Correlation of Mechanical Properties in Bulk Metallic Glasses with 27Al NMR Characteristics

DTIC Science & Technology

2011-12-01

recycle delay of 300 ms. Magnetization measurements were conducted at room temperature using a Quantum Design SQUID magne- tometer. The magnetization of...Gangopadhyay A K, et al. First X-ray scattering studies on electrostatically levitated metallic liquids: Demonstrated influence of local icosahedral

Strain-compensated (Ga,In)N/(Al,Ga)N/GaN multiple quantum wells for improved yellow/amber light emission

DOE Office of Scientific and Technical Information (OSTI.GOV)

Lekhal, K.; Damilano, B., E-mail: bd@crhea.cnrs.fr; De Mierry, P.

2015-04-06

Yellow/amber (570–600 nm) emitting In{sub x}Ga{sub 1−x}N/Al{sub y}Ga{sub 1−y}N/GaN multiple quantum wells (QWs) have been grown by metal organic chemical vapor deposition on GaN-on- sapphire templates. When the (Al,Ga)N thickness of the barrier increases, the room temperature photoluminescence is red-shifted while its yield increases. This is attributed to an increase of the QW internal electric field and an improvement of the material quality due to the compensation of the compressive strain of the In{sub x}Ga{sub 1−x}N QWs by the Al{sub y}Ga{sub 1−y}N layers, respectively.

Band-edge absorption coefficients from photoluminescence in semiconductor multiple quantum wells

NASA Technical Reports Server (NTRS)

Kost, Alan; Zou, Yao; Dapkus, P. D.; Garmire, Elsa; Lee, H. C.

1989-01-01

A novel approach to determining absorption coefficients in thin films using luminescence is described. The technique avoids many of the difficulties typically encountered in measurements of thin samples, Fabry-Perot effects, for example, and can be applied to a variety of materials. The absorption edge for GaAs/AlGaAs multiple quantum well structures, with quantum well widths ranging from 54 to 193 A is examined. Urbach (1953) parameters and excitonic linewidths are tabulated.

Refractive indices measurement of (GaInP)m/(AlInP)n quasi-quanternaries and GaInP/AllnP multiple quantum wells

NASA Astrophysics Data System (ADS)

Kaneko, Yawara; Kishino, Katsumi

1994-08-01

Measurements of the refractive indices of (GaInP)m/(AlInP)n quasi-quaternaries (QQs), GaInP/AlInP multiple quantum wells (MQWs), and (Al(x)Ga(1 - x))(0.5) In(0.5)P quanternaries were made systematically, using the reflectance method, in photon energy ranges nearly as high as up to the band gap. Data was fitted using the modified single effective oscillator (MSEO) method. A single oscillator energy E(sub zero) of 4.17 + 0.49 x(sub eg) and dispersion energy (E(sub d) of 35.79 - 1.16 x(sub eg) was obtained for (GaInP)m/(AlInP)2 QQs, where the equivalent Al composition x(sub eg) is defined by the stacking film thickness ratio x(sub eg) = d(AlInP)/(d(GaInP) + d(AlInP). Agreement of refractive indices obtained for QQs and quaternary compounds with equivalent x(sub eg) has been confirmed. Still, for the GaInP/AlInP MQWs, MSEO fitting was also agreeable, using the same oscillator energy E(sub zero) and dispersion energy E(sub d) of the (GaInP)m/(AlInP)2 QQs with the same thickness ratio, and substituting band gap energy E(sub Gamma) values shifted due to quantum effects.

Experimental characterization of quantum correlated triple beams generated by cascaded four-wave mixing processes

NASA Astrophysics Data System (ADS)

Qin, Zhongzhong; Cao, Leiming; Jing, Jietai

2015-05-01

Quantum correlations and entanglement shared among multiple modes are fundamental ingredients of most continuous-variable quantum technologies. Recently, a method used to generate multiple quantum correlated beams using cascaded four-wave mixing (FWM) processes was theoretically proposed and experimentally realized by our group [Z. Qin et al., Phys. Rev. Lett. 113, 023602 (2014)]. Our study of triple-beam quantum correlation paves the way to showing the tripartite entanglement in our system. Our system also promises to find applications in quantum information and precision measurement such as the controlled quantum communications, the generation of multiple quantum correlated images, and the realization of a multiport nonlinear interferometer. For its applications, the degree of quantum correlation is a crucial figure of merit. In this letter, we experimentally study how various parameters, such as the cell temperatures, one-photon, and two-photon detunings, influence the degree of quantum correlation between the triple beams generated from the cascaded two-FWM configuration.

Experimental characterization of quantum correlated triple beams generated by cascaded four-wave mixing processes

DOE Office of Scientific and Technical Information (OSTI.GOV)

Qin, Zhongzhong; Cao, Leiming; Jing, Jietai, E-mail: jtjing@phy.ecnu.edu.cn

2015-05-25

Quantum correlations and entanglement shared among multiple modes are fundamental ingredients of most continuous-variable quantum technologies. Recently, a method used to generate multiple quantum correlated beams using cascaded four-wave mixing (FWM) processes was theoretically proposed and experimentally realized by our group [Z. Qin et al., Phys. Rev. Lett. 113, 023602 (2014)]. Our study of triple-beam quantum correlation paves the way to showing the tripartite entanglement in our system. Our system also promises to find applications in quantum information and precision measurement such as the controlled quantum communications, the generation of multiple quantum correlated images, and the realization of a multiportmore » nonlinear interferometer. For its applications, the degree of quantum correlation is a crucial figure of merit. In this letter, we experimentally study how various parameters, such as the cell temperatures, one-photon, and two-photon detunings, influence the degree of quantum correlation between the triple beams generated from the cascaded two-FWM configuration.« less

A design strategy for achieving more than 90% of the overlap integral of electron and hole wavefunctions in high-AlN-mole-fraction Al x Ga1- x N multiple quantum wells

NASA Astrophysics Data System (ADS)

Kojima, Kazunobu; Furusawa, Kentaro; Yamazaki, Yoshiki; Miyake, Hideto; Hiramatsu, Kazumasa; Chichibu, Shigefusa F.

2017-01-01

A strategy for increasing the square of an overlap integral of electron and hole wavefunctions (I 2) in polar c-plane Al x Ga1- x N multiple quantum wells (MQWs) is proposed. By applying quadratic modulation to AlN mole fractions along the c-axis, local bandgap energies and concentrations of immobile charges induced by polarization discontinuity are simultaneously controlled throughout the MQW structure, and optimized band profiles are eventually achieved. The I 2 value can be substantially increased to 94% when the well width (L w) is smaller than 4.0 nm. In addition, I 2 greater than 80% is predicted even for thick MQWs with L w of 10 nm.

Room temperature spin diffusion in (110) GaAs/AlGaAs quantum wells

PubMed Central

2011-01-01

Transient spin grating experiments are used to investigate the electron spin diffusion in intrinsic (110) GaAs/AlGaAs multiple quantum well at room temperature. The measured spin diffusion length of optically excited electrons is about 4 μm at low spin density. Increasing the carrier density yields both a decrease of the spin relaxation time and the spin diffusion coefficient Ds. PMID:21711662

Molecular beam epitaxy growth of high electron mobility InAs/AlSb deep quantum well structure

NASA Astrophysics Data System (ADS)

Wang, Juan; Wang, Guo-Wei; Xu, Ying-Qiang; Xing, Jun-Liang; Xiang, Wei; Tang, Bao; Zhu, Yan; Ren, Zheng-Wei; He, Zhen-Hong; Niu, Zhi-Chuan

2013-07-01

InAs/AlSb deep quantum well (QW) structures with high electron mobility were grown by molecular beam epitaxy (MBE) on semi-insulating GaAs substrates. AlSb and Al0.75Ga0.25Sb buffer layers were grown to accommodate the lattice mismatch (7%) between the InAs/AlSb QW active region and GaAs substrate. Transmission electron microscopy shows abrupt interface and atomic force microscopy measurements display smooth surface morphology. Growth conditions of AlSb and Al0.75Ga0.25Sb buffer were optimized. Al0.75Ga0.25Sb is better than AlSb as a buffer layer as indicated. The sample with optimal Al0.75Ga0.25Sb buffer layer shows a smooth surface morphology with root-mean-square roughness of 6.67 Å. The electron mobility has reached as high as 27 000 cm2/Vs with a sheet density of 4.54 × 1011/cm2 at room temperature.

Laser diode arrays based on AlGaAs/GaAs quantum-well heterostructures with an efficiency up to 62%

NASA Astrophysics Data System (ADS)

Ladugin, M. A.; Marmalyuk, A. A.; Padalitsa, A. A.; Telegin, K. Yu; Lobintsov, A. V.; Sapozhnikov, S. M.; Danilov, A. I.; Podkopaev, A. V.; Simakov, V. A.

2017-08-01

The results of development of quasi-cw laser diode arrays operating at a wavelength of 808 nm with a high efficiency are demonstrated. The laser diodes are based on semiconductor AlGaAs/GaAs quantum-well heterostructures grown by MOCVD. The measured spectral, spatial, electric and power characteristics are presented. The output optical power of the array with an emitting area of 5 × 10 mm is 2.7 kW at a pump current of 100 A, and the maximum efficiency reaches 62%.

Optical bistability and multistability in a defect slab doped by GaAs/AlGaAs multiple quantum wells

NASA Astrophysics Data System (ADS)

Seyyed, Hossein Asadpour; G, Solookinejad; M, Panahi; E Ahmadi, Sangachin

2016-05-01

We proposed a new model for controlling the optical bistability (OB) and optical multistability (OM) in a defect slab doped with four-level GaAs/AlGaAs multiple quantum wells with 15 periods of 17.5 nm GaAs wells and 15-nm Al0.3 Ga0.7As barriers. The effects of biexciton energy renormalization, exciton spin relaxation, and thickness of the slab on the OB and OM properties of the defect slab were theoretically investigated. We found that the transition from OB to OM or vice versa is possible by adjusting the controllable parameters in a lab. Moreover, the transmission, reflection, and absorption properties of the weak probe light through the slab were also discussed in detail.

Analysis and investigation of temperature and hydrostatic pressure effects on optical characteristics of multiple quantum well slow light devices.

PubMed

Abdolhosseini, Saeed; Kohandani, Reza; Kaatuzian, Hassan

2017-09-10

This paper represents the influences of temperature and hydrostatic pressure variations on GaAs/AlGaAs multiple quantum well slow light systems based on coherence population oscillations. An analytical model in non-integer dimension space is used to study the considerable effects of these parameters on optical properties of the slow light apparatus. Exciton oscillator strength and fractional dimension constants have special roles on the analytical model in fractional dimension. Hence, the impacts of hydrostatic pressure and temperature on exciton oscillator strength and fractional dimension quantity are investigated theoretically in this paper. Based on the achieved results, temperature and hydrostatic pressure play key roles on optical parameters of the slow light systems, such as the slow down factor and central energy of the device. It is found that the slope and value of the refractive index real part change with alterations of temperature and hydrostatic pressure in the range of 5-40 deg of Kelvin and 1 bar to 2 kbar, respectively. Thus, the peak value of the slow down factor can be adjusted by altering these parameters. Moreover, the central energy of the device shifts when the hydrostatic pressure is applied to the slow light device or temperature is varied. In comparison with previous reported experimental results, our simulations follow them successfully. It is shown that the maximum value of the slow down factor is estimated close to 5.5×10 4 with a fine adjustment of temperature and hydrostatic pressure. Meanwhile, the central energy shift of the slow light device rises up to 27 meV, which provides an appropriate basis for different optical devices in which multiple quantum well slow light is one of their essential subsections. This multiple quantum well slow light device has potential applications for use as a tunable optical buffer and pressure/temperature sensors.

Electron-electron interaction in Multiple Quantum Wells

NASA Astrophysics Data System (ADS)

Zybert, M.; Marchewka, M.; Tomaka, G.; Sheregii, E. M.

2012-07-01

The complex investigation of the magneto-transport effects in structures containing multiple quantum well (MQWs) based on the GaAs/AlGaAs-heterostructures has been performed. The MQWs investigated have different electron densities in QWs. The parameters of 2DEG in MQWs were determined from the data of the Integer Quantum Hall Effect (IQHE) and Shubnikov-de Haas oscillations (SdH) observed at low temperatures (0.6-4.2 K). The method of calculation of the electron states energies in MQWs has been developed which is based on the splitting of these states due to the exchange interaction (SAS-splitting, see D. Płoch et al., Phys. Rev. B 79 (2009) 195434) including the screening of this interaction. The IQHE and SdH observed in these multilayer structures with the third degree of freedom for electrons are interpreted from this.

Analysis of the abnormal voltage-current behaviors on localized carriers of InGaN/GaN multiple quantum well from electron blocking layer

NASA Astrophysics Data System (ADS)

Nam, Giwoong; Kim, Byunggu; Leem, Jae-Young; Lee, Dong-Yul; Kim, Jong Su; Kim, Jin Soo

2013-11-01

The effect of an electron blocking layer (EBL) on the V — I curves for GaN/InGaN multiple quantum wells is investigated. For the first time, we found that the curves intersected at 3.012 V, and we investigated the reason for the intersection. The forward voltage in LEDs with a p-AlGaN EBL is larger than it is without the p-AlGaN EBL at low injection currents because the Mg-doping efficiency for the p-GaN layer is higher than that for the p-AlGaN layer. However, the forward voltage in LEDs with a p-AlGaN EBL is smaller than it is without the p-AlGaN EBL at high injection currents because the carriers overflow from the active layer when the injection current increases in LEDs without a p-AlGaN EBL, in case of LEDs with a p-AlGaN EBL, the carriers are blocked by the EBL.

Excitonic recombination dynamics in non-polar GaN/AlGaN quantum wells

NASA Astrophysics Data System (ADS)

Rosales, D.; Gil, B.; Bretagnon, T.; Guizal, B.; Zhang, F.; Okur, S.; Monavarian, M.; Izyumskaya, N.; Avrutin, V.; Özgür, Ü.; Morkoç, H.; Leach, J. H.

2014-02-01

The optical properties of GaN/Al0.15Ga0.85N multiple quantum wells are examined in 8 K-300 K temperature range. Both polarized CW and time resolved temperature-dependent photoluminescence experiment are performed so that we can deduce the relative contributions of the non-radiative and radiative recombination processes. From the calculation of the proportion of the excitonic population having wave vector in the light cone, we can deduce the variation of the radiative decay time with temperature. We find part of the excitonic population to be localized in concert with the report of Corfdir et al. (Jpn. J. Appl. Phys., Part 2 52, 08JC01 (2013)) in case of a-plane quantum wells.

Frequency doubling of an InGaAs multiple quantum wells semiconductor disk laser

NASA Astrophysics Data System (ADS)

Lidan, Jiang; Renjiang, Zhu; Maohua, Jiang; Dingke, Zhang; Yuting, Cui; Peng, Zhang; Yanrong, Song

2018-01-01

We demonstrate a good beam quality 483 nm blue coherent radiation from a frequency doubled InGaAs multiple quantum wells semiconductor disk laser. The gain chip is consisted of 6 repeats of strain uncompensated InGaAs/GaAs quantum wells and 25 pairs of GaAs/AlAs distributed Bragg reflector. A 4 × 4 × 7 mm3 type I phase-matched BBO nonlinear crystal is used in a V-shaped laser cavity for the second harmonic generation, and 210 mW blue output power is obtained when the absorbed pump power is 3.5 W. The M2 factors of the laser beam in x and y directions are about 1.04 and 1.01, respectively. The output power of the blue laser is limited by the relatively small number of the multiple quantum wells, and higher power can be expected by increasing the number of the multiple quantum wells and improving the heat management of the laser.

Controlled synthesis of AlN/GaN multiple quantum well nanowire structures and their optical properties.

PubMed

Qian, Fang; Brewster, Megan; Lim, Sung K; Ling, Yichuan; Greene, Christopher; Laboutin, Oleg; Johnson, Jerry W; Gradečak, Silvija; Cao, Yu; Li, Yat

2012-06-13

We report the controlled synthesis of AlN/GaN multi-quantum well (MQW) radial nanowire heterostructures by metal-organic chemical vapor deposition. The structure consists of a single-crystal GaN nanowire core and an epitaxially grown (AlN/GaN)(m) (m = 3, 13) MQW shell. Optical excitation of individual MQW nanowires yielded strong, blue-shifted photoluminescence in the range 340-360 nm, with respect to the GaN near band-edge emission at 368.8 nm. Cathodoluminescence analysis on the cross-sectional MQW nanowire samples showed that the blue-shifted ultraviolet luminescence originated from the GaN quantum wells, while the defect-associated yellow luminescence was emitted from the GaN core. Computational simulation provided a quantitative analysis of the mini-band energies in the AlN/GaN superlattices and suggested the observed blue-shifted emission corresponds to the interband transitions between the second subbands of GaN, as a result of quantum confinement and strain effect in these AlN/GaN MQW nanowire structures.

Electronic and optical properties of GaAs/AlGaAs Fibonacci ordered multiple quantum well systems

NASA Astrophysics Data System (ADS)

Amini, M.; Soleimani, M.; Ehsani, M. H.

2017-12-01

We numerically investigated the optical rectification coefficients (ORCs), transmission coefficient, energy levels and corresponding eigen-functions of GaAs/AlGaAs Fibonacci ordered multiple quantum well systems (FO-MQWs) in the presence of an external electric field. In our calculations, two different methods, including transfer matrix and finite-difference have been used. It has been illustrated that with three types of the FO-MQWs, presented here, localization of the wave-function in any position of the structure is possible. Therefore, managing the electron distribution within the system is easier now. Finally, using the presented structures we could tune the position and amplitude of the ORCs.

Dependence of threshold current on the number of wells in AlGaAs-GaAs quantum well lasers

DOE Office of Scientific and Technical Information (OSTI.GOV)

Blood, P.; Fletcher, E.D.; Woodbridge, K.

1985-08-01

GaAs-AlGaAs multiple quantum well injection lasers have been grown by molecular beam epitaxy with different numbers (N) of uncoupled GaAs wells 25 A wide symmetrically disposed about the center of a 4000-A-wide waveguide. The devices emit at about 770 nm and for N = 4 the broad area threshold current density is 1.1 kA cm/sup -2/. The threshold current increases with increasing N (2

Self-assembly of vertically aligned quantum ring-dot structure by Multiple Droplet Epitaxy

NASA Astrophysics Data System (ADS)

Elborg, Martin; Noda, Takeshi; Mano, Takaaki; Kuroda, Takashi; Yao, Yuanzhao; Sakuma, Yoshiki; Sakoda, Kazuaki

2017-11-01

We successfully grow vertically aligned quantum ring-dot structures by Multiple Droplet Epitaxy technique. The growth is achieved by depositing GaAs quantum rings in a first droplet epitaxy process which are subsequently covered by a thin AlGaAs barrier. In a second droplet epitaxy process, Ga droplets preferentially position in the center indentation of the ring as well as attached to the edge of the ring in [ 1 1 bar 0 ] direction. By designing the ring geometry, full selectivity for the center position of the ring is achieved where we crystallize the droplets into quantum dots. The geometry of the ring and dot as well as barrier layer can be controlled in separate growth steps. This technique offers great potential for creating complex quantum molecules for novel quantum information technologies.

Influence of template properties and quantum well number on stimulated emission from Al0.7Ga0.3N/Al0.8Ga0.2N quantum wells

NASA Astrophysics Data System (ADS)

Jeschke, J.; Martens, M.; Hagedorn, S.; Knauer, A.; Mogilatenko, A.; Wenzel, H.; Zeimer, U.; Enslin, J.; Wernicke, T.; Kneissl, M.; Weyers, M.

2018-03-01

AlGaN multiple quantum well laser heterostructures for emission around 240 nm have been grown by metalorganic vapor phase epitaxy on epitaxially laterally overgrown (ELO) AlN/sapphire templates. The edge emitting laser structures showed optically pumped lasing with threshold power densities in the range of 2 MW cm-2. The offcut angle of the sapphire substrates as well as the number and the width of the quantum wells were varied while keeping the total thickness of the gain region constant. A larger offcut angle of 0.2° leads to step bunching on the surface as well as Ga accumulation at the steps, but also to an increased inclination of threading dislocations and coalescence boundaries resulting in a reduced dislocation density and thus a reduced laser threshold in comparison to lasers grown on ELO with an offcut of 0.1°. For low losses, samples with fewer QWs exhibited a lower lasing threshold due to a reduced transparency pump power density while for high losses, caused by a higher threading dislocation density, the quadruple quantum well was favorable due to its higher maximum gain.

Reduction in the concentration of cation vacancies by proper Si-doping in the well layers of high AlN mole fraction Al{sub x}Ga{sub 1–x}N multiple quantum wells grown by metalorganic vapor phase epitaxy

DOE Office of Scientific and Technical Information (OSTI.GOV)

Chichibu, S. F., E-mail: chichibulab@yahoo.co.jp; Ishikawa, Y.; Furusawa, K.

2015-09-21

Appropriate-amount Si-doping in the well layers significantly improved the luminescence efficiency of Al{sub 0.68}Ga{sub 0.32}N/Al{sub 0.77}Ga{sub 0.23}N multiple quantum wells. To understand the mechanisms, spatio-time-resolved cathodoluminescence measurements and self-consistent Schrödinger-Poisson calculations were carried out. The increase in the luminescence lifetime at room temperature, which reflects the decrease in the concentration of nonradiative recombination centers (NRCs), was correlated with increased terrace width of Si-doped wells. The results suggest the importance of H{sub 3}SiNH{sub 2} doping-reactant formation that gives rise to enhanced decomposition of NH{sub 3} and provides wetting conditions by surface Si-N bonds, which reduce the total energy and concentration ofmore » NRCs composed of cation vacancies.« less

Vertical cavity surface-emitting semiconductor lasers with injection laser pumping

NASA Astrophysics Data System (ADS)

McDaniel, D. L., Jr.; McInerney, J. G.; Raja, M. Y. A.; Schaus, C. F.; Brueck, S. R. J.

1990-05-01

Continuous-wave GaAs/GaAlAs edge-emitting diode lasers were used to pump GaAs/AlGaAs and InGaAs/AlGaAs vertical cavity surface-emitting lasers (VCSELs) with resonant periodic gain (RPG) at room temperature. Pump threshold as low as 11 mW, output powers as high as 27 mW at 850 nm, and external differential quantum efficiencies of about 70 percent were observed in GaAs/AlGaAs surface -emitters; spectral brightness 22 times that of the pump laser was also observed. Output powers as high as 85 mW at 950 nm and differential quantum efficiencies of up to 58 percent were recorded for the InGaAs surface-emitting laser. This is the highest quasi-CW output power ever reported for any RPG VCSEL, and the first time such a device has been pumped using an injection laser diode.

Nanoscale visualization of electronic properties of AlxGa1-xN/AlyGa1-yN multiple quantum-well heterostructure by spreading resistance microscopy

NASA Astrophysics Data System (ADS)

Sviridov, D. E.; Kozlovsky, V. I.; Rong, X.; Chen, G.; Wang, X.; Jmerik, V. N.; Kirilenko, D. A.; Ivanov, S. V.

2017-01-01

Cross-sectional spreading resistance microscopy has been used to investigate nanoscale variations in electronic properties of an undoped Al0.75Ga0.25N/Al0.95Ga0.05N multiple quantum well (MQW) heterostructure grown by plasma-assisted molecular beam epitaxy on an AlN/c-sapphire template, prepared by metalorganic vapor phase epitaxy. It is found that a current signal from the MQWs can be detected only at a negative sample bias. Moreover, its value changes periodically from one quantum well (QW) to another. Analysis of the current-voltage characteristics of the contacts of a tip with the structure layers showed that periodic contrast of MQWs is the result of fluctuations of the chemical composition of the QWs and the concentration of electrons accumulated in them. Mathematical simulations indicate that this modulation is associated with the periodic fluctuations of an Al-mole fraction in the barrier layers of the structure due to counter gradients of the intensity of Al and Ga molecular fluxes across the surface of a substrate rotating slowly during growth. The nanoscale fluctuations of the current contrast observed along the QW layers are caused, most likely, by the presence of the areas of lateral carrier localization, which originate during the formation of QWs by sub-monolayer digital alloying technique.

Emission wavelength of AlGaAs-GaAs multiple quantum well lasers

DOE Office of Scientific and Technical Information (OSTI.GOV)

Blood, P.; Fletcher, E.D.; Hulyer, P.J.

1986-04-28

We have recorded spontaneous emission spectra from multiple quantum well lasers grown by molecular beam epitaxy with 25-A-wide GaAs wells by opening a window in the top contact stripe. These spectra have a low-energy tail and consequently the gain spectra derived from them show that laser emission occurs at a lower photon energy than the lowest energy confined particle transition. The observed laser wavelength and threshold current are consistent with the position of the peak in the gain spectrum.

On the increased efficiency in InGaN-based multiple quantum wells emitting at 530-590 nm with AlGaN interlayers

NASA Astrophysics Data System (ADS)

Koleske, D. D.; Fischer, A. J.; Bryant, B. N.; Kotula, P. G.; Wierer, J. J.

2015-04-01

InGaN/AlGaN/GaN-based multiple quantum wells (MQWs) with AlGaN interlayers (ILs) are investigated, specifically to examine the fundamental mechanisms behind their increased radiative efficiency at wavelengths of 530-590 nm. The AlzGa1-zN (z 0.38) IL is 1-2 nm thick, and is grown after and at the same growth temperature as the 3 nm thick InGaN quantum well (QW). This is followed by an increase in temperature for the growth of a 10 nm thick GaN barrier layer. The insertion of the AlGaN IL within the MQW provides various benefits. First, the AlGaN IL allows for growth of the InxGa1-xN QW well below typical growth temperatures to achieve higher x (up to 0.25). Second, annealing the IL capped QW prior to the GaN barrier growth improves the AlGaN IL smoothness as determined by atomic force microscopy, improves the InGaN/AlGaN/GaN interface quality as determined from scanning transmission electron microscope images and x-ray diffraction, and increases the radiative efficiency by reducing non-radiative defects as determined by time-resolved photoluminescence measurements. Finally, the AlGaN IL increases the spontaneous and piezoelectric polarization induced electric fields acting on the InGaN QW, providing an additional red-shift to the emission wavelength as determined by Schrodinger-Poisson modeling and fitting to the experimental data. The relative impact of increased indium concentration and polarization fields on the radiative efficiency of MQWs with AlGaN ILs is explored along with implications to conventional longer wavelength emitters.

Room-Temperature Quantum Cascade Laser: ZnO/Zn1- x Mg x O Versus GaN/Al x Ga1- x N

NASA Astrophysics Data System (ADS)

Chou, Hung Chi; Mazady, Anas; Zeller, John; Manzur, Tariq; Anwar, Mehdi

2013-05-01

A ZnO/Zn1- x Mg x O-based quantum cascade laser (QCL) is proposed as a candidate for generation of THz radiation at room temperature. The structural and material properties, field dependence of the THz lasing frequency, and generated power are reported for a resonant phonon ZnO/Zn0.95Mg0.05O QCL emitting at 5.27 THz. The theoretical results are compared with those from GaN/Al x Ga1- x N QCLs of similar geometry. Higher calculated optical output powers [ {P}_{{ZnMgO}} = 2.89 mW (nonpolar) at 5.27 THz and 2.75 mW (polar) at 4.93 THz] are obtained with the ZnO/Zn0.95Mg0.05O structure as compared with GaN/Al0.05Ga0.95N QCLs [ {P}_{{AlGaN}} = 2.37 mW (nonpolar) at 4.67 THz and 2.29 mW (polar) at 4.52 THz]. Furthermore, a higher wall-plug efficiency (WPE) is obtained for ZnO/ZnMgO QCLs [24.61% (nonpolar) and 23.12% (polar)] when compared with GaN/AlGaN structures [14.11% (nonpolar) and 13.87% (polar)]. These results show that ZnO/ZnMgO material is optimally suited for THz QCLs.

Design of Al-rich AlGaN quantum well structures for efficient UV emitters

NASA Astrophysics Data System (ADS)

Funato, Mitsuru; Ichikawa, Shuhei; Kumamoto, Kyosuke; Kawakami, Yoichi

2017-02-01

The effects of the structure design of AlGaN-based quantum wells (QWs) on the optical properties are discussed. We demonstrate that to achieve efficient emission in the germicidal wavelength range (250 - 280 nm), AlxGa1-xN QWs in an AlyGa1-yN matrix (x < y) is quite effective, compared with those in an AlN matrix: Time-resolved photoluminescence and cathodoluminescence spectroscopies show that the AlyGa1-yN matrix can enhance the radiative recombination process and can prevent misfit dislocations, which act as non-radiative recombination centers, from being induced in the QW interface. As a result, the emission intensity at room temperature is about 2.7 times larger for the AlxGa1-xN QW in the AlyGa1-yN matrix than that in the AlN matrix. We also point out that further reduction of point defects is crucial to achieve an even higher emission efficiency.

Scanning gate imaging of two coupled quantum dots in single-walled carbon nanotubes.

PubMed

Zhou, Xin; Hedberg, James; Miyahara, Yoichi; Grutter, Peter; Ishibashi, Koji

2014-12-12

Two coupled single wall carbon nanotube quantum dots in a multiple quantum dot system were characterized by using a low temperature scanning gate microscopy (SGM) technique, at a temperature of 170 mK. The locations of single wall carbon nanotube quantum dots were identified by taking the conductance images of a single wall carbon nanotube contacted by two metallic electrodes. The single electron transport through single wall carbon nanotube multiple quantum dots has been observed by varying either the position or voltage bias of a conductive atomic force microscopy tip. Clear hexagonal patterns were observed in the region of the conductance images where only two sets of overlapping conductance rings are visible. The values of coupling capacitance over the total capacitance of the two dots, C(m)/C(1(2)) have been extracted to be 0.21 ∼ 0.27 and 0.23 ∼ 0.28, respectively. In addition, the interdot coupling (conductance peak splitting) has also been confirmed in both conductance image measurement and current-voltage curves. The results show that a SGM technique enables spectroscopic investigation of coupled quantum dots even in the presence of unexpected multiple quantum dots.

Ubiquity of quantum zero-point fluctuations in dislocation glide

NASA Astrophysics Data System (ADS)

Landeiro Dos Reis, Marie; Choudhury, Anshuman; Proville, Laurent

2017-03-01

Modeling the dislocation glide through atomic scale simulations in Al, Cu, and Ni and in solid solution alloys Al(Mg) and Cu(Ag), we show that in the course of the plastic deformation the variation of the crystal zero-point energy (ZPE) and the dislocation potential energy barriers are of opposite sign. The multiplicity of situations where we have observed the same trend allows us to conclude that quantum fluctuations, giving rise to the crystal ZPE, make easier the dislocation glide in most materials, even those constituted of atoms heavier than H and He.

Engineering Photonic Devices and Materials Through Quantum Confinement and Electromagnetic Design

DTIC Science & Technology

2010-12-20

selectivity based on the Al concentration in AlGaAs films [27]. Preliminary calibration has demonstrated that a 4:1 ratio of citric acid to hydrogen...positioning the mode near 800 nm. We first simulated the reflectance of the proposed device in a passive FDTD simulation by introducing a Gaussian pulse... passively , enabling us to measure much higher quality factors than was possible using our spectrometer. The passive measurements were conducted by

Doping dependent blue shift and linewidth broadening of intersubband absorption in non-polar m-plane AlGaN/GaN multiple quantum wells

DOE Office of Scientific and Technical Information (OSTI.GOV)

Kotani, Teruhisa, E-mail: tkotani@iis.u-tokyo.ac.jp; Institute of Industrial Science, The University of Tokyo, 4-6-1 Komaba, Meguro-ku, Tokyo 153-8505; Advanced Technology Research Laboratories, Sharp Corporation, 2613-1 Ichinomoto-cho, Tenri, Nara 632-8567

2015-09-14

Blue shift and broadening of the absorption spectra of mid-infrared intersubband transition in non-polar m-plane AlGaN/GaN 10 quantum wells were observed with increasing doping density. As the doping density was increased from 6.6 × 10{sup 11} to 6.0 × 10{sup 12 }cm{sup −2} per a quantum well, the intersubband absorption peak energy shifted from 274.0 meV to 302.9 meV, and the full width at half maximum increased from 56.4 meV to 112.4 meV. Theoretical calculations reveal that the blue shift is due to many body effects, and the intersubband linewidth in doped AlGaN/GaN QW is mainly determined by scattering due to interface roughness, LO phonons, and ionized impurities.

Integrating AlInN interlayers into InGaN/GaN multiple quantum wells for enhanced green emission

NASA Astrophysics Data System (ADS)

Sun, Wei; Al Muyeed, Syed Ahmed; Song, Renbo; Wierer, Jonathan J.; Tansu, Nelson

2018-05-01

Significant enhancement in green emission by integrating a thin AlInN barrier layer, or interlayer (IL), in an InGaN/GaN multiple quantum well (MQW) is demonstrated. The MQWs investigated here contains 5 periods of an InGaN QW, a 1 nm thick AlInN IL, and a 10 nm thick GaN barrier grown by metalorganic chemical vapor deposition. To accommodate the optimum low-pressure (20 Torr) growth of the AlInN layer a growth flow sequence with changing pressure is devised. The AlInN IL MQWs are compared to InGaN/AlGaN/GaN MQWs (AlGaN IL MQWs) and conventional InGaN/GaN MQWs. The AlInN IL MQWs provide benefits that are similar to AlGaN ILs, by aiding in the formation of abrupt heterointerfaces as indicated by X-ray diffraction omega-2theta (ω-2θ) scans, and also efficiency improvements due to high temperature annealing schedules during barrier growth. Room temperature photoluminescence of the MQW with AlInN ILs shows similar performance to MQWs with AlGaN ILs, and ˜4-7 times larger radiative efficiency (pump intensity dependent) at green wavelengths than conventional InGaN/GaN MQWs. This study shows the InGaN-based MQWs with AlInN ILs are capable of achieving superior performance to conventional InGaN MQWs emitting at green wavelengths.

Experimental Verification of Multiple-input Multiple Output (MIMO) Beamforming Capabilities Using a Time-division Coherent MIMO Radar

DTIC Science & Technology

2015-04-01

Measurement of radiative and nonradiative recombination rates in InGaAsP and AlGaAs light sources’, IEEE J. Quantum Electron., 1984, QE-20, (8), pp. 838–854 ELECTRONICS LETTERS 16th September 2004 Vol. 40 No. 19

Double-quantum homonuclear correlations of spin I=5/2 nuclei.

PubMed

Iuga, Dinu

2011-02-01

The challenges associated with acquiring double-quantum homonuclear Nuclear Magnetic Resonance correlation spectra of half-integer quadrupolar nuclei are described. In these experiments the radio-frequency irradiation amplitude is necessarily weak in order to selectively excite the central transition. In this limit only one out of the 25 double-quantum coherences possible for two coupled spin I=5/2 nuclei is excited. An investigation of all the 25 two spins double quantum transitions reveals interesting effects such as a compensation of the first-order quadrupolar interaction between the two single quantum transitions involved in the double quantum coherence. In this paper a full numerical study of a hypothetical two spin I=5/2 system is used to show what happens when the RF amplitude during recoupling is increased. In principle this is advantageous, since the required double quantum coherence should build up faster, but in practice it also induces adiabatic passage transfer of population and coherence which impedes any build up. Finally an optimized rotary resonance recoupling (oR(3)) sequence is introduced in order to decrease these transfers. This sequence consists of a spin locking irradiation whose amplitude is reduced four times during one rotor period, and allows higher RF powers to be used during recoupling. The sequence is used to measure (27)Al DQ dipolar correlation spectra of Y(3)Al(5)O(12) (YAG) and gamma alumina (γAl(2)O(3)). The results prove that aluminium vacancies in gamma alumina mainly occur in the tetrahedral sites. Copyright © 2010 Elsevier Inc. All rights reserved.

Development of aluminum gallium nitride based optoelectronic devices operating in deep UV and terahertz spectrum ranges

NASA Astrophysics Data System (ADS)

Zhang, Wei

In this research project I have investigated AlGaN alloys and their quantum structures for applications in deep UV and terahertz optoelectronic devices. For the deep UV emitter applications the materials and devices were grown by rf plasma-assisted molecular beam epitaxy on 4H-SiC, 6H-SiC and c-plane sapphire substrates. In the growth of AlGaN/AlN multiple quantum wells on SiC substrates, the AlGaN wells were grown under excess Ga, far beyond than what is required for the growth of stoichiometric AlGaN films, which resulted in liquid phase epitaxy growth mode. Due to the statistical variations of the excess Ga on the growth front we found that this growth mode leads to films with lateral variations in the composition and thus, band structure potential fluctuations. Transmission electron microscopy shows that the wells in such structures are not homogeneous but have the appearance of quantum dots. We find by temperature dependent photoluminescence measurements that the multiple quantum wells with band structure potential fluctuations emit at 240 nm and have room temperature internal quantum efficiency as high as 68%. Furthermore, they were found to have a maximum net modal optical gain of 118 cm-1 at a transparency threshold corresponding to 1.4 x 1017 cm-3 excited carriers. We attribute this low transparency threshold to population inversion of only the regions of the potential fluctuations rather than of the entire matrix. Some prototype deep UV emitting LED structures were also grown by the same method on sapphire substrates. Optoelectronic devices for terahertz light emission and detection, based on intersubband transitions in III-nitride semiconductor quantum wells, were grown on single crystal c-plane GaN substrates. Growth conditions such the ratio of group III to active nitrogen fluxes, which determines the appropriate Ga-coverage for atomically smooth growth without requiring growth interruptions were employed. Emitters designed in the quantum cascade structure were fabricated into mesa-structure devices and the I-V characterization at 20 K indicates sequential tunneling with electroluminescence emission at about 10 THz. Similarly, Far-infrared photoconductive detectors were grown by the same method. Photocurrent spectra centered at 23 mum (13 THz) are resolved up to 50 K, with responsivity of approximately 7 mA/W.

Topical Meeting on Picosecond Electronics and Optoelectronics

DTIC Science & Technology

1987-10-10

Gee, G. D Thurmond, H. W 8-00 AM (Invited Paper) Yen, Hughes Research Laboratories Design and fabrica- FA1 High-Speed Phenomena In GaAs Quantum Wells...D.H. Auston, P.R. Smith, J.C. Bean, J.P. Harbison, and D. Kaplan , "Picosecond Photoconciuctivity in Amorphous Silicon," in Picosecond Phenomena 1980... FA1 -4 QUANTUM-WELL PHYSICS AND DEVICES C. Weisbuch, Thomson CSF, Presider IA 155 , ,Ii : Al-1 High-Speed Phenomena in GaAs Multiple-Quantum-Wells A

The NIST 27 Al+ quantum-logic clock

NASA Astrophysics Data System (ADS)

Leibrandt, David; Brewer, Samuel; Chen, Jwo-Sy; Hume, David; Hankin, Aaron; Huang, Yao; Chou, Chin-Wen; Rosenband, Till; Wineland, David

2016-05-01

Optical atomic clocks based on quantum-logic spectroscopy of the 1 S0 <--> 3 P0 transition in 27 Al+ have reached a systematic fractional frequency uncertainty of 8 . 0 ×10-18 , enabling table-top tests of fundamental physics as well as measurements of gravitational potential differences. Currently, the largest limitations to the accuracy are second order time dilation shifts due to the driven motion (i.e., micromotion) and thermal motion of the trapped ions. In order to suppress these shifts, we have designed and built new ion traps based on gold-plated, laser-machined diamond wafers with differential RF drive, and we have operated one of our clocks with the ions laser cooled to near the six mode motional ground state. We present a characterization of the time dilation shifts in the new traps with uncertainties near 1 ×10-18 . Furthermore, we describe a new protocol for clock comparison measurements based on synchronous probing of the two clocks using phase-locked local oscillators, which allows for probe times longer than the laser coherence time and avoids the Dick effect. This work is supported by ARO, DARPA, and ONR.

Multiple exciton generation for photoelectrochemical hydrogen evolution reactions with quantum yields exceeding 100%

DOE PAGES

Yan, Yong; Crisp, Ryan W.; Gu, Jing; ...

2017-04-03

Multiple exciton generation (MEG) in quantum dots (QDs) has the potential to greatly increase the power conversion efficiency in solar cells and in solar-fuel production. During the MEG process, two electron-hole pairs (excitons) are created from the absorption of one high-energy photon, bypassing hot-carrier cooling via phonon emission. Here we demonstrate that extra carriers produced via MEG can be used to drive a chemical reaction with quantum efficiency above 100%. We developed a lead sulfide (PbS) QD photoelectrochemical cell that is able to drive hydrogen evolution from aqueous Na 2S solution with a peak external quantum efficiency exceeding 100%. QDmore » photoelectrodes that were measured all demonstrated MEG when the incident photon energy was larger than 2.7 times the bandgap energy. Finally, our results demonstrate a new direction in exploring high-efficiency approaches to solar fuels.« less

Nonlinear absorption properties of AlGaAs/GaAs multiple quantum wells grown by metalorganic chemical vapor deposition

NASA Technical Reports Server (NTRS)

Lee, Hsing-Chung; Kost, A.; Kawase, M.; Hariz, A.; Dapkus, P. Daniel

1988-01-01

The nonlinear absorption properties of the excitonic resonances associated with multiple quantum wells (MQWs) in AlGaAs/GaAs grown by metalorganic chemical vapor deposition are reported. The dependence of the saturation properties on growth parameters, especially growth temperature, and the well width are described. The minimum measured saturation intensity for these materials is 250 W/sq cm, the lowest reported value to date. The low saturation intensities are the result of excellent minority carrier properties. A systematic study of minority carrier lifetimes in quantum wells are reported. Lifetimes range from 50-350 ns depending on growth temperature and well width. When corrected for lateral diffusion effects and the measured minority carrier lifetime, the saturation data suggest that saturation intensities as low as 2.3 W/sq cm can be achieved in this system. The first measurements of the dependence of the exciton area and the magnitude of the excitonic absorption on well width are prsented. The growth of MQW structures on transparent GaP substrates is demonstrated and the electroabsorption properties of these structures are reviewed.

Quantum cascade light emitting diodes based on type-2 quantum wells

NASA Technical Reports Server (NTRS)

Lin, C. H.; Yang, R. Q.; Zhang, D.; Murry, S. J.; Pei, S. S.; Allerman, A. A.; Kurtz, S. R.

1997-01-01

The authors have demonstrated room-temperature CW operation of type-2 quantum cascade (QC) light emitting diodes at 4.2 (micro)m using InAs/InGaSb/InAlSb type-2 quantum wells. The type-2 QC configuration utilizes sequential multiple photon emissions in a staircase of coupled type-2 quantum wells. The device was grown by molecular beam epitaxy on a p-type GaSb substrate and was compared of 20 periods of active regions separated by digitally graded quantum well injection regions. The maximum average output power is about 250 (micro)W at 80 K, and 140 (micro)W at 300 K at a repetition rate of 1 kHz with a duty cycle of 50%.

Superposing pure quantum states with partial prior information

NASA Astrophysics Data System (ADS)

Dogra, Shruti; Thomas, George; Ghosh, Sibasish; Suter, Dieter

2018-05-01

The principle of superposition is an intriguing feature of quantum mechanics, which is regularly exploited in many different circumstances. A recent work [M. Oszmaniec et al., Phys. Rev. Lett. 116, 110403 (2016), 10.1103/PhysRevLett.116.110403] shows that the fundamentals of quantum mechanics restrict the process of superimposing two unknown pure states, even though it is possible to superimpose two quantum states with partial prior knowledge. The prior knowledge imposes geometrical constraints on the choice of input states. We discuss an experimentally feasible protocol to superimpose multiple pure states of a d -dimensional quantum system and carry out an explicit experimental realization for two single-qubit pure states with partial prior information on a two-qubit NMR quantum information processor.

The Strange (Hi)story of Particles and Waves

NASA Astrophysics Data System (ADS)

Zeh, H. Dieter

2016-03-01

This is an attempt of a non-technical but conceptually consistent presentation of quantum theory in a historical context. While the first part is written for a general readership, Section 5 may appear a bit provocative to some quantum physicists. I argue that the single-particle wave functions of quantum mechanics have to be correctly interpreted as field modes that are "occupied once" (i.e. first excited states of the corresponding quantum oscillators in the case of boson fields). Multiple excitations lead to apparent many-particle wave functions, while the quantum states proper are defined by wave function(al)s on the "configuration" space of fundamental fields, or on another, as yet elusive, fundamental local basis.

Demonstration of transverse-magnetic deep-ultraviolet stimulated emission from AlGaN multiple-quantum-well lasers grown on a sapphire substrate

DOE Office of Scientific and Technical Information (OSTI.GOV)

Li, Xiao-Hang, E-mail: xli@gatech.edu, E-mail: dupuis@gatech.edu; Kao, Tsung-Ting; Satter, Md. Mahbub

2015-01-26

We demonstrate transverse-magnetic (TM) dominant deep-ultraviolet (DUV) stimulated emission from photo-pumped AlGaN multiple-quantum-well lasers grown pseudomorphically on an AlN/sapphire template by means of photoluminescence at room temperature. The TM-dominant stimulated emission was observed at wavelengths of 239, 242, and 243 nm with low thresholds of 280, 250, and 290 kW/cm{sup 2}, respectively. In particular, the lasing wavelength of 239 nm is shorter compared to other reports for AlGaN lasers grown on foreign substrates including sapphire and SiC. The peak wavelength difference between the transverse-electric (TE)-polarized emission and TM-polarized emission was approximately zero for the lasers in this study, indicating the crossover of crystal-fieldmore » split-off hole and heavy-hole valence bands. The rapid variation of polarization between TE- and TM-dominance versus the change in lasing wavelength from 243 to 249 nm can be attributed to a dramatic change in the TE-to-TM gain coefficient ratio for the sapphire-based DUV lasers in the vicinity of TE-TM switch.« less

Landau levels and shallow donor states in GaAs/AlGaAs multiple quantum wells at megagauss magnetic fields

NASA Astrophysics Data System (ADS)

Zybert, M.; Marchewka, M.; Sheregii, E. M.; Rickel, D. G.; Betts, J. B.; Balakirev, F. F.; Gordon, M.; Stier, A. V.; Mielke, C. H.; Pfeffer, P.; Zawadzki, W.

2017-03-01

Landau levels and shallow donor states in multiple GaAs/AlGaAs quantum wells (MQWs) are investigated by means of the cyclotron resonance at megagauss magnetic fields. Measurements of magneto-optical transitions were performed in pulsed fields up to 140 T and temperatures from 6-300 K. The 14 ×14 P.p band model for GaAs is used to interpret free-electron transitions in a magnetic field. Temperature behavior of the observed resonant structure indicates, in addition to the free-electron Landau states, contributions of magnetodonor states in the GaAs wells and possibly in the AlGaAs barriers. The magnetodonor energies are calculated using a variational procedure suitable for high magnetic fields and accounting for conduction band nonparabolicity in GaAs. It is shown that the above states, including their spin splitting, allow one to interpret the observed magneto-optical transitions in MQWs in the middle infrared region. Our experimental and theoretical results at very high magnetic fields are consistent with the picture used previously for GaAs/AlGaAs MQWs at lower magnetic fields.

Limited Quantum Helium Transportation through Nano-channels by Quantum Fluctuation

PubMed Central

Ohba, Tomonori

2016-01-01

Helium at low temperatures has unique quantum properties such as superfluidity, which causes it to behave differently from a classical fluid. Despite our deep understanding of quantum mechanics, there are many open questions concerning the properties of quantum fluids in nanoscale systems. Herein, the quantum behavior of helium transportation through one-dimensional nanopores was evaluated by measuring the adsorption of quantum helium in the nanopores of single-walled carbon nanohorns and AlPO4-5 at 2–5 K. Quantum helium was transported unimpeded through nanopores larger than 0.7 nm in diameter, whereas quantum helium transportation was significantly restricted through 0.4-nm and 0.6-nm nanopores. Conversely, nitrogen molecules diffused through the 0.4-nm nanopores at 77 K. Therefore, quantum helium behaved as a fluid comprising atoms larger than 0.4–0.6 nm. This phenomenon was remarkable, considering that helium is the smallest existing element with a (classical) size of approximately 0.27 nm. This finding revealed the presence of significant quantum fluctuations. Quantum fluctuation determined the behaviors of quantum flux and is essential to understanding unique quantum behaviors in nanoscale systems. PMID:27363671

Photocurrent Cancellation Due to Barrier Asymmetry in GaAs/AlGaAs Heterostructure Infrared Detectors

DTIC Science & Technology

2014-05-01

with previous work published on QWIP current mechanisms. The Barrier Workfunction and Collection Efficiency give the relevant values obtained by using...infrared photodetectors ( QWIPs ,) multiple quantum well (MQW,) and superlattice structures. 15 2.5.1 Heterojunction Interfacial Workfunction Internal...for aluminum fractions of x = 0.28, 0.37, and 0.57, respectively. Similar results were found previously14 by Tsai et. al. in GaAs/AlGaAs QWIPs

Nano-scale luminescence characterization of individual InGaN/GaN quantum wells stacked in a microcavity using scanning transmission electron microscope cathodoluminescence

DOE Office of Scientific and Technical Information (OSTI.GOV)

Schmidt, Gordon, E-mail: Gordon.Schmidt@ovgu.de; Müller, Marcus; Veit, Peter

2014-07-21

Using cathodoluminescence spectroscopy directly performed in a scanning transmission electron microscope at liquid helium temperatures, the optical and structural properties of a 62 InGaN/GaN multiple quantum well embedded in an AlInN/GaN based microcavity are investigated at the nanometer scale. We are able to spatially resolve a spectral redshift between the individual quantum wells towards the surface. Cathodoluminescence spectral linescans allow directly visualizing the critical layer thickness in the quantum well stack resulting in the onset of plastic relaxation of the strained InGaN/GaN system.

Excitonic lasing of strain-free InP(As) quantum dots in AlInAs microdisk

NASA Astrophysics Data System (ADS)

Lebedev, D. V.; Kulagina, M. M.; Troshkov, S. I.; Vlasov, A. S.; Davydov, V. Y.; Smirnov, A. N.; Bogdanov, A. A.; Merz, J. L.; Kapaldo, J.; Gocalinska, A.; Juska, G.; Moroni, S. T.; Pelucchi, E.; Barettin, D.; Rouvimov, S.; Mintairov, A. M.

2017-03-01

Formation, emission, and lasing properties of strain-free InP(As)/AlInAs quantum dots (QDs) embedded in AlInAs microdisk (MD) cavity were investigated using transmission electron microscopy and photoluminescence (PL) techniques. In MD structures, the QDs have the nano-pan-cake shape with the height of ˜2 nm, the lateral size of 20-50 nm, and the density of ˜5 × 109 cm-2. Their emission observed at ˜940 nm revealed strong temperature quenching, which points to exciton decomposition. It also showed unexpected type-I character, indicating In-As intermixing as confirmed by band structure calculations. We observed lasing of InP(As) QD excitons into whispering gallery modes in MD having the diameter of ˜3.2 μm and providing a free spectral range of ˜27 nm and quality factors up to Q˜13 000. Threshold of ˜50 W/cm2 and spontaneous emission coupling coefficient of ˜0.2 were measured for this MD-QD system.

Mapping of Gene Expression Reveals CYP27A1 as a Susceptibility Gene for Sporadic ALS

PubMed Central

van Rheenen, Wouter; Franke, Lude; Jansen, Ritsert C.; van Es, Michael A.; van Vught, Paul W. J.; Blauw, Hylke M.; Groen, Ewout J. N.; Horvath, Steve; Estrada, Karol; Rivadeneira, Fernando; Hofman, Albert; Uitterlinden, Andre G.; Robberecht, Wim; Andersen, Peter M.; Melki, Judith; Meininger, Vincent; Hardiman, Orla; Landers, John E.; Brown, Robert H.; Shatunov, Aleksey; Shaw, Christopher E.; Leigh, P. Nigel; Al-Chalabi, Ammar; Ophoff, Roel A.

2012-01-01

Amyotrophic lateral sclerosis (ALS) is a progressive, neurodegenerative disease characterized by loss of upper and lower motor neurons. ALS is considered to be a complex trait and genome-wide association studies (GWAS) have implicated a few susceptibility loci. However, many more causal loci remain to be discovered. Since it has been shown that genetic variants associated with complex traits are more likely to be eQTLs than frequency-matched variants from GWAS platforms, we conducted a two-stage genome-wide screening for eQTLs associated with ALS. In addition, we applied an eQTL analysis to finemap association loci. Expression profiles using peripheral blood of 323 sporadic ALS patients and 413 controls were mapped to genome-wide genotyping data. Subsequently, data from a two-stage GWAS (3,568 patients and 10,163 controls) were used to prioritize eQTLs identified in the first stage (162 ALS, 207 controls). These prioritized eQTLs were carried forward to the second sample with both gene-expression and genotyping data (161 ALS, 206 controls). Replicated eQTL SNPs were then tested for association in the second-stage GWAS data to find SNPs associated with disease, that survived correction for multiple testing. We thus identified twelve cis eQTLs with nominally significant associations in the second-stage GWAS data. Eight SNP-transcript pairs of highest significance (lowest p = 1.27×10−51) withstood multiple-testing correction in the second stage and modulated CYP27A1 gene expression. Additionally, we show that C9orf72 appears to be the only gene in the 9p21.2 locus that is regulated in cis, showing the potential of this approach in identifying causative genes in association loci in ALS. This study has identified candidate genes for sporadic ALS, most notably CYP27A1. Mutations in CYP27A1 are causal to cerebrotendinous xanthomatosis which can present as a clinical mimic of ALS with progressive upper motor neuron loss, making it a plausible susceptibility gene for ALS. PMID:22509407

22 W coherent GaAlAs amplifier array with 400 emitters

NASA Technical Reports Server (NTRS)

Krebs, D.; Herrick, R.; No, K.; Harting, W.; Struemph, F.

1991-01-01

Greater than 22 W of optical power has been demonstrated from a multiple-emitter, traveling-wave semiconductor amplifier, with approximately 87 percent of the output at the frequency of the injection source. The device integrates, in AlGaAs graded-index separate-confinement heterostructure single quantum well (GRINSCH-SQW) epitaxy, 400 ridge waveguide amplifiers with a coherent optical signal distribution circuit on a 12 x 6 mm chip.

Quantum spin chains with multiple dynamics

NASA Astrophysics Data System (ADS)

Chen, Xiao; Fradkin, Eduardo; Witczak-Krempa, William

2017-11-01

Many-body systems with multiple emergent time scales arise in various contexts, including classical critical systems, correlated quantum materials, and ultracold atoms. We investigate such nontrivial quantum dynamics in a different setting: a spin-1 bilinear-biquadratic chain. It has a solvable entangled ground state, but a gapless excitation spectrum that is poorly understood. By using large-scale density matrix renormalization group simulations, we find that the lowest excitations have a dynamical exponent z that varies from 2 to 3.2 as we vary a coupling in the Hamiltonian. We find an additional gapless mode with a continuously varying exponent 2 ≤z <2.7 , which establishes the presence of multiple dynamics. In order to explain these striking properties, we construct a continuum wave function for the ground state, which correctly describes the correlations and entanglement properties. We also give a continuum parent Hamiltonian, but show that additional ingredients are needed to capture the excitations of the chain. By using an exact mapping to the nonequilibrium dynamics of a classical spin chain, we find that the large dynamical exponent is due to subdiffusive spin motion. Finally, we discuss the connections to other spin chains and to a family of quantum critical models in two dimensions.

Inclined dislocation arrays in AlGaN/AlGaN quantum well structures emitting at 290 nm

NASA Astrophysics Data System (ADS)

Chang, T. Y.; Moram, M. A.; McAleese, C.; Kappers, M. J.; Humphreys, C. J.

2010-12-01

We report on the structural and optical properties of deep ultraviolet emitting AlGaN/AlGaN multiple quantum wells (MQWs) grown on (0001) sapphire by metal-organic vapor phase epitaxy using two different buffer layer structures, one containing a thin (1 μm) AlN layer combined with a GaN interlayer and the other a thick (4 μm) AlN layer. Transmission electron microscopy analysis of both structures showed inclined arrays of dislocations running through the AlGaN layers at an angle of ˜30°, originating at bunched steps at the AlN surface and terminating at bunched steps at the surface of the MQW structure. In all layers, these inclined dislocation arrays are surrounded by AlGaN with a relatively higher Ga content, consistent with plan-view cathodoluminescence maps in which the bunched surface steps are associated with longer emission wavelengths. The structure with the 4 μm-thick AlN buffer layer had a dislocation density lower by a factor of 2 (at (1.7±0.1)×109 cm-2) compared to the structure with the 1 μm thick AlN buffer layer, despite the presence of the inclined dislocation arrays.

Gain properties of doped GaAs/AlGaAs multiple quantum well avalanche photodiode structures

NASA Technical Reports Server (NTRS)

Menkara, H. M.; Wagner, B. K.; Summers, C. J.

1995-01-01

A comprehensive characterization has been made of the static and dynamical response of conventional and multiple quantum well (MQW) avalanche photodiodes (APDs). Comparison of the gain characteristics at low voltages between the MQW and conventional APDs show a direct experimental confirmation of a structure-induced carrier multiplication due to interband impact ionization. Similar studies of the bias dependence of the excess noise characteristics show that the low-voltage gain is primarily due to electron ionization in the MQW-APDS, and to both electron and hole ionization in the conventional APDS. For the doped MQW APDS, the average gain per stage was calculated by comparing gain data with carrier profile measurements, and was found to vary from 1.03 at low bias to 1.09 near avalanche breakdown.

Realizing Controllable Quantum States

NASA Astrophysics Data System (ADS)

Takayanagi, Hideaki; Nitta, Junsaku

1. Entanglement in solid states. Orbital entanglement and violation of bell inequalities in mesoscopic conductors / M. Büttiker, P. Samuelsson and E. V. Sukhoruk. Teleportation of electron spins with normal and superconducting dots / O. Sauret, D. Feinberg and T. Martin. Entangled state analysis for one-dimensional quantum spin system: singularity at critical point / A. Kawaguchi and K. Shimizu. Detecting crossed Andreev reflection by cross-current correlations / G. Bignon et al. Current correlations and transmission probabilities for a Y-shaped diffusive conductor / S. K. Yip -- 2. Mesoscopic electronics. Quantum bistability, structural transformation, and spontaneous persistent currents in mesoscopic Aharonov-Bohm loops / I. O. Kulik. Many-body effects on tunneling of electrons in magnetic-field-induced quasi one-dimensional systems in quantum wells / T. Kubo and Y. Tokura. Electron transport in 2DEG narrow channel under gradient magnetic field / M. Hara et al. Transport properties of a quantum wire with a side-coupled quantum dot / M. Yamaguchi et al. Photoconductivity- and magneto-transport studies of single InAs quantum wires / A. Wirthmann et al. Thermoelectric transports in charge-density-wave systems / H. Yoshimoto and S. Kurihara -- 3. Mesoscopic superconductivity. Parity-restricted persistent currents in SNS nanorings / A. D. Zaikin and S. V. Sharov. Large energy dependence of current noise in superconductingh/normal metal junctions / F. Pistolesi and M. Houzet. Generation of photon number states and their superpositions using a superconducting qubit in a microcavity / Yu-Xi Liu, L. F. Wei and F. Nori. Andreev interferometry for pumped currents / F. Taddei, M. Governale and R. Fazio. Suppression of Cooper-pair breaking against high magnetic fields in carbon nanotubes / J. Haruyama et al. Impact of the transport supercurrent on the Josephson effect / S. N. Shevchenko. Josephson current through spin-polarized Luttinger liquid / N. Yokoshi and S. Kurihara -- 4. Mesoscopic superconductivity with unconventional superconductor or ferromagnet. Ultraefficient microrefrigerators realized with ferromagnet-superconductor junctions / F. Giazotto et al. Anomalous charge transport in triplet superconductor junctions by the synergy effect of the proximity effect and the mid gap Andreev resonant states / Y. Tanaka and S. Kashiwaya. Paramagnetic and glass states in superconductive YBa[symbol]Cu[symbol]O[symbol] ceramics of sub-micron scale grains / H. Deguchi et al. Quantum properties of single-domain triplet superconductors / A. M. Gulian and K. S. Wood. A numerical study of Josephson current in p wave superconducting junctions / Y. Asano et al. Tilted bi-crystal sapphire substrates improve properties of grain boundary YBa[symbol]Cu[symbol]O[symbol] junctions and extend their Josephson response to THZ frequencies / E. Stepantsov et al. Circuit theory analysis of AB-plane tunnel junctions of unconventional superconductor Bi[symbol]Sr[symbol]Ca[symbol]Cu[symbol]O[symbol] / I. Shigeta et al. Transport properties of normal metal/anisotropic superconductor junctions in the eutectic system Sr[symbol]RuO[symbol]Ru / M. Kawamura et al. Macroscopic quantum tunneling in d-wave superconductor Josephson / S. Kawabata et al. Quasiparticle states of high-T[symbol] oxides observed by a Zeeman magnetic field response / S. Kashiwaya et al. Experimentally realizable devices for controlling the motion of magnetic flux quanta in anisotropic superconductors: vortex lenses, vortex diodes and vortex pumps / S. Savel'ev and F. Nori. Stability of vortex-antivortex "molecules" in mesoscopic superconducting triangles / V. R. Misko et al. Superconducting network with magnetic decoration - Hofstadter butterfly in spatially modulated magnetic field / Y. Iye et al. Observation of paramagnetic supercurrent in mesoscopic superconducting rings and disks using multiple-small-tunnel-junction method / A. Kanda et al. Guidance of vortices in high-T[stmbol] superconducting thin films with special arrangements of antidots / R. Wöerdenweber, P. Dymashevski and V. R. Misko. Quantum tunneling of relativistic fluxons / K. Konno et al. -- 6. Quantum information processing in solid states. Qubit decoherence by low-frequency noise / K. Rabenstein, V. A. Sverdlov and D. V. Averin. A critique of two-level approximation / K. Savran and T. Hakioǧlu. Josephson arrays as quantum channels / A. Romito, C. Bruder and R. Fazio. Fighting decoherence in a Josephson qubit circuit / E. Collin et al. Fast switching current detection at low critical currents / J. Walter, S. Corlevi and D. Haviland. Asymmetric flux bias for coupled qubits to observe entangled states / Y. Shimazu. Interaction of Josephson qubits with strong QED cavity modes: dynamical entanglement transfer and navigation / G. Falci et al. Controlling decoherence of transported quantum spin information in semiconductor spintronics / B. Nikolic and S. Souma. Decoherence due to telegraph and 1/f noise in Josephson qubits / E. Paladino et al. Detection of entanglement in NMR quantum information processing / R. Rahimi, K. Takeda and M. Kitagawa. Multiphoton absorption and SQUID switching current behaviors in superconducting flux-qubit experiments / H. Takayanagi et al. -- 7. Quantum information theory. Quantum query complexities / K. Iwama. A construction for non-stabilizer Clifford codes / M. Hagiwara and H. Imai. Quantum pushdown automata that can deterministically solve a certain problem / Y. Murakami et al. Trading classical for quantum computation using indirection / R. van Meter. Intractability of the initial arrangement of input data on qubits / Y. Kawano et al. Reversibility of modular squaring / N. Kunihiro, Y. Takahashi and Y. Kawano. Study of proximity effect at D-wave superconductors in quasiclassical methods / Y. Tanuma, Y. Tanaka and S. Kashiwaya -- 8. Spintronics in band electrons. Triplet superconductors: exploitable basis for scalable quantum computing / K. S. Wood et al. Spin excitations in low-dimensional electron gases studied by far-infrared photoconductivity spectroscopy / C.-M. Hu. Control of photogenerated carriers and spins using surface acoustic waves / P. V. Santos, J. A. H. Stotz and R. Hey. PbTe nanostructures for spin filtering and detecting / G. Grabecki. G-factor control in an Ids-inserted InGaAs/InAlAs heterostructure / J. Nitta et al. Spin hall effect in p-type semiconductors / S. Murakami. Spin diffusion in mesoscopic superconducting A1 wires / Y.-S. Shin. H.-J. Lee and H.-W. Lee. Magnetization processes revealed by in-plane DC magnetoresistance measurements on manganite bicrystal thin film devices / R. Gunnarsson. M. Hanson and T. Claeson. Giant magnetoconductance at interface between a two-dimensional hole system and a magnetic semiconductor (Ga, Mn)As / Y. Hashimoto, S. Katsumoto and Y. Iye. Diffusion modes of the transport in diluted magnetic semiconductors / I. Kanazawa. Effect of an invasive voltage probe on the spin polarized current / J. Ohe and T. Ohtsuki -- 9. Spintronics in quantum dots. Tunable exchange interaction and Kondo screening in quantum dot devices / H. Tamura et al. Kondo effect in quantum dots in presence of itinerant-electron magnetism / J. Martinek et al. Optical band edge of II-VI and III-V based diluted magnetic semiconductors / M. Takahashi. Spin-polarized transport properties through double quantum dots / Y. Tanaka and N. Kawakami. RKKY interaction between two quantum dots embedded in an Aharonov-Bohm ring / Y. Utsumi et al. Fabrication and characterization of quantum dot single electron spin resonance devices / T. Kodera et al. Kondo effect in quantum dots with two orbitals and spin 1/2 - crossover from SU (4) to SU (2) symmetry / M. Eto. Detecting spin polarization of electrons in quantum dot edge channels by photoluminescence / S. Nomura. Manipulation of exchange interaction in a double quantum dot / M. Stopa, S. Tarucha and T. Hatano. Electron-density dependence of photoluminescence from Be-[symbol]-doped GaAs quantum wells with a back gate / M. Yamaguchi et al. Direct observation of [symbol]Si nuclear-spin decoherence process / S. Sasaki and S. Watanabe.

Fabrication of GaAs/Al0.3Ga0.7As multiple quantum well nanostructures on (100) si substrate using a 1-nm InAs relief layer.

PubMed

Oh, H J; Park, S J; Lim, J Y; Cho, N K; Song, J D; Lee, W; Lee, Y J; Myoung, J M; Choi, W J

2014-04-01

Nanometer scale thin InAs layer has been incorporated between Si (100) substrate and GaAs/Al0.3Ga0.7As multiple quantum well (MQW) nanostructure in order to reduce the defects generation during the growth of GaAs buffer layer on Si substrate. Observations based on atomic force microscopy (AFM) and transmission electron microscopy (TEM) suggest that initiation and propagation of defect at the Si/GaAs interface could be suppressed by incorporating thin (1 nm in thickness) InAs layer. Consequently, the microstructure and resulting optical properties improved as compared to the MQW structure formed directly on Si substrate without the InAs layer. It was also observed that there exists some limit to the desirable thickness of the InAs layer since the MQW structure having thicker InAs layer (4 nm-thick) showed deteriorated properties.

Reliability assessment of multiple quantum well avalanche photodiodes

NASA Technical Reports Server (NTRS)

Yun, Ilgu; Menkara, Hicham M.; Wang, Yang; Oguzman, Isamil H.; Kolnik, Jan; Brennan, Kevin F.; May, Gray S.; Wagner, Brent K.; Summers, Christopher J.

1995-01-01

The reliability of doped-barrier AlGaAs/GsAs multi-quantum well avalanche photodiodes fabricated by molecular beam epitaxy is investigated via accelerated life tests. Dark current and breakdown voltage were the parameters monitored. The activation energy of the degradation mechanism and median device lifetime were determined. Device failure probability as a function of time was computed using the lognormal model. Analysis using the electron beam induced current method revealed the degradation to be caused by ionic impurities or contamination in the passivation layer.

Terahertz Quantum Cascade Laser With Efficient Coupling and Beam Profile

NASA Technical Reports Server (NTRS)

Chattopadhyay, Goutam; Kawamura, Jonathan H.; Lin, Robert H.; Williams, Benjamin

2012-01-01

Quantum cascade lasers (QCLs) are unipolar semiconductor lasers, where the wavelength of emitted radiation is determined by the engineering of quantum states within the conduction band in coupled multiple-quantum-well heterostructures to have the desired energy separation. The recent development of terahertz QCLs has provided a new generation of solid-state sources for radiation in the terahertz frequency range. Terahertz QCLs have been demonstrated from 0.84 to 5.0 THz both in pulsed mode and continuous wave mode (CW mode). The approach employs a resonant-phonon depopulation concept. The metal-metal (MM) waveguide fabrication is performed using Cu-Cu thermo-compression bonding to bond the GaAs/AlGaAs epitaxial layer to a GaAs receptor wafer.

Multinuclear (27Al, 29Si, 47,49Ti) solid-state NMR of titanium substituted zeolite USY.

PubMed

Ganapathy, S; Gore, K U; Kumar, Rajiv; Amoureux, Jean-Paul

2003-01-01

Multinuclear solid-state NMR spectroscopy, employing 29Si MAS,27Al MAS/3Q-MAS and (47,49)Ti wide-line experiments, has been used for the structural characterization of titanium substituted ultra-stable zeolite Y (Ti-USY). 27Al MAS experiments show the presence of aluminum in four (Al(IV)), five (Al(V)), and six (Al(VI)) coordination, whereas the multiplicity within Al(IV) and Al(VI) is revealed by 27Al 3Q-MAS experiments. Two different tetrahedral and octahedral Al environments are resolved and their isotropic chemical shifts (delta(CS)) and second-order quadrupole interaction parameters (P(Q)) have been determined by a graphical analysis of the 3Q-MAS spectra. The emergence of signal with higher intensity at -101 ppm in the 29Si MAS spectrum of Ti-USY samples indicates the possible occurrence of Q4(3Si,1Ti) type silicon environments due to titanium substitution in the faujasite framework. High-field (11.74T) operation, using a probehead specially designed to handle a large sample volume, has enabled the acquisition of 47,49Ti static spectra and identification of the titanium environment in the zeolite. The chemical shielding and electric field gradient tensors for the titanium environment in the zeolite have been determined by a computer simulation of the quadrupolar broadened static 47,49Ti NMR spectra.

The human homolog of S. cerevisiae CDC27, CDC27 Hs, is encoded by a highly conserved intronless gene present in multiple copies in the human genome

DOE Office of Scientific and Technical Information (OSTI.GOV)

Devor, E.J.; Dill-Devor, R.M.

1994-09-01

We have obtained a number of unique sequences via PCR amplification of human genomic DNA using degenerate primers under low stringency (42{degrees}C). One of these, an 853 bp product, has been identified as a partial genomic sequence of the human homolog of the S. cerevisiae CDC27 gene, CDC27Hs (GenBank No. U00001). This gene, reported by Turgendreich et al. is also designated EST00556 from Adams et al. We have undertaken a more detailed examination of our sequence, MCP34N, and have found that: 1. the genomic sequence is nearly identical to CDC27Hs over its entire 853 bp length; 2. an MCP34N-specific PCRmore » assay of several non-human primate species reveals amplification products in chimpanzee and gorilla genomes having greater than 90% sequence identity with CDC27Hs; and 3. an MCP34N-specific PCR assay of the BIOS hybrid cell line panel gives a discordancy pattern suggesting multiple loci. Based upon these data, we present the following initial characterization: 1. the complete MCP34N sequence identity with CDC27Hs indicates that the latter is encoded by an intronless gene; 2. CDC27Hs is highly conserved among higher primates; and 3. CDC27Hs is present in multiple copies in the human genome. These characteristics, taken together with those initially reported for CDC27Hs, suggest that this is an old gene that carries out an important but, as yet, unknown function in the human brain.« less

Characterization of the absorbance bleaching in AllnAs/AlGaInAs multiple-quantum wells for semiconductor saturable absorbers.

DOE Office of Scientific and Technical Information (OSTI.GOV)

Wanke, Michael Clement; Cederberg, Jeffrey George; Alliman, Darrell L.

2010-05-01

Semiconductor saturable absorbers (SESAs) introduce loss into a solid-state laser cavity until the cavity field bleaches the absorber producing a high-energy pulse. Multiple quantum wells (MQWs) of AlGaInAs grown lattice-matched to InP have characteristics that make them attractive for SESAs. The band gap can be tuned around the target wavelength, 1064 nm, and the large conduction band offset relative to the AlInAs barrier material helps reduces the saturation fluence, and transparent substrate reduces nonsaturable losses. We have characterized the lifetime of the bleaching process, the modulation depth, the nonsaturable losses, and the saturation fluence associated with SESAs. We compare differentmore » growth conditions and structure designs. These parameters give insight into the quality of the epitaxy and effect structure design has on SESA performance in a laser cavity. AlGaInAs MQWs were grown by MOVPE using a Veeco D125 machine using methyl-substituted metal-organics and hydride sources at a growth temperature of 660 C at a pressure of 60 Torr. A single period of the basic SESA design consists of approximately 130 to 140 nm of AlInAs barrier followed by two AlGaInAs quantum wells separated by 10 nm AlInAs. This design places the QWs near the nodes of the 1064-nm laser cavity standing wave. Structures consisting of 10-, 20-, and 30-periods were grown and evaluated. The SESAs were measured at 1064 nm using an optical pump-probe technique. The absorbance bleaching lifetime varies from 160 to 300 nsec. The nonsaturable loss was as much as 50% for structures grown on n-type, sulfur-doped InP substrates, but was reduced to 16% when compensated, Fe-doped InP substrates were used. The modulation depth of the SESAs increased linearly from 9% to 30% with the number of periods. We are currently investigating how detuning the QW transition energy impacts the bleaching characteristics. We will discuss how each of these parameters impacts the laser performance.« less

The photosensitivity of carbon quantum dots/CuAlO2 films composites.

PubMed

Pan, Jiaqi; Sheng, Yingzhuo; Zhang, Jingxiang; Wei, Jumeng; Huang, Peng; Zhang, Xin; Feng, Boxue

2015-07-31

Carbon quantum dots/CuAlO2 films were prepared by a simple route through which CuAlO2 films prepared by sol-gel on crystal quartz substrates were composited with carbon quantum dots on their surface. The characterization results indicated that CuAlO2 films were well combined with carbon quantum dots. The photoconductivity of carbon quantum dots/CuAlO2 films was investigated under illumination and darkness switching, and was demonstrated to be significantly enhanced compared with CuAlO2 films. Through analysis, this enhancement of photoconductivity was attributed to the carbon quantum dots with unique up-converted photoluminescence behavior.

The photosensitivity of carbon quantum dots/CuAlO2 films composites

NASA Astrophysics Data System (ADS)

Pan, Jiaqi; Sheng, Yingzhuo; Zhang, Jingxiang; Wei, Jumeng; Huang, Peng; Zhang, Xin; Feng, Boxue

2015-07-01

Carbon quantum dots/CuAlO2 films were prepared by a simple route through which CuAlO2 films prepared by sol-gel on crystal quartz substrates were composited with carbon quantum dots on their surface. The characterization results indicated that CuAlO2 films were well combined with carbon quantum dots. The photoconductivity of carbon quantum dots/CuAlO2 films was investigated under illumination and darkness switching, and was demonstrated to be significantly enhanced compared with CuAlO2 films. Through analysis, this enhancement of photoconductivity was attributed to the carbon quantum dots with unique up-converted photoluminescence behavior.

Effect of particle size on phase transition among metastable alumina nanoparticles: A view from high resolution 2D solid-state 27Al NMR study

NASA Astrophysics Data System (ADS)

Kim, H.; Lee, S.

