 40 Protection of Environment 31 2014-07-01 2014-07-01 false Substituted azo metal complex dye. 721... Substances § 721.4594 Substituted azo metal complex dye. (a) Chemical substance and significant new uses subject to reporting. (1) The chemical substance identified generically as a substituted azo metal...

  2. 40 CFR 721.4594 - Substituted azo metal complex dye.

    Code of Federal Regulations, 2012 CFR

    2012-07-01

    ... 40 Protection of Environment 32 2012-07-01 2012-07-01 false Substituted azo metal complex dye. 721... Substances § 721.4594 Substituted azo metal complex dye. (a) Chemical substance and significant new uses subject to reporting. (1) The chemical substance identified generically as a substituted azo metal...

  3. 40 CFR 721.4594 - Substituted azo metal complex dye.

    Code of Federal Regulations, 2013 CFR

    2013-07-01

    ... 40 Protection of Environment 32 2013-07-01 2013-07-01 false Substituted azo metal complex dye. 721... Substances § 721.4594 Substituted azo metal complex dye. (a) Chemical substance and significant new uses subject to reporting. (1) The chemical substance identified generically as a substituted azo metal...

  4. 40 CFR 721.4594 - Substituted azo metal complex dye.

    Code of Federal Regulations, 2011 CFR

    2011-07-01

    ... 40 Protection of Environment 31 2011-07-01 2011-07-01 false Substituted azo metal complex dye. 721... Substances § 721.4594 Substituted azo metal complex dye. (a) Chemical substance and significant new uses subject to reporting. (1) The chemical substance identified generically as a substituted azo metal...

  5. 40 CFR 721.4594 - Substituted azo metal complex dye.

    Code of Federal Regulations, 2010 CFR

    2010-07-01

    ... 40 Protection of Environment 30 2010-07-01 2010-07-01 false Substituted azo metal complex dye. 721... Substances § 721.4594 Substituted azo metal complex dye. (a) Chemical substance and significant new uses subject to reporting. (1) The chemical substance identified generically as a substituted azo metal...

  6. Improved dye-sensitized solar cell with a ZnO nanotree photoanode by hydrothermal method.

    PubMed

    Kuo, Shou-Yi; Yang, Jui-Fu; Lai, Fang-I

    2014-01-01

    This study investigated the influence of ZnO nanostructures on dye adsorption to increase the photovoltaic conversion efficiency of solar cells. ZnO nanostructures were grown in both tree-like and nanorod (NR) arrays on an AZO/FTO film structure by using a hydrothermal method. The results were observed in detail using X-ray diffraction, field-emission scanning electron microscopy (FE-SEM), UV-visible spectrophotometry, electrochemical impedance spectroscopy, and solar simulation. The selective growth of tree-like ZnO was found to exhibit higher dye adsorption loading and conversion efficiency than ZnO NRs. The multiple 'branches' of 'tree-like nanostructures' increases the surface area for higher light harvesting and dye loading while reducing charge recombination. These improvements result in a 15% enhancement in power conversion. The objective of this study is to facilitate the development of a ZnO-based dye-sensitized solar cell.

  7. FIRST PRINCIPLES STUDY ON ELECTRONIC AND OPTICAL PROPERTIES OF Al-DOPED γ-Ge3N4

    NASA Astrophysics Data System (ADS)

    Ding, Y. C.; Xiang, A. P.; Zhu, X. H.; Luo, J.; Hu, X. F.

    2012-12-01

    First principles study of the structural, electronic and optical properties of Al-doped γ-Ge3N4 with different concentration has been reported using the pseudo-potential plane wave method within the generalized gradient approximation (GGA). The binding energy and the formation energy suggest that Aluminum (Al) impurities prefer to substitute Ge at octahedral sites. Different doping concentrations are considered and the corresponding density of states (DOS) are analyzed. Calculated DOS indicates that there are holes in the top of the valance band after doping, meaning a p-type doping. We study the complex dielectric function, the absorption coefficient, and the electron energy loss spectra. It is demonstrated that for the low Al concentration, the material exhibits the dielectric behavior and for the high Al concentration, the material has possibilities to exhibit some metallic behavior. The γ-Ge3N4 doped with Al has a much higher static dielectric constant than undoped γ-Ge3N4, implying its potential applications in electronics and optics.

  8. Significant enhancement of thermoelectric properties and metallization of Al-doped Mg{sub 2}Si under pressure

    SciTech Connect

    Morozova, Natalia V.; Korobeinikov, Igor V.; Karkin, Alexander E.; Shchennikov, Vladimir V.; Ovsyannikov, Sergey V. E-mail: sergey2503@gmail.com; Takarabe, Ken-ichi; Mori, Yoshihisa; Nakamura, Shigeyuki

    2014-06-07

    We report results of investigations of electronic transport properties and lattice dynamics of Al-doped magnesium silicide (Mg{sub 2}Si) thermoelectrics at ambient and high pressures to and beyond 15 GPa. High-quality samples of Mg{sub 2}Si doped with 1 at. % of Al were prepared by spark plasma sintering technique. The samples were extensively examined at ambient pressure conditions by X-ray diffraction studies, Raman spectroscopy, electrical resistivity, magnetoresistance, Hall effect, thermoelectric power (Seebeck effect), and thermal conductivity. A Kondo-like feature in the electrical resistivity curves at low temperatures indicates a possible magnetism in the samples. The absolute values of the thermopower and electrical resistivity, and Raman spectra intensity of Mg{sub 2}Si:Al dramatically diminished upon room-temperature compression. The calculated thermoelectric power factor of Mg{sub 2}Si:Al raised with pressure to 2–3 GPa peaking in the maximum the values as high as about 8 × 10{sup −3} W/(K{sup 2}m) and then gradually decreased with further compression. Raman spectroscopy studies indicated the crossovers near ∼5–7 and ∼11–12 GPa that are likely related to phase transitions. The data gathered suggest that Mg{sub 2}Si:Al is metallized under moderate pressures between ∼5 and 12 GPa.

  9. Characterization and Electrical Properties of Al-Doped Cu(In,Ga)Se2 Semiconductors with Various Cu Contents

    NASA Astrophysics Data System (ADS)

    Monsefi, Mehrdad; Kuo, Dong-Hau

    2014-04-01

    Cu(In,Ga)Se2 (CIGSe) semiconductor, which shows record photovoltaic conversion efficiencies near 20%, has become a leading material for thin-film solar cell applications. In this work, Al-doped CIGSe (Al-CIGSe) bulk material with different Cu contents has been prepared by a liquid-phase reactive sintering method at 650°C. Sintering of the Al-CIGSe bulk material has been carried out in the presence of Sb2S3 and Te. The bulk Cu x [(In0.6Al0.1)Ga0.3]Se2 semiconductor was n-type for x = 0.7 and p-type for higher Cu content. The defect chemistry of Al-CIGSe was studied by measuring the electrical properties as a function of copper content. The changes in the conductivity type and carrier concentration were related to defect states involving Cu vacancy and antisite defects of In Cu 2+ and Cu B 2 - in a Cu B IIISe2-type phase. The lattice parameters were in good agreement with other evidence for the existence of different defect states.

  10. Infrared surface plasmon resonance of AZO-Ag-AZO sandwich thin films.

    PubMed

    Guske, Joshua T; Brown, Jeff; Welsh, Alex; Franzen, Stefan

    2012-10-08

    Near-infrared surface plasmon resonance (SPR) spectra were collected of thin multilayer films of aluminum-doped zinc oxide (AZO) / silver (Ag) / AZO on BK-7 glass in the Kretschmann configuration in air, with the silver layer thickness varying from 5 nm to 50 nm. The SPR results were interpreted by modeling the reflectance with a five-layer transfer-matrix method, with the aid of a simplex algorithm. The model indicated that the Ag plasma frequency was significantly higher than the bulk value, possibly due to Schottky effect charge transfer from the AZO to the Ag layer. Continuous silver films were made as thin as 10 nm, indicating an inhibition of metal island formation for Ag deposited on AZO.

  11. Ionic pH and glucose sensors fabricated using hydrothermal ZnO nanostructures

    NASA Astrophysics Data System (ADS)

    Wang, Jyh-Liang; Yang, Po-Yu; Hsieh, Tsang-Yen; Juan, Pi-Chun

    2016-01-01

    Hydrothermally synthesized aluminum-doped ZnO (AZO) nanostructures have been adopted in extended-gate field-effect transistor (EGFET) sensors to demonstrate the sensitive and stable pH and glucose sensing characteristics of AZO-nanostructured EGFET sensors. The AZO-nanostructured EGFET sensors exhibited the following superior pH sensing characteristics: a high current sensitivity of 0.96 µA1/2/pH, a high linearity of 0.9999, less distortion of output waveforms, a small hysteresis width of 4.83 mV, good long-term repeatability, and a wide sensing range from pHs 1 to 13. The glucose sensing characteristics of AZO-nanostructured biosensors exhibited the desired sensitivity of 60.5 µA·cm-2·mM-1 and a linearity of 0.9996 up to 13.9 mM. The attractive characteristics of high sensitivity, high linearity, and repeatability of using ionic AZO-nanostructured EGFET sensors indicate their potential use as electrochemical and disposable biosensors.

  12. Thermoelectric properties of n-type Bi2Te2.7Se0.3 with addition of nano-ZnO:Al particles

    NASA Astrophysics Data System (ADS)

    Song, Shaowei; Wang, Jueling; Xu, Bo; Lei, Xiaobo; Jiang, Hongchuan; Jin, Yingrong; Zhang, Qinyong; Ren, Zhifeng

    2014-09-01

    Nano Al-doped ZnO (AZO) particles were added into n-type Bi2Te2.7Se0.3 alloys by ball milling and hot pressing method. The power factor was improved by ˜22% with addition of nano-AZO particles, accompanied with a ˜40% decrease of lattice thermal conductivity, leading to peak ZT of ˜0.85 at 323 K for Bi2Te2.7Se0.3(AZO)0.005 sample. The effects of the addition of AZO nanoparticles on the microstructure and thermoelectric transport properties are discussed.

  13. Comparison study of transparent RF-sputtered ITO/AZO and ITO/ZnO bilayers for near UV-OLED applications

    NASA Astrophysics Data System (ADS)

    Rezaie, Mahdiyar Nouri; Manavizadeh, Negin; Abadi, Ehsan Mohammadi Nasr; Nadimi, Ebrahim; Boroumand, Farhad Akbari

    2017-01-01

    Hybrid inorganic/organic light-emitting diodes have attracted much attention in the field of luminescent electronics due to the desired incorporation of high optoelectronic features of inorganic materials with the processability and variety of organic polymers. To generate and emit a near ultraviolet (N-UV) ray, wide band gap semiconductors can be applied in the organic light-emitting diodes (OLEDs). In this paper, zinc oxide (ZnO) and aluminum-doped ZnO (AZO) thin films are deposited by radio frequency (RF) sputtering above the ITO electrode and poly [2-methoxy-5-(2-ethyl-hexyloxy)-1,4-phenylene-vinylene] (MEH-PPV) conjugated polymer is utilized as a complementary p-type semiconductor in OLED structure. The impact of ZnO and AZO thickness on the structural, electrical, optical and morphological properties of ITO/AZO and ITO/ZnO bilayers are scrutinized and compared. Results show that with the enlargement of both ZnO and AZO film thickness, the physical properties are gradually improved resulting in the better quality of transparent conducting thin film. The average electrical resistivity of 8.4 × 10-4 and 1.1 × 10-3 Ω-cm, average sheet resistance of 32.9 and 42.3 Ω/sq, average transmittance of 88.3 and 87.3% and average FOM of 1.0 × 104 and 7.4 × 103 (Ω-cm)-1 are obtained for ITO/AZO and ITO/ZnO bilayers, respectively. Moreover, comparing the results indicates that the strain and the stress within the ITO/AZO bilayer are decreased nearly 19% with respect to ITO/ZnO bilayer which yield higher quality of crystal. Consequently, the physical properties of ITO/AZO bilayer is found to be superior regarding ITO/ZnO bilayer. For fabricated UV-OLEDs, the turn-on voltages, the characteristic energy (Et) and the total concentration of traps (Nt) for the devices with the structures of ITO/ZnO/MEH-PPV/Al and ITO/AZO/MEH-PPV/Al are obtained 12 and 14 V, 0.108 and 0.191 eV, 9.33 × 1016 and 5.22 × 1016 cm-3, respectively. Furthermore, according to the electroluminescence

  14. Growth and physiology of Clostridium perfringens wild-type and ΔazoC knockout: an azo dye exposure study.

    PubMed

    Morrison, Jessica M; John, Gilbert H

    2016-02-01

    Clostridium perfringens, a strictly anaerobic micro-organism and inhabitant of the human intestine, has been shown to produce the azoreductase enzyme AzoC, an NAD(P)H-dependent flavin oxidoreductase. This enzyme reduces azo dyes to aromatic amines, which are carcinogenic in nature. A significant amount of work has been completed that focuses on the activity of this enzyme; however, few studies have been completed that focus on the physiology of azo dye reduction. Dye reduction studies coupled with C. perfringens growth studies in the presence of ten different azo dyes and in media of varying complexities were completed to compare the growth rates and dye-reducing activity of C. perfringens WT cells, a C. perfringens ΔazoC knockout, and Bifidobacterium infantis, a non-azoreductase-producing control bacterium. The presence of azo dyes significantly increased the generation time of C. perfringens in rich medium, an effect that was not seen in minimal medium. In addition, azo dye reduction studies with the ΔazoC knockout suggested the presence of additional functional azoreductases in this medically important bacterium. Overall, this study addresses a major gap in the literature by providing the first look, to our knowledge, at the complex physiology of C. perfringens upon azo dye exposure and the effect that both azo dyes and the azoreductase enzyme have on growth.

  15. Plasmonic Three-Dimensional Transparent Conductor Based on Al-Doped Zinc Oxide-Coated Nanostructured Glass Using Atomic Layer Deposition

    DOE PAGES

    Malek, Gary A.; Aytug, Tolga; Liu, Qingfeng; ...

    2015-04-02

    Transparent nanostructured glass coatings, fabricated on glass substrates, with a unique three-dimensional (3D) architecture were utilized as the foundation for the design of plasmonic 3D transparent conductors. Transformation of the non-conducting 3D structure to a conducting 3D network was accomplished through atomic layer deposition of aluminum-doped zinc oxide (AZO). After AZO growth, gold nanoparticles (AuNPs) were deposited by electronbeam evaporation to enhance light trapping and decrease the overall sheet resistance. Field emission scanning electron microscopy and atomic force microcopy images revealed the highly porous, nanostructured morphology of the AZO coated glass surface along with the in-plane dimensions of the depositedmore » AuNPs. Sheet resistance measurements conducted on the coated samples verified that the electrical properties of the 3D network are comparable to that of the untextured two-dimensional AZO coated glass substrates. In addition, transmittance measurements of the glass samples coated with various AZO thicknesses showed preservation of the highly transparent nature of each sample, while the AuNPs demonstrated enhanced light scattering as well as light-trapping capability.« less

  16. Plasmonic Three-Dimensional Transparent Conductor Based on Al-Doped Zinc Oxide-Coated Nanostructured Glass Using Atomic Layer Deposition

    SciTech Connect

    Malek, Gary A.; Aytug, Tolga; Liu, Qingfeng; Wu, Judy

    2015-04-02

    Transparent nanostructured glass coatings, fabricated on glass substrates, with a unique three-dimensional (3D) architecture were utilized as the foundation for the design of plasmonic 3D transparent conductors. Transformation of the non-conducting 3D structure to a conducting 3D network was accomplished through atomic layer deposition of aluminum-doped zinc oxide (AZO). After AZO growth, gold nanoparticles (AuNPs) were deposited by electronbeam evaporation to enhance light trapping and decrease the overall sheet resistance. Field emission scanning electron microscopy and atomic force microcopy images revealed the highly porous, nanostructured morphology of the AZO coated glass surface along with the in-plane dimensions of the deposited AuNPs. Sheet resistance measurements conducted on the coated samples verified that the electrical properties of the 3D network are comparable to that of the untextured two-dimensional AZO coated glass substrates. In addition, transmittance measurements of the glass samples coated with various AZO thicknesses showed preservation of the highly transparent nature of each sample, while the AuNPs demonstrated enhanced light scattering as well as light-trapping capability.

  17. Degradation of azo dyes by environmental microorganisms and helminths

    SciTech Connect

    Kingthom Chung; Stevens, S.E. Jr. . Dept. of Biology)

    1993-11-01

    The degradation of azo dyes by environmental microorganisms, fungi, and helminths is reviewed. Azo dyes are used in a wide variety of products and can be found in the effluent of most sewage treatment facilities. Substantial quantities of these dyes have been deposited in the environment, particularly in streams and rivers. Azo dyes were shown to affect microbial activities and microbial population sizes in the sediments and in the water columns of aquatic habitats. Only a few aerobic bacteria have been found to reduce azo dyes under aerobic conditions, and little is known about the process. A substantial number of anaerobic bacteria capable of azo dye reduction have been reported. The enzyme responsible for azo dye reduction has been partially purified, and characterization of the enzyme is proceeding. The nematode Ascaris lumbricoides and the cestode Moniezia expanza have been reported to reduce azo dyes anaerobically. Recently the fungus Phanerochaete chrysoporium was reported to mineralize azo dyes via a peroxidation-mediated pathway. A possible degradation pathway for the mineralization of azo dye is proposed and future research needs are discussed.

  18. 40 CFR 721.9717 - Azo monochloro triazine reactive dye.

    Code of Federal Regulations, 2012 CFR

    2012-07-01

    ... 40 Protection of Environment 32 2012-07-01 2012-07-01 false Azo monochloro triazine reactive dye... Substances § 721.9717 Azo monochloro triazine reactive dye. (a) Chemical substance and significant new uses... reactive dye (PMN P-96-238) is subject to reporting under this section for the significant new...

  19. 40 CFR 721.9717 - Azo monochloro triazine reactive dye.

    Code of Federal Regulations, 2011 CFR

    2011-07-01

    ... 40 Protection of Environment 31 2011-07-01 2011-07-01 false Azo monochloro triazine reactive dye... Substances § 721.9717 Azo monochloro triazine reactive dye. (a) Chemical substance and significant new uses... reactive dye (PMN P-96-238) is subject to reporting under this section for the significant new...

  20. 40 CFR 721.9717 - Azo monochloro triazine reactive dye.

    Code of Federal Regulations, 2010 CFR

    2010-07-01

    ... 40 Protection of Environment 30 2010-07-01 2010-07-01 false Azo monochloro triazine reactive dye... Substances § 721.9717 Azo monochloro triazine reactive dye. (a) Chemical substance and significant new uses... reactive dye (PMN P-96-238) is subject to reporting under this section for the significant new...

  1. 40 CFR 721.9717 - Azo monochloro triazine reactive dye.

    Code of Federal Regulations, 2014 CFR

    2014-07-01

    ... 40 Protection of Environment 31 2014-07-01 2014-07-01 false Azo monochloro triazine reactive dye... Substances § 721.9717 Azo monochloro triazine reactive dye. (a) Chemical substance and significant new uses... reactive dye (PMN P-96-238) is subject to reporting under this section for the significant new...

  2. 40 CFR 721.9717 - Azo monochloro triazine reactive dye.

    Code of Federal Regulations, 2013 CFR

    2013-07-01

    ... 40 Protection of Environment 32 2013-07-01 2013-07-01 false Azo monochloro triazine reactive dye... Substances § 721.9717 Azo monochloro triazine reactive dye. (a) Chemical substance and significant new uses... reactive dye (PMN P-96-238) is subject to reporting under this section for the significant new...

  3. Modification of azo dyes by lactic acid bacteria

    Technology Transfer Automated Retrieval System (TEKTRAN)

    Identification of microorganisms capable of utilizing azo dyes have been an area of significant interest due to their role in the treatment of waste water derived from the textile industry. The ability of L. casei LA1133 and L. paracasei LA0471 to modify the azo dye tartrazine was recently document...

  4. An Interdisciplinary Experiment: Azo-Dye Metabolism by "Staphylococcus Aureus"

    ERIC Educational Resources Information Center

    Brocklesby, Kayleigh; Smith, Robert; Sharp, Duncan

    2012-01-01

    An interdisciplinary and engaging practical is detailed which offers great versatility in the study of a qualitative and quantitative metabolism of azo-dyes by "Staphylococcus aureus". This practical has broad scope for adaptation in the number and depth of variables to allow a focused practical experiment or small research project. Azo-dyes are…

  5. Photofabrication of surface relief gratings using post functionalized azo polymers

    SciTech Connect

    Tripathy, S.K.; Kumar, J.; Kim, D.Y.; Jiang, X.; Wang, X.; Li, L.; Sukwattanasinitt, M.; Sandman, D.J.

    1998-07-01

    A series of azobenzene funtionalized polymers has been synthesized by post polymerization azo coupling reaction. Photo-fabrication of surface relief gratings were studied on the polymer films. Epoxy based azo polymers were prepared by post azo coupling reaction to form polymers containing donor-acceptor type azo chromophores. The azo chromophores were designed to contain ionizable groups to impart self-assembling and photoprocessing capabilities to the polymers. The polymers containing 4-(4-(carboxylic acid)phenylazo)aniline chromophores can be directly photofabricated to form surface relief gratings with large surface modulations. Charge interactions had a strong influence on the details of the writing process. A new soluble polydiacetylene, post-functionalized with azobenzene groups was also prepared. Large amplitude surface gratings could be fabricated on this polydiacetylene film as well.

  6. 40 CFR 721.5930 - Phenylenebis[imino (chlorotriazinyl)imino(substituted naphthyl)azo(substituted phenyl)azo, sodium...

    Code of Federal Regulations, 2010 CFR

    2010-07-01

    ... 40 Protection of Environment 30 2010-07-01 2010-07-01 false Phenylenebis[imino (chlorotriazinyl)imino(substituted naphthyl)azo(substituted phenyl)azo, sodium salt (generic name). 721.5930 Section 721.5930 Protection of Environment ENVIRONMENTAL PROTECTION AGENCY (CONTINUED) TOXIC SUBSTANCES CONTROL ACT SIGNIFICANT NEW USES OF CHEMICAL...

  7. Thermoluminescence of Ge- and Al-Doped SiO2 Optical Fibers Subjected to 0.2-4.0 Gy External Photon Radiotherapeutic Dose

    NASA Astrophysics Data System (ADS)

    Hossain, I.; Wagiran, H.; Yaakob, N. H.

    2013-09-01

    In this work, we studied the thermoluminescence response of Ge- and Al-doped optical fibers, its linearity, energy dependence, and sensitivity. The Ge-doped optical fibers demonstrate useful TL properties and represent an excellent candidate for use in TL dosimetry of ionizing radiation. The TL response increases monotonically over a wide photon dose range, from 0.2 Gy to 4.0 Gy. The TL results for these fibers have been compared with similar TL data for phosphor TLD-100. Commercially available Al- and Ge-doped optical fibers have both been found to yield a linear dose-TL signal relationship, although the Al-doped fiber provides only 5 % of the sensitivity of the Ge-doped fibers. The TL characteristics of Ge-doped optical fiber, plus its small size (125 μm diameter), high flexibility, ease of handling, and low cost compared with other TL materials, make this commercial optical fiber a very promising TL material for use in medicine, industry, reactor operation, and a variety of other areas.

  8. Composition Optimization of Al-DOPING Lithium Manganese Oxide from Al2O3-Li2CO3-MnO2 Ternary System

    NASA Astrophysics Data System (ADS)

    He, Gang; Sun, Xinyan; Hong, Jianhe; He, Mingzhong

    2013-07-01

    In order to synthesize eutectic compound of Al doping lithium manganese oxide which can be used as cathode material in lithium battery, using γ-Al2O3, Li2CO3 and MnO2 as starting raw materials, the composition optimization research work has been done by the solid state synthesis method. A limited composition range was found in Al2O3-Li2CO3-MnO2 ternary system, in which the synthesized Al doping lithium manganese oxides have single spinel structure and good electrochemical performance. The results showed that the LiAl0.04Mn1.96O4 material presented better charge-discharge cycling behavior than pure LiMn2O4, and showed the best electrochemistry property among the compounds in the Al2O3-Li2O-Mn2O3 ternary system. LiAl0.04Mn1.96O4 still kept perfect cubic structure, but LiMn2O4 kept the coexistence of the cubic and tetragonal phases after 50 charge-discharge cycles.

  9. Decolorization of azo dyes by Geobacter metallireducens.

    PubMed

    Liu, Guangfei; Zhou, Jiti; Chen, Congcong; Wang, Jing; Jin, Ruofei; Lv, Hong

    2013-09-01

    Geobacter metallireducens was found to be capable of decolorizing several azo dyes with different structures to various extents. Pyruvate, ethanol, acetate, propionate, and benzoate could support 66.3 ± 2.6-93.7 ± 2.1 % decolorization of 0.1 mM acid red 27 (AR27) in 40 h. The dependence of the specific decolorization rate on AR27 concentration (25 to 800 μM) followed Michaelis-Menten kinetics (K m = 186.9 ± 1.4 μΜ, V max = 0.65 ± 0.02 μmol mg protein(-1) h(-1)). Enhanced AR27 decolorization was observed with the increase of cell concentrations ranging from 7.5 to 45 mgL(-1). AR27 decolorization by G. metallireducens was retarded by the presence of goethite, which competed electrons with AR27 and was reduced to Fe(II). The addition of low concentrations of humic acid (1-100 mgL(-1)) or 2-hydroxy-1,4-naphthoquinone (0.5-50 μM) could improve the decolorization performance of G. metallireducens. High-performance liquid chromatography analysis suggested reductive pathway to be responsible for decolorization. This was the first study on azo dye decolorization by Geobacter strain and might improve our understanding of natural attenuation and bioremediation of environments polluted by azo dyes.

  10. Transparent films for heterojunction Si photovoltaics.

    PubMed

    Kim, Joondong; Park, Yun Chang

    2013-06-01

    A heterojunction of Al-doped ZnO (AZO) and Si was applied as a photodiode. A Co-sputtering system was used to deposit a quality AZO film following an n-type Si thin film coating. Al is an n-doping element for ZnO and thus the Al content significantly controls the mobility and the crystalline structure of AZO films. In order to provide the highest mobility, the optimum Al-content was found to be 5.22 wt%. X-ray diffraction analysis also showed a release of the compressive stress for the Al-5.22 wt% AZO film. Due to the excellent electrical conductivity of the AZO film, the heterojunction diode showed an enhanced rectifying ratio of 87.7 from 59.9 of the bare Si diode according to the reduction of the series resistance. This scheme may provide a route to reducing the contact resistance and subsequently improving photovoltaic devices.

  11. Origin of Ferromagnetism in Al and Ni Co-doped ZnO Based DMS Materials

    NASA Astrophysics Data System (ADS)

    Murtaza, Saleem; Saadat, A. Siddiqi; Shahid, M. Ramay; Shahid, Atiq; Shahzad, Naseem

    2012-10-01

    Zn0.95Ni0.05O and Zn0.90Ni0.05Al0.05O compositions of nanocrystallites are synthesised using the well recognised auto-combustion technique. The x-ray diffraction patterns demonstrate the phase pure characteristic wurtzite-type crystal structure with space group P63mc in both the compositions. The elemental incorporation of Ni and Al contents into the ZnO structure is confirmed by energy dispersive x-ray analysis. The micrographs of scanning electron microscopy show an approximate ordered morphology. The electrical resistivity is observed to decrease with the rising temperature, depicting the characteristic semiconductor behaviour of the samples. The lower values of resistivity and ferromagnetic interactions in the Al-doped sample correspond to an increase of carrier's density. It is observed that the carrier mediated mechanism is mainly responsible for ferromagnetism in ZnO-based diluted magnetic semiconductors.

  12. Multiwavelength spectrophotometric determination of acidity constants of some azo dyes

    NASA Astrophysics Data System (ADS)

    Shamsipur, Mojtaba; Maddah, Bozorgmehr; Hemmateenejad, Bahram; Rouhani, Shohreh; Haghbeen, Kamaladin; Alizadeh, Kamal

    2008-06-01

    A multiwavelength spectrophotometric titration method was applied to study the acidity constants of some azo dyes in water. The UV-vis absorption spectra of azo dye solutions were recorded in the course of their pH-metric titration with a standard base solution. The protolytic equilibrium constants, spectral profiles, concentration diagrams and also the number of components have been calculated. The quantitative effects of the substituents on the acidity of the studied azo dyes were investigated by the linear free energy relationship (LFER) using Hammet sigma constant ( σ) and field and resonance effects of Kamlet and Taft ( f and ℜ, respectively).

  13. Multiwavelength spectrophotometric determination of acidity constants of some azo dyes.

    PubMed

    Shamsipur, Mojtaba; Maddah, Bozorgmehr; Hemmateenejad, Bahram; Rouhani, Shohreh; Haghbeen, Kamaladin; Alizadeh, Kamal

    2008-06-01

    A multiwavelength spectrophotometric titration method was applied to study the acidity constants of some azo dyes in water. The UV-vis absorption spectra of azo dye solutions were recorded in the course of their pH-metric titration with a standard base solution. The protolytic equilibrium constants, spectral profiles, concentration diagrams and also the number of components have been calculated. The quantitative effects of the substituents on the acidity of the studied azo dyes were investigated by the linear free energy relationship (LFER) using Hammet sigma constant (sigma) and field and resonance effects of Kamlet and Taft (f and Re, respectively).

  14. Enhanced anaerobic fermentation with azo dye as electron acceptor: simultaneous acceleration of organics decomposition and azo decolorization.

    PubMed

    Li, Yang; Zhang, Yaobin; Quan, Xie; Zhang, Jingxin; Chen, Shuo; Afzal, Shahzad

    2014-10-01

    Accumulation of hydrogen during anaerobic processes usually results in low decomposition of volatile organic acids (VFAs). On the other hand, hydrogen is a good electron donor for dye reduction, which would help the acetogenic conversion in keeping low hydrogen concentration. The main objective of the study was to accelerate VFA composition through using azo dye as electron acceptor. The results indicated that the azo dye serving as an electron acceptor could avoid H2 accumulation and accelerate anaerobic digestion of VFAs. After adding the azo dye, propionate decreased from 2400.0 to 689.5mg/L and acetate production increased from 180.0 to 519.5mg/L. It meant that the conversion of propionate into acetate was enhanced. Fluorescence in situ hybridization analysis showed that the abundance of propionate-utilizing acetogens with the presence of azo dye was greater than that in a reference without azo dye. The experiments via using glucose as the substrate further demonstrated that the VFA decomposition and the chemical oxygen demand (COD) removal increased by 319.7mg/L and 23.3% respectively after adding the azo dye. Therefore, adding moderate azo dye might be a way to recover anaerobic system from deterioration due to the accumulation of H2 or VFAs.

  15. Structural, Electrical, and Optical Properties of ZnO Film Used as Buffer Layer for CIGS Thin-Film Solar Cell.

    PubMed

    Choi, Eun Chang; Cha, Ji-Hyun; Jung, Duk-Young; Hong, Byungyou

    2016-05-01

    The CuIn(x)Ga(1-x)Se2 (CIGS) using the solution-based fabrication method is attractive for thin film solar cells because of its possibilities for large-area and low-cost production. ZnO films between transparent conductive oxide (TCO) and the CdS films can improve the performances of CIGS thin-film solar cells. In this study, we investigated the characteristics of ZnO film between TCO and CIGS layers in a solar cell (AZO/ZnO/CdS/CIGS/Mo), which were deposited at various thicknesses to investigate the role of the films in CIGS solar cells. It was confirmed that the conversion efficiency of a CIGS solar cell depends on the ZnO film. For a ZnO film thickness of 80 nm, the highest power conversion efficiency that a solar cell achieved was J(sc) of 18.73 mA/cm2.

  16. Highly efficient Yb-free Er-La-Al doped ultra-low NA large mode area single-trench fiber laser.

    PubMed

    Jain, D; Alam, S; Jung, Y; Barua, P; Velazquez, M N; Sahu, J K

    2015-11-02

    We demonstrate a 60µm core diameter Yb free Er-La-Al doped single-trench fiber having a 0.038 ultra-low-NA, fabricated using conventional MCVD process in conjunction with solution doping technique. Numerical simulations predict an effective single mode operation with effective area varying from 1,820µm(2) to 1,960µm(2) (taking bend-induced modal distortion into account) for different thicknesses of trenches and resonant rings at a constant bend radius of 25cm. Moreover, all solid structure favors easy cleaving and splicing. Experimental measurements demonstrate a robust effective single mode operation. Furthermore, with a 4%-4% laser cavity, this fiber shows a record efficiency of 46% with respect to the absorbed pump power.

