Science.gov

Sample records for al2o3 films formed

  1. Effect of atomic layer deposition temperature on current conduction in Al2O3 films formed using H2O oxidant

    NASA Astrophysics Data System (ADS)

    Hiraiwa, Atsushi; Matsumura, Daisuke; Kawarada, Hiroshi

    2016-08-01

    To develop high-performance, high-reliability gate insulation and surface passivation technologies for wide-bandgap semiconductor devices, the effect of atomic layer deposition (ALD) temperature on current conduction in Al2O3 films is investigated based on the recently proposed space-charge-controlled field emission model. Leakage current measurement shows that Al2O3 metal-insulator-semiconductor capacitors formed on the Si substrates underperform thermally grown SiO2 capacitors at the same average field. However, using equivalent oxide field as a more practical measure, the Al2O3 capacitors are found to outperform the SiO2 capacitors in the cases where the capacitors are negatively biased and the gate material is adequately selected to reduce virtual dipoles at the gate/Al2O3 interface. The Al2O3 electron affinity increases with the increasing ALD temperature, but the gate-side virtual dipoles are not affected. Therefore, the leakage current of negatively biased Al2O3 capacitors is approximately independent of the ALD temperature because of the compensation of the opposite effects of increased electron affinity and permittivity in Al2O3. By contrast, the substrate-side sheet of charge increases with increasing ALD temperature above 210 °C and hence enhances the current of positively biased Al2O3 capacitors more significantly at high temperatures. Additionally, an anomalous oscillatory shift of the current-voltage characteristics with ALD temperature was observed in positively biased capacitors formed by low-temperature (≤210 °C) ALD. This shift is caused by dipoles at the Al2O3/underlying SiO2 interface. Although they have a minimal positive-bias leakage current, the low-temperature-grown Al2O3 films cause the so-called blisters problem when heated above 400 °C. Therefore, because of the absence of blistering, a 450 °C ALD process is presently the most promising technology for growing high-reliability Al2O3 films.

  2. Hard α-Al2O3 Film Coating on Industrial Roller Using Aerosol Deposition Method

    NASA Astrophysics Data System (ADS)

    Seto, Naoki; Endo, Kazuteru; Sakamoto, Nobuo; Hirose, Shingo; Akedo, Jun

    2014-12-01

    It is well known that α-Al2O3 forms very hard, highly insulating, smooth films. There is demand for the use of such films instead of conventional hard, smooth films; For example, industrial rollers such as calendering rollers etc. are always required to have a harder and smoother surface than conventional rollers. Therefore, this work investigated the specification of α-Al2O3 films, e.g., their wear resistance and chemical stability, using various tests. This paper also discusses whether α-Al2O3 film can take the place of Cr plating film as a hard, smooth film by comparing their wear resistance and chemical stability.

  3. Antimicrobial effect of Al2O3, Ag and Al2O3/Ag thin films on Escherichia coli and Pseudomonas putida

    NASA Astrophysics Data System (ADS)

    Angelov, O.; Stoyanova, D.; Ivanova, I.; Todorova, S.

    2016-10-01

    The influence of Al2O3, Ag and Al2O3/Ag thin films on bacterial growth of Gramnegative bacteria Pseudomonas putida and Escherichia coli is studied. The nanostructured thin films are deposited on glass substrates without intentional heating through r.f. magnetron sputtering in Ar atmosphere of Al2O3 and Ag targets or through sequential sputtering of Al2O3 and Ag targets, respectively. The individual Ag thin films (thickness 8 nm) have a weak bacteriostatic effect on Escherichia coli expressed as an extended adaptive phase of the bacteria up to 5 hours from the beginning of the experiment, but the final effect is only 10 times lower bacterial density than in the control. The individual Al2O3 film (20 nm) has no antibacterial effect against two strains E. coli - industrial and pathogenic. The Al2O3/Ag bilayer films (Al2O3 20 nm/Ag 8 nm) have strong bactericidal effect on Pseudomonas putida and demonstrate an effective time of disinfection for 2 hours. The individual films Al2O3 and Ag have not pronounced antibacterial effect on Pseudomonas putida. A synergistic effect of Al2O3/Ag bilayer films in formation of oxidative species on the surface in contact with the bacterial suspension could be a reason for their antimicrobial effect on E. coli and P. putida.

  4. Preparation of γ-Al2O3 films by laser chemical vapor deposition

    NASA Astrophysics Data System (ADS)

    Gao, Ming; Ito, Akihiko; Goto, Takashi

    2015-06-01

    γ- and α-Al2O3 films were prepared by chemical vapor deposition using CO2, Nd:YAG, and InGaAs lasers to investigate the effects of varying the laser wavelength and deposition conditions on the phase composition and microstructure. The CO2 laser was found to mostly produce α-Al2O3 films, whereas the Nd:YAG and InGaAs lasers produced γ-Al2O3 films when used at a high total pressure. γ-Al2O3 films had a cauliflower-like structure, while the α-Al2O3 films had a dense and columnar structure. Of the three lasers, it was the Nd:YAG laser that interacted most with intermediate gas species. This promoted γ-Al2O3 nucleation in the gas phase at high total pressure, which explains the cauliflower-like structure of nanoparticles observed.

  5. Hydrogen induced passivation of Si interfaces by Al2O3 films and SiO2/Al2O3 stacks

    NASA Astrophysics Data System (ADS)

    Dingemans, G.; Beyer, W.; van de Sanden, M. C. M.; Kessels, W. M. M.

    2010-10-01

    The role of hydrogen in Si surface passivation is experimentally identified for Al2O3 (capping) films synthesized by atomic layer deposition. By using stacks of SiO2 and deuterated Al2O3, we demonstrate that hydrogen is transported from Al2O3 to the underlying SiO2 already at relatively low annealing temperatures of 400 °C. This leads to a high level of chemical passivation of the interface. Moreover, the thermal stability of the passivation up to 800 °C was significantly improved by applying a thin Al2O3 capping film on the SiO2. The hydrogen released from the Al2O3 film favorably influences the passivation of Si interface defects.

  6. Non-volatile Al2O3 Memory using Nanoscale Al-rich Al2O3 Thin Film as a Charge Storage Layer

    NASA Astrophysics Data System (ADS)

    Nakata, Shunji; Saito, Kunio; Shimada, Masaru

    2006-04-01

    This article describes the fabrication process and capacitance-voltage (C-V) characteristics of a new non-volatile Al2O3 memory with nanoscale thin film deposited by electron-cyclotron-resonance sputtering. Al-rich Al2O3 shows characteristics somewhere between Al and Al2O3 in the refractive index and wet etching rate. C-V characteristics of Al-rich Al2O3 memory show a large hysteresis window due to the Al-rich structure, while there is no hysteresis window in the case of stoichiometric Al2O3. This memory is expected to stay non-volatile for several years or more because the capacitance value after writing and erasing operation remained almost unchanged after 4 h at T=85 °C. Also, another new memory structure comprising SiO2/Al2O3 and the Al-rich Al2O3 structure is proposed, which features increased mobility due to the reduction of electron scattering at the Si/Al2O3 interface.

  7. Comparison of ALD and IBS Al2O3 films for high power lasers

    NASA Astrophysics Data System (ADS)

    Liu, Hao; Jensen, Lars; Becker, Jürgen; Wurz, Marc Christopher; Ma, Ping; Ristau, Detlev

    2016-12-01

    Atomic layer deposition (ALD) has been widely studied in Micro-electronics due to its self-terminating property. ALD also grows film coatings with precise thickness and nodular-free structure, which are desirable properties for high power coatings. The depositing process was studied to produce uniform, stable and economic Al2O3 single layers. The layer properties relevant to high power laser industry were studied and compared with IBS Al2O3 single layers. ALD Al2O3 showed a stable growth of 0.104 nm/cycle, band gap energy of 6.5 eV and tensile stress of about 480 MPa. It also showed a low absorption at wavelength 1064 nm within several ppm, and LIDT above 30 J/cm2. These properties are superior to the reference IBS Al2O3 single layers and indicate a high versatility of ALD Al2O3 for high power coatings.

  8. The FTIR studies of gels and thin films of Al2O3-TiO2 and Al2O3-TiO2-SiO2 systems.

    PubMed

    Adamczyk, Anna; Długoń, Elżbieta

    2012-04-01

    In this work, samples in form of bulk ones and thin films were obtained using the sol-gel method. The bulk samples were heated at different temperatures (500 °C, 850 °C and 1100 °C) corresponding to the annealing process of coatings, deposited on different substrates by dipping and pulling out samples from the proper sol with the stable speed. Thin films of both Al2O3-TiO2 and Al2O3-TiO2-SiO2 systems were deposited on carbon, steel and titanium substrates in two different ways: as single layers obtained from Al2O3 sol, TiO2 sol and Al2O3 sol or deposited as mixed coatings from Al2O3-TiO2 sol as well as Al2O3-TiO2-SiO2 one. All bulk samples were studied by the FTIR spectroscopy and the X-ray diffractometry while thin films were also investigated by the electron microscopy. In the IR spectra of Al2O3-TiO2 samples, as well as gels and coatings, bands due to the vibrations of AlO bonds of the octahedrally and tetrahedrally coordinated aluminum were observed. The IR spectra of samples of Al2O3-TiO2-SiO2 system differ from that of Al2O3-TiO2 ones in presence of bands assigned to the SiO bond vibrations and in positions of bands due to AlO bond vibrations. In all spectra of bulk samples and coatings, the positions of TiO bond vibrations were ascribed basing on the IR spectra of the pure anatase and rutile.

  9. Space-charge-controlled field emission model of current conduction through Al2O3 films

    NASA Astrophysics Data System (ADS)

    Hiraiwa, Atsushi; Matsumura, Daisuke; Kawarada, Hiroshi

    2016-02-01

    This study proposes a model for current conduction in metal-insulator-semiconductor (MIS) capacitors, assuming the presence of two sheets of charge in the insulator, and derives analytical formulae of field emission (FE) currents under both negative and positive bias. Since it is affected by the space charge in the insulator, this particular FE differs from the conventional FE and is accordingly named the space-charge-controlled (SCC) FE. The gate insulator of this study was a stack of atomic-layer-deposition Al2O3 and underlying chemical SiO2 formed on Si substrates. The current-voltage (I-V) characteristics simulated using the SCC-FE formulae quantitatively reproduced the experimental results obtained by measuring Au- and Al-gated Al2O3/SiO2 MIS capacitors under both biases. The two sheets of charge in the Al2O3 films were estimated to be positive and located at a depth of greater than 4 nm from the Al2O3/SiO2 interface and less than 2 nm from the gate. The density of the former is approximately 1 × 1013 cm-2 in units of electronic charge, regardless of the type of capacitor. The latter forms a sheet of dipoles together with image charges in the gate and hence causes potential jumps of 0.4 V and 1.1 V in the Au- and Al-gated capacitors, respectively. Within a margin of error, this sheet of dipoles is ideally located at the gate/Al2O3 interface and effectively reduces the work function of the gate by the magnitude of the potential jumps mentioned above. These facts indicate that the currents in the Al2O3/SiO2 MIS capacitors are enhanced as compared to those in ideal capacitors and that the currents in the Al-gated capacitors under negative bias (electron emission from the gate) are more markedly enhanced than those in the Au-gated capacitors. The larger number of gate-side dipoles in the Al-gated capacitors is possibly caused by the reaction between the Al and Al2O3, and therefore gate materials that do not react with underlying gate insulators should be chosen

  10. Effects of annealing on properties of Al2O3 monolayer film at 355 nm

    NASA Astrophysics Data System (ADS)

    Tu, Feifei; Wang, Hu; Xing, Huanbin; Zheng, Ruxi; Zhang, Weili; Yi, Kui

    2015-07-01

    Al2O3 monolayer films were deposited on fused silica substrate and K9 glass substrate by electron-beam deposition. Annealing as a general post-treatment was used to enhance the quality of the Al2O3 coatings. The optical properties of the films were analyzed from the transmission spectra of the samples. The composition of the samples before and after annealing were measured by X-ray photoelectron spectroscopy (XPS). According to the analysis of the results, it can be found that the oxidation degree of the coatings increases after annealing in O2 inside coating chamber. The laser-induced damage thresholds of the Al2O3 films can be increased after the annealing process. Finally, the damage morphologies of the Al2O3 coatings were analyzed.

  11. Luminescent properties of Al2O3:Ce single crystalline films under synchrotron radiation excitation

    NASA Astrophysics Data System (ADS)

    Zorenko, Yu.; Zorenko, T.; Gorbenko, V.; Savchyn, V.; Voznyak, T.; Fabisiak, K.; Zhusupkalieva, G.; Fedorov, A.

    2016-09-01

    The paper is dedicated to study the luminescent and scintillation properties of the Al2O3:Ce single crystalline films (SCF) grown by LPE method onto saphire substrates from PbO based flux. The structural quality of SCF samples was investigated by XRD method. For characterization of luminescent properties of Al2O3:Ce SCFs the cathodoluminescence spectra, scintillation light yield (LY) and decay kinetics under excitation by α-particles of Pu239 source were used. We have found that the scintillation LY of Al2O3:Ce SCF samples is relatively large and can reach up to 50% of the value realized in the reference YAG:Ce SCF. Using the synchrotron radiation excitation in the 3.7-25 eV range at 10 K we have also determined the basic parameters of the Ce3+ luminescence in Al2O3 host.

  12. Growth and characterization of Al2O3 films on fluorine functionalized epitaxial graphene

    NASA Astrophysics Data System (ADS)

    Robinson, Zachary R.; Jernigan, Glenn G.; Wheeler, Virginia D.; Hernández, Sandra C.; Eddy, Charles R.; Mowll, Tyler R.; Ong, Eng Wen; Ventrice, Carl A.; Geisler, Heike; Pletikosic, Ivo; Yang, Hongbo; Valla, Tonica

    2016-08-01

    Intelligent engineering of graphene-based electronic devices on SiC(0001) requires a better understanding of processes used to deposit gate-dielectric materials on graphene. Recently, Al2O3 dielectrics have been shown to form conformal, pinhole-free thin films by functionalizing the top surface of the graphene with fluorine prior to atomic layer deposition (ALD) of the Al2O3 using a trimethylaluminum (TMA) precursor. In this work, the functionalization and ALD-precursor adsorption processes have been studied with angle-resolved photoelectron spectroscopy, low energy electron diffraction, and X-ray photoelectron spectroscopy. It has been found that the functionalization process has a negligible effect on the electronic structure of the graphene, and that it results in a twofold increase in the adsorption of the ALD-precursor. In situ TMA-dosing and XPS studies were also performed on three different Si(100) substrates that were terminated with H, OH, or dangling Si-bonds. This dosing experiment revealed that OH is required for TMA adsorption. Based on those data along with supportive in situ measurements that showed F-functionalization increases the amount of oxygen (in the form of adsorbed H2O) on the surface of the graphene, a model for TMA-adsorption on graphene is proposed that is based on a reaction of a TMA molecule with OH.

  13. Image reconstruction algorithm for optically stimulated luminescence 2D dosimetry using laser-scanned Al2O3:C and Al2O3:C,Mg films

    NASA Astrophysics Data System (ADS)

    Ahmed, M. F.; Schnell, E.; Ahmad, S.; Yukihara, E. G.

    2016-10-01

    The objective of this work was to develop an image reconstruction algorithm for 2D dosimetry using Al2O3:C and Al2O3:C,Mg optically stimulated luminescence (OSL) films imaged using a laser scanning system. The algorithm takes into account parameters associated with detector properties and the readout system. Pieces of Al2O3:C films (~8 mm  ×  8 mm  ×  125 µm) were irradiated and used to simulate dose distributions with extreme dose gradients (zero and non-zero dose regions). The OSLD film pieces were scanned using a custom-built laser-scanning OSL reader and the data obtained were used to develop and demonstrate a dose reconstruction algorithm. The algorithm includes corrections for: (a) galvo hysteresis, (b) photomultiplier tube (PMT) linearity, (c) phosphorescence, (d) ‘pixel bleeding’ caused by the 35 ms luminescence lifetime of F-centers in Al2O3, (e) geometrical distortion inherent to Galvo scanning system, and (f) position dependence of the light collection efficiency. The algorithm was also applied to 6.0 cm  ×  6.0 cm  ×  125 μm or 10.0 cm  ×  10.0 cm  ×  125 µm Al2O3:C and Al2O3:C,Mg films exposed to megavoltage x-rays (6 MV) and 12C beams (430 MeV u-1). The results obtained using pieces of irradiated films show the ability of the image reconstruction algorithm to correct for pixel bleeding even in the presence of extremely sharp dose gradients. Corrections for geometric distortion and position dependence of light collection efficiency were shown to minimize characteristic limitations of this system design. We also exemplify the application of the algorithm to more clinically relevant 6 MV x-ray beam and a 12C pencil beam, demonstrating the potential for small field dosimetry. The image reconstruction algorithm described here provides the foundation for laser-scanned OSL applied to 2D dosimetry.

  14. Image reconstruction algorithm for optically stimulated luminescence 2D dosimetry using laser-scanned Al2O3:C and Al2O3:C,Mg films.

    PubMed

    Ahmed, M F; Schnell, E; Ahmad, S; Yukihara, E G

    2016-10-21

    The objective of this work was to develop an image reconstruction algorithm for 2D dosimetry using Al2O3:C and Al2O3:C,Mg optically stimulated luminescence (OSL) films imaged using a laser scanning system. The algorithm takes into account parameters associated with detector properties and the readout system. Pieces of Al2O3:C films (~8 mm  ×  8 mm  ×  125 µm) were irradiated and used to simulate dose distributions with extreme dose gradients (zero and non-zero dose regions). The OSLD film pieces were scanned using a custom-built laser-scanning OSL reader and the data obtained were used to develop and demonstrate a dose reconstruction algorithm. The algorithm includes corrections for: (a) galvo hysteresis, (b) photomultiplier tube (PMT) linearity, (c) phosphorescence, (d) 'pixel bleeding' caused by the 35 ms luminescence lifetime of F-centers in Al2O3, (e) geometrical distortion inherent to Galvo scanning system, and (f) position dependence of the light collection efficiency. The algorithm was also applied to 6.0 cm  ×  6.0 cm  ×  125 μm or 10.0 cm  ×  10.0 cm  ×  125 µm Al2O3:C and Al2O3:C,Mg films exposed to megavoltage x-rays (6 MV) and (12)C beams (430 MeV u(-1)). The results obtained using pieces of irradiated films show the ability of the image reconstruction algorithm to correct for pixel bleeding even in the presence of extremely sharp dose gradients. Corrections for geometric distortion and position dependence of light collection efficiency were shown to minimize characteristic limitations of this system design. We also exemplify the application of the algorithm to more clinically relevant 6 MV x-ray beam and a (12)C pencil beam, demonstrating the potential for small field dosimetry. The image reconstruction algorithm described here provides the foundation for laser-scanned OSL applied to 2D dosimetry.

  15. The chemisorption of H2O, HCOOH and CH3COOH on thin amorphous films of Al2O3

    NASA Technical Reports Server (NTRS)

    Lewis, B. F.; Weinberg, W. H.; Mosesman, M.

    1974-01-01

    Investigation of the irreversible chemisorption of water, formic acid and acetic acid on a thin amorphous aluminum oxide film, using inelastic tunneling spectroscopy. All of the tunnel junctions employed were Al-Al2O3-Pb junctions with the adsorbate on the Al2O3 surface between the Al2O3 and the Pb electrode. The results obtained include the finding that all Al2O3 surfaces prepared by oxidation of Al have free CH groups present on them.

  16. The impact of ultrathin Al2O3 films on the electrical response of p-Ge/Al2O3/HfO2/Au MOS structures

    NASA Astrophysics Data System (ADS)

    Botzakaki, M. A.; Skoulatakis, G.; Kennou, S.; Ladas, S.; Tsamis, C.; Georga, S. N.; Krontiras, C. A.

    2016-09-01

    It is well known that the most critical issue in Ge CMOS technology is the successful growth of high-k gate dielectrics on Ge substrates. The high interface quality of Ge/high-k dielectric is connected with advanced electrical responses of Ge based MOS devices. Following this trend, atomic layer deposition deposited ultrathin Al2O3 and HfO2 films were grown on p-Ge. Al2O3 acts as a passivation layer between p-Ge and high-k HfO2 films. An extensive set of p-Ge/Al2O3/HfO2 structures were fabricated with Al2O3 thickness ranging from 0.5 nm to 1.5 nm and HfO2 thickness varying from 2.0 nm to 3.0 nm. All structures were characterized by x-ray photoelectron spectroscopy (XPS) and AFM. XPS analysis revealed the stoichiometric growth of both films in the absence of Ge sub-oxides between p-Ge and Al2O3 films. AFM analysis revealed the growth of smooth and cohesive films, which exhibited minimal roughness (~0.2 nm) comparable to that of clean bare p-Ge surfaces. The electrical response of all structures was analyzed by C-V, G-V, C-f, G-f and J-V characteristics, from 80 K to 300 K. It is found that the incorporation of ultrathin Al2O3 passivation layers between p-Ge and HfO2 films leads to superior electrical responses of the structures. All structures exhibit well defined C-V curves with parasitic effects, gradually diminishing and becoming absent below 170 K. D it values were calculated at each temperature, using both Hill-Coleman and Conductance methods. Structures of p-Ge/0.5 nm Al2O3/2.0 nm HfO2/Au, with an equivalent oxide thickness (EOT) equal to 1.3 nm, exhibit D it values as low as ~7.4  ×  1010 eV-1 cm-2. To our knowledge, these values are among the lowest reported. J-V measurements reveal leakage currents in the order of 10-1 A cm-2, which are comparable to previously published results for structures with the same EOT. A complete mapping of the energy distribution of D its into the energy bandgap of p-Ge, from the valence band

  17. Electrical characteristics of SrTiO3/Al2O3 laminated film capacitors

    NASA Astrophysics Data System (ADS)

    Peng, Yong; Yao, Manwen; Chen, Jianwen; Xu, Kaien; Yao, Xi

    2016-07-01

    The electrical characteristics of SrTiO3/Al2O3 (160 nm up/90 nm down) laminated film capacitors using the sol-gel process have been investigated. SrTiO3 is a promising and extensively studied high-K dielectric material, but its leakage current property is poor. SrTiO3/Al2O3 laminated films can effectively suppress the demerits of pure SrTiO3 films under low electric field, but the leakage current value reaches to 0.1 A/cm2 at higher electric field (>160 MV/m). In this study, a new approach was applied to reduce the leakage current and improve the dielectric strength of SrTiO3/Al2O3 laminated films. Compared to laminated films with Au top electrodes, dielectric strength of laminated films with Al top electrodes improves from 205 MV/m to 322 MV/m, simultaneously the leakage current maintains the same order of magnitude (10-4 A/cm2) until the breakdown occurs. The above electrical characteristics are attributed to the anodic oxidation reaction in origin, which can repair the defects of laminated films at higher electric field. The anodic oxidation reactions have been confirmed by the corresponding XPS measurement and the cross sectional HRTEM analysis. This work provides a new approach to fabricate dielectrics with high dielectric strength and low leakage current.

  18. Growth of Polarity-Controlled ZnO Films on (0001) Al2O3

    NASA Astrophysics Data System (ADS)

    Park, J. S.; Chang, J. H.; Minegishi, T.; Lee, H. J.; Park, S. H.; Im, I. H.; Hanada, T.; Hong, S. K.; Cho, M. W.; Yao, T.

    2008-05-01

    The polarity control of ZnO films grown on (0001) Al2O3 substrates by plasma-assisted molecular-beam epitaxy (P-MBE) was achieved by using a novel CrN buffer layer. Zn-polar ZnO films were obtained by using a Zn-terminated CrN buffer layer, while O-polar ZnO films were achieved by using a Cr2O3 layer formed by O-plasma exposure of a CrN layer. The mechanism of polarity control was proposed. Optical and structural quality of ZnO films was characterized by high-resolution X-ray diffraction and photoluminescence (PL) spectroscopy. Low-temperature PL spectra of Zn-polar and O-polar samples show dominant bound exciton (I8) and strong free exciton emissions. Finally, one-dimensional periodic structures consisting of Zn-polar and O-polar ZnO films were simultaneously grown on the same substrate. The periodic inversion of polarity was confirmed in terms of growth rate, surface morphology, and piezo response microscopy (PRM) measurement.

  19. Influence of argon plasma on the deposition of Al2O3 film onto the PET surfaces by atomic layer deposition.

    PubMed

    Edy, Riyanto; Huang, Xiaojiang; Guo, Ying; Zhang, Jing; Shi, Jianjun

    2013-02-15

    In this paper, polyethyleneterephthalate (PET) films with and without plasma pretreatment were modified by atomic layer deposition (ALD) and plasma-assisted atomic layer deposition (PA-ALD). It demonstrates that the Al2O3 films are successfully deposited onto the surface of PET films. The cracks formed on the deposited Al2O3 films in the ALD, plasma pretreated ALD, and PA-ALD were attributed to the energetic ion bombardment in plasmas. The surface wettability in terms of water contact angle shows that the deposited Al2O3 layer can enhance the wetting property of modified PET surface. Further characterizations of the Al2O3 films suggest that the elevated density of hydroxyl -OH group improve the initial growth of ALD deposition. Chemical composition of the Al2O3-coated PET film was characterized by X-ray photoelectron spectroscopy, which shows that the content of C 1s reduces with the growing of O 1s in the Al2O3-coated PET films, and the introduction of plasma in the ALD process helps the normal growth of Al2O3 on PET in PA-ALD.

  20. Influence of Content of Al2O3 on Structure and Properties of Nanocomposite Nb-B-Al-O films.

    PubMed

    Liu, Na; Dong, Lei; Dong, Lei; Yu, Jiangang; Pan, Yupeng; Wan, Rongxin; Gu, Hanqing; Li, Dejun

    2015-12-01

    Nb-B-Al-O nanocomposite films with different power of Al2O3 were successfully deposited on the Si substrate via multi-target magnetron co-sputtering method. The influences of Al2O3's content on structure and properties of obtained nanocomposite films through controlling Al2O3's power were investigated. Increasing the power of Al2O3 can influence the bombarding energy and cause the momentum transfer of NbB2. This can lead to the decreasing content of Al2O3. Furthermore, the whole films showed monocrystalline NbB2's (100) phase, and Al2O3 shaded from amorphous to weak cubic-crystalline when decreasing content of Al2O3. This structure and content changes were proof by X-ray diffraction (XRD) and high-resolution transmission electron microscopy (TEM) and X-ray photoelectron spectroscopy (XPS). When NbB2 grains were far from each other in lower power of Al2O3, the whole films showed a typical nanocomposite microstructure with crystalline NbB2 grains embedded in a matrix of an amorphous Al2O3 phase. Continuing increasing the power of Al2O3, the less content of Al2O3 tended to cause crystalline of cubic-Al2O3 between the close distances of different crystalline NbB2 grains. The appearance of cubic-crystallization Al2O3 can help to raise the nanocomposite films' mechanical properties to some extent. The maximum hardness and elastic modulus were up to 21.60 and 332.78 GPa, which were higher than the NbB2 and amorphous Al2O3 monolithic films. Furthermore, this structure change made the chemistry bond of O atom change from the existence of O-Nb, O-B, and O-Al bonds to single O-Al bond and increased the specific value of Al and O. It also influenced the hardness in higher temperature, which made the hardness variation of different Al2O3 content reduced. These results revealed that it can enhance the films' oxidation resistance properties and keep the mechanical properties at high temperature. The study highlighted the importance of controlling the Al2O3's content to prepare

  1. Reduction of Ordering Temperature of FePt Al2O3 Thin Films by N2 Addition During Sputtering

    NASA Astrophysics Data System (ADS)

    Cao, Jiang-Wei; Katayama, N.; Yang, Zheng; Wei, Fu-Lin; Matsumoto, M.; Morisako, A.; Liu, Xiao-Xi; Takei, S.

    2005-11-01

    We investigate the effect of N2 addition during sputtering on the microstructure and magnetic properties of FePt-Al2O3 thin films. The texture of FePt phase in FePt-Al2O3 thin films changes from (111) to a more random orientation by N2 addition during sputtering. The ordering temperature of FePt phase reduces about 100°C with appropriate N2 partial pressure. A larger coercivity of 6.0×105 A/m is obtained with N2 partial pressure about 15%. Structural analysis reveals that a small quantity of Fe3N phase forms during sputtering and the release of N atoms during the post annealing induces a large number of vacancies in the films, which benefits to the transformation of FePt phase from fcc to fct.

  2. Effect of adsorbed films on friction of Al2O3-metal systems

    NASA Technical Reports Server (NTRS)

    Pepper, S. V.

    1976-01-01

    The kinetic friction of polycrystalline Al2O3 sliding on Cu, Ni, and Fe in ultrahigh vacuum was studied as a function of the surface chemistry of the metal. Clean metal surfaces were exposed to O2, Cl2, C2H4, and C2H3Cl, and the change in friction due to the adsorbed species was observed. Auger electron spectroscopy assessed the elemental composition of the metal surface. It was found that the systems exposed to Cl2 exhibited low friction, interpreted as the van der Waals force between the Al2O3 and metal chloride. The generation of metal oxide by oxygen exposures resulted in an increase in friction, interpreted as due to strong interfacial bonds established by reaction of metal oxide with Al2O3 to form the complex oxide (spinel). The only effect of C2H4 was to increase the friction of the Fe system, but C2H3Cl exposures decreases friction in both Ni and Fe systems, indicating the dominance of the chlorine over the ethylene complex on the surface

  3. Characteristics of nanocomposite ZrO2/Al2O3 films deposited by plasma-enhanced atomic layer deposition.

    PubMed

    Yun, Sun Jin; Lim, Jung Wook; Kim, Hyun-Tak

    2007-11-01

    Nanocomposite ZrO2/Al2O3 (ZAO) films were deposited on Si by plasma-enhanced atomic layer deposition and the film characteristics including interfacial oxide formation, dielectric constant (k), and electrical breakdown strength were investigated without post-annealing process. In both the mixed and nano-laminated ZAO films, the thickness of the interfacial oxide layer (T(IL)) was considerably reduced compared to ZrO2 and Al2O3 films. The T(IL) was 0.8 nm in nano-composite films prepared at a mixing ratio (ZrO2:Al2O3) of 1:1. The breakdown strength and the leakage current level were greatly improved by adding Al2O3 as little as 7.9% compared to that of ZrO2 and were enhanced more with increasing content of Al2O3. The k of ZrO2 and mixed ZAO (Al2O3 7.9%) films were 20.0 and 16.5, respectively. These results indicate that the addition of Al2O3 to ZrO2 greatly improves the electrical properties with less cost of k compared to the addition of SiO2.

  4. Superconductivity of Al/Al2O3 interface formed by shock-wave pressure

    NASA Astrophysics Data System (ADS)

    Palnichenko, A. V.; Shakhrai, D. V.; Avdonin, V. V.; Vyaselev, O. M.; Khasanov, S. S.

    2015-05-01

    A mixture of Al and α -Al2O3 has been subjected to a shock-wave pressure of ≃ 170 kbar, followed by vacuum-encapsulating and quenching of the product to liquid nitrogen. The ac magnetic susceptibility measurements of the samples have revealed metastable superconductivity with Tc ≈ 37 K, characterized by glassy dynamics of the shielding currents below Tc . Comparison of the ac susceptibility and the dc magnetization measurements infers that the superconductivity arises within the interfacial granular layer formed between metallic Al and its oxide due to the shock-wave treatment.

  5. Superconductivity of Al/Al2O3 interface formed under shock-wave conditions

    NASA Astrophysics Data System (ADS)

    Shakhray, D. V.; Avdonin, V. V.; Palnichenko, A. V.; Vyaselev, O. M.

    2015-11-01

    A mixture of powdered Al and Al2O3 has been subjected to a shock-wave pressure of ≈ 170 kbar, followed by vacuum-encapsulating and quenching of the product to liquid nitrogen. The ac magnetic susceptibility measurements of the samples have revealed metastable superconductivity with Tc ≈ 37 K, characterized by glassy dynamics of the shielding currents below Tc. Comparison of the ac susceptibility and the dc magnetization measurements infers that the superconductivity arises within the interfacial granular layer formed between metallic Al and its oxide due to the shock-wave treatment.

  6. Anisotropic temperature-dependent thermal conductivity by an Al2O3 interlayer in Al2O3/ZnO superlattice films

    NASA Astrophysics Data System (ADS)

    Lee, Won-Yong; Lee, Jung-Hoon; Ahn, Jae-Young; Park, Tae-Hyun; Park, No-Won; Kim, Gil-Sung; Park, Jin-Seong; Lee, Sang-Kwon

    2017-03-01

    The thermal conductivity of superlattice films is generally anisotropic and should be studied separately in the in-plane and cross-plane directions of the films. However, previous works have mostly focused on the cross-plane thermal conductivity because the electrons and phonons in the cross-plane direction of superlattice films may result in much stronger interface scattering than that in the in-plane direction. Nevertheless, it is highly desirable to perform systematic studies on the effect of interface formation in semiconducting superlattice films on both in-plane and cross-plane thermal conductivities. In this study, we determine both the in-plane and cross-plane thermal conductivities of Al2O3 (AO)/ZnO superlattice films grown by atomic layer deposition (ALD) on SiO2/Si substrates in the temperature range of 50–300 K by the four-point-probe 3-ω method. Our experimental results indicate that the formation of an atomic AO layer (0.82 nm) significantly contributes to the decrease of the cross-plane thermal conductivity of the AO/ZnO superlattice films compared with that of AO/ZnO thin films. The cross-plane thermal conductivity (0.26–0.63 W m‑1 K‑1 of the AO/ZnO superlattice films (with an AO layer of ∼0.82 nm thickness) is approximately ∼150%–370% less than the in-plane thermal conductivity (0.96–1.19 W m‑1 K‑1) of the corresponding film, implying significant anisotropy. This indicates that the suppression of the cross-plane thermal conductivity is mainly attributed to the superlattice, rather than the nanograin columnar structure in the films. In addition, we theoretically analyzed strong anisotropic behavior of the in-plane and cross-plane thermal conductivities of the AO/ZnO superlattice films in terms of temperature dependence.

  7. Anisotropic temperature-dependent thermal conductivity by an Al2O3 interlayer in Al2O3/ZnO superlattice films.

    PubMed

    Lee, Won-Yong; Lee, Jung-Hoon; Ahn, Jae-Young; Park, Tae-Hyun; Park, No-Won; Kim, Gil-Sung; Park, Jin-Seong; Lee, Sang-Kwon

    2017-03-10

    The thermal conductivity of superlattice films is generally anisotropic and should be studied separately in the in-plane and cross-plane directions of the films. However, previous works have mostly focused on the cross-plane thermal conductivity because the electrons and phonons in the cross-plane direction of superlattice films may result in much stronger interface scattering than that in the in-plane direction. Nevertheless, it is highly desirable to perform systematic studies on the effect of interface formation in semiconducting superlattice films on both in-plane and cross-plane thermal conductivities. In this study, we determine both the in-plane and cross-plane thermal conductivities of Al2O3 (AO)/ZnO superlattice films grown by atomic layer deposition (ALD) on SiO2/Si substrates in the temperature range of 50-300 K by the four-point-probe 3-ω method. Our experimental results indicate that the formation of an atomic AO layer (0.82 nm) significantly contributes to the decrease of the cross-plane thermal conductivity of the AO/ZnO superlattice films compared with that of AO/ZnO thin films. The cross-plane thermal conductivity (0.26-0.63 W m(-1) K(-1) of the AO/ZnO superlattice films (with an AO layer of ∼0.82 nm thickness) is approximately ∼150%-370% less than the in-plane thermal conductivity (0.96-1.19 W m(-1) K(-1)) of the corresponding film, implying significant anisotropy. This indicates that the suppression of the cross-plane thermal conductivity is mainly attributed to the superlattice, rather than the nanograin columnar structure in the films. In addition, we theoretically analyzed strong anisotropic behavior of the in-plane and cross-plane thermal conductivities of the AO/ZnO superlattice films in terms of temperature dependence.

  8. Interface Properties of Atomic-Layer-Deposited Al2O3 Thin Films on Ultraviolet/Ozone-Treated Multilayer MoS2 Crystals.

    PubMed

    Park, Seonyoung; Kim, Seong Yeoul; Choi, Yura; Kim, Myungjun; Shin, Hyunjung; Kim, Jiyoung; Choi, Woong

    2016-05-11

    We report the interface properties of atomic-layer-deposited Al2O3 thin films on ultraviolet/ozone (UV/O3)-treated multilayer MoS2 crystals. The formation of S-O bonds on MoS2 after low-power UV/O3 treatment increased the surface energy, allowing the subsequent deposition of uniform Al2O3 thin films. The capacitance-voltage measurement of Au-Al2O3-MoS2 metal oxide semiconductor capacitors indicated n-type MoS2 with an electron density of ∼10(17) cm(-3) and a minimum interface trap density of ∼10(11) cm(-2) eV(-1). These results demonstrate the possibility of forming a high-quality Al2O3-MoS2 interface by proper UV/O3 treatment, providing important implications for their integration into field-effect transistors.

  9. Critical tensile and compressive strains for cracking of Al2O3 films grown by atomic layer deposition

    NASA Astrophysics Data System (ADS)

    Jen, Shih-Hui; Bertrand, Jacob A.; George, Steven M.

    2011-04-01

    Al2O3 atomic layer deposition (ALD) is a model ALD system and Al2O3 ALD films are excellent gas diffusion barrier on polymers. However, little is known about the response of Al2O3 ALD films to strain and the potential film cracking that would restrict the utility of gas diffusion barrier films. To understand the mechanical limitations of Al2O3 ALD films, the critical strains at which the Al2O3 ALD films will crack were determined for both tensile and compressive strains. The tensile strain measurements were obtained using a fluorescent tagging technique to image the cracks. The results showed that the critical tensile strain is higher for thinner thicknesses of the Al2O3 ALD film on heat-stabilized polyethylene naphthalate (HSPEN) substrates. A low critical tensile strain of 0.52% was measured for a film thickness of 80 nm. The critical tensile strain increased to 2.4% at a film thickness of 5 nm. In accordance with fracture mechanics modeling, the critical tensile strains and the saturation crack densities scaled as (1/h)1/2 where h is the Al2O3 ALD film thickness. The fracture toughness for cracking, KIC, of the Al2O3 ALD film was also determined to be KIC = 2.30 MPa m1/2. Thinner Al2O3 ALD film thicknesses also had higher critical strains for cracking from compressive strains. Field-emission scanning electron microscopy (FE-SEM) images revealed that Al2O3 ALD films with thicknesses of 30-50 nm on Teflon fluorinated ethylene propylene (FEP) substrates cracked at a critical compressive strain of ˜1.0%. The critical compressive strain increased to ˜2.0% at a film thickness of ˜20 nm. A comparison of the critical tensile strains on HSPEN substrates and critical compressive strains on Teflon FEP substrates revealed some similarities. The critical strain was ˜1.0% for film thicknesses of 30-50 nm for both tensile and compressive strains. The critical compressive strain then increased more rapidly than the critical tensile strain for thinner films with thicknesses

  10. Some TEM observations of Al2O3 scales formed on NiCrAl alloys

    NASA Technical Reports Server (NTRS)

    Smialek, J.; Gibala, R.

    1979-01-01

    The microstructural development of Al2O3 scales on NiCrAl alloys has been examined by transmission electron microscopy. Voids were observed within grains in scales formed on a pure NiCrAl alloy. Both voids and oxide grains grew measurably with oxidation time at 1100 C. The size and amount of porosity decreased towards the oxide-metal growth interface. The voids resulted from an excess number of oxygen vacancies near the oxidemetal interface. Short-circuit diffusion paths were discussed in reference to current growth stress models for oxide scales. Transient oxidation of pure, Y-doped, and Zr-doped NiCrAl was also examined. Oriented alpha-(Al, Cr)2O3 and Ni(Al, Cr)2O4 scales often coexisted in layered structures on all three alloys. Close-packed oxygen planes and directions in the corundum and spinel layers were parallel. The close relationship between oxide layers provided a gradual transition from initial transient scales to steady state Al2O3 growth.

  11. Some TEM observations of Al2O3 scales formed on NiCrAl alloys

    NASA Technical Reports Server (NTRS)

    Smialek, J.; Gibala, R.

    1979-01-01

    The microstructural development of Al2O3 scales on NiCrAl alloys has been examined by transmission electron microscopy. Voids have been observed within grains in scales formed on a pure NiCrAl alloy. Both voids and oxide grains grew measurably with oxidation time at 1100 C. The size and amount of porosity decreased towards the oxide-metal growth interface. It was postulated that the voids resulted from an excess number of oxygen vacancies near the oxide-metal interface. Short-circuit diffusion paths were discussed in reference to current growth stress models for oxide scales. Transient oxidations of pure, Y-doped, and Zr-doped NiCrAl was also examined. Oriented alpha-(Al,Cr)2O3 and Ni(Al,Cr)2O4 scales often coexisted in layered structures on all three alloys. Close-packed oxygen planes and directions in the corundum and spinel layers were parallel. The close relationships between oxide layers provided a gradual transition from initial transient scales to steady state Al2O3 growth.

  12. Passivation Effect of Atomic Layer Deposition of Al2O3 Film on HgCdTe Infrared Detectors

    NASA Astrophysics Data System (ADS)

    Zhang, Peng; Ye, Zhen-Hua; Sun, Chang-Hong; Chen, Yi-Yu; Zhang, Tian-Ning; Chen, Xin; Lin, Chun; Ding, Ring-Jun; He, Li

    2016-09-01

    The passivation effect of atomic layer deposition of (ALD) Al2O3 film on a HgCdTe infrared detector was investigated in this work. The passivation effect of Al2O3 film was evaluated by measuring the minority carrier lifetime, capacitance versus voltage ( C- V) characteristics of metal-insulator-semiconductor devices, and resistance versus voltage ( R- V) characteristics of variable-area photodiodes. The minority carrier lifetime, C- V characteristics, and R- V characteristics of HgCdTe devices passivated by ALD Al2O3 film was comparable to those of HgCdTe devices passivated by e-beam evaporation of ZnS/CdTe film. However, the baking stability of devices passivated by Al2O3 film is inferior to that of devices passivated by ZnS/CdTe film. In future work, by optimizing the ALD Al2O3 film growing process and annealing conditions, it may be feasible to achieve both excellent electrical properties and good baking stability.

  13. W:Al2O3 nanocomposite thin films with tunable optical properties prepared by atomic layer deposition

    DOE PAGES

    Babar, Shaista; Mane, Anil U.; Yanguas-Gil, Angel; ...

    2016-06-17

    Here, a systematic alteration in the optical properties of W:Al2O3 nanocomposite films is demonstrated by precisely varying the W cycle percentage (W%) from 0 to 100% in Al2O3 during atomic layer deposition. The direct and indirect band energies of the nanocomposite materials decrease from 5.2 to 4.2 eV and from 3.3 to 1.8 eV, respectively, by increasing the W% from 10 to 40. X-ray absorption spectroscopy reveals that, for W% < 50, W is present in both metallic and suboxide states, whereas, for W% ≥ 50, only metallic W is seen. This transition from dielectric to metallic character at W%more » ~ 50 is accompanied by an increase in the electrical and thermal conductivity and the disappearance of a clear band gap in the absorption spectrum. The density of the films increases monotonically from 3.1 g/cm3 for pure Al2O3 to 17.1 g/cm3 for pure W, whereas the surface roughness is greatest for the W% = 50 films. The W:Al2O3 nanocomposite films are thermally stable and show little change in optical properties upon annealing in air at 500 °C. These W:Al2O3 nanocomposite films show promise as selective solar absorption coatings for concentrated solar power applications.« less

  14. Structural and mechanical characterization of Al/Al2O3 nanotube thin film on TiV alloy

    NASA Astrophysics Data System (ADS)

    Sarraf, M.; Zalnezhad, E.; Bushroa, A. R.; Hamouda, A. M. S.; Baradaran, S.; Nasiri-Tabrizi, B.; Rafieerad, A. R.

    2014-12-01

    In this study, the fabrication and characterization of Al/Al2O3 nanotubular arrays on Ti-6Al-4V substrate were carried out. To this end, aluminum thin films were deposited as a first coating layer by direct current (DC) magnetron sputtering with the coating conditions of 300 W, 150 °C and 75 V substrate bias voltage. Al2O3 nanotube array as a second layer was grown on the Al layer by electrochemical anodisation at the constant potential of 20 V within different time periods in an electrolyte solution. For annealing the coated substrates, plasma treatment (PT) technique was utilized under various conditions to get the best adhesion strength of coating to the substrate. To characterize the coating layers, micro scratch test, Vickers hardness and field emission of scanning electron microscopy (FESEM) were used. Results show that after the deposition of pure aluminum on the substrate the scratch length, load and failure point were 794.37 μm, 1100 mN and 411.43 μm, respectively. After PT, the best adhesion strength (2038 mN) was obtained at RF power of 60 W. With the increase of the RF power up to 80 W, a reduction in adhesion strength was observed (1525.22 mN). From the microstructural point of view, a homogenous porous structure with an average pore size of 40-60 nm was formed after the anodisation for 10-45 min. During PT, the porous structure was converted to dense alumina layer when the RF power rose from 40 to 80 W. This led to an increase in hardness value from 2.7 to 3.4 GPa. Based on the obtained data, the RF power of 60 W was the optimum condition for plasma treatment of Al/Al2O3 nanotubular arrays on Ti-6Al-4V substrate.

  15. Enhanced TC in granular and thin film Al-Al2O3 nanostructures

    NASA Astrophysics Data System (ADS)

    Higgins, J. S.; Greene, R. L.

    It is known since the 1970s that the superconducting transition temperature of granular aluminum films can be as high as two to three times the transition temperature of bulk aluminum, depending on the grain size and how strongly the nanometer size grains are connected1,2. As the strength of the grain connectivity becomes increasingly weak, the enhanced TC is suppressed. The mechanism behind this enhancement is still under debate. Recently, work on larger aluminum nanoparticles (18nm) embedded in an insulating Al2O3 matrix showed an onset of the superconducting transition as high as three times that of bulk aluminum3. In this situation, the Al grains are electrically disconnected and in a regime far removed from that of the granular films. Here we compare the two situations through electronic and thermal measurements in order to help elucidate the mechanism behind the enhancements. 1S. Pracht, et al., arXiv:1508.04270v1 [cond-mat.supr-con] (2015). 2G. Deutscher, New Superconductors From Granular to High TC, New Jersey: World Scientific, 2006, p. 72-74. 3V. N. Smolyaninova, et al., Sci. Rep. 5, 15777 (2015). Funding by NSF DMR # 1410665.

  16. Atomic layer deposition of TiO2 / Al2O3 films for optical applications

    NASA Astrophysics Data System (ADS)

    Triani, Gerry; Evans, Peter J.; Mitchell, David R. G.; Attard, Darren J.; Finnie, Kim S.; James, Michael; Hanley, Tracey; Latella, Bruno; Prince, Kathryn E.; Bartlett, John

    2005-09-01

    Atomic layer deposition (ALD) is an important technology for depositing functional coatings on accessible, reactive surfaces with precise control of thickness and nanostructure. Unlike conventional chemical vapour deposition, where growth rate is dependent on reactant flux, ALD employs sequential surface chemical reactions to saturate a surface with a (sub-) monolayer of reactive compounds such as metal alkoxides or covalent halides, followed by reaction with a second compound such as water to deposit coatings layer-by-layer. A judicious choice of reactants and processing conditions ensures that the reactions are self-limiting, resulting in controlled film growth with excellent conformality to the substrate. This paper investigates the deposition and characterisation of multi-layer TiO2 /Al2O3 films on a range of substrates, including silicon <100>, soda glass and polycarbonate, using titanium tetrachloride/water and trimethylaluminium/water as precursor couples. Structure-property correlations were established using a suite of analytical tools, including transmission electron microscopy (TEM), secondary ion mass spectrometry (SIMS), X-ray reflectometry (XRR) and spectroscopic ellipsometry (SE). The evolution of nanostructure and composition of multi-layer high/low refractive index stacks are discussed as a function of deposition parameters.

  17. Boat-like Au nanoparticles embedded mesoporous γ-Al2O3 films: an efficient SERS substrate

    NASA Astrophysics Data System (ADS)

    Dandapat, Anirban; Pramanik, Sourav; Bysakh, Sandip; De, Goutam

    2013-07-01

    Boat-like Au nanoparticles (NPs) have been synthesized within the mesoporous γ-Al2O3 films. First, mesoporous γ-Al2O3 film was prepared using aluminum alkoxide derived boehmite sol in the presence of CTAB as structure directing agent. The film was heat-treated at 500 °C to obtain γ-Al2O3 film with an average pore diameter of 4.3 nm. HAuCl4 solution was then soaked into the porous film followed by heat-treatment at 500 °C to generate Au NPs. The blue-colored films so obtained were characterized by UV-visible spectroscopy, grazing incidence X-ray diffraction, FESEM, and TEM studies. FESEM and TEM studies reveal the formation boat-like Au NPs in γ-Al2O3 film matrix. Cross-sectional FESEM shows the thickness of the films to be 2.2 μm. These nanocomposite films were used as a unique surface-enhanced Raman scattering (SERS) substrate for easy detection of low concentration (10-8 M) analyte (methylene blue) molecule. Boat-like shape of Au NPs have several edges and junctions that contain high density of hotspots to exhibit very high SERS signals. Due to such shape of Au NPs, the films also show strong absorption in the visible-NIR region that would extend the use of the films in heat-absorbing and biomedical applications.

  18. Dynamic Friction Performance of a Pneumatic Cylinder with Al2O3 Film on Cylinder Surface.

    PubMed

    Chang, Ho; Lan, Chou-Wei; Wang, Hao-Xian

    2015-11-01

    A friction force system is proposed for accurately measuring friction force and motion properties produced by reciprocating motion of piston in a pneumatic cylinder. In this study, the proposed system is used to measure the effects of lubricating greases of different viscosities on the friction properties of pneumatic cylinder, and improvement of stick-slip motion for the cylinder bore by anodizing processes. A servo motor-driven ball screw is used to drive the pneumatic cylinder to be tested and to measure the change in friction force of the pneumatic cylinder. Experimental results show, that under similar test conditions, the lubricating grease with viscosity VG100 is best suited for measuring reciprocating motion of the piston of pneumatic cylinder. The wear experiment showed that, in the Al2O3 film obtained at a preset voltage 40 V in the anodic process, the friction coefficient and hardness decreased by 55% and increased by 274% respectively, thus achieving a good tribology and wear resistance. Additionally, the amplitude variation in the friction force of the pneumatic cylinder wall that received the anodizing treatment was substantially reduced. Additionally, the stick-slip motion of the pneumatic cylinder during low-speed motion was substantially improved.

  19. Effect of Al2O3 encapsulation on multilayer MoSe2 thin-film transistors

    NASA Astrophysics Data System (ADS)

    Lee, Hyun Ah; Yeoul Kim, Seong; Kim, Jiyoung; Choi, Woong

    2017-03-01

    We report the effect of Al2O3 encapsulation on the device performance of multilayer MoSe2 thin-film transistors based on statistical investigation of 29 devices with a SiO2 bottom-gate dielectric. On average, Al2O3 encapsulation by atomic layer deposition increased the field-effect mobility from 10.1 cm2 V‑1 s‑1 to 14.8 cm2 V‑1 s‑1, decreased the on/off-current ratio from 8.5  ×  105 to 2.3  ×  105 and negatively shifted the threshold voltage from  ‑1.1 V to  ‑8.1 V. Calculation based on the Y-function method indicated that the enhancement of intrinsic carrier mobility occurred independently of the reduction of contact resistance after Al2O3 encapsulation. Furthermore, contrary to previous reports in the literature, we observe a negligible effect of thermal annealing on contact resistance and carrier mobility during the atomic layer deposition of Al2O3. These results demonstrate that Al2O3 encapsulation is a useful method for improving the carrier mobility of multilayer MoSe2 transistors, providing important implications on the application of MoSe2 and other 2D materials into high-performance transistors.

  20. Synthesis and Characterization of Biodegradable Ultrasonicated Films made from Chitosan/al2o3 Polymer Nanocomposites

    NASA Astrophysics Data System (ADS)

    Prakash, B.; Jothirajan, M. A.; Umapathy, S.; Amala, Viji

    Chitosan is a biopolymer which is biodegradable, biocompatible, non toxic and cationic in nature. Due to these interesting properties, it finds advanced applications in sensors, drug delivery vehicle and gene therapy etc., In this present work, the biocompatible Al2O3 Nano particles were embedded into Chitosan Polymer matrix by ultrasonication route. XRD and FTIR studies confirm the presence of Al2O3 nanoparticle in the Chitosan polymer matrix. The morphological, optical, electrical properties of the polymer nano composite films are carried out by employing scanning electron microscopy (SEM), UV- Vis, LCR and Impedance studies.

  1. Al2O3 half-wave films for long-life CW lasers

    NASA Technical Reports Server (NTRS)

    Ladany, I.; Ettenberg, M.; Lockwood, H. F.; Kressel, H.

    1977-01-01

    Long-term operating-life data are reported for (AlGa)As CW laser diodes. The use of half-wave Al2O3 facet coatings is shown to eliminate facet erosion, allowing stable diode operation at constant current for periods in excess of 10,000 h.

  2. Temperature-induced changes in optical properties of thin film TiO2-Al2O3 bi-layer structures grown by atomic layer deposition

    NASA Astrophysics Data System (ADS)

    Ali, Rizwan; Saleem, Muhammad Rizwan; Honkanen, Seppo

    2016-02-01

    We investigate the optical properties and corresponding temperature-induced changes in highly uniform thin amorphous films and their bi-layer stacks grown by Atomic Layer Deposition (ALD). The environmentally driven conditions such as temperature, humidity and pressure have a significant influence on optical properties of homogeneous and heterogeneous bi-layer stacked structures of TiO2-Al2O3 and subsequently affect the specific sensitive nature of optical signals from nano-optical devices. Owing to the super hydrophilic behavior and inhibited surface defects in the form of hydrogenated species, the thermo-optic coefficient (TOC) of ~ 100 nm thick ALD-TiO2 films vary significantly with temperature, which can be used for sensing applications. On the other hand, the TOC of ~ 100 nm thick ALD-Al2O3 amorphous films show a differing behavior with temperature. In this work, we report on reduction of surface defects in ALD-TiO2 films by depositing a number of ultra-thin ALD-Al2O3 films to act as impermeable barrier layers. The designed and fabricated heterostructures of ALD-TiO2/Al2O3 films with varying ALD-Al2O3 thicknesses are exploited to stabilize the central resonance peak of Resonant Waveguide Gratings (RWGs) in thermal environments. The temperature-dependent optical constants of ALD-TiO2/Al2O3 bi-layer films are measured by a variable angle spectroscopic ellipsometer (VASE), covering a wide spectral range 380 <= λ <= 1800 nm at a temperature range from 25 to 105 °C. The Cauchy model is used to design and retrieve refractive indices at these temperatures, measured with three angles of incidence (59°, 67°, and 75°). The optical constants of 100 nm thick ALD-TiO2 and various combinational thicknesses of ALD-Al2O3 films are used to predict TOCs using a polynomial fitting algorithm.

  3. Characterization of Al2O3 optically stimulated luminescence films for 2D dosimetry using a 6 MV photon beam

    NASA Astrophysics Data System (ADS)

    Ahmed, M. F.; Shrestha, N.; Schnell, E.; Ahmad, S.; Akselrod, M. S.; Yukihara, E. G.

    2016-11-01

    This work evaluates the dosimetric properties of newly developed optically stimulated luminescence (OSL) films, fabricated with either Al2O3:C or Al2O3:C,Mg, using a prototype laser scanning reader, a developed image reconstruction algorithm, and a 6 MV therapeutic photon beam. Packages containing OSL films (Al2O3:C and Al2O3:C,Mg) and a radiochromic film (Gafchromic EBT3) were irradiated using a 6 MV photon beam using different doses, field sizes, with and without wedge filter. Dependence on film orientation of the OSL system was also tested. Diode-array (MapCHECK) and ionization chamber measurements were performed for comparison. The OSLD film doses agreed with the MapCHECK and ionization chamber data within the experimental uncertainties (<2% at 1.5 Gy). The system background and minimum detectable dose (MDD) were  <0.5 mGy, and the dose response was approximately linear from the MDD up to a few grays (the linearity correction was  <10% up to ~2-4 Gy), with no saturation up to 30 Gy. The dose profiles agreed with those obtained using EBT3 films (analyzed using the triple channel method) in the high dose regions of the images. In the low dose regions, the dose profiles from the OSLD films were more reproducible than those from the EBT3 films. We also demonstrated that the OSL film data are independent on scan orientation and field size over the investigated range. The results demonstrate the potential of OSLD films for 2D dosimetry, particularly for the characterization of small fields, due to their wide dynamic range, linear response, resolution and dosimetric properties. The negligible background and potential simple calibration make these OSLD films suitable for remote audits. The characterization presented here may motivate further commercial development of a 2D dosimetry system based on the OSL from Al2O3:C or Al2O3:C,Mg.

  4. Enhanced carrier mobility of multilayer MoS2 thin-film transistors by Al2O3 encapsulation

    NASA Astrophysics Data System (ADS)

    Kim, Seong Yeoul; Park, Seonyoung; Choi, Woong

    2016-10-01

    We report the effect of Al2O3 encapsulation on the carrier mobility and contact resistance of multilayer MoS2 thin-film transistors by statistically investigating 70 devices with SiO2 bottom-gate dielectric. After Al2O3 encapsulation by atomic layer deposition, calculation based on Y-function method indicates that the enhancement of carrier mobility from 24.3 cm2 V-1 s-1 to 41.2 cm2 V-1 s-1 occurs independently from the reduction of contact resistance from 276 kΩ.μm to 118 kΩ.μm. Furthermore, contrary to the previous literature, we observe a negligible effect of thermal annealing on contact resistance and carrier mobility during the atomic layer deposition of Al2O3. These results demonstrate that Al2O3 encapsulation is a useful method of improving the carrier mobility of multilayer MoS2 transistors, providing important implications on the application of MoS2 and other two-dimensional materials into high-performance transistors.

  5. Twin symmetry texture of energetically condensed niobium thin films on sapphire substrate (a-plane Al2O3)

    NASA Astrophysics Data System (ADS)

    Zhao, X.; Phillips, L.; Reece, C. E.; Seo, Kang; Krishnan, M.; Valderrama, E.

    2011-08-01

    An energetic condensation technique, cathodic arc discharge deposition, is used to grow epitaxial Niobium (Nb) thin films on a-plane sapphire (hexagonal-closed-packed Al2O3) at moderate substrate heating temperature (<400 °C). The epitaxial Nb(110)/Al2O3(1,1,-2,0) thin films reached a maximum residual resistance ratio (RRR) value 214, despite using a reactor-grade Nb cathode source whose RRR was only 30. The measurements suggest that the film's density of impurities and structural defects are lower when compared to Nb films produced by other techniques, such as magnetron sputtering, e-beam evaporation or molecular-beam-epitaxy. At lower substrate temperature, textured polycrystalline Nb thin films were created, and the films might have twin symmetry grains with {110} orientations in-plane. The texture was revealed by x-ray diffraction pole figures. The twin symmetry might be caused by a combination effect of the Nb/Al2O3 three-dimensional epitaxial relationship ("3D-Registry" Claassen's nomenclature) and the "Volmer-Weber" (Island) growth model. However, pole figures obtained by electron backscattering diffraction (EBSD) found no twin symmetry on the thin films' topmost surface (˜50 nm in depth). The EBSD pole figures showed only one Nb{110} crystal plane orientation. A possible mechanism is suggested to explain the differences between the bulk (XRD) and surface (EBSD) pole figures.

  6. Fabrication and characterization of Al2O3 /Si composite nanodome structures for high efficiency crystalline Si thin film solar cells

    NASA Astrophysics Data System (ADS)

    Zhang, Ruiying; Zhu, Jian; Zhang, Zhen; Wang, Yanyan; Qiu, Bocang; Liu, Xuehua; Zhang, Jinping; Zhang, Yi; Fang, Qi; Ren, Zhong; Bai, Yu

    2015-12-01

    We report on our fabrication and characterization of Al2O3/Si composite nanodome (CND) structures, which is composed of Si nanodome structures with a conformal cladding Al2O3 layer to evaluate its optical and electrical performance when it is applied to thin film solar cells. It has been observed that by application of Al2O3thin film coating using atomic layer deposition (ALD) to the Si nanodome structures, both optical and electrical performances are greatly improved. The reflectivity of less than 3% over the wavelength range of from 200 nm to 2000 nm at an incident angle from 0° to 45° is achieved when the Al2O3 film is 90 nm thick. The ultimate efficiency of around 27% is obtained on the CND textured 2 μm-thick Si solar cells, which is compared to the efficiency of around 25.75% and 15% for the 2 μm-thick Si nanodome surface-decorated and planar samples respectively. Electrical characterization was made by using CND-decorated MOS devices to measure device's leakage current and capacitance dispersion. It is found the electrical performance is sensitive to the thickness of the Al2O3 film, and the performance is remarkably improved when the dielectric layer thickness is 90 nm thick. The leakage current, which is less than 4x10-9 A/cm2 over voltage range of from -3 V to 3 V, is reduced by several orders of magnitude. C-V measurements also shows as small as 0.3% of variation in the capacitance over the frequency range from 10 kHz to 500 kHz, which is a strong indication of surface states being fully passivated. TEM examination of CND-decorated samples also reveals the occurrence of SiOx layer formed between the interface of Si and the Al2O3 film, which is thin enough that ensures the presence of field-effect passivation, From our theoretical and experimental study, we believe Al2O3 coated CND structures is a truly viable approach to achieving higher device efficiency.

  7. Integration of crystalline orientated γ-Al2O3 films and complementary metal-oxide-semiconductor circuits on Si(1 0 0) substrate

    NASA Astrophysics Data System (ADS)

    Oishi, Koji; Akai, Daisuke; Ishida, Makoto

    2015-01-01

    In this paper, integration of crystalline orientated γ-Al2O3 films and complementary metal-oxide-semiconductor (CMOS) circuits on Si(1 0 0) substrate was reported. In this integration processes, crystalline γ-Al2O3 films need to be preserved their crystallinity during high temperature annealing processes of CMOS fabrication in order to prevent surface condition changes. The γ-Al2O3 films grown on Si substrates are annealed in the CMOS fabrication process conditions, drive-in annealing at 1150 °C in O2 atmosphere and wet annealing 1000 °C in H2O vapor atmosphere. Reflection high energy electron diffraction (RHEED) and x-ray diffraction (XRD) were used to characterize the crystallinity of γ-Al2O3 films after the annealing processes. Surface conditions of the films are analyzed and observed with X-ray photoelectron spectroscopy (XPS) and scanning electron microscope (SEM). As a result, RHEED patterns of the γ-Al2O3 films indicated that wet oxidation annealing was a critical process severally inferior surface condition of crystalline γ-Al2O3 films. XRD, XPS, and SEM investigation unveiled further details of the crystallinity changes on γ-Al2O3 films for each process. These results indicated passivation films were required to integrate γ-Al2O3 films with CMOS fabrication process. Therefore we proposed and introduced Si3N4/TEOS passivation films on γ-Al2O3 films in CMOS fabrication processes. At last, MOSFETs on γ-Al2O3 integrated Si(1 0 0) substrate were fabricated and characterized. The designed characteristics of MOSFETs were obtained on γ-Al2O3 integrated Si substrate.

  8. Atomic layer deposition (ALD) of TiO2 and Al2O3 thin films on silicon

    NASA Astrophysics Data System (ADS)

    Mitchell, David R. G.; Triani, Gerry; Attard, Darren J.; Finnie, Kim S.; Evans, Peter J.; Barbe, Christophe J.; Bartlett, John R.

    2004-04-01

    The essential features of the ALD process involve sequentially saturating a surface with a (sub)monolayer of reactive species, such as a metal halide, then reacting it with a second species to form the required phase in-situ. Repetition of the reaction sequence allows the desired thickness to be deposited. The self-limiting nature of the reactions ensures excellent conformality, and sequential processing results in exquisite control over film thickness, albeit at rather slow deposition rates, typically <200nm/hr. We have been developing our capability with ALD deposition, to understand the influence of deposition parameters on the nature of TiO2 and Al2O3 films (high and low refractive index respectively), and multilayer stacks thereof. These stacks have potential applications as anti-reflection coatings and optical filters. This paper will explore the evolution of structure in our films as a function of deposition parameters including temperature and substrate surface chemistry. A broad range of techniques have been applied to the study of these films, including cross sectional transmission electron microscopy, spectroscopic ellipsometry, secondary ion mass spectrometry etc. These have enabled a wealth of microstructural and compositional information on the films to be acquired, such as accurate film thickness, composition, crystallization sequence and orientation with respect to the substrate. The ALD method is shown to produce single layer films and multilayer stacks with exceptional uniformity and flatness, and in the case of stacks, chemically abrupt interfaces. We are currently extending this technology to the coating of polymeric substrates.

  9. Optical and electrical properties of ZnO nanocrystal thin films passivated by atomic layer deposited Al2O3

    NASA Astrophysics Data System (ADS)

    Choi, Ji-Hyuk; Kim, Jungwoo; Oh, Soong Ju; Kim, Daekyoung; Kim, Yong-Hoon; Chae, Heeyeop; Kim, Hyoungsub

    2016-07-01

    While colloidal semiconductor nanocrystal (NC) is preferred for use in solution-based optoelectronic devices, the large number of surface defects associated with its high surface-to-volume ratio degrades the optimal performance of NC-based devices due to the extensive trapping of free carriers available for charge transport. Here, we studied a simple and effective strategy to control the degree of passivation and doping level of solution-deposited ZnO NC films by infilling with ultra-thin Al2O3 using an atomic layer deposition (ALD) technique. According to various spectroscopic, microstructural, and electrical analyses, the ALD-Al2O3 treatment dramatically reduced the number of surface trap states with high ambient stability while simultaneously supplied excess carriers probably via a remote doping mechanism. As a consequence, the field-effect transistors built using the ZnO NC films with ALD-Al2O3 treatment for an optimal number of cycles exhibited significantly enhanced charge transport.

  10. Memristive behavior of Al2O3 film with bottom electrode surface modified by Ag nanoparticles

    NASA Astrophysics Data System (ADS)

    Qin, Shu-Chao; Dong, Rui-Xin; Yan, Xun-Ling

    2014-09-01

    The memristive behavior of Al2O3-based device is significantly improved by introducing Ag nanoparticles (NPs). Inserting Ag NPs can effectively reduce the switching voltages, increase the resistance ratio (about 104) and enhance the sweep endurance (300 cycles). In particular, the stable switching properties are obtained by inserting an Ag NPs layer with an average diameter of 14 nm on the surface of bottom electrode, and the devices show a long retention time (more than 106 s) compared with the devices without Ag NPs. The switching mechanism is related to the oxygen-vacancy-based conducting filaments and the interfacial effect. The local enhancement and nonuniform distribution of electric field have the benefits to promote, induce and modulate the growth of conducting filaments, such as shape, location and orientation, which are responsible for the improvement performance of the devices.

  11. Memristive behavior of Al2O3 film with bottom electrode surface modified by Ag nanoparticles

    NASA Astrophysics Data System (ADS)

    Qin, Shu-Chao; Dong, Rui-Xin; Yan, Xun-Ling

    2015-02-01

    The memristive behavior of Al2O3-based device is significantly improved by introducing Ag nanoparticles (NPs). Inserting Ag NPs can effectively reduce the switching voltages, increase the resistance ratio (about 104) and enhance the sweep endurance (300 cycles). In particular, the stable switching properties are obtained by inserting an Ag NPs layer with an average diameter of 14 nm on the surface of bottom electrode, and the devices show a long retention time (more than 106 s) compared with the devices without Ag NPs. The switching mechanism is related to the oxygen-vacancy-based conducting filaments and the interfacial effect. The local enhancement and nonuniform distribution of electric field have the benefits to promote, induce and modulate the growth of conducting filaments, such as shape, location and orientation, which are responsible for the improvement performance of the devices.

