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Sample records for al2o3 gate dielectrics

  1. Electrical Double Layer Capacitance in a Graphene-embedded Al2O3 Gate Dielectric

    PubMed Central

    Ki Min, Bok; Kim, Seong K.; Jun Kim, Seong; Ho Kim, Sung; Kang, Min-A; Park, Chong-Yun; Song, Wooseok; Myung, Sung; Lim, Jongsun; An, Ki-Seok

    2015-01-01

    Graphene heterostructures are of considerable interest as a new class of electronic devices with exceptional performance in a broad range of applications has been realized. Here, we propose a graphene-embedded Al2O3 gate dielectric with a relatively high dielectric constant of 15.5, which is about 2 times that of Al2O3, having a low leakage current with insertion of tri-layer graphene. In this system, the enhanced capacitance of the hybrid structure can be understood by the formation of a space charge layer at the graphene/Al2O3 interface. The electrical properties of the interface can be further explained by the electrical double layer (EDL) model dominated by the diffuse layer. PMID:26530817

  2. Solution-processed Al2O3 gate dielectrics for graphene field-effect transistors

    NASA Astrophysics Data System (ADS)

    Park, Goon-Ho; Kim, Kwan-Soo; Fukidome, Hirokazu; Suemitsu, Tetsuya; Otsuji, Taiichi; Cho, Won-Ju; Suemitsu, Maki

    2016-09-01

    The performance of actual graphene FETs suffers significant degradation from that expected for pristine graphene, which can be partly attributed to the onset of defects and the doping of the graphene induced during the fabrication of gate dielectric layers. These effects are mainly due to high-temperature processes such as postdeposition annealing. Here, we propose a novel low-temperature method for the fabrication of gate dielectrics, which consists of the natural oxidation of an ultrathin Al layer and a sol–gel process with oxygen plasma treatment to form an Al2O3 layer. The method results in a significant reduction of defects and doping in graphene, and devices fabricated by this method show an intrinsic carrier mobility as high as 9100 cm2 V‑1 s‑1.

  3. PEDOT gate electrodes with PVP/Al2O3 dielectrics for stable high-performance organic TFTs

    NASA Astrophysics Data System (ADS)

    Lee, Young Kyu; Maniruzzaman, Md.; Lee, Chiyoung; Lee, Mi Jung; Lee, Eun-Gu; Lee, Jaegab

    2013-11-01

    A poly(3,4-ethylenedioxythiophene) (PEDOT) gate electrode on a polyestersulfone (PES) substrate was used to fabricate inverted staggered pentacene organic thin film transistors (OTFTs). The PEDOT gate formed on the PES substrate exhibited semi-transparency, high conductivity, and excellent adhesion to the substrate. Prior to the deposition of poly-4-vinyl phenol (PVP) dielectrics, a thin Al2O3 layer (12 nm) was coated onto a PEDOT electrode, providing an effective barrier against inter-diffusion between the PVP dielectrics and the underlying PEDOT gate electrode, and against moisture penetration through the PES substrate. This led to stable high-performance OTFTs consisting of a PEDOT gate electrode and PVP/Al2O3 dielectrics. The combined PVP/Al2O3 dielectrics with PEDOT gate electrodes were successfully implemented in flexible organic TFTs that exhibit excellent compatibility with flexible electronics.

  4. Electrical performance of Al2O3 gate dielectric films deposited by atomic layer deposition on 4H-SiC

    NASA Astrophysics Data System (ADS)

    Tanner, Carey M.; Perng, Ya-Chuan; Frewin, Christopher; Saddow, Stephen E.; Chang, Jane P.

    2007-11-01

    Stoichiometric and pure Al2O3 gate dielectric films were grown on n-type 4H-SiC by a thermal atomic layer deposition process. The electrical properties of both amorphous and epitaxial Al2O3 films were studied by capacitance-voltage and current-voltage measurements of metal-oxide-semiconductor capacitors. A dielectric constant of 9 and a flatband voltage shift of +1.3V were determined. A leakage current density of 10-3A/cm2 at 8MV/cm was obtained for the amorphous Al2O3 films, lower than that of any high-κ gate oxide on 4H-SiC reported to date. A Fowler-Nordheim tunneling mechanism was used to determine an Al2O3/4H-SiC barrier height of 1.58eV. Higher leakage current was obtained for the epitaxial γ-Al2O3 films, likely due to grain boundary conduction.

  5. ALD TiO2-Al2O3 Stack: An Improved Gate Dielectrics on Ga-polar GaN MOSCAPs

    DOE PAGES

    Wei, Daming; Edgar, James H.; Briggs, Dayrl P.; Srijanto, Bernadeta R.; Retterer, Scott T.; Meyer, III, Harry M.

    2014-10-15

    This research focuses on the benefits and properties of TiO2-Al2O3 nano-stack thin films deposited on Ga2O3/GaN by plasma-assisted atomic layer deposition (PA-ALD) for gate dielectric development. This combination of materials achieved a high dielectric constant, a low leakage current, and a low interface trap density. Correlations were sought between the films’ structure, composition, and electrical properties. The gate dielectrics were approximately 15 nm thick and contained 5.1 nm TiO2, 7.1 nm Al2O3 and 2 nm Ga2O3 as determined by spectroscopic ellipsometry. The interface carbon concentration, as measured by x-ray photoelectron spectroscopy (XPS) depth profile, was negligible for GaN pretreated bymore » thermal oxidation in O2 for 30 minutes at 850°C. The RMS roughness slightly increased after thermal oxidation and remained the same after ALD of the nano-stack, as determined by atomic force microscopy. The dielectric constant of TiO2-Al2O3 on Ga2O3/GaN was increased to 12.5 compared to that of pure Al2O3 (8~9) on GaN. In addition, the nano-stack's capacitance-voltage (C-V) hysteresis was small, with a total trap density of 8.74 × 1011 cm-2. The gate leakage current density (J=2.81× 10-8 A/cm2) was low at +1 V gate bias. These results demonstrate the promising potential of plasma ALD deposited TiO2/Al2O3 for serving as the gate oxide on Ga2O3/GaN based MOS devices.« less

  6. Tri-gate InGaAs-OI junctionless FETs with PE-ALD Al2O3 gate dielectric and H2/Ar anneal

    NASA Astrophysics Data System (ADS)

    Djara, Vladimir; Czornomaz, Lukas; Deshpande, Veeresh; Daix, Nicolas; Uccelli, Emanuele; Caimi, Daniele; Sousa, Marilyne; Fompeyrine, Jean

    2016-01-01

    We present a tri-gate In0.53Ga0.47As-on-insulator (InGaAs-OI) junctionless field-effect transistor (JLFET) architecture. The fabricated devices feature a 20-nm-thick n-In0.53Ga0.47As channel doped to 1018/cm3 obtained by metal organic chemical vapor phase deposition and direct wafer bonding along with a 3.5-nm-thick Al2O3 gate dielectric deposited by plasma-enhanced atomic layer deposition (PE-ALD). The PE-ALD Al2O3 presents a bandgap of 7.0 eV, a k-value of 8.1 and a breakdown field of 8-10.5 MV/cm. A post-fabrication H2/Ar anneal applied to the PE-ALD Al2O3/In0.53Ga0.47As-OI gate stack yielded a low density of interface traps (Dit) of 7 × 1011/cm2 eV at Ec - E = -0.1 eV along with lower border trap density values than recently reported PE-ALD bi-layer Al2O3/HfO2 and thermal ALD HfO2 gate stacks deposited on In0.53Ga0.47As. The H2/Ar anneal also improved the subthreshold performance of the tri-gate InGaAs-OI JLFETs. After H2/Ar anneal, the long-channel (10 μm) device featured a threshold voltage (VT) of 0.25 V, a subthreshold swing (SS) of 88 mV/dec and a drain-induced barrier lowering (DIBL) of 65 mV/V, while the short-channel (160 nm) device exhibited a VT of 0.1 V, a SS of 127 mV/dec and a DIBL of 218 mV/V. Overall, the tri-gate InGaAs-OI JLFETs showed the best compromise in terms of VT, SS and DIBL compared to the other III-V JLFET architectures reported to date. However, a 15× increase in access resistance was observed after H2/Ar anneal, significantly degrading the maximum drain current of the tri-gate InGaAs-OI JLFETs.

  7. Fast and slow transient charging in various III-V field-effect transistors with atomic-layer-deposited-Al2O3 gate dielectric

    NASA Astrophysics Data System (ADS)

    Ramón, Michael E.; Akyol, Tarik; Shahrjerdi, Davood; Young, Chadwin D.; Cheng, Julian; Register, Leonard F.; Banerjee, Sanjay K.

    2013-01-01

    We report measurement of fast transient charging effects (FTCE) in enhancement-mode n-channel GaAs, InP, and In0.53Ga0.47As field-effect transistors (FETs) using Al2O3 as the gate dielectric. The FTCE data reveal superior drive current and enhanced threshold voltage stability for In0.53Ga0.47As FETs. We further report charge pumping measurements for In0.53Ga0.47As transistors, revealing that the majority of interface traps are donor traps, as well as an increased trap density within the Al2O3 bulk. Such data, together with FTCE data, reveal that drain current degradation observed during pulsed I-V measurements is predominantly due to slow oxide traps, underscoring their significance within III-V/high-κ metal-oxide-semiconductor FETs.

  8. Radiation-induced charge trapping in thin Al2O3/SiOxNy/Si(100) gate dielectric stacks.

    SciTech Connect

    D'Emic, Chris; Gusev, Evgeni P.; Schrimpf, Ronald D.; Fleetwood, Daniel M.; Schwank, James Ralph; Felix, James Andrew; Shaneyfelt, Marty Ray; Dodd, Paul Emerson; Meisenheimer, Timothy Lee

    2003-07-01

    We examine the total-dose radiation response of capacitors and transistors with stacked Al{sub 2}O{sub 3} on oxynitride gate dielectrics with Al and poly-Si gates after irradiation with 10 keV X-rays. The midgap voltage shift increases monotonically with dose and depends strongly on both Al{sub 2}O{sub 3} and SiO{sub x}N{sub y} thickness. The thinnest dielectrics, of most interest to industry, are extremely hard to ionizing irradiation, exhibiting only {approx}50 mV of shift at a total dose of 10 Mrad(SiO{sub 2}) for the worst case bias condition. Oxygen anneals are found to improve the total dose radiation response by {approx}50% and induce a small amount of capacitance-voltage hysteresis. Al{sub 2}O{sub 3}/SiO{sub x}N{sub y} dielectrics which receive a {approx}1000 C dopant activation anneal trap {approx}12% more of the initial charge than films annealed at 550 C. Charge pumping measurements show that the interface trap density decreases with dose up to 500 krad(SiO{sub 2}). This surprising result is discussed with respect to hydrogen effects in alternative dielectric materials, and may be the result of radiation-induced hydrogen passivation of some of the near-interfacial defects in these gate dielectrics.

  9. Remote interfacial dipole scattering and electron mobility degradation in Ge field-effect transistors with GeO x /Al2O3 gate dielectrics

    NASA Astrophysics Data System (ADS)

    Wang, Xiaolei; Xiang, Jinjuan; Wang, Shengkai; Wang, Wenwu; Zhao, Chao; Ye, Tianchun; Xiong, Yuhua; Zhang, Jing

    2016-06-01

    Remote Coulomb scattering (RCS) on electron mobility degradation is investigated experimentally in Ge-based metal–oxide–semiconductor field-effect-transistors (MOSFETs) with GeO x /Al2O3 gate stacks. It is found that the mobility increases with greater GeO x thickness (7.8–20.8 Å). The physical origin of this mobility dependence on GeO x thickness is explored. The following factors are excluded: Coulomb scattering due to interfacial traps at GeO x /Ge, phonon scattering, and surface roughness scattering. Therefore, the RCS from charges in gate stacks is studied. The charge distributions in GeO x /Al2O3 gate stacks are evaluated experimentally. The bulk charges in Al2O3 and GeO x are found to be negligible. The density of the interfacial charge is  +3.2  ×  1012 cm‑2 at the GeO x /Ge interface and  ‑2.3  ×  1012 cm‑2 at the Al2O3/GeO x interface. The electric dipole at the Al2O3/GeO x interface is found to be  +0.15 V, which corresponds to an areal charge density of 1.9  ×  1013 cm‑2. The origin of this mobility dependence on GeO x thickness is attributed to the RCS due to the electric dipole at the Al2O3/GeO x interface. This remote dipole scattering is found to play a significant role in mobility degradation. The discovery of this new scattering mechanism indicates that the engineering of the Al2O3/GeO x interface is key for mobility enhancement and device performance improvement. These results are helpful for understanding and engineering Ge mobility enhancement.

  10. Oxide Charge Engineering of Atomic Layer Deposited AlOxNy/Al2O3 Gate Dielectrics: A Path to Enhancement Mode GaN Devices.

    PubMed

    Negara, M A; Kitano, M; Long, R D; McIntyre, P C

    2016-08-17

    Nitrogen incorporation to produce negative fixed charge in Al2O3 gate insulator layers is investigated as a path to achieve enhancement mode GaN device operation. A uniform distribution of nitrogen across the resulting AlOxNy films is obtained using N2 plasma enhanced atomic layer deposition (ALD). The flat band voltage (Vfb) increases to a significantly more positive value with increasing nitrogen concentration. Insertion of a 2 nm thick Al2O3 interlayer greatly decreases the trap density of the insulator/GaN interface, and reduces the voltage hysteresis and frequency dispersion of gate capacitance compared to single-layer AlOxNy gate insulators in GaN MOSCAPs.

  11. Oxide Charge Engineering of Atomic Layer Deposited AlOxNy/Al2O3 Gate Dielectrics: A Path to Enhancement Mode GaN Devices.

    PubMed

    Negara, M A; Kitano, M; Long, R D; McIntyre, P C

    2016-08-17

    Nitrogen incorporation to produce negative fixed charge in Al2O3 gate insulator layers is investigated as a path to achieve enhancement mode GaN device operation. A uniform distribution of nitrogen across the resulting AlOxNy films is obtained using N2 plasma enhanced atomic layer deposition (ALD). The flat band voltage (Vfb) increases to a significantly more positive value with increasing nitrogen concentration. Insertion of a 2 nm thick Al2O3 interlayer greatly decreases the trap density of the insulator/GaN interface, and reduces the voltage hysteresis and frequency dispersion of gate capacitance compared to single-layer AlOxNy gate insulators in GaN MOSCAPs. PMID:27459343

  12. O3-sourced atomic layer deposition of high quality Al2O3 gate dielectric for normally-off GaN metal-insulator-semiconductor high-electron-mobility transistors

    NASA Astrophysics Data System (ADS)

    Huang, Sen; Liu, Xinyu; Wei, Ke; Liu, Guoguo; Wang, Xinhua; Sun, Bing; Yang, Xuelin; Shen, Bo; Liu, Cheng; Liu, Shenghou; Hua, Mengyuan; Yang, Shu; Chen, Kevin J.

    2015-01-01

    High quality Al2O3 film grown by atomic layer deposition (ALD), with ozone (O3) as oxygen source, is demonstrated for fabrication of normally-off AlGaN/GaN metal-insulator-semiconductor high-electron-mobility transistors (MIS-HEMTs). Significant suppression of Al-O-H and Al-Al bonds in ALD-Al2O3 has been realized by substituting conventional H2O source with O3. A high dielectric breakdown E-field of 8.5 MV/cm and good TDDB behavior are achieved in a gate dielectric stack consisting of 13-nm O3-Al2O3 and 2-nm H2O-Al2O3 interfacial layer on recessed GaN. By using this 15-nm gate dielectric and a high-temperature gate-recess technique, the density of positive bulk/interface charges in normally-off AlGaN/GaN MIS-HEMTs is remarkably suppressed to as low as 0.9 × 1012 cm-2, contributing to the realization of normally-off operation with a high threshold voltage of +1.6 V and a low specific ON-resistance RON,sp of 0.49 mΩ cm2.

  13. Energy-band alignment of atomic layer deposited (HfO2)x(Al2O3)1 - x gate dielectrics on 4H-SiC

    NASA Astrophysics Data System (ADS)

    Jia, Ren-Xu; Dong, Lin-Peng; Niu, Ying-Xi; Li, Cheng-Zhan; Song, Qing-Wen; Tang, Xiao-Yan; Yang, Fei; Zhang, Yu-Ming

    2015-03-01

    We study a series of (HfO2)x(Al2O3)1 - x /4H-SiC MOS capacitors. It is shown that the conduction band offset of HfO2 is 0.5 eV and the conduction band offset of HfAlO is 1.11-1.72 eV. The conduction band offsets of (HfO2)x(Al2O3)1 - x are increased with the increase of the Al composition, and the (HfO2)x(Al2O3)1 - x offer acceptable barrier heights (> 1 eV) for both electrons and holes. With a higher conduction band offset, (HfO2)x(Al2O3)1 - x/4H-SiC MOS capacitors result in a ˜ 3 orders of magnitude lower gate leakage current at an effective electric field of 15 MV/cm and roughly the same effective breakdown field of ˜ 25 MV/cm compared to HfO2. Considering the tradeoff among the band gap, the band offset, and the dielectric constant, we conclude that the optimum Al2O3 concentration is about 30% for an alternative gate dielectric in 4H-SiC power MOS-based transistors. Project supported by the National Natural Science Foundation of China (Grant Nos. 51272202 and 61234006) and the Science Project of State Grid, China (Grant No. SGRI-WD-71-14-004).

  14. High-temperature studies of multiple fluorinated traps within an Al2O3 gate dielectric for E-Mode AlGaN/GaN power MIS-HEMTs

    NASA Astrophysics Data System (ADS)

    Wang, Yun-Hsiang; Liang, Yung C.; Samudra, Ganesh S.; Chu, Po-Ju; Liao, Ya-Chu; Huang, Chih-Fang; Kuo, Wei-Hung; Lo, Guo-Qiang

    2016-02-01

    Normally-off AlGaN/GaN MIS-HEMT devices with multiple fluorinated ALD-Al2O3 layers as the gate dielectric have been reported to achieve a high threshold voltage for normally-off operations with satisfactory performance for both on and off states at room temperature. However, a large swing in gate threshold voltage is found when devices operate at elevated temperatures. Hence, further study of the gate dielectric on the distribution of fluorinated trap states in the energy band are required to assess the gate function at higher temperatures. Through the use of the charge analytical model and Poole-Frenkel trap emission theory, the gate voltage stressing measurement was carried out to accurately find the effective trap state distribution within the Al2O3 energy bandgap created by fluorinated treatments. For the samples fabricated and used in the investigation, we found that a higher population of fluorinated trap states located deeper than 1.1 eV corresponding to emission levels above 200 °C would allow more trapped charges to remain in the dielectric at high temperature for better threshold voltage retention. We also discovered that a higher fluorine treatment power on the gate dielectric could yield a higher trap state density at deeper levels, resulting in better temperature stability.

  15. In0.53Ga0.47As FinFETs with self-aligned molybdenum contacts and HfO2/Al2O3 gate dielectric

    NASA Astrophysics Data System (ADS)

    Zhang, Xingui; Guo, Hua Xin; Zhu, Zhu; Gong, Xiao; Yeo, Yee-Chia

    2013-06-01

    InGaAs channel FinFETs with self-aligned molybdenum (Mo) contacts was demonstrated using a gate-last process. By realizing Mo contacts on in situ doped n++ InGaAs source and drain and self-aligned to channel, the FinFETs achieved series resistance of ˜250 Ω μm, which is the lowest value reported-to-date for InGaAs non-planar n-MOSFETs. A FinFET with channel length of 500 nm and equivalent oxide thickness (EOT) of 3 nm has an on-state/off-state current ratio of ˜105 and peak extrinsic transconductance of 255 μS/μm at drain voltage of 0.5 V. To further reduce EOT, atomic-layer-deposited HfO2/Al2O3 high-k dielectric was integrated in InGaAs FinFETs. Good interface quality and small EOT of ˜1 nm were achieved. Forming gas annealing (FGA) was used for drive current enhancement. A 300 °C 30 min FGA leads to ˜48% increase in drive current as well as significant reduction of subthreshold swing, probably due to an improvement of the HfO2/Al2O3/InGaAs interface quality.

  16. Border trap reduction in Al2O3/InGaAs gate stacks

    NASA Astrophysics Data System (ADS)

    Tang, Kechao; Winter, Roy; Zhang, Liangliang; Droopad, Ravi; Eizenberg, Moshe; McIntyre, Paul C.

    2015-11-01

    The effect of Al2O3 atomic layer deposition (ALD) temperature on the border trap density (Nbt) of Al2O3/InGaAs gate stacks is investigated quantitatively, and we demonstrate that lowering the trimethylaluminum (TMA)/water vapor ALD temperature from 270 °C to 120 °C significantly reduces Nbt. The reduction of Nbt coincides with increased hydrogen incorporation in low temperature ALD-grown Al2O3 films during post-gate metal forming gas annealing. It is also found that large-dose (˜6000 L) exposure of the In0.53Ga0.47As (100) surface to TMA immediately after thermal desorption of a protective As2 capping layer is an important step to guarantee the uniformity and reproducibility of high quality Al2O3/InGaAs samples made at low ALD temperatures.

  17. Effects of annealing conditions on the dielectric properties of solution-processed Al2O3 layers for indium-zinc-tin-oxide thin-film transistors.

    PubMed

    Kim, Yong-Hoon; Kim, Kwang-Ho; Park, Sung Kyu

    2013-11-01

    In this paper, the effects of annealing conditions on the dielectric properties of solution-processed aluminum oxide (Al2O3) layers for indium-zinc-tin-oxide (IZTO) thin-film transistors (TFTs) have been investigated. The dielectric properties of Al2O3 layers such as leakage current density and dielectric strength were largely affected by their annealing conditions. In particular, oxygen partial pressure in rapid thermal annealing, and the temperature profile of hot plate annealing had profound effects on the dielectric properties. From a refractive index analysis, the enhanced dielectric properties of Al2O3 gate dielectrics can be attributed to higher film density depending on the annealing conditions. With the low-temperature-annealed Al2O3 gate dielectric at 350 degrees C, solution-processed IZTO TFTs with a field-effect mobility of approximately 2.2 cm2/Vs were successfully fabricated. PMID:24245333

  18. Comparative analysis of the effects of tantalum doping and annealing on atomic layer deposited (Ta2O5)x(Al2O3)1-x as potential gate dielectrics for GaN/AlxGa1-xN/GaN high electron mobility transistors

    NASA Astrophysics Data System (ADS)

    Partida-Manzanera, T.; Roberts, J. W.; Bhat, T. N.; Zhang, Z.; Tan, H. R.; Dolmanan, S. B.; Sedghi, N.; Tripathy, S.; Potter, R. J.

    2016-01-01

    This paper describes a method to optimally combine wide band gap Al2O3 with high dielectric constant (high-κ) Ta2O5 for gate dielectric applications. (Ta2O5)x(Al2O3)1-x thin films deposited by thermal atomic layer deposition (ALD) on GaN-capped AlxGa1-xN/GaN high electron mobility transistor (HEMT) structures have been studied as a function of the Ta2O5 molar fraction. X-ray photoelectron spectroscopy shows that the bandgap of the oxide films linearly decreases from 6.5 eV for pure Al2O3 to 4.6 eV for pure Ta2O5. The dielectric constant calculated from capacitance-voltage measurements also increases linearly from 7.8 for Al2O3 up to 25.6 for Ta2O5. The effect of post-deposition annealing in N2 at 600 °C on the interfacial properties of undoped Al2O3 and Ta-doped (Ta2O5)0.12(Al2O3)0.88 films grown on GaN-HEMTs has been investigated. These conditions are analogous to the conditions used for source/drain contact formation in gate-first HEMT technology. A reduction of the Ga-O to Ga-N bond ratios at the oxide/HEMT interfaces is observed after annealing, which is attributed to a reduction of interstitial oxygen-related defects. As a result, the conduction band offsets (CBOs) of the Al2O3/GaN-HEMT and (Ta2O5)0.16(Al2O3)0.84/GaN-HEMT samples increased by ˜1.1 eV to 2.8 eV and 2.6 eV, respectively, which is advantageous for n-type HEMTs. The results demonstrate that ALD of Ta-doped Al2O3 can be used to control the properties of the gate dielectric, allowing the κ-value to be increased, while still maintaining a sufficient CBO to the GaN-HEMT structure for low leakage currents.

  19. GaN MOS-HEMT Using Ultra-Thin Al2O3 Dielectric Grown by Atomic Layer Deposition

    NASA Astrophysics Data System (ADS)

    Yue, Yuan-Zheng; Hao, Yue; Feng, Qian; Zhang, Jin-Cheng; Ma, Xiao-Hua; Ni, Jin-Yu

    2007-08-01

    We report a GaN metal-oxide-semiconductor high electron mobility transistor (MOS-HEMT) with atomic layer deposited (ALD) Al2O3 gate dielectric. Based on the previous work [Appl. Phys. Lett. 86 (2005) 063501] of Ye et al. by decreasing the thickness of the gate oxide to 3.5 nm and optimizing the device fabrication process, the device with maximum transconductance of 150 mS/mm is produced and discussed in comparison with the result of 100 mS/mm of Ye et al. The corresponding drain current density in the 0.8-μm-gate-length MOS-HEMT is 800 mA/mm at the gate bias of 3.0 V. The gate leakage is two orders of magnitude lower than that of the conventional AlGaN/GaN HEMT. The excellent characteristics of this novel MOS-HEMT device structure with ALD Al2O3 gate dielectric are presented.

  20. Al2O3 as a suitable substrate and a dielectric layer for n-layer MoS2

    NASA Astrophysics Data System (ADS)

    Singh, Arunima K.; Hennig, Richard G.; Davydov, Albert V.; Tavazza, Francesca

    2015-08-01

    Sapphire (α-Al2O3) is a common substrate for the growth of single- to few-layer MoS2 films, and amorphous aluminium oxide serves as a high-κ dielectric gate oxide for MoS2 based transistors. Using density-functional theory calculations with a van der Waals functional, we investigate the structural, energetic, and electronic properties of n-layer MoS2 (n = 1and 3) on the α-Al2O3 (0001) surface. Our results show that the sapphire stabilizes single-layer and tri-layer MoS2, while having a negligible effect on the structure, band gap, and electron effective masses of MoS2. This combination of a strong energetic stabilization and weak perturbation of the electronic properties shows that α-Al2O3 can serve as an ideal substrate for depositing ultra-thin MoS2 layers and can also serve as a passivation or gate-oxide layer for MoS2 based devices.

  1. Vacuum ultraviolet photochemical selective area atomic layer deposition of Al2O3 dielectrics

    NASA Astrophysics Data System (ADS)

    Chalker, P. R.; Marshall, P. A.; Dawson, K.; Brunell, I. F.; Sutcliffe, C. J.; Potter, R. J.

    2015-01-01

    We report the photochemical atomic layer deposition of Al2O3 thin films and the use of this process to achieve area-selective film deposition. A shuttered vacuum ultraviolet (VUV) light source is used to excite molecular oxygen and trimethyl aluminum to deposit films at 60°C. In-situ QCM and post-deposition ellipsometric measurements both show that the deposition rate is saturative as a function of irradiation time. Selective area deposition was achieved by projecting the VUV light through a metalized magnesium fluoride photolithographic mask and the selectivity of deposition on the illuminated and masked regions of the substrate is a logarithmic function of the UV exposure time. The Al2O3 films exhibit dielectric constants of 8 - 10 at 1 MHz after forming gas annealing, similar to films deposited by conventional thermal ALD.

  2. Effects of γ-radiation on dielectric properties of LDPE-Al2O3 nanocomposites

    NASA Astrophysics Data System (ADS)

    Ciuprina, Florin; Zaharescu, Traian; Pleşa, Ilona

    2013-03-01

    Until now several methods for processing and characterization have been tested, and some theories and models have been proposed for these materials having a huge nanofiller-polymer interface area which seems to be the main responsible for their unique properties. The accelerated testing by irradiation of LDPE has been extensively studied in order to assess optimized formulation. The present paper characterizes LDPE modified with Al2O3 nanoparticles. The dispersed nanofiller was added in various concentrations (2, 5 and 10 wt%). The accelerated aging under γ-irradiation was accomplished for evaluation of material behavior to hard stressing environment. Dielectric properties (real part of the permittivity and tan delta) and oxidation resistance were discussed. An improvement of the dielectric losses is noticed for the tested nanocomposites at a radiation dose up to 20 kGy. The radiochemical stability studied by chemiluminescence provides satisfactory stability in the correlation with slight modification of basis polymer due to the inert feature of filler.

  3. Microwave dielectric properties of CaCu3Ti4O12-Al2O3 composite

    NASA Astrophysics Data System (ADS)

    Rahman, Mohd Fariz Ab; Abu, Mohamad Johari; Karim, Saniah Ab; Zaman, Rosyaini Afindi; Ain, Mohd Fadzil; Ahmad, Zainal Arifin; Mohamed, Julie Juliewatty

    2016-07-01

    (1-x)CaCu3Ti4O12 + (x)Al2O3 composite (0 ≤ x ≤0.25) was prepared via conventional solid-state reaction method. The fabrication of sample was started with synthesizing stoichiometric CCTO from CaCO3, CuO and TiO2 powders, then wet-mixed in deionized water for 24 h. The process was continued with calcined CCTO powder at 900 °C for 12 h before sintered at 1040 °C for 10 h. Next, the calcined CCTO powder with different amount of Al2O3 were mixed for 24 h, then palletized and sintered at 1040 °C for 10. X-ray diffraction analysis on the sintered samples showed that CCTO powder was in a single phase, meanwhile the trace of secondary peaks which belong to CaAl2O4 and Corundum (Al2O3) could be observed in the other samples Scanning electron microscopy analysis showed that the grain size of the sample is firstly increased with addition of Al2O3 (x = 0.01), then become smaller with the x > 0.01. Microwave dielectric properties showed that the addition of Al2O3 (x = 0.01) was remarkably reduced the dielectric loss while slightly increased the dielectric permittivity. However, further addition of Al2O3 was reduced both dielectric loss and permittivity at least for an order of magnitude.

  4. Enhanced Dielectric Properties and High-Temperature Microwave Absorption Performance of Zn-Doped Al2O3 Ceramic

    NASA Astrophysics Data System (ADS)

    Wang, Yuan; Luo, Fa; Wei, Ping; Zhou, Wancheng; Zhu, Dongmei

    2015-07-01

    To improve the dielectric and microwave absorption properties of Al2O3 ceramic, Zn-doped Al2O3 ceramic was prepared by conventional ceramic processing. X-ray diffraction analysis confirmed that Zn atoms successfully entered the Al2O3 ceramic lattice and occupied Al sites. The complex permittivity increased with increasing Zn concentration, which is mainly attributed to the increase in charged vacancy defects and densification of the Al2O3 ceramic. In addition, the temperature-dependent complex permittivity of 3% Zn-doped Al2O3 ceramic was determined in the temperature range from 298 K to 873 K. Both the real and imaginary parts of the complex permittivity increased monotonically with increasing temperature, which can be ascribed to the shortened relaxation time and increasing electrical conductivity. The increased complex permittivity leads to a great improvement in microwave absorption. In particular, when the temperature is up to 873 K, the 3% Zn-doped Al2O3 ceramic exhibited the best absorption performance with a maximum peak (-12.1 dB) and broad effective absorption bandwidth (reflection loss less than -10 dB from 9.3 GHz to 12.3 GHz). These results reveal that Zn-doped Al2O3 ceramic is a promising candidate for use as a kind of high-temperature microwave absorption material.

  5. Dielectric property determination of hybrid Al2O3-filled MWCNT buckypaper by the rectangular cavity perturbation technique

    NASA Astrophysics Data System (ADS)

    Miao, Hsin-Yuan; Liu, Jih-Hsin; Saravanan, L.; Tsao, Che-Wei; Pan, Jui-Wen

    2015-04-01

    This study investigated the complex dielectric permittivity of freestanding multiwalled carbon nanotube buckypaper (MWCNT-BP) and a synthesized hybrid alumina-filled buckypaper (Al2O3-BP) composite with different alumina loadings (5-30 wt%). The non-destructive microwave transmission technique for complex permittivity determination involving cavity perturbation was employed to characterize a set of Al2O3-BP sheets. This was done by filling a rectangular cavity resonator with a standard dielectric Teflon sample and then performing permittivity measurements for the buckypaper (BP) samples in the X-band frequency range (7-12 GHz). Field-emission scanning electron microscopy (FESEM) was used to analyze the morphology of the MWCNT-BP and the alumina-loaded BP composites. DC electrical resistivity measurements clearly demonstrated conductor-insulator transition. The effect of alumina loadings on the dielectric properties of the synthesized hybrid Al2O3-BP sheet is discussed.

  6. Double nitridation of crystalline ZrO2/Al2O3 buffer gate stack with high capacitance, low leakage and improved thermal stability

    NASA Astrophysics Data System (ADS)

    Huang, Jhih-Jie; Tsai, Yi-Jen; Tsai, Meng-Chen; Lee, Min-Hung; Chen, Miin-Jang

    2015-03-01

    The gate dielectric stack composed of crystalline ZrO2 and Al2O3 buffer layer treated with double nitridation was developed to reduce the capacitance equivalent thickness (CET), leakage current density (Jg), interfacial state density (Dit), and enhance thermal stability as well. A high dielectric constant of the gate stack was provided by the crystalline ZrO2 with tetragonal/cubic phase. The Jg and Dit were suppressed by the insertion of the Al2O3 buffer layer treated with remote NH3 plasma nitridation because of the deactivation of the oxygen vacancies and the well passivation of the Si dangling bonds. A further nitridation using remote N2 plasma on ZrO2 was carried out to reduce the CET and Jg by the enhancement of the dielectric constant and the deactivation of the grain boundaries and oxygen vacancies. Accordingly, a low CET of 1.09 nm, Jg of 3.43 × 10-5 A/cm2, and Dit of 3.35 × 1011 cm-2 eV-1 were achieved in the crystalline ZrO2/Al2O3 buffer gate stack treated with the double nitridation. The hysteresis was also minimized significantly by the post-deposition annealing at 800 °C, which is attributed to the enhanced thermal stability. The results indicate that the crystalline high-K dielectrics/buffer layer with double nitridation treatments is a promising gate stack structure beneficial to the sub-nanometer CET scaling in the future.

  7. Characterization of Damage of Al2O3/Ge Gate Stack Structure Induced with Light Radiation during Plasma Nitridation

    NASA Astrophysics Data System (ADS)

    Kusumandari; Takeuchi, Wakana; Kato, Kimihiko; Shibayama, Shigehisa; Sakashita, Mitsuo; Nakatsuka, Osamu; Zaima, Shigeaki

    2012-01-01

    We have investigated the effects of light radiation during plasma nitridation on the electrical properties of an Al2O3/Ge gate stack structure using the pallet for plasma evaluation (PAPE) technique. From the capacitance-voltage characteristics, the flatband voltage shift due to fixed oxide charges significantly increases after light exposure with an energy higher than 7.5 eV. In addition, the density of trapped charges near the interface and the interface state density (Dit) also significantly increase after light exposure with an energy over 11.3 eV. The net density of positive fixed oxide charges, the density of trapped charges near the interface, and Dit can be reduced by post-metallization annealing (PMA) in N2 ambient at 300 °C.

  8. "Thermal Stabilization Effect" of Al2O3 nano-dopants improves the high-temperature dielectric performance of polyimide.

    PubMed

    Yang, Yang; He, Jinliang; Wu, Guangning; Hu, Jun

    2015-11-24

    Insulation performance of the dielectrics under extreme conditions always attracts widespread attention in electrical and electronic field. How to improve the high-temperature dielectric properties of insulation materials is one of the key issues in insulation system design of electrical devices. This paper studies the temperature-dependent corona resistance of polyimide (PI)/Al2O3 nanocomposite films under high-frequency square-wave pulse conditions. Extended corona resistant lifetime under high-temperature conditions is experimentally observed in the 2 wt% nanocomposite samples. The "thermal stabilization effect" is proposed to explain this phenomenon which attributes to a new kind of trap band caused by nanoparticles. This effect brings about superior space charge characteristics and corona resistance under high temperature with certain nano-doping concentration. The proposed theory is experimentally demonstrated by space charge analysis and thermally stimulated current (TSC) tests. This discovered effect is of profound significance on improving high-temperature dielectric properties of nanocomposites towards various applications.

  9. Electrically programmable-erasable In-Ga-Zn-O thin-film transistor memory with atomic-layer-deposited Al2O3/Pt nanocrystals/Al2O3 gate stack

    NASA Astrophysics Data System (ADS)

    Qian, Shi-Bing; Zhang, Wen-Peng; Liu, Wen-Jun; Ding, Shi-Jin

    2015-12-01

    Amorphous indium-gallium-zinc oxide (a-IGZO) thin-film transistor (TFT) memory is very promising for transparent and flexible system-on-panel displays; however, electrical erasability has always been a severe challenge for this memory. In this article, we demonstrated successfully an electrically programmable-erasable memory with atomic-layer-deposited Al2O3/Pt nanocrystals/Al2O3 gate stack under a maximal processing temperature of 300 oC. As the programming voltage was enhanced from 14 to 19 V for a constant pulse of 0.2 ms, the threshold voltage shift increased significantly from 0.89 to 4.67 V. When the programmed device was subjected to an appropriate pulse under negative gate bias, it could return to the original state with a superior erasing efficiency. The above phenomena could be attributed to Fowler-Nordheim tunnelling of electrons from the IGZO channel to the Pt nanocrystals during programming, and inverse tunnelling of the trapped electrons during erasing. In terms of 0.2-ms programming at 16 V and 350-ms erasing at -17 V, a large memory window of 3.03 V was achieved successfully. Furthermore, the memory exhibited stable repeated programming/erasing (P/E) characteristics and good data retention, i.e., for 2-ms programming at 14 V and 250-ms erasing at -14 V, a memory window of 2.08 V was still maintained after 103 P/E cycles, and a memory window of 1.1 V was retained after 105 s retention time.

  10. Improvement in dielectric and mechanical performance of CaCu3.1Ti4O12.1 by addition of Al2O3 nanoparticles.

    PubMed

    Puchmark, Chompoonuch; Rujijanagul, Gobwute

    2012-01-05

    The properties of CaCu3.1Ti4O12.1 [CC3.1TO] ceramics with the addition of Al2O3 nanoparticles, prepared via a solid-state reaction technique, were investigated. The nanoparticle additive was found to inhibit grain growth with the average grain size decreasing from approximately 7.5 μm for CC3.1TO to approximately 2.0 μm for the unmodified samples, while the Knoop hardness value was found to improve with a maximum value of 9.8 GPa for the 1 vol.% Al2O3 sample. A very high dielectric constant > 60,000 with a low loss tangent (approximately 0.09) was observed for the 0.5 vol.% Al2O3 sample at 1 kHz and at room temperature. These data suggest that nanocomposites have a great potential for dielectric applications.

  11. Improvement in dielectric and mechanical performance of CaCu3.1Ti4O12.1 by addition of Al2O3 nanoparticles

    PubMed Central

    2012-01-01

    The properties of CaCu3.1Ti4O12.1 [CC3.1TO] ceramics with the addition of Al2O3 nanoparticles, prepared via a solid-state reaction technique, were investigated. The nanoparticle additive was found to inhibit grain growth with the average grain size decreasing from approximately 7.5 μm for CC3.1TO to approximately 2.0 μm for the unmodified samples, while the Knoop hardness value was found to improve with a maximum value of 9.8 GPa for the 1 vol.% Al2O3 sample. A very high dielectric constant > 60,000 with a low loss tangent (approximately 0.09) was observed for the 0.5 vol.% Al2O3 sample at 1 kHz and at room temperature. These data suggest that nanocomposites have a great potential for dielectric applications. PMID:22221316

  12. Dielectric properties of Al2O3 coatings deposited via atmospheric plasma spraying and dry-ice blasting correlated with microstructural characteristics

    NASA Astrophysics Data System (ADS)

    Dong, Shujuan; Song, Bo; Liao, Hanlin; Coddet, Christian

    2015-01-01

    In this work, atmospheric plasma spraying combined with dry-ice blasting have been used to prepare alumina (Al2O3) coatings designed for insulating applications. The microstructural characteristics and dielectric properties of Al2O3 coatings were presented. The electrical insulating properties, i.e., dielectric strength and breakdown voltage, were investigated by dielectric breakdown test using direct current and alternating current. Relationships between dielectric properties and coating characteristics were discussed. The results showed that dry-ice blasting used during atmospheric plasma spray process allowed the production of coatings with better dielectric properties than those prepared without dry-ice blasting. The dielectric properties were correlated with the microstructural characteristics, not with phase composition.

  13. Measurement of the dielectric function of α-Al2O3 by transmission electron microscopy - Electron energy-loss spectroscopy without Cerenkov radiation effects.

    PubMed

    Sakaguchi, Norihito; Tanda, Luka; Kunisada, Yuji

    2016-10-01

    The dielectric function of α-Al2O3 was measured by electron energy-loss spectroscopy (EELS) coupled with the difference method. The influence of Cerenkov radiation was significant in measurements using a 200kV transmission electron microscope (TEM) and the correct dielectric function could not be obtained using the conventional EELS procedure. However, a good agreement between the optical data and EELS for the dielectric functions was obtained via a 60kV TEM. Combining EELS and the difference method, however, provided an accurate measurement of the dielectric function for α-Al2O3 even at an accelerating voltage of 200kV. The combination of EELS and the difference method in the nano-beam diffraction mode could derive an accurate dielectric function with superior spatial resolution regardless of the occurrence of Cerenkov radiation. PMID:27448199

  14. Measurement of the dielectric function of α-Al2O3 by transmission electron microscopy - Electron energy-loss spectroscopy without Cerenkov radiation effects.

    PubMed

    Sakaguchi, Norihito; Tanda, Luka; Kunisada, Yuji

    2016-10-01

    The dielectric function of α-Al2O3 was measured by electron energy-loss spectroscopy (EELS) coupled with the difference method. The influence of Cerenkov radiation was significant in measurements using a 200kV transmission electron microscope (TEM) and the correct dielectric function could not be obtained using the conventional EELS procedure. However, a good agreement between the optical data and EELS for the dielectric functions was obtained via a 60kV TEM. Combining EELS and the difference method, however, provided an accurate measurement of the dielectric function for α-Al2O3 even at an accelerating voltage of 200kV. The combination of EELS and the difference method in the nano-beam diffraction mode could derive an accurate dielectric function with superior spatial resolution regardless of the occurrence of Cerenkov radiation.

  15. Role of surface interactions in the dynamics of chiral isopentylcyanobiphenyl mixed with Al2O3 powder as studied by dielectric spectroscopy: numerical analysis.

    PubMed

    Bąk, A; Chłędowska, K

    2011-06-01

    The results of dielectric measurements for a mixture of chiral liquid crystal 5*CB with Al(2)O(3) powder are given. A detailed analysis of the dielectric spectra enabled us to obtain information about the influence of the Al(2)O(3) grains on the dynamics of the liquid-crystal molecules. Numerical analysis of the results confirmed that the dielectric spectra obtained are complex. In the low-frequency range they are dominated by ionic conductivity while in the whole frequency range two maxima appear. One of them is related to rotations of the molecules around their short axes. In the isotropic phase the corresponding values of the relaxation times are very close to those for bulk 5*CB. Relaxation and conduction processes can be described by a Vogel-Fulcher-Tammann function. In the cholesteric phase, rotation of 5*CB molecules trapped in the pores of Al(2)O(3) occurs. Another relaxation process results from dynamics of 5*CB molecules anchoring to Al(2)O(3) grains. The temperature dependence of relaxation times related to this process is nonmonotonic.

  16. Control of threshold voltage in E-mode and D-mode GaN-on-Si metal-insulator-semiconductor heterostructure field effect transistors by in-situ fluorine doping of atomic layer deposition Al2O3 gate dielectrics

    NASA Astrophysics Data System (ADS)

    Roberts, J. W.; Chalker, P. R.; Lee, K. B.; Houston, P. A.; Cho, S. J.; Thayne, I. G.; Guiney, I.; Wallis, D.; Humphreys, C. J.

    2016-02-01

    We report the modification and control of threshold voltage in enhancement and depletion mode AlGaN/GaN metal-insulator-semiconductor heterostructure field effect transistors through the use of in-situ fluorine doping of atomic layer deposition Al2O3. Uniform distribution of F ions throughout the oxide thickness are achievable, with a doping level of up to 5.5 × 1019 cm-3 as quantified by secondary ion mass spectrometry. This fluorine doping level reduces capacitive hysteretic effects when exploited in GaN metal-oxide-semiconductor capacitors. The fluorine doping and forming gas anneal also induces an average positive threshold voltage shift of between 0.75 and 1.36 V in both enhancement mode and depletion mode GaN-based transistors compared with the undoped gate oxide via a reduction of positive fixed charge in the gate oxide from +4.67 × 1012 cm-2 to -6.60 × 1012 cm-2. The application of this process in GaN based power transistors advances the realisation of normally off, high power, high speed devices.

  17. InP MOS capacitor and E-mode n-channel FET with ALD Al2O3-based high- k dielectric

    NASA Astrophysics Data System (ADS)

    Yen, Chih-Feng; Yeh, Min-Yen; Chong, Kwok-Keung; Hsu, Chun-Fa; Lee, Ming-Kwei

    2016-07-01

    The electrical characteristics of atomic-layer-deposited Al2O3/TiO2/Al2O3 on (NH4)2S-treated InP MOS capacitor and related MOSFET were studied. The electrical characteristics were improved from the reduction of native oxides and sulfur passivation on InP by (NH4)2S treatment. The high bandgap Al2O3 on TiO2 can reduce the thermionic emission, and the Al2O3 under TiO2 improves the interface-state density by self-cleaning. The high dielectric constant TiO2 is used to lower the equivalent oxide thickness. The leakage currents can reach 2.3 × 10-8 and 2.2 × 10-7 A/cm2 at ±2 MV/cm, respectively. The lowest interface-state density is 4.6 × 1011 cm-2 eV-1 with a low-frequency dispersion of 15 %. The fabricated enhancement-mode n-channel sulfur-treated InP MOSFET exhibits good electrical characteristics with a maximum transconductance of 146 mS/mm and effective mobility of 1760 cm2/V s. The subthreshold swing and threshold voltage are 117 mV/decade and 0.44 V, respectively.

  18. Temperature- and frequency-dependent dielectric behaviors of insulator/semiconductor (Al2O3/ZnO) nanolaminates with various ZnO thicknesses

    NASA Astrophysics Data System (ADS)

    Li, Jin; Bi, Xiaofang

    2016-07-01

    Al2O3/ZnO nanolaminates (NLs) with various ZnO sublayer thicknesses were prepared by atomic layer deposition. The Al2O3 sublayers are characterized as amorphous and the ZnO sublayers have an oriented polycrystalline structure. As the ZnO thickness decreases to a certain value, each NL exhibits a critical temperature at which its dielectric constant starts to rise quickly. Moreover, this temperature increases as the ZnO thickness is decreased further. On the other hand, the permittivity demonstrates a large value of several hundred at a frequency  ⩽1000 Hz, followed by a steplike decrease at a higher frequency. The change in the cut-off frequency with ZnO thickness is characterized by a hook function. It is revealed that the Coulomb confinement effect becomes predominant in the dielectric behaviors of the NLs with very thin ZnO. As the ZnO thickness decreases to about the same as or even smaller than the Bohr radius of ZnO, a great change in the carrier concentration and effective mass of ZnO is induced, which is shown to be responsible for the peculiar dielectric behaviors of Al2O3/ZnO with very thin ZnO. These findings provide insight into the prevailing mechanisms to optimize the dielectric properties of semiconductor/insulator laminates with nanoscale sublayer thickness.

  19. Effects of the annealing temperature and atmosphere on the microstructures and dielectric properties of ZnO/Al2O3 composite coatings

    NASA Astrophysics Data System (ADS)

    Wei, Ping; Zhu, Dongmei; Huang, Shanshan; Zhou, Wancheng; Luo, Fa

    2013-11-01

    ZnO/Al2O3 composite coatings were fabricated by atmospheric plasma spraying technology (APS). The effects of annealing temperature and atmospheres (in air or vacuum) on the microstructure and phase transformation of the sprayed coatings were studied by scanning electron microscope (SEM) and X-ray diffraction spectroscopy (XRD). The microwave dielectric properties of these coatings after annealing treatment were also discussed in the frequency range of 8.2-12.4 GHz. Both the real part and the imaginary part of the permittivity decreased significantly with increased annealing temperature when the annealing process is carried out in air atmosphere, while the complex permittivity of the coating annealed in vacuum atmosphere was obviously increased compared to the initial sprayed coating. The mechanism for the variation of dielectric properties of sprayed ZnO/Al2O3 composite coating caused by annealing treatment was discussed in this study.

  20. A study on the magnetic and dielectric behavior of nanostructured YCrO3/Al2O3 composite ceramics

    NASA Astrophysics Data System (ADS)

    Duran, A.; Tiznado, H.; Romo-Herrera, J. M.; Verdin, E.; Siqueiros, J.; Escudero, R.

    2013-03-01

    Ferroelectric core-shell particles are promising architectures as functional bulk composites for potential use as dielectric resonators, supercapacitors, or multiferroic based devices. The core-shell architecture in ferroelectrics acts as barrier layer localizing electronic and ionic space charges, increasing thus the capacitance density. In bulk multiferroics, the barrier layer improves the grain boundary interface and leads to increased functionality, that is, higher charge storage and lower dielectric losses. In YCrO3, large dielectric losses and changes in the activation energy have shown to be very dependent on the synthesis route as well as in the size, and chemical state of the starting grains. Increase of the conductivity and dielectric losses are associated to loose charge leaking out through the grain boundaries. Here we added an alumina shell-layer of 5, 30 or 90 nm to cover the YCrO3 grains, using an atomic layer deposition (ALD) technique, followed by a sintering step to produce a multiferroic capacitor. The powder samples were characterized by XRD, XPS, SEM and TEM. Also, the magnetic and dielectric properties were evaluated and compared to bulk nanostructured ceramics of the same composition, but without the alumina shell. J. S. Thanks to CoNaCyT 166286 and R. E. thanks to CONACyT 129293, DGAPA-UNAM IN100711, BISNANO 2011, PICCO 11-7 Institute of Sciences DF.

  1. A Study of the Dielectric Properties of Al2O3-TiO2 Composite in the Microwave and RF Regions

    NASA Astrophysics Data System (ADS)

    Campos, R. V. B.; Bezerra, C. L.; Oliveira, L. N. L.; Gouveia, D. X.; Silva, M. A. S.; Sombra, A. S. B.

    2015-11-01

    We have studied the effect of addition of titania, as a sintering agent, to alumina on the dielectric characteristics of the ceramic composites obtained. The dielectric properties of the titania-alumina composites were studied by use of impedance spectroscopy and the Hakki-Coleman method in the radio-frequency and microwave regions, respectively. The temperature coefficient of the resonant frequency ( τ f ) was also studied. Dielectric permittivity ( ɛ') was increased and the dielectric loss (tan δ) was improved by addition of titania, as a result of better sintering; addition of 10 wt.% titania resulted in ɛ' = 12.68 and tan δ = 8.23 × 10-4 in the microwave region. Increasing the concentration of TiO2 led to inversion of the τ f signal; values were positive when the concentration of TiO2 was >7.5 wt.%. The ceramic composites were evaluated as antennas; for all samples the return loss ( S 11) was <-10 dB and the gain was approximately 3 dBi. Addition of 7.5 wt.% titania to the Al2O3 improved antenna performance. In conclusion, addition of the TiO2 to alumina improves its dielectric properties, resulting in the possibility of use of such composites as dielectric resonator antennas (DRA).

  2. Electrical properties of GaAs metal-oxide-semiconductor structure comprising Al2O3 gate oxide and AlN passivation layer fabricated in situ using a metal-organic vapor deposition/atomic layer deposition hybrid system

    NASA Astrophysics Data System (ADS)

    Aoki, Takeshi; Fukuhara, Noboru; Osada, Takenori; Sazawa, Hiroyuki; Hata, Masahiko; Inoue, Takayuki

    2015-08-01

    This paper presents a compressive study on the fabrication and optimization of GaAs metal-oxide-semiconductor (MOS) structures comprising a Al2O3 gate oxide, deposited via atomic layer deposition (ALD), with an AlN interfacial passivation layer prepared in situ via metal-organic chemical vapor deposition (MOCVD). The established protocol afforded self-limiting growth of Al2O3 in the atmospheric MOCVD reactor. Consequently, this enabled successive growth of MOCVD-formed AlN and ALD-formed Al2O3 layers on the GaAs substrate. The effects of AlN thickness, post-deposition anneal (PDA) conditions, and crystal orientation of the GaAs substrate on the electrical properties of the resulting MOS capacitors were investigated. Thin AlN passivation layers afforded incorporation of optimum amounts of nitrogen, leading to good capacitance-voltage (C-V) characteristics with reduced frequency dispersion. In contrast, excessively thick AlN passivation layers degraded the interface, thereby increasing the interfacial density of states (Dit) near the midgap and reducing the conduction band offset. To further improve the interface with the thin AlN passivation layers, the PDA conditions were optimized. Using wet nitrogen at 600 °C was effective to reduce Dit to below 2 × 1012 cm-2 eV-1. Using a (111)A substrate was also effective in reducing the frequency dispersion of accumulation capacitance, thus suggesting the suppression of traps in GaAs located near the dielectric/GaAs interface. The current findings suggest that using an atmosphere ALD process with in situ AlN passivation using the current MOCVD system could be an efficient solution to improving GaAs MOS interfaces.

  3. Leakage Current Mechanism of InN-Based Metal-Insulator-Semiconductor Structures with Al2O3 as Dielectric Layers

    NASA Astrophysics Data System (ADS)

    Wang, X.; Zhang, G. Z.; Xu, Y.; Gan, X. W.; Chen, C.; Wang, Z.; Wang, Y.; Wang, J. L.; Wang, T.; Wu, H.; Liu, C.

    2016-01-01

    InN-based metal-insulator-semiconductor (MIS) structures were prepared with Al2O3 as the gate oxides. Surface morphologies of InN films are improved with increasing Mg doping concentrations. At high frequencies, the measured capacitance densities deviate from the real ones with turning frequencies inversely proportional to series resistances. An ultralow leakage current density of 1.35 × 10-9 A/cm2 at 1 V is obtained. Fowler-Nordheim tunneling is the main mechanism of the leakage current at high fields, while Schottky emission dominates at low fields. Capacitance densities shift with different biases, indicating that the InN-based MIS structures can serve as potential candidates for MIS field-effect transistors.

  4. Microstructure and dielectric properties of (Ba 0.6Sr 0.4)TiO 3 thin films grown on super smooth glazed-Al 2O 3 ceramics substrate

    NASA Astrophysics Data System (ADS)

    Chen, Hongwei; Yang, Chuanren; Zheng, Shanxue; Zhang, Jihua; Zhang, Qiaozhen; Lei, Guanhuan; Lou, Feizhi; Yang, Lijun

    2011-12-01

    Modified substrates with nanometer scale smooth surface were obtained via coating a layer of CaO-Al2O3-SiO2 (CaAlSi) high temperature glaze with proper additives on the rough-95% Al2O3 ceramics substrates. (Ba0.6Sr0.4)TiO3 (BST) thin films were deposited on modified Al2O3 substrates by radio-frequency magnetron sputtering. The microstructure, dielectric, and insulating properties of BST thin films grown on glazed-Al2O3 substrates were investigated by X-ray diffraction (XRD), atomic force microscope (AFM), and dielectric properties measurement. These results showed that microstructure and dielectric properties of BST thin films grown on glazed-Al2O3 substrates were almost consistent with that of BST thin films grown on LaAlO3 (1 0 0) single-crystal substrates. Thus, the expensive single-crystal substrates may be substituted by extremely cheap glazed-Al2O3 substrates.

  5. “Thermal Stabilization Effect” of Al2O3 nano-dopants improves the high-temperature dielectric performance of polyimide

    PubMed Central

    Yang, Yang; He, Jinliang; Wu, Guangning; Hu, Jun

    2015-01-01

    Insulation performance of the dielectrics under extreme conditions always attracts widespread attention in electrical and electronic field. How to improve the high-temperature dielectric properties of insulation materials is one of the key issues in insulation system design of electrical devices. This paper studies the temperature-dependent corona resistance of polyimide (PI)/Al2O3 nanocomposite films under high-frequency square-wave pulse conditions. Extended corona resistant lifetime under high-temperature conditions is experimentally observed in the 2 wt% nanocomposite samples. The “thermal stabilization effect” is proposed to explain this phenomenon which attributes to a new kind of trap band caused by nanoparticles. This effect brings about superior space charge characteristics and corona resistance under high temperature with certain nano-doping concentration. The proposed theory is experimentally demonstrated by space charge analysis and thermally stimulated current (TSC) tests. This discovered effect is of profound significance on improving high-temperature dielectric properties of nanocomposites towards various applications. PMID:26597981

  6. “Thermal Stabilization Effect” of Al2O3 nano-dopants improves the high-temperature dielectric performance of polyimide

    NASA Astrophysics Data System (ADS)

    Yang, Yang; He, Jinliang; Wu, Guangning; Hu, Jun

    2015-11-01

    Insulation performance of the dielectrics under extreme conditions always attracts widespread attention in electrical and electronic field. How to improve the high-temperature dielectric properties of insulation materials is one of the key issues in insulation system design of electrical devices. This paper studies the temperature-dependent corona resistance of polyimide (PI)/Al2O3 nanocomposite films under high-frequency square-wave pulse conditions. Extended corona resistant lifetime under high-temperature conditions is experimentally observed in the 2 wt% nanocomposite samples. The “thermal stabilization effect” is proposed to explain this phenomenon which attributes to a new kind of trap band caused by nanoparticles. This effect brings about superior space charge characteristics and corona resistance under high temperature with certain nano-doping concentration. The proposed theory is experimentally demonstrated by space charge analysis and thermally stimulated current (TSC) tests. This discovered effect is of profound significance on improving high-temperature dielectric properties of nanocomposites towards various applications.

  7. Instability investigation of In0.7Ga0.3As quantum-well MOSFETs with Al2O3 and Al2O3/HfO2

    NASA Astrophysics Data System (ADS)

    Kwon, Hyuk-Min; Kim, Do-Kywn; Lim, Sung-Kyu; Hwang, Hae-Chul; Son, Seung Woo; Park, Jung Ho; Park, Won-Sang; Kim, Jin Su; Shin, Chan-Soo; Park, Won-Kyu; Lee, Jung Hee; Kim, Taewoo; Kim, Dae-Hyun

    2016-07-01

    We present an instability investigation of In0.7Ga0.3As quantum-well (QW) metal-oxide-semiconductor field-effect-transistors (MOSFETs) on InP substrate with Al2O3 and Al2O3/HfO2 gate stacks. The device with bi-layer Al2O3/HfO2 gate stack exhibits larger shift in threshold-voltage (ΔVT) under a constant-voltage-stress condition (CVS), than one with single Al2O3 gate stack. At cryogenic temperature, the device with bi-layer Al2O3/HfO2 gate stack also induces worse hysteresis behavior than one with single Al2O3 gate stack. These are mainly attributed to more traps inside the HfO2 material, yielding a charge build-up inside the HfO2 gate dielectric. This strongly calls for a follow-up process to minimize those traps within the high-k dielectric layer and eventually to improve the reliability of InGaAs MOSFETs with HfO2-based high-k gate dielectric.

  8. Effect of proton irradiation dose on InAlN/GaN metal-oxide semiconductor high electron mobility transistors with Al2O3 gate oxide

    DOE PAGES

    Ahn, Shihyun; Kim, Byung -Jae; Lin, Yi -Hsuan; Ren, Fan; Pearton, Stephen J.; Yang, Gwangseok; Kim, Jihyun; Kravchenko, Ivan I.

    2016-07-26

    The effects of proton irradiation on the dc performance of InAlN/GaN metal-oxide-semiconductor high electron mobility transistors (MOSHEMTs) with Al2O3 as the gate oxide were investigated. The InAlN/GaN MOSHEMTs were irradiated with doses ranging from 1×1013 to 1×1015cm–2 at a fixed energy of 5MeV. There was minimal damage induced in the two dimensional electron gas at the lowest irradiation dose with no measurable increase in sheet resistance, whereas a 9.7% increase of the sheet resistance was observed at the highest irradiation dose. By sharp contrast, all irradiation doses created more severe degradation in the Ohmic metal contacts, with increases of specificmore » contact resistance from 54% to 114% over the range of doses investigated. These resulted in source-drain current–voltage decreases ranging from 96 to 242 mA/mm over this dose range. The trap density determined from temperature dependent drain current subthreshold swing measurements increased from 1.6 × 1013 cm–2 V–1 for the reference MOSHEMTs to 6.7 × 1013 cm–2 V–1 for devices irradiated with the highest dose. In conclusion, the carrier removal rate was 1287 ± 64 cm–1, higher than the authors previously observed in AlGaN/GaN MOSHEMTs for the same proton energy and consistent with the lower average bond energy of the InAlN.« less

  9. Performance and carrier transport analysis of In0.7Ga0.3As quantum-well MOSFETs with Al2O3/HfO2 gate stack

    NASA Astrophysics Data System (ADS)

    Son, Seung-Woo; Park, Jung-Ho; Baek, Ji-Min; Kim, Jin Su; Kim, Do-Kywn; Shin, Seung Heon; Banerjee, S. K.; Lee, Jung-Hee; Kim, Tae-Woo; Kim, Dae-Hyun

    2016-09-01

    In this paper, we have fabricated and characterized In0.7Ga0.3As quantum-well (QW) metal-oxide-semiconductor field-effect-transistors (MOSFETs). We have employed the gate dielectric of the Al2O3/HfO2 (0.6/2 nm) bi-layer stack by ALD. The fabricated device with Lg = 4 μm exhibits a record maximum transconductance (gm_max) in excess of 520 μS/μm at >1 μm region, and reasonably good electrostatic integrity, such as SS = 110 mV/decade and DIBL = 43 mV/V. Also, we have investigated the gate length scaling behavior in terms of output, transconductance, and transfer characteristics. In particular, our devices feature very uniform values of the electrostatic integrity, such as SS = 100-110 mV/decade, VT = -0.25 V to -0.2 V and DIBL = 40-50 mV/V, as Lg decreases from 10 μm to 4 μm. Furthermore, we have explored the impact of source resistance (RS) onto the device characteristics of the InGaAs QW MOSFETs. In doing so, we have modeled both measured extrinsic transconductance (gm_ext) and intrinsic transconductance (gm_int) as a function of Lg.

  10. Gamma and proton irradiation effects and thermal stability of electrical characteristics of metal-oxide-silicon capacitors with atomic layer deposited Al2O3 dielectric

    NASA Astrophysics Data System (ADS)

    Rafí, J. M.; Pellegrini, G.; Fadeyev, V.; Galloway, Z.; Sadrozinski, H. F.-W.; Christophersen, M.; Phlips, B. F.; Lynn, D.; Kierstead, J.; Hoeferkamp, M.; Gorelov, I.; Palni, P.; Wang, R.; Seidel, S.

    2016-02-01

    The radiation hardness and thermal stability of the electrical characteristics of atomic layer deposited Al2O3 layers to be used as passivation films for silicon radiation detectors with slim edges are investigated. To directly measure the interface charge and to evaluate its change with the ionizing dose, metal-oxide-silicon (MOS) capacitors implementing differently processed Al2O3 layers were fabricated on p-type silicon substrates. Qualitatively similar results are obtained for degradation of capacitance-voltage and current-voltage characteristics under gamma and proton irradiations up to equivalent doses of 30 Mrad and 21.07 Mrad, respectively. While similar negative charge densities are initially extracted for all non-irradiated capacitors, superior radiation hardness is obtained for MOS structures with alumina layers grown with H2O instead of O3 as oxidant precursor. Competing effects between radiation-induced positive charge trapping and hydrogen release from the H2O-grown Al2O3 layers may explain their higher radiation resistance. Finally, irradiated and non-irradiated MOS capacitors with differently processed Al2O3 layers have been subjected to thermal treatments in air at temperatures ranging between 100 °C and 200 °C and the thermal stability of their electrical characteristics has been evaluated. Partial recovery of the gamma-induced degradation has been noticed for O3-grown MOS structures. This can be explained by a trapped holes emission process, for which an activation energy of 1.38 ± 0.15 eV has been extracted.

  11. Gamma and proton irradiation effects and thermal stability of electrical characteristics of metal-oxide-silicon capacitors with atomic layer deposited Al2O3 dielectric

    DOE PAGES

    J. M. Rafi; Lynn, D.; Pellegrini, G.; Fadeyev, V.; Galloway, Z.; Sadrozinski, H. F. -W.; Christophersen, M.; Philips, B. F.; Kierstead, J.; Hoeferkamp, M.; et al

    2015-12-11

    The radiation hardness and thermal stability of the electrical characteristics of atomic layer deposited Al2O3 layers to be used as passivation films for silicon radiation detectors with slim edges are investigated. To directly measure the interface charge and to evaluate its change with the ionizing dose, metal-oxide-silicon (MOS) capacitors implementing differently processed Al2O3 layers were fabricated on p-type silicon substrates. Qualitatively similar results are obtained for degradation of capacitance–voltage and current–voltage characteristics under gamma and proton irradiations up to equivalent doses of 30 Mrad and 21.07 Mrad, respectively. While similar negative charge densities are initially extracted for all non-irradiated capacitors,more » superior radiation hardness is obtained for MOS structures with alumina layers grown with H2O instead of O3 as oxidant precursor. Competing effects between radiation-induced positive charge trapping and hydrogen release from the H2O-grown Al2O3 layers may explain their higher radiation resistance. Finally, irradiated and non-irradiated MOS capacitors with differently processed Al2O3 layers have been subjected to thermal treatments in air at temperatures ranging between 100 °C and 200 °C and the thermal stability of their electrical characteristics has been evaluated. Partial recovery of the gamma-induced degradation has been noticed for O3-grown MOS structures. Lastly, this can be explained by a trapped holes emission process, for which an activation energy of 1.38 ± 0.15 eV has been extracted.« less

  12. Novel integration of ultrathin Al2O3 with low-k dielectric as bilayer liner for capacitance optimization and stress mitigation in Cu through-silicon-via

    NASA Astrophysics Data System (ADS)

    Zhang, Lin; Li, Hong Yu; Shang, Yang; Yoo, Woosik; Yu, Hao; Tan, Chuan Seng

    2016-04-01

    Through-silicon-via (TSV) used in three-dimensional (3D) stacked dies must present small electrical parasitic, such as capacitance, to allow for low latency signal transmission. Stable TSV capacitance is desired to overcome the spatial circuit performance variation caused by non-uniform hot-spot heating. In this work, a novel combination of low-k with ultrathin Al2O3 bilayer liner is successfully integrated in the TSV. The TSV capacitance is reduced by ˜26% as compared to plasma-enhanced tetrahydrothosilicate (PETEOS) oxide liner. Stable TSV capacitance within the operating voltage of interest (˜0-5 V) is achieved by operating the TSV in a stable accumulation capacitance region. The positive shift in the flat-band voltage (ΔV FB = +19 V) is achieved by utilizing Al2O3-induced negative fixed charge (|Q f| = 1.3 × 1012 cm-2) at the Si/low-k interface. Leakage current density of the bilayer liner is improved to a level comparable with the PETEOS oxide liner post annealing [forming gas (N2/H2) at 350 °C for 2 h or 400 °C for 0.5 h]. Low-k material with a smaller elastic modulus improves the thermo-mechanical stress exerted on the surrounding Si substrate compared with PETEOS oxide.

  13. Investigation of spatial charge distribution and electrical dipole in atomic layer deposited Al2O3 on 4H-SiC

    NASA Astrophysics Data System (ADS)

    Han, Kai; Wang, Xiaolei; Yuan, Li; Wang, Wenwu

    2016-06-01

    Charge distribution and electrical dipole in an Al2O3/4H-SiC structure are investigated by capacitance–voltage measurement and x-ray photoelectron spectroscopy (XPS). The charge densities in Al2O3 and at the Al2O3/4H-SiC interface are negligible and  ‑6.89  ×  1011 cm‑2, respectively. Thus the small charge amount indicates the suitability of Al2O3 as a gate dielectric. The dipole at the Al2O3/4H-SiC interface is  ‑0.3 to  ‑0.91 V. The XPS manifests electron transfer from Al2O3 to 4H-SiC. The dipole formation is explained by a gap state model and the higher charge neutrality level of Al2O3 than the Fermi level of 4H-SiC, which confirms the feasibility of the gap state model on investigating band lineup at heterojunctions. The electrical dipole at the Al2O3/4H-SiC interface is critical for threshold voltage tuning. These results are helpful in engineering the SiC based gate stacks.

  14. Structural properties and transfer characteristics of sputter deposition AlN and atomic layer deposition Al2O3 bilayer gate materials for H-terminated diamond field effect transistors

    NASA Astrophysics Data System (ADS)

    Banal, Ryan G.; Imura, Masataka; Liu, Jiangwei; Koide, Yasuo

    2016-09-01

    Significant improvements in electrical properties are achieved from AlN/Al2O3 stack gate H-terminated diamond metal-insulator-semiconductor field-effect transistors (MISFETs) upon improving the structural quality of an AlN insulating layer. The 5-nm-thick Al2O3 layer and 175-nm-thick AlN film are successively deposited by atomic layer deposition and sputter deposition techniques, respectively, on a (100) H-diamond epitaxial layer substrate. The AlN layer exhibits a poly-crystalline structure with the hexagonal wurtzite phase. The crystallite growth proceeds along the c-axis direction and perpendicular to the substrate surface, resulting in a columnar grain structure with an average grain size of around ˜40 nm. The MIS diode fabricated provides a leak current density as low as ˜10-5 A/cm2 at gate voltage bias in the range of -8 V and +4 V. The MISFET fabricated shows normally off enhancement mode transfer characteristic. The drain-source current maximum, threshold voltage, and maximum extrinsic conductance of the FET with 4 μm gate length are -8.89 mA/mm, -0.22 V, and 6.83 mS/mm, respectively.

  15. A comparison between HfO2/Al2O3 nano-laminates and ternary HfxAlyO compound as the dielectric material in InGaAs based metal-oxide-semiconductor (MOS) capacitors

    NASA Astrophysics Data System (ADS)

    Krylov, Igor; Pokroy, Boaz; Eizenberg, Moshe; Ritter, Dan

    2016-09-01

    We compare the electrical properties of HfO2/Al2O3 nano-laminates with those of the ternary HfxAlyO compound in metal oxide semiconductor (MOS) capacitors. The dielectrics were deposited by atomic layer deposition on InGaAs. Water, ozone, and oxygen plasma were tested as oxygen precursors, and best results were obtained using water. The total dielectric thickness was kept constant in our experiments. It was found that the effective dielectric constant increased and the leakage current decreased with the number of periods. Best results were obtained for the ternary compound. The effect of the sublayer thicknesses on the electrical properties of the interface was carefully investigated, as well as the role of post-metallization annealing. Possible explanations for the observed trends are provided. We conclude that the ternary HfxAlyO compound is more favorable than the nano-laminates approach for InGaAs based MOS transistor applications.