  17. Impact of bimetal electrodes on dielectric properties of TiO2 and Al-doped TiO2 films.

    PubMed

    Kim, Seong Keun; Han, Sora; Jeon, Woojin; Yoon, Jung Ho; Han, Jeong Hwan; Lee, Woongkyu; Hwang, Cheol Seong

    2012-09-26

    Rutile structured Al-doped TiO(2) (ATO) and TiO(2) films were grown on bimetal electrodes (thin Ru/thick TiN, Pt, and Ir) for high-performance capacitors. The work function of the top Ru layer decreased on TiN and increased on Pt and Ir when it was thinner than ~2 nm, suggesting that the lower metal within the electrodes influences the work function of the very thin Ru layer. The use of the lower electrode with a high work function for bottom electrode eventually improves the leakage current properties of the capacitor at a very thin Ru top layer (≤2 nm) because of the increased Schottky barrier height at the interface between the dielectric and the bottom electrode. The thin Ru layer was necessary to achieve the rutile structured ATO and TiO(2) dielectric films.

  18. The impact of oxygen incorporation during intrinsic ZnO sputtering on the performance of Cu(In,Ga)Se{sub 2} thin film solar cells

    SciTech Connect

    Lee, Kkotnim; Ok, Eun-A; Park, Jong-Keuk; Kim, Won Mok; Baik, Young-Joon; Jeong, Jeung-hyun; Kim, Donghwan

    2014-08-25

    We investigated the impact of incorporating 2% oxygen during intrinsic ZnO sputtering on the efficiency of Cu(In,Ga)Se{sub 2} solar cells. The added oxygen not only reduced the optical absorption loss of the Al-doped ZnO overlaying layer but also improved the electronic properties of the underlying CdS/Cu(In,Ga)Se{sub 2} by increasing carrier density, lowering defect level, and increasing diffusion length, eventually enhancing J{sub SC}, V{sub OC}, and fill factor. It was found that the Na doping concentration was significantly increased around the CdS/Cu(In,Ga)Se{sub 2} junction due to the plasma-activated oxygen. The improved electronic properties are better explained by the increased Na concentration than simply the oxygen-related defect passivation.

  19. Photocatalytic degradation of organic dyes by Er3+: YAlO3/Co- and Fe-doped ZnO coated composites under solar irradiation

    NASA Astrophysics Data System (ADS)

    Chen, Yang; Lu, Chunxiao; Tang, Liang; Song, Yahui; Wei, Shengnan; Rong, Yang; Zhang, Zhaohong; Wang, Jun

    2016-12-01

    In this work, the Er3+: YAlO3/Co- and Fe-doped ZnO coated composites were prepared by the sol-gel method. Then, they were characterized by X-ray diffraction (XRD), scanning electron microscopy (SEM), transmission electron microscopy (TEM), and energy dispersive X-ray spectroscopy (EDX). Photo-degradation of azo fuchsine (AF) as a model dye under solar light irradiation was studied to evaluate the photocatalytic activity of the Er3+: YAlO3/Co- and Fe-doped ZnO coated composites. It was found that the photocatalytic activity of Co- and Fe-doped ZnO composites can be obviously enhanced by upconversion luminescence agent (Er3+: YAlO3). Besides, the photocatalytic activity of Er3+: YAlO3/Fe-doped ZnO is better than that of Er3+: YAlO3/Co-doped ZnO. The influence of experiment conditions, such as the concentration of Er3+: YAlO3, heat-treatment temperature and time on the photocatalytic activity of the Er3+: YAlO3/Co- and Fe-doped ZnO coated composites was studied. In addition, the effects of solar light irradiation time, dye initial concentration, Er3+: YAlO3/Co- and Fe-doped ZnO amount on the photocatalytic degradation of azo fuchsine in aqueous solution were investigated in detail. Simultaneously, some other organic dyes, such as Methyl Orange (MO), Rhodamine B (RM-B), Acid Red B (AR-B), Congo Red (CR), and Methyl Blue (MB) were also studied. The possible excitation principle of Er3+: YAlO3/Co- and Fe-doped ZnO coated composites under solar light irradiation and the photocatalytic degradation mechanism of organic dyes were discussed.

  20. Effect of annealing atmosphere on photoluminescence and gas sensing of solution-combustion-synthesized Al, Pd co-doped ZnO nanoparticles

    NASA Astrophysics Data System (ADS)

    Li, Yan; Liu, Min; Lv, Tan; Wang, Qiong; Zou, Yun-ling; Lian, Xiao-xue; Liu, Hong-peng

    2015-11-01

    Al, Pd co-doped ZnO nanoparticles (NPs) synthesized using a solution combustion method and subsequent annealing process under various atmospheres, including air, nitrogen, and hydrogen, were characterized using x-ray diffraction, energy-dispersive x-ray spectroscopy, field-emission scanning electron microscopy, transmission electron microscopy, and photoluminescence spectroscopy. The gas-sensing properties of the sensors based on the NPs were also examined. The results indicated that the Al, Pd co-doped ZnO NPs, with an average crystallite size of 10 nm, exhibited enhanced gas-sensing performance compared with that of pure ZnO and Al-doped ZnO. The response of the Al, Pd co-doped ZnO NPs annealed in N2 to ethanol (49.22) was nearly 5.7 times higher than that to acetone (8.61) and approximately 20 - 27 times higher than that to benzene (2.38), carbon monoxide (2.23), and methane (1.78), which demonstrates their excellent selectivity to ethanol versus other gases. This high ethanol response can be attributed to the combined effects of the small size, Schottky barrier, lattice defects, and catalysis. [Figure not available: see fulltext.

  1. Photoinduced ordering and anchoring properties of azo-dye films.

    PubMed

    Kiselev, Alexei D; Chigrinov, Vladimir; Huang, Dan Ding

    2005-12-01

    We study both theoretically and experimentally the anchoring properties of photoaligning azo-dye films in contact with a nematic liquid crystal depending on the photoinduced ordering of azo-dye molecules. In the mean field approximation, we found that the bare surface anchoring energy depends linearly on the azo-dye order parameter and the azimuthal anchoring strength decays to zero in the limit of vanishing photoinduced ordering. From the absorption dichroism spectra measured in azo-dye films that are prepared from an azo-dye derivative with polymerizable terminal groups we obtain the dependence of the dichroic ratio on the irradiation dose. We also measure the polar and azimuthal anchoring strengths in nematic liquid crystal (NLC) cells aligned by the azo-dye films and derive the anchoring strengths as functions of the dichroic ratio, which is proportional to the photoinduced order parameter. Although linear fitting of the experimental data for both anchoring strengths gives reasonable results, it, predicts vanishing of the azimuthal anchoring strength at some nonzero value of the azo-dye order parameter, in contradiction with theory. By using a simple phenomenological model we show that this discrepancy can be attributed to the difference between the surface and bulk order parameters in the films. The measured polar anchoring energy is found to be an order of magnitude higher than the azimuthal strength. Our theory suggests that the quadrupole term of the spherical harmonics expansion for the azo-dye-NLC intermolecular potential might be of importance for the understanding of this difference.

  2. Photoinduced mass transport in azo compounds

    NASA Astrophysics Data System (ADS)

    Klismeta, K.; Teteris, J.; Aleksejeva, J.

    2013-12-01

    The photoinduced changes of optical properties in azobenzene containing compound thin films were studied under influence of polarized and non-polarized 532 nm laser light. Under influence of light azo compounds experience trans-cis isomerisation process, that can be observed in the absorbance spectrum of the sample. If the light is linearly polarized, molecules align perpendicularly to the electric field vector and as a result photoinduced dichroism and birefringence is obtained. If a known lateral polarization modulation of the light beam is present, mass transport of the azobenzene containing compound occurs. By measuring the surface relief with a profilometer the direction of mass transport can be determined. The studies of this work show that direct holographic recording of surface relief gratings can be used in optoelectronics, telecommunications and data storage.

  3. Highly thermostable, flexible, transparent, and conductive films on polyimide substrate with an AZO/AgNW/AZO structure.

    PubMed

    Huang, Qijin; Shen, Wenfeng; Fang, Xingzhong; Chen, Guofei; Yang, Ye; Huang, Jinhua; Tan, Ruiqin; Song, Weijie

    2015-02-25

    Flexible transparent conductive films (TCFs) are used in a variety of optoelectronic devices. However, their use is limited due to poor thermostability. We report hybrid TCFs incorporation in both aluminum-doped zinc oxide (AZO) and silver nanowires (AgNWs). The layered AZO/AgNWs/AZO structure was deposited onto a transparent polyimide (PI) substrate and displayed excellent thermostability. When heated to 250 °C for 1 h, the change in resistivity (Rc) was less than 10% (Rc of pure AgNW film > 500) while retaining good photoelectric properties (Rsh = 8.6 Ohm/sq and T = 74.4%). Layering the AgNW network between AZO films decreased the surface roughness (Rrms < 8 nm) and enhances the mechanical flexibility of the hybrid films. The combination of these characteristics makes the hybrid film an excellent candidate for substrates of novel flexible optoelectronic devices which require high-temperature processing.

  4. Photobleaching effect in azo-dye containing epoxy resin films: the potentiality of carbon nanotubes as azo-dye dispensers

    NASA Astrophysics Data System (ADS)

    Díaz Costanzo, Guadalupe; Goyanes, Silvia; Ledesma, Silvia

    2015-04-01

    Azo-dye molecules may suffer from bleaching under certain illumination conditions. When this photoinduced process occurs, it generates an irreversible effect that is characterized by the loss of absorption of the dye molecule. Moreover, the well-known isomerization of azodye molecules does not occur anymore. In this work it is shown how the addition of a small amount of multi-walled carbon nanotubes (MWCNTs) helps to decrease the bleaching effect in a photosensitive guest-host azo-polymer film. Two different systems were fabricated using an epoxy resin as polymer matrix. An azo-dye, Disperse Orange 3, was used as photosensitive material in both systems and MWCNTs were added into one of them. The optical response of the polymeric systems was studied considering the degree of photoinduced birefringence. Photobleaching of the azo-dye was observed in all cases however, the effect is lower for the composite material containing 0.2 wt % MWCNTs. The weak interaction between MWCNTs and dye molecules is less favorable when the material is heated. The optical behavior of the heated composite material suggests that carbon nanotubes can be potentially used as azo dye dispensers. The results are interpreted in terms of the non-covalent interaction between azo-dye molecules and MWCNTs.

  5. Magnetically separable core–shell ZnFe{sub 2}O{sub 4}@ZnO nanoparticles for visible light photodegradation of methyl orange

    SciTech Connect

    Kulkarni, Suresh D. Kumbar, Sagar; Menon, Samvit G.; Choudhari, K.S.; Santhosh, C.

    2016-05-15

    Highlights: • Phase pure, magnetic ZnFe{sub 2}O{sub 4}@ZnO nanoparticles synthesized with excellent yield. • ZnFe{sub 2}O{sub 4}@ZnO displayed higher UV photocatalytic efficiency than ZnO nanoparticles. • First report on visible light photodegradation of methyl orange by ZnFe{sub 2}O{sub 4}@ZnO. • Excellent reusability of ZnFe{sub 2}O{sub 4}@ZnO nanoparticles observed for azo dye removal. - Abstract: Visible light photodegradation of aqueous methyl orange using magnetically separable core–shell ZnFe{sub 2}O{sub 4}@ZnO nanoparticles is reported. A combination of low temperature (190 °C) microwave synthesis and hydrothermal method were used to prepare phase pure material with excellent yield (95%). The magnetic separability, surface area of 41 m{sup 2}/g and visible light absorption make ZnFe{sub 2}O{sub 4}@ZnO nanoparticles a good solar photocatalyst. ZnFe{sub 2}O{sub 4}@ZnO displayed greater UV photocatalytic efficiency than ZnO owing to the generation of large number of electron-hole pairs. Visible light photodegradation of MO using ZnFe{sub 2}O{sub 4}@ZnO nanoparticles is reported for the first time. Higher first order rate constants under both UV and visible light for core-shell nanoparticles suggested their superiority over its individual oxides. The ZnFe{sub 2}O{sub 4}@ZnO showed excellent reusability with high photocatalytic efficiencies suggesting its suitability for solar photocatalytic applications.

  6. Atomic layer deposition of Al-doped ZnO/Al2O3 double layers on vertically aligned carbon nanofiber arrays.

    PubMed

    Malek, Gary A; Brown, Emery; Klankowski, Steven A; Liu, Jianwei; Elliot, Alan J; Lu, Rongtao; Li, Jun; Wu, Judy

    2014-05-14

    High-aspect-ratio, vertically aligned carbon nanofibers (VACNFs) were conformally coated with aluminum oxide (Al2O3) and aluminum-doped zinc oxide (AZO) using atomic layer deposition (ALD) in order to produce a three-dimensional array of metal-insulator-metal core-shell nanostructures. Prefunctionalization before ALD, as required for initiating covalent bonding on a carbon nanotube surface, was eliminated on VACNFs due to the graphitic edges along the surface of each CNF. The graphitic edges provided ideal nucleation sites under sequential exposures of H2O and trimethylaluminum to form an Al2O3 coating up to 20 nm in thickness. High-resolution transmission electron microscopy (HRTEM) and scanning electron microscopy images confirmed the conformal core-shell AZO/Al2O3/CNF structures while energy-dispersive X-ray spectroscopy verified the elemental composition of the different layers. HRTEM selected area electron diffraction revealed that the as-made Al2O3 by ALD at 200 °C was amorphous, and then, after annealing in air at 450 °C for 30 min, was converted to polycrystalline form. Nevertheless, comparable dielectric constants of 9.3 were obtained in both cases by cyclic voltammetry at a scan rate of 1000 V/s. The conformal core-shell AZO/Al2O3/VACNF array structure demonstrated in this work provides a promising three-dimensional architecture toward applications of solid-state capacitors with large surface area having a thin, leak-free dielectric.

  7. 40 CFR 721.980 - Sodium salt of azo acid dye.

    Code of Federal Regulations, 2011 CFR

    2011-07-01

    ... 40 Protection of Environment 31 2011-07-01 2011-07-01 false Sodium salt of azo acid dye. 721.980... Substances § 721.980 Sodium salt of azo acid dye. (a) Chemical substance and significant new uses subject to reporting. (1) The chemical substance identified generically as a sodium salt of azo acid dye (PMN...

  8. 40 CFR 721.980 - Sodium salt of azo acid dye.

    Code of Federal Regulations, 2010 CFR

    2010-07-01

    ... 40 Protection of Environment 30 2010-07-01 2010-07-01 false Sodium salt of azo acid dye. 721.980... Substances § 721.980 Sodium salt of azo acid dye. (a) Chemical substance and significant new uses subject to reporting. (1) The chemical substance identified generically as a sodium salt of azo acid dye (PMN...

  9. 40 CFR 721.2097 - Azo chromium complex dyestuff preparation (generic name).

    Code of Federal Regulations, 2013 CFR

    2013-07-01

    ... 40 Protection of Environment 32 2013-07-01 2013-07-01 false Azo chromium complex dyestuff... New Uses for Specific Chemical Substances § 721.2097 Azo chromium complex dyestuff preparation... substance identified generically as an azo chromium complex dyestuff preparation (PMN P-95-240) is...

  10. 40 CFR 721.2097 - Azo chromium complex dyestuff preparation (generic name).

    Code of Federal Regulations, 2012 CFR

    2012-07-01

    ... 40 Protection of Environment 32 2012-07-01 2012-07-01 false Azo chromium complex dyestuff... New Uses for Specific Chemical Substances § 721.2097 Azo chromium complex dyestuff preparation... substance identified generically as an azo chromium complex dyestuff preparation (PMN P-95-240) is...

  11. 40 CFR 721.2097 - Azo chromium complex dyestuff preparation (generic name).

    Code of Federal Regulations, 2011 CFR

    2011-07-01

    ... 40 Protection of Environment 31 2011-07-01 2011-07-01 false Azo chromium complex dyestuff... New Uses for Specific Chemical Substances § 721.2097 Azo chromium complex dyestuff preparation... substance identified generically as an azo chromium complex dyestuff preparation (PMN P-95-240) is...

  12. 40 CFR 721.2097 - Azo chromium complex dyestuff preparation (generic name).

    Code of Federal Regulations, 2010 CFR

    2010-07-01

    ... 40 Protection of Environment 30 2010-07-01 2010-07-01 false Azo chromium complex dyestuff... New Uses for Specific Chemical Substances § 721.2097 Azo chromium complex dyestuff preparation... substance identified generically as an azo chromium complex dyestuff preparation (PMN P-95-240) is...

  13. 40 CFR 721.2097 - Azo chromium complex dyestuff preparation (generic name).

    Code of Federal Regulations, 2014 CFR

    2014-07-01

    ... 40 Protection of Environment 31 2014-07-01 2014-07-01 false Azo chromium complex dyestuff... New Uses for Specific Chemical Substances § 721.2097 Azo chromium complex dyestuff preparation... substance identified generically as an azo chromium complex dyestuff preparation (PMN P-95-240) is...

  14. 40 CFR 721.10633 - Aromatic sulfonic acid amino azo dye salts (generic).

    Code of Federal Regulations, 2013 CFR

    2013-07-01

    ... 40 Protection of Environment 32 2013-07-01 2013-07-01 false Aromatic sulfonic acid amino azo dye... Specific Chemical Substances § 721.10633 Aromatic sulfonic acid amino azo dye salts (generic). (a) Chemical... as aromatic sulfonic acid amino azo dye salts (PMN P-12-276) is subject to reporting under...

  15. 40 CFR 721.10633 - Aromatic sulfonic acid amino azo dye salts (generic).

    Code of Federal Regulations, 2014 CFR

    2014-07-01

    ... 40 Protection of Environment 31 2014-07-01 2014-07-01 false Aromatic sulfonic acid amino azo dye... Specific Chemical Substances § 721.10633 Aromatic sulfonic acid amino azo dye salts (generic). (a) Chemical... as aromatic sulfonic acid amino azo dye salts (PMN P-12-276) is subject to reporting under...

  16. 40 CFR 721.980 - Sodium salt of azo acid dye.

    Code of Federal Regulations, 2013 CFR

    2013-07-01

    ... 40 Protection of Environment 32 2013-07-01 2013-07-01 false Sodium salt of azo acid dye. 721.980... Substances § 721.980 Sodium salt of azo acid dye. (a) Chemical substance and significant new uses subject to reporting. (1) The chemical substance identified generically as a sodium salt of azo acid dye (PMN...

  17. 40 CFR 721.980 - Sodium salt of azo acid dye.

    Code of Federal Regulations, 2014 CFR

    2014-07-01

    ... 40 Protection of Environment 31 2014-07-01 2014-07-01 false Sodium salt of azo acid dye. 721.980... Substances § 721.980 Sodium salt of azo acid dye. (a) Chemical substance and significant new uses subject to reporting. (1) The chemical substance identified generically as a sodium salt of azo acid dye (PMN...

  18. 40 CFR 721.980 - Sodium salt of azo acid dye.

    Code of Federal Regulations, 2012 CFR

    2012-07-01

    ... 40 Protection of Environment 32 2012-07-01 2012-07-01 false Sodium salt of azo acid dye. 721.980... Substances § 721.980 Sodium salt of azo acid dye. (a) Chemical substance and significant new uses subject to reporting. (1) The chemical substance identified generically as a sodium salt of azo acid dye (PMN...

  19. Electronic structure of Al- and Ga-doped ZnO films studied by hard X-ray photoelectron spectroscopy

    SciTech Connect

    Gabás, M.; Ramos Barrado, José R.; Torelli, P.; Barrett, N. T.

    2014-01-01

    Al- and Ga-doped sputtered ZnO films (AZO, GZO) are semiconducting and metallic, respectively, despite the same electronic valence structure of the dopants. Using hard X-ray photoelectron spectroscopy we observe that both dopants induce a band in the electronic structure near the Fermi level, accompanied by a narrowing of the Zn 3d/O 2p gap in the valence band and, in the case of GZO, a substantial shift in the Zn 3d. Ga occupies substitutional sites, whereas Al dopants are in both substitutional and interstitial sites. The latter could induce O and Zn defects, which act as acceptors explaining the semiconducting character of AZO and the lack of variation in the optical gap. By contrast, mainly substitutional doping is consistent with the metallic-like behavior of GZO.

  20. 40 CFR 721.10108 - Naphthalenedisulfonic acid, hydrozy-[[[(hydroxyl-disulfo-naphthaleneyl)azo]-alkyl(C=1-5...

    Code of Federal Regulations, 2011 CFR

    2011-07-01

    ...- -alkyl(C=1-5)-(sulfoalkoxy)cyclic]azo]-substituted azo-, metal salt (generic). 721.10108 Section 721.10108 Protection of Environment ENVIRONMENTAL PROTECTION AGENCY (CONTINUED) TOXIC SUBSTANCES CONTROL ACT... Naphthalenedisulfonic acid, hydrozy- -alkyl(C=1-5)-(sulfoalkoxy)cyclic]azo]-substituted azo-, metal salt (generic)....

  1. 40 CFR 721.10108 - Naphthalenedisulfonic acid, hydrozy-[[[(hydroxyl-disulfo-naphthaleneyl)azo]-alkyl(C=1-5...

    Code of Federal Regulations, 2014 CFR

    2014-07-01

    ...- -alkyl(C=1-5)-(sulfoalkoxy)cyclic]azo]-substituted azo-, metal salt (generic). 721.10108 Section 721.10108 Protection of Environment ENVIRONMENTAL PROTECTION AGENCY (CONTINUED) TOXIC SUBSTANCES CONTROL ACT... Naphthalenedisulfonic acid, hydrozy- -alkyl(C=1-5)-(sulfoalkoxy)cyclic]azo]-substituted azo-, metal salt (generic)....

  2. 40 CFR 721.10108 - Naphthalenedisulfonic acid, hydrozy-[[[(hydroxyl-disulfo-naphthaleneyl)azo]-alkyl(C=1-5...

    Code of Federal Regulations, 2012 CFR

    2012-07-01

    ...- -alkyl(C=1-5)-(sulfoalkoxy)cyclic]azo]-substituted azo-, metal salt (generic). 721.10108 Section 721.10108 Protection of Environment ENVIRONMENTAL PROTECTION AGENCY (CONTINUED) TOXIC SUBSTANCES CONTROL ACT... Naphthalenedisulfonic acid, hydrozy- -alkyl(C=1-5)-(sulfoalkoxy)cyclic]azo]-substituted azo-, metal salt (generic)....

  3. A first-principles study on the adsorption behavior of amphetamine on pristine, P- and Al-doped B12N12 nano-cages

    NASA Astrophysics Data System (ADS)

    Bahrami, Aidin; Seidi, Shahram; Baheri, Tahmineh; Aghamohammadi, Mohammad

    2013-12-01

    The first-principles computations using density functional theory (DFT) calculations at the M062X/6-311++G** level have been applied to scrutinize the adsorption behavior of amphetamine (AMP) molecule on the external surface of pristine, P- and Al-doped B12N12 nano-cages. In order to gain insight into the binding features of pristine and doped B12N12 complexes as adsorbent with AMP, the structural and electronic parameters as well as the Atoms in Molecules (AIM) properties were examined. The results showed that AMP prefers to adsorb via its nitrogen atom on the Lewis acid sites of B and Al atoms of the nano-cages. On the basis of calculated density of states, the interaction of AMP with the external wall of B12N12 leads to the remarkable differences in their conductivities. Presence of polar solvent increases the AMP adsorption on the nano-cage. In addition, AIM based analyses indicated an electrostatic nature for N-B interaction in Amph-B12N12 and partial covalent for N-Al in AMP-B11AlN12. Based on calculated results, the B12N12 and B11AlN12 nano-cages are expected to be a potential efficient adsorbent as well as sensors for adsorption of AMP in environmental systems.

  4. 2H and 27Al solid-state NMR study of the local environments in Al-doped 2-line ferrihydrite, goethite, and lepidocrocite

    DOE PAGES

    Kim, Jongsik; Ilott, Andrew J.; Middlemiss, Derek S.; ...

    2015-05-13

    Although substitution of aluminum into iron oxides and oxyhydroxides has been extensively studied, it is difficult to obtain accurate incorporation levels. Assessing the distribution of dopants within these materials has proven especially challenging because bulk analytical techniques cannot typically determine whether dopants are substituted directly into the bulk iron oxide or oxyhydroxide phase or if they form separate, minor phase impurities. These differences have important implications for the chemistry of these iron-containing materials, which are ubiquitous in the environment. In this work, 27Al and 2H NMR experiments are performed on series of Al-substituted goethite, lepidocrocite, and 2-line ferrihydrite in ordermore » to develop an NMR method to track Al substitution. The extent of Al substitution into the structural frameworks of each compound is quantified by comparing quantitative 27Al MAS NMR results with those from elemental analysis. Magnetic measurements are performed for the goethite series to compare with NMR measurements. Static 27Al spin–echo mapping experiments are used to probe the local environments around the Al substituents, providing clear evidence that they are incorporated into the bulk iron phases. As a result, predictions of the 2H and 27Al NMR hyperfine contact shifts in Al-doped goethite and lepidocrocite, obtained from a combined first-principles and empirical magnetic scaling approach, give further insight into the distribution of the dopants within these phases.« less

  5. Improved dye-sensitized solar cell with a ZnO nanotree photoanode by hydrothermal method

    PubMed Central

    2014-01-01

    This study investigated the influence of ZnO nanostructures on dye adsorption to increase the photovoltaic conversion efficiency of solar cells. ZnO nanostructures were grown in both tree-like and nanorod (NR) arrays on an AZO/FTO film structure by using a hydrothermal method. The results were observed in detail using X-ray diffraction, field-emission scanning electron microscopy (FE-SEM), UV-visible spectrophotometry, electrochemical impedance spectroscopy, and solar simulation. The selective growth of tree-like ZnO was found to exhibit higher dye adsorption loading and conversion efficiency than ZnO NRs. The multiple ‘branches’ of ‘tree-like nanostructures’ increases the surface area for higher light harvesting and dye loading while reducing charge recombination. These improvements result in a 15% enhancement in power conversion. The objective of this study is to facilitate the development of a ZnO-based dye-sensitized solar cell. PMID:24872799

  6. Photoinduced translational molecular mobility in solid nanostructured azo dye films

    SciTech Connect

    Ezhov, A A; Kozenkov, V M; Magnitskii, Sergey A; Nagorskii, Nikolay M; Panov, Vladimir I

    2011-11-30

    A new mechanism controlling the molecular motion in thin azo-containing films during a photoinduced change in the surface nanorelief is found. It is shown experimentally that exposure of a solid AD-1 azo dye, deposited on a glass substrate, to incoherent linearly polarised light leads to formation of nanostructures with a characteristic size of 200 nm, which are similar to droplets of melt of this dye on the same substrate. It is shown that photoinduced mass transport in a solid AD-1 azo dye film can be explained by the mobility of molecules related to their trans-cis-photoisomerisation, which leads to film softening with subsequent formation of spherical protrusions under surface tension forces.

  7. Ferromagnetic behavior due to Al3+ doping into ZnO nanorods

    NASA Astrophysics Data System (ADS)

    Yingsamphancharoen, T.; Nakarungsee, P.; Herng, T. S.; Ding, J.; Tang, I. M.; Thongmee, S.

    2016-12-01

    Al doped ZnO nanorods (NR's) having Al concentration up to 10 mol% were grown by the hydrothermal method. XRD measurements showed that the Al substituted ZnO NR's maintained the hexagonal wurtzite structure for all levels of Al substitution. EDX measurements of the ZnO:Al NR's indicated that the Al substitution created additional Zn vacancies in the wurtzite structure which is reflected in the enhanced photoluminescence emission in the visible light spectra between 450 and 550 nm of the more heavily doped ZnO:Al NR's. SEM images of the heavier doped ZnO:Al nanorods showed nano nodules being formed on the surface of the hexagonal shaped NR's. The saturation magnetizations of the ZnO:Al NR's as measured by a SQUID magnetometer increased to 10.66×10-4 emu/g as more Al was substituted in. The hysteresis loops for the ZnO:Al NR's began to exhibit novel effects, such as horizontal shift (exchange bias field 0.0382 kOe for the 9 mol% NR) and butterfly shapes.

  8. Advanced oxidation processes in azo dye wastewater treatment.

    PubMed

    Papić, Sanja; Koprivanac, Natalija; Bozić, Ana Loncarić; Vujević, Dinko; Dragicević, Savka Kusar; Kusić, Hrvoje; Peternel, Igor

    2006-06-01

    The chemical degradation of synthetic azo dyes color index (C.I.) Acid Orange 7, C.I. Direct Orange 39, and C.I. Mordant Yellow 10 has been studied by the following advanced oxidation processes: Fenton, Fenton-like, ozonation, peroxone without or with addition of solid particles, zeolites HY, and NH4ZSM5. Spectrophotometric (UV/visible light spectrum) and total organic carbon measurements were used for determination of process efficiency and reaction kinetics. The degradation rates are evaluated by determining their rate constants. The different hydroxyl radical generation processes were comparatively studied, and the most efficient experimental conditions for the degradation of organic azo dyes solutions were determined.

  9. Transparent CH3NH3SnCl3/Al-ZnO p-n heterojunction diode

    NASA Astrophysics Data System (ADS)

    Kumar, Sunil; Ansari, Mohd. Zubair; Khare, Neeraj

    2016-05-01

    A p-type Organic inorganic tin chloride (CH3NH3SnCl3) perovskite thin film has been synthesized by solution method. An n-type 1% Al doped ZnO (AZO) film has been deposited on FTO substrate by ultrasonic assisted chemical vapor deposition technique. A transparent CH3NH3SnCl3/AZO p-n heterojunction diode has been fabricated by spin coating technique. CH3NH3SnCl3/AZO p-n heterojunction shows 75% transparency in the visible region. I-V characteristic of CH3NH3SnCl3/AZO p-n heterojunction shows rectifying behavior of the diode. The diode parameters calculated as ideality factor η=2.754 and barrier height V= 0.76 eV. The result demonstrates the potentiality of CH3NH3SnCl3/AZO p-n heterojunction for transparent electronics.

  10. Non-classical azoreductase secretion in Clostridium perfringens in response to sulfonated azo dye exposure.

    PubMed

    Morrison, Jessica M; John, Gilbert H

    2015-08-01

    Clostridium perfringens, a strictly anaerobic microorganism and inhabitant of the human intestine, has been shown to produce an azoreductase enzyme (AzoC), an NADH-dependent flavin oxidoreductase. This enzyme reduces azo dyes into aromatic amines, which can be carcinogenic. A significant amount of work has been completed on the activity of AzoC. Despite this, much is still unknown, including whether azoreduction of these dyes occurs intracellularly or extracellulary. A physiological study of C. perfringens involving the effect of azo dye exposure was completed to answer this question. Through exposure studies, azo dyes were found to cause cytoplasmic protein release, including AzoC, from C. perfringens in dividing and non-dividing cells. Sulfonation (negative charge) of azo dyes proved to be the key to facilitating protein release of AzoC and was found to be azo-dye-concentration-dependent. Additionally, AzoC was found to localize to the Gram-positive periplasmic region. Using a ΔazoC knockout mutant, the presence of additional azoreductases in C. perfringens was suggested. These results support the notion that the azoreduction of these dyes may occur extracellularly for the commensal C. perfringens in the intestine.

