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Sample records for al2o3 films deposited

  1. Preparation of γ-Al2O3 films by laser chemical vapor deposition

    NASA Astrophysics Data System (ADS)

    Gao, Ming; Ito, Akihiko; Goto, Takashi

    2015-06-01

    γ- and α-Al2O3 films were prepared by chemical vapor deposition using CO2, Nd:YAG, and InGaAs lasers to investigate the effects of varying the laser wavelength and deposition conditions on the phase composition and microstructure. The CO2 laser was found to mostly produce α-Al2O3 films, whereas the Nd:YAG and InGaAs lasers produced γ-Al2O3 films when used at a high total pressure. γ-Al2O3 films had a cauliflower-like structure, while the α-Al2O3 films had a dense and columnar structure. Of the three lasers, it was the Nd:YAG laser that interacted most with intermediate gas species. This promoted γ-Al2O3 nucleation in the gas phase at high total pressure, which explains the cauliflower-like structure of nanoparticles observed.

  2. Characteristics of nanocomposite ZrO2/Al2O3 films deposited by plasma-enhanced atomic layer deposition.

    PubMed

    Yun, Sun Jin; Lim, Jung Wook; Kim, Hyun-Tak

    2007-11-01

    Nanocomposite ZrO2/Al2O3 (ZAO) films were deposited on Si by plasma-enhanced atomic layer deposition and the film characteristics including interfacial oxide formation, dielectric constant (k), and electrical breakdown strength were investigated without post-annealing process. In both the mixed and nano-laminated ZAO films, the thickness of the interfacial oxide layer (T(IL)) was considerably reduced compared to ZrO2 and Al2O3 films. The T(IL) was 0.8 nm in nano-composite films prepared at a mixing ratio (ZrO2:Al2O3) of 1:1. The breakdown strength and the leakage current level were greatly improved by adding Al2O3 as little as 7.9% compared to that of ZrO2 and were enhanced more with increasing content of Al2O3. The k of ZrO2 and mixed ZAO (Al2O3 7.9%) films were 20.0 and 16.5, respectively. These results indicate that the addition of Al2O3 to ZrO2 greatly improves the electrical properties with less cost of k compared to the addition of SiO2.

  3. Hard α-Al2O3 Film Coating on Industrial Roller Using Aerosol Deposition Method

    NASA Astrophysics Data System (ADS)

    Seto, Naoki; Endo, Kazuteru; Sakamoto, Nobuo; Hirose, Shingo; Akedo, Jun

    2014-12-01

    It is well known that α-Al2O3 forms very hard, highly insulating, smooth films. There is demand for the use of such films instead of conventional hard, smooth films; For example, industrial rollers such as calendering rollers etc. are always required to have a harder and smoother surface than conventional rollers. Therefore, this work investigated the specification of α-Al2O3 films, e.g., their wear resistance and chemical stability, using various tests. This paper also discusses whether α-Al2O3 film can take the place of Cr plating film as a hard, smooth film by comparing their wear resistance and chemical stability.

  4. Critical tensile and compressive strains for cracking of Al2O3 films grown by atomic layer deposition

    NASA Astrophysics Data System (ADS)

    Jen, Shih-Hui; Bertrand, Jacob A.; George, Steven M.

    2011-04-01

    Al2O3 atomic layer deposition (ALD) is a model ALD system and Al2O3 ALD films are excellent gas diffusion barrier on polymers. However, little is known about the response of Al2O3 ALD films to strain and the potential film cracking that would restrict the utility of gas diffusion barrier films. To understand the mechanical limitations of Al2O3 ALD films, the critical strains at which the Al2O3 ALD films will crack were determined for both tensile and compressive strains. The tensile strain measurements were obtained using a fluorescent tagging technique to image the cracks. The results showed that the critical tensile strain is higher for thinner thicknesses of the Al2O3 ALD film on heat-stabilized polyethylene naphthalate (HSPEN) substrates. A low critical tensile strain of 0.52% was measured for a film thickness of 80 nm. The critical tensile strain increased to 2.4% at a film thickness of 5 nm. In accordance with fracture mechanics modeling, the critical tensile strains and the saturation crack densities scaled as (1/h)1/2 where h is the Al2O3 ALD film thickness. The fracture toughness for cracking, KIC, of the Al2O3 ALD film was also determined to be KIC = 2.30 MPa m1/2. Thinner Al2O3 ALD film thicknesses also had higher critical strains for cracking from compressive strains. Field-emission scanning electron microscopy (FE-SEM) images revealed that Al2O3 ALD films with thicknesses of 30-50 nm on Teflon fluorinated ethylene propylene (FEP) substrates cracked at a critical compressive strain of ˜1.0%. The critical compressive strain increased to ˜2.0% at a film thickness of ˜20 nm. A comparison of the critical tensile strains on HSPEN substrates and critical compressive strains on Teflon FEP substrates revealed some similarities. The critical strain was ˜1.0% for film thicknesses of 30-50 nm for both tensile and compressive strains. The critical compressive strain then increased more rapidly than the critical tensile strain for thinner films with thicknesses

  5. Atomic layer deposition of TiO2 / Al2O3 films for optical applications

    NASA Astrophysics Data System (ADS)

    Triani, Gerry; Evans, Peter J.; Mitchell, David R. G.; Attard, Darren J.; Finnie, Kim S.; James, Michael; Hanley, Tracey; Latella, Bruno; Prince, Kathryn E.; Bartlett, John

    2005-09-01

    Atomic layer deposition (ALD) is an important technology for depositing functional coatings on accessible, reactive surfaces with precise control of thickness and nanostructure. Unlike conventional chemical vapour deposition, where growth rate is dependent on reactant flux, ALD employs sequential surface chemical reactions to saturate a surface with a (sub-) monolayer of reactive compounds such as metal alkoxides or covalent halides, followed by reaction with a second compound such as water to deposit coatings layer-by-layer. A judicious choice of reactants and processing conditions ensures that the reactions are self-limiting, resulting in controlled film growth with excellent conformality to the substrate. This paper investigates the deposition and characterisation of multi-layer TiO2 /Al2O3 films on a range of substrates, including silicon <100>, soda glass and polycarbonate, using titanium tetrachloride/water and trimethylaluminium/water as precursor couples. Structure-property correlations were established using a suite of analytical tools, including transmission electron microscopy (TEM), secondary ion mass spectrometry (SIMS), X-ray reflectometry (XRR) and spectroscopic ellipsometry (SE). The evolution of nanostructure and composition of multi-layer high/low refractive index stacks are discussed as a function of deposition parameters.

  6. Passivation Effect of Atomic Layer Deposition of Al2O3 Film on HgCdTe Infrared Detectors

    NASA Astrophysics Data System (ADS)

    Zhang, Peng; Ye, Zhen-Hua; Sun, Chang-Hong; Chen, Yi-Yu; Zhang, Tian-Ning; Chen, Xin; Lin, Chun; Ding, Ring-Jun; He, Li

    2016-09-01

    The passivation effect of atomic layer deposition of (ALD) Al2O3 film on a HgCdTe infrared detector was investigated in this work. The passivation effect of Al2O3 film was evaluated by measuring the minority carrier lifetime, capacitance versus voltage ( C- V) characteristics of metal-insulator-semiconductor devices, and resistance versus voltage ( R- V) characteristics of variable-area photodiodes. The minority carrier lifetime, C- V characteristics, and R- V characteristics of HgCdTe devices passivated by ALD Al2O3 film was comparable to those of HgCdTe devices passivated by e-beam evaporation of ZnS/CdTe film. However, the baking stability of devices passivated by Al2O3 film is inferior to that of devices passivated by ZnS/CdTe film. In future work, by optimizing the ALD Al2O3 film growing process and annealing conditions, it may be feasible to achieve both excellent electrical properties and good baking stability.

  7. W:Al2O3 nanocomposite thin films with tunable optical properties prepared by atomic layer deposition

    DOE PAGES

    Babar, Shaista; Mane, Anil U.; Yanguas-Gil, Angel; ...

    2016-06-17

    Here, a systematic alteration in the optical properties of W:Al2O3 nanocomposite films is demonstrated by precisely varying the W cycle percentage (W%) from 0 to 100% in Al2O3 during atomic layer deposition. The direct and indirect band energies of the nanocomposite materials decrease from 5.2 to 4.2 eV and from 3.3 to 1.8 eV, respectively, by increasing the W% from 10 to 40. X-ray absorption spectroscopy reveals that, for W% < 50, W is present in both metallic and suboxide states, whereas, for W% ≥ 50, only metallic W is seen. This transition from dielectric to metallic character at W%more » ~ 50 is accompanied by an increase in the electrical and thermal conductivity and the disappearance of a clear band gap in the absorption spectrum. The density of the films increases monotonically from 3.1 g/cm3 for pure Al2O3 to 17.1 g/cm3 for pure W, whereas the surface roughness is greatest for the W% = 50 films. The W:Al2O3 nanocomposite films are thermally stable and show little change in optical properties upon annealing in air at 500 °C. These W:Al2O3 nanocomposite films show promise as selective solar absorption coatings for concentrated solar power applications.« less

  8. Influence of argon plasma on the deposition of Al2O3 film onto the PET surfaces by atomic layer deposition.

    PubMed

    Edy, Riyanto; Huang, Xiaojiang; Guo, Ying; Zhang, Jing; Shi, Jianjun

    2013-02-15

    In this paper, polyethyleneterephthalate (PET) films with and without plasma pretreatment were modified by atomic layer deposition (ALD) and plasma-assisted atomic layer deposition (PA-ALD). It demonstrates that the Al2O3 films are successfully deposited onto the surface of PET films. The cracks formed on the deposited Al2O3 films in the ALD, plasma pretreated ALD, and PA-ALD were attributed to the energetic ion bombardment in plasmas. The surface wettability in terms of water contact angle shows that the deposited Al2O3 layer can enhance the wetting property of modified PET surface. Further characterizations of the Al2O3 films suggest that the elevated density of hydroxyl -OH group improve the initial growth of ALD deposition. Chemical composition of the Al2O3-coated PET film was characterized by X-ray photoelectron spectroscopy, which shows that the content of C 1s reduces with the growing of O 1s in the Al2O3-coated PET films, and the introduction of plasma in the ALD process helps the normal growth of Al2O3 on PET in PA-ALD.

  9. Laser damage properties of TiO2/Al2O3 thin films grown by atomic layer deposition

    NASA Astrophysics Data System (ADS)

    Wei, Yaowei; Liu, Hao; Sheng, Ouyang; Liu, Zhichao; Chen, Songlin; Yang, Liming

    2011-08-01

    Research on thin film deposited by atomic layer deposition (ALD) for laser damage resistance is rare. In this paper, it has been used to deposit TiO2/Al2O3 films at 110° C and 280° C on fused silica and BK7 substrates. Microstructure of the thin films was investigated by x-ray diffraction. The laser-induced damage threshold (LIDT) of samples was measured by a damage test system. Damage morphology was studied under a Nomarski differential interference contrast microscope and further checked under an atomic force microscope. Multilayers deposited at different temperatures were compared. The results show that the films deposited by ALD had better uniformity and transmission; in this paper, the uniformity is better than 99% over 100mm Φ samples, and the transmission is more than 99.8% at 1064nm. Deposition temperature affects the deposition rate and the thin film microstructure and further influences the LIDT of the thin films. As to the TiO2/Al2O3 films, the LIDTs were 6.73±0.47J/cm2 and 6.5±0.46J/cm2 at 110° C on fused silica and BK7 substrates, respectively. The LIDTs at 110° C are notably better than 280° C.

  10. Optical and electrical properties of ZnO nanocrystal thin films passivated by atomic layer deposited Al2O3

    NASA Astrophysics Data System (ADS)

    Choi, Ji-Hyuk; Kim, Jungwoo; Oh, Soong Ju; Kim, Daekyoung; Kim, Yong-Hoon; Chae, Heeyeop; Kim, Hyoungsub

    2016-07-01

    While colloidal semiconductor nanocrystal (NC) is preferred for use in solution-based optoelectronic devices, the large number of surface defects associated with its high surface-to-volume ratio degrades the optimal performance of NC-based devices due to the extensive trapping of free carriers available for charge transport. Here, we studied a simple and effective strategy to control the degree of passivation and doping level of solution-deposited ZnO NC films by infilling with ultra-thin Al2O3 using an atomic layer deposition (ALD) technique. According to various spectroscopic, microstructural, and electrical analyses, the ALD-Al2O3 treatment dramatically reduced the number of surface trap states with high ambient stability while simultaneously supplied excess carriers probably via a remote doping mechanism. As a consequence, the field-effect transistors built using the ZnO NC films with ALD-Al2O3 treatment for an optimal number of cycles exhibited significantly enhanced charge transport.

  11. Top gate ZnO-Al2O3 thin film transistors fabricated using a chemical bath deposition technique

    NASA Astrophysics Data System (ADS)

    Gogoi, Paragjyoti; Saikia, Rajib; Changmai, Sanjib

    2015-04-01

    ZnO thin films were prepared by a simple chemical bath deposition technique using an inorganic solution mixture of ZnCl2 and NH3 on glass substrates and then were used as the active material in thin film transistors (TFTs). The TFTs were fabricated in a top gate coplanar electrode structure with high-k Al2O3 as the gate insulator and Al as the source, drain and gate electrodes. The TFTs were annealed in air at 500 °C for 1 h. The TFTs with a 50 μm channel length exhibited a high field-effect mobility of 0.45 cm2/(V·s) and a low threshold voltage of 1.8 V. The sub-threshold swing and drain current ON-OFF ratio were found to be 0.6 V/dec and 106, respectively.

  12. Al2O3 thin films by plasma-enhanced chemical vapour deposition using trimethyl-amine alane (TMAA) as the Al precursor

    NASA Astrophysics Data System (ADS)

    Chryssou, C. E.; Pitt, C. W.

    We report the low temperature (200-300 °C) deposition of uniform, amorphous Al2O3 thin films by plasma-enhanced chemical vapour deposition (PECVD) using trimethyl-amine alane (TMAA) as the Al precursor. The thin films were deposited on both Si and quartz silica (SiO2) substrates. Deposition rates were typically 60 Åmin-1 keeping the TMAA temperature constant at 45 °C. The deposited Al2O3 thin films were stoichiometric alumina with low carbon contamination (0.7-1.3 At%). The refractive index ranged from 1.54 to 1.62 depending on the deposition conditions. The deposition rate was studied as a function of both the RF power and the substrate temperature. The structure and the surface of the deposited Al2O3 thin films were studied using X-ray diffraction, atomic force microscopy (AFM) and scanning electron microscopy (SEM).

  13. Interface Properties of Atomic-Layer-Deposited Al2O3 Thin Films on Ultraviolet/Ozone-Treated Multilayer MoS2 Crystals.

    PubMed

    Park, Seonyoung; Kim, Seong Yeoul; Choi, Yura; Kim, Myungjun; Shin, Hyunjung; Kim, Jiyoung; Choi, Woong

    2016-05-11

    We report the interface properties of atomic-layer-deposited Al2O3 thin films on ultraviolet/ozone (UV/O3)-treated multilayer MoS2 crystals. The formation of S-O bonds on MoS2 after low-power UV/O3 treatment increased the surface energy, allowing the subsequent deposition of uniform Al2O3 thin films. The capacitance-voltage measurement of Au-Al2O3-MoS2 metal oxide semiconductor capacitors indicated n-type MoS2 with an electron density of ∼10(17) cm(-3) and a minimum interface trap density of ∼10(11) cm(-2) eV(-1). These results demonstrate the possibility of forming a high-quality Al2O3-MoS2 interface by proper UV/O3 treatment, providing important implications for their integration into field-effect transistors.

  14. Hydrophobicity enhancement of Al2O3 thin films deposited on polymeric substrates by atomic layer deposition with perfluoropropane plasma treatment

    NASA Astrophysics Data System (ADS)

    Ali, Kamran; Choi, Kyung-Hyun; Kim, Chang Young; Doh, Yang Hoi; Jo, Jeongdai

    2014-06-01

    The optoelectronics devices such as organic light emitting diodes are greatly vulnerable to moisture, which reduces their functionality and life cycle. The Al2O3 thin films are mostly used as barrier coatings in such electronic devices to protect them from water vapors. The performance of the Al2O3 barrier films can be improved by enhancing their hydrophobicity. Greater the hydrophobicity of the barrier films, greater will be their protection against water vapors. This paper reports on the enhancement of hydrophobicity of Al2O3 thin films through perfluoropropane (C3F8) plasma treatment. Firstly, good quality Al2O3 films have been fabricated through atomic layer deposition (ALD) on polyethylene naphthalate (PEN) substrates at different temperatures. The fabricated films are then plasma treated with C3F8 to enhance their hydrophobicity. Hydrophobic Al2O3 thin films have shown good morphological and optical properties. Low average arithmetic roughness (Ra) of 1.90 nm, 0.93 nm and 0.88 nm have been recorded for the C3F8 plasma treated films deposited at room temperature (RT), 50 °C and 150 °C, respectively. Optical transmittance of more than 90% has been achieved for the C3F8 plasma treated films grown at 50 °C and 150 °C. The contact angle has been increased from 48° ± 3 to 158° ± 3 for the films deposited at RT and increased from 41° ± 3 to 148° ± 3 for the films deposited at 150 °C.

  15. Atomic layer deposition (ALD) of TiO2 and Al2O3 thin films on silicon

    NASA Astrophysics Data System (ADS)

    Mitchell, David R. G.; Triani, Gerry; Attard, Darren J.; Finnie, Kim S.; Evans, Peter J.; Barbe, Christophe J.; Bartlett, John R.

    2004-04-01

    The essential features of the ALD process involve sequentially saturating a surface with a (sub)monolayer of reactive species, such as a metal halide, then reacting it with a second species to form the required phase in-situ. Repetition of the reaction sequence allows the desired thickness to be deposited. The self-limiting nature of the reactions ensures excellent conformality, and sequential processing results in exquisite control over film thickness, albeit at rather slow deposition rates, typically <200nm/hr. We have been developing our capability with ALD deposition, to understand the influence of deposition parameters on the nature of TiO2 and Al2O3 films (high and low refractive index respectively), and multilayer stacks thereof. These stacks have potential applications as anti-reflection coatings and optical filters. This paper will explore the evolution of structure in our films as a function of deposition parameters including temperature and substrate surface chemistry. A broad range of techniques have been applied to the study of these films, including cross sectional transmission electron microscopy, spectroscopic ellipsometry, secondary ion mass spectrometry etc. These have enabled a wealth of microstructural and compositional information on the films to be acquired, such as accurate film thickness, composition, crystallization sequence and orientation with respect to the substrate. The ALD method is shown to produce single layer films and multilayer stacks with exceptional uniformity and flatness, and in the case of stacks, chemically abrupt interfaces. We are currently extending this technology to the coating of polymeric substrates.

  16. Properties of atomic-layer-deposited Al2O3/ZnO dielectric films grown at low temperature for RF MEMS

    NASA Astrophysics Data System (ADS)

    Herrmann, Cari F.; Del Rio, Frank W.; George, Steven M.; Bright, Victor M.

    2005-01-01

    Al2O3/ZnO alloy films were grown at 100°C using atomic layer deposition (ALD) techniques. It has been previously established that the resistivity of these films can be tuned over a wide range by varying the amount of Zn in the film. Al2O3/ZnO ALD alloy films can therefore be designed with a dielectric constant high enough to provide a large down-state capacitance and a resistivity low enough to promote the dissipation of trapped charges. The material and electrical properties of the Al2O3/ZnO ALD films were investigated using Auger electron spectroscopy (AES), nanoindentation, and mercury probe measurements. Chemical analysis using AES confirmed the presence of both Al and Zn in the alloys. The nanoindentation measurements were used to calculate the Young's modulus and hardness of the films. Pure Al2O3 ALD was determined to have a modulus between 150 and 155 GPa and a hardness of ~8 GPa, while the results for pure ZnO ALD indicated a modulus between 120 and 140 GPa and a hardness of ~5 GPa. An Al2O3/ZnO ALD alloy displayed a modulus of 140-145 GPa, which falls between the two pure films, and a hardness of ~8 GPa, which is similar to the pure Al2O3 film. The dielectric constants of the ALD films were calculated from the mercury probe measurements and were determined to be around 6.8. These properties indicate that the Al2O3/ZnO ALD films can be engineered as a property specific dielectric layer for RF MEMS devices.

  17. Effect of atomic layer deposition temperature on current conduction in Al2O3 films formed using H2O oxidant

    NASA Astrophysics Data System (ADS)

    Hiraiwa, Atsushi; Matsumura, Daisuke; Kawarada, Hiroshi

    2016-08-01

    To develop high-performance, high-reliability gate insulation and surface passivation technologies for wide-bandgap semiconductor devices, the effect of atomic layer deposition (ALD) temperature on current conduction in Al2O3 films is investigated based on the recently proposed space-charge-controlled field emission model. Leakage current measurement shows that Al2O3 metal-insulator-semiconductor capacitors formed on the Si substrates underperform thermally grown SiO2 capacitors at the same average field. However, using equivalent oxide field as a more practical measure, the Al2O3 capacitors are found to outperform the SiO2 capacitors in the cases where the capacitors are negatively biased and the gate material is adequately selected to reduce virtual dipoles at the gate/Al2O3 interface. The Al2O3 electron affinity increases with the increasing ALD temperature, but the gate-side virtual dipoles are not affected. Therefore, the leakage current of negatively biased Al2O3 capacitors is approximately independent of the ALD temperature because of the compensation of the opposite effects of increased electron affinity and permittivity in Al2O3. By contrast, the substrate-side sheet of charge increases with increasing ALD temperature above 210 °C and hence enhances the current of positively biased Al2O3 capacitors more significantly at high temperatures. Additionally, an anomalous oscillatory shift of the current-voltage characteristics with ALD temperature was observed in positively biased capacitors formed by low-temperature (≤210 °C) ALD. This shift is caused by dipoles at the Al2O3/underlying SiO2 interface. Although they have a minimal positive-bias leakage current, the low-temperature-grown Al2O3 films cause the so-called blisters problem when heated above 400 °C. Therefore, because of the absence of blistering, a 450 °C ALD process is presently the most promising technology for growing high-reliability Al2O3 films.

  18. Role of oxygen pressure on the structural, morphological and optical properties of c-Al2O3 films deposited by thermal evaporator

    NASA Astrophysics Data System (ADS)

    Khan, Ijaz Ahmad; Amna, Noureen; Kanwal, Nosheen; Razzaq, Maleeha; Farid, Amjad; Amin, Nasir; Ikhlaq, Uzma; Saleem, Murtaza; Ahmad, Riaz

    2017-03-01

    Aluminum oxide (c-Al2O3) films are deposited for various (0.5, 1, 1.5 and 2 mbar) oxygen pressures on glass substrates by thermal evaporator. The x-ray diffraction patterns exhibit the development of single diffraction peak related to c-Al2O3 phase which grows along (2 2 0) orientation up to 1.5 mbar pressure. For 2 mbar pressure, the deposited film becomes amorphous because no diffraction peak is observed. A minimum FWHM and maximum crystallite size of c-Al2O3 (2 2 0) plane is observed for 1 mbar pressure. The enhanced crystallite size of c-Al2O3 (2 2 0) plane is responsible to decrease the dislocation density and residual stresses developed during the deposition process. The field emission scanning electron microscopic analysis reveals the formation of smooth, uniform and compact films showing uniform distribution of nano-particles of different shapes and sizes. The energy dispersive x-ray spectroscopic analysis confirms the presence of Al whose content is decreased with the increase of oxygen pressures. The ellipsometric analysis confirms that the refractive index and the thickness of c-Al2O3 film deposited for 0.5 mbar pressure are found to 1.685 and 124.43 nm respectively. In short, the crystal structure, surface morphology, film thickness and refractive index of c-Al2O3 films are associated with the increase of oxygen pressures.

  19. Thermo-Optical Properties of Thin-Film TiO2–Al2O3 Bilayers Fabricated by Atomic Layer Deposition

    PubMed Central

    Ali, Rizwan; Saleem, Muhammad Rizwan; Pääkkönen, Pertti; Honkanen, Seppo

    2015-01-01

    We investigate the optical and thermo-optical properties of amorphous TiO2–Al2O3 thin-film bilayers fabricated by atomic layer deposition (ALD). Seven samples of TiO2–Al2O3 bilayers are fabricated by growing Al2O3 films of different thicknesses on the surface of TiO2 films of constant thickness (100 nm). Temperature-induced changes in the optical refractive indices of these thin-film bilayers are measured by a variable angle spectroscopic ellipsometer VASE®. The optical data and the thermo-optic coefficients of the films are retrieved and calculated by applying the Cauchy model and the linear fitting regression algorithm, in order to evaluate the surface porosity model of TiO2 films. The effects of TiO2 surface defects on the films’ thermo-optic properties are reduced and modified by depositing ultra-thin ALD-Al2O3 diffusion barrier layers. Increasing the ALD-Al2O3 thickness from 20 nm to 30 nm results in a sign change of the thermo-optic coefficient of the ALD-TiO2. The thermo-optic coefficients of the 100 nm-thick ALD-TiO2 film and 30 nm-thick ALD-Al2O3 film in a bilayer are (0.048 ± 0.134) × 10−4 °C−1 and (0.680 ± 0.313) × 10−4 °C−1, respectively, at a temperature T = 62 °C.

  20. Interface Electrical Properties of Al2O3 Thin Films on Graphene Obtained by Atomic Layer Deposition with an in Situ Seedlike Layer.

    PubMed

    Fisichella, Gabriele; Schilirò, Emanuela; Di Franco, Salvatore; Fiorenza, Patrick; Lo Nigro, Raffaella; Roccaforte, Fabrizio; Ravesi, Sebastiano; Giannazzo, Filippo

    2017-03-01

    High-quality thin insulating films on graphene (Gr) are essential for field-effect transistors (FETs) and other electronics applications of this material. Atomic layer deposition (ALD) is the method of choice to deposit high-κ dielectrics with excellent thickness uniformity and conformal coverage. However, to start the growth on the sp(2) Gr surface, a chemical prefunctionalization or the physical deposition of a seed layer are required, which can effect, to some extent, the electrical properties of Gr. In this paper, we report a detailed morphological, structural, and electrical investigation of Al2O3 thin films grown by a two-steps ALD process on a large area Gr membrane residing on an Al2O3-Si substrate. This process consists of the H2O-activated deposition of a Al2O3 seed layer a few nanometers in thickness, performed in situ at 100 °C, followed by ALD thermal growth of Al2O3 at 250 °C. The optimization of the low-temperature seed layer allowed us to obtain a uniform, conformal, and pinhole-free Al2O3 film on Gr by the second ALD step. Nanoscale-resolution mapping of the current through the dielectric by conductive atomic force microscopy (CAFM) demonstrated an excellent laterally uniformity of the film. Raman spectroscopy measurements indicated that the ALD process does not introduce defects in Gr, whereas it produces a partial compensation of Gr unintentional p-type doping, as confirmed by the increase of Gr sheet resistance (from ∼300 Ω/sq in pristine Gr to ∼1100 Ω/sq after Al2O3 deposition). Analysis of the transfer characteristics of Gr field-effect transistors (GFETs) allowed us to evaluate the relative dielectric permittivity (ε = 7.45) and the breakdown electric field (EBD = 7.4 MV/cm) of the Al2O3 film as well as the transconductance and the holes field-effect mobility (∼1200 cm(2) V(-1) s(-1)). A special focus has been given to the electrical characterization of the Al2O3-Gr interface by the analysis of high frequency capacitance

  1. Electrically programmable-erasable In-Ga-Zn-O thin-film transistor memory with atomic-layer-deposited Al2O3/Pt nanocrystals/Al2O3 gate stack

    NASA Astrophysics Data System (ADS)

    Qian, Shi-Bing; Zhang, Wen-Peng; Liu, Wen-Jun; Ding, Shi-Jin

    2015-12-01

    Amorphous indium-gallium-zinc oxide (a-IGZO) thin-film transistor (TFT) memory is very promising for transparent and flexible system-on-panel displays; however, electrical erasability has always been a severe challenge for this memory. In this article, we demonstrated successfully an electrically programmable-erasable memory with atomic-layer-deposited Al2O3/Pt nanocrystals/Al2O3 gate stack under a maximal processing temperature of 300 oC. As the programming voltage was enhanced from 14 to 19 V for a constant pulse of 0.2 ms, the threshold voltage shift increased significantly from 0.89 to 4.67 V. When the programmed device was subjected to an appropriate pulse under negative gate bias, it could return to the original state with a superior erasing efficiency. The above phenomena could be attributed to Fowler-Nordheim tunnelling of electrons from the IGZO channel to the Pt nanocrystals during programming, and inverse tunnelling of the trapped electrons during erasing. In terms of 0.2-ms programming at 16 V and 350-ms erasing at -17 V, a large memory window of 3.03 V was achieved successfully. Furthermore, the memory exhibited stable repeated programming/erasing (P/E) characteristics and good data retention, i.e., for 2-ms programming at 14 V and 250-ms erasing at -14 V, a memory window of 2.08 V was still maintained after 103 P/E cycles, and a memory window of 1.1 V was retained after 105 s retention time.

  2. Effects of channel structure consisting of ZnO/Al2O3 multilayers on thin-film transistors fabricated by atomic layer deposition

    NASA Astrophysics Data System (ADS)

    Cui, Guodong; Han, Dedong; Dong, Junchen; Cong, Yingying; Zhang, Xiaomi; Li, Huijin; Yu, Wen; Zhang, Shengdong; Zhang, Xing; Wang, Yi

    2017-04-01

    By applying a novel active layer comprising ZnO/Al2O3 multilayers, we have successfully fabricated fully transparent high-performance thin-film transistors (TFTs) with a bottom gate structure by atomic layer deposition (ALD) at low temperature. The effects of various ZnO/Al2O3 multilayers were studied to improve the morphological and electrical properties of the devices. We found that the ZnO/Al2O3 multilayers have a significant impact on the performance of the TFTs, and that the TFTs with the ZnO/15-cycle Al2O3/ZnO structure exhibit superior performance with a low threshold voltage (V TH) of 0.9 V, a high saturation mobility (μsat) of 145 cm2 V‑1 s‑1, a steep subthreshold swing (SS) of 162 mV/decade, and a high I on/I off ratio of 3.15 × 108. The enhanced electrical properties were explained by the improved crystalline nature of the channel layer and the passivation effect of the Al2O3 layer.

  3. Temperature-induced changes in optical properties of thin film TiO2-Al2O3 bi-layer structures grown by atomic layer deposition

    NASA Astrophysics Data System (ADS)

    Ali, Rizwan; Saleem, Muhammad Rizwan; Honkanen, Seppo

    2016-02-01

    We investigate the optical properties and corresponding temperature-induced changes in highly uniform thin amorphous films and their bi-layer stacks grown by Atomic Layer Deposition (ALD). The environmentally driven conditions such as temperature, humidity and pressure have a significant influence on optical properties of homogeneous and heterogeneous bi-layer stacked structures of TiO2-Al2O3 and subsequently affect the specific sensitive nature of optical signals from nano-optical devices. Owing to the super hydrophilic behavior and inhibited surface defects in the form of hydrogenated species, the thermo-optic coefficient (TOC) of ~ 100 nm thick ALD-TiO2 films vary significantly with temperature, which can be used for sensing applications. On the other hand, the TOC of ~ 100 nm thick ALD-Al2O3 amorphous films show a differing behavior with temperature. In this work, we report on reduction of surface defects in ALD-TiO2 films by depositing a number of ultra-thin ALD-Al2O3 films to act as impermeable barrier layers. The designed and fabricated heterostructures of ALD-TiO2/Al2O3 films with varying ALD-Al2O3 thicknesses are exploited to stabilize the central resonance peak of Resonant Waveguide Gratings (RWGs) in thermal environments. The temperature-dependent optical constants of ALD-TiO2/Al2O3 bi-layer films are measured by a variable angle spectroscopic ellipsometer (VASE), covering a wide spectral range 380 <= λ <= 1800 nm at a temperature range from 25 to 105 °C. The Cauchy model is used to design and retrieve refractive indices at these temperatures, measured with three angles of incidence (59°, 67°, and 75°). The optical constants of 100 nm thick ALD-TiO2 and various combinational thicknesses of ALD-Al2O3 films are used to predict TOCs using a polynomial fitting algorithm.

  4. Alternative Dielectric Films for rf MEMS Capacitive Switches Deposited using Atomic Layer Deposited Al2O3/ZnO Alloys

    DTIC Science & Technology

    2006-07-02

    switches deposited using atomic layer deposited Al2O3/ZnO alloys Cari F. Herrmann a,b, Frank W. DelRio a, David C. Miller a, Steven M. George b,c, Victor...The layer is an alloy mixture of Al2O3 and ZnO and is proposed for use as charge dissipative layers in which the dielectric onstant is significant...investigates Al2O3/ZnO ALD alloys deposited at 100 and 177 ◦C and compares their material properties. Auger electron pectroscopy was used to determine the

  5. FePt : Al2O3 nanocomposite thin films synthesized by magnetic trapping assisted pulsed laser deposition with reduced intergranular exchange coupling

    NASA Astrophysics Data System (ADS)

    Lin, J. J.; Pan, Z. Y.; Karamat, S.; Mahmood, S.; Lee, P.; Tan, T. L.; Springham, S. V.; Rawat, R. S.

    2008-05-01

    FePt : Al2O3 nanocomposite thin films synthesized by magnetic trapping (MT) assisted pulsed laser deposition (PLD) were found to have lower transition temperature for L10 face-centred-tetragonal (fct) phase due to higher concentration of defects. The low phase transition temperature together with non-magnetic matrix materials helps to reduce grain growth and agglomeration during annealing. Small remanence ratio and coercive squareness for nanocomposite thin films annealed at 300 °C to fct phase confirm that the main intergranular interaction is magnetostatic interaction rather than exchange coupling. The MT assisted PLD can synthesize fct-FePt : Al2O3 nanocomposite thin films with reduced intergranular exchange coupling.

  6. Influences of annealing on structural and compositional properties of Al2O3 thin films grown on 4H-SiC by atomic layer deposition

    NASA Astrophysics Data System (ADS)

    Tian, Li-Xin; Zhang, Feng; Shen, Zhan-Wei; Yan, Guo-Guo; Liu, Xing-Fang; Zhao, Wan-Shun; Wang, Lei; Sun, Guo-Sheng; Zeng, Yi-Ping

    2016-12-01

    Annealing effects on structural and compositional performances of Al2O3 thin films on 4H-SiC substrates are studied comprehensively. The Al2O3 films are grown by atomic layer deposition through using trimethylaluminum and H2O as precursors at 300 °C, and annealed at various temperatures in ambient N2 for 1 min. The Al2O3 film transits from amorphous phase to crystalline phase as annealing temperature increases from 750 °C to 768 °C. The refractive index increases with annealing temperature rising, which indicates that densification occurs during annealing. The densification and grain formation of the film upon annealing are due to crystallization which is relative with second-nearest-neighbor coordination variation according to the x-ray photoelectron spectroscopy (XPS). Although the binding energies of Al 2p and O 1s increase together during crystallization, separations between Al 2p and O 1s are identical between as-deposited and annealed sample, which suggests that the nearest-neighbour coordination is similar. Project supported by the National Basic Research Program of China (Grant No. 2015CB759600), the National Natural Science Foundation of China (Grant Nos. 61474113, 61574140, and 61274007), and the Beijing Nova Program, China (Grant No. xx2016071), and the CAEP Microsystem and THz Science and Technology Foundation (Grant No. CAEPMT201502).

  7. Structure Evolution and Electric Properties of TaN Films Deposited on Al2O3-BASED Ceramic and Glass Substrates by Magnetron Reactive Sputtering

    NASA Astrophysics Data System (ADS)

    Zhou, Yan Ming; Ma, Yang Zhao; Xie, Zhong; He, Ming Zhi

    2014-03-01

    Structure evolution and electric properties of tantalum nitride (TaN) films deposited on Al2O3-based ceramic and glass substrates by magnetron reactive sputtering were carried out as a function of the N2-to-Ar flow ratio. The TaN thin films on Al2O3-based ceramic substrates grow with micronclusters composed of numerous nanocrystallites, contains from single-phase of Ta2N grains to TaN, and exhibits high defect density, sheet resistance and negative TCR as the N2-to-Ar flow ratio continuously increases. However, the films on the glass substrates grow in the way of sandwich close-stack, contains from single-phase of Ta2N grains to TaN and Ta3N5 phases with the increase of N2-to-Ar flow ratio. These results indicate that the N2-to-Ar flow ratio and surface characteristic difference of substrates play a dominant effect on the structure and composition of the TaN films, resulting in different electrical properties for the films on Al2O3-based ceramic and the samples on glass substrates.

  8. Antimicrobial effect of Al2O3, Ag and Al2O3/Ag thin films on Escherichia coli and Pseudomonas putida

    NASA Astrophysics Data System (ADS)

    Angelov, O.; Stoyanova, D.; Ivanova, I.; Todorova, S.

    2016-10-01

    The influence of Al2O3, Ag and Al2O3/Ag thin films on bacterial growth of Gramnegative bacteria Pseudomonas putida and Escherichia coli is studied. The nanostructured thin films are deposited on glass substrates without intentional heating through r.f. magnetron sputtering in Ar atmosphere of Al2O3 and Ag targets or through sequential sputtering of Al2O3 and Ag targets, respectively. The individual Ag thin films (thickness 8 nm) have a weak bacteriostatic effect on Escherichia coli expressed as an extended adaptive phase of the bacteria up to 5 hours from the beginning of the experiment, but the final effect is only 10 times lower bacterial density than in the control. The individual Al2O3 film (20 nm) has no antibacterial effect against two strains E. coli - industrial and pathogenic. The Al2O3/Ag bilayer films (Al2O3 20 nm/Ag 8 nm) have strong bactericidal effect on Pseudomonas putida and demonstrate an effective time of disinfection for 2 hours. The individual films Al2O3 and Ag have not pronounced antibacterial effect on Pseudomonas putida. A synergistic effect of Al2O3/Ag bilayer films in formation of oxidative species on the surface in contact with the bacterial suspension could be a reason for their antimicrobial effect on E. coli and P. putida.

  9. Comparison of the microstructure and magnetic properties of strontium hexaferrite films deposited on Al2O3(0001), Si(100)/Pt(111) and Si(100) substrates by pulsed laser technique

    NASA Astrophysics Data System (ADS)

    Masoudpanah, S. M.; Seyyed Ebrahimi, S. A.; Ong, C. K.

    2014-01-01

    Strontium hexaferrite SrFe12O19 (SrM) films have been deposited on Al2O3(0001), Si(100)/Pt(111) and Si(100) substrates. The (001) oriented SrFe12O19 films deposited on the Al2O3(0001) and Si(100)/Pt(111) substrates have been confirmed by X-ray diffraction patterns. Higher coercivity in perpendicular direction rather than in-plane direction of the SrM/Al2O3(0001) and SrM/Pt(111) films showed that the films had perpendicular magnetic anisotropy. The (001) orientation and similar microstructure and magnetic properties of the SrM/Al2O3(0001) and SrM/Pt(111) films show the Al2O3(0001) substrate can be replaced by the Si(100)/Pt(111) substrate.

  10. Study of ZrO2/Al2O3/ZrO2 and Al2O3/ZrO2/Al2O3 stack structures deposited by sol-gel method on Si

    NASA Astrophysics Data System (ADS)

    Vitanov, P.; Harizanova, A.; Ivanova, T.; Dimitrova, T.

    2010-02-01

    Based on our previous experience with pseudobinary alloys of (Al2O3)x(ZrO2)1-x as high-k materials and passivating coatings for solar cells, stack systems of ZrO2/Al2O3/ZrO2and Al2O3/ZrO2/Al2O3, deposited by simple and low cost sol-gel technology have been studied. The thin films of ZrO2 and Al2O3 were sequentially obtained on Si substrates including spin coating deposition from stable solutions. High resolution scanning electron microscopy (HRSEM) was used to compare the morphology of the nanolaminates. The layers were optically characterized by UV-VIS spectrophotometry. The electrical measurements were carried out on metal-insulator-semiconductor (MIS) structures. Their leakage current and relative permittivity were determined.

  11. Hydrogen induced passivation of Si interfaces by Al2O3 films and SiO2/Al2O3 stacks

    NASA Astrophysics Data System (ADS)

    Dingemans, G.; Beyer, W.; van de Sanden, M. C. M.; Kessels, W. M. M.

    2010-10-01

    The role of hydrogen in Si surface passivation is experimentally identified for Al2O3 (capping) films synthesized by atomic layer deposition. By using stacks of SiO2 and deuterated Al2O3, we demonstrate that hydrogen is transported from Al2O3 to the underlying SiO2 already at relatively low annealing temperatures of 400 °C. This leads to a high level of chemical passivation of the interface. Moreover, the thermal stability of the passivation up to 800 °C was significantly improved by applying a thin Al2O3 capping film on the SiO2. The hydrogen released from the Al2O3 film favorably influences the passivation of Si interface defects.

  12. Thickness effect on the optical and morphological properties in Al2O3/ZnO nanolaminate thin films prepared by atomic layer deposition

    NASA Astrophysics Data System (ADS)

    López, J.; Martínez, J.; Abundiz, N.; Domínguez, D.; Murillo, E.; Castillón, F. F.; Machorro, R.; Farías, M. H.; Tiznado, H.

    2016-02-01

    In this work, we studied the optical and morphological properties of ultrathin nanolaminate films based on Al2O3/ZnO (AZ) bilayers stack. The films were deposited on Si (100) by means of thermal atomic layer deposition (ALD) technique. The bilayer thicknesses (ratio = 1:1) were 0.2, 1, 2, 4, 10 and 20 nm. Refractive index (n) and band gap (Eg) of each nanolaminate were studied via spectroscopic ellipsometry (SE), and spectral reflectance ultraviolet-visible spectroscopy (UV-vis). Surface morphology and roughness parameters of the nanolaminates were measured by Atomic Force Microscopy (AFM). The optical and morphological properties were shown highly dependent on the bilayer thickness. Ellipsometric data treated through the Cody-Lorentz optical model revealed that the refractive index decreases for thinner bilayers. A sharp intensity decay of refractive index and peaks at the UV region (200-400 nm) indicated increased transparency for thinner bilayers. It is also shown that the band gap is tunable. The maximum band gap value was 4.8 eV. These results reveal that ZnO combined with Al2O3 as bilayers stack can be converted into a dielectric material with enhanced band gap, opening the possibility for new optical and dielectric applications.

  13. Non-volatile Al2O3 Memory using Nanoscale Al-rich Al2O3 Thin Film as a Charge Storage Layer

    NASA Astrophysics Data System (ADS)

    Nakata, Shunji; Saito, Kunio; Shimada, Masaru

    2006-04-01

    This article describes the fabrication process and capacitance-voltage (C-V) characteristics of a new non-volatile Al2O3 memory with nanoscale thin film deposited by electron-cyclotron-resonance sputtering. Al-rich Al2O3 shows characteristics somewhere between Al and Al2O3 in the refractive index and wet etching rate. C-V characteristics of Al-rich Al2O3 memory show a large hysteresis window due to the Al-rich structure, while there is no hysteresis window in the case of stoichiometric Al2O3. This memory is expected to stay non-volatile for several years or more because the capacitance value after writing and erasing operation remained almost unchanged after 4 h at T=85 °C. Also, another new memory structure comprising SiO2/Al2O3 and the Al-rich Al2O3 structure is proposed, which features increased mobility due to the reduction of electron scattering at the Si/Al2O3 interface.

  14. Atomic layer deposition of TiO2 and Al2O3 on nanographite films: structure and field emission properties

    NASA Astrophysics Data System (ADS)

    Kleshch, Victor I.; Ismagilov, Rinat R.; Smolnikova, Elena A.; Obraztsova, Ekaterina A.; Tuyakova, Feruza; Obraztsov, Alexander N.

    2016-03-01

    Atomic layer deposition (ALD) of metal oxides (MO) was used to modify the properties of nanographite (NG) films produced by direct current plasma-enhanced chemical vapor deposition technique. NG films consist of a few layers of graphene flakes (nanowalls) and nanoscrolls homogeneously distributed over a silicon substrate with a predominantly vertical orientation of graphene sheets to the substrate surface. TiO2 and Al2O3 layers, with thicknesses in the range of 50 to 250 nm, were deposited on NG films by ALD. The obtained NG-MO composite materials were characterized by scanning electron microscopy, energy dispersive x-ray analysis, and Raman spectroscopy. It was found that ALD forms a uniform coating on graphene flakes, while on the surface of needle-like nanoscrolls it forms spherical nanoparticles. Field emission properties of the films were measured in a flat vacuum diode configuration. Analysis based on obtained current-voltage characteristics and electrostatic calculations show that emission from NG-TiO2 films is determined by the nanoscrolls protruding from the TiO2 coverage. The TiO2 layers with thicknesses of <200 nm almost do not affect the overall field emission characteristics of the films. At the same time, these layers are able to stabilize the NG films' surface and can lead to an improvement of the NG cold cathode performance in vacuum electronics.

  15. Characterization and prevention of humidity related degradation of atomic layer deposited Al2O3

    NASA Astrophysics Data System (ADS)

    Rückerl, Andreas; Zeisel, Roland; Mandl, Martin; Costina, Ioan; Schroeder, Thomas; Zoellner, Marvin H.

    2017-01-01

    Atomic layer deposited aluminum oxide (ALD-Al2O3) is a dielectric material, which is widely used in organic light emitting diodes in order to prevent their organic layers from humidity related degradation. Unfortunately, there are strong hints that in some cases, ALD-Al2O3 itself is suffering from humidity related degradation. Especially, high temperature and high humidity seem to enhance ALD-Al2O3 degradation strongly. For this reason, the degradation behavior of ALD-Al2O3 films at high temperature and high humidity was investigated in detail and a way to prevent it from degradation was searched. The degradation behavior is analyzed in the first part of this paper. Using infrared absorbance measurements and X-ray diffraction, boehmite (γ-AlOOH) was identified as a degradation product. In the second part of the paper, it is shown that ALD-Al2O3 films can be effectively protected from degradation using a silicon oxide capping. The deposition of very small amounts of silicon in a molecular beam epitaxy system and an X-ray photoelectron spectroscopy investigation of the chemical bonding between the silicon and the ALD-Al2O3 surface led to the conclusion that a silicon termination of the ALD-Al2O3 surface (Al*-O-SiOx) is able to stop humidity related degradation of the underlying ALD-Al2O3 films. The third part of the paper shows that the protection mechanism of the silicon termination is probably due to the strong tendency of silicic acid to resilificate exposed ALD-Al2O3 surfaces. The protective effect of a simple silicon source on an ALD-Al2O3 surface is shown exemplary and the related chemical reactions are presented.

  16. Thermoluminescent response of C-modified Al2O3 thin films deposited by parallel laser ablation plasmas

    NASA Astrophysics Data System (ADS)

    Garcés, J.; Escobar-Alarcón, L.; Gonzalez-Martinez, P. R.; Solís-Casados, D. A.; Romero, S.; Gonzalez-ZAvala, F.; Haro-Poniatowski, E.

    2017-01-01

    Aluminium oxide thin films modified with different amounts of carbon were prepared using a parallel laser ablation plasmas configuration. The effect of the amount of carbon incorporated in the films on their compositional, morphological, structural, and thermoluminescent properties was studied. The results showed that films with different C content, from 11 to 33 at. %, were obtained. The structural characterization revealed the growth of an amorphous material. Surface morphology of the obtained thin films showed smooth surfaces. The films were exposed to UV and gamma radiation (Co-60) in order to study their thermoluminescence response. The results tend to indicate that carbon incorporation into the alumina favours the increase of a high temperature TL peak.

  17. Comparison of ALD and IBS Al2O3 films for high power lasers

    NASA Astrophysics Data System (ADS)

    Liu, Hao; Jensen, Lars; Becker, Jürgen; Wurz, Marc Christopher; Ma, Ping; Ristau, Detlev

    2016-12-01

    Atomic layer deposition (ALD) has been widely studied in Micro-electronics due to its self-terminating property. ALD also grows film coatings with precise thickness and nodular-free structure, which are desirable properties for high power coatings. The depositing process was studied to produce uniform, stable and economic Al2O3 single layers. The layer properties relevant to high power laser industry were studied and compared with IBS Al2O3 single layers. ALD Al2O3 showed a stable growth of 0.104 nm/cycle, band gap energy of 6.5 eV and tensile stress of about 480 MPa. It also showed a low absorption at wavelength 1064 nm within several ppm, and LIDT above 30 J/cm2. These properties are superior to the reference IBS Al2O3 single layers and indicate a high versatility of ALD Al2O3 for high power coatings.

  18. Effects of annealing on properties of Al2O3 monolayer film at 355 nm

    NASA Astrophysics Data System (ADS)

    Tu, Feifei; Wang, Hu; Xing, Huanbin; Zheng, Ruxi; Zhang, Weili; Yi, Kui

    2015-07-01

    Al2O3 monolayer films were deposited on fused silica substrate and K9 glass substrate by electron-beam deposition. Annealing as a general post-treatment was used to enhance the quality of the Al2O3 coatings. The optical properties of the films were analyzed from the transmission spectra of the samples. The composition of the samples before and after annealing were measured by X-ray photoelectron spectroscopy (XPS). According to the analysis of the results, it can be found that the oxidation degree of the coatings increases after annealing in O2 inside coating chamber. The laser-induced damage thresholds of the Al2O3 films can be increased after the annealing process. Finally, the damage morphologies of the Al2O3 coatings were analyzed.

  19. Reduced impurities and improved electrical properties of atomic-layer-deposited HfO2 film grown at a low temperature (100 °C) by Al2O3 incorporation

    NASA Astrophysics Data System (ADS)

    Park, Tae Joo; Byun, Youngchol; Wallace, Robert M.; Kim, Jiyoung

    2016-05-01

    The HfO2 films grown by atomic layer deposition (ALD) at a low temperature (100 °C) necessarily has a large amount of residual impurities due to lack of thermal energy for stable ALD reactions such as ligand removal and oxidation, which degrades various properties. However, Al2O3 incorporation into the film significantly decreased the residual impurities despite of a low growth temperature. The decrease in C impurity is attributed to the reduced oxygen vacancies by the incorporated Al2O3 phase or the high reactivity of Al precursor. Consequently, the electronic band structure of the film, and thereby the electrical properties were improved significantly.

  20. Electrowetting properties of atomic layer deposited Al2O3 decorated silicon nanowires

    NASA Astrophysics Data System (ADS)

    Rajkumar, K.; Rajavel, K.; Cameron, D. C.; Mangalaraj, D.; Rajendrakumar, R. T.

    2015-06-01

    This paper reports the electrowetting properties of liquid droplet on superhydrophobic silicon nanowires with Atomic layer deposited (ALD) Al2O3 as dielectric layer. Silicon wafer were etched by metal assisted wet chemical etching with silver as catalyst. ALD Al2O3 films of 10nm thickness were conformally deposited over silicon nanowires. Al2O3 dielectric film coated silicon nanowires was chemically modified with Trichloro (1H, 1H, 2H, 2H-perfluorooctyl) silane to make it superhydrophobic(SHP). The contact angle was measured and all the samples exhibited superhydrophobic nature with maximum contact angles of 163° and a minimum contact angle hysteresis of 6°. Electrowetting induced a maximum reversible decrease of the contact angle of 20°at 150V in air.

  1. Interface of atomic layer deposited Al2O3 on H-terminated silicon

    NASA Astrophysics Data System (ADS)

    Gao, K. Y.; Speck, F.; Emtsev, K.; Seyller, Th.; Ley, L.; Oswald, M.; Hansch, W.

    2006-07-01

    Al2O3 films 1 to 20 nm thick were deposited as alternative high- gate dielectric on hydrogen-terminated silicon by Atomic Layer Deposition (ALD) and characterized by Synchrotron X-ray Photoelectron Spec-troscopy (SXPS), Fourier Transform Infrared (FTIR) absorption spectroscopy and admittance measure-ments. The SXPS results indicate that about 60% of the original Si-H surface bonds are preserved at the Al2O3/Si interface and this is confirmed by monitoring the Si-H stretching modes by FTIR spectroscopy in the Attenuated Total Reflection (ATR) mode both before and after ALD of Al2O3. The remaining 40% of Si-H bonds are replaced by Si-O bonds as verified by SXPS. In addition, a fraction of a monolayer of SiO2 forms on top of the Al2O3 dielectric during deposition. The presence of OH-groups at a level of 3% of the total oxygen content was detected throughout the Al2O3 layer through a chemically shifted O 1s component in SXPS. Admittance measurements give a dielectric constant of 9.12, but a relatively high density of interface traps between 1011 and 1012 cm-2 eV-1.

  2. Epitaxial Graphene Surface Preparation for Atomic Layer Deposition of Al2O3

    DTIC Science & Technology

    2011-06-01

    j dielectrics such as Al2O3 , HfO2, Ta2O5, and TiO2 , are important for the realization of graphene-based top-gated electronic devices including field... ALD pulse sequencing of NO2-trimethylaluminum (TMA); 16 oxidation of electron beam evaporated metallic Al, Hf, Ti, Ta;17,18 and spin- coating of a... ALD of Al2O3 films in promoting uni- form, high quality oxide deposition. Initial treatments resulted in partial coverage, while the optimized treatment

  3. Influence of Content of Al2O3 on Structure and Properties of Nanocomposite Nb-B-Al-O films.

    PubMed

    Liu, Na; Dong, Lei; Dong, Lei; Yu, Jiangang; Pan, Yupeng; Wan, Rongxin; Gu, Hanqing; Li, Dejun

    2015-12-01

    Nb-B-Al-O nanocomposite films with different power of Al2O3 were successfully deposited on the Si substrate via multi-target magnetron co-sputtering method. The influences of Al2O3's content on structure and properties of obtained nanocomposite films through controlling Al2O3's power were investigated. Increasing the power of Al2O3 can influence the bombarding energy and cause the momentum transfer of NbB2. This can lead to the decreasing content of Al2O3. Furthermore, the whole films showed monocrystalline NbB2's (100) phase, and Al2O3 shaded from amorphous to weak cubic-crystalline when decreasing content of Al2O3. This structure and content changes were proof by X-ray diffraction (XRD) and high-resolution transmission electron microscopy (TEM) and X-ray photoelectron spectroscopy (XPS). When NbB2 grains were far from each other in lower power of Al2O3, the whole films showed a typical nanocomposite microstructure with crystalline NbB2 grains embedded in a matrix of an amorphous Al2O3 phase. Continuing increasing the power of Al2O3, the less content of Al2O3 tended to cause crystalline of cubic-Al2O3 between the close distances of different crystalline NbB2 grains. The appearance of cubic-crystallization Al2O3 can help to raise the nanocomposite films' mechanical properties to some extent. The maximum hardness and elastic modulus were up to 21.60 and 332.78 GPa, which were higher than the NbB2 and amorphous Al2O3 monolithic films. Furthermore, this structure change made the chemistry bond of O atom change from the existence of O-Nb, O-B, and O-Al bonds to single O-Al bond and increased the specific value of Al and O. It also influenced the hardness in higher temperature, which made the hardness variation of different Al2O3 content reduced. These results revealed that it can enhance the films' oxidation resistance properties and keep the mechanical properties at high temperature. The study highlighted the importance of controlling the Al2O3's content to prepare

  4. Uniform Atomic Layer Deposition of Al2O3 on Graphene by Reversible Hydrogen Plasma Functionalization

    PubMed Central

    2017-01-01

    A novel method to form ultrathin, uniform Al2O3 layers on graphene using reversible hydrogen plasma functionalization followed by atomic layer deposition (ALD) is presented. ALD on pristine graphene is known to be a challenge due to the absence of dangling bonds, leading to nonuniform film coverage. We show that hydrogen plasma functionalization of graphene leads to uniform ALD of closed Al2O3 films down to 8 nm in thickness. Hall measurements and Raman spectroscopy reveal that the hydrogen plasma functionalization is reversible upon Al2O3 ALD and subsequent annealing at 400 °C and in this way does not deteriorate the graphene’s charge carrier mobility. This is in contrast with oxygen plasma functionalization, which can lead to a uniform 5 nm thick closed film, but which is not reversible and leads to a reduction of the charge carrier mobility. Density functional theory (DFT) calculations attribute the uniform growth on both H2 and O2 plasma functionalized graphene to the enhanced adsorption of trimethylaluminum (TMA) on these surfaces. A DFT analysis of the possible reaction pathways for TMA precursor adsorption on hydrogenated graphene predicts a binding mechanism that cleans off the hydrogen functionalities from the surface, which explains the observed reversibility of the hydrogen plasma functionalization upon Al2O3 ALD.

  5. Atomic layer deposition of high-density Pt nanodots on Al2O3 film using (MeCp)Pt(Me)3 and O2 precursors for nonvolatile memory applications

    PubMed Central

    2013-01-01

    Pt nanodots have been grown on Al2O3 film via atomic layer deposition (ALD) using (MeCp)Pt(Me)3 and O2 precursors. Influence of the substrate temperature, pulse time of (MeCp)Pt(Me)3, and deposition cycles on ALD Pt has been studied comprehensively by scanning electron microscopy, transmission electron microscopy, and X-ray photoelectron spectroscopy. Therefore, Pt nanodots with a high density of approximately 2 × 1012 cm-2 have been achieved under optimized conditions: 300°C substrate temperature, 1 s pulse time of (MeCp)Pt(Me)3, and 70 deposition cycles. Further, metal-oxide-semiconductor capacitors with Pt nanodots embedded in ALD Al2O3 dielectric have been fabricated and characterized electrically, indicating noticeable electron trapping capacity, efficient programmable and erasable characteristics, and good charge retention. PMID:23413837

  6. Exploring metalorganic chemical vapor deposition of Si-alloyed Al2O3 dielectrics using disilane

    NASA Astrophysics Data System (ADS)

    Chan, Silvia H.; Keller, Stacia; Koksaldi, Onur S.; Gupta, Chirag; DenBaars, Steven P.; Mishra, Umesh K.

    2017-04-01

    The alloying of Al2O3 films with Si is a promising route to improve gate dielectric properties in Si- and wide-bandgap- based MOS devices. Here we present a comprehensive investigation of alloyed film growth by metalorganic chemical vapor deposition (MOCVD) using trimethylaluminum, disilane, and oxygen precursors over a variety of temperature and flow conditions. Binary growth rates of Al2O3 and SiO2 were evaluated to explain the aggregate growth kinetics of Si-alloyed Al2O3 films, and refractive indices were used to monitor Si incorporation efficiencies. The temperature dependence of the reaction rate of disilane with oxygen was found to be similar to that of trimethylaluminum and oxygen, leading to well-behaved deposition behavior in the kinetic and mass-transport controlled growth regimes. Compositional predictability and stability was achieved over a wider growth space with disilane-based growths as compared to previous work, which used silane as the Si precursor instead. In situ (Al,Si)O/n-GaN MOS gate stacks were grown and showed increasing reduction of net positive fixed charges with higher Si composition.

  7. The impact of ultrathin Al2O3 films on the electrical response of p-Ge/Al2O3/HfO2/Au MOS structures

    NASA Astrophysics Data System (ADS)

    Botzakaki, M. A.; Skoulatakis, G.; Kennou, S.; Ladas, S.; Tsamis, C.; Georga, S. N.; Krontiras, C. A.

    2016-09-01

    It is well known that the most critical issue in Ge CMOS technology is the successful growth of high-k gate dielectrics on Ge substrates. The high interface quality of Ge/high-k dielectric is connected with advanced electrical responses of Ge based MOS devices. Following this trend, atomic layer deposition deposited ultrathin Al2O3 and HfO2 films were grown on p-Ge. Al2O3 acts as a passivation layer between p-Ge and high-k HfO2 films. An extensive set of p-Ge/Al2O3/HfO2 structures were fabricated with Al2O3 thickness ranging from 0.5 nm to 1.5 nm and HfO2 thickness varying from 2.0 nm to 3.0 nm. All structures were characterized by x-ray photoelectron spectroscopy (XPS) and AFM. XPS analysis revealed the stoichiometric growth of both films in the absence of Ge sub-oxides between p-Ge and Al2O3 films. AFM analysis revealed the growth of smooth and cohesive films, which exhibited minimal roughness (~0.2 nm) comparable to that of clean bare p-Ge surfaces. The electrical response of all structures was analyzed by C-V, G-V, C-f, G-f and J-V characteristics, from 80 K to 300 K. It is found that the incorporation of ultrathin Al2O3 passivation layers between p-Ge and HfO2 films leads to superior electrical responses of the structures. All structures exhibit well defined C-V curves with parasitic effects, gradually diminishing and becoming absent below 170 K. D it values were calculated at each temperature, using both Hill-Coleman and Conductance methods. Structures of p-Ge/0.5 nm Al2O3/2.0 nm HfO2/Au, with an equivalent oxide thickness (EOT) equal to 1.3 nm, exhibit D it values as low as ~7.4  ×  1010 eV-1 cm-2. To our knowledge, these values are among the lowest reported. J-V measurements reveal leakage currents in the order of 10-1 A cm-2, which are comparable to previously published results for structures with the same EOT. A complete mapping of the energy distribution of D its into the energy bandgap of p-Ge, from the valence band

  8. Atomic layer deposition of Al2O3 on NF3-pre-treated graphene

    NASA Astrophysics Data System (ADS)

    Junige, Marcel; Oddoy, Tim; Yakimova, Rositsa; Darakchieva, Vanya; Wenger, Christian; Lupina, Grzegorz; Kitzmann, Julia; Albert, Matthias; Bartha, Johann W.

    2015-06-01

    Graphene has been considered for a variety of applications including novel nanoelectronic device concepts. However, the deposition of ultra-thin high-k dielectrics on top of graphene has still been challenging due to graphene's lack of dangling bonds. The formation of large islands and leaky films has been observed resulting from a much delayed growth initiation. In order to address this issue, we tested a pre-treatment with NF3 instead of XeF2 on CVD graphene as well as epitaxial graphene monolayers prior to the Atomic Layer Deposition (ALD) of Al2O3. All experiments were conducted in vacuo; i. e. the pristine graphene samples were exposed to NF3 in the same reactor immediately before applying 30 (TMA-H2O) ALD cycles and the samples were transferred between the ALD reactor and a surface analysis unit under high vacuum conditions. The ALD growth initiation was observed by in-situ real-time Spectroscopic Ellipsometry (irtSE) with a sampling rate above 1 Hz. The total amount of Al2O3 material deposited by the applied 30 ALD cycles was cross-checked by in-vacuo X-ray Photoelectron Spectroscopy (XPS). The Al2O3 morphology was determined by Atomic Force Microscopy (AFM). The presence of graphene and its defect status was examined by in-vacuo XPS and Raman Spectroscopy before and after the coating procedure, respectively.

  9. Role of Ge and Si substrates in higher-k tetragonal phase formation and interfacial properties in cyclical atomic layer deposition-anneal Hf1-xZrxO2/Al2O3 thin film stacks

    NASA Astrophysics Data System (ADS)

    Dey, Sonal; Tapily, Kandabara; Consiglio, Steven; Clark, Robert D.; Wajda, Cory S.; Leusink, Gert J.; Woll, Arthur R.; Diebold, Alain C.

    2016-09-01

    Using a five-step atomic layer deposition (ALD)-anneal (DADA) process, with 20 ALD cycles of metalorganic precursors followed by 40 s of rapid thermal annealing at 1073 K, we have developed highly crystalline Hf1-xZrxO2 (0 ≤ x ≤ 1) thin films (<7 nm) on ˜1 nm ALD Al2O3 passivated Ge and Si substrates for applications in higher-k dielectric metal oxide semiconductor field effect transistors below 10 nm technology node. By applying synchrotron grazing incidence x-ray d-spacing maps, x-ray photoelectron spectroscopy (XPS), and angle-resolved XPS, we have identified a monoclinic to tetragonal phase transition with increasing ZrO2 content, elucidated the role of the Ge vs Si substrates in complete tetragonal phase formation (CTPF), and determined the interfacial characteristics of these technologically relevant films. The ZrO2 concentration required for CTPF is lower on Ge than on Si substrates (x ˜ 0.5 vs. x ˜ 0.86), which we attribute as arising from the growth of an ultra-thin layer of metal germanates between the Hf1-xZrxO2 and Al2O3/Ge, possibly during the first deposition and annealing cycle. Due to Ge-induced tetragonal phase stabilization, the interfacial metal germanates could act as a template for the subsequent preferential growth of the tetragonal Hf1-xZrxO2 phase following bottom-up crystallization during the DADA ALD process. We surmise that the interfacial metal germanate layer also function as a diffusion barrier limiting excessive Ge uptake into the dielectric film. An ALD Al2O3 passivation layer of thickness ≥1.5 nm is required to minimize Ge diffusion for developing highly conformal and textured HfO2 based higher-k dielectrics on Ge substrates using the DADA ALD process.

  10. Atomic layer deposition of highly-doped Er:Al2O3 and Tm:Al2O3 for silicon-based waveguide amplifiers (Conference Presentation)

    NASA Astrophysics Data System (ADS)

    Roenn, John; Karvonen, Lasse; Pyymäki-Perros, Alexander; Peyghambarian, Nasser; Lipsanen, Harri; Säynätjoki, Antti; Sun, Zhipei

    2016-05-01

    Recently, rare-earth doped waveguide amplifiers (REDWAs) have drawn significant attention as a promising solution to on-chip amplification of light in silicon photonics and integrated optics by virtue of their high excited state lifetime (up to 10 ms) and broad emission spectrum (up to 200 nm) at infrared wavelengths. In the family of rare-earths, at least erbium, holmium, thulium, neodymium and ytterbium have been demonstrated to be good candidates for amplifier operation at moderate concentrations (< 0.1 %). However, efficient amplifier operation in REDWAs is a very challenging task because high concentration of ions (<0.1%) is required in order to produce reasonable amplification over short device length. Inevitably, high concentration of ions leads to energy-transfer between neighboring ions, which results as decreased gain and increased noise in the amplifier system. It has been shown that these energy-transfer mechanisms in highly-doped gain media are inversely proportional to the sixth power of the distance between the ions. Therefore, novel fabrication techniques with the ability to control the distribution of the rare-earth ions within the gain medium are urgently needed in order to fabricate REDWAs with high efficiency and low noise. Here, we show that atomic layer deposition (ALD) is an excellent technique to fabricate highly-doped (<1%) RE:Al2O3 gain materials by using its nanoscale engineering ability to delicately control the incorporation of RE ions during the deposition. In our experiment, we fabricated Er:Al2O3 and Tm:Al2O3 thin films with ALD by varying the concentration of RE ions from 1% to 7%. By measuring the photoluminescence response of the fabricated samples, we demonstrate that it is possible to incorporate up to 5% of either Er- or Tm-ions in Al2O3 host before severe quenching occurs. We believe that this technique can be extended to other RE ions as well. Therefore, our results show the exceptionality of ALD as a deposition technique for

  11. The FTIR studies of gels and thin films of Al2O3-TiO2 and Al2O3-TiO2-SiO2 systems.

    PubMed

    Adamczyk, Anna; Długoń, Elżbieta

    2012-04-01

    In this work, samples in form of bulk ones and thin films were obtained using the sol-gel method. The bulk samples were heated at different temperatures (500 °C, 850 °C and 1100 °C) corresponding to the annealing process of coatings, deposited on different substrates by dipping and pulling out samples from the proper sol with the stable speed. Thin films of both Al2O3-TiO2 and Al2O3-TiO2-SiO2 systems were deposited on carbon, steel and titanium substrates in two different ways: as single layers obtained from Al2O3 sol, TiO2 sol and Al2O3 sol or deposited as mixed coatings from Al2O3-TiO2 sol as well as Al2O3-TiO2-SiO2 one. All bulk samples were studied by the FTIR spectroscopy and the X-ray diffractometry while thin films were also investigated by the electron microscopy. In the IR spectra of Al2O3-TiO2 samples, as well as gels and coatings, bands due to the vibrations of AlO bonds of the octahedrally and tetrahedrally coordinated aluminum were observed. The IR spectra of samples of Al2O3-TiO2-SiO2 system differ from that of Al2O3-TiO2 ones in presence of bands assigned to the SiO bond vibrations and in positions of bands due to AlO bond vibrations. In all spectra of bulk samples and coatings, the positions of TiO bond vibrations were ascribed basing on the IR spectra of the pure anatase and rutile.