  16. Transport mechanisms of leakage current in Al2O3/InAlAs MOS capacitors

    NASA Astrophysics Data System (ADS)

    Jin, Chengji; Lu, Hongliang; Zhang, Yimen; Zhang, Yuming; Guan, He; Wu, Lifan; Lu, Bin; Liu, Chen

    2016-09-01

    An Al2O3 layer is inserted between the InAlAs layer and the metal gate in InAs/AlSb HEMTs to suppress the leakage current. The transport mechanisms of leakage current in Al2O3/InAlAs metal-oxide-semiconductor (MOS) capacitors at both positive and negative biases at different temperatures ranging from 10 °C to 70 °C are investigated. For positive bias, the leakage current is dominated by Schottky emission. Based on the fitted straight lines, the relative dielectric constant of Al2O3 and the barrier height between Al2O3 and InAlAs are extracted. However, for negative bias, the leakage current is dominated by Frenkel-Poole (F-P) emission and the depth of the trap energy level from the conduction band (ϕt) is extracted. Furthermore, authors explain the reason why the dominating mechanisms at positive and negative biases are different.

  17. Atomic Layer Deposition of Al2O3 on WSe2 Functionalized by Titanyl Phthalocyanine.

    PubMed

    Park, Jun Hong; Fathipour, Sara; Kwak, Iljo; Sardashti, Kasra; Ahles, Christopher F; Wolf, Steven F; Edmonds, Mary; Vishwanath, Suresh; Xing, Huili Grace; Fullerton-Shirey, Susan K; Seabaugh, Alan; Kummel, Andrew C

    2016-07-26

    To deposit an ultrathin dielectric onto WSe2, monolayer titanyl phthalocyanine (TiOPc) is deposited by molecular beam epitaxy as a seed layer for atomic layer deposition (ALD) of Al2O3 on WSe2. TiOPc molecules are arranged in a flat monolayer with 4-fold symmetry as measured by scanning tunneling microscopy. ALD pulses of trimethyl aluminum and H2O nucleate on the TiOPc, resulting in a uniform deposition of Al2O3, as confirmed by atomic force microscopy and cross-sectional transmission electron microscopy. The field-effect transistors (FETs) formed using this process have a leakage current of 0.046 pA/μm(2) at 1 V gate bias with 3.0 nm equivalent oxide thickness, which is a lower leakage current than prior reports. The n-branch of the FET yielded a subthreshold swing of 80 mV/decade. PMID:27305595

  18. Characterization of spin-orbit coupling in gated wire structures using Al2O3/In0.75Ga0.25As/In0.75Al0.25As inverted heterojunctions

    NASA Astrophysics Data System (ADS)

    Ohori, Takahiro; Akabori, Masashi; Hidaka, Shiro; Yamada, Syoji

    2016-10-01

    Gated parallel wire structures obtained from inverted-modulation-doped heterojunctions made of high-In-content metamorphic InGaAs/InAlAs were investigated. The narrowest wire width was found to be ˜190 nm made using electron beam lithography and reactive ion etching. Magneto-transport was measured at low temperatures. Weak anti-localization and suppression with applied negative gate voltages were observed in low-mobility wide wires (1360 nm), which were considered for a two-dimensional system. The dependence on the gate voltage of spin-orbit coupling parameters was also obtained by fitting. The parameters decreased as the negative gate voltages increased. The trend might originate not from the electron system at the InGaAs/InAlAs interface but from the other electron system accumulated at the Al2O3/InGaAs interface, which can also contribute to conductivity. In high-mobility narrow wires (190 nm), which are close to a one-dimensional system, weak anti-localization peaks were still observed, indicating strong spin-orbit coupling. In addition, the critical widths of wires corresponding to zero conductance were estimated to be <100 nm. Therefore, our metamorphic modulation doped heterojunctions seem suitable for smaller spin-FETs.

  19. The impact of ultrathin Al2O3 films on the electrical response of p-Ge/Al2O3/HfO2/Au MOS structures

    NASA Astrophysics Data System (ADS)

    Botzakaki, M. A.; Skoulatakis, G.; Kennou, S.; Ladas, S.; Tsamis, C.; Georga, S. N.; Krontiras, C. A.

    2016-09-01

    It is well known that the most critical issue in Ge CMOS technology is the successful growth of high-k gate dielectrics on Ge substrates. The high interface quality of Ge/high-k dielectric is connected with advanced electrical responses of Ge based MOS devices. Following this trend, atomic layer deposition deposited ultrathin Al2O3 and HfO2 films were grown on p-Ge. Al2O3 acts as a passivation layer between p-Ge and high-k HfO2 films. An extensive set of p-Ge/Al2O3/HfO2 structures were fabricated with Al2O3 thickness ranging from 0.5 nm to 1.5 nm and HfO2 thickness varying from 2.0 nm to 3.0 nm. All structures were characterized by x-ray photoelectron spectroscopy (XPS) and AFM. XPS analysis revealed the stoichiometric growth of both films in the absence of Ge sub-oxides between p-Ge and Al2O3 films. AFM analysis revealed the growth of smooth and cohesive films, which exhibited minimal roughness (~0.2 nm) comparable to that of clean bare p-Ge surfaces. The electrical response of all structures was analyzed by C-V, G-V, C-f, G-f and J-V characteristics, from 80 K to 300 K. It is found that the incorporation of ultrathin Al2O3 passivation layers between p-Ge and HfO2 films leads to superior electrical responses of the structures. All structures exhibit well defined C-V curves with parasitic effects, gradually diminishing and becoming absent below 170 K. D it values were calculated at each temperature, using both Hill-Coleman and Conductance methods. Structures of p-Ge/0.5 nm Al2O3/2.0 nm HfO2/Au, with an equivalent oxide thickness (EOT) equal to 1.3 nm, exhibit D it values as low as ~7.4  ×  1010 eV-1 cm-2. To our knowledge, these values are among the lowest reported. J-V measurements reveal leakage currents in the order of 10-1 A cm-2, which are comparable to previously published results for structures with the same EOT. A complete mapping of the energy distribution of D its into the energy bandgap of p-Ge, from the valence band

  20. The impact of ultrathin Al2O3 films on the electrical response of p-Ge/Al2O3/HfO2/Au MOS structures

    NASA Astrophysics Data System (ADS)

    Botzakaki, M. A.; Skoulatakis, G.; Kennou, S.; Ladas, S.; Tsamis, C.; Georga, S. N.; Krontiras, C. A.

    2016-09-01

    It is well known that the most critical issue in Ge CMOS technology is the successful growth of high-k gate dielectrics on Ge substrates. The high interface quality of Ge/high-k dielectric is connected with advanced electrical responses of Ge based MOS devices. Following this trend, atomic layer deposition deposited ultrathin Al2O3 and HfO2 films were grown on p-Ge. Al2O3 acts as a passivation layer between p-Ge and high-k HfO2 films. An extensive set of p-Ge/Al2O3/HfO2 structures were fabricated with Al2O3 thickness ranging from 0.5 nm to 1.5 nm and HfO2 thickness varying from 2.0 nm to 3.0 nm. All structures were characterized by x-ray photoelectron spectroscopy (XPS) and AFM. XPS analysis revealed the stoichiometric growth of both films in the absence of Ge sub-oxides between p-Ge and Al2O3 films. AFM analysis revealed the growth of smooth and cohesive films, which exhibited minimal roughness (~0.2 nm) comparable to that of clean bare p-Ge surfaces. The electrical response of all structures was analyzed by C–V, G–V, C–f, G–f and J–V characteristics, from 80 K to 300 K. It is found that the incorporation of ultrathin Al2O3 passivation layers between p-Ge and HfO2 films leads to superior electrical responses of the structures. All structures exhibit well defined C–V curves with parasitic effects, gradually diminishing and becoming absent below 170 K. D it values were calculated at each temperature, using both Hill–Coleman and Conductance methods. Structures of p-Ge/0.5 nm Al2O3/2.0 nm HfO2/Au, with an equivalent oxide thickness (EOT) equal to 1.3 nm, exhibit D it values as low as ~7.4  ×  1010 eV‑1 cm‑2. To our knowledge, these values are among the lowest reported. J–V measurements reveal leakage currents in the order of 10–1 A cm‑2, which are comparable to previously published results for structures with the same EOT. A complete mapping of the energy distribution of D its into the energy bandgap of p-Ge, from

  1. Transparent and flexible capacitors based on nanolaminate Al2O3/TiO2/Al2O3

    NASA Astrophysics Data System (ADS)

    Zhang, Guozhen; Wu, Hao; Chen, Chao; Wang, Ti; Yue, Jin; Liu, Chang

    2015-02-01

    Transparent and flexible capacitors based on nanolaminate Al2O3/TiO2/Al2O3 dielectrics have been fabricated on indium tin oxide-coated polyethylene naphthalate substrates by atomic layer deposition. A capacitance density of 7.8 fF/μm2 at 10 KHz was obtained, corresponding to a dielectric constant of 26.3. Moreover, a low leakage current density of 3.9 × 10-8 A/cm2 at 1 V has been realized. Bending test shows that the capacitors have better performances in concave conditions than in convex conditions. The capacitors exhibit an average optical transmittance of about 70% in visible range and thus open the door for applications in transparent and flexible integrated circuits.

  2. Transparent and flexible capacitors based on nanolaminate Al2O3/TiO2/Al2O3.

    PubMed

    Zhang, Guozhen; Wu, Hao; Chen, Chao; Wang, Ti; Yue, Jin; Liu, Chang

    2015-01-01

    Transparent and flexible capacitors based on nanolaminate Al2O3/TiO2/Al2O3 dielectrics have been fabricated on indium tin oxide-coated polyethylene naphthalate substrates by atomic layer deposition. A capacitance density of 7.8 fF/μm(2) at 10 KHz was obtained, corresponding to a dielectric constant of 26.3. Moreover, a low leakage current density of 3.9 × 10(-8) A/cm(2) at 1 V has been realized. Bending test shows that the capacitors have better performances in concave conditions than in convex conditions. The capacitors exhibit an average optical transmittance of about 70% in visible range and thus open the door for applications in transparent and flexible integrated circuits.

  3. Enhanced carrier mobility of multilayer MoS2 thin-film transistors by Al2O3 encapsulation

    NASA Astrophysics Data System (ADS)

    Kim, Seong Yeoul; Park, Seonyoung; Choi, Woong

    2016-10-01

    We report the effect of Al2O3 encapsulation on the carrier mobility and contact resistance of multilayer MoS2 thin-film transistors by statistically investigating 70 devices with SiO2 bottom-gate dielectric. After Al2O3 encapsulation by atomic layer deposition, calculation based on Y-function method indicates that the enhancement of carrier mobility from 24.3 cm2 V-1 s-1 to 41.2 cm2 V-1 s-1 occurs independently from the reduction of contact resistance from 276 kΩ.μm to 118 kΩ.μm. Furthermore, contrary to the previous literature, we observe a negligible effect of thermal annealing on contact resistance and carrier mobility during the atomic layer deposition of Al2O3. These results demonstrate that Al2O3 encapsulation is a useful method of improving the carrier mobility of multilayer MoS2 transistors, providing important implications on the application of MoS2 and other two-dimensional materials into high-performance transistors.

  4. Epitaxial Al2O3 capacitors for low microwave loss superconducting quantum circuits

    NASA Astrophysics Data System (ADS)

    Cho, K.-H.; Patel, U.; Podkaminer, J.; Gao, Y.; Folkman, C. M.; Bark, C. W.; Lee, S.; Zhang, Y.; Pan, X. Q.; McDermott, R.; Eom, C. B.

    2013-10-01

    We have characterized the microwave loss of high-Q parallel plate capacitors fabricated from thin-film Al/Al2O3/Re heterostructures on (0001) Al2O3 substrates. The superconductor-insulator-superconductor trilayers were grown in situ in a hybrid deposition system: the epitaxial Re base and polycrystalline Al counterelectrode layers were grown by sputtering, while the epitaxial Al2O3 layer was grown by pulsed laser deposition. Structural analysis indicates a highly crystalline epitaxial Al2O3 layer and sharp interfaces. The measured intrinsic (low-power, low-temperature) quality factor of the resonators is as high as 3 × 104. These results indicate that low-loss grown Al2O3 is an attractive candidate dielectric for high-fidelity superconducting qubit circuits.

  5. Tensile Behavior of Al2o3/feal + B and Al2o3/fecraly Composites

    NASA Technical Reports Server (NTRS)

    Draper, S. L.; Eldridge, J. I.; Aiken, B. J. M.

    1995-01-01

    The feasibility of Al2O3/FeAl + B and Al2O3/FeCrAlY composites for high-temperature applications was assessed. The major emphasis was on tensile behavior of both the monolithics and composites from 298 to 1100 K. However, the study also included determining the chemical compatibility of the composites, measuring the interfacial shear strengths, and investigating the effect of processing on the strength of the single-crystal Al2O3 fibers. The interfacial shear strengths were low for Al203/FeAl + B and moderate to high for Al203/FeCrAlY. The difference in interfacial bond strengths between the two systems affected the tensile behavior of the composites. The strength of the Al203 fiber was significantly degraded after composite processing for both composite systems and resulted in poor composite tensile properties. The ultimate tensile strength (UTS) values of the composites could generally be predicted with either rule of mixtures (ROM) calculations or existing models when using the strength of the etched-out fiber. The Al2O3/FeAl + B composite system was determined to be unfeasible due to poor interfacial shear strengths and a large mismatch in coefficient of thermal expansion (CTE). Development of the Al2O3/FeCrAlY system would require an effective diffusion barrier to minimize the fiber strength degradation during processing and elevated temperature service.

  6. Growth and characterization of Al2O3 films on fluorine functionalized epitaxial graphene

    NASA Astrophysics Data System (ADS)

    Robinson, Zachary R.; Jernigan, Glenn G.; Wheeler, Virginia D.; Hernández, Sandra C.; Eddy, Charles R.; Mowll, Tyler R.; Ong, Eng Wen; Ventrice, Carl A.; Geisler, Heike; Pletikosic, Ivo; Yang, Hongbo; Valla, Tonica

    2016-08-01

    Intelligent engineering of graphene-based electronic devices on SiC(0001) requires a better understanding of processes used to deposit gate-dielectric materials on graphene. Recently, Al2O3 dielectrics have been shown to form conformal, pinhole-free thin films by functionalizing the top surface of the graphene with fluorine prior to atomic layer deposition (ALD) of the Al2O3 using a trimethylaluminum (TMA) precursor. In this work, the functionalization and ALD-precursor adsorption processes have been studied with angle-resolved photoelectron spectroscopy, low energy electron diffraction, and X-ray photoelectron spectroscopy. It has been found that the functionalization process has a negligible effect on the electronic structure of the graphene, and that it results in a twofold increase in the adsorption of the ALD-precursor. In situ TMA-dosing and XPS studies were also performed on three different Si(100) substrates that were terminated with H, OH, or dangling Si-bonds. This dosing experiment revealed that OH is required for TMA adsorption. Based on those data along with supportive in situ measurements that showed F-functionalization increases the amount of oxygen (in the form of adsorbed H2O) on the surface of the graphene, a model for TMA-adsorption on graphene is proposed that is based on a reaction of a TMA molecule with OH.

  7. High Temperature Mechanical Characterization and Analysis of Al2O3 /Al2O3 Composition

    NASA Technical Reports Server (NTRS)

    Gyekenyesi, John Z.; Jaskowiak, Martha H.

    1999-01-01

    Sixteen ply unidirectional zirconia coated single crystal Al2O3 fiber reinforced polycrystalline Al2O3 was tested in uniaxial tension at temperatures to 1400 C in air. Fiber volume fractions ranged from 26 to 31%. The matrix has primarily open porosity of approximately 40%. Theories for predicting the Young's modulus, first matrix cracking stress, and ultimate strength were applied and evaluated for suitability in predicting the mechanical behavior of Al2O3/Al2O3 composites. The composite exhibited pseudo tough behavior (increased area under the stress/strain curve relative to monolithic alumina) from 22 to 1400 C. The rule-of-mixtures provides a good estimate of the Young's modulus of the composite using the constituent properties from room temperature to approximately 1200 C for short term static tensile tests in air. The ACK theory provides the best approximation of the first matrix cracking stress while accounting for residual stresses at room temperature. Difficulties in determining the fiber/matrix interfacial shear stress at high temperatures prevented the accurate prediction of the first matrix cracking stress above room temperature. The theory of Cao and Thouless, based on Weibull statistics, gave the best prediction for the composite ultimate tensile strength.

  8. Controlling the electronic properties of SWCNT FETs via modification of the substrate surface prior to atomic layer deposition of 10 nm thick Al2O3 film

    NASA Astrophysics Data System (ADS)

    Kim, Joonsung; Yoon, Jangyeol; Na, Junhong; Yee, Seongmin; Kim, Gyu Tae; Ha, Jeong Sook

    2013-11-01

    We demonstrate the controllability of the electronic transport properties of single-walled carbon nanotube (SWCNT) field effect transistors (FETs) via the use of 10 nm thick atomic-layer-deposited aluminum oxide (Al2O3) gate dielectric films, where the substrate surfaces were modified with differently functionalized self-assembled monolayers (SAMs) prior to their growth, namely SAMs with hydrophobic (-CH3) or hydrophilic (-OH) groups. Al2O3 grown on a hydrophilic surface causes the SWCNT FETs to keep their intrinsic p-type transfer characteristics by alleviating the electron-doping effect originating from defects in the Al2O3 film. However, the SAM with methyl groups increases the defect density of the Al2O3 film, enhancing the n-type transfer characteristics and inducing ambipolar to n-type behavior in the SWCNT FETs. In this work, we find clues about the distribution of charged defects in the Al2O3 film, which strongly influences the transfer characteristics of the SWCNT FETs, by measuring the thickness-dependent flat band voltages.

  9. Enhanced ZnO Thin-Film Transistor Performance Using Bilayer Gate Dielectrics.

    PubMed

    Alshammari, Fwzah H; Nayak, Pradipta K; Wang, Zhenwei; Alshareef, Husam N

    2016-09-01

    We report ZnO TFTs using Al2O3/Ta2O5 bilayer gate dielectrics grown by atomic layer deposition. The saturation mobility of single layer Ta2O5 dielectric TFT was 0.1 cm(2) V(-1) s(-1), but increased to 13.3 cm(2) V(-1) s(-1) using Al2O3/Ta2O5 bilayer dielectric with significantly lower leakage current and hysteresis. We show that point defects present in ZnO film, particularly VZn, are the main reason for the poor TFT performance with single layer dielectric, although interfacial roughness scattering effects cannot be ruled out. Our approach combines the high dielectric constant of Ta2O5 and the excellent Al2O3/ZnO interface quality, resulting in improved device performance.

  10. Enhanced ZnO Thin-Film Transistor Performance Using Bilayer Gate Dielectrics.

    PubMed

    Alshammari, Fwzah H; Nayak, Pradipta K; Wang, Zhenwei; Alshareef, Husam N

    2016-09-01

    We report ZnO TFTs using Al2O3/Ta2O5 bilayer gate dielectrics grown by atomic layer deposition. The saturation mobility of single layer Ta2O5 dielectric TFT was 0.1 cm(2) V(-1) s(-1), but increased to 13.3 cm(2) V(-1) s(-1) using Al2O3/Ta2O5 bilayer dielectric with significantly lower leakage current and hysteresis. We show that point defects present in ZnO film, particularly VZn, are the main reason for the poor TFT performance with single layer dielectric, although interfacial roughness scattering effects cannot be ruled out. Our approach combines the high dielectric constant of Ta2O5 and the excellent Al2O3/ZnO interface quality, resulting in improved device performance. PMID:27553091

  11. Dependence of electrostatic potential distribution of Al2O3/Ge structure on Al2O3 thickness

    NASA Astrophysics Data System (ADS)

    Wang, Xiaolei; Xiang, Jinjuan; Wang, Wenwu; Zhao, Chao; Zhang, Jing

    2016-09-01

    Electrostatic potential distribution of Al2O3/Ge structure is investigated vs. Al2O3 thickness by X-ray photoelectron spectroscopy (XPS). The electrostatic potential distribution is found to be Al2O3 thickness dependent. This interesting phenomenon is attributed to the appearance of gap states on Al2O3 surface (GSAl2O3) and its higher charge neutrality level (CNL) compared with the CNL of gap states at Al2O3/Ge interface (GSAl2O3/Ge), leading to electron transfer from GSAl2O3 to GSAl2O3/Ge. In the case of thicker Al2O3, fewer electrons transfer from GSAl2O3 to GSAl2O3/Ge, resulting in a larger potential drop across Al2O3 and XPS results.

  12. Atomic-layer-deposited Al2O3 thin films with thin SiO2 layers grown by in situ O3 oxidation

    NASA Astrophysics Data System (ADS)

    Kim, Seong Keun; Hwang, Cheol Seong

    2004-08-01

    The growth, thermal annealing behaviors, and electrical properties of Al2O3 thin films grown by atomic layer deposition (ALD) on bare (100)Si and various oxidized Si wafers, by in situ O3 oxidation at 400°C and ex situ rapid thermal annealing (RTA) under O2 atmosphere at 900°C, were investigated. The ALD process was performed using Al(CH3)3 and high concentration of O3(400gm3). The high oxidation potential of O3 oxidized the Si surface at a very early stage of film growth and eliminated the incubation period even on a bare Si surface. The as-grown Al2O3 films had excess oxygen in the films, which diffused to the film Si interface and increased the interfacial layer by oxidizing the Si substrates during postannealing. The Al2O3 films grown on a bare Si substrate had the highest concentration of excess oxygen which resulted in the largest increase in the interfacial layer thickness during postannealing. As a result, the initial oxidation of the Si wafer did not significantly decrease the capacitance density compared to the films grown on a nonoxidized Si wafer at the as-deposited and postannealed states. Therefore, the Al2O3 layers grown using a high concentration of O3 oxidant on the in situ O3 oxidized Si wafers showed real high-k gate dielectric performance although the dielectric constants of the Al2O3 films were rather small (˜9) compared to other high-k gate dielectric films.

  13. Effects of ozone post deposition treatment on interfacial and electrical characteristics of atomic-layer-deposited Al2O3 and HfO2 films on GaSb substrates

    NASA Astrophysics Data System (ADS)

    Zhao, Lianfeng; Tan, Zhen; Wang, Jing; Xu, Jun

    2014-01-01

    Atomic-layer-deposited Al2O3 and HfO2 films on GaSb substrates were treated by in-situ ozone post deposition treatment (PDT). The effects of ozone PDT on the interfacial and electrical properties of Al2O3 and HfO2 gate dielectric films on GaSb substrates were investigated carefully. It is found that the dielectric quality and the interfacial properties of the Al2O3 and HfO2 films are improved by ozone PDT. After in-situ ozone PDT for 5 min, the Al2O3 and HfO2 films on GaSb substrates exhibit improved electrical and interfacial properties, such as reduced frequency dispersion, gate leakage current, border traps and interface traps. Interface trap density is reduced by ∼24% for the Al2O3/GaSb stacks and ∼27% for the HfO2/GaSb stacks. In-situ ozone PDT is proved to be a promising technique in improving the quality of high-k gate stacks on GaSb substrates.

  14. Structure, optical properties and thermal stability of Al2O3-WC nanocomposite ceramic spectrally selective solar absorbers

    NASA Astrophysics Data System (ADS)

    Gao, Xiang-Hu; Wang, Cheng-Bing; Guo, Zhi-Ming; Geng, Qing-Fen; Theiss, Wolfgang; Liu, Gang

    2016-08-01

    Traditional metal-dielectric composite coating has found important application in spectrally selective solar absorbers. However, fine metal particles can easily diffuse, congregate, or be oxidized at high temperature, which causes deterioration in the optical properties. In this work, we report a new spectrally selective solar absorber coating, composed of low Al2O3 ceramic volume fraction (Al2O3(L)-WC) layer, high Al2O3 ceramic volume fraction (Al2O3(H)-WC layer) and Al2O3 antireflection layer. The features of our work are: 1) compared with the metal-dielectric composites concept, Al2O3-WC nanocomposite ceramic successfully achieves the all-ceramic concept, which exhibits a high solar absorptance of 0.94 and a low thermal emittance of 0.08, 2) Al2O3 and WC act as filler material and host material, respectively, which are different from traditional concept, 3) Al2O3-WC nanocomposite ceramic solar absorber coating exhibits good thermal stability at 600 °C. In addition, the solar absorber coating is successfully modelled by a commercial optical simulation programme, the result of which agrees with the experimental results.

  15. Electronic transport in InGaAs/Al2O3 nFinFETs

    NASA Astrophysics Data System (ADS)

    Li, Shengwei; Hu, Yaodong; Wu, Yangqing; Huang, Daming; Ye, Peide D.; Li, Ming-Fu

    2014-07-01

    Based on the multiple subbands quasi-ballistic transport theory, we investigate the electronic transport of nano size In0.53Ga0.47As nFinFETs with Al2O3 gate dielectric, emphasizing the saturation current region. 1D mobile charge density and gate capacitance density are introduced for the first time to describe the nano-FinFET transport property under volume inversion. With the extracted effective channel mobility of electrons in the linear region from our experiments, the electron mean free path λ in the channel with the value of 5-9 nm is obtained. With only one fitting parameter α = 0.31 for the critical length l=L{{\\left( \\frac{kT/q}{{{V}_{d}}} \\right)}^{\\alpha }} in the quasi-ballistic transport theory, the calculated drain current can fit all experimental data for various gate voltage V g, source-drain voltage V d, and temperature (240-332 K) in overall very good agreement. The backscattering coefficient r in the saturation region is larger than 0.8, indicating a large room for improvement for the present InGaAs FinFET technology and performance.

  16. Property transformation of graphene with Al2O3 films deposited directly by atomic layer deposition

    NASA Astrophysics Data System (ADS)

    Zheng, Li; Cheng, Xinhong; Cao, Duo; Wang, Zhongjian; Xia, Chao; Yu, Yuehui; Shen, Dashen

    2014-01-01

    Al2O3 films are deposited directly onto graphene by H2O-based atomic layer deposition (ALD), and the films are pinhole-free and continuously cover the graphene surface. The growth process of Al2O3 films does not introduce any detective defects in graphene, suppresses the hysteresis effect and tunes the graphene doping to n-type. The self-cleaning of ALD growth process, together with the physically absorbed H2O and oxygen-deficient ALD environment consumes OH- bonds, suppresses the p-doping of graphene, shifts Dirac point to negative gate bias and enhances the electron mobility.

  17. Hydrogen bonds in Al2O3 as dissipative two-level systems in superconducting qubits

    PubMed Central

    Gordon, Luke; Abu-Farsakh, Hazem; Janotti, Anderson; Van de Walle, Chris G.

    2014-01-01

    Dissipative two-level systems (TLS) have been a long-standing problem in glassy solids over the last fifty years, and have recently gained new relevance as sources of decoherence in quantum computing. Resonant absorption by TLSs in the dielectric poses a serious limitation to the performance of superconducting qubits; however, the microscopic nature of these systems has yet to be established. Based on first-principles calculations, we propose that hydrogen impurities in Al2O3 are the main source of TLS resonant absorption. Hydrogen is an ubiquitous impurity and can easily incorporate in Al2O3. We find that interstitial H in Al2O3 forms a hydrogen bond (O-H…O). At specific O-O distances, consistent with bond lengths found in amorphous Al2O3 or near Al2O3 surfaces or interfaces, the H atom feels a double well. Tunneling between two symmetric positions gives rise to resonant absorption in the range of 10 GHz, explaining the experimental observations. We also calculate the expected qubit-TLS coupling and find it to lie between 16 and 20 MHz, consistent with experimental measurements. PMID:25534108

  18. Growth, Quantitative Growth Analysis, and Applications of Graphene on γ-Al2O3 catalysts

    PubMed Central

    Park, Jaehyun; Lee, Joohwi; Choi, Jung-Hae; Hwang, Do Kyung; Song, Yong-Won

    2015-01-01

    The possibilities offered by catalytic γ-Al2O3 substrates are explored, and the mechanism governing graphene formation thereon is elucidated using both numerical simulations and experiments. The growth scheme offers metal-free synthesis at low temperature, grain-size customization, large-area uniformity of electrical properties, single-step preparation of graphene/dielectric structures, and readily detachable graphene. We quantify based on thermodynamic principles the activation energies associated with graphene nucleation/growth on γ-Al2O3, verifying the low physical and chemical barriers. Importantly, we derive a universal equation governing the adsorption-based synthesis of graphene over a wide range of temperatures in both catalytic and spontaneous growth regimes. Experimental results support the equation, highlighting the catalytic function of γ-Al2O3 at low temperatures. The synthesized graphene is manually incorporated as a ‘graphene sticker’ into an ultrafast mode-locked laser. PMID:26137994

  19. Preparation and characterization of Ppy/Al 2O 3/Al used as a solid-state capacitor

    NASA Astrophysics Data System (ADS)

    Tsai, Ming-Liao; Chen, Pei-Jiun; Do, Jing-Shan

    The characteristics of a solid-state capacitor based on Ppy (polypyrrole)/Al 2O 3/Al prepared by the constant-current method are investigated. The surface composition of aluminum (Al) foil analyzed to by electron spectroscopy for chemical analysis (ESCA) is found to be AlO 2- when the native oxide on the Al foil is etched by 0.1 M NaOH. Three stages are defined from the relationship between the potential and the electrolysis time in simultaneously preparing the dielectric layer (Al 2O 3) and the conducting polymer (Ppy) on Al foil etched with 0.1 M NaOH. The experimental results indicate that only stage one, i.e. the formation of Al 2O 3, occurs in the preparation of Ppy/Al 2O 3/Al at a current density greater than 0.9 mA cm -2. A higher concentration of pyrrole enhances the nucleation of Ppy within the pores of Al 2O 3 such that the period of the first stage decrease and the second stage of the propagation of Ppy is increased. The leakage current of Ppy/Al 2O 3/Al rises from 0.009 to 0.405 μA cm -2 with increase in the concentration of pyrrole in preparing Ppy/Al 2O 3/Al from 0.05 to 0.15 M. Raising the cut-off potential for preparing Ppy/Al 2O 3/Al from 20 to 60 V increases the thickness of Al 2O 3 and lowers the capacity of Ppy/Al 2O 3/Al from 478.5 to 174.2 nF cm -2.

  20. Space-charge-controlled field emission model of current conduction through Al2O3 films

    NASA Astrophysics Data System (ADS)

    Hiraiwa, Atsushi; Matsumura, Daisuke; Kawarada, Hiroshi

    2016-02-01

    This study proposes a model for current conduction in metal-insulator-semiconductor (MIS) capacitors, assuming the presence of two sheets of charge in the insulator, and derives analytical formulae of field emission (FE) currents under both negative and positive bias. Since it is affected by the space charge in the insulator, this particular FE differs from the conventional FE and is accordingly named the space-charge-controlled (SCC) FE. The gate insulator of this study was a stack of atomic-layer-deposition Al2O3 and underlying chemical SiO2 formed on Si substrates. The current-voltage (I-V) characteristics simulated using the SCC-FE formulae quantitatively reproduced the experimental results obtained by measuring Au- and Al-gated Al2O3/SiO2 MIS capacitors under both biases. The two sheets of charge in the Al2O3 films were estimated to be positive and located at a depth of greater than 4 nm from the Al2O3/SiO2 interface and less than 2 nm from the gate. The density of the former is approximately 1 × 1013 cm-2 in units of electronic charge, regardless of the type of capacitor. The latter forms a sheet of dipoles together with image charges in the gate and hence causes potential jumps of 0.4 V and 1.1 V in the Au- and Al-gated capacitors, respectively. Within a margin of error, this sheet of dipoles is ideally located at the gate/Al2O3 interface and effectively reduces the work function of the gate by the magnitude of the potential jumps mentioned above. These facts indicate that the currents in the Al2O3/SiO2 MIS capacitors are enhanced as compared to those in ideal capacitors and that the currents in the Al-gated capacitors under negative bias (electron emission from the gate) are more markedly enhanced than those in the Au-gated capacitors. The larger number of gate-side dipoles in the Al-gated capacitors is possibly caused by the reaction between the Al and Al2O3, and therefore gate materials that do not react with underlying gate insulators should be chosen

  1. Electrical characteristics of SrTiO3/Al2O3 laminated film capacitors

    NASA Astrophysics Data System (ADS)

    Peng, Yong; Yao, Manwen; Chen, Jianwen; Xu, Kaien; Yao, Xi

    2016-07-01

    The electrical characteristics of SrTiO3/Al2O3 (160 nm up/90 nm down) laminated film capacitors using the sol-gel process have been investigated. SrTiO3 is a promising and extensively studied high-K dielectric material, but its leakage current property is poor. SrTiO3/Al2O3 laminated films can effectively suppress the demerits of pure SrTiO3 films under low electric field, but the leakage current value reaches to 0.1 A/cm2 at higher electric field (>160 MV/m). In this study, a new approach was applied to reduce the leakage current and improve the dielectric strength of SrTiO3/Al2O3 laminated films. Compared to laminated films with Au top electrodes, dielectric strength of laminated films with Al top electrodes improves from 205 MV/m to 322 MV/m, simultaneously the leakage current maintains the same order of magnitude (10-4 A/cm2) until the breakdown occurs. The above electrical characteristics are attributed to the anodic oxidation reaction in origin, which can repair the defects of laminated films at higher electric field. The anodic oxidation reactions have been confirmed by the corresponding XPS measurement and the cross sectional HRTEM analysis. This work provides a new approach to fabricate dielectrics with high dielectric strength and low leakage current.

  2. Swift ion irradiation effect on high-k ZrO2- and Al2O3-based MOS devices

    NASA Astrophysics Data System (ADS)

    Rao, Ashwath; Chaurasia, Priyanka; Singh, B. R.

    2016-03-01

    This paper describes the heavy ion-induced effects on the electrical characteristics of reactively sputtered ZrO2 and Al2O3 high-k gate oxides deposited in argon plus nitrogen containing plasma. Radiation-induced degradation of sputtered high-k dielectric ZrO2/Si and Al2O3/Si interface was studied using 45 MeV Li3+ ions. The devices were irradiated with Li3+ ions at various fluences ranging from 5 × 109 to 5 × 1012 ions/cm2. Capacitance-voltage and current-voltage characteristics were used for electrical characterization. Shift in flat band voltage towards negative value was observed in devices after exposure to ion radiation. Post-deposition annealing effect on the electrical behavior of high-k/Si interface was also investigated. The annealed devices showed better electrical and reliability characteristics. Different device parameters such as flat band voltage, leakage current, interface defect density and oxide-trapped charge have been extracted.The surface morphology and roughness values for films deposited in nitrogen containing plasma before and after ion radiation are extracted from Atomic Force Microscopy.

  3. Investigations of AlGaN/GaN MOS-HEMT with Al2O3 deposition by ultrasonic spray pyrolysis method

    NASA Astrophysics Data System (ADS)

    Chou, Bo-Yi; Hsu, Wei-Chou; Liu, Han-Yin; Lee, Ching-Sung; Wu, Yu-Sheng; Sun, Wen-Ching; Wei, Sung-Yen; Yu, Sheng-Min; Chiang, Meng-Hsueh

    2015-01-01

    This work investigates Al2O3/AlGaN/GaN metal-oxide-semiconductor high electron mobility transistors (MOS-HEMTs) grown on SiC substrate by using the non-vacuum ultrasonic spray pyrolysis deposition (USPD) method. The Al2O3 was deposited as gate dielectric and surface passivation simultaneously to effectively suppress gate leakage current, enhance output current density, reduce RF drain current collapse, and improve temperature-dependent stabilities performance. The present MOS-HEMT design has shown improved device performances with respect to a Schottky-gate HEMT, including drain-source saturation current density at zero gate bias (IDSS: 337.6 mA mm-1 → 462.9 mA mm-1), gate-voltage swing (GVS: 1.55 V → 2.92 V), two-terminal gate-drain breakdown voltage (BVGD: -103.8 V → -183.5 V), unity-gain cut-off frequency (fT: 11.3 GHz → 17.7 GHz), maximum oscillation frequency (fmax: 14.2 GHz → 19.1 GHz), and power added effective (P.A.E.: 25.1% → 43.6%). The bias conditions for measuring fT and fmax of the studied MOS-HEMT (Schottky-gate HEMT) are VGS = -2.5 (-2) V and VDS = 7 V. The corresponding VGS and VDS biases are -2.5 (-2) V and 15 V for measuring the P.A.E. characteristic. Moreover, small capacitance-voltage (C-V) hysteresis is obtained in the Al2O3-MOS structure by using USPD. Temperature-dependent characteristics of the present designs at 300-480 K are also studied.

  4. AlN and Al oxy-nitride gate dielectrics for reliable gate stacks on Ge and InGaAs channels

    NASA Astrophysics Data System (ADS)

    Guo, Y.; Li, H.; Robertson, J.

    2016-05-01

    AlN and Al oxy-nitride dielectric layers are proposed instead of Al2O3 as a component of the gate dielectric stacks on higher mobility channels in metal oxide field effect transistors to improve their positive bias stress instability reliability. It is calculated that the gap states of nitrogen vacancies in AlN lie further away in energy from the semiconductor band gap than those of oxygen vacancies in Al2O3, and thus AlN might be less susceptible to charge trapping and have a better reliability performance. The unfavourable defect energy level distribution in amorphous Al2O3 is attributed to its larger coordination disorder compared to the more symmetrically bonded AlN. Al oxy-nitride is also predicted to have less tendency for charge trapping.

  5. Scaling and carrier transport behavior of buried-channel In0.7Ga0.3As MOSFETs with Al2O3 insulator

    NASA Astrophysics Data System (ADS)

    Kim, Taewoo; Kim, Dae-Hyun

    2015-09-01

    In this paper, we investigate the scaling and carrier transport behavior of sub-100 nm In0.7Ga0.3As buried-channel metal-oxide-semiconductor field-effect transistors (MOSFETs) with Al2O3 as gate dielectric. The device combines a 3-nm Al2O3 layer grown by atomic-layer-deposition (ALD) and a 13-nm In0.52Al0.48As insulator grown by molecular-beam-epitaxy (MBE). Our long channel device with Lg = 200 nm exhibits excellent subthreshold characteristics, such as subthreshold-swing (S) of 68 mV/decade at VDS = 0.5 V, indicating a very good interface quality between Al2O3 and In0.52Al0.48As. In addition, a short-channel device with Lg = 60 nm maintains electrostatic integrity of the device, such as subthreshold-swing (S) = 90 mV/decade and drain-induced-barrier-lowering (DIBL) = 100 mV/V at VDS = 0.5 V. We show well-behaved electrostatic scaling behavior that follows a modified FD-SOI MOSFET model. Our experimental and theoretical research suggest that further device optimization in the form of a self-aligned contact structure and aggressive EOT scaling would lead to high-performance III-V MOSFETs for multiple types of applications.

  6. Fast neutron detection with Al 2O 3 thermoluminescence dosimeter

    NASA Astrophysics Data System (ADS)

    Ranogajec-Komor, Maria; Osvay, Margit; Dvornik, Igor; Biró, Tamàs

    1983-07-01

    The technique of thermoluminescent (TL) dosimeter activation can be used to detect any radiation making TL dosimeters radioactive. In the experiment discussed in this paper Al2O3:Mg, Y TL dosimeters were irradiated by cyclotron neutrons with 5±1 MeV mean energy and by accompanying gamma rays. The gamma and the fast neutron component can be separately measured by the same dosimeter. Because of low neutron sensitivity of Al2O3 the gamma dose can be determined by the first TL reading while the 27Al(n, α)24 Na reaction provides the possibility of fast neutron detection by the subsequent reading of thermoluminescence induced in the TL material by the decay of 24Na.

  7. Structural evolution and the control of defects in atomic layer deposited HfO2-Al2O3 stacked films on GaAs.

    PubMed

    Kang, Yu-Seon; Kim, Dae-Kyoung; Jeong, Kwang-Sik; Cho, Mann-Ho; Kim, Chung Yi; Chung, Kwun-Bum; Kim, Hyoungsub; Kim, Dong-Chan

    2013-03-01

    The structural characteristics and interfacial reactions of bilayered dielectric stacks of 3 nm HfO2/2 nm Al2O3 and 3 nm Al2O3/2 nm HfO2 on GaAs, prepared by atomic layer deposition (ALD), were examined during film growth and the postannealing process. During the postdeposition annealing (PDA) of the Al2O3/HfO2/GaAs structures at 700 °C, large amounts of Ga oxides were generated between the Al2O3 and HfO2 films as the result of interfacial reactions between interdiffused oxygen impurities and out-diffused atomic Ga. However, in the case of the HfO2/Al2O3/GaAs structures, the presence of an Al2O3 buffer layer effectively blocked the out-diffusion of atomic Ga, thus suppressing the formation of Ga oxide. Microstructural analyses showed that HfO2 films that were deposited on Al2O3/GaAs had completely crystallized during the PDA process, even at 700 °C, because of the Al2O3 diffusion barrier. Capacitance-voltage measurements showed a relatively large frequency dispersion of the Al2O3/HfO2/GaAs structure in accumulation capacitance compared to the HfO2/Al2O3/GaAs structure due to a higher interface state density. Conductance results revealed that the Al2O3 buffer layer on GaAs resulted in a significant reduction in gap states in GaAs. The induced gap state in the Al2O3/HfO2/GaAs structure originated from the out-diffusion of atomic Ga into the HfO2 film. Density functional theory calculations supported this conclusion.

  8. Controlled direct growth of Al2O3-doped HfO2 films on graphene by H2O-based atomic layer deposition.

    PubMed

    Zheng, Li; Cheng, Xinhong; Yu, Yuehui; Xie, Yahong; Li, Xiaolong; Wang, Zhongjian

    2015-02-01

    Graphene has been drawing worldwide attention since its discovery in 2004. In order to realize graphene-based devices, thin, uniform-coverage and pinhole-free dielectric films with high permittivity on top of graphene are required. Here we report the direct growth of Al2O3-doped HfO2 films onto graphene by H2O-based atom layer deposition (ALD). Al2O3-onto-HfO2 stacks benefited the doping of Al2O3 into HfO2 matrices more than HfO2-onto-Al2O3 stacks did due to the micro-molecular property of Al2O3 and the high chemical activity of trimethylaluminum (TMA). Al2O3 acted as a network modifier, maintained the amorphous structure of the film even to 800 °C, and made the film smooth with a root mean square (RMS) roughness of 0.8 nm, comparable to the surface of pristine graphene. The capacitance and the relative permittivity of Al2O3-onto-HfO2 stacks were up to 1.18 μF cm(-2) and 12, respectively, indicating the high quality of Al2O3-doped HfO2 films on graphene. Moreover, the growth process of Al2O3-doped HfO2 films introduced no detective defects into graphene confirmed by Raman measurements. PMID:25519447

  9. Frustration of Negative Capacitance in Al2O3/BaTiO3 Bilayer Structure

    PubMed Central

    Kim, Yu Jin; Park, Min Hyuk; Lee, Young Hwan; Kim, Han Joon; Jeon, Woojin; Moon, Taehwan; Do Kim, Keum; Jeong, Doo Seok; Yamada, Hiroyuki; Hwang, Cheol Seong

    2016-01-01

    Enhancement of capacitance by negative capacitance (NC) effect in a dielectric/ferroelectric (DE/FE) stacked film is gaining a greater interest. While the previous theory on NC effect was based on the Landau-Ginzburg-Devonshire theory, this work adopted a modified formalism to incorporate the depolarization effect to describe the energy of the general DE/FE system. The model predicted that the SrTiO3/BaTiO3 system will show a capacitance boost effect. It was also predicted that the 5 nm-thick Al2O3/150 nm-thick BaTiO3 system shows the capacitance boost effect with no FE-like hysteresis behavior, which was inconsistent with the experimental results; the amorphous-Al2O3/epitaxial-BaTiO3 system showed a typical FE-like hysteresis loop in the polarization – voltage test. This was due to the involvement of the trapped charges at the DE/FE interface, originating from the very high field across the thin Al2O3 layer when the BaTiO3 layer played a role as the NC layer. Therefore, the NC effect in the Al2O3/BaTiO3 system was frustrated by the involvement of reversible interface charge; the highly stored charge by the NC effect of the BaTiO3 during the charging period could not be retrieved during the discharging process because integral part of the polarization charge was retained within the system as a remanent polarization. PMID:26742878

  10. Heating rate effects in simulated liquid Al2O_3

    NASA Astrophysics Data System (ADS)

    van Hoang, Vo

    2006-01-01

    The heating rate effects in simulated liquid Al{2}O{3} have been investigated by Molecular Dynamics (MD) method. Simulations were done in the basic cube under periodic boundary conditions containing 3000 ions with Born-Mayer type pair potentials. The temperature of the system was increasing linearly in time from the zero temperature as T(t)=T0 +γ t, where γ is the heating rate. The heating rate dependence of density and enthalpy of the system was found. Calculations show that static properties of the system such as the coordination number distributions and bond-angle distributions slightly depend on γ . Structure of simulated amorphous Al{2}O{3} model with the real density at the ambient pressure is in good agreement with Lamparter's experimental data. The heating rate dependence of dynamics of the system has been studied through the diffusion constant, mean-squared atomic displacement and comparison of partial radial distribution functions (PRDFs) for 10% most mobile and immobile particles with the corresponding mean ones. Finally, the evolution of diffusion constant of Al and O particles and structure of the system upon heating for the smallest heating rate was studied and presented. And we find that the temperature dependence of self-diffusion constant in the high temperature region shows a crossover to one which can be described well by a power law, D∝ (T-Tc )^γ . The critical temperature Tc is about 3500 K and the exponent γ is close to 0.941 for Al and to 0.925 for O particles. The glass phase transition temperature Tg for the Al{2}O{3} system is at anywhere around 2000 K.

  11. Time-Dependent Negative Capacitance Effects in Al2O3/BaTiO3 Bilayers.

    PubMed

    Kim, Yu Jin; Yamada, Hiroyuki; Moon, Taehwan; Kwon, Young Jae; An, Cheol Hyun; Kim, Han Joon; Kim, Keum Do; Lee, Young Hwan; Hyun, Seung Dam; Park, Min Hyuk; Hwang, Cheol Seong

    2016-07-13

    The negative capacitance (NC) effects in ferroelectric materials have emerged as the possible solution to low-power transistor devices and high-charge-density capacitors. Although the steep switching characteristic (subthreshold swing < sub-60 mV/dec) has been demonstrated in various devices combining the conventional transistors with ferroelectric gates, the actual applications of the NC effects are still some way off owing to the inherent hysteresis problem. This work reinterpreted the hysteretic properties of the NC effects within the time domain and demonstrated that capacitance (charge) boosting could be achieved without the hysteresis from the Al2O3/BaTiO3 bilayer capacitors through short-pulse charging. This work revealed that the hysteresis phenomenon in NC devices originated from the dielectric leakage of the dielectric layer. The suppression of charge injection via the dielectric leakage, which usually takes time, inhibits complete ferroelectric polarization switching during a short pulse time. It was demonstrated that a nonhysteretic NC effect can be achieved only within certain limited time and voltage ranges, but that these are sufficient for critical device applications. PMID:27231754

  12. Studies on the properties of Al2O3:Cr2O3 (50:50) thin film

    NASA Astrophysics Data System (ADS)

    Ponmudi, S.; Sivakumar, R.; Sanjeeviraja, C.

    2016-05-01

    Aluminium oxide (Al2O3) and chromium oxide (Cr2O3) thin films have received great attention of researchers because of their unique properties of corrosion/oxidation resistance and high dielectric constant. In addition, chromium aluminium oxide has been considered as a best candidate for deep-ultraviolet optical masks. In the present work, thin films of Al2O3:Cr2O3 (50:50) were deposited on pre-cleaned microscopic glass substrate by RF magnetron sputtering technique. The substrate temperature and RF power induced changes in structural, surface morphological, compositional and optical properties of the films have been studied.

  13. Al2O3-based nanofluids: a review

    NASA Astrophysics Data System (ADS)

    Sridhara, Veeranna; Satapathy, Lakshmi Narayan

    2011-07-01

    Ultrahigh performance cooling is one of the important needs of many industries. However, low thermal conductivity is a primary limitation in developing energy-efficient heat transfer fluids that are required for cooling purposes. Nanofluids are engineered by suspending nanoparticles with average sizes below 100 nm in heat transfer fluids such as water, oil, diesel, ethylene glycol, etc. Innovative heat transfer fluids are produced by suspending metallic or nonmetallic nanometer-sized solid particles. Experiments have shown that nanofluids have substantial higher thermal conductivities compared to the base fluids. These suspended nanoparticles can change the transport and thermal properties of the base fluid. As can be seen from the literature, extensive research has been carried out in alumina-water and CuO-water systems besides few reports in Cu-water-, TiO2-, zirconia-, diamond-, SiC-, Fe3O4-, Ag-, Au-, and CNT-based systems. The aim of this review is to summarize recent developments in research on the stability of nanofluids, enhancement of thermal conductivities, viscosity, and heat transfer characteristics of alumina (Al2O3)-based nanofluids. The Al2O3 nanoparticles varied in the range of 13 to 302 nm to prepare nanofluids, and the observed enhancement in the thermal conductivity is 2% to 36%.

  14. Specific heat capacity of nanoporous Al2O3

    NASA Astrophysics Data System (ADS)

    Huang, Cong-Liang; Feng, Yan-Hui; Zhang, Xin-Xin; Li, Jing; Wang, Ge

    2013-09-01

    Based on Lindemann's criterion, a specific heat capacity model for nanoporous material was proposed by defining the surface-atom layer, to take the surface atoms and the volume atoms separately into account. The height of the surface-atom layer was determined from the experiment, and results show that only the first layer atoms on the surface should be separately considered for nanoporous Al2O3. The shape factor of the pore was also introduced in the model with values between 2 (for cylindrical pore) and 3 (for spherical pore) to characterize the morphology of the pore. It turns out experimentally that the specific heat capacity of the analyzed nanoporous Al2O3 is much larger than that of the bulk, which can be interpreted as due to the fact that the surface atom plays a more important role than the volume one. And the smaller the radius and/or the larger the porosity, which lead to a larger surface-volume ratio, the larger the specific heat capacity becomes. The nanoporous material could be a better heat storage medium than the corresponding bulk with a much lighter weight, smaller volume but higher heat storage capacity.

  15. Al2O3-based nanofluids: a review

    PubMed Central

    2011-01-01

    Ultrahigh performance cooling is one of the important needs of many industries. However, low thermal conductivity is a primary limitation in developing energy-efficient heat transfer fluids that are required for cooling purposes. Nanofluids are engineered by suspending nanoparticles with average sizes below 100 nm in heat transfer fluids such as water, oil, diesel, ethylene glycol, etc. Innovative heat transfer fluids are produced by suspending metallic or nonmetallic nanometer-sized solid particles. Experiments have shown that nanofluids have substantial higher thermal conductivities compared to the base fluids. These suspended nanoparticles can change the transport and thermal properties of the base fluid. As can be seen from the literature, extensive research has been carried out in alumina-water and CuO-water systems besides few reports in Cu-water-, TiO2-, zirconia-, diamond-, SiC-, Fe3O4-, Ag-, Au-, and CNT-based systems. The aim of this review is to summarize recent developments in research on the stability of nanofluids, enhancement of thermal conductivities, viscosity, and heat transfer characteristics of alumina (Al2O3)-based nanofluids. The Al2O3 nanoparticles varied in the range of 13 to 302 nm to prepare nanofluids, and the observed enhancement in the thermal conductivity is 2% to 36%. PMID:21762528

  16. Effect of Processing Parameters on Thermal Cycling Behavior of Al2O3-Al2O3 Brazed Joints

    NASA Astrophysics Data System (ADS)

    Dandapat, Nandadulal; Ghosh, Sumana; Guha, Bichitra Kumar; Datta, Someswar; Balla, Vamsi Krishna

    2016-06-01

    In the present study, alumina ceramics were active metal brazed at different temperatures ranging from 1163 K to 1183 K (890 °C to 910 °C) using TICUSIL (68.8Ag-26.7Cu-4.5Ti in wt pct) foil as filler alloy of different thicknesses. The brazed joints were subjected to thermal cycling for 100 cycles between 323 K and 873 K (50 °C and 600 °C). The microstructural and elemental composition analysis of the brazed joints were performed by scanning electron microscopy (SEM) and energy dispersive X-ray (EDX) before and after thermal cycling. Helium (He) leak test and brazing strength measurement were also conducted after thermal cycling for 100 cycles. The joint could withstand up to 1 × 10-9 Torr pressure and brazing strength was higher than 20 MPa. The experimental results demonstrated that joints brazed at the higher temperature with thinner filler alloy produced strong Al2O3-Al2O3 joints.

  17. Effect of Processing Parameters on Thermal Cycling Behavior of Al2O3-Al2O3 Brazed Joints

    NASA Astrophysics Data System (ADS)

    Dandapat, Nandadulal; Ghosh, Sumana; Guha, Bichitra Kumar; Datta, Someswar; Balla, Vamsi Krishna

    2016-10-01

    In the present study, alumina ceramics were active metal brazed at different temperatures ranging from 1163 K to 1183 K (890 °C to 910 °C) using TICUSIL (68.8Ag-26.7Cu-4.5Ti in wt pct) foil as filler alloy of different thicknesses. The brazed joints were subjected to thermal cycling for 100 cycles between 323 K and 873 K (50 °C and 600 °C). The microstructural and elemental composition analysis of the brazed joints were performed by scanning electron microscopy (SEM) and energy dispersive X-ray (EDX) before and after thermal cycling. Helium (He) leak test and brazing strength measurement were also conducted after thermal cycling for 100 cycles. The joint could withstand up to 1 × 10-9 Torr pressure and brazing strength was higher than 20 MPa. The experimental results demonstrated that joints brazed at the higher temperature with thinner filler alloy produced strong Al2O3-Al2O3 joints.

  18. Impact of carbon and nitrogen on gate dielectrics in metal-oxide-semiconductor devices

    NASA Astrophysics Data System (ADS)

    Choi, Minseok; Lyons, John; Janotti, Anderson; van de Walle, Chris

    2013-03-01

    Al2O3 and HfO2 are used as alternative gate oxides in CMOS technology. Promising results have been achieved with Al2O3/III-V and HfO2/Si MOS structures, which exhibit relatively low densities of interface states. However, the presence of charge traps and fixed-charge centers near the oxide/semiconductor interface still poses serious limitations in device performance. Native point defects are usually proposed as an explanation; unintentional incorporation of impurities in the gate dielectric during the deposition process has so far received less attention. Using first-principles calculations based on hybrid functionals we investigate the effects of carbon and nitrogen impurities in Al2O3 and HfO2. By analyzing the position of the impurity levels with respect to the III-V and Si band edges, we determine if these impurities can act as charge traps or sources of fixed charge. Our results show that carbon can act as a charge trap and lead to leakage current through the gate dielectric. Nitrogen can act as a source of negative fixed charge, but may be effective in alleviating the problem of charge traps and fixed charges associated with Al, Hf, and O vacancies. This work was supported by the ONR DEFINE MURI program.

  19. Isotope analysis of diamond-surface passivation effect of high-temperature H2O-grown atomic layer deposition-Al2O3 films

    NASA Astrophysics Data System (ADS)

    Hiraiwa, Atsushi; Saito, Tatsuya; Matsumura, Daisuke; Kawarada, Hiroshi

    2015-06-01

    The Al2O3 film formed using an atomic layer deposition (ALD) method with trimethylaluminum as Al precursor and H2O as oxidant at a high temperature (450 °C) effectively passivates the p-type surface conduction (SC) layer specific to a hydrogen-terminated diamond surface, leading to a successful operation of diamond SC field-effect transistors at 400 °C. In order to investigate this excellent passivation effect, we carried out an isotope analysis using D2O instead of H2O in the ALD and found that the Al2O3 film formed at a conventional temperature (100 °C) incorporates 50 times more CH3 groups than the high-temperature film. This CH3 is supposed to dissociate from the film when heated afterwards at a higher temperature (550 °C) and causes peeling patterns on the H-terminated surface. The high-temperature film is free from this problem and has the largest mass density and dielectric constant among those investigated in this study. The isotope analysis also unveiled a relatively active H-exchange reaction between the diamond H-termination and H2O oxidant during the high-temperature ALD, the SC still being kept intact. This dynamic and yet steady H termination is realized by the suppressed oxidation due to the endothermic reaction with H2O. Additionally, we not only observed the kinetic isotope effect in the form of reduced growth rate of D2O-oxidant ALD but found that the mass density and dielectric constant of D2O-grown Al2O3 films are smaller than those of H2O-grown films. This is a new type of isotope effect, which is not caused by the presence of isotopes in the films unlike the traditional isotope effects that originate from the presence of isotopes itself. Hence, the high-temperature ALD is very effective in forming Al2O3 films as a passivation and/or gate-insulation layer of high-temperature-operation diamond SC devices, and the knowledge of the aforementioned new isotope effect will be a basis for further enhancing ALD technologies in general.

  20. Unraveling the Origin of Structural Disorder in High Temperature Transition Al2O3: Structure of θ-Al2O3

    SciTech Connect

    Kovarik, Libor; Bowden, Mark E.; Shi, Dachuan; Washton, Nancy M.; Anderson, Amity; Hu, Jian Z.; Lee, Jaekyoung; Szanyi, Janos; Kwak, Ja Hun; Peden, Charles HF

    2015-09-22

    The crystallography of transition Al2O3 has been extensively studied in the past due to the advantageous properties of the oxide in catalytic and a range of other technological applications. However, existing crystallographic models are insufficient to describe the structure of many important Al2O3 polymorphs due to their highly disordered nature. In this work, we investigate structure and disorder in high-temperature treated transition Al2O3, and provide a structural description for θ-Al2O3 by using a suite of complementary imaging, spectroscopy and quantum calculation techniques. Contrary to current understanding, our high-resolution imaging shows that θ-Al2O3 is a disordered composite phase of at least two different end members. By correlating imaging and spectroscopy results with DFT calculations, we propose a model that describes θ-Al2O3 as a disordered intergrowth of two crystallographic variants at the unit cell level. One variant is based on β-Ga2O3, and the other on a monoclinic phase that is closely-related to δ-Al2O3. The overall findings and interpretations afford new insight into the origin of poor crystallinity in transition Al2O3, and also provide new perspectives on structural complexity that can emerge from intergrowth of closely related structural polymorphs.

  1. Selective modulation of infrared radiation by an Al2O3 particles — liquid crystal system

    NASA Astrophysics Data System (ADS)

    Ibragimov, T. D.; Allakhverdiev, E. A.; Bairamov, G. M.; Imamaliev, A. R.

    2011-07-01

    We have developed a dual-frequency liquid crystal consisting of 4-n-pentyl-4'-cyanobiphenyl (5CB), 4-hexyloxyphenyl-4'-hexyloxy-3-nitrobenzoate (C2), and 4-butyl-4'-(hexyloxyphenyloxycarbonyl)phenyl carbonate (H22). We have measured the frequency dependences of the longitudinal and transverse components of the dielectric constant of the mixture and we have determined the frequency regions of positive and negative dielectric anisotropy. We show that for certain changes in the frequency of the applied electric field while the magnitude of the field remains the same, the transmission region of the Al2O3 particles — dual-frequency liquid crystal system switches from one wavelength to the other. The experimental results are explained by the optical homogeneity of the system in a narrow wavelength interval when the refractive indices of the particle material and the matrix are close, and also by reorientation of the liquid crystal molecules as the frequency of the applied voltage changes.

  2. Radiation endurance in Al2O3 nanoceramics

    PubMed Central

    García Ferré, F.; Mairov, A.; Ceseracciu, L.; Serruys, Y.; Trocellier, P.; Baumier, C.; Kaïtasov, O.; Brescia, R.; Gastaldi, D.; Vena, P.; Beghi, M. G.; Beck, L.; Sridharan, K.; Di Fonzo, F.

    2016-01-01

    The lack of suitable materials solutions stands as a major challenge for the development of advanced nuclear systems. Most issues are related to the simultaneous action of high temperatures, corrosive environments and radiation damage. Oxide nanoceramics are a promising class of materials which may benefit from the radiation tolerance of nanomaterials and the chemical compatibility of ceramics with many highly corrosive environments. Here, using thin films as a model system, we provide new insights into the radiation tolerance of oxide nanoceramics exposed to increasing damage levels at 600 °C –namely 20, 40 and 150 displacements per atom. Specifically, we investigate the evolution of the structural features, the mechanical properties, and the response to impact loading of Al2O3 thin films. Initially, the thin films contain a homogeneous dispersion of nanocrystals in an amorphous matrix. Irradiation induces crystallization of the amorphous phase, followed by grain growth. Crystallization brings along an enhancement of hardness, while grain growth induces softening according to the Hall-Petch effect. During grain growth, the excess mechanical energy is dissipated by twinning. The main energy dissipation mechanisms available upon impact loading are lattice plasticity and localized amorphization. These mechanisms are available in the irradiated material, but not in the as-deposited films. PMID:27653832

  3. Radiation endurance in Al2O3 nanoceramics

    NASA Astrophysics Data System (ADS)

    García Ferré, F.; Mairov, A.; Ceseracciu, L.; Serruys, Y.; Trocellier, P.; Baumier, C.; Kaïtasov, O.; Brescia, R.; Gastaldi, D.; Vena, P.; Beghi, M. G.; Beck, L.; Sridharan, K.; di Fonzo, F.

    2016-09-01

    The lack of suitable materials solutions stands as a major challenge for the development of advanced nuclear systems. Most issues are related to the simultaneous action of high temperatures, corrosive environments and radiation damage. Oxide nanoceramics are a promising class of materials which may benefit from the radiation tolerance of nanomaterials and the chemical compatibility of ceramics with many highly corrosive environments. Here, using thin films as a model system, we provide new insights into the radiation tolerance of oxide nanoceramics exposed to increasing damage levels at 600 °C –namely 20, 40 and 150 displacements per atom. Specifically, we investigate the evolution of the structural features, the mechanical properties, and the response to impact loading of Al2O3 thin films. Initially, the thin films contain a homogeneous dispersion of nanocrystals in an amorphous matrix. Irradiation induces crystallization of the amorphous phase, followed by grain growth. Crystallization brings along an enhancement of hardness, while grain growth induces softening according to the Hall-Petch effect. During grain growth, the excess mechanical energy is dissipated by twinning. The main energy dissipation mechanisms available upon impact loading are lattice plasticity and localized amorphization. These mechanisms are available in the irradiated material, but not in the as-deposited films.

  4. Dipole defects in Al2O3:Mg,Cr.

    PubMed

    Blak, A R; Gobbi, V; Ayres, F

    2002-01-01

    In this work, dipole defects are investigated applying the thermally stimulated depolarisation currents (TSDC) technique. The TSDC spectra of Al2O3 doped with Mg and Cr show two bands centred at 230 K and 250 K, respectively. The maximum intensity of the bands increases linearly with the polarisation field, a typical behaviour of defects with dipole origin. An increase of the band at 250 K with gamma irradiation has been observed and a thermal decrease of the bands for heat treatments between 1000 K and 1400 K. Above this temperature the bands are partially recovered. Impurity neutron activation analysis shows that magnesium. chromium and iron content varies from 15 to 60 ppm. Optical absorption (AO) measurements show a broad band centred in 2.6 eV (21000 cm(-1)) associated with trapped holes localised on an O- ion adjacent to a cation site which is deficient in positive charge. It has been assumed that a substitutional Mg2+ ion occupies the cation site near a trapped hole on one of the six oxygen ions surrounding the magnesium impurity giving rise to the dipole responsible for the observed TSDC bands. Calculations carried out through defect simulation methods confirm that the probability of Al3+ being replaced by Mg2+ is higher than Mn2+, Co2+, Fe2+ and Cr2+. PMID:12382829

  5. The thermodynamic properties of hydrated -Al2O3 nanoparticles

    SciTech Connect

    Spencer, Elinor; Huang, Baiyu; Parker, Stewart F.; Kolesnikov, Alexander I; Ross, Dr. Nancy; Woodfield, Brian

    2013-01-01

    In this paper we report a combined calorimetric and inelastic neutron scattering (INS) study of hydrated -Al2O3 ( -alumina) nanoparticles. These complementary techniques have enabled a comprehensive evaluation of the thermodynamic properties of this technological and industrially important metal oxide to be achieved. The isobaric heat capacity (Cp) data presented herein provide further critical insights into the much-debated chemical composition of -alumina nanoparticles. Furthermore, the isochoric heat capacity (Cv) of the surface water, which is so essential to the stability of all metal-oxides at the nanoscale, has been extracted from the high-resolution INS data and differs significantly from that of ice Ih due to the dominating influence of strong surface-water interactions. This study also encompassed the analysis of four -alumina samples with differing pore diameters [4.5 (1), 13.8 (2), 17.9 (3), and 27.2 nm (4)], and the results obtained allow us to unambiguously conclude that the water content and pore size have no influence on the thermodynamic behaviour of hydrated -alumina nanoparticles.

  6. Effect of atomic layer deposition temperature on current conduction in Al2O3 films formed using H2O oxidant

    NASA Astrophysics Data System (ADS)

    Hiraiwa, Atsushi; Matsumura, Daisuke; Kawarada, Hiroshi

    2016-08-01

    To develop high-performance, high-reliability gate insulation and surface passivation technologies for wide-bandgap semiconductor devices, the effect of atomic layer deposition (ALD) temperature on current conduction in Al2O3 films is investigated based on the recently proposed space-charge-controlled field emission model. Leakage current measurement shows that Al2O3 metal-insulator-semiconductor capacitors formed on the Si substrates underperform thermally grown SiO2 capacitors at the same average field. However, using equivalent oxide field as a more practical measure, the Al2O3 capacitors are found to outperform the SiO2 capacitors in the cases where the capacitors are negatively biased and the gate material is adequately selected to reduce virtual dipoles at the gate/Al2O3 interface. The Al2O3 electron affinity increases with the increasing ALD temperature, but the gate-side virtual dipoles are not affected. Therefore, the leakage current of negatively biased Al2O3 capacitors is approximately independent of the ALD temperature because of the compensation of the opposite effects of increased electron affinity and permittivity in Al2O3. By contrast, the substrate-side sheet of charge increases with increasing ALD temperature above 210 °C and hence enhances the current of positively biased Al2O3 capacitors more significantly at high temperatures. Additionally, an anomalous oscillatory shift of the current-voltage characteristics with ALD temperature was observed in positively biased capacitors formed by low-temperature (≤210 °C) ALD. This shift is caused by dipoles at the Al2O3/underlying SiO2 interface. Although they have a minimal positive-bias leakage current, the low-temperature-grown Al2O3 films cause the so-called blisters problem when heated above 400 °C. Therefore, because of the absence of blistering, a 450 °C ALD process is presently the most promising technology for growing high-reliability Al2O3 films.

  7. DC conduction and breakdown characteristics of Al2O3/cross-linked polyethylene nanocomposites for high voltage direct current transmission cable insulation

    NASA Astrophysics Data System (ADS)

    Park, Yong-Jun; Kwon, Jung-Hun; Sim, Jae-Yong; Hwang, Ju-Na; Seo, Cheong-Won; Kim, Ji-Ho; Lim, Kee-Joe

    2014-08-01

    We have discussed a cross-linked polyethylene (XLPE) nanocomposite insulating material that is able to DC voltage applications. Nanocomposites, which are composed in polymer matrix mixed with nano-fillers, have received considerable attention because of their potential benefits as dielectrics. The nano-sized alumina oxide (Al2O3)/XLPE nanocomposite was prepared, and three kinds of test, such as DC breakdown, DC polarity reversal breakdown, and volume resistivity were performed. By the addition of nano-sized Al2O3 filler, both the DC breakdown strength and the volume resistivity of XLPE were increased. A little homogeneous space charge was observed in Al2O3/XLPE nanocomposite material in the vicinity of electrode through the polarity reversal breakdown test. From these results, it is thought that the addition of Al2O3 nano-filler is effective for the improvement of DC electrical insulating properties of XLPE.

  8. Resistive switching characteristics in memristors with Al2O3/TiO2 and TiO2/Al2O3 bilayers

    NASA Astrophysics Data System (ADS)

    Alekseeva, Liudmila; Nabatame, Toshihide; Chikyow, Toyohiro; Petrov, Anatolii

    2016-08-01

    Differences between the resistive switching characteristics of Al2O3/TiO2 and TiO2/Al2O3 bilayer structures, fabricated by atomic layer deposition at 200 °C and post-deposition annealing, were studied in Pt bottom electrode (Pt-BE)/insulator/Pt top electrode (Pt-TE) capacitors. The Pt-BE/Al2O3/TiO2/Pt-TE capacitor exhibits stable bipolar resistive switching with an on-resistance/off-resistance ratio of ∼102 controlled by a small voltage of ±0.8 V. The forming process occurs in two steps of breaking of the Al2O3 layer and transfer of oxygen vacancies (VO) into the TiO2 layer. The capacitor showed poor endurance, particularly in the high-resistance state under vacuum conditions. This indicates that the insulating TiO2 layer without VO is not formed near the Al2O3 layer because oxygen cannot be introduced from the exterior. On the other hand, in the Pt-BE/TiO2/Al2O3/Pt-TE capacitor, multilevel resistive switching with several applied voltage-dependent nonvolatile states is observed. The switching mechanism corresponds to the Al2O3 layer’s trapped VO concentration, which is controlled by varying the applied voltage.

  9. Properties of slow traps of ALD Al2O3/GeOx/Ge nMOSFETs with plasma post oxidation

    NASA Astrophysics Data System (ADS)

    Ke, M.; Yu, X.; Chang, C.; Takenaka, M.; Takagi, S.

    2016-07-01

    The realization of Ge gate stacks with a small amount of slow trap density as well as thin equivalent oxide thickness and low interface state density (Dit) is a crucial issue for Ge CMOS. In this study, we examine the properties of slow traps, particularly the location of slow traps, of Al2O3/GeOx/n-Ge and HfO2/Al2O3/GeOx/n-Ge MOS interfaces with changing the process and structural parameters, formed by atomic layer deposition (ALD) of Al2O3 and HfO2/Al2O3 combined with plasma post oxidation. It is found that the slow traps can locate in the GeOx interfacial layer, not in the ALD Al2O3 layer. Furthermore, we study the time dependence of channel currents in the Ge n-MOSFETs with 5-nm-thick Al2O3/GeOx/Ge gate stacks, with changing the thickness of GeOx, in order to further clarify the position of slow traps. The time dependence of the current drift and the effective time constant of slow traps do not change among the MOSFETs with the different thickness GeOx, demonstrating that the slow traps mainly exist near the interfaces between Ge and GeOx.

  10. Volatile organic compounds emission control in industrial pollution source using plasma technology coupled with F-TiO2/γ-Al2O3.

    PubMed

    Zhu, Tao; Chen, Rui; Xia, Ni; Li, Xiaoyang; He, Xianxian; Zhao, Wenjuan; Carr, Tim

    2015-01-01

    Volatile organic compounds' (VOCs) effluents, which come from many industries, are triggering serious environmental problems. As an emerging technology, non-thermal plasma (NTP) technology is a potential technology for VOCs emission control. NTP coupled with F-TiO2/γ-Al2O3 is used for toluene removal from a gaseous influent at normal temperature and atmospheric pressure. NTP is generated by dielectric barrier discharge, and F-TiO2/γ-Al2O3 can be prepared by sol-gel method in the laboratory. In the experiment, the different packed materials were packed into the plasma reactor, including γ-Al2O3, TiO2/γ-Al2O3 and F-TiO2/γ-Al2O3. Through a series of characterization methods such as X-ray diffraction, scanning electronic microscopy and Brunner-Emmet-Teller measurements, the results show that the particle size distribution of F-TiO2 is relatively smaller than that of TiO2, and the pore distribution of F-TiO2 is more uniformly distributed than that of TiO2. The relationships among toluene removal efficiency, reactor input energy density, and the equivalent capacitances of air gap and dielectric barrier layer were investigated. The results show that the synergistic technology NTP with F-TiO2/γ-Al2O3 resulted in greater enhancement of toluene removal efficiency and energy efficiency. Especially, when packing with F-TiO2/γ-Al2O3 in NTP reactor, toluene removal efficiency reaches 99% and higher. Based on the data analysis of Fourier Transform Infrared Spectroscopy, the experimental results showed that NTP reactor packed with F-TiO2/γ-Al2O3 resulted in a better inhibition for by-products formation effectively in the gas exhaust.