2012-12-01

The detailed knowledge of atomic structures of diverse metastable/stable polymorphs in alumina nanoparticles is essential to understand their macroscopic properties. Alumina undergoes successive phase transitions from metastable γ-, δ-, and θ-alumina to stable α-alumina depending on types of precursors, annealing duration, and temperature. As large surface area of nanoparticles plays an important role in controlling their phase transitions, it is also necessary to explore the effect of particle size on nature of phase transition. Solid-state ^{27}Al NMR allows us to determine the atomic structure of Al sites in diverse amorphous/disordered silicates including alumina. However, generally, the crystallographically distinct Al sites among alumina polymorphs were not fully resolved in ^{27}Al magic angle spinning (MAS) NMR spectrum without performing a simulation of overlapped peaks for Al sites of metastable alumina in the spectra. Unfortunately, the simulation of 27Al MAS NMR spectra for alumina nanoparticles cannot be achieved well due to unconfirmed NMR parameters for Al sites of γ- and δ-alumina. The recent progress in triple-quantum (3Q) MAS can provide the much higher resolution for crystallographically distinct Al sites in amorphous alumina (Lee et al., 2009, Phys. Rev. Lett., 103, 095501; Lee et al., 2010, J. Phys. Chem. C, 114, 13890-13894) and aluminosilicate glasses (Lee, 2011, Proc. Natl. Acad. Sci., 108, 6847-6852) as well as crystalline layer silicates (Lee and Weiss, 2008, Am. Mineral. 93, 1066-1071). In this study, we report the ^{27}Al 2D 3QMAS and 1D MAS NMR spectra for alumina nanoparticles with varying particle size (e.g., 15, 19, and 27 nm) and temperature with an aim to explore the atomic structure of alumina polymorphs and nature of their phase transition sequence. The ^{27}Al 2D 3QMAS spectra show the resolved crystallographically distinct ^{[6]}Al and ^{[4]}Al sites in (γ, δ)-, θ-, and α-alumina in nanoparticles consisting of random mixtures of γ-, δ-, and θ-alumina phases. The fraction of θ-alumina gradually increases up to 1473 K at the expense of decrease in (γ, δ)-alumina. Onset of formation of α-alumina from metastable alumina is observed above 1493 K. The successive simulation of ^{27}Al MAS NMR spectra also can be achieved by using the NMR parameters for the Al sites of (γ, δ)-alumina in following Czjzek model, which is applicable to a wide range of disordered materials including γ-alumina. The simulation result shows the phase transition of γ, δ → θ phase is more gradual with that of θ → α phase transitions. This can be attributed to the different structural disorder between metastable (i.e., γ, δ, θ) phases and α-alumina. The transition temperature for θ → α phases apparently increases with increasing size of nanoparticles, indicating a larger energy penalty for phase transition of alumina nanoparticles with a larger particle size. The structural information of alumina polymorphs and mechanistic details shown in the current study provide insights into nature of phase transition mechanisms for other nanoparticles ubiquitous in the earth.

On the Making of Quantum Chemistry in Germany

NASA Astrophysics Data System (ADS)

Karachalios, Andreas

During the 1990s several historians of science have studied the emergence of quantum chemistry as an autonomous discipline in different national contexts (Nye, 1993; Simões, 1993; Simões, forthcoming; Gavroglu and Simões, 1994; Karachalios, 1997a). Beyond these disciplinary studies, a number of contributions to special aspects of this theme have appeared (Schweber, 1990; Gavroglu, 1995; Simões and Gavroglu, 1997, 1999a,b; Schwarz et al., 1999). In this literature the birth of quantum chemistry has generally been associated with two dates: the 1927 paper of Walter Heitler and Fritz London and the year 1931 in which Linus Pauling and John Clarke Slater independently explained the tetrahedral orientation of the four bonds of the carbon atom. To these dates we might also add a third: in 1928 London published a paper, 'Zur Quantentheorie der homöopolaren Valenzzahlen' (London, 1928), in which he gave a quantum mechanical explanation of the classical chemical notion of valency. There he showed a relationship between the valency numbers and the spectroscopical multiplicity, namely that valency=multiplicity-1. This relation established a bridge between physical and chemical facts. Taken together, these developments constitute important events for the international development of quantum chemistry.

Al{sub x}Ga{sub 1-x}N-based back-illuminated solar-blind photodetectors with external quantum efficiency of 89%

DOE Office of Scientific and Technical Information (OSTI.GOV)

Cicek, E.; McClintock, R.; Cho, C. Y.

2013-11-04

We report on high performance Al{sub x}Ga{sub 1−x}N-based solar-blind ultraviolet photodetector (PD) array grown on sapphire substrate. First, high quality, crack-free AlN template layer is grown via metalorganic chemical vapor deposition. Then, we systematically optimized the device design and material doping through the growth and processing of multiple devices. After optimization, uniform and solar-blind operation is observed throughout the array; at the peak detection wavelength of 275 nm, 729 μm{sup 2} area PD showed unbiased peak external quantum efficiency and responsivity of ∼80% and ∼176 mA/W, respectively, increasing to 89% under 5 V of reverse bias. Taking the reflection loses into consideration,more » the internal quantum efficiency of these optimized PD can be estimated to be as high as ∼98%. The visible rejection ratio measured to be more than six orders of magnitude. Electrical measurements yielded a low-dark current density: <2 × 10{sup −9} A/cm{sup 2}, at 10 V of reverse bias.« less

DOE Office of Scientific and Technical Information (OSTI.GOV)

Demianowicz, Maciej; Horodecki, Pawel

We analyze different aspects of multiparty communication over quantum memoryless channels and generalize some of the key results known from bipartite channels to the multiparty scenario. In particular, we introduce multiparty versions of subspace and entanglement transmission fidelities. We also provide alternative, local, versions of fidelities and show their equivalence to the global ones in context of capacity regions defined. An equivalence of two different capacity notions with respect to two types of fidelities is proven. In analogy to the bipartite case it is shown, via sufficiency of isometric encoding theorem, that additional classical forward side channel does not increasemore » capacity region of any quantum channel with k senders and m receivers which represents a compact unit of general quantum networks theory. The result proves that recently provided capacity region of a multiple access channel [M. Horodecki et al., Nature 436, 673 (2005); J. Yard et al., e-print quant-ph/0501045], is optimal also in a scenario of an additional support of forward classical communication.« less

Electroreflectance spectra from multiple InGaN/GaN quantum wells in the nonuniform electric field of a p–n junction

DOE Office of Scientific and Technical Information (OSTI.GOV)

Avakyants, L. P.; Aslanyan, A. E.; Bokov, P. Yu., E-mail: pavel-bokov@physics.msu.ru

A line at E = 2.77 eV (with a width of Γ = 88 meV) related to interband transitions in the region of multiple quantum wells in the active region is detected in the electroreflectance spectra of the GaN/InGaN/AlGaN heterostructure. As the modulation bias is reduced from 2.9 to 0.4 V, the above line is split into two lines with energies of E{sub 1} = 2.55 eV and E{sub 2} = 2.75 eV and widths of Γ{sub 1} = 66 meV and Γ{sub 2} = 74 meV, respectively. The smaller widths of separate lines indicate that these lines are causedmore » by interband transitions in particular quantum wells within the active region. The difference between the interband transition energies E{sub 1} and E{sub 2} in identical quantum wells in the active region is related to the fact that the quantum wells are in an inhomogeneous electric field of the p–n junction. The magnitudes of the electric-field strengths in particular quantum wells in the active region of the heterostructure are estimated to be 1.6 and 2.2 MV/cm.« less

Quantum optical emulation of molecular vibronic spectroscopy using a trapped-ion device.

PubMed

Shen, Yangchao; Lu, Yao; Zhang, Kuan; Zhang, Junhua; Zhang, Shuaining; Huh, Joonsuk; Kim, Kihwan

2018-01-28

Molecules are one of the most demanding quantum systems to be simulated by quantum computers due to their complexity and the emergent role of quantum nature. The recent theoretical proposal of Huh et al. (Nature Photon., 9, 615 (2015)) showed that a multi-photon network with a Gaussian input state can simulate a molecular spectroscopic process. Here, we present the first quantum device that generates a molecular spectroscopic signal with the phonons in a trapped ion system, using SO 2 as an example. In order to perform reliable Gaussian sampling, we develop the essential experimental technology with phonons, which includes the phase-coherent manipulation of displacement, squeezing, and rotation operations with multiple modes in a single realization. The required quantum optical operations are implemented through Raman laser beams. The molecular spectroscopic signal is reconstructed from the collective projection measurements for the two-phonon-mode. Our experimental demonstration will pave the way to large-scale molecular quantum simulations, which are classically intractable, but would be easily verifiable by real molecular spectroscopy.

Zn1-xCdxSe/ZnSe multiple quantum well photomodulators

NASA Astrophysics Data System (ADS)

Tang, Jiuyao; Kawakami, Yoichi; Fujita, Shizuo; Fujita, Shigeo

1996-10-01

ZnCdSe/ZnSe multiple quantum well (MQW) transmission and reflection photomodulators operating at room temperature were fabricated employing quantum-confined Stark effect on the exciton absorption. Samples were grown on p-type GaAs substrates by MBE with an i-Zn0.87Cd0.13Se/ZnSe MQW heterostructure sandwiched by a ZnSe p-n junction. The transmission modulator was constructed with a Zn0.87Cd0.13Se/ZnSe MQW glued onto a piece of ITO film-covered glass with silver paste and epoxy. To avoid absorption in GaAs substrates, a window with a diameter of about 2 mm was opened using a selective etch. For the reflective use an Al mirror was deposited on the glass back surface, the device then operates in reflection with the light to be modulated making a double pass through the active quantum well region, thereby increasing the modulation amplitude. Measurement results are given in this paper for transmission, reflection, differential transmission, differential absorption, and differential reflection as a function of the incident photon wavelength and the applied field.

Characterisation of different polymorphs of tris(8-hydroxyquinolinato)aluminium(III) using solid-state NMR and DFT calculations

PubMed Central

Goswami, Mithun; Nayak, Pabitra K; Periasamy, N; Madhu, PK

2009-01-01

Background Organic light emitting devices (OLED) are becoming important and characterisation of them, in terms of structure, charge distribution, and intermolecular interactions, is important. Tris(8-hydroxyquinolinato)-aluminium(III), known as Alq3, an organomettalic complex has become a reference material of great importance in OLED. It is important to elucidate the structural details of Alq3 in its various isomeric and solvated forms. Solid-state nuclear magnetic resonance (NMR) is a useful tool for this which can also complement the information obtained with X-ray diffraction studies. Results We report here 27Al one-dimensional (1D) and two-dimensional (2D) multiple-quantum magic-angle spinning (MQMAS) NMR studies of the meridional (α-phase) and the facial (δ-phase) isomeric forms of Alq3. Quadrupolar parameters are estimated from the 1D spectra under MAS and anisotropic slices of the 2D spectra and also calculated using DFT (density functional theory) quantum-chemical calculations. We have also studied solvated phase of Alq3 containing ethanol in its lattice. We show that both the XRD patterns and the quadrupolar parameters of the solvated phase are different from both the α-phase and the δ-phase, although the fluorescence emission shows no substantial difference between the α-phase and the solvated phase. Moreover, we have shown that after the removal of ethanol from the matrix the solvated Alq3 has similar XRD patterns and quadrupolar parameters to that of the α-phase. Conclusion The 2D MQMAS experiments have shown that all the different modifications of Alq3 have 27Al in single unique crystallographic site. The quadrupolar parameters predicted using the DFT calculation under the isodensity polarisable continuum model resemble closely the experimentally obtained values. The solvated phase of Alq3 containing ethanol has structural difference from the α-phase of Alq3 (containing meridional isomer) from the solid-state NMR studies. Solid-state NMR can hence be used as an effective complementary tool to XRD for characterisation and structural elucidation. PMID:19900275

Characterisation of different polymorphs of tris(8-hydroxyquinolinato)aluminium(III) using solid-state NMR and DFT calculations.

PubMed

Goswami, Mithun; Nayak, Pabitra K; Periasamy, N; Madhu, P K

2009-11-09

Organic light emitting devices (OLED) are becoming important and characterisation of them, in terms of structure, charge distribution, and intermolecular interactions, is important. Tris(8-hydroxyquinolinato)-aluminium(III), known as Alq3, an organomettalic complex has become a reference material of great importance in OLED. It is important to elucidate the structural details of Alq3 in its various isomeric and solvated forms. Solid-state nuclear magnetic resonance (NMR) is a useful tool for this which can also complement the information obtained with X-ray diffraction studies. We report here 27Al one-dimensional (1D) and two-dimensional (2D) multiple-quantum magic-angle spinning (MQMAS) NMR studies of the meridional (alpha-phase) and the facial (delta-phase) isomeric forms of Alq3. Quadrupolar parameters are estimated from the 1D spectra under MAS and anisotropic slices of the 2D spectra and also calculated using DFT (density functional theory) quantum-chemical calculations. We have also studied solvated phase of Alq3 containing ethanol in its lattice. We show that both the XRD patterns and the quadrupolar parameters of the solvated phase are different from both the alpha-phase and the delta-phase, although the fluorescence emission shows no substantial difference between the alpha-phase and the solvated phase. Moreover, we have shown that after the removal of ethanol from the matrix the solvated Alq3 has similar XRD patterns and quadrupolar parameters to that of the alpha-phase. The 2D MQMAS experiments have shown that all the different modifications of Alq3 have 27Al in single unique crystallographic site. The quadrupolar parameters predicted using the DFT calculation under the isodensity polarisable continuum model resemble closely the experimentally obtained values. The solvated phase of Alq3 containing ethanol has structural difference from the alpha-phase of Alq3 (containing meridional isomer) from the solid-state NMR studies. Solid-state NMR can hence be used as an effective complementary tool to XRD for characterisation and structural elucidation.

Direct Measurement of Polarization-Induced Fields in GaN/AlN by Nano-Beam Electron Diffraction

NASA Astrophysics Data System (ADS)

Carvalho, Daniel; Müller-Caspary, Knut; Schowalter, Marco; Grieb, Tim; Mehrtens, Thorsten; Rosenauer, Andreas; Ben, Teresa; García, Rafael; Redondo-Cubero, Andrés; Lorenz, Katharina; Daudin, Bruno; Morales, Francisco M.

2016-06-01

The built-in piezoelectric fields in group III-nitrides can act as road blocks on the way to maximizing the efficiency of opto-electronic devices. In order to overcome this limitation, a proper characterization of these fields is necessary. In this work nano-beam electron diffraction in scanning transmission electron microscopy mode has been used to simultaneously measure the strain state and the induced piezoelectric fields in a GaN/AlN multiple quantum well system.

DOE Office of Scientific and Technical Information (OSTI.GOV)

Hodgson, P. D., E-mail: pdhodgson@hotmail.co.uk; Hayne, M.; Robson, A. J.

We report the results of continuous and time-resolved photoluminescence measurements on type-II GaSb quantum rings embedded within GaAs/Al{sub x}Ga{sub 1−x}As quantum wells. A range of samples were grown with different well widths, compensation-doping concentrations within the wells, and number of quantum-ring layers. We find that each of these variants have no discernible effect on the radiative recombination, except for the very narrowest (5 nm) quantum well. In contrast, single-particle numerical simulations of the sample predict changes in photoluminescence energy of up to 200 meV. This remarkable difference is explained by the strong Coulomb binding of electrons to rings that are multiply chargedmore » with holes. The resilience of the emission to compensation doping indicates that multiple hole occupancy of the quantum rings is required for efficient carrier recombination, regardless of whether these holes come from doping or excitation.« less

Practical quantum private query of blocks based on unbalanced-state Bennett-Brassard-1984 quantum-key-distribution protocol.

PubMed

Wei, Chun-Yan; Gao, Fei; Wen, Qiao-Yan; Wang, Tian-Yin

2014-12-18

Until now, the only kind of practical quantum private query (QPQ), quantum-key-distribution (QKD)-based QPQ, focuses on the retrieval of a single bit. In fact, meaningful message is generally composed of multiple adjacent bits (i.e., a multi-bit block). To obtain a message a1a2···al from database, the user Alice has to query l times to get each ai. In this condition, the server Bob could gain Alice's privacy once he obtains the address she queried in any of the l queries, since each a(i) contributes to the message Alice retrieves. Apparently, the longer the retrieved message is, the worse the user privacy becomes. To solve this problem, via an unbalanced-state technique and based on a variant of multi-level BB84 protocol, we present a protocol for QPQ of blocks, which allows the user to retrieve a multi-bit block from database in one query. Our protocol is somewhat like the high-dimension version of the first QKD-based QPQ protocol proposed by Jacobi et al., but some nontrivial modifications are necessary.

Spectroscopy of Single AlInAs Quantum Dots

NASA Astrophysics Data System (ADS)

Derebezov, I. A.; Gaisler, A. V.; Gaisler, V. A.; Dmitriev, D. V.; Toropov, A. I.; Kozhukhov, A. S.; Shcheglov, D. V.; Latyshev, A. V.; Aseev, A. L.

2018-03-01

A system of quantum dots based on Al x In1- x As/Al y Ga1- y As solid solutions is investigated. The use of Al x In1- x As wide-gap solid solutions as the basis of quantum dots substantially extends the spectral emission range to the short-wavelength region, including the wavelength region near 770 nm, which is of interest for the development of aerospace systems of quantum cryptography. The optical characteristics of Al x In1- x As single quantum dots grown by the Stranski-Krastanov mechanism were studied by cryogenic microphotoluminescence. The statistics of the emission of single quantum dot excitons was studied using a Hanbury Brown-Twiss interferometer. The pair photon correlation function indicates the sub-Poissonian nature of the emission statistics, which directly confirms the possibility of developing single-photon emitters based on Al x In1- x As quantum dots. The fine structure of quantum dot exciton states was investigated at wavelengths near 770 nm. The splitting of the exciton states is found to be similar to the natural width of exciton lines, which is of great interest for the development of entangled photon pair emitters based on Al x In1- x As quantum dots.

Direct current superconducting quantum interference device spectrometer for pulsed nuclear magnetic resonance and nuclear quadrupole resonance at frequencies up to 5 MHz

DOE Office of Scientific and Technical Information (OSTI.GOV)

TonThat, D.M.; Clarke, J.

1996-08-01

A spectrometer based on a dc superconducting quantum interference device (SQUID) has been developed for the direct detection of nuclear magnetic resonance (NMR) or nuclear quadrupole resonance (NQR) at frequencies up to 5 MHz. The sample is coupled to the input coil of the niobium-based SQUID via a nonresonant superconducting circuit. The flux locked loop involves the direct offset integration technique with additional positive feedback in which the output of the SQUID is coupled directly to a low-noise preamplifier. Precession of the nuclear quadrupole spins is induced by a magnetic field pulse with the feedback circuit disabled; subsequently, flux lockedmore » operation is restored and the SQUID amplifies the signal produced by the nuclear free induction signal. The spectrometer has been used to detect {sup 27}Al NQR signals in ruby (Al{sub 2}O{sub 3}[Cr{sup 3+}]) at 359 and 714 kHz. {copyright} {ital 1996 American Institute of Physics.}« less

Highly tunable quantum Hall far-infrared photodetector by use of GaAs/Al{sub x}Ga{sub 1−x}As-graphene composite material

DOE Office of Scientific and Technical Information (OSTI.GOV)

Tang, Chiu-Chun; Ling, D. C.; Chi, C. C.

2014-11-03

We have developed a highly tunable, narrow band far-infrared (FIR) photodetector which utilizes the characteristic merits of graphene and two-dimensional electron gas (2DEG) in GaAs/Al{sub x}Ga{sub 1−x}As heterostructure in the Quantum Hall states (QHS). The heterostructure surface is covered with chemical vapor-deposited graphene, which functions as a transparent top-gate to vary the electron density of the 2DEG. FIR response observed in the vicinity of integer QH regime can be effectively tuned in a wide range of 27–102 cm{sup −1} with a bias voltage less than −1 V. In addition, we have found that the presence of graphene can genuinely modulate the photoresponse.more » Our results demonstrate a promising direction for realizing a tunable long-wavelength FIR detector using QHS in GaAs 2DEG/ graphene composite material.« less

Identifying the Distribution of Al 3+ in LiNi 0.8 Co 0.15 Al 0.05 O 2

DOE Office of Scientific and Technical Information (OSTI.GOV)

Trease, Nicole M.; Seymour, Ieuan D.; Radin, Maxwell D.

2016-11-22

The doping of Al into layered Li transition metal (TM) oxide cathode materials, LiTMO 2, is known to improve the structural and thermal stability, although the origin of the enhanced properties is not well understood. The effect of aluminum doping on layer stabilization has been investigated using a combination of techniques to measure the aluminum distribution in layered LiNi 0.8Co 0.15Al 0.05O 2 (NCA) over multiple length scales with 27Al and 7Li MAS NMR, local electrode atom probe (APT) tomography, X-ray and neutron diffraction, DFT, and SQUID magnetic susceptibility measurements. APT ion maps show a homogenous distribution of Ni, Co,more » Al and O 2 throughout the structure at the single particle level in agreement with the high-temperature phase diagram. 7Li and 27Al NMR indicates that the Ni 3+ ions undergo a dynamic Jahn-Teller (JT) distortion. 27Al NMR spectra indicate that the Al reduces the strain associated with the JT distortion, by preferential electronic ordering of the JT long bonds directed toward the Al 3+ ion. The ability to understand the complex atomic and orbital ordering around Al 3+ demonstrated in the current method will be useful for studying the local environment of Al 3+ in a range of transition metal oxide battery materials.« less

Identifying the Distribution of Al 3+ in LiNi 0.8 Co 0.15 Al 0.05 O 2

DOE Office of Scientific and Technical Information (OSTI.GOV)

Trease, Nicole M.; Seymour, Ieuan D.; Radin, Maxwell D.

2016-10-07

The doping of Al into layered Li transition metal (TM) oxide cathode materials, LiTMO 2, is known to improve the structural and thermal stability, although the origin of the enhanced properties is not well understood. We have investigated the effect of aluminum doping on layer stabilization using a combination of techniques to measure the aluminum distribution in layered LiNi 0.8Co 0.15Al 0.05O 2 (NCA) over multiple length scales with 27Al and 7Li MAS NMR, local electron atom probe (LEAP) tomography, X-ray and neutron diffraction, DFT, and SQUID magnetic susceptibility measurements. LEAP tomographic maps show a homogenous distribution of Ni, Co,more » Al and O 2 throughout the structure at the particle level in agreement with the hightemperature phase diagram. 7Li and 27Al NMR indicates that the Ni 3+ ions undergo a dynamic Jahn-Teller (JT) distortion. 27Al NMR spectra indicate that the Al reduces the strain associated with the JT distortion, by preferential electronic ordering of the JT long bonds directed toward the Al 3+ ion. Our ability to understand the complex atomic and orbital ordering around Al 3+ demonstrated in the current method will be useful for studying the local environment of Al 3+ in a range of transition metal oxide battery materials.« less

Cryptanalysis and Improvement of the Semi-quantum Secret Sharing Protocol

NASA Astrophysics Data System (ADS)

Gao, Xiang; Zhang, Shibin; Chang, Yan

2017-08-01

Recently, Xie et al. Int. J. Theor. Phys. 54, 3819-3824, (2015) proposed a Semi-quantum secret sharing protocol (SQSS). Yin et al. Int. J. Theor. Phys. 55: 4027-4035, (2016) pointed out that this protocol suffers from the intercept-resend attack. Yin et al. also proposed an improved protocol. However, we find out that Yin et al.'s paper has some problems, we analyze Yin et al.'s paper, then proposed the improved semi-quantum secret sharing protocol. Our protocol is more secure and efficient, most importantly, our protocol satisfies the condition of semi-quantum.

Al x Ga1‑ x N-based semipolar deep ultraviolet light-emitting diodes

NASA Astrophysics Data System (ADS)

Akaike, Ryota; Ichikawa, Shuhei; Funato, Mitsuru; Kawakami, Yoichi

2018-06-01

Deep ultraviolet (UV) emission from Al x Ga1‑ x N-based light-emitting diodes (LEDs) fabricated on semipolar (1\\bar{1}02) (r-plane) AlN substrates is presented. The growth conditions are optimized. A high NH3 flow rate during metalorganic vapor phase epitaxy yields atomically flat Al y Ga1‑ y N (y > x) on which Al x Ga1‑ x N/Al y Ga1‑ y N multiple quantum wells with abrupt interfaces and good periodicity are fabricated. The fabricated r-Al x Ga1‑ x N-based LED emits at 270 nm, which is in the germicidal wavelength range. Additionally, the emission line width is narrow, and the peak wavelength is stable against the injection current, so the semipolar LED shows promise as a UV emitter.

Novel engineered compound semiconductor heterostructures for advanced electronics applications

NASA Astrophysics Data System (ADS)

Stillman, Gregory E.; Holonyak, Nick, Jr.; Coleman, James J.

1992-06-01

To provide the technology base that will enable SDIO capitalization on the performance advantages offered through novel engineered multiple-lavered compound semiconductor structures, this project has focussed on three specific areas: (1) carbon doping of AlGaAs/GaAs and InP/InGaAs materials for reliable high frequency heterojunction bipolar transistors; (2) impurity induced layer disordering and the environmental degradation of AlxGal-xAs-GaAs quantum-well heterostructures and the native oxide stabilization of AlxGal-xAs-GaAs quantum well heterostructure lasers; and (3) non-planar and strained-layer quantum well heterostructure lasers and laser arrays. The accomplishments in this three year research are reported in fifty-six publications and the abstracts included in this report.

Organization of the Optical Society of America Photonic Science Topical Meeting Series. Volume 7. Quantum Optoelectronics Held in Salt Lake City, Utah on 11-13 March 1991

DTIC Science & Technology

1992-05-22

Jewell, A. Scherer, B. Van der Gaag, S. L. McCall, J. P. Harbison, L. T. Florez, and L. M. Schiavone ...70 / MD4-1 Increased Optical Saturation Intensities in GalnAs Multiple Quantum Wells(MQWs) with AlGaInAs Barriers Thomas H. Wood, John Z. Pastalan...modulator is shown in Fig. 3. Also shown, Electron. Lett. 25, 88(1989). for comparison, are data for a GaInAs 2. Thomas H. Wood, John Z. Pastalan, MQW

Optical Nonlinearities in GaAs/GaAlAs Multiple Quantum Wells Fabricated by Metalorganic Chemical Vapor Deposition for Use in Optical Signal Processing.

DTIC Science & Technology

1987-12-01

larger energy separation of the terminal states. The spectra of the thicker wells show peaks due to transitions from the n=2 and n=3 electron states. The...are found in the theses of H. C. Lee (PhD) and M. Kawase (MS). Section III contains an invited paper submittted to Journal of Quantum Electronics ...steps are associated with the allowed energies of the "square well potential" and are a strong function of the dimensions of the well and the

Combining 27Al Solid-State NMR and First-Principles Simulations To Explore Crystal Structure in Disordered Aluminum Oxynitride.

PubMed

Tu, Bingtian; Liu, Xin; Wang, Hao; Wang, Weimin; Zhai, Pengcheng; Fu, Zhengyi

2016-12-19

The nuclear magnetic resonance (NMR) technique gives insight into the local information in a crystal structure, while Rietveld refinement of powder X-ray diffraction (PXRD) sketches out the framework of a crystal lattice. In this work, first-principles calculations were combined with the solid-state NMR technique and Rietveld refinement to explore the crystal structure of a disordered aluminum oxynitride (γ-alon). The theoretical NMR parameters (chemical shift, δ iso , quadrupolar coupling constants, C Q , and asymmetry parameter, η) of Al 22.5 O 28.5 N 3.5 , predicted by the gauge-including projector augmented wave (GIPAW) algorithm, were used to facilitate the analytical investigation of the 27 Al magic-angle spinning (MAS) NMR spectra of the as-prepared sample, whose formula was confirmed to be Al 2.811 O 3.565 N 0.435 by quantitative analysis. The experimental δ iso , C Q , and η of 27 Al showed a small discrepancy compared with theoretical models. The ratio of aluminum located at the 8a to 16d sites was calculated to be 0.531 from the relative integration of peaks in the 27 Al NMR spectra. The occupancies of aluminum at the 8a and 16d positions were determined through NMR investigations to be 0.9755 and 0.9178, respectively, and were used in the Rietveld refinement to obtain the lattice parameter and anion parameter of Al 2.811 O 3.565 N 0.435 . The results from 27 Al NMR investigations and PXRD structural refinement complemented each other. This work provides a powerful and accessible strategy to precisely understand the crystal structure of novel oxynitride materials with multiple disorder.

Quantum hall ferromagnets

NASA Astrophysics Data System (ADS)

Kumar, Akshay

We study several quantum phases that are related to the quantum Hall effect. Our initial focus is on a pair of quantum Hall ferromagnets where the quantum Hall ordering occurs simultaneously with a spontaneous breaking of an internal symmetry associated with a semiconductor valley index. In our first example ---AlAs heterostructures--- we study domain wall structure, role of random-field disorder and dipole moment physics. Then in the second example ---Si(111)--- we show that symmetry breaking near several integer filling fractions involves a combination of selection by thermal fluctuations known as "order by disorder" and a selection by the energetics of Skyrme lattices induced by moving away from the commensurate fillings, a mechanism we term "order by doping". We also study ground state of such systems near filling factor one in the absence of valley Zeeman energy. We show that even though the lowest energy charged excitations are charge one skyrmions, the lowest energy skyrmion lattice has charge > 1 per unit cell. We then broaden our discussion to include lattice systems having multiple Chern number bands. We find analogs of quantum Hall ferromagnets in the menagerie of fractional Chern insulator phases. Unlike in the AlAs system, here the domain walls come naturally with gapped electronic excitations. We close with a result involving only topology: we show that ABC stacked multilayer graphene placed on boron nitride substrate has flat bands with non-zero local Berry curvature but zero Chern number. This allows access to an interaction dominated system with a non-trivial quantum distance metric but without the extra complication of a non-zero Chern number.

Polarized time-resolved photoluminescence measurements of m-plane AlGaN/GaN MQWs

NASA Astrophysics Data System (ADS)

Rosales, Daniel; Gil, B.; Bretagnon, T.; Zhang, F.; Okur, S.; Monavarian, M.; Izioumskaia, N.; Avrutin, V.; Özgür, Ü.; Morkoç, H.; Leach, J. H.

2014-03-01

The optical properties of GaN/Al0.15Ga0.85N multiple quantum wells grown on m-plane oriented substrate are studied in 8K-300K temperature range. The optical spectra reveal strong in-plane optical anisotropies as predicted by group theory. Polarized time resolved temperature-dependent photoluminescence experiments are performed providing access to the relative contributions of the non-radiative and radiative recombination processes. We deduce the variation of the radiative decay time with temperature in the two polarizations.

Wavefunction Engineering of Spintronic devices in ZnO/MgO and GaN/AlN Quantum Structures Doped with Transition Metal Ions

DTIC Science & Technology

2006-08-01

2005). 7. " Dependence of the interband transitions on the In mole-fraction and the applied electric field in InxGaj_xAs/In0. 52Al0.48As multiple... tunneling boundary conditions for open structures. The boundary conditions at interfaces require the maintenance of derivative operator ordering...computational methods for the solution of Schr6dinger’s equations for scattering/ tunneling structures as well as for the eigenvalue problems that arise for

Energy structure and radiative lifetimes of InxGa1-xN /AlN quantum dots

NASA Astrophysics Data System (ADS)

Aleksandrov, Ivan A.; Zhuravlev, Konstantin S.

2018-01-01

We report calculations of the ground state transition energies and the radiative lifetimes in InxGa1-xN /AlN quantum dots with different size and indium content. The ground state transition energy and the radiative lifetime of the InxGa1-xN /AlN quantum dots can be varied over a wide range by changing the height of the quantum dot and the indium content. The sizes and compositions for quantum dots emitting in the wavelength range for fiber-optic telecommunications have been found. The radiative lifetime of the InxGa1-xN /AlN quantum dots increases with increase in quantum dot height at a constant indium content, and increases with increase in indium content at constant quantum dot height. For quantum dots with constant ground state transition energy the radiative lifetime decreases with increase in indium content.

Radiation Transport of Heliospheric Lyman-alpha from Combined Cassini and Voyager Data Sets

NASA Technical Reports Server (NTRS)

Pryor, W.; Gangopadhyay, P.; Sandel, B.; Forrester, T.; Quemerais, E.; Moebius, E.; Esposito, L.; Stewart, I.; McClintock, W.; Jouchoux, A.;

Quasiparticle Aggregation in the Fractional Quantum Hall Effect

DOE R&D Accomplishments Database

Laughlin, R. B.

1984-10-10

Quasiparticles in the Fractional Quantum Hall Effect behave qualitatively like electrons confined to the lowest landau level, and can do everything electrons can do, including condense into second generation Fractional Quantum Hall ground states. I review in this paper the reasoning leading to variational wavefunctions for ground state and quasiparticles in the 1/3 effect. I then show how two-quasiparticle eigenstates are uniquely determined from symmetry, and how this leads in a natural way to variational wavefunctions for composite states which have the correct densities (2/5, 2/7, ...). I show in the process that the boson, anyon and fermion representations for the quasiparticles used by Haldane, Halperin, and me are all equivalent. I demonstrate a simple way to derive Halperin`s multiple-valued quasiparticle wavefunction from the correct single-valued electron wavefunction. (auth)

DOE Office of Scientific and Technical Information (OSTI.GOV)

Guo, Wei, E-mail: wguo2@ncsu.edu; Kirste, Ronny; Bryan, Zachary

Enhanced light extraction efficiency was demonstrated on nanostructure patterned GaN and AlGaN/AlN Multiple-Quantum-Well (MQW) structures using mass production techniques including natural lithography and interference lithography with feature size as small as 100 nm. Periodic nanostructures showed higher light extraction efficiency and modified emission profile compared to non-periodic structures based on integral reflection and angular-resolved transmission measurement. Light extraction mechanism of macroscopic and microscopic nanopatterning is discussed, and the advantage of using periodic nanostructure patterning is provided. An enhanced photoluminescence emission intensity was observed on nanostructure patterned AlGaN/AlN MQW compared to as-grown structure, demonstrating a large-scale and mass-producible pathway to higher lightmore » extraction efficiency in deep-ultra-violet light-emitting diodes.« less

An Acoustic Charge Transport Imager for High Definition Television Applications: Reliability Modeling and Parametric Yield Prediction of GaAs Multiple Quantum Well Avalanche Photodiodes. Degree awarded Oct. 1997

NASA Technical Reports Server (NTRS)

Hunt, W. D.; Brennan, K. F.; Summers, C. J.; Yun, Ilgu

1994-01-01

Reliability modeling and parametric yield prediction of GaAs/AlGaAs multiple quantum well (MQW) avalanche photodiodes (APDs), which are of interest as an ultra-low noise image capture mechanism for high definition systems, have been investigated. First, the effect of various doping methods on the reliability of GaAs/AlGaAs multiple quantum well (MQW) avalanche photodiode (APD) structures fabricated by molecular beam epitaxy is investigated. Reliability is examined by accelerated life tests by monitoring dark current and breakdown voltage. Median device lifetime and the activation energy of the degradation mechanism are computed for undoped, doped-barrier, and doped-well APD structures. Lifetimes for each device structure are examined via a statistically designed experiment. Analysis of variance shows that dark-current is affected primarily by device diameter, temperature and stressing time, and breakdown voltage depends on the diameter, stressing time and APD type. It is concluded that the undoped APD has the highest reliability, followed by the doped well and doped barrier devices, respectively. To determine the source of the degradation mechanism for each device structure, failure analysis using the electron-beam induced current method is performed. This analysis reveals some degree of device degradation caused by ionic impurities in the passivation layer, and energy-dispersive spectrometry subsequently verified the presence of ionic sodium as the primary contaminant. However, since all device structures are similarly passivated, sodium contamination alone does not account for the observed variation between the differently doped APDs. This effect is explained by the dopant migration during stressing, which is verified by free carrier concentration measurements using the capacitance-voltage technique.

Nearly Efficiency-Droop-Free AlGaN-Based Ultraviolet Light-Emitting Diodes with a Specifically Designed Superlattice p-Type Electron Blocking Layer for High Mg Doping Efficiency.

PubMed

Zhang, Zi-Hui; Huang Chen, Sung-Wen; Chu, Chunshuang; Tian, Kangkai; Fang, Mengqian; Zhang, Yonghui; Bi, Wengang; Kuo, Hao-Chung

2018-04-24

This work reports a nearly efficiency-droop-free AlGaN-based deep ultraviolet light-emitting diode (DUV LED) emitting in the peak wavelength of 270 nm. The DUV LED utilizes a specifically designed superlattice p-type electron blocking layer (p-EBL). The superlattice p-EBL enables a high hole concentration in the p-EBL which correspondingly increases the hole injection efficiency into the multiple quantum wells (MQWs). The enhanced hole concentration within the MQW region can more efficiently recombine with electrons in the way of favoring the radiative recombination, leading to a reduced electron leakage current level. As a result, the external quantum efficiency for the proposed DUV LED structure is increased by 100% and the nearly efficiency-droop-free DUV LED structure is obtained experimentally.

Nearly Efficiency-Droop-Free AlGaN-Based Ultraviolet Light-Emitting Diodes with a Specifically Designed Superlattice p-Type Electron Blocking Layer for High Mg Doping Efficiency

NASA Astrophysics Data System (ADS)

Zhang, Zi-Hui; Huang Chen, Sung-Wen; Chu, Chunshuang; Tian, Kangkai; Fang, Mengqian; Zhang, Yonghui; Bi, Wengang; Kuo, Hao-Chung

2018-04-01

This work reports a nearly efficiency-droop-free AlGaN-based deep ultraviolet light-emitting diode (DUV LED) emitting in the peak wavelength of 270 nm. The DUV LED utilizes a specifically designed superlattice p-type electron blocking layer (p-EBL). The superlattice p-EBL enables a high hole concentration in the p-EBL which correspondingly increases the hole injection efficiency into the multiple quantum wells (MQWs). The enhanced hole concentration within the MQW region can more efficiently recombine with electrons in the way of favoring the radiative recombination, leading to a reduced electron leakage current level. As a result, the external quantum efficiency for the proposed DUV LED structure is increased by 100% and the nearly efficiency-droop-free DUV LED structure is obtained experimentally.

LEDs based upon AlGaInP heterostructures with multiple quantum wells: comparison of fast neutrons and gamma-quanta irradiation

NASA Astrophysics Data System (ADS)

Gradoboev, A. V.; Orlova, K. N.; Simonova, A. V.

2018-05-01

The paper presents the research results of watt and volt characteristics of LEDs based upon AlGaInP heterostructures with multiple quantum wells in the active region. The research is completed for LEDs (emission wavelengths 624 nm and 590 nm) under irradiation by fast neutron and gamma-quanta in passive powering mode. Watt-voltage characteristics in the average and high electron injection areas are described as a power function of the operating voltage. It has been revealed that the LEDs transition from average electron injection area to high electron injection area occurs by overcoming the transition area. It disappears as it get closer to the limit result of the irradiation LEDs that is low electron injection mode in the entire supply voltage range. It has been established that the gamma radiation facilitates initial defects restructuring only 42% compared to 100% when irradiation is performed by fast neutrons. Ratio between measured on the boundary between low and average electron injection areas current value and the contribution magnitude of the first stage LEDs emissive power reducing is established. It is allows to predict LEDs resistance to irradiation by fast neutrons and gamma rays.

Recombination dynamics of excitons with low non-radiative component in semi-polar (10-11)-oriented GaN/AlGaN multiple quantum wells

NASA Astrophysics Data System (ADS)

Rosales, D.; Gil, B.; Bretagnon, T.; Guizal, B.; Izyumskaya, N.; Monavarian, M.; Zhang, F.; Okur, S.; Avrutin, V.; Özgür, Ü.; Morkoç, H.

2014-09-01

Optical properties of GaN/Al0.2Ga0.8N multiple quantum wells grown with semi-polar (10-11) orientation on patterned 7°-off Si (001) substrates have been investigated. Studies performed at 8 K reveal the in-plane anisotropic behavior of the QW photoluminescence (PL) intensity for this semi-polar orientation. The time resolved PL measurements were carried out in the temperature range from 8 to 295 K to deduce the effective recombination decay times, with respective radiative and non-radiative contributions. The non-radiative component remains relatively weak with increasing temperature, indicative of high crystalline quality. The radiative decay time is a consequence of contribution from both localized and free excitons. We report an effective density of interfacial defects of 2.3 × 1012 cm-2 and a radiative recombination time of τloc = 355 ps for the localized excitons. This latter value is significantly larger than those reported for the non-polar structures, which we attribute to the presence of a weak residual electric field in the semi-polar QW layers.

Immobilization of radioactive iodine in silver aluminophosphate glasses.

PubMed

Lemesle, Thomas; Méar, François O; Campayo, Lionel; Pinet, Olivier; Revel, Bertrand; Montagne, Lionel

2014-01-15

Silver aluminophosphate glasses have been investigated as matrices for the immobilization of radioactive iodine. In this study, up to 28mol% AgI have been incorporated without volatilization thanks to a low temperature synthesis protocol. Alumina was added in the composition in order to increase the glass transition temperature for a better thermal stability in a repository conditions. Two series of glasses have been investigated, based on AgPO3 and Ag5P3O10 compositions, and with 0-5mol% Al2O3. We report (31)P, (27)Al and (109)Ag NMR study of these glasses, including advanced measurement of the connectivities through {(27)Al}-(31)P cross-polarization and (31)P-(31)P double-quantum correlation. We confirm that AgI is inserted in the aluminophosphate glasses and does not form clusters. AgI does not induce any modification of the glass polymerization but only an expansion of the network. Despite no evidence for crystallization could be obtained from XRD, NMR revealed that the introduction of AgI induces an exclusion of alumina from the network, leading to the crystallization of aluminophosphate phases such as Al(PO3)3 or AlPO4. As a consequence, despite NMR gives evidence for the presence of aluminophosphate bonds, only a limited effect of alumina addition on thermal properties is observed. Copyright © 2013 Elsevier B.V. All rights reserved.

Comment on "Dynamic quantum secret sharing"

NASA Astrophysics Data System (ADS)

Liao, Ci-Hong; Yang, Chun-Wei; Hwang, Tzonelish

2013-10-01

Hsu et al. (Quantum Inf Process 12:331-344,2013) proposed a dynamic quantum secret sharing (DQSS) protocol using the entanglement swapping of Bell states for an agent to easily join (or leave) the system. In 2013, Wang and Li (Quantum Inf Process 12(5):1991-1997, 2013) proposed a collusion attack on Hsu et al.'s DQSS protocol. Nevertheless, this study points out a new security issue on Hsu et al.'s DQSS protocol regarding to the honesty of a revoked agent. Without considering this issue, the DQSS protocol could be failed to provide secret sharing function.

Revisiting Deng et al.'s Multiparty Quantum Secret Sharing Protocol

NASA Astrophysics Data System (ADS)

Hwang, Tzonelih; Hwang, Cheng-Chieh; Yang, Chun-Wei; Li, Chuan-Ming

2011-09-01

The multiparty quantum secret sharing protocol [Deng et al. in Chin. Phys. Lett. 23: 1084-1087, 2006] is revisited in this study. It is found that the performance of Deng et al.'s protocol can be much improved by using the techniques of block-transmission and decoy single photons. As a result, the qubit efficiency is improved 2.4 times and only one classical communication, a public discussion, and two quantum communications between each agent and the secret holder are needed rather than n classical communications, n public discussions, and 3n/2 quantum communications required in the original scheme.

Trade-off between bandwidth and efficiency in semipolar (20 2 ¯ 1 ¯) InGaN/GaN single- and multiple-quantum-well light-emitting diodes

NASA Astrophysics Data System (ADS)

Monavarian, M.; Rashidi, A.; Aragon, A. A.; Nami, M.; Oh, S. H.; DenBaars, S. P.; Feezell, D.

2018-05-01

InGaN/GaN light-emitting diodes (LEDs) with large modulation bandwidths are desirable for visible-light communication. Along with modulation speed, the consideration of the internal quantum efficiency (IQE) under operating conditions is also important. Here, we report the modulation characteristics of semipolar (20 2 ¯ 1 ¯ ) InGaN/GaN (LEDs) with single-quantum well (SQW) and multiple-quantum-well (MQW) active regions grown on free-standing semipolar GaN substrates with peak internal quantum efficiencies (IQEs) of 0.93 and 0.73, respectively. The MQW LEDs exhibit on average about 40-80% higher modulation bandwidth, reaching 1.5 GHz at 13 kA/cm2, but about 27% lower peak IQE than the SQW LEDs. We extract the differential carrier lifetimes (DLTs), RC parasitics, and carrier escape lifetimes and discuss their role in the bandwidth and IQE characteristics. A coulomb-enhanced capture process is shown to rapidly reduce the DLT of the MQW LED at high current densities. Auger recombination is also shown to play little role in increasing the speed of the LEDs. Finally, we investigate the trade-offs between the bandwidth and efficiency and introduce the bandwidth-IQE product as a potential figure of merit for optimizing speed and efficiency in InGaN/GaN LEDs.

Solar energy converters based on multi-junction photoemission solar cells.

PubMed

Tereshchenko, O E; Golyashov, V A; Rodionov, A A; Chistokhin, I B; Kislykh, N V; Mironov, A V; Aksenov, V V

2017-11-23

Multi-junction solar cells with multiple p-n junctions made of different semiconductor materials have multiple bandgaps that allow reducing the relaxation energy loss and substantially increase the power-conversion efficiency. The choice of materials for each sub-cell is very limited due to the difficulties in extracting the current between the layers caused by the requirements for lattice- and current-matching. We propose a new vacuum multi-junction solar cell with multiple p-n junctions separated by vacuum gaps that allow using different semiconductor materials as cathode and anode, both activated to the state of effective negative electron affinity (NEA). In this work, the compact proximity focused vacuum tube with the GaAs(Cs,O) photocathode and AlGaAs/GaAs-(Cs,O) anode with GaAs quantum wells (QWs) is used as a prototype of a vacuum single-junction solar cell. The photodiode with the p-AlGaAs/GaAs anode showed the spectral power-conversion efficiency of about 1% at V bias  = 0 in transmission and reflection modes, while, at V bias  = 0.5 V, the efficiency increased up to 10%. In terms of energy conservation, we found the condition at which the energy cathode-to-anode transition was close to 1. Considering only the energy conservation part, the NEA-cell power-conversion efficiency can rich a quantum yield value which is measured up to more than 50%.

Deep-UV emission at 219 nm from ultrathin MBE GaN/AlN quantum heterostructures

NASA Astrophysics Data System (ADS)

Islam, S. M.; Protasenko, Vladimir; Lee, Kevin; Rouvimov, Sergei; Verma, Jai; Xing, Huili Grace; Jena, Debdeep

2017-08-01

Deep ultraviolet (UV) optical emission below 250 nm (˜5 eV) in semiconductors is traditionally obtained from high aluminum containing AlGaN alloy quantum wells. It is shown here that high-quality epitaxial ultrathin binary GaN quantum disks embedded in an AlN matrix can produce efficient optical emission in the 219-235 nm (˜5.7-5.3 eV) spectral range, far above the bulk bandgap (3.4 eV) of GaN. The quantum confinement energy in these heterostructures is larger than the bandgaps of traditional semiconductors, made possible by the large band offsets. These molecular beam epitaxy-grown extreme quantum-confinement GaN/AlN heterostructures exhibit an internal quantum efficiency of 40% at wavelengths as short as 219 nm. These observations together with the ability to engineer the interband optical matrix elements to control the direction of photon emission in such binary quantum disk active regions offer unique advantages over alloy AlGaN quantum well counterparts for the realization of deep-UV light-emitting diodes and lasers.

Clay Minerals

DOE Office of Scientific and Technical Information (OSTI.GOV)

Mueller, Karl T.; Sanders, Rebecca L.; Washton, Nancy M.

2014-03-14

Clay minerals are important components of the environment and are involved or implicated in processes such as the uptake of pollutants and the release of nutrients and as potential platforms for a number of chemical reactions. Owing to their small particle sizes (typically, on the order of microns or smaller) and mixing with a variety of other minerals and soil components, advanced characterization methods are needed to study their structures, dynamics, and reactivities. In this article, we describe the use of solid-state NMR methods to characterize the structures and chemistries of clay minerals. Early one-pulse magic-angle spinning (MAS) NMR studiesmore » of 27Al and 29Si have now been enhanced and extended with new studies utilizing advanced methodologies (such as Multiple Quantum MAS) as well as studies of less-sensitive nuclei. In additional work, the issue of reactivity of clay minerals has been addressed, including studies of reactive surface area in the environment. Utilizations of NMR-sensitive nuclides within the clay minerals themselves, and in molecules that react with specific sites on the clay mineral surfaces, have aided in understanding the reactivity of these complex aluminosilicate systems.« less

Photoluminescence kinetics slowdown in an ensemble of GaN/AlN quantum dots upon tunneling interaction with defects

DOE Office of Scientific and Technical Information (OSTI.GOV)

Aleksandrov, I. A., E-mail: Aleksandrov@isp.nsc.ru; Mansurov, V. G.; Zhuravlev, K. S.

2016-08-15

The carrier recombination dynamics in an ensemble of GaN/AlN quantum dots is studied. The model proposed for describing this dynamics takes into account the transition of carriers between quantum dots and defects in a matrix. Comparison of the experimental and calculated photoluminescence decay curves shows that the interaction between quantum dots and defects slows down photoluminescence decay in the ensemble of GaN/AlN quantum dots.

Spatial inhomogeneities in Al x Ga1-x N quantum wells induced by the surface morphology of AlN/sapphire templates

NASA Astrophysics Data System (ADS)

Zeimer, Ute; Jeschke, Joerg; Mogilatenko, Anna; Knauer, Arne; Kueller, Viola; Hoffmann, Veit; Kuhn, Christian; Simoneit, Tino; Martens, Martin; Wernicke, Tim; Kneissl, Michael; Weyers, Markus

2015-11-01

The effects of the template on the optical and structural properties of Al0.75Ga0.25N/Al0.8Ga0.2N multiple quantum well (MQWs) laser active regions have been investigated. The laser structures for optical pumping were grown on planar c-plane AlN/sapphire as well as on thick epitaxially laterally overgrown (ELO) AlN layers on patterned AlN/sapphire. Two ELO AlN/sapphire templates were investigated, one with a miscut of the sapphire surface to the m-direction with an angle of 0.25°, the other with a miscut angle of 0.25° to the sapphire a-direction. The MQWs are studied by atomic force microscopy, plan-view cathodoluminescence (CL) at room temperature and 83 K as well as transmission electron microscopy using high-angle annular dark-field imaging and energy-dispersive x-ray spectroscopy. The results are compared to optical pumping measurements. It was found that the surface morphology of the templates determines the lateral wavelength distribution in the MQWs observed by spectral CL mappings. The lateral wavelength spread is largest for the laser structures grown on ELO AlN with miscut to sapphire a-direction caused by the local variation of the MQW thicknesses and the Ga incorporation at macrosteps on the ELO-AlN. A CL peak wavelength spread of up to 7 nm has been found. The MQWs grown on planar AlN/sapphire templates show a homogeneous wavelength distribution. However, due to the high threading dislocation density and the resulting strong nonradiative recombination, laser operation could not be achieved. The laser structures grown on ELO AlN/sapphire show optically pumped lasing with a record short wavelength of 237 nm.

Quantum critical scaling in beta-YbAlB4 and theoretical implications

NASA Astrophysics Data System (ADS)

Nevidomskyy, Andriy

2012-02-01

Emergent phenomena in quantum materials are subject of intense experimental and theoretical research at present. A wonderful example thereof are the sister phases of YbAlB4 - a newly discovered heavy fermion material [1]. While one phase (α-YbAlB4) is a heavy Fermi liquid, its sibling β-YbAlB4 is quantum critical, supporting an unconventional superconductivity with a tiny transition temperature of ˜80 mK. Latest experiments [2] uncover the quantum critical T/B-scaling in β-YbAlB4 and prove that superconductivity emerges from a strange metal governed by an extremely fragile quantum criticality, which apparently occurs at zero field, without any external tuning. Here, we will present a theoretical perspective on the quantum critical scaling in β-YbAlB4 and will show that the critical exponents can be derived from the nodal structure of the hybridization matrix between Yb f-band and the conduction electrons. It follows that the free energy at low temperatures can be written in a scaling form F[(kBT)^2 + (gμBB)^2]^3/4, which predicts the divergent Sommerfeld coefficient γ and quasi-particle effective mass as B->0: γ˜m^*/m B-1/2. This is indeed observed in the experiment [1,2], which places a tiny upper bound on the critical magnetic field Bc<0.2 mT. We will discuss theoritical implications of this fragile intrinsic quantum criticality in β-YbAlB4 and discuss the possibility of a quantum critical phase, rather than a quantum critical point, in this material. [1] S. Nakatsuji et al., Nature Physics 4, 603 (2008). [2] Y. Matsumoto, S. Nakatsuji, K. Kuga, Y. Karaki, Y. Shimura, T. Sakakibara, A. H. Nevidomskyy, and P. Coleman, Science 331, 316 (2011).

Proceedings of the 8th International Symposium on Foundations of Quantum Mechanics in the Light of New Technology

NASA Astrophysics Data System (ADS)

Ishioka, Sachio; Fujikawa, Kazuo

2006-06-01

Preface -- Committees -- Opening address / H. Fukuyama -- Welcoming address / N. Osakabe -- Special lecture. Albert Einstein: opportunity and perception / C. N. Yang -- Quantum information and entanglement. Quantum optics with single atoms and photons / H. J. Kimble. Quantum information system experiments using a single photon source / Y. Yamamoto. Quantum communication and quantum computation with entangled photons / A. Zeilinger. High-fidelity quantum teleportation and a quantum teleportation network for continuous variables / N. Takei, A. Furusawa. Long lived entangled states / H. Häffner ... [et al.]. Quantum non-locality using tripartite entanglement with non-orthogonal states / J. V. Corbett, D. Home. Quantum entanglement and wedge product / H Heydari. Analysis of the generation of photon pairs in periodically poled lithium niobate / J. Söderholm ... [et al.]. Generation of entangled photons in a semiconductor and violation of Bell's inequality / G. Oohata, R. Shimizu, K. Edamatsu -- Quantum computing. Decoherence of a Josephson junction flux qubit / Y. Nakamura ... [et al.]. Spectroscopic analysis of a candidate two-qubit silicon quantum computer in the microwave regime / J. Gorman, D. G. Hasko, D. A. Williams. Berry phase detection in charge-coupled flux-qubits and the effect of decoherence / H. Nakano ... [et al.]. Locally observable conditions for the successful implementation of entangling multi-qubit quantum gates / H. F. Hofmann, R. Okamoto, S. Takeuchi. State control in flux qubit circuits: manipulating optical selection rules of microwave-assisted transitions in three-level artificial atoms / Y.-X. Liu ... [et al.]. The effect of local structure and non-uniformity on decoherence-free states of charge qubits / T. Tanamoto, S. Fujita. Entanglement-assisted estimation of quantum channels / A. Fujiwara. Superconducting quantum bit with ferromagnetic [symbol]-Junction / T. Yamashita, S. Takahashi, S. Maekawa. Generation of macroscopic Greenberger-Horne-Zeilinger states in Josephson systems / T. Fujii, M. Nishida, N. Hatakenaka -- Quantum-dot systems. Tunable tunnel and exchange couplings in double quantum dots / S. Tarucha, T. Hatano, M. Stopa. Coherent transport through quantum dots / S. Katsumoto ... [et al.]. Electrically pumped single-photon sources towards 1.3 [symbol]m / X. Xu ... [et al.]. Aharonov-Bohm-type effects in antidot arrays and their decoherence / M. Kato ... [et al.]. Nonequilibrium Kondo dot connected to ferromagnetic leads / Y. Utsumi ... [et al.]. Full counting-statistics in a single-electron transistor in the presence of strong quantum fluctuations / Y. Utsumi -- Anomalous Hall effect and Spin-Hall effect. Geometry and the anomalous Hall effect in ferromagnets / N. P. Ong, W.-L. Lee. Control of spin chirality, Berry phase, and anomalous Hall effect / Y. Tokura, Y. Taguchi. Quantum geometry and Hall effect in ferromagnets and semiconductors / N. Nagaosa. Spin-Hall effect in a semiconductor two-dimensional hole gas with strong spin-orbit coupling / J. Wunderlich ... [et al.]. Intrinsic spin Hall effect in semiconductors / S. Murakami -- Spin related phenomena. Theory of spin transfer phenomena in magnetic metals and semiconductors / A. S. Núñez, A. H. MacDonald. Spin filters of semiconductor nanostructures / T. Dietl, G. Grabecki, J. Wróbel. Experimental study on current-driven domain wall motion / T. Ono ... [et al.]. Magnetization reversal of ferromagnetic nano-dot by non local spin injection / Y. Otani, T. Kimura. Theory of current-driven domain wall dynamics / G. Tatara ... [et al.]. Magnetic impurity states and ferromagnetic interaction in diluted magnetic semiconductors / M. Ichimura ... [et al.]. Geometrical effect on spin current in magnetic nano-structures / M. Ichimura, S. Takahashi, S. Maekawa. Ferromagnetism in anatase TiO[symbol] codoped with Co and Nb / T. Hitosugi ... [et al.] -- Superconductivity in nano-systems. Nonlinear quantum effects in nanosuperconductors / C. Carballeira ... [et al.]. Coalescence and rearrangement of vortices in mesoscopic superconductors / A. Kanda ... [et al.]. Superconductivity in topologically nontrivial spaces / M. Hayashi ... [et al.]. DC-SQUID ratchet using atomic point contact / Y. Ootuka, H. Miyazaki, A. Kanda. Superconducting wire network under spatially modulated magnetic field / H. Sano ... [et al.]. Simple and stable control of mechanical break junction for the study of superconducting atomic point contact / H. Miyazaki ... [et al.]. Critical currents in quasiperiodic pinning arrays: one-dimensional chains and Penrose lattices / V. R. Misko, S. Savel'ev, F. Nori. Macroscopic quantum tunneling in high-Tc superconductor Josephson junctions / S. Kawabata -- Novel properties of carbon nanotubes. Carbon nanotubes and unique transport properties: importance of symmetry and channel number / T. Ando. Optical processes in single-walled carbon nanotubes threaded by a magnetic flux / J. Kono ... [et al.]. Non-equilibrium transport through a single-walled carbon nanotube with highly transparent coupling to reservoirs / P. Recher, N. Y. Kim, Y. Yamamoto -- Novel properties of nano-systems. Transport properties in low dimensional artificial lattice of gold nano-particles / S. Saito ... [et al.]. First principles study of dihydride-chain structures on H-terminated Si(100) surface / Y. Suwa ... [et al.]. Electrical property of Ag nanowires fabricated on hydrogen-terminated Si(100) surface / M. Fujimori, S. Heike, T. Hashizume. Effect of environment on ionization of excited atoms embedded in a solid-state cavity / M. Ando ... [et al.]. Development of universal virtual spectroscope for optoelectronics research: first principles software replacing dielectric constant measurements / T. Hamada ... [et al.]. Quantum Nernst effect / H Nakamura, N. Hatano, R. Shirasaki -- Precise measurements. Quantum phenomena visualized using electron waves / A. Tonomura. An optical lattice clock: ultrastable atomic clock with engineered perturbation / H. Katori ... [et al.]. Development of Mach-Zehnder interferometer and "coherent beam steering" technique for cold neutron / K. Taketani ... [et al.]. Surface potential measurement by atomic force microscopy using a quartz resonator / S. Heike, T. Hashizume -- Fundamental Problems in quantum physics. Berry's phases and topological properties in the Born-Oppenheimer approximation / K. Fujikawa. Self-trapping of Bose-Einstein condensates by oscillating interactions / H. Saito, M. Ueda. Spinor solitons in Bose-Einstein condensates - atomic spin transport / J. Ieda. Spin decoherence in a gravitational field / H. Terashima, M. Ueda. Berry's phase of atoms with different sign of the g-factor in a conical rotating magnetic field observed by a time-domain atom interferometer / A. Morinaga ... [et al.] -- List of participants.

1.3-μm InGaAsP planar buried heterostructure laser diodes with AlInAs electron stopper layer

NASA Astrophysics Data System (ADS)

Tsai, Chia-Lung; Yen, Chih-Ta; Chou, Cheng-Yi; Chang, S. J.; Wu, Meng-Chyi

2012-06-01

This study reports on the realization of 1.3-μm InGaAsP buried-heterostructure (BH) laser diodes (LDs) via an Fe-doped semi-insulating InP layer and an AlInAs electron stopper layer (ESL). Experimentally, the as-cleaved BH LD with an AlInAs ESL exhibited improved characteristics in terms of threshold current, slope efficiency, and maximum light output power at 90 °C as compared to those of the normal BH LD without an AlInAs ESL. In addition, high internal quantum efficiency or reduced threshold current density was observed, indicating increased modal gain in BH LDs fabricated with an AlInAs epilayer on top of the active region. It was also found that the temperature sensitivity of the BH LDs with an AlInAs ESL is more stable than that of the normal BH LDs. These results could be attributed to the suppression of thermal carrier leakage out of strain-compensated multiple-quantum-well by a large conduction-band offset of the AlInAs/InGaAsP heterojunction. Otherwise, without consideration of damping factor or coupling loss, the 3-dB bandwidth of the proposed BH LDs reaches a high value of 15.3 GHz. Finally, this TO-can packaged BH LD shows an eye-opening feature with the extinction ratio of 7.49 dB while operating at 10 Gbit/s at 50 mA.

Integration of GaN/AlN all-optical switch with SiN/AlN waveguide utilizing spot-size conversion.

PubMed

Iizuka, Norio; Yoshida, Haruhiko; Managaki, Nobuto; Shimizu, Toshimasa; Hassanet, Sodabanlu; Cumtornkittikul, Chiyasit; Sugiyama, Masakazu; Nakano, Yoshiaki

2009-12-07

Spot-size converters for an all-optical switch utilizing the intersubband transition in GaN/AlN multiple quantum wells are studied with the purpose of reducing operation power by improving the coupling efficiency between the input fiber and the switch. With a stair-like spot-size converter, the absorption saturation of 5 dB is achieved with a pulse energy of 25 pJ. The switch is integrated with a SiN/AlN waveguide and spot-size converters, and the structure provides the possibility of an integration of the switch with other functional devices. To further improve the coupling loss between the waveguide and the switch, triangular-shaped converters are investigated, demonstrating losses as low as 2 dB/facet.

A field induced guide-antiguide modulator of GaAs-AlGaAs

NASA Technical Reports Server (NTRS)

Huang, T. C.; Chung, Y.; Young, D. B.; Dagli, N.; Coldren, L. A.

1991-01-01

A guide-antiguide modulator of GaAs-AlGaAs using the electric-field-induced waveguide concept was demonstrated. The device was formed with a central waveguide electrode sandwiched between two antiguide electrodes on the surface of a p-i-n multiple quantum well (MQW). Switching between lateral guiding and antiguiding was accomplished by reverse biasing either the central electrode or the adjacent electrodes to increase the index beneath these respective regions. The on-off ratio was measured to be 20:1 with a propagation loss of the on-state of about 5 dB/mm.

Cubic GaN quantum dots embedded in zinc-blende AlN microdisks

NASA Astrophysics Data System (ADS)

Bürger, M.; Kemper, R. M.; Bader, C. A.; Ruth, M.; Declair, S.; Meier, C.; Förstner, J.; As, D. J.

2013-09-01

Microresonators containing quantum dots find application in devices like single photon emitters for quantum information technology as well as low threshold laser devices. We demonstrate the fabrication of 60 nm thin zinc-blende AlN microdisks including cubic GaN quantum dots using dry chemical etching techniques. Scanning electron microscopy analysis reveals the morphology with smooth surfaces of the microdisks. Micro-photoluminescence measurements exhibit optically active quantum dots. Furthermore this is the first report of resonator modes in the emission spectrum of a cubic AlN microdisk.

Enhancement of coherent acoustic phonons in InGaN multiple quantum wells

NASA Astrophysics Data System (ADS)

Hafiz, Shopan D.; Zhang, Fan; Monavarian, Morteza; Avrutin, Vitaliy; Morkoç, Hadis; Özgür, Ümit

2015-03-01

Enhancement of coherent zone folded longitudinal acoustic phonon (ZFLAP) oscillations at terahertz frequencies was demonstrated in InGaN multiple quantum wells (MQWs) by using wavelength degenerate time resolved differential transmission spectroscopy. Screening of the piezoelectric field in InGaN MQWs by photogenerated carriers upon femtosecond pulse excitation gave rise to terahertz ZFLAPs, which were monitored at the Brillouin zone center in the transmission geometry. MQWs composed of 10 pairs InxGa1-xN wells and In0.03Ga0.97N barriers provided coherent phonon frequencies of 0.69-0.80 THz depending on the period of MQWs. Dependences of ZFLAP amplitude on excitation density and wavelength were also investigated. Possibility of achieving phonon cavity, incorporating a MQW placed between two AlN/GaN phonon mirrors designed to exhibit large acoustic gaps at the zone center, was also explored.

Photonic qubits for remote quantum information processing

NASA Astrophysics Data System (ADS)

Maunz, P.; Olmschenk, S.; Hayes, D.; Matsukevich, D. N.; Duan, L.-M.; Monroe, C.

2009-05-01

Quantum information processing between remote quantum memories relies on a fast and faithful quantum channel. Recent experiments employed both, the photonic polarization and frequency qubits, in order to entangle remote atoms [1, 2], to teleport quantum information [3] and to operate a quantum gate between distant atoms. Here, we compare the dierent schemes used in these experiments and analyze the advantages of the dierent choices of atomic and photonic qubits and their coherence properties. [4pt] [1] D. L. Moehring et al. Nature 449, 68 (2007).[0pt] [2] D. N. Matsukevich et al. Phys. Rev. Lett. 100, 150404 2008).[0pt] [3] S. Olmschenk et al. Science, 323, 486 (2009).

PREFACE: Quantum Information, Communication, Computation and Cryptography

NASA Astrophysics Data System (ADS)

Benatti, F.; Fannes, M.; Floreanini, R.; Petritis, D.

2007-07-01

The application of quantum mechanics to information related fields such as communication, computation and cryptography is a fast growing line of research that has been witnessing an outburst of theoretical and experimental results, with possible practical applications. On the one hand, quantum cryptography with its impact on secrecy of transmission is having its first important actual implementations; on the other hand, the recent advances in quantum optics, ion trapping, BEC manipulation, spin and quantum dot technologies allow us to put to direct test a great deal of theoretical ideas and results. These achievements have stimulated a reborn interest in various aspects of quantum mechanics, creating a unique interplay between physics, both theoretical and experimental, mathematics, information theory and computer science. In view of all these developments, it appeared timely to organize a meeting where graduate students and young researchers could be exposed to the fundamentals of the theory, while senior experts could exchange their latest results. The activity was structured as a school followed by a workshop, and took place at The Abdus Salam International Center for Theoretical Physics (ICTP) and The International School for Advanced Studies (SISSA) in Trieste, Italy, from 12-23 June 2006. The meeting was part of the activity of the Joint European Master Curriculum Development Programme in Quantum Information, Communication, Cryptography and Computation, involving the Universities of Cergy-Pontoise (France), Chania (Greece), Leuven (Belgium), Rennes1 (France) and Trieste (Italy). This special issue of Journal of Physics A: Mathematical and Theoretical collects 22 contributions from well known experts who took part in the workshop. They summarize the present day status of the research in the manifold aspects of quantum information. The issue is opened by two review articles, the first by G Adesso and F Illuminati discussing entanglement in continuous variable systems, the second by T Prosen, discussing chaos and complexity in quantum systems. Both topics have theoretical as well as experimental relevance and are likely to witness a fast growing development in the near future. The remaining contributions present more specific and very recent results. They involve the study of the structure of quantum states and their estimation (B Baumgartner et al, C King et al, S Olivares et al, D Petz et al and W van Dam et al), of entanglement generation and its quantification (G Brida et al, F Ciccarello et al, G Costantini et al, O Romero-Isart et al, D Rossini et al, A Serafini et al and D Vitali et al), of randomness related effects on entanglement behaviour (I Akhalwaya et al, O Dahlsten et al and L Viola et al), and of abstract and applied aspects of quantum computation and communication (K Audenart, G M D'Ariano et al, N Datta et al, L C Kwek et al and M Nathanson et al). We would like to express our gratitude to the European Commission, the Abdus Salam ICTP, SISSA and Eurotech SpA (Amaro, Udine, Italy) for financial and/or logistic support. Special thanks also go to the workshop secretary Marina De Comelli, and the secretaries of the Department of Theoretical Physics, University of Trieste, Sabrina Gaspardis and Rosita Glavina for their precious help and assistance.

Enhanced photoluminescence of corrugated Al2O3 film assisted by colloidal CdSe quantum dots.

PubMed

Bai, Zhongchen; Hao, Licai; Zhang, Zhengping; Huang, Zhaoling; Qin, Shuijie

2017-05-19

We present the enhanced photoluminescence (PL) of a corrugated Al 2 O 3 film enabled by colloidal CdSe quantum dots. The colloidal CdSe quantum dots are fabricated directly on a corrugated Al 2 O 3 substrate using an electrochemical deposition (ECD) method in a microfluidic system. The photoluminescence is excited by using a 150 nm diameter ultraviolet laser spot of a scanning near-field optical microscope. Owing to the electron transfer from the conduction band of the CdSe quantum dots to that of Al 2 O 3 , the enhanced photoluminescence effect is observed, which results from the increase in the recombination rate of electrons and holes on the Al 2 O 3 surface and the reduction in the fluorescence of the CdSe quantum dots. A periodically-fluctuating fluorescent spectrum was exhibited because of the periodical wire-like corrugated Al 2 O 3 surface serving as an optical grating. The spectral topographic map around the fluorescence peak from the Al 2 O 3 areas covered with CdSe quantum dots was unique and attributed to the uniform deposition of CdSe QDs on the corrugated Al 2 O 3 surface. We believe that the microfluidic ECD system and the surface enhanced fluorescence method described in this paper have potential applications in forming uniform optoelectronic films of colloidal quantum dots with controllable QD spacing and in boosting the fluorescent efficiency of weak PL devices.

Dot-in-Well Quantum-Dot Infrared Photodetectors

NASA Technical Reports Server (NTRS)

Gunapala, Sarath; Bandara, Sumith; Ting, David; Hill, cory; Liu, John; Mumolo, Jason; Chang, Yia Chung

2008-01-01

Dot-in-well (DWELL) quantum-dot infrared photodetectors (QDIPs) [DWELL-QDIPs] are subjects of research as potentially superior alternatives to prior QDIPs. Heretofore, there has not existed a reliable method for fabricating quantum dots (QDs) having precise, repeatable dimensions. This lack has constituted an obstacle to the development of uniform, high-performance, wavelength-tailorable QDIPs and of focal-plane arrays (FPAs) of such QDIPs. However, techniques for fabricating quantum-well infrared photodetectors (QWIPs) having multiple-quantum- well (MQW) structures are now well established. In the present research on DWELL-QDIPs, the arts of fabrication of QDs and QWIPs are combined with a view toward overcoming the deficiencies of prior QDIPs. The longer-term goal is to develop focal-plane arrays of radiationhard, highly uniform arrays of QDIPs that would exhibit high performance at wavelengths from 8 to 15 m when operated at temperatures between 150 and 200 K. Increasing quantum efficiency is the key to the development of competitive QDIP-based FPAs. Quantum efficiency can be increased by increasing the density of QDs and by enhancing infrared absorption in QD-containing material. QDIPs demonstrated thus far have consisted, variously, of InAs islands on GaAs or InAs islands in InGaAs/GaAs wells. These QDIPs have exhibited low quantum efficiencies because the numbers of QD layers (and, hence, the areal densities of QDs) have been small typically five layers in each QDIP. The number of QD layers in such a device must be thus limited to prevent the aggregation of strain in the InAs/InGaAs/GaAs non-lattice- matched material system. The approach being followed in the DWELL-QDIP research is to embed In- GaAs QDs in GaAs/AlGaAs multi-quantum- well (MQW) structures (see figure). This material system can accommodate a large number of QD layers without excessive lattice-mismatch strain and the associated degradation of photodetection properties. Hence, this material system is expected to enable achievement of greater densities of QDs and correspondingly greater quantum efficiencies. The host GaAs/AlGaAs MQW structures are highly compatible with mature fabrication processes that are now used routinely in making QWIP FPAs. The hybrid InGaAs-dot/GaAs/AlGaAs-well system also offers design advantages in that the effects of variability of dot size can be partly compensated by engineering quantum-well sizes, which can be controlled precisely.

Improved charge trapping properties by embedded graphene oxide quantum-dots for flash memory application

NASA Astrophysics Data System (ADS)

Jia, Xinlei; Yan, Xiaobing; Wang, Hong; Yang, Tao; Zhou, Zhenyu; Zhao, Jianhui

2018-06-01

In this work, we have investigated two kinds of charge trapping memory devices with Pd/Al2O3/ZnO/SiO2/p-Si and Pd/Al2O3/ZnO/graphene oxide quantum-dots (GOQDs)/ZnO/SiO2/p-Si structure. Compared with the single ZnO sample, the memory window of the ZnO-GOQDs-ZnO sample reaches a larger value (more than doubled) of 2.7 V under the sweeping gate voltage ± 7 V, indicating a better charge storage capability and the significant charge trapping effects by embedding the GOQDs trapping layer. The ZnO-GOQDs-ZnO devices have better date retention properties with the high and low capacitances loss of ˜ 1.1 and ˜ 6.9%, respectively, as well as planar density of the trapped charges of 1.48 × 1012 cm- 2. It is proposed that the GOQDs play an important role in the outstanding memory characteristics due to the deep quantum potential wells and the discrete distribution of the GOQDs. The long date retention time might have resulted from the high potential barrier which suppressed both the back tunneling and the leakage current. Intercalating GOQDs in the memory device is a promising method to realize large memory window, low-power consumption and excellent retention properties.

Energy-loss cross sections for inclusive charge-exchange reactions at intermediate energies

NASA Technical Reports Server (NTRS)

Cucinotta, Francis A.; Townsend, Lawrence W.; Dubey, Rajendra R.

1993-01-01

Charge-exchange reactions for scattering to the continuum are considered in a high-energy multiple scattering model. Calculations for (p,n) and (He-3,H-3) reactions are made and compared with experimental results for C-12, O-16, and Al-27 targets. Coherent effects are shown to lead to an important role for inelastic multiple scattering terms when light projectiles are considered.

Radiation hard blocked tunneling band {GaAs}/{AlGaAs} superlattice long wavelength infrared detectors

NASA Astrophysics Data System (ADS)

Wu, C. S.; Wen, C. P.; Reiner, P.; Tu, C. W.; Hou, H. Q.

1996-09-01

We have developed a novel multiple quantum well (MQW) long wavelength infrared (LWIR) detector which can operate in a photovoltaic detection mode with an intrinsic event discrimination (IED) capability. The detector was constructed using the {GaAs}/{AlGaAs} MQW technology to form a blocked tunneling band superlattice structure with a 10.2 micron wavelength and 2.2 micron bandwidth. The detector exhibited Schottky junction and photovoltaic detection characteristics with extremely low dark current and low noise as a result of a built-in tunneling current blocking layer structure. In order to enhance quantum efficiency, a built-in electric field was created by grading the doping concentration of each quantum well in the MQW region. The peak responsivity of the detector was 0.4 amps/W with a measured detectivity of 6.0 × 10 11 Jones. The external quantum efficiency was measured to be 4.4%. The detector demonstrated an excellent intrinsic event discrimination capability due to the presence of a p-type GaAs hole collector layer, which was grown on top of the n-type electron emitter region of the MQW detector. The best results show that an infrared signal which is as much as 100 times smaller than coincident nuclear radiation induced current can be distinguished and extracted from the noise signal. With this hole collector structure, our detector also demonstrated two-color detection.