  12. Al2O3 on Black Phosphorus by Atomic Layer Deposition: An in Situ Interface Study.

    PubMed

    Zhu, Hui; McDonnell, Stephen; Qin, Xiaoye; Azcatl, Angelica; Cheng, Lanxia; Addou, Rafik; Kim, Jiyoung; Ye, Peide D; Wallace, Robert M

    2015-06-17

    In situ "half cycle" atomic layer deposition (ALD) of Al2O3 was carried out on black phosphorus ("black-P") surfaces with modified phosphorus oxide concentrations. X-ray photoelectron spectroscopy is employed to investigate the interfacial chemistry and the nucleation of the Al2O3 on black-P surfaces. This work suggests that exposing a sample that is initially free of phosphorus oxide to the ALD precursors does not result in detectable oxidation. However, when the phosphorus oxide is formed on the surface prior to deposition, the black-P can react with both the surface adventitious oxygen contamination and the H2O precursor at a deposition temperature of 200 °C. As a result, the concentration of the phosphorus oxide increases after both annealing and the atomic layer deposition process. The nucleation rate of Al2O3 on black-P is correlated with the amount of oxygen on samples prior to the deposition. The growth of Al2O3 follows a "substrate inhibited growth" behavior where an incubation period is required. Ex situ atomic force microscopy is also used to investigate the deposited Al2O3 morphologies on black-P where the Al2O3 tends to form islands on the exfoliated black-P samples. Therefore, surface functionalization may be needed to get a conformal coverage of Al2O3 on the phosphorus oxide free samples.

  13. Protection of Polymer from Atomic-Oxygen Erosion using Al2O3 Atomic Layer Deposition Coatings

    DTIC Science & Technology

    2008-01-01

    coatings other than Al2O3 . Multilayer ALD films of Al2O3 / TiO2 or Al2O3 / ZnO could protect against both O atoms and... Al2O3 growth. The steady-state Al2O3 ALD growth rate after nucleation is ∼1.2 Å per AB cycle [19,26]. The polyimide substrates were coated with Al2O3 ALD ...apparatus is shown in Fig. 1. This apparatus has Fig. 2. Mass change of polyimide substrates coated with varying numbers of Al2O3 ALD AB cycles

  14. Space-charge-controlled field emission model of current conduction through Al2O3 films

    NASA Astrophysics Data System (ADS)

    Hiraiwa, Atsushi; Matsumura, Daisuke; Kawarada, Hiroshi

    2016-02-01

    This study proposes a model for current conduction in metal-insulator-semiconductor (MIS) capacitors, assuming the presence of two sheets of charge in the insulator, and derives analytical formulae of field emission (FE) currents under both negative and positive bias. Since it is affected by the space charge in the insulator, this particular FE differs from the conventional FE and is accordingly named the space-charge-controlled (SCC) FE. The gate insulator of this study was a stack of atomic-layer-deposition Al2O3 and underlying chemical SiO2 formed on Si substrates. The current-voltage (I-V) characteristics simulated using the SCC-FE formulae quantitatively reproduced the experimental results obtained by measuring Au- and Al-gated Al2O3/SiO2 MIS capacitors under both biases. The two sheets of charge in the Al2O3 films were estimated to be positive and located at a depth of greater than 4 nm from the Al2O3/SiO2 interface and less than 2 nm from the gate. The density of the former is approximately 1 × 1013 cm-2 in units of electronic charge, regardless of the type of capacitor. The latter forms a sheet of dipoles together with image charges in the gate and hence causes potential jumps of 0.4 V and 1.1 V in the Au- and Al-gated capacitors, respectively. Within a margin of error, this sheet of dipoles is ideally located at the gate/Al2O3 interface and effectively reduces the work function of the gate by the magnitude of the potential jumps mentioned above. These facts indicate that the currents in the Al2O3/SiO2 MIS capacitors are enhanced as compared to those in ideal capacitors and that the currents in the Al-gated capacitors under negative bias (electron emission from the gate) are more markedly enhanced than those in the Au-gated capacitors. The larger number of gate-side dipoles in the Al-gated capacitors is possibly caused by the reaction between the Al and Al2O3, and therefore gate materials that do not react with underlying gate insulators should be chosen

  15. Crystalline gamma-Al2O3 physical vapour deposition-coating for steel thixoforging tools.

    PubMed

    Bobzin, K; Hirt, G; Bagcivan, N; Khizhnyakova, L; Ewering, M

    2011-10-01

    The process of thixoforming, which has been part of many researches during the last decades, combines the advantages of forging and casting for the shaping of metallic components. But due to the high temperatures of semi-solid steel alloys high demands on the tools are requested. To resists the thermal and mechanical loads (wear, friction, thermal and thermomechanical fatigue) protecting thin films are necessary. In this regard crystalline gamma-Al2O3 deposited via Physical Vapour Deposition (PVD) is a promising candidate: It exhibits high thermal stability, high oxidation resistance and high hot hardness. In the present work the application of a (Ti, Al)N/gamma-Al2O3 coating deposited by means of Magnetron Sputter Ion Plating in an industrial coating unit is presented. The coating was analysed by means of Rockwell test, nanoindentation, and Scanning Electron Microscopy (SEM). The coated tool was tested in thixoforging experiments with steel grade X210CrW12 (AlSI D6). The surface of the coated dies was examined with Scanning Electron Microscope (SEM) after 22, 42, 90 and 170 forging cycles.

  16. Thermal stability of surface and interface structure of atomic layer deposited Al2O3 on H-terminated silicon

    NASA Astrophysics Data System (ADS)

    Gao, K. Y.; Speck, F.; Emtsev, K.; Seyller, Th.; Ley, L.

    2007-11-01

    Using the atomic layer deposition technique, 1.2nm Al2O3 films were deposited as high-k gate dielectric layer on hydrogen-terminated silicon and annealed in vacuum and pure hydrogen in order to elucidate the effects of growth and annealing on the structure of film, interface, and surface. As analytical tools, high resolution core level spectroscopy using synchrotron radiation as variable photon source and Fourier Transform Infrared absorption spectroscopy in the attenuated total refraction mode were employed. For Al2O3 on H-terminated Si(111) and (100) surfaces the Si-H bonds are preserved at the interface, while Si-O-Al bonds provide the atomically abrupt interface between Al2O3 and Si. The chemical and structural integrity of the interface is maintained upon annealing except for a gradual loss of Si-H bonds. Growth of a SiO2 layer is observed after annealing, that is unambiguously located at the Al2O3 surface and not at the interface. Stress-induced emission of Si atoms from the interface is identified as the source of SiO2 based on a substantial broadening of the Si 2p core lines. A thermally induced reaction between Si and Al2O3 to form volatile SiO and Al2O is suggested to be responsible for the significant thickness reduction of Al2O3 that accompanies annealing at temperatures of 750°C. Conclusions for the likely effects of forming gas anneals on Al2O3/Si are drawn from this work.

  17. CoFe2/Al2O3/PMNPT multiferroic heterostructures by atomic layer deposition

    NASA Astrophysics Data System (ADS)

    Zhou, Ziyao; Grocke, Garrett; Yanguas-Gil, Angel; Wang, Xinjun; Gao, Yuan; Sun, Nianxiang; Howe, Brandon; Chen, Xing

    2016-05-01

    Multiferroic materials and applications allow electric bias control of magnetism or magnetic bias control of polarization, enabling fast, compact, energy-efficient devices in RF/microwave communication systems such as filters, shifters, and antennas; electronics devices such as inductors and capacitors; and other magnetic material related applications including sensors and memories. In this manuscript, we utilize atomic layer deposition technology to grow magnetic CoFe metallic thin films onto PMNPT, with a ˜110 Oe electric field induced ferromagnetic resonance field shift in the CoFe/Al2O3/PMNPT multiferroic heterostructure. Our work demonstrates an atomic layer deposition fabricated multiferroic heterostructure with significant tunability and shows that the unique thin film growth mechanism will benefit integrated multiferroic application in near future.

  18. Luminescent properties of Al2O3:Ce single crystalline films under synchrotron radiation excitation

    NASA Astrophysics Data System (ADS)

    Zorenko, Yu.; Zorenko, T.; Gorbenko, V.; Savchyn, V.; Voznyak, T.; Fabisiak, K.; Zhusupkalieva, G.; Fedorov, A.

    2016-09-01

    The paper is dedicated to study the luminescent and scintillation properties of the Al2O3:Ce single crystalline films (SCF) grown by LPE method onto saphire substrates from PbO based flux. The structural quality of SCF samples was investigated by XRD method. For characterization of luminescent properties of Al2O3:Ce SCFs the cathodoluminescence spectra, scintillation light yield (LY) and decay kinetics under excitation by α-particles of Pu239 source were used. We have found that the scintillation LY of Al2O3:Ce SCF samples is relatively large and can reach up to 50% of the value realized in the reference YAG:Ce SCF. Using the synchrotron radiation excitation in the 3.7-25 eV range at 10 K we have also determined the basic parameters of the Ce3+ luminescence in Al2O3 host.

  19. Growth and characterization of Al2O3 films on fluorine functionalized epitaxial graphene

    NASA Astrophysics Data System (ADS)

    Robinson, Zachary R.; Jernigan, Glenn G.; Wheeler, Virginia D.; Hernández, Sandra C.; Eddy, Charles R.; Mowll, Tyler R.; Ong, Eng Wen; Ventrice, Carl A.; Geisler, Heike; Pletikosic, Ivo; Yang, Hongbo; Valla, Tonica

    2016-08-01

    Intelligent engineering of graphene-based electronic devices on SiC(0001) requires a better understanding of processes used to deposit gate-dielectric materials on graphene. Recently, Al2O3 dielectrics have been shown to form conformal, pinhole-free thin films by functionalizing the top surface of the graphene with fluorine prior to atomic layer deposition (ALD) of the Al2O3 using a trimethylaluminum (TMA) precursor. In this work, the functionalization and ALD-precursor adsorption processes have been studied with angle-resolved photoelectron spectroscopy, low energy electron diffraction, and X-ray photoelectron spectroscopy. It has been found that the functionalization process has a negligible effect on the electronic structure of the graphene, and that it results in a twofold increase in the adsorption of the ALD-precursor. In situ TMA-dosing and XPS studies were also performed on three different Si(100) substrates that were terminated with H, OH, or dangling Si-bonds. This dosing experiment revealed that OH is required for TMA adsorption. Based on those data along with supportive in situ measurements that showed F-functionalization increases the amount of oxygen (in the form of adsorbed H2O) on the surface of the graphene, a model for TMA-adsorption on graphene is proposed that is based on a reaction of a TMA molecule with OH.

  20. Effect of Al2O3 encapsulation on multilayer MoSe2 thin-film transistors

    NASA Astrophysics Data System (ADS)

    Lee, Hyun Ah; Yeoul Kim, Seong; Kim, Jiyoung; Choi, Woong

    2017-03-01

    We report the effect of Al2O3 encapsulation on the device performance of multilayer MoSe2 thin-film transistors based on statistical investigation of 29 devices with a SiO2 bottom-gate dielectric. On average, Al2O3 encapsulation by atomic layer deposition increased the field-effect mobility from 10.1 cm2 V‑1 s‑1 to 14.8 cm2 V‑1 s‑1, decreased the on/off-current ratio from 8.5  ×  105 to 2.3  ×  105 and negatively shifted the threshold voltage from  ‑1.1 V to  ‑8.1 V. Calculation based on the Y-function method indicated that the enhancement of intrinsic carrier mobility occurred independently of the reduction of contact resistance after Al2O3 encapsulation. Furthermore, contrary to previous reports in the literature, we observe a negligible effect of thermal annealing on contact resistance and carrier mobility during the atomic layer deposition of Al2O3. These results demonstrate that Al2O3 encapsulation is a useful method for improving the carrier mobility of multilayer MoSe2 transistors, providing important implications on the application of MoSe2 and other 2D materials into high-performance transistors.

  1. Anisotropic temperature-dependent thermal conductivity by an Al2O3 interlayer in Al2O3/ZnO superlattice films

    NASA Astrophysics Data System (ADS)

    Lee, Won-Yong; Lee, Jung-Hoon; Ahn, Jae-Young; Park, Tae-Hyun; Park, No-Won; Kim, Gil-Sung; Park, Jin-Seong; Lee, Sang-Kwon

    2017-03-01

    The thermal conductivity of superlattice films is generally anisotropic and should be studied separately in the in-plane and cross-plane directions of the films. However, previous works have mostly focused on the cross-plane thermal conductivity because the electrons and phonons in the cross-plane direction of superlattice films may result in much stronger interface scattering than that in the in-plane direction. Nevertheless, it is highly desirable to perform systematic studies on the effect of interface formation in semiconducting superlattice films on both in-plane and cross-plane thermal conductivities. In this study, we determine both the in-plane and cross-plane thermal conductivities of Al2O3 (AO)/ZnO superlattice films grown by atomic layer deposition (ALD) on SiO2/Si substrates in the temperature range of 50–300 K by the four-point-probe 3-ω method. Our experimental results indicate that the formation of an atomic AO layer (0.82 nm) significantly contributes to the decrease of the cross-plane thermal conductivity of the AO/ZnO superlattice films compared with that of AO/ZnO thin films. The cross-plane thermal conductivity (0.26–0.63 W m‑1 K‑1 of the AO/ZnO superlattice films (with an AO layer of ∼0.82 nm thickness) is approximately ∼150%–370% less than the in-plane thermal conductivity (0.96–1.19 W m‑1 K‑1) of the corresponding film, implying significant anisotropy. This indicates that the suppression of the cross-plane thermal conductivity is mainly attributed to the superlattice, rather than the nanograin columnar structure in the films. In addition, we theoretically analyzed strong anisotropic behavior of the in-plane and cross-plane thermal conductivities of the AO/ZnO superlattice films in terms of temperature dependence.

  2. Anisotropic temperature-dependent thermal conductivity by an Al2O3 interlayer in Al2O3/ZnO superlattice films.

    PubMed

    Lee, Won-Yong; Lee, Jung-Hoon; Ahn, Jae-Young; Park, Tae-Hyun; Park, No-Won; Kim, Gil-Sung; Park, Jin-Seong; Lee, Sang-Kwon

    2017-03-10

    The thermal conductivity of superlattice films is generally anisotropic and should be studied separately in the in-plane and cross-plane directions of the films. However, previous works have mostly focused on the cross-plane thermal conductivity because the electrons and phonons in the cross-plane direction of superlattice films may result in much stronger interface scattering than that in the in-plane direction. Nevertheless, it is highly desirable to perform systematic studies on the effect of interface formation in semiconducting superlattice films on both in-plane and cross-plane thermal conductivities. In this study, we determine both the in-plane and cross-plane thermal conductivities of Al2O3 (AO)/ZnO superlattice films grown by atomic layer deposition (ALD) on SiO2/Si substrates in the temperature range of 50-300 K by the four-point-probe 3-ω method. Our experimental results indicate that the formation of an atomic AO layer (0.82 nm) significantly contributes to the decrease of the cross-plane thermal conductivity of the AO/ZnO superlattice films compared with that of AO/ZnO thin films. The cross-plane thermal conductivity (0.26-0.63 W m(-1) K(-1) of the AO/ZnO superlattice films (with an AO layer of ∼0.82 nm thickness) is approximately ∼150%-370% less than the in-plane thermal conductivity (0.96-1.19 W m(-1) K(-1)) of the corresponding film, implying significant anisotropy. This indicates that the suppression of the cross-plane thermal conductivity is mainly attributed to the superlattice, rather than the nanograin columnar structure in the films. In addition, we theoretically analyzed strong anisotropic behavior of the in-plane and cross-plane thermal conductivities of the AO/ZnO superlattice films in terms of temperature dependence.

  3. Image reconstruction algorithm for optically stimulated luminescence 2D dosimetry using laser-scanned Al2O3:C and Al2O3:C,Mg films

    NASA Astrophysics Data System (ADS)

    Ahmed, M. F.; Schnell, E.; Ahmad, S.; Yukihara, E. G.

    2016-10-01

    The objective of this work was to develop an image reconstruction algorithm for 2D dosimetry using Al2O3:C and Al2O3:C,Mg optically stimulated luminescence (OSL) films imaged using a laser scanning system. The algorithm takes into account parameters associated with detector properties and the readout system. Pieces of Al2O3:C films (~8 mm  ×  8 mm  ×  125 µm) were irradiated and used to simulate dose distributions with extreme dose gradients (zero and non-zero dose regions). The OSLD film pieces were scanned using a custom-built laser-scanning OSL reader and the data obtained were used to develop and demonstrate a dose reconstruction algorithm. The algorithm includes corrections for: (a) galvo hysteresis, (b) photomultiplier tube (PMT) linearity, (c) phosphorescence, (d) ‘pixel bleeding’ caused by the 35 ms luminescence lifetime of F-centers in Al2O3, (e) geometrical distortion inherent to Galvo scanning system, and (f) position dependence of the light collection efficiency. The algorithm was also applied to 6.0 cm  ×  6.0 cm  ×  125 μm or 10.0 cm  ×  10.0 cm  ×  125 µm Al2O3:C and Al2O3:C,Mg films exposed to megavoltage x-rays (6 MV) and 12C beams (430 MeV u-1). The results obtained using pieces of irradiated films show the ability of the image reconstruction algorithm to correct for pixel bleeding even in the presence of extremely sharp dose gradients. Corrections for geometric distortion and position dependence of light collection efficiency were shown to minimize characteristic limitations of this system design. We also exemplify the application of the algorithm to more clinically relevant 6 MV x-ray beam and a 12C pencil beam, demonstrating the potential for small field dosimetry. The image reconstruction algorithm described here provides the foundation for laser-scanned OSL applied to 2D dosimetry.

  4. Image reconstruction algorithm for optically stimulated luminescence 2D dosimetry using laser-scanned Al2O3:C and Al2O3:C,Mg films.

    PubMed

    Ahmed, M F; Schnell, E; Ahmad, S; Yukihara, E G

    2016-10-21

    The objective of this work was to develop an image reconstruction algorithm for 2D dosimetry using Al2O3:C and Al2O3:C,Mg optically stimulated luminescence (OSL) films imaged using a laser scanning system. The algorithm takes into account parameters associated with detector properties and the readout system. Pieces of Al2O3:C films (~8 mm  ×  8 mm  ×  125 µm) were irradiated and used to simulate dose distributions with extreme dose gradients (zero and non-zero dose regions). The OSLD film pieces were scanned using a custom-built laser-scanning OSL reader and the data obtained were used to develop and demonstrate a dose reconstruction algorithm. The algorithm includes corrections for: (a) galvo hysteresis, (b) photomultiplier tube (PMT) linearity, (c) phosphorescence, (d) 'pixel bleeding' caused by the 35 ms luminescence lifetime of F-centers in Al2O3, (e) geometrical distortion inherent to Galvo scanning system, and (f) position dependence of the light collection efficiency. The algorithm was also applied to 6.0 cm  ×  6.0 cm  ×  125 μm or 10.0 cm  ×  10.0 cm  ×  125 µm Al2O3:C and Al2O3:C,Mg films exposed to megavoltage x-rays (6 MV) and (12)C beams (430 MeV u(-1)). The results obtained using pieces of irradiated films show the ability of the image reconstruction algorithm to correct for pixel bleeding even in the presence of extremely sharp dose gradients. Corrections for geometric distortion and position dependence of light collection efficiency were shown to minimize characteristic limitations of this system design. We also exemplify the application of the algorithm to more clinically relevant 6 MV x-ray beam and a (12)C pencil beam, demonstrating the potential for small field dosimetry. The image reconstruction algorithm described here provides the foundation for laser-scanned OSL applied to 2D dosimetry.

  5. The chemisorption of H2O, HCOOH and CH3COOH on thin amorphous films of Al2O3

    NASA Technical Reports Server (NTRS)

    Lewis, B. F.; Weinberg, W. H.; Mosesman, M.

    1974-01-01

    Investigation of the irreversible chemisorption of water, formic acid and acetic acid on a thin amorphous aluminum oxide film, using inelastic tunneling spectroscopy. All of the tunnel junctions employed were Al-Al2O3-Pb junctions with the adsorbate on the Al2O3 surface between the Al2O3 and the Pb electrode. The results obtained include the finding that all Al2O3 surfaces prepared by oxidation of Al have free CH groups present on them.

  6. Nucleation and growth mechanisms of Al2O3 atomic layer deposition on synthetic polycrystalline MoS2

    NASA Astrophysics Data System (ADS)

    Zhang, H.; Chiappe, D.; Meersschaut, J.; Conard, T.; Franquet, A.; Nuytten, T.; Mannarino, M.; Radu, I.; Vandervorst, W.; Delabie, A.

    2017-02-01

    Two-dimensional (2D) semiconducting transition metal dichalcogenides (TMDs) are of great interest for applications in nano-electronic devices. Their incorporation requires the deposition of nm-thin and continuous high-k dielectric layers on the 2D TMDs. Atomic layer deposition (ALD) of high-k dielectric layers is well established on Si surfaces: the importance of a high nucleation density for rapid layer closure is well known and the nucleation mechanisms have been thoroughly investigated. In contrast, the nucleation of ALD on 2D TMD surfaces is less well understood and a quantitative analysis of the deposition process is lacking. Therefore, in this work, we investigate the growth of Al2O3 (using Al(CH3)3/H2O ALD) on MoS2 whereby we attempt to provide a complete insight into the use of several complementary characterization techniques, including X-ray photo-electron spectroscopy, elastic recoil detection analysis, scanning electron microscopy, and time-of-flight secondary ion mass spectrometry. To reveal the inherent reactivity of MoS2, we exclude the impact of surface contamination from a transfer process by direct Al2O3 deposition on synthetic MoS2 layers obtained by a high temperature sulfurization process. It is shown that Al2O3 ALD on the MoS2 surface is strongly inhibited at temperatures between 125°C and 300°C, with no growth occurring on MoS2 crystal basal planes and selective nucleation only at line defects or grain boundaries at MoS2 top surface. During further deposition, the as-formed Al2O3 nano-ribbons grow in both vertical and lateral directions. Eventually, a continuous Al2O3 film is obtained by lateral growth over the MoS2 crystal basal plane, with the point of layer closure determined by the grain size at the MoS2 top surface and the lateral growth rate. The created Al2O3/MoS2 interface consists mainly of van der Waals interactions. The nucleation is improved by contributions of reversible adsorption on the MoS2 basal planes by using low

  7. Uniaxial magnetic anisotropy in Pd/Fe bilayers on Al2O3 (0001) induced by oblique deposition

    NASA Astrophysics Data System (ADS)

    Chi, Chiao-Sung; Wang, Bo-Yao; Pong, Way-Faung; Ho, Tsung-Ying; Tsai, Cheng-Jui; Lo, Fang-Yuh; Chern, Ming-Yau; Lin, Wen-Chin

    2012-06-01

    This study reports the preparation of self-organized 1-dimensional magnetic structures of Fe on Al2O3 (0001) by oblique deposition. The x-ray diffraction (XRD) results in this study show the preferred (110) texture of the Fe films. XRD and extended x-ray adsorption fine structure measurements indicate larger oblique deposition angle (65°) leads to more disorder in the Fe crystalline structure. After capping with a Pd overlayer, the Pd/Fe/Al2O3 (0001) still exhibits uniaxial magnetic anisotropy induced by the underlying 1-dimensional Fe nanostructure. This uniaxial magnetic anisotropy changes with the variation in Fe thickness and oblique deposition angle. These results clearly indicate the feasibility of manipulating uniaxial magnetic anisotropy and crystalline order through the oblique deposition of magnetic materials.

  8. Electrochemical promotion of propane oxidation on Pt deposited on a dense β"-Al2O3 ceramic Ag+ conductor

    NASA Astrophysics Data System (ADS)

    Tsampas, Michail; Kambolis, Anastasios; Obeid, Emil; Lizarraga, Leonardo; Sapountzi, Foteini; Vernoux, Philippe

    2013-08-01

    A new kind of electrochemical catalyst based on a Pt porous catalyst film deposited on a β"-Al2O3 ceramic Ag+ conductor was developed and evaluated during propane oxidation. It was observed that upon anodic polarization, the rate of propane combustion was significantly electropromoted up to 400%. Moreover, for the first time, exponential increase of the catalytic rate was evidenced during galvanostatic transient experiment in excellent agreement with EPOC equation.

  9. Pt-Al2O3 dual layer atomic layer deposition coating in high aspect ratio nanopores.

    PubMed

    Pardon, Gaspard; Gatty, Hithesh K; Stemme, Göran; van der Wijngaart, Wouter; Roxhed, Niclas

    2013-01-11

    Functional nanoporous materials are promising for a number of applications ranging from selective biofiltration to fuel cell electrodes. This work reports the functionalization of nanoporous membranes using atomic layer deposition (ALD). ALD is used to conformally deposit platinum (Pt) and aluminum oxide (Al(2)O(3)) on Pt in nanopores to form a metal-insulator stack inside the nanopore. Deposition of these materials inside nanopores allows the addition of extra functionalities to nanoporous materials such as anodic aluminum oxide (AAO) membranes. Conformal deposition of Pt on such materials enables increased performances for electrochemical sensing applications or fuel cell electrodes. An additional conformal Al(2)O(3) layer on such a Pt film forms a metal-insulator-electrolyte system, enabling field effect control of the nanofluidic properties of the membrane. This opens novel possibilities in electrically controlled biofiltration. In this work, the deposition of these two materials on AAO membranes is investigated theoretically and experimentally. Successful process parameters are proposed for a reliable and cost-effective conformal deposition on high aspect ratio three-dimensional nanostructures. A device consisting of a silicon chip supporting an AAO membrane of 6 mm diameter and 1.3 μm thickness with 80 nm diameter pores is fabricated. The pore diameter is reduced to 40 nm by a conformal deposition of 11 nm Pt and 9 nm Al(2)O(3) using ALD.

  10. Enhanced carrier mobility of multilayer MoS2 thin-film transistors by Al2O3 encapsulation

    NASA Astrophysics Data System (ADS)

    Kim, Seong Yeoul; Park, Seonyoung; Choi, Woong

    2016-10-01

    We report the effect of Al2O3 encapsulation on the carrier mobility and contact resistance of multilayer MoS2 thin-film transistors by statistically investigating 70 devices with SiO2 bottom-gate dielectric. After Al2O3 encapsulation by atomic layer deposition, calculation based on Y-function method indicates that the enhancement of carrier mobility from 24.3 cm2 V-1 s-1 to 41.2 cm2 V-1 s-1 occurs independently from the reduction of contact resistance from 276 kΩ.μm to 118 kΩ.μm. Furthermore, contrary to the previous literature, we observe a negligible effect of thermal annealing on contact resistance and carrier mobility during the atomic layer deposition of Al2O3. These results demonstrate that Al2O3 encapsulation is a useful method of improving the carrier mobility of multilayer MoS2 transistors, providing important implications on the application of MoS2 and other two-dimensional materials into high-performance transistors.

  11. Electrical characteristics of SrTiO3/Al2O3 laminated film capacitors

    NASA Astrophysics Data System (ADS)

    Peng, Yong; Yao, Manwen; Chen, Jianwen; Xu, Kaien; Yao, Xi

    2016-07-01

    The electrical characteristics of SrTiO3/Al2O3 (160 nm up/90 nm down) laminated film capacitors using the sol-gel process have been investigated. SrTiO3 is a promising and extensively studied high-K dielectric material, but its leakage current property is poor. SrTiO3/Al2O3 laminated films can effectively suppress the demerits of pure SrTiO3 films under low electric field, but the leakage current value reaches to 0.1 A/cm2 at higher electric field (>160 MV/m). In this study, a new approach was applied to reduce the leakage current and improve the dielectric strength of SrTiO3/Al2O3 laminated films. Compared to laminated films with Au top electrodes, dielectric strength of laminated films with Al top electrodes improves from 205 MV/m to 322 MV/m, simultaneously the leakage current maintains the same order of magnitude (10-4 A/cm2) until the breakdown occurs. The above electrical characteristics are attributed to the anodic oxidation reaction in origin, which can repair the defects of laminated films at higher electric field. The anodic oxidation reactions have been confirmed by the corresponding XPS measurement and the cross sectional HRTEM analysis. This work provides a new approach to fabricate dielectrics with high dielectric strength and low leakage current.

  12. Twin symmetry texture of energetically condensed niobium thin films on sapphire substrate (a-plane Al2O3)

    NASA Astrophysics Data System (ADS)

    Zhao, X.; Phillips, L.; Reece, C. E.; Seo, Kang; Krishnan, M.; Valderrama, E.

    2011-08-01

    An energetic condensation technique, cathodic arc discharge deposition, is used to grow epitaxial Niobium (Nb) thin films on a-plane sapphire (hexagonal-closed-packed Al2O3) at moderate substrate heating temperature (<400 °C). The epitaxial Nb(110)/Al2O3(1,1,-2,0) thin films reached a maximum residual resistance ratio (RRR) value 214, despite using a reactor-grade Nb cathode source whose RRR was only 30. The measurements suggest that the film's density of impurities and structural defects are lower when compared to Nb films produced by other techniques, such as magnetron sputtering, e-beam evaporation or molecular-beam-epitaxy. At lower substrate temperature, textured polycrystalline Nb thin films were created, and the films might have twin symmetry grains with {110} orientations in-plane. The texture was revealed by x-ray diffraction pole figures. The twin symmetry might be caused by a combination effect of the Nb/Al2O3 three-dimensional epitaxial relationship ("3D-Registry" Claassen's nomenclature) and the "Volmer-Weber" (Island) growth model. However, pole figures obtained by electron backscattering diffraction (EBSD) found no twin symmetry on the thin films' topmost surface (˜50 nm in depth). The EBSD pole figures showed only one Nb{110} crystal plane orientation. A possible mechanism is suggested to explain the differences between the bulk (XRD) and surface (EBSD) pole figures.

  13. Impact of Al2O3 on the aggregation and deposition of graphene oxide.

    PubMed

    Ren, Xuemei; Li, Jiaxing; Tan, Xiaoli; Shi, Weiqun; Chen, Changlun; Shao, Dadong; Wen, Tao; Wang, Longfei; Zhao, Guixia; Sheng, Guoping; Wang, Xiangke

    2014-05-20

    To assess the environmental behavior and impact of graphene oxide (GO) on living organisms more accurately, the aggregation of GO and its deposition on Al2O3 particles were systematically investigated using batch experiments across a wide range of solution chemistries. The results indicated that the aggregation of GO and its deposition on Al2O3 depended on the solution pH and the types and concentrations of electrolytes. MgCl2 and CaCl2 destabilized GO because of their effective charge screening and neutralization, and the presence of NaH2PO4 and poly(acrylic acid) (PAA) improved the stability of GO with the increase in pH values as a result of electrostatic interactions and steric repulsion. Specifically, the dissolution of Al2O3 contributed to GO aggregation at relatively low pH or high pH values. Results from this study provide critical information for predicting the fate of GO in aquatic-terrestrial transition zones, where aluminum (hydro)oxides are present.

  14. Reduced defect density at the CZTSSe/CdS interface by atomic layer deposition of Al2O3

    NASA Astrophysics Data System (ADS)

    Erkan, Mehmet Eray; Chawla, Vardaan; Scarpulla, Michael A.

    2016-05-01

    The greatest challenge for improving the power conversion efficiency of Cu2ZnSn(S,Se)4 (CZTSSe)/CdS/ZnO thin film solar cells is increasing the open circuit voltage (VOC). Probable leading causes of the VOC deficit in state-of-the-art CZTSSe devices have been identified as bulk recombination, band tails, and the intertwined effects of CZTSSe/CdS band offset, interface defects, and interface recombination. In this work, we demonstrate the modification of the CZTSSe absorber/CdS buffer interface following the deposition of 1 nm-thick Al2O3 layers by atomic layer deposition (ALD) near room temperature. Capacitance-voltage profiling and quantum efficiency measurements reveal that ALD-Al2O3 interface modification reduces the density of acceptor-like states at the heterojunction resulting in reduced interface recombination and wider depletion width. Indications of increased VOC resulting from the modification of the heterojunction interface as a result of ALD-Al2O3 treatment are presented. These results, while not conclusive for application to state-of-the-art high efficiency CZTSSe devices, suggest the need for further studies as it is probable that interface recombination contributes to reduced VOC even in such devices.

  15. Thermal conductivity of amorphous Al2O3/TiO2 nanolaminates deposited by atomic layer deposition

    NASA Astrophysics Data System (ADS)

    Ali, Saima; Juntunen, Taneli; Sintonen, Sakari; Ylivaara, Oili M. E.; Puurunen, Riikka L.; Lipsanen, Harri; Tittonen, Ilkka; Hannula, Simo-Pekka

    2016-11-01

    The thermophysical properties of Al2O3/TiO2 nanolaminates deposited by atomic layer deposition (ALD) are studied as a function of bilayer thickness and relative TiO2 content (0%-100%) while the total nominal thickness of the nanolaminates was kept at 100 nm. Cross-plane thermal conductivity of the nanolaminates is measured at room temperature using the nanosecond transient thermoreflectance method. Based on the measurements, the nanolaminates have reduced thermal conductivity as compared to the pure amorphous thin films, suggesting that interfaces have a non-negligible effect on thermal transport in amorphous nanolaminates. For a fixed number of interfaces, we find that approximately equal material content of Al2O3 and TiO2 produces the lowest value of thermal conductivity. The thermal conductivity reduces with increasing interface density up to 0.4 nm-1, above which the thermal conductivity is found to be constant. The value of thermal interface resistance approximated by the use of diffuse mismatch model was found to be 0.45 m2 K GW-1, and a comparative study employing this value supports the interpretation of non-negligible interface resistance affecting the overall thermal conductivity also in the amorphous limit. Finally, no clear trend in thermal conductivity values was found for nanolaminates grown at different deposition temperatures, suggesting that the temperature in the ALD process has a non-trivial while modest effect on the overall thermal conductivity in amorphous nanolaminates.

  16. Thermal conductivity of amorphous Al2O3/TiO2 nanolaminates deposited by atomic layer deposition.

    PubMed

    Ali, Saima; Juntunen, Taneli; Sintonen, Sakari; Ylivaara, Oili M E; Puurunen, Riikka L; Lipsanen, Harri; Tittonen, Ilkka; Hannula, Simo-Pekka

    2016-11-04

    The thermophysical properties of Al2O3/TiO2 nanolaminates deposited by atomic layer deposition (ALD) are studied as a function of bilayer thickness and relative TiO2 content (0%-100%) while the total nominal thickness of the nanolaminates was kept at 100 nm. Cross-plane thermal conductivity of the nanolaminates is measured at room temperature using the nanosecond transient thermoreflectance method. Based on the measurements, the nanolaminates have reduced thermal conductivity as compared to the pure amorphous thin films, suggesting that interfaces have a non-negligible effect on thermal transport in amorphous nanolaminates. For a fixed number of interfaces, we find that approximately equal material content of Al2O3 and TiO2 produces the lowest value of thermal conductivity. The thermal conductivity reduces with increasing interface density up to 0.4 nm(-1), above which the thermal conductivity is found to be constant. The value of thermal interface resistance approximated by the use of diffuse mismatch model was found to be 0.45 m(2) K GW(-1), and a comparative study employing this value supports the interpretation of non-negligible interface resistance affecting the overall thermal conductivity also in the amorphous limit. Finally, no clear trend in thermal conductivity values was found for nanolaminates grown at different deposition temperatures, suggesting that the temperature in the ALD process has a non-trivial while modest effect on the overall thermal conductivity in amorphous nanolaminates.

  17. Formation and stability of crystalline and amorphous Al2O3 layers deposited on Ga2O3 nanowires by atomic layer epitaxy

    NASA Astrophysics Data System (ADS)

    Katz, M. B.; Twigg, M. E.; Prokes, S. M.

    2016-09-01

    Although the crystalline α and γ phases are the most stable forms of alumina, small-diameter (<6 nm) nanoparticles are known to be completely amorphous, due to the surface energy being correspondingly lower for the less stable non-crystalline phase. Al2O3 films with a thickness of 5 nm grown by low temperature (200 °C) atomic layer deposition (ALD) on small-diameter (<20 nm) Ga2O3 nanowires (NWs), however, are identified by transmission electron microscopy as belonging to the α, γ, and possibly θ crystalline phases of Al2O3, while films deposited on larger diameter (>20 nm) NWs are found to be amorphous. Indeed, until recently, all Al2O3, films deposited by low-temperature ALD using trimethylaluminum and water have been reported to be amorphous, regardless of film thickness or substrate. The formation of a crystalline ALD film can be understood in terms of the energetics of misfit dislocations that maintain the registry between the ALD film and the NW substrate, as well as the influence of strain and surface energy. The decreasing energy of co-axial misfit dislocations with NW diameter results in a corresponding decrease in the contribution of the Al2O3/Ga2O3 interface to the free energy, while the interfacial energy for an amorphous film is independent of the NW diameter. Therefore, for NW cores of sufficiently small diameter, the free energy contribution of the Al2O3/Ga2O3 interface is smaller for crystalline films than for amorphous films, thereby favoring the formation of crystalline films for small-diameter NWs. For ALD Al2O3 films of 10 nm thickness deposited on small-diameter Ga2O3 NWs, however, only the first 5 nm of the ALD film is found to be crystalline, possibly due to well-established kinetic limitations to low temperature epitaxial growth.

  18. Au/n-InP Schottky diodes using an Al2O3 interfacial layer grown by atomic layer deposition

    NASA Astrophysics Data System (ADS)

    Kim, Hogyoung; Kim, Min Soo; Yoon, Seung Yu; Choi, Byung Joon

    2017-02-01

    We investigated the effect of an Al2O3 interfacial layer grown by atomic layer deposition on the electrical properties of Au Schottky contacts to n-type InP. Considering barrier inhomogeneity, modified Richardson plots yielded a Richardson constant of 8.4 and 7.5 Acm-2K-2, respectively, for the sample with and without the Al2O3 interlayer (theoretical value of 9.4 Acm-2K-2 for n-type InP). The dominant reverse current flow for the sample with an Al2O3 interlayer was found to be Poole-Frenkel emission. From capacitance-voltage measurements, it was observed that the capacitance for the sample without the Al2O3 interlayer was frequency dependent. Sputter-induced defects as well as structural defects were passivated effectively with an Al2O3 interlayer.

  19. Effective passivation of defects in Ge-rich SiGe-on-insulator substrates by Al 2O 3 deposition and subsequent post-annealing

    NASA Astrophysics Data System (ADS)

    Yang, Haigui; Iyota, Masatoshi; Ikeura, Shogo; Wang, Dong; Nakashima, Hiroshi

    2011-06-01

    A method of Al 2O 3 deposition and subsequent post-deposition annealing (Al 2O 3-PDA) was proposed to passivate electrically active defects in Ge-rich SiGe-on-insulator (SGOI) substrates, which were fabricated using Ge condensation by dry oxidation. The effect of Al 2O 3-PDA on defect passivation was clarified by surface analysis and electrical evaluation. It was found that Al 2O 3-PDA could not only suppress the surface reaction during Al-PDA in our previous work [Yang H, Wang D, Nakashima H, Hirayama K, Kojima S, Ikeura S. Defect control by Al-deposition and the subsequent post-annealing for SiGe-on-insulator substrates with different Ge fractions. Thin Solid Films 2010; 518: 2342-5.], but could also effectively passivate p-type defects generated during Ge condensation. The concentration in the range of 10 16-10 18 cm -3 for defect-induced acceptors and holes in Ge-rich SGOI drastically decreased after Al 2O 3-PDA. As a result of defect passivation, the electrical characteristics of both back-gate p-channel and n-channel metal-oxide-semiconductor field-effect transistors fabricated on Ge-rich SGOI were greatly improved after Al 2O 3-PDA.

  20. Effects of plasma-enhanced chemical vapor deposition (PECVD) on the carrier lifetime of Al2O3 passivation stack

    NASA Astrophysics Data System (ADS)

    Cho, Kuk-Hyun; Cho, Young Joon; Chang, Hyo Sik; Kim, Kyung-Joong; Song, Hee Eun

    2015-09-01

    We investigated the effect on the minority carrier lifetime of atomic layer deposition (ALD) Al2O3 passivation by a plasma-enhanced chemical vapor deposition (PECVD) SiON layer in Si/Al2O3/SiON-passivated structure. The lifetime variation of the Al2O3/SiON stack layer was found to depend on both the plasma power and the deposition temperature during the PECVD SiON process and to show better thermal stability than the Al2O3/SiNx:H stack under the same deposition conditions. The lifetime after a high-temperature firing process was improved dramatically at the PECVD deposition temperature of 200 °C. Our results provide a significant clue to reason for the improvement of the passivation performance for passivated emitter and rear contact (PERC) silicon solar cells.

  1. Low-Temperature Process for Atomic Layer Chemical Vapor Deposition of an Al2O3 Passivation Layer for Organic Photovoltaic Cells.

    PubMed

    Kim, Hoonbae; Lee, Jihye; Sohn, Sunyoung; Jung, Donggeun

    2016-05-01

    Flexible organic photovoltaic (OPV) cells have drawn extensive attention due to their light weight, cost efficiency, portability, and so on. However, OPV cells degrade quickly due to organic damage by water vapor or oxygen penetration when the devices are driven in the atmosphere without a passivation layer. In order to prevent damage due to water vapor or oxygen permeation into the devices, passivation layers have been introduced through methods such as sputtering, plasma enhanced chemical vapor deposition, and atomic layer chemical vapor deposition (ALCVD). In this work, the structural and chemical properties of Al2O3 films, deposited via ALCVD at relatively low temperatures of 109 degrees C, 200 degrees C, and 300 degrees C, are analyzed. In our experiment, trimethylaluminum (TMA) and H2O were used as precursors for Al2O3 film deposition via ALCVD. All of the Al2O3 films showed very smooth, featureless surfaces without notable defects. However, we found that the plastic flexible substrate of an OPV device passivated with 300 degrees C deposition temperature was partially bended and melted, indicating that passivation layers for OPV cells on plastic flexible substrates need to be formed at temperatures lower than 300 degrees C. The OPV cells on plastic flexible substrates were passivated by the Al2O3 film deposited at the temperature of 109 degrees C. Thereafter, the photovoltaic properties of passivated OPV cells were investigated as a function of exposure time under the atmosphere.

  2. Microwave plasma-assisted ALD of Al2O3 thin films: a study on the substrate temperature dependence of various parameters of interest

    NASA Astrophysics Data System (ADS)

    Thomas, Subin; Nalini, Savitha; Kumar, K. Rajeev

    2017-03-01

    This study utilizes microwave plasma-assisted atomic layer deposition (MPALD) in remote mode to deposit Al2O3 thin films with increased growth per cycle (GPC). Optical emission spectroscopy (OES) was used to identify the plasma configuration in the ALD chamber. MPALD-Al2O3 thin films were deposited at temperatures ranging from room temperature to 200 °C and the electrical parameters were investigated with Al/Al2O3/p-Si metal oxide semiconductor (MOS) structures. A GPC of 0.24 nm was observed for the films deposited at room temperature. The fixed oxide charge densities ( N fix) in all films were of the order of 1012 cm-2. The interface state density ( D it) exhibited a distinct minimum for the films deposited at 100 °C. The dependence of built-in voltage, N fix, and D it on Al2O3 deposition temperature was investigated. This can be used as a measure of the electrical applicability of these thin films.

  3. Electrical characteristics of multilayered HfO2-Al2O3 charge trapping stacks deposited by ALD

    NASA Astrophysics Data System (ADS)

    Spassov, D.; Paskaleva, A.; Guziewicz, E.; Luka, G.; AKrajewski, T.; Kopalko, K.; Wierzbicka, A.; Blagoev, B.

    2016-10-01

    Electrical and charge trapping properties of atomic layer deposited HfO2-Al2O3 multilayer stacks with two different Al2O3 sublayer thicknesses were investigated regarding their implementation in charge trapping non-volatile memories. The effect of post deposition annealing in oxygen at 600°C is also studied. The decreasing Al2O3 thickness increases the stack's dielectric constant and the density of the initial positive oxide charge. The initial oxide charge increases after annealing to ∼6×1012 cm-2 and changes its sign to negative for the stacks with thicker Al2O3. The annealing enhances the dielectric constant of the stacks and reduces their thickness preserving the amorphous status. Nevertheless the annealing is not beneficial for the stacks with thicker Al2O3 as it considerably increases leakage currents. Conduction mechanisms in stacks were considered in terms of hopping conduction at low electric fields, and Fowler- Nordheim tunnelling, Schottky emission and Poole-Frenkel effect at higher ones. Maximum memory windows of about 12 and 16V were obtained for the as-grown structures with higher and lower Al2O3 content, respectively. In latter case additional improvement (the memory window increase up to 23V) is achieved by the annealing.

  4. Structural and mechanical characterization of Al/Al2O3 nanotube thin film on TiV alloy

    NASA Astrophysics Data System (ADS)

    Sarraf, M.; Zalnezhad, E.; Bushroa, A. R.; Hamouda, A. M. S.; Baradaran, S.; Nasiri-Tabrizi, B.; Rafieerad, A. R.

    2014-12-01

    In this study, the fabrication and characterization of Al/Al2O3 nanotubular arrays on Ti-6Al-4V substrate were carried out. To this end, aluminum thin films were deposited as a first coating layer by direct current (DC) magnetron sputtering with the coating conditions of 300 W, 150 °C and 75 V substrate bias voltage. Al2O3 nanotube array as a second layer was grown on the Al layer by electrochemical anodisation at the constant potential of 20 V within different time periods in an electrolyte solution. For annealing the coated substrates, plasma treatment (PT) technique was utilized under various conditions to get the best adhesion strength of coating to the substrate. To characterize the coating layers, micro scratch test, Vickers hardness and field emission of scanning electron microscopy (FESEM) were used. Results show that after the deposition of pure aluminum on the substrate the scratch length, load and failure point were 794.37 μm, 1100 mN and 411.43 μm, respectively. After PT, the best adhesion strength (2038 mN) was obtained at RF power of 60 W. With the increase of the RF power up to 80 W, a reduction in adhesion strength was observed (1525.22 mN). From the microstructural point of view, a homogenous porous structure with an average pore size of 40-60 nm was formed after the anodisation for 10-45 min. During PT, the porous structure was converted to dense alumina layer when the RF power rose from 40 to 80 W. This led to an increase in hardness value from 2.7 to 3.4 GPa. Based on the obtained data, the RF power of 60 W was the optimum condition for plasma treatment of Al/Al2O3 nanotubular arrays on Ti-6Al-4V substrate.

  5. Quartz crystal microbalance studies of Al2O3 atomic layer deposition using trimethylaluminum and water at 125 degrees C.

    PubMed

    Wind, R A; George, S M

    2010-01-28

    Al(2)O(3) atomic layer deposition (ALD) growth with Al(CH(3))(3) (trimethylaluminum (TMA)) and H(2)O as the reactants was examined at the relatively low temperature of 125 degrees C using quartz crystal microbalance (QCM) measurements. The total Al(2)O(3) ALD mass gain per cycle (MGPC) and MGPCs during the individual TMA and H(2)O reactions were measured versus TMA and H(2)O exposures. The Al(2)O(3) MGPC increased with increasing H(2)O and TMA exposures at fixed TMA and H(2)O exposures, respectively. However, the TMA and H(2)O reactions were not completely self-limiting. The slower surface reaction kinetics at lower temperature may require very long exposures for the reactions to reach completion. The Al(2)O(3) MGPCs increased quickly versus H(2)O exposure and slowly reached limiting values that were only weakly dependent on the TMA doses. Small TMA exposures were also sufficient for the Al(2)O(3) MGPCs to reach different limiting values for different H(2)O doses. The TMA MGPCs increased for higher TMA exposures at all H(2)O exposures. In contrast, the H(2)O MGPCs decreased for higher TMA exposures at all H(2)O exposures. This decrease may occur from more dehydroxylation at larger hydroxyl coverages after the H(2)O exposures. The hydroxyl coverage after the H(2)O exposure was dependent only on the H(2)O exposure. The Al(2)O(3) MGPC was also linearly dependent on the hydroxyl coverage after the H(2)O dose. Both the observed hydroxyl coverage versus H(2)O exposure and the Al(2)O(3) ALD growth versus H(2)O and TMA exposures were fit using modified Langmuir adsorption isotherm expressions where the pressures are replaced with exposures. These results should be useful for understanding low-temperature Al(2)O(3) ALD, which is important for coating organic, polymeric, and biological substrates.

  6. CROSS-DISCIPLINARY PHYSICS AND RELATED AREAS OF SCIENCE AND TECHNOLOGY: Excellent Passivation of p-Type Si Surface by Sol-Gel Al2O3 Films

    NASA Astrophysics Data System (ADS)

    Xiao, Hai-Qing; Zhou, Chun-Lan; Cao, Xiao-Ning; Wang, Wen-Jing; Zhao, Lei; Li, Hai-Ling; Diao, Hong-Wei

    2009-08-01

    Al2O3 films with a thickness of about 100 nm synthesized by spin coating and thermally treated are applied for field-induced surface passivation of p-type crystalline silicon. The level of surface passivation is determined by techniques based on photoconductance. An effective surface recombination velocity below 100 cm/s is obtained on 10Ω ·cm p-type c-Si wafers (Cz Si). A high density of negative fixed charges in the order of 1012 cm-2 is detected in the Al2O3 films and its impact on the level of surface passivation is demonstrated experimentally. Furthermore, a comparison between the surface passivation achieved for thermal SiO2 and plasma enhanced chemical vapor deposition SiNx:H films on the same c-Si is presented. The high negative fixed charge density explains the excellent passivation of p-type c-Si by Al2O3.

  7. Conduction mechanisms in thin atomic layer deposited Al2O3 layers

    NASA Astrophysics Data System (ADS)

    Spahr, Holger; Montzka, Sebastian; Reinker, Johannes; Hirschberg, Felix; Kowalsky, Wolfgang; Johannes, Hans-Hermann

    2013-11-01

    Thin Al2O3 layers of 2-135 nm thickness deposited by thermal atomic layer deposition at 80 °C were characterized regarding the current limiting mechanisms by increasing voltage ramp stress. By analyzing the j(U)-characteristics regarding ohmic injection, space charge limited current (SCLC), Schottky-emission, Fowler-Nordheim-tunneling, and Poole-Frenkel-emission, the limiting mechanisms were identified. This was performed by rearranging and plotting the data in a linear scale, such as Schottky-plot, Poole-Frenkel-plot, and Fowler-Nordheim-plot. Linear regression then was applied to the data to extract the values of relative permittivity from Schottky-plot slope and Poole-Frenkel-plot slope. From Fowler-Nordheim-plot slope, the Fowler-Nordheim-energy-barrier was extracted. Example measurements in addition to a statistical overview of the results of all investigated samples are provided. Linear regression was applied to the region of the data that matches the realistic values most. It is concluded that ohmic injection and therefore SCLC only occurs at thicknesses below 12 nm and that the Poole-Frenkel-effect is no significant current limiting process. The extracted Fowler-Nordheim-barriers vary in the range of up to approximately 4 eV but do not show a specific trend. It is discussed whether the negative slope in the Fowler-Nordheim-plot could in some cases be a misinterpreted trap filled limit in the case of space charge limited current.

  8. Growth of Polarity-Controlled ZnO Films on (0001) Al2O3

    NASA Astrophysics Data System (ADS)

    Park, J. S.; Chang, J. H.; Minegishi, T.; Lee, H. J.; Park, S. H.; Im, I. H.; Hanada, T.; Hong, S. K.; Cho, M. W.; Yao, T.

    2008-05-01

    The polarity control of ZnO films grown on (0001) Al2O3 substrates by plasma-assisted molecular-beam epitaxy (P-MBE) was achieved by using a novel CrN buffer layer. Zn-polar ZnO films were obtained by using a Zn-terminated CrN buffer layer, while O-polar ZnO films were achieved by using a Cr2O3 layer formed by O-plasma exposure of a CrN layer. The mechanism of polarity control was proposed. Optical and structural quality of ZnO films was characterized by high-resolution X-ray diffraction and photoluminescence (PL) spectroscopy. Low-temperature PL spectra of Zn-polar and O-polar samples show dominant bound exciton (I8) and strong free exciton emissions. Finally, one-dimensional periodic structures consisting of Zn-polar and O-polar ZnO films were simultaneously grown on the same substrate. The periodic inversion of polarity was confirmed in terms of growth rate, surface morphology, and piezo response microscopy (PRM) measurement.

  9. Enhancement of the photoluminescence in Er-doped Al2O3 fabricated by atomic layer deposition

    NASA Astrophysics Data System (ADS)

    Rönn, John; Karvonen, Lasse; Pyymäki-Perros, Alexander; Peyghambarian, Nasser; Lipsanen, Harri; Säynätjoki, Antti; Sun, Zhipei

    2016-02-01

    We show the enhancement of the photoluminescence at λ = 1:5 μm in highly-doped (> 1021 cm-3) Er-Al2O3 samples by controlling the vertical distance between the Er-ions using atomic layer deposition (ALD) technique. Er2O3 and Al2O3 were deposited on top of silicon in an alternating fashion with ALD. Five Er2O3-Al2O3 samples were fabricated by keeping the amount of Er2O3 constant but changing the thickness of the Al2O3-layers between the Er2O3-layers. The PL spectra of the samples reveal that the PL signal enhances up to 90% when the vertical distance (the number of Al2O3-layers) between the Er-ions increases. The PL enhancement can be related to the reduction of up-conversion signal at 532 and 650 nm in the Er-ions. Our results demonstrate that ALD is an excellent technique to fabricate and to optimize Er-doped materials due to its unique depositions properties.

  10. The origin of low water vapor transmission rates through Al2O3/ZrO2 nanolaminate gas-diffusion barriers grown by atomic layer deposition

    NASA Astrophysics Data System (ADS)

    Meyer, J.; Schmidt, H.; Kowalsky, W.; Riedl, T.; Kahn, A.

    2010-06-01

    This paper reports on thin film gas-diffusion barriers consisting of Al2O3/ZrO2 nanolaminates (NL) grown by low-temperature (80 °C) atomic layer deposition. We show that reliable barriers with water vapor transmission rates of 3.2×10-4 g/(m2 day), measured at 80 °C and 80% relative humidity, can be realized with very thin layers down to 40 nm. We determine that ZrO2 acts as anticorrosion element in our NL. Furthermore, we demonstrate by x-ray photoemission spectroscopy that an aluminate phase is formed at the interfaces between Al2O3 and ZrO2 sublayers, which additionally improves the gas-diffusion barrier due to a densification of the layer system. These Al2O3/ZrO2 NLs prepared at low temperatures hold considerable promises for application in organic electronics and beyond.

  11. Enhanced TC in granular and thin film Al-Al2O3 nanostructures

    NASA Astrophysics Data System (ADS)

    Higgins, J. S.; Greene, R. L.

    It is known since the 1970s that the superconducting transition temperature of granular aluminum films can be as high as two to three times the transition temperature of bulk aluminum, depending on the grain size and how strongly the nanometer size grains are connected1,2. As the strength of the grain connectivity becomes increasingly weak, the enhanced TC is suppressed. The mechanism behind this enhancement is still under debate. Recently, work on larger aluminum nanoparticles (18nm) embedded in an insulating Al2O3 matrix showed an onset of the superconducting transition as high as three times that of bulk aluminum3. In this situation, the Al grains are electrically disconnected and in a regime far removed from that of the granular films. Here we compare the two situations through electronic and thermal measurements in order to help elucidate the mechanism behind the enhancements. 1S. Pracht, et al., arXiv:1508.04270v1 [cond-mat.supr-con] (2015). 2G. Deutscher, New Superconductors From Granular to High TC, New Jersey: World Scientific, 2006, p. 72-74. 3V. N. Smolyaninova, et al., Sci. Rep. 5, 15777 (2015). Funding by NSF DMR # 1410665.

  12. Analysis of the co-deposition of Al2O3 particles with nickel by an electrolytic route: The influence of organic additives presence and Al2O3 concentration

    NASA Astrophysics Data System (ADS)

    Temam, H. B.; Temam, E. G.

    2016-04-01

    Alloy coatings were prepared by co-deposition of Al2O3 particles in Ni matrix on carbon steel substrate from nickel chloride bath in which metallic powders were held in suspension. The influence of metal powder amount in the bath on chemical composition, morphology, thickness, microhardness and corrosion behavior of obtained coatings, has been investigated. It was shown that the presence of Al2O3 particles in deposit greatly improves the hardness and the wear resistance of alloy coatings. Characterization by microanalysis (EDX) of the various deposits elaborated confirms that the rate of particles incorporated increases as the concentration of solid particles increasing. The results showed that the presence of organic additives in Ni-Al2O3 electrolyte deposition led to an increase in the hardness and corrosion resistance of the deposits.

  13. Boat-like Au nanoparticles embedded mesoporous γ-Al2O3 films: an efficient SERS substrate

    NASA Astrophysics Data System (ADS)

    Dandapat, Anirban; Pramanik, Sourav; Bysakh, Sandip; De, Goutam

    2013-07-01

    Boat-like Au nanoparticles (NPs) have been synthesized within the mesoporous γ-Al2O3 films. First, mesoporous γ-Al2O3 film was prepared using aluminum alkoxide derived boehmite sol in the presence of CTAB as structure directing agent. The film was heat-treated at 500 °C to obtain γ-Al2O3 film with an average pore diameter of 4.3 nm. HAuCl4 solution was then soaked into the porous film followed by heat-treatment at 500 °C to generate Au NPs. The blue-colored films so obtained were characterized by UV-visible spectroscopy, grazing incidence X-ray diffraction, FESEM, and TEM studies. FESEM and TEM studies reveal the formation boat-like Au NPs in γ-Al2O3 film matrix. Cross-sectional FESEM shows the thickness of the films to be 2.2 μm. These nanocomposite films were used as a unique surface-enhanced Raman scattering (SERS) substrate for easy detection of low concentration (10-8 M) analyte (methylene blue) molecule. Boat-like shape of Au NPs have several edges and junctions that contain high density of hotspots to exhibit very high SERS signals. Due to such shape of Au NPs, the films also show strong absorption in the visible-NIR region that would extend the use of the films in heat-absorbing and biomedical applications.

  14. Porous α-Al2O3 thermal barrier coatings with dispersed Pt particles prepared by cathode plasma electrolytic deposition

    NASA Astrophysics Data System (ADS)

    Wang, Peng; He, Ye-dong; Deng, Shun-jie; Zhang, Jin

    2016-01-01

    Porous α-Al2O3 thermal barrier coatings (TBCs) containing dispersed Pt particles were prepared by cathode plasma electrolytic deposition (CPED). The influence of the Pt particles on the microstructure of the coatings and the CPED process were studied. The prepared coatings were mainly composed of α-Al2O3. The average thickness of the coatings was approximately 100 μm. Such single-layer TBCs exhibited not only excellent high-temperature cyclic oxidation and spallation resistance, but also good thermal insulation properties. Porous α-Al2O3 TBCs inhibit further oxidation of alloy substrates because of their extremely low oxygen diffusion rate, provide good thermal insulation because of their porous structure, and exhibit excellent mechanical properties because of the toughening effect of the Pt particles and because of stress relaxation induced by deformation of the porous structure.

  15. Passivation of type II InAs/GaSb superlattice photodetectors with atomic layer deposited Al2O3

    NASA Astrophysics Data System (ADS)

    Salihoglu, Omer; Muti, Abdullah; Kutluer, Kutlu; Tansel, Tunay; Turan, Rasit; Kocabas, Coskun; Aydinli, Atilla

    2012-06-01

    We have achieved significant improvement in the electrical performance of the InAs/GaSb midwave infrared photodetector (MWIR) by using atomic layer deposited (ALD) aluminium oxide (Al2O3) as a passivation layer. Plasma free and low operation temperature with uniform coating of ALD technique leads to a conformal and defect free coverage on the side walls. This conformal coverage of rough surfaces also satisfies dangling bonds more efficiently while eliminating metal oxides in a self cleaning process of the Al2O3 layer. Al2O3 passivated and unpassivated diodes were compared for their electrical and optical performances. For passivated diodes the dark current density was improved by an order of magnitude at 77 K. The zero bias responsivity and detectivity was 1.33 A/W and 1.9 x 1013 Jones, respectively at 4 μm and 77 K. Quantum efficiency (QE) was determined as %41 for these detectors.

  16. Dynamic Friction Performance of a Pneumatic Cylinder with Al2O3 Film on Cylinder Surface.

    PubMed

    Chang, Ho; Lan, Chou-Wei; Wang, Hao-Xian

    2015-11-01

    A friction force system is proposed for accurately measuring friction force and motion properties produced by reciprocating motion of piston in a pneumatic cylinder. In this study, the proposed system is used to measure the effects of lubricating greases of different viscosities on the friction properties of pneumatic cylinder, and improvement of stick-slip motion for the cylinder bore by anodizing processes. A servo motor-driven ball screw is used to drive the pneumatic cylinder to be tested and to measure the change in friction force of the pneumatic cylinder. Experimental results show, that under similar test conditions, the lubricating grease with viscosity VG100 is best suited for measuring reciprocating motion of the piston of pneumatic cylinder. The wear experiment showed that, in the Al2O3 film obtained at a preset voltage 40 V in the anodic process, the friction coefficient and hardness decreased by 55% and increased by 274% respectively, thus achieving a good tribology and wear resistance. Additionally, the amplitude variation in the friction force of the pneumatic cylinder wall that received the anodizing treatment was substantially reduced. Additionally, the stick-slip motion of the pneumatic cylinder during low-speed motion was substantially improved.

  17. Si-rich Al2O3 films grown by RF magnetron sputtering: structural and photoluminescence properties versus annealing treatment

    PubMed Central

    2013-01-01

    Silicon-rich Al2O3 films (Six(Al2O3)1−x) were co-sputtered from two separate silicon and alumina targets onto a long silicon oxide substrate. The effects of different annealing treatments on the structure and light emission of the films versus x were investigated by means of spectroscopic ellipsometry, X-ray diffraction, micro-Raman scattering, and micro-photoluminescence (PL) methods. The formation of amorphous Si clusters upon the deposition process was found for the films with x ≥ 0.38. The annealing treatment of the films at 1,050°C to 1,150°C results in formation of Si nanocrystallites (Si-ncs). It was observed that their size depends on the type of this treatment. The conventional annealing at 1,150°C for 30 min of the samples with x = 0.5 to 0.68 leads to the formation of Si-ncs with the mean size of about 14 nm, whereas rapid thermal annealing of similar samples at 1,050°C for 1 min showed the presence of Si-ncs with sizes of about 5 nm. Two main broad PL bands were observed in the 500- to 900-nm spectral range with peak positions at 575 to 600 nm and 700 to 750 nm accompanied by near-infrared tail. The low-temperature measurement revealed that the intensity of the main PL band did not change with cooling contrary to the behavior expected for quantum confined Si-ncs. Based on the analysis of PL spectrum, it is supposed that the near-infrared PL component originates from the exciton recombination in the Si-ncs. However, the most intense emission in the visible spectral range is due to either defects in matrix or electron states at the Si-nc/matrix interface. PMID:23758885

  18. Regimes of leakage current in ALD-processed Al2O3 thin-film layers

    NASA Astrophysics Data System (ADS)

    Spahr, Holger; Reinker, Johannes; Bülow, Tim; Nanova, Diana; Johannes, Hans-Hermann; Kowalsky, Wolfgang

    2013-04-01

    A recently known phenomenon of thin oxide layers with thicknesses below approximately 40 nm is the increase in their breakdown electric field, called disruptive strength, towards lower thicknesses. This offers the possibility of examining the current-electric field characteristics at higher electric field strengths without an early electric breakdown. In this paper, we report on the identification of a current regime of trap-free square law and the buildup of an S-shaped current-electric field characteristic curve. This observation for atomic layer deposition (ALD)-processed Al2O3 layers has not been mentioned in the literature so far. Additionally, a modern model of space charge limited current is used to fit the S-shaped characteristic and extract the associated parameters, such as mobility, density of states, and the energy band gap between the conduction band and the trap state. In this context, the Poole-Frenkel effect is neglected in the model to fit our measurements towards the current increase after the trap filled limit.

  19. Realization of Al2O3/MgO laminated structure at low temperature for thin film encapsulation in organic light-emitting diodes

    NASA Astrophysics Data System (ADS)

    Li, Min; Xu, Miao; Zou, Jianhua; Tao, Hong; Wang, Lei; Zhou, Zhongwei; Peng, Junbiao

    2016-12-01

    A laminated structure of Al2O3 and MgO deposited by atomic layer deposition (ALD) is used to realize a thin film encapsulation technology in organic light-emitting diodes (OLEDs). This film was targeted to achieve an excellent barrier performance. As the thickness of MgO layer increased from 0 nm to 20 nm, its physical properties transformed from the amorphous state into a crystalline state. The optimized cyclic ratio of ALD Al2O3 and MgO exhibited much lower water vapor transmission rate (WVTR) of 4.6 × 10-6 gm-2/day evaluated by Calcium (Ca) corrosion at 60 °C&100% RH, owing to the formation of a terrific laminated structure. Top-emitting OLEDs encapsulated with laminated Al2O3/MgO show longer operating lifetime under rigorous environmental conditions. These improvements were attributed to the embedded MgO film that served as a modified layer to establish a laminated structure to obstruct gas permeation, as well as a scavenger to absorb water molecules, thus alleviating the hydrolysis of bulk Al2O3 material.

  20. Realization of Al2O3/MgO laminated structure at low temperature for thin film encapsulation in organic light-emitting diodes.

    PubMed

    Li, Min; Xu, Miao; Zou, Jianhua; Tao, Hong; Wang, Lei; Zhou, Zhongwei; Peng, Junbiao

    2016-12-09

    A laminated structure of Al2O3 and MgO deposited by atomic layer deposition (ALD) is used to realize a thin film encapsulation technology in organic light-emitting diodes (OLEDs). This film was targeted to achieve an excellent barrier performance. As the thickness of MgO layer increased from 0 nm to 20 nm, its physical properties transformed from the amorphous state into a crystalline state. The optimized cyclic ratio of ALD Al2O3 and MgO exhibited much lower water vapor transmission rate (WVTR) of 4.6 × 10(-6) gm(-2)/day evaluated by Calcium (Ca) corrosion at 60 °C&100% RH, owing to the formation of a terrific laminated structure. Top-emitting OLEDs encapsulated with laminated Al2O3/MgO show longer operating lifetime under rigorous environmental conditions. These improvements were attributed to the embedded MgO film that served as a modified layer to establish a laminated structure to obstruct gas permeation, as well as a scavenger to absorb water molecules, thus alleviating the hydrolysis of bulk Al2O3 material.

  1. Room-Temperature Atomic Layer Deposition of Al2 O3 : Impact on Efficiency, Stability and Surface Properties in Perovskite Solar Cells.

    PubMed

    Kot, Malgorzata; Das, Chittaranjan; Wang, Zhiping; Henkel, Karsten; Rouissi, Zied; Wojciechowski, Konrad; Snaith, Henry J; Schmeisser, Dieter

    2016-12-20

    In this work, solar cells with a freshly made CH3 NH3 PbI3 perovskite film showed a power conversion efficiency (PCE) of 15.4 % whereas the one with 50 days aged perovskite film only 6.1 %. However, when the aged perovskite was covered with a layer of Al2 O3 deposited by atomic layer deposition (ALD) at room temperature (RT), the PCE value was clearly enhanced. X-ray photoelectron spectroscopy study showed that the ALD precursors are chemically active only at the perovskite surface and passivate it. Moreover, the RT-ALD-Al2 O3 -covered perovskite films showed enhanced ambient air stability.