  11. The MgO-Al2O3-SiO2 system - Free energy of pyrope and Al2O3-enstatite. [in earth mantle formation

    NASA Technical Reports Server (NTRS)

    Saxena, S. K.

    1981-01-01

    The model of fictive ideal components is used to determine Gibbs free energies of formation of pyrope and Al2O3-enstatite from the experimental data on coexisting garnet and orthopyroxene and orthopyroxene and spinel in the temperature range 1200-1600 K. It is noted that Al2O3 forms an ideal solution with MgSiO3. These thermochemical data are found to be consistent with the Al2O3 isopleths that could be drawn using most recent experimental data and with the reversed experimental data on the garnet-spinel field boundary.

  12. Effects of high-temperature O2 annealing on Al2O3 blocking layer and Al2O3/Si3N4 interface for MANOS structures

    NASA Astrophysics Data System (ADS)

    Xu, Zhongguang; Zhu, Chenxin; Huo, Zongliang; Zhao, Shengjie; Liu, Ming

    2012-05-01

    In this paper, we have investigated the effects of O2 post-deposition annealing (PDA) on metal/Al2O3/Si3N4/SiO2/Si (MANOS) devices. Compared with low-energy plasma oxygen pre-treatment and the N2 PDA process, the O2 PDA process can lead to a significant retention improvement. The improvement is attributed to the removal of oxygen vacancies in Al2O3 block oxide and the oxygen incorporation at the Si3N4/Al2O3 interfacial layer which is determined by x-ray photoelectron spectroscopy (XPS) depth profiling and electrical characteristics. Metal/Al2O3/SiO2/Si (MAOS) devices are also studied to confirm these effects. As a result, we consider that the O2 PDA process is a crucial process for future MANOS-type memory devices.

  13. Atomic rearrangements in amorphous Al2O3 under electron-beam irradiation

    NASA Astrophysics Data System (ADS)

    Nakamura, R.; Ishimaru, M.; Yasuda, H.; Nakajima, H.

    2013-02-01

    The electron-irradiation-induced crystallization of amorphous Al2O3 (a-Al2O3) was investigated by in-situ transmission electron microscopy under the wide electron-energy region of 25-300 keV. The formation of γ-Al2O3 nanocrystallites was induced by irradiating the a-Al2O3 thin film along with the formation of nanovoids in the crystalline grains regardless of the acceleration voltage. The crystallization became more pronounced with decreasing the electron energy, indicating that electronic excitation processes play a dominant role in the formation of γ-Al2O3. Radial distribution analyses suggested that a-Al2O3 transforms to γ-phase via the "excited" ("stimulated") amorphous state, in which the breaking and rearrangement of unstable short-range Al-O bonds, i.e., fivefold-coordinated Al-O (AlO5) basic units, occur.

  14. Preparation of γ-Al2O3 films by laser chemical vapor deposition

    NASA Astrophysics Data System (ADS)

    Gao, Ming; Ito, Akihiko; Goto, Takashi

    2015-06-01

    γ- and α-Al2O3 films were prepared by chemical vapor deposition using CO2, Nd:YAG, and InGaAs lasers to investigate the effects of varying the laser wavelength and deposition conditions on the phase composition and microstructure. The CO2 laser was found to mostly produce α-Al2O3 films, whereas the Nd:YAG and InGaAs lasers produced γ-Al2O3 films when used at a high total pressure. γ-Al2O3 films had a cauliflower-like structure, while the α-Al2O3 films had a dense and columnar structure. Of the three lasers, it was the Nd:YAG laser that interacted most with intermediate gas species. This promoted γ-Al2O3 nucleation in the gas phase at high total pressure, which explains the cauliflower-like structure of nanoparticles observed.

  15. pH-controlled selective etching of Al2O3 over ZnO.

    PubMed

    Sun, Kaige G; Li, Yuanyuan V; Saint John, David B; Jackson, Thomas N

    2014-05-28

    We describe pH-controlled selective etching of atomic layer deposition (ALD) Al2O3 over ZnO. Film thickness as a function of etch exposure was measured by spectroscopic ellipsometry. We find that alkaline aqueous solutions with pH between about 9 and 12 will etch Al2O3 at useful rate with minimal attack of ZnO. Highly selective etching of Al2O3 over ZnO (selectivity >400:1) and an Al2O3 etch rate of ∼50 nm/min can be obtained using a pH 12 etch solution at 60 °C. PMID:24818868

  16. Static compression of Al2O3 to 1.2 Mbars /120 GPa/

    NASA Technical Reports Server (NTRS)

    Gupta, M. C.; Ruoff, A. L.

    1979-01-01

    Pressures up to 120 GPa were generated when a diamond indentor of radius 10.0 micrometers was pressed against a very thin sample of Al2O3 on a diamond flat. The thin film of Al2O3 was prepared by sputtering of aluminum in an oxygen atmosphere. From the measurement of the electrical resistance of Al2O3 as a function of pressure it was found that Al2O3 remains an insulator at the highest pressure studied, namely, 120 GPa.

  17. Effective passivation of In0.2Ga0.8As by HfO2 surpassing Al2O3 via in-situ atomic layer deposition

    NASA Astrophysics Data System (ADS)

    Chang, Y. H.; Lin, C. A.; Liu, Y. T.; Chiang, T. H.; Lin, H. Y.; Huang, M. L.; Lin, T. D.; Pi, T. W.; Kwo, J.; Hong, M.

    2012-10-01

    High κ gate dielectrics of HfO2 and Al2O3 were deposited on molecular beam epitaxy-grown In0.2Ga0.8As pristine surface using in-situ atomic-layer-deposition (ALD) without any surface treatment or passivation layer. The ALD-HfO2/p-In0.2Ga0.8As interface showed notable reduction in the interfacial density of states (Dit), deduced from quasi-static capacitance-voltage and conductance-voltage (G-V) at room temperature and 100 °C. More significantly, the midgap peak commonly observed in the Dit(E) of ALD-oxides/In0.2Ga0.8As is now greatly diminished. The midgap Dit value decreases from ≥15 × 1012 eV-1 cm-2 for ALD-Al2O3 to ˜2-4 × 1012 eV-1 cm-2 for ALD-HfO2. Further, thermal stability at 850 °C was achieved in the HfO2/In0.2Ga0.8As, whereas C-V characteristics of Al2O3/p-In0.2Ga0.8As degraded after the high temperature annealing. From in-situ x-ray photoelectron spectra, the AsOx, which is not the oxidized state from the native oxide, but is an induced state from adsorption of trimethylaluminum and H2O, was found at the ALD-Al2O3/In0.2Ga0.8As interface, while that was not detected at the ALD-HfO2/In0.2Ga0.8As interface.

  18. Passivation of Al2O3 / TiO2 on monocrystalline Si with relatively low reflectance

    NASA Astrophysics Data System (ADS)

    Lu, Chun-Ti; Huang, Yu-Shiang; Liu, C. W.

    2016-06-01

    Al2O3/TiO2 stack layers deposited by the plasma-enhanced atomic layer deposition enhance photoluminescence intensity by reducing effective surface recombination velocities on both n-type and p-type monocrystalline Si. The field effect of negative oxide charges in the dielectrics is responsible for the low effective surface recombination velocity. The dependence of the effective surface recombination velocity on the photoluminescence intensity is investigated by the 2D numerical simulation. The bilayer stacks without texture also reduce the AM1.5-weighted front side reflectance to 11.8%. The field-effect passivation of Al2O3/TiO2 films is further improved by a forming gas annealing due to the additional increase of the negative oxide charge density.

  19. ALD of Al2O3 for Highly Improved Performance in Li-Ion Batteries

    SciTech Connect

    Dillon, A.; Jung, Y. S.; Ban, C.; Riley, L.; Cavanagh, A.; Yan, Y.; George, S.; Lee, S. H.

    2012-01-01

    Significant advances in energy density, rate capability and safety will be required for the implementation of Li-ion batteries in next generation electric vehicles. We have demonstrated atomic layer deposition (ALD) as a promising method to enable superior cycling performance for a vast variety of battery electrodes. The electrodes range from already demonstrated commercial technologies (cycled under extreme conditions) to new materials that could eventually lead to batteries with higher energy densities. For example, an Al2O3 ALD coating with a thickness of ~ 8 A was able to stabilize the cycling of unexplored MoO3 nanoparticle anodes with a high volume expansion. The ALD coating enabled stable cycling at C/2 with a capacity of ~ 900 mAh/g. Furthermore, rate capability studies showed the ALD-coated electrode maintained a capacity of 600 mAh/g at 5C. For uncoated electrodes it was only possible to observe stable cycling at C/10. Also, we recently reported that a thin ALD Al2O3 coating with a thickness of ~5 A can enable natural graphite (NG) electrodes to exhibit remarkably durable cycling at 50 degrees C. The ALD-coated NG electrodes displayed a 98% capacity retention after 200 charge-discharge cycles. In contrast, bare NG showed a rapid decay. Additionally, Al2O3 ALD films with a thickness of 2 to 4 A have been shown to allow LiCoO2 to exhibit 89% capacity retention after 120 charge-discharge cycles performed up to 4.5 V vs Li/Li+. Bare LiCoO2 rapidly deteriorated in the first few cycles. The capacity fade is likely caused by oxidative decomposition of the electrolyte at higher potentials or perhaps cobalt dissolution. Interestingly, we have recently fabricated full cells of NG and LiCoO2 where we coated both electrodes, one or the other electrode as well as neither electrode. In creating these full cells, we observed some surprising results that lead us to obtain a greater understanding of the ALD coatings. We have also recently coated a binder free LiNi0.04Mn0

  20. Very low-pressure VLP-CVD growth of high quality γ-Al 2O 3 films on silicon by multi-step process

    NASA Astrophysics Data System (ADS)

    Tan, Liwen; Zan, Yude; Wang, Jun; Wang, Qiyuan; Yu, Yuanhuan; Wang, Shurui; Liu, Zhongli; Lin, Lanying

    2002-03-01

    γ-Al 2O 3 films were grown on Si (1 0 0) substrates using the sources of TMA (Al(CH 3) 3) and O 2 by very low-pressure chemical vapor deposition. The effects of temperature control on the crystalline quality, surface morphology, uniformity and dielectricity were investigated. It has been found that the γ-Al 2O 3 film prepared at a temperature of 1000°C has a good crystalline quality, but the surface morphology, uniformity and dielectricity were poor due to the etching reaction between O 2 and Si substrate in the initial growth stage. However, under a temperature-varied multi-step process the properties of γ-Al 2O 3 film were improved. The films have a mirror-like surface and the dielectricity was superior to that grown under a single-step process. The uniformity of γ-Al 2O 3 films for 2-in epi-wafer was <5%, it is better than that disclosed elsewhere. In order to improve the crystalline quality, the γ-Al 2O 3 films were annealed for 1 h in O 2 atmosphere.

  1. Evaluation of Ir/Al2O3, Ir-Ru/Al2O3 and Ru/Al2O3 catalyst performance in a 5 N satellite thruster

    NASA Astrophysics Data System (ADS)

    Jofre, J. B. F.; Soares Neto, T. G.; Dias, F. F.; Cruz, G. M.

    2013-04-01

    Ir/Al2O3, Ir-Ru/Al2O3 and Ru/Al2O3 catalysts with approximately 33% metallic content in mass were prepared in 20 impregnation steps. For the Ru catalyst, two impregnation methods were employed: incipient wetness (chlorinated precursor) and by excess volume (non-chlorinated precursor). For the remaining catalysts, only incipient wetness impregnation was used with chlorinated precursors. Catalyst textural properties were evaluated before and after catalytic tests: metallic grade, specific area, mesopore volume distribution, metallic dispersion, and metallic particle average diameter. Catalysts were tested for hydrazine (N2H4) decomposition reaction in a 5 N satellite thruster and their performances were compared to Shell 405 commercial catalyst. Results showed that catalysts containing Ir were similar in performance to Shell 405 commercial catalyst and that the catalyst containing only Ru should not be used in cold starts.

  2. Oxidation precursor dependence of atomic layer deposited Al2O3 films in a-Si:H(i)/Al2O3 surface passivation stacks.

    PubMed

    Xiang, Yuren; Zhou, Chunlan; Jia, Endong; Wang, Wenjing

    2015-01-01

    In order to obtain a good passivation of a silicon surface, more and more stack passivation schemes have been used in high-efficiency silicon solar cell fabrication. In this work, we prepared a-Si:H(i)/Al2O3 stacks on KOH solution-polished n-type solar grade mono-silicon(100) wafers. For the Al2O3 film deposition, both thermal atomic layer deposition (T-ALD) and plasma enhanced atomic layer deposition (PE-ALD) were used. Interface trap density spectra were obtained for Si passivation with a-Si films and a-Si:H(i)/Al2O3 stacks by a non-contact corona C-V technique. After the fabrication of a-Si:H(i)/Al2O3 stacks, the minimum interface trap density was reduced from original 3 × 10(12) to 1 × 10(12) cm(-2) eV(-1), the surface total charge density increased by nearly one order of magnitude for PE-ALD samples and about 0.4 × 10(12) cm(-2) for a T-ALD sample, and the carrier lifetimes increased by a factor of three (from about 10 μs to about 30 μs). Combining these results with an X-ray photoelectron spectroscopy analysis, we discussed the influence of an oxidation precursor for ALD Al2O3 deposition on Al2O3 single layers and a-Si:H(i)/Al2O3 stack surface passivation from field-effect passivation and chemical passivation perspectives. In addition, the influence of the stack fabrication process on the a-Si film structure was also discussed in this study.

  3. Sintering aids for producing BaO-Al2O3-2SiO2 and SrO-Al2O3-2SiO2 ceramic materials

    SciTech Connect

    Talmy, I.G.; Zaykoski, J.A.

    1995-07-26

    Accordingly, an object of this invention is to provide a new lower temperature process for preparing dense monoclinic BaO.Al2O3.2SiO2 (BAS; celsian) monoclinic SrO.Al2O3.2SiO2 (SAS), or monoclinic BAS/SAS solid solution ceramic materials. Another object of this invention is to provide new sintering aids suitable for producing high strength, low dielectric ceramic materials from BAS, SAS, or mixtures thereof. These and other objects of this invention are accomplished by providing a sintering aid that is a homogenous glass containing (1) from 14 10 45 mole percent of an alkaline earth oxide that is BaO. SrO. or mixtures of BaO and SrO (2) from 8 to 16 weight percent of Al2O3 and (3) The remainder of the glass being SiO2. The homogeneous glass when mixed as a powder with monoclinic BAS powder, monoclinic SAS powder. or mixture of monoclinic BAS and SAS powders reduces the firing temperature required to produce a fully densified ceramic material.

  4. Deposition and Properties of the Pseudobinary Alloy (Al2O3)x(TiO2)1-x and Its Application for Silicon Surface Passivation

    NASA Astrophysics Data System (ADS)

    Vitanov, P.; Harizanova, A.; Ivanova, T.; Alexieva, Z.; Agostinelli, G.

    2006-07-01

    The electrical properties of (Al2O3)x(TiO2)1-x thin films, obtained from sol solution by spin coating on Si substrates (c-Si or mc-Si), have been studied. By varying the ratios between Al2O3 and TiO2 components, the optical and dielectric characteristics can be changed. This deposition method can be used for effective engineering of physical properties of the dielectric layer. Surface recombination velocities as low as 150 cm/s have been obtained using (Al2O3)x(TiO2)1-x layers on 1 Ω\\cdotcm Czochralski (CZ) silicon wafers. Low surface recombination is achieved by field induced surface passivation due to a high density of negative fixed charges.

  5. [Catalytic degradation of naphthalene by CuO (-CeO2)/Al2O3].

    PubMed

    Zha, Jian; Zhou, Hong-Cang; He, Du-Liang; Shan, Long; Zhang, Lu; Xie, Jie

    2014-10-01

    Three catalysts CuO/Al2O3, CeO2/Al2O3 and CuO-CeO2/Al2O3 were prepared by the impregnation method. The textural and structural properties of the synthesized catalysts were characterized by N2 adsorption/desorption, SEM and XRD, and the effect of active ingredients, flow rate and reaction temperature on catalytic degradation of naphthalene (NaP) were investigated in fixed-bed reactor. The experimental results show that the prepared 18% CeO2/Al2O3 has a low catalytic activity of NaP. Nevertheless, both 18% CuO/Al2O3 and 9% CuO-9% CeO2/Al2O3 exhibit high catalytic activity whose removal efficiencies at 300°C can reach 91% and 89%, respectively. Besides, compared with CuO/Al2O3, CuO-CeO2/Al2O3 possesses a higher low-temperature activity. Furthermore, the variation of flow rates has little effect on the performance of two catalysts.

  6. Metastability in the MgAl2O4-Al2O3 System

    DOE PAGES

    Wilkerson, Kelley R.; Smith, Jeffrey D.; Hemrick, James G.

    2014-07-22

    Aluminum oxide must take a spinel form ( γ-Al2O3) at elevated temperatures in order for extensive solid solution to form between MgAl2O4 and α-Al2O3. The solvus line between MgAl2O4 and Al2O3 has been defined at 79.6 wt% Al2O3 at 1500°C, 83.0 wt% Al2O3 at 1600°C, and 86.5 wt% Al2O3 at 1700°C. A metastable region has been defined at temperatures up to 1700°C which could have significant implications for material processing and properties. Additionally, initial processing could have major implications on final chemistry. The spinel solid solution region has been extended to form an infinite solid solution with Al2O3 at elevatedmore » temperatures. A minimum in melting at 1975°C and a chemistry of 96 wt% Al2O3 rather than a eutectic is present, resulting in no eutectic crystal formation during solidification.« less

  7. Injection Seeding of Ti:Al2O3 in an unstable resonator theory and experiment

    NASA Technical Reports Server (NTRS)

    Barnes, J. C.; Wang, L. G.; Barnes, N. P.; Edwards, W. C.; Cheng, W. A.; Hess, R. V.; Lockard, G. E.; Ponsardin, P. L.

    1991-01-01

    Injection Seeding of a Ti:Al2O3 unstable resonator using both a pulsed single-mode Ti:Al2O3 laser and a continuous wave laser diode has been characterized. Results are compared with a theory which calculates injection seeding as function of seed and resonator alignment, beam profiles, and power.

  8. [Catalytic degradation of naphthalene by CuO (-CeO2)/Al2O3].

    PubMed

    Zha, Jian; Zhou, Hong-Cang; He, Du-Liang; Shan, Long; Zhang, Lu; Xie, Jie

    2014-10-01

    Three catalysts CuO/Al2O3, CeO2/Al2O3 and CuO-CeO2/Al2O3 were prepared by the impregnation method. The textural and structural properties of the synthesized catalysts were characterized by N2 adsorption/desorption, SEM and XRD, and the effect of active ingredients, flow rate and reaction temperature on catalytic degradation of naphthalene (NaP) were investigated in fixed-bed reactor. The experimental results show that the prepared 18% CeO2/Al2O3 has a low catalytic activity of NaP. Nevertheless, both 18% CuO/Al2O3 and 9% CuO-9% CeO2/Al2O3 exhibit high catalytic activity whose removal efficiencies at 300°C can reach 91% and 89%, respectively. Besides, compared with CuO/Al2O3, CuO-CeO2/Al2O3 possesses a higher low-temperature activity. Furthermore, the variation of flow rates has little effect on the performance of two catalysts. PMID:25693411

  9. [CuO-Ru/Al2O3 catalytic ozonation of acetophenone in water].

    PubMed

    Zhang, Hua; Shi, Rui; Zang, Xing-jie; Tong, Shao-ping; Ma, Chun-an

    2010-03-01

    Two-component CuO-Ru based on active Al2O3 (CuO-Ru/Al2O3) catalyst was prepared by incipient wetness impregnation and used to catalytic ozonation of acetophenone (AP). The results showed that doping Ru could significantly improve the catalytic activity of CuO/Al2O3. For example, the COD removal rates of AP solution after 30 min by ozonation alone, CuO/Al2O3/O3, and CuO-Ru/Al2O3/O3 were 6.3%, 20.0% and 54.0%, respectively. The change of pH almost had no affect on degradation efficiency of AP. However, a comparison of COD removal between ozonation alone and catalytic ozonation indicated that CuO-Ru/Al2O3 catalyst was more suitable for application in neutral or acidic condition. CuO-Ru/Al2O3 catalyst could accelerate decomposition rate of ozone in water, and its decomposition rate constant reached 2.58 x 10(-3) s(-1) while that of ozone alone in double-water was 1.19 x 10(-3) s(-1). The experimental result of t-butanol indicated that CuO-Ru/Al2O3 catalytic ozonation of AP followed a radical-type mechanism. PMID:20358832

  10. Formation of gamma'-Ni3Al via the Peritectoid Reaction: gamma plus beta (+Al2O3) equals gamma'(+Al2O3)

    NASA Technical Reports Server (NTRS)

    Copland, Evan

    2008-01-01

    The activities of Al and Ni were measured using multi-cell Knudsen effusion-cell mass spectrometry (multi-cell KEMS), over the composition range 8 - 32 at.%Al and temperature range T = 1400 - 1750 K in the Ni-Al-O system. These measurements establish that equilibrium solidification of gamma'-Ni3Al-containing alloys occurs by the eutectic reaction, L (+ Al2O3) = gamma + beta (+ Al2O3), at 1640 plus or minus 1 K and a liquid composition of 24.8 plus or minus 0.2 at.%Al (at an unknown oxygen content). The {gamma + beta + Al2O3} phase field is stable over the temperature range 1633 - 1640 K, and gamma'-Ni3Al forms via the peritectiod, gamma + beta (+ Al2O3) = gamma'(+ Al2O3), at 1633 plus or minus 1 K. This behavior is inconsistent with the current Ni-Al phase diagram and a new diagram is proposed. This new Ni-Al phase diagram explains a number of unusual steady state solidification structures reported previously and provides a much simpler reaction scheme in the vicinity of the gamma'-Ni3Al phase field.

  11. Formation of gamma(sup prime)-Ni3Al via the Peritectoid Reaction: gamma + beta (+ Al2O3)=gamma(sup prime)(+ Al2O3)

    NASA Technical Reports Server (NTRS)

    Copeland, Evan

    2008-01-01

    The activities of Al and Ni were measured using multi-cell Knudsen effusion-cell mass spectrometry (multi-cell KEMS), over the composition range 8-32 at.%Al and temperature range T=1400-1750 K in the Ni-Al-O system. These measurements establish that equilibrium solidification of gamma(sup prime)-Ni3Al-containing alloys occurs by the eutectic reaction, L (+ Al2O3)=gamma + Beta(+ Al2O3), at 1640 +/- 1 K and a liquid composition of 24.8 +/- 0.2 at.%al (at an unknown oxygen content). The {gamma + Beta (+Al2O3} phase field is stable over the temperature range 1633-1640 K, and gamma(sup prime)-Ni3Al forms via the peritectoid, gamma + Beta (+ Al2O3)=gamma(sup prime) (+ Al2O3), at 1633 +/- 1 K. This behavior is consistent with the current Ni-Al phase diagram and a new diagram is proposed. This new Ni-Al phase diagram explains a number of unusual steady-state solidification structures reported previously and provides a much simpler reaction scheme in the vicinity of the gamma(sup prime)-Ni2Al phase field.

  12. Interface behavior of Al2O3/Ti joints produced by liquid state bonding.

    PubMed

    Lemus-Ruiz, J; Guevara-Laureano, A O; Zarate-Medina, J; Arellano-Lara, A; Ceja-Cárdenas, L

    2015-04-01

    In this work we study brazing of Al2O3 to Ti with biocompatibility properties, using a Au-foil as joining element. Al2O3 was produced by sintering of powder at 1550°C. Al2O3 samples were coated with a 2 and 4μm thick of Mo layer and then stacked with Ti. Al2O3-Mo/Au/Ti combinations were joined at 1100°C in vacuum. Successful joining of Mo-Al2O3 to Ti was observed. Interface shows the formation of a homogeneous diffusion zone. Mo diffused inside Au forming a concentration line. Ti3Au and TiAu phases were observed.

  13. Influences of high-temperature annealing on atomic layer deposited Al2O3/4H-SiC

    NASA Astrophysics Data System (ADS)

    Wang, Yi-Yu; Shen, Hua-Jun; Bai, Yun; Tang, Yi-Dan; Liu, Ke-An; Li, Cheng-Zhan; Liu, Xin-Yu

    2013-07-01

    High-temperature annealing of the atomic layer deposition (ALD) of Al2O3 films on 4H-SiC in O2 atmosphere is studied with temperature ranging from 800 °C to 1000 °C. It is observed that the surface morphology of Al2O3 films annealed at 800 °C and 900 °C is pretty good, while the surface of the sample annealed at 1000 °C becomes bumpy. Grazing incidence X-ray diffraction (GIXRD) measurements demonstrate that the as-grown films are amorphous and begin to crystallize at 900 °C. Furthermore, C—V measurements exhibit improved interface characterization after annealing, especially for samples annealed at 900 °C and 1000 °C. It is indicated that high-temperature annealing in O2 atmosphere can improve the interface of Al2O3/SiC and annealing at 900 °C would be an optimum condition for surface morphology, dielectric quality, and interface states.

  14. Catalytic ozonation of petroleum refinery wastewater utilizing Mn-Fe-Cu/Al2O 3 catalyst.

    PubMed

    Chen, Chunmao; Yoza, Brandon A; Wang, Yandan; Wang, Ping; Li, Qing X; Guo, Shaohui; Yan, Guangxu

    2015-04-01

    There is of great interest to develop an economic and high-efficient catalytic ozonation system (COS) for the treatment of biologically refractory wastewaters. Applications of COS require options of commercially feasible catalysts. Experiments in the present study were designed to prepare and investigate a novel manganese-iron-copper oxide-supported alumina-assisted COS (Mn-Fe-Cu/Al2O3-COS) for the pretreatment of petroleum refinery wastewater. The highly dispersed composite metal oxides on the catalyst surface greatly promoted the performance of catalytic ozonation. Hydroxyl radical mediated oxidation is a dominant reaction in Mn-Fe-Cu/Al2O3-COS. Mn-Fe-Cu/Al2O3-COS enhanced COD removal by 32.7% compared with a single ozonation system and by 8-16% compared with Mn-Fe/Al2O3-COS, Mn-Cu/Al2O3-COS, and Fe-Cu/Al2O3-COS. The O/C and H/C ratios of oxygen-containing polar compounds significantly increased after catalytic ozonation, and the biodegradability of petroleum refinery wastewater was significantly improved. This study illustrates potential applications of Mn-Fe-Cu/Al2O3-COS for pretreatment of biologically refractory wastewaters.

  15. Pinhole Effect on the Melting Behavior of Ag@Al2O3 SERS Substrates.

    PubMed

    Ma, Lingwei; Huang, Yu; Hou, Mengjing; Li, Jianghao; Zhang, Zhengjun

    2016-12-01

    High-temperature surface-enhanced Raman scattering (SERS) sensing is significant for practical detections, and pinhole-containing (PC) metal@oxide structures possessing both enhanced thermal stability and superior SERS sensitivity are served as promising SERS sensors at extreme sensing conditions. Through tuning the Al2O3 precursors' exposure time during atomic layer deposition (ALD), Al2O3 shells with different amount of pinholes were covered over Ag nanorods (Ag NRs). By virtue of these unique PC Ag@Al2O3 nanostructures, herein we provide an excellent platform to investigate the relationship between the pinhole rate of Al2O3 shells and the melting behavior, high-temperature SERS performances of these core-shell nanostructures. Pinhole effect on the melting procedures of PC Ag@Al2O3 substrates was characterized in situ via their reflectivity variations during heating, and the specific melting point was quantitatively estimated. It is found that the melting point of PC Ag@Al2O3 raised along with the decrement of pinhole rate, and substrates with less pinholes exhibited better thermal stability but sacrificed SERS efficiency. This work achieved highly reliable and precise control of the pinholes over Al2O3 shells, offering sensitive SERS substrates with intensified thermal stability and superior SERS performances at extreme sensing conditions. PMID:27033846

  16. Catalytic ozonation of petroleum refinery wastewater utilizing Mn-Fe-Cu/Al2O 3 catalyst.

    PubMed

    Chen, Chunmao; Yoza, Brandon A; Wang, Yandan; Wang, Ping; Li, Qing X; Guo, Shaohui; Yan, Guangxu

    2015-04-01

    There is of great interest to develop an economic and high-efficient catalytic ozonation system (COS) for the treatment of biologically refractory wastewaters. Applications of COS require options of commercially feasible catalysts. Experiments in the present study were designed to prepare and investigate a novel manganese-iron-copper oxide-supported alumina-assisted COS (Mn-Fe-Cu/Al2O3-COS) for the pretreatment of petroleum refinery wastewater. The highly dispersed composite metal oxides on the catalyst surface greatly promoted the performance of catalytic ozonation. Hydroxyl radical mediated oxidation is a dominant reaction in Mn-Fe-Cu/Al2O3-COS. Mn-Fe-Cu/Al2O3-COS enhanced COD removal by 32.7% compared with a single ozonation system and by 8-16% compared with Mn-Fe/Al2O3-COS, Mn-Cu/Al2O3-COS, and Fe-Cu/Al2O3-COS. The O/C and H/C ratios of oxygen-containing polar compounds significantly increased after catalytic ozonation, and the biodegradability of petroleum refinery wastewater was significantly improved. This study illustrates potential applications of Mn-Fe-Cu/Al2O3-COS for pretreatment of biologically refractory wastewaters. PMID:25649390

  17. Pinhole Effect on the Melting Behavior of Ag@Al2O3 SERS Substrates.

    PubMed

    Ma, Lingwei; Huang, Yu; Hou, Mengjing; Li, Jianghao; Zhang, Zhengjun

    2016-12-01

    High-temperature surface-enhanced Raman scattering (SERS) sensing is significant for practical detections, and pinhole-containing (PC) metal@oxide structures possessing both enhanced thermal stability and superior SERS sensitivity are served as promising SERS sensors at extreme sensing conditions. Through tuning the Al2O3 precursors' exposure time during atomic layer deposition (ALD), Al2O3 shells with different amount of pinholes were covered over Ag nanorods (Ag NRs). By virtue of these unique PC Ag@Al2O3 nanostructures, herein we provide an excellent platform to investigate the relationship between the pinhole rate of Al2O3 shells and the melting behavior, high-temperature SERS performances of these core-shell nanostructures. Pinhole effect on the melting procedures of PC Ag@Al2O3 substrates was characterized in situ via their reflectivity variations during heating, and the specific melting point was quantitatively estimated. It is found that the melting point of PC Ag@Al2O3 raised along with the decrement of pinhole rate, and substrates with less pinholes exhibited better thermal stability but sacrificed SERS efficiency. This work achieved highly reliable and precise control of the pinholes over Al2O3 shells, offering sensitive SERS substrates with intensified thermal stability and superior SERS performances at extreme sensing conditions.

  18. Al2O3 on Black Phosphorus by Atomic Layer Deposition: An in Situ Interface Study.

    PubMed

    Zhu, Hui; McDonnell, Stephen; Qin, Xiaoye; Azcatl, Angelica; Cheng, Lanxia; Addou, Rafik; Kim, Jiyoung; Ye, Peide D; Wallace, Robert M

    2015-06-17

    In situ "half cycle" atomic layer deposition (ALD) of Al2O3 was carried out on black phosphorus ("black-P") surfaces with modified phosphorus oxide concentrations. X-ray photoelectron spectroscopy is employed to investigate the interfacial chemistry and the nucleation of the Al2O3 on black-P surfaces. This work suggests that exposing a sample that is initially free of phosphorus oxide to the ALD precursors does not result in detectable oxidation. However, when the phosphorus oxide is formed on the surface prior to deposition, the black-P can react with both the surface adventitious oxygen contamination and the H2O precursor at a deposition temperature of 200 °C. As a result, the concentration of the phosphorus oxide increases after both annealing and the atomic layer deposition process. The nucleation rate of Al2O3 on black-P is correlated with the amount of oxygen on samples prior to the deposition. The growth of Al2O3 follows a "substrate inhibited growth" behavior where an incubation period is required. Ex situ atomic force microscopy is also used to investigate the deposited Al2O3 morphologies on black-P where the Al2O3 tends to form islands on the exfoliated black-P samples. Therefore, surface functionalization may be needed to get a conformal coverage of Al2O3 on the phosphorus oxide free samples.

  19. Pinhole Effect on the Melting Behavior of Ag@Al2O3 SERS Substrates

    NASA Astrophysics Data System (ADS)

    Ma, Lingwei; Huang, Yu; Hou, Mengjing; Li, Jianghao; Zhang, Zhengjun

    2016-03-01

    High-temperature surface-enhanced Raman scattering (SERS) sensing is significant for practical detections, and pinhole-containing (PC) metal@oxide structures possessing both enhanced thermal stability and superior SERS sensitivity are served as promising SERS sensors at extreme sensing conditions. Through tuning the Al2O3 precursors' exposure time during atomic layer deposition (ALD), Al2O3 shells with different amount of pinholes were covered over Ag nanorods (Ag NRs). By virtue of these unique PC Ag@Al2O3 nanostructures, herein we provide an excellent platform to investigate the relationship between the pinhole rate of Al2O3 shells and the melting behavior, high-temperature SERS performances of these core-shell nanostructures. Pinhole effect on the melting procedures of PC Ag@Al2O3 substrates was characterized in situ via their reflectivity variations during heating, and the specific melting point was quantitatively estimated. It is found that the melting point of PC Ag@Al2O3 raised along with the decrement of pinhole rate, and substrates with less pinholes exhibited better thermal stability but sacrificed SERS efficiency. This work achieved highly reliable and precise control of the pinholes over Al2O3 shells, offering sensitive SERS substrates with intensified thermal stability and superior SERS performances at extreme sensing conditions.

  20. Vacuum ultraviolet thin films. I - Optical constants of BaF2, CaF2, LaF3, MgF2, Al2O3, HfO2, and SiO2 thin films. II - Vacuum ultraviolet all-dielectric narrowband filters

    NASA Technical Reports Server (NTRS)

    Zukic, Muamer; Torr, Douglas G.; Spann, James F.; Torr, Marsha R.

    1990-01-01

    An iteration process matching calculated and measured reflectance and transmittance values in the 120-230 nm VUV region is presently used to ascertain the optical constants of bulk MgF2, as well as films of BaF2, CaF2, LaF3, MgF2, Al2O3, HfO2, and SiO2 deposited on MgF2 substrates. In the second part of this work, a design concept is demonstrated for two filters, employing rapidly changing extinction coefficients, centered at 135 nm for BaF2 and 141 nm for SiO2. These filters are shown to yield excellent narrowband spectral performance in combination with narrowband reflection filters.

  1. Stoichiometry of the ALD-Al2O3/4H–SiC interface by synchrotron-based XPS

    NASA Astrophysics Data System (ADS)

    Usman, Muhammad; Saveda Suvanam, Sethu; Ghadami Yazdi, Milad; Göthelid, Mats; Sultan, Muhammad; Hallén, Anders

    2016-06-01

    The interface of Al2O3 with 4H-SiC is investigated with synchrotron-based high-resolution x-ray photoelectron spectroscopy to clarify the effect of post-dielectric deposition annealing processes (rapid thermal annealing (RTA) and furnace annealing (FA)) involved in device fabrication. Our results show that post-deposition annealing of Al2O3/4H-SiC up to 1100 °C forms a thin interfacial layer of SiO2 between Al2O3 and SiC, which possibly improves the dielectric properties of the system by reducing oxide charges and near-interface traps. Moreover, the formation of SiO2 at the interface gives additional band offset to the dielectric system. We have also observed that the RTA and FA processes have similar results at a high temperature of 1100 °C. Therefore, we propose that high-temperature post-oxide (Al2O3) deposition annealing of up to 1100 °C may be used in device processing, which can improve overall dielectric properties and consequently the device performance.

  2. Stoichiometry of the ALD-Al2O3/4H-SiC interface by synchrotron-based XPS

    NASA Astrophysics Data System (ADS)

    Usman, Muhammad; Saveda Suvanam, Sethu; Ghadami Yazdi, Milad; Göthelid, Mats; Sultan, Muhammad; Hallén, Anders

    2016-06-01

    The interface of Al2O3 with 4H-SiC is investigated with synchrotron-based high-resolution x-ray photoelectron spectroscopy to clarify the effect of post-dielectric deposition annealing processes (rapid thermal annealing (RTA) and furnace annealing (FA)) involved in device fabrication. Our results show that post-deposition annealing of Al2O3/4H-SiC up to 1100 °C forms a thin interfacial layer of SiO2 between Al2O3 and SiC, which possibly improves the dielectric properties of the system by reducing oxide charges and near-interface traps. Moreover, the formation of SiO2 at the interface gives additional band offset to the dielectric system. We have also observed that the RTA and FA processes have similar results at a high temperature of 1100 °C. Therefore, we propose that high-temperature post-oxide (Al2O3) deposition annealing of up to 1100 °C may be used in device processing, which can improve overall dielectric properties and consequently the device performance.

  3. FAST TRACK COMMUNICATION: Self-patterned aluminium interconnects and ring electrodes for arrays of microcavity plasma devices encapsulated in Al2O3

    NASA Astrophysics Data System (ADS)

    Kim, K. S.; Park, S.-J.; Eden, J. G.

    2008-01-01

    Automatic formation of Al interconnects and ring electrodes, fully encapsulated by alumina, in planar arrays of Al2O3/Al/Al2O3 microcavity plasma devices has been accomplished by electrochemical processing of Al foil. Following the fabrication of cylindrical microcavities (50-350 µm in diameter) in 127 µm thick Al foil, virtually complete anodization of the foil yields azimuthally symmetric Al electrodes surrounding each cavity and interconnects between adjacent microcavities that are produced and simultaneously buried within a transparent Al2O3 film without the need for conventional patterning techniques. The diameter and pitch of the microcavities prior to anodization, as well as the anodization process parameters, determine which of the microcavity plasma devices in a one- or two-dimensional array are connected electrically. Data presented for 200 µm diameter cavities with a pitch of 150-225 µm illustrate the patterning of the interconnects and electrode connectivity after 4-10 h of anodization in oxalic acid. Self-patterned, linear arrays comprising 25 dielectric barrier devices have been excited by a sinusoidal or bipolar pulse voltage waveform and operated in 400-700 Torr of rare gas. Owing to the electrochemical conversion of most of the Al foil into Al2O3, the self-formed arrays exhibit an areal capacitance ~82% lower than that characteristic of previous Al/Al2O3 device arrays (Park et al 2006 J. Appl. Phys. 99 026107).

  4. Finite element analysis of WC-Al2O3 composites

    NASA Astrophysics Data System (ADS)

    Patel, Satyanarayan; Vaish, Rahul

    2014-02-01

    Object oriented finite element analysis (OOF2) is used to estimate the thermal and mechanical properties of WC-Al2O3 composites. In the present work, five compositions of 10%, 20%, 30%, 40% and 50% Al2O3 (by volume) are studied. Young's modulus, thermal conductivity and thermal expansion coefficient are estimated using OOF2 and compared with other known analytical methods. Stress and strain contours are plotted to study the thermal and mechanical behavior of composites. It is found that the stresses are largely concentrated at the interfaces of the WC-Al2O3 phases.

  5. Synthesis and optical studies of chemically synthesized PPy/Al2O3 nanocomposites

    NASA Astrophysics Data System (ADS)

    Bahadur, Indra; Mishra, Sheo K.; Tripathi, Akhilesh; Shukla, R. K.

    2016-05-01

    In the present work, we have synthesised pure and 2wt% Al2O3 doped PPy by the chemical oxidation method. XRD patterns of 2wt% Al2O3 doped PPy shows several broad peaks while pure PPy shows only one single peak indicating poor crystalline phase of PPy. FTIR spectra confirm the formation of PPy and also suggest that doping of Al2O3 in PPy does not affect its structure. PL shows several emission peaks for both samples located at ˜365 nm with two shoulders at ˜473 nm and ˜533 nm. The further synthesis and properties study is under investigation.

  6. Thermoluminescence studies of γ-irradiated Al2O3:Ce3+ phosphor

    NASA Astrophysics Data System (ADS)

    Reddy, S. Satyanarayana; Nagabhushana, K. R.; Singh, Fouran

    2016-07-01

    Pure and Ce3+ doped Al2O3 phosphors were synthesized by solution combustion method. The synthesized samples were characterized by X-ray diffraction (XRD) and its shows α-phase of Al2O3. Crystallite size was estimated by Williamson-Hall (W-H) method and found to be 49, 59 and 84 nm for pure, 0.1 mol% and 1 mol% Ce3+ doped Al2O3 respectively. Trace elemental analysis of undoped Al2O3 shows impurities viz. Fe, Cr, Mn, Mg, Ti, etc. Photoluminescence (PL) spectra of Al2O3:Ce3+ shows emission at 367 nm and excitation peak at 273 nm, which are corresponding to 5D → 4F and 4F → 5D transitions respectively. PL intensity decreases with concentration up to 0.4 mol%, beyond this mol% PL intensity increases with doping concentration up to 2 mol%. Thermoluminescence (TL) studies of γ-rayed pure and Ce3+ doped Al2O3 have been studied. Two well resolved TL glow peaks at 457.5 K and 622 K were observed in pure Al2O3. Additional glow peak at 566 K was observed in Al2O3:Ce3+. Maximum TL intensity was observed for Al2O3:Ce3+ (0.1 mol%) beyond this TL intensity decreases with increasing Ce3+ concentration. Computerized glow curve deconvolution (CGCD) method was used to resolve the multiple peaks and to calculate TL kinetic parameters. Thermoluminescence emission (TLE) spectra of pure Al2O3 glow peaks (457.5 K and 622 K) shows sharp emission at 694 nm and two small humps at 672 nm and 709 nm. The sharp peak at 696 nm corresponds to Cr3+ impurity of 2Eg → 4A2g transition of R lines and 713 nm hump is undoubtedly belongs to Cr3+ emission of near neighbor pairs. The emission at 672 nm is characteristic of Mn4+ impurity ions of 2E → 4A2 transition. TLE of Al2O3:Ce3+ (0.1 mol%) shows additional broad emission at 412 nm corresponds to F-centers. Linearity is observed in the dose range 20-500 Gy in Al2O3:Ce3+ (1 mol%).

  7. [Preparation, characterization and three way catalytic performance for Pd/CZ/Al2O3 catalyst].

    PubMed

    Fang, Shi-Ping; Chen, Hong-De; Tian, Qun; Yao, Qing; Han, Yun

    2005-09-01

    Pd/CZ/Al2O3 catalyst was prepared by impregnating a noble metal solution to the support CZ/Al2O3 which was prefabricated by co-impregnation. The investigation results show that Pd/CZ/Al2O3 has a superior three-way catalytic performance, which is comparable to Pd/CZ for the fresh sample and a better one after thermal ageing. Based on the XRD, BET and TPR characterizations, the internal relationship between catalytic performance, composition and structure was discussed. The relatively high activity after thermal ageing is ascribed to the maintenance of the Strong Metal-Support Interaction (SMSI).

  8. Impacts of Annealing Conditions on the Flat Band Voltage of Alternate La2O3/Al2O3 Multilayer Stack Structures.

    PubMed

    Feng, Xing-Yao; Liu, Hong-Xia; Wang, Xing; Zhao, Lu; Fei, Chen-Xi; Liu, He-Lei

    2016-12-01

    The mechanism of flat band voltage (VFB) shift for alternate La2O3/Al2O3 multilayer stack structures in different annealing condition is investigated. The samples were prepared for alternate multilayer structures, which were annealed in different conditions. The capacitance-voltage (C-V) measuring results indicate that the VFB of samples shift negatively for thinner bottom Al2O3 layer, increasing annealing temperature or longer annealing duration. Simultaneously, the diffusion of high-k material to interfaces in different multilayer structures and annealing conditions is observed by X-ray photoelectron spectroscopy (XPS). Based on the dipole theory, a correlation between the diffusion effect of La towards bottom Al2O3/Si interface and VFB shift is found. Without changing the dielectric constant k of films, VFB shift can be manipulated by controlling the single-layer cycles and annealing conditions of alternate high-k multilayer stack. PMID:27620192

  9. Impacts of Annealing Conditions on the Flat Band Voltage of Alternate La2O3/Al2O3 Multilayer Stack Structures.

    PubMed

    Feng, Xing-Yao; Liu, Hong-Xia; Wang, Xing; Zhao, Lu; Fei, Chen-Xi; Liu, He-Lei

    2016-12-01

    The mechanism of flat band voltage (VFB) shift for alternate La2O3/Al2O3 multilayer stack structures in different annealing condition is investigated. The samples were prepared for alternate multilayer structures, which were annealed in different conditions. The capacitance-voltage (C-V) measuring results indicate that the VFB of samples shift negatively for thinner bottom Al2O3 layer, increasing annealing temperature or longer annealing duration. Simultaneously, the diffusion of high-k material to interfaces in different multilayer structures and annealing conditions is observed by X-ray photoelectron spectroscopy (XPS). Based on the dipole theory, a correlation between the diffusion effect of La towards bottom Al2O3/Si interface and VFB shift is found. Without changing the dielectric constant k of films, VFB shift can be manipulated by controlling the single-layer cycles and annealing conditions of alternate high-k multilayer stack.

  10. Enhanced self-repairing capability of sol-gel derived SrTiO3/nano Al2O3 composite films

    NASA Astrophysics Data System (ADS)

    Yao, Manwen; Peng, Yong; Xiao, Ruihua; Li, Qiuxia; Yao, Xi

    2016-08-01

    SrTiO3/nano Al2O3 inorganic nanocomposites were prepared by using a conventional sol-gel spin coating process. For comparison, SrTiO3 films doped by equivalent amount of sol-Al2O3 have also been investigated. Aluminum deposited by using vacuum evaporation was used as the top electrode. The nanocomposites exhibited a significantly enhanced dielectric strength of 506.9 MV/m, which was increased by 97.4% as compared with the SrTiO3 films doped with sol-Al2O3. The leakage current maintained of the same order of microampere until the ultimate breakdown of the nanocomposites. The excellent electrical performances are ascribed to the anodic oxidation reaction in origin, which can repair the internal and/or surface defects of the films.

  11. Impacts of Annealing Conditions on the Flat Band Voltage of Alternate La2O3/Al2O3 Multilayer Stack Structures

    NASA Astrophysics Data System (ADS)

    Feng, Xing-Yao; Liu, Hong-Xia; Wang, Xing; Zhao, Lu; Fei, Chen-Xi; Liu, He-Lei

    2016-09-01

    The mechanism of flat band voltage (VFB) shift for alternate La2O3/Al2O3 multilayer stack structures in different annealing condition is investigated. The samples were prepared for alternate multilayer structures, which were annealed in different conditions. The capacitance-voltage (C-V) measuring results indicate that the VFB of samples shift negatively for thinner bottom Al2O3 layer, increasing annealing temperature or longer annealing duration. Simultaneously, the diffusion of high- k material to interfaces in different multilayer structures and annealing conditions is observed by X-ray photoelectron spectroscopy (XPS). Based on the dipole theory, a correlation between the diffusion effect of La towards bottom Al2O3/Si interface and VFB shift is found. Without changing the dielectric constant k of films, VFB shift can be manipulated by controlling the single-layer cycles and annealing conditions of alternate high- k multilayer stack.

  12. Optical properties of the Al2O3/SiO2 and Al2O3/HfO2/SiO2 antireflective coatings

    NASA Astrophysics Data System (ADS)

    Marszałek, Konstanty; Winkowski, Paweł; Jaglarz, Janusz

    2014-01-01

    Investigations of bilayer and trilayer Al2O3/SiO2 and Al2O3/HfO2/SiO2 antireflective coatings are presented in this paper. The oxide films were deposited on a heated quartz glass by e-gun evaporation in a vacuum of 5 × 10-3 [Pa] in the presence of oxygen. Depositions were performed at three different temperatures of the substrates: 100 °C, 200 °C and 300 °C. The coatings were deposited onto optical quartz glass (Corning HPFS). The thickness and deposition rate were controlled with Inficon XTC/2 thickness measuring system. Deposition rate was equal to 0.6 nm/s for Al2O3, 0.6 nm - 0.8 nm/s for HfO2 and 0.6 nm/s for SiO2. Simulations leading to optimization of the thin film thickness and the experimental results of optical measurements, which were carried out during and after the deposition process, have been presented. The optical thickness values, obtained from the measurements performed during the deposition process were as follows: 78 nm/78 nm for Al2O3/SiO2 and 78 nm/156 nm/78 nm for Al2O3/HfO2/SiO2. The results were then checked by ellipsometric technique. Reflectance of the films depended on the substrate temperature during the deposition process. Starting from 240 nm to the beginning of visible region, the average reflectance of the trilayer system was below 1 % and for the bilayer, minima of the reflectance were equal to 1.6 %, 1.15 % and 0.8 % for deposition temperatures of 100 °C, 200 °C and 300 °C, respectively.

  13. Feasibility study of plasma sprayed Al2O3 coatings as diffusion barrier on CFC components

    NASA Astrophysics Data System (ADS)

    Bobzin, Kirsten; Zhao, Lidong; Kopp, Nils; Warda, Thomas

    2012-12-01

    Carbon fibre reinforced carbon (CFC) materials are increasingly applied as sample carriers in modern furnaces. Only their tendency to react with different metals at high temperatures by C-diffusion is a disadvantage, which can be solved by application of diffusion barriers. Within this study the feasibility of plasma sprayed Al2O3 coatings as diffusion barrier was studied. Al2O3 coatings were prepared by air plasma spraying (APS). The coatings were investigated in terms of their microstructure, bonding to CFC substrates and thermal stability. The results showed that Al2O3 could be well deposited onto CFC substrates. The coatings had a good bonding and thermal shock behavior at 1060°C. At higher temperature of 1270°C, crack network formed within the coating, showing that the plasma sprayed Al2O3 coatings are limited regarding to their application temperatures as diffusion barrier on CFC components.

  14. Production of hydrogen by autothermal reforming of propane over Ni/delta-Al2O3.

    PubMed

    Lee, Hae Ri; Lee, Kwi Yeon; Park, Nam Cook; Shin, Jae Soon; Moon, Dong Ju; Lee, Byung Gwon; Kim, Young Chul

    2006-11-01

    The performance of Ni/delta-Al2O3 catalyst in propane autothermal reforming (ATR) for hydrogen production was investigated in the present study. The catalysts were characterized using XRD, TEM, and SEM. The activity of the Ni/delta-Al2O3 catalyst manufactured by the water-alcohol method was better than those of the catalysts manufactured by the impregnation and chemical reduction methods. The Ni/delta-Al2O3 catalysts were modified by the addition of promoters such as Mg, La, Ce, and Co, in order to improve their stability and yield. Hydrogen production was the largest for the Ni-Co-CeO2/Al2O3, catalyst.

  15. Luminescent properties of Al2O3:Ce single crystalline films under synchrotron radiation excitation

    NASA Astrophysics Data System (ADS)

    Zorenko, Yu.; Zorenko, T.; Gorbenko, V.; Savchyn, V.; Voznyak, T.; Fabisiak, K.; Zhusupkalieva, G.; Fedorov, A.

    2016-09-01

    The paper is dedicated to study the luminescent and scintillation properties of the Al2O3:Ce single crystalline films (SCF) grown by LPE method onto saphire substrates from PbO based flux. The structural quality of SCF samples was investigated by XRD method. For characterization of luminescent properties of Al2O3:Ce SCFs the cathodoluminescence spectra, scintillation light yield (LY) and decay kinetics under excitation by α-particles of Pu239 source were used. We have found that the scintillation LY of Al2O3:Ce SCF samples is relatively large and can reach up to 50% of the value realized in the reference YAG:Ce SCF. Using the synchrotron radiation excitation in the 3.7-25 eV range at 10 K we have also determined the basic parameters of the Ce3+ luminescence in Al2O3 host.

  16. Tb3+ ion doping into Al2O3: Solubility limit and luminescence properties

    NASA Astrophysics Data System (ADS)

    Onishi, Yuya; Nakamura, Toshihiro; Adachi, Sadao

    2016-11-01

    Tb3+-activated Al2O3 phosphors with a molar ratio of \\text{Al}:\\text{Tb} = (1 - x):x are synthesized by metal organic decomposition (x = 0–0.15) and subsequent calcination at T c = 200–1200 °C for 1 h in air. The material properties of the synthesized phosphors are investigated by X-ray diffraction (XRD), photoluminescence (PL) analyses, PL excitation spectroscopy, and luminescence lifetime measurements. At x = 0.015, the metastable phase of γ-Al2O3 is obtained by calcination at T c ∼ 300–1050 °C and a mixture of γ, θ, and α phases at T c ∼ 1050–1150 °C. The high-temperature stable phase of α-Al2O3 is obtained only at T c ≥ 1150 °C. Below T c ∼ 300 °C, the XRD data suggest the formation of boehmite (AlOOH). The solubility limit of Tb3+ in α-Al2O3 is also clearly determined to be x ∼ 0.015 (1.5%). The PL decay time of the Tb3+ green emission in α-Al2O3 is ∼1.1 ms for x < 0.015 and slowly decreases with further increase in x (Tb3+). The schematic energy-level diagram of Tb3+ in α-Al2O3 is proposed for a better understanding of the present phosphor system. Finally, the temperature dependence of the PL intensity is examined between T = 20 and 450 K, yielding quenching energies of E q ∼ 0.28 eV (α-Al2O3 and γ-Al2O3).

  17. Ion conduction and relaxation in PEO-LiTFSI-Al2O3 polymer nanocomposite electrolytes

    NASA Astrophysics Data System (ADS)

    Das, S.; Ghosh, A.

    2015-05-01

    Ion conduction and relaxation in PEO-LiTFSI-Al2O3 polymer nanocomposite electrolytes have been studied for different concentrations of Al2O3 nanoparticles. X-ray diffraction and differential scanning calorimetric studies show that the maximum amorphous phase of PEO is observed for PEO-LiTFSI embedded with 5 wt. % Al2O3. The maximum ionic conductivity ˜3.3 × 10-4 S cm-1 has been obtained for this composition. The transmission electron microscopic image shows a distribution of Al2O3 nanoparticles in all compositions with size of <50 nm. The temperature dependence of the ionic conductivity follows Vogel-Tamman-Fulcher nature, indicating a strong coupling between ionic and polymer chain segmental motions. The scaling of the ac conductivity implies that relaxation dynamics follows a common mechanism for different temperatures and Al2O3 concentrations. The imaginary modulus spectra are asymmetric and skewed toward the high frequency sides of the maxima and analyzed using Havriliak-Negami formalism. The temperature dependence of the relaxation time obtained from modulus spectra also exhibits Vogel-Tamman-Fulcher nature. The values of the stretched exponent obtained from Kohlrausch-Williams-Watts fit to the modulus data are fairly low, suggesting highly non-exponential relaxation for all concentrations of Al2O3 in these electrolytes.

  18. Postperovskite phase equilibria in the MgSiO3-Al2O3 system.

    PubMed

    Tsuchiya, Jun; Tsuchiya, Taku

    2008-12-01

    We investigate high-P,T phase equilibria of the MgSiO(3)-Al(2)O(3) system by means of the density functional ab initio computation methods with multiconfiguration sampling. Being different from earlier studies based on the static substitution properties with no consideration of Rh(2)O(3)(II) phase, present calculations demonstrate that (i) dissolving Al(2)O(3) tends to decrease the postperovskite transition pressure of MgSiO(3) but the effect is not significant ( approximately -0.2 GPa/mol% Al(2)O(3)); (ii) Al(2)O(3) produces the narrow perovskite+postperovskite coexisting P,T area (approximately 1 GPa) for the pyrolitic concentration (x(Al2O3) approximately 6 mol%), which is sufficiently responsible to the deep-mantle D'' seismic discontinuity; (iii) the transition would be smeared (approximately 4 GPa) for the basaltic Al-rich composition (x(Al2O3) approximately 20 mol%), which is still seismically visible unless iron has significant effects; and last (iv) the perovskite structure spontaneously changes to the Rh(2)O(3)(II) with increasing the Al concentration involving small displacements of the Mg-site cations.

  19. Influence of annealing temperature on the phase transformation of Al2O3

    NASA Astrophysics Data System (ADS)

    Mahat, Annie Maria; Mastuli, Mohd Sufri; Kamarulzaman, Norlida

    2016-02-01

    In the present study, Al2O3 powders were prepared via a self-propagating combustion method using citric acid as a combustion agent. Effects of annealing temperature on the phase transformation of the prepared powders were studied on samples annealed at 800 °C and 1000 °C. The Al2O3 samples were characterized using X-Ray diffraction (XRD), field emission scanning electron microscopy (FESEM) and N2 adsorption-desorption measurements. The XRD results showed that pure η-phase and pure α-phase of Al2O3 were obtained at 800 °C and 1000 °C, respectively. Their crystallite sizes are totally different as can be seen clearly from the FESEM micrographs. The η-Al2O3 sample annealed at low temperature has crystallite size smaller than 10 nm compared to the α-Al2O3 sample annealed at higher temperature which has crystallites from few microns to hundreds microns in size. From the BET (Brunauer-Emmett-Teller) method, the specific surface area for both samples are 59.4 m2g-1 and 3.1 m2g-1, respectively. It is proposed that the annealing temperature less pronounced for the morphology, but, it is significant for the phase transitions as well as the size and the specific surface area of the Al2O3 samples.

  20. Sodium ion diffusion in Al2O3: a distinct perspective compared with lithium ion diffusion.

    PubMed

    Jung, Sung Chul; Kim, Hyung-Jin; Choi, Jang Wook; Han, Young-Kyu

    2014-11-12

    Surface coating of active materials has been one of the most effective strategies to mitigate undesirable side reactions and thereby improve the overall battery performance. In this direction, aluminum oxide (Al2O3) is one of the most widely adopted coating materials due to its easy synthesis and low material cost. Nevertheless, the effect of Al2O3 coating on carrier ion diffusion has been investigated mainly for Li ion batteries, and the corresponding understanding for emerging Na ion batteries is currently missing. Using ab initio molecular dynamics calculations, herein, we first find that, unlike lithiation, sodiation of Al2O3 is thermodynamically unfavorable. Nonetheless, there can still exist a threshold in the Na ion content in Al2O3 before further diffusion into the adjacent active material, delivering a new insight that both thermodynamics and kinetics should be taken into account to describe ionic diffusion in any material media. Furthermore, Na ion diffusivity in NaxAl2O3 turns out to be much higher than Li ion diffusivity in LixAl2O3, a result opposite to the conventional stereotype based on the atomic radius consideration. While hopping between the O-rich trapping sites via an Na-O bond breaking/making process is identified as the main Na ion diffusion mechanism, the weaker Na-O bond strength than the Li-O counterpart turns out to be the origin of the superior diffusivity of Na ions.

  1. Reactive Plasma Spraying of Fine Al2O3/AlN Feedstock Powder

    NASA Astrophysics Data System (ADS)

    Shahien, Mohammed; Yamada, Motohiro; Yasui, Toshiaki; Fukumoto, Masahiro

    2013-12-01

    Reactive plasma spraying (RPS) is a promising technology for in situ formation of aluminum nitride (AlN) coatings. Recently, AlN-based coatings were fabricated by RPS of alumina (Al2O3) powder in N2/H2 thermal plasma. This study investigated the feasibility of RPS of a fine Al2O3/AlN mixture and the influence of the plasma gases (N2, H2) on the nitriding conversion, and coating microstructure and properties. Thick AlN/Al2O3 coatings with high nitride content were successfully fabricated. The coatings consist of h-AlN, c-AlN, Al5O6N, γ-Al2O3, and a small amount of α-Al2O3. Use of fine particles enhanced the nitriding conversion and the melting tendency by increasing the surface area. Furthermore, the AlN additive improved the AlN content in the coatings. Increasing the N2 gas flow rate improved the nitride content and complete crystal growth to the h-AlN phase, and enhanced the coating thickness. On the other hand, though the H2 gas is required for plasma nitriding of the Al2O3 particles, increasing its flow rate decreased the nitride content and the coating thickness. Remarkable influence of the plasma gases on the coating composition, microstructure, and properties was observed during RPS of the fine particles.

  2. Polystyrene-Al2O3 composite solid polymer electrolyte for lithium secondary battery.

    PubMed

    Lim, Yu-Jeong; An, Yu-Ha; Jo, Nam-Ju

    2012-01-05

    In a common salt-in-polymer electrolyte, a polymer which has polar groups in the molecular chain is necessary because the polar groups dissolve lithium salt and coordinate cations. Based on the above point of view, polystyrene [PS] that has nonpolar groups is not suitable for the polymer matrix. However, in this PS-based composite polymer-in-salt system, the transport of cations is not by segmental motion but by ion-hopping through a lithium percolation path made of high content lithium salt. Moreover, Al2O3 can dissolve salt, instead of polar groups of polymer matrix, by the Lewis acid-base interactions between the surface group of Al2O3 and salt. Notably, the maximum enhancement of ionic conductivity is found in acidic Al2O3 compared with neutral and basic Al2O3 arising from the increase of free ion fraction by dissociation of salt. It was revealed that PS-Al2O3 composite solid polymer electrolyte containing 70 wt.% salt and 10 wt.% acidic Al2O3 showed the highest ionic conductivity of 9.78 × 10-5 Scm-1 at room temperature.

  3. Image reconstruction algorithm for optically stimulated luminescence 2D dosimetry using laser-scanned Al2O3:C and Al2O3:C,Mg films

    NASA Astrophysics Data System (ADS)

    Ahmed, M. F.; Schnell, E.; Ahmad, S.; Yukihara, E. G.

    2016-10-01

    The objective of this work was to develop an image reconstruction algorithm for 2D dosimetry using Al2O3:C and Al2O3:C,Mg optically stimulated luminescence (OSL) films imaged using a laser scanning system. The algorithm takes into account parameters associated with detector properties and the readout system. Pieces of Al2O3:C films (~8 mm  ×  8 mm  ×  125 µm) were irradiated and used to simulate dose distributions with extreme dose gradients (zero and non-zero dose regions). The OSLD film pieces were scanned using a custom-built laser-scanning OSL reader and the data obtained were used to develop and demonstrate a dose reconstruction algorithm. The algorithm includes corrections for: (a) galvo hysteresis, (b) photomultiplier tube (PMT) linearity, (c) phosphorescence, (d) ‘pixel bleeding’ caused by the 35 ms luminescence lifetime of F-centers in Al2O3, (e) geometrical distortion inherent to Galvo scanning system, and (f) position dependence of the light collection efficiency. The algorithm was also applied to 6.0 cm  ×  6.0 cm  ×  125 μm or 10.0 cm  ×  10.0 cm  ×  125 µm Al2O3:C and Al2O3:C,Mg films exposed to megavoltage x-rays (6 MV) and 12C beams (430 MeV u‑1). The results obtained using pieces of irradiated films show the ability of the image reconstruction algorithm to correct for pixel bleeding even in the presence of extremely sharp dose gradients. Corrections for geometric distortion and position dependence of light collection efficiency were shown to minimize characteristic limitations of this system design. We also exemplify the application of the algorithm to more clinically relevant 6 MV x-ray beam and a 12C pencil beam, demonstrating the potential for small field dosimetry. The image reconstruction algorithm described here provides the foundation for laser-scanned OSL applied to 2D dosimetry.

  4. Investigation of hybrid plasma-catalytic removal of acetone over CuO/γ-Al2O3 catalysts using response surface method.

    PubMed

    Zhu, Xinbo; Tu, Xin; Mei, Danhua; Zheng, Chenghang; Zhou, Jinsong; Gao, Xiang; Luo, Zhongyang; Ni, Mingjiang; Cen, Kefa

    2016-07-01

    In this work, plasma-catalytic removal of low concentrations of acetone over CuO/γ-Al2O3 catalysts was carried out in a cylindrical dielectric barrier discharge (DBD) reactor. The combination of plasma and the CuO/γ-Al2O3 catalysts significantly enhanced the removal efficiency of acetone compared to the plasma process using the pure γ-Al2O3 support, with the 5.0 wt% CuO/γ-Al2O3 catalyst exhibiting the best acetone removal efficiency of 67.9%. Catalyst characterization was carried out to understand the effect the catalyst properties had on the activity of the CuO/γ-Al2O3 catalysts in the plasma-catalytic reaction. The results indicated that the formation of surface oxygen species on the surface of the catalysts was crucial for the oxidation of acetone in the plasma-catalytic reaction. The effects that various operating parameters (discharge power, flow rate and initial concentration of acetone) and the interactions between these parameters had on the performance of the plasma-catalytic removal of acetone over the 5.0 wt% CuO/γ-Al2O3 catalyst were investigated using central composite design (CCD). The significance of the independent variables and their interactions were evaluated by means of the Analysis of Variance (ANOVA). The results showed that the gas flow rate was the most significant factor affecting the removal efficiency of acetone, whilst the initial concentration of acetone played the most important role in determining the energy efficiency of the plasma-catalytic process.

  5. Design of a recessed-gate GaN-based MOSFET using a dual gate dielectric for high-power applications

    NASA Astrophysics Data System (ADS)

    Yoon, Young Jun; Kang, Hee-Sung; Seo, Jae Hwa; Kim, Young-Jo; Bae, Jin-Hyuk; Lee, Jung-Hee; Kang, In Man; Cho, Seongjae; Cho, Eou-Sik

    2014-11-01

    We have investigated gallium-nitride (GaN)-based metal-oxide-semiconductor field-effect transistors (MOSFETs) having a recessed-gate structure for high-power applications. Recessed-gate GaN-based MOSFETs have been designed with a dual high- k dielectric structure to overcome low current drivability. Compared to recessed-gate GaN-based MOSFETs having a single gate dielectric with the same oxide thickness, recessed-gate GaN-based MOSFETs having a dual high- k dielectric composed of Al2O3 and HfO2 have achieved a high drain current ( I D ) and transconductance ( g m ) due to the high dielectric constant of HfO2. Also, because the dual high- k dielectric forms a high electron density in the channel layer with outstanding gate control capability, low channel resistances ( R ch ) have obtained. In addition, we have studied the effect of the length between the gate and the drain ( L gd ) on the on-resistance ( R on ) to minimize the R on that is associated with power consumption and switching performance. Also, the electric field distribution of a device having a dual high- k dielectric has been examined with a field plate structure for high drive voltage. The proposed device was confirmed to be a remarkable candidate for switching devices in high-power applications.

  6. Super Smooth Modification of Al2O3 Ceramic Substrate by High Temperature Glaze of CaO-Al2O3-SiO2 System

    NASA Astrophysics Data System (ADS)

    Zhang, Jihua; Zhen, Shanxue; Yang, Lijun; Lou, Feizhi; Chen, Hongwei; Yang, Chuanren

    2011-01-01

    The rough surface of ceramic substrate is an obstacle for the scale down of line-width for thin film passive integrated devices (PID). In this paper, a modification method for Al2O3 ceramic substrate with super smooth in surface was proposed. Coating a layer of CaO-Al2O3-SiO2 (CAS) glass was performed to flat the rough surface of alumina substrate by sol-gel method. It was found that addition of 0.06% V2O5 can inhibit the recrystallization of the glaze. The root-mean-square (RMS) roughness of the glazed substrates reached a surprising flatness as small as 0.5 nm, and its melting temperature is higher than 1300 °C. This substrate with super flatness and high temperature endurance may be promising for high performance thin film devices.

  7. Enhanced density of negative fixed charges in Al2O3 layers on Si through a subsequent deposition of TiO2

    NASA Astrophysics Data System (ADS)

    Schneider, Thomas; Ziegler, Johannes; Kaufmann, Kai; Ilse, Klemens; Sprafke, Alexander; Wehrspohn, Ralf B.

    2016-04-01

    The passivation of silicon surfaces play an important role for achieving high-efficiency crystalline silicon solar cells. In this work, a stack system comprising of 20nm Al2O3 with a 22nm TiO2 topping layer was deposited on p-type Si using thermal atomic layer deposition (ALD) and was investigated regarding its passivation quality. Quasi-steady-state photo conductance (QSSPC) measurements reveal that the minority carrier lifetime at an injection density of 1015cm-3 increased from 1.10ms to 1.96ms after the deposition of TiO2, which shows that the deposition of TiO2 onto Al2O3 is capable of enhancing its passivation quality. Capacity voltage (CV) measurements show that the amount of negative charges in the dielectric layer has increased from -2.4·1012cm-2 to -6.3·1012cm-2 due to the deposition of TiO2. The location of the additional charges was analyzed in this work by etching the dielectric layer stack in several steps. After each step CV measurements were performed. It is found that the additional negative charges are created within the Al2O3 layer. Additionally, ToF-SIMS measurements were performed to check for diffusion processes within the Al2O3 layer.

  8. First-principles Analysis of NOx Adsorption on Anhydrous γ-Al2O3 Surfaces

    SciTech Connect

    Mei, Donghai; Ge, Qingfeng; Szanyi, Janos; Peden, Charles HF

    2009-04-09

    The interaction of nitrogen oxides NOx (x=1-3) with gamma Al2O3 has been investigated using first-principles density functional theory calculations. NO and NO2 weakly physisorb on the clean, dehydrated (100) and (110) surfaces of gamma Al2O3, whereas the adsorption of the NO3 radical is rather strong. Only the basic-like O-down adsorption configurations were found to be stable. The interaction between NOx and gamma Al2O3 can be described as a surface mediated electron transfer process. For single NOx adsorption, greater electron transfer from the surface to the adsorbate (negatively charged) yields stronger interactions between NOx and the surface. The adsorption of four combinations of NOx+NOy (x=1-3, y=2, 3) pairs on the (100) and the (110) facets of gamma Al2O3 were investigated. Except for the NO2+NO2 pair, a strong cooperative effect that substantially enhances the stability of NOx on both gamma Al2O3 surfaces was found. This cooperative effect consists of surface-mediated electron transfer processes resulting in a favorable electrostatic interaction between two adsorbed NOx species. The pair was found to be the thermodynamically most stable state among the co-adsorbed NOx+NOy pairs on both gamma Al2O3 surfaces. The results are used to analyze the experimentally observed NOx evolution during temperature programmed desorption from NO2-saturated gamma Al2O3 substrates. Pacific Northwest National Laboratory is operated by Battelle for the US Department of Energy.

  9. Atomic layer controlled deposition of Al 2O 3 films using binary reaction sequence chemistry

    NASA Astrophysics Data System (ADS)

    Ott, A. W.; McCarley, K. C.; Klaus, J. W.; Way, J. D.; George, S. M.

    1996-11-01

    Al 2O 3 films with precise thicknesses and high conformality were deposited using sequential surface chemical reactions. To achieve this controlled deposition, a binary reaction for Al 2O 3 chemical vapor deposition (2Al(CH 3) 3 + 3H 2O → Al 2O 3 + 6CH 4) was separated into two half-reactions: (A) AlOH ∗ + Al(CH 3) 3 → AlOAl(CH 3) 2∗ + CH 4, (B) AlCH 3∗ + H 2O → AlOH ∗ + CH 4, where the asterisks designate the surface species. Trimethylaluminum (Al(CH 3) 3) (TMA) and H 2O reactants were employed alternately in an ABAB … binary reaction sequence to deposit Al 2O 3 films on single-crystal Si(100) and porous alumina membranes with pore diameters of ˜ 220 Å. Ellipsometric measurements obtained a growth rate of 1.1 Å/AB cycle on the Si(100) substrate at the optimal reaction conditions. The Al 2O 3 films had an index of refraction of n = 1.65 that is consistent with a film density of ϱ = 3.50 g/cm 3. Atomic force microscope images revealed that the Al 2O 3 films were exceptionally flat with a surface roughness of only ±3 Å ( rms) after the deposition of ˜ 270 Å using 250 AB reaction cycles. Al 2O 3 films were also deposited inside the pores of Anodisc alumina membranes. Gas flux measurements for H 2 and N 2 were consistent with a progressive pore reduction versus number of AB reaction cycles. Porosimetry measurements also showed that the original pore diameter of ˜ 220 Å was reduced to ˜ 130 Å after 120 AB reaction cycles.