276 nm Substrate-Free Flip-Chip AlGaN Light-Emitting Diodes

NASA Astrophysics Data System (ADS)

Hwang, Seongmo; Morgan, Daniel; Kesler, Amanda; Lachab, Mohamed; Zhang, Bin; Heidari, Ahmad; Nazir, Haseeb; Ahmad, Iftikhar; Dion, Joe; Fareed, Qhalid; Adivarahan, Vinod; Islam, Monirul; Khan, Asif

2011-03-01

Lateral-conduction, substrate-free flip-chip (SFFC) light-emitting diodes (LEDs) with peak emission at 276 nm are demonstrated for the first time. The AlGaN multiple quantum well LED structures were grown by metal-organic chemical vapor deposition (MOCVD) on thick-AlN laterally overgrown on sapphire substrates. To fabricate the SFFC LEDs, a newly-developed laser-assisted ablation process was employed to separate the substrate from the LED chips. The chips had physical dimensions of 1100×900 µm2, and were comprised of four devices each with a 100×100 µm2 junction area. Electrical and optical characterization of the devices revealed no noticeable degradation to their performance due to the laser-lift-off process.

Excitonic complexes in single zinc-blende GaN/AlN quantum dots grown by droplet epitaxy

DOE Office of Scientific and Technical Information (OSTI.GOV)

Sergent, S.; Kako, S.; Bürger, M.

2014-10-06

We study by microphotoluminescence the optical properties of single zinc-blende GaN/AlN quantum dots grown by droplet epitaxy. We show evidences of both excitonic and multiexcitonic recombinations in individual quantum dots with radiative lifetimes shorter than 287 ± 8 ps. Owing to large band offsets and a large exciton binding energy, the excitonic recombinations of single zinc-blende GaN/AlN quantum dots can be observed up to 300 K.

Proceedings of the 9th International Symposium on Foundations of Quantum Mechanics in the Light of New Technology

NASA Astrophysics Data System (ADS)

Ishioka, Sachio; Fujikawa, Kazuo

2009-06-01

Committee -- Obituary: Professor Sadao Nakajima -- Opening address / H. Fukuyama -- Welcoming address / N. Osakabe -- Cold atoms and molecules. Pseudopotential method in cold atom research / C. N. Yang. Symmetry breaking in Bose-Einstein condensates / M. Ueda. Quantized vortices in atomic Bose-Einstein condensates / M. Tsubota. Quantum degenerate gases of Ytterbium atoms / S. Uetake ... [et al.]. Superfluid properties of an ultracold fermi gas in the BCS-BEC crossover region / Y. Ohashi, N. Fukushima. Fermionic superfluidity and the BEC-BCS crossover in ultracold atomic fermi gases / M. W. Zwierlein. Kibble-Zurek mechanism in magnetization of a spinor Bose-Einstein condensate / H. Saito, Y. Kawaguchi, M. Ueda. Quasiparticle inducing Josephson effect in a Bose-Einstein condensate / S. Tsuchiya, Y. Ohashi. Stability of superfluid fermi gases in optical lattices / Y. Yunomae ... [et al.]. Z[symbol] symmetry breaking in multi-band bosonic atoms confined by a two-dimensional harmonic potential / M. Sato, A. Tokuno -- Spin hall effect and anomalous hall effect. Recent advances in anomalous hall effect and spin hall effect / N. Nagaosa. Topological insulators and the quantum spin hall effect / C. L. Kane. Application of direct and inverse spin-hall effects: electric manipulation of spin relaxation and electric detection of spin currents / K. Ando, E. Saitoh. Novel current pumping mechanism by spin dynamics / A. Takeuchi, K. Hosono, G. Tatara. Quantum spin hall phase in bismuth ultrathin film / S. Murakami. Anomalous hall effect due to the vector chirality / K. Taguchi, G. Tatara. Spin current distributions and spin hall effect in nonlocal magnetic nanostructures / R. Sugano ... [et al.]. New boundary critical phenomenon at the metal-quantum spin hall insulator transition / H. Obuse. On scaling behaviors of anomalous hall conductivity in disordered ferromagnets studied with the coherent potential approximation / S. Onoda -- Magnetic domain wall dynamics and spin related phenomena. Dynamical magnetoelectric effects in multiferroics / Y. Tokura. Exchange-stabilization of spin accumulation in the two-dimensional electron gas with Rashba-type of spin-orbit interaction / H. M. Saarikoski, G. E. W. Bauer. Electronic Aharonov-Casher effect in InGaAs ring arrays / J. Nitta, M. Kohda, T. Bergsten. Microscopic theory of current-spin interaction in ferromagnets / H. Kohno ... [et al.]. Spin-polarized carrier injection effect in ferromagnetic semiconductor / diffusive semiconductor / superconductor junctions / H. Takayanagi ... [et al.]. Low voltage control of ferromagnetism in a semiconductor P-N junction / J. Wunderlich ... [et al.].Measurement of nanosecond-scale spin-transfer torque magnetization switching / K. Ito ... [et al.]. Current-induced domain wall creep in magnetic wires / J. Ieda, S. Maekawa, S. E. Barnes. Pure spin current injection into superconducting niobium wire / K. Ohnishi, T. Kimura, Y. Otani. Switching of a single atomic spin induced by spin injection: a model calculation / S. Kokado, K. Harigaya, A. Sakuma. Spin transfer torque in magnetic tunnel junctions with synthetic ferrimagnetic layers / M. Ichimura ... [et al.]. Gapless chirality excitations in one-dimensional spin-1/2 frustrated magnets / S. Furukawa ... [et al.] -- Dirac fermions in condensed matter. Electronic states of graphene and its multi-layers / T. Ando, M. Koshino. Inter-layer magnetoresistance in multilayer massless dirac fermions system [symbol]-(BEDT-TTF)[symbol]I[symbol] / N. Tajima ... [et al.]. Theory on electronic properties of gapless states in molecular solids [symbol]-(BEDT-TTF)[symbol]I[symbol] / A. Kobayashi, Y. Suzumura, H. Fukuyama. Hall effect and diamagnetism of bismuth / Y. Fuseya, M. Ogata, H. Fukuyama. Quantum Nernst effect in a bismuth single crystal / M. Matsuo ... [et al.] -- Quantum dot systems. Kondo effect and superconductivity in single InAs quantum dots contacted with superconducting leads / S. Tarucha ... [et al.]. Electron transport through a laterally coupled triple quantum dot forming Aharonov-Bohm interferometer / T. Kubo ... [et al.]. Aharonov-Bohm oscillations in parallel coupled vertical double quantum dot / T. Hatano ... [et al.]. Laterally coupled triple self-assembled quantum dots / S. Amaha ... [et al.]. Spectroscopy of charge states of a superconducting single-electron transistor in an engineered electromagnetic environment / E. Abe ... [et al.]. Numerical study of the coulomb blockade in an open quantum dot / Y. Hamamoto, T. Kato. Symmetry in the full counting statistics, the fluctuation theorem and an extension of the Onsager theorem in nonlinear transport regime / Y. Utsumi, K. Saito. Single-artificial-atom lasing and its suppression by strong pumping / J. R. Johansson ... [et al.] -- Entanglement and quantum information processing, qubit manipulations. Photonic entanglement in quantum communication and quantum computation / A. Zeilinger. Quantum non-demolition measurement of a superconducting flux qubit / J. E. Mooij. Atomic physics and quantum information processing with superconducting circuits / F. Nori. Theory of macroscopic quantum dynamics in high-T[symbol] Josephson junctions / S. Kawabata. Silicon isolated double quantum-dot qubit architectures / D. A. Williams ... [et al.]. Controlled polarisation of silicon isolated double quantum dots with remote charge sensing for qubit use / M. G. Tanner ... [et al.].Modelling of charge qubits based on Si/SiO[symbol] double quantum dots / P. Howard, A. D. Andreev, D. A. Williams. InAs based quantum dots for quantum information processing: from fundamental physics to 'plug and play' devices / X. Xu ... [et al.]. Quantum aspects in superconducting qubit readout with Josephson bifurcation amplifier / H. Nakano ... [et al.]. Double-loop Josephson-junction flux qubit with controllable energy gap / Y. Shimazu, Y. Saito, Z. Wada. Noise characteristics of the Fano effect and Fano-Kondo effect in triple quantum dots, aiming at charge qubit detection / T. Tanamoto, Y. Nishi, S. Fujita. Geometric universal single qubit operation of cold two-level atoms / H. Imai, A. Morinaga. Entanglement dynamics in quantum Brownian motion / K. Shiokawa. Coupling superconducting flux qubits using AC magnetic flxues / Y. Liu, F. Nori. Entanglement purification using natural spin chain dynamics and single spin measurements / K. Maruyama, F. Nori. Experimental analysis of spatial qutrit entanglement of down-converted photon pairs / G. Taguchi ... [et al.]. On the phase sensitivity of two path interferometry using path-symmetric N-photon states / H. F. Hofmann. Control of multi-photon coherence using the mixing ratio of down-converted photons and weak coherent light / T. Ono, H. F. Hofmann -- Mechanical properties of confined geometry. Rattling as a novel anharmonic vibration in a solid / Z. Hiroi, J. Yamaura. Micro/nanomechanical systems for information processing / H. Yamaguchi, I. Mahboob -- Precise measurements. Electron phase microscopy for observing superconductivity and magnetism / A. Tonomura. Ratio of the Al[symbol] and Hg[symbol] optical clock frequencies to 17 decimal places / W. M. Itano ... [et al.]. STM and STS observation on titanium-carbide metallofullerenes: [symbol] / N. Fukui ... [et al.]. Single shot measurement of a silicon single electron transistor / T. Ferrus ... [et al.]. Derivation of sensitivity of a Geiger mode APDs detector from a given efficiency to estimate total photon counts / K. Hammura, D. A. Williams -- Novel properties in nano-systems. First principles study of electroluminescence in ultra-thin silicon film / Y. Suwa, S. Saito. First principles nonlinear optical spectroscopy / T. Hamada, T. Ohno. Field-induced disorder and carrier localization in molecular organic transistors / M. Ando ... [et al.]. Switching dynamics in strongly coupled Josephson junctions / H. Kashiwaya ... [et al.]. Towards quantum simulation with planar coulomb crystals / I. M. Buluta, S. Hasegawa -- Fundamental problems in quantum physics. The negative binomial distribution in quantum physics / J. Söderholm, S. Inoue. On the elementary decay process / D. Kouznetsov -- List of participants.

Laterally Coupled Quantum-Dot Distributed-Feedback Lasers

NASA Technical Reports Server (NTRS)

Qui, Yueming; Gogna, Pawan; Muller, Richard; Maker, paul; Wilson, Daniel; Stintz, Andreas; Lester, Luke

2003-01-01

InAs quantum-dot lasers that feature distributed feedback and lateral evanescent- wave coupling have been demonstrated in operation at a wavelength of 1.3 m. These lasers are prototypes of optical-communication oscillators that are required to be capable of stable single-frequency, single-spatial-mode operation. A laser of this type (see figure) includes an active layer that comprises multiple stacks of InAs quantum dots embedded within InGaAs quantum wells. Distributed feedback is provided by gratings formed on both sides of a ridge by electron lithography and reactive-ion etching on the surfaces of an AlGaAs/GaAs waveguide. The lateral evanescent-wave coupling between the gratings and the wave propagating in the waveguide is strong enough to ensure operation at a single frequency, and the waveguide is thick enough to sustain a stable single spatial mode. In tests, the lasers were found to emit continuous-wave radiation at temperatures up to about 90 C. Side modes were found to be suppressed by more than 30 dB.

Pulsed Rabi oscillations in quantum two-level systems: beyond the area theorem

NASA Astrophysics Data System (ADS)

Fischer, Kevin A.; Hanschke, Lukas; Kremser, Malte; Finley, Jonathan J.; Müller, Kai; Vučković, Jelena

2018-01-01

The area theorem states that when a short optical pulse drives a quantum two-level system, it undergoes Rabi oscillations in the probability of scattering a single photon. In this work, we investigate the breakdown of the area theorem as both the pulse length becomes non-negligible and for certain pulse areas. Using simple quantum trajectories, we provide an analytic approximation to the photon emission dynamics of a two-level system. Our model provides an intuitive way to understand re-excitation, which elucidates the mechanism behind the two-photon emission events that can spoil single-photon emission. We experimentally measure the emission statistics from a semiconductor quantum dot, acting as a two-level system, and show good agreement with our simple model for short pulses. Additionally, the model clearly explains our recent results (Fischer and Hanschke 2017 et al Nat. Phys.) showing dominant two-photon emission from a two-level system for pulses with interaction areas equal to an even multiple of π.

77 FR 27763 - Quantum Choctaw Power, LLC, USG Nevada LLC, et al.; Notice of Effectiveness of Exempt Wholesale...

Federal Register 2010, 2011, 2012, 2013, 2014

2012-05-11

... DEPARTMENT OF ENERGY Federal Energy Regulatory Commission [Docket Nos. EG12-31-000; EG12-32-000; et al.] Quantum Choctaw Power, LLC, USG Nevada LLC, et al.; Notice of Effectiveness of Exempt Wholesale Generator Status Docket Nos. Quantum Choctaw Power, LLC EG12-31-000 USG Nevada LLC EG12-32-000...

Improvement of "Novel Multiparty Quantum Key Agreement Protocol with GHZ States"

NASA Astrophysics Data System (ADS)

Gu, Jun; Hwang, Tzonelih

2017-10-01

Quantum key agreement (QKA) protocol is a method for negotiating a fair and secure key among mutually untrusted participants. Recently, Xu et al. (Quantum Inf. Process. 13:2587-2594, 2014) proposed a multi-party QKA protocol based on Greenberger-Horne-Zeilinger (GHZ) states. However, this study points out that Xu et al.'s protocol cannot provide the fairness property. That is, the last involved participant in the protocol can manipulate the final shared secret key without being detected by the other participants. Moreover, according to Yu et al.'s research (2015), Xu et al.'s protocol cannot avoid the public discussion attack too. To avoid these weaknesses, an improved QKA protocol is proposed.

Resolution enhancement using a new multiple-pulse decoupling sequence for quadrupolar nuclei.

PubMed

Delevoye, L; Trébosc, J; Gan, Z; Montagne, L; Amoureux, J-P

2007-05-01

A new decoupling composite pulse sequence is proposed to remove the broadening on spin S=1/2 magic-angle spinning (MAS) spectra arising from the scalar coupling with a quadrupolar nucleus I. It is illustrated on the (31)P spectrum of an aluminophosphate, AlPO(4)-14, which is broadened by the presence of (27)Al/(31)P scalar couplings. The multiple-pulse (MP) sequence has the advantage over the continuous wave (CW) irradiation to efficiently annul the scalar dephasing without reintroducing the dipolar interaction. The MP decoupling sequence is first described in a rotor-synchronised version (RS-MP) where one parameter only needs to be adjusted. It clearly avoids the dipolar recoupling in order to achieve a better resolution than using the CW sequence. In a second improved version, the MP sequence is experimentally studied in the vicinity of the perfect rotor-synchronised conditions. The linewidth at half maximum (FWHM) of 65 Hz using (27)Al CW decoupling decreases to 48 Hz with RS-MP decoupling and to 30 Hz with rotor-asynchronised MP (RA-MP) decoupling. The main phenomena are explained using both experimental results and numerical simulations.

Auger heating of carriers in {GaAs}/{AlAs} heterostructures

NASA Astrophysics Data System (ADS)

Borri, P.; Ceccherini, S.; Gurioli, M.; Bogani, F.

1997-07-01

The photoluminescence of {GaAs}/{AlAs} multiple quantum wells structures under optical ps excitation is investigated for carrier densities in the range 10 18-4 × 10 19 cm -3 with frequency and time-resolved spectroscopic techniques. The measurements give a direct evidence of the occurrence in the sample of carrier heating. This energy up-conversion gives rise to photoluminescence from the states near the Fermi level whose intensity and time evolution depend on the carrier density in a strongly non-linear way. The observed behaviour can be explained introducing in the carrier dynamics an up-conversion mechanism due to Auger-like processes.

Fast separation of two trapped ions (Open Access, Publisher’s Version)

DTIC Science & Technology

2015-09-17

of quantum states and separation of ions in a dual rf ion trapQuantum Inf. Comput . 2 257 [10] KaufmannH, Ruster T, SchmiegelowCT, Schmidt-Kaler F...Ruschhaupt et al. Shortcuts to adiabaticity for an ion in a rotating radially-tight trap M Palmero, Shuo Wang, D Guéry-Odelin et al. Optimal shortcuts for...Kiely, J P L McGuinness, J G Muga et al. Quantum simulations with cold trapped ions Michael Johanning, Andrés F Varón and Christof Wunderlich Quantum

Comment on "Quantum Teleportation of Eight-Qubit State via Six-Qubit Cluster State"

NASA Astrophysics Data System (ADS)

Sisodia, Mitali; Pathak, Anirban

2018-04-01

Recently, Zhao et al. (Int. J. Theor. Phys. 57, 516-522 2018) have proposed a scheme for quantum teleportation of an eight-qubit quantum state using a six qubit cluster state. In this comment, it's shown that the quantum resource (multi-partite entangled state used as the quantum channel) used by Zhao et al., is excessively high and the task can be performed using any two Bell states as the task can be reduced to the teleportation of an arbitrary two qubit state. Further, a trivial conceptual mistake made by Zhao et al., in the description of the quantum channel has been pointed out. It's also mentioned that recently a trend of proposing teleportation schemes with excessively high quantum resources has been observed and the essence of this comment is applicable to all such proposals.

Internal quantum efficiency in yellow-amber light emitting AlGaN-InGaN-GaN heterostructures

DOE Office of Scientific and Technical Information (OSTI.GOV)

Ngo, Thi Huong; Gil, Bernard; Valvin, Pierre

2015-09-21

We determine the internal quantum efficiency of strain-balanced AlGaN-InGaN-GaN hetero-structures designed for yellow-amber light emission, by using a recent model based on the kinetics of the photoluminescence decay initiated by Iwata et al. [J. Appl. Phys. 117, 075701 (2015)]. Our results indicate that low temperature internal quantum efficiencies sit in the 50% range and we measure that adding an AlGaN layer increases the internal quantum efficiency from 50% up to 57% with respect to the GaN-InGaN case. More dramatic, it almost doubles from 2.5% up to 4.3% at room temperature.

Mid-infrared Photoconductive Response in AlGaN/GaN Step Quantum Wells

PubMed Central

Rong, X.; Wang, X. Q.; Chen, G.; Zheng, X. T.; Wang, P.; Xu, F. J.; Qin, Z. X.; Tang, N.; Chen, Y. H.; Sang, L. W.; Sumiya, M.; Ge, W. K.; Shen, B.

2015-01-01

AlGaN/GaN quantum structure is an excellent candidate for high speed infrared detectors based on intersubband transitions. However, fabrication of AlGaN/GaN quantum well infrared detectors suffers from polarization-induced internal electric field, which greatly limits the carrier vertical transport. In this article, a step quantum well is proposed to attempt solving this problem, in which a novel spacer barrier layer is used to balance the internal electric field. As a result, a nearly flat band potential profile is obtained in the step barrier layers of the AlGaN/GaN step quantum wells and a bound-to-quasi-continuum (B-to-QC) type intersubband prototype device with detectable photocurrent at atmosphere window (3–5 μm) is achieved in such nitride semiconductors. PMID:26395756

Mid-infrared multiple quantum well lasers using digitally-grown aluminum indium arsenic antimonide barriers and strained indium arsenic antimonide wells

NASA Astrophysics Data System (ADS)

Vaughn, Leslie G.

2006-04-01

AlxIn(1-x)AsySb(1-y) quaternary alloys have been used in Type I midwave infrared (MWIR) laser structures as barrier materials with InAs and InAsSb quantum wells. However, growth of these alloys has limited the application because of a large miscibility gap. In this research, quaternary films with compositions well into the miscibility gap (0 ≤ x ≤ 0.50) have been grown for the first time by molecular beam epitaxy (MBE) using a digital alloy technique. These films, lattice-matched to GaSb, have been characterized using double crystal X-ray diffraction (DCXRD), transmission electron microscopy (TEM), and photoluminescence (PL). Results indicate uniform, single-phase, and highly crystalline films. Using PL data, the dependence of the quaternary bandgap on composition has been studied and fit to various theoretical models. Combining the quaternary bandgap equation with strain and quantum size effects, the wavelengths for strained InAsSb wells in AlInAsSb quaternary barriers are predicted and compared to measured values generated from PL experiments. The reasonable agreement of these experimental results with the theoretical model supports the assertion that the AlInAsSb/InAsSb material system is Type I and emits in the target wavelength range of 3.3-4.2 mum. PL spectra of AlInAsSb/InAsSb multiple quantum wells exhibit a substantial increase in intensity with increasing quaternary aluminum content. This is presumably due to increasing valence band offset and, therefore, to better hole confinement. A laser with this active region has been fabricated and tested. Under pulsed optical pumping conditions at 50K, the laser emitted light at ˜3.93 mum. Further work has been done using the digital alloy technique to add gallium to the quaternary alloy to produce an AlGaInAsSb quinary alloy lattice-matched to GaSb. This material is of specific interest for mid-infrared lasers because by adding the fifth element, gallium, the range of material properties is extended. There is some indication from PL testing that the addition of the fifth element may contribute to Auger recombination suppression and may lead to higher operating temperatures. DCXRD and TEM of these quinary alloys give results similar to the quaternary alloys. The stable, single-phase growth of these quinary alloys shows promise for improving the performance of MWIR lasers.

Quantum Bio-Informatics II From Quantum Information to Bio-Informatics

NASA Astrophysics Data System (ADS)

Accardi, L.; Freudenberg, Wolfgang; Ohya, Masanori

2009-02-01

The problem of quantum-like representation in economy cognitive science, and genetics / L. Accardi, A. Khrennikov and M. Ohya -- Chaotic behavior observed in linea dynamics / M. Asano, T. Yamamoto and Y. Togawa -- Complete m-level quantum teleportation based on Kossakowski-Ohya scheme / M. Asano, M. Ohya and Y. Tanaka -- Towards quantum cybernetics: optimal feedback control in quantum bio informatics / V. P. Belavkin -- Quantum entanglement and circulant states / D. Chruściński -- The compound Fock space and its application in brain models / K. -H. Fichtner and W. Freudenberg -- Characterisation of beam splitters / L. Fichtner and M. Gäbler -- Application of entropic chaos degree to a combined quantum baker's map / K. Inoue, M. Ohya and I. V. Volovich -- On quantum algorithm for multiple alignment of amino acid sequences / S. Iriyama and M. Ohya --Quantum-like models for decision making in psychology and cognitive science / A. Khrennikov -- On completely positive non-Markovian evolution of a d-level system / A. Kossakowski and R. Rebolledo -- Measures of entanglement - a Hilbert space approach / W. A. Majewski -- Some characterizations of PPT states and their relation / T. Matsuoka -- On the dynamics of entanglement and characterization ofentangling properties of quantum evolutions / M. Michalski -- Perspective from micro-macro duality - towards non-perturbative renormalization scheme / I. Ojima -- A simple symmetric algorithm using a likeness with Introns behavior in RNA sequences / M. Regoli -- Some aspects of quadratic generalized white noise functionals / Si Si and T. Hida -- Analysis of several social mobility data using measure of departure from symmetry / K. Tahata ... [et al.] -- Time in physics and life science / I. V. Volovich -- Note on entropies in quantum processes / N. Watanabe -- Basics of molecular simulation and its application to biomolecules / T. Ando and I. Yamato -- Theory of proton-induced superionic conduction in hydrogen-bonded systems / H. Kamimura -- Massive collection of full-length complementary DNA clones and microarray analyses: keys to rice transcriptome analysis / S. Kikuchi -- Changes of influenza A(H5) viruses by means of entropic chaos degree / K. Sato and M. Ohya -- Basics of genome sequence analysis in bioinformatics - its fundamental ideas and problems / T. Suzuki and S. Miyazaki -- A basic introduction to gene expression studies using microarray expression data analysis / D. Wanke and J. Kilian -- Integrating biological perspectives: a quantum leap for microarray expression analysis / D. Wanke ... [et al.].

Photoluminescence from narrow InAs-AlSb quantum wells

NASA Technical Reports Server (NTRS)

Brar, Berinder; Kroemer, Herbert; Ibbetson, James; English, John H.

1993-01-01

We report on photoluminescence spectra from narrow InAs-AlSb quantum wells. Strong, clearly resolved peaks for well widths from 2 to 8 monolayers were observed. Transmission electron micrographs show direct evidence for the structural quality of the quantum well structures. The transition energies of the narrowest wells suggest a strong influence of the AlSb X-barrier on the electronic states in the conduction band.

The decay of hot nuclei formed in La-induced reactions at E/A=45 MeV

DOE Office of Scientific and Technical Information (OSTI.GOV)

Libby, Bruce

1993-01-01

The decay of hot nuclei formed in the reactions 139La + 27Al, 51V, natCu, and 139La were studied by the coincident detection of up to four complex fragments (Z > 3) emitted in these reactions. Fragments were characterized as to their atomic number, energy and in- and out-of-plane angles. The probability of the decay by an event of a given complex fragment multiplicity as a function of excitation energy per nucleon of the source is nearly independent of the system studied. Additionally, there is no large increase in the proportion of multiple fragment events as the excitation energy of themore » source increases past 5 MeV/nucleon. This is at odds with many prompt multifragmentation models of nuclear decay. The reactions 139La + 27Al, 51V, natCu were also studied by combining a dynamical model calculation that simulates the early stages of nuclear reactions with a statistical model calculation for the latter stages of the reactions. For the reaction 139La + 27Al, these calculations reproduced many of the experimental features, but other features were not reproduced. For the reaction 139La + 51V, the calculation failed to reproduce somewhat more of the experimental features. The calculation failed to reproduce any of the experimental features of the reaction 139La + natCu, with the exception of the source velocity distributions.« less

The decay of hot nuclei formed in La-induced reactions at E/A=45 MeV

DOE Office of Scientific and Technical Information (OSTI.GOV)

Libby, B.

1993-01-01

The decay of hot nuclei formed in the reactions [sup 139]La + [sup 27]Al, [sup 51]V, [sup nat]Cu, and [sup 139]La were studied by the coincident detection of up to four complex fragments (Z > 3) emitted in these reactions. Fragments were characterized as to their atomic number, energy and in- and out-of-plane angles. The probability of the decay by an event of a given complex fragment multiplicity as a function of excitation energy per nucleon of the source is nearly independent of the system studied. Additionally, there is no large increase in the proportion of multiple fragment events asmore » the excitation energy of the source increases past 5 MeV/nucleon. This is at odds with many prompt multifragmentation models of nuclear decay. The reactions [sup 139]La + [sup 27]Al, [sup 51]V, [sup nat]Cu were also studied by combining a dynamical model calculation that simulates the early stages of nuclear reactions with a statistical model calculation for the latter stages of the reactions. For the reaction [sup 139]La + [sup 27]Al, these calculations reproduced many of the experimental features, but other features were not reproduced. For the reaction [sup 139]La + [sup 51]V, the calculation failed to reproduce somewhat more of the experimental features. The calculation failed to reproduce any of the experimental features of the reaction [sup 139]La + [sup nat]Cu, with the exception of the source velocity distributions.« less

An Efficient and Secure Arbitrary N-Party Quantum Key Agreement Protocol Using Bell States

NASA Astrophysics Data System (ADS)

Liu, Wen-Jie; Xu, Yong; Yang, Ching-Nung; Gao, Pei-Pei; Yu, Wen-Bin

2018-01-01

Two quantum key agreement protocols using Bell states and Bell measurement were recently proposed by Shukla et al. (Quantum Inf. Process. 13(11), 2391-2405, 2014). However, Zhu et al. pointed out that there are some security flaws and proposed an improved version (Quantum Inf. Process. 14(11), 4245-4254, 2015). In this study, we will show Zhu et al.'s improvement still exists some security problems, and its efficiency is not high enough. For solving these problems, we utilize four Pauli operations { I, Z, X, Y} to encode two bits instead of the original two operations { I, X} to encode one bit, and then propose an efficient and secure arbitrary N-party quantum key agreement protocol. In the protocol, the channel checking with decoy single photons is introduced to avoid the eavesdropper's flip attack, and a post-measurement mechanism is used to prevent against the collusion attack. The security analysis shows the present protocol can guarantee the correctness, security, privacy and fairness of quantum key agreement.

An elegant route to overcome fundamentally-limited light extraction in AlGaN deep-ultraviolet light-emitting diodes: preferential outcoupling of strong in-plane emission (Conference Presentation)

NASA Astrophysics Data System (ADS)

Kim, Jong Kyu; Lee, Jong Won; Kim, Dong-Yeong; Park, Jun Hyuk; Schubert, E. Fred; Kim, Jungsub; Kim, Yong-Il

2016-09-01

AlGaN-based deep ultraviolet (DUV) light-emitting diodes (LEDs) are being developed for their numerous applications such as purification of air and water, sterilization in food processing, UV curing, medical-, and defense-related light sources. However, external quantum efficiency (EQE) of AlGaN-based DUV LEDs is very poor (<5% for 250nm) particularly due to low hole concentration and light extraction efficiency (LEE). Conventional LEE-enhancing techniques used for GaInN-based visible LEDs turned out to be ineffective for DUV LEDs due to difference in intrinsic material property between GaInN and AlGaN (Al< 30%). Unlike GaInN visible LEDs, DUV light from a high Al-content AlGaN active region is strongly transverse-magnetic (TM) polarized, that is, the electric field vector is parallel to the (0001) c-axis and shows strong sidewall emission through m- or a-plane due to crystal-field split-off hole band being top most valence band. Therefore, a new LEE-enhancing approach addressing the unique intrinsic property of AlGaN DUV LEDs is strongly desired. In this study, an elegant approach based on a DUV LED having multiple mesa stripes whose inclined sidewalls are covered by a MgF2/Al omni-directional mirror to take advantage of the strongly anisotropic transverse-magnetic polarized emission pattern of AlGaN quantum wells is presented. The sidewall-emission-enhanced DUV LED breaks through the fundamental limitations caused by the intrinsic properties of AlGaN, thus shows a remarkable improvement in light extraction as well as operating voltage simultaneously. Furthermore, an analytic model is developed to understand and precisely estimate the extraction of DUV photons from AlGaN DUV LEDs, and hence to provide promising routes to maximize the power conversion efficiency.

EDITORIAL: Quantum control theory for coherence and information dynamics Quantum control theory for coherence and information dynamics

NASA Astrophysics Data System (ADS)

Viola, Lorenza; Tannor, David

2011-08-01

Precisely characterizing and controlling the dynamics of realistic open quantum systems has emerged in recent years as a key challenge across contemporary quantum sciences and technologies, with implications ranging from physics, chemistry and applied mathematics to quantum information processing (QIP) and quantum engineering. Quantum control theory aims to provide both a general dynamical-system framework and a constructive toolbox to meet this challenge. The purpose of this special issue of Journal of Physics B: Atomic, Molecular and Optical Physics is to present a state-of-the-art account of recent advances and current trends in the field, as reflected in two international meetings that were held on the subject over the last summer and which motivated in part the compilation of this volume—the Topical Group: Frontiers in Open Quantum Systems and Quantum Control Theory, held at the Institute for Theoretical Atomic, Molecular and Optical Physics (ITAMP) in Cambridge, Massachusetts (USA), from 1-14 August 2010, and the Safed Workshop on Quantum Decoherence and Thermodynamics Control, held in Safed (Israel), from 22-27 August 2010. Initial developments in quantum control theory date back to (at least) the early 1980s, and have been largely inspired by the well-established mathematical framework for classical dynamical systems. As the above-mentioned meetings made clear, and as the burgeoning body of literature on the subject testifies, quantum control has grown since then well beyond its original boundaries, and has by now evolved into a highly cross-disciplinary field which, while still fast-moving, is also entering a new phase of maturity, sophistication, and integration. Two trends deserve special attention: on the one hand, a growing emphasis on control tasks and methodologies that are specifically motivated by QIP, in addition and in parallel to applications in more traditional areas where quantum coherence is nevertheless vital (such as, for instance, quantum control of chemical reactions or high-resolution magnetic resonance spectroscopy); on the other hand, an unprecedented demand for close coupling between theory and experiment, with theoretical developments becoming more and more attuned to and driven by experimental advances as different quantum technologies continue to evolve at an impressive pace in the laboratory. Altogether, these two trends account for several of the recurrent themes in this volume, as well as in the current quantum control literature as a whole: namely, the quest for control strategies that can attain the highest degree of precision and robustness possible, while striving for efficiency and, ultimately, optimality in achieving the intended control task under realistic operational constraints. From a theory standpoint, this makes it imperative to take into account increasingly more realistic control settings; to assess the quantitative impact of limited control resources and/or system knowledge; and to provide a rigorous and general foundation for existing experimental approaches in order to further enhance applicability and performance. From an experimental standpoint, renewed emphasis is in turn placed on validating theoretical predictions and benchmarking performance, so that the limiting constraints can be singled out for additional theoretical analysis and guidance. This ongoing cross-talk is clearly reflected in this collection, which brings together theoreticians and experimentalists, with a significant fraction of the papers reporting on combined quantum control theory-experiment efforts. While a precise categorization would neither be possible nor desirable, contributions to this volume have been loosely grouped into five broad sections. This grouping has been made in the hope that connections between different problems and/or technical approaches will become more transparent, facilitating the transfer of concepts and methods. The special issue opens with a section devoted to open-loop control methods, with special emphasis on dynamical decoupling (DD), which is becoming an increasingly important tool for decoherence control at the physical 'quantum firmware' level. In addition to including original research results, the first two articles, by Brion et al and Biercuk et al, also serve to pedagogically review some background in their respective subjects. In particular, Brion et al revisit one of the conceptually simplest approaches to open-loop manipulation of both closed and open quantum systems, nonholonomic control, motivated by its broad applicability to QIP settings. A special instance of open-loop control based on sequences of (nearly) instantaneous `bang-bang' pulses is addressed by Biercuk et al, who reformulate the simplest DD scenario, suppression of phase decoherence in a single qubit, as a filter-design problem. Peng et al report on the implementation of 'concatenated' DD for arbitrary single-qubit decoherence in the context of nuclear magnetic resonance QIP. A dedicated analysis of the performance of different DD schemes in the presence of realistic pulse errors is given by Wang and Dobrovitski. DD is also one of the strategies used by Lucamarini et al to reduce polarization decoherence in a photon qubit. These authors additionally report on the use of active feedback to counter transmission noise, effectively setting the stage for the second section, which is centered on closed-loop control. Unlike in open-loop control, measurement is an essential ingredient in closed-loop schemes aimed at both reliably identifying features of the target quantum system and further modifying its dynamics. The importance of directly measuring the spectrum of the underlying system-environment coupling is stressed by Almog et al, who show how this knowledge is crucial, in particular, for predicting the performance of DD sequences in experiments and for optimizing performance. Riofrio et al address a weak-measurement protocol for implementing quantum state tomography, which is a necessary 'primitive' for inferring the target quantum state and thereby diagnosing the control performance. Next, the impact of realistic control and system imperfections in continuous-time Markovian feedback strategies for rapid state preparation is analyzed by Combes and Wiseman. A prominent role is played in the special issue by optimal control (OC) approaches, reflecting their central importance for quantum control and QIP. The OC contributions have been divided into two separate sections, depending on whether the target dynamics is modeled as Hamiltonian (section 3) or dissipative (section 4), respectively. The contribution by Beltrani et al deals with `control landscapes', which provide a foundation for analyzing the performance of numerical OC algorithms and their robustness against control errors. Specifically, this paper characterizes geometric properties of the control landscape, relevant to the optimal control of state-to-state transitions. Application of OC theory to the problem of population transfer and coherence enhancement in Λ-systems is studied by Kumar et al, whereas Goerz et al report on the OC-design of a high-fidelity controlled phase-gate in atomic qubits. The robustness of an OC solution is specifically addressed by Negretti et al, along with an approach for identifying easily implementable while still 'close-to-optimal' control pulses. Powerful relaxation-optimized OC schemes (based on so-called opengrape algorithms) for generating unitary target gates in the presence of known dissipation parameters are discussed by Schulte-Herbrüggen et al. Next, Lapert et al report on the problem of time-optimal control of spin-1/2 systems undergoing Bloch relaxation dynamics, highlighting the crucial role played by singular extremals in the control synthesis. Alternative approaches for optimized control of qubits exposed to various decoherence processes are developed by Esher et al and Xue et al, based on a perturbative 'bath-optimized' formalism and on numerical optimization via a genetic algorithm, respectively. Testifying to the richness of the field, the volume concludes with four contributions that address a diverse range of problems. The exploitation of properties of adiabatic quantum evolutions is common to the first two papers. In particular, Legthtas et al offer a rigorous explanation for the robustness of a control protocol, chirped pulsing, that is widely employed in 'adiabatic rapid passage' experiments, while Han et al present a theoretical framework for adiabatic Raman photo-association schemes relevant to ultracold atomic systems. In the context of cavity quantum electrodynamics, Montenegro and Orszag describe how to engineer a system of two atoms coupled to distant lossy cavities so that stable atomic entanglement is generated. Finally, still very little is known about the physical mechanisms that are responsible for and control the experimentally observed 'coherent' features of transport phenomena in biological systems. The last contribution by Alicki and Giraldi analyzes energy transport in dynamical systems that can be modeled as 'quantum networks', and points to this fascinating emerging frontier. It is our hope that the above papers may help readers to gain an overview of some of the main trends in current quantum control efforts, both theoretical and experimental. In closing, we take the opportunity to thank the organizations which sponsored the above-mentioned ITAMP Topical Group (the United States National Science Foundation and Harvard University) and the Safed Workshop (the Israeli Science Foundation, the Safed Scientific Workshop program, CECAM and ACAM). Last but not least our sincere gratitude goes to all of the contributors to the volume and the reviewers as well as the J. Phys. B staff, for their respective efforts in preparing the papers and ensuring the overall quality of this special issue.

Exciton dynamics in GaAs/(Al,Ga)As core-shell nanowires with shell quantum dots

NASA Astrophysics Data System (ADS)

Corfdir, Pierre; Küpers, Hanno; Lewis, Ryan B.; Flissikowski, Timur; Grahn, Holger T.; Geelhaar, Lutz; Brandt, Oliver

2016-10-01

We study the dynamics of excitons in GaAs/(Al,Ga)As core-shell nanowires by continuous-wave and time-resolved photoluminescence and photoluminescence excitation spectroscopy. Strong Al segregation in the shell of the nanowires leads to the formation of Ga-rich inclusions acting as quantum dots. At 10 K, intense light emission associated with these shell quantum dots is observed. The average radiative lifetime of excitons confined in the shell quantum dots is 1.7 ns. We show that excitons may tunnel toward adjacent shell quantum dots and nonradiative point defects. We investigate the changes in the dynamics of charge carriers in the shell with increasing temperature, with particular emphasis on the transfer of carriers from the shell to the core of the nanowires. We finally discuss the implications of carrier localization in the (Al,Ga)As shell for fundamental studies and optoelectronic applications based on core-shell III-As nanowires.

Preface: Heterostructure terahertz devices

NASA Astrophysics Data System (ADS)

Ryzhii, Victor

2008-08-01

The terahertz (THz) range of frequencies is borderline between microwave electronics and photonics. It corresponds to the frequency bands of molecular and lattice vibrations in gases, fluids, and solids. The importance of the THz range is in part due to numerous potential and emerging applications which include imaging and characterization, detection of hazardous substances, environmental monitoring, radio astronomy, covert inter-satellite communications, as well as biological and medical applications. During the last decades marked progress has been achieved in the development, fabrication, and practical implementation of THz devices and systems. This is primarily owing to the utilization of gaseous and free electron lasers and frequency converters using nonlinear optical phenomena as sources of THz radiation. However, such devices and hence the systems based on them are fairly cumbersome. This continuously stimulates an extensive search for new compact and efficient THz sources based on semiconductor heterostructures. Despite tremendous efforts lasting several decades, the so-called THz gap unbridged by semiconductor heterostructure electron and optoelectron devices still exists providing appropriate levels of power of the generated THz radiation. The invention and realization of quantum cascade lasers made of multiple quantum-well heterostructures already resulted in the partial solution of the problem in question, namely, in the successful coverage of the high-frequency portion of the THz gap (2-3 THz and higher). Further advancement to lower frequencies meets, perhaps, fundamental difficulties. All this necessitates further extensive theoretical and experimental studies of more or less traditional and novel semiconductor heterostructures as a basis for sources of THz radiation. This special issue includes 11 excellent original papers submitted by several research teams representing 14 institutions in Europe, America, and Asia. Several device concepts which appear to be feasible for the realization of novel THz devices are put forward and discussed in this collection of experimental and theoretical papers. The issue starts with a paper by Akis et al which deals with a theoretical study of the operation of high electron mobility transistors at THz frequencies. For this, the authors use the numerical simulations using a full-band, cellular Monte Carlo transport model coupled to a full Poisson equation solver. The next three papers by Reklaitis, Balocco et al , and Mikhailov and Zieglel are devoted to considering new ideas related to frequency multiplication which can lead to the up-conversion of ac signals to THz frequencies. For this purpose, different concepts of the devices based on nontrivial heterostructures and materials are proposed and studied. The paper by Knap et al provides an overview of the authors experimental results on the plasma effects infield effect transistors. These effects can be used for the resonant detection of THz radiation and its emission. The observed THz emission from more complex device structures, namely, dual grating gate heterostrucures, which is attributed to the self-excitation of plasma waves, is discussed by Otsuji and his co-workers. The following two papers (by Ryzhii et al and Popov et al) deal with the development of device models and using the one which could explain the results of experimental observations described in the paper by Otsuji et al . In both these papers, the mechanisms of plasma wave instability in spatially periodic heterostructures are analyzed. In the paper by Starikov and his colleagues, an idea to utilize the transit-time resonance assisted by optical phonon emissionis revived and revisited. As demonstrated, this mechanism in the electron system in nitride-made heterostructures can lead to negative dynamic conductivity in the THz range of frequencies and, hence, be used for the generation of THz radiation. In the paper by Millithaler et al, Monte Carlo simulations are used to study the voltage fluctuationsaffected by the plasma oscillations in two-terminal heterostructures with an n-type InGaAs channel.Finally, the paper by Liu {\\it et al} is devoted to the concept of quantum cascade THz lasers using resonant tunneling in quantum dot systems instead of the standard multiple quantum well heterostructures.I would like to express my deep gratitude to all of the authors for having submitted high-quality papers. I am confident that this special issue will substantially promote further progress in THz technology.

Multi-Bit Quantum Private Query

NASA Astrophysics Data System (ADS)

Shi, Wei-Xu; Liu, Xing-Tong; Wang, Jian; Tang, Chao-Jing

2015-09-01

Most of the existing Quantum Private Queries (QPQ) protocols provide only single-bit queries service, thus have to be repeated several times when more bits are retrieved. Wei et al.'s scheme for block queries requires a high-dimension quantum key distribution system to sustain, which is still restricted in the laboratory. Here, based on Markus Jakobi et al.'s single-bit QPQ protocol, we propose a multi-bit quantum private query protocol, in which the user can get access to several bits within one single query. We also extend the proposed protocol to block queries, using a binary matrix to guard database security. Analysis in this paper shows that our protocol has better communication complexity, implementability and can achieve a considerable level of security.

1.55-μm InGaAs/InGaAlAs MQW vertical-cavity surface-emitting lasers with InGaAlAs/InP distributed Bragg reflectors

NASA Astrophysics Data System (ADS)

Xia, Jinan; Hoan O, Beom; Gol Lee, Seung; Hang Lee, El

2005-03-01

High-performance InGaAs/InGaAlAs multiple-quantum-well vertical-cavity surface-emitting lasers (VCSELs) with InGaAlAs/InP distributed Bragg reflectors are proposed for operation at the wavelength of 1.55 μm. The lasers have good heat diffusion characteristic, large index contrast in DBRs, and weak temperature sensitivity. They could be fabricated either by metal-organic chemical vapor deposition (MOCVD) or by molecular beam epitaxy (MBE) growth. The laser light-current characteristics indicate that a suitable reflectivity of the DBR on the light output side in a laser makes its output power increase greatly and its lasing threshold current reduce significantly, and that a small VCSEL could output the power around its maximum for the output mirror at the reflectivity varying in a broader range than a large VCSEL does.

Quantum gate-set tomography

NASA Astrophysics Data System (ADS)

Blume-Kohout, Robin

2014-03-01

Quantum information technology is built on (1) physical qubits and (2) precise, accurate quantum logic gates that transform their states. Developing quantum logic gates requires good characterization - both in the development phase, where we need to identify a device's flaws so as to fix them, and in the production phase, where we need to make sure that the device works within specs and predict residual error rates and types. This task falls to quantum state and process tomography. But until recently, protocols for tomography relied on a pre-existing and perfectly calibrated reference frame comprising the measurements (and, for process tomography, input states) used to characterize the device. In practice, these measurements are neither independent nor perfectly known - they are usually implemented via exactly the same gates that we are trying to characterize! In the past year, several partial solutions to this self-consistency problem have been proposed. I will present a framework (gate set tomography, or GST) that addresses and resolves this problem, by self-consistently characterizing an entire set of quantum logic gates on a black-box quantum device. In particular, it contains an explicit closed-form protocol for linear-inversion gate set tomography (LGST), which is immune to both calibration error and technical pathologies like local maxima of the likelihood (which plagued earlier methods). GST also demonstrates significant (multiple orders of magnitude) improvements in efficiency over standard tomography by using data derived from long sequences of gates (much like randomized benchmarking). GST has now been applied to qubit devices in multiple technologies. I will present and discuss results of GST experiments in technologies including a single trapped-ion qubit and a silicon quantum dot qubit. Sandia National Laboratories is a multiprogram laboratory operated by Sandia Corporation, a wholly owned subsidiary of Lockheed Martin Corporation, for the U.S. Department of Energy's National Nuclear Security Administration under contract DE-AC04-94AL850.

Simultaneous dual-functioning InGaN/GaN multiple-quantum-well diode for transferrable optoelectronics

NASA Astrophysics Data System (ADS)

Shi, Zheng; Yuan, Jialei; Zhang, Shuai; Liu, Yuhuai; Wang, Yongjin

2017-10-01

We propose a wafer-level procedure for the fabrication of 1.5-mm-diameter dual functioning InGaN/GaN multiple-quantum-well (MQW) diodes on a GaN-on-silicon platform for transferrable optoelectronics. Nitride semiconductor materials are grown on (111) silicon substrates with intermediate Al-composition step-graded buffer layers, and membrane-type MQW-diode architectures are obtained by a combination of silicon removal and III-nitride film backside thinning. Suspended MQW-diodes are directly transferred from silicon to foreign substrates such as metal, glass and polyethylene terephthalate by mechanically breaking the support beams. The transferred MQW-diodes display strong electroluminescence under current injection and photodetection under light irradiation. Interestingly, they demonstrate a simultaneous light-emitting light-detecting function, endowing the 1.5-mm-diameter MQW-diode with the capability of producing transferrable optoelectronics for adjustable displays, wearable optical sensors, multifunctional energy harvesting, flexible light communication and monolithic photonic circuit.

High-temperature operation of broadband bidirectional terahertz quantum-cascade lasers.

PubMed

Khanal, Sudeep; Gao, Liang; Zhao, Le; Reno, John L; Kumar, Sushil

2016-09-12

Terahertz quantum cascade lasers (QCLs) with a broadband gain medium could play an important role for sensing and spectroscopy since then distributed-feedback schemes could be utilized to produce laser arrays on a single semiconductor chip with wide spectral coverage. QCLs can be designed to emit at two different frequencies when biased with opposing electrical polarities. Here, terahertz QCLs with bidirectional operation are developed to achieve broadband lasing from the same semiconductor chip. A three-well design scheme with shallow-well GaAs/Al0.10Ga0.90As superlattices is developed to achieve high-temperature operation for bidirectional QCLs. It is shown that shallow-well heterostructures lead to optimal quantum-transport in the superlattice for bidirectional operation compared to the prevalent GaAs/Al0.15Ga0.85As material system. Broadband lasing in the frequency range of 3.1-3.7 THz is demonstrated for one QCL design, which achieves maximum operating temperatures of 147 K and 128 K respectively in opposing polarities. Dual-color lasing with large frequency separation is demonstrated for a second QCL, that emits at ~3.7 THz and operates up to 121 K in one polarity, and at ~2.7 THz up to 105 K in the opposing polarity. These are the highest operating temperatures achieved for broadband terahertz QCLs at the respective emission frequencies, and could lead to commercial development of broadband terahertz laser arrays.

High-temperature operation of broadband bidirectional terahertz quantum-cascade lasers

DOE PAGES

Khanal, Sudeep; Gao, Liang; Zhao, Le; ...

2016-09-12

Terahertz quantum cascade lasers (QCLs) with a broadband gain medium could play an important role for sensing and spectroscopy since then distributed-feedback schemes could be utilized to produce laser arrays on a single semiconductor chip with wide spectral coverage. QCLs can be designed to emit at two different frequencies when biased with opposing electrical polarities. Here, we develop terahertz QCLs with bidirectional operation to achieve broadband lasing from the same semiconductor chip. A three-well design scheme with shallow-well GaAs/Al 0.10Ga 0.90As superlattices is developed to achieve high-temperature operation for bidirectional QCLs. It is shown that shallow-well heterostructures lead to optimalmore » quantum-transport in the superlattice for bidirectional operation compared to the prevalent GaAs/Al 0.15Ga 0.85As material system. Furthermore, broadband lasing in the frequency range of 3.1–3.7 THz is demonstrated for one QCL design, which achieves maximum operating temperatures of 147 K and 128 K respectively in opposing polarities. Dual-color lasing with large frequency separation is demonstrated for a second QCL, that emits at ~3.7 THz and operates up to 121 K in one polarity, and at ~2.7 THz up to 105 K in the opposing polarity. Finally, these are the highest operating temperatures achieved for broadband terahertz QCLs at the respective emission frequencies, and could lead to commercial development of broadband terahertz laser arrays.« less

High-temperature operation of broadband bidirectional terahertz quantum-cascade lasers

PubMed Central

Khanal, Sudeep; Gao, Liang; Zhao, Le; Reno, John L.; Kumar, Sushil

2016-01-01

Terahertz quantum cascade lasers (QCLs) with a broadband gain medium could play an important role for sensing and spectroscopy since then distributed-feedback schemes could be utilized to produce laser arrays on a single semiconductor chip with wide spectral coverage. QCLs can be designed to emit at two different frequencies when biased with opposing electrical polarities. Here, terahertz QCLs with bidirectional operation are developed to achieve broadband lasing from the same semiconductor chip. A three-well design scheme with shallow-well GaAs/Al0.10Ga0.90As superlattices is developed to achieve high-temperature operation for bidirectional QCLs. It is shown that shallow-well heterostructures lead to optimal quantum-transport in the superlattice for bidirectional operation compared to the prevalent GaAs/Al0.15Ga0.85As material system. Broadband lasing in the frequency range of 3.1–3.7 THz is demonstrated for one QCL design, which achieves maximum operating temperatures of 147 K and 128 K respectively in opposing polarities. Dual-color lasing with large frequency separation is demonstrated for a second QCL, that emits at ~3.7 THz and operates up to 121 K in one polarity, and at ~2.7 THz up to 105 K in the opposing polarity. These are the highest operating temperatures achieved for broadband terahertz QCLs at the respective emission frequencies, and could lead to commercial development of broadband terahertz laser arrays. PMID:27615416

High-temperature operation of broadband bidirectional terahertz quantum-cascade lasers

DOE Office of Scientific and Technical Information (OSTI.GOV)

Khanal, Sudeep; Gao, Liang; Zhao, Le

Terahertz quantum cascade lasers (QCLs) with a broadband gain medium could play an important role for sensing and spectroscopy since then distributed-feedback schemes could be utilized to produce laser arrays on a single semiconductor chip with wide spectral coverage. QCLs can be designed to emit at two different frequencies when biased with opposing electrical polarities. Here, we develop terahertz QCLs with bidirectional operation to achieve broadband lasing from the same semiconductor chip. A three-well design scheme with shallow-well GaAs/Al 0.10Ga 0.90As superlattices is developed to achieve high-temperature operation for bidirectional QCLs. It is shown that shallow-well heterostructures lead to optimalmore » quantum-transport in the superlattice for bidirectional operation compared to the prevalent GaAs/Al 0.15Ga 0.85As material system. Furthermore, broadband lasing in the frequency range of 3.1–3.7 THz is demonstrated for one QCL design, which achieves maximum operating temperatures of 147 K and 128 K respectively in opposing polarities. Dual-color lasing with large frequency separation is demonstrated for a second QCL, that emits at ~3.7 THz and operates up to 121 K in one polarity, and at ~2.7 THz up to 105 K in the opposing polarity. Finally, these are the highest operating temperatures achieved for broadband terahertz QCLs at the respective emission frequencies, and could lead to commercial development of broadband terahertz laser arrays.« less

Interface and photoluminescence characteristics of graphene-(GaN/InGaN){sub n} multiple quantum wells hybrid structure

DOE Office of Scientific and Technical Information (OSTI.GOV)

Wang, Liancheng, E-mail: wanglc@semi.ac.cn, E-mail: lzq@semi.ac.cn, E-mail: zh.zhang@hebut.edu.cn; Semiconductor Lighting Technology Research and Development Center, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083; Mind Star

The effects of graphene on the optical properties of active system, e.g., the InGaN/GaN multiple quantum wells, are thoroughly investigated and clarified. Here, we have investigated the mechanisms accounting for the photoluminescence reduction for the graphene covered GaN/InGaN multiple quantum wells hybrid structure. Compared to the bare multiple quantum wells, the photoluminescence intensity of graphene covered multiple quantum wells showed a 39% decrease after excluding the graphene absorption losses. The responsible mechanisms have been identified with the following factors: (1) the graphene two dimensional hole gas intensifies the polarization field in multiple quantum wells, thus steepening the quantum well bandmore » profile and causing hole-electron pairs to further separate; (2) a lower affinity of graphene compared to air leading to a weaker capability to confine the excited hot electrons in multiple quantum wells; and (3) exciton transfer through non-radiative energy transfer process. These factors are theoretically analysed based on advanced physical models of semiconductor devices calculations and experimentally verified by varying structural parameters, such as the indium fraction in multiple quantum wells and the thickness of the last GaN quantum barrier spacer layer.« less

Long lifetimes of ultrahot particles in interacting Fermi systems

NASA Astrophysics Data System (ADS)

Bard, M.; Protopopov, I. V.; Mirlin, A. D.

2018-05-01

The energy dependence of the relaxation rate of hot electrons due to interaction with the Fermi sea is studied. We consider 2D and 3D systems, quasi-1D quantum wires with multiple transverse bands, as well as single-channel 1D wires. Our analysis includes both spinful and spin-polarized setups, with short-range and Coulomb interactions. We show that, quite generally, the relaxation rate is a nonmonotonic function of the electron energy and decays as a power law at high energies. In other words, ultrahot electrons regain their coherence with increasing energy. Such a behavior was observed in a recent experiment on multiband quantum wires, J. Reiner et al., Phys. Rev. X 7, 021016 (2017)., 10.1103/PhysRevX.7.021016

Short wavelength (visible) GaAs quantum well lasers grown by molecular beam epitaxy

DOE Office of Scientific and Technical Information (OSTI.GOV)

Woodbridge, K.; Blood, P.; Fletcher, E.D.

1984-07-01

GaAs-AlGaAs multiple quantum well (MQW) injection lasers with well widths from 55 to 13 A have been grown by molecular beam epitaxy and operated at room temperature, showing emission at wavelengths down to 704 nm, the shortest reported for a MQW injection laser with GaAs wells. In a device with 25-A wells some evidence of coupling was apparent when barrier widths were reduced to 40 A. For devices with 80-A barriers there is a difference of about 20 nm between the calculated n = 1 (e--hh) transition wavelength and the lasing wavelength, whereas the calculation agrees with photovoltage absorption measurementsmore » on the same structures.« less

Optical Properties of Gallium Arsenide and Indium Gallium Arsenide Quantum Wells and Their Applications to Opto-Electronic Devices.

NASA Astrophysics Data System (ADS)

Huang, Daming

1990-01-01

In this thesis we investigate the optical properties of modulation doped GaAs/AlGaAs and strained-layer undoped InGaAs/GaAs multiple quantum well structures (MQWS). The phenomena studied are the effects of carrier, strain, and the electric field on the absorption of excitons. For GaAs/AlGaAs modulation doped MQWS, the quenching of excitons by free carriers has been demonstrated. The comparison of the experimental results with calculations which consider phase space filling, screening, and exchange interaction showed the phase space filling to be the dominant mechanism responsible for the change of oscillator strength and binding energy of excitons associated with partially filled subband. On the other hand, the screening and exchange interaction are equally important to excitons associated with empty subbands. For InGaAs/GaAs strained-layer MQWS, we have demonstrated that the band edges are dramatically modified by strain. We determined the band discontinuities at InGaAs/GaAs interfaces using optical absorption, and showed that in this structure the heavy holes are confined in InGaAs layers while the light holes are in GaAs layers, in contrast to GaAs/AlGaAs MQWS. We also explore applications of GaAs/AlGaAs and InGaAs/GaAs MQWS to opto-electronic devices. The principle of devices investigated is mainly based on the electric field effect on the excitonic absorption in MQWS (the quantum confined Stark effect). Two examples presented in this thesis are the strained-layer InGaAs/GaAs MQWS electroabsorption modulators grown on GaAs substrates and the GaAs/AlGaAs MQWS reflection modulators grown on Si substrates. The large modulation observed in the absorption coefficient by an electric field is expected to facilitate opto-electronic integration.

Direct evidence of single quantum dot emission from GaN islands formed at threading dislocations using nanoscale cathodoluminescence: A source of single photons in the ultraviolet

DOE Office of Scientific and Technical Information (OSTI.GOV)

Schmidt, Gordon, E-mail: Gordon.Schmidt@ovgu.de; Berger, Christoph; Veit, Peter

2015-06-22

Intense emission from GaN islands embedded in AlN resulting from GaN/AlN quantum well growth is directly resolved by performing cathodoluminescence spectroscopy in a scanning transmission electron microscope. Line widths down to 440 μeV are measured in a wavelength region between 220 and 310 nm confirming quantum dot like electronic properties in the islands. These quantum dot states can be structurally correlated to islands of slightly enlarged thicknesses of the GaN/AlN quantum well layer preferentially formed in vicinity to dislocations. The quantum dot states exhibit single photon emission in Hanbury Brown-Twiss experiments with a clear antibunching in the second order correlation function atmore » zero time delay.« less

Quantum Mechanics in Insulators

DOE Office of Scientific and Technical Information (OSTI.GOV)

Aeppli, G.; Department of Physics and Astronomy, University College of London, London

Atomic physics is undergoing a large revival because of the possibility of trapping and cooling ions and atoms both for individual quantum control as well as collective quantum states, such as Bose-Einstein condensates. The present lectures start from the 'atomic' physics of isolated atoms in semiconductors and insulators and proceed to coupling them together to yield magnets undergoing quantum phase transitions as well as displaying novel quantum states with no classical analogs. The lectures are based on: G.-Y. Xu et al., Science 317, 1049-1052 (2007); G. Aeppli, P. Warburton, C. Renner, BT Technology Journal, 24, 163-169 (2006); H. M. Ronnowmore » et al., Science 308, 392-395 (2005) and N. Q. Vinh et al., PNAS 105, 10649-10653 (2008).« less

182Hf-182W age dating of a 26Al-poor inclusion and implications for the origin of short-lived radioisotopes in the early Solar System.

PubMed

Holst, Jesper C; Olsen, Mia B; Paton, Chad; Nagashima, Kazuhide; Schiller, Martin; Wielandt, Daniel; Larsen, Kirsten K; Connelly, James N; Jørgensen, Jes K; Krot, Alexander N; Nordlund, Ake; Bizzarro, Martin

2013-05-28

Refractory inclusions [calcium-aluminum-rich inclusions, (CAIs)] represent the oldest Solar System solids and provide information regarding the formation of the Sun and its protoplanetary disk. CAIs contain evidence of now extinct short-lived radioisotopes (e.g., (26)Al, (41)Ca, and (182)Hf) synthesized in one or multiple stars and added to the protosolar molecular cloud before or during its collapse. Understanding how and when short-lived radioisotopes were added to the Solar System is necessary to assess their validity as chronometers and constrain the birthplace of the Sun. Whereas most CAIs formed with the canonical abundance of (26)Al corresponding to (26)Al/(27)Al of ∼5 × 10(-5), rare CAIs with fractionation and unidentified nuclear isotope effects (FUN CAIs) record nucleosynthetic isotopic heterogeneity and (26)Al/(27)Al of <5 × 10(-6), possibly reflecting their formation before canonical CAIs. Thus, FUN CAIs may provide a unique window into the earliest Solar System, including the origin of short-lived radioisotopes. However, their chronology is unknown. Using the (182)Hf-(182)W chronometer, we show that a FUN CAI recording a condensation origin from a solar gas formed coevally with canonical CAIs, but with (26)Al/(27)Al of ∼3 × 10(-6). The decoupling between (182)Hf and (26)Al requires distinct stellar origins: steady-state galactic stellar nucleosynthesis for (182)Hf and late-stage contamination of the protosolar molecular cloud by a massive star(s) for (26)Al. Admixing of stellar-derived (26)Al to the protoplanetary disk occurred during the epoch of CAI formation and, therefore, the (26)Al-(26)Mg systematics of CAIs cannot be used to define their formation interval. In contrast, our results support (182)Hf homogeneity and chronological significance of the (182)Hf-(182)W clock.

Perfect quantum multiple-unicast network coding protocol

NASA Astrophysics Data System (ADS)

Li, Dan-Dan; Gao, Fei; Qin, Su-Juan; Wen, Qiao-Yan

2018-01-01

In order to realize long-distance and large-scale quantum communication, it is natural to utilize quantum repeater. For a general quantum multiple-unicast network, it is still puzzling how to complete communication tasks perfectly with less resources such as registers. In this paper, we solve this problem. By applying quantum repeaters to multiple-unicast communication problem, we give encoding-decoding schemes for source nodes, internal ones and target ones, respectively. Source-target nodes share EPR pairs by using our encoding-decoding schemes over quantum multiple-unicast network. Furthermore, quantum communication can be accomplished perfectly via teleportation. Compared with existed schemes, our schemes can reduce resource consumption and realize long-distance transmission of quantum information.

An elegant route to overcome fundamentally-limited light extraction in AlGaN deep-ultraviolet light-emitting diodes: Preferential outcoupling of strong in-plane emission

PubMed Central

Lee, Jong Won; Kim, Dong Yeong; Park, Jun Hyuk; Schubert, E. Fred; Kim, Jungsub; Lee, Jinsub; Kim, Yong-Il; Park, Youngsoo; Kim, Jong Kyu

2016-01-01

While there is an urgent need for semiconductor-based efficient deep ultraviolet (DUV) sources, the efficiency of AlGaN DUV light-emitting diodes (LEDs) remains very low because the extraction of DUV photons is significantly limited by intrinsic material properties of AlGaN. Here, we present an elegant approach based on a DUV LED having multiple mesa stripes whose inclined sidewalls are covered by a MgF2/Al omni-directional mirror to take advantage of the strongly anisotropic transverse-magnetic polarized emission pattern of AlGaN quantum wells. The sidewall-emission-enhanced DUV LED breaks through the fundamental limitations caused by the intrinsic properties of AlGaN, thus shows a remarkable improvement in light extraction as well as operating voltage. Furthermore, an analytic model is developed to understand and precisely estimate the extraction of DUV photons from AlGaN DUV LEDs, and hence to provide promising routes for maximizing the power conversion efficiency. PMID:26935402

An elegant route to overcome fundamentally-limited light extraction in AlGaN deep-ultraviolet light-emitting diodes: Preferential outcoupling of strong in-plane emission

NASA Astrophysics Data System (ADS)

Lee, Jong Won; Kim, Dong Yeong; Park, Jun Hyuk; Schubert, E. Fred; Kim, Jungsub; Lee, Jinsub; Kim, Yong-Il; Park, Youngsoo; Kim, Jong Kyu

2016-03-01

While there is an urgent need for semiconductor-based efficient deep ultraviolet (DUV) sources, the efficiency of AlGaN DUV light-emitting diodes (LEDs) remains very low because the extraction of DUV photons is significantly limited by intrinsic material properties of AlGaN. Here, we present an elegant approach based on a DUV LED having multiple mesa stripes whose inclined sidewalls are covered by a MgF2/Al omni-directional mirror to take advantage of the strongly anisotropic transverse-magnetic polarized emission pattern of AlGaN quantum wells. The sidewall-emission-enhanced DUV LED breaks through the fundamental limitations caused by the intrinsic properties of AlGaN, thus shows a remarkable improvement in light extraction as well as operating voltage. Furthermore, an analytic model is developed to understand and precisely estimate the extraction of DUV photons from AlGaN DUV LEDs, and hence to provide promising routes for maximizing the power conversion efficiency.

Experimental realization of nondestructive discrimination of Bell states using a five-qubit quantum computer

NASA Astrophysics Data System (ADS)

Sisodia, Mitali; Shukla, Abhishek; Pathak, Anirban

2017-12-01

A scheme for distributed quantum measurement that allows nondestructive or indirect Bell measurement was proposed by Gupta et al [1]. In the present work, Gupta et al.'s scheme is experimentally realized using the five-qubit super-conductivity-based quantum computer, which has been recently placed in cloud by IBM Corporation. The experiment confirmed that the Bell state can be constructed and measured in a nondestructive manner with a reasonably high fidelity. A comparison of the outcomes of this study and the results obtained earlier in an NMR-based experiment (Samal et al. (2010) [10]) has also been performed. The study indicates that to make a scalable SQUID-based quantum computer, errors introduced by the gates (in the present technology) have to be reduced considerably.

Type-I interband cascade lasers near 3.2 μm

DOE Office of Scientific and Technical Information (OSTI.GOV)

Jiang, Yuchao; Li, Lu; Yang, Rui Q., E-mail: Rui.Q.Yang@ou.edu

2015-01-26

Interband cascade (IC) lasers have been demonstrated based on type-I InGaAsSb/AlAsSb quantum well (QW) active regions. These type-I IC lasers are composed of 6-cascade stages and InAs/AlSb superlattice cladding layers. In contrast to the use of quinary AlGaInAsSb barriers for active region in previous type-I QW lasers, the type-I QW active region in each stage is sandwiched by digitally graded multiple InAs/AlSb QW electron injector and GaSb/AlSb QW hole injector. The fabricated type-I IC lasers were able to operate in continuous wave and pulsed modes at temperatures up to 306 and 365 K, respectively. The threshold current densities of broad-area lasersmore » were around 300 A/cm{sup 2} at 300 K with a lasing wavelength near 3.2 μm. The implications and prospects of these initial results are discussed.« less

Tightening the entropic uncertainty bound in the presence of quantum memory

NASA Astrophysics Data System (ADS)

Adabi, F.; Salimi, S.; Haseli, S.

2016-06-01

The uncertainty principle is a fundamental principle in quantum physics. It implies that the measurement outcomes of two incompatible observables cannot be predicted simultaneously. In quantum information theory, this principle can be expressed in terms of entropic measures. M. Berta et al. [Nat. Phys. 6, 659 (2010), 10.1038/nphys1734] have indicated that uncertainty bound can be altered by considering a particle as a quantum memory correlating with the primary particle. In this article, we obtain a lower bound for entropic uncertainty in the presence of a quantum memory by adding an additional term depending on the Holevo quantity and mutual information. We conclude that our lower bound will be tightened with respect to that of Berta et al. when the accessible information about measurements outcomes is less than the mutual information about the joint state. Some examples have been investigated for which our lower bound is tighter than Berta et al.'s lower bound. Using our lower bound, a lower bound for the entanglement of formation of bipartite quantum states has been obtained, as well as an upper bound for the regularized distillable common randomness.

On the origin of the electron blocking effect by an n-type AlGaN electron blocking layer

DOE Office of Scientific and Technical Information (OSTI.GOV)

Zhang, Zi-Hui; Ji, Yun; Liu, Wei

2014-02-17

In this work, the origin of electron blocking effect of n-type Al{sub 0.25}Ga{sub 0.75}N electron blocking layer (EBL) for c+ InGaN/GaN light-emitting diodes has been investigated through dual-wavelength emission method. It is found that the strong polarization induced electric field within the n-EBL reduces the thermal velocity and correspondingly the mean free path of the hot electrons. As a result, the electron capture efficiency of the multiple quantum wells is enhanced, which significantly reduces the electron overflow from the active region and increases the radiative recombination rate with holes.

Practical quantum private query of blocks based on unbalanced-state Bennett-Brassard-1984 quantum-key-distribution protocol

NASA Astrophysics Data System (ADS)

Wei, Chun-Yan; Gao, Fei; Wen, Qiao-Yan; Wang, Tian-Yin

2014-12-01

Until now, the only kind of practical quantum private query (QPQ), quantum-key-distribution (QKD)-based QPQ, focuses on the retrieval of a single bit. In fact, meaningful message is generally composed of multiple adjacent bits (i.e., a multi-bit block). To obtain a message from database, the user Alice has to query l times to get each ai. In this condition, the server Bob could gain Alice's privacy once he obtains the address she queried in any of the l queries, since each ai contributes to the message Alice retrieves. Apparently, the longer the retrieved message is, the worse the user privacy becomes. To solve this problem, via an unbalanced-state technique and based on a variant of multi-level BB84 protocol, we present a protocol for QPQ of blocks, which allows the user to retrieve a multi-bit block from database in one query. Our protocol is somewhat like the high-dimension version of the first QKD-based QPQ protocol proposed by Jacobi et al., but some nontrivial modifications are necessary.

Terahertz response in the quantum-Hall-effect regime of a quantum-well-based charge-sensitive infrared phototransistor

NASA Astrophysics Data System (ADS)

Nakagawa, Daisuke; Takizawa, Kazuhiro; Ikushima, Kenji; Kim, Sunmi; Patrashin, Mikhail; Hosako, Iwao; Komiyama, Susumu

2018-04-01

The characteristics of a charge-sensitive infrared phototransistor (CSIP) based on a GaAs/AlGaAs multiple quantum-well (QW) structure are studied under a magnetic field. In the CSIP, the upper QWs serve as a floating gate that is charged by photoexcitation. The photoinduced charges are detected using the resistance of the lowest QW conducting channel. The conducting channel exhibits the integer quantum Hall effect (QHE) in a perpendicular high magnetic field, yielding the magnetic field dependence of the terahertz (THz) response ΔR. We found two different features of ΔR. One is that ΔR switches sign across the QHE plateau, which is explained simply by an increased electron density in the conducting channel. The other feature is observed as an enhanced positive ΔR when a potential barrier is formed in the conducting channel. The latter mechanism can be interpreted as the promotion of edge/bulk scattering due to photoinduced charges. These findings suggest ways to enhance the THz response by using magnetic fields and potential barriers.

Practical quantum private query of blocks based on unbalanced-state Bennett-Brassard-1984 quantum-key-distribution protocol

PubMed Central

Wei, Chun-Yan; Gao, Fei; Wen, Qiao-Yan; Wang, Tian-Yin

2014-01-01

Until now, the only kind of practical quantum private query (QPQ), quantum-key-distribution (QKD)-based QPQ, focuses on the retrieval of a single bit. In fact, meaningful message is generally composed of multiple adjacent bits (i.e., a multi-bit block). To obtain a message from database, the user Alice has to query l times to get each ai. In this condition, the server Bob could gain Alice's privacy once he obtains the address she queried in any of the l queries, since each ai contributes to the message Alice retrieves. Apparently, the longer the retrieved message is, the worse the user privacy becomes. To solve this problem, via an unbalanced-state technique and based on a variant of multi-level BB84 protocol, we present a protocol for QPQ of blocks, which allows the user to retrieve a multi-bit block from database in one query. Our protocol is somewhat like the high-dimension version of the first QKD-based QPQ protocol proposed by Jacobi et al., but some nontrivial modifications are necessary. PMID:25518810

Quantum Weak Values and Logic: An Uneasy Couple

NASA Astrophysics Data System (ADS)

Svensson, Bengt E. Y.

2017-03-01

Quantum mechanical weak values of projection operators have been used to answer which-way questions, e. g. to trace which arms in a multiple Mach-Zehnder setup a particle may have traversed from a given initial to a prescribed final state. I show that this procedure might lead to logical inconsistencies in the sense that different methods used to answer composite questions, like "Has the particle traversed the way X or the way Y?", may result in different answers depending on which methods are used to find the answer. I illustrate the problem by considering some examples: the "quantum pigeonhole" framework of Aharonov et al., the three-box problem, and Hardy's paradox. To prepare the ground for my main conclusion on the incompatibility in certain cases of weak values and logic, I study the corresponding situation for strong/projective measurements. In this case, no logical inconsistencies occur provided one is always careful in specifying exactly to which ensemble or sample space one refers. My results cast doubts on the utility of quantum weak values in treating cases like the examples mentioned.

182Hf–182W age dating of a 26Al-poor inclusion and implications for the origin of short-lived radioisotopes in the early Solar System

PubMed Central

Holst, Jesper C.; Olsen, Mia B.; Paton, Chad; Nagashima, Kazuhide; Schiller, Martin; Wielandt, Daniel; Larsen, Kirsten K.; Connelly, James N.; Jørgensen, Jes K.; Krot, Alexander N.; Nordlund, Åke; Bizzarro, Martin

2013-01-01

Refractory inclusions [calcium–aluminum-rich inclusions, (CAIs)] represent the oldest Solar System solids and provide information regarding the formation of the Sun and its protoplanetary disk. CAIs contain evidence of now extinct short-lived radioisotopes (e.g., 26Al, 41Ca, and 182Hf) synthesized in one or multiple stars and added to the protosolar molecular cloud before or during its collapse. Understanding how and when short-lived radioisotopes were added to the Solar System is necessary to assess their validity as chronometers and constrain the birthplace of the Sun. Whereas most CAIs formed with the canonical abundance of 26Al corresponding to 26Al/27Al of ∼5 × 10−5, rare CAIs with fractionation and unidentified nuclear isotope effects (FUN CAIs) record nucleosynthetic isotopic heterogeneity and 26Al/27Al of <5 × 10−6, possibly reflecting their formation before canonical CAIs. Thus, FUN CAIs may provide a unique window into the earliest Solar System, including the origin of short-lived radioisotopes. However, their chronology is unknown. Using the 182Hf–182W chronometer, we show that a FUN CAI recording a condensation origin from a solar gas formed coevally with canonical CAIs, but with 26Al/27Al of ∼3 × 10−6. The decoupling between 182Hf and 26Al requires distinct stellar origins: steady-state galactic stellar nucleosynthesis for 182Hf and late-stage contamination of the protosolar molecular cloud by a massive star(s) for 26Al. Admixing of stellar-derived 26Al to the protoplanetary disk occurred during the epoch of CAI formation and, therefore, the 26Al–26Mg systematics of CAIs cannot be used to define their formation interval. In contrast, our results support 182Hf homogeneity and chronological significance of the 182Hf–182W clock. PMID:23671077

Quantum Hall Ferroelectrics and Nematics in Multivalley Systems

NASA Astrophysics Data System (ADS)

Sodemann, Inti; Zhu, Zheng; Fu, Liang

2017-10-01

We study broken symmetry states at integer Landau-level fillings in multivalley quantum Hall systems whose low-energy dispersions are anisotropic. When the Fermi surface of individual pockets lacks twofold rotational symmetry, like in bismuth (111) [Feldman et al. , Observation of a Nematic Quantum Hall Liquid on the Surface of Bismuth, Science 354, 316 (2016), 10.1126/science.aag1715] and in Sn1 -xPbxSe (001) [Dziawa et al., Topological Crystalline Insulator States in Pb1 -xSnxSe , Nat. Mater. 11, 1023 (2012), 10.1038/nmat3449] surfaces, interactions tend to drive the formation of quantum Hall ferroelectric states. We demonstrate that the dipole moment in these states has an intimate relation to the Fermi surface geometry of the parent metal. In quantum Hall nematic states, like those arising in AlAs quantum wells, we demonstrate the existence of unusually robust Skyrmion quasiparticles.