  2. Synthesis and Characterization of Biodegradable Ultrasonicated Films made from Chitosan/al2o3 Polymer Nanocomposites

    NASA Astrophysics Data System (ADS)

    Prakash, B.; Jothirajan, M. A.; Umapathy, S.; Amala, Viji

    Chitosan is a biopolymer which is biodegradable, biocompatible, non toxic and cationic in nature. Due to these interesting properties, it finds advanced applications in sensors, drug delivery vehicle and gene therapy etc., In this present work, the biocompatible Al2O3 Nano particles were embedded into Chitosan Polymer matrix by ultrasonication route. XRD and FTIR studies confirm the presence of Al2O3 nanoparticle in the Chitosan polymer matrix. The morphological, optical, electrical properties of the polymer nano composite films are carried out by employing scanning electron microscopy (SEM), UV- Vis, LCR and Impedance studies.

  3. Al2O3 half-wave films for long-life CW lasers

    NASA Technical Reports Server (NTRS)

    Ladany, I.; Ettenberg, M.; Lockwood, H. F.; Kressel, H.

    1977-01-01

    Long-term operating-life data are reported for (AlGa)As CW laser diodes. The use of half-wave Al2O3 facet coatings is shown to eliminate facet erosion, allowing stable diode operation at constant current for periods in excess of 10,000 h.

  4. Eliminated Phototoxicity of TiO2 Particles by an Atomic-Layer-Deposited Al2 O3 Coating Layer for UV-Protection Applications.

    PubMed

    Jang, Eunyong; Sridharan, Kishore; Park, Young Min; Park, Tae Joo

    2016-08-16

    We demonstrate the conformal coating of an ultrathin Al2 O3 layer on TiO2 nanoparticles through atomic layer deposition by using a specifically designed rotary reactor to eliminate the phototoxicity of the particles for cosmetic use. The ALD reactor is modified to improve the coating efficiency as well as the agitation of the particles for conformal coating. Elemental and microstructural analyses show that ultrathin Al2 O3 layers are conformally deposited on the TiO2 nanoparticles with a controlled thickness. Rhodamine B dye molecules on Al2 O3 -coated TiO2 exhibited a long life time under UV irradiation, that is, more than 2 h, compared to that on bare TiO2 , that is, 8 min, indicating mitigation of photocatalytic activity by the coated layer. The effect of carbon impurities in the film resulting from various deposition temperatures and thicknesses of the Al2 O3 layer on the photocatalytic activity are also thoroughly investigated with controlled experimental condition by using dye molecules on the surface. Our results reveal that an increased carbon impurity resulting from a low processing temperature provides a charge conduction path and generates reactive oxygen species causing the degradation of dye molecule. A thin coated layer, that is, less than 3 nm, also induced the tunneling of electrons and holes to the surface, hence oxidizing dye molecules. Furthermore, the introduction of an Al2 O3 layer on TiO2 improves the light trapping thus, enhances the UV absorption.

  5. Growth and magnetic anisotropy of thin W(110)/Co films on Al2O3(112¯0)

    NASA Astrophysics Data System (ADS)

    Sellmann, R.; Fritzsche, H.; Maletta, H.; Leiner, V.; Siebrecht, R.

    2001-06-01

    The growth and magnetism of thin W(110)/Co films deposited by molecular beam epitaxy on single-crystal sapphire Al2O3(112¯0) substrates is investigated. Low-energy electron diffraction analysis shows that the Co films grow on the epitaxial W(110) substrate layer with a constant lattice strain up to a Co thickness dCo=20 Å. Pseudomorphic growth is found for the W[11¯0] direction. The thickness-dependent magnetic anisotropy is studied in situ at T=300 K by means of magneto-optical Kerr-effect measurements on a Co wedge-shaped sample prior and after coverage with a Au overlayer. After the coverage the Co wedge reveals a perpendicular magnetic anisotropy for small Co film thickness followed by a spin-reorientation transition from out-of-plane to in-plane alignment of the magnetization vector in the thickness regime 7 Å<=dCo<=9 Å. Spin-dependent neutron reflectivity data provide evidence for a pronounced magnetic anisotropy within the film plane even for relatively thick Co films. The observed decrease of the splitting between spin-up and spin-down reflectivities for decreasing temperature indicates that the spin-reorientation transition of the system W(110)/Co/Au can also be induced thermally.

  6. Characterization of Al2O3 optically stimulated luminescence films for 2D dosimetry using a 6 MV photon beam

    NASA Astrophysics Data System (ADS)

    Ahmed, M. F.; Shrestha, N.; Schnell, E.; Ahmad, S.; Akselrod, M. S.; Yukihara, E. G.

    2016-11-01

    This work evaluates the dosimetric properties of newly developed optically stimulated luminescence (OSL) films, fabricated with either Al2O3:C or Al2O3:C,Mg, using a prototype laser scanning reader, a developed image reconstruction algorithm, and a 6 MV therapeutic photon beam. Packages containing OSL films (Al2O3:C and Al2O3:C,Mg) and a radiochromic film (Gafchromic EBT3) were irradiated using a 6 MV photon beam using different doses, field sizes, with and without wedge filter. Dependence on film orientation of the OSL system was also tested. Diode-array (MapCHECK) and ionization chamber measurements were performed for comparison. The OSLD film doses agreed with the MapCHECK and ionization chamber data within the experimental uncertainties (<2% at 1.5 Gy). The system background and minimum detectable dose (MDD) were  <0.5 mGy, and the dose response was approximately linear from the MDD up to a few grays (the linearity correction was  <10% up to ~2-4 Gy), with no saturation up to 30 Gy. The dose profiles agreed with those obtained using EBT3 films (analyzed using the triple channel method) in the high dose regions of the images. In the low dose regions, the dose profiles from the OSLD films were more reproducible than those from the EBT3 films. We also demonstrated that the OSL film data are independent on scan orientation and field size over the investigated range. The results demonstrate the potential of OSLD films for 2D dosimetry, particularly for the characterization of small fields, due to their wide dynamic range, linear response, resolution and dosimetric properties. The negligible background and potential simple calibration make these OSLD films suitable for remote audits. The characterization presented here may motivate further commercial development of a 2D dosimetry system based on the OSL from Al2O3:C or Al2O3:C,Mg.

  7. Electrochemical promotion of propane oxidation on Pt deposited on a dense β″-Al2O3 ceramic Ag+ conductor

    PubMed Central

    Tsampas, Mihalis N.; Kambolis, Anastasios; Obeid, Emil; Lizarraga, Leonardo; Sapountzi, Foteini M.; Vernoux, Philippe

    2013-01-01

    A new kind of electrochemical catalyst based on a Pt porous catalyst film deposited on a β″-Al2O3 ceramic Ag+ conductor was developed and evaluated during propane oxidation. It was observed that, upon anodic polarization, the rate of propane combustion was significantly electropromoted up to 400%. Moreover, for the first time, exponential increase of the catalytic rate was evidenced during galvanostatic transient experiment in excellent agreement with EPOC equation. PMID:24790942

  8. Hydrogen and Carbon Effects on Al2O3 Surface Phases and Metal Deposition

    NASA Astrophysics Data System (ADS)

    Wang, Xiao-Gang; Smith, John

    2005-03-01

    Effects of H and C impurities on α-Al2O3 (0001) surface stability and metal wetting behavior are determined from first principles[1]. The ab initio surface phase diagram for H and C on the alumina surface reveals six distinct surface phases. These different surface phases exhibit a variety of adhesion strengths with Cu and Co, and correspondingly different wetting behaviors. These results are consistent with the varied wetting characteristics observed experimentally. [1] Xiao-Gang Wang and John R. Smith, Phys. Rev. B70, Rapid communications, 081401 (2004).

  9. Fabrication and characterization of Al2O3 /Si composite nanodome structures for high efficiency crystalline Si thin film solar cells

    NASA Astrophysics Data System (ADS)

    Zhang, Ruiying; Zhu, Jian; Zhang, Zhen; Wang, Yanyan; Qiu, Bocang; Liu, Xuehua; Zhang, Jinping; Zhang, Yi; Fang, Qi; Ren, Zhong; Bai, Yu

    2015-12-01

    We report on our fabrication and characterization of Al2O3/Si composite nanodome (CND) structures, which is composed of Si nanodome structures with a conformal cladding Al2O3 layer to evaluate its optical and electrical performance when it is applied to thin film solar cells. It has been observed that by application of Al2O3thin film coating using atomic layer deposition (ALD) to the Si nanodome structures, both optical and electrical performances are greatly improved. The reflectivity of less than 3% over the wavelength range of from 200 nm to 2000 nm at an incident angle from 0° to 45° is achieved when the Al2O3 film is 90 nm thick. The ultimate efficiency of around 27% is obtained on the CND textured 2 μm-thick Si solar cells, which is compared to the efficiency of around 25.75% and 15% for the 2 μm-thick Si nanodome surface-decorated and planar samples respectively. Electrical characterization was made by using CND-decorated MOS devices to measure device's leakage current and capacitance dispersion. It is found the electrical performance is sensitive to the thickness of the Al2O3 film, and the performance is remarkably improved when the dielectric layer thickness is 90 nm thick. The leakage current, which is less than 4x10-9 A/cm2 over voltage range of from -3 V to 3 V, is reduced by several orders of magnitude. C-V measurements also shows as small as 0.3% of variation in the capacitance over the frequency range from 10 kHz to 500 kHz, which is a strong indication of surface states being fully passivated. TEM examination of CND-decorated samples also reveals the occurrence of SiOx layer formed between the interface of Si and the Al2O3 film, which is thin enough that ensures the presence of field-effect passivation, From our theoretical and experimental study, we believe Al2O3 coated CND structures is a truly viable approach to achieving higher device efficiency.

  10. Imaging of oxide charges and contact potential difference fluctuations in atomic layer deposited Al2O3 on Si

    NASA Astrophysics Data System (ADS)

    Sturm, J. M.; Zinine, A. I.; Wormeester, H.; Poelsema, Bene; Bankras, R. G.; Holleman, J.; Schmitz, J.

    2005-03-01

    Ultrathin 2.5nm high-k aluminum oxide (Al2O3) films on p-type silicon (001) deposited by atomic layer deposition (ALD) were investigated with noncontact atomic force microscopy (NC-AFM) in ultrahigh vacuum, using a conductive tip. Constant force gradient images revealed the presence of oxide charges and experimental observations at different tip-sample potentials were compared with calculations of the electric force gradient based on a spherical tip model. This model could be substantially improved by the incorporation of the image of the tip in the semiconductor substrate. Based on the signals of different oxide charges observed, a homogenous depth distribution of those charges was derived. Application of a potential difference between sample and tip was found to result in a net electric force depending on the contact potential difference (CPD) and effective tip-sample capacitance, which depends on the depletion or accumulation layer that is induced by the bias voltage. CPD images could be constructed from height-voltage spectra with active feedback. Apart from oxide charges large-scale (150-300nm lateral size) and small-scale (50-100nm) CPD fluctuations were observed, the latter showing a high degree of correlation with topography features. This correlation might be a result from the surface-inhibited growth mode of the investigated layers.

  11. Effect of adsorbed films on friction of Al2O3-metal systems

    NASA Technical Reports Server (NTRS)

    Pepper, S. V.

    1976-01-01

    The kinetic friction of polycrystalline Al2O3 sliding on Cu, Ni, and Fe in ultrahigh vacuum was studied as a function of the surface chemistry of the metal. Clean metal surfaces were exposed to O2, Cl2, C2H4, and C2H3Cl, and the change in friction due to the adsorbed species was observed. Auger electron spectroscopy assessed the elemental composition of the metal surface. It was found that the systems exposed to Cl2 exhibited low friction, interpreted as the van der Waals force between the Al2O3 and metal chloride. The generation of metal oxide by oxygen exposures resulted in an increase in friction, interpreted as due to strong interfacial bonds established by reaction of metal oxide with Al2O3 to form the complex oxide (spinel). The only effect of C2H4 was to increase the friction of the Fe system, but C2H3Cl exposures decreases friction in both Ni and Fe systems, indicating the dominance of the chlorine over the ethylene complex on the surface

  12. Reduction of Ordering Temperature of FePt Al2O3 Thin Films by N2 Addition During Sputtering

    NASA Astrophysics Data System (ADS)

    Cao, Jiang-Wei; Katayama, N.; Yang, Zheng; Wei, Fu-Lin; Matsumoto, M.; Morisako, A.; Liu, Xiao-Xi; Takei, S.

    2005-11-01

    We investigate the effect of N2 addition during sputtering on the microstructure and magnetic properties of FePt-Al2O3 thin films. The texture of FePt phase in FePt-Al2O3 thin films changes from (111) to a more random orientation by N2 addition during sputtering. The ordering temperature of FePt phase reduces about 100°C with appropriate N2 partial pressure. A larger coercivity of 6.0×105 A/m is obtained with N2 partial pressure about 15%. Structural analysis reveals that a small quantity of Fe3N phase forms during sputtering and the release of N atoms during the post annealing induces a large number of vacancies in the films, which benefits to the transformation of FePt phase from fcc to fct.

  13. Atomic layer deposited Al2O3 passivation of type II InAs/GaSb superlattice photodetectors

    NASA Astrophysics Data System (ADS)

    Salihoglu, Omer; Muti, Abdullah; Kutluer, Kutlu; Tansel, Tunay; Turan, Rasit; Kocabas, Coskun; Aydinli, Atilla

    2012-04-01

    Taking advantage of the favorable Gibbs free energies, atomic layer deposited (ALD) aluminum oxide (Al2O3) was used as a novel approach for passivation of type II InAs/GaSb superlattice (SL) midwave infrared (MWIR) single pixel photodetectors in a self cleaning process (λcut-off ˜ 5.1 μm). Al2O3 passivated and unpassivated diodes were compared for their electrical and optical performances. For passivated diodes, the dark current density was improved by an order of magnitude at 77 K. The zero bias responsivity and detectivity was 1.33 A/W and 1.9 × 1013 Jones, respectively at 4 μm and 77 K. Quantum efficiency (QE) was determined as %41 for these detectors. This conformal passivation technique is promising for focal plane array (FPA) applications.

  14. Integration of crystalline orientated γ-Al2O3 films and complementary metal-oxide-semiconductor circuits on Si(1 0 0) substrate

    NASA Astrophysics Data System (ADS)

    Oishi, Koji; Akai, Daisuke; Ishida, Makoto

    2015-01-01

    In this paper, integration of crystalline orientated γ-Al2O3 films and complementary metal-oxide-semiconductor (CMOS) circuits on Si(1 0 0) substrate was reported. In this integration processes, crystalline γ-Al2O3 films need to be preserved their crystallinity during high temperature annealing processes of CMOS fabrication in order to prevent surface condition changes. The γ-Al2O3 films grown on Si substrates are annealed in the CMOS fabrication process conditions, drive-in annealing at 1150 °C in O2 atmosphere and wet annealing 1000 °C in H2O vapor atmosphere. Reflection high energy electron diffraction (RHEED) and x-ray diffraction (XRD) were used to characterize the crystallinity of γ-Al2O3 films after the annealing processes. Surface conditions of the films are analyzed and observed with X-ray photoelectron spectroscopy (XPS) and scanning electron microscope (SEM). As a result, RHEED patterns of the γ-Al2O3 films indicated that wet oxidation annealing was a critical process severally inferior surface condition of crystalline γ-Al2O3 films. XRD, XPS, and SEM investigation unveiled further details of the crystallinity changes on γ-Al2O3 films for each process. These results indicated passivation films were required to integrate γ-Al2O3 films with CMOS fabrication process. Therefore we proposed and introduced Si3N4/TEOS passivation films on γ-Al2O3 films in CMOS fabrication processes. At last, MOSFETs on γ-Al2O3 integrated Si(1 0 0) substrate were fabricated and characterized. The designed characteristics of MOSFETs were obtained on γ-Al2O3 integrated Si substrate.

  15. Memristive behavior of Al2O3 film with bottom electrode surface modified by Ag nanoparticles

    NASA Astrophysics Data System (ADS)

    Qin, Shu-Chao; Dong, Rui-Xin; Yan, Xun-Ling

    2014-09-01

    The memristive behavior of Al2O3-based device is significantly improved by introducing Ag nanoparticles (NPs). Inserting Ag NPs can effectively reduce the switching voltages, increase the resistance ratio (about 104) and enhance the sweep endurance (300 cycles). In particular, the stable switching properties are obtained by inserting an Ag NPs layer with an average diameter of 14 nm on the surface of bottom electrode, and the devices show a long retention time (more than 106 s) compared with the devices without Ag NPs. The switching mechanism is related to the oxygen-vacancy-based conducting filaments and the interfacial effect. The local enhancement and nonuniform distribution of electric field have the benefits to promote, induce and modulate the growth of conducting filaments, such as shape, location and orientation, which are responsible for the improvement performance of the devices.

  16. Memristive behavior of Al2O3 film with bottom electrode surface modified by Ag nanoparticles

    NASA Astrophysics Data System (ADS)

    Qin, Shu-Chao; Dong, Rui-Xin; Yan, Xun-Ling

    2015-02-01

    The memristive behavior of Al2O3-based device is significantly improved by introducing Ag nanoparticles (NPs). Inserting Ag NPs can effectively reduce the switching voltages, increase the resistance ratio (about 104) and enhance the sweep endurance (300 cycles). In particular, the stable switching properties are obtained by inserting an Ag NPs layer with an average diameter of 14 nm on the surface of bottom electrode, and the devices show a long retention time (more than 106 s) compared with the devices without Ag NPs. The switching mechanism is related to the oxygen-vacancy-based conducting filaments and the interfacial effect. The local enhancement and nonuniform distribution of electric field have the benefits to promote, induce and modulate the growth of conducting filaments, such as shape, location and orientation, which are responsible for the improvement performance of the devices.

  17. Atomic-layer-deposited Al2O3 and HfO2 on InAlAs: A comparative study of interfacial and electrical characteristics

    NASA Astrophysics Data System (ADS)

    Wu, Li-Fan; Zhang, Yu-Ming; Lv, Hong-Liang; Zhang, Yi-Men

    2016-10-01

    Al2O3 and HfO2 thin films are separately deposited on n-type InAlAs epitaxial layers by using atomic layer deposition (ALD). The interfacial properties are revealed by angle-resolved x-ray photoelectron spectroscopy (AR-XPS). It is demonstrated that the Al2O3 layer can reduce interfacial oxidation and trap charge formation. The gate leakage current densities are 1.37 × 10-6 A/cm2 and 3.22 × 10-6 A/cm2 at +1 V for the Al2O3/InAlAs and HfO2/InAlAs MOS capacitors respectively. Compared with the HfO2/InAlAs metal-oxide-semiconductor (MOS) capacitor, the Al2O3/InAlAs MOS capacitor exhibits good electrical properties in reducing gate leakage current, narrowing down the hysteresis loop, shrinking stretch-out of the C-V characteristics, and significantly reducing the oxide trapped charge (Q ot) value and the interface state density (D it). Project supported by the National Basic Research Program of China (Grant No. 2010CB327505), the Advanced Research Foundation of China (Grant No. 914xxx803-051xxx111), the National Defense Advance Research Project, China (Grant No. 513xxxxx306), the National Natural Science Foundation of China (Grant No. 51302215), the Scientific Research Program Funded by Shaanxi Provincial Education Department, China (Grant No. 14JK1656), and the Science and Technology Project of Shaanxi Province, China (Grant No. 2016KRM029).

  18. Gamma and proton irradiation effects and thermal stability of electrical characteristics of metal-oxide-silicon capacitors with atomic layer deposited Al2O3 dielectric

    DOE PAGES

    J. M. Rafi; Lynn, D.; Pellegrini, G.; ...

    2015-12-11

    The radiation hardness and thermal stability of the electrical characteristics of atomic layer deposited Al2O3 layers to be used as passivation films for silicon radiation detectors with slim edges are investigated. To directly measure the interface charge and to evaluate its change with the ionizing dose, metal-oxide-silicon (MOS) capacitors implementing differently processed Al2O3 layers were fabricated on p-type silicon substrates. Qualitatively similar results are obtained for degradation of capacitance–voltage and current–voltage characteristics under gamma and proton irradiations up to equivalent doses of 30 Mrad and 21.07 Mrad, respectively. While similar negative charge densities are initially extracted for all non-irradiated capacitors,more » superior radiation hardness is obtained for MOS structures with alumina layers grown with H2O instead of O3 as oxidant precursor. Competing effects between radiation-induced positive charge trapping and hydrogen release from the H2O-grown Al2O3 layers may explain their higher radiation resistance. Finally, irradiated and non-irradiated MOS capacitors with differently processed Al2O3 layers have been subjected to thermal treatments in air at temperatures ranging between 100 °C and 200 °C and the thermal stability of their electrical characteristics has been evaluated. Partial recovery of the gamma-induced degradation has been noticed for O3-grown MOS structures. Lastly, this can be explained by a trapped holes emission process, for which an activation energy of 1.38 ± 0.15 eV has been extracted.« less

  19. Gamma and proton irradiation effects and thermal stability of electrical characteristics of metal-oxide-silicon capacitors with atomic layer deposited Al2O3 dielectric

    NASA Astrophysics Data System (ADS)

    Rafí, J. M.; Pellegrini, G.; Fadeyev, V.; Galloway, Z.; Sadrozinski, H. F.-W.; Christophersen, M.; Phlips, B. F.; Lynn, D.; Kierstead, J.; Hoeferkamp, M.; Gorelov, I.; Palni, P.; Wang, R.; Seidel, S.

    2016-02-01

    The radiation hardness and thermal stability of the electrical characteristics of atomic layer deposited Al2O3 layers to be used as passivation films for silicon radiation detectors with slim edges are investigated. To directly measure the interface charge and to evaluate its change with the ionizing dose, metal-oxide-silicon (MOS) capacitors implementing differently processed Al2O3 layers were fabricated on p-type silicon substrates. Qualitatively similar results are obtained for degradation of capacitance-voltage and current-voltage characteristics under gamma and proton irradiations up to equivalent doses of 30 Mrad and 21.07 Mrad, respectively. While similar negative charge densities are initially extracted for all non-irradiated capacitors, superior radiation hardness is obtained for MOS structures with alumina layers grown with H2O instead of O3 as oxidant precursor. Competing effects between radiation-induced positive charge trapping and hydrogen release from the H2O-grown Al2O3 layers may explain their higher radiation resistance. Finally, irradiated and non-irradiated MOS capacitors with differently processed Al2O3 layers have been subjected to thermal treatments in air at temperatures ranging between 100 °C and 200 °C and the thermal stability of their electrical characteristics has been evaluated. Partial recovery of the gamma-induced degradation has been noticed for O3-grown MOS structures. This can be explained by a trapped holes emission process, for which an activation energy of 1.38 ± 0.15 eV has been extracted.

  20. Synthesis of anodizing composite films containing superfine Al 2O 3 and PTFE particles on Al alloys

    NASA Astrophysics Data System (ADS)

    Chen, Suiyuan; Kang, Chen; Wang, Jing; Liu, Changsheng; Sun, Kai

    2010-09-01

    Anodized composite films containing superfine Al 2O 3 and PTFE particles were prepared on 2024 Al alloy using an anodizing method. The microstructures and properties of the films were studied by scanning electron microscopy, optical microscopy and X-ray diffraction. Friction wear tests were performed to evaluate the mechanical properties of the composites. Results indicate that the composite films with reinforced Al 2O 3 and PTFE two-particles have reduced friction coefficients and relatively high microhardness. The friction coefficient can be as small as 0.15, which is much smaller than that of an oxide film prepared under the same conditions but without adding any particles (0.25), while the microhardness can reach as high as 404 HV. When rubbed at room temperature for 20 min during dry sliding friction tests, the wear loss of the film was about 16 mg, which is about the half of that of the samples without added particles. The synthesized composite films that have good anti-wear and self-lubricating properties are desirable for oil-free industrial machinery applications.

  1. Annealing study of H2O and O3 grown Al2O3 deposited by atomic layer chemical vapour deposition on n-type 4H-SiC

    NASA Astrophysics Data System (ADS)

    Avice, Marc; Grossner, Ulrike; Nilsen, Ola; Christensen, Jens S.; Fjellvåg, Helmer; Svensson, Bengt G.

    2006-09-01

    Al2O3 has been grown by atomic layer chemical vapour deposition on HF cleaned n-type 4H-SiC using either H2O or O3 as an oxidant. After post-deposition annealing at high temperature (1000°C) in argon atmosphere for different durations (1, 2 and 3 h), bulk and interface properties of the films were studied by capacitance-voltage (CV), current-voltage (IV) and secondary ion mass spectrometry (SIMS) measurements. Electrical measurements show a decreasing shift of the flatband voltage indicating a diminution of the negative oxide charges with increasing annealing time. The SIMS measurements reveal accumulation of boron, sodium and potassium at the Al2O3/SiC interface but the accumulation decreases with annealing at 1000°C where also out diffusion of silicon into the Al2O3 film takes place.

  2. Preparation and characterization of Co epitaxial thin films on Al2O3(0001) single-crystal substrates

    NASA Astrophysics Data System (ADS)

    Yabuhara, Osamu; Ohtake, Mitsuru; Nukaga, Yuri; Futamoto, Masaaki

    2011-01-01

    Co epitaxial thin films were prepared on Al2O3(0001) single-crystal substrates in a substrate temperature range between 50 and 500 °C by ultra high vacuum molecular beam epitaxy. Effects of substrate temperature on the structure and the magnetic properties of the films were investigated. The films grown at temperatures lower than 150 °C consist of fcc- Co(111) crystal. With increasing the substrate temperature, hcp-Co(0001) crystal coexists with the fcc crystal and the volume ratio of hcp to fcc crystal increases. The films prepared at temperatures higher than 250 °C consist primarily of hcp crystal. The film growth seems to follow island-growth mode. The films consisting primarily of hcp crystal show perpendicular magnetic anisotropy. The domain structure and the magnetization properties are influenced by the magnetocrystalline anisotropy and the shape anisotropy caused by the film surface roughness.

  3. Corrosion Protection of Copper Using Al2O3, TiO2, ZnO, HfO2, and ZrO2 Atomic Layer Deposition.

    PubMed

    Daubert, James S; Hill, Grant T; Gotsch, Hannah N; Gremaud, Antoine P; Ovental, Jennifer S; Williams, Philip S; Oldham, Christopher J; Parsons, Gregory N

    2017-02-01

    Atomic layer deposition (ALD) is a viable means to add corrosion protection to copper metal. Ultrathin films of Al2O3, TiO2, ZnO, HfO2, and ZrO2 were deposited on copper metal using ALD, and their corrosion protection properties were measured using electrochemical impedance spectroscopy (EIS) and linear sweep voltammetry (LSV). Analysis of ∼50 nm thick films of each metal oxide demonstrated low electrochemical porosity and provided enhanced corrosion protection from aqueous NaCl solution. The surface pretreatment and roughness was found to affect the extent of the corrosion protection. Films of Al2O3 or HfO2 provided the highest level of initial corrosion protection, but films of HfO2 exhibited the best coating quality after extended exposure. This is the first reported instance of using ultrathin films of HfO2 or ZrO2 produced with ALD for corrosion protection, and both are promising materials for corrosion protection.

  4. Preparation of ZnO/Al2O3 catalysts by using atomic layer deposition for plasma-assisted non-oxidative methane coupling

    NASA Astrophysics Data System (ADS)

    Jeong, Myung-Geun; Kim, Young Dok; Park, Sunyoung; Kasinathan, Palraj; Hwang, Young Kyu; Chang, Jong-San; Park, Yong-Ki

    2016-05-01

    We prepared a ZnO/mesoporous Al2O3-shell/core structure by using atomic layer deposition (ALD) of ZnO on commercially-available mesoporous Al2O3. We used various analysis techniques such as scanning and transmission electron microscopy, X-ray photoelectron spectroscopy, inductively coupled plasma-atomic emission spectroscopy, and surface area and pore size analyses based on nitrogen isotherm data. A 200 nm-thick slab of mesoporous Al2O3 particles was decorated by ZnO upon ALD deposition, whereas the inner part of the Al2O3 particle was free of ZnO. We evaluated the catalytic activity of the bare and the ZnO-covered Al2O3 for plasma-assisted nonoxidative coupling of methane. The catalytic behavior was shown to be sensitive to the amount of ZnO deposited. Particularly, 40-cycled ZnO/Al2O3 showed an enhanced selectivity to the olefin product with almost the same CH4 conversion as that of bare Al2O3. Preparation of the shell/core structure by using ALD can be an interesting strategy for finding highly-efficient catalysts in a plasma-assisted catalytic reaction.

  5. High-temperature degradation in plasma-enhanced chemical vapor deposition Al2O3 surface passivation layers on crystalline silicon

    NASA Astrophysics Data System (ADS)

    Kühnhold, Saskia; Saint-Cast, Pierre; Kafle, Bishal; Hofmann, Marc; Colonna, Francesco; Zacharias, Margit

    2014-08-01

    In this publication, the activation and degradation of the passivation quality of plasma-enhanced chemical vapor deposited aluminum oxide (Al2O3) layers with different thicknesses (10 nm, 20 nm, and 110 nm) on crystalline silicon (c-Si) during long and high temperature treatments are investigated. As indicated by Fourier Transform Infrared Spectroscopy, the concentration of tetrahedral and octahedral sites within the Al2O3 layer changes during temperature treatments and correlates with the amount of negative fixed charges at the Si/Al2O3 interface, which was detected by Corona Oxide Characterization of Semiconductors. Furthermore, during a temperature treatment at 820 °C for 30 min, the initial amorphous Al2O3 layer crystallize into the γ-Al2O3 structure and was enhanced by additional oxygen as was proven by x-ray diffraction measurements and underlined by Density Functional Theory simulations. The crystallization correlates with the increase of the optical density up to 20% while the final Al2O3 layer thickness decreases at the same time up to 26%. All observations described above were detected to be Al2O3 layer thickness dependent. These observations reveal novel aspects to explain the temperature induced passivation and degradation mechanisms of Al2O3 layers at a molecular level like the origin of the negative fixe charges at the Si/SiOx/Al2O3 interface or the phenomena of blistering. Moreover, the crystal phase of Al2O3 does not deliver good surface passivation due to a high concentration of octahedral sites leading to a lower concentration of negative fixed charges at the interface.

  6. Residual Strain and Fracture Response of Al2O3 Coatings Deposited via APS and HVOF Techniques

    NASA Astrophysics Data System (ADS)

    Ahmed, R.; Faisal, N. H.; Paradowska, A. M.; Fitzpatrick, M. E.

    2012-01-01

    The aim of this investigation was to nondestructively evaluate the residual stress profile in two commercially available alumina/substrate coating systems and relate residual stress changes with the fracture response. Neutron diffraction, due to its high penetration depth, was used to measure residual strain in conventional air plasma-sprayed (APS) and finer powder high velocity oxy-fuel (HVOF (θ-gun))-sprayed Al2O3 coating/substrate systems. The purpose of this comparison was to ascertain if finer powder Al2O3 coatings deposited via θ-gun can provide improved residual stress and fracture response in comparison to conventional APS coatings. To obtain a through thickness residual strain profile with high resolution, a partially submerged beam was used for measurements near the coating surface, and a beam submerged in the coating and substrate materials near the coating-substrate interface. By using the fast vertical scanning method, with careful leveling of the specimen using theodolites, the coating surface and the coating/substrate interface were located with an accuracy of about 50 μm. The results show that the through thickness residual strain in the APS coating was mainly tensile, whereas the HVOF coating had both compressive and tensile residual strains. Further analysis interlinking Vickers indentation fracture behavior using acoustic emission (AE) was conducted. The microstructural differences along with the nature and magnitude of the residual strain fields had a direct effect on the fracture response of the two coatings during the indentation process.

  7. Spectral density analysis of the optical properties of Ni-Al2O3 nano-composite films

    NASA Astrophysics Data System (ADS)

    Niklasson, Gunnar A.; Boström, Tobias K.; Tuncer, Enis

    2011-09-01

    Thin films consisting of transition metal nanoparticles in an insulating oxide exhibit a high solar absorptance together with a low thermal emittance and are used as coatings on solar collector panels. In order to optimise the nanocomposites for this application a more detailed understanding of their optical properties is needed. Here we use a highly efficient recently developed numerical method to extract the spectral density function of nickel-aluminum oxide (Ni-Al2O3) composites from experimental data on the dielectric permittivity in the visible and near-infrared wavelength ranges. Thin layers of Ni-Al2O3 were produced by a sol-gel technique. Reflectance and transmittance spectra were measured by spectrophotometry in the wavelength range 300 to 2500 nm for films with thicknesses in the range 50 to 100 nm. Transmission electron microscopy showed crystalline Ni particles with sizes in the 3 to 10 nm range. The spectral density function shows a multi-peak structure with three or four peaks clearly visible. The peak positions are influenced by particle shape, local volume fraction distributions and particle-particle interactions giving rise to structural resonances in the response of the composite to an electromagnetic field.

  8. Slow charge recombination in dye-sensitised solar cells (DSSC) using Al2O3 coated nanoporous TiO2 films.

    PubMed

    Palomares, Emilio; Clifford, John N; Haque, Saif A; Lutz, Thierry; Durrant, James R

    2002-07-21

    The conformal growth of an overlayer of Al2O3 on a nanocrystalline TiO2 film is shown to result in a 4-fold retardation of interfacial charge recombination, and a 30% improvement in photovoltaic device efficiency.

  9. Epitaxial growth and electric properties of γ-Al2O3(110) films on β-Ga2O3(010) substrates

    NASA Astrophysics Data System (ADS)

    Hattori, Mai; Oshima, Takayoshi; Wakabayashi, Ryo; Yoshimatsu, Kohei; Sasaki, Kohei; Masui, Takekazu; Kuramata, Akito; Yamakoshi, Shigenobu; Horiba, Koji; Kumigashira, Hiroshi; Ohtomo, Akira

    2016-12-01

    Epitaxial growth and electrical properties of γ-Al2O3 films on β-Ga2O3(010) substrates were investigated regarding the prospect of a gate oxide in a β-Ga2O3-based MOSFET. The γ-Al2O3 films grew along the [110] direction and inherited the oxygen sublattice from β-Ga2O3 resulting in the unique in-plane epitaxial relationship of γ-Al2O3 [\\bar{1}10] ∥ β-Ga2O3[001]. We found that the γ-Al2O3 layer had a band gap of 7.0 eV and a type-I band alignment with β-Ga2O3 with conduction- and valence-band offsets of 1.9 and 0.5 eV, respectively. A relatively high trap density (≅ 2 × 1012 cm-2 eV-1) was found from the voltage shift of photoassisted capacitance-voltage curves measured for a Au/γ-Al2O3/β-Ga2O3 MOS capacitor. These results indicate good structural and electric properties and some limitations hindering the better understanding of the role of the gate dielectrics (a γ-Al2O3 interface layer naturally crystallized from amorphous Al2O3) in the β-Ga2O3 MOSFET.

  10. Magnetic properties and anisotropic coercivity in nanogranular films of Co/Al2O3 above the percolation limit

    NASA Astrophysics Data System (ADS)

    Kulyk, M. M.; Kalita, V. M.; Lozenko, A. F.; Ryabchenko, S. M.; Stognei, O. V.; Sitnikov, A. V.; Korenivski, V.

    2014-08-01

    Magnetic properties of nanogranular ferromagnetic Co/Al2O3 films with 74.5 at% Co, which is above the percolation limit, are investigated. It is established that the films have perpendicular magnetic anisotropy and a weaker in-plane anisotropy. The magnetization curves show that the film consists of two magnetic components: a dominating contribution from magneto-anisotropic isolated grains with the anisotropy axis perpendicular to the film plane and a weaker contribution from the percolated part of the film. This two-component magnetic composition of the films, with the dominating contribution from the nanograins, is confirmed by transmission electron microscopy as well as by ferromagnetic resonance spectroscopy. It is further established that the coercive field of the film is almost entirely determined by the percolated part of the film. In this, the angular dependence of the coercive force, Hc (θH), is essentially proportional to sin-1θH, where θH is the angle between the applied field and the film's normal. However, for θH → 0, Hc (θH) there is a narrow minimum with Hc approaching zero. Such non-linear dependence agrees well with our modelling results for a two-component magnetic system of the film, where the non-percolated nanograins have a distinct perpendicular anisotropy. The reported results should be important for in-depth characterization and understanding the magnetism and anisotropy in inhomogeneous systems as well as for applications, specifically in perpendicular magnetic recording.

  11. Reduction of native oxides on InAs by atomic layer deposited Al2O3 and HfO2

    NASA Astrophysics Data System (ADS)

    Timm, R.; Fian, A.; Hjort, M.; Thelander, C.; Lind, E.; Andersen, J. N.; Wernersson, L.-E.; Mikkelsen, A.

    2010-09-01

    Thin high-κ oxide films on InAs, formed by atomic layer deposition, are the key to achieve high-speed metal-oxide-semiconductor devices. We have studied the native oxide and the interface between InAs and 2 nm thick Al2O3 or HfO2 layers using synchrotron x-ray photoemission spectroscopy. Both films lead to a strong oxide reduction, obtaining less than 10% of the native As-oxides and between 10% and 50% of the native In-oxides, depending on the deposition temperature. The ratio of native In- to As-oxides is determined to be 2:1. The exact composition and the influence of different oxidation states and suboxides is discussed in detail.

  12. S passivation of GaAs and band bending reduction upon atomic layer deposition of HfO2/Al2O3 nanolaminates

    NASA Astrophysics Data System (ADS)

    Aguirre-Tostado, F. S.; Milojevic, M.; Choi, K. J.; Kim, H. C.; Hinkle, C. L.; Vogel, E. M.; Kim, J.; Yang, T.; Xuan, Y.; Ye, P. D.; Wallace, R. M.

    2008-08-01

    A systematic study of the interface engineering and dielectric properties of nanolaminated hafnium aluminate on GaAs is presented. The dielectrics were deposited using atomic layer deposition of alternating cycles of HfO2 and Al2O3 on GaAs substrates. High resolution x-ray photoelectron spectroscopy (XPS) showed differences in space charge amounts at the interface for the two surface treatments [NH4OH or (NH4)2S]. In-situ XPS analysis shows that chemical bonding to oxygen across the nanolaminate film is independent of the interface formation conditions. In addition, the GaAs surface treated with (NH4)2S shows a decreased band bending and slightly thinner films with respect to NH4OH.

  13. Comparative Study of Al2O3 Optical Crystalline Thin Films Grown by Vapor Combinations of Al(CH3)3/N2O and Al(CH3)3/H2O2

    NASA Astrophysics Data System (ADS)

    Kumagai, Hiroshi; Toyoda, Koichi; Matsumoto, Masahiko; Obara, Minoru

    1993-12-01

    We compared the use of nitrous oxide (N2O) and hydrogen peroxide (H2O2) as the oxidant in digital chemical vapor deposition to obtain high-quality optical crystalline thin films of Al2O3. Optical constants and thicknesses of these films were investigated in terms of growth temperature, by using variable-angle spectroscopic ellipsometry.

  14. Photo-stability and time-resolved photoluminescence study of colloidal CdSe/ZnS quantum dots passivated in Al2O3 using atomic layer deposition

    NASA Astrophysics Data System (ADS)

    Cheng, Chih-Yi; Mao, Ming-Hua

    2016-08-01

    We report photo-stability enhancement of colloidal CdSe/ZnS quantum dots (QDs) passivated in Al2O3 thin film using the atomic layer deposition (ALD) technique. 62% of the original peak photoluminescence (PL) intensity remained after ALD. The photo-oxidation and photo-induced fluorescence enhancement effects of both the unpassivated and passivated QDs were studied under various conditions, including different excitation sources, power densities, and environment. The unpassivated QDs showed rapid PL degradation under high excitation due to strong photo-oxidation in air while the PL intensity of Al2O3 passivated QDs was found to remain stable. Furthermore, recombination dynamics of the unpassivated and passivated QDs were investigated by time-resolved measurements. The average lifetime of the unpassivated QDs decreases with laser irradiation time due to photo-oxidation. Photo-oxidation creates surface defects which reduces the QD emission intensity and enhances the non-radiative recombination rate. From the comparison of PL decay profiles of the unpassivated and passivated QDs, photo-oxidation-induced surface defects unexpectedly also reduce the radiative recombination rate. The ALD passivation of Al2O3 protects QDs from photo-oxidation and therefore avoids the reduction of radiative recombination rate. Our experimental results demonstrated that passivation of colloidal QDs by ALD is a promising method to well encapsulate QDs to prevent gas permeation and to enhance photo-stability, including the PL intensity and carrier lifetime in air. This is essential for the applications of colloidal QDs in light-emitting devices.

  15. Effects of annealing conditions on the dielectric properties of solution-processed Al2O3 layers for indium-zinc-tin-oxide thin-film transistors.

    PubMed

    Kim, Yong-Hoon; Kim, Kwang-Ho; Park, Sung Kyu

    2013-11-01

    In this paper, the effects of annealing conditions on the dielectric properties of solution-processed aluminum oxide (Al2O3) layers for indium-zinc-tin-oxide (IZTO) thin-film transistors (TFTs) have been investigated. The dielectric properties of Al2O3 layers such as leakage current density and dielectric strength were largely affected by their annealing conditions. In particular, oxygen partial pressure in rapid thermal annealing, and the temperature profile of hot plate annealing had profound effects on the dielectric properties. From a refractive index analysis, the enhanced dielectric properties of Al2O3 gate dielectrics can be attributed to higher film density depending on the annealing conditions. With the low-temperature-annealed Al2O3 gate dielectric at 350 degrees C, solution-processed IZTO TFTs with a field-effect mobility of approximately 2.2 cm2/Vs were successfully fabricated.

  16. Control of phonon transport by the formation of the Al2O3 interlayer in Al2O3-ZnO superlattice thin films and their in-plane thermoelectric energy generator performance.

    PubMed

    Park, No-Won; Ahn, Jay-Young; Park, Tae-Hyun; Lee, Jung-Hun; Lee, Won-Yong; Cho, Kwanghee; Yoon, Young-Gui; Choi, Chel-Jong; Park, Jin-Seong; Lee, Sang-Kwon

    2017-04-03

    Recently, significant progress has been made in increasing the figure-of-merit (ZT) of various nanostructured materials, including thin-film and quantum dot superlattice structures. Studies have focused on the size reduction and control of the surface or interface of nanostructured materials since these approaches enhance the thermopower and phonon scattering in quantum and superlattice structures. Currently, bismuth-tellurium-based semiconductor materials are widely employed for thermoelectric (TE) devices such as TE energy generators and coolers, in addition to other sensors, for use at temperatures under 400 K. However, new and promising TE materials with enhanced TE performance, including doped zinc oxide (ZnO) multilayer or superlattice thin films, are also required for designing solid-state TE power generating devices with the maximum output power density and for investigating the physics of in-plane TE generators. Herein, we report the growth of Al2O3/ZnO (AO/ZnO) superlattice thin films, which were prepared by atomic layer deposition (ALD), and the evaluation of their electrical and TE properties. All the in-plane TE properties, including the Seebeck coefficient (S), electrical conductivity (σ), and thermal conductivity (κ), of the AO/ZnO superlattice (with a 0.82 nm-thick AO layer) and AO/ZnO films (with a 0.13 nm-thick AO layer) were evaluated in the temperature range 40-300 K, and the measured S, σ, and κ were -62.4 and -17.5 μV K(-1), 113 and 847 (Ω cm)(-1), and 0.96 and 1.04 W m(-1) K(-1), respectively, at 300 K. Consequently, the in-plane TE ZT factor of AO/ZnO superlattice films was found to be ∼0.014, which is approximately two times more than that of AO/ZnO films (ZT of ∼0.007) at 300 K. Furthermore, the electrical power generation efficiency of the TE energy generator consisting of four couples of n-AO/ZnO superlattice films and p-Bi0.5Sb1.5Te3 (p-BST) thin-film legs on the substrate was demonstrated. Surprisingly, the output power of

  17. The adsorption of water on Cu2O and Al2O3 thin films

    SciTech Connect

    Deng, Xingyi; Herranz, Tirma; Weis, Christoph; Bluhm, Hendrik; Salmeron, Miquel

    2008-06-27

    The initial stages of water condensation, approximately 6 molecular layers, on two oxide surfaces, Cu{sub 2}O and Al{sub 2}O{sub 3}, have been investigated by using ambient pressure X-ray photoelectron spectroscopy at relative humidity values (RH) from 0 to >90%. Water adsorbs first dissociatively on oxygen vacancies producing adsorbed hydroxyl groups in a stoichiometric reaction: O{sub lattic} + vacancies + H{sub 2}O = 2OH. The reaction is completed at {approx}1% RH and is followed by adsorption of molecular water. The thickness of the water film grows with increasing RH. The first monolayer is completed at {approx}15% RH on both oxides and is followed by a second layer at 35-40% RH. At 90% RH, about 6 layers of H{sub 2}O film have been formed on Al{sub 2}O{sub 3}.

  18. Laser induced damage threshold and optical properties of TiO2 and Al2O3 coatings prepared by atomic layer deposition

    NASA Astrophysics Data System (ADS)

    Jensen, Lars O.; Mädebach, Heinrich; Maula, Jarmo; Gürtler, Karlheinz; Ristau, Detlev

    2012-11-01

    Atomic Layer Deposition (ALD) allows for the deposition of homogeneous and conformal coatings with superior microstructural properties and well controllable thickness. As a consequence, ALD-processes have moved into the focus of optical thin film research during the last decade. In contrast to this, only a relatively small number of investigations in the power handling capability of ALD-coatings have been reported until now. The present contribution summarizes results of a study dedicated to the optical properties of single layers and high reflecting coating systems of TiO2 and Al2O3 deposited by ALD. Besides Laser Induced Damage Threshold (LIDT) values, the spectral characteristics as well the absorption and scatter losses are discussed.

  19. Competition between Al2O3 atomic layer etching and AlF3 atomic layer deposition using sequential exposures of trimethylaluminum and hydrogen fluoride.

    PubMed

    DuMont, Jaime W; George, Steven M

    2017-02-07

    The thermal atomic layer etching (ALE) of Al2O3 can be performed using sequential and self-limiting reactions with trimethylaluminum (TMA) and hydrogen fluoride (HF) as the reactants. The atomic layer deposition (ALD) of AlF3 can also be accomplished using the same reactants. This paper examined the competition between Al2O3 ALE and AlF3 ALD using in situ Fourier transform infrared (FTIR) vibrational spectroscopy measurements on Al2O3 ALD-coated SiO2 nanoparticles. The FTIR spectra could observe an absorbance loss of the Al-O stretching vibrations during Al2O3 ALE or an absorbance gain of the Al-F stretching vibrations during AlF3 ALD. The transition from AlF3 ALD to Al2O3 ALE occurred versus reaction temperature and was also influenced by the N2 or He background gas pressure. Higher temperatures and lower background gas pressures led to Al2O3 ALE. Lower temperatures and higher background gas pressures led to AlF3 ALD. The FTIR measurements also monitored AlCH3* and HF(*) species on the surface after the TMA and HF reactant exposures. The loss of AlCH3* and HF(*) species at higher temperatures is believed to play a vital role in the transition between AlF3 ALD at lower temperatures and Al2O3 ALE at higher temperatures. The change between AlF3 ALD and Al2O3 ALE was defined by the transition temperature. Higher transition temperatures were observed using larger N2 or He background gas pressures. This correlation was associated with variations in the N2 or He gas thermal conductivity versus pressure. The fluorination reaction during Al2O3 ALE is very exothermic and leads to temperature rises in the SiO2 nanoparticles. These temperature transients influence the Al2O3 etching. The higher N2 and He gas thermal conductivities are able to cool the SiO2 nanoparticles more efficiently and minimize the size of the temperature rises. The competition between Al2O3 ALE and AlF3 ALD using TMA and HF illustrates the interplay between etching and growth and the importance of

  20. Performance and retention characteristics of nanocrystalline Si floating gate memory with an Al2O3 tunnel layer fabricated by plasma-enhanced atomic layer deposition

    NASA Astrophysics Data System (ADS)

    Ma, Zhongyuan; Wang, Wen; Yang, Huafeng; Jiang, Xiaofan; Yu, Jie; Qin, Hua; Xu, Ling; Chen, Kunji; Huang, Xinfan; Li, Wei; Xu, Jun; Feng, Duan

    2016-02-01

    The down-scaling of nanocrystal Si (nc-Si) floating gate memory must overcome the challenge of leakage current induced by the conventional ultra-thin tunnel layer. We demonstrate that an improved memory performance based on the Al/SiNx/nc-Si/Al2O3/Si structure can be achieved by adopting the Al2O3 tunnel layer fabricated by plasma-enhanced atomic layer deposition. A larger memory window of 7.9 V and better retention characteristics of 4.7 V after 105 s can be obtained compared with the devices containing a conventional SiO2 tunnel layer of equivalent thickness. The capacitance-voltage characteristic reveals that the Al2O3 tunnel layer has a smaller electron barrier height, which ensures that more electrons are injected into the nc-Si dots through the Al2O3/Si interface. The analysis of the conductance-voltage and high-resolution cross-section transmission microscopy reveals that the smaller nc-Si dots dominate in the charge injection in the nc-Si floating gate MOS device with an Al2O3 tunnel layer. With an increase of the nc-Si size, both nc-Si and the interface contribute to the charge storage capacity and retention. The introduction of the Al2O3 tunnel layer in nc-Si floating gate memory provides a method to achieve an improved performance of nc-Si floating gate memory.

  1. TEM study of defect structure of GaN epitaxial films grown on GaN/Al2O3 substrates with buried column pattern

    NASA Astrophysics Data System (ADS)

    Mynbaeva, M. G.; Kremleva, A. V.; Kirilenko, D. A.; Sitnikova, A. A.; Pechnikov, A. I.; Mynbaev, K. D.; Nikolaev, V. I.; Bougrov, V. E.; Lipsanen, H.; Romanov, A. E.

    2016-07-01

    A TEM study of defect structure of GaN films grown by chloride vapor-phase epitaxy (HVPE) on GaN/Al2O3 substrates was performed. The substrates were fabricated by metal-organic chemical vapor deposition overgrowth of templates with buried column pattern. The results of TEM study showed that the character of the defect structure of HVPE-grown films was determined by the configuration of the column pattern in the substrate. By choosing the proper pattern, the reduction in the density of threading dislocations in the films by two orders of magnitude (in respect to the substrate material), down to the value of 107 cm-2, was achieved.

  2. Magnetic and structural properties of Fe87Pt13-Al2O3 composite thin films synthesized by solid-state reactions

    NASA Astrophysics Data System (ADS)

    Zhigalov, V. S.; Myagkov, V. G.; Bykova, L. E.; Bondarenko, G. N.; Matsynin, A. A.; Volochaev, M. N.

    2017-02-01

    The structural and magnetic properties of Fe87Pt13 films synthesized by solid-state reactions and Fe87Pt13-Al2O3 composite films fabricated by aluminothermy are investigated. It is shown that the synthesized samples of both types are characterized by the rotational magnetic anisotropy, when the easy magnetization axis in the film plane can be set by a magnetic field. It is established that the value of rotational magnetic anisotropy in the Fe87Pt13-Al2O3 composite films is higher than in the Fe87Pt13 samples by an order of magnitude. The rotational magnetic anisotropy is assumed to be caused by the exchange coupling of the L10-FePt phase with the L12-Fe3Pt phase in the Fe87Pt13 films and magnetic iron oxides in the Fe87Pt13-Al2O3 samples.

  3. Reduction and desorption of native oxides on GaAs and Ge during atomic layer deposition of Al2O3

    NASA Astrophysics Data System (ADS)

    Lee, Hang Dong; Feng, Tian; Yu, Lei; Mastrogiovanni, Daniel; Wan, Alan; Gustafsson, Torgny; Garfunkel, Eric

    2010-03-01

    The reduction of native oxides and control of interfacial defects is of central importance if materials such as GaAs and Ge are to be used for post-Si CMOS. We and others have earlier observed that under certain conditions such oxides are removed during atomic layer deposition (ALD) growth. We find, using medium energy ion scattering spectroscopy (MEIS) and XPS, that after just a single ALD half cycle (exposure to a trimethylaluminum (TMA) precursor) ˜65% of the native oxide is removed and a 5 å oxygen-rich aluminum oxide is formed. The source for the oxygen in the aluminum oxide is therefore the native oxide. For Ge substrates, one single TMA pulse removes a substantial amount of the native oxides and a 3å Al2O3 film is grown. The native oxides are also completely removed after > 450 C preheating of the substrate. The mechanisms for these processes will be discussed.

  4. Silicon solar cells with Al2O3 antireflection coating

    NASA Astrophysics Data System (ADS)

    Dobrzański, Leszek; Szindler, Marek; Drygała, Aleksandra; Szindler, Magdalena

    2014-09-01

    The paper presents the possibility of using Al2O3 antireflection coatings deposited by atomic layer deposition ALD. The ALD method is based on alternate pulsing of the precursor gases and vapors onto the substrate surface and then chemisorption or surface reaction of the precursors. The reactor is purged with an inert gas between the precursor pulses. The Al2O3 thin film in structure of the finished solar cells can play the role of both antireflection and passivation layer which will simplify the process. For this research 50×50 mm monocrystalline silicon solar cells with one bus bar have been used. The metallic contacts were prepared by screen printing method and Al2O3 antireflection coating by ALD method. Results and their analysis allow to conclude that the Al2O3 antireflection coating deposited by ALD has a significant impact on the optoelectronic properties of the silicon solar cell. For about 80 nm of Al2O3 the best results were obtained in the wavelength range of 400 to 800 nm reducing the reflection to less than 1%. The difference in the solar cells efficiency between with and without antireflection coating was 5.28%. The LBIC scan measurements may indicate a positive influence of the thin film Al2O3 on the bulk passivation of the silicon.

  5. Crack Propagation Resistance of α-Al2O3 Reinforced Pulsed Laser-Deposited Hydroxyapatite Coating on 316 Stainless Steel

    NASA Astrophysics Data System (ADS)

    Bajpai, Shubhra; Gupta, Ankur; Pradhan, Siddhartha Kumar; Mandal, Tapendu; Balani, Kantesh

    2014-09-01

    Hydroxyapatite (HA) is a widely used bioceramic known for its chemical similarity with that of bone and teeth (Ca/P ratio of 1.67). But, owing to its extreme brittleness, α-Al2O3 is reinforced with HA and processed as a coating via pulsed laser deposition (PLD). Reinforcement of α-Al2O3 (50 wt.%) in HA via PLD on 316L steel substrate has shown modulus increase by 4% and hardness increase by 78%, and an improved adhesion strength of 14.2 N (improvement by 118%). Micro-scratching has shown an increase in the coefficient-of-friction from 0.05 (pure HA) to 0.17 (with 50 wt.% Al2O3) with enhancement in the crack propagation resistance (CPR) up to 4.5 times. Strong adherence of PLD HA-Al2O3 coatings (~4.5 times than that of HA coating) is attributed to efficient release of stored tensile strain energy (~17 × 10-3 J/m2) in HA-Al2O3 composites, making it a potential damage-tolerant bone-replacement surface coating.

  6. Atomic Layer Deposition Al2O3 Coatings Significantly Improve Thermal, Chemical, and Mechanical Stability of Anodic TiO2 Nanotube Layers

    PubMed Central

    2017-01-01

    We report on a very significant enhancement of the thermal, chemical, and mechanical stability of self-organized TiO2 nanotubes layers, provided by thin Al2O3 coatings of different thicknesses prepared by atomic layer deposition (ALD). TiO2 nanotube layers coated with Al2O3 coatings exhibit significantly improved thermal stability as illustrated by the preservation of the nanotubular structure upon annealing treatment at high temperatures (870 °C). In addition, a high anatase content is preserved in the nanotube layers against expectation of the total rutile conversion at such a high temperature. Hardness of the resulting nanotube layers is investigated by nanoindentation measurements and shows strongly improved values compared to uncoated counterparts. Finally, it is demonstrated that Al2O3 coatings guarantee unprecedented chemical stability of TiO2 nanotube layers in harsh environments of concentrated H3PO4 solutions. PMID:28291942

  7. Atomic Layer Deposition Al2O3 Coatings Significantly Improve Thermal, Chemical, and Mechanical Stability of Anodic TiO2 Nanotube Layers.

    PubMed

    Zazpe, Raul; Prikryl, Jan; Gärtnerova, Viera; Nechvilova, Katerina; Benes, Ludvik; Strizik, Lukas; Jäger, Ales; Bosund, Markus; Sopha, Hanna; Macak, Jan M

    2017-04-04

    We report on a very significant enhancement of the thermal, chemical, and mechanical stability of self-organized TiO2 nanotubes layers, provided by thin Al2O3 coatings of different thicknesses prepared by atomic layer deposition (ALD). TiO2 nanotube layers coated with Al2O3 coatings exhibit significantly improved thermal stability as illustrated by the preservation of the nanotubular structure upon annealing treatment at high temperatures (870 °C). In addition, a high anatase content is preserved in the nanotube layers against expectation of the total rutile conversion at such a high temperature. Hardness of the resulting nanotube layers is investigated by nanoindentation measurements and shows strongly improved values compared to uncoated counterparts. Finally, it is demonstrated that Al2O3 coatings guarantee unprecedented chemical stability of TiO2 nanotube layers in harsh environments of concentrated H3PO4 solutions.

  8. Enhanced density of negative fixed charges in Al2O3 layers on Si through a subsequent deposition of TiO2

    NASA Astrophysics Data System (ADS)

    Schneider, Thomas; Ziegler, Johannes; Kaufmann, Kai; Ilse, Klemens; Sprafke, Alexander; Wehrspohn, Ralf B.

    2016-04-01

    The passivation of silicon surfaces play an important role for achieving high-efficiency crystalline silicon solar cells. In this work, a stack system comprising of 20nm Al2O3 with a 22nm TiO2 topping layer was deposited on p-type Si using thermal atomic layer deposition (ALD) and was investigated regarding its passivation quality. Quasi-steady-state photo conductance (QSSPC) measurements reveal that the minority carrier lifetime at an injection density of 1015cm-3 increased from 1.10ms to 1.96ms after the deposition of TiO2, which shows that the deposition of TiO2 onto Al2O3 is capable of enhancing its passivation quality. Capacity voltage (CV) measurements show that the amount of negative charges in the dielectric layer has increased from -2.4·1012cm-2 to -6.3·1012cm-2 due to the deposition of TiO2. The location of the additional charges was analyzed in this work by etching the dielectric layer stack in several steps. After each step CV measurements were performed. It is found that the additional negative charges are created within the Al2O3 layer. Additionally, ToF-SIMS measurements were performed to check for diffusion processes within the Al2O3 layer.

  9. WE-AB-BRB-08: Progress Towards a 2D OSL Dosimetry System Using Al2O3:C Films

    SciTech Connect

    Ahmed, M F; Yukihara, E; Schnell, E; Ahmad, S; Akselrod, M; Brons, S; Greilich, S; Jakel, O; Osinga, J

    2015-06-15

    Purpose: To develop a 2D dosimetry system based on the optically stimulated luminescence (OSL) of Al{sub 2}O{sub 3}:C films for medical applications. Methods: A 2D laser scanning OSL reader was built for readout of newly developed Al2O3:C films (Landauer Inc.). An image reconstruction algorithm was developed to correct for inherent effects introduced by reader design and detector properties. The system was tested using irradiations with photon and carbon ion beams. A calibration was obtained using a 6 MV photon beam from clinical accelerator and the dose measurement precision was tested using a range of doses and different dose distributions (flat field and wedge field). The dynamic range and performance of the system in the presence of large dose gradients was also tested using 430 MeV/u {sup 12}C single and multiple pencil beams. All irradiations were performed with Gafchromic EBT3 film for comparison. Results: Preliminary results demonstrate a near-linear OSL dose response to photon fields and the ability to measure dose in dose distributions such as flat field and wedge field. Tests using {sup 12}C pencil beam demonstrate ability to measure doses over four orders of magnitude. The dose profiles measured by the OSL film generally agreed well with that measured by the EBT3 film. The OSL image signal-to-noise ratio obtained in the current conditions require further improvement. On the other hand, EBT3 films had large uncertainties in the low dose region due to film-to-film or intra-film variation in the background. Conclusion: A 2D OSL dosimetry system was developed and initial tests have demonstrated a wide dynamic range as well as good agreement between the delivered and measured doses. The low background, wide dynamic range and wide range of linearity in dose response observed for the Al{sub 2}O{sub 3}:C OSL film can be beneficial for dosimetry in radiation therapy applications, especially for small field dosimetry. This work has been funded by Landauer Inc. Dr

  10. A light-stimulated synaptic transistor with synaptic plasticity and memory functions based on InGaZnOx-Al2O3 thin film structure

    NASA Astrophysics Data System (ADS)

    Li, H. K.; Chen, T. P.; Liu, P.; Hu, S. G.; Liu, Y.; Zhang, Q.; Lee, P. S.

    2016-06-01

    In this work, a synaptic transistor based on the indium gallium zinc oxide (IGZO)-aluminum oxide (Al2O3) thin film structure, which uses ultraviolet (UV) light pulses as the pre-synaptic stimulus, has been demonstrated. The synaptic transistor exhibits the behavior of synaptic plasticity like the paired-pulse facilitation. In addition, it also shows the brain's memory behaviors including the transition from short-term memory to long-term memory and the Ebbinghaus forgetting curve. The synapse-like behavior and memory behaviors of the transistor are due to the trapping and detrapping processes of the holes, which are generated by the UV pulses, at the IGZO/Al2O3 interface and/or in the Al2O3 layer.

  11. Effect of annealing temperature on the structural reorganization of Eu3+ optical centers in Al2O3-Eu2O3-BiOF gel films

    NASA Astrophysics Data System (ADS)

    Malashkevich, G. E.; Kornienko, A. A.; Dunina, E. B.; Prusova, I. V.; Shevchenko, G. P.; Bokshits, Yu. V.

    2007-06-01

    The dependence of the structural reorganization of Eu3+ optical centers in Al2O3-Eu2O3-BiOF films on the annealing temperature has been investigated. It is shown by the methods of crystal field theory and computer simulation that the increase in the annealing temperature from 700 to 1100 °C leads to removal of bismuth from Eu-O-Bi complex centers with the C 3V symmetry in the Al2O3 structure and the change in symmetry from D 3 to O h for a large fraction of EuAlO3 centers.

  12. Morphological and optical properties of sol-gel derived 6SrO·6BaO·7Al 2O 3 thin films

    NASA Astrophysics Data System (ADS)

    Chavhan, P. M.; Sharma, Anubha; Sharma, R. K.; Kaushik, N. K.

    2010-01-01

    A novel 6SrO·6BaO·7Al 2O 3 (S6B6A7) thin film deposited onto soda lime float glass via sol-gel dip coating technique is reported. The morphological and compositional properties of the S6B6A7 thin films have been investigated using scanning electron microscopy (SEM), atomic force microscopy (AFM) and X-ray photoelectron spectroscopy (XPS) revealing that the films were composed of S6B6A7 nanoparticles. The optical properties of the S6B6A7 films are affected by sol concentration, film thickness and annealing temperature as revealed by UV-vis transmittance. The transparency of S6B6A7 films improved on increasing annealing temperature up to 450 °C in air. The S6B6A7 films prepared using 2, 5, and 8 (wt.%) sols and annealed at 450 °C exhibit an average transmittance of over ˜91% in wide visible range.

  13. Deposition of duplex Al 2O 3/aluminum coatings on steel using a combined technique of arc spraying and plasma electrolytic oxidation

    NASA Astrophysics Data System (ADS)

    Gu, Weichao; Shen, Dejiu; Wang, Yulin; Chen, Guangliang; Feng, Wenran; Zhang, Guling; Fan, Songhua; Liu, Chizi; Yang, Size

    2006-02-01

    Plasma electrolytic oxidation (PEO) is a cost-effective technique that can be used to prepare ceramic coatings on metals such as Ti, Al, Mg, Nb, etc., and their alloys, but this promising technique cannot be used to modify the surface properties of steels, which are the most widely used materials in engineering. In order to prepare metallurgically bonded ceramic coatings on steels, a combined technique of arc spraying and plasma electrolytic oxidation (PEO) was adopted. In this work, metallurgically bonded ceramic coatings on steels were obtained using this method. We firstly prepared aluminum coatings on steels by arc spraying, and then obtained the metallurgically bonded ceramic coatings on aluminum coatings by PEO. The characteristics of duplex coatings were analyzed by X-ray diffractometer (XRD) and scanning electron microscopy (SEM). The corrosion and wear resistance of the ceramic coatings were also studied. The results show that, duplex Al 2O 3/aluminum coatings have been deposited on steel substrate after the combined treatment. The ceramic coatings are mainly composed of α-Al 2O 3, γ-Al 2O 3, θ-Al 2O 3 and some amorphous phase. The duplex coatings show favorable corrosion and wear resistance properties. The investigations indicate that the combination of arc spraying and plasma electrolytic oxidation proves a promising technique for surface modification of steels for protective purposes.

  14. Band offsets and trap-related electron transitions at interfaces of (100)InAs with atomic-layer deposited Al2O3

    NASA Astrophysics Data System (ADS)

    Chou, H.-Y.; O'Connor, E.; O'Mahony, A.; Povey, I. M.; Hurley, P. K.; Dong, Lin; Ye, P. D.; Afanas'ev, V. V.; Houssa, M.; Stesmans, A.

    2016-12-01

    Spectral analysis of optically excited currents in single-crystal (100)InAs/amorphous (a-)Al2O3/metal structures allows one to separate contributions stemming from the internal photoemission (IPE) of electrons into alumina and from the trapping-related displacement currents. IPE spectra suggest that the out-diffusion of In and, possibly, its incorporation in a-Al2O3 lead to the development of ≈0.4 eV wide conduction band (CB) tail states. The top of the InAs valence band is found at 3.45 ± 0.10 eV below the alumina CB bottom, i.e., at the same energy as at the GaAs/a-Al2O3 interface. This corresponds to the CB and the valence band offsets at the InAs/a-Al2O3 interface of 3.1 ± 0.1 eV and 2.5 ± 0.1 eV, respectively. However, atomic-layer deposition of alumina on InAs results in additional low-energy electron transitions with spectral thresholds in the range of 2.0-2.2 eV, which is close to the bandgap of AlAs. The latter suggests the interaction of As with Al, leading to an interlayer containing Al-As bonds providing a lower barrier for electron injection.

  15. O3-sourced atomic layer deposition of high quality Al2O3 gate dielectric for normally-off GaN metal-insulator-semiconductor high-electron-mobility transistors

    NASA Astrophysics Data System (ADS)

    Huang, Sen; Liu, Xinyu; Wei, Ke; Liu, Guoguo; Wang, Xinhua; Sun, Bing; Yang, Xuelin; Shen, Bo; Liu, Cheng; Liu, Shenghou; Hua, Mengyuan; Yang, Shu; Chen, Kevin J.

    2015-01-01

    High quality Al2O3 film grown by atomic layer deposition (ALD), with ozone (O3) as oxygen source, is demonstrated for fabrication of normally-off AlGaN/GaN metal-insulator-semiconductor high-electron-mobility transistors (MIS-HEMTs). Significant suppression of Al-O-H and Al-Al bonds in ALD-Al2O3 has been realized by substituting conventional H2O source with O3. A high dielectric breakdown E-field of 8.5 MV/cm and good TDDB behavior are achieved in a gate dielectric stack consisting of 13-nm O3-Al2O3 and 2-nm H2O-Al2O3 interfacial layer on recessed GaN. By using this 15-nm gate dielectric and a high-temperature gate-recess technique, the density of positive bulk/interface charges in normally-off AlGaN/GaN MIS-HEMTs is remarkably suppressed to as low as 0.9 × 1012 cm-2, contributing to the realization of normally-off operation with a high threshold voltage of +1.6 V and a low specific ON-resistance RON,sp of 0.49 mΩ cm2.