  12. Laser damage properties of TiO2/Al2O3 thin films grown by atomic layer deposition

    NASA Astrophysics Data System (ADS)

    Wei, Yaowei; Liu, Hao; Sheng, Ouyang; Liu, Zhichao; Chen, Songlin; Yang, Liming

    2011-08-01

    Research on thin film deposited by atomic layer deposition (ALD) for laser damage resistance is rare. In this paper, it has been used to deposit TiO2/Al2O3 films at 110° C and 280° C on fused silica and BK7 substrates. Microstructure of the thin films was investigated by x-ray diffraction. The laser-induced damage threshold (LIDT) of samples was measured by a damage test system. Damage morphology was studied under a Nomarski differential interference contrast microscope and further checked under an atomic force microscope. Multilayers deposited at different temperatures were compared. The results show that the films deposited by ALD had better uniformity and transmission; in this paper, the uniformity is better than 99% over 100mm Φ samples, and the transmission is more than 99.8% at 1064nm. Deposition temperature affects the deposition rate and the thin film microstructure and further influences the LIDT of the thin films. As to the TiO2/Al2O3 films, the LIDTs were 6.73±0.47J/cm2 and 6.5±0.46J/cm2 at 110° C on fused silica and BK7 substrates, respectively. The LIDTs at 110° C are notably better than 280° C.

  13. Regimes of leakage current in ALD-processed Al2O3 thin-film layers

    NASA Astrophysics Data System (ADS)

    Spahr, Holger; Reinker, Johannes; Bülow, Tim; Nanova, Diana; Johannes, Hans-Hermann; Kowalsky, Wolfgang

    2013-04-01

    A recently known phenomenon of thin oxide layers with thicknesses below approximately 40 nm is the increase in their breakdown electric field, called disruptive strength, towards lower thicknesses. This offers the possibility of examining the current-electric field characteristics at higher electric field strengths without an early electric breakdown. In this paper, we report on the identification of a current regime of trap-free square law and the buildup of an S-shaped current-electric field characteristic curve. This observation for atomic layer deposition (ALD)-processed Al2O3 layers has not been mentioned in the literature so far. Additionally, a modern model of space charge limited current is used to fit the S-shaped characteristic and extract the associated parameters, such as mobility, density of states, and the energy band gap between the conduction band and the trap state. In this context, the Poole-Frenkel effect is neglected in the model to fit our measurements towards the current increase after the trap filled limit.

  14. Synthesis of anodizing composite films containing superfine Al 2O 3 and PTFE particles on Al alloys

    NASA Astrophysics Data System (ADS)

    Chen, Suiyuan; Kang, Chen; Wang, Jing; Liu, Changsheng; Sun, Kai

    2010-09-01

    Anodized composite films containing superfine Al 2O 3 and PTFE particles were prepared on 2024 Al alloy using an anodizing method. The microstructures and properties of the films were studied by scanning electron microscopy, optical microscopy and X-ray diffraction. Friction wear tests were performed to evaluate the mechanical properties of the composites. Results indicate that the composite films with reinforced Al 2O 3 and PTFE two-particles have reduced friction coefficients and relatively high microhardness. The friction coefficient can be as small as 0.15, which is much smaller than that of an oxide film prepared under the same conditions but without adding any particles (0.25), while the microhardness can reach as high as 404 HV. When rubbed at room temperature for 20 min during dry sliding friction tests, the wear loss of the film was about 16 mg, which is about the half of that of the samples without added particles. The synthesized composite films that have good anti-wear and self-lubricating properties are desirable for oil-free industrial machinery applications.

  15. Preparation and characterization of Co epitaxial thin films on Al2O3(0001) single-crystal substrates

    NASA Astrophysics Data System (ADS)

    Yabuhara, Osamu; Ohtake, Mitsuru; Nukaga, Yuri; Futamoto, Masaaki

    2011-01-01

    Co epitaxial thin films were prepared on Al2O3(0001) single-crystal substrates in a substrate temperature range between 50 and 500 °C by ultra high vacuum molecular beam epitaxy. Effects of substrate temperature on the structure and the magnetic properties of the films were investigated. The films grown at temperatures lower than 150 °C consist of fcc- Co(111) crystal. With increasing the substrate temperature, hcp-Co(0001) crystal coexists with the fcc crystal and the volume ratio of hcp to fcc crystal increases. The films prepared at temperatures higher than 250 °C consist primarily of hcp crystal. The film growth seems to follow island-growth mode. The films consisting primarily of hcp crystal show perpendicular magnetic anisotropy. The domain structure and the magnetization properties are influenced by the magnetocrystalline anisotropy and the shape anisotropy caused by the film surface roughness.

  16. The adsorption of water on Cu2O and Al2O3 thin films

    SciTech Connect

    Deng, Xingyi; Herranz, Tirma; Weis, Christoph; Bluhm, Hendrik; Salmeron, Miquel

    2008-06-27

    The initial stages of water condensation, approximately 6 molecular layers, on two oxide surfaces, Cu{sub 2}O and Al{sub 2}O{sub 3}, have been investigated by using ambient pressure X-ray photoelectron spectroscopy at relative humidity values (RH) from 0 to >90%. Water adsorbs first dissociatively on oxygen vacancies producing adsorbed hydroxyl groups in a stoichiometric reaction: O{sub lattic} + vacancies + H{sub 2}O = 2OH. The reaction is completed at {approx}1% RH and is followed by adsorption of molecular water. The thickness of the water film grows with increasing RH. The first monolayer is completed at {approx}15% RH on both oxides and is followed by a second layer at 35-40% RH. At 90% RH, about 6 layers of H{sub 2}O film have been formed on Al{sub 2}O{sub 3}.

  17. Spectral density analysis of the optical properties of Ni-Al2O3 nano-composite films

    NASA Astrophysics Data System (ADS)

    Niklasson, Gunnar A.; Boström, Tobias K.; Tuncer, Enis

    2011-09-01

    Thin films consisting of transition metal nanoparticles in an insulating oxide exhibit a high solar absorptance together with a low thermal emittance and are used as coatings on solar collector panels. In order to optimise the nanocomposites for this application a more detailed understanding of their optical properties is needed. Here we use a highly efficient recently developed numerical method to extract the spectral density function of nickel-aluminum oxide (Ni-Al2O3) composites from experimental data on the dielectric permittivity in the visible and near-infrared wavelength ranges. Thin layers of Ni-Al2O3 were produced by a sol-gel technique. Reflectance and transmittance spectra were measured by spectrophotometry in the wavelength range 300 to 2500 nm for films with thicknesses in the range 50 to 100 nm. Transmission electron microscopy showed crystalline Ni particles with sizes in the 3 to 10 nm range. The spectral density function shows a multi-peak structure with three or four peaks clearly visible. The peak positions are influenced by particle shape, local volume fraction distributions and particle-particle interactions giving rise to structural resonances in the response of the composite to an electromagnetic field.

  18. Slow charge recombination in dye-sensitised solar cells (DSSC) using Al2O3 coated nanoporous TiO2 films.

    PubMed

    Palomares, Emilio; Clifford, John N; Haque, Saif A; Lutz, Thierry; Durrant, James R

    2002-07-21

    The conformal growth of an overlayer of Al2O3 on a nanocrystalline TiO2 film is shown to result in a 4-fold retardation of interfacial charge recombination, and a 30% improvement in photovoltaic device efficiency.

  19. Epitaxial growth and electric properties of γ-Al2O3(110) films on β-Ga2O3(010) substrates

    NASA Astrophysics Data System (ADS)

    Hattori, Mai; Oshima, Takayoshi; Wakabayashi, Ryo; Yoshimatsu, Kohei; Sasaki, Kohei; Masui, Takekazu; Kuramata, Akito; Yamakoshi, Shigenobu; Horiba, Koji; Kumigashira, Hiroshi; Ohtomo, Akira

    2016-12-01

    Epitaxial growth and electrical properties of γ-Al2O3 films on β-Ga2O3(010) substrates were investigated regarding the prospect of a gate oxide in a β-Ga2O3-based MOSFET. The γ-Al2O3 films grew along the [110] direction and inherited the oxygen sublattice from β-Ga2O3 resulting in the unique in-plane epitaxial relationship of γ-Al2O3 [\\bar{1}10] ∥ β-Ga2O3[001]. We found that the γ-Al2O3 layer had a band gap of 7.0 eV and a type-I band alignment with β-Ga2O3 with conduction- and valence-band offsets of 1.9 and 0.5 eV, respectively. A relatively high trap density (≅ 2 × 1012 cm-2 eV-1) was found from the voltage shift of photoassisted capacitance-voltage curves measured for a Au/γ-Al2O3/β-Ga2O3 MOS capacitor. These results indicate good structural and electric properties and some limitations hindering the better understanding of the role of the gate dielectrics (a γ-Al2O3 interface layer naturally crystallized from amorphous Al2O3) in the β-Ga2O3 MOSFET.

  20. Top gate ZnO-Al2O3 thin film transistors fabricated using a chemical bath deposition technique

    NASA Astrophysics Data System (ADS)

    Gogoi, Paragjyoti; Saikia, Rajib; Changmai, Sanjib

    2015-04-01

    ZnO thin films were prepared by a simple chemical bath deposition technique using an inorganic solution mixture of ZnCl2 and NH3 on glass substrates and then were used as the active material in thin film transistors (TFTs). The TFTs were fabricated in a top gate coplanar electrode structure with high-k Al2O3 as the gate insulator and Al as the source, drain and gate electrodes. The TFTs were annealed in air at 500 °C for 1 h. The TFTs with a 50 μm channel length exhibited a high field-effect mobility of 0.45 cm2/(V·s) and a low threshold voltage of 1.8 V. The sub-threshold swing and drain current ON-OFF ratio were found to be 0.6 V/dec and 106, respectively.

  1. Si-rich Al2O3 films grown by RF magnetron sputtering: structural and photoluminescence properties versus annealing treatment

    PubMed Central

    2013-01-01

    Silicon-rich Al2O3 films (Six(Al2O3)1−x) were co-sputtered from two separate silicon and alumina targets onto a long silicon oxide substrate. The effects of different annealing treatments on the structure and light emission of the films versus x were investigated by means of spectroscopic ellipsometry, X-ray diffraction, micro-Raman scattering, and micro-photoluminescence (PL) methods. The formation of amorphous Si clusters upon the deposition process was found for the films with x ≥ 0.38. The annealing treatment of the films at 1,050°C to 1,150°C results in formation of Si nanocrystallites (Si-ncs). It was observed that their size depends on the type of this treatment. The conventional annealing at 1,150°C for 30 min of the samples with x = 0.5 to 0.68 leads to the formation of Si-ncs with the mean size of about 14 nm, whereas rapid thermal annealing of similar samples at 1,050°C for 1 min showed the presence of Si-ncs with sizes of about 5 nm. Two main broad PL bands were observed in the 500- to 900-nm spectral range with peak positions at 575 to 600 nm and 700 to 750 nm accompanied by near-infrared tail. The low-temperature measurement revealed that the intensity of the main PL band did not change with cooling contrary to the behavior expected for quantum confined Si-ncs. Based on the analysis of PL spectrum, it is supposed that the near-infrared PL component originates from the exciton recombination in the Si-ncs. However, the most intense emission in the visible spectral range is due to either defects in matrix or electron states at the Si-nc/matrix interface. PMID:23758885

  2. Magnetic properties and anisotropic coercivity in nanogranular films of Co/Al2O3 above the percolation limit

    NASA Astrophysics Data System (ADS)

    Kulyk, M. M.; Kalita, V. M.; Lozenko, A. F.; Ryabchenko, S. M.; Stognei, O. V.; Sitnikov, A. V.; Korenivski, V.

    2014-08-01

    Magnetic properties of nanogranular ferromagnetic Co/Al2O3 films with 74.5 at% Co, which is above the percolation limit, are investigated. It is established that the films have perpendicular magnetic anisotropy and a weaker in-plane anisotropy. The magnetization curves show that the film consists of two magnetic components: a dominating contribution from magneto-anisotropic isolated grains with the anisotropy axis perpendicular to the film plane and a weaker contribution from the percolated part of the film. This two-component magnetic composition of the films, with the dominating contribution from the nanograins, is confirmed by transmission electron microscopy as well as by ferromagnetic resonance spectroscopy. It is further established that the coercive field of the film is almost entirely determined by the percolated part of the film. In this, the angular dependence of the coercive force, Hc (θH), is essentially proportional to sin-1θH, where θH is the angle between the applied field and the film's normal. However, for θH → 0, Hc (θH) there is a narrow minimum with Hc approaching zero. Such non-linear dependence agrees well with our modelling results for a two-component magnetic system of the film, where the non-percolated nanograins have a distinct perpendicular anisotropy. The reported results should be important for in-depth characterization and understanding the magnetism and anisotropy in inhomogeneous systems as well as for applications, specifically in perpendicular magnetic recording.

  3. Effects of annealing conditions on the dielectric properties of solution-processed Al2O3 layers for indium-zinc-tin-oxide thin-film transistors.

    PubMed

    Kim, Yong-Hoon; Kim, Kwang-Ho; Park, Sung Kyu

    2013-11-01

    In this paper, the effects of annealing conditions on the dielectric properties of solution-processed aluminum oxide (Al2O3) layers for indium-zinc-tin-oxide (IZTO) thin-film transistors (TFTs) have been investigated. The dielectric properties of Al2O3 layers such as leakage current density and dielectric strength were largely affected by their annealing conditions. In particular, oxygen partial pressure in rapid thermal annealing, and the temperature profile of hot plate annealing had profound effects on the dielectric properties. From a refractive index analysis, the enhanced dielectric properties of Al2O3 gate dielectrics can be attributed to higher film density depending on the annealing conditions. With the low-temperature-annealed Al2O3 gate dielectric at 350 degrees C, solution-processed IZTO TFTs with a field-effect mobility of approximately 2.2 cm2/Vs were successfully fabricated.

  4. Properties of the surface of ceramic formed under laser irradiation of Al2O3-TiO2 compacts

    NASA Astrophysics Data System (ADS)

    Márquez Aguilar, P. A.; Vlasova, M.; Escobar Martínez, A.; Tomila, T.; Stetsenko, V.

    2014-04-01

    The phase formation in the laser irradiation area from xAl2O3-yTiO2 compacts and the properties of the surface layer have been investigated by the XRD, IR, and SEM methods. Main phases precipitating from eutectic melt are tialite, corundum, and rutile. A high temperature on the surface of specimens leads to the development of dissociation processes of these compounds and molecules of the gaseous medium. As dissociation products fly apart and pass through different temperature zone, there are formed different metal oxides, metal hydroxides, and thermolysis products. When these different oxides are deposited on the surface of the ceramic, they form layers with different adhesion degrees.

  5. Properties of atomic-layer-deposited Al2O3/ZnO dielectric films grown at low temperature for RF MEMS

    NASA Astrophysics Data System (ADS)

    Herrmann, Cari F.; Del Rio, Frank W.; George, Steven M.; Bright, Victor M.

    2005-01-01

    Al2O3/ZnO alloy films were grown at 100°C using atomic layer deposition (ALD) techniques. It has been previously established that the resistivity of these films can be tuned over a wide range by varying the amount of Zn in the film. Al2O3/ZnO ALD alloy films can therefore be designed with a dielectric constant high enough to provide a large down-state capacitance and a resistivity low enough to promote the dissipation of trapped charges. The material and electrical properties of the Al2O3/ZnO ALD films were investigated using Auger electron spectroscopy (AES), nanoindentation, and mercury probe measurements. Chemical analysis using AES confirmed the presence of both Al and Zn in the alloys. The nanoindentation measurements were used to calculate the Young's modulus and hardness of the films. Pure Al2O3 ALD was determined to have a modulus between 150 and 155 GPa and a hardness of ~8 GPa, while the results for pure ZnO ALD indicated a modulus between 120 and 140 GPa and a hardness of ~5 GPa. An Al2O3/ZnO ALD alloy displayed a modulus of 140-145 GPa, which falls between the two pure films, and a hardness of ~8 GPa, which is similar to the pure Al2O3 film. The dielectric constants of the ALD films were calculated from the mercury probe measurements and were determined to be around 6.8. These properties indicate that the Al2O3/ZnO ALD films can be engineered as a property specific dielectric layer for RF MEMS devices.

  6. Effect of water and ammonia on surface species formed during NO(x) storage-reduction cycles over Pt-K/Al2O3 and Pt-Ba/Al2O3 catalysts.

    PubMed

    Morandi, Sara; Prinetto, Federica; Castoldi, Lidia; Lietti, Luca; Forzatti, Pio; Ghiotti, Giovanna

    2013-08-28

    The effect of water, in the temperature range 25-350 °C, and ammonia at RT on two different surface species formed on Pt-K/Al2O3 and Pt-Ba/Al2O3 NSR catalysts during NO(x) storage-reduction cycles was investigated. The surface species involved are nitrates, formed during the NO(x) storage step, and isocyanates, which are found to be intermediates in N2 production during reduction by CO. FT-IR experiments demonstrate that the dissociative chemisorption of water and ammonia causes the transformation of the bidentate nitrates and linearly bonded NCO(-) species into more symmetric species that we call ionic species. In the case of water, the effect on nitrates is observable at all the temperatures studied; however, the extent of the transformation decreases upon increasing temperature, consistent with the decreased extent of dissociatively adsorbed water. It was possible to hypothesize that the dissociative chemisorption of water and ammonia takes place in a competitive way on surface sites able to give bidentate nitrates and linearly bonded NCO(-) that are dislocated, remaining on the surface as ionic species.

  7. Selenium speciation and partitioning within Burkholderia cepacia biofilms formed on α-Al 2O 3 surfaces

    NASA Astrophysics Data System (ADS)

    Templeton, Alexis S.; Trainor, Thomas P.; Spormann, Alfred M.; Brown, Gordon E.

    2003-10-01

    The distribution and speciation of Se within aerobic Burkholderia cepacia biofilms formed on α-Al 2O 3 (1-102) surfaces have been examined using grazing-angle X-ray spectroscopic techniques. We present quantitative information on the partitioning of 10 -6 M to 10 -3 M selenate and selenite between the biofilms and underlying alumina surfaces derived from long-period X-ray standing wave (XSW) data. Changes in the Se partitioning behavior over time are correlated with microbially induced reduction of Se(VI) and Se(IV) to Se(0), as observed from X-ray absorption near edge structure (XANES) spectroscopy. Selenite preferentially binds to the alumina surfaces, particularly at low [Se], and is increasingly partitioned into the biofilms at higher [Se]. When B. cepacia is metabolically active, B. cepacia rapidly reduces a fraction of the SeO 32- to red elemental Se(0). In contrast, selenate is preferentially partitioned into the B. cepacia biofilms at all [Se] tested due to a lower affinity for binding to the alumina surface. Rapid reduction of SeO 42- by B. cepacia to Se(IV) and Se(0) subsequently results in a vertical segregation of Se species at the B. cepacia/α-Al 2O 3 interface. Elemental Se(0) accumulates within the biofilm with Se(VI), whereas Se(IV) intermediates preferentially sorb to the alumina surface. B. cepacia/α-Al 2O 3 samples incubated with SeO 42- and SeO 32- when the bacteria were metabolically active result in a significant reduction in the mobility of Se vs. X-ray treated biofilms. Remobilization experiments show that a large fraction of the insoluble Se(0) produced within the biofilm is retained during exchange with Se-free solutions. In addition, Se(IV) intermediates generated during Se(VI) reduction are preferentially bound to the alumina surface and do not fully desorb. In contrast, Se(VI) is rapidly and extensively remobilized.

  8. Growth and magnetic anisotropy of thin W(110)/Co films on Al2O3(112¯0)

    NASA Astrophysics Data System (ADS)

    Sellmann, R.; Fritzsche, H.; Maletta, H.; Leiner, V.; Siebrecht, R.

    2001-06-01

    The growth and magnetism of thin W(110)/Co films deposited by molecular beam epitaxy on single-crystal sapphire Al2O3(112¯0) substrates is investigated. Low-energy electron diffraction analysis shows that the Co films grow on the epitaxial W(110) substrate layer with a constant lattice strain up to a Co thickness dCo=20 Å. Pseudomorphic growth is found for the W[11¯0] direction. The thickness-dependent magnetic anisotropy is studied in situ at T=300 K by means of magneto-optical Kerr-effect measurements on a Co wedge-shaped sample prior and after coverage with a Au overlayer. After the coverage the Co wedge reveals a perpendicular magnetic anisotropy for small Co film thickness followed by a spin-reorientation transition from out-of-plane to in-plane alignment of the magnetization vector in the thickness regime 7 Å<=dCo<=9 Å. Spin-dependent neutron reflectivity data provide evidence for a pronounced magnetic anisotropy within the film plane even for relatively thick Co films. The observed decrease of the splitting between spin-up and spin-down reflectivities for decreasing temperature indicates that the spin-reorientation transition of the system W(110)/Co/Au can also be induced thermally.

  9. Magnetic and structural properties of Fe87Pt13-Al2O3 composite thin films synthesized by solid-state reactions

    NASA Astrophysics Data System (ADS)

    Zhigalov, V. S.; Myagkov, V. G.; Bykova, L. E.; Bondarenko, G. N.; Matsynin, A. A.; Volochaev, M. N.

    2017-02-01

    The structural and magnetic properties of Fe87Pt13 films synthesized by solid-state reactions and Fe87Pt13-Al2O3 composite films fabricated by aluminothermy are investigated. It is shown that the synthesized samples of both types are characterized by the rotational magnetic anisotropy, when the easy magnetization axis in the film plane can be set by a magnetic field. It is established that the value of rotational magnetic anisotropy in the Fe87Pt13-Al2O3 composite films is higher than in the Fe87Pt13 samples by an order of magnitude. The rotational magnetic anisotropy is assumed to be caused by the exchange coupling of the L10-FePt phase with the L12-Fe3Pt phase in the Fe87Pt13 films and magnetic iron oxides in the Fe87Pt13-Al2O3 samples.

  10. Effect of Al2O3 Micro-powder Additives on the Properties of Micro-arc Oxidation Coatings Formed on 6061 Aluminum Alloy

    NASA Astrophysics Data System (ADS)

    Wang, Ping; Wu, Ting; Xiao, You Tao; Pu, Jun; Guo, Xiao Yang; Huang, Jun; Xiang, Chun Lang

    2016-09-01

    Al2O3 micro-powder was suspended in the basis electrolyte to form micro-arc oxidation (MAO) coatings on 6061 aluminum alloy by MAO. During the stage of micro-arc oxidation, Al2O3 micro-powder with negative surface charge was melted by the micro-arc around the anode and incorporated into the MAO coatings. With the continuous addition of Al2O3 micro-powder, the oxidation voltages rose up firstly and then decreased. The surface and cross-sectional morphologies showed that the size of micropores decreased and the MAO coatings surface got loosened following the variation in Al2O3 micro-powder concentration. As a consequence of the changing coating structure, the corrosion resistance of the coatings decreased apparently. The micro-hardness of the coatings increased firstly and then decreased, opposite to the trend of the average friction coefficient. It revealed the minimum average friction coefficient of MAO coatings and maximum adhesion between the coatings and substrate when 2.0 g/L Al2O3 micro-powder was added into electrolyte. There were visible cracks and peelings on the coating surface merely at 4.0 g/L after thermal shock tests. The x-ray diffraction results indicated that the addition of Al2O3 micro-powder had less effect on the phase composition of MAO coatings.

  11. Al2O3 thin films by plasma-enhanced chemical vapour deposition using trimethyl-amine alane (TMAA) as the Al precursor

    NASA Astrophysics Data System (ADS)

    Chryssou, C. E.; Pitt, C. W.

    We report the low temperature (200-300 °C) deposition of uniform, amorphous Al2O3 thin films by plasma-enhanced chemical vapour deposition (PECVD) using trimethyl-amine alane (TMAA) as the Al precursor. The thin films were deposited on both Si and quartz silica (SiO2) substrates. Deposition rates were typically 60 Åmin-1 keeping the TMAA temperature constant at 45 °C. The deposited Al2O3 thin films were stoichiometric alumina with low carbon contamination (0.7-1.3 At%). The refractive index ranged from 1.54 to 1.62 depending on the deposition conditions. The deposition rate was studied as a function of both the RF power and the substrate temperature. The structure and the surface of the deposited Al2O3 thin films were studied using X-ray diffraction, atomic force microscopy (AFM) and scanning electron microscopy (SEM).

  12. Electrically programmable-erasable In-Ga-Zn-O thin-film transistor memory with atomic-layer-deposited Al2O3/Pt nanocrystals/Al2O3 gate stack

    NASA Astrophysics Data System (ADS)

    Qian, Shi-Bing; Zhang, Wen-Peng; Liu, Wen-Jun; Ding, Shi-Jin

    2015-12-01

    Amorphous indium-gallium-zinc oxide (a-IGZO) thin-film transistor (TFT) memory is very promising for transparent and flexible system-on-panel displays; however, electrical erasability has always been a severe challenge for this memory. In this article, we demonstrated successfully an electrically programmable-erasable memory with atomic-layer-deposited Al2O3/Pt nanocrystals/Al2O3 gate stack under a maximal processing temperature of 300 oC. As the programming voltage was enhanced from 14 to 19 V for a constant pulse of 0.2 ms, the threshold voltage shift increased significantly from 0.89 to 4.67 V. When the programmed device was subjected to an appropriate pulse under negative gate bias, it could return to the original state with a superior erasing efficiency. The above phenomena could be attributed to Fowler-Nordheim tunnelling of electrons from the IGZO channel to the Pt nanocrystals during programming, and inverse tunnelling of the trapped electrons during erasing. In terms of 0.2-ms programming at 16 V and 350-ms erasing at -17 V, a large memory window of 3.03 V was achieved successfully. Furthermore, the memory exhibited stable repeated programming/erasing (P/E) characteristics and good data retention, i.e., for 2-ms programming at 14 V and 250-ms erasing at -14 V, a memory window of 2.08 V was still maintained after 103 P/E cycles, and a memory window of 1.1 V was retained after 105 s retention time.

  13. Thermo-Optical Properties of Thin-Film TiO2–Al2O3 Bilayers Fabricated by Atomic Layer Deposition

    PubMed Central

    Ali, Rizwan; Saleem, Muhammad Rizwan; Pääkkönen, Pertti; Honkanen, Seppo

    2015-01-01

    We investigate the optical and thermo-optical properties of amorphous TiO2–Al2O3 thin-film bilayers fabricated by atomic layer deposition (ALD). Seven samples of TiO2–Al2O3 bilayers are fabricated by growing Al2O3 films of different thicknesses on the surface of TiO2 films of constant thickness (100 nm). Temperature-induced changes in the optical refractive indices of these thin-film bilayers are measured by a variable angle spectroscopic ellipsometer VASE®. The optical data and the thermo-optic coefficients of the films are retrieved and calculated by applying the Cauchy model and the linear fitting regression algorithm, in order to evaluate the surface porosity model of TiO2 films. The effects of TiO2 surface defects on the films’ thermo-optic properties are reduced and modified by depositing ultra-thin ALD-Al2O3 diffusion barrier layers. Increasing the ALD-Al2O3 thickness from 20 nm to 30 nm results in a sign change of the thermo-optic coefficient of the ALD-TiO2. The thermo-optic coefficients of the 100 nm-thick ALD-TiO2 film and 30 nm-thick ALD-Al2O3 film in a bilayer are (0.048 ± 0.134) × 10−4 °C−1 and (0.680 ± 0.313) × 10−4 °C−1, respectively, at a temperature T = 62 °C.

  14. CROSS-DISCIPLINARY PHYSICS AND RELATED AREAS OF SCIENCE AND TECHNOLOGY: Excellent Passivation of p-Type Si Surface by Sol-Gel Al2O3 Films

    NASA Astrophysics Data System (ADS)

    Xiao, Hai-Qing; Zhou, Chun-Lan; Cao, Xiao-Ning; Wang, Wen-Jing; Zhao, Lei; Li, Hai-Ling; Diao, Hong-Wei

    2009-08-01

    Al2O3 films with a thickness of about 100 nm synthesized by spin coating and thermally treated are applied for field-induced surface passivation of p-type crystalline silicon. The level of surface passivation is determined by techniques based on photoconductance. An effective surface recombination velocity below 100 cm/s is obtained on 10Ω ·cm p-type c-Si wafers (Cz Si). A high density of negative fixed charges in the order of 1012 cm-2 is detected in the Al2O3 films and its impact on the level of surface passivation is demonstrated experimentally. Furthermore, a comparison between the surface passivation achieved for thermal SiO2 and plasma enhanced chemical vapor deposition SiNx:H films on the same c-Si is presented. The high negative fixed charge density explains the excellent passivation of p-type c-Si by Al2O3.

  15. Role of oxygen pressure on the structural, morphological and optical properties of c-Al2O3 films deposited by thermal evaporator

    NASA Astrophysics Data System (ADS)

    Khan, Ijaz Ahmad; Amna, Noureen; Kanwal, Nosheen; Razzaq, Maleeha; Farid, Amjad; Amin, Nasir; Ikhlaq, Uzma; Saleem, Murtaza; Ahmad, Riaz

    2017-03-01

    Aluminum oxide (c-Al2O3) films are deposited for various (0.5, 1, 1.5 and 2 mbar) oxygen pressures on glass substrates by thermal evaporator. The x-ray diffraction patterns exhibit the development of single diffraction peak related to c-Al2O3 phase which grows along (2 2 0) orientation up to 1.5 mbar pressure. For 2 mbar pressure, the deposited film becomes amorphous because no diffraction peak is observed. A minimum FWHM and maximum crystallite size of c-Al2O3 (2 2 0) plane is observed for 1 mbar pressure. The enhanced crystallite size of c-Al2O3 (2 2 0) plane is responsible to decrease the dislocation density and residual stresses developed during the deposition process. The field emission scanning electron microscopic analysis reveals the formation of smooth, uniform and compact films showing uniform distribution of nano-particles of different shapes and sizes. The energy dispersive x-ray spectroscopic analysis confirms the presence of Al whose content is decreased with the increase of oxygen pressures. The ellipsometric analysis confirms that the refractive index and the thickness of c-Al2O3 film deposited for 0.5 mbar pressure are found to 1.685 and 124.43 nm respectively. In short, the crystal structure, surface morphology, film thickness and refractive index of c-Al2O3 films are associated with the increase of oxygen pressures.

  16. WE-AB-BRB-08: Progress Towards a 2D OSL Dosimetry System Using Al2O3:C Films

    SciTech Connect

    Ahmed, M F; Yukihara, E; Schnell, E; Ahmad, S; Akselrod, M; Brons, S; Greilich, S; Jakel, O; Osinga, J

    2015-06-15

    Purpose: To develop a 2D dosimetry system based on the optically stimulated luminescence (OSL) of Al{sub 2}O{sub 3}:C films for medical applications. Methods: A 2D laser scanning OSL reader was built for readout of newly developed Al2O3:C films (Landauer Inc.). An image reconstruction algorithm was developed to correct for inherent effects introduced by reader design and detector properties. The system was tested using irradiations with photon and carbon ion beams. A calibration was obtained using a 6 MV photon beam from clinical accelerator and the dose measurement precision was tested using a range of doses and different dose distributions (flat field and wedge field). The dynamic range and performance of the system in the presence of large dose gradients was also tested using 430 MeV/u {sup 12}C single and multiple pencil beams. All irradiations were performed with Gafchromic EBT3 film for comparison. Results: Preliminary results demonstrate a near-linear OSL dose response to photon fields and the ability to measure dose in dose distributions such as flat field and wedge field. Tests using {sup 12}C pencil beam demonstrate ability to measure doses over four orders of magnitude. The dose profiles measured by the OSL film generally agreed well with that measured by the EBT3 film. The OSL image signal-to-noise ratio obtained in the current conditions require further improvement. On the other hand, EBT3 films had large uncertainties in the low dose region due to film-to-film or intra-film variation in the background. Conclusion: A 2D OSL dosimetry system was developed and initial tests have demonstrated a wide dynamic range as well as good agreement between the delivered and measured doses. The low background, wide dynamic range and wide range of linearity in dose response observed for the Al{sub 2}O{sub 3}:C OSL film can be beneficial for dosimetry in radiation therapy applications, especially for small field dosimetry. This work has been funded by Landauer Inc. Dr

  17. Studies on oxidation and deuterium permeation behavior of a low temperature α-Al2O3-forming Fesbnd Crsbnd Al ferritic steel

    NASA Astrophysics Data System (ADS)

    Xu, Yu-Ping; Zhao, Si-Xiang; Liu, Feng; Li, Xiao-Chun; Zhao, Ming-Zhong; Wang, Jing; Lu, Tao; Hong, Suk-Ho; Zhou, Hai-Shan; Luo, Guang-Nan

    2016-08-01

    To evaluate the capability of Fesbnd Crsbnd Al ferritic steels as tritium permeation barrier in fusion systems, the oxidation behavior together with the permeation behavior of a Fesbnd Crsbnd Al steel was investigated. Gas driven permeation experiments were performed. The permeability of the oxidized Fesbnd Crsbnd Al steel was obtained and a reduced activation ferritic/martensitic steel CLF-1 was used as a comparison. In order to characterize the oxide layer, SEM, XPS, TEM, HRTEM were used. Al2O3 was detected in the oxide film by XPS, and HRTEM showed that Al2O3 in the α phase was found. The formation of α-Al2O3 layer at a relatively low temperature may result from the formation of Cr2O3 nuclei.

  18. Hydrophobicity enhancement of Al2O3 thin films deposited on polymeric substrates by atomic layer deposition with perfluoropropane plasma treatment

    NASA Astrophysics Data System (ADS)

    Ali, Kamran; Choi, Kyung-Hyun; Kim, Chang Young; Doh, Yang Hoi; Jo, Jeongdai

    2014-06-01

    The optoelectronics devices such as organic light emitting diodes are greatly vulnerable to moisture, which reduces their functionality and life cycle. The Al2O3 thin films are mostly used as barrier coatings in such electronic devices to protect them from water vapors. The performance of the Al2O3 barrier films can be improved by enhancing their hydrophobicity. Greater the hydrophobicity of the barrier films, greater will be their protection against water vapors. This paper reports on the enhancement of hydrophobicity of Al2O3 thin films through perfluoropropane (C3F8) plasma treatment. Firstly, good quality Al2O3 films have been fabricated through atomic layer deposition (ALD) on polyethylene naphthalate (PEN) substrates at different temperatures. The fabricated films are then plasma treated with C3F8 to enhance their hydrophobicity. Hydrophobic Al2O3 thin films have shown good morphological and optical properties. Low average arithmetic roughness (Ra) of 1.90 nm, 0.93 nm and 0.88 nm have been recorded for the C3F8 plasma treated films deposited at room temperature (RT), 50 °C and 150 °C, respectively. Optical transmittance of more than 90% has been achieved for the C3F8 plasma treated films grown at 50 °C and 150 °C. The contact angle has been increased from 48° ± 3 to 158° ± 3 for the films deposited at RT and increased from 41° ± 3 to 148° ± 3 for the films deposited at 150 °C.

  19. Partial Melt Processing of Solid-Solution Bi2Sr2CaCu2O8+delta Thick-Film Conductors with Nanophase Al2O3 Additions

    DTIC Science & Technology

    2006-04-01

    range of partial-melt temperatures. Results were compared to Al2O3-free films with compositions lying within the single-phase solid - solution 2212 region...Nanophase Al2O3 reacted with 2212-type precursors to form a composite of micron size or smaller particles of solid - solution (Sr,Ca)3Al2O6 in a solid ... solution 2212 superconducting matrix. The Ca content of the (Sr,Ca)3Al2O6 in a solid - solution 2212 superconducting matrix. The Ca content of the (Sr,Ca

  20. Effects of channel structure consisting of ZnO/Al2O3 multilayers on thin-film transistors fabricated by atomic layer deposition

    NASA Astrophysics Data System (ADS)

    Cui, Guodong; Han, Dedong; Dong, Junchen; Cong, Yingying; Zhang, Xiaomi; Li, Huijin; Yu, Wen; Zhang, Shengdong; Zhang, Xing; Wang, Yi

    2017-04-01

    By applying a novel active layer comprising ZnO/Al2O3 multilayers, we have successfully fabricated fully transparent high-performance thin-film transistors (TFTs) with a bottom gate structure by atomic layer deposition (ALD) at low temperature. The effects of various ZnO/Al2O3 multilayers were studied to improve the morphological and electrical properties of the devices. We found that the ZnO/Al2O3 multilayers have a significant impact on the performance of the TFTs, and that the TFTs with the ZnO/15-cycle Al2O3/ZnO structure exhibit superior performance with a low threshold voltage (V TH) of 0.9 V, a high saturation mobility (μsat) of 145 cm2 V‑1 s‑1, a steep subthreshold swing (SS) of 162 mV/decade, and a high I on/I off ratio of 3.15 × 108. The enhanced electrical properties were explained by the improved crystalline nature of the channel layer and the passivation effect of the Al2O3 layer.

  1. Microwave plasma-assisted ALD of Al2O3 thin films: a study on the substrate temperature dependence of various parameters of interest

    NASA Astrophysics Data System (ADS)

    Thomas, Subin; Nalini, Savitha; Kumar, K. Rajeev

    2017-03-01

    This study utilizes microwave plasma-assisted atomic layer deposition (MPALD) in remote mode to deposit Al2O3 thin films with increased growth per cycle (GPC). Optical emission spectroscopy (OES) was used to identify the plasma configuration in the ALD chamber. MPALD-Al2O3 thin films were deposited at temperatures ranging from room temperature to 200 °C and the electrical parameters were investigated with Al/Al2O3/p-Si metal oxide semiconductor (MOS) structures. A GPC of 0.24 nm was observed for the films deposited at room temperature. The fixed oxide charge densities ( N fix) in all films were of the order of 1012 cm-2. The interface state density ( D it) exhibited a distinct minimum for the films deposited at 100 °C. The dependence of built-in voltage, N fix, and D it on Al2O3 deposition temperature was investigated. This can be used as a measure of the electrical applicability of these thin films.

  2. Interface Electrical Properties of Al2O3 Thin Films on Graphene Obtained by Atomic Layer Deposition with an in Situ Seedlike Layer.

    PubMed

    Fisichella, Gabriele; Schilirò, Emanuela; Di Franco, Salvatore; Fiorenza, Patrick; Lo Nigro, Raffaella; Roccaforte, Fabrizio; Ravesi, Sebastiano; Giannazzo, Filippo

    2017-03-01

    High-quality thin insulating films on graphene (Gr) are essential for field-effect transistors (FETs) and other electronics applications of this material. Atomic layer deposition (ALD) is the method of choice to deposit high-κ dielectrics with excellent thickness uniformity and conformal coverage. However, to start the growth on the sp(2) Gr surface, a chemical prefunctionalization or the physical deposition of a seed layer are required, which can effect, to some extent, the electrical properties of Gr. In this paper, we report a detailed morphological, structural, and electrical investigation of Al2O3 thin films grown by a two-steps ALD process on a large area Gr membrane residing on an Al2O3-Si substrate. This process consists of the H2O-activated deposition of a Al2O3 seed layer a few nanometers in thickness, performed in situ at 100 °C, followed by ALD thermal growth of Al2O3 at 250 °C. The optimization of the low-temperature seed layer allowed us to obtain a uniform, conformal, and pinhole-free Al2O3 film on Gr by the second ALD step. Nanoscale-resolution mapping of the current through the dielectric by conductive atomic force microscopy (CAFM) demonstrated an excellent laterally uniformity of the film. Raman spectroscopy measurements indicated that the ALD process does not introduce defects in Gr, whereas it produces a partial compensation of Gr unintentional p-type doping, as confirmed by the increase of Gr sheet resistance (from ∼300 Ω/sq in pristine Gr to ∼1100 Ω/sq after Al2O3 deposition). Analysis of the transfer characteristics of Gr field-effect transistors (GFETs) allowed us to evaluate the relative dielectric permittivity (ε = 7.45) and the breakdown electric field (EBD = 7.4 MV/cm) of the Al2O3 film as well as the transconductance and the holes field-effect mobility (∼1200 cm(2) V(-1) s(-1)). A special focus has been given to the electrical characterization of the Al2O3-Gr interface by the analysis of high frequency capacitance

  3. A light-stimulated synaptic transistor with synaptic plasticity and memory functions based on InGaZnOx-Al2O3 thin film structure

    NASA Astrophysics Data System (ADS)

    Li, H. K.; Chen, T. P.; Liu, P.; Hu, S. G.; Liu, Y.; Zhang, Q.; Lee, P. S.

    2016-06-01

    In this work, a synaptic transistor based on the indium gallium zinc oxide (IGZO)-aluminum oxide (Al2O3) thin film structure, which uses ultraviolet (UV) light pulses as the pre-synaptic stimulus, has been demonstrated. The synaptic transistor exhibits the behavior of synaptic plasticity like the paired-pulse facilitation. In addition, it also shows the brain's memory behaviors including the transition from short-term memory to long-term memory and the Ebbinghaus forgetting curve. The synapse-like behavior and memory behaviors of the transistor are due to the trapping and detrapping processes of the holes, which are generated by the UV pulses, at the IGZO/Al2O3 interface and/or in the Al2O3 layer.

  4. Effect of annealing temperature on the structural reorganization of Eu3+ optical centers in Al2O3-Eu2O3-BiOF gel films

    NASA Astrophysics Data System (ADS)

    Malashkevich, G. E.; Kornienko, A. A.; Dunina, E. B.; Prusova, I. V.; Shevchenko, G. P.; Bokshits, Yu. V.

    2007-06-01

    The dependence of the structural reorganization of Eu3+ optical centers in Al2O3-Eu2O3-BiOF films on the annealing temperature has been investigated. It is shown by the methods of crystal field theory and computer simulation that the increase in the annealing temperature from 700 to 1100 °C leads to removal of bismuth from Eu-O-Bi complex centers with the C 3V symmetry in the Al2O3 structure and the change in symmetry from D 3 to O h for a large fraction of EuAlO3 centers.

  5. Atomic layer deposition of TiO2 and Al2O3 on nanographite films: structure and field emission properties

    NASA Astrophysics Data System (ADS)

    Kleshch, Victor I.; Ismagilov, Rinat R.; Smolnikova, Elena A.; Obraztsova, Ekaterina A.; Tuyakova, Feruza; Obraztsov, Alexander N.

    2016-03-01

    Atomic layer deposition (ALD) of metal oxides (MO) was used to modify the properties of nanographite (NG) films produced by direct current plasma-enhanced chemical vapor deposition technique. NG films consist of a few layers of graphene flakes (nanowalls) and nanoscrolls homogeneously distributed over a silicon substrate with a predominantly vertical orientation of graphene sheets to the substrate surface. TiO2 and Al2O3 layers, with thicknesses in the range of 50 to 250 nm, were deposited on NG films by ALD. The obtained NG-MO composite materials were characterized by scanning electron microscopy, energy dispersive x-ray analysis, and Raman spectroscopy. It was found that ALD forms a uniform coating on graphene flakes, while on the surface of needle-like nanoscrolls it forms spherical nanoparticles. Field emission properties of the films were measured in a flat vacuum diode configuration. Analysis based on obtained current-voltage characteristics and electrostatic calculations show that emission from NG-TiO2 films is determined by the nanoscrolls protruding from the TiO2 coverage. The TiO2 layers with thicknesses of <200 nm almost do not affect the overall field emission characteristics of the films. At the same time, these layers are able to stabilize the NG films' surface and can lead to an improvement of the NG cold cathode performance in vacuum electronics.

  6. Realization of Al2O3/MgO laminated structure at low temperature for thin film encapsulation in organic light-emitting diodes

    NASA Astrophysics Data System (ADS)

    Li, Min; Xu, Miao; Zou, Jianhua; Tao, Hong; Wang, Lei; Zhou, Zhongwei; Peng, Junbiao

    2016-12-01

    A laminated structure of Al2O3 and MgO deposited by atomic layer deposition (ALD) is used to realize a thin film encapsulation technology in organic light-emitting diodes (OLEDs). This film was targeted to achieve an excellent barrier performance. As the thickness of MgO layer increased from 0 nm to 20 nm, its physical properties transformed from the amorphous state into a crystalline state. The optimized cyclic ratio of ALD Al2O3 and MgO exhibited much lower water vapor transmission rate (WVTR) of 4.6 × 10-6 gm-2/day evaluated by Calcium (Ca) corrosion at 60 °C&100% RH, owing to the formation of a terrific laminated structure. Top-emitting OLEDs encapsulated with laminated Al2O3/MgO show longer operating lifetime under rigorous environmental conditions. These improvements were attributed to the embedded MgO film that served as a modified layer to establish a laminated structure to obstruct gas permeation, as well as a scavenger to absorb water molecules, thus alleviating the hydrolysis of bulk Al2O3 material.

  7. Realization of Al2O3/MgO laminated structure at low temperature for thin film encapsulation in organic light-emitting diodes.

    PubMed

    Li, Min; Xu, Miao; Zou, Jianhua; Tao, Hong; Wang, Lei; Zhou, Zhongwei; Peng, Junbiao

    2016-12-09

    A laminated structure of Al2O3 and MgO deposited by atomic layer deposition (ALD) is used to realize a thin film encapsulation technology in organic light-emitting diodes (OLEDs). This film was targeted to achieve an excellent barrier performance. As the thickness of MgO layer increased from 0 nm to 20 nm, its physical properties transformed from the amorphous state into a crystalline state. The optimized cyclic ratio of ALD Al2O3 and MgO exhibited much lower water vapor transmission rate (WVTR) of 4.6 × 10(-6) gm(-2)/day evaluated by Calcium (Ca) corrosion at 60 °C&100% RH, owing to the formation of a terrific laminated structure. Top-emitting OLEDs encapsulated with laminated Al2O3/MgO show longer operating lifetime under rigorous environmental conditions. These improvements were attributed to the embedded MgO film that served as a modified layer to establish a laminated structure to obstruct gas permeation, as well as a scavenger to absorb water molecules, thus alleviating the hydrolysis of bulk Al2O3 material.

  8. Preparation and Wear Resistance of Aluminum Composites Reinforced with In Situ Formed TiO/Al2O3

    NASA Astrophysics Data System (ADS)

    Qin, Q. D.; Huang, B. W.; Li, W.; Zeng, Z. Y.

    2016-05-01

    An in situ TiO/Al2O3-reinforced Al composite is successfully prepared using a powder metallurgy route by the reaction of Ti2CO and Al powder. The Ti2CO powder is produced by carrying out a carbothermic reduction of titanium dioxide at 1000 °C. XRD results show that the final product is composed of Al, TiO, Al2O3, and Al3Ti. Morphology examination of the composite reveals the presence of bigger blocks of TiO and fine particles of Al2O3 and the volume fraction of reinforcement is found to range between 18 and 55%. As the volume fraction of the reinforced materials approaches 50%, the particles start to agglomerate. Dry sliding wear tests conducted using a conventional pin-on-disk testing machine show that the wear resistance of the composite is higher than that of the pure aluminum ingot. The wear rate of the composite increases almost linearly with the increase in the wear distance. The sliding wear test shows that as the volume fraction of the reinforced phase increases, the coefficient of friction decreases. The wear mechanism is also discussed.

  9. Vanadium oxides on aluminum oxide supports. 1. Surface termination and reducibility of vanadia films on alpha-Al2O3(0001).

    PubMed

    Todorova, Tanya K; Ganduglia-Pirovano, M Veronica; Sauer, Joachim

    2005-12-15

    Using density functional theory and statistical thermodynamics, we obtained the phase diagram of thin VnOm films of varying thickness (approximately 2-6 A, 1-6 vanadium layers) supported on alpha-Al2O3(0001). Depending on the temperature, oxygen pressure, and vanadium concentration, films with different thickness and termination may form. In ultrahigh vacuum (UHV), at room temperature and for low vanadium concentrations, an ultrathin (1 x 1) O=V-terminated film is most stable. As more vanadium is supplied, the thickest possible films form. Their structures and terminations correspond to previous findings for the (0001) surface of bulk V2O3 [Kresse et al., Surf. Sci. 2004, 555, 118]. The presence of surface vanadyl (O=V) groups is a prevalent feature. They are stable up to at least 800 K in UHV. Vanadyl oxygen atoms induce a V(2p) core-level shift of about 2 eV on the surface V atoms. The reducibility of the supported films is characterized by the energy of oxygen defect formation. For the stable structures, the results vary between 4.11 and 3.59 eV per 1/2O2. In contrast, oxygen removal from the V2O5(001) surface is much easier (1.93 eV). This provides a possible explanation for the lower catalytic activity of vanadium oxides supported on alumina compared to that of crystalline vanadia particles.

  10. Electron stimulated oxidation of Al(111) in H2O vapor: Dipole orientation effects in the Al2O3 thin film

    NASA Astrophysics Data System (ADS)

    Popova, I.; Zhukov, V.; Yates, J. T.; Chen, J. G.

    1999-12-01

    The electron stimulated oxidation of Al(111) using H2O(g) as a source of oxygen has been investigated at 300 K using near edge x-ray absorption fine structure (NEXAFS) and Auger electron spectroscopy. Irradiation with electrons (100 eV, 50 μA/cm2) produced thick Al2O3 film layers (up to 15 Å), compared to the films grown thermally (4 Å) by the same water exposure. A preferential normal orientation of the O-Al bonds was found for the films grown by the electron assisted process, causing the O K-edge NEXAFS spectra to depend on the incident angle of the polarized x-ray beam. In contrast, little polarization of the O-Al bonds was found for the case of Al2O3 films grown by thermal oxidation in H2O(g).

  11. Control of phonon transport by the formation of the Al2O3 interlayer in Al2O3-ZnO superlattice thin films and their in-plane thermoelectric energy generator performance.

    PubMed

    Park, No-Won; Ahn, Jay-Young; Park, Tae-Hyun; Lee, Jung-Hun; Lee, Won-Yong; Cho, Kwanghee; Yoon, Young-Gui; Choi, Chel-Jong; Park, Jin-Seong; Lee, Sang-Kwon

    2017-04-03

    Recently, significant progress has been made in increasing the figure-of-merit (ZT) of various nanostructured materials, including thin-film and quantum dot superlattice structures. Studies have focused on the size reduction and control of the surface or interface of nanostructured materials since these approaches enhance the thermopower and phonon scattering in quantum and superlattice structures. Currently, bismuth-tellurium-based semiconductor materials are widely employed for thermoelectric (TE) devices such as TE energy generators and coolers, in addition to other sensors, for use at temperatures under 400 K. However, new and promising TE materials with enhanced TE performance, including doped zinc oxide (ZnO) multilayer or superlattice thin films, are also required for designing solid-state TE power generating devices with the maximum output power density and for investigating the physics of in-plane TE generators. Herein, we report the growth of Al2O3/ZnO (AO/ZnO) superlattice thin films, which were prepared by atomic layer deposition (ALD), and the evaluation of their electrical and TE properties. All the in-plane TE properties, including the Seebeck coefficient (S), electrical conductivity (σ), and thermal conductivity (κ), of the AO/ZnO superlattice (with a 0.82 nm-thick AO layer) and AO/ZnO films (with a 0.13 nm-thick AO layer) were evaluated in the temperature range 40-300 K, and the measured S, σ, and κ were -62.4 and -17.5 μV K(-1), 113 and 847 (Ω cm)(-1), and 0.96 and 1.04 W m(-1) K(-1), respectively, at 300 K. Consequently, the in-plane TE ZT factor of AO/ZnO superlattice films was found to be ∼0.014, which is approximately two times more than that of AO/ZnO films (ZT of ∼0.007) at 300 K. Furthermore, the electrical power generation efficiency of the TE energy generator consisting of four couples of n-AO/ZnO superlattice films and p-Bi0.5Sb1.5Te3 (p-BST) thin-film legs on the substrate was demonstrated. Surprisingly, the output power of

  12. FePt : Al2O3 nanocomposite thin films synthesized by magnetic trapping assisted pulsed laser deposition with reduced intergranular exchange coupling

    NASA Astrophysics Data System (ADS)

    Lin, J. J.; Pan, Z. Y.; Karamat, S.; Mahmood, S.; Lee, P.; Tan, T. L.; Springham, S. V.; Rawat, R. S.

    2008-05-01

    FePt : Al2O3 nanocomposite thin films synthesized by magnetic trapping (MT) assisted pulsed laser deposition (PLD) were found to have lower transition temperature for L10 face-centred-tetragonal (fct) phase due to higher concentration of defects. The low phase transition temperature together with non-magnetic matrix materials helps to reduce grain growth and agglomeration during annealing. Small remanence ratio and coercive squareness for nanocomposite thin films annealed at 300 °C to fct phase confirm that the main intergranular interaction is magnetostatic interaction rather than exchange coupling. The MT assisted PLD can synthesize fct-FePt : Al2O3 nanocomposite thin films with reduced intergranular exchange coupling.

  13. Structure Evolution and Electric Properties of TaN Films Deposited on Al2O3-BASED Ceramic and Glass Substrates by Magnetron Reactive Sputtering

    NASA Astrophysics Data System (ADS)

    Zhou, Yan Ming; Ma, Yang Zhao; Xie, Zhong; He, Ming Zhi

    2014-03-01

    Structure evolution and electric properties of tantalum nitride (TaN) films deposited on Al2O3-based ceramic and glass substrates by magnetron reactive sputtering were carried out as a function of the N2-to-Ar flow ratio. The TaN thin films on Al2O3-based ceramic substrates grow with micronclusters composed of numerous nanocrystallites, contains from single-phase of Ta2N grains to TaN, and exhibits high defect density, sheet resistance and negative TCR as the N2-to-Ar flow ratio continuously increases. However, the films on the glass substrates grow in the way of sandwich close-stack, contains from single-phase of Ta2N grains to TaN and Ta3N5 phases with the increase of N2-to-Ar flow ratio. These results indicate that the N2-to-Ar flow ratio and surface characteristic difference of substrates play a dominant effect on the structure and composition of the TaN films, resulting in different electrical properties for the films on Al2O3-based ceramic and the samples on glass substrates.

  14. Influences of annealing on structural and compositional properties of Al2O3 thin films grown on 4H-SiC by atomic layer deposition

    NASA Astrophysics Data System (ADS)

    Tian, Li-Xin; Zhang, Feng; Shen, Zhan-Wei; Yan, Guo-Guo; Liu, Xing-Fang; Zhao, Wan-Shun; Wang, Lei; Sun, Guo-Sheng; Zeng, Yi-Ping

    2016-12-01

    Annealing effects on structural and compositional performances of Al2O3 thin films on 4H-SiC substrates are studied comprehensively. The Al2O3 films are grown by atomic layer deposition through using trimethylaluminum and H2O as precursors at 300 °C, and annealed at various temperatures in ambient N2 for 1 min. The Al2O3 film transits from amorphous phase to crystalline phase as annealing temperature increases from 750 °C to 768 °C. The refractive index increases with annealing temperature rising, which indicates that densification occurs during annealing. The densification and grain formation of the film upon annealing are due to crystallization which is relative with second-nearest-neighbor coordination variation according to the x-ray photoelectron spectroscopy (XPS). Although the binding energies of Al 2p and O 1s increase together during crystallization, separations between Al 2p and O 1s are identical between as-deposited and annealed sample, which suggests that the nearest-neighbour coordination is similar. Project supported by the National Basic Research Program of China (Grant No. 2015CB759600), the National Natural Science Foundation of China (Grant Nos. 61474113, 61574140, and 61274007), and the Beijing Nova Program, China (Grant No. xx2016071), and the CAEP Microsystem and THz Science and Technology Foundation (Grant No. CAEPMT201502).

  15. Josephson effect in Nb/Al2O3/Al/MgB2 large-area thin-film heterostructures

    NASA Astrophysics Data System (ADS)

    Carapella, G.; Martucciello, N.; Costabile, G.; Ferdeghini, C.; Ferrando, V.; Grassano, G.

    2002-04-01

    We report the demonstration of dc and ac Josephson effects in Nb/Al2O3/Al/MgB2 thin-film heterostructure. The heterostructure exhibits moderately hysteretic current-voltage characteristic with a dc Josephson current branch and regular microwave-induced Shapiro steps. From conductance spectrum, a gap of about 2 meV at 7.7 K is estimated for the proximized surface of MgB2 electrode.

  16. Distribution of Oxygen Vacancies and Gadolinium Dopants in ZrO2-CeO2 Multi-Layer Films Grown on α-Al2O3

    SciTech Connect

    Wang, Chong M.; Engelhard, Mark H.; Azad, Samina; Saraf, Laxmikant V.; McCready, David E.; Shutthanandan, V.; Yu, Zhongqing; Thevuthasan, Suntharampillai; Watanabe, M.; Williams, D. B.

    2006-06-15

    Gd-doped ZrO2 and CeO2 multi-layer films were deposited on α-Al2O3 (0001) using oxygen plasma assisted molecular beam epitaxy. Oxygen vacancies and Gd dopant distributions were investigated in these multi-layer films using x-ray diffraction (XRD), conventional and high-resolution transmission electron microscopy (HRTEM), annular dark-filed imaging in scanning transmission electron microscopy (STEM), energy dispersive x-ray spectroscopy (EDS) elemental mapping and x-ray photoelectron spectroscopy (XPS) depth profiling. EDS and XPS reveal that Gd concentration in the ZrO2 layer is lower than that in the CeO2 layer. As a result, higher oxygen vacancy concentration exists in CeO2 layers compared to that in ZrO2 layers. In addition, Gd is found to segregate only at the interfaces formed during the deposition of CeO2 layers on ZrO2 layers. On the other hand, the interfaces formed during the deposition of ZrO2 layers on CeO2 layers did not show any Gd segregation. The Gd segregation behavior at the every other interface is believed to be associated with the low solubility of Gd in ZrO2.

  17. In-situ hybrid study of thermal behaviour of Znsbnd Ni and Znsbnd Nisbnd Al2O3 nanocrystallite thin films induced TEA/MEA by electrocodeposition

    NASA Astrophysics Data System (ADS)

    Abdulwahab, M.; Fayomi, O. S. I.; Popoola, A. P. I.; Dodo, M. R.

    Our present investigation focuses on the thermal stability of already developed electroforms of Znsbnd Ni and Znsbnd Nisbnd Al2O3 thin films induced with triethylamine (TEA) and monoethylamine (MEA) as surfactant by electrocodeposition on mild steel substrate with the aim to re-examine its micro-hardness and degradation behaviour in static sodium chloride solution. In the event, the samples were thermally treated at 200 °C and air cooled. The results obtained showed that the developed composites are thermally stable with hardness value of the Znsbnd Nisbnd Al2O3 coated; 185 Hv increased to 190.5 Hv indicating a 2.89% improvement. Noticeably, in the Znsbnd Ni coatings, a decrease in the hardness with 26.67% was observed. The oxidation resistance was however favored for both composites.

  18. Comparison of the microstructure and magnetic properties of strontium hexaferrite films deposited on Al2O3(0001), Si(100)/Pt(111) and Si(100) substrates by pulsed laser technique

    NASA Astrophysics Data System (ADS)

    Masoudpanah, S. M.; Seyyed Ebrahimi, S. A.; Ong, C. K.

    2014-01-01

    Strontium hexaferrite SrFe12O19 (SrM) films have been deposited on Al2O3(0001), Si(100)/Pt(111) and Si(100) substrates. The (001) oriented SrFe12O19 films deposited on the Al2O3(0001) and Si(100)/Pt(111) substrates have been confirmed by X-ray diffraction patterns. Higher coercivity in perpendicular direction rather than in-plane direction of the SrM/Al2O3(0001) and SrM/Pt(111) films showed that the films had perpendicular magnetic anisotropy. The (001) orientation and similar microstructure and magnetic properties of the SrM/Al2O3(0001) and SrM/Pt(111) films show the Al2O3(0001) substrate can be replaced by the Si(100)/Pt(111) substrate.

  19. In situ study on the thermal stability and interfaces properties of Er2O3/Al2O3/Si multi stacked films by X-ray photoelectron spectroscopy

    NASA Astrophysics Data System (ADS)

    Gao, Baolong; Mamat, Mamatrishat; Ghupur, Yasenjan; Ablat, Abduleziz; Ibrahim, Kurash; Wang, Jiaou; Liu, Chen; Zhao, Jiali

    2017-04-01

    Ultrathin high-k dielectric films with Er2O3/Al2O3/Si structure were fabricated by the pulsed laser deposition (PLD) technique. The samples were annealed in O2 ambient at the various temperatures. The interface reaction, and as well as the thermal stability between Si substrate and Er2O3 layer were studied in situ using X-ray photoelectron spectroscopy (XPS). The Film thickness was measured with scanning electron microscope (SEM). The experimental results indicate that the thickness of the silicate layer lessening at the interface with increasing of the thickness of Al2O3, and the production of the SiOx and the silicide is more easily formed than Er-silicate after annealing at the lower temperature because of the similarity of the structure and the small lattice mismatch.

  20. Preparation and characterization of super-water-repellent Al2O3 coating films with high transparency

    NASA Astrophysics Data System (ADS)

    Minami, Tsutomu; Katata, Noriko; Tadanaga, Kiyoharu

    1997-10-01

    Alumina thin films with a roughness of 20 to 50 nm were formed by immersing the porous alumina gel films prepared by the sol- gel method in boiling water. When hydrolyzed fluoroalkyltrimethoxysilane was coated on the alumina films, the films showed super-water-repellency and high transparency; the contact angle for water of the film was 165 degrees and the transmittance for visible light was higher than 92%. When the fluoroalkyltrimethoxysilane-coated thin films were heat- treated at temperatures higher than 500 degrees Celsius, the films became super-hydrophilic; the contact angle for water on the films was less than 5 degrees. It was shown the existence of air in the pores on the surface caused the super-water- repellency and that of water in the pores caused the super- hydrophilic property. The transparent, super water-repellent and super-hydrophilic coating films formed on glasses, metals, and ceramics have practical applications such as optical lenses, eye-glasses, cover glasses for solar cells, windshields of automobiles, and so on.

  1. Microstructure of Al2O3 scales formed on NiCrAl alloys. Ph.D. Thesis - Case Western Reserve Univ.

    NASA Technical Reports Server (NTRS)

    Smialek, J. L.

    1981-01-01

    The structure of transient scales formed on pure and Y or Zr-doped Ni-15Cr-13Al alloys oxidized for 0.1 hr at 1100 C was studied by the use of transmission electron microscopy. Crystallographically oriented scales were found on all three alloys, but especially for the Zr-doped NiCrAl. The oriented scales consisted of alpha-(Al,Cr)2O3, Ni(Al,Cr)2O4 and gamma-Al2O3. They were often found in intimate contact with each other such that the close-packed planes and directions of one oxide phase were aligned with those of another. The prominent structural features of the oriented scales were approximately equal to micrometer subgrains; voids, antiphase domain boundaries and aligned precipitates were also prevalent. Randomly oriented alpha-Al2O3 was also found and was the only oxide ever observed at the immediate oxide metal interface. These approximately 0.15 micrometer grains were populated by intragranular voids which decreased in size and number towards the oxide metal interface. A sequence of oxidation was proposed in which the composition of the growing scale changed from oriented oxides rich in Ni and Cr to oriented oxides rich in Al. At the same time the structure changed from cubic spinels to hexagonal corundums with apparent precipitates of one phase in the matrix of the other. Eventually randomly oriented pure alpha-Al2O3 formed as the stable oxide with an abrupt transition: there was no gradual loss of orientation, no gradual compositional change or no gradual decrease in precipitate density.

  2. Thickness effect on the optical and morphological properties in Al2O3/ZnO nanolaminate thin films prepared by atomic layer deposition

    NASA Astrophysics Data System (ADS)

    López, J.; Martínez, J.; Abundiz, N.; Domínguez, D.; Murillo, E.; Castillón, F. F.; Machorro, R.; Farías, M. H.; Tiznado, H.

    2016-02-01

    In this work, we studied the optical and morphological properties of ultrathin nanolaminate films based on Al2O3/ZnO (AZ) bilayers stack. The films were deposited on Si (100) by means of thermal atomic layer deposition (ALD) technique. The bilayer thicknesses (ratio = 1:1) were 0.2, 1, 2, 4, 10 and 20 nm. Refractive index (n) and band gap (Eg) of each nanolaminate were studied via spectroscopic ellipsometry (SE), and spectral reflectance ultraviolet-visible spectroscopy (UV-vis). Surface morphology and roughness parameters of the nanolaminates were measured by Atomic Force Microscopy (AFM). The optical and morphological properties were shown highly dependent on the bilayer thickness. Ellipsometric data treated through the Cody-Lorentz optical model revealed that the refractive index decreases for thinner bilayers. A sharp intensity decay of refractive index and peaks at the UV region (200-400 nm) indicated increased transparency for thinner bilayers. It is also shown that the band gap is tunable. The maximum band gap value was 4.8 eV. These results reveal that ZnO combined with Al2O3 as bilayers stack can be converted into a dielectric material with enhanced band gap, opening the possibility for new optical and dielectric applications.

  3. TEM study of defect structure of GaN epitaxial films grown on GaN/Al2O3 substrates with buried column pattern

    NASA Astrophysics Data System (ADS)

    Mynbaeva, M. G.; Kremleva, A. V.; Kirilenko, D. A.; Sitnikova, A. A.; Pechnikov, A. I.; Mynbaev, K. D.; Nikolaev, V. I.; Bougrov, V. E.; Lipsanen, H.; Romanov, A. E.

    2016-07-01

    A TEM study of defect structure of GaN films grown by chloride vapor-phase epitaxy (HVPE) on GaN/Al2O3 substrates was performed. The substrates were fabricated by metal-organic chemical vapor deposition overgrowth of templates with buried column pattern. The results of TEM study showed that the character of the defect structure of HVPE-grown films was determined by the configuration of the column pattern in the substrate. By choosing the proper pattern, the reduction in the density of threading dislocations in the films by two orders of magnitude (in respect to the substrate material), down to the value of 107 cm-2, was achieved.

  4. Fabrication and characterization of highly luminescent Er3+:Al2O3 thin films with optimized growth parameters

    NASA Astrophysics Data System (ADS)

    Nayar, Priyanka; Zhu, Xue-Yi; Yang, Fuyi; Lu, Minghui; Lakshminarayana, G.; Liu, Xiao Ping; Chen, Yan-Feng; Kityk, I. V.

    2016-10-01

    Erbium doped amorphous alumina thin films were fabricated using Co-sputtering technique in various depositions runs with varying parameters for optimizing the deposition parameters to obtain the films with best optical performance. The main subject of investigation includes the effects of change in various deposition parameters such as substrate heating, radio frequency (RF) power and oxygen pressure inside the chamber while deposition. High quality as-deposited films with various Er concentrations and low carbon content have been confirmed by XPS. Substrate heating ∼500 °C was found to be very effective in getting highly dense films with high refractive index of 1.70 at 1530-1570 nm emission band. The Er3+-doped films showed very intense near-infrared luminescence peak at 1550 nm even without any post-deposition annealing treatment.

  5. Thermoluminescent response of C-modified Al2O3 thin films deposited by parallel laser ablation plasmas

    NASA Astrophysics Data System (ADS)

    Garcés, J.; Escobar-Alarcón, L.; Gonzalez-Martinez, P. R.; Solís-Casados, D. A.; Romero, S.; Gonzalez-ZAvala, F.; Haro-Poniatowski, E.

    2017-01-01

    Aluminium oxide thin films modified with different amounts of carbon were prepared using a parallel laser ablation plasmas configuration. The effect of the amount of carbon incorporated in the films on their compositional, morphological, structural, and thermoluminescent properties was studied. The results showed that films with different C content, from 11 to 33 at. %, were obtained. The structural characterization revealed the growth of an amorphous material. Surface morphology of the obtained thin films showed smooth surfaces. The films were exposed to UV and gamma radiation (Co-60) in order to study their thermoluminescence response. The results tend to indicate that carbon incorporation into the alumina favours the increase of a high temperature TL peak.