Screw dislocation-induced growth spirals as emissive exciton localization centers in Al-rich AlGaN/AlN quantum wells

DOE Office of Scientific and Technical Information (OSTI.GOV)

Funato, Mitsuru, E-mail: funato@kuee.kyoto-u.ac.jp; Banal, Ryan G.; Kawakami, Yoichi

2015-11-15

Screw dislocations in Al-rich AlGaN/AlN quantum wells cause growth spirals with an enhanced Ga incorporation, which create potential minima. Although screw dislocations and their surrounding potential minima suggest non-radiative recombination processes within growth spirals, in reality, screw dislocations are not major non-radiative sinks for carriers. Consequently, carriers localized within growth spirals recombine radiatively without being captured by non-radiative recombination centers, resulting in intense emissions from growth spirals.

Effect of growth interruption in 1.55 μm InAs/InAlGaAs quantum dots on InP grown by molecular beam epitaxy

NASA Astrophysics Data System (ADS)

Jung, Daehwan; Ironside, Daniel J.; Bank, Seth R.; Gossard, Arthur C.; Bowers, John E.

2018-05-01

We report the effect of growth interruptions on the structural and optical properties of InAs/InAlGaAs/InP quantum dots using molecular beam epitaxy. We find that the surface quantum dots experience an unintended ripening process during the sample cooling stage, which reshapes the uncapped InAs nanostructures. To prevent this, we performed a partial capping experiment to effectively inhibit structural reconfiguration of surface InAs nanostructures during the cooling stage, revealing that InAs nanostructures first form quantum dashes and then transform into quantum dots via a ripening process. Our result suggests that the appearance of buried InAs/InAlGaAs nanostructures can be easily misunderstood by surface analysis.

Investigation of efficiency enhancement in InGaN MQW LED with compositionally step graded GaN/InAlN/GaN multi-layer barrier

NASA Astrophysics Data System (ADS)

Prajoon, P.; Anuja Menokey, M.; Charles Pravin, J.; Ajayan, J.; Rajesh, S.; Nirmal, D.

2018-04-01

The advantage of InGaN multiple Quantum well (MQW) Light emitting diode (LED) on a SiC substrate with compositionally step graded GaN/InAlN/GaN multi-layer barrier (MLB) is studied. The Internal quantum efficiency, Optical power, current-voltage characteristics, spontaneous emission rate and carrier distribution profile in the active region are investigated using Sentaurus TCAD simulation. An analytical model is also developed to describe the QW carrier injection efficiency, by including carrier leakage mechanisms like carrier overflow, thermionic emission and tunnelling. The enhanced electron confinement, reduced carrier asymmetry, and suppressed carrier overflow in the active region of the MLB MQW LED leads to render a superior performance than the conventional GaN barrier MQW LED. The simulation result also elucidates the efficiency droop behaviour in the MLB MQW LED, it suggests that the efficiency droop effect is remarkably improved when the GaN barrier is replaced with GaN/InAlN/GaN MLB barrier. The analysis shows a dominating behaviour of carrier escape mechanism due to tunnelling. Moreover, the lower lattice mismatching of SiC substrate with GaN epitaxial layer is attributed with good crystal quality and reduced polarization effect, ultimately enhances the optical performance of the LEDs.

Influence of InGaN sub-quantum-well on performance of InAlN/GaN/InAlN resonant tunneling diodes

DOE Office of Scientific and Technical Information (OSTI.GOV)

Chen, Haoran; Yang, Lin'an, E-mail: layang@xidian.edu.cn; Hao, Yue

The resonant tunneling mechanism of the GaN based resonant tunneling diode (RTD) with an InGaN sub-quantum-well has been investigated by means of numerical simulation. At resonant-state, Electrons in the InGaN/InAlN/GaN/InAlN RTD tunnel from the emitter region through the aligned discrete energy levels in the InGaN sub-quantum-well and GaN main-quantum-well into the collector region. The implantation of the InGaN sub-quantum-well alters the dominant transport mechanism, increase the transmission coefficient and give rise to the peak current and peak-to-valley current ratio. We also demonstrate that the most pronounced negative-differential-resistance characteristic can be achieved by choosing appropriately the In composition of In{sub x}Ga{submore » 1−x}N at around x = 0.06.« less

Growth condition dependence of photoluminescence polarization in (100) GaAs/AlGaAs quantum wells at room temperature

DOE Office of Scientific and Technical Information (OSTI.GOV)

Iba, Satoshi; Saito, Hidekazu; Yuasa, Shinji

2015-08-28

We conducted systematic measurements on the carrier lifetime (τ{sub c}), spin relaxation time (τ{sub s}), and circular polarization of photoluminescence (P{sub circ}) in (100) GaAs/AlGaAs multiple quantum wells grown by molecular beam epitaxy (MBE). The τ{sub c} values are strongly affected by MBE growth conditions (0.4–9 ns), whereas the τ{sub s} are almost constant at about 0.13 ns. The result suggests that spin detection efficiency [τ{sub s}/(τ{sub c} + τ{sub s})], which is expected to be proportional to a steady-state P{sub circ}, is largely dependent on growth condition. We confirmed that the P{sub circ} has similar dependence on growth condition to those of τ{submore » s}/(τ{sub c} + τ{sub s}) values. The study thus indicates that choosing the appropriate growth condition of the QW is indispensable for obtaining a high P{sub circ} from a spin-polarized light-emitting diode (spin-LED)« less

Some Phthalocyanine and Naphthalocyanine Derivatives as Corrosion Inhibitors for Aluminium in Acidic Medium: Experimental, Quantum Chemical Calculations, QSAR Studies and Synergistic Effect of Iodide Ions.

PubMed

Dibetsoe, Masego; Olasunkanmi, Lukman O; Fayemi, Omolola E; Yesudass, Sasikumar; Ramaganthan, Baskar; Bahadur, Indra; Adekunle, Abolanle S; Kabanda, Mwadham M; Ebenso, Eno E

2015-08-28

The effects of seven macrocyclic compounds comprising four phthalocyanines (Pcs) namely 1,4,8,11,15,18,22,25-octabutoxy-29H,31H-phthalocyanine (Pc1), 2,3,9,10,16,17,23,24-octakis(octyloxy)-29H,31H-phthalocyanine (Pc2), 2,9,16,23-tetra-tert-butyl-29H,31H-phthalocyanine (Pc3) and 29H,31H-phthalocyanine (Pc4), and three naphthalocyanines namely 5,9,14,18,23,27,32,36-octabutoxy-2,3-naphthalocyanine (nPc1), 2,11,20,29-tetra-tert-butyl-2,3-naphthalocyanine (nPc2) and 2,3-naphthalocyanine (nP3) were investigated on the corrosion of aluminium (Al) in 1 M HCl using a gravimetric method, potentiodynamic polarization technique, quantum chemical calculations and quantitative structure activity relationship (QSAR). Synergistic effects of KI on the corrosion inhibition properties of the compounds were also investigated. All the studied compounds showed appreciable inhibition efficiencies, which decrease with increasing temperature from 30 °C to 70 °C. At each concentration of the inhibitor, addition of 0.1% KI increased the inhibition efficiency compared to the absence of KI indicating the occurrence of synergistic interactions between the studied molecules and I(-) ions. From the potentiodynamic polarization studies, the studied Pcs and nPcs are mixed type corrosion inhibitors both without and with addition of KI. The adsorption of the studied molecules on Al surface obeys the Langmuir adsorption isotherm, while the thermodynamic and kinetic parameters revealed that the adsorption of the studied compounds on Al surface is spontaneous and involves competitive physisorption and chemisorption mechanisms. The experimental results revealed the aggregated interactions between the inhibitor molecules and the results further indicated that the peripheral groups on the compounds affect these interactions. The calculated quantum chemical parameters and the QSAR results revealed the possibility of strong interactions between the studied inhibitors and metal surface. QSAR analysis on the quantum chemical parameters obtained with B3LYP/6-31G (d,p) method show that a combination of two quantum chemical parameters to form a composite index provides the best correlation with the experimental data.

Motion and Structure Estimation of Manoeuvring Objects in Multiple- Camera Image Sequences

DTIC Science & Technology

1992-11-01

and Speckert [23], Gennery [24], Hallman [25], Legters and Young [26], Stuller and Krishnamurthy [27], Wu et al. [381, Matthies, Kanade, and Szeliski...26] G.R. Legters , T.Y. Young, "A mathematical model for computer image track- ing," IEEE Transactions on Pattern Analysis and Machine Intelligence

Light charged particle multiplicities in fusion and quasifission reactions

NASA Astrophysics Data System (ADS)

Kalandarov, Sh. A.; Adamian, G. G.; Antonenko, N. V.; Lacroix, D.; Wieleczko, J. P.

2018-01-01

The light charged particle evaporation from the compound nucleus and from the complex fragments in the reactions 32S+100Mo, 121Sb+27Al, 40Ar+164Dy, and 40Ar+ nat Ag is studied within the dinuclear system model. The possibility to distinguish the reaction products from different reaction mechanisms is discussed.

AlGaAs-GaAs quantum-well lasers for direct solar photopumping

NASA Technical Reports Server (NTRS)

Unnikrishnan, Sreenath; Anderson, Neal G.

1991-01-01

The paper theoretically examines the solar power requirements for low-threshold AlGaAs-GaAs quantum-well lasers directly photopumped by focused sunlight. A model of separate-confinement quantum-well-heterostructure (SCQWH) lasers was developed, which explicitly treats absorption and transport phenomena relevant to solar pumping. The model was used to identify separate-confinement single-quantum-well laser structures which should operate at photoexcitation intensities of less than 10,000 suns.

Quantum-Critical Dynamics of the Skyrmion Lattice.

NASA Astrophysics Data System (ADS)

Green, Andrew G.

2002-03-01

Slightly away from exact filling of the lowest Landau level, the quantum Hall ferromagnet contains a finite density of magnetic vortices or Skyrmions[1,2]. These Skyrmions are expected to form a square lattice[3], the low energy excitations of which (translation/phonon modes and rotation/breathing modes) lead to dramatically enhanced nuclear relaxation[4,5]. Upon changing the filling fraction, the rotational modes undergo a quantum phase transition where zero-point fluctuations destroy the orientational order of the Skyrmions[4,6]. I will discuss the effect of this quantum critical point upon nuclear spin relaxation[7]. [1]S. L. Sondhi et al., Phys. Rev. B47, 16419 (1993). [2]S. E. Barrett et al., Phys. Rev. Lett. 74, 5112 (1995), A. Schmeller et al., Phys. Rev. Lett. 75, 4290 (1995). [3]L. Brey et al, Phys. Rev. Lett. 75, 2562 (1995). [4]R. Côté et al., Phys. Rev. Lett. 78, 4825 (1997). [5]R. Tycko et al., Science 268, 1460 (1995). [6]Yu V. Nazarov and A. V. Khaetskii, Phys. Rev. Lett. 80, 576 (1998). [7]A. G. Green, Phys. Rev. B61, R16 299 (2000).

Quantum cluster algebras and quantum nilpotent algebras.

PubMed

Goodearl, Kenneth R; Yakimov, Milen T

2014-07-08

A major direction in the theory of cluster algebras is to construct (quantum) cluster algebra structures on the (quantized) coordinate rings of various families of varieties arising in Lie theory. We prove that all algebras in a very large axiomatically defined class of noncommutative algebras possess canonical quantum cluster algebra structures. Furthermore, they coincide with the corresponding upper quantum cluster algebras. We also establish analogs of these results for a large class of Poisson nilpotent algebras. Many important families of coordinate rings are subsumed in the class we are covering, which leads to a broad range of applications of the general results to the above-mentioned types of problems. As a consequence, we prove the Berenstein-Zelevinsky conjecture [Berenstein A, Zelevinsky A (2005) Adv Math 195:405-455] for the quantized coordinate rings of double Bruhat cells and construct quantum cluster algebra structures on all quantum unipotent groups, extending the theorem of Geiß et al. [Geiß C, et al. (2013) Selecta Math 19:337-397] for the case of symmetric Kac-Moody groups. Moreover, we prove that the upper cluster algebras of Berenstein et al. [Berenstein A, et al. (2005) Duke Math J 126:1-52] associated with double Bruhat cells coincide with the corresponding cluster algebras.

Quantum cluster algebras and quantum nilpotent algebras

PubMed Central

Goodearl, Kenneth R.; Yakimov, Milen T.

2014-01-01

A major direction in the theory of cluster algebras is to construct (quantum) cluster algebra structures on the (quantized) coordinate rings of various families of varieties arising in Lie theory. We prove that all algebras in a very large axiomatically defined class of noncommutative algebras possess canonical quantum cluster algebra structures. Furthermore, they coincide with the corresponding upper quantum cluster algebras. We also establish analogs of these results for a large class of Poisson nilpotent algebras. Many important families of coordinate rings are subsumed in the class we are covering, which leads to a broad range of applications of the general results to the above-mentioned types of problems. As a consequence, we prove the Berenstein–Zelevinsky conjecture [Berenstein A, Zelevinsky A (2005) Adv Math 195:405–455] for the quantized coordinate rings of double Bruhat cells and construct quantum cluster algebra structures on all quantum unipotent groups, extending the theorem of Geiß et al. [Geiß C, et al. (2013) Selecta Math 19:337–397] for the case of symmetric Kac–Moody groups. Moreover, we prove that the upper cluster algebras of Berenstein et al. [Berenstein A, et al. (2005) Duke Math J 126:1–52] associated with double Bruhat cells coincide with the corresponding cluster algebras. PMID:24982197

Sb surfactant mediated growth of InAs/AlAs{sub 0.56}Sb{sub 0.44} strained quantum well for intersubband absorption at 1.55 μm

DOE Office of Scientific and Technical Information (OSTI.GOV)

Zhao, Yu; Bertru, Nicolas; Folliot, Hervé

Surfactant mediated growth of strained InAs/AlAs{sub 0.56}Sb{sub 0.44} quantum wells on InP (001) substrate is investigated. X ray diffraction and transmission electron microscopy analysis reveal that the supply of antimony on InAs surface delays the 2D to 3D growth transition and allows the growth of thick InAs/AlAsSb quantum wells. Quantum well as thick as 7 ML, without defect was achieved by Sb surfactant mediated growth. Further high resolution transmission electron microscopy measurement and geometric phase analysis show that InAs/AlAsSb interfaces are not abrupt. At InAs on AlAsSb interface, the formation of a layer presenting lattice parameter lower than InP leadsmore » to a tensile stress. From energetic consideration, the formation of As rich AlAsSb layer at interface is deduced. At AlAsSb on InAs interface, a compressive layer is formed. The impact on optical properties and the chemical composition of this layer are discussed from microscopic analysis and photoluminescence experiments.« less

Measurement of fluorophore concentrations and fluorescence quantum yield in tissue-simulating phantoms using three diffusion models of steady-state spatially resolved fluorescence.

PubMed

Diamond, Kevin R; Farrell, Thomas J; Patterson, Michael S

2003-12-21

Steady-state diffusion theory models of fluorescence in tissue have been investigated for recovering fluorophore concentrations and fluorescence quantum yield. Spatially resolved fluorescence, excitation and emission reflectance Carlo simulations, and measured using a multi-fibre probe on tissue-simulating phantoms containing either aluminium phthalocyanine tetrasulfonate (AlPcS4), Photofrin meso-tetra-(4-sulfonatophenyl)-porphine dihydrochloride The accuracy of the fluorophore concentration and fluorescence quantum yield recovered by three different models of spatially resolved fluorescence were compared. The models were based on: (a) weighted difference of the excitation and emission reflectance, (b) fluorescence due to a point excitation source or (c) fluorescence due to a pencil beam excitation source. When literature values for the fluorescence quantum yield were used for each of the fluorophores, the fluorophore absorption coefficient (and hence concentration) at the excitation wavelength (mu(a,x,f)) was recovered with a root-mean-square accuracy of 11.4% using the point source model of fluorescence and 8.0% using the more complicated pencil beam excitation model. The accuracy was calculated over a broad range of optical properties and fluorophore concentrations. The weighted difference of reflectance model performed poorly, with a root-mean-square error in concentration of about 50%. Monte Carlo simulations suggest that there are some situations where the weighted difference of reflectance is as accurate as the other two models, although this was not confirmed experimentally. Estimates of the fluorescence quantum yield in multiple scattering media were also made by determining mu(a,x,f) independently from the fitted absorption spectrum and applying the various diffusion theory models. The fluorescence quantum yields for AlPcS4 and TPPS4 were calculated to be 0.59 +/- 0.03 and 0.121 +/- 0.001 respectively using the point source model, and 0.63 +/- 0.03 and 0.129 +/- 0.002 using the pencil beam excitation model. These results are consistent with published values.

Modeling of THz Lasers Based on Intersubband Transitions in Semiconductor Quantum Wells

NASA Technical Reports Server (NTRS)

Liu, Ansheng; Woo, Alex C. (Technical Monitor)

1999-01-01

In semiconductor quantum well structures, the intersubband energy separation can be adjusted to the terahertz (THz) frequency range by changing the well width and material combinations. The electronic and optical properties of these nanostructures can also be controlled by an applied dc electric field. These unique features lead to a large frequency tunability of the quantum well devices. In the on-going project of modeling of the THz lasers, we investigate the possibility of using optical pumping to generate THz radiation based on intersubband transitions in semiconductor quantum wells. We choose the optical pumping because in the electric current injection it is difficult to realize population inversion in the THz frequency range due to the small intersubband separation (4-40 meV). We considered both small conduction band offset (GaAs/AlGaAs) and large band offset (InGaAs/AlAsSb) quantum well structures. For GaAs/AlGaAs quantum wells, mid-infrared C02 lasers are used as pumping sources. For InGaAs/AlAsSb quantum wells, the resonant intersubband transitions can be excited by the near-infrared diode lasers. For three- and four-subband quantum wells, we solve the pumpfield-induced nonequilibrium distribution function for each subband of the quantum well system from a set of rate equations that include both intrasubband and intersubband relaxation processes. Taking into account the coherent interactions between pump and THz (signal) waves, we calculate the optical gain for the THz field. The gain arising from population inversion and stimulated Raman processes is calculated in a unified manner. A graph shows the calculated THz gain spectra for three-subband GaAs/AlGaAs quantum wells. We see that the coherent pump and signal wave interactions contribute significantly to the gain. The pump intensity dependence of the THz gain is also studied. The calculated results are shown. Because of the optical Stark effect and pump-induced population redistribution, the maximum THz gain saturates at larger pump intensities.

Thermodynamic constraints on the amplitude of quantum oscillations

DOE PAGES

Shekhter, Arkady; Modic, K. A.; McDonald, R. D.; ...

2017-03-23

Magneto-quantum oscillation experiments in high-temperature superconductors show a strong thermally induced suppression of the oscillation amplitude approaching the critical dopings [B. J. Ramshaw et al., Science 348, 317 (2014); H. Shishido et al., Phys. Rev. Lett. 104, 057008 (2010); P. Walmsley et al., Phys. Rev. Lett. 110, 257002 (2013)]—in support of a quantum-critical origin of their phase diagrams. In this paper, we suggest that, in addition to a thermodynamic mass enhancement, these experiments may directly indicate the increasing role of quantum fluctuations that suppress the quantum oscillation amplitude through inelastic scattering. Finally, we show that the traditional theoretical approaches beyondmore » Lifshitz-Kosevich to calculate the oscillation amplitude in correlated metals result in a contradiction with the third law of thermodynamics and suggest a way to rectify this problem.« less

A contradictory phenomenon of deshelving pulses in a dilute medium used for lengthened photon storage time.

PubMed

Ham, Byoung S

2010-08-16

Lengthening of photon storage time has been an important issue in quantum memories for long distance quantum communications utilizing quantum repeaters. Atom population transfer into an auxiliary spin state has been adapted to increase photon storage time of photon echoes. In this population transfer process phase shift to the collective atoms is inevitable, where the phase recovery condition must be multiple of 2pi to satisfy rephasing mechanism. Recent adaptation of the population transfer method to atomic frequency comb (AFC) echoes [Afzelius et al., Phys. Rev. Lett. 104, 040503 (2010)], where the population transfer method is originated in a controlled reversible inhomogeneous broadening technique [Moiseev and Kroll, Phys. Rev. Lett. 87, 173601 (2001)], however, shows contradictory phenomenon violating the phase recovery condition. This contradiction in AFC is reviewed as a general case of optical locking applied to a dilute medium for an optical depth-dependent coherence leakage resulting in partial retrieval efficiency.

Conditions for observing emergent SU(4) symmetry in a double quantum dot

NASA Astrophysics Data System (ADS)

Nishikawa, Yunori; Curtin, Oliver J.; Hewson, Alex C.; Crow, Daniel J. G.; Bauer, Johannes

2016-06-01

We analyze conditions for the observation of a low-energy SU(4) fixed point in capacitively coupled quantum dots. One problem, due to dots with different couplings to their baths, has been considered by L. Tosi, P. Roura-Bas, and A. A. Aligia, J. Phys.: Condens. Matter 27, 335601 (2015), 10.1088/0953-8984/27/33/335601. They showed how symmetry can be effectively restored via the adjustment of individual gates voltages, but they make the assumption of infinite on-dot and interdot interaction strengths. A related problem is the difference in the magnitudes between the on-dot and interdot strengths for capacitively coupled quantum dots. Here we examine both factors, based on a two-site Anderson model, using the numerical renormalization group to calculate the local spectral densities on the dots and the renormalized parameters that specify the low-energy fixed point. Our results support the conclusions of Tosi et al. that low-energy SU(4) symmetry can be restored, but asymptotically achieved only if the interdot interaction U12 is greater than or of the order of the bandwidth of the coupled conduction bath D , which might be difficult to achieve experimentally. By comparing the SU(4) Kondo results for a total dot occupation ntot=1 and 2, we conclude that the temperature dependence of the conductance is largely determined by the constraints of the Friedel sum rule rather than the SU(4) symmetry and suggest that an initial increase of the conductance with temperature is a distinguishing characteristic feature of an ntot=1 universal SU(4) fixed point.

Asymmetric quantum well broadband thyristor laser

NASA Astrophysics Data System (ADS)

Liu, Zhen; Wang, Jiaqi; Yu, Hongyan; Zhou, Xuliang; Chen, Weixi; Li, Zhaosong; Wang, Wei; Ding, Ying; Pan, Jiaoqing

2017-11-01

A broadband thyristor laser based on InGaAs/GaAs asymmetric quantum well (AQW) is fabricated by metal organic chemical vapor deposition (MOCVD). The 3-μm-wide Fabry-Perot (FP) ridge-waveguide laser shows an S-shape I-V characteristic and exhibits a flat-topped broadband optical spectrum coverage of ~27 nm (Δ-10 dB) at a center wavelength of ~1090 nm with a total output power of 137 mW under pulsed operation. The AQW structure was carefully designed to establish multiple energy states within, in order to broaden the gain spectrum. An obvious blue shift emission, which is not generally acquired in QW laser diodes, is observed in the broadening process of the optical spectrum as the injection current increases. This blue shift spectrum broadening is considered to result from the prominent band-filling effect enhanced by the multiple energy states of the AQW structure, as well as the optical feedback effect contributed by the thyristor laser structure. Project supported by the National Natural Science Foundation of China (Nos. 61604144, 61504137). Zhen Liu and Jiaqi Wang contributed equally to this work.

Relativistic quantum private database queries

NASA Astrophysics Data System (ADS)

Sun, Si-Jia; Yang, Yu-Guang; Zhang, Ming-Ou

2015-04-01

Recently, Jakobi et al. (Phys Rev A 83, 022301, 2011) suggested the first practical private database query protocol (J-protocol) based on the Scarani et al. (Phys Rev Lett 92, 057901, 2004) quantum key distribution protocol. Unfortunately, the J-protocol is just a cheat-sensitive private database query protocol. In this paper, we present an idealized relativistic quantum private database query protocol based on Minkowski causality and the properties of quantum information. Also, we prove that the protocol is secure in terms of the user security and the database security.

MOVPE Growth of LWIR AlInAs/GaInAs/InP Quantum Cascade Lasers: Impact of Growth and Material Quality on Laser Performance

DTIC Science & Technology

2017-02-01

MOVPE Growth of LWIR AlInAs/GaInAs/InP Quantum Cascade Lasers: Impact of Growth and Material Quality on Laser Performance (Invited paper) Christine A...epitaxial layers in quantum cascade lasers (QCLs) has a primary impact on QCL operation, and establishing correlations between epitaxial growth and materials...QCLs emitting in this range. Index terms – Quantum cascade lasers, semiconductor growth, semiconductor epitaxial layers, infrared emitters. I

High power operation of λ ∼ 5.2–11 μm strain balanced quantum cascade lasers based on the same material composition

DOE Office of Scientific and Technical Information (OSTI.GOV)

Bandyopadhyay, N.; Bai, Y.; Slivken, S.

2014-08-18

A technique based on composite quantum wells for design and growth of strain balanced Al{sub 0.63}In{sub 0.37}As/Ga{sub 0.35}In{sub 0.65}As/Ga{sub 0.47}In{sub 0.53}As quantum cascade lasers (QCLs) by molecular beam epitaxy (MBE), emitting in 5.2–11 μm wavelength range, is reported. The strained Al{sub 0.63}In{sub 0.37}As provides good electron confinement at all wavelengths, and strain balancing can be achieved through composite wells of Ga{sub 0.35}In{sub 0.65}As/Ga{sub 0.47}In{sub 0.53}As for different wavelength. The use of these fixed composition materials can avoid the need for frequent calibration of a MBE reactor to grow active regions with different strain levels for different wavelengths. Experimental results for QCLsmore » emitting at 5.2, 6.7, 8.2, 9.1, and 11 μm exhibit good wall plug efficiencies and power across the whole wavelength range. It is shown that the emission wavelength can be predictably changed using the same design template. These lasers are also compatible with a heterogeneous broadband active region, consisting of multiple QCL cores, which can be produced in a single growth run.« less

Effect of uniaxial stress on electroluminescence, valence band modification, optical gain, and polarization modes in tensile strained p-AlGaAs/GaAsP/n-AlGaAs laser diode structures: Numerical calculations and experimental results

NASA Astrophysics Data System (ADS)

Bogdanov, E. V.; Minina, N. Ya.; Tomm, J. W.; Kissel, H.

2012-11-01

The effects of uniaxial compression in [110] direction on energy-band structures, heavy and light hole mixing, optical matrix elements, and gain in laser diodes with "light hole up" configuration of valence band levels in GaAsP quantum wells with different widths and phosphorus contents are numerically calculated. The development of light and heavy hole mixing caused by symmetry lowering and converging behavior of light and heavy hole levels in such quantum wells under uniaxial compression is displayed. The light or heavy hole nature of each level is established for all considered values of uniaxial stress. The results of optical gain calculations for TM and TE polarization modes show that uniaxial compression leads to a significant increase of the TE mode and a minor decrease of the TM mode. Electroluminescence experiments were performed under uniaxial compression up to 5 kbar at 77 K on a model laser diode structure (p-AlxGa1-xAs/GaAs1-yPy/n-AlxGa1-xAs) with y = 0.16 and a quantum well width of 14 nm. They reveal a maximum blue shift of 27 meV of the electroluminescence spectra that is well described by the calculated change of the optical gap and the increase of the intensity being referred to a TE mode enhancement. Numerical calculations and electroluminescence data indicate that uniaxial compression may be used for a moderate wavelength and TM/TE intensity ratio tuning.

Observing quantum trajectories: From Mott’s problem to quantum Zeno effect and back

DOE Office of Scientific and Technical Information (OSTI.GOV)

Gosson, Maurice de, E-mail: maurice.de.gosson@univie.ac.at; Hiley, Basil; TPRU, Birkbeck, University of London, Malet Street, London WC1E 7HX

2016-11-15

The experimental results of Kocsis et al., Mahler et al. and the proposed experiments of Morley et al. show that it is possible to construct “trajectories” in interference regions in a two-slit interferometer. These results call for a theoretical re-appraisal of the notion of a “quantum trajectory” first introduced by Dirac and in the present paper we re-examine this notion from the Bohm perspective based on Hamiltonian flows. In particular, we examine the short-time propagator and the role that the quantum potential plays in determining the form of these trajectories. These trajectories differ from those produced in a typical particlemore » tracker and the key to this difference lies in the active suppression of the quantum potential necessary to produce Mott-type trajectories. We show, using a rigorous mathematical argument, how the active suppression of this potential arises. Finally we discuss in detail how this suppression also accounts for the quantum Zeno effect.« less

Progress toward scalable tomography of quantum maps using twirling-based methods and information hierarchies

DOE Office of Scientific and Technical Information (OSTI.GOV)

Lopez, Cecilia C.; Theoretische Physik, Universitaet des Saarlandes, D-66041 Saarbruecken; Departament de Fisica, Universitat Autonoma de Barcelona, E-08193 Bellaterra

2010-06-15

We present in a unified manner the existing methods for scalable partial quantum process tomography. We focus on two main approaches: the one presented in Bendersky et al. [Phys. Rev. Lett. 100, 190403 (2008)] and the ones described, respectively, in Emerson et al. [Science 317, 1893 (2007)] and Lopez et al. [Phys. Rev. A 79, 042328 (2009)], which can be combined together. The methods share an essential feature: They are based on the idea that the tomography of a quantum map can be efficiently performed by studying certain properties of a twirling of such a map. From this perspective, inmore » this paper we present extensions, improvements, and comparative analyses of the scalable methods for partial quantum process tomography. We also clarify the significance of the extracted information, and we introduce interesting and useful properties of the {chi}-matrix representation of quantum maps that can be used to establish a clearer path toward achieving full tomography of quantum processes in a scalable way.« less

Metal organic vapour-phase epitaxy growth of GaN wires on Si (111) for light-emitting diode applications

PubMed Central

2013-01-01

GaN wires are grown on a Si (111) substrate by metal organic vapour-phase epitaxy on a thin deposited AlN blanket and through a thin SiNx layer formed spontaneously at the AlN/Si interface. N-doped wires are used as templates for the growth of core-shell InGaN/GaN multiple quantum wells coated by a p-doped shell. Standing single-wire heterostructures are connected using a metallic tip and a Si substrate backside contact, and the electroluminescence at room temperature and forward bias is demonstrated at 420 nm. This result points out the feasibility of lower cost nitride-based wires for light-emitting diode applications. PMID:23391377

Temperature-dependent time-resolved photoluminescence measurements of (1-101)-oriented semi-polar AlGaN/GaN MQWs

NASA Astrophysics Data System (ADS)

Rosales, Daniel; Gil, Bernard; Monavarian, Morteza; Zhang, Fan; Okur, Serdal; Izyumskaya, Natalia; Avrutin, Vitaliy; Özgür, Ümit; Morkoç, Hadis

2015-03-01

We studied the temperature dependence and the recombination dynamics of the photoluminescence of (1-101)-oriented semi-polar Al0.2Ga0.8N/GaN multiple quantum wells (MQW). The polarized low-temperature PL measurements reveal that radiative recombination exhibit an anisotropic behavior. The PL intensity at room temperature is reduced by one order of magnitude with respect to low temperature. The radiative decay time exhibits a mixed behavior: it is roughly constant between 8K to ranging near 140-150K and then rapidly increases with a slope of 10 ps.K-1. This behavior is indicative of coexistence of localized excitons and free excitons which relative proportion are statistically computed.

Measurements of spin life time of an antimony-bound electron in silicon

NASA Astrophysics Data System (ADS)

Lu, T. M.; Bishop, N. C.; Tracy, L. A.; Blume-Kohout, R.; Pluym, T.; Wendt, J. R.; Dominguez, J.; Lilly, M. P.; Carroll, M. S.

2013-03-01

We report our measurements of spin life time of an antimony-bound electron in silicon. The device is a double-top-gated silicon quantum dot with antimony atoms implanted near the quantum dot region. A donor charge transition is identified by observing a charge offset in the transport characteristics of the quantum dot. The tunnel rates on/off the donor are first characterized and a three-level pulse sequence is then used to measure the spin populations at different load-and-wait times in the presence of a fixed magnetic field. The spin life time is extracted from the exponential time dependence of the spin populations. A spin life time of 1.27 seconds is observed at B = 3.25 T. This work was performed, in part, at the Center for Integrated Nanotechnologies, a U.S. DOE, Office of Basic Energy Sciences user facility. The work was supported by the Sandia National Laboratories Directed Research and Development Program. Sandia National Laboratories is a multi-program laboratory managed and operated by Sandia Corporation, a wholly owned subsidiary of Lockheed Martin Corporation, for the U.S. Department of Energy's National Nuclear Security Administration under contract DE-AC04-94AL85000.

A Local Quantum Phase Transition in YFe 2Al 10

DOE Office of Scientific and Technical Information (OSTI.GOV)

Gannon, W J.; Zaliznyak, Igor A.; Wu, L. S.

Here, a phase transition occurs when correlated regions of a new phase grow to span the system and the fluctuations within the correlated regions become long-lived. Here we present neutron scattering measurements showing that this conventional picture must be replaced by a new paradigm in YFe 2Al 10, a compound that forms naturally very close to a T = 0 quantum phase transition. Fully quantum mechanical fluctuations of localized moments are found to diverge at low energies and temperatures, however the fluctuating moments are entirely without spatial correlations. Zero temperature order in YFe 2Al 10 is achieved by a newmore » and entirely local type of quantum phase transition that may originate with the creation of the moments themselves.« less

A Local Quantum Phase Transition in YFe 2Al 10

DOE PAGES

Gannon, W J.; Zaliznyak, Igor A.; Wu, L. S.; ...

2018-06-29

Here, a phase transition occurs when correlated regions of a new phase grow to span the system and the fluctuations within the correlated regions become long-lived. Here we present neutron scattering measurements showing that this conventional picture must be replaced by a new paradigm in YFe 2Al 10, a compound that forms naturally very close to a T = 0 quantum phase transition. Fully quantum mechanical fluctuations of localized moments are found to diverge at low energies and temperatures, however the fluctuating moments are entirely without spatial correlations. Zero temperature order in YFe 2Al 10 is achieved by a newmore » and entirely local type of quantum phase transition that may originate with the creation of the moments themselves.« less

Heat-bath algorithmic cooling with correlated qubit-environment interactions

NASA Astrophysics Data System (ADS)

Rodríguez-Briones, Nayeli A.; Li, Jun; Peng, Xinhua; Mor, Tal; Weinstein, Yossi; Laflamme, Raymond

2017-11-01

Cooling techniques are essential to understand fundamental thermodynamic questions of the low-energy states of physical systems, furthermore they are at the core of practical applications of quantum information science. In quantum computing, this controlled preparation of highly pure quantum states is required from the state initialization of most quantum algorithms to a reliable supply of ancilla qubits that satisfy the fault-tolerance threshold for quantum error correction. Heat-bath algorithmic cooling has been shown to purify qubits by controlled redistribution of entropy and multiple contact with a bath, not only for ensemble implementations but also for technologies with strong but imperfect measurements. In this paper, we show that correlated relaxation processes between the system and environment during rethermalization when we reset hot ancilla qubits, can be exploited to enhance purification. We show that a long standing upper bound on the limits of algorithmic cooling Schulman et al (2005 Phys. Rev. Lett. 94, 120501) can be broken by exploiting these correlations. We introduce a new tool for cooling algorithms, which we call ‘state-reset’, obtained when the coupling to the environment is generalized from individual-qubits relaxation to correlated-qubit relaxation. Furthermore, we present explicit improved cooling algorithms which lead to an increase of purity beyond all the previous work, and relate our results to the Nuclear Overhauser Effect.

Split, but still attached

NASA Astrophysics Data System (ADS)

Cavalcanti, Daniel

2018-04-01

Recent years have witnessed the beginning of the second quantum revolution, in which an impressive degree of control over quantum systems has led to several applications in quantum communication, computation, and sensing, along with new host materials reaching commercial success. A key driver behind many of these applications is entanglement, a form of correlation that can develop between quantum systems that is stronger than any type of correlation that can exist between the macroscopic systems we deal with in our everyday life. The creation, manipulation, storage, and detection of entanglement have posed some of the biggest challenges to quantum physicists. On pages 409, 413, and 416 of this issue, Fadel et al. (1), Kunkel et al. (2), and Lange et al. (3), respectively, describe three independent experiments in which entanglement is observed in a system composed of thousands of ultracold atoms. More importantly, the entanglement is observed between atoms occupying different spatial regions, which paves the way to new applications of these systems.

Metamorphic InAs quantum well lasers on InP substrates with different well shapes and waveguides

NASA Astrophysics Data System (ADS)

Gu, Y.; Zhang, Y. G.; Chen, X. Y.; Ma, Y. J.; Ji, W. Y.; Xi, S. P.; Du, B.; Shi, Y. H.; Li, A. Z.

2017-11-01

The effects of well shapes and waveguide materials on InP-based InAs quantum well lasers have been investigated. The laser structures were grown on metamorphic In0.65Al0.35As buffers. A novel trapezoidal quantum well composed of InyGa1-yAs grading and InAs layer was used to improve the quality of quantum well. Quaternary In0.65Al0.2Ga0.15As waveguide was applied instead of ternary In0.65Ga0.35As to enhance the carrier injection. The material qualities have been characterized by X-ray diffraction, transmission electron microscopy and photoluminescence measurements, while the device properties of the lasers with various structures were investigated at different temperatures. Results show that the laser performances have been improved by the use of trapezoidal quantum wells and InAlGaAs waveguides.

Structure variation of the index of refraction of GaAs-AlAs superlattices and multiple quantum wells

NASA Technical Reports Server (NTRS)

Kahen, K. B.; Leburton, J. P.

1985-01-01

A detailed calculation of the index refraction of various GaAs-AlAs superlattices is presented for the first time. The calculation is performed by using a hybrid approach which combines the k-p method with the pseudopotential technique. Appropriate quantization conditions account for the influence of the superstructures on the electronic properties of the systems. The results of the model are in very good agreement with the experimental data. In comparison with the index of refraction of the corresponding AlGaAs alloy, characterized by the same average mole fraction of Al, the results indicate that the superlattice index of refraction values attain maxima at the various quantized transition energies. For certain structures the difference can be as large as 2 percent. These results suggest that the waveguiding and dispersion relation properties of optoelectronic devices can be tailored to design for specific optical application by an appropriate choice of the superlattice structure parameters.

Effect of quantum-well thickness on the optical polarization of AlGaN-based ultraviolet light-emitting diodes

NASA Astrophysics Data System (ADS)

Liu, Cheng; Zhang, Jing

2018-02-01

Optical polarization from AlGaN quantum well (QW) is crucial for realizing high-efficiency deep-ultraviolet (UV) light-emitting diodes (LEDs) because it determines the light emission patterns and light extraction mechanism of the devices. As the Al-content of AlGaN QW increases, the valence bands order changes and consequently the light polarization switches from transverse-electric (TE) to transverse-magnetic (TM) owing to the different sign and the value of the crystal field splitting energy between AlN (-169meV) and GaN (10meV). Several groups have reported that the ordering of the bands and the TE/TM crossover Al-content could be influenced by the strain state and the quantum confinement from the AlGaN QW system. In this work, we investigate the influence of QW thickness on the optical polarization switching point from AlGaN QW with AlN barriers by using 6-band k•p model. The result presents a decreasing trend of the critical Al-content where the topmost valence band switches from heave hole (HH) to crystal field spilt-off (CH) with increasing QW thicknesses due to the internal electric field and the strain state from the AlGaN QW. Instead, the TE- and TM-polarized spontaneous emission rates switching Al-content rises first and falls later because of joint consequence of the band mixing effect and the Quantum Confined Stark Effect. The reported optical polarization from AlGaN QW emitters in the UV spectral range is assessed in this work and the tendency of the polarization switching point shows great consistency with the theoretical results, which deepens the understanding of the physics from AlGaN QW UV LEDs.

High extraction efficiency ultraviolet light-emitting diode

DOEpatents

Wierer, Jonathan; Montano, Ines; Allerman, Andrew A.

2015-11-24

Ultraviolet light-emitting diodes with tailored AlGaN quantum wells can achieve high extraction efficiency. For efficient bottom light extraction, parallel polarized light is preferred, because it propagates predominately perpendicular to the QW plane and into the typical and more efficient light escape cones. This is favored over perpendicular polarized light that propagates along the QW plane which requires multiple, lossy bounces before extraction. The thickness and carrier density of AlGaN QW layers have a strong influence on the valence subband structure, and the resulting optical polarization and light extraction of ultraviolet light-emitting diodes. At Al>0.3, thinner QW layers (<2.5 nm are preferred) result in light preferentially polarized parallel to the QW plane. Also, active regions consisting of six or more QWs, to reduce carrier density, and with thin barriers, to efficiently inject carriers in all the QWs, are preferred.

High efficiency and enhanced ESD properties of UV LEDs by inserting p-GaN/p-AlGaN superlattice

NASA Astrophysics Data System (ADS)

Huang, Yong; Li, PeiXian; Yang, Zhuo; Hao, Yue; Wang, XiaoBo

2014-05-01

Significantly improved electrostatic discharge (ESD) properties of InGaN/GaN-based UV light-emitting diode (LED) with inserting p-GaN/p-AlGaN superlattice (p-SLs) layers (instead of p-AlGaN single layer) between multiple quantum wells and Mg-doped GaN layer are reported. The pass yield of the LEDs increased from 73.53% to 93.81% under negative 2000 V ESD pulses. In addition, the light output power (LOP) and efficiency droop at high injection current were also improved. The mechanism of the enhanced ESD properties was then investigated. After excluding the effect of capacitance modulation, high-resolution X-ray diffraction (XRD) and atomic force microscope (AFM) measurements demonstrated that the dominant mechanism of the enhanced ESD properties is the material quality improved by p-SLs, which indicated less leakage paths, rather than the current spreading improved by p-SLs.

Modulating optical polarization properties of Al-rich AlGaN/AlN quantum well by controlling wavefunction overlap

NASA Astrophysics Data System (ADS)

Chen, X. J.; Yu, T. J.; Lu, H. M.; Yuan, G. C.; Shen, B.; Zhang, G. Y.

2013-10-01

Using modified k.p perturbation method, the optical polarization properties of Al-rich AlGaN/AlN quantum wells (QWs) are studied. It is found that change of wavefunction overlaps between conduction band and valance subbands of heavy hole, light hole, and crystal-field split off hole is different. Such difference leads to the overturn of polarization degree and modulates optical polarization properties as well width and strain vary. This prompts that changing wavefunction overlaps of electron and hole can lead to a way to modulate optical polarization properties of Al-rich AlGaN/AlN QWs, on no condition that valence band order changes.

170 GHz Uni-Traveling Carrier Photodiodes for InP-based photonic integrated circuits.

PubMed

Rouvalis, E; Chtioui, M; van Dijk, F; Lelarge, F; Fice, M J; Renaud, C C; Carpintero, G; Seeds, A J

2012-08-27

We demonstrate the capability of fabricating extremely high-bandwidth Uni-Traveling Carrier Photodiodes (UTC-PDs) using techniques that are suitable for active-passive monolithic integration with Multiple Quantum Well (MQW)-based photonic devices. The devices achieved a responsivity of 0.27 A/W, a 3-dB bandwidth of 170 GHz, and an output power of -9 dBm at 200 GHz. We anticipate that this work will deliver Photonic Integrated Circuits with extremely high bandwidth for optical communications and millimetre-wave applications.

Growth of analog Al(x)Ga(1-x)As/GaAs parabolic quantum wells by molecular beam epitaxy

NASA Astrophysics Data System (ADS)

Wang, S. M.; Treideris, G.; Chen, W. Q.; Andersson, T. G.

1993-01-01

Parabolic Al(x)Ga(1-x)As/GaAs quantum wells have been grown by molecular beam epitaxy with linear ramping of the Al effusion cell temperature, where the ramping rate was carefully analyzed to avoid a flux lag. The calculated potential profile from the temperature variation was very close to the parabolic one. Low-temperature photoluminescence showed clear interband transitions up to the n = 3 sublevels. The equal energy spacing between adjacent transitions involving heavy-hole states confirmed the parabolic shape of the quantum well.

On the robustness of bucket brigade quantum RAM

NASA Astrophysics Data System (ADS)

Arunachalam, Srinivasan; Gheorghiu, Vlad; Jochym-O'Connor, Tomas; Mosca, Michele; Varshinee Srinivasan, Priyaa

2015-12-01

We study the robustness of the bucket brigade quantum random access memory model introduced by Giovannetti et al (2008 Phys. Rev. Lett.100 160501). Due to a result of Regev and Schiff (ICALP ’08 733), we show that for a class of error models the error rate per gate in the bucket brigade quantum memory has to be of order o({2}-n/2) (where N={2}n is the size of the memory) whenever the memory is used as an oracle for the quantum searching problem. We conjecture that this is the case for any realistic error model that will be encountered in practice, and that for algorithms with super-polynomially many oracle queries the error rate must be super-polynomially small, which further motivates the need for quantum error correction. By contrast, for algorithms such as matrix inversion Harrow et al (2009 Phys. Rev. Lett.103 150502) or quantum machine learning Rebentrost et al (2014 Phys. Rev. Lett.113 130503) that only require a polynomial number of queries, the error rate only needs to be polynomially small and quantum error correction may not be required. We introduce a circuit model for the quantum bucket brigade architecture and argue that quantum error correction for the circuit causes the quantum bucket brigade architecture to lose its primary advantage of a small number of ‘active’ gates, since all components have to be actively error corrected.

PREFACE: CEWQO Topical Issue CEWQO Topical Issue

NASA Astrophysics Data System (ADS)

Bozic, Mirjana; Man'ko, Margarita

2009-09-01

This topical issue of Physica Scripta collects selected peer-reviewed contributions based on invited and contributed talks and posters presented at the 15th Central European Workshop on Quantum Optics (CEWQO) which took place in Belgrade 29 May-3 June 2008 (http://cewqo08.phy.bg.ac.yu). On behalf of the whole community took place in Belgrade 29 May-3 June 2008 (http://cewqo08.phy.bg.ac.yu, cewqo08.phy.bg.ac.yu). On behalf of the whole community of the workshop, we thank the referees for their careful reading and useful suggestions which helped to improve all of the submitted papers. A brief description of CEWQO The Central European Workshop on Quantum Optics is a series of conferences started informally in Budapest in 1992. Sometimes small events transform into important conferences, as in the case of CEWQO. Professor Jozsef Janszky, from the Research Institute of Solid State Physics and Optics, is the founder of this series. Margarita Man'ko obtained the following information from Jozsef Janszky during her visit to Budapest, within the framework of cooperation between the Russian and Hungarian Academies of Sciences in 2005. He organized a small workshop on quantum optics in Budapest in 1992 with John Klauder as a main speaker. Then, bearing in mind that a year before Janszky himself was invited by Vladimir Buzek to give a seminar on the same topic in Bratislava, he decided to assign the name 'Central European Workshop on Quantum Optics', considering the seminar in Bratislava to be the first workshop and the one in Budapest the second. The third formal workshop took place in Bratislava in 1993 organized by Vladimir Buzek, then in 1994 (Budapest, by Jozsef Janszky), 1995 and 1996 (Budmerice, Slovakia, by Vladimir Buzek), 1997 (Prague, by Igor Jex), 1999 (Olomouc, Czech Republic, by Zdenek Hradil), 2000 (Balatonfüred, Hungary, by Jozsef Janszky ), 2001 (Prague, by Igor Jex), 2002 (Szeged, Hungary, by Mihaly Benedict), 2003 (Rostock,Germany, by Werner Vogel and Sascha Wallentowitz), 2004 (Trieste, Italy, by Naseem Rahman and Sascha Wallentowitz), 2005 (Bilkent, Ankara, by Alexander Shumovsky), 2006 (Vienna, by Helmut Rauch), 2007 (Palermo, Italy, by Antonino Messina) and 2008 (Belgrade, by Mirjana Bozic). The CEWQO series developed in two directions following the rapid development of quantum optics and the transitional development of the scientific collaboration of Central European researchers with researchers from old and new emerging Central European countries, and from all over the world. The topics discussed at CEWQO 08 were divided into ten groups that aimed to cover the broad scope of modern quantum optics: Fundamental aspects of quantum optics and quantum mechanics Single photons and photon pairs Cavity and circuit QED Atoms in intense fields Neutron, atom and molecular quantum optics Quantum gases and fluids Coherence, entanglement and decoherence Optical properties of condensed matter and nanostructures Open quantum systems and chaos Quantum information processing Central European Workshops on Quantum Optics realize and are consistent with a wider idea, and a social, economical, cultural and political program promoted since 1989 by the Central European Initiative (CEI), the main goal of which was to help transition countries in Central Europe to become closer to the EU. The resulting support of the CEI, first obtained thanks to the scientific reputation, organizing activities, and efforts of Helmut Rauch, has been very important for the organization of the CEWQO in recent years, particularly in 2008. The support of the Sixth and Seventh Framework Programs of the European Commission was also very important. A short review of papers in this topical issue A principal role in this topical issue is played by the photon. Vuletic et al describe the mapping of the photon-polarization state onto a single collective-spin excitation (magnon) shared between two atomic ensembles. A heralded quantum memory based on this mapping is demonstrated. Dodonov derives a formula which predicts a photon generation rate in a cavity due to strong variations of the complex dielectric function in a thin layer near an ideally conducting wall (simulation of the dynamic Casimir effect). Skenderovic reports how photons from two femptosecond laser pulses prepare a large molecule in a coherent superposition of vibrational states. The time evolution of this state is interrogated with a third (delayed) pulse which creates a fourth wave, the signal, giving information on the molecular dynamics. Dimitrova et al present lecture demonstrations of interference and quantum erasing with single photons. By considering electromagnetic energy flow lines as photon paths Davidovic et al explain the emergence of an interference pattern in the process of the accumulation of single photon events behind an interference grating. Atoms in a cavity, atom-atom interactions, interactions of atoms with photons and macroscopic bodies is the next important topic in this topical issue. Khanbekyan et al deal with the problem of the spontaneous emission of an excited atom in a high-Q cavity and investigate the regime when the emitted photon belongs to a wave packet simultaneously located inside and outside the cavity. Sambale et al study the resonant Casimir-Polder potential of an excited atom in front of meta-material half-space and show that for long distances it exhibits attenuated oscillations, while close to the surface the potential becomes attractive or repulsive. Buhmann et al study the nonequilibrium Casimir-Polder force on an atom prepared in an incoherent superposition of internal energy-eigenstates, which is placed in a magnetoelectric environment of nonuniform temperature. Lazarou et al discuss how two atoms, interacting with a single cavity, can be coherently evolved into an entangled state when they are controlled by a sequence of Gaussian pulses, named frequency chirps. Bougouffa et al report on field quantization between two parallel conducting plates (modifications of the decay rate between such plates) and the three-level Jaynes-Cummings dynamics in the single-mode regime. Tomas studies the interaction between two atoms, one excited and the other in its ground state near the interface between two media. It is shown that the nonretarded van der Waals force gets enhanced by almost three orders of magnitude at the surface mode resonance. Vuskovic et al write about the plasma treatment of a bulk Nb surface which is very efficient for producing high-Q factor microwave cavities. Nemeth et al review the theory and experiments of the coherently pumped micromaser. With varied atomic inversion in a coherently pumped micromaser, a sudden switch occurs between two distinctively different field states, with high and low photon numbers. Moi et al show that alkali-metal atoms adsorbed either in organic films or in porous glass are released into the vapor phase (desorbed) under illumination, the action of many photons. Several papers are devoted to matter-wave interference and quantum fluids. By analyzing unavoidable quantum losses as they appear in neutron phase-echo and spin rotation experiments, Rauch concludes that basic quantum irreversibility exists in neutron interferometry. Rauch also shows how entanglement effects in a single particle system demonstrate quantum contextuality, and then argues that a quantum system carries much more information than is usually extracted. The time evolution of the wave function of an atom hit by a photon in a three-grating interferometer is used by Arsenovic et al to interpret the intriguing results of the corresponding experiment by Chapman et al. Grujic et al demonstrate dark Raman resonance due to Ramsey interference in a spatially separated pump and probe laser beams co-propagating through a pure 87Rb vapor cell. Obtained EIT profiles are explained by solving Bloch's equations for an atom in a magnetic field moving through pump and probe laser regions. Gawlik et al present results of experiments on finite-temperature Bose-Einstein condensate of 87Rb atoms in a magnetic trap. In the Thomas-Fermi (TF) regime, the condensate dynamics has a hydrodynamic character. The dynamics of non-TF condensates reflect the interaction between BEC and non-condensed thermal atoms. Atoms in intense fields is the subject of several papers. Gainutdinov et al show that the contribution to the radiative shift of the side bands of the Mollow spectrum is very significant. Using Gell-Mann, Low S-matrix formalism, and QED, Glushkov et al present an approach to study multiphoton processes during the interaction of an atom with a realistic intense laser field. The paper by Khetselius is devoted to two related problems: the calculation of the atomic hyperfine structure of the Li-like ions and an estimation of the effectiveness of the three-step scheme of isotope separation for the case of Cs isotopes. Vvedenskii et al present the results concerning the excitation of a residual quasi-dc current in the plasma, which are based on the solution of the time-dependent Schrödinger equation for the hydrogen atom in a few-cycle laser pulse. Information processing is one of the important aspects of this issue and it is considered in several papers. M Man'ko et al presented a new notion of tomographic entropy and new entropic uncertainty relations applied to the problem of light propagation in optical fibers. Nonlinearity in the quantum-information processing is considered in the paper by Chirkin et al. D'Arrigo et al investigated a very specific semiclassical Hamiltonian model of a quantum memory channel. They evaluated the performance of the three-qubit code error correcting code by means of entanglement fidelity. The fundamental aspects of quantum optics are the subject of several papers, namely, Bell's inequalities are studied in the paper by Andreev, the star-product quantization scheme was discussed by O Man'ko, and probabilistic representation was investigated in the paper by Adam et al. In the paper by V Man'ko et al the diagonal representation of the density operator (usually called P-function of Glauber-Sudarshan) is related to the star-product quantization method and to the tomographic-probability representation of quantum states. Laskowski et al suggest an elegant geometrical criterion for the separability, which is based on the local correlation measurements readily available in the laboratory. Mizrahi describes a method to derive the Pauli-Schrödinger equation starting from a simple model of a qubit carried by a massive particle. By analyzing unavoidable quantum losses as they appear in neutron phase-echo and spin rotation experiments, Rauch concludes that basic quantum irreversibility exists in neutron interferometry. Rauch also shows how entanglement effects in a single particle system demonstrate quantum contextuality, and then argues that a quantum system carries much more information than is usually extracted. Kupczynski advocates various statistical tests which could be used to search for a fine structure in experimental data in order to answer the question: is quantum theory predictably complete? For an ion confined within a Paul trap, Mihalcea constructs an invariant operator based on the Lews and Riesenfeld approach and determines the spectrum of the quasienergy operator. Popov et al construct pair-coherent states of the Barut-Girardello kind for two noninteracting subsystems of pseudoharmonic oscillators and examine their statistical properties in different regions of parameters. The property of entanglement, considered to be the most intriguing property of composite quantum systems, has been an important research subject in recent years. It is considered to be a possible resource for quantum computation and communication. Therefore, a substantial number of papers in this topical issue is devoted to entanglement. Leon et al write that two-photon emission from two atoms initially excited in a common electromagnetic vacuum may generate atom-atom entanglement. Dömötör et al elucidate a connection between entanglement and coherent states. Earlier they proved that in the symmetric subspace of a system of N qubits a pure state is not globally entangled, if and only if, it is a coherent state. Here they extend this proof to a system of N 'quKits' (subsystems of arbitrary finite dimension K). Napoli et al compute exactly localizable entanglement as a function of temperature for the system of three interacting spins in a thermal state. Isar considers entanglement in open quantum dynamics by studying the system of two independent oscillators interacting with the general environment. He proposes some special parameters of the environment that manifest interesting properties (e.g., the environment is entangling initially separable states). Lindén et al study the decay of entanglement in rings of qubits that live in the Markov environment. They use the entanglement of formation as the measure whose time evolution announces (or not) the decay. Jivulescu et al consider the time evolution of a spin-1/2 particle nonuniformly coupled through the Heisenberg interaction to the environment composed of N spins. Considering arbitrary initial conditions the authors determine a numerically manipulative general solution from which information on full dynamics may be extracted. Ferraro et al investigate the entanglement evolution of two qubits interacting with a common environment through a Heisenberg XX mechanism and show that the phenomena of entanglement hidden death and entanglement hidden revival take place. Stochastic processes have been very important in quantum optics. Pascazio et al review and compare three algorithms for the generation of sequences of symmetric stable Levy random variables. They draw conclusions on the efficiency of the algorithms used and on some applications in quantum optics. Hul et al report on the possibilities of explaining the statistical properties of the spectra of irregular quantum systems by invoking the random matrix theory. The authors calculated the spectra, spectral correlation functions, and the distributions of avoided crossings, for two types of idealized model of one-dimensional quantum wires forming a quantum graph. Sirko et al present the experimental study of microwave networks displaying an irregular hexagonal structure. In a sense, these networks model quantum graphs with special properties. Kiss et al consider the recurrence of quantum walks on lattices by studying the properties of the generalized Polya number. The properties of this number are compared for classical and quantum cases. A number of interesting papers are devoted to the optical properties of condensed matter and nanostructures. Gorelik derives analytical expressions for photonic dispersion law in 3D photonic crystals filled by dielectrics or metal. Nemilentsau et al evaluate the photon density of states near a single-wall finite length carbon nanotube. The authors found definite singularities in the density of photon states that may be observable in light-matter interaction, thermal radiation distribution, and micromechanical phenomena related to Casimir forces. Perinova et al pay attention to the interesting relationship between microscopic and macroscopic approaches to the quantization of the electromagnetic field in the medium. They examine the problem of a source atom radiating into a dielectric. Radovanovic et al present an extended approach for estimating the tunneling times through all linear materials, including metamaterials having a negative refractive index. Vasic et al describe the optical design of 2D confined structures with metamaterial layers which is based on coordinate transformations. Using the Green's functions method, Ilic et al analyze the influence of boundaries of the molecular ultrathin film on exciton dispersion law. Jeknic-Dugic proposes the model of optically induced transitions in an electronic subsystem of a bio-molecule that is able to describe relatively slow conformational transitions of a bio-molecule. Stef et al present their goal to grow good quality YbF3-doped and PbF2-codoped CaF2 crystals with high divalent Ytterbium content for investigating the influence of Pb2+ ions on the valence conversion, on the dielectric and optical absorption spectra. Vasile et al present the fabrication and SEM and photoluminescence characterization of zinc gallate doped with Eu and Er ions. The results could be important for photonic applications of spinels. Vasiljevic et al present the process of production of microlenses by irradiation of a tot'hema eosin sensitized gelatin (TESG) layer with a laser beam (2nd Nd:YAG harmonic, 532 nm). Microlenses chemically processed after production with 10% alum solution had near diffraction limited performance. The production and application of microlenses are fast expanding because they are increasingly used in biomedical and general optics. Prizes for the poster presentations Authors under 35 years of age were invited to take part in the poster competition. Two first prizes EX-AEQUOAE were awarded to Zoran Grujic from the Institute of Physics, Belgrade, Serbia, for the poster 'Numerical simulation of Raman-Ramsey effects induced by thermal motion of rubidium atoms' and to Andrey Popov from Altai State Technical University, Bernaul, Russia, for the poster 'Beryllium atoms in intense fields'. The third prize was awarded to Alex Crosse from Imperial College, London, UK, for the poster 'Quantum electrodynamics in absorbing nonlinear media'. Members of the Jury were: Mirjana Bozic (Chairperson), Victor Dodonov, Margarita Man'ko, Helmut Rauch, Saverio Pascazio, Richard Tanas and Philip Walther. Sponsors of the awards were the Institute of Physics, Belgrade, European Physical Journal (EPJ) and John Wiley and Sons. CEWQO 2009 and 2010 The 16th Central European Workshop on Quantum Optics was held in Turku, Finland, 23-27 May 2009. CEWQO09 was chaired by Professor Kalle-Antti Suominen (http://www.congress.utu.fi/cewqo2009). The conference site is the new ICT building at chaired by Professor Kalle-Antti Suominen (http://www.congress.utu.fi/cewqo2009, www.congress.utu.fi/cewqo2009). The conference site was the new ICT building at the University of Turku campus area and the Viking Line ferry boat. Turku is the central city of historical Finland established on the mouth of the river Aura in the 13th century. It is the birthplace of Finnish academic life, since the Academy of Turku was established there in 1640. In 2011, Turku will be one of the cultural capitals of Europe. The city has a strong maritime tradition and is shielded from the Baltic sea by a large and beautiful archipelago. The 17th Central European Workshop on Quantum Optics will be held in 2010 in St Andrews, UK. It will be chaired by Professors Ulf Leonhardt and Natalia Korolkova from the School of Physics and Astronomy, University of St Andrews. St Andrews is home to the first university of Scotland, the third-oldest in the English-speaking world, and is the home of golf. It remains a charming, eccentric seaside town that is sufficiently secluded - the ideal place for a stimulating and thought-provoking conference.

Condensed Matter Theories: Volume 25

NASA Astrophysics Data System (ADS)

Ludeña, Eduardo V.; Bishop, Raymond F.; Iza, Peter

2011-03-01

pt. A. Fermi and Bose fluids, exotic systems. Reemergence of the collective mode in [symbol]He and electron layers / H. M. Bohm ... [et al.]. Dissecting and testing collective and topological scenarios for the quantum critical point / J. W. Clark, V. A. Khodel and M. V. Zverev. Helium on nanopatterned surfaces at finite temperature / E. S. Hernandez ... [et al.]. Towards DFT calculations of metal clusters in quantum fluid matrices / S. A. Chin ... [et al.]. Acoustic band gap formation in metamaterials / D. P. Elford ... [et al.]. Dissipative processes in low density strongly interacting 2D electron systems / D. Neilson. Dynamical spatially resolved response function of finite 1-D nano plasmas / T. Raitza, H. Reinholz and G. Ropke. Renormalized bosons and fermions / K. A. Gernoth and M. L. Ristig. Light clusters in nuclear matter / G. Ropke -- pt. B. Quantum magnets, quantum dynamics and phase transitions. Magnetic ordering of antiferromagnets on a spatially anisotropic triangular lattice / R. F. Bishop ... [et al.]. Thermodynamic detection of quantum phase transitions / M. K. G. Kruse ... [et al.]. The SU(2) semi quantum systems dynamics and thermodynamics / C. M. Sarris and A. N. Proto -- pt. C. Physics of nanosystems and nanotechnology. Quasi-one dimensional fluids that exhibit higher dimensional behavior / S. M. Gatica ... [et al.]. Spectral properties of molecular oligomers. A non-Markovian quantum state diffusion approach / J. Roden, W. T. Strunz and A. Eisfeld. Quantum properties in transport through nanoscopic rings: Charge-spin separation and interference effects / K. Hallberg, J. Rincon and S. Ramasesha. Cooperative localization-delocalization in the high T[symbol] cuprates / J. Ranninger. Thermodynamically stable vortex states in superconducting nanowires / W. M. Wu, M. B. Sobnack and F. V. Kusmartsev.pt. D. Quantum information. Quantum information in optical lattices / A. M. Guzman and M. A. Duenas E. -- pt. E. Theory and applications of molecular dynamics and density functional theory. Exchange-correlation functionals from the identical-particle Ornstein-Zernike equation: Basic formulation and numerical algorithms / R. Cuevas-Saavedra and P. W. Ayers. Features and catalytic properties of RhCu: A review / S. Gonzalez, C. Sousa and F. Illas. Kinetic energy functionals: Exact ones from analytic model wave functions and approximate ones in orbital-free molecular dynamics / V. V. Karasiev ... [et al.]. Numerical analysis of hydrogen storage in carbon nanopores / C. Wexler ... [et al.] -- pt. F. Superconductivity. Generalized Bose-Einstein condensation in superconductivity / M. de Llano. Kohn anomaly energy in conventional superconductors equals twice the energy of the superconducting gap: How and why? / R. Chaudhury and M. P. Das. Collective excitations in superconductors and semiconductors in the presence of a condensed phase / Z. Koinov. Thermal expansion of ferromagnetic superconductors: Possible application to UGe[symbol] / N. Hatayama and R. Konno. Generalized superconducting gap in a Boson-Fermion model / T. A. Mamedov and M. de Llano. Influence of domain walls in the superconductor/ferromagnet proximity effect / E. J. Patino. Spin singlet and triplet superconductivity induced by correlated hopping interactions / L. A. Perez, J. S. Millan and C. Wang -- pt. G. Statistical mechanics, relativistic quantum mechanics. Boltzmann's ergodic hypothesis: A meeting place for two cultures / M. H. Lee. Electron-electron interaction in the non-relativistic limit / F. B. Malik.

Relativistic entanglement

NASA Astrophysics Data System (ADS)

Horwitz, Lawrence; Arshansky, Rafael I.

2018-07-01

The relativistic quantum theory of Stueckelberg, Horwitz and Piron (SHP) describes in a simple way the experiment on interference in time of an electron emitted by femtosecond laser pulses carried out by Lindner et al. In this paper, we show that, in a way similar to our study of the Lindner et al. experiment (with some additional discussion of the covariant quantum mechanical description of spin and angular momentum), the experiment proposed by Palacios et al. to demonstrate entanglement of a two electron state, where the electrons are separated in time of emission, has a consistent interpretation in terms of the SHP theory. We find, after a simple calculation, results in essential agreement with those of Palacios et al.; but with the observed times as values of proper quantum observables.

High-speed directly modulated widely tunable two-section InGaAlAs DBR lasers.

PubMed

Zhou, Daibing; Liang, Song; Zhao, Lingjuan; Zhu, Hongliang; Wang, Wei

2017-02-06

We report widely tunable two-section distributed Bragg reflector (DBR) lasers, which have InGaAlAs multiple quantum wells (MQWs) as the gain material. By butt-jointing InGaAsP, which has a photoluminescence wavelength of 1.4 μm as the material of the DBR section, a wavelength tuning range of 12 nm can be obtained by current injection into the DBR section. The direct modulation bandwidth of the lasers is greater than 10 GHz over the entire wavelength tuning range up to 40°C. Compared with InGaAsP DBR lasers having the same structure, the InGaAlAs lasers have smaller variations in both the threshold current and slope efficiency with the temperature because of the better electron confinement in the InGaAlAs MQWs. Moreover, the DBR-current-induced decreases in the modulation bandwidth and side mode suppression ratio (SMSR) of the optical spectra are notably smaller for the InGaAlAs lasers than for the InGaAsP lasers.

He-Ion Microscopy as a High-Resolution Probe for Complex Quantum Heterostructures in Core-Shell Nanowires.

PubMed

Pöpsel, Christian; Becker, Jonathan; Jeon, Nari; Döblinger, Markus; Stettner, Thomas; Gottschalk, Yeanitza Trujillo; Loitsch, Bernhard; Matich, Sonja; Altzschner, Marcus; Holleitner, Alexander W; Finley, Jonathan J; Lauhon, Lincoln J; Koblmüller, Gregor

2018-06-13

Core-shell semiconductor nanowires (NW) with internal quantum heterostructures are amongst the most complex nanostructured materials to be explored for assessing the ultimate capabilities of diverse ultrahigh-resolution imaging techniques. To probe the structure and composition of these materials in their native environment with minimal damage and sample preparation calls for high-resolution electron or ion microscopy methods, which have not yet been tested on such classes of ultrasmall quantum nanostructures. Here, we demonstrate that scanning helium ion microscopy (SHeIM) provides a powerful and straightforward method to map quantum heterostructures embedded in complex III-V semiconductor NWs with unique material contrast at ∼1 nm resolution. By probing the cross sections of GaAs-Al(Ga)As core-shell NWs with coaxial GaAs quantum wells as well as short-period GaAs/AlAs superlattice (SL) structures in the shell, the Al-rich and Ga-rich layers are accurately discriminated by their image contrast in excellent agreement with correlated, yet destructive, scanning transmission electron microscopy and atom probe tomography analysis. Most interestingly, quantitative He-ion dose-dependent SHeIM analysis of the ternary AlGaAs shell layers and of compositionally nonuniform GaAs/AlAs SLs reveals distinct alloy composition fluctuations in the form of Al-rich clusters with size distributions between ∼1-10 nm. In the GaAs/AlAs SLs the alloy clustering vanishes with increasing SL-period (>5 nm-GaAs/4 nm-AlAs), providing insights into critical size dimensions for atomic intermixing effects in short-period SLs within a NW geometry. The straightforward SHeIM technique therefore provides unique benefits in imaging the tiniest nanoscale features in topography, structure and composition of a multitude of diverse complex semiconductor nanostructures.

LOCC indistinguishable orthogonal product quantum states

NASA Astrophysics Data System (ADS)

Zhang, Xiaoqian; Tan, Xiaoqing; Weng, Jian; Li, Yongjun

2016-07-01

We construct two families of orthogonal product quantum states that cannot be exactly distinguished by local operation and classical communication (LOCC) in the quantum system of 2k+i ⊗ 2l+j (i, j ∈ {0, 1} and i ≥ j ) and 3k+i ⊗ 3l+j (i, j ∈ {0, 1, 2}). And we also give the tiling structure of these two families of quantum product states where the quantum states are unextendible in the first family but are extendible in the second family. Our construction in the quantum system of 3k+i ⊗ 3l+j is more generalized than the other construction such as Wang et al.’s construction and Zhang et al.’s construction, because it contains the quantum system of not only 2k ⊗ 2l and 2k+1 ⊗ 2l but also 2k ⊗ 2l+1 and 2k+1 ⊗ 2l+1. We calculate the non-commutativity to quantify the quantumness of a quantum ensemble for judging the local indistinguishability. We give a general method to judge the indistinguishability of orthogonal product states for our two constructions in this paper. We also extend the dimension of the quantum system of 2k ⊗ 2l in Wang et al.’s paper. Our work is a necessary complement to understand the phenomenon of quantum nonlocality without entanglement.

Quantum internet using code division multiple access

PubMed Central

Zhang, Jing; Liu, Yu-xi; Özdemir, Şahin Kaya; Wu, Re-Bing; Gao, Feifei; Wang, Xiang-Bin; Yang, Lan; Nori, Franco

2013-01-01

A crucial open problem inS large-scale quantum networks is how to efficiently transmit quantum data among many pairs of users via a common data-transmission medium. We propose a solution by developing a quantum code division multiple access (q-CDMA) approach in which quantum information is chaotically encoded to spread its spectral content, and then decoded via chaos synchronization to separate different sender-receiver pairs. In comparison to other existing approaches, such as frequency division multiple access (FDMA), the proposed q-CDMA can greatly increase the information rates per channel used, especially for very noisy quantum channels. PMID:23860488

Suppression of low-frequency charge noise in gates-defined GaAs quantum dots

DOE Office of Scientific and Technical Information (OSTI.GOV)

You, Jie; Li, Hai-Ou, E-mail: haiouli@ustc.edu.cn, E-mail: gpguo@ustc.edu.cn; Wang, Ke

To reduce the charge noise of a modulation-doped GaAs/AlGaAs quantum dot, we have fabricated shallow-etched GaAs/AlGaAs quantum dots using the wet-etching method to study the effects of two-dimensional electron gas (2DEG) underneath the metallic gates. The low-frequency 1/f noise in the Coulomb blockade region of the shallow-etched quantum dot is compared with a non-etched quantum dot on the same wafer. The average values of the gate noise are approximately 0.5 μeV in the shallow-etched quantum dot and 3 μeV in the regular quantum dot. Our results show the quantum dot low-frequency charge noise can be suppressed by the removal ofmore » the 2DEG underneath the metallic gates, which provides an architecture for noise reduction.« less

Transport Measurements on Si Nanostructures with Counted Sb Donors

NASA Astrophysics Data System (ADS)

Singh, Meenakshi; Bielejec, Edward; Garratt, Elias; Ten Eyck, Gregory; Bishop, Nathaniel; Wendt, Joel; Luhman, Dwight; Carroll, Malcolm; Lilly, Michael

2014-03-01

Donor based spin qubits are a promising platform for quantum computing. Single qubits using timed implant of donors have been demonstrated.1 Extending this to multiple qubits requires precise control over the placement and number of donors. Such control can be achieved by using a combination of low-energy heavy-ion implants (to reduce depth straggle), electron-beam lithography (to define position), focused ion beam (to localize implants to one lithographic site) and counting the number of implants with a single ion detector.2 We report transport measurements on MOS quantum dots implanted with 5, 10 and 20 Sb donors using the approach described above. A donor charge transition is identified by a charge offset in the transport characteristics. Correlation between the number of donors and the charge offsets is studied. These results are necessary first steps towards fabricating donor nanostructures for two qubit interactions. This work was performed, in part, at the Center for Integrated Nanotechnologies, a U.S. DOE Office of Basic Energy Sciences user facility. The work was supported by Sandia National Laboratories Directed Research and Development Program. Sandia National Laboratories is a multi-program laboratory operated by Sandia Corporation, a Lockheed-Martin Company, for the U. S. Department of Energy under Contract No. DE-AC04-94AL85000. 1J. J. Pla et al., Nature 496, 334 (2013) 2J. A. Seamons et al., APL 93, 043124 (2008).

Localized surface plasmon enhanced deep UV-emitting of AlGaN based multi-quantum wells by Al nanoparticles on SiO2 dielectric interlayer

NASA Astrophysics Data System (ADS)

He, Ju; Wang, Shuai; Chen, Jingwen; Wu, Feng; Dai, Jiangnan; Long, Hanling; Zhang, Yi; Zhang, Wei; Feng, Zhe Chuan; Zhang, Jun; Du, Shida; Ye, Lei; Chen, Changqing

2018-05-01

In this paper, we report a 2.6-fold deep ultraviolet emission enhancement of integrated photoluminescence (PL) intensity in AlGaN-based multi-quantum wells (MQWs) by introducing the coupling of local surface plasmons from Al nanoparticles (NPs) on a SiO2 dielectric interlayer with excitons and photons in MQWs at room temperature. In comparison to bare AlGaN MQWs, a significant 2.3-fold enhancement of the internal quantum efficiency, from 16% to 37%, as well as a 13% enhancement of photon extraction efficiency have been observed in the MQWs decorated with Al NPs on SiO2 dielectric interlayer. Polarization-dependent PL measurement showed that both the transverse electric and transverse magnetic mode were stronger than the original intensity in bare AlGaN MQWs, indicating a strong LSPs coupling process and vigorous scattering ability of the Al/SiO2 composite structure. These results were confirmed by the activation energy of non-radiative recombination from temperature-dependent PL measurement and the theoretical three dimensional finite difference time domain calculations.

Localized surface plasmon enhanced deep UV-emitting of AlGaN based multi-quantum wells by Al nanoparticles on SiO2 dielectric interlayer.

PubMed

He, Ju; Wang, Shuai; Chen, Jingwen; Wu, Feng; Dai, Jiangnan; Long, Hanling; Zhang, Yi; Zhang, Wei; Feng, Zhe Chuan; Zhang, Jun; Du, Shida; Ye, Lei; Chen, Changqing

2018-05-11

In this paper, we report a 2.6-fold deep ultraviolet emission enhancement of integrated photoluminescence (PL) intensity in AlGaN-based multi-quantum wells (MQWs) by introducing the coupling of local surface plasmons from Al nanoparticles (NPs) on a SiO 2 dielectric interlayer with excitons and photons in MQWs at room temperature. In comparison to bare AlGaN MQWs, a significant 2.3-fold enhancement of the internal quantum efficiency, from 16% to 37%, as well as a 13% enhancement of photon extraction efficiency have been observed in the MQWs decorated with Al NPs on SiO 2 dielectric interlayer. Polarization-dependent PL measurement showed that both the transverse electric and transverse magnetic mode were stronger than the original intensity in bare AlGaN MQWs, indicating a strong LSPs coupling process and vigorous scattering ability of the Al/SiO 2 composite structure. These results were confirmed by the activation energy of non-radiative recombination from temperature-dependent PL measurement and the theoretical three dimensional finite difference time domain calculations.