  16. Distribution of Oxygen Vacancies and Gadolinium Dopants in ZrO2-CeO2 Multi-Layer Films Grown on α-Al2O3

    SciTech Connect

    Wang, Chong M.; Engelhard, Mark H.; Azad, Samina; Saraf, Laxmikant V.; McCready, David E.; Shutthanandan, V.; Yu, Zhongqing; Thevuthasan, Suntharampillai; Watanabe, M.; Williams, D. B.

    2006-06-15

    Gd-doped ZrO2 and CeO2 multi-layer films were deposited on α-Al2O3 (0001) using oxygen plasma assisted molecular beam epitaxy. Oxygen vacancies and Gd dopant distributions were investigated in these multi-layer films using x-ray diffraction (XRD), conventional and high-resolution transmission electron microscopy (HRTEM), annular dark-filed imaging in scanning transmission electron microscopy (STEM), energy dispersive x-ray spectroscopy (EDS) elemental mapping and x-ray photoelectron spectroscopy (XPS) depth profiling. EDS and XPS reveal that Gd concentration in the ZrO2 layer is lower than that in the CeO2 layer. As a result, higher oxygen vacancy concentration exists in CeO2 layers compared to that in ZrO2 layers. In addition, Gd is found to segregate only at the interfaces formed during the deposition of CeO2 layers on ZrO2 layers. On the other hand, the interfaces formed during the deposition of ZrO2 layers on CeO2 layers did not show any Gd segregation. The Gd segregation behavior at the every other interface is believed to be associated with the low solubility of Gd in ZrO2.

  17. Atomic layer deposition of Al-doped ZnO/Al2O3 double layers on vertically aligned carbon nanofiber arrays.

    PubMed

    Malek, Gary A; Brown, Emery; Klankowski, Steven A; Liu, Jianwei; Elliot, Alan J; Lu, Rongtao; Li, Jun; Wu, Judy

    2014-05-14

    High-aspect-ratio, vertically aligned carbon nanofibers (VACNFs) were conformally coated with aluminum oxide (Al2O3) and aluminum-doped zinc oxide (AZO) using atomic layer deposition (ALD) in order to produce a three-dimensional array of metal-insulator-metal core-shell nanostructures. Prefunctionalization before ALD, as required for initiating covalent bonding on a carbon nanotube surface, was eliminated on VACNFs due to the graphitic edges along the surface of each CNF. The graphitic edges provided ideal nucleation sites under sequential exposures of H2O and trimethylaluminum to form an Al2O3 coating up to 20 nm in thickness. High-resolution transmission electron microscopy (HRTEM) and scanning electron microscopy images confirmed the conformal core-shell AZO/Al2O3/CNF structures while energy-dispersive X-ray spectroscopy verified the elemental composition of the different layers. HRTEM selected area electron diffraction revealed that the as-made Al2O3 by ALD at 200 °C was amorphous, and then, after annealing in air at 450 °C for 30 min, was converted to polycrystalline form. Nevertheless, comparable dielectric constants of 9.3 were obtained in both cases by cyclic voltammetry at a scan rate of 1000 V/s. The conformal core-shell AZO/Al2O3/VACNF array structure demonstrated in this work provides a promising three-dimensional architecture toward applications of solid-state capacitors with large surface area having a thin, leak-free dielectric.

  18. Fabrication and characterization of highly luminescent Er3+:Al2O3 thin films with optimized growth parameters

    NASA Astrophysics Data System (ADS)

    Nayar, Priyanka; Zhu, Xue-Yi; Yang, Fuyi; Lu, Minghui; Lakshminarayana, G.; Liu, Xiao Ping; Chen, Yan-Feng; Kityk, I. V.

    2016-10-01

    Erbium doped amorphous alumina thin films were fabricated using Co-sputtering technique in various depositions runs with varying parameters for optimizing the deposition parameters to obtain the films with best optical performance. The main subject of investigation includes the effects of change in various deposition parameters such as substrate heating, radio frequency (RF) power and oxygen pressure inside the chamber while deposition. High quality as-deposited films with various Er concentrations and low carbon content have been confirmed by XPS. Substrate heating ∼500 °C was found to be very effective in getting highly dense films with high refractive index of 1.70 at 1530-1570 nm emission band. The Er3+-doped films showed very intense near-infrared luminescence peak at 1550 nm even without any post-deposition annealing treatment.

  19. Thermal Stability of the Dynamic Magnetic Properties of FeSiAl-Al2O3 and FeSiAl-SiO2 Films Grown by Gradient-Composition Sputtering Technique

    NASA Astrophysics Data System (ADS)

    Zhong, Xiaoxi; Phuoc, Nguyen N.; Soh, Wee Tee; Ong, C. K.; Peng, Long; Li, Lezhong

    2017-01-01

    We carry out a systematic investigation of the dynamic magnetic properties of FeSiAl-Al2O3 and FeSiAl-SiO2 thin films prepared by gradient-composition deposition technique with respect to temperature in the range of 300 K to 420 K. It was found that the magnetic anisotropy field ( H K) and ferromagnetic resonance frequency ( f FMR) are increased with increasing deposition angle ( β) due to the enhancement of stress ( σ) when concentrations of Al and O or Si and O are increased. The thermal stability of FeSiAl-Al2O3 films show a very interesting behavior with the magnetic anisotropy increasing with temperature when the deposition angle is increased. In contrast, when the deposition angle is lower, the usual trend of decreasing magnetic anisotropy with increasing temperature is observed. Moreover, the temperature-dependent behaviors of the dynamic permeability and effective Gilbert damping coefficient ( α eff) for FeSiAl-Al2O3 and FeSiAl-SiO2 films at different deposition angles are discussed in detail.

  20. Electron stimulated oxidation of Al(111) in H2O vapor: Dipole orientation effects in the Al2O3 thin film

    NASA Astrophysics Data System (ADS)

    Popova, I.; Zhukov, V.; Yates, J. T.; Chen, J. G.

    1999-12-01

    The electron stimulated oxidation of Al(111) using H2O(g) as a source of oxygen has been investigated at 300 K using near edge x-ray absorption fine structure (NEXAFS) and Auger electron spectroscopy. Irradiation with electrons (100 eV, 50 μA/cm2) produced thick Al2O3 film layers (up to 15 Å), compared to the films grown thermally (4 Å) by the same water exposure. A preferential normal orientation of the O-Al bonds was found for the films grown by the electron assisted process, causing the O K-edge NEXAFS spectra to depend on the incident angle of the polarized x-ray beam. In contrast, little polarization of the O-Al bonds was found for the case of Al2O3 films grown by thermal oxidation in H2O(g).

  1. Sputtering-deposition of Ru nanoparticles onto Al2O3 modified with imidazolium ionic liquids: synthesis, characterisation and catalysis.

    PubMed

    Foppa, Lucas; Luza, Leandro; Gual, Aitor; Weibel, Daniel E; Eberhardt, Dario; Teixeira, Sérgio R; Dupont, Jairton

    2015-02-14

    Well-distributed Ru nanoparticles (Ru-NPs) were produced over Al(2)O(3) supports modified with covalently anchored imidazolium ionic liquids (ILs) containing different anions and cation lateral alkyl chain lengths by simple sputtering from a Ru foil. These Ru-NPs were active catalysts for the hydrogenation of benzene. Furthermore, depending on the nature of the IL used to modify the support (hydrophilic or hydrophobic), different catalytic behaviours were observed. Turnover numbers (TON) as high as 27 000 with a turnover frequency (TOF) of 2.73 s(-1) were achieved with Ru-NPs of 6.4 nm supported in Al(2)O(3) modified with an IL containing the N(SO(2)CF(3))2(-) anion, whereas higher initial cyclohexene selectivities (ca. 20% at 1% benzene conversion) were attained for Ru-NPs of 6.6 nm in the case where Cl(-) and BF(4)(-) anions were used. Such observations strongly suggest that thin layers of ILs surround the NP surface, modifying the reactivity of these catalytic systems. These findings open a new window of opportunity in the development of size-controlled Ru-NPs with tuneable reactivity.

  2. Evaluation of the optoelectronic properties and corrosion behavior of Al2O3-doped ZnO films prepared by dc pulsed magnetron sputtering

    NASA Astrophysics Data System (ADS)

    Zubizarreta, C.; Berasategui, E. G.; Bayón, R.; Escobar Galindo, R.; Barros, R.; Gaspar, D.; Nunes, D.; Calmeiro, T.; Martins, R.; Fortunato, E.; Barriga, J.

    2014-12-01

    The main requirements for transparent conducting oxide (TCO) films acting as electrodes are a high transmission rate in the visible spectral region and low resistivity. However, in many cases, tolerance to temperature and humidity exposure is also an important requirement to be fulfilled by the TCOs to assure proper operation and durability. Besides improving current encapsulation methods, the corrosion resistance of the developed TCOs must also be enhanced to warrant the performance of optoelectronic devices. In this paper the performance of aluminum-doped zinc oxide (AZO) films deposited by pulsed dc magnetron sputtering has been studied. Structure, optical transmittance/reflectance, electrical properties (resistivity, carrier concentration and mobility) and corrosion resistance of the developed coatings have been analyzed as a function of the doping of the target and the coating thickness. Films grown from a 2.0 wt% Al2O3 target with a thickness of approximately 1 µm showed a very low resistivity of 6.54  ×  10-4 Ωcm and a high optical transmittance in the visible range of 84%. Corrosion studies of the developed samples have shown very low corrosion currents (nanoamperes), very high corrosion resistances (in the order of 107 Ω) and very high electrochemical stability, indicating no tendency for electrochemical corrosion degradation.

  3. Microstructural and Tribological Properties of Al2O3-13pctTiO2 Thermal Spray Coatings Deposited by Flame Spraying

    NASA Astrophysics Data System (ADS)

    Younes, Rassim; Bradai, Mohand Amokrane; Sadeddine, Abdelhamid; Mouadji, Youcef; Bilek, Ali; Benabbas, Abderrahim

    2015-10-01

    T He present investigation has been conducted to study the tribological properties of Al2O3-13pctTiO2 (AT-13) ceramic coatings deposited on a low carbon steel type E335 by using a thermal flame spray technique. The microstructure and phase composition of wire and coatings were analyzed by scanning electron microscope, energy dispersive spectroscopy (EDS), and X-ray diffraction (XRD). Measurements of micro hardness were also performed on the surface of the coatings. The tribological tests were carried out using a pin-on-disk tribometer at different loads. All tests were performed using two disks as counter body, namely Al2O3-ZrO2 (AZ-25) and Al2O3-TiO2 (AT-3) which formed couple 1 and couple 2, respectively, in order to work out the wear rate and friction coefficient. Roughness profiles were also evaluated before and after each test. The SEM showed that the dense microstructure of Al2O3-TiO2 (AT-13) coatings have a homogenous lamellar morphology and complex of several phases with the presence of porosities and unmelted particles. The XRD analysis of the wire before the spray showed a majority phase of α-Al2O3 rhombohedral structure and a secondary phase of Al2TiO5 orthorhombic structure with little traces of TiO2 (rutile) tetragonal structure, whereas the XRD of the coating revealed the disappearance of TiO2 replaced by the formation of a new metastable phase γ-Al2O3 cubic structure. The tribological results showed that the applied contact pressure affects the variation of the friction coefficient with time and that it decreases with the rise of the normal force of contact. It was found also that the couple 2 with nearly chemical compositions of spray-coated (AT-13) and disk (AT-3) exhibited much higher wear resistance than the couple 1 although they have sliding coefficient of friction nearly.

  4. Chemical vapor deposition of monolayer MoS2 directly on ultrathin Al2O3 for low-power electronics

    NASA Astrophysics Data System (ADS)

    Bergeron, Hadallia; Sangwan, Vinod K.; McMorrow, Julian J.; Campbell, Gavin P.; Balla, Itamar; Liu, Xiaolong; Bedzyk, Michael J.; Marks, Tobin J.; Hersam, Mark C.

    2017-01-01

    Monolayer MoS2 has recently been identified as a promising material for high-performance electronics. However, monolayer MoS2 must be integrated with ultrathin high-κ gate dielectrics in order to realize practical low-power devices. In this letter, we report the chemical vapor deposition (CVD) of monolayer MoS2 directly on 20 nm thick Al2O3 grown by atomic layer deposition (ALD). The quality of the resulting MoS2 is characterized by a comprehensive set of microscopic and spectroscopic techniques. Furthermore, a low-temperature (200 °C) Al2O3 ALD process is developed that maintains dielectric integrity following the high-temperature CVD of MoS2 (800 °C). Field-effect transistors (FETs) derived from these MoS2/Al2O3 stacks show minimal hysteresis with a sub-threshold swing as low as ˜220 mV/decade, threshold voltages of ˜2 V, and current ION/IOFF ratio as high as ˜104, where IOFF is defined as the current at zero gate voltage as is customary for determining power consumption in complementary logic circuits. The system presented here concurrently optimizes multiple low-power electronics figures of merit while providing a transfer-free method of integrating monolayer MoS2 with ultrathin high-κ dielectrics, thus enabling a scalable pathway for enhancement-mode FETs for low-power applications.

  5. Structure, magnetic, and microwave properties of thick Ba-hexaferrite films epitaxially grown on GaN/Al2O3 substrates

    NASA Astrophysics Data System (ADS)

    Chen, Z.; Yang, A.; Mahalingam, K.; Averett, K. L.; Gao, J.; Brown, G. J.; Vittoria, C.; Harris, V. G.

    2010-06-01

    Thick barium hexaferrite [BaOṡ(Fe2O3)6] films, having the magnetoplumbite structure (i.e., Ba M), were epitaxially grown on c-axis oriented GaN/Al2O3 substrates by pulsed laser deposition followed by liquid phase epitaxy. X-ray diffraction showed (0,0,2n) crystallographic alignment with pole figure analyses confirming epitaxial growth. High resolution transmission electron microscopy images revealed magnetoplumbite unit cells stacked with limited interfacial mixing. Saturation magnetization, 4πMs, was measured for as-grown films to be 4.1±0.3 kG with a perpendicular magnetic anisotropy field of 16±0.3 kOe. Ferromagnetic resonance linewidth, the peak-to-peak power absorption derivative at 53 GHz, was 86 Oe. These properties will prove enabling for the integration of low loss Ba M ferrite microwave passive devices with active semiconductor circuit elements in systems-on-a-wafer architecture.

  6. In situ study on the thermal stability and interfaces properties of Er2O3/Al2O3/Si multi stacked films by X-ray photoelectron spectroscopy

    NASA Astrophysics Data System (ADS)

    Gao, Baolong; Mamat, Mamatrishat; Ghupur, Yasenjan; Ablat, Abduleziz; Ibrahim, Kurash; Wang, Jiaou; Liu, Chen; Zhao, Jiali

    2017-04-01

    Ultrathin high-k dielectric films with Er2O3/Al2O3/Si structure were fabricated by the pulsed laser deposition (PLD) technique. The samples were annealed in O2 ambient at the various temperatures. The interface reaction, and as well as the thermal stability between Si substrate and Er2O3 layer were studied in situ using X-ray photoelectron spectroscopy (XPS). The Film thickness was measured with scanning electron microscope (SEM). The experimental results indicate that the thickness of the silicate layer lessening at the interface with increasing of the thickness of Al2O3, and the production of the SiOx and the silicide is more easily formed than Er-silicate after annealing at the lower temperature because of the similarity of the structure and the small lattice mismatch.

  7. Josephson effect in Nb/Al2O3/Al/MgB2 large-area thin-film heterostructures

    NASA Astrophysics Data System (ADS)

    Carapella, G.; Martucciello, N.; Costabile, G.; Ferdeghini, C.; Ferrando, V.; Grassano, G.

    2002-04-01

    We report the demonstration of dc and ac Josephson effects in Nb/Al2O3/Al/MgB2 thin-film heterostructure. The heterostructure exhibits moderately hysteretic current-voltage characteristic with a dc Josephson current branch and regular microwave-induced Shapiro steps. From conductance spectrum, a gap of about 2 meV at 7.7 K is estimated for the proximized surface of MgB2 electrode.

  8. Enhanced photovoltaic performance of inverted pyramid-based nanostructured black-silicon solar cells passivated by an atomic-layer-deposited Al2O3 layer.

    PubMed

    Chen, Hong-Yan; Lu, Hong-Liang; Ren, Qing-Hua; Zhang, Yuan; Yang, Xiao-Feng; Ding, Shi-Jin; Zhang, David Wei

    2015-10-07

    Inverted pyramid-based nanostructured black-silicon (BS) solar cells with an Al2O3 passivation layer grown by atomic layer deposition (ALD) have been demonstrated. A multi-scale textured BS surface combining silicon nanowires (SiNWs) and inverted pyramids was obtained for the first time by lithography and metal catalyzed wet etching. The reflectance of the as-prepared BS surface was about 2% lower than that of the more commonly reported upright pyramid-based SiNW BS surface over the whole of the visible light spectrum, which led to a 1.7 mA cm(-2) increase in short circuit current density. Moreover, the as-prepared solar cells were further passivated by an ALD-Al2O3 layer. The effect of annealing temperature on the photovoltaic performance of the solar cells was investigated. It was found that the values of all solar cell parameters including short circuit current, open circuit voltage, and fill factor exhibit a further increase under an optimized annealing temperature. Minority carrier lifetime measurements indicate that the enhanced cell performance is due to the improved passivation quality of the Al2O3 layer after thermal annealing treatments. By combining these two refinements, the optimized SiNW BS solar cells achieved a maximum conversion efficiency enhancement of 7.6% compared to the cells with an upright pyramid-based SiNWs surface and conventional SiNx passivation.

  9. Diamond field-effect transistors for RF power electronics: Novel NO2 hole doping and low-temperature deposited Al2O3 passivation

    NASA Astrophysics Data System (ADS)

    Kasu, Makoto

    2017-01-01

    Diamond possesses a combination of exceptional physical properties and is expected to be used as a semiconductor material in high-efficiency and high-power electronic devices. In this study, hole doping was observed when using NO2 molecules on a H-diamond surface. The activation energy of hole concentration in NO2/H-diamond was measured as 0.006 eV, and holes were fully activated at room temperature. A thermal stabilization of the hole channel was realized by passivation with an atomic-layer-deposited Al2O3 layer. The passivation method enabled the realization of a thermally stable high-performance diamond field-effect transistor (FET), which exhibited high-performance DC and RF characteristics. NO2 hole-doping and Al2O3-passivation technologies enabled reproducible measurements of MOS structure electric properties. Such technologies also facilitated observations of two-dimensional holes at the MOS interface and type-II band alignment of Al2O3/NO2/H-diamond. Additionally, the band diagram under various gate bias conditions was proposed on the basis of capacitance-voltage measurements and analysis using Poisson’s equations.

  10. Processing of n+/p-/p+ strip detectors with atomic layer deposition (ALD) grown Al2O3 field insulator on magnetic Czochralski silicon (MCz-si) substrates

    NASA Astrophysics Data System (ADS)

    Härkönen, J.; Tuovinen, E.; Luukka, P.; Gädda, A.; Mäenpää, T.; Tuominen, E.; Arsenovich, T.; Junkes, A.; Wu, X.; Li, Z.

    2016-08-01

    Detectors manufactured on p-type silicon material are known to have significant advantages in very harsh radiation environment over n-type detectors, traditionally used in High Energy Physics experiments for particle tracking. In p-type (n+ segmentation on p substrate) position-sensitive strip detectors, however, the fixed oxide charge in the silicon dioxide is positive and, thus, causes electron accumulation at the Si/SiO2 interface. As a result, unless appropriate interstrip isolation is applied, the n-type strips are short-circuited. Widely adopted methods to terminate surface electron accumulation are segmented p-stop or p-spray field implantations. A different approach to overcome the near-surface electron accumulation at the interface of silicon dioxide and p-type silicon is to deposit a thin film field insulator with negative oxide charge. We have processed silicon strip detectors on p-type Magnetic Czochralski silicon (MCz-Si) substrates with aluminum oxide (Al2O3) thin film insulator, grown with Atomic Layer Deposition (ALD) method. The electrical characterization by current-voltage and capacitance-voltage measurement shows reliable performance of the aluminum oxide. The final proof of concept was obtained at the test beam with 200 GeV/c muons. For the non-irradiated detector the charge collection efficiency (CCE) was nearly 100% with a signal-to-noise ratio (S/N) of about 40, whereas for the 2×1015 neq/cm2 proton irradiated detector the CCE was 35%, when the sensor was biased at 500 V. These results are comparable with the results from p-type detectors with the p-spray and p-stop interstrip isolation techniques. In addition, interestingly, when the aluminum oxide was irradiated with Co-60 gamma-rays, an accumulation of negative fixed oxide charge in the oxide was observed.

  11. Al2O3 passivation effect in HfO2·Al2O3 laminate structures grown on InP substrates.

    PubMed

    Kang, Hang-Kyu; Kang, Yu-Seon; Kim, Dae-Kyoung; Baik, Min; Song, Jin Dong; An, Youngseo; Kim, Hyoungsub; Cho, Mann-Ho

    2017-04-07

    The passivation effect of an Al2O3 layer on electrical properties were investigated in HfO2--Al2O3 laminate structures grown on InP substrate by atomic layer deposition (ALD). The chemical state using HR-XPS showed that interfacial reactions were dependent on the presence of the Al2O3 passivation layer and its sequence in the HfO2--Al2O3 laminate structures. The Al2O3/HfO2/Al2O3 structure showed the best electrical characteristics, due to the interfacial reaction, compared with those of different stacking structures. The top Al2O3 layer suppressed the interdiffusion of oxidizing species into the HfO2 films, while the bottom Al2O3 layer blocked the outdiffusion of In and P atoms. As a result, the formation of In-O bonds was effectively suppressed in the Al2O3/HfO2/Al2O3/InP structure than that of HfO2-on-InP system. Moreover, conductance data revealed that the Al2O3/ layer on InP reduces the midgap traps to 2.6 × 10(12) eV(-1)cm(-2) (compared with that of HfO2/InP = 5.4 × 10(12) eV(-1)cm(-2)). The suppression of gap states caused by the outdiffusion of In atoms significantly controls the degradation of capacitors caused by leakage current through the stacked oxide layers.

  12. In-situ hybrid study of thermal behaviour of Znsbnd Ni and Znsbnd Nisbnd Al2O3 nanocrystallite thin films induced TEA/MEA by electrocodeposition

    NASA Astrophysics Data System (ADS)

    Abdulwahab, M.; Fayomi, O. S. I.; Popoola, A. P. I.; Dodo, M. R.

    Our present investigation focuses on the thermal stability of already developed electroforms of Znsbnd Ni and Znsbnd Nisbnd Al2O3 thin films induced with triethylamine (TEA) and monoethylamine (MEA) as surfactant by electrocodeposition on mild steel substrate with the aim to re-examine its micro-hardness and degradation behaviour in static sodium chloride solution. In the event, the samples were thermally treated at 200 °C and air cooled. The results obtained showed that the developed composites are thermally stable with hardness value of the Znsbnd Nisbnd Al2O3 coated; 185 Hv increased to 190.5 Hv indicating a 2.89% improvement. Noticeably, in the Znsbnd Ni coatings, a decrease in the hardness with 26.67% was observed. The oxidation resistance was however favored for both composites.

  13. Dependence of electron mobility on gate voltage sweeping width and deposition temperature in MOSFETs with HfO2/Al2O3/InGaAs gate stacks

    NASA Astrophysics Data System (ADS)

    Ohsawa, Kazuto; Netsu, Seiko; Kise, Nobukazu; Noguchi, Shinji; Miyamoto, Yasuyuki

    2017-04-01

    In this study, we fabricated MOSFETs with Al2O3/InGaAs or HfO2/Al2O3/InGaAs gate stacks. The surface was subjected to nitrogen plasma and trimethylaluminum cleaning prior to low-temperature atomic layer deposition. Electron mobility was extracted using the capacitance–gate voltage (C–V G) and drain current–gate voltage (I D–V G) characteristics. We determined that the mobility decreased when the gate voltage sweeping width increased during C–V G and I D–V G measurements. In addition, we determined that the lowering of the deposition temperature to 120 °C improved the mobility of MOSFETs with HfO2/Al2O3/InGaAs gate stacks as compared with that corresponding to deposition at 300 °C. Furthermore, HfO2/Al2O3/InGaAs gate stacks with various Al2O3 thicknesses were fabricated. When the number of Al2O3 deposition cycles was more than 4, the mobility of MOSFETs with HfO2/Al2O3/InGaAs gate stacks improved, reaching the value of the Al2O3/InGaAs gate stack.

  14. Investigations of AlGaN/GaN MOS-HEMT with Al2O3 deposition by ultrasonic spray pyrolysis method

    NASA Astrophysics Data System (ADS)

    Chou, Bo-Yi; Hsu, Wei-Chou; Liu, Han-Yin; Lee, Ching-Sung; Wu, Yu-Sheng; Sun, Wen-Ching; Wei, Sung-Yen; Yu, Sheng-Min; Chiang, Meng-Hsueh

    2015-01-01

    This work investigates Al2O3/AlGaN/GaN metal-oxide-semiconductor high electron mobility transistors (MOS-HEMTs) grown on SiC substrate by using the non-vacuum ultrasonic spray pyrolysis deposition (USPD) method. The Al2O3 was deposited as gate dielectric and surface passivation simultaneously to effectively suppress gate leakage current, enhance output current density, reduce RF drain current collapse, and improve temperature-dependent stabilities performance. The present MOS-HEMT design has shown improved device performances with respect to a Schottky-gate HEMT, including drain-source saturation current density at zero gate bias (IDSS: 337.6 mA mm-1 → 462.9 mA mm-1), gate-voltage swing (GVS: 1.55 V → 2.92 V), two-terminal gate-drain breakdown voltage (BVGD: -103.8 V → -183.5 V), unity-gain cut-off frequency (fT: 11.3 GHz → 17.7 GHz), maximum oscillation frequency (fmax: 14.2 GHz → 19.1 GHz), and power added effective (P.A.E.: 25.1% → 43.6%). The bias conditions for measuring fT and fmax of the studied MOS-HEMT (Schottky-gate HEMT) are VGS = -2.5 (-2) V and VDS = 7 V. The corresponding VGS and VDS biases are -2.5 (-2) V and 15 V for measuring the P.A.E. characteristic. Moreover, small capacitance-voltage (C-V) hysteresis is obtained in the Al2O3-MOS structure by using USPD. Temperature-dependent characteristics of the present designs at 300-480 K are also studied.

  15. Effect of pH on mechanical, physical and tribological properties of electroless Ni-P-Al2O3 composite deposits for marine applications

    NASA Astrophysics Data System (ADS)

    Julka, Sahil; Ansari, Mohd Imran; Thakur, Dineshsingh G.

    2016-12-01

    Successful co-deposition of fine particulate matter within an Electroless Nickel-Phosphorous (ENi-P) matrix is dependent on various factors like bath composition, particle compatibility with metallic matrix, bath reactivity (pH), particle size and their distribution. ENi-P deposits incorporating Al2O3/Alumina in a disperse phase have varied effects on properties and attributes like surface roughness ( Ra), microhardness, wear resistance, corrosion resistance and surface morphology of the deposits obtained. This paper experimentally investigates the effect of alumina (1.55 g/L) on Ra, microhardness, surface morphology, deposition rate, wettability, wear resistance and corrosion resistance of ENi-P-Al2O3 composite deposits on mild steel substrates at bath pH 5, 7 and 9. Study reveals that optimum deposit parameters and deposition rates are achieved with bath pH. However, not much study has been undertaken concerning composite deposits obtained from higher bath pH or basic bath. This is attributable to the fact that at higher bath pH or alkaline baths, the bath gets unstable and eventually degrades or decomposes, thereby resulting in sub optimal or poor deposition. Hence, experimental investigations carried out by preparing suitable baths, operating under optimum conditions, and enabling successful composite deposition in acidic and alkaline baths have revealed that there is a significant improvement in the above mentioned properties of the as-deposited composite deposits, as the pH is increased from pH 5 to pH 9. This aspect can therefore be advantageously utilized for preparing various marine components like fasteners, nuts, bolts, washers, pipes, cables, components having relative motion etc.

  16. Nanostructured Er3+-doped SiO2-TiO2 and SiO2-TiO2-Al2O3 sol-gel thin films for integrated optics

    NASA Astrophysics Data System (ADS)

    Predoana, Luminita; Preda, Silviu; Anastasescu, Mihai; Stoica, Mihai; Voicescu, Mariana; Munteanu, Cornel; Tomescu, Roxana; Cristea, Dana

    2015-08-01

    The nanostructured multilayer silica-titania or silica-titania-alumina films doped with Er3+ were prepared by sol-gel method. The sol-gel method is a flexible and convenient way to prepare oxide films on several types of substrates, and for this reason it was extensively investigated for optical waveguides fabrication. The selected molar composition was 90%SiO2-10%TiO2 or 85%SiO2-10%TiO2-5% Al2O3 and 0.5% Er2O3. The films were characterized by Scanning Electron Microscopy (SEM), X-ray diffraction (XRD), Spectroellipsometry (SE), as well as by Atomic Force Microscopy (AFM) and photoluminescence (PL). The films deposited on Si/SiO2 substrate by dip-coating or spin-coating, followed by annealing at 900 °C, presented homogenous and continuous surface and good adherence to the substrate. Differences were noticed in the structure and properties of the prepared films, depending on the composition and the number of deposited layers. Channel optical waveguides were obtained by patterning Er3+-doped SiO2-TiO2 and SiO2-TiO2-Al2O3 sol-gel layers deposited on oxidized silicon wafers.

  17. The importance of dye chemistry and TiCl4 surface treatment in the behavior of Al2O3 recombination barrier layers deposited by atomic layer deposition in solid-state dye-sensitized solar cells.

    PubMed

    Brennan, Thomas P; Bakke, Jonathan R; Ding, I-Kang; Hardin, Brian E; Nguyen, William H; Mondal, Rajib; Bailie, Colin D; Margulis, George Y; Hoke, Eric T; Sellinger, Alan; McGehee, Michael D; Bent, Stacey F

    2012-09-21

    Atomic layer deposition (ALD) was used to fabricate Al(2)O(3) recombination barriers in solid-state dye-sensitized solar cells (ss-DSSCs) employing an organic hole transport material (HTM) for the first time. Al(2)O(3) recombination barriers of varying thickness were incorporated into efficient ss-DSSCs utilizing the Z907 dye adsorbed onto a 2 μm-thick nanoporous TiO(2) active layer and the HTM spiro-OMeTAD. The impact of Al(2)O(3) barriers was also studied in devices employing different dyes, with increased active layer thicknesses, and with substrates that did not undergo the TiCl(4) surface treatment. In all instances, electron lifetimes (as determined by transient photovoltage measurements) increased and dark current was suppressed after Al(2)O(3) deposition. However, only when the TiCl(4) treatment was eliminated did device efficiency increase; in all other instances efficiency decreased due to a drop in short-circuit current. These results are attributed in the former case to the similar effects of Al(2)O(3) ALD and the TiCl(4) surface treatment whereas the insulating properties of Al(2)O(3) hinder charge injection and lead to current loss in TiCl(4)-treated devices. The impact of Al(2)O(3) barrier layers was unaffected by doubling the active layer thickness or using an alternative ruthenium dye, but a metal-free donor-π-acceptor dye exhibited a much smaller decrease in current due to its higher excited state energy. We develop a model employing prior research on Al(2)O(3) growth and dye kinetics that successfully predicts the reduction in device current as a function of ALD cycles and is extendable to different dye-barrier systems.

  18. Plasma-assisted atomic layer deposition of Al2O3 and parylene C bi-layer encapsulation for chronic implantable electronics

    NASA Astrophysics Data System (ADS)

    Xie, Xianzong; Rieth, Loren; Merugu, Srinivas; Tathireddy, Prashant; Solzbacher, Florian

    2012-08-01

    Encapsulation of biomedical implants with complex three dimensional geometries is one of the greatest challenges achieving long-term functionality and stability. This report presents an encapsulation scheme that combines Al2O3 by atomic layer deposition with parylene C for implantable electronic systems. The Al2O3-parylene C bi-layer was used to encapsulate interdigitated electrodes, which were tested invitro by soak testing in phosphate buffered saline solution at body temperature (37 °C) and elevated temperatures (57 °C and 67 °C) for accelerated lifetime testing up to 5 months. Leakage current and electrochemical impedance spectroscopy were measured for evaluating the integrity and insulation performance of the coating. Leakage current was stably about 15 pA at 5 V dc, and impedance was constantly about 3.5 MΩ at 1 kHz by using electrochemical impedance spectroscopy for samples under 67 °C about 5 months (approximately equivalent to 40 months at 37 °C). Alumina and parylene coating lasted at least 3 times longer than parylene coated samples tested at 80 °C. The excellent insulation performance of the encapsulation shows its potential usefulness for chronic implants.

  19. Electrical characteristics and conduction mechanisms of amorphous subnanometric Al2O3-TiO2 laminate dielectrics deposited by atomic layer deposition

    NASA Astrophysics Data System (ADS)

    Kahouli, Abdelkader; Lebedev, Oleg; Dao, Vu Hung; Elbahri, Marwa Ben; Prellier, Wilfrid; Lüders, Ulrike

    2016-11-01

    Electric conduction mechanisms of amorphous Al2O3/TiO2 (ATO)-laminates deposited by atomic layer deposition with sub-nanometer individual layer thicknesses were studied in a large temperature range. Two characteristic field regions are identified. In the low field region (E ≤ 0.31 MV/cm), the leakage current is dominated by the trap-assisted tunneling through oxygen vacancies occurring in the TiO2, while in the high electric field region (E > 0.31 MV/cm) the Poole Frenkel (PF) hopping is the appropriate conduction process with energy levels depending on the temperature and the electric field. It is shown that the PF potential levels decrease with the applied ATO field due to the overlapping of the Coulomb potential. Amorphous ATO-laminates show the presence of two intrinsic potential energy levels ϕi, which are 0.18 eV for low temperature region and 0.4 eV at high temperature region. Oxygen vacancies are the main origin of traps, which is consistent with the principal mechanisms for leakage in ATO-laminates.

  20. Electroluminescent layers based on ZnS:Cu deposited into matrices of porous anodic Al2O3

    NASA Astrophysics Data System (ADS)

    Valeev, R. G.; Petukhov, D. I.; Chukavin, A. I.; Bel'tyukov, A. N.

    2016-02-01

    It is suggested to use a new nanocomposite material—nanostructures of copper-doped zinc sulfide in a matrix of porous aluminum oxide—as a light-emitting layer of electroluminescent sources of light. The material was deposited by thermal evaporation in a vacuum. The microstructure of the layers, impurity distribution in the electroluminescent-phosphor layer, and electroluminescence spectra at various copper concentrations in ZnS:Cu were studied.

  1. Electrical hysteresis in p-GaN metal-oxide-semiconductor capacitor with atomic-layer-deposited Al2O3 as gate dielectric

    NASA Astrophysics Data System (ADS)

    Zhang, Kexiong; Liao, Meiyong; Imura, Masataka; Nabatame, Toshihide; Ohi, Akihiko; Sumiya, Masatomo; Koide, Yasuo; Sang, Liwen

    2016-12-01

    The electrical hysteresis in current-voltage (I-V) and capacitance-voltage characteristics was observed in an atomic-layer-deposited Al2O3/p-GaN metal-oxide-semiconductor capacitor (PMOSCAP). The absolute minimum leakage currents of the PMOSCAP for forward and backward I-V scans occurred not at 0 V but at -4.4 and +4.4 V, respectively. A negative flat-band voltage shift of 5.5 V was acquired with a capacitance step from +4.4 to +6.1 V during the forward scan. Mg surface accumulation on p-GaN was demonstrated to induce an Mg-Ga-Al-O oxidized layer with a trap density on the order of 1013 cm-2. The electrical hysteresis is attributed to the hole trapping and detrapping process in the traps of the Mg-Ga-Al-O layer via the Poole-Frenkel mechanism.

  2. Preparation and characterization of super-water-repellent Al2O3 coating films with high transparency

    NASA Astrophysics Data System (ADS)

    Minami, Tsutomu; Katata, Noriko; Tadanaga, Kiyoharu

    1997-10-01

    Alumina thin films with a roughness of 20 to 50 nm were formed by immersing the porous alumina gel films prepared by the sol- gel method in boiling water. When hydrolyzed fluoroalkyltrimethoxysilane was coated on the alumina films, the films showed super-water-repellency and high transparency; the contact angle for water of the film was 165 degrees and the transmittance for visible light was higher than 92%. When the fluoroalkyltrimethoxysilane-coated thin films were heat- treated at temperatures higher than 500 degrees Celsius, the films became super-hydrophilic; the contact angle for water on the films was less than 5 degrees. It was shown the existence of air in the pores on the surface caused the super-water- repellency and that of water in the pores caused the super- hydrophilic property. The transparent, super water-repellent and super-hydrophilic coating films formed on glasses, metals, and ceramics have practical applications such as optical lenses, eye-glasses, cover glasses for solar cells, windshields of automobiles, and so on.

  3. The process of growing Cr2O3 thin films on α-Al2O3 substrates at low temperature by r.f. magnetron sputtering

    NASA Astrophysics Data System (ADS)

    Gao, Yin; Leiste, Harald; Stueber, Michael; Ulrich, Sven

    2017-01-01

    Cr2O3 thin films with a thickness of 180 nm are grown on c-plane α-Al2O3 (0001) single crystal substrates at a substrate temperature of 320 °C by non-reactive radio frequency magnetron sputtering. Phase formation and composition are characterized by X-ray diffraction (XRD) and Raman spectroscopy analysis. Additional information such as in-plane and out-of-plane lattice parameters, strain relaxation and texture are obtained by reciprocal space mappings (RSMs) and pole figure measurements. Transmission electron microscopy (TEM) has been carried out in order to study the microstructure and further confirm the orientation and epitaxial relationship between films and substrates.

  4. Atomic layer deposition of Al2O3 on H-passivated Si. I. Initial surface reaction pathways with H/Si(100)-2×1

    NASA Astrophysics Data System (ADS)

    Halls, Mathew D.; Raghavachari, Krishnan

    2003-06-01

    Aluminum oxide (Al2O3) grown by atomic layer deposition (ALD) is currently under investigation for use as a high-κ gate dielectric alternative to SiO2. Cluster calculations employing hybrid density functional theory have been carried out to examine the chemical reaction pathways between the ALD precursors, trimethylaluminum (TMA) and H2O, with the H/Si(100)-2×1 surface. Results obtained using Si9H14 and Si15H20, dimer and double dimer clusters to represent the surface active site are in good agreement, providing a consistent view of reaction energetics on the H/Si(100)-2×1 surface. The adsorption energies for TMA and H2O on the surface are calculated to be 0.02 and 0.15 eV, respectively. For the reaction between H2O and the H/Si(100)-2×1 surface, hydroxylation of the surface accompanied by loss of H2 was found to be the preferred pathway having an activation energy and overall reaction enthalpy of 1.60 eV and -0.75 eV, both of which are ⩾0.70 eV lower than the corresponding values for the possible H/D exchange reaction. TMA exposure of the H/Si(100)-2×1 surface favors the deposition of -Al(CH3)2 with loss of CH4, having a barrier height of 1.30 eV and reaction enthalpy of -0.31 eV, which are 0.10 and 0.40 eV lower than the surface methylation pathway (H/CH3 exchange) and 2.64 and 0.45 eV lower in energy than the H2 loss reaction, that results in the deposition of -CH2-Al(CH3)2 to the surface. Therefore, the dominant reactions identified in this work are those with direct implication in the Al2O3 ALD growth mechanism, leading to the formation of Si-O and Si-Al species on the H/Si(100)-2×1 surface.

  5. Vanadium oxides on aluminum oxide supports. 1. Surface termination and reducibility of vanadia films on alpha-Al2O3(0001).

    PubMed

    Todorova, Tanya K; Ganduglia-Pirovano, M Veronica; Sauer, Joachim

    2005-12-15

    Using density functional theory and statistical thermodynamics, we obtained the phase diagram of thin VnOm films of varying thickness (approximately 2-6 A, 1-6 vanadium layers) supported on alpha-Al2O3(0001). Depending on the temperature, oxygen pressure, and vanadium concentration, films with different thickness and termination may form. In ultrahigh vacuum (UHV), at room temperature and for low vanadium concentrations, an ultrathin (1 x 1) O=V-terminated film is most stable. As more vanadium is supplied, the thickest possible films form. Their structures and terminations correspond to previous findings for the (0001) surface of bulk V2O3 [Kresse et al., Surf. Sci. 2004, 555, 118]. The presence of surface vanadyl (O=V) groups is a prevalent feature. They are stable up to at least 800 K in UHV. Vanadyl oxygen atoms induce a V(2p) core-level shift of about 2 eV on the surface V atoms. The reducibility of the supported films is characterized by the energy of oxygen defect formation. For the stable structures, the results vary between 4.11 and 3.59 eV per 1/2O2. In contrast, oxygen removal from the V2O5(001) surface is much easier (1.93 eV). This provides a possible explanation for the lower catalytic activity of vanadium oxides supported on alumina compared to that of crystalline vanadia particles.

  6. The behavior of ZrO2/20%Y2O3 and Al2O3 coatings deposited on aluminum alloys at high temperature regime

    NASA Astrophysics Data System (ADS)

    Pintilei, G. L.; Crismaru, V. I.; Abrudeanu, M.; Munteanu, C.; Baciu, E. R.; Istrate, B.; Basescu, N.

    2015-10-01

    Aluminum alloy present numerous advantages like lightness, high specific strength and diversity which recommend them to a high number of applications from different fields. In extreme environments the protection of aluminum alloys is difficult and requires a high number of requirements like high temperature resistance, thermal fatigue resistance, corrosion fatigue resistance and galvanic corrosion resistance. To obtain these characteristics coatings can be applied to the surfaces so they can enhance the mechanical and chemical properties of the parts. In this paper two coatings were considered for deposition on an AA2024 aluminum alloy, ZrO2/20%Y2O3 and Al2O3. To obtain a better adherence of the coating to the base material an additional bond layer of NiCr is used. Both the coatings and bond layer were deposited by atmospheric plasma spraying on the samples. The samples were subjected to a temperature of 500 °C and after that slowly cooled to room temperature. The samples were analyzed by electron microscopy and X-ray diffraction to determine the morphological and phase changes that occurred during the temperature exposure. To determine the stress level in the parts due to thermal expansion a finite element analysis was performed in the same conditions as the tests.

  7. Temperature dependence of the dielectric response of anodized Al-Al2O3-metal capacitors

    NASA Astrophysics Data System (ADS)

    Hickmott, T. W.

    2003-03-01

    The temperature dependence of capacitance, CM, and conductance, GM, of Al-Al2O3-metal capacitors with Cu, Ag, and Au electrodes has been measured between 100 and 340 K at seven frequencies between 10 kHz and 1 MHz. Al2O3 films between 15 and 64 nm thick were formed by anodizing evaporated Al films in borate-glycol or borate-H2O electrolyte. The interface capacitance at the Al2O3-metal interface, CI, which is in series with the capacitance CD due to the Al2O3 dielectric, is determined from plots of 1/CM versus insulator thickness. CI is not fixed for a given metal-insulator interface but depends on the vacuum system used to deposit the metal electrode. CI is nearly temperature independent. When CI is taken into account the dielectric constant of Al2O3 determined from capacitance measurements is ˜8.3 at 295 K. The dielectric constant does not depend on anodizing electrolyte, insulator thickness, metal electrode, deposition conditions for the metal electrode or measurement frequency. By contrast, GM of Al-Al2O3-metal capacitors depends on both the deposition conditions of the metal and on the metal. For Al-Al2O3-Cu capacitors, GM is larger for capacitors with large values of 1/CI that result when Cu is evaporated in an oil-pumped vacuum system. For Al-Al2O3-Ag capacitors, GM does not depend on the Ag deposition conditions.

  8. Assembly of self-assembled monolayer-coated Al2O3 on TiO2 thin films for the fabrication of renewable superhydrophobic-superhydrophilic structures.

    PubMed

    Nishimoto, Shunsuke; Sekine, Hitomi; Zhang, Xintong; Liu, Zhaoyue; Nakata, Kazuya; Murakami, Taketoshi; Koide, Yoshihiro; Fujishima, Akira

    2009-07-07

    A renewable superhydrophobic-superhydrophilic pattern with a minimum dimension of 50 microm is prepared from octadecyltrimethoxysilane self-assembled monolayer-covered superhydrophobic Al2O3 overlayers on a superhydrophilic TiO2 surface via self-assembly and calcination of boehmite (AlOOH.nH2O) particles. The resulting Al2O3 layer plays dual roles as a superhydrophobic layer and as a UV-blocking layer for the underlying TiO2.

  9. Millimeter distance effects of surface plasmon polaritons in electroformed Al-Al2O3-Ag diodes

    NASA Astrophysics Data System (ADS)

    Hickmott, T. W.

    2017-02-01

    Electroforming of metal-insulator-metal diodes is a soft dielectric breakdown that changes the high resistance of as-prepared diodes to a low resistance state. Electroforming of Al-Al2O3-metal diodes with anodic Al2O3 results in voltage-controlled negative resistance in the current-voltage (I-V) characteristics, electroluminescence (EL), and electron emission into vacuum (EM). EL is due to electrons injected at the Al-Al2O3 interface combining with radiative defects in Al2O3. Surface plasmon polaritons (SPPs) are electromagnetic waves that can be excited by photons or electrons. SPPs are confined to a metal-dielectric interface, cause large electric fields in the metal and dielectric, and have ranges of micrometers. The temperature dependence of I-V curves, EL, and EM of a group of electroformed Al-Al2O3-Ag diodes with Al2O3 thicknesses between 12 nm and 20 nm, group A, was measured between 200 K and 300 K. After a sequence of temperature measurements, the Al-Al2O3-Ag diodes, the Al-Al2O3 regions between diodes, and portions of the Ag on the glass region that provides contacts to the diodes are darkened. The range of darkening is >7 mm in a diode with 12 nm of Al2O3 and 2.0-3.5 mm in diodes with Al2O3 thicknesses between 14 nm and 20 nm. Darkening is attributed to the occurrence of SPPs generated by EL photons at the Ag-Al2O3 and Al-Al2O3 interfaces. The results are compared to a second group of Al-Al2O3-Ag diodes with identical Al2O3 thicknesses, group B, that were prepared in the same way as the diodes of group A except for a difference in the deposition of Al films for the two groups. Al-Al2O3-Ag diodes of group B exhibit enhanced EL, which is attributed to spontaneous emission of recombination centers in Al2O3 being enhanced by large electromagnetic fields that are due to SPPs that are generated by EL photons.

  10. Photoluminescence of Ga-doped ZnO film grown on c-Al2O3 (0001) by plasma-assisted molecular beam epitaxy

    NASA Astrophysics Data System (ADS)

    Park, H. C.; Byun, D.; Angadi, B.; Hee Park, D.; Choi, W. K.; Choi, J. W.; Jung, Y. S.

    2007-10-01

    High quality gallium doped ZnO (Ga:ZnO) thin films were grown on c-Al2O3(1000) by plasma-assisted molecular beam epitaxy, and Ga concentration NGa was controlled in the range of 1×1018-2.5×1020/cm3 by adjusting/changing the Ga cell temperature. From the low-temperature photoluminescence at 10K, the donor bound exciton I8 related to Ga impurity was clearly observed and confirmed by comparing the calculated activation energy of 16.8meV of the emission peak intensity with the known localization energy, 16.1meV. Observed asymmetric broadening with a long tail on the lower energy side in the photoluminescence (PL) emission line shape could be fitted by the Stark effect and the compensation ratio was approximately 14-17% at NGa⩾1×1020/cm3. The measured broadening of photoluminescence PL emission is in good agreement with the total thermal broadening and potential fluctuations caused by random distribution of impurity at NGa lower than the Mott critical density.

  11. Al2O3 e-Beam Evaporated onto Silicon (100)/SiO2, by XPS

    SciTech Connect

    Madaan, Nitesh; Kanyal, Supriya S.; Jensen, David S.; Vail, Michael A.; Dadson, Andrew; Engelhard, Mark H.; Samha, Hussein; Linford, Matthew R.

    2013-09-25

    We report the XPS characterization of a thin film of Al2O3 (35 nm) deposited via e-beam evaporation onto silicon (100). The film was characterized with monochromatic Al Ka radiation. An XPS survey scan, an Al 2p narrow scan, and the valence band spectrum were collected. The Al2O3 thin film is used as a diffusion barrier layer for templated carbon nanotube (CNT) growth in the preparation of microfabricated thin layer chromatography plates.

  12. Optical properties of the Al2O3/SiO2 and Al2O3/HfO2/SiO2 antireflective coatings

    NASA Astrophysics Data System (ADS)

    Marszałek, Konstanty; Winkowski, Paweł; Jaglarz, Janusz

    2014-01-01

    Investigations of bilayer and trilayer Al2O3/SiO2 and Al2O3/HfO2/SiO2 antireflective coatings are presented in this paper. The oxide films were deposited on a heated quartz glass by e-gun evaporation in a vacuum of 5 × 10-3 [Pa] in the presence of oxygen. Depositions were performed at three different temperatures of the substrates: 100 °C, 200 °C and 300 °C. The coatings were deposited onto optical quartz glass (Corning HPFS). The thickness and deposition rate were controlled with Inficon XTC/2 thickness measuring system. Deposition rate was equal to 0.6 nm/s for Al2O3, 0.6 nm - 0.8 nm/s for HfO2 and 0.6 nm/s for SiO2. Simulations leading to optimization of the thin film thickness and the experimental results of optical measurements, which were carried out during and after the deposition process, have been presented. The optical thickness values, obtained from the measurements performed during the deposition process were as follows: 78 nm/78 nm for Al2O3/SiO2 and 78 nm/156 nm/78 nm for Al2O3/HfO2/SiO2. The results were then checked by ellipsometric technique. Reflectance of the films depended on the substrate temperature during the deposition process. Starting from 240 nm to the beginning of visible region, the average reflectance of the trilayer system was below 1 % and for the bilayer, minima of the reflectance were equal to 1.6 %, 1.15 % and 0.8 % for deposition temperatures of 100 °C, 200 °C and 300 °C, respectively.

  13. Partial Melt Processing of Solid-Solution Bi2Sr2CaCu2O8+delta Thick-Film Conductors with Nanophase Al2O3 Additions

    DTIC Science & Technology

    2006-04-01

    range of partial-melt temperatures. Results were compared to Al2O3-free films with compositions lying within the single-phase solid - solution 2212 region...Nanophase Al2O3 reacted with 2212-type precursors to form a composite of micron size or smaller particles of solid - solution (Sr,Ca)3Al2O6 in a solid ... solution 2212 superconducting matrix. The Ca content of the (Sr,Ca)3Al2O6 in a solid - solution 2212 superconducting matrix. The Ca content of the (Sr,Ca

  14. Electrochemical synthesis of polypyrrole-Al2O3 composite coating on 316 stainless steel for corrosion protection

    NASA Astrophysics Data System (ADS)

    Yan, Qun; Li, Chuanxian; Huang, Tingting; Yang, Fei

    2017-03-01

    Polypyrrole (PPy)-Al2O3 composite coating was electrochemically deposited on 316 stainless steel (316 SS) by cyclic voltammetry technique. Scanning electron microscopy (SEM) and Fourier transform infrared spectroscopy (FT-IR) were employed to understand the morphology and composition of the PPy-Al2O3 coated SS. The corrosion protection ability of the PPy-Al2O3 coating was studied using open circuit potential (Eocp)-time measurements, polarization curves, and electrochemical impedance spectroscopy (EIS) after the electrodes had been immersed in a 3.5 wt% NaCl solution as the corrosive media. The results showed that PPy-Al2O3 composite coatings have a homogeneous and smooth surface without detectable cracks. Anodic polarization analysis revealed that the hybrid films provided an exceptional barrier and corrosion protection in comparison with PPy coating. The EIS studies indicated that the charge transfer resistance increases with the presence of PPy-Al2O3. PPy-Al2O3 composite coating provides better corrosion protection and can be considered as a coating material to protect 316SS. With increase in Al2O3/Py mole ratio, PPy-Al2O3 coatings tend to exhibit a better corrosion resistance ability.

  15. Electrical properties of GaAs metal-oxide-semiconductor structure comprising Al2O3 gate oxide and AlN passivation layer fabricated in situ using a metal-organic vapor deposition/atomic layer deposition hybrid system

    NASA Astrophysics Data System (ADS)

    Aoki, Takeshi; Fukuhara, Noboru; Osada, Takenori; Sazawa, Hiroyuki; Hata, Masahiko; Inoue, Takayuki

    2015-08-01

    This paper presents a compressive study on the fabrication and optimization of GaAs metal-oxide-semiconductor (MOS) structures comprising a Al2O3 gate oxide, deposited via atomic layer deposition (ALD), with an AlN interfacial passivation layer prepared in situ via metal-organic chemical vapor deposition (MOCVD). The established protocol afforded self-limiting growth of Al2O3 in the atmospheric MOCVD reactor. Consequently, this enabled successive growth of MOCVD-formed AlN and ALD-formed Al2O3 layers on the GaAs substrate. The effects of AlN thickness, post-deposition anneal (PDA) conditions, and crystal orientation of the GaAs substrate on the electrical properties of the resulting MOS capacitors were investigated. Thin AlN passivation layers afforded incorporation of optimum amounts of nitrogen, leading to good capacitance-voltage (C-V) characteristics with reduced frequency dispersion. In contrast, excessively thick AlN passivation layers degraded the interface, thereby increasing the interfacial density of states (Dit) near the midgap and reducing the conduction band offset. To further improve the interface with the thin AlN passivation layers, the PDA conditions were optimized. Using wet nitrogen at 600 °C was effective to reduce Dit to below 2 × 1012 cm-2 eV-1. Using a (111)A substrate was also effective in reducing the frequency dispersion of accumulation capacitance, thus suggesting the suppression of traps in GaAs located near the dielectric/GaAs interface. The current findings suggest that using an atmosphere ALD process with in situ AlN passivation using the current MOCVD system could be an efficient solution to improving GaAs MOS interfaces.

  16. Epitaxial growth and electrochemical transfer of graphene on Ir(111)/α-Al2O3(0001) substrates

    NASA Astrophysics Data System (ADS)

    Koh, Shinji; Saito, Yuta; Kodama, Hideyuki; Sawabe, Atsuhito

    2016-07-01

    Low-pressure chemical vapor deposition growth of graphene on Iridium (Ir) layers epitaxially deposited on α-Al2O3 (0001) substrates was investigated. The X-ray diffraction, Raman and reflection high energy electron diffraction characterizations revealed that graphene films were epitaxially grown on Ir(111) layers, and the in-plane epitaxial relationship between graphene, Ir(111), and α-Al2O3(0001) was graphene ⟨ 1 1 ¯ 00 ⟩//Ir⟨ 11 2 ¯ ⟩//α-Al2O3⟨ 11 2 ¯ 0 ⟩. The graphene on Ir(111) was electrochemically transferred onto SiO2/Si substrates. We also demonstrated the reuse of the Ir(111)/α-Al2O3(0001) substrates in multiple growth and transfer cycles.

  17. Data of ALD Al2O3 rear surface passivation, Al2O3 PERC cell performance, and cell efficiency loss mechanisms of Al2O3 PERC cell.

    PubMed

    Huang, Haibing; Lv, Jun; Bao, Yameng; Xuan, Rongwei; Sun, Shenghua; Sneck, Sami; Li, Shuo; Modanese, Chiara; Savin, Hele; Wang, Aihua; Zhao, Jianhua

    2017-04-01

    This data article is related to the recently published article '20.8% industrial PERC solar cell: ALD Al2O3 rear surface passivation, efficiency loss mechanisms analysis and roadmap to 24%' (Huang et al., 2017) [1]. This paper is about passivated emitter and rear cell (PERC) structures and it describes the quality of the Al2O3 rear-surface passivation layer deposited by atomic layer deposition (ALD), in relation to the processing parameters (e.g. pre-clean treatment, deposition temperature, growth per cycle, and film thickness) and to the cell efficiency loss mechanisms. This dataset is made public in order to contribute to the limited available public data on industrial PERC cells, to be used by other researchers.

  18. Comparison of HfAlO, HfO2/Al2O3, and HfO2 on n-type GaAs using atomic layer deposition

    NASA Astrophysics Data System (ADS)

    Lu, Bin; Lv, Hongliang; Zhang, Yuming; Zhang, Yimen; Liu, Chen

    2016-11-01

    Different high-permittivity (high-k) gate dielectric structures of HfO2, HfAlO, and HfO2/Al2O3 deposited on HF-etched n-GaAs using ALD have been investigated. It has been demonstrated that the stacked structure of HfO2/Al2O3 has the lowest interface state density of 8.12 × 1012eV-1 cm-2 due to the "self-cleaning" reaction process, but the sample of HfAlO shows much better frequency dispersion and much higher dielectric permittivity extracted from the C-V curves. The investigation reveals that the electrical properties of gate dielectrics are improved by introducing alumina into HfO2.

  19. Effect of annealing processes on the electrical properties of the atomic layer deposition Al2O3/In0.53Ga0.47As metal oxide semiconductor capacitors

    NASA Astrophysics Data System (ADS)

    Luc, Quang-Ho; Chang, Edward Yi; Trinh, Hai-Dang; Nguyen, Hong-Quan; Tran, Binh-Tinh; Lin, Yueh-Chin

    2014-01-01

    The influence of different annealing processes including post deposition annealing (PDA) and post metallization annealing (PMA) with various temperatures (250-400 °C) and ambient [N2 and forming gas (FG)] on the electrical characteristics of Pt/Al2O3/In0.53Ga0.47As MOSCAPs are systemically studied. Comparing to samples underwent high PDA temperature, the higher leakage current has been observed for all of samples underwent high PMA temperature. This has resulted in the degradation of capacitance-voltage (C-V) behaviors. In conjunction with the current-voltage (J-V) measurement, depth profiling Auger electron spectroscopy (AES) and high-resolution transmission electron microscopy (HRTEM) analyses evidence that the out-diffusion of metal into oxide layer is the main source of leakage current. The noticeable passivation effect on the Al2O3/InGaAs interface has also been confirmed by the samples that underwent PDA process.

  20. Comparative study of atomic-layer-deposited HfO2/Al2O3, Hf0.8Al0.2Ox and Hf0.5Al0.5Ox on N-GaAs

    NASA Astrophysics Data System (ADS)

    Yu, Xinjiang; Lv, Hongliang; Zhang, Yuming; Zhang, Yimen; Qin, Zaiyang

    2016-11-01

    Interfacial properties of n-GaAs metal-oxide-semiconductor (MOSCAPs) with the gate dielectrics of HfO2/Al2O3, Hf0.8Al0.2Ox and Hf0.5Al0.5Ox are investigated. The results reveal that Hf0.5Al0.5Ox has larger permittivity and lower interface trap density than that of HfO2/Al2O3. In order to explain the result from the physical perspective, the XPS tests of all three samples are performed. It is found that the main reason to form interface trap of three samples treated with 500 °C post-deposition annealing, is attributed to the interfacial component of Ga2O3 and The Hf0.5Al0.5Ox dielectric is beneficial to reducing the formation of Ga2O3.

  1. Enhanced Performance of GaN-Based Light-Emitting Diodes by Using Al Mirror and Atomic Layer Deposition-TiO2/Al2O3 Distributed Bragg Reflector Backside Reflector with Patterned Sapphire Substrate

    NASA Astrophysics Data System (ADS)

    Chen, Hongjun; Guo, Hao; Zhang, Peiyuan; Zhang, Xiong; Liu, Honggang; Wang, Shengkai; Cui, Yiping

    2013-02-01

    GaN-based light-emitting diodes (LEDs) coated with an Al mirror and a three-pair TiO2/Al2O3 distributed Bragg reflector (DBR) by atomic layer deposition (ALD) grown on a patterned sapphire substrate (PSS) were proposed and realized for the first time. A 43.1% enhancement in light output power (LOP) was realized at 60 mA with the LED coated with an Al mirror and a three-pair ALD-grown TiO2/Al2O3 DBR compared with the LED without a backside reflector, as well as a 10.7% enhancement compared with the LED with a conventional Al mirror and a three-pair TiO2/SiO2 DBR reflector.

  2. Rapid fabrication of Al2O3 encapsulations for organic electronic devices

    NASA Astrophysics Data System (ADS)

    Ali, Kamran; Ali, Junaid; Mehdi, Syed Murtuza; Choi, Kyung-Hyun; An, Young Jin

    2015-10-01

    Organic electronics have earned great reputation in electronic industry yet they suffer technical challenges such as short lifetimes and low reliability because of their susceptibility to water vapor and oxygen which causes their fast degradation. This paper report on the rapid fabrication of Al2O3 encapsulations through a unique roll-to-roll atmospheric atomic layer deposition technology (R2R-AALD) for the life time enhancement of organic poly (4-vinylphenol) (PVP) memristor devices. The devices were then categorized into two sets. One was processed with R2R-AALD Al2O3 encapsulations at 50 °C and the other one was kept as un-encapsulated. The field-emission scanning electron microscopy (FESEM) results revealed that pin holes and other irregularities in PVP films with average arithmetic roughness (Ra) of 9.66 nm have been effectively covered by Al2O3 encapsulation having Ra of 0.92 nm. The X-ray photoelectron spectroscopy XPS spectrum for PVP film showed peaks of C 1s and O 1s at the binding energies of 285 eV and 531 eV, respectively. The respective appearance of Al 2p, Al 2s, and O 1s peaks at the binding energies of 74 eV, 119 eV, and 531 eV, confirms the fabrication of Al2O3 films. Electrical current-voltage (I-V) measurements confirmed that the Al2O3 encapsulation has a huge influence on the performance, robustness and life time of memristor devices. The Al2O3 encapsulated memristor performed with superior stability for four weeks whereas the un-encapsulated devices could only last for one week. The performance of encapsulated device had been promising after being subjected to bending test for 100 cycles and the variations in its stability were of minor concern confirming the mechanical robustness and flexibility of the devices.

  3. Atomic Layer Deposition of Al2O3-Ga2O3 Alloy Coatings for Li[Ni0.5Mn0.3Co0.2]O2 Cathode to Improve Rate Performance in Li-Ion Battery.

    PubMed

    Laskar, Masihhur R; Jackson, David H K; Guan, Yingxin; Xu, Shenzhen; Fang, Shuyu; Dreibelbis, Mark; Mahanthappa, Mahesh K; Morgan, Dane; Hamers, Robert J; Kuech, Thomas F

    2016-04-27

    Metal oxide coatings can improve the electrochemical stability of cathodes and hence, their cycle-life in rechargeable batteries. However, such coatings often impose an additional electrical and ionic transport resistance to cathode surfaces leading to poor charge-discharge capacity at high C-rates. Here, a mixed oxide (Al2O3)1-x(Ga2O3)x alloy coating, prepared via atomic layer deposition (ALD), on Li[Ni0.5Mn0.3Co0.2]O2 (NMC) cathodes is developed that has increased electron conductivity and demonstrated an improved rate performance in comparison to uncoated NMC. A "co-pulsing" ALD technique was used which allows intimate and controlled ternary mixing of deposited film to obtain nanometer-thick mixed oxide coatings. Co-pulsing allows for independent control over film composition and thickness in contrast to separate sequential pulsing of the metal sources. (Al2O3)1-x(Ga2O3)x alloy coatings were demonstrated to improve the cycle life of the battery. Cycle tests show that increasing Al-content in alloy coatings increases capacity retention; whereas a mixture of compositions near (Al2O3)0.5(Ga2O3)0.5 was found to produce the optimal rate performance.

  4. Influence of annealing in H atmosphere on the electrical properties of Al2O3 layers grown on p-type Si by the atomic layer deposition technique

    NASA Astrophysics Data System (ADS)

    Kolkovsky, Vl.; Stübner, R.; Langa, S.; Wende, U.; Kaiser, B.; Conrad, H.; Schenk, H.

    2016-09-01

    In the present study the electrical properties of 100 nm and 400 nm alumina films grown by the atomic layer deposition technique on p-type Si before and after a post-deposition annealing at 440 °C and after a dc H plasma treatment at different temperatures are investigated. We show that the density of interface states is below 2 × 1010 cm-2 in these samples and this value is significantly lower compared to that reported previously in thinner alumina layers (below 50 nm). The effective minority carrier lifetime τg,eff and the effective surface recombination velocity seff in untreated p-type Si samples with 100 nm and 400 nm aluminum oxide is comparable with those obtained after thermal oxidation of 90 nm SiO2. Both, a post-deposition annealing in forming gas (nitrogen/hydrogen) at elevated temperatures and a dc H-plasma treatment at temperatures close to room temperature lead to the introduction of negatively charged defects in alumina films. The results obtained in samples annealed in different atmospheres at different temperatures or subjected to a dc H plasma treatment allow us to correlate these centers with H-related defects. By comparing with theory we tentatively assign them to negatively charged interstitial H atoms.

  5. What determines the interfacial configuration of Nb/Al2O3 and Nb/MgO interface

    PubMed Central

    Du, J. L.; Fang, Y.; Fu, E. G.; Ding, X.; Yu, K. Y.; Wang, Y. G.; Wang, Y. Q.; Baldwin, J. K.; Wang, P. P.; Bai, Q.

    2016-01-01

    Nb films are deposited on single crystal Al2O3 (110) and MgO(111) substrates by e-beam evaporation technique. Structure of Nb films and orientation relationships (ORs) of Nb/Al2O3 and Nb/MgO interface are studied and compared by the combination of experiments and simulations. The experiments show that the Nb films obtain strong (110) texture, and the Nb film on Al2O3(110) substrate shows a higher crystalline quality than that on MgO(111) substrate. First principle calculations show that both the lattice mismatch and the strength of interface bonding play major roles in determining the crystalline perfection of Nb films and ORs between Nb films and single crystal ceramic substrates. The fundamental mechanisms for forming the interfacial configuration in terms of the lattice mismatch and the strength of interface bonding are discussed. PMID:27698458

  6. Microstructural characteristics of tin oxide-based thin films on (0001) Al2O3 substrates: effects of substrate temperature and RF power during co-sputtering.

    PubMed

    Hwang, Sooyeon; Lee, Ju Ho; Kim, Young Yi; Yun, Myeong Goo; Lee, Kwan-Hun; Lee, Jeong Yong; Cho, Hyung Koun

    2014-12-01

    While tin oxides such as SnO and SnO2 are widely used in various applications, surprisingly, only a limited number of reports have been presented on the microstructural characteristics of tin oxide thin films grown under various growth conditions. In this paper, the effects of the substrate temperature and content of foreign Zn ion on the microstructural characteristics of tin oxide thin films grown by radio-frequency magnetron sputtering were investigated. The increase in substrate temperature induced change in the stoichiometry of the thin films from SnO(1+x) to SnO(2-x). Additionally, the phase contrast in the transmission electron microscopy image revealed that SnO(1+x) and SnO(2-x) phases were alternating in thin films and the width of each phase became narrower at high substrate temperature. The ternary zinc tin oxide thin films were deposited using the co-sputtering method. As the ZnO target power increased, the crystallinity of the thin films became poly-crystalline, and then showed improved crystallinity again with two types of phases.