  10. High-k ZrO2/Al2O3 bilayer on hydrogenated diamond: Band configuration, breakdown field, and electrical properties of field-effect transistors

    NASA Astrophysics Data System (ADS)

    Liu, J. W.; Liao, M. Y.; Imura, M.; Koide, Y.

    2016-09-01

    A band configuration of a high-k ZrO2/Al2O3 bilayer on hydrogenated diamond (H-diamond), a breakdown field (EB) of the ZrO2/Al2O3 bilayer, and an effect of gate-drain distance (dG-D) on electrical properties of ZrO2/Al2O3/H-diamond metal-insulator-semiconductor field-effect transistors (MISFETs) have been investigated. The Al2O3 and ZrO2 layers are successively deposited on H-diamond by atomic layer deposition (ALD) and sputtering-deposition (SD) techniques, respectively. The thin ALD-Al2O3 buffer layer with 4.0 nm thickness plays a role in protecting the H-diamond surface from being damaged by the plasma discharge during SD-ZrO2 deposition. The ZrO2/Al2O3 heterojunction has a type I band structure with valence and conduction band offsets of 0.6 ± 0.2 and 1.0 ± 0.2 eV, respectively. The valence band offset between ZrO2 and H-diamond is deduced to be 2.3 ± 0.2 eV. The EB of the ZrO2/Al2O3 bilayer is measured to be 5.2 MV cm-1, which is larger than that of the single ZrO2 layer due to the existence of the ALD-Al2O3 buffer layer. The dependence of dG-D on drain-source current maximum (IDS,max), on-resistance (RON), threshold voltage (VTH), and extrinsic transconductance maximum (gm,max) of the MISFETs has been investigated. With increasing dG-D from 4 to 18 μm, the absolute IDS,max decreases from 72.7 to 40.1 mA mm-1, and the RON increases linearly from 83.3 ± 5 to 158.7 ± 5 Ω mm. Variation of VTH values of around 1.0 V is observed, and the gm,max is in the range between 8.0 ± 0.1 and 13.1 ± 0.1 mS mm-1.

  11. Photochemistry of the α-Al2O3-PETN interface

    DOE PAGES

    Tsyshevsky, Roman V.; Zverev, Anton; Mitrofanov, Anatoly; Rashkeev, Sergey N.; Kuklja, Maija M.

    2016-02-29

    Optical absorption measurements are combined with electronic structure calculations to explore photochemistry of an α-Al2O3-PETN interface formed by a nitroester (pentaerythritol tetranitrate, PETN, C5H8N4O12) and a wide band gap aluminum oxide (α-Al2O3) substrate. The first principles modeling is used to deconstruct and interpret the α-Al2O3-PETN absorption spectrum that has distinct peaks attributed to surface F0-centers and surfacePETN transitions. We predict the low energy α-Al2O3 F0-centerPETN transition, producing the excited triplet state, and α-Al2O3 F-0-centerPETN charge transfer, generating the PETN anion radical. This implies that irradiation by commonly used lasers can easily initiate photodecomposition of both excited and charged PETN atmore » the interface. As a result, the feasible mechanism of the photodecomposition is proposed.« less

  12. Synthesis, biocompatibility and mechanical properties of ZrO2-Al2O3 ceramics composites.

    PubMed

    Nevarez-Rascon, Alfredo; González-Lopez, Santiago; Acosta-Torres, Laura Susana; Nevarez-Rascon, Martina Margarita; Orrantia-Borunda, Erasmo

    2016-01-01

    This study evaluated cell viability, microhardness and flexural strength of two ceramic composites systems (ZA and AZ), pure alumina and zirconia. There were prepared homogeneous mixtures of 78wt%Al2O3+20wt%3Y-TZP+2wt%Al2O3w (AZ) and 80wt%3YTZP+18wt%Al2O3+2wt%Al2O3w (ZA), as well as 3Y-TZP (Z), pure Al2O3 (A) and commercial monolithic 3Y-TZP (Zc). Also mouse fibroblast cells 3T3-L1 and a MTT test was carried out at 24, 48 and 72 h. The surfaces were observed with SEM and the microhardness and three-point flexural strength values were estimated. The absolute microhardness values were: A>AZ>Z>Zc>ZA. Flexural strength of Zc, Z, and ZA were around double than AZ and A. All groups showed high biocompatibility trough cell viability values at 24, 48 and 72 h. Factors like grain shape, grain size and homogeneous or heterogeneous grain distributions may play an important role in physical, mechanical and biological properties of the ceramic composites. PMID:27251994

  13. (100) facets of γ-Al2O3: the active surfaces for alcohol dehydration reactions

    SciTech Connect

    Kwak, Ja Hun; Mei, Donghai; Peden, Charles HF; Rousseau, Roger J.; Szanyi, Janos

    2011-05-01

    Temperature programmed desorption (TPD) of ethanol, and methanol dehydration reaction were studied on γ-Al2O3 in order to identify the catalytic active sites for alcohol dehydration reactions. Two high temperature (> 473 K) desorption features were observed following ethanol adsorption. Samples calcined at T≤473 K displayed a desorption feature in the 523-533 K temperature range, while those calcined at T ≥ 673 K showed a single desorption feature at 498 K. The switch from the high to low temperature ethanol desorption correlated well with the dehydroxylation of the (100) facets of γ-Al2O3 that was predicted at 550 K DFT calculations. Theoretical DFT simulations of the mechanism of dehydration. on clean and hydroxylated γ-Al2O3(100) surfaces, find that a concerted elimination of ethylene from an ethanol molecule chemisorbed at an Al3+ pentacoordinated site is the rate limiting step for catalytic cycle on both surfaces. Furthermore, titration of the pentacoordinate Al3+ sites on the (100) facets of γ-Al2O3 by BaO completely turned off the methanol dehydration reaction activity. These results unambiguously demonstrate that only the (100) facets on γ-Al2O3 are the catalytic active surfaces for alcohol dehydration.

  14. Mechanical and Morphological Properties of Polypropylene/Nano α-Al2O3 Composites

    PubMed Central

    Mirjalili, F.; Chuah, L.; Salahi, E.

    2014-01-01

    A nanocomposite containing polypropylene (PP) and nano α-Al2O3 particles was prepared using a Haake internal mixer. Mechanical tests, such as tensile and flexural tests, showed that mechanical properties of the composite were enhanced by addition of nano α-Al2O3 particles and dispersant agent to the polymer. Tensile strength was approximately ∼16% higher than pure PP by increasing the nano α-Al2O3 loading from 1 to 4 wt% into the PP matrix. The results of flexural analysis indicated that the maximum values of flexural strength and flexural modulus for nanocomposite without dispersant were 50.5 and 1954 MPa and for nanocomposite with dispersant were 55.88 MPa and 2818 MPa, respectively. However, higher concentration of nano α-Al2O3 loading resulted in reduction of those mechanical properties that could be due to agglomeration of nano α-Al2O3 particles. Transmission and scanning electron microscopic observations of the nanocomposites also showed that fracture surface became rougher by increasing the content of filler loading from 1 to 4% wt. PMID:24688421

  15. Interface states in Al2O3/AlGaN/GaN metal-oxide-semiconductor structure by frequency dependent conductance technique

    NASA Astrophysics Data System (ADS)

    Liao, Xue-Yang; Zhang, Kai; Zeng, Chang; Zheng, Xue-Feng; En, Yun-Fei; Lai, Ping; Hao, Yue

    2014-05-01

    Frequency dependent conductance measurements are implemented to investigate the interface states in Al2O3/AlGaN/GaN metal-oxide-semiconductor (MOS) structures. Two types of device structures, namely, the recessed gate structure (RGS) and the normal gate structure (NGS), are studied in the experiment. Interface trap parameters including trap density Dit, trap time constant τit, and trap state energy ET in both devices have been determined. Furthermore, the obtained results demonstrate that the gate recess process can induce extra traps with shallower energy levels at the Al2O3/AlGaN interface due to the damage on the surface of the AlGaN barrier layer resulting from reactive ion etching (RIE).

  16. In situ Formed α-Al2O3 Nanocrystals Repaired the Preexisting Microcracks in Plasma-Sprayed Al2O3 Coating via Stress-Induced Phase Transformation

    NASA Astrophysics Data System (ADS)

    Yang, Kai; Feng, Jingwei; Rong, Jian; Liu, Chenguang; Tao, Shunyan; Ding, Chuanxian

    2016-02-01

    In the present study, the phase composition and generation mechanism of the nanocrystals located in the microcracks of plasma-sprayed Al2O3 coating were reevaluated. The Al2O3 coatings were investigated using transmission electron microscopy and x-ray diffraction. We supply the detailed explanations to support the new viewpoint that in situ formation of α-Al2O3 nanocrystals in the preexisting microcracks of the as-sprayed Al2O3 coating may be due to the stress-induced phase transformation. Owing to the partially coherent relationship, the phase interfaces between the α-Al2O3 nanocrystals with the preferred orientation and the γ-Al2O3 matrix may possess better bonding strength. The α-Al2O3 nanocrystals could repair the microcracks in the coating, which further strengthens grain boundaries. Grain boundary strengthening is beneficial to the coating fracture toughness enhancement.

  17. Magnetic field control and wavelength tunability of SPP excitations using Al2O3/SiO2/Fe structures

    NASA Astrophysics Data System (ADS)

    Kaihara, Terunori; Shimizu, Hiromasa; Cebollada, Alfonso; Armelles, Gaspar

    2016-09-01

    Here, we show the high wavelength tunability and magnetic field modulation of surface plasmon polaritons (SPPs) of a waveguide mode that Double-layer Dielectrics and Ferromagnetic Metal, Al2O3/SiO2/Fe, trilayer structures exhibit when excited in the Otto configuration of attenuated total reflection setup. First by modeling, and then experimentally, we demonstrate that it is possible to tune the wavelength at which the angular dependent reflectance of these structures reaches its absolute minimum by simply adjusting the SiO2 intermediate dielectric layer thickness. This precise wavelength corresponds to the cut-off condition of SPPs' waveguide mode supported by the proposed structure, and it can be then switched between two values upon magnetization reversal of the Fe layer. In this specific situation, a large enhancement of the transverse magneto-optical effect is also obtained.

  18. Anchorage of γ-Al2O3 nanoparticles on nitrogen-doped multiwalled carbon nanotubes

    DOE PAGES

    Rodríguez-Pulido, A.; Martínez-Gutiérrez, H.; Calderon-Polania, G. A.; Lozano, M. A. Gonzalez; Cullen, D. A.; Terrones, H.; Smith, D. J.; Terrones, M.

    2016-06-07

    Nitrogen-doped multiwalled carbon nanotubes (CNx-MWNTs) have been decorated with γ-Al2O3 nanoparticles by a novel method. This process involved a wet chemical approach in conjunction with thermal treatment. During the particle anchoring process, individual CNx-MWNT nanotubes agglomerated into bundles, resulting in arrays of aligned CNx-MWNT coated with γ-Al2O3. Extensive characterization of the resulting γ-Al2O3/CNx-MWNT bundles was performed using a range of electron microscopy imaging and microanalytical techniques. In conclusion, a possible mechanism explaining the nanobundle alignment is described, and possible applications of these materials for the fabrication of ceramic composites using CNx-MWNTs are briefly discussed.

  19. Glycerol Steam Reforming Over Ni-Fe-Ce/Al2O3 Catalyst: Effect of Cerium.

    PubMed

    Go, Gwang-Sub; Go, Yoo-Jin; Lee, Hong-Joo; Moon, Dong-Ju; Park, Nam-Cook; Kim, Young-Chul

    2016-02-01

    In this work, hydrogen production from glycerol by steam reforming was studied using Ni-metal oxide catalysts. Ni-based catalyst becomes deactivated during steam reforming reactions because of coke deposits and sintering. Therefore, the aim of this study was to reduce carbon deposits and sintering on the catalyst surface by adding a promoter. Ni-metal oxide catalysts supported on Al2O3 were prepared via impregnation method, and the calcined catalyst was reduced under H2 flow for 2 h prior to the reaction. The characteristics of the catalysts were examined by XRD, TPR, TGA, and SEM. The Ni-Fe-Ce/Al2O3 catalyst, which contained less than 2 wt% Ce, showed the highest hydrogen selectivity and glycerol conversion. Further analysis of the catalysts revealed that the Ni-Fe-Ce/Al2O3 catalyst required a lower reduction temperature and produced minimum carbon deposit. PMID:27433687

  20. Glycerol Steam Reforming Over Ni-Fe-Ce/Al2O3 Catalyst: Effect of Cerium.

    PubMed

    Go, Gwang-Sub; Go, Yoo-Jin; Lee, Hong-Joo; Moon, Dong-Ju; Park, Nam-Cook; Kim, Young-Chul

    2016-02-01

    In this work, hydrogen production from glycerol by steam reforming was studied using Ni-metal oxide catalysts. Ni-based catalyst becomes deactivated during steam reforming reactions because of coke deposits and sintering. Therefore, the aim of this study was to reduce carbon deposits and sintering on the catalyst surface by adding a promoter. Ni-metal oxide catalysts supported on Al2O3 were prepared via impregnation method, and the calcined catalyst was reduced under H2 flow for 2 h prior to the reaction. The characteristics of the catalysts were examined by XRD, TPR, TGA, and SEM. The Ni-Fe-Ce/Al2O3 catalyst, which contained less than 2 wt% Ce, showed the highest hydrogen selectivity and glycerol conversion. Further analysis of the catalysts revealed that the Ni-Fe-Ce/Al2O3 catalyst required a lower reduction temperature and produced minimum carbon deposit.

  1. Optical and x-ray photoelectron spectroscopy studies of α-Al2O3

    NASA Astrophysics Data System (ADS)

    Prakash, Ram; Kumar, Sandeep; Kumar, Vinay; Choudhary, R. J.; Phase, D. M.

    2016-05-01

    α-Al2O3 powder sample was synthesized at 550 °C via solution combustion synthesis (SCS) method using urea as an organic fuel. The sample was characterized by X-ray diffraction (XRD), Optical spectroscopy and X-ray photoelectron spectroscopy (XPS) without any further thermal treatment. XRD study reveals that the powder crystallized directly in the hexagons α-Al2O3 phase. A band gap of 5.7 eV was estimated using diffuse reflectance spectra. For surface investigation X-ray photo electron spectroscopy (XPS) was carried out. The XPS survey scan study of α-Al2O3 powder reveals that the sample is free from impurity. The core levels of Al-2s and O-1s are also reported.

  2. HRTEM observation of bonding interface between Ce-TZP/Al2O3 nanocomposite and porcelain.

    PubMed

    Ban, Seiji; Nawa, Masahiro; Sugata, Fumio; Tsuruki, Jiro; Kono, Hiroshi; Kawai, Tatsushi

    2014-01-01

    The surface of a ceria-stabilized tetragonal zirconia polycrystal (Ce-TZP/Al2O3) nanocomposite was sandblasted by alumina particles and veneered with feldspathic porcelain via a conventional condensation method. The part of each specimen containing the interface layer was sliced to ultrathin sections with an argon ion slicer, and these sliced sections were observed using high-resolution transmission electron microscopy (HRTEM). For both interfaces, Ce-TZP/porcelain and Al2O3/porcelain, no transition layers due to abrupt changes in atomic distributions were observed. Besides, the porcelain layers of both interfaces consisted of homogeneous amorphous phases. These results suggested that both Ce-TZP and Al2O3 could be directly bonded to porcelain by Van der Waals forces arising from the close contact between them.

  3. Electrical conductivity studies on CuBr containing Al2O3 particles

    NASA Technical Reports Server (NTRS)

    Dubec, P. M.; Wagner, J. B., Jr.

    1984-01-01

    The conductivity of CuBr was studied and the role of a second phase, Al2O3, dispersed in CuBr was tested. CuBr melts at 493 C and exhibits three phases in the solid state. CuBr is a good ionic conductor with a transport number for copper ions of virtually unity with weighed proportions of the appropriate chemicals used. The CuBr materials were heated above melting point of CuBr, and the samples were sandwiched between copper electrodes. The ac conductivity, was determined at 1 kHz between 25 and 440 C depending on the sample. It was shown that at low temperatures, the conductivity for CuBr (Al2O3) increased by as much as 100, whereas in the beta phase the conductivity of CuBr containing Al2O3 decreased. The electrical conductivity studies are in agreement with earlier data.

  4. Atomic layer deposition of Al-doped ZnO/Al2O3 double layers on vertically aligned carbon nanofiber arrays.

    PubMed

    Malek, Gary A; Brown, Emery; Klankowski, Steven A; Liu, Jianwei; Elliot, Alan J; Lu, Rongtao; Li, Jun; Wu, Judy

    2014-05-14

    High-aspect-ratio, vertically aligned carbon nanofibers (VACNFs) were conformally coated with aluminum oxide (Al2O3) and aluminum-doped zinc oxide (AZO) using atomic layer deposition (ALD) in order to produce a three-dimensional array of metal-insulator-metal core-shell nanostructures. Prefunctionalization before ALD, as required for initiating covalent bonding on a carbon nanotube surface, was eliminated on VACNFs due to the graphitic edges along the surface of each CNF. The graphitic edges provided ideal nucleation sites under sequential exposures of H2O and trimethylaluminum to form an Al2O3 coating up to 20 nm in thickness. High-resolution transmission electron microscopy (HRTEM) and scanning electron microscopy images confirmed the conformal core-shell AZO/Al2O3/CNF structures while energy-dispersive X-ray spectroscopy verified the elemental composition of the different layers. HRTEM selected area electron diffraction revealed that the as-made Al2O3 by ALD at 200 °C was amorphous, and then, after annealing in air at 450 °C for 30 min, was converted to polycrystalline form. Nevertheless, comparable dielectric constants of 9.3 were obtained in both cases by cyclic voltammetry at a scan rate of 1000 V/s. The conformal core-shell AZO/Al2O3/VACNF array structure demonstrated in this work provides a promising three-dimensional architecture toward applications of solid-state capacitors with large surface area having a thin, leak-free dielectric.

  5. Atomic layer deposition of Al-doped ZnO/Al2O3 double layers on vertically aligned carbon nanofiber arrays.

    PubMed

    Malek, Gary A; Brown, Emery; Klankowski, Steven A; Liu, Jianwei; Elliot, Alan J; Lu, Rongtao; Li, Jun; Wu, Judy

    2014-05-14

    High-aspect-ratio, vertically aligned carbon nanofibers (VACNFs) were conformally coated with aluminum oxide (Al2O3) and aluminum-doped zinc oxide (AZO) using atomic layer deposition (ALD) in order to produce a three-dimensional array of metal-insulator-metal core-shell nanostructures. Prefunctionalization before ALD, as required for initiating covalent bonding on a carbon nanotube surface, was eliminated on VACNFs due to the graphitic edges along the surface of each CNF. The graphitic edges provided ideal nucleation sites under sequential exposures of H2O and trimethylaluminum to form an Al2O3 coating up to 20 nm in thickness. High-resolution transmission electron microscopy (HRTEM) and scanning electron microscopy images confirmed the conformal core-shell AZO/Al2O3/CNF structures while energy-dispersive X-ray spectroscopy verified the elemental composition of the different layers. HRTEM selected area electron diffraction revealed that the as-made Al2O3 by ALD at 200 °C was amorphous, and then, after annealing in air at 450 °C for 30 min, was converted to polycrystalline form. Nevertheless, comparable dielectric constants of 9.3 were obtained in both cases by cyclic voltammetry at a scan rate of 1000 V/s. The conformal core-shell AZO/Al2O3/VACNF array structure demonstrated in this work provides a promising three-dimensional architecture toward applications of solid-state capacitors with large surface area having a thin, leak-free dielectric. PMID:24689702

  6. Rapid fabrication of Al2O3 encapsulations for organic electronic devices

    NASA Astrophysics Data System (ADS)

    Ali, Kamran; Ali, Junaid; Mehdi, Syed Murtuza; Choi, Kyung-Hyun; An, Young Jin

    2015-10-01

    Organic electronics have earned great reputation in electronic industry yet they suffer technical challenges such as short lifetimes and low reliability because of their susceptibility to water vapor and oxygen which causes their fast degradation. This paper report on the rapid fabrication of Al2O3 encapsulations through a unique roll-to-roll atmospheric atomic layer deposition technology (R2R-AALD) for the life time enhancement of organic poly (4-vinylphenol) (PVP) memristor devices. The devices were then categorized into two sets. One was processed with R2R-AALD Al2O3 encapsulations at 50 °C and the other one was kept as un-encapsulated. The field-emission scanning electron microscopy (FESEM) results revealed that pin holes and other irregularities in PVP films with average arithmetic roughness (Ra) of 9.66 nm have been effectively covered by Al2O3 encapsulation having Ra of 0.92 nm. The X-ray photoelectron spectroscopy XPS spectrum for PVP film showed peaks of C 1s and O 1s at the binding energies of 285 eV and 531 eV, respectively. The respective appearance of Al 2p, Al 2s, and O 1s peaks at the binding energies of 74 eV, 119 eV, and 531 eV, confirms the fabrication of Al2O3 films. Electrical current-voltage (I-V) measurements confirmed that the Al2O3 encapsulation has a huge influence on the performance, robustness and life time of memristor devices. The Al2O3 encapsulated memristor performed with superior stability for four weeks whereas the un-encapsulated devices could only last for one week. The performance of encapsulated device had been promising after being subjected to bending test for 100 cycles and the variations in its stability were of minor concern confirming the mechanical robustness and flexibility of the devices.

  7. Reactive Plasma Nitriding of AL2O3 Powder in Thermal Spray

    NASA Astrophysics Data System (ADS)

    Shahien, Mohammed; Yamada, Motohiro; Yasui, Toshiaki; Fukumoto, Masahiro

    Among advanced ceramics, aluminum nitride (AlN) had attracted much attention in the field of electrical and structural applications due to its outstanding properties. However, it is difficult to fabricate AlN coating by conventional thermal spray processes directly. Due to the thermal decomposition of feedstock AlN powder during spraying without a stable melting phase (which is required for deposition in thermal spray). Reactive plasma spraying (RPS) has been considered as a promising technology for in-situ formation of AlN thermally sprayed coatings. In this study the possibility of fabrication of AlN coating by reactive plasma nitriding of alumina (Al2O3) powder using N2/H2 plasma was investigated. It was possible to fabricate a cubic-AlN (c-AlN) based coating and the fabricated coating consists of c-AlN, α-Al2O3, Al5O6N and γ-Al2O3. It was difficult to understand the nitriding process from the fabricated coatings. Therefore, the Al2O3 powders were sprayed and collected in water. The microstructure observation of the collected powder and its cross section indicate that the reaction started from the surface. Thus, the sprayed particles were melted and reacted in high temperature reactive plasma and formed aluminum oxynitride which has cubic structure and easily nitride to c-AlN. During the coatings process the particles collide, flatten, and rapidly solidified on a substrate surface. The rapid solidification on the substrate surface due to the high quenching rate of the plasma flame prevents AlN crystal growth to form the hexagonal phase. Therefore, it was possible to fabricate c-AlN/Al2O3 based coatings through reactive plasma nitriding reaction of Al2O3 powder in thermal spray.

  8. Charge trapping behavior and its origin in Al2O3/SiC MIS system

    NASA Astrophysics Data System (ADS)

    Liu, Xin-Yu; Wang, Yi-Yu; Peng, Zhao-Yang; Li, Cheng-Zhan; Wu, Jia; Bai, Yun; Tang, Yi-Dan; Liu, Ke-An; Shen, Hua-Jun

    2015-08-01

    Charge trapping behavior and its origin in Al2O3/SiC MOS structure are investigated by analyzing the capacitance-voltage (C-V) hysteresis and the chemical composition of the interface. The C-V hysteresis is measured as a function of oxide thickness series for an Al2O3/SiC MIS capacitor. The distribution of the trapped charges, extracted from the C-V curves, is found to mainly follow a sheet charge model rather than a bulk charge model. Therefore, the electron injection phenomenon is evaluated by using linear fitting. It is found that most of the trapped charges are not distributed exactly at the interface but are located in the bulk of the Al2O3 layers, especially close to the border. Furthermore, there is no detectable oxide interface layer in the x-ray photoelectron spectroscope (XPS) and transmission electron microscope (TEM) measurements. In addition, Rutherford back scattering (RBS) analysis shows that the width of the Al2O3/SiC interface is less than 1 nm. It could be concluded that the charge trapping sites in Al2O3/SiC structure might mainly originate from the border traps in Al2O3 film rather than the interface traps in the interfacial transition layer. Project supported by the National Natural Science Foundation of China (Grant No. 61106080) and the National Science and Technology Major Project of the Ministry of Science and Technology of China (Grant No. 2013ZX02305).

  9. In2O3/Al2O3 Catalysts for NOx Reduction in Lean Condition

    SciTech Connect

    Park, Paul W.; Ragle, Christie; Boyer, Carrie S.; Balmer, M Lou; Engelhard, Mark H. ); McCready, David E. )

    2002-01-01

    The lean NOx performance and catalytic properties of In2O3/Al2O3 catalysts were investigated. High lean NOx activity was observed when propene was used as a reductant in the presence of 9% O2 and 7% H2O at a space velocity of 30,000h-1. The optimum lean NOx activity of In2O3/Al2O3 catalysts was observed at a loading of 2.5 wt.% indium on -Al2O3 which was prepared by a sol-gel technique (230 m2/g). When propane was used as a reductant, the In2O3/Al2O3 catalyst did not promote NOx reduction compared to the alumina substrate. X-ray photoelectron spectroscopy (XPS), X-ray diffraction (XRD) and temperature programmed reduction (TPR) have been used to characterize a series of In2O3/Al2O3 catalysts to better understand the surface structure of indium oxide species on the alumina support. The XRD data indicated that crystalline In2O3 was present at In2O3 loadings > 5wt.% and the quantity of the crystalline phase increased as a function of indium loading. XPS results suggested that indium oxide existed as a well-dispersed phase up to 10wt.% indium. The well dispersed or reducible indium oxide species below 400 C in TPR experiments were assigned as the sites which activate propene to oxygenated hydrocarbons such as acetaldehyde and acrolein. Alumina sites readily utilize the oxygenated hydrocarbons to reduce NOx. Dual-function mechanism was proposed to explain NOx reduction over In2O3/Al2O3 catalysts.

  10. Effect of AL2O3 and TiO2 nanoparticles on aquatic organisms

    NASA Astrophysics Data System (ADS)

    Gosteva, I.; Morgalev, Yu; Morgaleva, T.; Morgalev, S.

    2015-11-01

    Environmental toxicity of aqueous disperse systems of nanoparticles of binary compounds of titanium dioxides (with particle size Δ50=5 nm, Δ50=50 nm, Δ50=90 nm), aluminum oxide alpha-forms (Δ50=7 nm and Δ50=70 nm) and macro forms (TiO2 Δ50=350 nm, Al2O3 A50=4000 nm) were studied using biological testing methods. The bioassay was performed using a set of test organisms representing the major trophic levels. We found the dependence of the toxic effect concentration degree of nTiO2 and nAl2O3 on the fluorescence of the bacterial biosensor "Ekolyum", the chemotactic response of ciliates Paramecium caudatum, the growth of unicellular algae Chlorella vulgaris Beijer and mortality of entomostracans Daphnia magna Straus. We revealed the selective dependence of nTiO2 and nAl2O3 toxicity on the size, concentration and chemical nature of nanoparticles. The minimal concentration causing an organism's response on nTiO2 and nAl2O3 effect depends on the type of the test- organism and the test reaction under study. We specified L(E)C50 and acute toxicity categories for all the studied nanoparticles. We determined that nTiO2 (Δ50=5 nm) belong to the category «Acute toxicity 1», nTiO2 (A50=90 nm) and nAl2O3 (Δ50=70 nm) - to the category «Acute toxicity 2», nAl2O3 (Δ50=7 nm) - to the category «Acute toxicity 3». No acute toxicity was registered for nTiO2 (Δ50=50 nm) and macro form TiO2.

  11. Pt-Al2O3 interfaces in cofired ceramics for use in miniaturized neuroprosthetic implants.

    PubMed

    Guenther, Thomas; Kong, Charlie; Lu, Hong; Svehla, Martin J; Lovell, Nigel H; Ruys, Andrew; Suaning, Gregg J

    2014-04-01

    A core element to miniaturized, hermetic encapsulations for neuroprosthetic implants with high numbers of stimulation channels is the creation of electrical feedthroughs. Platinum (Pt) and alumina (Al2 O3 ) are necessary to connect the sealed electronics to external components including electrode arrays that provide a neural interface function, as well as to sources of power or data. Combined with laser micro-processing, high-density feedthrough arrays were created with up to 2500 channels per cm(2) . The chemistry, micro structure, and crystallography of the Pt-Al2 O3 interface created by the cofiring of Pt particles and Al2 O3 particulate in binder were studied by transmission electron microscopy (TEM), energy dispersive spectroscopy (EDS) and selective area electron diffraction (SAED) to determine the nature of the Pt-Al2 O3 bond. While Pt-Al2 O3 interfaces only occurred in cases where the different grains were in distinct orientations where the crystal lattices matched, the addition of glass additives allowed for bonding nonmatching orientations by devitrification to form Pt-glass-Al2 O3 interfaces. The conditions for the formation of both mechanisms were determined, and it was shown that higher order crystal planes than previously described can be matched. Analyzing the lattice matches in detail showed the ability of the material compound to compensate for mismatches by the formation of dislocations, out-of-angle matching, lattice distortion, and the existence of semi-coherent interfaces in case of integer misfit ratios to create domain matching. PMID:24106159

  12. Interface Engineering for Atomic Layer Deposited Alumina Gate Dielectric on SiGe Substrates.

    PubMed

    Zhang, Liangliang; Guo, Yuzheng; Hassan, Vinayak Vishwanath; Tang, Kechao; Foad, Majeed A; Woicik, Joseph C; Pianetta, Piero; Robertson, John; McIntyre, Paul C

    2016-07-27

    Optimization of the interface between high-k dielectrics and SiGe substrates is a challenging topic due to the complexity arising from the coexistence of Si and Ge interfacial oxides. Defective high-k/SiGe interfaces limit future applications of SiGe as a channel material for electronic devices. In this paper, we identify the surface layer structure of as-received SiGe and Al2O3/SiGe structures based on soft and hard X-ray photoelectron spectroscopy. As-received SiGe substrates have native SiOx/GeOx surface layers, where the GeOx-rich layer is beneath a SiOx-rich surface. Silicon oxide regrows on the SiGe surface during Al2O3 atomic layer deposition, and both SiOx and GeOx regrow during forming gas anneal in the presence of a Pt gate metal. The resulting mixed SiOx-GeOx interface layer causes large interface trap densities (Dit) due to distorted Ge-O bonds across the interface. In contrast, we observe that oxygen-scavenging Al top gates decompose the underlying SiOx/GeOx, in a selective fashion, leaving an ultrathin SiOx interfacial layer that exhibits dramatically reduced Dit. PMID:27345195

  13. High Temperature Aerogels in the Al2O3-SiO2 System

    NASA Technical Reports Server (NTRS)

    Hurwitz, Frances I.; Aranda, Denisse V.; Gallagher, Meghan E.

    2008-01-01

    Al2O3-SiO2 aerogels are of interest as constituents of thermal insulation systems for use at high temperatures. Al2O3 and mullite aerogels are expected to crystallize at higher temperatures than their SiO2 counterparts, hence avoiding the shrinkages that accompany the formation of lower temperature SiO2 phases and preserving pore structures into higher temperature regimes. The objective of this work is to determine the influence of processing parameters on shrinkage, gel structure (including surface area, pore size and distribution) and pyrolysis behavior.

  14. Study of the KNO3-Al2O3 system by differential scanning calorimetry

    NASA Astrophysics Data System (ADS)

    Amirov, A. M.; Gafurov, M. M.; Rabadanov, K. Sh.

    2016-09-01

    The structural and the thermodynamic properties of potassium nitrate KNO3 and its composites with nanosized aluminum oxide Al2O3 have been studied by differential scanning calorimetry. It has been found that an amorphous phase forms in composites (1- x)KNO3- x Al2O3. The thermal effect corresponding to this phase has been observed at 316°C. It has been found that the phase transition heats of potassium nitrate decreased as the aluminum oxide fraction increased.

  15. The Influence of Al2O3 Powder Morphology on the Properties of Cu-Al2O3 Composites Designed for Functionally Graded Materials (FGM)

    NASA Astrophysics Data System (ADS)

    Strojny-Nędza, Agata; Pietrzak, Katarzyna; Węglewski, Witold

    2016-08-01

    In order to meet the requirements of an increased efficiency applying to modern devices and in more general terms science and technology, it is necessary to develop new materials. Combining various types of materials (such as metals and ceramics) and developing composite materials seem to be suitable solutions. One of the most interesting materials includes Cu-Al2O3 composite and gradient materials (FGMs). Due to their potential properties, copper-alumina composites could be used in aerospace industry as rocket thrusters and components in aircraft engines. The main challenge posed by copper matrix composites reinforced by aluminum oxide particles is obtaining the uniform structure with no residual porosity (existing within the area of the ceramic phase). In the present paper, Cu-Al2O3 composites (also in a gradient form) with 1, 3, and 5 vol.% of aluminum oxide were fabricated by the hot pressing and spark plasma sintering methods. Two forms of aluminum oxide (αAl2O3 powder and electrocorundum) were used as a reinforcement. Microstructural investigations revealed that near fully dense materials with low porosity and a clear interface between the metal matrix and ceramics were obtained in the case of the SPS method. In this paper, the properties (mechanical, thermal, and tribological) of composite materials were also collected and compared. Technological tests were preceded by finite element method analyses of thermal stresses generated in the gradient structure, and additionally, the role of porosity in the formation process of composite properties was modeled. Based on the said modeling, technological conditions for obtaining FGMs were proposed.

  16. The Influence of Al2O3 Powder Morphology on the Properties of Cu-Al2O3 Composites Designed for Functionally Graded Materials (FGM)

    NASA Astrophysics Data System (ADS)

    Strojny-Nędza, Agata; Pietrzak, Katarzyna; Węglewski, Witold

    2016-07-01

    In order to meet the requirements of an increased efficiency applying to modern devices and in more general terms science and technology, it is necessary to develop new materials. Combining various types of materials (such as metals and ceramics) and developing composite materials seem to be suitable solutions. One of the most interesting materials includes Cu-Al2O3 composite and gradient materials (FGMs). Due to their potential properties, copper-alumina composites could be used in aerospace industry as rocket thrusters and components in aircraft engines. The main challenge posed by copper matrix composites reinforced by aluminum oxide particles is obtaining the uniform structure with no residual porosity (existing within the area of the ceramic phase). In the present paper, Cu-Al2O3 composites (also in a gradient form) with 1, 3, and 5 vol.% of aluminum oxide were fabricated by the hot pressing and spark plasma sintering methods. Two forms of aluminum oxide (αAl2O3 powder and electrocorundum) were used as a reinforcement. Microstructural investigations revealed that near fully dense materials with low porosity and a clear interface between the metal matrix and ceramics were obtained in the case of the SPS method. In this paper, the properties (mechanical, thermal, and tribological) of composite materials were also collected and compared. Technological tests were preceded by finite element method analyses of thermal stresses generated in the gradient structure, and additionally, the role of porosity in the formation process of composite properties was modeled. Based on the said modeling, technological conditions for obtaining FGMs were proposed.

  17. Atomic layer deposition of highly-doped Er:Al2O3 and Tm:Al2O3 for silicon-based waveguide amplifiers (Conference Presentation)

    NASA Astrophysics Data System (ADS)

    Roenn, John; Karvonen, Lasse; Pyymäki-Perros, Alexander; Peyghambarian, Nasser; Lipsanen, Harri; Säynätjoki, Antti; Sun, Zhipei

    2016-05-01

    Recently, rare-earth doped waveguide amplifiers (REDWAs) have drawn significant attention as a promising solution to on-chip amplification of light in silicon photonics and integrated optics by virtue of their high excited state lifetime (up to 10 ms) and broad emission spectrum (up to 200 nm) at infrared wavelengths. In the family of rare-earths, at least erbium, holmium, thulium, neodymium and ytterbium have been demonstrated to be good candidates for amplifier operation at moderate concentrations (< 0.1 %). However, efficient amplifier operation in REDWAs is a very challenging task because high concentration of ions (<0.1%) is required in order to produce reasonable amplification over short device length. Inevitably, high concentration of ions leads to energy-transfer between neighboring ions, which results as decreased gain and increased noise in the amplifier system. It has been shown that these energy-transfer mechanisms in highly-doped gain media are inversely proportional to the sixth power of the distance between the ions. Therefore, novel fabrication techniques with the ability to control the distribution of the rare-earth ions within the gain medium are urgently needed in order to fabricate REDWAs with high efficiency and low noise. Here, we show that atomic layer deposition (ALD) is an excellent technique to fabricate highly-doped (<1%) RE:Al2O3 gain materials by using its nanoscale engineering ability to delicately control the incorporation of RE ions during the deposition. In our experiment, we fabricated Er:Al2O3 and Tm:Al2O3 thin films with ALD by varying the concentration of RE ions from 1% to 7%. By measuring the photoluminescence response of the fabricated samples, we demonstrate that it is possible to incorporate up to 5% of either Er- or Tm-ions in Al2O3 host before severe quenching occurs. We believe that this technique can be extended to other RE ions as well. Therefore, our results show the exceptionality of ALD as a deposition technique for

  18. An Al@Al2O3@SiO2/polyimide composite with multilayer coating structure fillers based on self-passivated aluminum cores

    NASA Astrophysics Data System (ADS)

    Zhou, Yongcun; Wang, Hong

    2013-04-01

    We demonstrate a capability in combining two kinds of nanosize and microsize particles of core-shell Al@Al2O3@SiO2 with aluminum cores to form multilayer coating structures as fillers in polyimide matrix for electronic applications. The core-shell Al@Al2O3@SiO2 structure can effectively adjust the relative permittivity (about 12 @1 MHz) of the composite while keeping lower dielectric loss (0.015 @1 MHz) compared to that uncoated aluminum particles. The combination of "macro" and "micro" coating can significantly improve the dielectric properties of the composites. This work provides a useful method to modify the fillers for polymer matrix nanocomposite materials.

  19. Electrochemical Impedance Studies on Tribocorrosion Behavior of Plasma-Sprayed Al2O3 Coatings

    NASA Astrophysics Data System (ADS)

    Liu, Zhe; Chu, Zhenhua; Chen, Xueguang; Dong, Yanchun; Yang, Yong; Li, Yingzhen; Yan, Dianran

    2015-06-01

    In this paper, the tribocorrosion of plasma-sprayed Al2O3 coatings in simulated seawater was investigated by electrochemical impedance spectroscopy (EIS) technique, complemented by scanning electron microscopy to observe the morphology of the tribocorrosion attack. Base on EIS of plasma-sprayed Al2O3 coatings undergoing long-time immersion in simulated seawater, the corrosion process of Al2O3 coatings can be divided into the earlier stage of immersion (up to 20 h) and the later stage (beyond 20 h). Then, the wear tests were carried out on the surface of Al2O3 coating undergoing different times of immersion to investigate the influence of wear on corrosion at different stages. The coexistence of wear and corrosion condition had been created by a boron nitride grinding head rotating on the surface of coatings corroded in simulated seawater. The measured EIS and the values of the fitting circuit elements showed that wear accelerated corrosion at the later stage, meanwhile, corrosion accelerated wear with the immersion time increasing.

  20. Optical observation of DNA translocation through Al2O3 sputtered silicon nanopores in porous membrane

    NASA Astrophysics Data System (ADS)

    Yamazaki, Hirohito; Ito, Shintaro; Esashika, Keiko; Taguchi, Yoshihiro; Saiki, Toshiharu

    2016-03-01

    Nanopore sensors are being developed as a platform for analyzing single DNA, RNA, and protein. In nanopore sensors, ionic current measurement is widely used and proof-of-concept of nanopore DNA sequencing by it has been demonstrated by previous studies. Recently, we proposed an alternative platform of nanopore DNA sequencing that incorporates ultraviolet light and porous silicon membrane to perform high-throughput measurement. In the development of our DNA sequencing platform, controlling nanopore size in porous silicon membrane is essential but remains a challenge. Here, we report on observation of DNA translocation through Al2O3 sputtered silicon nanopores (Al2O3 nanopores) by our optical scheme. Electromagnetic wave simulation was performed to analyze the excitation volume on Al2O3 nanopores generated by focused ultraviolet light. In the experiment, DNA translocation time through Al2O3 nanopores was compared with that of silicon nanopores and we examined the effect of nanopore density and thickness of membrane by supplementing the static electric field simulation.

  1. Enhanced Barrier Performance of Engineered Paper by Atomic Layer Deposited Al2O3 Thin Films.

    PubMed

    Mirvakili, Mehr Negar; Van Bui, Hao; van Ommen, J Ruud; Hatzikiriakos, Savvas G; Englezos, Peter

    2016-06-01

    Surface modification of cellulosic paper is demonstrated by employing plasma assisted atomic layer deposition. Al2O3 thin films are deposited on paper substrates, prepared with different fiber sizes, to improve their barrier properties. Thus, a hydrophobic paper is created with low gas permeability by combining the control of fiber size (and structure) with atomic layer deposition of Al2O3 films. Papers are prepared using Kraft softwood pulp and thermomechanical pulp. The cellulosic wood fibers are refined to obtain fibers with smaller length and diameter. Films of Al2O3, 10, 25, and 45 nm in thickness, are deposited on the paper surface. The work demonstrates that coating of papers prepared with long fibers efficiently reduces wettability with slight enhancement in gas permeability, whereas on shorter fibers, it results in significantly lower gas permeability. Wettability studies on Al2O3 deposited paper substrates have shown water wicking and absorption over time only in papers prepared with highly refined fibers. It is also shown that there is a certain fiber size at which the gas permeability assumes its minimum value, and further decrease in fiber size will reverse the effect on gas permeability.

  2. Investigation of Ti/Al2O3 joints with intermediate tantalum and niobium layers.

    PubMed

    Gibbesch, B; Elssner, G; Petzow, G

    1992-01-01

    The microstructure of TiTa30 alloys diffusion bonded to a 99.7 wt% Al2O3 ceramic was subdivided into a reaction double layer containing the intermetallic phases TiAl and Ti3Al and the (alpha + beta) Ti microstructure. Excellent fracture toughness data of the TiTa30/Al2O3 joints of about 37 J/m2 were obtained after welding at 1200 degrees C for 1 h. The fracture energies of the joints were strongly dependent on the welding temperature which also influenced the thickness of the reaction double layer. The uptake of aluminium and oxygen into the reaction layer and the metal caused an embrittlement and decreased the yield stress and ductility of the metal. Introducing an Nb or Ta layer between pure Ti and Al2O3 before welding resulted in high fracture energies of 40 J/m2 for the Ti/Al2O3 joints. The thermal-induced stresses at the metal-ceramic interface were reduced by the occurrence of an Nb- or Ta-enriched region. The intermediate metal foils also decreased the O and Al uptake of the metal and therefore reduced the brittleness of the reaction zone and the adjacent metal. The thermal-induced stresses at the metal-ceramic interface caused a deflection of the crack into the ceramic during fracture mechanical testing in four-point bending.

  3. Nanopore patterning using Al2O3 hard masks on SOI substrates

    NASA Astrophysics Data System (ADS)

    Wang, Xiaofeng; Goryll, Michael

    2015-07-01

    Aluminum oxide Al2O3, deposited using amorphous atomic layer deposition (ALD), is a very promising material to be utilized as a hard mask for nano-patterning. We used an aluminum oxide hard mask on a silicon-on-insulator (SOI) substrate to implement a sub-100 nm nanopore process. The transfer of nanoscale patterns via dry etching of the Al2O3 thin film was investigated by comparing etch profiles, etch rates, and selectivity of Al2O3 over PMMA resist, using different gas chemistries such as Cl2, Ar, Ar/BCl3 mixtures, and BCl3 plasma. A selectivity of 1:4 was observed using an inductively coupled plasma reactive ion etching (ICP-RIE) tool with BCl3 plasma, and the sub-100 nm nanopore patterns were anisotropically transferred to the alumina layer from a 250 nm PMMA layer. The dense and inert Al2O3 hard mask showed exceptional etch selectivity to Si and SiO2, which allowed the subsequent transfer of the nanopore patterns into the 340 nm-thick Si device layer and made it possible to attempt etching the 1 μm-thick buried oxide (BOX) layer. Using chlorine chemistry, nanopores patterned in the Si device layer showed excellent anisotropy while preserving the original pattern dimensions. The process demonstrated is ideally suited for patterning high aspect ratio nanofluidic structures.

  4. Crack-resistant Al2O3-SiO2 glasses.

    PubMed

    Rosales-Sosa, Gustavo A; Masuno, Atsunobu; Higo, Yuji; Inoue, Hiroyuki

    2016-01-01

    Obtaining "hard" and "crack-resistant" glasses have always been of great important in glass science and glass technology. However, in most commercial glasses both properties are not compatible. In this work, colorless and transparent xAl2O3-(100-x)SiO2 glasses (30 ≤ x ≤ 60) were fabricated by the aerodynamic levitation technique. The elastic moduli and Vickers hardness monotonically increased with an increase in the atomic packing density as the Al2O3 content increased. Although a higher atomic packing density generally enhances crack formation in conventional oxide glasses, the indentation cracking resistance increased by approximately seven times with an increase in atomic packing density in binary Al2O3-SiO2 glasses. In particular, the composition of 60Al2O3 • 40SiO2 glass, which is identical to that of mullite, has extraordinary high cracking resistance with high elastic moduli and Vickers hardness. The results indicate that there exist aluminosilicate compositions that can produce hard and damage-tolerant glasses. PMID:27053006

  5. Ce-TZP/Al2O3 nanocomposite as a bearing material in total joint replacement.

    PubMed

    Tanaka, Kenji; Tamura, Jiro; Kawanabe, Keiichi; Nawa, Masahiro; Oka, Masanori; Uchida, Masaki; Kokubo, Tadashi; Nakamura, Takashi

    2002-01-01

    The objectives of this study were to investigate the biocompatibility, phase stability, and wear properties of a newly developed Ce-TZP/Al(2)O(3) nanocomposite, as compared to conventional ceramics, and to determine whether the new composite could be used as a bearing material in total joint prostheses. In tests of mechanical properties, this composite showed significantly higher toughness than conventional Y-TZP. For biocompatibility tests, cylindrical specimens of both the Ce-TZP/Al(2)O(3) nanocomposite and monolithic alumina were implanted into the paraspinal muscles of male Wistar rats. The tissue reactions were almost the same, and at 24 weeks after implantation, thin fibrous capsules with almost no inflammation were observed around both of them. There were no significant differences in membrane thickness between the two ceramics. After hydrothermal treatment in 121 degrees C vapor for 18 h, the new composite showed complete resistance to aging degradation, whereas Y-TZP showed a phase transformation of 25.3 vol% (initial 0.4%) to the monoclinic form. According to the results of pin-on-disk tests, the wear rates of Ce-TZP/Al(2)O(3) nanocomposite and alumina were 0.55 +/- 0.04 x 10(-7) and 2.12 +/- 0.37 x 10(-7)mm(3)/Nm, respectively. The results of this study suggest that the Ce-TZP/Al(2)O(3) nanocomposite is a promising alternative ceramic component for total joint replacement.

  6. Enhanced Barrier Performance of Engineered Paper by Atomic Layer Deposited Al2O3 Thin Films.

    PubMed

    Mirvakili, Mehr Negar; Van Bui, Hao; van Ommen, J Ruud; Hatzikiriakos, Savvas G; Englezos, Peter

    2016-06-01

    Surface modification of cellulosic paper is demonstrated by employing plasma assisted atomic layer deposition. Al2O3 thin films are deposited on paper substrates, prepared with different fiber sizes, to improve their barrier properties. Thus, a hydrophobic paper is created with low gas permeability by combining the control of fiber size (and structure) with atomic layer deposition of Al2O3 films. Papers are prepared using Kraft softwood pulp and thermomechanical pulp. The cellulosic wood fibers are refined to obtain fibers with smaller length and diameter. Films of Al2O3, 10, 25, and 45 nm in thickness, are deposited on the paper surface. The work demonstrates that coating of papers prepared with long fibers efficiently reduces wettability with slight enhancement in gas permeability, whereas on shorter fibers, it results in significantly lower gas permeability. Wettability studies on Al2O3 deposited paper substrates have shown water wicking and absorption over time only in papers prepared with highly refined fibers. It is also shown that there is a certain fiber size at which the gas permeability assumes its minimum value, and further decrease in fiber size will reverse the effect on gas permeability. PMID:27165172

  7. Plasma etching behavior of Y2O3 ceramics: Comparative study with Al2O3

    NASA Astrophysics Data System (ADS)

    Cao, Yu-Chao; Zhao, Lei; Luo, Jin; Wang, Ke; Zhang, Bo-Ping; Yokota, Hiroki; Ito, Yoshiyasu; Li, Jing-Feng

    2016-03-01

    The plasma etching behavior of Y2O3 coating was investigated and compared with that of Al2O3 coating under various conditions, including chemical etching, mixing etching and physical etching. The etching rate of Al2O3 coating declined with decreasing CF4 content under mixing etching, while that of Y2O3 coating first increased and then decreased. In addition, the Y2O3 coating demonstrated higher erosion-resistance than Al2O3 coating after exposing to fluorocarbon plasma. X-ray photoelectron spectroscopy (XPS) analysis confirmed the formations of YF3 and AlF3 on the Y2O3 and Al2O3 coatings, respectively, which acted as the protective layer to prevent the surface from further erosion with fluorocarbon plasma. It was revealed that the etching behavior of Y2O3 depended not only on the surface fluorination but also on the removal of fluoride layer. To analyze the effect of porosity, Y2O3 bulk samples with high density were prepared by spark plasma sintering, and they demonstrated higher erosion-resistances compared with Y2O3 coating.

  8. Consolidation of Al2O3/Al Nanocomposite Powder by Cold Spray

    NASA Astrophysics Data System (ADS)

    Poirier, Dominique; Legoux, Jean-Gabriel; Drew, Robin A. L.; Gauvin, Raynald

    2011-01-01

    While the improvement in mechanical properties of nanocomposites makes them attractive materials for structural applications, their processing still presents significant challenges. In this article, cold spray was used to consolidate milled Al and Al2O3/Al nanocomposite powders as well as the initial unmilled and unreinforced Al powder. The microstructure and nanohardness of the feedstock powders as well as those of the resulting coatings were compared. The results show that the large increase in hardness of the Al powder after mechanical milling is preserved after cold spraying. Good quality coating with low porosity is obtained from milled Al. However, the addition of Al2O3 to the Al powder during milling decreases the powder and coating nanohardness. This lower hardness is attributed to non-optimized milling parameters leading to cracked particles with insufficient Al2O3 embedding in Al. The coating produced from the milled Al2O3/Al mixture also showed lower particle cohesion and higher amount of porosity.

  9. New fully bakeable and moveable vacuum seal between stainless steel and Al2O3 ceramic.

    PubMed

    Langenwalter, M; Grössl, M; Märk, T D

    1979-02-01

    The current paper describes a simple construction which allows the monitoring of the radial dependence of the extracted and mass identified ion currents in a hollow cathode stationary afterglow apparatus at any time during the afterglow. The main feature of the monitoring device is a fully bakeable and moveable vacuum seal between polished stainless steel and polished Al2O3 ceramic. PMID:18699481

  10. Crack-resistant Al2O3–SiO2 glasses

    NASA Astrophysics Data System (ADS)

    Rosales-Sosa, Gustavo A.; Masuno, Atsunobu; Higo, Yuji; Inoue, Hiroyuki

    2016-04-01

    Obtaining “hard” and “crack-resistant” glasses have always been of great important in glass science and glass technology. However, in most commercial glasses both properties are not compatible. In this work, colorless and transparent xAl2O3–(100–x)SiO2 glasses (30 ≤ x ≤ 60) were fabricated by the aerodynamic levitation technique. The elastic moduli and Vickers hardness monotonically increased with an increase in the atomic packing density as the Al2O3 content increased. Although a higher atomic packing density generally enhances crack formation in conventional oxide glasses, the indentation cracking resistance increased by approximately seven times with an increase in atomic packing density in binary Al2O3–SiO2 glasses. In particular, the composition of 60Al2O3•40SiO2 glass, which is identical to that of mullite, has extraordinary high cracking resistance with high elastic moduli and Vickers hardness. The results indicate that there exist aluminosilicate compositions that can produce hard and damage-tolerant glasses.

  11. Crack-resistant Al2O3–SiO2 glasses

    PubMed Central

    Rosales-Sosa, Gustavo A.; Masuno, Atsunobu; Higo, Yuji; Inoue, Hiroyuki

    2016-01-01

    Obtaining “hard” and “crack-resistant” glasses have always been of great important in glass science and glass technology. However, in most commercial glasses both properties are not compatible. In this work, colorless and transparent xAl2O3–(100–x)SiO2 glasses (30 ≤ x ≤ 60) were fabricated by the aerodynamic levitation technique. The elastic moduli and Vickers hardness monotonically increased with an increase in the atomic packing density as the Al2O3 content increased. Although a higher atomic packing density generally enhances crack formation in conventional oxide glasses, the indentation cracking resistance increased by approximately seven times with an increase in atomic packing density in binary Al2O3–SiO2 glasses. In particular, the composition of 60Al2O3•40SiO2 glass, which is identical to that of mullite, has extraordinary high cracking resistance with high elastic moduli and Vickers hardness. The results indicate that there exist aluminosilicate compositions that can produce hard and damage-tolerant glasses. PMID:27053006

  12. Self limiting atomic layer deposition of Al2O3 on perovskite surfaces: a reality?

    NASA Astrophysics Data System (ADS)

    Choudhury, Devika; Rajaraman, Gopalan; Sarkar, Shaibal K.

    2016-03-01

    The feasibility of self-saturated atomic layer deposition of Al2O3 on an organolead halide perovskite (MAPbI3-xClx) surface through a well known trimethylaluminium (TMA)-water (H2O) chemistry is studied. Though the sequential dosages of reactants form films on the perovskite surfaces, a self saturated growth is never observed. Self-saturation leads to the degradation of the material. Both experimental and density functional theory calculations are carried out for complete understanding of the growth mechanism of self-limiting Al2O3 on the perovskite surface.The feasibility of self-saturated atomic layer deposition of Al2O3 on an organolead halide perovskite (MAPbI3-xClx) surface through a well known trimethylaluminium (TMA)-water (H2O) chemistry is studied. Though the sequential dosages of reactants form films on the perovskite surfaces, a self saturated growth is never observed. Self-saturation leads to the degradation of the material. Both experimental and density functional theory calculations are carried out for complete understanding of the growth mechanism of self-limiting Al2O3 on the perovskite surface. Electronic supplementary information (ESI) available: Additional QCM results, FTIR spectra and DFT results. See DOI: 10.1039/c5nr06974b

  13. Operando Raman spectroscopy study on the deactivation of Pt/Al2O3 and Pt-Sn/Al2O3 propane dehydrogenation catalysts.

    PubMed

    Sattler, Jesper J H B; Beale, Andrew M; Weckhuysen, Bert M

    2013-08-01

    The deactivation of 0.5 wt% Pt/Al2O3 and 0.5 wt% Pt-1.5 wt% Sn/Al2O3 catalysts has been studied by operando Raman spectroscopy during the dehydrogenation of propane and subsequent regeneration in air for 10 successive dehydrogenation-regeneration cycles. Furthermore, the reaction feed was altered by using different propane/propene/hydrogen ratios. It was found that the addition of hydrogen to the feed increases the catalyst performance and decreases the formation of coke deposits, as was revealed by thermogravimetrical analysis. The positive effect of hydrogen on the catalyst performance is comparable to the addition of Sn, a promoter element which increases both the propane conversion and propene selectivity. Operando Raman spectroscopy showed that hydrogen altered the nature of the coke deposits formed during propane dehydrogenation. Due to this approach it was possible to perform a systematic deconvolution procedure on the Raman spectra. By analysing the related intensity, band position and bandwidth of the different Raman features, it was determined that smaller graphite crystallites, which have less defects, are formed when the partial pressure of hydrogen in the feed was increased. PMID:23615824

  14. Investigating the electronic properties of Al2O3/Cu(In,Ga)Se2 interface

    NASA Astrophysics Data System (ADS)

    Kotipalli, R.; Vermang, B.; Joel, J.; Rajkumar, R.; Edoff, M.; Flandre, D.

    2015-10-01

    Atomic layer deposited (ALD) Al2O3 films on Cu(In,Ga)Se2 (CIGS) surfaces have been demonstrated to exhibit excellent surface passivation properties, which is advantageous in reducing recombination losses at the rear metal contact of CIGS thin-film solar cells. Here, we report, for the first time, experimentally extracted electronic parameters, i.e. fixed charge density (Qf) and interface-trap charge density (Dit), for as-deposited (AD) and post-deposition annealed (PDA) ALD Al2O3 films on CIGS surfaces using capacitance-voltage (C-V) and conductance-frequency (G-f) measurements. These results indicate that the AD films exhibit positive fixed charges Qf (approximately 1012 cm-2), whereas the PDA films exhibit a very high density of negative fixed charges Qf (approximately 1013 cm-2). The extracted Dit values, which reflect the extent of chemical passivation, were found to be in a similar range of order (approximately 1012 cm-2 eV-1) for both AD and PDA samples. The high density of negative Qf in the bulk of the PDA Al2O3 film exerts a strong Coulomb repulsive force on the underlying CIGS minority carriers (ns), preventing them to recombine at the CIGS/Al2O3 interface. Using experimentally extracted Qf and Dit values, SCAPS simulation results showed that the surface concentration of minority carriers (ns) in the PDA films was approximately eight-orders of magnitude lower than in the AD films. The electrical characterization and estimations presented in this letter construct a comprehensive picture of the interfacial physics involved at the Al2O3/CIGS interface.

  15. Structural optical correlated properties of SnO2/Al2O3 core@ shell heterostructure

    NASA Astrophysics Data System (ADS)

    Heiba, Zein K.; Imam, N. G.; Bakr Mohamed, Mohamed

    2016-07-01

    Nano size polycrystalline samples of the core@shell heterostructure of SnO2 @ xAl2O3 (x = 0, 25, 50, 75 wt.%) were synthesized by sol-gel technique. The resulting samples were characterized with fourier transform infrared spectroscopy (FT-IR), photoluminescence (PL) and X-ray powder diffraction (XRD). The XRD patterns manifest diffraction peaks of SnO2 as main phase with weak peaks corresponding to Al2O3 phase. The formation of core@ shell structure is confirmed by TEM images and Rietveld quantitative phase analysis which revealed that small part of Al2O3 is incorporated into the SnO2 lattice while the main part (shell) remains as a separate phase segregated on the grain boundary surface of SnO2 (core). It is found that the grain size of the mixed oxides SnO2 @ xAl2O3 is below 10 nm while for pure SnO2 it is over 41 nm, indicating that alumina can effectively prevent SnO2 from further growing up in the process of calcination. This is confirmed by the large increase in the specific surface area for mixed oxide samples. The PL emission showed great dependence on the structure properties analyzed by XRD and FTIR. The PL results recommend Al2O3@SnO2 core@shell heterostructure to be a promising short-wavelength luminescent optoelectronic devices for blue, UV, and laser light-emitting diodes.

  16. Microstructure of Suspension Plasma Spray and Air Plasma Spray Al2O3-ZrO2 Composite Coatings

    NASA Astrophysics Data System (ADS)

    Chen, Dianying; Jordan, Eric H.; Gell, Maurice

    2009-09-01

    Al2O3-ZrO2 coatings were deposited by the suspension plasma spray (SPS) molecularly mixed amorphous powder and the conventional air plasma spray (APS) Al2O3-ZrO2 crystalline powder. The amorphous powder was produced by heat treatment of molecularly mixed chemical solution precursors below their crystallization temperatures. Phase composition and microstructure of the as-synthesized and heat-treated SPS and APS coatings were characterized by XRD and SEM. XRD analysis shows that the as-sprayed SPS coating is composed of α-Al2O3 and tetragonal ZrO2 phases, while the as-sprayed APS coating consists of tetragonal ZrO2, α-Al2O3, and γ-Al2O3 phases. Microstructure characterization revealed that the Al2O3 and ZrO2 phase distribution in SPS coatings is much more homogeneous than that of APS coatings.

  17. Influence of Content of Al2O3 on Structure and Properties of Nanocomposite Nb-B-Al-O films.

    PubMed

    Liu, Na; Dong, Lei; Dong, Lei; Yu, Jiangang; Pan, Yupeng; Wan, Rongxin; Gu, Hanqing; Li, Dejun

    2015-12-01

    Nb-B-Al-O nanocomposite films with different power of Al2O3 were successfully deposited on the Si substrate via multi-target magnetron co-sputtering method. The influences of Al2O3's content on structure and properties of obtained nanocomposite films through controlling Al2O3's power were investigated. Increasing the power of Al2O3 can influence the bombarding energy and cause the momentum transfer of NbB2. This can lead to the decreasing content of Al2O3. Furthermore, the whole films showed monocrystalline NbB2's (100) phase, and Al2O3 shaded from amorphous to weak cubic-crystalline when decreasing content of Al2O3. This structure and content changes were proof by X-ray diffraction (XRD) and high-resolution transmission electron microscopy (TEM) and X-ray photoelectron spectroscopy (XPS). When NbB2 grains were far from each other in lower power of Al2O3, the whole films showed a typical nanocomposite microstructure with crystalline NbB2 grains embedded in a matrix of an amorphous Al2O3 phase. Continuing increasing the power of Al2O3, the less content of Al2O3 tended to cause crystalline of cubic-Al2O3 between the close distances of different crystalline NbB2 grains. The appearance of cubic-crystallization Al2O3 can help to raise the nanocomposite films' mechanical properties to some extent. The maximum hardness and elastic modulus were up to 21.60 and 332.78 GPa, which were higher than the NbB2 and amorphous Al2O3 monolithic films. Furthermore, this structure change made the chemistry bond of O atom change from the existence of O-Nb, O-B, and O-Al bonds to single O-Al bond and increased the specific value of Al and O. It also influenced the hardness in higher temperature, which made the hardness variation of different Al2O3 content reduced. These results revealed that it can enhance the films' oxidation resistance properties and keep the mechanical properties at high temperature. The study highlighted the importance of controlling the Al2O3's content to prepare

  18. Effect of Nano-Al2O3 on the Toxicity and Oxidative Stress of Copper towards Scenedesmus obliquus

    PubMed Central

    Li, Xiaomin; Zhou, Suyang; Fan, Wenhong

    2016-01-01

    Nano-Al2O3 has been widely used in various industries; unfortunately, it can be released into the aquatic environment. Although nano-Al2O3 is believed to be of low toxicity, it can interact with other pollutants in water, such as heavy metals. However, the interactions between nano-Al2O3 and heavy metals as well as the effect of nano-Al2O3 on the toxicity of the metals have been rarely investigated. The current study investigated copper toxicity in the presence of nano-Al2O3 towards Scenedesmus obliquus. Superoxide dismutase activity and concentration of glutathione and malondialdehyde in cells were determined in order to quantify oxidative stress in this study. Results showed that the presence of nano-Al2O3 reduced the toxicity of Cu towards S. obliquus. The existence of nano-Al2O3 decreased the growth inhibition of S. obliquus. The accumulation of copper and the level of oxidative stress in algae were reduced in the presence of nano-Al2O3. Furthermore, lower copper accumulation was the main factor that mitigated copper toxicity with the addition of nano-Al2O3. The decreased copper uptake could be attributed to the adsorption of copper onto nanoparticles and the subsequent decrease of available copper in water. PMID:27294942

  19. Fermi-level unpinning in Pt/Al2O3/GaSb PMOS capacitors by sulphurization and rapid thermal annealing of GaSb surfaces

    NASA Astrophysics Data System (ADS)

    Kim, Seongkyung; Yoo, Sijung; Lim, Hajin; Kim, Joon-Rae; Jeong, Jae Kyeong; Kim, Hyeong Joon

    2016-08-01

    A facile route to mitigate the Fermi-level pinning between a p-type GaSb semiconductor and an Al2O3 dielectric is proposed. Combination of the sulphurization of the GaSb surface and the subsequent rapid thermal annealing allowed for high quality GaSb/Al2O3 interfacial characteristics; the interfacial trap density value was ≤2.0 × 1012 cm-2 eV-1 in an energy range of 0.05 ≤ ET - Ev ≤ 0.45 eV for the PMOS capacitor via rapid thermal annealing at 575 °C. A physical rationale was given on the basis of the thermo-chemical conversion of Ga2O into Ga2O3 and the conformal elimination of Sb related elements and oxides on the GaSb surface.

  20. Improved memory characteristics of charge trap memory by employing double layered ZrO2 nanocrystals and inserted Al2O3

    NASA Astrophysics Data System (ADS)

    Tang, Z. J.; Li, R.; Zhang, X. W.; Hu, D.; Zhao, Y. G.

    2016-07-01

    The charge trap memory capacitors incorporating a stacked charge trapping layer consisting of double layered ZrO2 nanocrystals (NCs) and inserted Al2O3 have been fabricated and investigated. It is observed that the memory capacitor with stacked trapping layer exhibits a hysteresis window as large as 14.3 V for ±10 V sweeping gate voltage range, faster program/erase speed, improved endurance performance, and good data retention characteristics with smaller extrapolated ten years charge loss at room temperature and 125 °C compared to single layered NCs. The special energy band alignment and the introduced additional traps of double layered ZrO2 NCs and inserted Al2O3 change the trapping and loss behavior of charges, and jointly contribute to the remarkable memory characteristics. Therefore, the memory capacitor with a stacked charge trapping layer is a promising candidate in future nonvolatile charge trap memory device design and application.

  1. Improvement in mechanical properties of plasma sprayed hydroxyapatite coatings by Al2O3 reinforcement.

    PubMed

    Mittal, Manoj; Nath, S K; Prakash, Satya

    2013-07-01

    Thermal sprayed hydroxyapatite coatings suffer from poor mechanical properties like tensile strength, wear resistance, hardness, toughness and fatigue. The mechanical properties of hydroxyapatite coatings can be enhanced via incorporation of secondary bioinert reinforcement material. In this study an attempt has been made to improve the mechanical properties of plasma sprayed hydroxyapatite by reinforcing it with 10, 20 and 30% Al2O3. The plasma sprayed coatings have been characterized using FE-SEM/EDAX, XRD, AFM and FTIR spectroscopy. Corrosion studies have been done in simulated body fluid and abrasive wear studies have been performed on flat specimens on a disk wear tester. Microhardness, tensile strength and wear resistance are found to be increased with increasing Al2O3 content. All types of coatings show superior resistance against corrosion in simulated body fluid.

  2. Oxygen defects in amorphous Al2O3: A hybrid functional study

    NASA Astrophysics Data System (ADS)

    Guo, Zhendong; Ambrosio, Francesco; Pasquarello, Alfredo

    2016-08-01

    The electronic properties of the oxygen vacancy and interstitial in amorphous Al2O3 are studied via ab initio molecular dynamics simulations and hybrid functional calculations. Our results indicate that these defects do not occur in amorphous Al2O3, due to structural rearrangements which assimilate the defect structure and cause a delocalization of the associated defect levels. The imbalance of oxygen leads to a nonstoichiometric compound in which the oxygen occurs in the form of O2- ions. Intrinsic oxygen defects are found to be unable to trap excess electrons. For low Fermi energies, the formation of peroxy linkages is found to be favored leading to the capture of holes. The relative +2/0 defect levels occur at 2.5 eV from the valence band.

  3. Effect of sulfur removal on Al2O3 scale adhesion

    NASA Technical Reports Server (NTRS)

    Smialek, James L.

    1991-01-01

    The effect of removing sulfur impurity on the adhesion of Al2O3 scale to NiCrAl was investigated in four experiments. It was found that removing sulfur to concentration less than 1 ppm per weight is sufficient to produce a very significant degree of alpha-Al2O3 scale adhesion to undoped NiCrAl alloys. Results of experiments show that repeated oxidation, and polishing after each oxidation cycle, of pure NiCrAl alloy lowered sulfur content from 10 to 2 ppm by weight (presumably by removing the segregated interfacial layer after each cycle); thinner samples became adherent after fewer oxidation-polishing cycles because of more limited supply of sulfur. It was found that spalling in subsequent cyclic oxidation tests was a direct function of the initial sulfur content. The transition between the adherent and nonadherent behavior was modeled in terms of sulfur flux, sulfur content, and sulfur segregation.

  4. Luminescence study of nanosized Al2O3:Tb3+ obtained by gas-dispersed synthesis

    NASA Astrophysics Data System (ADS)

    Berezovskaya, I. V.; Poletaev, N. I.; Khlebnikova, M. E.; Zatovsky, I. V.; Bychkov, K. L.; Efryushina, N. P.; Khomenko, O. V.; Dotsenko, V. P.

    2016-09-01

    Terbium-doped Al2O3 samples were obtained by gas-dispersed synthesis. It was shown that the resulting powders, with particle sizes of 10-70 nm, consist of a mixture of transition aluminas, among which the δ *-polymorph is dominant. The luminescence properties of Al2O3:Tb3+ have been studied upon excitation in the UV-visible range of the spectrum. It was found that Tb3+ ions cause several groups of inhomogeneously broadened emission bands in the range of 470-640 nm, which are characteristic for disordered materials. In addition, the emission spectra contain a broad band at about 450 nm and several narrower ones in the 680-720 nm region. These features are attributed to surface defects and impurity Cr3+ ions occupying Al3+ octahedral positions, respectively.

  5. Influence of hydrothermal modification on the properties of Ni/Al 2O 3 catalyst

    NASA Astrophysics Data System (ADS)

    Xiang, L.; Gong, Y. L.; Li, J. C.; Wang, Z. W.

    2004-12-01

    An advanced hydrothermal modification method was developed to synthesis Ni/Al 2O 3 catalyst with perfect activity. SEM, XRD, DTA-TG and XPS were used to characterize the textural properties of the materials obtained after each synthesis step. The experimental results indicated that the modification of the impregnation samples at elevated temperatures enhanced the absorption of Ni(NO 3) 2· xH 2O on the surface of supporters which were composed mainly of Al(OH) 3 and AlOOH, leading to the formation of the porous sintering products (NiAl 2O 4/Al 2O 3) with bigger specific surface areas and higher Ni contents. The conversion of CH 4 increased a lot by using the hydrothermal-modified catalyst instead of using the catalyst prepared via the traditional impregnation-sintering route.

  6. DRIFTS study of CO adsorption on praseodymium modified Pt/Al2O3

    NASA Astrophysics Data System (ADS)

    Tankov, I.; Cassinelli, W. H.; Bueno, J. M. C.; Arishtirova, K.; Damyanova, S.