Quantum Bio-Informatics IV

NASA Astrophysics Data System (ADS)

Accardi, Luigi; Freudenberg, Wolfgang; Ohya, Masanori

2011-01-01

The QP-DYN algorithms / L. Accardi, M. Regoli and M. Ohya -- Study of transcriptional regulatory network based on Cis module database / S. Akasaka ... [et al.] -- On Lie group-Lie algebra correspondences of unitary groups in finite von Neumann algebras / H. Ando, I. Ojima and Y. Matsuzawa -- On a general form of time operators of a Hamiltonian with purely discrete spectrum / A. Arai -- Quantum uncertainty and decision-making in game theory / M. Asano ... [et al.] -- New types of quantum entropies and additive information capacities / V. P. Belavkin -- Non-Markovian dynamics of quantum systems / D. Chruscinski and A. Kossakowski -- Self-collapses of quantum systems and brain activities / K.-H. Fichtner ... [et al.] -- Statistical analysis of random number generators / L. Accardi and M. Gabler -- Entangled effects of two consecutive pairs in residues and its use in alignment / T. Ham, K. Sato and M. Ohya -- The passage from digital to analogue in white noise analysis and applications / T. Hida -- Remarks on the degree of entanglement / D. Chruscinski ... [et al.] -- A completely discrete particle model derived from a stochastic partial differential equation by point systems / K.-H. Fichtner, K. Inoue and M. Ohya -- On quantum algorithm for exptime problem / S. Iriyama and M. Ohya -- On sufficient algebraic conditions for identification of quantum states / A. Jamiolkowski -- Concurrence and its estimations by entanglement witnesses / J. Jurkowski -- Classical wave model of quantum-like processing in brain / A. Khrennikov -- Entanglement mapping vs. quantum conditional probability operator / D. Chruscinski ... [et al.] -- Constructing multipartite entanglement witnesses / M. Michalski -- On Kadison-Schwarz property of quantum quadratic operators on M[symbol](C) / F. Mukhamedov and A. Abduganiev -- On phase transitions in quantum Markov chains on Cayley Tree / L. Accardi, F. Mukhamedov and M. Saburov -- Space(-time) emergence as symmetry breaking effect / I. Ojima.Use of cryptographic ideas to interpret biological phenomena (and vice versa) / M. Regoli -- Discrete approximation to operators in white noise analysis / Si Si -- Bogoliubov type equations via infinite-dimensional equations for measures / V. V. Kozlov and O. G. Smolyanov -- Analysis of several categorical data using measure of proportional reduction in variation / K. Yamamoto ... [et al.] -- The electron reservoir hypothesis for two-dimensional electron systems / K. Yamada ... [et al.] -- On the correspondence between Newtonian and functional mechanics / E. V. Piskovskiy and I. V. Volovich -- Quantile-quantile plots: An approach for the inter-species comparison of promoter architecture in eukaryotes / K. Feldmeier ... [et al.] -- Entropy type complexities in quantum dynamical processes / N. Watanabe -- A fair sampling test for Ekert protocol / G. Adenier, A. Yu. Khrennikov and N. Watanabe -- Brownian dynamics simulation of macromolecule diffusion in a protocell / T. Ando and J. Skolnick -- Signaling network of environmental sensing and adaptation in plants: Key roles of calcium ion / K. Kuchitsu and T. Kurusu -- NetzCope: A tool for displaying and analyzing complex networks / M. J. Barber, L. Streit and O. Strogan -- Study of HIV-1 evolution by coding theory and entropic chaos degree / K. Sato -- The prediction of botulinum toxin structure based on in silico and in vitro analysis / T. Suzuki and S. Miyazaki -- On the mechanism of D-wave high T[symbol] superconductivity by the interplay of Jahn-Teller physics and Mott physics / H. Ushio, S. Matsuno and H. Kamimura.

Toward quantum superposition of living organisms

NASA Astrophysics Data System (ADS)

Romero-Isart, Oriol; Juan, Mathieu L.; Quidant, Romain; Cirac, J. Ignacio

2010-03-01

The most striking feature of quantum mechanics is the existence of superposition states, where an object appears to be in different situations at the same time. The existence of such states has been previously tested with small objects, such as atoms, ions, electrons and photons (Zoller et al 2005 Eur. Phys. J. D 36 203-28), and even with molecules (Arndt et al 1999 Nature 401 680-2). More recently, it has been shown that it is possible to create superpositions of collections of photons (Deléglise et al 2008 Nature 455 510-14), atoms (Hammerer et al 2008 arXiv:0807.3358) or Cooper pairs (Friedman et al 2000 Nature 406 43-6). Very recent progress in optomechanical systems may soon allow us to create superpositions of even larger objects, such as micro-sized mirrors or cantilevers (Marshall et al 2003 Phys. Rev. Lett. 91 130401; Kippenberg and Vahala 2008 Science 321 1172-6 Marquardt and Girvin 2009 Physics 2 40; Favero and Karrai 2009 Nature Photon. 3 201-5), and thus to test quantum mechanical phenomena at larger scales. Here we propose a method to cool down and create quantum superpositions of the motion of sub-wavelength, arbitrarily shaped dielectric objects trapped inside a high-finesse cavity at a very low pressure. Our method is ideally suited for the smallest living organisms, such as viruses, which survive under low-vacuum pressures (Rothschild and Mancinelli 2001 Nature 406 1092-101) and optically behave as dielectric objects (Ashkin and Dziedzic 1987 Science 235 1517-20). This opens up the possibility of testing the quantum nature of living organisms by creating quantum superposition states in very much the same spirit as the original Schrödinger's cat 'gedanken' paradigm (Schrödinger 1935 Naturwissenschaften 23 807-12, 823-8, 844-9). We anticipate that our paper will be a starting point for experimentally addressing fundamental questions, such as the role of life and consciousness in quantum mechanics.

Spins and photons: connecting quantum registers in diamond

NASA Astrophysics Data System (ADS)

Childress, Lily

2012-06-01

Long-lived electronic and nuclear spin states have made the nitrogen-vacancy (NV) defect in diamond a leading candidate for quantum information processing in the solid state. Multi-qubit quantum registers formed by single defects and nearby nuclear spins can currently be controlled and detected with high fidelity. Nevertheless, development of coherent connections between distant NVs remains an outstanding challenge. One advantage to working with solid-state defects is the opportunity to integrate them with microfabricated mechanical, electronic, or optical devices; in principle, such devices could mediate interactions between registers, turning them into nodes within a larger quantum network. In the last few months, several experiments have made key steps toward realizing a coherent quantum interface between individual NV centers using a mechanical quantum bus [1] or optical channels [2,3]. This talk will explore the current state of the art, and report on recent observation of two photon quantum interference between different gate-tunable defect centers [2]. These results pave the way towards measurement-based entanglement between remote NV centers and the realization of quantum networks with solid-state spins.[4pt] [1] Kolkowitz et al., Science 335, 1603 (2012)[2] Bernien et al., Phys. Rev. Lett. 108, 043604 (2012)[3] Sipahigil et al., http://lanl.arxiv.org/abs/1112.3975

High power ultraviolet light emitting diodes based on GaN /AlGaN quantum wells produced by molecular beam epitaxy

NASA Astrophysics Data System (ADS)

Cabalu, J. S.; Bhattacharyya, A.; Thomidis, C.; Friel, I.; Moustakas, T. D.; Collins, C. J.; Komninou, Ph.

2006-11-01

In this paper, we report on the growth by molecular beam epitaxy and fabrication of high power nitride-based ultraviolet light emitting diodes emitting in the spectral range between 340 and 350nm. The devices were grown on (0001) sapphire substrates via plasma-assisted molecular beam epitaxy. The growth of the light emitting diode (LED) structures was preceded by detailed materials studies of the bottom n-AlGaN contact layer, as well as the GaN /AlGaN multiple quantum well (MQW) active region. Specifically, kinetic conditions were identified for the growth of the thick n-AlGaN films to be both smooth and to have fewer defects at the surface. Transmission-electron microscopy studies on identical GaN /AlGaN MQWs showed good quality and well-defined interfaces between wells and barriers. Large area mesa devices (800×800μm2) were fabricated and were designed for backside light extraction. The LEDs were flip-chip bonded onto a Si submount for better heat sinking. For devices emitting at 340nm, the measured differential on-series resistance is 3Ω with electroluminescence spectrum full width at half maximum of 18nm. The output power under dc bias saturates at 0.5mW, while under pulsed operation it saturates at approximately 700mA to a value of 3mW, suggesting that thermal heating limits the efficiency of these devices. The output power of the investigated devices was found to be equivalent with those produced by the metal-organic chemical vapor deposition and hydride vapor-phase epitaxy methods. The devices emitting at 350nm were investigated under dc operation and the output power saturates at 4.5mW under 200mA drive current.

Periodicities in solar wind-magnetosphere coupling functions and geomagnetic activity during the past solar cycles

NASA Astrophysics Data System (ADS)

Andriyas, T.; Andriyas, S.

2017-09-01

In this paper, we study the solar-terrestrial relation through the wavelet analysis. We report periodicities common between multiple solar wind coupling functions and geomagnetic indices during five solar cycles and also and the strength of this correspondence. The Dst (found to be most predictable in Newell et al., J. Geophys. Res. Space Phys. 112(A1):A01206, 2007) and AL (least predictable in Newell et al., J. Geophys. Res. Space Phys. 112(A1):A01206, 2007) indices are used for this purpose. During the years 1966-2016 (which includes five solar cycles 20, 21, 22, 23, and 24), prominent periodicities ≤720 days with power above 95% confidence level were found to occur around 27, 182, 385, and 648 days in the Dst index while those in the AL index were found in bands around 27, 187, and 472 days. Ten solar wind coupling functions were then used to find periodicities common with the indices. All the coupling functions had significant power in bands centered around 27, 280, and 648 days while powers in fluctuations around 182, 385, and 472 days were only found in some coupling functions. All the drivers and their variants had power above the significant level in the 280-288 days band, which was absent in the Dst and AL indices. The normalized scale averaged spectral power around the common periods in the coupling functions and the indices indicated that the coupling functions most correlated with the Dst index were the Newell (27 and 385 days), Wygant (182 days), and Scurry-Russell and Boynton (648 days) functions. An absence of common power between the coupling functions and the Dst index around the annual periodicity was noted during the even solar cycles. A similar analysis for the AL index indicated that Newell (27 days), Rectified (187 days), and Boynton (472 days) were the most correlated functions. It was also found that the correlation numbers were relatively weaker for the AL index, specially for the 187 day periodicity. It is concluded that as the two indices respond to solar wind forcing with varying levels of strength at various prominent scales and the coupling function used, the response might be dependent on the scale (days or months or years) of interest at which the solar wind driving is to be predicted.

Binding energy of excitons formed from spatially separated electrons and holes in insulating quantum dots

DOE Office of Scientific and Technical Information (OSTI.GOV)

Pokutnyi, S. I., E-mail: pokutnyi-sergey@inbox.ru; Kulchin, Yu. N.; Dzyuba, V. P.

It is found that the binding energy of the ground state of an exciton formed from an electron and a hole spatially separated from each other (the hole is moving within a quantum dot, and the electron is localized above the spherical (quantum dot)–(insulating matrix) interface) in a nanosystem containing insulating Al{sub 2}O{sub 3} quantum dots is substantially increased (by nearly two orders of magnitude) compared to the exciton binding energy in an Al{sub 2}O{sub 3} single crystal. It is established that, in the band gap of an Al{sub 2}O{sub 3} nanoparticle, a band of exciton states (formed from spatiallymore » separated electrons and holes) appears. It is shown that there exists the possibility of experimentally detecting the ground and excited exciton states in the band gap of Al{sub 2}O{sub 3} nanoparticles at room temperature from the absorption spectrum of the nanosystem.« less

Single atom array to form a Rydberg ring

NASA Astrophysics Data System (ADS)

Zhan, Mingsheng; Xu, Peng; He, Xiaodong; Liu, Min; Wang, Jin

2012-02-01

Single atom arrays are ideal quantum systems for studying few-body quantum simulation and quantum computation [1]. Towards realizing a fully controllable array we did a lot of experimental efforts, which include rotating single atoms in a ring optical lattice generated by a spatial light modulator [2], high efficient loading of two atoms into a microscopic optical trap by dynamically reshaping the trap with a spatial light modulator [3], and trapping a single atom in a blue detuned optical bottle beam trap [4]. Recently, we succeeded in trapping up to 6 atoms in a ring optical lattice with one atom in each site. Further laser cooling the array and manipulation of the inner states will provide chance to form Ryberg rings for quantum simulation. [4pt] [1] M. Saffman et al., Rev. Mod. Phys. 82, 2313 (2010)[0pt] [2] X.D. He et al., Opt. Express 17, 21014 (2009)[0pt] [3] X.D. He et al., Opt. Express 18, 13586 (2010)[0pt] [4] P. Xu et al., Opt. Lett. 35, 2164 (2010)

Practical scheme to share a secret key through a quantum channel with a 27.6% bit error rate

NASA Astrophysics Data System (ADS)

Chau, H. F.

2002-12-01

A secret key shared through quantum key distribution between two cooperative players is secure against any eavesdropping attack allowed by the laws of physics. Yet, such a key can be established only when the quantum channel error rate due to eavesdropping or imperfect apparatus is low. Here, a practical quantum key distribution scheme by making use of an adaptive privacy amplification procedure with two-way classical communication is reported. Then, it is proven that the scheme generates a secret key whenever the bit error rate of the quantum channel is less than 0.5-0.1(5)≈27.6%, thereby making it the most error resistant scheme known to date.

Quantum-correlation breaking channels, quantum conditional probability and Perron-Frobenius theory

NASA Astrophysics Data System (ADS)

Chruściński, Dariusz

2013-03-01

Using the quantum analog of conditional probability and classical Bayes theorem we discuss some aspects of particular entanglement breaking channels: quantum-classical and classical-classical channels. Applying the quantum analog of Perron-Frobenius theorem we generalize the recent result of Korbicz et al. (2012) [8] on full and spectrum broadcasting from quantum-classical channels to arbitrary quantum channels.

Secure Multiparty Quantum Computation for Summation and Multiplication.

PubMed

Shi, Run-hua; Mu, Yi; Zhong, Hong; Cui, Jie; Zhang, Shun

2016-01-21

As a fundamental primitive, Secure Multiparty Summation and Multiplication can be used to build complex secure protocols for other multiparty computations, specially, numerical computations. However, there is still lack of systematical and efficient quantum methods to compute Secure Multiparty Summation and Multiplication. In this paper, we present a novel and efficient quantum approach to securely compute the summation and multiplication of multiparty private inputs, respectively. Compared to classical solutions, our proposed approach can ensure the unconditional security and the perfect privacy protection based on the physical principle of quantum mechanics.

Secure Multiparty Quantum Computation for Summation and Multiplication

PubMed Central

Shi, Run-hua; Mu, Yi; Zhong, Hong; Cui, Jie; Zhang, Shun

2016-01-01

As a fundamental primitive, Secure Multiparty Summation and Multiplication can be used to build complex secure protocols for other multiparty computations, specially, numerical computations. However, there is still lack of systematical and efficient quantum methods to compute Secure Multiparty Summation and Multiplication. In this paper, we present a novel and efficient quantum approach to securely compute the summation and multiplication of multiparty private inputs, respectively. Compared to classical solutions, our proposed approach can ensure the unconditional security and the perfect privacy protection based on the physical principle of quantum mechanics. PMID:26792197

Short-wavelength InAlGaAs/AlGaAs quantum dot superluminescent diodes

NASA Astrophysics Data System (ADS)

Liang, De-Chun; An, Qi; Jin, Peng; Li, Xin-Kun; Wei, Heng; Wu, Ju; Wang, Zhan-Guo

2011-10-01

This paper reports the fabrication of J-shaped bent-waveguide superluminescent diodes utilizing an InAlGaAs/AlGaAs quantum dot active region. The emission spectrum of the device is centred at 884 nm with a full width at half maximum of 37 nm and an output power of 18 mW. By incorporating an Al composition into the quantum dot active region, short-wavelength superluminescent diode devices can be obtained. An intersection was found for the light power-injection current curves measured from the straight-waveguide facet and the bent-waveguide facet, respectively. The result is attributed to the conjunct effects of the gain and the additional loss of the bent waveguide. A numerical simulation is performed to verify the qualitative explanation. It is shown that bent waveguide loss is an important factor that affects the output power of J-shaped superluminescent diode devices.

An Improved Protocol for Controlled Deterministic Secure Quantum Communication Using Five-Qubit Entangled State

NASA Astrophysics Data System (ADS)

Kao, Shih-Hung; Lin, Jason; Tsai, Chia-Wei; Hwang, Tzonelih

2018-03-01

In early 2009, Xiu et al. (Opt. Commun. 282(2) 333-337 2009) presented a controlled deterministic secure quantum communication (CDSQC) protocol via a newly constructed five-qubit entangled quantum state. Later, Qin et al. (Opt. Commun. 282(13), 2656-2658 2009) pointed out two security loopholes in Xiu et al.'s protocol: (1) A correlation-elicitation (CE) attack can reveal the entire secret message; (2) A leakage of partial information for the receiver is noticed. Then, Xiu et al. (Opt. Commun. 283(2), 344-347 2010) presented a revised CDSQC protocol to remedy the CE attack problem. However, the information leakage problem still remains open. This work proposes a new CDSQC protocol using the same five-qubit entangled state which can work without the above mentioned security problems. Moreover, the Trojan Horse attacks can be automatically avoided without using detecting devices in the new CDSQC.

An Improved Protocol for Controlled Deterministic Secure Quantum Communication Using Five-Qubit Entangled State

NASA Astrophysics Data System (ADS)

Kao, Shih-Hung; Lin, Jason; Tsai, Chia-Wei; Hwang, Tzonelih

2018-06-01

In early 2009, Xiu et al. (Opt. Commun. 282(2) 333-337 2009) presented a controlled deterministic secure quantum communication (CDSQC) protocol via a newly constructed five-qubit entangled quantum state. Later, Qin et al. (Opt. Commun. 282(13), 2656-2658 2009) pointed out two security loopholes in Xiu et al.'s protocol: (1) A correlation-elicitation (CE) attack can reveal the entire secret message; (2) A leakage of partial information for the receiver is noticed. Then, Xiu et al. (Opt. Commun. 283(2), 344-347 2010) presented a revised CDSQC protocol to remedy the CE attack problem. However, the information leakage problem still remains open. This work proposes a new CDSQC protocol using the same five-qubit entangled state which can work without the above mentioned security problems. Moreover, the Trojan Horse attacks can be automatically avoided without using detecting devices in the new CDSQC.

Singular Valence Fluctuations at a Kondo Destroyed Quantum Critical Point

NASA Astrophysics Data System (ADS)

Pixley, Jedediah; Kirchner, Stefan; Ingersent, Kevin; Si, Qimiao

2012-02-01

Recent experiments on the heavy fermion superconductor beta-YbAlB4 have indicated that this compound satisfies quantum critical scaling [1]. Motivated by the observation of mixed valency in this material [2], we study the Kondo destruction physics in the mixed-valence regime [3] of a particle-hole asymmetric Anderson impurity model with a pseudogapped density of states. In the vicinity of the quantum critical point we determine the finite temperature spin and charge susceptibilities by utilizing a continuous time quantum Monte Carlo method [4] and the numerical renormalization group. We show that this mixed-valence quantum critical point displays a Kondo breakdown effect. Furthermore, we find that both dynamic spin and charge susceptibilities obey frequency over temperature scaling, and that the static charge susceptibility diverges with a universal exponent. Possible implications of our results for beta-YbAlB4 are discussed. [1] Matsumoto et al, Science 331, 316 (2011). [2] Okawaet al, Physical Review Letters 104, 247201 (2010). [3] J. H. Pixley, S. Kirchner, Kevin Ingersent and Q. Si, arXiv:1108.5227v1 (2011). [4] M. Glossop, S. Kirchner, J. H. Pixley and Q. Si, Phys. Rev. Lett. 107, 076404 (2011).

A Meinardus Theorem with Multiple Singularities

NASA Astrophysics Data System (ADS)

Granovsky, Boris L.; Stark, Dudley

2012-09-01

Meinardus proved a general theorem about the asymptotics of the number of weighted partitions, when the Dirichlet generating function for weights has a single pole on the positive real axis. Continuing (Granovsky et al., Adv. Appl. Math. 41:307-328, 2008), we derive asymptotics for the numbers of three basic types of decomposable combinatorial structures (or, equivalently, ideal gas models in statistical mechanics) of size n, when their Dirichlet generating functions have multiple simple poles on the positive real axis. Examples to which our theorem applies include ones related to vector partitions and quantum field theory. Our asymptotic formula for the number of weighted partitions disproves the belief accepted in the physics literature that the main term in the asymptotics is determined by the rightmost pole.

Direct observation of a Γ -X energy spectrum transition in narrow AlAs quantum wells

NASA Astrophysics Data System (ADS)

Khisameeva, A. R.; Shchepetilnikov, A. V.; Muravev, V. M.; Gubarev, S. I.; Frolov, D. D.; Nefyodov, Yu. A.; Kukushkin, I. V.; Reichl, C.; Tiemann, L.; Dietsche, W.; Wegscheider, W.

2018-03-01

Spectra of magnetoplasma excitations have been investigated in two-dimensional electron systems in AlAs quantum wells (QWs) of different widths. The magnetoplasma spectrum has been found to change profoundly when the quantum well width becomes thinner than 5.5 nm, indicating a drastic change in the conduction electron energy spectrum. The transformation can be interpreted in terms of transition from the in-plane strongly anisotropic Xx-Xy valley occupation to the out-of-plane isotropic Xz valley in the QW plane. Strong enhancement of the cyclotron effective mass over the band value in narrow AlAs QWs is reported.

Experimental realization of entanglement in multiple degrees of freedom between two quantum memories.

PubMed

Zhang, Wei; Ding, Dong-Sheng; Dong, Ming-Xin; Shi, Shuai; Wang, Kai; Liu, Shi-Long; Li, Yan; Zhou, Zhi-Yuan; Shi, Bao-Sen; Guo, Guang-Can

2016-11-14

Entanglement in multiple degrees of freedom has many benefits over entanglement in a single one. The former enables quantum communication with higher channel capacity and more efficient quantum information processing and is compatible with diverse quantum networks. Establishing multi-degree-of-freedom entangled memories is not only vital for high-capacity quantum communication and computing, but also promising for enhanced violations of nonlocality in quantum systems. However, there have been yet no reports of the experimental realization of multi-degree-of-freedom entangled memories. Here we experimentally established hyper- and hybrid entanglement in multiple degrees of freedom, including path (K-vector) and orbital angular momentum, between two separated atomic ensembles by using quantum storage. The results are promising for achieving quantum communication and computing with many degrees of freedom.

Superlattice photoelectrodes for photoelectrochemical cells

DOEpatents

Nozik, Arthur J.

1987-01-01

A superlattice or multiple-quantum-well semiconductor is used as a photoelectrode in a photoelectrochemical process for converting solar energy into useful fuels or chemicals. The quantum minibands of the superlattice or multiple-quantum-well semiconductor effectively capture hot-charge carriers at or near their discrete quantum energies and deliver them to drive a chemical reaction in an electrolyte. The hot-charge carries can be injected into the electrolyte at or near the various discrete multiple energy levels quantum minibands, or they can be equilibrated among themselves to a hot-carrier pool and then injected into the electrolyte at one average energy that is higher than the lowest quantum band gap in the semiconductor.

AlGaN-based deep ultraviolet light-emitting diodes grown on nano-patterned sapphire substrates with significant improvement in internal quantum efficiency

NASA Astrophysics Data System (ADS)

Dong, Peng; Yan, Jianchang; Zhang, Yun; Wang, Junxi; Zeng, Jianping; Geng, Chong; Cong, Peipei; Sun, Lili; Wei, Tongbo; Zhao, Lixia; Yan, Qingfeng; He, Chenguang; Qin, Zhixin; Li, Jinmin

2014-06-01

We report high-performance AlGaN-based deep ultraviolet light-emitting diodes grown on nano-patterned sapphire substrates (NPSS) using metal-organic chemical vapor deposition. By nanoscale epitaxial lateral overgrowth on NPSS, 4-μm AlN buffer layer has shown strain relaxation and a coalescence thickness of only 2.5 μm. The full widths at half-maximum of X-ray diffraction (002) and (102) ω-scan rocking curves of AlN on NPSS are only 69.4 and 319.1 arcsec. The threading dislocation density in AlGaN-based multi-quantum wells, which are grown on this AlN/NPSS template with a light-emitting wavelength at 283 nm at room temperature, is reduced by 33% compared with that on flat sapphire substrate indicated by atomic force microscopy measurements, and the internal quantum efficiency increases from 30% to 43% revealed by temperature-dependent photoluminescent measurement.

Controlling the optical bistability in a multi-level atomic system via similar parameters of quantum well nanostructure

DOE Office of Scientific and Technical Information (OSTI.GOV)

Jafarzadeh, H., E-mail: h-jafarzadeh56@yahoo.com

2015-04-28

The spontaneously generated coherence (SGC) effects on optical bistability (OB) are investigated in a five-level K-type system. It is found that SGC makes the system phase dependent. Thus, the OB and the absorption behavior of the system can be controlled by the relation phase of applied fields. In addition, the pump field intensity effect on the OB behavior is discussed. The experimental viability of the model in semiconductor quantum well system is also discussed [A. V. Germanenko et al., J. Phys.: Conf. Ser. 376, 012024 (2012); D. S. Chemla et al., IEEE J. Quantum Electron. 20(3), 265 (1984); L. V.more » Butov et al., J. Exp. Theor. Phys. 88(5), 1036 (1999); J. F. Dynes et al., Phys. Rev. Lett. 94, 157403 (2005); S. Schmitt-Rinka et al., Adv. Phys. 38(2), 89 (1989); and H. W. Liu et al., Appl. Phys. Lett. 54, 2082 (1989)].« less

Emission mechanisms in Al-rich AlGaN/AlN quantum wells assessed by excitation power dependent photoluminescence spectroscopy

DOE Office of Scientific and Technical Information (OSTI.GOV)

Iwata, Yoshiya; Banal, Ryan G.; Ichikawa, Shuhei

2015-02-21

The optical properties of Al-rich AlGaN/AlN quantum wells are assessed by excitation-power-dependent time-integrated (TI) and time-resolved (TR) photoluminescence (PL) measurements. Two excitation sources, an optical parametric oscillator and the 4th harmonics of a Ti:sapphire laser, realize a wide range of excited carrier densities between 10{sup 12} and 10{sup 21 }cm{sup −3}. The emission mechanisms change from an exciton to an electron-hole plasma as the excitation power increases. Accordingly, the PL decay time is drastically reduced, and the integrated PL intensities increase in the following order: linearly, super-linearly, linearly again, and sub-linearly. The observed results are well accounted for by rate equationsmore » that consider the saturation effect of non-radiative recombination processes. Using both TIPL and TRPL measurements allows the density of non-radiative recombination centers, the internal quantum efficiency, and the radiative recombination coefficient to be reliably extracted.« less

Exceeding Conventional Photovoltaic Efficiency Limits Using Colloidal Quantum Dots

NASA Astrophysics Data System (ADS)

Pach, Gregory F.

Colloidal quantum dots (QDs) are a widely investigated field of research due to their highly tunable nature in which the optical and electronic properties of the nanocrystal can be manipulated by merely changing the nanocrystal's size. Specifically, colloidal quantum dot solar cells (QDSCs) have become a promising candidate for future generation photovoltaic technology. Quantum dots exhibit multiple exciton generation (MEG) in which multiple electron-hole pairs are generated from a single high-energy photon. This process is not observed in bulk-like semiconductors and allows for QDSCs to achieve theoretical efficiency limits above the standard single-junction Shockley-Queisser limit. However, the fast expanding field of QDSC research has lacked standardization of synthetic techniques and device design. Therefore, we sought to detail methodology for synthesizing PbS and PbSe QDs as well as photovoltaic device fabrication techniques as a fast track toward constructing high-performance solar cells. We show that these protocols lead toward consistently achieving efficiencies above 8% for PbS QDSCs. Using the same methodology for building single-junction photovoltaic devices, we incorporated PbS QDs as a bottom cell into a monolithic tandem architecture along with solution-processed CdTe nanocrystals. Modeling shows that near-peak tandem device efficiencies can be achieved across a wide range of bottom cell band gaps, and therefore the highly tunable band gap of lead-chalcogenide QDs lends well towards a bottom cell in a tandem architecture. A fully functioning monolithic tandem device is realized through the development of a ZnTe/ZnO recombination layer that appropriately combines the two subcells in series. Multiple recent reports have shown nanocrystalline heterostructures to undergo the MEG process more efficiency than several other nanostrucutres, namely lead-chalcogenide QDs. The final section of my thesis expands upon a recent publication by Zhang et. al., which details the synthesis of PbS/CdS heterostructures in which the PbS and CdS domains exist on opposite sides of the nanocrystal and are termed "Janus particles". Transient absorption spectroscopy shows MEG quantum yields above unity very the thermodynamic limit of 2Eg for PbS/CdS Janus particles. We further explain a mechanism for enhanced MEG using photoluminescence studies.

Co-existence of a few and sub micron inhomogeneities in Al-rich AlGaN/AlN quantum wells

DOE Office of Scientific and Technical Information (OSTI.GOV)

Iwata, Yoshiya; Oto, Takao; Banal, Ryan G.

2015-03-21

Inhomogeneity in Al-rich AlGaN/AlN quantum wells is directly observed using our custom-built confocal microscopy photoluminescence (μ-PL) apparatus with a reflective system. The μ-PL system can reach the AlN bandgap in the deep ultra-violet spectral range with a spatial resolution of 1.8 μm. In addition, cathodoluminescence (CL) measurements with a higher spatial resolution of about 100 nm are performed. A comparison of the μ-PL and CL measurements reveals that inhomogeneities, which have different spatial distributions of a few- and sub-micron scales that are superimposed, play key roles in determining the optical properties.

Toward an experimentally determined {sup 26}Al{sup m}(p,{gamma}){sup 27}Si reaction rate in ONe novae

DOE Office of Scientific and Technical Information (OSTI.GOV)

Deibel, C. M.; Physics Division, Argonne National Laboratory, Argonne, Illinois 60439; Joint Institute for Nuclear Astrophysics, Michigan State University, East Lansing, Michigan 48824

2009-09-15

Strong evidence of the nucleosynthesis of Galactic {sup 26}Al has been found through measurements involving excesses in {sup 26}Mg from the decay of {sup 26}Al in meteoritic inclusions and the 1.809-MeV {gamma}-ray line detected by satellites such as CGRO and INTEGRAL. Several sites for the production of {sup 26}Al have been suggested, including ONe novae. Destruction of {sup 26}Al in ONe novae is possible via the reactions {sup 26}Al{sup g}(p,{gamma}){sup 27}Si and {sup 26}Al{sup m}(p,{gamma}){sup 27}Si. In the present work, resonance parameters for the {sup 26}Al{sup m}(p,{gamma}){sup 27}Si reaction have been determined via studies of the {sup 27}Al({sup 3}He,t){sup 27}Si*(p){supmore » 26}Al{sup m} and {sup 28}Si({sup 3}He,{alpha}){sup 27}Si*(p){sup 26}Al{sup m} reactions. Several new {sup 26}Al{sup m}+p resonances have been discovered within 1 MeV above the proton threshold of 7.691 MeV. Excitation energies and proton-branching ratios for those and previously known states are reported.« less

Index of refraction of GaAs-Al(x)Ga(1-x)As superlattices and multiple quantum wells

NASA Technical Reports Server (NTRS)

Kahen, K. B.; Leburton, J. P.

1987-01-01

A theoretical study of the index of refraction of superlattices and its variation as a function of frequency and the superlattice parameters, i.e., layer width and AlAs composition, is presented. Gamma-region exciton and valence-band mixing effects are included in the model. It is found that these two effects have an important influence on the value of the index of refraction and that superstructure effects rapidly decrease for energies greater than the superlattice potential barriers. Because of the quasi-two-dimensional character of the Gamma-region excitons, the results indicate that the superlattice index of refraction can vary by about two percent at the quantized, bound-exciton, transition energies. Overall, the theoretical results are in good agreement with the experimental data.

Wide bandgap, strain-balanced quantum well tunnel junctions on InP substrates

DOE Office of Scientific and Technical Information (OSTI.GOV)

Lumb, M. P.; US Naval Research Laboratory, Washington, DC 20375; Yakes, M. K.

In this work, the electrical performance of strain-balanced quantum well tunnel junctions with varying designs is presented. Strain-balanced quantum well tunnel junctions comprising compressively strained InAlAs wells and tensile-strained InAlAs barriers were grown on InP substrates using solid-source molecular beam epitaxy. The use of InAlAs enables InP-based tunnel junction devices to be produced using wide bandgap layers, enabling high electrical performance with low absorption. The impact of well and barrier thickness on the electrical performance was investigated, in addition to the impact of Si and Be doping concentration. Finally, the impact of an InGaAs quantum well at the junction interfacemore » is presented, enabling a peak tunnel current density of 47.6 A/cm{sup 2} to be realized.« less

High charge-carrier mobility enables exploitation of carrier multiplication in quantum-dot films

PubMed Central

Sandeep, C. S. Suchand; Cate, Sybren ten; Schins, Juleon M.; Savenije, Tom J.; Liu, Yao; Law, Matt; Kinge, Sachin; Houtepen, Arjan J.; Siebbeles, Laurens D. A.

2013-01-01

Carrier multiplication, the generation of multiple electron–hole pairs by a single photon, is of great interest for solar cells as it may enhance their photocurrent. This process has been shown to occur efficiently in colloidal quantum dots, however, harvesting of the generated multiple charges has proved difficult. Here we show that by tuning the charge-carrier mobility in quantum-dot films, carrier multiplication can be optimized and may show an efficiency as high as in colloidal dispersion. Our results are explained quantitatively by the competition between dissociation of multiple electron–hole pairs and Auger recombination. Above a mobility of ~1 cm2 V−1 s−1, all charges escape Auger recombination and are quantitatively converted to free charges, offering the prospect of cheap quantum-dot solar cells with efficiencies in excess of the Shockley–Queisser limit. In addition, we show that the threshold energy for carrier multiplication is reduced to twice the band gap of the quantum dots. PMID:23974282

Quantum Effects in Biology

NASA Astrophysics Data System (ADS)

Mohseni, Masoud; Omar, Yasser; Engel, Gregory S.; Plenio, Martin B.

2014-08-01

List of contributors; Preface; Part I. Introduction: 1. Quantum biology: introduction Graham R. Fleming and Gregory D. Scholes; 2. Open quantum system approaches to biological systems Alireza Shabani, Masoud Mohseni, Seogjoo Jang, Akihito Ishizaki, Martin Plenio, Patrick Rebentrost, Alàn Aspuru-Guzik, Jianshu Cao, Seth Lloyd and Robert Silbey; 3. Generalized Förster resonance energy transfer Seogjoo Jang, Hoda Hossein-Nejad and Gregory D. Scholes; 4. Multidimensional electronic spectroscopy Tomáš Mančal; Part II. Quantum Effects in Bacterial Photosynthetic Energy Transfer: 5. Structure, function, and quantum dynamics of pigment protein complexes Ioan Kosztin and Klaus Schulten; 6. Direct observation of quantum coherence Gregory S. Engel; 7. Environment-assisted quantum transport Masoud Mohseni, Alàn Aspuru-Guzik, Patrick Rebentrost, Alireza Shabani, Seth Lloyd, Susana F. Huelga and Martin B. Plenio; Part III. Quantum Effects in Higher Organisms and Applications: 8. Excitation energy transfer in higher plants Elisabet Romero, Vladimir I. Novoderezhkin and Rienk van Grondelle; 9. Electron transfer in proteins Spiros S. Skourtis; 10. A chemical compass for bird navigation Ilia A. Solov'yov, Thorsten Ritz, Klaus Schulten and Peter J. Hore; 11. Quantum biology of retinal Klaus Schulten and Shigehiko Hayashi; 12. Quantum vibrational effects on sense of smell A. M. Stoneham, L. Turin, J. C. Brookes and A. P. Horsfield; 13. A perspective on possible manifestations of entanglement in biological systems Hans J. Briegel and Sandu Popescu; 14. Design and applications of bio-inspired quantum materials Mohan Sarovar, Dörthe M. Eisele and K. Birgitta Whaley; 15. Coherent excitons in carbon nanotubes Leonas Valkunas and Darius Abramavicius; Glossary; References; Index.

Beyond the Quantum

NASA Astrophysics Data System (ADS)

Nieuwenhuizen, Theo M.; Mehmani, Bahar; Špička, Václav; Aghdami, Maryam J.; Khrennikov, Andrei Yu

2007-09-01

pt. A. Introductions. The mathematical basis for deterministic quantum mechanics / G.'t Hooft. What did we learn from quantum gravity? / A. Ashtekar. Bose-Einstein condensates and EPR quantum non-locality / F. Laloe. The quantum measurement process: lessons from an exactly solvable model / A.E. Allahverdyan, R. Balian and Th. M. Nieuwenhuizen -- pt. B. Quantum mechanics and quantum information. POVMs: a small but important step beyond standard quantum mechanics / W. M. de Muynck. State reduction by measurements with a null result / G. Nienhuis. Solving open questions in the Bose-Einstein condensation of an ideal gas via a hybrid mixture of laser and statistical physics / M. Kim, A. Svidzinsky and M.O. Scully. Twin-Photon light scattering and causality / G. Puentes, A. Aiello and J. P. Woerdman. Simultaneous measurement of non-commuting observables / G. Aquino and B. Mehmani. Quantum decoherence and gravitational waves / M.T. Jaekel ... [et al.]. Role of various entropies in the black hole information loss problem / Th. M. Nieuwenhuizen and I.V. Volovich. Quantum and super-quantum correlations / G.S. Jaeger -- pt. C. Long distance correlations and bell inequalities. Understanding long-distance quantum correlations / L. Marchildon. Connection of probability models to EPR experiments: probability spaces and Bell's theorem / K. Hess and W. Philipp. Fair sampling vs no-signalling principle in EPR experiments / G. Adenier and A. Yu. Khrennikov -- pt. D. Mathematical foundations. Where the mathematical structure of quantum mechanics comes from / G.M. D'Ariano. Phase space description of quantum mechanics and non-commutative geometry: Wigner-Moyal and Bohm in a wider context / B.J. Hiley. Quantum mechanics as simple algorithm for approximation of classical integrals / A. Yu. Khrennikov. Noncommutative quantum mechanics viewed from Feynman Formalism / J. Lages ... [et al.]. Beyond the quantum in Snyder space / J.F.S. van Huele and M. K. Transtrum -- pt. E. Stochastic electrodynamics. Some quantum experiments from the point of view of Stochastic electrodynamics / V. Spicka ... [et al.]. On the ergodic behaviour of atomic systems under the action of the zero-point radiation field / L. De La Peña and A. M. Cetto. Inertia and the vacuum-view on the emergence of the inertia reaction force / A. Rueda and H. Sunahata -- pt. F. Models for the electron. Rotating Hopf-Kinks: oscillators in the sense of de Broglie / U. Enz. Kerr-Newman particles: symmetries and other properties / H.I. Arcos and J.G. Pereira. Kerr geometry beyond the quantum theory / Th. M. Nieuwenhuizen -- pt. G. Philosophical considerations. Probability in non-collapse interpretations of a quantum mechanics / D. Dieks. The Schrödinger-Park paradox about the concept of "State" in quantum statistical mechanics and quantum information theory is still open: one more reason to go beyond? / G.P. Beretta. The conjecture that local realism is possible / E. Santos -- pt. H. The round table. Round table discussion / A.M. Cetto ... [et al.].

Valence subband coupling effect on polarization of spontaneous emissions from Al-rich AlGaN/AlN quantum wells.

PubMed

Lu, Huimin; Yu, Tongjun; Yuan, Gangcheng; Jia, Chuanyu; Chen, Genxiang; Zhang, Guoyi

2012-12-03

The optical polarization properties of Al-rich AlGaN/AlN quantum wells (QWs) were investigated using the theoretical model based on the k·p method. Numerical results show that there is valence subband coupling which can influence the peak emission wavelength and emission intensity for TE and TM polarization components from Al-rich AlGaN/AlN QWs. Especially the valence subband coupling could be strong enough when CH1 is close to HH1 and LH1 subbands to modulate the critical Al content switching dominant emissions from TE to TM polarization. It is believed that the valence subband coupling may give important influence on polarization properties of spontaneous emissions and should be considered in designing high efficiency AlGaN-based ultraviolet (UV) LEDs.

Mechanism of hole injection enhancement in light-emitting diodes by inserting multiple hole-reservoir layers in electron blocking layer

DOE Office of Scientific and Technical Information (OSTI.GOV)

Zhao, Yukun; Wang, Shuai; Feng, Lungang

In this study, gallium nitride (GaN) based light-emitting diodes (LEDs) with single and multiple hole-reservoir layers (HRLs) inserted in the electron-blocking layer (EBL) have been investigated numerically and experimentally. According to simulation results, a better electron confinement and a higher hole injection level can be achieved by the multiple HRLs inserted in the EBL region. To further reveal the underlying mechanism of hole injection enhancement experimentally, the active regions were intentionally designed to emit photons with three different wavelengths of 440 nm, 460 nm, and 480 nm, respectively. Based on the experimental results of photoluminescence (PL) and time-resolved PL (TRPL) measurements conducted atmore » 298 K, the remarkable enhancement (148%) of PL intensities and significant increase in the decay times of the quantum wells close to p-GaN can be obtained. Therefore, the mechanism is proposed that carriers are able to reserve in the EBL region with multiple HRLs for a much longer time. Meanwhile, carriers could diffuse into the active region by tunnelling and/or thermo-electronic effect and then recombine efficiently, leading to the better carrier reservoir effect and higher hole injection in LEDs. As a result, by inserting multiple HRLs in the EBL region instead of single HRL, the experimental external quantum efficiency is enhanced by 19.8%, while the serious droop ratio is markedly suppressed from 37.0% to 27.6% at the high current injection of 100 A/cm{sup 2}.« less

Two Perspectives of the 2D Unit Area Quantum Sphere and Their Equivalence

NASA Astrophysics Data System (ADS)

Aru, Juhan; Huang, Yichao; Sun, Xin

2017-11-01

2D Liouville quantum gravity (LQG) is used as a toy model for 4D quantum gravity and is the theory of world-sheet in string theory. Recently there has been growing interest in studying LQG in the realm of probability theory: David et al. (Liouville quantum gravity on the Riemann sphere. Commun Math Phys 342(3):869-907, 2016) and Duplantier et al. (Liouville quantum gravity as a mating of trees. ArXiv e-prints: arXiv:1409.7055, 2014) both provide a probabilistic perspective of the LQG on the 2D sphere. In particular, in each of them one may find a definition of the so-called unit area quantum sphere. We examine these two perspectives and prove their equivalence by showing that the respective unit area quantum spheres are the same. This is done by considering a unified limiting procedure for defining both objects.

Phosphor-Free Apple-White LEDs with Embedded Indium-Rich Nanostructures Grown on Strain Relaxed Nano-epitaxy GaN.

PubMed

Soh, C B; Liu, W; Yong, A M; Chua, S J; Chow, S Y; Tripathy, S; Tan, R J N

2010-08-01

Phosphor-free apple-white light emitting diodes have been fabricated using a dual stacked InGaN/GaN multiple quantum wells comprising of a lower set of long wavelength emitting indium-rich nanostructures incorporated in multiple quantum wells with an upper set of cyan-green emitting multiple quantum wells. The light-emitting diodes were grown on nano-epitaxially lateral overgrown GaN template formed by regrowth of GaN over SiO(2) film patterned with an anodic aluminum oxide mask with holes of 125 nm diameter and a period of 250 nm. The growth of InGaN/GaN multiple quantum wells on these stress relaxed low defect density templates improves the internal quantum efficiency by 15% for the cyan-green multiple quantum wells. Higher emission intensity with redshift in the PL peak emission wavelength is obtained for the indium-rich nanostructures incorporated in multiple quantum wells. The quantum wells grown on the nano-epitaxially lateral overgrown GaN has a weaker piezoelectric field and hence shows a minimal peak shift with application of higher injection current. An enhancement of external quantum efficiency is achieved for the apple-white light emitting diodes grown on the nano-epitaxially lateral overgrown GaN template based on the light -output power measurement. The improvement in light extraction efficiency, η(extraction,) was found to be 34% for the cyan-green emission peak and 15% from the broad long wavelength emission with optimized lattice period.

Phosphor-Free Apple-White LEDs with Embedded Indium-Rich Nanostructures Grown on Strain Relaxed Nano-epitaxy GaN

NASA Astrophysics Data System (ADS)

Soh, C. B.; Liu, W.; Yong, A. M.; Chua, S. J.; Chow, S. Y.; Tripathy, S.; Tan, R. J. N.

2010-11-01

Phosphor-free apple-white light emitting diodes have been fabricated using a dual stacked InGaN/GaN multiple quantum wells comprising of a lower set of long wavelength emitting indium-rich nanostructures incorporated in multiple quantum wells with an upper set of cyan-green emitting multiple quantum wells. The light-emitting diodes were grown on nano-epitaxially lateral overgrown GaN template formed by regrowth of GaN over SiO2 film patterned with an anodic aluminum oxide mask with holes of 125 nm diameter and a period of 250 nm. The growth of InGaN/GaN multiple quantum wells on these stress relaxed low defect density templates improves the internal quantum efficiency by 15% for the cyan-green multiple quantum wells. Higher emission intensity with redshift in the PL peak emission wavelength is obtained for the indium-rich nanostructures incorporated in multiple quantum wells. The quantum wells grown on the nano-epitaxially lateral overgrown GaN has a weaker piezoelectric field and hence shows a minimal peak shift with application of higher injection current. An enhancement of external quantum efficiency is achieved for the apple-white light emitting diodes grown on the nano-epitaxially lateral overgrown GaN template based on the light -output power measurement. The improvement in light extraction efficiency, ηextraction, was found to be 34% for the cyan-green emission peak and 15% from the broad long wavelength emission with optimized lattice period.

Highly strained InAlP/InGaAs-based coupled double quantum wells on InP substrates

NASA Astrophysics Data System (ADS)

Gozu, Shin-ichiro; Mozume, Teruo

2018-05-01

InAlP/InGaAs based coupled double quantum wells (CDQWs) are proposed for optelectronic devices utilizing intersubband transitions. The aim of the proposed CDQW structure was to reduce the Al volume as compared with that in InGaAs/AlAsSb(AlAs/InAlAs) based CDQWs. By careful consideration of the band gap energy as well as conduction band offset and lattice constants for III–V materials, highly strained InAlP was chosen as the barrier material. With the appropriate CDQW structure and under the optimized growth conditions, proposed CDQWs exhibited clear X-ray diffraction satellite peaks, and almost identical optical absorption spectrum as compared with the InGaAs/AlAs/InAlAs CDQWs.

Simulations of defect spin qubits in piezoelectric semiconductors

NASA Astrophysics Data System (ADS)

Seo, Hosung

In recent years, remarkable advances have been reported in the development of defect spin qubits in semiconductors for solid-state quantum information science and quantum metrology. Promising spin qubits include the nitrogen-vacancy center in diamond, dopants in silicon, and the silicon vacancy and divacancy spins in silicon carbide. In this talk, I will highlight some of our recent efforts devoted to defect spin qubits in piezoelectric wide-gap semiconductors for potential applications in mechanical hybrid quantum systems. In particular, I will describe our recent combined theoretical and experimental study on remarkably robust quantum coherence found in the divancancy qubits in silicon carbide. We used a quantum bath model combined with a cluster expansion method to identify the microscopic mechanisms behind the unusually long coherence times of the divacancy spins in SiC. Our study indicates that developing spin qubits in complex crystals with multiple types of atom is a promising route to realize strongly coherent hybrid quantum systems. I will also discuss progress and challenges in computational design of new spin defects for use as qubits in piezoelectric crystals such as AlN and SiC, including a new defect design concept using large metal ion - vacancy complexes. Our first principles calculations include DFT computations using recently developed self-consistent hybrid density functional theory and large-scale many-body GW theory. This work was supported by the National Science Foundation (NSF) through the University of Chicago MRSEC under Award Number DMR-1420709.

Efficient quantum transmission in multiple-source networks.

PubMed

Luo, Ming-Xing; Xu, Gang; Chen, Xiu-Bo; Yang, Yi-Xian; Wang, Xiaojun

2014-04-02

A difficult problem in quantum network communications is how to efficiently transmit quantum information over large-scale networks with common channels. We propose a solution by developing a quantum encoding approach. Different quantum states are encoded into a coherent superposition state using quantum linear optics. The transmission congestion in the common channel may be avoided by transmitting the superposition state. For further decoding and continued transmission, special phase transformations are applied to incoming quantum states using phase shifters such that decoders can distinguish outgoing quantum states. These phase shifters may be precisely controlled using classical chaos synchronization via additional classical channels. Based on this design and the reduction of multiple-source network under the assumption of restricted maximum-flow, the optimal scheme is proposed for specially quantized multiple-source network. In comparison with previous schemes, our scheme can greatly increase the transmission efficiency.

Experimental realization of entanglement in multiple degrees of freedom between two quantum memories

PubMed Central

Zhang, Wei; Ding, Dong-Sheng; Dong, Ming-Xin; Shi, Shuai; Wang, Kai; Liu, Shi-Long; Li, Yan; Zhou, Zhi-Yuan; Shi, Bao-Sen; Guo, Guang-Can

2016-01-01

Entanglement in multiple degrees of freedom has many benefits over entanglement in a single one. The former enables quantum communication with higher channel capacity and more efficient quantum information processing and is compatible with diverse quantum networks. Establishing multi-degree-of-freedom entangled memories is not only vital for high-capacity quantum communication and computing, but also promising for enhanced violations of nonlocality in quantum systems. However, there have been yet no reports of the experimental realization of multi-degree-of-freedom entangled memories. Here we experimentally established hyper- and hybrid entanglement in multiple degrees of freedom, including path (K-vector) and orbital angular momentum, between two separated atomic ensembles by using quantum storage. The results are promising for achieving quantum communication and computing with many degrees of freedom. PMID:27841274

Continuous operation of four-state continuous-variable quantum key distribution system

NASA Astrophysics Data System (ADS)

Matsubara, Takuto; Ono, Motoharu; Oguri, Yusuke; Ichikawa, Tsubasa; Hirano, Takuya; Kasai, Kenta; Matsumoto, Ryutaroh; Tsurumaru, Toyohiro

2016-10-01

We report on the development of continuous-variable quantum key distribution (CV-QKD) system that are based on discrete quadrature amplitude modulation (QAM) and homodyne detection of coherent states of light. We use a pulsed light source whose wavelength is 1550 nm and repetition rate is 10 MHz. The CV-QKD system can continuously generate secret key which is secure against entangling cloner attack. Key generation rate is 50 kbps when the quantum channel is a 10 km optical fiber. The CV-QKD system we have developed utilizes the four-state and post-selection protocol [T. Hirano, et al., Phys. Rev. A 68, 042331 (2003).]; Alice randomly sends one of four states {|+/-α⟩,|+/-𝑖α⟩}, and Bob randomly performs x- or p- measurement by homodyne detection. A commercially available balanced receiver is used to realize shot-noise-limited pulsed homodyne detection. GPU cards are used to accelerate the software-based post-processing. We use a non-binary LDPC code for error correction (reverse reconciliation) and the Toeplitz matrix multiplication for privacy amplification.

Droop-free Al_xGa_1-xN/Al_yGa_1-yN quantum-disks-in-nanowires ultraviolet LED emitting at 337 nm on metal/silicon substrates.

PubMed

Janjua, Bilal; Sun, Haiding; Zhao, Chao; Anjum, Dalaver H; Priante, Davide; Alhamoud, Abdullah A; Wu, Feng; Li, Xiaohang; Albadri, Abdulrahman M; Alyamani, Ahmed Y; El-Desouki, Munir M; Ng, Tien Khee; Ooi, Boon S

2017-01-23

Currently the AlGaN-based ultraviolet (UV) solid-state lighting research suffers from numerous challenges. In particular, low internal quantum efficiency, low extraction efficiency, inefficient doping, large polarization fields, and high dislocation density epitaxy constitute bottlenecks in realizing high power devices. Despite the clear advantage of quantum-confinement nanostructure, it has not been widely utilized in AlGaN-based nanowires. Here we utilize the self-assembled nanowires (NWs) with embedding quantum-disks (Qdisks) to mitigate these issues, and achieve UV emission of 337 nm at 32 A/cm² (80 mA in 0.5 × 0.5 mm² device), a turn-on voltage of ~5.5 V and droop-free behavior up to 120 A/cm² of injection current. The device was grown on a titanium-coated n-type silicon substrate, to improve current injection and heat dissipation. A narrow linewidth of 11.7 nm in the electroluminescence spectrum and a strong wavefunctions overlap factor of 42% confirm strong quantum confinement within uniformly formed AlGaN/AlGaN Qdisks, verified using transmission electron microscopy (TEM). The nitride-based UV nanowires light-emitting diodes (NWs-LEDs) grown on low cost and scalable metal/silicon template substrate, offers a scalable, environment friendly and low cost solution for numerous applications, such as solid-state lighting, spectroscopy, medical science and security.

Effective optimization using sample persistence: A case study on quantum annealers and various Monte Carlo optimization methods

NASA Astrophysics Data System (ADS)

Karimi, Hamed; Rosenberg, Gili; Katzgraber, Helmut G.

2017-10-01

We present and apply a general-purpose, multistart algorithm for improving the performance of low-energy samplers used for solving optimization problems. The algorithm iteratively fixes the value of a large portion of the variables to values that have a high probability of being optimal. The resulting problems are smaller and less connected, and samplers tend to give better low-energy samples for these problems. The algorithm is trivially parallelizable since each start in the multistart algorithm is independent, and could be applied to any heuristic solver that can be run multiple times to give a sample. We present results for several classes of hard problems solved using simulated annealing, path-integral quantum Monte Carlo, parallel tempering with isoenergetic cluster moves, and a quantum annealer, and show that the success metrics and the scaling are improved substantially. When combined with this algorithm, the quantum annealer's scaling was substantially improved for native Chimera graph problems. In addition, with this algorithm the scaling of the time to solution of the quantum annealer is comparable to the Hamze-de Freitas-Selby algorithm on the weak-strong cluster problems introduced by Boixo et al. Parallel tempering with isoenergetic cluster moves was able to consistently solve three-dimensional spin glass problems with 8000 variables when combined with our method, whereas without our method it could not solve any.

On the gain properties of “thin” elastically strained InGaAs/InGaAlAs quantum wells emitting in the near-infrared spectral region near 1550 nm

DOE Office of Scientific and Technical Information (OSTI.GOV)

Novikov, I. I.; Karachinsky, L. Ya.; Kolodeznyi, E. S.

The results of experimental studies of the gain properties of “thin” (3.2 nm thick) elastically strained InGaAs/InGaAlAs quantum wells emitting in the near-infrared spectral region near 1550 nm are presented. The results of studying the threshold and gain characteristics of stripe laser diodes with active regions based on “thin” quantum wells with a lattice–substrate mismatch of +1.0% show that the quantum wells under study exhibit a high modal gain of 11 cm{sup –1} and a low transparency current density of 46 A/cm{sup 2} per quantum well.

Strained-layer InGaAs/GaAs/AlGaAs single quantum well lasers with high internal quantum efficiency

NASA Technical Reports Server (NTRS)

Larsson, Anders; Cody, Jeffrey; Lang, Robert J.

1989-01-01

Low threshold current density strained-layer In(0.2)Ga(0.8)As/GaAs/AlGaAs single quantum well lasers, emitting at 980 nm, have been grown by molecular beam epitaxy. Contrary to what has been reported for broad-area lasers with pseudomorphic InGaAs active layers grown by metalorganic chemical vapor deposition, these layers exhibit a high internal quantum efficiency (about 90 percent). The maximum external differential quantum efficiency is 70 percent, limited by an anomalously high internal loss possibly caused by a large lateral spreading of the optical mode. In addition, experimental results supporting the theoretically predicted strain-induced reduction of the valence-band nonparabolicity and density of states are presented.

Pathophysiology of Stress in Wild and Managed-Care Bottlenose Dolphins (Tursiops truncatus)

DTIC Science & Technology

2014-09-30

populations to establish reference ranges and assess variability across populations (Schwacke et al., 2008). Additionally , thyroid reference values were...stress evaluation using classic stress hormones were paired with biomarker expression using proteomics and metabolomics to provide additional stress...dolphins (27 from the Indian River Lagoon, FL and 22 from Charleston, SC). Additionally , 10 GA and 10 MMP dolphins were sampled multiple times during

Optical Control of Intersubband Absorption in a Multiple Quantum Well-Embedded Semiconductor Microcravity

NASA Technical Reports Server (NTRS)

Liu, Ansheng; Ning, Cun-Zheng

2000-01-01

Optical intersubband response of a multiple quantum well (MQW)-embedded microcavity driven by a coherent pump field is studied theoretically. The n-type doped MQW structure with three subbands in the conduction band is sandwiched between a semi-infinite medium and a distributed Bragg reflector (DBR). A strong pump field couples the two upper subbands and a weak field probes the two lower subbands. To describe the optical response of the MQW-embedded microcavity, we adopt a semi-classical nonlocal response theory. Taking into account the pump-probe interaction, we derive the probe-induced current density associated with intersubband transitions from the single-particle density-matrix formalism. By incorporating the current density into the Maxwell equation, we solve the probe local field exactly by means of Green's function technique and the transfer-matrix method. We obtain an exact expression for the probe absorption coefficient of the microcavity. For a GaAs/Al(sub x)Ga(sub 1-x)As MQW structure sandwiched between a GaAs/AlAs DBR and vacuum, we performed numerical calculations of the probe absorption spectra for different parameters such as pump intensity, pump detuning, and cavity length. We find that the probe spectrum is strongly dependent on these parameters. In particular, we find that the combination of the cavity effect and the Autler-Townes effect results in a triplet in the optical spectrum of the MQW system. The optical absorption peak value and its location can be feasibly controlled by varying the pump intensity and detuning.

Quantum filtering for multiple diffusive and Poissonian measurements

NASA Astrophysics Data System (ADS)

Emzir, Muhammad F.; Woolley, Matthew J.; Petersen, Ian R.

2015-09-01

We provide a rigorous derivation of a quantum filter for the case of multiple measurements being made on a quantum system. We consider a class of measurement processes which are functions of bosonic field operators, including combinations of diffusive and Poissonian processes. This covers the standard cases from quantum optics, where homodyne detection may be described as a diffusive process and photon counting may be described as a Poissonian process. We obtain a necessary and sufficient condition for any pair of such measurements taken at different output channels to satisfy a commutation relationship. Then, we derive a general, multiple-measurement quantum filter as an extension of a single-measurement quantum filter. As an application we explicitly obtain the quantum filter corresponding to homodyne detection and photon counting at the output ports of a beam splitter.

Local surface plasmon enhanced polarization and internal quantum efficiency of deep ultraviolet emissions from AlGaN-based quantum wells.

PubMed

Zhang, Cai; Tang, Ning; Shang, Liangliang; Fu, Lei; Wang, Weiying; Xu, Fujun; Wang, Xinqiang; Ge, Weikun; Shen, Bo

2017-05-24

We report the enhancement of the polarization and internal quantum efficiency (IQE) of deep-UV LEDs by evaporating Al nanoparticles on the device surface to induce localized surface plasmons (LSPs). The deep-UV LEDs polarization is improved due to part of TM emission turns into TE emission through LSPs coupling. The significantly enhanced IQE is attributed to LSPs coupling, which suppress the participation of delocalized and dissociated excitons to non-radiative recombination process.

Imaging quantum transport using scanning gate microscopy

NASA Astrophysics Data System (ADS)

Hackens, Benoit

2014-03-01

Quantum transport in nanodevices is usually probed thanks to measurements of the electrical resistance or conductance, which lack the spatial resolution necessary to probe electron behaviour inside the devices. In this talk, we will show that scanning gate microscopy (SGM) yields real-space images of quantum transport phenomena inside archetypal mesoscopic devices such as quantum point contacts and quantum rings. We will first discuss the SGM technique, which is based on mapping the electrical conductance of a device as an electrically-biased sharp metallic tip scans in its vicinity. With SGM, we demonstrated low temperature imaging of the electron probability density and interferences in embedded mesoscopic quantum rings [B. Hackens et al., Nat. Phys. 2, 826 (2006)]. At high magnetic field, thanks to the SGM conductance maps, one can decrypt complex transport phenomena such as tunneling between quantum Hall edge state, either direct or through localized states [B. Hackens et al., Nat. Comm. 1, 39 (2010)]. Moreover, the technique also allows to perform local spectroscopy of electron transport through selected localized states [F. Martins et al., New J. of Phys. 15, 013049 (2013); F. Martins et al., Sci. Rep. 3, 1416 (2013)]. Overall, these examples show that scanning gate microscopy is a powerful tool for imaging charge carrier behavior inside devices fabricated from a variety of materials, and opens the way towards a more intimate manipulation of charge and quasiparticle transport. This work was performed in collaboration with F. Martins, S. Faniel, B. Brun, M. Pala, X. Wallart, L. Desplanque, B. Rosenow, T. Ouisse, H. Sellier, S. Huant and V. Bayot.

A hole accelerator for InGaN/GaN light-emitting diodes

NASA Astrophysics Data System (ADS)

Zhang, Zi-Hui; Liu, Wei; Tan, Swee Tiam; Ji, Yun; Wang, Liancheng; Zhu, Binbin; Zhang, Yiping; Lu, Shunpeng; Zhang, Xueliang; Hasanov, Namig; Sun, Xiao Wei; Demir, Hilmi Volkan

2014-10-01

The quantum efficiency of InGaN/GaN light-emitting diodes (LEDs) has been significantly limited by the insufficient hole injection, and this is caused by the inefficient p-type doping and the low hole mobility. The low hole mobility makes the holes less energetic, which hinders the hole injection into the multiple quantum wells (MQWs) especially when a p-type AlGaN electron blocking layer (EBL) is adopted. In this work, we report a hole accelerator to accelerate the holes so that the holes can obtain adequate kinetic energy, travel across the p-type EBL, and then enter the MQWs more efficiently and smoothly. In addition to the numerical study, the effectiveness of the hole accelerator is experimentally shown through achieving improved optical output power and reduced efficiency droop for the proposed InGaN/GaN LED.

Relationship between microstructure and optical properties of a novel perovskite C12PbI4 embedded in matrix of porous alumina

NASA Astrophysics Data System (ADS)

Zaghdoudi, W.; Bardaoui, A.; Khalifa, N.; Chtourou, R.

2013-01-01

In this study, organic-inorganic hybrid perovskite multiple quantum wells (PbI QWs) embedded in porous anodic alumina (PAA) thin films on glass and aluminum substrates are investigated in detail. The pore height and diameter of the nanoscale structure of porous anodic alumina (PAA) film produced by the anodization technique are controllable. The synthesized films are characterized morphologically using the atomic force microscopy (AFM). Scanning electron microscopy (SEM) study showed granular surface. The structural and optical properties were investigated by X-ray diffraction (XRD), photoluminescence (PL) and UV-Vis-NIR spectrophotometer. The effect of the two different substrates on the impregnation of the PbI QW in the PAA is presented. Both PL and AFM studies show a better penetration of the PbI QW in the case of the Al substrate providing a wider pore diameter. Remarkable enhancement of quantum confinement is demonstrated.

Time-domain multiple-quantum NMR

DOE Office of Scientific and Technical Information (OSTI.GOV)

Weitekamp, Daniel P.

1982-11-01

The development of time-domain multiple-quantum nuclear magnetic resonance is reviewed through mid 1982 and some prospects for future development are indicated. Particular attention is given to the problem of obtaining resolved, interpretable, many-quantum spectra for anisotropic magnetically isolated systems of coupled spins. New results are presented on a number of topics including the optimization of multiple-quantum-line intensities, analysis of noise in two-dimensional spectroscopy, and the use of order-selective excitation for cross polarization between nuclear-spin species.

Computer studies of multiple-quantum spin dynamics

DOE Office of Scientific and Technical Information (OSTI.GOV)

Murdoch, J.B.

The excitation and detection of multiple-quantum (MQ) transitions in Fourier transform NMR spectroscopy is an interesting problem in the quantum mechanical dynamics of spin systems as well as an important new technique for investigation of molecular structure. In particular, multiple-quantum spectroscopy can be used to simplify overly complex spectra or to separate the various interactions between a nucleus and its environment. The emphasis of this work is on computer simulation of spin-system evolution to better relate theory and experiment.

Magnetic avalanches in manganese-acetate, "magnetic deflagration"

NASA Astrophysics Data System (ADS)

Suzuki, Yoko

Mn12-acetate, first synthesized in 1980 by Lis, is one example of a class of many molecules called single molecule magnets (SMMs) or molecular nanomagnets. These molecules have several atomic spins strongly coupled together within each molecule. They exhibit interesting quantum mechanical phenomena at low temperatures such as quantum tunneling of magnetization, which was first found with Mn12-acetate in 1996 by Friedman, et al. , and Berry phase oscillations which were measured in Fe8 (another SMM) in 1999 by Wernsdorfer, et al. In addition to possible application as memory storage and qubits for quantum computers, these systems provide the means for studies of mesoscopic physics as well as the interactions of the molecules with their environment, such as phonon, photon, nuclear spin, intermolecular dipole, and exchange interactions. Mn12-acetate has twelve Mn ions magnetically coupled in the center of the molecule yielding a giant spin of S = 10 at low temperature. It also has a large uniaxial anisotropy of 65 K. Below 3 K, magnetization curves show strong hysteresis due to the anisotropy barrier. At thesis temperatures, the spin relaxes through the barrier by quantum tunneling of magnetization, which produces regularly-spaced multiple resonant steps in the hysteresis curve. Magnetic avalanches, first detected by Paulsen et al., also occur for some samples only at low temperature, leading to a very fast single-step reversal of the full magnetization, which clearly differs from relaxation by tunneling. In this thesis, I present the results of detailed experimental studies of two aspects of magnetic avalanche phenomenon: "conditions for the triggering of avalanches" and "propagation of the avalanche front". In the first study, we find the magnetic fields at which avalanches occur are stochastically distributed in a particular range of fields. For the second study, we conducted local time-resolved measurements. The results indicate the magnetization avalanches spread as a narrow interface that propagate through the crystal at a constant velocity which is roughly two orders of magnitude smaller than the speed of sound in solids. We argue this phenomenon is closely analogous to the propagation of a flame front(deflagration) through a flammable chemical substance.

Quantum states of neutrons in the gravitational and centrifugal potentials in a new GRANIT spectrometer

ScienceCinema

Nesvizhevsky, Valery

2018-05-14

We will discuss the scientific program to be studied in a new gravitational spectrometer GRANIT in a broad context of quantum states (quantum behaviour) of ultracold neutrons (UCN) in gravitational [1] and centrifugal [2] potentials, as well as applications of these phenomena/spectrometer to various domains of physics, ranging from studies of fundamental short-range interactions and symmetries to neutron quantum optics and reflectometry using UCN. All these topics, as well as related instrumental and methodical developments have been discussed during dedicated GRANIT-2010 Workshop [3]. The GRANIT spectrometer has been recently installed at the Institut Laue-Langevin, Grenoble, France [4] and could become operational in near future. 1. V.V. Nesvizhevsky et al (2002), Nature 415, 297. 2. V.V. Nesvizhevsky et al (2010), Nature Physics 6, 114. 3. GRANIT-2010, Les Houches, 14-19 february 2010. 4. M. Kreuz et al (2009), NIM 611, 326.

Field-effect transistor having a superlattice channel and high carrier velocities at high applied fields

DOEpatents

Chaffin, R.J.; Dawson, L.R.; Fritz, I.J.; Osbourn, G.C.; Zipperian, T.E.

1987-06-08

A field effect transistor comprises a semiconductor having a source, a drain, a channel and a gate in operational relationship. The semiconductor is a strained layer superlattice comprising alternating quantum well and barrier layers, the quantum well layers and barrier layers being selected from the group of layer pairs consisting of InGaAs/AlGaAs, InAs/InAlGaAs, and InAs/InAlAsP. The layer thicknesses of the quantum well and barrier layers are sufficiently thin that the alternating layers constitute a superlattice which has a superlattice conduction band energy level structure in k-vector space. The layer thicknesses of the quantum well layers are selected to provide a superlattice L/sub 2D/-valley which has a shape which is substantially more two-dimensional than that of said bulk L-valley. 2 figs.

Transmission electron microscopy of AlGaAs/GaAs quantum cascade laser structures.

PubMed

Walther, T; Krysa, A B

2017-12-01

Quantum cascade lasers can be efficient infrared radiation sources and consist of several hundreds of very thin layers arranged in stacks that are repeated periodically. Both the thicknesses of the individual layers as well as the period lengths need to be monitored to high precision. Different transmission electron microscopy methods have been combined to analyse AlGaAs/GaAs quantum cascade laser structures in cross-section. We found a small parabolic variation of the growth rate during deposition, affecting the stack periodicity and a reduced aluminium content of the AlGaAs barriers, whereas their widths as well as those of the GaAs quantum wells agreed with the nominal values within one atomic layer. Growth on an offcut substrate led to facets and steps at the interfaces. © 2017 The Authors Journal of Microscopy © 2017 Royal Microscopical Society.

Electronic and optical properties of HEMT heterostructures with δ-Si doped GaAs/AlGaAs quantum rings — quantum well system

NASA Astrophysics Data System (ADS)

Sibirmovsky, Y. D.; Vasil'evskii, I. S.; Vinichenko, A. N.; Zhigunov, D. M.; Eremin, I. S.; Kolentsova, O. S.; Safonov, D. A.; Kargin, N. I.

2017-11-01

Samples of δ-Si doped AlGaAs/GaAs/AlGaAs HEMT heterostructures with GaAs quantum rings (QRs) on top of the quantum well (QW) were grown by molecular beam epitaxy and their properties were compared to the reference samples without QRs. The thickness of the QW was 6 - 10 nm for the samples with QRs and 20 nm for the reference samples. Photoluminescence measurements at low temperatures for all samples show at least two distinct lines in addition to the bulk GaAs line. The Hall effect and low temperature magnetotransport measurements at 4 - 320 K show that conductivity with and without illumination decreases significantly with QRs introduction, however the relative photoconductivity increases. Samples with 6 nm QW are insulating, which could be caused by the strong localization of the charge carriers in the QRs.

Micrometer-Scale Ballistic Transport of Electron Pairs in LaAlO_{3}/SrTiO_{3} Nanowires.

PubMed

Tomczyk, Michelle; Cheng, Guanglei; Lee, Hyungwoo; Lu, Shicheng; Annadi, Anil; Veazey, Joshua P; Huang, Mengchen; Irvin, Patrick; Ryu, Sangwoo; Eom, Chang-Beom; Levy, Jeremy

2016-08-26

High-mobility complex-oxide heterostructures and nanostructures offer new opportunities for extending the paradigm of quantum transport beyond the realm of traditional III-V or carbon-based materials. Recent quantum transport investigations with LaAlO_{3}/SrTiO_{3}-based quantum dots reveal the existence of a strongly correlated phase in which electrons form spin-singlet pairs without becoming superconducting. Here, we report evidence for the micrometer-scale ballistic transport of electron pairs in quasi-1D LaAlO_{3}/SrTiO_{3} nanowire cavities. In the paired phase, Fabry-Perot-like quantum interference is observed, in sync with conductance oscillations observed in the superconducting regime (at a zero magnetic field). Above a critical magnetic field B_{p}, the electron pairs unbind and the conductance oscillations shift with the magnetic field. These experimental observations extend the regime of ballistic electronic transport to strongly correlated phases.

Identification of analog states in the T=1/2 A=27 mirror system from low excitation energies to the region of hydrogen burning in the {sup 26}Al{sup g,m}(p,{gamma}){sup 27}Si reactions

DOE Office of Scientific and Technical Information (OSTI.GOV)

Lotay, G.; Woods, P. J.; Seweryniak, D.

2011-09-15

The reactions {sup 26}Al{sup g}(p, {gamma}){sup 27}Si and {sup 26}Al{sup m}(p, {gamma}){sup 27}Si are important for influencing the galactic abundance of the cosmic {gamma}-ray emitter {sup 26}Al{sup g} and for the excess abundance of {sup 26}Mg found in presolar grains, respectively. Precise excitation energies and spin assignments of states from the ground state to the region of astrophysical interest in {sup 27}Si, including the identification and pairing of key astrophysical resonances with analog states in the mirror nucleus {sup 27}Al, are reported using {gamma} rays observed in the {sup 12}C + {sup 16}O fusion reaction. The detailed evolution of Coulombmore » energy differences between the states in {sup 27}Si and {sup 27}Al is explored, including the region above the astrophysical reaction thresholds.« less

Multichannel-quantum-defect-theory treatment of preionized and predissociated triplet gerade levels of H2

NASA Astrophysics Data System (ADS)

Matzkin, A.; Jungen, Ch.; Ross, S. C.

2000-12-01

Multichannel quantum defect theory (MQDT) is used to calculate highly excited predissociated and preionized triplet gerade states of H2. The treatment is ab initio and is based on the clamped-nuclei quantum-defect matrices and dipole transition moments derived from quantum-chemical potential energy curves by Ross et al. [Can. J. Phys. (to be published)]. Level positions, predissociation or preionization widths and relative intensities are found to be in good agreement with those observed by Lembo et al. [Phys. Rev. A 38, 3447 (1988); J. Chem. Phys. 92, 2219 (1990)] by an optical-optical double resonance photoionization or depletion technique.

Theory of electronic and optical properties for different shapes of InAs/In0.52Al0.48As quantum wires

NASA Astrophysics Data System (ADS)

Bouazra, A.; Nasrallah, S. Abdi-Ben; Said, M.

2016-01-01

In this work, we propose an efficient method to investigate optical properties as well as their dependence on geometrical parameters in InAs/InAlAs quantum wires. The used method is based on the coordinate transformation and the finite difference method. It provides sufficient accuracy, stability and flexibility with respect to the size and shape of the quantum wire. The electron and hole energy levels as well as their corresponding wave functions are investigated for different shape of quantum wires. The optical transition energies, the emission wavelengths and the oscillator strengths are also studied.

On the number of entangled qubits in quantum wireless sensor networks

NASA Astrophysics Data System (ADS)

Mohapatra, Amit Kumar; Balakrishnan, S.

2016-08-01

Wireless sensor networks (WSNs) can take the advantages by utilizing the security schemes based on the concepts of quantum computation and cryptography. However, quantum wireless sensor networks (QWSNs) are shown to have many practical constraints. One of the constraints is the number of entangled qubits which is very high in the quantum security scheme proposed by [Nagy et al., Nat. Comput. 9 (2010) 819]. In this work, we propose a modification of the security scheme introduced by Nagy et al. and hence the reduction in the number of entangled qubits is shown. Further, the modified scheme can overcome some of the constraints in the QWSNs.

The aluminum ordering in aluminosilicates: a dipolar 27Al NMR spectroscopy study.