  7. SELF ALIGNED TIP DEINSULATION OF ATOMIC LAYER DEPOSITED AL2O3 AND PARYLENE C COATED UTAH ELECTRODE ARRAY BASED NEURAL INTERFACES

    PubMed Central

    Xie, Xianzong; Rieth, Loren; Negi, Sandeep; Bhandari, Rajmohan; Caldwell, Ryan; Sharma, Rohit; Tathireddy, Prashant; Solzbacher, Florian

    2014-01-01

    The recently developed alumina and Parylene C bi-layer encapsulation improved the lifetime of neural interfaces. Tip deinsulation of Utah electrode array based neural interfaces is challenging due to the complex 3D geometries and high aspect ratios of the devices. A three-step self-aligned process was developed for tip deinsulation of bilayer encapsulated arrays. The deinsulation process utilizes laser ablation to remove Parylene C, O2 reactive ion etching to remove carbon and Parylene residues, and buffered oxide etch to remove alumina deposited by atomic layer deposition, and expose the IrOx tip metallization. The deinsulated iridium oxide area was characterized by scanning electron microscopy, atomic force microscopy, X-ray photoelectron spectroscopy, and electrochemical impedance spectroscopy to determine the morphology, surface morphology, composition, and electrical properties of the deposited layers and deinsulated tips. The alumina layer was found to prevent the formation of micro cracks on iridium oxide during the laser ablation process, which has been previously reported as a challenge for laser deinsulation of Parylene films. The charge injection capacity, charge storage capacity, and impedance of deinsulated iridium oxide were characterized to determine the deinsulation efficacy compared to Parylene-only insulation. Deinsulated iridium oxide with bilayer encapsulation had higher charge injection capacity (240 vs 320 nC) and similar electrochemical impedance (2.5 vs 2.5 kΩ) compared to deinsulated iridium oxide with only Parylene coating for an area of 2 × 10−4 cm2. Tip impedances were in the ranges of 20 to 50 kΩ, with median of 32 KΩ and standard deviation of 30 kΩ, showing the effectiveness of the self-aligned deinsulation process for alumina and Parylene C bi-layer encapsulation. The relatively uniform tip impedance values demonstrated the consistency of tip exposures. PMID:24771981

  8. Self-aligned tip deinsulation of atomic layer deposited Al2O3 and parylene C coated Utah electrode array based neural interfaces

    NASA Astrophysics Data System (ADS)

    Xie, Xianzong; Rieth, Loren; Negi, Sandeep; Bhandari, Rajmohan; Caldwell, Ryan; Sharma, Rohit; Tathireddy, Prashant; Solzbacher, Florian

    2014-03-01

    The recently developed alumina and parylene C bilayer encapsulation improved the lifetime of neural interfaces. Tip deinsulation of Utah electrode array based neural interfaces is challenging due to the complex 3D geometries and high aspect ratios of the devices. A three-step self-aligned process was developed for tip deinsulation of bilayer encapsulated arrays. The deinsulation process utilizes laser ablation to remove parylene C, O2 reactive ion etching to remove carbon and parylene residues, and buffered oxide etch to remove alumina deposited by atomic layer deposition, and expose the IrOx tip metallization. The deinsulated iridium oxide area was characterized by scanning electron microscopy, atomic force microscopy, x-ray photoelectron spectroscopy, and electrochemical impedance spectroscopy to determine the morphology, surface morphology, composition, and electrical properties of the deposited layers and deinsulated tips. The alumina layer was found to prevent the formation of micro cracks on iridium oxide during the laser ablation process, which has been previously reported as a challenge for laser deinsulation of parylene films. The charge injection capacity, charge storage capacity, and impedance of deinsulated iridium oxide were characterized to determine the deinsulation efficacy compared to parylene-only insulation. Deinsulated iridium oxide with bilayer encapsulation had higher charge injection capacity (240 versus 320 nC) and similar electrochemical impedance (2.5 versus 2.5 kΩ) compared to deinsulated iridium oxide with only parylene coating for an area of 2 × 10-4 cm2. Tip impedances were in the range of 20-50 kΩ, with a median of 32 kΩ and a standard deviation of 30 kΩ, showing the effectiveness of the self-aligned deinsulation process for alumina and parylene C bilayer encapsulation. The relatively uniform tip impedance values demonstrated the consistency of tip exposures.

  9. Influence of the Al2O3 partial-monolayer number on the crystallization mechanism of TiO2 in ALD TiO2/Al2O3 nanolaminates and its impact on the material properties

    NASA Astrophysics Data System (ADS)

    Testoni, G. E.; Chiappim, W.; Pessoa, R. S.; Fraga, M. A.; Miyakawa, W.; Sakane, K. K.; Galvão, N. K. A. M.; Vieira, L.; Maciel, H. S.

    2016-09-01

    TiO2/Al2O3 nanolaminates are being investigated to obtain unique materials with chemical, physical, optical, electrical and mechanical properties for a broad range of applications that include electronic and energy storage devices. Here, we discuss the properties of TiO2/Al2O3 nanolaminate structures constructed on silicon (1 0 0) and glass substrates using atomic layer deposition (ALD) by alternatively depositing a TiO2 sublayer and Al2O3 partial-monolayer using TTIP-H2O and TMA-H2O precursors, respectively. The Al2O3 is formed by a single TMA-H2O cycle, so it is a partial-monolayer because of steric hindrance of the precursors, while the TiO2 sublayer is formed by several TTIP-H2O cycles. Overall, each nanolaminate incorporates a certain number of Al2O3 partial-monolayers with this number varying from 10-90 in the TiO2/Al2O3 nanolaminate grown during 2700 total reaction cycles of TiO2 at a temperature of 250 °C. The fundamental properties of the TiO2/Al2O3 nanolaminates, namely film thickness, chemical composition, microstructure and morphology were examined in order to better understand the influence of the number of Al2O3 partial-monolayers on the crystallization mechanism of TiO2. In addition, some optical, electrical and mechanical properties were determined and correlated with fundamental characteristics. The results show clearly the effect of Al2O3 partial-monolayers as an internal barrier, which promotes structural inhomogeneity in the film and influences the fundamental properties of the nanolaminate. These properties are correlated with gas phase analysis that evidenced the poisoning effect of trimethylaluminum (TMA) pulse during the TiO2 layer growth, perturbing the growth per cycle and consequently the overall film thickness. It was shown that the changes in the fundamental properties of TiO2/Al2O3 nanolaminates had little influence on optical properties such as band gap and transmittance. However, in contrast, electrical properties as resistivity

  10. Effect of interface on epitaxy and magnetism in h-RFeO3/Fe3O4/Al2O3 films (R  =  Lu, Yb).

    PubMed

    Zhang, Xiaozhe; Yin, Yuewei; Yang, Sen; Yang, Zhimao; Xu, Xiaoshan

    2017-04-26

    We have carried out the growth of h-RFeO3 (0 0 1) (R  =  Lu, Yb) thin films on Fe3O4 (1 1 1)/Al2O3 (0 0 1) substrates, and studied the effect of the h-RFeO3 (0 0 1)/Fe3O4 (1 1 1) interfaces on the epitaxy and magnetism. The observed epitaxial relations between h-RFeO3 and Fe3O4 indicate an unusual matching of Fe sub-lattices rather than a matching of O sub-lattices. The out-of-plane direction was found to be the easy magnetic axis for h-YbFeO3 (0 0 1) but the hard axis for Fe3O4 (1 1 1) in the h-YbFeO3 (0 0 1)/Fe3O4 (1 1 1)/Al2O3 (0 0 1) films, suggesting a perpendicular magnetic alignment at the h-YbFeO3 (0 0 1)/Fe3O4 (1 1 1) interface. These results indicate that Fe3O4 (1 1 1)/Al2O3 (0 0 1) could be a promising substrate for epitaxial growth of h-RFeO3 films of well-defined interface and for exploiting their spintronic properties.

  11. Effect of interface on epitaxy and magnetism in h-RFeO3/Fe3O4/Al2O3 films (R  =  Lu, Yb)

    NASA Astrophysics Data System (ADS)

    Zhang, Xiaozhe; Yin, Yuewei; Yang, Sen; Yang, Zhimao; Xu, Xiaoshan

    2017-04-01

    We have carried out the growth of h-RFeO3 (0 0 1) (R  =  Lu, Yb) thin films on Fe3O4 (1 1 1)/Al2O3 (0 0 1) substrates, and studied the effect of the h-RFeO3 (0 0 1)/Fe3O4 (1 1 1) interfaces on the epitaxy and magnetism. The observed epitaxial relations between h-RFeO3 and Fe3O4 indicate an unusual matching of Fe sub-lattices rather than a matching of O sub-lattices. The out-of-plane direction was found to be the easy magnetic axis for h-YbFeO3 (0 0 1) but the hard axis for Fe3O4 (1 1 1) in the h-YbFeO3 (0 0 1)/Fe3O4 (1 1 1)/Al2O3 (0 0 1) films, suggesting a perpendicular magnetic alignment at the h-YbFeO3 (0 0 1)/Fe3O4 (1 1 1) interface. These results indicate that Fe3O4 (1 1 1)/Al2O3 (0 0 1) could be a promising substrate for epitaxial growth of h-RFeO3 films of well-defined interface and for exploiting their spintronic properties.

  12. Trapped charge densities in Al2O3-based silicon surface passivation layers

    NASA Astrophysics Data System (ADS)

    Jordan, Paul M.; Simon, Daniel K.; Mikolajick, Thomas; Dirnstorfer, Ingo

    2016-06-01

    In Al2O3-based passivation layers, the formation of fixed charges and trap sites can be strongly influenced by small modifications in the stack layout. Fixed and trapped charge densities are characterized with capacitance voltage profiling and trap spectroscopy by charge injection and sensing, respectively. Al2O3 layers are grown by atomic layer deposition with very thin (˜1 nm) SiO2 or HfO2 interlayers or interface layers. In SiO2/Al2O3 and HfO2/Al2O3 stacks, both fixed charges and trap sites are reduced by at least a factor of 5 compared with the value measured in pure Al2O3. In Al2O3/SiO2/Al2O3 or Al2O3/HfO2/Al2O3 stacks, very high total charge densities of up to 9 × 1012 cm-2 are achieved. These charge densities are described as functions of electrical stress voltage, time, and the Al2O3 layer thickness between silicon and the HfO2 or the SiO2 interlayer. Despite the strong variation of trap sites, all stacks reach very good effective carrier lifetimes of up to 8 and 20 ms on p- and n-type silicon substrates, respectively. Controlling the trap sites in Al2O3 layers opens the possibility to engineer the field-effect passivation in the solar cells.

  13. Radiation endurance in Al2O3 nanoceramics

    NASA Astrophysics Data System (ADS)

    García Ferré, F.; Mairov, A.; Ceseracciu, L.; Serruys, Y.; Trocellier, P.; Baumier, C.; Kaïtasov, O.; Brescia, R.; Gastaldi, D.; Vena, P.; Beghi, M. G.; Beck, L.; Sridharan, K.; di Fonzo, F.

    2016-09-01

    The lack of suitable materials solutions stands as a major challenge for the development of advanced nuclear systems. Most issues are related to the simultaneous action of high temperatures, corrosive environments and radiation damage. Oxide nanoceramics are a promising class of materials which may benefit from the radiation tolerance of nanomaterials and the chemical compatibility of ceramics with many highly corrosive environments. Here, using thin films as a model system, we provide new insights into the radiation tolerance of oxide nanoceramics exposed to increasing damage levels at 600 °C –namely 20, 40 and 150 displacements per atom. Specifically, we investigate the evolution of the structural features, the mechanical properties, and the response to impact loading of Al2O3 thin films. Initially, the thin films contain a homogeneous dispersion of nanocrystals in an amorphous matrix. Irradiation induces crystallization of the amorphous phase, followed by grain growth. Crystallization brings along an enhancement of hardness, while grain growth induces softening according to the Hall-Petch effect. During grain growth, the excess mechanical energy is dissipated by twinning. The main energy dissipation mechanisms available upon impact loading are lattice plasticity and localized amorphization. These mechanisms are available in the irradiated material, but not in the as-deposited films.

  14. Radiation endurance in Al2O3 nanoceramics

    PubMed Central

    García Ferré, F.; Mairov, A.; Ceseracciu, L.; Serruys, Y.; Trocellier, P.; Baumier, C.; Kaïtasov, O.; Brescia, R.; Gastaldi, D.; Vena, P.; Beghi, M. G.; Beck, L.; Sridharan, K.; Di Fonzo, F.

    2016-01-01

    The lack of suitable materials solutions stands as a major challenge for the development of advanced nuclear systems. Most issues are related to the simultaneous action of high temperatures, corrosive environments and radiation damage. Oxide nanoceramics are a promising class of materials which may benefit from the radiation tolerance of nanomaterials and the chemical compatibility of ceramics with many highly corrosive environments. Here, using thin films as a model system, we provide new insights into the radiation tolerance of oxide nanoceramics exposed to increasing damage levels at 600 °C –namely 20, 40 and 150 displacements per atom. Specifically, we investigate the evolution of the structural features, the mechanical properties, and the response to impact loading of Al2O3 thin films. Initially, the thin films contain a homogeneous dispersion of nanocrystals in an amorphous matrix. Irradiation induces crystallization of the amorphous phase, followed by grain growth. Crystallization brings along an enhancement of hardness, while grain growth induces softening according to the Hall-Petch effect. During grain growth, the excess mechanical energy is dissipated by twinning. The main energy dissipation mechanisms available upon impact loading are lattice plasticity and localized amorphization. These mechanisms are available in the irradiated material, but not in the as-deposited films. PMID:27653832

  15. Characterization of 12CaO x 7Al2O3 doped indium tin oxide films for transparent cathode in top-emission organic light-emitting diodes.

    PubMed

    Jung, Chul Ho; Hwang, In Rok; Park, Bae Ho; Yoon, Dae Ho

    2013-11-01

    12CaO x 7Al2O3, insulator (C12A7) doped indium tin oxide (ITO) (ITO:C12A7) films were fabricated using a radio frequency magnetron co-sputtering system with ITO and C12A7 targets. The qualitative and quantitative properties of ITO:C12A7 films, as a function of C12A7 concentration, were examined via X-ray photoemission spectroscopy and synchrotron X-ray scattering as well as by conducting atomic force microscopy. The work function of ITO:C12A7 (1.3%) films of approximately 2.8 eV obtained by high resolution photoemission spectroscopy measurements make them a reasonable cathode for top-emission organic light-emitting diodes.

  16. Mechanism of interfacial layer suppression after performing surface Al(CH3)3 pretreatment during atomic layer deposition of Al2O3

    NASA Astrophysics Data System (ADS)

    Xu, Min; Zhang, Chi; Ding, Shi-Jin; Lu, Hong-Liang; Chen, Wei; Sun, Qing-Qing; Zhang, David Wei; Wang, Li-Kang

    2006-11-01

    During atomic layer deposition of high permittivity (high-k) metal oxide gate dielectrics, an interfacial layer (IL) containing SiOx between high-k dielectric and Si substrate is almost unavoidable. However, an Al(CH3)3 (TMA) pretreatment for 3600s on H-terminated silicon surface can effectively reduce the interfacial layer from 1.7to0.5nm during atomic layer deposition of aluminum oxide. Interestingly, the surface TMA pretreatment increases the thickness of the initial IL during atomic layer deposition, but it greatly suppresses the final IL after 35 growth cycles. A reasonable mechanism is proposed based on the steric hindrance effect cofunctioning with the interfacial Al catalyzing effect.

  17. The influences of surface treatment and gas annealing conditions on the inversion behaviors of the atomic-layer-deposition Al2O3/n-In0.53Ga0.47As metal-oxide-semiconductor capacitor

    NASA Astrophysics Data System (ADS)

    Trinh, H. D.; Chang, E. Y.; Wu, P. W.; Wong, Y. Y.; Chang, C. T.; Hsieh, Y. F.; Yu, C. C.; Nguyen, H. Q.; Lin, Y. C.; Lin, K. L.; Hudait, M. K.

    2010-07-01

    The inversion behaviors of atomic-layer-deposition Al2O3/n-In0.53Ga0.47As metal-oxide-semiconductor capacitors are studied by various surface treatments and postdeposition annealing using different gases. By using the combination of wet sulfide and dry trimethyl aluminum surface treatment along with pure hydrogen annealing, a strong inversion capacitance-voltage (C-V) response is observed, indicating a remarkable reduction in interface trap state density (Dit) at lower half-part of In0.53Ga0.47As band gap. This low Dit was confirmed by the temperature independent C-V stretch-out and horizontal C-V curves. The x-ray photoelectron spectroscopy spectra further confirm the effectiveness of hydrogen annealing on the reduction of native oxides.

  18. High-Mobility Transparent SnO2 and ZnO-SnO2 Thin-Film Transistors with SiO2/Al2O3 Gate Insulators

    NASA Astrophysics Data System (ADS)

    Cheong, Woo-Seok; Yoon, Sung-Min; Hwang, Chi-Sun; Chu, Hye Yong

    2009-04-01

    Using a double-layered gate insulator [SiO2 (100 nm)/Al2O3 (10 nm)] and a dry-etching process for the channel layer, we could obtain high mobility top-gate SnO2 and ZnO-SnO2 (ZTO) transparent thin-film transistor (TTFT). After annealing at 300 °C, for 1 h in O2 ambient, the saturated mobility of SnO2 TTFT was 17.4 cm2 s-1 V-1, and that of ZTO TTFT was 50.4 cm2 s-1 V-1. Generally, both devices operated in the enhancement mode with a drain current on-off ratio of ˜106.

  19. Atomic layer deposition of Al2O3 on H-passivated Si: Al(CH3)2OH surface reactions with H/Si(100)-2×1

    NASA Astrophysics Data System (ADS)

    Halls, Mathew D.; Raghavachari, Krishnan; Frank, Martin M.; Chabal, Yves J.

    2003-10-01

    Infrared absorption studies of Al(CH3)3 interacting with H-terminated Si reveal that O incorporation from gas-phase impurities may be a crucial factor in interface formation in atomic layer deposition. Hybrid density-functional calculations have therefore been carried out on silicon cluster models to investigate the possible pathways for reaction between the important atomic layer deposition side-reaction product Al(CH3)2OH (DMAOH) and the H/Si(100)-2×1 surface. Comparisons with the analogous surface reactions for Al(CH3)3 and H2O are made. In general, the DMAOH surface reaction pathways are characterized by an activation of reactions involving the OH groups and suppression of CH3 group reactions, compared to Al(CH3)3 and H2O. A unique reaction pathway for DMAOH and the H/Si(100)-2×1 surface is identified resulting in the deposition of -O-Al(CH3)2 on the surface, which is significant since it represents an atomic-layer interface between Si and Al2O3. This reaction has an energy barrier of 1.3 eV and is the most thermodynamically favored pathway with an exothermicity of 0.9 eV.

  20. Transparent and flexible capacitors based on nanolaminate Al2O3/TiO2/Al2O3.

    PubMed

    Zhang, Guozhen; Wu, Hao; Chen, Chao; Wang, Ti; Yue, Jin; Liu, Chang

    2015-01-01

    Transparent and flexible capacitors based on nanolaminate Al2O3/TiO2/Al2O3 dielectrics have been fabricated on indium tin oxide-coated polyethylene naphthalate substrates by atomic layer deposition. A capacitance density of 7.8 fF/μm(2) at 10 KHz was obtained, corresponding to a dielectric constant of 26.3. Moreover, a low leakage current density of 3.9 × 10(-8) A/cm(2) at 1 V has been realized. Bending test shows that the capacitors have better performances in concave conditions than in convex conditions. The capacitors exhibit an average optical transmittance of about 70% in visible range and thus open the door for applications in transparent and flexible integrated circuits.

  1. Epitaxially grown crystalline Al2O3 interlayer on β-Ga2O3(010) and its suppressed interface state density

    NASA Astrophysics Data System (ADS)

    Kamimura, Takafumi; Krishnamurthy, Daivasigamani; Kuramata, Akito; Yamakoshi, Shigenobu; Higashiwaki, Masataka

    2016-12-01

    Al2O3 films were deposited on β-Ga2O3(010) and β-Ga2O3 (\\bar{2}01) substrates by atomic layer deposition at 250 °C, and their interface state densities (D it) at shallow energies were evaluated using a high-low capacitance-voltage (C-V) method. Al2O3/β-Ga2O3(010) showed lower D it values (5.9 × 1010 to 9.3 × 1011 cm-2 eV-1) than Al2O3/β-Ga2O3 (\\bar{2}01) (2.0 × 1011 to 2.0 × 1012 cm-2 eV-1) in an energy range of -0.8 to -0.1 eV. Cross-sectional transmission electron microscopy analysis indicated the formation of a uniform amorphous Al2O3 layer on the β-Ga2O3 (\\bar{2}01) substrate. In contrast, a crystalline Al2O3 interlayer with a thickness of 3.2 ± 0.7 nm with an amorphous Al2O3 top layer was formed on the β-Ga2O3(010) substrate, which effectively decreased D it. Moreover, thicker interlayers showing lower D it values at deep state levels were formed at deposition temperatures higher than 100 °C, which were evaluated by shifts in the C-V curves.

  2. Angular properties of pure and Ca-substituted YBa2Cu3O7-δ superconducting thin films grown on SrTiO3 and CeO2 buffered Al2O3 substrates

    NASA Astrophysics Data System (ADS)

    Augieri, A.; Celentano, G.; Ciontea, L.; Galluzzi, V.; Gambardella, U.; Halbritter, J.; Petrisor, T.; Rufoloni, A.; Vannozzi, A.

    2007-09-01

    In this work transport properties of superconducting 10 at.% Ca-substituted YBCO thin films grown on (1 0 0)-SrTiO 3 single crystal substrate (STO) and superconducting pure and 10 at.% Ca-substituted YBCO thin films grown on CeO 2 buffered Al 2O 3 substrates (CAO) have been analyzed as a function of the temperature, applied magnetic field and angle between magnetic field direction and the direction normal to the film surfaces. Particularly, the angular analysis provides an easy way to discriminate between isotropic point defects and correlated pinning sites. Despite the intragrain pinning mechanisms remained unaffected by Ca substitution, a detrimental effect on grain boundary properties clearly emerged for 10 at.% Ca concentration. This effect is enhanced in sample grown on CeO 2 buffered sapphire where a more disturbed grain boundary is expected resulting in an enhancement of the correlated pinning, already observed in pure YBCO films grown on CAO, and in a reduction of the intrinsic pinning efficiency.

  3. Vacuum ultraviolet thin films. I - Optical constants of BaF2, CaF2, LaF3, MgF2, Al2O3, HfO2, and SiO2 thin films. II - Vacuum ultraviolet all-dielectric narrowband filters

    NASA Technical Reports Server (NTRS)

    Zukic, Muamer; Torr, Douglas G.; Spann, James F.; Torr, Marsha R.

    1990-01-01

    An iteration process matching calculated and measured reflectance and transmittance values in the 120-230 nm VUV region is presently used to ascertain the optical constants of bulk MgF2, as well as films of BaF2, CaF2, LaF3, MgF2, Al2O3, HfO2, and SiO2 deposited on MgF2 substrates. In the second part of this work, a design concept is demonstrated for two filters, employing rapidly changing extinction coefficients, centered at 135 nm for BaF2 and 141 nm for SiO2. These filters are shown to yield excellent narrowband spectral performance in combination with narrowband reflection filters.

  4. Ultra-low thermal conductivity in W/Al2O3 nanolaminates.

    PubMed

    Costescu, R M; Cahill, D G; Fabreguette, F H; Sechrist, Z A; George, S M

    2004-02-13

    Atomic layer deposition and magnetron sputter deposition were used to synthesize thin-film multilayers of W/Al(2)O(3). With individual layers only a few nanometers thick, the high interface density produced a strong impediment to heat transfer, giving rise to a thermal conductivity of approximately 0.6 watts per meter per kelvin. This result suggests that high densities of interfaces between dissimilar materials may provide a route for the production of thermal barriers with ultra-low thermal conductivity.

  5. Characterization of epitaxial GaAs MOS capacitors using atomic layer-deposited TiO2/Al2O3 gate stack: study of Ge auto-doping and p-type Zn doping

    PubMed Central

    2012-01-01

    Electrical and physical properties of a metal-oxide-semiconductor [MOS] structure using atomic layer-deposited high-k dielectrics (TiO2/Al2O3) and epitaxial GaAs [epi-GaAs] grown on Ge(100) substrates have been investigated. The epi-GaAs, either undoped or Zn-doped, was grown using metal-organic chemical vapor deposition method at 620°C to 650°C. The diffusion of Ge atoms into epi-GaAs resulted in auto-doping, and therefore, an n-MOS behavior was observed for undoped and Zn-doped epi-GaAs with the doping concentration up to approximately 1017 cm-3. This is attributed to the diffusion of a significant amount of Ge atoms from the Ge substrate as confirmed by the simulation using SILVACO software and also from the secondary ion mass spectrometry analyses. The Zn-doped epi-GaAs with a doping concentration of approximately 1018 cm-3 converts the epi-GaAs layer into p-type since the Zn doping is relatively higher than the out-diffused Ge concentration. The capacitance-voltage characteristics show similar frequency dispersion and leakage current for n-type and p-type epi-GaAs layers with very low hysteresis voltage (approximately 10 mV). PACS: 81.15.Gh. PMID:22297193

  6. Enhanced thermal stability of carbon nanotubes by plasma surface modification in Al2O3 composites

    NASA Astrophysics Data System (ADS)

    Cho, Hoonsung; Shi, Donglu; Guo, Yan; Lian, Jie; Ren, Zhifeng; Poudel, Bed; Song, Yi; Abot, Jandro L.; Singh, Dileep; Routbort, Jules; Wang, Lumin; Ewing, Rodney C.

    2008-10-01

    A plasma polymerization method was employed to deposit an ultrathin pyrrole film of 3 nm onto the surfaces of single wall carbon nanotubes (SWCNTs) and Al2O3 nanoparticles for developing high-strength nanocomposites. The surfaces of plasma coated SWCNTs and Al2O3 nanoparticles were studied by high resolution transmission electron microscopy (TEM) and time-of-flight secondary ion mass spectroscopy. After sintering the SWCNTs-Al2O3 composites at different temperatures (maximum of 1200 °C), the thermal stability of plasma-coated SWCNTs was significantly increased, compared to their uncoated counterparts. After hot-press sintering, the SWCNTs without plasma coating were essentially decomposed into amorphous clusters in the composites, leading to degraded mechanical properties. However, under the same sintering conditions, the plasma surface modified SWCNTs were well preserved and distributed in the composite matrices. The effects of plasma surface coating on the thermal stability of SWCNTs and mechanical behavior of the nanocomposites are discussed.

  7. The role of thermally and chemically stable composite Y2O3:Al2O3 in the development of YBa2Cu3O7-x films on metal substrates

    NASA Astrophysics Data System (ADS)

    Stan, L.; Tao, B. W.; Holesinger, T. G.; Yang, H.; Feldmann, D. M.; Maiorov, B.; Baily, S. A.; Civale, L.; DePaula, R. F.; Li, Y. R.; Jia, Q. X.

    2010-04-01

    We have developed Y2O3:Al2O3 (YAlO) composites to simplify the architecture of superconducting YBa2Cu3O7-x (YBCO) thick films on polycrystalline metal substrates. By implementing the use of YAlO, we have reduced the total number of non-superconducting layers between the polycrystalline metal substrate and the YBCO film from five (as in the standard architecture used by industry) to three. The YBCO films grown on this simplified platform exhibited an in-plane mosaic spread of less than 4° in full width at half-maximum, correlated pinning centered at \\mathbf {H}\\parallel c , and an α value (the proportionality factor of the critical current density H - α) of around 0.38 over the field range of 0.1-1.0 T. We believe that the excellent structural stability at high temperatures and the exceptional chemical inertness in an oxidizing environment make YAlO a good choice for use in the growth of biaxially oriented MgO and subsequent buffer and superconducting layers.

  8. Highly Flexible and Transparent Ag Nanowire Electrode Encapsulated with Ultra-Thin Al2O3: Thermal, Ambient, and Mechanical Stabilities

    PubMed Central

    Hwang, Byungil; An, Youngseo; Lee, Hyangsook; Lee, Eunha; Becker, Stefan; Kim, Yong-Hoon; Kim, Hyoungsub

    2017-01-01

    There is an increasing demand in the flexible electronics industry for highly robust flexible/transparent conductors that can withstand high temperatures and corrosive environments. In this work, outstanding thermal and ambient stability is demonstrated for a highly transparent Ag nanowire electrode with a low electrical resistivity, by encapsulating it with an ultra-thin Al2O3 film (around 5.3 nm) via low-temperature (100 °C) atomic layer deposition. The Al2O3-encapsulated Ag nanowire (Al2O3/Ag) electrodes are stable even after annealing at 380 °C for 100 min and maintain their electrical and optical properties. The Al2O3 encapsulation layer also effectively blocks the permeation of H2O molecules and thereby enhances the ambient stability to greater than 1,080 h in an atmosphere with a relative humidity of 85% at 85 °C. Results from the cyclic bending test of up to 500,000 cycles (under an effective strain of 2.5%) confirm that the Al2O3/Ag nanowire electrode has a superior mechanical reliability to that of the conventional indium tin oxide film electrode. Moreover, the Al2O3 encapsulation significantly improves the mechanical durability of the Ag nanowire electrode, as confirmed by performing wiping tests using isopropyl alcohol. PMID:28128218

  9. Highly Flexible and Transparent Ag Nanowire Electrode Encapsulated with Ultra-Thin Al2O3: Thermal, Ambient, and Mechanical Stabilities

    NASA Astrophysics Data System (ADS)

    Hwang, Byungil; An, Youngseo; Lee, Hyangsook; Lee, Eunha; Becker, Stefan; Kim, Yong-Hoon; Kim, Hyoungsub

    2017-01-01

    There is an increasing demand in the flexible electronics industry for highly robust flexible/transparent conductors that can withstand high temperatures and corrosive environments. In this work, outstanding thermal and ambient stability is demonstrated for a highly transparent Ag nanowire electrode with a low electrical resistivity, by encapsulating it with an ultra-thin Al2O3 film (around 5.3 nm) via low-temperature (100 °C) atomic layer deposition. The Al2O3-encapsulated Ag nanowire (Al2O3/Ag) electrodes are stable even after annealing at 380 °C for 100 min and maintain their electrical and optical properties. The Al2O3 encapsulation layer also effectively blocks the permeation of H2O molecules and thereby enhances the ambient stability to greater than 1,080 h in an atmosphere with a relative humidity of 85% at 85 °C. Results from the cyclic bending test of up to 500,000 cycles (under an effective strain of 2.5%) confirm that the Al2O3/Ag nanowire electrode has a superior mechanical reliability to that of the conventional indium tin oxide film electrode. Moreover, the Al2O3 encapsulation significantly improves the mechanical durability of the Ag nanowire electrode, as confirmed by performing wiping tests using isopropyl alcohol.

  10. Structural, electronic structure, and band alignment properties at epitaxial NiO/Al2O3 heterojunction evaluated from synchrotron based X-ray techniques

    NASA Astrophysics Data System (ADS)

    Singh, S. D.; Nand, Mangla; Das, Arijeet; Ajimsha, R. S.; Upadhyay, Anuj; Kamparath, Rajiv; Shukla, D. K.; Mukherjee, C.; Misra, P.; Rai, S. K.; Sinha, A. K.; Jha, S. N.; Phase, D. M.; Ganguli, Tapas

    2016-04-01

    The valence band offset value of 2.3 ± 0.2 eV at epitaxial NiO/Al2O3 heterojunction is determined from photoelectron spectroscopy experiments. Pulsed laser deposited thin film of NiO on Al2O3 substrate is epitaxially grown along [111] direction with two domain structures, which are in-plane rotated by 60° with respect to each other. Observation of Pendellosung oscillations around Bragg peak confirms high interfacial and crystalline quality of NiO layer deposited on Al2O3 substrate. Surface related feature in Ni 2p3/2 core level spectra along with oxygen K-edge soft X-ray absorption spectroscopy results indicates that the initial growth of NiO on Al2O3 substrate is in the form of islands, which merge to form NiO layer for the larger coverage. The value of conduction band offset is also evaluated from the measured values of band gaps of NiO and Al2O3 layers. A type-I band alignment at NiO and Al2O3 heterojunction is also obtained. The determined values of band offsets can be useful in heterojunction based light emitting devices.

  11. The influence of ZrO2/20%Y2O3 and Al2O3 deposited coatings to the behavior of an aluminum alloy subjected to mechanical shock

    NASA Astrophysics Data System (ADS)

    Pintilei, G. L.; Crismaru, V. I.; Abrudeanu, M.; Munteanu, C.; Luca, D.; Istrate, B.

    2015-10-01

    Aluminum alloys are used in the aerospace industry due to their good mechanical properties and their low density compared with the density of steels. Usually the parts made of aluminum alloys contribute to the structural frame of aircrafts and they must withstand static and variable mechanical loads and also mechanical loads applied in a very short time which determine different phenomenon's in the material behavior then static or fatigue loads. This paper analysis the resilience of a 2024 aluminum alloy subjected to shock loads and the way how a coating can improve its behavior. For improving the behavior two coatings were considered: Al2O3 with 99.5% purity and ZrO2/20%Y2O3. The coatings were deposited on the base material by plasma spraying. The samples with and without coating were subject to mechanical shock to determine the resilience of the materials and the cracks propagation was investigated using SEM analysis. To highlight the physical phenomenon's that appear in the samples during the mechanical shock, explicit finite element analysis were done using Ansys 14.5 software.

  12. High Temperature Mechanical Characterization and Analysis of Al2O3 /Al2O3 Composition

    NASA Technical Reports Server (NTRS)

    Gyekenyesi, John Z.; Jaskowiak, Martha H.

    1999-01-01

    Sixteen ply unidirectional zirconia coated single crystal Al2O3 fiber reinforced polycrystalline Al2O3 was tested in uniaxial tension at temperatures to 1400 C in air. Fiber volume fractions ranged from 26 to 31%. The matrix has primarily open porosity of approximately 40%. Theories for predicting the Young's modulus, first matrix cracking stress, and ultimate strength were applied and evaluated for suitability in predicting the mechanical behavior of Al2O3/Al2O3 composites. The composite exhibited pseudo tough behavior (increased area under the stress/strain curve relative to monolithic alumina) from 22 to 1400 C. The rule-of-mixtures provides a good estimate of the Young's modulus of the composite using the constituent properties from room temperature to approximately 1200 C for short term static tensile tests in air. The ACK theory provides the best approximation of the first matrix cracking stress while accounting for residual stresses at room temperature. Difficulties in determining the fiber/matrix interfacial shear stress at high temperatures prevented the accurate prediction of the first matrix cracking stress above room temperature. The theory of Cao and Thouless, based on Weibull statistics, gave the best prediction for the composite ultimate tensile strength.

  13. Stability of Al2O3 and Al2O3/a-SiNx:H stacks for surface passivation of crystalline silicon

    NASA Astrophysics Data System (ADS)

    Dingemans, G.; Engelhart, P.; Seguin, R.; Einsele, F.; Hoex, B.; van de Sanden, M. C. M.; Kessels, W. M. M.

    2009-12-01

    The thermal and ultraviolet (UV) stability of crystalline silicon (c-Si) surface passivation provided by atomic layer deposited Al2O3 was compared with results for thermal SiO2. For Al2O3 and Al2O3/a-SiNx:H stacks on 2 Ω cm n-type c-Si, ultralow surface recombination velocities of Seff<3 cm/s were obtained and the passivation proved sufficiently stable (Seff<14 cm/s) against a high temperature "firing" process (>800 °C) used for screen printed c-Si solar cells. Effusion measurements revealed the loss of hydrogen and oxygen during firing through the detection of H2 and H2O. Al2O3 also demonstrated UV stability with the surface passivation improving during UV irradiation.

  14. Plasma-Assisted ALD of an Al2O3 Permeation Barrier Layer on Plastic

    NASA Astrophysics Data System (ADS)

    Lei, Wenwen; Li, Xingcun; Chen, Qiang; Wang, Zhengduo

    2012-02-01

    Atomic layer deposition (ALD) technique is used in the preparation of organic/inorganic layers, which requires uniform surfaces with their thickness down to several nanometers. For film with such thickness, the growth mode defined as the arrangement of clusters on the surface during the growth is of significance. In this work, Al2O3 thin film was deposited on various interfacial species of pre-treated polyethylene terephthalate (PET, 12 μm) by plasma assisted atomic layer deposition (PA-ALD), where trimethyl aluminium was used as the Al precursor and O2 as the oxygen source. The interfacial species, -NH3, -OH, and -COOH as well as SiCHO (derived from monomer of HMDSO plasma), were grafted previously by plasma and chemical treatments. The growth mode of PA-ALD Al2O3 was then investigated in detail by combining results from in-situ diagnosis of spectroscopic ellipsometry (SE) and ex-situ characterization of as-deposited layers from the morphologies scanned by atomic force microscopy (AFM). In addition, the oxygen transmission rates (OTR) of the original and treated plastic films were measured. The possible reasons for the dependence of the OTR values on the surface species were explored.

  15. Nucleation and growth mechanisms of Al2O3 atomic layerdeposition on synthetic polycrystalline MoS2.

    PubMed

    Zhang, H; Chiappe, D; Meersschaut, J; Conard, T; Franquet, A; Nuytten, T; Mannarino, M; Radu, I; Vandervorst, W; Delabie, A

    2017-02-07

    Two-dimensional (2D) semiconducting transition metal dichalcogenides (TMDs) are of great interest for applications in nano-electronic devices. Their incorporation requires the deposition of nm-thin and continuous high-k dielectric layers on the 2D TMDs. Atomic layer deposition (ALD) of high-k dielectric layers is well established on Si surfaces: the importance of a high nucleation density for rapid layer closure is well known and the nucleation mechanisms have been thoroughly investigated. In contrast, the nucleation of ALD on 2D TMD surfaces is less well understood and a quantitative analysis of the deposition process is lacking. Therefore, in this work, we investigate the growth of Al2O3 (using Al(CH3)3/H2O ALD) on MoS2 whereby we attempt to provide a complete insight into the use of several complementary characterization techniques, including X-ray photo-electron spectroscopy, elastic recoil detection analysis, scanning electron microscopy, and time-of-flight secondary ion mass spectrometry. To reveal the inherent reactivity of MoS2, we exclude the impact of surface contamination from a transfer process by direct Al2O3 deposition on synthetic MoS2 layers obtained by a high temperature sulfurization process. It is shown that Al2O3 ALD on the MoS2 surface is strongly inhibited at temperatures between 125°C and 300°C, with no growth occurring on MoS2 crystal basal planes and selective nucleation only at line defects or grain boundaries at MoS2 top surface. During further deposition, the as-formed Al2O3 nano-ribbons grow in both vertical and lateral directions. Eventually, a continuous Al2O3 film is obtained by lateral growth over the MoS2 crystal basal plane, with the point of layer closure determined by the grain size at the MoS2 top surface and the lateral growth rate. The created Al2O3/MoS2 interface consists mainly of van der Waals interactions. The nucleation is improved by contributions of reversible adsorption on the MoS2 basal planes by using low

  16. Effect of Ultrasonic Vibration on the Behavior of Antifriction and Wear Resistance of Al2O3/Al2O3 Ceramic Friction Pairs Under Oil Lubrication

    NASA Astrophysics Data System (ADS)

    Dong, X. Y.; Qiao, Y. L.; Zang, Y.; Cui, Q. S.

    The behavior of antifriction and wear resistance of Al2O3/Al2O3 ceramic friction pairs lubricated by four different lubrication oils under ultrasonic vibration was studied. The surface morphologies of wear scare was analyzed by metallographic microscope. The effect mechanism of ultrasonic vibration on frictional pairs under different lubrication oils was discussed. The studied results showed that, ultrasonic vibration would improve the behavior of antifriction and wear resistance of the Al2O3/Al2O3 ceramic friction pairs under various lubrication oils.The improving would be dramaticer when the viscosity of lubrication oil was low. Ultrasonic vibration decreased the friction coefficient and wear volume 12.9% and 38.7% respectively, when the lubrication oil was 6#,the viscosity of which is 39.77 mm2/s. When the lubrication oil was 150BS, the viscosity of which is 549.69 mm2/s, ultrasonic vibration made friction coefficient and wear volume decreased 4.6% and 11.6% respectively.The effect of ultrasonic vibration on the behavior of antifriction and wear resistance of Al2O3/Al2O3 ceramic friction pairs was determined by the formation and the destruction of oil film on the friction surface and the upward floatage created by ultrasonic vibration.

  17. Energy-band alignment of atomic layer deposited (HfO2)x(Al2O3)1 - x gate dielectrics on 4H-SiC

    NASA Astrophysics Data System (ADS)

    Jia, Ren-Xu; Dong, Lin-Peng; Niu, Ying-Xi; Li, Cheng-Zhan; Song, Qing-Wen; Tang, Xiao-Yan; Yang, Fei; Zhang, Yu-Ming

    2015-03-01

    We study a series of (HfO2)x(Al2O3)1 - x /4H-SiC MOS capacitors. It is shown that the conduction band offset of HfO2 is 0.5 eV and the conduction band offset of HfAlO is 1.11-1.72 eV. The conduction band offsets of (HfO2)x(Al2O3)1 - x are increased with the increase of the Al composition, and the (HfO2)x(Al2O3)1 - x offer acceptable barrier heights (> 1 eV) for both electrons and holes. With a higher conduction band offset, (HfO2)x(Al2O3)1 - x/4H-SiC MOS capacitors result in a ˜ 3 orders of magnitude lower gate leakage current at an effective electric field of 15 MV/cm and roughly the same effective breakdown field of ˜ 25 MV/cm compared to HfO2. Considering the tradeoff among the band gap, the band offset, and the dielectric constant, we conclude that the optimum Al2O3 concentration is about 30% for an alternative gate dielectric in 4H-SiC power MOS-based transistors. Project supported by the National Natural Science Foundation of China (Grant Nos. 51272202 and 61234006) and the Science Project of State Grid, China (Grant No. SGRI-WD-71-14-004).

  18. Pinhole Effect on the Melting Behavior of Ag@Al2O3 SERS Substrates.

    PubMed

    Ma, Lingwei; Huang, Yu; Hou, Mengjing; Li, Jianghao; Zhang, Zhengjun

    2016-12-01

    High-temperature surface-enhanced Raman scattering (SERS) sensing is significant for practical detections, and pinhole-containing (PC) metal@oxide structures possessing both enhanced thermal stability and superior SERS sensitivity are served as promising SERS sensors at extreme sensing conditions. Through tuning the Al2O3 precursors' exposure time during atomic layer deposition (ALD), Al2O3 shells with different amount of pinholes were covered over Ag nanorods (Ag NRs). By virtue of these unique PC Ag@Al2O3 nanostructures, herein we provide an excellent platform to investigate the relationship between the pinhole rate of Al2O3 shells and the melting behavior, high-temperature SERS performances of these core-shell nanostructures. Pinhole effect on the melting procedures of PC Ag@Al2O3 substrates was characterized in situ via their reflectivity variations during heating, and the specific melting point was quantitatively estimated. It is found that the melting point of PC Ag@Al2O3 raised along with the decrement of pinhole rate, and substrates with less pinholes exhibited better thermal stability but sacrificed SERS efficiency. This work achieved highly reliable and precise control of the pinholes over Al2O3 shells, offering sensitive SERS substrates with intensified thermal stability and superior SERS performances at extreme sensing conditions.

  19. Pinhole Effect on the Melting Behavior of Ag@Al2O3 SERS Substrates

    NASA Astrophysics Data System (ADS)

    Ma, Lingwei; Huang, Yu; Hou, Mengjing; Li, Jianghao; Zhang, Zhengjun

    2016-03-01

    High-temperature surface-enhanced Raman scattering (SERS) sensing is significant for practical detections, and pinhole-containing (PC) metal@oxide structures possessing both enhanced thermal stability and superior SERS sensitivity are served as promising SERS sensors at extreme sensing conditions. Through tuning the Al2O3 precursors' exposure time during atomic layer deposition (ALD), Al2O3 shells with different amount of pinholes were covered over Ag nanorods (Ag NRs). By virtue of these unique PC Ag@Al2O3 nanostructures, herein we provide an excellent platform to investigate the relationship between the pinhole rate of Al2O3 shells and the melting behavior, high-temperature SERS performances of these core-shell nanostructures. Pinhole effect on the melting procedures of PC Ag@Al2O3 substrates was characterized in situ via their reflectivity variations during heating, and the specific melting point was quantitatively estimated. It is found that the melting point of PC Ag@Al2O3 raised along with the decrement of pinhole rate, and substrates with less pinholes exhibited better thermal stability but sacrificed SERS efficiency. This work achieved highly reliable and precise control of the pinholes over Al2O3 shells, offering sensitive SERS substrates with intensified thermal stability and superior SERS performances at extreme sensing conditions.

  20. Surface passivation and optical characterization of Al2O3/a-SiCx stacks on c-Si substrates.

    PubMed

    López, Gema; Ortega, Pablo R; Voz, Cristóbal; Martín, Isidro; Colina, Mónica; Morales, Anna B; Orpella, Albert; Alcubilla, Ramón

    2013-01-01

    The aim of this work is to study the surface passivation of aluminum oxide/amorphous silicon carbide (Al2O3/a-SiCx) stacks on both p-type and n-type crystalline silicon (c-Si) substrates as well as the optical characterization of these stacks. Al2O3 films of different thicknesses were deposited by thermal atomic layer deposition (ALD) at 200 °C and were complemented with a layer of a-SiCx deposited by plasma-enhanced chemical vapor deposition (PECVD) to form anti-reflection coating (ARC) stacks with a total thickness of 75 nm. A comparative study has been carried out on polished and randomly textured wafers. We have experimentally determined the optimum thickness of the stack for photovoltaic applications by minimizing the reflection losses over a wide wavelength range (300-1200 nm) without compromising the outstanding passivation properties of the Al2O3 films. The upper limit of the surface recombination velocity (S eff,max) was evaluated at a carrier injection level corresponding to 1-sun illumination, which led to values below 10 cm/s. Reflectance values below 2% were measured on textured samples over the wavelength range of 450-1000 nm.

  1. Characterization of SDC-Al2O3 solid electrolyte

    NASA Astrophysics Data System (ADS)

    Ramesh, S.; Raju, K. C. James; Reddy, C. Vishnuvardhan

    2012-06-01

    SDC20-Al2O3 materials were synthesized through the sol-gel method. Dense SDC20-Al2O3 ceramics were obtained through sintering the pellets at 1300°C. SDC20-Al2O3 materials were characterized by XRD, SEM and impedance spectroscopy. XRD measurements indicate that synthesized materials crystallized in cubic structure. Average crystallite size of the samples was in the range 11-12 nm. The relative density of SDC20-Al2O3 samples was over 95% of the theoretical density. Addition of Al2O3 promotes densification. Surface morphology was analyzed using SEM. The two-probe a.c. impedance spectroscopy was used to study the total ionic conductivity of doped and co-doped ceria in the temperature range 350-700°C. The SDC20-Al2O3 composition showed improved total ionic conductivity and minimum activation energy.

  2. Microstructure and Optical Properties of SS/Mo/Al2O3 Spectrally Selective Solar Absorber Coating

    NASA Astrophysics Data System (ADS)

    Gao, Xiang-Hu; Guo, Zhi-Ming; Geng, Qing-Fen; Ma, Peng-Jun; Liu, Gang

    2017-01-01

    Surface-textured Mo thin film is fabricated by magnetron sputtering through the adjustment of deposition parameters, which exhibits a high absorptance of 0.80 and a low emittance of 0.09. The single-layer Mo deposited on stainless steel (SS) is characterized by x-ray diffraction (XRD), ultra-high resolution scanning electron microscope, atomic force microscope and optical measurement. The controlled surface roughness combined with larger aspect ratio contributes much to the high absorptance and low emittance. Based on the SS/Mo coating, a spectrally selective coating (SS/Mo/Al2O3) is designed and fabricated. The coating shows an amorphous structure and exhibits an absorptance of 0.90 and an emittance of 0.08. Tauc-Lorentz and Drude free-electron models are used to modeling the optical properties of Al2O3 and Mo layers by phase-modulated spectroscopic ellipsometry.

  3. Microstructure and Optical Properties of SS/Mo/Al2O3 Spectrally Selective Solar Absorber Coating

    NASA Astrophysics Data System (ADS)

    Gao, Xiang-Hu; Guo, Zhi-Ming; Geng, Qing-Fen; Ma, Peng-Jun; Liu, Gang

    2016-11-01

    Surface-textured Mo thin film is fabricated by magnetron sputtering through the adjustment of deposition parameters, which exhibits a high absorptance of 0.80 and a low emittance of 0.09. The single-layer Mo deposited on stainless steel (SS) is characterized by x-ray diffraction (XRD), ultra-high resolution scanning electron microscope, atomic force microscope and optical measurement. The controlled surface roughness combined with larger aspect ratio contributes much to the high absorptance and low emittance. Based on the SS/Mo coating, a spectrally selective coating (SS/Mo/Al2O3) is designed and fabricated. The coating shows an amorphous structure and exhibits an absorptance of 0.90 and an emittance of 0.08. Tauc-Lorentz and Drude free-electron models are used to modeling the optical properties of Al2O3 and Mo layers by phase-modulated spectroscopic ellipsometry.

  4. Nanocomposite YCrO3/Al2O3: characterization of the core-shell, magnetic properties, and enhancement of dielectric properties.

    PubMed

    Durán, A; Tiznado, H; Romo-Herrera, J M; Domínguez, D; Escudero, R; Siqueiros, J M

    2014-05-19

    Multifuncionality in polycrystalline multiferroic ceramics can be improved using an advanced synthesis process. In this work, core-shell design is being proposed to enhance the transport properties of biferroic YCrO3. The atomic layer deposition (ALD) thin-film growth technique was used for the YCrO3/Al2O3 (Y@Al) nanocomposite fabrication. A continuous, amorphous, and uniform Al2O3 shell, a few nanometers thick, was obtained and characterized by X-ray photoelectron spectroscopy, X-ray diffraction, and high-resolution transmission electron microscopy. The transport properties of biferroic YCrO3 coated with 50, 500, and 1000 ALD cycles of insulating Al2O3 were investigated using magnetization and AC conductivity measurements. It is observed that the values of the magnetic coercive field and the magnetization are affected by the amorphous and partially crystallized Al2O3 shell. Additionally, the Y@Al nanocomposite experiments show a notorious decreasing in the loss tangent and the electrical conductivity. Accordingly, hysteresis loops in the polarization versus electric energy data confirm the decrease of the leakage current as a consequence of the Al2O3 shell acting as a barrier layer. The results shown here confirm that the core-shell architecture is a promising alternative for improvement of the magnetic and ferroelectric properties in bulk multiferroics.

  5. Glycerol Steam Reforming Over Ni-Fe-Ce/Al2O3 Catalyst: Effect of Cerium.

    PubMed

    Go, Gwang-Sub; Go, Yoo-Jin; Lee, Hong-Joo; Moon, Dong-Ju; Park, Nam-Cook; Kim, Young-Chul

    2016-02-01

    In this work, hydrogen production from glycerol by steam reforming was studied using Ni-metal oxide catalysts. Ni-based catalyst becomes deactivated during steam reforming reactions because of coke deposits and sintering. Therefore, the aim of this study was to reduce carbon deposits and sintering on the catalyst surface by adding a promoter. Ni-metal oxide catalysts supported on Al2O3 were prepared via impregnation method, and the calcined catalyst was reduced under H2 flow for 2 h prior to the reaction. The characteristics of the catalysts were examined by XRD, TPR, TGA, and SEM. The Ni-Fe-Ce/Al2O3 catalyst, which contained less than 2 wt% Ce, showed the highest hydrogen selectivity and glycerol conversion. Further analysis of the catalysts revealed that the Ni-Fe-Ce/Al2O3 catalyst required a lower reduction temperature and produced minimum carbon deposit.

  6. A study on Si / Al 2 O 3 paramagnetic point defects

    NASA Astrophysics Data System (ADS)

    Kühnhold-Pospischil, S.; Saint-Cast, P.; Hofmann, M.; Weber, S.; Jakes, P.; Eichel, R.-A.; Granwehr, J.

    2016-11-01

    In this contribution, negative charges and electronic traps related to the Si / Al 2 O 3 interface were measured and related to paramagnetic point defects and molecular vibrations. To this end, contactless capacitance voltage measurements, X-band electron paramagnetic resonance (EPR), and infrared spectroscopy were carried out, and their results were compared. A change in the negative charge density and electron trap density at the Si / Al 2 O 3 interface was achieved by adding a thermally grown SiO 2 layer with varying thicknesses and conducting an additional temperature treatment. Using EPR, five paramagnetic moments were detected in Si / ( SiO 2 ) / Al 2 O 3 samples with g values of g 1 = 2.0081 ± 0.0002 , g 2 = 2.0054 ± 0.0002 , g 3 = 2.0003 ± 0.0002 , g 4 = 2.0026 ± 0.0002 , and g 5 = 2.0029 ± 0.0002 . Variation of the Al 2 O 3 layer thickness shows that paramagnetic species associated with g1, g2, and g3 are located at the Si / Al 2 O 3 interface, and those with g4 and g5 are located within the bulk Al 2 O 3 . Furthermore, g1, g2, and g3 were shown to originate from oxygen plasma exposure during Al 2 O 3 deposition. Comparing the g values and their location within the Si / Al 2 O 3 system, g1 and g3 can be attributed to P b 0 centers, g3 to Si dangling bonds (Si-dbs), and g4 and g5 to rotating methyl radicals. All paramagnetic moments observed in this contribution disappear after a 5-min temperature treatment at 450 ° C . The deposition of an additional thermal SiO 2 layer between the Si and the Al 2 O 3 decreases the negative fixed charge density and defect density by about one order of magnitude. In this contribution, these changes can be correlated with a decrease in amplitude of the Si-db signal. P b 0 and the methyl radical signals were less affected by this additional SiO 2 layer. Based on these observations, microscopic models for the negative fixed charge density ( Q tot ) and the interface trap density ( D it ) and the connection between these

  7. A study of planar structures formed on the modified Al2O3 surfaces determining the topology of superconducting elements during YBa2Cu3O7- d deposition

    NASA Astrophysics Data System (ADS)

    Masterov, D. V.; Pavlov, S. A.; Parafin, A. E.; Yunin, P. A.

    2016-06-01

    We investigate the structural and electrical properties of planar superconducting structures based on the YBa2Cu3O7- d (YBCO) epitaxial films obtained by preliminary modification of the substrate surface. A special master mask was formed on the substrates, so that, at the standard YBCO film deposition onto such a substrate, an insulator layer grew in the modified areas and a superconducting film, in the unmodified ones. Thus, the planar superconducting structure of a desired topology was formed, and the YBCO deposition finished the process. Using this technique, YBCO bridges with widths of 4, 10, and 50 μm on films of different thicknesses and a planar inductive coil were formed. The superconducting transition temperature of the bridges was about 90 K, and the critical current density at a temperature of 77 K was up to 3 MA/cm2. The Q factor of the planar inductive coil at a frequency of 85 MHz was 53000 at a temperature of 77 K.

  8. Al-Al2O3-Pd junction hydrogen sensor

    NASA Astrophysics Data System (ADS)

    Okuyama, K.; Takinami, N.; Chiba, Y.; Ohshima, S.; Kambe, S.

    1994-07-01

    Al-Al2O3-Pd MIM (metal insulator metal) junctions fabricated on a glass substrate were tested as hydrogen sensors. The I-V (current versus voltage) characteristics of the junctions were measured at room temperature in a vacuum of 10-5 Torr and in H2 gas of 10-2-100 Torr. A significant increase in the current was observed upon introduction of H2 gas. This phenomenon is believed to occur due to the work function lowering of the hydrogen-absorbed Pd top electrode. The rise time was on the order of minutes, while the recovery time when hydrogen was purged was more than 20 h. However, when the junction was placed in an oxidizing ambient such as air, the recovery time was drastically reduced to the order of minutes, indicating that the device is operative as a hydrogen sensor in the atmospheric ambient. Hydrogen adsorption and desorption behavior of the Pd film was also investigated using a Pd coated quartz microbalance, and the results explained the current response of the Pd MIM junction to hydrogen in the presence of oxygen.

  9. Nanoclusters of MoO3-x embedded in an Al2O3 matrix engineered for customizable mesoscale resistivity and high dielectric strength

    NASA Astrophysics Data System (ADS)

    Tong, William M.; Brodie, Alan D.; Mane, Anil U.; Sun, Fuge; Kidwingira, Françoise; McCord, Mark A.; Bevis, Christopher F.; Elam, Jeffrey W.

    2013-06-01

    We have synthesized a material consisting of conducting metal oxide (MoO3-x) nanoclusters embedded in a high-dielectric-strength insulator (Al2O3) matrix. The resistivity of this material can be customized by varying the concentration of the MoO3-x nanoclusters. The Al2O3 protects the MoO3-x from stoichiometry change, thus conserving the number of carriers and maintaining a high dielectric strength. This composite material is grown by atomic layer deposition, a thin film deposition technique suitable for coating 3D structures. We applied these atomic layer deposition composite films to our 3D electron-optical micro electrical mechanical systems devices and greatly improved their performance.

  10. ALD of Al2O3 for Highly Improved Performance in Li-Ion Batteries

    SciTech Connect

    Dillon, A.; Jung, Y. S.; Ban, C.; Riley, L.; Cavanagh, A.; Yan, Y.; George, S.; Lee, S. H.

    2012-01-01

    Significant advances in energy density, rate capability and safety will be required for the implementation of Li-ion batteries in next generation electric vehicles. We have demonstrated atomic layer deposition (ALD) as a promising method to enable superior cycling performance for a vast variety of battery electrodes. The electrodes range from already demonstrated commercial technologies (cycled under extreme conditions) to new materials that could eventually lead to batteries with higher energy densities. For example, an Al2O3 ALD coating with a thickness of ~ 8 A was able to stabilize the cycling of unexplored MoO3 nanoparticle anodes with a high volume expansion. The ALD coating enabled stable cycling at C/2 with a capacity of ~ 900 mAh/g. Furthermore, rate capability studies showed the ALD-coated electrode maintained a capacity of 600 mAh/g at 5C. For uncoated electrodes it was only possible to observe stable cycling at C/10. Also, we recently reported that a thin ALD Al2O3 coating with a thickness of ~5 A can enable natural graphite (NG) electrodes to exhibit remarkably durable cycling at 50 degrees C. The ALD-coated NG electrodes displayed a 98% capacity retention after 200 charge-discharge cycles. In contrast, bare NG showed a rapid decay. Additionally, Al2O3 ALD films with a thickness of 2 to 4 A have been shown to allow LiCoO2 to exhibit 89% capacity retention after 120 charge-discharge cycles performed up to 4.5 V vs Li/Li+. Bare LiCoO2 rapidly deteriorated in the first few cycles. The capacity fade is likely caused by oxidative decomposition of the electrolyte at higher potentials or perhaps cobalt dissolution. Interestingly, we have recently fabricated full cells of NG and LiCoO2 where we coated both electrodes, one or the other electrode as well as neither electrode. In creating these full cells, we observed some surprising results that lead us to obtain a greater understanding of the ALD coatings. We have also recently coated a binder free LiNi0.04Mn0

  11. Synthesis and thermal characterization of Al2O3 nanoparticles

    NASA Astrophysics Data System (ADS)

    Ismardi, A.; Rosadi, O. M.; Kirom, M. R.; Syarif, D. G.

    2016-11-01

    Al2O3 nanoparticle has been successfully synthesized using sol gel method from AlCl3. The obtained nanoparticles was then characterized for grain size measurement, the size of nanoparticles was 6 nm by using surface area meter (SAM) and Transmission Electron Microscopy (TEM). The crystallinity property of the product was then checked with XRD spectroscopy, the result shows that the diffraction peaks were match with the 10-0425 JCPDS database. Thermal property of the Al2O3 nanoparticles was then studied by mixing it with engine base fluid as nanofluid. The usage of nanofluid was expected to be heat absorber and woulo increase cooling process in cooling machine. The results showed that cooling time increases when the concentration of nanofluid was increased. Finally, it is concluded that thermal property of Al2O3 was studied and applicable to be mixed with engine coolant of cooler machine to reduce cooling time process.

  12. ALD TiO2-Al2O3 Stack: An Improved Gate Dielectrics on Ga-polar GaN MOSCAPs

    DOE PAGES

    Wei, Daming; Edgar, James H.; Briggs, Dayrl P.; ...

    2014-10-15

    This research focuses on the benefits and properties of TiO2-Al2O3 nano-stack thin films deposited on Ga2O3/GaN by plasma-assisted atomic layer deposition (PA-ALD) for gate dielectric development. This combination of materials achieved a high dielectric constant, a low leakage current, and a low interface trap density. Correlations were sought between the films’ structure, composition, and electrical properties. The gate dielectrics were approximately 15 nm thick and contained 5.1 nm TiO2, 7.1 nm Al2O3 and 2 nm Ga2O3 as determined by spectroscopic ellipsometry. The interface carbon concentration, as measured by x-ray photoelectron spectroscopy (XPS) depth profile, was negligible for GaN pretreated bymore » thermal oxidation in O2 for 30 minutes at 850°C. The RMS roughness slightly increased after thermal oxidation and remained the same after ALD of the nano-stack, as determined by atomic force microscopy. The dielectric constant of TiO2-Al2O3 on Ga2O3/GaN was increased to 12.5 compared to that of pure Al2O3 (8~9) on GaN. In addition, the nano-stack's capacitance-voltage (C-V) hysteresis was small, with a total trap density of 8.74 × 1011 cm-2. The gate leakage current density (J=2.81× 10-8 A/cm2) was low at +1 V gate bias. These results demonstrate the promising potential of plasma ALD deposited TiO2/Al2O3 for serving as the gate oxide on Ga2O3/GaN based MOS devices.« less

  13. Structural study of radiolytic catalysts Ni-Ce/Al2O3 and Ni-Pt/Al2O3

    NASA Astrophysics Data System (ADS)

    Seridi, F.; Chettibi, S.; Keghouche, N.; Beaunier, P.; Belloni, J.

    2017-01-01

    Ni-Ce and Ni-Pt bimetallic catalysts supported over α-Al2O3 are synthesized by using co-impregnation method, and then reduced, each via radiolytic process or thermal H2-treatment. For Ni-Ce/Al2O3, the structural study reveals that Ce is alloyed with Ni as Ce2Ni7 nanoparticles in the radiation-reduced catalysts, while it segregates to the surface in the form of CeO2 in the H2-reduced catalysts. For Ni-Pt/Al2O3 radiolytic catalysts, Ni, Pt, NiPt and Ni3Pt nanoparticles, which size is 3.5 nm, are observed. When the radiation-reduced samples are tested in the benzene hydrogenation, they both display high conversion rate. However, the Ni-Pt/Al2O3 is more efficient than Ni-Ce/Al2O3. The performance of the catalysts is correlated with the high dispersion of the metal and the presence of intermetallic Ni-Pt and Ni-Ce phases. It is compared to that of other radiolytic monometallic/oxide catalysts of the literature.

  14. On the Structural and Chemical Characteristics of Co/Al2O3/graphene Interfaces for Graphene Spintronic Devices.

    PubMed

    Canto, Bárbara; Gouvea, Cristol P; Archanjo, Bráulio S; Schmidt, João E; Baptista, Daniel L

    2015-09-23

    We report a detailed investigation of the structural and chemical characteristics of thin evaporated Al2O3 tunnel barriers of variable thickness grown onto single-layer graphene sheets. Advanced electron microscopy and spectrum-imaging techniques were used to investigate the Co/Al2O3/graphene/SiO2 interfaces. Direct observation of pinhole contacts was achieved using FIB cross-sectional lamellas. Spatially resolved EDX spectrum profiles confirmed the presence of direct point contacts between the Co layer and the graphene. The high surface diffusion properties of graphene led to cluster-like Al2O3 film growth, limiting the minimal possible thickness for complete barrier coverage onto graphene surfaces using standard Al evaporation methods. The results indicate a minimum thickness of nominally 3 nm Al2O3, resulting in a 0.6 nm rms rough film with a maximum thickness reaching 5 nm.

  15. On the Structural and Chemical Characteristics of Co/Al2O3/graphene Interfaces for Graphene Spintronic Devices

    PubMed Central

    Canto, Bárbara; Gouvea, Cristol P.; Archanjo, Bráulio S.; Schmidt, João E.; Baptista, Daniel L.

    2015-01-01

    We report a detailed investigation of the structural and chemical characteristics of thin evaporated Al2O3 tunnel barriers of variable thickness grown onto single-layer graphene sheets. Advanced electron microscopy and spectrum-imaging techniques were used to investigate the Co/Al2O3/graphene/SiO2 interfaces. Direct observation of pinhole contacts was achieved using FIB cross-sectional lamellas. Spatially resolved EDX spectrum profiles confirmed the presence of direct point contacts between the Co layer and the graphene. The high surface diffusion properties of graphene led to cluster-like Al2O3 film growth, limiting the minimal possible thickness for complete barrier coverage onto graphene surfaces using standard Al evaporation methods. The results indicate a minimum thickness of nominally 3 nm Al2O3, resulting in a 0.6 nm rms rough film with a maximum thickness reaching 5 nm. PMID:26395513

  16. Copper pillar and memory characteristics using Al2O3 switching material for 3D architecture

    PubMed Central

    2014-01-01

    A novel idea by using copper (Cu) pillar is proposed in this study, which can replace the through-silicon-vias (TSV) technique in future three-dimensional (3D) architecture. The Cu pillar formation under external bias in an Al/Cu/Al2O3/TiN structure is simple and low cost. The Cu pillar is formed in the Al2O3 film under a small operation voltage of <5 V and a high-current-carrying conductor of >70 mA is obtained. More than 100 devices have shown tight distribution of the Cu pillars in Al2O3 film for high current compliance (CC) of 70 mA. Robust read pulse endurances of >106 cycles are observed with read voltages of −1, 1, and 4 V. However, read endurance is failed with read voltages of −1.5, −2, and −4 V. By decreasing negative read voltage, the read endurance is getting worst, which is owing to ruptured Cu pillar. Surface roughness and TiO x N y on TiN bottom electrode are observed by atomic force microscope and transmission electron microscope, respectively. The Al/Cu/Al2O3/TiN memory device shows good bipolar resistive switching behavior at a CC of 500 μA under small operating voltage of ±1 V and good data retention characteristics of >103 s with acceptable resistance ratio of >10 is also obtained. This suggests that high-current operation will help to form Cu pillar and lower-current operation will have bipolar resistive switching memory. Therefore, this new Cu/Al2O3/TiN structure will be benefited for 3D architecture in the future. PMID:25136279

  17. Research Update: Diode performance of the Pt/Al2O3/two-dimensional electron gas/SrTiO3 structure and its time-dependent resistance evolution

    NASA Astrophysics Data System (ADS)

    Moon, Taehwan; Jung, Hae Jun; Kim, Yu Jin; Park, Min Hyuk; Kim, Han Joon; Kim, Keum Do; Lee, Young Hwan; Hyun, Seung Dam; Park, Hyeon Woo; Lee, Sang Woon; Hwang, Cheol Seong

    2017-04-01

    Time domain electric pulse measurements were conducted on a capacitor consisting of a Pt film as the top electrode, atomic-layer-deposited 6.5-nm-thick amorphous Al2O3 as the dielectric layer, and two-dimensional electron gas (2DEG) at the interface between Al2O3 and SrTiO3 as the bottom electrode. The sample showed highly useful current-voltage characteristics as the selector in cross-bar array resistance switching random access memory. The long-term (order of second) variation in the leakage current when the Pt electrode was positively biased was attributed to the field-induced migration of oxygen vacancies between the interior of the Al2O3 and the 2DEG region. Relaxation of the vacancy concentration occurred even at room temperature.

  18. Electroless Ni-P-PTFE-Al2O3 Dispersion Nanocomposite Coating for Corrosion and Wear Resistance

    NASA Astrophysics Data System (ADS)

    Sharma, Ankita; Singh, A. K.