  6. The process of growing Cr2O3 thin films on α-Al2O3 substrates at low temperature by r.f. magnetron sputtering

    NASA Astrophysics Data System (ADS)

    Gao, Yin; Leiste, Harald; Stueber, Michael; Ulrich, Sven

    2017-01-01

    Cr2O3 thin films with a thickness of 180 nm are grown on c-plane α-Al2O3 (0001) single crystal substrates at a substrate temperature of 320 °C by non-reactive radio frequency magnetron sputtering. Phase formation and composition are characterized by X-ray diffraction (XRD) and Raman spectroscopy analysis. Additional information such as in-plane and out-of-plane lattice parameters, strain relaxation and texture are obtained by reciprocal space mappings (RSMs) and pole figure measurements. Transmission electron microscopy (TEM) has been carried out in order to study the microstructure and further confirm the orientation and epitaxial relationship between films and substrates.

  7. Morphological and optical properties of sol-gel derived 6SrO·6BaO·7Al 2O 3 thin films

    NASA Astrophysics Data System (ADS)

    Chavhan, P. M.; Sharma, Anubha; Sharma, R. K.; Kaushik, N. K.

    2010-01-01

    A novel 6SrO·6BaO·7Al 2O 3 (S6B6A7) thin film deposited onto soda lime float glass via sol-gel dip coating technique is reported. The morphological and compositional properties of the S6B6A7 thin films have been investigated using scanning electron microscopy (SEM), atomic force microscopy (AFM) and X-ray photoelectron spectroscopy (XPS) revealing that the films were composed of S6B6A7 nanoparticles. The optical properties of the S6B6A7 films are affected by sol concentration, film thickness and annealing temperature as revealed by UV-vis transmittance. The transparency of S6B6A7 films improved on increasing annealing temperature up to 450 °C in air. The S6B6A7 films prepared using 2, 5, and 8 (wt.%) sols and annealed at 450 °C exhibit an average transmittance of over ˜91% in wide visible range.

  8. Alternative Dielectric Films for rf MEMS Capacitive Switches Deposited using Atomic Layer Deposited Al2O3/ZnO Alloys

    DTIC Science & Technology

    2006-07-02

    switches deposited using atomic layer deposited Al2O3/ZnO alloys Cari F. Herrmann a,b, Frank W. DelRio a, David C. Miller a, Steven M. George b,c, Victor...The layer is an alloy mixture of Al2O3 and ZnO and is proposed for use as charge dissipative layers in which the dielectric onstant is significant...investigates Al2O3/ZnO ALD alloys deposited at 100 and 177 ◦C and compares their material properties. Auger electron pectroscopy was used to determine the

  9. Evaluation of the optoelectronic properties and corrosion behavior of Al2O3-doped ZnO films prepared by dc pulsed magnetron sputtering

    NASA Astrophysics Data System (ADS)

    Zubizarreta, C.; Berasategui, E. G.; Bayón, R.; Escobar Galindo, R.; Barros, R.; Gaspar, D.; Nunes, D.; Calmeiro, T.; Martins, R.; Fortunato, E.; Barriga, J.

    2014-12-01

    The main requirements for transparent conducting oxide (TCO) films acting as electrodes are a high transmission rate in the visible spectral region and low resistivity. However, in many cases, tolerance to temperature and humidity exposure is also an important requirement to be fulfilled by the TCOs to assure proper operation and durability. Besides improving current encapsulation methods, the corrosion resistance of the developed TCOs must also be enhanced to warrant the performance of optoelectronic devices. In this paper the performance of aluminum-doped zinc oxide (AZO) films deposited by pulsed dc magnetron sputtering has been studied. Structure, optical transmittance/reflectance, electrical properties (resistivity, carrier concentration and mobility) and corrosion resistance of the developed coatings have been analyzed as a function of the doping of the target and the coating thickness. Films grown from a 2.0 wt% Al2O3 target with a thickness of approximately 1 µm showed a very low resistivity of 6.54  ×  10-4 Ωcm and a high optical transmittance in the visible range of 84%. Corrosion studies of the developed samples have shown very low corrosion currents (nanoamperes), very high corrosion resistances (in the order of 107 Ω) and very high electrochemical stability, indicating no tendency for electrochemical corrosion degradation.

  10. Assembly of self-assembled monolayer-coated Al2O3 on TiO2 thin films for the fabrication of renewable superhydrophobic-superhydrophilic structures.

    PubMed

    Nishimoto, Shunsuke; Sekine, Hitomi; Zhang, Xintong; Liu, Zhaoyue; Nakata, Kazuya; Murakami, Taketoshi; Koide, Yoshihiro; Fujishima, Akira

    2009-07-07

    A renewable superhydrophobic-superhydrophilic pattern with a minimum dimension of 50 microm is prepared from octadecyltrimethoxysilane self-assembled monolayer-covered superhydrophobic Al2O3 overlayers on a superhydrophilic TiO2 surface via self-assembly and calcination of boehmite (AlOOH.nH2O) particles. The resulting Al2O3 layer plays dual roles as a superhydrophobic layer and as a UV-blocking layer for the underlying TiO2.

  11. Structure, magnetic, and microwave properties of thick Ba-hexaferrite films epitaxially grown on GaN/Al2O3 substrates

    NASA Astrophysics Data System (ADS)

    Chen, Z.; Yang, A.; Mahalingam, K.; Averett, K. L.; Gao, J.; Brown, G. J.; Vittoria, C.; Harris, V. G.

    2010-06-01

    Thick barium hexaferrite [BaOṡ(Fe2O3)6] films, having the magnetoplumbite structure (i.e., Ba M), were epitaxially grown on c-axis oriented GaN/Al2O3 substrates by pulsed laser deposition followed by liquid phase epitaxy. X-ray diffraction showed (0,0,2n) crystallographic alignment with pole figure analyses confirming epitaxial growth. High resolution transmission electron microscopy images revealed magnetoplumbite unit cells stacked with limited interfacial mixing. Saturation magnetization, 4πMs, was measured for as-grown films to be 4.1±0.3 kG with a perpendicular magnetic anisotropy field of 16±0.3 kOe. Ferromagnetic resonance linewidth, the peak-to-peak power absorption derivative at 53 GHz, was 86 Oe. These properties will prove enabling for the integration of low loss Ba M ferrite microwave passive devices with active semiconductor circuit elements in systems-on-a-wafer architecture.

  12. Reduced impurities and improved electrical properties of atomic-layer-deposited HfO2 film grown at a low temperature (100 °C) by Al2O3 incorporation

    NASA Astrophysics Data System (ADS)

    Park, Tae Joo; Byun, Youngchol; Wallace, Robert M.; Kim, Jiyoung

    2016-05-01

    The HfO2 films grown by atomic layer deposition (ALD) at a low temperature (100 °C) necessarily has a large amount of residual impurities due to lack of thermal energy for stable ALD reactions such as ligand removal and oxidation, which degrades various properties. However, Al2O3 incorporation into the film significantly decreased the residual impurities despite of a low growth temperature. The decrease in C impurity is attributed to the reduced oxygen vacancies by the incorporated Al2O3 phase or the high reactivity of Al precursor. Consequently, the electronic band structure of the film, and thereby the electrical properties were improved significantly.

  13. Photoluminescence of Ga-doped ZnO film grown on c-Al2O3 (0001) by plasma-assisted molecular beam epitaxy

    NASA Astrophysics Data System (ADS)

    Park, H. C.; Byun, D.; Angadi, B.; Hee Park, D.; Choi, W. K.; Choi, J. W.; Jung, Y. S.

    2007-10-01

    High quality gallium doped ZnO (Ga:ZnO) thin films were grown on c-Al2O3(1000) by plasma-assisted molecular beam epitaxy, and Ga concentration NGa was controlled in the range of 1×1018-2.5×1020/cm3 by adjusting/changing the Ga cell temperature. From the low-temperature photoluminescence at 10K, the donor bound exciton I8 related to Ga impurity was clearly observed and confirmed by comparing the calculated activation energy of 16.8meV of the emission peak intensity with the known localization energy, 16.1meV. Observed asymmetric broadening with a long tail on the lower energy side in the photoluminescence (PL) emission line shape could be fitted by the Stark effect and the compensation ratio was approximately 14-17% at NGa⩾1×1020/cm3. The measured broadening of photoluminescence PL emission is in good agreement with the total thermal broadening and potential fluctuations caused by random distribution of impurity at NGa lower than the Mott critical density.

  14. Comparative Study of Al2O3 Optical Crystalline Thin Films Grown by Vapor Combinations of Al(CH3)3/N2O and Al(CH3)3/H2O2

    NASA Astrophysics Data System (ADS)

    Kumagai, Hiroshi; Toyoda, Koichi; Matsumoto, Masahiko; Obara, Minoru

    1993-12-01

    We compared the use of nitrous oxide (N2O) and hydrogen peroxide (H2O2) as the oxidant in digital chemical vapor deposition to obtain high-quality optical crystalline thin films of Al2O3. Optical constants and thicknesses of these films were investigated in terms of growth temperature, by using variable-angle spectroscopic ellipsometry.

  15. Effects of Al2O3 Nano-Particles on Corrosion Performance of Plasma Electrolytic Oxidation Coatings Formed on 6061 Aluminum Alloy

    NASA Astrophysics Data System (ADS)

    Vakili-Azghandi, Mojtaba; Fattah-alhosseini, Arash; Keshavarz, Mohsen K.

    2016-12-01

    Corrosion resistance improvement of plasma electrolyte oxidation coatings on 6061 aluminum alloy in silicate electrolyte containing Al2O3 nano-particles was studied, with particular emphasis on the microstructure, coating growth, and corrosion behavior in 3.5 wt.% NaCl solution. The microstructure of coatings, their thickness, and phase composition were characterized using scanning electron microscopy and x-ray diffraction. All characterization data showed that the maximum coating thickness and lowest amount of porosity were obtained in a low concentration of KOH, a high concentration of Na2SiO3, and moderate concentration of Al2O3 nano-particles in the electrolyte. This combination describes the optimum plasma electrolytic oxidation electrolyte, which has the best conductivity and oxidizing state, as well as the highest incorporation of electrolyte components in the coating growth process. On the other hand, incorporation and co-deposition of Al2O3 nano-particles were more pronounced than SiO3 2- ions in some level of molar concentration, which is due to the higher impact of electron discharge force on the adsorption of Al2O3 nano-particles. The electrochemical results showed that the best protective behavior was obtained in the sample having a coat with the lowest porosity and highest thickness.

  16. Temperature dependence of the dielectric response of anodized Al-Al2O3-metal capacitors

    NASA Astrophysics Data System (ADS)

    Hickmott, T. W.

    2003-03-01

    The temperature dependence of capacitance, CM, and conductance, GM, of Al-Al2O3-metal capacitors with Cu, Ag, and Au electrodes has been measured between 100 and 340 K at seven frequencies between 10 kHz and 1 MHz. Al2O3 films between 15 and 64 nm thick were formed by anodizing evaporated Al films in borate-glycol or borate-H2O electrolyte. The interface capacitance at the Al2O3-metal interface, CI, which is in series with the capacitance CD due to the Al2O3 dielectric, is determined from plots of 1/CM versus insulator thickness. CI is not fixed for a given metal-insulator interface but depends on the vacuum system used to deposit the metal electrode. CI is nearly temperature independent. When CI is taken into account the dielectric constant of Al2O3 determined from capacitance measurements is ˜8.3 at 295 K. The dielectric constant does not depend on anodizing electrolyte, insulator thickness, metal electrode, deposition conditions for the metal electrode or measurement frequency. By contrast, GM of Al-Al2O3-metal capacitors depends on both the deposition conditions of the metal and on the metal. For Al-Al2O3-Cu capacitors, GM is larger for capacitors with large values of 1/CI that result when Cu is evaporated in an oil-pumped vacuum system. For Al-Al2O3-Ag capacitors, GM does not depend on the Ag deposition conditions.

  17. Fabrication of Al matrix composite reinforced with submicrometer-sized Al2O3 particles formed by combustion reaction between HEMM Al and V2O5 composite particles during sintering

    NASA Astrophysics Data System (ADS)

    Woo, Kee Do; Kim, Jae Hwang; Kwon, Eui Pyo; Moon, Min Seok; Lee, Hyun Bom; Sato, Tatsuo; Liu, Zhiguang

    2010-04-01

    To fabricate an Al-V matrix composite reinforced with submicron-sized Al2O3 and AlxVy (Al3V, Al10V) phases, high energy mechanical milling (HEMM) and sintering were employed. By increasing the milling time, the size of mechanically milled powder was significantly reduced. In this study, the average powder size of 59 μm for Al, and 178 μm for V2O5 decreased with the formation of a new product, Al-Al2O3-AlxVy, with a size range from 1.3 μm to 2.6 μm formed by the in-situ combustion reaction during sintering of HEM milled Al and V2O5 composite powders. The in-situ reaction between Al and V2O5 during the HEMM and sintering transformed the Al2O3 and AlxVy (Al3V, Al10V) phases. Most of the reduced V reacted with excess the Al to form AlxVy (Al3V, Al10V) with very little V dissolved into Al matrix. By increasing the milling time and weight percentage of V2O5, the hardness of the Al-Al2O3-AlxVy composite sintered at 1173 K increased. The composite fabricated with the HEMM Al-20wt.%V2O5 composite powder and sintering at 1173 K for 2 h had the highest hardness.

  18. Silicon solar cells with Al2O3 antireflection coating

    NASA Astrophysics Data System (ADS)

    Dobrzański, Leszek; Szindler, Marek; Drygała, Aleksandra; Szindler, Magdalena

    2014-09-01

    The paper presents the possibility of using Al2O3 antireflection coatings deposited by atomic layer deposition ALD. The ALD method is based on alternate pulsing of the precursor gases and vapors onto the substrate surface and then chemisorption or surface reaction of the precursors. The reactor is purged with an inert gas between the precursor pulses. The Al2O3 thin film in structure of the finished solar cells can play the role of both antireflection and passivation layer which will simplify the process. For this research 50×50 mm monocrystalline silicon solar cells with one bus bar have been used. The metallic contacts were prepared by screen printing method and Al2O3 antireflection coating by ALD method. Results and their analysis allow to conclude that the Al2O3 antireflection coating deposited by ALD has a significant impact on the optoelectronic properties of the silicon solar cell. For about 80 nm of Al2O3 the best results were obtained in the wavelength range of 400 to 800 nm reducing the reflection to less than 1%. The difference in the solar cells efficiency between with and without antireflection coating was 5.28%. The LBIC scan measurements may indicate a positive influence of the thin film Al2O3 on the bulk passivation of the silicon.

  19. Thermal Stability of the Dynamic Magnetic Properties of FeSiAl-Al2O3 and FeSiAl-SiO2 Films Grown by Gradient-Composition Sputtering Technique

    NASA Astrophysics Data System (ADS)

    Zhong, Xiaoxi; Phuoc, Nguyen N.; Soh, Wee Tee; Ong, C. K.; Peng, Long; Li, Lezhong

    2017-01-01

    We carry out a systematic investigation of the dynamic magnetic properties of FeSiAl-Al2O3 and FeSiAl-SiO2 thin films prepared by gradient-composition deposition technique with respect to temperature in the range of 300 K to 420 K. It was found that the magnetic anisotropy field ( H K) and ferromagnetic resonance frequency ( f FMR) are increased with increasing deposition angle ( β) due to the enhancement of stress ( σ) when concentrations of Al and O or Si and O are increased. The thermal stability of FeSiAl-Al2O3 films show a very interesting behavior with the magnetic anisotropy increasing with temperature when the deposition angle is increased. In contrast, when the deposition angle is lower, the usual trend of decreasing magnetic anisotropy with increasing temperature is observed. Moreover, the temperature-dependent behaviors of the dynamic permeability and effective Gilbert damping coefficient ( α eff) for FeSiAl-Al2O3 and FeSiAl-SiO2 films at different deposition angles are discussed in detail.

  20. Atomic layer deposition of high-density Pt nanodots on Al2O3 film using (MeCp)Pt(Me)3 and O2 precursors for nonvolatile memory applications

    PubMed Central

    2013-01-01

    Pt nanodots have been grown on Al2O3 film via atomic layer deposition (ALD) using (MeCp)Pt(Me)3 and O2 precursors. Influence of the substrate temperature, pulse time of (MeCp)Pt(Me)3, and deposition cycles on ALD Pt has been studied comprehensively by scanning electron microscopy, transmission electron microscopy, and X-ray photoelectron spectroscopy. Therefore, Pt nanodots with a high density of approximately 2 × 1012 cm-2 have been achieved under optimized conditions: 300°C substrate temperature, 1 s pulse time of (MeCp)Pt(Me)3, and 70 deposition cycles. Further, metal-oxide-semiconductor capacitors with Pt nanodots embedded in ALD Al2O3 dielectric have been fabricated and characterized electrically, indicating noticeable electron trapping capacity, efficient programmable and erasable characteristics, and good charge retention. PMID:23413837

  1. Epitaxial Graphene Surface Preparation for Atomic Layer Deposition of Al2O3

    DTIC Science & Technology

    2011-06-01

    j dielectrics such as Al2O3 , HfO2, Ta2O5, and TiO2 , are important for the realization of graphene-based top-gated electronic devices including field... ALD pulse sequencing of NO2-trimethylaluminum (TMA); 16 oxidation of electron beam evaporated metallic Al, Hf, Ti, Ta;17,18 and spin- coating of a... ALD of Al2O3 films in promoting uni- form, high quality oxide deposition. Initial treatments resulted in partial coverage, while the optimized treatment

  2. Interface of atomic layer deposited Al2O3 on H-terminated silicon

    NASA Astrophysics Data System (ADS)

    Gao, K. Y.; Speck, F.; Emtsev, K.; Seyller, Th.; Ley, L.; Oswald, M.; Hansch, W.

    2006-07-01

    Al2O3 films 1 to 20 nm thick were deposited as alternative high- gate dielectric on hydrogen-terminated silicon by Atomic Layer Deposition (ALD) and characterized by Synchrotron X-ray Photoelectron Spec-troscopy (SXPS), Fourier Transform Infrared (FTIR) absorption spectroscopy and admittance measure-ments. The SXPS results indicate that about 60% of the original Si-H surface bonds are preserved at the Al2O3/Si interface and this is confirmed by monitoring the Si-H stretching modes by FTIR spectroscopy in the Attenuated Total Reflection (ATR) mode both before and after ALD of Al2O3. The remaining 40% of Si-H bonds are replaced by Si-O bonds as verified by SXPS. In addition, a fraction of a monolayer of SiO2 forms on top of the Al2O3 dielectric during deposition. The presence of OH-groups at a level of 3% of the total oxygen content was detected throughout the Al2O3 layer through a chemically shifted O 1s component in SXPS. Admittance measurements give a dielectric constant of 9.12, but a relatively high density of interface traps between 1011 and 1012 cm-2 eV-1.

  3. Protection of Polymer from Atomic-Oxygen Erosion using Al2O3 Atomic Layer Deposition Coatings

    DTIC Science & Technology

    2008-01-01

    coatings other than Al2O3 . Multilayer ALD films of Al2O3 / TiO2 or Al2O3 / ZnO could protect against both O atoms and... Al2O3 growth. The steady-state Al2O3 ALD growth rate after nucleation is ∼1.2 Å per AB cycle [19,26]. The polyimide substrates were coated with Al2O3 ALD ...apparatus is shown in Fig. 1. This apparatus has Fig. 2. Mass change of polyimide substrates coated with varying numbers of Al2O3 ALD AB cycles

  4. Uniform Atomic Layer Deposition of Al2O3 on Graphene by Reversible Hydrogen Plasma Functionalization

    PubMed Central

    2017-01-01

    A novel method to form ultrathin, uniform Al2O3 layers on graphene using reversible hydrogen plasma functionalization followed by atomic layer deposition (ALD) is presented. ALD on pristine graphene is known to be a challenge due to the absence of dangling bonds, leading to nonuniform film coverage. We show that hydrogen plasma functionalization of graphene leads to uniform ALD of closed Al2O3 films down to 8 nm in thickness. Hall measurements and Raman spectroscopy reveal that the hydrogen plasma functionalization is reversible upon Al2O3 ALD and subsequent annealing at 400 °C and in this way does not deteriorate the graphene’s charge carrier mobility. This is in contrast with oxygen plasma functionalization, which can lead to a uniform 5 nm thick closed film, but which is not reversible and leads to a reduction of the charge carrier mobility. Density functional theory (DFT) calculations attribute the uniform growth on both H2 and O2 plasma functionalized graphene to the enhanced adsorption of trimethylaluminum (TMA) on these surfaces. A DFT analysis of the possible reaction pathways for TMA precursor adsorption on hydrogenated graphene predicts a binding mechanism that cleans off the hydrogen functionalities from the surface, which explains the observed reversibility of the hydrogen plasma functionalization upon Al2O3 ALD.

  5. Nanostructured Er3+-doped SiO2-TiO2 and SiO2-TiO2-Al2O3 sol-gel thin films for integrated optics

    NASA Astrophysics Data System (ADS)

    Predoana, Luminita; Preda, Silviu; Anastasescu, Mihai; Stoica, Mihai; Voicescu, Mariana; Munteanu, Cornel; Tomescu, Roxana; Cristea, Dana

    2015-08-01

    The nanostructured multilayer silica-titania or silica-titania-alumina films doped with Er3+ were prepared by sol-gel method. The sol-gel method is a flexible and convenient way to prepare oxide films on several types of substrates, and for this reason it was extensively investigated for optical waveguides fabrication. The selected molar composition was 90%SiO2-10%TiO2 or 85%SiO2-10%TiO2-5% Al2O3 and 0.5% Er2O3. The films were characterized by Scanning Electron Microscopy (SEM), X-ray diffraction (XRD), Spectroellipsometry (SE), as well as by Atomic Force Microscopy (AFM) and photoluminescence (PL). The films deposited on Si/SiO2 substrate by dip-coating or spin-coating, followed by annealing at 900 °C, presented homogenous and continuous surface and good adherence to the substrate. Differences were noticed in the structure and properties of the prepared films, depending on the composition and the number of deposited layers. Channel optical waveguides were obtained by patterning Er3+-doped SiO2-TiO2 and SiO2-TiO2-Al2O3 sol-gel layers deposited on oxidized silicon wafers.

  6. What determines the interfacial configuration of Nb/Al2O3 and Nb/MgO interface

    PubMed Central

    Du, J. L.; Fang, Y.; Fu, E. G.; Ding, X.; Yu, K. Y.; Wang, Y. G.; Wang, Y. Q.; Baldwin, J. K.; Wang, P. P.; Bai, Q.

    2016-01-01

    Nb films are deposited on single crystal Al2O3 (110) and MgO(111) substrates by e-beam evaporation technique. Structure of Nb films and orientation relationships (ORs) of Nb/Al2O3 and Nb/MgO interface are studied and compared by the combination of experiments and simulations. The experiments show that the Nb films obtain strong (110) texture, and the Nb film on Al2O3(110) substrate shows a higher crystalline quality than that on MgO(111) substrate. First principle calculations show that both the lattice mismatch and the strength of interface bonding play major roles in determining the crystalline perfection of Nb films and ORs between Nb films and single crystal ceramic substrates. The fundamental mechanisms for forming the interfacial configuration in terms of the lattice mismatch and the strength of interface bonding are discussed. PMID:27698458

  7. Role of Ge and Si substrates in higher-k tetragonal phase formation and interfacial properties in cyclical atomic layer deposition-anneal Hf1-xZrxO2/Al2O3 thin film stacks

    NASA Astrophysics Data System (ADS)

    Dey, Sonal; Tapily, Kandabara; Consiglio, Steven; Clark, Robert D.; Wajda, Cory S.; Leusink, Gert J.; Woll, Arthur R.; Diebold, Alain C.

    2016-09-01

    Using a five-step atomic layer deposition (ALD)-anneal (DADA) process, with 20 ALD cycles of metalorganic precursors followed by 40 s of rapid thermal annealing at 1073 K, we have developed highly crystalline Hf1-xZrxO2 (0 ≤ x ≤ 1) thin films (<7 nm) on ˜1 nm ALD Al2O3 passivated Ge and Si substrates for applications in higher-k dielectric metal oxide semiconductor field effect transistors below 10 nm technology node. By applying synchrotron grazing incidence x-ray d-spacing maps, x-ray photoelectron spectroscopy (XPS), and angle-resolved XPS, we have identified a monoclinic to tetragonal phase transition with increasing ZrO2 content, elucidated the role of the Ge vs Si substrates in complete tetragonal phase formation (CTPF), and determined the interfacial characteristics of these technologically relevant films. The ZrO2 concentration required for CTPF is lower on Ge than on Si substrates (x ˜ 0.5 vs. x ˜ 0.86), which we attribute as arising from the growth of an ultra-thin layer of metal germanates between the Hf1-xZrxO2 and Al2O3/Ge, possibly during the first deposition and annealing cycle. Due to Ge-induced tetragonal phase stabilization, the interfacial metal germanates could act as a template for the subsequent preferential growth of the tetragonal Hf1-xZrxO2 phase following bottom-up crystallization during the DADA ALD process. We surmise that the interfacial metal germanate layer also function as a diffusion barrier limiting excessive Ge uptake into the dielectric film. An ALD Al2O3 passivation layer of thickness ≥1.5 nm is required to minimize Ge diffusion for developing highly conformal and textured HfO2 based higher-k dielectrics on Ge substrates using the DADA ALD process.

  8. Effect of interface on epitaxy and magnetism in h-RFeO3/Fe3O4/Al2O3 films (R  =  Lu, Yb).

    PubMed

    Zhang, Xiaozhe; Yin, Yuewei; Yang, Sen; Yang, Zhimao; Xu, Xiaoshan

    2017-04-26

    We have carried out the growth of h-RFeO3 (0 0 1) (R  =  Lu, Yb) thin films on Fe3O4 (1 1 1)/Al2O3 (0 0 1) substrates, and studied the effect of the h-RFeO3 (0 0 1)/Fe3O4 (1 1 1) interfaces on the epitaxy and magnetism. The observed epitaxial relations between h-RFeO3 and Fe3O4 indicate an unusual matching of Fe sub-lattices rather than a matching of O sub-lattices. The out-of-plane direction was found to be the easy magnetic axis for h-YbFeO3 (0 0 1) but the hard axis for Fe3O4 (1 1 1) in the h-YbFeO3 (0 0 1)/Fe3O4 (1 1 1)/Al2O3 (0 0 1) films, suggesting a perpendicular magnetic alignment at the h-YbFeO3 (0 0 1)/Fe3O4 (1 1 1) interface. These results indicate that Fe3O4 (1 1 1)/Al2O3 (0 0 1) could be a promising substrate for epitaxial growth of h-RFeO3 films of well-defined interface and for exploiting their spintronic properties.

  9. Effect of interface on epitaxy and magnetism in h-RFeO3/Fe3O4/Al2O3 films (R  =  Lu, Yb)

    NASA Astrophysics Data System (ADS)

    Zhang, Xiaozhe; Yin, Yuewei; Yang, Sen; Yang, Zhimao; Xu, Xiaoshan

    2017-04-01

    We have carried out the growth of h-RFeO3 (0 0 1) (R  =  Lu, Yb) thin films on Fe3O4 (1 1 1)/Al2O3 (0 0 1) substrates, and studied the effect of the h-RFeO3 (0 0 1)/Fe3O4 (1 1 1) interfaces on the epitaxy and magnetism. The observed epitaxial relations between h-RFeO3 and Fe3O4 indicate an unusual matching of Fe sub-lattices rather than a matching of O sub-lattices. The out-of-plane direction was found to be the easy magnetic axis for h-YbFeO3 (0 0 1) but the hard axis for Fe3O4 (1 1 1) in the h-YbFeO3 (0 0 1)/Fe3O4 (1 1 1)/Al2O3 (0 0 1) films, suggesting a perpendicular magnetic alignment at the h-YbFeO3 (0 0 1)/Fe3O4 (1 1 1) interface. These results indicate that Fe3O4 (1 1 1)/Al2O3 (0 0 1) could be a promising substrate for epitaxial growth of h-RFeO3 films of well-defined interface and for exploiting their spintronic properties.

  10. Structural study of radiolytic catalysts Ni-Ce/Al2O3 and Ni-Pt/Al2O3

    NASA Astrophysics Data System (ADS)

    Seridi, F.; Chettibi, S.; Keghouche, N.; Beaunier, P.; Belloni, J.

    2017-01-01

    Ni-Ce and Ni-Pt bimetallic catalysts supported over α-Al2O3 are synthesized by using co-impregnation method, and then reduced, each via radiolytic process or thermal H2-treatment. For Ni-Ce/Al2O3, the structural study reveals that Ce is alloyed with Ni as Ce2Ni7 nanoparticles in the radiation-reduced catalysts, while it segregates to the surface in the form of CeO2 in the H2-reduced catalysts. For Ni-Pt/Al2O3 radiolytic catalysts, Ni, Pt, NiPt and Ni3Pt nanoparticles, which size is 3.5 nm, are observed. When the radiation-reduced samples are tested in the benzene hydrogenation, they both display high conversion rate. However, the Ni-Pt/Al2O3 is more efficient than Ni-Ce/Al2O3. The performance of the catalysts is correlated with the high dispersion of the metal and the presence of intermetallic Ni-Pt and Ni-Ce phases. It is compared to that of other radiolytic monometallic/oxide catalysts of the literature.

  11. Influence of the Al2O3 partial-monolayer number on the crystallization mechanism of TiO2 in ALD TiO2/Al2O3 nanolaminates and its impact on the material properties

    NASA Astrophysics Data System (ADS)

    Testoni, G. E.; Chiappim, W.; Pessoa, R. S.; Fraga, M. A.; Miyakawa, W.; Sakane, K. K.; Galvão, N. K. A. M.; Vieira, L.; Maciel, H. S.

    2016-09-01

    TiO2/Al2O3 nanolaminates are being investigated to obtain unique materials with chemical, physical, optical, electrical and mechanical properties for a broad range of applications that include electronic and energy storage devices. Here, we discuss the properties of TiO2/Al2O3 nanolaminate structures constructed on silicon (1 0 0) and glass substrates using atomic layer deposition (ALD) by alternatively depositing a TiO2 sublayer and Al2O3 partial-monolayer using TTIP-H2O and TMA-H2O precursors, respectively. The Al2O3 is formed by a single TMA-H2O cycle, so it is a partial-monolayer because of steric hindrance of the precursors, while the TiO2 sublayer is formed by several TTIP-H2O cycles. Overall, each nanolaminate incorporates a certain number of Al2O3 partial-monolayers with this number varying from 10-90 in the TiO2/Al2O3 nanolaminate grown during 2700 total reaction cycles of TiO2 at a temperature of 250 °C. The fundamental properties of the TiO2/Al2O3 nanolaminates, namely film thickness, chemical composition, microstructure and morphology were examined in order to better understand the influence of the number of Al2O3 partial-monolayers on the crystallization mechanism of TiO2. In addition, some optical, electrical and mechanical properties were determined and correlated with fundamental characteristics. The results show clearly the effect of Al2O3 partial-monolayers as an internal barrier, which promotes structural inhomogeneity in the film and influences the fundamental properties of the nanolaminate. These properties are correlated with gas phase analysis that evidenced the poisoning effect of trimethylaluminum (TMA) pulse during the TiO2 layer growth, perturbing the growth per cycle and consequently the overall film thickness. It was shown that the changes in the fundamental properties of TiO2/Al2O3 nanolaminates had little influence on optical properties such as band gap and transmittance. However, in contrast, electrical properties as resistivity

  12. Study of ZrO2/Al2O3/ZrO2 and Al2O3/ZrO2/Al2O3 stack structures deposited by sol-gel method on Si

    NASA Astrophysics Data System (ADS)

    Vitanov, P.; Harizanova, A.; Ivanova, T.; Dimitrova, T.

    2010-02-01

    Based on our previous experience with pseudobinary alloys of (Al2O3)x(ZrO2)1-x as high-k materials and passivating coatings for solar cells, stack systems of ZrO2/Al2O3/ZrO2and Al2O3/ZrO2/Al2O3, deposited by simple and low cost sol-gel technology have been studied. The thin films of ZrO2 and Al2O3 were sequentially obtained on Si substrates including spin coating deposition from stable solutions. High resolution scanning electron microscopy (HRSEM) was used to compare the morphology of the nanolaminates. The layers were optically characterized by UV-VIS spectrophotometry. The electrical measurements were carried out on metal-insulator-semiconductor (MIS) structures. Their leakage current and relative permittivity were determined.

  13. Copper pillar and memory characteristics using Al2O3 switching material for 3D architecture

    PubMed Central

    2014-01-01

    A novel idea by using copper (Cu) pillar is proposed in this study, which can replace the through-silicon-vias (TSV) technique in future three-dimensional (3D) architecture. The Cu pillar formation under external bias in an Al/Cu/Al2O3/TiN structure is simple and low cost. The Cu pillar is formed in the Al2O3 film under a small operation voltage of <5 V and a high-current-carrying conductor of >70 mA is obtained. More than 100 devices have shown tight distribution of the Cu pillars in Al2O3 film for high current compliance (CC) of 70 mA. Robust read pulse endurances of >106 cycles are observed with read voltages of −1, 1, and 4 V. However, read endurance is failed with read voltages of −1.5, −2, and −4 V. By decreasing negative read voltage, the read endurance is getting worst, which is owing to ruptured Cu pillar. Surface roughness and TiO x N y on TiN bottom electrode are observed by atomic force microscope and transmission electron microscope, respectively. The Al/Cu/Al2O3/TiN memory device shows good bipolar resistive switching behavior at a CC of 500 μA under small operating voltage of ±1 V and good data retention characteristics of >103 s with acceptable resistance ratio of >10 is also obtained. This suggests that high-current operation will help to form Cu pillar and lower-current operation will have bipolar resistive switching memory. Therefore, this new Cu/Al2O3/TiN structure will be benefited for 3D architecture in the future. PMID:25136279

  14. Characterization of 12CaO x 7Al2O3 doped indium tin oxide films for transparent cathode in top-emission organic light-emitting diodes.

    PubMed

    Jung, Chul Ho; Hwang, In Rok; Park, Bae Ho; Yoon, Dae Ho

    2013-11-01

    12CaO x 7Al2O3, insulator (C12A7) doped indium tin oxide (ITO) (ITO:C12A7) films were fabricated using a radio frequency magnetron co-sputtering system with ITO and C12A7 targets. The qualitative and quantitative properties of ITO:C12A7 films, as a function of C12A7 concentration, were examined via X-ray photoemission spectroscopy and synchrotron X-ray scattering as well as by conducting atomic force microscopy. The work function of ITO:C12A7 (1.3%) films of approximately 2.8 eV obtained by high resolution photoemission spectroscopy measurements make them a reasonable cathode for top-emission organic light-emitting diodes.

  15. Al2O3 passivation effect in HfO2·Al2O3 laminate structures grown on InP substrates.

    PubMed

    Kang, Hang-Kyu; Kang, Yu-Seon; Kim, Dae-Kyoung; Baik, Min; Song, Jin Dong; An, Youngseo; Kim, Hyoungsub; Cho, Mann-Ho

    2017-04-07

    The passivation effect of an Al2O3 layer on electrical properties were investigated in HfO2--Al2O3 laminate structures grown on InP substrate by atomic layer deposition (ALD). The chemical state using HR-XPS showed that interfacial reactions were dependent on the presence of the Al2O3 passivation layer and its sequence in the HfO2--Al2O3 laminate structures. The Al2O3/HfO2/Al2O3 structure showed the best electrical characteristics, due to the interfacial reaction, compared with those of different stacking structures. The top Al2O3 layer suppressed the interdiffusion of oxidizing species into the HfO2 films, while the bottom Al2O3 layer blocked the outdiffusion of In and P atoms. As a result, the formation of In-O bonds was effectively suppressed in the Al2O3/HfO2/Al2O3/InP structure than that of HfO2-on-InP system. Moreover, conductance data revealed that the Al2O3/ layer on InP reduces the midgap traps to 2.6 × 10(12) eV(-1)cm(-2) (compared with that of HfO2/InP = 5.4 × 10(12) eV(-1)cm(-2)). The suppression of gap states caused by the outdiffusion of In atoms significantly controls the degradation of capacitors caused by leakage current through the stacked oxide layers.

  16. Thermal stability of surface and interface structure of atomic layer deposited Al2O3 on H-terminated silicon

    NASA Astrophysics Data System (ADS)

    Gao, K. Y.; Speck, F.; Emtsev, K.; Seyller, Th.; Ley, L.

    2007-11-01

    Using the atomic layer deposition technique, 1.2nm Al2O3 films were deposited as high-k gate dielectric layer on hydrogen-terminated silicon and annealed in vacuum and pure hydrogen in order to elucidate the effects of growth and annealing on the structure of film, interface, and surface. As analytical tools, high resolution core level spectroscopy using synchrotron radiation as variable photon source and Fourier Transform Infrared absorption spectroscopy in the attenuated total refraction mode were employed. For Al2O3 on H-terminated Si(111) and (100) surfaces the Si-H bonds are preserved at the interface, while Si-O-Al bonds provide the atomically abrupt interface between Al2O3 and Si. The chemical and structural integrity of the interface is maintained upon annealing except for a gradual loss of Si-H bonds. Growth of a SiO2 layer is observed after annealing, that is unambiguously located at the Al2O3 surface and not at the interface. Stress-induced emission of Si atoms from the interface is identified as the source of SiO2 based on a substantial broadening of the Si 2p core lines. A thermally induced reaction between Si and Al2O3 to form volatile SiO and Al2O is suggested to be responsible for the significant thickness reduction of Al2O3 that accompanies annealing at temperatures of 750°C. Conclusions for the likely effects of forming gas anneals on Al2O3/Si are drawn from this work.

  17. Microstructural characteristics of tin oxide-based thin films on (0001) Al2O3 substrates: effects of substrate temperature and RF power during co-sputtering.

    PubMed

    Hwang, Sooyeon; Lee, Ju Ho; Kim, Young Yi; Yun, Myeong Goo; Lee, Kwan-Hun; Lee, Jeong Yong; Cho, Hyung Koun

    2014-12-01

    While tin oxides such as SnO and SnO2 are widely used in various applications, surprisingly, only a limited number of reports have been presented on the microstructural characteristics of tin oxide thin films grown under various growth conditions. In this paper, the effects of the substrate temperature and content of foreign Zn ion on the microstructural characteristics of tin oxide thin films grown by radio-frequency magnetron sputtering were investigated. The increase in substrate temperature induced change in the stoichiometry of the thin films from SnO(1+x) to SnO(2-x). Additionally, the phase contrast in the transmission electron microscopy image revealed that SnO(1+x) and SnO(2-x) phases were alternating in thin films and the width of each phase became narrower at high substrate temperature. The ternary zinc tin oxide thin films were deposited using the co-sputtering method. As the ZnO target power increased, the crystallinity of the thin films became poly-crystalline, and then showed improved crystallinity again with two types of phases.

  18. Catalytic sterilization of Escherichia coli K 12 on Ag/Al2O3 surface.

    PubMed

    Chen, Meixue; Yan, Lizhu; He, Hong; Chang, Qingyun; Yu, Yunbo; Qu, Jiuhui

    2007-05-01

    Bactericidal action of Al(2)O(3), Ag/Al(2)O(3) and AgCl/Al(2)O(3) on pure culture of Escherichia coli K 12 was studied. Ag/Al(2)O(3) and AgCl/Al(2)O(3) demonstrated a stronger bactericidal activity than Al(2)O(3). The colony-forming ability of E. coli was completely lost in 0.5 min on both of Ag/Al(2)O(3) and AgCl/Al(2)O(3) at room temperature in air. The configuration of the bacteria on the catalyst surface was observed using scanning electron microscopy (SEM). Reactive oxygen species (ROS) play an important role in the expression of the bactericidal activity on the surface of catalysts by assay with O(2)/N(2) bubbling and scavenger for ROS. Furthermore, the formation of CO(2) as an oxidation product could be detected by diffuse reflectance infrared Fourier transform spectroscopy (DRIFTS) and be deduced by total carbon analysis. These results strongly support that the bactericidal process on the surface of Ag/Al(2)O(3) and AgCl/Al(2)O(3) was caused by the catalytic oxidation.

  19. High-Mobility Transparent SnO2 and ZnO-SnO2 Thin-Film Transistors with SiO2/Al2O3 Gate Insulators

    NASA Astrophysics Data System (ADS)

    Cheong, Woo-Seok; Yoon, Sung-Min; Hwang, Chi-Sun; Chu, Hye Yong

    2009-04-01

    Using a double-layered gate insulator [SiO2 (100 nm)/Al2O3 (10 nm)] and a dry-etching process for the channel layer, we could obtain high mobility top-gate SnO2 and ZnO-SnO2 (ZTO) transparent thin-film transistor (TTFT). After annealing at 300 °C, for 1 h in O2 ambient, the saturated mobility of SnO2 TTFT was 17.4 cm2 s-1 V-1, and that of ZTO TTFT was 50.4 cm2 s-1 V-1. Generally, both devices operated in the enhancement mode with a drain current on-off ratio of ˜106.

  20. Characterization of Coke on a Pt-Re/γ-Al 2 O 3 Re-Forming Catalyst: Experimental and Theoretical Study

    DOE PAGES

    Bare, Simon R.; Vila, F. D.; Charochak, Meghan E.; ...

    2017-01-09

    The characterization of coke on spent catalysts is key to understanding deactivation mechanisms in hydrocarbon transformations. Here, we report the comprehensive characterization (using laser Raman spectroscopy, 13C MAS NMR, temperature-programmed oxidation, XPS, and carbon K-edge NEXAFS) of coke on a series of spent Pt-Re re-forming catalysts as a function of time on stream and position in the catalytic bed. Laser Raman spectroscopy is shown to be rather insensitive to the carbon species present, while 13C MAS NMR finds that the carbon is present primarily as aromatic carbon. The TPO data are consistent with the coke being present on the aluminamore » support and not to a large extent covering the metallic Pt-Re nanoclusters, but the data do suggest the presence of more than one type of coke present. The carbon K-edge NEXAFS data, however, clearly differentiate the types of coke species present. In the more coked samples the features ascribed to graphite become more pronounced, together with an increase in the aromaticity, as judged by the intensity of the π* peak. With increasing amounts of carbon on the catalyst there is also a concomitant decrease in the σ* C–H peak, indicating that the carbon is becoming less hydrogenated. Furthermore, by using a linear combination of C NEXAFS spectra for n-hexane, benzene, and broadened highly oriented pyrolytic graphite (HOPG), we estimate the compositional change on the coke species, verifying the aliphatic to aromatic conversion. The data indicate that a good model for the deposited coke is that of highly defected, medium-sized rafts with a short-range polycyclic aromatic structure which have a variety of points of contact with the alumina surface, in particular with the O atoms. In agreement with the NMR, there is evidence for the C–O functionality from the presence of a shoulder in the C NEXAFS spectra that is ascribed, as a result of DFT calculations, to a 1s → π* transition of the carbon atoms bound to the

  1. Angular properties of pure and Ca-substituted YBa2Cu3O7-δ superconducting thin films grown on SrTiO3 and CeO2 buffered Al2O3 substrates

    NASA Astrophysics Data System (ADS)

    Augieri, A.; Celentano, G.; Ciontea, L.; Galluzzi, V.; Gambardella, U.; Halbritter, J.; Petrisor, T.; Rufoloni, A.; Vannozzi, A.

    2007-09-01

    In this work transport properties of superconducting 10 at.% Ca-substituted YBCO thin films grown on (1 0 0)-SrTiO 3 single crystal substrate (STO) and superconducting pure and 10 at.% Ca-substituted YBCO thin films grown on CeO 2 buffered Al 2O 3 substrates (CAO) have been analyzed as a function of the temperature, applied magnetic field and angle between magnetic field direction and the direction normal to the film surfaces. Particularly, the angular analysis provides an easy way to discriminate between isotropic point defects and correlated pinning sites. Despite the intragrain pinning mechanisms remained unaffected by Ca substitution, a detrimental effect on grain boundary properties clearly emerged for 10 at.% Ca concentration. This effect is enhanced in sample grown on CeO 2 buffered sapphire where a more disturbed grain boundary is expected resulting in an enhancement of the correlated pinning, already observed in pure YBCO films grown on CAO, and in a reduction of the intrinsic pinning efficiency.

  2. The role of thermally and chemically stable composite Y2O3:Al2O3 in the development of YBa2Cu3O7-x films on metal substrates

    NASA Astrophysics Data System (ADS)

    Stan, L.; Tao, B. W.; Holesinger, T. G.; Yang, H.; Feldmann, D. M.; Maiorov, B.; Baily, S. A.; Civale, L.; DePaula, R. F.; Li, Y. R.; Jia, Q. X.

    2010-04-01

    We have developed Y2O3:Al2O3 (YAlO) composites to simplify the architecture of superconducting YBa2Cu3O7-x (YBCO) thick films on polycrystalline metal substrates. By implementing the use of YAlO, we have reduced the total number of non-superconducting layers between the polycrystalline metal substrate and the YBCO film from five (as in the standard architecture used by industry) to three. The YBCO films grown on this simplified platform exhibited an in-plane mosaic spread of less than 4° in full width at half-maximum, correlated pinning centered at \\mathbf {H}\\parallel c , and an α value (the proportionality factor of the critical current density H - α) of around 0.38 over the field range of 0.1-1.0 T. We believe that the excellent structural stability at high temperatures and the exceptional chemical inertness in an oxidizing environment make YAlO a good choice for use in the growth of biaxially oriented MgO and subsequent buffer and superconducting layers.

  3. Characterization and prevention of humidity related degradation of atomic layer deposited Al2O3

    NASA Astrophysics Data System (ADS)

    Rückerl, Andreas; Zeisel, Roland; Mandl, Martin; Costina, Ioan; Schroeder, Thomas; Zoellner, Marvin H.

    2017-01-01

    Atomic layer deposited aluminum oxide (ALD-Al2O3) is a dielectric material, which is widely used in organic light emitting diodes in order to prevent their organic layers from humidity related degradation. Unfortunately, there are strong hints that in some cases, ALD-Al2O3 itself is suffering from humidity related degradation. Especially, high temperature and high humidity seem to enhance ALD-Al2O3 degradation strongly. For this reason, the degradation behavior of ALD-Al2O3 films at high temperature and high humidity was investigated in detail and a way to prevent it from degradation was searched. The degradation behavior is analyzed in the first part of this paper. Using infrared absorbance measurements and X-ray diffraction, boehmite (γ-AlOOH) was identified as a degradation product. In the second part of the paper, it is shown that ALD-Al2O3 films can be effectively protected from degradation using a silicon oxide capping. The deposition of very small amounts of silicon in a molecular beam epitaxy system and an X-ray photoelectron spectroscopy investigation of the chemical bonding between the silicon and the ALD-Al2O3 surface led to the conclusion that a silicon termination of the ALD-Al2O3 surface (Al*-O-SiOx) is able to stop humidity related degradation of the underlying ALD-Al2O3 films. The third part of the paper shows that the protection mechanism of the silicon termination is probably due to the strong tendency of silicic acid to resilificate exposed ALD-Al2O3 surfaces. The protective effect of a simple silicon source on an ALD-Al2O3 surface is shown exemplary and the related chemical reactions are presented.

  4. The MgO-Al2O3-SiO2 system - Free energy of pyrope and Al2O3-enstatite. [in earth mantle formation

    NASA Technical Reports Server (NTRS)

    Saxena, S. K.

    1981-01-01

    The model of fictive ideal components is used to determine Gibbs free energies of formation of pyrope and Al2O3-enstatite from the experimental data on coexisting garnet and orthopyroxene and orthopyroxene and spinel in the temperature range 1200-1600 K. It is noted that Al2O3 forms an ideal solution with MgSiO3. These thermochemical data are found to be consistent with the Al2O3 isopleths that could be drawn using most recent experimental data and with the reversed experimental data on the garnet-spinel field boundary.

  5. High Temperature Mechanical Characterization and Analysis of Al2O3 /Al2O3 Composition

    NASA Technical Reports Server (NTRS)

    Gyekenyesi, John Z.; Jaskowiak, Martha H.

    1999-01-01

    Sixteen ply unidirectional zirconia coated single crystal Al2O3 fiber reinforced polycrystalline Al2O3 was tested in uniaxial tension at temperatures to 1400 C in air. Fiber volume fractions ranged from 26 to 31%. The matrix has primarily open porosity of approximately 40%. Theories for predicting the Young's modulus, first matrix cracking stress, and ultimate strength were applied and evaluated for suitability in predicting the mechanical behavior of Al2O3/Al2O3 composites. The composite exhibited pseudo tough behavior (increased area under the stress/strain curve relative to monolithic alumina) from 22 to 1400 C. The rule-of-mixtures provides a good estimate of the Young's modulus of the composite using the constituent properties from room temperature to approximately 1200 C for short term static tensile tests in air. The ACK theory provides the best approximation of the first matrix cracking stress while accounting for residual stresses at room temperature. Difficulties in determining the fiber/matrix interfacial shear stress at high temperatures prevented the accurate prediction of the first matrix cracking stress above room temperature. The theory of Cao and Thouless, based on Weibull statistics, gave the best prediction for the composite ultimate tensile strength.

  6. Metastability in the MgAl2O4-Al2O3 System

    DOE PAGES

    Wilkerson, Kelley R.; Smith, Jeffrey D.; Hemrick, James G.

    2014-07-22

    Aluminum oxide must take a spinel form ( γ-Al2O3) at elevated temperatures in order for extensive solid solution to form between MgAl2O4 and α-Al2O3. The solvus line between MgAl2O4 and Al2O3 has been defined at 79.6 wt% Al2O3 at 1500°C, 83.0 wt% Al2O3 at 1600°C, and 86.5 wt% Al2O3 at 1700°C. A metastable region has been defined at temperatures up to 1700°C which could have significant implications for material processing and properties. Additionally, initial processing could have major implications on final chemistry. The spinel solid solution region has been extended to form an infinite solid solution with Al2O3 at elevatedmore » temperatures. A minimum in melting at 1975°C and a chemistry of 96 wt% Al2O3 rather than a eutectic is present, resulting in no eutectic crystal formation during solidification.« less

  7. Effect of Ultrasonic Vibration on the Behavior of Antifriction and Wear Resistance of Al2O3/Al2O3 Ceramic Friction Pairs Under Oil Lubrication

    NASA Astrophysics Data System (ADS)

    Dong, X. Y.; Qiao, Y. L.; Zang, Y.; Cui, Q. S.

    The behavior of antifriction and wear resistance of Al2O3/Al2O3 ceramic friction pairs lubricated by four different lubrication oils under ultrasonic vibration was studied. The surface morphologies of wear scare was analyzed by metallographic microscope. The effect mechanism of ultrasonic vibration on frictional pairs under different lubrication oils was discussed. The studied results showed that, ultrasonic vibration would improve the behavior of antifriction and wear resistance of the Al2O3/Al2O3 ceramic friction pairs under various lubrication oils.The improving would be dramaticer when the viscosity of lubrication oil was low. Ultrasonic vibration decreased the friction coefficient and wear volume 12.9% and 38.7% respectively, when the lubrication oil was 6#,the viscosity of which is 39.77 mm2/s. When the lubrication oil was 150BS, the viscosity of which is 549.69 mm2/s, ultrasonic vibration made friction coefficient and wear volume decreased 4.6% and 11.6% respectively.The effect of ultrasonic vibration on the behavior of antifriction and wear resistance of Al2O3/Al2O3 ceramic friction pairs was determined by the formation and the destruction of oil film on the friction surface and the upward floatage created by ultrasonic vibration.

  8. Interface behavior of Al2O3/Ti joints produced by liquid state bonding.

    PubMed

    Lemus-Ruiz, J; Guevara-Laureano, A O; Zarate-Medina, J; Arellano-Lara, A; Ceja-Cárdenas, L

    2015-04-01

    In this work we study brazing of Al2O3 to Ti with biocompatibility properties, using a Au-foil as joining element. Al2O3 was produced by sintering of powder at 1550°C. Al2O3 samples were coated with a 2 and 4μm thick of Mo layer and then stacked with Ti. Al2O3-Mo/Au/Ti combinations were joined at 1100°C in vacuum. Successful joining of Mo-Al2O3 to Ti was observed. Interface shows the formation of a homogeneous diffusion zone. Mo diffused inside Au forming a concentration line. Ti3Au and TiAu phases were observed.

  9. Structural, electronic structure, and band alignment properties at epitaxial NiO/Al2O3 heterojunction evaluated from synchrotron based X-ray techniques

    NASA Astrophysics Data System (ADS)

    Singh, S. D.; Nand, Mangla; Das, Arijeet; Ajimsha, R. S.; Upadhyay, Anuj; Kamparath, Rajiv; Shukla, D. K.; Mukherjee, C.; Misra, P.; Rai, S. K.; Sinha, A. K.; Jha, S. N.; Phase, D. M.; Ganguli, Tapas

    2016-04-01

    The valence band offset value of 2.3 ± 0.2 eV at epitaxial NiO/Al2O3 heterojunction is determined from photoelectron spectroscopy experiments. Pulsed laser deposited thin film of NiO on Al2O3 substrate is epitaxially grown along [111] direction with two domain structures, which are in-plane rotated by 60° with respect to each other. Observation of Pendellosung oscillations around Bragg peak confirms high interfacial and crystalline quality of NiO layer deposited on Al2O3 substrate. Surface related feature in Ni 2p3/2 core level spectra along with oxygen K-edge soft X-ray absorption spectroscopy results indicates that the initial growth of NiO on Al2O3 substrate is in the form of islands, which merge to form NiO layer for the larger coverage. The value of conduction band offset is also evaluated from the measured values of band gaps of NiO and Al2O3 layers. A type-I band alignment at NiO and Al2O3 heterojunction is also obtained. The determined values of band offsets can be useful in heterojunction based light emitting devices.

  10. Epitaxially grown crystalline Al2O3 interlayer on β-Ga2O3(010) and its suppressed interface state density

    NASA Astrophysics Data System (ADS)

    Kamimura, Takafumi; Krishnamurthy, Daivasigamani; Kuramata, Akito; Yamakoshi, Shigenobu; Higashiwaki, Masataka

    2016-12-01

    Al2O3 films were deposited on β-Ga2O3(010) and β-Ga2O3 (\\bar{2}01) substrates by atomic layer deposition at 250 °C, and their interface state densities (D it) at shallow energies were evaluated using a high-low capacitance-voltage (C-V) method. Al2O3/β-Ga2O3(010) showed lower D it values (5.9 × 1010 to 9.3 × 1011 cm-2 eV-1) than Al2O3/β-Ga2O3 (\\bar{2}01) (2.0 × 1011 to 2.0 × 1012 cm-2 eV-1) in an energy range of -0.8 to -0.1 eV. Cross-sectional transmission electron microscopy analysis indicated the formation of a uniform amorphous Al2O3 layer on the β-Ga2O3 (\\bar{2}01) substrate. In contrast, a crystalline Al2O3 interlayer with a thickness of 3.2 ± 0.7 nm with an amorphous Al2O3 top layer was formed on the β-Ga2O3(010) substrate, which effectively decreased D it. Moreover, thicker interlayers showing lower D it values at deep state levels were formed at deposition temperatures higher than 100 °C, which were evaluated by shifts in the C-V curves.

  11. Formation and stability of crystalline and amorphous Al2O3 layers deposited on Ga2O3 nanowires by atomic layer epitaxy

    NASA Astrophysics Data System (ADS)

    Katz, M. B.; Twigg, M. E.; Prokes, S. M.

    2016-09-01

    Although the crystalline α and γ phases are the most stable forms of alumina, small-diameter (<6 nm) nanoparticles are known to be completely amorphous, due to the surface energy being correspondingly lower for the less stable non-crystalline phase. Al2O3 films with a thickness of 5 nm grown by low temperature (200 °C) atomic layer deposition (ALD) on small-diameter (<20 nm) Ga2O3 nanowires (NWs), however, are identified by transmission electron microscopy as belonging to the α, γ, and possibly θ crystalline phases of Al2O3, while films deposited on larger diameter (>20 nm) NWs are found to be amorphous. Indeed, until recently, all Al2O3, films deposited by low-temperature ALD using trimethylaluminum and water have been reported to be amorphous, regardless of film thickness or substrate. The formation of a crystalline ALD film can be understood in terms of the energetics of misfit dislocations that maintain the registry between the ALD film and the NW substrate, as well as the influence of strain and surface energy. The decreasing energy of co-axial misfit dislocations with NW diameter results in a corresponding decrease in the contribution of the Al2O3/Ga2O3 interface to the free energy, while the interfacial energy for an amorphous film is independent of the NW diameter. Therefore, for NW cores of sufficiently small diameter, the free energy contribution of the Al2O3/Ga2O3 interface is smaller for crystalline films than for amorphous films, thereby favoring the formation of crystalline films for small-diameter NWs. For ALD Al2O3 films of 10 nm thickness deposited on small-diameter Ga2O3 NWs, however, only the first 5 nm of the ALD film is found to be crystalline, possibly due to well-established kinetic limitations to low temperature epitaxial growth.

  12. Al2O3 on Black Phosphorus by Atomic Layer Deposition: An in Situ Interface Study.

    PubMed

    Zhu, Hui; McDonnell, Stephen; Qin, Xiaoye; Azcatl, Angelica; Cheng, Lanxia; Addou, Rafik; Kim, Jiyoung; Ye, Peide D; Wallace, Robert M

    2015-06-17

    In situ "half cycle" atomic layer deposition (ALD) of Al2O3 was carried out on black phosphorus ("black-P") surfaces with modified phosphorus oxide concentrations. X-ray photoelectron spectroscopy is employed to investigate the interfacial chemistry and the nucleation of the Al2O3 on black-P surfaces. This work suggests that exposing a sample that is initially free of phosphorus oxide to the ALD precursors does not result in detectable oxidation. However, when the phosphorus oxide is formed on the surface prior to deposition, the black-P can react with both the surface adventitious oxygen contamination and the H2O precursor at a deposition temperature of 200 °C. As a result, the concentration of the phosphorus oxide increases after both annealing and the atomic layer deposition process. The nucleation rate of Al2O3 on black-P is correlated with the amount of oxygen on samples prior to the deposition. The growth of Al2O3 follows a "substrate inhibited growth" behavior where an incubation period is required. Ex situ atomic force microscopy is also used to investigate the deposited Al2O3 morphologies on black-P where the Al2O3 tends to form islands on the exfoliated black-P samples. Therefore, surface functionalization may be needed to get a conformal coverage of Al2O3 on the phosphorus oxide free samples.

  13. Characterization of SDC-Al2O3 solid electrolyte

    NASA Astrophysics Data System (ADS)

    Ramesh, S.; Raju, K. C. James; Reddy, C. Vishnuvardhan

    2012-06-01

    SDC20-Al2O3 materials were synthesized through the sol-gel method. Dense SDC20-Al2O3 ceramics were obtained through sintering the pellets at 1300°C. SDC20-Al2O3 materials were characterized by XRD, SEM and impedance spectroscopy. XRD measurements indicate that synthesized materials crystallized in cubic structure. Average crystallite size of the samples was in the range 11-12 nm. The relative density of SDC20-Al2O3 samples was over 95% of the theoretical density. Addition of Al2O3 promotes densification. Surface morphology was analyzed using SEM. The two-probe a.c. impedance spectroscopy was used to study the total ionic conductivity of doped and co-doped ceria in the temperature range 350-700°C. The SDC20-Al2O3 composition showed improved total ionic conductivity and minimum activation energy.

  14. Nucleation and growth mechanisms of Al2O3 atomic layerdeposition on synthetic polycrystalline MoS2.

    PubMed

    Zhang, H; Chiappe, D; Meersschaut, J; Conard, T; Franquet, A; Nuytten, T; Mannarino, M; Radu, I; Vandervorst, W; Delabie, A

    2017-02-07

    Two-dimensional (2D) semiconducting transition metal dichalcogenides (TMDs) are of great interest for applications in nano-electronic devices. Their incorporation requires the deposition of nm-thin and continuous high-k dielectric layers on the 2D TMDs. Atomic layer deposition (ALD) of high-k dielectric layers is well established on Si surfaces: the importance of a high nucleation density for rapid layer closure is well known and the nucleation mechanisms have been thoroughly investigated. In contrast, the nucleation of ALD on 2D TMD surfaces is less well understood and a quantitative analysis of the deposition process is lacking. Therefore, in this work, we investigate the growth of Al2O3 (using Al(CH3)3/H2O ALD) on MoS2 whereby we attempt to provide a complete insight into the use of several complementary characterization techniques, including X-ray photo-electron spectroscopy, elastic recoil detection analysis, scanning electron microscopy, and time-of-flight secondary ion mass spectrometry. To reveal the inherent reactivity of MoS2, we exclude the impact of surface contamination from a transfer process by direct Al2O3 deposition on synthetic MoS2 layers obtained by a high temperature sulfurization process. It is shown that Al2O3 ALD on the MoS2 surface is strongly inhibited at temperatures between 125°C and 300°C, with no growth occurring on MoS2 crystal basal planes and selective nucleation only at line defects or grain boundaries at MoS2 top surface. During further deposition, the as-formed Al2O3 nano-ribbons grow in both vertical and lateral directions. Eventually, a continuous Al2O3 film is obtained by lateral growth over the MoS2 crystal basal plane, with the point of layer closure determined by the grain size at the MoS2 top surface and the lateral growth rate. The created Al2O3/MoS2 interface consists mainly of van der Waals interactions. The nucleation is improved by contributions of reversible adsorption on the MoS2 basal planes by using low

  15. Nucleation and growth mechanisms of Al2O3 atomic layer deposition on synthetic polycrystalline MoS2

    NASA Astrophysics Data System (ADS)

    Zhang, H.; Chiappe, D.; Meersschaut, J.; Conard, T.; Franquet, A.; Nuytten, T.; Mannarino, M.; Radu, I.; Vandervorst, W.; Delabie, A.

    2017-02-01

    Two-dimensional (2D) semiconducting transition metal dichalcogenides (TMDs) are of great interest for applications in nano-electronic devices. Their incorporation requires the deposition of nm-thin and continuous high-k dielectric layers on the 2D TMDs. Atomic layer deposition (ALD) of high-k dielectric layers is well established on Si surfaces: the importance of a high nucleation density for rapid layer closure is well known and the nucleation mechanisms have been thoroughly investigated. In contrast, the nucleation of ALD on 2D TMD surfaces is less well understood and a quantitative analysis of the deposition process is lacking. Therefore, in this work, we investigate the growth of Al2O3 (using Al(CH3)3/H2O ALD) on MoS2 whereby we attempt to provide a complete insight into the use of several complementary characterization techniques, including X-ray photo-electron spectroscopy, elastic recoil detection analysis, scanning electron microscopy, and time-of-flight secondary ion mass spectrometry. To reveal the inherent reactivity of MoS2, we exclude the impact of surface contamination from a transfer process by direct Al2O3 deposition on synthetic MoS2 layers obtained by a high temperature sulfurization process. It is shown that Al2O3 ALD on the MoS2 surface is strongly inhibited at temperatures between 125°C and 300°C, with no growth occurring on MoS2 crystal basal planes and selective nucleation only at line defects or grain boundaries at MoS2 top surface. During further deposition, the as-formed Al2O3 nano-ribbons grow in both vertical and lateral directions. Eventually, a continuous Al2O3 film is obtained by lateral growth over the MoS2 crystal basal plane, with the point of layer closure determined by the grain size at the MoS2 top surface and the lateral growth rate. The created Al2O3/MoS2 interface consists mainly of van der Waals interactions. The nucleation is improved by contributions of reversible adsorption on the MoS2 basal planes by using low

  16. Oxidation of Al2O3 continuous fiber-reinforced/NiAl composites

    NASA Technical Reports Server (NTRS)

    Doychak, J.; Nesbitt, J. A.; Noebe, R. D.; Bowman, R. R.

    1992-01-01

    The 1200 C and 1300 C isothermal and cyclic oxidation behavior of Al2O3 continuous fiber-reinforced/NiAl composites were studied. Oxidation resulted in formation of Al2O3 external scales in a similar manner as scales formed on monolithic NiAl. The isothermal oxidation of an Al2O3/NiAl composite resulted in oxidation of the matrix along the fiber/matrix interface near the fiber ends. This oxide acted as a wedge between the fiber and the matrix, and, under cyclic oxidation conditions, led to further oxidation along the fiber lengths and eventual cracking of the composite. The oxidation behavior of composites in which the Al2O3 fibers were sputter coated with nickel prior to processing was much more severe. This was attributed to open channels around the fibers which formed during processing, most likely as a result of the diffusion of the nickel coating into the matrix.

  17. Formation of gamma(sup prime)-Ni3Al via the Peritectoid Reaction: gamma + beta (+ Al2O3)=gamma(sup prime)(+ Al2O3)

    NASA Technical Reports Server (NTRS)

    Copeland, Evan

    2008-01-01

    The activities of Al and Ni were measured using multi-cell Knudsen effusion-cell mass spectrometry (multi-cell KEMS), over the composition range 8-32 at.%Al and temperature range T=1400-1750 K in the Ni-Al-O system. These measurements establish that equilibrium solidification of gamma(sup prime)-Ni3Al-containing alloys occurs by the eutectic reaction, L (+ Al2O3)=gamma + Beta(+ Al2O3), at 1640 +/- 1 K and a liquid composition of 24.8 +/- 0.2 at.%al (at an unknown oxygen content). The {gamma + Beta (+Al2O3} phase field is stable over the temperature range 1633-1640 K, and gamma(sup prime)-Ni3Al forms via the peritectoid, gamma + Beta (+ Al2O3)=gamma(sup prime) (+ Al2O3), at 1633 +/- 1 K. This behavior is consistent with the current Ni-Al phase diagram and a new diagram is proposed. This new Ni-Al phase diagram explains a number of unusual steady-state solidification structures reported previously and provides a much simpler reaction scheme in the vicinity of the gamma(sup prime)-Ni2Al phase field.

  18. Formation of gamma'-Ni3Al via the Peritectoid Reaction: gamma plus beta (+Al2O3) equals gamma'(+Al2O3)

    NASA Technical Reports Server (NTRS)

    Copland, Evan

    2008-01-01

    The activities of Al and Ni were measured using multi-cell Knudsen effusion-cell mass spectrometry (multi-cell KEMS), over the composition range 8 - 32 at.%Al and temperature range T = 1400 - 1750 K in the Ni-Al-O system. These measurements establish that equilibrium solidification of gamma'-Ni3Al-containing alloys occurs by the eutectic reaction, L (+ Al2O3) = gamma + beta (+ Al2O3), at 1640 plus or minus 1 K and a liquid composition of 24.8 plus or minus 0.2 at.%Al (at an unknown oxygen content). The {gamma + beta + Al2O3} phase field is stable over the temperature range 1633 - 1640 K, and gamma'-Ni3Al forms via the peritectiod, gamma + beta (+ Al2O3) = gamma'(+ Al2O3), at 1633 plus or minus 1 K. This behavior is inconsistent with the current Ni-Al phase diagram and a new diagram is proposed. This new Ni-Al phase diagram explains a number of unusual steady state solidification structures reported previously and provides a much simpler reaction scheme in the vicinity of the gamma'-Ni3Al phase field.

  19. Radiation endurance in Al2O3 nanoceramics

    NASA Astrophysics Data System (ADS)

    García Ferré, F.; Mairov, A.; Ceseracciu, L.; Serruys, Y.; Trocellier, P.; Baumier, C.; Kaïtasov, O.; Brescia, R.; Gastaldi, D.; Vena, P.; Beghi, M. G.; Beck, L.; Sridharan, K.; di Fonzo, F.

    2016-09-01

    The lack of suitable materials solutions stands as a major challenge for the development of advanced nuclear systems. Most issues are related to the simultaneous action of high temperatures, corrosive environments and radiation damage. Oxide nanoceramics are a promising class of materials which may benefit from the radiation tolerance of nanomaterials and the chemical compatibility of ceramics with many highly corrosive environments. Here, using thin films as a model system, we provide new insights into the radiation tolerance of oxide nanoceramics exposed to increasing damage levels at 600 °C –namely 20, 40 and 150 displacements per atom. Specifically, we investigate the evolution of the structural features, the mechanical properties, and the response to impact loading of Al2O3 thin films. Initially, the thin films contain a homogeneous dispersion of nanocrystals in an amorphous matrix. Irradiation induces crystallization of the amorphous phase, followed by grain growth. Crystallization brings along an enhancement of hardness, while grain growth induces softening according to the Hall-Petch effect. During grain growth, the excess mechanical energy is dissipated by twinning. The main energy dissipation mechanisms available upon impact loading are lattice plasticity and localized amorphization. These mechanisms are available in the irradiated material, but not in the as-deposited films.