PubMed

Gee, Becky A

2004-01-01

The spatial ordering of aluminum atoms in CsAl(SiO3)2 and 3Al2O3.2SiO2 was probed by 27Al dipolar solid-state NMR spectroscopy. The 27Al response to a Hahn spin-echo pulse sequence in a series of aluminum-containing model crystalline compounds demonstrates that quantitative 27Al homonuclear dipolar second moments can be obtained to within +/-20% of the theoretical values, if evaluation of the spin-echo response curve is limited to short evolution periods (2t1 < or = 0.10 ms). Additionally, selective excitation of the central transition m = 1/2 --> -1/2 is necessary in order to ensure quantitative results. Restriction of spin exchange affecting the dephasing of the magnetization may decelerate the spin-echo decay at longer evolution periods. Considering these restraints, the method was used to probe the spatial distribution of aluminum atoms among the tetrahedral sites in two aluminosilicate materials. Experimental 27Al spin-echo response data for the aluminosilicates CsAl(SiO3)2 (synthetic pollucite) and 3Al2O3.2SiO2 (mullite) are compared with theoretical data based on (I) various degrees of aluminum-oxygen-aluminum bond formation among tetrahedrally coordinated aluminum atoms (Al(T(d) )-O-Al(T(d) )) and (II) the maximum avoidance of Al(T(d) )-O-Al(T(d) ) bonding. Analysis of the second moment values and resulting echo decay responses suggests that partial suppression of spin exchange among aluminum atoms in crystallographically distinct sites may contribute to the 27Al spin echo decay in 3Al2O3.2SiO2, thus complicating quantitative analysis of the data. Silicon-29 and aluminum-27 magic angle spinning (MAS) NMR spectra of 3Al2O3.2SiO2 are consistent with those previously reported. The experimental 27Al spin-echo response behavior of CsAl(SiO3)2 differs from the theoretical response behavior based on the maximum avoidance of Al-O-Al bonding between tetrahedral aluminum sites in CsAl(SiO3)2. A single unresolved resonance is observed in both the silicon-29 and aluminum-27 MAS spectra of CsAl(SiO3)2. Copyright 2003 John Wiley & Sons, Ltd.

Efficient Quantum Transmission in Multiple-Source Networks

PubMed Central

Luo, Ming-Xing; Xu, Gang; Chen, Xiu-Bo; Yang, Yi-Xian; Wang, Xiaojun

2014-01-01

A difficult problem in quantum network communications is how to efficiently transmit quantum information over large-scale networks with common channels. We propose a solution by developing a quantum encoding approach. Different quantum states are encoded into a coherent superposition state using quantum linear optics. The transmission congestion in the common channel may be avoided by transmitting the superposition state. For further decoding and continued transmission, special phase transformations are applied to incoming quantum states using phase shifters such that decoders can distinguish outgoing quantum states. These phase shifters may be precisely controlled using classical chaos synchronization via additional classical channels. Based on this design and the reduction of multiple-source network under the assumption of restricted maximum-flow, the optimal scheme is proposed for specially quantized multiple-source network. In comparison with previous schemes, our scheme can greatly increase the transmission efficiency. PMID:24691590

GaN ultraviolet p-i-n photodetectors with enhanced deep ultraviolet quantum efficiency

NASA Astrophysics Data System (ADS)

Wang, Guosheng; Xie, Feng; Wang, Jun; Guo, Jin

2017-10-01

GaN ultraviolet (UV) p-i-n photodetectors (PDs) with a thin p-AlGaN/GaN contact layer are designed and fabricated. The PD exhibits a low dark current density of˜7 nA/cm2 under -5 V, and a zero-bias peak responsivity of ˜0.16 A/W at 360 nm, which corresponds to a maximum quantum efficiency of 55%. It is found that, in the wavelength range between 250 and 365 nm, the PD with thin p-AlGaN/GaN contact layer exhibits enhanced quantum efficiency especially in a deep-UV wavelength range, than that of the control PD with conventional thin p-GaN contact layer. The improved quantum efficiency of the PD with thin p-AlGaN/GaN contact layer in the deep-UV wavelength range is mainly attributed to minority carrier reflecting properties of thin p-AlGaN/GaN heterojunction which could reduce the surface recombination loss of photon-generated carriers and improve light current collection efficiency.

Exciton multiplication from first principles.

PubMed

Jaeger, Heather M; Hyeon-Deuk, Kim; Prezhdo, Oleg V

2013-06-18

Third-generation photovolatics require demanding cost and power conversion efficiency standards, which may be achieved through efficient exciton multiplication. Therefore, generating more than one electron-hole pair from the absorption of a single photon has vast ramifications on solar power conversion technology. Unlike their bulk counterparts, irradiated semiconductor quantum dots exhibit efficient exciton multiplication, due to confinement-enhanced Coulomb interactions and slower nonradiative losses. The exact characterization of the complicated photoexcited processes within quantum-dot photovoltaics is a work in progress. In this Account, we focus on the photophysics of nanocrystals and investigate three constituent processes of exciton multiplication, including photoexcitation, phonon-induced dephasing, and impact ionization. We quantify the role of each process in exciton multiplication through ab initio computation and analysis of many-electron wave functions. The probability of observing a multiple exciton in a photoexcited state is proportional to the magnitude of electron correlation, where correlated electrons can be simultaneously promoted across the band gap. Energies of multiple excitons are determined directly from the excited state wave functions, defining the threshold for multiple exciton generation. This threshold is strongly perturbed in the presence of surface defects, dopants, and ionization. Within a few femtoseconds following photoexcitation, the quantum state loses coherence through interactions with the vibrating atomic lattice. The phase relationship between single excitons and multiple excitons dissipates first, followed by multiple exciton fission. Single excitons are coupled to multiple excitons through Coulomb and electron-phonon interactions, and as a consequence, single excitons convert to multiple excitons and vice versa. Here, exciton multiplication depends on the initial energy and coupling magnitude and competes with electron-phonon energy relaxation. Multiple excitons are generated through impact ionization within picoseconds. The basis of exciton multiplication in quantum dots is the collective result of photoexcitation, dephasing, and nonadiabatic evolution. Each process is characterized by a distinct time-scale, and the overall multiple exciton generation dynamics is complete by about 10 ps. Without relying on semiempirical parameters, we computed quantum mechanical probabilities of multiple excitons for small model systems. Because exciton correlations and coherences are microscopic, quantum properties, results for small model systems can be extrapolated to larger, realistic quantum dots.

Coaxial GaAs-AlGaAs core-multishell nanowire lasers with epitaxial gain control

DOE Office of Scientific and Technical Information (OSTI.GOV)

Stettner, T., E-mail: Thomas.Stettner@wsi.tum.de, E-mail: Gregor.Koblmueller@wsi.tum.de, E-mail: Jonathan.Finley@wsi.tum.de; Zimmermann, P.; Loitsch, B.

2016-01-04

We demonstrate the growth and single-mode lasing operation of GaAs-AlGaAs core-multishell nanowires (NW) with radial single and multiple GaAs quantum wells (QWs) as active gain media. When subject to optical pumping lasing emission with distinct s-shaped input-output characteristics, linewidth narrowing and emission energies associated with the confined QWs are observed. Comparing the low temperature performance of QW NW laser structures having 7 coaxial QWs with a nominally identical structure having only a single QW shows that the threshold power density reduces several-fold, down to values as low as ∼2.4 kW/cm{sup 2} for the multiple QW NW laser. This confirms that themore » individual radial QWs are electronically weakly coupled and that epitaxial design can be used to optimize the gain characteristics of the devices. Temperature-dependent investigations show that lasing prevails up to 300 K, opening promising new avenues for efficient III–V semiconductor NW lasers with embedded low-dimensional gain media.« less

Nonadditivity of quantum and classical capacities for entanglement breaking multiple-access channels and the butterfly network

DOE Office of Scientific and Technical Information (OSTI.GOV)

Grudka, Andrzej; National Quantum Information Centre of Gdansk, PL-81-824 Sopot; Horodecki, Pawel

2010-06-15

We analyze quantum network primitives which are entanglement breaking. We show superadditivity of quantum and classical capacity regions for quantum multiple-access channels and the quantum butterfly network. Since the effects are especially visible at high noise they suggest that quantum information effects may be particularly helpful in the case of the networks with occasional high noise rates. The present effects provide a qualitative borderline between superadditivities of bipartite and multipartite systems.

Photoluminescence Investigation of p-type GaAs/AlGaAs Quantum Well Infrared Detectors(QWIPs) Designed for Normal Incidence Detection in the 10 micron region.

NASA Astrophysics Data System (ADS)

Hegde, S. M.; Brown, Gail J.; Capano, Michael; Eyink, Kurt

1997-03-01

We have investigated MBE grown p-type, GaAs/AlGaAs QWIPs by photoluminescence spectroscopy. Excitation intensity, and temperature dependent photoluminescence spectra from 4.5K to 295K were studied. The PL-spectra were fitted with multiple gaussians to extract information on inter-subband (c1-hh1) peak loactions, full width at half maximum(FWHM), intensity and integrated intensity. A detailed analysis of the origin of the observed peaks and their thermal actiavtion energies was carried out. X-ray diffraction measurements were used to confirm the high qualiuty of the grown MQW structures and the Al-composition in the AlGaAs barriers. Temperature dependent photoconductivity measurements were used to measure the relative photoresponse from the hh1-to-continuum states in the valence subband transitions of these detector structures in the 10 micron region. It is found that high photoluminescence efficiency for the intersubband free-to-free transition at higher temperatures correl! ates with good photoresponse at th ose higher temperatures.

1.3 μm VCSELs: InGaAs/GaAs, GaInNAs/GaAs multiple quantum wells, and InAs/GaAs quantum dots — three candidates as active material

NASA Astrophysics Data System (ADS)

Gilet, Ph.; Pougeoise, E.; Grenouillet, L.; Grosse, Ph.; Olivier, N.; Poncet, S.; Chelnokov, A.; Gérard, J. M.; Stevens, R.; Hamelin, R.; Hammar, M.; Berggren, J.; Sundgren, P.

2007-02-01

In this article, we report our results on 1.3μm VCSELs for optical interconnection applications. Room temperature continuous-wave lasing operation is demonstrated for top emitting oxide-confined devices with three different active materials, highly strained InGaAs/GaAs(A) and GaInNAs/GaAs (B) multiple quantum wells (MQW) or InAs/GaAs (C) quantum dots (QD). Conventional epitaxial structures grown respectively by Metal Organic Vapour Phase Epitaxy (MOVPE), Molecular Beam Epitaxy (MBE) and MBE, contain fully doped GaAs/AlGaAs DBRs. All three epilayers are processed in the same way. Current and optical confinement are realized by selective wet oxidation. Circular apertures from 2 (micron)m to 16 (micron)m diameters are defined. At room temperature and in continuous wave operation, all three systems exhibit lasing operation at wavelengths above 1 275nm and reached 1 300nm for material (A). Typical threshold currents are in the range [1- 10]mA and are strongly dependent firstly on oxide diameter and secondly on temperature. Room temperature cw maximum output power corresponds respectively to 1.77mW, 0.5mW and 0.6mW. By increasing driving current, multimode operation occurs at different level depending on the oxide diameter. In case (A), non conventional modal behaviors will be presented and explained by the presence of specific oxide modes. Thermal behaviors of the different devices have been compared. In case (A) and (C) we obtain a negative T0. We will conclude on the different active materials in terms of performances with respect to 1300nm VCSEL applications.

Quantum dot quantum cascade infrared photodetector

DOE Office of Scientific and Technical Information (OSTI.GOV)

Wang, Xue-Jiao; Zhai, Shen-Qiang; Zhuo, Ning

2014-04-28

We demonstrate an InAs quantum dot quantum cascade infrared photodetector operating at room temperature with a peak detection wavelength of 4.3 μm. The detector shows sensitive photoresponse for normal-incidence light, which is attributed to an intraband transition of the quantum dots and the following transfer of excited electrons on a cascade of quantum levels. The InAs quantum dots for the infrared absorption were formed by making use of self-assembled quantum dots in the Stranski–Krastanov growth mode and two-step strain-compensation design based on InAs/GaAs/InGaAs/InAlAs heterostructure, while the following extraction quantum stairs formed by LO-phonon energy are based on a strain-compensated InGaAs/InAlAs chirpedmore » superlattice. Johnson noise limited detectivities of 3.64 × 10{sup 11} and 4.83 × 10{sup 6} Jones at zero bias were obtained at 80 K and room temperature, respectively. Due to the low dark current and distinct photoresponse up to room temperature, this device can form high temperature imaging.« less

Using Monte Carlo ray tracing simulations to model the quantum harmonic oscillator modes observed in uranium nitride

NASA Astrophysics Data System (ADS)

Lin, J. Y. Y.; Aczel, A. A.; Abernathy, D. L.; Nagler, S. E.; Buyers, W. J. L.; Granroth, G. E.

2014-04-01

Recently an extended series of equally spaced vibrational modes was observed in uranium nitride (UN) by performing neutron spectroscopy measurements using the ARCS and SEQUOIA time-of-flight chopper spectrometers [A. A. Aczel et al., Nat. Commun. 3, 1124 (2012), 10.1038/ncomms2117]. These modes are well described by three-dimensional isotropic quantum harmonic oscillator (QHO) behavior of the nitrogen atoms, but there are additional contributions to the scattering that complicate the measured response. In an effort to better characterize the observed neutron scattering spectrum of UN, we have performed Monte Carlo ray tracing simulations of the ARCS and SEQUOIA experiments with various sample kernels, accounting for nitrogen QHO scattering, contributions that arise from the acoustic portion of the partial phonon density of states, and multiple scattering. These simulations demonstrate that the U and N motions can be treated independently, and show that multiple scattering contributes an approximate Q-independent background to the spectrum at the oscillator mode positions. Temperature-dependent studies of the lowest few oscillator modes have also been made with SEQUOIA, and our simulations indicate that the T dependence of the scattering from these modes is strongly influenced by the uranium lattice.

Demonstration of optically controlled data routing with the use of multiple-quantum-well bistable and electro-optical devices.

PubMed

Koppa, P; Chavel, P; Oudar, J L; Kuszelewicz, R; Schnell, J P; Pocholle, J P

1997-08-10

We present experimental results on a 1-to-64-channel free-space photonic switching demonstration system based on GaAs/GaAlAs multiple-quantum-well active device arrays. Two control schemes are demonstrated: data transparent optical self-routing usable in a packet-switching environment and direct optical control with potential signal amplification for circuit switching. The self-routing operation relies on the optical recognition of the binary destination address coded in each packet header. Address decoding is implemented with elementary optical bistable devices and modulator pixels as all-optical latches and electro-optical and gates, respectively. All 60 defect-free channels of the system could be operated one by one, but the simultaneous operation of only three channels could be achieved mainly because of the spatial nonhomogeneities of the devices. Direct-control operation is based on directly setting the bistable device reflectivity with a variable-control beam power. This working mode turned out to be much more tolerant of spatial noises: 37 channels of the system could be operated simultaneously. Further development of the system to a crossbar of N inputs and M outputs and system miniaturization are also considered.

Modeling and optimization of a double-well double-barrier GaN/AlGaN/GaN/AlGaN resonant tunneling diode

NASA Astrophysics Data System (ADS)

Liu, Yang; Gao, Bo; Gong, Min; Shi, Ruiying

2017-06-01

The influence of a GaN layer as a sub-quantum well for an AlGaN/GaN/AlGaN double barrier resonant tunneling diode (RTD) on device performance has been investigated by means of numerical simulation. The introduction of the GaN layer as the sub-quantum well turns the dominant transport mechanism of RTD from the 3D-2D model to the 2D-2D model and increases the energy difference between tunneling energy levels. It can also lower the effective height of the emitter barrier. Consequently, the peak current and peak-to-valley current difference of RTD have been increased. The optimal GaN sub-quantum well parameters are found through analyzing the electrical performance, energy band, and transmission coefficient of RTD with different widths and depths of the GaN sub-quantum well. The most pronounced electrical parameters, a peak current density of 5800 KA/cm2, a peak-to-valley current difference of 1.466 A, and a peak-to-valley current ratio of 6.35, could be achieved by designing RTD with the active region structure of GaN/Al0.2Ga0.8 N/GaN/Al0.2Ga0.8 N (3 nm/1.5 nm/1.5 nm/1.5 nm).

Direct measurement of discrete valley and orbital quantum numbers in bilayer graphene.

PubMed

Hunt, B M; Li, J I A; Zibrov, A A; Wang, L; Taniguchi, T; Watanabe, K; Hone, J; Dean, C R; Zaletel, M; Ashoori, R C; Young, A F

2017-10-16

The high magnetic field electronic structure of bilayer graphene is enhanced by the spin, valley isospin, and an accidental orbital degeneracy, leading to a complex phase diagram of broken symmetry states. Here, we present a technique for measuring the layer-resolved charge density, from which we directly determine the valley and orbital polarization within the zero energy Landau level. Layer polarization evolves in discrete steps across 32 electric field-tuned phase transitions between states of different valley, spin, and orbital order, including previously unobserved orbitally polarized states stabilized by skew interlayer hopping. We fit our data to a model that captures both single-particle and interaction-induced anisotropies, providing a complete picture of this correlated electron system. The resulting roadmap to symmetry breaking paves the way for deterministic engineering of fractional quantum Hall states, while our layer-resolved technique is readily extendable to other two-dimensional materials where layer polarization maps to the valley or spin quantum numbers.The phase diagram of bilayer graphene at high magnetic fields has been an outstanding question, with orders possibly between multiple internal quantum degrees of freedom. Here, Hunt et al. report the measurement of the valley and orbital order, allowing them to directly reconstruct the phase diagram.

The Influence of Geometrical Structure of AlInGaN Double Quantum Well (DQWs) UV Diode Laser on Its Performance and Operating Parameters

NASA Astrophysics Data System (ADS)

Ghazai, A. J.; Thahab, S. M.; Hassan, H. Abu; Hassan, Z.

2010-07-01

The development of efficient MQWs active regions of quaternary InAlGaN in the ultraviolet (UV) region is an engaging challenge by itself. Demonstrating lasers at such low wavelength will require resolving a number of materials, growth and device design issues. However, the quaternary AlInGaN represents a more versatile material since the bandgap and lattice constant can be independently varied. We report a quaternary AlInGaN double-quantum wells (DQWs) UV laser diode (LDs) study by using the simulation program of Integrated System Engineering-Technical Computer Aided Design (ISE TCAD). Advanced physical models of semiconductor properties were used. In this paper, the enhancement in the performance of AlInGaN laser diode can be achieved by optimizing the laser structure geometry design. The AlInGaN laser diodes operating parameters such as internal quantum efficiency ηi, internal loss αi and transparency threshold current density show effective improvements that contribute to a better performance.

First principles study of LiAlO2: new dense monoclinic phase under high pressure

NASA Astrophysics Data System (ADS)

Liu, Guangtao; Liu, Hanyu

2018-03-01

In this work, we have systematically explored the crystal structures of LiAlO2 at high pressures using crystal structure prediction method in combination with the density functional theory calculations. Besides the reported α, β, γ, δ and ɛ-phases, here we propose a new monoclinic ζ-LiAlO2 (C2/m) structure, which becomes thermodynamically and dynamically stable above 27 GPa. It is found that the cation coordination number increases from 4 to 6 under compression. Consisting of the compact {LiO6} and {AlO6} octahedrons, the newly-discovered ζ-phase possesses a very high density. Further electronic calculations show that LiAlO2 is still an insulator up to 60 GPa, and its bandgap increases upon compression. The present study advances our understanding on the crystal structures and high-pressure phase transitions of LiAlO2 that may trigger applications in multiple areas of industry and provoke more related basic science research.

InGaN/GaN blue light emitting diodes using Al-doped ZnO grown by atomic layer deposition as a current spreading layer

NASA Astrophysics Data System (ADS)

Kong, Bo Hyun; Cho, Hyung Koun; Kim, Mi Yang; Choi, Rak Jun; Kim, Bae Kyun

2011-07-01

For the fabrication of InGaN/GaN multiple quantum well-based blue light emitting diodes (LEDs) showing large area emission, transparent Al-doped ZnO (AZO) films grown by atomic layer deposition at relatively low temperatures were introduced as current spreading layers. These AZO films with an Al content of 3 at% showed a low electrical resistivity of <10 -3-10 -4 Ω cm, a high carrier concentration of >10 20 cm -3, and an excellent optical transmittance of ˜85%, in spite of the low growth temperature. The deposition of the AZO film induced an intense blue emission from the whole surface of the p-GaN and weak ultraviolet emission from the n-AZO and p-GaN junction. At an injection current of 50 mA, the output powers of the blue LEDs were 1760 and 1440 mcd for the samples with AZO thicknesses of 100 and 300 nm, respectively.

Multiple-state quantum Otto engine, 1D box system

DOE Office of Scientific and Technical Information (OSTI.GOV)

Latifah, E., E-mail: enylatifah@um.ac.id; Purwanto, A.

2014-03-24

Quantum heat engines produce work using quantum matter as their working substance. We studied adiabatic and isochoric processes and defined the general force according to quantum system. The processes and general force are used to evaluate a quantum Otto engine based on multiple-state of one dimensional box system and calculate the efficiency. As a result, the efficiency depends on the ratio of initial and final width of system under adiabatic processes.

A quantum network of clocks

NASA Astrophysics Data System (ADS)

Komar, Peter; Kessler, Eric; Bishof, Michael; Jiang, Liang; Sorensen, Anders; Ye, Jun; Lukin, Mikhail

2014-05-01

Shared timing information constitutes a key resource for positioning and navigation with a direct correspondence between timing accuracy and precision in applications such as the Global Positioning System (GPS). By combining precision metrology and quantum networks, we propose here a quantum, cooperative protocol for the operation of a network consisting of geographically remote optical atomic clocks. Using non-local entangled states, we demonstrate an optimal utilization of the global network resources, and show that such a network can be operated near the fundamental limit set by quantum theory yielding an ultra-precise clock signal. Furthermore, the internal structure of the network, combined with basic techniques from quantum communication, guarantees security both from internal and external threats. Realization of such a global quantum network of clocks may allow construction of a real-time single international time scale (world clock) with unprecedented stability and accuracy. See also: Komar et al. arXiv:1310.6045 (2013) and Kessler et al. arXiv:1310.6043 (2013).

Experimental quantum data locking

NASA Astrophysics Data System (ADS)

Liu, Yang; Cao, Zhu; Wu, Cheng; Fukuda, Daiji; You, Lixing; Zhong, Jiaqiang; Numata, Takayuki; Chen, Sijing; Zhang, Weijun; Shi, Sheng-Cai; Lu, Chao-Yang; Wang, Zhen; Ma, Xiongfeng; Fan, Jingyun; Zhang, Qiang; Pan, Jian-Wei

2016-08-01

Classical correlation can be locked via quantum means: quantum data locking. With a short secret key, one can lock an exponentially large amount of information in order to make it inaccessible to unauthorized users without the key. Quantum data locking presents a resource-efficient alternative to one-time pad encryption which requires a key no shorter than the message. We report experimental demonstrations of a quantum data locking scheme originally proposed by D. P. DiVincenzo et al. [Phys. Rev. Lett. 92, 067902 (2004), 10.1103/PhysRevLett.92.067902] and a loss-tolerant scheme developed by O. Fawzi et al. [J. ACM 60, 44 (2013), 10.1145/2518131]. We observe that the unlocked amount of information is larger than the key size in both experiments, exhibiting strong violation of the incremental proportionality property of classical information theory. As an application example, we show the successful transmission of a photo over a lossy channel with quantum data (un)locking and error correction.

Ultrafast Photodetection in the Quantum Wells of Single AlGaAs/GaAs-Based Nanowires.

PubMed

Erhard, N; Zenger, S; Morkötter, S; Rudolph, D; Weiss, M; Krenner, H J; Karl, H; Abstreiter, G; Finley, J J; Koblmüller, G; Holleitner, A W

2015-10-14

We investigate the ultrafast optoelectronic properties of single Al0.3Ga0.7As/GaAs core-shell nanowires. The nanowires contain GaAs-based quantum wells. For a resonant excitation of the quantum wells, we find a picosecond photocurrent which is consistent with an ultrafast lateral expansion of the photogenerated charge carriers. This Dember-effect does not occur for an excitation of the GaAs-based core of the nanowires. Instead, the core exhibits an ultrafast displacement current and a photothermoelectric current at the metal Schottky contacts. Our results uncover the optoelectronic dynamics in semiconductor core-shell nanowires comprising quantum wells, and they demonstrate the possibility to use the low-dimensional quantum well states therein for ultrafast photoswitches and photodetectors.

InGaP Heterojunction Barrier Solar Cells

NASA Technical Reports Server (NTRS)

Welser, Roger E.

2010-01-01

A new solar-cell structure utilizes a single, ultra-wide well of either gallium arsenide (GaAs) or indium-gallium-phosphide (InGaP) in the depletion region of a wide bandgap matrix, instead of the usual multiple quantum well layers. These InGaP barrier layers are effective at reducing diode dark current, and photogenerated carrier escape is maximized by the proper design of the electric field and barrier profile. With the new material, open-circuit voltage enhancements of 40 and 100 mV (versus PIN control systems) are possible without any degradation in short-circuit current. Basic tenets of quantum-well and quantum- dot solar cells are utilized, but instead of using multiple thin layers, a single wide well works better. InGaP is used as a barrier material, which increases open current, while simultaneously lowering dark current, reducing both hole diffusion from the base, and space charge recombination within the depletion region. Both the built-in field and the barrier profile are tailored to enhance thermionic emissions, which maximizes the photocurrent at forward bias, with a demonstrated voltage increase. An InGaP heterojunction barrier solar cell consists of a single, ultra-wide GaAs, aluminum-gallium-arsenide (AlGaAs), or lower-energy-gap InGaP absorber well placed within the depletion region of an otherwise wide bandgap PIN diode. Photogenerated electron collection is unencumbered in this structure. InGaAs wells can be added to the thick GaAs absorber layer to capture lower-energy photons.

Theory of terahertz intervalence band polaritons and antipolaritons

NASA Astrophysics Data System (ADS)

Faragai, Inuwa Aliyu

The work presented in this thesis is a theoretical investigation of the interaction of terahertz (THz) radiation with intersubband excitations in microcavities leading to THz polaritons and antipolaritons. The approach is based on the dielectric function formalism. The dielectric constant is derived from an optical susceptibility evaluated with Non Equilibrium Many Body Green's Functions (NEGF), which is then adjusted to a Lorentzian fit. Finally, the resulting expression is included in the wave equation describing the propagating electric field in the medium. This model is applied to GaAs/Al[0.3]Ga[0.7]As multiple quantum wells embedded in a microcavity. The energy dispersion relations leading to THz polaritons and antipolaritons are obtained and investigated for different carrier densities and cavity configurations. Recently, intersubband based THz polariton emitters and THz quantum cascade lasers are attracting major research interest due to their great importance in applications such as THz imaging, spectroscopy as well as in security control for detection of biological and hazardous materials and medical diagnosis. The coupling of THz radiation with intersubband transitions in semiconductor microcavities can lead to further tunability and improved quantum efficiency for THz devices. Here we propose a simple geometry and used a simplified modelling technique to investigate the interactions of transverse electric (TE-Mode) polarized THz cavity modes with intervalence band excitations. The model is applied to single and multiple transition problems and combinations of many body effects and scattering mechanism are included in the input dielectric constant.

Aluminium content of foods originating from aluminium-containing food additives.

PubMed

Ogimoto, Mami; Suzuki, Kumi; Haneishi, Nahoko; Kikuchi, Yuu; Takanashi, Mayu; Tomioka, Naoko; Uematsu, Yoko; Monma, Kimio

2016-09-01

Aluminium (Al) levels of 90 food samples were investigated. Nineteen samples contained Al levels exceeding the tolerable weekly intake (TWI) for young children [body weight (bw): 16 kg] when consuming two servings/week. These samples were purchased multiple times at specific intervals and were evaluated for Al levels. Al was detected in 27 of the 90 samples at levels ranging from 0.01 (limit of quantitation) to 1.06 mg/g. Of these, the Al intake levels in two samples (cookie and scone mix, 1.3 and 2 mg/kg bw/week, respectively) exceeded the TWI as established by European Food Safety Authority, although the level in the scone mix was equivalent to the provisional TWI (PTWI) as established by Joint Food and Agriculture Organization of the United Nations/World Health Organization Expert Committee on Food Additives. The Al levels markedly decreased in 14 of the 19 samples with initially high Al levels. These results indicated reductions in the Al levels to below the PTWI limits in all but two previously identified food samples.

Cryogenic operation of pseudomorphic AlGaAs/InGaAs single-quantum-well MODFETs

NASA Technical Reports Server (NTRS)

Masselink, W. T.; Ketterson, A.; Klem, J.; Kopp, W.; Morkoc, H.

1985-01-01

The 77 K operation of AlGaAs/InGaAs MODFETs has been investigated. The structures, grown by MBE, make use of a 200 A undoped In(0.15)Ga(0.85)As quantum well for electron confinement and an Si-doped Al(0.15)Ga(0.85)As top barrier. The MODFETs with 1 micron gate lengths exhibit extrinsic transconductances of 360 mS/mm and maximum currents of 310 mA/mm at 77 K. The use of a low Al mole fraction AlGaAs/InGaAs heterojunction makes it possible to avoid the persistent trapping effects encountered in AlGaAs/GaAs MODFETs without sacrificing device performance.

Quantum molecular dynamics simulation of structural and thermodynamic properties of NiAl

NASA Astrophysics Data System (ADS)

Karchevskaya, E. S.; Minakov, D. V.; Levashov, P. R.

2018-01-01

In this work, structural and thermodynamic properties of a solid and liquid Ni-Al compound are studied using an ab initio method of quantum molecular dynamics (QMD). Simulations were carried out in 700-3000 K temperature range at atmospheric pressure. Radial distribution functions are analyzed to determine the presence of Ni-Al chemical bonds. Diffusion coefficients for individual components are also calculated. Another goal of this work is the investigation of the reaction propagation in thermally-initiated Ni-Al foils. For this purpose, we performed QMD simulations of Ni-Al layers in the microcanonical ensemble. An exothermic reaction between the solid Ni-Al layers is observed in our simulations at temperature less than the melting temperatures of the components.

Enhancement of emission efficiency of colloidal CdSe quantum dots on silicon substrate via an ultra-thin layer of aluminum oxide.

PubMed

Patty, K; Sadeghi, S M; Nejat, A; Mao, C-B

2014-04-18

We demonstrate that an ultra-thin layer of aluminum oxide can significantly enhance the emission efficiency of colloidal quantum dots on a Si substrate. For an ensemble of single quantum dots, our results show that this super brightening process can increase the fluorescence of CdSe quantum dots, forming well-resolved spectra, while in the absence of this layer the emission remains mostly at the noise level. We demonstrate that this process can be further enhanced with irradiation of the quantum dots, suggesting a significant photo-induced fluorescence enhancement via considerable suppression of non-radiative decay channels of the quantum dots. We study the impact of the Al oxide thickness on Si and interdot interactions, and discuss the results in terms of photo-induced catalytic properties of the Al oxide and the effects of such an oxide on the Coulomb blockade responsible for suppression of photo-ionization of the quantum dots.

Coherent Frequency Shifter, Optical Isolator, Lasers on an Integrated Platform for Cold Atom Microsystems

DTIC Science & Technology

2017-10-11

power operation of optical frequency shifter; (7) a new design and theoretical analysis of frequency shifter with larger electro-optical coefficients...integrated laser. 15. SUBJECT TERMS coherent frequency shifter, optical isolation, integrated photonics, 780nm laser design and fabrication 16...coefficient (r33 and r42) ………………………………………………………………… 20 II.3. 780 nm Laser design , fabrication, and testing based on AlGaAs/GaAs Multiple Quantum Wells

Characterizations of SiN and AlN microfabricated waveguides for evanescent-field atom-trap applications

NASA Astrophysics Data System (ADS)

Lee, Jongmin; Eichenfield, Matt; Douglas, Erica; Mudrick, John; Biedermann, Grant; Jau, Yuan-Yu

2017-04-01

Trapping neutral atoms in the evanescent fields generated by microfabricated nano-waveguides will provide a new platform for neutral atom quantum controls via strong atom-photon interactions. At Sandia National Labs, we are aiming at developing the related technology that can enable the efficient optical coupling to the waveguide at multiple wavelengths, fabrication nano-waveguides to handle required optical power, more robust waveguide structure, and the new fabrication geometry to facilitate the cold-atom experiments. We will report our latest results on the related subjects. Sandia National Laboratories, Albuquerque, New Mexico 87185, USA.

27Al-NMR studies of the structural phase transition in LaPd2Al2

NASA Astrophysics Data System (ADS)

Aoyama, Taisuke; Kobayashi, Fumiaki; Kotegawa, Hisashi; Tou, Hideki; Doležal, Petr; Kriegner, Dominik; Javorský, Pavel; Uhlířová, Klára

2018-05-01

We performed 27Al-NMR measurements for the CaBe2Ge2 type single crystalline LaPd2Al2 in the temperature range from 100 K to 5 K to investigate the origin of the structural phase transition. We found that the line profile of the 27Al-NMR spectrum does not change entirely on passing through the structural phase transition at Tst. Meanwhile, the peak position of the central line slightly change (≈ 30 ppm) below 70 K, suggesting the orbital shift changes below Tst. The present 27Al-NMR studies evidence that the local electronic state at Al site is hardly affected by the structural phase transition.

Spin and Magnetism: Two Transfer Matrix Formulations of a Classical Heisenberg Ring in a Magnetic Field.

DTIC Science & Technology

1998-06-01

determination of the partition function could be attempted. According to Gatteschi et al, however, [Ref. 15] when commenting on the quantum mechanical...1995 15. Gatteschi , D. et al, "Large Clusters of Metal Ions: The Transition from Molecular to Bulk Magnets" Science vol. 265, pp. 1054-1058, August... Gatteschi , D. et al, "Spin Dynamics in Mesoscopic Size Magnetic Systems... ", Phys. Rev. B, vol. 55, no. 21, 01 June, 1997 18. Tejeda, J. etal, "Quantum

Low-threshold voltage ultraviolet light-emitting diodes based on (Al,Ga)N metal-insulator-semiconductor structures

NASA Astrophysics Data System (ADS)

Liang, Yu-Han; Towe, Elias

2017-12-01

Al-rich III-nitride-based deep-ultraviolet (UV) (275-320 nm) light-emitting diodes are plagued with a low emission efficiency and high turn-on voltages. We report Al-rich (Al,Ga)N metal-insulator-semiconductor UV light-emitting Schottky diodes with low turn-on voltages of <3 V, which are about half those of typical (Al,Ga)N p-i-n diodes. Our devices use a thin AlN film as the insulator and an n-type Al0.58Ga0.42N film as the semiconductor. To improve the efficiency, we inserted a GaN quantum-well structure between the AlN insulator and the n-type Al x Ga1- x N semiconductor. The benefits of the quantum-well structure include the potential to tune the emission wavelength and the capability to confine carriers for more efficient radiative recombination.

An efficient quantum circuit analyser on qubits and qudits

NASA Astrophysics Data System (ADS)

Loke, T.; Wang, J. B.

2011-10-01

This paper presents a highly efficient decomposition scheme and its associated Mathematica notebook for the analysis of complicated quantum circuits comprised of single/multiple qubit and qudit quantum gates. In particular, this scheme reduces the evaluation of multiple unitary gate operations with many conditionals to just two matrix additions, regardless of the number of conditionals or gate dimensions. This improves significantly the capability of a quantum circuit analyser implemented in a classical computer. This is also the first efficient quantum circuit analyser to include qudit quantum logic gates.

Extended long-wavelength lambda = 11-15-micron GaAs/Al(x)Ga(1-x)As quantum-well infrared photodetectors

NASA Technical Reports Server (NTRS)

Zussman, A.; Levine, B. F.; Kuo, J. M.; De Jong, J.

1991-01-01

Success has been achieved in extending the spectral wavelength of GaAs/Al(x)Ga(1-x)As quantum-well infrared photodetectors to significantly longer wavelengths of 11-15 micron. High responsivity of 0.5 A/W, high quantum efficiency of 12 percent, and high detectivity as well as an excellent noise equivalent temperature difference of 4 mK have been achieved at T = 50 K. High performance of 19 mK has also been achieved at an even higher temperature of 60 K.

Quantum stochastic thermodynamic on harmonic networks

DOE PAGES

Deffner, Sebastian

2016-01-04

Fluctuation theorems are symmetry relations for the probability to observe an amount of entropy production in a finite-time process. In a recent paper Pigeon et al (2016 New. J. Phys. 18 013009) derived fluctuation theorems for harmonic networks by means of the large deviation theory. Furthermore, their novel approach is illustrated with various examples of experimentally relevant systems. As a main result, however, Pigeon et al provide new insight how to consistently formulate quantum stochastic thermodynamics, and provide new and robust tools for the study of the thermodynamics of quantum harmonic networks.

Infrared Focal Plane Arrays Based on Semiconductor Quantum Dots

DTIC Science & Technology

2002-01-01

an ensemble of self -assembled InAs/GaAs or InAs/InP quantum dots (QDs) are typically in the range of 10-30 monolayers [1]. Here, we report on InAs...photoconductive properties of QDIPs based on self organized InAs quantum dots grown on In.52Al.48As/InP(100), using the MBE technique. Dr. Gendry grew the...composed of 10 layers of self assembled InAs dots, separated by 500 Å thick InAlAs (lattice matched to the semi-insulating InP substrate) barrier

Quantum stochastic thermodynamic on harmonic networks

DOE Office of Scientific and Technical Information (OSTI.GOV)

Deffner, Sebastian

Fluctuation theorems are symmetry relations for the probability to observe an amount of entropy production in a finite-time process. In a recent paper Pigeon et al (2016 New. J. Phys. 18 013009) derived fluctuation theorems for harmonic networks by means of the large deviation theory. Furthermore, their novel approach is illustrated with various examples of experimentally relevant systems. As a main result, however, Pigeon et al provide new insight how to consistently formulate quantum stochastic thermodynamics, and provide new and robust tools for the study of the thermodynamics of quantum harmonic networks.

Modulation of intersubband light absorption and interband photoluminescence in double GaAs/AlGaAs quantum wells under strong lateral electric fields

DOE Office of Scientific and Technical Information (OSTI.GOV)

Balagula, R. M., E-mail: rmbal@spbstu.ru; Vinnichenko, M. Ya., E-mail: mvin@spbstu.ru; Makhov, I. S.

The effect of a lateral electric field on the mid-infrared absorption and interband photoluminescence spectra in double tunnel-coupled GaAs/AlGaAs quantum wells is studied. The results obtained are explained by the redistribution of hot electrons between quantum wells and changes in the space charge in the structure. The hot carrier temperature is determined by analyzing the intersubband light absorption and interband photoluminescence modulation spectra under strong lateral electric fields.

Strained GaSb/AlAsSb Quantum Wells for p-Channel Field-Effect Transistors

DTIC Science & Technology

2008-01-01

Available online 18 October 2008 PACS: 72.80.Ey 73.61.Ey 81.05.Ea 85.30.Tv Keywords: A3. Molecular beam epitaxy A3. Quantum wells B2. Semiconducting III–V...were grown by molecular beam epitaxy on GaAs substrates. The buffer layer and barrier layers consisted of relaxed AlAsxSb1x. The composition of the...composition in order to control the strain in the GaSb quantum well. The heterostructures studied here are grown by molecular beam epitaxy (MBE) on semi

Coherent quantum dynamics launched by incoherent relaxation in a quantum circuit simulator of a light-harvesting complex

NASA Astrophysics Data System (ADS)

Chin, A. W.; Mangaud, E.; Atabek, O.; Desouter-Lecomte, M.

2018-06-01

Engineering and harnessing coherent excitonic transport in organic nanostructures has recently been suggested as a promising way towards improving manmade light-harvesting materials. However, realizing and testing the dissipative system-environment models underlying these proposals is presently very challenging in supramolecular materials. A promising alternative is to use simpler and highly tunable "quantum simulators" built from programmable qubits, as recently achieved in a superconducting circuit by Potočnik et al. [A. Potočnik et al., Nat. Commun. 9, 904 (2018), 10.1038/s41467-018-03312-x]. We simulate the real-time dynamics of an exciton coupled to a quantum bath as it moves through a network based on the quantum circuit of Potočnik et al. Using the numerically exact hierarchical equations of motion to capture the open quantum system dynamics, we find that an ultrafast but completely incoherent relaxation from a high-lying "bright" exciton into a doublet of closely spaced "dark" excitons can spontaneously generate electronic coherences and oscillatory real-space motion across the network (quantum beats). Importantly, we show that this behavior also survives when the environmental noise is classically stochastic (effectively high temperature), as in present experiments. These predictions highlight the possibilities of designing matched electronic and spectral noise structures for robust coherence generation that do not require coherent excitation or cold environments.

Effects of HfO2/Al2O3 gate stacks on electrical performance of planar In x Ga1- x As tunneling field-effect transistors

NASA Astrophysics Data System (ADS)

Ahn, Dae-Hwan; Yoon, Sang-Hee; Takenaka, Mitsuru; Takagi, Shinichi

2017-08-01

We study the impact of gate stacks on the electrical characteristics of Zn-diffused source In x Ga1- x As tunneling field-effect transistors (TFETs) with Al2O3 or HfO2/Al2O3 gate insulators. Ta and W gate electrodes are compared in terms of the interface trap density (D it) of InGaAs MOS interfaces. It is found that D it is lower at the W/HfO2/Al2O3 InGaAs MOS interface than at the Ta/HfO2/Al2O3 interface. The In0.53Ga0.47As TFET with a W/HfO2 (2.7 nm)/Al2O3 (0.3 nm) gate stack of 1.4-nm-thick capacitance equivalent thickness (CET) has a steep minimum subthreshold swing (SS) of 57 mV/dec, which is attributed to the thin CET and low D it. Also, the In0.53Ga0.47As (2.6 nm)/In0.67Ga0.33As (3.2 nm)/In0.53Ga0.47As (96.5 nm) quantum-well (QW) TFET supplemented with this 1.4-nm-thick CET gate stack exhibits a steeper minimum SS of 54 mV/dec and a higher on-current (I on) than those of the In0.53Ga0.47As TFET.

Critical side channel effects in random bit generation with multiple semiconductor lasers in a polarization-based quantum key distribution system.

PubMed

Ko, Heasin; Choi, Byung-Seok; Choe, Joong-Seon; Kim, Kap-Joong; Kim, Jong-Hoi; Youn, Chun Ju

2017-08-21

Most polarization-based BB84 quantum key distribution (QKD) systems utilize multiple lasers to generate one of four polarization quantum states randomly. However, random bit generation with multiple lasers can potentially open critical side channels that significantly endangers the security of QKD systems. In this paper, we show unnoticed side channels of temporal disparity and intensity fluctuation, which possibly exist in the operation of multiple semiconductor laser diodes. Experimental results show that the side channels can enormously degrade security performance of QKD systems. An important system issue for the improvement of quantum bit error rate (QBER) related with laser driving condition is further addressed with experimental results.

Time of arrival in quantum and Bohmian mechanics

NASA Astrophysics Data System (ADS)

Leavens, C. R.

1998-08-01

In a recent paper Grot, Rovelli, and Tate (GRT) [Phys. Rev. A 54, 4676 (1996)] derived an expression for the probability distribution π(TX) of intrinsic arrival times T(X) at position x=X for a quantum particle with initial wave function ψ(x,t=0) freely evolving in one dimension. This was done by quantizing the classical expression for the time of arrival of a free particle at X, assuming a particular choice of operator ordering, and then regulating the resulting time of arrival operator. For the special case of a minimum-uncertainty-product wave packet at t=0 with average wave number and variance Δk they showed that their analytical expression for π(TX) agreed with the probability current density J(x=X,t=T) only to terms of order Δk/. They dismissed the probability current density as a viable candidate for the exact arrival time distribution on the grounds that it can sometimes be negative. This fact is not a problem within Bohmian mechanics where the arrival time distribution for a particle, either free or in the presence of a potential, is rigorously given by \\|J(X,T)\\| (suitably normalized) [W. R. McKinnon and C. R. Leavens, Phys. Rev. A 51, 2748 (1995); C. R. Leavens, Phys. Lett. A 178, 27 (1993); M. Daumer et al., in On Three Levels: The Mathematical Physics of Micro-, Meso-, and Macro-Approaches to Physics, edited by M. Fannes et al. (Plenum, New York, 1994); M. Daumer, in Bohmian Mechanics and Quantum Theory: An Appraisal, edited by J. T. Cushing et al. (Kluwer Academic, Dordrecht, 1996)]. The two theories are compared in this paper and a case presented for which the results could not differ more: According to GRT's theory, every particle in the ensemble reaches a point x=X, where ψ(x,t) and J(x,t) are both zero for all t, while no particle ever reaches X according to the theory based on Bohmian mechanics. Some possible implications are discussed.

Interfacing external quantum devices to a universal quantum computer.

PubMed

Lagana, Antonio A; Lohe, Max A; von Smekal, Lorenz

2011-01-01

We present a scheme to use external quantum devices using the universal quantum computer previously constructed. We thereby show how the universal quantum computer can utilize networked quantum information resources to carry out local computations. Such information may come from specialized quantum devices or even from remote universal quantum computers. We show how to accomplish this by devising universal quantum computer programs that implement well known oracle based quantum algorithms, namely the Deutsch, Deutsch-Jozsa, and the Grover algorithms using external black-box quantum oracle devices. In the process, we demonstrate a method to map existing quantum algorithms onto the universal quantum computer. © 2011 Lagana et al.

Representations of the Extended Poincare Superalgebras in Four Dimensions

NASA Astrophysics Data System (ADS)

Griffis, John D.

Eugene Wigner used the Poincare group to induce representations from the fundamental internal space-time symmetries of (special) relativistic quantum particles. Wigner's students spent considerable amount of time translating passages of this paper into more detailed and accessible papers and books. In 1975, R. Haag et al. investigated the possible extensions of the symmetries of relativistic quantum particles. They showed that the only consistent (super)symmetric extensions to the standard model of physics are obtained by using super charges to generate the odd part of a Lie superalgebra whose even part is generated by the Poincare group; this theory has become known as supersymmetry. In this paper, R. Haag et al. used a notation called supermultiplets to give the dimension of a representation and its multiplicity; this notation is described mathematically in chapter 5 of this thesis. By 1980 S. Ferrara et al. began classifying the representations of these algebras for dimensions greater than four, and in 1986 Strathdee published considerable work listing some representations for the Poincare superalgebra in any finite dimension. This work has been continued to date. We found the work of S. Ferrara et al. to be essential to our understanding extended supersymmetries. However, this paper was written using imprecise language meant for physicists, so it was far from trivial to understand the mathematical interpretation of this work. In this thesis, we provide a "translation" of the previous results (along with some other literature on the Extended Poincare Superalgebras) into a rigorous mathematical setting, which makes the subject more accessible to a larger audience. Having a mathematical model allows us to give explicit results and detailed proofs. Further, this model allows us to see beyond just the physical interpretation and it allows investigation by a purely mathematically adept audience. Our work was motivated by a paper written in 2012 by M. Chaichian et al, which classified all of the unitary, irreducible representations of the extended Poincare superalgebra in three dimensions. We consider only the four dimensional case, which is of interest to physicists working on quantum supergravity models without cosmological constant, and we provide explicit branching rules for the invariant subgroups corresponding to the most physically relevant symmetries of the irreducible representations of the Extended Poincare Superalgebra in four dimensions. However, it is possible to further generalize this work into any finite dimension. Such work would classify all possible finitely extended supersymmetric models.

Excitation Function of the Reaction Al$sup 27$(d,p)Al$sup 28$ from 2.2 to 12.6 Mev. Report No. 65; FUNCION DE EXCITACION DE LA REACCION AL$sup 27$(d,p)Al$sup 28$ ENTRE 2,2 Y 12,6 Mev. INFORME NO. 65

DOE Office of Scientific and Technical Information (OSTI.GOV)

Flores, J.M.

1962-01-01

The excitation function is measured for the reaction Al/sup 27/(d,p)Al/ sup 28/ between 2.2 and 12.6 Mev. The calibration of the excitation function in absolute form is carried out by measuring simultaneously the excitation function of the reactions Al/sup 27/(d,p) and (d, alpha p) and comparing the results obtained with those of Batzel et al. The maximum of the function is between 7 and 8 Mev, and is 239 plus or minus 29 mb. The half life of Al/sup 28/ was determined as 2.28 plus or minus 0.06 min. (tr-auth)

Quantum theory of multiple-input-multiple-output Markovian feedback with diffusive measurements

DOE Office of Scientific and Technical Information (OSTI.GOV)

Chia, A.; Wiseman, H. M.

2011-07-15

Feedback control engineers have been interested in multiple-input-multiple-output (MIMO) extensions of single-input-single-output (SISO) results of various kinds due to its rich mathematical structure and practical applications. An outstanding problem in quantum feedback control is the extension of the SISO theory of Markovian feedback by Wiseman and Milburn [Phys. Rev. Lett. 70, 548 (1993)] to multiple inputs and multiple outputs. Here we generalize the SISO homodyne-mediated feedback theory to allow for multiple inputs, multiple outputs, and arbitrary diffusive quantum measurements. We thus obtain a MIMO framework which resembles the SISO theory and whose additional mathematical structure is highlighted by the extensivemore » use of vector-operator algebra.« less

Multiple-exciton generation in lead selenide nanorod solar cells with external quantum efficiencies exceeding 120%

PubMed Central

Davis, Nathaniel J. L. K.; Böhm, Marcus L.; Tabachnyk, Maxim; Wisnivesky-Rocca-Rivarola, Florencia; Jellicoe, Tom C.; Ducati, Caterina; Ehrler, Bruno; Greenham, Neil C.

2015-01-01

Multiple-exciton generation—a process in which multiple charge-carrier pairs are generated from a single optical excitation—is a promising way to improve the photocurrent in photovoltaic devices and offers the potential to break the Shockley–Queisser limit. One-dimensional nanostructures, for example nanorods, have been shown spectroscopically to display increased multiple exciton generation efficiencies compared with their zero-dimensional analogues. Here we present solar cells fabricated from PbSe nanorods of three different bandgaps. All three devices showed external quantum efficiencies exceeding 100% and we report a maximum external quantum efficiency of 122% for cells consisting of the smallest bandgap nanorods. We estimate internal quantum efficiencies to exceed 150% at relatively low energies compared with other multiple exciton generation systems, and this demonstrates the potential for substantial improvements in device performance due to multiple exciton generation. PMID:26411283

A New Improving Quantum Secret Sharing Scheme

NASA Astrophysics Data System (ADS)

Xu, Ting-Ting; Li, Zhi-Hui; Bai, Chen-Ming; Ma, Min

2017-04-01

An improving quantum secret sharing scheme (IQSS scheme) was introduced by Nascimento et al. (Phys. Rev. A 64, 042311 (2001)), which was analyzed by the improved quantum access structure. In this paper, we propose a new improving quantum secret sharing scheme, and more quantum access structures can be realized by this scheme than the previous one. For example, we prove that any threshold and hypercycle quantum access structures can be realized by the new scheme.

Open-Source Software for Modeling of Nanoelectronic Devices

NASA Technical Reports Server (NTRS)

Oyafuso, Fabiano; Hua, Hook; Tisdale, Edwin; Hart, Don

2004-01-01

The Nanoelectronic Modeling 3-D (NEMO 3-D) computer program has been upgraded to open-source status through elimination of license-restricted components. The present version functions equivalently to the version reported in "Software for Numerical Modeling of Nanoelectronic Devices" (NPO-30520), NASA Tech Briefs, Vol. 27, No. 11 (November 2003), page 37. To recapitulate: NEMO 3-D performs numerical modeling of the electronic transport and structural properties of a semiconductor device that has overall dimensions of the order of tens of nanometers. The underlying mathematical model represents the quantum-mechanical behavior of the device resolved to the atomistic level of granularity. NEMO 3-D solves the applicable quantum matrix equation on a Beowulf-class cluster computer by use of a parallel-processing matrix vector multiplication algorithm coupled to a Lanczos and/or Rayleigh-Ritz algorithm that solves for eigenvalues. A prior upgrade of NEMO 3-D incorporated a capability for a strain treatment, parameterized for bulk material properties of GaAs and InAs, for two tight-binding submodels. NEMO 3-D has been demonstrated in atomistic analyses of effects of disorder in alloys and, in particular, in bulk In(x)Ga(1-x)As and in In(0.6)Ga(0.4)As quantum dots.

Biological Information Processing in Single Microtubules

DTIC Science & Technology

2014-03-05

single Microtubule Google Mountain view campus, workshop on quantum biology 22 October 2010 3. Paul Davies Beyond Center at Arizona State University...Phoenix) Phoenix, workshop on quantum biology and cancer research, Experimental studies on single microtubule, 25-27 October 2010, Tempe, Arizona...State University, USA 4. Quantum aspects of microtubule: Direct experimental evidence for the existence of quantum states in microtubule, Towards a

Improving hole injection and carrier distribution in InGaN light-emitting diodes by removing the electron blocking layer and including a unique last quantum barrier

DOE Office of Scientific and Technical Information (OSTI.GOV)

Cheng, Liwen, E-mail: lwcheng@yzu.edu.cn; Chen, Haitao; Wu, Shudong

2015-08-28

The effects of removing the AlGaN electron blocking layer (EBL), and using a last quantum barrier (LQB) with a unique design in conventional blue InGaN light-emitting diodes (LEDs), were investigated through simulations. Compared with the conventional LED design that contained a GaN LQB and an AlGaN EBL, the LED that contained an AlGaN LQB with a graded-composition and no EBL exhibited enhanced optical performance and less efficiency droop. This effect was caused by an enhanced electron confinement and hole injection efficiency. Furthermore, when the AlGaN LQB was replaced with a triangular graded-composition, the performance improved further and the efficiency droopmore » was lowered. The simulation results indicated that the enhanced hole injection efficiency and uniform distribution of carriers observed in the quantum wells were caused by the smoothing and thinning of the potential barrier for the holes. This allowed a greater number of holes to tunnel into the quantum wells from the p-type regions in the proposed LED structure.« less

Storage of multiple single-photon pulses emitted from a quantum dot in a solid-state quantum memory.

PubMed

Tang, Jian-Shun; Zhou, Zong-Quan; Wang, Yi-Tao; Li, Yu-Long; Liu, Xiao; Hua, Yi-Lin; Zou, Yang; Wang, Shuang; He, De-Yong; Chen, Geng; Sun, Yong-Nan; Yu, Ying; Li, Mi-Feng; Zha, Guo-Wei; Ni, Hai-Qiao; Niu, Zhi-Chuan; Li, Chuan-Feng; Guo, Guang-Can

2015-10-15

Quantum repeaters are critical components for distributing entanglement over long distances in presence of unavoidable optical losses during transmission. Stimulated by the Duan-Lukin-Cirac-Zoller protocol, many improved quantum repeater protocols based on quantum memories have been proposed, which commonly focus on the entanglement-distribution rate. Among these protocols, the elimination of multiple photons (or multiple photon-pairs) and the use of multimode quantum memory are demonstrated to have the ability to greatly improve the entanglement-distribution rate. Here, we demonstrate the storage of deterministic single photons emitted from a quantum dot in a polarization-maintaining solid-state quantum memory; in addition, multi-temporal-mode memory with 1, 20 and 100 narrow single-photon pulses is also demonstrated. Multi-photons are eliminated, and only one photon at most is contained in each pulse. Moreover, the solid-state properties of both sub-systems make this configuration more stable and easier to be scalable. Our work will be helpful in the construction of efficient quantum repeaters based on all-solid-state devices.

Storage of multiple single-photon pulses emitted from a quantum dot in a solid-state quantum memory

PubMed Central

Tang, Jian-Shun; Zhou, Zong-Quan; Wang, Yi-Tao; Li, Yu-Long; Liu, Xiao; Hua, Yi-Lin; Zou, Yang; Wang, Shuang; He, De-Yong; Chen, Geng; Sun, Yong-Nan; Yu, Ying; Li, Mi-Feng; Zha, Guo-Wei; Ni, Hai-Qiao; Niu, Zhi-Chuan; Li, Chuan-Feng; Guo, Guang-Can

2015-01-01

Quantum repeaters are critical components for distributing entanglement over long distances in presence of unavoidable optical losses during transmission. Stimulated by the Duan–Lukin–Cirac–Zoller protocol, many improved quantum repeater protocols based on quantum memories have been proposed, which commonly focus on the entanglement-distribution rate. Among these protocols, the elimination of multiple photons (or multiple photon-pairs) and the use of multimode quantum memory are demonstrated to have the ability to greatly improve the entanglement-distribution rate. Here, we demonstrate the storage of deterministic single photons emitted from a quantum dot in a polarization-maintaining solid-state quantum memory; in addition, multi-temporal-mode memory with 1, 20 and 100 narrow single-photon pulses is also demonstrated. Multi-photons are eliminated, and only one photon at most is contained in each pulse. Moreover, the solid-state properties of both sub-systems make this configuration more stable and easier to be scalable. Our work will be helpful in the construction of efficient quantum repeaters based on all-solid-state devices. PMID:26468996

Probing the atomic structure of basaltic melts generated by partial melting of upper mantle peridotite (KLB-1): Insights from high-resolution solid-state NMR study

NASA Astrophysics Data System (ADS)

Park, S. Y.; Lee, S. K.

2015-12-01

Probing the structural disorder in multi-component silicate glasses and melts with varying composition is essential to reveal the change of macroscopic properties in natural silicate melts. While a number of NMR studies for the structure of multi-component silicate glasses and melts including basaltic and andesitic glasses have been reported (e.g., Park and Lee, Geochim. Cosmochim. Acta, 2012, 80, 125; Park and Lee, Geochim. Cosmochim. Acta, 2014, 26, 42), many challenges still remain. The composition of multi-component basaltic melts vary with temperature, pressure, and melt fraction (Kushiro, Annu. Rev. Earth Planet. Sci., 2001, 71, 107). Especially, the eutectic point (the composition of first melt) of nepheline-forsterite-quartz (the simplest model of basaltic melts) moves with pressure from silica-saturated to highly undersaturated and alkaline melts. The composition of basaltic melts generated by partial melting of upper mantle peridotite (KLB-1, the xenolith from Kilbourne Hole) also vary with pressure. In this study we report experimental results for the effects of composition on the atomic structure of Na2O-MgO-Al2O3-SiO2 (NMAS) glasses in nepheline (NaAlSiO4)-forsterite (Mg2SiO4)-quartz (SiO2) eutectic composition and basaltic glasses generated by partial melting of upper mantle peridotite (KLB-1) using high-resolution multi-nuclear solid-state NMR. The Al-27 3QMAS (triple quantum magic angle spinning) NMR spectra of NMAS glasses in nepheline-forsterite-quartz eutectic composition show only [4]Al. The Al-27 3QMAS NMR spectra of KLB-1 basaltic glasses show mostly [4]Al and a non-negligible fraction of [5]Al. The fraction of [5]Al, the degree of configurational disorder, increases from 0 at XMgO [MgO/(MgO+Al2O3)]=0.55 to ~3% at XMgO=0.79 in KLB-1 basaltic glasses while only [4]Al are observed in nepheline-forsterite-quartz eutectic composition. The current experimental results provide that the fraction of [5]Al abruptly increases by the effect of composition as well as pressure in natural silicate melts. The changes of the fraction of highly coordinated Al in multi-component silicate glasses and melts with composition can provide insight into the changes of macroscopic properties (e.g., entropy, viscosity, and diffusivity) with varying composition of melt.

Image simulations of quantum dots.

DOE Office of Scientific and Technical Information (OSTI.GOV)

Lang, C.; Liao, Xiaozhou; Cockayne, D. J.

2001-01-01

Quantum dot (QD) nanostructures have drawn increased interest in recent years. Their small size leads to quantum confinement of the electrons, which is responsible for their unique electronic and optical properties. They promise to find use in a wide range of devices ranging from semiconductor lasers (Bimberg et al (2001), Ribbat et al (2001)) to quantum computing. The properties of QDs are also determined by their shape and composition. All three parameters (size, shape and composition) have a significant impact on their contrast in the transmission electron microscope (TEM), and consequently the possibility arises that these parameters can be extractedmore » from the images. Zone axis plan view images are especially sensitive to the composition of QDs, and image simulation is an important way to understand how the composition determines the contrast. This paper outlines a method of image simulation of QDs developed by Liao et. al. (1999) and presents an application of the method to QDs in wurtzite InN/GaN.« less

Lattice-matched double dip-shaped BAlGaN/AlN quantum well structures for ultraviolet light emission devices

NASA Astrophysics Data System (ADS)

Park, Seoung-Hwan; Ahn, Doyeol

2018-05-01

Ultraviolet light emission characteristics of lattice-matched BxAlyGa1-x-y N/AlN quantum well (QW) structures with double AlGaN delta layers were investigated theoretically. In contrast to conventional single dip-shaped QW structure where the reduction effect of the spatial separation between electron and hole wave functions is negligible, proposed double dip-shaped QW shows significant enhancement of the ultraviolet light emission intensity from a BAlGaN/AlN QW structure due to the reduced spatial separation between electron and hole wave functions. The emission peak of the double dip-shaped QW structure is expected to be about three times larger than that of the conventional rectangular AlGaN/AlN QW structure.

Lifetime broadening in GaAs-AlGaAs quantum well lasers

DOE Office of Scientific and Technical Information (OSTI.GOV)

Kucharska, A.I.; Robbins, D.J.

1990-03-01

Experimental observations of spontaneous emission spectra from GaAs-AlGaAs quantum well lasers show that spectral broadening should be included in any realistic model of laser performance. The authors describe a model of the lifetime broadening due to intraband Auger processes of the Landsberg type and develop it for the case of electron-electron scattering in a 2-D system. They apply the model to the calculation of gain and spontaneous emission spectra and gain-current relationships in short-wavelength GaAs-AlGaAs quantum well lasers, and compare their results with those obtained using both a fixed intraband scattering time and one that varies as {ital n}{sup 1/2},more » where {ital n} is the volume injected carrier density.« less

Comment on ‘Authenticated quantum secret sharing with quantum dialogue based on Bell states’

NASA Astrophysics Data System (ADS)

Gao, Gan; Wang, Yue; Wang, Dong; Ye, Liu

2018-02-01

In the paper (2016 Phys. Scr. 91 085101), Abulkasim et al proposed a authenticated quantum secret sharing scheme. We study the security of the multiparty case in the proposed scheme and find that it is not secure.

Mysterious quantum Cheshire cat: an illusion

NASA Astrophysics Data System (ADS)

Michielsen, K.; Lippert, Th.; De Raedt, H.

2015-09-01

We provide a mystery-free explanation for the experimentally observed facts in the neutron interferometry quantum Cheshire cat experiment of Denkmayr et al. [Nat. Comm. 5, 4492, 2014] in terms of a discrete-event simulation model, demonstrating that the quantum Cheshire cat is an illusion.

Physics Without Physics. The Power of Information-theoretical Principles

NASA Astrophysics Data System (ADS)

D'Ariano, Giacomo Mauro

2017-01-01

David Finkelstein was very fond of the new information-theoretic paradigm of physics advocated by John Archibald Wheeler and Richard Feynman. Only recently, however, the paradigm has concretely shown its full power, with the derivation of quantum theory (Chiribella et al., Phys. Rev. A 84:012311, 2011; D'Ariano et al., 2017) and of free quantum field theory (D'Ariano and Perinotti, Phys. Rev. A 90:062106, 2014; Bisio et al., Phys. Rev. A 88:032301, 2013; Bisio et al., Ann. Phys. 354:244, 2015; Bisio et al., Ann. Phys. 368:177, 2016) from informational principles. The paradigm has opened for the first time the possibility of avoiding physical primitives in the axioms of the physical theory, allowing a re-foundation of the whole physics over logically solid grounds. In addition to such methodological value, the new information-theoretic derivation of quantum field theory is particularly interesting for establishing a theoretical framework for quantum gravity, with the idea of obtaining gravity itself as emergent from the quantum information processing, as also suggested by the role played by information in the holographic principle (Susskind, J. Math. Phys. 36:6377, 1995; Bousso, Rev. Mod. Phys. 74:825, 2002). In this paper I review how free quantum field theory is derived without using mechanical primitives, including space-time, special relativity, Hamiltonians, and quantization rules. The theory is simply provided by the simplest quantum algorithm encompassing a countable set of quantum systems whose network of interactions satisfies the three following simple principles: homogeneity, locality, and isotropy. The inherent discrete nature of the informational derivation leads to an extension of quantum field theory in terms of a quantum cellular automata and quantum walks. A simple heuristic argument sets the scale to the Planck one, and the currently observed regime where discreteness is not visible is the so-called "relativistic regime" of small wavevectors, which holds for all energies ever tested (and even much larger), where the usual free quantum field theory is perfectly recovered. In the present quantum discrete theory Einstein relativity principle can be restated without using space-time in terms of invariance of the eigenvalue equation of the automaton/walk under change of representations. Distortions of the Poincaré group emerge at the Planck scale, whereas special relativity is perfectly recovered in the relativistic regime. Discreteness, on the other hand, has some plus compared to the continuum theory: 1) it contains it as a special regime; 2) it leads to some additional features with GR flavor: the existence of an upper bound for the particle mass (with physical interpretation as the Planck mass), and a global De Sitter invariance; 3) it provides its own physical standards for space, time, and mass within a purely mathematical adimensional context. The paper ends with the future perspectives of this project, and with an Appendix containing biographic notes about my friendship with David Finkelstein, to whom this paper is dedicated.

Dual optical marker Raman characterization of strained GaN-channels on AlN using AlN/GaN/AlN quantum wells and {sup 15}N isotopes

DOE Office of Scientific and Technical Information (OSTI.GOV)

Qi, Meng; Li, Guowang; Protasenko, Vladimir

2015-01-26

This work shows that the combination of ultrathin highly strained GaN quantum wells embedded in an AlN matrix, with controlled isotopic concentrations of Nitrogen enables a dual marker method for Raman spectroscopy. By combining these techniques, we demonstrate the effectiveness in studying strain in the vertical direction. This technique will enable the precise probing of properties of buried active layers in heterostructures, and can be extended in the future to vertical devices such as those used for optical emitters and for power electronics.

THz emission of donor and acceptor doped GaAs/AlGaAs quantum well structures with inserted thin AlAs monolayer

NASA Astrophysics Data System (ADS)

van Dommelen, Paphavee; Daengngam, Chalongrat; Kalasuwan, Pruet

2018-04-01

In this paper, we explore THz range optical intersubband transition energies in a donor doped quantum well of a GaAs/AlGaAs system as a function of the insertion position of an AlAs monolayer in the GaAs quantum well. In simulated models, the optical transition energies between electron subband levels 1 and 2 were higher in the doped structure than in the undoped structure. This may be because the envelope wave function of the second electron subband strongly overlapped the envelope wave function of the first electron subband and influenced the optical intersubband transition between the two levels in the THz range. At different levels of bias voltage at the Schottky barrier on the donor doped structure, the electric field in the growth direction of the structure linearly increased the further away the AlAs monolayer was placed from the reference position. We also simulated the optical transition energies between acceptor energy levels of the acceptor doped structure as a function of the insertion position of the AlAs monolayer. The acceptor doped structure induced THz range emission whereas the undoped structure induced mid-IR emission.

26Al- 26Mg and 207Pb- 206Pb systematics of Allende CAIs: Canonical solar initial 26Al/ 27Al ratio reinstated

NASA Astrophysics Data System (ADS)

Jacobsen, Benjamin; Yin, Qing-zhu; Moynier, Frederic; Amelin, Yuri; Krot, Alexander N.; Nagashima, Kazuhide; Hutcheon, Ian D.; Palme, Herbert

2008-07-01

The precise knowledge of the initial 26Al/ 27Al ratio [( 26Al/ 27Al) 0] is crucial if we are to use the very first solid objects formed in our Solar System, calcium-aluminum-rich inclusions (CAIs) as the "time zero" age-anchor and guide future work with other short-lived radio-chronometers in the early Solar System, as well as determining the inventory of heat budgets from radioactivities for early planetary differentiation. New high-precision multi-collector inductively-coupled plasma mass spectrometry (MC-ICP-MS) measurements of 27Al/ 24Mg ratios and Mg-isotopic compositions of nine whole-rock CAIs (six mineralogically characterized fragments and three micro-drilled inclusions) from the CV carbonaceous chondrite, Allende yield a well-defined 26Al- 26Mg fossil isochron with an ( 26Al/ 27Al) 0 of (5.23 ± 0.13) × 10 - 5 . Internal mineral isochrons obtained for three of these CAIs ( A44A, AJEF, and A43) are consistent with the whole-rock CAI isochron. The mineral isochron of AJEF with ( 26Al/ 27Al) 0 = (4.96 ± 0.25) × 10 - 5 , anchored to our precisely determined absolute 207Pb- 206Pb age of 4567.60 ± 0.36 Ma for the same mineral separates, reinstate the "canonical" ( 26Al/ 27Al) 0 of 5 × 10 - 5 for the early Solar System. The uncertainty in ( 26Al/ 27Al) 0 corresponds to a maximum time span of ± 20 Ka (thousand years), suggesting that the Allende CAI formation events were culminated within this time span. Although all Allende CAIs studied experienced multistage formation history, including melting and evaporation in the solar nebula and post-crystallization alteration likely on the asteroidal parent body, the 26Al- 26Mg and U-Pb-isotopic systematics of the mineral separates and bulk CAIs behaved largely as closed-system since their formation. Our data do not support the "supra-canonical" 26Al/ 27Al ratio of individual minerals or their mixtures in CV CAIs, suggesting that the supra-canonical 26Al/ 27Al ratio in the CV CAIs may have resulted from post-crystallization inter-mineral redistribution of Mg isotopes within an individual inclusion. This redistribution must be volumetrically minor in order to satisfy the mass balance of the precisely defined bulk CAI and bulk mineral data obtained by MC-ICP-MS. The radiogenic 208Pb*/ 206Pb* ratio obtained as a by-product from the Pb-Pb age dating is used to estimate time-integrated 232Th/ 238U ratio ( κ value) of CAIs. Limited κ variations among the minerals within a single CAI, contrasted by much larger variations among the bulk CAIs, suggest Th/U fractionation occurred prior to crystallization of igneous CAIs. If interpreted as primordial heterogeneity, the κ value can be used to calculate the mean age of the interstellar dust from which the CAIs condensed.

Plasmon-Assisted Selective and Super-Resolving Excitation of Individual Quantum Emitters on a Metal Nanowire.

PubMed

Li, Qiang; Pan, Deng; Wei, Hong; Xu, Hongxing

2018-03-14

Hybrid systems composed of multiple quantum emitters coupled with plasmonic waveguides are promising building blocks for future integrated quantum nanophotonic circuits. The techniques that can super-resolve and selectively excite contiguous quantum emitters in a diffraction-limited area are of great importance for studying the plasmon-mediated interaction between quantum emitters and manipulating the single plasmon generation and propagation in plasmonic circuits. Here we show that multiple quantum dots coupled with a silver nanowire can be controllably excited by tuning the interference field of surface plasmons on the nanowire. Because of the period of the interference pattern is much smaller than the diffraction limit, we demonstrate the selective excitation of two quantum dots separated by a distance as short as 100 nm. We also numerically demonstrate a new kind of super-resolution imaging method that combines the tunable surface plasmon interference pattern on the NW with the structured illumination microscopy technique. Our work provides a novel high-resolution optical excitation and imaging method for the coupled systems of multiple quantum emitters and plasmonic waveguides, which adds a new tool for studying and manipulating single quantum emitters and single plasmons for quantum plasmonic circuitry applications.

Self-assembled quantum dot structures in a hexagonal nanowire for quantum photonics.

PubMed

Yu, Ying; Dou, Xiu-Ming; Wei, Bin; Zha, Guo-Wei; Shang, Xiang-Jun; Wang, Li; Su, Dan; Xu, Jian-Xing; Wang, Hai-Yan; Ni, Hai-Qiao; Sun, Bao-Quan; Ji, Yuan; Han, Xiao-Dong; Niu, Zhi-Chuan

2014-05-01

Two types of quantum nanostructures based on self-assembled GaAs quantumdots embedded into GaAs/AlGaAs hexagonal nanowire systems are reported, opening a new avenue to the fabrication of highly efficient single-photon sources, as well as the design of novel quantum optics experiments and robust quantum optoelectronic devices operating at higher temperature, which are required for practical quantum photonics applications. © 2014 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Improving the performance of AlGaN-based deep-ultraviolet light-emitting diodes using electron blocking layer with a heart-shaped graded Al composition

NASA Astrophysics Data System (ADS)

Kwon, M. R.; Park, T. H.; Lee, T. H.; Lee, B. R.; Kim, T. G.

2018-04-01

We propose a design for highly efficient AlGaN-based deep-ultraviolet light-emitting diodes (DUV LEDs) using a heart-shaped graded Al composition electron-blocking layer (EBL). This novel structure reduced downward band bending at the interface between the last quantum barrier and the EBL and flattened the electrostatic field in the interlayer between the barriers of the multi-quantum barrier EBL. Consequently, electron leakage was significantly suppressed and hole injection efficiency was found to have improved. The parameter values of simulation were extracted from the experimental data of the reference DUV LEDs. Using the SimuLED, we compared the electrical and optical properties of three structures with different Al compositions in the active region and the EBL. The internal quantum efficiency of the proposed structure was shown to exceed those of the reference DUV LEDs by a factor of 1.9. Additionally, the output power at 20 mA was found to increase by a factor of 2.1.

Classical-quantum arbitrarily varying wiretap channel: Secret message transmission under jamming attacks

NASA Astrophysics Data System (ADS)

Boche, Holger; Cai, Minglai; Deppe, Christian; Nötzel, Janis

2017-10-01

We analyze arbitrarily varying classical-quantum wiretap channels. These channels are subject to two attacks at the same time: one passive (eavesdropping) and one active (jamming). We elaborate on our previous studies [H. Boche et al., Quantum Inf. Process. 15(11), 4853-4895 (2016) and H. Boche et al., Quantum Inf. Process. 16(1), 1-48 (2016)] by introducing a reduced class of allowable codes that fulfills a more stringent secrecy requirement than earlier definitions. In addition, we prove that non-symmetrizability of the legal link is sufficient for equality of the deterministic and the common randomness assisted secrecy capacities. Finally, we focus on analytic properties of both secrecy capacities: We completely characterize their discontinuity points and their super-activation properties.

Improving the light output power of DUV-LED by introducing an intrinsic last quantum barrier interlayer on the high-quality AlN template

NASA Astrophysics Data System (ADS)

Tsai, Chia-Lung; Liu, Hsueh-Hsing; Chen, Jun-Wei; Lu, Chien-Pin; Ikenaga, Kazutada; Tabuchi, Toshiya; Matsumoto, Koh; Fu, Yi-Keng

2017-12-01

We demonstrate that the light output power of deep ultraviolet light-emitting diodes (DUV-LEDs) can be improved by introducing an intrinsic last quantum barrier interlayer to a high quality AlN template. The light output power of the DUV-LEDs can be doubled by substituting the last quantum barrier with an intrinsic last quantum barrier (u-LQB)/Mg-doped LQB for only pure u-LQB in the same thickness with a 35 A/cm2 injection current. It is believed that the improved performance of the DUV LED could be attributed to the decreased diffusion of Mg tunneling into MQW and the reduction of sub-band parasitic emissions.

Entropic uncertainty and measurement reversibility

NASA Astrophysics Data System (ADS)

Berta, Mario; Wehner, Stephanie; Wilde, Mark M.

2016-07-01

The entropic uncertainty relation with quantum side information (EUR-QSI) from (Berta et al 2010 Nat. Phys. 6 659) is a unifying principle relating two distinctive features of quantum mechanics: quantum uncertainty due to measurement incompatibility, and entanglement. In these relations, quantum uncertainty takes the form of preparation uncertainty where one of two incompatible measurements is applied. In particular, the ‘uncertainty witness’ lower bound in the EUR-QSI is not a function of a post-measurement state. An insightful proof of the EUR-QSI from (Coles et al 2012 Phys. Rev. Lett. 108 210405) makes use of a fundamental mathematical consequence of the postulates of quantum mechanics known as the non-increase of quantum relative entropy under quantum channels. Here, we exploit this perspective to establish a tightening of the EUR-QSI which adds a new state-dependent term in the lower bound, related to how well one can reverse the action of a quantum measurement. As such, this new term is a direct function of the post-measurement state and can be thought of as quantifying how much disturbance a given measurement causes. Our result thus quantitatively unifies this feature of quantum mechanics with the others mentioned above. We have experimentally tested our theoretical predictions on the IBM quantum experience and find reasonable agreement between our predictions and experimental outcomes.