  11. Optical and piezoelectric properties of p-type ZnO nanowires on transparent flexible substrate for energy harvesting

    NASA Astrophysics Data System (ADS)

    Liu, Guocheng; Tam, Man Chun; Hu, Lilei; EI-Rayes, Karim; Guo, Qiuquan; Yang, Jun; Mrad, Nezih; Ban, Dayan

    2014-09-01

    High quality, controlled-structure nanowires (NWs), grown on a transparent flexible substrate, have attracted great interest as a mean of harvesting solar and mechanical energy. Clarifying their optical and piezoelectric properties is essential for this application. In this paper, vertically aligned lithium (Li) doped p-type ZnO NWs were grown, on a micro-patterned transparent flexible polyethylene naphthalate (PEN) substrate, by electrochemical deposition at 88 °C. The substrate was coated with aluminum-doped ZnO (AZO) thin layer, which served as a good seed layer and a transparent conductive oxide layer. Varying the seed layer thickness gave control of the individual NWs' diameter, density and alignment. The effect of doping on the optical band-gap, crystalline quality and Schottky barrier were investigated by X-ray diffraction (XRD) spectroscopy and piezoelectric characterization. The piezoelectric polarization induced piezo-potential in strained ZnO NWs can drive the flow of electrons without an applied electric bias, thus can be used to harvest mechanical energy and convert it into electricity. To prove this concept, flexible piezoelectric energy harvesters based on an array of ZnO NWs were fabricated. Results show that the patterned p-type NW-based energy harvester produces 26-fold output voltage and 19-fold current compared to the conventional un-doped ZnO NW energy harvester from the same acceleration input.

  12. Highly transparent conductive AZO/Zr50Cu50/AZO films in wide range of visible and near infrared wavelength grown by pulsed laser deposition

    NASA Astrophysics Data System (ADS)

    Cheng, Jingyun; Cao, Guohua; Zong, Haitao; Kang, Chaoyang; Jia, Erguang; Zhang, Baoqing; Li, Ming

    Novel AZO/Zr50Cu50/AZO tri-layer transparent conductive films with excellent transmittance in both visible and near infrared region were successfully prepared by pulsed laser deposition on glass substrates. The electrical and optical properties were investigated at various Zr50Cu50 thicknesses. As the AZO thickness was fixed at 50 nm and Zr50Cu50 thickness was varied between 1 and 18 nm, it was found that AZO (50 nm)/Zr50Cu50/AZO (50 nm) tri-layer films exhibited good conductivity and high transmittance in both visible and near infrared wavelength. Additionally, both the electrical and optical properties of AZO (50 nm)/Zr50Cu50 (2 nm)/AZO (50 nm) tri-layer films were found to be sensitive to the growth temperature. In this work, the lowest sheet resistance (43 Ω/□) and relatively high transmittance (∼80%) in the range of 400-2000 nm were achieved while the growth temperature was 350 °C. Furthermore, the AZO (50 nm)/Zr50Cu50 (2 nm)/AZO (50 nm) thin film deposited at 350 °C exhibits the highest figure of merit of 1.42 × 10-3 Ω-1, indicating that the multilayer is promising for coated glasses and thin film solar cells.

  13. Amplified spontaneous emission from ZnO in n-ZnO/ZnO nanodots-SiO(2) composite/p-AlGaN heterojunction light-emitting diodes.

    PubMed

    Shih, Ying Tsang; Wu, Mong Kai; Li, Wei Chih; Kuan, Hon; Yang, Jer Ren; Shiojiri, Makoto; Chen, Miin Jang

    2009-04-22

    This study demonstrates amplified spontaneous emission (ASE) of the ultraviolet (UV) electroluminescence (EL) from ZnO at lambda~380 nm in the n-ZnO/ZnO nanodots-SiO(2) composite/p- Al(0.12)Ga(0.88)N heterojunction light-emitting diode. A SiO(2) layer embedded with ZnO nanodots was prepared on the p-type Al(0.12)Ga(0.88)N using spin-on coating of SiO(2) nanoparticles followed by atomic layer deposition (ALD) of ZnO. An n-type Al-doped ZnO layer was deposited upon the ZnO nanodots-SiO(2) composite layer also by the ALD technique. High-resolution transmission electron microscopy (HRTEM) reveals that the ZnO nanodots embedded in the SiO(2) matrix have diameters of 3-8 nm and the wurtzite crystal structure, which allows the transport of carriers through the thick ZnO nanodots-SiO(2) composite layer. The high quality of the n-ZnO layer was manifested by the well crystallized lattice image in the HRTEM picture and the low-threshold optically pumped stimulated emission. The low refractive index of the ZnO nanodots-SiO(2) composite layer results in the increase in the light extraction efficiency from n-ZnO and the internal optical feedback of UV EL into n-ZnO layer. Consequently, significant enhancement of the UV EL intensity and super-linear increase in the EL intensity, as well as the spectral narrowing, with injection current were observed owing to ASE in the n-ZnO layer.

  14. Real space pseudopotential calculations for size trends in Ga- and Al-doped zinc oxide nanocrystals with wurtzite and zincblende structures

    SciTech Connect

    Bobbitt, N. Scott; Kim, Minjung; Sai, Na; Marom, Noa; Chelikowsky, James R.

    2014-09-07

    Zinc oxide is often used as a popular inexpensive transparent conducting oxide. Here, we employ density functional theory and local density approximation to examine the effects of quantum confinement in doped nanocrystals of this material. Specifically, we examine the addition of Ga and Al dopants to ZnO nanocrystals on the order of 1.0 nm. We find that the inclusion of these dopants is energetically less favorable in smaller particles and that the electron binding energy, which is associated with the dopant activation, decreases with the nanocrystal size. We find that the introduction of impurities does not alter significantly the Kohn-Sham eigenspectrum for small nanocrystals of ZnO. The added electron occupies the lowest existing state, i.e., no new bound state is introduced in the gap. We verify this assertion with hybrid functional calculations.

  15. Toxicity assessment and microbial degradation of azo dyes.

    PubMed

    Puvaneswari, N; Muthukrishnan, J; Gunasekaran, P

    2006-08-01

    Toxic effluents containing azo dyes are discharged from various industries and they adversely affect water resources, soil fertility, aquatic organisms and ecosystem integrity. They pose toxicity (lethal effect, genotoxicity, mutagenicity and carcinogenicity) to aquatic organisms (fish, algae, bacteria, etc.) as well as animals. They are not readily degradable under natural conditions and are typically not removed from waste water by conventional waste water treatment systems. Benzidine based dyes have long been recognized as a human urinary bladder carcinogen and tumorigenic in a variety of laboratory animals. Several microorganisms have been found to decolourize, transform and even to completely mineralize azo dyes. A mixed culture of two Pseudomonas strains efficiently degraded mixture of 3-chlorobenzoate (3-CBA) and phenol/cresols. Azoreductases of different microorganisms are useful for the development of biodegradation systems as they catalyze reductive cleavage of azo groups (-N=N-) under mild conditions. In this review, toxic impacts of dyeing factory effluents on plants, fishes, and environment, and plausible bioremediation strategies for removal of azo dyes have been discussed.

  16. Ion irradiation of AZO thin films for flexible electronics

    NASA Astrophysics Data System (ADS)

    Boscarino, Stefano; Torrisi, Giacomo; Crupi, Isodiana; Alberti, Alessandra; Mirabella, Salvatore; Ruffino, Francesco; Terrasi, Antonio

    2017-02-01

    Aluminum doped Zinc oxide (AZO) is a promising transparent conductor for solar cells, displays and touch-screen technologies. The resistivity of AZO is typically improved by thermal annealing at temperatures not suitable for plastic substrates. Here we present a non-thermal route to improve the electrical and structural properties of AZO by irradiating the TCO films with O+ or Ar+ ion beams (30-350 keV, 3 × 1015-3 × 1016 ions/cm2) after the deposition on glass and flexible polyethylene naphthalate (PEN). X-ray diffraction, optical absorption, electrical measurements, Rutherford Backscattering Spectrometry and Atomic Force Microscopy evidenced an increase of the crystalline grain size and a complete relief of the lattice strain upon ion beam irradiation. Indeed, the resistivity of thin AZO films irradiated at room temperature decreased of two orders of magnitude, similarly to a thermal annealing at 400 °C. We also show that the improvement of the electrical properties does not simply depend on the strain or polycrystalline domain size, as often stated in the literature.

  17. Epitaxial ZnO/LiNbO{sub 3}/ZnO stacked layer waveguide for application to thin-film Pockels sensors

    SciTech Connect

    Akazawa, Housei Fukuda, Hiroshi

    2015-05-15

    We produced slab waveguides consisting of a LiNbO{sub 3} (LN) core layer that was sandwiched with Al-doped ZnO cladding layers. The ZnO/LN/ZnO stacked layers were grown on sapphire C-planes by electron cyclotron resonance (ECR) plasma sputtering and were subjected to structural, electrical, and optical characterizations. X-ray diffraction confirmed that the ZnO and LN layers were epitaxial without containing misoriented crystallites. The presence of 60°-rotational variants of ZnO and LN crystalline domains were identified from X-ray pole figures. Cross-sectional transmission electron microscopy images revealed a c-axis orientated columnar texture for LN crystals, which ensured operation as electro-optic sensors based on optical anisotropy along longitudinal and transversal directions. The interfacial roughness between the LN core and ZnO bottom layers as well as that between the ZnO top and the LN core layers was less than 20 nm, which agreed with surface images observed with atomic force microscopy. Outgrowth of triangular LN crystalline domains produced large roughness at the LN film surface. The RMS roughness of the LN film surface was twice that of the same structure grown on sapphire A-planes. Vertical optical transmittance of the stacked films was higher than 85% within the visible and infrared wavelength range. Following the approach adopted by Teng and Man [Appl. Phys. Lett. 56, 1734 (1990)], ac Pockels coefficients of r{sub 33} = 24-28 pm/V were derived for c-axis oriented LN films grown on low-resistive Si substrates. Light propagation within a ZnO/LN/ZnO slab waveguide as well as within a ZnO single layer waveguide was confirmed. The birefringence of these waveguides was 0.11 for the former and 0.05 for the latter.

  18. Treatment of azo dye-containing synthetic textile dye effluent using sulfidogenic anaerobic baffled reactor.

    PubMed

    Ozdemir, Sebnem; Cirik, Kevser; Akman, Dilek; Sahinkaya, Erkan; Cinar, Ozer

    2013-10-01

    This study aims at investigating azo dye reduction performance of a sulfidogenic anaerobic baffled reactor (ABR) for around 400 days. ABR was operated at 30 °C in a temperature-controlled room and hydraulic retention time (HRT) was kept constant at 2 days. The robustness of ABR was assessed under varying azo dye loadings and COD/sulfate ratios. Additionally, oxygen was supplied (1-2 L air/m(3)reactor min) to the last compartment to investigate the removal of azo dye breakdown products. ABR performed well in terms of COD, sulfate and azo dye removals throughout the reactor operation. Maximum azo dye, COD and sulfate removals were 98%, 98% and 93%, respectively, at COD/sulfate ratio of 0.8. Aeration created different redox conditions in last compartment, which enhanced the removal of COD and breakdown products. The adverse effects of aeration on azo dye reduction were eliminated thanks to the compartmentalized structure of the ABR.

  19. Azo-Carbazole Polymethacrylates as Single-Component Electro-Optic Materials

    DTIC Science & Technology

    2007-11-02

    previously. Sample Preparation The n-variable spacer poly( azo carbazole) (PAC-n) polymers used in this study were cast as films onto transparent...electric field poling and photoinduced birefringence. Once an electro-optic thin film sandwich of azo polymer is brought to Tg , application of an...and coefficients obtained from curve fitting. Figure 1. Azo -carbazole polymer cast as a thin film (top), an electro-optic sandwich (center), and an

  20. Biosorption of Azo dyes by spent Rhizopus arrhizus biomass

    NASA Astrophysics Data System (ADS)

    Salvi, Neeta A.; Chattopadhyay, S.

    2016-05-01

    In the present study, spent Rhizopus arrhizus biomass was used for the removal of six azo dyes from aqueous solutions. The dye removal capacity of the biomass was evaluated by conducting batch tests as a function of contact time, biomass dosage, pH and initial dye concentrations. The pseudo-second-order kinetic model fitted well with the experimental data with correlation coefficients greater than 0.999, suggesting that chemisorptions might be the rate limiting step. The equilibrium sorption data showed good fit to the Langmuir isotherm model. Among the six dyes tested, the maximum monolayer adsorption capacity for fast red A and metanil yellow was found to be 108.8 and 128.5 mg/g, respectively. These encouraging results suggest that dead Rhizopus arrhizus biomass could be a potential biomaterial for the removal of azo dyes from aqueous dye solution.

  1. Direct observation of athermal photofluidisation in azo-polymer films.

    PubMed

    Hurduc, Nicolae; Donose, Bogdan C; Macovei, Alina; Paius, Cristina; Ibanescu, Constanta; Scutaru, Dan; Hamel, Matthieu; Branza-Nichita, Norica; Rocha, Licinio

    2014-07-14

    The surface relief gratings (SRGs) can be generated when azo-polymer films are exposed to laser beam interference as a result of mass migration. Despite considerable research effort over the past two decades this complex phenomenon remains incompletely understood. Here we show, for the first time, the athermal photofluidisation of azo-polysiloxane films exposed to 488 nm light, directly monitored by optical microscopy. A process of surface relief erasure occurring in parallel with its inscription was also observed during laser irradiation. We therefore propose a new mechanism of SRG formation, based on three different processes: (1) the polymer photo-fluidization in illuminated regions, (2) the mass displacement from illuminated to dark regions and (3) the inverse mass displacement, from dark to illuminated regions. The mechanical properties of the films during UV light irradiation were investigated by classical rheology and, for the first time, by using amplitude modulation-frequency modulation atomic force microscopy (AM-FM AFM).

  2. Electroenzymatic degradation of azo dye using an immobilized peroxidase enzyme.

    PubMed

    Kim, Gha-Young; Lee, Ki-Beom; Cho, Seung-Hee; Shim, Joonmok; Moon, Seung-Hyeon

    2005-11-11

    Azo dyes are largely resistant to biodegradation and persist in conventional wastewater treatment processes. Combining enzymatic catalysis and the electrochemical generation of hydrogen peroxide (H2O2), an electroenzymatic process was developed, which is a potential alternative to traditional processes. In this study, an electroenzymatic method that uses an immobilized horseradish peroxidase enzyme (HRP), was investigated to degrade orange II (azo dye) within a two-compartment packed-bed flow reactor. To evaluate the electroenzymatic degradation of orange II, electrolytic experiments were carried out with 0.42 U/mL HRP at -0.5 V. It was found that removal of orange II was partly due to its adsorption to the graphite felt. The overall application of the electroenzymatic led to a greater degradation rate than the use of electrolysis alone. Also the by-products formed were found to consist primarily of an aromatic amine, sulfanilic acid, and unknown compounds.

  3. ZnO nanowire lasers.

    PubMed

    Vanmaekelbergh, Daniël; van Vugt, Lambert K

    2011-07-01

    The pathway towards the realization of optical solid-state lasers was gradual and slow. After Einstein's paper on absorption and stimulated emission of light in 1917 it took until 1960 for the first solid state laser device to see the light. Not much later, the first semiconductor laser was demonstrated and lasing in the near UV spectral range from ZnO was reported as early as 1966. The research on the optical properties of ZnO showed a remarkable revival since 1995 with the demonstration of room temperature lasing, which was further enhanced by the first report of lasing by a single nanowire in 2001. Since then, the research focussed increasingly on one-dimensional nanowires of ZnO. We start this review with a brief description of the opto-electronic properties of ZnO that are related to the wurtzite crystal structure. How these properties are modified by the nanowire geometry is discussed in the subsequent sections, in which we present the confined photon and/or polariton modes and how these can be investigated experimentally. Next, we review experimental studies of laser emission from single ZnO nanowires under different experimental conditions. We emphasize the special features resulting from the sub-wavelength dimensions by presenting our results on single ZnO nanowires lying on a substrate. At present, the mechanism of lasing in ZnO (nanowires) is the subject of a strong debate that is considered at the end of this review.

  4. Ellipsometry characterization of polycrystalline ZnO layers with the modeling of carrier concentration gradient: Effects of grain boundary, humidity, and surface texture

    SciTech Connect

    Sago, Keisuke; Fujiwara, Hiroyuki; Kuramochi, Hideto; Iigusa, Hitoshi; Utsumi, Kentaro

    2014-04-07

    Spectroscopic ellipsometry (SE) has been applied to study the effects of grain boundary, humidity, and surface texture on the carrier transport properties of Al-doped ZnO layers fabricated by dc and rf magnetron sputtering. In the SE analysis, the variation in the free carrier absorption toward the growth direction, induced by the ZnO grain growth on foreign substrates, has been modeled explicitly by adopting a multilayer model in which the optical carrier concentration (N{sub opt}) varies continuously with a constant optical mobility (μ{sub opt}). The effect of the grain boundary has been studied by comparing μ{sub opt} with Hall mobility (μ{sub Hall}). The change in μ{sub Hall}/μ{sub opt} indicates a sharp structural transition of the ZnO polycrystalline layer at a thickness of d ∼ 500 nm, which correlates very well with the structure confirmed by transmission electron microscopy. In particular, below the transition thickness, the formation of the high density grain boundary leads to the reduction in the μ{sub Hall}/μ{sub opt} ratio as well as N{sub opt}. As a result, we find that the thickness dependence of the carrier transport properties is almost completely governed by the grain boundary formation. On the other hand, when the ZnO layer is exposed to wet air at 85 °C, μ{sub Hall} reduces drastically with a minor variation of μ{sub opt} due to the enhanced grain boundary scattering. We have also characterized textured ZnO:Al layers prepared by HCl wet etching by SE. The analysis revealed that the near-surface carrier concentration increases slightly after the etching. We demonstrate that the SE technique can be applied to distinguish various rough textured structures (size ∼ 1 μm) of the ZnO layers prepared by the HCl etching.

  5. Induced conductivity in sol-gel ZnO films by passivation or elimination of Zn vacancies

    NASA Astrophysics Data System (ADS)

    Winarski, D. J.; Anwand, W.; Wagner, A.; Saadatkia, P.; Selim, F. A.; Allen, M.; Wenner, B.; Leedy, K.; Allen, J.; Tetlak, S.; Look, D. C.

    2016-09-01

    Undoped and Ga- and Al- doped ZnO films were synthesized using sol-gel and spin coating methods and characterized by X-ray diffraction, high-resolution scanning electron microscopy (SEM), optical spectroscopy and Hall-effect measurements. SEM measurements reveal an average grain size of 20 nm and distinct individual layer structure. Measurable conductivity was not detected in the unprocessed films; however, annealing in hydrogen or zinc environment induced significant conductivity (˜10-2 Ω .cm) in most films. Positron annihilation spectroscopy measurements provided strong evidence that the significant enhancement in conductivity was due to hydrogen passivation of Zn vacancy related defects or elimination of Zn vacancies by Zn interstitials which suppress their role as deep acceptors. Hydrogen passivation of cation vacancies is shown to play an important role in tuning the electrical conductivity of ZnO, similar to its role in passivation of defects at the Si/SiO2 interface that has been essential for the successful development of complementary metal-oxide-semiconductor (CMOS) devices. By comparison with hydrogen effect on other oxides, we suggest that hydrogen may play a universal role in oxides passivating cation vacancies and modifying their electronic properties.

  6. Effect of Al and Fe doping in ZnO on magnetic and magneto-transport properties

    NASA Astrophysics Data System (ADS)

    Kumar, Santosh; Deepika; Tripathi, Malvika; Vaibhav, Pratyush; Kumar, Aman; Kumar, Ritesh; Choudhary, R. J.; Phase, D. M.

    2016-12-01

    The structural, magnetic and magneto-transport of undoped ZnO, Zn0.97Al0.03O, Zn0.95Fe0.05O and Zn0.92Al0.03Fe0.05O thin films grown on Si(100) substrate using pulsed laser deposition were investigated. The single phase nature of the films is confirmed by X-ray diffraction and Raman spectroscopy measurements. The possibility of Fe metal cluster in Fe doped/co-doped films is ruled out by Fe 2p core level photoelectron spectra. From O 1s core level spectra it is observed that oxygen vacancy is present in all the films. The undoped ZnO film shows magnetic ordering below ∼175 K, whereas Fe doped/codoped samples show magnetic ordering even at 300 K. The Al doped sample reveals paramagnetic behavior. The magneto-transport measurements suggest that the mobile carriers undergo exchange interaction with local magnetic moments.

  7. Highly transparent and conductive ZnO:Al thin films prepared by vacuum arc plasma evaporation

    NASA Astrophysics Data System (ADS)

    Miyata, Toshihiro; Minamino, Youhei; Ida, Satoshi; Minami, Tadatsugu

    2004-07-01

    A vacuum arc plasma evaporation (VAPE) method using both oxide fragments and gas sources as the source materials is demonstrated to be very effective for the preparation of multicomponent oxide thin films. Highly transparent and conductive Al-doped ZnO (AZO) thin films were prepared by the VAPE method using a ZnO fragment target and a gas source Al dopant, aluminum acethylacetonate (Al(C5H7O2)3) contained in a stainless steel vessel. The Al content in the AZO films was altered by controlling the partial pressure (or flow rate) of the Al dopant gas. High deposition rates as well as uniform distributions of resistivity and thickness on the substrate surface were obtained on large area glass substrates. A low resistivity on the order of 10-4 Ω cm and an average transmittance above 80% in the visible range were obtained in AZO thin films deposited on glass substrates. .

  8. Differences between nanoscale structural and electrical properties of AZO:N and AZO used in polymer light-emitting diodes.

    PubMed

    Chen, Sy-Hann; Yu, Chang-Feng

    2010-03-01

    Conducting atomic force microscopy and scanning surface potential microscopy were adopted to investigate the nanoscale surface electrical properties of N-doped aluminum zinc oxide (AZO:N) films that were prepared by pulsed laser deposition (PLD) at various substrate temperatures. Experimental results demonstrated that when the substrate temperature is 150 degrees C and the N(2)O background pressure is 150 mTorr, the N-dopant concentration on the surface is optimal. In addition, the root-mean-square roughness value of the film surface, the low contact current (<400 nA) conducting region as a percentage of the total area, and the mean work function value are 1.43 nm, 96.9%, and 4.88 eV, respectively, all of which are better than those of the optimal AZO film made by PLD. This result indicates that N-doped AZO films are better for use as window materials in polymer light-emitting diodes.

  9. 40 CFR 721.984 - Amino-hydroxy sulfonaphthylazo-disubstituted phenyl azo benzene carboxylate salt (generic).

    Code of Federal Regulations, 2013 CFR

    2013-07-01

    ...-disubstituted phenyl azo benzene carboxylate salt (generic). 721.984 Section 721.984 Protection of Environment...-disubstituted phenyl azo benzene carboxylate salt (generic). (a) Chemical substance and significant new uses...-disubstituted phenyl azo benzene carboxylate salt (PMN P-00-0351) is subject to reporting under this section...

  10. 40 CFR 721.984 - Amino-hydroxy sulfonaphthylazo-disubstituted phenyl azo benzene carboxylate salt (generic).

    Code of Federal Regulations, 2011 CFR

    2011-07-01

    ...-disubstituted phenyl azo benzene carboxylate salt (generic). 721.984 Section 721.984 Protection of Environment...-disubstituted phenyl azo benzene carboxylate salt (generic). (a) Chemical substance and significant new uses...-disubstituted phenyl azo benzene carboxylate salt (PMN P-00-0351) is subject to reporting under this section...

  11. 40 CFR 721.984 - Amino-hydroxy sulfonaphthylazo-disubstituted phenyl azo benzene carboxylate salt (generic).

    Code of Federal Regulations, 2010 CFR

    2010-07-01

    ...-disubstituted phenyl azo benzene carboxylate salt (generic). 721.984 Section 721.984 Protection of Environment...-disubstituted phenyl azo benzene carboxylate salt (generic). (a) Chemical substance and significant new uses...-disubstituted phenyl azo benzene carboxylate salt (PMN P-00-0351) is subject to reporting under this section...

  12. 40 CFR 721.984 - Amino-hydroxy sulfonaphthylazo-disubstituted phenyl azo benzene carboxylate salt (generic).

    Code of Federal Regulations, 2012 CFR

    2012-07-01

    ...-disubstituted phenyl azo benzene carboxylate salt (generic). 721.984 Section 721.984 Protection of Environment...-disubstituted phenyl azo benzene carboxylate salt (generic). (a) Chemical substance and significant new uses...-disubstituted phenyl azo benzene carboxylate salt (PMN P-00-0351) is subject to reporting under this section...

  13. 40 CFR 721.984 - Amino-hydroxy sulfonaphthylazo-disubstituted phenyl azo benzene carboxylate salt (generic).

    Code of Federal Regulations, 2014 CFR

    2014-07-01

    ...-disubstituted phenyl azo benzene carboxylate salt (generic). 721.984 Section 721.984 Protection of Environment...-disubstituted phenyl azo benzene carboxylate salt (generic). (a) Chemical substance and significant new uses...-disubstituted phenyl azo benzene carboxylate salt (PMN P-00-0351) is subject to reporting under this section...

  14. Insights into stability, electronic properties, defect properties and Li ions migration of Na, Mg and Al-doped LiVPO4F for cathode materials of lithium ion batteries: A first-principles investigation

    NASA Astrophysics Data System (ADS)

    Lv, Xiaojun; Xu, Zhenming; Li, Jie; Chen, Jiangan; Liu, Qingsheng

    2016-07-01

    The effects of Na, Mg and Al doping on the structure, electronic property, defect property and Li ions migration of LiVPO4F were investigated by the first-principles method. Calculations show that the processes of forming Li0.875Na0.125VPO4F, α- and β-LiMg0.375V0.75PO4F, α- and β-LiAl0.125V0.875PO4F are all feasible. Na, Mg and Al doping significantly improve the electrical conductivity of LiVPO4F and simultaneously maintain their structural stability attributing to the reduction of band gaps through variations of V-3d spin up orbitals. Li vacancy defects of LiVPO4F are not ignorable, and vacancy defects with a lower activation energy for Li atom are far more likely to occur than Frenkel defects for Li and vacancy defects for other atoms. For pristine LiVPO4F, path D along [0.012 0 . 17 ̅ 0.572] direction is found to have the lowest activation energy of 0.418 eV, suggesting that anisotropic nature of Li ion conduction and LiVPO4F is a one-dimensional (1D)-ion conductor. The corresponding diffusion coefficient was estimated to be 2.82×10-9 cm2/s, which is in good agreement with those experimental values.

  15. 40 CFR 721.1555 - Substituted phenyl azo substituted benzenediazonium salt.

    Code of Federal Regulations, 2010 CFR

    2010-07-01

    ... benzenediazonium salt. 721.1555 Section 721.1555 Protection of Environment ENVIRONMENTAL PROTECTION AGENCY... Specific Chemical Substances § 721.1555 Substituted phenyl azo substituted benzenediazonium salt. (a... generically as a substituted phenyl azo substituted benzenediazonium salt (PMN P-92-652) is subject...

  16. 40 CFR 721.9545 - Substituted phenyl azo substituted sulfocarbopolycle, sodium salt.

    Code of Federal Regulations, 2010 CFR

    2010-07-01

    ... sulfocarbopolycle, sodium salt. 721.9545 Section 721.9545 Protection of Environment ENVIRONMENTAL PROTECTION AGENCY... Specific Chemical Substances § 721.9545 Substituted phenyl azo substituted sulfocarbopolycle, sodium salt... identified generically as a substituted phenyl azo substituted sulfocarbopolycle, sodium salt (PMN...

  17. 40 CFR 721.1555 - Substituted phenyl azo substituted benzenediazonium salt.

    Code of Federal Regulations, 2011 CFR

    2011-07-01

    ... benzenediazonium salt. 721.1555 Section 721.1555 Protection of Environment ENVIRONMENTAL PROTECTION AGENCY... Specific Chemical Substances § 721.1555 Substituted phenyl azo substituted benzenediazonium salt. (a... generically as a substituted phenyl azo substituted benzenediazonium salt (PMN P-92-652) is subject...

  18. 40 CFR 721.9545 - Substituted phenyl azo substituted sulfocarbopolycle, sodium salt.

    Code of Federal Regulations, 2011 CFR

    2011-07-01

    ... sulfocarbopolycle, sodium salt. 721.9545 Section 721.9545 Protection of Environment ENVIRONMENTAL PROTECTION AGENCY... Specific Chemical Substances § 721.9545 Substituted phenyl azo substituted sulfocarbopolycle, sodium salt... identified generically as a substituted phenyl azo substituted sulfocarbopolycle, sodium salt (PMN...

  19. FATE OF WATER SOLUBLE AZO DYES IN THE ACTIVATED SLUDGE PROCESS

    EPA Science Inventory

    The objective of this study was to determine the partitioning of water soluble azo dyes in the activated sludge process (ASP). Azo dyes are of concern because some of the dyes, dye precursors , and/or their degradation products such as aromatic amines (which are also dye precurso...

  20. Mapping hydrogen sulfide in rats with a novel azo-based fluorescent probe.

    PubMed

    Li, Xin; Cheng, Juan; Gong, Yanling; Yang, Bo; Hu, Yongzhou

    2015-03-15

    We report herein a reaction-based fluorescent switch-on sulfide sensor, azo3, for the quantification of endogenous sulfides in rat tissues. The sensor was exploited based on the novel azo-sulfide chemistry and designed by locking the rhodol fluorophore into its nonfluorescent form with an azo group. However, the azo group would undergo a specific and biocompatible reaction with sulfides, triggering significant fluorescence increasements which were linear to the concentrations of sulfides. Azo3 distinguished by its high sensitivity (148-fold fluorescent switch-on response), good selectivity (22-fold more selective towards sulfides than other bio-thiol species) and low detection limit (500nM). Moreover, the azo3-based assay for biological sulfides displayed the unique advantage of being insusceptible to ultraviolet (UV) irradiation. Azo3 has been successfully applied to the quantification of endogenous sulfides in rat plasma and tissues including heart, brain, liver, spleen, lung and kidney. In addition to providing azo3 as a valuable tool to analyze sulfides in biological samples, we also discussed the influences of the electron effect on the sensitivity of the probes, which would shed some light on the design of future reaction-based probes.

  1. REDUCTION OF AZO DYES WITH ZERO-VALENT IRON. (R827117)

    EPA Science Inventory

    The reduction of azo dyes by zero-valent iron metal (Fe0) at pH 7.0 in 10 mM HEPES buffer was studied in aqueous, anaerobic batch systems. Orange II was reduced by cleavage of the azo linkage, as evidenced by the production of sulfanilic acid (a substituted ani...

  2. 40 CFR 721.9597 - Salt of a substituted sulfonated aryl azo compound (generic).

    Code of Federal Regulations, 2010 CFR

    2010-07-01

    ... 40 Protection of Environment 30 2010-07-01 2010-07-01 false Salt of a substituted sulfonated aryl... New Uses for Specific Chemical Substances § 721.9597 Salt of a substituted sulfonated aryl azo... substance identified generically as salt of a substituted sulfonated aryl azo compound (PMN P-00-0094)...

  3. 40 CFR 721.9597 - Salt of a substituted sulfonated aryl azo compound (generic).

    Code of Federal Regulations, 2011 CFR

    2011-07-01

    ... 40 Protection of Environment 31 2011-07-01 2011-07-01 false Salt of a substituted sulfonated aryl... New Uses for Specific Chemical Substances § 721.9597 Salt of a substituted sulfonated aryl azo... substance identified generically as salt of a substituted sulfonated aryl azo compound (PMN P-00-0094)...

  4. THE MUTAGENICITY OF METALLIZED AND UNMETALLIZED AZO AND FORMAZAN DYES IN THE SALMONELLA MUTAGENICITY ASSAY

    EPA Science Inventory

    The mutagenicity of metallized and unmetallized azo and formazan dyes in the Salmonella mutagenicity
    Laura. C. Edwards', Harold S. Freeman'*, and Larry D. Claxton2

    Abstract
    In previous papers, the synthesis and chemical properties of iron complexed azo and formazan d...

  5. 40 CFR 721.1555 - Substituted phenyl azo substituted benzenediazonium salt.

    Code of Federal Regulations, 2014 CFR

    2014-07-01

    ... benzenediazonium salt. 721.1555 Section 721.1555 Protection of Environment ENVIRONMENTAL PROTECTION AGENCY... Specific Chemical Substances § 721.1555 Substituted phenyl azo substituted benzenediazonium salt. (a... generically as a substituted phenyl azo substituted benzenediazonium salt (PMN P-92-652) is subject...

  6. 40 CFR 721.9545 - Substituted phenyl azo substituted sulfocarbopolycle, sodium salt.