  20. Radiation endurance in Al2O3 nanoceramics

    PubMed Central

    García Ferré, F.; Mairov, A.; Ceseracciu, L.; Serruys, Y.; Trocellier, P.; Baumier, C.; Kaïtasov, O.; Brescia, R.; Gastaldi, D.; Vena, P.; Beghi, M. G.; Beck, L.; Sridharan, K.; Di Fonzo, F.

    2016-01-01

    The lack of suitable materials solutions stands as a major challenge for the development of advanced nuclear systems. Most issues are related to the simultaneous action of high temperatures, corrosive environments and radiation damage. Oxide nanoceramics are a promising class of materials which may benefit from the radiation tolerance of nanomaterials and the chemical compatibility of ceramics with many highly corrosive environments. Here, using thin films as a model system, we provide new insights into the radiation tolerance of oxide nanoceramics exposed to increasing damage levels at 600 °C –namely 20, 40 and 150 displacements per atom. Specifically, we investigate the evolution of the structural features, the mechanical properties, and the response to impact loading of Al2O3 thin films. Initially, the thin films contain a homogeneous dispersion of nanocrystals in an amorphous matrix. Irradiation induces crystallization of the amorphous phase, followed by grain growth. Crystallization brings along an enhancement of hardness, while grain growth induces softening according to the Hall-Petch effect. During grain growth, the excess mechanical energy is dissipated by twinning. The main energy dissipation mechanisms available upon impact loading are lattice plasticity and localized amorphization. These mechanisms are available in the irradiated material, but not in the as-deposited films. PMID:27653832

  1. Millimeter distance effects of surface plasmon polaritons in electroformed Al-Al2O3-Ag diodes

    NASA Astrophysics Data System (ADS)

    Hickmott, T. W.

    2017-02-01

    Electroforming of metal-insulator-metal diodes is a soft dielectric breakdown that changes the high resistance of as-prepared diodes to a low resistance state. Electroforming of Al-Al2O3-metal diodes with anodic Al2O3 results in voltage-controlled negative resistance in the current-voltage (I-V) characteristics, electroluminescence (EL), and electron emission into vacuum (EM). EL is due to electrons injected at the Al-Al2O3 interface combining with radiative defects in Al2O3. Surface plasmon polaritons (SPPs) are electromagnetic waves that can be excited by photons or electrons. SPPs are confined to a metal-dielectric interface, cause large electric fields in the metal and dielectric, and have ranges of micrometers. The temperature dependence of I-V curves, EL, and EM of a group of electroformed Al-Al2O3-Ag diodes with Al2O3 thicknesses between 12 nm and 20 nm, group A, was measured between 200 K and 300 K. After a sequence of temperature measurements, the Al-Al2O3-Ag diodes, the Al-Al2O3 regions between diodes, and portions of the Ag on the glass region that provides contacts to the diodes are darkened. The range of darkening is >7 mm in a diode with 12 nm of Al2O3 and 2.0-3.5 mm in diodes with Al2O3 thicknesses between 14 nm and 20 nm. Darkening is attributed to the occurrence of SPPs generated by EL photons at the Ag-Al2O3 and Al-Al2O3 interfaces. The results are compared to a second group of Al-Al2O3-Ag diodes with identical Al2O3 thicknesses, group B, that were prepared in the same way as the diodes of group A except for a difference in the deposition of Al films for the two groups. Al-Al2O3-Ag diodes of group B exhibit enhanced EL, which is attributed to spontaneous emission of recombination centers in Al2O3 being enhanced by large electromagnetic fields that are due to SPPs that are generated by EL photons.

  2. Optical properties of the Al2O3/SiO2 and Al2O3/HfO2/SiO2 antireflective coatings

    NASA Astrophysics Data System (ADS)

    Marszałek, Konstanty; Winkowski, Paweł; Jaglarz, Janusz

    2014-01-01

    Investigations of bilayer and trilayer Al2O3/SiO2 and Al2O3/HfO2/SiO2 antireflective coatings are presented in this paper. The oxide films were deposited on a heated quartz glass by e-gun evaporation in a vacuum of 5 × 10-3 [Pa] in the presence of oxygen. Depositions were performed at three different temperatures of the substrates: 100 °C, 200 °C and 300 °C. The coatings were deposited onto optical quartz glass (Corning HPFS). The thickness and deposition rate were controlled with Inficon XTC/2 thickness measuring system. Deposition rate was equal to 0.6 nm/s for Al2O3, 0.6 nm - 0.8 nm/s for HfO2 and 0.6 nm/s for SiO2. Simulations leading to optimization of the thin film thickness and the experimental results of optical measurements, which were carried out during and after the deposition process, have been presented. The optical thickness values, obtained from the measurements performed during the deposition process were as follows: 78 nm/78 nm for Al2O3/SiO2 and 78 nm/156 nm/78 nm for Al2O3/HfO2/SiO2. The results were then checked by ellipsometric technique. Reflectance of the films depended on the substrate temperature during the deposition process. Starting from 240 nm to the beginning of visible region, the average reflectance of the trilayer system was below 1 % and for the bilayer, minima of the reflectance were equal to 1.6 %, 1.15 % and 0.8 % for deposition temperatures of 100 °C, 200 °C and 300 °C, respectively.

  3. The origin of low water vapor transmission rates through Al2O3/ZrO2 nanolaminate gas-diffusion barriers grown by atomic layer deposition

    NASA Astrophysics Data System (ADS)

    Meyer, J.; Schmidt, H.; Kowalsky, W.; Riedl, T.; Kahn, A.

    2010-06-01

    This paper reports on thin film gas-diffusion barriers consisting of Al2O3/ZrO2 nanolaminates (NL) grown by low-temperature (80 °C) atomic layer deposition. We show that reliable barriers with water vapor transmission rates of 3.2×10-4 g/(m2 day), measured at 80 °C and 80% relative humidity, can be realized with very thin layers down to 40 nm. We determine that ZrO2 acts as anticorrosion element in our NL. Furthermore, we demonstrate by x-ray photoemission spectroscopy that an aluminate phase is formed at the interfaces between Al2O3 and ZrO2 sublayers, which additionally improves the gas-diffusion barrier due to a densification of the layer system. These Al2O3/ZrO2 NLs prepared at low temperatures hold considerable promises for application in organic electronics and beyond.

  4. Surface passivation and optical characterization of Al2O3/a-SiCx stacks on c-Si substrates.

    PubMed

    López, Gema; Ortega, Pablo R; Voz, Cristóbal; Martín, Isidro; Colina, Mónica; Morales, Anna B; Orpella, Albert; Alcubilla, Ramón

    2013-01-01

    The aim of this work is to study the surface passivation of aluminum oxide/amorphous silicon carbide (Al2O3/a-SiCx) stacks on both p-type and n-type crystalline silicon (c-Si) substrates as well as the optical characterization of these stacks. Al2O3 films of different thicknesses were deposited by thermal atomic layer deposition (ALD) at 200 °C and were complemented with a layer of a-SiCx deposited by plasma-enhanced chemical vapor deposition (PECVD) to form anti-reflection coating (ARC) stacks with a total thickness of 75 nm. A comparative study has been carried out on polished and randomly textured wafers. We have experimentally determined the optimum thickness of the stack for photovoltaic applications by minimizing the reflection losses over a wide wavelength range (300-1200 nm) without compromising the outstanding passivation properties of the Al2O3 films. The upper limit of the surface recombination velocity (S eff,max) was evaluated at a carrier injection level corresponding to 1-sun illumination, which led to values below 10 cm/s. Reflectance values below 2% were measured on textured samples over the wavelength range of 450-1000 nm.

  5. Electrowetting properties of atomic layer deposited Al2O3 decorated silicon nanowires

    NASA Astrophysics Data System (ADS)

    Rajkumar, K.; Rajavel, K.; Cameron, D. C.; Mangalaraj, D.; Rajendrakumar, R. T.

    2015-06-01

    This paper reports the electrowetting properties of liquid droplet on superhydrophobic silicon nanowires with Atomic layer deposited (ALD) Al2O3 as dielectric layer. Silicon wafer were etched by metal assisted wet chemical etching with silver as catalyst. ALD Al2O3 films of 10nm thickness were conformally deposited over silicon nanowires. Al2O3 dielectric film coated silicon nanowires was chemically modified with Trichloro (1H, 1H, 2H, 2H-perfluorooctyl) silane to make it superhydrophobic(SHP). The contact angle was measured and all the samples exhibited superhydrophobic nature with maximum contact angles of 163° and a minimum contact angle hysteresis of 6°. Electrowetting induced a maximum reversible decrease of the contact angle of 20°at 150V in air.

  6. Pt-Al2O3 dual layer atomic layer deposition coating in high aspect ratio nanopores.

    PubMed

    Pardon, Gaspard; Gatty, Hithesh K; Stemme, Göran; van der Wijngaart, Wouter; Roxhed, Niclas

    2013-01-11

    Functional nanoporous materials are promising for a number of applications ranging from selective biofiltration to fuel cell electrodes. This work reports the functionalization of nanoporous membranes using atomic layer deposition (ALD). ALD is used to conformally deposit platinum (Pt) and aluminum oxide (Al(2)O(3)) on Pt in nanopores to form a metal-insulator stack inside the nanopore. Deposition of these materials inside nanopores allows the addition of extra functionalities to nanoporous materials such as anodic aluminum oxide (AAO) membranes. Conformal deposition of Pt on such materials enables increased performances for electrochemical sensing applications or fuel cell electrodes. An additional conformal Al(2)O(3) layer on such a Pt film forms a metal-insulator-electrolyte system, enabling field effect control of the nanofluidic properties of the membrane. This opens novel possibilities in electrically controlled biofiltration. In this work, the deposition of these two materials on AAO membranes is investigated theoretically and experimentally. Successful process parameters are proposed for a reliable and cost-effective conformal deposition on high aspect ratio three-dimensional nanostructures. A device consisting of a silicon chip supporting an AAO membrane of 6 mm diameter and 1.3 μm thickness with 80 nm diameter pores is fabricated. The pore diameter is reduced to 40 nm by a conformal deposition of 11 nm Pt and 9 nm Al(2)O(3) using ALD.

  7. Microstructure and High-Temperature Mechanical Properties of ZrO2-Al2O3-SiC Ceramics

    NASA Astrophysics Data System (ADS)

    Zhang, Xiu-Ping; Ouyang, Jia-Hu; Wang, Yu-Jin; Liu, Zhan-Guo; Wang, Ya-Ming

    2015-09-01

    In the present work, ZrO2-Al2O3 ceramics incorporated with and without β-SiC were prepared by hot pressing. ZrO2-Al2O3 ceramic powder used in this study is a mixture of 71 vol.% YSZ (3 mol.% Y2O3 partially stabilized zirconia) and 29 vol.% α-Al2O3. β-SiC powders with different volume fractions are added into the ZrO2-Al2O3 powder to form the composite powder. The microstructure and high-temperature mechanical properties of ZrO2-Al2O3-SiC ceramics were investigated by tailoring the compositions and sintering parameters to optimize the strengthening mechanisms. For a comparative study, the TZ3Y20A powder was also hot-pressed under identical sintering condition to form dense bulk ceramic. ZrO2-Al2O3-SiC ceramics consist mainly of t-ZrO2, α-Al2O3, and β-SiC phases. SiC particles in the ZrO2-Al2O3 ceramic restrain the grain growth of the oxide matrix. The incorporation of SiC into ZrO2-Al2O3 ceramic enhances high-temperature flexural strength at 1273 K. ZrO2-Al2O3 ceramic incorporated with 15 vol.% SiC has a flexural strength of 518 MPa at 1273 K, much higher than that (201 MPa) of unmodified ZrO2-Al2O3 ceramic.

  8. Low-Temperature Process for Atomic Layer Chemical Vapor Deposition of an Al2O3 Passivation Layer for Organic Photovoltaic Cells.

    PubMed

    Kim, Hoonbae; Lee, Jihye; Sohn, Sunyoung; Jung, Donggeun

    2016-05-01

    Flexible organic photovoltaic (OPV) cells have drawn extensive attention due to their light weight, cost efficiency, portability, and so on. However, OPV cells degrade quickly due to organic damage by water vapor or oxygen penetration when the devices are driven in the atmosphere without a passivation layer. In order to prevent damage due to water vapor or oxygen permeation into the devices, passivation layers have been introduced through methods such as sputtering, plasma enhanced chemical vapor deposition, and atomic layer chemical vapor deposition (ALCVD). In this work, the structural and chemical properties of Al2O3 films, deposited via ALCVD at relatively low temperatures of 109 degrees C, 200 degrees C, and 300 degrees C, are analyzed. In our experiment, trimethylaluminum (TMA) and H2O were used as precursors for Al2O3 film deposition via ALCVD. All of the Al2O3 films showed very smooth, featureless surfaces without notable defects. However, we found that the plastic flexible substrate of an OPV device passivated with 300 degrees C deposition temperature was partially bended and melted, indicating that passivation layers for OPV cells on plastic flexible substrates need to be formed at temperatures lower than 300 degrees C. The OPV cells on plastic flexible substrates were passivated by the Al2O3 film deposited at the temperature of 109 degrees C. Thereafter, the photovoltaic properties of passivated OPV cells were investigated as a function of exposure time under the atmosphere.

  9. Electrochemical synthesis of polypyrrole-Al2O3 composite coating on 316 stainless steel for corrosion protection

    NASA Astrophysics Data System (ADS)

    Yan, Qun; Li, Chuanxian; Huang, Tingting; Yang, Fei

    2017-03-01

    Polypyrrole (PPy)-Al2O3 composite coating was electrochemically deposited on 316 stainless steel (316 SS) by cyclic voltammetry technique. Scanning electron microscopy (SEM) and Fourier transform infrared spectroscopy (FT-IR) were employed to understand the morphology and composition of the PPy-Al2O3 coated SS. The corrosion protection ability of the PPy-Al2O3 coating was studied using open circuit potential (Eocp)-time measurements, polarization curves, and electrochemical impedance spectroscopy (EIS) after the electrodes had been immersed in a 3.5 wt% NaCl solution as the corrosive media. The results showed that PPy-Al2O3 composite coatings have a homogeneous and smooth surface without detectable cracks. Anodic polarization analysis revealed that the hybrid films provided an exceptional barrier and corrosion protection in comparison with PPy coating. The EIS studies indicated that the charge transfer resistance increases with the presence of PPy-Al2O3. PPy-Al2O3 composite coating provides better corrosion protection and can be considered as a coating material to protect 316SS. With increase in Al2O3/Py mole ratio, PPy-Al2O3 coatings tend to exhibit a better corrosion resistance ability.

  10. Rapid fabrication of Al2O3 encapsulations for organic electronic devices

    NASA Astrophysics Data System (ADS)

    Ali, Kamran; Ali, Junaid; Mehdi, Syed Murtuza; Choi, Kyung-Hyun; An, Young Jin

    2015-10-01

    Organic electronics have earned great reputation in electronic industry yet they suffer technical challenges such as short lifetimes and low reliability because of their susceptibility to water vapor and oxygen which causes their fast degradation. This paper report on the rapid fabrication of Al2O3 encapsulations through a unique roll-to-roll atmospheric atomic layer deposition technology (R2R-AALD) for the life time enhancement of organic poly (4-vinylphenol) (PVP) memristor devices. The devices were then categorized into two sets. One was processed with R2R-AALD Al2O3 encapsulations at 50 °C and the other one was kept as un-encapsulated. The field-emission scanning electron microscopy (FESEM) results revealed that pin holes and other irregularities in PVP films with average arithmetic roughness (Ra) of 9.66 nm have been effectively covered by Al2O3 encapsulation having Ra of 0.92 nm. The X-ray photoelectron spectroscopy XPS spectrum for PVP film showed peaks of C 1s and O 1s at the binding energies of 285 eV and 531 eV, respectively. The respective appearance of Al 2p, Al 2s, and O 1s peaks at the binding energies of 74 eV, 119 eV, and 531 eV, confirms the fabrication of Al2O3 films. Electrical current-voltage (I-V) measurements confirmed that the Al2O3 encapsulation has a huge influence on the performance, robustness and life time of memristor devices. The Al2O3 encapsulated memristor performed with superior stability for four weeks whereas the un-encapsulated devices could only last for one week. The performance of encapsulated device had been promising after being subjected to bending test for 100 cycles and the variations in its stability were of minor concern confirming the mechanical robustness and flexibility of the devices.

  11. Data of ALD Al2O3 rear surface passivation, Al2O3 PERC cell performance, and cell efficiency loss mechanisms of Al2O3 PERC cell.

    PubMed

    Huang, Haibing; Lv, Jun; Bao, Yameng; Xuan, Rongwei; Sun, Shenghua; Sneck, Sami; Li, Shuo; Modanese, Chiara; Savin, Hele; Wang, Aihua; Zhao, Jianhua

    2017-04-01

    This data article is related to the recently published article '20.8% industrial PERC solar cell: ALD Al2O3 rear surface passivation, efficiency loss mechanisms analysis and roadmap to 24%' (Huang et al., 2017) [1]. This paper is about passivated emitter and rear cell (PERC) structures and it describes the quality of the Al2O3 rear-surface passivation layer deposited by atomic layer deposition (ALD), in relation to the processing parameters (e.g. pre-clean treatment, deposition temperature, growth per cycle, and film thickness) and to the cell efficiency loss mechanisms. This dataset is made public in order to contribute to the limited available public data on industrial PERC cells, to be used by other researchers.

  12. Al-Al2O3-Pd junction hydrogen sensor

    NASA Astrophysics Data System (ADS)

    Okuyama, K.; Takinami, N.; Chiba, Y.; Ohshima, S.; Kambe, S.

    1994-07-01

    Al-Al2O3-Pd MIM (metal insulator metal) junctions fabricated on a glass substrate were tested as hydrogen sensors. The I-V (current versus voltage) characteristics of the junctions were measured at room temperature in a vacuum of 10-5 Torr and in H2 gas of 10-2-100 Torr. A significant increase in the current was observed upon introduction of H2 gas. This phenomenon is believed to occur due to the work function lowering of the hydrogen-absorbed Pd top electrode. The rise time was on the order of minutes, while the recovery time when hydrogen was purged was more than 20 h. However, when the junction was placed in an oxidizing ambient such as air, the recovery time was drastically reduced to the order of minutes, indicating that the device is operative as a hydrogen sensor in the atmospheric ambient. Hydrogen adsorption and desorption behavior of the Pd film was also investigated using a Pd coated quartz microbalance, and the results explained the current response of the Pd MIM junction to hydrogen in the presence of oxygen.

  13. Al2O3 e-Beam Evaporated onto Silicon (100)/SiO2, by XPS

    SciTech Connect

    Madaan, Nitesh; Kanyal, Supriya S.; Jensen, David S.; Vail, Michael A.; Dadson, Andrew; Engelhard, Mark H.; Samha, Hussein; Linford, Matthew R.

    2013-09-25

    We report the XPS characterization of a thin film of Al2O3 (35 nm) deposited via e-beam evaporation onto silicon (100). The film was characterized with monochromatic Al Ka radiation. An XPS survey scan, an Al 2p narrow scan, and the valence band spectrum were collected. The Al2O3 thin film is used as a diffusion barrier layer for templated carbon nanotube (CNT) growth in the preparation of microfabricated thin layer chromatography plates.

  14. Photochemistry of the α-Al2O3-PETN interface

    DOE PAGES

    Tsyshevsky, Roman V.; Zverev, Anton; Mitrofanov, Anatoly; ...

    2016-02-29

    Optical absorption measurements are combined with electronic structure calculations to explore photochemistry of an α-Al2O3-PETN interface formed by a nitroester (pentaerythritol tetranitrate, PETN, C5H8N4O12) and a wide band gap aluminum oxide (α-Al2O3) substrate. The first principles modeling is used to deconstruct and interpret the α-Al2O3-PETN absorption spectrum that has distinct peaks attributed to surface F0-centers and surfacePETN transitions. We predict the low energy α-Al2O3 F0-centerPETN transition, producing the excited triplet state, and α-Al2O3 F-0-centerPETN charge transfer, generating the PETN anion radical. This implies that irradiation by commonly used lasers can easily initiate photodecomposition of both excited and charged PETN atmore » the interface. As a result, the feasible mechanism of the photodecomposition is proposed.« less

  15. NMR Spectroscopy of the Hydrated Layer of Composite Particles Based on Nanosized Al2O3 and Vitreous Humor

    NASA Astrophysics Data System (ADS)

    Turov, V. V.; Gerashchenko, I. I.; Markina, A. I.

    2013-11-01

    The hydrated layer of composite particles prepared using Al2O3 and cattle vitreous humor was investigated using NMR spectroscopy. It was found that water bound to Al2O3 nanoparticles was present in the form of clusters with different degrees of association and energies of interaction with the surface. Water bound to the surface of the Al2O3/vitreous humor composite became more uniform upon immobilization of vitreous humor components on the surface of the Al2O3. With this, the clusters of adsorbed water had characteristics that were close to those found in air and weakly polar CHCl3 media. Addition of polar CH3CN led to the formation of very small water clusters. PMR spectra of the surface of the Al2O3/vitreous humor composite in the presence of trifluoroacetic acid differentiated four types of hydrated structures that differed in the degree of water association.

  16. Synthesis and thermal characterization of Al2O3 nanoparticles

    NASA Astrophysics Data System (ADS)

    Ismardi, A.; Rosadi, O. M.; Kirom, M. R.; Syarif, D. G.

    2016-11-01

    Al2O3 nanoparticle has been successfully synthesized using sol gel method from AlCl3. The obtained nanoparticles was then characterized for grain size measurement, the size of nanoparticles was 6 nm by using surface area meter (SAM) and Transmission Electron Microscopy (TEM). The crystallinity property of the product was then checked with XRD spectroscopy, the result shows that the diffraction peaks were match with the 10-0425 JCPDS database. Thermal property of the Al2O3 nanoparticles was then studied by mixing it with engine base fluid as nanofluid. The usage of nanofluid was expected to be heat absorber and woulo increase cooling process in cooling machine. The results showed that cooling time increases when the concentration of nanofluid was increased. Finally, it is concluded that thermal property of Al2O3 was studied and applicable to be mixed with engine coolant of cooler machine to reduce cooling time process.

  17. Microstructural development of protective Al2O3 scales

    NASA Technical Reports Server (NTRS)

    Smialek, J. L.

    1984-01-01

    Microstructural characteristics of Al2O3 scales grown as protective coatings on NiCrAl alloys used in jet engines are described. The alloys were pure or doped with 0.3 percent Zr or Y and oxidized in 1 atm air at 1100 C for 0.1, 1 or 20.0 hr. The scales were then examined under a microscope. Transient epitaxial scales, formed during the 0.1 hr treatment and containing Ni, Cr and Al, consisted of a mosaic of subgrains and precipitates of different phases. The Y and Zr dopants had no effect on the nucleation site locations. The appearance of intergranular porosity at 0.1 hr was exacerbated after the 1 hr treatment. A bimodal void distribution appeared after 20 hr, when no porosity was evident. The detection of local areas of preferred orientation is taken as a spur to further studies of scale growth to gain control of the grain size or even to produce single crystal scales.

  18. A study of planar structures formed on the modified Al2O3 surfaces determining the topology of superconducting elements during YBa2Cu3O7- d deposition

    NASA Astrophysics Data System (ADS)

    Masterov, D. V.; Pavlov, S. A.; Parafin, A. E.; Yunin, P. A.

    2016-06-01

    We investigate the structural and electrical properties of planar superconducting structures based on the YBa2Cu3O7- d (YBCO) epitaxial films obtained by preliminary modification of the substrate surface. A special master mask was formed on the substrates, so that, at the standard YBCO film deposition onto such a substrate, an insulator layer grew in the modified areas and a superconducting film, in the unmodified ones. Thus, the planar superconducting structure of a desired topology was formed, and the YBCO deposition finished the process. Using this technique, YBCO bridges with widths of 4, 10, and 50 μm on films of different thicknesses and a planar inductive coil were formed. The superconducting transition temperature of the bridges was about 90 K, and the critical current density at a temperature of 77 K was up to 3 MA/cm2. The Q factor of the planar inductive coil at a frequency of 85 MHz was 53000 at a temperature of 77 K.

  19. Process Capability Analysis of Vacuum Moulding for Development of Al-Al2O3 MMC

    NASA Astrophysics Data System (ADS)

    Singh, R.

    2013-01-01

    The purpose of the present study is to investigate process capability of vacuum moulding (VM) for development of Al-Al2O3 metal matrix composite (MMC). Starting from the identification of component, prototypes were prepared (with three different input parameters namely: vacuum pressure; component volume and sand grit size to give output in form of dimensional accuracy). Measurements on the coordinate measuring machine helped in calculating the dimensional tolerances of the Al-Al2O3 MMC prepared. Some important mechanical properties were also compared to verify the suitability of the components. Final components produced are acceptable as per ISO standard UNI EN 20286-I (1995). The results of study suggest that VM process lies in ±4.5 sigma (σ) limit as regard to dimensional accuracy of Al-Al2O3 MMC is concerned. This process ensures rapid production of pre-series technological prototypes and proof of concept at less production cost and time.

  20. Mechanism for converting Al2O3-containing borate glass to hydroxyapatite in aqueous phosphate solution.

    PubMed

    Zhao, Di; Huang, Wenhai; Rahaman, Mohamed N; Day, Delbert E; Wang, Deping

    2009-05-01

    The effect of replacing varying amounts (0-2.5 mol.%) of B2O3 with Al2O3 in a borate glass on (1) the conversion of the glass to HA in an aqueous phosphate solution and (2) the compressive strength of the as-formed HA product was investigated. Samples of each glass (10 x 10 x 8 mm) were placed in 0.25 M K2HPO4 solution at 60 degrees C, and the conversion kinetics to HA were determined from the weight loss of the glass and the pH of the solution. The structure and composition of the solid reaction products were characterized using X-ray diffraction, Fourier transform infrared spectroscopy and scanning electron microscopy. While the conversion rate of the glass to HA decreased considerably with increasing Al2O3 content, the microstructure of the HA product became denser and the compressive strength of the HA product increased. The addition of SiO2 to the Al2O3-containing borate glass reversed the deterioration of the conversion rate, and produced a further improvement in the strength of the HA product. The compressive strength of the HA formed from the borate glass with 2.5 mol.% Al2O3 and 5 mol.% SiO2 was 11.1 +/- 0.2 MPa, which is equal to the highest strengths reported for trabecular bone. The results indicated that simultaneous additions of Al2O3 and SiO2 could be used to control the bioactivity of the borate glass and to enhance the mechanical strength of the HA product. Furthermore, the HA product formed from the glass containing both SiO2 and Al2O3 could be applied to bone repair.

  1. Effect of AL2O3 and TiO2 nanoparticles on aquatic organisms

    NASA Astrophysics Data System (ADS)

    Gosteva, I.; Morgalev, Yu; Morgaleva, T.; Morgalev, S.

    2015-11-01

    Environmental toxicity of aqueous disperse systems of nanoparticles of binary compounds of titanium dioxides (with particle size Δ50=5 nm, Δ50=50 nm, Δ50=90 nm), aluminum oxide alpha-forms (Δ50=7 nm and Δ50=70 nm) and macro forms (TiO2 Δ50=350 nm, Al2O3 A50=4000 nm) were studied using biological testing methods. The bioassay was performed using a set of test organisms representing the major trophic levels. We found the dependence of the toxic effect concentration degree of nTiO2 and nAl2O3 on the fluorescence of the bacterial biosensor "Ekolyum", the chemotactic response of ciliates Paramecium caudatum, the growth of unicellular algae Chlorella vulgaris Beijer and mortality of entomostracans Daphnia magna Straus. We revealed the selective dependence of nTiO2 and nAl2O3 toxicity on the size, concentration and chemical nature of nanoparticles. The minimal concentration causing an organism's response on nTiO2 and nAl2O3 effect depends on the type of the test- organism and the test reaction under study. We specified L(E)C50 and acute toxicity categories for all the studied nanoparticles. We determined that nTiO2 (Δ50=5 nm) belong to the category «Acute toxicity 1», nTiO2 (A50=90 nm) and nAl2O3 (Δ50=70 nm) - to the category «Acute toxicity 2», nAl2O3 (Δ50=7 nm) - to the category «Acute toxicity 3». No acute toxicity was registered for nTiO2 (Δ50=50 nm) and macro form TiO2.

  2. Study of the KNO3-Al2O3 system by differential scanning calorimetry

    NASA Astrophysics Data System (ADS)

    Amirov, A. M.; Gafurov, M. M.; Rabadanov, K. Sh.

    2016-09-01

    The structural and the thermodynamic properties of potassium nitrate KNO3 and its composites with nanosized aluminum oxide Al2O3 have been studied by differential scanning calorimetry. It has been found that an amorphous phase forms in composites (1- x)KNO3- x Al2O3. The thermal effect corresponding to this phase has been observed at 316°C. It has been found that the phase transition heats of potassium nitrate decreased as the aluminum oxide fraction increased.

  3. Sulfation and Desulfation Behavior of Pt-BaO/MgO-Al2O3 NOx Storage Reduction Catalyst.

    PubMed

    Jeong, Soyeon; Kim, Do Heui

    2016-05-01

    The comparative study between Pt-BaO/Al2O3 and Pt-BaO/MgO-Al2O3 gives the information about the effect of MgO addition to Al2O3 support on the sulfation and desulfation behavior of Pt-BaO/MgO-Al2O3 NOx storage reduction catalyst. The sulfated two samples were analyzed by using element analysis (EA), X-ray diffraction (XRD), H2 temperature programmed reaction (H2 TPRX) and NOx uptake measurement. The amount of sulfur uptake on 2 wt% Pt-20 wt% BaO/Al2O3 and 2 wt% Pt-20 wt% BaO/MgO-Al2O3 are almost identical as 0.45 and 0.40 of S/Ba, respectively, which yields the drastic decrease in NOx uptake for both sulfated samples. However, after desulfa- tion with H2 at 600 degrees C, the residual sulfur amount on MgO-Al2O3 supported catalyst is three times larger than that on Al2O3 supported one, indicating that sulfur species formed on the former are more stable than those on the latter. It is also well corresponding to the H2 TPRX results where the main H2S peak from MgO-Al2O3 supported sample is observed at higher temperature than Al2O3 supported one, resulting in the lower NOx uptake activity of former sample than the latter one. Meanwhile, after desulfation of MgO-Al2O3 supported sample at 700 degrees C and 800 degrees C, the activity is recovered more significantly due to the removal of the large amount of sulfur while Al2O3 supported one decreases monotonically due to the sintering of Pt crystallite and the formation of BaAl2O4 phase. It is summarized that MgO-Al2O3 supported catalyst enhances the thermal stability of the catalyst, however, forms the stable sulfate species, which needs to be improved to develop the more sulfur resistant NSR catalyst system.

  4. On the Structural and Chemical Characteristics of Co/Al2O3/graphene Interfaces for Graphene Spintronic Devices.

    PubMed

    Canto, Bárbara; Gouvea, Cristol P; Archanjo, Bráulio S; Schmidt, João E; Baptista, Daniel L

    2015-09-23

    We report a detailed investigation of the structural and chemical characteristics of thin evaporated Al2O3 tunnel barriers of variable thickness grown onto single-layer graphene sheets. Advanced electron microscopy and spectrum-imaging techniques were used to investigate the Co/Al2O3/graphene/SiO2 interfaces. Direct observation of pinhole contacts was achieved using FIB cross-sectional lamellas. Spatially resolved EDX spectrum profiles confirmed the presence of direct point contacts between the Co layer and the graphene. The high surface diffusion properties of graphene led to cluster-like Al2O3 film growth, limiting the minimal possible thickness for complete barrier coverage onto graphene surfaces using standard Al evaporation methods. The results indicate a minimum thickness of nominally 3 nm Al2O3, resulting in a 0.6 nm rms rough film with a maximum thickness reaching 5 nm.

  5. On the Structural and Chemical Characteristics of Co/Al2O3/graphene Interfaces for Graphene Spintronic Devices

    PubMed Central

    Canto, Bárbara; Gouvea, Cristol P.; Archanjo, Bráulio S.; Schmidt, João E.; Baptista, Daniel L.

    2015-01-01

    We report a detailed investigation of the structural and chemical characteristics of thin evaporated Al2O3 tunnel barriers of variable thickness grown onto single-layer graphene sheets. Advanced electron microscopy and spectrum-imaging techniques were used to investigate the Co/Al2O3/graphene/SiO2 interfaces. Direct observation of pinhole contacts was achieved using FIB cross-sectional lamellas. Spatially resolved EDX spectrum profiles confirmed the presence of direct point contacts between the Co layer and the graphene. The high surface diffusion properties of graphene led to cluster-like Al2O3 film growth, limiting the minimal possible thickness for complete barrier coverage onto graphene surfaces using standard Al evaporation methods. The results indicate a minimum thickness of nominally 3 nm Al2O3, resulting in a 0.6 nm rms rough film with a maximum thickness reaching 5 nm. PMID:26395513

  6. Epitaxial growth and electrochemical transfer of graphene on Ir(111)/α-Al2O3(0001) substrates

    NASA Astrophysics Data System (ADS)

    Koh, Shinji; Saito, Yuta; Kodama, Hideyuki; Sawabe, Atsuhito

    2016-07-01

    Low-pressure chemical vapor deposition growth of graphene on Iridium (Ir) layers epitaxially deposited on α-Al2O3 (0001) substrates was investigated. The X-ray diffraction, Raman and reflection high energy electron diffraction characterizations revealed that graphene films were epitaxially grown on Ir(111) layers, and the in-plane epitaxial relationship between graphene, Ir(111), and α-Al2O3(0001) was graphene ⟨ 1 1 ¯ 00 ⟩//Ir⟨ 11 2 ¯ ⟩//α-Al2O3⟨ 11 2 ¯ 0 ⟩. The graphene on Ir(111) was electrochemically transferred onto SiO2/Si substrates. We also demonstrated the reuse of the Ir(111)/α-Al2O3(0001) substrates in multiple growth and transfer cycles.

  7. Crystallization kinetics of BaO-Al2O3-SiO2 glasses

    NASA Technical Reports Server (NTRS)

    Bansal, Narottam P.; Hyatt, Mark J.

    1988-01-01

    Barium aluminosilicate glasses are being investigated as matrix materials in high-temperature ceramic composites for structural applications. Kinetics of crystallization of two refractory glass compositions in the barium aluminosilicate system were studied by differential thermal analysis (DTA), X-ray diffraction (XRD), and scanning electron microscopy (SEM). From variable heating rate DTA, the crystallization activation energies for glass compositions (wt percent) 10BaO-38Al2O3-51SiO2-1MoO3 (glass A) and 39BaO-25Al2O3-35SiO2-1MoO3 (glass B) were determined to be 553 and 558 kJ/mol, respectively. On thermal treatment, the crystalline phases in glasses A and B were identified as mullite (3Al2O3-2SiO2) and hexacelsian (BaO-Al2O3-2SiO2), respectively. Hexacelsian is a high-temperature polymorph which is metastable below 1590 C. It undergoes structural transformation into the orthorhombic form at approximately 300 C accompanied by a large volume change which is undesirable for structural applications. A process needs to be developed where stable monoclinic celsian, rather than hexacelsian, precipitates out as the crystal phase in glass B.

  8. Effect of Heat Treatment on the Microstructure and Microhardness of Nanostructural Al2O3 Coatings

    NASA Astrophysics Data System (ADS)

    Kovaleva, M.; Tyurin, Yu.; Vasilik, N.; Kolisnichenko, O.; Prozorova, M.; Arseenko, M.; Sirota, V.; Pavlenko, I.

    2014-10-01

    Nanostructural Al2O3 coatings were formed on a steel substrate surface using a multichamber detonation sprayer. The Al2O3 coatings were characterized by a dense microstructure with porosity below 1% and hardness of 1300 ± 25 HV0.3. The transition layer between the coating and substrate was up to 15 μm thick, containing Fe-Al-type intermetallic compounds (FeAl3, Fe2Al5). Postdeposition heat treatment of the samples at 850 °C for 3 h was carried out in air and argon environments. The effect of heat treatment on the microstructure and microhardness of the Al2O3 coatings was investigated by optical microscopy, scanning and transmission electron microscopy, scanning probe microscopy, x-ray phase analysis, and Vickers hardness testing. A positive impact of postcoating heat treatment on the coating microstructure and microhardness was observed. Heat treatment resulted in an increase in the coating hardness from 1300, to 1350 ± 25 HV0.3 and 1600 ± 25 HV0.3 after annealing in air and argon, respectively. Heat treatment in argon led to a more significant increase in the α-Al2O3 phase from 47 to 81%.

  9. Vacuum ultraviolet thin films. I - Optical constants of BaF2, CaF2, LaF3, MgF2, Al2O3, HfO2, and SiO2 thin films. II - Vacuum ultraviolet all-dielectric narrowband filters

    NASA Technical Reports Server (NTRS)

    Zukic, Muamer; Torr, Douglas G.; Spann, James F.; Torr, Marsha R.

    1990-01-01

    An iteration process matching calculated and measured reflectance and transmittance values in the 120-230 nm VUV region is presently used to ascertain the optical constants of bulk MgF2, as well as films of BaF2, CaF2, LaF3, MgF2, Al2O3, HfO2, and SiO2 deposited on MgF2 substrates. In the second part of this work, a design concept is demonstrated for two filters, employing rapidly changing extinction coefficients, centered at 135 nm for BaF2 and 141 nm for SiO2. These filters are shown to yield excellent narrowband spectral performance in combination with narrowband reflection filters.

  10. Transparent and flexible capacitors based on nanolaminate Al2O3/TiO2/Al2O3.

    PubMed

    Zhang, Guozhen; Wu, Hao; Chen, Chao; Wang, Ti; Yue, Jin; Liu, Chang

    2015-01-01

    Transparent and flexible capacitors based on nanolaminate Al2O3/TiO2/Al2O3 dielectrics have been fabricated on indium tin oxide-coated polyethylene naphthalate substrates by atomic layer deposition. A capacitance density of 7.8 fF/μm(2) at 10 KHz was obtained, corresponding to a dielectric constant of 26.3. Moreover, a low leakage current density of 3.9 × 10(-8) A/cm(2) at 1 V has been realized. Bending test shows that the capacitors have better performances in concave conditions than in convex conditions. The capacitors exhibit an average optical transmittance of about 70% in visible range and thus open the door for applications in transparent and flexible integrated circuits.

  11. Exploring metalorganic chemical vapor deposition of Si-alloyed Al2O3 dielectrics using disilane

    NASA Astrophysics Data System (ADS)

    Chan, Silvia H.; Keller, Stacia; Koksaldi, Onur S.; Gupta, Chirag; DenBaars, Steven P.; Mishra, Umesh K.

    2017-04-01

    The alloying of Al2O3 films with Si is a promising route to improve gate dielectric properties in Si- and wide-bandgap- based MOS devices. Here we present a comprehensive investigation of alloyed film growth by metalorganic chemical vapor deposition (MOCVD) using trimethylaluminum, disilane, and oxygen precursors over a variety of temperature and flow conditions. Binary growth rates of Al2O3 and SiO2 were evaluated to explain the aggregate growth kinetics of Si-alloyed Al2O3 films, and refractive indices were used to monitor Si incorporation efficiencies. The temperature dependence of the reaction rate of disilane with oxygen was found to be similar to that of trimethylaluminum and oxygen, leading to well-behaved deposition behavior in the kinetic and mass-transport controlled growth regimes. Compositional predictability and stability was achieved over a wider growth space with disilane-based growths as compared to previous work, which used silane as the Si precursor instead. In situ (Al,Si)O/n-GaN MOS gate stacks were grown and showed increasing reduction of net positive fixed charges with higher Si composition.

  12. Effect of Al2O3 on the Viscosity and Structure of CaO-SiO2-MgO-Al2O3-FetO Slags

    NASA Astrophysics Data System (ADS)

    Wang, Zhanjun; Sun, Yongqi; Sridhar, Seetharaman; Zhang, Mei; Guo, Min; Zhang, Zuotai

    2015-04-01

    The present paper provided a fundamental investigation on the effect of Al2O3 on the viscosity and structure of CaO-SiO2-MgO-Al2O3-FetO slags for the purpose of efficiently recycling the valuable elements from the steelmaking slags. The results show that the viscosity of CaO-SiO2-Al2O3-MgO-FetO slags slightly increases with increasing Al2O3 content. The degree of the polymerization (DOP) of quenched slags, determined from Raman spectra and magic angle spinning-nuclear magnetic resonance, is also found to increase with increasing Al2O3 content. It can be deduced that the increasing DOP can promote the formation of gehlenite phase (Ca2Al2SiO7), thus facilitating the formation of higher phosphorous (or vanadium) contained solid solution ( n'Ca2SiO4·Ca3((P or V)O4)2). As Al2O3 content increases up to a specific value, the charge compensating ions which present near [AlO4]-tetrahedra and [FeO4]-tetrahedra are not fully supplied due to the scarcity of Ca2+. In this case, the existing Fe3+ in the melt cannot completely form [FeO4]-tetrahedra and part of Fe3+ would form [FeO6]-octahedra to substitute Ca2+ to modify the slags.

  13. Thermal expansion and elastic anisotropy in single crystal Al2O3 and SiC reinforcements

    NASA Technical Reports Server (NTRS)

    Salem, Jonathan A.; Li, Zhuang; Bradt, Richard C.

    1994-01-01

    In single crystal form, SiC and Al2O3 are attractive reinforcing components for high temperature composites. In this study, the axial coefficients of thermal expansion and single crystal elastic constants of SiC and Al2O3 were used to determine their coefficients of thermal expansion and Young's moduli as a function of crystallographic orientation and temperature. SiC and Al2O3 exhibit a strong variation of Young's modulus with orientation; however, their moduli and anisotropies are weak functions of temperature below 1000 C. The coefficients of thermal expansion exhibit significant temperature dependence, and that of the non-cubic Al2O3 is also a function of crystallographic orientation.

  14. Bovine serum albumin adsorption onto colloidal Al2O3 particles: a new model based on zeta potential and UV-vis measurements.

    PubMed

    Rezwan, Kurosch; Meier, Lorenz P; Rezwan, Mandana; Vörös, Janos; Textor, Marcus; Gauckler, Ludwig J

    2004-11-09

    We investigated the adsorption of bovine serum albumin (BSA) on colloidal Al2O3 particles in an aqueous environment. Changes in the zeta potential of the Al2O3 particles upon the adsorption of BSA were measured using an electro-acoustic technique. The mass of protein adsorbed was determined by using UV-vis spectroscopy. The change of the isoelectric point of the Al2O3 powder-protein suspension was found to be a function of adsorbed protein mass. It was shown that approximately one monolayer of BSA was needed to fully mask the surface and to compromise the charge of Al2O3. From titration experiments it follows that about 30-36% of the negatively charged groups of the protein form bonds with the protonated and charged Al2O3 surface. On the basis of our observations we introduced a new adsorption model for BSA on Al2O3 particles.

  15. Atomic layer deposition of highly-doped Er:Al2O3 and Tm:Al2O3 for silicon-based waveguide amplifiers (Conference Presentation)

    NASA Astrophysics Data System (ADS)

    Roenn, John; Karvonen, Lasse; Pyymäki-Perros, Alexander; Peyghambarian, Nasser; Lipsanen, Harri; Säynätjoki, Antti; Sun, Zhipei

    2016-05-01

    Recently, rare-earth doped waveguide amplifiers (REDWAs) have drawn significant attention as a promising solution to on-chip amplification of light in silicon photonics and integrated optics by virtue of their high excited state lifetime (up to 10 ms) and broad emission spectrum (up to 200 nm) at infrared wavelengths. In the family of rare-earths, at least erbium, holmium, thulium, neodymium and ytterbium have been demonstrated to be good candidates for amplifier operation at moderate concentrations (< 0.1 %). However, efficient amplifier operation in REDWAs is a very challenging task because high concentration of ions (<0.1%) is required in order to produce reasonable amplification over short device length. Inevitably, high concentration of ions leads to energy-transfer between neighboring ions, which results as decreased gain and increased noise in the amplifier system. It has been shown that these energy-transfer mechanisms in highly-doped gain media are inversely proportional to the sixth power of the distance between the ions. Therefore, novel fabrication techniques with the ability to control the distribution of the rare-earth ions within the gain medium are urgently needed in order to fabricate REDWAs with high efficiency and low noise. Here, we show that atomic layer deposition (ALD) is an excellent technique to fabricate highly-doped (<1%) RE:Al2O3 gain materials by using its nanoscale engineering ability to delicately control the incorporation of RE ions during the deposition. In our experiment, we fabricated Er:Al2O3 and Tm:Al2O3 thin films with ALD by varying the concentration of RE ions from 1% to 7%. By measuring the photoluminescence response of the fabricated samples, we demonstrate that it is possible to incorporate up to 5% of either Er- or Tm-ions in Al2O3 host before severe quenching occurs. We believe that this technique can be extended to other RE ions as well. Therefore, our results show the exceptionality of ALD as a deposition technique for

  16. Al2O3-based nanofluids: a review

    PubMed Central

    2011-01-01

    Ultrahigh performance cooling is one of the important needs of many industries. However, low thermal conductivity is a primary limitation in developing energy-efficient heat transfer fluids that are required for cooling purposes. Nanofluids are engineered by suspending nanoparticles with average sizes below 100 nm in heat transfer fluids such as water, oil, diesel, ethylene glycol, etc. Innovative heat transfer fluids are produced by suspending metallic or nonmetallic nanometer-sized solid particles. Experiments have shown that nanofluids have substantial higher thermal conductivities compared to the base fluids. These suspended nanoparticles can change the transport and thermal properties of the base fluid. As can be seen from the literature, extensive research has been carried out in alumina-water and CuO-water systems besides few reports in Cu-water-, TiO2-, zirconia-, diamond-, SiC-, Fe3O4-, Ag-, Au-, and CNT-based systems. The aim of this review is to summarize recent developments in research on the stability of nanofluids, enhancement of thermal conductivities, viscosity, and heat transfer characteristics of alumina (Al2O3)-based nanofluids. The Al2O3 nanoparticles varied in the range of 13 to 302 nm to prepare nanofluids, and the observed enhancement in the thermal conductivity is 2% to 36%. PMID:21762528

  17. Al2O3-based nanofluids: a review.

    PubMed

    Sridhara, Veeranna; Satapathy, Lakshmi Narayan

    2011-07-16

    Ultrahigh performance cooling is one of the important needs of many industries. However, low thermal conductivity is a primary limitation in developing energy-efficient heat transfer fluids that are required for cooling purposes. Nanofluids are engineered by suspending nanoparticles with average sizes below 100 nm in heat transfer fluids such as water, oil, diesel, ethylene glycol, etc. Innovative heat transfer fluids are produced by suspending metallic or nonmetallic nanometer-sized solid particles. Experiments have shown that nanofluids have substantial higher thermal conductivities compared to the base fluids. These suspended nanoparticles can change the transport and thermal properties of the base fluid. As can be seen from the literature, extensive research has been carried out in alumina-water and CuO-water systems besides few reports in Cu-water-, TiO2-, zirconia-, diamond-, SiC-, Fe3O4-, Ag-, Au-, and CNT-based systems. The aim of this review is to summarize recent developments in research on the stability of nanofluids, enhancement of thermal conductivities, viscosity, and heat transfer characteristics of alumina (Al2O3)-based nanofluids. The Al2O3 nanoparticles varied in the range of 13 to 302 nm to prepare nanofluids, and the observed enhancement in the thermal conductivity is 2% to 36%.

  18. The Influence of Al2O3 Powder Morphology on the Properties of Cu-Al2O3 Composites Designed for Functionally Graded Materials (FGM)

    NASA Astrophysics Data System (ADS)

    Strojny-Nędza, Agata; Pietrzak, Katarzyna; Węglewski, Witold

    2016-08-01

    In order to meet the requirements of an increased efficiency applying to modern devices and in more general terms science and technology, it is necessary to develop new materials. Combining various types of materials (such as metals and ceramics) and developing composite materials seem to be suitable solutions. One of the most interesting materials includes Cu-Al2O3 composite and gradient materials (FGMs). Due to their potential properties, copper-alumina composites could be used in aerospace industry as rocket thrusters and components in aircraft engines. The main challenge posed by copper matrix composites reinforced by aluminum oxide particles is obtaining the uniform structure with no residual porosity (existing within the area of the ceramic phase). In the present paper, Cu-Al2O3 composites (also in a gradient form) with 1, 3, and 5 vol.% of aluminum oxide were fabricated by the hot pressing and spark plasma sintering methods. Two forms of aluminum oxide (αAl2O3 powder and electrocorundum) were used as a reinforcement. Microstructural investigations revealed that near fully dense materials with low porosity and a clear interface between the metal matrix and ceramics were obtained in the case of the SPS method. In this paper, the properties (mechanical, thermal, and tribological) of composite materials were also collected and compared. Technological tests were preceded by finite element method analyses of thermal stresses generated in the gradient structure, and additionally, the role of porosity in the formation process of composite properties was modeled. Based on the said modeling, technological conditions for obtaining FGMs were proposed.

  19. Enhanced thermal stability of carbon nanotubes by plasma surface modification in Al2O3 composites

    NASA Astrophysics Data System (ADS)

    Cho, Hoonsung; Shi, Donglu; Guo, Yan; Lian, Jie; Ren, Zhifeng; Poudel, Bed; Song, Yi; Abot, Jandro L.; Singh, Dileep; Routbort, Jules; Wang, Lumin; Ewing, Rodney C.

    2008-10-01

    A plasma polymerization method was employed to deposit an ultrathin pyrrole film of 3 nm onto the surfaces of single wall carbon nanotubes (SWCNTs) and Al2O3 nanoparticles for developing high-strength nanocomposites. The surfaces of plasma coated SWCNTs and Al2O3 nanoparticles were studied by high resolution transmission electron microscopy (TEM) and time-of-flight secondary ion mass spectroscopy. After sintering the SWCNTs-Al2O3 composites at different temperatures (maximum of 1200 °C), the thermal stability of plasma-coated SWCNTs was significantly increased, compared to their uncoated counterparts. After hot-press sintering, the SWCNTs without plasma coating were essentially decomposed into amorphous clusters in the composites, leading to degraded mechanical properties. However, under the same sintering conditions, the plasma surface modified SWCNTs were well preserved and distributed in the composite matrices. The effects of plasma surface coating on the thermal stability of SWCNTs and mechanical behavior of the nanocomposites are discussed.

  20. Atomic layer deposition of Al2O3 on NF3-pre-treated graphene

    NASA Astrophysics Data System (ADS)

    Junige, Marcel; Oddoy, Tim; Yakimova, Rositsa; Darakchieva, Vanya; Wenger, Christian; Lupina, Grzegorz; Kitzmann, Julia; Albert, Matthias; Bartha, Johann W.

    2015-06-01

    Graphene has been considered for a variety of applications including novel nanoelectronic device concepts. However, the deposition of ultra-thin high-k dielectrics on top of graphene has still been challenging due to graphene's lack of dangling bonds. The formation of large islands and leaky films has been observed resulting from a much delayed growth initiation. In order to address this issue, we tested a pre-treatment with NF3 instead of XeF2 on CVD graphene as well as epitaxial graphene monolayers prior to the Atomic Layer Deposition (ALD) of Al2O3. All experiments were conducted in vacuo; i. e. the pristine graphene samples were exposed to NF3 in the same reactor immediately before applying 30 (TMA-H2O) ALD cycles and the samples were transferred between the ALD reactor and a surface analysis unit under high vacuum conditions. The ALD growth initiation was observed by in-situ real-time Spectroscopic Ellipsometry (irtSE) with a sampling rate above 1 Hz. The total amount of Al2O3 material deposited by the applied 30 ALD cycles was cross-checked by in-vacuo X-ray Photoelectron Spectroscopy (XPS). The Al2O3 morphology was determined by Atomic Force Microscopy (AFM). The presence of graphene and its defect status was examined by in-vacuo XPS and Raman Spectroscopy before and after the coating procedure, respectively.

  1. Frustration of Negative Capacitance in Al2O3/BaTiO3 Bilayer Structure

    NASA Astrophysics Data System (ADS)

    Kim, Yu Jin; Park, Min Hyuk; Lee, Young Hwan; Kim, Han Joon; Jeon, Woojin; Moon, Taehwan; Do Kim, Keum; Jeong, Doo Seok; Yamada, Hiroyuki; Hwang, Cheol Seong

    2016-01-01

    Enhancement of capacitance by negative capacitance (NC) effect in a dielectric/ferroelectric (DE/FE) stacked film is gaining a greater interest. While the previous theory on NC effect was based on the Landau-Ginzburg-Devonshire theory, this work adopted a modified formalism to incorporate the depolarization effect to describe the energy of the general DE/FE system. The model predicted that the SrTiO3/BaTiO3 system will show a capacitance boost effect. It was also predicted that the 5 nm-thick Al2O3/150 nm-thick BaTiO3 system shows the capacitance boost effect with no FE-like hysteresis behavior, which was inconsistent with the experimental results; the amorphous-Al2O3/epitaxial-BaTiO3 system showed a typical FE-like hysteresis loop in the polarization – voltage test. This was due to the involvement of the trapped charges at the DE/FE interface, originating from the very high field across the thin Al2O3 layer when the BaTiO3 layer played a role as the NC layer. Therefore, the NC effect in the Al2O3/BaTiO3 system was frustrated by the involvement of reversible interface charge; the highly stored charge by the NC effect of the BaTiO3 during the charging period could not be retrieved during the discharging process because integral part of the polarization charge was retained within the system as a remanent polarization.

  2. Frustration of Negative Capacitance in Al2O3/BaTiO3 Bilayer Structure.

    PubMed

    Kim, Yu Jin; Park, Min Hyuk; Lee, Young Hwan; Kim, Han Joon; Jeon, Woojin; Moon, Taehwan; Kim, Keum Do; Jeong, Doo Seok; Yamada, Hiroyuki; Hwang, Cheol Seong

    2016-01-08

    Enhancement of capacitance by negative capacitance (NC) effect in a dielectric/ferroelectric (DE/FE) stacked film is gaining a greater interest. While the previous theory on NC effect was based on the Landau-Ginzburg-Devonshire theory, this work adopted a modified formalism to incorporate the depolarization effect to describe the energy of the general DE/FE system. The model predicted that the SrTiO3/BaTiO3 system will show a capacitance boost effect. It was also predicted that the 5 nm-thick Al2O3/150 nm-thick BaTiO3 system shows the capacitance boost effect with no FE-like hysteresis behavior, which was inconsistent with the experimental results; the amorphous-Al2O3/epitaxial-BaTiO3 system showed a typical FE-like hysteresis loop in the polarization - voltage test. This was due to the involvement of the trapped charges at the DE/FE interface, originating from the very high field across the thin Al2O3 layer when the BaTiO3 layer played a role as the NC layer. Therefore, the NC effect in the Al2O3/BaTiO3 system was frustrated by the involvement of reversible interface charge; the highly stored charge by the NC effect of the BaTiO3 during the charging period could not be retrieved during the discharging process because integral part of the polarization charge was retained within the system as a remanent polarization.

  3. Anormalous Optical Absorption in Porous Al_2O3 Host Matrix---Nano-Oxide Particle Nanocomposites

    NASA Astrophysics Data System (ADS)

    Zhang, Lide; Zhang, Biao; Mo, Chimei

    1996-03-01

    Porous Al_2O3 host matrix---nano-γ-Fe_2O3 particle composites (porous nanocomposite) were prepared by pyrolysis of Fe(NO_3)_39H_2O in porous nano- Al_2O3 matrix at 250^0C. Comparing with simple nanocomposites formed by mixing nano-γ-Fe_2O3 and compacting at room temperature, followed by annealing at 250^0C, the following anomalous optical behaviors were observed: for porous nanocomposite containing 5% Fe_2O_3, the aborption edge shifts obviously from 827nm to 543nm, and with increasing dopping amount of Fe_2O3 from 5% to 70%, blue shift phenomina decreases. Namely, the absorption edge moves from 543nm to 710nm. The mechanism of shift of the absorption edge is discussed.

  4. Theory of the clean and hydrogenated Al2O3(0001)-(1×1) surfaces

    NASA Astrophysics Data System (ADS)

    Felice, Rosa Di; Northrup, John E.

    1999-12-01

    We present the results of a first principles investigation of the equilibrium properties of c-plane α-Al2O3 surfaces. The stable structure for the 1×1 clean surface is Al terminated with a stoichiometric composition, while other terminations are unstable independent of surface preparation conditions. We discuss the implications of our results in the frame of possible extended reconstructions. For 1 monolayer of H coverage, we find that the preferred structure has OH dimers both perpendicular and nearly parallel to the surface. H-terminated surfaces may form in suitable preparation conditions. We discuss our results in terms of water adsorption and atomic layer epitaxy of α-Al2O3(0001).

  5. Protective Al2O3 scale formation on NbAl3-base alloys

    NASA Technical Reports Server (NTRS)

    Doychak, J.; Hebsur, M. G.

    1991-01-01

    The oxidation of NbAl3 with additions of Cr and Y was studied to determine the mechanisms of the beneficial effects of these elements upon oxidation. Cr additions to the binary NbAl3 alloy of up to 6.8 at. percent reduced the scale growth rates and promoted alpha-Al2O3 formation over much longer times relative to binary NbAl3. A major effect of Cr is to form a layer of AlNbCr at the metal/scale interface, which is inherently more oxidation-resistant than the matrix alloy in the long term. Yttrium additions to a Cr-containing alloy improved the scale growth rate and adherence and changed the scale microstructure to mimic that of a typical protective Al2O3 scale.

  6. Comparative study of the breakdown transients of thin Al2O3 and HfO2 films in MIM structures and their connection with the thermal properties of materials

    NASA Astrophysics Data System (ADS)

    Pazos, S.; Aguirre, F.; Miranda, E.; Lombardo, S.; Palumbo, F.

    2017-03-01

    In this work, the breakdown transients of A l 2 O 3 - and HfO2-based metal-insulator-metal (MIM) stacks with the same oxide thickness and identical metal electrodes were compared. Their connection with the thermal properties of the materials was investigated using alternative experimental setups. The differences and similarities between these transients in the fast and progressive breakdown regimes were assessed. According to the obtained results, A l 2 O 3 exhibits longer breakdown transients than HfO2 and requires a higher voltage to initiate a very fast current runaway across the dielectric film. This distinctive behavior is ascribed to the higher thermal conductivity of A l 2 O 3 . Overall results link the breakdown process to the thermal properties of the oxides under test rather than to dissipation effects occurring at the metal electrodes.

  7. Supermagnetism in discontinuous CoFe/Al2O3 multilayers

    NASA Astrophysics Data System (ADS)

    Bedanta, Subhankar; Kleemann, Wolfgang

    2012-06-01

    An ensemble of nanoparticles in which the interparticle magnetic interactions are sufficiently weak shows superparamagnetic (SPM) behavior as described by the Néel-Brown model. On the contrary, when inter-particle interactions are non-negligible, the system eventually shows collective behavior, which overcomes the individual anisotropy properties of the particles. At sufficiently strong interactions a magnetic nanoparticle ensemble can show superspin glass (SSG) properties similar to those of atomic spin glass systems in bulk. With further increase in concentration, but still below physical percolation, sufficiently strong interactions can be experienced to form a superferromagnetic (SFM) state. SFM domains in a non-percolated nanoparticle assembly are expected to be similar to conventional FM domains in a continuous film, with the decisive difference that the atomic spins are replaced by the superspins of the single-domain nanoparticles. In this article, we show that by varying the nominal thickness tn of the magnetic component in granular multilayers [Co80Fe20(tn)/Al2O3(3nm)]10 different types of "supermagnetism", such as superparamagnetism, superspin glass and superferromagnetism can be observed.

  8. Impurity Enhancement of Al_2O_3/Al Adhesion

    NASA Astrophysics Data System (ADS)

    Wang, Xiao-Gang; Smith, John R.; Zhang, Wenqing; Evans, Anthony

    2003-03-01

    Our first-principles computations indicate that the clean Al_2O_3/Al interface is relatively weak - weaker than bulk Al. Fracture experiments reveal that the interface is relatively strong with observed failure in bulk Al, however. This paradox is resolved via doping effects of the common impurity C. We have found that only 1/3 of a monolayer of carbon segregated to the interface can increase the work of separation by a factor of 3. The resulting strong interface is consistent with fracture experiments. It arises due to void formation in the interface, which provides low-strain sites for the carbon to segregate to. The degree of void formation is consistent with the relatively high heat of oxide formation of Al.

  9. Solid state reduction of chromium (VI) pollution for Al2O3-Cr metal ceramics application

    NASA Astrophysics Data System (ADS)

    Zhu, Hekai; Fang, Minghao; Huang, Zhaohui; Liu, Yangai; Tang, Hao; Min, Xin; Wu, Xiaowen

    2016-04-01

    Reduction of chromium (VI) from Na2CrO4 through aluminothermic reaction and fabrication of metal-ceramic materials from the reduction products have been investigated in this study. Na2CrO4 could be successfully reduced into micrometer-sized Cr particles in a flowing Ar atmosphere in presence of Al powder. The conversion ratio of Na2CrO4 to metallic Cr attained 96.16% efficiency. Al2O3-Cr metal-ceramic with different Cr content (5 wt%, 10 wt%, 15 wt%, 20 wt%) were further prepared from the reduction product Al2O3-Cr composite powder, and aluminum oxide nanopowder via pressure-less sintering. The phase composition, microstructure and mechanical properties of metal-ceramic composites were characterized to ensure the potential of the Al2O3-Cr composite powder to form ceramic materials. The highest relative density and bending strength can reach 93.4% and 205 MP, respectively. The results indicated that aluminothermic reduction of chromium (VI) for metal-ceramics application is a potential approach to remove chromium (VI) pollutant from the environment.

  10. Characteristics of ethylene glycol-Al2O3 nanofluids prepared by utilizing Al2O3 nanoparticles synthesized from local bauxite

    NASA Astrophysics Data System (ADS)

    Syarif, D. G.

    2016-11-01

    Nanoparticles of Al2O3 have been synthesized from local bauxite mineral, and ethylene glycol (EG)-Al2O3 nanofluids have been prepared. Powder Al(OOH) was extracted from local bauxite using bayer process, and heated at 600°C for 3 hours to get Al2O3 nanoparticles. XRD analyses showed that the Al2O3 nanoparticles crystallizes in γ-Al2O3 with crystallite size of 4.12 nm. The specific surface area of the ACO3 nanoparticles was 296.72 m2/gr. Viscosity of the EG-Al2O3 nanofluids was temperature dependent, and decreased with increasing temperature. The viscosity of the nanofluids increased with the concentration of the Al2O3 nanoparticles. Meanwhile, Critical Heat Flux (CHF) enhancement of the nanofluids increased with the concentration of the Al2O3 nanoparticles. The largest CHF enhancement was 54% at Al2O3 concentration of 0.095 vol %.

  11. Microstructure Investigation of Cu-Ni Base Al2O3 Nanocomposites: From Nanoparticles Synthesis to Consolidation

    NASA Astrophysics Data System (ADS)

    Ramos, M. I.; Suguihiro, N. M.; Brocchi, E. A.; Navarro, R.; Solorzano, I. G.

    2017-02-01

    Different compositions of Cu-Ni/Al2O3 nanocomposites were prepared by a chemical-based synthesis of co-formed oxides (CuO-NiO-Al2O3) nanoparticles followed by selective hydrogen reduction of the Cu and Ni oxides and finally by consolidation into pellets. The synthesized composites with both phases (metallic and oxide) containing nanoparticles in the 5 to 60 nm range have been systematically produced. Micro- and nanoscale characterization techniques were extensively employed in all stages of the process. X-ray diffraction (XRD) and transmission electron microscopy (TEM) analyses have shown a heterogeneous distribution of chemical elements resulting in the formation of Cu- and Ni-rich nanoparticles containing Al2O3 phase in a controlled low volume fraction, which later mostly dispersed between the metallic particle and, to a lesser extent, within metallic particles. After consolidation, under uniaxial pressure followed by sintering, the compacted nanocomposite observed in the transmission electron microscope (TEM) revealed that the Al2O3 have been more homogeneously distributed as such: the majority of it at the newly formed grain boundaries of the consolidated pellet and a small part of it within the metallic Cu-Ni matrix. Microhardness measurements demonstrate that dispersion of Al2O3 was successfully achieved as reinforcement phase, yielding up to 100 pct increase in hardness.

  12. Ultra-low thermal conductivity in W/Al2O3 nanolaminates.

    PubMed

    Costescu, R M; Cahill, D G; Fabreguette, F H; Sechrist, Z A; George, S M

    2004-02-13

    Atomic layer deposition and magnetron sputter deposition were used to synthesize thin-film multilayers of W/Al(2)O(3). With individual layers only a few nanometers thick, the high interface density produced a strong impediment to heat transfer, giving rise to a thermal conductivity of approximately 0.6 watts per meter per kelvin. This result suggests that high densities of interfaces between dissimilar materials may provide a route for the production of thermal barriers with ultra-low thermal conductivity.

  13. Nitridation of Al2O3 surfaces: chemical and structural change triggered by oxygen desorption.

    PubMed

    Akiyama, Toru; Saito, Yasutaka; Nakamura, Kohji; Ito, Tomonori

    2013-01-11

    We present theoretical investigations that clarify elemental nitridation processes of corundum Al2O3(0001) and (1102) surfaces. The calculations within the density functional theory framework reveal that the structures with substitutional N atoms beneath the surface are stabilized under nitridation conditions. We also find that the desorption of O atoms at the topmost layer induces outward diffusion of O atoms as well as inward diffusion of N atoms, leading to the transformation into AlN films. The kinetic Monte Carlo simulations in conjunction with density functional theory results indeed observe a dependence of these chemical and structural changes on temperature and pressure.

  14. Assimilation Behavior of Calcium Ferrite and Calcium Diferrite with Sintered Al2O3 and MgO

    NASA Astrophysics Data System (ADS)

    Long, Hongming; Wu, Xuejian; Chun, Tiejun; Di, Zhanxia; Yu, Bin

    2016-10-01

    In this study, the assimilation behaviors between calcium ferrite (CF), calcium diferrite (CF2) and sintered Al2O3, and MgO were explored by an improved sessile drop technique, and the interfacial microstructure was discussed. The results indicated that the apparent contact angles of CF slag on Al2O3 and MgO substrate were 15.7 and 5.5 deg, and the apparent contact angles of CF2 slag on Al2O3 and MgO substrate were 17.9 and 7.2 deg, respectively. Namely, CF and CF2 slag were wetting well with Al2O3 and MgO substrate. The dissolution of Al2O3 substrate into the CF and CF2 slag was found to be the driving force of the wetting process. For the CF-MgO and CF2-MgO substrate systems, CaO contrarily distributed with MgO after wetting. For the CF-MgO system, after wetting, the slag was composed of CF and C2F, and most of the Fe2O3 permeated into substrate and formed two permeating layers.

  15. Comparing the Thermodynamic Behaviour of Al(1)+ZrO2(s) to Al(1)+Al2O3(s)

    NASA Technical Reports Server (NTRS)

    Copland, Evan

    2004-01-01

    In an effort to better determine the thermodynamic properties of Al(g) and Al2O(g). the vapor in equilibrium with Al(l)+ZrO2(s) was compared to the vapor in equilibrium with Al(l)+Al2O3(s) over temperature range 1197-to-1509K. The comparison was made directly by Knudsen effusion-cell mass spectrometry with an instrument configured for a multiple effusion-cell vapor source (multi-cell KEMS). Second law enthalpies of vaporization of Al(g) and Al2O(g) together with activity measurements show that Al(l)+ZrO2(s) is thermodynamically equivalent to Al(l)+Al2O3(s), indicating Al(l) remained pure and Al2O3(s) was present in the ZrO2-cell. Subsequent observation of the Al(l)/ZrO2 and vapor/ZrO2 interfaces revealed a thin Al2O3-layer had formed, separating the ZrO2-cell from Al(l) and Al(g)+Al2O(g), effectively transforming it into an Al2O3 effusion-cell. This behavior agrees with recent observations made for Beta-NiAl(Pt) alloys measured in ZrO2 effusion-cell.