    2012-10-01

    The effect of PrO2 content (1-20 wt.%) and temperature pretreatment on the structure and surface properties of PrO2-Al2O3-supported Pt catalysts was studied by XRD, XPS and DRIFTS of carbon monoxide adsorption. XRD analysis showed that platinum particle size decreases with the increase of PrO2 content for samples calcined at high temperature of 1023 K. The intensity and position of the infrared bands were strongly dependent on the praseodymium oxide content and reduction temperature. Two kinds of Pt sites (Pt0 and Ptδ+) were recorded in reduced PrO2-containing samples. A better thermal stability of the Ptsbnd CO bond in PrO2-containing samples compared to Pt/Al2O3 was observed.

  7. PTOSL response of commercial Al2O3:C detectors to ultraviolet radiation.

    PubMed

    Gronchi, Claudia C; Caldas, Linda V E

    2013-04-01

    The photo-transferred optically stimulated luminescence (PTOSL) technique using Al2O3:C detectors has been suggested as a good option for ultraviolet (UV) radiation dosimetry. The objective of this work was to study the PTOSL response of Al2O3:C InLight detectors and the OSL microStar reader of Landauer. The parameters such as radiation pre-dose, optical treatment time and UV illumination time were determined. The detectors presented a satisfactory stimulus of PTOSL signals when they were subjected to a preconditioning procedure with gamma radiation (1 Gy pre-dose), 30 min of optical treatment (to empty the shallow traps) and 30 min of UV illumination from an artificial source. PMID:22887115

  8. Tribological properties of Ag/Ti films on Al2O3 ceramic substrates

    NASA Technical Reports Server (NTRS)

    Dellacorte, Christopher; Pepper, Stephen V.; Honecy, Frank S.

    1991-01-01

    Ag solid lubricant films, with a thin Ti interlayer for enhanced adhesion, were sputter deposited on Al2O3 substrate disks to reduce friction and wear. The dual Ag/Ti films were tested at room temperature in a pin-on-disk tribometer sliding against bare, uncoated Al2O3 pins under a 4.9 N load at a sliding velocity of 1 m/s. The Ag/Ti films reduced the friction coefficient by 50 percent to about 0.41 compared to unlubricated baseline specimens. Pin wear was reduced by a factor of 140 and disk wear was reduced by a factor of 2.5 compared to the baseline. These films retain their good tribological properties including adhesion after heat treatments at 850 C and thus may be able to lubricate over a wide temperature range. This lubrication technique is applicable to space lubrication, advanced heat engines, and advanced transportation systems.

  9. Luminescence study of nanosized Al2O3:Tb3+ obtained by gas-dispersed synthesis

    NASA Astrophysics Data System (ADS)

    Berezovskaya, I. V.; Poletaev, N. I.; Khlebnikova, M. E.; Zatovsky, I. V.; Bychkov, K. L.; Efryushina, N. P.; Khomenko, O. V.; Dotsenko, V. P.

    2016-09-01

    Terbium-doped Al2O3 samples were obtained by gas-dispersed synthesis. It was shown that the resulting powders, with particle sizes of 10–70 nm, consist of a mixture of transition aluminas, among which the δ *-polymorph is dominant. The luminescence properties of Al2O3:Tb3+ have been studied upon excitation in the UV–visible range of the spectrum. It was found that Tb3+ ions cause several groups of inhomogeneously broadened emission bands in the range of 470–640 nm, which are characteristic for disordered materials. In addition, the emission spectra contain a broad band at about 450 nm and several narrower ones in the 680–720 nm region. These features are attributed to surface defects and impurity Cr3+ ions occupying Al3+ octahedral positions, respectively.

  10. [Laser Raman spectra study on Co-Mo/Al2O3 hydrodesulphurization catalysts].

    PubMed

    Yuan, Hui; Xu, Guang-Tong; Qiherima; Li, Hui-Feng; Lu, Li-Jun; Yang, Xing-Yuan; Tana

    2014-02-01

    Due to the implementation of more stringent specifications in sulfur content for gasoline , a deep understanding of the active phase of Co-Mo/Al2O3 catalysts is necessary to the development of hydrodesulphurization (HDS) catalysts. A series of Co-Mo/Al2O3 HDS catalysts with different metal loading were studied by laser Raman spectra. The existence form and the content of the active component of the catalyst were obtained by Raman spectra. The result shows that the percentage of characteristic Raman bands 940 cm(-1) correlates linearly with the HDS selectivity, which can be used as an experimental evidence for developing industrial selective HDS catalysts. Raman spectra of sulfided catalysts show that the bands of oxidic catalysts at 839 and 940 cm(-1) disappeared, and simultaneously, the bands of Mo-S at 372 and 408 cm(-1) emerged, which indicate that the oxidic sample is sulfided completely. PMID:24822416

  11. Geant4 calculations for space radiation shielding material Al2O3

    NASA Astrophysics Data System (ADS)

    Capali, Veli; Acar Yesil, Tolga; Kaya, Gokhan; Kaplan, Abdullah; Yavuz, Mustafa; Tilki, Tahir

    2015-07-01

    Aluminium Oxide, Al2O3 is the most widely used material in the engineering applications. It is significant aluminium metal, because of its hardness and as a refractory material owing to its high melting point. This material has several engineering applications in diverse fields such as, ballistic armour systems, wear components, electrical and electronic substrates, automotive parts, components for electric industry and aero-engine. As well, it is used as a dosimeter for radiation protection and therapy applications for its optically stimulated luminescence properties. In this study, stopping powers and penetrating distances have been calculated for the alpha, proton, electron and gamma particles in space radiation shielding material Al2O3 for incident energies 1 keV - 1 GeV using GEANT4 calculation code.

  12. X-ray imaging using the thermoluminescent properties of commercial Al2O3 ceramic plates.

    PubMed

    Shinsho, Kiyomitsu; Kawaji, Yasuyuki; Yanagisawa, Shin; Otsubo, Keisuke; Koba, Yusuke; Wakabayashi, Genichiro; Matsumoto, Kazuki; Ushiba, Hiroaki

    2016-05-01

    This research demonstrated that commercially available alumina is well-suited for use in large area X-ray detectors. We discovered a new radiation imaging device that has a high spatial resolution, high sensitivity, wide dynamic range, large imaging area, repeatable results, and low operating costs. The high thermoluminescent (TL) properties of Al2O3 ceramic plates make them useful for X-ray imaging devices. PMID:26972627

  13. Solid state reduction of chromium (VI) pollution for Al2O3-Cr metal ceramics application

    NASA Astrophysics Data System (ADS)

    Zhu, Hekai; Fang, Minghao; Huang, Zhaohui; Liu, Yangai; Tang, Hao; Min, Xin; Wu, Xiaowen

    2016-04-01

    Reduction of chromium (VI) from Na2CrO4 through aluminothermic reaction and fabrication of metal-ceramic materials from the reduction products have been investigated in this study. Na2CrO4 could be successfully reduced into micrometer-sized Cr particles in a flowing Ar atmosphere in presence of Al powder. The conversion ratio of Na2CrO4 to metallic Cr attained 96.16% efficiency. Al2O3-Cr metal-ceramic with different Cr content (5 wt%, 10 wt%, 15 wt%, 20 wt%) were further prepared from the reduction product Al2O3-Cr composite powder, and aluminum oxide nanopowder via pressure-less sintering. The phase composition, microstructure and mechanical properties of metal-ceramic composites were characterized to ensure the potential of the Al2O3-Cr composite powder to form ceramic materials. The highest relative density and bending strength can reach 93.4% and 205 MP, respectively. The results indicated that aluminothermic reduction of chromium (VI) for metal-ceramics application is a potential approach to remove chromium (VI) pollutant from the environment.

  14. Different behavior of lithium interaction with SiO2 and Al2 O3

    NASA Astrophysics Data System (ADS)

    Zhao, Yufeng; Ban, Chunmei; Kappes, Branden B.; Xu, Qiang; Engtrakul, Chaiwat; Ciobanu, Cristian V.; Dillon, Anne C.

    2014-03-01

    Lithiation of SiO2 and lithium intercalation in Al2O3 is studied both theoretically and experimentally. Lithium interacts with these two types of oxides in distinctly different behaviors. Reversible insertion/extraction of lithium in SiO2 up to a Li density of 2/3 Li per Si are demonstrated experimentally. Density-functional-theory (DFT) calculation shows that neither free interstitial Li atoms (no reduction) nor formation of a local Li2O cluster plus a Si-Si bond (full reduction) is energetically favorable. However, two Li atoms can effectively break a Si-O bond and be stabilized between the Si and O atoms. Such a defect, representing a state of partial reduction of SiO2, is energetically favorable. DFT simulation shows that intercalation of SiO2 at high Li density through partial reduction results in crystalline compounds LixSiO2 (x <2/3) with tunable band-gaps in the range of 2-3.4 eV. In sharp contrast, Al2O3 is very stable against lithiation through any form of reduction. However, good conductivity of Li ions is shown in porous Al2O3. Work funded by the U.S. DOE under Subcontract No. DE-AC36-08GO28308 through the Office of EERE, the Office of the Vehicle Technologies Program, and by NSF through Award Nos. OCI-1048586 and CMMI-0846858.

  15. Spectroscopy and optically stimulated luminescence of Al2O3:C using time-resolved measurements

    NASA Astrophysics Data System (ADS)

    Yukihara, E. G.; McKeever, S. W. S.

    2006-10-01

    This paper reports the observation of ultraviolet (UV) emission at 335nm in the optically stimulated luminescence (OSL) of carbon-doped aluminum oxide (Al2O3:C) and presents results on the investigation of the OSL properties of this band, including its dose response, time dependence after irradiation, and dependence of the OSL signal on the type of radiation. Time-resolved OSL measurements were used to separate the UV emission band from the dominant OSL emission band of Al2O3:C, namely, the F-center luminescence at 420nm. A comparison of the OSL properties of the UV and F-center emission bands is important for various dosimetric applications because the relative contribution of the UV and F-center emissions to the OSL signal varies with readout technique and optical filters used in the readout equipment. The UV emission band is found to show an ionization density dependence that is different from the dependence observed for the F-center emission, and an increase in intensity with time elapsed after beta irradiation. These results are relevant for OSL dosimetry of radiation fields containing heavy charged particles, such as the space radiation field and the secondary fields created by interactions of matter with energetic neutrons, as well as for understanding of the basic OSL mechanism in Al2O3:C.

  16. A short-time fading study of Al2O3:C

    NASA Astrophysics Data System (ADS)

    Nascimento, L. F.; Vanhavere, F.; Silva, E. H.; Deene, Y. De

    2015-01-01

    This paper studies the short-time fading from Al2O3:C by measuring optically stimulated luminescence (OSL) signals (Total OSL: TOSL, and Peak OSL: POSL) from droplets and Luxel™ pellets. The influence of various bleaching regimes (blue, green and white) and light power is compared. The fading effect is the decay of the OSL signal in the dark at room temperature. Al2O3:C detectors were submitted to various bleaching regimes, irradiated with a reference dose and read out after different time spans. Investigations were carried out using 2 mm size droplet detectors, made of thin Al2O3:C powder mixed with a photocured polymer. Tests were compared to Luxel™-type detectors (Landauer Inc.). Short-time post-irradiation fading is present in OSL results (TOSL and POSL) droplets for time spans up to 200 s. The effect of short-time fading can be lowered/removed when treating the detectors with high-power and/or long time bleaching regimes; this result was observed in both TOSL and POSL from droplets and Luxel™.

  17. Thermoluminescence glow curves and optical stimulated luminescence of undoped alpha-Al2O3 crystals.

    PubMed

    Zhang, C X; Tang, Q; Lin, L B; Luo, D L

    2006-01-01

    The characteristics of thermoluminescence (TL) and optical stimulated luminescence (OSL) in undoped alpha-Al2O3 single crystals were studied. The TL glow curves of the crystal samples irradiated at various dose levels were measured by RisØ TL/OSL-DA-15B/C reader with U-340 or 7-59 filters at different heating rates. The glow peaks measured with U-340 at approximately 210 degrees C of the undoped alpha-Al2O3 can be well fitted by first-order kinetic equation whereas the glow peaks measured with 7-59 filters are a composite of two first-order glow peaks. It indicates that the TL glow curves are dependent upon the filter used in the reader that is related to the emission spectra of luminescence materials. The OSL were also measured and fitted by two exponential functions to get the luminescence intensities. The TL and OSL dose responses of the undoped alpha-Al2O3 crystal were obtained in the dose range of 0.12-248 Gy and fitted by the composite action dose-response function to get nonlinear characteristic parameters. The TL and OSL dose responses are linear-sublinear. PMID:16644982

  18. Insight into the effects of different ageing protocols on Rh/Al2O3 catalyst

    NASA Astrophysics Data System (ADS)

    Zhao, Baohuai; Ran, Rui; Cao, Yidan; Wu, Xiaodong; Weng, Duan; Fan, Jun; Wu, Xueyuan

    2014-07-01

    In this work, a catalyst of Rh loaded on Al2O3 was prepared by impregnating method with rhodium nitrate aqueous solution as the Rh precursor. The catalyst was aged under different protocols (lean, rich, inert and cyclic) to obtain several aged samples. All the Rh/Al2O3 samples were characterized by X-ray diffraction (XRD), Brunauer-Emmett-Teller (BET) method, CO-chemisorption, H2-temperature programmed reduction (H2-TPR), transmission electron microscope (TEM) and X-ray photoelectron spectroscopy (XPS). It was found that a specific ageing treatment could strongly affect the catalytic activity. The N2 aged and the H2 aged samples had a better catalytic activity for CO + NO reaction than the fresh sample while the air aged and the cyclic aged samples exhibited much worse activity. More surface Rh content and better reducibility were obtained in the N2 and the H2 aged samples and the Rh particles existed with an appropriate size, which were all favorable to the catalytic reaction. However, the air and the cyclic ageing protocols induced a strong interaction between Rh species and the Al2O3 support, which resulted in a severe sintering of particles of Rh species and the loss of active sites. The structure evolution scheme of the catalysts aged in different protocols was also established in this paper.

  19. Effect of adsorbed films on friction of Al2O3-metal systems

    NASA Technical Reports Server (NTRS)

    Pepper, S. V.

    1976-01-01

    The kinetic friction of polycrystalline Al2O3 sliding on Cu, Ni, and Fe in ultrahigh vacuum was studied as a function of the surface chemistry of the metal. Clean metal surfaces were exposed to O2, Cl2, C2H4, and C2H3Cl, and the change in friction due to the adsorbed species was observed. Auger electron spectroscopy assessed the elemental composition of the metal surface. It was found that the systems exposed to Cl2 exhibited low friction, interpreted as the van der Waals force between the Al2O3 and metal chloride. The generation of metal oxide by oxygen exposures resulted in an increase in friction, interpreted as due to strong interfacial bonds established by reaction of metal oxide with Al2O3 to form the complex oxide (spinel). The only effect of C2H4 was to increase the friction of the Fe system, but C2H3Cl exposures decreases friction in both Ni and Fe systems, indicating the dominance of the chlorine over the ethylene complex on the surface

  20. Room Temperature Radiolytic Synthesized Cu@CuAlO2-Al2O3 Nanoparticles

    PubMed Central

    Abedini, Alam; Saion, Elias; Larki, Farhad; Zakaria, Azmi; Noroozi, Monir; Soltani, Nayereh

    2012-01-01

    Colloidal Cu@CuAlO2-Al2O3 bimetallic nanoparticles were prepared by a gamma irradiation method in an aqueous system in the presence of polyvinyl pyrrolidone (PVP) and isopropanol respectively as a colloidal stabilizer and scavenger of hydrogen and hydroxyl radicals. The gamma irradiation was carried out in a 60Co gamma source chamber with different doses up to 120 kGy. The formation of Cu@CuAlO2-Al2O3 nanoparticles was observed initially by the change in color of the colloidal samples from colorless to brown. Fourier transform infrared spectroscopy (FTIR) confirmed the presence of bonds between polymer chains and the metal surface at all radiation doses. Results of transmission electron microscopy (TEM), energy dispersive X-ray spectrometry (EDX), and X-ray diffraction (XRD) showed that Cu@CuAlO2-Al2O3 nanoparticles are in a core-shell structure. By controlling the absorbed dose and precursor concentration, nanoclusters with different particle sizes were obtained. The average particle diameter increased with increased precursor concentration and decreased with increased dose. This is due to the competition between nucleation, growth, and aggregation processes in the formation of nanoclusters during irradiation. PMID:23109893

  1. Room temperature radiolytic synthesized Cu@CuAlO(2)-Al(2)O(3) nanoparticles.

    PubMed

    Abedini, Alam; Saion, Elias; Larki, Farhad; Zakaria, Azmi; Noroozi, Monir; Soltani, Nayereh

    2012-01-01

    Colloidal Cu@CuAlO(2)-Al(2)O(3) bimetallic nanoparticles were prepared by a gamma irradiation method in an aqueous system in the presence of polyvinyl pyrrolidone (PVP) and isopropanol respectively as a colloidal stabilizer and scavenger of hydrogen and hydroxyl radicals. The gamma irradiation was carried out in a (60)Co gamma source chamber with different doses up to 120 kGy. The formation of Cu@CuAlO(2)-Al(2)O(3) nanoparticles was observed initially by the change in color of the colloidal samples from colorless to brown. Fourier transform infrared spectroscopy (FTIR) confirmed the presence of bonds between polymer chains and the metal surface at all radiation doses. Results of transmission electron microscopy (TEM), energy dispersive X-ray spectrometry (EDX), and X-ray diffraction (XRD) showed that Cu@CuAlO(2)-Al(2)O(3) nanoparticles are in a core-shell structure. By controlling the absorbed dose and precursor concentration, nanoclusters with different particle sizes were obtained. The average particle diameter increased with increased precursor concentration and decreased with increased dose. This is due to the competition between nucleation, growth, and aggregation processes in the formation of nanoclusters during irradiation. PMID:23109893

  2. Removal of alachlor from water by catalyzed ozonation on Cu/Al2O3 honeycomb

    PubMed Central

    2013-01-01

    Background The herbicide alachlor (2-chloro-2′6′-diethyl-N-methoxymethylacetanilide) has been known as a probable human carcinogen, and the MCL (minimum contamination level) for drinking water has been set at 2 μg L-1. Therefore, the advanced methods for effectively removing it from water are a matter of interest. Catalyzed ozonation is a promising method for refractory organics degradation. Cu/Al2O3 catalyzed ozonation for degrading an endocrine disruptor (alachlor) in water was investigated. Results Experimental results showed that the ozonation of alachlor can be effectively catalyzed and enhanced by Cu/Al2O3-honeycomb. The main intermediate products formed (aliphatic carboxylic acids) were mineralized to a large extent in the catalytic process. Conclusions This study has shown that Cu/Al2O3-honeycomb is a feasible and efficient catalyst in the ozonation of alachlor in water. Less intermediate oxidation product was produced in the catalytic process than in the uncatalytic one. Furthermore, the mineralization of alachlor could be enhanced by increasing the pH of the reaction solution. PMID:23977841

  3. Atomic layer deposition of Al2O3 thin films using dimethylaluminum isopropoxide and water

    NASA Astrophysics Data System (ADS)

    Cho, Wontae; Sung, Kiwhan; An, Ki-Seok; Sook Lee, Sun; Chung, Taek-Mo; Kim, Yunsoo

    2003-07-01

    Dimethylaluminum isopropoxide (DMAI), (CH3)2AlOCH(CH3)2, a precursor originally developed for the metalorganic chemical vapor deposition of alumina, was adopted as a new precursor for growing aluminum oxide thin films on HF-treated Si(001) substrates by atomic layer deposition (ALD). This precursor is stable for a prolonged period of storage time under inert atmosphere (such as in nitrogen or argon) and does not react vigorously in air, and therefore is easy to handle and safe, without causing hazards. The self-limiting ALD process by alternate surface reactions of DMAI and H2O was confirmed by thicknesses of the grown aluminum oxide films measured as functions of the DMAI pulse time and the number of DMAI-H2O cycles. A maximum growth rate of ~1.06 Å/cycle was achieved in the substrate temperature range ~120-150 °C. Growth of stoichiometric Al2O3 thin films without appreciable carbon incorporation was verified by Rutherford backscattering spectrometry. Atomic force microscopy images showed atomically flat and uniform surfaces. In particular, a cross-sectional high-resolution transmission electron microscopy image of an Al2O3 film shows that there is no distinguishable interfacial oxide layer between the Al2O3 film and the Si substrate. These results prove the validity of DMAI as a new ALD source for aluminum oxide.

  4. The electrical conductivity of Al2O3 under shock-compression

    PubMed Central

    Liu, Hanyu; Tse, John S.; Nellis, W. J.

    2015-01-01

    Sapphire (Al2O3) crystals are used below 100 GPa as anvils and windows in dynamic-compression experiments because of their transparency and high density. Above 100 GPa shock pressures, sapphire becomes opaque and electrically conducting because of shock-induced defects. Such effects prevent temperature and dc conductivity measurements of materials compressed quasi-isentropically. Opacities and electrical conductivities at ~100 GPa are non-equilibrium, rather than thermodynamic parameters. We have performed electronic structure calculations as a guide in predicting and interpreting shock experiments and possibly to discover a window up to ~200 GPa. Our calculations indicate shocked sapphire does not metallize by band overlap at ~300 GPa, as suggested previously by measured non-equilibrium data. Shock-compressed Al2O3 melts to a metallic liquid at ~500 GPa and 10,000 K and its conductivity increases rapidly to ~2000 Ω−1cm−1 at ~900 GPa. At these high shock temperatures and pressures sapphire is in thermal equilibrium. Calculated conductivity of Al2O3 is similar to those measured for metallic fluid H, N, O, Rb, and Cs. Despite different materials, pressures and temperatures, and compression techniques, both experimental and theoretical, conductivities of all these poor metals reach a common end state typical of strong-scattering disordered materials. PMID:26239369

  5. Atomic-layer-deposited Al2O3 and HfO2 on InAlAs: A comparative study of interfacial and electrical characteristics

    NASA Astrophysics Data System (ADS)

    Wu, Li-Fan; Zhang, Yu-Ming; Lv, Hong-Liang; Zhang, Yi-Men

    2016-10-01

    Al2O3 and HfO2 thin films are separately deposited on n-type InAlAs epitaxial layers by using atomic layer deposition (ALD). The interfacial properties are revealed by angle-resolved x-ray photoelectron spectroscopy (AR-XPS). It is demonstrated that the Al2O3 layer can reduce interfacial oxidation and trap charge formation. The gate leakage current densities are 1.37 × 10-6 A/cm2 and 3.22 × 10-6 A/cm2 at +1 V for the Al2O3/InAlAs and HfO2/InAlAs MOS capacitors respectively. Compared with the HfO2/InAlAs metal-oxide-semiconductor (MOS) capacitor, the Al2O3/InAlAs MOS capacitor exhibits good electrical properties in reducing gate leakage current, narrowing down the hysteresis loop, shrinking stretch-out of the C-V characteristics, and significantly reducing the oxide trapped charge (Q ot) value and the interface state density (D it). Project supported by the National Basic Research Program of China (Grant No. 2010CB327505), the Advanced Research Foundation of China (Grant No. 914xxx803-051xxx111), the National Defense Advance Research Project, China (Grant No. 513xxxxx306), the National Natural Science Foundation of China (Grant No. 51302215), the Scientific Research Program Funded by Shaanxi Provincial Education Department, China (Grant No. 14JK1656), and the Science and Technology Project of Shaanxi Province, China (Grant No. 2016KRM029).

  6. A nanoplate-like α-Al2O3 out-layered Al2O3-ZrO2 coating fabricated by micro-arc oxidation for hip joint prosthesis

    NASA Astrophysics Data System (ADS)

    Zhang, Lan; Zhang, Wenting; Han, Yong; Tang, Wu

    2016-01-01

    A nanoplate-like α-Al2O3 out-layered Al2O3-ZrO2 coating was fabricated on Zr substrate by micro-arc oxidation (MAO). The structure, formation mechanism, anti-wear property and aging behavior of the coating were explored. The obtained results show that the coating is composed of Al2O3 and ZrO2; the amount and crystallinity of Al2O3 increase gradually from inner layer to the coating surface; monoclinic ZrO2 (m-ZrO2) and tetragonal ZrO2 (t-ZrO2) are both present in the coating, and the ratio of t-ZrO2/m-ZrO2 increases with closing to the coating surface by a "constraint" mechanism of Al2O3; the coating surface mainly consists of nanoplate-like α-Al2O3, and a small amount of nanocrystallized m- and t-ZrO2. The superimposition of α-Al2O3 growth unit on {0 0 0 1} face should be prohibited by PO43- during the MAO process, resulting in the formation of nanoplate-like α-Al2O3 on the coating surface. Compared with pure Zr, the coating shows noticeable improvement in wear-resistance. For aging behavior, although more t-ZrO2 in the coating is transformed to m-ZrO2 with increasing aging time, wear loss increases slightly. It indicates that the nanoplate-like α-Al2O3 out-layered Al2O3-ZrO2 is a potential coating for articular head replacement.

  7. Cu/Ba/bauxite: an Inexpensive and Efficient Alternative for Pt/Ba/Al2O3 in NOx Removal

    PubMed Central

    Wang, Xiuyun; Chen, Zhilin; Luo, Yongjin; Jiang, Lilong; Wang, Ruihu

    2013-01-01

    Cu/Ba/bauxite possesses superior NOx storage and reduction (NSR) performances, high thermal stability, strong resistance against SO2 poisoning and outstanding regeneration ability in comparison with Pt/Ba/Al2O3. It can serve as a cheap and promising alternative for traditional Pt/Ba/Al2O3 in NOx removal from lean-burn engines. PMID:23536149

  8. Characterization of Al2O3 in High-Strength Mo Alloy Sheets by High-Resolution Transmission Electron Microscopy.

    PubMed

    Zhou, Yucheng; Gao, Yimin; Wei, Shizhong; Hu, Yajie

    2016-02-01

    A novel type of alumina (Al2O3)-doped molybdenum (Mo) alloy sheet was prepared by a hydrothermal method and a subsequent powder metallurgy process. Then the characterization of α-Al2O3 was investigated using high-resolution transmission electron microscopy as the research focus. The tensile strength of the Al2O3-doped Mo sheet is 43-85% higher than that of the pure Mo sheet, a very obvious reinforcement effect. The sub-micron and nanometer-scale Al2O3 particles can increase the recrystallization temperature by hindering grain boundary migration and improve the tensile strength by effectively blocking the motion of the dislocations. The Al2O3 particles have a good bond with the Mo matrix and there exists an amorphous transition layer at the interface between Al2O3 particles and the Mo matrix in the as-rolled sheet. The sub-structure of α-Al2O3 is characterized by a number of nanograins in the $\\left[ {2\\bar{2}1} \\right]$ direction. Lastly, a new computer-based method for indexing diffraction patterns of the hexagonal system is introduced, with 16 types of diffraction patterns of α-Al2O3 indexed. PMID:26914997

  9. Recombinant Phage Coated 1D Al2O3 Nanostructures for Controlling the Adhesion and Proliferation of Endothelial Cells

    PubMed Central

    Lee, Juseok; Jeon, Hojeong; Haidar, Ayman; Abdul-Khaliq, Hashim; Veith, Michael; Kim, Youngjun

    2015-01-01

    A novel synthesis of a nanostructured cell adhesive surface is investigated for future stent developments. One-dimensional (1D) Al2O3 nanostructures were prepared by chemical vapor deposition of a single source precursor. Afterwards, recombinant filamentous bacteriophages which display a short binding motif with a cell adhesive peptide (RGD) on p3 and p8 proteins were immobilized on these 1D Al2O3 nanostructures by a simple dip-coating process to study the cellular response of human endothelial EA hy.926. While the cell density decreased on as-deposited 1D Al2O3 nanostructures, we observed enhanced cell proliferation and cell-cell interaction on recombinant phage overcoated 1D Al2O3 nanostructures. The recombinant phage overcoating also supports an isotropic cell spreading rather than elongated cell morphology as we observed on as-deposited Al2O3 1D nanostructures. PMID:26090458

  10. Behavior of Al2O3 and SiO2 with heating in a Cl2 + CO stream

    NASA Technical Reports Server (NTRS)

    Shchetinin, L. K.

    1984-01-01

    Differential thermal analysis (DTA) and Thermogravimetric analysis (TGA) were used to study the chlorination of alpha-Al2O3, gamma-Al2O3 and amorphous SiO2 in a Cl + CO stream, for the preparation of AlCl3 and SiCl4. The chlorination starting temperatures were 235 deg for Al2O3 and 680 deg for SiO2. The chlorination of alpha- and gamma-Al2O3 takes place via the formation of AlOCl as an intermediate product, and its subsequent dissociation at 480 to 560 deg, according to 3AlOCl yields AlCl3 + Al2O3. The chlorination activation energies are given for the three oxides.

  11. NMR Spectroscopy of the Hydrated Layer of Composite Particles Based on Nanosized Al2O3 and Vitreous Humor

    NASA Astrophysics Data System (ADS)

    Turov, V. V.; Gerashchenko, I. I.; Markina, A. I.

    2013-11-01

    The hydrated layer of composite particles prepared using Al2O3 and cattle vitreous humor was investigated using NMR spectroscopy. It was found that water bound to Al2O3 nanoparticles was present in the form of clusters with different degrees of association and energies of interaction with the surface. Water bound to the surface of the Al2O3/vitreous humor composite became more uniform upon immobilization of vitreous humor components on the surface of the Al2O3. With this, the clusters of adsorbed water had characteristics that were close to those found in air and weakly polar CHCl3 media. Addition of polar CH3CN led to the formation of very small water clusters. PMR spectra of the surface of the Al2O3/vitreous humor composite in the presence of trifluoroacetic acid differentiated four types of hydrated structures that differed in the degree of water association.

  12. Research on microcracks avoidance in processing of α-Al2O3 by ultrashort laser pulses

    NASA Astrophysics Data System (ADS)

    Wang, Cheng-Wei; Zhao, Quan-Zhong

    2013-07-01

    The optical crystal α-Al2O3 has been widely used as the matrix of ruby and blue sapphire for its wide transparency, high thermal conductivity, big scale and low cost. α-Al2O3 is so hard that cutter is easily abraded. Micromachining of α-Al2O3 by ultrashort pulsed laser is superior to the traditional mechanical approach as its non-contact and cold machining features. However, unexpected cracks on the surface of α-Al2O3 are observed after femtosecond laser machining. In order to hinder the crack source from stretching, we optimize the laser parameters accompanied with annealing. The crack-free machining can be achieved. Three-dimensional α-Al2O3 microstructures free from fracture, such as cylinder, barrel and sphere are demonstrated.

  13. Effect of Microstructure on the Thermal Conductivity of Plasma-Sprayed Al2O3-YSZ Coatings

    NASA Astrophysics Data System (ADS)

    Song, Xuemei; Liu, Ziwei; Kong, Mingguang; Wang, Yongzhe; Huang, Liping; Zheng, Xuebin; Zeng, Yi

    2016-04-01

    The microstructures of three atmospheric plasma-sprayed (APS) Al2O3-ZrO2 coatings were investigated using x-ray diffraction, scanning electron microscopy, and transmission electron microscopy. The differences in the microstructures of the three Al2O3-ZrO2 coatings, including their phase compositions, cracks, pores, grain sizes, and solid solutions, were analyzed in detail. A close relationship was observed between the thermal conductivities of the coatings and the microstructures, and the Al2O3-YSZ coatings with more spherical pores, fewer vertical cracks, and finer grains exhibited the lowest thermal conductivity of 0.91 W/m·K. Compared with YSZ coatings, Al2O3-YSZ coatings can exhibit lower thermal conductivity, which may be attributed to the formation of an amorphous phase, smaller grains, and Al2O3-YSZ solid solution.

  14. Thickness-, Composition-, and Magnetic-Field-Dependent Complex Impedance Spectroscopy of Granular-Type-Barrier Co/Co-Al2O3/Co MTJs

    NASA Astrophysics Data System (ADS)

    Tuan, Nguyen Anh; Anh, Nguyen Tuan; Nga, Nguyen Tuyet; Tue, Nguyen Anh; Van Cuong, Giap

    2016-06-01

    The alternating-current (ac) electrical properties of granular-type-barrier magnetic tunnel junctions (GBMTJs) based on Co/Co x (Al2O3)1- x ( t)/Co trilayer structures have been studied using complex impedance spectroscopy (CIS). Their CIS characteristics were investigated in external magnetic fields varying from 0 kOe to 3 kOe as a function of Co composition x at 10 at.%, 25 at.%, and 35 at.%, with barrier layer thickness t of 20 nm to 90 nm. The influence of these factors on the behaviors of the ac impedance response of the GBMTJs was deeply investigated and attributed to the dielectric or conducting nature of the Co-Al2O3 barrier layer. The most remarkable typical phenomena observed in these behaviors, even appearing paradoxical, include lower impedance for thicker t for each given x, a declining trend of Z with increasing x, a clear decrease of Z with H, and especially a partition of Z into zones according to the H value. All these effects are analyzed and discussed to demonstrate that diffusion-type and mass-transfer-type phenomena can be inferred from processes such as spin tunneling and Coulomb or spin blockade in the Co-Al2O3 barrier layer.

  15. A mixed solution-processed gate dielectric for zinc-tin oxide thin-film transistor and its MIS capacitance

    PubMed Central

    Kim, Hunho; Kwack, Young-Jin; Yun, Eui-Jung; Choi, Woon-Seop

    2016-01-01

    Solution-processed gate dielectrics were fabricated with the combined ZrO2 and Al2O3 (ZAO) in the form of mixed and stacked types for oxide thin film transistors (TFTs). ZAO thin films prepared with double coatings for solid gate dielectrics were characterized by analytical tools. For the first time, the capacitance of the oxide semiconductor was extracted from the capacitance-voltage properties of the zinc-tin oxide (ZTO) TFTs with the combined ZAO dielectrics by using the proposed metal-insulator-semiconductor (MIS) structure model. The capacitance evolution of the semiconductor from the TFT model structure described well the threshold voltage shift observed in the ZTO TFT with the ZAO (1:2) gate dielectric. The electrical properties of the ZTO TFT with a ZAO (1:2) gate dielectric showed low voltage driving with a field effect mobility of 37.01 cm2/Vs, a threshold voltage of 2.00 V, an on-to-off current ratio of 1.46 × 105, and a subthreshold slope of 0.10 V/dec. PMID:27641430

  16. A mixed solution-processed gate dielectric for zinc-tin oxide thin-film transistor and its MIS capacitance.

    PubMed

    Kim, Hunho; Kwack, Young-Jin; Yun, Eui-Jung; Choi, Woon-Seop

    2016-01-01

    Solution-processed gate dielectrics were fabricated with the combined ZrO2 and Al2O3 (ZAO) in the form of mixed and stacked types for oxide thin film transistors (TFTs). ZAO thin films prepared with double coatings for solid gate dielectrics were characterized by analytical tools. For the first time, the capacitance of the oxide semiconductor was extracted from the capacitance-voltage properties of the zinc-tin oxide (ZTO) TFTs with the combined ZAO dielectrics by using the proposed metal-insulator-semiconductor (MIS) structure model. The capacitance evolution of the semiconductor from the TFT model structure described well the threshold voltage shift observed in the ZTO TFT with the ZAO (1:2) gate dielectric. The electrical properties of the ZTO TFT with a ZAO (1:2) gate dielectric showed low voltage driving with a field effect mobility of 37.01 cm(2)/Vs, a threshold voltage of 2.00 V, an on-to-off current ratio of 1.46 × 10(5), and a subthreshold slope of 0.10 V/dec. PMID:27641430

  17. A mixed solution-processed gate dielectric for zinc-tin oxide thin-film transistor and its MIS capacitance

    NASA Astrophysics Data System (ADS)

    Kim, Hunho; Kwack, Young-Jin; Yun, Eui-Jung; Choi, Woon-Seop

    2016-09-01

    Solution-processed gate dielectrics were fabricated with the combined ZrO2 and Al2O3 (ZAO) in the form of mixed and stacked types for oxide thin film transistors (TFTs). ZAO thin films prepared with double coatings for solid gate dielectrics were characterized by analytical tools. For the first time, the capacitance of the oxide semiconductor was extracted from the capacitance-voltage properties of the zinc-tin oxide (ZTO) TFTs with the combined ZAO dielectrics by using the proposed metal-insulator-semiconductor (MIS) structure model. The capacitance evolution of the semiconductor from the TFT model structure described well the threshold voltage shift observed in the ZTO TFT with the ZAO (1:2) gate dielectric. The electrical properties of the ZTO TFT with a ZAO (1:2) gate dielectric showed low voltage driving with a field effect mobility of 37.01 cm2/Vs, a threshold voltage of 2.00 V, an on-to-off current ratio of 1.46 × 105, and a subthreshold slope of 0.10 V/dec.

  18. The effect of ALD-grown Al2O3 on the refractive index sensitivity of CVD gold-coated optical fiber sensors

    NASA Astrophysics Data System (ADS)

    Mandia, David J.; Zhou, Wenjun; Ward, Matthew J.; Joress, Howie; Sims, Jeffrey J.; Giorgi, Javier B.; Albert, Jacques; Barry, Seán T.

    2015-10-01

    The combined effect of nanoscale dielectric and metallic layers prepared by atomic layer deposition (ALD) and chemical vapor deposition (CVD) on the refractometric properties of tilted optical fiber Bragg gratings (TFBG) is studied. A high index intermediate layer made up of either 50 nm or 100 nm layers of Al2O3 (refractive index near 1.62) was deposited by ALD and followed by thin gold layers (30-65 nm) deposited from a known single-source gold (I) iminopyrrolidinate CVD precursor. The fabricated devices were immersed in different surrounding refractive indices (SRI) and the spectral transmission response of the TFBGs was measured. Preliminary results indicate that the addition of the dielectric Al2O3 pre-coating enhances the SRI sensitivity by up to 75% but this enhancement is highly dependent on the polarization and dielectric thickness. In fact, the sensitivity decreases by up to 50% for certain cases. These effects are discussed with support from TFBG simulations and models, by quantifying the penetration of the evanescently coupled light out of the fiber through the various coating layers. Additional characterization studies have been carried out on these samples to further correlate the optical behaviour of the coated TFBGs with the physical properties of the gold and Al2O3 layers, using atomic force microscopy x-ray photoelectron spectroscopy and an ensemble of other optical and x-ray absorption spectroscopy techniques. The purity, roughness, and morphology of gold thin films deposited by CVD onto the dielectric-TFBG surface are also provided.

  19. Sulfation and Desulfation Behavior of Pt-BaO/MgO-Al2O3 NOx Storage Reduction Catalyst.

    PubMed

    Jeong, Soyeon; Kim, Do Heui

    2016-05-01

    The comparative study between Pt-BaO/Al2O3 and Pt-BaO/MgO-Al2O3 gives the information about the effect of MgO addition to Al2O3 support on the sulfation and desulfation behavior of Pt-BaO/MgO-Al2O3 NOx storage reduction catalyst. The sulfated two samples were analyzed by using element analysis (EA), X-ray diffraction (XRD), H2 temperature programmed reaction (H2 TPRX) and NOx uptake measurement. The amount of sulfur uptake on 2 wt% Pt-20 wt% BaO/Al2O3 and 2 wt% Pt-20 wt% BaO/MgO-Al2O3 are almost identical as 0.45 and 0.40 of S/Ba, respectively, which yields the drastic decrease in NOx uptake for both sulfated samples. However, after desulfa- tion with H2 at 600 degrees C, the residual sulfur amount on MgO-Al2O3 supported catalyst is three times larger than that on Al2O3 supported one, indicating that sulfur species formed on the former are more stable than those on the latter. It is also well corresponding to the H2 TPRX results where the main H2S peak from MgO-Al2O3 supported sample is observed at higher temperature than Al2O3 supported one, resulting in the lower NOx uptake activity of former sample than the latter one. Meanwhile, after desulfation of MgO-Al2O3 supported sample at 700 degrees C and 800 degrees C, the activity is recovered more significantly due to the removal of the large amount of sulfur while Al2O3 supported one decreases monotonically due to the sintering of Pt crystallite and the formation of BaAl2O4 phase. It is summarized that MgO-Al2O3 supported catalyst enhances the thermal stability of the catalyst, however, forms the stable sulfate species, which needs to be improved to develop the more sulfur resistant NSR catalyst system. PMID:27483765

  20. Sulfation and Desulfation Behavior of Pt-BaO/MgO-Al2O3 NOx Storage Reduction Catalyst.

    PubMed

    Jeong, Soyeon; Kim, Do Heui

    2016-05-01

    The comparative study between Pt-BaO/Al2O3 and Pt-BaO/MgO-Al2O3 gives the information about the effect of MgO addition to Al2O3 support on the sulfation and desulfation behavior of Pt-BaO/MgO-Al2O3 NOx storage reduction catalyst. The sulfated two samples were analyzed by using element analysis (EA), X-ray diffraction (XRD), H2 temperature programmed reaction (H2 TPRX) and NOx uptake measurement. The amount of sulfur uptake on 2 wt% Pt-20 wt% BaO/Al2O3 and 2 wt% Pt-20 wt% BaO/MgO-Al2O3 are almost identical as 0.45 and 0.40 of S/Ba, respectively, which yields the drastic decrease in NOx uptake for both sulfated samples. However, after desulfa- tion with H2 at 600 degrees C, the residual sulfur amount on MgO-Al2O3 supported catalyst is three times larger than that on Al2O3 supported one, indicating that sulfur species formed on the former are more stable than those on the latter. It is also well corresponding to the H2 TPRX results where the main H2S peak from MgO-Al2O3 supported sample is observed at higher temperature than Al2O3 supported one, resulting in the lower NOx uptake activity of former sample than the latter one. Meanwhile, after desulfation of MgO-Al2O3 supported sample at 700 degrees C and 800 degrees C, the activity is recovered more significantly due to the removal of the large amount of sulfur while Al2O3 supported one decreases monotonically due to the sintering of Pt crystallite and the formation of BaAl2O4 phase. It is summarized that MgO-Al2O3 supported catalyst enhances the thermal stability of the catalyst, however, forms the stable sulfate species, which needs to be improved to develop the more sulfur resistant NSR catalyst system.

  1. A novel Al 2O 3 fluorescent nuclear track detector for heavy charged particles and neutrons

    NASA Astrophysics Data System (ADS)

    Akselrod, G. M.; Akselrod, M. S.; Benton, E. R.; Yasuda, N.

    2006-06-01

    A novel Al2O3 fluorescent nuclear track detector (FNTD), recently developed by Landauer, Inc., has demonstrated sensitivity and functionality superior to that of existing nuclear track detectors. The FNTD is based on single crystals of aluminum oxide doped with carbon and magnesium, and having aggregate oxygen vacancy defects (Al2O3:C,Mg). Radiation-induced color centers in the new material have an absorption band at 620 nm and produce fluorescence at 750 nm with a high quantum yield and a short, 75 ± 5 ns, fluorescence lifetime. Non-destructive readout of the detector is performed using a confocal fluorescence microscope. Scanning of the three-dimensional spatial distribution of fluorescence intensity along the track of a heavy charged particle (HCP) permits reconstruction of particle trajectories through the crystal and the LET can be determined as a function of distance along the trajectory based on the fluorescence intensity. Major advantages of Al2O3:C,Mg FNTD over conventionally processed CR-39 plastic nuclear track detector include superior spatial resolution, a wider range of LET sensitivity, no need for post-irradiation chemical processing of the detector and the capability to anneal and reuse the detector. Preliminary experiments have demonstrated that the material possesses a low-LET threshold of <1 keV/μm, does not saturate at LET in water as high as 1800 keV/μm, and is capable of irradiation to fluences in excess of 106 cm-2 without saturation (track overlap).

  2. Particulate strengthened Ni Al2O3 microcomposite HARMs for harsh-environmental micromechanical applications

    NASA Astrophysics Data System (ADS)

    Wang, Tao; Kelly, Kevin W.

    2005-01-01

    The LIGA micromachining process can be used to fabricate high-aspect-ratio microstructures (HARMs), usually from electroplated nickel (Ni). In recent years, there has been a growing demand for applications involving HARMs subjected to harsh environments such as high temperatures, high pressures, constant erosion and friction. Numerous mechanical characterizations and tests revealed that LIGA-fabricated Ni devices might not meet the criteria required in these applications due to their insufficient mechanical and tribological properties under service conditions. By incorporating particulates into the electroplated Ni HARMs, LIGA-compatible particulate strengthened metal matrix composite microstructures result with substantially higher strength and wear resistance. In this paper, nickel-alumina (Ni-Al2O3) composite microstructures were electrodeposited into x-ray-patterned high-aspect-ratio polymethyl-methacrylate (PMMA) cavities from Ni sulfamate electrolytes containing submicron Al2O3 particles. The resulting microstructures were characterized with the use of a scanning electron microscope, a energy dispersive x-ray spectrometer, a wavelength dispersive x-ray spectrometer, a transmission electron microscope and a microhardness tester. It was found that the electrolytes containing surfactant sodium dodecyl sulfate (SDS) alone led to particle agglomeration in deposited microstructures, while homogenous composites were obtained from a bath containing SDS, saccharin and coumarin. Bath agitation has little effect on the particle dispersion under the conditions studied. A hypothesis in view of alumina solid/electrolyte interaction was proposed to better understand the evolution of the agglomerates. It suggests an approach to manipulate the composite material properties by optimizing surfactants to control the balance between the attractive van der Waals force and repulsive force of like-charged particles. Examinations showed that the hardness of the composites was

  3. Shock-induced transformation of Al2O3 and LiF into semiconducting liquids.

    PubMed

    Hicks, D G; Celliers, P M; Collins, G W; Eggert, J H; Moon, S J

    2003-07-18

    Shock compression of sapphire (Al2O3) and lithium fluoride (LiF) to pressures above 5 Mbar has been observed to transform these transparent, wide band-gap insulators into partially degenerate liquid semiconductors with optical reflectivities of several percent. Reflectivities rise steadily with shock pressure up to 45% in sapphire at 20 Mbar and 20% in LiF at 13 Mbar. Using a simple model, the electron scattering length was inferred to be approximately the interatomic distance. In addition, several equation-of-state points at these pressures were measured.

  4. NOx Uptake Mechanism on Pt/BaO/Al2O3 Catalysts

    SciTech Connect

    Kwak, Ja Hun; Kim, Do Heui; Szailer, Tamas; Peden, Charles HF; Szanyi, Janos

    2006-11-01

    The NOx adsorption mechanism on Pt/BaO/Al2O3 catalysts was investigated by performing NOx storage/reduction cycles, NO2 adsorption and NO + O2 adsorption on 2%Pt/(x)BaO/Al2O3 (x = 2, 8 and 20 wt%) catalysts. NOx uptake profiles on 2%Pt/20%BaO/Al2O3 at 523 K show complete uptake behavior for almost 5 min, and then the NOx level starts gradually increasing with time and it reaches 75% of the inlet NOx concentration after 30 min time-on-stream. Although this catalyst shows fairly high NOx conversion at 523 K, only ~ 2.4 wt% out of 20 wt% BaO is converted to Ba(NO3)2. Adsorption studies by using NO2 and NO + O2 suggest two different NOx adsorption mechanisms. The NO2 uptake profile on 2%Pt/20%BaO/Al2O3 shows the absence of a complete NOx uptake period at the beginning of adsorption and the overall NOx uptake is controlled by the gas-solid equilibrium between NO2 and BaO/Ba(NO3)2 phase. When we use NO + O2, complete initial NOx uptake occurs and the time it takes to convert ~ 4 % of BaO to Ba(NO3)2 is independent of the NO concentration. These NOx uptake characteristics suggest that the NO + O2 reaction on the surface of Pt particles produces NO2 that is subsequently transferred to the neighboring BaO phase by spill over. At the beginning of the NOx uptake, this spill-over process is very fast and so it is able to provide complete NOx storage. However, the NOx uptake by this mechanism slows down as BaO in the vicinity of Pt particles are converted to Ba(NO3)2. The formation of Ba(NO3)2 around the Pt particles results in the development of a diffusion barrier for NO2, and increases the probability of NO2 desorption and consequently, the beginning of NOx slip. As NOx uptake by NO2 spill-over mechanism slows down due to the diffusion barrier formation, the rate and extent of NO2 uptake are determined by the diffusion rate of nitrate ions into the BaO bulk, which, in turn, is determined by the gas phase NO2 concentration.

  5. In situ study of atomic layer deposition Al2O3 on GaP (100)

    NASA Astrophysics Data System (ADS)

    Dong, H.; Brennan, B.; Qin, X.; Zhernokletov, D. M.; Hinkle, C. L.; Kim, J.; Wallace, R. M.

    2013-09-01

    The interfacial chemistry of atomic layer deposition (ALD) of Al2O3 on chemically treated GaP (100) has been studied using in situ X-ray photoelectron spectroscopy. A "self-cleaning" effect for Ga-oxide upon exposure to trimethylaluminum is seen to be efficient on the native oxide and chemically treated surfaces. The phosphorus oxide chemical states are seen to change during the ALD process, but the total concentration of P-oxides is seen to remain constant throughout the ALD process.

  6. Calcinations effect on the grain size distributions Al2O3 powder

    NASA Astrophysics Data System (ADS)

    Issa, Tarik Talib; Mohammed, Awattif A.; Kamil, Dunia

    2012-09-01

    Fine of Al2O3 Powder was calcined at 200°C, 400°C, 600°C, and 800°C respectively for 2 hours under static air, x-ray diffraction, optical microscope and grain size distribution were done to analysis the resulting data after calcinations process. Batter particle size was achieved at 800°C of value (0.486) μm, while batter particles mean value of size 7.18 μm was found at 400°C. SEM micrographs shows that the agglomerate particles were vanished due to the calcinations process.

  7. Hydrogen and Carbon Effects on Al2O3 Surface Phases and Metal Deposition

    NASA Astrophysics Data System (ADS)

    Wang, Xiao-Gang; Smith, John

    2005-03-01

    Effects of H and C impurities on α-Al2O3 (0001) surface stability and metal wetting behavior are determined from first principles[1]. The ab initio surface phase diagram for H and C on the alumina surface reveals six distinct surface phases. These different surface phases exhibit a variety of adhesion strengths with Cu and Co, and correspondingly different wetting behaviors. These results are consistent with the varied wetting characteristics observed experimentally. [1] Xiao-Gang Wang and John R. Smith, Phys. Rev. B70, Rapid communications, 081401 (2004).

  8. Viscosity affected by nanoparticle aggregation in Al2O3-water nanofluids

    PubMed Central

    2011-01-01

    An investigation on viscosity was conducted 2 weeks after the Al2O3-water nanofluids having dispersants were prepared at the volume concentration of 1-5%. The shear stress was observed with a non-Newtonian behavior. On further ultrasonic agitation treatment, the nanofluids resumed as a Newtonian fluids. The relative viscosity increases as the volume concentrations increases. At 5% volume concentration, an increment was about 60% in the re-ultrasonication nanofluids in comparison with the base fluid. The microstructure analysis indicates that a higher nanoparticle aggregation had been observed in the nanofluids before re-ultrasonication. PMID:21711762

  9. Head-up display using an inclined Al2O3 column array.

    PubMed

    Cho, Wen-Hao; Lee, Chao-Te; Kei, Chi-Chung; Liao, Bo-Huei; Chiang, Donyau; Lee, Cheng-Chung

    2014-02-01

    An orderly inclined Al2O3 column array was fabricated by atomic layer deposition and sequential electron beam evaporation using a hollow nanosphere template. The transmittance spectra at various angles of incidence were obtained through the use of a Perkin-Elmer Lambda 900 UV/VIS/NIR spectrometer. The inclined column array could display the image information through a scattering mechanism and was transparent at high viewing angles along the deposition plane. This characteristic of the inclined column array gives it potential for applications in head-up displays in the automotive industry.

  10. Shock properties of Al2O3 and ZrO2 ceramics

    NASA Astrophysics Data System (ADS)

    Song, H.; Bless, S. J.; Brar, N. S.; Simha, C. H.; Jang, S. D.

    1994-07-01

    We conducted plate impact experiments on Al2O3 and ZrO2 ceramics using embedded Manganin gages. Composition and microstructure were controlled to study their effects on dynamic properties. Stress time curves were reduced to stress-strain loading paths. Some of the specimens exhibited ``multiple'' HEL's thus indicating the persistence of elastic behavior. Unloading behavior was analyzed by comparing measured stress levels with those predicted by the impedance match solution, which indicated that the unloading was primarily elastic. Anomalies in the plastic wave speed were noted, which may indicate some degree of polymorphic phase change in the shocked material.

  11. Bimetallic Pt-Au Nanocatalysts on ZnO/Al2O3/Monolith for Air Pollution Control.

    PubMed

    Kim, Ki-Joong; Ahn, Ho-Geun

    2015-08-01

    The catalytic activity of a monolithic catalyst with nanosized Pt and Au particles on ZnO/Al2O3 (Pt-Au/ZnO/Al2O3/M) prepared by a wash-coat method was examined, specifically for toluene oxidation. Scanning electron microscopy image showed clearly the formation of a ZnO/Al2O3 layer on the monolith. Nanosized Pt-Au particles on ZnO/Al2O3/M with different sizes could be found in the Pt-Au/ZnO/Al2O3/M catalyst. The conversion of toluene decreased with increasing toluene concentration and was also largely affected by the feed flow rate. The Pt-Au/ZnO/Al2O3/M catalysts prepared in this work have almost the same activity (molecules of toluene per second) compared with a powder Pt-Au/ZnO/Al2O3 catalyst with the same loadings of Pt and Au components; thus this catalyst could be used in controlling air pollution with very low concentrations and high flow rate. PMID:26369207

  12. Surface micromorphology of dental composites [CE-TZP]-[Al2O3] with Ca(+2) modifier.

    PubMed

    Berezina, Sofia; Il'icheva, Alla Alexandrovna; Podzorova, Lyudmila Ivanovna; Ţălu, Ştefan

    2015-09-01

    The objective of this study was to characterize the three-dimensional (3D) surface micromorphology of the ceramics produced from nanoparticles of alumina and tetragonal zirconia (t-ZrO2) with addition of Ca(+2) for sintering improvement. The 3D surface roughness of samples was studied by atomic force microscopy (AFM), fractal analysis of the 3D AFM-images, and statistical analysis of surface roughness parameters. Cube counting method, based on the linear interpolation type, applied for AFM data was used for fractal analysis. The morphology of non-modified ceramic sample was characterized by the rather big (1-2 μm) grains of α-Al2O3 phase with a habit close to hexagonal drowned in solid solution of t-ZrO2 with smooth surface. The pattern surfaces of modified composite content a little amount of elongated prismatic grains with composition close to the phase of СаСеAl3О7 as well as hexahedral α-Al2O3-grains. Fractal dimension, D, as well as height values distribution have been determined for the surfaces of the samples with and without modifying. It can be concluded that the smoothest surface is of the modified samples with Ca(+2) modifier but the most regular one is of the non-modified samples. A connection was observed between the surface morphology and the physical properties as assessed in previous works. PMID:26190812

  13. Dissolution Behavior of Indium in CaO-SiO2-Al2O3 Slag

    NASA Astrophysics Data System (ADS)

    Ko, Kyu Yeol; Park, Joo Hyun

    2011-12-01

    The solubility of indium in a molten CaO-SiO2-Al2O3 system was measured at 1773 K (1500 °C) to establish the dissolution mechanism of indium under a highly reducing atmosphere. The solubility of indium increases with increasing oxygen potential, whereas it decreases with increased activity of basic oxide. Therefore, a dissolution mechanism of indium can be constructed according to the following equation: {{In}}({{s}}) + 1/4{{O}}2 ({{g}}) = ({{In}}^{ + } ) + 1/2({{O}}^{2 - } ) The relationship between indium capacity and sulfide capacity shows a good correlation that is consistent with theoretical expectations. The enthalpy change of the indium dissolution reaction is negative, which indicates that the dissolution is an exothermic reaction. The heat of dissolution into high-silica melts is greater than that into low-silica melts. The solubility of indium is strongly dependent on the silica content. The activity coefficient, and thus the excess free energy of In2O, decreases linearly with increasing silica content, indicating that the In2O is believed to behave as a weak basic oxide in the current CaO-SiO2-Al2O3 ternary system under reducing conditions.

  14. Texture Analyses of Ti/Al2O3 Nanocomposite Produced Using Friction Stir Processing

    NASA Astrophysics Data System (ADS)

    Shafiei-Zarghani, Aziz; Kashani-Bozorg, Seyed Farshid; Gerlich, Adrian P.

    2016-11-01

    The texture evolution of Ti/Al2O3 nanocomposite fabricated using friction stir processing (FSP) was investigated at both macroscopic and microscopic levels employing X-ray diffraction and electron backscattering diffraction techniques. The developed textures were compared with ideal shear textures of hexagonal close-packed (hcp) structure, revealing that the fabricated nanocomposite is dominated by the P 1 hcp (fiber { 10bar{1}1} < 1bar{2}10rangle (and relatively weak B (fiber { 10bar{1}1} < bar{1}bar{1}23rangle ) textures. The analyses of macro- and microtextures showed that the presence of nanosized Al2O3 particles activated the pyramidal { 10bar{1}1} < bar{1}bar{1}23rangle slip system in addition to dominant { 10bar{1}0} < 1bar{2}10rangle prism, basal { {0002} }< 1bar{2}10rangle, and pyramidal { 10bar{1}1} < 1bar{2}10rangle slip systems which normally govern plastic deformation during FSP of commercially pure titanium alloy. Moreover, the presence of nanoparticles promoted the occurrence of continuous dynamic recrystallization as well as increasing the fraction of high-angle grain boundaries within the developed microstructure.

  15. Activation energy of negative fixed charges in thermal ALD Al2O3

    NASA Astrophysics Data System (ADS)

    Kühnhold-Pospischil, S.; Saint-Cast, P.; Richter, A.; Hofmann, M.

    2016-08-01

    A study of the thermally activated negative fixed charges Qtot and the interface trap densities Dit at the interface between Si and thermal atomic-layer-deposited amorphous Al2O3 layers is presented. The thermal activation of Qtot and Dit was conducted at annealing temperatures between 220 °C and 500 °C for durations between 3 s and 38 h. The temperature-induced differences in Qtot and Dit were measured using the characterization method called corona oxide characterization of semiconductors. Their time dependency were fitted using stretched exponential functions, yielding activation energies of EA = (2.2 ± 0.2) eV and EA = (2.3 ± 0.7) eV for Qtot and Dit, respectively. For annealing temperatures from 350 °C to 500 °C, the changes in Qtot and Dit were similar for both p- and n-type doped Si samples. In contrast, at 220 °C the charging process was enhanced for p-type samples. Based on the observations described in this contribution, a charging model leading to Qtot based on an electron hopping process between the silicon and Al2O3 through defects is proposed.

  16. Cold-Sprayed Ni-Al2O3 Coatings for Applications in Power Generation Industry

    NASA Astrophysics Data System (ADS)

    Sevillano, F.; Poza, P.; Múnez, C. J.; Vezzù, S.; Rech, S.; Trentin, A.

    2013-06-01

    Cermets coatings are extensively used in energy applications both because of their high wear resistance as required, for example, in components like gas turbine sealants, and because of their specific functionality as required in solar absorbers. So far, high-temperature thermal spraying and physical vapor deposition have traditionally been used to deposit this kind of coatings. In this study, Ni-Al2O3 coatings have been deposited using a Kinetic®3000 cold-spray system starting from Ni and Al2O3 powders blend; five blends have been prepared setting the alumina content in the feedstock to 10, 25, 50, 75, and 90 wt.%. The embedded alumina ranges between a few percent weight up to 16 and 31 wt.%, while the microhardness shows a deep increase from 175 Vickers in the case of pure Ni coatings up to 338 Vickers. The spray and coating growth mechanism have been discussed, with special attention to the fragmentation of the ceramic particles during the impact. Finally, the coating behavior at high temperature was analyzed by oxidation tests performed in air at 520 °C emphasizing a good oxidation resistance that could represent a very promising basis for application in power generation systems.

  17. Experimental determination of ampicillin adsorption to nanometer-size Al2O3 in water.

    PubMed

    Peterson, Jonathan W; Burkhart, Rachel S; Shaw, Drew C; Schuiling, Amanda B; Haserodt, Megan J; Seymour, Michael D

    2010-09-01

    Transport of antibiotics in soil-water systems is controlled in part by adsorption to nanometer-size (10(-9)m) particles. Batch adsorption experiments were performed with ampicillin, a common amphoteric antibiotic, and 50 nm-Al(2)O(3) (alpha-alumina) at different pH conditions. Sorption to Al(2)O(3) can be described by linear isotherms for 2.9 microM-2.9 mM ampicillin concentrations. Distribution coefficients (K(d)) are 11.1 (+/-0.32)L kg(-1) at pH 2, 0.55 (+/-.04) L kg(-1) at pH 4, 21.9 (+/-0.9) L kg(-1) at pH 6, and 39.5 (+/-2.2) L kg(-1) at pH 8. At pH 2, approximately 47% of the initially adsorbed drug was removable by rinsing, at pH 4-56% was removed. Only 7% of the drug could be removed by rinsing at pH 6, and 3% at pH 8. Weak electrostatic forces dominate at pH<4, and stronger attachment mechanisms at higher pH. Low yields in rinsing (desorption) experiments at pH6 indicate strong attachment mechanisms, either electrostatic or possibly surface complexation. PMID:20638098

  18. Electrodeposition of Ni-Al2O3 nano composite coating and evaluation of wear characteristics

    NASA Astrophysics Data System (ADS)

    Raghavendra, C. R.; Basavarajappa, S.; Sogalad, Irappa

    2016-09-01

    Electrodeposition is one of the most technologically feasible and economically superior technique for producing metallic coating. The advancement in the application of nano particles has grabbed the attention in all fields of engineering. In this present study an attempt has been made on the nano particle composite coating on aluminium substrate by electrodeposition process. The aluminium surface requires a specific pre-treatment for better adherence of coating. In light of this a thin zinc layer is coated on the aluminium substrate by electroless process. This layer offers protection against oxidation thus prevents the formation of a native oxide layer. In this work Ni-Al2O3 composite coating were successfully coated by varying the process parameters such as bath temperature, current density and particle loading. The experimentation was performed using central composite design based 20 trials of experiments. The effect of process parameters on surface morphology and wear behavior was studied. The results shown a better wear resistance of Ni-Al2O3 composite electrodeposited coating compared to Ni coating. The particle loading and interaction effect of current density with temperature has greater significant effect on wear rate followed by the bath temperature. The decrease in wear rate was observed with the increased current density and temperature.

  19. Containerless solidification of undercooled SrO-Al2O3 binary melts.

    PubMed

    Kato, Katsuyoshi; Masuno, Atsunobu; Inoue, Hiroyuki

    2015-03-01

    The solidification of the SrO-Al2O3 binary system was investigated under containerless conditions using an aerodynamic levitation furnace. Glass formation was observed in compositions with 35-45 mol% SrO and 55-75 mol% SrO. Cooling curves were obtained at a constant cooling rate in the range of 1-1000 °C s(-1). The crystallization temperature was apparently independent of the cooling rate and far below the melting point when the sample was fully crystallized, whereas it decreased when the sample was partially crystallized. The difference between the crystallization temperature and the melting point under containerless conditions is considered a good measure of the glass-forming ability when there is not much difference in the critical cooling rates between the melt compositions. Furthermore, the homogeneous nucleation theory suggests that the apparent time-independent crystallization temperature is attributed to the high glass-forming ability of the SrO-Al2O3 binary system. The results suggest that the experimentally obtained continuous cooling transformation diagrams under containerless conditions provide new insights regarding solidification from an undercooled melt. PMID:25655235

  20. Sulfuric acid baking and leaching of spent Co-Mo/Al2O3 catalyst.

    PubMed

    Kim, Hong-In; Park, Kyung-Ho; Mishra, Devabrata

    2009-07-30

    Dissolution of metals from a pre-oxidized refinery plant spent Co-Mo/Al(2)O(3) catalyst have been tried through low temperature (200-450 degrees C) sulfuric acid baking followed by mild leaching process. Direct sulfuric acid leaching of the same sample, resulted poor Al and Mo recoveries, whereas leaching after sulfuric acid baking significantly improved the recoveries of above two metals. The pre-oxidized spent catalyst, obtained from a Korean refinery plant found to contain 40% Al, 9.92% Mo, 2.28% Co, 2.5% C and trace amount of other elements such as Fe, Ni, S and P. XRD results indicated the host matrix to be poorly crystalline gamma- Al(2)O(3). The effect of various baking parameters such as catalyst-to-acid ratio, baking temperature and baking time on percentage dissolutions of metals has been studied. It was observed that, metals dissolution increases with increase in the baking temperature up to 300 degrees C, then decreases with further increase in the baking temperature. Under optimum baking condition more than 90% Co and Mo, and 93% Al could be dissolved from the spent catalyst with the following leaching condition: H(2)SO(4)=2% (v/v), temperature=95 degrees C, time=60 min and Pulp density=5%.

  1. Revisiting the Al/Al2O3 Interface: Coherent Interfaces and Misfit Accommodation

    PubMed Central

    Pilania, Ghanshyam; Thijsse, Barend J.; Hoagland, Richard G.; Lazić, Ivan; Valone, Steven M.; Liu, Xiang-Yang

    2014-01-01

    We study the coherent and semi-coherent Al/α-Al2O3 interfaces using molecular dynamics simulations with a mixed, metallic-ionic atomistic model. For the coherent interfaces, both Al-terminated and O-terminated nonstoichiometric interfaces have been studied and their relative stability has been established. To understand the misfit accommodation at the semi-coherent interface, a 1-dimensional (1D) misfit dislocation model and a 2-dimensional (2D) dislocation network model have been studied. For the latter case, our analysis reveals an interface dislocation structure with a network of three sets of parallel dislocations, each with pure-edge character, giving rise to a pattern of coherent and stacking-fault-like regions at the interface. Structural relaxation at elevated temperatures leads to a further change of the dislocation pattern, which can be understood in terms of a competition between the stacking fault energy and the dislocation interaction energy at the interface. Our results are expected to serve as an input for the subsequent dislocation dynamics models to understand and predict the macroscopic mechanical behavior of Al/α-Al2O3 composite heterostructures. PMID:24670940

  2. Tribological Properties of Ti(Al,O)/Al2O3 Composite Coating by Thermal Spraying

    NASA Astrophysics Data System (ADS)

    Salman, Asma; Gabbitas, Brian; Cao, Peng; Zhang, Deliang

    The use of thermal spray coatings provides protection to the surfaces operating in severe environments. The main goal of the current work is to investigate the possibility of using a high velocity air fuel (HVAF) thermally sprayed wear resistant Ti(Al,O)/Al2O3 coating on tool steel (H13) which is used for making dies for aluminium high pressure die casting and dummy blocks aluminium extrusion. A feedstock of Ti(Al,O)/Al2O3 composite powder was produced from a mixture of Al and TiO2 powders by high energy mechanical milling, followed by a thermal reaction process. The feedstock was then thermally sprayed using a high velocity air-fuel (HVAF) technique onto H13 steel substrates to produce a composite coating. The present study describes and compares the tribological properties such as friction and sliding wear rate of the coating both at room and high temperature (700°C). The wear resistance of the coating was investigated by a tribometer using a spherical ended alumina pin as a counter body under dry and lubricating conditions. The results showed that composite coating has lower wear rate at high temperature than at room temperature without using lubricant. The composite coating was characterized using scanning electron microscopy (SEM), optical microscopy and X-ray diffractometry (XRD). This paper reports the experimental observations and discusses the wear resistance performance of the coatings at room and high temperatures.

  3. Some TEM observations of Al2O3 scales formed on NiCrAl alloys

    NASA Technical Reports Server (NTRS)

    Smialek, J.; Gibala, R.

    1979-01-01

    The microstructural development of Al2O3 scales on NiCrAl alloys has been examined by transmission electron microscopy. Voids were observed within grains in scales formed on a pure NiCrAl alloy. Both voids and oxide grains grew measurably with oxidation time at 1100 C. The size and amount of porosity decreased towards the oxide-metal growth interface. The voids resulted from an excess number of oxygen vacancies near the oxidemetal interface. Short-circuit diffusion paths were discussed in reference to current growth stress models for oxide scales. Transient oxidation of pure, Y-doped, and Zr-doped NiCrAl was also examined. Oriented alpha-(Al, Cr)2O3 and Ni(Al, Cr)2O4 scales often coexisted in layered structures on all three alloys. Close-packed oxygen planes and directions in the corundum and spinel layers were parallel. The close relationship between oxide layers provided a gradual transition from initial transient scales to steady state Al2O3 growth.

  4. Texture Analyses of Ti/Al2O3 Nanocomposite Produced Using Friction Stir Processing

    NASA Astrophysics Data System (ADS)

    Shafiei-Zarghani, Aziz; Kashani-Bozorg, Seyed Farshid; Gerlich, Adrian P.

    2016-08-01

    The texture evolution of Ti/Al2O3 nanocomposite fabricated using friction stir processing (FSP) was investigated at both macroscopic and microscopic levels employing X-ray diffraction and electron backscattering diffraction techniques. The developed textures were compared with ideal shear textures of hexagonal close-packed (hcp) structure, revealing that the fabricated nanocomposite is dominated by the P 1 hcp (fiber { 10bar{1}1} < 1bar{2}10rangle (and relatively weak B (fiber { 10bar{1}1} < bar{1}bar{1}23rangle ) textures. The analyses of macro- and microtextures showed that the presence of nanosized Al2O3 particles activated the pyramidal { 10bar{1}1} < bar{1}bar{1}23rangle slip system in addition to dominant { 10bar{1}0} < 1bar{2}10rangle prism, basal { {0002} }< 1bar{2}10rangle, and pyramidal { 10bar{1}1} < 1bar{2}10rangle slip systems which normally govern plastic deformation during FSP of commercially pure titanium alloy. Moreover, the presence of nanoparticles promoted the occurrence of continuous dynamic recrystallization as well as increasing the fraction of high-angle grain boundaries within the developed microstructure.

  5. Decomposition of hexachlorobenzene over Al2O3 supported metal oxide catalysts.

    PubMed

    Zhang, Lifei; Zheng, Minghui; Zhang, Bing; Liu, Wenbin; Gao, Lirong; Ba, Te; Ren, Zhiyuan; Su, Guijin

    2008-01-01

    Decomposition of hexachlorobenzene (HCB) was investigated over several metal oxides (i.e., MgO, CaO, BaO, La2O3, CeO2, MnO2, Fe2O3, and Co3O4) supported on Al2O3, which was achieved in closed system at a temperature of 300 degrees C. Catalysts were prepared by incipient wetness impregnation with different metal oxides loading and impregnating solvents. The decomposition efficiency of different catalysts for this reaction depends on the nature of the metal oxide used, and Al2O3 supported La2O3 was found to be the most active one. Pentachlorobenzene (PeCB), and all tetrachlorobenzene (TeCB), trichlorobenzene (TrCB), and dichlorobenzene (DCB) isomers were detected after the decomposition reaction, indicating that the decomposition was mainly a dechlorination process. The detection of all lower chlorinated benzenes suggested the complexity of decomposition and the presence of more than one dechlorination pathway. PMID:19209643

  6. Cyclic Oxidation of FeCrAlY/Al2O3 Composites

    NASA Technical Reports Server (NTRS)

    Nesbitt, James A.; Draper, Susan L.; Barrett, Charles A.