    Code of Federal Regulations, 2013 CFR

    2013-07-01

    ... sulfocarbopolycle, sodium salt. 721.9545 Section 721.9545 Protection of Environment ENVIRONMENTAL PROTECTION AGENCY... Specific Chemical Substances § 721.9545 Substituted phenyl azo substituted sulfocarbopolycle, sodium salt... identified generically as a substituted phenyl azo substituted sulfocarbopolycle, sodium salt (PMN...

  7. 40 CFR 721.1555 - Substituted phenyl azo substituted benzenediazonium salt.

    Code of Federal Regulations, 2012 CFR

    2012-07-01

    ... benzenediazonium salt. 721.1555 Section 721.1555 Protection of Environment ENVIRONMENTAL PROTECTION AGENCY... Specific Chemical Substances § 721.1555 Substituted phenyl azo substituted benzenediazonium salt. (a... generically as a substituted phenyl azo substituted benzenediazonium salt (PMN P-92-652) is subject...

  8. 40 CFR 721.1555 - Substituted phenyl azo substituted benzenediazonium salt.

    Code of Federal Regulations, 2013 CFR

    2013-07-01

    ... benzenediazonium salt. 721.1555 Section 721.1555 Protection of Environment ENVIRONMENTAL PROTECTION AGENCY... Specific Chemical Substances § 721.1555 Substituted phenyl azo substituted benzenediazonium salt. (a... generically as a substituted phenyl azo substituted benzenediazonium salt (PMN P-92-652) is subject...

  9. 40 CFR 721.9545 - Substituted phenyl azo substituted sulfocarbopolycle, sodium salt.

    Code of Federal Regulations, 2012 CFR

    2012-07-01

    ... sulfocarbopolycle, sodium salt. 721.9545 Section 721.9545 Protection of Environment ENVIRONMENTAL PROTECTION AGENCY... Specific Chemical Substances § 721.9545 Substituted phenyl azo substituted sulfocarbopolycle, sodium salt... identified generically as a substituted phenyl azo substituted sulfocarbopolycle, sodium salt (PMN...

  10. 40 CFR 721.9545 - Substituted phenyl azo substituted sulfocarbopolycle, sodium salt.

    Code of Federal Regulations, 2014 CFR

    2014-07-01

    ... sulfocarbopolycle, sodium salt. 721.9545 Section 721.9545 Protection of Environment ENVIRONMENTAL PROTECTION AGENCY... Specific Chemical Substances § 721.9545 Substituted phenyl azo substituted sulfocarbopolycle, sodium salt... identified generically as a substituted phenyl azo substituted sulfocarbopolycle, sodium salt (PMN...

  11. 40 CFR 721.9597 - Salt of a substituted sulfonated aryl azo compound (generic).

    Code of Federal Regulations, 2014 CFR

    2014-07-01

    ... azo compound (generic). 721.9597 Section 721.9597 Protection of Environment ENVIRONMENTAL PROTECTION... compound (generic). (a) Chemical substance and significant new uses subject to reporting. (1) The chemical substance identified generically as salt of a substituted sulfonated aryl azo compound (PMN P-00-0094)...

  12. 40 CFR 721.9597 - Salt of a substituted sulfonated aryl azo compound (generic).

    Code of Federal Regulations, 2012 CFR

    2012-07-01

    ... azo compound (generic). 721.9597 Section 721.9597 Protection of Environment ENVIRONMENTAL PROTECTION... compound (generic). (a) Chemical substance and significant new uses subject to reporting. (1) The chemical substance identified generically as salt of a substituted sulfonated aryl azo compound (PMN P-00-0094)...

  13. 40 CFR 721.9597 - Salt of a substituted sulfonated aryl azo compound (generic).

    Code of Federal Regulations, 2013 CFR

    2013-07-01

    ... azo compound (generic). 721.9597 Section 721.9597 Protection of Environment ENVIRONMENTAL PROTECTION... compound (generic). (a) Chemical substance and significant new uses subject to reporting. (1) The chemical substance identified generically as salt of a substituted sulfonated aryl azo compound (PMN P-00-0094)...

  14. Structural investigation of aluminium doped ZnO nanoparticles by solid-state NMR spectroscopy.

    PubMed

    Avadhut, Yamini S; Weber, Johannes; Hammarberg, Elin; Feldmann, Claus; Schmedt auf der Günne, Jörn

    2012-09-07

    The electrical conductivity of aluminium doped zinc oxide (AZO, ZnO:Al) materials depends on doping induced defects and grain structure. This study aims at relating macroscopic electrical conductivity of AZO nanoparticles with their atomic structure, which is non-trivial because the derived materials are heavily disordered and heterogeneous in nature. For this purpose we synthesized AZO nanoparticles with different doping levels and narrow size distribution by a microwave assisted polyol method followed by drying and a reductive treatment with forming gas. From these particles electrically conductive, optically transparent films were obtained by spin-coating. Characterization involved energy-dispersive X-ray analysis, wet chemical analysis, X-ray diffraction, electron microscopy and dynamic light scattering, which provided a basis for a detailed structural solid-state NMR study. A multinuclear ((27)Al, (13)C, (1)H) spectroscopic investigation required a number of 1D MAS NMR and 2D MAS NMR techniques (T(1)-measurements, (27)Al-MQMAS, (27)Al-(1)H 2D-PRESTO-III heteronuclear correlation spectroscopy), which were corroborated by quantum chemical calculations with an embedded cluster method (EEIM) at the DFT level. From the combined data we conclude that only a small part of the provided Al is incorporated into the ZnO structure by substitution of Zn. The related (27)Al NMR signal undergoes a Knight shift when the material is subjected to a reductive treatment with forming gas. At higher (formal) doping levels Al forms insulating (Al, H and C containing) side-phases, which cover the surface of the ZnO:Al particles and increase the sheet resistivity of spin-coated material. Moreover, calculated (27)Al quadrupole coupling constants serve as a spectroscopic fingerprint by which previously suggested point-defects can be identified and in their great majority be ruled out.

  15. Comprehensive review and compilation of treatment for azo dyes using microbial fuel cells.

    PubMed

    Murali, V; Ong, Soon-An; Ho, Li-Ngee; Wong, Yee-Shian; Hamidin, Nasrul

    2013-03-01

    Microbial fuel cells (MFCs) represent an emerging technology that focuses on power generation and effluent treatment. This review compiles articles related to MFCs using azo dye as the substrate. The significance of the general components in MFCs and systems of MFCs treating azo dye is depicted in this review. In addition, degradation of azo dyes such as Congo red, methyl orange, active brilliant red X-3B, amaranth, reactive blue 221, and acid orange 7 in MFCs are summarized. Further exploration and operational modification are suggested to address the challenges of complete removal of azo dye with maximum power generation in an MFC. In addition, a sequential treatment system with MFCs is suggested for complete mineralization of azo dye.

  16. Sol-gel derived Al and Ga co-doped ZnO thin films: An optoelectronic study

    NASA Astrophysics Data System (ADS)

    Ebrahimifard, Reza; Golobostanfard, Mohammad Reza; Abdizadeh, Hossein

    2014-01-01

    Al and Ga co-doped ZnO (AGZO) thin films with different doping contents of 0.5-4 at.% were synthesized via sol-gel route using dip coating method and the results were compared to the single doped specimens Al:ZnO (AZO) and Ga:ZnO (GZO). All samples were highly transparent in visible region (T > 85%) with band gap values around 3.3 eV. Introduction of Al and Ga to the ZnO crystal structure decreased the crystallinity and reduced the particle size of the films. Electrical resistivity was investigated and engineered in this study as the main parameter. Single doped samples showed reduction of resistivity compared to the un-doped ZnO. In this regard, Ga was more efficient than Al in decreasing the electrical resistivity. Furthermore, samples with 1 at.% Al and 1 at.% Ga showed the minimum amount of electrical resistivity. Co-doping was performed with two different approaches including variable doping content (Al + Ga ≠ cte) and constant doping content (Al + Ga = 0.5, 1, and 2 at.%) for the sake of the comparison with single doped samples. Samples with Al = 1 at.% and Ga = 1 at.% showed the lowest electrical resistivity in AGZO samples of former approach. However, in latter approach the lowest resistivity was obtained in Al + Ga = 2 at.% sample. The results proved the capability of co-doped samples in optoelectronic industry regarding partially substitution of expensive Ga with Al and obtaining co-doped AGZO transparent conductive thin films with lower resistivity compared to conventional AZO thin films and also achieving commercial advantages compared to costly GZO thin films.

  17. Anaerobic/aerobic treatment of selected azo dyes in wastewater

    SciTech Connect

    Seshadri, S.; Bishop, P.L. . Dept. of Civil and Environmental Engineering); Agha, A.M. . Faculty of Civil Engineering)

    1994-01-01

    Azo dyes represent the largest class of dyes in use today. Current environmental concern with these dyes revolves around the potential carcinogenic health risk presented by these dyes or their intermediate biodegradation products when exposed to microflora in the human digestive tract. These dyes may build up in the environment, since many wastewater treatment plants allow these dyes to pass through the system virtually untreated. The initial step in the degradation of these dyes is the cleavage of the Azo bond. This cleavage is often impossible under aerobic conditions, but has been readily demonstrated under anaerobic conditions. The focus of the study was to determine the feasibility of using an anaerobic fluidized-bed reactor to accomplish this cleavage. The effects of typical process variables such as hydraulic retention time (HRT), influent dye concentration levels, and degree of bed fluidization on removal efficiencies were also studied. The four dyes selected for this study were Acid-Orange 7, Acid-Orange 8, Acid-Orange 10, and Acid-Red 14. The effectiveness of using a bench-scale-activated sludge reactor as a sequenced second stage was also examined. Results indicate that nearly complete cleavage of the Azo bond is easily accomplished for each of the four dyes under hydraulic retention times of either 12 or 24 h. Initial results indicate, though, that aromatic amine by-products remain. The sequenced second stage was able to remove the remaining Chemical Oxygen Demand (COD) load to acceptable levels. Work is presently underway to determine the face of the anaerobic by-products in the aerobic second stage.

  18. Photodegradation of an azo dye of the textile industry.

    PubMed

    Cisneros, Rosario López; Espinoza, Abel Gutarra; Litter, Marta I

    2002-07-01

    An advanced oxidation treatment, UV/H2O2, was applied to an azo dye, Hispamin Black CA, widely used in the Peruvian textile industry. Rates of color removal and degradation of the dye have been evaluated. A strongly absorbing solution was completely decolorized after 35 min of treatment, and after 60 min an 82% reduction of the total organic carbon (TOC) was obtained. It has been found that the degradation rate increased until an optimum value, beyond which the reagent exerted an inhibitory effect. The degradation rate was also function of pH.

  19. Inverted organic light-emitting diodes using different transparent conductive oxide films as a cathode

    NASA Astrophysics Data System (ADS)

    Takada, Makoto; Kobayashi, Takashi; Nagase, Takashi; Naito, Hiroyoshi

    2016-03-01

    We report on poly(dioctylfluorene-alt-benzothiadiazole) (F8BT) based inverted organic light-emitting diodes (iOLEDs) using commercially available transparent conductive oxide (TCO) films as a cathode, indium tin oxide (ITO), Ga doped ZnO (GZO), and Al doped ZnO (AZO). The ITO, GZO, and AZO glasses work as an electron-injecting layer (EIL) and cathode. The device configuration that we prepared is ITO, GZO, or AZO/F8BT/MoO3/Au. The device characteristics of these iOLEDs are almost comparable to those of conventional iOLEDs with ZnO films prepared by spray pyrolysis as an EIL, indicating that the electron injection properties of ITO, GZO, or AZO as a cathode are similar to those of ZnO layer in conventional iOLEDs. These results demonstrate the low-cost fabrication of iOLEDs utilizing commercially available TCO glasses as a cathode without deposition of ZnO layers on ITO glass.

  20. Differential catalytic action of Brevibacillus laterosporus on two dissimilar azo dyes Remazol red and Rubine GFL.

    PubMed

    Kurade, Mayur B; Waghmode, Tatoba R; Tamboli, Dhawal P; Govindwar, Sanjay P

    2013-02-01

    This comparative study disclosed the diverse catalytic activities of Brevibacillus laterosporus on two different azo dyes. It decolorized 100% of Remazol red and 95% of Rubine GFL within 30 and 48 h respectively, under static condition at 50 mg l⁻¹ dye concentration. Significant increase was observed in azo reductase, NADH-DCIP reductase, veratryl alcohol oxidase and tyrosinase in cells obtained after decolorization of Remazol red; whereas these values were much different with complete inhibition of azo reductase during decolorization of Rubine GFL. The plausible pathway of dye degradation obtained from Gas chromatography-Mass spectroscopy (GC-MS) data confirmed the different metabolic fate of these structurally unidentical dyes. FTIR and HPTLC analysis of extracted metabolites confirmed the biodegradation, while phytotoxicity study assured the detoxification of both the dyes studied. The results obtained in this study suggests, i) sulpho and hydroxyl group present at ortho position to azo group stimulated reduction of azo bond by azo reductase in Remazol red, ii) the same reduction was totally hampered due to presence of ethyl-amino propanenitrile group at para position to azo group in Rubine GFL.

  1. Crystal structure of an aerobic FMN-dependent azoreductase (AzoA) from Enterococcus faecalis.

    PubMed

    Liu, Zhi-Jie; Chen, Huizhong; Shaw, Neil; Hopper, Sherryll L; Chen, Lirong; Chen, Siwei; Cerniglia, Carl E; Wang, Bi-Cheng

    2007-07-01

    The initial critical step of reduction of the azo bond during the metabolism of azo dyes is catalyzed by a group of NAD(P)H dependant enzymes called azoreductases. Although several azoreductases have been identified from microorganisms and partially characterized, very little is known about the structural basis for substrate specificity and the nature of catalysis. Enterococcus faecalis azoreductase A (AzoA) is a highly active azoreductase with a broad spectrum of substrate specificity and is capable of degrading a wide variety of azo dyes. Here, we report the crystal structure of the AzoA from E. faecalis determined at 2.07 A resolution with bound FMN ligand. Phases were obtained by single wavelength anomalous scattering of selenomethionine labeled protein crystals. The asymmetric unit consisted of two dimers with one FMN molecule bound to each monomer. The AzoA monomer takes a typical NAD(P)-binding Rossmann fold with a highly conserved FMN binding pocket. A salt bridge between Arg18 and Asp184 restricts the size of the flavin binding pocket such that only FMN can bind. A putative NADH binding site could be identified and a plausible mechanism for substrate reduction is proposed. Expression studies revealed azoA gene to be expressed constitutively in E. faecalis.

  2. Abatement of Azo Dye from Wastewater Using Bimetal-Chitosan

    PubMed Central

    Asgari, Ghorban; Farjadfard, Sima

    2013-01-01

    We introduce a new adsorbent, bimetallic chitosan particle (BCP) that is successfully synthesized and applied to remove the orange II dye from wastewater. The effects of pH, BCP quantity, and contact time are initially verified on the basis of the percentage of orange II removed from the wastewater. Experimental data reveal that the Cu/Mg bimetal and chitosan have a synergistic effect on the adsorption process of the adsorbate, where the dye adsorption by Cu/Mg bimetal, chitosan alone, and bimetal-chitosan is 10, 49, and 99.5%, respectively. The time required for the complete decolorization of orange II by 1 mg/L of BCP is 10 min. The Langmuir model is the best fit for the experimental data, which attains a maximum adsorption capacity of 384.6 mg/g. The consideration of the kinetic behavior indicates that the adsorption of orange II onto the BCP fits best with the pseudo-second-order and Elovich models. Further, the simulated azo dye wastewater can be effectively treated using a relatively low quantity of the adsorbent, 1 mg/L, within a short reaction time of 20 min. Overall, the use of BCP can be considered a promising method for eliminating the azo dye from wastewater effectively. PMID:24348163

  3. Azo Dye Biodecolorization Enhanced by Echinodontium taxodii Cultured with Lignin

    PubMed Central

    Meng, Jing; Yu, Hongbo; Zhang, Xiaoyu

    2014-01-01

    Lignocellulose facilitates the fungal oxidization of recalcitrant organic pollutants through the extracellular ligninolytic enzymes induced by lignin in wood or other plant tissues. However, available information on this phenomenon is insufficient. Free radical chain reactions during lignin metabolism are important in xenobiotic removal. Thus, the effect of lignin on azo dye decolorization in vivo by Echinodontium taxodii was evaluated. In the presence of lignin, optimum decolorization percentages for Remazol Brilliant Violet 5R, Direct Red 5B, Direct Black 38, and Direct Black 22 were 91.75% (control, 65.96%), 76.89% (control, 43.78%), 43.44% (control, 17.02%), and 44.75% (control, 12.16%), respectively, in the submerged cultures. Laccase was the most important enzyme during biodecolorization. Aside from the stimulating of laccase activity, lignin might be degraded by E. taxodii, and then these degraded low-molecular-weight metabolites could act as redox mediators promoting decolorization of azo dyes. The relationship between laccase and lignin degradation was investigated through decolorization tests in vitro with purified enzyme and dozens of aromatics, which can be derivatives of lignin and can function as laccase mediators or inducers. Dyes were decolorized at triple or even higher rates in certain laccase–aromatic systems at chemical concentrations as low as 10 µM. PMID:25285777

  4. Effect of nitrate on anaerobic azo dye reduction.

    PubMed

    Cirik, Kevser; Kitiş, Mehmet; Çinar, Özer

    2013-01-01

    The aim of the study was to investigate the effect of nitrate on anaerobic color removal efficiencies. For this aim, anaerobic-aerobic sequencing batch reactor (SBR) fed with a simulated textile effluent including Remazol Brilliant Violet 5R azo dye was operated with a total cycle time of 12 h, including anaerobic (6 h) and aerobic cycles (6 h). Microorganism grown under anaerobic phase of the reactor was exposed to different amounts of competitive electron acceptor (nitrate) and performance of the system was determined by monitoring color removal efficiency, nitrate removal, nitrite formation and removal, oxidation reduction potential, color removal rate, chemical oxygen demand (COD), specific anaerobic enzyme (azo reductase) and aerobic enzyme (catechol 1,2 dioxygenase), and formation and removal of aromatic amines. Variations of population dynamics of microorganisms exposed to various amount of nitrate were identified by denaturing gradient gel electrophoresis (DGGE). It was found that nitrate has adverse effect on anaerobic color removal efficiency and color removal was achieved after denitrification process was completed. It was found that nitrate stimulates the COD removal efficiency and accelerates the COD removal in the first hour of anaerobic phase. About 90 % total COD removal efficiencies were achieved in which microorganism exposed to increasing amount of nitrate. Population dynamics of microorganisms exposed to various amount of nitrate were changed and diversity was increased.

  5. Mechanism and Model of Laser-Driven Mass Transport in Thin Films of Azo Polymers

    DTIC Science & Technology

    2007-11-02

    and Model of Laser-Driven Mass Transport in Thin Films of Azo Polymers by C. J. Barrett, A. Natansohn, and P. Rochon Submitted for publication in...DATE June 23, 1998 Tprhnjr.fil P^nnr I’: 4. TITLE AHO SU3TITLE Mechanism and Model of Laser-Driven Mass Transport in Thin Films of Azo Polymers...TRANSPORT IN THIN FILMS OF AZO POLYMERS Christopher J. Barrett’, Almeria L. Natansohn1, and Paul L. Rochon2. ’Dept. of Chemistry. Queen’s

  6. Quinone-mediated decolorization of sulfonated azo dyes by cells and cell extracts from Sphingomonas xenophaga.

    PubMed

    Jiao, Ling; Lu, Hong; Zhou, Jiti; Wang, Jing

    2009-01-01

    The effects of various quinone compounds on the decolorization rates of sulfonated azo dyes by Sphingomonas xenophaga QYY were investigated. The results showed that anthraquinone-2-sulfonate (AQS) was the most effective redox mediator and AQS reduction was the rate-limited step of AQS-mediated decolorization of sulfonated azo dyes. Based on AQS biological toxicity tests, it was assumed that AQS might enter the cells and kill them. In the cytoplasmic extracts from strain QYY, AQS more effectively increased decolorization rates of sulfonated azo dyes than other quinone compounds. In addition, we found a NADH/FMN-dependent AQS reductase using nondenaturing polyacrylamide gel electrophoresis (Native-PAGE).

  7. Structural and optical investigations on seed layer assisted hydrothermally grown ZnO nanorods on flat and textured substrates

    NASA Astrophysics Data System (ADS)

    Rayerfrancis, Arokiyadoss; Balaji Bhargav, P.; Ahmed, Nafis; Balaji, C.; Dhara, Sandip

    2016-12-01

    In this article we report the synthesis of vertically aligned ZnO nanorods on plain as well as textured fluorine doped tin oxide (FTO) coated glass substrate using hydrothermal method. Prior to hydrothermal method, AZO seed layer of thickness 5, 10 and 15 nm were deposited on the chosen substrates by DC magnetron sputtering. The as-grown nanorods were annealed at 450 °C for 3 h to improve the crystallinity. Morphology and structure of the nanorods was observed by field emission scanning electron microscopy. The formation of wurtzite structure was confirmed through x-ray diffraction studies. The optical mode of ZnO, E2 (high) at 434 cm-1 present in the samples was confirmed by Raman spectroscopy. The seed layer assisted growth of ZnO nanorods were defect free, which is confirmed from the photoluminescence spectra, and the intensity of band to band emission is much greater than the emission from the defects at the deep level.

  8. Conductivity and touch-sensor application for atomic layer deposition ZnO and Al:ZnO on nylon nonwoven fiber mats

    SciTech Connect

    Sweet, William J.; Oldham, Christopher J.; Parsons, Gregory N.

    2015-01-15

    Flexible electronics and wearable technology represent a novel and growing market for next generation devices. In this work, the authors deposit conductive zinc oxide films by atomic layer deposition onto nylon-6 nonwoven fiber mats and spun-cast films, and quantify the impact that deposition temperature, coating thickness, and aluminum doping have on the conductivity of the coated substrates. The authors produce aluminum doped zinc oxide (AZO) coated fibers with conductivity of 230 S/cm, which is ∼6× more conductive than ZnO coated fibers. Furthermore, the authors demonstrate AZO coated fibers maintain 62% of their conductivity after being bent around a 3 mm radius cylinder. As an example application, the authors fabricate an “all-fiber” pressure sensor using AZO coated nylon-6 electrodes. The sensor signal scales exponentially under small applied force (<50 g/cm{sup 2}), yielding a ∼10{sup 6}× current change under 200 g/cm{sup 2}. This lightweight, flexible, and breathable touch/force sensor could function, for example, as an electronically active nonwoven for personal or engineered system analysis and diagnostics.

  9. A Comparison of ZnO and ZnO(-)

    NASA Technical Reports Server (NTRS)

    Bauschlicher, Charles W., Jr.; Partridge, Harry; Arnold, James (Technical Monitor)

    1998-01-01

    Ab initio electronic structure calculations are performed to support and to help interpret the experimental work reported in the proceeding manuscript. The CCSD(T) approach, in conjunction with a large basis set, is used to compute spectroscopic constants for the X(exp 1)Epsilon(+) and (3)II states of ZnO and the X(exp 2)Epsilon(+) state of ZnO(-). The spectroscopic constants, including the electron affinity, are in good agreement with experiment. The ZnO EA is significantly larger than that of O, thus relative to the atomic ground state asymptotes, ZnO(-) has a larger D(sub o) than the (1)Epsilon(+) state, despite the fact that the extra electron goes into an antibonding orbital. The changes in spectroscopic constants can be understood in terms of the X(exp 1)Epsilon(+) formally dissociating to Zn (1)S + O (1)D while the (3)II and (2)Epsilon(+) states dissociate to Zn (1)S + O (3)P and Zn (1) and O(-) (2)P, respectively.

  10. Study of structure and properties of oxide electrode materials (Fe3O4, AZO, SRO) and their device applications

    NASA Astrophysics Data System (ADS)

    Olga, Chichvarina

    Ferroelectric thin film capacitor heterostructures have attracted considerable attention in the last decade because of their potential applications in piezoelectric sensors, actuators, power generators and non-volatile memory devices. Strongly correlated all-perovskite oxide heterojunctions are of a particular interest, as their material properties (electronic, structural, magnetic and optical, etc.) can be tuned via doping, interface effect, applied electrical field, and formation of two-dimensional electron gas (2DEG), etc. The right selection of electrode material for this type of capacitor-like structures may modify and enhance the performance of a device, as the electrode/barrier layer interfaces can significantly influence its macroscopic properties. Although there is a number of reports on the effect of electrode interfaces on the properties of PZT capacitors deposited on SRO buffered STO substrate, very little is known about Fe3O4/PZT and AZO/PZT electrode interfaces. This thesis comprises two parts. In the first part we present a systematic study of the structural, transport, magnetic and optical properties of oxide thin films: AZO, Fe3O4 and SRO. These monolayers were fabricated via pulsed laser deposition technique on quartz, MgO and STO substrates respectively. The second part of this thesis elucidates the behaviour of these three oxides as electrode components in PZT/SRO/STO heteroepitaxial structures. The highlights of the work are summarized below: 1) Zinc-blende (ZB) phase of ZnO was predicted to possess higher values of conductivity and higher doping efficiency compared to its wurzite counterpart and thus has greater chances of facilitating the fabrication of ZnO-electrode-based devices. However, zinc-blende is a metastable phase, and it is challenging to obtain single-phase ZB. To tackle this challenge we tuned parameters such-as film thickness, substrate and annealing effect, and achieved a ZB phase of Ti-doped ZnO, ZB-(Zn1-xTix)O thin film. An

  11. Detoxification of azo dyes in the context of environmental processes.

    PubMed

    Rawat, Deepak; Mishra, Vandana; Sharma, Radhey Shyam

    2016-07-01

    Azo dyes account for >70% of the global industrial demand (∼9 million tons). Owing to their genotoxic/carcinogenic potential, the annual disposal of ∼4,500,000 tons of dyes and/or degraded products is an environmental and socio-economic concern. In comparison to physico-chemical methods, microbe-mediated dye degradation is considered to be low-input, cost-effective and environmentally-safe. However, under different environmental conditions, interactions of chemically diverse dyes with metabolically diverse microbes produce metabolites of varying toxicity. In addition, majority of studies on microbial dye-degradation focus on decolorization with least attention towards detoxification. Therefore, the environmental significance of microbial dye detoxification research of past >3 decades is critically evaluated with reference to dye structure and the possible influence of microbial interactions in different environments. In the absence of ecosystem-based studies, the results of laboratory-based studies on dye degradation, metabolite production and their genotoxic impact on model organisms are used to predict the possible fate and consequences of azo dyes/metabolites in the environment. In such studies, the predominance of fewer numbers of toxicological assays that too at lower levels of biological organization (molecular/cellular/organismic) suggests its limited ecological significance. Based on critical evaluation of these studies the recommendations on inclusion of multilevel approach (assessment at multiple levels of biological organization), multispecies microcosm approach and native species approach in conjunction with identification of dye metabolites have been made for future studies. Such studies will bridge the gap between the fundamental knowledge on dye-microbe-environment interactions and its application to combat dye-induced environmental toxicity. Thus an environmental perspective on dye toxicity in the background of dye structure and effects of

  12. Evaluating role of immobilized periphyton in bioremediation of azo dye amaranth.

    PubMed

    Shabbir, Sadaf; Faheem, Muhammad; Ali, Naeem; Kerr, Philip G; Wu, Yonghong

    2017-02-01

    The aim of this study was to evaluate the bioremediation capabilities of three kinds of periphyton (i.e. epiphyton, metaphyton and epilithon) immobilized in bioreactors to decolorize and biodegrade the sulphonated azo dye, amaranth. Results showed that periphyton dominated by phyla including Cyanobacteria, Proteobacteria and Bacteroidetes. Complete removal of dye was shown by all the biofilms periphyton (epiphyton showed highest removal efficacy) over a range of initial concentrations (50-500mgL(-1)) within 84h at pH 7 and 30°C. Biodegradation of amaranth was confirmed through FTIR and HPLC and the biodegradation pathways were detected by GC-MS/MS analysis. The azo bonds in the amaranth were successfully broken by periphyton and amaranth was converted to non-toxic, aliphatic compounds including isobutene, acetyl acetate and ethyl acetate. The results showed the potential application of immobilized periphyton at industrial scale for the removal of azo dyes from wastewater containing azo dye amaranth.

  13. Crystal structures, solvatochromisms and DFT computations of three disperse azo dyes having the same azobenzene skeleton

    NASA Astrophysics Data System (ADS)

    Qian, Hui-Fen; Tao, Tao; Feng, Ya-Nan; Wang, Yin-Ge; Huang, Wei

    2016-11-01

    Three disperse azo dyes having the same 4-nitrobenzene/azo/4-aminobenzene skeleton but different color have been structurally and spectrally characterized and compared in this paper. X-ray single-crystal diffraction analysis of compound 3 reveals that it has a planar molecular conformation between the azo and the nitrobenzene units. However, severely twisted aminoazobenzene structures in compounds 1 and 2 are observed because of the steric hindrance effect of ortho chloro and bromo groups. Electronic spectra of 1-3 are closely related to their molecular structures, which demonstrate that the presence of different substituted groups and the spatial crowding effect in the aminoazobenzene backbone leads to the significant alterations of bathochromic and hypochromatic shifts. In addition, theoretic computational studies as well as solvatochromisms for three azo dyes have been included.

  14. Acceptors in ZnO

    SciTech Connect

    Mccluskey, Matthew D.; Corolewski, Caleb; Lv, Jinpeng; Tarun, Marianne C.; Teklemichael, Samuel T.; Walter, Eric D.; Norton, M. G.; Harrison, Kale W.; Ha, Su Y.

    2015-03-21

    Zinc oxide (ZnO) has potential for a range of applications in the area of optoelectronics. The quest for p-type ZnO has focused much attention on acceptors. In this paper, Cu, N, and Li acceptor impurities are discussed. Experimental evidence shows that these point defects have acceptor levels 3.2, 1.5, and 0.8 eV above the valence-band maximum, respectively. The levels are deep because the ZnO valence band is quite low compared to conventional, non-oxide semiconductors. Using MoO2 contacts, the electrical resistivity of ZnO:Li was measured and showed behavior consistent with bulk hole conduction for temperatures above 400 K. A photoluminescence peak in ZnO nanocrystals has been attributed to an acceptor, which may involve a zinc vacancy. High field (W-band) electron paramagnetic resonance measurements on the nanocrystals revealed an axial center with g = 2.0033 and g = 2.0075, along with an isotropic center at g = 2.0053.

  15. Acceptors in ZnO

    SciTech Connect

    McCluskey, Matthew D. Corolewski, Caleb D.; Lv, Jinpeng; Tarun, Marianne C.; Teklemichael, Samuel T.; Walter, Eric D.; Norton, M. Grant; Harrison, Kale W.; Ha, Su

    2015-03-21

    Zinc oxide (ZnO) has potential for a range of applications in the area of optoelectronics. The quest for p-type ZnO has focused much attention on acceptors. In this paper, Cu, N, and Li acceptor impurities are discussed. Experimental evidence indicates these point defects have acceptor levels 3.2, 1.4, and 0.8 eV above the valence-band maximum, respectively. The levels are deep because the ZnO valence band is quite low compared to conventional, non-oxide semiconductors. Using MoO{sub 2} contacts, the electrical resistivity of ZnO:Li was measured and showed behavior consistent with bulk hole conduction for temperatures above 400 K. A photoluminescence peak in ZnO nanocrystals is attributed to an acceptor, which may involve a Zn vacancy. High field (W-band) electron paramagnetic resonance measurements on the nanocrystals revealed an axial center with g{sub ⊥} = 2.0015 and g{sub //} = 2.0056, along with an isotropic center at g = 2.0035.