  16. The thermodynamic properties of hydrated -Al2O3 nanoparticles

    SciTech Connect

    Spencer, Elinor; Huang, Baiyu; Parker, Stewart F.; Kolesnikov, Alexander I; Ross, Dr. Nancy; Woodfield, Brian

    2013-01-01

    In this paper we report a combined calorimetric and inelastic neutron scattering (INS) study of hydrated -Al2O3 ( -alumina) nanoparticles. These complementary techniques have enabled a comprehensive evaluation of the thermodynamic properties of this technological and industrially important metal oxide to be achieved. The isobaric heat capacity (Cp) data presented herein provide further critical insights into the much-debated chemical composition of -alumina nanoparticles. Furthermore, the isochoric heat capacity (Cv) of the surface water, which is so essential to the stability of all metal-oxides at the nanoscale, has been extracted from the high-resolution INS data and differs significantly from that of ice Ih due to the dominating influence of strong surface-water interactions. This study also encompassed the analysis of four -alumina samples with differing pore diameters [4.5 (1), 13.8 (2), 17.9 (3), and 27.2 nm (4)], and the results obtained allow us to unambiguously conclude that the water content and pore size have no influence on the thermodynamic behaviour of hydrated -alumina nanoparticles.

  17. Optimization on hardness and internal stress of micro-electroformed NiCo/nano-Al2O3 composites with the constraint of low surface roughness

    NASA Astrophysics Data System (ADS)

    Hung, Shih-Yu

    2009-01-01

    In this paper, Ni-Co/nano-Al2O3 composite electroforming was used to make the metallic micro-mold for a microlens array. The microstructures require higher hardness to improve the wear resistance and lifetime. Nano-Al2O3 was applied to strengthen the Ni-Co matrix by a new micro-electroforming technique. The hardness and internal stress of Ni-Co/nano-Al2O3 composite deposit were investigated. The results showed that the hardness increased with the increasing Al2O3 content, but at the cost of deformation. Increasing the Al2O3 content in the composite was not always beneficial to the electroformed mold for microlens array fabrication. This work will concentrate on the relationship between important mechanical properties and electrolyte parameters of Ni-Co/nano-Al2O3 composite electroforming. Electrolyte parameters such as Al2O3 content, Al2O3 particle diameter, Co content, stress reducer and current density will be examined with respect to internal stress and hardness. In the present study, low stress and high hardness electroforming with the constraint of low surface roughness is carried out using SNAOA algorithm to reduce internal stress and increase service life of micro-mold during the forming process. The results show that the internal stress and the RMS roughness are only 0.54 MPa and 4.8 nm, respectively, for the optimal electrolyte parameters combination of SNAOA design.

  18. Influence of calcination temperature on the surface area of submicron-sized Al2O3 electrospun fibers

    NASA Astrophysics Data System (ADS)

    Shin, Hyeon Ung; Ramsier, Rex D.; Chase, George G.

    2016-03-01

    Submicron-sized Al2O3 fibers were formed by calcination of electrospun aluminum acetate/PVP composite fibers. At 650 °C, the fibers were amorphous. As the calcination temperature increased to 750 °C, the fibers transitioned from amorphous to 49 % crystalline gamma phase Al2O3. The crystallinity further increased with calcination temperature to 80 % gamma Al2O3 at 950 °C, but decreased above 950 °C as the crystal structure began to change to alpha phase. The fiber diameters tended to decrease as calcination temperature increased to 950 °C but increased as the alpha phase was formed at temperatures above 950 °C. Surface areas as measured by BET decreased as gamma phase crystallinity increased. Further decrease in surface area as the gamma phase crystal structure transitioned to alpha phase indicated changing internal pore structures of the fibers.

  19. Plasma-Assisted ALD of an Al2O3 Permeation Barrier Layer on Plastic

    NASA Astrophysics Data System (ADS)

    Lei, Wenwen; Li, Xingcun; Chen, Qiang; Wang, Zhengduo

    2012-02-01

    Atomic layer deposition (ALD) technique is used in the preparation of organic/inorganic layers, which requires uniform surfaces with their thickness down to several nanometers. For film with such thickness, the growth mode defined as the arrangement of clusters on the surface during the growth is of significance. In this work, Al2O3 thin film was deposited on various interfacial species of pre-treated polyethylene terephthalate (PET, 12 μm) by plasma assisted atomic layer deposition (PA-ALD), where trimethyl aluminium was used as the Al precursor and O2 as the oxygen source. The interfacial species, -NH3, -OH, and -COOH as well as SiCHO (derived from monomer of HMDSO plasma), were grafted previously by plasma and chemical treatments. The growth mode of PA-ALD Al2O3 was then investigated in detail by combining results from in-situ diagnosis of spectroscopic ellipsometry (SE) and ex-situ characterization of as-deposited layers from the morphologies scanned by atomic force microscopy (AFM). In addition, the oxygen transmission rates (OTR) of the original and treated plastic films were measured. The possible reasons for the dependence of the OTR values on the surface species were explored.

  20. Inelastic electron tunneling spectroscopy study of ultrathin Al2O3-TiO2 dielectric stack on Si

    NASA Astrophysics Data System (ADS)

    Liu, Zuoguang; Cui, Sharon; Kornblum, Lior; Eizenberg, Moshe; Chang, Ming-Feng; Ma, T. P.

    2010-11-01

    We report the properties of an ultrathin Al2O3-TiO2 dielectric stack with the equivalent-oxide thickness =1.0 nm. The stack exhibits nondiscernable interfacial layer on Si, and absence of serious Al2O3-TiO2 intermixing. Inelastic electron tunneling spectroscopy (IETS) has been used to provide a wealth of information concerning the phonons, bonding vibration modes, and traps in the Al2O3-TiO2 gate dielectric stack as well as its interfaces in a metal-oxide-Si structure. The IETS spectra before and after forming gas annealing suggest that the reduction of traps is related to the formation of Si-H bonds at the oxide-Si interface.

  1. Trapped charge densities in Al2O3-based silicon surface passivation layers

    NASA Astrophysics Data System (ADS)

    Jordan, Paul M.; Simon, Daniel K.; Mikolajick, Thomas; Dirnstorfer, Ingo

    2016-06-01

    In Al2O3-based passivation layers, the formation of fixed charges and trap sites can be strongly influenced by small modifications in the stack layout. Fixed and trapped charge densities are characterized with capacitance voltage profiling and trap spectroscopy by charge injection and sensing, respectively. Al2O3 layers are grown by atomic layer deposition with very thin (˜1 nm) SiO2 or HfO2 interlayers or interface layers. In SiO2/Al2O3 and HfO2/Al2O3 stacks, both fixed charges and trap sites are reduced by at least a factor of 5 compared with the value measured in pure Al2O3. In Al2O3/SiO2/Al2O3 or Al2O3/HfO2/Al2O3 stacks, very high total charge densities of up to 9 × 1012 cm-2 are achieved. These charge densities are described as functions of electrical stress voltage, time, and the Al2O3 layer thickness between silicon and the HfO2 or the SiO2 interlayer. Despite the strong variation of trap sites, all stacks reach very good effective carrier lifetimes of up to 8 and 20 ms on p- and n-type silicon substrates, respectively. Controlling the trap sites in Al2O3 layers opens the possibility to engineer the field-effect passivation in the solar cells.

  2. Crystalline gamma-Al2O3 physical vapour deposition-coating for steel thixoforging tools.

    PubMed

    Bobzin, K; Hirt, G; Bagcivan, N; Khizhnyakova, L; Ewering, M

    2011-10-01

    The process of thixoforming, which has been part of many researches during the last decades, combines the advantages of forging and casting for the shaping of metallic components. But due to the high temperatures of semi-solid steel alloys high demands on the tools are requested. To resists the thermal and mechanical loads (wear, friction, thermal and thermomechanical fatigue) protecting thin films are necessary. In this regard crystalline gamma-Al2O3 deposited via Physical Vapour Deposition (PVD) is a promising candidate: It exhibits high thermal stability, high oxidation resistance and high hot hardness. In the present work the application of a (Ti, Al)N/gamma-Al2O3 coating deposited by means of Magnetron Sputter Ion Plating in an industrial coating unit is presented. The coating was analysed by means of Rockwell test, nanoindentation, and Scanning Electron Microscopy (SEM). The coated tool was tested in thixoforging experiments with steel grade X210CrW12 (AlSI D6). The surface of the coated dies was examined with Scanning Electron Microscope (SEM) after 22, 42, 90 and 170 forging cycles.

  3. Stability of Al2O3 and Al2O3/a-SiNx:H stacks for surface passivation of crystalline silicon

    NASA Astrophysics Data System (ADS)

    Dingemans, G.; Engelhart, P.; Seguin, R.; Einsele, F.; Hoex, B.; van de Sanden, M. C. M.; Kessels, W. M. M.

    2009-12-01

    The thermal and ultraviolet (UV) stability of crystalline silicon (c-Si) surface passivation provided by atomic layer deposited Al2O3 was compared with results for thermal SiO2. For Al2O3 and Al2O3/a-SiNx:H stacks on 2 Ω cm n-type c-Si, ultralow surface recombination velocities of Seff<3 cm/s were obtained and the passivation proved sufficiently stable (Seff<14 cm/s) against a high temperature "firing" process (>800 °C) used for screen printed c-Si solar cells. Effusion measurements revealed the loss of hydrogen and oxygen during firing through the detection of H2 and H2O. Al2O3 also demonstrated UV stability with the surface passivation improving during UV irradiation.

  4. CoFe2/Al2O3/PMNPT multiferroic heterostructures by atomic layer deposition

    NASA Astrophysics Data System (ADS)

    Zhou, Ziyao; Grocke, Garrett; Yanguas-Gil, Angel; Wang, Xinjun; Gao, Yuan; Sun, Nianxiang; Howe, Brandon; Chen, Xing

    2016-05-01

    Multiferroic materials and applications allow electric bias control of magnetism or magnetic bias control of polarization, enabling fast, compact, energy-efficient devices in RF/microwave communication systems such as filters, shifters, and antennas; electronics devices such as inductors and capacitors; and other magnetic material related applications including sensors and memories. In this manuscript, we utilize atomic layer deposition technology to grow magnetic CoFe metallic thin films onto PMNPT, with a ˜110 Oe electric field induced ferromagnetic resonance field shift in the CoFe/Al2O3/PMNPT multiferroic heterostructure. Our work demonstrates an atomic layer deposition fabricated multiferroic heterostructure with significant tunability and shows that the unique thin film growth mechanism will benefit integrated multiferroic application in near future.

  5. The evolution and growth of Al2O3 scales on beta-NiAl. Ph.D. Thesis. Final Report

    NASA Technical Reports Server (NTRS)

    Doychak, J. K.

    1986-01-01

    The formation and growth of Al2O3 scales on (beta)-NiAl were studied using electron microscopy and other analytical techniques to gain an understanding of the oxidation properties of (beta)-NiAl and of alumina-forming alloys, in general. The transient and mature stages of oxidation were studied as well as the transformation stage during which the oxide scale transforms from metastable Al2O3 phases to the thermodynamically stable alpha-Al2O3 phase. The transient oxidation stages were studied at 800 deg C and for short times at 1100C. At 800C, the scales consist predominantly of delta-Al2O3 which forms by cation vacancy ordering in the defective spinel lattice of gamma-Al2O3. At 1100C, a fast-growth morphology of theta-Al2O3 forms as a surface layer over delta-Al2O3. For both oxidation temperatures, the scales are often epitaxially oriented with respect to the metal. The transient scales grow by outward cation diffusion as evidenced by surface growth morphologies. The transformation to alpha-Al2O3 occurs within 1 hour at 1100C by a nucleation and radial growth process. The large volume decrease associated with the transformation results in a highly strained alpha-Al2O3 microstructure. A change in scale growth mechanism from outward cation to inward anion diffusion allows transient surface morphologies to be smoothed by surface diffusion. The mature stage of oxidation involves the growth of an alpha-Al2O3 scale having the lacey morphology formed as a result of the gamma yields alpha transformation. Growth of the scale occurs by counterdiffusion along grain boundaries resulting in ridges formed by impingement of alpha-Al2O3 nuclei during the transformation stage. Also scale growth occurs by inward oxygen diffusion through healed cracks; the cracks result from transformation stresses. The measured growth rates of scales having the lacey morphology are an order of magnitude less than fine-grained alpha-Al2O3 scales. Metal orientations were found to have a large effect on

  6. Influence of Al2O3 on the ionic conductivity of plasticized PVC-PEG blend polymer electrolytes

    NASA Astrophysics Data System (ADS)

    Ravindran, D.; Vickraman, P.

    2016-05-01

    Polymer electrolytes with PVC-PEG blend as host matrix and LiClO4 as dopant salt was prepared through conventional solution casting method. To enhance the conductivity propylene carbonate (PC) was used as plasticizer. The influence of ceramic filler Al2O3 on the conductivity of the electrolyte films were studied by varying the (PVC: Al2O3) ratio. The films were subjected to XRD, complex impedance analysis and SEM analysis. The XRD studies reveal a marginal increase in the amorphous phase of the electrolyte films due to the incorporation of filler. The AC impedance analysis shows the dependency of ionic conductivity on the content (wt %) of filler and exhibit a maximum at 4 wt% filler. The SEM analysis depicts the occurrence of phase separation in electrolyte which is attributed to the poor solubility of polymer PVC in the liquid electrolyte.

  7. Stacked Graphene-Al2O3 Nanopore Sensors for Sensitive Detection of DNA and DNA-Protein Complexes

    PubMed Central

    Venkatesan, Bala Murali; Estrada, David; Banerjee, Shouvik; Jin, Xiaozhong; Dorgan, Vincent E.; Bae, Myung-Ho; Aluru, Narayana R.; Pop, Eric; Bashir, Rashid

    2012-01-01

    We report the development of a multilayered graphene-Al2O3 nanopore platform for the sensitive detection of DNA and DNA-protein complexes. Graphene-Al2O3 nanolaminate membranes are formed by sequentially depositing layers of graphene and Al2O3 with nanopores being formed in these membranes using an electron-beam sculpting process. The resulting nanopores are highly robust, exhibit low electrical noise (significantly lower than nanopores in pure graphene), are highly sensitive to electrolyte pH at low KCl concentrations (attributed to the high buffer capacity of Al2O3) and permit the electrical biasing of the embedded graphene electrode, thereby allowing for three terminal nanopore measurements. In proof-of-principle biomolecule sensing experiments, the folded and unfolded transport of single DNA molecules and RecA coated DNA complexes could be discerned with high temporal resolution. The process described here also enables nanopore integration with new graphene based structures, including nanoribbons and nanogaps, for single molecule DNA sequencing and medical diagnostic applications. PMID:22165962

  8. Al2O3 fiber strength degradation in metal and intermetallic matrix composites

    NASA Technical Reports Server (NTRS)

    Draper, S. L.; Locci, I. E.

    1994-01-01

    The mechanisms for fiber damage in single crystal Al2O3 fiber-reinforced composites were investigated. Both fiber fragmentation and fiber strength degradation were observed in composites with a variety of matrix compositions. Four mechanisms that may be contributing to the fiber strength loss have been proposed and include matrix reaction, reaction with binders, residual stress-induced damage, and pressure from hot pressing. The effect of matrix reaction was separated from the other three effects by sputter-coating the matrices on cleaned fibers and annealing with a temperature profile that simulates processing conditions. These experiments revealed that Y and Cr in FeCrAlY base alloys and Zr in NiAl alloys reacted with the fiber, and grooves and adherent particles were formed on the fiber surface which were responsible for the strength loss. The effects of the matrix reaction appeared to dominate over the other possible mechanisms, although evidence for reaction with binders was also found. Ridges on the fiber surface, which reflected the grain boundaries of the matrix, were also observed. In order for single-crystal Al2O3 to be used as a fiber in MMC's and IMC's, a matrix or protective coating which minimizes matrix reaction during processing will be necessary. Of the matrices investigated, the Thermo-span(sup TM) alloy was the least damaging to fiber properties.

  9. Surface Formation of Single Silicon Wafer Polished with Nano-sized Al2O3 Powders

    NASA Astrophysics Data System (ADS)

    Sun, Yu-li; Zuo, Dun-wen; Zhu, Yong-wei; Wang, Min

    2007-12-01

    Ice polishing single silicon wafers with nano-sized Al2O3 abrasives can be known as ice fixed abrasives chemical mechanical polishing (IFA-CMP). TAn abrasive slurry was made of nano-sized Al2O3 particles dispersed in de-ionized water with a surfactant and the slurry was frozen to form an ice polishing pad. Then polishing tests of blanket silicon wafers with the above ice polishing pad were carried out. The morphologies and surface roughness of the polished silicon wafers were observed and examined on an atomic force microscope. The subsurface damage was assessed by means of cross-section transmission electron microscopy. The surface chemical constituents of the polished silicon wafers were characterized using X-ray photoelectron spectroscopy in order to gain insight into the chemical mechanisms in the process. Scratch resistance of the single silicon wafer was measured by nanoscratching using a nanoindenter to explore the mechanical removal mechanism. The results show that a super smooth surface with an average roughness of 0.367 nm is obtained within 1000 nm × 1000 nm and there is a perfect silicon diamond structure without any microcracks in the subsurface. The removal of material is dominated by the coactions of ductile regime machining and chemical corrosion. In the end, a model of material removal of IFA-CMP is built.

  10. Al 2O 3 supported Ru catalysts prepared by thermolysis of Ru 3(CO) 12 for catalytic wet air oxidation

    NASA Astrophysics Data System (ADS)

    Yu, Chaoying; Zhao, Peiqing; Chen, Gexin; Hu, Bin

    2011-06-01

    Low loading catalysts Ru/γ-Al 2O 3 and Ru-Ce/γ-Al 2O 3 were prepared by thermolysis of Ru 3(CO) 12 on γ-Al 2O 3. The catalysts were characterized by XPS, XRD and SEM. Two new Ru species (Ru A and Ru B) were detected during the Ru 3(CO) 12 decomposition process due to chemical interaction with the active OH groups on the surface of Al 2O 3 support, and the reduction of them can lead to more dispersed metallic phases. The sample was completely decomposed at 673 K in H 2, and RuO 2 was formed with minor amounts of Ru 0. When the temperature was increased to 773 K to heat the sample, the ratio of Ru 0 to RuO 2 increased. However, after the addition of CeO 2, only RuO 2 was detected on surface. The catalysts exhibited high activities in Catalytic Wet Air Oxidation (CWAO) of different organic compounds at high concentration such as isopropyl alcohol, phenol, acetic acids and N,N-dimethylformamide, which is attributed to the better dispersion of Ru particles and the addition of CeO 2 further enhanced number of effectively active sites on the cluster-derived catalyst surface.

  11. Investigation of neutron converters for production of optically stimulated luminescence (OSL) neutron dosimeters using Al 2O 3:C

    NASA Astrophysics Data System (ADS)

    Mittani, J. C. R.; da Silva, A. A. R.; Vanhavere, F.; Akselrod, M. S.; Yukihara, E. G.

    2007-07-01

    This paper presents the optically stimulated luminescence (OSL) properties of neutron dosimeters in powder and in the form of pellets prepared with a mixture of Al 2O 3:C and neutron converters. The neutron converters investigated were high density polyethylene (HDPE), lithium fluoride (LiF), lithium fluoride 95% enriched with 6Li ( 6LiF), lithium carbonate 95% enriched with 6Li ( 6Li 2CO 3), boric acid enriched with 99% of 10B (H310BO) and gadolinium oxide (Gd 2O 3). The proportion of Al 2O 3:C and neutron converter in the mixture was varied to optimize the total OSL signal and neutron sensitivity. The neutron sensitivity and dose-response were determined for the OSL dosimeters using a bare 252Cf source and compared to the response of Harshaw TLD-600 and TLD-700 dosimeters ( 6LiF:Mg,Ti and 7LiF:Mg,Ti). The results demonstrate the possibility of developing an OSL dosimeter made of Al 2O 3:C powder and neutron converter with a neutron sensitivity (defined as the ratio between the 60Co equivalent gamma dose and the reference neutron absorbed dose) and neutron-gamma discrimination comparable to the TLD-600/TLD-700 combination. It was shown that the shape of the OSL decay curves varied with the type of the neutron converter, demonstrating the influence of the energy deposition mechanism and ionization density on the OSL process in Al 2O 3:C.

  12. Enhanced lithium battery with polyethylene oxide-based electrolyte containing silane-Al2 O3 ceramic filler.

    PubMed

    Zewde, Berhanu W; Admassie, Shimelis; Zimmermann, Jutta; Isfort, Christian Schulze; Scrosati, Bruno; Hassoun, Jusef

    2013-08-01

    A solid polymer electrolyte prepared by using a solvent-free, scalable technique is reported. The membrane is formed by low-energy ball milling followed by hot-pressing of dry powdered polyethylene oxide polymer, LiCF3 SO3 salt, and silane-treated Al2 O3 (Al2 O3 -ST) ceramic filler. The effects of the ceramic fillers on the properties of the ionically conducting solid electrolyte membrane are characterized by using electrochemical impedance spectroscopy, XRD, differential scanning calorimeter, SEM, and galvanostatic cycling in lithium cells with a LiFePO4 cathode. We demonstrate that the membrane containing Al2 O3 -ST ceramic filler performs well in terms of ionic conductivity, thermal properties, and lithium transference number. Furthermore, we show that the lithium cells, which use the new electrolyte together with the LiFePO4 electrode, operate within 65 and 90 °C with high efficiency and long cycle life. Hence, the Al2 O3 -ST ceramic can be efficiently used as a ceramic filler to enhance the performance of solid polymer electrolytes in lithium batteries.

  13. Atomic-Scale Structure of Al2O3-ZrO2 Mixed Oxides Prepared by Laser Ablation

    SciTech Connect

    Yang Xiuchun; Dubiel, M.; Hofmeister, H.; Riehemann, W.

    2007-02-02

    By means of x-ray diffractometry (XRD) and X-ray absorption fine structure spectroscopy, the phase composition and atomic structure of laser evaporated ZrO2 and ZrO2-Al2O3 nanopowders have been studied. The results indicate that pure ZrO2 exists in the form of tetragonal structure, Al2O3 doped ZrO2 nanoparticles, however, have cubic structure. Compared to bulk tetragonal ZrO2, pure tetragonal ZrO2 nanoparticles have a shorter Zr-O- and Zr-Zr shell, indicating that the lattice contracts with decreasing particle size. For Al2O3 doped ZrO2 solid solution, the distances of first Zr-O and Zr-Zr (Al) coordination decrease with increasing solid solubility. The disorder degree of the ZrO2 lattice increases with increasing solid solubility. The coevaporated ZrO2-Al2O3 is quickly solidified into amorphous phase when it is ablated in a higher pressure. The amorphous phase contains Zr-O-Zr (Al) clusters and has shorter Zr-O distance and tower Zr-O coordination number.

  14. Highly Flexible and Transparent Ag Nanowire Electrode Encapsulated with Ultra-Thin Al2O3: Thermal, Ambient, and Mechanical Stabilities

    PubMed Central

    Hwang, Byungil; An, Youngseo; Lee, Hyangsook; Lee, Eunha; Becker, Stefan; Kim, Yong-Hoon; Kim, Hyoungsub

    2017-01-01

    There is an increasing demand in the flexible electronics industry for highly robust flexible/transparent conductors that can withstand high temperatures and corrosive environments. In this work, outstanding thermal and ambient stability is demonstrated for a highly transparent Ag nanowire electrode with a low electrical resistivity, by encapsulating it with an ultra-thin Al2O3 film (around 5.3 nm) via low-temperature (100 °C) atomic layer deposition. The Al2O3-encapsulated Ag nanowire (Al2O3/Ag) electrodes are stable even after annealing at 380 °C for 100 min and maintain their electrical and optical properties. The Al2O3 encapsulation layer also effectively blocks the permeation of H2O molecules and thereby enhances the ambient stability to greater than 1,080 h in an atmosphere with a relative humidity of 85% at 85 °C. Results from the cyclic bending test of up to 500,000 cycles (under an effective strain of 2.5%) confirm that the Al2O3/Ag nanowire electrode has a superior mechanical reliability to that of the conventional indium tin oxide film electrode. Moreover, the Al2O3 encapsulation significantly improves the mechanical durability of the Ag nanowire electrode, as confirmed by performing wiping tests using isopropyl alcohol. PMID:28128218

  15. Highly Flexible and Transparent Ag Nanowire Electrode Encapsulated with Ultra-Thin Al2O3: Thermal, Ambient, and Mechanical Stabilities

    NASA Astrophysics Data System (ADS)

    Hwang, Byungil; An, Youngseo; Lee, Hyangsook; Lee, Eunha; Becker, Stefan; Kim, Yong-Hoon; Kim, Hyoungsub

    2017-01-01

    There is an increasing demand in the flexible electronics industry for highly robust flexible/transparent conductors that can withstand high temperatures and corrosive environments. In this work, outstanding thermal and ambient stability is demonstrated for a highly transparent Ag nanowire electrode with a low electrical resistivity, by encapsulating it with an ultra-thin Al2O3 film (around 5.3 nm) via low-temperature (100 °C) atomic layer deposition. The Al2O3-encapsulated Ag nanowire (Al2O3/Ag) electrodes are stable even after annealing at 380 °C for 100 min and maintain their electrical and optical properties. The Al2O3 encapsulation layer also effectively blocks the permeation of H2O molecules and thereby enhances the ambient stability to greater than 1,080 h in an atmosphere with a relative humidity of 85% at 85 °C. Results from the cyclic bending test of up to 500,000 cycles (under an effective strain of 2.5%) confirm that the Al2O3/Ag nanowire electrode has a superior mechanical reliability to that of the conventional indium tin oxide film electrode. Moreover, the Al2O3 encapsulation significantly improves the mechanical durability of the Ag nanowire electrode, as confirmed by performing wiping tests using isopropyl alcohol.

  16. Electrochemical promotion of propane oxidation on Pt deposited on a dense β"-Al2O3 ceramic Ag+ conductor

    NASA Astrophysics Data System (ADS)

    Tsampas, Michail; Kambolis, Anastasios; Obeid, Emil; Lizarraga, Leonardo; Sapountzi, Foteini; Vernoux, Philippe

    2013-08-01

    A new kind of electrochemical catalyst based on a Pt porous catalyst film deposited on a β"-Al2O3 ceramic Ag+ conductor was developed and evaluated during propane oxidation. It was observed that upon anodic polarization, the rate of propane combustion was significantly electropromoted up to 400%. Moreover, for the first time, exponential increase of the catalytic rate was evidenced during galvanostatic transient experiment in excellent agreement with EPOC equation.

  17. In situ studies of butyronitrile adsorption and hydrogenation on Pt/Al2O3 using attenuated total reflection infrared spectroscopy.

    PubMed

    Ortiz-Hernandez, Ivelisse; Williams, Christopher T

    2007-03-13

    The adsorption and hydrogenation of butyronitrile (BN) in hexane on a 5% Pt/Al2O3 catalyst has been studied using in situ attenuated total reflection infrared (ATR-IR) spectroscopy. ATR-IR measurements were conducted on thin ( approximately 10 mum) films of catalyst deposited on Ge wave guides. Multivariate analysis involving classical lease-squares (CLS) and partial least-squares (PLS) modeling was used to aid in the interpretation of the spectroscopic data. During the adsorption of BN over a concentration range from 4 to 40 mM in hexane, no clear evidence for adsorbed N-bound end-on species could be detected. However, a feature at approximately 1635-1640 cm-1 indicated the presence of an adsorbed imine species, with the C=N group existing in a tilted configuration involving a strong degree of pi interaction with the surface. This assignment is bolstered by the detection of N-H stretching bands that are consistent with imine vibrations. This imine-type intermediate is very prominent and shows transient behavior in the presence of solution-phase hydrogen, suggesting that, once formed, it can be converted into amine products that adsorb on the catalyst surface. Evidence for amine formation was observed in the form of N-H stretching and NH2 bending vibrations, with assignments confirmed through comparison studies of butylamine adsorption under identical conditions. Comparisons between Pt/Al2O3 and Al2O3 suggest that there may be some adsorption of these amines on the support surface. The mechanistic implications with regard to heterogeneous nitrile hydrogenation on transition metals under mild conditions are briefly discussed in light of these findings.

  18. ALD of Al2O3 for Highly Improved Performance in Li-Ion Batteries

    SciTech Connect

    Dillon, A.; Jung, Y. S.; Ban, C.; Riley, L.; Cavanagh, A.; Yan, Y.; George, S.; Lee, S. H.

    2012-01-01

    Significant advances in energy density, rate capability and safety will be required for the implementation of Li-ion batteries in next generation electric vehicles. We have demonstrated atomic layer deposition (ALD) as a promising method to enable superior cycling performance for a vast variety of battery electrodes. The electrodes range from already demonstrated commercial technologies (cycled under extreme conditions) to new materials that could eventually lead to batteries with higher energy densities. For example, an Al2O3 ALD coating with a thickness of ~ 8 A was able to stabilize the cycling of unexplored MoO3 nanoparticle anodes with a high volume expansion. The ALD coating enabled stable cycling at C/2 with a capacity of ~ 900 mAh/g. Furthermore, rate capability studies showed the ALD-coated electrode maintained a capacity of 600 mAh/g at 5C. For uncoated electrodes it was only possible to observe stable cycling at C/10. Also, we recently reported that a thin ALD Al2O3 coating with a thickness of ~5 A can enable natural graphite (NG) electrodes to exhibit remarkably durable cycling at 50 degrees C. The ALD-coated NG electrodes displayed a 98% capacity retention after 200 charge-discharge cycles. In contrast, bare NG showed a rapid decay. Additionally, Al2O3 ALD films with a thickness of 2 to 4 A have been shown to allow LiCoO2 to exhibit 89% capacity retention after 120 charge-discharge cycles performed up to 4.5 V vs Li/Li+. Bare LiCoO2 rapidly deteriorated in the first few cycles. The capacity fade is likely caused by oxidative decomposition of the electrolyte at higher potentials or perhaps cobalt dissolution. Interestingly, we have recently fabricated full cells of NG and LiCoO2 where we coated both electrodes, one or the other electrode as well as neither electrode. In creating these full cells, we observed some surprising results that lead us to obtain a greater understanding of the ALD coatings. We have also recently coated a binder free LiNi0.04Mn0

  19. Sonochemical asymmetric hydrogenation of isophorone on proline modified Pd/Al2O3 catalysts.

    PubMed

    Mhadgut, Shilpa C; Bucsi, Imre; Török, Marianna; Török, Béla

    2004-04-21

    The sonochemical asymmetric hydrogenation of isophorone (3,3,5-trimethyl-2-cyclohexenone) by proline-modified Pd/Al2O3 catalysts is described; presonication of a commercial Pd/Al2O3-proline catalytic system resulted in highly enhanced enantioselectivities (up to 85% ee).

  20. Influence of Al2O3 sol concentration on the microstructure and mechanical properties of Cu-Al2O3 composite coatings

    NASA Astrophysics Data System (ADS)

    Wei, Xiaojin; Yang, Zhendi; Tang, Ying; Gao, Wei

    2015-03-01

    Copper (Cu) is widely used as electrical conducting and contacting material. However, Cu is soft and does not have good mechanical properties. In order to improve the hardness and wear resistance of Cu, sol-enhanced Cu-Al2O3 nanocomposite coatings were electroplated by adding a transparent Al oxide (Al2O3) sol into the traditional electroplating Cu solution. It was found that the microstructure and mechanical properties of the nanocomposite coatings were largely influenced by the Al2O3 sol concentration. The results show that the Al2O3 nanoparticle reinforced the composite coatings, resulting in significantly improved hardness and wear resistance in comparison with the pure Cu coatings. The coating prepared at the sol concentration of 3.93 mol/L had the best microhardness and wear resistance. The microhardness has been improved by 20% from 145.5 HV (Vickers hardness number) of pure Cu coating to 173.3 HV of Cu-Al2O3 composite coatings. The wear resistance was also improved by 84%, with the wear volume loss dropped from 3.2 × 10-3 mm3 of Cu coating to 0.52 × 10-3 mm3 of composite coatings. Adding excessive sol to the electrolyte deteriorated the properties.

  1. Effect of Al2O3 Concentration on Density and Structure of (CaO-SiO2)-xAl2O3 Slag

    NASA Astrophysics Data System (ADS)

    Rajavaram, Ramaraghavulu; Kim, Hyelim; Lee, Chi-Hoon; Cho, Won-Seung; Lee, Chi-Hwan; Lee, Joonho

    2017-03-01

    The effect of Al2O3 concentration on the density and structure of CaO-SiO2-Al2O3 slag was investigated at multiple Al2O3 mole percentages and at a fixed CaO/SiO2 ratio of 1. The experiments were conducted in the temperature range of 2154 K to 2423 K (1881 °C to 2150 °C) using the aerodynamic levitation technique. In order to understand the relationship between density and structure, structural analysis of the silicate melts was carried out using Raman spectroscopy. The density of each slag sample investigated in this study decreased linearly with increasing temperature. When the Al2O3 content was less than 15 mole pct, density decreased with increasing Al2O3 content due to the coupling of Si (Al), whereas above 20 mole pct density of the slag increased due to the role of Al3+ ion as a network modifier.

  2. Effective passivation of defects in Ge-rich SiGe-on-insulator substrates by Al 2O 3 deposition and subsequent post-annealing

    NASA Astrophysics Data System (ADS)

    Yang, Haigui; Iyota, Masatoshi; Ikeura, Shogo; Wang, Dong; Nakashima, Hiroshi

    2011-06-01

    A method of Al 2O 3 deposition and subsequent post-deposition annealing (Al 2O 3-PDA) was proposed to passivate electrically active defects in Ge-rich SiGe-on-insulator (SGOI) substrates, which were fabricated using Ge condensation by dry oxidation. The effect of Al 2O 3-PDA on defect passivation was clarified by surface analysis and electrical evaluation. It was found that Al 2O 3-PDA could not only suppress the surface reaction during Al-PDA in our previous work [Yang H, Wang D, Nakashima H, Hirayama K, Kojima S, Ikeura S. Defect control by Al-deposition and the subsequent post-annealing for SiGe-on-insulator substrates with different Ge fractions. Thin Solid Films 2010; 518: 2342-5.], but could also effectively passivate p-type defects generated during Ge condensation. The concentration in the range of 10 16-10 18 cm -3 for defect-induced acceptors and holes in Ge-rich SGOI drastically decreased after Al 2O 3-PDA. As a result of defect passivation, the electrical characteristics of both back-gate p-channel and n-channel metal-oxide-semiconductor field-effect transistors fabricated on Ge-rich SGOI were greatly improved after Al 2O 3-PDA.

  3. 12CaO-7Al2O3 Electride Hollow Cathode

    NASA Technical Reports Server (NTRS)

    Rand, Lauren P. (Inventor); Williams, John D. (Inventor); Martinez, Rafael A. (Inventor)

    2017-01-01

    The use of the electride form of 12CaO-7Al2O3, or C12A7, as a low work function electron emitter in a hollow cathode discharge apparatus is described. No heater is required to initiate operation of the present cathode, as is necessary for traditional hollow cathode devices. Because C12A7 has a fully oxidized lattice structure, exposure to oxygen does not degrade the electride. The electride was surrounded by a graphite liner since it was found that the C12A7 electride converts to it's eutectic (CA+C3A) form when heated (through natural hollow cathode operation) in a metal tube.

  4. Uniaxial magnetic anisotropy in Pd/Fe bilayers on Al2O3 (0001) induced by oblique deposition

    NASA Astrophysics Data System (ADS)

    Chi, Chiao-Sung; Wang, Bo-Yao; Pong, Way-Faung; Ho, Tsung-Ying; Tsai, Cheng-Jui; Lo, Fang-Yuh; Chern, Ming-Yau; Lin, Wen-Chin

    2012-06-01

    This study reports the preparation of self-organized 1-dimensional magnetic structures of Fe on Al2O3 (0001) by oblique deposition. The x-ray diffraction (XRD) results in this study show the preferred (110) texture of the Fe films. XRD and extended x-ray adsorption fine structure measurements indicate larger oblique deposition angle (65°) leads to more disorder in the Fe crystalline structure. After capping with a Pd overlayer, the Pd/Fe/Al2O3 (0001) still exhibits uniaxial magnetic anisotropy induced by the underlying 1-dimensional Fe nanostructure. This uniaxial magnetic anisotropy changes with the variation in Fe thickness and oblique deposition angle. These results clearly indicate the feasibility of manipulating uniaxial magnetic anisotropy and crystalline order through the oblique deposition of magnetic materials.

  5. Microstructure and Optical Properties of SS/Mo/Al2O3 Spectrally Selective Solar Absorber Coating

    NASA Astrophysics Data System (ADS)

    Gao, Xiang-Hu; Guo, Zhi-Ming; Geng, Qing-Fen; Ma, Peng-Jun; Liu, Gang

    2017-01-01

    Surface-textured Mo thin film is fabricated by magnetron sputtering through the adjustment of deposition parameters, which exhibits a high absorptance of 0.80 and a low emittance of 0.09. The single-layer Mo deposited on stainless steel (SS) is characterized by x-ray diffraction (XRD), ultra-high resolution scanning electron microscope, atomic force microscope and optical measurement. The controlled surface roughness combined with larger aspect ratio contributes much to the high absorptance and low emittance. Based on the SS/Mo coating, a spectrally selective coating (SS/Mo/Al2O3) is designed and fabricated. The coating shows an amorphous structure and exhibits an absorptance of 0.90 and an emittance of 0.08. Tauc-Lorentz and Drude free-electron models are used to modeling the optical properties of Al2O3 and Mo layers by phase-modulated spectroscopic ellipsometry.

  6. Microstructure and Optical Properties of SS/Mo/Al2O3 Spectrally Selective Solar Absorber Coating

    NASA Astrophysics Data System (ADS)

    Gao, Xiang-Hu; Guo, Zhi-Ming; Geng, Qing-Fen; Ma, Peng-Jun; Liu, Gang

    2016-11-01

    Surface-textured Mo thin film is fabricated by magnetron sputtering through the adjustment of deposition parameters, which exhibits a high absorptance of 0.80 and a low emittance of 0.09. The single-layer Mo deposited on stainless steel (SS) is characterized by x-ray diffraction (XRD), ultra-high resolution scanning electron microscope, atomic force microscope and optical measurement. The controlled surface roughness combined with larger aspect ratio contributes much to the high absorptance and low emittance. Based on the SS/Mo coating, a spectrally selective coating (SS/Mo/Al2O3) is designed and fabricated. The coating shows an amorphous structure and exhibits an absorptance of 0.90 and an emittance of 0.08. Tauc-Lorentz and Drude free-electron models are used to modeling the optical properties of Al2O3 and Mo layers by phase-modulated spectroscopic ellipsometry.

  7. Carbon-riveted Pt catalyst supported on nanocapsule MWCNTs-Al2O3 with ultrahigh stability for high-temperature proton exchange membrane fuel cells

    NASA Astrophysics Data System (ADS)

    Jiang, Zheng-Zhi; Wang, Zhen-Bo; Qu, Wei-Li; Rivera, Harry; Gu, Da-Ming; Yin, Ge-Ping

    2012-11-01

    Pt catalyst supported on nanocapsule MWCNTs-Al2O3 (multi-walled carbon nanotubes, MWCNTs) catalyst has been prepared by microwave-assisted polyol process (MAPP). The results of electrochemical measurements show that the nanocapsule Pt/MWCNTs-Al2O3 catalyst has higher activity due to more uniform dispersion and smaller size of Pt nanoparticles, and higher stability ascribed to the stronger metal-support interaction (SMSI) between Pt nanoparticles and nanocapsule support than in Pt/MWCNTs. Furthermore, the carbon-riveted nanocapsule Pt/MWCNTs-Al2O3 catalyst has been designed and synthesized on the basis of in situ carbonization of glucose. The physical characteristics such as X-ray diffraction (XRD), energy dispersive analysis of X-ray (EDAX), transmission electron microscopy (TEM) and X-ray photoelectron spectroscopy (XPS) have indicated that α-Al2O3 indeed entered into the inside of the MWCNTs and formed a nanocapsule support of MWCNTs with α-Al2O3 as stuffing. The accelerated potential cycling tests (APCT) show that carbon-riveted nanocapsule Pt/MWCNTs-Al2O3 possesses 10 times the stability of Pt/C and has 4.5 times the life-span of carbon-riveted Pt/TiO2-C reported in our previous work. The significantly enhanced stability for carbon-riveted nanocapsule Pt/MWCNTs-Al2O3 catalyst is attributed to the reasons as follows: the inherently excellent mechanical resistance and stability of α-Al2O3 and MWCNTs in acidic and oxidative environments; SMSI between Pt nanoparticles and the nanocapsule support; the anchoring effect of the carbon layers formed during the carbon-riveting process (CRP); the increase of Pt(0) composition during CRP.

  8. CeO2 nanocrystals and solid-phase heteroepitaxy of CeAlO3 interlayer on Al2O3(0 0 0 1) substrate

    NASA Astrophysics Data System (ADS)

    Hattori, Takashi; Ozawa, Masakuni

    2017-04-01

    Grain growth and interfacial solid state of CeO2 nanocrystals (NCs) layer on Al2O3(0 0 0 1) substrate were examined. CeO2 NCs layer on Al2O3(0 0 0 1) was prepared by dipping method using CeO2 nanocrystals colloid solution. After heat treatment at 1000 °C in air, CeO2 NCs layer was formed on Al2O3(0 0 0 1). The CeO2 NCs sintered to form a surface layer with an interlayer of CeAlO3 after heat treatment at 950 °C in H2/Ar, leading to dense and smooth CeO2 NCs layer on Al2O3(0 0 0 1) substrate. CeAlO3 was grown via diffusion of CeO2-x (non-stoichiometric CeO2) and Al2O3, suggesting solid-phase reaction heteroepitaxy mechanism on Al2O3(0 0 0 1) single crystal substrate.

  9. Study of Blue Photoluminescence in Titanium Doped Al2O3 Single-Crystals

    NASA Astrophysics Data System (ADS)

    Daimon, T.; Naruse, H.; Watanabe, H.; Oda, H.; Yamanaka, A.

    2011-05-01

    Optical properties have been investigated in titanium doped sapphire, prepared under oxidized condition. Charge-transfer transitions to 3d states of tetravalent Ti4+ from 2p ones of O2- are found to be located below the fundamental absorption edge of Al2O3. The photo-excitation for this band leads to the intense blue emission, the spectrum of which is quite different from the luminescence of the d-d transitions in trivalent Ti3+. The UV-irradiation also leads to an absorption peak below the charge-transfer band, resulted from that the photo-excited electrons in part form color centers. The post-annealing at higher temperatures above 300°C completely destroys the color centers. The blue photoluminescence is found to be greatly suppressed by the UV-irradiation and is recovered by the post-annealing. This fact indicates that the color centers prevent the blue emission.

  10. EXAFS Characterization of Dendrimer-Derived Pt/γ-Al2O3

    NASA Astrophysics Data System (ADS)

    Siani, A.; Alexeev, O. S.; Williams, C. T.; Ploehn, H. J.; Amiridis, M. D.

    2007-02-01

    The various steps involved in the preparation of a Pt/γ-Al2O3 material using hydroxyl-terminated generation four (G4OH) PAMAM dendrimers as templates were monitored by EXAFS. The results indicate that Cl ligands in the Pt precursors (H2PtCl6 and K2PtCl4) were partially replaced by aquo ligands upon hydrolysis to form [PtCl3(H2O)3]+ and [PtCl2(H2O)2] species. After interaction of such species with G4OH, Cl ligands from the first coordination shell of Pt were further replaced by nitrogen atoms from the dendrimer interior, indicating the complexation of Pt with the dendrimer. This process was accompanied by a transfer of the electron density from the dendrimer to Pt, indicating that the former plays the role of a ligand. Following treatment of the H2PtCl6/G4OH and K2PtCl4/G4OH composites with NaBH4, no substantial changes were detecteded in the electronic or coordination environment of Pt, and no formation of metal nanoparticles was observed. However, when the reduction treatment was performed with H2, the formation of extremely small Pt clusters incorporating no more than 4 Pt atoms was observed. These Pt species remained strongly bonded to the dendrimer and their nuclearity depends on the length of the H2 treatment. Formation of Pt nanoparticles with an average diameter of approximately 10 Å was finally observed after the deposition of H2PtCl6/G4OH on γ-Al2O3 and drying, suggesting that their formation may be related to the collapse of the dendrimer structure. The Pt nanoparticles formed appear to have high mobility, since subsequent thermal treatment in O2/H2 led to further sintering.

  11. Adsorption properties of CO, H2 and CH4 over Pd/γ-Al2O3 catalyst: A density functional study

    NASA Astrophysics Data System (ADS)

    Song, Zijian; Wang, Ben; Yu, Jie; Ma, Chuan; Qu, Qinggong; Zeng, Zhao; Xiang, Jun; Hu, Song; Sun, Lushi

    2016-11-01

    Density functional theory (DFT) calculations were employed to investigate the adsorption characteristics of carbon monoxide (CO), hydrogen (H2), and methane (CH4) on the surface of clean γ-Al2O3 and Pd supported γ-Al2O3, which is of significant for catalytic combustion. The adsorption intensities of the three gas molecules in pure γ-Al2O3 (1 1 0) and Pd/γ-Al2O3 (1 1 0) were in the order of CO > H2 > CH4. The corresponding adsorption energies on the Pd/γ-Al2O3 (1 1 0) surface were at least three times higher than those on γ-Al2O3 (1 1 0). Anlysis of Mulliken population and partial density of states (PDOS) showed that the adsorption mechanisms were as follow: (a) CO stably adsorbed on the bridge site of dimer Pd with two Csbnd Pd bonds because of charges transfer from the surface to CO, and the triple bond (Ctbnd O) was broken to a double bond (Cdbnd O); (b) H2 was dissociated into hydrogen atoms on the dimer Pd and produced a stable planar configuration; and (c) the tetrahedral structure of CH4 was destroyed on the surface and formed a sbnd CH3 species bonded to the Pd atom, which contributes to the orbital hybridization between C and Pd atoms.

  12. Properties of slow traps of ALD Al2O3/GeOx/Ge nMOSFETs with plasma post oxidation

    NASA Astrophysics Data System (ADS)

    Ke, M.; Yu, X.; Chang, C.; Takenaka, M.; Takagi, S.

    2016-07-01

    The realization of Ge gate stacks with a small amount of slow trap density as well as thin equivalent oxide thickness and low interface state density (Dit) is a crucial issue for Ge CMOS. In this study, we examine the properties of slow traps, particularly the location of slow traps, of Al2O3/GeOx/n-Ge and HfO2/Al2O3/GeOx/n-Ge MOS interfaces with changing the process and structural parameters, formed by atomic layer deposition (ALD) of Al2O3 and HfO2/Al2O3 combined with plasma post oxidation. It is found that the slow traps can locate in the GeOx interfacial layer, not in the ALD Al2O3 layer. Furthermore, we study the time dependence of channel currents in the Ge n-MOSFETs with 5-nm-thick Al2O3/GeOx/Ge gate stacks, with changing the thickness of GeOx, in order to further clarify the position of slow traps. The time dependence of the current drift and the effective time constant of slow traps do not change among the MOSFETs with the different thickness GeOx, demonstrating that the slow traps mainly exist near the interfaces between Ge and GeOx.

  13. Pinhole Effect on the Melting Behavior of Ag@Al2O3 SERS Substrates.

    PubMed

    Ma, Lingwei; Huang, Yu; Hou, Mengjing; Li, Jianghao; Zhang, Zhengjun

    2016-12-01

    High-temperature surface-enhanced Raman scattering (SERS) sensing is significant for practical detections, and pinhole-containing (PC) metal@oxide structures possessing both enhanced thermal stability and superior SERS sensitivity are served as promising SERS sensors at extreme sensing conditions. Through tuning the Al2O3 precursors' exposure time during atomic layer deposition (ALD), Al2O3 shells with different amount of pinholes were covered over Ag nanorods (Ag NRs). By virtue of these unique PC Ag@Al2O3 nanostructures, herein we provide an excellent platform to investigate the relationship between the pinhole rate of Al2O3 shells and the melting behavior, high-temperature SERS performances of these core-shell nanostructures. Pinhole effect on the melting procedures of PC Ag@Al2O3 substrates was characterized in situ via their reflectivity variations during heating, and the specific melting point was quantitatively estimated. It is found that the melting point of PC Ag@Al2O3 raised along with the decrement of pinhole rate, and substrates with less pinholes exhibited better thermal stability but sacrificed SERS efficiency. This work achieved highly reliable and precise control of the pinholes over Al2O3 shells, offering sensitive SERS substrates with intensified thermal stability and superior SERS performances at extreme sensing conditions.

  14. Pinhole Effect on the Melting Behavior of Ag@Al2O3 SERS Substrates

    NASA Astrophysics Data System (ADS)

    Ma, Lingwei; Huang, Yu; Hou, Mengjing; Li, Jianghao; Zhang, Zhengjun

    2016-03-01

    High-temperature surface-enhanced Raman scattering (SERS) sensing is significant for practical detections, and pinhole-containing (PC) metal@oxide structures possessing both enhanced thermal stability and superior SERS sensitivity are served as promising SERS sensors at extreme sensing conditions. Through tuning the Al2O3 precursors' exposure time during atomic layer deposition (ALD), Al2O3 shells with different amount of pinholes were covered over Ag nanorods (Ag NRs). By virtue of these unique PC Ag@Al2O3 nanostructures, herein we provide an excellent platform to investigate the relationship between the pinhole rate of Al2O3 shells and the melting behavior, high-temperature SERS performances of these core-shell nanostructures. Pinhole effect on the melting procedures of PC Ag@Al2O3 substrates was characterized in situ via their reflectivity variations during heating, and the specific melting point was quantitatively estimated. It is found that the melting point of PC Ag@Al2O3 raised along with the decrement of pinhole rate, and substrates with less pinholes exhibited better thermal stability but sacrificed SERS efficiency. This work achieved highly reliable and precise control of the pinholes over Al2O3 shells, offering sensitive SERS substrates with intensified thermal stability and superior SERS performances at extreme sensing conditions.

  15. Synthesis, sintering and characterization of Al2O 3-TiC nano-composites powders from carbon coated precursors

    NASA Astrophysics Data System (ADS)

    Kaga, Hisashi

    Synthesis, sintering and characterization of Al2O3-TiC nano-composite powders from carbon coated precursors were investigated. Degussa P-25 titanium dioxide, Cabot carbon black, and Alfa Aesar aluminum were the initial starting powders. Hydrocarbon gas (C3H6) was used as the carbon source for the carbon coated precursors. Analytical methods employed in this research were BET surface area measurement, X-ray diffraction (XRD), transmission electron microscopy (TEM), scanning electron microscopy (SEM), Vickers hardness tester, and differential scanning calorimetry (DSC). For Al2O3-TiC formation studies, three different types of precursors which are carbon coated TiO2/Al mixture, mixture of carbon coated TiO2 and Al, and standard mixture of TiO 2, Al, and carbon black were prepared to examine formation mechanism reaction. The carbon coated TiO2/Al mixture dramatically changed the reaction mechanism and produced high quality nanosize Al2O 3-TiC powders. XRD and BET results showed that the carbon coated TiO 2/Al synthesized at 1200°C had only Al2O3 and TiC phases with high surface area about 22m2/g which were formed via intermediate phases of Ti2O3 and Al 3Ti. TEM results showed that the produced Al2O3-TiC powders had fine particle size (20--80 nm), narrow particle size distribution, and freely agglomerated. DSC curve and XRD results of the carbon coated TiO 2/Al mixture also showed that there were two endothermic and three successive weak exothermic reactions because released heat was controlled by the carbon coating. Experimentally determined the first exothermic reaction 5Al + 3TiO 2 → Al2O3 + Ti2O3 + Al3Ti which was compared with theoretical explanation model and they were found to be in agreement. Sintering behavior of nano-size Al 2O3-TiC synthesized from carbon coated precursors was investigated in Al2O3-TiC-MgO system using pressureless sintering and hot-pressing methods. After pressureless sintering, MgO doped Al 2O3-20wt.%TiC resulted in 98% of theoretical

  16. Resistance switching of epitaxial VO2/Al2O3 heterostructure at room temperature induced by organic liquids

    NASA Astrophysics Data System (ADS)

    Yang, Mengmeng; Yang, Yuanjun; Hong, Bin; Huang, Haoliang; Hu, Sixia; Dong, Yongqi; Wang, Haibo; He, Hao; Zhao, Jiyin; Liu, Xuguang; Luo, Zhenlin; Li, Xiaoguang; Zhang, Haibin; Gao, Chen

    2015-03-01

    We studied using organic liquids (cyclohexane, n-butanol, and ethylene glycol) to modulate the transport properties at room temperature of an epitaxial VO2 film on a VO2/Al2O3 heterostructure. The resistance of the VO2 film increased when coated with cyclohexane or n-butanol, with maximum changes of 31% and 3.8%, respectively. In contrast, it decreased when coated with ethylene glycol, with a maximum change of -7.7%. In all cases, the resistance recovered to its original value after removing the organic liquid. This organic-liquid-induced reversible resistance switching suggests that VO2 films can be used as organic molecular sensors.

  17. Thermoluminescence studies of γ-irradiated Al2O3:Ce3+ phosphor

    NASA Astrophysics Data System (ADS)

    Reddy, S. Satyanarayana; Nagabhushana, K. R.; Singh, Fouran

    2016-07-01

    Pure and Ce3+ doped Al2O3 phosphors were synthesized by solution combustion method. The synthesized samples were characterized by X-ray diffraction (XRD) and its shows α-phase of Al2O3. Crystallite size was estimated by Williamson-Hall (W-H) method and found to be 49, 59 and 84 nm for pure, 0.1 mol% and 1 mol% Ce3+ doped Al2O3 respectively. Trace elemental analysis of undoped Al2O3 shows impurities viz. Fe, Cr, Mn, Mg, Ti, etc. Photoluminescence (PL) spectra of Al2O3:Ce3+ shows emission at 367 nm and excitation peak at 273 nm, which are corresponding to 5D → 4F and 4F → 5D transitions respectively. PL intensity decreases with concentration up to 0.4 mol%, beyond this mol% PL intensity increases with doping concentration up to 2 mol%. Thermoluminescence (TL) studies of γ-rayed pure and Ce3+ doped Al2O3 have been studied. Two well resolved TL glow peaks at 457.5 K and 622 K were observed in pure Al2O3. Additional glow peak at 566 K was observed in Al2O3:Ce3+. Maximum TL intensity was observed for Al2O3:Ce3+ (0.1 mol%) beyond this TL intensity decreases with increasing Ce3+ concentration. Computerized glow curve deconvolution (CGCD) method was used to resolve the multiple peaks and to calculate TL kinetic parameters. Thermoluminescence emission (TLE) spectra of pure Al2O3 glow peaks (457.5 K and 622 K) shows sharp emission at 694 nm and two small humps at 672 nm and 709 nm. The sharp peak at 696 nm corresponds to Cr3+ impurity of 2Eg → 4A2g transition of R lines and 713 nm hump is undoubtedly belongs to Cr3+ emission of near neighbor pairs. The emission at 672 nm is characteristic of Mn4+ impurity ions of 2E → 4A2 transition. TLE of Al2O3:Ce3+ (0.1 mol%) shows additional broad emission at 412 nm corresponds to F-centers. Linearity is observed in the dose range 20-500 Gy in Al2O3:Ce3+ (1 mol%).

  18. Minimizing of the boundary friction coefficient in automotive engines using Al2O3 and TiO2 nanoparticles

    NASA Astrophysics Data System (ADS)

    Ali, Mohamed Kamal Ahmed; Xianjun, Hou; Elagouz, Ahmed; Essa, F. A.; Abdelkareem, Mohamed A. A.

    2016-12-01

    Minimizing of the boundary friction coefficient is critical for engine efficiency improvement. It is known that the tribological behavior has a major role in controlling the performance of automotive engines in terms of the fuel consumption. The purpose of this research is an experimental study to minimize the boundary friction coefficient via nano-lubricant additives. The tribological characteristics of Al2O3 and TiO2 nano-lubricants were evaluated under reciprocating test conditions to simulate a piston ring/cylinder liner interface in automotive engines. The nanoparticles were suspended in a commercially available lubricant in a concentration of 0.25 wt.% to formulate the nano-lubricants. The Al2O3 and TiO2 nanoparticles had sizes of 8-12 and 10 nm, respectively. The experimental results have shown that the boundary friction coefficient reduced by 35-51% near the top and bottom dead center of the stroke (TDC and BDC) for the Al2O3 and TiO2 nano-lubricants, respectively. The anti-wear mechanism was generated via the formation of protective films on the worn surfaces of the ring and liner. These results will be a promising approach for improving fuel economy in automotive.

  19. Reduced defect density at the CZTSSe/CdS interface by atomic layer deposition of Al2O3

    NASA Astrophysics Data System (ADS)

    Erkan, Mehmet Eray; Chawla, Vardaan; Scarpulla, Michael A.

    2016-05-01

    The greatest challenge for improving the power conversion efficiency of Cu2ZnSn(S,Se)4 (CZTSSe)/CdS/ZnO thin film solar cells is increasing the open circuit voltage (VOC). Probable leading causes of the VOC deficit in state-of-the-art CZTSSe devices have been identified as bulk recombination, band tails, and the intertwined effects of CZTSSe/CdS band offset, interface defects, and interface recombination. In this work, we demonstrate the modification of the CZTSSe absorber/CdS buffer interface following the deposition of 1 nm-thick Al2O3 layers by atomic layer deposition (ALD) near room temperature. Capacitance-voltage profiling and quantum efficiency measurements reveal that ALD-Al2O3 interface modification reduces the density of acceptor-like states at the heterojunction resulting in reduced interface recombination and wider depletion width. Indications of increased VOC resulting from the modification of the heterojunction interface as a result of ALD-Al2O3 treatment are presented. These results, while not conclusive for application to state-of-the-art high efficiency CZTSSe devices, suggest the need for further studies as it is probable that interface recombination contributes to reduced VOC even in such devices.

  20. Proactive control of the metal-ceramic interface behavior of thermal barrier coatings using an artificial alpha-Al2O 3 layer

    NASA Astrophysics Data System (ADS)

    Su, Yi-Feng

    The reliability and life of thermal barrier coatings (TBCs) used in the hottest sections of advanced aircraft engines and power generation systems are largely dictated by: (1) the ability of a metallic bond coating to form an adherent thermally grown oxide (TGO) at the metal-ceramic interface and (2) the rate at which the TGO grows upon oxidation. It is postulated that a thin alpha-Al2O3 layer, if it could be directly deposited on a Ni-based alloy, will guide the alloy surface to form a TGO that is more tenacious and slower growing than what is attainable with state-of-the-art bond coatings. A chemical vapor deposition (CVD) process was used to directly deposit an alpha-Al2O3 layer on the surface of a single crystal Ni-bases superalloy. The layer was 150 nm thick, and consisted of small columnar grains (˜100 to 200 nm) with alpha-Al2O 3 as the major phase with a minute amount of theta-Al2O 3. Within 0.5 h of oxidation at 1150°C, the resulting TGO formed on the alloy surface underwent significant lateral grain growth. Consequently, within this time scale, the columnar nature of the TGO became well established. After 50 h, a network of ridges was clearly observed on the TGO surface instead of equiaxed grains typically observed on uncoated alloy surface. Comparison of the TGO morphologies observed with and without the CVD-Al2O 3 layer suggested that the transient oxidation of the alloy surface was considerably reduced. The alloy coated with the CVD-Al2O 3 layer also produced a much more adherent and slow growing TGO in comparison to that formed on the uncoated alloy surface. The CVD-Al2O 3 layer also improved its spallation resistance. Without the CVD-Al 2O3 layer, more than 50% of the TGO spalled off the alloy surface after 500 h in oxidation with significant wrinkling of the TGO that remained on the alloy surface. In contrast, the TGO remained intact with the CVD-Al2O3 layer after the 500 h exposure. Furthermore, the CVD layer significantly reduced the degree of

  1. Superconductivity in Al/Al2O3 interface

    NASA Astrophysics Data System (ADS)

    Palnichenko, A. V.; Vyaselev, O. M.; Mazilkin, A. A.; Khasanov, S. S.

    2016-06-01

    Metastable superconductivity at Tc ≈ 65 K has been observed in Al foil subjected to special oxidation process, according to the ac magnetic susceptibility and electrical resistance measurements. Comparison of the ac susceptibility and the dc magnetization measurements infers that the superconductivity arises within the interfacial granular layer formed during the oxidation process between metallic aluminum and its oxide.

  2. 12Cao-7Al2o3 Electride Hollow Cathode

    NASA Technical Reports Server (NTRS)

    Rand, Lauren P. (Inventor); Williams, John D. (Inventor); Martinez, Rafael A. (Inventor)

    2016-01-01

    The use of the electride form of 12CaO-7Al.sub.2O.sub.3, or C12A7, as a low work function electron emitter in a hollow cathode discharge apparatus is described. No heater is required to initiate operation of the present cathode, as is necessary for traditional hollow cathode devices. Because C12A7 has a fully oxidized lattice structure, exposure to oxygen does not degrade the electride. The electride was surrounded by a graphite liner since it was found that the C12A7 electride converts to it's eutectic (CA+C3A) form when heated (through natural hollow cathode operation) in a metal tube.

  3. Reversible removal of SO2 at low temperature by Bacillus licheniformis immobilized on γ-Al2O3.

    PubMed

    Jia, Lishan; Deng, Renpan; Song, Hao

    2011-01-01

    Bacillus licheniformis R08 biomass was immobilized on γ-Al2O3 and the effects of R08 biomass loading, SO2 concentration, water vapor, oxygen and temperature on removal of SO2 were investigated. The experimental results indicated that SO2 saturation capacity increased with increasing R08 biomass loading and SO2 concentration, but decreased with increasing adsorption temperature. Water vapor activated the adsorbent and promoted SO2 removal. An increase in oxygen concentration from 5 to 10% had little effect on SO2 removal. FTIR analysis revealed that the R08 biomass bound to γ-Al2O3 mainly by forming R-CO-O-Al bonds. X-ray photoelectron spectroscopy analysis indicated that γ-Al2O3 reacted with SO2 and formed aluminum sulfate in the presence of oxygen when R08 biomass loading was 13.8%, but that amido groups of the R08 biomass reacted with SO2 and formed sulfite when biomass loading was 32.4%. Ten continuous adsorption-desorption cycles showed that the adsorbent had an excellent regeneration performance.

  4. Interface Defect Hydrogen Depassivation and Capacitance-Voltage Hysteresis of Al2O3/InGaAs Gate Stacks.

    PubMed

    Tang, Kechao; Palumbo, Felix Roberto; Zhang, Liangliang; Droopad, Ravi; McIntyre, Paul C

    2017-03-01

    We investigate the effects of pre- and postatomic layer deposition (ALD) defect passivation with hydrogen on the trap density and reliability of Al2O3/InGaAs gate stacks. Reliability is characterized by capacitance-voltage hysteresis measurements on samples prepared using different fabrication procedures and having different initial trap densities. Despite its beneficial capability to passivate both interface and border traps, a final forming gas (H2/N2) anneal (FGA) step is correlated with a significant hysteresis. This appears to be caused by hydrogen depassivation of defects in the gate stack under bias stress, supported by the observed bias stress-induced increase of interface trap density, and strong hydrogen isotope effects on the measured hysteresis. On the other hand, intentional air exposure of the InGaAs surface prior to Al2O3 ALD increases the initial interface trap density (Dit) but considerably lowers the hysteresis.

  5. [Effects of SO2 on NO reduction with methanol over Ag/Al2O3 catalyst].

    PubMed

    Zhu, Tianle; Hao, Jiming; Fu, Lixin; Cui, Xiangyu; Wang, Yanji

    2002-07-01

    Ag/Al2O3 catalyst with 5% Ag loading was prepared by the single step sol-gel mixture method and the effects of adding SO2 to reaction feed on NO reduction by CH3OH over the catalyst was investigated in the presence of oxygen. The results showed that in the absence of SO2 and H2O the catalyst displayed lower activity temperature and higher N2O selectivity, which was attributed to the partial reduction of oxidized Ag into metallic Ag under reaction conditions. Selective catalytic reduction activity was not decreased but significantly increased, N2O formation was suppressed and most effective NO reduction temperature shifted to higher temperature by pre-sulfated Ag/Al2O3 or addition of SO2 to reaction mixture. XPS analysis showed that the sulfate-like species were formed by the effect of SO2.

  6. Hydrogen-deuterium exchange induced by an electric field in α-Al2O3 single crystals

    NASA Astrophysics Data System (ADS)

    Ramírez, R.; Colera, I.; Gonz&Ález, R.; Savoini, B.; Chen, Y.

    Hydrogen and deuterium are observed in α-Al2O3 crystals in the form of OH- and OD- radicals, respectively, which absorb in the infrared region. Infrared-absorption measurements were used to monitor diffusion of deuterons and protons in α-Al2O3 single crystals under the application of a moderate electric field parallel to the crystallographic c-axis, in the temperature range of 973-1333K. A linear dependence of the percent of exchange with both annealing time and applied voltage is observed, indicating that ionic conduction was taking place. The activation energy for the H+ ↔; D+ exchange was determined to be 2.4 eV, less than half the value obtained by pure thermal means, suggesting that under the application of an electric field the deuteron (proton) diffusion mechanism is different.

  7. O-18 tracer studies of Al2O3 scale formation on NiCrAl alloys

    NASA Technical Reports Server (NTRS)

    Reddy, K. P. R.; Cooper, A. R.; Smialek, J. L.

    1982-01-01

    Diffusion processes in Al2O3 scales formed on NiCrAl + Zr alloys were studied by the proton activation technique employing the O-18 isotope as a tracer. The O-18 profiles identified a zone of oxide penetration beneath the external scale. Both this subscale formation and the outer Al2O3 scale thickness were shown by this technique to increase with Zr content in the alloy. Estimated kp's from scale thicknesses were in agreement with gravimetric measurements for various Zr levels. Alternate exposures in O-16 and O-18 revealed that oxygen inward transport was the primary growth mechanism. A qualitative analysis of these O-18 profiles indicated that the oxygen transport was primarily via short-circuit paths, such as grain boundaries.

  8. Al2O3 Scale Development on Iron Aluminides

    SciTech Connect

    Zhang, Xiao-Feng; Thaidigsmann, Katja; Ager, Joel; Hou, Peggy Y.

    2005-11-10

    The structure and phase of the Al{sub 2}O{sub 3} scale that forms on an Fe{sub 3}Al-based alloy (Fe-28Al-5Cr) (at %) was investigated by transmission electron microscopy (TEM) and photoluminescence spectroscopy (PL). Oxidation was performed at 900 C and 1000 C for up to 190 min. TEM revealed that single-layer scales were formed after short oxidation times. Electron diffraction was used to show that the scales are composed of nanoscale crystallites of the {theta}, {gamma}, and {alpha} phases of alumina. Band-like structure was observed extending along three 120{sup o}-separated directions within the surface plane. Textured {theta} and {gamma} grains were the main components of the bands, while mixed {alpha} and transient phases were found between the bands. Extended oxidation produced a double-layered scale structure, with a continuous {alpha} layer at the scale/alloy interface, and a {gamma}/{theta} layer at the gas surface. The mechanism for the formation of Al{sub 2}O{sub 3} scales on iron aluminide alloys is discussed and compared to that for nickel aluminide alloys.