    2014-01-01

    With the aim to produce a coating having good corrosion and wear resistance alongside hardness but lesser friction coefficient, Ni-P-PTFE-Al2O3 (NiPPA) dispersion coating was developed. This was achieved by introducing nanosized polytetrafluoroethylene (PTFE) and alumina (Al2O3) in the Ni-P matrix deposited on mild steel substrate. The coating was characterized using scanning electron microscopy, energy dispersive analysis of x-ray, and x-ray diffractrometry. Microhardness and wear resistance of the coating was measured using Vicker's hardness tester and Pin-on-Disc method, respectively. The corrosion behavior was measured using electrochemical polarization and immersion tests with and without exposure in 3.5% NaCl solution. It is observed that codeposition of Al2O3 and PTFE particles with Ni-P coating results in comparatively smooth surface with nodular grains. The NiPPA coating was observed to have moderate hardness between electroless Ni-P-PTFE and Ni-P-Al2O3 coating and good wear resistance with lubricating effect. Addition of both PTFE and Al2O3 is observed to enhance corrosion resistance of the Ni-P coating. However, improvement in corrosion resistance is more due to addition of Al2O3 than PTFE. Continuous exposure for 10-20 days in corrosive solution is found to deteriorate corrosion protection properties of the coating.

  19. Fabrication of Al2O3/TiO2 multilayer mirrors for water-window attosecond pulses

    NASA Astrophysics Data System (ADS)

    Tanaka, Yuji; Murata, Masaki; Kumagai, Hiroshi; Kobayashi, Ataru; Shinagawa, Tsutomu

    2010-02-01

    Novel metal-oxide multilayer mirrors for water-window wavelengths have been already studied and then fabricated by atomic layer deposition (ALD) or atomic layer epitaxy (ALE) methods which have the self-limiting nature of the surface reactions and can control thickness on an atomic scale over large areas. The reason why metal-oxide multilayer mirrors are effective in the water-window wavelength is that they can prevent the formation of various alloys at the interface resulting in scattering loss, and the absorption of oxygen in oxides is negligible at the wavelength. In this study, high and low refractive materials were chosen to be TiO2 and Al2O3 respectively, because they can be fabricated by ALD or ALE methods and Ti L-absorption edge is located at 2.73nm. We investigated the atomic-scale growth of these films and then found that the growth rates could be constant. Moreover, Al2O3/TiO2 multilayer mirrors were fabricated by the ALE method. As a result, the soft x-ray reflectivity of the 10-bilayer mirror was 1.54%, approximately.

  20. Versatile sputtering technology for Al2O3 gate insulators on graphene.

    PubMed

    Friedemann, Miriam; Woszczyna, Mirosław; Müller, André; Wundrack, Stefan; Dziomba, Thorsten; Weimann, Thomas; Ahlers, Franz J

    2012-04-01

    We report a novel, sputtering-based fabrication method of Al2O3 gate insulators on graphene. Electrical performance of dual-gated mono- and bilayer exfoliated graphene devices is presented. Sputtered Al2O3 layers possess comparable quality to oxides obtained by atomic layer deposition with respect to a high relative dielectric constant of about 8, as well as low-hysteresis performance and high breakdown voltage. We observe a moderate carrier mobility of about 1000 cm(2) V(-1) s(-1) in monolayer graphene and 350 cm(2) V(-1) s(-1) in bilayer graphene, respectively. The mobility decrease can be attributed to the resonant scattering on atomic-scale defects, likely originating from the Al precursor layer evaporated prior to sputtering.

  1. Hierarchical structured α-Al2O3 supported S-promoted Fe catalysts for direct conversion of syngas to lower olefins.

    PubMed

    Zhou, Xiangping; Ji, Jian; Wang, Di; Duan, Xuezhi; Qian, Gang; Chen, De; Zhou, Xinggui

    2015-05-25

    Hierarchical structured α-Al2O3 is shown to be able to effectively disperse and immobilize iron species, in comparison with commercial α-Al2O3. After promotion using an appropriate amount of sulfur, iron catalysts exhibit not only enhanced Fischer-Tropsch synthesis activity and selectivity toward lower olefins, but also increased resistance against carbon deposits.

  2. Al2O3-based nanofluids: a review

    PubMed Central

    2011-01-01

    Ultrahigh performance cooling is one of the important needs of many industries. However, low thermal conductivity is a primary limitation in developing energy-efficient heat transfer fluids that are required for cooling purposes. Nanofluids are engineered by suspending nanoparticles with average sizes below 100 nm in heat transfer fluids such as water, oil, diesel, ethylene glycol, etc. Innovative heat transfer fluids are produced by suspending metallic or nonmetallic nanometer-sized solid particles. Experiments have shown that nanofluids have substantial higher thermal conductivities compared to the base fluids. These suspended nanoparticles can change the transport and thermal properties of the base fluid. As can be seen from the literature, extensive research has been carried out in alumina-water and CuO-water systems besides few reports in Cu-water-, TiO2-, zirconia-, diamond-, SiC-, Fe3O4-, Ag-, Au-, and CNT-based systems. The aim of this review is to summarize recent developments in research on the stability of nanofluids, enhancement of thermal conductivities, viscosity, and heat transfer characteristics of alumina (Al2O3)-based nanofluids. The Al2O3 nanoparticles varied in the range of 13 to 302 nm to prepare nanofluids, and the observed enhancement in the thermal conductivity is 2% to 36%. PMID:21762528

  3. Al2O3-based nanofluids: a review.

    PubMed

    Sridhara, Veeranna; Satapathy, Lakshmi Narayan

    2011-07-16

    Ultrahigh performance cooling is one of the important needs of many industries. However, low thermal conductivity is a primary limitation in developing energy-efficient heat transfer fluids that are required for cooling purposes. Nanofluids are engineered by suspending nanoparticles with average sizes below 100 nm in heat transfer fluids such as water, oil, diesel, ethylene glycol, etc. Innovative heat transfer fluids are produced by suspending metallic or nonmetallic nanometer-sized solid particles. Experiments have shown that nanofluids have substantial higher thermal conductivities compared to the base fluids. These suspended nanoparticles can change the transport and thermal properties of the base fluid. As can be seen from the literature, extensive research has been carried out in alumina-water and CuO-water systems besides few reports in Cu-water-, TiO2-, zirconia-, diamond-, SiC-, Fe3O4-, Ag-, Au-, and CNT-based systems. The aim of this review is to summarize recent developments in research on the stability of nanofluids, enhancement of thermal conductivities, viscosity, and heat transfer characteristics of alumina (Al2O3)-based nanofluids. The Al2O3 nanoparticles varied in the range of 13 to 302 nm to prepare nanofluids, and the observed enhancement in the thermal conductivity is 2% to 36%.

  4. Frustration of Negative Capacitance in Al2O3/BaTiO3 Bilayer Structure

    NASA Astrophysics Data System (ADS)

    Kim, Yu Jin; Park, Min Hyuk; Lee, Young Hwan; Kim, Han Joon; Jeon, Woojin; Moon, Taehwan; Do Kim, Keum; Jeong, Doo Seok; Yamada, Hiroyuki; Hwang, Cheol Seong

    2016-01-01

    Enhancement of capacitance by negative capacitance (NC) effect in a dielectric/ferroelectric (DE/FE) stacked film is gaining a greater interest. While the previous theory on NC effect was based on the Landau-Ginzburg-Devonshire theory, this work adopted a modified formalism to incorporate the depolarization effect to describe the energy of the general DE/FE system. The model predicted that the SrTiO3/BaTiO3 system will show a capacitance boost effect. It was also predicted that the 5 nm-thick Al2O3/150 nm-thick BaTiO3 system shows the capacitance boost effect with no FE-like hysteresis behavior, which was inconsistent with the experimental results; the amorphous-Al2O3/epitaxial-BaTiO3 system showed a typical FE-like hysteresis loop in the polarization – voltage test. This was due to the involvement of the trapped charges at the DE/FE interface, originating from the very high field across the thin Al2O3 layer when the BaTiO3 layer played a role as the NC layer. Therefore, the NC effect in the Al2O3/BaTiO3 system was frustrated by the involvement of reversible interface charge; the highly stored charge by the NC effect of the BaTiO3 during the charging period could not be retrieved during the discharging process because integral part of the polarization charge was retained within the system as a remanent polarization.

  5. Frustration of Negative Capacitance in Al2O3/BaTiO3 Bilayer Structure.

    PubMed

    Kim, Yu Jin; Park, Min Hyuk; Lee, Young Hwan; Kim, Han Joon; Jeon, Woojin; Moon, Taehwan; Kim, Keum Do; Jeong, Doo Seok; Yamada, Hiroyuki; Hwang, Cheol Seong

    2016-01-08

    Enhancement of capacitance by negative capacitance (NC) effect in a dielectric/ferroelectric (DE/FE) stacked film is gaining a greater interest. While the previous theory on NC effect was based on the Landau-Ginzburg-Devonshire theory, this work adopted a modified formalism to incorporate the depolarization effect to describe the energy of the general DE/FE system. The model predicted that the SrTiO3/BaTiO3 system will show a capacitance boost effect. It was also predicted that the 5 nm-thick Al2O3/150 nm-thick BaTiO3 system shows the capacitance boost effect with no FE-like hysteresis behavior, which was inconsistent with the experimental results; the amorphous-Al2O3/epitaxial-BaTiO3 system showed a typical FE-like hysteresis loop in the polarization - voltage test. This was due to the involvement of the trapped charges at the DE/FE interface, originating from the very high field across the thin Al2O3 layer when the BaTiO3 layer played a role as the NC layer. Therefore, the NC effect in the Al2O3/BaTiO3 system was frustrated by the involvement of reversible interface charge; the highly stored charge by the NC effect of the BaTiO3 during the charging period could not be retrieved during the discharging process because integral part of the polarization charge was retained within the system as a remanent polarization.

  6. Comparative study of the breakdown transients of thin Al2O3 and HfO2 films in MIM structures and their connection with the thermal properties of materials

    NASA Astrophysics Data System (ADS)

    Pazos, S.; Aguirre, F.; Miranda, E.; Lombardo, S.; Palumbo, F.

    2017-03-01

    In this work, the breakdown transients of A l 2 O 3 - and HfO2-based metal-insulator-metal (MIM) stacks with the same oxide thickness and identical metal electrodes were compared. Their connection with the thermal properties of the materials was investigated using alternative experimental setups. The differences and similarities between these transients in the fast and progressive breakdown regimes were assessed. According to the obtained results, A l 2 O 3 exhibits longer breakdown transients than HfO2 and requires a higher voltage to initiate a very fast current runaway across the dielectric film. This distinctive behavior is ascribed to the higher thermal conductivity of A l 2 O 3 . Overall results link the breakdown process to the thermal properties of the oxides under test rather than to dissipation effects occurring at the metal electrodes.

  7. Al2O3/SiON stack layers for effective surface passivation and anti-reflection of high efficiency n-type c-Si solar cells

    NASA Astrophysics Data System (ADS)

    Thi Thanh Nguyen, Huong; Balaji, Nagarajan; Park, Cheolmin; Triet, Nguyen Minh; Le, Anh Huy Tuan; Lee, Seunghwan; Jeon, Minhan; Oh, Donhyun; Dao, Vinh Ai; Yi, Junsin

    2017-02-01

    Excellent surface passivation and anti-reflection properties of double-stack layers is a prerequisite for high efficiency of n-type c-Si solar cells. The high positive fixed charge (Q f) density of N-rich hydrogenated amorphous silicon nitride (a-SiNx:H) films plays a poor role in boron emitter passivation. The more the refractive index ( n ) of a-SiNx:H is decreased, the more the positive Q f of a-SiNx:H is increased. Hydrogenated amorphous silicon oxynitride (SiON) films possess the properties of amorphous silicon oxide (a-SiOx) and a-SiNx:H with variable n and less positive Q f compared with a-SiNx:H. In this study, we investigated the passivation and anti-reflection properties of Al2O3/SiON stacks. Initially, a SiON layer was deposited by plasma enhanced chemical vapor deposition with variable n and its chemical composition was analyzed by Fourier transform infrared spectroscopy. Then, the SiON layer was deposited as a capping layer on a 10 nm thick Al2O3 layer, and the electrical and optical properties were analyzed. The SiON capping layer with n = 1.47 and a thickness of 70 nm resulted in an interface trap density of 4.74 = 1010 cm-2 eV-1 and Q f of -2.59 = 1012 cm-2 with a substantial improvement in lifetime of 1.52 ms after industrial firing. The incorporation of an Al2O3/SiON stack on the front side of the n-type solar cells results in an energy conversion efficiency of 18.34% compared to the one with Al2O3/a-SiNx:H showing 17.55% efficiency. The short circuit current density and open circuit voltage increase by up to 0.83 mA cm-2 and 12 mV, respectively, compared to the Al2O3/a-SiNx:H stack on the front side of the n-type solar cells due to the good anti-reflection and front side surface passivation.

  8. Impurity Enhancement of Al_2O_3/Al Adhesion

    NASA Astrophysics Data System (ADS)

    Wang, Xiao-Gang; Smith, John R.; Zhang, Wenqing; Evans, Anthony

    2003-03-01

    Our first-principles computations indicate that the clean Al_2O_3/Al interface is relatively weak - weaker than bulk Al. Fracture experiments reveal that the interface is relatively strong with observed failure in bulk Al, however. This paradox is resolved via doping effects of the common impurity C. We have found that only 1/3 of a monolayer of carbon segregated to the interface can increase the work of separation by a factor of 3. The resulting strong interface is consistent with fracture experiments. It arises due to void formation in the interface, which provides low-strain sites for the carbon to segregate to. The degree of void formation is consistent with the relatively high heat of oxide formation of Al.

  9. The impact of thickness and thermal annealing on refractive index for aluminum oxide thin films deposited by atomic layer deposition.

    PubMed

    Wang, Zi-Yi; Zhang, Rong-Jun; Lu, Hong-Liang; Chen, Xin; Sun, Yan; Zhang, Yun; Wei, Yan-Feng; Xu, Ji-Ping; Wang, Song-You; Zheng, Yu-Xiang; Chen, Liang-Yao

    2015-01-01

    The aluminum oxide (Al2O3) thin films with various thicknesses under 50 nm were deposited by atomic layer deposition (ALD) on silicon substrate. The surface topography investigated by atomic force microscopy (AFM) revealed that the samples were smooth and crack-free. The ellipsometric spectra of Al2O3 thin films were measured and analyzed before and after annealing in nitrogen condition in the wavelength range from 250 to 1,000 nm, respectively. The refractive index of Al2O3 thin films was described by Cauchy model and the ellipsometric spectra data were fitted to a five-medium model consisting of Si substrate/SiO2 layer/Al2O3 layer/surface roughness/air ambient structure. It is found that the refractive index of Al2O3 thin films decrease with increasing film thickness and the changing trend revised after annealing. The phenomenon is believed to arise from the mechanical stress in ALD-Al2O3 thin films. A thickness transition is also found by transmission electron microscopy (TEM) and SE after 900°C annealing.

  10. Head-up display using an inclined Al2O3 column array.

    PubMed

    Cho, Wen-Hao; Lee, Chao-Te; Kei, Chi-Chung; Liao, Bo-Huei; Chiang, Donyau; Lee, Cheng-Chung

    2014-02-01

    An orderly inclined Al2O3 column array was fabricated by atomic layer deposition and sequential electron beam evaporation using a hollow nanosphere template. The transmittance spectra at various angles of incidence were obtained through the use of a Perkin-Elmer Lambda 900 UV/VIS/NIR spectrometer. The inclined column array could display the image information through a scattering mechanism and was transparent at high viewing angles along the deposition plane. This characteristic of the inclined column array gives it potential for applications in head-up displays in the automotive industry.

  11. Characteristics of ethylene glycol-Al2O3 nanofluids prepared by utilizing Al2O3 nanoparticles synthesized from local bauxite

    NASA Astrophysics Data System (ADS)

    Syarif, D. G.

    2016-11-01

    Nanoparticles of Al2O3 have been synthesized from local bauxite mineral, and ethylene glycol (EG)-Al2O3 nanofluids have been prepared. Powder Al(OOH) was extracted from local bauxite using bayer process, and heated at 600°C for 3 hours to get Al2O3 nanoparticles. XRD analyses showed that the Al2O3 nanoparticles crystallizes in γ-Al2O3 with crystallite size of 4.12 nm. The specific surface area of the ACO3 nanoparticles was 296.72 m2/gr. Viscosity of the EG-Al2O3 nanofluids was temperature dependent, and decreased with increasing temperature. The viscosity of the nanofluids increased with the concentration of the Al2O3 nanoparticles. Meanwhile, Critical Heat Flux (CHF) enhancement of the nanofluids increased with the concentration of the Al2O3 nanoparticles. The largest CHF enhancement was 54% at Al2O3 concentration of 0.095 vol %.

  12. Optimization on hardness and internal stress of micro-electroformed NiCo/nano-Al2O3 composites with the constraint of low surface roughness

    NASA Astrophysics Data System (ADS)

    Hung, Shih-Yu

    2009-01-01

    In this paper, Ni-Co/nano-Al2O3 composite electroforming was used to make the metallic micro-mold for a microlens array. The microstructures require higher hardness to improve the wear resistance and lifetime. Nano-Al2O3 was applied to strengthen the Ni-Co matrix by a new micro-electroforming technique. The hardness and internal stress of Ni-Co/nano-Al2O3 composite deposit were investigated. The results showed that the hardness increased with the increasing Al2O3 content, but at the cost of deformation. Increasing the Al2O3 content in the composite was not always beneficial to the electroformed mold for microlens array fabrication. This work will concentrate on the relationship between important mechanical properties and electrolyte parameters of Ni-Co/nano-Al2O3 composite electroforming. Electrolyte parameters such as Al2O3 content, Al2O3 particle diameter, Co content, stress reducer and current density will be examined with respect to internal stress and hardness. In the present study, low stress and high hardness electroforming with the constraint of low surface roughness is carried out using SNAOA algorithm to reduce internal stress and increase service life of micro-mold during the forming process. The results show that the internal stress and the RMS roughness are only 0.54 MPa and 4.8 nm, respectively, for the optimal electrolyte parameters combination of SNAOA design.

  13. Wide band antireflective coatings Al2O3 / HfO2 / MgF2 for UV region

    NASA Astrophysics Data System (ADS)

    Winkowski, P.; Marszałek, Konstanty W.

    2013-07-01

    Deposition technology of the three layers antireflective coatings consists of hafnium compound are presented in this paper. Oxide films were deposited by means of e-gun evaporation in vacuum of 5x10-5 mbar in presence of oxygen and fluoride films by thermal evaporation. Substrate temperature was 250°C. Coatings were deposited onto optical lenses made from quartz glass (Corning HPFS). Thickness and deposition rate were controlled by thickness measuring system Inficon XTC/2. Simulations leading to optimization of thickness and experimental results of optical measurements carried during and after deposition process were presented. Physical thickness measurements were made during deposition process and were equal to 43 nm/74 nm/51 nm for Al2O3 / HfO2 / MgF2 respectively. Optimization was carried out for ultraviolet region from 230nm to the beginning of visible region 400 nm. In this region the average reflectance of the antireflective coating was less than 0.5% in the whole range of application.

  14. CO2 gas detection properties of a TIO2/Al2O3 heterostructure under UV light irradiation

    NASA Astrophysics Data System (ADS)

    Karaduman, Irmak; Demir, Mehmet; Yıldız, Dilber Esra; Acar, Selim

    2015-05-01

    Al/TiO2/p-Si and Al/TİO2/Al2O3/p-Si samples were prepared using the atomic layer deposition method (ALD) and their gas sensing properties were investigated. The electrical properties of the samples were studied using a two probe method in the temperature range 25-230 °C and at room temperature UV conditions. The TiO2/Al2O3 heterojunction sample exhibited an excellent gas sensing response to CO2 gas at room temperature and improved the effect of UV light irradiation. The results showed that heterostructures helped to improve the gas sensor properties, affected the sensing at room temperature and thus guided the design of photocatalysts. The TiO2/Al2O3 heterojunction prepared using this method can be used as a material for semiconductor gas sensors detecting poisonous gases like CO2 at room temperature with high sensitivity and selectivity.

  15. Nitridation of Al2O3 surfaces: chemical and structural change triggered by oxygen desorption.

    PubMed

    Akiyama, Toru; Saito, Yasutaka; Nakamura, Kohji; Ito, Tomonori

    2013-01-11

    We present theoretical investigations that clarify elemental nitridation processes of corundum Al2O3(0001) and (1102) surfaces. The calculations within the density functional theory framework reveal that the structures with substitutional N atoms beneath the surface are stabilized under nitridation conditions. We also find that the desorption of O atoms at the topmost layer induces outward diffusion of O atoms as well as inward diffusion of N atoms, leading to the transformation into AlN films. The kinetic Monte Carlo simulations in conjunction with density functional theory results indeed observe a dependence of these chemical and structural changes on temperature and pressure.

  16. Interfacial band configuration and electrical properties of LaAlO3/Al2O3/hydrogenated-diamond metal-oxide-semiconductor field effect transistors

    NASA Astrophysics Data System (ADS)

    Liu, J. W.; Liao, M. Y.; Imura, M.; Oosato, H.; Watanabe, E.; Tanaka, A.; Iwai, H.; Koide, Y.

    2013-08-01

    In order to search a gate dielectric with high permittivity on hydrogenated-diamond (H-diamond), LaAlO3 films with thin Al2O3 buffer layers are fabricated on the H-diamond epilayers by sputtering-deposition (SD) and atomic layer deposition (ALD) techniques, respectively. Interfacial band configuration and electrical properties of the SD-LaAlO3/ALD-Al2O3/H-diamond metal-oxide-semiconductor field effect transistors (MOSFETs) with gate lengths of 10, 20, and 30 μm have been investigated. The valence and conduction band offsets of the SD-LaAlO3/ALD-Al2O3 structure are measured by X-ray photoelectron spectroscopy to be 1.1 ± 0.2 and 1.6 ± 0.2 eV, respectively. The valence band discontinuity between H-diamond and LaAlO3 is evaluated to be 4.0 ± 0.2 eV, showing that the MOS structure acts as the gate which controls a hole carrier density. The leakage current density of the SD-LaAlO3/ALD-Al2O3/H-diamond MOS diode is smaller than 10-8 A cm-2 at gate bias from -4 to 2 V. The capacitance-voltage curve in the depletion mode shows sharp dependence, small flat band voltage, and small hysteresis shift, which implies low positive and trapped charge densities. The MOSFETs show p-type channel and complete normally off characteristics with threshold voltages changing from -3.6 ± 0.1 to -5.0 ± 0.1 V dependent on the gate length. The drain current maximum and the extrinsic transconductance of the MOSFET with gate length of 10 μm are -7.5 mA mm-1 and 2.3 ± 0.1 mS mm-1, respectively. The enhancement mode SD-LaAlO3/ALD-Al2O3/H-diamond MOSFET is concluded to be suitable for the applications of high power and high frequency electrical devices.

  17. Microstructural development of protective Al2O3 scales

    NASA Technical Reports Server (NTRS)

    Smialek, J. L.

    1984-01-01

    Microstructural characteristics of Al2O3 scales grown as protective coatings on NiCrAl alloys used in jet engines are described. The alloys were pure or doped with 0.3 percent Zr or Y and oxidized in 1 atm air at 1100 C for 0.1, 1 or 20.0 hr. The scales were then examined under a microscope. Transient epitaxial scales, formed during the 0.1 hr treatment and containing Ni, Cr and Al, consisted of a mosaic of subgrains and precipitates of different phases. The Y and Zr dopants had no effect on the nucleation site locations. The appearance of intergranular porosity at 0.1 hr was exacerbated after the 1 hr treatment. A bimodal void distribution appeared after 20 hr, when no porosity was evident. The detection of local areas of preferred orientation is taken as a spur to further studies of scale growth to gain control of the grain size or even to produce single crystal scales.

  18. The thermodynamic properties of hydrated -Al2O3 nanoparticles

    SciTech Connect

    Spencer, Elinor; Huang, Baiyu; Parker, Stewart F.; Kolesnikov, Alexander I; Ross, Dr. Nancy; Woodfield, Brian

    2013-01-01

    In this paper we report a combined calorimetric and inelastic neutron scattering (INS) study of hydrated -Al2O3 ( -alumina) nanoparticles. These complementary techniques have enabled a comprehensive evaluation of the thermodynamic properties of this technological and industrially important metal oxide to be achieved. The isobaric heat capacity (Cp) data presented herein provide further critical insights into the much-debated chemical composition of -alumina nanoparticles. Furthermore, the isochoric heat capacity (Cv) of the surface water, which is so essential to the stability of all metal-oxides at the nanoscale, has been extracted from the high-resolution INS data and differs significantly from that of ice Ih due to the dominating influence of strong surface-water interactions. This study also encompassed the analysis of four -alumina samples with differing pore diameters [4.5 (1), 13.8 (2), 17.9 (3), and 27.2 nm (4)], and the results obtained allow us to unambiguously conclude that the water content and pore size have no influence on the thermodynamic behaviour of hydrated -alumina nanoparticles.

  19. The effect of ALD-grown Al2O3 on the refractive index sensitivity of CVD gold-coated optical fiber sensors

    NASA Astrophysics Data System (ADS)

    Mandia, David J.; Zhou, Wenjun; Ward, Matthew J.; Joress, Howie; Sims, Jeffrey J.; Giorgi, Javier B.; Albert, Jacques; Barry, Seán T.

    2015-10-01

    The combined effect of nanoscale dielectric and metallic layers prepared by atomic layer deposition (ALD) and chemical vapor deposition (CVD) on the refractometric properties of tilted optical fiber Bragg gratings (TFBG) is studied. A high index intermediate layer made up of either 50 nm or 100 nm layers of Al2O3 (refractive index near 1.62) was deposited by ALD and followed by thin gold layers (30-65 nm) deposited from a known single-source gold (I) iminopyrrolidinate CVD precursor. The fabricated devices were immersed in different surrounding refractive indices (SRI) and the spectral transmission response of the TFBGs was measured. Preliminary results indicate that the addition of the dielectric Al2O3 pre-coating enhances the SRI sensitivity by up to 75% but this enhancement is highly dependent on the polarization and dielectric thickness. In fact, the sensitivity decreases by up to 50% for certain cases. These effects are discussed with support from TFBG simulations and models, by quantifying the penetration of the evanescently coupled light out of the fiber through the various coating layers. Additional characterization studies have been carried out on these samples to further correlate the optical behaviour of the coated TFBGs with the physical properties of the gold and Al2O3 layers, using atomic force microscopy x-ray photoelectron spectroscopy and an ensemble of other optical and x-ray absorption spectroscopy techniques. The purity, roughness, and morphology of gold thin films deposited by CVD onto the dielectric-TFBG surface are also provided.

  20. Cold-Sprayed Ni-Al2O3 Coatings for Applications in Power Generation Industry

    NASA Astrophysics Data System (ADS)

    Sevillano, F.; Poza, P.; Múnez, C. J.; Vezzù, S.; Rech, S.; Trentin, A.

    2013-06-01

    Cermets coatings are extensively used in energy applications both because of their high wear resistance as required, for example, in components like gas turbine sealants, and because of their specific functionality as required in solar absorbers. So far, high-temperature thermal spraying and physical vapor deposition have traditionally been used to deposit this kind of coatings. In this study, Ni-Al2O3 coatings have been deposited using a Kinetic®3000 cold-spray system starting from Ni and Al2O3 powders blend; five blends have been prepared setting the alumina content in the feedstock to 10, 25, 50, 75, and 90 wt.%. The embedded alumina ranges between a few percent weight up to 16 and 31 wt.%, while the microhardness shows a deep increase from 175 Vickers in the case of pure Ni coatings up to 338 Vickers. The spray and coating growth mechanism have been discussed, with special attention to the fragmentation of the ceramic particles during the impact. Finally, the coating behavior at high temperature was analyzed by oxidation tests performed in air at 520 °C emphasizing a good oxidation resistance that could represent a very promising basis for application in power generation systems.

  1. Nanoflake-assembled Al2O3-supported CeO2-ZrO2 as an efficient catalyst for oxidative dehydrogenation of ethylbenzene with CO2

    NASA Astrophysics Data System (ADS)

    Wang, Tehua; Guan, Xiaolin; Lu, Huiyi; Liu, Zhongwen; Ji, Min

    2017-03-01

    An Al2O3 material assembled by nanoflakes was used to prepare supported CeO2-ZrO2 catalyst via a deposition-precipitation method for oxidative dehydrogenation of ethylbenzene with CO2. Both unsupported and commercial Al2O3-supported CeO2-ZrO2 were prepared for comparison. It was found that the CeO2-ZrO2/nanoflake-assembled Al2O3 catalyst exhibited the best catalytic activity. The characterization results revealed that the slit-shape pores existing in nanoflake-assembled Al2O3 were responsible for the small particle size and high Ce/Zr surface ratio of supported CeO2-ZrO2 species. The dispersion of Ce1-xZrx(OH)4 precursors onto Al2O3 support surface during the deposition-precipitation process was proposed. The high dispersion and large numbers of surface oxygen vacancies of the CeO2-ZrO2 species on nanoflake-assembled Al2O3 contributed to the excellent catalytic performance in oxidative dehydrogenation of ethylbenzene with CO2. This kind of special Al2O3 is expected to be a promising support for preparing highly dispersed metal/metal oxide catalysts.

  2. An impedance study of complex Al/Cu-Al2O3 electrode

    NASA Astrophysics Data System (ADS)

    Denisova, J.; Katkevics, J.; Erts, D.; Viksna, A.

    2011-06-01

    Electrochemical impedance spectroscopy (EIS) was used to investigate different Cu deposition regimes on Al surface obtained by internal electrolysis and to characterize properties of fabricated electrodes. EIS experimental data confirmed that Cu deposition by internal electrolysis is realized and the complex electrode system is obtained. The main difficulty in preparation of Al/Cu electrodes is to prevent aluminium oxidation before and during electrochemical deposition of Cu particles. In this work NaCl, CH3COONa, K2SO4, mono- and diammonium citrate electrolytes were examined to determine their suitability for impedance measurements. Al/Cu-Al2O3 electrode composition was approved by equivalent circuit analysis, optical and scanning electron microscope methods. The most optimal Cu deposition mode using internal electrolysis was determined. The obtained results are promising for future electrochemical fabrication of nanostructures directly on Al surfaces by internal electrolysis.

  3. The MgO-Al2O3-SiO2 system - Free energy of pyrope and Al2O3-enstatite. [in earth mantle formation

    NASA Technical Reports Server (NTRS)

    Saxena, S. K.

    1981-01-01

    The model of fictive ideal components is used to determine Gibbs free energies of formation of pyrope and Al2O3-enstatite from the experimental data on coexisting garnet and orthopyroxene and orthopyroxene and spinel in the temperature range 1200-1600 K. It is noted that Al2O3 forms an ideal solution with MgSiO3. These thermochemical data are found to be consistent with the Al2O3 isopleths that could be drawn using most recent experimental data and with the reversed experimental data on the garnet-spinel field boundary.

  4. Catalytic sterilization of Escherichia coli K 12 on Ag/Al2O3 surface.

    PubMed

    Chen, Meixue; Yan, Lizhu; He, Hong; Chang, Qingyun; Yu, Yunbo; Qu, Jiuhui

    2007-05-01

    Bactericidal action of Al(2)O(3), Ag/Al(2)O(3) and AgCl/Al(2)O(3) on pure culture of Escherichia coli K 12 was studied. Ag/Al(2)O(3) and AgCl/Al(2)O(3) demonstrated a stronger bactericidal activity than Al(2)O(3). The colony-forming ability of E. coli was completely lost in 0.5 min on both of Ag/Al(2)O(3) and AgCl/Al(2)O(3) at room temperature in air. The configuration of the bacteria on the catalyst surface was observed using scanning electron microscopy (SEM). Reactive oxygen species (ROS) play an important role in the expression of the bactericidal activity on the surface of catalysts by assay with O(2)/N(2) bubbling and scavenger for ROS. Furthermore, the formation of CO(2) as an oxidation product could be detected by diffuse reflectance infrared Fourier transform spectroscopy (DRIFTS) and be deduced by total carbon analysis. These results strongly support that the bactericidal process on the surface of Ag/Al(2)O(3) and AgCl/Al(2)O(3) was caused by the catalytic oxidation.

  5. Activation energy of negative fixed charges in thermal ALD Al2O3

    NASA Astrophysics Data System (ADS)

    Kühnhold-Pospischil, S.; Saint-Cast, P.; Richter, A.; Hofmann, M.

    2016-08-01

    A study of the thermally activated negative fixed charges Qtot and the interface trap densities Dit at the interface between Si and thermal atomic-layer-deposited amorphous Al2O3 layers is presented. The thermal activation of Qtot and Dit was conducted at annealing temperatures between 220 °C and 500 °C for durations between 3 s and 38 h. The temperature-induced differences in Qtot and Dit were measured using the characterization method called corona oxide characterization of semiconductors. Their time dependency were fitted using stretched exponential functions, yielding activation energies of EA = (2.2 ± 0.2) eV and EA = (2.3 ± 0.7) eV for Qtot and Dit, respectively. For annealing temperatures from 350 °C to 500 °C, the changes in Qtot and Dit were similar for both p- and n-type doped Si samples. In contrast, at 220 °C the charging process was enhanced for p-type samples. Based on the observations described in this contribution, a charging model leading to Qtot based on an electron hopping process between the silicon and Al2O3 through defects is proposed.

  6. Investigation of neutron converters for production of optically stimulated luminescence (OSL) neutron dosimeters using Al 2O 3:C

    NASA Astrophysics Data System (ADS)

    Mittani, J. C. R.; da Silva, A. A. R.; Vanhavere, F.; Akselrod, M. S.; Yukihara, E. G.

    2007-07-01

    This paper presents the optically stimulated luminescence (OSL) properties of neutron dosimeters in powder and in the form of pellets prepared with a mixture of Al 2O 3:C and neutron converters. The neutron converters investigated were high density polyethylene (HDPE), lithium fluoride (LiF), lithium fluoride 95% enriched with 6Li ( 6LiF), lithium carbonate 95% enriched with 6Li ( 6Li 2CO 3), boric acid enriched with 99% of 10B (H310BO) and gadolinium oxide (Gd 2O 3). The proportion of Al 2O 3:C and neutron converter in the mixture was varied to optimize the total OSL signal and neutron sensitivity. The neutron sensitivity and dose-response were determined for the OSL dosimeters using a bare 252Cf source and compared to the response of Harshaw TLD-600 and TLD-700 dosimeters ( 6LiF:Mg,Ti and 7LiF:Mg,Ti). The results demonstrate the possibility of developing an OSL dosimeter made of Al 2O 3:C powder and neutron converter with a neutron sensitivity (defined as the ratio between the 60Co equivalent gamma dose and the reference neutron absorbed dose) and neutron-gamma discrimination comparable to the TLD-600/TLD-700 combination. It was shown that the shape of the OSL decay curves varied with the type of the neutron converter, demonstrating the influence of the energy deposition mechanism and ionization density on the OSL process in Al 2O 3:C.

  7. Stacked Graphene-Al2O3 Nanopore Sensors for Sensitive Detection of DNA and DNA-Protein Complexes

    PubMed Central

    Venkatesan, Bala Murali; Estrada, David; Banerjee, Shouvik; Jin, Xiaozhong; Dorgan, Vincent E.; Bae, Myung-Ho; Aluru, Narayana R.; Pop, Eric; Bashir, Rashid

    2012-01-01

    We report the development of a multilayered graphene-Al2O3 nanopore platform for the sensitive detection of DNA and DNA-protein complexes. Graphene-Al2O3 nanolaminate membranes are formed by sequentially depositing layers of graphene and Al2O3 with nanopores being formed in these membranes using an electron-beam sculpting process. The resulting nanopores are highly robust, exhibit low electrical noise (significantly lower than nanopores in pure graphene), are highly sensitive to electrolyte pH at low KCl concentrations (attributed to the high buffer capacity of Al2O3) and permit the electrical biasing of the embedded graphene electrode, thereby allowing for three terminal nanopore measurements. In proof-of-principle biomolecule sensing experiments, the folded and unfolded transport of single DNA molecules and RecA coated DNA complexes could be discerned with high temporal resolution. The process described here also enables nanopore integration with new graphene based structures, including nanoribbons and nanogaps, for single molecule DNA sequencing and medical diagnostic applications. PMID:22165962

  8. Cooperative upconversion as the gain-limiting factor in Er doped miniature Al2O3 optical waveguide amplifiers

    NASA Astrophysics Data System (ADS)

    Kik, P. G.; Polman, A.

    2003-05-01

    Erbium doped Al2O3 waveguide amplifiers were fabricated using two different doping methods, namely Er ion implantation into sputter deposited Al2O3, and co-sputtering from an Er2O3/Al2O3 target. Although the Er concentration in both materials is almost identical (0.28 and 0.31 at. %), the amplifiers show a completely different behavior. Upon pumping with 1.48 μm, the co-sputtered waveguide shows a strong green luminescence from the 4S3/2 level, indicating efficient cooperative upconversion in this material. This is confirmed by pump power dependent measurements of the optical transmission at 1.53 μm and the spontaneous emission at 1.53 and 0.98 μm. All measurements can be accurately modeled using a set of rate equations that include first order and second order cooperative upconversion. The first order cooperative upconversion coefficient C24 is found to be 3.5×10-16 cm3 s-1 in the co-sputtered material, two orders of magnitude higher than the value obtained in Er implanted Al2O3 of 4.1×10-18 cm3 s-1. It is concluded that the co-sputtering process results in a strongly inhomogeneous atomic scale spatial distribution of the Er ions. As a result, the co-sputtered waveguides do not show optical gain, while the implanted waveguides do.

  9. Nanoporous Gold Nanoparticles and Au/Al2O3 Hybrid Nanoparticles with Large Tunability of Plasmonic Properties.

    PubMed

    Rao, Wenye; Wang, Dong; Kups, Thomas; Baradács, Eszter; Parditka, Bence; Erdélyi, Zoltán; Schaaf, Peter

    2017-02-22

    Nanoporous gold nanoparticles (NPG-NPs) with controlled particle size and pore size are fabricated via a combination of solid-state dewetting and a subsequent dealloying process. Because of the combined effects of size and porosity, the NPG-NPs exhibit greater plasmonic tunability and significantly higher local field enhancement as compared to solid NPs. The effects of the nanoscale porosity and pore size on the optical extinction are investigated for the NPG-NPs with different particle sizes experimentally and theoretically. The influences of both porosity and pore size on the plasmonic properties are very complicated and clearly different for small particles with dominated dipole mode and large particles with dominated quadrupole mode. Au/Al2O3 hybrid porous NPs with controlled porosity and composition ratio are fabricated through plasma-enhanced atomic layer deposition of Al2O3 into the porous structure. In the Au/Al2O3 hybrid porous NPs, both Au and Al2O3 components are bicontinuously percolated over the entire structure. A further red shift of the plasmon peak is observed in the hybrid NPs due to the change of the environmental refractive index. The high tunability of the plasmonic resonances in the NPG-NPs and the hybrid porous NPs can be very useful for many applications in sensing biological and organic molecules.

  10. Influence of Al2O3 on the ionic conductivity of plasticized PVC-PEG blend polymer electrolytes

    NASA Astrophysics Data System (ADS)

    Ravindran, D.; Vickraman, P.

    2016-05-01

    Polymer electrolytes with PVC-PEG blend as host matrix and LiClO4 as dopant salt was prepared through conventional solution casting method. To enhance the conductivity propylene carbonate (PC) was used as plasticizer. The influence of ceramic filler Al2O3 on the conductivity of the electrolyte films were studied by varying the (PVC: Al2O3) ratio. The films were subjected to XRD, complex impedance analysis and SEM analysis. The XRD studies reveal a marginal increase in the amorphous phase of the electrolyte films due to the incorporation of filler. The AC impedance analysis shows the dependency of ionic conductivity on the content (wt %) of filler and exhibit a maximum at 4 wt% filler. The SEM analysis depicts the occurrence of phase separation in electrolyte which is attributed to the poor solubility of polymer PVC in the liquid electrolyte.

  11. Study on the Mechanical Properties of Heat-Treated Electroless NiP Coatings Reinforced with Al2O3 Nano Particles

    NASA Astrophysics Data System (ADS)

    Karthikeyan, S.; Vijayaraghavan, L.; Madhavan, S.; Almeida, A.

    2016-05-01

    This work reports the effects of electroless co-deposition of Al2O3 nanoparticles and NiP to obtain a NiP-Al2O3 coating on the structure and mechanical properties of the composite coatings. The effects of annealing heat treatments at 373 K, 473 K, 573 K, and 673 K (100 °C, 200 °C, 300 °C, and 400 °C) on the structure and properties of the coatings were evaluated. The as-deposited coatings are a mixture of crystalline and amorphous phases that tend to crystallize during heat treatment. Heat treatment at higher temperatures causes the precipitation of the Ni3P phase. The mechanical properties of as-deposited and heat-treated NiP-Al2O3 coatings were evaluated using depth-sensing indentation tests performed at loads of 200 mN. The incorporation of Al2O3 nanoparticles induces strengthening of the NiP coating by dispersion. Heat treatment of the NiP-Al2O3 coatings induced crystallization of the amorphous phase with the formation of nanosized grains and the precipitation of Ni3P. Consequently, there is an increase in the hardness and Young's modulus of the coatings to 15.4 ± 0.5 and 227 ± 2.8 GPa, respectively, in a combined hardening effect induced by dispersion of the Al2O3 nanoparticles and crystallization and precipitation during heat treatment.

  12. Low-temperature roll-to-roll atmospheric atomic layer deposition of Al₂O₃ thin films.

    PubMed

    Ali, Kamran; Choi, Kyung-Hyun

    2014-12-02

    The Al2O3 thin films deposition through conventional ALD systems is a well-established process. The process under low temperatures has been studied by few research groups. In this paper, we report on the detailed study of low-temperature Al2O3 thin films deposited via a unique in-house built system of roll-to-roll atmospheric atomic layer deposition (R2R-AALD) using a multiple-slit gas source head. Al2O3 thin films have been grown on polyethylene terephthalate substrates under a very low-temperature zone of room temperature to 50 °C and working pressure of 750 Torr, which is very near to atmospheric pressure (760 Torr). Al2O3 thin films with superior properties were achieved in the temperature range of the ALD window. An appreciable growth rate of 0.97 Å/cycle was observed for the films deposited at 40 °C. The films have good morphological features with a very low average arithmetic roughness (Ra) of 0.90 nm. The films also showed good chemical, electrical, and optical characteristics. It was observed that the film characteristics improve with the increase in deposition temperature to the range of the ALD window. The fabrication of Al2O3 films was confirmed by X-ray photoelectron spectroscopy (XPS) analysis with the appearance of Al 2p, Al 2s, and O 1s peaks at the binding energies of 74, 119, and 531 eV, respectively. The chemical composition was also supported by the Fourier transform infrared spectroscopy (FTIR). The fabricated Al2O3 films demonstrate good insulating properties and optical transmittance of more than 85% in the visible region. The results state that Al2O3 thin films can be effectively fabricated through the R2R-AALD system at temperatures as low as 40 °C.

  13. In situ studies of butyronitrile adsorption and hydrogenation on Pt/Al2O3 using attenuated total reflection infrared spectroscopy.

    PubMed

    Ortiz-Hernandez, Ivelisse; Williams, Christopher T

    2007-03-13

    The adsorption and hydrogenation of butyronitrile (BN) in hexane on a 5% Pt/Al2O3 catalyst has been studied using in situ attenuated total reflection infrared (ATR-IR) spectroscopy. ATR-IR measurements were conducted on thin ( approximately 10 mum) films of catalyst deposited on Ge wave guides. Multivariate analysis involving classical lease-squares (CLS) and partial least-squares (PLS) modeling was used to aid in the interpretation of the spectroscopic data. During the adsorption of BN over a concentration range from 4 to 40 mM in hexane, no clear evidence for adsorbed N-bound end-on species could be detected. However, a feature at approximately 1635-1640 cm-1 indicated the presence of an adsorbed imine species, with the C=N group existing in a tilted configuration involving a strong degree of pi interaction with the surface. This assignment is bolstered by the detection of N-H stretching bands that are consistent with imine vibrations. This imine-type intermediate is very prominent and shows transient behavior in the presence of solution-phase hydrogen, suggesting that, once formed, it can be converted into amine products that adsorb on the catalyst surface. Evidence for amine formation was observed in the form of N-H stretching and NH2 bending vibrations, with assignments confirmed through comparison studies of butylamine adsorption under identical conditions. Comparisons between Pt/Al2O3 and Al2O3 suggest that there may be some adsorption of these amines on the support surface. The mechanistic implications with regard to heterogeneous nitrile hydrogenation on transition metals under mild conditions are briefly discussed in light of these findings.

  14. Surface properties of Al2O3-YSZ ceramic composites modified by a combination of biomimetic coatings and electric polarization

    NASA Astrophysics Data System (ADS)

    Nagai, Akiko; Ma, Chufan; Kishi, Shigeki; Inuzuka, Masahiro; Nakamura, Miho; Horiuchi, Naohiro; Nishio, Keishi; Yamashita, Kimihiro

    2012-12-01

    Alumina-containing yttria-stabilized zirconia composite (Al-YSZ) has a higher flexural strength than YSZ, although Al-YSZ cannot directly bond with bone tissues. To expand the biomedical applications of Al-YSZ, new surface modifications were investigated to improve the bioactivity in the present study. The combination of a biomimetic coatings method using an alternate soaking technique and electric polarization treatment was performed on Al-YSZ. The crystalline phases of the starting Al-YSZ sintered disks were assigned to tetragonal ZrO2 and α-Al2O3 phases. The analyses of the electrical properties were carried out using complex impedance and thermally stimulated depolarized current measurements for polarization treatments. Our results indicate that the stored charges in Al-YSZ via polarization decreased in YSZ, because of the added alumina, while the calcium phosphate film deposited by the biomimetic coatings method on polarized Al-YSZ was observed to be thicker than the non-polarized film. The coating method would be suitable for the complex geometry of biomaterials. As a result, polarized Al-YSZ fabricated using an alternate soaking process is expected to be useful as a biomaterial under load-bearing conditions.

  15. CVD Fiber Coatings for Al2O3/NiAl Composites

    NASA Technical Reports Server (NTRS)

    Boss, Daniel E.

    1995-01-01

    While sapphire-fiber-reinforced nickel aluminide (Al2O3/NiAl) composites are an attractive candidate for high-temperature structures, the significant difference in the coefficient of thermal expansion between the NiAl matrix and the sapphire fiber creates substantial residual stresses in the composite. This study seeks to produce two fiber-coating systems with the potential to reduce the residual stresses in the sapphire/NiAl composite system. Chemical vapor deposition (CVD) was used to produce both the compensating and compliant-fiber coatings for use in sapphire/NiAl composites. A special reactor was designed and built to produce the FGM and to handle the toxic nickel precursors. This process was successfully used to produce 500-foot lengths of fiber with coating thicknesses of approximately 3 microns, 5 microns, and 10 microns.

  16. Sonochemical asymmetric hydrogenation of isophorone on proline modified Pd/Al2O3 catalysts.

    PubMed

    Mhadgut, Shilpa C; Bucsi, Imre; Török, Marianna; Török, Béla

    2004-04-21

    The sonochemical asymmetric hydrogenation of isophorone (3,3,5-trimethyl-2-cyclohexenone) by proline-modified Pd/Al2O3 catalysts is described; presonication of a commercial Pd/Al2O3-proline catalytic system resulted in highly enhanced enantioselectivities (up to 85% ee).

  17. Metastability in the MgAl2O4-Al2O3 System

    DOE PAGES

    Wilkerson, Kelley R.; Smith, Jeffrey D.; Hemrick, James G.

    2014-07-22

    Aluminum oxide must take a spinel form ( γ-Al2O3) at elevated temperatures in order for extensive solid solution to form between MgAl2O4 and α-Al2O3. The solvus line between MgAl2O4 and Al2O3 has been defined at 79.6 wt% Al2O3 at 1500°C, 83.0 wt% Al2O3 at 1600°C, and 86.5 wt% Al2O3 at 1700°C. A metastable region has been defined at temperatures up to 1700°C which could have significant implications for material processing and properties. Additionally, initial processing could have major implications on final chemistry. The spinel solid solution region has been extended to form an infinite solid solution with Al2O3 at elevatedmore » temperatures. A minimum in melting at 1975°C and a chemistry of 96 wt% Al2O3 rather than a eutectic is present, resulting in no eutectic crystal formation during solidification.« less

  18. Influence of Al2O3 sol concentration on the microstructure and mechanical properties of Cu-Al2O3 composite coatings

    NASA Astrophysics Data System (ADS)

    Wei, Xiaojin; Yang, Zhendi; Tang, Ying; Gao, Wei

    2015-03-01

    Copper (Cu) is widely used as electrical conducting and contacting material. However, Cu is soft and does not have good mechanical properties. In order to improve the hardness and wear resistance of Cu, sol-enhanced Cu-Al2O3 nanocomposite coatings were electroplated by adding a transparent Al oxide (Al2O3) sol into the traditional electroplating Cu solution. It was found that the microstructure and mechanical properties of the nanocomposite coatings were largely influenced by the Al2O3 sol concentration. The results show that the Al2O3 nanoparticle reinforced the composite coatings, resulting in significantly improved hardness and wear resistance in comparison with the pure Cu coatings. The coating prepared at the sol concentration of 3.93 mol/L had the best microhardness and wear resistance. The microhardness has been improved by 20% from 145.5 HV (Vickers hardness number) of pure Cu coating to 173.3 HV of Cu-Al2O3 composite coatings. The wear resistance was also improved by 84%, with the wear volume loss dropped from 3.2 × 10-3 mm3 of Cu coating to 0.52 × 10-3 mm3 of composite coatings. Adding excessive sol to the electrolyte deteriorated the properties.

  19. Effect of Al2O3 Concentration on Density and Structure of (CaO-SiO2)-xAl2O3 Slag

    NASA Astrophysics Data System (ADS)

    Rajavaram, Ramaraghavulu; Kim, Hyelim; Lee, Chi-Hoon; Cho, Won-Seung; Lee, Chi-Hwan; Lee, Joonho

    2017-03-01

    The effect of Al2O3 concentration on the density and structure of CaO-SiO2-Al2O3 slag was investigated at multiple Al2O3 mole percentages and at a fixed CaO/SiO2 ratio of 1. The experiments were conducted in the temperature range of 2154 K to 2423 K (1881 °C to 2150 °C) using the aerodynamic levitation technique. In order to understand the relationship between density and structure, structural analysis of the silicate melts was carried out using Raman spectroscopy. The density of each slag sample investigated in this study decreased linearly with increasing temperature. When the Al2O3 content was less than 15 mole pct, density decreased with increasing Al2O3 content due to the coupling of Si (Al), whereas above 20 mole pct density of the slag increased due to the role of Al3+ ion as a network modifier.

  20. Formation of gamma(sup prime)-Ni3Al via the Peritectoid Reaction: gamma + beta (+ Al2O3)=gamma(sup prime)(+ Al2O3)

    NASA Technical Reports Server (NTRS)

    Copeland, Evan

    2008-01-01

    The activities of Al and Ni were measured using multi-cell Knudsen effusion-cell mass spectrometry (multi-cell KEMS), over the composition range 8-32 at.%Al and temperature range T=1400-1750 K in the Ni-Al-O system. These measurements establish that equilibrium solidification of gamma(sup prime)-Ni3Al-containing alloys occurs by the eutectic reaction, L (+ Al2O3)=gamma + Beta(+ Al2O3), at 1640 +/- 1 K and a liquid composition of 24.8 +/- 0.2 at.%al (at an unknown oxygen content). The {gamma + Beta (+Al2O3} phase field is stable over the temperature range 1633-1640 K, and gamma(sup prime)-Ni3Al forms via the peritectoid, gamma + Beta (+ Al2O3)=gamma(sup prime) (+ Al2O3), at 1633 +/- 1 K. This behavior is consistent with the current Ni-Al phase diagram and a new diagram is proposed. This new Ni-Al phase diagram explains a number of unusual steady-state solidification structures reported previously and provides a much simpler reaction scheme in the vicinity of the gamma(sup prime)-Ni2Al phase field.

  1. Formation of gamma'-Ni3Al via the Peritectoid Reaction: gamma plus beta (+Al2O3) equals gamma'(+Al2O3)

    NASA Technical Reports Server (NTRS)

    Copland, Evan

    2008-01-01

    The activities of Al and Ni were measured using multi-cell Knudsen effusion-cell mass spectrometry (multi-cell KEMS), over the composition range 8 - 32 at.%Al and temperature range T = 1400 - 1750 K in the Ni-Al-O system. These measurements establish that equilibrium solidification of gamma'-Ni3Al-containing alloys occurs by the eutectic reaction, L (+ Al2O3) = gamma + beta (+ Al2O3), at 1640 plus or minus 1 K and a liquid composition of 24.8 plus or minus 0.2 at.%Al (at an unknown oxygen content). The {gamma + beta + Al2O3} phase field is stable over the temperature range 1633 - 1640 K, and gamma'-Ni3Al forms via the peritectiod, gamma + beta (+ Al2O3) = gamma'(+ Al2O3), at 1633 plus or minus 1 K. This behavior is inconsistent with the current Ni-Al phase diagram and a new diagram is proposed. This new Ni-Al phase diagram explains a number of unusual steady state solidification structures reported previously and provides a much simpler reaction scheme in the vicinity of the gamma'-Ni3Al phase field.

  2. Interface behavior of Al2O3/Ti joints produced by liquid state bonding.

    PubMed

    Lemus-Ruiz, J; Guevara-Laureano, A O; Zarate-Medina, J; Arellano-Lara, A; Ceja-Cárdenas, L

    2015-04-01

    In this work we study brazing of Al2O3 to Ti with biocompatibility properties, using a Au-foil as joining element. Al2O3 was produced by sintering of powder at 1550°C. Al2O3 samples were coated with a 2 and 4μm thick of Mo layer and then stacked with Ti. Al2O3-Mo/Au/Ti combinations were joined at 1100°C in vacuum. Successful joining of Mo-Al2O3 to Ti was observed. Interface shows the formation of a homogeneous diffusion zone. Mo diffused inside Au forming a concentration line. Ti3Au and TiAu phases were observed.

  3. Properties of slow traps of ALD Al2O3/GeOx/Ge nMOSFETs with plasma post oxidation

    NASA Astrophysics Data System (ADS)

    Ke, M.; Yu, X.; Chang, C.; Takenaka, M.; Takagi, S.

    2016-07-01

    The realization of Ge gate stacks with a small amount of slow trap density as well as thin equivalent oxide thickness and low interface state density (Dit) is a crucial issue for Ge CMOS. In this study, we examine the properties of slow traps, particularly the location of slow traps, of Al2O3/GeOx/n-Ge and HfO2/Al2O3/GeOx/n-Ge MOS interfaces with changing the process and structural parameters, formed by atomic layer deposition (ALD) of Al2O3 and HfO2/Al2O3 combined with plasma post oxidation. It is found that the slow traps can locate in the GeOx interfacial layer, not in the ALD Al2O3 layer. Furthermore, we study the time dependence of channel currents in the Ge n-MOSFETs with 5-nm-thick Al2O3/GeOx/Ge gate stacks, with changing the thickness of GeOx, in order to further clarify the position of slow traps. The time dependence of the current drift and the effective time constant of slow traps do not change among the MOSFETs with the different thickness GeOx, demonstrating that the slow traps mainly exist near the interfaces between Ge and GeOx.

  4. Pressure drop and heat transfer of Al2O3-H2O nanofluids through silicon microchannels

    NASA Astrophysics Data System (ADS)

    Wu, Xinyu; Wu, Huiying; Cheng, Ping

    2009-10-01

    Experimental investigations were performed on the single-phase flow and heat transfer characteristics through the silicon-based trapezoidal microchannels with a hydraulic diameter of 194.5 µm using Al2O3-H2O nanofluids with particle volume fractions of 0, 0.15% and 0.26% as the working fluids. The effects of the Reynolds number, Prandtl number and nanoparticle concentration on the pressure drop and convective heat transfer were investigated. Experimental results show that the pressure drop and flow friction of the nanofluids increased slightly when compared with that of the pure water, while the Nusselt number increased considerably. At the same pumping power, using nanofluids instead of pure water caused a reduction in the thermal resistance. It was also found that the Nusselt number increased with the increase in the particle concentration, Reynolds number and Prandtl number. Based on the experimental data, the dimensionless correlations for the flow friction and heat transfer of Al2O3-H2O nanofluids through silicon microchannels were proposed for the first time. The agglomeration and deposition of nanoparticles in the silicon microchannels were also examined in this paper. It was found that the Al2O3 nanoparticles deposited on the inner wall of microchannels more easily with increasing wall temperature, and once boiling commenced, there is a severe deposition and adhesion of nanoparticles to the inner wall, which makes the boiling heat transfer of nanofluids in silicon microchannels questionable.

  5. Improvement of oxidation resistance of copper by atomic layer deposition

    NASA Astrophysics Data System (ADS)

    Chang, M. L.; Cheng, T. C.; Lin, M. C.; Lin, H. C.; Chen, M. J.

    2012-10-01

    Al2O3 films were deposited by the atomic layer deposition (ALD) technique onto pure copper at temperatures in the range 100-200 °C. The chemical composition, microstructure, and mechanic properties of the ALD-deposited Al2O3 films were systematically analyzed. The variations in the film characteristics with substrate temperature were observed. Oxidation trials revealed that 20-nm-thick Al2O3 films deposited at a substrate temperature as low as 100 °C suppress oxidative attack on pure copper. The Al2O3 films also showed excellent durability of adhesion strength, according to predictions using the Coffin-Manson model based on the results of accelerated temperature cycling tests. These features indicate that ALD-deposited Al2O3 film is a very promising candidate to be a protective coating for pure copper.

  6. Self-powered narrowband p-NiO/n-ZnO nanowire ultraviolet photodetector with interface modification of Al2O3

    NASA Astrophysics Data System (ADS)

    Chen, Zhao; Li, Borui; Mo, Xiaoming; Li, Songzhan; Wen, Jian; Lei, Hongwei; Zhu, Ziqiang; Yang, Guang; Gui, Pengbin; Yao, Fang; Fang, Guojia

    2017-03-01

    All inorganic, self-powered, narrowband, and rapid response p-NiO/n-ZnO nanowire (NW) ultraviolet (UV) photodetectors were fabricated and investigated with Al2O3 as an interface modification layer. Al2O3 films grown by atomic layer deposition can greatly suppress the surface defects on ZnO NWs and improve the p-NiO/n-ZnO NW interface. The photo-response of the photodetector in the 430-500 nm wavelength range was greatly inhibited and the full-width at half-maximum of the response spectrum was less than 30 nm. A large responsivity of 1.4 mA/W was achieved under a 380 nm UV irradiation (0.36 mW/cm2) at zero bias and the response time of the device was less than 0.04 s. Such a simple interface modification method might promote the developing of ZnO NW based narrowband photodetectors.

  7. Substrate reactivity as the origin of Fermi level pinning at the Cu2O/ALD-Al2O3 interface

    NASA Astrophysics Data System (ADS)

    Deuermeier, Jonas; Bayer, Thorsten J. M.; Yanagi, Hiroshi; Kiazadeh, Asal; Martins, Rodrigo; Klein, Andreas; Fortunato, Elvira

    2016-04-01

    The reduction of a Cu2O layer on copper by exposure to TMA during the atomic layer deposition of Al2O3 has recently been reported. (Gharachorlou et al 2015 ACS Appl. Mater. Interfaces 7 16428-16439). The study presented here analyzes a similar process, leading to the reduction of a homogeneous Cu2O thin film, which allows for additional observations. Angle-resolved in situ x-ray photoelectron spectroscopy confirms the localization of metallic copper at the interface. The evaluation of binding energy shifts reveals the formation of a Cu2O/Cu Schottky barrier, which gives rise to Fermi level pinning in Cu2O. An initial enhancement of the ALD growth per cycle (GPC) is only observed for bulk Cu2O samples and is thus related to lattice oxygen, originating from regions lying deeper than just the first few layers of the surface. The oxygen out-take from the substrate is limited to the first few cycles, which is found to be due to a saturated copper reduction, rather than the oxygen diffusion barrier of Al2O3.

  8. Patterning of GaAs and Si substrates using self-organized Al2O3 templates and epitaxial growth of GaAs nanostructures

    NASA Astrophysics Data System (ADS)

    Kumari, Archana; Hatch, John; Kwon, Jaesuk; Zhang, Xin; Fraser, Everett; Kim, Chae Hyun; Zeng, Hao; Luo, Hong

    2013-03-01

    Reactive ion etching is used with Al2O3 templates to pattern SiO2 films deposited on GaAs and Si substrates. The technique allows nanopatterning of substrates without photo or e-beam lithography. The SiO2 film pattern consists of holes of about 80 nm diameter with a pitch of about 100 nm. GaAs nanostructures are grown on the patterned substrates by molecular beam epitaxy. The observed arrays of nanostructures closely follow the patterns on SiO2. Several types of structures are observed depending on the growth conditions, including pillars with flat hexagonal tops and pyramidal triangular tops. Characterization of the structures will be discussed. This work was supported by NSF DMR1006286. Intelligent Epitaxy Technology, Inc., 1250 E. Collins Blvd., Richardson, TX 75081, USA

  9. EXAFS Characterization of Dendrimer-Derived Pt/γ-Al2O3

    NASA Astrophysics Data System (ADS)

    Siani, A.; Alexeev, O. S.; Williams, C. T.; Ploehn, H. J.; Amiridis, M. D.

    2007-02-01

    The various steps involved in the preparation of a Pt/γ-Al2O3 material using hydroxyl-terminated generation four (G4OH) PAMAM dendrimers as templates were monitored by EXAFS. The results indicate that Cl ligands in the Pt precursors (H2PtCl6 and K2PtCl4) were partially replaced by aquo ligands upon hydrolysis to form [PtCl3(H2O)3]+ and [PtCl2(H2O)2] species. After interaction of such species with G4OH, Cl ligands from the first coordination shell of Pt were further replaced by nitrogen atoms from the dendrimer interior, indicating the complexation of Pt with the dendrimer. This process was accompanied by a transfer of the electron density from the dendrimer to Pt, indicating that the former plays the role of a ligand. Following treatment of the H2PtCl6/G4OH and K2PtCl4/G4OH composites with NaBH4, no substantial changes were detecteded in the electronic or coordination environment of Pt, and no formation of metal nanoparticles was observed. However, when the reduction treatment was performed with H2, the formation of extremely small Pt clusters incorporating no more than 4 Pt atoms was observed. These Pt species remained strongly bonded to the dendrimer and their nuclearity depends on the length of the H2 treatment. Formation of Pt nanoparticles with an average diameter of approximately 10 Å was finally observed after the deposition of H2PtCl6/G4OH on γ-Al2O3 and drying, suggesting that their formation may be related to the collapse of the dendrimer structure. The Pt nanoparticles formed appear to have high mobility, since subsequent thermal treatment in O2/H2 led to further sintering.

  10. Proactive control of the metal-ceramic interface behavior of thermal barrier coatings using an artificial alpha-Al2O 3 layer

    NASA Astrophysics Data System (ADS)

    Su, Yi-Feng

    The reliability and life of thermal barrier coatings (TBCs) used in the hottest sections of advanced aircraft engines and power generation systems are largely dictated by: (1) the ability of a metallic bond coating to form an adherent thermally grown oxide (TGO) at the metal-ceramic interface and (2) the rate at which the TGO grows upon oxidation. It is postulated that a thin alpha-Al2O3 layer, if it could be directly deposited on a Ni-based alloy, will guide the alloy surface to form a TGO that is more tenacious and slower growing than what is attainable with state-of-the-art bond coatings. A chemical vapor deposition (CVD) process was used to directly deposit an alpha-Al2O3 layer on the surface of a single crystal Ni-bases superalloy. The layer was 150 nm thick, and consisted of small columnar grains (˜100 to 200 nm) with alpha-Al2O 3 as the major phase with a minute amount of theta-Al2O 3. Within 0.5 h of oxidation at 1150°C, the resulting TGO formed on the alloy surface underwent significant lateral grain growth. Consequently, within this time scale, the columnar nature of the TGO became well established. After 50 h, a network of ridges was clearly observed on the TGO surface instead of equiaxed grains typically observed on uncoated alloy surface. Comparison of the TGO morphologies observed with and without the CVD-Al2O 3 layer suggested that the transient oxidation of the alloy surface was considerably reduced. The alloy coated with the CVD-Al2O 3 layer also produced a much more adherent and slow growing TGO in comparison to that formed on the uncoated alloy surface. The CVD-Al2O 3 layer also improved its spallation resistance. Without the CVD-Al 2O3 layer, more than 50% of the TGO spalled off the alloy surface after 500 h in oxidation with significant wrinkling of the TGO that remained on the alloy surface. In contrast, the TGO remained intact with the CVD-Al2O3 layer after the 500 h exposure. Furthermore, the CVD layer significantly reduced the degree of

  11. Effects of mechanical properties of polymer on ceramic-polymer composite thick films fabricated by aerosol deposition.

    PubMed

    Kwon, Oh-Yun; Na, Hyun-Jun; Kim, Hyung-Jun; Lee, Dong-Won; Nam, Song-Min

    2012-05-22

    Two types of ceramic-polymer composite thick films were deposited on Cu substrates by an aerosol deposition process, and their properties were investigated to fabricate optimized ceramic-based polymer composite thick films for application onto integrated substrates with the advantage of plasticity. When polymers with different mechanical properties, such as polyimide (PI) and poly(methyl methacrylate) (PMMA), are used as starting powders together with α-Al2O3 powder, two types of composite films are formed with different characteristics - surface morphologies, deposition rates, and crystallite size of α-Al2O3. Through the results of micro-Vickers hardness testing, it was confirmed that the mechanical properties of the polymer itself are associated with the performances of the ceramic-polymer composite films. To support and explain these results, the microstructures of the two types of polymer powders were observed after planetary milling and an additional modeling test was carried out. As a result, we could conclude that the PMMA powder is distorted by the impact of the Al2O3 powder, so that the resulting Al2O3-PMMA composite film had a very small amount of PMMA and a low deposition rate. In contrast, when using PI powder, the Al2O3-PI composite film had a high deposition rate due to the cracking of PI particles. Consequently, it was revealed that the mechanical properties of polymers have a considerable effect on the properties of the resulting ceramic-polymer composite thick films.

  12. Interface Defect Hydrogen Depassivation and Capacitance-Voltage Hysteresis of Al2O3/InGaAs Gate Stacks.

    PubMed

    Tang, Kechao; Palumbo, Felix Roberto; Zhang, Liangliang; Droopad, Ravi; McIntyre, Paul C

    2017-03-01

    We investigate the effects of pre- and postatomic layer deposition (ALD) defect passivation with hydrogen on the trap density and reliability of Al2O3/InGaAs gate stacks. Reliability is characterized by capacitance-voltage hysteresis measurements on samples prepared using different fabrication procedures and having different initial trap densities. Despite its beneficial capability to passivate both interface and border traps, a final forming gas (H2/N2) anneal (FGA) step is correlated with a significant hysteresis. This appears to be caused by hydrogen depassivation of defects in the gate stack under bias stress, supported by the observed bias stress-induced increase of interface trap density, and strong hydrogen isotope effects on the measured hysteresis. On the other hand, intentional air exposure of the InGaAs surface prior to Al2O3 ALD increases the initial interface trap density (Dit) but considerably lowers the hysteresis.

  13. Sulfur passivation for the formation of Si-terminated Al2O3/SiGe(0 0 1) interfaces

    NASA Astrophysics Data System (ADS)

    Sardashti, Kasra; Hu, Kai-Ting; Tang, Kechao; Park, Sangwook; Kim, Hyonwoong; Madisetti, Shailesh; McIntyre, Paul; Oktyabrsky, Serge; Siddiqui, Shariq; Sahu, Bhagawan; Yoshida, Noami; Kachian, Jessica; Kummel, Andrew

    2016-03-01

    Sulfur passivation is used to electrically and chemically passivate the silicon-germanium (SiGe) surfaces before and during the atomic layer deposition (ALD) of aluminum oxide (Al2O3). The electrical properties of the interfaces were examined by variable frequency capacitance-voltage (C-V) spectroscopy. Interface compositions were determined by angle-resolved X-ray photoelectron spectroscopy (AR-XPS). The sulfur adsorbs to a large fraction of surface sites on the SiGe(0 0 1) surface, protecting the surface from deleterious surface reactions during processing. Sulfur passivation (a) improved the air stability of the cleaned surfaces prior to ALD, (b) increased the stability of the surface during high-temperature deposition, and (c) increased the Al2O3 ALD nucleation density on SiGe, thereby lowering the leakage current. S passivation suppressed formation of Gesbnd O bonds at the interface, leaving the majority of the Al2O3-SiGe interface terminated with direct Sisbnd Osbnd Al bonding.