  16. Homoepitaxial ZnO Film Growth

    NASA Technical Reports Server (NTRS)

    Zhu, Shen; Su, C-H; Lehoczky, S. L.; Harris, M. T.; Callahan, M. J.; McCarty, P.; George, M. A.; Rose, M. Franklin (Technical Monitor)

    2000-01-01

    ZnO films have high potential for many applications, such as surface acoustic wave filters, UV detectors, and light emitting devices due to its structural, electrical, and optical properties. High quality epitaxial films are required for these applications. The Al2O3 substrate is commonly used for ZnO heteroepitaxial growth. Recently, high quality ZnO single crystals are available for grow homoepitaxial films. Epitaxial ZnO films were grown on the two polar surfaces (O-face and Zn-face) of (0001) ZnO single crystal substrates using off-axis magnetron sputtering deposition. As a comparison, films were also deposited on (0001) Al2O3 substrates. It was found that the two polar ZnO surfaces have different photoluminescence (PL) spectrum, surface structure and morphology, which strongly influence the epitaxial film growth. The morphology and structure of homoepitaxial films grown on the ZnO substrates were different from heteroepitaxial films grown on the Al2O3. An interesting result shows that high temperature annealing of ZnO single crystals will improve the surface structure on the O-face surface rather than the opposite surface. The measurements of PL, low-angle incident x-ray diffraction, and atomic force microscopy of ZnO films indicate that the O-terminated surface is better for ZnO epitaxial film growth.

  17. Self-structured surface patterns on molecular azo glass films induced by laser light irradiation.

    PubMed

    Yin, Jianjun; Ye, Gang; Wang, Xiaogong

    2010-05-04

    In this work, formation of photoinduced self-structured surface pattern and its correlation with chromophoric structures were studied by using a series of star-shaped azo compounds, which exist as stable molecular glass at room temperature. For the synthesis, a star-shaped precursor (Tr-AN) was prepared by a ring-open reaction between 1, 3, 5-triglycidyl isocyanurate and N-methylaniline. The star-shaped azo compounds were then synthesized through azo-coupling reactions between the precursor and diazonium salts of 4-nitroaniline, 2-methyl-4-nitroaniline, and 4-aminobenzonitrile, respectively. Through these steps, three azo compounds were obtained to bear different donor-acceptor type azo chromophores at the peripheral positions. The formation of the photoinduced self-structured patterns was investigated by irradiating solid thin films of the molecular azo glass with a uniform laser beam (532 nm, 200 mW/cm(2)) at normal incidence. For comparison, formation of surface-relief-gratings (SRGs) was also investigated by exposing the thin films to an interference pattern of the laser beams (532 nm, 80 mW/cm(2)). The results show that SRGs can be inscribed on the films of all three star-shaped azo compounds, but self-structured surface patterns is only observed on film of the azo compound containing 4-cyanoazobenzene moieties (Tr-AZ-CN) under the same irradiation condition. The electron-withdrawing groups, which control the absorption band position, show a significant influence on both the self-structured pattern formation and SRG inscription rate. Under proper experimental conditions, both self-structured surface pattern and SRG can simultaneously be observed on the Tr-AZ-CN films. The observations can lead to a deeper understanding of the photoinduced effects, especially their correlation with molecular structures.

  18. Photoluminescence analysis of self induced planer alignment in azo dye dispersed nematic liquid crystal complex

    SciTech Connect

    Kumar, Rishi Sood, Srishti Raina, K. K.

    2014-04-24

    We have developed azo dye doped nematic liquid crystal complex for advanced photonic liquid crystal display technology aspects. Disperse orange azo dye self introduced planer alignment in the nematic liquid crystal without any surface anchoring treatment. Planer alignment was characterized by optical polarizing microscopy. The electro-optical switching response of dye disperse planer aligned nematic cell was investigated as a function of applied voltage with the help of photoluminescence spectrophotometer for the tuning of photoluminescence contrast.

  19. Computational Study of Monosubstituted Azo(tetrazolepentazolium)-Based Ionic Dimers.

    PubMed

    Pimienta, Ian S O

    2015-06-04

    The structures of monosubstituted azo(tetrazolepentazolium) cations (N11CHR(+)), oxygen-rich anions such as N(NO2)2(-), NO3(-), and ClO4(-), and the corresponding ion pairs are investigated using ab initio quantum chemistry calculations. The substituents (R) used are H, F, CH3, CN, NH2, OH, OCH3, N3, NF2, and C2H3. The stability of the protonated cation is explored by examining the decomposition pathway of the protonated cation (N11CH2(+)) to yield molecular N2 fragments. The heats of formation of these cations, which are based on isodesmic (bond type conserving) reactions, are dependent on the nature of the substituents. Ionic dimer structures are obtained, but side reactions including proton transfer, binding, and hydrogen bonding are observed in the gas phase. Implicit solvation studies are performed to determine the solution properties of the ion pairs.

  20. Photoassisted Holography in Azo Dye Doped Polymer Films.

    PubMed

    Rahmouni, Anouar; Bougdid, Yahya; Moujdi, Sara; Nesterenko, Dmitry V; Sekkat, Zouheir

    2016-11-03

    Holographic storage is one of the most important applications in the field of optics, especially for recording and retrieving data, and information storage by interference patterns in photosensitive materials are no exception in this regard. In this work, we give evidence that holograms recorded by interference of two coherent laser beams in azo dye doped polymer films can be controlled by a third incoherent assisting laser beam. We show that light diffraction can be increased or decreased by an assisting beam depending on the respective orientation of the polarizations of the recording and the assisting beams. We also found that photomanipulation of polarization holograms, prepared by polarization modulation, does not depend on the polarization of the assisting beam, whereas, photomanipulation of holograms prepared by intensity modulation strongly depends on the polarization of the assisting beam. Photoselection is shown to play a major role in the photoassisted diffraction process.

  1. Conductivity of oriented bis-azo polymer films.

    PubMed

    Apitz, Dirk; Bertram, Ralph Peter; Benter, Nils; Sommer-Larsen, Peter; Johansen, Per Michael; Buse, Karsten

    2006-02-13

    The conductivity properties of electro-optic, photoaddressable, dense bis-azo chromophore polymer films are investigated by using samples corona poled at various temperatures. A dielectric spectrometer is applied to measure the frequency dependence of the conductivity at different temperatures before and after heating the material to above the glass transition temperature. The results show that the orientation of the chromophores changes the charge-carrier mobility. Ionic conductivity dominates in a more disordered configuration of the material, while the competing process of hole hopping takes over as a transition to a liquid-crystalline phase occurs when the material is heated to much higher than the glass transition temperature. Such microcrystallization strongly enhances the conductivity.

  2. Heterogenous solar photocatalysis of two commercial reactive azo dyes.

    PubMed

    Dhodapkar, Rita S; Chaturvedi, Vibha; Neti, Nageswara R; Kaul, Santosh N

    2003-01-01

    Two commercial reactive azo dyes--Reactive Black 5 (RB5) and Reactive Orange 16 (RO 16) have been treated by titanium dioxide and Zinc oxide photocatalysts separately under presence of sunlight. It is observed that solar photocatalytic treatment is effective in terms of colour and COD. The photodegradation efficiency of zinc oxide is comparable with TiO2 at pH 5-6 for RO16. The extent of decolourization and degradation of RB5 is greater in presence of zinc oxide photocatalyst than TiO2 at pH 5- 6. Zinc oxide undergoes <1% photodissolution after 6 hours of solar irradiation at working pH.

  3. Preparation of new morphological ZnO and Ce-doped ZnO

    SciTech Connect

    Chelouche, A.; Djouadi, D.; Aksas, A.

    2013-12-16

    ZnO micro-tori and cerium doped hexangulars ZnO have been prepared by the sol-gel method under methanol hypercritical conditions of temperature and pressure. X-ray diffraction (XRD) measurement has revealed the high crystalline quality and the nanometric size of the samples. Scanning electron microscopy (SEM) has shown that the ZnO powder has a torus-like shape while that of ZnO:Ce has a hexangular-like shape, either standing free or inserted into the cores of ZnO tori. Transmission electron microscopy (TEM) has revealed that the ZnO particles have sizes between 25 and 30 nm while Ce-doped ZnO grains have diameters ranging from 75 nm to 100 nm. Photoluminescence spectra at room temperature of the samples have revealed that the introduction of cerium in ZnO reduces the emission intensity lines, particularly the ZnO red and green ones.

  4. Azo dye treatment with simultaneous electricity production in an anaerobic-aerobic sequential reactor and microbial fuel cell coupled system.

    PubMed

    Li, Zhongjian; Zhang, Xingwang; Lin, Jun; Han, Song; Lei, Lecheng

    2010-06-01

    A microbial fuel cell and anaerobic-aerobic sequential reactor coupled system was used for azo dye degradation with simultaneous electricity production. Electricity was produced during the co-metabolism process of glucose and azo dye. A microorganism cultured graphite-granular cathode effectively decreased the charge transfer resistance of the cathode and yielded higher power density. Operation parameters including glucose concentration and hydraulic retention time were optimized. The results indicated that recovering electricity during a sequential aerobic-anaerobic azo dye treatment process enhanced chemical oxygen demand removal and did not decrease azo dye removal. Moreover, UV-vis spectra and GC-MS illustrated that the azo bond was cleaved biologically in the anaerobic chamber and abiotically in the aerobic chamber. The toxic intermediates, aromatic amines, were removed by aerobic treatment. Our work demonstrated that the microbial fuel cell and sequential anode-cathode reactor coupled system could be applied to achieve electricity production with simultaneous azo dye degradation.

  5. Ozonation of hydrolyzed azo dye reactive yellow 84 (CI).

    PubMed

    Koch, M; Yediler, A; Lienert, D; Insel, G; Kettrup, A

    2002-01-01

    The combination of chemical and biological water treatment processes is a promising technique to reduce recalcitrant wastewater loads. The key to the efficiency of such a system is a better understanding of the mechanisms involved during the degradation processes. Ozonation has been applied to many fields in water and wastewater treatment. Especially for textile mill effluents ozonation can achieve high color removal, enhance biodegradability, destroy phenols and reduce the chemical oxygen demand (COD). However, little is known about the reaction intermediates and products formed during ozonation. This work deals with the degradation of hydrolyzed Reactive Yellow 84 (Color Index), a widely used azo dye in textile finishing processes with two monochlorotriazine anchor groups. Ozonation of the hydrolyzed dye in ultra pure water was performed in a laboratory scale cylindric batch reactor. Decolorization, determined by measuring the light absorbance at the maximum wavelength in the visible range (400 nm), was almost complete after 60 and 90 min with an ozone concentration of 18.5 and 9.1 mg/l, respectively. The TOC/TOC0 ratio after ozonation was about 30%, the COD was diminished to 50% of the initial value. The BOD5/COD ratio increased from 0.01 to about 0.8. Oxidation and cleavage of the azo group yield nitrate. Cleavage of the sulfonic acid groups of aromatic rings caused increases in the amount of sulfate. Formic acid and oxalic acid were identified as main oxidation products by high performance ion chromatography (HPIC). The concentrations of these major products were monitored at defined time intervals during ozonation.

  6. Photoinduced self-structured surface pattern on a molecular azo glass film: structure-property relationship and wavelength correlation.

    PubMed

    Wang, Xiaolin; Yin, Jianjun; Wang, Xiaogong

    2011-10-18

    In this study, three series of star-shaped molecular azo glasses were synthesized, and self-structured surface pattern formation on the azo compound films was studied by laser irradiation at different wavelengths. The molecular azo glasses were synthesized from three core precursors (Tr-AN, Tr-35AN, Tr-H35AN), which were prepared by ring-opening reactions between 1,3,5-triglycidyl isocyanurate and corresponding aniline derivatives. The star-shaped azo compounds were obtained through azo-coupling reactions between the core precursors and diazonium salts of 4-chloroaniline, 4-aminobenzonitrile, and 4-nitroaniline, respectively. By using the two-step reaction scheme, three series of azo compounds with different structures were obtained. The core precursors and azo compounds were characterized by using (1)H NMR, FT-IR, UV-vis, mass spectrometry, and thermal analyses. The self-structured surface pattern formation on films of the azo compounds was studied by irradiating the azo compound films with a normal-incident laser beam at different wavelengths (488, 532, and 589 nm). The results show that the photoinduced surface pattern formation behavior is closely related to the structure of the azo compounds, excitation wavelength, and light polarization conditions. The absorption band position of the π-π* transition is mainly determined by the electron-withdrawing groups on the azo chromophores. When the excitation wavelength is between λ(max) and the band tail at the longer wavelength side, the self-structured surface patterns can be more efficiently induced to form on the films. The 3,5-dimethyl substitution on azo chromophores inhibits the surface pattern formation for certain excitation wavelengths. Increasing molecular interaction also shows an effect of restraining the surface pattern formation. The irradiations with linearly and circularly polarized light cause significant differences in the alignment manner of the pillarlike structures and their saturated height.

  7. Second-order nonlinear optical Langmuir-Blodgett films based on a series of azo rare-earth coordination compounds

    SciTech Connect

    Gao, L.H.; Wang, K.Z.; Huang, C.H.

    1995-06-01

    A series of novel azo dyes composed of a lanthanide complex anion and an azo cation, in which strongly electron-donating (dihexadecylamino)phenyl and electron-accepting pyridinium groups are separated by an azo group, was designed as second-order nonlinear optical Langmuir-Blodgett (LB) film materials. The compounds are of good film-forming properties. The values of second-order molecular hyperpolarizability {beta} were determined to be (1.20-3.03) x 10{sup {minus}27} esu, comparable to the largest value known for azo LB materials. The compounds studied may be attactive in the application in future optical devices. 13 refs., 5 figs., 1 tab.

  8. Electrical, optical, and electronic properties of Al:ZnO films in a wide doping range

    SciTech Connect

    Valenti, Ilaria; Valeri, Sergio; Perucchi, Andrea; Di Pietro, Paola; Lupi, Stefano; Torelli, Piero

    2015-10-28

    The combination of photoemission spectroscopies, infrared and UV-VIS absorption, and electric measurements has allowed to clarify the mechanisms governing the conductivity and the electronic properties of Al-doped ZnO (AZO) films in a wide doping range. The contribution of defect-related in-gap states to conduction has been excluded in optimally doped films (around 4 at. %). The appearance of gap states at high doping, the disappearance of occupied DOS at Fermi level, and the bands evolution complete the picture of electronic structure in AZO when doped above 4 at. %. In this situation, compensating defects deplete the conduction band and increase the electronic bandgap of the material. Electrical measurements and figure of merit determination confirm the high quality of the films obtained by magnetron sputtering, and thus allow to extend their properties to AZO films in general.

  9. Electrical, optical, and electronic properties of Al:ZnO films in a wide doping range

    NASA Astrophysics Data System (ADS)

    Valenti, Ilaria; Benedetti, Stefania; di Bona, Alessandro; Lollobrigida, Valerio; Perucchi, Andrea; Di Pietro, Paola; Lupi, Stefano; Valeri, Sergio; Torelli, Piero

    2015-10-01

    The combination of photoemission spectroscopies, infrared and UV-VIS absorption, and electric measurements has allowed to clarify the mechanisms governing the conductivity and the electronic properties of Al-doped ZnO (AZO) films in a wide doping range. The contribution of defect-related in-gap states to conduction has been excluded in optimally doped films (around 4 at. %). The appearance of gap states at high doping, the disappearance of occupied DOS at Fermi level, and the bands evolution complete the picture of electronic structure in AZO when doped above 4 at. %. In this situation, compensating defects deplete the conduction band and increase the electronic bandgap of the material. Electrical measurements and figure of merit determination confirm the high quality of the films obtained by magnetron sputtering, and thus allow to extend their properties to AZO films in general.

  10. Synchrotron radiation based cross-sectional scanning photoelectron microscopy and spectroscopy of n-ZnO:Al/p-GaN:Mg heterojunction

    SciTech Connect

    Lee, Kai-Hsuan; Chen, Chia-Hao; Chang, Ping-Chuan; Chen, Tse-Pu; Chang, Sheng-Po; Chang, Shoou-Jinn

    2013-02-18

    Al-doped ZnO (AZO) deposited by radio frequency co-sputtering is formed on epitaxial Mg-doped GaN template at room temperature to achieve n-AZO/p-GaN heterojunction. Alignment of AZO and GaN bands is investigated using synchrotron radiation based cross-sectional scanning photoelectron microscopy and spectroscopy on the nonpolar side-facet of a vertically c-axis aligned heterostructure. It shows type-II band configuration with valence band offset of 1.63 {+-} 0.1 eV and conduction band offset of 1.61 {+-} 0.1 eV, respectively. Rectification behavior is clearly observed, with a ratio of forward-to-reverse current up to six orders of magnitude when the bias is applied across the p-n junction.

  11. One-dimensional ZnO nanostructures.

    PubMed

    Jayadevan, K P; Tseng, T Y

    2012-06-01

    The wide-gap semiconductor ZnO with nanostructures such as nanoparticle, nanorod, nanowire, nanobelt, nanotube has high potential for a variety of applications. This article reviews the fundamentals of one-dimensional ZnO nanostructures, including processing, structure, property, application and their processing-microstructure-property correlation. Various fabrication methods of the ZnO nanostructures including vapor-liquid-solid process, vapor-solid growth, solution growth, solvothermal growth, template-assisted growth and self-assembly are introduced. The characterization and properties of the ZnO nanostructures are described. The possible applications of these nanostructures are also discussed.

  12. Thermal ionization induced metal-semiconductor transition and room temperature ferromagnetism in trivalent doped ZnO codoped with lithium

    SciTech Connect

    Sivagamasundari, A.; Chandrasekar, S.; Pugaze, R.; Kannan, R.; Rajagopan, S.

    2014-03-07

    Thermal ionization induced metallic to semiconductor (MST) transition occurring at 460 K for Zn{sub 0.97}Al{sub 0.03}O, 463 K for Zn{sub 0.94}Al{sub 0.03}Li{sub 0.03}O, and 503 K for Zn{sub 0.91}Al{sub 0.03}Li{sub 0.03}Mn{sub 0.03}O has been found in the sol-gel synthesized (using hexamethylenetetramine), trivalent doped (Al, Mn) ZnO codoped with lithium. Increase in the thermally ionized carrier concentration due to Al doping is responsible for near band edge (NBE) peak shift causing Fermi level to move into conduction band making it metallic consistent with resistivity results. Free carrier (thermally activated) neutralization with ionized donor is responsible for semiconducting nature, which is supported from the free carrier screening produced energy shift in the NBE of photoluminescence peak. Furthermore, independently band gap shrinkage is also obtained from UV-Visible studies confirming localization induced MST. An anti-correlation is found between defect density (DLE) and room temperature ferromagnetism (RTFM) indicating intrinsic defects are not directly responsible for RTFM.

  13. Thermal ionization induced metal-semiconductor transition and room temperature ferromagnetism in trivalent doped ZnO codoped with lithium

    NASA Astrophysics Data System (ADS)

    Sivagamasundari, A.; Chandrasekar, S.; Pugaze, R.; Rajagopan, S.; Kannan, R.

    2014-03-01

    Thermal ionization induced metallic to semiconductor (MST) transition occurring at 460 K for Zn0.97Al0.03O, 463 K for Zn0.94Al0.03Li0.03O, and 503 K for Zn0.91Al0.03Li0.03Mn0.03O has been found in the sol-gel synthesized (using hexamethylenetetramine), trivalent doped (Al, Mn) ZnO codoped with lithium. Increase in the thermally ionized carrier concentration due to Al doping is responsible for near band edge (NBE) peak shift causing Fermi level to move into conduction band making it metallic consistent with resistivity results. Free carrier (thermally activated) neutralization with ionized donor is responsible for semiconducting nature, which is supported from the free carrier screening produced energy shift in the NBE of photoluminescence peak. Furthermore, independently band gap shrinkage is also obtained from UV-Visible studies confirming localization induced MST. An anti-correlation is found between defect density (DLE) and room temperature ferromagnetism (RTFM) indicating intrinsic defects are not directly responsible for RTFM.

  14. Low substrate temperature fabrication of high-performance metal oxide thin-film by magnetron sputtering with target self-heating

    SciTech Connect

    Yang, W. F.; Liu, Z. G.; Wu, Z. Y.; Hong, M. H.; Wang, C. F.; Lee, Alex Y. S.; Gong, H.

    2013-03-18

    Al-doped ZnO (AZO) films with high transmittance and low resistivity were achieved on low temperature substrates by radio frequency magnetron sputtering using a high temperature target. By investigating the effect of target temperature (T{sub G}) on electrical and optical properties, the origin of electrical conduction is verified as the effect of the high T{sub G}, which enhances crystal quality that provides higher mobility of electrons as well as more effective activation for the Al dopants. The optical bandgap increases from 3.30 eV for insulating ZnO to 3.77 eV for conducting AZO grown at high T{sub G}, and is associated with conduction-band filling up to 1.13 eV due to the Burstein-Moss effect.

  15. Kinetic characteristics of bacterial azo-dye decolorization by Pseudomonas luteola.

    PubMed

    Chang, J S; Chou, C; Lin, Y C; Lin, P J; Ho, J Y; Hu, T L

    2001-08-01

    A Pseudomonas luteola strain expressing azoreductase activity was utilized to remove the color of an azo dye (reactive red 22) from contaminated solutions. The effects of substrate concentrations, medium compositions, and operation parameters (e.g., pH, temperature, dissolved oxygen, etc.) on decolorization of the azo dye by a P. luteola strain were systematically investigated to reveal the key factors that dominate the performance of azo-dye decolorization. The metabolites resulting from bacterial decolorization were analyzed by high-performance liquid chromatography (HPLC) and mass spectrometery (MS). The results show that the dissolved oxygen and glucose concentration retarded decolorization of reactive red 22 by P. luteola. The optimal azo-dye decolorization occurred at 37 degrees C, while more rapid decolorization took place over pH 7-9. Yeast extract and tryptone strongly enhanced the decolorization. The Michaelis-Menten model can satisfactorily describe the dependence of specific decolorization rate on the concentration of substrate (reactive red 22 or yeast extract). Decolorization of the azo dye by intact cells of P. luteola was essentially independent of the growth phase, whereas the azoreductase activity of the cell-free extract decreased in the order of late-stationary phase > early-stationary phase > mid-log phase. This suggests that mass transfer of the azo dye across the cell membrane may be the rate-limiting step. The HPLC and MS analyses suggest that both partial reduction and complete cleavage of the azo bond could contribute to decolorization of reactive red 22 by P. luteola.

  16. Preparation of 1,1'-dinitro-3,3'-azo-1,2,4-triazole. [1,1'-dinitro-3,3'-azo-1,2,4-triazole

    DOEpatents

    Lee, K.Y.

    1985-03-05

    A new high density composition of matter, 1,1'-dinitro-3,3'-azo-1,2,4-triazole, has been synthesized using inexpensive, commonly available compounds. This compound has been found to be an explosive, and its use as a propellant is anticipated. 1 fig., 1 tab.

  17. 40 CFR 721.5281 - 2-Naphthalenesulfonic acid, 3-[[4-[(2,4-dimethyl-6-sulfophenyl)azo]-2-methoxy-5-methylphenyl]azo...

    Code of Federal Regulations, 2012 CFR

    2012-07-01

    ... 40 Protection of Environment 32 2012-07-01 2012-07-01 false 2-Naphthalenesulfonic acid, 3- -2-methoxy-5-methylphenyl]azo]-4-hydroxy-7-(phenylamino)-, sodium salt, compd. With 2,2â²,2â³-nitrilotris (9CI). 721.5281 Section 721.5281 Protection of Environment ENVIRONMENTAL PROTECTION AGENCY (CONTINUED) TOXIC SUBSTANCES CONTROL ACT SIGNIFICANT...

  18. 40 CFR 721.5281 - 2-Naphthalenesulfonic acid, 3-[[4-[(2,4-dimethyl-6-sulfophenyl)azo]-2-methoxy-5-methylphenyl]azo...

    Code of Federal Regulations, 2011 CFR

    2011-07-01

    ... 40 Protection of Environment 31 2011-07-01 2011-07-01 false 2-Naphthalenesulfonic acid, 3- -2-methoxy-5-methylphenyl]azo]-4-hydroxy-7-(phenylamino)-, sodium salt, compd. With 2,2â²,2â³-nitrilotris (9CI). 721.5281 Section 721.5281 Protection of Environment ENVIRONMENTAL PROTECTION AGENCY (CONTINUED) TOXIC SUBSTANCES CONTROL ACT SIGNIFICANT...

  19. 40 CFR 721.5281 - 2-Naphthalenesulfonic acid, 3-[[4-[(2,4-dimethyl-6-sulfophenyl)azo]-2-methoxy-5-methylphenyl]azo...

    Code of Federal Regulations, 2010 CFR

    2010-07-01

    ... 40 Protection of Environment 30 2010-07-01 2010-07-01 false 2-Naphthalenesulfonic acid, 3- -2-methoxy-5-methylphenyl]azo]-4-hydroxy-7-(phenylamino)-, sodium salt, compd. With 2,2â²,2â³-nitrilotris (9CI). 721.5281 Section 721.5281 Protection of Environment ENVIRONMENTAL PROTECTION AGENCY (CONTINUED) TOXIC SUBSTANCES CONTROL ACT SIGNIFICANT...

  20. 40 CFR 721.5281 - 2-Naphthalenesulfonic acid, 3-[[4-[(2,4-dimethyl-6-sulfophenyl)azo]-2-methoxy-5-methylphenyl]azo...

    Code of Federal Regulations, 2014 CFR

    2014-07-01

    ... 40 Protection of Environment 31 2014-07-01 2014-07-01 false 2-Naphthalenesulfonic acid, 3- -2-methoxy-5-methylphenyl]azo]-4-hydroxy-7-(phenylamino)-, sodium salt, compd. With 2,2â²,2â³-nitrilotris (9CI). 721.5281 Section 721.5281 Protection of Environment ENVIRONMENTAL PROTECTION AGENCY (CONTINUED) TOXIC SUBSTANCES CONTROL ACT SIGNIFICANT...

  1. 40 CFR 721.5281 - 2-Naphthalenesulfonic acid, 3-[[4-[(2,4-dimethyl-6-sulfophenyl)azo]-2-methoxy-5-methylphenyl]azo...

    Code of Federal Regulations, 2013 CFR

    2013-07-01

    ... 40 Protection of Environment 32 2013-07-01 2013-07-01 false 2-Naphthalenesulfonic acid, 3- -2-methoxy-5-methylphenyl]azo]-4-hydroxy-7-(phenylamino)-, sodium salt, compd. With 2,2â²,2â³-nitrilotris (9CI). 721.5281 Section 721.5281 Protection of Environment ENVIRONMENTAL PROTECTION AGENCY (CONTINUED) TOXIC SUBSTANCES CONTROL ACT SIGNIFICANT...

  2. 2H and 27Al solid-state NMR study of the local environments in Al-doped 2-line ferrihydrite, goethite, and lepidocrocite

    SciTech Connect

    Kim, Jongsik; Ilott, Andrew J.; Middlemiss, Derek S.; Chernova, Natasha A.; Pinney, Nathan; Morgan, Dane; Grey, Clare P.

    2015-05-13

    Although substitution of aluminum into iron oxides and oxyhydroxides has been extensively studied, it is difficult to obtain accurate incorporation levels. Assessing the distribution of dopants within these materials has proven especially challenging because bulk analytical techniques cannot typically determine whether dopants are substituted directly into the bulk iron oxide or oxyhydroxide phase or if they form separate, minor phase impurities. These differences have important implications for the chemistry of these iron-containing materials, which are ubiquitous in the environment. In this work, 27Al and 2H NMR experiments are performed on series of Al-substituted goethite, lepidocrocite, and 2-line ferrihydrite in order to develop an NMR method to track Al substitution. The extent of Al substitution into the structural frameworks of each compound is quantified by comparing quantitative 27Al MAS NMR results with those from elemental analysis. Magnetic measurements are performed for the goethite series to compare with NMR measurements. Static 27Al spin–echo mapping experiments are used to probe the local environments around the Al substituents, providing clear evidence that they are incorporated into the bulk iron phases. As a result, predictions of the 2H and 27Al NMR hyperfine contact shifts in Al-doped goethite and lepidocrocite, obtained from a combined first-principles and empirical magnetic scaling approach, give further insight into the distribution of the dopants within these phases.

  3. Effect of ball-milling and Fe-/Al-doping on the structural aspect and visible light photocatalytic activity of TiO2 towards Escherichia coli bacteria abatement.

    PubMed

    Schlur, Laurent; Begin-Colin, Sylvie; Gilliot, Pierre; Gallart, Mathieu; Carré, Gaëlle; Zafeiratos, Spiros; Keller, Nicolas; Keller, Valérie; André, Philippe; Greneche, Jean-Marc; Hezard, Bernard; Desmonts, Marie-Hélène; Pourroy, Geneviève

    2014-05-01

    Escherichia coli abatement was studied in liquid phase under visible light in the presence of two commercial titania photocatalysts, and of Fe- and Al-doped titania samples prepared by high energy ball-milling. The two commercial titania photocatalysts, Aeroxide P25 (Evonik industries) exhibiting both rutile and anatase structures and MPT625 (Ishihara Sangyo Kaisha), a Fe-, Al-, P- and S-doped titania exhibiting only the rutile phase, are active suggesting that neither the structure nor the doping is the driving parameter. Although the MPT625 UV-visible spectrum is shifted towards the visible domain with respect to the P25 one, the effect on bacteria is not increased. On the other hand, the ball milled iron-doped P25 samples exhibit low activities in bacteria abatement under visible light due to charge recombinations unfavorable to catalysis as shown by photoluminescence measurements. While doping elements are in interstitial positions within the rutile structure in MPT625 sample, they are located at the surface in ball milled samples and in isolated octahedral units according to (57)Fe Mössbauer spectrometry. The location of doping elements at the surface is suggested to be responsible for the sample cytotoxicity observed in the dark.

  4. The non-enzymatic reduction of azo dyes by flavin and nicotinamide cofactors under varying conditions.

    PubMed

    Morrison, Jessica M; John, Gilbert H

    2013-10-01

    Azo dyes are ubiquitous in products and often become environmental pollutants due to their anthropogenic nature. Azoreductases are enzymes which are present within many bacteria and are capable of breaking down the azo dyes via reduction of the azo bond. Often, though, carcinogenic aromatic amines are formed as metabolites and are of concern to humans. Azoreductases function via an oxidation-reduction reaction and require cofactors (a nicotinamide cofactor and sometimes a flavin cofactor) to perform their function. Non-enzymatic reduction of azo dyes in the absence of an azoreductase enzyme has been suggested in previous studies, but has never been studied in detail in terms of varying cofactor combinations, different oxygen states or pHs, nor has the enzymatic reduction been compared to azoreduction in terms of dye reduction or metabolites produced, which was the aim of this study. Reduction of azo dyes by different cofactor combinations was found to occur under both aerobic and anaerobic conditions and under physiologically-relevant pHs to produce the same metabolites as an azoreductase. Our results show that, in some cases, the non-enzymatic reduction by the cofactors was found to be equal to that seen with the azoreductase, suggesting that all dye reduction in these cases is due to the cofactors themselves. This study details the importance of the use of a cofactor-only control when studying azoreductase enzymes.

  5. Electrolysis within anaerobic bioreactors stimulates breakdown of toxic products from azo dye treatment.

    PubMed

    Gavazza, Sávia; Guzman, Juan J L; Angenent, Largus T

    2015-04-01

    Azo dyes are the most widely used coloring agents in the textile industry, but are difficult to treat. When textile effluents are discharged into waterways, azo dyes and their degradation products are known to be environmentally toxic. An electrochemical system consisting of a graphite-plate anode and a stainless-steel mesh cathode was placed into a lab-scale anaerobic bioreactor to evaluate the removal of an azo dye (Direct Black 22) from synthetic textile wastewater. At applied potentials of 2.5 and 3.0 V when water electrolysis occurs, no improvement in azo dye removal efficiency was observed compared to the control reactor (an integrated system with electrodes but without an applied potential). However, applying such electric potentials produces oxygen via electrolysis and promoted the aerobic degradation of aromatic amines, which are toxic, intermediate products of anaerobic azo dye degradation. The removal of these amines indicates a decrease in overall toxicity of the effluent from a single-stage anaerobic bioreactor, which warrants further optimization in anaerobic digestion.

  6. Comparative mutagenicity studies of azo dyes and their reduction products in Salmonella typhimurium

    SciTech Connect

    Krishna, G.; Xu, J.; Nath, J.