  9. Production of hydrogen by autothermal reforming of propane over Ni/delta-Al2O3.

    PubMed

    Lee, Hae Ri; Lee, Kwi Yeon; Park, Nam Cook; Shin, Jae Soon; Moon, Dong Ju; Lee, Byung Gwon; Kim, Young Chul

    2006-11-01

    The performance of Ni/delta-Al2O3 catalyst in propane autothermal reforming (ATR) for hydrogen production was investigated in the present study. The catalysts were characterized using XRD, TEM, and SEM. The activity of the Ni/delta-Al2O3 catalyst manufactured by the water-alcohol method was better than those of the catalysts manufactured by the impregnation and chemical reduction methods. The Ni/delta-Al2O3 catalysts were modified by the addition of promoters such as Mg, La, Ce, and Co, in order to improve their stability and yield. Hydrogen production was the largest for the Ni-Co-CeO2/Al2O3, catalyst.

  10. Microstructure and Mechanical Properties of Al2O3 / A336 Compsite by Low Pressure Infiltratrion

    DTIC Science & Technology

    2011-08-01

    clear and bonds directly with matrix and fiber. It is confirmed by the presence of the γ-Al2O3, MgO from diffraction peaks in the XRD pattern (Fig 4...and EDS (Fig. 3(b),(c)). It suggests that γ-Al2O3, MgO can be produced as results of the interfacial reaction between the Al liquid and the SiO2...results of the reaction between the α-Al2O3 and the MgO , i.e. α-Al2O3+ MgO →MgAl2O4, It was noticed that MgAl2O4 improve wettability, but decrease

  11. Investigation by Mössbauer spectroscopy of Sn redox transformations during H2/O2 titration on Pt/Al2O3Sn-Cl and Pt/Al2O3SnIn-Cl naphtha reforming catalysts

    NASA Astrophysics Data System (ADS)

    Jahel, Ali; Avenier, Priscilla; Lacombe, Sylvie; Olivier-Fourcade, Josette; Jumas, Jean-Claude

    2010-03-01

    Bimetallic Pt/Al2O3Sn-Cl and trimetallic Pt/Al2O3SnIn-Cl catalysts were characterized by H2/O2 double titration and 119Sn Mössbauer spectroscopy. The addition of Sn or both Sn and In to the monometallic Pt/Al2O3-Cl catalyst leads to an increase in the volume of chemisorbed O2 at each titration. For bimetallic and trimetallic catalysts the increase in the Pt dispersion, calculated from the second oxygen titre, abnormally surpasses the barrier of 100%. Characterization of samples obtained after each step of the H2/O2 titration sequence using 119Sn Mössbauer spectroscopy allowed to follow the redox transformations of Sn species suspected of contributing to O2 consumption. 119Sn Mössbauer spectra show that after reduction unalloyed metalic Sn and PtSn alloy phases are formed in bi- and trimetallic catalysts respectively. These metallic phases are oxidized upon the first oxygen titre into the so-called PtxSn(O) oxometalic phases. The index calculated from this titre thus expresses the Pt-Sn bimetallic character and is called the bimetallicity index (BMI). These latter phases further undergo reduction and regeneration (oxidation) upon the second O2 titre and thus contribute to the calculated Pt dispersion as well.

  12. The formation of tungsten doped Al2O3/ZnO coatings on aluminum by plasma electrolytic oxidation and their application in photocatalysis

    NASA Astrophysics Data System (ADS)

    Stojadinović, Stevan; Vasilić, Rastko; Radić, Nenad; Tadić, Nenad; Stefanov, Plamen; Grbić, Boško

    2016-07-01

    Tungsten doped Al2O3/ZnO coatings are formed by plasma electrolytic oxidation of aluminum substrate in supporting electrolyte (0.1 M boric acid + 0.05 M borax + 2 g/L ZnO) with addition of different concentrations of Na2WO4·2H2O. The morphology, crystal structure, chemical composition, and light absorption characteristics of formed surface coatings are investigated. The X-ray diffraction and X-ray photoelectron spectroscopy results indicate that formed surface coatings consist of alpha and gamma phase of Al2O3, ZnO, metallic tungsten and WO3. Obtained results showed that incorporated tungsten does not have any influence on the absorption spectra of Al2O3/ZnO coatings, which showed invariable band edge at about 385 nm. The photocatalytic activity of undoped and tungsten doped Al2O3/ZnO coatings is estimated by the photodegradation of methyl orange. The photocatalytic activity of tungsten doped Al2O3/ZnO coatings is higher thanof undoped Al2O3/ZnO coatings; the best photocatalytic activity is ascribed to coatings formed in supporting electrolyte with addition of 0.3 g/L Na2WO4·2H2O. Tungsten in Al2O3/ZnO coatings acts as a charge trap, thus reducing the recombination rate of photogenerated electron-hole pairs. The results of PL measurements are in agreement with photocatalytic activity. Declining PL intensity corresponds to increasing photocatalytic activity of the coatings, indicating slower recombination of electron-hole pairs.

  13. Oxidation of the GaAs semiconductor at the Al2O3/GaAs junction.

    PubMed

    Tuominen, Marjukka; Yasir, Muhammad; Lång, Jouko; Dahl, Johnny; Kuzmin, Mikhail; Mäkelä, Jaakko; Punkkinen, Marko; Laukkanen, Pekka; Kokko, Kalevi; Schulte, Karina; Punkkinen, Risto; Korpijärvi, Ville-Markus; Polojärvi, Ville; Guina, Mircea

    2015-03-14

    Atomic-scale understanding and processing of the oxidation of III-V compound-semiconductor surfaces are essential for developing materials for various devices (e.g., transistors, solar cells, and light emitting diodes). The oxidation-induced defect-rich phases at the interfaces of oxide/III-V junctions significantly affect the electrical performance of devices. In this study, a method to control the GaAs oxidation and interfacial defect density at the prototypical Al2O3/GaAs junction grown via atomic layer deposition (ALD) is demonstrated. Namely, pre-oxidation of GaAs(100) with an In-induced c(8 × 2) surface reconstruction, leading to a crystalline c(4 × 2)-O interface oxide before ALD of Al2O3, decreases band-gap defect density at the Al2O3/GaAs interface. Concomitantly, X-ray photoelectron spectroscopy (XPS) from these Al2O3/GaAs interfaces shows that the high oxidation state of Ga (Ga2O3 type) decreases, and the corresponding In2O3 type phase forms when employing the c(4 × 2)-O interface layer. Detailed synchrotron-radiation XPS of the counterpart c(4 × 2)-O oxide of InAs(100) has been utilized to elucidate the atomic structure of the useful c(4 × 2)-O interface layer and its oxidation process. The spectral analysis reveals that three different oxygen sites, five oxidation-induced group-III atomic sites with core-level shifts between -0.2 eV and +1.0 eV, and hardly any oxygen-induced changes at the As sites form during the oxidation. These results, discussed within the current atomic model of the c(4 × 2)-O interface, provide insight into the atomic structures of oxide/III-V interfaces and a way to control the semiconductor oxidation.

  14. Reduction of native oxides on InAs by atomic layer deposited Al2O3 and HfO2

    NASA Astrophysics Data System (ADS)

    Timm, R.; Fian, A.; Hjort, M.; Thelander, C.; Lind, E.; Andersen, J. N.; Wernersson, L.-E.; Mikkelsen, A.

    2010-09-01

    Thin high-κ oxide films on InAs, formed by atomic layer deposition, are the key to achieve high-speed metal-oxide-semiconductor devices. We have studied the native oxide and the interface between InAs and 2 nm thick Al2O3 or HfO2 layers using synchrotron x-ray photoemission spectroscopy. Both films lead to a strong oxide reduction, obtaining less than 10% of the native As-oxides and between 10% and 50% of the native In-oxides, depending on the deposition temperature. The ratio of native In- to As-oxides is determined to be 2:1. The exact composition and the influence of different oxidation states and suboxides is discussed in detail.

  15. Al/Al2O3 Metal Matrix Composites (MMCs) and Macrocomposites for Armor Applications

    DTIC Science & Technology

    2013-09-01

    ceramics (high hardness, high stiffness, low thermal expansion). In this study , Al/Al2O3 MMCs with alumina particle contents ranging from 12% to 46% were...expansion). In this study , Al/Al2O3 MMCs with alumina particle contents ranging from 12% to 46% were fabricated by different processing approaches...the different MMCs. The matrix alloy, alumina volume fraction, densities, mechanical properties , and thermal properties are summarized in Table 2

  16. Tb3+ ion doping into Al2O3: Solubility limit and luminescence properties

    NASA Astrophysics Data System (ADS)

    Onishi, Yuya; Nakamura, Toshihiro; Adachi, Sadao

    2016-11-01

    Tb3+-activated Al2O3 phosphors with a molar ratio of \\text{Al}:\\text{Tb} = (1 - x):x are synthesized by metal organic decomposition (x = 0-0.15) and subsequent calcination at T c = 200-1200 °C for 1 h in air. The material properties of the synthesized phosphors are investigated by X-ray diffraction (XRD), photoluminescence (PL) analyses, PL excitation spectroscopy, and luminescence lifetime measurements. At x = 0.015, the metastable phase of γ-Al2O3 is obtained by calcination at T c ˜ 300-1050 °C and a mixture of γ, θ, and α phases at T c ˜ 1050-1150 °C. The high-temperature stable phase of α-Al2O3 is obtained only at T c ≥ 1150 °C. Below T c ˜ 300 °C, the XRD data suggest the formation of boehmite (AlOOH). The solubility limit of Tb3+ in α-Al2O3 is also clearly determined to be x ˜ 0.015 (1.5%). The PL decay time of the Tb3+ green emission in α-Al2O3 is ˜1.1 ms for x < 0.015 and slowly decreases with further increase in x (Tb3+). The schematic energy-level diagram of Tb3+ in α-Al2O3 is proposed for a better understanding of the present phosphor system. Finally, the temperature dependence of the PL intensity is examined between T = 20 and 450 K, yielding quenching energies of E q ˜ 0.28 eV (α-Al2O3 and γ-Al2O3).

  17. Postperovskite phase equilibria in the MgSiO3-Al2O3 system.

    PubMed

    Tsuchiya, Jun; Tsuchiya, Taku

    2008-12-09

    We investigate high-P,T phase equilibria of the MgSiO(3)-Al(2)O(3) system by means of the density functional ab initio computation methods with multiconfiguration sampling. Being different from earlier studies based on the static substitution properties with no consideration of Rh(2)O(3)(II) phase, present calculations demonstrate that (i) dissolving Al(2)O(3) tends to decrease the postperovskite transition pressure of MgSiO(3) but the effect is not significant ( approximately -0.2 GPa/mol% Al(2)O(3)); (ii) Al(2)O(3) produces the narrow perovskite+postperovskite coexisting P,T area (approximately 1 GPa) for the pyrolitic concentration (x(Al2O3) approximately 6 mol%), which is sufficiently responsible to the deep-mantle D'' seismic discontinuity; (iii) the transition would be smeared (approximately 4 GPa) for the basaltic Al-rich composition (x(Al2O3) approximately 20 mol%), which is still seismically visible unless iron has significant effects; and last (iv) the perovskite structure spontaneously changes to the Rh(2)O(3)(II) with increasing the Al concentration involving small displacements of the Mg-site cations.

  18. Strength and formation of poor metals from insulators: bonds to bands in Al2O3 and H2

    NASA Astrophysics Data System (ADS)

    Nellis, W. J.

    2011-06-01

    HELs of Al2O3 and H2 are ~15 GPa and 0, respectively, while Al-O and H-H bond energies are both 4.5 eV and both are wide gap insulators at ambient. Al2O3 is a likely metallic glass at ~300 GPa; hydrogen is a metallic fluid at 140 GPa. How can such different materials at ambient both be disordered poor metals at 100 GPas? As McQueen pointed out, shock dissipation TS is absorbed in temperature T and entropy S (disorder). Because of strength, the split between T and S differs greatly between these two. H2s interact via weak pair interactions, which means high compressibility, high shock Ts, and dissociation (S) to monatomic metal at high pressures. Al and O atoms interact strongly via directional bonds in large 3D networks. Dissipation is first absorbed breaking bonds (S), which keeps T and thermal pressure low up to 400 GPa. Once most Al-O bonds are broken, Al2O3 is amorphous and atom densities so large that atomic wave functions probably overlap to form a metallic glass. Existing conductivity measurements to 220 GPa need to be extended to ~300 GPa to test this prediction.

  19. Pool boiling of water-Al2O3 and water-Cu nanofluids on horizontal smooth tubes

    PubMed Central

    2011-01-01

    Experimental investigation of heat transfer during pool boiling of two nanofluids, i.e., water-Al2O3 and water-Cu has been carried out. Nanoparticles were tested at the concentration of 0.01%, 0.1%, and 1% by weight. The horizontal smooth copper and stainless steel tubes having 10 mm OD and 0.6 mm wall thickness formed test heater. The experiments have been performed to establish the influence of nanofluids concentration as well as tube surface material on heat transfer characteristics at atmospheric pressure. The results indicate that independent of concentration nanoparticle material (Al2O3 and Cu) has almost no influence on heat transfer coefficient while boiling of water-Al2O3 or water-Cu nanofluids on smooth copper tube. It seems that heater material did not affect the boiling heat transfer in 0.1 wt.% water-Cu nanofluid, nevertheless independent of concentration, distinctly higher heat transfer coefficient was recorded for stainless steel tube than for copper tube for the same heat flux density. PMID:21711741

  20. Interface effects for the hydrogenation of CO2 on Pt4/γ-Al2O3

    NASA Astrophysics Data System (ADS)

    Liu, Yulu; Liu, Jie; Feng, Gang; Yin, Shi; Cen, Wanglai; Liu, Yongjun

    2016-11-01

    Density Functional Theory was applied to investigate the hydrogenation of CO2 to HCOO or CO on Pt4/γ-Al2O3(110) catalyst. It was found that the formation of CO is preferred to that of HCOO, kinetically and thermodynamically, indicating that methane can be formed on the Pt-based catalysts preferably. Furthermore, rather low an activation barrier (0.34 eV) for the formation of trans-COOH species was found, compared with that on Pt(111) surface (0.59 eV), showing that the interface between Pt4 cluster and γ-Al2O3(110) slab promotes the hydrogenation of CO2. However, the activation barrier for the dissociation of cis-COOH species on the supported catalyst is 0.91 eV, which is much higher than that on pure metal surface (0.56 eV). An electronic transfer channel was found to reconcile the divergence. Our results indicate that Pt/γ-Al2O3 should be a promising candidate for the catalytic hydrogenation of CO2 by adjusting the metal/support interface to balance the activation barriers for the formation of trans-COOH and the dissociation of cis-COOH species.

  1. Phase relations in the system MgSiO3-Al2O3 up to 52 GPa and 2000 K

    NASA Astrophysics Data System (ADS)

    Liu, Zhaodong; Irifune, Tetsuo; Nishi, Masayuki; Tange, Yoshinori; Arimoto, Takeshi; Shinmei, Toru

    2016-08-01

    Phase relations in the system MgSiO3-Al2O3 have been determined for pressures from 15 to 52 GPa and at a temperature of 2000 K from in situ synchrotron X-ray diffraction measurements obtained using sintered diamond anvils in a multi-anvil apparatus. A wide two-phase region of garnet and corundum is found to exist up to 27 GPa; at higher pressures, a phase assemblage of aluminous bridgmanite and corundum is stabilized. The solubility of Al2O3 in bridgmanite and that of MgSiO3 in corundum are highly dependent on pressure; the Al2O3 content in bridgmanite increases from 12 mol% at 27 GPa to 29 mol% at 52 GPa, forming bridgmanite with the pyrope composition (25 mol% Al2O3) at about 45 GPa. In contrast, the MgSiO3 content in corundum decreases from 24 mol% at 27 GPa to 9 mol% at 52 GPa. The minimum pressure where the pyropic bridgmanite is formed is significantly higher than the result of the earlier study (∼37 GPa) on the pyrope composition. These results suggest the Al2O3 content in bridgmanite and the MgSiO3 content in corundum are good pressure indicators in the mixed-phase region at pressures above 30 GPa, where virtually no pressure references are available for quench experiments. The new phase diagram in the system MgSiO3-Al2O3 confirms that bridgmanite is the dominant host mineral for Al2O3 in the pyrolitic or peridotitic compositions under the pressure and temperature conditions of the Earth's lower mantle.

  2. Nanocomposite YCrO3/Al2O3: characterization of the core-shell, magnetic properties, and enhancement of dielectric properties.

    PubMed

    Durán, A; Tiznado, H; Romo-Herrera, J M; Domínguez, D; Escudero, R; Siqueiros, J M

    2014-05-19

    Multifuncionality in polycrystalline multiferroic ceramics can be improved using an advanced synthesis process. In this work, core-shell design is being proposed to enhance the transport properties of biferroic YCrO3. The atomic layer deposition (ALD) thin-film growth technique was used for the YCrO3/Al2O3 (Y@Al) nanocomposite fabrication. A continuous, amorphous, and uniform Al2O3 shell, a few nanometers thick, was obtained and characterized by X-ray photoelectron spectroscopy, X-ray diffraction, and high-resolution transmission electron microscopy. The transport properties of biferroic YCrO3 coated with 50, 500, and 1000 ALD cycles of insulating Al2O3 were investigated using magnetization and AC conductivity measurements. It is observed that the values of the magnetic coercive field and the magnetization are affected by the amorphous and partially crystallized Al2O3 shell. Additionally, the Y@Al nanocomposite experiments show a notorious decreasing in the loss tangent and the electrical conductivity. Accordingly, hysteresis loops in the polarization versus electric energy data confirm the decrease of the leakage current as a consequence of the Al2O3 shell acting as a barrier layer. The results shown here confirm that the core-shell architecture is a promising alternative for improvement of the magnetic and ferroelectric properties in bulk multiferroics.

  3. Impacts of Annealing Conditions on the Flat Band Voltage of Alternate La2O3/Al2O3 Multilayer Stack Structures

    NASA Astrophysics Data System (ADS)

    Feng, Xing-Yao; Liu, Hong-Xia; Wang, Xing; Zhao, Lu; Fei, Chen-Xi; Liu, He-Lei

    2016-09-01

    The mechanism of flat band voltage (VFB) shift for alternate La2O3/Al2O3 multilayer stack structures in different annealing condition is investigated. The samples were prepared for alternate multilayer structures, which were annealed in different conditions. The capacitance-voltage (C-V) measuring results indicate that the VFB of samples shift negatively for thinner bottom Al2O3 layer, increasing annealing temperature or longer annealing duration. Simultaneously, the diffusion of high- k material to interfaces in different multilayer structures and annealing conditions is observed by X-ray photoelectron spectroscopy (XPS). Based on the dipole theory, a correlation between the diffusion effect of La towards bottom Al2O3/Si interface and VFB shift is found. Without changing the dielectric constant k of films, VFB shift can be manipulated by controlling the single-layer cycles and annealing conditions of alternate high- k multilayer stack.

  4. New battery strategies with a polymer/Al2O3 separator

    NASA Astrophysics Data System (ADS)

    Park, Kyusung; Cho, Joon Hee; Shanmuganathan, Kadhiravan; Song, Jie; Peng, Jing; Gobet, Mallory; Greenbaum, Steven; Ellison, Christopher J.; Goodenough, John B.

    2014-10-01

    A low-cost, thin, flexible, and mechanically robust alkali-ion electrolyte separator is shown to allow fabrication of a safe rechargeable alkali-ion battery with alternative cathode strategies. A Na-ion battery with an insertion host as cathode and a Li-ion battery with a redox flow-through cathode are demonstrated to cycle without significant fade. The separator membrane is a composite of Al2O3 particles and cross-linked ethylene-oxide chains; it can be fabricated at low cost into a large-area thin membrane that blocks dendrites from an alkali-metal anode. To block a soluble ferrocene redox molecule from crossing from the cathode side to the anode in a Li-ion battery with a redox-flow cathode, a thin mixed Li+/electronic-conducting film has been added to the cathode side of the composite separator. An osmosis issue was minimized by balancing concentrations of solutes on the two sides of the separator where the cathode side contains a soluble redox molecule.

  5. Internal photoemission in Ag-Al2O3-Al junctions

    NASA Technical Reports Server (NTRS)

    Guedes, J. M. P.; Slayman, C. W.; Gustafson, T. K.; Jain, R. K.

    1979-01-01

    The magnitude of the photon-induced current in Ag-Al2O3-Al metal-oxide-metal junctions has been studied as a function of photon energy and angle of incident radiation. Photocurrents were theoretically analyzed on the basis of a modified vacuum photoemission model (Jain, 1975; Slayman et al., to be published). Optical constants previously reported in the literature (Irani et al., 1971; Ehnrereich et al., 1963) were used to calculate the true spatial generation rate in Ag and Al as a function of the angle, polarization of incident radiation, and film thickness. Results were found to be in very good agreement with experimentally determined values for a tunable dye laser with a KDP doubling crystal pumped by a Q-switched Nd:YAG laser with a LiIO3 doubling crystal. The system provided risetimes of 50 ns or less and peak powers of 10 W. Under short circuit conditions, the photoresponse to incident power was linear up to available power densities of 10 kW/sq cm. Quantum efficiencies of about 0.1% at zero-bias, near 3.8 eV under P polarization, were typically observed.

  6. Structural and electronic properties of ZnO nanoparticles grown on p-Si and Al2O3 substrates by using spin coating and thermal treatment.

    PubMed

    No, Young Soo; Son, Dong Ick; Leem, Jae Hyeon; Kim, Su Youn; Oh, Do Hyun; Kim, Tae Whan

    2008-10-01

    ZnO nanoparticles were formed on p-Si and Al2O3 substrates by using spin coating and thermal treatment method. Scanning electron microscopy images and X-ray energy dispersive spectrometry profiles showed that ZnO nanoparticles were formed on p-Si and Al2O3 substrates. X-ray diffraction patterns showed that ZnO nanoparticles formed on the p-Si substrates had polycrystalline hexagonal wurtzite structures and that those formed on the Al2O3 substrates had a c-axis preferential orientation. X-ray photoelectron spectroscopy profiles showed that the O 1s and the Zn 2p peaks corresponding to the ZnO nanoparticles were observed.

  7. Synthesis of nanoporous Al2O3 membranes from polybutyl methacrylate functionalized SiO2 particles as a sacrificial template.

    PubMed

    Tseng, Wenjea J; Guo, Shiuan-Fu

    2012-10-01

    SiO2 surface is first modified with 3-trimethoxysilyl propyl methacrylate (MPS) in order to graft with polymerized butyl methacrylate (BMA) to form SiO2@MPS-BMA core--shell hybrid particles. The polymeric BMA shell enables anchoring of aluminum ions in tetrachloroethylene solvent, results in SiO2 @Al2O3 composite particles upon subjected to calcination. Removal of the SiO2 core by acid etching forms nanoporous gamma-Al2O3 membrane with a Horvath-Kawazoe (HK) pore size of 1.4 nm and a Brunauer-Emmett-Teller (BET) surface area of 78.6 m2 x g(-1). Transmission electron microscopy reveals formation of interconnected pore channels in the membrane. It is interesting to note that the Al2O3 membrane remains at a reasonably high surface area (53.9 m2 x g(-1)) after an isothermal holding at 1200 degrees C, when gamma-Al2O3 changed into predominately alpha-Al2O3. The process is indeed general and can be extended to the synthesis of other inorganic porous solids.

  8. Design of Al2O3/SiO2 laminated stacks with multiple interface dipole layers to achieve large flatband voltage shifts of MOS capacitors

    NASA Astrophysics Data System (ADS)

    Kamata, Hironobu; Kita, Koji

    2017-03-01

    We studied the dipole induced flatband voltage (VFB) shifts of Si MOS capacitors with Al2O3/SiO2/Al2O3/SiO2/Si laminated stacks ((Al2O3/SiO2)n/Si, n = 2) designed for a large positive shift of VFB. The VFB shift caused by each dipole layer was determined from capacitance-voltage characteristics by excluding the effect of fixed charges. Due to the additivity of multiple dipole layers in the laminated stack, a large VFB shift (>1 V) was observed. In our experimental condition, the dipole layers at Al2O3-on-SiO2 interfaces were selectively formed, while those at SiO2-on-Al2O3 interfaces were effectively suppressed. The validity of such additivity of VFB shifts induced by selectively formed dipole layers was also experimentally demonstrated for n ≥ 3 laminated stacks. An introduction of multiple dipole layers is applicable for a threshold voltage tuning in a wider range than the tuning with a single dipole layer.

  9. A study on Si / Al 2 O 3 paramagnetic point defects

    NASA Astrophysics Data System (ADS)

    Kühnhold-Pospischil, S.; Saint-Cast, P.; Hofmann, M.; Weber, S.; Jakes, P.; Eichel, R.-A.; Granwehr, J.

    2016-11-01

    In this contribution, negative charges and electronic traps related to the Si / Al 2 O 3 interface were measured and related to paramagnetic point defects and molecular vibrations. To this end, contactless capacitance voltage measurements, X-band electron paramagnetic resonance (EPR), and infrared spectroscopy were carried out, and their results were compared. A change in the negative charge density and electron trap density at the Si / Al 2 O 3 interface was achieved by adding a thermally grown SiO 2 layer with varying thicknesses and conducting an additional temperature treatment. Using EPR, five paramagnetic moments were detected in Si / ( SiO 2 ) / Al 2 O 3 samples with g values of g 1 = 2.0081 ± 0.0002 , g 2 = 2.0054 ± 0.0002 , g 3 = 2.0003 ± 0.0002 , g 4 = 2.0026 ± 0.0002 , and g 5 = 2.0029 ± 0.0002 . Variation of the Al 2 O 3 layer thickness shows that paramagnetic species associated with g1, g2, and g3 are located at the Si / Al 2 O 3 interface, and those with g4 and g5 are located within the bulk Al 2 O 3 . Furthermore, g1, g2, and g3 were shown to originate from oxygen plasma exposure during Al 2 O 3 deposition. Comparing the g values and their location within the Si / Al 2 O 3 system, g1 and g3 can be attributed to P b 0 centers, g3 to Si dangling bonds (Si-dbs), and g4 and g5 to rotating methyl radicals. All paramagnetic moments observed in this contribution disappear after a 5-min temperature treatment at 450 ° C . The deposition of an additional thermal SiO 2 layer between the Si and the Al 2 O 3 decreases the negative fixed charge density and defect density by about one order of magnitude. In this contribution, these changes can be correlated with a decrease in amplitude of the Si-db signal. P b 0 and the methyl radical signals were less affected by this additional SiO 2 layer. Based on these observations, microscopic models for the negative fixed charge density ( Q tot ) and the interface trap density ( D it ) and the connection between these

  10. Mechanical and morphological properties of polypropylene/nano α-Al2O3 composites.

    PubMed

    Mirjalili, F; Chuah, L; Salahi, E

    2014-01-01

    A nanocomposite containing polypropylene (PP) and nano α-Al2O3 particles was prepared using a Haake internal mixer. Mechanical tests, such as tensile and flexural tests, showed that mechanical properties of the composite were enhanced by addition of nano α-Al2O3 particles and dispersant agent to the polymer. Tensile strength was approximately ∼ 16% higher than pure PP by increasing the nano α-Al2O3 loading from 1 to 4 wt% into the PP matrix. The results of flexural analysis indicated that the maximum values of flexural strength and flexural modulus for nanocomposite without dispersant were 50.5 and 1954 MPa and for nanocomposite with dispersant were 55.88 MPa and 2818 MPa, respectively. However, higher concentration of nano α-Al2O3 loading resulted in reduction of those mechanical properties that could be due to agglomeration of nano α-Al2O3 particles. Transmission and scanning electron microscopic observations of the nanocomposites also showed that fracture surface became rougher by increasing the content of filler loading from 1 to 4% wt.

  11. Mechanical and Morphological Properties of Polypropylene/Nano α-Al2O3 Composites

    PubMed Central

    Mirjalili, F.; Chuah, L.; Salahi, E.

    2014-01-01

    A nanocomposite containing polypropylene (PP) and nano α-Al2O3 particles was prepared using a Haake internal mixer. Mechanical tests, such as tensile and flexural tests, showed that mechanical properties of the composite were enhanced by addition of nano α-Al2O3 particles and dispersant agent to the polymer. Tensile strength was approximately ∼16% higher than pure PP by increasing the nano α-Al2O3 loading from 1 to 4 wt% into the PP matrix. The results of flexural analysis indicated that the maximum values of flexural strength and flexural modulus for nanocomposite without dispersant were 50.5 and 1954 MPa and for nanocomposite with dispersant were 55.88 MPa and 2818 MPa, respectively. However, higher concentration of nano α-Al2O3 loading resulted in reduction of those mechanical properties that could be due to agglomeration of nano α-Al2O3 particles. Transmission and scanning electron microscopic observations of the nanocomposites also showed that fracture surface became rougher by increasing the content of filler loading from 1 to 4% wt. PMID:24688421

  12. Raman spectroscopic study of Ni/Al 2O 3 catalyst

    NASA Astrophysics Data System (ADS)

    Aminzadeh, A.; Sarikhani-fard, H.

    1999-07-01

    In this article a preliminary Raman spectroscopic study of Ni/Al 2O 3 catalyst of the type used for the steam reformation of methane is reported. With several prepared samples of this catalyst and using FT-Raman and conventional dispersive Raman technique, it is shown how Raman spectroscopy can be used to monitor the exact conditions during the preparation of the catalyst. Raman data shows that despite a strong fluorescence background, some useful information can be obtained. According to these data, when the calcination temperature is raised above 1000°C, the gamma alumina ( γ-Al 2O 3) is converted to alpha alumina ( α-Al 2O 3) as it is expected. It further shows that Ni is not present as NiO: it is probably embedded in the crystal structure of γ-Al 2O 3 as NiAl 2O 4 (the spinel structure) or constituted as a solid solution with Al 2O 3.

  13. (100) facets of γ-Al2O3: the active surfaces for alcohol dehydration reactions

    SciTech Connect

    Kwak, Ja Hun; Mei, Donghai; Peden, Charles HF; Rousseau, Roger J.; Szanyi, Janos

    2011-05-01

    Temperature programmed desorption (TPD) of ethanol, and methanol dehydration reaction were studied on γ-Al2O3 in order to identify the catalytic active sites for alcohol dehydration reactions. Two high temperature (> 473 K) desorption features were observed following ethanol adsorption. Samples calcined at T≤473 K displayed a desorption feature in the 523-533 K temperature range, while those calcined at T ≥ 673 K showed a single desorption feature at 498 K. The switch from the high to low temperature ethanol desorption correlated well with the dehydroxylation of the (100) facets of γ-Al2O3 that was predicted at 550 K DFT calculations. Theoretical DFT simulations of the mechanism of dehydration. on clean and hydroxylated γ-Al2O3(100) surfaces, find that a concerted elimination of ethylene from an ethanol molecule chemisorbed at an Al3+ pentacoordinated site is the rate limiting step for catalytic cycle on both surfaces. Furthermore, titration of the pentacoordinate Al3+ sites on the (100) facets of γ-Al2O3 by BaO completely turned off the methanol dehydration reaction activity. These results unambiguously demonstrate that only the (100) facets on γ-Al2O3 are the catalytic active surfaces for alcohol dehydration.

  14. Directionally solidified Al2O3/GAP eutectic ceramics by micro-pulling-down method

    NASA Astrophysics Data System (ADS)

    Cao, Xue; Su, Haijun; Guo, Fengwei; Tan, Xi; Cao, Lamei

    2016-11-01

    We reported a novel route to prepare directionally solidified (DS) Al2O3/GAP eutectic ceramics by micro-pulling-down (μ-PD) method. The eutectic crystallizations, microstructure characters and evolutions, and their mechanical properties were investigated in detail. The results showed that the Al2O3/GAP eutectic composites can be successfully fabricated through μ-PD method, possessed smooth surface, full density and large crystal size (the maximal size: φ90 mm × 20 mm). At the process of Diameter, the as-solidified Al2O3/GAP eutectic presented a combination of "Chinese script" and elongated colony microstructure with complex regular structure. Inside the colonies, the rod-type or lamellar-type eutectic microstructures with ultra-fine GAP surrounded by the Al2O3 matrix were observed. At an appropriate solidificational rate, the binary eutectic exhibited a typical DS irregular eutectic structure of "chinese script" consisting of interpenetrating network of α-Al2O3 and GAP phases without any other phases. Therefore, the interphase spacing was refined to 1-2 µm and the irregular microstructure led to an outstanding vickers hardness of 17.04 GPa and fracture toughness of 6.3 MPa × m1/2 at room temperature.

  15. Reduction and desorption of native oxides on GaAs and Ge during atomic layer deposition of Al2O3

    NASA Astrophysics Data System (ADS)

    Lee, Hang Dong; Feng, Tian; Yu, Lei; Mastrogiovanni, Daniel; Wan, Alan; Gustafsson, Torgny; Garfunkel, Eric

    2010-03-01

    The reduction of native oxides and control of interfacial defects is of central importance if materials such as GaAs and Ge are to be used for post-Si CMOS. We and others have earlier observed that under certain conditions such oxides are removed during atomic layer deposition (ALD) growth. We find, using medium energy ion scattering spectroscopy (MEIS) and XPS, that after just a single ALD half cycle (exposure to a trimethylaluminum (TMA) precursor) ˜65% of the native oxide is removed and a 5 å oxygen-rich aluminum oxide is formed. The source for the oxygen in the aluminum oxide is therefore the native oxide. For Ge substrates, one single TMA pulse removes a substantial amount of the native oxides and a 3å Al2O3 film is grown. The native oxides are also completely removed after > 450 C preheating of the substrate. The mechanisms for these processes will be discussed.

  16. Quick photo-Fenton degradation of phenolic compounds by Cu/Al2O3-MCM-41 under visible light irradiation: small particle size, stabilization of copper, easy reducibility of Cu and visible light active material.

    PubMed

    Pradhan, Amaresh C; Nanda, Binita; Parida, K M; Das, Mira

    2013-01-14

    The present study reports the photo-Fenton degradation of phenolic compounds (phenol, 2-chloro-4-nitrophenol and 4-chloro-2-nitrophenol) in aqueous solution using mesoporous Cu/Al(2)O(3)-MCM-41 nanocomposite as a heterogeneous photo-Fenton-like catalyst. The in situ incorporation of mesoporous Al(2)O(3) (MA) into the framework of MCM-41 (sol-gel method) forms Al(2)O(3)-MCM-41 and wetness impregnation of Cu(II) on Al(2)O(3)-MCM-41 generates mesoporous Cu/Al(2)O(3)-MCM-41 composite. The effects of pH and H(2)O(2) concentration on degradation of phenol, 2-chloro-4-nitrophenol and 4-chloro-2-nitrophenol are studied. Kinetics analysis shows that the photocatalytic degradation reaction follows a first-order rate equation. Mesoporous 5 Cu/Al(2)O(3)-MCM-41 is found to be an efficient photo-Fenton-like catalyst for the degradation of phenolic compounds. It shows nearly 100% degradation in 45 min at pH 4. The combined effect of small particle size, stabilization of Cu(2+) on the support Al(2)O(3)-MCM-41, ease reducibility of Cu(2+) and visible light activeness are the key factors for quick degradation of phenolic compounds by Cu/Al(2)O(3)-MCM-41.

  17. Glycerol Steam Reforming Over Ni-Fe-Ce/Al2O3 Catalyst: Effect of Cerium.

    PubMed

    Go, Gwang-Sub; Go, Yoo-Jin; Lee, Hong-Joo; Moon, Dong-Ju; Park, Nam-Cook; Kim, Young-Chul

    2016-02-01

    In this work, hydrogen production from glycerol by steam reforming was studied using Ni-metal oxide catalysts. Ni-based catalyst becomes deactivated during steam reforming reactions because of coke deposits and sintering. Therefore, the aim of this study was to reduce carbon deposits and sintering on the catalyst surface by adding a promoter. Ni-metal oxide catalysts supported on Al2O3 were prepared via impregnation method, and the calcined catalyst was reduced under H2 flow for 2 h prior to the reaction. The characteristics of the catalysts were examined by XRD, TPR, TGA, and SEM. The Ni-Fe-Ce/Al2O3 catalyst, which contained less than 2 wt% Ce, showed the highest hydrogen selectivity and glycerol conversion. Further analysis of the catalysts revealed that the Ni-Fe-Ce/Al2O3 catalyst required a lower reduction temperature and produced minimum carbon deposit.

  18. Anchorage of γ-Al2O3 nanoparticles on nitrogen-doped multiwalled carbon nanotubes

    DOE PAGES

    Rodríguez-Pulido, A.; Martínez-Gutiérrez, H.; Calderon-Polania, G. A.; ...

    2016-06-07

    Nitrogen-doped multiwalled carbon nanotubes (CNx-MWNTs) have been decorated with γ-Al2O3 nanoparticles by a novel method. This process involved a wet chemical approach in conjunction with thermal treatment. During the particle anchoring process, individual CNx-MWNT nanotubes agglomerated into bundles, resulting in arrays of aligned CNx-MWNT coated with γ-Al2O3. Extensive characterization of the resulting γ-Al2O3/CNx-MWNT bundles was performed using a range of electron microscopy imaging and microanalytical techniques. In conclusion, a possible mechanism explaining the nanobundle alignment is described, and possible applications of these materials for the fabrication of ceramic composites using CNx-MWNTs are briefly discussed.

  19. Growth, Quantitative Growth Analysis, and Applications of Graphene on γ-Al2O3 catalysts

    PubMed Central

    Park, Jaehyun; Lee, Joohwi; Choi, Jung-Hae; Hwang, Do Kyung; Song, Yong-Won

    2015-01-01

    The possibilities offered by catalytic γ-Al2O3 substrates are explored, and the mechanism governing graphene formation thereon is elucidated using both numerical simulations and experiments. The growth scheme offers metal-free synthesis at low temperature, grain-size customization, large-area uniformity of electrical properties, single-step preparation of graphene/dielectric structures, and readily detachable graphene. We quantify based on thermodynamic principles the activation energies associated with graphene nucleation/growth on γ-Al2O3, verifying the low physical and chemical barriers. Importantly, we derive a universal equation governing the adsorption-based synthesis of graphene over a wide range of temperatures in both catalytic and spontaneous growth regimes. Experimental results support the equation, highlighting the catalytic function of γ-Al2O3 at low temperatures. The synthesized graphene is manually incorporated as a ‘graphene sticker’ into an ultrafast mode-locked laser. PMID:26137994

  20. Electrical Double Layer Capacitance in a Graphene-embedded Al2O3 Gate Dielectric

    PubMed Central

    Ki Min, Bok; Kim, Seong K.; Jun Kim, Seong; Ho Kim, Sung; Kang, Min-A; Park, Chong-Yun; Song, Wooseok; Myung, Sung; Lim, Jongsun; An, Ki-Seok

    2015-01-01

    Graphene heterostructures are of considerable interest as a new class of electronic devices with exceptional performance in a broad range of applications has been realized. Here, we propose a graphene-embedded Al2O3 gate dielectric with a relatively high dielectric constant of 15.5, which is about 2 times that of Al2O3, having a low leakage current with insertion of tri-layer graphene. In this system, the enhanced capacitance of the hybrid structure can be understood by the formation of a space charge layer at the graphene/Al2O3 interface. The electrical properties of the interface can be further explained by the electrical double layer (EDL) model dominated by the diffuse layer. PMID:26530817

  1. Electrical Double Layer Capacitance in a Graphene-embedded Al2O3 Gate Dielectric.

    PubMed

    Ki Min, Bok; Kim, Seong K; Jun Kim, Seong; Ho Kim, Sung; Kang, Min-A; Park, Chong-Yun; Song, Wooseok; Myung, Sung; Lim, Jongsun; An, Ki-Seok

    2015-11-04

    Graphene heterostructures are of considerable interest as a new class of electronic devices with exceptional performance in a broad range of applications has been realized. Here, we propose a graphene-embedded Al2O3 gate dielectric with a relatively high dielectric constant of 15.5, which is about 2 times that of Al2O3, having a low leakage current with insertion of tri-layer graphene. In this system, the enhanced capacitance of the hybrid structure can be understood by the formation of a space charge layer at the graphene/Al2O3 interface. The electrical properties of the interface can be further explained by the electrical double layer (EDL) model dominated by the diffuse layer.

  2. Ionic conductivity and thermoelectric power of pure and Al2O3-dispersed AgI

    NASA Technical Reports Server (NTRS)

    Shahi, K.; Wagner, J. B., Jr.

    1981-01-01

    Ionic and electronic conductivities, and thermoelectric power have been measured for AgI and AgI containing a dispersion of submicron size Al2O3 particles. While the dispersion of Al2O3 enhances the ionic conductivity significantly, it does not affect the electronic properties of the matrix. The enhancement is a strong function of the size and concentration of the dispersoid. Various models have been tested to account for the enhanced conduction. However, the complex behavior of the present results points out the need for more sophisticated theoretical models. Ionic conduction and thermoelectric power data suggest that the dispersed Al2O3 generates an excess of cation vacancies and thereby enhances the conductivity and suppresses the thermoelectric power of the matrix. The individual heats of transport of cation interstitials and vacancies have been estimated and compared to their respective migration energies.

  3. Surface reactions of dimethyl ether on γ-Al2O3

    NASA Astrophysics Data System (ADS)

    Bondarenko, G. N.; Volnina, E. A.; Kipnis, M. A.; Rodionov, A. S.; Samokhin, P. V.; Lin, G. I.

    2016-02-01

    The surface reactions of dimethyl ether (DME) on industrial alumina (γ-Al2O3) were studied by chromatographic analysis of the products at the outlet of the flow reactor and (independently) by diffuse reflectance IR spectroscopy. The major products of the reactions at 250°C were found to be methanol formed in the reaction of DME with hydroxyl groups (the 3720 and 3674 cm-1 bands in the diffuse reflectance spectrum) and various methoxy groups (the 1121, 1070, 695, and 670 cm-1 bands in the differential spectra). The presence of molecularly adsorbed methanol was confirmed by experiments with methanol fed in a high-temperature IR cell. The interaction of the resulting methanol molecule with the hydroxyl group led to the formation of a water molecule in the gas phase and a methoxy group on the oxide surface. Strong adsorption of molecular DME was revealed, which was favored by an increase in the temperature of the preliminary calcination of oxide from 250 to 450-500°C; treatment of alumina with water vapor after its preliminary contact with DME led to a recovery of the hydroxyl coating and a replacement of molecularly adsorbed DME with hydroxyl. The thermal effect recorded in a flow reactor was positive during the adsorption of DME and negative during the desorption of weakly bonded DME. Schemes of formation of methoxy groups in the interaction of DME and methanol with surface hydroxyls were suggested.

  4. Study of LDPE/Al2O3 composite material as substrate for microstrip antenna

    NASA Astrophysics Data System (ADS)

    Sarmah, Debashis; Bhattacharyya, N. S.; Bhattacharyya, S.; Gogoi, J. P.

    2013-01-01

    Low density polyethylene (LDPE)/Alumina (Al2O3) composite systems have been studied as an alternate substrate for microstrip patch antennas (MPA). Morphological, thermal and microwave characterizations of the composites are carried out for different volume fractions of Al2O3 in the LDPE matrix. The size and the distribution of alumina particles are quite uniform in the composite. Enhancement of thermal and microwave properties of the composite over the parent polymer is observed. Simple rectangular MPA in X-band is fabricated on the composite material to verify its applicability as substrates for MPA. A return loss of ~ -26dB is observed at the design frequency.

  5. High Temperature Aerogels in the Al2O3-SiO2 System

    NASA Technical Reports Server (NTRS)

    Hurwitz, Frances I.; Aranda, Denisse V.; Gallagher, Meghan E.

    2008-01-01

    Al2O3-SiO2 aerogels are of interest as constituents of thermal insulation systems for use at high temperatures. Al2O3 and mullite aerogels are expected to crystallize at higher temperatures than their SiO2 counterparts, hence avoiding the shrinkages that accompany the formation of lower temperature SiO2 phases and preserving pore structures into higher temperature regimes. The objective of this work is to determine the influence of processing parameters on shrinkage, gel structure (including surface area, pore size and distribution) and pyrolysis behavior.

  6. Surface passivation of gallium nitride by ultrathin RF-magnetron sputtered Al2O3 gate.

    PubMed

    Quah, Hock Jin; Cheong, Kuan Yew

    2013-08-14

    An ultrathin RF-magnetron sputtered Al2O3 gate on GaN subjected to postdeposition annealing at 800 °C in O2 ambient was systematically investigated. A cross-sectional energy-filtered transmission electron microscopy revealed formation of crystalline Al2O3 gate, which was supported by X-ray diffraction analysis. Various current conduction mechanisms contributing to leakage current of the investigated sample were discussed and correlated with metal-oxide-semiconductor characteristics of this sample.

  7. Effect of Process Parameters on Microstructure and Micro-hardness of AZ91/Al2O3 Surface Composite Produced by FSP

    NASA Astrophysics Data System (ADS)

    Faraji, Ghader; Dastani, Omid; Mousavi, S. Ali Asghar Akbari

    2011-12-01

    In this article, the effects of three different sizes of Al2O3 particles in the friction stir processing on grain size, cluster size, microstructure, and micro-hardness of as-cast magnesium alloy AZ91 were investigated. Moreover, the effects of two types of tool geometries and number of passes on the mentioned parameters were considered. Effect of mentioned parameters on microstructure, grain refinement, and micro-hardness profile in the friction stirred zone of the specimens was compared by as-cast received form and also friction stir processed (FSPed) specimens without particles. Microstructural characterization of the materials revealed reasonably uniform distribution of Al2O3 reinforcement and significant grain refinement. Hardness studies revealed that the incorporation of nano- and micro-size Al2O3 particulates in magnesium matrix led to a simultaneous increase in hardness.

  8. A comparison of the doppler-broadened positron annihilation spectra of neutron irradiated Al 2O 3 and MgAl 2O 3

    NASA Astrophysics Data System (ADS)

    Jones, P. L.; Schaffer, J. P.; Cocks, F. H.; Clinard, F. W.; Hurley, G. F.

    1985-01-01

    Radiation damage studies of oxides and ceramics have become of increasing importance due to the projected use of these materials in thermonuclear fusion reactors as electronic insulators and first wall materials. In addition these materials are important in RAD waste disposal. As part of a study of the defect structure in radiation damaged ceramics Doppler-broadened positron annihilation spectra have been obtained for a series of single crystal sapphire (α-Al 2O 3) and polycrystal (1:1) and (1:2) magnesium aluminate spinel (MgO·Al 2O 3 and MgO-2Al 2O 3) samples. These samples were irradiated in EBR-II to a fluence of 3 × 10 25 n/m 2 (E > 0.1 MeV) at 740°C, and 2 × 10 26 n/m 2 (E > 0.1 MeV) at ~ 550°C respectively. Positron annihilation spectra lineshapes for the irradiated, annealed, and as-received samples of both materials were compared using S parameter analysis. These calculations were made on deconvoluted gamma ray spectra that were free of any instrumental broadening effects. In this way, absolute S parameter changes could be calculated. The observed changes in the S parameter are consistent with independent volume swelling measurements for both the α-A1 2O 3 and the (1:2) MgAl 2O 4 samples. However, the change in S parameter measured for the (1:1) spinel is contrary to the measured volume change. This apparent anomaly indicates a predominence of interstitial as opposed to vacancy type defects in this material.

  9. Oxides formation on hydrophilic bonding interface in plasma-assisted InP/Al2O3/SOI direct wafer bonding

    NASA Astrophysics Data System (ADS)

    Gong, Kewei; Sun, Changzheng; Xiong, Bing; Han, Yanjun; Hao, Zhibiao; Wang, Jian; Wang, Lai; Li, Hongtao

    2017-01-01

    Successful direct wafer bonding between InP and silicon-on-insulator (SOI) wafers has been demonstrated by adopting a 20-nm-thick Al2O3 as the intermediate layer. A detailed investigation on the property of the bonding interface is carried out. Water contact angle test reveals an improved hydrophilicity for both the InP and the Al2O3/SOI wafers after oxygen plasma surface activation. X-ray photoelectron spectroscopy is employed to characterize the bonding interface before and after the wafer bonding process. It is found that oxides are formed on the bonding interface during bonding, which helps ensure high quality hydrophilic bonding.

  10. Optical spectroscopy of RE3 ions in sol-gel prepared α-Al2O3

    NASA Astrophysics Data System (ADS)

    Feofilov, S. P.; Kaplyanskii, A. A.; Kulinkin, A. B.; Kutsenko, A. B.; Vasilevskaya, T. N.; Zakharchenya, R. I.

    The monolithic polycrystalline small-grain corundum α-Al2O3 doped with trivalent rare earth ions RE3+ (Eu3+, Er3+, Pr3+) was produced for the first time using the sol-gel technology. The fluorescence and absorption spectra of these materials were studied which exhibit the sets of narrow lines belonging to f-f transitions between RE3+ states. It was shown that Eu3+ and Er3+ ions form in corundum lattice the single dominating type of regular centers. The energy scheme of Stark sublevels for ground and excited states of dominating Eu3+ and Er3+ centers in corundum was determined.

  11. Network topology for the formation of solvated electrons in binary CaO–Al2O3 composition glasses

    PubMed Central

    Akola, Jaakko; Kohara, Shinji; Ohara, Koji; Fujiwara, Akihiko; Watanabe, Yasuhiro; Masuno, Atsunobu; Usuki, Takeshi; Kubo, Takashi; Nakahira, Atsushi; Nitta, Kiyofumi; Uruga, Tomoya; Weber, J. K. Richard; Benmore, Chris J.

    2013-01-01

    Glass formation in the CaO–Al2O3 system represents an important phenomenon because it does not contain typical network-forming cations. We have produced structural models of CaO–Al2O3 glasses using combined density functional theory–reverse Monte Carlo simulations and obtained structures that reproduce experiments (X-ray and neutron diffraction, extended X-ray absorption fine structure) and result in cohesive energies close to the crystalline ground states. The O–Ca and O–Al coordination numbers are similar in the eutectic 64 mol % CaO (64CaO) glass [comparable to 12CaO·7Al2O3 (C12A7)], and the glass structure comprises a topologically disordered cage network with large-sized rings. This topologically disordered network is the signature of the high glass-forming ability of 64CaO glass and high viscosity in the melt. Analysis of the electronic structure reveals that the atomic charges for Al are comparable to those for Ca, and the bond strength of Al–O is stronger than that of Ca–O, indicating that oxygen is more weakly bound by cations in CaO-rich glass. The analysis shows that the lowest unoccupied molecular orbitals occurs in cavity sites, suggesting that the C12A7 electride glass [Kim SW, Shimoyama T, Hosono H (2011) Science 333(6038):71–74] synthesized from a strongly reduced high-temperature melt can host solvated electrons and bipolarons. Calculations of 64CaO glass structures with few subtracted oxygen atoms (additional electrons) confirm this observation. The comparable atomic charges and coordination of the cations promote more efficient elemental mixing, and this is the origin of the extended cage structure and hosted solvated (trapped) electrons in the C12A7 glass. PMID:23723350

  12. Network topology for the formation of solvated electrons in binary CaO-Al2O3 composition glasses.

    PubMed

    Akola, Jaakko; Kohara, Shinji; Ohara, Koji; Fujiwara, Akihiko; Watanabe, Yasuhiro; Masuno, Atsunobu; Usuki, Takeshi; Kubo, Takashi; Nakahira, Atsushi; Nitta, Kiyofumi; Uruga, Tomoya; Weber, J K Richard; Benmore, Chris J

    2013-06-18

    Glass formation in the CaO-Al2O3 system represents an important phenomenon because it does not contain typical network-forming cations. We have produced structural models of CaO-Al2O3 glasses using combined density functional theory-reverse Monte Carlo simulations and obtained structures that reproduce experiments (X-ray and neutron diffraction, extended X-ray absorption fine structure) and result in cohesive energies close to the crystalline ground states. The O-Ca and O-Al coordination numbers are similar in the eutectic 64 mol % CaO (64CaO) glass [comparable to 12CaO·7Al2O3 (C12A7)], and the glass structure comprises a topologically disordered cage network with large-sized rings. This topologically disordered network is the signature of the high glass-forming ability of 64CaO glass and high viscosity in the melt. Analysis of the electronic structure reveals that the atomic charges for Al are comparable to those for Ca, and the bond strength of Al-O is stronger than that of Ca-O, indicating that oxygen is more weakly bound by cations in CaO-rich glass. The analysis shows that the lowest unoccupied molecular orbitals occurs in cavity sites, suggesting that the C12A7 electride glass [Kim SW, Shimoyama T, Hosono H (2011) Science 333(6038):71-74] synthesized from a strongly reduced high-temperature melt can host solvated electrons and bipolarons. Calculations of 64CaO glass structures with few subtracted oxygen atoms (additional electrons) confirm this observation. The comparable atomic charges and coordination of the cations promote more efficient elemental mixing, and this is the origin of the extended cage structure and hosted solvated (trapped) electrons in the C12A7 glass.

  13. Modifying γ-Al2O3 surface with Y2Sn2O7 pyrochlore: on monolayer dispersion behaviour of composite oxides.

    PubMed

    Xu, Xianglan; Liu, Fang; Tian, Jinshu; Peng, Honggen; Liu, Wenming; Fang, Xiuzhong; Zhang, Ning; Wang, Xiang

    2017-03-21

    To investigate the dispersion behaviours of composite oxides onto the supports, and to achieve better supports for Pd for CO oxidation, a series of Y2Sn2O7/Al2O3 composite oxides with different Y2Sn2O7 loadings were prepared via deposition-precipitation method. Using XRD and XPS extrapolation methods, it is revealed that similar to single component metal oxides, composite oxides can also disperse spantaneously onto the support surfaces to form a monlayer with a certain capacity. The monolayer dispersion capacity/threshhold for Y2Sn2O7 on γ-Al2O3 surface is 0.109 mmol*100 m-2 γ-Al2O3, equalling to 7.2% Y2Sn2O7 weight loading. It is deserved to mention here that this is the first work to demonstrate the monolayer dispersion phenomenon of a composite oxide on a support. After the combination of Y2Sn2O7 with γ-Al2O3, active oxygen species can be introduced onto the catalyst surfaces. Therefore, the interaction between Pd and the supports can be strengthened, thus improving the Pd dispersion in comparison with the individual Y2Sn2O7 support and inducing synergistic effect between Pd and the composite supports, which is beneficial to the activity of the catalysts. By tuning the γ-Al2O3 surface with different amount of pyrochlore Y2Sn2O7 compound, the CO oxidation activity on the 1%Pd/Y2Sn2O7/Al2O3 has been improved. These findings may put new insights for people to design and prepare competitve supported noble metal catalysts with less amount of noble metals.

  14. Synthesis of Al2O3 nanoparticles highly distributed in YBa2Cu3O7 superconductor by citrate-nitrate auto-combustion reaction

    NASA Astrophysics Data System (ADS)

    Suan, Mohd Shahadan Mohd; Johan, Mohd Rafie

    2013-09-01

    The effects of Al2O3 nanoparticles on the structure and superconducting properties of YBa2Cu3O7-δ matrix prepared by auto-combustion reaction were investigated. The auto-combustion reaction has successfully transformed the Al nitrate added YBCO precursor gels to very fine ashes which yielded to Al2O3 and YBCO phases after the calcination process at 900 °C. The resultant reactions produced nanocrystalline YBa2Cu3O7-δ powders having well distributed Al2O3 nanoparticles (∼10 nm). The TG/DTA analysis reveals that the Al nitrate added precursor gels decomposed by two-steps reaction at temperature of 180 and 220 °C due to the decomposition of Al nitrate followed by Y, Ba and Cu nitrates. The XRD pattern showed the orthorhombic structure of Al2O3 added YBa2Cu3O7-δ powders having the particle size ranged in between 20 and 25 nm. SEM analysis showed that Al2O3 nanoparticles were distributed along the grain boundaries of YBa2Cu3O7-δ matrix for the higher mol of Al nitrate. The higher concentration of Al2O3 reacts with the YBa2Cu3O7 matrix to form Al3+ rich spots and diffuse within the YBa2Cu3O7-δ superconducting matrix which was confirmed by EDX analysis. The samples produced in this work were electrically superconducting at temperature above 85 K as measured by using standard four-probe technique. Formation of alumina precipitates and incorporation of Al3+ into YBa2Cu3O7-δ structure was found to significantly reduce the Tc of pure YBa2Cu3O7-δ.

  15. [Research on SCR denitrification of MnOx/Al2O3 modified by CeO2 and its mechanism at low temperature].

    PubMed

    Guo, Jing; Li, Cai-Ting; Lu, Pei; Cui, Hua-Fei; Peng, Dun-Liang; Wen, Qing-Bo

    2011-08-01

    The Al2O3,which has large specific surface area and is used as carrier,was prepared by sol-gel method in this study. Series catalysts of MnOx, CeO2 plus MnOx supported on Al2O3 by isometric impregnation method. The SCR denitrification experimental conditions were as follows: NH3 as reductive agent, certain gas velocity and suitable ratio of gas mixed was setup. Furthermore, the experiments of BET, XRD and SEM were also carried out respectively in order to obtain physicochemical properties of the prepared catalysts. The experimental results showed that the loading of active component and calcination temperature made a big difference to the catalysts' performance. With appropriate addition of CeO2, MnOx/Al2O3 exhibits better activity and stability. For MnOx/Al2O3, the catalytic activity on NO was greatly influenced by its loaded content, and 7% MnOx/Al2O3 showed superior catalytic activity among the MnOx/Al2O3. The addition of CeO2 could greatly improve the dispersibility of MnOx on the carrier and increase its catalytic activity. The 4% CeO2 addition was the optimum loaded mass precent. Forthermore, 550 degrees C is the best calcination temperature, as MnOx formed different crystalline phases with temperature, at the same time, the addition of CeO2 could affect MnOx crystalline phase. The catalytic mechanism of SCR on NO was also discussed.

  16. Synthesis of MgO nanoparticle loaded mesoporous Al2O3 and its defluoridation study

    NASA Astrophysics Data System (ADS)

    Dayananda, Desagani; Sarva, Venkateswara R.; Prasad, Sivankutty V.; Arunachalam, Jayaraman; Parameswaran, Padmanabhan; Ghosh, Narendra N.

    2015-02-01

    MgO nanoparticle loaded mesoporous alumina has been synthesized using a simple aqueous solution based cost effective method for removal of fluoride from water. Wide angle powder X-ray diffraction, nitrogen adsorption desorption analysis, transmission electron microscopy techniques and energy dispersive X-ray spectroscopy were used to characterize the synthesized adsorbents. Synthesized adsorbents possess high surface area with mesoporous structure. The adsorbents have been thoroughly investigated for the adsorption of F- using batch adsorption method. MgO nanoparticle loading on mesoporous Al2O3 enhances the F- adsorption capacity of Al2O3 from 56% to 90% (initial F- concentration = 10 mg L-1). Kinetic study revealed that adsorption kinetics follows the pseudo-second order model, suggesting the chemisorption mechanism. The F- adsorption isotherm data was explained by both Langmuir and Freundlich model. The maximum adsorption capacity of 40MgO@Al2O3 was 37.35 mg g-1. It was also observed that, when the solutions having F- concentration of 5 mg L-1 and 10 mg L-1 was treated with 40MgO@Al2O3, the F- concentration in treated water became <1 mg L-1, which is well below the recommendation of WHO.

  17. Crack-resistant Al2O3–SiO2 glasses

    NASA Astrophysics Data System (ADS)

    Rosales-Sosa, Gustavo A.; Masuno, Atsunobu; Higo, Yuji; Inoue, Hiroyuki

    2016-04-01

    Obtaining “hard” and “crack-resistant” glasses have always been of great important in glass science and glass technology. However, in most commercial glasses both properties are not compatible. In this work, colorless and transparent xAl2O3–(100–x)SiO2 glasses (30 ≤ x ≤ 60) were fabricated by the aerodynamic levitation technique. The elastic moduli and Vickers hardness monotonically increased with an increase in the atomic packing density as the Al2O3 content increased. Although a higher atomic packing density generally enhances crack formation in conventional oxide glasses, the indentation cracking resistance increased by approximately seven times with an increase in atomic packing density in binary Al2O3–SiO2 glasses. In particular, the composition of 60Al2O3•40SiO2 glass, which is identical to that of mullite, has extraordinary high cracking resistance with high elastic moduli and Vickers hardness. The results indicate that there exist aluminosilicate compositions that can produce hard and damage-tolerant glasses.

  18. Reduction of nitrotoluenes in supercritical isopropanol over Al2O3 in a flow reactor

    NASA Astrophysics Data System (ADS)

    Sivcev, V. P.; Korchagina, D. V.; Volcho, K. P.; Salakhutdinov, N. F.; Anikeev, V. I.

    2015-02-01

    The reduction of o-, m-, and p-nitrotoluenes in supercritical isopropanol over Al2O3 in a flow reactor is studied. It is shown that corresponding toluidines are major reaction products. Aromatic ring alkoxylation and N-alkylation products make a considerable contribution to the composition of reaction mixtures.

  19. Complete oxidation of volatile organic compounds over Ce/Cu/gamma-AL2O3 catalyst.

    PubMed

    Kim, S C; Shim, W G

    2008-05-01

    The effect of cerium (Ce) addition into Cu (5, 10 or 15 wt%)/gamma-Al2O3 catalysts on the catalyst properties and catalytic activity was investigated for the complete oxidation of volatile organic compounds (VOCs). X-ray diffraction (XRD), the Brunauer Emmett Teller method (BET), temperature programmed reduction (TPR) by H2, and N2O pulse titration were used to characterize a series of supported copper catalysts modified with cerium. Cerium was observed to be an inhibitor for 5 wt% and promoter for 10 or 15 wt% Cu/gamma-Al2O3 catalyst. The results of TPR, average crystallite size and dispersion indicated that even though Ce loadings on 10 and 15 wt% Cu/gamma-Al2O3 caused a reduction in BET surface area of the catalysts, the loaded amounts of Ce enhanced the catalytic activity through the formation of highly dispersed copper clusters. Kinetic parameters were developed for individual benzene, toluene and o-xylene (BTX) for 5 wt% Ce/10 wt% Cu/gamma-Al2O3 catalyst at temperatures ranging from 210 to 240 degrees C. The Mars and Van Krevelen model was found to be an adequate description of the catalytic oxidation of BTX for this study. The activity sequence with respect to the BTX molecules was found to be benzene > toluene > o-xylene under the surface-reaction-controlled region.

  20. Preparation and catalytic behavior of CeO2 nanoparticles on Al2O3 crystal

    NASA Astrophysics Data System (ADS)

    Hattori, Takashi; Kobayashi, Katsutoshi; Ozawa, Masakuni

    2017-01-01

    In this work, we examined the preparation, morphology, and catalytic behavior of CeO2 nanoparticles (NPs) on Al2O3(0001) crystal substrates. A CeO2 NP layer was prepared by the dipping method using a CeO2 nanocrystal colloid solution. Even after heat treatment at 1000 °C, the CeO2 NP layer maintained the granular morphology of CeO2 with a grain diameter of less than 40 nm. CeO2 NPs on an Al2O3 crystal showed higher oxidation activity for gaseous hydrogen at moderate temperatures and enhanced oxygen release properties of CeO2, compared with CeO2 powder. This was due to the highly dispersed CeO2 NPs and the interaction between CeO2 NPs and Al2O3; this clarified the importance of the Al2O3 support for the CeO2 catalyst.

  1. Crack-resistant Al2O3–SiO2 glasses

    PubMed Central

    Rosales-Sosa, Gustavo A.; Masuno, Atsunobu; Higo, Yuji; Inoue, Hiroyuki

    2016-01-01

    Obtaining “hard” and “crack-resistant” glasses have always been of great important in glass science and glass technology. However, in most commercial glasses both properties are not compatible. In this work, colorless and transparent xAl2O3–(100–x)SiO2 glasses (30 ≤ x ≤ 60) were fabricated by the aerodynamic levitation technique. The elastic moduli and Vickers hardness monotonically increased with an increase in the atomic packing density as the Al2O3 content increased. Although a higher atomic packing density generally enhances crack formation in conventional oxide glasses, the indentation cracking resistance increased by approximately seven times with an increase in atomic packing density in binary Al2O3–SiO2 glasses. In particular, the composition of 60Al2O3•40SiO2 glass, which is identical to that of mullite, has extraordinary high cracking resistance with high elastic moduli and Vickers hardness. The results indicate that there exist aluminosilicate compositions that can produce hard and damage-tolerant glasses. PMID:27053006

  2. Distinctive electrical properties in sandwich-structured Al2O3/low density polyethylene nanocomposites

    NASA Astrophysics Data System (ADS)

    Wang, Si-Jiao; Zha, Jun-Wei; Li, Wei-Kang; Dang, Zhi-Min

    2016-02-01

    The sandwich-structured Al2O3/low density polyethylene (Al2O3/LDPE) nanocomposite dielectrics consisting of layer-by-layer with different concentration Al2O3 loading were prepared by melt-blending and following hot pressing method. The space charge distribution from pulsed electro-acoustic method and breakdown strength of the nanocomposites were investigated. Compared with the single-layer Al2O3/LDPE nanocomposites, the sandwich-structured nanocomposites remarkably suppressed the space charge accumulation and presented higher breakdown strength. The charges in the sandwich-structured nanocomposites decayed much faster than that in the single-layer nanocomposites, which was attributed to an effective electric field caused by the formation of the interfacial space charges. The energy depth of shallow and deep traps was estimated as 0.73 eV and 1.17 eV in the sandwich-structured nanocomposites, respectively, according to the thermal excitation theoretical model we proposed. This work provides an attractive strategy of design and fabrication of polymer nanocomposites with excellent space charge suppression.

  3. Electrochemical Impedance Studies on Tribocorrosion Behavior of Plasma-Sprayed Al2O3 Coatings

    NASA Astrophysics Data System (ADS)

    Liu, Zhe; Chu, Zhenhua; Chen, Xueguang; Dong, Yanchun; Yang, Yong; Li, Yingzhen; Yan, Dianran

    2015-06-01

    In this paper, the tribocorrosion of plasma-sprayed Al2O3 coatings in simulated seawater was investigated by electrochemical impedance spectroscopy (EIS) technique, complemented by scanning electron microscopy to observe the morphology of the tribocorrosion attack. Base on EIS of plasma-sprayed Al2O3 coatings undergoing long-time immersion in simulated seawater, the corrosion process of Al2O3 coatings can be divided into the earlier stage of immersion (up to 20 h) and the later stage (beyond 20 h). Then, the wear tests were carried out on the surface of Al2O3 coating undergoing different times of immersion to investigate the influence of wear on corrosion at different stages. The coexistence of wear and corrosion condition had been created by a boron nitride grinding head rotating on the surface of coatings corroded in simulated seawater. The measured EIS and the values of the fitting circuit elements showed that wear accelerated corrosion at the later stage, meanwhile, corrosion accelerated wear with the immersion time increasing.

  4. Transport mechanisms of leakage current in Al2O3/InAlAs MOS capacitors

    NASA Astrophysics Data System (ADS)

    Jin, Chengji; Lu, Hongliang; Zhang, Yimen; Zhang, Yuming; Guan, He; Wu, Lifan; Lu, Bin; Liu, Chen

    2016-09-01

    An Al2O3 layer is inserted between the InAlAs layer and the metal gate in InAs/AlSb HEMTs to suppress the leakage current. The transport mechanisms of leakage current in Al2O3/InAlAs metal-oxide-semiconductor (MOS) capacitors at both positive and negative biases at different temperatures ranging from 10 °C to 70 °C are investigated. For positive bias, the leakage current is dominated by Schottky emission. Based on the fitted straight lines, the relative dielectric constant of Al2O3 and the barrier height between Al2O3 and InAlAs are extracted. However, for negative bias, the leakage current is dominated by Frenkel-Poole (F-P) emission and the depth of the trap energy level from the conduction band (ϕt) is extracted. Furthermore, authors explain the reason why the dominating mechanisms at positive and negative biases are different.