    1999-01-01

    Three-ply FeCrAlY/Al2O3 composites and FeCrAlY matrix-only samples were cyclically oxidized at 1000 C and 1100 C for up to 1000 1-hr cycles. Fiber ends were exposed at the ends of the composite samples. Following cyclic oxidation, cracks running parallel to and perpendicular to the fibers were observed on the large surface of the composite. In addition, there was evidence of increased scale damage and spallation around the exposed fiber ends, particularly around the middle ply fibers. This damage was more pronounced at the higher temperature. The exposed fiber ends showed cracking between fibers in the outer plies, occasionally with Fe and Cr-rich oxides growing out of the cracks. Large gaps developed at the fiber/matrix interface around many of the fibers, especially those in the outer plies. Oxygen penetrated many of these gaps resulting in significant oxide formation at the fiber/matrix interface far within the composite sample. Around several fibers, the matrix was also internally oxidized showing Al2O3 precipitates in a radial band around the fibers. The results show that these composites have poor cyclic oxidation resistance due to the CTE mismatch and inadequate fiber/matrix bond strength at temperatures of 1000 C and above.

  7. A light-scattering study of Al2O3 abrasives of various grit sizes

    NASA Astrophysics Data System (ADS)

    Heinson, Yuli W.; Chakrabarti, Amitabha; Sorensen, Christopher M.

    2016-09-01

    We report light scattering phase function measurements for irregularly shaped Al2O3 abrasive powders of various grit sizes. Q-space analysis is applied to the angular scattering to reveal a forward scattering regime, Guinier regime, power law regime with quantifiable exponents, and an enhanced backscattering regime. The exponents of the power laws for Al2O3 abrasives decrease with increasing internal coupling parameter ρ ‧ , which is in agreement with previous observations for other irregular particles. Unlike other dust particles previously studied showing single power laws under Q-space analysis, the largest three abrasives, for which ρ ‧ ≳ 100 , showed a kink in the power law, which is possibly due to the higher degree of symmetry for the abrasives than for all the particles studied previously. Direct comparison of the 1200, 1000, and 800 grit abrasive scattering to scattering by corresponding spheres shows that the scatterings approximately coincide at the spherical particle qR ≃ ρ ‧ crossover point. Furthermore, the scattering at the maximum qR = 2 kR by the irregularly shaped abrasives is close to the geometric centers of the glories of the spheres.

  8. Atomic Layer Deposition Al2O3 Thin Films in Magnetized Radio Frequency Plasma Source

    NASA Astrophysics Data System (ADS)

    Li, Xingcun; Chen, Qiang; Sang, Lijun; Yang, Lizhen; Liu, Zhongwei; Wang, Zhenduo

    Self-limiting deposition of aluminum oxide (Al2O3) thin films were accomplished by the plasma-enhanced chemical vapor deposition using trimethyl aluminum (TMA) and O2 as precursor and oxidant, respectively, where argon was kept flowing in whole deposition process as discharge and purge gas. In here we present a novel plasma source for the atomic layer deposition technology, magnetized radio frequency (RF) plasma. Difference from the commercial RF source, magnetic coils were amounted above the RF electrode, and the influence of the magnetic field strength on the deposition rate and morphology are investigated in detail. It concludes that a more than 3 Å/ purging cycle deposition rate and the good quality of ALD Al2O3 were achieved in this plasma source even without extra heating. The ultra-thin films were characterized by including Fourier transform infrared (FTIR) spectroscopy, X-ray photoelectric spectroscopy (XPS), scanning electron microscopy (SEM), and atomic force microscopy (AFM). The high deposition rates obtained at ambient temperatures were analyzed after in-situ the diagnostic of plasmas by Langmuir probe.

  9. Fabrication of Al2O3-W Functionally Graded Materials by Slipcasting Method

    NASA Astrophysics Data System (ADS)

    Katayama, Tomoyuki; Sukenaga, Sohei; Saito, Noritaka; Kagata, Hajime; Nakashima, Kunihiko

    2011-10-01

    We have successfully fabricated a functionally graded material (FGM) from tungsten and alumina powders by a slip-casting method. This FGM has applications as a sealing and conducting component for high-intensity discharge lamps (HiDLs) that have a translucent alumina envelope. Two types of W powder, with different oxidizing properties, were used as the raw powders for the Al2O3-W FGM. "Oxidized W" was prepared by heat-treatment at 200 °C for 180 min in air. Alumina and each of the W powders were mixed in ultrapure water by ultrasonic stirring. The slurry was then cast into a cylindrical acrylic mold, which had a base of porous alumina, under controlled pressure. The green compacts were subsequently dried, and then sintered using a vacuum furnace at 1600 °C for a fixed time. The microstructures of the FGMs were observed by scanning electron microscopy (SEM) of the polished section. The Al2O3-W FGM with the "oxidized W" powder resulted in a microscopic compositional gradient. However, the FGM with "as-received W" showed no compositional gradient. This result was mainly attributed to the difference between the ζ-potentials of the W powders with the different oxidizing conditions; basically "oxidized W" powder tends to disperse because of the larger ζ-potential of the oxide layer coated on the W powder core.

  10. Al2O3 fiber strength degradation in metal and intermetallic matrix composites

    NASA Technical Reports Server (NTRS)

    Draper, S. L.; Locci, I. E.

    1994-01-01

    The mechanisms for fiber damage in single crystal Al2O3 fiber-reinforced composites were investigated. Both fiber fragmentation and fiber strength degradation were observed in composites with a variety of matrix compositions. Four mechanisms that may be contributing to the fiber strength loss have been proposed and include matrix reaction, reaction with binders, residual stress-induced damage, and pressure from hot pressing. The effect of matrix reaction was separated from the other three effects by sputter-coating the matrices on cleaned fibers and annealing with a temperature profile that simulates processing conditions. These experiments revealed that Y and Cr in FeCrAlY base alloys and Zr in NiAl alloys reacted with the fiber, and grooves and adherent particles were formed on the fiber surface which were responsible for the strength loss. The effects of the matrix reaction appeared to dominate over the other possible mechanisms, although evidence for reaction with binders was also found. Ridges on the fiber surface, which reflected the grain boundaries of the matrix, were also observed. In order for single-crystal Al2O3 to be used as a fiber in MMC's and IMC's, a matrix or protective coating which minimizes matrix reaction during processing will be necessary. Of the matrices investigated, the Thermo-span(sup TM) alloy was the least damaging to fiber properties.

  11. Revisiting the Al/Al2O3 Interface: Coherent Interfaces and Misfit Accommodation

    DOE PAGES

    Pilania, Ghanshyam; Thijsse, Barend J.; Hoagland, Richard G.; Lazić, Ivan; Valone, Steven M.; Liu, Xiang-Yang

    2014-03-27

    We report the coherent and semi-coherent Al/α-Al2O3 interfaces using molecular dynamics simulations with a mixed, metallic-ionic atomistic model. For the coherent interfaces, both Al-terminated and O-terminated nonstoichiometric interfaces have been studied and their relative stability has been established. To understand the misfit accommodation at the semi-coherent interface, a 1-dimensional (1D) misfit dislocation model and a 2-dimensional (2D) dislocation network model have been studied. For the latter case, our analysis reveals an interface dislocation structure with a network of three sets of parallel dislocations, each with pure-edge character, giving rise to a pattern of coherent and stacking-fault-like regions at the interface.more » Structural relaxation at elevated temperatures leads to a further change of the dislocation pattern, which can be understood in terms of a competition between the stacking fault energy and the dislocation interaction energy at the interface. In conclusion, our results are expected to serve as an input for the subsequent dislocation dynamics models to understand and predict the macroscopic mechanical behavior of Al/α-Al2O3 composite heterostructures.« less

  12. Density Measurements of Low Silica CaO-SiO2-Al2O3 Slags

    NASA Astrophysics Data System (ADS)

    Muhmood, Luckman; Seetharaman, Seshadri

    2010-08-01

    Density measurements of a low-silica CaO-SiO2-Al2O3 system were carried out using the Archimedes principle. A Pt 30 pct Rh bob and wire arrangement was used for this purpose. The results obtained were in good agreement with those obtained from the model developed in the current group as well as with other results reported earlier. The density for the CaO-SiO2 and the CaO-Al2O3 binary slag systems also was estimated from the ternary values. The extrapolation of density values for high-silica systems also showed good agreement with previous works. An estimation for the density value of CaO was made from the current experimental data. The density decrease at high temperatures was interpreted based on the silicate structure. As the mole percent of SiO2 was below the 33 pct required for the orthosilicate composition, discrete {text{SiO}}4^{4 - } tetrahedral units in the silicate melt would exist along with O2- ions. The change in melt expansivity may be attributed to the ionic expansions in the order of {text{Al}}^{ 3+ } - {text{O}}^{ 2- } < {text{Ca}}^{ 2+ } - {text{O}}^{ 2- } < {text{Ca}}^{ 2+ } - {text{O}}^{ - } Structural changes in the ternary slag also could be correlated to a drastic change in the value of enthalpy of mixing.

  13. Tribological performance of Graphene/Carbon nanotube hybrid reinforced Al2O3 composites

    PubMed Central

    Yazdani, Bahareh; Xu, Fang; Ahmad, Iftikhar; Hou, Xianghui; Xia, Yongde; Zhu, Yanqiu

    2015-01-01

    Tribological performance of the hot-pressed pure Al2O3 and its composites containing various hybrid contents of graphene nanoplatelets (GNPs) and carbon nanotubes (CNTs) were investigated under different loading conditions using the ball-on-disc method. Benchmarked against the pure Al2O3, the composite reinforced with a 0.5 wt% GNP exhibited a 23% reduction in the friction coefficient along with a promising 70% wear rate reduction, and a hybrid reinforcement consisting of 0.3 wt.% GNPs + 1 wt.% CNTs resulted in even better performance, with a 86% reduction in the wear rate. The extent of damage to the reinforcement phases caused during wear was studied using Raman spectroscopy. The wear mechanisms for the composites were analysed based on the mechanical properties, brittleness index and microstructural characterizations. The excellent coordination between GNPs and CNTs contributed to the excellent wear resistance property in the hybrid GNT-reinforced composites. GNPs played the important role in the formation of a tribofilm on the worn surface by exfoliation; whereas CNTs contributed to the improvement in fracture toughness and prevented the grains from being pulled out during the tribological test. PMID:26100097

  14. The effect of particle size on the electrical conductivity of CuCl (Al2O3) composites

    NASA Technical Reports Server (NTRS)

    Chang, M. R.-W.; Shahi, K.; Wagner, J. B., Jr.

    1984-01-01

    The conductivity of CuCl containing Al2O3 of 0.06, 0.3, 1, 3, 8, and 15 micron sized particles was measured between 25 and 390 C. Conductivity was enhanced for the 0.06 and 0.3 sized Al2O3 particles for temperatures below approximately 250 C. The maximum enhancement occurred at 10 m/o of 0.06 micron Al2O3 at 25 C. Uncertain degrees of agglomeration as well as the grain size of the matrix were found to be significant.

  15. Self-aligned graphene field-effect transistors on SiC (0001) substrates with self-oxidized gate dielectric

    NASA Astrophysics Data System (ADS)

    Jia, Li; Cui, Yu; Li, Wang; Qingbin, Liu; Zezhao, He; Shujun, Cai; Zhihong, Feng

    2014-07-01

    A scalable self-aligned approach is employed to fabricate monolayer graphene field-effect transistors on semi-insulated 4H-SiC (0001) substrates. The self-aligned process minimized access resistance and parasitic capacitance. Self-oxidized Al2O3, formed by deposition of 2 nm Al followed by exposure in air to be oxidized, is used as gate dielectric and shows excellent insulation. An intrinsic cutoff frequency of 34 GHz and maximum oscillation frequency of 36.4 GHz are realized for the monolayer graphene field-effect transistor with a gate length of 0.2 μm. These studies show a pathway to fabricate graphene transistors for future applications in ultra-high frequency circuits.

  16. Electrical properties of (Al2O3)x(TiO2)1-x films deposited on a silicon substrate

    NASA Astrophysics Data System (ADS)

    Vitanov, P.; Alexieva, Z.; Harizanova, A.; Horvath, Z.; Dozsa, L.

    2008-05-01

    Direct current conductance in Al/(Al2O3)X(TiO2)1-X/silicon structure was studied, the dielectric layers being deposited by the chemical solution deposition method. The measurements were carried out at room temperature and 320, 340 and 360 K. The results correspond to bulk-limited conduction of the Poole-Frenkel type. High voltages and temperature lead to an additional current rise, explained by thermal excitation and tunneling of electrons through the lowered Poole-Frenkel barrier.

  17. Mesoscopic analysis of leakage current suppression in ZrO2/Al2O3/ZrO2 nano-laminates

    NASA Astrophysics Data System (ADS)

    Martin, Dominik; Grube, Matthias; Weinreich, Wenke; Müller, Johannes; Weber, Walter M.; Schröder, Uwe; Riechert, Henning; Mikolajick, Thomas

    2013-05-01

    Metal-Insulator-Metal capacitors, with ZrO2/Al2O3/ZrO2 (ZAZ)-nanolaminate thin-films as a dielectric layer, exhibit reduced leakage currents compared to corresponding capacitors based on pure ZrO2 while maintaining a sufficiently high dielectric constant for the DRAM application. This work is a comparative study demonstrating how the incorporation of a small amount of Al is responsible for the suppression of crystallization during deposition. Extensive electrical characterization leads to the identification of a defect band which conductive atomic force microscopy shows to be formed along crystallite grain boundaries, extending through the entire ZrO2-film. The incorporation of a sub-layer of Al2O3 prevents these grain boundaries resulting in an effective reduction of leakage currents, despite the film being in the nanocrystalline phase, necessary for it to exhibit the required high dielectric constant. A transport model based on phonon assisted trap to trap tunneling is proposed.

  18. Influence of reaction with XeF2 on surface adhesion of Al and Al2O3 surfaces

    NASA Astrophysics Data System (ADS)

    Zhang, Tianfu; Park, Jeong Y.; Huang, Wenyu; Somorjai, Gabor A.

    2008-10-01

    The change in surface adhesion after fluorination of Al and Al2O3 surfaces using XeF2 was investigated with atomic force microscopy. The chemical interaction between XeF2 and Al and Al2O3 surfaces was studied by in situ x-ray photoelectron spectroscopy. Fresh Al and Al2O3 surfaces were obtained by etching top silicon layers of Si /Al and Si /Al2O3 with XeF2. The surface adhesion and chemical composition were measured after the exposure to air or annealing (at 200°C under vacuum). The correlation between the adhesion force increase and presence of AlF3 on the surface was revealed.

  19. The role of copper species on Cu/γ-Al2O3 catalysts for NH3-SCO reaction

    NASA Astrophysics Data System (ADS)

    Liang, Chunxia; Li, Xinyong; Qu, Zhenping; Tade, Moses; Liu, Shaomin

    2012-02-01

    UV-vis spectra, XRD, H2-TPR, TEM and ESR were used to characterize a series of Cu/γ-Al2O3 catalysts, which were prepared by incipient wetness impregnation using copper nitrate, copper acetate or copper sulfate as precursors, to study the role of Cu species on Cu/γ-Al2O3 catalysts for NH3-SCO reaction. It was found that the mixture of CuO phase and CuAl2O4 phase formed on various Cu/γ-Al2O3 catalysts, and the Cu species and dispersion had significant influence on the Cu/γ-Al2O3 activity. Highly dispersed CuO phase on the support would be related with its high activity for the NH3-SCO reaction.

  20. Epitaxial growth and electrochemical transfer of graphene on Ir(111)/α-Al2O3(0001) substrates

    NASA Astrophysics Data System (ADS)

    Koh, Shinji; Saito, Yuta; Kodama, Hideyuki; Sawabe, Atsuhito

    2016-07-01

    Low-pressure chemical vapor deposition growth of graphene on Iridium (Ir) layers epitaxially deposited on α-Al2O3 (0001) substrates was investigated. The X-ray diffraction, Raman and reflection high energy electron diffraction characterizations revealed that graphene films were epitaxially grown on Ir(111) layers, and the in-plane epitaxial relationship between graphene, Ir(111), and α-Al2O3(0001) was graphene ⟨ 1 1 ¯ 00 ⟩//Ir⟨ 11 2 ¯ ⟩//α-Al2O3⟨ 11 2 ¯ 0 ⟩. The graphene on Ir(111) was electrochemically transferred onto SiO2/Si substrates. We also demonstrated the reuse of the Ir(111)/α-Al2O3(0001) substrates in multiple growth and transfer cycles.

  1. Thermal expansion and elastic anisotropy in single crystal Al2O3 and SiC reinforcements

    NASA Technical Reports Server (NTRS)

    Salem, Jonathan A.; Li, Zhuang; Bradt, Richard C.

    1994-01-01

    In single crystal form, SiC and Al2O3 are attractive reinforcing components for high temperature composites. In this study, the axial coefficients of thermal expansion and single crystal elastic constants of SiC and Al2O3 were used to determine their coefficients of thermal expansion and Young's moduli as a function of crystallographic orientation and temperature. SiC and Al2O3 exhibit a strong variation of Young's modulus with orientation; however, their moduli and anisotropies are weak functions of temperature below 1000 C. The coefficients of thermal expansion exhibit significant temperature dependence, and that of the non-cubic Al2O3 is also a function of crystallographic orientation.

  2. On the Structural and Chemical Characteristics of Co/Al2O3/graphene Interfaces for Graphene Spintronic Devices

    PubMed Central

    Canto, Bárbara; Gouvea, Cristol P.; Archanjo, Bráulio S.; Schmidt, João E.; Baptista, Daniel L.

    2015-01-01

    We report a detailed investigation of the structural and chemical characteristics of thin evaporated Al2O3 tunnel barriers of variable thickness grown onto single-layer graphene sheets. Advanced electron microscopy and spectrum-imaging techniques were used to investigate the Co/Al2O3/graphene/SiO2 interfaces. Direct observation of pinhole contacts was achieved using FIB cross-sectional lamellas. Spatially resolved EDX spectrum profiles confirmed the presence of direct point contacts between the Co layer and the graphene. The high surface diffusion properties of graphene led to cluster-like Al2O3 film growth, limiting the minimal possible thickness for complete barrier coverage onto graphene surfaces using standard Al evaporation methods. The results indicate a minimum thickness of nominally 3 nm Al2O3, resulting in a 0.6 nm rms rough film with a maximum thickness reaching 5 nm. PMID:26395513

  3. On the Structural and Chemical Characteristics of Co/Al2O3/graphene Interfaces for Graphene Spintronic Devices.

    PubMed

    Canto, Bárbara; Gouvea, Cristol P; Archanjo, Bráulio S; Schmidt, João E; Baptista, Daniel L

    2015-01-01

    We report a detailed investigation of the structural and chemical characteristics of thin evaporated Al2O3 tunnel barriers of variable thickness grown onto single-layer graphene sheets. Advanced electron microscopy and spectrum-imaging techniques were used to investigate the Co/Al2O3/graphene/SiO2 interfaces. Direct observation of pinhole contacts was achieved using FIB cross-sectional lamellas. Spatially resolved EDX spectrum profiles confirmed the presence of direct point contacts between the Co layer and the graphene. The high surface diffusion properties of graphene led to cluster-like Al2O3 film growth, limiting the minimal possible thickness for complete barrier coverage onto graphene surfaces using standard Al evaporation methods. The results indicate a minimum thickness of nominally 3 nm Al2O3, resulting in a 0.6 nm rms rough film with a maximum thickness reaching 5 nm. PMID:26395513

  4. Effects of plasma-enhanced chemical vapor deposition (PECVD) on the carrier lifetime of Al2O3 passivation stack

    NASA Astrophysics Data System (ADS)

    Cho, Kuk-Hyun; Cho, Young Joon; Chang, Hyo Sik; Kim, Kyung-Joong; Song, Hee Eun

    2015-09-01

    We investigated the effect on the minority carrier lifetime of atomic layer deposition (ALD) Al2O3 passivation by a plasma-enhanced chemical vapor deposition (PECVD) SiON layer in Si/Al2O3/SiON-passivated structure. The lifetime variation of the Al2O3/SiON stack layer was found to depend on both the plasma power and the deposition temperature during the PECVD SiON process and to show better thermal stability than the Al2O3/SiNx:H stack under the same deposition conditions. The lifetime after a high-temperature firing process was improved dramatically at the PECVD deposition temperature of 200 °C. Our results provide a significant clue to reason for the improvement of the passivation performance for passivated emitter and rear contact (PERC) silicon solar cells.

  5. On the Structural and Chemical Characteristics of Co/Al2O3/graphene Interfaces for Graphene Spintronic Devices.

    PubMed

    Canto, Bárbara; Gouvea, Cristol P; Archanjo, Bráulio S; Schmidt, João E; Baptista, Daniel L

    2015-09-23

    We report a detailed investigation of the structural and chemical characteristics of thin evaporated Al2O3 tunnel barriers of variable thickness grown onto single-layer graphene sheets. Advanced electron microscopy and spectrum-imaging techniques were used to investigate the Co/Al2O3/graphene/SiO2 interfaces. Direct observation of pinhole contacts was achieved using FIB cross-sectional lamellas. Spatially resolved EDX spectrum profiles confirmed the presence of direct point contacts between the Co layer and the graphene. The high surface diffusion properties of graphene led to cluster-like Al2O3 film growth, limiting the minimal possible thickness for complete barrier coverage onto graphene surfaces using standard Al evaporation methods. The results indicate a minimum thickness of nominally 3 nm Al2O3, resulting in a 0.6 nm rms rough film with a maximum thickness reaching 5 nm.

  6. Effects of macro- and micro-hole milling parameters on Al2O3 ceramics using an ultraviolet laser system

    NASA Astrophysics Data System (ADS)

    Hsiao, W. T.; Tseng, S. F.; Chung, C. K.; Huang, K. C.; Chen, M. F.

    2013-06-01

    Ceramics are commonly used as substrates in electrically insulated integrated circuit, printed circuit board, and lightemitting diode industries because of their excellent dielectric and thermal properties. However, brittle materials (e.q., ceramic alumina, sapphire, glass, and silicon wafer) are difficult to fabricate using wheel tools. Laser material processes are preferred over traditional methods because they allow noncontact processing, avoid tool wear problems, and achieve high speed, high accuracy, and high resolution. Laser material processes also exhibit minimal residual thermal effects and residual stress. This study investigated the laser drilling of Al2O3 ceramic material (with a thickness of 380 μm and hole diameters of 200, 300, and 500 μm, respectively) by using a laser milling method. The macro- and micro-hole milling performance depended on various parameters including the galvanometric scan speed and milling time. A 3D confocal laser scanning microscope and a field-emission scanning electron microscope were used to measure the surface morphology, taper angle, and melted residual height of the machined surface after laser milling. The edge quality and roundness of laser milling were also observed using image-processing edge-detection technology.

  7. Improved Gate Dielectric Deposition and Enhanced Electrical Stability for Single-Layer MoS2 MOSFET with an AlN Interfacial Layer

    NASA Astrophysics Data System (ADS)

    Qian, Qingkai; Li, Baikui; Hua, Mengyuan; Zhang, Zhaofu; Lan, Feifei; Xu, Yongkuan; Yan, Ruyue; Chen, Kevin J.

    2016-06-01

    Transistors based on MoS2 and other TMDs have been widely studied. The dangling-bond free surface of MoS2 has made the deposition of high-quality high-k dielectrics on MoS2 a challenge. The resulted transistors often suffer from the threshold voltage instability induced by the high density traps near MoS2/dielectric interface or inside the gate dielectric, which is detrimental for the practical applications of MoS2 metal-oxide-semiconductor field-effect transistor (MOSFET). In this work, by using AlN deposited by plasma enhanced atomic layer deposition (PEALD) as an interfacial layer, top-gate dielectrics as thin as 6 nm for single-layer MoS2 transistors are demonstrated. The AlN interfacial layer not only promotes the conformal deposition of high-quality Al2O3 on the dangling-bond free MoS2, but also greatly enhances the electrical stability of the MoS2 transistors. Very small hysteresis (ΔVth) is observed even at large gate biases and high temperatures. The transistor also exhibits a low level of flicker noise, which clearly originates from the Hooge mobility fluctuation instead of the carrier number fluctuation. The observed superior electrical stability of MoS2 transistor is attributed to the low border trap density of the AlN interfacial layer, as well as the small gate leakage and high dielectric strength of AlN/Al2O3 dielectric stack.

  8. Improved Gate Dielectric Deposition and Enhanced Electrical Stability for Single-Layer MoS2 MOSFET with an AlN Interfacial Layer

    PubMed Central

    Qian, Qingkai; Li, Baikui; Hua, Mengyuan; Zhang, Zhaofu; Lan, Feifei; Xu, Yongkuan; Yan, Ruyue; Chen, Kevin J.

    2016-01-01

    Transistors based on MoS2 and other TMDs have been widely studied. The dangling-bond free surface of MoS2 has made the deposition of high-quality high-k dielectrics on MoS2 a challenge. The resulted transistors often suffer from the threshold voltage instability induced by the high density traps near MoS2/dielectric interface or inside the gate dielectric, which is detrimental for the practical applications of MoS2 metal-oxide-semiconductor field-effect transistor (MOSFET). In this work, by using AlN deposited by plasma enhanced atomic layer deposition (PEALD) as an interfacial layer, top-gate dielectrics as thin as 6 nm for single-layer MoS2 transistors are demonstrated. The AlN interfacial layer not only promotes the conformal deposition of high-quality Al2O3 on the dangling-bond free MoS2, but also greatly enhances the electrical stability of the MoS2 transistors. Very small hysteresis (ΔVth) is observed even at large gate biases and high temperatures. The transistor also exhibits a low level of flicker noise, which clearly originates from the Hooge mobility fluctuation instead of the carrier number fluctuation. The observed superior electrical stability of MoS2 transistor is attributed to the low border trap density of the AlN interfacial layer, as well as the small gate leakage and high dielectric strength of AlN/Al2O3 dielectric stack. PMID:27279454

  9. Improved Gate Dielectric Deposition and Enhanced Electrical Stability for Single-Layer MoS2 MOSFET with an AlN Interfacial Layer.

    PubMed

    Qian, Qingkai; Li, Baikui; Hua, Mengyuan; Zhang, Zhaofu; Lan, Feifei; Xu, Yongkuan; Yan, Ruyue; Chen, Kevin J

    2016-01-01

    Transistors based on MoS2 and other TMDs have been widely studied. The dangling-bond free surface of MoS2 has made the deposition of high-quality high-k dielectrics on MoS2 a challenge. The resulted transistors often suffer from the threshold voltage instability induced by the high density traps near MoS2/dielectric interface or inside the gate dielectric, which is detrimental for the practical applications of MoS2 metal-oxide-semiconductor field-effect transistor (MOSFET). In this work, by using AlN deposited by plasma enhanced atomic layer deposition (PEALD) as an interfacial layer, top-gate dielectrics as thin as 6 nm for single-layer MoS2 transistors are demonstrated. The AlN interfacial layer not only promotes the conformal deposition of high-quality Al2O3 on the dangling-bond free MoS2, but also greatly enhances the electrical stability of the MoS2 transistors. Very small hysteresis (ΔVth) is observed even at large gate biases and high temperatures. The transistor also exhibits a low level of flicker noise, which clearly originates from the Hooge mobility fluctuation instead of the carrier number fluctuation. The observed superior electrical stability of MoS2 transistor is attributed to the low border trap density of the AlN interfacial layer, as well as the small gate leakage and high dielectric strength of AlN/Al2O3 dielectric stack.

  10. Improved Gate Dielectric Deposition and Enhanced Electrical Stability for Single-Layer MoS2 MOSFET with an AlN Interfacial Layer.

    PubMed

    Qian, Qingkai; Li, Baikui; Hua, Mengyuan; Zhang, Zhaofu; Lan, Feifei; Xu, Yongkuan; Yan, Ruyue; Chen, Kevin J

    2016-01-01

    Transistors based on MoS2 and other TMDs have been widely studied. The dangling-bond free surface of MoS2 has made the deposition of high-quality high-k dielectrics on MoS2 a challenge. The resulted transistors often suffer from the threshold voltage instability induced by the high density traps near MoS2/dielectric interface or inside the gate dielectric, which is detrimental for the practical applications of MoS2 metal-oxide-semiconductor field-effect transistor (MOSFET). In this work, by using AlN deposited by plasma enhanced atomic layer deposition (PEALD) as an interfacial layer, top-gate dielectrics as thin as 6 nm for single-layer MoS2 transistors are demonstrated. The AlN interfacial layer not only promotes the conformal deposition of high-quality Al2O3 on the dangling-bond free MoS2, but also greatly enhances the electrical stability of the MoS2 transistors. Very small hysteresis (ΔVth) is observed even at large gate biases and high temperatures. The transistor also exhibits a low level of flicker noise, which clearly originates from the Hooge mobility fluctuation instead of the carrier number fluctuation. The observed superior electrical stability of MoS2 transistor is attributed to the low border trap density of the AlN interfacial layer, as well as the small gate leakage and high dielectric strength of AlN/Al2O3 dielectric stack. PMID:27279454

  11. Improvement of the GaSb/Al2O3 interface using a thin InAs surface layer

    NASA Astrophysics Data System (ADS)

    Greene, Andrew; Madisetti, Shailesh; Nagaiah, Padmaja; Yakimov, Michael; Tokranov, Vadim; Moore, Richard; Oktyabrsky, Serge

    2012-12-01

    The highly reactive GaSb surface was passivated with a thin InAs layer to limit interface trap state density (Dit) at the III-V/high-k oxide interface. This InAs surface was subjected to various cleaning processes to effectively reduce native oxides before atomic layer deposition (ALD). Ammonium sulfide pre-cleaning and trimethylaluminum/water ALD were used in conjunction to provide a clean interface and annealing in forming gas (FG) at 350 °C resulted in an optimized fabrication for n-GaSb/InAs/high-k gate stacks. Interface trap density, Dit ≈ 2-3 × 1012 cm-2eV-1 resided near the n-GaSb conductance band which was extracted and compared with three different methods. Conductance-voltage-frequency plots showed efficient Fermi level movement and a sub-threshold slope of 200 mV/dec. A composite high-k oxide process was also developed using ALD of Al2O3 and HfO2 resulting in a Dit ≈ 6-7 × 1012 cm-2eV-1. Subjecting these samples to a higher (450 °C) processing temperature results in increased oxidation and a thermally unstable interface. p-GaSb displayed very fast minority carrier generation/recombination likely due to a high density of bulk traps in GaSb.

  12. On the Control of the Fixed Charge Densities in Al2O3-Based Silicon Surface Passivation Schemes.

    PubMed

    Simon, Daniel K; Jordan, Paul M; Mikolajick, Thomas; Dirnstorfer, Ingo

    2015-12-30

    A controlled field-effect passivation by a well-defined density of fixed charges is crucial for modern solar cell surface passivation schemes. Al2O3 nanolayers grown by atomic layer deposition contain negative fixed charges. Electrical measurements on slant-etched layers reveal that these charges are located within a 1 nm distance to the interface with the Si substrate. When inserting additional interface layers, the fixed charge density can be continuously adjusted from 3.5 × 10(12) cm(-2) (negative polarity) to 0.0 and up to 4.0 × 10(12) cm(-2) (positive polarity). A HfO2 interface layer of one or more monolayers reduces the negative fixed charges in Al2O3 to zero. The role of HfO2 is described as an inert spacer controlling the distance between Al2O3 and the Si substrate. It is suggested that this spacer alters the nonstoichiometric initial Al2O3 growth regime, which is responsible for the charge formation. On the basis of this charge-free HfO2/Al2O3 stack, negative or positive fixed charges can be formed by introducing additional thin Al2O3 or SiO2 layers between the Si substrate and this HfO2/Al2O3 capping layer. All stacks provide very good passivation of the silicon surface. The measured effective carrier lifetimes are between 1 and 30 ms. This charge control in Al2O3 nanolayers allows the construction of zero-fixed-charge passivation layers as well as layers with tailored fixed charge densities for future solar cell concepts and other field-effect based devices.

  13. Al2O3 e-Beam Evaporated onto Silicon (100)/SiO2, by XPS

    SciTech Connect

    Madaan, Nitesh; Kanyal, Supriya S.; Jensen, David S.; Vail, Michael A.; Dadson, Andrew; Engelhard, Mark H.; Samha, Hussein; Linford, Matthew R.

    2013-09-25

    We report the XPS characterization of a thin film of Al2O3 (35 nm) deposited via e-beam evaporation onto silicon (100). The film was characterized with monochromatic Al Ka radiation. An XPS survey scan, an Al 2p narrow scan, and the valence band spectrum were collected. The Al2O3 thin film is used as a diffusion barrier layer for templated carbon nanotube (CNT) growth in the preparation of microfabricated thin layer chromatography plates.

  14. Influence of the Al2O3 partial-monolayer number on the crystallization mechanism of TiO2 in ALD TiO2/Al2O3 nanolaminates and its impact on the material properties

    NASA Astrophysics Data System (ADS)

    Testoni, G. E.; Chiappim, W.; Pessoa, R. S.; Fraga, M. A.; Miyakawa, W.; Sakane, K. K.; Galvão, N. K. A. M.; Vieira, L.; Maciel, H. S.

    2016-09-01

    TiO2/Al2O3 nanolaminates are being investigated to obtain unique materials with chemical, physical, optical, electrical and mechanical properties for a broad range of applications that include electronic and energy storage devices. Here, we discuss the properties of TiO2/Al2O3 nanolaminate structures constructed on silicon (1 0 0) and glass substrates using atomic layer deposition (ALD) by alternatively depositing a TiO2 sublayer and Al2O3 partial-monolayer using TTIP–H2O and TMA–H2O precursors, respectively. The Al2O3 is formed by a single TMA–H2O cycle, so it is a partial-monolayer because of steric hindrance of the precursors, while the TiO2 sublayer is formed by several TTIP–H2O cycles. Overall, each nanolaminate incorporates a certain number of Al2O3 partial-monolayers with this number varying from 10–90 in the TiO2/Al2O3 nanolaminate grown during 2700 total reaction cycles of TiO2 at a temperature of 250 °C. The fundamental properties of the TiO2/Al2O3 nanolaminates, namely film thickness, chemical composition, microstructure and morphology were examined in order to better understand the influence of the number of Al2O3 partial-monolayers on the crystallization mechanism of TiO2. In addition, some optical, electrical and mechanical properties were determined and correlated with fundamental characteristics. The results show clearly the effect of Al2O3 partial-monolayers as an internal barrier, which promotes structural inhomogeneity in the film and influences the fundamental properties of the nanolaminate. These properties are correlated with gas phase analysis that evidenced the poisoning effect of trimethylaluminum (TMA) pulse during the TiO2 layer growth, perturbing the growth per cycle and consequently the overall film thickness. It was shown that the changes in the fundamental properties of TiO2/Al2O3 nanolaminates had little influence on optical properties such as band gap and transmittance. However, in contrast, electrical properties as

  15. Influence of the Al2O3 partial-monolayer number on the crystallization mechanism of TiO2 in ALD TiO2/Al2O3 nanolaminates and its impact on the material properties

    NASA Astrophysics Data System (ADS)

    Testoni, G. E.; Chiappim, W.; Pessoa, R. S.; Fraga, M. A.; Miyakawa, W.; Sakane, K. K.; Galvão, N. K. A. M.; Vieira, L.; Maciel, H. S.

    2016-09-01

    TiO2/Al2O3 nanolaminates are being investigated to obtain unique materials with chemical, physical, optical, electrical and mechanical properties for a broad range of applications that include electronic and energy storage devices. Here, we discuss the properties of TiO2/Al2O3 nanolaminate structures constructed on silicon (1 0 0) and glass substrates using atomic layer deposition (ALD) by alternatively depositing a TiO2 sublayer and Al2O3 partial-monolayer using TTIP-H2O and TMA-H2O precursors, respectively. The Al2O3 is formed by a single TMA-H2O cycle, so it is a partial-monolayer because of steric hindrance of the precursors, while the TiO2 sublayer is formed by several TTIP-H2O cycles. Overall, each nanolaminate incorporates a certain number of Al2O3 partial-monolayers with this number varying from 10-90 in the TiO2/Al2O3 nanolaminate grown during 2700 total reaction cycles of TiO2 at a temperature of 250 °C. The fundamental properties of the TiO2/Al2O3 nanolaminates, namely film thickness, chemical composition, microstructure and morphology were examined in order to better understand the influence of the number of Al2O3 partial-monolayers on the crystallization mechanism of TiO2. In addition, some optical, electrical and mechanical properties were determined and correlated with fundamental characteristics. The results show clearly the effect of Al2O3 partial-monolayers as an internal barrier, which promotes structural inhomogeneity in the film and influences the fundamental properties of the nanolaminate. These properties are correlated with gas phase analysis that evidenced the poisoning effect of trimethylaluminum (TMA) pulse during the TiO2 layer growth, perturbing the growth per cycle and consequently the overall film thickness. It was shown that the changes in the fundamental properties of TiO2/Al2O3 nanolaminates had little influence on optical properties such as band gap and transmittance. However, in contrast, electrical properties as resistivity

  16. Electroless Ni-P-PTFE-Al2O3 Dispersion Nanocomposite Coating for Corrosion and Wear Resistance

    NASA Astrophysics Data System (ADS)

    Sharma, Ankita; Singh, A. K.

    2014-01-01

    With the aim to produce a coating having good corrosion and wear resistance alongside hardness but lesser friction coefficient, Ni-P-PTFE-Al2O3 (NiPPA) dispersion coating was developed. This was achieved by introducing nanosized polytetrafluoroethylene (PTFE) and alumina (Al2O3) in the Ni-P matrix deposited on mild steel substrate. The coating was characterized using scanning electron microscopy, energy dispersive analysis of x-ray, and x-ray diffractrometry. Microhardness and wear resistance of the coating was measured using Vicker's hardness tester and Pin-on-Disc method, respectively. The corrosion behavior was measured using electrochemical polarization and immersion tests with and without exposure in 3.5% NaCl solution. It is observed that codeposition of Al2O3 and PTFE particles with Ni-P coating results in comparatively smooth surface with nodular grains. The NiPPA coating was observed to have moderate hardness between electroless Ni-P-PTFE and Ni-P-Al2O3 coating and good wear resistance with lubricating effect. Addition of both PTFE and Al2O3 is observed to enhance corrosion resistance of the Ni-P coating. However, improvement in corrosion resistance is more due to addition of Al2O3 than PTFE. Continuous exposure for 10-20 days in corrosive solution is found to deteriorate corrosion protection properties of the coating.

  17. Effect of Surface Treatment on Shear Bond Strength between Resin Cement and Ce-TZP/Al2O3

    PubMed Central

    Kim, Jong-Eun; Kim, Jee-Hwan; Shim, June-Sung; Roh, Byoung-Duck

    2016-01-01

    Purpose. Although several studies evaluating the mechanical properties of Ce-TZP/Al2O3 have been published, to date, no study has been published investigating the bonding protocol between Ce-TZP/Al2O3 and resin cement. The aim of this study was to evaluate the shear bond strength to air-abraded Ce-TZP/Al2O3 when primers and two different cement types were used. Materials and Methods. Two types of zirconia (Y-TZP and Ce-TZP/Al2O3) specimens were further divided into four subgroups according to primer application and the cement used. Shear bond strength was measured after water storage for 3 days or 5,000 times thermocycling for artificial aging. Results. The Y-TZP block showed significantly higher shear bond strength than the Ce-TZP/Al2O3 block generally. Primer application promoted high bond strength and less effect on bond strength reduction after thermocycling, regardless of the type of cement, zirconia block, or aging time. Conclusions. Depending on the type of the primer or resin cement used after air-abrasion, different wettability of the zirconia surface can be observed. Application of primer affected the values of shear bond strength after the thermocycling procedure. In the case of using the same bonding protocol, Y-TZP could obtain significantly higher bond strength compared with Ce-TZP/Al2O3. PMID:27382569

  18. Formation of Al2O3-graphite core shells versus growth time by using thermal chemical vapor deposition

    NASA Astrophysics Data System (ADS)

    Kim, Chang-duk; Park, Chinho

    2016-09-01

    Al2O3-graphite core shells were synthesized on Al2O3 nanopowders by using a thermal chemical vapor deposition technique with C2H2, H2, and Ar gases, and the effects of the growth time on the formation of the core shells were investigated. The crystalline quality of the Al2O3-graphite core shells increased with increasing growth time. The C-Al chemical bonding at 283 eV was confirmed by using X-ray photoelectron spectroscopy (XPS), and thus the thin Al layers on Al2O3 cores, which formed through a reduction process, played an important role in the fabrication of the graphene shells. The characteristics of an electrode composed of Al2O3-graphite core-shell ink on a glass substrate were investigated. This study demonstrated a very effective and simple method for the synthesis of Al2O3-graphite core shells, and the technique developed in this study may be applicable to the synthesis of various metal-graphite core shells.

  19. Terahertz dynamics of spins and charges in CoFe /Al2O3 multilayers

    NASA Astrophysics Data System (ADS)

    Costa, J. D.; Huisman, T. J.; Mikhaylovskiy, R. V.; Razdolski, I.; Ventura, J.; Teixeira, J. M.; Schmool, D. S.; Kakazei, G. N.; Cardoso, S.; Freitas, P. P.; Rasing, Th.; Kimel, A. V.

    2015-03-01

    The ultrafast laser-induced response of spins and charges in CoFe /Al2O3 multilayers are studied using THz and optical pump-probe spectroscopies. We demonstrate the possibility of ultrafast manipulation of the transport and magnetic properties of the multilayers with femtosecond laser excitation. In particular, using time-resolved THz transmission experiments we found that such an excitation leads to a rapid increase of the THz transmission (i.e., electric resistivity). Our experiments also reveal that femtosecond laser excitation results in the emission of broadband THz radiation. To reveal the origin of the emitted THz radiation, we performed magnetic-dependent measurements of the THz emission. We also compared the observed electric field of the THz radiation to calculations performed using subpicosecond laser-induced demagnetization measurements. The good agreement between the experimentally obtained spectra and the calculations corroborates that the measured THz emission originates from the demagnetization process.

  20. Structural and magnetic properties of Co68Fe24Zr8/Al2O3 multilayers

    NASA Astrophysics Data System (ADS)

    Lidbaum, Hans; Raanaei, Hossein; Papaioannou, Evangelos Th.; Leifer, Klaus; Hjörvarsson, Björgvin

    2010-02-01

    The structural and magnetic properties of Co68Fe24Zr8/Al2O3 multilayers grown by using magnetron sputtering were investigated with X-ray reflectivity, transmission electron microscopy and magneto-optical Kerr effect. The Co68Fe24Zr8 form amorphous islands when the nominal thickness of the Co68Fe24Zr8 layers is 10 Å, exhibiting an isotropic superparamagnetic behavior. Continuous layers with mostly a nano-crystalline structure are instead formed when the nominal thickness of the Co68Fe24Zr8 layers is increased to 20 Å. The continuous layers exhibit random, in-plane, magnetic anisotropy resulting from the growth process. However, induced uniaxial anisotropy is obtained when growing the sample in the presence of an applied magnetic field, regardless of the combination of amorphous and nano-crystalline material.

  1. Impedance analysis of Al2O3/H-terminated diamond metal-oxide-semiconductor structures

    NASA Astrophysics Data System (ADS)

    Liao, Meiyong; Liu, Jiangwei; Sang, Liwen; Coathup, David; Li, Jiangling; Imura, Masataka; Koide, Yasuo; Ye, Haitao

    2015-02-01

    Impedance spectroscopy (IS) analysis is carried out to investigate the electrical properties of the metal-oxide-semiconductor (MOS) structure fabricated on hydrogen-terminated single crystal diamond. The low-temperature atomic layer deposition Al2O3 is employed as the insulator in the MOS structure. By numerically analysing the impedance of the MOS structure at various biases, the equivalent circuit of the diamond MOS structure is derived, which is composed of two parallel capacitive and resistance pairs, in series connection with both resistance and inductance. The two capacitive components are resulted from the insulator, the hydrogenated-diamond surface, and their interface. The physical parameters such as the insulator capacitance are obtained, circumventing the series resistance and inductance effect. By comparing the IS and capacitance-voltage measurements, the frequency dispersion of the capacitance-voltage characteristic is discussed.

  2. Synthesis and characterization of Al-Zn/Al2O3 nano-powder composites.

    PubMed

    Durai, T G; Das, Karabi; Das, Siddhartha

    2007-06-01

    Composites consisting of Al-Zn/Al2O3 have been synthesized using high energy mechanical milling. High energy ball milling increases the sintering rate of the composite powder due to increased diffusion rate. Owing to the finer microstructure, the hardness of the sintered composite produced by using the mechanically milled nanocomposite powder is significantly higher than that of the sintered composite produced by using the as-mixed powder. The mean crystallite size of the matrix has been determined to be 27 nm by Scherrer equation using X-ray diffraction data. The powders have been characterized by X-ray diffraction (XRD), transmission electron microscopy (TEM), and differential thermal analysis (DTA). The effect of high-energy ball milling and subsequent annealing on a mixture of Al and ZnO has also been investigated. DTA result show that the reaction temperature of Al-ZnO decreases with the increase in the ball milling time.

  3. Directed photoluminescent emission of ZnO tetrapods on biotemplated Al2O3

    NASA Astrophysics Data System (ADS)

    Rambo, Carlos R.; Hotza, Dachamir; Cunha, Carlo R. da; Zollfrank, Cordt

    2013-12-01

    In this work biomorphic Al2O3 with microcellular morphology was produced by biotemplating of rattan and coating with ZnO tetrapods (T-ZnO). The morphological features of the biomorphic ceramics were evaluated, as well as the photoluminescent properties of the final device. The T-ZnO-coated microvessels of rattan metaxylem acted as structural guides for the directional travel of light. Therefore, the intensity of the green emission was controlled through orientation of the device with respect to the microvessels axis. Microcellular ceramics coated with functional materials such as ZnO can be used to design novel optoelectronic sensing devices in applications that require control of the emitted luminescence signal.

  4. CoFe2/Al2O3/PMNPT multiferroic heterostructures by atomic layer deposition

    NASA Astrophysics Data System (ADS)

    Zhou, Ziyao; Grocke, Garrett; Yanguas-Gil, Angel; Wang, Xinjun; Gao, Yuan; Sun, Nianxiang; Howe, Brandon; Chen, Xing

    2016-05-01

    Multiferroic materials and applications allow electric bias control of magnetism or magnetic bias control of polarization, enabling fast, compact, energy-efficient devices in RF/microwave communication systems such as filters, shifters, and antennas; electronics devices such as inductors and capacitors; and other magnetic material related applications including sensors and memories. In this manuscript, we utilize atomic layer deposition technology to grow magnetic CoFe metallic thin films onto PMNPT, with a ˜110 Oe electric field induced ferromagnetic resonance field shift in the CoFe/Al2O3/PMNPT multiferroic heterostructure. Our work demonstrates an atomic layer deposition fabricated multiferroic heterostructure with significant tunability and shows that the unique thin film growth mechanism will benefit integrated multiferroic application in near future.

  5. Synthesis and characterisation of YSZ-Al2O3 nanostructured materials.

    PubMed

    Santoyo-Salazar, J; González, G; Schabes-Retchkiman, P S; Ascencio, J A; Tartaj-Salvador, J; Chávez-Carvayar, J A

    2006-07-01

    In this work a co-precipitation route was used to synthesise two yttria-stabilised-zirconia (YSZ) phases with different concentrations of alumina (Al2O3). A tetragonal, with 3 mol% yttria, and a cubic, with 8 mol% yttria, phases were added with alumina in different weight proportions, 90/10, 80/20, 70/30, and 60/40, respectively. After synthesised, products were sintered in a range 800-1100 degrees C for different intervals of time. Compounds were characterised by X-ray diffraction, transmission electron microscopy (TEM), high resolution transmission electron microscopy (HRTEM), scanning electron microscopy (SEM), and atomic force microscopy (AFM). Rietveld refinements, using FULPROF-Suite software, were carried out to obtain the cell parameters and structural characterisation of products.

  6. Novel Al2O3:C,Mg fluorescent nuclear track detectors for passive neutron dosimetry.

    PubMed

    Sykora, G Jeff; Akselrod, Mark S; Salasky, M; Marino, Stephen A

    2007-01-01

    The latest advances in the development of a fluorescent nuclear track detector (FNTD) for neutron and heavy charged particle dosimetry are described and compared with CR-39 plastic nuclear etched track detectors (PNTDs). The technique combines a new luminescent aluminium oxide single crystal detector (Al(2)O(3):C,Mg) with an imaging technique based on laser scanning and confocal fluorescence detection. Detection efficiency was obtained after irradiations with monoenergetic neutron and proton beams. Dose dependences were measured for different configurations of the detectors exposed in fast- and thermal-neutron fields. A specially developed image processing technique allows for fast fluorescent track identification and counting. The readout method is non-destructive, and detectors can be reused after thermal annealing. PMID:17522030

  7. Synthesis and study on pore structure of SiO2/Al2O3 aerogel

    NASA Astrophysics Data System (ADS)

    Bakina, O. V.; Glazkova, E. A.; Svarovskaya, N. V.; Lozhkomoev, A. S.; Lerner, M. I.; Petrova, T. M.; Ponomarev, Y. N.; Solodov, A. A.; Solodov, A. M.

    2015-10-01

    In the current paper, the mixed SiO2/Al2O3 aerogel was synthesized by sol-gel method with subcritical drying and characterized. Tetraethoxysilane was used as a precursor of silicon sol. The flower-shaped alumina suspension was peptized to produce alumina sol. The aerogel texture, morphology, and structure were determined using scanning electron microscopy, X-ray diffraction, low-temperature nitrogen adsorption, and high-resolution spectroscopy. A special attention was paid to the pore structure of aerogel, and aerogel framework was formed by the spherical agglomerates containing spherical particles of silicon oxide and alumina nanopetals. The pore size distribution was bimodal with peaks of 5.5 nm and 77 nm.

  8. Angle-Dependent Microresonator ESR Characterization of Locally Doped Gd3 + :Al2O3

    NASA Astrophysics Data System (ADS)

    Wisby, I. S.; de Graaf, S. E.; Gwilliam, R.; Adamyan, A.; Kubatkin, S. E.; Meeson, P. J.; Tzalenchuk, A. Ya.; Lindström, T.

    2016-08-01

    Interfacing rare-earth-doped crystals with superconducting circuit architectures provides an attractive platform for quantum memory and transducer devices. Here, we present the detailed characterization of such a hybrid system: a locally implanted rare-earth Gd3 + in Al2O3 spin system coupled to a superconducting microresonator. We investigate the properties of the implanted spin system through angular-dependent microresonator electron spin resonance (micro-ESR) spectroscopy. We find, despite the high-energy near-surface implantation, the resulting micro-ESR spectra to be in excellent agreement with the modeled Hamiltonian, supporting the integration of dopant ions into their relevant lattice sites while maintaining crystalline symmetries. Furthermore, we observe clear contributions from individual microwave field components of our microresonator, emphasizing the need for controllable local implantation.

  9. Wear Resistance of Aluminum Matrix Composites Reinforced with Al2O3 Particles After Multiple Remelting

    NASA Astrophysics Data System (ADS)

    Klasik, Adam; Pietrzak, Krystyna; Makowska, Katarzyna; Sobczak, Jerzy; Rudnik, Dariusz; Wojciechowski, Andrzej

    2016-08-01

    Based on previous results, the commercial composites of A359 (AlSi9Mg) alloy reinforced with 22 vol.% Al2O3 particles were submitted to multiple remelting by means of gravity casting and squeeze-casting procedures. The studies were focused on tribological tests, x-ray phase analyses, and microstructural examinations. More promising results were obtained for squeeze-casting method mainly because of the reduction of the negative microstructural effects such as shrinkage porosity or other microstructural defects and discontinuities. The results showed that direct remelting may be treated as economically well-founded and alternative way compared to other recycling processes. It was underlined that the multiple remelting method must be analyzed for any material separately.

  10. Kinetics of F center annealing and colloid formation in Al2O3

    NASA Astrophysics Data System (ADS)

    Kotomin, E. A.; Kuzovkov, V. N.; Popov, A. I.; Vila, R.

    2016-05-01

    The diffusion-controlled kinetics of the F center annealing in Al2O3 (sapphire, corundum) is simulated theoretically for the two regimes: after neutron irradiation when the immobile F centers are annihilated with complementary defects - mobile interstitial oxygen ions, and in thermochemically reduced (additively colored) crystals where mobile F centers aggregate and create the metal colloids. A comparison of the experimental and theoretical kinetics allowed us to estimate the migration energies for the F centers and interstitial oxygen ions. It is obtained that the pre-exponents in diffusion coefficients for defects in different neutron irradiated samples can vary by two orders of magnitude which is attributed by presence of numerous traps for mobile interstitial oxygen ions.

  11. ATOMIC AND MOLECULAR PHYSICS: Guided transmission of oxygen ions through Al2O3 nanocapillaries

    NASA Astrophysics Data System (ADS)

    Chen, Yi-Feng; Chen, Xi-Meng; Lou, Feng-Jun; Xu, Jin-Zhang; Shao, Jian-Xiong; Sun, Guang-Zhi; Wang, Jun; Xi, Fa-Yuan; Yin, Young-Zhi; Wang, Xing-An; Xu, Jun-Kui; Cui, Ying; Ding, Bao-Wei

    2009-07-01

    The transmissions of oxygen ions through Al2O3 nanocapillaries each 50 nm in diameter and 10 μm in length at a series of different tilt angles are measured, where the ions with energies ranging from 10 to 60 keV and charge states from 1 up to 6 are involved. The angular distribution and the transmission yields of transported ions are investigated. Our results indicate both the existence of a guiding effect when ions pass through the capillary and a significant dependence of the ion transmission on the energy and the charge state of the ions. The guiding effects are observed to be enhanced at lower projectile energies and higher charge states. Meanwhile, the results also exhibit that the transmission yields increase as the tilt angle decreases at a given energy and charge state.

  12. Oxygen diffusion in alpha-Al2O3. Ph.D. Thesis

    NASA Technical Reports Server (NTRS)

    Cawley, J. D.; Halloran, J. W.; Cooper, A. R.

    1984-01-01

    Oxygen self diffusion coefficients were determined in single crystal alpha-Al2O3 using the gas exchange technique. The samples were semi-infinite slabs cut from five different boules with varying background impurities. The diffusion direction was parallel to the c-axis. The tracer profiles were determined by two techniques, single spectrum proton activation and secondary ion mass spectrometry. The SIMS proved to be a more useful tool. The determined diffusion coefficients, which were insensitive to impurity levels and oxygen partial pressure, could be described by D = .00151 exp (-572kJ/RT) sq m/s. The insensitivities are discussed in terms of point defect clustering. Two independent models are consistent with the findings, the first considers the clusters as immobile point defect traps which buffer changes in the defect chemistry. The second considers clusters to be mobile and oxygen diffusion to be intrinsic behavior, the mechanism for oxygen transport involving neutral clusters of Schottky quintuplets.

  13. CVD Fiber Coatings for Al2O3/NiAl Composites

    NASA Technical Reports Server (NTRS)

    Boss, Daniel E.

    1995-01-01

    While sapphire-fiber-reinforced nickel aluminide (Al2O3/NiAl) composites are an attractive candidate for high-temperature structures, the significant difference in the coefficient of thermal expansion between the NiAl matrix and the sapphire fiber creates substantial residual stresses in the composite. This study seeks to produce two fiber-coating systems with the potential to reduce the residual stresses in the sapphire/NiAl composite system. Chemical vapor deposition (CVD) was used to produce both the compensating and compliant-fiber coatings for use in sapphire/NiAl composites. A special reactor was designed and built to produce the FGM and to handle the toxic nickel precursors. This process was successfully used to produce 500-foot lengths of fiber with coating thicknesses of approximately 3 microns, 5 microns, and 10 microns.

  14. Fabrication and properties of functionally graded NiAl/Al2O3 composites

    NASA Technical Reports Server (NTRS)

    Miller, D. P.; Lannutti, J. J.; Noebe, R. D.

    1993-01-01

    A modified sedimentation process was used in the production of a functionally gradient material (FGM), NiAl/Al2O3. A simple finite element model was used to guide our design and fabrication efforts by estimating residual stress states as a function of composite structure. This approach could lead to tailored designs that enhance or avoid specific residual stress states. Thermal cycling tests were factored into the model to predict time dependent or steady-state internal temperature and stress profiles. Four-point bend tests were conducted to establish the mechanical load-displacement behavior of a single interlayer FGM at room temperature, 800 and 1000 K. Room temperature bend strength of the FGM was 3-4 times that of the base NiAl. At elevated temperatures, composite fracture occurred in a gradual, noncatastrophic mode involving NiAl retardation of a succession of cracks originating in the alumina face.

  15. Tribological properties of thermally sprayed TiAl-Al2O3 composite coating

    NASA Astrophysics Data System (ADS)

    Salman, A.; Gabbitas, B.; Li, J.; Zhang, D.

    2009-08-01

    The use of thermal spray coatings provides protection to the surfaces operating in severe environments. The main goal of the current work is to investigate the possibility of using a high velocity oxy fuel (HVOF) thermally sprayed wear resistant TiAl/Al2O3 coating on tool steel (H13) which is used for making dies for aluminium high pressure die casting. A feedstock of TiAl/Al2O3 composite powder was produced from a mixture of Al and TiO2 powders by high energy mechanical milling, followed by a thermal reaction process. The feedstock was then thermally sprayed using a high velocity oxy-fuel (HVOF) technique onto H13 steel substrates to produce a composite coating. The present study describes and compares the tribological properties such as friction and sliding wear rate of the coating both at room and high temperature (700°C). The results showed that the composite coating has lower wear rate at high temperature (700°C) than the uncoated H13 sample. At Room temperature without using lubricant there is no much significant difference between the wear rate of the coated and uncoated samples. The experimental results showed that the composite coating has great potential for high temperature application due to its lower wear rate at high temperature in comparison with the uncoated sample at the same temperature. The composite coating was characterized using scanning electron microscopy (SEM), optical microscopy and X-ray diffractometry (XRD). This paper reports the experimental observations and discusses the wear resistance performance of the coatings at room and high temperatures.

  16. Latent tracks and associated strain in Al2O3 irradiated with swift heavy ions

    NASA Astrophysics Data System (ADS)

    O'Connell, J. H.; Rymzhanov, R. A.; Skuratov, V. A.; Volkov, A. E.; Kirilkin, N. S.

    2016-05-01

    The morphology of latent ion tracks induced by high energy heavy ions in Al2O3 was investigated using a combination of high resolution transmission electron microscopy (HRTEM), exit wave reconstruction, geometric phase analysis and numerical simulations. Single crystal α-Al2O3 crystals were irradiated with 167 MeV Xe ions along the c-axis to fluences between 1 × 1010 and 1 × 1013 cm-2. Planar TEM lamella were prepared by focused ion beam (FIB) and geometrical phase analysis was performed on the phase image of the reconstructed complex electron wave at the specimen exit surface in order to estimate the latent strain around individual track cores. In addition to the experimental data, the material excitation in a SHI track was numerically simulated by combining Monte-Carlo code, describing the excitation of the electronic subsystem, with classical molecular dynamics of the lattice atoms. Experimental and simulation data both showed that the relaxation of the excess lattice energy results in the formation of a cylinder-like disordered region of about 4 nm in diameter consisting of an underdense core surrounded by an overdense shell. Modeling of the passage of a second ion in the vicinity of this disordered region revealed that this damaged area can be restored to a near damage free state. The estimation of a maximal effective distance of recrystallization between the ion trajectories yields values of about 6-6.5 nm which are of the same order of magnitude as those estimated from the saturation density of latent ion tracks detected by TEM.

  17. Ni-Al2O3 and Ni-Al composite high-aspect-ratio microstructures

    NASA Astrophysics Data System (ADS)

    Wang, Tao; Sorrell, Melford; Kelly, Kevin W.; Ma, Evan

    1998-09-01

    High-aspect-ratio microstructures (HARMs) have a variety of potential applications in heat transfer, fluid mechanics, catalysts and other microelectromechanical systems (MEMS). The aim of this work is to demonstrate the feasibility to fabricate high performance particulate metal-matrix composite and intermetallic micromechanical structures using the LIGA process. Well-defined functionally graded Ni-Al2O3 and Ni-Al high-aspect-ratio microposts were electroformed into lithographically patterned PMMA holes from a nickel sulfamate bath containing submicron alumina and a diluted Watts bath containing microsized aluminum particles, respectively. SEM image analysis showed that the volume fraction of the alumina reached up to around 30% in the Ni-Al2O3 deposit. The Vickers microhardness of these composites is in the range of 418 through 545, which is higher than those of nickel microstructures from a similar particle-free bath and other Ni-based electrodeposits. In the work on Ni-Al electroplating, a newly developed diluted Watts bath was used to codeposit micron-sized aluminum particles. The intermetallic compound Ni3Al was formed by the reaction of nickel matrices and aluminum particles through subsequent annealing at 630 degrees Celsius. WDS and XRD analyses confirmed that the annealed coating is a two-phase (Ni-Ni3Al) composite. The maximum aluminum volume fraction reached 19% at a cathode current density of 12 mA cm-2, and the Vickers microhardness of the as-deposited coatings is in the range 392 - 515 depending on the amount of aluminum incorporated.

  18. High-Performance Wrap-Gated InGaAs Nanowire Field-Effect Transistors with Sputtered Dielectrics

    PubMed Central

    Shen, Li-Fan; Yip, SenPo; Yang, Zai-xing; Fang, Ming; Hung, TakFu; Pun, Edwin Y.B.; Ho, Johnny C.

    2015-01-01

    Although wrap-gated nanowire field-effect-transistors (NWFETs) have been explored as an ideal electronic device geometry for low-power and high-frequency applications, further performance enhancement and practical implementation are still suffering from electron scattering on nanowire surface/interface traps between the nanowire channel and gate dielectric as well as the complicated device fabrication scheme. Here, we report the development of high-performance wrap-gated InGaAs NWFETs using conventional sputtered Al2O3 layers as gate dielectrics, instead of the typically employed atomic layer deposited counterparts. Importantly, the surface chemical passivation of NW channels performed right before the dielectric deposition is found to significantly alleviate plasma induced defect traps on the NW channel. Utilizing this passivation, the wrap-gated device exhibits superior electrical performances: a high ION/IOFF ratio of ~2 × 106, an extremely low sub-threshold slope of 80 mV/decade and a peak field-effect electron mobility of ~1600 cm2/(Vs) at VDS = 0.1 V at room temperature, in which these values are even better than the ones of state-of-the-art NWFETs reported so far. By combining sputtering and pre-deposition chemical passivation to achieve high-quality gate dielectrics for wrap-gated NWFETs, the superior gate coupling and electrical performances have been achieved, confirming the effectiveness of our hybrid approach for future advanced electronic devices. PMID:26607169

  19. Kinetics for Steam and CO2 Reforming of Methane Over Ni/La/Al2O3 Catalyst.

    PubMed

    Park, Myung Hee; Choi, Bong Kwan; Park, Yoon Hwa; Moon, Dong Ju; Park, Nam Cook; Kim, Young Chul

    2015-07-01

    Kinetic studies of mixed (steam and dry) reforming of methane on Ni/La/Al2O3 and Ni/La-Co (1, 3 wt%)/Al2O3 catalysts were performed in an atmospheric fixed-bed reactor. Kinetic parameters for the mixed reforming over these catalysts were obtained under reaction conditions free from heat and mass transfer limitations. Variables for the mixed reforming were the reaction temperature and partial pressure of reactants. The fitting of the experimental data for the rate of methane conversion, rCH4, using the power law rate equation rCH4 = k(PrCH4)α(PCO2)β(PH2O)γ showed that the reaction orders α, β, and γ are steady and obtained values equal to α = 1, β = 0, and γ = 0. In other words, among CH4, CO2, H2O, and H2, only CH4 reaction orders were not zero and they were affected by the promoters. The apparent activation energy on catalysts Ni/La/Al2O3, Ni/La-Co (1)/Al2O3 and Ni/La-Co (3)/Al2O3 is 85.2, 93.8, and 99.4 kJ/mol, respectively. The addition of Co to Ni/La/Al2O3 was increased the apparent activation energy of the mixed reforming reaction. And the Ni/La-Co (3 wt%)/Al2O3 catalyst showed the highest reforming activity and apparent activation energy. The Co promoters can increase the apparent activation energy of mixed reforming of methane. PMID:26373118

  20. Kinetics for Steam and CO2 Reforming of Methane Over Ni/La/Al2O3 Catalyst.

    PubMed

    Park, Myung Hee; Choi, Bong Kwan; Park, Yoon Hwa; Moon, Dong Ju; Park, Nam Cook; Kim, Young Chul

    2015-07-01

    Kinetic studies of mixed (steam and dry) reforming of methane on Ni/La/Al2O3 and Ni/La-Co (1, 3 wt%)/Al2O3 catalysts were performed in an atmospheric fixed-bed reactor. Kinetic parameters for the mixed reforming over these catalysts were obtained under reaction conditions free from heat and mass transfer limitations. Variables for the mixed reforming were the reaction temperature and partial pressure of reactants. The fitting of the experimental data for the rate of methane conversion, rCH4, using the power law rate equation rCH4 = k(PrCH4)α(PCO2)β(PH2O)γ showed that the reaction orders α, β, and γ are steady and obtained values equal to α = 1, β = 0, and γ = 0. In other words, among CH4, CO2, H2O, and H2, only CH4 reaction orders were not zero and they were affected by the promoters. The apparent activation energy on catalysts Ni/La/Al2O3, Ni/La-Co (1)/Al2O3 and Ni/La-Co (3)/Al2O3 is 85.2, 93.8, and 99.4 kJ/mol, respectively. The addition of Co to Ni/La/Al2O3 was increased the apparent activation energy of the mixed reforming reaction. And the Ni/La-Co (3 wt%)/Al2O3 catalyst showed the highest reforming activity and apparent activation energy. The Co promoters can increase the apparent activation energy of mixed reforming of methane.

  1. Visible-light-driven photocatalysts Ag/AgCl dispersed on mesoporous Al2O3 with enhanced photocatalytic performance.

    PubMed

    Feng, Zhouzhou; Yu, Jiajie; Sun, Dongping; Wang, Tianhe

    2016-10-15

    In this paper, Ag/AgCl and Ag/AgCl/Al2O3 photocatalysts were synthesized via a precipitation reaction between NaCl and CH3COOAg or Ag(NH3)2NO3, wherein Ag/AgCl was immobilized into mesoporous Al2O3 medium. The Ag/AgCl-based nanostructures were characterized by scanning electron microscopy (SEM), transmission electron microscopy (TEM), X-ray diffraction (XRD), X-ray photoelectron spectroscopy (XPS), photoluminescence (PL) spectra, and so on. The photocatalysts displayed excellent photocatalytic activity for the degradations of methyl orange (MO) and methylene blue (MB) pollutants under visible light irradiation. The Ag/AgCl(CH3COOAg)/Al2O3 sample exhibited the best photocatalytic performance, degrading 99% MO after 9min of irradiation, which was 1.1 times, 1.22 times and 1.65 times higher than that of Ag/AgCl(Ag(NH3)2NO3)/Al2O3, Ag/AgCl(CH3COOAg) and Ag/AgCl(Ag(NH3)2NO3) photocatalyst, respectively. Meanwhile, Ag/AgCl(CH3COOAg)/Al2O3 also showed excellent capability of MB degradation. Compared to the data reported for Ag/AgCl/TiO2, the Ag/AgCl/Al2O3 prepared in this work exhibited a good performance for the degradation of methyl orange (MO). The results suggest that the dispersion of Ag/AgCl on mesoporous Al2O3 strongly affected their photocatalytic activities. O2(-), OH radicals and Cl(0) atoms are main active species during photocatalysis. PMID:27442145

  2. Analysis of the co-deposition of Al2O3 particles with nickel by an electrolytic route: The influence of organic additives presence and Al2O3 concentration

    NASA Astrophysics Data System (ADS)

    Temam, H. B.; Temam, E. G.

    2016-04-01

    Alloy coatings were prepared by co-deposition of Al2O3 particles in Ni matrix on carbon steel substrate from nickel chloride bath in which metallic powders were held in suspension. The influence of metal powder amount in the bath on chemical composition, morphology, thickness, microhardness and corrosion behavior of obtained coatings, has been investigated. It was shown that the presence of Al2O3 particles in deposit greatly improves the hardness and the wear resistance of alloy coatings. Characterization by microanalysis (EDX) of the various deposits elaborated confirms that the rate of particles incorporated increases as the concentration of solid particles increasing. The results showed that the presence of organic additives in Ni-Al2O3 electrolyte deposition led to an increase in the hardness and corrosion resistance of the deposits.

  3. Development of Ni-Mo/Al2O3 catalyst for reverse water gas shift (RWGS) reaction.

    PubMed

    Kharaji, Abolfazl Gharibi; Shariati, Ahmad; Ostadi, Mohammad

    2014-09-01

    In the present study, Mo/Al2O3 catalyst was prepared using impregnation method. Then it was promoted with Ni ions to produce Ni-Mo/Al2O3 catalyst. The structures of the catalysts were studied using X-ray diffraction (XRD), Energy dispersive X-ray (EDAX), Brunauer-Emmett-Teller (BET), X-ray photoelectron spectroscopy (XPS), CO chemisorption, temperature programmed reduction of hydrogen (H2-TPR) and scanning electron microscope (SEM) techniques. Catalytic performances of the two catalysts were investigated in a fixed-bed reactor for RWGS reaction. The results indicated that addition of nickel promoter to Mo/Al2O3 catalyst enhances its activity. It is reasonable for the electron deficient state of the Ni species and existence of NiMoO4 phase to possess high activity in RWGS reaction. Stability test of Ni-Mo/Al2O3 catalyst was carried out in a fixed bed reactor and a high CO2 conversion for 60 h time on stream was demonstrated. This study introduces a new catalyst, Ni-Mo/Al2O3, with high activity and stability for RWGS reaction.

  4. Assimilation Behavior of Calcium Ferrite and Calcium Diferrite with Sintered Al2O3 and MgO

    NASA Astrophysics Data System (ADS)

    Long, Hongming; Wu, Xuejian; Chun, Tiejun; Di, Zhanxia; Yu, Bin

    2016-10-01

    In this study, the assimilation behaviors between calcium ferrite (CF), calcium diferrite (CF2) and sintered Al2O3, and MgO were explored by an improved sessile drop technique, and the interfacial microstructure was discussed. The results indicated that the apparent contact angles of CF slag on Al2O3 and MgO substrate were 15.7 and 5.5 deg, and the apparent contact angles of CF2 slag on Al2O3 and MgO substrate were 17.9 and 7.2 deg, respectively. Namely, CF and CF2 slag were wetting well with Al2O3 and MgO substrate. The dissolution of Al2O3 substrate into the CF and CF2 slag was found to be the driving force of the wetting process. For the CF-MgO and CF2-MgO substrate systems, CaO contrarily distributed with MgO after wetting. For the CF-MgO system, after wetting, the slag was composed of CF and C2F, and most of the Fe2O3 permeated into substrate and formed two permeating layers.

  5. Passivation Effect of Atomic Layer Deposition of Al2O3 Film on HgCdTe Infrared Detectors

    NASA Astrophysics Data System (ADS)

    Zhang, Peng; Ye, Zhen-Hua; Sun, Chang-Hong; Chen, Yi-Yu; Zhang, Tian-Ning; Chen, Xin; Lin, Chun; Ding, Ring-Jun; He, Li

    2016-09-01

    The passivation effect of atomic layer deposition of (ALD) Al2O3 film on a HgCdTe infrared detector was investigated in this work. The passivation effect of Al2O3 film was evaluated by measuring the minority carrier lifetime, capacitance versus voltage ( C- V) characteristics of metal-insulator-semiconductor devices, and resistance versus voltage ( R- V) characteristics of variable-area photodiodes. The minority carrier lifetime, C- V characteristics, and R- V characteristics of HgCdTe devices passivated by ALD Al2O3 film was comparable to those of HgCdTe devices passivated by e-beam evaporation of ZnS/CdTe film. However, the baking stability of devices passivated by Al2O3 film is inferior to that of devices passivated by ZnS/CdTe film. In future work, by optimizing the ALD Al2O3 film growing process and annealing conditions, it may be feasible to achieve both excellent electrical properties and good baking stability.