  14. Resistance switching of epitaxial VO2/Al2O3 heterostructure at room temperature induced by organic liquids

    NASA Astrophysics Data System (ADS)

    Yang, Mengmeng; Yang, Yuanjun; Hong, Bin; Huang, Haoliang; Hu, Sixia; Dong, Yongqi; Wang, Haibo; He, Hao; Zhao, Jiyin; Liu, Xuguang; Luo, Zhenlin; Li, Xiaoguang; Zhang, Haibin; Gao, Chen

    2015-03-01

    We studied using organic liquids (cyclohexane, n-butanol, and ethylene glycol) to modulate the transport properties at room temperature of an epitaxial VO2 film on a VO2/Al2O3 heterostructure. The resistance of the VO2 film increased when coated with cyclohexane or n-butanol, with maximum changes of 31% and 3.8%, respectively. In contrast, it decreased when coated with ethylene glycol, with a maximum change of -7.7%. In all cases, the resistance recovered to its original value after removing the organic liquid. This organic-liquid-induced reversible resistance switching suggests that VO2 films can be used as organic molecular sensors.

  15. Nano-oxide thin films deposited via atomic layer deposition on microchannel plates.

    PubMed

    Yan, Baojun; Liu, Shulin; Heng, Yuekun

    2015-01-01

    Microchannel plate (MCP) as a key part is a kind of electron multiplied device applied in many scientific fields. Oxide thin films such as zinc oxide doped with aluminum oxide (ZnO:Al2O3) as conductive layer and pure aluminum oxide (Al2O3) as secondary electron emission (SEE) layer were prepared in the pores of MCP via atomic layer deposition (ALD) which is a method that can precisely control thin film thickness on a substrate with a high aspect ratio structure. In this paper, nano-oxide thin films ZnO:Al2O3 and Al2O3 were prepared onto varied kinds of substrates by ALD technique, and the morphology, element distribution, structure, and surface chemical states of samples were systematically investigated by scanning electron microscopy (SEM), energy-dispersive X-ray spectroscopy (EDS), X-ray diffraction (XRD), and X-ray photoemission spectroscopy (XPS), respectively. Finally, electrical properties of an MCP device as a function of nano-oxide thin film thickness were firstly studied, and the electrical measurement results showed that the average gain of MCP was greater than 2,000 at DC 800 V with nano-oxide thin film thickness approximately 122 nm. During electrical measurement, current jitter was observed, and possible reasons were preliminarily proposed to explain the observed experimental phenomenon.

  16. Thermoluminescence studies of γ-irradiated Al2O3:Ce3+ phosphor

    NASA Astrophysics Data System (ADS)

    Reddy, S. Satyanarayana; Nagabhushana, K. R.; Singh, Fouran

    2016-07-01

    Pure and Ce3+ doped Al2O3 phosphors were synthesized by solution combustion method. The synthesized samples were characterized by X-ray diffraction (XRD) and its shows α-phase of Al2O3. Crystallite size was estimated by Williamson-Hall (W-H) method and found to be 49, 59 and 84 nm for pure, 0.1 mol% and 1 mol% Ce3+ doped Al2O3 respectively. Trace elemental analysis of undoped Al2O3 shows impurities viz. Fe, Cr, Mn, Mg, Ti, etc. Photoluminescence (PL) spectra of Al2O3:Ce3+ shows emission at 367 nm and excitation peak at 273 nm, which are corresponding to 5D → 4F and 4F → 5D transitions respectively. PL intensity decreases with concentration up to 0.4 mol%, beyond this mol% PL intensity increases with doping concentration up to 2 mol%. Thermoluminescence (TL) studies of γ-rayed pure and Ce3+ doped Al2O3 have been studied. Two well resolved TL glow peaks at 457.5 K and 622 K were observed in pure Al2O3. Additional glow peak at 566 K was observed in Al2O3:Ce3+. Maximum TL intensity was observed for Al2O3:Ce3+ (0.1 mol%) beyond this TL intensity decreases with increasing Ce3+ concentration. Computerized glow curve deconvolution (CGCD) method was used to resolve the multiple peaks and to calculate TL kinetic parameters. Thermoluminescence emission (TLE) spectra of pure Al2O3 glow peaks (457.5 K and 622 K) shows sharp emission at 694 nm and two small humps at 672 nm and 709 nm. The sharp peak at 696 nm corresponds to Cr3+ impurity of 2Eg → 4A2g transition of R lines and 713 nm hump is undoubtedly belongs to Cr3+ emission of near neighbor pairs. The emission at 672 nm is characteristic of Mn4+ impurity ions of 2E → 4A2 transition. TLE of Al2O3:Ce3+ (0.1 mol%) shows additional broad emission at 412 nm corresponds to F-centers. Linearity is observed in the dose range 20-500 Gy in Al2O3:Ce3+ (1 mol%).

  17. Minimizing of the boundary friction coefficient in automotive engines using Al2O3 and TiO2 nanoparticles

    NASA Astrophysics Data System (ADS)

    Ali, Mohamed Kamal Ahmed; Xianjun, Hou; Elagouz, Ahmed; Essa, F. A.; Abdelkareem, Mohamed A. A.

    2016-12-01

    Minimizing of the boundary friction coefficient is critical for engine efficiency improvement. It is known that the tribological behavior has a major role in controlling the performance of automotive engines in terms of the fuel consumption. The purpose of this research is an experimental study to minimize the boundary friction coefficient via nano-lubricant additives. The tribological characteristics of Al2O3 and TiO2 nano-lubricants were evaluated under reciprocating test conditions to simulate a piston ring/cylinder liner interface in automotive engines. The nanoparticles were suspended in a commercially available lubricant in a concentration of 0.25 wt.% to formulate the nano-lubricants. The Al2O3 and TiO2 nanoparticles had sizes of 8-12 and 10 nm, respectively. The experimental results have shown that the boundary friction coefficient reduced by 35-51% near the top and bottom dead center of the stroke (TDC and BDC) for the Al2O3 and TiO2 nano-lubricants, respectively. The anti-wear mechanism was generated via the formation of protective films on the worn surfaces of the ring and liner. These results will be a promising approach for improving fuel economy in automotive.

  18. Free standing TiO2 nanotube array electrodes with an ultra-thin Al2O3 barrier layer and TiCl4 surface modification for highly efficient dye sensitized solar cells

    NASA Astrophysics Data System (ADS)

    Gao, Xianfeng; Guan, Dongsheng; Huo, Jingwan; Chen, Junhong; Yuan, Chris

    2013-10-01

    Dye sensitized solar cells were fabricated with free standing TiO2 nanotube (TNT) array films, which were prepared by template assisted atomic layer deposition (ALD) with precise wall thickness control. Efforts to improve the photovoltaic performance were made by using Al2O3 barrier layer coating in conjunction with TiCl4 surface modification. An Al2O3 thin layer was deposited on the TNT electrode by ALD to serve as the charge recombination barrier, but it suffers from the drawback of decreasing the photoelectron injection from dye into TiO2 when the barrier layer became too thick. With the TiCl4 treatment in combination with optimal thickness coating, this problem could be avoided. The co-surface treated electrode presents superior surface property with low recombination rate and good electron transport property. A high conversion efficiency of 8.62% is obtained, which is about 1.8 times that of the device without surface modifications.Dye sensitized solar cells were fabricated with free standing TiO2 nanotube (TNT) array films, which were prepared by template assisted atomic layer deposition (ALD) with precise wall thickness control. Efforts to improve the photovoltaic performance were made by using Al2O3 barrier layer coating in conjunction with TiCl4 surface modification. An Al2O3 thin layer was deposited on the TNT electrode by ALD to serve as the charge recombination barrier, but it suffers from the drawback of decreasing the photoelectron injection from dye into TiO2 when the barrier layer became too thick. With the TiCl4 treatment in combination with optimal thickness coating, this problem could be avoided. The co-surface treated electrode presents superior surface property with low recombination rate and good electron transport property. A high conversion efficiency of 8.62% is obtained, which is about 1.8 times that of the device without surface modifications. Electronic supplementary information (ESI) available: UV-Vis spectra of desorbed N719 dyes from

  19. Oxidation of the GaAs semiconductor at the Al2O3/GaAs junction.

    PubMed

    Tuominen, Marjukka; Yasir, Muhammad; Lång, Jouko; Dahl, Johnny; Kuzmin, Mikhail; Mäkelä, Jaakko; Punkkinen, Marko; Laukkanen, Pekka; Kokko, Kalevi; Schulte, Karina; Punkkinen, Risto; Korpijärvi, Ville-Markus; Polojärvi, Ville; Guina, Mircea

    2015-03-14

    Atomic-scale understanding and processing of the oxidation of III-V compound-semiconductor surfaces are essential for developing materials for various devices (e.g., transistors, solar cells, and light emitting diodes). The oxidation-induced defect-rich phases at the interfaces of oxide/III-V junctions significantly affect the electrical performance of devices. In this study, a method to control the GaAs oxidation and interfacial defect density at the prototypical Al2O3/GaAs junction grown via atomic layer deposition (ALD) is demonstrated. Namely, pre-oxidation of GaAs(100) with an In-induced c(8 × 2) surface reconstruction, leading to a crystalline c(4 × 2)-O interface oxide before ALD of Al2O3, decreases band-gap defect density at the Al2O3/GaAs interface. Concomitantly, X-ray photoelectron spectroscopy (XPS) from these Al2O3/GaAs interfaces shows that the high oxidation state of Ga (Ga2O3 type) decreases, and the corresponding In2O3 type phase forms when employing the c(4 × 2)-O interface layer. Detailed synchrotron-radiation XPS of the counterpart c(4 × 2)-O oxide of InAs(100) has been utilized to elucidate the atomic structure of the useful c(4 × 2)-O interface layer and its oxidation process. The spectral analysis reveals that three different oxygen sites, five oxidation-induced group-III atomic sites with core-level shifts between -0.2 eV and +1.0 eV, and hardly any oxygen-induced changes at the As sites form during the oxidation. These results, discussed within the current atomic model of the c(4 × 2)-O interface, provide insight into the atomic structures of oxide/III-V interfaces and a way to control the semiconductor oxidation.

  20. Surface-Mechanical Properties of Electrodeposited Cu-Al2O3 Composite Coating and Effects of Processing Parameters

    NASA Astrophysics Data System (ADS)

    Maharana, H. S.; Ashok, Akarapu; Pal, S.; Basu, A.

    2016-01-01

    Cu/Al2O3 composite coatings were prepared from acidic copper sulfate bath containing ultrafine Al2O3 particles by direct current plating method to increase the surface-mechanical property of Cu for its possible use as electrical contact. Effect of ultrafine Al2O3 particle concentration in electrolyte and deposition current density on the surface-mechanical properties of the coatings was investigated. Coatings were characterized by scanning electron microscopy and X-ray diffraction (XRD) techniques for the purpose of surface morphology and phase study. From XRD data, crystallographic texture of the coating was also analyzed. To study the mechanical properties, microhardness testing, adhesion, and wear test were carried out. Improved hardness of the resultant coatings was observed and was correlated with the wt pct of ultrafine particle in the Cu matrix, matrix structure, and crystallographic orientation. Better wear property of the composite coating was also reported from the wear plot and wear track morphology. Altogether, better coating property was attributed toward finer matrix, hard reinforced phase, and preferred orientation in selected conditions. Electrical conductivity of the coating was affected by grain size and second-phase concentration, and the values obtained were in the usable range required for electrical applications.

  1. H2 dissociation on γ-Al2O3 supported Cu/Pd atoms: A DFT investigation

    NASA Astrophysics Data System (ADS)

    Wang, Hongtao; Chen, Lijuan; Lv, Yongkang; Ren, Ruipeng

    2014-01-01

    The density functional theory (DFT) was applied to investigate the promotion effects of single Cu and Pd atoms deposition on γ-Al2O3 surface for the adsorption and dissociation of H2 molecule, which is of importance for many catalysis reactions. Due to its strong Lewis acidity, the tri-coordinated surface Al site was identified to be the most preferable site for both Cu and Pd location. The inner surface electrons rearrangement from O to Al of alumina was found to be a key factor to stabilize the Cu/Pd adsorption configurations, rather than the total electrons transfer between Cu/Pd and the surface. It was found that the supported Cu and Pd atoms are more active for H2 dissociation than the clean γ-Al2O3 surface. The supported Pd is more active than Cu for H2 dissociation. In addition, the metal-support interaction of the γ-Al2O3 supported Cu/Pd atoms are more favored than the metal-metal interaction of the metal clusters for the H2 dissociated adsorption.

  2. Tribological evaluation of an Al2O3-SiO2 ceramic fiber candidate for high temperature sliding seals

    NASA Technical Reports Server (NTRS)

    Dellacorte, Christopher; Steinetz, Bruce

    1994-01-01

    A test program to determine the relative sliding durability of an alumina-silica candidate ceramic fiber for high temperature sliding seal applications is described. Pin-on-disk tests were used to evaluate the potential seal material by sliding a tow or bundle of the candidate ceramic fiber against a superalloy test disk. Friction was measured during the tests and fiber wear, indicated by the extent of fibers broken in the tow or bundle, was measured at the end of each test. Test variables studied included ambient temperatures from 25 to 900 C, loads from 1.3 to 21.2 N, and sliding velocities from 0.025 to 0.25 m/sec. In addition, the effects of fiber diameter and elastic modulus on friction and wear were measured. Thin gold films deposited on the superalloy disk surface were evaluated in an effort to reduce friction and wear of the fibers. In most cases, wear increased with test temperature. Friction ranged from 0.36 at 500 C and low velocity (0.025 m/sec) to over 1.1 at 900 C and high velocity (0.25 m/sec). The gold films resulted in satisfactory lubrication of the fibers at 25 C. At elevated temperatures diffusion of substrate elements degraded the films. These results indicate that the alumina-silica (Al2O3-SiO2) fiber is a good candidate material system for high temperature sliding seal applications. More work is needed to reduce friction.

  3. Production of hydrogen by autothermal reforming of propane over Ni/delta-Al2O3.

    PubMed

    Lee, Hae Ri; Lee, Kwi Yeon; Park, Nam Cook; Shin, Jae Soon; Moon, Dong Ju; Lee, Byung Gwon; Kim, Young Chul

    2006-11-01

    The performance of Ni/delta-Al2O3 catalyst in propane autothermal reforming (ATR) for hydrogen production was investigated in the present study. The catalysts were characterized using XRD, TEM, and SEM. The activity of the Ni/delta-Al2O3 catalyst manufactured by the water-alcohol method was better than those of the catalysts manufactured by the impregnation and chemical reduction methods. The Ni/delta-Al2O3 catalysts were modified by the addition of promoters such as Mg, La, Ce, and Co, in order to improve their stability and yield. Hydrogen production was the largest for the Ni-Co-CeO2/Al2O3, catalyst.

  4. Oxidation of Al2O3 continuous fiber-reinforced/NiAl composites

    NASA Technical Reports Server (NTRS)

    Doychak, J.; Nesbitt, J. A.; Noebe, R. D.; Bowman, R. R.

    1992-01-01

    The 1200 C and 1300 C isothermal and cyclic oxidation behavior of Al2O3 continuous fiber-reinforced/NiAl composites were studied. Oxidation resulted in formation of Al2O3 external scales in a similar manner as scales formed on monolithic NiAl. The isothermal oxidation of an Al2O3/NiAl composite resulted in oxidation of the matrix along the fiber/matrix interface near the fiber ends. This oxide acted as a wedge between the fiber and the matrix, and, under cyclic oxidation conditions, led to further oxidation along the fiber lengths and eventual cracking of the composite. The oxidation behavior of composites in which the Al2O3 fibers were sputter coated with nickel prior to processing was much more severe. This was attributed to open channels around the fibers which formed during processing, most likely as a result of the diffusion of the nickel coating into the matrix.

  5. Microstructure and Mechanical Properties of Al2O3 / A336 Compsite by Low Pressure Infiltratrion

    DTIC Science & Technology

    2011-08-01

    clear and bonds directly with matrix and fiber. It is confirmed by the presence of the γ-Al2O3, MgO from diffraction peaks in the XRD pattern (Fig 4...and EDS (Fig. 3(b),(c)). It suggests that γ-Al2O3, MgO can be produced as results of the interfacial reaction between the Al liquid and the SiO2...results of the reaction between the α-Al2O3 and the MgO , i.e. α-Al2O3+ MgO →MgAl2O4, It was noticed that MgAl2O4 improve wettability, but decrease

  6. Realizing a facile and environmental-friendly fabrication of high-performance multi-crystalline silicon solar cells by employing ZnO nanostructures and an Al2O3 passivation layer

    PubMed Central

    Chen, Hong-Yan; Lu, Hong-Liang; Sun, Long; Ren, Qing-Hua; Zhang, Hao; Ji, Xin-Ming; Liu, Wen-Jun; Ding, Shi-Jin; Yang, Xiao-Feng; Zhang, David Wei

    2016-01-01

    Nowadays, the multi-crystalline silicon (mc-Si) solar cells dominate the photovoltaic industry. However, the current acid etching method on mc-Si surface used by firms can hardly suppress the average reflectance value below 25% in the visible light spectrum. Meanwhile, the nitric acid and the hydrofluoric contained in the etching solution is both environmental unfriendly and highly toxic to human. Here, a mc-Si solar cell based on ZnO nanostructures and an Al2O3 spacer layer is demonstrated. The eco-friendly fabrication is realized by low temperature atomic layer deposition of Al2O3 layer as well as ZnO seed layer. Moreover, the ZnO nanostructures are prepared by nontoxic and low cost hydro-thermal growth process. Results show that the best passivation quality of the n+ -type mc-Si surface can be achieved by balancing the Si dangling bond saturation level and the negative charge concentration in the Al2O3 film. Moreover, the average reflectance on cell surface can be suppressed to 8.2% in 400–900 nm range by controlling the thickness of ZnO seed layer. With these two combined refinements, a maximum solar cell efficiency of 15.8% is obtained eventually. This work offer a facile way to realize the environmental friendly fabrication of high performance mc-Si solar cells. PMID:27924911

  7. Realizing a facile and environmental-friendly fabrication of high-performance multi-crystalline silicon solar cells by employing ZnO nanostructures and an Al2O3 passivation layer

    NASA Astrophysics Data System (ADS)

    Chen, Hong-Yan; Lu, Hong-Liang; Sun, Long; Ren, Qing-Hua; Zhang, Hao; Ji, Xin-Ming; Liu, Wen-Jun; Ding, Shi-Jin; Yang, Xiao-Feng; Zhang, David Wei

    2016-12-01

    Nowadays, the multi-crystalline silicon (mc-Si) solar cells dominate the photovoltaic industry. However, the current acid etching method on mc-Si surface used by firms can hardly suppress the average reflectance value below 25% in the visible light spectrum. Meanwhile, the nitric acid and the hydrofluoric contained in the etching solution is both environmental unfriendly and highly toxic to human. Here, a mc-Si solar cell based on ZnO nanostructures and an Al2O3 spacer layer is demonstrated. The eco-friendly fabrication is realized by low temperature atomic layer deposition of Al2O3 layer as well as ZnO seed layer. Moreover, the ZnO nanostructures are prepared by nontoxic and low cost hydro-thermal growth process. Results show that the best passivation quality of the n+ -type mc-Si surface can be achieved by balancing the Si dangling bond saturation level and the negative charge concentration in the Al2O3 film. Moreover, the average reflectance on cell surface can be suppressed to 8.2% in 400–900 nm range by controlling the thickness of ZnO seed layer. With these two combined refinements, a maximum solar cell efficiency of 15.8% is obtained eventually. This work offer a facile way to realize the environmental friendly fabrication of high performance mc-Si solar cells.

  8. Studies on the Surface Morphology and Orientation of CeO2 Films Deposited by Pulsed Laser Ablation

    NASA Astrophysics Data System (ADS)

    Develos, Katherine; Kusunoki, Masanobu; Ohshima, Shigetoshi

    1998-11-01

    We studied the surface morphology and orientation of CeO2 films grown by pulsed laser ablation (PLA) on r-cut (1\\=102) Al2O3 substrates and evaluated the effects of predeposition annealing conditions of Al2O3 and film thickness of CeO2. The annealing of Al2O3 substrates improves the smoothness of the surface and performing this in high vacuum leads to better crystallinity and orientation of deposited CeO2 films compared to those annealed in oxygen. A critical value of the film thickness was found beyond which the surface roughness increases abruptly. Atomic force microscopy (AFM) study showed that the surface of CeO2 films is characterized by a mazelike pattern. Increasing the film thickness leads to the formation of larger islands which cause the increase in the surface roughness of the films. The areal density and height of these islands increased with film thickness.

  9. Characterization of interface states in Al2O3/AlGaN/GaN structures for improved performance of high-electron-mobility transistors

    NASA Astrophysics Data System (ADS)

    Hori, Y.; Yatabe, Z.; Hashizume, T.

    2013-12-01

    We have investigated the relationship between improved electrical properties of Al2O3/AlGaN/GaN metal-oxide-semiconductor high-electron-mobility transistors (MOS-HEMTs) and electronic state densities at the Al2O3/AlGaN interface evaluated from the same structures as the MOS-HEMTs. To evaluate Al2O3/AlGaN interface state densities of the MOS-HEMTs, two types of capacitance-voltage (C-V) measurement techniques were employed: the photo-assisted C-V measurement for the near-midgap states and the frequency dependent C-V characteristics for the states near the conduction-band edge. To reduce the interface states, an N2O-radical treatment was applied to the AlGaN surface just prior to the deposition of the Al2O3 insulator. As compared to the sample without the treatment, the N2O-radical treated Al2O3/AlGaN/GaN structure showed smaller frequency dispersion of the C-V curves in the positive gate bias range. The state densities at the Al2O3/AlGaN interface were estimated to be 1 × 1012 cm-2 eV-1 or less around the midgap and 8 × 1012 cm-2 eV-1 near the conduction-band edge. In addition, we observed higher maximum drain current at the positive gate bias and suppressed threshold voltage instability under the negative gate bias stress even at 150 °C. Results presented in this paper indicated that the N2O-radical treatment is effective both in reducing the interface states and improving the electrical properties of the Al2O3/AlGaN/GaN MOS-HEMTs.

  10. Al/Al2O3 Metal Matrix Composites (MMCs) and Macrocomposites for Armor Applications

    DTIC Science & Technology

    2013-09-01

    ceramics (high hardness, high stiffness, low thermal expansion). In this study , Al/Al2O3 MMCs with alumina particle contents ranging from 12% to 46% were...expansion). In this study , Al/Al2O3 MMCs with alumina particle contents ranging from 12% to 46% were fabricated by different processing approaches...the different MMCs. The matrix alloy, alumina volume fraction, densities, mechanical properties , and thermal properties are summarized in Table 2

  11. Tb3+ ion doping into Al2O3: Solubility limit and luminescence properties

    NASA Astrophysics Data System (ADS)

    Onishi, Yuya; Nakamura, Toshihiro; Adachi, Sadao

    2016-11-01

    Tb3+-activated Al2O3 phosphors with a molar ratio of \\text{Al}:\\text{Tb} = (1 - x):x are synthesized by metal organic decomposition (x = 0-0.15) and subsequent calcination at T c = 200-1200 °C for 1 h in air. The material properties of the synthesized phosphors are investigated by X-ray diffraction (XRD), photoluminescence (PL) analyses, PL excitation spectroscopy, and luminescence lifetime measurements. At x = 0.015, the metastable phase of γ-Al2O3 is obtained by calcination at T c ˜ 300-1050 °C and a mixture of γ, θ, and α phases at T c ˜ 1050-1150 °C. The high-temperature stable phase of α-Al2O3 is obtained only at T c ≥ 1150 °C. Below T c ˜ 300 °C, the XRD data suggest the formation of boehmite (AlOOH). The solubility limit of Tb3+ in α-Al2O3 is also clearly determined to be x ˜ 0.015 (1.5%). The PL decay time of the Tb3+ green emission in α-Al2O3 is ˜1.1 ms for x < 0.015 and slowly decreases with further increase in x (Tb3+). The schematic energy-level diagram of Tb3+ in α-Al2O3 is proposed for a better understanding of the present phosphor system. Finally, the temperature dependence of the PL intensity is examined between T = 20 and 450 K, yielding quenching energies of E q ˜ 0.28 eV (α-Al2O3 and γ-Al2O3).

  12. Postperovskite phase equilibria in the MgSiO3-Al2O3 system.

    PubMed

    Tsuchiya, Jun; Tsuchiya, Taku

    2008-12-09

    We investigate high-P,T phase equilibria of the MgSiO(3)-Al(2)O(3) system by means of the density functional ab initio computation methods with multiconfiguration sampling. Being different from earlier studies based on the static substitution properties with no consideration of Rh(2)O(3)(II) phase, present calculations demonstrate that (i) dissolving Al(2)O(3) tends to decrease the postperovskite transition pressure of MgSiO(3) but the effect is not significant ( approximately -0.2 GPa/mol% Al(2)O(3)); (ii) Al(2)O(3) produces the narrow perovskite+postperovskite coexisting P,T area (approximately 1 GPa) for the pyrolitic concentration (x(Al2O3) approximately 6 mol%), which is sufficiently responsible to the deep-mantle D'' seismic discontinuity; (iii) the transition would be smeared (approximately 4 GPa) for the basaltic Al-rich composition (x(Al2O3) approximately 20 mol%), which is still seismically visible unless iron has significant effects; and last (iv) the perovskite structure spontaneously changes to the Rh(2)O(3)(II) with increasing the Al concentration involving small displacements of the Mg-site cations.

  13. Studies on oxidation and deuterium permeation behavior of a low temperature α-Al2O3-forming Fesbnd Crsbnd Al ferritic steel

    NASA Astrophysics Data System (ADS)

    Xu, Yu-Ping; Zhao, Si-Xiang; Liu, Feng; Li, Xiao-Chun; Zhao, Ming-Zhong; Wang, Jing; Lu, Tao; Hong, Suk-Ho; Zhou, Hai-Shan; Luo, Guang-Nan

    2016-08-01

    To evaluate the capability of Fesbnd Crsbnd Al ferritic steels as tritium permeation barrier in fusion systems, the oxidation behavior together with the permeation behavior of a Fesbnd Crsbnd Al steel was investigated. Gas driven permeation experiments were performed. The permeability of the oxidized Fesbnd Crsbnd Al steel was obtained and a reduced activation ferritic/martensitic steel CLF-1 was used as a comparison. In order to characterize the oxide layer, SEM, XPS, TEM, HRTEM were used. Al2O3 was detected in the oxide film by XPS, and HRTEM showed that Al2O3 in the α phase was found. The formation of α-Al2O3 layer at a relatively low temperature may result from the formation of Cr2O3 nuclei.

  14. Impacts of Annealing Conditions on the Flat Band Voltage of Alternate La2O3/Al2O3 Multilayer Stack Structures

    NASA Astrophysics Data System (ADS)

    Feng, Xing-Yao; Liu, Hong-Xia; Wang, Xing; Zhao, Lu; Fei, Chen-Xi; Liu, He-Lei

    2016-09-01

    The mechanism of flat band voltage (VFB) shift for alternate La2O3/Al2O3 multilayer stack structures in different annealing condition is investigated. The samples were prepared for alternate multilayer structures, which were annealed in different conditions. The capacitance-voltage (C-V) measuring results indicate that the VFB of samples shift negatively for thinner bottom Al2O3 layer, increasing annealing temperature or longer annealing duration. Simultaneously, the diffusion of high- k material to interfaces in different multilayer structures and annealing conditions is observed by X-ray photoelectron spectroscopy (XPS). Based on the dipole theory, a correlation between the diffusion effect of La towards bottom Al2O3/Si interface and VFB shift is found. Without changing the dielectric constant k of films, VFB shift can be manipulated by controlling the single-layer cycles and annealing conditions of alternate high- k multilayer stack.

  15. New battery strategies with a polymer/Al2O3 separator

    NASA Astrophysics Data System (ADS)

    Park, Kyusung; Cho, Joon Hee; Shanmuganathan, Kadhiravan; Song, Jie; Peng, Jing; Gobet, Mallory; Greenbaum, Steven; Ellison, Christopher J.; Goodenough, John B.

    2014-10-01

    A low-cost, thin, flexible, and mechanically robust alkali-ion electrolyte separator is shown to allow fabrication of a safe rechargeable alkali-ion battery with alternative cathode strategies. A Na-ion battery with an insertion host as cathode and a Li-ion battery with a redox flow-through cathode are demonstrated to cycle without significant fade. The separator membrane is a composite of Al2O3 particles and cross-linked ethylene-oxide chains; it can be fabricated at low cost into a large-area thin membrane that blocks dendrites from an alkali-metal anode. To block a soluble ferrocene redox molecule from crossing from the cathode side to the anode in a Li-ion battery with a redox-flow cathode, a thin mixed Li+/electronic-conducting film has been added to the cathode side of the composite separator. An osmosis issue was minimized by balancing concentrations of solutes on the two sides of the separator where the cathode side contains a soluble redox molecule.

  16. Internal photoemission in Ag-Al2O3-Al junctions

    NASA Technical Reports Server (NTRS)

    Guedes, J. M. P.; Slayman, C. W.; Gustafson, T. K.; Jain, R. K.

    1979-01-01

    The magnitude of the photon-induced current in Ag-Al2O3-Al metal-oxide-metal junctions has been studied as a function of photon energy and angle of incident radiation. Photocurrents were theoretically analyzed on the basis of a modified vacuum photoemission model (Jain, 1975; Slayman et al., to be published). Optical constants previously reported in the literature (Irani et al., 1971; Ehnrereich et al., 1963) were used to calculate the true spatial generation rate in Ag and Al as a function of the angle, polarization of incident radiation, and film thickness. Results were found to be in very good agreement with experimentally determined values for a tunable dye laser with a KDP doubling crystal pumped by a Q-switched Nd:YAG laser with a LiIO3 doubling crystal. The system provided risetimes of 50 ns or less and peak powers of 10 W. Under short circuit conditions, the photoresponse to incident power was linear up to available power densities of 10 kW/sq cm. Quantum efficiencies of about 0.1% at zero-bias, near 3.8 eV under P polarization, were typically observed.

  17. Supermagnetism in discontinuous CoFe/Al2O3 multilayers

    NASA Astrophysics Data System (ADS)

    Bedanta, Subhankar; Kleemann, Wolfgang

    2012-06-01

    An ensemble of nanoparticles in which the interparticle magnetic interactions are sufficiently weak shows superparamagnetic (SPM) behavior as described by the Néel-Brown model. On the contrary, when inter-particle interactions are non-negligible, the system eventually shows collective behavior, which overcomes the individual anisotropy properties of the particles. At sufficiently strong interactions a magnetic nanoparticle ensemble can show superspin glass (SSG) properties similar to those of atomic spin glass systems in bulk. With further increase in concentration, but still below physical percolation, sufficiently strong interactions can be experienced to form a superferromagnetic (SFM) state. SFM domains in a non-percolated nanoparticle assembly are expected to be similar to conventional FM domains in a continuous film, with the decisive difference that the atomic spins are replaced by the superspins of the single-domain nanoparticles. In this article, we show that by varying the nominal thickness tn of the magnetic component in granular multilayers [Co80Fe20(tn)/Al2O3(3nm)]10 different types of "supermagnetism", such as superparamagnetism, superspin glass and superferromagnetism can be observed.

  18. Biocompatibility and bioactivity enhancement of Ce stabilized ZrO(2) doped HA coatings by controlled porosity change of Al(2) O(3) substrates.

    PubMed

    Sima, Felix; Ristoscu, Carmen; Caiteanu, Diana; Mihailescu, Cristian N; Stefan, Nicolaie; Mihailescu, Ion N; Prodan, Gabriel; Ciupina, Victor; Palcevskis, Eriks; Krastins, Janis; Sima, Livia E; Petrescu, Stefana M

    2011-02-01

    Al(2) O(3) substrates with controlled porosity were manufactured from nanosized powders obtained by plasma processing. It was observed that when increasing the sintering temperature the overall porosity was decreasing, but the pores got larger. In a second step, Ce stabilized ZrO(2) doped hydroxyapatite coatings were pulsed laser deposited onto the Al(2) O(3) substrates. It was shown that the surface morphology, consisting of aggregates and particulates in micrometric range, was altered by the substrate porosity and interface properties, respectively. TEM studies evidenced that Ce stabilized ZrO(2) doped HA particulates ranged from 10 to 50 nm, strongly depending on the Al(2) O(3) porosity. The coatings consisted of HA nanocrystals embedded in an amorphous matrix quite similar to the bone structure. These findings were congruent with the increased biocompatibility and bioactivity of these layers confirmed by enhanced growing and proliferation of human mesenchymal stem cells.

  19. High-k ZrO2/Al2O3 bilayer on hydrogenated diamond: Band configuration, breakdown field, and electrical properties of field-effect transistors

    NASA Astrophysics Data System (ADS)

    Liu, J. W.; Liao, M. Y.; Imura, M.; Koide, Y.

    2016-09-01

    A band configuration of a high-k ZrO2/Al2O3 bilayer on hydrogenated diamond (H-diamond), a breakdown field (EB) of the ZrO2/Al2O3 bilayer, and an effect of gate-drain distance (dG-D) on electrical properties of ZrO2/Al2O3/H-diamond metal-insulator-semiconductor field-effect transistors (MISFETs) have been investigated. The Al2O3 and ZrO2 layers are successively deposited on H-diamond by atomic layer deposition (ALD) and sputtering-deposition (SD) techniques, respectively. The thin ALD-Al2O3 buffer layer with 4.0 nm thickness plays a role in protecting the H-diamond surface from being damaged by the plasma discharge during SD-ZrO2 deposition. The ZrO2/Al2O3 heterojunction has a type I band structure with valence and conduction band offsets of 0.6 ± 0.2 and 1.0 ± 0.2 eV, respectively. The valence band offset between ZrO2 and H-diamond is deduced to be 2.3 ± 0.2 eV. The EB of the ZrO2/Al2O3 bilayer is measured to be 5.2 MV cm-1, which is larger than that of the single ZrO2 layer due to the existence of the ALD-Al2O3 buffer layer. The dependence of dG-D on drain-source current maximum (IDS,max), on-resistance (RON), threshold voltage (VTH), and extrinsic transconductance maximum (gm,max) of the MISFETs has been investigated. With increasing dG-D from 4 to 18 μm, the absolute IDS,max decreases from 72.7 to 40.1 mA mm-1, and the RON increases linearly from 83.3 ± 5 to 158.7 ± 5 Ω mm. Variation of VTH values of around 1.0 V is observed, and the gm,max is in the range between 8.0 ± 0.1 and 13.1 ± 0.1 mS mm-1.

  20. Mechanical and morphological properties of polypropylene/nano α-Al2O3 composites.

    PubMed

    Mirjalili, F; Chuah, L; Salahi, E

    2014-01-01

    A nanocomposite containing polypropylene (PP) and nano α-Al2O3 particles was prepared using a Haake internal mixer. Mechanical tests, such as tensile and flexural tests, showed that mechanical properties of the composite were enhanced by addition of nano α-Al2O3 particles and dispersant agent to the polymer. Tensile strength was approximately ∼ 16% higher than pure PP by increasing the nano α-Al2O3 loading from 1 to 4 wt% into the PP matrix. The results of flexural analysis indicated that the maximum values of flexural strength and flexural modulus for nanocomposite without dispersant were 50.5 and 1954 MPa and for nanocomposite with dispersant were 55.88 MPa and 2818 MPa, respectively. However, higher concentration of nano α-Al2O3 loading resulted in reduction of those mechanical properties that could be due to agglomeration of nano α-Al2O3 particles. Transmission and scanning electron microscopic observations of the nanocomposites also showed that fracture surface became rougher by increasing the content of filler loading from 1 to 4% wt.

  1. Photochemistry of the α-Al2O3-PETN interface

    DOE PAGES

    Tsyshevsky, Roman V.; Zverev, Anton; Mitrofanov, Anatoly; ...

    2016-02-29

    Optical absorption measurements are combined with electronic structure calculations to explore photochemistry of an α-Al2O3-PETN interface formed by a nitroester (pentaerythritol tetranitrate, PETN, C5H8N4O12) and a wide band gap aluminum oxide (α-Al2O3) substrate. The first principles modeling is used to deconstruct and interpret the α-Al2O3-PETN absorption spectrum that has distinct peaks attributed to surface F0-centers and surfacePETN transitions. We predict the low energy α-Al2O3 F0-centerPETN transition, producing the excited triplet state, and α-Al2O3 F-0-centerPETN charge transfer, generating the PETN anion radical. This implies that irradiation by commonly used lasers can easily initiate photodecomposition of both excited and charged PETN atmore » the interface. As a result, the feasible mechanism of the photodecomposition is proposed.« less

  2. Mechanical and Morphological Properties of Polypropylene/Nano α-Al2O3 Composites

    PubMed Central

    Mirjalili, F.; Chuah, L.; Salahi, E.

    2014-01-01

    A nanocomposite containing polypropylene (PP) and nano α-Al2O3 particles was prepared using a Haake internal mixer. Mechanical tests, such as tensile and flexural tests, showed that mechanical properties of the composite were enhanced by addition of nano α-Al2O3 particles and dispersant agent to the polymer. Tensile strength was approximately ∼16% higher than pure PP by increasing the nano α-Al2O3 loading from 1 to 4 wt% into the PP matrix. The results of flexural analysis indicated that the maximum values of flexural strength and flexural modulus for nanocomposite without dispersant were 50.5 and 1954 MPa and for nanocomposite with dispersant were 55.88 MPa and 2818 MPa, respectively. However, higher concentration of nano α-Al2O3 loading resulted in reduction of those mechanical properties that could be due to agglomeration of nano α-Al2O3 particles. Transmission and scanning electron microscopic observations of the nanocomposites also showed that fracture surface became rougher by increasing the content of filler loading from 1 to 4% wt. PMID:24688421

  3. Raman spectroscopic study of Ni/Al 2O 3 catalyst

    NASA Astrophysics Data System (ADS)

    Aminzadeh, A.; Sarikhani-fard, H.

    1999-07-01

    In this article a preliminary Raman spectroscopic study of Ni/Al 2O 3 catalyst of the type used for the steam reformation of methane is reported. With several prepared samples of this catalyst and using FT-Raman and conventional dispersive Raman technique, it is shown how Raman spectroscopy can be used to monitor the exact conditions during the preparation of the catalyst. Raman data shows that despite a strong fluorescence background, some useful information can be obtained. According to these data, when the calcination temperature is raised above 1000°C, the gamma alumina ( γ-Al 2O 3) is converted to alpha alumina ( α-Al 2O 3) as it is expected. It further shows that Ni is not present as NiO: it is probably embedded in the crystal structure of γ-Al 2O 3 as NiAl 2O 4 (the spinel structure) or constituted as a solid solution with Al 2O 3.

  4. (100) facets of γ-Al2O3: the active surfaces for alcohol dehydration reactions

    SciTech Connect

    Kwak, Ja Hun; Mei, Donghai; Peden, Charles HF; Rousseau, Roger J.; Szanyi, Janos

    2011-05-01

    Temperature programmed desorption (TPD) of ethanol, and methanol dehydration reaction were studied on γ-Al2O3 in order to identify the catalytic active sites for alcohol dehydration reactions. Two high temperature (> 473 K) desorption features were observed following ethanol adsorption. Samples calcined at T≤473 K displayed a desorption feature in the 523-533 K temperature range, while those calcined at T ≥ 673 K showed a single desorption feature at 498 K. The switch from the high to low temperature ethanol desorption correlated well with the dehydroxylation of the (100) facets of γ-Al2O3 that was predicted at 550 K DFT calculations. Theoretical DFT simulations of the mechanism of dehydration. on clean and hydroxylated γ-Al2O3(100) surfaces, find that a concerted elimination of ethylene from an ethanol molecule chemisorbed at an Al3+ pentacoordinated site is the rate limiting step for catalytic cycle on both surfaces. Furthermore, titration of the pentacoordinate Al3+ sites on the (100) facets of γ-Al2O3 by BaO completely turned off the methanol dehydration reaction activity. These results unambiguously demonstrate that only the (100) facets on γ-Al2O3 are the catalytic active surfaces for alcohol dehydration.

  5. Directionally solidified Al2O3/GAP eutectic ceramics by micro-pulling-down method

    NASA Astrophysics Data System (ADS)

    Cao, Xue; Su, Haijun; Guo, Fengwei; Tan, Xi; Cao, Lamei

    2016-11-01

    We reported a novel route to prepare directionally solidified (DS) Al2O3/GAP eutectic ceramics by micro-pulling-down (μ-PD) method. The eutectic crystallizations, microstructure characters and evolutions, and their mechanical properties were investigated in detail. The results showed that the Al2O3/GAP eutectic composites can be successfully fabricated through μ-PD method, possessed smooth surface, full density and large crystal size (the maximal size: φ90 mm × 20 mm). At the process of Diameter, the as-solidified Al2O3/GAP eutectic presented a combination of "Chinese script" and elongated colony microstructure with complex regular structure. Inside the colonies, the rod-type or lamellar-type eutectic microstructures with ultra-fine GAP surrounded by the Al2O3 matrix were observed. At an appropriate solidificational rate, the binary eutectic exhibited a typical DS irregular eutectic structure of "chinese script" consisting of interpenetrating network of α-Al2O3 and GAP phases without any other phases. Therefore, the interphase spacing was refined to 1-2 µm and the irregular microstructure led to an outstanding vickers hardness of 17.04 GPa and fracture toughness of 6.3 MPa × m1/2 at room temperature.

  6. Observation of nanoscale adhesion, friction and wear between ALD Al2O3 coated silicon MEMS sidewalls.

    PubMed

    Buja, Federico; Fiorentino, Giuseppe; Kokorian, Jaap; Spengen, W Merlijn van

    2015-01-26

    We report a novel investigation of the tribological properties of aluminum oxide (Al2O3) when it is used as protective coating on the sidewalls of microelectromechanical systems (MEMS). By using an in-house built optical displacement measurement system, we were able to measure the on-chip displacements with an unprecedented resolution of 2 nm. This corresponds to 2 nN and 9 nN force resolution, respectively, depending on whether an adhesion or a friction sensor MEMS device was used for the measurement. Al2O3 was deposited on the vertical etched sidewalls using atomic layer deposition (ALD). All tests were carried out in ambient conditions. The same tests carried out on uncoated polysilicon devices were not reproducible due to stiction, which sometimes prevented the interacting surfaces from moving once contact was made. The higher adhesion of silicon was also found to hinder the mobility of the slider. In the ALD-coated devices, we observed increasing adhesion after 50000 repeated contacts. We attribute this increase to the accumulation of aluminum hydroxide debris produced by the reaction with moisture in the environment. We also investigated the long-term effect of friction on the coated silicon sidewalls. The dissipated energy decreases, with a minimum lateral force occurring around the 1000th cycle. After 1000 cycles, the lateral displacement decreases, suggesting an additional lateral dragging force caused by the interaction between a mixture of aluminum hydroxides and water. However, the small overall amount of debris produced during the friction test indicates the outstanding characteristic of Al2O3 as a protective coating for MEMS that use contacting or sliding interfaces.

  7. Observation of nanoscale adhesion, friction and wear between ALD Al2O3 coated silicon MEMS sidewalls

    NASA Astrophysics Data System (ADS)

    Buja, Federico; Fiorentino, Giuseppe; Kokorian, Jaap; Merlijn van Spengen, W.

    2015-06-01

    We report a novel investigation of the tribological properties of aluminum oxide (Al2O3) when it is used as protective coating on the sidewalls of microelectromechanical systems (MEMS). By using an in-house built optical displacement measurement system, we were able to measure the on-chip displacements with an unprecedented resolution of 2 nm. This corresponds to 2 nN and 9 nN force resolution, respectively, depending on whether an adhesion or a friction sensor MEMS device was used for the measurement. Al2O3 was deposited on the vertical etched sidewalls using atomic layer deposition (ALD). All tests were carried out in ambient conditions. The same tests carried out on uncoated polysilicon devices were not reproducible due to stiction, which sometimes prevented the interacting surfaces from moving once contact was made. The higher adhesion of silicon was also found to hinder the mobility of the slider. In the ALD-coated devices, we observed increasing adhesion after 50000 repeated contacts. We attribute this increase to the accumulation of aluminum hydroxide debris produced by the reaction with moisture in the environment. We also investigated the long-term effect of friction on the coated silicon sidewalls. The dissipated energy decreases, with a minimum lateral force occurring around the 1000th cycle. After 1000 cycles, the lateral displacement decreases, suggesting an additional lateral dragging force caused by the interaction between a mixture of aluminum hydroxides and water. However, the small overall amount of debris produced during the friction test indicates the outstanding characteristic of Al2O3 as a protective coating for MEMS that use contacting or sliding interfaces.

  8. Anchorage of γ-Al2O3 nanoparticles on nitrogen-doped multiwalled carbon nanotubes

    DOE PAGES

    Rodríguez-Pulido, A.; Martínez-Gutiérrez, H.; Calderon-Polania, G. A.; ...

    2016-06-07

    Nitrogen-doped multiwalled carbon nanotubes (CNx-MWNTs) have been decorated with γ-Al2O3 nanoparticles by a novel method. This process involved a wet chemical approach in conjunction with thermal treatment. During the particle anchoring process, individual CNx-MWNT nanotubes agglomerated into bundles, resulting in arrays of aligned CNx-MWNT coated with γ-Al2O3. Extensive characterization of the resulting γ-Al2O3/CNx-MWNT bundles was performed using a range of electron microscopy imaging and microanalytical techniques. In conclusion, a possible mechanism explaining the nanobundle alignment is described, and possible applications of these materials for the fabrication of ceramic composites using CNx-MWNTs are briefly discussed.

  9. Growth, Quantitative Growth Analysis, and Applications of Graphene on γ-Al2O3 catalysts

    PubMed Central

    Park, Jaehyun; Lee, Joohwi; Choi, Jung-Hae; Hwang, Do Kyung; Song, Yong-Won

    2015-01-01

    The possibilities offered by catalytic γ-Al2O3 substrates are explored, and the mechanism governing graphene formation thereon is elucidated using both numerical simulations and experiments. The growth scheme offers metal-free synthesis at low temperature, grain-size customization, large-area uniformity of electrical properties, single-step preparation of graphene/dielectric structures, and readily detachable graphene. We quantify based on thermodynamic principles the activation energies associated with graphene nucleation/growth on γ-Al2O3, verifying the low physical and chemical barriers. Importantly, we derive a universal equation governing the adsorption-based synthesis of graphene over a wide range of temperatures in both catalytic and spontaneous growth regimes. Experimental results support the equation, highlighting the catalytic function of γ-Al2O3 at low temperatures. The synthesized graphene is manually incorporated as a ‘graphene sticker’ into an ultrafast mode-locked laser. PMID:26137994

  10. Electrical Double Layer Capacitance in a Graphene-embedded Al2O3 Gate Dielectric

    PubMed Central

    Ki Min, Bok; Kim, Seong K.; Jun Kim, Seong; Ho Kim, Sung; Kang, Min-A; Park, Chong-Yun; Song, Wooseok; Myung, Sung; Lim, Jongsun; An, Ki-Seok

    2015-01-01

    Graphene heterostructures are of considerable interest as a new class of electronic devices with exceptional performance in a broad range of applications has been realized. Here, we propose a graphene-embedded Al2O3 gate dielectric with a relatively high dielectric constant of 15.5, which is about 2 times that of Al2O3, having a low leakage current with insertion of tri-layer graphene. In this system, the enhanced capacitance of the hybrid structure can be understood by the formation of a space charge layer at the graphene/Al2O3 interface. The electrical properties of the interface can be further explained by the electrical double layer (EDL) model dominated by the diffuse layer. PMID:26530817

  11. Electrical Double Layer Capacitance in a Graphene-embedded Al2O3 Gate Dielectric.

    PubMed

    Ki Min, Bok; Kim, Seong K; Jun Kim, Seong; Ho Kim, Sung; Kang, Min-A; Park, Chong-Yun; Song, Wooseok; Myung, Sung; Lim, Jongsun; An, Ki-Seok

    2015-11-04

    Graphene heterostructures are of considerable interest as a new class of electronic devices with exceptional performance in a broad range of applications has been realized. Here, we propose a graphene-embedded Al2O3 gate dielectric with a relatively high dielectric constant of 15.5, which is about 2 times that of Al2O3, having a low leakage current with insertion of tri-layer graphene. In this system, the enhanced capacitance of the hybrid structure can be understood by the formation of a space charge layer at the graphene/Al2O3 interface. The electrical properties of the interface can be further explained by the electrical double layer (EDL) model dominated by the diffuse layer.

  12. Process Capability Analysis of Vacuum Moulding for Development of Al-Al2O3 MMC

    NASA Astrophysics Data System (ADS)

    Singh, R.

    2013-01-01

    The purpose of the present study is to investigate process capability of vacuum moulding (VM) for development of Al-Al2O3 metal matrix composite (MMC). Starting from the identification of component, prototypes were prepared (with three different input parameters namely: vacuum pressure; component volume and sand grit size to give output in form of dimensional accuracy). Measurements on the coordinate measuring machine helped in calculating the dimensional tolerances of the Al-Al2O3 MMC prepared. Some important mechanical properties were also compared to verify the suitability of the components. Final components produced are acceptable as per ISO standard UNI EN 20286-I (1995). The results of study suggest that VM process lies in ±4.5 sigma (σ) limit as regard to dimensional accuracy of Al-Al2O3 MMC is concerned. This process ensures rapid production of pre-series technological prototypes and proof of concept at less production cost and time.

  13. Ionic conductivity and thermoelectric power of pure and Al2O3-dispersed AgI

    NASA Technical Reports Server (NTRS)

    Shahi, K.; Wagner, J. B., Jr.

    1981-01-01

    Ionic and electronic conductivities, and thermoelectric power have been measured for AgI and AgI containing a dispersion of submicron size Al2O3 particles. While the dispersion of Al2O3 enhances the ionic conductivity significantly, it does not affect the electronic properties of the matrix. The enhancement is a strong function of the size and concentration of the dispersoid. Various models have been tested to account for the enhanced conduction. However, the complex behavior of the present results points out the need for more sophisticated theoretical models. Ionic conduction and thermoelectric power data suggest that the dispersed Al2O3 generates an excess of cation vacancies and thereby enhances the conductivity and suppresses the thermoelectric power of the matrix. The individual heats of transport of cation interstitials and vacancies have been estimated and compared to their respective migration energies.

  14. Characteristics of Al-doped ZnO films grown by atomic layer deposition for silicon nanowire photovoltaic device.

    PubMed

    Oh, Byeong-Yun; Han, Jin-Woo; Seo, Dae-Shik; Kim, Kwang-Young; Baek, Seong-Ho; Jang, Hwan Soo; Kim, Jae Hyun

    2012-07-01

    We report the structural, electrical, and optical characteristics of Al-doped ZnO (ZnO:Al) films deposited on glass by atomic layer deposition (ALD) with various Al2O3 film contents for use as transparent electrodes. Unlike films fabricated by a sputtering method, the diffraction peak position of the films deposited by ALD progressively moved to a higher angle with increasing Al2O3 film content. This indicates that Zn sites were effectively replaced by Al, due to layer-by-layer growth mechanism of ALD process which is based on alternate self-limiting surface chemical reactions. By adjusting the Al2O3 film content, a ZnO:Al film with low electrical resistivity (9.84 x 10(-4) Omega cm) was obtained at an Al2O3 film content of 3.17%, where the Al concentration, carrier mobility, optical transmittance, and bandgap energy were 2.8 wt%, 11.20 cm2 V(-1) s(-1), 94.23%, and 3.6 eV, respectively. Moreover, the estimated figure of merit value of our best sample was 8.2 m7Omega(-1). These results suggest that ZnO:Al films deposited by ALD could be useful for electronic devices in which especially require 3-dimensional conformal deposition of the transparent electrode and surface passivation.

  15. Mechanism for converting Al2O3-containing borate glass to hydroxyapatite in aqueous phosphate solution.

    PubMed

    Zhao, Di; Huang, Wenhai; Rahaman, Mohamed N; Day, Delbert E; Wang, Deping

    2009-05-01

    The effect of replacing varying amounts (0-2.5 mol.%) of B2O3 with Al2O3 in a borate glass on (1) the conversion of the glass to HA in an aqueous phosphate solution and (2) the compressive strength of the as-formed HA product was investigated. Samples of each glass (10 x 10 x 8 mm) were placed in 0.25 M K2HPO4 solution at 60 degrees C, and the conversion kinetics to HA were determined from the weight loss of the glass and the pH of the solution. The structure and composition of the solid reaction products were characterized using X-ray diffraction, Fourier transform infrared spectroscopy and scanning electron microscopy. While the conversion rate of the glass to HA decreased considerably with increasing Al2O3 content, the microstructure of the HA product became denser and the compressive strength of the HA product increased. The addition of SiO2 to the Al2O3-containing borate glass reversed the deterioration of the conversion rate, and produced a further improvement in the strength of the HA product. The compressive strength of the HA formed from the borate glass with 2.5 mol.% Al2O3 and 5 mol.% SiO2 was 11.1 +/- 0.2 MPa, which is equal to the highest strengths reported for trabecular bone. The results indicated that simultaneous additions of Al2O3 and SiO2 could be used to control the bioactivity of the borate glass and to enhance the mechanical strength of the HA product. Furthermore, the HA product formed from the glass containing both SiO2 and Al2O3 could be applied to bone repair.

  16. Effect of AL2O3 and TiO2 nanoparticles on aquatic organisms

    NASA Astrophysics Data System (ADS)

    Gosteva, I.; Morgalev, Yu; Morgaleva, T.; Morgalev, S.

    2015-11-01

    Environmental toxicity of aqueous disperse systems of nanoparticles of binary compounds of titanium dioxides (with particle size Δ50=5 nm, Δ50=50 nm, Δ50=90 nm), aluminum oxide alpha-forms (Δ50=7 nm and Δ50=70 nm) and macro forms (TiO2 Δ50=350 nm, Al2O3 A50=4000 nm) were studied using biological testing methods. The bioassay was performed using a set of test organisms representing the major trophic levels. We found the dependence of the toxic effect concentration degree of nTiO2 and nAl2O3 on the fluorescence of the bacterial biosensor "Ekolyum", the chemotactic response of ciliates Paramecium caudatum, the growth of unicellular algae Chlorella vulgaris Beijer and mortality of entomostracans Daphnia magna Straus. We revealed the selective dependence of nTiO2 and nAl2O3 toxicity on the size, concentration and chemical nature of nanoparticles. The minimal concentration causing an organism's response on nTiO2 and nAl2O3 effect depends on the type of the test- organism and the test reaction under study. We specified L(E)C50 and acute toxicity categories for all the studied nanoparticles. We determined that nTiO2 (Δ50=5 nm) belong to the category «Acute toxicity 1», nTiO2 (A50=90 nm) and nAl2O3 (Δ50=70 nm) - to the category «Acute toxicity 2», nAl2O3 (Δ50=7 nm) - to the category «Acute toxicity 3». No acute toxicity was registered for nTiO2 (Δ50=50 nm) and macro form TiO2.

  17. Modifying γ-Al2O3 surface with Y2Sn2O7 pyrochlore: on monolayer dispersion behaviour of composite oxides.

    PubMed

    Xu, Xianglan; Liu, Fang; Tian, Jinshu; Peng, Honggen; Liu, Wenming; Fang, Xiuzhong; Zhang, Ning; Wang, Xiang

    2017-03-21

    To investigate the dispersion behaviours of composite oxides onto the supports, and to achieve better supports for Pd for CO oxidation, a series of Y2Sn2O7/Al2O3 composite oxides with different Y2Sn2O7 loadings were prepared via deposition-precipitation method. Using XRD and XPS extrapolation methods, it is revealed that similar to single component metal oxides, composite oxides can also disperse spantaneously onto the support surfaces to form a monlayer with a certain capacity. The monolayer dispersion capacity/threshhold for Y2Sn2O7 on γ-Al2O3 surface is 0.109 mmol*100 m-2 γ-Al2O3, equalling to 7.2% Y2Sn2O7 weight loading. It is deserved to mention here that this is the first work to demonstrate the monolayer dispersion phenomenon of a composite oxide on a support. After the combination of Y2Sn2O7 with γ-Al2O3, active oxygen species can be introduced onto the catalyst surfaces. Therefore, the interaction between Pd and the supports can be strengthened, thus improving the Pd dispersion in comparison with the individual Y2Sn2O7 support and inducing synergistic effect between Pd and the composite supports, which is beneficial to the activity of the catalysts. By tuning the γ-Al2O3 surface with different amount of pyrochlore Y2Sn2O7 compound, the CO oxidation activity on the 1%Pd/Y2Sn2O7/Al2O3 has been improved. These findings may put new insights for people to design and prepare competitve supported noble metal catalysts with less amount of noble metals.

  18. Effect Of Preparation Methods On The Performance Of Co/Al2O3 Catalysts For Dry Reforming Of Methane

    SciTech Connect

    Ewbank, Jessica L.; Kovarik, Libor; Kenvin, Christian C.; Sievers, Carsten

    2014-01-06

    Two methods, dry impregnation (DI) and controlled adsorption (CA), are used for the preparation of Co/ Al2O3 catalysts for methane dry reforming reactions. Point of zero charge (PZC) measurements, pH-precipitation studies, and adsorption isotherms are used to develop a synthesis procedure in which deposition of Co2+ takes place in a more controlled manner than metal deposition during drying in synthesis by dry impregnation. The possible adsorption phenomena that occur during preparation of Co/Al2O3 catalysts by controlled adsorption are discussed. H2 chemisorption and TEM show that catalysts prepared by CA have smaller average particle sizes and higher dispersions. TPR studies show that for the sample prepared by CA a higher amount of cobalt is reduced to its metallic state and that more CoAl2O4 spinel species are present relative to DI samples. The catalyst prepared by CA shows higher activity and slower deactivation for methane dry reforming than the catalyst prepared by DI. XPS and C, H, N analysis on spent catalysts confirm two types of carbonaceous deposits are formed depending on the preparation method.

  19. Study of LDPE/Al2O3 composite material as substrate for microstrip antenna

    NASA Astrophysics Data System (ADS)

    Sarmah, Debashis; Bhattacharyya, N. S.; Bhattacharyya, S.; Gogoi, J. P.

    2013-01-01

    Low density polyethylene (LDPE)/Alumina (Al2O3) composite systems have been studied as an alternate substrate for microstrip patch antennas (MPA). Morphological, thermal and microwave characterizations of the composites are carried out for different volume fractions of Al2O3 in the LDPE matrix. The size and the distribution of alumina particles are quite uniform in the composite. Enhancement of thermal and microwave properties of the composite over the parent polymer is observed. Simple rectangular MPA in X-band is fabricated on the composite material to verify its applicability as substrates for MPA. A return loss of ~ -26dB is observed at the design frequency.

  20. Study of the KNO3-Al2O3 system by differential scanning calorimetry

    NASA Astrophysics Data System (ADS)

    Amirov, A. M.; Gafurov, M. M.; Rabadanov, K. Sh.

    2016-09-01

    The structural and the thermodynamic properties of potassium nitrate KNO3 and its composites with nanosized aluminum oxide Al2O3 have been studied by differential scanning calorimetry. It has been found that an amorphous phase forms in composites (1- x)KNO3- x Al2O3. The thermal effect corresponding to this phase has been observed at 316°C. It has been found that the phase transition heats of potassium nitrate decreased as the aluminum oxide fraction increased.

  1. High Temperature Aerogels in the Al2O3-SiO2 System

    NASA Technical Reports Server (NTRS)

    Hurwitz, Frances I.; Aranda, Denisse V.; Gallagher, Meghan E.

    2008-01-01

    Al2O3-SiO2 aerogels are of interest as constituents of thermal insulation systems for use at high temperatures. Al2O3 and mullite aerogels are expected to crystallize at higher temperatures than their SiO2 counterparts, hence avoiding the shrinkages that accompany the formation of lower temperature SiO2 phases and preserving pore structures into higher temperature regimes. The objective of this work is to determine the influence of processing parameters on shrinkage, gel structure (including surface area, pore size and distribution) and pyrolysis behavior.

  2. Surface passivation of gallium nitride by ultrathin RF-magnetron sputtered Al2O3 gate.

    PubMed

    Quah, Hock Jin; Cheong, Kuan Yew

    2013-08-14

    An ultrathin RF-magnetron sputtered Al2O3 gate on GaN subjected to postdeposition annealing at 800 °C in O2 ambient was systematically investigated. A cross-sectional energy-filtered transmission electron microscopy revealed formation of crystalline Al2O3 gate, which was supported by X-ray diffraction analysis. Various current conduction mechanisms contributing to leakage current of the investigated sample were discussed and correlated with metal-oxide-semiconductor characteristics of this sample.

  3. The Influence of Al2O3 Powder Morphology on the Properties of Cu-Al2O3 Composites Designed for Functionally Graded Materials (FGM)

    NASA Astrophysics Data System (ADS)

    Strojny-Nędza, Agata; Pietrzak, Katarzyna; Węglewski, Witold

    2016-08-01

    In order to meet the requirements of an increased efficiency applying to modern devices and in more general terms science and technology, it is necessary to develop new materials. Combining various types of materials (such as metals and ceramics) and developing composite materials seem to be suitable solutions. One of the most interesting materials includes Cu-Al2O3 composite and gradient materials (FGMs). Due to their potential properties, copper-alumina composites could be used in aerospace industry as rocket thrusters and components in aircraft engines. The main challenge posed by copper matrix composites reinforced by aluminum oxide particles is obtaining the uniform structure with no residual porosity (existing within the area of the ceramic phase). In the present paper, Cu-Al2O3 composites (also in a gradient form) with 1, 3, and 5 vol.% of aluminum oxide were fabricated by the hot pressing and spark plasma sintering methods. Two forms of aluminum oxide (αAl2O3 powder and electrocorundum) were used as a reinforcement. Microstructural investigations revealed that near fully dense materials with low porosity and a clear interface between the metal matrix and ceramics were obtained in the case of the SPS method. In this paper, the properties (mechanical, thermal, and tribological) of composite materials were also collected and compared. Technological tests were preceded by finite element method analyses of thermal stresses generated in the gradient structure, and additionally, the role of porosity in the formation process of composite properties was modeled. Based on the said modeling, technological conditions for obtaining FGMs were proposed.

  4. A comparison of the doppler-broadened positron annihilation spectra of neutron irradiated Al 2O 3 and MgAl 2O 3

    NASA Astrophysics Data System (ADS)

    Jones, P. L.; Schaffer, J. P.; Cocks, F. H.; Clinard, F. W.; Hurley, G. F.

    1985-01-01

    Radiation damage studies of oxides and ceramics have become of increasing importance due to the projected use of these materials in thermonuclear fusion reactors as electronic insulators and first wall materials. In addition these materials are important in RAD waste disposal. As part of a study of the defect structure in radiation damaged ceramics Doppler-broadened positron annihilation spectra have been obtained for a series of single crystal sapphire (α-Al 2O 3) and polycrystal (1:1) and (1:2) magnesium aluminate spinel (MgO·Al 2O 3 and MgO-2Al 2O 3) samples. These samples were irradiated in EBR-II to a fluence of 3 × 10 25 n/m 2 (E > 0.1 MeV) at 740°C, and 2 × 10 26 n/m 2 (E > 0.1 MeV) at ~ 550°C respectively. Positron annihilation spectra lineshapes for the irradiated, annealed, and as-received samples of both materials were compared using S parameter analysis. These calculations were made on deconvoluted gamma ray spectra that were free of any instrumental broadening effects. In this way, absolute S parameter changes could be calculated. The observed changes in the S parameter are consistent with independent volume swelling measurements for both the α-A1 2O 3 and the (1:2) MgAl 2O 4 samples. However, the change in S parameter measured for the (1:1) spinel is contrary to the measured volume change. This apparent anomaly indicates a predominence of interstitial as opposed to vacancy type defects in this material.

  5. Stoichiometry of the ALD-Al2O3/4H-SiC interface by synchrotron-based XPS

    NASA Astrophysics Data System (ADS)

    Usman, Muhammad; Saveda Suvanam, Sethu; Ghadami Yazdi, Milad; Göthelid, Mats; Sultan, Muhammad; Hallén, Anders

    2016-06-01

    The interface of Al2O3 with 4H-SiC is investigated with synchrotron-based high-resolution x-ray photoelectron spectroscopy to clarify the effect of post-dielectric deposition annealing processes (rapid thermal annealing (RTA) and furnace annealing (FA)) involved in device fabrication. Our results show that post-deposition annealing of Al2O3/4H-SiC up to 1100 °C forms a thin interfacial layer of SiO2 between Al2O3 and SiC, which possibly improves the dielectric properties of the system by reducing oxide charges and near-interface traps. Moreover, the formation of SiO2 at the interface gives additional band offset to the dielectric system. We have also observed that the RTA and FA processes have similar results at a high temperature of 1100 °C. Therefore, we propose that high-temperature post-oxide (Al2O3) deposition annealing of up to 1100 °C may be used in device processing, which can improve overall dielectric properties and consequently the device performance.

  6. Development of nano-niO/Al2O3 catalyst to be used for tar removal in biomass gasification.

    PubMed

    Li, Jianfen; Yan, Rong; Xiao, Bo; Liang, David Tee; Du, Lijuan

    2008-08-15

    The objective of this study isto develop a novel supported nano-NiO catalyst for tar removal in biomass gasification/pyrolysis, to significantly enhance the quality of the produced gases. For this purpose, the supported nano-NiO/gamma-Al2O3 catalyst was prepared by deposition-precipitation (DP) method. Different analytical approaches such as XRD, BET, TEM and SEM/EDX were used to characterize the synthesized catalysts. The results showed thatthe prepared nano-NiO/gamma-Al2O3 catalysts had a coated structure with a loading of NiO in catalysts over 12 wt %, and they had also a higher BET surface area over commercial nickel based catalysts. The active components of catalyst were spherical NiO nanoparticles coated on the surface of supports with a size range of 12-18 nm. Furthermore, the activity of the catalysts to remove tar in the process of biomass pyrolysis was also investigated using a bench-scale combined fixed bed reactor. The experiments demonstrated that the tar yield after addition of the catalyst was reduced significantly; the tar removal efficiency reached to 99% for catalytic pyrolysis at 800 degrees C, and the gas yield after addition of the catalyst increased markedly. The compositions of gas products before and after addition of the catalyst in the process also changed significantly. The percentages of CO2 and CH4 in the product gas after addition of the catalysts were obviously reduced, while those of the valuable H2 and CO strongly increased. Therefore, using the prepared NiO/gamma-Al2O3 catalyst in biomass gasification/pyrolysis can significantly improve the quality of the produced gas and meanwhile efficiently eliminate the tar generation.