  5. Plasma etching behavior of Y2O3 ceramics: Comparative study with Al2O3

    NASA Astrophysics Data System (ADS)

    Cao, Yu-Chao; Zhao, Lei; Luo, Jin; Wang, Ke; Zhang, Bo-Ping; Yokota, Hiroki; Ito, Yoshiyasu; Li, Jing-Feng

    2016-03-01

    The plasma etching behavior of Y2O3 coating was investigated and compared with that of Al2O3 coating under various conditions, including chemical etching, mixing etching and physical etching. The etching rate of Al2O3 coating declined with decreasing CF4 content under mixing etching, while that of Y2O3 coating first increased and then decreased. In addition, the Y2O3 coating demonstrated higher erosion-resistance than Al2O3 coating after exposing to fluorocarbon plasma. X-ray photoelectron spectroscopy (XPS) analysis confirmed the formations of YF3 and AlF3 on the Y2O3 and Al2O3 coatings, respectively, which acted as the protective layer to prevent the surface from further erosion with fluorocarbon plasma. It was revealed that the etching behavior of Y2O3 depended not only on the surface fluorination but also on the removal of fluoride layer. To analyze the effect of porosity, Y2O3 bulk samples with high density were prepared by spark plasma sintering, and they demonstrated higher erosion-resistances compared with Y2O3 coating.

  6. Hydrothermal extraction and gasification of low rank coal with catalyst Al2O3 and Pd/Al2O3

    NASA Astrophysics Data System (ADS)

    Fachruzzaki, Handayani, Ismi; Mursito, Anggoro Tri

    2017-01-01

    Increasing coal quality is very important in order to utilize low-rank coal. This research is attempted to increase the quality of low-rank coal using hydrothermal process with hot compressed water (HCW) at 200 °C and 3 MPa. The product from this process were solid residue and liquid filtrate with organic component. Product from gasification of the filtrate was synthetic gas. The result showed that higher water flow rate could increase organic component in the filtrate. When a catalyst was used, the extraction process was faster, the organic component in the filtrate was increased while its content was decreased in the residue. Fourier transform infrared spectroscopy (FTIR) analysis indicated that coal extraction using HCW was more effective with catalyst Pd/Al2O3. Increasing the process temperature will increase the amounts CO and H2 gas. In this research, highest net heating value at 800°C using K2CO3 solution and Pd/Al2O3 catalyst was 17,774.36 kJ/kg. The highest cold gas efficiency was 91.29% and the best carbon conversion was 34.78%.

  7. MgO-Al2O3-ZrO2 Amorphous Ternary Composite: A Dense and Stable Optical Coating

    NASA Technical Reports Server (NTRS)

    Shaoo, Naba K.; Shapiro, Alan P.

    1998-01-01

    The process-parameter-dependent optical and structural properties of MgO-Al2O3-ZrO2 ternary mixed-composite material were investigated. Optical properties were derived from spectrophotometric measurements. The surface morphology, grain size distributions, crystallographic phases, and process- dependent material composition of films were investigated through the use of atomic force microscopy, x-ray diffraction analysis, and energy-dispersive x-ray analysis. Energy-dispersive x-ray analysis made evident the correlation between the optical constants and the process-dependent compositions in the films. It is possible to achieve environmentally stable amorphous films with high packing density under certain optimized process conditions.

  8. Pyridine adsorption on NiSn/MgO-Al2O3: An FTIR spectroscopic study of surface acidity

    NASA Astrophysics Data System (ADS)

    Penkova, Anna; Bobadilla, Luis F.; Romero-Sarria, Francisca; Centeno, Miguel A.; Odriozola, José A.

    2014-10-01

    The acid-base properties of MgO-Al2O3 supports and NiSn/MgO-Al2O3 catalysts were evaluated by IR spectroscopy using pyridine as a probe molecule. The results indicate that only Lewis acid sites were detected on the surface of the supports as well as on the catalysts. Nevertheless, Brønsted acid sites were not detected. In the support without MgO three kinds of coordinatively unsaturated acid sites were detected: Al3+ cations occupying octahedral, tetrahedral and tetrahedral with cationic vacancy in the neighbourhood. The last sites appear as the strongest. Moreover, they are able to activate the pyridine molecules leading to the formation of an intermediate α-pyridone complex. When MgO or NiO were added to the alumina, the number and strength of the Lewis acid sites decreased and significant changes were observed in the tetrahedral sites with adjoining cation vacancies. The incorporation of the Mg2+ cations into the alumina's structure takes place on the vacant tetrahedral positions, forming spinel MgAl2O4. As a result, the fraction of tetrahedral sites with adjoining cationic vacancy diminished and the intermediate α-pyridone complex in the support with the highest MgO loading was hardly detected. The addition of Ni2+ cations leads to the filling of the free octahedral positions, resulting in the formation of a NiAl2O4 spinel structure and the thermal stability of the α-pyridone species decreases. In the catalysts, the progressive reduction of the number and strength of the Lewis acid sites is due to a competitive formation of the two types of MgAl2O4 and NiAl2O4 spinels. In the catalyst NiSn/30MgO-Al2O3 no cationic vacancies were detected and the surface reaction with α-pyridone formation did not occur.

  9. Structural optical correlated properties of SnO2/Al2O3 core@ shell heterostructure

    NASA Astrophysics Data System (ADS)

    Heiba, Zein K.; Imam, N. G.; Bakr Mohamed, Mohamed

    2016-07-01

    Nano size polycrystalline samples of the core@shell heterostructure of SnO2 @ xAl2O3 (x = 0, 25, 50, 75 wt.%) were synthesized by sol-gel technique. The resulting samples were characterized with fourier transform infrared spectroscopy (FT-IR), photoluminescence (PL) and X-ray powder diffraction (XRD). The XRD patterns manifest diffraction peaks of SnO2 as main phase with weak peaks corresponding to Al2O3 phase. The formation of core@ shell structure is confirmed by TEM images and Rietveld quantitative phase analysis which revealed that small part of Al2O3 is incorporated into the SnO2 lattice while the main part (shell) remains as a separate phase segregated on the grain boundary surface of SnO2 (core). It is found that the grain size of the mixed oxides SnO2 @ xAl2O3 is below 10 nm while for pure SnO2 it is over 41 nm, indicating that alumina can effectively prevent SnO2 from further growing up in the process of calcination. This is confirmed by the large increase in the specific surface area for mixed oxide samples. The PL emission showed great dependence on the structure properties analyzed by XRD and FTIR. The PL results recommend Al2O3@SnO2 core@shell heterostructure to be a promising short-wavelength luminescent optoelectronic devices for blue, UV, and laser light-emitting diodes.

  10. Synthesis of Y1-xAlxBa2Cu3O7-δ via combustion route: Effects of Al2O3 nanoparticles on superconducting properties

    NASA Astrophysics Data System (ADS)

    Mohd Suan, Mohd Shahadan; Johan, Mohd Rafie

    2017-02-01

    Combustion reaction was used to synthesis Al2O3 nanoparticles embedded Y1-xAlxBa2Cu3O7-δ simultaneously. The effects of Al2O3 nanoparticles with nominal molar mass (xmol) of 0.02, 0.04, 0.06, 0.08 and 0.10 towards the critical current density JC of Y1-xAlxBa2Cu3O7-δ were verified by magnetic measurement. Resulted XRD patterns revealed that the calcined samples consist of pure Al2O3 and Y1-xAlxBa2Cu3O7-δ phases which had been confirmed by EDX results. The SEM images showed that Al2O3 nanoparticles ( 10 nm) were distributed in polycrystalline YBa2Cu3O7-δ grains and grain boundaries. The presence of higher concentration of Al2O3 nanoparticles has developed Al3+ rich spots which diffused within the YBa2Cu3O7-δ superconducting matrix to form Y1-xAlxBa2Cu3O7-δ and was confirmed by EDX analysis. The samples were electrically superconducting at temperature above 85 K as measured by using standard four-probe technique. The magnetic field (H) dependent magnetization (M), M-H hysteresis loops measured at 77 K for xmol≤0.06 samples are significantly improved attributed to the increase of trapped fluxes in the samples. Remarkable increase of magnetic JC (H) in Al2O3 nanoparticles added samples compared to the as prepared polycrystalline YBa2Cu3O7-δ sample indicating strong pinning effect. It is suggested that well-distributed Al2O3 nanoparticles in the polycrystalline YBa2Cu3O7-δ matrix achieved via auto-combustion reaction has efficiently pin the magnetic vortex. The magnetic JC was optimized to 6 kAcm-2 in xmol=0.06 sample. On the other hand, insignificant magnetic JC improvement in xmol≥0.08 samples is probably resulted from the agglomerated Al2O3 nanoparticles in Y1-xAlxBa2Cu3O7-δ phase.

  11. Thermal conductivity of amorphous Al2O3/TiO2 nanolaminates deposited by atomic layer deposition

    NASA Astrophysics Data System (ADS)

    Ali, Saima; Juntunen, Taneli; Sintonen, Sakari; Ylivaara, Oili M. E.; Puurunen, Riikka L.; Lipsanen, Harri; Tittonen, Ilkka; Hannula, Simo-Pekka

    2016-11-01

    The thermophysical properties of Al2O3/TiO2 nanolaminates deposited by atomic layer deposition (ALD) are studied as a function of bilayer thickness and relative TiO2 content (0%-100%) while the total nominal thickness of the nanolaminates was kept at 100 nm. Cross-plane thermal conductivity of the nanolaminates is measured at room temperature using the nanosecond transient thermoreflectance method. Based on the measurements, the nanolaminates have reduced thermal conductivity as compared to the pure amorphous thin films, suggesting that interfaces have a non-negligible effect on thermal transport in amorphous nanolaminates. For a fixed number of interfaces, we find that approximately equal material content of Al2O3 and TiO2 produces the lowest value of thermal conductivity. The thermal conductivity reduces with increasing interface density up to 0.4 nm-1, above which the thermal conductivity is found to be constant. The value of thermal interface resistance approximated by the use of diffuse mismatch model was found to be 0.45 m2 K GW-1, and a comparative study employing this value supports the interpretation of non-negligible interface resistance affecting the overall thermal conductivity also in the amorphous limit. Finally, no clear trend in thermal conductivity values was found for nanolaminates grown at different deposition temperatures, suggesting that the temperature in the ALD process has a non-trivial while modest effect on the overall thermal conductivity in amorphous nanolaminates.

  12. Fabrication of Al2O3/TiO2 multilayer mirrors for water-window attosecond pulses

    NASA Astrophysics Data System (ADS)

    Tanaka, Yuji; Murata, Masaki; Kumagai, Hiroshi; Kobayashi, Ataru; Shinagawa, Tsutomu

    2010-02-01

    Novel metal-oxide multilayer mirrors for water-window wavelengths have been already studied and then fabricated by atomic layer deposition (ALD) or atomic layer epitaxy (ALE) methods which have the self-limiting nature of the surface reactions and can control thickness on an atomic scale over large areas. The reason why metal-oxide multilayer mirrors are effective in the water-window wavelength is that they can prevent the formation of various alloys at the interface resulting in scattering loss, and the absorption of oxygen in oxides is negligible at the wavelength. In this study, high and low refractive materials were chosen to be TiO2 and Al2O3 respectively, because they can be fabricated by ALD or ALE methods and Ti L-absorption edge is located at 2.73nm. We investigated the atomic-scale growth of these films and then found that the growth rates could be constant. Moreover, Al2O3/TiO2 multilayer mirrors were fabricated by the ALE method. As a result, the soft x-ray reflectivity of the 10-bilayer mirror was 1.54%, approximately.

  13. Thermal conductivity of amorphous Al2O3/TiO2 nanolaminates deposited by atomic layer deposition.

    PubMed

    Ali, Saima; Juntunen, Taneli; Sintonen, Sakari; Ylivaara, Oili M E; Puurunen, Riikka L; Lipsanen, Harri; Tittonen, Ilkka; Hannula, Simo-Pekka

    2016-11-04

    The thermophysical properties of Al2O3/TiO2 nanolaminates deposited by atomic layer deposition (ALD) are studied as a function of bilayer thickness and relative TiO2 content (0%-100%) while the total nominal thickness of the nanolaminates was kept at 100 nm. Cross-plane thermal conductivity of the nanolaminates is measured at room temperature using the nanosecond transient thermoreflectance method. Based on the measurements, the nanolaminates have reduced thermal conductivity as compared to the pure amorphous thin films, suggesting that interfaces have a non-negligible effect on thermal transport in amorphous nanolaminates. For a fixed number of interfaces, we find that approximately equal material content of Al2O3 and TiO2 produces the lowest value of thermal conductivity. The thermal conductivity reduces with increasing interface density up to 0.4 nm(-1), above which the thermal conductivity is found to be constant. The value of thermal interface resistance approximated by the use of diffuse mismatch model was found to be 0.45 m(2) K GW(-1), and a comparative study employing this value supports the interpretation of non-negligible interface resistance affecting the overall thermal conductivity also in the amorphous limit. Finally, no clear trend in thermal conductivity values was found for nanolaminates grown at different deposition temperatures, suggesting that the temperature in the ALD process has a non-trivial while modest effect on the overall thermal conductivity in amorphous nanolaminates.

  14. Characterization of ZrO2 buffer layers for sequentially evaporated Y-Ba-CuO on Si and Al2O3 substrates

    NASA Technical Reports Server (NTRS)

    Valco, George J.; Rohrer, Norman J.; Pouch, John J.; Warner, Joseph D.; Bhasin, Kul B.

    1988-01-01

    Thin film high temperature superconductors have the potential to change the microwave technology for space communications systems. For such applications it is desirable that the films be formed on substrates such as Al2O3 which have good microwave properties. The use of ZrO2 buffer layers between Y-Ba-Cu-O and the substrate has been investigated. These superconducting films have been formed by multilayer sequential electron beam evaporation of Cu, BaF2 and Y with subsequent annealing. The three layer sequence of Y/BaF2/Cu is repeated four times for a total of twelve layers. Such a multilayer film, approximately 1 micron thick, deposited directly on SrTiO3 and annealed at 900 C for 45 min produces a film with a superconducting onset of 93 K and critical temperature of 85 K. Auger electron spectroscopy in conjunction with argon ion sputtering was used to obtain the distribution of each element as a function of depth for an unannealed film, the annealed film on SrTiO3 and annealed films on ZrO2 buffer layers. The individual layers were apparent. After annealing, the bulk of the film on SrTiO3 is observed to be fairly uniform while films on the substrates with buffer layers are less uniform. The Y-Ba-Cu-O/ZrO2 interface is broad with a long Ba tail into the ZrO2, suggesting interaction between the film and the buffer layer. The underlying ZrO2/Si interface is sharper. The detailed Auger results are presented and compared with samples annealed at different temperatures and durations.

  15. The effect of Mg location on Co-Mg-Ru/γ-Al2O3 Fischer–Tropsch catalysts

    PubMed Central

    Combes, Gary B.; Ozkaya, Don; Enache, Dan I.; Ellis, Peter R.; Kelly, Gordon; Rosseinsky, Matthew J.

    2016-01-01

    The effectiveness of Mg as a promoter of Co-Ru/γ-Al2O3 Fischer–Tropsch catalysts depends on how and when the Mg is added. When the Mg is impregnated into the support before the Co and Ru addition, some Mg is incorporated into the support in the form of MgxAl2O3+x if the material is calcined at 550°C or 800°C after the impregnation, while the remainder is present as amorphous MgO/MgCO3 phases. After subsequent Co-Ru impregnation MgxCo3−xO4 is formed which decomposes on reduction, leading to Co(0) particles intimately mixed with Mg, as shown by high-resolution transmission electron microscopy. The process of impregnating Co into an Mg-modified support results in dissolution of the amorphous Mg, and it is this Mg which is then incorporated into MgxCo3−xO4. Acid washing or higher temperature calcination after Mg impregnation can remove most of this amorphous Mg, resulting in lower values of x in MgxCo3−xO4. Catalytic testing of these materials reveals that Mg incorporation into the Co oxide phase is severely detrimental to the site-time yield, while Mg incorporation into the support may provide some enhancement of activity at high temperature. PMID:26755760

  16. Room-Temperature Atomic Layer Deposition of Al2 O3 : Impact on Efficiency, Stability and Surface Properties in Perovskite Solar Cells.

    PubMed

    Kot, Malgorzata; Das, Chittaranjan; Wang, Zhiping; Henkel, Karsten; Rouissi, Zied; Wojciechowski, Konrad; Snaith, Henry J; Schmeisser, Dieter

    2016-12-20

    In this work, solar cells with a freshly made CH3 NH3 PbI3 perovskite film showed a power conversion efficiency (PCE) of 15.4 % whereas the one with 50 days aged perovskite film only 6.1 %. However, when the aged perovskite was covered with a layer of Al2 O3 deposited by atomic layer deposition (ALD) at room temperature (RT), the PCE value was clearly enhanced. X-ray photoelectron spectroscopy study showed that the ALD precursors are chemically active only at the perovskite surface and passivate it. Moreover, the RT-ALD-Al2 O3 -covered perovskite films showed enhanced ambient air stability.

  17. Electrical Discharge Machining of Al/7.5% Al2O3 MMCs Using Rotary Tool and Al2O3 Powder

    NASA Astrophysics Data System (ADS)

    Daneshmand, Saeed; Masoudi, Behnam; Monfared, Vahid

    Nowadays, composites are used in different parts of industries and it is one of the most important subjects. The most widely used reinforcements in metal matrix composites are Al2O3 and SiC fibers and particles which may be used in cutting-edge functional and structural applications of aerospace, defense, and automobile industries. Depending on the type of powder used, composite materials are difficult to machine by conventional cutting tools and methods. The most appropriate way for machining of these composites is electro discharge. For the reason of improving the surface quality, tool wear rate and material removal rate and reducing the cracks on the surface, Al2O3 powder was used. In this study, the effect of input parameters of EDM such as voltage, pulse current, pulse on-time and pulse off-time on output parameters like material removal rate, tool wear rate and surface roughness in both conditions of the rotary tool with powder mixed dielectric EDM and the stationary tool excluding powder mixed dielectric were investigated. The critical parameters were identified by variance analysis, while the optimum machining parameter settings were achieved via Taguchi method. Results show that using of powder mixed dielectric and rotary tool reduce the tool wear rate, surface roughness and the cracks on the surface significantly. It is found also that using of powder mixed dielectric and rotary tool improve the material removal rate due to improved flushing action and sparking efficiency. The analysis of variance showed that the pulse current and pulse on-time affected highly the MRR, TWR, surface roughness and surface cracks.

  18. Reaction mechanism for in-situ β-SiAlON formation in Fe3Si-Si3N4-Al2O3 composites

    NASA Astrophysics Data System (ADS)

    Qin, Hai-xia; Li, Yong; Bai, Li-xiong; Long, Meng-long; Xue, Wen-dong; Chen, Jun-hong

    2017-03-01

    In this work, Fe3Si-Si3N4-Al2O3 composites were prepared at 1300°C in an N2 atmosphere using fused corundum and tabular alumina particles, Al2O3 fine powder, and ferrosilicon nitride (Fe3Si-Si3N4) as raw materials and thermosetting phenolic resin as a binder. The effect of ferrosilicon nitride with different concentrations (0wt%, 5wt%, 10wt%, 15wt%, 20wt%, and 25wt%) on the properties of Fe3Si-Si3N4-Al2O3 composites was investigated. The results show that the apparent porosity varies between 10.3% and 17.3%, the bulk density varies from 2.94 g/cm3 and 3.30 g/cm3, and the cold crushing strength ranges from 67 MPa to 93 MPa. Under the experimental conditions, ferrosilicon nitride, whose content decreases substantially, is unstable; part of the ferrosilicon nitride is converted into Fe2C, whereas the remainder is retained, eventually forming the ferrosilicon alloy. Thermodynamic assessment of the Si5AlON7 indicated that the ferrosilicon alloy accelerated the reactions between Si3N4 and α-Al2O3 fine powder and that Si in the ferrosilicon alloy was nitrided directly, forming β-SiAlON simultaneously. In addition, fused corundum did not react directly with Si3N4 because of its low reactivity.

  19. Effect of Nano-Al2O3 on the Toxicity and Oxidative Stress of Copper towards Scenedesmus obliquus

    PubMed Central

    Li, Xiaomin; Zhou, Suyang; Fan, Wenhong

    2016-01-01

    Nano-Al2O3 has been widely used in various industries; unfortunately, it can be released into the aquatic environment. Although nano-Al2O3 is believed to be of low toxicity, it can interact with other pollutants in water, such as heavy metals. However, the interactions between nano-Al2O3 and heavy metals as well as the effect of nano-Al2O3 on the toxicity of the metals have been rarely investigated. The current study investigated copper toxicity in the presence of nano-Al2O3 towards Scenedesmus obliquus. Superoxide dismutase activity and concentration of glutathione and malondialdehyde in cells were determined in order to quantify oxidative stress in this study. Results showed that the presence of nano-Al2O3 reduced the toxicity of Cu towards S. obliquus. The existence of nano-Al2O3 decreased the growth inhibition of S. obliquus. The accumulation of copper and the level of oxidative stress in algae were reduced in the presence of nano-Al2O3. Furthermore, lower copper accumulation was the main factor that mitigated copper toxicity with the addition of nano-Al2O3. The decreased copper uptake could be attributed to the adsorption of copper onto nanoparticles and the subsequent decrease of available copper in water. PMID:27294942

  20. Effect of catalyst preparation conditions on the hydrodesulfurization of thiophene over Co-Mo/gamma-Al2O3.

    PubMed

    Chen, Chun-Liang; Lin, Shiow-Shyung; Liu, Tuan-Chi

    2002-01-01

    The purpose of this research was to study the effects of preparation conditions on the catalytic properties of the Co-Mo/gamma-Al2O3 catalyst. The work included catalyst preparations and reactions. In the preparations, cobalt-impregnated Mo/gamma-Al2O3 (designated as IcIM) was found to have a promoting effect on the hydrodesulfurization (HDS) of thiophene. Activity and stability of IcIM was higher than that of Mo/gamma-Al2O3. Conversely, when cobalt was added onto Mo/gamma-Al2O3 by the mechanical mixing method, no promoting effect was observed. Mo/gamma-Al2O3 was also prepared using the two different methods (incipient impregnation or mechanical mixing). The differently prepared Mo/gamma-Al203 resulted in no obvious difference in activity of IcIM. It was further found that Co-Mo/gamma-Al2O3 activity initially increased appreciably with Mo content and leveled off at Mo contents above 9 wt.%. The catalyst exhibited a maximum activity at Co/Mo ratio 0.3. The order in which metal species were added had a great influence on the activity of the Co-Mo/gamma-Al2O3 catalyst. Higher activity was obtained when Co was added into Mo/gamma-Al2O3 as opposed to Mo added into Co/gamma-Al2O3.

  1. ALD TiO2-Al2O3 Stack: An Improved Gate Dielectrics on Ga-polar GaN MOSCAPs

    DOE PAGES

    Wei, Daming; Edgar, James H.; Briggs, Dayrl P.; ...

    2014-10-15

    This research focuses on the benefits and properties of TiO2-Al2O3 nano-stack thin films deposited on Ga2O3/GaN by plasma-assisted atomic layer deposition (PA-ALD) for gate dielectric development. This combination of materials achieved a high dielectric constant, a low leakage current, and a low interface trap density. Correlations were sought between the films’ structure, composition, and electrical properties. The gate dielectrics were approximately 15 nm thick and contained 5.1 nm TiO2, 7.1 nm Al2O3 and 2 nm Ga2O3 as determined by spectroscopic ellipsometry. The interface carbon concentration, as measured by x-ray photoelectron spectroscopy (XPS) depth profile, was negligible for GaN pretreated bymore » thermal oxidation in O2 for 30 minutes at 850°C. The RMS roughness slightly increased after thermal oxidation and remained the same after ALD of the nano-stack, as determined by atomic force microscopy. The dielectric constant of TiO2-Al2O3 on Ga2O3/GaN was increased to 12.5 compared to that of pure Al2O3 (8~9) on GaN. In addition, the nano-stack's capacitance-voltage (C-V) hysteresis was small, with a total trap density of 8.74 × 1011 cm-2. The gate leakage current density (J=2.81× 10-8 A/cm2) was low at +1 V gate bias. These results demonstrate the promising potential of plasma ALD deposited TiO2/Al2O3 for serving as the gate oxide on Ga2O3/GaN based MOS devices.« less

  2. Eliminated Phototoxicity of TiO2 Particles by an Atomic-Layer-Deposited Al2 O3 Coating Layer for UV-Protection Applications.

    PubMed

    Jang, Eunyong; Sridharan, Kishore; Park, Young Min; Park, Tae Joo

    2016-08-16

    We demonstrate the conformal coating of an ultrathin Al2 O3 layer on TiO2 nanoparticles through atomic layer deposition by using a specifically designed rotary reactor to eliminate the phototoxicity of the particles for cosmetic use. The ALD reactor is modified to improve the coating efficiency as well as the agitation of the particles for conformal coating. Elemental and microstructural analyses show that ultrathin Al2 O3 layers are conformally deposited on the TiO2 nanoparticles with a controlled thickness. Rhodamine B dye molecules on Al2 O3 -coated TiO2 exhibited a long life time under UV irradiation, that is, more than 2 h, compared to that on bare TiO2 , that is, 8 min, indicating mitigation of photocatalytic activity by the coated layer. The effect of carbon impurities in the film resulting from various deposition temperatures and thicknesses of the Al2 O3 layer on the photocatalytic activity are also thoroughly investigated with controlled experimental condition by using dye molecules on the surface. Our results reveal that an increased carbon impurity resulting from a low processing temperature provides a charge conduction path and generates reactive oxygen species causing the degradation of dye molecule. A thin coated layer, that is, less than 3 nm, also induced the tunneling of electrons and holes to the surface, hence oxidizing dye molecules. Furthermore, the introduction of an Al2 O3 layer on TiO2 improves the light trapping thus, enhances the UV absorption.

  3. Effect Of Preparation Methods On The Performance Of Co/Al2O3 Catalysts For Dry Reforming Of Methane

    SciTech Connect

    Ewbank, Jessica L.; Kovarik, Libor; Kenvin, Christian C.; Sievers, Carsten

    2014-01-06

    Two methods, dry impregnation (DI) and controlled adsorption (CA), are used for the preparation of Co/ Al2O3 catalysts for methane dry reforming reactions. Point of zero charge (PZC) measurements, pH-precipitation studies, and adsorption isotherms are used to develop a synthesis procedure in which deposition of Co2+ takes place in a more controlled manner than metal deposition during drying in synthesis by dry impregnation. The possible adsorption phenomena that occur during preparation of Co/Al2O3 catalysts by controlled adsorption are discussed. H2 chemisorption and TEM show that catalysts prepared by CA have smaller average particle sizes and higher dispersions. TPR studies show that for the sample prepared by CA a higher amount of cobalt is reduced to its metallic state and that more CoAl2O4 spinel species are present relative to DI samples. The catalyst prepared by CA shows higher activity and slower deactivation for methane dry reforming than the catalyst prepared by DI. XPS and C, H, N analysis on spent catalysts confirm two types of carbonaceous deposits are formed depending on the preparation method.

  4. Al2O3/SUS304 Brazing via AgCuTi-W Composite as Active Filler

    NASA Astrophysics Data System (ADS)

    Su, Cherng-Yuh; Zhuang, Xie-Zongyang; Pan, Cheng-Tang

    2014-03-01

    Alumina ceramic (α-Al2O3) was brazed to stainless steel (SUS304) using an Ag-Cu-Ti + W composite filler and a traditional active brazing filler alloy (CuSil-ABA). Then, the effects of the presence of W particles and of the brazing parameters on the microstructures and mechanical properties of the brazed joints were investigated. The maximum tensile strength of the joints obtained using Ag-Cu-Ti + W composite filler was 13.2 MPa, which is similar to that obtained using CuSil-ABA filler (13.5 MPa). When the joint was brazed at 930 °C for 30 min, the tensile strengths decreased for both kinds of fillers, although the strength was slightly higher for the Ag-Cu-Ti + W composite filler than for the Ag-Cu-Ti filler. The interfacial microstructure results show that the Ti reacts with W to form a Ti-W-O compound in the brazing alloy. When there are more W particles in the brazing alloy, the thickness of the Ti X O Y reaction layer near the alumina ceramic decreases. Moreover, W particles added to the brazing alloy can reduce the coefficient of thermal expansion of the brazing alloy, which results in lower residual stress between the Al2O3 and SUS304 in the brazing joints and thus yields higher tensile strengths as compared to those obtained using the CuSil-ABA brazing alloy.

  5. Atmospheric plasma sprayed (APS) coatings of Al2O3-TiO2 system for photocatalytic application.

    PubMed

    Stengl, V; Ageorges, H; Ctibor, P; Murafa, N

    2009-05-01

    The goal of this study is to examine the photocatalytic ability of coatings produced by atmospheric plasma spraying (APS). The plasma gun used is a common gas-stabilized plasma gun (GSP) working with a d.c. current and a mixture of argon and hydrogen as plasma-forming gas. The TiO(2) powders are particles of about 100 nm which were agglomerated to a mean size of about 55 mum, suitable for spraying. Composition of the commercial powder is 13 wt% of TiO(2) in Al(2)O(3), whereas also in-house prepared powder with the same nominal composition but with agglomerated TiO(2) and conventional fused and crushed Al(2)O(3) was sprayed. The feedstock materials used for this purpose are alpha-alumina and anatase titanium dioxide. The coatings are analyzed by scanning electron microscopy (SEM), energy dispersion probe (EDS) and X-ray diffraction. Photocatalytic degradation of acetone is quantified for various coatings. All plasma sprayed coatings show a lamellar structure on cross section, as typical for this process. Anatase titania from feedstock powder is converted into rutile titania and alpha-alumina partly to gamma-alumina. Coatings are proven to catalyse the acetone decomposition when irradiated by UV rays.

  6. Diffusion processes in Al2O3 scales - Void growth, grain growth, and scale growth

    NASA Technical Reports Server (NTRS)

    Smialek, J. L.; Gibala, R.

    1983-01-01

    The internal microstructure and growth kinetics of Al2O3 scales on Ni-15Cr-13Al (wt percent) are investigated by TEM and analyzed in relation to models of diffusivity. Polished arc-melted specimens were oxidized in 1-atm air at 1100 C for 0.1, 1.0, and 20 hours and ion-thinned for TEM at 100 kV. The frequency distribution of void size and grain size is determined for different oxidation times and scale depths. The kinetics of microvoid growth and of grain and scale growth are plotted and related via simplified models to lattice and grain-boundary oxygen diffusivity, respectively. Good agreement is found between model predictions and data obtained by Oishi and Kingery (1960) on oxygen diffusion in bulk Al2O3. The further implications and limitations of these findings are discssed.

  7. Adherent Al2O3 scales produced on undoped NiCrAl alloys

    NASA Technical Reports Server (NTRS)

    Smialek, James L.

    1986-01-01

    Repeated oxidation and polishing of high purity Ni-15Cr-13Al has dramatically changed its cyclic oxidation behavior from nonadherent to adherent. No apparent change in scale phase, morphology or interface structure occurred during this transition, dismissing any mechanism based on pegging, vacancy sink, or growth stress. The principle change that did occur was a reduction in the sulfur content from 10 ppmw to 3 ppmw after 25 cycles at 1120 C. These observations are used to support the model of Al2O3 scale adherence put forth by Smeggil et al. which claims that Al2O3 scale spallation occurs due to sulfur segregation and bond deterioration at the oxide-metal interface.

  8. Fabrication of SiC/Al2O3 CMCs & their physical properties

    NASA Astrophysics Data System (ADS)

    Kumar, S. Santhosh; Devaiah, M.; Rajasekharan, T.

    2012-06-01

    SiC particulate reinforced Al2O3 matrix composites were fabricated using Directed Metal Oxidation (DIMOX) process. Continuous oxidation of an Al-8.5Si-1.5Mg-9Zn alloy in presence SiC perform with suitable dopants has led to the formation of the Al2O3 matrix. Ceramic composites with SiC volume fraction in the range of 0.35 - 0.43 were evaluated for effective co-efficient of linear thermal expansion (CTE) and elastic properties. The composites with high volume fraction of SiC showed a minimum dilatation with temperature (5.0 × 10-6 /K) and also enhancement in elastic properties (E: 262 GPa; G: 87 GPa; K: 189 GPa). Also, the elastic properties of the ceramic composites increased with SiC volume fraction.

  9. Interdiffusion in the MgO-Al2O3 spinel with or without some dopants

    NASA Astrophysics Data System (ADS)

    Zhang, P.; Debroy, T.; Seetharaman, S.

    1996-08-01

    With a view to seek an improved understanding of the DIMOX process, interdiffusion of polycrystalline MgO and Al2O3 in the temperature range 1473 to 1873 K was studied by diffusion couple experiments. The interdiffusivities in the spinel layer were calculated as functions of composition and temperature. The spinel portion of the phase diagram in the system MgO-Al2O3 was determined from carefully measured compositions at the phase boundaries, and the low temperature spinel region of the phase diagram was confirmed from the present results. For Zn2+ as dopant in alumina, the growth rate of spinel thickness seems to increase when compared with that of the diffusion couples without dopant. The samples containing Si4+ as dopant reveal the formation of a glass phase, and the effect of Si4+ on the diffusion process appears to be negligible.

  10. Mechanical properties of Al2O3 inverse opals by means of nanoindentation

    NASA Astrophysics Data System (ADS)

    Roa, J. J.; Coll, A.; Bermejo, S.; Jiménez-Piqué, E.; Alcubilla, R.; Castañer, L.; Llanes, L.

    2016-11-01

    In order to understand the mechanical behaviour of Al2O3 inverse opals, nanoindentation techniques have been implemented in material layers with three different microstructures, in terms of hollow or polystyrene spheres, with Al2O3 shells of distinct wall thickness. Different indenter tip geometries as well as contact loading conditions have been used, in order to induce different stress field and fracture events to the layers. Field emission scanning electron microscopy and focused ion beam have been employed to understand accommodation of plastic deformation induced during the indentation process. Results show that materials with polystyrene spheres exhibit higher hardness and modulus under sharp indentation, and cracking resistance under spherical indentation. Furthermore, deformation is discerned to be mainly governed by the rotation of the microspheres. In the case of the inverse opals made of hollow spheres, the main deformation mechanisms activated under indentation are the rearrangement and densification of them.

  11. Geant4 calculations for space radiation shielding material Al2O3

    NASA Astrophysics Data System (ADS)

    Capali, Veli; Acar Yesil, Tolga; Kaya, Gokhan; Kaplan, Abdullah; Yavuz, Mustafa; Tilki, Tahir

    2015-07-01

    Aluminium Oxide, Al2O3 is the most widely used material in the engineering applications. It is significant aluminium metal, because of its hardness and as a refractory material owing to its high melting point. This material has several engineering applications in diverse fields such as, ballistic armour systems, wear components, electrical and electronic substrates, automotive parts, components for electric industry and aero-engine. As well, it is used as a dosimeter for radiation protection and therapy applications for its optically stimulated luminescence properties. In this study, stopping powers and penetrating distances have been calculated for the alpha, proton, electron and gamma particles in space radiation shielding material Al2O3 for incident energies 1 keV - 1 GeV using GEANT4 calculation code.

  12. High brightness, narrow-band, Ti:Al2O3 oscillator

    NASA Astrophysics Data System (ADS)

    Brown, A. J. W.; Kangas, K. W.; Fisher, C. H.

    The injection-seeding of a short (about 30 cm) Ti:Al2O3 power oscillator with the output from a short-pulse, narrow-band, tunable, Ti:Al2O3 oscillator is reported. The frequency-doubled output from a Continuum YG681C Nd:YAG laser was used as the common pump source for both the seed laser and power oscillator. Good injection-seeding was observed with more than 20 ns delay; less delay than this resulted in poorer seeding. Minimizing the seed laser turn on time allowed harder pumping of the power oscillator, hence higher output energy, while maining good seeding. The spectral output from the power oscillator was analyzed using both an etalon and a 1-m MacPherson spectrometer. The seeded power oscillator is shown to closely replicate the seed laser output, operating on 2 or 3 longitudinal modes.

  13. Effect of sulfur removal on Al2O3 scale adhesion

    NASA Technical Reports Server (NTRS)

    Smialek, James L.

    1991-01-01

    The effect of removing sulfur impurity on the adhesion of Al2O3 scale to NiCrAl was investigated in four experiments. It was found that removing sulfur to concentration less than 1 ppm per weight is sufficient to produce a very significant degree of alpha-Al2O3 scale adhesion to undoped NiCrAl alloys. Results of experiments show that repeated oxidation, and polishing after each oxidation cycle, of pure NiCrAl alloy lowered sulfur content from 10 to 2 ppm by weight (presumably by removing the segregated interfacial layer after each cycle); thinner samples became adherent after fewer oxidation-polishing cycles because of more limited supply of sulfur. It was found that spalling in subsequent cyclic oxidation tests was a direct function of the initial sulfur content. The transition between the adherent and nonadherent behavior was modeled in terms of sulfur flux, sulfur content, and sulfur segregation.

  14. Visible luminescence of Al2O3 nanoparticles embedded in silica glass host matrix

    NASA Astrophysics Data System (ADS)

    El Mir, L.; Amlouk, A.; Barthou, C.

    2006-11-01

    This paper deals with the sol gel elaboration and defects photoluminescence (PL) examination of Al2O3 nanocrystallites (size ˜30 nm) confined in glass based on silica aerogel. Aluminium oxide aerogels were synthesized using esterification reaction for hydrolysis of the precursor and supercritical conditions of ethyl alcohol for drying. The obtained nanopowder was incorporated in SiO2 host matrix. After heating under natural atmosphere at 1150 °C for 2 h, the composite Al2O3/SiO2 (AS) exhibited a strong PL bands at 400 600 and 700 900 nm in 78 300 K temperature range. PL excitation (PLE) measurements show different origins of the emission. It was suggested that OH-related radiative centres and non-bridging oxygen hole centres (NBOHCs) were responsible for the bands at 400 600 and 700 900 nm, respectively.

  15. Modification of Fluorinated Al2O3 Surface by Irradiating H2 and O2 Plasmas

    NASA Astrophysics Data System (ADS)

    Miwa, Kazuhiro; Usami, Kenji; Takada, Noriharu; Sasaki, Koichi

    2009-12-01

    We irradiated H2 and O2 plasmas onto fluorinated Al2O3, which was prepared by exposing a virgin Al2O3 sample to an SF6/O2 plasma. The effects of the H2 plasma irradiation were the reduction of the AlOxFy (x + y = 1.5) and AlFx (x < 3) bonding components and the realization of smooth sample surface. It was observed that the irradiation of the H2 plasma induced Al-OH bonding. The Al-OH bonding was removed by the sequential irradiation of the O2 plasma after the H2 plasma irradiation. The O2 plasma irradiation also resulted in peroxidation and an increase in surface roughness.

  16. Effect of hydrogen on Al2O3/Cu interfacial structure and adhesion

    NASA Astrophysics Data System (ADS)

    Wang, Xiao-Gang; Smith, John R.; Scheffler, Matthias

    2002-08-01

    We have carried out an ab initio investigation of the effect of hydrogen on the Al2O3/Cu interface. H on the Al2O3 surface can play a bridging role in the formation of the interface. The interfacial OH bond is stable in the presence of two atomic layers of Cu. In contrast, an Al monolayer would dissociate the surface OH bond. For thicker Cu, one-third of a monolayer of H remains stable in the interface, lowering the work of separation by 2.3 J/m2. The interfacial work of separation remains larger than that of bulk Cu, however. These results are consistent with available experimental data.

  17. Luminescence study of nanosized Al2O3:Tb3+ obtained by gas-dispersed synthesis

    NASA Astrophysics Data System (ADS)

    Berezovskaya, I. V.; Poletaev, N. I.; Khlebnikova, M. E.; Zatovsky, I. V.; Bychkov, K. L.; Efryushina, N. P.; Khomenko, O. V.; Dotsenko, V. P.

    2016-09-01

    Terbium-doped Al2O3 samples were obtained by gas-dispersed synthesis. It was shown that the resulting powders, with particle sizes of 10-70 nm, consist of a mixture of transition aluminas, among which the δ *-polymorph is dominant. The luminescence properties of Al2O3:Tb3+ have been studied upon excitation in the UV-visible range of the spectrum. It was found that Tb3+ ions cause several groups of inhomogeneously broadened emission bands in the range of 470-640 nm, which are characteristic for disordered materials. In addition, the emission spectra contain a broad band at about 450 nm and several narrower ones in the 680-720 nm region. These features are attributed to surface defects and impurity Cr3+ ions occupying Al3+ octahedral positions, respectively.

  18. Pressure sintering of Si3N4-Al2O3 /Sialon/

    NASA Technical Reports Server (NTRS)

    Yeh, H. C.; Sanders, W. A.; Fiyalko Luttner, J. L.

    1977-01-01

    Essentially pore-free Sialon bodies were obtained by pressure sintering for three blends (mol ratios of 4:1, 2:3, and 3:2) of Si3N4 and Al2O3 powders under the conditions of 27.6 MN/sq m and a temperature of 1700 C for 2 h. These dense bodies consist mainly of a Sialon solid solution with a minor amount of a particular second phase. The higher the Al2O3 content (20 to 60 mol% range) in Sialon, the higher the densification rate. Fully dense bodies can be obtained at temperatures as low as 1500 C at 27.6 MN/sq m for 2 h with no second phase detectable by X-ray diffraction. A 100% dense body can be obtained by heating at 1700 C at 27.6 MN/sq m without a holding time.

  19. Electron paramagnetic resonance of Er3+ ions in a polycrystalline α-Al2O3

    NASA Astrophysics Data System (ADS)

    Asatryan, H. R.; Zakharchenya, R. I.; Kutsenko, A. B.; Babunts, R. A.; Baranov, P. G.

    2007-06-01

    The EPR spectra of rare-earth Er3+ ions in a polycrystalline corundum α-Al2O3 synthesized by the sol-gel technology were revealed. It is shown that the EPR spectra belong to the Er3+ ions in the ground state corresponding to the lower Stark sublevel of the 4 I 15/2 term and can be described by the spin Hamiltonian of axial symmetry with an effective spin S = 1/2 and the g tensor with components g ‖ = 12.176 and g ⊥ = 4.14. The average value of the g tensor ( = 6.82) corresponds to the Γ7 state in a cubic field. Erbium is assumed to substitute for aluminum in the Al2O3 corundum crystal. The local symmetry C 3 of the Al3+ ion remains despite the pronounced expansion of the lattice around the Er3+ ion.

  20. Versatile sputtering technology for Al2O3 gate insulators on graphene.

    PubMed

    Friedemann, Miriam; Woszczyna, Mirosław; Müller, André; Wundrack, Stefan; Dziomba, Thorsten; Weimann, Thomas; Ahlers, Franz J

    2012-04-01

    We report a novel, sputtering-based fabrication method of Al2O3 gate insulators on graphene. Electrical performance of dual-gated mono- and bilayer exfoliated graphene devices is presented. Sputtered Al2O3 layers possess comparable quality to oxides obtained by atomic layer deposition with respect to a high relative dielectric constant of about 8, as well as low-hysteresis performance and high breakdown voltage. We observe a moderate carrier mobility of about 1000 cm(2) V(-1) s(-1) in monolayer graphene and 350 cm(2) V(-1) s(-1) in bilayer graphene, respectively. The mobility decrease can be attributed to the resonant scattering on atomic-scale defects, likely originating from the Al precursor layer evaporated prior to sputtering.

  1. N-doped carbon@Ni-Al2O3 nanosheet array@graphene oxide composite as an electrocatalyst for hydrogen evolution reaction in alkaline medium

    NASA Astrophysics Data System (ADS)

    Wang, Juan; Qiu, Tian; Chen, Xu; Lu, Yanluo; Yang, Wensheng

    2015-10-01

    An NiAl-layered double-hydroxide (NiAl-LDH) nanosheet array is grown on a graphene oxide (GO) substrate (NiAl-LDH@GO) by the hydrothermal method. The NiAl-LDH@GO is used as the precursor to synthetize an N-doped carbon@Ni-Al2O3 nanosheet array@GO composite (N-C@Ni-Al2O3@GO) by coating with dopamine followed by calcination. The N-C@Ni-Al2O3@GO is used as a non-noble metal electrocatalyst for hydrogen evolution reaction in alkaline medium, and exhibits high electrocatalytic activity with low onset overpotential (-75 mV). The improved electrocatalytic performance of N-C@Ni-Al2O3@GO arises from its intrinsic features. First, it has a high specific surface area with the Ni nanoparticles in the composite dispersed well and the sizes of Ni nanoparticles are small, which lead to the exposure of more active sites for electrocatalysis. Second, there is a synergistic effect between the Ni nanoparticles and the N-C coating layer, which is beneficial to reduce the activation energy of the Volmer step and improve the electrocatalytic activity. Third, the N-C coating layer and the XC-72 additive can form an electrically conductive network, which serves as a bridge for the transfer of electrons from the electrode to the Ni nanoparticles.

  2. Physical properties of core-concrete systems: Al2O3-ZrO2 molten materials measured by aerodynamic levitation

    NASA Astrophysics Data System (ADS)

    Ohishi, Yuji; Kargl, F.; Nakamori, F.; Muta, Hiroaki; Kurosaki, Ken; Yamanaka, Shinsuke

    2017-04-01

    During a molten core-concrete interaction, molten oxides consisting of molten core materials (UO2 and ZrO2) and concrete (Al2O3, SiO2, CaO) are formed. Reliable data on the physical properties of the molten oxides will allow us to accurately predict the progression of a nuclear reactor core meltdown accident. In this study, the viscosities and densities of molten (ZrO2)x(Al2O3)1-x (x = 0.356 and 0.172) were measured using an aerodynamic levitation technique. The densities of two small samples were estimated from their masses and their volumes (calculated from recorded images of the molten samples). The droplets were forced to oscillate using speakers, and their viscosities were evaluated from the damping behaviors of their oscillations. The results showed that the viscosity of molten (ZrO2)x(Al2O3)1-x compared to that of pure molten Al2O3 is 25% lower for x = 0.172, while it is unexpectedly 20% higher for x = 0.356.

  3. Stoichiometry of the ALD-Al2O3/4H-SiC interface by synchrotron-based XPS

    NASA Astrophysics Data System (ADS)

    Usman, Muhammad; Saveda Suvanam, Sethu; Ghadami Yazdi, Milad; Göthelid, Mats; Sultan, Muhammad; Hallén, Anders

    2016-06-01

    The interface of Al2O3 with 4H-SiC is investigated with synchrotron-based high-resolution x-ray photoelectron spectroscopy to clarify the effect of post-dielectric deposition annealing processes (rapid thermal annealing (RTA) and furnace annealing (FA)) involved in device fabrication. Our results show that post-deposition annealing of Al2O3/4H-SiC up to 1100 °C forms a thin interfacial layer of SiO2 between Al2O3 and SiC, which possibly improves the dielectric properties of the system by reducing oxide charges and near-interface traps. Moreover, the formation of SiO2 at the interface gives additional band offset to the dielectric system. We have also observed that the RTA and FA processes have similar results at a high temperature of 1100 °C. Therefore, we propose that high-temperature post-oxide (Al2O3) deposition annealing of up to 1100 °C may be used in device processing, which can improve overall dielectric properties and consequently the device performance.

  4. Preparation of HZSM-5 membrane packed CuO-ZnO-Al2O3 nanoparticles for catalysing carbon dioxide hydrogenation to dimethyl ether

    NASA Astrophysics Data System (ADS)

    Liu, Rong; Tian, Haifeng; Yang, Aimei; Zha, Fei; Ding, Jian; Chang, Yue

    2015-08-01

    Spherical carbons were prepared successfully from aqueous glucose using hydrothermal method. After covered with aqueous Cu2+, Zn2+ and Al3+ ions during the co-precipitation treatment, carbons were removed via calcination to yield CuO-ZnO-Al2O3 nanoparticles. HZSM-5 membrane, which was synthesized using tetrapropylammonium hydroxide as templating agent, was packed onto CuO-ZnO-Al2O3 nanoparticles hydrothermally to form HZSM-5 packed CuO-ZnO-Al2O3 nanoparticles. It was characterized by the method of X-ray powder diffraction (XRD), scanning electronic microscopy (SEM), transmission electron microscopy (TEM), thermogravimetric analysis (TGA), and nitrogen sorption measurement. HZSM-5 packed CuO-ZnO-Al2O3 nanoparticles were used as catalysts for the CO2 hydrogenation to dimethyl ether. The catalyst activity was investigated in a fixed-bed reactor. Under the reaction conditions of pressure at 3.0 MPa, space velocity (SV) of 1800 mL gcat-1 h-1, volume ratio of CO2/H2 to 1:3 and temperature at 270 °C, the conversion of CO2 could reach to 48.3%, with a dimethyl ether yield and selectivity of 23.4% and 48.5%, respectively.

  5. Oxidation of elemental mercury vapor over gamma-Al2O3 supported CuCl2 catalyst for mercury emissions control

    SciTech Connect

    Liu, Zhouyang; Liu, Xin; Lee, Joo-Youp; Bolin, Trudy B.

    2015-09-01

    In our previous studies, CuCl2 demonstrated excellent Hg(0) oxidation capability and holds potential for Hg(0) oxidation in coal-fired power plants. In this study, the properties and performances of CuCl2 supported onto gamma-Al2O3 with high surface area were investigated. From various characterization techniques using XPS, XAFS, XRD, TPR, SEM and TGA, the existence of multiple copper species was identified. At low CuCl2 loadings, CuCl2 forms copper aluminate species with gamma-Al2O3 and is inactive for Hg(0) oxidation. At high loadings, amorphous CuCl2 forms onto the gamma-Al2O3 surface, working as a redox catalyst for Hg(0) oxidation by consuming Cl to be converted into CuCl and then being regenerated back into CuCl2 in the presence of O-2 and HCl gases. The 10%(wt) CuCl2/gamma-Al2O3 catalyst showed excellent Hg(0) oxidation performance and SO2 resistance at 140 degrees C under simulated flue gas conditions containing 6%(v) O-2 and 10 ppmv HCl. The oxidized Hg(0) in the form of HgCl2 has a high solubility in water and can be easily captured by other air pollution control systems such as wet scrubbers in coal-fired power plants. The CuCl2/gamma-Al2O3 catalyst can be used as a low temperature Hg(0) oxidation catalyst. (C) 2015 Elsevier B.V. All rights reserved.

  6. Characterization of Surface and Bulk Nitrates of γ-Al2O3-Supported Alkaline Earth Oxides using Density Functional Theory

    SciTech Connect

    Mei, Donghai; Ge, Qingfeng; Kwak, Ja Hun; Kim, Do Heui; Verrier, Christelle M.; Szanyi, Janos; Peden, Charles HF

    2009-05-14

    “Surface" and "bulk" nitrates formed on a series of alkaline earth oxides (AEOs), AE(NO3)2, were investigated using first-principles density functional theory calculations. The formation of these surface and bulk nitrates was modeled by the adsorption of NO2+NO3 pairs on gamma-Al2O3-supported monomeric AEOs (MgO, CaO, SrO, and BaO) and on the extended AEO(001) surfaces, respectively. The calculated vibrational frequencies of the surface and bulk nitrates based on our proposed models are in good agreement with experimental measurements of AEO/gamma-Al2O3 materials after prolonged NO2 exposure. This indicates that experimentally observed "surface" nitrates are most likely formed with isolated two dimensional (including monomeric) AEO clusters on the gamma-Al2O3 substrate, while the "bulk" nitrates are formed on exposed (including (001)) surfaces (and likely in the bulk as well) of large three dimensional AEO particles supported on the gamma-Al2O3 substrate. Also in line with the experiments, our calculations show that the low and high frequency components of the vibrations for both surface and bulk nitrates are systematically red shifted with the increasing basicity and cationic size of the AEOs. The adsorption strengths of NO2+NO3 pairs are nearly the same for the series of alumina-supported monomeric AEOs, while the adsorption strengths of NO2+NO3 pairs on the AEO surfaces increase in the order of MgO < CaO < SrO ~ BaO. Compared to the NO2+NO3 pair that only interacts with monomeric AEOs, the stability of NO2+NO3 pairs that interact with both the monomeric AEO and the gamma-Al2O3 substrate is enhanced by about 0.5 eV. Pacific Northwest National Laboratory is operated by Battelle for the US Department of Energy.

  7. Al2O3 Nanoparticle Addition to Commercial Magnesium Alloys: Multiple Beneficial Effects

    PubMed Central

    Paramsothy, Muralidharan; Chan, Jimmy; Kwok, Richard; Gupta, Manoj

    2012-01-01

    The multiple beneficial effects of Al2O3 nanoparticle addition to cast magnesium based systems (followed by extrusion) were investigated, constituting either: (a) enhanced strength; or (b) simultaneously enhanced strength and ductility of the corresponding magnesium alloys. AZ31 and ZK60A nanocomposites containing Al2O3 nanoparticle reinforcement were each fabricated using solidification processing followed by hot extrusion. Compared to monolithic AZ31 (tension levels), the corresponding nanocomposite exhibited higher yield strength (0.2% tensile yield strength (TYS)), ultimate strength (UTS), failure strain and work of fracture (WOF) (+19%, +21%, +113% and +162%, respectively). Compared to monolithic AZ31 (compression levels), the corresponding nanocomposite exhibited higher yield strength (0.2% compressive yield strength (CYS)) and ultimate strength (UCS), lower failure strain and higher WOF (+5%, +5%, −4% and +11%, respectively). Compared to monolithic ZK60A (tension levels), the corresponding nanocomposite exhibited lower 0.2% TYS and higher UTS, failure strain and WOF (−4%, +13%, +170% and +200%, respectively). Compared to monolithic ZK60A (compression levels), the corresponding nanocomposite exhibited lower 0.2% CYS and higher UCS, failure strain and WOF (−10%, +7%, +15% and +26%, respectively). The capability of Al2O3 nanoparticles to enhance the properties of cast magnesium alloys in a way never seen before with micron length scale reinforcements is clearly demonstrated.

  8. Tribological Behavior of A356/Al2O3 Surface Nanocomposite Prepared by Friction Stir Processing

    NASA Astrophysics Data System (ADS)

    Mazaheri, Y.; Karimzadeh, F.; Enayati, M. H.

    2014-04-01

    Surface A356 aluminum alloy matrix composites containing micro and nanosized Al2O3 are prepared by a new approach utilizing high-velocity oxy-fuel spraying and friction stir processing (FSP). Optical and scanning electron microscopy, microhardness, and wear tests were used to characterize the surface composites. Results indicated that, the presence of Al2O3 in matrix can improve the mechanical properties of specimens. The microhardness of surface composites containing micro and nanosized Al2O3 were 89.8 ± 2.6 HV and 109.7 ± 2.5 HV, respectively, which were higher than those for the as-received (79.6 ± 1.1 HV) and the FSPed A356-T6 with no alumina powder (66.8 ± 0.9 HV). Surface composites revealed low friction coefficients and wear rates, which were significantly lower than those obtained for substrate. The wear mass losses of the as-received, the FSPed, and surface micro and nanocomposite specimens after 500-m sliding distance were 50.5, 55.6, 31, and 17.2 mg, respectively. Scanning electron microscopy tests revealed different wear mechanisms on the surface of the wear test specimens.

  9. Paramagnetic Spins on -Al2O3 with Varied Surface Termination

    NASA Astrophysics Data System (ADS)

    Ray, Keith; Lee, Donghwa; Adelstein, Nicole; Dubois, Jonathan; Lordi, Vincenzo

    Superconducting qubits (SQs) are promising building blocks for a quantum computer, however, coherence in SQs is reduced by unintended coupling to magnetic noise sources. The microscopic origins of the magnetic noise have not been satisfactorily characterized. Building on previous computational studies of magnetic spins induced by molecules adsorbed on bare Al terminated Al2O3, we present a density functional theory investigation of magnetic noise associated with other Al2O3 surfaces likely to be encountered in experiment. We calculate the exchange interaction between native defects and adsorbed molecules, as well as the magnetic states energy splitting and anisotropy, on fully hydroxylated Al2O3, with and without a water over-layer. We also present simulated x-ray adsorption and x-ray magnetic circular dichroism spectra of these systems with the aim of aiding experimental surface characterization. This work was performed under the auspices of the U.S. Department of Energy by Lawrence Livermore National Laboratory under contract DE-AC52-07NA27344.

  10. The electrical conductivity of Al2O3 under shock-compression

    PubMed Central

    Liu, Hanyu; Tse, John S.; Nellis, W. J.

    2015-01-01

    Sapphire (Al2O3) crystals are used below 100 GPa as anvils and windows in dynamic-compression experiments because of their transparency and high density. Above 100 GPa shock pressures, sapphire becomes opaque and electrically conducting because of shock-induced defects. Such effects prevent temperature and dc conductivity measurements of materials compressed quasi-isentropically. Opacities and electrical conductivities at ~100 GPa are non-equilibrium, rather than thermodynamic parameters. We have performed electronic structure calculations as a guide in predicting and interpreting shock experiments and possibly to discover a window up to ~200 GPa. Our calculations indicate shocked sapphire does not metallize by band overlap at ~300 GPa, as suggested previously by measured non-equilibrium data. Shock-compressed Al2O3 melts to a metallic liquid at ~500 GPa and 10,000 K and its conductivity increases rapidly to ~2000 Ω−1cm−1 at ~900 GPa. At these high shock temperatures and pressures sapphire is in thermal equilibrium. Calculated conductivity of Al2O3 is similar to those measured for metallic fluid H, N, O, Rb, and Cs. Despite different materials, pressures and temperatures, and compression techniques, both experimental and theoretical, conductivities of all these poor metals reach a common end state typical of strong-scattering disordered materials. PMID:26239369

  11. Theoretical insight into Cobalt subnano-clusters adsorption on α-Al2O3 (0001)

    NASA Astrophysics Data System (ADS)

    Gao, Fen-e.; Ren, Jun; Wang, Qiang; Li, Debao; Hou, Bo; Jia, Litao; Cao, Duanlin

    2017-02-01

    The investigation on the structural stability, nucleation, growth and interaction of cobalt cluster Con(n=2-7) on the α-Al2O3(0001) surface by using density functional theory methods has been reported. Energetically, the most favorable adsorption sites were identified and the strongest adsorption energy cluster is the tetrahedral Co4 cluster. On the other hand, the nucleation of Con(n=2-7) clusters on the surface is exothermic and thermodynamically favorable. Moreover, even-odd alternation was found with respect to clusters nucleation as a function of the number of cobalt atoms (for n=1-7). Meanwhile, the Con clusters can be adsorbed on the surface stably owing to the charge transfer from Co atoms to Al and O atoms of the Al2O3 substrate. In addition, we establish the crucial importance of monomer, dimer and trimer diffusion on the surface. The diffusion of the monomer cobalt from Al(3) to O(5) or O(5) to Al(4) site is quite easy on the Al2O3(0001) surface, whereas the diffusion of the Co2 dimer is thermodynamically unfavorable by compared with that of the Co adatom and Co3 trimer.

  12. Insight into the effects of different ageing protocols on Rh/Al2O3 catalyst

    NASA Astrophysics Data System (ADS)

    Zhao, Baohuai; Ran, Rui; Cao, Yidan; Wu, Xiaodong; Weng, Duan; Fan, Jun; Wu, Xueyuan

    2014-07-01

    In this work, a catalyst of Rh loaded on Al2O3 was prepared by impregnating method with rhodium nitrate aqueous solution as the Rh precursor. The catalyst was aged under different protocols (lean, rich, inert and cyclic) to obtain several aged samples. All the Rh/Al2O3 samples were characterized by X-ray diffraction (XRD), Brunauer-Emmett-Teller (BET) method, CO-chemisorption, H2-temperature programmed reduction (H2-TPR), transmission electron microscope (TEM) and X-ray photoelectron spectroscopy (XPS). It was found that a specific ageing treatment could strongly affect the catalytic activity. The N2 aged and the H2 aged samples had a better catalytic activity for CO + NO reaction than the fresh sample while the air aged and the cyclic aged samples exhibited much worse activity. More surface Rh content and better reducibility were obtained in the N2 and the H2 aged samples and the Rh particles existed with an appropriate size, which were all favorable to the catalytic reaction. However, the air and the cyclic ageing protocols induced a strong interaction between Rh species and the Al2O3 support, which resulted in a severe sintering of particles of Rh species and the loss of active sites. The structure evolution scheme of the catalysts aged in different protocols was also established in this paper.

  13. Room Temperature Radiolytic Synthesized Cu@CuAlO2-Al2O3 Nanoparticles

    PubMed Central

    Abedini, Alam; Saion, Elias; Larki, Farhad; Zakaria, Azmi; Noroozi, Monir; Soltani, Nayereh

    2012-01-01

    Colloidal Cu@CuAlO2-Al2O3 bimetallic nanoparticles were prepared by a gamma irradiation method in an aqueous system in the presence of polyvinyl pyrrolidone (PVP) and isopropanol respectively as a colloidal stabilizer and scavenger of hydrogen and hydroxyl radicals. The gamma irradiation was carried out in a 60Co gamma source chamber with different doses up to 120 kGy. The formation of Cu@CuAlO2-Al2O3 nanoparticles was observed initially by the change in color of the colloidal samples from colorless to brown. Fourier transform infrared spectroscopy (FTIR) confirmed the presence of bonds between polymer chains and the metal surface at all radiation doses. Results of transmission electron microscopy (TEM), energy dispersive X-ray spectrometry (EDX), and X-ray diffraction (XRD) showed that Cu@CuAlO2-Al2O3 nanoparticles are in a core-shell structure. By controlling the absorbed dose and precursor concentration, nanoclusters with different particle sizes were obtained. The average particle diameter increased with increased precursor concentration and decreased with increased dose. This is due to the competition between nucleation, growth, and aggregation processes in the formation of nanoclusters during irradiation. PMID:23109893

  14. A short-time fading study of Al2O3:C

    NASA Astrophysics Data System (ADS)

    Nascimento, L. F.; Vanhavere, F.; Silva, E. H.; Deene, Y. De

    2015-01-01

    This paper studies the short-time fading from Al2O3:C by measuring optically stimulated luminescence (OSL) signals (Total OSL: TOSL, and Peak OSL: POSL) from droplets and Luxel™ pellets. The influence of various bleaching regimes (blue, green and white) and light power is compared. The fading effect is the decay of the OSL signal in the dark at room temperature. Al2O3:C detectors were submitted to various bleaching regimes, irradiated with a reference dose and read out after different time spans. Investigations were carried out using 2 mm size droplet detectors, made of thin Al2O3:C powder mixed with a photocured polymer. Tests were compared to Luxel™-type detectors (Landauer Inc.). Short-time post-irradiation fading is present in OSL results (TOSL and POSL) droplets for time spans up to 200 s. The effect of short-time fading can be lowered/removed when treating the detectors with high-power and/or long time bleaching regimes; this result was observed in both TOSL and POSL from droplets and Luxel™.

  15. Simulation of pressure-induced phase transition in liquid and amorphous Al2 O3

    NASA Astrophysics Data System (ADS)

    Hoang, Vo Van; Oh, Suhk Kun

    2005-08-01

    We investigated the pressure-induced structural transformation in liquid and amorphous Al2O3 by the molecular dynamics (MD) method. Simulations were done in the basic cube under periodic boundary conditions containing 3000 ions with Born-Mayer type pair potentials. The structure of the amorphous Al2O3 model with real density at ambient pressure is in good agreement with Lamparter’s experiment. In order to study the amorphous-amorphous phase transition, 23 models of amorphous alumina at the temperature of 350K and at densities ranging from 2.83to5.0gcm-3 had been built. The microstructure of the Al2O3 systems had been analyzed through pair radial distribution functions, coordination number distributions, interatomic distances, and bond-angle distributions. Here we found clear evidence of a structural transition in amorphous alumina from a tetrahedral to an octahedral network upon compression. According to our results, this transformation occurred at densities ranging from 3.6to4.05gcm-3 . We also presented the amorphous-amorphous phase transition from an octahedral to a tetrahedral network structure upon decompression at densities ranging from 5.00to2.83gcm-3 . Also, the same study was carried out for the liquid state of the system at the temperature of 3500K , and the liquid-liquid phase transition had been discussed.

  16. Impact of Al2O3 on the aggregation and deposition of graphene oxide.

    PubMed

    Ren, Xuemei; Li, Jiaxing; Tan, Xiaoli; Shi, Weiqun; Chen, Changlun; Shao, Dadong; Wen, Tao; Wang, Longfei; Zhao, Guixia; Sheng, Guoping; Wang, Xiangke

    2014-05-20

    To assess the environmental behavior and impact of graphene oxide (GO) on living organisms more accurately, the aggregation of GO and its deposition on Al2O3 particles were systematically investigated using batch experiments across a wide range of solution chemistries. The results indicated that the aggregation of GO and its deposition on Al2O3 depended on the solution pH and the types and concentrations of electrolytes. MgCl2 and CaCl2 destabilized GO because of their effective charge screening and neutralization, and the presence of NaH2PO4 and poly(acrylic acid) (PAA) improved the stability of GO with the increase in pH values as a result of electrostatic interactions and steric repulsion. Specifically, the dissolution of Al2O3 contributed to GO aggregation at relatively low pH or high pH values. Results from this study provide critical information for predicting the fate of GO in aquatic-terrestrial transition zones, where aluminum (hydro)oxides are present.

  17. Aqueous-phase reforming of n-BuOH over Ni/Al 2O 3 and Ni/CeO 2 catalysts

    NASA Astrophysics Data System (ADS)

    Roy, B.; Sullivan, H.; Leclerc, C. A.

    The aqueous-phase reforming (APR) of n-butanol (n-BuOH) over Ni(20 wt%) loaded Al 2O 3 and CeO 2 catalysts has been studied in this paper. Over 100 h of run time, the Ni/Al 2O 3 catalyst showed significant deactivation compared to the Ni/CeO 2 catalyst, both in terms of production rates and the selectivity to H 2 and CO 2. The Ni/CeO 2 catalyst demonstrated higher selectivity for H 2 and CO 2, lower selectivity to alkanes, and a lower amount of C in the liquid phase compared to the Ni/Al 2O 3 sample. For the Ni/Al 2O 3 catalyst, the selectivity to CO increased with temperature, while the Ni/CeO 2 catalyst produced no CO. For the Ni/CeO 2 catalyst, the activation energies for H 2 and CO 2 production were 146 and 169 kJ mol -1, while for the Ni/Al 2O 3 catalyst these activation energies were 158 and 175 kJ mol -1, respectively. The difference of the active metal dispersion on Al 2O 3 and CeO 2 supports, as measured from H 2-pulse chemisorption was not significant. This indicates deposition of carbon on the catalyst as a likely cause of lower activity of the Ni/Al 2O 3 catalyst. It is unlikely that carbon would build up on the Ni/CeO 2 catalyst due to higher oxygen mobility in the Ni doped non-stoichiometric CeO 2 lattice. Based on the products formed, the proposed primary reaction pathway is the dehydrogenation of n-BuOH to butaldehyde followed by decarbonylation to propane. The propane then partially breaks down to hydrogen and carbon monoxide through steam reforming, while CO converts to CO 2 mostly through water gas shift. Ethane and methane are formed via Fischer-Tropsch reactions of CO/CO 2 with H 2.

  18. Technical Performance of the Luxel Al2O3:C Optically Stimulated Luminescence Dosemeter Element at Radiation Oncology and Nuclear Accident Dose Levels

    SciTech Connect

    Miller, Steven D.; Murphy, Mark K.

    2006-12-12

    The dose ranges typical for radiation oncology and nuclear accident dosimetry are on the order of 2?70 Gy and 0.1?5 Gy, respectively. In terms of solid-state passive dosimetry; thermoluminescent (TL) materials historically have been used extensively for these two applications, with silver-halide, leuco-dye, and BaFBr:Eu-based films being used on a more limited basis than TL for radiation oncology. This present work provides results on the performance of a film based on an aluminum oxide, Al2O3:C, for these dosimetry applications, using the optically-stimulated luminescence (OSL) readout method. There have been few investigations of Al2O3:C performance at radiation oncology and nuclear accident dose levels, and these have included minimal dosimetric and environmental effects information. Based on investigations already published, the authors of this present study determined that overall improvements over film and TLDs for this Al2O3:C OSL technology at radiation oncology and nuclear accident dose levels may include (1) a more tissue-equivalent response to photons compared to X-ray film, (2) higher sensitivity, (3) ability to reread dosemeters, and (4) diagnostic capability using small-area imaging. The results of the present investigation indicate that additional favorable performance characteristics for the Al2O3:C dosemeter are a wide dynamic range(0.001 to 100 Gy), a response insensitive to temperature and moisture over a wide range, negligible dose rate dependence, and minimal change in post-irradiation response. As a radiation detection medium, this OSL phosphor offers an assortment of dosimetry properties that will permit it to compete with current radiation detection technologies such as silver-halide, leuco-dye, and photostimulable-phosphor based films, as well as TLDs.