Measures for Predictors of Innovation Adoption

PubMed Central

Chor, Ka Ho Brian; Wisdom, Jennifer P.; Olin, Su-Chin Serene; Hoagwood, Kimberly E.; Horwitz, Sarah M.

2014-01-01

Building on a narrative synthesis of adoption theories by Wisdom et al. (2013), this review identifies 118 measures associated with the 27 adoption predictors in the synthesis. The distribution of measures is uneven across the predictors and predictors vary in modifiability. Multiple dimensions and definitions of predictors further complicate measurement efforts. For state policymakers and researchers, more effective and integrated measurement can advance the adoption of complex innovations such as evidence-based practices. PMID:24740175

Influence of dislocation density on internal quantum efficiency of GaN-based semiconductors

NASA Astrophysics Data System (ADS)

Yu, Jiadong; Hao, Zhibiao; Li, Linsen; Wang, Lai; Luo, Yi; Wang, Jian; Sun, Changzheng; Han, Yanjun; Xiong, Bing; Li, Hongtao

2017-03-01

By considering the effects of stress fields coming from lattice distortion as well as charge fields coming from line charges at edge dislocation cores on radiative recombination of exciton, a model of carriers' radiative and non-radiative recombination has been established in GaN-based semiconductors with certain dislocation density. Using vector average of the stress fields and the charge fields, the relationship between dislocation density and the internal quantum efficiency (IQE) is deduced. Combined with related experimental results, this relationship is fitted well to the trend of IQEs of bulk GaN changing with screw and edge dislocation density, meanwhile its simplified form is fitted well to the IQEs of AlGaN multiple quantum well LEDs with varied threading dislocation densities but the same light emission wavelength. It is believed that this model, suitable for different epitaxy platforms such as MOCVD and MBE, can be used to predict to what extent the luminous efficiency of GaN-based semiconductors can still maintain when the dislocation density increases, so as to provide a reasonable rule of thumb for optimizing the epitaxial growth of GaN-based devices.

Study of the Al m 26 ( d , p ) Al 27 Reaction and the Influence of the Al 26 0 + Isomer on the Destruction of Al 26 in the Galaxy

DOE Office of Scientific and Technical Information (OSTI.GOV)

Almaraz-Calderon, S.; Rehm, K. E.; Gerken, N.

The existence of 26Al (t 1/2 = 7.17 × 10 5 yr) in the interstellar medium provides a direct confirmation of ongoing nucleosynthesis in the Galaxy. The presence of a low-lying 0 + isomer ( 26Al m), however, severely complicates the astrophysical calculations. Here we present for the first time a study of the 26Al m (d, p) 27 Al reaction using an isomeric 26Al beam. The selectivity of this reaction allowed the study of ℓ = 0 transfers to T = 1/2, and T = 3/2 states in 27Al . Mirror symmetry arguments were then used to constrain themore » 26Al m (p,γ) 27Si reaction rate and provide an experimentally determined upper limit of the rate for the destruction of isomeric 26Al via radiative proton capture reactions, which is expected to dominate the destruction path of 26Al m in asymptotic giant branch stars, classical novae, and core collapse supernovae.« less

Study of the Al m 26 ( d , p ) Al 27 Reaction and the Influence of the Al 26 0 + Isomer on the Destruction of Al 26 in the Galaxy

DOE PAGES

Almaraz-Calderon, S.; Rehm, K. E.; Gerken, N.; ...

2017-08-17

The existence of 26Al (t 1/2 = 7.17 × 10 5 yr) in the interstellar medium provides a direct confirmation of ongoing nucleosynthesis in the Galaxy. The presence of a low-lying 0 + isomer ( 26Al m), however, severely complicates the astrophysical calculations. Here we present for the first time a study of the 26Al m (d, p) 27 Al reaction using an isomeric 26Al beam. The selectivity of this reaction allowed the study of ℓ = 0 transfers to T = 1/2, and T = 3/2 states in 27Al . Mirror symmetry arguments were then used to constrain themore » 26Al m (p,γ) 27Si reaction rate and provide an experimentally determined upper limit of the rate for the destruction of isomeric 26Al via radiative proton capture reactions, which is expected to dominate the destruction path of 26Al m in asymptotic giant branch stars, classical novae, and core collapse supernovae.« less

Study of the ^{26}Al^{m}(d,p)^{27}Al Reaction and the Influence of the ^{26}Al 0^{+} Isomer on the Destruction of ^{26}Al in the Galaxy.

PubMed

Almaraz-Calderon, S; Rehm, K E; Gerken, N; Avila, M L; Kay, B P; Talwar, R; Ayangeakaa, A D; Bottoni, S; Chen, A A; Deibel, C M; Dickerson, C; Hanselman, K; Hoffman, C R; Jiang, C L; Kuvin, S A; Nusair, O; Pardo, R C; Santiago-Gonzalez, D; Sethi, J; Ugalde, C

2017-08-18

The existence of ^{26}Al (t_{1/2}=7.17×10^{5}  yr) in the interstellar medium provides a direct confirmation of ongoing nucleosynthesis in the Galaxy. The presence of a low-lying 0^{+} isomer (^{26}Al^{m}), however, severely complicates the astrophysical calculations. We present for the first time a study of the ^{26}Al^{m}(d,p)^{27}Al reaction using an isomeric ^{26}Al beam. The selectivity of this reaction allowed the study of ℓ=0 transfers to T=1/2, and T=3/2 states in ^{27}Al. Mirror symmetry arguments were then used to constrain the ^{26}Al^{m}(p,γ)^{27}Si reaction rate and provide an experimentally determined upper limit of the rate for the destruction of isomeric ^{26}Al via radiative proton capture reactions, which is expected to dominate the destruction path of ^{26}Al^{m} in asymptotic giant branch stars, classical novae, and core collapse supernovae.

Reply to 'Comment on 'Quantum time-of-flight distribution for cold trapped atoms''

DOE Office of Scientific and Technical Information (OSTI.GOV)

Ali, Md. Manirul; Home, Dipankar; Pan, Alok K.

2008-02-15

In their comment Gomes et al. [Phys. Rev. A 77, 026101 (2008)] have questioned the possibility of empirically testable differences existing between the semiclassical time of flight distribution for cold trapped atoms and a quantum distribution discussed by us recently [Ali et al., Phys. Rev. A 75, 042110 (2007).]. We argue that their criticism is based on a semiclassical treatment having restricted applicability for a particular trapping potential. Their claim does not preclude, in general, the possibility of differences between the semiclassical calculations and fully quantum results for the arrival time distribution of freely falling atoms.

Notes on two multiparty quantum secret sharing schemes

NASA Astrophysics Data System (ADS)

Gao, Gan

In the paper [H. Abulkasim et al., Int. J. Quantum Inform. 15 (2017) 1750023], Abulkasim et al. proposed a quantum secret sharing scheme based on Bell states. We study the security of the multiparty case in the proposed scheme and detect that it is not secure. In the paper [Y. Du and W. Bao, Opt. Commun. 308 (2013) 159], Du and Bao listed Gao’s scheme and gave a attack strategy on the listed scheme. We point out that their listing scheme is not the genuine Gao’s scheme and their research method is not advisable.

Laser diode bars based on AlGaAs/GaAs quantum-well heterostructures with an efficiency up to 70%

NASA Astrophysics Data System (ADS)

Ladugin, M. A.; Marmalyuk, A. A.; Padalitsa, A. A.; Bagaev, T. A.; Andreev, A. Yu.; Telegin, K. Yu.; Lobintsov, A. V.; Davydova, E. I.; Sapozhnikov, S. M.; Danilov, A. I.; Podkopaev, A. V.; Ivanova, E. B.; Simakov, V. A.

2017-05-01

The results of the development and fabrication of laser diode bars (λ = 800 - 810 nm) based on AlGaAs/GaAs quantum-well heterostructures with a high efficiency are presented. An increase in the internal quantum and external differential efficiencies together with a decrease in the working voltage and the series resistance allowed us to improve the output parameters of the semiconductor laser under quasi-cw pumping. The output power of the laser diode bars with a 5-mm transverse length reached 210 W, and the efficiency was ~70%.

Bond order potential module for LAMMPS

DOE Office of Scientific and Technical Information (OSTI.GOV)

2012-09-11

pair_bop is a module for performing energy calculations using the Bond Order Potential (BOP) for use in the parallel molecular dynamics code LAMMPS. The bop pair style computes BOP based upon quantum mechanical incorporating both sigma and pi bondings. By analytically deriving the BOP pair bop from quantum mechanical theory its transferability to different phases can approach that of quantum mechanical methods. This potential is extremely effective at modeling 111-V and II-VI compounds such as GaAs and CdTe. This potential is similar to the original BOP developed by Pettifor and later updated by Murdock et al. and Ward et al.

Measurement device-independent quantum dialogue

NASA Astrophysics Data System (ADS)

Maitra, Arpita

2017-12-01

Very recently, the experimental demonstration of quantum secure direct communication (QSDC) with state-of-the-art atomic quantum memory has been reported (Zhang et al. in Phys Rev Lett 118:220501, 2017). Quantum dialogue (QD) falls under QSDC where the secrete messages are communicated simultaneously between two legitimate parties. The successful experimental demonstration of QSDC opens up the possibilities for practical implementation of QD protocols. Thus, it is necessary to analyze the practical security issues of QD protocols for future implementation. Since the very first proposal for QD by Nguyen (Phys Lett A 328:6-10, 2004), a large number of variants and extensions have been presented till date. However, all of those leak half of the secret bits to the adversary through classical communications of the measurement results. In this direction, motivated by the idea of Lo et al. (Phys Rev Lett 108:130503, 2012), we propose a measurement device-independent quantum dialogue scheme which is resistant to such information leakage as well as side-channel attacks. In the proposed protocol, Alice and Bob, two legitimate parties, are allowed to prepare the states only. The states are measured by an untrusted third party who may himself behave as an adversary. We show that our protocol is secure under this adversarial model. The current protocol does not require any quantum memory, and thus, it is inherently robust against memory attacks. Such robustness might not be guaranteed in the QSDC protocol with quantum memory (Zhang et al. 2017).

Coupling between graphene and intersubband collective excitations in quantum wells

NASA Astrophysics Data System (ADS)

Gonzalez de la Cruz, G.

2017-08-01

Recently, strong light-matter coupling between the electromagnetic modes in plasmonic metasurfaces with quantum-engineering electronic intersubband transitions in quantum wells has been demonstrated experimentally (Benz et al., [14], Lee et al., [15]). These novel materials combining different two-dimensional electronic systems offer new opportunities for tunable optical devices and fundamental studies of collective excitations driven by interlayer Coulomb interactions. In this work, our aim is to study the plasmon spectra of a hybrid structure consisting of conventional two-dimensional electron gas (2DEG) in a semiconductor quantum well and a graphene sheet with an interlayer separation of a. This electronic bilayer structure is immersed in a nonhomgeneous dielectric background of the system. We use a simple model in which the graphene surface plasmons and both; the intrasubband and intersubband collective electron excitations in the quantum well are coupled via screened Coulomb interaction. Here we calculate the dispersion of these relativistic/nonrelativistic new plasmon modes taking into account the thickness of the quantum well providing analytical expressions in the long-wavelength limit.

Interplay of morphology, composition, and optical properties of InP-based quantum dots emitting at the 1.55 μ m telecom wavelength

NASA Astrophysics Data System (ADS)

Carmesin, C.; Schowalter, M.; Lorke, M.; Mourad, D.; Grieb, T.; Müller-Caspary, K.; Yacob, M.; Reithmaier, J. P.; Benyoucef, M.; Rosenauer, A.; Jahnke, F.

2017-12-01

Results for the development and detailed analysis of self-organized InAs/InAlGaAs/InP quantum dots suitable for single-photon emission at the 1.55 μ m telecom wavelength are reported. The structural and compositional properties of the system are obtained from high-resolution scanning transmission electron microscopy of individual quantum dots. The system is composed of almost pure InAs quantum dots embedded in quaternary InAlGaAs barrier material, which is lattice matched to the InP substrate. When using the measured results for a representative quantum-dot geometry as well as experimentally reconstructed alloy concentrations, a combination of strain-field and electronic-state calculations is able to reproduce the quantum-dot emission wavelength in agreement with the experimentally determined photoluminescence spectrum. The inhomogeneous broadening of the latter can be related to calculated variations of the emission wavelength for the experimentally deduced In-concentration fluctuations and size variations.

Effect of a low-temperature-grown GaAs layer on InAs quantum-dot photoluminescence

DOE Office of Scientific and Technical Information (OSTI.GOV)

Kosarev, A. N.; Chaldyshev, V. V., E-mail: chald.gvg@mail.ioffe.ru; Preobrazhenskii, V. V.

2016-11-15

The photoluminescence of InAs semiconductor quantum dots overgrown by GaAs in the low-temperature mode (LT-GaAs) using various spacer layers or without them is studied. Spacer layers are thin GaAs or AlAs layers grown at temperatures normal for molecular-beam epitaxy (MBE). Direct overgrowth leads to photoluminescence disappearance. When using a thin GaAs spacer layer, the photoluminescence from InAs quantum dots is partially recovered; however, its intensity appears lower by two orders of magnitude than in the reference sample in which the quantum-dot array is overgrown at normal temperature. The use of wider-gap AlAs as a spacer-layer material leads to the enhancementmore » of photoluminescence from InAs quantum dots, but it is still more than ten times lower than that of reference-sample emission. A model taking into account carrier generation by light, diffusion and tunneling from quantum dots to the LT-GaAs layer is constructed.« less

Micro-photoluminescence of GaAs/AlGaAs triple concentric quantum rings.

PubMed

Abbarchi, Marco; Cavigli, Lucia; Somaschini, Claudio; Bietti, Sergio; Gurioli, Massimo; Vinattieri, Anna; Sanguinetti, Stefano

2011-10-31

A systematic optical study, including micro, ensemble and time resolved photoluminescence of GaAs/AlGaAs triple concentric quantum rings, self-assembled via droplet epitaxy, is presented. Clear emission from localized states belonging to the ring structures is reported. The triple rings show a fast decay dynamics, around 40 ps, which is expected to be useful for ultrafast optical switching applications.

Monolithic integration of a resonant tunneling diode and a quantum well semiconductor laser

NASA Astrophysics Data System (ADS)

Grave, I.; Kan, S. C.; Griffel, G.; Wu, S. W.; Sa'Ar, A.

1991-01-01

A monolithic integration of a double barrier AlAs/GaAs resonant tunneling diode and a GaAs/AlGaAs quantum well laser is reported. Negative differential resistance and negative differential optical response are observed at room temperature. The device displays bistable electrical and optical characteristics which are voltage controlled. Operation as a two-state optical memory is demonstrated.

Implanted bismuth donors in 28-Si: Process development and electron spin resonance measurements

NASA Astrophysics Data System (ADS)

Weis, C. D.; Lo, C. C.; Lang, V.; George, R. E.; Tyryshkin, A. M.; Bokor, J.; Lyon, S. A.; Morton, J. J. L.; Schenkel, T.

2012-02-01

Spins of donor atoms in silicon are excellent qubit candidates. Isotope engineered substrates provide a nuclear spin free host environment, resulting in long spin coherence times [1,2]. The capability of swapping quantum information between electron and nuclear spins can enable quantum communication and gate operation via the electron spin and quantum memory via the nuclear spin [2]. Spin properties of donor qubit candidates in silicon have been studied mostly for phosphorous and antimony [1-3]. Bismuth donors in silicon exhibit a zero field splitting of 7.4 GHz and have attracted attention as potential nuclear spin memory and spin qubit candidates [4,5] that could be coupled to superconducting resonators [4,6]. We report on progress in the formation of bismuth doped 28-Si epi layers by ion implantation, electrical dopant activation and their study via pulsed electron spin resonance measurements showing narrow linewidths and good coherence times. [4pt] [1] A. M. Tyryshkin, et al. arXiv: 1105.3772 [2] J. J. L. Morton, et al. Nature (2008) [3] T. Schenkel, et al APL 2006; F. R. Bradbury, et al. PRL (2006) [4] R. E. George, et al. PRL (2010) [5] G. W. Morley, et al. Nat Mat (2010) [6] M. Hatridge, et al. PRB (2011), R. Vijay, et al. APL (2010) This work was supported by NSA (100000080295) and DOE (DE-AC02-05CH11231).

Measurement of Effective Drift Velocities of Electrons and Holes in Shallow Multiple Quantum Well P-I Modulators

NASA Astrophysics Data System (ADS)

Yang, Ching-Mei

1995-01-01

P-i-n diodes containing multiple quantum wells (MQWs) in the i-region are the building blocks for photonic devices. When we apply electric field across these devices and illuminate it with light, photo-carriers are created in the i-region. These carriers escape from the wells and drift toward the electrodes; thus photo-voltage is created. The rise- and decay-times of photo-voltages are related to the transport of carriers. In this dissertation, we present theoretical and experimental studies on carrier transport mechanisms of three shallow MQW GaAs/Al _{x}Ga_{1-x}As p-i-n diodes (x = 0.02, 0.04, 0.08) at various bias voltages. We start with the description of the sample structures and their package. We then present the characteristics of these samples including their transmission spectra and responsivity. We will demonstrate that the over-all high quality of these samples, including a strong exciton resonant absorption, ~100% internal quantum efficiencies and completely depleted i-region at bias between +0.75 V to -5 V bias. In our theoretical studies, we first discuss the possible carrier sweep-out mechanisms and estimate the response times associated with these mechanisms. Based on our theoretical model, we conclude that only the drift times of carriers and enhanced diffusion times are important for shallow MQW p-i-n diodes: at high bias, the fast drift times of electrons and holes control the rise-times; at low bias, the slow drift times of holes and the enhanced diffusion times control the decay-times. We have performed picosecond time-resolved pump/probe electro-absorption measurements on these samples. We then obtained the drift times, effective drift velocities and effective mobilities of electrons and holes for these devices. We find that the carrier effective drift velocities (especially for holes) seemed insensitive to the Al concentration in the barriers (in the range of x = 2% to 8%), even though the x = 2% sample does show an overall faster response time. We think the slight difference of the rise- and decay-times of these devices may also be affected by random differences between the samples.

Semiconductor quantum dot super-emitters: spontaneous emission enhancement combined with suppression of defect environment using metal-oxide plasmonic metafilms

NASA Astrophysics Data System (ADS)

Sadeghi, Seyed M.; Wing, Waylin J.; Gutha, Rithvik R.; Sharp, Christina

2018-01-01

We demonstrate that a metal-oxide plasmonic metafilm consisting of a Si/Al oxide junction in the vicinity of a thin gold layer can quarantine excitons in colloidal semiconductor quantum dots against their defect environments. This process happens while the plasmon fields of the gold layer enhance spontaneous emission decay rates of the quantum dots. We study the emission dynamics of such quantum dots when the distance between the Si/Al oxide junction and the gold thin layer is varied. The results show that for distances less than a critical value the lifetime of the quantum dots can be elongated while they experience intense plasmon fields. This suggests that the metal-oxide metafilm can keep photo-excited electrons in the cores of the quantum dots, suppressing their migration to the surface defect sites. This leads to suppression of Auger recombination, offering quantum dot super-emitters with emission that is enhanced not only by the plasmon fields (Purcell effect), but also by strong suppression of the non-radiative decay caused by the defect sites.

Quantum-like dynamics of decision-making

NASA Astrophysics Data System (ADS)

Asano, Masanari; Basieva, Irina; Khrennikov, Andrei; Ohya, Masanori; Tanaka, Yoshiharu

2012-03-01

In cognitive psychology, some experiments for games were reported, and they demonstrated that real players did not use the “rational strategy” provided by classical game theory and based on the notion of the Nasch equilibrium. This psychological phenomenon was called the disjunction effect. Recently, we proposed a model of decision making which can explain this effect (“irrationality” of players) Asano et al. (2010, 2011) [23,24]. Our model is based on the mathematical formalism of quantum mechanics, because psychological fluctuations inducing the irrationality are formally represented as quantum fluctuations Asano et al. (2011) [55]. In this paper, we reconsider the process of quantum-like decision-making more closely and redefine it as a well-defined quantum dynamics by using the concept of lifting channel, which is an important concept in quantum information theory. We also present numerical simulation for this quantum-like mental dynamics. It is non-Markovian by its nature. Stabilization to the steady state solution (determining subjective probabilities for decision making) is based on the collective effect of mental fluctuations collected in the working memory of a decision maker.

Nanometer-scale monitoring of quantum-confined Stark effect and emission efficiency droop in multiple GaN/AlN quantum disks in nanowires

NASA Astrophysics Data System (ADS)

Zagonel, L. F.; Tizei, L. H. G.; Vitiello, G. Z.; Jacopin, G.; Rigutti, L.; Tchernycheva, M.; Julien, F. H.; Songmuang, R.; Ostasevicius, T.; de la Peña, F.; Ducati, C.; Midgley, P. A.; Kociak, M.

2016-05-01

We report on a detailed study of the intensity dependent optical properties of individual GaN/AlN quantum disks (QDisks) embedded into GaN nanowires (NW). The structural and optical properties of the QDisks were probed by high spatial resolution cathodoluminescence (CL) in a scanning transmission electron microscope (STEM). By exciting the QDisks with a nanometric electron beam at currents spanning over three orders of magnitude, strong nonlinearities (energy shifts) in the light emission are observed. In particular, we find that the amount of energy shift depends on the emission rate and on the QDisk morphology (size, position along the NW and shell thickness). For thick QDisks (>4 nm), the QDisk emission energy is observed to blueshift with the increase of the emission intensity. This is interpreted as a consequence of the increase of carriers density excited by the incident electron beam inside the QDisks, which screens the internal electric field and thus reduces the quantum confined Stark effect (QCSE) present in these QDisks. For thinner QDisks (<3 nm ), the blueshift is almost absent in agreement with the negligible QCSE at such sizes. For QDisks of intermediate sizes there exists a current threshold above which the energy shifts, marking the transition from unscreened to partially screened QCSE. From the threshold value we estimate the lifetime in the unscreened regime. These observations suggest that, counterintuitively, electrons of high energy can behave ultimately as single electron-hole pair generators. In addition, when we increase the current from 1 to 10 pA the light emission efficiency drops by more than one order of magnitude. This reduction of the emission efficiency is a manifestation of the "efficiency droop" as observed in nitride-based 2D light emitting diodes, a phenomenon tentatively attributed to the Auger effect.

Growth of high-quality InGaN/GaN LED structures on (1 1 1) Si substrates with internal quantum efficiency exceeding 50%

NASA Astrophysics Data System (ADS)

Lee, JaeWon; Tak, Youngjo; Kim, Jun-Youn; Hong, Hyun-Gi; Chae, Suhee; Min, Bokki; Jeong, Hyungsu; Yoo, Jinwoo; Kim, Jong-Ryeol; Park, Youngsoo

2011-01-01

GaN-based light-emitting-diodes (LEDs) on (1 1 1) Si substrates with internal quantum efficiency (IQE) exceeding 50% have been successfully grown by metal organic vapor phase epitaxy (MOVPE). 3.5 μm thick crack-free GaN epitaxial layers were grown on the Si substrates by the re-growth method on patterned templates. Series of step-graded Al xGa 1- xN epitaxial layers were used as the buffer layers to compensate thermal tensile stresses produced during the post-growth cooling process as well as to reduce the density of threading dislocations (TDs) generated due to the lattice mismatches between III-nitride layers and the silicon substrates. The light-emitting region consisted of 1.8 μm thick n-GaN, 3 periods of InGaN/GaN superlattice, InGaN/GaN multiple quantum wells (MQWs) designed for a peak wavelength of about 455 nm, an electron blocking layer (EBL), and p-GaN. The full-widths at half-maximum (FWHM) of (0 0 0 2) and (1 0 -1 2) ω-rocking curves of the GaN epitaxial layers were 410 and 560 arcsec, respectively. Cross-sectional transmission electron microscopy (TEM) investigation revealed that the propagation of the threading dislocations was mostly limited to the interface between the last Al xGa 1- xN buffer and n-GaN layers. The density of the threading dislocations induced pits of n-GaN, as estimated by atomic force microscopy (AFM), was about 5.5×10 8 cm -2. Temperature dependent photoluminescence (PL) measurements with a relative intensity integration method were carried out to estimate the internal quantum efficiency (IQE) of the light-emitting structures grown on Si, which reached up to 55%.

Experimental investigation of terahertz quantum cascade laser with variable barrier heights

DOE Office of Scientific and Technical Information (OSTI.GOV)

Jiang, Aiting; Vijayraghavan, Karun; Belkin, Mikhail A., E-mail: mbelkin@ece.utexas.edu

2014-04-28

We report an experimental study of terahertz quantum cascade lasers with variable barrier heights based on the Al{sub x}Ga{sub 1–x}As/GaAs material system. Two new designs are developed based on semiclassical ensemble Monte Carlo simulations using state-of-the-art Al{sub 0.15}Ga{sub 0.85}As/GaAs three-quantum-well resonant phonon depopulation active region design as a reference. The new designs achieved maximum lasing temperatures of 188 K and 172 K, as compared to the maximum lasing temperature of 191 K for the reference structure. These results demonstrate that terahertz quantum cascade laser designs with variable barrier heights provide a viable alternative to the traditional active region designs with fixed barrier composition.more » Additional design space offered by using variable barriers may lead to future improvements in the terahertz quantum cascade laser performance.« less

The Beta-Delayed Proton and Gamma Decay of 27P for Nuclear Astrophysics

NASA Astrophysics Data System (ADS)

McCleskey, E.; Banu, A.; McCleskey, M.; Roeder, B.; Saastamoinen, A.; Spiridon, A.; Trache, L.; Tribble, R. E.; Davinson, T.; Doherty, D.; Lotay, G. J.; Wallace, J.; Woods, P. J.

2013-10-01

The main creation site of 26Al is currently under debate. The reactions for its creation or destruction are also not completely known. When 26Al is created in novae, the reaction chain is: 24Mg(p,γ)25Al(β + v)25Mg(p,γ)26Al, but this chain can be by-passed by another chain: 25Al(p,γ)26Si(p,γ)27P and it can also be destroyed directly. Another way to by-pass it is through 26mAl(p,γ)27Si* which is dominated by resonant capture. Using the Momentum Achromat Recoil Spectrometer (MARS) at the Texas A&M Cyclotron Institute and inverse kinematics, this destruction reaction was studied by the beta-delayed proton and gamma decay of 27P. Due to selection rules, states populated above the proton threshold in the compound system (27Si*) can decay to 26mAl, which are the states of interest for the capture reaction. James Madison University, VA, USA.

Multiple quantum coherence spectroscopy.

PubMed

Mathew, Nathan A; Yurs, Lena A; Block, Stephen B; Pakoulev, Andrei V; Kornau, Kathryn M; Wright, John C

2009-08-20

Multiple quantum coherences provide a powerful approach for studies of complex systems because increasing the number of quantum states in a quantum mechanical superposition state increases the selectivity of a spectroscopic measurement. We show that frequency domain multiple quantum coherence multidimensional spectroscopy can create these superposition states using different frequency excitation pulses. The superposition state is created using two excitation frequencies to excite the symmetric and asymmetric stretch modes in a rhodium dicarbonyl chelate and the dynamic Stark effect to climb the vibrational ladders involving different overtone and combination band states. A monochromator resolves the free induction decay of different coherences comprising the superposition state. The three spectral dimensions provide the selectivity required to observe 19 different spectral features associated with fully coherent nonlinear processes involving up to 11 interactions with the excitation fields. The different features act as spectroscopic probes of the diagonal and off-diagonal parts of the molecular potential energy hypersurface. This approach can be considered as a coherent pump-probe spectroscopy where the pump is a series of excitation pulses that prepares a multiple quantum coherence and the probe is another series of pulses that creates the output coherence.

Spin glass behavior in frustrated quantum spin system CuAl 2 O 4 with a possible orbital liquid state

DOE Office of Scientific and Technical Information (OSTI.GOV)

Nirmala, R.; Jang, Kwang-Hyun; Sim, Hasung

2017-02-15

CuAl 2O 4 is a normal spinel oxide having quantum spin, S = 1/2 for Cu 2+. It is a rather unique feature that the Cu 2+ ions of CuAl 2O 4 sit at a tetrahedral position, not like the usual octahedral position for many oxides. At low temperatures, it exhibits all the thermodynamic evidence of a quantum spin glass. For example, the polycrystalline CuAl 2O 4 shows a cusp centered at ~2 K in the low-field dc magnetization data and a clear frequency dependence in the ac magnetic susceptibility while it displays logarithmic relaxation behavior in a time dependencemore » of the magnetization. At the same time, there is a peak at ~2.3 K in the heat capacity, which shifts towards a higher temperature with magnetic fields. Conversely, there is no evidence of new superlattice peaks in the high-resolution neutron powder diffraction data when cooled from 40 to 0.4 K. This implies that there is no long-ranged magnetic order down to 0.4 K, thus confirming a spin glass-like ground state for CuAl 2O 4. Interestingly, there is no sign of structural distortion either although Cu 2+ is a Jahn–Teller active ion. Therefore, we claim that an orbital liquid state is the most likely ground state in CuAl 2O 4. Of further interest, it also exhibits a large frustration parameter, f = |θ CW/T m| ~ 67, one of the largest values reported for spinel oxides. These observations suggest that CuAl 2O 4 should be a rare example of a frustrated quantum spin glass with a good candidate for an orbital liquid state.« less

A Preliminary Shape Model of 27 Euterpe

NASA Astrophysics Data System (ADS)

Stephens, R.; Warner, B. D.; Megna, R.; Coley, D.

2011-10-01

We obtained dense rotational lightcurves for the Main-Belt asteroid (27) Euterpe during three apparitions in 2000, 2009 and 2010 with planned observations in the summer of 2011. These were combined with sparse lightcurve data from the USNO to determine a preliminary spin vector and model shape (see Durech et al. [2] for a discussion regarding the differences between dense and sparse data sets). The analysis suggests that Euterpe has albedo features making the determination of an unambiguous spin vector and model shape difficult. So far, Euterpe's near spherical shape, low inclination, pole within 30 degrees of the plane of the solar system, and possible albedo features cause multiple pole and shape solutions to be present.

Nanofabrication of Gate-defined GaAs/AlGaAs Lateral Quantum Dots

PubMed Central

Bureau-Oxton, Chloé; Camirand Lemyre, Julien; Pioro-Ladrière, Michel

2013-01-01

A quantum computer is a computer composed of quantum bits (qubits) that takes advantage of quantum effects, such as superposition of states and entanglement, to solve certain problems exponentially faster than with the best known algorithms on a classical computer. Gate-defined lateral quantum dots on GaAs/AlGaAs are one of many avenues explored for the implementation of a qubit. When properly fabricated, such a device is able to trap a small number of electrons in a certain region of space. The spin states of these electrons can then be used to implement the logical 0 and 1 of the quantum bit. Given the nanometer scale of these quantum dots, cleanroom facilities offering specialized equipment- such as scanning electron microscopes and e-beam evaporators- are required for their fabrication. Great care must be taken throughout the fabrication process to maintain cleanliness of the sample surface and to avoid damaging the fragile gates of the structure. This paper presents the detailed fabrication protocol of gate-defined lateral quantum dots from the wafer to a working device. Characterization methods and representative results are also briefly discussed. Although this paper concentrates on double quantum dots, the fabrication process remains the same for single or triple dots or even arrays of quantum dots. Moreover, the protocol can be adapted to fabricate lateral quantum dots on other substrates, such as Si/SiGe. PMID:24300661

Mesoscopic Elastic Distortions in GaAs Quantum Dot Heterostructures.

PubMed

Pateras, Anastasios; Park, Joonkyu; Ahn, Youngjun; Tilka, Jack A; Holt, Martin V; Reichl, Christian; Wegscheider, Werner; Baart, Timothy A; Dehollain, Juan Pablo; Mukhopadhyay, Uditendu; Vandersypen, Lieven M K; Evans, Paul G

2018-05-09

Quantum devices formed in high-electron-mobility semiconductor heterostructures provide a route through which quantum mechanical effects can be exploited on length scales accessible to lithography and integrated electronics. The electrostatic definition of quantum dots in semiconductor heterostructure devices intrinsically involves the lithographic fabrication of intricate patterns of metallic electrodes. The formation of metal/semiconductor interfaces, growth processes associated with polycrystalline metallic layers, and differential thermal expansion produce elastic distortion in the active areas of quantum devices. Understanding and controlling these distortions present a significant challenge in quantum device development. We report synchrotron X-ray nanodiffraction measurements combined with dynamical X-ray diffraction modeling that reveal lattice tilts with a depth-averaged value up to 0.04° and strain on the order of 10 -4 in the two-dimensional electron gas (2DEG) in a GaAs/AlGaAs heterostructure. Elastic distortions in GaAs/AlGaAs heterostructures modify the potential energy landscape in the 2DEG due to the generation of a deformation potential and an electric field through the piezoelectric effect. The stress induced by metal electrodes directly impacts the ability to control the positions of the potential minima where quantum dots form and the coupling between neighboring quantum dots.

Effect of pressure on the short-range structure and speciation of carbon in alkali silicate and aluminosilicate glasses and melts at high pressure up to 8 GPa: 13C, 27Al, 17O and 29Si solid-state NMR study

NASA Astrophysics Data System (ADS)

Kim, Eun Jeong; Fei, Yingwei; Lee, Sung Keun

2018-03-01

Despite the pioneering efforts to explore the nature of carbon in carbon-bearing silicate melts under compression, experimental data for the speciation and the solubility of carbon in silicate melts above 4 GPa have not been reported. Here, we explore the speciation of carbon and pressure-induced changes in network structures of carbon-bearing silicate (Na2O-3SiO2, NS3) and sodium aluminosilicate (NaAlSi3O8, albite) glasses quenched from melts at high pressure up to 8 GPa using multi-nuclear solid-state NMR. The 27Al triple quantum (3Q) MAS NMR spectra for carbon-bearing albite melts revealed the pressure-induced increase in the topological disorder around 4 coordinated Al ([4]Al) without forming [5,6]Al. These structural changes are similar to those in volatile-free albite melts at high pressure, indicating that the addition of CO2 in silicate melts may not induce any additional increase in the topological disorder around Al at high pressure. 13C MAS NMR spectra for carbon-bearing albite melts show multiple carbonate species, including [4]Si(CO3)[4]Si, [4]Si(CO3)[4]Al, [4]Al(CO3)[4]Al, and free CO32-. The fraction of [4]Si(CO3)[4]Al increases with increasing pressure, while those of other bridging carbonate species decrease, indicating that the addition of CO2 may enhance mixing of Si and Al at high pressure. A noticeable change is not observed for 29Si NMR spectra for the carbon-bearing albite glasses with varying pressure at 1.5-6 GPa. These NMR results confirm that the densification mechanisms established for fluid-free, polymerized aluminosilicate melts can be applied to the carbon-bearing albite melts at high pressure. In contrast, the 29Si MAS NMR spectra for partially depolymerized, carbon-bearing NS3 glasses show that the fraction of [5,6]Si increases with increasing pressure at the expense of Q3 species ([4]Si species with one non-bridging oxygen as the nearest neighbor). The pressure-induced increase in topological disorder around Si is evident from an increase in peak width of [4]Si with pressure. 17O NMR spectrum shows that the fraction of Na⋯Osbnd [5]Si in carbon-bearing NS3 glasses is less than that of carbon-free NS3 glasses at 6 GPa potentially due to the formation of bridging carbonate species. While its presence is not evident from the 17O NMR spectrum primarily due to low carbon concentration, 13C MAS NMR results imply the formation of bridging carbonates, [4]Si(CO3)[4]Si, above 6 GPa. The spin-lattice relaxation time (T1) of CO2 in albite melts increases with increasing pressure from 42 s (at 1.5 GPa) to 149 s (at 6 GPa). Taking the pressure-induced change in T1 of carbon species into consideration, total carbon content in carbon-bearing albite melts increases with pressure from ∼1 wt% at 1.5 GPa to ∼4.1 wt% at 6 GPa. The results also reveal a noticeable drop in the peak intensity of free carbonates in carbon-bearing NS3 melts at 6 GPa, implying a potential non-linear change in the carbon solubility with pressure. The current results of carbon speciation in the silicate melts above 4 GPa provide an improved link among the atomic configurations around carbon species, their carbon contents, and isotope composition of carbon-bearing melts in the upper mantle.

Room-Temperature Quantum Ballistic Transport in Monolithic Ultrascaled Al-Ge-Al Nanowire Heterostructures.

PubMed

Sistani, Masiar; Staudinger, Philipp; Greil, Johannes; Holzbauer, Martin; Detz, Hermann; Bertagnolli, Emmerich; Lugstein, Alois

2017-08-09

Conductance quantization at room temperature is a key requirement for the utilizing of ballistic transport for, e.g., high-performance, low-power dissipating transistors operating at the upper limit of "on"-state conductance or multivalued logic gates. So far, studying conductance quantization has been restricted to high-mobility materials at ultralow temperatures and requires sophisticated nanostructure formation techniques and precise lithography for contact formation. Utilizing a thermally induced exchange reaction between single-crystalline Ge nanowires and Al pads, we achieved monolithic Al-Ge-Al NW heterostructures with ultrasmall Ge segments contacted by self-aligned quasi one-dimensional crystalline Al leads. By integration in electrostatically modulated back-gated field-effect transistors, we demonstrate the first experimental observation of room temperature quantum ballistic transport in Ge, favorable for integration in complementary metal-oxide-semiconductor platform technology.

Luminescence of quantum-well exciton polaritons from microstructured AlxGa1-xAs-GaAs multiple quantum wells

NASA Astrophysics Data System (ADS)

Kohl, M.; Heitmann, D.; Grambow, P.; Ploog, K.

1988-06-01

Periodic multiple-quantum-well wires have been prepared by etching five-layer quantum-well structures through a holographically prepared mask. The periodicity was 380 nm, the lateral confinement 180 nm, and the quantum-well width 13, nm. The luminescence from these microstructured systems in the frequency regime of the one-electron-one-heavy-hole transition was strongly polarized with the electric field perpendicular to the periodic structure. This effect was caused by the resonantly enhanced emission of quantum-well-exciton (QWE) polaritons. Excitation of QWE polaritons was also observed in reflection measurements on the microstructured samples.

On-chip coherent conversion of photonic quantum entanglement between different degrees of freedom

PubMed Central

Feng, Lan-Tian; Zhang, Ming; Zhou, Zhi-Yuan; Li, Ming; Xiong, Xiao; Yu, Le; Shi, Bao-Sen; Guo, Guo-Ping; Dai, Dao-Xin; Ren, Xi-Feng; Guo, Guang-Can

2016-01-01

In the quantum world, a single particle can have various degrees of freedom to encode quantum information. Controlling multiple degrees of freedom simultaneously is necessary to describe a particle fully and, therefore, to use it more efficiently. Here we introduce the transverse waveguide-mode degree of freedom to quantum photonic integrated circuits, and demonstrate the coherent conversion of a photonic quantum state between path, polarization and transverse waveguide-mode degrees of freedom on a single chip. The preservation of quantum coherence in these conversion processes is proven by single-photon and two-photon quantum interference using a fibre beam splitter or on-chip beam splitters. These results provide us with the ability to control and convert multiple degrees of freedom of photons for quantum photonic integrated circuit-based quantum information process. PMID:27321821

On-chip coherent conversion of photonic quantum entanglement between different degrees of freedom.

PubMed

Feng, Lan-Tian; Zhang, Ming; Zhou, Zhi-Yuan; Li, Ming; Xiong, Xiao; Yu, Le; Shi, Bao-Sen; Guo, Guo-Ping; Dai, Dao-Xin; Ren, Xi-Feng; Guo, Guang-Can

2016-06-20

In the quantum world, a single particle can have various degrees of freedom to encode quantum information. Controlling multiple degrees of freedom simultaneously is necessary to describe a particle fully and, therefore, to use it more efficiently. Here we introduce the transverse waveguide-mode degree of freedom to quantum photonic integrated circuits, and demonstrate the coherent conversion of a photonic quantum state between path, polarization and transverse waveguide-mode degrees of freedom on a single chip. The preservation of quantum coherence in these conversion processes is proven by single-photon and two-photon quantum interference using a fibre beam splitter or on-chip beam splitters. These results provide us with the ability to control and convert multiple degrees of freedom of photons for quantum photonic integrated circuit-based quantum information process.

Quantum Double of Yangian of strange Lie superalgebra Qn and multiplicative formula for universal R-matrix

NASA Astrophysics Data System (ADS)

Stukopin, Vladimir

2018-02-01

Main result is the multiplicative formula for universal R-matrix for Quantum Double of Yangian of strange Lie superalgebra Qn type. We introduce the Quantum Double of the Yangian of the strange Lie superalgebra Qn and define its PBW basis. We compute the Hopf pairing for the generators of the Yangian Double. From the Hopf pairing formulas we derive a factorized multiplicative formula for the universal R-matrix of the Yangian Double of the Lie superalgebra Qn . After them we obtain coefficients in this multiplicative formula for universal R-matrix.

(Al)GaInP/GaAs Tandem Solar Cells for Power Conversion at Elevated Temperature and High Concentration

DOE PAGES

Perl, Emmett E.; Simon, John; Friedman, Daniel J.; ...

2018-01-12

We demonstrate dual-junction (Al)GaInP/GaAs solar cells designed for operation at 400 degrees C and 1000x concentration. For the top junction, we compare (Al)GaInP solar cells with room-temperature bandgaps ranging from 1.9 to 2.0 eV. At 400 degrees C, we find that ~1.9 eV GaInP solar cells have a higher open-circuit voltage and a lower sheet resistance than higher bandgap (Al)GaInP solar cells, giving them a clear advantage in a tandem configuration. Dual-junction GaInP/GaAs solar cells are fabricated, and we show temperature-dependent external quantum efficiency, illuminated current-voltage, and concentrator measurements from 25 degrees C to 400 degrees C. We measure amore » power conversion efficiency of 16.4% +/- 1% at 400 degrees C and 345 suns for the best dual-junction cell, and discuss multiple pathways to improve the performance further. After undergoing a 200 h soak at 400 degrees C, the dual-junction device shows a relative loss in efficiency of only ~1%.« less

(Al)GaInP/GaAs Tandem Solar Cells for Power Conversion at Elevated Temperature and High Concentration

DOE Office of Scientific and Technical Information (OSTI.GOV)

Perl, Emmett E.; Simon, John; Friedman, Daniel J.

We demonstrate dual-junction (Al)GaInP/GaAs solar cells designed for operation at 400 degrees C and 1000x concentration. For the top junction, we compare (Al)GaInP solar cells with room-temperature bandgaps ranging from 1.9 to 2.0 eV. At 400 degrees C, we find that ~1.9 eV GaInP solar cells have a higher open-circuit voltage and a lower sheet resistance than higher bandgap (Al)GaInP solar cells, giving them a clear advantage in a tandem configuration. Dual-junction GaInP/GaAs solar cells are fabricated, and we show temperature-dependent external quantum efficiency, illuminated current-voltage, and concentrator measurements from 25 degrees C to 400 degrees C. We measure amore » power conversion efficiency of 16.4% +/- 1% at 400 degrees C and 345 suns for the best dual-junction cell, and discuss multiple pathways to improve the performance further. After undergoing a 200 h soak at 400 degrees C, the dual-junction device shows a relative loss in efficiency of only ~1%.« less

Using Monte Carlo ray tracing simulations to model the quantum harmonic oscillator modes observed in uranium nitride

DOE Office of Scientific and Technical Information (OSTI.GOV)

Lin, J. Y. Y.; Aczel, Adam A; Abernathy, Douglas L

2014-01-01

Recently an extended series of equally spaced vibrational modes was observed in uranium nitride (UN) by performing neutron spectroscopy measurements using the ARCS and SEQUOIA time-of- flight chopper spectrometers [A.A. Aczel et al, Nature Communications 3, 1124 (2012)]. These modes are well described by 3D isotropic quantum harmonic oscillator (QHO) behavior of the nitrogen atoms, but there are additional contributions to the scattering that complicate the measured response. In an effort to better characterize the observed neutron scattering spectrum of UN, we have performed Monte Carlo ray tracing simulations of the ARCS and SEQUOIA experiments with various sample kernels, accountingmore » for the nitrogen QHO scattering, contributions that arise from the acoustic portion of the partial phonon density of states (PDOS), and multiple scattering. These simulations demonstrate that the U and N motions can be treated independently, and show that multiple scattering contributes an approximate Q-independent background to the spectrum at the oscillator mode positions. Temperature dependent studies of the lowest few oscillator modes have also been made with SEQUOIA, and our simulations indicate that the T-dependence of the scattering from these modes is strongly influenced by the uranium lattice.« less

Quantum Monte Carlo simulations of Ti4 O7 Magnéli phase

NASA Astrophysics Data System (ADS)

Benali, Anouar; Shulenburger, Luke; Krogel, Jaron; Zhong, Xiaoliang; Kent, Paul; Heinonen, Olle

2015-03-01

Ti4O7 is ubiquitous in Ti-oxides. It has been extensively studied, both experimentally and theoretically in the past decades using multiple levels of theories, resulting in multiple diverse results. The latest DFT +SIC methods and state of the art HSE06 hybrid functionals even propose a new anti-ferromagnetic state at low temperature. Using Quantum Monte Carlo (QMC), as implemented in the QMCPACK simulation package, we investigated the electronic and magnetic properties of Ti4O7 at low (120K) and high (298K) temperatures and at different magnetic states. This research used resources of the Argonne Leadership Computing Facility at Argonne National Laboratory, which is supported by the Office of Science of the U.S. Department of Energy under contract DE-AC02-06CH11357. L.S, J.K and P.K were supported through Predictive Theory and Modeling for Materials and Chemical Science program by the Office of Basic Energy Sciences (BES), Department of Energy (DOE) Sandia National Laboratories is a multiprogram laboratory managed and operated by Sandia Corporation, a wholly owned subsidiary of Lockheed Martin Corporation, for the U.S. Department of Energy's National Nuclear Security Administration under Contract No. DE-AC04-94AL85000.

Quantum-engineered interband cascade photovoltaic devices

DOE Office of Scientific and Technical Information (OSTI.GOV)

Razeghi, Manijeh; Tournié, Eric; Brown, Gail J.

2013-12-18

Quantum-engineered multiple stage photovoltaic (PV) devices are explored based on InAs/GaSb/AlSb interband cascade (IC) structures. These ICPV devices employ multiple discrete absorbers that are connected in series by widebandgap unipolar barriers using type-II heterostructure interfaces for facilitating carrier transport between cascade stages similar to IC lasers. The discrete architecture is beneficial for improving the collection efficiency and for spectral splitting by utilizing absorbers with different bandgaps. As such, the photo-voltages from each individual cascade stage in an ICPV device add together, creating a high overall open-circuit voltage, similar to conventional multi-junction tandem solar cells. Furthermore, photo-generated carriers can be collectedmore » with nearly 100% efficiency in each stage. This is because the carriers travel over only a single cascade stage, designed to be shorter than a typical diffusion length. The approach is of significant importance for operation at high temperatures where the diffusion length is reduced. Here, we will present our recent progress in the study of ICPV devices, which includes the demonstration of ICPV devices at room temperature and above with narrow bandgaps (e.g. 0.23 eV) and high open-circuit voltages. © (2013) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.« less

Two methods for measuring Bell nonlocality via local unitary invariants of two-qubit systems in Hong-Ou-Mandel interferometers

NASA Astrophysics Data System (ADS)

Bartkiewicz, Karol; Chimczak, Grzegorz

2018-01-01

We describe a direct method to experimentally determine local two-qubit invariants by performing interferometric measurements on multiple copies of a given two-qubit state. We use this framework to analyze two different kinds of two-qubit invariants of Makhlin and Jing et al. These invariants allow us to fully reconstruct any two-qubit state up to local unitaries. We demonstrate that measuring three invariants is sufficient to find, e.g., the optimal Bell inequality violation. These invariants can be measured with local or nonlocal measurements. We show that the nonlocal strategy that follows from Makhlin's invariants is more resource efficient than local strategy following from the invariants of Jing et al. To measure all of the Makhlin's invariants directly one needs to use both two-qubit singlets and three-qubit W -state projections on multiple copies of the two-qubit state. This problem is equivalent to a coordinate system handedness measurement. We demonstrate that these three-qubit measurements can be performed by utilizing Hong-Ou-Mandel interference, which gives significant speedup in comparison to the classical handedness measurement. Finally, we point to potential applications of our results in quantum secret sharing.

High power single mode 980 nm AlGaInAs/AlGaAs quantum well lasers with a very low threshold current

NASA Astrophysics Data System (ADS)

Zhen, Dong; Cuiluan, Wang; Hongqi, Jing; Suping, Liu; Xiaoyu, Ma

2013-11-01

To achieve low threshold current as well as high single mode output power, a graded index separate confinement heterostructure (GRIN-SCH) AlGaInAs/AlGaAs quantum well laser with an optimized ridge waveguide was fabricated. The threshold current was reduced to 8 mA. An output power of 76 mW was achieved at 100 mA current at room temperature, with a slope efficiency of 0.83 W/A and a horizon divergent angle of 6.3°. The maximum single mode output power of the device reached as high as 450 mW.

V/III ratio effects on high quality InAlAs for quantum cascade laser structures

NASA Astrophysics Data System (ADS)

Demir, Ilkay; Elagoz, Sezai

2017-04-01

In this study we report the V/III ratio effects on growth, structural, optical and doping characteristics of low growth rate (∼1 Å/s) heteroepitaxial Metal Organic Chemical Vapor Deposition (MOCVD) grown InxAl1-xAs layers, a part of Quantum Cascade Laser (QCL) structures, on InP substrate. Especially photoluminescence (PL) properties of InAlAs-InP interface show strong dependence on AsH3 overpressure. We have shown that the V/III ratio with fixed metalorganic precursor flow is a crucial parameter on InxAl1-xAs layers to have a good material quality in terms of crystallinity, optical and electrical characteristics with and without doping.

Control of Emission Color of High Quantum Yield CH3NH3PbBr3 Perovskite Quantum Dots by Precipitation Temperature.

PubMed

Huang, He; Susha, Andrei S; Kershaw, Stephen V; Hung, Tak Fu; Rogach, Andrey L

2015-09-01

Emission color controlled, high quantum yield CH 3 NH 3 PbBr 3 perovskite quantum dots are obtained by changing the temperature of a bad solvent during synthesis. The products for temperatures between 0 and 60 °C have good spectral purity with narrow emission line widths of 28-36 nm, high absolute emission quantum yields of 74% to 93%, and short radiative lifetimes of 13-27 ns.

Effects of quantum well growth temperature on the recombination efficiency of InGaN/GaN multiple quantum wells that emit in the green and blue spectral regions

DOE Office of Scientific and Technical Information (OSTI.GOV)

Hammersley, S.; Dawson, P.; Kappers, M. J.

2015-09-28

InGaN-based light emitting diodes and multiple quantum wells designed to emit in the green spectral region exhibit, in general, lower internal quantum efficiencies than their blue-emitting counter parts, a phenomenon referred to as the “green gap.” One of the main differences between green-emitting and blue-emitting samples is that the quantum well growth temperature is lower for structures designed to emit at longer wavelengths, in order to reduce the effects of In desorption. In this paper, we report on the impact of the quantum well growth temperature on the optical properties of InGaN/GaN multiple quantum wells designed to emit at 460 nmmore » and 530 nm. It was found that for both sets of samples increasing the temperature at which the InGaN quantum well was grown, while maintaining the same indium composition, led to an increase in the internal quantum efficiency measured at 300 K. These increases in internal quantum efficiency are shown to be due reductions in the non-radiative recombination rate which we attribute to reductions in point defect incorporation.« less

Imaging of high-angle annular dark-field scanning transmission electron microscopy and observations of GaN-based violet laser diodes.

PubMed

Shiojiri, M; Saijo, H

2006-09-01

The first part of this paper is devoted to physics, to explain high-angle annular dark-field scanning transmission electron microscopy (HAADF-STEM) imaging and to interpret why HAADF-STEM imaging is incoherent, instructing a strict definition of interference and coherence of electron waves. Next, we present our recent investigations of InGaN/GaN multiple quantum wells and AlGaN/GaN strained-layer superlattice claddings in GaN-based violet laser diodes, which have been performed by HAADF-STEM and high-resolution field-emission gun scanning electron microscopy.

Micro-photoluminescence of GaAs/AlGaAs triple concentric quantum rings

PubMed Central

2011-01-01

A systematic optical study, including micro, ensemble and time resolved photoluminescence of GaAs/AlGaAs triple concentric quantum rings, self-assembled via droplet epitaxy, is presented. Clear emission from localized states belonging to the ring structures is reported. The triple rings show a fast decay dynamics, around 40 ps, which is expected to be useful for ultrafast optical switching applications. PMID:22039893

JPRS Report, Science & Technology, China.

DTIC Science & Technology

1992-08-20

nature of the nuclear medium. QCD [quantum chromodynamic] lattice gauge calculations have predicted the existence of a new phase of the nuclear medium...and A106 octahedra; the atoms Nb and Al are located at the vacants of the octahedra, but a fraction of Al in the lattice is replaced by Nb atoms, and...superlattice and quantum-well lattice dynamics and electron structure, transport processes in superlattice low-dimensionality systems, semiconductor

Linear and nonlinear optical absorption coefficients and refractive index changes in GaN/Al{sub x}Ga{sub (1−x)}N double quantum wells operating at 1.55 μm

DOE Office of Scientific and Technical Information (OSTI.GOV)

Dakhlaoui, Hassen

2015-04-07

In the present paper, the linear and nonlinear optical absorption coefficients and refractive index changes between the ground and the first excited states in double GaN/Al{sub x}Ga{sub (1−x)}N quantum wells are studied theoretically. The electronic energy levels and their corresponding wave functions are obtained by solving Schrödinger-Poisson equations self-consistently within the effective mass approximation. The obtained results show that the optical absorption coefficients and refractive index changes can be red- and blue-shifted through varying the left quantum well width and the aluminum concentration x{sub b2} of the central barrier, respectively. These structural parameters are found to present optimum values formore » carrying out the transition of 0.8 eV (1.55 μm). Furthermore, we show that the desired transition can also be achieved by replacing the GaN in the left quantum well with Al{sub y}Ga{sub (1−y)}N and by varying the aluminum concentration y{sub Al}. The obtained results give a new degree of freedom in optoelectronic device applications such as optical fiber telecommunications operating at (1.55 μm)« less

Near-Infrared Laser Pumped Intersubband THz Laser Gain in InGaAs-AlAsSb-InP Quantum Wells

NASA Technical Reports Server (NTRS)

Liu, An-Sheng; Ning, Cun-Zheng

1999-01-01

We investigate the possibility of using InGaAs-AlAsSb-InP coupled quantum wells to generate THz radiation by means of intersubband optical pumping. We show that large conduction band offsets of these quantum wells make it possible to use conventional near-infrared diode lasers around 1.55 micron as pump sources. Taking into account the pump-probe coherent interaction and the optical nonlinearity for the pump field, we calculate the THz gain of the quantum well structure. We show that resonant Raman scattering enhances the THz gain at low and moderate optical pumping levels. When the pump intensity is strong, the THz gain is reduced by pump-induced population redistribution and pump-probe coherent interactions.

Physics of SrTiO₃-based heterostructures and nanostructures: a review.

PubMed

Pai, Yun-Yi; Tylan-Tyler, Anthony; Irvin, Patrick; Levy, Jeremy

2017-08-30

1 Overview 1 1.1 Introduction 1 1.1.1 Oxide growth techniques are rooted in search for high-Tc superconductors 2 1.1.2 First reports of interface conductivity 2 1.2 2D physics 2 1.3 Emergent properties of oxide heterostructures and nanostructures 3 1.4 Outline 3 2 Relevant properties of SrTiO3 3 2.1 Structural properties and transitions 3 2.2 Ferroelectricity, Paraelectricity and Quantum Paraelectricity 4 2.3 Electronic structure 5 2.4 Defects 6 2.4.1 Oxygen vacancies 6 2.4.2 Terraces 7 2.5 Superconductivity 7 3 SrTiO3-based heterostructures and nanostructures 8 3.1 Varieties of heterostructures 8 3.1.1 SrTiO3 only 9 3.1.2 LaAlO3/SrTiO3 9 3.1.3 Other heterostructures formed with SrTiO3 10 3.2 Thin-film growth 10 3.2.1 Substrates 10 3.2.2 SrTiO3 surface treatment 11 3.2.3 Pulsed Laser Deposition 11 3.2.4 Atomic Layer Deposition 13 3.2.5 Molecular Beam Epitaxy 14 3.2.6 Sputtering 15 3.3 Device Fabrication 15 3.3.1 "Conventional" photolithography - Thickness Modulation, hard masks, etc. 15 3.3.2 Ion beam irradiation 16 3.3.3 Conductive-AFM lithography 16 4 Properties and phase diagram of LaAlO3/SrTiO3 16 4.1 Insulating state 16 4.2 Conducting state 17 4.2.1 Confinement thickness (the depth profile of the 2DEG) 17 4.3 Metal-insulator transition and critical thickness 18 4.3.1 Polar catastrophe ( electronic reconstruction) 18 4.3.2 Oxygen Vacancies 19 4.3.3 Interdiffusion 20 4.3.4 Polar Interdiffusion + oxygen vacancies + antisite pairs 20 4.3.5 Role of surface adsorbates 21 4.3.6 Hidden FE like distortion - Strain induced instability 21 4.4 Structural properties and transitions 21 4.5 Electronic band structure 22 4.5.1 Theory 22 4.5.2 Experiment 23 4.5.3 Lifshitz transition 24 4.6 Defects, doping, and compensation 25 4.7 Magnetism 25 4.7.1 Experimental evidence 25 4.7.2 Two types of magnetism 27 4.7.3 Ferromagnetism 27 4.7.4 Metamagnetism 28 4.8 Superconductivity 28 4.9 Optical properties 29 4.9.1 Photoluminesce experiments 29 4.9.2 Second Harmonic Generation 29 4.10 Coexistence of superconductivity and magnetism 30 4.11 Magnetic and conducting phases 30 5 Quantum transport in LaAlO3/SrTiO3 heterostructures and microstructures 31 5.1 2D transport 31 5.2 Inhomogeneous Transport 31 5.3 Anisotropic Magnetoresistance 32 5.4 Spin-orbit coupling 32 5.5 Anomalous Hall Effect 34 5.6 Shubnikov-de Haas (SdH) Oscillation 35 5.7 Quantum Hall Effect 37 5.8 Spintronic Effects 38 6 Quantum transport in LaAlO3/SrTiO3 nanostructures 39 6.1 Quasi-1D Superconductivity 39 6.2 Universal conductance fluctuations 40 6.3 Dissipationless Electronic Waveguides 40 6.4 Superconducting Quantum Interference Devices (SQUID) 41 6.5 Electron pairing without superconductivity 41 6.6 Tunable Electron-Electron Interaction 42 7 Outlook 43 7.1 Outstanding physics questions 43 7.1.1 Polar catastrophe (not) 43 7.1.2 Coexistence of phases 43 7.1.3 Novel superconducting states (e.g., FFLO, other pairing symmetries) 43 7.1.4 Magnetism mechanism 43 7.1.5 Exotic phases (eg. Majorana physics) 43 7.1.6 Luttinger liquids 44 7.2 Future applications 44 7.2.1 Spintronics 44 7.2.2 Quantum simulation 44 7.2.3 Qubits/quantum computing 44 7.2.4 Sensing 44 8 Figures 45 9 Reference 6. © 2017 IOP Publishing Ltd.

Universality of electronic friction. II. Equivalence of the quantum-classical Liouville equation approach with von Oppen's nonequilibrium Green's function methods out of equilibrium

NASA Astrophysics Data System (ADS)

Dou, Wenjie; Subotnik, Joseph E.

2018-02-01

In a recent publication [W. Dou et al., Phys. Rev. Lett. 119, 046001 (2017), 10.1103/PhysRevLett.119.046001], using the quantum-classical Liouville equation (QCLE), we derived a very general form for the electronic friction felt by a molecule moving near one or many metal surfaces. Moreover, we have already proved the equivalence of the QCLE electronic friction with the Head-Gordon-Tully model as well as a generalized version of von Oppen's nonequilibrium Green's function (NEGF) method at equilibrium [W. Dou and J. E. Subotnik, Phys. Rev. B 96, 104305 (2017), 10.1103/PhysRevB.96.104305]. In the present paper, we now further prove the equivalence between the QCLE friction and the NEGF friction for the case of multiple metal surfaces and an out-of-equilibrium electronic current without electron-electron interactions. The present results reinforce our recent claim that there is only one universal electronic friction tensor arising from the Born-Oppenheimer approximation.

Coherence properties of the 0-π qubit

NASA Astrophysics Data System (ADS)

Groszkowski, Peter; Di Paolo, A.; Grimsmo, A. L.; Blais, A.; Schuster, D. I.; Houck, A. A.; Koch, Jens

2018-04-01

Superconducting circuits rank among some of the most interesting architectures for the implementation of quantum information processing devices. The recently proposed 0-π qubit (Brooks et al 2013 Phys. Rev. A 87 52306) promises increased protection from spontaneous relaxation and dephasing. In this paper we present a detailed theoretical study of the coherence properties of the 0-π device, investigate relevant decoherence channels, and show estimates for achievable coherence times in multiple parameter regimes. In our analysis, we include disorder in circuit parameters, which results in the coupling of the qubit to a low-energy, spurious harmonic mode. We analyze the effects of such coupling on decoherence, in particular dephasing due to photon shot noise, and outline how such a noise channel can be mitigated by appropriate parameter choices. In the end we find that the 0-π qubit performs well and may become an attractive candidate for the implementation of the next-generation superconducting devices for uses in quantum computing and information.

Design optimization for 25 Gbit/s DML InGaAlAs/InGaAsP/InP SL-MQW laser diode incorporating temperature effect

NASA Astrophysics Data System (ADS)

Ke, Cheng; Li, Xun; Xi, Yanping; Yu, Yang

2017-11-01

In this paper, a detailed carrier dynamics model for quantum well lasers is used to study the modulation bandwidth of the directly modulated strained-layer multiple quantum well (SL-MQW) laser. The active region of the directly modulated laser (DML) is optimized in terms of the number of QWs and barrier height. To compromise the device dynamic performance at different operating temperatures, we present an overall optimized design for a 25 Gbps DML under an ambient temperature ranging from 25 to 85°C. To further enhance the modulation bandwidth, we have also proposed a mixed QWs design that increases the 3 dB bandwidth by almost 44% compared to the one without undergoing optimization. The experimental results show that the 3 dB bandwidth of the optimized DML can reach 19 GHz. A clear eye diagram with a bit rate of 25 Gbps was observed at 25°C.

NMR crystallography to probe the breathing effect of the MIL-53(Al) metal-organic framework using solid-state NMR measurements of 13C-27Al distances.

PubMed

Giovine, Raynald; Volkringer, Christophe; Trébosc, Julien; Amoureux, Jean Paul; Loiseau, Thierry; Lafon, Olivier; Pourpoint, Frédérique

2017-03-01

The metal-organic framework MIL-53(Al) (aluminium terephthalate) exhibits a structural transition between two porous structures with large pore (lp) or narrow pore (np) configurations. This transition, called the breathing effect, is observed upon changes in temperature or external pressure, as well as with the adsorption of guest molecules, such as H 2 O, within the pores. We show here how these different pore openings can be detected by observing the dephasing of 13 C magnetization under 13 C- 27 Al dipolar couplings using Rotational-Echo Saturation-Pulse Double-Resonance (RESPDOR) solid-state NMR experiments with Simultaneous Frequency and Amplitude Modulation (SFAM) recoupling. These double-resonance NMR experiments between 13 C and 27 Al nuclei, which have close Larmor frequencies, are feasible thanks to the use of a frequency splitter. The experimental SFAM-RESPDOR signal fractions agree well with those simulated from the MIL-53(Al)-lp and -np crystal structures obtained from powder X-ray diffraction analysis. Hence, these 13 C- 27 Al solid-state NMR experiments validate these structures and confirm their rigidity. A similar agreement is reported for the framework ligands in the as-synthesized (as) MIL-53(Al), in which the pores contain free ligands. Furthermore, in this case, 13 C-{ 27 Al} SFAM-RESPDOR experiments allow an estimation of the average distance between the free ligands and the 27 Al nuclei of the framework.

282-nm AlGaN-based deep ultraviolet light-emitting diodes with improved performance on nano-patterned sapphire substrates

NASA Astrophysics Data System (ADS)

Dong, Peng; Yan, Jianchang; Wang, Junxi; Zhang, Yun; Geng, Chong; Wei, Tongbo; Cong, Peipei; Zhang, Yiyun; Zeng, Jianping; Tian, Yingdong; Sun, Lili; Yan, Qingfeng; Li, Jinmin; Fan, Shunfei; Qin, Zhixin

2013-06-01

We first report AlGaN-based deep ultraviolet light-emitting diodes (UV-LEDs) grown on nano-patterned sapphire substrates (NPSS) prepared through a nanosphere lithography technique. The AlN coalescence thickness on NPSS is only 3 μm due to AlN's nano-scaled lateral growth, which also leads to low dislocation densities in AlN and epi-layers above. On NPSS, the light-output power of a 282-nm UV-LED reaches 3.03 mW at 20 mA with external quantum efficiency of 3.45%, exhibiting 98% better performance than that on flat sapphire. Temperature-dependent photoluminescence reveals this significant enhancement to be a combination of higher internal quantum efficiency and higher light extraction efficiency.

Microstructure and Properties of the Al-27Si/Cu/Al-50Si Joint Brazed by the Partial Transient Liquid Phase Bonding

NASA Astrophysics Data System (ADS)

Sun, Qingzhu; Wang, Haibo; Yang, Cheng

2018-06-01

Al-27Si and Al-50Si were brazed by using a thin Cu interlayer. The metallurgical bonding without obvious defects is achieved, and a wide brazing seam consisting of fine eutectic structures and coarse Si particles is formed in the Al-27Si/Cu/Al-50Si joint. The deposition of Si element in the liquid phases during solidification results in the formation of the larger Si particles and ultra-small Si particles in the brazing seam. The shear strength of the joint reaches 63 MPa.

Microstructure and Properties of the Al-27Si/Cu/Al-50Si Joint Brazed by the Partial Transient Liquid Phase Bonding

NASA Astrophysics Data System (ADS)

Sun, Qingzhu; Wang, Haibo; Yang, Cheng

2018-04-01

Al-27Si and Al-50Si were brazed by using a thin Cu interlayer. The metallurgical bonding without obvious defects is achieved, and a wide brazing seam consisting of fine eutectic structures and coarse Si particles is formed in the Al-27Si/Cu/Al-50Si joint. The deposition of Si element in the liquid phases during solidification results in the formation of the larger Si particles and ultra-small Si particles in the brazing seam. The shear strength of the joint reaches 63 MPa.

Quantum Sets and Clifford Algebras

NASA Astrophysics Data System (ADS)

Finkelstein, David

1982-06-01

The mathematical language presently used for quantum physics is a high-level language. As a lowest-level or basic language I construct a quantum set theory in three stages: (1) Classical set theory, formulated as a Clifford algebra of “ S numbers” generated by a single monadic operation, “bracing,” Br = {…}. (2) Indefinite set theory, a modification of set theory dealing with the modal logical concept of possibility. (3) Quantum set theory. The quantum set is constructed from the null set by the familiar quantum techniques of tensor product and antisymmetrization. There are both a Clifford and a Grassmann algebra with sets as basis elements. Rank and cardinality operators are analogous to Schroedinger coordinates of the theory, in that they are multiplication or “ Q-type” operators. “ P-type” operators analogous to Schroedinger momenta, in that they transform the Q-type quantities, are bracing (Br), Clifford multiplication by a set X, and the creator of X, represented by Grassmann multiplication c( X) by the set X. Br and its adjoint Br* form a Bose-Einstein canonical pair, and c( X) and its adjoint c( X)* form a Fermi-Dirac or anticanonical pair. Many coefficient number systems can be employed in this quantization. I use the integers for a discrete quantum theory, with the usual complex quantum theory as limit. Quantum set theory may be applied to a quantum time space and a quantum automaton.

Hyperspherical Slater determinant approach to few-body fractional quantum Hall states

DOE Office of Scientific and Technical Information (OSTI.GOV)

Yan, Bin, E-mail: yanbin@purdue.edu; Wooten, Rachel E.; Daily, Kevin M.

2017-05-15

In a recent study (Daily et al., 2015), a hyperspherical approach has been developed to study few-body fractional quantum Hall states. This method has been successfully applied to the exploration of few boson and fermion problems in the quantum Hall region, as well as the study of inter-Landau level collective excitations (Rittenhouse et al., 2016; Wooten et al., 2016). However, the hyperspherical method as it is normally implemented requires a subsidiary (anti-)symmetrization process, which limits its computational effectiveness. The present work overcomes these difficulties and extends the power of this method by implementing a representation of the hyperspherical many-body basismore » space in terms of Slater determinants of single particle eigenfunctions. A clear connection between the hyperspherical representation and the conventional single particle picture is presented, along with a compact operator representation of the theoretical framework. - Highlights: • A hyperspherical method has been implemented to study the quantum Hall effect. • The hyperspherical many-body basis space is represented with Slater determinants. • Example numerical studies of the 4- and 8-electron systems are presented.« less

Field-effect transistor having a superlattice channel and high carrier velocities at high applied fields

DOEpatents

Chaffin, deceased, Roger J.; Dawson, Ralph; Fritz, Ian J.; Osbourn, Gordon C.; Zipperian, Thomas E.

1989-01-01

A field effect transistor comprises a semiconductor having a source, a drain, a channel and a gate in operational relationship. The semiconductor is a strained layer superlattice comprising alternating quantum well and barrier layers, the quantum well layers and barrier layers being selected from the group of layer pairs consisting of InGaAs/AlGaAs, InAs/InAlGaAs, and InAs/InAlAsP. The layer thicknesses of the quantum well and barrier layers are sufficiently thin that the alternating layers constitute a superlattice which has a superlattice conduction band energy level structure in k-vector space which includes a lowest energy .GAMMA.-valley and a next lowest energy L-valley, each k-vector corresponding to one of the orthogonal directions defined by the planes of said layers and the directions perpendicular thereto. The layer thicknesses of the quantum well layers are selected to provide a superlattice L.sub.2D -valley which has a shape which is substantially more two-dimensional than that of said bulk L-valley.

Comment on “Surface electromagnetic wave equations in a warm magnetized quantum plasma” [Phys. Plasmas 21, 072114 (2014)

DOE Office of Scientific and Technical Information (OSTI.GOV)

Moradi, Afshin, E-mail: a.moradi@kut.ac.ir

2016-07-15

In a recent article [C. Li et al., Phys. Plasmas 21, 072114 (2014)], Li et al. studied the propagation of surface waves on a magnetized quantum plasma half-space in the Voigt configuration (in this case, the magnetic field is parallel to the surface but is perpendicular to the direction of propagation). Here, we present a fresh look at the problem and obtain a new form of dispersion relation of surface waves of the system. We find that our new dispersion relation does not agree with the result obtained by Li et al.

Control over dark current densities and cutoff wavelengths of GaAs/AlGaAs QWIP grown by multi-wafer MBE reactor

NASA Astrophysics Data System (ADS)

Roodenko, K.; Choi, K. K.; Clark, K. P.; Fraser, E. D.; Vargason, K. W.; Kuo, J.-M.; Kao, Y.-C.; Pinsukanjana, P. R.

2016-09-01

Performance of quantum well infrared photodetector (QWIP) device parameters such as detector cutoff wavelength and the dark current density depend strongly on the quality and the control of the epitaxy material growth. In this work, we report on a methodology to precisely control these critical material parameters for long wavelength infrared (LWIR) GaAs/AlGaAs QWIP epi wafers grown by multi-wafer production Molecular beam epitaxy (MBE). Critical growth parameters such as quantum well (QW) thickness, AlGaAs composition and QW doping level are discussed.

Realization of the revival of silenced echo (ROSE) quantum memory scheme in orthogonal geometry

NASA Astrophysics Data System (ADS)

Minnegaliev, M. M.; Gerasimov, K. I.; Urmancheev, R. V.; Moiseev, S. A.; Chanelière, T.; Louchet-Chauvet, A.

2018-02-01

We demonstrated quantum memory scheme on revival of silenced echo in orthogonal geometry in Tm3+: Y3Al5O12 crystal. The retrieval efficiency of ˜14% was demonstrated with the 36 µs storage time. In this scheme for the first time we also implemented a suppression of the revived echo signal by applying an external electric field and the echo signal has been recovered on demand if we then applied a second electric pulse with opposite polarity. This technique opens the possibilities for realizing addressing in multi-qubit quantum memory in Tm3+: Y3Al5O12 crystal.

DOE Office of Scientific and Technical Information (OSTI.GOV)

Zybert, M.; Marchweka, M.; Sheregii, E. M.

Landau levels and shallow donor states in multiple GaAs/AlGaAs quantum wells (MQWs) are investigated by means of the cyclotron resonance at mega-gauss magnetic fields. Measurements of magneto-optical transitions were performed in pulsed fields up to 140 T and temperatures from 6 to 300 K. The 14 x 14 P.p band model for GaAs is used to interpret free-electron transitions in a magnetic field. Temperature behavior of the observed resonant structure indicates, in addition to the free-electron Landau states, contributions of magneto-donor states in the GaAs wells and possibly in the AlGaAs barriers. The magneto-donor energies are calculated using a variationalmore » procedure suitable for high magnetic fields and accounting for conduction band nonparabolicity in GaAs. It is shown that the above states, including their spin splitting, allow one to interpret the observed mengeto-optical transitions in MQWs in the middle infrared region. Our experimental and theoretical results at very high magnetic fields are consistent with the picture used previously for GaAs/AlGaAs MQWs at lower magnetic fields.« less

Enhanced Electro-Static Discharge Endurance of GaN-Based Light-Emitting Diodes with Specially Designed Electron Blocking Layer

NASA Astrophysics Data System (ADS)

Wang, Chunxia; Zhang, Xiong; Guo, Hao; Chen, Hongjun; Wang, Shuchang; Yang, Hongquan; Cui, Yiping

2013-10-01

GaN-based light-emitting diodes (LEDs) with specially designed electron blocking layers (EBLs) between the multiple quantum wells (MQWs) and the top p-GaN layer have been developed. The EBLs consist of Mg-doped p-AlGaN/GaN superlattice (SL) with the layer thickness of p-AlGaN varied from 1 to 10 nm and the layer thickness of p-GaN fixed at 1 nm in this study. It was found that under a 2000 V reverse bias voltage condition, the electro-static discharge (ESD) yield increased from 61.98 to 99.51% as the thickness of p-AlGaN in the EBLs was increased from 1 to 10 nm. Since the ESD yield was 97.80%, and maximum value for LEDs' light output power (LOP) and minimum value for the forward voltage (Vf) were achieved when the thickness of p-AlGaN in the EBLs was 9 nm with a 20 mA injection current, it was concluded that the p-AlGaN/GaN SL EBLs with the combination of 9-nm-thick p-AlGaN and 1-nm-thick p-GaN would be beneficial to the fabrication of the GaN-based LEDs with high brightness, high ESD endurance, and low Vf.