  7. Performance of AlGaN/GaN MISHFET using dual-purpose thin Al2O3 layer for surface protection and gate insulator

    NASA Astrophysics Data System (ADS)

    Kim, Do-Kywn; Sindhuri, V.; Jo, Young-Woo; Kim, Dong-Seok; Kang, Hee-Sung; Lee, Jun-Hyeok; Lee, Yong Soo; Bae, Youngho; Hahm, Sung-Ho; Lee, Jung-Hee

    2014-10-01

    In this work, we have investigated a role of a thin Al2O3 layer in AlGaN/GaN MISHFET by characterizing the variation of the sheet resistance of the 2DEG channel layer. The Al2O3 layer, varying the thickness from 0 to 10 nm, was utilized as the gate insulator of the device as well as the surface protection layer during RTP for ohmic contact formation. After RTP, the 2DEG channel layer without the Al2O3 layer was rapidly degraded by increasing the sheet resistance of the layer to 1360 Ω/□ from the sheet resistance of 400 Ω/□ of the as-grown sample. The degradation was still observed even when 1.5 nm-thick Al2O3 layer was used. However, the sheet resistances of the devices remained constant with slightly decreased value from that of the as-grown sample when the thickness is larger than 3 nm, which indicates that the 3 nm-thick Al2O3 layer well protects the AlGaN surface above the 2DEG channel during RTP. The slight decrease in sheet resistance is probably because some acceptor-like states existing at AlGaN surface become neutralized and hence the 2DEG density increases. The Al2O3 layer was not removed for proceeding the fabrication of AlGaN/GaN MISHFET, but rather used as a gate dielectric, which simplifies the device fabrication eliminating the additional deposition steps for the gate dielectric. The threshold voltage of the device, investigated in this work, was increased to the negative direction with increasing the thickness of Al2O3 layers while the transconductance was decreased. The best performances were obtained from the device with 8 nm-thick Al2O3 layer, exhibiting very low gate leakage current of 10-9 A/mm with subthreshold swing (SS) of 80 mV/dec and very high Ion/Ioff ratio (>9 orders).

  8. Crystallization kinetics of BaO-Al2O3-SiO2 glasses

    NASA Technical Reports Server (NTRS)

    Bansal, Narottam P.; Hyatt, Mark J.

    1988-01-01

    Barium aluminosilicate glasses are being investigated as matrix materials in high-temperature ceramic composites for structural applications. Kinetics of crystallization of two refractory glass compositions in the barium aluminosilicate system were studied by differential thermal analysis (DTA), X-ray diffraction (XRD), and scanning electron microscopy (SEM). From variable heating rate DTA, the crystallization activation energies for glass compositions (wt percent) 10BaO-38Al2O3-51SiO2-1MoO3 (glass A) and 39BaO-25Al2O3-35SiO2-1MoO3 (glass B) were determined to be 553 and 558 kJ/mol, respectively. On thermal treatment, the crystalline phases in glasses A and B were identified as mullite (3Al2O3-2SiO2) and hexacelsian (BaO-Al2O3-2SiO2), respectively. Hexacelsian is a high-temperature polymorph which is metastable below 1590 C. It undergoes structural transformation into the orthorhombic form at approximately 300 C accompanied by a large volume change which is undesirable for structural applications. A process needs to be developed where stable monoclinic celsian, rather than hexacelsian, precipitates out as the crystal phase in glass B.

  9. Synthesis of MgO nanoparticle loaded mesoporous Al2O3 and its defluoridation study

    NASA Astrophysics Data System (ADS)

    Dayananda, Desagani; Sarva, Venkateswara R.; Prasad, Sivankutty V.; Arunachalam, Jayaraman; Parameswaran, Padmanabhan; Ghosh, Narendra N.

    2015-02-01

    MgO nanoparticle loaded mesoporous alumina has been synthesized using a simple aqueous solution based cost effective method for removal of fluoride from water. Wide angle powder X-ray diffraction, nitrogen adsorption desorption analysis, transmission electron microscopy techniques and energy dispersive X-ray spectroscopy were used to characterize the synthesized adsorbents. Synthesized adsorbents possess high surface area with mesoporous structure. The adsorbents have been thoroughly investigated for the adsorption of F- using batch adsorption method. MgO nanoparticle loading on mesoporous Al2O3 enhances the F- adsorption capacity of Al2O3 from 56% to 90% (initial F- concentration = 10 mg L-1). Kinetic study revealed that adsorption kinetics follows the pseudo-second order model, suggesting the chemisorption mechanism. The F- adsorption isotherm data was explained by both Langmuir and Freundlich model. The maximum adsorption capacity of 40MgO@Al2O3 was 37.35 mg g-1. It was also observed that, when the solutions having F- concentration of 5 mg L-1 and 10 mg L-1 was treated with 40MgO@Al2O3, the F- concentration in treated water became <1 mg L-1, which is well below the recommendation of WHO.

  10. Effect of Heat Treatment on the Microstructure and Microhardness of Nanostructural Al2O3 Coatings

    NASA Astrophysics Data System (ADS)

    Kovaleva, M.; Tyurin, Yu.; Vasilik, N.; Kolisnichenko, O.; Prozorova, M.; Arseenko, M.; Sirota, V.; Pavlenko, I.

    2014-10-01

    Nanostructural Al2O3 coatings were formed on a steel substrate surface using a multichamber detonation sprayer. The Al2O3 coatings were characterized by a dense microstructure with porosity below 1% and hardness of 1300 ± 25 HV0.3. The transition layer between the coating and substrate was up to 15 μm thick, containing Fe-Al-type intermetallic compounds (FeAl3, Fe2Al5). Postdeposition heat treatment of the samples at 850 °C for 3 h was carried out in air and argon environments. The effect of heat treatment on the microstructure and microhardness of the Al2O3 coatings was investigated by optical microscopy, scanning and transmission electron microscopy, scanning probe microscopy, x-ray phase analysis, and Vickers hardness testing. A positive impact of postcoating heat treatment on the coating microstructure and microhardness was observed. Heat treatment resulted in an increase in the coating hardness from 1300, to 1350 ± 25 HV0.3 and 1600 ± 25 HV0.3 after annealing in air and argon, respectively. Heat treatment in argon led to a more significant increase in the α-Al2O3 phase from 47 to 81%.

  11. Crack-resistant Al2O3–SiO2 glasses

    NASA Astrophysics Data System (ADS)

    Rosales-Sosa, Gustavo A.; Masuno, Atsunobu; Higo, Yuji; Inoue, Hiroyuki

    2016-04-01

    Obtaining “hard” and “crack-resistant” glasses have always been of great important in glass science and glass technology. However, in most commercial glasses both properties are not compatible. In this work, colorless and transparent xAl2O3–(100–x)SiO2 glasses (30 ≤ x ≤ 60) were fabricated by the aerodynamic levitation technique. The elastic moduli and Vickers hardness monotonically increased with an increase in the atomic packing density as the Al2O3 content increased. Although a higher atomic packing density generally enhances crack formation in conventional oxide glasses, the indentation cracking resistance increased by approximately seven times with an increase in atomic packing density in binary Al2O3–SiO2 glasses. In particular, the composition of 60Al2O3•40SiO2 glass, which is identical to that of mullite, has extraordinary high cracking resistance with high elastic moduli and Vickers hardness. The results indicate that there exist aluminosilicate compositions that can produce hard and damage-tolerant glasses.

  12. Reduction of nitrotoluenes in supercritical isopropanol over Al2O3 in a flow reactor

    NASA Astrophysics Data System (ADS)

    Sivcev, V. P.; Korchagina, D. V.; Volcho, K. P.; Salakhutdinov, N. F.; Anikeev, V. I.

    2015-02-01

    The reduction of o-, m-, and p-nitrotoluenes in supercritical isopropanol over Al2O3 in a flow reactor is studied. It is shown that corresponding toluidines are major reaction products. Aromatic ring alkoxylation and N-alkylation products make a considerable contribution to the composition of reaction mixtures.

  13. Complete oxidation of volatile organic compounds over Ce/Cu/gamma-AL2O3 catalyst.

    PubMed

    Kim, S C; Shim, W G

    2008-05-01

    The effect of cerium (Ce) addition into Cu (5, 10 or 15 wt%)/gamma-Al2O3 catalysts on the catalyst properties and catalytic activity was investigated for the complete oxidation of volatile organic compounds (VOCs). X-ray diffraction (XRD), the Brunauer Emmett Teller method (BET), temperature programmed reduction (TPR) by H2, and N2O pulse titration were used to characterize a series of supported copper catalysts modified with cerium. Cerium was observed to be an inhibitor for 5 wt% and promoter for 10 or 15 wt% Cu/gamma-Al2O3 catalyst. The results of TPR, average crystallite size and dispersion indicated that even though Ce loadings on 10 and 15 wt% Cu/gamma-Al2O3 caused a reduction in BET surface area of the catalysts, the loaded amounts of Ce enhanced the catalytic activity through the formation of highly dispersed copper clusters. Kinetic parameters were developed for individual benzene, toluene and o-xylene (BTX) for 5 wt% Ce/10 wt% Cu/gamma-Al2O3 catalyst at temperatures ranging from 210 to 240 degrees C. The Mars and Van Krevelen model was found to be an adequate description of the catalytic oxidation of BTX for this study. The activity sequence with respect to the BTX molecules was found to be benzene > toluene > o-xylene under the surface-reaction-controlled region.

  14. Preparation and catalytic behavior of CeO2 nanoparticles on Al2O3 crystal

    NASA Astrophysics Data System (ADS)

    Hattori, Takashi; Kobayashi, Katsutoshi; Ozawa, Masakuni

    2017-01-01

    In this work, we examined the preparation, morphology, and catalytic behavior of CeO2 nanoparticles (NPs) on Al2O3(0001) crystal substrates. A CeO2 NP layer was prepared by the dipping method using a CeO2 nanocrystal colloid solution. Even after heat treatment at 1000 °C, the CeO2 NP layer maintained the granular morphology of CeO2 with a grain diameter of less than 40 nm. CeO2 NPs on an Al2O3 crystal showed higher oxidation activity for gaseous hydrogen at moderate temperatures and enhanced oxygen release properties of CeO2, compared with CeO2 powder. This was due to the highly dispersed CeO2 NPs and the interaction between CeO2 NPs and Al2O3; this clarified the importance of the Al2O3 support for the CeO2 catalyst.

  15. Crack-resistant Al2O3–SiO2 glasses

    PubMed Central

    Rosales-Sosa, Gustavo A.; Masuno, Atsunobu; Higo, Yuji; Inoue, Hiroyuki

    2016-01-01

    Obtaining “hard” and “crack-resistant” glasses have always been of great important in glass science and glass technology. However, in most commercial glasses both properties are not compatible. In this work, colorless and transparent xAl2O3–(100–x)SiO2 glasses (30 ≤ x ≤ 60) were fabricated by the aerodynamic levitation technique. The elastic moduli and Vickers hardness monotonically increased with an increase in the atomic packing density as the Al2O3 content increased. Although a higher atomic packing density generally enhances crack formation in conventional oxide glasses, the indentation cracking resistance increased by approximately seven times with an increase in atomic packing density in binary Al2O3–SiO2 glasses. In particular, the composition of 60Al2O3•40SiO2 glass, which is identical to that of mullite, has extraordinary high cracking resistance with high elastic moduli and Vickers hardness. The results indicate that there exist aluminosilicate compositions that can produce hard and damage-tolerant glasses. PMID:27053006

  16. Distinctive electrical properties in sandwich-structured Al2O3/low density polyethylene nanocomposites

    NASA Astrophysics Data System (ADS)

    Wang, Si-Jiao; Zha, Jun-Wei; Li, Wei-Kang; Dang, Zhi-Min

    2016-02-01

    The sandwich-structured Al2O3/low density polyethylene (Al2O3/LDPE) nanocomposite dielectrics consisting of layer-by-layer with different concentration Al2O3 loading were prepared by melt-blending and following hot pressing method. The space charge distribution from pulsed electro-acoustic method and breakdown strength of the nanocomposites were investigated. Compared with the single-layer Al2O3/LDPE nanocomposites, the sandwich-structured nanocomposites remarkably suppressed the space charge accumulation and presented higher breakdown strength. The charges in the sandwich-structured nanocomposites decayed much faster than that in the single-layer nanocomposites, which was attributed to an effective electric field caused by the formation of the interfacial space charges. The energy depth of shallow and deep traps was estimated as 0.73 eV and 1.17 eV in the sandwich-structured nanocomposites, respectively, according to the thermal excitation theoretical model we proposed. This work provides an attractive strategy of design and fabrication of polymer nanocomposites with excellent space charge suppression.

  17. Electrochemical Impedance Studies on Tribocorrosion Behavior of Plasma-Sprayed Al2O3 Coatings

    NASA Astrophysics Data System (ADS)

    Liu, Zhe; Chu, Zhenhua; Chen, Xueguang; Dong, Yanchun; Yang, Yong; Li, Yingzhen; Yan, Dianran

    2015-06-01

    In this paper, the tribocorrosion of plasma-sprayed Al2O3 coatings in simulated seawater was investigated by electrochemical impedance spectroscopy (EIS) technique, complemented by scanning electron microscopy to observe the morphology of the tribocorrosion attack. Base on EIS of plasma-sprayed Al2O3 coatings undergoing long-time immersion in simulated seawater, the corrosion process of Al2O3 coatings can be divided into the earlier stage of immersion (up to 20 h) and the later stage (beyond 20 h). Then, the wear tests were carried out on the surface of Al2O3 coating undergoing different times of immersion to investigate the influence of wear on corrosion at different stages. The coexistence of wear and corrosion condition had been created by a boron nitride grinding head rotating on the surface of coatings corroded in simulated seawater. The measured EIS and the values of the fitting circuit elements showed that wear accelerated corrosion at the later stage, meanwhile, corrosion accelerated wear with the immersion time increasing.

  18. Transport mechanisms of leakage current in Al2O3/InAlAs MOS capacitors

    NASA Astrophysics Data System (ADS)

    Jin, Chengji; Lu, Hongliang; Zhang, Yimen; Zhang, Yuming; Guan, He; Wu, Lifan; Lu, Bin; Liu, Chen

    2016-09-01

    An Al2O3 layer is inserted between the InAlAs layer and the metal gate in InAs/AlSb HEMTs to suppress the leakage current. The transport mechanisms of leakage current in Al2O3/InAlAs metal-oxide-semiconductor (MOS) capacitors at both positive and negative biases at different temperatures ranging from 10 °C to 70 °C are investigated. For positive bias, the leakage current is dominated by Schottky emission. Based on the fitted straight lines, the relative dielectric constant of Al2O3 and the barrier height between Al2O3 and InAlAs are extracted. However, for negative bias, the leakage current is dominated by Frenkel-Poole (F-P) emission and the depth of the trap energy level from the conduction band (ϕt) is extracted. Furthermore, authors explain the reason why the dominating mechanisms at positive and negative biases are different.

  19. Plasma etching behavior of Y2O3 ceramics: Comparative study with Al2O3

    NASA Astrophysics Data System (ADS)

    Cao, Yu-Chao; Zhao, Lei; Luo, Jin; Wang, Ke; Zhang, Bo-Ping; Yokota, Hiroki; Ito, Yoshiyasu; Li, Jing-Feng

    2016-03-01

    The plasma etching behavior of Y2O3 coating was investigated and compared with that of Al2O3 coating under various conditions, including chemical etching, mixing etching and physical etching. The etching rate of Al2O3 coating declined with decreasing CF4 content under mixing etching, while that of Y2O3 coating first increased and then decreased. In addition, the Y2O3 coating demonstrated higher erosion-resistance than Al2O3 coating after exposing to fluorocarbon plasma. X-ray photoelectron spectroscopy (XPS) analysis confirmed the formations of YF3 and AlF3 on the Y2O3 and Al2O3 coatings, respectively, which acted as the protective layer to prevent the surface from further erosion with fluorocarbon plasma. It was revealed that the etching behavior of Y2O3 depended not only on the surface fluorination but also on the removal of fluoride layer. To analyze the effect of porosity, Y2O3 bulk samples with high density were prepared by spark plasma sintering, and they demonstrated higher erosion-resistances compared with Y2O3 coating.

  20. Hydrothermal extraction and gasification of low rank coal with catalyst Al2O3 and Pd/Al2O3

    NASA Astrophysics Data System (ADS)

    Fachruzzaki, Handayani, Ismi; Mursito, Anggoro Tri

    2017-01-01

    Increasing coal quality is very important in order to utilize low-rank coal. This research is attempted to increase the quality of low-rank coal using hydrothermal process with hot compressed water (HCW) at 200 °C and 3 MPa. The product from this process were solid residue and liquid filtrate with organic component. Product from gasification of the filtrate was synthetic gas. The result showed that higher water flow rate could increase organic component in the filtrate. When a catalyst was used, the extraction process was faster, the organic component in the filtrate was increased while its content was decreased in the residue. Fourier transform infrared spectroscopy (FTIR) analysis indicated that coal extraction using HCW was more effective with catalyst Pd/Al2O3. Increasing the process temperature will increase the amounts CO and H2 gas. In this research, highest net heating value at 800°C using K2CO3 solution and Pd/Al2O3 catalyst was 17,774.36 kJ/kg. The highest cold gas efficiency was 91.29% and the best carbon conversion was 34.78%.

  1. Magnetic and magnetoresistive properties of Al2O3-Sr2FeMoO6-δ-Al2O3 nanoheterostructures

    NASA Astrophysics Data System (ADS)

    Kalanda, N. A.; Gorokh, G. G.; Yarmolich, M. V.; Lozovenko, A. A.; Kanyukov, E. Yu.

    2016-02-01

    A method has been developed for fabricating nanoporous matrices based on anodic aluminum oxide for the deposition of ferromagnetic nanoparticles in them. The modes of deposition of strontium ferromolybdate thin films prepared by the ion-plasma method have been worked out, and the magnetic and magnetoresistive properties, structure, and composition of the films have been investigated. It has been revealed that the microstructure and properties of the strontium ferromolybdate films deposited by ionplasma sputtering depend on the deposition rate and the temperature of the substrate. Based on the measurement of the electrical resistivity of nanoheterostructures in a magnetic field, it has been found that the magnetoresistance reaches 14% at T = 15 K and B = 8 T, which is due to the manifestation of tunneling magnetoresistance.

  2. MgO-Al2O3-ZrO2 Amorphous Ternary Composite: A Dense and Stable Optical Coating

    NASA Technical Reports Server (NTRS)

    Shaoo, Naba K.; Shapiro, Alan P.

    1998-01-01

    The process-parameter-dependent optical and structural properties of MgO-Al2O3-ZrO2 ternary mixed-composite material were investigated. Optical properties were derived from spectrophotometric measurements. The surface morphology, grain size distributions, crystallographic phases, and process- dependent material composition of films were investigated through the use of atomic force microscopy, x-ray diffraction analysis, and energy-dispersive x-ray analysis. Energy-dispersive x-ray analysis made evident the correlation between the optical constants and the process-dependent compositions in the films. It is possible to achieve environmentally stable amorphous films with high packing density under certain optimized process conditions.

  3. Characterization of ZrO2 buffer layers for sequentially evaporated Y-Ba-CuO on Si and Al2O3 substrates

    NASA Technical Reports Server (NTRS)

    Valco, George J.; Rohrer, Norman J.; Pouch, John J.; Warner, Joseph D.; Bhasin, Kul B.

    1988-01-01

    Thin film high temperature superconductors have the potential to change the microwave technology for space communications systems. For such applications it is desirable that the films be formed on substrates such as Al2O3 which have good microwave properties. The use of ZrO2 buffer layers between Y-Ba-Cu-O and the substrate has been investigated. These superconducting films have been formed by multilayer sequential electron beam evaporation of Cu, BaF2 and Y with subsequent annealing. The three layer sequence of Y/BaF2/Cu is repeated four times for a total of twelve layers. Such a multilayer film, approximately 1 micron thick, deposited directly on SrTiO3 and annealed at 900 C for 45 min produces a film with a superconducting onset of 93 K and critical temperature of 85 K. Auger electron spectroscopy in conjunction with argon ion sputtering was used to obtain the distribution of each element as a function of depth for an unannealed film, the annealed film on SrTiO3 and annealed films on ZrO2 buffer layers. The individual layers were apparent. After annealing, the bulk of the film on SrTiO3 is observed to be fairly uniform while films on the substrates with buffer layers are less uniform. The Y-Ba-Cu-O/ZrO2 interface is broad with a long Ba tail into the ZrO2, suggesting interaction between the film and the buffer layer. The underlying ZrO2/Si interface is sharper. The detailed Auger results are presented and compared with samples annealed at different temperatures and durations.

  4. Structural optical correlated properties of SnO2/Al2O3 core@ shell heterostructure

    NASA Astrophysics Data System (ADS)

    Heiba, Zein K.; Imam, N. G.; Bakr Mohamed, Mohamed

    2016-07-01

    Nano size polycrystalline samples of the core@shell heterostructure of SnO2 @ xAl2O3 (x = 0, 25, 50, 75 wt.%) were synthesized by sol-gel technique. The resulting samples were characterized with fourier transform infrared spectroscopy (FT-IR), photoluminescence (PL) and X-ray powder diffraction (XRD). The XRD patterns manifest diffraction peaks of SnO2 as main phase with weak peaks corresponding to Al2O3 phase. The formation of core@ shell structure is confirmed by TEM images and Rietveld quantitative phase analysis which revealed that small part of Al2O3 is incorporated into the SnO2 lattice while the main part (shell) remains as a separate phase segregated on the grain boundary surface of SnO2 (core). It is found that the grain size of the mixed oxides SnO2 @ xAl2O3 is below 10 nm while for pure SnO2 it is over 41 nm, indicating that alumina can effectively prevent SnO2 from further growing up in the process of calcination. This is confirmed by the large increase in the specific surface area for mixed oxide samples. The PL emission showed great dependence on the structure properties analyzed by XRD and FTIR. The PL results recommend Al2O3@SnO2 core@shell heterostructure to be a promising short-wavelength luminescent optoelectronic devices for blue, UV, and laser light-emitting diodes.

  5. Phase transition and thermal expansion studies of alumina thin films prepared by reactive pulsed laser deposition.

    PubMed

    Balakrishnan, G; Thirumurugesan, R; Mohandas, E; Sastikumar, D; Kuppusami, P; Songl, J I

    2014-10-01

    Aluminium oxide (Al2O3) thin films were deposited on Si (100) substrates at an optimized oxygen partial pressure of 3 x 10(-3) mbar at room temperature by pulsed laser deposition (PLD). The films were characterized by high temperature X-ray diffraction (HTXRD), field emission scanning electron microscopy (FESEM) and atomic force microscopy (AFM). The HTXRD pattern showed the cubic y-Al2O3 phase in the temperature range 300-973 K. At temperatures ≥ 1073 K, the δ and θ-phases of Al2O3 were observed. The mean linear thermal expansion coefficient and volume thermal expansion coefficient of γ-Al2O3 was found to be 12.66 x 10(-6) K(-1) and 38.87 x 10(-6) K(-1) in the temperature range 300 K-1073 K. The field emission scanning electron microscopy revealed a smooth and structureless morphology of the films deposited on Si (100). The atomic force microscopy study indicated the increased crystallinity and surface roughness of the films after annealing at high temperature.

  6. 3D and 2D structural characterization of 1D Al/Al2 O3 biphasic nanostructures.

    PubMed

    Miró, M Martinez; Veith, M; Lee, J; Soldera, F; Mücklich, F; Bennewitz, R; Aktas, C

    2015-05-01

    1D Al/Al2 O3 nanostructures have been synthesized by chemical vapour deposition (CVD) of the molecular precursor [(t) BuOAlH2 ]2 . The deposited nanostructures grow chaotically on the substrate forming a layer with a high porosity (80%). Depending on the deposition time, diverse nanostructured surfaces with different distribution densities were achieved. A three-dimensional (3D) reconstruction has been evaluated for every nanostructure density using the Focus Ion Beam (FIB) tomography technique and reconstruction software tools. Several structural parameters such as porosity, Euler number, geometrical tortuosity and aspect ratio have been quantified through the analysis with specified software of the reconstructions. Additionally roughness of the prepared surfaces has been characterized at micro- and nanoscale using profilometry and AFM techniques, respectively. While high aspects ratio around 20-30 indicates a strong anisotropy in the structure, high porosity values (around 80%) is observed as a consequence of highly tangled geometry of such 1D nanostructures.

  7. Investigation of an 18 Å Al 2O 3 layer in a magnetic multilayer system by Rutherford and resonant scattering

    NASA Astrophysics Data System (ADS)

    Kling, A.; da Silva, M. F.; Soares, J. C.; Freitas, P. P.; Baptista, D. L.; Zawislak, F. C.

    2000-03-01

    Spin tunnel junctions, consisting of a metallic multilayer with a thin insulating buffer layer, in most cases Al 2O 3, show a large tunneling magnetoresistance (TMR) and are therefore of high interest for future magnetic read heads and non-volatile memories. The properties of these junctions are strongly influenced by the quality of the insulating buffer layer and its behavior during thermal treatment. Measurements with conventional RBS using devices in the as-deposited state and after different heat treatments at temperatures up to 200°C revealed changes in the stoichiometry and O distribution in the buffer layer that can be correlated with changes in the respective magnetic properties. The application of the 16O( 4He, 4He) 16O resonant scattering resonance with incident energies ranging from 3.01 to 3.35 MeV enabled the separate profiling of O in all parts of the sample: the partly oxidized sample surface, the aluminum oxide layer and the silicon dioxide layer covering the Si substrate. Simulations of the energy dependence of the O scattering yield showed that the oxygen is fully retained in the aluminum oxide buffer layer and no diffusion into adjacent metallic layers has occurred. The results indicate also that even Al 2O 3 layers with significantly lower thicknesses can be profiled with this method.

  8. Adsorption of Pd atoms on γ-Al 2O 3: a density functional study of metal-support interactions

    NASA Astrophysics Data System (ADS)

    Márquez, Antonio M.; Sanz, Javier Fernández

    2004-11-01

    The Pd/γ-Al2O3 interface at low coverage has been theoretically studied by means of periodic-supercell density functional calculations. The most stable (1 1 0) γ-Al2O3 clean surface plane has been modelled by using a six layers slab stoichiometric model of 40 atoms. A single Pd atom has been deposited on top of the surface in different positions, first freezing the surface structure and later allowing the surface to relax. The results indicate that the metal-support interaction is dominated by the strong Lewis acid properties of the tetrahedral cationic sites. It is also shown that in the octahedral cationic sites, adsorption of single Pd atoms induces a significant relaxation of the substrate. While the interaction energy with the preferred site is strong (∼3.8 eV), small differences are found for nearby sites, indicating a high mobility of Pd atoms on the surface, at least on the channels.

  9. Renewable H2 from glycerol steam reforming: effect of La2O3 and CeO2 addition to Pt/Al2O3 catalysts.

    PubMed

    Montini, Tiziano; Singh, Rakesh; Das, Piyali; Lorenzut, Barbara; Bertero, Nicolás; Riello, Pietro; Benedetti, Alvise; Giambastiani, Giuliano; Bianchini, Claudio; Zinoviev, Sergey; Miertus, Stanislav; Fornasiero, Paolo

    2010-05-25

    Glycerol is the main byproduct of biodiesel production and its increased production volume derives from the increasing demand for biofuels. The conversion of glycerol to hydrogen-rich mixtures presents an attractive route towards sustainable biodiesel production. Here we explored the use of Pt/Al(2)O(3)-based catalysts for the catalytic steam reforming of glycerol, evidencing the influence of La(2)O(3) and CeO(2) doping on the catalyst activity and selectivity. The addition of the latter metal oxides to a Pt/Al(2)O(3) catalyst is found to significantly improve the glycerol steam reforming, with high H(2) and CO(2) selectivities. A good catalytic stability is achieved for the Pt/La(2)O(3)/Al(2)O(3) system working at 350 degrees C, while the Pt/CeO(2)/Al(2)O(3) catalyst sharply deactivates after 20 h under similar conditions. Studies carried out on fresh and exhausted catalysts reveal that both systems maintain high surface areas and high Pt dispersions. Therefore, the observed catalyst deactivation can be attributed to coke deposition on the active sites throughout the catalytic process and only marginally to Pt nanoparticle sintering. This work suggests that an appropriate support composition is mandatory for preparing high-performance Pt-based catalysts for the sustainable conversion of glycerol into syngas.

  10. InP MOS capacitor and E-mode n-channel FET with ALD Al2O3-based high- k dielectric

    NASA Astrophysics Data System (ADS)

    Yen, Chih-Feng; Yeh, Min-Yen; Chong, Kwok-Keung; Hsu, Chun-Fa; Lee, Ming-Kwei

    2016-07-01

    The electrical characteristics of atomic-layer-deposited Al2O3/TiO2/Al2O3 on (NH4)2S-treated InP MOS capacitor and related MOSFET were studied. The electrical characteristics were improved from the reduction of native oxides and sulfur passivation on InP by (NH4)2S treatment. The high bandgap Al2O3 on TiO2 can reduce the thermionic emission, and the Al2O3 under TiO2 improves the interface-state density by self-cleaning. The high dielectric constant TiO2 is used to lower the equivalent oxide thickness. The leakage currents can reach 2.3 × 10-8 and 2.2 × 10-7 A/cm2 at ±2 MV/cm, respectively. The lowest interface-state density is 4.6 × 1011 cm-2 eV-1 with a low-frequency dispersion of 15 %. The fabricated enhancement-mode n-channel sulfur-treated InP MOSFET exhibits good electrical characteristics with a maximum transconductance of 146 mS/mm and effective mobility of 1760 cm2/V s. The subthreshold swing and threshold voltage are 117 mV/decade and 0.44 V, respectively.

  11. Effects of Al2O3 Nano-Particles on Corrosion Performance of Plasma Electrolytic Oxidation Coatings Formed on 6061 Aluminum Alloy

    NASA Astrophysics Data System (ADS)

    Vakili-Azghandi, Mojtaba; Fattah-alhosseini, Arash; Keshavarz, Mohsen K.

    2016-12-01

    Corrosion resistance improvement of plasma electrolyte oxidation coatings on 6061 aluminum alloy in silicate electrolyte containing Al2O3 nano-particles was studied, with particular emphasis on the microstructure, coating growth, and corrosion behavior in 3.5 wt.% NaCl solution. The microstructure of coatings, their thickness, and phase composition were characterized using scanning electron microscopy and x-ray diffraction. All characterization data showed that the maximum coating thickness and lowest amount of porosity were obtained in a low concentration of KOH, a high concentration of Na2SiO3, and moderate concentration of Al2O3 nano-particles in the electrolyte. This combination describes the optimum plasma electrolytic oxidation electrolyte, which has the best conductivity and oxidizing state, as well as the highest incorporation of electrolyte components in the coating growth process. On the other hand, incorporation and co-deposition of Al2O3 nano-particles were more pronounced than SiO3 2- ions in some level of molar concentration, which is due to the higher impact of electron discharge force on the adsorption of Al2O3 nano-particles. The electrochemical results showed that the best protective behavior was obtained in the sample having a coat with the lowest porosity and highest thickness.

  12. Electrical Discharge Machining of Al/7.5% Al2O3 MMCs Using Rotary Tool and Al2O3 Powder

    NASA Astrophysics Data System (ADS)

    Daneshmand, Saeed; Masoudi, Behnam; Monfared, Vahid

    Nowadays, composites are used in different parts of industries and it is one of the most important subjects. The most widely used reinforcements in metal matrix composites are Al2O3 and SiC fibers and particles which may be used in cutting-edge functional and structural applications of aerospace, defense, and automobile industries. Depending on the type of powder used, composite materials are difficult to machine by conventional cutting tools and methods. The most appropriate way for machining of these composites is electro discharge. For the reason of improving the surface quality, tool wear rate and material removal rate and reducing the cracks on the surface, Al2O3 powder was used. In this study, the effect of input parameters of EDM such as voltage, pulse current, pulse on-time and pulse off-time on output parameters like material removal rate, tool wear rate and surface roughness in both conditions of the rotary tool with powder mixed dielectric EDM and the stationary tool excluding powder mixed dielectric were investigated. The critical parameters were identified by variance analysis, while the optimum machining parameter settings were achieved via Taguchi method. Results show that using of powder mixed dielectric and rotary tool reduce the tool wear rate, surface roughness and the cracks on the surface significantly. It is found also that using of powder mixed dielectric and rotary tool improve the material removal rate due to improved flushing action and sparking efficiency. The analysis of variance showed that the pulse current and pulse on-time affected highly the MRR, TWR, surface roughness and surface cracks.

  13. The role of the spray pyrolysed Al2O3 barrier layer in achieving high efficiency solar cells on flexible steel substrates

    NASA Astrophysics Data System (ADS)

    Gledhill, Sophie E.; Zykov, Anton; Rissom, Thorsten; Caballero, Raquel; Kaufmann, Christian A.; Fischer, Christian-Herbert; Lux-Steiner, Martha; Efimova, Varvara; Hoffmann, Volker; Oswald, Steffen

    2011-07-01

    Thin film chalcopyrite solar cells grown on light-weight, flexible steel substrates are poised to enter the photovoltaic market. To guarantee good solar cell performance, the diffusion of iron from the steel into the CIGSe absorber material must be hindered during layer deposition. A barrier layer is thus required to isolate the solar module from the metal substrate, both electronically and chemically. Ideally the barrier layer would be deposited by a cheap roll-to-roll process suitable to coat flexible steel substrates. Aluminium oxide deposited by spray pyrolysis matches the criteria. The coating is homogeneous over rough substrates allowing comparatively thin barrier layers to be utilized. In this article, solar cell results are presented contrasting the device performance made with a barrier layer to that without a barrier layer. Secondary Ion Mass spectrometry (SIMS) measurements show that the spray pyrolysed barrier layer diminishes iron diffusion to the chalcopyrite absorber layer. The role of sodium, imperative for the growth of high efficiency chalcopyrite solar cells, and how it interacts with Al2O3 is discussed.

  14. Effect of Nano-Al2O3 on the Toxicity and Oxidative Stress of Copper towards Scenedesmus obliquus

    PubMed Central

    Li, Xiaomin; Zhou, Suyang; Fan, Wenhong

    2016-01-01

    Nano-Al2O3 has been widely used in various industries; unfortunately, it can be released into the aquatic environment. Although nano-Al2O3 is believed to be of low toxicity, it can interact with other pollutants in water, such as heavy metals. However, the interactions between nano-Al2O3 and heavy metals as well as the effect of nano-Al2O3 on the toxicity of the metals have been rarely investigated. The current study investigated copper toxicity in the presence of nano-Al2O3 towards Scenedesmus obliquus. Superoxide dismutase activity and concentration of glutathione and malondialdehyde in cells were determined in order to quantify oxidative stress in this study. Results showed that the presence of nano-Al2O3 reduced the toxicity of Cu towards S. obliquus. The existence of nano-Al2O3 decreased the growth inhibition of S. obliquus. The accumulation of copper and the level of oxidative stress in algae were reduced in the presence of nano-Al2O3. Furthermore, lower copper accumulation was the main factor that mitigated copper toxicity with the addition of nano-Al2O3. The decreased copper uptake could be attributed to the adsorption of copper onto nanoparticles and the subsequent decrease of available copper in water. PMID:27294942

  15. Effect of catalyst preparation conditions on the hydrodesulfurization of thiophene over Co-Mo/gamma-Al2O3.

    PubMed

    Chen, Chun-Liang; Lin, Shiow-Shyung; Liu, Tuan-Chi

    2002-01-01

    The purpose of this research was to study the effects of preparation conditions on the catalytic properties of the Co-Mo/gamma-Al2O3 catalyst. The work included catalyst preparations and reactions. In the preparations, cobalt-impregnated Mo/gamma-Al2O3 (designated as IcIM) was found to have a promoting effect on the hydrodesulfurization (HDS) of thiophene. Activity and stability of IcIM was higher than that of Mo/gamma-Al2O3. Conversely, when cobalt was added onto Mo/gamma-Al2O3 by the mechanical mixing method, no promoting effect was observed. Mo/gamma-Al2O3 was also prepared using the two different methods (incipient impregnation or mechanical mixing). The differently prepared Mo/gamma-Al203 resulted in no obvious difference in activity of IcIM. It was further found that Co-Mo/gamma-Al2O3 activity initially increased appreciably with Mo content and leveled off at Mo contents above 9 wt.%. The catalyst exhibited a maximum activity at Co/Mo ratio 0.3. The order in which metal species were added had a great influence on the activity of the Co-Mo/gamma-Al2O3 catalyst. Higher activity was obtained when Co was added into Mo/gamma-Al2O3 as opposed to Mo added into Co/gamma-Al2O3.

  16. Aqueous-phase reforming of n-BuOH over Ni/Al 2O 3 and Ni/CeO 2 catalysts

    NASA Astrophysics Data System (ADS)

    Roy, B.; Sullivan, H.; Leclerc, C. A.

    The aqueous-phase reforming (APR) of n-butanol (n-BuOH) over Ni(20 wt%) loaded Al 2O 3 and CeO 2 catalysts has been studied in this paper. Over 100 h of run time, the Ni/Al 2O 3 catalyst showed significant deactivation compared to the Ni/CeO 2 catalyst, both in terms of production rates and the selectivity to H 2 and CO 2. The Ni/CeO 2 catalyst demonstrated higher selectivity for H 2 and CO 2, lower selectivity to alkanes, and a lower amount of C in the liquid phase compared to the Ni/Al 2O 3 sample. For the Ni/Al 2O 3 catalyst, the selectivity to CO increased with temperature, while the Ni/CeO 2 catalyst produced no CO. For the Ni/CeO 2 catalyst, the activation energies for H 2 and CO 2 production were 146 and 169 kJ mol -1, while for the Ni/Al 2O 3 catalyst these activation energies were 158 and 175 kJ mol -1, respectively. The difference of the active metal dispersion on Al 2O 3 and CeO 2 supports, as measured from H 2-pulse chemisorption was not significant. This indicates deposition of carbon on the catalyst as a likely cause of lower activity of the Ni/Al 2O 3 catalyst. It is unlikely that carbon would build up on the Ni/CeO 2 catalyst due to higher oxygen mobility in the Ni doped non-stoichiometric CeO 2 lattice. Based on the products formed, the proposed primary reaction pathway is the dehydrogenation of n-BuOH to butaldehyde followed by decarbonylation to propane. The propane then partially breaks down to hydrogen and carbon monoxide through steam reforming, while CO converts to CO 2 mostly through water gas shift. Ethane and methane are formed via Fischer-Tropsch reactions of CO/CO 2 with H 2.

  17. Diffusion processes in Al2O3 scales - Void growth, grain growth, and scale growth

    NASA Technical Reports Server (NTRS)

    Smialek, J. L.; Gibala, R.

    1983-01-01

    The internal microstructure and growth kinetics of Al2O3 scales on Ni-15Cr-13Al (wt percent) are investigated by TEM and analyzed in relation to models of diffusivity. Polished arc-melted specimens were oxidized in 1-atm air at 1100 C for 0.1, 1.0, and 20 hours and ion-thinned for TEM at 100 kV. The frequency distribution of void size and grain size is determined for different oxidation times and scale depths. The kinetics of microvoid growth and of grain and scale growth are plotted and related via simplified models to lattice and grain-boundary oxygen diffusivity, respectively. Good agreement is found between model predictions and data obtained by Oishi and Kingery (1960) on oxygen diffusion in bulk Al2O3. The further implications and limitations of these findings are discssed.

  18. Adherent Al2O3 scales produced on undoped NiCrAl alloys

    NASA Technical Reports Server (NTRS)

    Smialek, James L.

    1986-01-01

    Repeated oxidation and polishing of high purity Ni-15Cr-13Al has dramatically changed its cyclic oxidation behavior from nonadherent to adherent. No apparent change in scale phase, morphology or interface structure occurred during this transition, dismissing any mechanism based on pegging, vacancy sink, or growth stress. The principle change that did occur was a reduction in the sulfur content from 10 ppmw to 3 ppmw after 25 cycles at 1120 C. These observations are used to support the model of Al2O3 scale adherence put forth by Smeggil et al. which claims that Al2O3 scale spallation occurs due to sulfur segregation and bond deterioration at the oxide-metal interface.

  19. Anormalous Optical Absorption in Porous Al_2O3 Host Matrix---Nano-Oxide Particle Nanocomposites

    NASA Astrophysics Data System (ADS)

    Zhang, Lide; Zhang, Biao; Mo, Chimei

    1996-03-01

    Porous Al_2O3 host matrix---nano-γ-Fe_2O3 particle composites (porous nanocomposite) were prepared by pyrolysis of Fe(NO_3)_39H_2O in porous nano- Al_2O3 matrix at 250^0C. Comparing with simple nanocomposites formed by mixing nano-γ-Fe_2O3 and compacting at room temperature, followed by annealing at 250^0C, the following anomalous optical behaviors were observed: for porous nanocomposite containing 5% Fe_2O_3, the aborption edge shifts obviously from 827nm to 543nm, and with increasing dopping amount of Fe_2O3 from 5% to 70%, blue shift phenomina decreases. Namely, the absorption edge moves from 543nm to 710nm. The mechanism of shift of the absorption edge is discussed.

  20. Fabrication of SiC/Al2O3 CMCs & their physical properties

    NASA Astrophysics Data System (ADS)

    Kumar, S. Santhosh; Devaiah, M.; Rajasekharan, T.

    2012-06-01

    SiC particulate reinforced Al2O3 matrix composites were fabricated using Directed Metal Oxidation (DIMOX) process. Continuous oxidation of an Al-8.5Si-1.5Mg-9Zn alloy in presence SiC perform with suitable dopants has led to the formation of the Al2O3 matrix. Ceramic composites with SiC volume fraction in the range of 0.35 - 0.43 were evaluated for effective co-efficient of linear thermal expansion (CTE) and elastic properties. The composites with high volume fraction of SiC showed a minimum dilatation with temperature (5.0 × 10-6 /K) and also enhancement in elastic properties (E: 262 GPa; G: 87 GPa; K: 189 GPa). Also, the elastic properties of the ceramic composites increased with SiC volume fraction.

  1. Interdiffusion in the MgO-Al2O3 spinel with or without some dopants

    NASA Astrophysics Data System (ADS)

    Zhang, P.; Debroy, T.; Seetharaman, S.

    1996-08-01

    With a view to seek an improved understanding of the DIMOX process, interdiffusion of polycrystalline MgO and Al2O3 in the temperature range 1473 to 1873 K was studied by diffusion couple experiments. The interdiffusivities in the spinel layer were calculated as functions of composition and temperature. The spinel portion of the phase diagram in the system MgO-Al2O3 was determined from carefully measured compositions at the phase boundaries, and the low temperature spinel region of the phase diagram was confirmed from the present results. For Zn2+ as dopant in alumina, the growth rate of spinel thickness seems to increase when compared with that of the diffusion couples without dopant. The samples containing Si4+ as dopant reveal the formation of a glass phase, and the effect of Si4+ on the diffusion process appears to be negligible.

  2. Mechanical properties of Al2O3 inverse opals by means of nanoindentation

    NASA Astrophysics Data System (ADS)

    Roa, J. J.; Coll, A.; Bermejo, S.; Jiménez-Piqué, E.; Alcubilla, R.; Castañer, L.; Llanes, L.

    2016-11-01

    In order to understand the mechanical behaviour of Al2O3 inverse opals, nanoindentation techniques have been implemented in material layers with three different microstructures, in terms of hollow or polystyrene spheres, with Al2O3 shells of distinct wall thickness. Different indenter tip geometries as well as contact loading conditions have been used, in order to induce different stress field and fracture events to the layers. Field emission scanning electron microscopy and focused ion beam have been employed to understand accommodation of plastic deformation induced during the indentation process. Results show that materials with polystyrene spheres exhibit higher hardness and modulus under sharp indentation, and cracking resistance under spherical indentation. Furthermore, deformation is discerned to be mainly governed by the rotation of the microspheres. In the case of the inverse opals made of hollow spheres, the main deformation mechanisms activated under indentation are the rearrangement and densification of them.

  3. Geant4 calculations for space radiation shielding material Al2O3

    NASA Astrophysics Data System (ADS)

    Capali, Veli; Acar Yesil, Tolga; Kaya, Gokhan; Kaplan, Abdullah; Yavuz, Mustafa; Tilki, Tahir

    2015-07-01

    Aluminium Oxide, Al2O3 is the most widely used material in the engineering applications. It is significant aluminium metal, because of its hardness and as a refractory material owing to its high melting point. This material has several engineering applications in diverse fields such as, ballistic armour systems, wear components, electrical and electronic substrates, automotive parts, components for electric industry and aero-engine. As well, it is used as a dosimeter for radiation protection and therapy applications for its optically stimulated luminescence properties. In this study, stopping powers and penetrating distances have been calculated for the alpha, proton, electron and gamma particles in space radiation shielding material Al2O3 for incident energies 1 keV - 1 GeV using GEANT4 calculation code.

  4. High brightness, narrow-band, Ti:Al2O3 oscillator

    NASA Astrophysics Data System (ADS)

    Brown, A. J. W.; Kangas, K. W.; Fisher, C. H.

    The injection-seeding of a short (about 30 cm) Ti:Al2O3 power oscillator with the output from a short-pulse, narrow-band, tunable, Ti:Al2O3 oscillator is reported. The frequency-doubled output from a Continuum YG681C Nd:YAG laser was used as the common pump source for both the seed laser and power oscillator. Good injection-seeding was observed with more than 20 ns delay; less delay than this resulted in poorer seeding. Minimizing the seed laser turn on time allowed harder pumping of the power oscillator, hence higher output energy, while maining good seeding. The spectral output from the power oscillator was analyzed using both an etalon and a 1-m MacPherson spectrometer. The seeded power oscillator is shown to closely replicate the seed laser output, operating on 2 or 3 longitudinal modes.

  5. Effect of sulfur removal on Al2O3 scale adhesion

    NASA Technical Reports Server (NTRS)

    Smialek, James L.

    1991-01-01

    The effect of removing sulfur impurity on the adhesion of Al2O3 scale to NiCrAl was investigated in four experiments. It was found that removing sulfur to concentration less than 1 ppm per weight is sufficient to produce a very significant degree of alpha-Al2O3 scale adhesion to undoped NiCrAl alloys. Results of experiments show that repeated oxidation, and polishing after each oxidation cycle, of pure NiCrAl alloy lowered sulfur content from 10 to 2 ppm by weight (presumably by removing the segregated interfacial layer after each cycle); thinner samples became adherent after fewer oxidation-polishing cycles because of more limited supply of sulfur. It was found that spalling in subsequent cyclic oxidation tests was a direct function of the initial sulfur content. The transition between the adherent and nonadherent behavior was modeled in terms of sulfur flux, sulfur content, and sulfur segregation.

  6. Visible luminescence of Al2O3 nanoparticles embedded in silica glass host matrix

    NASA Astrophysics Data System (ADS)

    El Mir, L.; Amlouk, A.; Barthou, C.

    2006-11-01

    This paper deals with the sol gel elaboration and defects photoluminescence (PL) examination of Al2O3 nanocrystallites (size ˜30 nm) confined in glass based on silica aerogel. Aluminium oxide aerogels were synthesized using esterification reaction for hydrolysis of the precursor and supercritical conditions of ethyl alcohol for drying. The obtained nanopowder was incorporated in SiO2 host matrix. After heating under natural atmosphere at 1150 °C for 2 h, the composite Al2O3/SiO2 (AS) exhibited a strong PL bands at 400 600 and 700 900 nm in 78 300 K temperature range. PL excitation (PLE) measurements show different origins of the emission. It was suggested that OH-related radiative centres and non-bridging oxygen hole centres (NBOHCs) were responsible for the bands at 400 600 and 700 900 nm, respectively.

  7. Modification of Fluorinated Al2O3 Surface by Irradiating H2 and O2 Plasmas

    NASA Astrophysics Data System (ADS)

    Miwa, Kazuhiro; Usami, Kenji; Takada, Noriharu; Sasaki, Koichi

    2009-12-01

    We irradiated H2 and O2 plasmas onto fluorinated Al2O3, which was prepared by exposing a virgin Al2O3 sample to an SF6/O2 plasma. The effects of the H2 plasma irradiation were the reduction of the AlOxFy (x + y = 1.5) and AlFx (x < 3) bonding components and the realization of smooth sample surface. It was observed that the irradiation of the H2 plasma induced Al-OH bonding. The Al-OH bonding was removed by the sequential irradiation of the O2 plasma after the H2 plasma irradiation. The O2 plasma irradiation also resulted in peroxidation and an increase in surface roughness.

  8. Theory of the clean and hydrogenated Al2O3(0001)-(1×1) surfaces

    NASA Astrophysics Data System (ADS)

    Felice, Rosa Di; Northrup, John E.

    1999-12-01

    We present the results of a first principles investigation of the equilibrium properties of c-plane α-Al2O3 surfaces. The stable structure for the 1×1 clean surface is Al terminated with a stoichiometric composition, while other terminations are unstable independent of surface preparation conditions. We discuss the implications of our results in the frame of possible extended reconstructions. For 1 monolayer of H coverage, we find that the preferred structure has OH dimers both perpendicular and nearly parallel to the surface. H-terminated surfaces may form in suitable preparation conditions. We discuss our results in terms of water adsorption and atomic layer epitaxy of α-Al2O3(0001).

  9. Effect of hydrogen on Al2O3/Cu interfacial structure and adhesion

    NASA Astrophysics Data System (ADS)

    Wang, Xiao-Gang; Smith, John R.; Scheffler, Matthias

    2002-08-01

    We have carried out an ab initio investigation of the effect of hydrogen on the Al2O3/Cu interface. H on the Al2O3 surface can play a bridging role in the formation of the interface. The interfacial OH bond is stable in the presence of two atomic layers of Cu. In contrast, an Al monolayer would dissociate the surface OH bond. For thicker Cu, one-third of a monolayer of H remains stable in the interface, lowering the work of separation by 2.3 J/m2. The interfacial work of separation remains larger than that of bulk Cu, however. These results are consistent with available experimental data.

  10. Luminescence study of nanosized Al2O3:Tb3+ obtained by gas-dispersed synthesis

    NASA Astrophysics Data System (ADS)

    Berezovskaya, I. V.; Poletaev, N. I.; Khlebnikova, M. E.; Zatovsky, I. V.; Bychkov, K. L.; Efryushina, N. P.; Khomenko, O. V.; Dotsenko, V. P.

    2016-09-01

    Terbium-doped Al2O3 samples were obtained by gas-dispersed synthesis. It was shown that the resulting powders, with particle sizes of 10-70 nm, consist of a mixture of transition aluminas, among which the δ *-polymorph is dominant. The luminescence properties of Al2O3:Tb3+ have been studied upon excitation in the UV-visible range of the spectrum. It was found that Tb3+ ions cause several groups of inhomogeneously broadened emission bands in the range of 470-640 nm, which are characteristic for disordered materials. In addition, the emission spectra contain a broad band at about 450 nm and several narrower ones in the 680-720 nm region. These features are attributed to surface defects and impurity Cr3+ ions occupying Al3+ octahedral positions, respectively.

  11. Protective Al2O3 scale formation on NbAl3-base alloys

    NASA Technical Reports Server (NTRS)

    Doychak, J.; Hebsur, M. G.

    1991-01-01

    The oxidation of NbAl3 with additions of Cr and Y was studied to determine the mechanisms of the beneficial effects of these elements upon oxidation. Cr additions to the binary NbAl3 alloy of up to 6.8 at. percent reduced the scale growth rates and promoted alpha-Al2O3 formation over much longer times relative to binary NbAl3. A major effect of Cr is to form a layer of AlNbCr at the metal/scale interface, which is inherently more oxidation-resistant than the matrix alloy in the long term. Yttrium additions to a Cr-containing alloy improved the scale growth rate and adherence and changed the scale microstructure to mimic that of a typical protective Al2O3 scale.

  12. Pressure sintering of Si3N4-Al2O3 /Sialon/

    NASA Technical Reports Server (NTRS)

    Yeh, H. C.; Sanders, W. A.; Fiyalko Luttner, J. L.

    1977-01-01

    Essentially pore-free Sialon bodies were obtained by pressure sintering for three blends (mol ratios of 4:1, 2:3, and 3:2) of Si3N4 and Al2O3 powders under the conditions of 27.6 MN/sq m and a temperature of 1700 C for 2 h. These dense bodies consist mainly of a Sialon solid solution with a minor amount of a particular second phase. The higher the Al2O3 content (20 to 60 mol% range) in Sialon, the higher the densification rate. Fully dense bodies can be obtained at temperatures as low as 1500 C at 27.6 MN/sq m for 2 h with no second phase detectable by X-ray diffraction. A 100% dense body can be obtained by heating at 1700 C at 27.6 MN/sq m without a holding time.

  13. Electron paramagnetic resonance of Er3+ ions in a polycrystalline α-Al2O3

    NASA Astrophysics Data System (ADS)

    Asatryan, H. R.; Zakharchenya, R. I.; Kutsenko, A. B.; Babunts, R. A.; Baranov, P. G.

    2007-06-01

    The EPR spectra of rare-earth Er3+ ions in a polycrystalline corundum α-Al2O3 synthesized by the sol-gel technology were revealed. It is shown that the EPR spectra belong to the Er3+ ions in the ground state corresponding to the lower Stark sublevel of the 4 I 15/2 term and can be described by the spin Hamiltonian of axial symmetry with an effective spin S = 1/2 and the g tensor with components g ‖ = 12.176 and g ⊥ = 4.14. The average value of the g tensor ( = 6.82) corresponds to the Γ7 state in a cubic field. Erbium is assumed to substitute for aluminum in the Al2O3 corundum crystal. The local symmetry C 3 of the Al3+ ion remains despite the pronounced expansion of the lattice around the Er3+ ion.

  14. Al2O3 Nanoparticle Addition to Commercial Magnesium Alloys: Multiple Beneficial Effects

    PubMed Central

    Paramsothy, Muralidharan; Chan, Jimmy; Kwok, Richard; Gupta, Manoj

    2012-01-01

    The multiple beneficial effects of Al2O3 nanoparticle addition to cast magnesium based systems (followed by extrusion) were investigated, constituting either: (a) enhanced strength; or (b) simultaneously enhanced strength and ductility of the corresponding magnesium alloys. AZ31 and ZK60A nanocomposites containing Al2O3 nanoparticle reinforcement were each fabricated using solidification processing followed by hot extrusion. Compared to monolithic AZ31 (tension levels), the corresponding nanocomposite exhibited higher yield strength (0.2% tensile yield strength (TYS)), ultimate strength (UTS), failure strain and work of fracture (WOF) (+19%, +21%, +113% and +162%, respectively). Compared to monolithic AZ31 (compression levels), the corresponding nanocomposite exhibited higher yield strength (0.2% compressive yield strength (CYS)) and ultimate strength (UCS), lower failure strain and higher WOF (+5%, +5%, −4% and +11%, respectively). Compared to monolithic ZK60A (tension levels), the corresponding nanocomposite exhibited lower 0.2% TYS and higher UTS, failure strain and WOF (−4%, +13%, +170% and +200%, respectively). Compared to monolithic ZK60A (compression levels), the corresponding nanocomposite exhibited lower 0.2% CYS and higher UCS, failure strain and WOF (−10%, +7%, +15% and +26%, respectively). The capability of Al2O3 nanoparticles to enhance the properties of cast magnesium alloys in a way never seen before with micron length scale reinforcements is clearly demonstrated.

  15. Tribological Behavior of A356/Al2O3 Surface Nanocomposite Prepared by Friction Stir Processing

    NASA Astrophysics Data System (ADS)

    Mazaheri, Y.; Karimzadeh, F.; Enayati, M. H.

    2014-04-01

    Surface A356 aluminum alloy matrix composites containing micro and nanosized Al2O3 are prepared by a new approach utilizing high-velocity oxy-fuel spraying and friction stir processing (FSP). Optical and scanning electron microscopy, microhardness, and wear tests were used to characterize the surface composites. Results indicated that, the presence of Al2O3 in matrix can improve the mechanical properties of specimens. The microhardness of surface composites containing micro and nanosized Al2O3 were 89.8 ± 2.6 HV and 109.7 ± 2.5 HV, respectively, which were higher than those for the as-received (79.6 ± 1.1 HV) and the FSPed A356-T6 with no alumina powder (66.8 ± 0.9 HV). Surface composites revealed low friction coefficients and wear rates, which were significantly lower than those obtained for substrate. The wear mass losses of the as-received, the FSPed, and surface micro and nanocomposite specimens after 500-m sliding distance were 50.5, 55.6, 31, and 17.2 mg, respectively. Scanning electron microscopy tests revealed different wear mechanisms on the surface of the wear test specimens.

  16. Paramagnetic Spins on -Al2O3 with Varied Surface Termination

    NASA Astrophysics Data System (ADS)

    Ray, Keith; Lee, Donghwa; Adelstein, Nicole; Dubois, Jonathan; Lordi, Vincenzo

    Superconducting qubits (SQs) are promising building blocks for a quantum computer, however, coherence in SQs is reduced by unintended coupling to magnetic noise sources. The microscopic origins of the magnetic noise have not been satisfactorily characterized. Building on previous computational studies of magnetic spins induced by molecules adsorbed on bare Al terminated Al2O3, we present a density functional theory investigation of magnetic noise associated with other Al2O3 surfaces likely to be encountered in experiment. We calculate the exchange interaction between native defects and adsorbed molecules, as well as the magnetic states energy splitting and anisotropy, on fully hydroxylated Al2O3, with and without a water over-layer. We also present simulated x-ray adsorption and x-ray magnetic circular dichroism spectra of these systems with the aim of aiding experimental surface characterization. This work was performed under the auspices of the U.S. Department of Energy by Lawrence Livermore National Laboratory under contract DE-AC52-07NA27344.

  17. The electrical conductivity of Al2O3 under shock-compression

    PubMed Central

    Liu, Hanyu; Tse, John S.; Nellis, W. J.

    2015-01-01

    Sapphire (Al2O3) crystals are used below 100 GPa as anvils and windows in dynamic-compression experiments because of their transparency and high density. Above 100 GPa shock pressures, sapphire becomes opaque and electrically conducting because of shock-induced defects. Such effects prevent temperature and dc conductivity measurements of materials compressed quasi-isentropically. Opacities and electrical conductivities at ~100 GPa are non-equilibrium, rather than thermodynamic parameters. We have performed electronic structure calculations as a guide in predicting and interpreting shock experiments and possibly to discover a window up to ~200 GPa. Our calculations indicate shocked sapphire does not metallize by band overlap at ~300 GPa, as suggested previously by measured non-equilibrium data. Shock-compressed Al2O3 melts to a metallic liquid at ~500 GPa and 10,000 K and its conductivity increases rapidly to ~2000 Ω−1cm−1 at ~900 GPa. At these high shock temperatures and pressures sapphire is in thermal equilibrium. Calculated conductivity of Al2O3 is similar to those measured for metallic fluid H, N, O, Rb, and Cs. Despite different materials, pressures and temperatures, and compression techniques, both experimental and theoretical, conductivities of all these poor metals reach a common end state typical of strong-scattering disordered materials. PMID:26239369

  18. Theoretical insight into Cobalt subnano-clusters adsorption on α-Al2O3 (0001)

    NASA Astrophysics Data System (ADS)

    Gao, Fen-e.; Ren, Jun; Wang, Qiang; Li, Debao; Hou, Bo; Jia, Litao; Cao, Duanlin

    2017-02-01

    The investigation on the structural stability, nucleation, growth and interaction of cobalt cluster Con(n=2-7) on the α-Al2O3(0001) surface by using density functional theory methods has been reported. Energetically, the most favorable adsorption sites were identified and the strongest adsorption energy cluster is the tetrahedral Co4 cluster. On the other hand, the nucleation of Con(n=2-7) clusters on the surface is exothermic and thermodynamically favorable. Moreover, even-odd alternation was found with respect to clusters nucleation as a function of the number of cobalt atoms (for n=1-7). Meanwhile, the Con clusters can be adsorbed on the surface stably owing to the charge transfer from Co atoms to Al and O atoms of the Al2O3 substrate. In addition, we establish the crucial importance of monomer, dimer and trimer diffusion on the surface. The diffusion of the monomer cobalt from Al(3) to O(5) or O(5) to Al(4) site is quite easy on the Al2O3(0001) surface, whereas the diffusion of the Co2 dimer is thermodynamically unfavorable by compared with that of the Co adatom and Co3 trimer.

  19. Insight into the effects of different ageing protocols on Rh/Al2O3 catalyst

    NASA Astrophysics Data System (ADS)

    Zhao, Baohuai; Ran, Rui; Cao, Yidan; Wu, Xiaodong; Weng, Duan; Fan, Jun; Wu, Xueyuan

    2014-07-01

    In this work, a catalyst of Rh loaded on Al2O3 was prepared by impregnating method with rhodium nitrate aqueous solution as the Rh precursor. The catalyst was aged under different protocols (lean, rich, inert and cyclic) to obtain several aged samples. All the Rh/Al2O3 samples were characterized by X-ray diffraction (XRD), Brunauer-Emmett-Teller (BET) method, CO-chemisorption, H2-temperature programmed reduction (H2-TPR), transmission electron microscope (TEM) and X-ray photoelectron spectroscopy (XPS). It was found that a specific ageing treatment could strongly affect the catalytic activity. The N2 aged and the H2 aged samples had a better catalytic activity for CO + NO reaction than the fresh sample while the air aged and the cyclic aged samples exhibited much worse activity. More surface Rh content and better reducibility were obtained in the N2 and the H2 aged samples and the Rh particles existed with an appropriate size, which were all favorable to the catalytic reaction. However, the air and the cyclic ageing protocols induced a strong interaction between Rh species and the Al2O3 support, which resulted in a severe sintering of particles of Rh species and the loss of active sites. The structure evolution scheme of the catalysts aged in different protocols was also established in this paper.

  20. Room Temperature Radiolytic Synthesized Cu@CuAlO2-Al2O3 Nanoparticles

    PubMed Central

    Abedini, Alam; Saion, Elias; Larki, Farhad; Zakaria, Azmi; Noroozi, Monir; Soltani, Nayereh

    2012-01-01

    Colloidal Cu@CuAlO2-Al2O3 bimetallic nanoparticles were prepared by a gamma irradiation method in an aqueous system in the presence of polyvinyl pyrrolidone (PVP) and isopropanol respectively as a colloidal stabilizer and scavenger of hydrogen and hydroxyl radicals. The gamma irradiation was carried out in a 60Co gamma source chamber with different doses up to 120 kGy. The formation of Cu@CuAlO2-Al2O3 nanoparticles was observed initially by the change in color of the colloidal samples from colorless to brown. Fourier transform infrared spectroscopy (FTIR) confirmed the presence of bonds between polymer chains and the metal surface at all radiation doses. Results of transmission electron microscopy (TEM), energy dispersive X-ray spectrometry (EDX), and X-ray diffraction (XRD) showed that Cu@CuAlO2-Al2O3 nanoparticles are in a core-shell structure. By controlling the absorbed dose and precursor concentration, nanoclusters with different particle sizes were obtained. The average particle diameter increased with increased precursor concentration and decreased with increased dose. This is due to the competition between nucleation, growth, and aggregation processes in the formation of nanoclusters during irradiation. PMID:23109893

  1. A short-time fading study of Al2O3:C

    NASA Astrophysics Data System (ADS)

    Nascimento, L. F.; Vanhavere, F.; Silva, E. H.; Deene, Y. De

    2015-01-01

    This paper studies the short-time fading from Al2O3:C by measuring optically stimulated luminescence (OSL) signals (Total OSL: TOSL, and Peak OSL: POSL) from droplets and Luxel™ pellets. The influence of various bleaching regimes (blue, green and white) and light power is compared. The fading effect is the decay of the OSL signal in the dark at room temperature. Al2O3:C detectors were submitted to various bleaching regimes, irradiated with a reference dose and read out after different time spans. Investigations were carried out using 2 mm size droplet detectors, made of thin Al2O3:C powder mixed with a photocured polymer. Tests were compared to Luxel™-type detectors (Landauer Inc.). Short-time post-irradiation fading is present in OSL results (TOSL and POSL) droplets for time spans up to 200 s. The effect of short-time fading can be lowered/removed when treating the detectors with high-power and/or long time bleaching regimes; this result was observed in both TOSL and POSL from droplets and Luxel™.

  2. Simulation of pressure-induced phase transition in liquid and amorphous Al2 O3

    NASA Astrophysics Data System (ADS)

    Hoang, Vo Van; Oh, Suhk Kun

    2005-08-01

    We investigated the pressure-induced structural transformation in liquid and amorphous Al2O3 by the molecular dynamics (MD) method. Simulations were done in the basic cube under periodic boundary conditions containing 3000 ions with Born-Mayer type pair potentials. The structure of the amorphous Al2O3 model with real density at ambient pressure is in good agreement with Lamparter’s experiment. In order to study the amorphous-amorphous phase transition, 23 models of amorphous alumina at the temperature of 350K and at densities ranging from 2.83to5.0gcm-3 had been built. The microstructure of the Al2O3 systems had been analyzed through pair radial distribution functions, coordination number distributions, interatomic distances, and bond-angle distributions. Here we found clear evidence of a structural transition in amorphous alumina from a tetrahedral to an octahedral network upon compression. According to our results, this transformation occurred at densities ranging from 3.6to4.05gcm-3 . We also presented the amorphous-amorphous phase transition from an octahedral to a tetrahedral network structure upon decompression at densities ranging from 5.00to2.83gcm-3 . Also, the same study was carried out for the liquid state of the system at the temperature of 3500K , and the liquid-liquid phase transition had been discussed.

  3. Solid state reduction of chromium (VI) pollution for Al2O3-Cr metal ceramics application

    NASA Astrophysics Data System (ADS)

    Zhu, Hekai; Fang, Minghao; Huang, Zhaohui; Liu, Yangai; Tang, Hao; Min, Xin; Wu, Xiaowen

    2016-04-01

    Reduction of chromium (VI) from Na2CrO4 through aluminothermic reaction and fabrication of metal-ceramic materials from the reduction products have been investigated in this study. Na2CrO4 could be successfully reduced into micrometer-sized Cr particles in a flowing Ar atmosphere in presence of Al powder. The conversion ratio of Na2CrO4 to metallic Cr attained 96.16% efficiency. Al2O3-Cr metal-ceramic with different Cr content (5 wt%, 10 wt%, 15 wt%, 20 wt%) were further prepared from the reduction product Al2O3-Cr composite powder, and aluminum oxide nanopowder via pressure-less sintering. The phase composition, microstructure and mechanical properties of metal-ceramic composites were characterized to ensure the potential of the Al2O3-Cr composite powder to form ceramic materials. The highest relative density and bending strength can reach 93.4% and 205 MP, respectively. The results indicated that aluminothermic reduction of chromium (VI) for metal-ceramics application is a potential approach to remove chromium (VI) pollutant from the environment.

  4. Free standing TiO2 nanotube array electrodes with an ultra-thin Al2O3 barrier layer and TiCl4 surface modification for highly efficient dye sensitized solar cells.

    PubMed

    Gao, Xianfeng; Guan, Dongsheng; Huo, Jingwan; Chen, Junhong; Yuan, Chris

    2013-11-07

    Dye sensitized solar cells were fabricated with free standing TiO2 nanotube (TNT) array films, which were prepared by template assisted atomic layer deposition (ALD) with precise wall thickness control. Efforts to improve the photovoltaic performance were made by using Al2O3 barrier layer coating in conjunction with TiCl4 surface modification. An Al2O3 thin layer was deposited on the TNT electrode by ALD to serve as the charge recombination barrier, but it suffers from the drawback of decreasing the photoelectron injection from dye into TiO2 when the barrier layer became too thick. With the TiCl4 treatment in combination with optimal thickness coating, this problem could be avoided. The co-surface treated electrode presents superior surface property with low recombination rate and good electron transport property. A high conversion efficiency of 8.62% is obtained, which is about 1.8 times that of the device without surface modifications.

  5. Technical Performance of the Luxel Al2O3:C Optically Stimulated Luminescence Dosemeter Element at Radiation Oncology and Nuclear Accident Dose Levels

    SciTech Connect

    Miller, Steven D.; Murphy, Mark K.

    2006-12-12

    The dose ranges typical for radiation oncology and nuclear accident dosimetry are on the order of 2?70 Gy and 0.1?5 Gy, respectively. In terms of solid-state passive dosimetry; thermoluminescent (TL) materials historically have been used extensively for these two applications, with silver-halide, leuco-dye, and BaFBr:Eu-based films being used on a more limited basis than TL for radiation oncology. This present work provides results on the performance of a film based on an aluminum oxide, Al2