  6. Microstructure and properties of Ni-Co/nano-Al 2O 3 composite coatings by pulse reversal current electrodeposition

    NASA Astrophysics Data System (ADS)

    Chang, L. M.; An, M. Z.; Guo, H. F.; Shi, S. Y.

    2006-12-01

    Ni-Co/nano-Al 2O 3 (Ni-Co/Al 2O 3) composite coatings were prepared under pulse reversal current (PRC) and direct current (dc) methods respectively. The microstructure of coatings was characterized by means of XRD, SEM and TEM. Both the Ni-Co alloy and composite coatings exhibit single phase of Ni matrix with face-centered cubic (fcc) crystal structure, and the crystal orientation of the Ni-Co/Al 2O 3 composite coating was transformed from crystal face (2 0 0) to (1 1 1) compared with alloy coatings. The hardness, anti-wear property and macro-residual stress were also investigated. The results showed that the microstructure and performance of the coatings were greatly affected by Al 2O 3 content and the electrodeposition methods. With the increasing of Al 2O 3 content, the hardness and wear resistance of the composite coatings enhanced. The PRC composite coatings exhibited compact surface, high hardness, better wear resistance and lower macro-residual stress compared with that of the dc composite coatings.

  7. Methanobactin-Mediated Synthesis of Gold Nanoparticles Supported over Al2O3 toward an Efficient Catalyst for Glucose Oxidation

    PubMed Central

    Xin, Jia-Ying; Lin, Kai; Wang, Yan; Xia, Chun-Gu

    2014-01-01

    Methanobactin (Mb) is a copper-binding peptide that appears to function as an agent for copper sequestration and uptake in methanotrophs. Mb can also bind and reduce Au(III) to Au(0). In this paper, Au/Al2O3 catalysts prepared by a novel incipient wetness-Mb-mediated bioreduction method were used for glucose oxidation. The catalysts were characterized, and the analysis revealed that very small gold nanoparticles with a particle size <4 nm were prepared by the incipient wetness-Mb-mediated bioreduction method, even at 1.0% Au loading (w/w). The influence of Au loading, calcination temperature and calcination time on the specific activity of Au/Al2O3 catalysts was systematically investigated. Experimental results showed that decomposing the Mb molecules properly by calcinations can enhance the specific activity of Au/Al2O3 catalysts, though they acted as reductant and protective agents during the catalyst preparation. Au/Al2O3 catalysts synthesized by the method exhibited optimum specific activity under operational synthesis conditions of Au loading of 1.0 wt % and calcined at 450 °C for 2 h. The catalysts were reused eight times, without a significant decrease in specific activity. To our knowledge, this is the first attempt at the preparation of Au/Al2O3 catalysts by Mb-mediated in situ synthesis of gold nanoparticles. PMID:25429424

  8. Influence of gamma-irradiation sterilization on the structural defects of sapphire single crystals (alpha-Al(2)O(3)).

    PubMed

    Dubois, J C; Jardin, C; Exbrayat, P; Lissac, M; Treheux, D

    2001-01-01

    The influence of sterilization by gamma rays on the structure and the electrical behaviour of sapphire single crystal (alpha-Al(2)O(3)) was studied successively by thermoluminescence, by cathodoluminescence and by observation of the scanning electron microscope mirror effect. The mirror method allowed us to measure the capacity of an insulating material to trap electrons. The structural analysis of the alpha-Al(2)O(3) showed that there were oxygen vacancies, as well as chromium and titanium impurities. It was possible to demonstrate that these defects, especially the oxygen vacancies, are in a different state after a 30 kilogray irradiation. The valency state changes of these defects and the presence of trapped charges are accompanied by a deformation of the crystalline lattice which results in a modification of its electrical properties. At room temperature, the irradiated alpha-Al(2)O(3), unlike non irradiated alpha-Al(2)O(3), is capable of trapping electrons. It can be concluded that gamma-ray sterilization modifies the cohesive energy of alpha-Al(2)O(3), which could lead to mechanical changes (surface charge, friction, wear, fracture strength, em leader) in this material. PMID:11564909

  9. Turbulent heat transfer and pressure drop characteristics of dilute water based Al2O3-Cu hybrid nanofluids.

    PubMed

    Suresh, S; Venkitaraj, K P; Hameed, M Shahul; Sarangan, J

    2014-03-01

    A study on fully developed turbulent convective heat transfer and pressure drop characteristics of Al2O3-Cu/water hybrid nanofluid flowing through a uniformly heated circular tube is presented in this paper. For this, Al2O3-Cu nanocomposite powder was synthesized in a thermo chemical route using hydrogen reduction technique and dispersed the hybrid nano powder in deionised water to form a stable hybrid nanofluid of 0.1% volume concentration. The prepared powder was characterized by X-ray Diffraction (XRD) and Scanning Electron Microscope (SEM) to confirm the chemical composition, determine the particle size and study the surface morphology. Stability of the nanofluid was ensured by pH and zeta potential measurements. The average heat transfer enhancement for Al2O3-Cu/water hybrid nanofluid is 8.02% when compared to pure water. The experimental results also showed that 0.1% Al2O3-Cu/water hybrid nanofluids have slightly higher friction factor compared to 0.1% Al2O3/water nanofluid. The empirical correlations proposed for Nusselt number and friction factor were well agreed with the experimental data.

  10. Methanobactin-mediated synthesis of gold nanoparticles supported over Al2O3 toward an efficient catalyst for glucose oxidation.

    PubMed

    Xin, Jia-Ying; Lin, Kai; Wang, Yan; Xia, Chun-Gu

    2014-01-01

    Methanobactin (Mb) is a copper-binding peptide that appears to function as an agent for copper sequestration and uptake in methanotrophs. Mb can also bind and reduce Au(III) to Au(0). In this paper, Au/Al2O3 catalysts prepared by a novel incipient wetness-Mb-mediated bioreduction method were used for glucose oxidation. The catalysts were characterized, and the analysis revealed that very small gold nanoparticles with a particle size <4 nm were prepared by the incipient wetness-Mb-mediated bioreduction method, even at 1.0% Au loading (w/w). The influence of Au loading, calcination temperature and calcination time on the specific activity of Au/Al2O3 catalysts was systematically investigated. Experimental results showed that decomposing the Mb molecules properly by calcinations can enhance the specific activity of Au/Al2O3 catalysts, though they acted as reductant and protective agents during the catalyst preparation. Au/Al2O3 catalysts synthesized by the method exhibited optimum specific activity under operational synthesis conditions of Au loading of 1.0 wt % and calcined at 450 °C for 2 h. The catalysts were reused eight times, without a significant decrease in specific activity. To our knowledge, this is the first attempt at the preparation of Au/Al2O3 catalysts by Mb-mediated in situ synthesis of gold nanoparticles. PMID:25429424

  11. Nano porous Al2O3-TiO2 thin film based humidity sensor prepared by spray pyrolysis technique

    NASA Astrophysics Data System (ADS)

    Chandrashekara, H. D.; Angadi, Basavaraj; Ravikiran, Y. T.; Poornima, P.; Shashidhar, R.; Murthy, L. C. S.

    2016-05-01

    The nano porous surface structured TiO2 and Al2O3-TiO2 thin films were prepared using spray pyrolysis technique at 350°C. The XRD pattern of Al2O3-TiO2 film shows anatase phase and mixed phase of Al2TiO5. The surface morphology of films show a uniformly distributed nano porous structure. The elemental analysis through EDAX shows good stoichiometry. The sensitivity for humidity sensing were determined for both films of TiO2 and Al2O3-TiO2 and corresponding values are found to be 74.2% and 84.02%, this result reveal that Al2O3-TiO2 films shows higher sensing percent than the TiO2 due to the nano porous surface nature. The Al2O3-TiO2 film shows fast response time and long recovery time than the TiO2 film, this may be due to the meso-porous morphology of these films.

  12. Comparing the Thermodynamic Behaviour of Al(1)+ZrO2(s) to Al(1)+Al2O3(s)

    NASA Technical Reports Server (NTRS)

    Copland, Evan

    2004-01-01

    In an effort to better determine the thermodynamic properties of Al(g) and Al2O(g). the vapor in equilibrium with Al(l)+ZrO2(s) was compared to the vapor in equilibrium with Al(l)+Al2O3(s) over temperature range 1197-to-1509K. The comparison was made directly by Knudsen effusion-cell mass spectrometry with an instrument configured for a multiple effusion-cell vapor source (multi-cell KEMS). Second law enthalpies of vaporization of Al(g) and Al2O(g) together with activity measurements show that Al(l)+ZrO2(s) is thermodynamically equivalent to Al(l)+Al2O3(s), indicating Al(l) remained pure and Al2O3(s) was present in the ZrO2-cell. Subsequent observation of the Al(l)/ZrO2 and vapor/ZrO2 interfaces revealed a thin Al2O3-layer had formed, separating the ZrO2-cell from Al(l) and Al(g)+Al2O(g), effectively transforming it into an Al2O3 effusion-cell. This behavior agrees with recent observations made for Beta-NiAl(Pt) alloys measured in ZrO2 effusion-cell.

  13. Atomic layer deposition of dielectrics on graphene using reversibly physisorbed ozone.

    PubMed

    Jandhyala, Srikar; Mordi, Greg; Lee, Bongki; Lee, Geunsik; Floresca, Carlo; Cha, Pil-Ryung; Ahn, Jinho; Wallace, Robert M; Chabal, Yves J; Kim, Moon J; Colombo, Luigi; Cho, Kyeongjae; Kim, Jiyoung

    2012-03-27

    Integration of graphene field-effect transistors (GFETs) requires the ability to grow or deposit high-quality, ultrathin dielectric insulators on graphene to modulate the channel potential. Here, we study a novel and facile approach based on atomic layer deposition through ozone functionalization to deposit high-κ dielectrics (such as Al(2)O(3)) without breaking vacuum. The underlying mechanisms of functionalization have been studied theoretically using ab initio calculations and experimentally using in situ monitoring of transport properties. It is found that ozone molecules are physisorbed on the surface of graphene, which act as nucleation sites for dielectric deposition. The physisorbed ozone molecules eventually react with the metal precursor, trimethylaluminum to form Al(2)O(3). Additionally, we successfully demonstrate the performance of dual-gated GFETs with Al(2)O(3) of sub-5 nm physical thickness as a gate dielectric. Back-gated GFETs with mobilities of ~19,000 cm(2)/(V·s) are also achieved after Al(2)O(3) deposition. These results indicate that ozone functionalization is a promising pathway to achieve scaled gate dielectrics on graphene without leaving a residual nucleation layer.

  14. Thermoelectric Powers of Cells With NaF-AlF3-Al2O3 Melts

    NASA Astrophysics Data System (ADS)

    Flem, Belinda E.; Xu, Qian; Kjelstrup, Signe; Sterten, Åsmund

    2001-07-01

    A thermodynamic description of the Peltier heat at the aluminum and the oxygen electrode in the system NaF-AlF3-Al2O3 is given. The thermoelectric power in melts with molar ratios n NaF/n AlF3 from 3.0 to 1.0, saturated with alumina are measured. Seebeck coefficients for molten fluoride electrolytes saturated with alumina, electrolytes that are relevant for aluminum electrowinning electrolysis cells, are reported. The results allow determinations of Peltier heats of aluminum, oxygen and carbon electrodes in NaF-AlF3 electrolytes saturated with alumina. For molar ratios of n NaF/n AlF3 between 2.6 and 1.2, there is a Peltier heating of the aluminum cathode. This heating is in the same order of magnitude as the electrolyte Joule heat, when the current density is 0.7 A cm-2. For molar ratio n NaF/n AlF3 equal to 1.0 the Peltier effect at the aluminum electrode approaches zero. From theoretical considerations we expect a drop also for molar ratio 3.0. For the anode we report a Peltier cooling that is larger than the heat produced by the anodic overvoltage, in melts with NaF/AlF3 molar ratio between 2.6 and 1.2 saturated with alumina.

  15. Surface reactions of dimethyl ether on γ-Al2O3

    NASA Astrophysics Data System (ADS)

    Bondarenko, G. N.; Volnina, E. A.; Kipnis, M. A.; Rodionov, A. S.; Samokhin, P. V.; Lin, G. I.

    2016-02-01

    The surface reactions of dimethyl ether (DME) on industrial alumina (γ-Al2O3) were studied by chromatographic analysis of the products at the outlet of the flow reactor and (independently) by diffuse reflectance IR spectroscopy. The major products of the reactions at 250°C were found to be methanol formed in the reaction of DME with hydroxyl groups (the 3720 and 3674 cm-1 bands in the diffuse reflectance spectrum) and various methoxy groups (the 1121, 1070, 695, and 670 cm-1 bands in the differential spectra). The presence of molecularly adsorbed methanol was confirmed by experiments with methanol fed in a high-temperature IR cell. The interaction of the resulting methanol molecule with the hydroxyl group led to the formation of a water molecule in the gas phase and a methoxy group on the oxide surface. Strong adsorption of molecular DME was revealed, which was favored by an increase in the temperature of the preliminary calcination of oxide from 250 to 450-500°C; treatment of alumina with water vapor after its preliminary contact with DME led to a recovery of the hydroxyl coating and a replacement of molecularly adsorbed DME with hydroxyl. The thermal effect recorded in a flow reactor was positive during the adsorption of DME and negative during the desorption of weakly bonded DME. Schemes of formation of methoxy groups in the interaction of DME and methanol with surface hydroxyls were suggested.

  16. Heat transfer performance of Al2O3/water nanofluids in a mini channel heat sink.

    PubMed

    Dominic, A; Sarangan, J; Suresh, S; Sai, Monica

    2014-03-01

    The high density heat removal in electronic packaging is a challenging task of modern days. Finding compact, energy efficient and cost effective methods of heat removal is being the interest of researchers. In the present work, mini channel with forced convective heat transfer in simultaneously developing regime is investigated as the heat transfer coefficient is inversely proportional to hydraulic diameter. Mini channel heat sink is made from the aluminium plate of 30 mm square with 8 mm thickness. It has 15 mini channel of 0.9 mm width, 1.3 mm height and 0.9 mm of pitch. DI water and water based 0.1% and 0.2% volume fractions of Al2O3/water nanofluids are used as coolant. The flow rates of the coolants are maintained in such a way that it is simultaneously developing. Reynolds number is varied from 400 to 1600 and heat input is varied from 40 W to 70 W. The results showed that heat transfer coefficient is more than the heat transfer coefficient of fully developed flow. Also the heat transfer is more for nanofluids compared to DI water.

  17. Numerical investigation of Al2O3/water nanofluid laminar convective heat transfer through triangular ducts.

    PubMed

    Zeinali Heris, Saeed; Noie, Seyyed Hossein; Talaii, Elham; Sargolzaei, Javad

    2011-02-28

    In this article, laminar flow-forced convective heat transfer of Al2O3/water nanofluid in a triangular duct under constant wall temperature condition is investigated numerically. In this investigation, the effects of parameters, such as nanoparticles diameter, concentration, and Reynolds number on the enhancement of nanofluids heat transfer is studied. Besides, the comparison between nanofluid and pure fluid heat transfer is achieved in this article. Sometimes, because of pressure drop limitations, the need for non-circular ducts arises in many heat transfer applications. The low heat transfer rate of non-circular ducts is one the limitations of these systems, and utilization of nanofluid instead of pure fluid because of its potential to increase heat transfer of system can compensate this problem. In this article, for considering the presence of nanoparticl: es, the dispersion model is used. Numerical results represent an enhancement of heat transfer of fluid associated with changing to the suspension of nanometer-sized particles in the triangular duct. The results of the present model indicate that the nanofluid Nusselt number increases with increasing concentration of nanoparticles and decreasing diameter. Also, the enhancement of the fluid heat transfer becomes better at high Re in laminar flow with the addition of nanoparticles.

  18. Stability of TiO2 and Al2O3 Nanofluids

    NASA Astrophysics Data System (ADS)

    Wang, Xian-Ju; Li, Hai; Li, Xin-Fang; Wang, Zhou-Fei; Lin, Fang

    2011-08-01

    Aiming at the dispersion stability of nanofluids, we investigate the absorbency and the zeta potential of TiO2 and Al2O3 nanofluids under different pH values and different dispersant concentrations. The results show that in the mass fraction 0.05% alumina and 0.01% titanium dioxide nanosuspensions, the absolute value of the zeta potential and the absorbency of the two nanofluids with sodium dodecyl sulfate (SDS) dispersant are the highest at an optimal pH (pHAl2O3 ≈ 6.0, pHTiO2 ≈ 9.5) and that there is a good correlation between absorbency and zeta potential: the higher the absolute value of the zeta potential is, the greater the absorbency is, and the better the stability of the system is. The optimizing concentrations for SDS are 0.10% and 0.14%, respectively, at which the two nanofluids have the best dispersion results. The calculated DLVO interparticle interaction potentials verify the experimental results of the pH effect on the stability behavior.

  19. Interface considerations in Al2O3/NiAl composite

    NASA Technical Reports Server (NTRS)

    Misra, Ajay K.

    1993-01-01

    The fiber-matrix interface requirements in an Al2O3/NiAl composite were examined from theoretical considerations. Several factors that influence the interface bonding requirements were analyzed. These include: (1) residual stresses due to fiber-matrix coefficient of thermal expansion (CTE) mismatch; (2) matrix cracking stress at room temperature; (3) fracture toughness at room temperature; (4) load transfer from the matrix to the fiber and ultimate tensile strength at the use temperature; and (5) creep resistance at high temperature. A relatively weak fiber-matrix bond, with an interfacial shear strength of approximately 15-20 MPa, might be sufficient for attaining the desired mechanical properties in the fiber direction at the use temperature. A weak fiber-matrix bond is also beneficial for increasing the fracture toughness of the composite at room temperature. In contrast, a strong fiber-matrix bond is required to withstand some of the residual stresses resulting from the fiber-matrix CTE mismatch, which are not likely to be reduced significantly by interface coatings. A relatively strong bond is also beneficial in increasing the matrix cracking stress at room temperature. Various interface coating options to accommodate the conflicting bonding requirements were reviewed. One viable coating option is to incorporate a thick, ductile interface layer well bonded to both the fiber and the matrix.

  20. New battery strategies with a polymer/Al2O3 separator

    NASA Astrophysics Data System (ADS)

    Park, Kyusung; Cho, Joon Hee; Shanmuganathan, Kadhiravan; Song, Jie; Peng, Jing; Gobet, Mallory; Greenbaum, Steven; Ellison, Christopher J.; Goodenough, John B.

    2014-10-01

    A low-cost, thin, flexible, and mechanically robust alkali-ion electrolyte separator is shown to allow fabrication of a safe rechargeable alkali-ion battery with alternative cathode strategies. A Na-ion battery with an insertion host as cathode and a Li-ion battery with a redox flow-through cathode are demonstrated to cycle without significant fade. The separator membrane is a composite of Al2O3 particles and cross-linked ethylene-oxide chains; it can be fabricated at low cost into a large-area thin membrane that blocks dendrites from an alkali-metal anode. To block a soluble ferrocene redox molecule from crossing from the cathode side to the anode in a Li-ion battery with a redox-flow cathode, a thin mixed Li+/electronic-conducting film has been added to the cathode side of the composite separator. An osmosis issue was minimized by balancing concentrations of solutes on the two sides of the separator where the cathode side contains a soluble redox molecule.

  1. The Influence of impact on Composite Armour System Kevlar-29/polyester-Al2O3

    NASA Astrophysics Data System (ADS)

    Ramadhan, A. A.; Abu Talib, A. R.; Mohd Rafie, A. S.; Zahari, R.

    2012-09-01

    An experimental investigation of high velocity impact responses of composite laminated plates using a helium gas gun has been presented in this paper. The aim of this study was to develop the novel composite structure that meets the specific requirements of ballistic resistance which used for body protections, vehicles and other applications. Thus the high velocity impact tests were performed on composite Kevlar-29 fiber/polyester resin with alumina powder (Al2O3). The impact test was conducted by using a cylindrical steel projectile of 7.62mm diameter at a velocity range of 160-400 m/s. The results (shown in this work) are in terms of varying plate thickness and the amount of energy absorbed by the laminated plates meanwhile we obtained that the 12mm thickness of composite plate suitable for impact loading up to 200m/s impact velocity. Therefore this composite structure (it is used to reduce the amount of Kevlar) considered most economical armoure products. We used the ANSYS AUTODYN 3D- v.12 software for our simulations. The results have been obtained a4.1% maximum errors with experimental work of energy absorption.

  2. Characterization of Al2O3 Supported Nickel Catalysts Derived from RFNon-thermal Plasma Technology

    SciTech Connect

    Jang, Ben W; Helleson, Michael J; Shi, Chunkai; Rondinone, Adam Justin; Schwartz, Viviane; Liang, Chengdu; Overbury, Steven {Steve} H

    2008-01-01

    Catalysts derived from non-thermal plasma techniques have previously shown unusual and highly advantageous catalytic properties including room temperature reduction, unusual metal particle structure and metal-support interactions, and enhanced selectivity and stability. This study focuses on the characterization of Al2O3 supported Ni catalysts derived from the RF non-thermal plasma technique with in-situ XRD, TPR-MS and STEM and on relating the results to the enhanced activity and stability of benzene hydrogenation. The results suggest that catalysts with plasma treatments before impregnation are relatively easier to be reduced and result in better activities under mild reduction conditions. These plasma treatments stabilize the nickel particle sizes of air(B) and H2(B) catalysts at 600 C by slowing down the sintering process. Plasma treatments after the impregnation of precursors, on the other hand, tend to delay the growth of nickel particles below 600 C, forming smaller Ni particles, but with a sudden increase in particle size near 600 C. It suggests that the structure of Ni nitrate and the metal-support interaction have been altered by the plasma treatments. The reduction patterns of plasma 1 treated catalysts are, therefore, changed. The catalyst with a combination plasma treatment demonstrates that the effect of a combination plasma treatment is larger than either the plasma treatment before or after the impregnation alone. Both plasma treatments before and after the impregnation of metal precursor play important roles in modifying supported metal catalysts.

  3. Mixed Matrix Carbon Molecular Sieve and Alumina (CMS-Al2O3) Membranes.

    PubMed

    Song, Yingjun; Wang, David K; Birkett, Greg; Martens, Wayde; Duke, Mikel C; Smart, Simon; Diniz da Costa, João C

    2016-01-01

    This work shows mixed matrix inorganic membranes prepared by the vacuum-assisted impregnation method, where phenolic resin precursors filled the pore of α-alumina substrates. Upon carbonisation, the phenolic resin decomposed into several fragments derived from the backbone of the resin matrix. The final stages of decomposition (>650 °C) led to a formation of carbon molecular sieve (CMS) structures, reaching the lowest average pore sizes of ~5 Å at carbonisation temperatures of 700 °C. The combination of vacuum-assisted impregnation and carbonisation led to the formation of mixed matrix of CMS and α-alumina particles (CMS-Al2O3) in a single membrane. These membranes were tested for pervaporative desalination and gave very high water fluxes of up to 25 kg m(-2) h(-1) for seawater (NaCl 3.5 wt%) at 75 °C. Salt rejection was also very high varying between 93-99% depending on temperature and feed salt concentration. Interestingly, the water fluxes remained almost constant and were not affected as feed salt concentration increased from 0.3, 1 and 3.5 wt%.

  4. Thermal conductivity and viscosity measurements of ethylene glycol-based Al2O3 nanofluids

    NASA Astrophysics Data System (ADS)

    Pastoriza-Gallego, María José; Lugo, Luis; Legido, José Luis; Piñeiro, Manuel M.

    2011-12-01

    The dispersion and stability of nanofluids obtained by dispersing Al2O3 nanoparticles in ethylene glycol have been analyzed at several concentrations up to 25% in mass fraction. The thermal conductivity and viscosity were experimentally determined at temperatures ranging from 283.15 K to 323.15 K using an apparatus based on the hot-wire method and a rotational viscometer, respectively. It has been found that both thermal conductivity and viscosity increase with the concentration of nanoparticles, whereas when the temperature increases the viscosity diminishes and the thermal conductivity rises. Measured enhancements on thermal conductivity (up to 19%) compare well with literature values when available. New viscosity experimental data yield values more than twice larger than the base fluid. The influence of particle size on viscosity has been also studied, finding large differences that must be taken into account for any practical application. These experimental results were compared with some theoretical models, as those of Maxwell-Hamilton and Crosser for thermal conductivity and Krieger and Dougherty for viscosity.

  5. Al2O3/GdAlO3 fiber for dental porcelain reinforcement.

    PubMed

    Medeiros, Igor S; Luz, Luciana A; Yoshimura, Humberto N; Cesar, Paulo F; Hernandes, Antonio C

    2009-10-01

    The aim of this study was to test the hypothesis that the addition of continuous or milled GdAlO3/Al2O3 fibers to a dental porcelain increases its mechanical properties. Porcelain bars without reinforcement (control) were compared to those reinforced with long fibers (30 vol%). Also, disk specimens reinforced with milled fibers were produced by adding 0 (control), 5 or 10 vol% of particles. The reinforcement with continuous fibers resulted in significant increase in the uniaxial flexural strength from 91.5 to 217.4 MPa. The addition of varied amounts of milled fibers to the porcelain did not significantly affect its biaxial flexural strength compared to the control group. SEM analysis showed that the interface between the continuous fiber and the porcelain was free of defects. On the other hand, it was possible to note the presence of cracks surrounding the milled fiber/porcelain interface. In conclusion, the reinforcement of the porcelain with continuous fibers resulted in an efficient mechanism to increase its mechanical properties; however the addition of milled fibers had no significant effect on the material because the porcelain was not able to wet the ceramic particles during the firing cycle.

  6. Mixed Matrix Carbon Molecular Sieve and Alumina (CMS-Al2O3) Membranes

    NASA Astrophysics Data System (ADS)

    Song, Yingjun; Wang, David K.; Birkett, Greg; Martens, Wayde; Duke, Mikel C.; Smart, Simon; Diniz da Costa, João C.

    2016-07-01

    This work shows mixed matrix inorganic membranes prepared by the vacuum-assisted impregnation method, where phenolic resin precursors filled the pore of α-alumina substrates. Upon carbonisation, the phenolic resin decomposed into several fragments derived from the backbone of the resin matrix. The final stages of decomposition (>650 °C) led to a formation of carbon molecular sieve (CMS) structures, reaching the lowest average pore sizes of ~5 Å at carbonisation temperatures of 700 °C. The combination of vacuum-assisted impregnation and carbonisation led to the formation of mixed matrix of CMS and α-alumina particles (CMS-Al2O3) in a single membrane. These membranes were tested for pervaporative desalination and gave very high water fluxes of up to 25 kg m‑2 h‑1 for seawater (NaCl 3.5 wt%) at 75 °C. Salt rejection was also very high varying between 93–99% depending on temperature and feed salt concentration. Interestingly, the water fluxes remained almost constant and were not affected as feed salt concentration increased from 0.3, 1 and 3.5 wt%.

  7. Fatigue strength of Ce-TZP/Al2O3 nanocomposite with different surfaces.

    PubMed

    Takano, T; Tasaka, A; Yoshinari, M; Sakurai, K

    2012-08-01

    Ce-TZP/Al(2)O(3) nanocomposite (NANOZR) has not only higher strength, but also higher fracture toughness than conventional Y-TZP, indicating its potential for use in dental implants. Surface treatment to obtain osseointegration, however, may alter its surface topography, thus affecting the cyclic fatigue strength that plays such an important role in the durability of this material. The aim of this study was to evaluate the influence of surface treatment on cyclic fatigue strength in NANOZR as compared with grit-blasted and acid-etched Y-TZP (125BE Y-TZP). Bi-axial flexure strength was measured in both static and cyclic fatigue tests, as recommended by ISO 6872. The cyclic fatigue test was performed by the staircase method in distilled water at 37°C, with a load of 10(6) cycles and 10 Hz. Bi-axial flexure strength of NANOZR was 1111-1237 MPa and 667-881 MPa in the static and cyclic fatigue tests, respectively. The bi-axial flexure strength of NANOZR under all conditions was greater than that of 125BE Y-TZP in the static and cyclic fatigue tests. The cyclic fatigue strength of NANOZR was more than twice that of Y-TZP as specified in ISO 13356 for surgical implants (320 MPa), indicating the promise of this material for use in dental implants.

  8. Thermal conductivity and viscosity measurements of ethylene glycol-based Al2O3 nanofluids

    PubMed Central

    2011-01-01

    The dispersion and stability of nanofluids obtained by dispersing Al2O3 nanoparticles in ethylene glycol have been analyzed at several concentrations up to 25% in mass fraction. The thermal conductivity and viscosity were experimentally determined at temperatures ranging from 283.15 K to 323.15 K using an apparatus based on the hot-wire method and a rotational viscometer, respectively. It has been found that both thermal conductivity and viscosity increase with the concentration of nanoparticles, whereas when the temperature increases the viscosity diminishes and the thermal conductivity rises. Measured enhancements on thermal conductivity (up to 19%) compare well with literature values when available. New viscosity experimental data yield values more than twice larger than the base fluid. The influence of particle size on viscosity has been also studied, finding large differences that must be taken into account for any practical application. These experimental results were compared with some theoretical models, as those of Maxwell-Hamilton and Crosser for thermal conductivity and Krieger and Dougherty for viscosity. PMID:21711737

  9. Residual Stress in Brazing of Submicron Al2O3 to WC-Co

    NASA Astrophysics Data System (ADS)

    Grunder, T.; Piquerez, A.; Bach, M.; Mille, P.

    2016-07-01

    This study evaluated the residual stresses induced by brazing and grinding submicron Al2O3, using different methods. Energy dispersive x-ray spectrometry analysis (EDX) of 72Ag-Cu filler and filler/WC-Co interface showed evidence of atomic diffusion and possible formation of titanium oxide layers between the joint and the bonding materials. An analytical model supported by the finite element method (FEM) based on strain determination due to the difference in variation of thermal expansion was used to assess the stress distribution at the coupling interface and in bulk materials. The model took into account the evolution of the Young's modulus and of the thermal expansion with temperature. The model could be used to follow strain and stress evolutions of the bonded materials during the cooling cycle. The maximum stress rose above -300 MPa at the center of the 100 × 100 × 3 mm ceramic plates. The residual stresses on the external surface of ceramic were investigated by x-ray diffraction (XRD) and indentation fracture method (IFM). After brazing and grinding the plate, the principal stresses were 128.1 and 94.9 MPa, and the shear stress was -20.1 MPa. Microscopic examination revealed grain pull-out promoted by the global residual stresses induced by the brazing and grinding processes. The surface stresses evaluated by the different methods were reasonably correlated.

  10. Fatigue strength of Ce-TZP/Al2O3 nanocomposite with different surfaces.

    PubMed

    Takano, T; Tasaka, A; Yoshinari, M; Sakurai, K

    2012-08-01

    Ce-TZP/Al(2)O(3) nanocomposite (NANOZR) has not only higher strength, but also higher fracture toughness than conventional Y-TZP, indicating its potential for use in dental implants. Surface treatment to obtain osseointegration, however, may alter its surface topography, thus affecting the cyclic fatigue strength that plays such an important role in the durability of this material. The aim of this study was to evaluate the influence of surface treatment on cyclic fatigue strength in NANOZR as compared with grit-blasted and acid-etched Y-TZP (125BE Y-TZP). Bi-axial flexure strength was measured in both static and cyclic fatigue tests, as recommended by ISO 6872. The cyclic fatigue test was performed by the staircase method in distilled water at 37°C, with a load of 10(6) cycles and 10 Hz. Bi-axial flexure strength of NANOZR was 1111-1237 MPa and 667-881 MPa in the static and cyclic fatigue tests, respectively. The bi-axial flexure strength of NANOZR under all conditions was greater than that of 125BE Y-TZP in the static and cyclic fatigue tests. The cyclic fatigue strength of NANOZR was more than twice that of Y-TZP as specified in ISO 13356 for surgical implants (320 MPa), indicating the promise of this material for use in dental implants. PMID:22736446

  11. Structural, elastic, vibrational and electronic properties of amorphous Al2O3 from ab initio calculations.

    PubMed

    Davis, Sergio; Gutiérrez, Gonzalo

    2011-12-14

    First-principles molecular dynamics calculations of the structural, elastic, vibrational and electronic properties of amorphous Al(2)O(3), in a system consisting of a supercell of 80 atoms, are reported. A detailed analysis of the interatomic correlations allows us to conclude that the short-range order is mainly composed of AlO(4) tetrahedra, but, in contrast with previous results, also an important number of AlO(6) octahedra and AlO(5) units are present. The vibrational density of states presents two frequency bands, related to bond-bending and bond-stretching modes. It also shows other recognizable features present in similar amorphous oxides. We also present the calculation of elastic properties (bulk modulus and shear modulus). The calculated electronic structure of the material, including total and partial electronic density of states, charge distribution, electron localization function and the ionicity for each species, gives evidence of correlation between the ionicity and the coordination for each Al atom.

  12. Porous Alumina Template by Selective Dissolution of Ni from Sintered Al2O3-Ni Composite

    NASA Astrophysics Data System (ADS)

    Jain, M.; Moon, A. P.; Mondal, K.

    2015-07-01

    In the present study, porous alumina template was fabricated by selective dissolution of Ni from the pressureless sintered Al2O3-Ni. Alumina and Ni powders of 99.9% purity were subjected to ball milling (200 rpm, 1 h, 10:1 ball-to-powder weight ratio) in order to get homogeneous mechanical mixture. The milled powder was compacted using hydraulic press under the uniaxial pressure of 400 MPa for 1 min, and the pressureless sintering was carried out in reducing atmosphere (H2) at 1400 °C. Ni was then selectively and completely dissolved from the 1-mm-thick sintered disk of diameter 16 mm in 1 M HCl + 3 wt.% FeCl3 solution to get the porous template of alumina. The porous alumina template was found to have sufficient compressive strength. BET, x-ray diffraction, optical microscopy, and scanning electron microscopy studies along with energy dispersive spectroscopy were performed to study microstructural evolutions, bonding characteristics, and distributions of Ni before and after the dissolution of the sintered composite.

  13. Numerical investigation of Al2O3/water nanofluid laminar convective heat transfer through triangular ducts

    PubMed Central

    2011-01-01

    In this article, laminar flow-forced convective heat transfer of Al2O3/water nanofluid in a triangular duct under constant wall temperature condition is investigated numerically. In this investigation, the effects of parameters, such as nanoparticles diameter, concentration, and Reynolds number on the enhancement of nanofluids heat transfer is studied. Besides, the comparison between nanofluid and pure fluid heat transfer is achieved in this article. Sometimes, because of pressure drop limitations, the need for non-circular ducts arises in many heat transfer applications. The low heat transfer rate of non-circular ducts is one the limitations of these systems, and utilization of nanofluid instead of pure fluid because of its potential to increase heat transfer of system can compensate this problem. In this article, for considering the presence of nanoparticl: es, the dispersion model is used. Numerical results represent an enhancement of heat transfer of fluid associated with changing to the suspension of nanometer-sized particles in the triangular duct. The results of the present model indicate that the nanofluid Nusselt number increases with increasing concentration of nanoparticles and decreasing diameter. Also, the enhancement of the fluid heat transfer becomes better at high Re in laminar flow with the addition of nanoparticles. PMID:21711694

  14. Structure and dynamics of PtSn/ γ Al 2 O 3

    NASA Astrophysics Data System (ADS)

    Vila, F. D.; Rehr, J. J.; Kelly, S. D.; Bare, S. R.

    2011-03-01

    Supported metal clusters have many industrial applications, especially in heterogeneous catalysis. Their activity and durability is determined by their internal atomic and electronic structure, as well as by their interaction with the support. We have previously shown that unusual phenomena such as large structural disorder and negative thermal expansion in supported Pt clusters can be understood by using a combination of MD and x-ray absorption spectroscopy simulations. Here we present results for prototypical Pt 10 Sn 10 alloy clusters on γ Al 2 O3 . Our simulations show that the internal structure and surface location of the clusters varies dynamically on a time scale of a few ps. While the Sn atoms are especially mobile, the clusters have well defined Pt-Pt and Pt-Sn coordination shells at ~ 2.75 AA. Moreover, at any instant there are between 2 and 5 bonds between the Pt/Sn and the O atoms in the surface. Finally, we present simulations of the XANES spectra and their relation to charge transfers between atoms in the cluster and between the cluster and the surface. Supported by NSF Grant PHY-0835543, UOP LLC, a Honeywell Company with computer support from NERSC.

  15. Enhanced TC in granular and thin film Al-Al2O3 nanostructures

    NASA Astrophysics Data System (ADS)

    Higgins, J. S.; Greene, R. L.

    It is known since the 1970s that the superconducting transition temperature of granular aluminum films can be as high as two to three times the transition temperature of bulk aluminum, depending on the grain size and how strongly the nanometer size grains are connected1,2. As the strength of the grain connectivity becomes increasingly weak, the enhanced TC is suppressed. The mechanism behind this enhancement is still under debate. Recently, work on larger aluminum nanoparticles (18nm) embedded in an insulating Al2O3 matrix showed an onset of the superconducting transition as high as three times that of bulk aluminum3. In this situation, the Al grains are electrically disconnected and in a regime far removed from that of the granular films. Here we compare the two situations through electronic and thermal measurements in order to help elucidate the mechanism behind the enhancements. 1S. Pracht, et al., arXiv:1508.04270v1 [cond-mat.supr-con] (2015). 2G. Deutscher, New Superconductors From Granular to High TC, New Jersey: World Scientific, 2006, p. 72-74. 3V. N. Smolyaninova, et al., Sci. Rep. 5, 15777 (2015). Funding by NSF DMR # 1410665.

  16. Molten Al and (0001) α-Al2O3 Single Crystal: Interface Stability

    NASA Astrophysics Data System (ADS)

    Aguilar-santillan, Joaquin

    2016-10-01

    The roughness on the " c"-plane (0001) sapphire single crystal reduces wetting of molten aluminum under Ar gas (99.999 pct) and PO2 10-15 Pa from 1073 K to 1473 K (800 °C to 1200 °C). The contact angle effect was partially understood by the roughness factor, R; however, the interfacial phenomenon involving this effect is yet a topic to study as it also depends, between other things, on the shape of droplet and the relationship to its substrate. The theory explains that the surface tension of liquid aluminum obtained by the sessile drop test can be determined just when a substrate is polished or free of any surface imperfection. However, roughness of sapphire (0001) surface promotes an apparent surface tension that exhibits different trends of wetting to that proposed in previous studies. This property adds to the interfacial wetting phenomena obtained from the Al-Al2O3 couple system and provides answers for contact angle trends toward a much more stable interface, which when coupled with thermodynamic conditions may help in the manufacturing, deterioration, and reliability of the system.

  17. Mixed Matrix Carbon Molecular Sieve and Alumina (CMS-Al2O3) Membranes

    PubMed Central

    Song, Yingjun; Wang, David K.; Birkett, Greg; Martens, Wayde; Duke, Mikel C.; Smart, Simon; Diniz da Costa, João C.

    2016-01-01

    This work shows mixed matrix inorganic membranes prepared by the vacuum-assisted impregnation method, where phenolic resin precursors filled the pore of α-alumina substrates. Upon carbonisation, the phenolic resin decomposed into several fragments derived from the backbone of the resin matrix. The final stages of decomposition (>650 °C) led to a formation of carbon molecular sieve (CMS) structures, reaching the lowest average pore sizes of ~5 Å at carbonisation temperatures of 700 °C. The combination of vacuum-assisted impregnation and carbonisation led to the formation of mixed matrix of CMS and α-alumina particles (CMS-Al2O3) in a single membrane. These membranes were tested for pervaporative desalination and gave very high water fluxes of up to 25 kg m−2 h−1 for seawater (NaCl 3.5 wt%) at 75 °C. Salt rejection was also very high varying between 93–99% depending on temperature and feed salt concentration. Interestingly, the water fluxes remained almost constant and were not affected as feed salt concentration increased from 0.3, 1 and 3.5 wt%. PMID:27469389

  18. Chemical reactions and morphological stability at the Cu/Al2O3 interface.

    PubMed

    Scheu, C; Klein, S; Tomsia, A P; Rühle, M

    2002-10-01

    The microstructures of diffusion-bonded Cu/(0001)Al2O3 bicrystals annealed at 1000 degrees C at oxygen partial pressures of 0.02 or 32 Pa have been studied with various microscopy techniques ranging from optical microscopy to high-resolution transmission electron microscopy. The studies revealed that for both oxygen partial pressures a 20-35 nm thick interfacial CuAlO2 layer formed, which crystallises in the rhombohedral structure. However, the CuAlO2 layer is not continuous, but interrupted by many pores. In the samples annealed in the higher oxygen partial pressure an additional reaction phase with a needle-like structure was observed. The needles are several millimetres long, approximately 10 microm wide and approximately 1 microm thick. They consist of CuAlO2 with alternating rhombohedral and hexagonal structures. Solid-state contact angle measurements were performed to derive values for the work of adhesion. The results show that the adhesion is twice as good for the annealed specimen compared to the as-bonded sample. PMID:12366593

  19. ENERGY CONVERSION FOR THE TRANSITION FROM Al TO γ-Al2O3 NANOPARTICLES

    NASA Astrophysics Data System (ADS)

    Wang, Shulin; Li, Shengjuan; Xu, Bo; Jian, Dunliang; Zhu, Yufang

    2013-07-01

    We have successfully converted large volume Al particles into γ-Al2O3 nanostructures by vibration milling at room temperature and successive treatment. We show that there exist special relationships among stacking fault energy (SFE), strain energy (SRE), and surface energy (SE) of the materials, including interdependence, intercompetition, and interconversion during the phase transition. SFE and SRE perform the same changing tendency, while SE just does the opposite. However, it is not the particle size but the energy state that determines the reactivity of the materials. And it is the SE that can directly determine the physical chemical reaction and the conversion into the end product rather than SFE and SRE. When SE goes up, the material reactivity and the product yield will be enhanced; and when SE goes down, the reaction and the product yield will decay. However, the state of SE depends closely on the change tendency of the SFE and SRE. That is, when SFE and SRE goes up, SE will goes down; if SFE and SRE goes down, SE will goes up. It seems that energy conservation law may be followed in a sense in the particle system if the external input keeps constant. The work may be significant for energy conversion in nano-scale and mechanosynthesis of oxide nanoparticles.

  20. Development of lasers optimized for pumping Ti:Al2O3 lasers

    NASA Technical Reports Server (NTRS)

    Rines, Glen A.; Schwarz, Richard A.

    1994-01-01

    Laboratory demonstrations that were completed included: (1) an all-solid-state, broadly tunable, single-frequency, Ti:Al2O3 master oscillator, and (2) a technique for obtaining 'long' (nominally 100- to 200-ns FWHM) laser pulses from a Q-switched, Nd oscillator at energy levels commensurate with straightforward amplification to the joule level. A diode-laser-pumped, Nd:YLF laser with intracavity SHG was designed, constructed, and evaluated. With this laser greater than 0.9 W of CW, output power at 523.5 nm with 10 W of diode-laser pump power delivered to the Nd:YLF crystal was obtained. With this laser as a pump source, for the first time, to our knowledge, an all solid-state, single frequency, Ti:Al203 laser with sufficient output power to injection seed a high-energy oscillator over a 20-nm bandwidth was demonstrated. The pulsed laser work succeeded in demonstrating pulse-stretching in a Q-switched Nd:YAG oscillator. Pulse energies greater than 50-mJ were obtained in pulses with 100- to 200-ns pulsewidths (FWHM).

  1. Wet foams hydrophobized by amphiphiles to give Al2O3 porous ceramics

    NASA Astrophysics Data System (ADS)

    Pokhrel, Ashish; Park, Jung Gyu; Kim, Ik Jin

    2012-05-01

    Wet chemical method to prepare ceramic foams with antecedent stability using inorganic particles (Al2O3,SiO2 etc.) which are in situ hydrophobized upon adsorption of short-chain amphiphilic molecules in the wet state and heightened mechanical property in the sintered state was developed. These wet foams are stable over several days and show no bubble coarsening nor drainage or creaming. This long-term stability is achieved through the irreversible adsorption of partially hydrophobized colloidal particles to the air-water interface using short-chain amphiphiles to in situ modify the wetting behavior of the particle surface based on the observations of Pickering emulsions. As a result, the suspension is foamed homogeneously throughout its entire volume and porous bulk materials can be produced upon drying and sintering. Wet foams featuring average bubble sizes between 30 and 300μm and sintered foams with porosity from 50 to 85% were obtained by adjusting the amphiphile - particle concentration, and additives in the initial suspension. Cells were mostly closed with an average size of approximately 150 μm. Single cells were separated by walls with minimum thicknesses of 1-3 μm.

  2. Athermal fading of luminescence in Al2 O3 ceramic substrates

    NASA Astrophysics Data System (ADS)

    Terry, Ian; Kouroukla, Eftychia; Bailiff, Ian K.

    2015-03-01

    Retrospective dosimetry aims to reconstruct ionising radiation dose to populations following a radiological incident using materials not designed for that purpose. Sintered alumina ceramic can function as a dosimeter with its luminescence properties and related trapped charge storage mechanism. Its widespread use as a substrate in surface mount devices and incorporation in devices such as mobile phones make it a ubiquitous potential dosimeter. We investigated the optically (OSL) and thermally (TL) stimulated luminescence properties of sintered alumina substrates. In contrast to their single crystal analogue developed for personal dosimetry, Al2O3:C, the substrates exhibit a significant loss of trapped charge (fading) within hours following irradiation at RT that seriously limits their utility for dosimetry over an extended timescale. The fading rates of OSL and TL signals of 0402 resistors were analysed under various storage conditions (time and temperature), complemented by a study of their microstructure. The results support a model of athermal loss of trapped charge due to electron tunnelling from trapping states; this contrasting behaviour is attributed to a physical modification of the trap environment arising from the manufacturing process.

  3. Thermal conductivity and viscosity measurements of ethylene glycol-based Al2O3 nanofluids.

    PubMed

    Pastoriza-Gallego, María José; Lugo, Luis; Legido, José Luis; Piñeiro, Manuel M

    2011-03-15

    The dispersion and stability of nanofluids obtained by dispersing Al2O3 nanoparticles in ethylene glycol have been analyzed at several concentrations up to 25% in mass fraction. The thermal conductivity and viscosity were experimentally determined at temperatures ranging from 283.15 K to 323.15 K using an apparatus based on the hot-wire method and a rotational viscometer, respectively. It has been found that both thermal conductivity and viscosity increase with the concentration of nanoparticles, whereas when the temperature increases the viscosity diminishes and the thermal conductivity rises. Measured enhancements on thermal conductivity (up to 19%) compare well with literature values when available. New viscosity experimental data yield values more than twice larger than the base fluid. The influence of particle size on viscosity has been also studied, finding large differences that must be taken into account for any practical application. These experimental results were compared with some theoretical models, as those of Maxwell-Hamilton and Crosser for thermal conductivity and Krieger and Dougherty for viscosity.

  4. Absorption and photoluminescence study of Al 2O 3 single crystal irradiated with fast neutrons

    NASA Astrophysics Data System (ADS)

    Izerrouken, M.; Benyahia, T.

    2010-10-01

    Colour centers formation in Al 2O 3 by reactor neutrons were investigated by optical measurements (absorption and photoluminescence). The irradiation's were performed at 40 °C, up to fast neutron ( E n > 1.2 MeV) fluence of 1.4 × 10 18 n cm -2. After irradiation the coloration of the sample increases with the neutron fluence and absorption band at about 203, 255, 300, 357 and 450 nm appear in the UV-visible spectrum. The evolution of each absorption bands as a function of fluence and annealing temperature is presented and discussed. The results indicate that at higher fluence and above 350 °C the F + center starts to aggregate to F center clusters (F 2, F 2+ and F22+). These aggregates disappear completely above 650 °C whereas the F and F + centers persist even after annealing at 900 °C. It is clear also from the results that the absorption band at 300 nm is due to the contribution of both F 2 center and interstitial Ali+ ions.

  5. Molten Al and (0001) α-Al2O3 Single Crystal: Interface Stability

    NASA Astrophysics Data System (ADS)

    Aguilar-santillan, Joaquin

    2016-08-01

    The roughness on the "c"-plane (0001) sapphire single crystal reduces wetting of molten aluminum under Ar gas (99.999 pct) and PO2 10-15 Pa from 1073 K to 1473 K (800 °C to 1200 °C). The contact angle effect was partially understood by the roughness factor, R; however, the interfacial phenomenon involving this effect is yet a topic to study as it also depends, between other things, on the shape of droplet and the relationship to its substrate. The theory explains that the surface tension of liquid aluminum obtained by the sessile drop test can be determined just when a substrate is polished or free of any surface imperfection. However, roughness of sapphire (0001) surface promotes an apparent surface tension that exhibits different trends of wetting to that proposed in previous studies. This property adds to the interfacial wetting phenomena obtained from the Al-Al2O3 couple system and provides answers for contact angle trends toward a much more stable interface, which when coupled with thermodynamic conditions may help in the manufacturing, deterioration, and reliability of the system.

  6. Experimental Study of the Impact Damage on AN Al2O3-COATED Glass Under Stress

    NASA Astrophysics Data System (ADS)

    Suh, Chang-Min; Kim, Sung-Ho; Suh, Duck-Young

    The impact damage of an Al2O3-coated soda-lime glass under tensile and compressive stress conditions was investigated by an impact test using a steel ball (2mm dia.). The size of the glass specimens was 40×40×5(mm). In order to change the porosity percent of each specimen, the target distance was set at 120mm and 70mm. Also, the effect of the thickness of the coating layer was shown by two amounts (100 μm and 50 μm). The velocity of the steel balls was set between 30 and 60m/s. After the impact test, the crack patterns and lengths were measured using a stereo-microscope. The tensile and compressive specimens were prepared by inflation and deflation of air pressure within a pressure vessel. It was confirmed that the crack length of the glass under tensile stress was longer than that of glass under compressive stress. Also, the optimum conditions were a target distance of 70mm and 100 μm of a coating thickness, thus resulting in a minimization of porosity percent and area.

  7. Mixed Matrix Carbon Molecular Sieve and Alumina (CMS-Al2O3) Membranes.

    PubMed

    Song, Yingjun; Wang, David K; Birkett, Greg; Martens, Wayde; Duke, Mikel C; Smart, Simon; Diniz da Costa, João C

    2016-01-01

    This work shows mixed matrix inorganic membranes prepared by the vacuum-assisted impregnation method, where phenolic resin precursors filled the pore of α-alumina substrates. Upon carbonisation, the phenolic resin decomposed into several fragments derived from the backbone of the resin matrix. The final stages of decomposition (>650 °C) led to a formation of carbon molecular sieve (CMS) structures, reaching the lowest average pore sizes of ~5 Å at carbonisation temperatures of 700 °C. The combination of vacuum-assisted impregnation and carbonisation led to the formation of mixed matrix of CMS and α-alumina particles (CMS-Al2O3) in a single membrane. These membranes were tested for pervaporative desalination and gave very high water fluxes of up to 25 kg m(-2) h(-1) for seawater (NaCl 3.5 wt%) at 75 °C. Salt rejection was also very high varying between 93-99% depending on temperature and feed salt concentration. Interestingly, the water fluxes remained almost constant and were not affected as feed salt concentration increased from 0.3, 1 and 3.5 wt%. PMID:27469389

  8. Dynamic Friction Performance of a Pneumatic Cylinder with Al2O3 Film on Cylinder Surface.

    PubMed

    Chang, Ho; Lan, Chou-Wei; Wang, Hao-Xian

    2015-11-01

    A friction force system is proposed for accurately measuring friction force and motion properties produced by reciprocating motion of piston in a pneumatic cylinder. In this study, the proposed system is used to measure the effects of lubricating greases of different viscosities on the friction properties of pneumatic cylinder, and improvement of stick-slip motion for the cylinder bore by anodizing processes. A servo motor-driven ball screw is used to drive the pneumatic cylinder to be tested and to measure the change in friction force of the pneumatic cylinder. Experimental results show, that under similar test conditions, the lubricating grease with viscosity VG100 is best suited for measuring reciprocating motion of the piston of pneumatic cylinder. The wear experiment showed that, in the Al2O3 film obtained at a preset voltage 40 V in the anodic process, the friction coefficient and hardness decreased by 55% and increased by 274% respectively, thus achieving a good tribology and wear resistance. Additionally, the amplitude variation in the friction force of the pneumatic cylinder wall that received the anodizing treatment was substantially reduced. Additionally, the stick-slip motion of the pneumatic cylinder during low-speed motion was substantially improved. PMID:26726680

  9. Combustion synthesis of ceramic-metal composite materials - The TiC-Al2O3-Al system

    NASA Technical Reports Server (NTRS)

    Feng, H. J.; Moore, John J.; Wirth, D. G.

    1992-01-01

    Combustion synthesis was applied for producing ceramic-metal composites with reduced levels of porosity, by allowing an excess amount of liquid metal, generated by the exothermic reaction during synthesis, to infiltrate the pores. It is shown that this method, when applied to TiC-Al2O3 system, led to a decreased level of porosity in the resulting TiC-Al2O3-Al product, as compared with that of TiC-Al2O3 system. This in situ procedure is more efficient than the two-stage conventional processes (i.e., sintering followed by liquid metal infiltration), although there are limitations with respect to total penetration of the liquid metal and maintaining a stable propagation of the combustion reaction.

  10. Influence of calcination temperature on the surface area of submicron-sized Al2O3 electrospun fibers

    NASA Astrophysics Data System (ADS)

    Shin, Hyeon Ung; Ramsier, Rex D.; Chase, George G.

    2016-03-01

    Submicron-sized Al2O3 fibers were formed by calcination of electrospun aluminum acetate/PVP composite fibers. At 650 °C, the fibers were amorphous. As the calcination temperature increased to 750 °C, the fibers transitioned from amorphous to 49 % crystalline gamma phase Al2O3. The crystallinity further increased with calcination temperature to 80 % gamma Al2O3 at 950 °C, but decreased above 950 °C as the crystal structure began to change to alpha phase. The fiber diameters tended to decrease as calcination temperature increased to 950 °C but increased as the alpha phase was formed at temperatures above 950 °C. Surface areas as measured by BET decreased as gamma phase crystallinity increased. Further decrease in surface area as the gamma phase crystal structure transitioned to alpha phase indicated changing internal pore structures of the fibers.

  11. What determines the interfacial configuration of Nb/Al2O3 and Nb/MgO interface

    NASA Astrophysics Data System (ADS)

    Du, J. L.; Fang, Y.; Fu, E. G.; Ding, X.; Yu, K. Y.; Wang, Y. G.; Wang, Y. Q.; Baldwin, J. K.; Wang, P. P.; Bai, Q.

    2016-10-01

    Nb films are deposited on single crystal Al2O3 (110) and MgO(111) substrates by e-beam evaporation technique. Structure of Nb films and orientation relationships (ORs) of Nb/Al2O3 and Nb/MgO interface are studied and compared by the combination of experiments and simulations. The experiments show that the Nb films obtain strong (110) texture, and the Nb film on Al2O3(110) substrate shows a higher crystalline quality than that on MgO(111) substrate. First principle calculations show that both the lattice mismatch and the strength of interface bonding play major roles in determining the crystalline perfection of Nb films and ORs between Nb films and single crystal ceramic substrates. The fundamental mechanisms for forming the interfacial configuration in terms of the lattice mismatch and the strength of interface bonding are discussed.

  12. Energy-band diagram configuration of Al2O3/oxygen-terminated p-diamond metal-oxide-semiconductor

    NASA Astrophysics Data System (ADS)

    Maréchal, A.; Aoukar, M.; Vallée, C.; Rivière, C.; Eon, D.; Pernot, J.; Gheeraert, E.

    2015-10-01

    Diamond metal-oxide-semiconductor capacitors were prepared using atomic layer deposition at 250 °C of Al2O3 on oxygen-terminated boron doped (001) diamond. Their electrical properties were investigated in terms of capacitance and current versus voltage measurements. Performing X-ray photoelectron spectroscopy based on the measured core level energies and valence band maxima, the interfacial energy band diagram configuration of the Al2O3/O-diamond is established. The band diagram alignment is concluded to be of type I with valence band offset Δ E v of 1.34 ± 0.2 eV and conduction band offset Δ E c of 0.56 ± 0.2 eV considering an Al2O3 energy band gap of 7.4 eV. The agreement with electrical measurement and the ability to perform a MOS transistor are discussed.

  13. CO2 gas detection properties of a TIO2/Al2O3 heterostructure under UV light irradiation

    NASA Astrophysics Data System (ADS)

    Karaduman, Irmak; Demir, Mehmet; Yıldız, Dilber Esra; Acar, Selim

    2015-05-01

    Al/TiO2/p-Si and Al/TİO2/Al2O3/p-Si samples were prepared using the atomic layer deposition method (ALD) and their gas sensing properties were investigated. The electrical properties of the samples were studied using a two probe method in the temperature range 25-230 °C and at room temperature UV conditions. The TiO2/Al2O3 heterojunction sample exhibited an excellent gas sensing response to CO2 gas at room temperature and improved the effect of UV light irradiation. The results showed that heterostructures helped to improve the gas sensor properties, affected the sensing at room temperature and thus guided the design of photocatalysts. The TiO2/Al2O3 heterojunction prepared using this method can be used as a material for semiconductor gas sensors detecting poisonous gases like CO2 at room temperature with high sensitivity and selectivity.

  14. HfO2/Al2O3 multilayer for RRAM arrays: a technique to improve tail-bit retention.

    PubMed

    Huang, Xueyao; Wu, Huaqiang; Bin Gao; Sekar, Deepak C; Dai, Lingjun; Kellam, Mark; Bronner, Gary; Deng, Ning; Qian, He

    2016-09-30

    In this work, the HfO2/Al2O3 multilayer structure is applied for RRAM arrays. Compared to HfO2 RRAM, the data retention failure of tail bits is suppressed significantly, especially for the high resistance state (HRS). The retention of tail bits is studied in detail by temperature simulation and crystallization analysis. We attribute the improvement of tail-bit retention to the decreased oxygen ion diffusivity caused by the Al2O3 layer. Furthermore, the HfO2/Al2O3 multilayer structure exhibits higher crystallization temperature, thus leading to fewer grain boundaries around the filament during the operations. With fewer grain boundaries, oxygen ion diffusion is suppressed, leading to fewer tail bits and better retention. PMID:27537613

  15. Estimation Model for Electrical Conductivity of CaF2-CaO-Al2O3 Slags

    NASA Astrophysics Data System (ADS)

    Shi, Guan-yong; Zhang, Ting-an; Dou, Zhi-he; Niu, Li-ping

    2016-09-01

    Electrical conductivity is one of the most important properties of molten slags. It has an important influence on process parameter selection of the electroslag remelting process. In the present work, a new model for estimating electrical conductivity of high-temperature slags has been proposed via calculating the conductivity by electrical conductivity of pure substances and interaction parameters between the different components in the slag has been proposed. In this model, the Arrhenius law is used to describe the relationship between electrical conductivity and temperature of slags. This model has been successfully applied to the CaF2-Al2O3, CaF2-CaO, and CaO-Al2O3, as well as CaF2-CaO-Al2O3 systems, and the calculated results are in good agreement with the measured values.

  16. A study of the effect of Al2O3 reflector on response function of NaI(Tl) detector

    NASA Astrophysics Data System (ADS)

    Tam, Hoang Duc; Chuong, Huynh Dinh; Thanh, Tran Thien; Van Tao, Chau

    2016-08-01

    This study aims to assess the effect of Al2O3 reflector surrounding the NaI(Tl) crystal on the detector response function, based on Monte Carlo simulation, which can verify the precise model of the NaI(Tl) detector. The method used in determining the suitable thickness of Al2O3 reflector is to compare the calculated and experimental values of full-energy peak efficiency. The results show that the Al2O3 reflector should have a thickness of 0.8-1.2 mm for the maximum deviation between the experimental and simulated efficiency of 3.2% at all concerning energies. In addition, the obtained results are in good agreement with the response function of simulation and experimental spectra.

  17. What determines the interfacial configuration of Nb/Al2O3 and Nb/MgO interface

    PubMed Central

    Du, J. L.; Fang, Y.; Fu, E. G.; Ding, X.; Yu, K. Y.; Wang, Y. G.; Wang, Y. Q.; Baldwin, J. K.; Wang, P. P.; Bai, Q.

    2016-01-01

    Nb films are deposited on single crystal Al2O3 (110) and MgO(111) substrates by e-beam evaporation technique. Structure of Nb films and orientation relationships (ORs) of Nb/Al2O3 and Nb/MgO interface are studied and compared by the combination of experiments and simulations. The experiments show that the Nb films obtain strong (110) texture, and the Nb film on Al2O3(110) substrate shows a higher crystalline quality than that on MgO(111) substrate. First principle calculations show that both the lattice mismatch and the strength of interface bonding play major roles in determining the crystalline perfection of Nb films and ORs between Nb films and single crystal ceramic substrates. The fundamental mechanisms for forming the interfacial configuration in terms of the lattice mismatch and the strength of interface bonding are discussed. PMID:27698458

  18. Porous α-Al2O3 thermal barrier coatings with dispersed Pt particles prepared by cathode plasma electrolytic deposition

    NASA Astrophysics Data System (ADS)

    Wang, Peng; He, Ye-dong; Deng, Shun-jie; Zhang, Jin

    2016-01-01

    Porous α-Al2O3 thermal barrier coatings (TBCs) containing dispersed Pt particles were prepared by cathode plasma electrolytic deposition (CPED). The influence of the Pt particles on the microstructure of the coatings and the CPED process were studied. The prepared coatings were mainly composed of α-Al2O3. The average thickness of the coatings was approximately 100 μm. Such single-layer TBCs exhibited not only excellent high-temperature cyclic oxidation and spallation resistance, but also good thermal insulation properties. Porous α-Al2O3 TBCs inhibit further oxidation of alloy substrates because of their extremely low oxygen diffusion rate, provide good thermal insulation because of their porous structure, and exhibit excellent mechanical properties because of the toughening effect of the Pt particles and because of stress relaxation induced by deformation of the porous structure.

  19. Effect of calcination time on NiAl-Al2O3 using gel combustion synthesis method

    NASA Astrophysics Data System (ADS)

    Afandi, N. F.; Manap, A.; Yusof, S. N. A.; Salim, M. A.; Azim, M. Al.; Othman, S. Z.; Pauzi, N. I. M.; Omar, Nooririnah; Misran, H.

    2015-07-01

    This study was conducted in order to investigate the effect of calcination time on phase and microstructural characteristics of intermetallic matric composite (IMC), NiAl-Al2O3 powder. This powder was synthesized using gel combustion method with octyl alcohol as fuel. Upon completion of the combustion process, the loose powder was calcined at 1050°C for 1, 2 and 4 hours and characterized using XRD, FESEM and TEM. The crystallite size was calculated to be in the range of 29-30 nm. It was found that NiAl-Al2O3 exhibits high crystalline structure after calcination for 4 hours. Furthermore, longer calcination time also cause growth of the particle size. Findings indicate that high crystalline nanostructured NiAl-Al2O3 powder consisting of submicron particles can be successfully produced using gel combustion synthesis with longer calcination time.

  20. Al2O3 and TiO2 entrapped ABS membranes: Preparation, characterization and study of irradiation effect

    NASA Astrophysics Data System (ADS)

    Kamelian, Fariba Sadat; Mousavi, Seyed Mahmoud; Ahmadpour, Ali

    2015-12-01

    The present study focuses on the aluminum oxide (Al2O3) and titanium oxide (TiO2) entrapped acrylonitrile-butadiene-styrene (ABS) membranes prepared from phase inversion method. The effect of Al2O3 and TiO2 nanoparticles on the hydrophilicity, tensile strength, thermal stability, permeate flux, and rejection of wastewater pollution indices was investigated. Some of the membranes were exposed to ultraviolet (UV) irradiation. Al2O3 and TiO2 nanoparticles generally improved performance of the membranes. Thermal stability and tensile strength of the membranes were also enhanced in the presence of the nanoparticles. Increasing the nanoparticles concentration increased viscosity of the casting solutions. The UV irradiated membranes had better performance than the non-irradiated ones.

  1. Quantum Chemical Simulation of Carbon Nanotube Nucleation on Al2O3 Catalysts via CH4 Chemical Vapor Deposition.

    PubMed

    Page, Alister J; Saha, Supriya; Li, Hai-Bei; Irle, Stephan; Morokuma, Keiji

    2015-07-29

    We present quantum chemical simulations demonstrating how single-walled carbon nanotubes (SWCNTs) form, or "nucleate", on the surface of Al2O3 nanoparticles during chemical vapor deposition (CVD) using CH4. SWCNT nucleation proceeds via the formation of extended polyyne chains that only interact with the catalyst surface at one or both ends. Consequently, SWCNT nucleation is not a surface-mediated process. We demonstrate that this unusual nucleation sequence is due to two factors. First, the π interaction between graphitic carbon and Al2O3 is extremely weak, such that graphitic carbon is expected to desorb at typical CVD temperatures. Second, hydrogen present at the catalyst surface actively passivates dangling carbon bonds, preventing a surface-mediated nucleation mechanism. The simulations reveal hydrogen's reactive chemical pathways during SWCNT nucleation and that the manner in which SWCNTs form on Al2O3 is fundamentally different from that observed using "traditional" transition metal catalysts. PMID:26148208

  2. HfO2/Al2O3 multilayer for RRAM arrays: a technique to improve tail-bit retention

    NASA Astrophysics Data System (ADS)

    Huang, Xueyao; Wu, Huaqiang; Gao, Bin; Sekar, Deepak C.; Dai, Lingjun; Kellam, Mark; Bronner, Gary; Deng, Ning; Qian, He

    2016-09-01

    In this work, the HfO2/Al2O3 multilayer structure is applied for RRAM arrays. Compared to HfO2 RRAM, the data retention failure of tail bits is suppressed significantly, especially for the high resistance state (HRS). The retention of tail bits is studied in detail by temperature simulation and crystallization analysis. We attribute the improvement of tail-bit retention to the decreased oxygen ion diffusivity caused by the Al2O3 layer. Furthermore, the HfO2/Al2O3 multilayer structure exhibits higher crystallization temperature, thus leading to fewer grain boundaries around the filament during the operations. With fewer grain boundaries, oxygen ion diffusion is suppressed, leading to fewer tail bits and better retention.

  3. Lipid bilayer coated Al2O3 nanopore sensors: towards a hybrid biological solid-state nanopore

    PubMed Central

    Venkatesan, Bala Murali; Polans, James; Comer, Jeffrey; Sridhar, Supriya; Wendell, David; Aksimentiev, Aleksei

    2011-01-01

    Solid-state nanopore sensors are highly versatile platforms for the rapid, label-free electrical detection and analysis of single molecules, applicable to next generation DNA sequencing. The versatility of this technology allows for both large scale device integration and interfacing with biological systems. Here we report on the development of a hybrid biological solid-state nanopore platform that incorporates a highly mobile lipid bilayer on a single solid-state Al2O3 nanopore sensor, for the potential reconstitution of ion channels and biological nanopores. Such a system seeks to combine the superior electrical, thermal, and mechanical stability of Al2O3 solid-state nanopores with the chemical specificity of biological nanopores. Bilayers on Al2O3 exhibit higher diffusivity than those formed on TiO2 and SiO2 substrates, attributed to the presence of a thick hydration layer on Al2O3, a key requirement to preserving the biological functionality of reconstituted membrane proteins. Molecular dynamics simulations demonstrate that the electrostatic repulsion between the dipole of the DOPC headgroup and the positively charged Al2O3 surface may be responsible for the enhanced thickness of this hydration layer. Lipid bilayer coated Al2O3 nanopore sensors exhibit excellent electrical properties and enhanced mechanical stability (GΩ seals for over 50 h), making this technology ideal for use in ion channel electrophysiology, the screening of ion channel active drugs and future integration with biological nanopores such as α-hemolysin and MspA for rapid single molecule DNA sequencing. This technology can find broad application in bio-nanotechnology. PMID:21487665

  4. Energies of Electronic States of Ni (II) Ion in NiO-Al2O3 Catalyst Prepared by Impregnation

    SciTech Connect

    Obadovic, D. Z.; Kiurski, J.; Marinkovic-Neducin, R. P.

    2007-04-23

    The behavior of NiO-Al2O3 catalysts is strongly dependent on the preparation method, as well as on pretreatment conditions. In the present work we investigated the influences of Ni(II) ion on NiO-Al2O3 catalysts properties due to the preparation by impregnation method. Based on experimental diffuse reflectance spectroscopy (DRS) data of electronic d-d transitions of Ni (II) promoter ion the energies of electronic states in spinel-like structure were calculated, and the most probable scheme of molecular orbital have been proposed.

  5. Energies of Electronic States of Ni (II) Ion in NiO-Al2O3 Catalyst Prepared by Impregnation

    NASA Astrophysics Data System (ADS)

    Obadović, D. Ž.; Kiurski, J.; Marinković-Nedučin, R. P.

    2007-04-01

    The behavior of NiO-Al2O3 catalysts is strongly dependent on the preparation method, as well as on pretreatment conditions. In the present work we investigated the influences of Ni(II) ion on NiO-Al2O3 catalysts properties due to the preparation by impregnation method. Based on experimental diffuse reflectance spectroscopy (DRS) data of electronic d-d transitions of Ni (II) promoter ion the energies of electronic states in spinel-like structure were calculated, and the most probable scheme of molecular orbital have been proposed.

  6. Luminescence and structural properties of germanium nanocrystals formed by annealing multilayer GeOx/Al2O3 nanostructures

    NASA Astrophysics Data System (ADS)

    Grachev, D. A.; Garakhin, S. A.; Belolipetsky, A. V.; Nezhdanov, A. V.; Ershov, A. V.

    2016-08-01

    By Raman scattering, luminescence, and IR-absorption spectroscopy multilayer nanoperiodic structures Ge/Al2O3 & GeOx/Al2O3 have been investigated. The samples have been obtained by the physical evaporation; their properties have been varied by changing the layer thicknesses (2-20 nm) and annealing temperature (500-1000 °C). It is found that germanium nanocrystals are formed in the temperature range of 500-800 °C and exhibit intense size-depend photoluminescence at 1.2 eV and 1.8-2.0 eV.

  7. One-nanometer-precision control of Al(2)O(3) nanoshells through a solution-based synthesis route.

    PubMed

    Zhang, Wei; Chi, Zi-Xiang; Mao, Wen-Xin; Lv, Rong-Wen; Cao, An-Min; Wan, Li-Jun

    2014-11-17

    Forming uniform metal oxide nanocoatings is a well-known challenge in the construction of core-shell type nanomaterials. Herein, by using buffer solution as a specific reaction medium, we demonstrate the possibility to grow thin nanoshells of metal oxides, typically Al2 O3 , on different kinds of core materials, forming a uniform surface-coating layer with thicknesses achieving one nanometer precision. The application of this methodology for the surface modification of LiCoO2 shows that a thin nanoshell of Al2 O3 can be readily tuned on the surface for an optimized battery performance.