    1986-01-01

    The arabinose-resistant and Ames assay systems of Salmonella typhimurium were used to evaluate the mutagenic potential of azo dyes and their aromatic amine reduction products. Azo dyes, namely direct black 38, direct blue 15, and direct red 2, were mutagenic in the arabinose-resistant and Ames assays with both hamster and rat liver S9 activation. Both assays gave relatively higher mutagenic responses with hamster S9. Reduction products of these dyes, namely benzidine, o-dianisidine, and o-tolidine, were mutagenic in the Ames assay. Benzidine was weakly mutagenic and o-dianisidine and o-tolidine were nonmutagenic in the arabinose-resistant assay. These results indicate that both arabinose-resistant tester SV50 and Ames tester TA98 were sensitive in detecting mutagenicity of azo dyes. The use of the standard plate protocol with Ames tester TA98 is more efficient than the modified azo dye protocol in detecting mutagenicity of aromatic amine reduction products. Additional modifications in either the standard plate or modified azo dye protocols may improve detection of mutagenicity of these compounds in the arabinose-resistant assay system.

  7. Decolorization of azo dyes (Direct Blue 151 and Direct Red 31) by moderately alkaliphilic bacterial consortium.

    PubMed

    Lalnunhlimi, Sylvine; Krishnaswamy, Veenagayathri

    2016-01-01

    Removal of synthetic dyes is one of the main challenges before releasing the wastes discharged by textile industries. Biodegradation of azo dyes by alkaliphilic bacterial consortium is one of the environmental-friendly methods used for the removal of dyes from textile effluents. Hence, this study presents isolation of a bacterial consortium from soil samples of saline environment and its use for the decolorization of azo dyes, Direct Blue 151 (DB 151) and Direct Red 31 (DR 31). The decolorization of azo dyes was studied at various concentrations (100-300mg/L). The bacterial consortium, when subjected to an application of 200mg/L of the dyes, decolorized DB 151 and DR 31 by 97.57% and 95.25% respectively, within 5 days. The growth of the bacterial consortium was optimized with pH, temperature, and carbon and nitrogen sources; and decolorization of azo dyes was analyzed. In this study, the decolorization efficiency of mixed dyes was improved with yeast extract and sucrose, which were used as nitrogen and carbon sources, respectively. Such an alkaliphilic bacterial consortium can be used in the removal of azo dyes from contaminated saline environment.

  8. Use of titanium dioxide photocatalysis on the remediation of model textile wastewaters containing azo dyes.

    PubMed

    Saggioro, Enrico Mendes; Oliveira, Anabela Sousa; Pavesi, Thelma; Maia, Cátia Gil; Ferreira, Luis Filipe Vieira; Moreira, Josino Costa

    2011-12-14

    The photocatalytic degradation of two commercial textile azo dyes, namely C.I Reactive Black 5 and C.I Reactive Red 239, has been studied. TiO(2) P25 Degussa was used as catalyst and photodegradation was carried out in aqueous solution under artificial irradiation with a 125 W mercury vapor lamp. The effects of the amount of TiO(2) used, UV-light irradiation time, pH of the solution under treatment, initial concentration of the azo dye and addition of different concentrations of hydrogen peroxide were investigated. The effect of the simultaneous photodegradation of the two azo dyes was also investigated and we observed that the degradation rates achieved in mono and bi-component systems were identical. The repeatability of photocatalytic activity of the photocatalyst was also tested. After five cycles of TiO(2) reuse the rate of colour lost was still 77% of the initial rate. The degradation was followed monitoring the change of azo dye concentration by UV-Vis spectroscopy. Results show that the use of an efficient photocatalyst and the adequate selection of optimal operational parameters may easily lead to a complete decolorization of the aqueous solutions of both azo dyes.

  9. Decolorization of azo dyes (Direct Blue 151 and Direct Red 31) by moderately alkaliphilic bacterial consortium

    PubMed Central

    Lalnunhlimi, Sylvine; Krishnaswamy, Veenagayathri

    2016-01-01

    Removal of synthetic dyes is one of the main challenges before releasing the wastes discharged by textile industries. Biodegradation of azo dyes by alkaliphilic bacterial consortium is one of the environmental-friendly methods used for the removal of dyes from textile effluents. Hence, this study presents isolation of a bacterial consortium from soil samples of saline environment and its use for the decolorization of azo dyes, Direct Blue 151 (DB 151) and Direct Red 31 (DR 31). The decolorization of azo dyes was studied at various concentrations (100–300 mg/L). The bacterial consortium, when subjected to an application of 200 mg/L of the dyes, decolorized DB 151 and DR 31 by 97.57% and 95.25% respectively, within 5 days. The growth of the bacterial consortium was optimized with pH, temperature, and carbon and nitrogen sources; and decolorization of azo dyes was analyzed. In this study, the decolorization efficiency of mixed dyes was improved with yeast extract and sucrose, which were used as nitrogen and carbon sources, respectively. Such an alkaliphilic bacterial consortium can be used in the removal of azo dyes from contaminated saline environment. PMID:26887225

  10. Reduction and partial degradation mechanisms of naphthylaminesulfonic azo dye amaranth by Shewanella decolorationis S12.

    PubMed

    Hong, Yiguo; Guo, Jun; Xu, Zhicheng; Mo, Cuiyun; Xu, Meiying; Sun, Guoping

    2007-06-01

    Reduction and biodegradation mechanisms of naphthylaminesulfonic azo dye amaranth using a newly isolated Shewanella decolorationis strain S12 were investigated. Under anaerobic conditions, amaranth was reduced by strain S12, and a stoichiometric amount of two reduction products RP-1 and RP-2 were generated. UV/visible spectrophotometric and high performance liquid chromatography (HPLC) analysis indicated that RP-1 and RP-2 were 1-aminenaphthylene -4-sulfonic acid and 1-aminenaphthylene-2-hydroxy-3, 6-disulfonic acid. The result strongly supports a mechanism of azo dye reduction by the process via the reductive cleavage of the azo bond to form corresponding aromatic amines. The result of HPLC analyses revealed that these aromatic amines were not able to be mineralized by strain S12 under anaerobic conditions. But after re-aeration of the decolorized culture, RP-2 was mineralized completely by this microorganism, but the consumption of RP-1 was not observed. Ames test showed that amaranth had mutagenic but no cytotoxic potential. The mutagenic potential was relieved after the anaerobic treatment with strain S12 as the mutagenic effect of the two reduction products from amaranth was not detected by Ames test. Thus, the ability of strain S12 to reduce and partially mineralize the naphthylaminesulfonic azo dye efficiently was demonstrated, which can potentially be used to biodegrade and detoxify wastewater containing azo dyes using an alternating anaerobic/aerobic treatment procedure.

  11. Azo dye decolorization by a new fungal isolate, Penicillium sp. QQ and fungal-bacterial cocultures.

    PubMed

    Gou, Min; Qu, Yuanyuan; Zhou, Jiti; Ma, Fang; Tan, Liang

    2009-10-15

    A new azo dyes-decolorizing fungi strain QQ was isolated from activated sludge. It was identified as Penicillium sp. based on 26S rRNA gene sequence analysis. The study indicated that strain QQ could aerobically decolorize Reactive Brilliant Red X-3B by the way of bioadsorption, and nutrient-poor medium was more beneficial for adsorption. Decolorization rate was inversely proportional to the size of mycelial pellets. The optimum pH was observed at 4 or 5 for X-3B decolorization. There was still 70% color removal when salinity increased to 6%. By contrast with aerobic decolorization, the degradation of azo dyes occurred under anaerobic conditions, and some azo dyes could be absolutely decolorized. Furthermore, the decolorization of azo dyes by fungal-bacterial cocultures was investigated. The results demonstrated that strain QQ and Sphingomonas xenophaga QYY cocultures performed better than any single strain did. Weak acidity conditions and the presence of small amount of surfactant could enhance the ability of consortium to decolorize azo dyes.

  12. 40 CFR 721.5276 - 2-Naphthalenol, heptyl-1-[[(4-phenylazo)phenyl]azo]-, ar′,ar″-Me derivs.

    Code of Federal Regulations, 2013 CFR

    2013-07-01

    ... Specific Chemical Substances § 721.5276 2-Naphthalenol, heptyl-1- azo]-, ar′,ar″-Me derivs. (a) Chemical...-naphthalenol, heptyl-1- azo]-, ar′,ar″-Me derivs (PMN P-95-538) is subject to reporting under this section...

  13. 40 CFR 721.5276 - 2-Naphthalenol, heptyl-1-[[(4-phenylazo)phenyl]azo]-, ar′,ar″-Me derivs.

    Code of Federal Regulations, 2011 CFR

    2011-07-01

    ... Specific Chemical Substances § 721.5276 2-Naphthalenol, heptyl-1- azo]-, ar′,ar″-Me derivs. (a) Chemical...-naphthalenol, heptyl-1- azo]-, ar′,ar″-Me derivs (PMN P-95-538) is subject to reporting under this section...

  14. 40 CFR 721.5276 - 2-Naphthalenol, heptyl-1-[[(4-phenylazo)phenyl]azo]-, ar′,ar″-Me derivs.

    Code of Federal Regulations, 2012 CFR

    2012-07-01

    ... Specific Chemical Substances § 721.5276 2-Naphthalenol, heptyl-1- azo]-, ar′,ar″-Me derivs. (a) Chemical...-naphthalenol, heptyl-1- azo]-, ar′,ar″-Me derivs (PMN P-95-538) is subject to reporting under this section...

  15. 40 CFR 721.5276 - 2-Naphthalenol, heptyl-1-[[(4-phenylazo)phenyl]azo]-, ar′,ar″-Me derivs.

    Code of Federal Regulations, 2014 CFR

    2014-07-01

    ... Specific Chemical Substances § 721.5276 2-Naphthalenol, heptyl-1- azo]-, ar′,ar″-Me derivs. (a) Chemical...-naphthalenol, heptyl-1- azo]-, ar′,ar″-Me derivs (PMN P-95-538) is subject to reporting under this section...

  16. 40 CFR 721.5276 - 2-Naphthalenol, heptyl-1-[[(4-phenylazo)phenyl]azo]-, ar′,ar″-Me derivs.

    Code of Federal Regulations, 2010 CFR

    2010-07-01

    ... Specific Chemical Substances § 721.5276 2-Naphthalenol, heptyl-1- azo]-, ar′,ar″-Me derivs. (a) Chemical...-naphthalenol, heptyl-1- azo]-, ar′,ar″-Me derivs (PMN P-95-538) is subject to reporting under this section...

  17. Photoinduced Birefringence in Azo-Dye Doped Polyurethane

    NASA Astrophysics Data System (ADS)

    Aleksejeva, J.; Gerbreders, A.; Reinfelde, M.; Teteris, J.

    2011-01-01

    In this report we describe a photoinduced birefringence in disperse red (DR1) azo-dye doped polyurethane films. DR1 dye molecules in these films are chemically bound with the polyurethane polymer's main chain. Under laser radiation the DR1 molecules experience the isomerization process; as a result, the dipole moment of such a molecule changes and they align in the presence of electric field. Photo-birefringence was induced by linearly polarized laser radiation (532 nm, 448 nm, 375 nm and 632.8 nm) in the films with various concentrations of DR1 dye. The photo-induced birefringence (PIBR) Δn was measured at 634 nm wavelength, and its dependences on the pumping beam wavelength and intensity were evaluated. The Δn relaxation was studied both in the dark and under light illumi-nation. In DR1-doped polyurethane films the holographic recording was performed using laser light radiation (532 nm). The profile of surface relief grating (SRG) was studied using AFM. The relationship between SRG formation and PIBR is discussed.

  18. Confinement of surface patterning in azo-polymer thin films.

    PubMed

    Yager, Kevin G; Barrett, Christopher J

    2007-03-07

    Azobenzene polymer thin films are known to spontaneously generate surface patterns in response to incident light gradients. This peculiar process is investigated in terms of the dynamics of the various azobenzene photomotions, which occur on different length scales. In particular, the formation and thermal erasure of surface relief gratings are measured as a function of film thickness and by using combinatorial samples with thickness gradients. The thermal erasure of gratings in this system provides a direct measure of the glass-transition temperature, which is found to deviate substantially from the bulk value. Thin azo films exhibit a glass transition up to 50 K higher than the bulk. These dynamical measurements allow the authors to probe the length scale of mass transport, which is found to be approximately 150 nm. Furthermore, surface mass transport is completely arrested in thin films<40 nm. According to these results, mass transport involves the coordinated motion of many polymer chains in the depth of the sample, rather than surface diffusion of individual chains.

  19. The in situ generation and reactive quench of diazonium compounds in the synthesis of azo compounds in microreactors

    PubMed Central

    Akwi, Faith M

    2016-01-01

    Summary In this paper, a micro-fluidic optimized process for the continuous flow synthesis of azo compounds is presented. The continuous flow synthesis of Sudan II azo dye was used as a model reaction for the study. At found optimal azo coupling reaction temperature and pH an investigation of the optimum flow rates of the reactants for the diazotization and azo coupling reactions in Little Things Factory-MS microreactors was performed. A conversion of 98% was achieved in approximately 2.4 minutes and a small library of azo compounds was thus generated under these reaction conditions from couplers with aminated or hydroxylated aromatic systems. The scaled up synthesis of these compounds in PTFE tubing (i.d. 1.5 mm) was also investigated, where good reaction conversions ranging between 66–91% were attained. PMID:27829903

  20. Different properties of aluminum doped zinc oxide nanostructured thin films prepared by radio frequency magnetron sputtering

    SciTech Connect

    Bidmeshkipour, Samina Shahtahmasebi, Nasser

    2013-06-15

    Aluminium doped zinc oxide (AZO) nanostructured thin films are prepared by radio frequency magnetron sputtering on glass substrate using specifically designed ZnO target containing different amount of Al{sub 2}O{sub 3} powder as the Al doping source. The optical properties of the aluminium doped zinc oxide films are investigated. The topography of the deposited films were investigated by Atomic Force Microscopy. Variation of the refractive index by annealing temperature are considered and it is seen that the refractive index increases by increasing the annealing temperature.

  1. Quantification of Adsorption of Azo Dye Molecules on Graphene Oxide Using Optical Spectroscopy

    NASA Astrophysics Data System (ADS)

    Chaudhary, Raghvendra Pratap; Pawar, Pranav Bhagwan; Vaibhav, Kumar; Saxena, Sumit; Shukla, Shobha

    2017-02-01

    The presence of azo dye molecules in effluents is a source of water pollution and an environmental hazard. Thus, it is very important to separate out such dye molecules. We have investigated the use of graphene oxide (GO) for the purification of dye-contaminated water. The adsorption efficiency of GO in the degradation of azo dye molecules and the interaction mechanism has been estimated using Ultra Violet-Visible absorption spectroscopy. The charge on the dye molecules along with steric hinderance due to their molecular structure is understood to be detrimental in the adsorption and removal of such dyes. Spectroscopic studies suggest that GO can be used as a potential candidate for efficient removal of cationic azo-dye molecules by adsorption.

  2. Quantification of Adsorption of Azo Dye Molecules on Graphene Oxide Using Optical Spectroscopy

    NASA Astrophysics Data System (ADS)

    Chaudhary, Raghvendra Pratap; Pawar, Pranav Bhagwan; Vaibhav, Kumar; Saxena, Sumit; Shukla, Shobha

    2016-11-01

    The presence of azo dye molecules in effluents is a source of water pollution and an environmental hazard. Thus, it is very important to separate out such dye molecules. We have investigated the use of graphene oxide (GO) for the purification of dye-contaminated water. The adsorption efficiency of GO in the degradation of azo dye molecules and the interaction mechanism has been estimated using Ultra Violet-Visible absorption spectroscopy. The charge on the dye molecules along with steric hinderance due to their molecular structure is understood to be detrimental in the adsorption and removal of such dyes. Spectroscopic studies suggest that GO can be used as a potential candidate for efficient removal of cationic azo-dye molecules by adsorption.

  3. Development of an activated carbon-packed microbial bioelectrochemical system for azo dye degradation.

    PubMed

    Cardenas-Robles, Arely; Martinez, Eduardo; Rendon-Alcantar, Idelfonso; Frontana, Carlos; Gonzalez-Gutierrez, Linda

    2013-01-01

    A microbial bioelectrochemical reactor (BER) was employed for the degradation of azo dyes without the use of an external electron donor, using activated carbon (GAC) as a redox mediator. Contribution of pH values, open circuit potential (OCP), dye concentration and applied current were individually studied. A batch system and an upflow fixed bed bioreactor were built for analyzing the effect of the applied current on biodegradation of the azo dye Reactive Red 272. The presence of GAC (20% w/v) regulated both pH and OCP values in solution and led to a removal efficiency of 98%. Cyclic voltammetry results indicate a dependence of the electron transfer mechanism with the concentration of the azo compound. With these results, a continuous flow reactor operating with J=0.045 mA cm(-2), led to removal rates of 95% (± 3.5%) in a half-residence time of 1 hour.

  4. Excellent capability in degrading azo dyes by MgZn-based metallic glass powders.

    PubMed

    Wang, Jun-Qiang; Liu, Yan-Hui; Chen, Ming-Wei; Louzguine-Luzgin, Dmitri V; Inoue, Akihisa; Perepezko, John H

    2012-01-01

    The lack of new functional applications for metallic glasses hampers further development of these fascinating materials. In this letter, we report for the first time that the MgZn-based metallic glass powders have excellent functional ability in degrading azo dyes which are typical organic water pollutants. Their azo dye degradation efficiency is about 1000 times higher than that of commercial crystalline Fe powders, and 20 times higher than the Mg-Zn alloy crystalline counterparts. The high Zn content in the amorphous Mg-based alloy enables a greater corrosion resistance in water and higher reaction efficiency with azo dye compared to crystalline Mg. Even under complex environmental conditions, the MgZn-based metallic glass powders retain high reaction efficiency. Our work opens up a new opportunity for functional applications of metallic glasses.

  5. Ozonation of azo dyes (Orange II and Acid Red 27) in saline media.

    PubMed

    Silva, Alessandra C; Pic, Jean Stephane; Sant'Anna, Geraldo L; Dezotti, Marcia

    2009-09-30

    Ozonation of two azo dyes was investigated in a monitored bench scale bubble column reactor (8.5-L), varying liquid media salt content (0, 1, 40 and 100 g L(-1), NaCl). In experiments with Orange II pH was varied (5, 7.5 and 9) but ozonation of Acid Red 27 was performed at pH 7.5. Ozone self-decomposition rate-constant increased with salt concentration. Color removal was very effective and fast achieved under all experimental conditions. For the two azo dyes tested, more than 98% of color intensity was removed in 30-min ozonation assays. However, only partial mineralization of azo dyes (45%-Orange II; 20%-Acid Red 27) was attained in such experiments. The degree of mineralization (TOC removal) was negatively affected by salt concentration. Biodegradation assays conducted by respirometry revealed the inhibitory effect of dye degradation products formed during ozonation.

  6. Phosphoric acid loaded azo (-N═N-) based covalent organic framework for proton conduction.

    PubMed

    Chandra, Suman; Kundu, Tanay; Kandambeth, Sharath; Babarao, Ravichandar; Marathe, Yogesh; Kunjir, Shrikant M; Banerjee, Rahul

    2014-05-07

    Two new chemically stable functional crystalline covalent organic frameworkds (COFs) (Tp-Azo and Tp-Stb) were synthesized using the Schiff base reaction between triformylphloroglucinol (Tp) and 4,4'-azodianiline (Azo) or 4,4'-diaminostilbene (Stb), respectively. Both COFs show the expected keto-enamine form, and high stability toward boiling water, strong acidic, and basic media. H3PO4 doping in Tp-Azo leads to immobilization of the acid within the porous framework, which facilitates proton conduction in both the hydrous (σ = 9.9 × 10(-4) S cm(-1)) and anhydrous state (σ = 6.7 × 10(-5) S cm(-1)). This report constitutes the first emergence of COFs as proton conducting materials.

  7. Rapid decolorization of azo dyes in aqueous solution by an ultrasound-assisted electrocatalytic oxidation process.

    PubMed

    Ai, Zhihui; Li, Jinpo; Zhang, Lizhi; Lee, Shuncheng

    2010-02-01

    In this study, we developed a novel ultrasound-assisted electrocatalytic oxidation (US-EO) process to decolorize azo dyes in aqueous solution. Rhodamine B was decolorized completely within several minutes in this developed US-EO system. Oxidation parameters such as applied potentials, power of the ultrasound, initial pH of the solution, and initial concentration of RhB were systematically studied and optimized. An obvious synergistic effect was found in decolorization of RhB by the US-EO process when comparing with either ultrasound (US) process or electrocatalytic oxidation (EO) one. Additionally, the decolorization of other azo dyes, such as methylene blue, reactive brilliant red X-3B, and methyl orange, were also effective in the US-EO system. The results indicated that US-EO system was effective for the decolorization of azo dyes, suggesting its great potential in dyeing wastewater treatment.

  8. Photoresponse and trap characteristics of transparent AZO-gated AlGaN/GaN HEMT

    NASA Astrophysics Data System (ADS)

    Wang, Chong; Zhao, Meng-Di; He, Yun-Long; Zheng, Xue-Feng; Zhang, Kun; Wei, Xiao-Xiao; Mao, Wei; Ma, Xiao-Hua; Zhang, Jin-Cheng; Hao, Yue

    2016-10-01

    AZO-gated and Ni/Au-gated AlGaN/GaN HEMTs are fabricated successfully, and an excellent transparency of AZO-gated electrode is achieved. After a negative gate bias stress acts on two kinds of the devices, their photoresponse characteristics are investigated by using laser sources with different wavelengths. The effect of photoresponse on AZO-gated electrode device is more obvious than on Ni/Au-gated electrodes device. The electrons are trapped in the AlGaN barrier of AZO-gated HEMT after it has experienced negative gate bias stress, and then the electrons can be excited effectively after it has been illuminated by the light with certain wavelengths. Furthermore, the trap state density D T and the time constant τ T of the AZO-gated Schottky contact are extracted by fitting the measured parallel conductance in a frequency range from 10 kHz to 10 MHz. The constants of the trap range from about 0.35 μs to 20.35 μs, and the trap state density increased from 1.93 × 1013 eV-1·cm-2 at an energy of 0.33 eV to 3.07 × 1011 eV-1·cm-2 at an energy of 0.40 eV. Moreover, the capacitance and conductance measurements are used to characterize the trapping effects under different illumination conditions in AZO-gated HEMTs. Reduced deep trap states' density is confirmed under the illumination of short wavelength light. Project supported by the National Natural Science Foundation of China (Grant Nos. 61574110, 61574112, and 61106106).

  9. Iridium(III) Mediated Reductive Transformation of Closed-Shell Azo-Oxime to Open-Shell Azo-Imine Radical Anion: Molecular and Electronic Structure, Electron Transfer, and Optoelectronic Properties.

    PubMed

    Pramanik, Shuvam; Roy, Sima; Ghorui, Tapas; Ganguly, Sanjib; Pramanik, Kausikisankar

    2016-02-15

    The hydrogen bonded bis azo-oximato [IrCl2(L(NOH))(L(NO))] 2 and its deprotonated form (Et3NH)[IrCl2(L(NO))2] (Et3NH)(+)3(-) have been isolated in the crystalline state by a facile synthetic method. The azo-oxime frameworks in 3(-) have been conveniently transformed to the azo-imine by reduction with NaBH4 or ascorbic acid. Notably, the coordinated azo-imines accept an extra electron thereby furnishing the azo-imine radical anion complex 4. The underlying reductive transformation can be best described by proton-coupled electron transfer (PCET) process. Both the coordinated ligands (azo-oxime) in 3(-) are typically closed-shell monoanion (L(NO-)), but their reduced form (azo-imine) can behave as open-shell monoanion (L(NH•-)) owing to the presence of highly stabilized virtual orbitals. Remarkable enhancement of the π-acidity in azo-imine relative to the precursor azo-oxime has also been reflected from the electrochemical study. The irido complexes display rich optoelectronic properties, and the origin of the transitions has been scrutinized by the TD-DFT method. The molecular geometries of the complexes 2 and 3(-) reveal that the syn orientation of the azo-oximes frameworks is favored because of strong noncovalent H-bonding and π-π stacking interactions. In the course of the reduction of 3(-), the sterically encumbered disposition of the azo-oximes is converted to the relaxed anti form in the transformed azo-imines. Diffraction study reveals the electronic structure of 4 as [Ir(III)Cl2{(L(NH))2(•-)}]. The superior stabilization of the unpaired spin on the ligand array rather than metal has also been substantiated from EPR and DFT studies. Theoretical analysis reveals that the odd electron delocalizes primarily over both the azo-imine moieties ([IrCl2(L(NH•-))(L(NH))] ↔ ([IrCl2(L(NH))(L(NH•-))]) with no apparent contribution from metal, and this type of ligand-centered mixed valency (LCMV) can be best expressed as Robin-Day class III (fully delocalized

  10. Synthesis and anion recognition studies of novel bis (4-hydroxycoumarin) methane azo dyes

    NASA Astrophysics Data System (ADS)

    Panitsiri, Amorn; Tongkhan, Sukanya; Radchatawedchakoon, Widchaya; Sakee, Uthai

    2016-03-01

    Four new bis (4-hydroxycoumarin) methane azo dyes were synthesized by the condensation of 4-hydroxycoumarin with four different azo salicylaldehydes and their structures were characterized by FT-IR, 1H NMR, 13C NMR, HRMS. Anion binding ability in dimethyl sulfoxide (DMSO) solutions with tetrabutylammonium (TBA) salts (F-, Cl-, Br-, I-, AcO- and H2PO4-) was investigated by the naked eye, as well as UV-visible spectroscopy. The sensor shows selective recognition towards fluoride and acetate. The binding affinity of the sensors with fluoride and acetate was calculated using UV-visible spectroscopic technique.

  11. Stretched exponential kinetics for photoinduced birefringence in azo dye doped PVA films

    NASA Astrophysics Data System (ADS)

    Yang, Hye Ri; Kim, Eun Ju; Lee, Sang Jo; Kim, Gun Yeup; Kwak, Chong Hoon

    2009-05-01

    We fabricated azo dye (methylorange) doped poly vinyl alcohol (MO/PVA) thin films and measured the photoinduced birefringence (PIB) kinetics for several pump beam intensities and for various MO concentrations by using the pump-probe technique. A novel approach to explain the transient behaviors of the photoinduced anisotropy is presented by employing an empirical stretched exponential time response in the course of the trans-cis-trans photoisomerization of azo molecules and is compared with the experimental data, showing excellent agreement. The stretched exponent is estimated to be β = 0.34 ± 0.04, revealing amorphous nature of the MO/PVA system.

  12. Photoreversible optical data recording in films of amorphous azo dye-containing polymers

    SciTech Connect

    Simonov, A N; Uraev, D V; Shibaev, Valerii P; Kostromin, S G

    2002-02-28

    The photoreversible properties of films of amorphous azo-containing polymers (AAPs) are studied theoretically and experimentally. The control of the sign of a photoinduced addition {Delta}n{sup ind} to the refractive index of the polymer by changing polarisation of the incident light is demonstrated. A theoretical model of photoinduced processes in AAP films is proposed, which takes into account the orientation diffusion of trans-isomers of azo dyes, and simplified analytic approaches describing the photoorientation dynamics in AAPs are considered. The theoretical results are in good agreement with our experimental data. (laser applications and other topics in quantum electronics)

  13. Spontaneous photoinduced patterning of azo-dye polymer films: the facts

    SciTech Connect

    Hubert, Christophe

    2007-08-15

    We describe the spontaneous photoinduced patterning of azo-dye polymer films. We have observed that the illumination of an azo-dye polymer film by a uniform single laser beam with normal incidence leads to a self-structurization process that results in the formation of well-ordered submicrometer-sized structures whose organization depends on the light polarization direction. A modulation depth as high as 100 nm can be achieved. The influence of several experimental parameters on the structure formation is studied. Results are discussed and confronted to different models and phenomena already investigated in the literature. A physical origin to this peculiar photopatterning process is proposed.

  14. Third-order nonlinear optical properties of organic azo dyes by using strength of nonlinearity parameter and Z-scan technique

    NASA Astrophysics Data System (ADS)

    Motiei, H.; Jafari, A.; Naderali, R.

    2017-02-01

    In this paper, two chemically synthesized organic azo dyes, 2-(2,5-Dichloro-phenyazo)-5,5-dimethyl-cyclohexane-1,3-dione (azo dye (i)) and 5,5-Dimethyl-2-tolylazo-cyclohexane-1,3-dione (azo dye (ii)), have been studied from optical Kerr nonlinearity point of view. These materials were characterized by Ultraviolet-visible spectroscopy. Experiments were performed using a continous wave diode-pumped laser at 532 nm wavelength in three intensities of the laser beam. Nonlinear absorption (β), refractive index (n2) and third-order susceptibility (χ (3)) of dyes, were calculated. Nonlinear absorption coefficient of dyes have been calculated from two methods; 1) using theoretical fits and experimental data in the Z-scan technique, 2) using the strength of nonlinearity curves. The values of β obtained from both of the methods were approximately the same. The results demonstrated that azo dye (ii) displays better nonlinearity and has a lower two-photon absorption threshold than azo dye (i). Calculated parameter related to strength of nonlinearity for azo dye (ii) was higher than azo dye (i), It may be due to presence of methyl in azo dye (ii) instead of chlorine in azo dye (i). Furthermore, The measured values of third order susceptibility of azo dyes were from the order of 10-9 esu . These azo dyes can be suitable candidate for optical switching devices.

  15. Low-Temperature PLD-Growth of Ultrathin ZnO Nanowires by Using Zn x Al1- x O and Zn x Ga1- x O Seed Layers

    NASA Astrophysics Data System (ADS)

    Shkurmanov, Alexander; Sturm, Chris; Franke, Helena; Lenzner, Jörg; Grundmann, Marius

    2017-02-01

    ZnO nanowires (NWs) are used as building blocks for a wide range of different devices, e.g. light emitters, resonators, and sensors. Integration of the NWs into such structures requires a high level of NWs' diameter control. Here, we present that the doping concentration of Zn x Al1- x O and Zn x Ga1- x O seed layers has a strong impact on the NW growth and allows to tune the diameter of the NWs by two orders of magnitude down to less than 7 nm. These ultrathin NWs exhibit a well-oriented vertical growth and thus are promising for the investigation of quantum effects. The doping of the ZnO seed layers has also an impact on the deposition temperature which can be reduced down to T≈400∘C. This temperature is much smaller than those typically used for the fabrication of NWs by pulsed laser deposition. A comparison of the NWs indicates a stronger impact of the Ga doping on the NW growth than for the Al doping which we attribute to an impact of the size of the dopants. The optical properties of the NWs were investigated by cathodoluminescence spectroscopy which revealed a high crystalline quality. For the thin nanowires, the emission characteristic is mainly determined by the properties of the surface near region.

  16. Low-Temperature PLD-Growth of Ultrathin ZnO Nanowires by Using Zn x Al1-x O and Zn x Ga1-x O Seed Layers.

    PubMed

    Shkurmanov, Alexander; Sturm, Chris; Franke, Helena; Lenzner, Jörg; Grundmann, Marius

    2017-12-01

    ZnO nanowires (NWs) are used as building blocks for a wide range of different devices, e.g. light emitters, resonators, and sensors. Integration of the NWs into such structures requires a high level of NWs' diameter control. Here, we present that the doping concentration of Zn x Al1-x O and Zn x Ga1-x O seed layers has a strong impact on the NW growth and allows to tune the diameter of the NWs by two orders of magnitude down to less than 7 nm. These ultrathin NWs exhibit a well-oriented vertical growth and thus are promising for the investigation of quantum effects. The doping of the ZnO seed layers has also an impact on the deposition temperature which can be reduced down to T≈400(∘)C. This temperature is much smaller than those typically used for the fabrication of NWs by pulsed laser deposition. A comparison of the NWs indicates a stronger impact of the Ga doping on the NW growth than for the Al doping which we attribute to an impact of the size of the dopants. The optical properties of the NWs were investigated by cathodoluminescence spectroscopy which revealed a high crystalline quality. For the thin nanowires, the emission characteristic is mainly determined by the properties of the surface near region.