  19. Technical performance of the Luxel Al(2)O(3):C optically stimulated luminescence dosemeter element at radiation oncology and nuclear accident dose levels.

    PubMed

    Miller, Steven D; Murphy, Mark K

    2007-01-01

    The dose ranges typical for radiation oncology and nuclear accident dosimetry are on the order of 2-70 Gy and 0.1-5 Gy, respectively. In terms of solid-state passive dosimetry, thermoluminescent (TL) materials historically have been used extensively for these two applications, with silver-halide, leuco-dye and BaFBr:Eu-based films being used on a more limited basis than TL for radiation oncology. This present work provides results on the performance of a film based on an aluminum oxide, Al(2)O(3):C, for these dosimetry applications, using the optically stimulated luminescence (OSL) readout method. There have been few investigations of Al(2)O(3):C performance at radiation oncology and nuclear accident dose levels, and these have included minimal dosimetric and environmental effects information. Based on investigations already published, the authors of this present study determined that overall improvements over film and TLDs for this Al(2)O(3):C OSL technology at radiation oncology and nuclear accident dose levels may include (1) a more tissue-equivalent response to photons compared to X-ray film, (2) higher sensitivity, (3) ability to reread dosemeters and (4) diagnostic capability using small-area imaging. The results of the present investigation indicate that additional favourable performance characteristics for the Al(2)O(3):C dosemeter are a wide dynamic range (0.001-100 Gy), a response insensitive to temperature and moisture over a wide range, negligible dose rate dependence, and minimal change in post-irradiation response. As a radiation detection medium, this OSL phosphor offers an assortment of dosimetry properties that will permit it to compete with current radiation detection technologies such as silver-halide, leuco-dye and photostimulable-phosphor-based films, as well as TLDs.

  20. Nanoclusters of MoO3-x embedded in an Al2O3 matrix engineered for customizable mesoscale resistivity and high dielectric strength

    NASA Astrophysics Data System (ADS)

    Tong, William M.; Brodie, Alan D.; Mane, Anil U.; Sun, Fuge; Kidwingira, Françoise; McCord, Mark A.; Bevis, Christopher F.; Elam, Jeffrey W.

    2013-06-01

    We have synthesized a material consisting of conducting metal oxide (MoO3-x) nanoclusters embedded in a high-dielectric-strength insulator (Al2O3) matrix. The resistivity of this material can be customized by varying the concentration of the MoO3-x nanoclusters. The Al2O3 protects the MoO3-x from stoichiometry change, thus conserving the number of carriers and maintaining a high dielectric strength. This composite material is grown by atomic layer deposition, a thin film deposition technique suitable for coating 3D structures. We applied these atomic layer deposition composite films to our 3D electron-optical micro electrical mechanical systems devices and greatly improved their performance.

  1. Atomic layer deposition of Al-doped ZnO/Al2O3 double layers on vertically aligned carbon nanofiber arrays.

    PubMed

    Malek, Gary A; Brown, Emery; Klankowski, Steven A; Liu, Jianwei; Elliot, Alan J; Lu, Rongtao; Li, Jun; Wu, Judy

    2014-05-14

    High-aspect-ratio, vertically aligned carbon nanofibers (VACNFs) were conformally coated with aluminum oxide (Al2O3) and aluminum-doped zinc oxide (AZO) using atomic layer deposition (ALD) in order to produce a three-dimensional array of metal-insulator-metal core-shell nanostructures. Prefunctionalization before ALD, as required for initiating covalent bonding on a carbon nanotube surface, was eliminated on VACNFs due to the graphitic edges along the surface of each CNF. The graphitic edges provided ideal nucleation sites under sequential exposures of H2O and trimethylaluminum to form an Al2O3 coating up to 20 nm in thickness. High-resolution transmission electron microscopy (HRTEM) and scanning electron microscopy images confirmed the conformal core-shell AZO/Al2O3/CNF structures while energy-dispersive X-ray spectroscopy verified the elemental composition of the different layers. HRTEM selected area electron diffraction revealed that the as-made Al2O3 by ALD at 200 °C was amorphous, and then, after annealing in air at 450 °C for 30 min, was converted to polycrystalline form. Nevertheless, comparable dielectric constants of 9.3 were obtained in both cases by cyclic voltammetry at a scan rate of 1000 V/s. The conformal core-shell AZO/Al2O3/VACNF array structure demonstrated in this work provides a promising three-dimensional architecture toward applications of solid-state capacitors with large surface area having a thin, leak-free dielectric.

  2. Optically stimulated luminescence (OSL) response of Al2O3:C, BaFCl:Eu and K2Ca2(SO4)3:Eu phosphors.

    PubMed

    Kumar, Pratik; Bahl, Shaila; Sahare, P D; Kumar, Surender; Singh, Manveer

    2015-12-01

    This paper investigates the optically stimulated luminescence (OSL) response of BaFCl:Eu and K2Ca2(SO4)3:Eu phosphors for different doses and bleaching durations. The results have also been compared with the commercially available Landauer Al2O3:C (Luxel®) dosemeter. Nanocrystalline K2Ca2(SO4)3:Eu is known to be a sensitive thermoluminescent phosphor, but its OSL response is hardly reported. At first, pellets of nanocrystalline K2Ca2(SO4)3:Eu powder were prepared by adding Teflon as a binder. Their OSL signal was compared with that of the material in pure form, i.e. without adding the binder (in 100:1 ratio). It was observed that adding the binder does not appreciably affect the OSL intensity. On comparison with the commercially available Al2O3:C from Landauer, it was found that K2Ca2(SO4)3:Eu is around 15 times less sensitive than Al2O3:C. 'Homemade' BaFCl:Eu phosphor has also been studied. The intensity of BaFCl:Eu was ∼20 times more than the standard Al2O3:C dosemeter and ∼200 times more sensitive than K2Ca2(SO4)3:Eu in the dose range of 13-200 cGy. OSL dosemeters are believed to give luminescence signal even if they are read before, i.e. multiple reading may be possible under suitable conditions after single exposure. This was also checked for all the prepared dosemeters and it was found that Al2O3:C showed the least decrease of <2 %, followed by BaFCl:Eu of 15 % and K2Ca2(SO4)3:Eu with 20 %. Finally, Al2O3:C and BaFCl:Eu phosphors were also studied for their optical bleaching durations to which the respective signals get completely removed so that the phosphor can be re-used. It was observed that BaFCl:Eu is bleached faster and more easily than Al2O3:C.

  3. Electrochemical promotion of propane oxidation on Pt deposited on a dense β″-Al2O3 ceramic Ag+ conductor

    PubMed Central

    Tsampas, Mihalis N.; Kambolis, Anastasios; Obeid, Emil; Lizarraga, Leonardo; Sapountzi, Foteini M.; Vernoux, Philippe

    2013-01-01

    A new kind of electrochemical catalyst based on a Pt porous catalyst film deposited on a β″-Al2O3 ceramic Ag+ conductor was developed and evaluated during propane oxidation. It was observed that, upon anodic polarization, the rate of propane combustion was significantly electropromoted up to 400%. Moreover, for the first time, exponential increase of the catalytic rate was evidenced during galvanostatic transient experiment in excellent agreement with EPOC equation. PMID:24790942

  4. A nanoplate-like α-Al2O3 out-layered Al2O3-ZrO2 coating fabricated by micro-arc oxidation for hip joint prosthesis

    NASA Astrophysics Data System (ADS)

    Zhang, Lan; Zhang, Wenting; Han, Yong; Tang, Wu

    2016-01-01

    A nanoplate-like α-Al2O3 out-layered Al2O3-ZrO2 coating was fabricated on Zr substrate by micro-arc oxidation (MAO). The structure, formation mechanism, anti-wear property and aging behavior of the coating were explored. The obtained results show that the coating is composed of Al2O3 and ZrO2; the amount and crystallinity of Al2O3 increase gradually from inner layer to the coating surface; monoclinic ZrO2 (m-ZrO2) and tetragonal ZrO2 (t-ZrO2) are both present in the coating, and the ratio of t-ZrO2/m-ZrO2 increases with closing to the coating surface by a "constraint" mechanism of Al2O3; the coating surface mainly consists of nanoplate-like α-Al2O3, and a small amount of nanocrystallized m- and t-ZrO2. The superimposition of α-Al2O3 growth unit on {0 0 0 1} face should be prohibited by PO43- during the MAO process, resulting in the formation of nanoplate-like α-Al2O3 on the coating surface. Compared with pure Zr, the coating shows noticeable improvement in wear-resistance. For aging behavior, although more t-ZrO2 in the coating is transformed to m-ZrO2 with increasing aging time, wear loss increases slightly. It indicates that the nanoplate-like α-Al2O3 out-layered Al2O3-ZrO2 is a potential coating for articular head replacement.

  5. Ultrasound assisted synthesis and physicochemical characterizations of fluorine-modified CoMo/Al2O3 nanocatalysts used for hydrodesulfurization of thiophene.

    PubMed

    Ebrahimynejad, Mitra; Haghighi, Mohammad; Asgari, Nazli

    2014-09-01

    A series of CoMo/F-Al2O3 nanocatalysts with different fluorine loadings of 0, 0.4, 0.8 and 1 wt% were successfully synthesized by a sonochemical method and used for catalytic hydrodesulfurization (HDS) of thiophene. The nanocatalysts were characterized with X-ray diffraction analysis (XRD), Field Emission Scanning Electron Microscopy (FESEM), BET nitrogen adsorption Brunauer-Emmett-Teller (BET) analysis, Fourier Transform Infrared Spectroscopy (FTIR) and temperature programmed desorption of ammonia (TPD-NH3) techniques. The XRD results showed a high dispersion of the molybdenum species on the γ-Al2O3 support due to the application of sonochemical method along with fluorine addition. The CoMo/F-Al2O3 nanocatalysts had a particle size less than 100 nm. The specific surface area of the samples was slightly decreased with increasing the fluorine content. The FTIR results confirmed that with the increase of fluorine amount in the CoMo/Al2O3 nanocatalysts, it would generate more active sites. Moreover, the TPD results showed that the fluorinated nanocatalysts had higher acidity than the promoter-free nanocatalysts, because of the formation of new strong acid sites on the γ-Al2O3 support by the promoter. The catalytic activity for thiophene HDS reaction was investigated in a stirred slurry-tank reactor in the atmospheric pressure to determine the effect of fluorine amount on the nanocatalyst performance. The results of thiophene HDS reaction showed that the fluorinated nanocatalysts were more active than fluorine-free nanocatalysts and consequently, they were able to remove nearly 100% of thiophene in the initial solution. Furthermore, the nanocatalyst with the fluorine content of 0.8 wt% had the highest activity in HDS of thiophene. However, further addition of fluorine led to decrease in catalytic activity which could be attributed to the agglomerated particles formed on the nanocatalyst surface.

  6. Structure, optical properties and thermal stability of Al2O3-WC nanocomposite ceramic spectrally selective solar absorbers

    NASA Astrophysics Data System (ADS)

    Gao, Xiang-Hu; Wang, Cheng-Bing; Guo, Zhi-Ming; Geng, Qing-Fen; Theiss, Wolfgang; Liu, Gang

    2016-08-01

    Traditional metal-dielectric composite coating has found important application in spectrally selective solar absorbers. However, fine metal particles can easily diffuse, congregate, or be oxidized at high temperature, which causes deterioration in the optical properties. In this work, we report a new spectrally selective solar absorber coating, composed of low Al2O3 ceramic volume fraction (Al2O3(L)-WC) layer, high Al2O3 ceramic volume fraction (Al2O3(H)-WC layer) and Al2O3 antireflection layer. The features of our work are: 1) compared with the metal-dielectric composites concept, Al2O3-WC nanocomposite ceramic successfully achieves the all-ceramic concept, which exhibits a high solar absorptance of 0.94 and a low thermal emittance of 0.08, 2) Al2O3 and WC act as filler material and host material, respectively, which are different from traditional concept, 3) Al2O3-WC nanocomposite ceramic solar absorber coating exhibits good thermal stability at 600 °C. In addition, the solar absorber coating is successfully modelled by a commercial optical simulation programme, the result of which agrees with the experimental results.

  7. Coherent 3D nanostructure of γ-Al2O3: Simulation of whole X-ray powder diffraction pattern

    NASA Astrophysics Data System (ADS)

    Pakharukova, V. P.; Yatsenko, D. A.; Gerasimov, E. Yu.; Shalygin, A. S.; Martyanov, O. N.; Tsybulya, S. V.

    2017-02-01

    The structure and nanostructure features of nanocrystalline γ-Al2O3 obtained by dehydration of boehmite with anisotropic platelet-shaped particles were investigated. The original models of 3D coherent nanostructure of γ-Al2O3 were constructed. The models of nanostructured γ-Al2O3 particles were first confirmed by a direct simulation of powder X-Ray diffraction (XRD) patterns using the Debye Scattering Equation (DSE) with assistance of high-resolution transmission electron microscopy (HRTEM) study. The average crystal structure of γ-Al2O3 was shown to be tetragonally distorted. The experimental results revealed that thin γ-Al2O3 platelets were heterogeneous on a nanometer scale and nanometer-sized building blocks were separated by partially coherent interfaces. The XRD simulation results showed that a specific packing of the primary crystalline blocks in the nanostructured γ-Al2O3 particles with formation of planar defects on {001}, {100}, and {101} planes nicely accounted for pronounced diffuse scattering, anisotropic peak broadening and peak shifts in the experimental XRD pattern. The identified planar defects in cation sublattice seem to be described as filling cation non-spinel sites in existing crystallographic models of γ-Al2O3 structure. The overall findings provided an insight into the complex nanostructure, which is intrinsic to the metastable γ-Al2O3 oxide.

  8. Structural and Magnetic Properties of Fe and Au Ion-Implanted Al2O3 Single Crystals

    NASA Astrophysics Data System (ADS)

    Kinoshita, Ryosuke; Sakamoto, Isao; Hayashi, Nobuyuki; Nomura, Kiyoshi; Honda, Shigeo; Ishida, Tomoya; Iio, Satoshi; Tashiro, Hiroyuki; Toriyama, Tamotsu

    2011-01-01

    Au ion implantation in Fe ion-implanted Al2O3 (Fe/Al2O3) has been performed in order to tailor the structural, magnetic and optical properties of Fe granules in Al2O3 matrix. After Au ion implantation, Rutherford backscattering (RBS) measurements indicate the decrease and the redistribution of retained Fe atoms with the inclusion of Au atoms, and the patterns of X-ray diffraction (XRD) show the formation of Au granules in the Fe/Al2O3. Besides, the magnetization curves of the Fe/Al2O3 after Au ion implantation show still the superparamagnetic characteristics and the decrease of saturation magnetization, and the optical absorption measurements indicate the formation of Au granules in the Fe/Al2O3 in accordance with the XRD result. In addition, we investigated a behavior of Fe granules in Al2O3 matrix by conversion electron Mössbauer spectroscopy (CEMS), which indicates the decrease of superparamagnetic state as a function of Au ion dose. As a result, it is suggested that Au ion implantation has potentialities to tailor the physical properties of Fe granules in Al2O3 matrix.

  9. Characterization of Al2O3 in High-Strength Mo Alloy Sheets by High-Resolution Transmission Electron Microscopy.

    PubMed

    Zhou, Yucheng; Gao, Yimin; Wei, Shizhong; Hu, Yajie

    2016-02-01

    A novel type of alumina (Al2O3)-doped molybdenum (Mo) alloy sheet was prepared by a hydrothermal method and a subsequent powder metallurgy process. Then the characterization of α-Al2O3 was investigated using high-resolution transmission electron microscopy as the research focus. The tensile strength of the Al2O3-doped Mo sheet is 43-85% higher than that of the pure Mo sheet, a very obvious reinforcement effect. The sub-micron and nanometer-scale Al2O3 particles can increase the recrystallization temperature by hindering grain boundary migration and improve the tensile strength by effectively blocking the motion of the dislocations. The Al2O3 particles have a good bond with the Mo matrix and there exists an amorphous transition layer at the interface between Al2O3 particles and the Mo matrix in the as-rolled sheet. The sub-structure of α-Al2O3 is characterized by a number of nanograins in the $\\left[ {2\\bar{2}1} \\right]$ direction. Lastly, a new computer-based method for indexing diffraction patterns of the hexagonal system is introduced, with 16 types of diffraction patterns of α-Al2O3 indexed.

  10. Au/n-InP Schottky diodes using an Al2O3 interfacial layer grown by atomic layer deposition

    NASA Astrophysics Data System (ADS)

    Kim, Hogyoung; Kim, Min Soo; Yoon, Seung Yu; Choi, Byung Joon

    2017-02-01

    We investigated the effect of an Al2O3 interfacial layer grown by atomic layer deposition on the electrical properties of Au Schottky contacts to n-type InP. Considering barrier inhomogeneity, modified Richardson plots yielded a Richardson constant of 8.4 and 7.5 Acm-2K-2, respectively, for the sample with and without the Al2O3 interlayer (theoretical value of 9.4 Acm-2K-2 for n-type InP). The dominant reverse current flow for the sample with an Al2O3 interlayer was found to be Poole-Frenkel emission. From capacitance-voltage measurements, it was observed that the capacitance for the sample without the Al2O3 interlayer was frequency dependent. Sputter-induced defects as well as structural defects were passivated effectively with an Al2O3 interlayer.

  11. Research on microcracks avoidance in processing of α-Al2O3 by ultrashort laser pulses

    NASA Astrophysics Data System (ADS)

    Wang, Cheng-Wei; Zhao, Quan-Zhong

    2013-07-01

    The optical crystal α-Al2O3 has been widely used as the matrix of ruby and blue sapphire for its wide transparency, high thermal conductivity, big scale and low cost. α-Al2O3 is so hard that cutter is easily abraded. Micromachining of α-Al2O3 by ultrashort pulsed laser is superior to the traditional mechanical approach as its non-contact and cold machining features. However, unexpected cracks on the surface of α-Al2O3 are observed after femtosecond laser machining. In order to hinder the crack source from stretching, we optimize the laser parameters accompanied with annealing. The crack-free machining can be achieved. Three-dimensional α-Al2O3 microstructures free from fracture, such as cylinder, barrel and sphere are demonstrated.

  12. Behavior of Al2O3 and SiO2 with heating in a Cl2 + CO stream

    NASA Technical Reports Server (NTRS)

    Shchetinin, L. K.

    1984-01-01

    Differential thermal analysis (DTA) and Thermogravimetric analysis (TGA) were used to study the chlorination of alpha-Al2O3, gamma-Al2O3 and amorphous SiO2 in a Cl + CO stream, for the preparation of AlCl3 and SiCl4. The chlorination starting temperatures were 235 deg for Al2O3 and 680 deg for SiO2. The chlorination of alpha- and gamma-Al2O3 takes place via the formation of AlOCl as an intermediate product, and its subsequent dissociation at 480 to 560 deg, according to 3AlOCl yields AlCl3 + Al2O3. The chlorination activation energies are given for the three oxides.

  13. Al2O3 influence on structural, elastic, thermal properties of Yb(3+) doped Ba-La-tellurite glass: evidence of reduction in self-radiation trapping at 1μm emission.

    PubMed

    Balaji, S; Biswas, K; Sontakke, A D; Gupta, G; Ghosh, D; Annapurna, K

    2014-12-10

    Ba-La-tellurite glasses doped with Yb(3+) ions have been prepared through melt quenching technique by modifying their composition with the inclusion of varied concentration of Al2O3 to elucidate its effects on glass structural, elastic, thermal properties and Yb(3+) ion NIR luminescence performance. The FTIR spectral analysis indicates Al2O3 addition is promoting the conversion of BOs from NBOs which have been generated during the process of depolymerisation of main glass forming TeO4 units. The elastic properties of the glass revealed an improved rigidity of the glass network on addition of Al2O3. In concurrence to this, differential thermal analysis showed an increase in glass transition temperature with improved thermal stability factor. Also, Yb(3+) fluorescence dynamics demonstrated that, Al2O3 inclusion helps in restraining the detrimental radiation trapping of ∼1μm emission.

  14. Removal of nitrate and phosphate using chitosan/Al2O3/Fe3O4 composite nanofibrous adsorbent: Comparison with chitosan/Al2O3/Fe3O4 beads.

    PubMed

    Bozorgpour, Farahnaz; Ramandi, Hossein Fasih; Jafari, Pooya; Samadi, Saman; Yazd, Shabnam Sharif; Aliabadi, Majid

    2016-12-01

    In the present study the chitosan/Al2O3/Fe3O4 composite nanofibrous adsorbent was prepared by electrospinning process and its application for the removal of nitrate and phosphate were compared with chitosan/Al2O3/Fe3O4 composite bead adsorbent. The influence of Al2O3/Fe3O4 composite content, pH, contact time, nitrate and phosphate initial concentrations and temperature on the nitrate and phosphate sorption using synthesized bead and nanofibrous adsorbents was investigated in a single system. The reusability of chitosan/Al2O3/Fe3O4 composite beads and nanofibers after five sorption-desorption cycles were carried out. The Box-Behnken design was used to investigate the interaction effects of adsorbent dosage, nitrate and phosphate initial concentrations on the nitrate and phosphate removal efficiency. The pseudo-second-order kinetic model and known Freundlich and Langmuir isotherm models were used to describe the kinetic and equilibrium data of nitrate and phosphate sorption using chitosan/Al2O3/Fe3O4 composite beads and nanofibers. The influence of other anions including chloride, fluoride and sulphate on the sorption efficiency of nitrate and phosphate was examined. The obtained results revealed the higher potential of chitosan/Al2O3/Fe3O4 composite nanofibers for nitrate and phosphate compared with chitosan/Al2O3/Fe3O4 composite beads.

  15. Aggregation and Colloidal Stability of Commercially Available Al2O3 Nanoparticles in Aqueous Environments

    PubMed Central

    Mui, Julie; Ngo, Jennifer; Kim, Bojeong

    2016-01-01

    The aggregation and colloidal stability of three, commercially-available, gamma-aluminum oxide nanoparticles (γ-Al2O3 NPs) (nominally 5, 10, and 20–30 nm) were systematically examined as a function of pH, ionic strength, humic acid (HA) or clay minerals (e.g., montmorillonite) concentration using dynamic light scattering and transmission electron microscopy techniques. NPs possess pH-dependent surface charges, with a point of zero charge (PZC) of pH 7.5 to 8. When pH < PZC, γ-Al2O3 NPs are colloidally stable up to 100 mM NaCl and 30 mM CaCl2. However, significant aggregation of NPs is pronounced in both electrolytes at high ionic strength. In mixed systems, both HA and montmorillonite enhance NP colloidal stability through electrostatic interactions and steric hindrance when pH ≤ PZC, whereas their surface interactions are quite limited when pH > PZC. Even when pH approximates PZC, NPs became stable at a HA concentration of 1 mg·L−1. The magnitude of interactions and dominant sites of interaction (basal planes versus edge sites) are significantly dependent on pH because both NPs and montmorillonite have pH-dependent (conditional) surface charges. Thus, solution pH, ionic strength, and the presence of natural colloids greatly modify the surface conditions of commercial γ-Al2O3 NPs, affecting aggregation and colloidal stability significantly in the aqueous environment. PMID:28335218

  16. Synthetic scope and mechanistic studies of Ru(OH)x/Al2O3-catalyzed heterogeneous hydrogen-transfer reactions.

    PubMed

    Yamaguchi, Kazuya; Koike, Takeshi; Kotani, Miyuki; Matsushita, Mitsunori; Shinachi, Satoshi; Mizuno, Noritaka

    2005-11-04

    Three kinds of hydrogen-transfer reactions, namely racemization of chiral secondary alcohols, reduction of carbonyl compounds to alcohols using 2-propanol as a hydrogen donor, and isomerization of allylic alcohols to saturated ketones, are efficiently promoted by the easily prepared and inexpensive supported ruthenium catalyst Ru(OH)x/Al2O3. A wide variety of substrates, such as aromatic, aliphatic, and heterocyclic alcohols or carbonyl compounds, can be converted into the desired products, under anaerobic conditions, in moderate to excellent yields and without the need for additives such as bases. A larger scale, solvent-free reaction is also demonstrated: the isomerization of 1-octen-3-ol with a substrate/catalyst ratio of 20,000/1 shows a very high turnover frequency (TOF) of 18,400 h(-1), with a turnover number (TON) that reaches 17,200. The catalysis for these reactions is intrinsically heterogeneous in nature, and the Ru(OH)x/Al2O3 recovered after the reactions can be reused without appreciable loss of catalytic performance. The reaction mechanism of the present Ru(OH)x/Al2O3-catalyzed hydrogen-transfer reactions were examined with monodeuterated substrates. After the racemization of (S)-1-deuterio-1-phenylethanol in the presence of acetophenone was complete, the deuterium content at the alpha-position of the corresponding racemic alcohol was 91%, whereas no deuterium was incorporated into the alpha-position during the racemization of (S)-1-phenylethanol-OD. These results show that direct carbon-to-carbon hydrogen transfer occurs via a metal monohydride for the racemization of chiral secondary alcohols and reduction of carbonyl compounds to alcohols. For the isomerization, the alpha-deuterium of 3-deuterio-1-octen-3-ol was selectively relocated at the beta-position of the corresponding ketones (99% D at the beta-position), suggesting the involvement of a 1,4-addition of ruthenium monohydride species to the alpha,beta-unsaturated ketone intermediate. The

  17. Phase Equilibria Studies in the System ZnO-``FeO''-Al2O3-CaO-SiO2 Relevant to Imperial Smelting Furnace Slags: Part II

    NASA Astrophysics Data System (ADS)

    Zhao, Baojun; Hayes, Peter C.; Jak, Evgueni

    2010-04-01

    The phase equilibria and the liquidus temperatures in the system ZnO-“FeO”-Al2O3-CaO-SiO2 have been determined experimentally in equilibrium with metallic iron. Specifically, the effects of Al2O3 concentrations in Imperial Smelting Furnace slags are identified, and the results are presented in the form of pseudo-ternary sections ZnO-“FeO”-(Al2O3 + CaO + SiO2) in which CaO/SiO2 = 0.93 and (CaO + SiO2)/Al2O3 = 5.0 and 3.5, respectively. It was found that, in the presence of Al2O3, the spinel phase is formed, the spinel primary phase field expands, and the wustite and melilite primary phase fields are reduced in size with an increasing Al2O3 concentration. The implications of the findings to industrial practice are discussed.

  18. Atomistic simulation of the pressure-temperature-volume diagram in α-Al 2O 3

    NASA Astrophysics Data System (ADS)

    Franco, R.; Blanco, M. A.; Martín Pendás, A.; Francisco, E.; Recio, J. M.

    1996-04-01

    We report the results of a theoretical investigation that explores for the first time temperature effects on the pressure-volume relationship in corundum. The ionic interactions within the α-Al 2O 3 crystal are modelized using the electron gas formalism along with electronic wavefunctions that are allowed to relax with crystal strains. A non-empirical Debye model is applied to account for the thermal contributions. Our study reveals that the crystal responds isotropically under both high-temperature and high-pressure conditions. Good agreement with hydrostatic and quasi-hydrostatic experimental data is achieved.

  19. Ultrasonic Al2O3 Ceramic Thermometry in High-Temperature Oxidation Environment

    PubMed Central

    Wei, Yanlong; Gao, Yubin; Xiao, Zhaoqian; Wang, Gao; Tian, Miao; Liang, Haijian

    2016-01-01

    In this study, an ultrasonic temperature measurement system was designed with Al2O3 high-temperature ceramic as an acoustic waveguide sensor and preliminarily tested in a high-temperature oxidation environment. The test results indicated that the system can indeed work stably in high-temperature environments. The relationship between the temperature and delay time of 26 °C–1600 °C ceramic materials was also determined in order to fully elucidate the high-temperature oxidation of the proposed waveguide sensor and to lay a foundation for the further application of this system in temperatures as high as 2000 °C. PMID:27845726

  20. Hydrogen and Carbon Effects on Al2O3 Surface Phases and Metal Deposition

    NASA Astrophysics Data System (ADS)

    Wang, Xiao-Gang; Smith, John

    2005-03-01

    Effects of H and C impurities on α-Al2O3 (0001) surface stability and metal wetting behavior are determined from first principles[1]. The ab initio surface phase diagram for H and C on the alumina surface reveals six distinct surface phases. These different surface phases exhibit a variety of adhesion strengths with Cu and Co, and correspondingly different wetting behaviors. These results are consistent with the varied wetting characteristics observed experimentally. [1] Xiao-Gang Wang and John R. Smith, Phys. Rev. B70, Rapid communications, 081401 (2004).

  1. Understanding the clean interface between covalent Si and ionic Al2O3.

    PubMed

    Xiang, H J; Da Silva, Juarez L F; Branz, Howard M; Wei, Su-Huai

    2009-09-11

    The atomic and electronic structures of the (001)-Si/(001)-gamma-Al(2)O(3) heterointerface are investigated by first principles total energy calculations combined with a newly developed "modified basin-hopping" method. It is found that all interface Si atoms are fourfold coordinated due to the formation of Si-O and unexpected covalent Si-Al bonds in the new abrupt interface model. And the interface has perfect electronic properties in that the unpassivated interface has a large LDA band gap and no gap levels. These results show that it is possible to have clean semiconductor-oxide interfaces.

  2. Viscosity affected by nanoparticle aggregation in Al2O3-water nanofluids.

    PubMed

    Duan, Fei; Kwek, Dingtian; Crivoi, Alexandru

    2011-03-22

    An investigation on viscosity was conducted 2 weeks after the Al2O3-water nanofluids having dispersants were prepared at the volume concentration of 1-5%. The shear stress was observed with a non-Newtonian behavior. On further ultrasonic agitation treatment, the nanofluids resumed as a Newtonian fluids. The relative viscosity increases as the volume concentrations increases. At 5% volume concentration, an increment was about 60% in the re-ultrasonication nanofluids in comparison with the base fluid. The microstructure analysis indicates that a higher nanoparticle aggregation had been observed in the nanofluids before re-ultrasonication.

  3. Head-up display using an inclined Al2O3 column array.

    PubMed

    Cho, Wen-Hao; Lee, Chao-Te; Kei, Chi-Chung; Liao, Bo-Huei; Chiang, Donyau; Lee, Cheng-Chung

    2014-02-01

    An orderly inclined Al2O3 column array was fabricated by atomic layer deposition and sequential electron beam evaporation using a hollow nanosphere template. The transmittance spectra at various angles of incidence were obtained through the use of a Perkin-Elmer Lambda 900 UV/VIS/NIR spectrometer. The inclined column array could display the image information through a scattering mechanism and was transparent at high viewing angles along the deposition plane. This characteristic of the inclined column array gives it potential for applications in head-up displays in the automotive industry.

  4. Novel guar gum/Al2O3 nanocomposite as an effective photocatalyst for the degradation of malachite green dye.

    PubMed

    Pathania, Deepak; Katwal, Rishu; Sharma, Gaurav; Naushad, Mu; Khan, Mohammad Rizwan; Al-Muhtaseb, Ala'a H

    2016-06-01

    Guar gum/Al2O3 (GG/AO) nanocomposite was prepared using simple and cost effective sol-gel method. This nanocomposite was characterized by several analytical techniques viz. scanning electron microscopy (SEM), transmission electron microscopy (TEM), X-ray diffraction (XRD), thermal analysis (TGA/DTA), Fourier transform infrared spectroscopy (FTIR) and ultraviolet-visible spectroscopy (UV-vis). The FTIR analysis confirmed that GG/AO composite material was formed. TEM images inferred the particle size in the range between 20 and 45nm. GG/AO nanocomposite exhibited good photocatalytic performance for malachite green (MG) dye (dye initial concentration 1.5×10(-5)M) degradation from aqueous phase. The adsorption followed by photocatalysis and coupled adsorption/photocatalysis reaction achieved about 80% and 90% degradation of MG dye under solar irradiation. Antibacterial test showed the excellent activity of GG/AO nanocomposite against Staphylococcus aureus.

  5. 3D and 2D structural characterization of 1D Al/Al2 O3 biphasic nanostructures.

    PubMed

    Miró, M Martinez; Veith, M; Lee, J; Soldera, F; Mücklich, F; Bennewitz, R; Aktas, C

    2015-05-01

    1D Al/Al2 O3 nanostructures have been synthesized by chemical vapour deposition (CVD) of the molecular precursor [(t) BuOAlH2 ]2 . The deposited nanostructures grow chaotically on the substrate forming a layer with a high porosity (80%). Depending on the deposition time, diverse nanostructured surfaces with different distribution densities were achieved. A three-dimensional (3D) reconstruction has been evaluated for every nanostructure density using the Focus Ion Beam (FIB) tomography technique and reconstruction software tools. Several structural parameters such as porosity, Euler number, geometrical tortuosity and aspect ratio have been quantified through the analysis with specified software of the reconstructions. Additionally roughness of the prepared surfaces has been characterized at micro- and nanoscale using profilometry and AFM techniques, respectively. While high aspects ratio around 20-30 indicates a strong anisotropy in the structure, high porosity values (around 80%) is observed as a consequence of highly tangled geometry of such 1D nanostructures.

  6. Colony structure in Ce-doped Al2O3/YAG eutectic systems grown by vertical Bridgman technique

    NASA Astrophysics Data System (ADS)

    Yamada, Seiya; Yoshimura, Masafumi; Sakata, Shin-ichi; Taishi, Toshinori; Hoshikawa, Keigo

    2016-08-01

    We investigated the influence of growth rate and Ce concentration on colony structure variation in Al2O3/YAG:Ce eutectic systems. The distance between boundary zones in the colony structure decreased with increases in either growth rate or Ce concentration. The eutectic spacing in the coarse microstructure in the boundary zone decreased with increasing growth rate but increased with increasing Ce concentration. We conclude that the colony structure is formed by cellular growth driven by constitutional supercooling with an interface instability due to Ce atom accumulation, so that the distance between boundary zones depends on both the growth rate and Ce concentration, and the coarse microstructure in the boundary zone depends on the solidification rate perpendicular to the growth interface at the cell bottom of the microscopic growth interface shape in the cellular growth.

  7. Dynamic atmospheres and winds of cool luminous giants. I. Al2O3 and silicate dust in the close vicinity of M-type AGB stars

    NASA Astrophysics Data System (ADS)

    Höfner, S.; Bladh, S.; Aringer, B.; Ahuja, R.

    2016-10-01

    Context. In recent years, high spatial resolution techniques have given valuable insights into the complex atmospheres of AGB stars and their wind-forming regions. They make it possible to trace the dynamics of molecular layers and shock waves, to estimate dust condensation distances, and to obtain information on the chemical composition and size of dust grains close to the star. These are essential constraints for understanding the mass loss mechanism, which presumably involves a combination of atmospheric levitation by pulsation-induced shock waves and radiation pressure on dust, forming in the cool upper layers of the atmospheres. Aims: Spectro-interferometric observations indicate that Al2O3 condenses at distances of about 2 stellar radii or less, prior to the formation of silicates. Al2O3 grains are therefore prime candidates for producing the scattered light observed in the close vicinity of several M-type AGB stars, and they may be seed particles for the condensation of silicates at lower temperatures. The purpose of this paper is to study the necessary conditions for the formation of Al2O3 and the potential effects on mass loss, using detailed atmosphere and wind models. Methods: We have constructed a new generation of Dynamic Atmosphere and Radiation-driven Wind models based on Implicit Numerics (DARWIN), including a time-dependent treatment of grain growth and evaporation for both Al2O3 and Fe-free silicates (Mg2SiO4). The equations describing these dust species are solved in the framework of a frequency-dependent radiation-hydrodynamical model for the atmosphere and wind structure, taking pulsation-induced shock waves and periodic luminosity variations into account. Results: Condensation of Al2O3 at the close distances and in the high concentrations implied by observations requires high transparency of the grains in the visual and near-IR region to avoid destruction by radiative heating. We derive an upper limit for the imaginary part of the refractive

  8. The coordination chemistry of weathering: I. Dissolution kinetics of δ- Al2O3 and BeO

    NASA Astrophysics Data System (ADS)

    Furrer, Gerhard; Stumm, Werner

    1986-09-01

    The dissolution kinetics of most slightly soluble oxides and silicates are controlled by chemical processes at the surface. The reaction controlling steps can be interpreted in terms of a surface coordination model. In dilute acid solutions, in the absence of complex-forming ligands, the dissolution kinetics are controlled by the surface bound protons. The rate of the proton-promoted reaction of δ- Al2O3 is RH = kH( CH3) 3 where C h3 is the proton concentration per unit area on the oxide surface. The mechanism can be described by the attachment of three protons to the reaction site prior to the detachment of an Al species into the solution. The dissolution rate of BeO is proportional to (C H2) 2. For δ- Al2O3 at pH ⩽ 3.5 dissolution rate is independent of pH; at this pH maximum surface concentration of protons is reached. The organic ligand-promoted dissolution, RL, is of first order with respect to concentration of surface chelates: R L = k L{M ?L} where {M ?L} is the concentration of surface chelates per unit area. Detachable surface complexes result from surface coordination of metal ions of the hydrous oxides with bidentate ligands. Especially efficient are bidentate ligands that form mononuclear surface complexes. The sequence of rate constants shows that five- and six-membered chelate rings (oxalate, catechol, malonate and salicylate) enhance the dissolution reactions to a greater extent than seven-membered rings (phthalate, succinate). Monodentate ligands (benzoate ion), though readily adsorbed, do not enhance dissolution rates. However, they can inhibit dissolution by displacing ligands that catalyze this reaction.

  9. Enhanced Dielectric Properties and High-Temperature Microwave Absorption Performance of Zn-Doped Al2O3 Ceramic

    NASA Astrophysics Data System (ADS)

    Wang, Yuan; Luo, Fa; Wei, Ping; Zhou, Wancheng; Zhu, Dongmei

    2015-07-01

    To improve the dielectric and microwave absorption properties of Al2O3 ceramic, Zn-doped Al2O3 ceramic was prepared by conventional ceramic processing. X-ray diffraction analysis confirmed that Zn atoms successfully entered the Al2O3 ceramic lattice and occupied Al sites. The complex permittivity increased with increasing Zn concentration, which is mainly attributed to the increase in charged vacancy defects and densification of the Al2O3 ceramic. In addition, the temperature-dependent complex permittivity of 3% Zn-doped Al2O3 ceramic was determined in the temperature range from 298 K to 873 K. Both the real and imaginary parts of the complex permittivity increased monotonically with increasing temperature, which can be ascribed to the shortened relaxation time and increasing electrical conductivity. The increased complex permittivity leads to a great improvement in microwave absorption. In particular, when the temperature is up to 873 K, the 3% Zn-doped Al2O3 ceramic exhibited the best absorption performance with a maximum peak (-12.1 dB) and broad effective absorption bandwidth (reflection loss less than -10 dB from 9.3 GHz to 12.3 GHz). These results reveal that Zn-doped Al2O3 ceramic is a promising candidate for use as a kind of high-temperature microwave absorption material.

  10. Comparative study of the effect of water on the heterogeneous reactions of carbonyl sulfide on the surface of α-Al2O3 and MgO

    NASA Astrophysics Data System (ADS)

    Liu, Y.; Ma, Q.; He, H.

    2009-05-01

    The heterogeneous reaction on mineral dust was considered as a new sink of OCS in the troposphere. Here we compared the heterogeneous reactions of carbonyl sulfide (OCS) on the surface of α-Al2O3 and MgO and the effect of water on the reactions at 300 K using Knudsen cell - mass spectrometry, diffuse reflectance infrared Fourier transform spectroscopy, and temperature programmed reactions. H2S and CO2 were found to be hydrolysis products of OCS on both α-Al2O3 and MgO at ambient temperature. At low water vapor pressure, when water vapor pressure in the Knudsen cell reactor increased from 2.3×10-6 to 6.8×10-6 Torr, the initial true uptake coefficient of OCS on α-Al2O3 decreased from 4.70×10-7 to 3.59×10-7; while it increased from 5.19×10-7 to 6.48×10-7 on MgO under the same conditions. At high relative humidity, the observed uptake coefficients of OCS on α-Al2O3 and MgO decreased from 4.63×10-6 to 1.00×10-6 and from 9.72×10-5 to 7.68×10-5, respectively, when RH increased from 0.07 to 0.67 which corresponding to 1.7-15.9 Torr of water vapor pressure. In the RH region of 0.17-0.67, the average observed uptake coefficient of OCS on α-Al2O3 and MgO was equal to 8.34±2.19×10-7 and 8.19±0.48×10-5, respectively. The restrictive effect of water on the heterogeneous reaction of OCS on the surface of α-Al2O3 and MgO was found to be related to competitive adsorption between water and OCS molecules; while the promotive effect of water on the heterogeneous reaction of OCS on the surface of MgO at low coverage was ascribed to the formation of surface hydroxyl groups. When the environmental RH was greater than the RH of the monolayer, which occurred readily at the typical relative humidity of the troposphere, liquid membrane formed on the mineral dusts, especially, the basic liquid membrane formed on the basic component of mineral dusts may be the primary contributor to the heterogeneous hydrolysis of OCS in the troposphere.

  11. Cyclic Oxidation of FeCrAlY/Al2O3 Composites

    NASA Technical Reports Server (NTRS)

    Nesbitt, James A.; Draper, Susan L.; Barrett, Charles A.

    1999-01-01

    Three-ply FeCrAlY/Al2O3 composites and FeCrAlY matrix-only samples were cyclically oxidized at 1000 C and 1100 C for up to 1000 1-hr cycles. Fiber ends were exposed at the ends of the composite samples. Following cyclic oxidation, cracks running parallel to and perpendicular to the fibers were observed on the large surface of the composite. In addition, there was evidence of increased scale damage and spallation around the exposed fiber ends, particularly around the middle ply fibers. This damage was more pronounced at the higher temperature. The exposed fiber ends showed cracking between fibers in the outer plies, occasionally with Fe and Cr-rich oxides growing out of the cracks. Large gaps developed at the fiber/matrix interface around many of the fibers, especially those in the outer plies. Oxygen penetrated many of these gaps resulting in significant oxide formation at the fiber/matrix interface far within the composite sample. Around several fibers, the matrix was also internally oxidized showing Al2O3 precipitates in a radial band around the fibers. The results show that these composites have poor cyclic oxidation resistance due to the CTE mismatch and inadequate fiber/matrix bond strength at temperatures of 1000 C and above.

  12. Texture Analyses of Ti/Al2O3 Nanocomposite Produced Using Friction Stir Processing

    NASA Astrophysics Data System (ADS)

    Shafiei-Zarghani, Aziz; Kashani-Bozorg, Seyed Farshid; Gerlich, Adrian P.

    2016-11-01

    The texture evolution of Ti/Al2O3 nanocomposite fabricated using friction stir processing (FSP) was investigated at both macroscopic and microscopic levels employing X-ray diffraction and electron backscattering diffraction techniques. The developed textures were compared with ideal shear textures of hexagonal close-packed (hcp) structure, revealing that the fabricated nanocomposite is dominated by the P 1 hcp (fiber { 10bar{1}1} < 1bar{2}10rangle (and relatively weak B (fiber { 10bar{1}1} < bar{1}bar{1}23rangle ) textures. The analyses of macro- and microtextures showed that the presence of nanosized Al2O3 particles activated the pyramidal { 10bar{1}1} < bar{1}bar{1}23rangle slip system in addition to dominant { 10bar{1}0} < 1bar{2}10rangle prism, basal { {0002} }< 1bar{2}10rangle, and pyramidal { 10bar{1}1} < 1bar{2}10rangle slip systems which normally govern plastic deformation during FSP of commercially pure titanium alloy. Moreover, the presence of nanoparticles promoted the occurrence of continuous dynamic recrystallization as well as increasing the fraction of high-angle grain boundaries within the developed microstructure.

  13. Separation of Fine Al2O3 Inclusion from Liquid Steel with Super Gravity

    NASA Astrophysics Data System (ADS)

    Li, Chong; Gao, Jintao; Wang, Zhe; Guo, Zhancheng

    2017-01-01

    An innovative approach of super gravity was proposed to separate fine Al2O3 inclusions from liquid steel in this study. To investigate the removal behaviors of inclusions, the effects of different gravity coefficients and time on separating the inclusions were studied. The results show that a large amount of Al2O3 inclusions gathered at the top of the sample obtained by super gravity, whereas there were almost no inclusions appearing at the bottom. The volume fraction and number density of inclusions presented a gradient distribution along the direction of the super gravity, which became steeper with increasing gravity coefficient and separating time. As a result of the collision between inclusions, a large amount of inclusions aggregated and grew during the moving process, which further decreased the removal time. The experimental required removal time of inclusions is close to the theoretical values calculated by Stokes law under gravity coefficient G ≤ 80, t ≤ 15 minutes, and the small deviation may be because the inclusion particles are not truly spherical. Under the condition of gravity coefficient G = 80, t = 15 minutes, the total oxygen content at the bottom of the sample (position of 5 cm) is only 8.4 ppm, and the removal rate is up to 95.6 pct compared with that under normal gravity.

  14. Cold-Sprayed Ni-Al2O3 Coatings for Applications in Power Generation Industry

    NASA Astrophysics Data System (ADS)

    Sevillano, F.; Poza, P.; Múnez, C. J.; Vezzù, S.; Rech, S.; Trentin, A.

    2013-06-01

    Cermets coatings are extensively used in energy applications both because of their high wear resistance as required, for example, in components like gas turbine sealants, and because of their specific functionality as required in solar absorbers. So far, high-temperature thermal spraying and physical vapor deposition have traditionally been used to deposit this kind of coatings. In this study, Ni-Al2O3 coatings have been deposited using a Kinetic®3000 cold-spray system starting from Ni and Al2O3 powders blend; five blends have been prepared setting the alumina content in the feedstock to 10, 25, 50, 75, and 90 wt.%. The embedded alumina ranges between a few percent weight up to 16 and 31 wt.%, while the microhardness shows a deep increase from 175 Vickers in the case of pure Ni coatings up to 338 Vickers. The spray and coating growth mechanism have been discussed, with special attention to the fragmentation of the ceramic particles during the impact. Finally, the coating behavior at high temperature was analyzed by oxidation tests performed in air at 520 °C emphasizing a good oxidation resistance that could represent a very promising basis for application in power generation systems.

  15. Tribological performance of Graphene/Carbon nanotube hybrid reinforced Al2O3 composites

    PubMed Central

    Yazdani, Bahareh; Xu, Fang; Ahmad, Iftikhar; Hou, Xianghui; Xia, Yongde; Zhu, Yanqiu

    2015-01-01

    Tribological performance of the hot-pressed pure Al2O3 and its composites containing various hybrid contents of graphene nanoplatelets (GNPs) and carbon nanotubes (CNTs) were investigated under different loading conditions using the ball-on-disc method. Benchmarked against the pure Al2O3, the composite reinforced with a 0.5 wt% GNP exhibited a 23% reduction in the friction coefficient along with a promising 70% wear rate reduction, and a hybrid reinforcement consisting of 0.3 wt.% GNPs + 1 wt.% CNTs resulted in even better performance, with a 86% reduction in the wear rate. The extent of damage to the reinforcement phases caused during wear was studied using Raman spectroscopy. The wear mechanisms for the composites were analysed based on the mechanical properties, brittleness index and microstructural characterizations. The excellent coordination between GNPs and CNTs contributed to the excellent wear resistance property in the hybrid GNT-reinforced composites. GNPs played the important role in the formation of a tribofilm on the worn surface by exfoliation; whereas CNTs contributed to the improvement in fracture toughness and prevented the grains from being pulled out during the tribological test. PMID:26100097

  16. Fabrication of Al2O3-W Functionally Graded Materials by Slipcasting Method

    NASA Astrophysics Data System (ADS)

    Katayama, Tomoyuki; Sukenaga, Sohei; Saito, Noritaka; Kagata, Hajime; Nakashima, Kunihiko

    2011-10-01

    We have successfully fabricated a functionally graded material (FGM) from tungsten and alumina powders by a slip-casting method. This FGM has applications as a sealing and conducting component for high-intensity discharge lamps (HiDLs) that have a translucent alumina envelope. Two types of W powder, with different oxidizing properties, were used as the raw powders for the Al2O3-W FGM. "Oxidized W" was prepared by heat-treatment at 200 °C for 180 min in air. Alumina and each of the W powders were mixed in ultrapure water by ultrasonic stirring. The slurry was then cast into a cylindrical acrylic mold, which had a base of porous alumina, under controlled pressure. The green compacts were subsequently dried, and then sintered using a vacuum furnace at 1600 °C for a fixed time. The microstructures of the FGMs were observed by scanning electron microscopy (SEM) of the polished section. The Al2O3-W FGM with the "oxidized W" powder resulted in a microscopic compositional gradient. However, the FGM with "as-received W" showed no compositional gradient. This result was mainly attributed to the difference between the ζ-potentials of the W powders with the different oxidizing conditions; basically "oxidized W" powder tends to disperse because of the larger ζ-potential of the oxide layer coated on the W powder core.

  17. Separation of Fine Al2O3 Inclusion from Liquid Steel with Super Gravity

    NASA Astrophysics Data System (ADS)

    Li, Chong; Gao, Jintao; Wang, Zhe; Guo, Zhancheng

    2017-04-01

    An innovative approach of super gravity was proposed to separate fine Al2O3 inclusions from liquid steel in this study. To investigate the removal behaviors of inclusions, the effects of different gravity coefficients and time on separating the inclusions were studied. The results show that a large amount of Al2O3 inclusions gathered at the top of the sample obtained by super gravity, whereas there were almost no inclusions appearing at the bottom. The volume fraction and number density of inclusions presented a gradient distribution along the direction of the super gravity, which became steeper with increasing gravity coefficient and separating time. As a result of the collision between inclusions, a large amount of inclusions aggregated and grew during the moving process, which further decreased the removal time. The experimental required removal time of inclusions is close to the theoretical values calculated by Stokes law under gravity coefficient G ≤ 80, t ≤ 15 minutes, and the small deviation may be because the inclusion particles are not truly spherical. Under the condition of gravity coefficient G = 80, t = 15 minutes, the total oxygen content at the bottom of the sample (position of 5 cm) is only 8.4 ppm, and the removal rate is up to 95.6 pct compared with that under normal gravity.

  18. Sulfuric acid baking and leaching of spent Co-Mo/Al2O3 catalyst.

    PubMed

    Kim, Hong-In; Park, Kyung-Ho; Mishra, Devabrata

    2009-07-30

    Dissolution of metals from a pre-oxidized refinery plant spent Co-Mo/Al(2)O(3) catalyst have been tried through low temperature (200-450 degrees C) sulfuric acid baking followed by mild leaching process. Direct sulfuric acid leaching of the same sample, resulted poor Al and Mo recoveries, whereas leaching after sulfuric acid baking significantly improved the recoveries of above two metals. The pre-oxidized spent catalyst, obtained from a Korean refinery plant found to contain 40% Al, 9.92% Mo, 2.28% Co, 2.5% C and trace amount of other elements such as Fe, Ni, S and P. XRD results indicated the host matrix to be poorly crystalline gamma- Al(2)O(3). The effect of various baking parameters such as catalyst-to-acid ratio, baking temperature and baking time on percentage dissolutions of metals has been studied. It was observed that, metals dissolution increases with increase in the baking temperature up to 300 degrees C, then decreases with further increase in the baking temperature. Under optimum baking condition more than 90% Co and Mo, and 93% Al could be dissolved from the spent catalyst with the following leaching condition: H(2)SO(4)=2% (v/v), temperature=95 degrees C, time=60 min and Pulp density=5%.

  19. Revisiting the Al/Al2O3 Interface: Coherent Interfaces and Misfit Accommodation

    DOE PAGES

    Pilania, Ghanshyam; Thijsse, Barend J.; Hoagland, Richard G.; ...

    2014-03-27

    We report the coherent and semi-coherent Al/α-Al2O3 interfaces using molecular dynamics simulations with a mixed, metallic-ionic atomistic model. For the coherent interfaces, both Al-terminated and O-terminated nonstoichiometric interfaces have been studied and their relative stability has been established. To understand the misfit accommodation at the semi-coherent interface, a 1-dimensional (1D) misfit dislocation model and a 2-dimensional (2D) dislocation network model have been studied. For the latter case, our analysis reveals an interface dislocation structure with a network of three sets of parallel dislocations, each with pure-edge character, giving rise to a pattern of coherent and stacking-fault-like regions at the interface.more » Structural relaxation at elevated temperatures leads to a further change of the dislocation pattern, which can be understood in terms of a competition between the stacking fault energy and the dislocation interaction energy at the interface. In conclusion, our results are expected to serve as an input for the subsequent dislocation dynamics models to understand and predict the macroscopic mechanical behavior of Al/α-Al2O3 composite heterostructures.« less

  20. Electrodeposition of Ni-Al2O3 nano composite coating and evaluation of wear characteristics

    NASA Astrophysics Data System (ADS)

    Raghavendra, C. R.; Basavarajappa, S.; Sogalad, Irappa

    2016-09-01

    Electrodeposition is one of the most technologically feasible and economically superior technique for producing metallic coating. The advancement in the application of nano particles has grabbed the attention in all fields of engineering. In this present study an attempt has been made on the nano particle composite coating on aluminium substrate by electrodeposition process. The aluminium surface requires a specific pre-treatment for better adherence of coating. In light of this a thin zinc layer is coated on the aluminium substrate by electroless process. This layer offers protection against oxidation thus prevents the formation of a native oxide layer. In this work Ni-Al2O3 composite coating were successfully coated by varying the process parameters such as bath temperature, current density and particle loading. The experimentation was performed using central composite design based 20 trials of experiments. The effect of process parameters on surface morphology and wear behavior was studied. The results shown a better wear resistance of Ni-Al2O3 composite electrodeposited coating compared to Ni coating. The particle loading and interaction effect of current density with temperature has greater significant effect on wear rate followed by the bath temperature. The decrease in wear rate was observed with the increased current density and temperature.

  1. Revisiting the Al/Al2O3 Interface: Coherent Interfaces and Misfit Accommodation

    PubMed Central

    Pilania, Ghanshyam; Thijsse, Barend J.; Hoagland, Richard G.; Lazić, Ivan; Valone, Steven M.; Liu, Xiang-Yang

    2014-01-01

    We study the coherent and semi-coherent Al/α-Al2O3 interfaces using molecular dynamics simulations with a mixed, metallic-ionic atomistic model. For the coherent interfaces, both Al-terminated and O-terminated nonstoichiometric interfaces have been studied and their relative stability has been established. To understand the misfit accommodation at the semi-coherent interface, a 1-dimensional (1D) misfit dislocation model and a 2-dimensional (2D) dislocation network model have been studied. For the latter case, our analysis reveals an interface dislocation structure with a network of three sets of parallel dislocations, each with pure-edge character, giving rise to a pattern of coherent and stacking-fault-like regions at the interface. Structural relaxation at elevated temperatures leads to a further change of the dislocation pattern, which can be understood in terms of a competition between the stacking fault energy and the dislocation interaction energy at the interface. Our results are expected to serve as an input for the subsequent dislocation dynamics models to understand and predict the macroscopic mechanical behavior of Al/α-Al2O3 composite heterostructures. PMID:24670940

  2. Cooling Rate Effects on Dynamics in Supercooled Al2O3

    NASA Astrophysics Data System (ADS)

    Hoang, Vo Van; Oh, Suhk Kun

    The cooling rate effects in supercooled Al2O3 have been investigated by Molecular Dynamics (MD) method. Simulations were done in the basic cube under periodic boundary conditions containing 3000 ions with Born-Mayer type pair potentials. The temperature of the system was decreased linearly in time as T(t)=T0-γt, where γ is the cooling rate. The cooling rate dependence of density, thermal expansion coefficient and enthalpy of the system was found. Structure of amorphous Al2O3 model at the temperature of 0 K was in good agreement with Lamparter's experimental data. The cooling rate dependence of the dynamical heterogeneities in supercooled states has been studied through the comparison of the partial radial distribution functions (PRDFs) for the 10% most mobile or immobile particles with the corresponding mean PRDFs in the models. Also, cooling rate effects on the cluster size distributions of the most mobile or immobile particles have been obtained. Calculations show that the cooling rate effects on the dynamical heterogeneities are pronounced. Finally, the evolution of structural defects and cluster size distributions of the most mobile or immobile particles in the system upon cooling has been studied and presented.

  3. Structure and magnetism of granular Fe-Al 2O 3

    NASA Astrophysics Data System (ADS)

    Santos, A.; Ardisson, J. D.; Viegas, A. D. C.; Schmidt, J. E.; Persiano, A. I. C.; Macedo, W. A. A.

    2001-05-01

    The structural and magnetic properties of granular Fe-Al 2O 3 nanocomposite obtained starting from sol-gel processing are presented. Samples with nominal Fe content ranging from 20% to 62% in volume were prepared. The conversion of Fe oxides into metallic Fe was obtained by calcination at 800°C followed by reduction at 600°C for 2 h in H 2 atmosphere. After reduction, our results indicated up to 78% α-Fe, preserving the mean diameter of the metallic nanoparticles between 50 and 80 nm, ˜16% Fe oxides and ˜7% interstitial Fe 2+ and substitutional Fe 3+ cations in the Al 2O 3 lattice. Vibrating sample magnetometry at 300 K resulted in coercivity between 400 and 630 Oe and saturation magnetization between 40 and 134 emu/g. From transport measurements, the highest magnetoresistance, close to 2% at room temperature, was observed for samples with 25% α-Fe and 51 vol% total Fe.

  4. DNA Sensing using Nano-crystalline Surface Enhanced Al2O3 Nanopore Sensors

    PubMed Central

    Venkatesan, B. M.; Shah, A.B.; Zuo, J.M.; Bashir, R.

    2013-01-01

    A new solid-state, Al2O3 nanopore sensor with enhanced surface properties for the real-time detection and analysis of individual DNA molecules is reported. Nanopore formation using electron beam based decomposition transformed the local nanostructure and morphology of the pore from an amorphous, stoichiometric structure (O to Al ratio of 1.5) to a hetero-phase crystalline network, deficient in O (O to Al ratio of ~0.6). Direct metallization of the pore region was observed during irradiation, thereby permitting the potential fabrication of nano-scale metallic contacts in the pore region with potential application to nanopore-based DNA sequencing. Dose dependent phase transformations to purely γ and/or α-phase nanocrystallites were also observed during pore formation allowing for surface charge engineering at the nanopore/fluid interface. DNA transport studies revealed an order of magnitude reduction in translocation velocities relative to alternate solid-state architectures, accredited to high surface charge density and the nucleation of charged nanocrystalline domains. The unique surface properties of Al2O3 nanopore sensors makes them ideal for the detection and analysis of ssDNA, dsDNA, RNA secondary structures and small proteins. These nano-scale sensors may also serve as a useful tool in studying the mechanisms driving biological processes including DNA-protein interactions and enzyme activity at the single molecule level. PMID:23335871

  5. Activation energy of negative fixed charges in thermal ALD Al2O3

    NASA Astrophysics Data System (ADS)

    Kühnhold-Pospischil, S.; Saint-Cast, P.; Richter, A.; Hofmann, M.

    2016-08-01

    A study of the thermally activated negative fixed charges Qtot and the interface trap densities Dit at the interface between Si and thermal atomic-layer-deposited amorphous Al2O3 layers is presented. The thermal activation of Qtot and Dit was conducted at annealing temperatures between 220 °C and 500 °C for durations between 3 s and 38 h. The temperature-induced differences in Qtot and Dit were measured using the characterization method called corona oxide characterization of semiconductors. Their time dependency were fitted using stretched exponential functions, yielding activation energies of EA = (2.2 ± 0.2) eV and EA = (2.3 ± 0.7) eV for Qtot and Dit, respectively. For annealing temperatures from 350 °C to 500 °C, the changes in Qtot and Dit were similar for both p- and n-type doped Si samples. In contrast, at 220 °C the charging process was enhanced for p-type samples. Based on the observations described in this contribution, a charging model leading to Qtot based on an electron hopping process between the silicon and Al2O3 through defects is proposed.

  6. Effect of interface geometry on electron tunnelling in Al/Al2O3/Al junctions

    NASA Astrophysics Data System (ADS)

    Koberidze, M.; Feshchenko, A. V.; Puska, M. J.; Nieminen, R. M.; Pekola, J. P.

    2016-04-01

    We investigate how different interface geometries of an Al/Al2O3 junction, a common component of modern tunnel devices, affect electron transport through the tunnel barrier. We study six distinct Al/Al2O3 interfaces which differ in stacking sequences of the metal and the oxide surface atoms and the oxide termination. To construct model potential barrier profiles for each examined geometry, we rely on first-principles density-functional theory (DFT) calculations for the barrier heights and the shapes of the interface regions as well as on experimental data for the barrier widths. We show that even tiny variations in the atomic arrangement at the interface cause significant changes in the tunnel barrier parameters and, consequently, in electron transport properties. Especially, we find that variations in the crucial barrier heights and widths can be as large as 2 eV and 5 Å, respectively. Finally, to gain information about the average properties of the measured junction, we fit the conductance calculated within the Wentzel-Kramers-Brillouin approximation to the experimental data and interpret the fit parameters with the help of the DFT results.

  7. Structural properties of Y2O3–Al2O3 liquids and glasses: An overview

    SciTech Connect

    Wilding, Martin C.; Wilson, Mark; McMillan, Paul F.; Benmore, Chris J.; Weber, J. K.R.; Deschamps, Thierry; Champagnon, Bernard

    2015-01-01

    Liquids in the system Y2O3- Al2O3 have been the subject of considerable study because of the reported occurrence of a first-order density and entropy-driven liquid-liquid phase transition (LLPT) in the supercooled liquid state. The observations have become controversial because of the presence of crystalline material that can be formed simultaneously and that can mask the nucleation and growth of the lower density liquid. The previous work is summarized here along with arguments for and against the different viewpoints. Also two studies have been undertaken to investigate the LLPT in this refractory system with emphasis on determining the structure of unequivocally amorphous materials. These include the in situ high energy X-ray diffraction (HEXRD) of supercooled Y2O3 - Al2O3 liquids and the low frequency vibrational dynamics of recovered glasses. Manybody molecular dynamics simulations are also used to interpret the results of both studies. The HEXRD measurements, combined with aerodynamic levitation and rapid data acquisition techniques, show that for the 20 mol% Y2O3 (i.e. AlY20) liquid there is a shift in the position of the first peak in the diffraction pattern over a narrow temperature range (2100-1800 K) prior to crystallization. Microbeam Raman spectroscopy measurements made on AlY20 glasses clearly show contrasting spectra in the low frequency part of the spectrum for low(LDA) and high-density (HDA) glassy regions. The molecular dynamics simulations identify contrasting coordination environments around oxygen anions for the high- (HDL) and low-density (LDL) liquids. (C) 2014 Elsevier B.V. All rights reserved.

  8. Preferential CO oxidation on Ru/Al 2O 3 catalyst: An investigation by considering the simultaneously involved methanation

    NASA Astrophysics Data System (ADS)

    Xu, Guangwen; Zhang, Zhan-Guo

    The CO removal with preferential CO oxidation (PROX) over an industrial 0.5% Ru/Al 2O 3 catalyst from simulated reformates was examined and evaluated through considering its simultaneously involved oxidation and methanation reactions. It was found that the CO removal was fully due to the preferential oxidation of CO until 383 K. Over this temperature, the simultaneous CO methanation was started to make a contribution, which compensated for the decrease in the removal due to the decreased selectivity of PROX at higher temperatures. This consequently kept the effluent CO content as well as the overall selectivity estimated as the ratio of the removed CO amount over the sum of the consumed O 2 and formed CH 4 amounts from apparently increasing with raising reaction temperature from 383 to 443 K when the CO 2 methanation was yet not fully started. At these temperatures the tested catalyst enabled the initial CO content of up to 1.0 vol.% to be removed to several tens of ppm at an overall selectivity of about 0.4 from simulated reformates containing 70 vol.% H 2, 30 vol.% CO 2 and with steam of up to 0.45 (volume) of dry gas. Varying space velocity in less than 9000 h -1 did not much change the stated overall selectivity. From the viewpoint of CO removal the article thus concluded that the methanation activity of the tested Ru/Al 2O 3 greatly extended its working temperatures for PROX, demonstrating actually a feasible way to formulate PROX catalysts that enable broad windows of suitable working temperatures.

  9. Photochromism of vacancy-related defects in thermochemically reduced α-Al2O3:Mg single crystals

    NASA Astrophysics Data System (ADS)

    Ramírez, R.; Tardío, M.; González, R.; Chen, Y.; Kokta, M. R.

    2005-02-01

    Oxygen vacancies and their aggregates are produced much more readily in Mg-doped α-Al2O3 than in undoped α-Al2O3 single crystals during thermochemical reduction at high temperatures. A reversible photochromic effect was discovered in Mg-doped Al2O3 crystals containing large concentrations of oxygen divacancies. Alternate excitation with 5.0 and 3.69 eV light results in brown or yellowish-green coloration, respectively. The yellowish-green coloration can also be restored by thermal anneals at temperatures of about 750 K.

  10. The effect of particle size on the electrical conductivity of CuCl (Al2O3) composites

    NASA Technical Reports Server (NTRS)

    Chang, M. R.-W.; Shahi, K.; Wagner, J. B., Jr.

    1984-01-01

    The conductivity of CuCl containing Al2O3 of 0.06, 0.3, 1, 3, 8, and 15 micron sized particles was measured between 25 and 390 C. Conductivity was enhanced for the 0.06 and 0.3 sized Al2O3 particles for temperatures below approximately 250 C. The maximum enhancement occurred at 10 m/o of 0.06 micron Al2O3 at 25 C. Uncertain degrees of agglomeration as well as the grain size of the matrix were found to be significant.

  11. Microstructural and Tribological Properties of Al2O3-13pctTiO2 Thermal Spray Coatings Deposited by Flame Spraying

    NASA Astrophysics Data System (ADS)

    Younes, Rassim; Bradai, Mohand Amokrane; Sadeddine, Abdelhamid; Mouadji, Youcef; Bilek, Ali; Benabbas, Abderrahim

    2015-10-01

    T He present investigation has been conducted to study the tribological properties of Al2O3-13pctTiO2 (AT-13) ceramic coatings deposited on a low carbon steel type E335 by using a thermal flame spray technique. The microstructure and phase composition of wire and coatings were analyzed by scanning electron microscope, energy dispersive spectroscopy (EDS), and X-ray diffraction (XRD). Measurements of micro hardness were also performed on the surface of the coatings. The tribological tests were carried out using a pin-on-disk tribometer at different loads. All tests were performed using two disks as counter body, namely Al2O3-ZrO2 (AZ-25) and Al2O3-TiO2 (AT-3) which formed couple 1 and couple 2, respectively, in order to work out the wear rate and friction coefficient. Roughness profiles were also evaluated before and after each test. The SEM showed that the dense microstructure of Al2O3-TiO2 (AT-13) coatings have a homogenous lamellar morphology and complex of several phases with the presence of porosities and unmelted particles. The XRD analysis of the wire before the spray showed a majority phase of α-Al2O3 rhombohedral structure and a secondary phase of Al2TiO5 orthorhombic structure with little traces of TiO2 (rutile) tetragonal structure, whereas the XRD of the coating revealed the disappearance of TiO2 replaced by the formation of a new metastable phase γ-Al2O3 cubic structure. The tribological results showed that the applied contact pressure affects the variation of the friction coefficient with time and that it decreases with the rise of the normal force of contact. It was found also that the couple 2 with nearly chemical compositions of spray-coated (AT-13) and disk (AT-3) exhibited much higher wear resistance than the couple 1 although they have sliding coefficient of friction nearly.

  12. Interactions in Ternary Mixtures of MnO2, Al2O3, and Natural Organic Matter (NOM) and the Impact on MnO2 Oxidative Reactivity.

    PubMed</