  8. Kinetics of NiO and NiCl2 Hydrogen Reduction as Precursors and Properties of Produced Ni/Al2O3 and Ni-Pd/Al2O3 Catalysts

    PubMed Central

    Sokić, Miroslav; Kamberović, Željko; Nikolić, Vesna; Marković, Branislav; Korać, Marija; Anđić, Zoran; Gavrilovski, Milorad

    2015-01-01

    The objects of this investigation were the comparative kinetic analysis of the NiO and NiCl2 reduction by hydrogen during an induction period and elimination of the calcination during the synthesis of Ni/Al2O3 catalysts. The effect of temperature and time on NiO and NiCl2 reduction degrees was studied. Avrami I equation was selected as the most favorable kinetic model and used to determine activation energy of the NiO and NiCl2 reduction for the investigated temperature range (623–923 K) and time intervals (1–5 minutes). The investigation enabled reaching conclusions about the reaction ability and rate of the reduction processes. Afterward, Ni/Al2O3 catalysts were obtained by using oxide and chloride precursor for Ni. The catalysts were supported on alumina-based foam and prepared via aerosol route. Properties of the samples before and after low-temperature hydrogen reduction (633 K) were compared. Obtained results indicated that the synthesis of Ni/Al2O3 catalysts can be more efficient if chloride precursor for Ni is directly reduced by hydrogen during the synthesis process, without the calcination step. In addition, Ni-Pd/Al2O3 catalysts with different metal content were prepared by using chloride precursors. Lower reduction temperature was utilized and the chlorides were almost completely reduced at 533 K. PMID:25789335

  9. Gate dielectric scaling in MOSFETs device

    NASA Astrophysics Data System (ADS)

    Jing, K. Hui; Arshad, M. K. Md.; Huda, A. R. N.; Ruslinda, A. R.; Gopinath, Subash C. B.; M. Nuzaihan M., N.; Ayub, R. M.; Fathil, M. F. M.; Othman, Noraini; Hashim, U.

    2016-07-01

    Metal-Oxide-Semiconductor Field Effect Transistor (MOSFET) is a basic type of transistor to be used as a switch since 1959. Since then, the successful of MOSFET is due to good properties between silicon and silicon dioxide. The reduction of silicon oxide thickness provide further enhancement in device performance. At 90 and 65 nm technology nodes, the gate oxide could not be scaled anymore due to the direct tunneling effect resulting significant increase of leakage current. At 45 nm the high-k + metal gate has been introduced. Recently, the ferroelectric effect material is introduced which significantly reduce the gate leakage current. This paper review the evolution of gate dielectric scaling from the era of silicon dioxide to high-k + metal gate and ferroelectric effect material.

  10. Toughness enhancement in graphene nanoplatelet/SiC reinforced Al2O3 ceramic hybrid nanocomposites.

    PubMed

    Ahmad, Iftikhar; Islam, Mohammad; Subhani, Tayyab; Zhu, Yanqiu

    2016-10-21

    This paper elucidates the effect of silicon carbide nanoparticles (SiCNP) and graphene nanoplatelets (GNPs), on their own and together, on the densification behavior and fracture toughness of alumina (Al2O3) ceramic matrix. This was investigated by using the high-frequency induction heat sintering (HFIHS) process. While the addition of each nanostructure caused varying degrees of grain refinement and enhancement of mechanical properties, the incorporation of as little as 0.5 wt.% GNPs along with 5.0 wt.% SiCNP promoted uniform dispersion of the latter due to the lateral surface area of the graphene nanosheets with their two-dimensional morphology. There was an associated reduction in grain size from 1500 to 300 nm upon the addition of both types of nanoscale reinforcements. Extensive electron microscopy of the as-produced nanocomposites indicated the presence of SiCNP within, as well as at, the grain boundary areas whereas the 2D GNPs anchored between neighboring grains. Fractography of the samples revealed a transition from a mixed intergranular/transgranular mode for SiCNP or GNP-reinforced nanocomposites to transgranular fracture mode for the hybrid nanocomposites with improvements in fracture toughness and microhardness by 160 and 27%, respectively, largely due to the synergic role of the nanostructured reinforcements and their distinctly different toughening mechanisms. A new toughening model is proposed for the hybrid nanocomposites by taking into consideration crack deflection and pull-out effects due to SiCNP and the atomic level slip-stick driven GNPs inter-layer slithering. It was found that the addition of GNPs facilitates SiCNP dispersion that subsequently develops dense, fine-grained microstructures after a short-cycle, pressure-assisted consolidation process.

  11. Toughness enhancement in graphene nanoplatelet/SiC reinforced Al2O3 ceramic hybrid nanocomposites

    NASA Astrophysics Data System (ADS)

    Ahmad, Iftikhar; Islam, Mohammad; Subhani, Tayyab; Zhu, Yanqiu

    2016-10-01

    This paper elucidates the effect of silicon carbide nanoparticles (SiCNP) and graphene nanoplatelets (GNPs), on their own and together, on the densification behavior and fracture toughness of alumina (Al2O3) ceramic matrix. This was investigated by using the high-frequency induction heat sintering (HFIHS) process. While the addition of each nanostructure caused varying degrees of grain refinement and enhancement of mechanical properties, the incorporation of as little as 0.5 wt.% GNPs along with 5.0 wt.% SiCNP promoted uniform dispersion of the latter due to the lateral surface area of the graphene nanosheets with their two-dimensional morphology. There was an associated reduction in grain size from 1500 to 300 nm upon the addition of both types of nanoscale reinforcements. Extensive electron microscopy of the as-produced nanocomposites indicated the presence of SiCNP within, as well as at, the grain boundary areas whereas the 2D GNPs anchored between neighboring grains. Fractography of the samples revealed a transition from a mixed intergranular/transgranular mode for SiCNP or GNP-reinforced nanocomposites to transgranular fracture mode for the hybrid nanocomposites with improvements in fracture toughness and microhardness by 160 and 27%, respectively, largely due to the synergic role of the nanostructured reinforcements and their distinctly different toughening mechanisms. A new toughening model is proposed for the hybrid nanocomposites by taking into consideration crack deflection and pull-out effects due to SiCNP and the atomic level slip-stick driven GNPs inter-layer slithering. It was found that the addition of GNPs facilitates SiCNP dispersion that subsequently develops dense, fine-grained microstructures after a short-cycle, pressure-assisted consolidation process.

  12. Dehydrogenation of dodecahydro-N-ethylcarbazole on Pd/Al2O3 model catalysts.

    PubMed

    Sobota, Marek; Nikiforidis, Ioannis; Amende, Max; Sanmartín Zanón, Beatriz; Staudt, Thorsten; Höfert, Oliver; Lykhach, Yaroslava; Papp, Christian; Hieringer, Wolfgang; Laurin, Mathias; Assenbaum, Daniel; Wasserscheid, Peter; Steinrück, Hans-Peter; Görling, Andreas; Libuda, Jörg

    2011-10-01

    To elucidate the dehydrogenation mechanism of dodecahydro-N-ethylcarbazole (H(12)-NEC) on supported Pd catalysts, we have performed a model study under ultra high vacuum (UHV) conditions. H(12)-NEC and its final dehydrogenation product, N-ethylcarbazole (NEC), were deposited by physical vapor deposition (PVD) at temperatures between 120 K and 520 K onto a supported model catalyst, which consisted of Pd nanoparticles grown on a well-ordered alumina film on NiAl(110). Adsorption and thermally induced surface reactions were followed by infrared reflection absorption spectroscopy (IRAS) and high-resolution X-ray photoelectron spectroscopy (HR-XPS) in combination with density functional theory (DFT) calculations. It was shown that, at 120 K, H(12)-NEC adsorbs molecularly both on the Al(2)O(3)/NiAl(110) support and on the Pd particles. Initial activation of the molecule occurs through C-H bond scission at the 8a- and 9a-positions of the carbazole skeleton at temperatures above 170 K. Dehydrogenation successively proceeds with increasing temperature. Around 350 K, breakage of one C-N bond occurs accompanied by further dehydrogenation of the carbon skeleton. The decomposition intermediates reside on the surface up to 500 K. At higher temperatures, further decay to small fragments and atomic species is observed. These species block most of the absorption sites on the Pd particles, but can be oxidatively removed by heating in oxygen at 600 K, fully restoring the original adsorption properties of the model catalyst. PMID:21953930

  13. Toughness enhancement in graphene nanoplatelet/SiC reinforced Al2O3 ceramic hybrid nanocomposites.

    PubMed

    Ahmad, Iftikhar; Islam, Mohammad; Subhani, Tayyab; Zhu, Yanqiu

    2016-10-21

    This paper elucidates the effect of silicon carbide nanoparticles (SiCNP) and graphene nanoplatelets (GNPs), on their own and together, on the densification behavior and fracture toughness of alumina (Al2O3) ceramic matrix. This was investigated by using the high-frequency induction heat sintering (HFIHS) process. While the addition of each nanostructure caused varying degrees of grain refinement and enhancement of mechanical properties, the incorporation of as little as 0.5 wt.% GNPs along with 5.0 wt.% SiCNP promoted uniform dispersion of the latter due to the lateral surface area of the graphene nanosheets with their two-dimensional morphology. There was an associated reduction in grain size from 1500 to 300 nm upon the addition of both types of nanoscale reinforcements. Extensive electron microscopy of the as-produced nanocomposites indicated the presence of SiCNP within, as well as at, the grain boundary areas whereas the 2D GNPs anchored between neighboring grains. Fractography of the samples revealed a transition from a mixed intergranular/transgranular mode for SiCNP or GNP-reinforced nanocomposites to transgranular fracture mode for the hybrid nanocomposites with improvements in fracture toughness and microhardness by 160 and 27%, respectively, largely due to the synergic role of the nanostructured reinforcements and their distinctly different toughening mechanisms. A new toughening model is proposed for the hybrid nanocomposites by taking into consideration crack deflection and pull-out effects due to SiCNP and the atomic level slip-stick driven GNPs inter-layer slithering. It was found that the addition of GNPs facilitates SiCNP dispersion that subsequently develops dense, fine-grained microstructures after a short-cycle, pressure-assisted consolidation process. PMID:27623018

  14. Catalytic oxidation of HCN over a 0.5% Pt/Al2O3 catalyst

    SciTech Connect

    Zhao, Haibo; Tonkyn, Russell G; Barlow, Stephan E; Koel, Bruce E; Peden, Charles HF

    2006-03-27

    The adsorption of HCN on, its catalytic oxidation with 6% O2 over 0.5% Pt/Al2O3, and the subsequent oxidation of strongly bound chemisorbed species upon heating were investigated. The observed N-containing products were N2O, NO and NO2, and some residual adsorbed N-containing species were oxidized to NO and NO2 during subsequent temperature programmed oxidation. Because N-atom balance could not be obtained after accounting for the quantities of each of these product species, we propose that N2 and was formed. Both the HCN conversion and the selectivity towards different N-containing products depend strongly on the reaction temperature and the composition of the reactant gas mixture. In particular, total HCN conversion reaches 95% above 250 C. Furthermore, the temperature of maximum HCN conversion to N2O is located between 200 and 250 C, while raising the reaction temperature increases the proportion of NOx in the products. The co-feeding of H2O and C3H6 had little, if any effect on the total HCN conversion, but C3H6 addition did increase the conversion to NO and decrease the conversion to NO2, perhaps due to the competing presence of adsorbed fragments of reductive C3H6. Evidence is also presented that introduction of NO and NO2 into the reactant gas mixture resulted in additional reaction pathways between these NOx species and HCN that provide for lean-NOx reduction coincident with HCN oxidation.

  15. Al2O3-ZrO2 Finely Structured Multilayer Architectures from Suspension Plasma Spraying

    NASA Astrophysics Data System (ADS)

    Tingaud, Olivier; Montavon, Ghislain; Denoirjean, Alain; Coudert, Jean-François; Rat, Vincent; Fauchais, Pierre

    2010-01-01

    Suspension plasma spraying (SPS) is an alternative to conventional atmospheric plasma spraying (APS) aiming at manufacturing thinner layers (i.e., 10-100 μm) due to the specific size of the feedstock particles, from a few tens of nanometers to a few micrometers. The staking of lamellae and particles, which present a diameter ranging from 0.1 to 2.0 μm and an average thickness from 20 to 300 nm, permits to manufacture finely structured layers. Moreover, it appears as a versatile process able to manufacture different coating architectures according to the operating parameters (suspension properties, injection configuration, plasma properties, spray distance, torch scan velocity, scanning step, etc.). However, the different parameters controlling the properties of the coating, and their interdependences, are not yet fully identified. Thus, the aim of this paper is, on the one hand, to better understand the influence of operating parameters on the coating manufacturing mechanisms (in particular, the plasma gas mixture effect) and, on the other hand, to produce Al2O3-ZrO2 finely structured layers with large varieties of architectures. For this purpose, a simple theoretical model was used to describe the plasma torch operating conditions at the nozzle exit, based on experimental data (mass enthalpy, arc current intensity, thermophysical properties of plasma forming gases, etc.) and the influences of the spray parameters were determined by mean of the study of sizes and shapes of spray beads. The results enabled then to reach a better understanding of involved phenomena and their interactions on the final coating architectures permitting to manufacture several types of microstructures.

  16. Al(2)O(3(w))-Al(2)O(3(n))-ZrO(2) (TZ-3Y)(n) multi-scale nanocomposite: an alternative for different dental applications?

    PubMed

    Nevarez-Rascon, A; Aguilar-Elguezabal, A; Orrantia, E; Bocanegra-Bernal, M H

    2010-02-01

    The influence of the addition of Al(2)O(3) whiskers (2.5wt.% up to 30wt.%) on Vickers hardness and fracture toughness in an Al(2)O(3(n))+ZrO(2) (TZ-3Y)(n) (90, 80 and 70wt.%) composite was investigated. Green compacts were obtained by uniaxial pressing at 50MPa and pressureless sintering at 1500 degrees C in air for 2h. After sintering, relative densities ranging from 75% to 97% were reached. The whiskers resisted particle rearrangement owing to the extensive sliding distances along the whisker boundaries during sintering and the high length/diameter ratios. Sintering becomes more difficult with increasing whisker content, because whiskers come into contact with each other, forming a rigid network which hinders densification. The 2.5wt.% Al(2)O(3) whiskers+27.5wt.% Al(2)O(3) nanoparticles+70wt.% TZ-3Y composite showed a hardness>13GPa and a maximum fracture toughness of 6.9MPam(-1/2), with an average grain size of 0.4+/-0.17microm. The observed crack deflection was an important mechanism in the improved fracture toughness of the composite. In addition, the grain size and residual porosity also seem to be factors in obtaining a wide range of hardness as well as fracture toughness by varying the Al(2)O(3) whiskers and ZrO(2) (TZ-3Y) content. The use of alumina-whisker-reinforced composites in dental applications could be promising for increasing hardness and fracture toughness compared with other materials. The reported values for these composites can compete with those of commercially available materials in different dental applications.

  17. Stacked Graphene-Al2O3 Nanopore Sensors for Sensitive Detection of DNA and DNA-Protein Complexes

    PubMed Central

    Venkatesan, Bala Murali; Estrada, David; Banerjee, Shouvik; Jin, Xiaozhong; Dorgan, Vincent E.; Bae, Myung-Ho; Aluru, Narayana R.; Pop, Eric; Bashir, Rashid

    2012-01-01

    We report the development of a multilayered graphene-Al2O3 nanopore platform for the sensitive detection of DNA and DNA-protein complexes. Graphene-Al2O3 nanolaminate membranes are formed by sequentially depositing layers of graphene and Al2O3 with nanopores being formed in these membranes using an electron-beam sculpting process. The resulting nanopores are highly robust, exhibit low electrical noise (significantly lower than nanopores in pure graphene), are highly sensitive to electrolyte pH at low KCl concentrations (attributed to the high buffer capacity of Al2O3) and permit the electrical biasing of the embedded graphene electrode, thereby allowing for three terminal nanopore measurements. In proof-of-principle biomolecule sensing experiments, the folded and unfolded transport of single DNA molecules and RecA coated DNA complexes could be discerned with high temporal resolution. The process described here also enables nanopore integration with new graphene based structures, including nanoribbons and nanogaps, for single molecule DNA sequencing and medical diagnostic applications. PMID:22165962

  18. Study on Viscosity of the La2O3-SiO2-Al2O3 Slag System

    NASA Astrophysics Data System (ADS)

    Deng, Yong-chun; Wu, Sheng-li; Jiang, Yin-ju; Jia, Su-qi

    2016-08-01

    The viscosities and free-running temperatures of slag in a La2O3-SiO2-Al2O3 slag system were measured using an internal rotating cylinder method. For different La2O3 mass contents (45, 50, and 55 pct) in the La2O3-SiO2-Al2O3 ternary slag, the slag viscosity and free-running temperature decreased with a decrease in SiO2 content and an increase in Al2O3 content, and decreased with an increase in La2O3 content. Minor components B2O3, FeO, and MnO could decrease the viscosity and free-running temperature of La2O3-SiO2-Al2O3 ternary slag, especially FeO, and a small amount of FeO and B2O3 had an additive effect on slag viscosity and free-running temperature reduction.

  19. High-density ordered Ag@Al2O3 nanobowl arrays in applications of surface-enhanced Raman spectroscopy

    NASA Astrophysics Data System (ADS)

    Kang, Mengyang; Zhang, Xiaoyan; Liu, Liwei; Zhou, Qingwei; Jin, Mingliang; Zhou, Guofu; Gao, Xingsen; Lu, Xubing; Zhang, Zhang; Liu, Junming

    2016-04-01

    In this paper, we demonstrate a high-performance surface-enhanced Raman scattering (SERS) substrate based on high-density ordered Ag@Al2O3 nanobowl arrays. By ion beam etching (IBE) the anodized aluminum oxide (AAO) and subsequent Ag coating, ordered Ag@Al2O3 nanobowl arrays were created on the Si substrate. Unlike the ‘hot spots’ generated between adjacent metallic nanostructures, the Ag@Al2O3 nanobowl introduced ‘hot spots’ on the metal boundary of its hemispherical cavity. Based on the analysis of SERS signals, the optimized SERS substrate of Ag@Al2O3 nanobowl arrays had both high sensitivity and large-area uniformity. A detection limit as low as 10-10 M was obtained using chemisorbed p-thiocresol (p-Tc) molecules, and the SERS signal was highly reproducible with a small standard deviation. The method opens up a new way to create highly sensitive SERS sensors with high-density ‘hot spots’, and it could play an important role in device design and corresponding biological and food safety monitoring applications.

  20. Performance characterization of CNTs and γ-Al2O3 supported cobalt catalysts in Fischer-Tropsch reaction

    NASA Astrophysics Data System (ADS)

    Ali, Sardar; Zabidi, Noor Asmawati Mohd; Subbarao, Duvvuri

    2014-10-01

    Catalysts were prepared via a wet impregnation method. Different physicochemical properties of the samples were revealed by transmission electron microscope (TEM), temperature programmed reduction (H2-TPR) and carbon dioxide desorption (CO2-desorption). Fischer-Tropsch reaction (FTS) was carried out in a fixed-bed microreactor at 220°C and 1 atm, with H2/ CO = 2v / v and space velocity, SV of 12L/g.h for 5 h. Various characterization techniques revealed that there was a stronger interaction between Co and Al2O3 support compared to that of CNTs support. CNTs support increased the reducibility and decreased Co particle size. A significant increase in % CO conversion and FTS reaction rate was observed over CNTs support compared to that of Co / Al2O3. Co/CNTs resulted in higher C5+ hydrocarbons selectivity compared to that of Co / Al2O3 catalyst. CNTs are a better support for Co compared to Al2O3.

  1. Atomic-Scale Structure of Al2O3-ZrO2 Mixed Oxides Prepared by Laser Ablation

    SciTech Connect

    Yang Xiuchun; Dubiel, M.; Hofmeister, H.; Riehemann, W.

    2007-02-02

    By means of x-ray diffractometry (XRD) and X-ray absorption fine structure spectroscopy, the phase composition and atomic structure of laser evaporated ZrO2 and ZrO2-Al2O3 nanopowders have been studied. The results indicate that pure ZrO2 exists in the form of tetragonal structure, Al2O3 doped ZrO2 nanoparticles, however, have cubic structure. Compared to bulk tetragonal ZrO2, pure tetragonal ZrO2 nanoparticles have a shorter Zr-O- and Zr-Zr shell, indicating that the lattice contracts with decreasing particle size. For Al2O3 doped ZrO2 solid solution, the distances of first Zr-O and Zr-Zr (Al) coordination decrease with increasing solid solubility. The disorder degree of the ZrO2 lattice increases with increasing solid solubility. The coevaporated ZrO2-Al2O3 is quickly solidified into amorphous phase when it is ablated in a higher pressure. The amorphous phase contains Zr-O-Zr (Al) clusters and has shorter Zr-O distance and tower Zr-O coordination number.

  2. Towards advanced structural analysis of iron oxide clusters on the surface of γ-Al2O3 using EXAFS

    NASA Astrophysics Data System (ADS)

    Boubnov, Alexey; Roppertz, Andreas; Kundrat, Matthew D.; Mangold, Stefan; Reznik, Boris; Jacob, Christoph R.; Kureti, Sven; Grunwaldt, Jan-Dierk

    2016-11-01

    Iron oxide centres are structurally investigated in 0.1% Fe/γ-Al2O3, which is known as highly active catalyst, for instance in the oxidation of CO. The sample was characterised by using X-ray absorption spectroscopy (XAS) in terms of X-ray absorption near-edge structure (XANES) and extended X-ray absorption fine structure (EXAFS), Mössbauer spectroscopy, X-ray diffraction (XRD) and transmission electron microscopy (TEM). These analyses evidenced high dispersion of the iron oxide entities without significant presence of bulk-like aggregates associated with the low Fe content of the catalyst. A library of structural models of Al2O3-supported surface Fe was created as input for EXAFS fitting. Additionally, several model structures of Fe substituting Al ions in bulk γ-Al2O3 were created with optimised geometry based on density-functional theory (DFT) calculations. From EXAFS refinement of the best 8 out of 24 models, it was found that the trivalent Fe ions are coordinated by 4-5 oxygen atoms and are located on octahedral lattice sites of the exposed surfaces of γ-Al2O3. These iron oxide species exist mainly as a mixture of monomeric and binuclear species and due to the low concentration represent suitable model systems as alternative to single crystal systems for structure-function relationships.

  3. Superior high-temperature oxidation resistance of a novel (Al2O3-Y2O3)/Pt laminated coating

    NASA Astrophysics Data System (ADS)

    Ma, Xiaoxu; He, Yedong; Wang, Deren; Zhang, Jin

    2012-03-01

    A 7-layer (Al2O3-Y2O3)/Pt laminated coating was successfully prepared on a Ni-based superalloy by magnetron sputtering methods. It is observed that the as-prepared coating has dense and refined brittle/ductile laminated nanostructure. Cyclic oxidation tests were adopted to investigate the oxidation and spallation resistance of this novel laminated coating. The results revealed that the 7-layer (Al2O3-Y2O3)/Pt laminated coating can significantly improve the high-temperature oxidation resistance and spallation resistance of the Ni-based superalloy. In such laminated coating, the multi-sealed (Al2O3-Y2O3) and Pt layers can effectively suppress the inward diffusion of oxygen to an extremely low level, providing super oxidation resistance at 1200 °C for 1000 h. In addition, the excellent high-temperature mechanical properties of the (Al2O3-Y2O3)/Pt laminated coating are mainly induced by the increased thermal expansion coefficient and the brittle/ductile laminated composite structure by means of energy release mechanisms.

  4. Enhanced lithium battery with polyethylene oxide-based electrolyte containing silane-Al2 O3 ceramic filler.

    PubMed

    Zewde, Berhanu W; Admassie, Shimelis; Zimmermann, Jutta; Isfort, Christian Schulze; Scrosati, Bruno; Hassoun, Jusef

    2013-08-01

    A solid polymer electrolyte prepared by using a solvent-free, scalable technique is reported. The membrane is formed by low-energy ball milling followed by hot-pressing of dry powdered polyethylene oxide polymer, LiCF3 SO3 salt, and silane-treated Al2 O3 (Al2 O3 -ST) ceramic filler. The effects of the ceramic fillers on the properties of the ionically conducting solid electrolyte membrane are characterized by using electrochemical impedance spectroscopy, XRD, differential scanning calorimeter, SEM, and galvanostatic cycling in lithium cells with a LiFePO4 cathode. We demonstrate that the membrane containing Al2 O3 -ST ceramic filler performs well in terms of ionic conductivity, thermal properties, and lithium transference number. Furthermore, we show that the lithium cells, which use the new electrolyte together with the LiFePO4 electrode, operate within 65 and 90 °C with high efficiency and long cycle life. Hence, the Al2 O3 -ST ceramic can be efficiently used as a ceramic filler to enhance the performance of solid polymer electrolytes in lithium batteries.

  5. High-κ Al2O3 material in low temperature wafer-level bonding for 3D integration application

    NASA Astrophysics Data System (ADS)

    Fan, J.; Tu, L. C.; Tan, C. S.

    2014-03-01

    This work systematically investigated a high-κ Al2O3 material for low temperature wafer-level bonding for potential applications in 3D microsystems. A clean Si wafer with an Al2O3 layer thickness of 50 nm was applied as our experimental approach. Bonding was initiated in a clean room ambient after surface activation, followed by annealing under inert ambient conditions at 300 °C for 3 h. The investigation consisted of three parts: a mechanical support study using the four-point bending method, hermeticity measurements using the helium bomb test, and thermal conductivity analysis for potential heterogeneous bonding. Compared with samples bonded using a conventional oxide bonding material (SiO2), a higher interfacial adhesion energy (˜11.93 J/m2) and a lower helium leak rate (˜6.84 × 10-10 atm.cm3/sec) were detected for samples bonded using Al2O3. More importantly, due to the excellent thermal conductivity performance of Al2O3, this technology can be used in heterogeneous direct bonding, which has potential applications for enhancing the performance of Si photonic integrated devices.

  6. Evolution of complementary resistive switching characteristics using IrOx/GdOx/Al2O3/TiN structure

    NASA Astrophysics Data System (ADS)

    Jana, Debanjan; Samanta, Subhranu; Maikap, Siddheswar; Cheng, Hsin-Ming

    2016-01-01

    The complementary resistive switching (CRS) characteristics using an IrOx/GdOx/Al2O3/TiN single cell are observed whereas the bipolar resistive switching (BRS) characteristics are observed for the IrOx/GdOx/TiN structure. Transmission electron microscope and energy dispersive X-ray spectroscopy depth profile show crystalline GdOx film and the presence of higher amount of oxygen at both IrOx/GdOx interface and Al2O3 layer. Inserting thin Al2O3 layer, the BRS is changed to CRS. This CRS has hopping distance of 0.58 nm and Poole-Frenkel current conductions for the "0" and "1" states, respectively. A schematic model using oxygen vacancy filament formation/rupture at the TE/GdOx interface and Al2O3 layer has been illustrated. This CRS device has good endurance of 1000 cycles with a pulse width of 1 μs, which is very useful for future crossbar architecture.

  7. Investigation of neutron converters for production of optically stimulated luminescence (OSL) neutron dosimeters using Al 2O 3:C

    NASA Astrophysics Data System (ADS)

    Mittani, J. C. R.; da Silva, A. A. R.; Vanhavere, F.; Akselrod, M. S.; Yukihara, E. G.

    2007-07-01

    This paper presents the optically stimulated luminescence (OSL) properties of neutron dosimeters in powder and in the form of pellets prepared with a mixture of Al 2O 3:C and neutron converters. The neutron converters investigated were high density polyethylene (HDPE), lithium fluoride (LiF), lithium fluoride 95% enriched with 6Li ( 6LiF), lithium carbonate 95% enriched with 6Li ( 6Li 2CO 3), boric acid enriched with 99% of 10B (H310BO) and gadolinium oxide (Gd 2O 3). The proportion of Al 2O 3:C and neutron converter in the mixture was varied to optimize the total OSL signal and neutron sensitivity. The neutron sensitivity and dose-response were determined for the OSL dosimeters using a bare 252Cf source and compared to the response of Harshaw TLD-600 and TLD-700 dosimeters ( 6LiF:Mg,Ti and 7LiF:Mg,Ti). The results demonstrate the possibility of developing an OSL dosimeter made of Al 2O 3:C powder and neutron converter with a neutron sensitivity (defined as the ratio between the 60Co equivalent gamma dose and the reference neutron absorbed dose) and neutron-gamma discrimination comparable to the TLD-600/TLD-700 combination. It was shown that the shape of the OSL decay curves varied with the type of the neutron converter, demonstrating the influence of the energy deposition mechanism and ionization density on the OSL process in Al 2O 3:C.

  8. Slurry Erosion Performance of Ni-Al2O3 Based Thermal-Sprayed Coatings: Effect of Angle of Impingement

    NASA Astrophysics Data System (ADS)

    Grewal, H. S.; Agrawal, Anupam; Singh, H.; Shollock, B. A.

    2014-02-01

    In this paper, slurry erosion performance of high velocity flame-sprayed Ni-Al2O3 based coatings was evaluated. The coatings were deposited on a hydroturbine steel (CA6NM) by varying the content of Al2O3 in Ni. Using jet-type test rig, erosion behavior of coatings and bare steel was evaluated at different impingement angles. Detailed investigation of the surface morphology of the eroded specimens was undertaken using SEM/EDS to identify potential erosion mechanism. A parameter named "erosion mechanism identifier" (ξ) was used to predict the mode of erosion. It was observed that the coating prepared using 40 wt.% of Al2O3 showed a highest resistance to erosion. This coating enhanced the erosion resistance of the steel by 2 to 4 times. Spalling in the form of splats and chunks of material (formed by interlinking of cracks) along with fracture of Al2O3 splats were identified as primary mechanisms responsible for the loss of coating material. The erosion mechanism of coatings and bare steel predicted by ξ was in good agreement with that observed experimentally. Among different parameters,, a function of fracture toughness ( K IC) and hardness ( H) showed excellent correlation with erosion resistance of coatings at both the impingement angles.

  9. Effect of intersplat interface bonding on the microstructure of plasma-sprayed Al2O3 coating

    NASA Astrophysics Data System (ADS)

    Yang, Er-Juan; Li, Chang-Jiu; Yang, Guan-Jun; Li, Cheng-Xin; Takahashi, Makoto

    2014-08-01

    The interface bonding between lamellae dominates the properties and performance of plasma-sprayed ceramic coatings. In this study, the interlamellar interface bonding and its effect on the splat microstructure were examined using TEM analysis of the microstructure of a plasma-sprayed Al2O3 coating. The obtained results revealed that the intersplat interface microstructure depends significantly on the intersplat bonding. An amorphous phase was observed in the interface region in which the bonding was formed, while the γ-Al2O3 phase was observed at the interface where no bonding was formed. In addition, it was found that the interface bonding significantly influenced the interface microstructure of the coating. After heat treatment, the phase of the bonding between adjacent splats was transformed from amorphous to γ-Al2O3. In the interface region in which the amorphous phase recrystallization occurred, nanosized pores evolved owing to the volume shrinkage accompanying the transformation of alumina from the amorphous to the γ-Al2O3 phase.

  10. Electron Cyclotron Resonance Plasma-Assisted Atomic Layer Deposition of Amorphous Al2O3 Thin Films

    NASA Astrophysics Data System (ADS)

    Xiong, Yuqing; Sang, Lijun; Chen, Qiang; Yang, Lizhen; Wang, Zhengduo; Liu, Zhongwei

    2013-01-01

    Without extra heating, Al2O3 thin films were deposited on a hydrogen-terminated Si substrate etched in hydrofluoric acid by using a self-built electron cyclotron resonance (ECR) plasma-assisted atomic layer deposition (ALD) device with Al(CH3)3 (trimethylaluminum; TMA) and O2 used as precursor and oxidant, respectively. During the deposition process, Ar was introduced as a carrier and purging gas. The chemical composition and microstructure of the as-deposited Al2O3 films were characterized by using X-ray diffraction (XRD), an X-ray photoelectric spectroscope (XPS), a scanning electron microscope (SEM), an atomic force microscope (AFM) and a high-resolution transmission electron microscope (HRTEM). It achieved a growth rate of 0.24 nm/cycle, which is much higher than that deposited by thermal ALD. It was found that the smooth surface thin film was amorphous alumina, and an interfacial layer formed with a thickness of ca. 2 nm was observed between the Al2O3 film and substrate Si by HRTEM. We conclude that ECR plasma-assisted ALD can grow Al2O3 films with an excellent quality at a high growth rate at ambient temperature.

  11. Cyclization of citronellal in a supercritical solvent in a flow reactor in the presence of Al2O3

    NASA Astrophysics Data System (ADS)

    Anikeev, V. I.; Il'ina, I. V.; Volcho, K. P.; Salakhutdinov, N. F.

    2012-12-01

    The reactivity of citronellal under supercritical solvent conditions in a flow reactor in the presence of Al2O3 is examined. It is shown that at 160°C, the main transformation product of citronellal is isopulegol, and when the temperature is increased to 190°C, they are monoterpenes with a para-menthane framework and myrcene.

  12. Structural characterization and catalytic activity of Pt dendrimer encapsulated nanoparticles supported over Al2O3 for SCR of NOx.

    PubMed

    Bae, HyunSook; Rao, Komateedi N; Ha, HeonPhil

    2011-07-01

    Pt/Al2O3 and Pt-Mg/Al2O3 nano composites were successfully prepared by dendrimer templated synthesis route. The obtained dendritic nanoparticles were dispersed in alumina support and they were evaluated for SCR of NOx using methane as reductant. Thermal analysis results of uncalcined samples revealed that the oxygen can accelerate the rate of dendrimer shell decomposition. X-ray diffractograms of 500 degrees C calcined samples disclosed the amorphous nature of materials, whereas 1000 degrees C air calcined samples showed enhanced crystallinity as well as diffraction pattern corresponding to Pt and PtO. HRTEM images of Pt40-G4OH dendritic nanoparticles showed uniform particulate distribution with average particle size of 2.4 nm. The STEM results of 0.5 Pt/Al2O3 sample calcined at 500 degrees C exhibited a wide range of particles between 2 and 20 nm. This indicates the huge segregation of platinum metal particles during impregnation and subsequent calcination. Among the synthesized materials 0.5 wt% Pt/Al2O3 sample showed excellent conversion and selectivity for SCR of NOx.

  13. Retardation mechanism of ultrathin Al2O3 interlayer on Y2O3 passivated gallium nitride surface.

    PubMed

    Quah, Hock Jin; Cheong, Kuan Yew

    2014-05-28

    A systematic investigation was carried out by incorporating an ultrathin aluminum oxide (Al2O3) as an interlayer between yttrium oxide (Y2O3) passivation layer and GaN substrate. The sandwiched samples were then subjected to postdeposition annealing in oxygen ambient from 400 to 800 °C. The Al2O3 interlayer was discovered to play a significant role in slowing down inward diffusion of oxygen through the Y2O3 passivation layer as well as in impeding outward diffusion of Ga(3+) and N(3-) from the decomposed GaN surface. These beneficial effects have suppressed subsequent formation of interfacial layer. A mechanism in association with the function of Al2O3 as an interlayer was suggested and discussed. The mechanism was explicitly described on the basis of the obtained results from X-ray diffraction, X-ray photoelectron spectroscopy, energy-filtered transmission electron microscopy (TEM), high resolution TEM, and electron energy loss spectroscopy line scan. A correlation between the proposed mechanism and metal-oxide-semiconductor characteristics of Y2O3/Al2O3/GaN structure has been proposed.

  14. Colloidal α-Al2O3 Europium(III) and humic substances interactions: a macroscopic and spectroscopic study.

    PubMed

    Janot, Noémie; Benedetti, Marc F; Reiller, Pascal E

    2011-04-15

    Eu(III) sorption onto α-Al(2)O(3) in the presence of purified Aldrich humic acid (PAHA) is studied by batch experiments and time-resolved laser-induced luminescence spectroscopy of Eu(III). Experiments are conducted at varying pH, at 0.1 mol/L NaClO(4), 10(-6) mol/L Eu(III), 1 g/L α-Al(2)O(3) and 28 mg/L PAHA, which assured a complete Eu(III)-PAHA complexation. Adsorption of Eu(III) presents the expected pH-edge at 7, which is modified by addition of PAHA. Presence of Eu(III) slightly increases PAHA sorption throughout the pH range. The evolutions of luminescence spectra and decay times of the binary systems, that is, Eu(III)/α-Al(2)O(3) and Eu(III)/PAHA, indicate a progressive surface- and humic-complexation with increasing pH. The typical biexponential luminescence decay in Eu(III)/PAHA system is also recorded; the fastest deactivation depending barely on pH. In ternary Eu(III)/PAHA/α-Al(2)O(3) system, the existence of a luminescence biexponential decay for all pH means that Eu(III) is always in the direct neighborhood of the humic substance. Below pH 7, the spectra of the ternary system (Eu(III)/PAHA/α-Al(2)O(3)) are not different from the ones of Eu(III)/PAHA system, implying the same complex symmetry. Nevertheless, the increase of luminescence decay time points to a change in PAHA conformation onto the surface.

  15. Heat Transfer Enhancement in a Helically Coiled Tube with Al2O3/WATER Nanofluid Under Laminar Flow Condition

    NASA Astrophysics Data System (ADS)

    Kumar, P. C. Mukesh; Kumar, J.; Suresh, S.; Babu, K. Praveen

    2012-10-01

    In this experimental investigation, the heat transfer coefficients of a shell and helically coiled tube heat exchanger using Al2O3/water nanofluid under laminar flow condition were studied. The Al2O3 nanoparticles were characterized by X-Ray diffraction (XRD). The Al2O3/water nanofluid at 0.1%, 0.4% and 0.8% particle volume concentration were prepared by using two step method. The prepared nanofluid was characterized by scanning electron microscope (SEM). It is observed that the overall heat transfer coefficient, inner heat transfer coefficient and experimental inner Nusselt number increase while increasing particle volume concentration and increasing inner Dean number. The enhancement of overall heat transfer coefficient was found to be 7%, 16.9% and 24.2% at 0.1%, 0.4% and 0.8% Al2O3/water nanofluid respectively when compared with water. The enhancement of tube side experimental Nusselt number was found to be 17%, 22.9% and 28% at 0.1%, 0.4% and 0.8% particle volume concentration of Al2O3/water nanofluid respectively when compared with water at fixed Dean number. The tests were conducted in the range of 1600 < De < 2700, and 5200 < Re < 8600 under laminar flow condition and counter flow configuration. These enhancements are due to higher thermal conductivity of nanofluid while increasing particle volume concentration and Brownian motion of nanoparticles. It is studied that there is no negative impact on formation of secondary flow and mixing of fluid when nanofluid passes through the helically coiled tube.

  16. Effect of Al2O3 on the Crystallization of Mold Flux for Casting High Al Steel

    NASA Astrophysics Data System (ADS)

    Zhou, Lejun; Wang, Wanlin; Zhou, Kechao

    2015-06-01

    In order to lower the weight of automotive bodies for better fuel-efficiency and occupant safety, the demand for high Al-containing advanced high strength steel, such as transformation-induced plasticity and twinning-induced plasticity steel, is increasing. However, high aluminum content in steels would tend to significantly affect the properties of mold flux during the continuous casting process. In this paper, a kinetic study of the effect of Al2O3 content on the crystallization behavior of mold flux was conducted by using the single hot thermocouple technique and the Johnson-Mehl-Avrami model combined with the Arrhenius Equation. The results suggested that Al2O3 behaves as an amphoteric oxide in the crystallization process of mold flux. The precipitated phases of mold flux change from cuspidine (Ca4Si2O7F2) into nepheline (NaAlSiO4) and CaF2, and then into gehlenite (Ca2Al2SiO7) with the increase of Al2O3 content. The kinetics study of the isothermal crystallization process indicated that the effective crystallization rate ( k) and Avrami exponent ( n) also first increased and then decreased with the increase of Al2O3 content. The values for the crystallization activation energy of mold flux with different Al2O3 contents were E R0.8A7 = 150.76 ± 17.89 kJ/mol, E R0.8A20 = 136.43 ± 6.48 kJ/mol, E R0.8A30 = 108.63 ± 12.25 kJ/mol and E R0.8A40 = 116.15 ± 8.17 kJ/mol.

  17. Role of Tricoordinate Al Sites in CH3ReO3/Al2O3 Olefin Metathesis Catalysts.

    PubMed

    Valla, Maxence; Wischert, Raphael; Comas-Vives, Aleix; Conley, Matthew P; Verel, René; Copéret, Christophe; Sautet, Philippe

    2016-06-01

    Re2O7 supported on γ-alumina is an alkene metathesis catalyst active at room temperature, compatible with functional groups, but the exact structures of the active sites are unknown. Using CH3ReO3/Al2O3 as a model for Re2O7/Al2O3, we show through a combination of reactivity studies, in situ solid-state NMR, and an extensive series of DFT calculations, that μ-methylene structures (Al-CH2-ReO3-Al) containing a Re═O bound to a tricoordinated Al (AlIII) and CH2 bound to a four-coordinated Al (AlIVb) are the precursors of the most active sites for olefin metathesis. The resting state of CH3ReO3/Al2O3 is a distribution of μ-methylene species formed by the activation of the C-H bond of CH3ReO3 on different surface Al-O sites. In situ reaction with ethylene results in the formation of Re metallacycle intermediates, which were studied in detail through a combination of solid-state NMR experiments, using labeled ethylene, and DFT calculations. In particular, we were able to distinguish between metallacycles in TBP (trigonal-bipyramidal) and SP (square-pyramidal) geometry, the latter being inactive and detrimental to catalytic activity. The SP sites are more likely to be formed on other Al sites (AlIVa/AlIVa). Experimentally, the activity of CH3ReO3/Al2O3 depends on the activation temperature of alumina; catalysts activated at or above 500 °C contain more active sites than those activated at 300 °C. We show that the dependence of catalytic activity on the Al2O3 activation temperature is related to the quantity of available AlIII-defect sites and adsorbed H2O.

  18. Role of Tricoordinate Al Sites in CH3ReO3/Al2O3 Olefin Metathesis Catalysts.

    PubMed

    Valla, Maxence; Wischert, Raphael; Comas-Vives, Aleix; Conley, Matthew P; Verel, René; Copéret, Christophe; Sautet, Philippe

    2016-06-01

    Re2O7 supported on γ-alumina is an alkene metathesis catalyst active at room temperature, compatible with functional groups, but the exact structures of the active sites are unknown. Using CH3ReO3/Al2O3 as a model for Re2O7/Al2O3, we show through a combination of reactivity studies, in situ solid-state NMR, and an extensive series of DFT calculations, that μ-methylene structures (Al-CH2-ReO3-Al) containing a Re═O bound to a tricoordinated Al (AlIII) and CH2 bound to a four-coordinated Al (AlIVb) are the precursors of the most active sites for olefin metathesis. The resting state of CH3ReO3/Al2O3 is a distribution of μ-methylene species formed by the activation of the C-H bond of CH3ReO3 on different surface Al-O sites. In situ reaction with ethylene results in the formation of Re metallacycle intermediates, which were studied in detail through a combination of solid-state NMR experiments, using labeled ethylene, and DFT calculations. In particular, we were able to distinguish between metallacycles in TBP (trigonal-bipyramidal) and SP (square-pyramidal) geometry, the latter being inactive and detrimental to catalytic activity. The SP sites are more likely to be formed on other Al sites (AlIVa/AlIVa). Experimentally, the activity of CH3ReO3/Al2O3 depends on the activation temperature of alumina; catalysts activated at or above 500 °C contain more active sites than those activated at 300 °C. We show that the dependence of catalytic activity on the Al2O3 activation temperature is related to the quantity of available AlIII-defect sites and adsorbed H2O. PMID:27140286

  19. Characterization of humic acid reactivity modifications due to adsorption onto α-Al2O3.

    PubMed

    Janot, Noémie; Reiller, Pascal E; Zheng, Xing; Croué, Jean-Philippe; Benedetti, Marc F

    2012-03-01

    Adsorption of purified Aldrich humic acid (PAHA) onto α-Al(2)O(3) is studied by batch experiments at different pH, ionic strength and coverage ratios R (mg of PAHA by m(2) of mineral surface). After equilibration, samples are centrifuged and the concentration of PAHA in the supernatants is measured. The amount of adsorbed PAHA per m(2) of mineral surface is decreasing with increasing pH. At constant pH value, the amount of adsorbed PAHA increases with initial PAHA concentration until a pH-dependent constant value is reached. UV/Visible specific parameters such as specific absorbance SUVA(254), ratio of absorbance values E(2)/E(3) and width of the electron-transfer absorbance band Δ(ET) are calculated for supernatant PAHA fractions of adsorption experiments at pH 6.8, to have an insight on the evolution of PAHA characteristics with varying coverage ratio. No modification is observed compared to original compound for R ≥ 20 mg(PAHA)/g(α)(-)(A)1₂(O)₃. Below this ratio, aromaticity decreases with initial PAHA concentration. Size-exclusion chromatography - organic carbon detection measurements on these supernatants also show a preferential adsorption of more aromatic and higher-sized fractions. Spectrophotometric titrations were done to estimate changes of reactivity of supernatants from adsorption experiments made at pH ≈6.8 and different PAHA concentrations. Evolutions of UV/Visible spectra with varying pH were treated to obtain titration curves that are interpreted within the NICA-Donnan framework. Protonation parameters of non-sorbed PAHA fractions are compared to those obtained for the PAHA before contact with the oxide. The amount of low proton-affinity type of sites and the value of their median affinity constant decrease after adsorption. From PAHA concentration in the supernatant and mass balance calculations, "titration curves" are experimentally proposed for the adsorbed fractions for the first time. These changes in reactivity to our opinion could

  20. Bovine serum albumin adsorption onto colloidal Al2O3 particles: a new model based on zeta potential and UV-vis measurements.

    PubMed

    Rezwan, Kurosch; Meier, Lorenz P; Rezwan, Mandana; Vörös, Janos; Textor, Marcus; Gauckler, Ludwig J

    2004-11-01

    We investigated the adsorption of bovine serum albumin (BSA) on colloidal Al2O3 particles in an aqueous environment. Changes in the zeta potential of the Al2O3 particles upon the adsorption of BSA were measured using an electro-acoustic technique. The mass of protein adsorbed was determined by using UV-vis spectroscopy. The change of the isoelectric point of the Al2O3 powder-protein suspension was found to be a function of adsorbed protein mass. It was shown that approximately one monolayer of BSA was needed to fully mask the surface and to compromise the charge of Al2O3. From titration experiments it follows that about 30-36% of the negatively charged groups of the protein form bonds with the protonated and charged Al2O3 surface. On the basis of our observations we introduced a new adsorption model for BSA on Al2O3 particles.

  1. Synthesis, sintering and characterization of Al2O 3-TiC nano-composites powders from carbon coated precursors

    NASA Astrophysics Data System (ADS)

    Kaga, Hisashi

    Synthesis, sintering and characterization of Al2O3-TiC nano-composite powders from carbon coated precursors were investigated. Degussa P-25 titanium dioxide, Cabot carbon black, and Alfa Aesar aluminum were the initial starting powders. Hydrocarbon gas (C3H6) was used as the carbon source for the carbon coated precursors. Analytical methods employed in this research were BET surface area measurement, X-ray diffraction (XRD), transmission electron microscopy (TEM), scanning electron microscopy (SEM), Vickers hardness tester, and differential scanning calorimetry (DSC). For Al2O3-TiC formation studies, three different types of precursors which are carbon coated TiO2/Al mixture, mixture of carbon coated TiO2 and Al, and standard mixture of TiO 2, Al, and carbon black were prepared to examine formation mechanism reaction. The carbon coated TiO2/Al mixture dramatically changed the reaction mechanism and produced high quality nanosize Al2O 3-TiC powders. XRD and BET results showed that the carbon coated TiO 2/Al synthesized at 1200°C had only Al2O3 and TiC phases with high surface area about 22m2/g which were formed via intermediate phases of Ti2O3 and Al 3Ti. TEM results showed that the produced Al2O3-TiC powders had fine particle size (20--80 nm), narrow particle size distribution, and freely agglomerated. DSC curve and XRD results of the carbon coated TiO 2/Al mixture also showed that there were two endothermic and three successive weak exothermic reactions because released heat was controlled by the carbon coating. Experimentally determined the first exothermic reaction 5Al + 3TiO 2 → Al2O3 + Ti2O3 + Al3Ti which was compared with theoretical explanation model and they were found to be in agreement. Sintering behavior of nano-size Al 2O3-TiC synthesized from carbon coated precursors was investigated in Al2O3-TiC-MgO system using pressureless sintering and hot-pressing methods. After pressureless sintering, MgO doped Al 2O3-20wt.%TiC resulted in 98% of theoretical

  2. Low-temperature growth of single-walled carbon nanotube using Al2O3/Pd/Al2O3 multilayer catalyst by alcohol gas source method at high vacuum

    NASA Astrophysics Data System (ADS)

    Kiribayashi, Hoshimitsu; Ogawa, Seigo; Kozawa, Akinari; Saida, Takahiro; Naritsuka, Shigeya; Maruyama, Takahiro

    2016-06-01

    We carried out single-walled carbon nanotube (SWCNT) growth at 500 and 600 °C using Al2O3/Pd/Al2O3 multilayer catalysts on SiO2/Si substrates by the alcohol gas source method. When the ethanol pressures were 1 × 10‑4 and 1 × 10‑3 Pa, radial-breathing-mode (RBM) peaks and sharp G band peaks appeared in Raman spectra, indicating the growth of SWCNTs even at 500 °C. When the growth temperature and ethanol pressure were 500 °C and 1 × 10‑4 Pa, respectively, the growth rate decreased gradually with the growth time, but the SWCNT growth continued for more than 4 h and the diameter distribution changed as the growth proceeded. X-ray photoelectron spectroscopy measurements showed that oxidized Pd catalyst particles were reduced to metallic states after the SWCNT growth started.

  3. Characterization of Al2O3 optically stimulated luminescence films for 2D dosimetry using a 6 MV photon beam

    NASA Astrophysics Data System (ADS)

    Ahmed, M. F.; Shrestha, N.; Schnell, E.; Ahmad, S.; Akselrod, M. S.; Yukihara, E. G.

    2016-11-01

    This work evaluates the dosimetric properties of newly developed optically stimulated luminescence (OSL) films, fabricated with either Al2O3:C or Al2O3:C,Mg, using a prototype laser scanning reader, a developed image reconstruction algorithm, and a 6 MV therapeutic photon beam. Packages containing OSL films (Al2O3:C and Al2O3:C,Mg) and a radiochromic film (Gafchromic EBT3) were irradiated using a 6 MV photon beam using different doses, field sizes, with and without wedge filter. Dependence on film orientation of the OSL system was also tested. Diode-array (MapCHECK) and ionization chamber measurements were performed for comparison. The OSLD film doses agreed with the MapCHECK and ionization chamber data within the experimental uncertainties (<2% at 1.5 Gy). The system background and minimum detectable dose (MDD) were  <0.5 mGy, and the dose response was approximately linear from the MDD up to a few grays (the linearity correction was  <10% up to ~2–4 Gy), with no saturation up to 30 Gy. The dose profiles agreed with those obtained using EBT3 films (analyzed using the triple channel method) in the high dose regions of the images. In the low dose regions, the dose profiles from the OSLD films were more reproducible than those from the EBT3 films. We also demonstrated that the OSL film data are independent on scan orientation and field size over the investigated range. The results demonstrate the potential of OSLD films for 2D dosimetry, particularly for the characterization of small fields, due to their wide dynamic range, linear response, resolution and dosimetric properties. The negligible background and potential simple calibration make these OSLD films suitable for remote audits. The characterization presented here may motivate further commercial development of a 2D dosimetry system based on the OSL from Al2O3:C or Al2O3:C,Mg.

  4. A comparative study of CeO2-Al2O3 support prepared with different methods and its application on MoO3/CeO2-Al2O3 catalyst for sulfur-resistant methanation

    NASA Astrophysics Data System (ADS)

    Jiang, Minhong; Wang, Baowei; Yao, Yuqin; Li, Zhenhua; Ma, Xinbin; Qin, Shaodong; Sun, Qi

    2013-11-01

    The CeO2-Al2O3 supports prepared with impregnation (IM), deposition precipitation (DP), and solution combustion (SC) methods for MoO3/CeO2-Al2O3 catalyst were investigated in the sulfur-resistant methanation. The supports and catalysts were characterized by N2-physisorption, transmission electron microscopy (TEM), X-ray diffraction (XRD), Raman spectroscopy (RS), and temperature-programmed reduction (TPR). The N2-physisorption results indicated that the DP method was favorable for obtaining better textural properties. The TEM and RS results suggested that there is a CeO2 layer on the surface of the support prepared with DP method. This CeO2 layer not only prevented the interaction between MoO3 and γ-Al2O3 to form Al2(MoO4)3 species, but also improved the dispersion of MoO3 in the catalyst. Accordingly, the catalysts whose supports were prepared with DP method exhibited the best catalytic activity. The catalysts whose supports were prepared with SC method had the worst catalytic activity. This was caused by the formation of Al2(MoO4)3 and crystalline MoO3. Additionally, the CeO2 layer resulted in the instability of catalysts in reaction process. The increasing of calcination temperature of supports reduced the catalytic activity of all catalysts. The decrease extent of the catalysts whose supports were prepared with DP method was the lowest as the CeO2 layer prevented the interaction between MoO3 and γ-Al2O3.

  5. Effect of bi-layer ratio in ZnO/Al2O3 multilayers on microstructure and functional properties of ZnO nanocrystals embedded in Al2O3 matrix

    NASA Astrophysics Data System (ADS)

    Sekhar, K. C.; Levichev, S.; Buljan, M.; Bernstorff, S.; Kamakshi, Koppole; Chahboun, A.; Almeida, A.; Agostinho Moreira, J.; Pereira, M.; Gomes, M. J. M.

    2014-04-01

    Zinc oxide (ZnO) nanocrystals (NCs) embedded in alumina (Al2O3) matrix were produced via rapid thermal annealing (RTA) of pulsed laser deposited ZnO/Al2O3 multilayered nanostructures. The effect of the thickness ratio ( R) between Al2O3 and ZnO in one bi-layer on the microstructure and functional properties of NCs has been investigated. Grazing incidence small angle X-ray scattering confirmed the formation of nanocrystals after RTA. Grazing incidence wide angle X-ray scattering studies revealed that ZnO NCs have a high crystalline quality with (100) as preferred orientation. Tensile strain of NCs decreases with increasing R and is correlated to the distribution of NCs. From Raman analysis, it is noticed that the phonon frequency of the E2 mode, related to the ZnO wurtzite phase, in NCs is shifted towards that of bulk ZnO with increasing R. Photoluminescence studies revealed that the near edge peak position shifts from 382 nm to 371 nm as the ratio R changes from 1.5 to 4 and is attributed to the strain effect. The intensity of emission in the yellow-green region due to defects decreases significantly with increasing R. Current-voltage ( I- V) characteristics of Al/ZnO NCs embedded in Al2O3/n-Si (100)/Al have shown a hysteresis behavior. The increasing width of the hysteresis with increasing R revealed that the origin of the hysteresis might be due to the existence of polar surface charges on well-separated NCs. The high-resistance and low-resistance states in I- V hysteresis curves seem to be governed by Fowler-Nordheim tunneling and Schottky emission mechanisms, respectively.

  6. Hydroprocessing of Jatropha Oil for Production of Green Diesel over Non-sulfided Ni-PTA/Al2O3 Catalyst.

    PubMed

    Liu, Jing; Lei, Jiandu; He, Jing; Deng, Lihong; Wang, Luying; Fan, Kai; Rong, Long

    2015-01-01

    The non-sulfided Ni-PTA/Al2O3 catalyst was developed to produce green diesel from the hydroprocessing of Jatropha oil. The Ni-PTA/Al2O3 catalyst was prepared by one-pot synthesis of Ni/Al2O3 with the co-precipitation method and then impregnanting Ni/Al2O3 with PTA solution. The catalysts were characterized with BET, SEM-EDX, TEM, XRD, XPS, TGA and NH3-TPD. The Ni and W species of the Ni-PTA/Al2O3 catalyst were much more homogeneously distributed on the surface than that of commercial Al2O3. Catalytic performance in the hydroprocessing of Jatropha oil was evaluated by GC. The maximum conversion of Jatropha oil (98.5 wt%) and selectivity of the C15-C18 alkanes fraction (84.5 wt %) occurred at 360 °C, 3.0 MPa, 0.8 h(-1). The non-sulfided Ni-PTA/Al2O3 catalyst is more environmentally friendly than the conventional sulfided hydroprocessing catalyst, and it exhibited the highest catalytic activity than the Ni-PTA catalyst supported with commercial Al2O3 grain and Al2O3 powder. PMID:26162092

  7. Tilted domain growth of metalorganic chemical vapor (MOCVD)-grown ZnO(0001) on α-Al2O3(0001)

    SciTech Connect

    Wang, C. M.; Saraf, L. V.; Hubler, T. L.; Nachimuthu, P.

    2008-01-01

    ZnO grown on α-Al2O3 (0001) generally possesses an orientation such that α-Al2O3 (0001)//ZnO(0001) and two in-plane domains nucleate such that: α-Al2O3 [11-20]//ZnO[11-20] and/or α-Al2O3 [11-20]//ZnO[10-10]. In this paper, we report a new growth mode for ZnO grown on α-Al2O3 (0001) using MOCVD. We find that α-Al2O3 [11-20]//ZnO[10-10] but the (0001) plane of ZnO is tilted relative to the (0001) plane of α-Al2O3 such that ZnO(0001) is almost parallel to the α-Al2O3 (-1104) plane. This orientation reduces the extent of lattice mismatch. The interface between ZnO and α-Al2O3 is abrupt and possesses periodic dislocations.

  8. Thermodynamics and Structure of CaO-Al2O3-3 Mass Pct B2O3 Slag at 1773 K (1500 °C)

    NASA Astrophysics Data System (ADS)

    Shu, Qifeng; Li, Pengfei; Zhang, Xiang; Chou, Kuochih

    2016-08-01

    Activity values of Al2O3 in CaO-Al2O3-B2O3 systems at 1773 K (1500 °C) were determined experimentally using a gas-copper-slag equilibrium technique. The oxygen partial pressure was controlled by C/CO equilibrium. A negative deviation from ideality was found in measured activity of Al2O3. The activity coefficient of Al2O3 decreases with the increase of CaO/Al2O3 ratio. To interpret the variation of Al2O3 activity with composition, structures of CaO-Al2O3-B2O3 glassy slag were investigated by using Raman spectroscopy. It was found that the number of bridging oxygen decreases with increasing CaO/Al2O3 ratio. With increase of CaO content, the aluminate network was gradually depolymerized, which corresponds to the decrease of the activity coefficient of Al2O3.

  9. Hydroprocessing of Jatropha Oil for Production of Green Diesel over Non-sulfided Ni-PTA/Al2O3 Catalyst

    PubMed Central

    Liu, Jing; Lei, Jiandu; He, Jing; Deng, Lihong; Wang, Luying; Fan, Kai; Rong, Long

    2015-01-01

    The non-sulfided Ni-PTA/Al2O3 catalyst was developed to produce green diesel from the hydroprocessing of Jatropha oil. The Ni-PTA/Al2O3 catalyst was prepared by one-pot synthesis of Ni/Al2O3 with the co-precipitation method and then impregnanting Ni/Al2O3 with PTA solution. The catalysts were characterized with BET, SEM-EDX, TEM, XRD, XPS, TGA and NH3-TPD. The Ni and W species of the Ni-PTA/Al2O3 catalyst were much more homogeneously distributed on the surface than that of commercial Al2O3. Catalytic performance in the hydroprocessing of Jatropha oil was evaluated by GC. The maximum conversion of Jatropha oil (98.5 wt%) and selectivity of the C15-C18 alkanes fraction (84.5 wt %) occurred at 360 °C, 3.0 MPa, 0.8 h−1. The non-sulfided Ni-PTA/Al2O3 catalyst is more environmentally friendly than the conventional sulfided hydroprocessing catalyst, and it exhibited the highest catalytic activity than the Ni-PTA catalyst supported with commercial Al2O3 grain and Al2O3 powder. PMID:26162092

  10. Effect of cobalt precursors on the dispersion, reduction, and CO oxidation of CoO(x)/γ-Al2O3 catalysts calcined in N2.

    PubMed

    Zhang, Lingling; Dong, Lihui; Yu, Wujiang; Liu, Lianjun; Deng, Yu; Liu, Bin; Wan, Haiqin; Gao, Fei; Sun, Keqin; Dong, Lin

    2011-03-15

    The present work tentatively investigated the effect of cobalt precursors (cobalt acetate and cobalt nitrate) on the physicochemical properties of CoO(x)/γ-Al(2)O(3) catalysts calcined in N(2). XRD, Raman, XPS, FTIR, and UV-vis DRS results suggested that CoO/γ-Al(2)O(3) was obtained from cobalt acetate precursors and CoO was dispersed on γ-Al(2)O(3) below its dispersion capacity of 1.50 mmol/(100 m(2) γ-Al(2)O(3)), whereas Co(3)O(4)/γ-Al(2)O(3) was obtained from cobalt nitrate precursors and Co(3)O(4) preferred to agglomerate above the dispersion capacity of 0.15 mmol/(100m(2) γ-Al(2)O(3)). Compared with Co(3)O(4)/γ-Al(2)O(3), CoO/γ-Al(2)O(3) catalysts were difficult to be reduced and easy to desorb oxygen species at low temperatures and presented high activities for CO oxidation as proved by H(2)-TPR, O(2)-TPD, and CO oxidation model reaction results. A surface incorporation model was proposed to explain the dispersion and reduction properties of CoO/γ-Al(2)O(3) catalysts.

  11. Effect of cobalt precursors on the dispersion, reduction, and CO oxidation of CoO(x)/γ-Al2O3 catalysts calcined in N2.

    PubMed

    Zhang, Lingling; Dong, Lihui; Yu, Wujiang; Liu, Lianjun; Deng, Yu; Liu, Bin; Wan, Haiqin; Gao, Fei; Sun, Keqin; Dong, Lin

    2011-03-15

    The present work tentatively investigated the effect of cobalt precursors (cobalt acetate and cobalt nitrate) on the physicochemical properties of CoO(x)/γ-Al(2)O(3) catalysts calcined in N(2). XRD, Raman, XPS, FTIR, and UV-vis DRS results suggested that CoO/γ-Al(2)O(3) was obtained from cobalt acetate precursors and CoO was dispersed on γ-Al(2)O(3) below its dispersion capacity of 1.50 mmol/(100 m(2) γ-Al(2)O(3)), whereas Co(3)O(4)/γ-Al(2)O(3) was obtained from cobalt nitrate precursors and Co(3)O(4) preferred to agglomerate above the dispersion capacity of 0.15 mmol/(100m(2) γ-Al(2)O(3)). Compared with Co(3)O(4)/γ-Al(2)O(3), CoO/γ-Al(2)O(3) catalysts were difficult to be reduced and easy to desorb oxygen species at low temperatures and presented high activities for CO oxidation as proved by H(2)-TPR, O(2)-TPD, and CO oxidation model reaction results. A surface incorporation model was proposed to explain the dispersion and reduction properties of CoO/γ-Al(2)O(3) catalysts. PMID:21216407

  12. Growth-Rate Induced Epitaxial Orientation of CeO2 on Al2O3(0001)

    SciTech Connect

    Kuchibhatla, Satyanarayana V N T; Nachimuthu, Ponnusamy; Gao, Fei; Jiang, Weilin; Shutthanandan, V.; Engelhard, Mark H.; Seal, Sudipta; Thevuthasan, Suntharampillai

    2009-05-19

    High-quality ceria (CeO2) films were grown on sapphire (Al2O3) (0001) substrates using oxygen plasma-assisted molecular beam epitaxy. The epitaxial orientation of the ceria films has been found to be (100) and (111) at low (< 8 Å/min) and higher growth rates (up to ~30 Å/min), respectively. Evidence shows that CeO2 (100) film grows as three-dimensional islands, while CeO2 (111) proceeds with layered growth. Three in-plane domains at 30° to each other are observed in the CeO2 (100), which is attributed to the close match of the oxygen sub-lattices in the film and substrate that has a three-fold symmetry. Molecular dynamic simulations have further confirmed that the CeO2 film retains (100) orientation on the Al2O3 (0001) substrate.

  13. Hydrothermal transformation of magadiite into ferrierite in Al 2O 3-Na 2O-ethylenediamine-H 2O system

    NASA Astrophysics Data System (ADS)

    Wang, Yu; Yang, Yang; Cui, Miao; Sun, Jiangbo; Qi, Lin; Ji, Shouhua; Meng, Changgong

    2011-12-01

    This study investigated the transformation of magadiite into ferrierite in Al 2O 3-Na 2O-ethylenediamine (EDA)-H 2O system. The influence of various parameters such as reaction temperature, time, alkalinity, the reactant Na 2O/SiO 2 ratio and EDA/SiO 2 ratio were examined. Thermal and acid stability of the synthetic ferrierite are presented. Highly crystallized and pure ferrierite could be obtained from dispersion with the molar composition: 0.01 Na 2O: 0.005 Al 2O 3: SiO 2: 30 H 2O: 20 EDA by heating at 433 K for 48 h. The structure of ferrierite was destroyed when the temperature rose above 873 K and the framework of the sample, stirred in 5 mol/L HCl for 3 h, is consistent with the untreated ferrierite.

  14. Experimental investigation of benzoic acid diffusion coefficient in γ-Al2O3 nanofluids at different temperatures

    NASA Astrophysics Data System (ADS)

    Manouchehrian Fard, Manouchehr; Beiki, Hossein

    2016-10-01

    An experimental study was performed to measure benzoic acid diffusion coefficient in water-based γ-Al2O3 nanofluids at different temperatures. Measurements were carried out at 15, 20 and 25 °C. γ-Al2O3 nanoparticles with an average diameter of 10-20 nm were added into de-ionized water as the based fluid. Nanoparticles volume fractions used in the based fluid were 0.025, 0.05, 0.1, 0.2, 0.4 and 0.8 %. Measurements showed that the diffusion coefficients was not changed with nanoparticles concentration and no enhancement was found. Dependence of diffusion coefficients on nanoparticles concentration followed the same trend in all temperatures investigated in this work. Nano stirring and nano-obstacles could be regarded as two reasons for mass diffusivity changes in nanofluids.

  15. Field-assisted Densification of Superhard B6O Materials with Y2O3/Al2O3 Addition

    NASA Astrophysics Data System (ADS)

    Herrmann, M.; Raethel, J.; Sempf, K.; Thiele, M.; Bales, A.; Sigalas, I.

    B6O is a possible candidate of superhard materials with a hardness of 45 GPa measured on single crystals. Up to now, densification of these materials was only possible at high pressure. However, recently it was found that different oxides can be utilized as effective sintering additives. In this work the effect of addition of Y2O3/Al2O3 on the densification behaviour as a function of applied pressure, its microstructure evolution, and resulting mechanical properties were investigated. A strong dependence of the densification with increasing pressure was found. The material revealed characteristic triple junctions filled with amorphous residue composed of B2O3, Al2O3 and Y2O3, while no amorphous grain-boundary films were observed along internal interfaces. Mechanical testing revealed on average hardness of 33 GPa, a fracture toughness of 4 MPam1/2, and a strength value of 500 MPa.

  16. Amplified spontaneous emission measurement of a line-narrowed, tunable, Ti:Al2O3 amplifier using rubidium absorption

    NASA Technical Reports Server (NTRS)

    Barnes, James C.; Barnes, Norman P.; Lockard, George E.; Cross, Patricia L.

    1989-01-01

    Amplified spontaneous emission, ASE, generated by a Ti:Al2O3 laser amplifier has been measured as a function of pump energy, and thus gain, using the atomic absorption of rubidium, Rb, gas at 0.780 micron. By tuning the Ti:Al2O3 laser, the Rb cell could selectively absorb the narrow spectral bandwidth laser radiation while transmitting the wide spectral bandwidth ASE. Transmission of laser amplifier pulses through a Rb absorption cell, measured at various temperatures, thus allows the measurement of the weak ASE in the vicinity of the strong laser pulse. A model for the transmission of Rb as a function of temperature and wavelength has been developed. The measured transmissions are in good agreement with the transmission model predictions.

  17. Some Investigations on Effect of Cooling Rate on Al2O3 Reinforced Al-MMC Prepared by Vacuum Moulding

    NASA Astrophysics Data System (ADS)

    Singh, Rupinder; Sahni, Kanwalpreet

    2016-07-01

    In the present research work effort has been made to study the effect of cooling rate of Al2O3 reinforced; aluminum metal matrix composites (Al-MMC) on hardness of component prepared by vacuum moulding (VM) process. The study started with selection of the component for industrial application. This study also highlights the effect of reinforcement in form of double particle size and triple particle size on hardness of Al-Al2O3 MMC. The input parameters of process are composition of MMC, vacuum moulding silica sand AFS No., vacuum pressure and component volume. The results of study supported by microstructure analysis suggest the geometric model for MMC hardness prepared by VM process.

  18. CO oxidation mechanism on the γ-Al2O3 supported single Pt atom: First principle study

    NASA Astrophysics Data System (ADS)

    Gao, Hongwei

    2016-08-01

    Understanding the role of metal-support interaction for the supported single-atom catalysts is very important in heterogeneous catalysis. Here, Three different CO oxidation mechanisms on Pt/γ-Al2O3 catalyst were probed by periodic density functional theory (DFT) calculations in detail, namely the reactive O*sbnd Osbnd C*dbnd O intermediate mechanism, the reactive CO3 intermediate mechanism and the Pt-Al3+ double sites mechanism. According to the calculated results analysis, we concluded that the dominant reaction pathway at the low temperatures is the reactive O*sbnd Osbnd C*dbnd O intermediate mechanism. Our results are in very good agreement with the experimental evidence for O*sbnd Osbnd C*dbnd O coverage on Pt/γ-Al2O3 at room temperature by an in situ diffuse reflectance infrared detector.

  19. Influence of Al2O3 on the ionic conductivity of plasticized PVC-PEG blend polymer electrolytes

    NASA Astrophysics Data System (ADS)

    Ravindran, D.; Vickraman, P.

    2016-05-01

    Polymer electrolytes with PVC-PEG blend as host matrix and LiClO4 as dopant salt was prepared through conventional solution casting method. To enhance the conductivity propylene carbonate (PC) was used as plasticizer. The influence of ceramic filler Al2O3 on the conductivity of the electrolyte films were studied by varying the (PVC: Al2O3) ratio. The films were subjected to XRD, complex impedance analysis and SEM analysis. The XRD studies reveal a marginal increase in the amorphous phase of the electrolyte films due to the incorporation of filler. The AC impedance analysis shows the dependency of ionic conductivity on the content (wt %) of filler and exhibit a maximum at 4 wt% filler. The SEM analysis depicts the occurrence of phase separation in electrolyte which is attributed to the poor solubility of polymer PVC in the liquid electrolyte.

  20. An investigation of thermal performance improvement of a cylindrical heat pipe using Al2O3 nanofluid

    NASA Astrophysics Data System (ADS)

    Ghanbarpour, M.; Khodabandeh, R.; Vafai, K.

    2016-07-01

    In this study, effect of Al2O3 nanofluid on thermal performance of cylindrical heat pipe is investigated. An analytical model is employed to study the thermal performance of the heat pipe utilizing nanofluid and the predicted results are compared with the experimental results. A substantial change in the heat pipe thermal resistance, effective thermal conductivity and entropy generation of the heat pipe is observed when using Al2O3 nanofluid as a working fluid. It is found that entropy generation in the heat pipe system decreases when using a nanofluid due to the lower thermal resistance of the heat pipe which results in an improved thermal performance. It is shown that the proposed model is in reasonably good agreement with the experimental results and can be used as a fast technique to explore various features of thermal characteristics of the nanofluid based heat pipe.