  17. Photocatalytic Degradation of Azo Dyes using Doped Titania Fibers

    NASA Astrophysics Data System (ADS)

    Shanmugasundaram, Prasad

    Photo-catalytic degradation using semiconductor particle as dispersion in aqueous medium has been gaining increased attention over the past several years. Their versatility in application makes them unique along with their easy processing techniques and low cost. Titania semiconductor is one of the most important members of this family. It has been widely used for various applications ranging from environmental to bio-medical. Titanium dioxide has gained importance as an effective photo-catalyst because of its advantages over other semiconductor oxides which include high photo-stability, inexpensive, reusable property, chemical and biological inertness, high reactivity, non-toxicity, corrosion resistance, operation at ambient temperatures and its ability to treat trace level pollutants. Its use as a photocatalyst is primarily because of its band gap of 3.0-3.3 eV which can be effectively activated under ultraviolet radiation (wavelength lambda < 400 nm), which leads to electron jump from valence to conduction band. This project aims at developing electrospun titania fibers doped with copper in order to study and demonstrate photocatalytic activity in the visible light spectrum, resulting in quick formation of holes which are ready to react with water to form -OH radicals. A comparative study of pure titania and copper doped titania for degradation of azo dyes were carried out. SEM, EDAX, XRD were carried out to thoroughly understand the structure of the fibers. The photocatalytic activity measurements for different dyes were noted using Uv-Vis method. The fibers when fully developed will be disposable photocatalytic materials for degrading dyes, Organic pollutants and for bio-medical applications when exposed to visible light.

  18. ZnO based light emitting diodes growth and fabrication

    NASA Astrophysics Data System (ADS)

    Pan, M.; Rondon, R.; Cloud, J.; Rengarajan, V.; Nemeth, W.; Valencia, A.; Gomez, J.; Spencer, N.; Nause, J.

    2006-02-01

    ZnO and N-doped ZnO thin films were grown by MOCVD on sapphire and ZnO substrates. Diethyl zinc and O II were used as sources for Zn and O, respectively. A specially designed plasma system was employed to produce atomic N dopant for in-situ doping. Proper disk rotation speeds were found for ZnO growth on different size wafers. High crystal quality N-doped ZnO films were grown based on optimized growth conditions. Wet chemical etch of ZnO was investigated by using NH 4Cl, and etch activation energy was calculated to be 463meV. Ohmic contact on N-doped ZnO film was achieved by using Ni/Au/Al multiple layers. ZnO based p-n junction has demonstrated rectification. Electroluminescence at about 384nm was obtained from ZnO based LED.

  19. Enhanced azo dye removal through anode biofilm acclimation to toxicity in single-chamber biocatalyzed electrolysis system.

    PubMed

    Wang, You-Zhao; Wang, Ai-Jie; Liu, Wen-Zong; Sun, Qian

    2013-08-01

    Azo dye is widely used in printing and dyeing process as one of refractory wastewaters for its high chroma, stable chemical property and toxicity for aquatic organism. Biocatalyzed electrolysis system (BES) is a new developed technology to degrade organic waste in bioanode and recover recalcitrant contaminants in cathode with effective decoloration. The ion exchange membrane (IEM) separate anode and cathode for biofilm formation protection. Azo removal efficiency was up to 60.8%, but decreased to 20.5% when IEM was removed. However, expensive ion exchange membrane (IEM) not suitable for further practical application, bioelectrochemical activity of bioanode is sensitive to the toxicity of azo dye. A gradient increase of azo dye concentration was used to acclimate anode biofilm to pollutant toxicity. The azo removal efficiency can be enhanced to 73.3% in 10h reaction period after acclimation. The highest removal efficiency reached 83.7% and removal rates were increased to 8.37 from 3.04 g/h/L of dual-chamber. That indicated the feasibility for azo dye removal by single-chamber BES. The IEM cancellation not only decreased the internal resistance, but increased the current density and azo dye removal.

  20. Investigation of the azo-hydrazone tautomeric equilibrium in an azo dye involving the naphthalene moiety by UV-vis spectroscopy and quantum chemistry

    NASA Astrophysics Data System (ADS)

    Ünal, Arslan; Eren, Bilge; Eren, Erdal

    2013-10-01

    Photophysical properties of the azo-hydrazone tautomerism of Eriochrome Blue Black B (1-(1-hydroxy-2-naphthylazo)-2-naphthol-4-sulphonic acid) in DMF, MeCN and water were investigated using UV-visible spectroscopy and quantum chemical calculations. The optimized molecular structure parameters, relative energies, mole fractions, electronic absorption spectra and HOMO-LUMO energies for possible stable tautomeric forms of EBB were theoretically calculated by using hybrid density functional theory, (B3LYP) methods with 6-31G(d) basis set level and polarizable continuum model (PCM) for solvation effect. The effects of varying pH-, dye concentration-, solvent-, temperature-, and time-dependences on the UV-vis spectra of Eriochrome Blue Black B were also investigated experimentally. The calculations showed that the dye exhibited acid-base, azo-hydrazone and aggregate equilibria in DMF solution, while the most probably preferred form in MeCN solution was azo form. Thermodynamic parameters of dimerization reaction in DMF solution proved that entropy was the driving force of this reaction.

  1. Thickness-dependent blue shift in the excitonic peak of conformally grown ZnO:Al on ion-beam fabricated self-organized Si ripples

    SciTech Connect

    Basu, T.; Kumar, M.; Som, T.; Nandy, S.; Satpati, B.; Saini, C. P.; Kanjilal, A.

    2015-09-14

    Al-doped ZnO (AZO) thin films of thicknesses 5,10, 15, 20, and 30 nm were deposited on 500 eV argon ion-beam fabricated nanoscale self-organized rippled-Si substrates at room temperature and are compared with similar films deposited on pristine-Si substrates (without ripples). It is observed that morphology of self-organized AZO films is driven by the underlying substrate morphology. For instance, for pristine-Si substrates, a granular morphology evolves for all AZO films. On the other hand, for rippled-Si substrates, morphologies having chain-like arrangement (anisotropic in nature) are observed up to a thickness of 20 nm, while a granular morphology evolves (isotropic in nature) for 30 nm-thick film. Photoluminescence studies reveal that excitonic peaks corresponding to 5–15 nm-thick AZO films, grown on rippled-Si templates, show a blue shift of 8 nm and 3 nm, respectively, whereas the peak shift is negligible for 20-nm thick film (with respect to their pristine counter parts). The observed blue shifts are substantiated by diffuse reflectance study and attributed to quantum confinement effect, associated with the size of the AZO grains and their spatial arrangements driven by the anisotropic morphology of underlying rippled-Si templates. The present findings will be useful for making tunable AZO-based light-emitting devices.

  2. Thickness-dependent blue shift in the excitonic peak of conformally grown ZnO:Al on ion-beam fabricated self-organized Si ripples

    NASA Astrophysics Data System (ADS)

    Basu, T.; Kumar, M.; Nandy, S.; Satpati, B.; Saini, C. P.; Kanjilal, A.; Som, T.

    2015-09-01

    Al-doped ZnO (AZO) thin films of thicknesses 5,10, 15, 20, and 30 nm were deposited on 500 eV argon ion-beam fabricated nanoscale self-organized rippled-Si substrates at room temperature and are compared with similar films deposited on pristine-Si substrates (without ripples). It is observed that morphology of self-organized AZO films is driven by the underlying substrate morphology. For instance, for pristine-Si substrates, a granular morphology evolves for all AZO films. On the other hand, for rippled-Si substrates, morphologies having chain-like arrangement (anisotropic in nature) are observed up to a thickness of 20 nm, while a granular morphology evolves (isotropic in nature) for 30 nm-thick film. Photoluminescence studies reveal that excitonic peaks corresponding to 5-15 nm-thick AZO films, grown on rippled-Si templates, show a blue shift of 8 nm and 3 nm, respectively, whereas the peak shift is negligible for 20-nm thick film (with respect to their pristine counter parts). The observed blue shifts are substantiated by diffuse reflectance study and attributed to quantum confinement effect, associated with the size of the AZO grains and their spatial arrangements driven by the anisotropic morphology of underlying rippled-Si templates. The present findings will be useful for making tunable AZO-based light-emitting devices.

  3. Use of anodes with tunable work function for improving organic light-emitting diode performance

    NASA Astrophysics Data System (ADS)

    Li, Meng-Chi; Lo, Yen-Ming; Liao, Shih-Fang; Chen, Hsi-Chao; Chang, Hsin-Hua; Lee, Cheng-Chung; Kuo, Chien-Cheng

    2015-12-01

    The effect of reactive gases-oxygen and hydrogen-on the tunable work function of Al-doped ZnO (AZO) films was studied. An increase in the work function with an increase in the oxygen flow rate was mainly interpreted as reflecting a decrease in the carrier concentration, which was attributed to the filling of oxygen vacancies. However, a decrease in the carrier concentration would result in the resistivity increasing sharply. This article presents a new concept for improving the performance of organic light-emitting diodes (OLEDs) through easy and effective hole injection from a multilayer AZO anode to the organic layer. A bilayer AZO film prepared using a tunable work function technique was used to modify the surface of AZO anodes and to ensure that the anodes had low resistivity. The AZO anode stacked with high-work-function AZO films, similar to hole transport buffer layers, had a low turn-on voltage of 2.89 V, and its luminance efficiency and power efficiency were 5.01% and 6.1% greater than those of tin-doped indium oxide anodes used in OLEDs.

  4. Continuous Tuning of Phase Transition Temperature in VO2 Thin Films on c-Cut Sapphire Substrates via Strain Variation.

    PubMed

    Jian, Jie; Wang, Xuejing; Li, Leigang; Fan, Meng; Zhang, Wenrui; Huang, Jijie; Qi, Zhimin; Wang, Haiyan

    2017-02-15

    Vanadium dioxide (VO2) thin films with controlled thicknesses are deposited on c-cut sapphire substrates with Al-doped ZnO (AZO) buffer layers by pulsed laser deposition. The surface roughness of AZO buffer layers is varied by controlling oxygen pressure during growth. The strain in the VO2 lattice is found to be dependent on the VO2 thickness and the VO2/AZO interface roughness. The semiconductor-to-metal transition (SMT) properties of VO2 thin films are characterized and the transition temperature (Tc) is successfully tuned by the VO2 thickness as well as the VO2/AZO interface roughness. It shows that the Tc of VO2 decreases with the decrease of film thickness or VO2/AZO interface roughness. Other SMT properties of the VO2 films are maintained during the Tc tuning. The results suggest that the strain tuning induced by AZO buffer provides an effective approach for tuning Tc of VO2 continuously.

  5. Optical properties of ZnO nanostructures.

    PubMed

    Djurisić, Aleksandra B; Leung, Yu Hang

    2006-08-01

    We present a review of current research on the optical properties of ZnO nanostructures. We provide a brief introduction to different fabrication methods for various ZnO nanostructures and some general guidelines on how fabrication parameters (temperature, vapor-phase versus solution-phase deposition, etc.) affect their properties. A detailed discussion of photoluminescence, both in the UV region and in the visible spectral range, is provided. In addition, different gain (excitonic versus electron hole plasma) and feedback (random lasing versus individual nanostructures functioning as Fabry-Perot resonators) mechanisms for achieving stimulated emission are described. The factors affecting the achievement of stimulated emission are discussed, and the results of time-resolved studies of stimulated emission are summarized. Then, results of nonlinear optical studies, such as second-harmonic generation, are presented. Optical properties of doped ZnO nanostructures are also discussed, along with a concluding outlook for research into the optical properties of ZnO.

  6. Parallel Combinatorial Synthesis of Azo Dyes: A Combinatorial Experiment Suitable for Undergraduate Laboratories

    ERIC Educational Resources Information Center

    Gung, Benjamin W.; Taylor, Richard T.

    2004-01-01

    An experiment in the parallel synthesis of azo dyes that demonstrates the concepts of structure-activity relationships and chemical diversity with vivid colors is described. It is seen that this experiment is suitable for the second-semester organic chemistry laboratory and also for the one-semester organic laboratory.

  7. Decolorization of azo dyes by marine Shewanella strains under saline conditions.

    PubMed

    Liu, Guangfei; Zhou, Jiti; Meng, Xianming; Fu, Shiang Q; Wang, Jing; Jin, Ruofei; Lv, Hong

    2013-05-01

    Azo dye decolorization was studied with Shewanella strains under saline conditions. Growing cells of Shewanella algae and Shewanella marisflavi isolated from marine environments demonstrated better azo dye decolorization capacities than the other three strains from non-saline sources. Cell suspensions of S. algae and S. marisflavi could decolorize single or mixed azo dyes with different structures. Decolorization kinetics were described with Michaelis-Menton equation, which indicated better decolorization performance of S. algae over S. marisflavi. Lactate and formate were identified as efficient electron donors for amaranth decolorization by the two strains. S. algae and S. marisflavi could decolorize amaranth at up to 100 g L(-1) NaCl or Na2SO4. However, extremely low concentration of NaNO3 exerted strong inhibition on decolorization. Both strains could remove the color and COD of textile effluent during sequential anaerobic-aerobic incubation. Lower concentrations of NaCl (20-30 g L(-1)) stimulated the activities of azoreductase, laccase, and NADH-DCIP reductase. The decolorization intermediates were identified by high-performance liquid chromatography and Fourier transform infrared spectroscopy. Decolorization metabolites of amaranth were less toxic than original dye. These findings improved our knowledge of azo-dye-decolorizing Shewanella species and provided efficient candidates for the treatment of dye-polluted saline wastewaters.

  8. Development of a novel high-entropy alloy with eminent efficiency of degrading azo dye solutions

    NASA Astrophysics Data System (ADS)

    Lv, Z. Y.; Liu, X. J.; Jia, B.; Wang, H.; Wu, Y.; Lu, Z. P.

    2016-09-01

    In addition to its scientific importance, the degradation of azo dyes is of practical significance from the perspective of environmental protection. Although encouraging progress has been made on developing degradation approaches and materials, it is still challenging to fully resolve this long-standing problem. Herein, we report that high entropy alloys, which have been emerging as a new class of metallic materials in the last decade, have excellent performance in degradation of azo dyes. In particular, the newly developed AlCoCrTiZn high-entropy alloy synthesized by mechanical alloying exhibits a prominent efficiency in degradation of the azo dye (Direct Blue 6: DB6), as high as that of the best metallic glass reported so far. The newly developed AlCoCrTiZn HEA powder has low activation energy barrier, i.e., 30 kJ/mol, for the degrading reaction and thus make the occurrence of reaction easier as compared with other materials such as the glassy Fe-based powders. The excellent capability of our high-entropy alloys in degrading azo dye is attributed to their unique atomic structure with severe lattice distortion, chemical composition effect, residual stress and high specific surface area. Our findings have important implications in developing novel high-entropy alloys for functional applications as catalyst materials.

  9. 40 CFR 721.3063 - Substituted phenyl azo substituted phenyl esters (generic name).

    Code of Federal Regulations, 2010 CFR

    2010-07-01

    ... phenyl esters (generic name). 721.3063 Section 721.3063 Protection of Environment ENVIRONMENTAL... esters (generic name). (a) Chemical substance and significant new uses subject to reporting. (1) The chemical substances identified generically as substituted phenyl azo substituted phenyl esters (PMNs...

  10. 40 CFR 721.3063 - Substituted phenyl azo substituted phenyl esters (generic name).

    Code of Federal Regulations, 2011 CFR

    2011-07-01

    ... phenyl esters (generic name). 721.3063 Section 721.3063 Protection of Environment ENVIRONMENTAL... esters (generic name). (a) Chemical substance and significant new uses subject to reporting. (1) The chemical substances identified generically as substituted phenyl azo substituted phenyl esters (PMNs...

  11. 40 CFR 721.3063 - Substituted phenyl azo substituted phenyl esters (generic name).

    Code of Federal Regulations, 2012 CFR

    2012-07-01

    ... phenyl esters (generic name). 721.3063 Section 721.3063 Protection of Environment ENVIRONMENTAL... esters (generic name). (a) Chemical substance and significant new uses subject to reporting. (1) The chemical substances identified generically as substituted phenyl azo substituted phenyl esters (PMNs...

  12. 40 CFR 721.3063 - Substituted phenyl azo substituted phenyl esters (generic name).

    Code of Federal Regulations, 2013 CFR

    2013-07-01

    ... phenyl esters (generic name). 721.3063 Section 721.3063 Protection of Environment ENVIRONMENTAL... esters (generic name). (a) Chemical substance and significant new uses subject to reporting. (1) The chemical substances identified generically as substituted phenyl azo substituted phenyl esters (PMNs...

  13. Preparation of 1,1'-dinitro-3,3'-azo-1,2,4-triazole

    DOEpatents

    Lee, Kien-Yin

    1986-01-01

    A new high density composition of matter, 1,1'-dinitro-3,3'-azo-1,2,4-triazole, has been synthesized using inexpensive, commonly available compounds. This compound has been found to be an explosive, and its use as a propellant is anticipated.

  14. Development of a novel high-entropy alloy with eminent efficiency of degrading azo dye solutions.

    PubMed

    Lv, Z Y; Liu, X J; Jia, B; Wang, H; Wu, Y; Lu, Z P

    2016-09-28

    In addition to its scientific importance, the degradation of azo dyes is of practical significance from the perspective of environmental protection. Although encouraging progress has been made on developing degradation approaches and materials, it is still challenging to fully resolve this long-standing problem. Herein, we report that high entropy alloys, which have been emerging as a new class of metallic materials in the last decade, have excellent performance in degradation of azo dyes. In particular, the newly developed AlCoCrTiZn high-entropy alloy synthesized by mechanical alloying exhibits a prominent efficiency in degradation of the azo dye (Direct Blue 6: DB6), as high as that of the best metallic glass reported so far. The newly developed AlCoCrTiZn HEA powder has low activation energy barrier, i.e., 30 kJ/mol, for the degrading reaction and thus make the occurrence of reaction easier as compared with other materials such as the glassy Fe-based powders. The excellent capability of our high-entropy alloys in degrading azo dye is attributed to their unique atomic structure with severe lattice distortion, chemical composition effect, residual stress and high specific surface area. Our findings have important implications in developing novel high-entropy alloys for functional applications as catalyst materials.

  15. Transient gratings in thin films and bulk azo-dye-containing poly(methyl methacrylate) matrix

    NASA Astrophysics Data System (ADS)

    Luo, Duanbin; Lu, Wei; Wu, Shuizhu

    2005-02-01

    Using holographic recording technology, two kinds of transient diffraction gratings were demonstrated in azo-dye doped Poly(methyl methacrylate) (PMMA) films and bulk matrices respectively. In PMMA films containing azo-dye Disperse Red 13 (DR13), the refractive index gratings came from the reorientation of azo-dye molecules in different areas with different polarization distribution of recording beams. The characteristics of the transient gratings in films samples which were recorded by two mutually parallel polarization beams (PP and SS) as well as orthogonal linear polarization beams (PS and +/-45°) from an Ar ion laser (514nm) were investigated by monitoring the first order diffraction intensity of the readout He-Ne laser beam (632.8nm). With the interaction of bi-photonic lights at 514nm and 632.8nm, the transient gratings in azo-dye DR13 doped PMMA bulk matrices was a kind of population gratings of Trans and Cis isomers, which was attributed to the weak absorption of Cis isomers at 632.8nm and the positive dichroism of Trans isomers at 514nm. Furthermore, the all-optical switching behavior of the two kinds of transient holographic gratings were observed repeatedly by turning on and off the writing beams, and a response time at the magnitude of ten milliseconds order could be obtained.

  16. Development of a novel high-entropy alloy with eminent efficiency of degrading azo dye solutions

    PubMed Central

    Lv, Z. Y.; Liu, X. J.; Jia, B.; Wang, H.; Wu, Y.; Lu, Z. P.

    2016-01-01

    In addition to its scientific importance, the degradation of azo dyes is of practical significance from the perspective of environmental protection. Although encouraging progress has been made on developing degradation approaches and materials, it is still challenging to fully resolve this long-standing problem. Herein, we report that high entropy alloys, which have been emerging as a new class of metallic materials in the last decade, have excellent performance in degradation of azo dyes. In particular, the newly developed AlCoCrTiZn high-entropy alloy synthesized by mechanical alloying exhibits a prominent efficiency in degradation of the azo dye (Direct Blue 6: DB6), as high as that of the best metallic glass reported so far. The newly developed AlCoCrTiZn HEA powder has low activation energy barrier, i.e., 30 kJ/mol, for the degrading reaction and thus make the occurrence of reaction easier as compared with other materials such as the glassy Fe-based powders. The excellent capability of our high-entropy alloys in degrading azo dye is attributed to their unique atomic structure with severe lattice distortion, chemical composition effect, residual stress and high specific surface area. Our findings have important implications in developing novel high-entropy alloys for functional applications as catalyst materials. PMID:27677462

  17. DEVELOPING AZO AND FORMAZAN DYES BASED ON ENVIRONMENTAL CONSIDERATIONS: SALMONELLA MUTAGENICITY

    EPA Science Inventory

    Abstract
    In previous papers, the synthesis and chemical properties of iron-complexed azo and formazan dyes were reported. In this regard, it was shown that in certain cases iron could be substituted for the traditionally used metals, chromium and cobalt, without having an adve...

  18. 40 CFR 721.2122 - Substituted phenyl azo substituted sulfo carbopolycycle.

    Code of Federal Regulations, 2012 CFR

    2012-07-01

    ... AGENCY (CONTINUED) TOXIC SUBSTANCES CONTROL ACT SIGNIFICANT NEW USES OF CHEMICAL SUBSTANCES Significant New Uses for Specific Chemical Substances § 721.2122 Substituted phenyl azo substituted sulfo carbopolycycle. (a) Chemical substance and significant new uses subject to reporting. (1) The chemical...

  19. 40 CFR 721.2122 - Substituted phenyl azo substituted sulfo carbopolycycle.

    Code of Federal Regulations, 2011 CFR

    2011-07-01

    ... AGENCY (CONTINUED) TOXIC SUBSTANCES CONTROL ACT SIGNIFICANT NEW USES OF CHEMICAL SUBSTANCES Significant New Uses for Specific Chemical Substances § 721.2122 Substituted phenyl azo substituted sulfo carbopolycycle. (a) Chemical substance and significant new uses subject to reporting. (1) The chemical...

  20. 40 CFR 721.2122 - Substituted phenyl azo substituted sulfo carbopolycycle.

    Code of Federal Regulations, 2014 CFR

    2014-07-01

    ... AGENCY (CONTINUED) TOXIC SUBSTANCES CONTROL ACT SIGNIFICANT NEW USES OF CHEMICAL SUBSTANCES Significant New Uses for Specific Chemical Substances § 721.2122 Substituted phenyl azo substituted sulfo carbopolycycle. (a) Chemical substance and significant new uses subject to reporting. (1) The chemical...

  1. 40 CFR 721.3063 - Substituted phenyl azo substituted phenyl esters (generic name).

    Code of Federal Regulations, 2014 CFR

    2014-07-01

    ... PROTECTION AGENCY (CONTINUED) TOXIC SUBSTANCES CONTROL ACT SIGNIFICANT NEW USES OF CHEMICAL SUBSTANCES Significant New Uses for Specific Chemical Substances § 721.3063 Substituted phenyl azo substituted phenyl esters (generic name). Link to an amendment published at 79 FR 34637, June 18, 2014. (a)...

  2. Formation of ordered mesoporous films from in situ structure inversion of azo polymer colloidal arrays.

    PubMed

    Li, Yaobang; Tong, Xiaolan; He, Yaning; Wang, Xiaogong

    2006-02-22

    This work shows that mesoporous polymeric films with spherical and elliptical pores can be obtained by in situ structure inversion of the azo polymer colloid arrays through selective interaction with solvent. The epoxy-based azo polymer contained both the pseudo-stilbene-type azo chromophores and the hydrophilic carboxyl groups. The colloidal spheres of the azo polymer were prepared by gradual hydrophobic aggregation of the polymeric chains in THF-H2O media, induced by a steady increase in the water content. Ordered 2D arrays of the hexagonally close-packed colloidal spheres were obtained by the vertical deposition method. After the solvent (THF) annealing, the ordered 2D arrays were directly transformed to mesoporous films through the sphere-pore inversion. Under the same condition, the 2D arrays composed of the ellipsoidal colloids, which were obtained by the irradiation of a polarized Ar+ laser beam on the colloidal sphere arrays, could be transformed to films with ordered elliptical pores. To our knowledge, this is the first example to demonstrate that mesoporous structures can be directly formed from the colloidal arrays of a homopolymer through structure inversion. This observation can shed new light on the nature of self-assembly processes and provide a feasible approach to fabricate mesoporous structures without the infiltration-removal step. By exploring the photoresponsive properties of the materials, mesoporous film with special pore structure and properties can be expected.

  3. Photoinduced grating formation in a polymer containing azo-carbazole dyes.

    PubMed

    Kawabe, Yutaka; Fukuzawa, Kodai; Uemura, Takuya; Matsuura, Katsufumi; Yoshikawa, Toshio; Nishide, Jun-ichi; Sasabe, Hiroyuki

    2012-09-20

    Although some azo-carbazole derivatives attached on or doped into inert polymers are known to show photorefractive effect without external electric field, the origin of their asymmetric energy transfer in two-beam coupling experiments were unknown. We made the two-beam coupling experiment followed by sample translation and one-beam diffraction at 633 nm for thick films composed of 3-[(4-nitrophenyl)]azo-9H-carbazole-9-ethanol (NACzEtOH) and poly(methylmethacrylate), finding that photoinduced gratings grew in several minutes accompanied with phase displacement of the gratings, but the phase shift was not always synchronized with the refractive index modulation. We reformulated the Kogelnik's coupled-wave theory with strict energy conservation law for analysis. Comparison of the grating growth and erasure at 532 nm to Disperse Red 1 (DR1), the most well-known azo dye showed that the photoisomerization was dominant at this wavelength and that the azo-carbazole dyes were faster in response time and more resistive to erasure than DR1.

  4. Zero-valent iron pretreatment for enhancing the biodegradability of Azo dyes.

    PubMed

    Perey, Jennie R; Chiu, Pei C; Huang, Chin-Pao; Cha, Daniel K

    2002-01-01

    Azo dyes are a group of chemicals that are largely resistant to aerobic biodegradation and persist in wastewater treatment processes. This study proposed that zero-valent iron can be used to reduce the azo bond, cleaving the dye molecule into products that are more amenable to mineralization by bacteria in biological treatment processes such as activated sludge. Batch anaerobic reduction experiments were performed using two azo dyes, orange G and orange II, to determine reaction kinetics and to identify reduction products. Iron-treated dye solutions were subjected to batch biodegradation tests and respirometric analyses to screen for enhanced biodegradability over parent dyes. Results indicate that treatment of orange G and orange II with scrap iron produces aniline and sulfanilic acid as significant products that are degraded by an acclimated culture within 24 hours. Respirometric data illustrated that iron-treated dye solutions exert a significantly higher biochemical oxygen demand than the solutions containing orange G and orange II, demonstrating that recalcitrant azo dyes can be aerobically biodegraded after iron pretreatment.

  5. Spectrophotometric determination of persulfate by oxidative decolorization of azo dyes for wastewater treatment.

    PubMed

    Ding, Yaobin; Zhu, Lihua; Yan, Jingchun; Xiang, Qingqing; Tang, Heqing

    2011-11-01

    Persulfate can efficiently decolorize azo dyes through oxidizing these compounds, which enabled us to develop a method of rapid spectrophotometric determination of persulfate for monitoring the wastewater treatment on the basis of the oxidation decolorization of azo dyes. Four azo dyes with different molecular structures were investigated as probes, and the influences of operation parameters including reaction time, solution pH, initial dye concentration, and initial concentration of activator Fe(2+) were checked on the determination of persulfate. Under optimum conditions, the decolorization degree of the dyes responded linearly with persulfate concentration for all the four azo dyes, and the linear range and detection limit were found to be 2.0-150 μmol L(-1) and 0.62 μmol L(-1) for rhodamine B, 2.0-100 μmol L(-1) and 0.42 μmol L(-1) for methylene blue, 4.0-150 μmol L(-1) and 0.50 μmol L(-1) for methyl violet, and 20-150 μmol L(-1) and 8.1 μmol L(-1) for orange II. A persulfate treatment of a spiked wastewater sample was satisfactorily monitored with the new method.

  6. A GSH-activatable ruthenium(ii)-azo photosensitizer for two-photon photodynamic therapy.

    PubMed

    Zeng, Leli; Kuang, Shi; Li, Guanying; Jin, Chengzhi; Ji, Liangnian; Chao, Hui

    2017-02-07

    A glutathione (GSH)-activatable ruthenium(ii)-azo photosensitizer was prepared. The complex had low toxicity towards cells under dark conditions. It exhibited excellent phototoxicity under two-photon excitation (810 nm) and thus was developed as a two-photon photodynamic anticancer agent for cancer therapy.

  7. Optical orientation of azo dye molecules in a thin solid film upon nonlinear excitation by femtosecond laser pulses

    SciTech Connect

    Yongseok, Jung; Kozenkov, V M; Magnitskiy, Sergey A; Nagorskiy, Nikolay M

    2006-11-30

    The orientation of molecules in an amorphous pure azo dye film upon nonlinear excitation is detected for the first time. The simultaneous increase and decrease in the film transmission by a factor of 2.5 for orthogonal polarisations of probe radiation indicated the appearance of orientation order in the film caused by the reorientation of azo dye molecules. Due to a high photostability of the AD-1 azo dye demonstrated in single-photon experiments and a high efficiency of nonlinear orientation obtained in experiments with femtosecond pulses, this dye can be widely used in three-dimensional nanophotonic devices such as photonic crystals, optical computers, and optical memory. (letters)

  8. All-optical switchable holographic Fresnel lens based on azo-dye-doped polymer-dispersed liquid crystals.

    PubMed

    Jashnsaz, Hossein; Nataj, Nahid Hosain; Mohajerani, Ezeddin; Khabbazi, Amir

    2011-08-01

    Fabrication of an all-optical switchable holographic liquid crystal (LC) Fresnel lens based on azo-dye-doped polymer-dispersed LCs is reported using a Michelson interferometer. It is found that, upon circularly polarized photoirradiation, the diffraction efficiency of the fabricated Fresnel lens was increased significantly in a reversible manner. We believe this is due to the anisotropy induced by reorientation of the LC molecules coupled with azo-dye molecule orientation due to trans-cis-trans photoisomerization, which modulates the refractive index of the LC-rich regions. We also studied the effect of azo dye on the polarization dependency of the fabricated lens.

  9. Kinetics of azoreductase and assessment of toxicity of metabolic products from azo dyes by Pseudomonas luteola.

    PubMed

    Hu, T L

    2001-01-01

    This is a continuous study on a decolorization strain, Pseudomonas luteola, which involves treating seven azo dyes with different structures. This study focuses mainly on determining both the mechanism of decolorization by P. luteola and the activity of azoreductase from P. luteola as well as identifying and assessing the toxicity of metabolic products of azo dyes. The growth of P. luteola reached the stationary phase after shaking incubation for 24 hours. Then, while being kept static, the color of seven tested azo dyes (100 mg/l) could be removed. The proportion of color removal was between 59-99%, which figure is related to the structure of the dye. Monoazo dyes (RP2B, V2RP and Red 22) showed the fastest rate of decolorization, i.e. from 0.23-0.44 mg dye-mg cell-1 hr-1. P. luteola could remove the color of V2RP and a leather dye at a concentration of 200 mg/l, and as to the rest of the azo dyes, it could remove at a concentration of up to 100 mg/l. Decolorization of RP2B and Red 22 required activation energy of 7.00 J/mol and 6.63 J/mole, respectively, indicating that it was easier for azoreductase to decolorize structurally simple dyes. The kinetics of azoreductase towards seven azo dyes suggested a competitive inhibition model be applied. Microtox was used to analyze the toxicity of the metabolic products of azo dyes. EC50 showed differences in toxicity before and after the azo dyes had been metabolized. Analysis revealed significant differences between the results obtained by EC50 with Blue 15 and those obtained with the leather dye, indicating that the toxicities of the metabolic products were increased. The differences obtained by EC50 with Red 22, RP2P and V2RP were small, and Black 22 showed no such difference. Sulfanic acid and orthanilic acid may be the intermediate products of Violet 9 and RP2B, respectively. However, according to FT-IR analysis, aromatic amines were present in the metabolic product.