Optical characterization of type-I to type-II band alignment transition in GaAs/Al x Ga1-x As quantum rings grown by droplet epitaxy

NASA Astrophysics Data System (ADS)

Su, Linlin; Wang, Ying; Guo, Qinglin; Li, Xiaowei; Wang, Shufang; Fu, Guangsheng; Mazur, Yuriy I.; E Ware, Morgan; Salamo, Gregory J.; Liang, Baolai; Huffaker, Diana L.

2017-08-01

Optical properties of GaAs/Al x Ga1-x As quantum rings (QRs) grown on GaAs (1 0 0) by droplet epitaxy have been investigated as a function of the Al-composition in the Al x Ga1-x As barrier. A transition from type-I to type-II band alignment is observed for the QRs via photoluminescence (PL) and time-resolved photoluminescence (TRPL) measurements. While x  ⩽  0.45, the QR PL spectra show a blue-shift and an increasing intensity with increasing Al-composition, revealing the enhancement of quantum confinement in the QRs with type-I band alignment. While x  ⩾  0.60, the characteristic large blue-shift with excitation intensity and the much longer lifetime indicate the realization of a type-II band alignment. Due to the height fluctuation of QR structures grown by droplet epitaxy mode, it is not the large blue-shift of emission energy, but the long lifetime that becomes the more important feature to identify the type-II band alignment.

Limiting scattering processes in high-mobility InSb quantum wells grown on GaSb buffer systems

NASA Astrophysics Data System (ADS)

Lehner, Ch. A.; Tschirky, T.; Ihn, T.; Dietsche, W.; Keller, J.; Fält, S.; Wegscheider, W.

2018-05-01

We present molecular beam epitaxial grown single- and double-side δ -doped InAlSb/InSb quantum wells with varying distances down to 50 nm to the surface on GaSb metamorphic buffers. We analyze the surface morphology as well as the impact of the crystalline quality on the electron transport. Comparing growth on GaSb and GaAs substrates indicates that the structural integrity of our InSb quantum wells is solely determined by the growth conditions at the GaSb/InAlSb transition and the InAlSb barrier growth. The two-dimensional electron gas samples show high mobilities of up to 349 000 cm2/Vs at cryogenic temperatures and 58 000 cm2/Vs at room temperature. With the calculated Dingle ratio and a transport lifetime model, ionized impurities predominantly remote from the quantum well are identified as the dominant source of scattering events. The analysis of the well-pronounced Shubnikov-de Haas oscillations reveals a high spin-orbit coupling with an effective g -factor of -38.4 in our samples. Along with the smooth surfaces and long mean free paths demonstrated, our InSb quantum wells are increasingly competitive for nanoscale implementations of Majorana mode devices.

Constraint of the Astrophysical Al 26 g ( p , γ ) Si 27 Destruction Rate at Stellar Temperatures

DOE PAGES

Pain, S. D.; Bardayan, D. W.; Blackmon, J. C.; ...

2015-05-28

The Galactic 1.809-MeV γ-ray signature from the β decay of 26gAl is a dominant target of γ-ray astronomy, of which a significant component is understood to originate from massive stars. The 26gAl(p,γ) 27Si reaction is a major destruction pathway for 26gAl at stellar temperatures, but the reaction rate is poorly constrained due to uncertainties in the strengths of low-lying resonances in 27Si. The 26gAl (d,p) 27Al reaction has been employed in inverse kinematics to determine the spectroscopic factors, and hence resonance strengths, of proton resonances in 27Si via mirror symmetry. Finally, the strength of the 127-keV resonance is found tomore » be a factor of 4 higher than the previously adopted upper limit, and the upper limit for the 68-keV resonance has been reduced by an order of magnitude, considerably constraining the 26gAl destruction rate at stellar temperatures.« less

Comparison of the extraction and determination of serum exosome and miRNA in serum and the detection of miR-27a-3p in serum exosome of ALS patients.

PubMed

Xu, Qian; Zhao, Yuying; Zhou, Xiaoyan; Luan, Jing; Cui, Yazhou; Han, Jinxiang

2018-02-01

Amyotrophic Lateral Sclerosis (ALS) is a muscle-bone degenerative disease, which lacks a specific index for diagnosis. In our previous studies, we found that exosomes mediated the interaction mechanism between muscle and bone at the cellular level, and myoblast exosomes can transfer miR-27a-3p to promote osteoblast mineralization. Therefore, we suppose that the expression of miR-27a-3p in the serum exosomes of ALS patients also changes. In this study, we used healthy human serum as a sample to find out the conditions and methods for extraction and detection. Then through comparison of the expression of miR-27a-3p in the serum exosomes of 10 ALS patients and healthy subjects, we found that in the ALS patients miR-27a-3p was down-regulated, and may be involved in the development of ALS, and therefore has potential as a reference for the diagnosis of ALS in the clinic.

Enhancement of optical polarization degree of AlGaN quantum wells by using staggered structure.

PubMed

Wang, Weiying; Lu, Huimin; Fu, Lei; He, Chenguang; Wang, Mingxing; Tang, Ning; Xu, Fujun; Yu, Tongjun; Ge, Weikun; Shen, Bo

2016-08-08

Staggered AlGaN quantum wells (QWs) are designed to enhance the transverse-electric (TE) polarized optical emission in deep ultraviolet (DUV) light- emitting diodes (LED). The optical polarization properties of the conventional and staggered AlGaN QWs are investigated by a theoretical model based on the k·p method as well as polarized photoluminescence (PL) measurements. Based on an analysis of the valence subbands and momentum matrix elements, it is found that AlGaN QWs with step-function-like Al content in QWs offers much stronger TE polarized emission in comparison to that from conventional AlGaN QWs. Experimental results show that the degree of the PL polarization at room temperature can be enhanced from 20.8% of conventional AlGaN QWs to 40.2% of staggered AlGaN QWs grown by MOCVD, which is in good agreement with the theoretical simulation. It suggests that polarization band engineering via staggered AlGaN QWs can be well applied in high efficiency AlGaN-based DUV LEDs.

Impact of an AlAs window layer upon the optical properties of Al x Ga1-x As photodiodes

NASA Astrophysics Data System (ADS)

Kang, T.; Chen, X. J.; Johnson, E. B.; Christian, J. F.; Lee, K.; Hammig, M. D.

2016-05-01

Recently developed advanced scintillators, which have the ability to distinguish gamma-ray interaction events from those that accompany neutron impact, require improved quantum efficiency in the blue to near UV region of the spectrum. We utilize GaAs/Al0.8Ga0.2As photodiode elements as components in a wide band-gap solid-state photomultiplier as a lower-cost, lower logistical burden, and higher quantum efficiency replacement for the photomultiplier tube. An AlAs window layer is employed as a means to increase the diode’s optical performance. Relative to structures absent the window layer, simulations and measurements demonstrate that the AlAs layer produces a spatial coincidence between regions of large drift fields with regions of high photon absorption. In addition to the AlAs layer, secondary ion mass spectrometry measurements show that an unexpected high degree of inter-diffusion of GaAs and AlAs quenches the photon-detection efficiency, a decrease that can be avoided by its post-growth removal. With the AlAs layer, the peak external quantum efficiency of 49% is achieved at 450 nm with 10 V reverse bias, which does not fully deplete the device. Simulations show that full depletion can result in efficiencies exceeding 90%. In order to enhance the optical response, a simple anti-reflective coating layer is designed using the existing passivation layer components that successfully minimizes the reflection at the wavelength range of interest (300 nm-500 nm).

NREL, University of Washington Scientists Elevate Quantum Dot Solar Cell

Science.gov Websites

World Record to 13.4 Percent | NREL | News | NREL NREL, University of Washington Scientists Elevate Quantum Dot Solar Cell World Record to 13.4 Percent News Release: NREL, University of Washington Scientists Elevate Quantum Dot Solar Cell World Record to 13.4 Percent October 27, 2017 Researchers at the

Deterministic quantum splitter based on time-reversed Hong-Ou-Mandel interference

DOE Office of Scientific and Technical Information (OSTI.GOV)

Chen, Jun; Lee, Kim Fook; Kumar, Prem

2007-09-15

By utilizing a fiber-based indistinguishable photon-pair source in the 1.55 {mu}m telecommunications band [J. Chen et al., Opt. Lett. 31, 2798 (2006)], we present the first, to the best of our knowledge, deterministic quantum splitter based on the principle of time-reversed Hong-Ou-Mandel quantum interference. The deterministically separated identical photons' indistinguishability is then verified by using a conventional Hong-Ou-Mandel quantum interference, which exhibits a near-unity dip visibility of 94{+-}1%, making this quantum splitter useful for various quantum information processing applications.

Distribution of 26Al in the CR chondrite chondrule-forming region of the protoplanetary disk

NASA Astrophysics Data System (ADS)

Schrader, Devin L.; Nagashima, Kazuhide; Krot, Alexander N.; Ogliore, Ryan C.; Yin, Qing-Zhu; Amelin, Yuri; Stirling, Claudine H.; Kaltenbach, Angela

2017-03-01

We report on the mineralogy, petrography, and in situ measured oxygen- and magnesium-isotope compositions of eight porphyritic chondrules (seven FeO-poor and one FeO-rich) from the Renazzo-like carbonaceous (CR) chondrites Graves Nunataks 95229, Grosvenor Mountains 03116, Pecora Escarpment 91082, and Queen Alexandra Range 99177, which experienced minor aqueous alteration and very mild thermal metamorphism. We find no evidence that these processes modified the oxygen- or Al-Mg isotope systematics of chondrules in these meteorites. Olivine, low-Ca pyroxene, and plagioclase within an individual chondrule have similar O-isotope compositions, suggesting crystallization from isotopically uniform melts. The only exceptions are relict grains in two of the chondrules; these grains are 16O-enriched relative to phenocrysts of the host chondrules. Only the FeO-rich chondrule shows a resolvable excesses of 26Mg, corresponding to an inferred initial 26Al/27Al ratio [(26Al/27Al)0] of (2.5 ± 1.6) × 10-6 (±2SE). Combining these results with the previously reported Al-Mg isotope systematics of CR chondrules (Nagashima et al., 2014, Geochem. J. 48, 561), 7 of 22 chondrules (32%) measured show resolvable excesses of 26Mg; the presence of excess 26Mg does not correlate with the FeO content of chondrule silicates. In contrast, virtually all chondrules in weakly metamorphosed (petrologic type 3.0-3.1) unequilibrated ordinary chondrites (UOCs), Ornans-like carbonaceous (CO) chondrites, and the ungrouped carbonaceous chondrite Acfer 094 show resolvable excesses of 26Mg. The inferred (26Al/27Al)0 in CR chondrules with resolvable excesses of 26Mg range from (1.0 ± 0.4) × 10-6 to (6.3 ± 0.9) × 10-6, which is typically lower than (26Al/27Al)0 in the majority of chondrules from UOCs, COs, and Acfer 094. Based on the inferred (26Al/27Al)0, three populations of CR chondrules are recognized; the population characterized by low (26Al/27Al)0 (<3 × 10-6) is dominant. There are no noticeable trends with major and minor element or O-isotope compositions between these populations. The weighted mean (26Al/27Al)0 of 22 CR chondrules measured is (1.8 ± 0.3) × 10-6. An apparent agreement between the 26Al-26Mg ages (using weighted mean value) and the revised (using 238U/235U ratio for bulk CR chondrites of 137.7789 ± 0.0085) 207Pb-206Pb age of a set of chondrules from CR chondrites (Amelin et al., 2002, Science297, 1678) is consistent with the initial 26Al/27Al ratio in the CR chondrite chondrule-forming region at the canonical level (∼5.2 × 10-5), allowing the use of 26Al-26Mg systematics as a chronometer for CR chondrules. To prove chronological significance of 26Al for CR chondrules, measurements of Al-Mg and U-Pb isotope systematics on individual chondrules are required. The presence of several generations among CR chondrules indicates some chondrules that accreted into the CR chondrite parent asteroid avoided melting by later chondrule-forming events, suggesting chondrule-forming processes may have occurred on relatively limited spatial scales. Accretion of the CR chondrite parent body occurred at >4.0-0.3+0.5 Ma after the formation of CAIs with the canonical 26Al/27Al ratio, although rapid accretion after formation of the major population of CR chondrules is not required by our data.

Study of the 26Alm (d ,p )27Al Reaction and the Influence of the 26 0+ Isomer on the Destruction of 26Al in the Galaxy

NASA Astrophysics Data System (ADS)

Almaraz-Calderon, S.; Rehm, K. E.; Gerken, N.; Avila, M. L.; Kay, B. P.; Talwar, R.; Ayangeakaa, A. D.; Bottoni, S.; Chen, A. A.; Deibel, C. M.; Dickerson, C.; Hanselman, K.; Hoffman, C. R.; Jiang, C. L.; Kuvin, S. A.; Nusair, O.; Pardo, R. C.; Santiago-Gonzalez, D.; Sethi, J.; Ugalde, C.

2017-08-01

The existence of 26 (t1 /2=7.17 ×105 yr ) in the interstellar medium provides a direct confirmation of ongoing nucleosynthesis in the Galaxy. The presence of a low-lying 0+ isomer (26m ), however, severely complicates the astrophysical calculations. We present for the first time a study of the 26Al m(d ,p ) 27Al reaction using an isomeric 26Al beam. The selectivity of this reaction allowed the study of ℓ=0 transfers to T =1 /2 , and T =3 /2 states in 27Al. Mirror symmetry arguments were then used to constrain the 26Al m(p ,γ ) 27Si reaction rate and provide an experimentally determined upper limit of the rate for the destruction of isomeric 26Al via radiative proton capture reactions, which is expected to dominate the destruction path of 26Alm in asymptotic giant branch stars, classical novae, and core collapse supernovae.

Characterizing nonclassical correlations via local quantum Fisher information

NASA Astrophysics Data System (ADS)

Kim, Sunho; Li, Longsuo; Kumar, Asutosh; Wu, Junde

2018-03-01

We define two ways of quantifying the quantum correlations based on quantum Fisher information (QFI) in order to study the quantum correlations as a resource in quantum metrology. By investigating the hierarchy of measurement-induced Fisher information introduced in Lu et al. [X. M. Lu, S. Luo, and C. H. Oh, Phys. Rev. A 86, 022342 (2012), 10.1103/PhysRevA.86.022342], we show that the presence of quantum correlation can be confirmed by the difference of the Fisher information induced by the measurements of two hierarchies. In particular, the quantitative quantum correlations based on QFI coincide with the geometric discord for pure quantum states.

Seaworthy Quantum Key Distribution Design and Validation (SEAKEY)

DTIC Science & Technology

2015-08-07

absorption and scattering using MODTRAN [ Berk et al.]. Thus, channel efficiency is expressed as follows: G=GT×exp[−αL], (10) where exp[−αL] is...34 New Journal of Physics 13, 013003 (2011). [Scarani et al.] Valerio Scarani, Helle Bechmann-Pasquinucci, Nicolas J . Cerf, Miloslav Dušek, Norbert...050303 (2005). [Renner and Cirac] R. Renner and J . I. Cirac, de Finetti representation theorem for infinite-dimensional quantum systems and

Scanned gate microscopy of inter-edge channel scattering in the quantum Hall regime

NASA Astrophysics Data System (ADS)

Woodside, Michael T.; Vale, Chris; McEuen, Paul L.; Kadow, C.; Maranowski, K. D.; Gossard, A. C.

2000-03-01

Novel scanned probe techniques have recently been used to study in detail the microscopic properties of 2D electron gases in the quantum Hall regime [1]. We report local measurements of the scattering between edge states in a quantum Hall conductor with non-equilibrium edge state populations. Using an atomic force microscope (AFM) tip as a local gate to perturb the edge states, we find that the scattering is dominated by individual, microscopic scattering sites, which we directly image and characterise. The dependence of the scattering on the AFM tip voltage reveals that it involves tunneling both through quasi-bound impurity states and through disorder-induced weak links between the edge states. [1] S. H. Tessmer et al., Nature 392, 51 (1998); K. L. McCormick et al., Phys. Rev. B 59, 4654 (1999); A. Yacoby et al., Solid State Comm. 111, 1 (1999).

Free Quantum Field Theory from Quantum Cellular Automata

NASA Astrophysics Data System (ADS)

Bisio, Alessandro; D'Ariano, Giacomo Mauro; Perinotti, Paolo; Tosini, Alessandro

2015-10-01

After leading to a new axiomatic derivation of quantum theory (see D'Ariano et al. in Found Phys, 2015), the new informational paradigm is entering the domain of quantum field theory, suggesting a quantum automata framework that can be regarded as an extension of quantum field theory to including an hypothetical Planck scale, and with the usual quantum field theory recovered in the relativistic limit of small wave-vectors. Being derived from simple principles (linearity, unitarity, locality, homogeneity, isotropy, and minimality of dimension), the automata theory is quantum ab-initio, and does not assume Lorentz covariance and mechanical notions. Being discrete it can describe localized states and measurements (unmanageable by quantum field theory), solving all the issues plaguing field theory originated from the continuum. These features make the theory an ideal framework for quantum gravity, with relativistic covariance and space-time emergent solely from the interactions, and not assumed a priori. The paper presents a synthetic derivation of the automata theory, showing how the principles lead to a description in terms of a quantum automaton over a Cayley graph of a group. Restricting to Abelian groups we show how the automata recover the Weyl, Dirac and Maxwell dynamics in the relativistic limit. We conclude with some new routes about the more general scenario of non-Abelian Cayley graphs. The phenomenology arising from the automata theory in the ultra-relativistic domain and the analysis of corresponding distorted Lorentz covariance is reviewed in Bisio et al. (Found Phys 2015, in this same issue).

Multi-user quantum key distribution with entangled photons from an AlGaAs chip

NASA Astrophysics Data System (ADS)

Autebert, C.; Trapateau, J.; Orieux, A.; Lemaître, A.; Gomez-Carbonell, C.; Diamanti, E.; Zaquine, I.; Ducci, S.

2016-12-01

In view of real-world applications of quantum information technologies, the combination of miniature quantum resources with existing fibre networks is a crucial issue. Among such resources, on-chip entangled photon sources play a central role for applications spanning quantum communications, computing and metrology. Here, we use a semiconductor source of entangled photons operating at room temperature in conjunction with standard telecom components to demonstrate multi-user quantum key distribution, a core protocol for securing communications in quantum networks. The source consists of an AlGaAs chip-emitting polarisation entangled photon pairs over a large bandwidth in the main telecom band around 1550 nm without the use of any off-chip compensation or interferometric scheme; the photon pairs are directly launched into a dense wavelength division multiplexer (DWDM) and secret keys are distributed between several pairs of users communicating through different channels. We achieve a visibility measured after the DWDM of 87% and show long-distance key distribution using a 50-km standard telecom fibre link between two network users. These results illustrate a promising route to practical, resource-efficient implementations adapted to quantum network infrastructures.

Glassy formation ability, magnetic properties and magnetocaloric effect in Al27Cu18Er55 amorphous ribbon

NASA Astrophysics Data System (ADS)

Li, Lingwei; Xu, Chi; Yuan, Ye; Zhou, Shengqiang

2018-05-01

In this work, we have fabricated the Al27Cu18Er55 amorphous ribbon with good glassy formation ability by melt-spinning technology. A broad paramagnetic (PM) to ferromagnetic (FM) transition (second ordered) together with a large reversible magnetocaloric effect (MCE) in Al27Cu18Er55 amorphous ribbon was observed around the Curie temperature TC ∼ 11 K. Under the magnetic field change (ΔH of 0-7 T, the values of MCE parameter of the maximum magnetic entropy change (-ΔSMmax) and refrigerant capacity (RC) for Al27Cu18Er55 amorphous ribbon reach 21.4 J/kg K and 599 J/kg, respectively. The outstanding glass forming ability as well as the excellent magneto-caloric properties indicate that Al27Cu18Er55 amorphous could be a good candidate for low temperature magnetic refrigeration.

Design of a Voltage Tunable Broadband Quantum Well Infrared Photodetector

DTIC Science & Technology

2002-06-01

1 B. PROGRESS OF QWIPS ...converting some of the incident photons to an electric signal. A Quantum Well Infrared Photodetector ( QWIP ) consists of a stack of quantum wells...arsenide (GaAs ) and aluminum gallium arsenide ( AsGaAl xx −1 ) with different aluminum compositions allowed the fabrication of novel QWIP detectors

Device-independent secret-key-rate analysis for quantum repeaters

NASA Astrophysics Data System (ADS)

Holz, Timo; Kampermann, Hermann; Bruß, Dagmar

2018-01-01

The device-independent approach to quantum key distribution (QKD) aims to establish a secret key between two or more parties with untrusted devices, potentially under full control of a quantum adversary. The performance of a QKD protocol can be quantified by the secret key rate, which can be lower bounded via the violation of an appropriate Bell inequality in a setup with untrusted devices. We study secret key rates in the device-independent scenario for different quantum repeater setups and compare them to their device-dependent analogon. The quantum repeater setups under consideration are the original protocol by Briegel et al. [Phys. Rev. Lett. 81, 5932 (1998), 10.1103/PhysRevLett.81.5932] and the hybrid quantum repeater protocol by van Loock et al. [Phys. Rev. Lett. 96, 240501 (2006), 10.1103/PhysRevLett.96.240501]. For a given repeater scheme and a given QKD protocol, the secret key rate depends on a variety of parameters, such as the gate quality or the detector efficiency. We systematically analyze the impact of these parameters and suggest optimized strategies.

Influence of broadening and high-injection effects on GaAs-AlGaAs quantum well lasers

DOE Office of Scientific and Technical Information (OSTI.GOV)

Blood, P.; Colak, S.; Kucharska, A.I.

1988-08-01

The authors have calculated gain spectra and gain-current relations for GaAs-AlGaAs quantum well lasers using a model which incorporates a phenomenological description of bandgap narrowing due to many-body effects at high injection, transmission broadening by a carrier-density-dependent intraband scattering process, and broadening of the density of states function by fluctuations in the well width. The justification for including all these phenomena is made by examining spontaneous emission spectra observed through contact windows on quantum well layers. Using reasonable values of the parameters describing these effects, the model predicts correctly the observed lengthening of the laser emission wavelength with respect tomore » the absorption edge and correctly describes the variation of this wavelength, which they have observed for a set of devices with different numbers of quantum wells and the same well width. For a single GaAs quantum well laser 25 A wide, with the same parameters, the model predicts an increase in threshold current by a factor of 2.5 compared to an ideal quantum well without these effects.« less

Multi-dimensional photonic states from a quantum dot

NASA Astrophysics Data System (ADS)

Lee, J. P.; Bennett, A. J.; Stevenson, R. M.; Ellis, D. J. P.; Farrer, I.; Ritchie, D. A.; Shields, A. J.

2018-04-01

Quantum states superposed across multiple particles or degrees of freedom offer an advantage in the development of quantum technologies. Creating these states deterministically and with high efficiency is an ongoing challenge. A promising approach is the repeated excitation of multi-level quantum emitters, which have been shown to naturally generate light with quantum statistics. Here we describe how to create one class of higher dimensional quantum state, a so called W-state, which is superposed across multiple time bins. We do this by repeated Raman scattering of photons from a charged quantum dot in a pillar microcavity. We show this method can be scaled to larger dimensions with no reduction in coherence or single-photon character. We explain how to extend this work to enable the deterministic creation of arbitrary time-bin encoded qudits.

Quantum gambling using mesoscopic ring qubits

NASA Astrophysics Data System (ADS)

Pakuła, Ireneusz

2007-07-01

Quantum Game Theory provides us with new tools for practising games and some other risk related enterprices like, for example, gambling. The two party gambling protocol presented by Goldenberg {\\it et al} is one of the simplest yet still hard to implement applications of Quantum Game Theory. We propose potential physical realisation of the quantum gambling protocol with use of three mesoscopic ring qubits. We point out problems in implementation of such game.

Carrier multiplication detected through transient photocurrent in device-grade films of lead selenide quantum dots

DOE PAGES

Gao, Jianbo; Fidler, Andrew F.; Klimov, Victor I.

2015-09-08

In carrier multiplication, the absorption of a single photon results in two or more electron–hole pairs. Quantum dots are promising materials for implementing carrier multiplication principles in real-life technologies. So far, however, most of research in this area has focused on optical studies of solution samples with yet to be proven relevance to practical devices. We report ultra-fast electro-optical studies of device-grade films of electronically coupled quantum dots that allow us to observe multiplication directly in the photocurrent. Our studies help rationalize previous results from both optical spectroscopy and steady-state photocurrent measurements and also provide new insights into effects ofmore » electric field and ligand treatments on multiexciton yields. Importantly, we demonstrate that using appropriate chemical treatments of the films, extra charges produced by carrier multiplication can be extracted from the quantum dots before they are lost to Auger recombination and hence can contribute to photocurrent of practical devices.« less

Carrier multiplication detected through transient photocurrent in device-grade films of lead selenide quantum dots

PubMed Central

Gao, Jianbo; Fidler, Andrew F.; Klimov, Victor I.

2015-01-01

In carrier multiplication, the absorption of a single photon results in two or more electron–hole pairs. Quantum dots are promising materials for implementing carrier multiplication principles in real-life technologies. So far, however, most of research in this area has focused on optical studies of solution samples with yet to be proven relevance to practical devices. Here we report ultrafast electro-optical studies of device-grade films of electronically coupled quantum dots that allow us to observe multiplication directly in the photocurrent. Our studies help rationalize previous results from both optical spectroscopy and steady-state photocurrent measurements and also provide new insights into effects of electric field and ligand treatments on multiexciton yields. Importantly, we demonstrate that using appropriate chemical treatments of the films, extra charges produced by carrier multiplication can be extracted from the quantum dots before they are lost to Auger recombination and hence can contribute to photocurrent of practical devices. PMID:26345390

Quantum chemical investigations of AlN-doped C60 for use as a nano-biosensor in detection of mispairing between DNA bases.

PubMed

Siddiqui, Shamoon Ahmad; Bouarissa, Nadir; Rasheed, Tabish; Al-Hajry, A

2014-12-01

Quantum chemical calculations were carried out to study the electronic structure and stability of adenine-thymine and the rare tautomer of adenine-thymine base pairs along with their Cu 2+ complexes and their interactions with AlN-modified fullerene (C58AlN) using Density Functional Theory (B3LYP method). Since, these two forms of base pairs and their Cu 2+ complexes have almost similar electronic structures, their chemical differentiation is an extremely difficult task. In this investigation, we have observed that AlN-doped C 60 could be used as a potentially viable nanoscale sensor to detect these two base pairs as well as their Cu2+ complexes.

Design Issues of GaAs and AlGaAs Delta-Doped p-i-n Quantum-Well APD's

NASA Technical Reports Server (NTRS)

Wang, Yang

1994-01-01

We examine the basic design issues in the optimization of GaAs delta-doped and AlGAs delta-doped quantum-well avalanche photodiode (APD) structures using a theoretical analysis based on an ensemble Monte Carlo simulation. The devices are variations of the p-i-n doped quantum-well structure previously described in the literature. They have the same low-noise, high-gain and high-bandwidth features as the p-i-n doped quantum-well device. However, the use of delta doping provides far greater control or the doping concentrations within each stage possibly enhancing the extent to which the device can be depleted. As a result, it is expected that the proposed devices will operate at higher gain levels (at very low noise) than devices previously developed.

Mobility in excess of 106 cm2/V s in InAs quantum wells grown on lattice mismatched InP substrates

NASA Astrophysics Data System (ADS)

Hatke, A. T.; Wang, T.; Thomas, C.; Gardner, G. C.; Manfra, M. J.

2017-10-01

We investigate the transport properties of a two-dimensional electron gas residing in strained composite quantum wells of In0.75Ga0.25As/InAs/In0.75Ga0.25As cladded with In0.75Al0.25As barriers grown metamorphically on insulating InP substrates. By optimizing the widths of the In0.75Ga0.25As layers, the In0.75Al0.25As barrier, and the InAs quantum well, we demonstrate mobility in excess of 1 ×106 cm2/V s. Mobility vs. density data indicate that scattering is dominated by a residual three dimensional distribution of charged impurities. We extract the effective Rashba parameter and spin-orbit length for these composite quantum wells.

Titanium nitride as a seed layer for Heusler compounds

DOE Office of Scientific and Technical Information (OSTI.GOV)

Niesen, Alessia, E-mail: aniesen@physik.uni-bielefeld.de; Glas, Manuel; Ludwig, Jana

Titanium nitride (TiN) shows low resistivity at room temperature (27 μΩ cm), high thermal stability and thus has the potential to serve as seed layer in magnetic tunnel junctions. High quality TiN thin films with regard to the crystallographic and electrical properties were grown and characterized by x-ray diffraction and 4-terminal transport measurements. Element specific x-ray absorption spectroscopy revealed pure TiN inside the thin films. To investigate the influence of a TiN seed layer on a ferro(i)magnetic bottom electrode in magnetic tunnel junctions, an out-of-plane magnetized Mn{sub 2.45}Ga as well as in- and out-of-plane magnetized Co{sub 2}FeAl thin films were depositedmore » on a TiN buffer, respectively. The magnetic properties were investigated using a superconducting quantum interference device and anomalous Hall effect for Mn{sub 2.45}Ga. Magneto optical Kerr effect measurements were carried out to investigate the magnetic properties of Co{sub 2}FeAl. TiN buffered Mn{sub 2.45}Ga thin films showed higher coercivity and squareness ratio compared to unbuffered samples. The Heusler compound Co{sub 2}FeAl showed already good crystallinity when grown at room temperature on a TiN seed-layer.« less

Fabrication of high-performance UVC photodiodes by Al+3 ion adjustment in AZO/Si Heterostructures

NASA Astrophysics Data System (ADS)

Efafi, Babak; Mousavi, Seyedeh Soraya; Majlesara, Mohamad Hossein; Ghafary, Bijan; Sajad, Batool

2018-07-01

In this research, fabrication of high-performance UVC photodiodes based on Al: ZnO thin films is reported. AZO thin films were prepared through sol-gel based chemical routes (using organic precursors) followed by a spin coating method. The layers play a role of the n-type semiconductor deposited on the p-type silicon substrate which formed a p-n heterojunction. Optimizing the percentage of dopants, salt concentration, as well as deposition conditions, is essential for achieving high efficiency and reliable devices. For this aim, different samples were characterized under illumination of an ultraviolet source (254 nm, 268.27 μWcm-2). Then, I-V curves and photoresponsivity of the samples were recorded. A comparison between the results indicates that the sample prepared with a soil concentration of 1 M zinc acetate contains about 2 at. % aluminum has the highest responsivity among the others. Also, studying the photoluminescence spectra of the optimized sample demonstrates that it is significantly sensitive to the wavelength of 260 NM in UVC region. Moreover, the photocurrent to dark current ratio of 1.6 × 103, was measured for the most sensitive sample (with 2 at. % Al). In addition, the highest amount of quantum efficiency about 81% was also determined for this sample.

Non-equilibrium Green's function calculation of AlGaAs-well-based and GaSb-based terahertz quantum cascade laser structures

DOE Office of Scientific and Technical Information (OSTI.GOV)

Yasuda, H., E-mail: yasuda@nict.go.jp; Hosako, I.

2015-03-16

We investigate the performance of terahertz quantum cascade lasers (THz-QCLs) based on Al{sub x}Ga{sub 1−x}As/Al{sub y}Ga{sub 1−y}As and GaSb/AlGaSb material systems to realize higher-temperature operation. Calculations with the non-equilibrium Green's function method reveal that the AlGaAs-well-based THz-QCLs do not show improved performance, mainly because of alloy scattering in the ternary compound semiconductor. The GaSb-based THz-QCLs offer clear advantages over GaAs-based THz-QCLs. Weaker longitudinal optical phonon–electron interaction in GaSb produces higher peaks in the spectral functions of the lasing levels, which enables more electrons to be accumulated in the upper lasing level.

Diode-Laser Pumped Far-Infrared Local Oscillator Based on Semiconductor Quantum Wells

NASA Technical Reports Server (NTRS)

Kolokolov, K.; Li, J.; Ning, C. Z.; Larrabee, D. C.; Tang, J.; Khodaparast, G.; Kono, J.; Sasa, S.; Inoue, M.; Biegel, Bryan A. (Technical Monitor)

2002-01-01

The contents include: 1) Tetrahertz Field: A Technology Gap; 2) Existing THZ Sources and Shortcomings; 3) Applications of A THZ Laser; 4) Previous Optical Pumped LW Generations; 5) Optically Pumped Sb based Intersubband Generation Whys; 6) InGaAs/InP/AlAsSb QWs; 7) Raman Enhanced Optical Gain; 8) Pump Intensity Dependence of THZ Gain; 9) Pump-Probe Interaction Induced Raman Shift; 10) THZ Laser Gain in InGaAs/InP/AlAsSb QWs; 11) Diode-Laser Pumped Difference Frequency Generation (InGaAs/InP/AlAsSb QWs); 12) 6.1 Angstrom Semiconductor Quantum Wells; 13) InAs/GaSb/AlSb Nanostructures; 14) InAs/AlSb Double QWs: DFG Scheme; 15) Sb-Based Triple QWs: Laser Scheme; and 16) Exciton State Pumped THZ Generation. This paper is presented in viewgraph form.

Quantum state engineering with ultra-short-period (AlN)m/(GaN)n superlattices for narrowband deep-ultraviolet detection.

PubMed

Gao, Na; Lin, Wei; Chen, Xue; Huang, Kai; Li, Shuping; Li, Jinchai; Chen, Hangyang; Yang, Xu; Ji, Li; Yu, Edward T; Kang, Junyong

2014-12-21

Ultra-short-period (AlN)m/(GaN)n superlattices with tunable well and barrier atomic layer numbers were grown by metal-organic vapour phase epitaxy, and employed to demonstrate narrowband deep ultraviolet photodetection. High-resolution transmission electron microscopy and X-ray reciprocal space mapping confirm that superlattices containing well-defined, coherently strained GaN and AlN layers as thin as two atomic layers (∼ 0.5 nm) were grown. Theoretical and experimental results demonstrate that an optical absorption band as narrow as 9 nm (210 meV) at deep-ultraviolet wavelengths can be produced, and is attributable to interband transitions between quantum states along the [0001] direction in ultrathin GaN atomic layers isolated by AlN barriers. The absorption wavelength can be precisely engineered by adjusting the thickness of the GaN atomic layers because of the quantum confinement effect. These results represent a major advance towards the realization of wavelength selectable and narrowband photodetectors in the deep-ultraviolet region without any additional optical filters.

DOE Office of Scientific and Technical Information (OSTI.GOV)

Beigi, Salman

Sandwiched (quantum) α-Rényi divergence has been recently defined in the independent works of Wilde et al. [“Strong converse for the classical capacity of entanglement-breaking channels,” preprint http://arxiv.org/abs/arXiv:1306.1586 (2013)] and Müller-Lennert et al. [“On quantum Rényi entropies: a new definition, some properties and several conjectures,” preprint http://arxiv.org/abs/arXiv:1306.3142v1 (2013)]. This new quantum divergence has already found applications in quantum information theory. Here we further investigate properties of this new quantum divergence. In particular, we show that sandwiched α-Rényi divergence satisfies the data processing inequality for all values of α > 1. Moreover we prove that α-Holevo information, a variant of Holevo informationmore » defined in terms of sandwiched α-Rényi divergence, is super-additive. Our results are based on Hölder's inequality, the Riesz-Thorin theorem and ideas from the theory of complex interpolation. We also employ Sion's minimax theorem.« less

Quantum teleportation through noisy channels with multi-qubit GHZ states

NASA Astrophysics Data System (ADS)

Espoukeh, Pakhshan; Pedram, Pouria

2014-08-01

We investigate two-party quantum teleportation through noisy channels for multi-qubit Greenberger-Horne-Zeilinger (GHZ) states and find which state loses less quantum information in the process. The dynamics of states is described by the master equation with the noisy channels that lead to the quantum channels to be mixed states. We analytically solve the Lindblad equation for -qubit GHZ states where Lindblad operators correspond to the Pauli matrices and describe the decoherence of states. Using the average fidelity, we show that 3GHZ state is more robust than GHZ state under most noisy channels. However, GHZ state preserves same quantum information with respect to Einstein-Podolsky-Rosen and 3GHZ states where the noise is in direction in which the fidelity remains unchanged. We explicitly show that Jung et al.'s conjecture (Phys Rev A 78:012312, 2008), namely "average fidelity with same-axis noisy channels is in general larger than average fidelity with different-axes noisy channels," is not valid for 3GHZ and 4GHZ states.

Sandwiched Rényi divergence satisfies data processing inequality

DOE Office of Scientific and Technical Information (OSTI.GOV)

Beigi, Salman

2013-12-15

Sandwiched (quantum) α-Rényi divergence has been recently defined in the independent works of Wilde et al. [“Strong converse for the classical capacity of entanglement-breaking channels,” preprint http://arxiv.org/abs/arXiv:1306.1586 (2013)] and Müller-Lennert et al. [“On quantum Rényi entropies: a new definition, some properties and several conjectures,” preprint http://arxiv.org/abs/arXiv:1306.3142v1 (2013)]. This new quantum divergence has already found applications in quantum information theory. Here we further investigate properties of this new quantum divergence. In particular, we show that sandwiched α-Rényi divergence satisfies the data processing inequality for all values of α > 1. Moreover we prove that α-Holevo information, a variant of Holevo informationmore » defined in terms of sandwiched α-Rényi divergence, is super-additive. Our results are based on Hölder's inequality, the Riesz-Thorin theorem and ideas from the theory of complex interpolation. We also employ Sion's minimax theorem.« less

Uncooled EuSbTe3 photodetector highly sensitive from ultraviolet to terahertz frequencies

NASA Astrophysics Data System (ADS)

Niu, Ying Y.; Wu, Dong; Su, Yu Q.; Zhu, Hai; Wang, Biao; Wang, Ying X.; Zhao, Zi R.; Zheng, Ping; Niu, Jia S.; Zhou, Hui B.; Wei, Jian; Wang, Nan L.

2018-01-01

Light probe from Uv to THz is critical in photoelectronics and has great applications ranging from imaging, communication to medicine (Woodward et al 2002 Phys. Med. Biol. 47 3853-63 Pospischil et al 2013 Nat. Photon. 7 892-6 Martyniuk and Rogalski 2003 Prog. Quantum Electron. 27 59-210). However, the room temperature ultrabroadband photodetection across visible down to far-infrared is still challenging. The challenging arises mainly from the lack of suitable photoactive materials. Because that conventional semiconductors, such as silicon, have their photosensitive properties cut off by the bandgap and are transparent to spectrum at long-wavelength infrared side (Ciupa and Rogalski 1997 Opto-Electron. Rev. 5 257-66 Tonouchi 2007 Nat. Photon. 1 97-105 Sizov and Rogalski 2010 Prog. Quantum Electron. 34 278-347 Kinch 2000 J. Electron. Mater. 29 809-17). Comparatively, the dielectrics with very narrow band-gap but maintain the semiconductor-like electrical conduction would have priorities for ultrabroadband photodetection. Here we report on EuSbTe3 is highly sensitive from ultraviolet directly to terahertz (THz) at room temperature. High photoresponsivities 1-8 A W-1 reached in our prototype EuSbTe3 detectors with low noise equivalent power (NEP) recorded, for instances ~150 pW · Hz-1/2 (at λ  =  532 nm) and ~0.6 nW · Hz-1/2 (at λ  =  118.8 µm) respectively. Our results demonstrate a promising system with direct photosensitivity extending well into THz regime at room temperature, shed new light on exploring more sophisticated multi-band photoelectronics.

Nurse stress at two different organizational settings in Alexandria.

PubMed

Zaghloul, Ashraf Az; Abou El Enein, Nagwa Y

2009-04-15

The objective of the study was to explore the difference in stress levels among nurses working at two different health care organizations and the determinants of nurse stress within each organization. Job stress is defined as the harmful emotional and physical reactions resulting from the interactions between the worker and her/his work environment where the demands of the job exceed the worker's capabilities and resources. A convenient sample of nurses in two hospitals in Alexandria; Shark Al Madina (n = 120) and Karmouz (n = 170) hospitals. All nurses present at the time of the study were approached to be included in the study. The response rate for Shark Al Madina hospital was 94% and for Karmouz hospital, 71%. Data collection took place using a nurse stress questionnaire previously developed and tested for validity and reliability to measure stress in clinical nursing practice. The 5% level of significance was used throughout the statistical analysis for all relevant tests. The highest mean stress scores were the same for both hospitals. The dimension of coping with new situations was 2.7 ± 0.6 at Shark Al Madina hospital and was 2.5 ± 0.7 at Karmouz hospital while the dimension of job security was 2.7 ± 0.6 and 2.5 ± 0.7 at Shark Al Madina and Karmouz hospitals, respectively. Stepwise multiple regression for Shark Al Madina hospital model revealed workload (β = 1.38), security (β = 5.04), and shortage of support staff (β = 3.39). For the Karmouz hospital model, stepwise multiple regression revealed security (β = 4.78) and shortage of resources (β = 3.66). Stressors among nurses appear to be the same despite the differences in organizational or hierarchical structure where they work or the type of consumer they serve. It is important to reduce occupational stress in nurses and to strengthen their coping resources to prevent nurse burnout. This could be achieved with job redesign, modification of shift work systems, and by offering occupational health education as well as assurance regarding job security especially during the global financial crisis.

Nurse stress at two different organizational settings in Alexandria

PubMed Central

Zaghloul, Ashraf AZ; Abou El Enein, Nagwa Y

2009-01-01

Objective: The objective of the study was to explore the difference in stress levels among nurses working at two different health care organizations and the determinants of nurse stress within each organization. Job stress is defined as the harmful emotional and physical reactions resulting from the interactions between the worker and her/his work environment where the demands of the job exceed the worker’s capabilities and resources. Methodology: A convenient sample of nurses in two hospitals in Alexandria; Shark Al Madina (n = 120) and Karmouz (n = 170) hospitals. All nurses present at the time of the study were approached to be included in the study. The response rate for Shark Al Madina hospital was 94% and for Karmouz hospital, 71%. Data collection took place using a nurse stress questionnaire previously developed and tested for validity and reliability to measure stress in clinical nursing practice. The 5% level of significance was used throughout the statistical analysis for all relevant tests. Results: The highest mean stress scores were the same for both hospitals. The dimension of coping with new situations was 2.7 ± 0.6 at Shark Al Madina hospital and was 2.5 ± 0.7 at Karmouz hospital while the dimension of job security was 2.7 ± 0.6 and 2.5 ± 0.7 at Shark Al Madina and Karmouz hospitals, respectively. Stepwise multiple regression for Shark Al Madina hospital model revealed workload (β = 1.38), security (β = 5.04), and shortage of support staff (β = 3.39). For the Karmouz hospital model, stepwise multiple regression revealed security (β = 4.78) and shortage of resources (β = 3.66). Conclusion: Stressors among nurses appear to be the same despite the differences in organizational or hierarchical structure where they work or the type of consumer they serve. It is important to reduce occupational stress in nurses and to strengthen their coping resources to prevent nurse burnout. This could be achieved with job redesign, modification of shift work systems, and by offering occupational health education as well as assurance regarding job security especially during the global financial crisis. PMID:21197346

A Generalized Information Theoretical Model for Quantum Secret Sharing

NASA Astrophysics Data System (ADS)

Bai, Chen-Ming; Li, Zhi-Hui; Xu, Ting-Ting; Li, Yong-Ming

2016-11-01

An information theoretical model for quantum secret sharing was introduced by H. Imai et al. (Quantum Inf. Comput. 5(1), 69-80 2005), which was analyzed by quantum information theory. In this paper, we analyze this information theoretical model using the properties of the quantum access structure. By the analysis we propose a generalized model definition for the quantum secret sharing schemes. In our model, there are more quantum access structures which can be realized by our generalized quantum secret sharing schemes than those of the previous one. In addition, we also analyse two kinds of important quantum access structures to illustrate the existence and rationality for the generalized quantum secret sharing schemes and consider the security of the scheme by simple examples.

Terahertz GaAs/AlAs quantum-cascade lasers

DOE Office of Scientific and Technical Information (OSTI.GOV)

Schrottke, L., E-mail: lutz@pdi-berlin.de; Lü, X.; Rozas, G.

2016-03-07

We have realized GaAs/AlAs quantum-cascade lasers operating at 4.75 THz exhibiting more than three times higher wall plug efficiencies than GaAs/Al{sub 0.25}Ga{sub 0.75}As lasers with an almost identical design. At the same time, the threshold current density at 10 K is reduced from about 350 A/cm{sup 2} for the GaAs/Al{sub 0.25}Ga{sub 0.75}As laser to about 120 A/cm{sup 2} for the GaAs/AlAs laser. Substituting AlAs for Al{sub 0.25}Ga{sub 0.75}As barriers leads to a larger energy separation between the subbands reducing the probability for leakage currents through parasitic states and for reabsorption of the laser light. The higher barriers allow for a shift of themore » quasi-continuum of states to much higher energies. The use of a binary barrier material may also reduce detrimental effects due to the expected composition fluctuations in ternary alloys.« less

Aluminum-Magnesium and Oxygen Isotope Study of Relict Ca-Al-rich Inclusions in Chondrules

NASA Astrophysics Data System (ADS)

Krot, Alexander N.; McKeegan, Kevin D.; Huss, Gary R.; Liffman, Kurt; Sahijpal, Sandeep; Hutcheon, Ian D.; Srinivasan, Gopalan; Bischoff, Adolph; Keil, Klaus

2006-03-01

Relict Ca-Al-rich inclusions (CAIs) in chondrules crystallized before their host chondrules and were subsequently partly melted together with chondrule precursors during chondrule formation. Like most CAIs, relict CAIs are 16O enriched (Δ17O<-20‰) compared to their host chondrules (Δ17O>-9‰). Hibonite in a relict CAI from the ungrouped carbonaceous chondrite Adelaide has a large excess of radiogenic 26Mg (26Mg*) from the decay of 26Al, corresponding to an initial 26Al/27Al ratio [(26Al/27Al)I] of (3.7+/-0.5)×10-5 in contrast, melilite in this CAI and plagioclase in the host chondrule show no evidence for 26Mg* [(26Al/27Al)I of <5×10-6]. Grossite in a relict CAI from the CH carbonaceous chondrite PAT 91546 has little 26Mg*, corresponding to a (26Al/27Al)I of (1.7+/-1.3)×10-6. Three other relict CAIs and their host chondrules from the ungrouped carbonaceous chondrite Acfer 094, CH chondrite Acfer 182, and H3.4 ordinary chondrite Sharps do not have detectable 26Mg* [(26Al/27Al)I<1×10-5, <(4-6)×10-6, and <1.3×10-5, respectively]. Isotopic data combined with mineralogical observations suggest that relict CAIs formed in an 16O-rich gaseous reservoir before their host chondrules, which originated in an 16O-poor gas. The Adelaide CAI was incorporated into its host chondrule after 26Al had mostly decayed, at least 2 Myr after the CAI formed, and this event reset 26Al-26Mg systematics.

Editorial . Quantum fluctuations and coherence in optical and atomic structures

NASA Astrophysics Data System (ADS)

Eschner, Jürgen; Gatti, Alessandra; Maître, Agnès; Morigi, Giovanna

2003-03-01

From simple interference fringes, over molecular wave packets, to nonlinear optical patterns - the fundamental interaction between light and matter leads to the formation of structures in many areas of atomic and optical physics. Sophisticated technology in experimental quantum optics, as well as modern computational tools available to theorists, have led to spectacular achievements in the investigation of quantum structures. This special issue is dedicated to recent developments in this area. It presents a selection of examples where quantum dynamics, fluctuations, and coherence generate structures in time or in space or where such structures are observed experimentally. The examples range from coherence phenomena in condensed matter, over atoms in optical structures, entanglement in light and matter, to quantum patterns in nonlinear optics and quantum imaging. The combination of such seemingly diverse subjects formed the basis of a successful European TMR network, "Quantum Structures" (visit http://cnqo.phys.strath.ac.uk/~gianluca/QSTRUCT/). This special issue partly re.ects the results and collaborations of the network, going however well beyond its scope by including contributions from a global community and from many related topics which were not addressed directly in the network. The aim of this issue is to present side by side these di.erent topics, all of which are loosely summarized under quantum structures, to highlight their common aspects, their di.erences, and the progress which resulted from the mutual exchange of results, methods, and knowledge. To guide the reader, we have organized the articles into subsections which follow a rough division into structures in material systems and structures in optical .elds. Nevertheless, in the following introduction we point out connections between the contributions which go beyond these usual criteria, thus highlighting the truly interdisciplinary nature of quantum structures. Much of the progress in atom optics has been generated by the application of concepts from wave optics to matter waves. An example is the contribution by Franke-Arnold et al. The authors investigate the coherence properties of two trapped cold atoms using concepts developed in wave optics. Nevertheless, novel features appear in this system due to the quantum statistics - as atoms may be bosons or fermions - and due to interactions. Matter waves find a spectacular manifestation in Bose-Einstein condensates (BECs) of cold dilute atomic gases. Several concepts of wave optics, like the laser, have been discussed in relation to BECs, and the .eld of atom optics with BECs is rapidly developing. The similarity between the theoretical description of a weakly interacting BEC with that of a non-linear optical system has motivated a series of experiments that led to the observation of, e.g., solitons, vortices and vortex crystallization in matter waves. In this context, the paper by Josopait et al. describes the dynamics of a Bose-Einstein condensate containing a vortex. The vortex stability is discussed as a function of the interparticle interaction, which can be tuned using Feshbach resonances, and the dynamics of the BEC reflected by an atomic mirror is investigated. Non-linear optics merges with atomic physics also in a relatively new research area which aims at quantum non-linear optics with cold atomic gases. Labeyrie et al. use a dense, laser-cooled atomic gas as a non-linear medium for light propagation, and discuss the conditions for observing optical patterns in the transmitted beam. Pattern formation in non-linear optical media is one of the numerous forms of self-organization that these systems display, including also turbulence and optical solitons. With respects to other physical systems, where these phenomena are commonly observed, optical systems are however special: at optical frequencies thermal .uctuations are negligible and do not hide the presence of quantum .uctuations, even at room temperature. Remarkably, the interplay between non-linearity and quantum noise leads to novel phenomena, including optical patterns driven by quantum noise, quantum images, non-classical spatio-temporal correlations, and spatial quantum entanglement. Quantum images are an example of spatial structures dominated by quantum noise, where the structure is absent at a classical level and only proper correlation functions of quantum fluctuations reveal the presence of a regular spatial order. Hoyuelos et al. describe an example of such an image, which is formed in the cross section of the light emitted by an optical parametric oscillator, close to but below the threshold for a square pattern formation. The optical parametric oscillator is also studied in the paper by Rabbiosi et al. which describes the onset of a spatial structure consisting of arrays of localized peaks (cavity solitons) in the transverse cross section of the signal beam. This represents an example of a "disorder to order" transition mediated by quantum noise, where the ordered arrays of solitons are selected among the many possible stable states, only thanks to the presence of quantum noise. As the study of the dynamics of quantum .uctuations in spatially extended systems is a nontraditional subject in quantum optics, alternative techniques of theoretical analysis are needed. The paper by Zambrini et al. proposes an approach based on the use of phase-space representations, in particular of the Q-function with its associated nonlinear Langevin equations. This method provides a full description of the transition from a quantum image to a classical structure through a modulation instability. The Q-representation is also used in a different physical system, the dynamics of the electrons in a driven Helium atom, in the paper by Schlagheck and Buchleitner. Here the authors investigate the quantum manifestations of order and disorder in the motion of the electrons, identifying correspondences between features of the classical phase space and the quantum dynamics. In optical patterns the structure and stability are critically determined by the type of non-linearity of the medium where light propagates, and by the cavity geometry. In atom optics, spatial atomic patterns can be created by light potentials, in particular by arrangements of suitably polarized laser beams which form an optical lattice. The atoms experience mechanical forces arising from the gradient of the light potential. Depending on the tuning of the lasers with respect to the driven atomic transition, these light forces can have a strong or negligible dissipative component, leading to incoherent or coherent motional dynamics. Atomic motion in optical lattices is experimentally investigated in the contributions by Carminati et al. and Jersblad et al. The first article investigates motion-induced resonances in a three-dimensional optical lattice which are observed through pumpprobe laser spectroscopy. The latter contribution studies the effect of the lattice geometry on the atomic steady-state by measuring velocity distributions. The creation of more complex light structures is the subject of the paper by Ellmann et al., where the realization of a double optical lattice is discussed. Such lattices may open up the possibility of coherent manipulation of the atoms in the individual potential wells. An alternative way to structure atoms spatially is discussed by Grabowski and Pfau: here, a regular arrangement of magnetic and magneto-optical traps for ultracold atoms above a surface is described and experimentally observed, where the lattice con.guration is determined by the direction of currents in wire segments beneath the surface. In a different physical systems, semiconductor quantum dots, Jacak et al. study the coupling of arti.cial atoms with the collective excitations of the bulk material in which they are embedded, and investigate coherent and incoherent effects due to this interaction. The presence of correlations at the quantum level leads naturally to the issue of entanglement. This is an exclusive feature of the quantum world, which represents a valuable resource for quantum information processing and for high-precision measurements. The de.nition and criteria for measuring entanglement have been traditionally formulated within the Hilbert-space formalism (the quantum state formalism). However, quantum structures are intrinsically multi-mode systems, for which the Hilbert-space approach is often unpractical and cumbersome. More appealing are the "classical looking" phase space descriptions, where it is hence of great importance to reformulate concepts such as entanglement or Bell inequalities. The paper by Santos addresses the general problem of characterizing the entanglement properties of an electromagnetic field in the language of Q-representation. Entanglement involving the spatial modes of the electromagnetic field carrying orbital angular momentum provides new degrees of freedom and could play an important role in the field of quantum information, since such non-classical states enable the possibility of multichannel communications. The paper by Barbosa discusses quantum states of twin photons produced by parametric down-conversion and entangled in polarization and orbital angular momentum. The issue of entanglement is intrinsically connected to decoherence, and to the transition from the quantum to the classical world. In particular, massive systems are characterized by strong interactions with the environment, and at room temperature they usually exhibit classical behaviour. In this context, the paper by Karlsson discusses the decay of quantum correlations of protons and positive muons in condensed matter, a system characterized by strong coupling to the environment, and proposes experiments where such quantum correlations could be measured. Mancini et al. investigate macroscopic manifestations of quantum features, presenting a proposal for entangling the macroscopic oscillation modes of two cavity mirrors by coupling them to an optical cavity mode. This kind of continuous-variable quantum entanglement may find applications in highprecision measurements, like in atomic force microscopy or gravity wave detection. The question of entanglement for high-precision measurements is also addressed by the paper of Yurtsever et al. which discusses entanglement between matter waves, and proposes the use of entangled atom pairs for a highly sensitive quantum gravity gradiometer. Besides their fundamental interest as a manifestation of quantum .uctuations, spatial quantum correlations in optical beams find their most natural and promising applications in the field of image processing and, more in general, of parallel processing of information. This has opened a new chapter of quantum optics that has been given the name "quantum imaging". In this context, one of the .rst achievements have been the so-called entangled two-photon imaging experiments. This is a technique that exploits the quantum entanglement of a two-photon state to retrieve information about a remote object. In the typical set-up, one photon out of a pair produced by spontaneous parametric down-conversion is used to probe an object, while the other provides a reference. The image of the object emerges in the coincidence counting rate registered as a function of the second photon position. The paper by Shih offers an extensive review of fundamental aspects linked to the entangled two-photon imaging phenomena. It illustrates how quantum imaging techniques may improve classical spatial resolution and presents some of their potential applications for lithography and other microsystem fabrication technologies. A different view on the problem is offered by the paper of Tan et al., which reformulates the two-photon quantum imaging theory from the point of view of retrodictive quantum theory. Since long, quantum noise has been known to represent a limit in high-precision optical measurements. In this context, the contribution by Eschner discusses a single trapped atom probing an optical field and shows that the quantum noise in the atomic motion poses the ultimate limit to the achievable resolution. Recently, it was recognized that quantum noise affects also our ability to resolve an optical image or to detect a small displacement of an optical beam. Properly synthesized multi-mode quantum states are able to circumvent the quantum noise limit and to improve our resolution capabilities in measuring beam displacements. The paper by Barnett et al. shows the similarities between longitudinal phase shifts and transverse beam displacements measurements. Like in interferometry, the sensitivity in the transverse displacement measurement is ultimately limited by the quantum nature of light and can be improved by the use of specific non classical states. The problem of realizing a multi-mode squeezed state is addressed by the paper of Petsas et al. It discusses a realistic implementation of parametric down-conversion in a confocal cavity, able to produce a significant amount of squeezing in small portions of the signal beam cross section. Quantum imaging with macroscopic light beams is a rather new subject of investigation, which represents a non-trivial challenge from the point of view of experimental implementations. One of the main problems is posed by detectors, which should be able to resolve the spatial features of the detected beam with a sensitivity in the photon number measurement beyond the shot noise level. The calibrated CCD camera developed by Jiang et al. makes it possible to get rid of electronic noise or spatial inhomogeneities, a.ecting most of the spatially resolved detectors, and allows the retrieval of spatial shot noise in its full dynamic range. We hope that this special issue helps stimulating further collaborations and fruitful scientific exchange between and beyond the presented fields. We would like to thank the authors for their contributions and the referees for their time and their thoroughness. Our sincerest thanks go to Solange Guéhot in the EPJ D editorial office for very efficiently taking care of all administrative matters. Jürgen Eschner, Institut für Experimentalphysik, Universität Innsbruck, Technikerstr. 25, 6020 Innsbruck, Austria Alessandra Gatti, Istituto Nazionale per la Fisica della Materia, Unitá di Como, Via Valleggio 11, 22100 Como, Italy Agnàs Maītre, Laboratoire Kastler-Brossel, Université Pierre et Marie Curie, 4 place Jussieu, 75252 Paris Cedex 05, France Giovanna Morigi, Abteilung Quantenphysik, Universitát Ulm, Albert-Einstein Allee 11, 89069 Ulm, Germany

Single-shot secure quantum network coding on butterfly network with free public communication

NASA Astrophysics Data System (ADS)

Owari, Masaki; Kato, Go; Hayashi, Masahito

2018-01-01

Quantum network coding on the butterfly network has been studied as a typical example of quantum multiple cast network. We propose a secure quantum network code for the butterfly network with free public classical communication in the multiple unicast setting under restricted eavesdropper’s power. This protocol certainly transmits quantum states when there is no attack. We also show the secrecy with shared randomness as additional resource when the eavesdropper wiretaps one of the channels in the butterfly network and also derives the information sending through public classical communication. Our protocol does not require verification process, which ensures single-shot security.

EARLY SOLAR NEBULA CONDENSATES WITH CANONICAL, NOT SUPRACANONICAL, INITIAL {sup 26}Al/{sup 27}Al RATIOS

DOE Office of Scientific and Technical Information (OSTI.GOV)

MacPherson, G. J.; Bullock, E. S.; Janney, P. E.

2010-03-10

The short-lived radionuclide {sup 26}Al existed throughout the solar nebula 4.57 Ga ago, and the initial abundance ratio ({sup 26}Al/{sup 27}Al){sub 0}, as inferred from magnesium isotopic compositions of calcium-aluminum-rich inclusions (CAIs) in chondritic meteorites, has become a benchmark for understanding early solar system chronology. Internal mineral isochrons in most CAIs measured by secondary ion mass spectrometry (SIMS) give ({sup 26}Al/{sup 27}Al){sub 0} {approx} (4-5) x 10{sup -5}, called 'canonical'. Some recent high-precision analyses of (1) bulk CAIs measured by multicollector inductively coupled plasma mass spectrometry (MC-ICPMS), (2) individual CAI minerals and their mixtures measured by laser-ablation MC-ICPMS, and (3)more » internal isochrons measured by multicollector (MC)-SIMS indicated a somewhat higher 'supracanonical' ({sup 26}Al/{sup 27}Al){sub 0} ranging from (5.85 {+-} 0.05) x 10{sup -5} to >7 x 10{sup -5}. These measurements were done on coarse-grained Type B and Type A CAIs that probably formed by recrystallization and/or melting of fine-grained condensate precursors. Thus the supracanonical ratios might record an earlier event, the actual nebular condensation of the CAI precursors. We tested this idea by performing in situ high-precision magnesium isotope measurements of individual minerals in a fine-grained CAI whose structures and volatility-fractionated trace element abundances mark it as a primary solar nebula condensate. Such CAIs are ideal candidates for the fine-grained precursors to the coarse-grained CAIs, and thus should best preserve a supracanonical ratio. Yet, our measured internal isochron yields ({sup 26}Al/{sup 27}Al){sub 0} = (5.27 {+-} 0.17) x 10{sup -5}. Thus our data do not support the existence of supracanonical ({sup 26}Al/{sup 27}Al){sub 0} = (5.85-7) x 10{sup -5}. There may not have been a significant time interval between condensation of the CAI precursors and their subsequent melting into coarse-grained CAIs.« less

An elementary quantum network using robust nuclear spin qubits in diamond

NASA Astrophysics Data System (ADS)

Kalb, Norbert; Reiserer, Andreas; Humphreys, Peter; Blok, Machiel; van Bemmelen, Koen; Twitchen, Daniel; Markham, Matthew; Taminiau, Tim; Hanson, Ronald

Quantum registers containing multiple robust qubits can form the nodes of future quantum networks for computation and communication. Information storage within such nodes must be resilient to any type of local operation. Here we demonstrate multiple robust memories by employing five nuclear spins adjacent to a nitrogen-vacancy defect centre in diamond. We characterize the storage of quantum superpositions and their resilience to entangling attempts with the electron spin of the defect centre. The storage fidelity is found to be limited by the probabilistic electron spin reset after failed entangling attempts. Control over multiple memories is then utilized to encode states in decoherence protected subspaces with increased robustness. Furthermore we demonstrate memory control in two optically linked network nodes and characterize the storage capabilities of both memories in terms of the process fidelity with the identity. These results pave the way towards multi-qubit quantum algorithms in a remote network setting.

2H and 27Al solid-state NMR study of the local environments in Al-doped 2-line ferrihydrite, goethite, and lepidocrocite

DOE PAGES

Kim, Jongsik; Ilott, Andrew J.; Middlemiss, Derek S.; ...

2015-05-13

Although substitution of aluminum into iron oxides and oxyhydroxides has been extensively studied, it is difficult to obtain accurate incorporation levels. Assessing the distribution of dopants within these materials has proven especially challenging because bulk analytical techniques cannot typically determine whether dopants are substituted directly into the bulk iron oxide or oxyhydroxide phase or if they form separate, minor phase impurities. These differences have important implications for the chemistry of these iron-containing materials, which are ubiquitous in the environment. In this work, 27Al and 2H NMR experiments are performed on series of Al-substituted goethite, lepidocrocite, and 2-line ferrihydrite in ordermore » to develop an NMR method to track Al substitution. The extent of Al substitution into the structural frameworks of each compound is quantified by comparing quantitative 27Al MAS NMR results with those from elemental analysis. Magnetic measurements are performed for the goethite series to compare with NMR measurements. Static 27Al spin–echo mapping experiments are used to probe the local environments around the Al substituents, providing clear evidence that they are incorporated into the bulk iron phases. As a result, predictions of the 2H and 27Al NMR hyperfine contact shifts in Al-doped goethite and lepidocrocite, obtained from a combined first-principles and empirical magnetic scaling approach, give further insight into the distribution of the dopants within these phases.« less

Chronology of formation of early solar system solids from bulk Mg isotope analyses of CV3 chondrules

NASA Astrophysics Data System (ADS)

Chen, Hsin-Wei; Claydon, Jennifer L.; Elliott, Tim; Coath, Christopher D.; Lai, Yi-Jen; Russell, Sara S.

2018-04-01

We have analysed the petrography, major element abundances and bulk Al-Mg isotope systematics of 19 ferromagnesian chondrules from the CV3 chondrites Allende, Mokoia, and Vigarano, together with an Al-rich chondrule and refractory olivine from Mokoia. Co-variations of Al/Mg with Na/Mg and Ti/Mg in our bulk chondrules suggest their compositions are dominantly controlled by reworking of different proportions of chondrule components (e.g. mafic minerals and mesostatis); their precursors are thus fragments from prior generations of chondrules. Our samples show a range in fractionation corrected 26Mg/24Mg (Δ‧26Mg) ∼ 60 ppm, relative to precisions <±5 ppm (2se) and these values broadly covary with 27Al/24Mg. The data can be used to calculate model initial 26Al/27Al, or (26Al/27Al)0, of the chondrule precursors. Our resolvably radiogenic chondrules yield model (26Al/27Al)0 ∼ 1-2 × 10-5, equivalent to model "ages" of precursor formation ≦1 Ma post CAI. However, many of our chondrules show near solar Δ‧26Mg and no variability despite a range in 27Al/24Mg. This suggests their derivation either from younger precursor chondrules or open system behaviour once 26Al was effectively extinct ((26Al/27Al)0 < 0.8 × 10-5, given the resolution here). Evidence for the latter explanation is provided by marked rims of orthopyroxene replacing olivine, indicating reaction of chondrules with a surrounding silicate vapour. Concurrent isotopic exchange of Mg with a near chondritic vapour during late reworking could explain their isotopic systematics. One ferromagnesian object is dominated by a high Mg# olivine with elevated Ti and Ca abundances. This refractory olivine has a markedly negative Δ‧26Mg = -16 ± 3 ppm (2se), reflecting its early removal (model age of <0.5 Ma post CAI), from a reservoir with evolving Δ‧26Mg. If representative of the chondrule forming region, this grain defines a minimum interval of radiogenic ingrowth for CV chondrites commensurate with (26Al/27Al)0 > 3.4 ± 0.6 × 10-5. Overall, our samples record a sequence of events from the formation of ferromagnesian objects within 0.5 Ma of CAI to re-equilibration of chondrules and silicate vapour >2 Ma post CAI, assuming an initially homogeneous 26Al/27Al. Metamorphism on the asteroid parent body may have played a subsequent role in affecting Mg isotope composition, but we argue this had a minor influence on the observations here.

Photo-excited zero-resistance states in quasi-two-dimensional GaAs / Al xGa 1- xAs devices

NASA Astrophysics Data System (ADS)

Mani, R. G.

2007-12-01

We illustrate some experimental features of the recently discovered radiation-induced zero-resistance states in the high-mobility GaAs/AlGaAs system, with a special emphasis on the interplay between the radiation-induced changes in the diagonal resistance and the Hall effect. We show that, quantum Hall effects, i.e., quantum Hall plateaus, disappear under photoexcitation, at the minima of the radiation-induced magnetoresistance oscillations.

Effects of chromium and aluminum on mechanical and oxidation properties of iron-nickel-base superalloys based on CG-27

NASA Technical Reports Server (NTRS)

Schuon, S. R.

1985-01-01

The effects of chromium and aluminum on the mechanical and oxidation properties of a series of gamma-prime-strengthened alloys based on CG-27 were studied. Gamma-prime dispersion and solid-solution strengthening were the principal modes of alloy strengthening. The oxidation attack parameter K sub a decreased with increasing Cr and Al contents for each alloy group based on Al content. As a group, alloys with 3 wt % Al had the lowest attack parameters. Therefore, 3 wt % is the optimum level of Al for parabolic oxidation behavior. Spalling, due to diffusion-induced grain growth, was controlled by the overall Cr and Al levels. The alloy with 4 wt % Cr and 3 wt % Al had stress-rupture properties superior to those of the base alloy, CG-27, and maintained parabolic oxidation behavior while the Cr content was reduced by two-thirds of its value in cast CG-27.

Direct Identification of Dilute Surface Spins on Al2 O3 : Origin of Flux Noise in Quantum Circuits

NASA Astrophysics Data System (ADS)

de Graaf, S. E.; Adamyan, A. A.; Lindström, T.; Erts, D.; Kubatkin, S. E.; Tzalenchuk, A. Ya.; Danilov, A. V.

2017-02-01

An on-chip electron spin resonance technique is applied to reveal the nature and origin of surface spins on Al2 O3 . We measure a spin density of 2.2 ×1 017 spins/m2 , attributed to physisorbed atomic hydrogen and S =1 /2 electron spin states on the surface. This is direct evidence for the nature of spins responsible for flux noise in quantum circuits, which has been an issue of interest for several decades. Our findings open up a new approach to the identification and controlled reduction of paramagnetic sources of noise and decoherence in superconducting quantum devices.

Ideal square quantum wells achieved in AlGaN/GaN superlattices using ultrathin blocking-compensation pair

DOE Office of Scientific and Technical Information (OSTI.GOV)

Chen, Xiaohong; Xu, Hongmei; Xu, Fuchun

A technique for achieving square-shape quantum wells (QWs) against the intrinsic polar discontinuity and interfacial diffusion through self-compensated pair interlayers is reported. Ultrathin low-and-high % pair interlayers that have diffusion-blocking and self-compensation capacities is proposed to resist the elemental diffusion at nanointerfaces and to grow the theoretically described abrupt rectangular AlGaN/GaN superlattices by metal-organic chemical vapor deposition. Light emission efficiency in such nanostructures is effectively enhanced and the quantum-confined Stark effect could be partially suppressed. This concept could effectively improve the quality of ultrathin QWs in functional nanostructures with other semiconductors or through other growth methods.

Remote Entanglement by Coherent Multiplication of Concurrent Quantum Signals

NASA Astrophysics Data System (ADS)

Roy, Ananda; Jiang, Liang; Stone, A. Douglas; Devoret, Michel

2015-10-01

Concurrent remote entanglement of distant, noninteracting quantum entities is a crucial function for quantum information processing. In contrast with the existing protocols which employ the addition of signals to generate entanglement between two remote qubits, the continuous variable protocol we present is based on the multiplication of signals. This protocol can be straightforwardly implemented by a novel Josephson junction mixing circuit. Our scheme would be able to generate provable entanglement even in the presence of practical imperfections: finite quantum efficiency of detectors and undesired photon loss in current state-of-the-art devices.

Optically induced excitonic electroabsorption in a periodically delta-doped InGaAs/GaAs multiple quantum well structure

NASA Technical Reports Server (NTRS)

Larsson, A.; Maserjian, J.

1991-01-01

Large optically induced Stark shifts have been observed in a periodically delta-doped InGaAs/GaAs multiple quantum well structure. With an excitation intensity of 10 mW/sq cm, an absolute quantum well absorption change of 7000/cm was measured with a corresponding differential absorption change as high as 80 percent. The associated maximum change in the quantum well refractive index is 0.04. This material is promising for device development for all-optical computing and signal processing.

Ab initio Quantum Chemical and Experimental Reaction Kinetics Studies in the Combustion of Bipropellants

DTIC Science & Technology

2017-03-24

NUMBER (Include area code) 24 March 2017 Briefing Charts 01 March 2017 - 31 March 2017 Ab initio Quantum Chemical and Experimental Reaction Kinetics...Laboratory AFRL/RQRS 1 Ara Road Edwards AFB, CA 93524 *Email: ghanshyam.vaghjiani@us.af.mil Ab initio Quantum Chemical and Experimental Reaction ...Clearance 17161 Zador et al., Prog. Energ. Combust. Sci., 37 371 (2011) Why Quantum Chemical Reaction Kinetics Studies? DISTRIBUTION A: Approved for

Cryptanalysis of a semi-quantum secret sharing scheme based on Bell states

NASA Astrophysics Data System (ADS)

Gao, Gan; Wang, Yue; Wang, Dong

2018-03-01

In the paper [Mod. Phys. Lett. B 31 (2017) 1750150], Yin et al. proposed a semi-quantum secret sharing scheme by using Bell states. We find that the proposed scheme cannot finish the quantum secret sharing task. In addition, we also find that the proposed scheme has a security loophole, that is, it will not be detected that the dishonest participant, Charlie attacks on the quantum channel.

GaN/AlGaN Strain-Balanced Heterostructures for Near-IR Quantum Well Photodetectors

DTIC Science & Technology

2003-12-03

of Leeds as follows: The contractor will design, fabricate, and analyze Quantum Well Infrared Photodetectors (QWIP) that detect in the 2-6 micron...SUBJECT TERMS EOARD, Sensor Technology, infrared technology, Gallium Nitride, Quantum Well Devices 16. SECURITY CLASSIFICATION OF: 19a. NAME OF...resulting from these collaborations are the first quantum well infrared photodetectors based in the GaN material system to be reported. 1 1. In accordance

Rigidity of quantum steering and one-sided device-independent verifiable quantum computation

NASA Astrophysics Data System (ADS)

Gheorghiu, Alexandru; Wallden, Petros; Kashefi, Elham

2017-02-01

The relationship between correlations and entanglement has played a major role in understanding quantum theory since the work of Einstein et al (1935 Phys. Rev. 47 777-80). Tsirelson proved that Bell states, shared among two parties, when measured suitably, achieve the maximum non-local correlations allowed by quantum mechanics (Cirel’son 1980 Lett. Math. Phys. 4 93-100). Conversely, Reichardt et al showed that observing the maximal correlation value over a sequence of repeated measurements, implies that the underlying quantum state is close to a tensor product of maximally entangled states and, moreover, that it is measured according to an ideal strategy (Reichardt et al 2013 Nature 496 456-60). However, this strong rigidity result comes at a high price, requiring a large number of entangled pairs to be tested. In this paper, we present a significant improvement in terms of the overhead by instead considering quantum steering where the device of the one side is trusted. We first demonstrate a robust one-sided device-independent version of self-testing, which characterises the shared state and measurement operators of two parties up to a certain bound. We show that this bound is optimal up to constant factors and we generalise the results for the most general attacks. This leads us to a rigidity theorem for maximal steering correlations. As a key application we give a one-sided device-independent protocol for verifiable delegated quantum computation, and compare it to other existing protocols, to highlight the cost of trust assumptions. Finally, we show that under reasonable assumptions, the states shared in order to run a certain type of verification protocol must be unitarily equivalent to perfect Bell states.

Convexity of quantum χ2-divergence.

PubMed

Hansen, Frank

2011-06-21

The general quantum χ(2)-divergence has recently been introduced by Temme et al. [Temme K, Kastoryano M, Ruskai M, Wolf M, Verstrate F (2010) J Math Phys 51:122201] and applied to quantum channels (quantum Markov processes). The quantum χ(2)-divergence is not unique, as opposed to the classical χ(2)-divergence, but depends on the choice of quantum statistics. It was noticed that the elements in a particular one-parameter family of quantum χ(2)-divergences are convex functions in the density matrices (ρ,σ), thus mirroring the convexity of the classical χ(2)(p,q)-divergence in probability distributions (p,q). We prove that any quantum χ(2)-divergence is a convex function in its two arguments.

Exponential vanishing of the ground-state gap of the quantum random energy model via adiabatic quantum computing

NASA Astrophysics Data System (ADS)

Adame, J.; Warzel, S.

2015-11-01

In this note, we use ideas of Farhi et al. [Int. J. Quantum. Inf. 6, 503 (2008) and Quantum Inf. Comput. 11, 840 (2011)] who link a lower bound on the run time of their quantum adiabatic search algorithm to an upper bound on the energy gap above the ground-state of the generators of this algorithm. We apply these ideas to the quantum random energy model (QREM). Our main result is a simple proof of the conjectured exponential vanishing of the energy gap of the QREM.

Exponential vanishing of the ground-state gap of the quantum random energy model via adiabatic quantum computing

DOE Office of Scientific and Technical Information (OSTI.GOV)

Adame, J.; Warzel, S., E-mail: warzel@ma.tum.de

In this note, we use ideas of Farhi et al. [Int. J. Quantum. Inf. 6, 503 (2008) and Quantum Inf. Comput. 11, 840 (2011)] who link a lower bound on the run time of their quantum adiabatic search algorithm to an upper bound on the energy gap above the ground-state of the generators of this algorithm. We apply these ideas to the quantum random energy model (QREM). Our main result is a simple proof of the conjectured exponential vanishing of the energy gap of the QREM.