  10. Developing azo and formazan dyes based on environmental considerations: Salmonella mutagenicity.

    PubMed

    Edwards, Laura C; Freeman, Harold S; Claxton, Larry D

    2004-02-26

    In previous papers, the synthesis and chemical properties of iron-complexed azo and formazan dyes were reported. It was shown that in certain cases iron could be substituted for the traditionally used metals such as chromium and cobalt, without having an adverse effect on dye stability. While these results suggested that the iron analogs were potential replacements for the commercially used chromium and cobalt prototypes, characterization of potentially adverse environmental effects of the new dyes was deemed an essential step in their further development. The present paper provides results from using the Salmonella/mammalian microsome assay to determine the mutagenicity of some important commercial metal complexed dyes, their unmetallized forms, and the corresponding iron-complexed analogs. The study compared the mutagenic properties of six unmetallized azo dyes, six commercial cobalt- or chromium-complexed azo dyes, six iron-complexed azo dyes, six unmetallized formazan dyes, and six iron-complexed formazan dyes. The results of this study suggest that the mutagenicity of the unmetallized dye precursors plays a role in determining the mutagenicity of the iron-complexes. For the monoazo dye containing a nitro group, metal complex formation using iron or chromium decreased or removed mutagenicity in TA100; however, little reduction in mutagenicity was noted in TA98. For the formazan dye containing a nitro group, metal-complex formation using iron increased mutagenicity. Results varied for metal-complexes of azo and formazan dyes without nitro groups, but in general, the metal-complexed dyes based on mutagenic ligands were also mutagenic, while those dyes based on nonmutagenic ligands were nonmutagenic.

  11. Growth of vertically aligned ZnO nanorods using textured ZnO films

    PubMed Central

    2011-01-01

    A hydrothermal method to grow vertical-aligned ZnO nanorod arrays on ZnO films obtained by atomic layer deposition (ALD) is presented. The growth of ZnO nanorods is studied as function of the crystallographic orientation of the ZnO films deposited on silicon (100) substrates. Different thicknesses of ZnO films around 40 to 180 nm were obtained and characterized before carrying out the growth process by hydrothermal methods. A textured ZnO layer with preferential direction in the normal c-axes is formed on substrates by the decomposition of diethylzinc to provide nucleation sites for vertical nanorod growth. Crystallographic orientation of the ZnO nanorods and ZnO-ALD films was determined by X-ray diffraction analysis. Composition, morphologies, length, size, and diameter of the nanorods were studied using a scanning electron microscope and energy dispersed x-ray spectroscopy analyses. In this work, it is demonstrated that crystallinity of the ZnO-ALD films plays an important role in the vertical-aligned ZnO nanorod growth. The nanorod arrays synthesized in solution had a diameter, length, density, and orientation desirable for a potential application as photosensitive materials in the manufacture of semiconductor-polymer solar cells. PACS 61.46.Hk, Nanocrystals; 61.46.Km, Structure of nanowires and nanorods; 81.07.Gf, Nanowires; 81.15.Gh, Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.) PMID:21899743

  12. Morphology engineering of ZnO nanostructures for high performance supercapacitors: Enhanced electrochemistry of ZnO nanocones compared to ZnO nanowires.

    PubMed

    He, Xiaoli; Yoo, Joung; Lee, Min; Bae, Joonho

    2017-04-06

    In this work, the morphology of ZnO nanostructures is engineered to demonstrate enhanced supercapacitor characteristics of ZnO nanocones (NCs) compared to ZnO nanowires (NWs). ZnO NCs are obtained by chemically etching ZnO NWs. Electrochemical characteristics of ZnO NCs and NWs are extensively investigated to demonstrate morphology dependent capacitive performance of one dimensional ZnO nanostructures. Cyclic voltammetry measurements on these two kind of electrodes in three electrode cell confirms that ZnO NCs exhibit high specific capacitance of 378.5 F g-1 at a scan rate of 20 mV s-1, which is almost twice that of ZnO NWs (191.5 F g-1). The charge-discharge and EIS measurements also clearly results in enhanced capacitive performance of NCs as evidenced by higher specific capacitances and lower internal resistance. Asymmetric spuercapacitors are fabricated using activated carbon (AC) as negative electrode and ZnO NWs and NCs as positive electrodes. The ZnO NC//AC can deliver a maximum specific capacitance of 126 F g-1 at a current density of 1.33 A g-1 with an energy density of 25.2 W h kg-1 at the power density of 896.44 W kg-1. In contrast, ZnO NW//AC displays 63% of capacitance obtained from ZnO NC//AC supercapacitor. The enhanced performances of NCs are attributed to higher surface area of ZnO nanostructures after the morphology is altered from NWs to NCs.

  13. Structural, morphological and optical characterizations of ZnO:Al thin films grown on silicon substrates by pulsed laser deposition

    NASA Astrophysics Data System (ADS)

    Alyamani, A.; Sayari, A.; Albadri, A.; Albrithen, H.; El Mir, L.

    2016-09-01

    The pulsed laser deposition (PLD) technique is used to grow Al-doped ZnO (AZO) thin films at 500 ° C on silicon substrates under vacuum or oxygen gas background from ablating AZO nanoparticle targets synthesized via the sol-gel process. The structural, morphological and optical properties were characterized by using X-ray diffraction (XRD), scanning electron microscopy (SEM), transmission electron microscopy (TEM), atomic force microscopy (AFM) and spectroscopic ellipsometry (SE) techniques. XRD and TEM images show that AZO powder has a wurtzite-type structure and is composed of small prismatic-like shape nanoparticles with an average size of 30nm. The structural properties of the AZO films grown under oxygen show no significant changes compared to those of the film grown under vacuum. However, the optical properties show a dependence on the growth conditions of the AZO films. Highly c -axis-oriented AZO thin films were obtained with grain size ˜ 15 nm. The stress in the AZO films is tensile as measured from the c -parameter. The dielectric function, the refractive index and the extinction coefficient as a function of the photon energy for the AZO films were determined by using spectroscopic ellipsometry measurements in the photon energy region from 1 to 6eV. The band gap energy was observed to slightly decrease in the presence of the O2 gas background and this may be attributed to the stress. The surface and volume energy loss functions are calculated and exhibit different behaviors in the energy range 1-6eV. Refractive indices of 1.9-2.1 in the visible region were obtained for the AZO films. Also, the electronic carrier concentration appears to be related to the presence of O2 during the growth process.

  14. Fastest non-ionic azo dyes and transfer of their thermal isomerisation kinetics into liquid-crystalline materials.

    PubMed

    Garcia-Amorós, Jaume; Castro, M Cidália R; Coelho, Paulo; Raposo, M Manuela M; Velasco, Dolores

    2016-04-14

    Push-pull bithienylpyrrole-based azo dyes exhibit thermal isomerisation rates as fast as 1.4 μs in acetonitrile at 298 K becoming, thus, the fastest neutral azo dyes reported so far. These remarkably low relaxation times can be transferred into liquid-crystalline matrices enabling light-triggered oscillations in the optical density of the final material up to 11 kHz under ambient conditions.

  15. Nanometer-thick amorphous-SnO2 layer as an oxygen barrier coated on a transparent AZO electrode

    NASA Astrophysics Data System (ADS)

    Lee, Hee Sang; Woo, Seong Ihl

    2016-07-01

    It is necessary for transparent conducting electrodes used in dye-sensitized or perovskite solar cells to have high thermal stability which is required when TiO2 is coated on the electrode. AZO films with their low-cost and good TCO properties are unfortunately unstable above 300 °C in air because of adsorbed oxygen. In this paper, the thermal stability of AZO films is enhanced by depositing an oxygen barrier on AZO films to block the oxygen. As the barrier material, SnO2 is used due to its high heat stability, electrical conductivity, and transmittance. Moreover, when the SnO2 is grown as amorphous phase, the protective effect become greater than the crystalline phase. The thermal stability of the amorphous-SnO2/AZO films varies depending on the thickness of the amorphous SnO2 layer. Because of the outstanding oxygen blocking properties of amorphous SnO2, its optimal thickness is very thin and it results in only a slight decrease in transmittance. The sheet resistance of the amorphous-SnO2/AZO film is 5.4 Ω sq-1 after heat treatment at 500 °C for 30 min in air and the average transmittance in the visible region is 83.4%. The results show that the amorphous-SnO2/AZO films have thermal stability with excellent electrical and optical properties. [Figure not available: see fulltext.

  16. Broadband wide-angle antireflection enhancement in AZO/Si shell/core subwavelength grating structures with hydrophobic surface for Si-based solar cells.

    PubMed

    Leem, Jung Woo; Song, Young Min; Yu, Jae Su

    2011-09-12

    Broadband wide-angle antireflection characteristics of aluminum-doped zinc oxide (AZO)/silicon (Si) shell/core subwavelength grating (SWG) structures with a hydrophobic surface, together with theoretical prediction using a rigorous coupled-wave analysis simulation, were investigated for Si-based solar cells. The AZO films with different thicknesses were deposited on Si SWGs by rf magnetron sputtering method, which forms a shell/core structure. The AZO/Si shell/core SWGs reduced significantly the surface reflection compared to the AZO films/Si substrate. The coverage of AZO films on Si SWGs improved the antireflective property over a wider incident angle. The AZO/Si shell/core SWG structure with a 200 nm-thick AZO layer deposited at an rf power of 200 W exhibited a water contact angle of 123°. This structure also exhibited a low average reflectance of ~2% over a wide wavelength range of 300-2100 nm with a solar weighted reflectance of 2.8%, maintaining a reflectance of < 9.2% at wavelengths of 300-2100 nm up to the incident angle of θ(i) = 70°. The effective electrical properties of AZO films in AZO/Si shell/core SWGs were also analyzed.

  17. Energy-efficient photodegradation of azo dyes with TiO(2) nanoparticles based on photoisomerization and alternate UV-visible light.

    PubMed

    Zhang, Hao; Chen, Da; Lv, Xiaojun; Wang, Ying; Chang, Haixin; Li, Jinghong

    2010-02-01

    Herein, we demonstrated a UV-vis light alternate photocatalysis (UVLAP) strategy in the photodegradation of azo dyes. The UVLAP of azo dyes over TiO(2) catalysts exhibited significantly higher energy efficiency than the conventional UV process by 40%, which was attributed to the photoisomerization of azo dyes and the resulting diversity of dyes' cis and trans states in interfacial properties, including conductance and spatial effects. This UVLAP strategy could contribute to the energy-saving photodegradation of azo dyes and other pollutants with photoisomerization properties and facilitate the practical application of TiO(2) in the environmental remediation.

  18. Exploring High-Dimensional Data Space: Identifying Optimal Process Conditions in Photovoltaics

    SciTech Connect

    Suh, C.; Biagioni, D.; Glynn, S.; Scharf, J.; Contreras, M. A.; Noufi, R.; Jones, W. B.

    2011-01-01

    We demonstrate how advanced exploratory data analysis coupled to data-mining techniques can be used to scrutinize the high-dimensional data space of photovoltaics in the context of thin films of Al-doped ZnO (AZO), which are essential materials as a transparent conducting oxide (TCO) layer in CuIn{sub x}Ga{sub 1-x}Se{sub 2} (CIGS) solar cells. AZO data space, wherein each sample is synthesized from a different process history and assessed with various characterizations, is transformed, reorganized, and visualized in order to extract optimal process conditions. The data-analysis methods used include parallel coordinates, diffusion maps, and hierarchical agglomerative clustering algorithms combined with diffusion map embedding.

  19. Exploring High-Dimensional Data Space: Identifying Optimal Process Conditions in Photovoltaics: Preprint

    SciTech Connect

    Suh, C.; Glynn, S.; Scharf, J.; Contreras, M. A.; Noufi, R.; Jones, W. B.; Biagioni, D.

    2011-07-01

    We demonstrate how advanced exploratory data analysis coupled to data-mining techniques can be used to scrutinize the high-dimensional data space of photovoltaics in the context of thin films of Al-doped ZnO (AZO), which are essential materials as a transparent conducting oxide (TCO) layer in CuInxGa1-xSe2 (CIGS) solar cells. AZO data space, wherein each sample is synthesized from a different process history and assessed with various characterizations, is transformed, reorganized, and visualized in order to extract optimal process conditions. The data-analysis methods used include parallel coordinates, diffusion maps, and hierarchical agglomerative clustering algorithms combined with diffusion map embedding.

  20. Effects of pulsed sputtering frequency on the uniformity of Al:ZnO's transparent conductive oxide properties for solar cell applications

    SciTech Connect

    Yang, Wonkyun; Joo, Junghoon

    2009-11-15

    Bipolar pulsed magnetron sputtering is used to deposit Al doped ZnO (AZO) on a glass substrate for a transparent conducting oxide in a solar cell structure. A 5x25 in.{sup 2} AZO target was sputtered by 50-250 kHz bipolar pulsed dc power supply to deposit a 400x400 mm{sup 2} area by swinging back and forth. Sheet resistance, surface morphology, and optical transmittance were measured at different positions on 16 witness samples (small glass slides) to evaluate uniformity. In the thickness of 800 nm, the average value of sheet resistance was 30 {Omega}/{open_square} and the average resistivity was 2.1x10{sup -3} {Omega} cm. Transmittance was 50%-80% over the visible range. The nonuniformities of thickness, transmittance, and resistivity in the 400x400 mm{sup 2} area were 5.8%, 0.8%, and within 9.5%, respectively.

  1. Dye-Sensitization Of Nanocrystalline ZnO Thin Films

    SciTech Connect

    Ajimsha, R. S.; Tyagi, M.; Das, A. K.; Misra, P.; Kukreja, L. M.

    2010-12-01

    Nannocrystalline and nanoporus thin films of ZnO were synthesized on glass substrates by using wet chemical drop casting method. X-ray diffraction measurements on these samples confirmed the formation of ZnO nanocrystallites in hexagonal wurtzite phase with mean size of {approx}20 nm. Photo sensitization of these nanostructured ZnO thin films was carried out using three types of dyes Rhodamine 6 G, Chlorophyll and cocktail of Rhodamine 6 G and Chlorophyll in 1:1 ratio. Dye sensitized ZnO thin films showed enhanced optical absorption in visible spectral region compared to the pristine ZnO thin films.

  2. Systematic synthesis of ZnO nanostructures.

    PubMed

    Li, Peng; Wang, Dingsheng; Wei, Zhe; Peng, Qing; Li, Yadong

    2013-03-11

    In this study, we report a simple solution-phase method to prepare ZnO nanostructures with controllable morphologies. By using oleylamine (OAm) and dodecanol (DDL) as solvents, zinc oxide nanocrystals with tunable sizes and diverse shapes (hexagonal pyramids, bulletlike, and pencil-like shapes) have been obtained under mild conditions. At the same time, the introduction of presynthesized gold nanocrystals can also lead to the hybrid nanostructures of gold-zinc oxide hexagonal nanopyramids. In addition, the possible formation mechanism of the as-prepared ZnO nanostructures has been investigated. Notably, the unique optical properties of the ZnO nanostructures with different sizes and shapes have also been discussed. We hope that this strategy will be a general and effective method for fabricating other metal oxide nanocrystals.

  3. Biodegradation of textile azo dye by Shewanella decolorationis S12 under microaerophilic conditions.

    PubMed

    Xu, Meiying; Guo, Jun; Sun, Guoping

    2007-09-01

    The complete biodegradation of azo dye, Fast Acid Red GR, was observed under microaerophilic conditions by Shewanella decolorationis S12. Although the highest decolorizing rate was measured under anaerobic condition and the highest biomass was obtained under aerobic condition, a further biodegradation of decolorizing products can only be achieved under microaerophilic conditions. Under microaerophilic conditions, S. decolorationis S12 could use a range of carbon sources for azo dye decolorization, including lactate, formate, glucose and sucrose, with lactate being the optimal carbon source. Sulfonated aromatic amines were not detected during the biotransformation of Fast Acid Red GR, while H(2)S formed. The decolorizing products, aniline, 1,4-diaminobenzene and 1-amino-2-naphthol, were followed by complete biodegradation through catechol and 4-aminobenzoic acid based on the analysis results of GC-MS and HPLC.

  4. Influence of Methyl Substituents on Azo-Dye Photoalignment in Thin Films

    NASA Astrophysics Data System (ADS)

    Mikulich, V. S.; Murawski, An. A.; Muravsky, Al. A.; Agabekov, V. E.

    2016-03-01

    Photoalignment of azo dyes derived from salicylic acid in thin films (80-200 nm) was studied upon irradiation with polarized light (λmax = 457 nm). It is shown that different trends of molecular reorientation, i.e., in the layer plane or orthogonal to it, are observed depending on the position of the methyl substituent in the dye structure. A new distribution parameter Z that allows the portion of molecules reoriented in the layer plane during exposure to be determined is introduced. The novel azo dye potassium 3,7-bis[1-(4-hydroxy-3-carboxylate)phenylazo]-5,5'-dioxodibenzothiophene was synthesized. Its molecules are photoaligned in the layer plane upon irradiation with polarized light.

  5. Polarization-dependent circular Dammann grating made of azo-dye-doped liquid crystals.

    PubMed

    Luo, Dan; Sun, Xiao Wei; Dai, Hai Tao; Demir, Hilmi Volkan

    2011-05-20

    A polarization-dependent circular Dammann grating (CDG) was generated from an azo-dye-doped liquid crystal (LC) cell. A simple multiexposure photo-alignment process was used to fabricate a binary phase LC CDG zone plane, which was composed of an odd zone with a twisted nematic LC structure and an even zone with a homogenous LC structure. A two-order CDG with equal-intensity rings was produced through a Fourier transform. The maximum zeroth and first diffraction orders of obtained CDG can be separately achieved by rotating the analyzer's polarization direction. The CDG using an azo-dye-doped LC cell can be used to generate diffractions by lasers in a broad wavelength range, hence expanding possible device applications.

  6. Integration of nanofiltration and biological degradation of textile wastewater containing azo dye.

    PubMed

    Paździor, Katarzyna; Klepacz-Smółka, Anna; Ledakowicz, Stanisław; Sójka-Ledakowicz, Jadwiga; Mrozińska, Zdzisława; Zyłła, Renata

    2009-04-01

    The anaerobic biological azo dyes reduction process was successfully applied to decolourization of the concentrates from the nanofiltration treatment of real textile effluents. The anaerobic phase was followed by aerobic oxidation aimed at the destruction of the aromatic amine released from azo dye. In the first experiment sequential batch reactor (SBR) combining both the anaerobic and aerobic phase in one unit was used. In the second one the anaerobic stage was separated from the aerobic one. The anaerobic phase fulfilled its aim (decolourization) in both systems (over 90%). In opposite, the aromatic amine was completely degraded in the aerobic reactor (two-sludge system), whereas the orthanilic acid was not degraded (during the aerobic phase) in SBR reactor. The COD reduction was also higher in the two-sludge system than in SBR.

  7. Ultrafast degradation of azo dyes catalyzed by cobalt-based metallic glass

    NASA Astrophysics Data System (ADS)

    Qin, X. D.; Zhu, Z. W.; Liu, G.; Fu, H. M.; Zhang, H. W.; Wang, A. M.; Li, H.; Zhang, H. F.

    2015-12-01

    Reactivity and mass loss are considered mutually exclusive in conventional zero-valent metal (ZVM) technology to treat environmental contaminants. Here, we report the outstanding performance of Co-based metallic glass (MG) in degrading an aqueous solution of azo dye, thus eliminating this trade-off. Ball-milled Co-based MG powders completely degrade Acid Orange II at an ultrafast rate. The surface-area-normalized rate constant of Co-based MG powders was one order of magnitude higher than that of Co-based crystalline counterparts and three orders of magnitude higher than that of the widely studied Fe0 powders. The coordinatively unsaturated local structure in Co-based MG responds to the catalysis for degradation, resulting in very low mass loss. Wide applicability and good reusability were also present. Co-based MG is the most efficient material for azo dye degradation reported thus far, and will promote the practical application of MGs as functional materials.

  8. Degradation of azo dyes by oxidative processes--laccase and ultrasound treatment.

    PubMed

    Tauber, Michael M; Gübitz, Georg M; Rehorek, Astrid

    2008-07-01

    Azo dyes are of synthetic origin and their environmental fate is not well understood. They are resistant to direct aerobic bacterial degradation and form potentially carcinogenic aromatic amines by reduction of the azo group. This study shows that applying the oxidative processes of enzymatic treatment with laccase and ultrasound treatment, both alone and in combination, leads to dye degradation. Laccase treatment degraded both Acid Orange and Direct Blue dyes within 1-5 h but failed in the case of Reactive dyes, whereas ultrasound degraded all the dyes investigated (3-15 h). When applied as multi-stage combinations the treatments showed synergistic effects for dye degradation compared with individual treatments. Bulk light absorption (UV-Vis) and ion pairing HPLC were used for process monitoring. Additionally, mass spectrometry was used to elucidate the structures of intermediates arising from ultrasound treatment.

  9. Dynamics of photoinduced processes in liquid-crystal polymer films containing azo compounds

    SciTech Connect

    Simonov, A N; Larichev, A V

    1999-07-31

    The photoinduced processes in azo-compound-containing side-chain polymer films with liquid-crystal properties are examined theoretically. A model is proposed whereby it is possible to consider the dynamics of the optical response of a medium taking into account the anisotropic saturation in the angular distribution of the azo-dye isomers as well as the intermolecular interaction. The influence of the liquid-crystal ordering in the polymer is taken into account by introducing a phenomenological mean-field factor. Analytical solutions describing changes in the optical properties of a polymer film during the initial illumination stages are in good agreement with experimental data. (this issue is dedicated to the memory of s a akhmanov)

  10. Self-assembled cardanol azo derivatives as antifungal agent with chitin-binding ability.

    PubMed

    Mahata, Denial; Mandal, Santi M; Bharti, Rashmi; Gupta, Vinay Krishna; Mandal, Mahitosh; Nag, Ahindra; Nando, Golok B

    2014-08-01

    Cardanol is a non-isoprenoic phenolic lipid-mixture of distilled cashew nut shell liquid obtained from Anacardium occidentale. Herein, cardanol is purified from cashew nut shell liquid (CNSL) and synthesized to new compounds with different azo amphiphiles. These synthesized compounds are allowed to self-assembled in hydrophobic environment and checked antifungal activity against Candida albicans. Self-assembled structure of CABA showed higher antifungal activity (16μg/mL) and chitin-binding ability in comparison to CAP and CANB. Furthermore, the self-assembled azo amphiphiles are immobilized with silver ions to prepare hydrogel which showed eight folds enhanced antifungal activity. Toxicity is reduced by several folds of self-assembled or hydrogel structure in comparison to pure compounds. Thus, the self-assembled structure of amphiphiles and their hydrogels have been found to be new macromolecules of interest with potential use as antifungal drugs.

  11. Synthesis and cytotoxicity of azo nano-materials as new biosensors for L-Arginine determination.

    PubMed

    Shang, Xuefang; Luo, Leiming; Ren, Kui; Wei, Xiaofang; Feng, Yaqian; Li, Xin; Xu, Xiufang

    2015-06-01

    Inspired from biological counterparts, chemical modification of azo derivatives with function groups may provide a highly efficient method to detect amino acid. Herein, we have designed and prepared a series of azo nano-materials involving -NO2, -COOH, -SO3H and naphthyl group, which showed high response for Arginine (Arg) among normal twenty kinds of (Alanine, Valine, Leucine, Isoleucine, Methionine, Aspartic acid, Glutamic acid, Arginine, Glycine, Serine, Threonine, Asparagine, Phenylalanine, Histidine, Tryptophan, Proline, Lysine, Glutamine, Tyrosine and Cysteine). Furthermore, theoretical investigation further illustrated the possible binding mode in the host-guest interaction and the roles of molecular frontier orbitals in molecular interplay. In addition, nano-material 3 exhibited high binding ability for Arg and low cytotoxicity to KYSE450 cells over a concentration range of 5-50μmol·L(-1) which may be used a biosensor for the Arg detection in vivo.

  12. Solvation and equilibrium studies of some compounds containing azo and nitroso chromophores

    NASA Astrophysics Data System (ADS)

    Masoud, Mamdouh S.; Kamel, Hesham M.; Ali, Alaa E.

    2015-02-01

    The stability studies of biologically active phenylazo-dinitroso resorsinol and o-hydroxy phenyl azo-dinitroso resorsinol compounds were studied. The dissociation constants and the thermodynamic parameters of dissociation were evaluated and determined potentiometrically. Regression analysis is applied for correlating the different parameters by using the SPSS program. The results help to assign the solute-solvent interactions and the solvatochromic potential of the investigated compounds.

  13. Intracellular azo decolorization is coupled with aerobic respiration by a Klebsiella oxytoca strain.

    PubMed

    Yu, Lei; Zhang, Xiao-Yu; Xie, Tian; Hu, Jin-Mei; Wang, Shi; Li, Wen-Wei

    2015-03-01

    Reduction of azo dye methyl red coupled with aerobic respiration by growing cultures of Klebsiella oxytoca GS-4-08 was investigated. In liquid media containing dye and 0.6 % glucose in a mineral salts base, 100 mg l(-1) of the dye are completely removed in 3 h under shaking conditions. The dye cannot be aerobically decolorized by strain GS-4-08 without extra carbon sources, indicating a co-metabolism process. Higher initial dye concentration prolonged the lag phase of the cell growth, but final cell concentrations of each batches reached a same level with range from 6.3 to 7.6 mg l(-1) after the dye adaption period. This strain showed stronger dye tolerance and decolorization ability than many reported strains. Furthermore, a new intracellular oxygen-insensitive azoreductase was isolated from this strain, and the specific activity of enzyme was 0.846 and 0.633 U mg(-1) protein in the presence of NADH and NADPH, respectively. N,N dimethyl-p-phenylenediamine and anthranilic acid were stoichiometrically released from MR dye, indicating the breakage of azo bonds accounts for the intracellular decolorization. Combining the characteristics of azoreductase, the stoichiometry of EMP, and TCA cycle, the electron transfer chain theory of aerobic respiration, and the possible mechanism of aerobic respiration coupled with azo reduction by K. oxytoca GS-4-08 are proposed. This study is expected to provide a sound theoretical basis for the development of the K. oxytoca strain in aerobic process for azo dye containing wastewaters.

  14. Fluorescence energy transfer in quantum dot/azo dye complexes in polymer track membranes

    NASA Astrophysics Data System (ADS)

    Gromova, Yulia A.; Orlova, Anna O.; Maslov, Vladimir G.; Fedorov, Anatoly V.; Baranov, Alexander V.

    2013-10-01

    Fluorescence resonance energy transfer in complexes of semiconductor CdSe/ZnS quantum dots with molecules of heterocyclic azo dyes, 1-(2-pyridylazo)-2-naphthol and 4-(2-pyridylazo) resorcinol, formed at high quantum dot concentration in the polymer pore track membranes were studied by steady-state and transient PL spectroscopy. The effect of interaction between the complexes and free quantum dots on the efficiency of the fluorescence energy transfer and quantum dot luminescence quenching was found and discussed.

  15. Fluorescence energy transfer in quantum dot/azo dye complexes in polymer track membranes.

    PubMed

    Gromova, Yulia A; Orlova, Anna O; Maslov, Vladimir G; Fedorov, Anatoly V; Baranov, Alexander V

    2013-10-31

    Fluorescence resonance energy transfer in complexes of semiconductor CdSe/ZnS quantum dots with molecules of heterocyclic azo dyes, 1-(2-pyridylazo)-2-naphthol and 4-(2-pyridylazo) resorcinol, formed at high quantum dot concentration in the polymer pore track membranes were studied by steady-state and transient PL spectroscopy. The effect of interaction between the complexes and free quantum dots on the efficiency of the fluorescence energy transfer and quantum dot luminescence quenching was found and discussed.

  16. Chronic toxicity of azo and anthracenedione dyes to embryo-larval fathead minnow.

    PubMed

    Parrott, Joanne L; Bartlett, Adrienne J; Balakrishnan, Vimal K

    2016-03-01

    The toxicity of selected azo and anthracenedione dyes was studied using chronic exposures of embryo-larval fathead minnows (Pimephales promelas). Newly fertilized fathead minnow embryos were exposed through the egg stage, past hatching, through the larval stage (until 14 days post-hatch), with dye solutions renewed daily. The anthracenedione dyes Acid Blue 80 (AB80) and Acid Blue 129 (AB129) caused no effects in larval fish at the highest measured concentrations tested of 7700 and 6700 μg/L, respectively. Both azo dyes Disperse Yellow 7 (DY7) and Sudan Red G (SRG) decreased survival of larval fish, with LC50s (based on measured concentrations of dyes in fish exposure water) of 25.4 μg/L for DY7 and 16.7 μg/L for SRG. Exposure to both azo dyes caused a delayed response, with larval fish succumbing 4-10 days after hatch. If the exposures were ended at the embryo stage or just after hatch, the potency of these two dyes would be greatly underestimated. Concentrations of dyes that we measured entering the Canadian environment were much lower than those that affected larval fish survival in the current tests. In a total of 162 samples of different municipal wastewater effluents from across Canada assessed for these dyes, all were below detection limits. The similarities of the structures and larval fish responses for the two azo and two anthracenedione dyes in this study support the use of read-across data for risk assessment of these classes of compounds.

  17. Nanofabrication on ZnO nanowires

    SciTech Connect

    Zhan Jinhua; Bando, Yoshio; Hu, Junqing; Golberg, Dmitri

    2006-12-11

    ZnO nanowires were subjected to convergent electron beam irradiation in a 300 kV transmission electron microscope. The size of perforated hexagonal pores generated by irradiation can vary with the beam size. An irradiated area is denuded layer by layer via removal of Zn and O atoms. The polar ZnO surfaces have a higher resistance to irradiation than the unpolar ones. Ultrathin nanobridges, {approx}1 nm thick or less, were generated through deliberate removal of Zn and O atomic monolayers.

  18. Magnetic properties of ZnO nanoparticles.

    PubMed

    Garcia, M A; Merino, J M; Fernández Pinel, E; Quesada, A; de la Venta, J; Ruíz González, M L; Castro, G R; Crespo, P; Llopis, J; González-Calbet, J M; Hernando, A

    2007-06-01

    We experimentally show that it is possible to induce room-temperature ferromagnetic-like behavior in ZnO nanoparticles without doping with magnetic impurities but simply inducing an alteration of their electronic configuration. Capping ZnO nanoparticles ( approximately 10 nm size) with different organic molecules produces an alteration of their electronic configuration that depends on the particular molecule, as evidenced by photoluminescence and X-ray absorption spectroscopies and altering their magnetic properties that varies from diamagnetic to ferromagnetic-like behavior.

  19. Superhydrophobicity of Hierarchical and ZNO Nanowire Coatings

    DTIC Science & Technology

    2014-01-01

    constructed by growing various lengths of ZnO nanowires on micro- scale Si pyramids produced by chemical etching. The nano-size effect on wettability of...Chemistry A PAPER Pu bl is he d on 1 8 D ec em be r 20 13 . D ow nl oa de d by A ir F or ce B as e R es ea rc h L ab or at or y (A FR L ) D...The nano-size effect on wettability of nano/micro complex structures has been investigated by adjusting the ZnO nanowire length. As the nanowire

  20. Retardation of the orientation relaxation of azo-dye doped amorphous polymers upon photoinduced isomerization

    NASA Astrophysics Data System (ADS)

    Chan, S. W.; Quatela, A.; Casalboni, M.; Nunzi, J.-M.

    2006-08-01

    The orientation relaxation upon photo-induced isomerization of azo-dyes was studied. All-optical poling (AOP) and photo-induced birefringence, which are based on the mechanism of angular selective photo-isomerization, were employed to manipulate the angular distribution of azo-dyes (Disperse-red 1) doped in three different amorphous polymers: (poly(methyl methacrylate) PMMA, poly(carbonate) PC and poly(sulfone) PSU), with different glass transition temperature (T g). In the case of AOP, quasi-permanent macroscopic second-order nonlinear optical susceptibility χ (2) was inscribed in the dye-doped centro-symmetric polymer systems, while in the case of photo-induced birefringence, quasi-permanent birefringence Δn was inscribed in the dye-doped isotropic polymer systems. Relaxation of χ (2) and Δn were monitored upon different duration of AOP and photo-induced birefringence preparation. Experimental results show that azo-dye orientation relaxation follows the duration of the photo-nduced isomerization process: the longer the photo-induced isomerization process, the slower the relaxation of the inscribed χ (2) and Δn. In addition, retardation of the orientation relaxation does not follow a simple relation with hardness (T g) of the polymer host. Causes of the orientation relaxation retardation are discussed.